Mark Law, Univ. It has been shown that the thermal oxidation of polysilicon cannot be explained by the same theory used for describing oxidation of single crystal Si. However, a general observation is that the parabolic rate constant and the linear rate constant arevery similar for poly and single crystal. So, the Deal-Grove model gets you in the ballpark even if it's not correct. I know of no database available.
Most companies develop their own data that represents their poly process.
In my years of assisting people with their TCAD simulation problems, I've found that a large percentage of those problems were grid related. That is, a rough simulation can often provide you with most of the information you need. Similarly, it is easier to do a rough comparison of two processes than it is to simulate a single process exactly. Actually, an exact simulation can be quite involved. An advantage of qualitative simulation is that fewer grid points can be used, resulting in reduced execution times.