Physical models are based on known physical phenomena. Understanding the underlying physical phenomena allows models to be adjusted when physical parameters, such as doping levels or device geometry, change. We propose to develop scalable physical models for npn transistors fabricated using Cherry's process. Cherry has a variety of processes. They are characterized by the supply voltage used by the fabricated chips.
Higher voltages require higher chip breakdown voltages.
This is achieved by varying doping levels and transistor geometry. Modeling the variety of transistors requires scalable models that can be adjusted for different processes. Using modeling chips containing a variety of transistor geometries, students at the University will make measurements and derive physical models for npn transistors of various geometries. Measurements will be made on different geometrys and modeling algorithims developed to predict parameters as a function of geometry. The models developed will be based on the physical properties of the transistors rather than just doing an emperical fit to measurenents.