This course presents fundamental aspects of plasma-assisted etching processes and applications in integrated circuit manufacturing. The physics of RF plasma sources and surface science aspects of etching reactions are covered in detail, including anisotropy and selectivity mechanisms, feature-scale issues, contamination, and damage. Plasma diagnostics and ion beam-based methods are also discussed.
Enrollment is limited and advance enrollment is required.
Previously, he spent 25 years as a research staff member and manager at the IBM Research Laboratory in San Jose. 1995 University Ave.