Following is a more detailed description of one cell design based on this concept.
Pressure is above atmospheric, optimum pressure being determined by experiment.
Hydrogen nuclei absorbed into the interface between the metallic film and surface of the N-type semiconductor react to drive excess electrons across the junction to the P side and out to the external circuit. These are heavily - doped tunnel diodes having less electrical resistance than other impurity semiconductors. It is proposed here that the nuclear energy released will excite electrons in the semiconductor from the valence band into the conduction band, at a worthwhile efficiency, thus generating an excess electrical potential. That is, when r7 Current from the cell divides at C during normal output.