Growth is performed in a novel type of vertical rotating disk reactor.
The effects of several growth parameters on the film quality are discussed. The results on n-type doping of GaN with SiH 4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation. A few possible applications are high density optical data storage, full colour video-screens and even traffic lights. In spite of this recent success the growth of GaN and its alloys remains a challenge.