No Description Related item from Annex I to Regulation (EC) No 428/2009

IX.A3.001 Electronic items, as follows: (a) General-purpose integrated circuits, as follows: Notes: 1. The status of wafers (finished or unfinished), in which the function has been determined, is to be evaluated against the parameters of 3A001.a. 2. Integrated circuits include the following types: — “Monolithic integrated circuits”; — “Hybrid integrated circuits”; — “Multichip integrated circuits”; — “Film-type integrated circuits”, including silicon-on-sapphire integrated circuits; — “Optical integrated circuits”; — “Three-dimensional integrated circuits”; — “Monolithic Microwave Integrated Circuits” (“MMICs”). 3A001.a

IX.A3.002 Integrated circuits designed or rated as radiation hardened to withstand any of the following: (a) A total dose of 5 × 103 Gy (Si) or higher; (b) A dose rate upset of 5 × 106 Gy (Si)/s or higher; or (c) A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1 013 n/cm2 or higher on silicon, or its equivalent for other materials; Note: The category above does not apply to Metal Insulator Semiconductors (MIS). 3A001.a.

IX.A3.003 “Microprocessor microcircuits”, “microcomputer microcircuits”, microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, integrated circuits that contain analogue-to-digital converters and store or process the digitized data, digital-to-analogue converters, electro-optical or “optical integrated circuits” designed for “signal processing”, field programmable logic devices, custom integrated circuits for which either the function is unknown or the status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, Electrical Erasable Programmable Read-Only Memories (EEPROMs), flash memories, Static Random-Access Memories (SRAMs) or Magnetic Random-Access Memories (MRAMs), having any of the following: (a) Rated for operation at an ambient temperature above 398 K (+ 125 °C); (b) Rated for operation at an ambient temperature below 218 K (– 55 °C); or (c) Rated for operation over the entire ambient temperature range from 218 K (– 55 °C) to 398 K (+ 125 °C); Note: This category does not apply to integrated circuits for civil automobile or railway train applications. 3A001.a.2

IX.A3.004 Electro-optical and “optical integrated circuits”, designed for “signal processing” and having all of the following: (a) One or more than one internal “laser” diode; (b) One or more than one internal light detecting element; and (c) Optical waveguides; 3A001.a.

IX.A3.005 4. Field programmable logic devices having any of the following: (a) A maximum number of single-ended digital input/outputs of greater than 700; or (b) An “aggregate one-way peak serial transceiver data rate” of 500 Gb/s or greater; Note: This category includes — Simple Programmable Logic Devices (SPLDs); — Complex Programmable Logic Devices (CPLDs); — Field Programmable Gate Arrays (FPGAs); — Field Programmable Logic Arrays (FPLAs); — Field Programmable Interconnects (FPICs). 3A001.a.

IX.A3.006 Neural network integrated circuits; 3A001.a.

IX.A3.007 Custom integrated circuits for which the function is unknown, or the status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: (a) More than 1 500 terminals; (b) A typical “basic gate propagation delay time” of less than 0,02 ns; or (c) An operating frequency exceeding 3 GHz; 3A001.a.

IX.A3.008 Direct Digital Synthesizer (DDS) integrated circuits having any of the following: (a) A Digital-to-Analogue Converter (DAC) clock frequency of 3,5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or (b) A DAC clock frequency of 1,25 GHz or more and a DAC resolution of 12 bit or more; Technical note: The DAC clock frequency may be specified as the master clock frequency or the input clock frequency. 3A001.a.

IX.A3.009 Microwave or millimetre wave items, as follows: (a) Travelling-wave “vacuum electronic devices”, pulsed or continuous wave; 1. Devices operating at frequencies exceeding 31,8 GHz; 2. Devices having a cathode heater with a turn-on time to rated RF power of less than 3 seconds; 3. Coupled cavity devices, or derivatives thereof, with a “fractional bandwidth” of more than 7 % or a peak power exceeding 2,5 kW; 4. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following: a. An “instantaneous bandwidth” of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5; b. An “instantaneous bandwidth” of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; c. Being “space-qualified”; or d. Having a gridded electron gun; 5. Devices with a “fractional bandwidth” of greater than or equal to 10 %, with any of the following: a. An annular electron beam; b. A non-axisymmetric electron beam; or c. Multiple electron beams; (b) Crossed-field amplifier “vacuum electronic devices” with a gain of more than 17 dB; (c) Thermionic cathodes designed for “vacuum electronic devices” producing an emission current density at rated operating conditions exceeding 5 A/cm2 or a pulsed (non-continuous) current density at rated operating conditions exceeding 10 A/cm2; (d) “Vacuum electronic devices” with the capability to operate in a “dual mode”; Technical note: “Dual mode” means that the “vacuum electronic device” beam current can be intentionally changed between continuous-wave and pulsed mode operation by use of a grid and produces a peak pulse output power greater than the continuous-wave output power. 3A001.b.

IX.A3.010 “Monolithic Microwave Integrated Circuit” (“MMIC”) amplifiers that are any of the following: (a) Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a “fractional bandwidth” of greater than 15 %, and having any of the following: 1. A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz; 2. A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz; 3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or 4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz; (b) Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a “fractional bandwidth” of greater than 10 %, and having any of the following: 1. A peak saturated power output greater than 10W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or 2. A peak saturated power output greater than 5W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz; (c) Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a “fractional bandwidth” of greater than 10 %; (d) Rated for operation with a peak saturated power output greater than 0,1n W (– 70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; (e) Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a “fractional bandwidth” of greater than 10 %; (f) Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a “fractional bandwidth” of greater than 10 %; (g) Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a “fractional bandwidth” of greater than 5 %; or (h) Rated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 90 GHz; Notes: 1. The status of the MMIC whose rated operating frequency includes frequencies listed in more than one frequency range is determined by the lowest peak saturated power output threshold. 2. This category does not apply to MMICs if they are specially designed for other applications, e.g., telecommunications, radar, automobiles. 3A001.b.

IX.A3.011 Discrete microwave transistors that are any of the following: a. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz and having any of the following: 1. A peak saturated power output greater than 400 W (56 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz; 2. A peak saturated power output greater than 205 W (53,12 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz; 3. A peak saturated power output greater than 115 W (50,61 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or 4. A peak saturated power output greater than 60 W (47,78 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz; b. Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz and having any of the following: 1. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; 2. A peak saturated power output greater than 15 W (41,76 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz; 3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or 4. A peak saturated power output greater than 7 W (38,45 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz; c. Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; d. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz; or e. Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 43,5 GHz; Notes: 1. The status of a transistor whose rated operating frequency includes frequencies listed in more than one frequency range is determined by the lowest peak saturated power output threshold. 2. This category includes bare dice, dice mounted on carriers or dice mounted in packages. Some discrete transistors may also be referred to as power amplifiers. 3A001.b.

IX.A3.012 Microwave solid-state amplifiers and microwave assemblies/modules containing microwave solid-state amplifiers that are any of the following: (a) Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a “fractional bandwidth” of greater than 15 % and having any of the following: 1. A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz; 2. A peak saturated power output greater than 270 W (54,3 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz; 3. A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or 4. A peak saturated power output greater than 90 W (49,54 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz; (b) Rated for operation at frequencies greater than 6,8 GHz up to and including 31,8 GHz with a “fractional bandwidth” of greater than 10 % and having any of the following: 1. A peak saturated power output greater than 70 W (48,54 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; 2. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz; 3. A peak saturated power output greater than 30 W (44,77 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or 4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz; (c) Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; (d) Rated for operation with a peak saturated power output greater than 2 W (33 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a “fractional bandwidth” of greater than 10 %; (e) Rated for operation at frequencies exceeding 43,5 GHz and having any of the following: 1. A peak saturated power output greater than 0,2 W (23 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a “fractional bandwidth” of greater than 10 %; 2. A peak saturated power output greater than 20 mW (13 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a “fractional bandwidth” of greater than 5 %; or 3. A peak saturated power output greater than 0,1 nW (- 70 dBm) at any frequency exceeding 90 GHz; Note: The status of an item whose rated operating frequency includes frequencies listed in more than one frequency range is determined by the lowest peak saturated power output threshold. 3A001.b.

IX.A3.013 Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fmax/fmin) in less than 10 μs and having any of the following: (a) A band-pass bandwidth of more than 0,5 % of centre frequency; or (b) A band-stop bandwidth of less than 0,5 % of centre frequency; 3A001.b.

IX.A3.014 Converters and harmonic mixers that are any of the following: (a) Designed to extend the frequency range of “signal analysers” beyond 90 GHz; (b) Designed to extend the operating range of signal generators as follows: 1. Beyond 90 GHz; 2. To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; (c) Designed to extend the operating range of network analysers as follows: 1. Beyond 110 GHz; 2. To an output power greater than 31,62 mW (15 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 3. To an output power greater than 1 mW (0 dBm) anywhere within the frequency range exceeding 90 GHz but not exceeding 110 GHz; or (d) Designed to extend the frequency range of microwave test receivers beyond 110 GHz; 3A001.b.

IX.A3.015 Microwave power amplifiers containing “vacuum electronic devices” specified above and having all of the following: (a) Operating frequencies above 3 GHz; (b) An average output power to mass ratio exceeding 80 W/kg; and (c) A volume of less than 400 cm3; Note: This category does not apply to equipment designed or rated for operation in any frequency band which is “allocated by the International Telecommunication Union (ITU)” for radio communications services, but not for radio determination. 3A001.b.

IX.A3.016 Microwave Power Modules (MPMs) consisting of, at least, a travelling-wave “vacuum electronic device”, a “Monolithic Microwave Integrated Circuit” (“MMIC”) and an integrated electronic power conditioner and having all of the following: (a) A “turn-on time” from off to fully operational in less than 10 seconds; (b) A volume less than the maximum rated power in watts multiplied by 10 cm3/W; and (c) An “instantaneous bandwidth” of greater than 1 octave (fmax > 2fmin) and having any of the following: 1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or 2. A frequency greater than 18 GHz; Technical notes: 1. To calculate the volume in item b. above, the following example is provided: for a maximum rated power of 20 W, the volume would be: 20 W × 10 cm 3 /W = 200 cm 3 . 2. The “turn-on time” in item a. above refers to the time from fully off to fully operational, i.e., it includes the warm-up time of the MPM. 3A001.b.

IX.A3.017 Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than -(126 + 20log10F -20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz; Technical note: In the category above, F is the offset from the operating frequency in Hz and f is the operating frequency in MHz. 3A001.b.

IX.A3.018 “Frequency synthesizer”“electronic assemblies” having a “frequency switching time” as specified by any of the following: (a) Less than 143 ps; (b) Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesized frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz; (c) Less than 500 μs for any frequency change exceeding 550 MHz within the synthesized frequency range exceeding 31,8 GHz but not exceeding 37 GHz; (d) Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesized frequency range exceeding 37 GHz but not exceeding 90 GHz; or (e) Less than 1 ms within the synthesized frequency range exceeding 90 GHz; 3A001.b.

IX.A3.019 “Transmit/receive modules”, “transmit/receive MMICs”, “transmit modules” and “transmit MMICs”, rated for operation at frequencies above 2,7 GHz and having all of the following: (a) A peak saturated power output (in watts), Psat, greater than 505,62 divided by the maximum operating frequency (in GHz) squared [Psat > 505,62 W * GHz2/fGHz 2] for any channel; (b) A “fractional bandwidth” of 5 % or greater for any channel; (c) Any planar side with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d ≤ 15 cm * GHz * N/fGHz] where N is the number of transmit or transmit/receive channels; and d. An electronically variable phase shifter per channel; Technical notes: 1. A “transmit/receive module” is a multifunction “electronic assembly” that provides bidirectional amplitude and phase control for transmission and reception of signals. 2. A “transmit module” is an “electronic assembly” that provides amplitude and phase control for transmission of signals. 3. A “transmit/receive MMIC” is a multifunction “MMIC” that provides bidirectional amplitude and phase control for transmission and reception of signals. 4. A “transmit MMIC” is a “MMIC” that provides amplitude and phase control for transmission of signals. 5. 2,7 GHz should be used as the lowest operating frequency (fGHz) in the formula in item (c) for transmit/receive or transmit modules that have a rated operation range extending downward to 2,7 GHz and below [d ≤15 cm * GHz * N/2,7 GHz]. 6. Item IX.A3.019 applies to “transmit/receive modules” or “transmit modules” with or without a heat sink. The value of d in item 11.c. does not include any portion of the “transmit/receive module” or “transmit module” that functions as a heat sink. 7. “Transmit/receive modules”, “transmit modules”, “transmit/receive MMICs” or “transmit MMICs” may or may not have N integrated radiating antenna elements where N is the number of transmit or transmit/receive channels. 3A001.b.

IX.A3.020 Surface acoustic wave and surface skimming (shallow bulk) acoustic devices with any of the following: (a) A carrier frequency exceeding 6 GHz; (b) A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following: 1. A “frequency side-lobe rejection” exceeding 65 dB; 2. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100; 3. A bandwidth of greater than 250 MHz; or 4. A dispersive delay of more than 10 μs; or (c) A carrier frequency of 1 GHz or less and having any of the following: 1. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100; 2. A dispersive delay of more than 10 μs; or 3. A “frequency side-lobe rejection” exceeding 65 dB and a bandwidth greater than 100 MHz; 3A001.c.

IX.A3.021 Bulk (volume) acoustic wave which permit the direct processing of signals at frequencies exceeding 6 GHz; 3A001.c.

IX.A3.022 Acoustic-optic “signal processing” devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution; 3A001.c.

IX.A3.023 Electronic devices and circuits containing components, manufactured from “superconductive” materials, specially designed for operation at temperatures below the “critical temperature” of at least one of the “superconductive” constituents and having any of the following: (a) Current switching for digital circuits using “superconductive” gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10– 14 J; or (b) Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10 000 ; 3A001.d.

IX.A3.024 High-energy cells, as follows: (a) “Primary cells” having an “energy density” exceeding 550 Wh/kg at 20 °C; (b) “Secondary cells” having an “energy density” exceeding 350 Wh/kg at 20 °C; Technical notes: 1. For the purposes of high-energy devices, “energy density” (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared, then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms. 2. For the purposes of high-energy devices, a “cell” is defined as an electrochemical device, which has positive and negative electrodes and an electrolyte, and is a source of electrical energy. It is the basic building block of a battery. 3. For the purposes of high-energy devices, a “primary cell” is a “cell” that is not designed to be charged by any other source. 4. For the purposes of high-energy devices, a “secondary cell” is a “cell” that is designed to be charged by an external electrical source. Note: High-energy devices do not apply to batteries, including single-cell batteries. 3A001.e.

IX.A3.025 High-energy storage capacitors, as follows: (a) Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following: 1. A voltage rating equal to or more than 5 kV; 2. An energy density equal to or more than 250 J/kg; and 3. A total energy equal to or more than 25 kJ; (b) Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following: 1. A voltage rating equal to or more than 5 kV; 2. An energy density equal to or more than 50 J/kg; 3. A total energy equal to or more than 100 J; and 4. A charge/discharge cycle life equal to or more than 10 000 ; 3A001.e.

IX.A3.026 “Superconductive” electromagnets and solenoids, specially designed to be fully charged or discharged in less than one second and having all of the following: Note: The item above does not apply to “superconductive” electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. (a) Energy delivered during the discharge exceeding 10 kJ in the first second; (b) Inner diameter of the current carrying windings of more than 250 mm; and (c) Rated for a magnetic induction of more than 8 T or “overall current density” in the winding of more than 300 A/mm2; 3A001.e.

IX.A3.027 Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are “space-qualified”, having a minimum average efficiency exceeding 20 % at an operating temperature of 301 K (28 °C) under simulated “AM0” illumination with an irradiance of 1 367 watts per square metre (W/m2); Technical note: “AM0”, or “Air Mass Zero”, refers to the spectral irradiance of sunlight in the Earth's outer atmosphere when the distance between the Earth and the sun is one astronomical unit (AU). 3A001.e.

IX.A3.028 Rotary input type absolute position encoders having an “accuracy” equal to or less (better) than 1,0 second of arc and specially designed encoder rings, discs or scales therefor; 3A001.f.

IX.A3.029 Solid-state pulsed power switching thyristor devices and “thyristor modules”, using either electrically, optically or electron radiation controlled switch methods and having any of the following: 1. A maximum turn-on current rate of rise (di/dt) greater than 30 000 A/μs and off-state voltage greater than 1 100 V; or 2. A maximum turn-on current rate of rise (di/dt) greater than 2 000 A/μs and having all of the following: a. An off-state peak voltage equal to or greater than 3 000 V; and b. A peak (surge) current equal to or greater than 3 000 A; Notes: 1. Item (g) above includes: — Silicon Controlled Rectifiers (SCRs); — Electrical Triggering Thyristors (ETTs); — Light Triggering Thyristors (LTTs); — Integrated Gate Commutated Thyristors (IGCTs); — Gate Turn-off Thyristors (GTOs); — MOS Controlled Thyristors (MCTs); — Solidtrons. 2. Item (g) above does not apply to thyristor devices and “thyristor modules” incorporated into equipment designed for civil railway or “civil aircraft” applications. Technical note: For the purposes of item (g) above, a “thyristor module” contains one or more thyristor devices. 3A001.g.

IX.A3.030 Solid-state power semiconductor switches, diodes or “modules”, having all of the following: 1. Rated for a maximum operating junction temperature greater than 488 K (215 °C); 2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and 3. Continuous current greater than 1 A. Note: Repetitive peak off-state voltage in the item above includes drain to source voltage, collector to emitter voltage, repetitive peak reverse voltage and peak repetitive off-state blocking voltage. 3A001.h.

IX.A3.031 Recording equipment and oscilloscopes, as follows 1. Digital data recorders having all of the following: a. A sustained “continuous throughput” of more than 6,4 Gbit/s to disk or solid-state drive memory; and b. A processor that performs analysis of radio frequency signal data while it is being recorded; Technical notes: 1. For recorders with a parallel bus architecture, the “continuous throughput” rate is the highest word rate multiplied by the number of bits in a word. 2. “Continuous throughput” is the fastest data rate the instrument can record to disk or solid-state drive memory without the loss of any information while sustaining the input digital data rate or digitizer conversion rate. 2. Real-time oscilloscopes having a vertical root-mean-square (rms) noise voltage of less than 2 % of full-scale at the vertical scale setting that provides the lowest noise value for any input 3 dB bandwidth of 60 GHz or greater per channel; 3A002.a.

IX.A3.032 “Signal analysers”, as follows: 1. “Signal analysers” having a 3 dB resolution bandwidth (RBW) exceeding 10 MHz anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; 2. “Signal analysers” having Displayed Average Noise Level (DANL) less (better) than - 150 dBm/Hz anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 3. “Signal analysers” having a frequency exceeding 90 GHz; 4. “Signal analysers” having all of the following: a. “Real-time bandwidth” exceeding 170 MHz; and b. Having any of the following: 1. 100 % probability of discovery, with less than a 3 dB reduction from full amplitude due to gaps or windowing effects, of signals having a duration of 15 μs or less; or 2. A “frequency mask trigger” function with 100 % probability of trigger (capture) for signals having a duration of 15 μs or less; Technical notes: 1. Probability of discovery in item 1. above is also referred to as probability of intercept or probability of capture. 2. For the purposes of item 1. above, the duration for 100 % probability of discovery is equivalent to the minimum signal duration necessary for the specified level measurement uncertainty. Note: The category above does not apply to those “signal analysers” using only constant percentage bandwidth filters (also known as octave or fractional octave filters). 3A002.c.

IX.A3.033 Signal generators having any of the following: 1. Specified to generate pulse-modulated signals having all of the following, anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz: a. “Pulse duration” of less than 25 ns; and b. On/off ratio equal to or exceeding 65 dB; 2. An output power exceeding 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 3. A “frequency switching time” as specified by any of the following: a. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz b. Less than 500 μs for any frequency change exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; or c. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 90 GHz; 3A002.d.

IX.A3.034 Network analysers having any of the following: 1. An output power exceeding 31,62 mW (15 dBm) anywhere within the operating frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 2. An output power exceeding 1 mW (0 dBm) anywhere within the operating frequency range exceeding 90 GHz but not exceeding 110 GHz; 3. “Non-linear vector measurement functionality” at frequencies exceeding 50 GHz but not exceeding 110 GHz; or 4. A maximum operating frequency exceeding 110 GHz; Technical note: “Non-linear vector measurement functionality” is an instrument's ability to analyse the test results of devices driven into the large-signal domain or the non-linear distortion range. 3A002.e.

IX.A3.035 Microwave test receivers having all of the following; 1. A maximum operating frequency exceeding 110 GHz; and 2. Being capable of measuring amplitude and phase simultaneously; 3A002.f.

IX.A3.036 Atomic frequency standards being any of the following: 1. “Space-qualified”; 2. Non-rubidium and having a long-term stability less (better) than 1 × 10– 11/month; or 3. Non-“space-qualified” and having all of the following: a. Being a rubidium standard; b. Long-term stability less (better) than 1 × 10– 11/month; and c. Total power consumption of less than 1 Watt. 3A002.f.

IX.A3.037 Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor: (a) Equipment designed for ion implantation and having any of the following: 1. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant; 2. Direct write capability; 3. A beam energy of 65 keV or more and a beam current of 45 mA or more for high-energy oxygen implant into a heated semiconductor material “substrate”; or 4. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material “substrate” heated to 600 °C or greater; (b) Lithography equipment as follows and imprint lithography equipment capable of producing features of 45 nm or less: 1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following: a. A light source wavelength shorter than 193 nm; or b. Capable of producing a pattern with a “Minimum Resolvable Feature size” (MRF) of 45 nm or less; Technical note: The ‘Minimum Resolvable Feature size’ (MRF) is calculated by the following formula: where the K factor = 0,35 (c) Equipment specially designed for mask using deflected focused electron beam, ion beam or “laser” beam; 3B001.b. 3B001.f. 3B001.f.

IX.A3.038 Equipment designed for device processing using direct writing methods; Masks and reticles, designed for integrated circuits. 3B001.g.

IX.A3.038 Test equipment specially designed for testing finished or unfinished semiconductor and microwave devices as follows and specially designed components and accessories therefor: (a) For testing S-parameters of transistor devices at frequencies exceeding 31,8 GHz; (b) For testing microwave integrated circuits specified above. 3B002

IX.A3.039 Hetero-epitaxial materials consisting of a “substrate” having stacked epitaxially grown multiple layers with any of the following: (a) Silicon (Si); (b) Germanium (Ge); (c) Silicon Carbide (SiC); or (d) “III/V compounds” of gallium or indium. Note: This item does not apply to a “substrate” having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers. 3C001

IX.A3.040 Resist materials as follows and “substrates” coated with the following resists: (a) Resists designed for semiconductor lithography as follows: 1. Positive resists adjusted (optimized) for use at wavelengths less than 245 nm but equal to or greater than 15 nm; 2. Resists adjusted (optimized) for use at wavelengths less than 15 nm but greater than 1 nm; (b) All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better; (c) All resists optimized for surface imaging technologies; (d) All resists designed or optimized for use with imprint lithography equipment capable of producing features of 45 nm or less that use either a thermal or photo-curable process. 3C002

IX.A3.041 Organo-inorganic compounds: (a) Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %; (b) Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %. 3C003

IX.A3.042 Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note: The item above does not apply to hydrides containing 20 % molar or more of inert gases or hydrogen. 3C004

IX.A3.043 Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor “substrates”, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C. 3C005