ARCHIVES HISTORIQUES 
DE LA COMMISSION 
 
 
 
COLLECTION RELIEE DES 
DOCUMENTS "COM" 
 
 
 
 
COM (83) 607 
 
 
 
Vol. 1983/0 225 
  
 
Disclaimer  
Conformém ent au règlement (CEE, Euratom) n° 354/83 du Conseil du 1er février 1983 
concernant l'ouverture au public des archives historiques de la Communauté économique 
européenne et de la Communauté européenne de l'énergie atomique (JO L 43 du 15.2.1983, 
p. 1), tel que modifié par le règlement (CE, Euratom) n° 1700/2003 du 22 septembre 2003 
(JO L 243 du 27.9.2003, p. 1), ce dossier est ouvert au public. Le cas échéant, les documents 
classifiés présents dans ce dossier ont été déclassifiés conformément à l'article 5 dudit 
règlem ent. 
In accordance with Council Regulation (EEC, Euratom) No 354/83 of 1 February 1983 
concerning the opening to the public of the historical archives of the European Econom ic 
Communit y and the European Atom ic Energy Communit y (OJ L 43, 15.2.1983, p. 1), as 
amended by Regulation (EC, Euratom) No 1700/2003 of 22 September 2003 (OJ L 243, 
27.9.2003, p. 1), t his file is open to the public. Where necessary, classified documents in this 
file have been declassified in conformity with Article 5 of the aforementioned regulation.  
In Übereinstimmung mit der Verordnung (EWG, Euratom) Nr. 354/83 des Rates vom  1. 
Februa r 1983 über die Freigabe der historischen Archive der Europäischen  
Wirtschaftsgemeinschaft und der Europäischen Atomgem einschaft (ABI. L 43 vom  15.2.1983,  
S. 1), geändert durch die Verordnung (EG, Euratom) Nr. 1700/2003 vom 22. Septem ber 2003  
(ABI. L 243 v om 27.9.2003, S. 1), ist diese Datei der Öffentlichkeit zugänglich. Soweit  
erforderlich, wurden die Verschlusssachen in dieser Datei in Übereinstimmung mit Artikel 5  
der genannten Verordnung freigegeben.  
COMMISSION O F THE EUROPEAN COMMUNITIES
C O M (8 3 ) 6 0 7  final
Brussels, 1 7  O ctober 1 9 8 3
Draft for a
C O U N C I L  R E G U L A T I O N  ( E E C )
temporarily suspending the autonom ous C o m m o n  C u sto m s 
Tariff duties o n  certain industrial products
(submitted to the Council b y  the C o m m issio n )
C O M (8 3 ) 6 0 7  final

- 3  -
E X P L A N A T O R Y  M E M O R A N D U M
1. T he subject of the following draft regulation is the temporary 
suspension of duties in the C o m m o n  Custom s Tariff for a  num ber of 
industrial items, as requested by the M e m b e r States.
It is partly a  prolongation and partly a  n e w  measure.
2. It seem s appropriate to the Com m ission that a  duty suspension is 
justified for the goods listed in the annex to this regulation.
T he Com m ission proposes a  total suspension for those products for 
w hich C om m unity production does not exist: or is minimal.
A  partial suspension is proposed in cases where the C om m unity 
production covers only a  part of the requirements. T he rate 
of the partially suspended duty depends on the extent of the 
possible C om m unity supply to the C om m unity users. T he C om m ission 
is also always looking for the right balance between the interests 
of the suppliers, users and the consumers in the C om m unity.
It also takes into account the need to protect employment.
3. T he proposed measures are confined to six months because of the 
difficulties of estimating the evolution of the basic factors.
4. For a  num ber of items for w hich the M e m b e r States also requested 
duty suspensions the Com m ission does not propose a  tariff measure 
because the necessary conditions are not fulfilled. This concerns 
the following items :

-  4-
C C T
heading M o Description
ex15.10 C Mixture of industrial fatty acids with a  content
of :
- not less than 40 and not m ore than 4 5  %  
weight heptane acid
- not less than 30 and not m ore than 3 5  %  
weight hexane acid
- not less than 8  and not m ore than 10 %  
weight octane acid
- not less than 8  and not m ore than 1 0  %  
weight nonane acid
- not less than 4  and not m ore than 6  %
weight valeric acid
ex29.05 BII 2,2'-(p-Phenylene)dipropan-2-ol
ex29.08 AIII
c)2-Bromo-6-methoxynaphthalene
2 9.10 A 2-(2-Butoxyethoxy)ethyl 6-propylpiperonyl ether
ex29.14 AX I Nonanoic acid
ex29.22 AIII DipropyLamine with a  purity of not less than 
90 %  and not m ore than 97 % by weight
ex29.23 AII IndenoLol hydrochloride (IN N M )
ex29.30 trans-Cyclohex-1,4-ylene diisocyanate
ex29.14 C Allethrin(ISO)
ex29.35 Q Ketazolam(INN)
ex29.35 Q Troc Losene sodiurn(INNM)dihydrate
ex29.39 DII MethyIprednisolone(INN) and its salts and esters
ex29.41 D Ivermectin (IN N )
ex29.44 C Ccftizoxime sodium (INNM)
ex30.01 BII B i le-extract
ex35.04 Aqueous solution of h u m an  0(-2 Interferon with 
a  purity of not less than 95 %  calculated on 
the dry matter, whether or not frozen
ex38.19G Catalysts consistingi of a  mixture of N.,N'-(oxydiethylene)
bis-dimethylamine) and 1,1'-oxydipropan-2-ol. containing
not less than 69 %  and not m ore than 7 1  %  by 
of N,N'-(oxydiethylene)bisCdimethylamine)weight

-  5-
C C T
heading M o Description
e x3 81 9G Catalysts, consisting of copper chloride, 
supported o n  alum inium  oxide, for the 
preparation of dichLoroethane, ethylene, 
hydrochloric acid and oxygen, b y  fixed b ed  
process
e x3 8.1 9 XIvermectin (INN) dissolved in toluene
e x3 8.1 9 X AlkenyIsuccinic anhydride paper sizing agent 
resistant to a lu m
e x3 9.0 2 cI a) Polyethylene in one of the form s m entioned 
in note 3  (b ) to chapter 39, having a  density 
of not less than 0.958 at 2 3  d eg  C  an d  
containing b y  weight, not m o re than :
5 0  p p m  alum inium  
2  p p m  calcium  
2  p p m  c h ro m iu m  
2  p p m  iron 
2  p p m  nickel 
2  p p m  titanium 
8  p p m  vanadium
for the manufacture of chlorosulphonated 
polyethylene
e x3 9.0 2 cVI
a)Copolymer, entirely of maleic anhydride and styrene, whether or not mn»minE  a  
styrene-butadiene block copolymer, in one of the forms mentioned in Note 3  (b) 
to Chapter 39 '
e x3 9.0 2 cXI Biaxially extended polyvinylalcohol film 
of a  thickness of less than 1  m m , coated o n  
both sides w ith a  polyvinylidenechloride 
copolym er
e x3 9.0 2 cXIV
b )Biaxially oriented film of a  copolym er 
of vinyl alcohol w ith ethylene, whether or 
not in rolls
e x3 9.0 3 B  I I I
a)'lifaplasticized cellulose diacetate 'flake'
e x4 8.07 D Paper coated o n  both sides w ith a  w eight of 
at least 4 3  but not m o re than 4 6  g /m 2  for the 
printing of weeklies in the sense of heading
49.02

-  6 -
C  C T
heading N o Description
ex 56.01 A
A ceu liv « !, ■nulucomnftnent *pun fibres with a matrix fribril u n i c u m , com istm e(tf em ulsion polym erir.ed poly(vinyl alcohol) and vinylchloride
ex56.01B Fibres entirely of M o d a l (IS O )
e x59.03 Lam inated bonded fibre fabrics, w ith a  thickness 
of not m o re than 650 micrometers, of polypropylene 
fibres, w ith a  w eight not exceeding 85 g  per sg.m .
e x70.20BYams obtained from continuous spun glass filaments having a diameter of not less  
than 1 2 -5 micrometres and not more than 1 3 -5 micrometres treated with  
resorcinolformaidehyde, of not less than 340 tex and not more than 6S0 tex
e x84.53B M e m o ry  unit consisting of a  series of fixed discs 
an d  magnetic heads with a  m in im u m  capacity of 
202 megabytes, capable of transferring data 
at 2 458 kilobytes per second, contained in a  
housing w h o se exterior dimensions d o  not exceed 
180 x  250 x  400 m m
e x84.55CAssemblies for automatic data processing  
machines, constituting electronic,  
programmable,  read only memories (EPROMS)
UV erasable, with a storage capacity of  
128 k bits, consisting of a multilayer  
substrate,whose exterior dimensions do not  
exceed 17 x 39 mm, on which are mounted:
- 2 electronic, programmable, read only  
memories (EPROMS) UV erasable, in the  
form of monolithic integrated circuits  
each with a storage capacity of 64 K bits  
and quartz window on the upper surface,
- a decoder in the form of a monolithic  
integrated circuit,
- a decoupling capacitor.
The assemblies bear:
- an Identification marking either  
consisting of one of the following  
combinations of figures and letters or  
including one of those combinations
EDH 7816 C-30  
EDH 7816 C-35  
EDH 7816 N--25  
EDH 7816 N-35
or
- other Identification markings relating  
to assemblies complying with the  
abovementioned description.

-7 -
C C T
heading N o Description
ex 84.55 C
Assemblies for automatic data-processing machines  
constituting electronic programmable read-only memories  
(EPROMs), UV-erasable, with a storage capacity of 128 K  
bits and static random access memories of C-MOS  
technology (C-MOS S-RAMs) with a storage capacity of  
128 K  bits consisting of a multilayer substrate whose  
(exterior) dimensions do not exceed 17 x 39 mm, with not  
more than 28 connecting pins, on which are mounted
two electronic, programmable read-only memories  
(EPROMs) UV-erasable in the form of monolithic  
integrated circuits, each with a storage capacity of 6^  
K . bits and a quartz window on the upper surface
two static random access memories of C-MOS  
technology (C-MOS S-RAMs) in the form of monolithic  
integrated circuts each with a storage capacity of 6V  
K  bits
one decoder in the form of a monolithic integrated  
circuit
one decoupling capacitor
two resistances
iThe assemblies bear:
- an identification marking either consisting of or  
including the following combination of figures and  
letters
EDH 91616 CL 30 (20)  
or
other identification markings relating to assemblies  
complying with the above mentioned description

-  $-
C C T
heading N o Description
e x  8 4 . 5 5  C| Assemblies for automatic data processing machines  
constituting an electronic programmable read-only  
memory (EPROM), UV-erasable, with a storage capacity  
of 6 4  K  bits and a static random access memory of C - 
M OS technology (C-MOS S-RAMs) with a storage capacity  
of 32 K  bits, consisting of a multilayer substrate, whose  
(exterior) dimensions do not exceed 1 7  x 3 9  m m ,  w i t h  not 
more than 28 connecting pins on which are mounted
one electronic programmable read only memory  
(EPROM) in the form of a monolithic integrated  
circuit, with a storage capacity of 64 K . bits and with a  
| quartz window on the upper surface
i| - two static random access memories of C-MOS  
j  technology (C-MOS S-RAMs) in the form of monolithic  
i  integrated circuits each with a storage capacity of 16  
j  K  bits
j  - one decoder in the form of a monolithic integrated  
i  circuitj
i  - one decoupling capacitor
1
I  - two resistances1
j  The assemblies bear 1 
an identification marking either consisting of or  
including one of the following combinations of figures  
or figures and letters:
EDH 90804 BS - 30 (20)
EDH 90804 BS - 25 (15)
A PS J l
other identification markings relating to assemblies  
complying with the above mentioned description

-3-
C C T
heading No j  Description
| ^
ex 84.55 C Assemblies for automatic data-processing machines
!  constituting electronic, programmable, read-only  
| memories (EPROMs), UV-erasable, with a storage  
capacity of 256 K  bits, consisting of a multilayer  
substrate, whose (exterior) dimensions do not exceed 17 x  
39 mm, on which are mounted:
four electronic, programmable, read-only memories  
(EPROMs), UV-erasable, in the form of monolithic  
integrated circuits, each with a storage capacity of 64 
K  bits and a quartz window on the upper surface
one decoder in the form of a monolithic integrated  
circuit
- one decoupling capacitor  
The assemblies bear
an identification marking either consisting of or  
including the following combination of figures and  
letters i
EDH 7832 M C  - 35
or
'  - other identification markings relating to assemblies  
complying with the above mentioned description
ex 84.55 C  _  a-  a ,Indicating point (dot) matrix modules, m a x im u m
dimensions 150 x 300 x 400 mm, excluding connections
comprising a layer of liquid crystal between two
sheets or plates either of glass or of plastic with at
least 560 indicating points, mounted on printed circuits
containing electronic components with drive or control
functions, with or without connecting cable
ex 85.01 B  II Pulse transformers, with m ax im u m  dimensions of
400 x  500 x  700 m m , weighting not more than 300 kg, 
for the transforming of voltage from 4  K V  to 60 K V  
at a  frequency of 200 Hi, with a duration of 125 
microseconds

~40-
C  C T
heading N o  Description
ex 85.21 A  III Cathode ray tubes equipped with a  so-called
dotted m ask and with de£fca-connected electron 
guns having a  diagonal angle of deflection not 
exceeding 90 0  and with m ax im u m  colour-dot 
spacing of 0.61 m m , for use in the manufacture 
,  of aeronautic instruments, telecommunications 
i  and electronic mediacontrol instruments,
I  graphic and im age processing displays
ex 85.21 A  III |  Cathode ray tubes equipped with a  so-called 
j  dotted m ask and with, in-line electron guns 
:  having a  diagonal angle of deflection not 
I  exceeding 90 0  and with m ax im u m  colour-dot 
j  spacing of 0.61 m m , for use in the manufacture 
!  of aeronautic instruments, telecommunications 
|  and electronic mediacontrol instruments,
|  graphic and im age processing displays
ex 85.21 D  II i  Programmable, non-erasable, read-only memories 
i  (P R O M s), with a  storage capacity of 4  K  bits,
;  in the form  of a  monolithic integrated circuit, 
contained in a  housing w hose exterior dimensions 
d o  not exceed 1 7  x  39 m m , with not m ore than 
s  2 4  connecting pins, or 28 control areas, and 
:  bearing :
:  ~  an  Identification marking either consisting 
!  of one of the following combinations of
figures or figures and letters of including 
one of those combinations :
i  1 8 S  42 5340 7121
i  1 8 S  46 5341 7122
'  1 8 S A  42 53 S  440 7123
|  1 8 S A  46 53 R A  4 4 1 7124
I  24 S  4 153 R S  4 4 1 7125
i  it
iS A  4 153 S  441 
53487126
27S  1 5 5349 74 S 472
27S  2 5 5350 74 S 473
27S  26 5 351 74 S 474
27S  27 5352 74 S 475
27S  28 5353 74 S 476
27
27
27
27
27S  29 
S  30 
S  3 1  
S  32 
S  3354 S  472 
54 S  473 
54 S  474 
54 S  475 
54 S  47674 S  
74 S  
74 S
7640
7641477
572
573
2 8L  4 2 54 S  4777642
28L  4 5 54 S  5727643
!  2 8 P  42 54 S  5737644
28P  4 5 547407645
28R  4 5 547417647
7648
7649

-41 -
C C T
heading N o Descriptipn
28 S A  4 1 5605 8 2  H S  13728 S  4 2 5625 82 H S  147
28 S A  4 2  
;  28 S  4 56340
6341
63 S  440 
63 R A  4 4 182 S  1 1 5  
82 S  136
28 S  4 6  
28 S A  4682 S  137 
82 S  140
29620 63 R S  4 4 1 8 2  S  1 4 1
29621 63 S  4 4 1 8 2  S  1 4 2
29622 6348 82 S  146
29623 6349 82 S  147
29624 6350
!  29625 6351 93438
29626 6352 93448
29627 6353 93452
I  3604 
!  3624H M  664193453
j  3625 7054
I  385107059
or
- other identification markings relating to P R O M s
complying with the abovementioned description
i
ex 85.21 D  II Electronic, programmable, read-only memories (EPROMs), UV-erasable, with a
storage capacity of 32 K bits, with the exclusio n  of the organization of 4 K . x #
bits, having an access time not exceeding 300 ns, in the form of a monolithic
integrated circuit, contained in a housing whose exterior dimensions do not
exceed 17 x 39 mm, with a quartz window on the upper surface, and bearing:
— an identification marking either consisting of one of the following
combinations of figures and letters or including one of those combinations:
2532 
2 5  A  3 2  
2 5  L  32 
2732 
68732 
6 8 L  732
or
— other identification markings relating to EPROMs complying with the
abovementioned description
ex 85. 2 1  D  II Electronic, programmable, read-only memories (EPROMs), UV-erasable, in the
form of a monolithic ir itegrated circuit, with a  
not exceeding 300 ns,storage capacity of 4 K x  8 bits,
having an access time contained in a housing whose
exterior dimensions do not exceed 17 x  39 mm, with a quartz window on the
upper surface, and bearing:
— an identification marking either consisting of the following combination of
figures or letters or ncluding this combination:
2732 A-3
or
— other identification markings relating to EPROMs complying with the
abovementioned description

- 4  2-
C C T
heading N o !  •  Description
e x  85.21 D  II Electronic, programmable, read-only memories (EPROMs), UV-erasable, with a  
storage capacity of 64 K bits, in the form c f a monolithic integrated circuit,  
j  contained in a housing whose exterior dimensions do not exceed 17 x 39 mm,
| with a quartz window on the upper surface, and bearing:
j  — an identification marking either consisting of one of the following  
j  combinations of figures or figures and letters or including one of those  |  combinations:
2 5 6 4  
j  2 7 6 4  
6 8 L  6 4  
6 8 7 6 4  
6 8 A  7 6 4  
6 8 L  7 6 4  
6 8 7 6 6
or
- other identification m arkings relating to E P R O M s  
com plying w ith the abovem entioned description
e x  85.21 D  II!
Electronic, program m able, read-only m em ories ( E P R O M s )  
UV-erasable, w ith a  storage capacity of 1 6  K  x  8  bits 
in the fo rm  of a  monolithic integrated circuit, 
contained in a  housing w h o se exterior dimensions d o  
not exceed 1 7  x  3 9  m m ,  with a  quartz w in d o w  o n  the 
upper surface, and bearing :
- an  identification m arking either consisting of 
the following combination of figures or 
including this combination :
27 1 2 8
o r
- other identification m arkings relating to E P R O M s  
com plying with the abovem entioned description
e x  85.21 D  IIS
Dynamic, random-access memories (D-RAMs), with a storage capacity of 16  
K x 4 bits, in the form of a monolithic integrated circuit, contained in a housing  
whose exterior dimensions do not exceed 9 x 24 mm, with 18 connecting pins,  
and bearing:
— an identification marking either consisting of one of the following  
combinations of figures and letters or including one of those combinations:
I M S  2 6 2 0  
T M S  4 4 1 6  
M B  81 4 1 6
or
— other identification markings relating to D-RAMs complying with the  
abovementioned description

C C T
heading N o  Description
ex  85.21 D  IIStatic, random-access memories of N-MOS technology (N-MOS S-RAMs), with 
a storage capacity of 2 K x 8  bits, in the form of a monolithic integrated circuit, 
contained in a housing whose exterior dimensions do not exceed 17 x 39 mm, 
with 24 connccting pins or not more than 32 contact areas, and bearing:
an Identification marking cither consisting of one of the following 
combinations of figures or figures and letters or induding one of those 
combinations:
M C M  2 0 1 6  
T M M  2 0 1 6  
2 1 2 8  
3 5 2 8  
T M S  4 0 1 6  
4 8 0 2  
5 8 7 2 5  
8 1 2 8
'
or
— other identification markings relating to N-MOS S-RAMs complying with the 
abovementioned description
e x  85.21 DII
Static, random-access memories of C-MOS technology (C-MOS S-RAMs), with 
a storage capacity of 64 K bits, in the form of a monolithic integrated circuit, 
contained in a housing whose exterior dimensions do not exceed 18 x 39 mm, 
with not more than 28 connecting pins, and bearing:
— an identification marking consisting of the following combination of figures 
and letters or induding one of those combinations:
T C  5 5 6 4  
T C  5 5 6 5  C  
H M  6 2 64 P— 1 5  
M B  8 4 64 
or
— other identification markings relating to C-MOS S-RAMs complying with the 
abovementioned description
e x  8 5  .2  I DII Single-chip microcomputers, in the fo rm  of a  monolithic 
integrated circuit, consisting of an arithmetical unit 
w ith a  capacity of 4  bits plus a  read only m e m o ry  ( R O M )  
w ith a  capacity of not less than 9  K  bits and not m o re 
than 6 5  K  bits and a  random-access m e m o ry  ( R A M )  w ith 
a  capacity of not less than 1 6 0  bits and not m o re  than 
4  K  bits, contained in a  housing w h o se exterior 
dim ensions d o  not exceed 1 9  x  5 8  m m , w ith not m o re  
than 8 0  connectin^pins, an d  bearing :
- a n  identification m arking either consisting of or 
induding o n e of the following combinations of 
figures and letters :

M V
C C T
heading N o Description
CD 3200 to 3299
TM C 0270 to 0279
:  TMC 0500 to 0599
1  TM C 0980 to 0989
TMC 1500 to 1599
*  TMC 1980 to 1999’  { '
| TP'0310 to 032?9
!  TP 0450 to 04599
i  TP 0480 to 04899 ? '
TP 0500 to 05999
HD 38800
HD 38820
HD 44796
HD 44800
HD 44801
HD 44820
HD 44840
HD 44860
or
other Identification markings relating to single-chip
microcomputers complying with the aboven-mentioned
description
ex 85.21 D  IID irect-access m em ory controllers of N -M O S  technology (N -M O S  D M A  control-
ler), in the form  o f a m onolithic integrated circuit, contained in a housing whose
exterior dim ensions do not exceed 23 x 82 mm, with not m ore tTion M
connecting pins, and bearing:
—  an identification m arking either consisting of one of the follow ing
com binations of figures o r figures and letters o r including one of those
com binations:
H D  6844
H D  68 A  4 4
H D  68 B  44
H D  68450-4
H D  68450-6
H D  68450— 8
8237
8257
A M  9517 A
o r ~ ~
—  oth er identification m arkings relaiing to N -M O S  D M A  controllers com plying
w ith the abovem entioned description

C C T
heading N o._ _ _uDe
scription
e x  85.21 D  II !Im age sensor consisting of not less less than 12$ and not m ore than 3 4.S6 
photosensitive areas, o f a m atrix linked to shift registers, am plification circuits and 
control circuits, in the form o f a m onolithic integrated circuit contained in a 
housing whose exterior dim ensions do not exceed 16 x 46 mm, with a glass 
w indow  on the upper surface and w ith not m ore than 24 connecting pins and 
bearing:
i —  one of the follow ing identification m arkings:
iTC 101 
TC 102 
TC 103 
TC 104
or
i—  oth er identification m arkings relating to  linear im age sensors com plying with 
the abovem entioned description
e x  85.21 D  II R andom -access memories of ECI technology (E C I.-R A M s), with a storage 
capacity of 1  K . x 4 bits, in the form  o f a m onolithic integrated circuit, contained 
in a housing whose exterior dim ensions do not exceed 10 x 10 mm, with not 
m ore thart^J^connccting pins, and bearing:
.—  an identification m arking either consisting of the follow ing com bination of 
figures or figures and letters or including one of those com binations:
PB 10474 
100474
o r
• —  o th er identification m arkings relating to E C L -R A M s com plying with the 
abovem entioned description

'Ai·
C C T  
headi n g N o Description
e x  85.21 D II
ex  8 5  .2 1  D IIN-MOS programmable communication interfaces, (N-MOS PCIs), in the form of 
a monolithic integrated circuit, contained in a housing whose exterior dimensions 
do not exceed 17 x 39 mm, with not more than 28 connecting pins, and bearing:
— an identification marking either consisting of the following combination of 
figures and letters or including this combination:
8251 A
or
— other identification markings relating to N-MOS PCIs complying with the 
abovementioned description
1
e x  85.21 D IIElectronic, programmable, read only  
memories (EPROMS) U V  erasable, in the  
form of a monolithic integrated  
circuit consisting of a multilayer  
substrate, whose exterior dimensions  
do not exceed 17 x 39 mm, on which are  
mounted a decoder, a decoupling :  
capacitor and 2 chips each having a  
storage capacity of 64 K bits and with  
a total storage capacity of 128 K bits,  
with 2 quartz windows on the upper  
surface, and bearing:
- an identification marking either  
consisting of one of the following  
combinations of figures and letters
or including one of those combinations
EDH 7816 C-30 - 
EDH 7816 C-35  
EDH 7816 N-25  
EDH 7816 N-35
or
- other identification markings relating  
to EPROMS complying with the above-  
mentioned descriptions
M em o ries in the fo rm  of monlithic integrated circuits
consisting of a  multilayer substrate w h o se exterior 
dimensions d o  not exceed 1 7  x  3 9  m m , o n  w hich are 
m ounted a  decoder, a  decoupling capacitor, 2  resistances 
a n d  tw o  electronic program m able read-only m em ories 
(E P R O M s ), UV-erasable, each having a  storage capacity of 
6 4  K  bits and w ith a  total E P R O M  capacity of 1 2 8  K  bits, 
2  static ra n d o m  access m em ories of C - M O S  technology 
( C - M O S  S -R A M s )  each having a  storage capacity of 6 4  K  
bits and w ith a  total S - R A M  storage capacity of 1 2 8  K  
bits, w ith not m o re than 2 8  connecting pins and with

CCT
heading N o
j  2  quartz w in d o w s o n  the upper surface, and bearing :
■  |  - a n  identification m arking either consisting of or 
i  including the following combination of figures an d  
!  letters :
j  EDH 9 1 6 1 6  C L  3 0  (2 0 )
i  or
!  - other identification m arkings relating to m em ories 
j  com plying w ith the abovem entioned description
jj
e x  85.21 D II j  M em o ries in the fo rm  of monolithic integrated circuits 
!  consisting of a  multilayer substrate w h o se exterior 
i  dimensions d o  not exceed 1 7  x  3 9  m m  o n  w hich are 
m ounted a  decoder, a  decoupling capacitor, 2  
resistances and one electronic program m able read­
only m e m o ry  (E P R O M ) , UV-erasable, having a  storage 
capacity of 6 4  K  bits, 2  static ra n d o m  access 
m em ories of C - M O S  technology ( C - M O S  S - R A M s )  each 
having a  storage capacity of 1 6  K  bits and w ith 
a  total S - R A M  storage capacity of 3 2  K  bits, w ith 
not m o re  than 2 8  connecting pins and with a  quartz 
w in d o w  o n  the upper surface, and bearing :
- a n  identification m arking either consisting of
or including the following combination of figures 
and letters :
EDH 90804 BS-30 (20)
EDH 90804 BS-25 (15) 
or
- other identification m arkings relating to m em ories 
com plying with the abovem entioned description
ex 85.21 D II !  Memories in the form of monolithic integrated circuits 
consisting of a multilayer substrate whose exterior 
dimensions do not exceed 17 x 39 mm on which are 
mounted a decoder, a decoupling capacitor, and four 
electronic programmable read-only memories (EPROMs) 
UV-erasable, each having a storage capacity of 64 K  
bits and with a total EPROM capacity of 256 K  bits, 
and with a quartz window on the upper surface, and 
bearing :
- a n  identification m arking either consisting of
or including the following combination of figures 
an d  letters :
EDH 7832 MC-35 
or
- other identification m arkings relating to m em ories 
com plying with the abovementioned descriptionDescription

- i  2-
CCT
heading N o _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _D escription _ _ _ _ _ _ __ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
ex
 85.21 D  II Static ra n d o m  access m em ories of C - M O S  technology 
( C - M O S  S - R A M )  w ith a  storage capacity of 1 6  K  x  
1  bits, and a  m a x im u m  access tim e of 3 5  nano­
seconds, in the fo rm  of a  monolithic integrated 
circuit, contained in a  housing w h o se exterior 
|  dimensions d o  not exceed 1 6  x  3 3  m m , with not 
m o re  than 2 0  connecting pins and bearing :
;  - a n  identification m arking either consisting 
of or including the following combination of 
figures and letters :
H M  6 2 6 7  H P -3 5  
o r
\  - other identification m arkings relating to C - M O S  
i  S - R A M s  com plying w ith the abovem entioned 
description
j
e x  85.21 D  II '  Static ran d o m  access m em ories of N - M O S  technology 
C M O S  S - R A M s )  w ith a  storage capacity of 2  K  x  
I  8  bits and a  m a x im u m  access time of 4 5  nano- 
|  seconds, in the fo rm  of a  monolithic integrated 
|  circuit, contained in a  housing w h o se exterior 
!  dimensions d o  not exceed 1 6  x  3 3  m m  with not 
I  m o re  than 2 4  connecting pins and bearing :
|  - a n  identification m arking either consisting
of o n e of the following combinations of figures 
or figures and letters or including one of 
those combinations :
T M M  2 0 1 8 H -3 5  
T M M  3 0 1 8 H -4 5
6 5 1 6 1  '
6 5 1 6 2  
or
- other identification m arkings relating to M O S  
S - R A M s  com plying w ith the abovementioned 
description
e x  85.21 D  II Program m able Logic A rray ( P L A )  of T T L  Schottky
technology, containing a  program m able 3 2  product 
term  matrix, a  fixed 6 4  s u m  term  matrix and 
a  program m ing circuit, in the fo rm  of a  monolithic 
integrated circuit contained in a  housing w h o se 
exterior dimensions d o  not exceed 8  m m  x  2 8  m m  
w ith not m o re than 2 0  connecting pins and bearing :
- a n  identification m arking consisting of or 
including the following combination of figures 
and letters :
1 6  L  8  
or
- other identification m arkings relating to 
Program m able Logic Arrays (P L A s ) com plying w ith 
the abovem entioned description

cct !
theading No j  Description j
ex 85.21 D II j  Central Processor Unit of HMOS technology (HMOS
|  CPU) in the form of a monolithic integrated circuit 
j  consisting of a 16 x 16 bit service memory, a 16 x 
|  20 bit service memory, a 32 x 32 bit service 
|  memory, a 8 x 8 bit service memory, a 16 bit 
register, two 20 bit registers, a 8 bit register, 
one 12 bit register, a 5 bit counter and timing 
network, contained in a housing whose exterior 
dimensions do not exceed 25 x 25 mm with not more 
than 68 connecting pins ?nd bearing an identification marking 
consisting of or including the following combination of figures and letters:
- LSI-6 04041855 
or
- other identification markings relating to HMOS 
Central Processor Unit complying with the
!  abovementioned description
ex 85.21 D II
ex 85.21 D IIElectronic, programmable, read-only memories of 
C-MOS technology (C-MOS EPROMs) UV-erasable, with 
a storage capacity of 16 K bits, in the form of 
a monolithic integrated circuit, contained in a 
housing whose exterior dimensions do not exceed 
17 x 39 mm, with a quartz window on the upper 
surface and bearing :
- an identification marking either consisting 
of or including the following combination of 
figures and letters :
27 C 16 
or
- other identification markings relating to C-MOS 
EPROMs complying with this abovementioned 
description
Ele'tronic, programmable, read-only memories of 
C-MOS technology (C-MOS EPROMs) UV-erasable with 
a storage capacity of 32 K bits, in the form of 
a monolithic integrated circuit, contained in a 
housing whose exterior dimensions do not exceed 
17 x 39 mm, with a quartz window on the upper 
surface, and bearing :
- an identification marking either consisting 
of or including the following combination of 
figures and letters :
27 C 32
or
other identification markings relating to 
C-MOS EPROMs complying with the abovementioned 
description

CCT
heading Ne 
e,; 35 „21 D IIDescription
ElectricaLI y, erasable, programmable, read-only 
memories (E^ PROMs), with a storage capacity of 
16 K bits, in the form of a monolithic integrated 
circuit,, contained in a housing whose exterior 
dimensions do not exceed 17 x 39 mm, with not more 
than 28 connecting pins and bearing :
- an identification marking either consisting 0* 
one of the following combinations of figures 
or figures and Letters or including one of 
those combinations :
2815 2816 2817 A HN 48016
or 2
- other identification markings relating to E PROMs 
complying with the abovementioned description
ex 85.23 B
ex 90.13Hyperfrequency coaxial cables with a diameter of not less than 3 mm and not 
more than 12 mm, with a weight of not less than '20 g/m and not more than 
300 g/m
Liquid crystal devices with maximum external 
dimensions of 130 x 170 mm in the form of a layer 
of liquid crystal between two sheets or plates 
either of glass or plastic with at least 14 
connection areas
5. Attention is drawn to the fact that the Council Resolution of 
27,6.1974 simplifying the task of the customs administrations 
(O.J. C 79/80) requires the publication of the attached Regula­
tion at least six weeks before its entry into force.

-M-
Draft for a
COUNCIL REGULATION (EEC)
temporarily suspending the autonomous Common Customs Tariff duty on certain
industrial products
THE COUNCIL OF THE EUROPEAN  
COMMUNITIES,
Having regard to the Treaty establishing the 
European Economic Community, and in particular 
Article 28 thereof,
Having regard to the draft Regulation submitted by 
the Commission,
Whereas production of the products referred to in 
this Regulation is at present inadequate or non­
existent within the Community and producers are 
thus unable to meet the needs of user industries of the 
Community;
Whereas it is in the Community’s interest in certain 
cases to suspend the autonomous Common Customs 
Tariff duties only partially, particularly because of the 
existence of Community production, and in other 
cases to suspend them completely;Whereas, taking account of the difficulties involved in 
accurately assessing the development of the economic 
situation in the sectors concerned in the near future, 
these suspension measures should be taken only 
temporarily, by fixing their period of validity by 
reference to the interests of Community production,
HAS ADOPTED THIS REGULATION:
Article 1
From 1  January to 30 June the autonomous
Common Customs Tariff duties for the products 
listed in the Annex hereto shall be suspended at the 
level indicated in respect of each of them.
Article 2
This Regulation shall enter into force on 1  January 'I
This Regulation shall be binding in its entirety and directly applicable in all Member 
States.
Done at Brussels,
For the Council  
. The President

~-12 -  
ANNEX
C C T
heid.V ig NoDescriptionRate of 
autonomous
duty (% )
■X 13.C3 A  V Extract of dewaxed pyrethrum0
e >  28.4t A  II Disodiim tetraborate pentahydrate 0
ex 29.01 D VIITricyclo |8.2.2,24 .7] hexadeca-l(12),4,6,10,13,15-hexaene 0
rx  29.04 A 111 a) 2-Mcthylpropan-2-ol (/ert-butyl alcohol), with a purity of not less than 90 % but 
not more than 96 °/o by weight0
ex 29.07 A <f,4'-(Perfluoroisopr©pylidene)diphenol0
ex 29.08 B  I 3,3 -Oxydi(propylene glycol)0
ex 29.09 B l,2-Epoxy-4-(epoxy©thyl)cycloheX.ane 0
ex 29.16 D Methyl 5-(2,4-dich!orophenoxy)-2-nitrobenzoate0
ex 29.27Isophthalonttnle 8
ex 29.292,4,6-Trichlorophenylhydrazine 0
ex 29.30 £-Phenylene diisocyanate 0
ex 29.34 C■
Chlorodiphenylphosphine 0
ex 29.35 Q■Isonicotinonitri le 0
ex 29.35 Qfc-Hydroxy-2-phenylpyridazin-3(2/f)-one 0
ex 29.35 Q 1 3,6-Dichloropyridine-2-carboxylic acid 5
ex 29.35 Q  
and ex 30.03 
A  II b)Bucindolol (INN)
:0
ex 29.35 Q
ex 29.35 Q  
and ex 30 ,.0 3  
A  Ii b)Adenosine phosphate (INN) 
Tegafur (INN)4.5
0

-  25-
CCT
heading No DescriptionRate of 
autonomous 
duty (%)
ex 29.35 Q 2-HydroxyeihyJammonium 3,6-dichloropyridine-2-carboxyIate
ex 29.35 Q Tetrahydrofuran. containing not more than 40 mg per litre in total o f tetrahydro-2-methylfuran and tetrahydro-3-methvlfu ra n ror the manufacture of aloha -4-hydroxybutyl-omegd-hydroxypoly(oxytetramethylene) C«05
0
ex 29.35 Q Bis(2-hydroxyethyl) (9,10-dlhydro- 10-oxo-9-oxa-1O X 5- 
phospha-10-phenanthrylm'ethyl)succinate0
29.42 C I Caffeine and its salts 4.1
ex 29.44 CFumagillin dicyclohexylammonium (INN) 0
ex 29.44 C IICeftezolQ. C  TUN j 0
ex 29.44 C (Z)-2- ^ 2-Aminothiazol-4-gl [(2s_,3s_)-2-methyl-4-oxo-  
i  1-suLphoazetidin-3-yLcarbamoyQmethyleneamino-oxyJ- i  
|  2-methylpropionic acid 5
i
ex30.03B
b)n;
t
iPurified collagen dispersed in a phosphate physiological saline solution whether or  
not containing lidocaine (INN)j  5
ex32.01AIV Tanning extracts derived from gambier and myrobolan fruits o
ex32.01AIVTanning extracts of eucalyptusi
!  3.2
i
ex35.07
i1NADH:
Lipoamide oxido^reductase |[ipoamide dehydrogenase )1
!  0
i
ex35.07m-Glycerol-3-phosphate: oxygen 5 -  oxidoreductase 0
ex35.07!Pyruvate:oxygen oscidoreductase 0
ex35.07i
Lipoprotein lipase o
ex35.07 Serrapeptase (INN) 0
ex38.03BAcid activated nionunorilUmite which, when rianmu-d by X  lay [Kiwdn  
diffraction, shows four principal lines corresponding to crystal interplane spacing  
(d values) of 0-44, 0-40, 0 ■ 33 and 0-25 nm the line corresponding to 0-40 nm  
being the most intense, for the manufacture of self-copy paper (a)0
(a) Control of the use for this special purpose shall be carried out pursuant to the relevant Community provisions.

c
hcacc~
ng N  , DescriptionRate of 
autonomou 
duty (% )
?8.0 7  A l  Gum spirits of turpentine 3
j
?  8.0 7  B■
Spirits of sulphate turpentine; crude dipentene1
0
3 1.0 7  C
l
iSpirits of wood turpentine; terp-mic solvents produced by the distillation or otter  
treatment of coniferous woods; sulphite turpentine; pine oil (excluding pine oils  
not rch it. terpineol)1  .7
e >38.19 G Catalysts, n the form of granules or rings, having a diameter of not less than  
| 3 mm and more than 10 mm, consisting of silver supported on aluminium oxide,  
'  the silver content being not less than 10 % and not more than 20 % by weight0
ex38.19 G |Catalysts consisting of ethyltriphenylphosphonium
lacetate, dissolved in methanol
110
ex38.19 Xi
j  Mixture of nitromethane and 1,2-epoxybutane 0
ex38.19 X Butylethylmagnesium dissolved in organic solvents to a concentration of not less 
than 22 ° /o an^  not more than 30%  hy weight0
ex38.19 X Grains, consisting of a mixture of dialuminium trioxide and zirconium dioxide, 
containing by weight not less than 70 % and not more than 78 % dialuminium 
trioxide and not less than 19 % and not more than 26 % zirconium dioxide6.1
ex38.19 X Grains, consisting of a mixture of dialuminium trioxide and zirconium dioxide, 
containing by weight not less than 54 % and not more than 62 % dialuminium 
trioxide and not less than 36 % and not more than 44 % zirconium dioxide6.1
ex38.19 X Magnesium bromide 2-oxoperhydroazepin-l-idc dissolved in eeri/on-caprolactam  
to a concentration of not less than 20 V o  and not more than 25 V o  by weight0
ex38.19 X Reaction products of dibutyl dihydrogendiphosphate and 1,2-epoxypropane for  
use in the production of non-rigid polyurethane (a)0
ex 38.19 X  2,3-BisI^-(perfluoroalleyl)ethylthiq)butane-1,4-diol 0
ex 39.01 C  H  a)
ex 39.02 A
ex 39.02 A
ex 39.02 AReflecting self-adhesive sheeting, made up of more than one layer of polyester, 
metallized, whether or not in rolls
Membrane, consisting of a copolymer of tetrafluoroethylene and trifluoroethylene 
having perfluormated alkoxy side chains ending in carboxylic acid groups in the 
ester form, coated on each side with a metallic inorganic compound, whether or 
not in rolls
Membrane, consisting of a copolymer of tetrafluoroethylene and trifluoroethylene 
having perfluormated alkoxy side chains ending in carboxylic acid or sulpnonic 
acid end groups in the potassium salt form, coated on eacn side with a metallic 
inorganic compound, whether or not in rolls
Membrane, consisting of a copolymer of tetrafluoroethylene and trifluoroethylene 
having perfluormated alkoxy side chains ending in carboxylic acid end groups in 
the ester form, containing a woven poly(tetrafluoroethylene) fibre fabric support 
and coated on each side with a metallic inorganic compound, whether or not in rolls0
0
o
o
(a) Conrrol f l! > : u:e for this special purpose shall be carried out pursuant to the relevant Community provisions.

C C T
heading NoDescriptionRate of
autonom ous
duty (%)
ex 39.02 C I a)
ex 39.02 C I a)
ex 39.02 C I a)
ex 39.02 C I b)
ex 39.02 C II
ex 39.02 C  II
ex 39.02 C  III
ex 39.02 C  IV
ex 39.02 C VI b)
ex 39.02 C  X I
ex 39.02 C XIV a)Polyethylene, in one of the forms mentioned in Note 3 (b) to Chapter 39, having 
a density of not less than 0,954 g/cm 1  and not more than 0,958 g/cm 1 , for the 
manufacture of typewriter ribbon or similar ribbon (a) 0
Synthetic paper pulp, in the form of moist sheets made from unconnected finely 
branched, polyethylene, fibrils, whether or not blended with cellulose fibres in a 
quantity not exceeding 15 % , containing polyvinyl alcohol dissolved in water as 
the moistening agent 0
uncoqnected
Synthetic paper pulp, in the form of moist sheets made fronN finely branched 
fibrils of a mixture of polyethylene and a polyethylene copolymer, whether or not 
blended with cellulose fibres in a quantity not exceeding 15% , containing 
polyvinyl alcohol dissolved in water as the moistening agent 0
Transparent polyethylene film which will split longitudinally when stretched at 
right angles to its length, and having a density of not less than 0,925 and
yielding not less than 7 g/m 2  and not more than 19 g/m 2 , for the manufacture of 
typewriter ribbon or similar ribbon (a) 0
Microporous polytetrafluoroethylene film, not less than 30 cm in width and 
weighing not more than 22.4 g/m 2 , whether or not in rolls 0
t
F o ly -O -ch lo ro triflu o reth y len e) film , whether or 0 
not in ro lls
Poiysulphohaiocthylenes in one of the forms mentioned in Note 3 (a) and (b) to QChapter 39
Synthetic paper pulp, in the form of moist sheets 
m ade from unconnected finely branched polypropylene !
l
fibrils, whether or not blended with cellulose fibres 
in a quantity not exceeding 1 5% , containing poly= i  
vinyl alcohol dissolved in water as the moistening 
agent !  0
Plates, made of a copolymer consisting of maleic anhydride and styrene, also 
containing styrene-block copolymer, covered on both sides with a sneet of the 
abovementioned copolymer, modified with butadiene or pigmented 0
!
|Fi L m s  with a thickness of 1  m m  or Less, consisting 
only of one or m ore Layers of polyvinyi alcohol 0
uncornected
Synthcdc paper pi p, in the form of moist sheets made fronVfinely branched 
hbnls ot poKpropylene modified by an organic acid, whether or not blended with 
cellulose tibies in a quantity not exceeding 15%, containing polyvinyi alcohol 
dissolved in water as the moistening agent g
(a) Control of the use for this special purpose shall be carried out pursuant to the relevant Community provisions.

CCT
iiea iing Jo
ex 39.02 
C  XI/ v)Description
PHiineriJation products of acrylic tcid with »mall quantities of a polyunsaturated 
t  £  nom"  faruie  as a thickener in textile pigment priming pastes or in the manu- n
taacre 01 products tailing within heading No 30.03 > a) URate of
artonomous
iluty (%)
ex 39.02 
C X.f .V a)
ex 39.02 
C  X IV  a)
ex 39.02 
C  X IV  a)
ex 39.02 C  
C  X IV  a) 
and e x  39.05 3
ex 39.02 
C  X IV  b)
ex 39.07 B V d)
ex 44.28 C
ex 48.07 C
ex 4 8.07 D
ex 49.11 iT erpoL ym e*' of ethylene, methyl acrylete and a m o n o m e . 
containinj a  non-terminal carboxy group as a  sub= 
stituent,whether or not com pounded with silica
I
Copolymer o f a potyforyalkylene) ester o f a poly carboxylic acid and eptUon-  
caproiactam i
Copolymer of vinyl alcohol with ethylene, in one of the ;  q 
forms mentioned in Note 3 b) to Chapter 39
Chlorinated rubber in powder form with a  chlorine 0  
content of not less than 6 3 %  and not m ore than 6 9 %  
by weight and with a  viscosity average molecular 
weight of not less than 200,000 0
Copolymer of ethylene with propylene in the form of self-  
adhesive strip of a width of not less than 18 mm and not  
more than 27 mm and of a thickness not exceeding 1  mm
whether or not in rolls ' n
Reflecting sheeting or tape, consisting of a facing strip of polyvinyl chloride 
embossed in a regular pyramidal pattern, heat sealed, in parallel lines or a grid 
pattern to a backing strip of plastic material, or of knitted or woven fabric 
covered on one side with plastic material, whether or not in rolls 0
Match splints, manufactured from aspen (Populus tremuloides), for the manufac­
ture of matches not requiring a specific striking surface (so called ‘strike-any- 
where’  matches)(a) q
Bleached paper, impregnated with acrylic resin and coated with poly(vinylidene 
chloride), having a thickness of not less than 200 micrometres and not more than 
255 micrometres and of a weight per square metre of not less than 165 g and not 
more than 180 g 0
Coloured paper, impregnated with acrylic resin and coated with poly(vinylidene 
chloride), having a thickness of not less than 200 micrometres and not more than 
255 micrometres and of a weight per square metre of not less than 165 g and not 
more than 180 g q
J  Artists’ screen prints (commonly described as serigraphs), signed by the artist and 
| numbered from 1  to 200 012.5
5
(a) Contrc. of die use for this special purpose shall be carried out pursuant to the relevant Community provisions.

- n -
CCT
heading No DescriptionRate of 
autonomous 
duty (%)
ex 51.01 A Yarn of synthetic textile fibres, exclusively of aromatic polyamides obtained by the 
polycondensation of m-phenylenediamine and isophthalic acid 0
ex 51.01 A Polyamide yarn, not textured, untwisted or with not more than 22 turns per 
metre, of crimpable bicomponent filaments consisting of poly(hexamethylene adi- 
pamide) and a copolyamide for the manufacture of knee-length stockings, falling 
within subheading 60.03 B 1; women’s stockings, falling within subheading 60.03 
B  1 1  a) or panty hose (tights) falling within subheading 60.04 B III a) 1  (a) 0
ex 54.03 B  I a) Unbleached linen yarn (excluding yarn of flax tow), measuring per kilogram 
30 000 m or less, for the manufacture of multiple or cabled yarns ror the footwear 
industry or for whipping cables (a) 1.8
ex 56.01 A Textile fibres containing not less than 85 % by weight of fibres of aromatic 
polyamides obtained by the polycondensation of m-phenylenediamine and 
isophthalic acid and not less than 1  % and not more than 15 % by weight of 
fibres of poIy(p-phenyleneterephthalamide) 6
ex 59.08Woven poly(tetrafluoroethylene) fibre fabric, coated on one side with a 
copolymer of tetrafluoroethylene and trifluoroethylene, having perfluorinated 
alkoxy side chains ending in carboxylic acid or sulphonic acid groups in the 
potassium salt form0
62.03 A 1Sacks and bags, of a kind used for the packing of goods, used, of jute or of other 
textile bast fibres of heading No 57.030
62.03 B I a) Sacks and bags, of a kind used for the packing of goods, used, of flax or of sisal
10
ex 70.20 A Mats, of non-textile glass fibres, of a weight per square metre of not more than 
100 g and a fibre diameter of not more than seven micrometres 0
ex 70.20 B Yarns, spun from continuous glass filaments, having a diameter of not less than 
5,8 micrometres and not more than 6,4 micrometres, of 33 or 34 tex or a multiple 
thereof and containing not more than 0,8 % by weight of dressing 6,3
ex 74.05 B‘
Non-rigid sheets and plates of polytetrafluoroethylene, with aluminium oxide or 
titanium dioxide as a filler or reinforced with glass-fibre fabric, laminated on both 
sides with copper foill
0
ex 81.04 K l Waste and scrap titanium 0
ex 81.04 K ' Titanium sponge 0
ex 84.17 F  IIImmersion tube (coils) bund-^a consi sting of an 
assembly of plastic tubes terminating at each end in 
a  honeycom b structure (end fitting) surrounded by 
a  pipe connector0
I
(a) Control of the use for this special purpose shall be carried out pursuant to the relevant Community provisii

-Is -
CCT
heading NoDescriptionRate of 
autonomous 
duty (%)
ex 84.18 C II b)Components of separators for the separation of gases from gas mixtures, 
consisting of a bundle of permeable hollow fibres passing through a block of 
pla/tic material at one e n i and sealed at the other e m f -  the whole being 
enclosed within a metal container, whether or not perforated of an overall length 
of not less than 300 mm and not more than 3 700 mm and a diameter of not more
than 350 mm '0
ex 84.18 C II b)Parts of equipment for the filtration and purification of liquids, consisting of a 
bundle of hollow fibres of artificial p l a s t i c  material with permeable walls, 
embedded in a block of artificial plastic material at one end and passing through a 
block of artificial plastic material at the other end, the whole being enclosed in an 
artificial plastic container0
ex 84.31 ASuction roll shells, not drilled being alloy steel tubes with a length of not less 
than 5 207 mm and an outside diameter of not less than 754 mm tor use in 
machinery for making paper or paperboard (a)0
ex 84.34 B Ground and polished magnesium sheets, not yet 
sensitised, w hose dimensions to not exceed 770 x  
1020 m m , coated on one side with epoxy resin insensi­
tive to light 0
ex 84.51 A Typewriters with Braille characters 0
ex 84.51 A Electronic pocket communicators for handicapped persons which, by means of 
push buttons and printing thermic head, print and issue text on tape 0
ex 84.55 C Opto-electric encoder for electronic typewriters consisting of electronic circuits, a 
light-emitting diode (LED), a rotating disc with radial openings, a fixed mask and 
a single chip photovoltaic cell, contained in two plastic shells forming a housing 
of a size not exceeding 60 x 48 x 16 mm 0
ex 84.55 C Winchester or thin film technology magnetic heads 
for disc file peripherals, capable of recording to 
a density of not less than 10 tracks per m m 0
ex 84.55 CAssemblies for automatic data-processing machines, consisting of two stacked 
substrate layers each with two static random-access memories of N-M OS 
technology (N-M OS S-RAMs), in the form of monolithic integrated circuits each 
with a storage capacity of 2 K bits and with a total storage capacity of either 
8 K x 1  bit or 4 K x 2 bits, contained in a housing whose exterior dimensions 
do not exceed 13x13  mm, with 23 connecting pins, and bearing:
—  an identification marking either consisting of one of the following 
combination of figures or including one of those combinations:
(a) Control of the use for this special purpose shall be carried out pursuant to the relevant Community provisions.

CCT
heading NoDescriptionRate of
autonomous
duty (%)
ex 84.55 C  
(cont'ed)
ex 84.55 C
ex 84.55 C4598601
5121850
5121934
5121935 
5122148
5123059
5123120
5123128
5123129
5123337
5123339
or
other identification markings relating to assemblies complying with the 
abovementioned description 0
Assemblies for automatic data-processmg machines, consisting ^  two «a 
substrate layers each with two random access memories of N-M OS technology, 
other than dynamic (N-M OS R A M S  other than d y n a m ic )  
in the form of monolithic
integrated circuits each with a storage capacity ot 4 K . hits and with a total storage 
capacity of either 16 K x 1  bit or 8 K x  2 bits, contained in a housing whose 
exterior dimensions do not exceed 13 x 13 mm, with 24 connecting pins, and 
bearing: ,
— an identification marking either consisting of one of the following 
combinations of figures or including one of those combinations:
4599766
4599767
4599768
45997694599770
4599771
4599772
45997734599774
4599893
—  other identification markings relating to assemblies complying with the
abovementioned description u
Dot matrix displays, whose external dimensions do not _  exceed 
14 x 37 x 169 mm excluding cables and connectors, consisting ol a iaver ot 
liquid crystals between two sheets or plates with 2 560 d o t s  (arranged m 16 .
lines and 160 columns), mounted on a printed-circuit board comprising electronic 
components providing drive and control functions, with
or without 10 or 20-core cable with connector

-3 0.
c c t
heading NoDescriptionRate of
autonomous
duty (%)
ex 84.55 CAssemblies for automatic data processing  
machines, constituting static random access  
memories of C-MOS technology (C-MOS S-RAMS)  
with a storage capacity of 64 K bits  
consisting of a multilayer substrate, whose  
exterior dimensions do not exceed 17 x  
39 mm, on which are mounted:
- 4 static random access memories of C-MOS  
technology (C-MOS S-RAMS) in the form of  
monolithic integraged circuits each with  
a storage capacity of 16 K bits,
- a decoder in the form of a monolithic  
integrated circuit
- a decoupling capacitor.
The assemblies have not more than 28
connecting pins and bear:
- an identification marking either  
consisting of one of the following  
combinations of figures and letters or  
including one of those combinations
EDH8808B-20
EDH8808C-10
EDH8808C-12
EDH8808C-15
EDH8808C-20
EDH8808CL-15
EDH8808CL-20
or
- other identification markings relating  
to assemblies complying with the  
abovementioned description.o

- 3 1  -
C C T
heading N oDescriptionRate of
autonomous 
duty (% )
ex 84.55 C Assemblies for automatic data processing  
machines, constituting static random  
access memories of C-MOS technology  
(C-MOS S-RAMS) with a storage capacity  
of 256 K bits consisting of a multi­
layer substrate, whose exterior  
dimensions do not exceed 17 x 39 mm,  
on which are mounted:
- 4 static random access memories of  
C-MOS technology (C-MOS S-RAMS) in  
the form of monolithic integrated  
circuits each with a capacity of  
64 K bits,
- a decoder in the form of a  
monolithic integrated circuit,
- a decoupling capacitor.
The assemblies have not more than  
28 connecting pins and bear:
- an identification marking either  
consisting of or including the  
following combination of figures and  
letters:
EDH 8832 MC-20
or
- other identification markings relating
to assemblies complying with the o
abovementioned description

-ò%  -
C C T
heading N oDescriptionRate of
autonomous
duty (% )
ex 84.55 C  Magnetic bubble memories with a storage capacity of 1
megabit contained in a housing whose exterior dimensions  
do not exceed 43x44 mm, with not more than 26 connec­
ting pins and bearing: or including^
- an identification marking either consisting oij/one of the  
following combinations of figures or figures ana letters
7110M BM  2011  
BDL 0133  
BDL 0134  
FBM 54DB  
or
- other identification'markings relating to magnetic
bubble memories complying with the above-mentioned  
description 0
ex 84.55 C  Assemblies for automatic data processing machines,
consisting of two stacked, individually housed dynamic  
random access memories of N-MOS technology (N-MOS  
D-RAMs) in the form of monolithic integrated circuits,  
each with a storage capacity of 16 K  x 1  bit and with a  
total storage capacity of 32 K  bits, whose overall exterior  
dimensions do not exceed 10 x 25 mm, with not more than  
18 connecting pins
The housings bear:
- an identification marking consisting of or including one  
of the following combinations of figures:
4429913  
8279251  
8493255  
8493296
or
- other identification markings relating to assemblies
complying with the above mentioned description k  0

C C T
heading N O- 3 3 -
DescriptionRate of
autonomous
duty (% )
ex 84.55 C  Assemblies for automatic data processing machines,
consisting of two stacked, (individually housed) dynamic  
random access memories of N-MOS technology (N-MOS  
D-RAMs) in the form of monolithic integrated circuits,  
each with a storage capacity of 64 K  x 1  bit and with a  
total storage capacity of 128 K  bits, whose overall  
exterior dimensions do not exceed 10 x 25 mm, with not  
more than 18 connecting pins
The housings bear:
- an identification marking consisting of or including one  
of the following combinations of figures:
4481832  
8493287
or
- other identification markings relating to assemblies
complying with the above mentioned description o
ex 84.55 C  Assemblies for autom atic data-processing machines,
constituting electronic programmable read-only memories 
EPROMs, UV-erasable, with a storage capacity of 256 K  
bits consisting of a multilayer substrate, whose exterior  
dimensions do not exceed 17 x 39 mm, on which are  
mounted:
- 2 electronic programmable read only memories  
(EPROMs), UV-erasable, in the form of monolithic 
integrated circuits each with a storage capacity of 64  
K  bits and a quartz window on the upper surface
a decoder in the form of a monolithic integrated  
circuit
-  cl. decoupling c a p a c ito r
- two resistances  
The assemblies bear
- an identification marking either consisting of or
including the following combination of figures and  
letters \
EDH 7832 MM-30 0
o r  j
- other identification markings relating to assemblies j
complying with the above mentioned description Ì  q

C C T
heading N o-  3 * i -
DescriptionRate of
autonomous
duty (% )
ex 84.55 C Assemblies for automatic data processing machines 
constituting static random access memories of C-MOS  
technology (C-MOS S-RAMs) with a storage capacity of  
32 K  bits consisting of a multilayer substrate whose  
exterior dimensions do not exceed 17 x 39 mm, with not  
more than 28 connecting pins, on which are mounted
2 static random access memories of C-MOS  
technology (C-MOS S-RAMSs) in the form of  
monolithic integrated circuits each with a storage  
capacity of 16 K  bits
- a decoder in the form of a monolithic integrated  
circuit
- a-decoupling capacitor  
The assemblies bear:
an identification marking either consisting of or  
including one of the following combinations of figures  
and letters  
EDH 8804 C -20
EDH 8804 CL-20 1
o r
other identification markings relating to assemblies  
complying with the above mentioned description 0
ex 84.55 C  Assemblies for automatic data processing machines
constituting dunamic random access memories (D-RAMs)  
with a storage capacity of 128 K  bits consisting of a  
multilayer substrate whose exterior dimensions do not  
exceed 9 x 57 mm, with not more them 22 connecting pins,  
on which are mounted
- 2 dynamic random access memories: (D-RAMs) in the  
form of monolithic integrated circuits, each with a  
storage capacity of 64 K  bits
The assemblies bear
- an identification marking either consisting of or  
including one of the following combinations of figures
and letters:
EDH 4128 - 15  
EDH 4128 - 2C  
EDH 4264 - 15  
EDH 4264 - 20
or
other identification markings relating to assem blies
complying with the above mentioned description q

-35 -
CCT
heading No
ex 84.59 B
ex 85.03
ex 85.19 A
ex 85.21 A V
ex 85.21 A V
ex 85.21 D IIDescription
Integrally forged, rough-turned components, with unit weights of more than 150 Q
tonnes, for reactor pressure vessels |
Dry zinc/carbon batteries of a voltage of not less than 5,5 and not more than 6,5, 
and of a size not exceeding 110 x 90 x 5 mm, for incorporation in film cassettes 
for instant pictures (a) 0
Thermal relays contained in a hermetically sealed glass cartridge not exceeding 
35 mm in length excluding wires, with a maximum leakage rate of 10-6 cm1  
H e/sec at 1  bar in the temperature range 0 to 160 °C, to be incorporated into 
compressors for refrigerating equipment (a) 0
Colour cathode-ray tubes, using shadow mask, in-line technology in which 
images are displayed on a screen with a usable surface not exceeding 165 x 165 
mm for use in electronic flight instrument, warning and systems displays (a) 0
Digital displays in the form of a tube consisting of a glass housing mounted on a 
board whose dimensions do not exceed 350 x 300 mm excluding leads. The tube 
contains one or more rows of characters or lines arranged in rows, each character 
or line consisting of fluorescent or phosphorescent elements. These elements are 
mounted on a metallized base which is covered with fluorescent substances or 
phosphorescent salts which give off light when bombarded with electrons 0
Static random-access memories of N-M OS technology (N-M OS S-RAMs), in the 
form of a monolithic integrated circuit consisting of two stacked substrate layers, 
each with two chips, each having a storage capacity of 2 K bits and with a total 
storage capacity of 8 K x 1  bit or 4 K x 2 bits, contained in a housing whose 
exterior dimensions do not exceed 13 x 13 mm, with 23 connecting pins, and 
bearing:
an identification marking either consisting of one of the following 
combinations of figures or including one of those combinations:
4598601Rate of
autonomous
duty (%)
5121850
5121934
5121935 
5122148
5123059
5123120
5123128
5123129
5123337
5123339
or
— other identification markings relating to N-M OS S-RAMs complying with the
abovementioned descriptions 0
(a) Control of the use for this special purpose shall be carried out pursuant to the relevant Community provisions.

-5fc
CCT
hc.dinp No
ex 85.21 r'· π
ex 85.21 D II
ex 85.21 D II£■<■ .cription
‘Quasi-static’ random-access memories of N-M OS technology (N-M OS quasi­
static RAMs), in the form of a monolithic integrated circuit consisting of two 
stacked substrate layers, each with two chips, each having a storage capacity of 
4 K bits and with a total storage capacity of 16 K x 1  bit or 8 K x 2 bits, 
contained in a housing whose exterior dimensions do not exceed 13 x 13 mm, 
with 24 connecting pins, and bearing:
— an identification marking either consisting of one of the following 
combinations of figures or including one of those combinations:
4599766
4599767
4599768
45997694599770
4599771
4599772
45997734599774
4599893
or
— other identification markings relating to N-M OS quasi-static RAMs
complying with the abovementioned description 0
Digital displays of a size not exceeding 25 X  35 mm, consisting of a printed cir­
cuit board on which are mounted, under a plastic cover, up to 22
light-emitting diodes manufactured from gallium-based semi-conductor 
compounds. Each display consists of a single character with or without a plus or 
minus sign and/or one or two dots 0
Digital displays, consisting of a printed circuit board of a size not exceeding 
35 x 90 mm with a single line of characters, not less than three in number, 
comprising light-emitting diodes made from gallium-based semi-conductor 
compounds mounted thereon. Each character is composed of up to eight segments
0
with or without a decimal point
and the line of characters has a protective cover of transparent plasticRate of 
autonomous 
duty (%)
ex 85.21 D II
ex 85.21 D IIRead-only memories (ROMs), in the form of a monolithic integrated circuit, with 
a storage capacity of 16 K . x 8 bits, with read-register and output control, 
contained in a housing whose exterior dimensions do not exceed 50 x 16 mm, 
with not more than 40 connecting pins, and bearing:
—  an identification marking either consisting of one of the following 
combinations of figures or including one of those combinations:
from 62 000 to 62 999
other identification markings relating to ROMs complying with the 
abovementioned description 8,5
Programmable, non-erasable, read-only memories (PROMs) of Schottky TTL 
technology, with a storage capacity of 1  K bit, in the form of a monolithic 
integrated circuit, contained in a housing whose exterior dimensions do not 
exceed 9 x 23 mm, with 16 connecting pins, and bearing:
—  an identification . marking either consisting of one of the following 
combinations of figures on figures and letters or including one of those 
combinations:
14 S 10 
24 S 10 
24 SA 10 
247 A 10

C C T Rate of 
autonomous heading N o Description
duty (% )
ex 85.21 D II 
(c o n t’d )27 S 20 
27 S 21
29760
29761 
38510
5300
5301
53 S 140
53 S 141
54 S 287 
54 S 387 
54700 
5603 
5623
6300
6301
63 S 140 
63 S 141 
7052 
7057 
74 S 287 
74 S 387
7610
7611
82 S 126 
82 S 129
8520
8521 
93417 
93427
or
— other identification markings relating to PROMs complying with the
abovementioned description 11,5
ex 85.21 D II Programmable, non-erasable, read-only memories (PROMs) of Schottky TTL 
technology, with a storage capacity of 2 K bits, in the form of a monolithic 
integrated circuit, contained in a housing whose exterior dimensions do not 
exceed 17 x 39 mm, with not more than 24 connecting pins, and bearing:
— an identification marking either consisting of one of the following 
combinations of figures or figures and letters or including one of those 
combinations:
27 S 12
27 S 13
28 L 22 
28 LA 22 
29613
29770
29771 
38510
5305
5306
5308
5309
53 S 240
53 S 241
54 S 570 
54 S 571 
5604 
5624
6305
6306
6308
6309

-3$..
CCT
heading No
ex 85.21 D li 
(c o n t’d )At S 'M'·' 
b i S 241
6335
6336 
7053 
7058
74 S 570 
74 S 571 
76 LS 03
7620
7621
82 S 114 
82 S 130 
82 S 131 
93436 
93446DescrimionRate of 
autonomous 
duty (%)
or
— other identification markings relating to PROMs complying with the 
abovcmentioned description 11,5
ex 85.21 D 1 1 Programmable, non-erasable, read-only memories (PROMs) with a storage 
capacity of 8 K bits, in the form of a monolithic integrated circuit, contained in a 
housing whose exterior dimensions do not exceed 17 x 39 mm, with not more 
than 24 connecting pins or 28 contact areas, and bearing:
— an identification marking either consisting of one of the following 
combinations of figures or figures and letters or including one of those 
combinations:
24 S 81 6380 82707
24 SA 81 6381 82708
24 S 86 6388 82 HS 185
6389 82 LS 180
63 S 840 82 LS 181
27 S 180 * 63 S 841 82 S 180
27 S 181 82 S 181
27 S 185 82 S 182
27 S 35 7050 82 S 183
7055 82 S 184
7060 82 S 185
28 L 85 82 S 2708
28 L 86
28 P 85 7127
28 R 35 7128 87 S 180
28 R 85 7129 87 S 181
28 S 2708 7130 87 S 184
28 S 85 7131 · 87 S 185
28 S 86 7132 87 S 186
28 SA 86 87 S 187
29623 74 LS 478
29630 74 S 2708
29631 74 S 454 93450
29632 74 S 455 93451
29633 74 S 478 93460
29634 74 S 479 93461
29635 93465
29636 93466
29637 7608 93 L 450
29650 7680 93 L 451
29651 7681
29652 7684
29653 7685 9460
7686
7687
3628 7688
7689

- $5' -
CCT
heading NoDescriptionRate of 
autonomous 
duty (%)
ex 85.21 D II 5380
(co n t'd ) 5381 77 S 180
5388 77 S 181
5389 77 S 184
53 S 840 77 S 185
53 S 841 77 S 186
77 S 187
54 LS 478
54 S 2708 TBPS 8 1 M
54 S 454
54 S 455
54 S 478
54 S 479
or
relating to PROMs complying with the — other identification markings
abovementioned description 1  0
ex 85.21 D II
ex 85.21 D II
ex 85.21 D IIProgrammable, non-erasable, read-only memories (PROMs), with a storage 
capacity of 32 K bits, in the form of a monolithic integrated circuit, contained in 
a housing whose exterior dimensions do not exceed 17 x 3? mm, with not more 
than 24 connecting pins, op contact aroas/ and bearing;
— an identification marking either consisting of one of the 
combinations of figures or figures and letters or including one 
combinations:
TMS 25 P 32 
2732 C 
TMS 27 P 32
— other identification markings relating to PROMs complying 
abovementioned descriptionfollowing 
of those
with the
0
Programmable, non-erasable, read-only memories (PROMs), with a storage 
capacity of 64 K bits, in the form of a monolithic integrated circuit, contained in 
a housing whose exterior dimensions do not exceed 17 x 39 mm, with not more 
than 28 connecting pins, or 28 contact areas/ and bearing!
— an identification marking either consisting of one of the following 
combinations of figures or figures and letters or including one of those 
combinations:
TMS 25 P 64 
2764 C 
TMS 27 P 64
T M S  2564 
T M S  2574 
T M S  3564 
T M S  3764 
M B  7144N L
N L
N L
N L
or
—  other identification marking relating to PROMs complying with the
abovementioned description 0
Electronic, programmable, read-only memories (EPROMs), UV-erasable, with a 
storage capacity of 2 K bits, in the form of a monolithic integrated circuit, 
contained in a housing whose exterior dimensions do not exceed 17 x 39 mm, 
with a quartz window on the upper surface, and bearing:
— an identification marking either consisting of one of the following 
combinations of figures or figures and letters or including one of those 
combinations:
B 1702 A 
AMI 702 ADC 
82140 PP
— other identification markings relating to EPROM s complying with the
abovementioned description _

CCS-
heading No DescriptionRate of 
autonomous 
duty (%)
ex 85.2t D II
ex 85.21 D  II 
(co n t'd )
ex 85.21 D II
ex 85.21 D IIDynamic, random-access memories of N-M OS technology (N-M OS D-RAMs), 
with a storage capacity of 256 K bits, in the form of a monolithic integrated 
circuit, contained in a housing whose exterior dimensions do not exceed 
17 x 34 mm, with not more than 20 connecting pins, OP Contact a r e a s ,  an d
bearing:
— an identification marking either consisting of one of the following 
combinations of figures or figures and letters or including one of those 
combinations:
41245
UPD 41256 D
TM M  41257 
MCM 4256 S 
TM M  4256 AP 
TM M  4256 P 
M CM 4257 S 
H M  50257 
M CM  6256
81256
81257
82256
-°ither identification markings relating to N-MOS D-RAMs complying with 
the abovementioned description 7  5 Q
Static, random-access memories of N-M OS technology (N-M OS S-RAMs) with 
a storage capacity of 256 x 4 bits, in the form of a monolithic integrated circuit, 
contained in a housing whose extenor dimensions do not exceed 17 x 39 mm 
with not more than 24 connecting pins, and bearing: ’
— an identification marking either consisting of one of the following 
combinations· °* f‘8UreS "  f‘gUreS ^  letters' or ‘»eluding one of thos°
M 120 8101
8111
2101
21 H  01 9101
2102 91 L01
2111 9111
21 H  11 91 L 11
2112 9112
21 H  12 91 L 12
or
other identification markings relating to N-MOS S-RAMs complying with the 
abovementioned descriptions rib
Static, random-access memories of N-M OS technology (N-M OS S-RAMs) with 
a storage capacity of 8 K bits, in the form of a monolithic integrated circuit, 
contained in a housing whose exterior dimensions do not exceed 17 x 39 mm 
with not more than 24 connecting pins, and bearing: ’
— an identification marking either consisting of one of the following 
combinations· °* ‘‘8UreS ° r flgurcs and ,etters or including one of those
4008 
4118 
PD 421 
4801
or8104
8108
8112
8114
8185
other identification markings relating to N-MOS S-RAMs complying with the abovementioned description rib  c

CCT
heading NoDescriptionRaie of 
autonomous 
duty (%)
ex 85.21 D II
ex 85.21 D II
ex 85.21 D IIStatic, random-access memories H-M OS technology (H-M OS S-RAMs), with a 
storage capacity of 1  K x 4 bits and access time not exceeding 70 ns, in the form 
of a monolithic integrated circuit, contained in a housing whose exterior 
dimensions do not exceed 8 x 23 mm, with not more than 18 connecting pins, 
and bearing:
— an identification marking either consisting of one of the following 
combinations of figures and letters or including one of those combinations:
NEC U DP 2149 
SY 2149 H 
AM 2149 
TMS 2149
or
— other identification markings relating to H-M OS S-RAMs complying with the
abovementioned description 8,5
Static, random-access memories of complementary MOS technology (C-MOS 
S-RAMs), with a storage capacity of 4 K x 1  bit, a maximum access time not 
exceeding 70 ns and a standby mode supply current of less than 1  mA, in the form 
of a monolithic integrated circuit, contained in a housing whose dimensions do 
not exceed 9 x 26 mm, with 18 connecting pins, and bearing:
— an identification marking either consisting of the following combination of 
figures or including this combination:
6147
—  other identification markings relating to C-M OS S-RAMs complying with the
abovementioned description . 4
Static, random-access memories of TTL technology (TTL S-RAMs), with a 
storage capacity of 1  K bit, in the form of a monolithic integrated circuit, 
contained in a housing whose exterior dimensions do not exceed 16 x 30 mm, 
with not more than 22 connecting pins, and bearing:
- — an identification marking either consisting of one of the following 
combinations of figures or figures and letters or including one of those 
combinations:
2205 93412
2510 93 L 412
2511 93415
74 LS 214 93 L 415
74 LS 215 93422
74 LS 314 93 L 422
74 LS 315 93425
74 S 207 93 F 425
74 S 208 93 L 425
74 S 214
74 S 314
or
— other identification markings relating to TTL S-RAMs complying with the
abovementioned description 0

C C l . . .
heading NoDescriptionRate of 
autonomous 
duty (%)
ex 85.21 D II
ex 85.21 D II
ex 85.21 D II
ex 85.21 D IIP-M OS 12/24-hour clock circuits, incorporating an elapsed time facility, in the 
lonn of a monolithic integrated circuit, contained in a housing whose exterior 
dimensions do not exceed 53 x 14 mm, with 40 connecting pins, for the manu­
facture of instrument panel clocks and clocks of a similar type for motor vehicles 
(a), and bearing:
— an identification marking either consisting of the following combination of 
figures and letters or including this combination:
MM 53124
or
—  other identification markings relating to clock circuits complying with the
abovementioned description 0
C-MOS clock circuits, in the form of a monolithic integrated circuit, contained in 
a housing whose exterior dimensions dot not exceed 16 x 54 mm, with not more 
than 42 connecting pins, for the production of automatic time-switches, instru­
ment panel clocks and clocks of a similar type for motor vehicles (a)
The case bears:
—  an identification marking either consisting of one of the following 
combinations of figures and letters or including one of these combinations:
H I 2060 
H I 2065 
T  3605
or
— other identification markings relating to clock circuits complying with the
abovementioned description 0
C-MOS clock circuits, operating from a single 1,55 V power supply, with a liquid 
crystal display (LCD) driver, in the form of a monolithic integrated circuit, 
contained in a housing whose exterior dimensions do not exceed 15 x 21 mm, 
with not more than 56 connecting pins, and bearing:
— an identification marking either consisting of the following combination of 
figures and letters or including this combination:
TC 8219 AF
or
— other identification markings relating to C-M OS clock circuits complying with
the abovementioned description 0
N-M OS programmable interval timers (N-M OS PITs), in the form of a 
monolithic integrated circuit, contained in a housing whose exterior dimensions 
do not exceed 17 x 39 mm, with not more than 24 connecting pins, and bearing:
— an identification marking either consisting of the following combination of 
figures or including this combination:
8253
— other identification markings relating to N-M OS PITs complying with the
abovementioned description 11,5
(a) Control of the use foi ir this special purpose shall be carried out pursuant to the relevant Community provisions.

CCT
heading NoDescriptionRate of 
autonomous 
duty (%)
ex 85.21 D II
ex 85.21 D II
ex 85.21 D II
ex 85.21 D IIMonolithic integrated circuits, consisting of eight independent elements capable of 
controlling the eight segments and/or characters of fluorescent or gas discharge 
displays, contained in a housing whose exterior dimensions do not exeed 
7 x 23 mm, with 18 connecting pins, and bearing:
— an identification marking either consisting of one of the following 
combinations of figures or including one of those combinations:
513
514 
534 
594 
6118 
6128 
6138
or
— other identification markings relating to circuits complying with the
abovementioned description 0
Programmable, non-erasable, logic circuits (field programmable logic array) of 
TTL Schottky technology, with not more than 48 AND functions, not more than 
eight O R  functions and not more than 16 inputs, in the form of a monolithic 
integrated circuit, contained in a housing whose exterior dimensions do not 
exceed 17 x 39 mm, with not more than 28 connecting pins, and bearing:
— an identification marking consisting of one of the following combinations of 
figures or figures and letters or including one of those combinations:
82 S 100 
82 S 101
93458
93459EP 54 AS 839 
FP 54 AS 840 
SN 54 LS 333 
SN 54 LS 334 
SN 54 LS 335 
SN 54 LS 336FP 74 AS 839 
FP 74 AS 840 
SN 74 LS 333 
SN 74 LS 334 
SN 74 LS 335 
SN 74 LS 336
or
— other identification markings relating to programmable logic arrays complying
with the abovementioned description 5
Arithmetic-logic units of H-M OS technology, in the form of a monolithic 
integrated circuit, consisting of one 32 bit register, one 24 bit register, one 4 bit 
register, twelve 1  bit registers, two 16 x 24 bit service memories, one logic 
network performing arithmetic and logic operations, decodifying logic, an error 
detection and management logic, one 8 hit counter, and a timing network, 
contained in a housing whose exterior dimensions do not exceed 23 x 82 mm, 
with 64 connecting pins, and bearing:
— the identification marking ALU 0486
.o r
■ — other identification markings relating to arithmetic-logic units complying with
the abovementioned description 0
Sequence control circuits of H -M O S technology, in the form of a monolithic 
integrated circuit, consisting of one 32 bit register, three 16 bit registers, one 
16 x 16 bit service memory, one 7x17  bit last in first out (LIFO) memory, one 
adder circuit, decodifying logic, priority logic, error detection and management 
logic, one 16 bit multiplexer, one 8 bit counter and a timing nework, contained in 
a housing whose exterior dimensions do not exceed 23 x 82 mm, with 
64 connecting pins, and bearing:

CCT
heading NoDescriptionRate of 
autonomous 
duty (%)
ex 85.21 D II 
(c o n t’d )— the identification marking CSS 0484 
or
— other identification markings relating to sequence control circuits complying 
with the abovementioned description ' 0
ex85.21 D II Logic control circuits of H-M OS technology, in the form of a monolithic 
integrated circuit, consisting of one 7 bit register, three timers, one multiplexer, 
sequential and combining networks intended to perform control operations, 
decodifying logic, error detection and management logic and a timing network, 
contained in a housing whose exterior dimensions do not exceed 23 x 82 mm, 
with 64 connecting pins, and bearing:
—  the identification marking MIC 0482 
or
—  other identification markings relating to logic control circuits complying with 
the abovementioned description 0
ex85.21 D II Amplifiers, in the form of a monolithic integrated analogue circuit, contained in a 
housing whose dimensions do not exceed 1,65 x 3.56 x 3.56 mm, with not more 
than 10 connecting pins, for use in products falling within subheading 90.19 B I 
(a), and bearing:
—  an identification marking either consisting of one of the following 
combinations of figures and letters or including one of those combinations:
V 35 
C 05
or
— other identification markings relating to amplifiers complying with the 
abovementioned description 0
ex 85.21 D II Enhanced programmable communications interface (EPCI), in the form of a 
monolithic integrated circuit, contained in a housing whose external dimensions 
do not exceed 16 x 38 mm, with not more than 28 connecting pins, and bearing:
(a) Control of the use for this special purpose shall be carried out pursuant to the relevant Community provisions.

-%.
CCI'
heading NoDescriptionRate of 
autonomous 
duty (%)
ex 85.21 D II — an identification marking either consistin 1 of the following combination of
(co n t'd ) figures or including that combination:
2661
or
— other identification markings relating to EPCIs complying with the above
description 0
ex 85.21 D  II Electronic control circuits of N - M O S  technology 
in the form of a monolithic integrated circuit 
for the control of D -R A M s, capable of multiplexing 
addresses and of generating timing, contained in 
a  housing whose exterior dimensions do not exceed 
2 5  x  53 m m , with not more than 68 connecting pins 
or contact areas, and bearing :
- an identification marking either consisting of 
the following combination of figures or figures 
and letters :
T M S  4500 
8203 
8207 
or
- other identification markings relating to
electronic control circuits complying with the 
abovementioned description «
ex 85.21 D II Interface logic circuits (FSLs) between floppy disc control (FDC) and the control 
circuit (driver), with data recovery and precompensation logic functions of 
N-M OS technology, in the form of a monolithic integrated circuit, contained in a 
housing whose exterior dimensions do not exceed 8,5 x 26,5 mm, with not more 
than 20 connecting pins, and bearing:
ex 85.21 D IIan identification marking either consisting of the following combination of 
figures and letters or including this combination:
W D 1691
or
— other identification markings relating to interface logic circuits (FSLs)
complying with the abovementioned description 0
Contention resolving local area network (LAN) controllers, in the form of a 
monolithic integrated circuit, contained in a housing whose exterior dimensions 
do not exceed 51x16  mm, with not more than 48 connecting pins, and bearing:
— an identification marking either consisting of the following combination of 
figures or figures and letters or including one of those combinations:
AM 7990 
82586
or
— other identification markings relating to contention resolving local area
network controllers complying with the abovementioned description 0

CCT
heading NoDescriptionRate of
autonomous
duty (%)
ex 85.21 D II Serial interfaces, capable of implementing the data stream encoding, decoding and 
associated control functions for a local area network, in the form of a monolithic 
integrated circuit, contained in a housing whose exterior dimensions do not 
exceed 16 x 33 mm, with not more than 24 connecting pins, and bearing:
— an identification marking either consisting of the following combination of 
figures or figures and letters or one of those combinations:
AM 7991 
82501
or
—  other identification markings relating to serial interface devices complying
with the abovementioned description 0
ex 85.21 D IIField programmable array logics (PALs) of bipolar technology, fo rm o fa
monolithic integrated circuit, with fusible links, a programmable AND array 
fixed OR arrayf not more than 20 inputs and not more than 10 outputs, whether 
or not with registers, contained in a housing whose exterior dimensions do not 
exceed 17 x 39 mm, with not more than 28 connecting pins, and bearing.
—  an identification marking either consisting of the following combination of 
figures and letters or including one of those combinations:
10 H  8 16 L 8 18 L 4
12 H 6 16 R 8 20 L 2
14 FI 4 16 R 6 20 C 1
16 H  2 16 R 4 20 L 10
16 C 1 1 6 X 4 20 X 10
10 L 8 16 A 4 2 0 X 8
12 L 6 12 L 10 2 0 X 4
14 L 4 14 L 8
16 L2 16 L6
relating to PALs complying with the
Semi-custom logic arrays (Gate arrays) of C-MOS technology, in the form of a 
monolithic integrated circuit, with not less than 8 000 2-input NAND functions, 
contained in a nousing whose exterior dimensions do not exceed 39 x 39 mm, 
with not less than 179 connecting pins, and bearing:
—  an identification marking either consisting of the following combination of 
figures and letters or including this combination:
MB 66000 VHor
— other identification markings 
abovementioned description
or
—  other identification markings relating to C-MOS logic arrays complying with
the abovementioned description ®
ex 85.21 D IIMonolithic integrated circuits, consisting of a static random-access memory 
(S-RAM), with a storage capacity of 256 bits superimposed bit-for-bit on a repro­
grammable electrically erasable read-only memory (EJ-PROM ), contained in a 
housing whose exterior dimensions do not exceed 8 x 23 mm, with 18 connecting 
pins, and bearing:
— the identification marking X  2210 
or
— other identification markings relating to S-RAMs superimposed on
E!-PROM s complying with the abovementioned description *1ex 85.21 D II

C C T
heading N o
DescriptionRate of
autonomous
duty (% )
ex 85.21 D II Static random access memories of C-MOS technology  
(C-MOS S-RAMS) in the form of a  
monolithic integrated circuit consisting  
of a multilayer substrate, whose  
exterior dimensions do not exceed  
17 x 39 mm, on which are mounted a  
decoder, a decoupling capacitor and  
4 chips each having a storage capacity  
of 16 K bits and with a total storage  
capacity of 64 K bits, with not more  
than 28 connecting pins, and bearing:
- an identification marking either  
consisting of one of the following  
combinations of figures and letters  
or including one of those combinations
EDH 8808 B-20  
EDH 8808 C-10  
EDH 8808 C-12  
EDH 8808 C-15  
EDH 8808 C-20  
EDH 8808 CL-15  
EDH 8808 CL-20
or
- other identification markings relating  
to C-M05 S-RAMS complying with the
abovementioned description. n
ex 85.21 D II Static random access memories of
C-MOS technology (C-MOS S-RAMS) in the  
form of a monolithic integrated circuit  
consisting of a multilayer substrate,  
whose exterior dimensions do not exceed  
17 x 39 mm, on which are mounted a  
decoder, a decoupling capacitor and  
4 chips each having a storage capacity  
of 64 K bits and with a total storage  
capacity of 256 K bits, with not more  
than 28 connecting pins, and bearing:
- an identification marking either  
consisting of or including the  
following combination of figures  
and letters:
EDH 8832 MC-20
or
- other identification markings relating  
to C-MOS S-RAMS complying with the  
abovementioned description g

-  V 3 -
C C T
heading N o DescriptionRate of
autonomous
duty (% )
ex 85.21 D  II
ex 85.21 D  II
ex 85.21 D  IID ynam ic random  access memories of N - M O S  
technology (N -M O S  D -R A M s), with a total 
storage capacity of 32 Kbits in the form 
of monolithic integrated circuits, contained 
in two housings, stacked one on the other, 
each having a  storage capacity of 16 K  x  1  bit, 
w hose exterior dimensions do not exceed 
10 x  2 5  m m , with not m ore than 18 connecting 
pins and bearing:
- an identification marking consisting of or including one 
of the following com binations of figures:
4429913 
8279251 
8493255 
8493296
or
- other identification markings relating to N - M O S  D - R A M S  
complying with the above mentioned description
D ynam ic random  access memories of N - M O S  
technology (N -M O S  D -R A M S ) with a  total 
storage capacity of 128 K  bits in the form 
of monolithic integrated circuits, contained 
in two housings, stacked one on the other 
each having a  storage capacity of 64 K  x  1  bit, 
whose exterior dimensions do not exceed 
10 x  2 5  m m  with not m ore than 18 connecting 
pins and bearing:
- an identification marking consisting of or including one 
of the following combinations of figures:
4481832
8493287
or
- other identification markings relating to N - M O S  D - R A M S
complying with the above mentioned description 0
Electronic, programmable, read only memories 
(E P R O M s) U V  erasable, in the form of monolithic 
integrated circuits, consisting of multilayer 
substrate, whose exterior dimensions do not 
exceed 1 7  x  36 m m  on which are mounted a decoder, 
a decoupling capacitor, 2  resistances and 2  E P R O M S  
each having a storage capacity of 128 K  bits and 
with a total storage capacity of 256 with 2  quartz 
w indow s on the upper surface, and bearing:

C C T
heading N o
ex85.21 D  II 
(cont'd)
ex 85.21 D  II
ex 85.21 D  IIDescriptionRate of
autonomous 
duty < % )
an identification marking either consisting of or 
including the following combination of figures and 
letters
EDH 7832 MM-30 *
or
- other identification markings relating to E P R O M s
complying with the above mentioned description 0
Static random access memories of C-MOS technology  
(C-MOS S-RAMS) in the form of a  
monolithic integrated circuit consisting  
of a multilayer substrate, whose  
exterior dimensions do not exceed  
17 x 39 mm, on which are mounted a  
decoder, a decoupling capacitor and  
2.  chips each having a storage capacity  
of 16 K bits and with a total storage  
capacity of 3Jt K bits, with not more  
than 28 connecting pins, and bearing:
- an identification marking either  
consisting of one of the following  
combinations of figures and letters  
or including one of those combinations
E D H  8804 C  - 20 
E D H  8804 C L  -20
or
- other identification markings relating  
to C-MOS S-RAMS complying with the
abovementioned description. 0
D ynam ic random  access memories (D -R A M s) with a total 
storage capacity of 128 K  bits, in the form  of a  
nonolithic integrated circuit, contained in tw o 
lousings, stacked one on the other, each having a  
storage capacity of 64 K  bits, w hose exterior dimen­
sions do not exceed 9  x  57 m m , with not m ore than 
12 connecting pins, and bearing:
- an identification marking either consisting of or
including one of the following combinations of figures
and letters:
EDH 4128 - 15  
EDH4128-2C  
EDH 4264 - 15  
EDH 4264 - 20
or
other identification markings relating to D-RAMs
complying with the above mentioned description 0

-  5o -
C C T
headi ng 
N oDescriptionRate of
autonomous
djjty (% )
ex
85.21 
D  II
ex
85.21 
D  II
ex
85.21 
D  IIRoad only memory of C-MOS technology C-MOS ROM)  
with a storage capacity of 16K x 8 bits and a maximum dissipation power  
of 200 milliwatts active and 0.15 milliwatts standby in the forn of p  
ronolithic integrated circuit contained in a housing v.hose exterior  
dimensions do not exceed 17 x 33 mm with net more than 20 connecting  
pins and bearing:-
an identification marking either consisting 0? r t Ä Ä
combination of
IP! 6.13128 Pfigures and letters;ng
o r
- other identification markings relating to C-MOS ROMs complying with  
the above-mentioned description. 0
Error detection and correction circuit of #-M0S  
technology capable of detecting and correcting single bit errors and  
detecting all double bit errors in the fora of a monolithic integrated  
circuit contained in a housing whose exterior dimensions do not exceed  
25 x 25 mm, with not more than 68 contact areas and bearing:-
- an identification marking consisting of or including the following  
combination of figures
8206
or
- other identification markings relating to N-MOS error detection and  
correction circuits complying with the above-mentioned description. 0
Q uad bus transceivers of advanced L o w  power Schottky technology,
in the form of a monolithic integrated  
circuit contained in a housing whose exterior dimensions do not exceed  
9 x 28 mm with not more than 20 connecting pins and bearing:-
- an identification marking consisting of or including the following  
combination of figures
A M  290?
or
- other identification markings relating to quad bus transceivers
complying with the above-mentioned description» Q

- S i  -
C C T
heading N o DescriptionRate of
autonomous
duty (% )
ex 85.21 D  II
ex 85.21 D  II
ex 85.21 D  II
ex 85.21 D  IIBurst Error Processor (B E P ) of H M O S  technology 
^detecting and correcting multiple errors 
derived from a line of magnetic discs in the 
form of a  monolithic integrated circuit con­
tained in a housing w hose exterior dimensions 
do not exceed 16 m m  x  5 4  m m  with not m ore than 
40 connecting pins and bearing an identification 
marking consisting of or including the following 
combination of figures or figures a n d  letters:
Z8065 / A M  9520/A M  9 5 2 1
or
- any other identification markings relating 
to H M O S  Burst Error Processor complying
with the above mentioned description 0
Graphic display controller (G D C ) with the 
capacity for controlling a 256 K  w ord 16 bit 
m em ory, in the form of a monolithic integrated 
circuit, contained in a  housing whose exterior 
dimensions do not exceed 1 5  x  5 2  m m , with not 
m ore than 40 connecting pins, and bearing:
- an identification marking consisting of or 
including the following combination of 
figures and letters
P D  7220
or
- other identification markings relating to 
G D C s  complying with the above mentioned 
description 0
H ard disc controllers of N - M O S  technology 
(N -M O S  H D C s) in the form of a  monolithic 
integrated circuit contained in a housing 
w hose exterior dimensions do not exceed 
1 5  x  5 3  m m , with not m ore than 40 connecting 
pins and bearing
- an identification marking consiting of or 
including one of the following combinations 
of figures or figures and letters
W D  1010 
P D  7261
or
- other identification markings relating to
N - M O S  H D C s  complying with the above mentioned i  
description 0
Fourphase clock generator of N - M O S  technology 
with programmable pulse amplitude and phasing 
capable of connecting distortions in writing 
signals for recording on floppy discs in the 
form of a  monolithic integrated circuit, 
contained in a  housing w hose exterior dimensions 
do not exceed 24 x  7  m m ,with not m ore than 18

C C T
heading N o DescriptionR a te of
a u to n o m o u s
duty ( % )
ex 85.21 D  II 
(cont' ed)
ex 85.21 D  I]
ex 85.21 D  II
ex 85.21 D  IIconnecting pins and bearing
- an identification marking consisting of or 
including the following combination of 
figures and Letters
W D  2143 - 03
or
- other identification m arkings relating to 
N - M O S  clock generators com plying w ith the
above mentioned description 0
Multi-protocol communication controller of 
M O S  technology (M O S -M P C C ) for the transmission 
and receiving of data specialised in the syn­
chronous mode, in the form of a  monolithic 
integrated circuit contained in a  housing 
w hose exterior dimensions do not exceed 
16 m m  x  54 m m  with not m ore than 40 connecting 
pins and bearing:
- an identification marking either consisting 
of or including the following combination 
of figures:
2652/68652 8273, 8274, 16456
or
- other identification markings relating to
multiprotocol communication controllers 
(M O S -M P C C ) complying with the above- 
mentioned description 0
Error correction and detection unit (E C D U ) 
of bipolar technology, compatable with E E L  
and T T L  logic, in the form of a monolithic 
integrated circuit, contained in a  housing 
whose exterior dimensions do not exceed 
16 m m  x  62 m m  with not m ore than 48 connecting 
pins and bearing:
- an identification marking consiting of or 
including the following combination of 
figures or figures and Letters:
2960, 74 F  630, 74 F  631, D P  8400
or
- other identification markings relating to
Error correction and detection units 
(E C D U s) complying with the abovementioned 
description 0
Logic circuit of H - M O S  technology (N -M O S  L C ) 
serving as a clock generator for central 
process unit, main m em ory and input/output 
interfaces, in the form of a  monolithic

- 5 3  -
C C T
heading N o DescriptionRate of
autonomous
duty (% )
ex 85.21 D  
(cont'ed)II
integrated circuit contained in a housing 
w hose exterior dimensions do not exceed 
25 m m  x  25 m m  with not m ore than 68 connecting 
pins and bearing:
- an identification marking consisting of or 
or including the following combination of 
figures and letters:
H  108982 (M C C )
or
- other identification markings relating to H - M O S
logic circuits (H -M O S  L C s) complying with the 
abovementioned description 0
ex 85.21 D  II !  Electronic, programmable, read-only m em ories (E P R O M s ) 
UV-erasable with a  storage capacity of 256 K  bits, 
in the form  of a  monolithic integrated circuit, contained 
in a  housing w hose exterior dimensions do not exceed 
1 7  x  39 m m , with a  quartz w indow , and bearing :  
j  - an identification marking either consisting of or including the 
j  following combination of figures and letters:
D  27256 
!  or
I  - other identification markings relating to E P R O M s  
i  complying with the abovementioned description 0
ex 85.21 D  II Electrically erasable, programmable, read-only memories  
using E2 technology (E2 PROMs), with a storage capacity  
of 256 bits, in the form of a monolithic integrated  
circuit, contained in a housing whose exterior dimensions  
do not exceed 10 x 12 mm, with 8 connecting pins and  
bearing:
- an identification marking either consisting of or  
including the following combination of figures and letters:
NMC 9306
or
- other identification markings relating to E2 PROMs  
complying with the above-mentioned description 0

CCT
heading NoDescriptionRate of 
autonomous 
duty (°/o)
ex85.22 C II Electromagnetic displays, consisting of seven electromagnetic coils which by 
means of the residual magnetism in the stators provide indefinite memory, seven 
pivoting light-reflecting segments each of which is attached to a bar magnet. The 
display is contained in a housing whose exterior dimensions do not exceed 
28 x 36 x 50 mm 0
exi85.22 C II Portable machines for reading and writing Braille with tactile read-out and 
magnetic tape cassette recording systems, microphone and speaker, equipped with 
a standard electro-mechanical Braille typewriter keyboard and an electro­
mechanical Braille read-out unit with 20 characters, all contained in a case whose 
exterior dimensions do not exceed 24 x 36 x 11 cm 0
ex90.02 Image reversers made up from an assembly of optical fibres 0
ex 90.13 Liquid crystal devices,' consisting oi a layer of liquid  
crystals between two glass sheets or plates, with a  
minimum of 7 and a maximum of 32 figures or letters,  
contained in a housing whose exterior dimensions do not  
exceed 4Ox 154 mm, with not more than 192 contact  
areas, and bearing:
- an identification marking either consisting of one of the  
following combinations of figures or including one of  
those combinations:  
from 1000000-0001 to 9999999-9999
or
- other identification markings relating to liquid crystal  
devices complying with the above-mentioned description 0
ex 90.19 A IIIVascular prostheses of which the largest opening has an internal diameter not 
exceeding 8 mm0
ex 90.19 A III H eart valves0
ex 90.19 A  III Vascular prostheses incorporating a  tubular carrier 
m ad e of yarns enclosed in animal collagen 0
ex 90.19 B  IReceivers for hearing aids, contained in  
a housing whose external dimensions  
excluding connecting points do not  
exceed 3.2 X  4.5 x 6.5 m m0
ex 90.19 B II Reading appliances for the blind, in which a miniature c a m e r a  using photo 
transistors transmits letters onto a scanning board with piezo-electric penei s, an 
their parts and accessories0
ex 98.04 A II Non-fibrous plastic pen-tips with an internal channel0