The design exploits the mechanical properties of silicon resulting in a repeatable device that will not yield or suffer fatigue failure. With careful packaging, the long-term drift potential of the sensor chip is excellent. The device is very rugged and can withstand very large overpressures since the bottom electrode acts as a deflection stop limiting the movement of the diaphragm. The sensor output is in excess of 100 pF over the 8 bar pressure range providing a robust signal. Currently, the bonding process is being improved in order to reduce the bonded area required around the sensor thereby reducing base capacitance and increasing chip density on the wafer.
Future work includes incorporating electronics on the actual sensor chip.