DOI: 10.57760/sciencedb.34995
title: Associated Data for the Article "Irradiation-induced lattice swelling in SiC and its potential application in irradiation temperature monitoring"
title: 《辐照诱导碳化硅晶格肿胀及其在辐照温度监测中的应用探索》文章关联数据

description: This dataset focuses on the lattice swelling rate and Raman spectral characteristics of 4H-SiC single crystals irradiated by 5 MeV Xe ions at various temperatures. Using X-ray diffraction and high-resolution confocal Raman spectroscopy, the dataset systematically records the variations in lattice parameters and the frequency shifts of optical phonon peaks for 4H-SiC samples within the temperature range of 220–655 °C. The data reveals the nonlinear evolution of the saturated lattice swelling rate of SiC with irradiation temperature, as well as the quantitative correlation between the Raman peak shift, irradiation temperature, and lattice swelling rate. These datasets provide key experimental basis and theoretical support for using the lattice swelling and spectral features of SiC for irradiation temperature monitoring in nuclear reactors. The dataset consists of the following 7 files: File 1 contains schematic diagrams and photographs of the experimental setup ( "Experimental setup photos and schematics, .png" ), corresponding to Fig. 1 in the article; File 2 contains data on the ion implantation concentration and displacement damage distribution versus depth ( "SRIM simulation, .opju"; Origin ), corresponding to Fig. 2; File 3 contains the raw XRD spectra data of 4H-SiC samples irradiated at different temperatures ( "XRD spectra data, .opju"; Origin ), corresponding to Fig. 3; File 4 contains data on the saturated lattice swelling rate of SiC as a function of irradiation temperature, along with comparative literature data ( "Swelling vs Temp, .opju"; Origin ), corresponding to Fig. 4; File 5 contains cross-sectional microscopic images of the sample irradiated at 655 °C ( "Cross-sectional TEM images, .png" ), corresponding to the original images of Fig. 5; File 6 contains raw Raman spectra data and peak fitting data for 4H-SiC samples before and after irradiation at different temperatures ( "Raman spectra data, .opju"; Origin ), corresponding to Fig. 6; File 7 contains correlation data of the LO peak position shift versus irradiation temperature and lattice swelling rate ( "LO shift vs Temp and Swelling, .opju"; Origin ), corresponding to Fig. 7.
description: This dataset focuses on the lattice swelling rate and Raman spectral characteristics of 4H-SiC single crystals irradiated by 5 MeV Xe ions at various temperatures. Using X-ray diffraction and high-resolution confocal Raman spectroscopy, the dataset systematically records the variations in lattice parameters and the frequency shifts of optical phonon peaks for 4H-SiC samples within the temperature range of 220–655 °C. The data reveals the nonlinear evolution of the saturated lattice swelling rate of SiC with irradiation temperature, as well as the quantitative correlation between the Raman peak shift, irradiation temperature, and lattice swelling rate. These datasets provide key experimental basis and theoretical support for using the lattice swelling and spectral features of SiC for irradiation temperature monitoring in nuclear reactors. The dataset consists of the following 7 files: File 1 contains schematic diagrams and photographs of the experimental setup ( "Experimental setup photos and schematics, .png" ), corresponding to Fig. 1 in the article; File 2 contains data on the ion implantation concentration and displacement damage distribution versus depth ( "SRIM simulation, .opju"; Origin ), corresponding to Fig. 2; File 3 contains the raw XRD spectra data of 4H-SiC samples irradiated at different temperatures ( "XRD spectra data, .opju"; Origin ), corresponding to Fig. 3; File 4 contains data on the saturated lattice swelling rate of SiC as a function of irradiation temperature, along with comparative literature data ( "Swelling vs Temp, .opju"; Origin ), corresponding to Fig. 4; File 5 contains cross-sectional microscopic images of the sample irradiated at 655 °C ( "Cross-sectional TEM images, .png" ), corresponding to the original images of Fig. 5; File 6 contains raw Raman spectra data and peak fitting data for 4H-SiC samples before and after irradiation at different temperatures ( "Raman spectra data, .opju"; Origin ), corresponding to Fig. 6; File 7 contains correlation data of the LO peak position shift versus irradiation temperature and lattice swelling rate ( "LO shift vs Temp and Swelling, .opju"; Origin ), corresponding to Fig. 7.