Such simulations are complex and computationally expensive. His research is divided between the development of empirical models of atomic interactions, and the realization of these models as computer programs. Much of this research is devoted to developing and coding efficient algorithms to reduce computational overhead, whilst maintaining a realistic system description.
Current research is focused on modeling radiation effects in materials.
This is directly related to materials problems of importance to the semiconductor industry. Rayshaded visualisation of Buckminsterfullerene interactions with bare and hydrogenated silicon surfaces. The atomic positions were calculated via Molecular Dynamics Simulation. The atomic positions were calculated via Molecular Dynamics Simulation. The atomic positions were calculated via Molecular Dynamics Simulation.