The rest of the columns show data for MEMS switches that was emailed to me by the people listed, and quantities that I derived from that data. The thickness and volume numbers vary widely, in large part because some contributors took the device thickness to be its height above the wafer surface, whereas others took it to mean the normal wafer thickness. What I actually intended was the device height plus the minimum thickness of the wafer, after thinning, that would still be sufficient to support the device structurally. This would allow calculation of the maximum packing density of devices in 3-D, assuming the substrate were thinned. The figures in the table have not yet all been adjusted to be consistent with this interpretation.
Capacitances are comparable between the two kinds of devices.
MEMS switches usually require much higher activating voltages, although a few cases are reasonably low-voltage. The maximum frequencies of MEMS switches are generally much lower. This should improve, however, if they can be made smaller. Unfortunately, due to their high activating voltages, the CV 2 energy dissipation of MEMS switches tends to be much larger. That is, the energy that needs to be moved onto the switch control to activate it is larger, by 2 to 4 orders of magnitude.