Four 189 m gate-width FETs provide 7.5 dB nominal gain and 5.5 dB noise figure from 2 GHz to 18 GHz. Typical power output is 20 dBm at 1 dB gain compression. All metal surfaces are gold-plated to be compatible with thermocompression and thermosonic wire bonding processes.
Ground is provided to the circuitry through vias to the backside metallization.
TriQuint Semiconductor, Inc.