On the submillimeter scale of integrated devices, materials like silicon show very little or no fatigue, which is apparently a macroscale phenomenon. Thus integrated sensors can be flexed indefinitely, and have a long lifetime. In addition to sensors based on the piezoresistive effect, there also exist high-precision sensors based on capacitive effect. A membrane is also used, with one plate of a capacitor mounted on the membrane and the other plate suspended above it, usually fabricated on a relatively inflexible material such as Pyrex glass. The deflection of the membrane changes the distance between the plates and thus changes the capacitance.
Capacitors tend to be much less temperature and time variant than piezoresistors.
Silicon reed oscillators are formed from a millimeter-scale paddle suspended by a thin silicon bridge, which is caused to oscillate. On-chip amplification of the signal is the first necessary step to ensure minimizing the effect of noise on the output. Temperature-dependent behavior is seen as the limiting factor in integrated sensors. Bandgap reference circuits are designed which have a negative temperature coefficient. This is added to the output to compensate for the positive temperature coefficient of the sensor.