Introduction Most metal-semiconductor contacts are rectifying. The electronic transport across such Schottky contacts is characterized by their barrier heights. He found the barrier heights of metal-Se contacts to vary proportional to the work functions of the metals used but with a slope much smaller than unity. At metal-semiconductor interfaces, the wavefunctions of the metal electrons decay exponentially into the semiconductor in the energy range where the metal conduction band overlaps the semiconductor band gap.
Interfaces are electrically neutral.
Therefore, the charge densities on both sides of an interface are of equal magnitude but opposite sign. X m - X s of the electronegativities of the metal and thesemiconductor in contact. The zero-charge transfer barrier height results when the electronegativity difference is zero. Research on both ohmic and Schottky contacts are of current interest for GaN. Khan et al . These contacts are rectifying.