The study of impurities and defects in semiconductors, the design and operation of semiconductor lasers are among the current research interests of this group. Semiconductor studies include the exploration of the properties of impurities in silicon, indium phosphide and gallium arsinide, and optoelectronic applications of low dimensional semiconductor structures.
Spectroscopic techniques constitute the main theme of the research.
High resolution spectrometers, together with lasers and cryogenic facilities enable detailed information to be gathered concerning the effects of trace impurities on the properties of semiconductors. The group also possesses a facility for recording photoluminescence wafer maps at low temperatures, which enables material and process uniformity to be studied. S.E. Daly, E. McGlynn, and M.C. DoCarmo, Semi-Cond. M.O. Henry, S.E. Daly, C.A. Freehill, E. McGlynn, C. McDonagh, E. Alves, J.C. Soares, D. Forkel. Poster presentation at Oxygen 96, NATO Advanced Research Workshop on the early Stages of Oxygen Precipitation in Silicon, Exeter March 26-29, 1996.