24 Sep at 11 am.
Details are below.
All are welcome to attend. Schottky and PiN rectifiers, rf transistors, high power density switches etc. The success of silicon carbide as a semiconductor is based on its unique materials properties such as high breakdown electric field, high electron saturation drift velocity, large band gap and its extreme mechanical and chemical stability. The growth of silicon carbide bulk crystals followed a historic evolution of more and more refined growth techniques. The different crystal growth methods and their typical results will be discussed in comparison to today's silicon carbide growth technology.