Independent control of ion energy and density results. Temperature control Large heat loads to the wafer from RF bias must be dissipated by backside gas, forcing use of complex clamping and chuck arrangements. Productivity advantages Films are dense as deposited, avoiding the requirement for post-deposition anneals at high temperature. High deposition rates require expensive high power RF supplies. Process disadvantages Sputtering can damage underlying structures at process turnon.
Plasma damage can result if strong DC magnetic fields are employed.
HDP reactors are relatively expensive and complex to fabricate and maintain. However, they have the unique ability to deposit silicon dioxide which is comparable in density to thermal oxide without exposing the wafer to very high temperatures, and good gap fill and local planarization.