High resistance of these mirrors leads to excessive heating of the structure. It has been studied by us since the early 1990s. As p-n junction within the depletion region. The accumulation of this negative sheet charge within the depletion layer reduces the potential barrier presented to the holes from the p-side, which then makes it energetically favourable for them to diffuse into the QW 1 . Light emission is from the device surface, independent of the applied electric field and therefore exhibits an XOR function with respect to the applied voltage.
E is the applied longitudinal field.
L de and l dh are the electron and hole drift currents respectively. L 3 is the hot hole injection into the well. Therefore it is able to operate as a super radiant structure based on stimulated emission rather than spontaneous emission as in the original device 2 . The top DBR has 20 similar layers. External bias of either polarity is applied in the pulsed mode between these contacts of a bar-shaped device.