DOI: 10.5061/dryad.z34tmpgkx
title: Data from: Evaluating the influence of novel charge transport materials on the photovoltaic properties of MASnI3 solar cells

description: In recent decades, substantial advancements have been made in photovoltaic
 technologies, leading to impressive power conversion efficiencies
 exceeding 25% in perovskite solar cells (PSCs). Tin-based perovskite
 materials, characterized by their low band gap (1.3 eV), exceptional
 optical absorption, and high carrier mobility, have emerged as promising
 absorber layers in PSCs. Achieving high performance and stability in PSCs
 critically depends on the careful selection of suitable charge transport
 layers (CTLs). This research investigates the effects of five copper-based
 hole transport materials and two carbon-based electron transport materials
 in combination with methyl ammonium tin iodide (MASnI3). The carbon-based
 CTLs exhibit excellent thermal conductivity and mechanical strength, while
 the copper-based CTLs demonstrate high electrical conductivity. The study
 comprehensively analyzes the influence of these CTLs on PSC performance,
 including band alignment, quantum efficiency, thickness, doping
 concentration, defects, and thermal stability. Furthermore, a comparative
 analysis is conducted on PSC structures employing both p-i-n and n-i-p
 configurations. The highest-performing PSCs are observed in the inverted
 structures of CuSCN/MASnI3/C60 and CuAlO2/MASnI3/C60, achieving power
 conversion efficiencies (PCE) of 23.48% and 25.18%, respectively. Notably,
 the planar structures of Cu2O/MASnI3/C60 and CuSbS2/MASnI3/C60 also
 exhibit substantial PCE, reaching 20.67% and 20.70%, respectively.
description: # Evaluating the influence of novel charge transport materials on the
 photovoltaic properties of MASnI3 solar cells
 Manuscript: Evaluating the
 Influence of Novel Charge Transport Materials on the Photovoltaic
 Properties of MASnI3 Solar Cells Authors: Khalid Afridi (1), Muhammad
 Noman(1), Shayan Tariq Jan(1,2) Affiliation: 1 U.S.-Pakistan Centre for
 Advanced Studies in Energy, University of Engineering & Technology,
 Peshawar, Pakistan ``` 2 Department of Energy Engineering Technology,
 University of Technology, Nowshera, Pakistan ``` Contact Information:
 Muhammad Noman, Ph. D. ``` Address: Renewable Energy Engineering, U.S.
 Pakistan Center for Advanced Studies in Energy, UET Peshawar 25000,
 Pakistan. Phone: +92-333-9177218 E-mail: muhammad.noman@uetpeshawar.edu.pk
 ORCID IDs:0000-0001-8718-6386 ``` Data and File Overview Total data Files:
 1 CVS files: 1 Methodological Information: \* Methods of data
 collection/generation: see manuscript for details. Table of Contents Data
 Results: \* Data SCAPS-1D software was used to generate the data. The
 submission includes a total of 1 files. Data File: The submission has 1
 files with extension .xlsx, labelled "Results" can be accessed
 through microsoft excel files. The Data file has 17 sheets. Each sheet
 shows the specific result of perofrmance for all the structures The 1st
 sheet showa the Quantum Efficiency data of the structures. The 2nd sheet
 shows the IV characterization. The 3rd sheet show the electric potentail
 at HTL/Perovskite interface The 4th sheet shows the electric potential at
 ETL/Perovskite interface The 5th sheet shows the heterojunction
 recombiation at HTL/Perovskite The 6th sheet shows the qheterojunction
 recombiation at ETL/Perovskite The 7th sheet shows the effect of interface
 defects at HTL/Perovskite The 8th sheet shows the effect of interface
 defects at ETL/Perovskite The 9th sheet shows the effect of absorber
 thickness The 10th sheet shows the effect of ETL Thickness The 11th sheet
 shows the effect of HTL Thickness The 12th sheet shows the effect of
 absorber doping The 13th sheet shows the effect of ETL doping The 14th
 sheet shows the effect of HTL doping The 15th sheet shows the effect of
 bulk defect density The 16th sheet shows the effect of metal work function
 The 17th sheet shows the effect of temperature Nomenclature PSC:
 Perovskite Solar Cell MASnI3: methyl ammonium tin iodide HTL: Hole
 Transport Layer ETL: Electron Transport Layer CTL: Charge Transport Layer
 FTO: Fluorine-doped tin iodide CB: Conduction Band VB: Valance Band CBO:
 Conduction Band Offset VBO: Valance Band Offset Eg: Band Gap PCE: Power
 Conversion Efficieny Jsc: Short Circuit Current Voc: Open Circuit Voltage
 FF: Fill Factor QE: Quantum Efficiency NA and ND: the concentration of the
 acceptor and donor ψ: electrostatic potential p and n: number of holes and
 electrons; Jp and Jn: the current density of holes and electrons G(x):
 optical generation R p(x) and R n(x): the rate of recombination of holes
 and electrons. Dn: the diffusion coefficient for electrons Dp: the
 diffusion coefficient for holes Nt: Defect Density IF: Interface defects
 WF: Work Function x(um): Thickness of material bp 1: interface defects
 density PCBM: fullerene derivative [6,6]-phenyl-C61-butyric acid methyl
 ester. Units: nm: Nano meter cm: Centi meter um: micro meter eV: Electron
 Volt s: second V: volt A: Ampere