Dr. Schenk described the modeling of tunneling through ultra-thin gate oxides. Quantum mechanical effects become very important for such dielectric films. Dr. Schenk presented data that showed quantum oscillation effects in the current-voltage relations. He has developed a pseudo-barrier method that is computationally faster than numerically solving the Schrodinger equation and that gives excellent agreement with the results of Schrodinger's equation for oxide thickness in the range of 0.5 nm to 5 nm. The Internet is expected to play a large role in creating and supporting a new distributed community of researchers.
Work is in progress to explore several elements of networking technology.
These elements include help exchange, fabrication facilities database, collaboratory, process repository, remote simulation, remote process equipment, remote microscope, and an Electron TCAD Journal. Based on the Kick-Out Mechanism. This study clarifies the essential parameters for B diffusion. With the scaling down of silicon devices, the simulation of diffusion profiles in silicon is essential to the fabrication of shallow junctions. Currently available simulations of B diffusion use several parameters which are not practical for fitting to experimental situations.