cometadata/datacite-titles-descriptions-related-identifiers huggingface dataset:
DOI: 10.21227/abre-9452
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/m4p2-f346
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/2cyq-yk89
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.15156/bio/sh0951218.09fu
title: SH0951218.09FU

description: UNITE provides a unified way for delimiting, identifying, communicating, and working with DNA-based Species Hypotheses (SH). All fungal ITS sequences in the international nucleotide sequence databases are clustered to approximately the species level by applying a set of dynamic distance values (<0.5 - 3.0%). All species hypotheses are given a unique, stable name in the form of a DOI, and their taxonomic and ecological annotations are verified through distributed, web-based third-party annotation efforts. SHs are connected to a taxon name and its classification as far as possible (phylum, class, order, etc.) by taking into account identifications for all sequences in the SH. An automatically or manually designated sequence is chosen to represent each such SH. These sequences are released (https://unite.ut.ee/repository.php) for use by the scientific community in, for example, local sequence similarity searches and next-generation sequencing analysis pipelines. The system and the data are updated automatically as the number of public fungal ITS sequences grows.
DOI: 10.21227/svbk-hf63
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/y9vh-mp35
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/xxtc-x015
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/0s16-kd68
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/aecf-6h19
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.15156/bio/sh0951219.09fu
title: SH0951219.09FU

description: UNITE provides a unified way for delimiting, identifying, communicating, and working with DNA-based Species Hypotheses (SH). All fungal ITS sequences in the international nucleotide sequence databases are clustered to approximately the species level by applying a set of dynamic distance values (<0.5 - 3.0%). All species hypotheses are given a unique, stable name in the form of a DOI, and their taxonomic and ecological annotations are verified through distributed, web-based third-party annotation efforts. SHs are connected to a taxon name and its classification as far as possible (phylum, class, order, etc.) by taking into account identifications for all sequences in the SH. An automatically or manually designated sequence is chosen to represent each such SH. These sequences are released (https://unite.ut.ee/repository.php) for use by the scientific community in, for example, local sequence similarity searches and next-generation sequencing analysis pipelines. The system and the data are updated automatically as the number of public fungal ITS sequences grows.
DOI: 10.21227/qa6w-hv48
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/ehs7-hn46
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/wxyz-7r60
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/x0j4-cr51
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/r0ed-zq18
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.15156/bio/sh0951220.09fu
title: SH0951220.09FU

description: UNITE provides a unified way for delimiting, identifying, communicating, and working with DNA-based Species Hypotheses (SH). All fungal ITS sequences in the international nucleotide sequence databases are clustered to approximately the species level by applying a set of dynamic distance values (<0.5 - 3.0%). All species hypotheses are given a unique, stable name in the form of a DOI, and their taxonomic and ecological annotations are verified through distributed, web-based third-party annotation efforts. SHs are connected to a taxon name and its classification as far as possible (phylum, class, order, etc.) by taking into account identifications for all sequences in the SH. An automatically or manually designated sequence is chosen to represent each such SH. These sequences are released (https://unite.ut.ee/repository.php) for use by the scientific community in, for example, local sequence similarity searches and next-generation sequencing analysis pipelines. The system and the data are updated automatically as the number of public fungal ITS sequences grows.
DOI: 10.5281/zenodo.7798156
title: ReD&T_1.2_Anonymised_data

description: Downloaded data for Phase 1 round 2 survey: looking for consensus. The data is anonymised. Following calculations are included Average Standard deviation Median Frequency count Frequency percentage Cumulative percentage
DOI: 10.21227/34fk-5109
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/w3zv-2r61
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/1kg9-3v60
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/wjtw-3f66
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/awe0-2t43
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.15156/bio/sh0951221.09fu
title: SH0951221.09FU

description: UNITE provides a unified way for delimiting, identifying, communicating, and working with DNA-based Species Hypotheses (SH). All fungal ITS sequences in the international nucleotide sequence databases are clustered to approximately the species level by applying a set of dynamic distance values (<0.5 - 3.0%). All species hypotheses are given a unique, stable name in the form of a DOI, and their taxonomic and ecological annotations are verified through distributed, web-based third-party annotation efforts. SHs are connected to a taxon name and its classification as far as possible (phylum, class, order, etc.) by taking into account identifications for all sequences in the SH. An automatically or manually designated sequence is chosen to represent each such SH. These sequences are released (https://unite.ut.ee/repository.php) for use by the scientific community in, for example, local sequence similarity searches and next-generation sequencing analysis pipelines. The system and the data are updated automatically as the number of public fungal ITS sequences grows.
DOI: 10.21227/8jjm-zz14
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/708f-hn36
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/7cga-2043
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/7f7x-a507
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.21227/d1d3-2f40
title: A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

description: The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.
DOI: 10.15156/bio/sh0951222.09fu
title: SH0951222.09FU

description: UNITE provides a unified way for delimiting, identifying, communicating, and working with DNA-based Species Hypotheses (SH). All fungal ITS sequences in the international nucleotide sequence databases are clustered to approximately the species level by applying a set of dynamic distance values (<0.5 - 3.0%). All species hypotheses are given a unique, stable name in the form of a DOI, and their taxonomic and ecological annotations are verified through distributed, web-based third-party annotation efforts. SHs are connected to a taxon name and its classification as far as possible (phylum, class, order, etc.) by taking into account identifications for all sequences in the SH. An automatically or manually designated sequence is chosen to represent each such SH. These sequences are released (https://unite.ut.ee/repository.php) for use by the scientific community in, for example, local sequence similarity searches and next-generation sequencing analysis pipelines. The system and the data are updated automatically as the number of public fungal ITS sequences grows.