However, it isn't very volatile. Temperatures over 100 C are necessary to transport significant amounts of the vapor, necessitating the use of heated plumbing and chamber walls. Direct liquid injection for metering is commonly employed. The oxide film is readily deposited at 400-450 C in oxygen. Film thickness used is aroiund 10 nm, so high rates are unnecessary.
Uniformity is almost wholly dependent on temperature control.
Conformality is excellent. The nitride layer is resistance to oxidation and has a higher dielectric constant than oxide. If polysilicon is deposited directly onto the tantalum oxide layer, increased electrical leakage is observed after annealing. The deposition method of the TiN is also of importance. Sputtered TiN fails to protect the edges of the post, leading to sporadic leakage problems.