To counteract this the physical distance between the anode and cathode is increased by increasing the size of the bulk region and changing impurity atom doping levels. P region diffused into N region. The resultant effect is to cause more charge carriers to be present within the diode when it is conducting. Put simply, diodes with higher voltage ratings have larger bulk regions, require more time to remove internal charges at turn OFF and are thus slower switching. Rectifying action dependant solely on majority carriers therefore no minority carrier recombination.
Recovery is only dependant on the capacitance of metal-silicon junction.
Interface between metal and N layer creates a barrier potential. Schottky diode construction 3. Reverse Recovery Figure 3a and b show typical styles of reverse recovery. The effect of reverse recovery on the output voltage of a rectifier feeding a resistive load is shown in figure 4. Bridge rectifier output voltage showing diode reverse recovery effects 4.