Although it appears that a double barrier quantum well is desirable we expect this phenomena to occur in other heterostructure devices in conjunction with suitably doped spacer layers. This device has the potential to provide memory for high speed electronic systems. In addition, the area and thickness required for the device structure is very small, yielding the possibility of very high density. Rev. B , vol. Only the two most stable curves are shown.
Arrows indicate bias ranges over which no transitions between states have been observed.