Progress in this field is closely related to success in growing epitaxial layers and heterostructures. Optimization of the growth process using these techniques is a key issue of many recent studies.
Molecular nitrogen interacts poorly with the surfaces of nitrides.
Desorption is delayed despite of the higher volatility of nitrogen compared with other group V molecular species. Using this assumption, we develop a quasi-thermodynamic approach which allows the trends in nitride MBE to be modeled, along with the prediction of the growth conditions where extra liquid phase appears on the surface. We do not distinguish between the states of the atoms in the bulk of the crystal and the atoms chemisorbed in the adsorption layer. This simplification is workable if the exchange reaction between the crystal and adsorption layer is not the limiting step in the growth or evaporation of the material. It is known that N 2 poorly chemisorbs on the surfaces of nitrides.