Localized stress within the metal film may elevate portions of the film through the adjacent dielectric layer, resulting in a metal extrusion and a short to the next metal layer. Also see pyramid . The scattering phenomenon can manifest itself as substrate current, gate current, or trapped charges . This acid is pungent and highly corrosive. This colorless, fuming liquid is extremely corrosive and will etch glass.
Hydrofluoric acid is used to etch silicon dioxide and, when combined with other acids, silicon.
Hydrogen is used as a means of providing a reducing atmosphere, as a carrier gas for epitaxial processes, and as a reagent to produce high-purity water. It sometimes is used in gas mixtures of fluorine-based plasma etchant for the processing of silicon dioxide film. Also see dry plasma etch . It is heavier than air and fumes strongly in moist air. Hydrogen chloride is very soluble in water and alcohol and less soluble in ether.