This paper presents a universal simulation with a reduced number of parameters, which primarily contribute to B diffusion. The profiles are satisfactorily fitted by three parameters, each of which has a clear physical meaning. As dopant distribution plays a prominent role in the simulation of LSI devices, the influence of dopant segregation should be included in the simulation when it affects significantly the dopant distribution. A simulation model was proposed. O. Dokumaci and M. Law, University of Florida An Interpolation Technique for the Numerical Solution of the Rate Equations in Extended Defect Simulation.
Extended defects affect diffusion and electrical activation of dopants in silicon.
Precipitates containing electrically inactive dopant atoms and dislocation loop-sinks may lead to such extended defects. The rediscretization method was unstable with the grid used. The interpolation techniques are better for approximating the electrically active arsenic profile and for approximating the size distribution of the precipitates. G. Zandler et al., Technical University, Munich Cellular Automata for Device Simulation - Concepts and Applications. Starting with a speed-up of 25 at low electric field strengths, the CA method performs up to 40 times faster than the Monte Carlo method at high fields.