This research is open only to US citizens. The Electronics Technology Division of NRL has a research opportunity on the physics of failure in electronic devices. Basic failure mechanisms include studies in GaAs, InP, and other compound semiconductor based devices, with emphasis placed on metal semiconductor interdiffusion, heterojunction interdiffusion, field assisted ionic migration, and hot electron induced subsurface burnout.
Research also includes basic radiation effects.
A complete failure analysis laboratory is available for studying the physics of failure of electronic devices. Physics You may use the following form to add this opportunity to your database or check all the opportunities you have saved in your database. To do that, you need to provide the correct username and password first.