A technological validation of all concepts suggested forbids itself because of the enormous financial costs as well as because of time being precious when persevering with maintaining leadership.
Similar considerations apply also to development in bipolar technology.
Therefore, because even the most advanced device simulators cannot be used for predictive simulations when they are based on wrong dopant distributions, the success of TCAD depends crucially on the ability of process simulation to accurately simulate dopant profiles after annealing steps. To illustrate their industrial relevance, they are the second goal out of 15 major TCAD priorities for process integration set out in the US National Semiconductor Technology Roadmap. Up to now, development of process simulation models in Europe has been done in a largely piecemeal way. Academic institutions have typically focussed in isolation on specific physical aspects, while industry has concentrated on modeling processes currently under development. This cautious and pragmatic approach has limited the development of predictive models and simulation tools.