Like all semiconductors, compound semiconductors start with substrates machined from crystaline boules. CZ sapphire substrates provide a very high quality crystaline structure, dielectric isolation, and uniform dielectric constant, in addition to excellent physical and optical properties, which make them the cost-effective choice for the company s InGaN LED products. Up to this point, the brightest InGaN LEDs are p-n junctions grown on electrically insulating sapphire substrates. This enables high quality LEDs from the Red to Yellow-Green hues. The different band gaps of the respective materials localize the electron or hole carriers in specific layers.
Deposition occurs between metalorganic precursors and hydride gasses on a hot substrate surface.
The result is a uniform distribution of atoms, layer upon layer. The technology used by the company has a long history of success and has been reduced to high-volume production practices at its Tampa, Florida facility. Precise particle control is achieved by elimination of gas phase pre-reactions, and the use of thermophoresis, to keep particles from reaching the wafer surface. This site is optimized for current versions of Internet Explorer or NetScape .