The ES371 Reactive Ion Etching System can remove passivation film and can also etch multi-layer wiring specimens. The system is capable of performing both isotropic and anisotropic etching. Anisotropic etching with a high aspect ratio is possible due to its parallel electrode alignment and smaller lower electrode.
Isotropic etching is available by controlling the vacuum and gas flow rates.
The ES371 has memory capability for storing up to 97 etch recipes including control over pressure, gas flow rate, etching time, RF power output, and stage temperature. W600 X H378 X D680mm Weight Approx.