The LCRT would typically operate in a vertically pumped configuration. However, due to difficulty of fabricating suitable vertical cavity structures we have initially investigated in-plane laser cavities.
Further studies are underway to prepare vertical cavity samples.
In the VCL geometry, RT thresholds are still too high for commercial applications of these devices. Significant reduction in the threshold current is expected when bulk active regions are replaced by heterostructures employing MQW active. We believe that the III-V nitride compounds are ideally suited for short wavelength laser screens because of their greater thermal conductivity and superior stability under high excitation levels. The active region is composed of 30 In 0.15 Ga 0.85 N quantum wells with GaN barriers. The MQW region is surrounded by GaN waveguiding layers and AlGaN cladding layers.