This program investigates the synthesis and growth of semiconductor materials. Both bulk growth and epitaxial growth are pursued. Of particular emphasis are wide bandgap semiconductor materials such as diamond, silicon carbide, and the group III nitrides.
Novel growth processes as well as conventional epitaxial approaches are pursued.
Of particular importance is the compliant substrate technology for emerging semiconductor crystals for which native substrates are non-existent. Approaches include ab initio first principles calculations, functional density theory, Monte Carlo simulations, and molecular dynamic simulations.