The research involves investigation of SiC device structures for high temperature gas sensing. Candidates should have a Ph.D. in electrical engineering, condensed matter physics or materials science with a firm background in semiconductor device physics. Background should include experimental analysis of electronic devices, materials characterization and microfabrication techniques. Click here for details. The duration will be a minimum of 10 weeks, preferably 12.
Pay is based on the year completed in school and what degree is being pursued.
If a few students want to group together to work out some research projects, this can be arranged. For more information, contact Dr. Martin Herbordt Dept. Click here for further details. We provide a lively, creative and challenging work environment where both individual accomplishment and team performance are rewarded. We offer an attractive salary and benefits package that includes profit sharing.