A technological validation of all concepts suggested forbids itself because of the enormous financial costs as well as because of time being precious when persevering with maintaining leadership.
Similar considerations apply also to development in bipolar technology.
As, device simulators cannot be used for predictive simulations when they are based on wrong dopant distributions, the success of TCAD depends crucially on the ability of process simulation to accurately simulate dopant profiles after annealing steps. Up to now, development of process simulation models in Europe has been done in a largely piecemeal way. Academic institutions have typically focused in isolation on specific physical aspects, while industry has concentrated on modelling processes currently under development. This cautious and pragmatic approach has limited the development of predictive models and simulation tools. The project will avoid these limitations and bring together specialists in solid-state physics, materials science, and electronic engineering, with extensive experience in mathematical modelling and computer simulation, as well as processing and measurement of silicon devices.