20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/1
I
(Actswhosepublication isobligatory )
COUNCIL REGULATION (EEC)No3841/86
of8December 1986
temporarily suspending theautonomous CommonCustomsTariffdutiesonanumberof
industrialproducts
THECOUNCIL OFTHEEUROPEAN COMMUNITIES , HASADOPTED THISREGULATION :
Article 1
Theautonomous Common Customs Tariffdutiesforthe
productslistedinthetablesannexedtothisRegulation shall
besuspended atthelevelindicated inrespectofeachof
them.
Thesesuspensions shallbevalid:
—from1Januaryto31March1987fortheproductslisted
inTableI,
—from1Januaryto30June1987fortheproductslistedin
TableII.HavingregardtotheTreatyestablishing theEuropean
Economic Community ,andinparticular Article28
thereof,
HavingRegardtothedraftRegulation submitted bythe
Commission ,
Whereasproduction oftheproductsreferredtointhis
Regulation isatpresentinadequate ornon-existent within
theCommunity andproducers arethusunabletomeetthe
needsofuserindustries intheCommunity ;
WhereasitisintheCommunity 'sinteresttosuspendthe
autonomous CommonCustomsTariffdutiesonlypartially
incertaincases,dueparticularly totheexistence of
Community production ,andtosuspendthemcompletely in
othercases;
Whereas ,takingaccountofthedifficulties involvedin
accurately assessingthedevelopment oftheeconomic
situationinthesectorsconcerned inthenearfuture,these
suspension measuresshouldbetakenonlytemporarily with
theirtermofvalidityfixedtocoincidewiththeinterestsof
Community production ,Article2
ThisRegulation shallenterintoforceon1January1987.
ThisRegulation shallbebindinginitsentiretyanddirectlyapplicable inallMember
States.
DoneatBrussels,8December 1986.
FortheCouncil
ThePresident
N.LAWSON

OfficialJournaloftheEuropeanCommunities20.12.86NoL362/2
ANNEX
TABLE I
Rateof
autonomous
duty(%)CCT
headingNoDescription
ex38.19X
ex39.02CVIb)
ex39.02CXI
ex81.04FIPreparationconsistingessentiallyofalkalineasphaltsulphonatehavingadensityofnotless
than1,2andnotmorethan1,5andasolubilityinwaterofnotlessthan70%byweight
Plates,madefromacopolymerofmaleicanhydrineandstyrene,coveredonbothsideswitha
sheetoftheabovementioned copolymermodifiedwithastyrene-butadiene blockcopolymer,
whetherornotpigmented
Polyvinylalcoholfilmsolubleinwateratatemperature of20°C
Unwroughthafniumhavingapurityofnotlessthan95%byweightandazirconiumcontentof
notmorethan4,5%byweight0
0
0
0

20.12..86 OfficialJournaloftheEuropeanCommunities NoL362/3
TABLE -II
CCT
headingNoDescriptionRateof
autonomous
duty(%)
Mineraloilcontaining morethan60%ofaromaticconstituents byweightandlessthan0,8%
ofsulphurbyweight,ofwhichnotmorethan15%byvolumedistilsat250°C,foruseinthe
manufacture ofneedlecokes(a)
Syntheticparaffinwaxhavingamolecularweightofnotlessthan460andnotmorethan
1560
Aluminium hydroxide oxideintheformofpseudo-boehmite
Bariumtitanatecontaining byweightnotmorethan0,05%ofiron
Lanthanum bromideoxide
Hexafluoropropene
Dibromomethane
l,6,7,8,9,14,15,16,17,17,18,18-Dodecachloropentacyclo[12.2.1.1 6'9.02'13.05'10]octadeca­
7,15-diene ,foruseinthemanufacture ofpolyethylene andsyntheticrubber(a)
Ethanesulphonyl chloride
1,2-Epoxybutane
1,2-Epoxy-4 -(epoxyethyl )cyclohexaneex27.07GII
ex27.13BII
ex28.20A
ex28.47F
ex28.52B
ex29.02AI
ex29.02AIII
ex29.02B
ex29.03CI
ex29.09B
ex29.09B
ex29.09B
ex29.14AXI
ex29.14BI
ex29.14DIV
ex29.16D
ex29.25BIIc)
ex29.26AI
ex29.31B
ex29.35Q
ex29.35Q
ex29.35Q
ex29.35Q2,3-Epoxypropan-l-ol (glycidol)0
0
4
0
0
0
3
0
3
0
0
0
0
0
0
5
0
0
0
4
0
0
0Trimethyl orthoacetate
2,3-Epoxypropyl methacrylate
Methyl3-chlorobenzoate
Methyl5-(2,4-dichlorophenoxy)-2-nitrobenzoate
Barbituric acid
1,2-Benzisothiazol-3-one 1,1-dioxide (saccharin ,o-benzoicsulphimide )anditssodiumsalt
3,3-Dimethyl-l-methylthiobutanone oxime
Zotepine (INN)
Ofloxacin (INN)
3'-Chloro-6'-cyclohexylaminospiro[isobenzofuran-l(3 //),9'-xanthen]-3-one
6'-(A^-Ethyl-/?-toluidino)-2'-(A r-methylanilino)spiro[isobenzofuran-l(3i /),9'-xanthen]-3-one
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL362/4 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex29.35Q Carteololhydrochloride (INNM) 0
ex29.39DII Methylprednisolone (INN)anditssaltsandesters1
ex29.44Cand
ex30.03AIIb)Vancomycin (INN)anditssaltsandesters
0
ex32.07B Inorganiccolouringmatterpreparations mentioned inNote3toChapter32,inhollow
polyurethane sphereshavingadiameteroflessthan200micrometres0
ex32.09AIIand
ex39.01CVPolyurethane of2,2'-(tert-butylimino)diethanol and4,4'-methylenedicyclohexyl isocyanate ,
dissolvedinN,N-dimethylacetamide ,withapolymercontentofnotlessthan48%by
weight0
ex32.09AIIand
ex39.02CXIVa)Copolymer ofp-cresolanddivinylbenzene ,dissolvedinN,N-dimethylacetamide ,witha
polymercontentofnotlessthan48%byweight0
ex34.02 Aqueoussolutioncontainingnotlessthan30%andnotmorethan50%ofdisodiumalkyl
[oxydi(benzenesulphonate )]0
ex35.07 Aspergillus alkalineproteinase0
ex38.16 Unsterilebloodserumobtainedfromthebloodofabovinefoetusornon-immunized newly
borncalf0
ex38.19E Monoalkylbenzenes ,obtainedbythealkylationofbenzenewithpolyalkenes andhavingan
averagemolecularweightofnotlessthan680andnotmorethan8200
ex38.19G Catalysts ,intheformofapowder,consistingofamixtureoftitanium,magnesium and
aluminium compounds onacarrierofsilicondioxide,containing byweight:
—notlessthan3%andnotmorethan6%oftitanium
—notlessthan2%andnotmorethan3%ofmagnesium
—notlessthan0,3%andnotmorethan0,5%ofaluminium ,
foruseintheproduction ofpolyethylene withadensityofatleast0,935g/cm3(a)0
ex38.19G Catalysts,consistingofamixtureoftitanium,magnesium andaluminiumcompounds ,inthe
formofasuspension inhexane,containing byweight:
—notlessthan3%andnotmorethan6%titanium
—notlessthan1,5%andnotmorethan3%magnesium
—notlessthan0,3%andnotmorethan0,5%aluminium
foruseintheproductionofpolyethylene withaldensityofatleast0,930g/cm3(a)0
ex38.19G Catalysts,consistingofdialkyldimethylammonium acetatecontainingchainlengthsof16and
18carbonatoms,suspendedinorganicsolventstoaconcentration ofnotlessthan40%by
weight0
ex38.19G Catalysts,intheformofgranulesorringshavingadiameterofnotlessthan3mmandnotmore
than10mm,consistingofsilversupportedonaluminiumoxide,thesilvercontentbeingnotless
than8%andnotmorethan20%byweight0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/5
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex38.19S Dopedsiliconwafers,ofCzochralski technology ,withadiameterof70mmormore,
unpolished andwithanoxygencontentofnotlessthan5x1017atomspercm3 0
ex38.19X Aldicarb (ISO),dissolvedindichloromethane ataconcentration ofnotlessthan35%andnot
morethan40%byweight 0
ex39.01CIIIa) Polyesterfilm,dyedinthemass,ofathicknessofnotmorethan25micrometres andmetallized
ononeside 6
ex39.01CIIIa) Polycondensation products ofterephthalic acidwithamixtureofcyclohex­
1,4-ylenedimethanol andethane-1,2-diolintheformofafilm 0
ex39.01CIIIa) Polyesterfilmhavingathicknessofnotmorethan70micrometres ,coatedononesidewitha
substancewhichbecomescolouredwhenheatedtonotmorethan100°Cinthepresenceof
salicyclicacid0
ex39.01CIIIa) Polyesterfilmhavingathicknessofnotmorethan10micrometres ,coatedononesidewith
salicyclicacid0
ex39.01CIIIb) Polycondensation products ofterephthalic acidwithamixtureofcyclohex­
1,4-ylenedimethanol andethane-i,2-diol,inoneoftheformsmentioned inNote3(b)to
Chapter390
ex39.01CV Sheetsofmicroporous polyurethane reinforced inthemasswithpolyamidefibres,havinga
thicknessofnotlessthan0,5mmandnotmorethan1,5mm,forthemanufacture ofimitation
leather (a) 6,9
ex39.02CIa) Polyethylene ,inoneoftheformsmentioned inNote3(b)toChapter39,havingadensityofnot
lessthan0,958g/cm3at23°Candcontaining byweightnotmorethan:
—50ppmofaluminium
—2ppmofcalcium
—2ppmofchromium
—2ppmofiron
—2ppmofnickel
—2ppmoftitanium
—8ppmofvanadiumIforthemanufacture ofchlorosulphonated polyethylene (a) 0
ex39.02CIa) Polyethylene ,inoneoftheformsmentioned innote3(b)toChapter39,havingadensityofnot
lessthan0,945andnotmorethan0,985g/cm3forthemanufacture oftypewriter ribbonor
similarribbon(a) 0
ex39.02CVIa) AnA-B-Ablockcopolymer ofpolystyrene ,ethylene-butylene copolymer andpolystyrene ,
containingnotmorethan35%byweightofstyrene,inoneoftheformsmentioned innote3(b)
toChapter39 0
ex39.02CXI Polyvinylbutyralfilmhavingagraduated colouredband 6
ex39.02CXIVa) Brominated polystyrene containing notlessthan58%andnotmorethan71%byweightof
bromine,inoneoftheformsmentioned inNote3(b)toChapter39 0
ex39.02CXIVa) Ionomerresinconsistingofasaltofacopolymer ofethyleneandmethacrylic acid 0
ex39.02CXIVa) Ionomerresinconsistingofasaltofaterpolymer ofethylene,isobutylacrylateandmethacrylic
acid 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

20.12.86 NoL362/6 OfficialJournaloftheEuropeanCommunities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex39.02CXIVa)
ex39.02CXIVa)
ex39.02CXIVa)
ex39.02CXIVb)
ex39.02CXIVb)
ex39.02CXIVb)
ex39.02CXIVb)
ex39.03BVa)2
ex39.03BVa)2
ex51.01A
ex51.02AI
ex56.01APolymerization productsofacrylicacid,withalkylmethacrylate andsmallquantitiesofother
monomers foruseasthickeners inthemanufacture oftextileprintingpastes(a)
Copolymers ofethylenewithacrylicacid,orwithmethacrylic acid,containingnotlessthan
16%andnotmorethan30%ofacrylicacidormethacrylic acidbyweight,inoneoftheforms
mentioned inNote3(b)toChapter39
Polymerization productsofacrylicacidwithsmallquantitiesofapolyunsaturated monomer,
foruseasastabilizerinemulsionsordispersions withapHofmorethan13(a)
Filmofamixtureofpolyvinylidene fluorideandofanacrylicpolymerhavingathicknessnot
lessthan40micrometres andnotmorethan60micrometres
Sheetofathicknessofnotlessthan1mmandnotmorethan3mm,consistingofacopolymerof
ethylenewithchlorotrifluoroethylene ,whetherornotbackedwithawovenglassfibre
fabric
Filmsandsheetsofacopolymerofethylenewithchlorotrifluoroethylene withathicknessofnot
lessthan12andnotmorethan400micrometres
Filmofacopolymerofethylenewithmethylacrylate,havingathicknessofnotmorethan
0,05mm,forthemanufacture ofdisposablemedicalgloves(a)
Ethylhydroxyethylcellulose ,insolubleinwater
Hydroxypropylcellulose
Texturizedyarnofpolypropylene ,impregnated withsilicone-based water-repellant
Monofilofpolytetrafluoroethylene
Acetalized ,multicomponent spunfibreswithamatrixfibrilstructure,consistingofemulsion
polymerized polyvinylalcoholandpolyvinylchloride
Polyvinylalcoholbondedfibrefabrics,withathicknessofnotlessthan200micrometres and
notmorethan280micrometres andofaweightofnotlessthan20g/m2andnotmorethan
50g/m2whetherornotimpregnated orcoated,inthepieceorcutintorectangles
Needlepunchedsyntheticfibrefeltsonawovensyntheticfibrebasecoatedorcoveredonone
sidewithpolytetrafluoroethylene film,forthemanufacture offiltrationproducts (a)
Circularflatleadglassplates,groundandpolishedwithworkededgesandhaving:
—athicknessofnotlessthan3,5mmandnotmorethan5mm
—adiameterofnotlessthan135mmandnotmorethan140mm
—adensityofnotlessthan2,88g/cm3,and
—atransmission ofnotlessthan87%atawavelength ofbetween450nanometres and800
nanometres forincorporation intovideoprojectors (a)
Faceplatesmadewhollyofglass,havingadiagonaldimensionofnotmorethan61cmanda
raisededgeintendedforuseinthemanufacture ofmonochrome cathoderaytubes(a)
Glassconeswithashapededgeandhavingadiagonaldimensionofnotmorethan61cm
intendedforuseinthemanufacture ofmonochrome cathoderaytubes(a)0
0
6
0
0
0
6
4
0
0
0
0
0
0
0
0
0ex59.03B
ex59.17A
ex70.07
ex70.11
ex70.11
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/7
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex81.04DIb) Chromium ,intheformofcathodechips,pelletsorbriquettes ,whichcontainsnotmorethan
0,10%byweightoftotaloxygen,notmorethan0,015%byweightoftotalaluminium andnot
morethan0,001%byweightofaluminium compounds insolubleinboiling5Nhydrochloric
acidandinboilingfumingperchloric acid,andevaluatedasaluminium ,fortheproduction of
alloyforthemanufacture ofthefollowingpartsofgasturbinesandjetengines(a):
—blades,fixedormovable,includingtheirrings
—vanes
—nozzles 0
ex84.18CIIb) Partsofapparatus forcatalyticconversion ofnitrogenoxidesintonitrogenandwater,
consistingofshapedandfiredunitsinhoneycomb structureofamixtureofvanadiumoxidesor
vanadiumsulphatesandtitaniumdioxideorbariumsulphate,orofvanadium oxide,tungsten
(wolfram )oxideandtitaniumdioxide,contained inametalframework 0
ex84.18CIIb) Partsofapparatus forcatalyticconversion ofoxidesofnitrogennitrogenandintowater,
consisting ofperforated platescoatedwithamixtureofoxidesofvanadium ,titaniumand
molybdenum inametalframework 0
ex84.53B Opticalreaderforreadingdot-matrix printingcharacters andconverting themintoelectrical
signals,comprising areadheadcontaining anopticaldetector,anamplifier ,afocusinglensand
twolamps,linkedbyoneortwoflatcablestoacentralmoduleofwhichthedimensions donot
exceed200x220mm,comprising aprintedcircuitboardonwhicharemounted a
microprocessor ,animagerecognition circuitandananalog/digitalconverter 1
ex84.55C Dot-matrixdisplays,whoseexternaldimensions donotexceed15x90x280mmexcluding
cablesandconnectors consistingofalayerofliquidcrystalsbetweentwoglasssheetsorplates
with30720dots(arrangedin64linesand480columns),mountedonaprinted-circuit board
comprising electroniccomponents providing drivefunctions ,withorwithoutcableand
connector 0
ex84.55C Dot-matrixdisplaysconsistingofalayerofliquidcrystalbetweentwoglasssheetsorplates
withamaximum of15360dots(arrangedin64linesand240columns),completewithan
interfaceelectronics boardinC-MOStechnology whoseexteriordimensions donotexceed
186x75x15mm,withnotmorethan544connecting areas 0
ex84.55C Winchester orthinfilmtechnology magneticheadsfordiscfileperipherals ,aswellascarrying
armsequippedwithsuchmagneticheads,capableofrecordingtoadensityofnotlessthan10
trackspermillimetre 0
ex84.55C Assemblies forautomaticdata-processing machines ,comprising UV-erasable ,programmable ,
read-onlymemories (EPROMs),withastoragecapacityof256Kbits,consistingofamultilayer
substrate ,theexteriordimensions ofwhichdonotexceed17x39mm,onwhichare
mounted :
—twoUV-erasable ,programmable ,read-only memories (EPROMs),intheformof
monolithic integrated circuits,eachwithastoragecapacityof128Kbitsandaquartz
windowontheuppersurface
—adecoderintheformofamonolithic integrated circuit
—adecoupling capacitor
—tworesistances
Theassemblies bear:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
EDH7832MM-30
or
—otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 2
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL362/8 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
.autonomous
duty(%)
ex84.55C
2Assemblies forautomaticdata-processing machines,comprising UV-erasable ,programmable ,
read-onlymemories (EPROMs),withastoragecapacityof256Kbits,consistingofamultilayer
substrate ,theexteriordimensions ofwhichdonotexceed17x39mm,onwhichare
mounted :
—fourUV-erasable ,programmable ,read-onlymemories (EPROMs),intheformof
monolithic integrated circuits,eachwithastoragecapacityof64Kbitsandaquartz
windowontheuppersurface
—onedecoderintheformofamonolithic integrated circuit
—onedecoupling capacitor
Theassemblies bear:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
EDH7832MC-35
or
—otheridentification markingsrelatingtoassembliescomplyingwiththeabovementioned
description
Assemblies forautomatic data-processing machines,comprising staticrandom-access
memoriesofC-MOStechnology (C-MOSS-RAMs)withastoragecapacityof32Kbits
consistingofamultilayersubstrate,theexteriordimensions ofwhichdonotexceed
17x39mm,onwhicharemounted :
—twostaticrandom-access memoriesofC-MOStechnology (C-MOSS-RAMs)intheform
ofmonolithic integratedcircuitseachwithastoragecapacityof16Kbits
—adecoderintheformofamonolithic integrated circuit
—adecoupling capacitor
Theassemblies havenotmorethan28connecting pinsandbear:
—anidentification markingeitherconsisting oforincludingoneofthefollowing
combinations offiguresandletters:
EDH8804C-20
EDH8804CL-20
or
—otheridentification markingsrelatingtoassembliescomplyingwiththeabovementioned
descriptionex84.55C
2
ex84.55C Assemblies forautomatic data-processing machines ,comprising staticrandom-access
memoriesofC-MOStechnology (C-MOSS-RAMs)withastoragecapacityof64Kbits
consistingofamultilayersubstrate,theexteriordimensions ofwhichdonotexceed
17x39mm,onwhicharemounted :
—fourstaticrandom-access memoriesofC-MOStechnology (C-MOSS-RAMs)intheform
ofmonolithic integratedcircuitseachwithastoragecapacityof16Kbits
—adecoderintheformofamonolithic integrated circuit
—adecoupling capacitor
Theassemblies havenotmorethan28connecting pinsandbear:
—anidentification markingeitherconsisting oforincludingoneofthefollowing
combinations offiguresandletters:
EDH8808B-20
EDH8808C-10
EDH8808C-12
EDH8808C-15
EDH8808C-20
EDH8808CL-15
EDH8808CL-20
or
2—otheridentification markingsrelatingtoassembliescomplyingwiththeabovementioned
description

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/9
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex84.55C Assemblies forautomaticdata-processing machinescomprising aUV-erasable ,programmable ,
read-onlymemory (EPROM )withastoragecapacityof64Kbitsandastaticrandom-access
memoryofC-MOStechnology (C-MOSS-RAMs )withastoragecapacityof32Kbits
consisting ofamultilayer substrate ,theexteriordimensions ofwhichdonotexceed
17x39mm,withnotmorethan28connecting pins,onwhicharemounted :
—oneUV-erasable ,programmable ,read-onlymemory (EPROM )intheformofamonolithic
integrated circuit,withastoragecapacityof64Kbitsandwithaquartzwindowonthe
uppersurface
—twostaticrandom-access memoriesofC-MOStechnology (C-MOSS-RAMs )intheform
ofmonolithic integrated circuits,eachwithastoragecapacityof16Kbits
—onedecoderintheformofamonolithic integrated circuit
—onedecoupling capacitor
—tworesistances
Theassemblies bear:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
EDH90804BS-25(15)
EDH90804BS-30(20)
or
—otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 2
ex84.55C Assemblies forautomaticdata-processing machines ,consistingoftwostackedsubstratelayers
withoneortwostaticrandomaccessmemoriesofbipolartechnology (bipolarS-RAMs )inthe
formofmonolithic integrated circuits,eachwithastoragecapacityof1Kbitsandwitha
maximum storagecapacityof4Kbits,containedinahousingtheexteriordimensions ofwhich
donotexceed13x13mm,withnotmorethan23connecting pinsandbearing :
—anidentification marking,eitherconsisting oforincluding oneofthefollowing
combinations offigures:
770965
4599497
7379442
or
—otheridentification markingsrelatingtoassemblies complying withtheabovementioned
description 0
ex84.55C Assemblies forautomatic dataprocessing machinescomprising a32-bitmicroprocessor of
C-MOStechnology intheformofanassembly ,consistingofacentralprocessing unit(CPU)
andamemoryunitcontained intwoseparatechipsmountedonasubstratetheexterior
dimensions ofwhichdonotexceed16x55mm,withnotmorethan60connecting pinsand
bearing:
—anidentification markingconsisting of,orincludingthefollowingcombinations :
57-19400 57-00000
or
0 —otheridentification markingsfordevicesrelatingtotheabovementioned description
ex84.55C Magneticbubblememorieswithastoragecapacityofnotmorethanfourmegabitscontained in
ahousingtheexteriordimensions ofwhichdonotexceed43x44mm,withnotmorethan
42connecting pinsorcontactareasandbearing:

NoL362/10 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex84.55C
(cont'd)—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresorfiguresandletters:
BDL0133 MBM2011 FBM64DA
BDL0134 MBM2256 7110
BDN0151FBM54DB 7114-1
or
—otheridentification markings relatingtomagnetic bubblecomplying withthe
abovementioned description 0
ex84.55C Component formingthearithmetic/logicelementofacentralprocessing unit,comprising not
morethannineprintedcircuitboards,thedimensions ofwhichdonotexceed290x310mm
oneachofwhicharemountednotmorethan121ECLgatearraysorECLrandomaccess
memories (ECL-RAMs )andcombinations thereofcontainedinaframework thedimensions of
whichdonotexceed611x501x596mmwhichservesasahousingandinterconnector for
theprintedcircuitboards,whichbear:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
CO1B2675E500
CO1B2675H500
CO1B2675H501
CO1B2675H502
CO1B2675H503
CO1B2675H504
or
—otheridentification markingsrelatingtocomponents complying withtheabovementioned
description0
ex84.55C Displayunitwithmaximumdimensions ,excludingcablesandconnectors ,ofl5x115x290
mm,comprising twolayersorsheetsofglassenclosing128000liquid-crystal dotsarrangedin
200rowsand640columns,fixedtoaprintedcircuitfittedwithelectroniccomponents
performing controlfunctions ,withorwithoutcablesandconnectors0
ex84.55C Integratedmemoryunitforelectronictypewriters ,comprising aprintedcircuitwithtwoorfour
staticread-write random-access memorieseachwith8Kx8bitcapacity,electroniccontrol
components andmemoryback-upbatteries,containedinacartridgefittedwithconnectors ,of
externaldimensions notexceeding 11X40x90mm,andbearinganidentification mark
consistingoforincludingthefollowingcombination oflettersandfigures:
MEMOCARTi
or
otheridentification markingsrelatingtointegrated memoryunitscomplying withthe
abovementioned description0
ex84.59B Integrallyforged,rough-turned components ,withunitweightsofmorethan150tonnes,for
reactorpressurevessels0
ex84.61B Hydraulicfive-stagevalve,withtwomagneticvalvesforservo-control ,consistingessentiallyof
threeplasticsections,forincorporation inwatersofteningdeviceswithautomaticregeneration
(throughflow andcounterflow )withamaximumcapacityof650Lionexchangevolume(a)0
ex84.63BII Integrallyforgedandroughlyshapedgeneratorandturbineshaftsofaweightexceeding
215tonnes 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/11
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.01BIb) DCelectricmotor,brushless ,withamaximumtorqueof0,20N/m,withanincorporated
electroniccontrolplate,outsiderotorwithcircularcross-section andmaximum diameterof
95mm,aluminium precision-made hubwithinsidediameterof28,6mm,speedof300or360
rpm,supplyvoltageof12volts±10% 0
ex85.01BIb) DCelectricmotor,brushless ,withamaximumtorqueof0,20N/m,withoutsiderotorofa
maximum diameterof55mm,couplingflangeofadiameterof77mmandprecision-made
chuckofadiameterof44mm,four-phase winding,ratedspeedof3600rpm,supplyvoltage
12volts±10%andfittedwithwiresandconnectors 0
ex85.01BIb) Twoorthree-phase DCelectricmotor,brushless ,withamaximumtorqueof0,20N/m,with
anexternalrotorof62mmmaximumdiameterandincorporating anelectroniccontrolpanel,
maximum dimensions 85x85x20mm,includingtheshaft,nominaloperatingvoltageof
12volts±10%andarateofrotationof300rpm 0
ex85.01BIb) Bipolarsteppingmotorswithanangleofstepof1,8degrees,200stepsperrevolution ,2-phase
rotationsequence withbipolar-type windings ,maximum externaldimensions of
39x39x20or25mmexcludingshaft,fixingscrewsandboss,withaminimumtorqueof
0,25N/mfortheversionwithamaximumheightof20mmand0,35N/mfortheversionwith
amaximum heightof25mm 0
ex85.01BIb)J
Hybridsteppingmotor,withanangleofstepof0,9°,400stepsperrevolution ,4-phaserotation
sequencewithbipolar-type winding,consistingofarotor,ofalaminatedstatorheldbetween
twosquareflanges,notmorethan40mmwide,fittedwithbiterminate shaft,wiresand
connectors 0
ex85.01BIb) Hybridsteppingmotorwithanangleofstepof0,9°,400stepsperrevolution ,2-phaserotation
sequenceandbipolarwindings ,comprising arotorandastatorencapsulated inacylindrical
housingwithamaximumdiameterof47mmandmaximum thicknessof14mm,fittedwitha
singleshaftoutputandcableswithconnectors 0
ex85.01Bib) Hybridsteppingmotorwithanangleofstepof0,9°,400stepsperrevolution and2-phase
rotationsequence ,andbipolarwindings ,comprising arotor,alaminated statorenclosed
betweentwosquaresectionflangeswithsidesnotexceeding 40mm,anintegraltwoor
three-phase tachometer enclosedinacapwithamaximum diameterof35mm,andseparate
cablesandconnectors forthemotorandtachometer outputs,withmaximum dimensions of
40x40x62mm,includingtheshaft 0
ex85.01BIb) Direct-current bipolarsteppingmotorwithasinglestator,anoutputofnotmorethan37,5W,
arotaryangle/stepof180°,twostepsperrotation,atwo-phaserotationcyclewithsingle-pole
winding,anoutputtorqueofnotlessthan0,1x10"6Nmandnotmorethan0,1X10"4Nm
andasupplyvoltageofnotmorethan3V 0
ex85.01BIb) Hybridsteppingmotorwithanangleofstepof0,9°,400stepsperrevolution ,two-phase
rotationsequencewithbipolarwinding,comprising arotor,alaminated statorenclosed
betweentwoflanges,oneofsquaresectionwithasideof40mmmaximum ,theotherfrontface
havingashapedprofilewithtwoprojections withfixingslots,aanintegraltwo-orthree-phase
tachometer enclosedinacoverofdiameterof35mmmaximum ,separatecablesandconnectors
forthemotorandtachometer outputs,withoveralldimensions notexceeding40x40x62
mm,includingtheshaftbutexcludingtheprojections ofthefrontflange
1
J0
ex85.01BII Staticconverterconsistingofacombination ofsevendiodesincascade,foroutputvoltagesof
notlessthan40kVDCwithaloadcurrentofnotlessthan3mA 0

NoL362/12 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.03 Dryzinc/carbonbatteriesofavoltageofnotlessthan5,5andnotmorethan6,5andofasize
notexceeding110x90x5mm,forincorporation infilmcassettesforinstantpictures (a) 0
ex85.03 Lithiumiodinesinglecellbatterywithdimensions of45x9X23mmandavoltagenot
exeeding2,8 0
ex85.13Bor
ex85.21DIIOpto-electronic receivingdevice(PINFETreceiver)withawavelength range1300-1600
nanometres ,andaspeedofnotlessthan678megabitspersecond,intheformofahybrid
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
25mmx13mmx13mm,withnotmorethan16connecting pins,withanattachedoptical
fibrelead(pig-tail),andbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
416/7/97013
QDFI-XXXX-001
or
—otheridentification markingsrelatingtodevicescomplying withtheabovementioned
description 0
ex85.18B Adjustable capacitor ,intheformofacircularplatewithadiameterofnotmorethan3mm,
fittedwithascrewheadinitscentreandtwoconnecting tags,ofathicknessnotexceeding 3mm
andacapacityoffrom5to30picofarads ,forthemanufacture ofproductsfallingwithin
Chapter91(a) 0
ex85.19A Thermalrelayscontainedinahermetically sealedglasscartridgenotexceeding35mminlength
excludingwires,withamaximumleakagerateof10-6cm3He/secatonebarinthetemperature
range0to160°C,tobeincorporated intocompressors forrefrigerating equipment (a) 0
ex85.19A Reedswitchesintheformofaglasscapsulecontaining notmorethanthreeelectricalcontacts
onmetalarmsandasmallquantityofmercury 0
ex85.19C Single-face printedcircuit,ofdimensions notexceeding30x30mm,forthemanufacture of
productsfallingwithinChapter91(a) 0
ex85.21AV Cathode-ray tubeswithdotmask(so-calleddot-masktechnology ),withelectrongunsarranged
intriangularfashion(so-calleddeltatechnology ),withadistancebetweenthecoloureddotsof
0,31mm,withdevicesforautomatic convergence 0
ex85.21AV Cathode-ray tubeswithamemory (directviewstoragetubes)forthereproduction of
alphanumeric andanaloguedata,equippedwithascanningdevice,forreadingtheimages 0
ex85.21AV Colourcathoderaytubeswithadotmaskequippedwithelectrongunsplacedsidebyside
(in-linetechnology )withadistanceoflessthan0,45mmbetweencolourdotsandwithatleast
oneofthefollowingcharacteristics :
—adiagonalscreenmeasurement ofnotlessthan42cmorlessthan26cm,adiagonalangleof
deflectionofnotmorethan90degreesandconvergence errorsexceeding0,8mmatthe
corners ,
—abuiltin-system ,inseparably linkedtothetube,fortheabsorption ofvibrations (socalled
pottingsystem),
—withoutinternalmagneticscreen,
—aphosphorlayercalibratedwiththefollowingnominalcoordinates forthecolourdots:
red green blue
X
Y0,64
0,330,29
0,600,15
0,06
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/13
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21AV
(cont'd)or
X
Y0,64
0,340,31
0,5950,155
0,07
or
X
Y0,62
0,330,21
0,6150,15
0,06
or
X
Y0,610
0,3500,307
0,5950,150
0,065
or
X
Y0,61
0,350,205
0,6800,15
0,065
or
X
Y0,62
0,350,29
0,600,15
0,065 0
ex85.21AV Colourcathoderaytubeswithadotmaskequippedwithelectrongunsinatriangularfashion
(deltatechnology )withadistanceoflessthan0,4mmbetweencolourdots,withatleastoneof
thefollowingcharacteristics :
—adiagonalscreenmeasurement ofatleast66cm
—equippedwithaphosphorlayercalibratedwiththefollowingnominalcoordinates forthe
colourdots:
red green blue
X
Y0,64
0,330,29
0,600,15
0,06
or
X
Y0,64
0,340,31
0,5950,155
0,07
or
X
Y0,610
0,3500,307
0,5950,150
0,065
or
X
Y0,61
0,350,205
0,6800,15
0,065
or
0,15
0,065X
Y0,62
0,350,29
0,60 0
ex85.21AV Displaysintheformofatubeconsistingofaglasshousingmountedonaboardthedimensions
ofwhichdonotexceed350x300mmexcludingleads.Thetubecontainsoneormorerowsof
characters orlinesarrangedinrows,eachcharacterorlineconsistingoffluorescent or
phosphorescent elements .Theseelementsaremountedonametallized basewhichiscovered
withfluorescent substancesorphosphorescent saltswhichgiveofflightwhenbombarded with
electrons 0
ex85.2.1AV Flatscreenmonochrome cathoderaytubeshavingadiagonalscreenmeasurement ofnotless
than142mmandnotmorethan145mm,aluminescence ofbetween300and400lumen,a
resolutionofbetween0,06and0,1mm,phosphortypesP1orP55orP56,ananodevoltage
ofmorethan34kV,afocusvoltageofmorethan7kVandacathodecurrentofnotless
than3mA 0
ex85.21C Quartzcrystaloscillatingatafrequencyof32768Hz,containedinacylindricalhousingofa
lengthnotexceeding8,2mmandadiameternotexceeding3,2mm,forthemanufacture of
productsfallingwithinChapter91(a) 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL362/14 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Digitaldisplaysofasizenotexceeding25x35mm,consistingofaprintedcircuitboardon
whicharemounted ,underaplasticcover,upto22light-emitting diodesmanufactured from
gallium-based semi-conductor compounds .Eachdisplayconsistsofasinglecharacterwithor
withoutaplusorminussignand/oroneortwodots 7
ex85.21DII Digitaldisplays,consistingofaprintedcircuitboardofasizenotexceeding35x90mmwitha
singlelineofcharacters ,notlessthanthreeinnumber,comprising light-emitting diodesmade
fromgallium-based semi-conductor compounds mountedthereon.Eachcharacteriscomposed
ofuptoeightsegmentswithorwithoutadecimalpointandthelineofcharactershasa
protectivecoverofplastic0
ex85.21DII Germanium-gold diodeswithforwardvoltagenotexceedingIVat5mA0
ex85.21DII Light-emitting diode(LED)madefromagallium-based semiconductor compoundcontainedin
ahousingtheexteriordimensions ofwhichdonotexceed20x21mm,withtwoconnecting
pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingidentification
markings :
LT9305 LT9306
SLF209 SLF909
or
—otheridentification markingsrelatingtoLEDs,complying withtheabovementioned
description0
ex85.21DII Read-onlymemories (ROMs),intheformofamonolithic integratedcircuit,withastorage
capacityof16Kx8bits,withread-register andserialoutputcontrol,containedinahousing
theexteriordimensions ofwhichdonotexceed50x16mm,withnotmorethan40connecting
pinsandbearing :
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
orincludingoneofthosecombinations :
from62000to62999
or
—otheridentification markingsrelatingtoROMscomplying withtheabovementioned
description0
ex85.21DII Read-onlymemoryinC-MOStechnology (C-MOSROM)withastoragecapacityof256Kbits
andastandbycurrentofnotmorethan0,03mA,intheformofamonolithicintegratedcircuit
containedinahousingtheexteriordimensions ofwhichdonotexceed17x50mm,withnot
morethan54connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
HN61256
HN613256
MB83256
or
—otheridentification markings relatingtoC-MOSROMscomplying withthe
abovementioned description7
ex85.21DII Read-onlymemoryofC-MOStechnology (C-MOSROM)withastoragecapacityofone
megabitintheformofamonolithic integratedcircuitcontainedinahousingtheexterior
dimensions ofwhichdonotexceed17x39mm,withnotmorethan28connecting pinsand
bearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:

20.12.86 OfficialJournaloftheEuropean Communities NoL362/15
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)HN62301P
MB831000
MB831124
TC531000P
or
—otheridentification markings relatingtoC-MOSROMscomplying withthe
abovementioned description7
ex85.21DII Programmable ,non-erasable ,read-onlymemories (PROMs)ofSchottkyTTLtechnology ,
withastoragecapacityof2Kbits,intheformofamonolithicintegratedcircuit,containedina
housingtheexteriordimensions ofwhichdonotexceed17x39mm,withnotmorethan
24connecting pinsorcontactareas,andbearing:
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
orfiguresandlettersorincludingoneofthosecombinations :
76LS03 27S12
27S13
28L22
28LA22
28L2XMFC5305
5306
5308
5309
53S240
53S241
54S570
54S571
5604
56247620
7621
82S114
82S130
82S131
93436
934466305
6306
6308
6309
63S240
63S241
6335
6336
7053
7058
74S570
74S57129613
29770
29771
38510 MB7115
MB7116
MB7117
MB7118
or
—otheridentification markingsrelatingtoPROMscomplying withtheabovementioned
description0
ex85.21DII Programmable ,non-erasable ,read-onlymemories (PROMs)withastoragecapacityof4Kbits,
intheformofamonolithic integratedcircuit,containedinahousingtheexteriordimensions of
whichdonotexceed17x39mm,withnotmorethan24connecting pinsor28contactareas
andbearing :
—anidentification markingeitherconsisting oforincludingoneofthefollowing
combinations offiguresorfiguresandletters:
CY7C225 18S42 29620 54S472 74S472
18S46 29621 54S473 74S473
18SA42 29622 54S474 74S474
18SA46 29623 54S475 74S475
29624 54S476 74S476
24S41 29625 54S477 74S477
24SA41 29626 54S572 74S572
29627 54S573 74S573
27S15 54740
27S25 3604 54741 7640
27S26 3624 7641
27S27 3625 5605 7642
27S28 5625 7643
27S29 38510 7644
27S30 6340 7645
27S31 5340 6341 7646
27S32 5341 63S440 7647
27S33 53S440 63RA4417648
53RA44163RS4417649
28L42 53RS44163S441

NoL362/16OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNo DescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)28L45 53S441 6348 82HS137
28L46 5348 6349 82HS147
28P42 5349 6350 82S115
28P45 5350 6351 82S136
28R45 5351 6352 82S137
28S4XFD 53522 6353 82S140
28SA41 5353 82S141
28S42 HM6641 82S142
28SA42 82S146
28S45 7054 82S147
28S46 7059
28SA46l 93438
7121 93448
7122 93452
7123 93453
7124
7125
7126
7226
or
—otheridentification markingsrelatingtoPROMscomplying withtheabovementioned
description 0
ex85.21DII Programmable ,non-erasable read-onlymemories (PROMs)withastoragecapacityof8Kbits,
intheformofamonolithic integratedcircuit,containedinahousingtheexteriordimensions of
whichdonotexceed17x39mm,withnotmorethan24connecting pinsor28contactpoints
andbearing :
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
andlettersorincludingoneofthosecombinations :
24S81 3628 74LS47882707 CY7C235
24SA81 74S2708 82708 CY7C281
24S86 5380 74S454 82HS185CY7C282
5381 74S455 82LS180
27S180 5388 74S478 82LS181
27S181 5389 74S479 82S180
27S185 53S840 82S181
27S35 53S841 7608 82S182
7680 82S183
28L85 54LS4787681 82S184
28L86 54S2708 7684 82S185
28P85 54S454 7685 82S2708
28R35 54S455 7686
28R85 54S478 7687 87S180
28S2708 54S479 7688 87S181
28S85 7689 87S184
28S86 6380 87S185
28SA86 6381 77S180 87S186
28S8XMFE 6388 77S181 87S187
6389 77S184
29623 63S840 77S185 93450
29630 63S841 77S186 93451
29631 77S187 93460
29632 7050 93461
29633 7055 TBPS81M93465
29634 7060 93466
29635 93L450
29636 7127 93L451
29637 7128
29650 7129 9460
29651 7130
29652 7131
29653 7132
7232

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/17
CCT
headingNoDescriptionRateof
autonomous
duty(%)
or ex85.21DII
(cont'd)—otheridentification markingsrelatingtoPROMscomplying withtheabovementioned
description0
ex85.21DII UV-erasable ,programmable ,read-onlymemories (EPROMs )withastoragecapacityof2K
bits,intheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed17x39mm,withaquartzwindowontheuppersurface
andbearing :
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
orincludingoneofthefollowingcombinations :
AMI702ADC
82140PP
or
—otheridentification markingsrelatingtoEPROMscomplying withtheabovementioned
description4
ex85.21DII UV-erasable ,programmable ,read-onlymemory (EPROM )equippedwithaprogrammable
input/outputsystem,withastoragecapacityof2Kx8bits,intheformofamonolithic
integratedcircuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
17x52mm,withaquartzwindowontheupperfaceandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
D8755A
TMP8755AC
or
—otheridentification markingsrelatingtomemoriescomplying withtheabovementioned
description0
ex85.21DII Electrically erasableprogrammable ,read-onlymemories(E2PROMs)withastoragecapacity
of4Kbits,intheformofamonolithic integratedcircuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed17x33mm,withnotmorethan24connecting pinsand
bearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
X2804AX2404 X24C04
or
—otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description0
ex85.21DII Electrically erasable,programmable ,read-onlymemories(E2PROMs )withastoragecapacity
of16Kbits,intheformofamonolithic integratedcircuit,containedinahousingtheexterior
dimensions ofwhichdonotexceed17x39mm,withnotmorethan32connecting pinsor
contactareasandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters:
AM2817A
X24C16
X2816A
52B13
52B13H
or
—otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description0

NoL362/18OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNo DescriptionRateof
autonomous
duty(%)
ex85.21DIIElectricallyerasable,programmable ,read-onlymemories(E2PROMs)withastoragecapacity
of64Kbits,intheformofamonolithicintegratedcircuit,containedinahousingtheexterior
dimensions ofwhichdonotexceed17x39mm,withnotmorethan32connectingpinsor
contactareasandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters:
MBM28C64
MBM28C65X2864A
MCM2864
52B33
52B33H
or
—otheridentification markingsrelatingtoE2PROMscomplyingwiththeabovementioned
description 0
ex85.21DIIElectrically erasable,programmable ,read-onlymemories(E2PROMs)withastoragecapacity
of128Kbits,intheformofamonolithicintegratedcircuit,containedinahousingtheexterior
dimensions ofwhichdonotexceed17X39mm,withnotmorethan32connecting pinsor
contactareasandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
X28128A
or
—otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description 0
ex85.21DII Electrically erasable,programmable ,read-onlymemories(E2PROMs)withastoragecapacity
of256Kbits,intheformofamonolithic integratedcircuit,containedinahousingtheexterior
dimensions ofwhichdonotexceed17X39mm,withnotmorethan32connecting pinsor
contactareasandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
28256
28C256
48C256
or
—otheridentification markingsrelatingtoE2PROMscomplying withtheabovementioned
description 0
85.21DIIStatic,random-access memoriesofTTLtechnology (TTLS-RAMs )withastoragecapacityof
1Kbitandanaccesstimenotexceeding45ns,intheformofamonolithic integratedcircuit,
containedinahousingtheexteriordimensions ofwhichdonotexceed16x30mm,withnot
morethan22connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingoneofthefollowing
combinations offigures
93422
93425
or
—otheridentification markingsrelatingtoTTLS-RAMscomplyingwiththeabovementioned
description 0

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/19
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Static,random-access memoriesofN-MOS (includingH-MOS )technology (N-MOSS-RAMs )
withastoragecapacityof1Kx4bitsandaccesstimenotexceeding70ns,intheformofa
monolithic integratedcircuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed8x23mm,withnotmorethan18connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
AM2149
PD2149
SY2149H
TMS2149
or
—otheridentification markings relatingtoN-MOSS-RAMscomplying withthe
abovementioned description 7
ex85.21DII Static,random-access memories ofC-MOStechnology (C-MOSS-RAMs),withastorage
capacityof4Kx1bit,amaximum accesstimenotexceeding70nsandastandbymodesupply
currentoflessthan1mA,intheformofamonolithic integrated circuit,contained inahousing
thedimensions ofwhichdonotexceed9x26mm,with18connecting pins,andbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
6147
MCM61L47
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Static,random-access memoryofC-MOStechnology (C-MOSS-RAM)withastoragecapacity
of2Kx8bitsandwithamaximumstandbypowerof0,005milliwattsat25°Cintheformofa
monolithic integrated circuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed17x33mmwithnotmorethan24connecting pinsandbearing :
—anidentification markingconsisting oforincludingoneofthefollowingcombination of
figuresandletters:
TC5516A
or
—otheridentification markings relatingtoC-MOSS-RAMs complying withthe
abovementioned description 7
ex85.21DII Static,random-access memoriesofN-MOS (includingH-MOS )technology (N-MOSS-RAMs )
withastoragecapacityof8Kbits,intheformofamonolithic integrated circuit,contained ina
housingtheexteriordimensions ofwhichdonotexceed17hx39mm,withnotmorethan
24connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:
8104
8108
8112
8114
81854008
4118
PD421
4801
or
—otheridentification relatingtoN-MOSS-RAMscomplying withtheabovementioned
description 0

NoL362/20 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DIIStatic,random-access memoriesofN-MOS (includingH-MOS)technology (N-MOSS-RAMs )
withastoragecapacityof256x4bitswithaccesstimenotexceeding25nanosecondsinthe
formofamonolithic integratedcircuit,containedinahousingtheexteriordimensions ofwhich
donotexceed17x39mm,withnotmorethan24connecting pinsandbearing:
—anidentification markingeitherconsisting oforincludingoneofthefollowing
combinations offiguresorfiguresandletters:
9122-25
91L22-25
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Static,random-access memories ofC-MOStechnology (C-MOSS-RAMs )withastorage
capacityof64Kbitsintheformofamonolithic integratedcircuit,containedinahousingthe
exteriordimensions ofwhichdonotexceed18x39mm,withnotmorethan32connecting
pinsorcontactareasandbearing :
—anidentification markingconsistingofthefollowingcombination offiguresandlettersor
includingoneofthosecombinations :
TC5564
TC5565C
HM6264P
HM6264LPMB8464
MCM6164
HM6264LFP
MB81C71
MB81C78
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Static,read/write,random-access memories ofN-MOS (includingH-MOS )technology
(N/H-MOSRAMs,static)withastoragecapacityof72Kbits,intheformofamonolithic
integrated circuit,contained inahousingwhosedimensions donotexceed10x39mm,with
notmorethan28connecting pinsandbearing :
—anidentification markingconsisting oforincludingthefollowingcombination offigures
andletters :
TMM2089
or
—otheridentification markingsrelatingtostatic,read/writememoriescomplying withthe
abovementioned description 0
ex85.21DII Monolithic integrated circuitconsistingofastatic,random-access memory (S-RAM )witha
storagecapacityof2Kbits,superimposed bit-for-bit onanelectrically erasable,
programmable ,read-onlymemory(E2PROM),contained inahousingtheexteriordimensions
ofwhichdonotexceed17x39mm,withnotmorethan28connecting pinsandbearing :
—anidentification markingconsisting ofthefollowing combinations offiguresand
letters :
X2002
or
—otheridentification markingsrelatingtoS-RAMsstackedonE2PROMscomplyingwiththe
abovementioned description 0

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/21
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Monolithic integrated circuitconsistingofastatic,random-access memory (S-RAM )with
astoragecapacityof4Kbits,superimposed bit-for-bit onanelectrically erasable,
programmable ,read-onlymemory(E2PROM),containedinahousingtheexteriordimensions
ofwhichdonotexceed17x39mm,withnotmorethan28connecting pinsandbearing :
—anidentification markingconsistingofthefollowingcombination offiguresandletters:
X2004
or
—otheridentification mmarkings relatingtoSRAMsstackedonE2PROMscomplying withthe
abovementioned description 0
ex85.21DII RandomaccessmemoriesofECLtechnology (ECL-RAMs )withastoragecapacityof4Kbits
andanaccesstimenotexceeding50nsintheformofamonolithic integratedcircuit,contained
inahousingwhoseexteriordimensions donotexceed11x32mm,withnotmorethan24
connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figures:
10470
10474
or
—otheridentification markingsrelatingtoECL-RAMs complying withtheabovementioned
description 0
ex85.21DII Fieldprogrammable arraylogics(PALs)ofbipolartechnology ,intheformofamonolithic
integrated circuit,withfusiblelinks,aprogrammable ANDarray,fixedORarray,notmore
than20inputsandnotmorethan10outputs,whetherornotwithregisters,contained ina
housingtheexteriordimensions ofwhichdonotexceed19x39mm,withnotmorethan28
connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombinations of
figuresandletters:
10H8 16A4 18L4
10L8 16C1
16H220C1
12H6 16L2 20L2
12L6 16L6 20L10
20R4
12L10 16L8 20X4
16R4 20X8
14H4 16R6 20X10
14L4 16R8
14L8 16X4
or
—otheridentification markingsrelatingtoPALscomplying withtheabovementioned
description 5
ex85.21DII Programmable ,non-erasable ,logiccircuits(fieldprogrammable logicarray)ofTTLSchottky
technology ,withnotmorethan48ANDfunctions ,notmorethaneightORfunctions ,andnot
morethan16inputs,intheformofamonolithic integratedcircuit,contained inahousingthe
exteriordimensions ofwhichdonotexceed17x39mm,withnotmorethan28connecting
pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:

NoL362/22 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)FP54AS839
FP54AS840
SN54LS333
SN54LS334
SN54LS335
SN54LS33682S100
82S101
93458
93459FP74AS839
FP74AS840
SN74LS333
SN74LS334
SN74LS335
SN74LS336
or
—otheridentification markingsrelatingtofieldprogrammable logicarrayscomplying with
theabovementioned description 5
ex85.21DII Semi-custom logicarray(Gatearrays)ofC-MOStechnology ,intheformofamonolithic
integrated circuit,withnotlessthaneightthousand2-inputNANDfunctions ,contained ina
housingtheexteriordimensions ofwhichdonotexceed39x39mm,withnotlessthan179
connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
MB66000VH
or
—otheridentification markings relatingtoC-MOSlogicarrayscomplying withthe
abovementioned description 0
ex85.21DII Videogatearraysprogrammed tocontrolgraphicsandmemory,intheformofamonolithic
integrated circuitcontained inahousingwhoseexteriordimensions donotexceed15x52
mm,withnotmorethan40connecting pinsandbearing :
—anidentification markingconsisting oforincluding t;hefollowing combination of
figures:
38300
o.r
—otheridentification markingsrelatingtoprogrammed gatearrayscomplying withthe
abovementioned description „ 0
ex85.21DII Single-chip microcomputers ,intheformofamonolithic integrated circuit,consisting ofan
arithmetical unitwithacapacityoffourbitsplusaread-onlymemory (ROM)withacapacityof
notlessthan18Kbitsandnotmorethan65Kbitsandarandom-access memory (RAM)witha
capacityofnotlessthan512bitsandnotmorethan4Kbits,contained inahousingtheexterior
dimensions ofwhichdonotexceed17x58mm,withnotmorethan80connecting pinsand
bearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
CD3200-3299 TP0310-03299 HD38800
TP0450-04599 HD38820
TMC0270-0279 TP0480-04899 HD44796
TMC0500-0599 TP0500-05999 HD44800
TMC0980-0989 HD44801
TMC1500-1599 HD44820
TMC1980-1999 HD44840
HD44860
HD614042
or
—otheridentification markingsrelatingtosingle-chip microcomputers complying withthe
abovementioned description 0
ex85.21DII Centralprocessing unitofN-MOS (includingH-MOS )technology (N-MOSCPU),intheform
ofamonolithic integrated circuitconsisting ofa16x16bitservicememory,a16x20bit
servicememory,a32x32bitservicememory,an8x8bitservicememory,a16bitregister,
two20bitregisters,an8bitregister,one12bitregister,a5bitcounterandtimingnetwork,
contained inahousingtheexteriordimensions ofwhichdonotexceed25x25mm,withnot
morethan68connecting pinsandbearing:

20.12.86 NoL362/23 OfficialJournaloftheEuropean Communities
CCT
headingNo.DescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
LSI-604041855
or
—otheridentification markingsrelatingtoN-MOScentralprocessing unitscomplying with
theabovementioned description
ex85.21DII Contention resolvinglocalareanetwork (LAN)controllers ,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
63x16mm,withnotmorethan48connecting pins,andbearing :
—anidentification markingeitherconsisting ofthefollowingcombinations offiguresor
figuresandlettersorincludingoneofthosecombinations :
MCM68590
AM7990
COM9026
WD2840
8001
8003
82586
82588
or
—otheridentification markingsrelatingtocontention resolvinglocalareanetworkcontrollers
complying withtheabovementioned description
ex85.21DII Hard-disccontrollers ofN-MOS (includingH-MOS )technology (N-MOSHDCs),intheform
ofamonolithic integratedcircuit,containedinahousingtheexteriordimensions ofwhichdo
notexceed15x53mm,withnotmorethan40connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:0
0
0
0HDC9224
PD7261WD1010
WD2010
WD5010
or
—otheridentification markings relatingtoN-MOSHDCscomplying withthe
abovementioned description
ex85.21DII Arithmetic-logic unitsofN-MOS (includingH-MOS )technology ,intheformofamonolithic
integratedcircuit,consistingofone32bitregister,one24bitregister,one4bitregister,twelve
1bitregisters,two16x24bitservicememories ,onelogicnetworkperforming arithmetic and
logicoperations ,decodifying logic,anerrordetectionandmanagement logic,one8bitcounter
andatimingnetwork,contained inahousingtheexteriordimensions ofwhichdonotexceed
23x82mm,withnotmorethan64connecting pinsandbearing :
—theidentification marking :
ALU0486
or
—otheridentification markings relatingtoarithmetic-logic unitscomplying withthe
abovementioned description
ex85.21DII LogiccontrolcircuitsofN-MOS (includingH-MOS)technology ,intheformofamonolithic
integrated circuit,consistingofone7bitregister,threetimers,onemultiplexer sequential and
combining networksintendedtoperformcontroloperations ,decodifying logic,errordetection
andmanagement logicandatimingnetwork,containedinahousingtheexteriordimensions of
whichdonotexceed23x82mm,withnotmorethan64connecting pinsandbearing:

NoL362/24OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNo DescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—theidentification marking :
MIC0482
or
otheridentification markingsrelatingtologiccontrolcircuitscomplying withthe
abovementioned description
ex85.21DIILogiccircuitofN-MOS (includingH-MOS)technology (N-MOSLC)servingasaclock
generatorforcentralprocessunit,mainmemoryandinput/outputinterfaces ,intheformofa
monolithic integratedcircuit,containedinahousingtheexteriordimensions ofwhichdonot
exceed25x25mm,withnotmorethan68connecting pinsandbearing:
anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
H108982 (MCC)
or
—otheridentification markingsrelatingtoN-MOSlogiccircuits(N-MOSLCs)complying
withtheabovementioned description
ex85.21DIISequencecontrolcircuitsofN-MOS (includingH-MOS)technology ,intheformofa
monolithic integratedcircuit,consistingofone32bitregister,three16bitregisters,one
16x16bitservicememory,one7x17bitlast-infirst-out(LIFO)memory,oneaddercircuit,
decodifying logic,prioritylogic,errordetectionandmanagement logic,one16bitmultiplexer ,
one8bitcounterandatimingnetwork,containedinahousingtheexteriordimensions ofwhich
donotexceed23x82mm,withnotmorethan64connecting pinsandbearing:
—theidentification marking :
CSS0484
or
—otheridentification markingsrelatingtosequencecontrolcircuitscomplying withthe
abovementioned description .0
0
0
0ex85.21DIIErrorcorrectionanddetectionunit(ECDU)ofbipolartechnology ,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
16x62mm,withnotmorethan48connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombinations of
figuresandletters:
2960
74F630
74F631
DP8400
74LS630
74LS631
or
—otheridentification markingsrelatingtoerrorcorrectionanddetectionunits(ECDUs)
complying withtheabovementioned description
ex85.21DIIErrordetectionandcorrectioncircuitofN-MOS (includingH-MOS)technologycapableof
detectingandcorrectingsinglebiterrorsanddetectingalldoublebiterrors,intheformofa
monolithic integratedcircuit,containedinahousingtheexteriordimensions ofwhichdonot
exceed25x25mm,withnotmorethan68contactareasandbearing:

NoL362/25 20.12.86 OfficialJournaloftheEuropean Communities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figures:
8206
or
—otheridentification markingsrelatingtoN-MOSerrordetectionandcorrection circuits
complying withtheabovementioned description
ex85.21DII Bursterrorprocessor (BEP)ofN-MOS (includingH-MOS )technology fordetectingand
correctingmultipleerrorsderivedfromalineofmagneticdiscs,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
16X54mm,withnotmorethan40connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
Z8065
AM9520
AM9521
or
—anyotheridentification markingrelatingtoN-MOSbursterrorprocessorcomplyingwith
theabovementioned description
ex85.21DII Electroniccontrolcircuitofbipolartechnology intheformofamonolithic integratedcircuitfor
thecontrolofdynamicrandom-access memories (D-RAMs),capableofmultiplexing address
andgenerating timing,containedinahousingtheexteriordimensions ofwhichdonotexceed
17x62mm,withnotmorethan48connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
DP8408
DP8409
MB14220
0
0
7
0or
—otheridentification markingsrelatingtoelectroniccontrolcircuitscomplying withthe
abovementioned description
ex85.21DII N-MOS (includingH-MOS )programmable communication interfaces (N-MOSPCIs),inthe
formofamonolithic integratedcircuit,containedinahousingtheexteriordimensions ofwhich
donotexceed17x39mm,withnotmorethan28connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
8251A
or
—otheridentification markingsrelatingtoN-MOSPCIscomplying withtheabovementioned
description
ex85.21DII Enhanced programmable communications interface (EPCI),intheformofamonolithic
integrated circuit,contained inahousingtheexternaldimensions ofwhichdonotexceed
17x39mm,withnotmorethan28connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figures :
2661
or
—otheridentification markingsrelatingtoEPCIscomplying withtheabovementioned
description

NoL362/26OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNo DescriptionRateof
autonomous
duty(%)
ex85.21DIISerialinterfaces ,capableofimplementing thedatastreamencoding,decodingandassociated
controlfunctionsforalocalareanetwork,intheformofamonolithic integratedcircuit,
containedinahousingtheexteriordimensions ofwhichdonotexceed16x33mm,withnot
morethan24connecting pinsandbearing :
—anidentification markingeitherconsistingofthefollowingcombination offiguresorfigures
andlettersoroneofthosecombinations :
AM7991
8002
8023
82501
COM9032
or
—otheridentification markingsrelatingtoserialinterfacedevicescomplying withthe
abovementioned description
ex85.21DII Stationdigitalinterfacecircuitforparallel/serialorserial/parallelconversionofdigitalsignals
intelephonesets,ofC-MOStechnology (C-MOSSTID),intheformofamonolithic integrated
circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed17x39mm,
withnotmorethan28connecting pins,andbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
WCC295G
or
—otheridentification markingsreferringtostationinterfacedigitalcircuitscomplying with
theabovementioned description
ex85.21DII N-MOS (includingH-MOS )programmable intervaltimers(N-MOSPITs),intheformofa
monolithic integratedcircuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed17X39mm,withnotmorethan24connecting pinsandbearing:
—anidentification markingeitherconsisting oforincludingoneofthefollowing
combinations offigures:0
0
0
08253 8254
or
—otheridentification markingsrelatingtoN-MOSPITscomplying withtheabovementioned
description
ex85.21DII Demodulator /tonedecoderofbipolartechnology forfrequencydecoding ,intheformofa
monolithic integratedcircuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed10x21mm,withnotmorethan14connecting pinsandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
XR2211
or
—otheridentification markingsrelatingtodemodulator tonedecoderscomplying withthe
abovementioned description
ex85.21DII C-MOSclockcircuits,intheformofamonolithic integratedcircuit,containedinahousingthe
exteriordimensions ofwhichdonotexceed16x54mm,withmorethan16connecting pins,
andbearing :

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/27
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
HI2060
HI2065
MSM5537
T3605
or
—otheridentification markingsrelatingtoclockcircuitscomplying withtheabovementioned
description
fortheproduction ofautomatictime-switches ,instrument panelclocksandclocksofasimilar
typeformotorvehicles (a) 0
ex85.21DII C-MOSclockcircuits,operatingfromasingle1,5Vpowersupply,withaliquidcrystaldisplay
(LCD)driver,intheformofamonolithic integratedcircuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed15x21mm,withnotmorethan56connecting pinsand
bearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
TC8219AFlor
—otheridentification markingsrelatingtoC-MOSclockcircuitscomplying withthe
abovementioned description 0
ex85.21DII Amplifier ,intheformofamonolithic integratedanaloguecircuit,contained inahousingthe
dimensions ofwhichdonotexceed2x4x4mm,withnotmorethan10connecting pinsand
bearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
V35
C05
or
—otheridentification markingsrelatingtoamplifiers complying withtheabovementioned
description
Thisamplifier isforthemanufacture ofproductsfallingwithinsubheading 90.19BI(a) 0
ex85.21DII Transceivers withfourchannels (Quadbus)ofALPSchottkytechnology withon-chipDtype
registersandinternalODD4bitparitygenerator/checker,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
9x28mm,withnotmorethan20connecting pinsandbearing:
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters :
AM2907
or
—otheridentification markingsrelatingtotransceivers (Quadbus)complying withthe
abovementioned description 0
ex85.21DII Four-linedriversofadvanced ,low-power Schottkytechnology ,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
20x7mm,withnotmorethan16connecting pinsandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
AM26LS29
AM26LS31
SN75172
SN75174
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL362/28 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)or
—otheridentification markingsrelatingtofour-linedriversofALPStechnology complying
withtheabovementioned description
ex85.21DII Universal Synchronous /Asynchronous Receiver/Transmitter (USART )ofC-MOS
technology ,intheformofamonolithic integratedcircuitcontained inahousingtheexterior
dimensions ofwhichdonotexceed17x39mm,withnotmorethan32connecting pinsor
contactareasandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
MSM82C51
or
—otheridentification markings relatingtoUniversal Synchronous /Asynchronous
Receiver/Transmitters complying withtheabovementioned descriipption
ex85.21DII 8bitmicroprocessor ofN-MOS (includingH-MOS )technology with16bitinternal
architecture ,intheformofamonolithic integratedcircuitconsistingofacentralprocessingunit
(CPU),atiminggenerator ,twoindependent DMAchannels,aprogrammable interrupt
controller ,threeprogrammable 16bittimers,programmable memoryandperipheral chip
select,aprogrammable waitstategeneratorandalocalbuscontroller ,containedinahousing
thedimensions ofwhichdonotexceed30x30mmwithnotmorethan68connecting pinsor
contactareas,andbearing :
—anidentification markingconsisting oforincludingthefollowingcombination of
figures:
80188
or0
7
7
0
0—otheridentification markings relatingtomicroprocessors complying withthe
abovementioned description
ex85.21DII 16bitmicroprocessor ofbipolartechnology ,intheformofamonolithic integrated circuit,
contained inahousingtheexteriordimensions ofwhichdonotexceed25x82mm,withnot
morethan68connecting pinsorcontactareasandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
AM29116 SBP9989
or
—otheridentification markings relatingtomicroprocessors complying withthe
abovementioned description
ex85.21DII 16bitmicroprocessor inN-MOS (includingH-MOS)technology ,intheformofamonolithic
integrated circuit,consistingofacentralprocessing unit(CPU),atiminggenerator ,two
independent DMAchannels,aprogrammable interruptcontroller ,threeprogrammable 16bit
timers,programmable memoryandexternalchipselectionlogic,aprogrammable waitstate
generatorwithbuscontrolunit,containedinahousingtheexteriordimensions ofwhichdonot
exceed30x30mm,withnotmorethan68connecting pinsorcontactareasandbearing:
—anidentification markingconsisting oforincludingthefollowingcombination of
figures:
80186
or
—otheridentification markings relatingtomicroprocessors complying withthe
abovementioned description

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/29
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII 16-bitmicroprocessor ofN-MOStechnology (includingH-MOS )intheformofamonolithic
integrated circuit,consistingofacentralprocessing unit(CPU),amemorymanagement and
protection unit(MMU)andarealaddressandvirtualaddressoperatingmodesystem(OSO),
contained inthehousingwhoseexteriordimensions donotexceed30x30mm,withnotmore
than68connecting pinsorcontactareasandbearing :
—anidentification markingconsisting oforincludingoneofthefollowingcombinations :
80286
or
—otheridentification markings relatingtomicroprocessors complying withthe
abovementioned description
ex85.21DII 32-bitmicroprocessor (MPU)ofC-MOStechnology intheformofamonolithic integrated
circuit,contained inahousingwhoseexteriordimensions donotexceed36x36mm,withnot
morethan114connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination :
MC68020
or
—otheridentification markingsrelatingtocircuitscomplying withtheabovementioned
description
ex85.21DII 32-bitmicroprocessor inC-MOStechnology ,intheformofahybridintegrated circuit,
consisting ofasinglesubstratelayeronwhicharemountedtwochips,comprising acentral
processing unit(CPU)andamemoryunit,theexteriordimensions ofwhichdonotexceed
16x55mm,withnotmorethan60connecting pinsandbearing :10
0
0
0—anidentification markingconsisting oforincluding thefollowing combination of
figures:
57-00000 57-19400
or
—otheridentification markings fordevicescomplying withtheabovementioned
description
ex85.21DII Floating-point arithmetic co-processor (FPU)ofC-MOStechnology ,intheformofa
monolithic integrated circuit,consisting ofeight80-bitregistersanda32-bitdatabus,
contained inahousingwhoseexteriordimensions donotexceed28x28mm,withnotmore
than80connecting pinsandbearing :
—anidentification markingconsisting oforincludingthefollowingcombination :
MC68881
or
—otheridentification markingsrelatingtocircuitscomplying withtheabovementioned
description
ex85.21DII NumericprocessorextensionunitofN-MOS (includingH-MOS )technology (N-MOSNPX)
containing notmorethan14registers,intheformofamonolithic integrated circuit,contained
inapackagetheexteriordimensions ofwhichdonotexceed15x52mm,withnotmorethan
40connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresorfiguresandletters:

NoL362/30 OfficialJournaloftheEuropeanCommunities 20,12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)8087 TX32081W
80287
or
—otheridentification markings ,relatingtoN-MOSNPXscomplying withthe
abovementioned description 0
ex85.21DII Floppy-disc dataseparator (FDDS),intheformofamonolithic integratedcircuit,containedin
ahousingtheexteriordimensions ofwhichdonotexceed27x8mm,withnotmorethan20
connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
FDC9216
FDC9216-B
WD9216-00
WD92C32
FDC9229T
FDC9229BT
or
—otheridentification markingsrelatingtoFDDS,complying withtheabovementioned
description0
ex85.21DII C-MOS-phoneme speechsynthesizer ,withasupplycurrentoflessthan10mA,intheformofa
monolithic integratedcircuit,containedinahousingtheexteriordimensions ofwhichdonot
exceed17x39mm,withnotmorethan28connecting pinsandbearing:
—anidentification markingeitherconsisting oforincludingoneofthefollowing
combinations offiguresandletters:
CM54104 CM54166N2LCD54123N2LSSI263
CM54145N2LCD54121N2LCD54147N2L
CM54146N2LCD54122N2LSC01
or
—otheridentification markingsrelatingtophonemespeechsynthesizers complyingwiththe
abovementioned description0
ex85.21DII Triplevideodigitaltoanalogueconverter (VDAC),eachchannelhavingacapacityofnotmore
than8bitswithamaximum conversion timeofnotmorethan25nanoseconds ,intheformofa
hybridormonolithic integratedcircuitwhetherornotincorporating threerandomaccess
memories (RAMs)eachwithastoragecapacityofnotmorethan2Kbits,contained ina
housingtheexteriordimensions ofwhichdonotexceed54x62mm,withnotmorethan61
connecting pinsandbearing:
—anidentification markingconsistingofoneofthefollowingcombinations oflettersand
figures:
VDAC444TDTDC1334
RGBDAC4THDAC34010
RGBDAC8EHDAC34020
RGBDAC8T
or
—otheridentification markingsrelatingtotripleVDACscomplyingwiththeabovementioned
description0
ex85.21DII Electronically adjustabledifferential amplifiersforatleastthefullrangeofsignalsfrom0tonot
lessthan400MHzintheformofamonolithic integratedcircuit,contained inahousingthe
exteriordimensions ofwhichdonotexceed11x11mm,withnotmorethan16connecting
pins,andbearing:

20.12.86 OfficialJournaloftheEuropean Communities NoL362/31
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingconsisting oforcontaining thefollowingcombination of
figures:
0078-10
or
—otheridentification markingsrelatingtoamplifierscomplying withtheabovementioned
description
ex85.21DII Static,random-access memoriesofbipolartechnology (bipolarSRAMs),intheformofa
monolithic integratedcircuitandwithastoragecapacityof64x9bits,containedinahousing
theexteriordimensions ofwhichdonotexceed16x40mm,withnotmorethan
28connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
82S09 MBM93419
or
—otheridentification markings relatingtobipolarSRAMscomplying withthe
abovementioned description
ex85.21DII 8bit(octal)dynamicmemorybipolardriverintheformofamonolithic integrated circuit
containedinahousingtheexteriordimensions ofwhichdonotexceed16X33mm,withnot
morethan20connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters:
AM2965
AM2966
or
—otheridentification markingsrelatingtodynamicmemorybipolardriverscomplying with
theabovedescription0
0
0
0
0ex85.21DII Businterfacecircuitsofbipolartechnology with9or10bitregisters,intheformofamonolithic
integrated circuit,containedinahousingtheexteriordimensions ofwhichdonotexceed
9x34mm,withnotmorethan24connecting pinsorcontactareasandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
numbers andletters:
AM29843
AM29844AM29821
AM29823
AM29824
or
—otheridentification markingsrelatingtoBUSinterfacecircuitswhichcomplywiththeabove
description
ex85.21DII Multiplebusinterfacecircuit(MultipleBusBuffer)oflowpowerSchottkytechnology for
interfacing theerrorcorrectionanddetectionunitsystemdatabusanddynamicrandomaccess
memory (D-RAM),intheformofamonolithic integratedcircuitcontainedinahousingthe
exteriordimensions ofwhichdonotexceed8x33mm,withnotmorethan24connecting pins
andbearing:
—anidentification markingconsistingoforincludingthefollowingcombination ofnumbers
andletters:
AM2961
or
—otheridentification markingsrelatingtoerrorcorrectionmultiplebusbufferswhichcomply
withtheabovedescription

NoL362/32OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNo DescriptionRateof
autonomous
duty(%)
ex85.21DIIStatusandshiftcontrolunitofbipolartechnology intheformofamonolithicintegratedcircuit,
contained inahousingtheexteriordimensions ofwhichdonotexceed16X57mmwithnot
morethan42connecting pins,andbearing:
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
AM2904
or
—otheridentification markingsrelatingtostatusandshiftcontrolunitscomplying withthe
abovedescription
ex85.21DII Amplifier ,intheformofamonolithic integratedanaloguecircuittheexteriordimensions of
whichdonotexceed3x3mmforuseinthemanufacture ofproductsfallingwithin
subheading 90.19BI(a)
ex85.21DII Textco-processor ,intheformofamonolithic integratedcircuit,containedinahousingthe
exteriordimensions ofwhichdonotexceed25x25mm,withnotmorethan68connecting
pins,andbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
C82730
or
—otheridentification markingsrelatingtotextco-processors complying withtheabove
description
ex85.21DII Single-chip-microcomputer ,intheformofamonolithic integratedcircuit,consistingofan
arithmetic-logic unitwithacapacityof8bitsplusanelectronic ,programmable ,read-only
memory (EPROM )UVerasablewithacapacityof32Kbitsandarandomaccessmemory
(RAM)withacapacityof1Kbit,contained inahousingtheexteriordimensions ofwhichdo
notexceed15x50mm,withaquartzwindowandnotmorethan40connecting
pinsandbearing :0
0
0
0
0—anidentification markingeitherconsistingofthefollowingcombination offiguresor
includingthiscombination :
8751 7742
or
—otheridentification markingsrelatingtosingle-chip microcomputers whichconformtothe
foregoingdescription
ex85.21DII Single-chip microcomputers inC-MOStechnology ,intheformofamonolithic integrated
circuitconsistingofanALUwithacapacityof32bitsplusaROMwithacapacityof24Kbits
andaRAMwithacapacityof2Kbits,containedinahousingtheexteriordimensions ofwhich
arenotlessthan30x30mm,withnotlessthan84connecting pinsorcontactareasand
bearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
MB8764
or
—otheridentification markingsrelatingtosingle-chip microcomputers complyingwiththe
abovementioned description
ex85.21DII Subscriber lineaudio-processing circuit(SLAC)withtwodigitalsignalprocessors ,an
analogue-digital converterandadigital-analogue converter ,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
17x39mmwithnotmorethan28connecting pinsandbearing :
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

20.12.86 NoL362/33 OfficialJournaloftheEuropeanCommunities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
AM7901
AM7905
or
—otheridentification markingsrelatingtoSLACscomplying withtheabovementioned
description
ex85.21DII Non-volatile memoryintheformofamonolithic integrated circuit,consisting ofaC-MOS
S-RAM,withacapacityof16Kbitsandinternalpowersupply,contained inahousingthe
exteriordimensions ofwhichdonotexceed19x36mm,withnotmorethan28connecting
pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
MK48Z02(B) DS1220Y
or
—otheridentification markingsrelatingtonon-volatile memories complying withthe
abovementioned description
ex85.21DII InputoutputcircuitofN-MOS (includingH-MOS )technology fordatacontrolequippedwitha
timingcontrolwithastaticrandomaccessmemory (S-RAM)withacapacityof128x8bits,in
theformofamonolithic integrated circuit,contained inahousingtheexteriordimensions of
whichdonotexceed16x54mm,withnotmorethan40connecting pinsandbearing:
—anidentification markingeitherconsistingofoneofthefollowingcombinations offigures
orlettersandfiguresorincludingoneofthosecombinations :
6532
CO10750
or7
7
0
0
0—otheridentification markingsrelatingtoinput-output controlcircuitscomplying withthe
abovementioned description
ex85.21DII Analogue-digital monolithic integrated circuitofbipolartechnology ,fordampingthe
oscillations ofsteppingmotorsduringthepositioning phasecontained inahousingwhose
exteriordimensions donotexceed18x39mm,withnotmorethan28connecting pinsand
bearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
letters:
STEDA
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description
ex85.21DII Analogue-digital monolithic integrated circuitusedtocontrolbrushlessmotors,maintaining
themataconstantspeed,contained inahousingtheexteriordimensions ofwhichdonotexceed
6x25mm,withnotmorethan18connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
MGA3015A
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description

NoL362/34 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Analogue-digital monolithic integratedcircuitofbipolartechnology ,capableofcontrolling
spindlemotorsandkeepingtheirspeedconstant,contained inahousingwhoseexterior
dimensions donotexceed9x25mm,withnotmorethan20connecting pinsand
bearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombinations of
figuresandletters:
UC1634 UC1633 UC3633 UC3634
or
—otheridentification markingsrelatingtoanalogue-digital integratedcircuitscomplying with
theabovementioned description
ex85.21DII Memorymanagement unitofN-MOS (includingH-MOS )technology (N-MOSMMU)witha
maximum addressing capacityof16Mbytes,intheformofamonolithic integrated circuit
contained inahousingtheexteriordimensions ,ofwhichdonotexceed25x82mm,withnot
morethan64connecting pinsor68contactareasandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
68451
TX32082W
or
—otheridentification markings relatingtoN-MOSMMUscomplying withthe
abovementioned description
ex85.21DII Memorycontroller ofC-MOStechnology ,intheformofamonolithic integrated circuit,
contained inahousingwhosedimensions donotexceed36x36mm,withnotmorethan132
connecting pinsandbearing :0
0
0
0—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
MC68851
or
—otheridentification markingsrelatingtocontrollers complying withtheabovementioned
description
ex85.21DII Electronic circuitofadvancedlowpowerSchottky (ALPS)technology fortheasynchronous
controlofsignallines(bus)andtheconversion ofalocalbusintoamultiplexed bus(BAM)in
theformofamonolithic integrated circuit,contained inahousingtheexteriordimensions of
whichdonotexceed37x13mm,withnotmorethan28connecting pinsandbearing :
—theidentification marking :
68452
or
—otheridentification markings relatingtoALPSBAMsconforming totheforegoing
description
ex85.21DII Cathode-ray tubecontroller (CRTC)ofN-MOS (includingH-MOS )technology intheformof
amonolithic integrated circuitcontained inahousingtheexteriordimensions ofwhichdonot
exceed62x25mm,withnotmorethan68connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/35
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)AM8052
D8275H
P8275H
or
—otheridentification markingsrelatingtoCRTCscomplying withtheabovementioned
description
ex85.21DII Displaycontrollerandcharactergenerator (DCCG)forliquidcrystaldotmatrixdisplaysystem
intheformofamonolithic integratedcircuitofC-MOStechnology containedinahousingthe
exteriordimensions ofwhichdonotexceed20x26mm,withnotmorethan60connecting
pins,andbearing:
—anidentification markingconsistingofthefollowingcombination offiguresandletters:
HD61830
or
—otheridentification markingsrelatingtoC-MOSDisplayController andcharacter
generators complying withtheabovementioned descriptions
ex85.21DII Videodigitaltoanalogueconverter (VDAC)withamaximum conversion timeof10
nanoseconds ,intheformofahybridintegratedcircuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed20x35mm,withnotmorethan24connecting pinsand
bearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters:
VDAC0405H
VDAC0605H
VDAC0805H
or
—otheridentification markingsrelatingtoVDACscomplying withtheabovementioned
description7
0
0
0
0ex85.21DII Interpolation pulsegeneratorofC-MOStechnology forcontrolling geometrical functions ,in
theformofamonolithic integratedcircuit,containedinahousingtheexteriordimensions of
whichdonotexceed17x39mm,withnotmorethan28connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
KM3701
or
—otheridentification markingsrelatingtointerpolation modulescomplying withthe
abovementioned description
ex85.21DII Static,randomaccessmemoryofC-MOStechnology (C-MOSS-RAM)withastoragecapacity
of32Kbits,intheformofamonolithic integratedcircuit,containedinahousingtheexterior
dimensions ofwhichdonotexceed18x39mm,withnotmorethan28connecting pinsand
bearing:
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
TC5532
or
—otheridentifying markingsrelatingtoC-MOSS-RAMcomplyingwiththeabovementioned
description

NoL362/36 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Controllerforservo-devices ofC-MOStechnology intheformofamonolithic integratedcircuit
containedinahousingtheexteriordimensions ofwhichdonotexceed17x54mm,withnot
morethan40connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
KM3702
or
—otheridentification markingsrelatingtocontrollers complying withtheabovementioned
description
ex85.21DII Functiongeneratorofbipolartechnology forthegeneration ofvariablewaveforms ,intheform
ofamonolithic integratedcircuit,contained inahousingtheexteriordimensions ofwhichdo
notexceed10x21mm,withnotmorethan16connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
XR2206
XR8038
or
—otheridentification markings relatingtofunctiongenerators complying withthe
abovementioned description
ex85.21DII Videoamplifierofbipolartechnology intheformofamonolithic integratedcircuit,contained
inahousingtheexteriordimensions ofwhichdonotexceed17x17mm,withnotmorethan
44connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:0
0
0
0702
703
or
—otheridentification markings relatingtovideoamplifiers complying withthe
abovementioned description
foruseinthemanufacture ofportablecolourtelevisioncameras (a)
ex85.21DII Amplifier ,ofbipolartechnology fortheamplification ofeitherreadorwritesignalsoffloppy
discs,intheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed11x29mm,withnotmorethan22connecting pinsand
bearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
XR2247
XR3470
or
—otheridentification markingsrelatingtoamplifiers complying withtheabovementioned
description
ex85.21DII Apertureandcolourtemperature balancecontrollerofbipolartechnology ,intheformofa
monolithic integratedanaloguecircuit,contained inahousingtheexteriordimensions ofwhich
donotexceed17x17mm,withnotmorethan44connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figures:
704
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/37
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)or
;—otheridentification markingsrelatingtodevicescomplying withtheabovementioned
description
foruseinthemanufacture ofportablecolourtelevisioncameras (a) 0
ex85.21DII ImpulsegeneratorinC-MOStechnology ,intheformofamonolithic integrateddigitalcircuit,
contained inahousingtheexteriordimensions ofwhichdonotexceed25X25mm,withnot
morethan68connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figures:
705
706
or
—otheridentification markings relatingtoimpulsegenerators complying withthe
abovementioned description
foruseinthemanufacture ofportablecolourtelevisioncameras (a) 0
ex85.21DII Staticrandomaccessmemoriesofbipolartechnology (bipolarS-RAMs )intheformofa
monolithic integratedcircuitconsistingofasubstratelayeronwhicharemountedeither1or2
chipseachhavingastoragecapacityof1Kbit,containedinahousingtheexteriordimensions
ofwhichdonotexceed13x13mm,withnotmorethan23connecting pinsandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figures:
770639
770823
5120360
7379769
or
—otheridentification markings relatingtobipolarS-RAMscomplying withthe
abovementioned description 0
ex85.21DII Staticmemoriesconsistingoftwostackedsubstratelayerswithoneortwostaticrandomaccess
memoriesofbipolartechnology (bipolarS-RAMs )intheformofmonolithic integratedcircuits,
eachwithastoragecapacityof1Kbitsandwithamaximum storagecapacityof4Kbits,
contained inahousingtheexteriordimensions ofwhichdonotexceed13x13mm,withnot
morethan23connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
770965
4599497
7379442
ex85.21DIIor
—otheridentification markings relatingtostaticmemories complying withthe
abovementioned description
Programmable digitalsignalsynthesizer ofC-MOStechnology with32frequencygenerators to
generateeightnoteseachandasimultaneous outputofupto160notesintheformofa
monolithic integrated circuitcontained inahousing,theexteriordimensions ofwhichdonot
exceed25x25mm,withnotmorethan68connecting pinsorcontactareas.0
Thehousingbears:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
letters:
MEG
or
—otheridentification markings relatingtodigitalsynthesizers complying withthe
abovementioned description 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

NoL362/38 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Repeatercircuit,ofbipolartechnologyfortheregeneration ofpulsecode-modulated signals,in
theformofamonolithic integratedcircuit,containedinahousingtheexteriordimensions of
whichdonotexceed10x21mm,withnotmorethan16connecting pinsandbearing:
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
XRC240
or
—otheridentification markings relatingtorepeatercircuitscomplying withthe
abovementioned description
ex85.21DII DynamicrandomaccessmemorycontrollerofN-MOS (includingH-MOS)technology
(N-MOSD-RAMcontroller )capableofmultiplexing addressesandgeneratingtiming,inthe
formofamonolithicintegratedcircuitcontainedinahousingtheexteriordimensionsofwhich
donotexceed17x62mm,withnotmorethan48connecting pinsor52contactareas,and
bearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
C8208
THCT4502
or
—otheridentification markingsrelatingtoN-MOSD-RAMcontrollers complyingwiththe
abovementioned description
ex85.21DII0
0
0
0Dualuniversalasynchronous receivertransmitter (DUART)ofMOStechnology ,intheformof
amonolithicintegratedcircuit,containedinahousingwhoseexteriordimensionsdonotexceed
15x52mm,withnotmorethan40connecting pinsandbearing:
—anidentification markingeitherconsisting oforincludingoneofthefollowing
combinations :
SCN2681
MC2681
or
—otheridentification markingsrelatingtocircuitscomplying withtheabovementioned
description
ex85.21DII C-MOSclock/calendarcircuit,incorporating aquartzcrystaloscillator ,independent timer
recordersandatimer,intheformofamonolithicintegratedcircuit,containedinahousingthe
exteriordimensions ofwhichdonotexceed7x20mmwithnotmorethan16connecting pins
andbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
MM58174A 58274
or
—otheridentification markingsrelatingtoclock/calendarcircuitscomplying withthe
abovementioned description
ex85.21DII C-MOSclockcircuitwithaudioandhour-count output,intheformofamonolithic integrated
circuitcontainedinahousingwhosedimensions donotexceed17x33mm,withnotmore
than24connecting pinsandbearing:
—anidentification markingeitherconsisting oforincludingoneofthefollowing
combinations offiguresandletters:

20.12.86 NoL362/39 OfficialJournaloftheEuropeanCommunities
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)SVM5530
7910
or
—otheridentification markingsrelatingtoclockcircuitscomplyingwiththeabovementioned
description0
ex85.21DII Programmable asynchronous communication elementcircuitinN-MOStechnology ,forthe
asynchronous transmission andreceptionofdata,intheformofamonolithic integratedcircuit,
containedinahousingtheexteriordimensions ofwhichdonotexceed16x54mm,withnot
morethan40connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
INS8250 NS16450
WD8250 NS16C450
or
—otheridentification markingsrelatingtoACEcircuitscomplying withtheabovementioned
description0
ex85.21DII Dynamic ,random-access read/writememoryofN-MOS (includingH-MOS)technology ,
(N-MOSD-RAMs )withastoragecapacityof64Kx4bits,intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
17x34mm,withnotmorethan20connecting pinsarrangedintwoparallellines(dual-in-line
package )andbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters
TMS4464 PD41254 PD41464 TMM41464
M5M4464HM50464 MB81464
or
—otheridentification markings relatingtoN-MOSD-RAMs .complying withthe
abovementioned description10
ex85.21DII Dynamicrandomaccessmemories (DRAMs),ofN-MOS(includingH-MOS)technology with
astoragecapacityof256Kbitsandaccesstimesnotexceeding150ns,intheformofa
monolithic integratedcircuit,contained inahousingtheexteriordimensions ofwhichdonot
exceed22x12mm,withnotmorethan20connecting pinswithzig-zagin-linepackageand
bearing :
—anidentification markingeitherconsistingoforincludingoneofthefollowingcombination
offiguresandletters:
PD41256V
MB81256P
HM56256ZP
or
—otheridentification markingsrelatingtocomponents complying withtheabovementioned
description 10
ex85.21DII Encoder/decodercircuitusingManchester code(MED)forthetransmission ofdatain
continuous fluxwitharepeatermodeinC-MOStechnology ,havinganoutputvoltageof4,5
volts,intheformofamonolithic integrated circuitcontained inahousingtheexterior
dimensions ofwhichdonotexceed16x33mm,withnotmorethan20connecting pinsand
bearing :
—anidentification markingconsistingorincludingthefollowingcombination offiguresand
letters :
HD6409

NoL362/40 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
or ex85.21DII
(cont'd)—otheridentification markingsrelatingtocircuitscomplying withtheabovementioned
description
ex85.21DII UV-erasable programmable read-only memories (EPROMs )intheformofamonolithic
integrated circuitwithastoragecapacityof512Kbits,contained inahousingtheexterior
dimensions ofwhichdonotexceed20x42mm,withaquartzwindowontheuppersurface.
Thehousingbears:
—anidentification markingconsistingorincludingthefollowingcombination offiguresand
letters:
AM27512 MBM27C512
or
—otheridentification markingsrelatingtoEPROMscomplying withtheabovementioned
description
ex85.21DII TTLlogicmodulesinbipolartechnology withnotmorethansixlogicfunctionsintheformofa
monolithic integrated circuitcontained inahousingtheexteriordimensions ofwhichdonot
exceed17x34mm,withnotmorethan24connecting pinsandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresorletters:
SH767369
SH998088
or
—anotheridentification markingrelatingtologicmodulesasdescribedabove0
0
0
0
7ex85.21DII Controlandinterfacecircuitforcentralprocessor (CPU-controller )ofC-MOStechnology in
theformofamonolithic integrated circuitcontained inahousingtheexteriordimensions of
whichdonotexceed25x25mm,withnotmorethan68connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
lettersandfigures:
FE2000
L1A0392
or
—otheridentification markingsrelatingtocontrolandinterfacing circuitscomplying withthe
abovementioned description
ex85.21DII Circuitforthecontroloffloppydiscs(floppydisccontroller )ofC-MOStechnology ,intheform
ofamonolithic integrated circuitcontained inahousingtheexteriordimensions ofwhichdo
notexceed16x62mm,withnotmorethan48connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
lettersandfigures:
L1A0519
G70360-33
MB89311
or
—otheridentification markings relatingtoadaptorcircuitscomplying withthe
abovementioned description
ex85.21DII Pulsecodemodulation (PCM)codecandfilterofNMOS(includingH-MOS )technology ,inthe
formofamonolithic integrated circuit,consisting ofafullyintegrated PCMcodecwith
transmit/receivefilters,contained inahousingtheexteriordimensions ofwhichdonotexceed
10x23mm,withnotmorethan16connecting pinsandbearing :

20.12.86 OfficialJournaloftheEuropeanCommunities NoL362/41
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
2916
2917
or
—eitheridentification markingsrelatingtoPCMcodecandfilterdevicescomplying withthe
abovementioned description
ex85.21DII 6-Channel monolithic integrated circuit (Read/writedataprocessor circuit)forthe
amplification andconversion ofreadsignalsandconversion ofwritesignalsforharddiscdrives,
contained inahousingtheexteriordimensions ofwhichdonotexceed19x38mm,withnot
morethan28connecting pinsorcontactareasandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination oflettersand
figures:
SSI540 SSI541
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description
ex85.21DII 8-Channel controlcircuitformaintaining aconstantelectromagnetic tractionforcewith
incorporated diodesandastoragecapacityof8bits,intheformofamonolithic integrated
circuit,ofC-MOStechnology contained inahousingtheexteriordimensions ofwhichdonot
exceed9x28mm,withnotmorethan22connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
UCN5801
or7
0
0
0
0—otheridentification markings relatingtocontrolcircuitscomplying withthe
abovementioned description
ex85.21DII 4-Channel controlcircuitformaintaining aconstantelectromagnetictractionforcewith
incorporated diodesandastoragecapacityof4bits,intheformofamonolithic integrated
circuitofC-MOStechnology ,contained inahousingtheexteriordimensions ofwhichdonot
exceed7x22mm,withnotmorethan16connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
UCN5813
or
—otheridentification markings relatingtocontrolcircuitscomplying withthe
abovementioned description
ex85.21DII Six-channel monolithic integrated circuitforthegeneration ofread/writesignalsforharddisc
drives,contained inahousingtheexteriordimensions ofwhichdonotexceed13x13mm,
withnotmorethan28connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination oflettersand
figures:
SSI117
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description

NoL362/42 OfficialJournaloftheEuropeanCommunities 20.12.86
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Programmable non-erasable read-onlymemories (PROMS )withastoragecapacityof16K
bits,intheformofamonolithic integrated circuitcontained inahousingtheexterior
dimensions ofwhichdonotexceed39x17mm,withnotmorethan32connecting pinsor
contactareasandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
27PS191A
29683 :MB7137
MB71387C245
7C2917C292
HM6616MB7133
MB7134MB7151
MB7152
or
—otheridentification markingsrelatingtoPROMScomplying withtheabovementioned
description
ex85.21DII Amplifiers forafullrangeofsignalsfrom0to60KHzintheformofamonolithic integrated
circuitcontained inahousingtheexteriordimensions ofwhichdonotexceed6x13x26
mm,withnotmorethan18connecting pinsandaleakageofnotmorethan0,3nAand
bearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
ISO100
or
—otheridentification markingsrelatingtoamplifiers complying withtheabovementioned
description ,foruseinthemanufacture oftelephoneexchanges (a)
ex85.21DII Singlechipmicrocomputer ofC-MOStechnology ,intheformofamonolithic integrated
circuit,consistingofanarithmetical logicunit(ALU)withanorganization of4bits,aread-only
memory (ROM)withastoragecapacityof2Kx8bits,adual-tone ,multi-frequency (DTMF)
generator ,arandomaccessmemory (RAM)withastoragecapacityof1Kbit,whetherornot
withanotherrandomaccessmemory (RAM)withastoragecapacityof512bits,containedina
housingwhoseexteriordimensions donotexceed16x54mm,withnotmorethan
42connecting pinsandbearing :0
0
0
0—anidentification markingconsistingofoneofthefollowingcombination offiguresand
letters:
T6978 TCM8301 TCM8302
or
—otheridentification markingsrelatingtosinglechipmicrocomputers complying withthe
abovementioned description
ex85.21DII StaticrandomaccessmemoriesofC-MOStechnology (C-MOSS-RAMs )intheformofa
monolithic integrated circuitwithastoragecapacityof16x4bits,anaccesstimenot
exceeding 35ns,contained inahousingtheexteriordimensions ofwhichdonotexceed
9x21mm,withnotmorethan16connecting pinsandbearing :
—anidentification markingeitherconsisting oforcontaining oneofthefollowing
combinations offiguresandletters:
CY7C189
CY7C190
CY74S189
CY54S189
CY27S03
CY27S07
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

20.12.86 OfficialJournaloftheEuropean Communities NoL362/43
CCT
headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII StaticrandomaccessmemoriesofC-MOStechnology (C-MOSS-RAMs )intheformofa
monolithic integrated circuitwithastoragecapacityof256x4bitsandanaccesstimenot
exceeding 60ns,contained inahousingtheexteriordimensions ofwhichdonotexceed
12x29mm,withnotmorethan22connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresorfiguresandletters:
CY7C122
CY93422 /93L422
or
—otheridentification markings relatingtoC-MOSS-RAMscomplying withthe
abovementioned description
ex85.21DII Electrically erasable,programmable read-onlymemories (so-calledE2PROMs),intheformof
anunmounted monolithic integrated circuit(chip)withastoragecapacityof16Kbits,usedin
themanufacture ofmicrowave systemsfortheidentification ofpersonsandobjects(a)
ex85.21DII Dynamicread/writerandomaccessmemoriesmanufactured inN-MOS (includingH-MOS )
technology (D-RAMs),intheformofamonolithic integrated circuit,consisting ofasubstrate
layerwithnotlessthantwoandnotmorethaneightchipshavingastoragecapacityof128,192
or256Kbitsandastoragecapacityofnotlessthan256Kbitsandnotmorethantwomegabits ,
contained inahousingwhosedimensions donotexceed30x30mm,withnotmorethan57
connecting pinsandbearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offigures:
6031587
60315916025841
6025843
6025856
60258586870392 *
6870393
68703957379172
7379174
7379176
73791810
0
0
0or
—otheridentification markings relatingtodynamicread/writememories ofthetype
described above
ex85.21DII Dualportdynamicrandomaccessmemory (D-RAM )ofN-MOS (including H-MOS )
technology ,withdataregistersandaserialreadoutputcontrol,withastoragecapacityof
256Kbitsintheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed13x39mm,withnotmorethan24connecting pinsand
bearing :
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
MB81461
PD41264
or
—otheridentification markingsrelatingtoD-RAMscomplying withtheabovementioned
description
ex85.21DII BusinterfacecircuitinC-MOStechnology ,intheformofamonolithic integrated circuit,forthe
controlofcommunication linescomprising anumericalbus,twoindependent receiversanda
transmitter consisting ofafirst-infirst-out (FIFO)memorycontained inahousingwhose
exteriordimensions donotexceed20x52mmwithnotmorethan44connecting pinsor
contactareasandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figuresandletters:
HS3282
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .

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headingNoDescriptionRateof
autonomous
duty(%)
or ex85.21DII
(cont'd)—otheridentification markingsrelatingtobusinterfacecircuitsandcorresponding tothe
abovementioned description
ex85.21DII Monolithic integrated circuitinN-MOStechnology (includingH-MOS )forthedisplayof
graphicsymbolsonacathode-ray tubeoperatinginstrokemode,containedinahousingwhose
exteriordimensions donotexceed28x61mm,withnotmorethan68connecting pinsand
bearing :
—anidentification markingconsistingoforincludingthefollowingcombinations offigures
andletters:
FCD28042277,96114899,96149135,96114898
or
—otheridentification markingsrelatingtocircuitscorresponding totheabovementioned
description
ex85.21DII Static,randomaccessmemories (S-RAMs )ofC-MOStechnology ,withastoragecapacityof
256Kbits,intheformofamonolithic integrated circuit,contained inahousingtheexterior
dimensions ofwhichdonotexceed39x17mm,withnotmorethan28connecting pinsand
bearing:
—anidentification markingeitherconsisting oforincluding oneofthefollowing
combinations offiguresandletters:
HM62256
PD43256C
TC55257P
or
—otheridentification markingsrelatingtoS-RAMscomplying withtheabovementioned
description0
0
0
0
0ex85.21DII Randomaccessmemories ofECLtechnology (ECL-RAMs )withastoragecapacityof
256x4bits,andaccesstimenotexceeding 8nsintheformofamonolithic integrated circuit,
contained inahousingthedimensions ofwhichdonotexceed11x32mm,withnotmorethan
24connecting pinsandbearing:
—anidentification markingeitherconsisting oforincluding ,thefollowingcombination of
figures:
10422
10422A
or
—otheridentification markingsrelatingtoECL-RAMs complying withtheabovementioned
description
ex85.21DII RandomaccessmemoriesofECLtechnology (ECL-RAMs )withastoragecapacityof16Kbits
andanaccesstimenotexceeding 15nsintheformofamonolithic integrated circuit,contained
inahousingthedimensions ofwhichdonotexceed9X27mm,withnotmorethan20
connecting pinsandbearing :
—anidentification markingeitherconsisting oforincludingthefollowingcombination of
figures:
10480
or
—otheridentification markingsrelatingtoECL-RAMs complying withtheabovementioned
description
ex85.21DII OctallinedriverofSchottky-TTL technology intheformofamonolithic integrated circuit,
contained inahousingtheexteriordimensions ofwhichdonotexceed14x14mm,withnot
morethan28connecting pinsorcontactareasandbearing:

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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
5170 NE5170 UC5170
or
—otheridentification markings relatingtooctallinedriverscomplying withthe
abovementioned description
ex85.21DII OctallinereceiverofSchottky-TTL technology intheformofamonolithic integratedcircuit,
containedinahousingtheexteriordimensions ofwhichdonotexceed14x14mm,withnot
morethan28connecting pinsorcontactareasandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
5180NE5180
5181NE5181
8510 8511
or
—otheridentification markings relatingtooctallinereceiverscomplying withthe
abovementioned description
ex85.21DII Interfacecircuitforthesynchronization ofdataflowfromaharddiskdrive,intheform
ofamonolithic integratedcircuit,containedinahousingwhosedimensions donotexceed
16x35mm,withnotmorethan28connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:0
0
0
0DP8462
or
—otheridentification markingsrelatingtointerfacescomplying withtheabovementioned
description
ex85.21DII HardDiscDataSeparator (HDDS)intheformofamonolithic integratedcircuit,contained
inahousingwhoseexteriordimensions donotexceed16x37mm,withnotmorethan
28connecting pinsandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
DP8465
DP8460-2
DP8460-3
DP8460-4WD10C20
HDC9226
or
—otheridentification markingsrelatingtodevicescomplying withtheabovementioned
description
ex85.21DII Hybridintegrated circuitforelectromagnet controlconsisting offourDarlington pairs
(oneDarlington =twotransistors withacascadeconnection )containedinahousinghaving
exteriordimensions whichdonotexceed12x27mmwithnotmorethan10connecting pins
andbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters :
TH3L10 TH3L20 PU4419

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headingNoDescriptionRateof
autonomous
duty(%)
or ex85.21DII
(cont'd)—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description
ex85.21DII InterfacecircuitofC-MOStechnology forsignalsbetweenperipheralharddiscmemoryunits
andcentralunitsintheformofamonolithic integratedcircuitcontainedinahousingwhose
exteriordimensions donotexceed28X53mmwithnotmorethan68connecting pinsor
contactareasandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
AIC500
AIC16000OMTI508
OMTI509
WD11COO
or
—otheridentification markings relatingtointerface circuitscomplying withthe
abovementioned description
ex85.21DII Sequential datacontrolcircuitofMOStechnology forinterfacebetweenaharddiscmemory
unitandthememorycontrolunitintheformofamonolithic integrated circuitofMOS
technology contained inahousingwhoseexteriordimensions donotexceed28x54mm,with
notmorethan68connecting pinsandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
AIC010
AIC100OMTI505
or0
0
0
0
0—otheridentification markings relatingtosequential circuitscomplying withthe
abovementioned description
ex85.21DII Encoder/decoderserialinterfacecircuitforharddiscdrives,intheformofamonolithic
integratedcircuitcontained inahousingwhoseexteriordimensions donotexceed17X37mm
withnotmorethan28connecting pinsorcontactareasandbearing:
—anidentification markingconsistingoforincludingoneofthefollowingcombinations of
figuresandletters:
OMTI507
OMTI5027AIC250
AIC270
or
—otheridentification markings relatingtointerfacecircuitscomplying withthe
abovementioned description
ex85.21DII 4-channel read/writemonolithic integrated circuitofbipolartechnology forcontrolling
magneticheadsinharddiskunits,contained inahousingwhoseexteriordimensions donot
exceed12x19mm,withnotmorethan28connecting pinsandbearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
SSI510
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description

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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Electroniccontrolcircuitforstaticmemorycontrol(S/RAM)withaddressmultiplexing and
pulsegeneration facility,intheformofamonolithic integrated circuitofMOStechnology
contained inahousingwhosedimensions donotexceed28x54mm,withnotmorethan
68connecting pinsorcontactareasandbearing :
—anidentification markingconsistingoforincludingoneofthefollowingcombination of
figuresandletters:
OMTI506
AIC300
or
—otheridentification markingsrelatingtoelectronic controlcircuitscomplying withthe
abovementioned description
ex85.21DII Semi-custom logicarrays(gatearrays)ofC-MOStechnology withmetalgates,intheformofa
monolithic integrated circuitwithanoperatingvoltageof12volts,withnotlessthan637
2-inputfunctions ,havingwithinthearrayadigitalcodeproduced byanelectronbeam,
contained inahousingwhoseexteriordimensions donotexceed29x11mm,withnotmore
than22connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingoneofthefollowingcombination
offiguresandletters:
FB215
or
—otheridentification markingsrelatingtogatearrayscomplying withtheabovementioned
description
ex85.21DII Pulsecodemodulation (PCM)codecofN-MOS (includingH-MOS )technology ,intheformof
amonolithic integrated circuit,consisting ofasampleandholdcircuitdigitaltoanalogue
converter ,comparator ,successiveapproximation registerandlogicfunctiontointerfacetoa
fullduplexPCMlink,containedinahousingwhoseexteriordimensions donotexceed11x28
mm,withnotmorethan22connecting pinsandbearing :0
7
7
7—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
2911A-l
or
—otheridentification markingsrelatingtoPCMcodecscomplying withtheabovementioned
description
ex85.21DII Pulsecodemodulation (PCM)transmit/receivefilterofN-MOS (including H-MOS)
technology ,intheformofamonolithic integratedcircuit,consistingoftwofiltersofaPCM
lineortrunktermination ,contained inahousingwhoseexteriordimensions donotexceed
10x21mm,withnotmorethan16connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
D2912A
or
—otheridentification markingsrelatingtoPCMfilterscomplying withtheabovementioned
description
ex85.21DII DynamicrandomaccessmemoriesofC-MOStechnology (C-MOSD-RAMs )withastorage
capacityof256Kbitsintheformofamonolithic integratedcircuit,contained inahousing
whoseexternaldimensions donotexceed17x34mm,withnotmorethan18connecting pins
andbearing :

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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII
(cont'd)—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
P51C256
P51C259
or
—otheridentification markings relatingtoC-MOSD-RAMs complying withthe
abovementioned description
ex85.21DII Analogue/digitalsignalconverter ,containing amplifiers ,D/AandA/Dconverters witha
supplyvoltageof12volts±10%andadigitalserialinterfacewithasynchronous
receiver/transmitter ,intheformofamonolithic integrated circuit,contained inahousing
whoseexternaldimensions donotexceed18x18mm,withnotmorethan44connecting pins
orcontactareasandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
AD75002
or
—otheridentification markingsrelatingtoprogrammable amplifiers withasynchronous
receiver/transmitter complying withtheabovementioned description
ex85.21DII Cathoderaytubecontroller (CRTC)ofbipolartechnology intheformofamonolithic
integrated circuitcontained inahousingwhoseexteriordimensions donotexceed15x55mm
withnotmorethan40connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
SCB2675
or0
0
0
0
0—otheridentification markingsrelatingtoCRTCscomplying withtheabovementioned
description
ex85.21DII Monochrome displaycontroller (MDC)ofC-MOStechnology ,intheformofamonolithic
integrated circuit,contained inahousingwhoseexteriordimensions donotexceed25x25
mm,withnotmorethan68connecting pinsandbearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombination :
01-01.00 551A
or
—otheridentification markingsrelatingtocircuitscomplying withtheabovementioned
description
ex85.21DII Programmable non-erasable read-onlymemories (PROMs)withastoragecapacityof32Kbits,
intheformofamonolithic integrated circuit,whoseexternaldimensions donotexceed
17x39mm,withnotmorethan32connecting pinsorcontactareasandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
63S3281 AM27S43 MB7141 MB7142
or
—otheridentification markingsrelatingtoPROMscomplying withtheabovementioned
description

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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Programmable advancedvideodisplaycontrollers (AVDCs)ofN-MOS(includingH-MOS)
technology intheformofamonolithicintegratedcircuit,containedinahousingwhoseexternal
dimensions donotexceed15x55mm,withnotmorethan40connecting pinsand
bearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
SCN2674
or
—otheridentification markingsrelatingtocontrollers complying withtheabovementioned
description
ex85.21DII ControlcircuitofTTL-technology intheformofamonolithic integratedcircuitforthefiringof
magneticprinthammers ,containedinahousingtheexteriordimensions ofwhichdonotexceed
7X20mmwithnotmorethan16connecting pinsandbearing :
—anidentification markingconsisting oforincludingthefollowingcombination of
figures:
801379-002
or
—otheridentification markings relatingtointegrated circuitscomplying withthe
abovementioned description
ex85.21DII Subscriber-connection units(crosspoint switches )withnotlessthanfourandnotmorethan12
switchesandanoperatingvoltageofatleast150V,intheformofahybridintegratedcircuit,
contained inahousingwhosedimensions donotexceed92x41mm,withnotmorethan94
connecting pinsandbearing:
—anidentification markingconsistingoforincludingthefollowingcombinations :
904
719
or7
0
0
0
0—otheridentification markingsrelatingtoacrosspoint switchcomplying withthe
abovementioned description
ex85.21DII 8x8bitmultiplieraccumulator (MAC)ofC-MOStechnology intheformofamonolithic
integrated circuit,contained inahousingtheexteriordimensions ofwhichdonotexceed
62x16mm,withnotmorethan48connecting pinsandbearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
numbers andletters:
ADSP-1008A
or
—otheridentification markingsrelatingtoMACscomplying withtheabovementioned
description
ex85.21DII Analoguetodigitalconverterforthecalculation oftheaveragevalueofvariablewave-forms ,in
theformofamonolithic integratedcircuit,containedinahousingtheexteriordimensions of
whichdonotexceed18x10mm,withnotmorethan14connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination ofnumbers
andletters:
AD536A
or
—otheridentification markingsrelatingtoconverters complying withtheabovementioned
description

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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII 12-bitanalogue-to-digital converterintheformofamonolithic integratedcircuitincorporating
avoltagereferenceandclock,containedinahousingtheexternaldimensions ofwhichdonot
exceed36x15mm,withnotmorethan28connecting pinsandbearing :
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
AD574A
or
—otheridentification markingsfordevicesrelatingtotheabovedescription 0
ex85.21DII 4-channeldigital-to-analogue converter ,eachchannelhavingacapacityof12bits,intheform
ofahybridintegratedcircuitcontainedinahousingtheexternaldimensions ofwhichdonot
exceed41x21mmwithnotmorethan28connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination ofnumbers
andletters:
AD390
or
—otheridentification markings relatingtomicroprocessors complying withthe
abovementioned description 0
ex85.21DII Buffermanagement controlprocessorinN-MOS(includingH-MOS )technology intheformof
amonolithic integratedcircuitcontainedinahousingwhoseexteriordimensions donotexceed
54x17mmwithnotmorethan40connecting pinsandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination offigures
andletters:
WD1015
or
—otheridentification markingsrelatingtobuffermanagement controlprocessors complying
withtheabovementioned description 0
ex85.21DII BuffermanagerandcontrolerofC-MOStechnology intheformofamonolithic integrated
circuitcontained inahousingwhoseexteriordimensions donotexceed31mmby31mmwith
notmorethan84connecting pinsorcontactareasandbearing :
—anidentification markingconsistingoforincludingthefollowingcombination :
WD11C00-22
or
—otheridentification markingsfordevicesrelatingtotheabovementioned description 0
ex85.21DII Thermocouple amplifierforinstrumentation controlattemperatures from0°to50°C,
incorporating analarmsystem,intheformofamonolithic integrated circuitcontained ina
housingtheexternaldimensions ofwhichdonotexceed20x8mmwithnotmorethan14
connecting pinsandbearing:
—anidentification markingeitherconsistingoforincludingthefollowingcombination of
figuresandletters:
AD594
AD595
or
—otheridentification markingsrelatingtothermocouple amplifiers complying withthe
abovementioned description 0

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headingNoDescriptionRateof
autonomous
duty(%)
ex85.21DII Temperature transducer intheformofamonolithic analogueintegratedcircuitcontainedina
housingtheexteriordimensions ofwhichdonotexceed6x4mmwithnotmorethanthree
connecting pinsandbearing:
—anidentification markingconsistingoforincludingthefollowingcombination ofnumbers
andletters:
AD590
or
—otheridentification markingsrelatingtotransducers complying withtheabovementioned
description 0
ex85.21E Deflectoryokeforcathoderaytubeswithanoperatingfrequencyofbetween31250Hzand
64000Hzincorporating aquadripolar magnet 0
ex85.23B Insulatedwindingwireofaluminium ofapurityofnotlessthan99,5%byweight,neither
lacquered ,varnishednorenamelled ,withatotalthicknessofnotlessthan0,15mmandnot
morethan0,16mm 0
ex90.02B Imagereversersmadeupfromanassemblyofopticalfibres 0
ex90.02B Adjustable lensunit,havingafocallengthofbetween115mmand140mm,adiameterofnot
lessthan120mmandnotmorethan130mm,andcomprising acombination ofbetweenfour
andeightglassormethacrylic lenses,eachlenscoatedonatleastonesidewithamagnesium
fluoridelayer,foruseinthemanufacture ofvideoprojectors (a) 0
ex90.02B Element,consistingoftworowsofrigidopticalfilamentsmountedbetweentwoplasticplates,
whosemaximum externaldimensions donotexceed276x20x5mm,notfittedwithcables
orconnectors ,foruseinthemanufacture ofphotocopiers (a) 0
ex90.10A Opticalunitforphotocopiers consistingoftworowsofrigidopticalmonofilament fibres
betweentwoplatesofplasticmaterial,atubelampandametalreflector,mountedonametal
structure whosemaximum dimensions donotexceed335x100x40mm 0
ex90.10A Unitforphotocopier ,notfittedwithanopticalfibreassembly ,consistingofahalogenlampand
metalreflectormountedinametalstructurewhosemaximum dimensions (withouttaking
accountofcablesandconnectors )donotexceed290X112X53mm 0
ex90.19BII Portablereadingapplianceforthevisuallyhandicapped inwhichafibreopticcameratransmits
amagnified imageontoadisplayscreen,andpartsthereof 3
ex92.12A Rigidmagneticdisks,prelubricated ,oxidetype,withahighcoercivity (800Oe),anouter
diameterof95mm,aninnerdiameterof25mmandathicknessof1,27mm 0
(a)ControloftheuseforthisspecialpurposeshallbecarriedoutpursuanttotherelevantCommunity provisions .