A long channel is easy, but the short channel effect can be a big problem, and that requires very good isolation technology. The issue is process integration. The European research community also has had a long interest in strained silicon, partly as an alternative to gallium arsenide. And there is much interest in the approach for MOS devices, to get higher static performance when we get to the limits of scaling. This is a very expensive, complicated process.
Some people have the conception that getting more performance involves a fancy process.
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