MultiLevel Cell technology intensifies this learning by adding multiple bits of information on a single memory transistor. This direct memory cell access results in a reliable, robust technology suitable for many applications. This article describes the fundamentals of a flash MLC technology, providing insight to device operating characteristics of programming and reading. In addition, it briefly describes system implementation advantages associated with the MLC technology path. Each cell is characterized by a specific threshold voltage, or V t level.
Electrical charge is stored on the floating gate of each cell.
This technology takes advantage of the analog nature of a traditional flash cell by assigning a bit pattern to a specific voltage range. MLC effectively reduces cell area as well as the die size for a given density. In MLC technology, the voltage across each cell has been divided into greater than two levels. MLC devices must be able to manage electrical charge precisely. More specifically, these devices must be able to place charge with precision, sense charge with precision, and store charge over time.