Optical microscopy and electron microprobe analyses provided feedback on crystalline homogeneity. In vertical Bridgman and Czochralski growth of stoichiometric electronic materials such as InSb, GaSb, and GaAs, growth from stoichiometric melts is commonly desired to achieve high quality. Off-stoichiometric growth is considered significant in the quest to understand transport phenomena leading to the observed sporadic inclusions. Here we apply radiographic interface visualization and calibrated interface temperature measurements to study growth of InSb from off-stoichiometric melts. The crystals are analyzed for structure and chemical segregation.
Results indicate concentration boundary layer formation in the melt ahead of the interface.
Sb 0.2 Single Crystal Abstract InBi 0.8 Sb 0.2 single crystals have been grown by zone melting method. Traingular features have been obtained on the free surface of the as grown crystal. A new dislocation etchant based on nitric acid has been found to give reproducible etch-pitting on the cleavage surface. Standard tests for a dislocation etchant have been carried out and results are reported. The layer composition was studied by microprobe analysis on the surface of the structure cross-section.