The equilibrium valence band structure of this device can be measured. The general goal is to explore the limits of short channel Si FETs. The current gain is greatly enhanced and the base doping level can be traded higher. Cut-off frequency is increased as the storage time is substantially reduced due to the increased current gain. Plasma processes are widely used in manufacturing of VLSI circuits for anisotropic etching, surface cleaning, and low temperature deposition.
Plasma nonuniformities can lead to surface charging of wafers.
Device degradation, especially damage to gate dielectrics of MOS transistors, can occur due to this plasma induced charging. All known methods rely on estimating charge in plasmas from device degradation after plasma exposure or by using invasive probes. We have identified two causes for the observed difference in the temperature dependence of photo- and electroluminescence. Also, we have demonstrated that, for a given band gap, SiGeC has less strain and a greater critical thickness than does SiGe.