Each memory cell consists of four transistors and two high valued resistors. GVT71256DA18 SRAMs integrate 262,144x18 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation.
Individual byte write allows individual byte to be written.
The JTAG circuitry is used to serially shift data to and from the device. Cypress Semiconductor Corporation. All rights reserved.