The concentration of PH3 has not been incorporated into the model since we can not find data on reaction rate and diffusion coefficient in the literature. We have employed a wide range of wall temperature condition to study the flow field, the temperature and SiHCl3 distributions in the reactor and on the substrate. The Tri concentration distribution is obtained based on the growth rate obtained from GS, The distribution of SiHCl3 can be obtained on the susceptor and is partially responsible for the resistivity. It is believed that the dopant concentration on the susceptor can be correlated to the resistivity on susceptor. However, the comparison is possible only after we know enough of the chemistry of PH3.
Further work is under progress.