DOI: 10.6084/m9.figshare.25284907.v1
title: Completely Annealing-Free Flexible Perovskite Quantum Dot Solar Cells Employing UV-Sintered Ga-Doped SnO2 Electron Transport Layers.xlsx

description: <b>Fig. 1: Crystallographic and chemical properties of each SnO</b><sub><strong>2</strong></sub><b> film</b><b>a</b><b>−c</b> GIWAXS patterns for SnO<sub>2</sub> NP, SnO<sub>2</sub> CNR, and Ga:SnO<sub>2</sub> CNR films, respectively. <b>d</b> XPS core level spectra of Ga 2p and Sn 3d for each SnO<sub>2</sub> film. <b>e </b>Deconvoluted XPS O 1s spectra of each SnO<sub>2</sub> film. <b>f</b> HR-TEM image and schematic representation of Ga:SnO<sub>2</sub> CNR morphology and chemical structure.<br><b>Fig. 2: Charge transport property from CsPbI</b><sub><strong>3</strong></sub><b>-PQD to customized SnO</b><sub><strong>2</strong></sub><b>.</b><b>a</b> <i>J</i>−<i>V</i> characteristics and calculated conductivity for each SnO<sub>2</sub>-based device. <b>b</b> Energy band diagrams for the configurations of the CsPbI<sub>3</sub>-PQD solar cell. <b>c</b> Mott–Schottky plots of CsPbI<sub>3</sub>-PQD solar cell with each SnO<sub>2</sub> ETL. <b>d</b> Steady-state PL spectra of the CsPbI<sub>3</sub>-PQD films deposited on each SnO<sub>2</sub> film. <b>e</b> TRPL spectra with excitation wavelength of 463 nm for CsPbI<sub>3</sub>-PQD films deposited on each SnO<sub>2</sub> film. <b>f</b> Dark <i>J</i>−<i>V</i> curves of the electron-only devices (ITO/SnO<sub>2</sub>/CsPbI<sub>3</sub>-PQD/PCBM/Au) with V<sub>TFL</sub> kink points.<br><b>Fig. 3: CsPbI</b><sub><strong>3</strong></sub><b>-PQD solar cell performance using each SnO</b><sub><strong>2</strong></sub><b> as ETL.</b><b>a</b> Schematic illustration representing the UV sintering process for formation of SnO<sub>2</sub> CNR thin film and fabrication method for CsPbI<sub>3</sub>-PQD solar cells. <b>b</b> <i>J</i>−<i>V</i> characteristics of best-performing CsPbI<sub>3</sub>-PQD solar cells using various SnO<sub>2</sub> as ETL (inset: device configuration measured by SEM). <b>c</b> IPCE spectra of CsPbI<sub>3</sub>-PQD solar cells with SnO<sub>2</sub> ETLs and integrated <i>J</i><sub>SC</sub> calculated from IPCE. <b>d</b> Normalized <i>PCE</i> obtained by stability tests of each SnO<sub>2</sub>-based device under ambient condition (25℃, 20% RH) for 10 days (inset: XRD data of the CsPbI<sub>3</sub>-PQD film exfoliated from each SnO<sub>2 </sub>after 1 day and 7 days, respectively).<b>Fig. 4: Characterizations of each SnO</b><sub><strong>2</strong></sub><b> ETL-based flexible CsPbI</b><sub><strong>3</strong></sub><b>-PQD solar cells</b><b>a</b> <i>J</i>−<i>V</i> characteristics of best-performing flexible CsPbI<sub>3</sub>-PQD solar cells using various SnO<sub>2</sub> as ETL (inset: photograph of the fabricated flexible solar cell). <b>b</b> <i>In-situ</i> relative resistance change (<i>Δ</i><i>R/R</i><sub><em>0</em></sub>) of each SnO<sub>2</sub>-based device (ITO/SnO<sub>2</sub>/Au) during bending test with 7.5 mm of curvature of radius (<i>R</i><sub><em>C</em></sub>) (inset: after recovery from bending at various values of <i>R</i><sub><em>C</em></sub>). <b>c</b> Normalized <i>PCE</i> of the flexible CsPbI<sub>3</sub>-PQD solar cell after repeated bending at <i>R</i><sub><em>C </em></sub>= 7.5 mm for 500 bending cycles (inset: top-view SEM image of SnO<sub>2</sub> film on a flexible substrate before and after bending test).<b>Table 1. </b>Photovoltaic parameters of best-performing CsPbI<sub>3</sub>-PQD solar cells with various SnO<sub>2</sub> ETLs (SnO<sub>2</sub> NP, SnO<sub>2</sub> CNR, and Ga:SnO<sub>2</sub> CNR) under 1 sun conditions.<b>Table 2.</b> Photovoltaic parameters of best-performing flexible CsPbI<sub>3</sub>-PQD solar cells with various SnO<sub>2</sub> ETLs (SnO<sub>2</sub> NP, SnO<sub>2</sub> CNR, and Ga:SnO<sub>2</sub> CNR) under 1 sun conditions.