MJ Paisley, RF Davis, J. Cryst. Figure 1 . Surface reconstruction and transitions between different ordering with GaN thickness and growth rate as parameters. The maximum thickness for the transition indicates the border between nitrogen and gallium rich growth. Figure 2a .
Trenches can be seen on the surface, however, the area in between is smooth.
Figure 2b . Both the layer surface and the GaAs substrate are shown, where part of the layer has been peeled off. Figure 2c . The surface of the GaAs substrate is shown, revealing polycrystalline structure with hollows, where the GaN layer has been peeled off. Figure 2d .