The chemical vapor deposition of cobalt silicide represents a potentially attractive way to form metallization contracts to transistors in under future design rules for silicon-based integrated circuits. We are investigating the feasibility of this technology from the perspective of surface chemistry, with a focus on issues of substrate consumption and selectivity with respect to silicon oxides. Sematech Chemical vapor deposition of titanium silicide is being investigated for metallizing future generations of integrated circuits. Based on ultrahigh-vacuum kinetic studies, we have developed a quantitative predictive model for growth, and have confirmed potential growth conditions in real deposition experiments. This work represents the first such optimization performed based on fundamental kinetic surface studies in any adsorption system of practical interest.
Work now focuses on bringing the process into suitable form for large-scale production.
In this study, we look at the role of interparticle forces in determining rates of drying and compaction in slurries. Conditions resulting in cracking are explored with the goal of generating dense, uniform, crack-free green bodies. Aqueous polyurethane dispersions are of growing significance in the castings technologies where there is a need to reduce volatile organic emissions. In this study, we characterize dispersion flow properties as a function of ionic strength and polyurethane weight fraction. In this investigation we examine the flow properties of weakly flocculated suspensions.