cometadata/datacite-titles-descriptions-related-identifiers huggingface dataset:
DOI: 10.24435/materialscloud:mz-ng
title: Phonon promoted charge density wave in topological kagome metal ScV₆Sn₆

description: Charge density wave (CDW) orders in vanadium-based kagome metals have recently received tremendous attention, yet their origin remains a topic of debate. The discovery of ScV₆Sn₆, a bilayer kagome metal featuring an intriguing √3 x √3 x 3 CDW order, offers a novel platform to explore the underlying mechanism behind the unconventional CDW. Here, we combine high-resolution angle-resolved photoemission spectroscopy, Raman scattering and density functional theory to investigate the electronic structure and phonon modes of ScV₆Sn₆. We identify topologically nontrivial surface states and multiple van Hove singularities (VHSs) in the vicinity of the Fermi level, with one VHS aligning with the in-plane component of the CDW vector near the K ̅ point. Additionally, Raman measurements indicate a strong electron-phonon coupling, as evidenced by a two-phonon mode and new emergent modes. Our findings highlight the fundamental role of lattice degrees of freedom in promoting the CDW in ScV₆Sn₆.
DOI: 10.14458/siam.res.2024.6
title: Exploring the Dalit activism in the fight for inclusiveness in internationalization of caste-based discrimination via the lens of the Transnational Advocacy Network Model(TAN), with a focus on Work and Descent-Based Discrimination, and Global Human Rights Law
DOI: 10.24435/materialscloud:ky-mp
title: Pd-doping of Bi₂Te₃ and superconductivity of Pd(Bi,Te)x from density functional theory

description: Materials that can host Majorana zero modes gained a lot of attention in recent years due to the possibility to engineer topologically protected quantum computing platforms. Promising candidates are heterostructures of topological insulators and superconductors. Here we present density-functional-theory-based calculations for Pd-doped Bi₂Te₃ and Pd(Bi,Te)x (x=1,2) in order to shed light on the superconducting properties in the self-formed superconducting phase when Pd is deposited on top of the topological insulator Bi₂Te₃.
This dataset accompanies a joint experiment/theory publication and publishes the related density functional theory calculations for:
- relaxed geometries for Pd intercalation in the Bi₂Te₃ vdW gap
- electronic structure of PdTe and PdTe₂ compared to alloy phases of Pd(Bi,Te) and Pd(Bi,Te)₂, collectively referred to as "xPBT"
- calculations for the superconducting state of xPBT phases within the Kohn-Sham Bogoliubov-de Gennes method
DOI: 10.24435/materialscloud:4c-f0
title: Pd-doping of Bi₂Te₃ and superconductivity of Pd(Bi,Te)x from density functional theory

description: Materials that can host Majorana zero modes gained a lot of attention in recent years due to the possibility to engineer topologically protected quantum computing platforms. Promising candidates are heterostructures of topological insulators and superconductors. Here we present density-functional-theory-based calculations for Pd-doped Bi₂Te₃ and Pd(Bi,Te)x (x=1,2) in order to shed light on the superconducting properties in the self-formed superconducting phase when Pd is deposited on top of the topological insulator Bi₂Te₃.
This dataset accompanies a joint experiment/theory publication and publishes the related density functional theory calculations for:
- relaxed geometries for Pd intercalation in the Bi₂Te₃ vdW gap
- electronic structure of PdTe and PdTe₂ compared to alloy phases of Pd(Bi,Te) and Pd(Bi,Te)₂, collectively referred to as "xPBT"
- calculations for the superconducting state of xPBT phases within the Kohn-Sham Bogoliubov-de Gennes method
DOI: 10.14458/siam.res.2024.7
title: Factors Influencing Customer Preferences and Behavior: A Comparative Study Between TikTok Shop and Shopee Live Among High School Students in Bangkok
DOI: 10.24435/materialscloud:kk-t5
title: Pd-doping of Bi₂Te₃ and superconductivity of Pd(Bi,Te)x from density functional theory

description: Materials that can host Majorana zero modes gained a lot of attention in recent years due to the possibility to engineer topologically protected quantum computing platforms. Promising candidates are heterostructures of topological insulators and superconductors. Here we present density-functional-theory-based calculations for Pd-doped Bi₂Te₃ and Pd(Bi,Te)x (x=1,2) in order to shed light on the superconducting properties in the self-formed superconducting phase when Pd is deposited on top of the topological insulator Bi₂Te₃.
This dataset accompanies a joint experiment/theory publication and publishes the related density functional theory calculations for:
- relaxed geometries for Pd intercalation in the Bi₂Te₃ vdW gap
- electronic structure of PdTe and PdTe₂ compared to alloy phases of Pd(Bi,Te) and Pd(Bi,Te)₂, collectively referred to as "xPBT"
- calculations for the superconducting state of xPBT phases within the Kohn-Sham Bogoliubov-de Gennes method
DOI: 10.24435/materialscloud:3v-c0
title: First-principles calculations of phonon-limited mobility for electrons and holes in highly-strained silicon

description: Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect has not yet been fully investigated theoretically. In this work, we perform first-principles calculations to explore the variations of the mobility for electrons and holes in silicon upon deformation by uniaxial strain up to 2% in the [100] crystal direction. We compare these theoretical results to the low-strain experimental piezoresistive effect for temperatures from 200 K to 400 K and find good agreement for the electron and hole mobilities. We confirm the small enhancement of the hole mobility observed experimentally at low strain as the latter increases. On top of that, we predict a strong enhancement of the mobility at higher strain. In particular, the hole mobility at 2%-strain is more than twice as large as that of unstrained silicon. Resorting to first-principles calculations is found to be particularly crucial for the holes for which the proximity of the valence bands and the important modification of their shapes under strain conditions limit the accuracy that can be achieved when adopting an analytic approach. Our findings highlight a new perspective to boost mobility, especially for the holes with a stress applied in the [100] direction. Additionally, we illustrate the advantages of using first-principles tools to study the piezoresistive effect in semiconductors.
DOI: 10.14458/siam.res.2024.8
title: Impact of Social Media Marketing on Consumer Behavior:A Case Study of the Clothing Industry in Colombo, SriLanka
DOI: 10.24435/materialscloud:3q-hs
title: Dataset for fracture and impact toughness of high-entropy alloys

description: Fracture dictates the service limits of metallic structures. Damage tolerance of materials may be characterized by fracture toughness rigorously developed from fracture mechanics, or less rigorous yet more easily obtained impact toughness (or impact energy as a variant). Given the promise of high-entropy alloys (HEAs) in structural and damage-tolerance applications, we compiled a dataset of fracture toughness and impact toughness/energy from the literature till mid-2022. The dataset is subdivided into three categories, i.e., fracture toughness, impact toughness, and impact energy, which contain 148, 14, and 78 distinct data records, respectively. On top of the alloy chemistry and measured fracture quantities, each data record also records the factors influential to fracture. Examples are material processing history, phase structure, grain size, uniaxial tensile properties such as yield strength and elongation, and testing conditions.
DOI: 10.14458/siam.res.2024.9
title: Impact of Social Media Networks on the Social Life of University Students
DOI: 10.24435/materialscloud:7w-9v
title: Oxygen evolution at the BiVO₄-water interface: mechanism of the water dehydrogenation reaction

description: We study the water dehydrogenation reaction at the BiVO₄(010)-water interface by combining nudged-elastic-band calculations and electronic structure calculations at the hybrid functional level. We investigate the pathway and the kinetic barrier for the adiabatic reaction going from the hole polaron localized in BiVO₄ to the dehydrogenation of the adsorbed water molecule at the interface. The reaction is found to involve the H2O•⁺ radical cation as intermediate, to have a kinetic barrier of 0.7 eV, and to be initiated by the electron transfer. The calculated kinetic barrier is in good agreement with experiment and is consistent with the slow hole transfer kinetics observed at the surface of BiVO₄. To characterize the structural changes occurring during this process, we analyze the O-H distances for three relevant water molecules. We also examine the Wannier functions around the O atom of the adsorbate involved in the reaction to reveal the changes in the electronic structure during the hole hopping. The projected density of states of the lowest unoccupied molecular orbitals allows us to identify the atomic orbitals that are primarily involved in the reaction. We expect that the proposed reaction mechanism generally holds when the surface coverage is dominated by molecularly adsorbed water.
DOI: 10.24435/materialscloud:1c-4n
title: Oxygen evolution at the BiVO₄-water interface: mechanism of the water dehydrogenation reaction

description: We study the water dehydrogenation reaction at the BiVO₄(010)-water interface by combining nudged-elastic-band calculations and electronic structure calculations at the hybrid functional level. We investigate the pathway and the kinetic barrier for the adiabatic reaction going from the hole polaron localized in BiVO₄ to the dehydrogenation of the adsorbed water molecule at the interface. The reaction is found to involve the H2O•⁺ radical cation as intermediate, to have a kinetic barrier of 0.7 eV, and to be initiated by the electron transfer. The calculated kinetic barrier is in good agreement with experiment and is consistent with the slow hole transfer kinetics observed at the surface of BiVO₄. To characterize the structural changes occurring during this process, we analyze the O-H distances for three relevant water molecules. We also examine the Wannier functions around the O atom of the adsorbate involved in the reaction to reveal the changes in the electronic structure during the hole hopping. The projected density of states of the lowest unoccupied molecular orbitals allows us to identify the atomic orbitals that are primarily involved in the reaction. We expect that the proposed reaction mechanism generally holds when the surface coverage is dominated by molecularly adsorbed water.
DOI: 10.24435/materialscloud:55-sd
title: Single-model uncertainty quantification in neural network potentials does not consistently outperform model ensembles

description: Neural networks (NNs) often assign high confidence to their predictions, even for points far out-of-distribution, making uncertainty quantification (UQ) a challenge. When they are employed to model interatomic potentials in materials systems, this problem leads to unphysical structures that disrupt simulations, or to biased statistics and dynamics that do not reflect the true physics. Differentiable UQ techniques can find new informative data and drive active learning loops for robust potentials. However, a variety of UQ techniques, including newly developed ones, exist for atomistic simulations and there are no clear guidelines for which are most effective or suitable for a given case. In this work, we examine multiple UQ schemes for improving the robustness of NN interatomic potentials (NNIPs) through active learning. In particular, we compare incumbent ensemble-based methods against strategies that use single, deterministic NNs: mean-variance estimation, deep evidential regression, and Gaussian mixture models. We explore three datasets ranging from in-domain interpolative learning to more extrapolative out-of-domain generalization challenges: rMD17, ammonia inversion, and bulk silica glass. Performance is measured across multiple metrics relating model error to uncertainty. Our experiments show that none of the methods consistently outperformed each other across the various metrics. Ensembling remained better at generalization and for NNIP robustness;  MVE only proved effective for in-domain interpolation, while GMM was better out-of-domain; and evidential regression, despite its promise, was not the preferable alternative in any of the cases. More broadly, cost-effective, single deterministic models cannot yet consistently match or outperform ensembling for uncertainty quantification in NNIPs.
DOI: 10.14458/siam.res.2024.10
title: Influence of Artificial Intelligence technology on the behavioral intention of International Students in Thai Universities
DOI: 10.24435/materialscloud:fq-nq
title: On-surface synthesis of anthracene-fused zigzag graphene nanoribbons from 2,7-dibromo-9,9'-bianthryl reveals unexpected ring rearrangements

description: On-surface synthesis has emerged as a powerful strategy to fabricate unprecedented forms of atomically precise graphene nanoribbons (GNRs). However, the on-surface synthesis of zigzag GNRs (ZGNR) has met with only limited success. In the paper where the data are discussed, we report the synthesis and on-surface reactions of 2,7-dibromo-9,9'-bianthryl as the precursor towards π-extended ZGNRs. Characterization by scanning tunneling microscopy and high-resolution noncontact atomic force microscopy clearly demonstrated the formation of anthracene-fused ZGNRs. Unique skeletal rearrangements were also observed, which could be explained by intramolecular Diels-Alder cycloaddition. Theoretical calculations of the electronic properties of the anthracene-fused ZGNRs revealed spin-polarized edge-states and a narrow bandgap of 0.20 eV.
DOI: 10.24435/materialscloud:4v-mb
title: On-surface synthesis of anthracene-fused zigzag graphene nanoribbons from 2,7-dibromo-9,9'-bianthryl reveals unexpected ring rearrangements

description: On-surface synthesis has emerged as a powerful strategy to fabricate unprecedented forms of atomically precise graphene nanoribbons (GNRs). However, the on-surface synthesis of zigzag GNRs (ZGNR) has met with only limited success. In the paper where the data are discussed, we report the synthesis and on-surface reactions of 2,7-dibromo-9,9'-bianthryl as the precursor towards π-extended ZGNRs. Characterization by scanning tunneling microscopy and high-resolution noncontact atomic force microscopy clearly demonstrated the formation of anthracene-fused ZGNRs. Unique skeletal rearrangements were also observed, which could be explained by intramolecular Diels-Alder cycloaddition. Theoretical calculations of the electronic properties of the anthracene-fused ZGNRs revealed spin-polarized edge-states and a narrow bandgap of 0.20 eV.
DOI: 10.24435/materialscloud:hn-kj
title: Phonon-limited mobility for electrons and holes in highly-strained silicon

description: Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mobility of electrons and holes in silicon upon deformation by uniaxial strain up to 2% in the [100] crystal direction. We compute the  π₁₁ and π₁₂ electron piezoresistances based on the low-strain change of resistivity with temperature in the range 200 K to 400 K, in excellent agreement with experiment. We also predict them for holes which were only measured at room temperature. Remarkably, for electrons in the transverse direction, we predict a minimum room-temperature mobility about 1200 cm²/Vs at 0.3% uniaxial tensile strain while we observe a monotonous increase of the longitudinal transport, reaching a value of 2200 cm²/Vs at high strain.  We confirm these findings experimentally using four-point bending measurements, establishing the reliability of our first-principles calculations. For holes, we find that the transport is almost unaffected by strain up to 0.3% uniaxial tensile strain and then rises significantly, more than doubling at 2% strain. Our findings open new perspectives to boost the mobility by applying a stress in the [100] direction. This is particularly interesting for holes for which shear strain was thought for a long time to be the only way to enhance the mobility.
DOI: 10.14458/siam.res.2024.11
title: Learner's Autonomy and Grit: A Study in Iranian EFL Context
DOI: 10.24435/materialscloud:f7-p6
title: Phonon-limited mobility for electrons and holes in highly-strained silicon

description: Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mobility of electrons and holes in silicon upon deformation by uniaxial strain up to 2% in the [100] crystal direction. We compute the  π₁₁ and π₁₂ electron piezoresistances based on the low-strain change of resistivity with temperature in the range 200 K to 400 K, in excellent agreement with experiment. We also predict them for holes which were only measured at room temperature. Remarkably, for electrons in the transverse direction, we predict a minimum room-temperature mobility about 1200 cm²/Vs at 0.3% uniaxial tensile strain while we observe a monotonous increase of the longitudinal transport, reaching a value of 2200 cm²/Vs at high strain.  We confirm these findings experimentally using four-point bending measurements, establishing the reliability of our first-principles calculations. For holes, we find that the transport is almost unaffected by strain up to 0.3% uniaxial tensile strain and then rises significantly, more than doubling at 2% strain. Our findings open new perspectives to boost the mobility by applying a stress in the [100] direction. This is particularly interesting for holes for which shear strain was thought for a long time to be the only way to enhance the mobility.
DOI: 10.24435/materialscloud:ez-6k
title: On-site and inter-site Hubbard corrections in magnetic monolayers: The case of FePS₃ and CrI₃

description: Hubbard-corrected density-functional theory has proven to be successful in addressing self-interaction errors in 3D magnetic materials. However, the effectiveness of this approach for 2D magnetic materials has not been extensively explored. Here, we use PBEsol+U and its extensions PBEsol+U+V to investigate the electronic, structural, and vibrational properties of 2D antiferromagnetic FePS₃ and ferromagnetic CrI₃, and compare the monolayers with their bulk counterparts. Hubbard parameters (on-site U and inter-site V) are computed self-consistently using density-functional perturbation theory, thus avoiding any empirical assumptions. We show that for FePS₃ the Hubbard corrections are crucial in obtaining the experimentally observed insulating state with the correct crystal symmetry, providing also vibrational frequencies in good agreement with Raman experiments. While empirical U can lead to an unstable ground-state (i.e. imaginary phonons), the system remains stable through the self-consistent process of calculating Hubbard parameters. 
For ferromagnetic CrI₃, we discuss how a straightforward application of Hubbard corrections worsens the results and introduces a spurious separation between spin-majority and minority conduction bands. Promoting the Hubbard U to be a spin-resolved parameter — that is, applying different (first-principles) values to the spin-up and spin-down manifolds — recovers a more physical picture of the electronic bands and delivers the best comparison with experiments.
DOI: 10.14458/siam.res.2024.12
title: Leveraging Thai Soft Power to Enhance Economic Diplomacy:Strategies and Outcomes
DOI: 10.24435/materialscloud:ce-bp
title: On-site and inter-site Hubbard corrections in magnetic monolayers: The case of FePS₃ and CrI₃

description: Hubbard-corrected density-functional theory has proven to be successful in addressing self-interaction errors in 3D magnetic materials. However, the effectiveness of this approach for 2D magnetic materials has not been extensively explored. Here, we use PBEsol+U and its extensions PBEsol+U+V to investigate the electronic, structural, and vibrational properties of 2D antiferromagnetic FePS₃ and ferromagnetic CrI₃, and compare the monolayers with their bulk counterparts. Hubbard parameters (on-site U and inter-site V) are computed self-consistently using density-functional perturbation theory, thus avoiding any empirical assumptions. We show that for FePS₃ the Hubbard corrections are crucial in obtaining the experimentally observed insulating state with the correct crystal symmetry, providing also vibrational frequencies in good agreement with Raman experiments. While empirical U can lead to an unstable ground-state (i.e. imaginary phonons), the system remains stable through the self-consistent process of calculating Hubbard parameters. 
For ferromagnetic CrI₃, we discuss how a straightforward application of Hubbard corrections worsens the results and introduces a spurious separation between spin-majority and minority conduction bands. Promoting the Hubbard U to be a spin-resolved parameter — that is, applying different (first-principles) values to the spin-up and spin-down manifolds — recovers a more physical picture of the electronic bands and delivers the best comparison with experiments.
DOI: 10.24435/materialscloud:1d-4y
title: Single-model uncertainty quantification in neural network potentials does not consistently outperform model ensembles

description: Neural networks (NNs) often assign high confidence to their predictions, even for points far out-of-distribution, making uncertainty quantification (UQ) a challenge. When they are employed to model interatomic potentials in materials systems, this problem leads to unphysical structures that disrupt simulations, or to biased statistics and dynamics that do not reflect the true physics. Differentiable UQ techniques can find new informative data and drive active learning loops for robust potentials. However, a variety of UQ techniques, including newly developed ones, exist for atomistic simulations and there are no clear guidelines for which are most effective or suitable for a given case. In this work, we examine multiple UQ schemes for improving the robustness of NN interatomic potentials (NNIPs) through active learning. In particular, we compare incumbent ensemble-based methods against strategies that use single, deterministic NNs: mean-variance estimation, deep evidential regression, and Gaussian mixture models. We explore three datasets ranging from in-domain interpolative learning to more extrapolative out-of-domain generalization challenges: rMD17, ammonia inversion, and bulk silica glass. Performance is measured across multiple metrics relating model error to uncertainty. Our experiments show that none of the methods consistently outperformed each other across the various metrics. Ensembling remained better at generalization and for NNIP robustness;  MVE only proved effective for in-domain interpolation, while GMM was better out-of-domain; and evidential regression, despite its promise, was not the preferable alternative in any of the cases. More broadly, cost-effective, single deterministic models cannot yet consistently match or outperform ensembling for uncertainty quantification in NNIPs.