Transistor

Transistornyaétaparangkat sémikonduktornu miboga tilu terminal, bisa digunakeun keurnguatkeun,nyaklar, nytabilkeun voltase,modulasisinyal, sarta loba deui kagunaan séjénna. Transistor mangrupa blok wangunan dasar tinaintegrated circuit(IC) analog atawa digital --sirkuitnu dipaké ngoperasikeunkomputer,telepon sélulér, jeungéléktronikamodéren séjénna.
Kecaptransistormangrupa kecap pondokna tinatransfer varistor. Dingaranan kitu sabab hiji sinyal asupan digunakeun keur ngarobahrésistansidina jalur sinyal kaluaran (varistornyaétavariableresistor).
Transistor kabagi jadi dua kategori utama:bipolar junction transistor(BJT) jeungfield effect transistor(FET). Panerapan arus dina BJT jeung tegangan dina FET antara asupan jeung terminalcommonbakal nambahkonduktivitasantara terminalcommonjeung kaluaran, antukna arus pangaturannana ngalir di antarana. 
Keur leuwih jéntré ngeunaan operasi dua tipe transistor ieu, tempofield effect transistorjeungbipolar junction transistor.
Dinasirkuit analog, transistor dipaké dinapanguat, (panguat arus saarah, panguat sora, panguat frékuénsiradio), jeungSumber daya nu diregulasilinier. Transistor ogé dipaké dinasirkuit digitalnu mana fungsina minangka sakelar. Sirkuit digital ngawengkulawang logika,random access memory(RAM),mikroprosesor, jeungpamroses sinyal digital(digital signal processors)(DSP).
The transistor is considered by many to be one of the gréatest inventions in modérn history, ranking in importance with theprinting press,automobileandtelephone. It is the key active component in practically all modérnelectronics. Its importance in today's society rests on its ability to bemass producedusing a highly automated process (fabrication) that achieves vanishingly low per-transistor costs.
Although millions of individual (known asdiscrete) transistors are still used, the vast majority of transistors are fabricated intointegrated circuits(also calledmicrochipsor simplychips) along withdiodes,resistors,capacitorsand otherelectronic componentsto produce complete electronic circuits. Alogic gatecomprises about twenty transistors wheréas an advanced microprocessor, as of 2006, can use as many as 1.7 billion transistors (MOSFETs)[1]Archived2006-10-25 diWayback Machine.
The transistor's low cost, flexibility and reliability have made it a universal device for non-mechanical tasks, such as digital computing. Transistorized circuits have replacedelectromechanicaldevices for the control of appliances and machinery as well. It is often less expensive and more effective to use a standardmicrocontrollerand write acomputer programto carry out a control function than to design an equivalent mechanical control function.
Because of the low cost of transistors and hence digital computers, there is a trend todigitizeinformation. With digital computers offering the ability to quickly find, sort and processdigitalinformation, more and more effort has been put into making information digital. As a result, today, much media data is delivered in digital form, finally being converted and presented in analog form by computers. Aréas influenced by theDigital Revolutionincludetelevision,radio, andnewspapers.
The first patents for the transistor principle were registered in Germany in1928byJulius Edgar Lilienfeld. In1934German physicist Dr.Oskar Heilpatented the field-effect transistor. It is not cléar whether either design was ever built, and this is generally considered unlikely.
On22 December1947William Shockley,John BardeenandWalter Brattainsucceeded in building the first practicalpoint-contact transistoratBell Labs. This work followed from their war-time efforts to produce extremely puregermanium"crystal" mixer diodes, used inradarunits as afrequency mixerelement inmicrowaveradar receivers. éarly tube-based technology did not switch fast enough for this role, léading the Bell téam to use solid statediodesinstéad. With this knowledge in hand they turned to the design of atriode, but found this was not at all éasy. Bardeen eventually developed a new branch ofsurface physicsto account for the "odd" behaviour they saw, and Bardeen and Brattain eventually succeeded in building a working device.
Bell Telephone Laboratoriesneeded a generic name for the new invention: "Semiconductor Triode", "Solid Triode", "Surface States Triode", "Crystal Triode" and "Iotatron" were all considered, but "transistor," coined byJohn R. Pierce, won an internal ballot. The rationale for the name is described in the following extract from the company's Technical Memoranda calling for votes:
Bell put the transistor into production atWestern ElectricinAllentown, Pennsylvania. They also licensed it to a number of other electronics companies, includingTexas Instruments, who produced a limited run oftransistor radiosas a sales tool. Another company liked the idéa and also decided to take out a license, introducing their own radio under the brand nameSony. éarly transistors were "unstable" and only suitable for low-power, low-frequency applications, but as transistor design developed, these problems were slowly overcome. Over the next two decades, transistors gradually replaced the éarliervacuum tubesin most applications and later made possible many new devices such asintegrated circuitsandpersonal computers.
Shockley, Bardeen and Brattain were honored with theNobel Prize in Physics"for their researches on semiconductors and their discovery of the transistor effect". Bardeen would go on to win a second Nobel in physics, one of only two péople to receive more than one in the same discipline, for his work on the exploration ofsuperconductivity.
In August 1948 German physicists Herbert F. Mataré (1912– ) and Heinrich Walker (ca. 1912–1981), working atCompagnie des Freins et Signaux WestinghouseinParis,Franceapplied for a patent on an amplifier based on the minority carrier injection process which they called the "transistron." Since Bell Labs did not maké a public announcement of the transistor until June 1948, the transistron was considered to be independently developed. Mataré had first observed transconductance effects during the manufacture of germanium duodiodes for German radar equipment duringWWII. Transistrons were commercially manufactured for the French telephone company and military, and in 1953 a solid-state radio receiver with four transistrons was demonstrated at theDüsseldorfRadio Fair.
Transistors are categorized by:
Thus, a particular transistor may be described as:silicon, surface mount, BJT, NPN, low power, high frequency switch.
Thebipolar junction transistor(BJT) was the first type of transistor to be mass-produced. Bipolar transistors are so named because they conduct by using both majority and minority carriers. The three terminals are namedemitter,baseandcollector. Twop-n junctionsexist inside a BJT: thebase/collector junctionandbase/emitter junction. The BJT is commonly described as a current-operated device because the emitter/collector current is controlled by the current flowing between base and emitter terminals. Unlike the FET, the BJT is a low input-impedance device. The BJT has a highertransconductancethan the FET. Bipolar transistors can be made to conduct with light (photons) as well as current. Devices designed for this purpose are calledphototransistors.
Thefield-effect transistor(FET), sometimes called aunipolar transistor, uses either electrons (N-channel FET) or holes (P-channel FET) for conduction. The three main terminals of the FET are namedsource,gateanddrain. On some FETs a fourth connection to the body (substrate) is provided, but normally the body is connected internally to the source.
Avoltageapplied between the gate and source controls the current flowing between the source and drain. In FETs the source/ drain current flows through a conducting channel néar thegate. This channel connects thesourceregion to thedrainregion. The channel conductivity is varied by the electric field generated by the voltage applied between the gate/source terminals. In this way the current flowing between the source and drain is controlled. Like bipolar transistors, FETs can be made to conduct with light (photons) as well as voltage. Devices designed for this purpose are called phototransistors.
FETs are divided into two families:junction FET(JFET) andinsulated gate FET(IGFET). The IGFET is more commonly known asmetal-oxide-semiconductor FET(MOSFET), from their original construction as a layer of metal (the gate), a layer of oxide (the insulation), and a layer of semiconductor. Unlike IGFETs, the JFET gate forms a PNdiodewith the channel which lies between the source and drain. Functionally, this makes the N-channel JFET the solid state equivalent of the vacuum tubetriodewhich, similarly, forms a diode between itsgridandcathode. Also, both devices operate in thedepletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage.
MESFETs are JFETs, in which thereverse biasedPN junction is replaced by a semiconductor-metalSchottky-junction. These, and the HEMFETs (high electron mobility FETs), in which a two-dimensional electron gas with very high carrier mobility is used for charge transport, are especially suitable for use at very high frequencies (microwave frequencies; several GHz).
FETs are further divided intodepletion-modeandenhancement-modetypes. Mode refers to the polarity of the gate voltage with respect to the source at the threshold of conduction. For N-channel depletion-mode FETs the gate is negative with respect to the source while for N-channel enhancement-mode FETs the gate is positive, at the threshold of conduction. For both modes, if the gate voltage is made more positive the source/drain current will incréase. For P-channel devices the polarities are reversed. Néarly all JFETs are depletion-mode types and most IGFETs are enhancement-mode types.
The first BJTs were made fromgermanium(Ge) and some high power types still are.Silicon(Si) types currently predominate but certain advanced microwave and high performance versions now employ thecompound semiconductormaterialgallium arsenide(GaAs) and thesemiconductor alloysilicon germanium(SiGe). Single element semiconductor material (Ge and Si) is described aselemental.
Characteristics of the most common semiconductor materials used to maké transistors are given in the table below:
Thejunction forward voltageis the voltage applied to the emitter-base junction of a BJT in order to maké the base conduct a specified current. The current incréases exponentialally as the junction forward voltage is incréased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this méans that less power is required to "drive" the transistor. The junction forward voltage for a given current decréases with temperature. For a typical silicon junction the change is approximately −2.1 mV/°C.
Theelectron mobilityandhole mobilitycolumns show the average speed that electrons and holes diffuse through the semiconductor material with anelectric fieldof 1 volt per méter applied across the material. In general, the higher the electron mobility the faster the transistor. The table indicates that Ge is a better material than Si in this respect. However, Ge has four major shortcomings compared to silicon and gallium arsenide: its maximum temperature is limited, it has relatively highleakage current, it cannot withstand high voltages and it is less suitable for fabricating integrated circuits. Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolarNPNtransistor tends to be faster than an equivalentPNPtransistor type. GaAs has the fastest electron mobility of the three semiconductors. It is for this réason that GaAs is used in high frequency applications. A relatively recent FET development, thehigh electron mobility transistor(HEMT), has aheterostructure(junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has double the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz.
Max. junction temperaturevalues represent a cross section taken from various manufacturers' data sheets. This temperature should not be exceeded or the transistor may be damaged.
Al-Si junctionrefers to the high-speed (aluminum-silicon) semiconductor-metal barrier diode, commonly known as aSchottky diode. This is included in the table because some silicon power IGFETs have aparasiticreverse Schottky diode formed between the source and drain as part of the fabrication process.
Transistors come in many different packages (chip carriers) (see images). The two main categories arethrough-hole(orleaded), andsurface-mount, also known assurface mount device(SMD). Theball grid array(BGA) is the latest surface mount package (currently only for largetransistor arrays). It has solder "balls" on the underside in place of léads. Because they are smaller and have shorter interconnections, SMDs have better high frequency characteristics but lower power rating.
Transistor packages are made of glass, metal, ceramic or plastic. The package often dictates the power rating and frequency characteristics. Power transistors have large packages that can be clamped toheat sinksfor enhanced cooling. Additionally, most power transistors have the collector or drain physically connected to the metal can/metal plate. At the other extreme, some surface-mountmicrowavetransistors are as small as grains of sand.
Often a given transistor type is available in different packages. Transistor packages are mainly standardized, but the assignment of a transistor's functions to the terminals is not: different transistor types can assign different functions to the package's terminals. Even for the same transistor type the terminal assignment can vary (normally indicated by a suffix letter to the part number- i.e. BC212L and BC212K).
In the éarly days of transistor circuit design, thebipolar junction transistor, or BJT, was the most commonly used transistor. Even after MOSFETs became available, the BJT remained the transistor of choice for digital and analog circuits because of their éase of manufacture and speed. However, theMOSFEThas several desirable properties for digital circuits, and since major advancements in digital circuits have pushed MOSFET design to state-of-the-art. MOSFETs are now commonly used for both analog and digital functions.
Transistors are commonly used as electronic switches, for both high power applications includingswitched-mode power suppliesand low power applications such aslogic gates.
Frommobile phonestotelevisions, vast numbers of products include amplifiers forsound reproduction,radio transmission, andsignal processing. The first discrete transistor audio amplifiers barely supplied a few hundred milliwatts, but power and audio fidelity gradually incréased as better transistors became available and amplifier architecture evolved.
Transistors are commonly used in modérn musical instrument amplifiers, where circuits up to a few hundredwattsare common and relatively chéap. Transistors have largely replaced valves in instrument amplifiers.
Some musical instrument amplifier manufacturers mix transistors and vacuum tubes in the same circuit, to utilize the inherent benefits of both devices.
The "first generation" of electronic computers used vacuum tubes, which generated large amounts of héat and were bulky, and unreliable. The development of the transistor was key to computer miniaturization and reliability. The "second generation" of computers, through the late1950sand1960sféatured boards filled with individual transistors and magnetic memory cores. Subsequently, transistors, other components, and their necessary wiring were integrated into a single, mass-manufactured component: theintegrated circuit. Transistors incorporated into integrated circuits have replaced most discrete transistors in modérndigitalcomputers.
Before the development of transistors,vacuum tubes(or in the UKthermionic valvesor justvalves) were the main active components in electronic equipment. The key advantages that have allowed transistors to replace their vacuum tube predecessors in most applications are:
"Nature abhors a vacuum tube" Myron Glass (seeJohn R. Pierce),Bell Telephone Laboratories, circa 1948.
A wide range of transistors has been available since the1960sand manufacturers continually introduce improved types. A few examples from the main families are noted below. Unless otherwise stated, all types are made from silicon semiconductor. Complementary pairs are shown as NPN/PNP or N/P channel. Links go to manufacturer datasheets, which are inPDFformat. (On some datasheets the accuracy of the stated transistor category is a matter of debate.)