Capable of maintaining excellent gain at VCE voltages as low as 1 V, the BFG403W is ideal for use as a low noise amplifier in 900-MHz pocket pager receivers, where it can achieve noise figures as low as 1 dB. The two medium power transistors in the range are the BFG480W and BFG21W, which have their maximum fT values at collector currents of 80 mA and 250 mA respectively. Both devices are suitable for use as driver stages in the RF power amplifiers of cellular telephones. The BFG21W, in combination with a BFG425W, is capable of delivering the 500 mW output power required in DECT telephones. With the BFG21W operating at a slightly higher quiescent current, the amplifier is ideal for use in handsets that need excellent linearity performance, such as those designed for the Japanese PHS system. At the same time, their top-side collector construction reduces series feedback and allows heat to be transferred via the emitter lead frame directly into the pc board's ground plane.
Samples are available now.
The group's three main areas of expertise are RF products for mobile communications, video amplifiers for monitors and CATV applications, power semiconductors for automotive, industrial, lighting and EDP applications, and commodity semiconductors with a broad range of diodes and transistors. This broad product range makes the Discrete Semiconductors Business Group a global supplier to all major segments of the electronics industry. Sales offices are located in all major markets around the world and are supported by systems labs. All rights reserved. Terms of use .