DOI: 10.57760/sciencedb.j00213.00086
title: The data of the article "Research on resistive switching characteristics of Cu/MgO/MoS2/Cu structure"
title: 《Cu/MgO/MoS2/Cu结构的电阻开关特性研究》文章关联数据

description: The data set mainly includes the structure diagram, I-V curve data, XRD pattern data, XPS pattern data and mechanism explanation diagram of the device. In this study, Cu/MgO/Cu, Cu/MgO/MoS2/Cu and Cu/MoS2/MgO/Cu devices were fabricated by magnetron sputtering. The resistive switching characteristics of three kinds of devices are compared by the characterization test and the measurement of I-V curve. The research shows that the MoS2 insertion layer does not change the main conduction mechanism of the device, but affects the regulatory effect of the interface barrier, and this effect is also related to the position of the MoS2 insertion layer. The dataset consists mainly of the following eight files, all named after the numbers of the graphs in the article. Document 1 mainly contains structural diagrams of the three devices and XRD data of MgO/MoS2/Cu (" fig 1,.CSV "; Excel), which is the data in Figure 1 of this article; File 2 mainly contains XPS map data of MgO/MoS2/Cu (" fig 2,.CSV "; Excel), which is the data in Figure 2 of this article; File 3 mainly contains I-V curve data of three devices (" fig 3,.CSV "; Excel), which is the data in Figure 3 of this article; File 4 mainly contains single-cycle comparison data of I-V curves of three devices (" fig 4,.CSV "; Excel), which is the data in Figure 4 of this article; File 5 mainly contains VReset and VSet distribution data of three devices (fig 5,.CSV; Excel), which is the data in Figure 5 in this article; File 6 mainly contains the distribution data of high and low resistance states of three devices (fig 6,.CSV; Excel), which is the data in Figure 6 of this article; File 7 mainly contains linear fitting data of three devices (" fig 7,.CSV "; Excel), which is the data in Figure 7 of this article. File 8 mainly contains the mechanism interpretation diagrams of three devices (" fig 8,.png ";). , which is the data in Figure 8 of this article. In particular, in addition to XRD and XPS data, all the data in this paper were processed by Excel and Origin, XRD data was processed by MDI Jade 6, and XPS data was processed by Avantage.
description: The data set mainly includes the structure diagram, I-V curve data, XRD pattern data, XPS pattern data and mechanism explanation diagram of the device. In this study, Cu/MgO/Cu, Cu/MgO/MoS2/Cu and Cu/MoS2/MgO/Cu devices were fabricated by magnetron sputtering. The resistive switching characteristics of three kinds of devices are compared by the characterization test and the measurement of I-V curve. The research shows that the MoS2 insertion layer does not change the main conduction mechanism of the device, but affects the regulatory effect of the interface barrier, and this effect is also related to the position of the MoS2 insertion layer. The dataset consists mainly of the following eight files, all named after the numbers of the graphs in the article. Document 1 mainly contains structural diagrams of the three devices and XRD data of MgO/MoS2/Cu (" fig 1,.CSV "; Excel), which is the data in Figure 1 of this article; File 2 mainly contains XPS map data of MgO/MoS2/Cu (" fig 2,.CSV "; Excel), which is the data in Figure 2 of this article; File 3 mainly contains I-V curve data of three devices (" fig 3,.CSV "; Excel), which is the data in Figure 3 of this article; File 4 mainly contains single-cycle comparison data of I-V curves of three devices (" fig 4,.CSV "; Excel), which is the data in Figure 4 of this article; File 5 mainly contains VReset and VSet distribution data of three devices (fig 5,.CSV; Excel), which is the data in Figure 5 in this article; File 6 mainly contains the distribution data of high and low resistance states of three devices (fig 6,.CSV; Excel), which is the data in Figure 6 of this article; File 7 mainly contains linear fitting data of three devices (" fig 7,.CSV "; Excel), which is the data in Figure 7 of this article. File 8 mainly contains the mechanism interpretation diagrams of three devices (" fig 8,.png ";). , which is the data in Figure 8 of this article. In particular, in addition to XRD and XPS data, all the data in this paper were processed by Excel and Origin, XRD data was processed by MDI Jade 6, and XPS data was processed by Avantage.