Sentence:  The isolated disordered regions and the amorphous layer have widely different anneal behavior. In the case of germanium and <WSD>silicon</WSD>, the isolated disordered regions anneal at moderate temperatures of approximately 200° and 300° C, respectively. The amorphous layers also anneal in a characteristic fashion, but at appreciably higher temperatures, i.e., at approximately 600° C in <WSD>silicon</WSD> and 400° C in germanium. 
Meaning of the word marked with <WSD> tags:  (Q670) A nonmetallic element ("symbol" Si) with an atomic number of 14 and atomic weight of 28.0855.