DOI: 10.5061/dryad.d7wm37qcg
title: Data from: Terahertz sensing based on the nonlinear electrodynamics of the two-dimensional correlated topological semimetal TaIrTe4

description: The development of terahertz (THz) sensing technologies is limited by the
 lack of sensitive, broadband, and fast terahertz detectors. Thermal
 bolometers are bulky and slow, whereas electronic terahertz detectors
 (such as Schottky diodes) are fast, but their sensitivity degrades quickly
 outside a narrow frequency window. Here, we show that a two-dimensional
 correlated topological semimetal, tantalum iridium telluride (TaIrTe4),
 has a large room temperature nonlinear Hall effect, and that the
 interaction between this effect and terahertz nonlinear electrodynamics
 can be used as a mechanism for terahertz sensing. Our photodetectors
 exhibit a high sensitivity (noise equivalent power of around 1 pW Hz-1/2)
 and a large zero-bias responsivity (around 0.3 A W-1) a broadband spectral
 range (0.1–10 THz) at room temperature with intrinsic ultrafast response
 time (around ps). The zero-bias responsivity and noise equivalent power
 performance can be further improved (to 18 A W-1 and 0.05 pW Hz-1/2,
 respectively) by introducing gate-tunable electron correlations.
description: # Data from: Terahertz sensing based on the nonlinear electrodynamics of
 the two-dimensional correlated topological semimetal TaIrTe4 Dataset DOI:
 [10.5061/dryad.d7wm37qcg](10.5061/dryad.d7wm37qcg) ## Description of the
 data and file structure This dataset contains: 1. Optical measurements of
 sample TaIrTe4 with methods including Second Harmonic Generation, Raman
 Spectroscopy and Linear Dichroism. 2. Transport measurement of sample
 TaIrTe4 3. Optoelectronics measurement of TaIrTe4. Photovoltage was
 collected when sample was exposed to THz wave, infrared laser and visible
 laser. 4. Calculations of Berry Curvature Dipole and band structure of
 TairTe4 based on first principle calculations. The experimental and
 theoretical study aimed to reveal the THz sensing capability and
 characterize the correlated state. ### Files and variables #### File:
 Figure2.xlsx **Description:** This file contains all file used for
 analyzing Figure2, characterizing device performance at room temperature.
 ##### Variables * Power Density: Power density used for THz photovoltage
 measurements; Unit: mW/cm^2 * V^d.c.: Measured d.c. photovoltage; Unit:
 Volt (V) * Material: material type measured; Graphene and Tairte4 (from
 50-Layer to 2-layer); * Responsivity: measured and calculated responsivity
 of device; Unit: A/W * Frequency: frequency of NEP measurement; Unit:
 Hertz (Hz) * NEP: noise equivalent power; Unit: W Hz^(-1/2) * Angle:
 Polarization Angle of the incident THz wave; Unit: degree (deg) * Vb:
 Photovoltage measured along crystalline b axis; Unit: arbitrary units *
 Va: Photovoltage measured along crystalline a axis; Unit: arbitrary units
 * Frequency range: the range of the wave source frequency; Unit: THz *
 Responsivity: measured and calculated responsivity of device; Unit: A/W *
 Time: time delay setting in the pump-probe/autocorrelation measurement;
 Unit: picosecond (ps) * Vb: measured photovoltages; unit: arbitrary unit
 #### File: Figure3.xlsx **Description:** This file contains all file used
 for analyzing Figure3, characterizing device performance at varying
 temperature. ##### Variables * Temperature: Measurement temperature; Unit:
 K * Responsivity: measured and calculated responsivity of device; Unit:
 A/W * Phase: Measured photovoltage phase; Unit: degree (deg) * Frequency:
 frequency of NEP measurement; Unit: Hertz (Hz) * NEP: noise equivalent
 power; Unit: W Hz^(-1/2) * R: measured resistance of sample; Unit Ohm (Ω)
 * dR/dT: First derivative of Resistance against temperature; Unit:
 Ohm/Kelvin (Ω/K) * SHG intensity: Measured SHG intensity using
 photocounter; Unit: Count. * Angle: Incident THz wave polarization angle;
 Unit: degree (deg) * Photovoltage: measured photovoltage; Unit :arbitrary
 unit #### File: Figure1.xlsx **Description:** This file contains all data
 used for analyzing Figure1, including basic characterizations and
 calculation ##### Variables * Angle: incident polarization angle of 1040nm
 laser to excite SHG signal; Unit: degree (deg) * Normalized Intensity:
 normalized SHG intensity; Unit: arbitrary unit * I : applied a.c. current
 for Nonlinear Hall measurements; Unit: micro Ampere (uA) * V^2w: Measured
 nonlinear hall voltage at doubled frequency 2w; Unit: Volt (V) * kx/ky:
 wave vecor in k space; Unit: 2pi/a / 2pi/b (where a and b are lattice
 constants) * BCD : Berry curvature distribution in k space; Unit:
 Angstrom^3 #### File: Figure4.xlsx **Description:** This file contains all
 data used for analyzing Figure4, including the in-situ controlled
 measurements ##### Variables * Temperature: Sample temperature; Unit:
 Kelvin (K) * Voltage: Applied Gate Voltage; Unit: Volt (V) *
 Responsivity: measured and calculated responsivity of device; Unit: A/W *
 Phase: Measured photovoltage phase; Unit: degree (deg) * Material/Devices:
 showing the source of data which originates from different materials or
 devices at different working temperature #### File: SI\_SourceData.xlsx
 **Description:** This file contains all data used for analyzing
 Supplementary Information. ##### Variables * Raman Shift: wavenumbers of
 Raman signal shifted from Reighley peak; Unit: cm^-1 * Intensity:
 Intensity of Raman peaks measured with examination polarization along
 crystalline b and a axis; Unit: arbitrary unit * Thickness: The thickness
 measured by AFM; Unit: meter (m) * k: wave vector; Unit: (2pi/a) * Energy:
 Energy of the electronic state of dispersion; Unit: eV * Resistivity: The
 measured resistivity of sample; Unit: uOhm`cm * Conductivity: Measured
 conductivity of device; Unit: S^2 cm^2 * Nonlinear Efficiency: the ratio
 between measured nonlinear hall voltage and appied voltage * width/length:
 geometric scale of mapping; Unit: milimeter (mm) * Intensity: Measured
 intensity; Unit: arbitrary unit * B: Magnetic Field; Unit: Oe * Vab:
 VOltage between a and b axis end; Unit: uV * Time: time delay of
 pump-probe measurement; Unit: picoseconds (ps) * ETHz: electrical field of
 THz; Unit: arbitrary Units * Dac: Berrycurvature distribution in k-space;
 Unit: Angstrom^3 * LD: Linear Dichroism; Unit (%) * Phase: Measured
 photovoltage phase; Unit: degree (deg) * Temperature: Sample temperature;
 Unit: Kelvin (K) * Voltage: Applied Gate Voltage; Unit: Volt (V) ##
 Code/software * **Microsoft Excel** (Version 2010 or later) – To view and
 analyze the **all xlsx files.** ## Access information Other publicly
 accessible locations of the data: * NA Data was derived from the following
 sources: * NA