DOI: 10.18150/etlvth
title: Compact terahertz devices based on silicon in CMOS and BiCMOS technologies

description: This is a set of research data related to the article titled But D.B., A. V Chernyadiev, K. Ikamas, C. Kołaciński, A. Krysl, H.G. Roskos, W. Knap, A. Lisauskas, Compact terahertz devices based on silicon in CMOS and BiCMOS technologies, Opto-Electronics Rev. 31 (2023) e144599–e144599. https://doi.org/10.24425/opelre.2023.144599.The set contains numerical data used to create the next Figures:Fig02A.csv - Fig.2 panel (a) Comparison of voltage response as a function of the frequency for CMOS-based TeraFET with a narrowband patch antenna (blue dots, 4th column) and the substrate-lens coupled (green dots,6th column) slot dipole antenna. The red curve (2nd column) is the power.Fig02B.csv -Fig.2 panel (b) Comparison of NEP for narrowband patch (blue dots, 2nd column) and slot dipole (green dots, 4th column) antennas as a function of frequency. The red curves correspond to the calculated value of NEP for respective devices (patch, 6th column and slot, 8th column).Fig03AA.csv - Fig.3 panel (a1) The power spectrum of the cw-photomixer THz radiation source is denoted by the grey curve.Fig03AB.csv - Fig.3 panel (a2) The curves correspond to signals that have been measured utilizing a TeraFET detector with patch antennas.Fig03B.csv - Fig.3 panel (b) Beam areas as a function of the frequency that was determined during experimentFig04D.csv - Fig.4 panel (d) - the simulated impedance for a MOSFET with 60 nm gate length and 28 µm width (14 fingers with 2 µm each)Fig04E.csv - Fig.4 panel(e) the spectrum of the real part of conductance for different values of 𝐿𝑔.Fig05C.csv - Fig.5 panel (C) Schematic representation of Colpitts oscillators for 65 nm CMOS technology. Dependence of the radiated power on frequency which is controlled by gate (base) bias voltage.Fig05D.csv - Fig.5 panel (d) - Schematic representation of Colpitts oscillators for a 130 nm BiCMOS technology. The dependence of the radiated power on frequency is controlled by a gate bias voltage of 65 nm CMOS VCO different drain voltages.Fig07D.csv - Fig.7 panel (d) - Dependence of the radiated power on frequency which is controlled by base bias voltage for 130 nm BiCMOS technologies at different collector biases.Fig07B.csv - Fig.7 panel (b) - The dynamic range of mixing signal (2nd column). Frequency of oscillations as a function of base bias voltage (4th column)Fig08B.csv - Fig. 8. panel (b) - The radiation spectra obtained using the interferometer for a 65 nm CMOS harmonic oscillator.Fig08C.csv - Fig. 8. panel (c) - The radiation spectra obtained using the interferometer for a 130 nm SiGe HBT fundamental oscillatorFig.9-001-Scan00AUX5Fwd.int and Fig.9-001-Scan00AUX5Bwd.int - Fig.9 right image of panel b - Two Fig.9-001-Scan00AUX5Fwd.int and Fig.9-001-Scan00AUX5Bwd.int - Fig.9 right image of panel b -Fig.9-003-Scan00topoFwd.int and Fig.9-003-Scan00topoBwd.int - Fig.9 right image of panel b - Two files for topographic drawing, index F - forward & B - backward are the direction of the scan, during the experiment.Fig.9-001-Scan00AUX5Fwd.int and Fig.9-001-Scan00AUX5Bwd.int - Fig.9 left image of panel b - two files for the image obtained from s-SNOM scans at the third harmonic. Files could be opened by Gwyddion software. Gwyddion is Free and Open Source software covered by GNU General Public LicenseFig.10BA.txt - Raster scan dataFig.10BB.txt - Parameter of scanFig.11B.xls - Fig. 11. panel - The eye diagrams of the detector output signal at 3 MHz of the point-to-point data transmission line.