Ion implantation is a low-temperature vacuum technology that uses a linear accelerator to create a beam of charged atoms, or ions. The ion beam is then shaped and directed toward the device surface, embedding ions into the material. Hips loaded into process chamber Charged atoms are first produced by an ion source, which creates a plasma, or gaseous cloud of ions. The ions are extracted by a magnetic field and accelerated through an electric field to speeds of approximately 5 million miles per hour. Trillions of atoms per second strike the target, modifying both its composition and structure at the surface and near surface region.
Ion implantation is used on the stem tapers to reduce fretting wear dramatically.
Test results show an order of magnitude reduction in fretting of titanium alloy in micro-motion contact against CoCr. To reduce wear debris, the CoCr bearing surface is treated. Ion implantation will decrease the coefficient of friction of CoCr against polyethylene, and improve the material's wettability. Improved wettabiliy helps to retain a lubricating boundary layer and reduce wear of polyethylene components. Data taken from Maruyama et al.