This project is intended to investigate HBT non linear characteristics and design high-power and high efficiency monolithic power amplifiers for multipoint radio communications applications. The characterisics of a microwave component, such as reflection and transmission coefficients at different frequencies, depend on the precise dimensions used within the component itself. Simulators exist that can work out these characteristics, but they need a long time to simulate one particular design. The aim of this project is to train a neural network on the simulation data, to predict the characteristics of components that have not been simulated. This would enable the characteristics of a large design, consisting of many components, to be estimated by using a several of such networks.
Broadband amplifier integrated circuits are very useful for communication systems.
The Si based ICs are not adequately fast enough for modern telecommunications but those ICs which are based on gallium arsenide are very promising. The aim of this project is to investigate and to develop such a capability in GaAs ICs. This IC will be implemented with advanced heterojunction bipolar transistors which have shown great promise for high frequency applications. The research work includes device modelling, circuit simulation, fabrication of IC and testing. This programme aims to give the research student a broad range of skills in the design and development of advanced circuits engineered at King's College.