We succeeded to form silicon nanopillars in the specified position by arranging metal clusters with electron beam lithography based on the above-mentioned phenomenon. A higher magnetoresistance than in the past was achieved in a magnetic field as low as 0.4 tesla. This is applicable to devices using spin, switches using magnetic field, or hysteresis-based memory. This research leads the world in this field. It is possible to realize industry catalyst with higher efficiency than that of present, if catalyst having much five-coordinated titanium can be made.
Procedures are as follows.
A couple of atomic layers are formed on a clean silicon surface and then electron beam is applied to them. Oxide film of the exposed part peels off and the underlying silicon surface appears creating a small window. In this situation, germanium is evaporated to create three atomic layers and they are thermalized. Germanium atoms are attracted to the window and an island with 10nm diameter is formed due to self-organizing effect. The oxide films evaporate during thermilization process and a germanium island remains on the small window of the silicon surface.