23.12.85 OfficialJournaloftheEuropean Communities NoL346/1
I
(Actswhosepublication isobligatory )
COUNCIL REGULATION (EEC)No3577/85
of26November 1985
temporarily suspending theautonomous CommonCustomsTariffdutiesonanumberof
industrialproducts
HASADOPTED THISREGULATION :
Article 1
Theautonomous Common Customs Tariffdutiesforthe
productslistedinthetablesannexedtothisRegulation shall
besuspended atthelevelindicated inrespectofeachof
them.
Thesesuspensions shallbevalid:
—from1January1986to31March1986fortheproducts
listedinTableI,
—from1January1986to30June1986fortheproducts
listedinTableII.THECOUNCIL OFTHEEUROPEAN COMMUNITIES ,
HavingregardtotheTreatyestablishing theEuropean
Economic Community ,andinparticular Article28
thereof,
HavingregardtothedraftRegulation submitted bythe
Commission ,
Whereasproduction oftheproductsreferredtointhis
Regulation isatpresentinadequate ornon-existent within
theCommunity andproducers arethusunabletomeetthe
needsofuserindustries intheCommunity ;
WhereasitisintheCommunity 'sinteresttosuspendthe
autonomous CommonCustomsTariffdutiesonlypartially
incertaincases,dueparticularly totheexistence of
Community production ,andtosuspendthemcompletely in
othercases;
Whereas ,takingaccountofthedifficulties involvedin
accurately assessingthedevelopment oftheeconomic
situationinthesectorsconcerned inthenearfuture,these
suspension measuresshouldbetakenonlytemporarily with
theirtermofvalidityfixedtocoincidewiththeinterestsof
Community production ,Article2
ThisRegulation shallenterintoforceon1January1986.
ThisRegulation shallbebindinginitsentiretyanddirectlyapplicable inallMember
States.
DoneatLuxembourg ,26November 1985.
FortheCouncil
ThePresident
J.F.POOS

NoL346/2 OfficialJournaloftheEuropean Communities 23.12.85
ANNEX
TABLE I
DescriptionCCT
headingNoRateof
autonomous
duty(%)
ex29.04AIIIa
ex84.55C
ex84.55C2-Methylpropan-2-ol (tent-butylalcohol)withapurityofnotlessthan90%butnotmorethan
96%byweight
Dotmatrixdisplays,whoseexternaldimensions donotexceed14x40x210mmexcluding
cablesandconnectors ,consisting oftwoglasslayersorsheetsinwhicharearrangedcrystal
displayswith2560dots(arrangedin16linesand160columns )or2400dots(arrangedin16
linesand150columns )mountedonaprintedcircuitboardcomprising electroniccomponents
providing driveandcontrolfunctions ,withorwithout10or20-coreflatcableconnector
Assemblies forautomatic data-processing machines ,comprising staticrandom-access
memoriesofC-MOStechnology (C-MOSS-RAMs )withastoragecapacityof256Kbits,
consisting ofamultilayer substrate ,theexteriordimensions ofwhichdonotexceed
17x39mm,onwhicharemounted :
—fourstaticrandom-access memoriesofC-MOStechnology (C-MOSS-RAMs )intheform
ofmonolithic integrated circuitswithacapacityof64Kbits,eachcontained inaceramic
housing,
—adecoderintheformofamonolithic integrated circuit,
—adecoupling capacitor .
Theassemblies havenotmorethan28connecting pinsandbear:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:0
0
0EDH8832MC20
or
—otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description (a)
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

23.12.85 OfficialJournaloftheEuropeanCommunities NoL346/3
TABLE II
CCT
headingNo
ex13.03AVDescription
ExtractofdewaxedpyrethrumRateof
autonomous
duty(%)
0
ex27.13BII 1-Alkenescontaining aC18toC30carbonchains 0
ex28.05CI Alloysofceriumandotherrareearthmetalscontaining notlessthan47%byweightof
cerium 0
ex28.20A Aluminium hydroxide oxideintheformofpseudoboehmite 4
ex28.49CIIand
ex30.03AIIb)Carboplatin (INN)
0
ex29.03CI 2,2,2-Trifluoroethyl trichloromethanesulphonate 0
ex29.04CI Hexane-l,6-diol 0
ex29.08AIIIc) Bis(phenoxyphenoxy )benzene,mixedisomers 0
ex29.08AIIIc) 1,2-Bis(2,4,6,-tribromophenoxy )ethaneforuseinthemanufacture of
acrylonitrile-butadiene-styrene (ABS)(a) 0
ex29.13E 6'-Methoxy-2'-propiononaphthone 0
ex29.13F Ubidecarenone (INN)(Coenzyme Q-10) 0
ex29.16D 2,6-Dimethoxybenzoic acid 0
ex29.21BII 0,0'-Dioctadecyl pentaerythritol bis(phosphite ) 0
ex29.22EII 1,8-Naphthylenediamine 0
ex29.23DV Diclofenac sodium (INNM) 0
ex29.26AI 1,2-Benzisothiazol-3-one 1,1-dioxide ,sodiumsalt 0
ex29.31B Aldicarb (ISO),dissolved indichloromethane 0
ex29.34C 2-Diphenylphosphinobenzoic acid 0
ex29.35Q Adenosine phosphate (INN) 0
ex29.35Q 3-(l-Ethyl-l-methylpropyl)isoxazol-5-ylamine 0
ex29.35Q 4,4-£is(hydroximinomethyl)-l,l '-(oxydimethylene )=dipyridinium dichloride 0
ex29.35Q Zotepine (INN) 4
ex29.35Q (RS)-l-[2-(4-Chlorobenzhydryloxy)ethyl ]piperidine anditssalts 4
ex29.38A Nicotinic acid(INN) 0
ex29.38BII Dexpanthenol (INN) 0
(a)ControlortheusetorthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL346/4 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoRateof
autonomous
duty(%)Description
ex29.38BIII
ex29.38BV
ex29.39CI
ex29.39DII
ex29.39DII
ex29.39E
ex29.39E
ex29.39E
ex29.44A
ex29.44A
ex29.44Aand
ex30.03AIIa)1
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44C
ex29.44CFolicacid(INN)
Nicotinamide (INN)
Serumgonadotrophin (INN)
Betamethasone 17,21-dipropionate (INNM)
Diflorasone di(acetate )(INNM)
Calcitonin (INN),salmon-type anditssalts
Prasterone (INN)
Calcitonin (INN),porcine
Epicillin (INN)
Piperacillin (INN)
Piperacillin sodium (INNM)
Amphotericin B(INN)
Minocycline (INN)anditssalts
Clindamycin (INN)anditssaltsandesters
Spectinomycin dihydrochloride (INNM),pentahydrate
Nystatin (INN)
Sisomicinsulphate (INNM)
Spectinomycin sulphate (INNM)
Tobramycin (INN)anditssalts
Lincomycin (INN)anditssaltsandesters,forthemanufacture ofproductsfallingwithin
headingNo30.03(a)
Monensin (INN)anditssalts
Cefaclor (INN)anditshydrates,saltsandesters
Netilmicin sulphate (INNM)
Dibekacin sulphate (INNM)
Cefoxitin sodium (INNM)
Cefradine (INN)0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL346/5 23.12.85 OfficialJournaloftheEuropean Communities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex29.44C Cefamandole (INN)anditssaltsandesters 0
ex29.44C Cefazolin (INN)anditssalts 0
ex29.44C Latamoxef (INN)anditssaltsandesters 0
ex29.44C Josamycin (INN)0
ex29.44C Josamycin propionate (INNM) 0
ex29.44C Ribostamycin sulphate (INNM) 0
ex29.44C Fumagillin dicyclohexylammonium (INNM) 0
ex29.44C Ceftezole (INN) 0
ex29.44C Aztreonam (INN) 0
ex29.44C Imipenem (INN) 0
ex29.44C Cefotetan (INN) 0
ex29.44C Ceftizoxime sodium (INNM) 0
ex29.44C Midecamycin (INN)anditsacetates 0
ex29.44Cand
ex30.03AIIb)Amikacin (INN)anditssalts
0
ex29.44Cand
ex30.03AIIb)Mitomycin (INN)
0
ex29.44Cand
ex30.03AIIb)Bleomycin sulphate (INNM)
0
ex29.44Cand
ex30.03AIIb)Aclarubicine hydrochloride (INNM)
0
ex38.19G Catalysts ,intheformofapowder,consisting ofamixtureoftitanium ,magnesium and
aluminium compounds onacarrierofsilicondioxide,containing byweight:
—notlessthan3andnotmorethan6%oftitanium ,
—notlessthan2andnotmorethan3%ofmagnesium ,
—notlessthan0,3andnotmorethan0,5%ofaluminium ,
foruseintheproduction ofpolyethylene withadensityofatleast0,935g/cm3(a) 0
ex38.19G Catalysts ,consistingofdialkyldimethylammoniumacetate containing chainlengthsof16and
18carbonatoms,suspended inorganicsolventstoaconcentration ofnotlessthan40%by
weight 0
ex38.19X Amixture of5-ethyl-2-methyl-2-oxo-l ,3,2A,s-dioxaphosphoran-5-ylmethyl methyl
methylphosphonate andbis(5-ethyl-2-methyl-2-oxo-l ,3,2Xs-dioxaphosphoran-5-ylmethyl )
methylphosphonate 0
ex38.19X Butylethylmagnesium dissolvedinorganicsolventstoaconcentration ofnotlessthan19%but
notmorethan30%byweight 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

23.12.85 NoL346/6 OfficialJournaloftheEuropeanCommunities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex38.19X Mixedoxidesofbarium,bismuth,lead,titaniumandzincinpowderform,havingabarium
contentofnotlessthan5%andatitaniumcontentofnotlessthan15%byweight,foruseas
dielectricmaterialsduringthemanufacture ofmultilayer ceramiccapacitors (a) 0
ex39.01CIa) Polycondensation productsofphenolandformaldehyde intheformofhollowsphereswitha
diameter oflessthan150micrometres 0
ex39.01CIV Poly(epsilon-caprolactam )filmhavingasofteningpointofnotlessthan200°C 0
ex39.02CIa) Polyethylene ,inoneoftheformsmentioned innote3(b)toChapter39,havingadensityofnot
lessthan0,958g/cm3at23°Candcontaining byweightnotmorethan:
—50ppmofaluminium
—2ppmofcalcium
—2ppmofchromium
—2ppmofiron
—2ppmofnickel
—2ppmoftitanium
—8ppmofvanadium
forthemanufacture ofchlorosulphonated polyethylene (a) 0
ex39.02CIa) Polyethylene ,inoneoftheformsmentioned innote3(b)toChapter39,havingadensityofnot
lessthan0,945andnotmorethan0,985g/cm3forthemanufacture oftypewriter ribbonor
similarribbon (a) 0
ex39.02CII Microporous polytetrafluoroethylene filmcoatedononesidewithapolymerpermeable to
watervapournotlessthan30cminwidthandweighingnotmorethan50g/m2 0
ex39.02CII Microporous polytetrafluoroethylene filmofawidthofnotlessthan30cmandweighingnot
morethan22,4g/m2 0
ex39.02CII Poly(1-chlorotrifluoroethylene )film 0
ex39.02CXI Poly(vinylbutyral)filmhavingagraduated colouredband
i8
ex39.02CXIVa) Polymerization productsofacrylicacid,withalkylmethacrylate andsmallquantitiesofother
monomers foruseasthickeners inthemanufacture oftextileprintingpastes(a) 0
ex39.02CXIVa) Copolymers ofvinylalcoholwithethylene,inoneoftheformsmentioned innote3(b)to
Chapter39 5
ex39.03BVa)1 Ethylcellulose ,notplasticized 0
ex39.03BVa)2 Hydroxyalkylhydroxyethylcellulose 0
ex39.03BVa)2 Alkylhydroxyethylcellulose 0
ex39.07BVd) Twopolyethylene sheetscontaining multipleslitslaidcrosswiseuponeachotherandbonded
together 0
ex56.01A Acetalized ,multicomponent spunfibreswithamatrixfibrilstructure ,consistingofemulsion
polymerized poly(vinylalcohol)andvinylchloride 0
ex59.03B Spun-bonded fibrefabricofcontinuous polyesterfilamentsbondedtogetherwithpolyacrylates ,
pressedandembossedwithaweavepattern,whetherornotimpregnated orcoated,inthepiece
orcutintorectangles 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL346/7 23.12.85 OfficialJournaloftheEuropeanCommunities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex69.03Cand
ex69.09BYarnofcontinuous ceramicfilaments ,eachfilamentofwhichcontainsnotlessthan12%by
weightofdiborontrioxide,notmorethan26%byweightofsilicondioxideandnotlessthan
60%byweightofdialuminium trioxide 0
ex70.11 Glassenvelopes ,formonochrome cathode-ray tubes,havingarectangular diagonalfaceofnot
lessthan22cmandnotexceeding 51cm,andanominalneckdiameterof20mm,29mmor
37mm 0
ex70.20A Non-textile glassfibreshavingadiameteroflessthanfourmicrometres 0
ex70.20A Webs,felts,thinsheetsandsimilarproductsofnon-textile glassfibres,ofaweightpersquare
metreofnotmorethan120gandafibrediameter ,excluding anycoating,ofnotmorethan
7micrometres ,forthemanufacture offiltrationproducts (a) 0
ex70.20B Yarns,spunfromcontinuous glassfilamentshavingadiameterofnotlesthan5,8micrometres
andnotmorethan7,1micrometres of33,34or51tex±7,5%,oramultiplethereof 0
ex70.20B Yarnsof22texspunfromcontinuous glassfilamentshavingadiameterofnotlessthan4,7and
notmorethan5,5micrometres 0
ex84.18CIIb) Partsofapparatus forcatalyticconversion ofnitrogenoxidesintonitrogenandwater,
consistingofshapedandfiredunitsinhoneycomb structureofamixtureofvanadiumoxidesor
vanadiumsulphatesandtitaniumdioxideorbariumsulphateorofvanadiumoxide,tungsten
(wolfram )oxideandtitaniumdioxide,contained inametalbasket 0
ex84.55C Winchester orthinfilmtechnology magneticheadsfordiscfileperipherals ,aswellascarrying
armsequippedwithsuchmagneticheads,capableofrecordingtoadensityofnotlessthan
10trackspermillimetre 0
ex84.55C Dotmatrixdisplays,whoseexternaldimensions donotexceed15x90x280mmexcluding
cablesandconnectors consistingofalayerofliquidcrystalsbetweentwosheetsorplateswith
30720dots(arrangedin64linesand480columns),mountedonaprinted-circuit board
comprising electroniccomponents providing drivefunctions ,withorwithoutcableand
connector 0
ex84.55C Dotmatrixdisplaysconsistingofalayerofliquidcrystalbetweentwoglasssheetsorplateswith
amaximumof15360dots(arrangedin64linesand240columns),completewithaninterface
electronics boardinC-MOStechnology whoseexteriordimensions donotexceed
181x76x15mm,withnotmorethan544connecting areas 0
ex84.55C Magneticread/writeelementsinthinfilmtechnology forthemanufacture ofmagneticheads
fordiscfileperipherals ,capableofrecordingtoadensityofnotlessthan10trackspermm,in
theformofsheetsmeasuring notmorethan48x48mmandcontaining notlessthan200
elementsorintheformofstripsmeasuring notmorethan4x48mmandcontaining notless
than10elements (a) 0
ex84.55C Assemblies forautomaticdata-processing machines ,consistingoftwostackedsubstratelayers
eachwithtwostaticrandom-access memoriesofN-MOS (includingH-MOS )technology
(N-MOS-S-RAMs ),intheformofmonolithic integratedcircuitseachwithastoragecapacityof
2Kbitsandwithatotalstoragecapacityofeither8Kx1bit,or4Kx2bits,contained ina
housing,theexteriordimensions ofwhichdonotexceed13x13mm,withnotmorethan
23connecting pinsandbearing :
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL346/8 OfficialJournaloftheEuropean Communities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex84.55C
(cont'd)anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
4598601
5121850
5121934
5121935
5122148
5123059
5123120
5123128
5123129
5123337
5123339
or
otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 0
ex84.55C Assemblies forautomaticdata-processing machines ,comprising UV-erasable ,programmable ,
read-onlymemories (EPROMs ),withastoragecapacityof256Kbits,consistingofamultilayer
substrate ,theexteriordimensions ofwhichdonotexceed17x39mm,pnwhichare
mounted :
—twoUV-erasable ,programmable ,read-only memories (EPROMs ),intheformof
monolithic integrated circuits,eachwithastoragecapacityof128Kbitsandaquartz
windowontheuppersurface
—adecoderintheformofamonolithic integrated circuit
—adecoupling capacitor
—tworesistances
Theassemblies bear:
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
EDH7832MM-30
or
—otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 2
ex84.55C Assemblies forautomaticdata-processing machines ,comprising UV-erasable ,programmable ,
read-onlymemories (EPROMs),withastoragecapacityof256Kbits,consistingofamultilayer
substrate ,theexteriordimensions ofwhichdonotexceed17x39mm,onwhichare
mounted :
—fourUV-erasable ,programmable ,read-only memories (EPROMs ),intheformof
monolithic integrated circuits,eachwithastoragecapacityof64Kbitsandaquartz
windowontheuppersurface
—onedecoderintheformofamonolithic integrated circuit
—onedecoupling capacitor
Theassemblies bear:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
EDH7832MC-35
or
otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 2
ex84.55C Assemblies forautomatic data-processing machines ,comprising staticrandom-access
memoriesofC-MOStechnology (C-MOSS-RAMs )withastoragecapacityof32Kbits
consisting ofamultilayer substrate ,theexteriordimensions ofwhichdonotexceed
17x39mm,withnotmorethan28connecting pins,onwhicharemounted :
—twostaticrandom-access memoriesofC-MOStechnology (C-MOSS-RAMs )intheform
ofmonolithic integrated circuitseachwithastoragecapacityof16Kbits

NoL346/9 23.12.85 OfficialJournaloftheEuropean Communities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex84.55C
(cont'd)—adecoderintheformofamonolithic integrated circuit
—adecoupling capacitor
Theassemblies bear:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
EDH8804C-20
EDH8804CL-20
or
—otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 2
ex84.55C Assemblies forautomatic data-processing machines ,comprising staticrandom-access
memoriesofC-MOStechnology (C-MOSS-RAMs )withastoragecapacityof64Kbits
consisting ofamultilayer substrate ,theexteriordimensions ofwhichdonotexceed
17x39mm,onwhicharemounted :
—fourstaticrandom-access memoriesofC-MOStechnology (C-MOSS-RAMs )intheform
ofmonolithic integrated circuitseachwithastoragecapacityof16Kbits
—adecoderintheformofamonolithic integrated circuit
—adecoupling capacitor
Theassemblies havenotmorethan28connecting pinsandbear:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
EDH8808B-20
EDH8808C-10
EDH8808C-12
EDH8808C-15
EDH8808C-20
EDH8808CL-15
EDH8808CL-20
or
—otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 2
ex84.55C Assemblies forautomaticdata-processing machines ,consistingoftwostackedsubstratelayers
eachwithtwoquasi-static random-access memories ofN-MOS (including H-MOS )
technology ,otherthandynamic (N-MOS (quasi-static RAMs)intheformofmonolithic
integratedcircuitseachwithastoragecapacityof4Kbitsandwithatotalstoragecapacityof
either16Kx1bitor8Kx2bits,contained inahousingtheexteriordimensions ofwhichdo
notexceed13x13mm,withnotmorethan24connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
4599766
4599767
4599768
4599769
4599770
4599771
4599772
4599773
4599774
4599893
or
otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 0
ex84.55C Assemblies forautomaticdata-processing machinescomprising aUV-erasable ,programmable ,
read-onlymemory (EPROM )withastoragecapacityof64Kbitsandastaticrandom-access

NoL346/10 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex84.55C
(cont'd)memoryofC-MOStechnology (C-MOSS-RAMs )withastoragecapacityof32Kbits
consisting ofamultilayer substrate ,theexteriordimensions ofwhichdonotexceed
17x39mm,withnotmorethan28connecting pins,onwhicharemounted :
—oneUV-erasable ,programmable ,read-onlymemory (EPROM )intheformofamonolithic
integrated circuit,withastoragecapacityof64Kbitsandwithaquartzwindowonthe
uppersurface
—twostaticrandom-access memoriesofC-MOStechnology (C-MOSS-RAMs )intheform
ofmonolithic integrated circuits,eachwithastoragecapacityof16Kbits
—onedecoderintheformofamonolithic integrated circuit
—onedecoupling capacitor
—tworesistances
Theassemblies bear:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
EDH90804BS-25(15)
EDH90804BS-30(20)
or
—otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 2
ex84.55C Assemblies forautomatic data-processing machinescomprising UV-erasable ,programmable ,
read-onlymemories (EPROMs )withastoragecapacityof128Kbitsandstaticrandom-access
memories ofC-MOStechnology (C-MOSS-RAMs )withastoragecapacityof128Kbits
consisting ofamultilayer substrate ,theexteriordimensions ofwhichdonotexceed
17x39mm,withnotmorethan28connecting pins,onwhicharemounted :
—twoUV-erasable ,programmable ,read-only memories (EPROMs )intheformof
monolithic integrated circuits,eachwithastoragecapacityof64Kbitsandaquartz
windowontheuppersurface
—twostaticrandom-access memoriesofC-MOStechnology (C-MOSS-RAMs )intheform
ofmonolithic integrated circuits,eachwithastoragecapacityof64Kbits
—onedecoderintheformofamonolithic integrated circuit
—onedecoupling capacitor
—tworesistances
Theassemblies bear:
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
EDH91616CL-3020
or
—otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 2
ex84.55C Assemblies forautomaticdata-processing machines ,comprising UV-erasable ,programmable ,
read-onlymemories (EPROMs )withastoragecapacityof64Kbitsandstaticrandom-access
memoryinC-MOStechnology (C-MOSS-RAM)withastoragecapacityof48Kbitsconsisting
ofamultilayer substrate ,theexteriordimensions ofwhichdonotexceed17x39mmwith
28connecting pinsonwhicharemounted :
—aUV-erasable ,programmable ,read-onlymemory (EPROM )intheformofamonolithic
integrated circuitwithastoragecapacityof64Kbitsandaquartzwindowontheupper
surface
—threestaticrandom-access memories inC-MOStechnology (C-MOSS-RAM)intheform
ofmonolithic integrated circuitseachwithastoragecapacityof16Kbits
—adecoderintheformofamonolithic integrated circuit
—adecoupling capacitor
—tworesistances

23.12.85 OfficialJournaloftheEuropean Communities NoL346/11
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex84.55C
(cont'd)Theassemblies bear:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
EDH90806BS-25(15)
EDH90806BS-30(20)
or
otheridentification markings relatingtoassemblies complying withtheabove
description2
ex84.55C Assemblies forautomaticdata-processing machines ,consistingoftwostackedsubstratelayers
withoneortwostaticrandomaccessmemoriesofbipolartechnology (bipolarS-RAMs )inthe
formofmonolithic integrated circuits,eachwithastoragecapacityof1Kbitsandwitha
maximum storagecapacityof4Kbits,contained inahousingtheexteriordimensions ofwhich
donotexceed13x13mm,withnotmorethan23connecting pinsandbearing :
—anidentification marking ,eitherconsisting oforincluding oneofthefollowing
combinations offigures :
770965
4599497
7379442
or
-otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 0
ex84.55C Magneticbubblememorieswithastoragecapacityofnotmorethan4megabitscontained ina
housingtheexteriordimensions ofwhichdonotexceed43x44mm,withnotmorethan
42connecting pinsorcontactareasandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresorfiguresandletters:
BDL0133 MBM2011 FBM64DA
BDL0134 MBM2256 7110
BDN0151 FBM54DB 7114-1
or
—otheridentification markings relatingtomagnetic bubblecomplying withthe
abovementioned description 0
ex84.55C Component formingthearithmetic/logicelementofacentralprocessing unit,comprising not
morethannineprintedcircuitboards,thedimensions ofwhichdonotexceed290x310mm
oneachofwhicharemountednotmorethan121ECLgatearraysorECLrandomaccess
memories (ECL-RAMs )andcombinations thereofcontained inaframework thedimensions of
whichdonotexceed611x501x596mmwhichservesasahousingandinterconnector for
theprintedcircuitboards,whichbear:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
CO1B2675E500
CO1B2675H500
CO1B2675H501
CO1B2675H502
CO1B2675H503
CO1B2675H504
or
otheridentification markingsrelatingtocomponents complying withtheabovementioned
description 0
ex84.55C Displayunitwithmaximum dimensions ,excluding cablesandconnectors ,of
15x115x290mm,comprising twolayersorsheetsofglassenclosing 128000
liquid-crystal dotsarrangedin200rowsand640columns,fixedtoaprintedcircuitfittedwith
electronic components performing controlfunctions ,withorwithoutcablesand
connectors 0

NoL346/12 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex84.63BII Integrallyforgedandroughlyshapedgeneratorandturbineshaftsofaweightexceeding
215tonnes 0
ex85.01BIb) DCelectricmotor,brushless ,withamaximum torqueof0,20N/m,withanincorporated
electroniccontrolplate,outsiderotorwithcircularcross-section andmaximum diameterof
95mm,aluminium precision-made hubwithinsidediameterof28,6mm,speedof300or360
rpm,supplyvoltageof12volts±10% 0
ex85.01BIb) DCelectricmotor,brushless ,withamaximum torqueof0,20N/m,withoutsiderotorofa
maximum diameterof55mm,couplingflangeofadiameterof77mmandprecision-made
chuckofadiameterof44mm,four-phase winding ,ratedspeedof3600rpm,supplyvoltage
12volts±10%andfittedwithwiresandconnectors 0
ex85.01BIb) Twoorthree-phase DCelectricmotor,brushless ,withamaximumtorqueof0,20N/m,with
anexternalrotorof62mmmaximum diameterandincorporating anelectroniccontrolpanel,
maximum dimensions 85x85x20mm,includingtheshaft,nominaloperatingvoltageof
12volts±10%andarateofrotationof300rpm 0
ex85.01Bib) Bipolarsteppingmotorswithanangleofstepof1,8degrees200stepsperrevolution ,2-phase
rotationsequence withbipolar-type windings ,maximum externaldimensions of
39x39x20or25mmexcludingshaft,fixingscrewsandboss,withaminimumtorqueof
0,25N/mfortheversionwithamaximum heightof20mmand0,35N/mfortheversionwith
amaximum heightof25mm 0
ex85.01BIb) Hybridsteppingmotor,withanangleofstepof0,9°,400stepsperrevolution ,4-phaserotation
sequencewithbipolar-type winding,consistingofarotor,ofalaminatedstatorheldbetween
twosquareflanges,notmorethan40mmwide,fittedwithbiterminate shaft,wiresand
connectors 0
ex85.01BIb) Hybridsteppingmotorwithanangleofstepof0,9°,400stepsperrevolution ,2-phaserotation
sequenceandbipolarwindings ,comprising arotorandastatorencapsulated inacylindrical
housingwithamaximum diameterof47mmandmaximum thicknessof14mm,fittedwitha
singleshaftoutputandcableswithconnectors 0
ex85.01BIb) Hybridsteppingmotorwithanangleofstepof0,9°,400stepsperrevolution and2-phase
rotationsequence ,andbipolarwindings ,comprising arotor,alaminated statorenclosed
betweentwosquaresectionflangeswithsidesnotexceeding 40mm,anintegraltwoor
three-phase tachometer enclosedinacapwithamaximum diameterof35mm,andseparate
cablesandconnectors forthemotorandtachometer outputs,withmaximum dimensions of
40x40x62mm,includingtheshaft 0
ex85.03 Lithiumiodinesinglecellbatterywithdimensions of45x9x23mmandavoltagenot
exeeding2,8 0
ex85.13Bor
ex85.21DIIOpto-electronic receivingdevice(PINFETreceiver)withawavelength range1300-1600
nanometres ,andaspeedofnotlessthan165megabitspersecond,intheformofahybrid
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
25mmx13mmx13mm,withnotmorethan16connecting pins,withanattachedoptical
fibrelead(pig-tail),andbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
416/7/97013
QDFI-XXXX-00 1
or
—otheridentification markingsrelatingtodevicescomplying withtheabovementioned
description 0

23.12.85 OfficialJournaloftheEuropean Communities NoL346/13
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.18B Adjustable capacitor ,intheformofacircularplatefittedwithascrewheadinitscentreandtwo
connecting tags,ofathicknessnotexceeding 3mmandacapacityoffrom5to30picofarads ,
forthemanufacture ofproductsfallingwithinChapter91(a) 0
ex85.19A Thermalrelayscontained inahermetically sealedglasscartridgenotexceeding 35mminlength
excludingwires,withamaximumleakagerateof10-6cm3He/secat1barinthetemperature
range0to160°C,tobeincorporated intocompressors forrefrigerating equipment (a) 0
ex85.19A Reedswitchesintheformofaglasscapsulecontaining notmorethanthreeelectricalcontacts
onmetalarmsandasmallquantityofmercury 0
ex85.19C Single-face printedcircuit,ofdimensions notexceeding30x30mm,forthemanufacture of
productsfallingwithinChapter91(a) 0
ex85.21AV Cathode-ray tubeswithdotmask(so-calleddot-masktechnology ),withelectrongunsarranged
intriangular fashion(so-calleddeltatechnology ),withadistancebetweenthecoloureddotsof
0,31mm,withdevicesforautomatic convergence 0
ex85.21AV Cathode-ray tubeswithamemory (directviewstoragetubes)forthereproduction of
alphanumeric andanaloguedata,equippedwithascanningdevice,forreadingtheimages 0
ex85.21AV Colourcathode-ray tubes,usingshadowmask,in-linetechnology inwhichimagesare
displayedonascreenwithausablesurfacenotexceeding 165x165mmforuseinelectronic
flightinstrument ,warningandsystemsdisplays (a) 0
ex85.21AV Colourcathode-ray rubeswithadotmaskequippedwithelectrongunsplacedsidebyside
(in-linetechnology )withadistanceoflessthan0,4mmbetweencolourdotsandwithatleast
oneofthefollowingcharacteristics :
—adiagonalscreenmeasurement ofatleast48cm,adiagonalangleofdeflectionofamost
90°andconvergence errorsofnotmorethan0,8mmmaximum inthecorners
—equippedwithaninseparable claddingonthetubesforabsorbing vibrations (petting
system)
—withoutinternalmagneticscreen
—equippedwithaphosphorlayercalibrated withthefollowingco-ordinates forthecolour
dots:red:X=0,64andY=0,33orX=0,64andY=0,34;green:X=0,29and
Y=0,60orX=0,31andY=0,595;blue:X=0,15andY=0,06orX=0,155and
Y=0,07 0
ex85.21AV Colourcathoderaytubeswithadotmaskequippedwithelectrongunsinatriangularfashion
(deltatechnology )withadistanceoflessthan0,4mmbetweencolourdots,withatleastoneof
thefollowingcharacteristics :
—adiagonalscreenmeasurement ofatleast66cm
—equippedwithaphosphorlayercalibrated withthefollowingco-ordinates forthecolour
dots:red:X=0,64andY=0,33orX=0,64andY=0,34;green:X=0,29and
Y=0,60orX=0,31andY=0,595;blue:X=0,15andY=0,06orX=0,155and
Y=0,070
0
ex85.21AV Displaysintheformofatubeconsistingofaglasshousingmountedonaboardthedimensions
ofwhichdonotexceed350x300mmexcludingleads.Thetubecontainsoneormorerowsof
characters orlinesarranged inrows,eachcharacter orlineconsisting offluorescent or
phosphorescent elements .Theseelementsaremountedonametallized basewhichiscovered
withfluorescent substances orphosphorescent saltswhichgiveofflightwhenbombarded with
electrons 0
ex85.21C Quartzcrystaloscillating atafrequencyof4194304Hz,contained inahousing,forthe
manufacture ofproductsfallingwithinChapter91(a) 0
ex85.21C Quartzcrystaloscillating atafrequencyof32768Hz,contained inacylindrical housingofa
lengthnotexceeding 8,2mmandadiameternotexceeding3,2mm,forthemanufacture of
productsfallingwithinChapter91(a) 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL346/14 OfficialJournaloftheEuropean Communities 23.12.85
Rateof
autonomous
duty(%)CCT
headingNoDescription
ex85.21DII Digitaldisplaysofasizenotexceeding25x35mm,consistingofaprintedcircuitboardon
whicharemounted ,underaplasticcover,upto22light-emitting diodesmanufactured from
gallium-based semi-conductor compounds .Eachdisplayconsistsofasinglecharacterwithor
withoutaplusorminussignand/oroneortwodots 0
ex85.21DII Digitaldisplays,consistingofaprintedcircuitboardofasizenotexceeding35X90mmwitha
singlelineofcharacters ,notlessthantwoinnumber,comprising light-emitting diodesmade
fromgallium-based semi-conductor compounds mountedthereon .Eachcharacteriscomposed
ofuptoeightsegmentswithorwithoutadecimalpointandthelineofcharacters hasa
protective coverofplastic 0
ex85.21DII Monolithic integratedcircuits,consistingofeightindependent elementscapableofcontrolling
theeightsegmentsand/orcharacters offluorescent orgasdischargedisplays,contained ina
housingtheexteriordimensions ofwhichdonotexceed7x23mm,withnotmorethan
18connecting pinsandbearings :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures :
513
514
534
594
6118
6128
6138
or
—otheridentification markingsrelatingtocircuitscomplying withtheabovementioned
description 0
ex85.21DII Read-only memories (ROMs),intheformofamonolithic integrated circuit,withastorage
capacityof16Kx8bits,withread-register andserialoutputcontrol,contained inahousing
theexteriordimensions ofwhichdonotexceed50x16mm,withnotmorethan40connecting
pinsandbearing :
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
orincludingoneofthosecombinations :
from62000to62999
or
—otheridentification markingsrelatingtoROMscomplying withtheabovementioned
description " 0
ex85.21DII Read-onlymemoryinC-MOStechnology (C-MOSROM)withastoragecapacityof256Kbits
andastandbycurrentofnotmorethan0,03mA,intheformofamonolithic integratedcircuit
contained inahousingtheexteriordimensions ofwhichdonotexceed17x50mm,withnot
morethan54connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
HN61256
HN613256
MB83256
or
—otheridentification markings relatingtoC-MOSROMscomplying withthe
abovementioned description 8,5
ex85.21DII Read-onlymemoryofC-MOStechnology (C-MOSROM)withastoragecapacityof1megabit
intheformofamonolithic integratedcircuitcontained inahousingtheexteriordimensions of
whichdonotexceed17x39mm,withnotmorethan28connecting pinsandbearing :

23.12.85 OfficialJournaloftheEuropean Communities NoL346/15
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd.)anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
HN62301P,
MB831124 ,
TC531000 P
or
otheridentification markings relatingtoC-MOSROMscomplying withthe
abovementioned description 8,5
ex85.21DII Programmable ,non-erasable ,read-onlymemories (PROMs )ofSchottkyTTLtechnology ,
withastoragecapacityof2Kbits,intheformofamonolithic integratedcircuit,contained ina
housingtheexteriordimensions ofwhichdonotexceed17x39mm,withnotmorethan
24connecting pinsorcontactareas,andbearing :
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
orfiguresandlettersorincludingoneofthosecombinations :
27S12 5305 6305 76LS03
27S13 5306 6306 7620
5308 6308 7621
28L22 5309 6309
28LA22 53S240 63S240 82S114
28L2XMFC 53S241 63S241 82S130
6335 82S131
29613 54S570 6336
29770 54S571 93436
29771 7053 93446
5604 7058
38510 5624 MB7115
74S570 MB7116
74S571 MB7117
MB7118
or
—otheridentification markingsrelatingtoPROMscomplying withtheabovementioned
description 11,5
ex85.21DII Programmable ,non-erasable ,read-onlymemories (PROMs )withastoragecapacityof4Kbits,
intheformofamonolithic integratedcircuit,contained inahousingtheexteriordimensions o,f
whichdonotexceed17x39mm,withnotmorethan24connecting pinsor28contactareas
andbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:
18S42 29620 54S472 74S472
18S46 29621 54S473 74S473
18SA42 29622 54S474 74S474
18SA46 29623 54S475 74S475
29624 54S476 74S476
24S41 29625 54S477 74S477
24SA41 29626 54S572 74S572
29627 54S573 74S573
27S15 54740
27S25 3604 54741 7640
27S26 3624 7641
27S27 3625 5605 7642
27S28 5625 7643
27S29 38510 7644
27S30 6340 7645
27S31 5340 6341 7646
27S32 5341 63S440 7647
27S33 53S440 63RA4417648
53RA44163RS4417649

NoL346/16 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoDescription .Rateof
autonomous
duty(%)
ex85.21DII
(cont'd)28L42
28L45
28L46
28P42
28P45
28R45
28S4XFD
28SA41
28S42
28SA42
28S45
28S46
28SA4653RS44163S441,
53S441 6348
5348 6349
5349 6350
5350 6351
5351 6352
5352 6353
5353
HM6641
7054
7059
7121
7122
7123
7124
7125
7126
722682HS137
82HS147
82S115
82S136
82S137
82S140
82S141
82S142
82S146
82S147
93438
93448
93452
93453
or
—otheridentification markingsrelatingtoPROMscomplying withtheabovementioned
description 0
ex85.21DII Programmable ,non-erasable read-onlymemories (PROMs )withastoragecapacityof8Kbits,
intheformofamonolithic integrated circuit,contained inahousingtheexteriordimensions of
whichdonotexceed17x39mm,withnotmorethan24connecting pinsand28contact
pointsandbearing :
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
andlettersorincludingoneofthosecombinations :
24S81
24SA81
24S86
27S180
27S181
27S185
27S35
28L85
28L86
28P85
28R35
28R85
28S2708
28S85
28S86
28SA86
28S8XMFE
29623
29630
29631
29632
29633
29634
29635
29636
29637
29650
29651
29652
296533628 74LS478
74S2708
5380 74S454
5381 74S455
5388 74S478
5389 74S479
53S840
53S841 7608
7680
54LS4787681
54S2708 7684
54S454 7685
54S455 7686
54S478 7687
54S479 7688
7689
6380
6381 77S180
6388 77S181
6389 77S184
63S840 77S185
63S841 77S186
77S187
7050
7055 TBPS81M
7060
7127
7128
7129
7130
7131
7132
723282707
82708
82HS185
82LS180
82LS181
82S180
82S181
82S182
82S183
82S184
82S185
82S2708
87S180
87S181
87S184
87S185
87S186
87S187
93450
93451
93460
93461
93465
93466
93L450
93L451
9460

23.12.85 OfficialJournaloftheEuropeanCommunities NoL346/17
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)or
—otheridentification markingsrelatingtoPROMscomplying withtheabovementioned
description 0
ex85.21DII UV-erasable ,programmable ,read-onlymemories (EPROMs )withastoragecapacityof2K
bits,intheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed17X39mm,withaquartzwindowontheuppersurface
andbearing :
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
orincludingoneoffollowingcombinations :
AMI702ADC
82140PP
or
—otheridentification markingsrelatingtoEPROMscomplying withtheabovementioned
description 5
ex85.21DII UV-erasable ,programmable ,read-onlymemory (EPROM )equippedwithaprogrammable
input/outputsystem,withastoragecapacityof2Kx8bits,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
15x52mm,withaquartzwindowontheupperfaceandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
D8755A
TMP8755AC
or
—otheridentification markingrelatingtomemories complying withtheabovementioned
description 0
ex85.21DII Electrically erasable,programmable ,read-onlymemories (E2PROMs )withastoragecapacity
of256bits,intheformofamonolithic integratedcircuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed10x12mm,withnotmorethaneightconnecting pinsand
bearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
NMC9306
or
—otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description 0
ex85.21DII Electrically erasableprogrammable ,read-onlymemories (E2PROMs )withastoragecapacity
of4Kbits,intheformofamonolithic integratedcircuit,containedinahousingtheexterior
dimensions ofwhichdonotexceed17x33mm,withnotmorethan24connecting pinsand
bearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
X2804AX2404 X24C04
or
—otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description 0
ex85.21DII Electrically erasable,programmable ,read-onlymemories (E2PROMs )withastoragecapacity
of16Kbits,intheformofamonolithic integratedcircuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed17x33mm,withnotmorethan24connecting pinsand
bearing :

NoL346/18 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters:
X24C16
X2816A
52B13
52B13H
or
otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description 0
ex85.21DII Electrically erasable ,programmable ,read-onlymemories (E2PROMs )withastoragecapacity
of64Kbits,intheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed17x39mm,withnotmorethan28connccting pinsand
bearing:
—anidentification markingconsisting oforincludingoneofthefollowingcombination of
figuresandletters:
X2864A
MCM2864
52B33
52B33H
or
—otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description 0
ex85.21DII Electrically erasable,programmable ,read-onlymemories (E2PROMs )withastoragecapacity
of128Kbits,intheformofamonolithic integratedcircuit,containedinahousingtheexterior
dimensions ofwhichdonotexceed17x39mm,withnotmorethan28connecting pinsand
bearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
X28128A
or
—otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description 0
ex85.21DII Electrically erasable,programmable ,read-onlymemories (E2PROMs )withastoragecapacity
of256Kbits,intheformofamonolithic integratedcircuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed17x39mm,withnotmorethan28connecting pinsand
bearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters :
X28256A
or
—otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description 0
ex85.21DII Static,random-access memoriesofTTLtechnology (TTLS-RAMs )withastoragecapacityof
1Kbit,intheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed16x30mm,withnotmorethan22connecting pinsand
bearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:

NoL346/19 23.12.85 OfficialJournaloftheEuropean Communities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)2205 74LS21493412
74LS21593L412
.2510 74LS31493415
2511 74LS31593L415
74S207 93422
74S208 93L422
74S214 93425
74S314 93F425
93L425
or
otheridentification markingsrelatingtoTTLS-RAMscomplying withtheabovementioned
description 0
ex85.21DII Static,random-access memoriesofN-MOS (includingH-MOS )technology (N-MOS-S-RAMs )
withastoragecapacityof1Kx4bitsandaccesstimenotexceeding70ns,intheformofa
monolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed8x23mm,withnotmorethan18connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
AM2149
PD2149
SY2149H
TMS2149
or
—otheridentification markings relatingtoN-MOSS-RAMscomplying withthe
abovementioned description 8,5
ex85.21DII Static,random-access memoriesofC-MOStechnology (C-MOSS-RAMs),withastorage
capacityof4Kx1bit,amaximum accesstimenotexceeding70nsandastandbymodesupply
currentoflessthan1mA,intheformofamonolithic integratedcircuit,contained inahousing
thedimensions ofwhichdonotexceed9x26mm,with18connecting pins,andbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
6147
MCM61L47
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Static,random-access memoryofC-MOStechnology (C-MOSS-RAM)withastoragecapacity
of2Kx8bitsandwithamaximumstandbypowerof0,025milliwattsat25°Cintheformofa
monolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed17x33mmwithnotmorethan24connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters:
TC5516A
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Static,random-access memoriesofN-MOS (includingH-MOS )technology (N-MOSS-RAMs )
withastoragecapacityof8Kbits,intheformofamonolithic integratedcircuit,containedina
housingtheexteriordimensions ofwhichdonotexceed17x39mm,withnotmorethan
24connecting pinsandbearing :

NoL346/20 OfficialJournaloftheEuropean Communities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:
4008 8104
8108
4118 8112
8114
PD421 8185
4801
or
otheridentification relatingtoN-MOSS-RAMscomplying withtheabovementioned
description 0
ex85.21DII Static,random-access memories ofN-MOS (including H-MOS )technology (N-MOS
S-RAMs),intheformofamonolithic integrated circuitconsistingoftwostackedsubstrate
layerseachwithtwochips,eachhavingastoragecapacityof2Kbitsandwithatotalstorage
capacityof8Kx1bitor4Kx2bits,contained inahousingtheexteriordimensions ofwhich
donotexceed13x13mm,withnotmorethan23connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures :
4598601
5121850
5121934
5121935
5122148
5123059
5123120
5123128
5123129
5123337
5123339
or
—otheridentification markings relatingtoN-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Static,random-access memoriesofN-MOS (includingH-MOS )technology (N-MOSS-RAMs )
withastoragecapacityof256x4bits,intheformofamonolithic integratedcircuit,contained
inahousingtheexteriordimensions ofwhichdonotexceed17x39mm,withnotmorethan
24connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:
M120 8101
8111
2101
21H01 9101
2102 91L01
2111 9111
21H11 91L11
2112 9112
21H12 91L12
9122
91L22
or
otheridentification markings relatingtoN-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Static,random-access memoriesofC-MOStechnology (C-MOSS-RAMs )withastorage
capacityof64Kbitsintheformofamonolithic integratedcircuit,contained inahousingthe
exteriordimensions ofwhichdonotexceed18x39mm,withnotmorethan28connecting
pinsandbearing :

23.12.85 OfficialJournaloftheEuropean Communities NoL346/21
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingconsistingofthefollowingcombination offiguresandlettersor
includingoneofthosecombinations :
TC5564 MB8464
TC5565CMCM6164
HM6264P-12
HM6264P-156264LFP-15
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Monolithic integrated circuitconsistingofastatic,random-access memory (S-RAM )witha
storagecapacityof256bitssuperimposed bit-for-bitonaprogrammable ,electrically erasable,
read-onlymemory(E2PROM),contained inahousingtheexteriordimensions ofwhichdonot
exceed8x24mm,withnotmorethan18connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
X2210
X2443
X2444
or
—otheridentification markingsrelatingtoS-RAMssuperimposed ofE2PROMscomplying
withtheabovementioned description 0
ex85.21DII Monolithic integrated circuitconsisting ofastatic,random-access memory (S-RAM )witha
storagecapacityof1Kbit,superimposed bit-for-bitonanelectrically erasable ,programmable ,
read-onlymemory(E2PROM),contained inahousingtheexteriordimensions ofwhichdonot
exceed17x33mm,withnotmorethan24connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
X2001
X2201A
X2212
or
—otheridentification markingsrelatingtoS-RAMsstackedonE2PROMscomplying withthe
abovementioned description 0
ex85.21DII Monolithic integrated circuitconsisting ofastatic,random-access memory (S-RAM)witha
storagecapacityof2Kbit,superimposed bit-for-bitonanelectrically erasable,programmable ,
read-onlymemory(E2PROM),contained inahousingtheexteriordimensions ofwhichdonot
exceed17x39mm,withnotmorethan28connecting pinsandbearing :
—anidentification markingconsistingofthefollowingcombination offiguresandletter:
X2002
or
—otheridentification markingsrelatingtoS-RAMsstackedonE2PROMscomplying withthe
abovementioned description 0
ex85.21DII Monolithic integrated circuitconsistingofastatic,random-access memory (S-RAM)witha
storagecapacityof4Kbits,superimposed bit-for-bit onanelectrically erasable,
programmable ,read-onlymemory(E2PROM),contained inahousingtheexteriordimensions
ofwhichdonotexceed17x39mm,withnotmorethan28connecting pinsandbearing :

NoL346/22 OfficialJournaloftheEuropeanCommunities 23.12.85
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headingNoDescription
ex85.21DII
(cont'd)anidentification markingconsistingofthefollowingcombination offiguresandletter:
X2004
or
otheridentification markingsrelatingtoSRAMsstackedonE2PROMscomplying withthe
abovementioned description 0
ex85.21DII 'Quasi-static 'random-access memoriesofN-MOS (includingH-MOS )technology (N-MOS
quasi-static RAMs),intheformofamonolithic integratedcircuitconsistingoftwostacked
substratelayers,eachwithtwochips,eachhavingastoragecapacityof4Kbitsandwithatotal
storagecapacityof16Kx1bitor8Kx2bits,containedinahousingtheexteriordimensions
ofwhichdonotexceed13x13mm,withnotmorethan24connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
4599766 4599769 4599772 4599893
4599767 4599770 4599773
4599768 4599771 4599774
or
otheridentification markingsrelatingtoN-MOSquasi-static RAMscomplying withthe
abovementioned description 0
ex85.21DII Random-access memoriesofECLtechnology (ECL-RAMs )withastoragecapacityof1Kx4
bits,intheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed10x10mm,withnotmorethan24connecting pinsand
bearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombinations of
figuresorfiguresandletters:
PB10474
100474
or
otheridentification markingsrelatingtoECL-RAMs complying withtheabovementioned
description 0
ex85.21DII Fieldprogrammable arraylogics(PALs)ofbipolartechnology ,intheformofamonolithic
integrated circuit,withfusiblelinks,aprogrammable ANDarray,fixedORarray,notmore
than20inputsandnotmorethan10outputs,whetherornotwithregisters,contained ina
housingtheexteriordimensions ofwhichdonotexceed19x39mm,withnotmorethan28
connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombinations of
figuresandletters:
10H8 16A4 18L4
10L8 16C1
16H2 20C1
12H6 16L2 20L2
12L6 16L6 20L10
20R4
12L10 16L8 20X4
16R4 20X8
14H4 16R6 20X10
14L4 16R8
14L8 16X4
or
otheridentification markingsrelatingtoPALscomplying withtheabovementioned
description 5

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headingNoDescription
ex85.21DII Programmable ,non-erasable ,logiccircuits(fieldprogrammable logicarray)ofTTLSchottky
technology ,withnotmorethan48ANDfunctions ,notmorethaneightORfunctions ,andnot
morethan16inputs,intheformofamonolithic integratedcircuit,containedinahousingthe
exteriordimensions ofwhichdonotexceed17x39mm,withnotmorethan28connecting
pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:
FP54AS839FP74AS83982S100
FP54AS840FP74AS84082S101
SN54LS333SN74LS333
SN54LS334SN74LS33493458
SN54LS335SN74LS33593459
SN54LS336SN74LS336
or
—otheridentification markingsrelatingtoprogrammable fieldlogicarrayscomplying with
theabovementioned description 5
ex85.21DII Semi-custom logicarray(Gatearrays)ofC-MOStechnology ,intheformofamonolithic
integratedcircuit,withnotlessthan80002-inputNANDfunctions ,contained inahousingthe
exteriordimensions ofwhichdonotexceed39x39mm,withnotlessthan179connecting
pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
MB66000VH
or
—otheridentification markings relatingtoC-MOSlogicarrayscomplying withthe
abovementioned description 0
ex85.21DII Single-chip microcomputers ,intheformofamonolithic integrated circuit,consistingofan
arithmetical unitwithacapacityoffourbitsplusaread-onlymemory (ROM)withacapacityof
notlessthan18Kbitsandnotmorethan65Kbitsandarandom-access memory (RAM)witha
capacityofnotlessthan512bitsandnotmorethan4Kbits,contained inahousingtheexterior
dimensions ofwhichdonotexceed17x58mm,withnotmorethan80connecting pinsand
bearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
CD3200-3299 TP0310-03299 HD38800
TP0450-04599 HD38820
TMC0270-0279 TP0480-04899 HD44796
TMC0500-0599 TP0500-05999 HD44800
TMC0980-0989 HD44801
TMC1500-1599 HD44820
TMC1980-1999 HD44840
HD44860
or
otheridentification markingsrelatingtosingle-chip microcomputers complying withthe
abovementioned description 0
ex85.21DII Centralprocessing unitofN-MOS (includingH-MOS )technology (N-MOSCPU),intheform
ofamonolithic integrated circuitconsistingofa16x16bitservicememory,a16x20bit
servicememory ,a32X32bitservicememory ,an8x8bitservicememory ,a16bitregister,
two20bitregisters ,an8bitregister,one12bitregister,a5bitcounterandtimingnetwork,
contained inahousingtheexteriordimensions ofwhichdonotexceed25x25mm,withnot
morethan68connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
LSI-604041855

NoL346/24 OfficialJournaloftheEuropean Communities 23.12.85
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headingNoDescriptionRateof
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duty(%)
or ex85.21DII
(cont'd) otheridentification markingsrelatingtoN-MOScentralprocessing unitscomplying with
theabovementioned description 0
ex85.21DII Contention resolvinglocalareanetwork (LAN)controllers ,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
63x16mm,withnotmorethan48connecting pins,andbearing :
—anidentification markingeitherconsisting ofthefollowingcombinations offiguresor
figuresandlettersorincludingoneofthosecombinations :
MCM68590
AM7990
8001
8003
82586
or
—otheridentification markingsrelatingtocontention resolvinglocalareanetworkcontrollers
complying withtheabovementioned description 0
ex85.21DII Hard-disccontrollers ofN-MOS (includingH-MOS )technology (N-MOSHDCs),intheform
ofamonolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdo
notexceed15x53mm,withnotmorethan40connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
WD1010
PD7261
or
—otheridentification markings relatingtoN-MOSHDCscomplying withthe
abovementioned description 0
ex85.21DII Multi-protocol communication controller ofMOStechnology (MOS-MPCC )forthe
transmission andreceivingofdataspecialized inthesynchronous mode,intheformofa
monolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed16x54mm,withnotmorethan44connecting pinsorcontactareasandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
2652
16456
68652
8273
8274
or
—otheridentification markings relatingtomulti-protocol communication controllers
(MOS-MPCC )complying withtheabovementioned description 0
ex85.21DII Arithmetic-logic unitsofN-MOS (includingH-MOS )technology ,intheformofamonolithic
integratedcircuit,consistingofone32bitregister,one24bitregister,one4bitregister,twelve
1bitregisters ,two16x24bitservicememories ,onelogicnetworkperforming arithmeticand
logicoperations ,decodifying logic,anerrordetectionandmanagement logic,one8bitcounter
andatimingnetwork ,contained inahousingtheexteriordimensions ofwhichdonotexceed
23x82mm,withnotmorethan64connecting pinsandbearing:
—theidentification marking :
ALU0486

23.12.85 OfficialJournaloftheEuropean Communities NoL346/25
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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)or
otheridentification markings relatingtoarithmetic-logic unitscomplying withthe
abovementioned description3
ex85.21DII LogiccontrolcircuitsofN-MOS (includingH-MOS )technology ,intheformofamonolithic
integratedcircuit,consistingofone7bitregister,threetimers,onemultiplexer sequentialand
combining networksintendedtoperformcontroloperations ,decodifying logic,errordetection
andmanagement logicandatimingnetwork ,containedinahousingtheexteriordimensions of
whichdonotexceed23x82mm,withnotmorethan64connecting pinsandbearing :
—theidentification marking :
MIC0482
or
—otheridentification markings relatingtologiccontrolcircuitscomplying withthe
abovementioned description 0
ex85.21DII LogiccircuitofN-MOS (includingH-MOS )technology (N-MOSLC)servingasaclock
generatorforcentralprocessunit,mainmemoryandinput/outputinterfaces ,intheformofa
monolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed25x25mm,withnotmorethan68connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
H108982 (MCC)
or
—otheridentification markingsrelatingtoN-MOSlogiccircuits (N-MOSLCs)complying
withtheabovementioned description 0
ex85.21DII SequencecontrolcircuitsofN-MOS (includingH-MOS )technology ,intheformofa
monolithic integrated circuit,consisting ofone32bitregister,three16bitregisters,one
16x16bitservicememory ,one7x17bitlast-infirst-out (LIFO)memory,oneaddercircuit,
decodifying logic,prioritylogic,errordetectionandmanagement logic,one16bitmultiplexer ,
one8bitcounterandatimingnetwork ,contained inahousingtheexteriordimensions ofwhich
donotexceed23x82mm,withnotmorethan64connecting pinsandbearing :
—theidentification marking :
CSS0484
or
—otheridentification markingsrelatingtosequencecontrolcircuitscomplying withthe
abovementioned description 0
ex85.21DII Errorcorrection anddetectionunit(ECDU)ofbipolartechnology ,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
16x62mm,withnotmorethan48connecting pinsandbearing:
—anidentification markingeitherconsisting oforincludingthefollowingcombinations of
figuresandletters:
2960
74F630
74F631
DP8400
74LS630
74LS631

NoL346/26 OfficialJournaloftheEuropeanCommunities 23.12.85
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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)or
otheridentification markingsrelatingtoerrorcorrection anddetectionunits(ECDUs )
complying withtheabovementioned description 0
ex85.21DII Errordetectionandcorrection circuitofN-MOS (includingH-MOS )technology capableof
detectingandcorrecting singlebiterrorsanddetectingalldoublebiterrors,intheformofa
monolithic integratedcircuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed25x25mm,withnotmorethan68contactareasandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figures:
8206
or
—otheridentification markingsrelatingtoN-MOSerrordetectionandcorrection circuits
complying withtheabovementioned description 0
ex85.21DII Bursterrorprocessor (BEP)orN-MOS (includingH-MOS )technology fordetectingand
correcting multipleerrorsderivedfromalineofmagneticdiscs,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
16x54mm,withnotmorethan40connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
Z8065
AM9520
AM9521
or
—anyotheridentification markingrelatingtoN-MOSbursterrorprocessorcomplying with
theabovementioned descriptionn
ex85.21DII Electroniccontrolcircuitofbipolartechnology intheformofamonolithic integratedcircuitfor
thecontrolofdynamicrandom-access memories (D-RAMs),capableofmultiplexing address
andgenerating timing,contained inahousingtheexteriordimensions ,ofwhichdonotexceed
17x62mm,withnotmorethan48connecting pinsandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
DP8408
DP8409
MB1422
or
—otheridentification markingsrelatingtoelectronic controlcircuitscomplying withthe
abovementioned description 0
ex85.21DII N-MOS (includingH-MOS )programmable communication interfaces (N-MOSPCIs),inthe
formofamonolithic integrated circuit,contained inahousingtheexteriordimensions ofwhich
donotexceed17x39mm,withnotmorethan28connecting pinsandbearing:
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletter:
8251A
or
—otheridentification markingsrelatingtoN-MOSPCIscomplying withtheabovementioned
description 8,5
ex85.21DII Enhanced programmable communications interface (EPCI),intheformofamonolithic
integrated circuit,contained inahousingtheexternaldimensions ofwhichdonotexceed
16x38mm,withnotmorethan28connecting pinsandbearing:

23.12.85 OfficialJournaloftheEuropean Communities NoL346/27
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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)anidentification markingeitherconsistingoforincludingthefollowingcombination of
figures:
2661
or
otheridentification markingsrelatingtoEPCIscomplying with,theabovementioned
description 0
ex85.21DII Serialinterfaces ,capableofimplementing thedatastreamencoding ,decodingandassociated
controlfunctions foralocalareanetwork ,intheformofamonolithic integrated circuit,
contained inahousingtheexteriordimensions ofwhichdonotexceed16x33mm,withnot
morethan24connecting pinsandbearing :
—anidentification markingeitherconsistingofthefollowingcombination offiguresorfigures
andlettersoroneofthosecombinations :
AM7991
8002
8023
82501
or
—otheridentification markings relatingtoserialinterfacedevicescomplying withthe
abovementioned description 0
ex85.21DII Stationdigitalinterfacecircuitforparallel/serialorserial/parallelconversion ofdigitalsignals
intelephonesets,ofC-MOStechnology (C-MOSSTID),intheformofamonolithic integrated
circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed17x39mm,
withnotmorethan28connecting pins,andbearing:
—anidentification markingconsisting oforincludingthefollowingcombination offigures
andletters :
WCC295G
or
—otheridentification markingsreferringtostationinterfacedigitalcircuitscomplying with
theabovementioned description 0
ex85.21DII N-MOS (includingH-MOS )programmable intervaltimers(N-MOSPITs),intheformofa
monolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed17x39mm,withnotmorethan24connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
8253 8254
or
—otheridentification markingsrelatingtoN-MOSPITscomplying withtheabovementioned
description 6
ex85.21DII Demodulator /tonedecoderofbipolartechnology forfrequencydecoding ,intheformofa
monolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed10x21mm,withnotmorethan14connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
XR2211
or
—otheridentification markingsrelatingtodemodulator tonedecoderscomplying withthe
abovementioned description 0

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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII C-MOSclockcircuits,intheformofamonolithic integratedcircuit,contained inahousingthe
exteriordimensions ofwhichdonotexceed16x54mm,withmorethan16connecting pins,
andbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
HI2060
HI2065
MSM5537
T3605
or
—otheridentification markingsrelatingtoclockcircuitscomplying withtheabovementioned
description
fortheproduction ofautomatictime-switches ,instrument panelclocksandclocksofasimilar
typeformotorvehicles (a) 0
ex85.21DII C-MOSclockcircuits,operatingfromasingle1,5Vpowersupply,withaliquidcrystaldisplay
(LCD)driver,intheformofamonolithic integratedcircuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed15x21mm,withnotmorethan56connecting pinsand
bearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
TC8219AF
or
—otheridentification markings relatingtoC-MOSclockcircuitscomplying withthe
abovementioned description 0
ex85.21DII P-MOS12/24-hourclockcircuits,incorporating anelapsedtimefacility,intheformofa
monolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed54x14mm,withnotmorethan42connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingoneofthefollowingcombination
offiguresandletters:
MM53124
LM8363
or
—otheridentification markingsrelatingtoclockcircuitscomplying withtheabovementioned
description 0
ex85.21DII Amplifier ,intheformofamonolithic integratedanaloguecircuit,contained inahousingthe
dimensions ofwhichdonotexceed2x4x4mm,withnotmorethan10connecting pinsand
bearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
V35
C05
or
—otheridentification markingsrelatingtoamplifiers complying withtheabovementioned
description
Thisamplifier isforthemanufacture ofproductsfallingwithinsubheading 90.19BI(a) 0
ex85.21DII Transceivers withfourchannels (Quadbus)ofALPSchottkytechnology withon-chipDtype
registersandinternalODD4bitparitygenerator/checker,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
9x28mm,withnotmorethan20connecting pinsandbearing :
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

23.12.85 OfficialJournaloftheEuropean Communities NoL346/29
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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
AM2907
or
otheridentification markingsrelatingtotransceivers (Quadbus)complying withthe
abovementioned description 0
ex85.21DII Four-linedriversofadvanced ,low-power Schottkytechnology ,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
20x7mm,withnotmorethan16connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
•AM26LS29
AM26LS31
SN75172
SN75174
or
—otheridentification markingsrelatingtofour-linedriversofALPStechnology complying
withtheabovementioned description 0
ex85.21DII Universal Synchronous /Asynchronous Receiver/Transmitter (USART)ofC-MOS
technology ,intheformofamonolithic integrated circuitcontained inahousingtheexterior
dimensions ofwhichdonotexceed17x39mm,withnotmorethan32connecting pinsand
bearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
MSM82C51
or
—otheridentification markings relatingtoUniversal Synchronous /Asynchronous
Receiver/Transmitters complying withtheabovementioned description 8,5
ex85.21DII 8bitmicroprocessor ofN-MOS (including H-MOS )technology with16bitinternal
architecture ,intheformofamonolithic integratedcircuitconsistingofacentralprocessing unit
(CPU),atiminggenerator ,twoindependent DMAchannels ,aprogrammable interrupt
controller ,threeprogrammable 16bittimers,programmable memoryandperipheral chip
select,aprogrammable waitstategeneratorandalocalbuscontroller ,contained inahousing
thedimensions ofwhichdonotexceed30x30mmwithnotmorethan68contactareas,and
bearing :
—anidentification markingconsisting oforincluding thefollowing combination of
figures:
80188
or
—otheridentification markings relatingtomicroprocessors complying withthe
abovementioned description 8,5
ex85.21DII 16bitmicroprocessor ofbipolartechnology ,intheformofamonolithic integrated circuit,
contained inahousingtheexteriordimensions ofwhichdonotexceed67x24mm,withnot
morethan52connecting pinsandbearing :
—anidentification markingconsisting oforincludingthefollowingcombination offigures
andletters:
AM29116
or
—otheridentification markings relatingtomicroprocessors complying withthe
abovementioned description 0

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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII 16bitmicroprocessor inN-MOS (includingH-MOS )technology ,intheformofamonolithic
integrated circuit,consisting ofacentralprocessing unit(CPU),atiminggenerator ,two
independent DMAchannels,aprogrammable interruptcontroller ,threeprogrammable 16bit
timers,programmable memoryandexternalchipselectionlogic,aprogrammable waitstate
generatorwithbuscontrolunit,containedinahousingtheexteriordimensions ofwhichdonot
exceed30x30mm,withnotmorethan68connecting pinsandbearing :
—anidentification markingconsisting oforincluding thefollowing combination of
figures:
80186
or
—otheridentification markingsrelationstomicroprocessors complying withtheabove
description 8,5
ex85.21DII NumericprocessorextensionunitofN-MOS (includingH-MOS )technology (N-MOSNPX)
containing notmorethan14registers,intheformofamonolithic integratedcircuit,contained
inapackagetheexteriordimensions ofwhichdonotexceed15x52mm,withnotmorethan
40connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figures :
8087-3
8087-2
80287
or
—otheridentification markings ,relatingtoN-MOSNPXscomplying withthe
abovementioned description 0
ex85.21DII Floppy-disc dataseparator (FDDS),intheformofamonolithic integratedcircuit,containedin
ahousingtheexteriordimensions ofwhichdonotexceed27x8mm,withnotmorethan20
connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
FDC9216
FDC9126-B
WD9216-00
WD9216-01
FDC9229T
FDC9229BT
or
—otheridentification markingsrelatingtoFDDS,complying withtheabovementioned
description 0
ex85.21DII C-MOS-phoneme speechsynthesizer ,withasupplycurrentoflessthan10mA,intheformofa
monolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed17x39mm,withnotmorethan24connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
SC01
SSI263
or
—otheridentification markingsrelatingtophonemespeechsynthesizers complying withthe
abovementioned description 0
ex85.21DII Triplevideodigitaltoanalogueconverter (VDAC),eachchannelhavingacapacityofnotmore
than8bitswithamaximum conversion timeofnotmorethan25nanoseconds ,intheformofa
hybridintegrated circuitwhetherornotincorporating threerandomaccessmemories (RAMs)
eachwithastoragecapacityofnotmorethan2Kbits,contained inahousingtheexterior
dimensions ofwhichdonotexceed54x62mm,withnotmorethan61connecting pinsand
bearing :

23.12.85 OfficialJournaloftheEuropeanCommunities NoL346/31
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headingNoDescriptionRateof
autonomous
duty(%■)
ex85.21DII
(cont'd)•anidentification markingconsistingofoneofthefollowingcombinations oflettersand
figures:
VDAC444TD
RGBDAC4T
RGBDAC8E
RGBDAC8T
or
otheridentification markingsrelatingtotripleVDACscomplying withtheabovementioned
description 0
ex85.21DII Electronically adjustabledifferential amplifiersforatleastthefullrangeofsignalsfrom0tonot
lessthan400MHzintheformofamonolithic integratedcircuit,contained inahousingthe
exteriordimensions ofwhichdonotexceed11x11mm,withnotmorethan16connecting
pins,andbearing :
—anidentification markingconsisting oforcontaining thefollowing combination of
figures:
0078-10
or
—otheridentification markingsrelatingtoamplifierscomplying withtheabovementioned
description 0
ex85.21DII Static,random-access memoriesofbipolartechnology (bipolarSRAMs),intheformofa
monolithic integratedcircuitandwithastoragecapacityof64x9bits,containedinahousing
theexteriordimensions ofwhichdonotexceed15x40mm,withnotmorethan
28connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
82S09
or
—otheridentification markings relatingtobipolarSRAMscomplying withthe
abovementioned description 0
ex85.21DII 8bit(octal)dynamicmemorybipolardriverintheformofamonolithic integratedcircuit
contained inahousingtheexteriordimensions ofwhichdonotexceed16x33mm,withnot
morethan20connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters:
AM2965
AM2966
or
—otheridentification markingsrelatingtodynamicmemorybipolardriverscomplyingwith
theabovedescription 0
ex85.21DII Businterfacecircuitsofbipolartechnology with9or10bitregisters,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
9x34mm,withnotmorethan24connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
numbers andletters:
AM29821 AM29843
AM29823 AM29844
AM29824
or
—otheridentification markingsrelatingtoBUSinterfacecircuitswhichcomplywiththeabove
description 0

NoL346/32 OfficialJournaloftheEuropean Communities 23.12.85
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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Multiplebusinterfacecircuit(MultipleBusBuffer)oflowpowerSchottkytechnology for
interfacing theerrorcorrection anddetectionunitsystemdatabusanddynamicrandomaccess
memory (D-RAM),intheformofamonolithic integrated circuitcontained inahousingthe
exteriordimensions ofwhichdonotexceed8x33mm,withnotmorethan24connecting pins
andbearing :
—anidentification markingconsistingoforincludingthefollowingcombination ofnumbers
andletters:
AM2961
or
—otheridentification markingsrelatingtoerrorcorrection multiplebusbufferswhichcomply
withtheabovedescription 0
ex85.21DII Statusandshiftcontrolunitofbipolartechnology intheformofamonolithic integratedcircuit,
contained inahousingtheexteriordimensions ofwhichdonotexceed16x57mmwithnot
morethan42connecting pins,andbearing:
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
AM2904
or
—otheridentification markingsrelatingtostatusandshiftcontrolunitscomplying withthe
abovedescription 0
ex85.21DII Amplifier ,intheformofamonolithic integratedanalogcircuittheexteriordimensions ofwhich
donotexceed3x3mmforuseinthemanufacture ofproductsfallingwithinsubheading
90.19BI(a) 0
ex85.21DII Text-co-processor ,intheformofamonolithic integrated circuit,contained inahousingthe
exteriordimensions ofwhichdonotexceed25x25mm,withnotmorethan68connecting
pins,andbearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
C82730
or
—otheridentification markingsrelatingtotext-co-processors complying withtheabove
description 0
ex85.21DII Single-chip-microcomputer ,intheformofamonolithic integrated circuit,consistingofan
arithmetic-logic unitwithacapacityof8bitsplusanelectronic ,programmable ,read-only
memory (EPROM )UVerasablewithacapacityof32Kbitsandarandomaccessmemory
(RAM)withacapacityof1Kbit,two16bitcounters ,contained inahousingtheexterior
dimensions ofwhichdonotexceed15x50mm,withaquartzwindowandnotmorethan
40connecting pinsandbearing :
—anidentification markingeitherconsisting ofthefollowingcombination offiguresor
including thiscombination :
8751
or
—otheridentification markingsrelatingtosingle-chip-microcomputers whichconformtothe
foregoingdescription 0
ex85.21DII Single-chip microcomputers inC-MOStechnology ,intheformofamonolithic integrated
circuitconsistingofanALUwithacapacityof32bitsplusaROMwithacapacityof24Kbits
andaRAMwithacapacityof2Kbits,contained inahousingtheexteriordimensions ofwhich
arenotlessthan30x30mm,withaminimumof88connecting pinsandbearing :
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

23.12.85 OfficialJournaloftheEuropeanCommunities NoL346/33
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
MB8764
or
—otheridentification markingsrelatingtosingle-chip microcomputers complying withthe
abovementioned description 0
ex85.21DII Subscriber lineaudio-processing circuit (SLAC)withtwodigitalsignalprocessors ,an
analogue-digital converterandadigital-analogue converter ,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
17X39mmwithnotmorethan28connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
AM7901
AM7905
or
—otheridentification markingsrelatingtoSLACscomplying withtheabovementioned
description 8,5
ex85.21DII Monolithic integratedcircuitintheformofpulsecodemodulation (PCM)ofN-MOS (including
H-MOS )technology ,withencodingdecodingandfilterfunctionsandamaximumdataclock
frequencyofmorethan3,5MHz,contained inahousingtheexteriordimensions ofwhichdo
notexceed8x26mm,withnotmorethan20connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figures:
2913
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description 8,5
ex85.21DII Non-volatile memoryintheformofamonolithic integrated circuit,consistingofaC-MOS
S-RAM,withacapacityof16Kbitsandinternalpowersupply,contained inahousingthe
exteriordimensions ofwhichdonotexceed17x33mm,withnotmorethan28connecting
pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
MK48Z02(B)
or
—otheridentification markingsrelatingtonon-volatile memories complying withthe
abovementioned description 8,5
ex85.21DII Subscriber lineinterfacecircuit(SLIC)withdirectinternalrelaydrive,intheformofa
monolithic integratedcircuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed18x39mm,withnotmorethan28connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:
5502
ICME00155/RIFA(PBL)3735
or
—otheridentification markingsrelatingtoSLICscomplying withtheabovementioned
description 0

NoL346/34 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII InputoutputcircuitofN-MOS (includingH-MOS )technology fordatacontrolequippedwitha
timingcontrolwithastaticrandomaccessmemory (S-RAM)withacapacityof128X8bits,in
theformofamonolithic intergrated circuit,contained inahousingtheexteriordimensions of
whichdonotexceed16x54mm,withnotmorethan40connecting pinsandbearing:
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
orlettersandfiguresorincludingoneofthosecombinations :
6532
CO10750
or
—otheridentification markingsrelatingtoinputoutputcontrolcircuitscomplying withthe
abovementioned description 0
ex85.21DII 4-channeldrivecircuitforsteppingmotor,ofbipolartechnology ,withincorporated diodes,in
theformofamonolithic integratedcircuit,contained inahousingtheexteriordimensions of
whichdonotexceed6x20mm,with16connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
HA13007
75437A
or
—otheridentification markings relatingtomotordrivecircuitscomplying withthe
abovementioned description 0
ex85.21DII Analog/digitalmonolithic integrated circuitusedtocontrolbrushlessmotors,maintaining
themataconstantspeed,containedinahousingtheexteriordimensions ofwhichdonotexceed
6x25mm,with18connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
MGA3015A
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description 0
ex85.21DII Analog/digitalmonolithic integratedcircuitofbipolartechnology forinterfacesignalsbetween
theperipheral hard-disk memoryunitandthecentralunit,contained inahousingthe
dimensions ofwhichdonotexceed15x50mm,withnotmorethan40connecting pins,and
bearing :
—anidentification markingconsisting inorincludingthefollowingcombination offigures
andletters:
AD581C
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description 0
ex85.21DII Voltage-multiplier circuitforoperatingsteppingmotors,intheformofamonolithic integrated
circuitcontained inahousingtheexteriordimensions ofwhichdonotexceed6x24mm,with
notmorethan20connecting pins,andbearing:
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
P20A579
or
—otheridentification markingsrelatingtovoltage-multiplier circuitscomplying withthe
abovedescription 0

NoL346/35 23.12.85 OfficialJournaloftheEuropeanCommunities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Memorymanagement unitofN-MOS (includingH-MOS )technology (N-MOSMMU)witha
maximum addressing capacityof16Mbytes,intheformofamonolithic integrated circuit
contained inahousingtheexteriordimensions ofwhichdonotexceed25x82mm,withnot
morethan64connecting pinsor68contactareasandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
68451L6
68451L8
68451L10
68451ZBL6
68451ZBL8
68451ZBL10
or
—otheridentification markingsrelatingtoN-MOSMMUscomplying withtheabove
description 0
ex85.21DII Electronic circuitofadvancedlowpowerSchottky (ALPS)technology fortheasynchronous
controlofsignallines(bus)andtheconversion ofalocalbusintoamultiplexed bus(BAM)in
theformofamonolithic integratedcircuit,contained inahousingtheexteriordimensions of
whichdonotexceed37x13mm,withnotmorethan28connecting pinsandbearing :
—theidentification marking :
68452
or
—otheridentification markings relatingtoALPSBAMsconforming totheforegoing
description 0
ex85.21DII Cathode-ray tubecontroller (CRTC)ofN-MOS (includingH-MOS )technology intheformof
amonolithic integrated circuitcontained inahousingtheexteriordimensions ofwhichdonot
exceed62x16mm,withnotmorethan48connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
AM8052
D8275H
P8275H
or
—otheridentification markingsrelatingtoCRTCscomplying withtheabovementioned
description 0
ex85.21DII Displaycontrollerandcharactergenerator (DCCG)forliquidcrystaldotmatrixdisplaysystem
intheformofamonolithic integratedcircuitofC-MOStechnology containedinahousingthe
exteriordimensions ofwhichdonotexceed20x26mm,withnotmorethan60connecting
pins,andbearing :
—anidentification markingconsisting ofthefollowingcombination offiguresandletters:
HD61830
or
—otheridentification markingsrelatingtoC-MOSDisplayController andcharacter
generators complying withtheabovementioned descriptions 0
ex85.21DII Videodigitaltoanalogconverter (VDAC)withamaximum conversion timeof10
nanoseconds ,intheformofahybridintegrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed20x35mm,withnotmorethan24connecting pinsand
bearing :

NoL346/36 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters:
VDAC0405H
VDAC0605H
VDAC0805H
or
—otheridentification markingsrelatingtoVDACscomplying withtheabovementioned
description 0
ex85.21DII Input/outputmanagement microprocessor ofN-MOS (includingH-MOS )technology inthe
formofamonolithic integrated circuittheexteriordimensions ofwhichdonotexceed
17x53mm,withnotmorethan40connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
8089
or
—otheridentification markings relatingtoinput/outputmanagement microprocessors
complying withtheabovementioned description 0
ex85.21DII Interpolation pulsegeneratorofC-MOStechnology forcontrolling geometrical functions ,in
theformofamonolithic integrated circuit,contained inahousingtheexteriordimensions of
whichdonotexceed17x39mm,withnotmorethan28connecting pinsandbearing:
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
KM3701
or
—otheridentification markingsrelatingtointerpolation modulescomplying withthe
abovementioned description 0
ex85.21DII Static,randomaccessmemoryofC-MOStechnology (C-MOS-S-RAM )withastoragecapacity
of32Kbits,intheformofamonolithic integratedcircuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed18x39mm,withnotmorethan28connecting pinsand
bearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters :
TC5532
or
—otheridentifying markingrelatingtoC-MOS-S-RAM complying withtheabovementioned
description 0
ex85.21DII Controller forservo-devices ofC-MOStechnology intheformofamonolithic integratedcircuit
contained inahousingtheexteriordimensions ofwhichdonotexceed17x54mm,withnot
morethan40connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
KM3702
or
—otheridentification markingsrelatingtocontrollers complying withtheabovementioned
description 0
ex85.21DII Functiongeneratorofbipolartechnology forthegeneration ofvariablewaveforms ,intheform
ofamonolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdo
notexceed10x21mm,withnotmorethan16connecting pinsandbearing :

NoL346/37 23.12.85 OfficialJournaloftheEuropeanCommunities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
XR2206
XR8038
or
—otheridentification markings relatingtofunctiongenerators complying withthe
abovementioned description 0
ex85.21DII Videoamplifierofbipolartechnology intheformofamonolithic integratedcircuit,contained
inahousingtheexteriordimensions ofwhichdonotexceed17x17mm,withnotmorethan
44connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
702
703
or
—otheridentification markings relatingtovideoamplifiers complying withthe
abovementioned description
foruseinthemanufacture ofportablecolourtelevisioncameras (a) 0
ex85.21DII Amplifier ,ofbipolartechnology fortheamplification ofeitherreadorwritesignalsoffloppy
discs,intheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed11x29mm,withnotmorethan22connecting pinsand
bearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
XR2247
XR3470
or
—otheridentification markingsrelatingtoamplifiers complying withtheabovementioned
description 0
ex85.21DII Apertureandcolourtemperature balancecontrollerofbipolartechnology ,intheformofa
monolithic integrated analogcircuit,contained inahousingtheexteriordimensions ofwhich
.donotexceed17x17mm,withnotmorethan44connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figures:
704
or
—otheridentification markingsrelatingtodevicescomplying withtheabovementioned
description
foruseinthemanufacture ofportablecolourtelevisioncameras (a) 0
ex85.21DII ImpulsegeneratorinC-MOStechnology ,intheformofamonolithic integrated digitalcircuit,
contained inahousingtheexteriordimensions ofwhichdonotexceed25x25mm,withnot
morethan68connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figures:
705
706
or
—otheridentification markings relatingtoimpulsegenerators complying withthe
abovementioned description
foruseinthemanufacture ofportablecolourtelevisioncameras (a) 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL346/38 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Staticrandomaccessmemoriesofbipolartechnology (bipolarS-RAMs )intheformofa
monolithic integratedcircuitconsistingofasubstratelayeronwhicharemountedeither1or2
chipseachhavingastoragecapacityof1Kbit,containedinahousingtheexteriordimensions
ofwhichdonotexceed13x13mm,withnotmorethan23connecting pinsandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figures:
770639
770823
5120360
7379769
or
—otheridentification markings relatingtobipolarS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Staticmemoriesconsistingoftwostackedsubstratelayerswithoneortwostaticrandomaccess
memoriesofbipolartechnology (bipolarS-RAMs )intheformofmonolithic integratedcircuits,
eachwithastoragecapacityof1Kbitsandwithamaximum storagecapacityof4Kbits,
contained inahousingtheexteriordimensions ofwhichdonotexceed13x13mm,withnot
morethan23connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
770965
4599497
7379442
or
—otheridentification markings relatingtostaticmemories complying withthe
abovementioned description 0
ex85.21DII Programmable digitalsignalsynthesizer ofC-MOStechnology with32frequencygenerators to
generate8noteseachandasimultaneous outputofupto160notesintheformofamonolithic
integrated circuitcontained inahousing,theexteriordimensions ofwhichdonotexceed
25x25mm,withnotmorethan68connecting pinsorcontactareas.
Thehousingbears:
MEG
or
—otheridentification markings relatingtodigitalsynthesizers complying withthe
abovementioned description 0
ex85.21DII Repeatercircuit,ofbipolartechnology fortheregeneration ofpulsecode-modulated signals,in
theformofamonolithic integratedcircuit,contained inahousingtheexteriordimensions of
whichdonotexceed10x21mm,withnotmorethan16connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
XRC240
or
—otheridentification markings relatingtorepeatercircuitscomplying withthe
abovementioned description 0
ex85.21DII Dynamicrandomaccessmemorycontroller ofN-MOS (includingH-MOS)technology
(N-MOSD-RAMcontroller )capableofmultiplexing addressesandgenerating timing,inthe
formofamonolithic integratedcircuitcontainedinahousingtheexteriordimensions ofwhich
donotexceed17x62mm,withnotmorethan48connecting pinsor52contactareas,and
bearing :

23.12.85 OfficialJournaloftheEuropeanCommunities NoL346/39
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
C8208
or
otheridentification markingsrelatingtoN-MOSD-RAMcontrollers complying withthe
abovementioned description 0
ex85.21DII Single-chip microcomputers inC-MOStechnology ,intheformofamonolithic integrated
circuitconsisting ofanALUwithastoragecapacityof8bitswithaROMwithastorage
capacityof128KbitsandaRAMwithastoragecapacityof2Kbits,containedinahousingthe
exteriordimensions ofwhicharenotlessthan20x26mm,withaminimumof80connecting
pinsandbearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombinations of
figuresandletters:
HD6301Y
or
—otheridentification markingsrelatingtosingle-chip microcomputers complying withthe
abovementioned description 12
ex85.21DII C-MOSclock/calendarcircuit,incorporating aquartzcrystaloscillator ,independent timer
recordersandatimer,intheformofamonolithic integratedcircuit,contained inahousingthe
exteriordimensions ofwhichdonotexceed7x20mmwithnotmorethan16connecting pins
andbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
MM58174A 58274
or
—otheridentification markings relatingtoclock/calendarcircuitscomplying withthe
abovementioned description 0
ex85.21DII Programmable asynchronous communication elementcircuitinN-MOS (includingH-MOS )
technology ,fortheasynchronous transmission andreceptionofdata,intheformofa
monolithic integratedcircuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed16x54mm,withnotmorethan40connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
INS8250
WD8250
or
—otheridentification markingsrelatingtoACEcircuitscomplying withtheabovementioned
description 0
ex85.21DII Dynamic ,random-access read/writememoryofN-MOS (includingH-MOS )technology ,
(N-MOSD-RAMs )withastoragecapacityof64Kx4Kbits,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
17x34mm,withnotmorethan20connecting pinsorcontactareasarrangedin2parallel
lines(dual-in-line package )andbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters
TMS4464PD41254 PD41464 TMM41464
M5M4464HM50464 MB81464
or
—otheridentification markingrelatingtoN-MOSD-RAMs complying withthe
abovementioned description 10

NoL346/40 OfficialJournaloftheEuropean Communities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Encoder/decodercircuitusingthe'MANCHESTER '(MED)codeforthetransmission or
retransmission ofserialdata,ofC-MOStechnology andintheformofamonolithic integrated
circuitcontained inahousingtheexteriordimensions ofwhichdonotexceed16x33mm,
withnotmorethan20pinsandbearing :
—anidentification markingconsistingorincludingthefollowingcombination offiguresand
letters:
HD6409
or
—otheridentification markingsrelatingtocircuitscomplying withtheabovementioned
description 0
ex85.21DII UV-erasable programmable read-onlymemories (EPROMs )intheformofamonolithic
integrated circuitwithastoragecapacityof512Kbits,contained inahousingtheexterior
dimensions ofwhichdonotexceed20x42mm,withaquartzwindowontheuppersurface.
Thehousingbears:
—anidentification markingconsistingorincludingthefollowingcombination offiguresand
letters:
AM27512
or
—otheridentification markingsrelatingtoEPROMscomplying withtheabovementioned
description 0
ex85.21DII TTLLogicmodulesinbipolartechnology withnotmore,thansixlogicfunctionsindependent
ofeachotherandnotinterconnected ,intheformofamonolithic integratedcircuitcontained in
ahousingtheexteriordimensions ofwhichdonotexceed17x34mm,withnotmorethan24
connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresorletters:
SH767369
SH998088
or
—anotheridentification markingrelatingtologicmodulesasdescribedabove 0
ex85.21DII HardDiscDataSeparator (HDDS)ofN-MOS (includingH-MOS )technology intheformofa
monolithic integrated circuitcontained inahousingtheexteriordimensions ofwhichdonot
exceed8x33mm,withnotmorethan24connecting pinsandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
DP8460-2
DP8460-3
DP8460-4
or
—otheridentification markingsrelatingtodevicescomplying withtheabovementioned
description 0
ex85.21DII Controlandinterfacecircuitforcentralprocessor (CPU-Controller )ofHC-MOStechnology in
theformofamonolithic integratedcircuitcontainedinahousingtheexteriordimensions of
whichdonotexceed25x25mm,withnotmorethan68connecting pinsandbearing:
—anidentification markingconsistingoforincludingthefollowingcombinations ofletters
andfigures:
FE2000
L1A0392
or
—otheridentification markingsrelatingtocontrolandinterfacing circuitscomplying withthe
abovementioned description 0

23.12.85 OfficialJournaloftheEuropeanCommunities NoL346/41
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Circuitforthecontroloffloppydiscs(floppydisccontroller )ofC-MOStechnology ,intheform
ofamonolithic integratedcircuitcontainedinahousingtheexteriordimensions ofwhichdo
notexceed16x62mm,withnotmorethan48connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
lettersandfigures:
FE2100
G70360-33
or
—otheridentification markings relatingtoadaptorcircuitscomplying withthe
abovementioned description 8,5
ex85.21DII Pulsecodemodulation (PCM)CodecandfilterofNMOS (includingH-MOStechnology ),in
theformofamonolithic integrated circuit,consistingofafullyintegrated PCMcodecwith
transmit/receivefilters,contained inahousingtheexteriordimensions ofwhichdonotexceed
10x23mm,withnotmorethan16connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
2916
2917
or
—eitheridentification markingsrelatingtoPCMCodecandfilterdevicescomplying withthe
abovementioned description 8,5
ex85.21DII 6-Channel monolithic integrated circuit (Read/writedataprocessor circuit)forthe
amplification andconversion ofreadsignalsandconversion ofwritesignalsforharddiscdrives,
contained inahousingtheexteriordimensions ofwhichdonotexceed19x38mm,withnot
morethan28connecting pinsorcontactareasandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination oflettersand
figures:
SSI540
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description 0
ex85.21DII 8-Channel controlcircuitformaintaining aconstantelectromagnetic tractionforcewith
incorporated diodesandastoragecapacityof8bits,intheformofamonolithic integrated
circuit,ofC-MOStechnology contained inahousingtheexteriordimensions ofwhichdonot
exceed9x28mm,withnotmorethan22connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
UCN5801
or
—otheridentification markings relatingtocontrolcircuitscomplying withthe
abovementioned description 0
ex85.21DII 4-Channel controlcircuitformaintaining aconstantelectromagnetictractionforcewith
incorporated diodesandastoragecapacityof4bits,intheformofamonolithic integrated
circuitofC-MOStechnology ,contained inahousingtheexteriordimensions ofwhichdonot
exceed7x22mm,withnotmorethan16connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
UCN5813
or
—otheridentification markings relatingtocontrolcircuitscomplying withthe
abovementioned description 0

NoL346/42 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Electronic circuitforsynchronizing signalsbetweentheuserandtheexchangeinatelephone
system,intheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed14x37mm,withnotmorethan28connecting pinsand
bearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
QMV18CW1
or
—otheridentification markingrelatingtomicrocircuits complying withtheabovementioned
description 8,5
ex85.21DII Monolithic integrated circuitforscanninganddistributing logicsignals,foruseintelephone
exchanges ,contained inahousingtheexteriordimensions ofwhichdonotexceed
14x53mm,withnotmorethan40connecting pinsandbearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
QMV16BW1
or
—otheridentification markingrelatingtointegrated circuitscomplying withthe
abovementioned description 8,5
ex85.21DII Monolithic integrated interfacecircuitforpulsecodemodulation (PCM),ofC-MOS
technology ,withencoding ,decodingandfilteringfunctionsandaprocessing frequencyof
2565MHz,contained inahousingtheexteriordimensions ofwhichdonotexceed
10x28mm,withnotmorethan22connecting pinsandbearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
QMV81AD1
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description 8,5
ex85.21DII Six-channel monolithic integratedcircuitforthegeneration ofread/writesignalsforharddisc
drives,contained inahousingtheexteriordimensions ofwhichdonotexceed13x13mm,
withnotmorethan28connecting pinsandbearing:
—anidentification markingconsistingoforincludingthefollowingcombination oflettersand
figures:
SSI117
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description 0
ex85.21DII Programmable non-erasable read-onlymemories (PROMS)withastoragecapacityof16K
bits,intheformofamonolithic integrated circuitcontained inahousingtheexterior
dimensions ofwhichdonotexceed39x17mm,withnotmorethan32connecting pinsor
contactareasandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
27PS191A7C245 7C292
29683 7C291 HM6616
or
—otheridentification markingsrelatingtoPROMScomplying withtheabovementioned
description 0

23.12.85 OfficialJournaloftheEuropean Communities NoL346/43
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Amplifiers forafullrangeofsignalsfrom0to60KHzintheformofamonolithic integrated
circuitcontained inahousingtheexteriordimensions ofwhichdonotexceed6x13x26
mm,withnotmorethan18connecting pinsandaleakageofnotmorethan0,3nAand
bearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
ISO100
or
—otheridentification markingsrelatingtoamplifiers complying withtheabovementioned
description ,foruseinthemanufacture oftelephoneexchanges (a) 0
ex85.21DII Light-emitting diode(LED)madefromagallium-based semiconductor compound contained in
ahousingtheexteriordimensions ofwhichdonotexceed20x21mm,with2connecting pins
andbearing :
—anidentification markingconsisting oforincludingoneofthefollowingidentification
markings :
LT9305 LT9306
SLF209 SLF909
or
—otheridentification markingsrelatingtoLEDs,complying withtheabovementioned
description ;foruseinthemanufacture ofradiobroadcastreceiversandsoundrecordersor
reproducers (a) 0
ex85.21DII Single-chip microcomputer ofC-MOStechnology ,intheformofamonolithic integrated
circuit,consistingofanarithmetical logicunit(ALU)withanorganization of4bits,aread-only
memory (ROM)withastoragecapacityof2Kx8bits,adual-tone ,multi-frequency (DTMF)
generator ,arandomaccessmemory (RAM),withastoragecapacityof1Kbit,arandomaccess
memory (RAM)withastoragecapacityof512bitsandtwo12-bitcounters ,contained ina
housingtheexteriordimensions ofwhichdonotexceed15x40mm,withnotmorethan42
connecting pinsandbearing :
—anidentification markingconsisting ofthefollowingcombination offiguresandletters:
T6978
or
—otheridentification markingsrelatingtosingle-chip microcomputers complying withthe
abovementioned description 0
ex85.21DII Asynchronous First-inFirst-out (FIFO)memoriesofC-MOStechnology intheformofa
monolithic integrated circuitwithacapacityof64x4bits,or64x5bits,contained ina
housingtheexteriordimensions ofwhichdonotexceed11x24mmwithnotmorethan18
connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:
CY7C401
CY7C402
CY7C403
CY7C404
CY3341
or
—otheridentification markings relatingtoasynchronous First-inFirst-outmemories
complying withtheabovementioned description 0
ex85.21DII StaticRandomAccessMemories ofC-MOStechnology (C-MOSS-RAMs )intheformofa
monolithic integratedcircuitwithastoragecapacityof16Kbitsandanaccesstimeofnotmore
than45ns,contained inahousingtheexteriordimensions ofwhichdonotexceed9x27mm,
withnotmorethan20connecting pinsorcontactareas,andbearing :
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL346/44 OfficialJournaloftheEuropeanCommunities 23.12.85
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingeitherconsistingoforcontaining thefollowingcombination of
figuresandletters:
CY7C168
CY7C169
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII StaticRandomAccessMemories ofC-MOStechnology (C-MOSS-RAMs )intheformofa
monolithic integrated circuitwithastoragecapacityof16x4bits,anaccesstimenot
exceeding 35ns,contained inahousingtheexteriordimensions ofwhichdonotexceed9x21
mm,withnotmorethan16connecting pinsandbearing :
—anidentification markingeitherconsisting oforcontaining oneofthefollowing
combinations offiguresandletters:
CY7C189
CY7C190
CY74S189
CY54S189
CY27S03
C727S07
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Staticrandomaccessmemories ofC-MOStechnology (C-MOSS-RAMs )intheformofa
monolithic integrated circuitwithastoragecapacityof256x4bitsandanaccesstimenot
exceeding 60ns,contained inahousingtheexteriordimensions ofwhichdonotexceed
12x29mm,withnotmorethan22connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:
CY7C122
CY93422 /93L422
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21E Tungsten elementscoatedwithinsulating material,gridsandcathodesforuseinthe
manufacture ofelectrongunsformonochrome cathode-ray tubes(a) 0
ex90.02 Imagereversersmadeupfromanassemblyofopticalfibres 0
ex90.02B Imagereversersmadeupfromanassemblyofopticalfibres 0
ex90.19AIII Heartvalvesandpartsthereof 0
ex90.19BII Portablereadingapplianceforthevisuallyhandicapped inwhichafibreopticcameratransmits
amagnified imageontoadisplayscreen,andpartsthereof 3
ex91.11CII
or
ex91.11FAssemblyconsistingofaprintedcircuitonwhichismountedonequartzoscillator ,atleastone
watchcircuitandatleastonecapacitor ,ofathicknessnotexceeding 5mmforthemanufacture
ofproductsfallingwithinChapter91(a) 0
ex91.11F Assemblyconsistingofaprintedcircuitonwhichismountedawatchcircuit,withathickness
notexceeding 5mm,forthemanufacture ofproductsfallingwithinChapter91(a) 0
ex98.04AII Non-fibrous plasticpen-tipswithaninternalchannel 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .