DOI: 10.5061/dryad.1jwstqk3c
title: Ultrafast high-endurance memory based on sliding ferroelectrics

description: The persistence of voltage-switchable collective electronic phenomena down
 to the atomic scale has extensive implications for area-efficient and
 energy-efficient electronics, especially in emerging nonvolatile memory
 technology. In this study, we investigate the performance of a
 ferroelectric field-effect transistor (FeFET) based on sliding
 ferroelectricity in bilayer boron nitride at room temperature. Sliding
 ferroelectricity represents a novel form of atomically thin
 two-dimensional ferroelectrics, characterized by the switching of
 out-of-plane polarization through interlayer sliding motion. We examined
 the FeFET device employing monolayer graphene as the channel layer, which
 demonstrated ultrafast switching speeds on the nanosecond scale and high
 endurance exceeding 1011 switching cycles, comparable to state-of-the-art
 FeFET devices. These superior characteristics highlight the potential of
 two-dimensional sliding ferroelectrics for inspiring next-generation
 nonvolatile memory technology.
description: The data was collected by MATLAB code. The resistance Rxx was
 normalized by the geometric factor.
description: # Ultrafast high-endurance memory based on sliding ferroelectrics
 [https://doi.org/10.5061/dryad.1jwstqk3c](https://doi.org/10.5061/dryad.1jwstqk3c) Numerical data was used for generating the plot in the paper. Fig. 1c:  VB_up (V): The back gate voltage swept in the increasing direction. Rxx_up (kOhm): The resistance of the sample while back gate voltage is swept in the increasing direction. VB_down (V): The back gate voltage swept in the decreasing direction. Rxx_down (kOhm): The resistance of the sample while back gate voltage is swept in the decreasing direction. Fig. 2a:  pulse_ampl (V): The voltage of the pulse we applied to the sample after initialization. pulse_len (ns): The width of the pulse we applied to the sample after initialization. Rxx (kOhm): The resistance of the sample after the application of voltage pulse. Fig. 2b:  pulse_ampl (V): The voltage of the pulse we applied to the sample after initialization. pulse_len (ns): The width of the pulse we applied to the sample after initialization. Rxx (kOhm): The resistance of the sample after the application of voltage pulse. Fig. 3: count: The number of switching cycles we applied. after -3.1 V (kOhm): The resistance measured right after the application of the pulse with the voltage of -3.1 V. after 3.1 V (kOhm): The resistance measured right after the application of the pulse with the voltage of 3.1 V. Fig. 3_inset:\ time (ns): The time measured in the oscilloscope while applying the ac square pulse.\ V (V): The voltage measured in the oscilloscope while applying the ac square pulse. Fig. S2 VB_up_before_endurance_test (V): The back gate voltage swept in the increasing direction before the endurance test. Rxx_up_before_endurance_test (kOhm): The resistance of the sample while back gate voltage is swept in the increasing direction before the endurance test. VB_down_before_endurance_test (V): The back gate voltage swept in the decreasing direction before the endurance test. Rxx_down_before_endurance_test (kOhm): The resistance of the sample while back gate voltage is swept in the decreasing direction before the endurance test. VB_up_after_endurance_test (V): The back gate voltage swept in the increasing direction after the endurance test. Rxx_up_after_endurance_test (kOhm): The resistance of the sample while back gate voltage is swept in the increasing direction after the endurance test. VB_down_after_endurance_test (V): The back gate voltage swept in the decreasing direction after the endurance test. Rxx_down_after_endurance_test (kOhm): The resistance of the sample while back gate voltage is swept in the decreasing direction after the endurance test. Fig. S3 time 1 ns (ns): The time measured in the oscilloscope while applying the pulse with the pulse width of 1 ns. V 1 ns (V): The voltage measured in the oscilloscope while applying the pulse with the pulse width of 1 ns. time 2 ns (ns): The time measured in the oscilloscope while applying the pulse with the pulse width of 2 ns. V 2 ns (V): The voltage measured in the oscilloscope while applying the pulse with the pulse width of 2 ns. time 5 ns (ns): The time measured in the oscilloscope while applying the pulse with the pulse width of 5 ns. V 5 ns (V): The voltage measured in the oscilloscope while applying the pulse with the pulse width of 5 ns. Fig. S4:\ count: The number of switching cycles we applied.\ initial (kOhm): The resistance measured right after the switching cycle.\ after -3.1 V (kOhm): The resistance measured right after the application of the pulse with the voltage of -3.1 V.\ after 3.1 V (kOhm): The resistance measured right after the application of the pulse with the voltage of 3.1 V.