A suggested model is proposed correspondingly. The increase of annealing temperature resulted in the decomposition of Ni 3 Se 2 through the reaction with Ge. The change of the Schottky barrier height strongly depended on the annealing temperature. At higher annealing temperature, the Schottky barrier height increased and it was mainly due to the thermal decomposition of ZnSe. The second modification consisted of the desorption of oxygen from the diamond surface using a heat treatment in vacuum and cool down in purified hydrogen.
Te is studied, as a function of original doping level and of the concentration of mercury.
These forms equilibrate, at room temperature, within a few seconds, something that can be understood by postulating silver-mercury complex formation. If both forms of silver are bound to mercury, then this hypothesis explains the strong influence of mercury content on the diffusion behavior. We obtained contact resistance and leakage current with the tungsten nitride barrier layer comparable to those with conventional collimated TiN films. We show that, for this method which requires only relatively light experimental equipment, a nonconsuming computational time interpretation can be set up within a quite satisfactory degree of accuracy.