DOI: 10.5061/dryad.b5mkkwht8
title: Patterned, low-temperature growth of transition metal dichalcogenides for low resistance raised contacts

description: Transition metal dichalcogenide (TMD) monolayers are promising channel
 materials for next-generation electronic devices. A challenge is the high
 contact resistance between monolayer TMDs and metal contacts, especially
 for holes. In this regard, raised source/drain contacts are promising.
 However, the direct, patterned growth of raised contacts at
 CMOS-compatible temperatures remains largely unresolved. We present
 plasma-free selenization and sulfurization of metal-oxides at substrate
 temperatures down to 400 °C, compatible with back-end-of-line (BEOL)
 thermal budgets. To achieve growth at such temperatures, gas-phase
 chalcogen precursors are first thermally activated at 950 °C. Films grown
 on single-crystal monolayer TMDs exhibit high crystal quality as
 confirmed by transmission electron microscopy. Raised contacts on
 WSe2 monolayers fabricated using this approach yield a low hole contact
 resistance of 0.3 kΩ·μm after chemical doping. This process is shown to be
 applicable to growing various TMDs, including WS2, MoSe2, MoS2, PtSe2, and
 NbS2.
description: # Patterned, low-temperature growth of transition metal dichalcogenides
 for low resistance raised contacts Dataset DOI:
 [10.5061/dryad.b5mkkwht8](https://doi.org/10.5061/dryad.b5mkkwht8) ##
 Description of the data and file structure Data for the main figures of
 the paper entitled "Patterned, Low-Temperature Growth of Transition
 Metal Dichalcogenides for Low Resistance Raised Contacts". Simulated
 mole fractions of selenium allotropes (Fig. 1b), Raman signal from grown
 WSe~2~ films based on different activation temperatures (Fig. 1e). Raman
 signal of WSe~2~ grown from various substrate temperatures (Fig. 2a).
 X-Ray Diffraction pattern of selenized WO~x~ films (Fig. 2b). Raman signal
 from various transition metal dichalcogenide films grown with our
 low-temperature growth method (Fig. 4b, Fig. 4c, and Fig. 4d). Transfer
 length method data for various lengths of short channel device (Fig. 5b
 and Fig. 5c). Top-gate device characteristics (Fig. 6b and 6c). ### Files
 and variables #### File: Files.zip **Description:** Each folder
 corresponds to the figure number in the main text.  **Folder 1:**
 Se_concentrations.xlsx has the simulated mole fraction of each selenium
 allotrope (Se, Se~2~, ..., Se~8~) using CANTERA, shown in Fig. 1b. Each
 sheet has the name of the allotrope (ex, Se2 for Se~2~). Unit of the
 x-axis is in °C (Temperature of the simulation). Unit of the y-axis is the
 mole fraction of the allotrope existing (dimensionless). Raman.xlsx has
 the Raman signal of WSe~2~ grown at 400 °C activation temperature (Fig. 1e
 in grey) in the sheet named '400 (Grey).' Raman signal of
 WSe~2~ grown at 950 °C activation temperature (Fig. 1e in red) in the
 sheet named '950 (Red).' Unit of the x-axis is in 1/cm
 (Wavenumber). Unit of the y-axis is the count of photons during the Raman
 measurement. **Folder 2:** Raman_Temperatures.xlsx has all the Raman
 signals of WSe~2~ grown at different substrate temperatures (140 °C,
 200 °C, 340 °C, and 410 °C) shown in Fig. 2a. Each sheet inside the file
 corresponds to the substrate temperature. Unit of the x-axis is in 1/cm
 (Wavenumber). Unit of the y-axis is the normalized count of photons during
 the Raman measurement. XRD.xlsx has x-ray diffraction data for the
 selenized tungsten oxide film shown in Fig. 2b. The unit of the x-axis is
 in degrees (2θ). The unit of the y-axis is the count of photons during the
 X-ray diffraction measurement. **Folder 4:** Raman_TMDs.xlsx has all the
 Raman data from various transition metal dichalcogenides other than WSe~2~
 grown for the paper (WTe~2~, WS~2~, MoSe~2~, MoS~2~, PtSe~2~, and NbS~2~)
 in Fig. 4. Each sheet name corresponds to the transition metal
 dichalcogenide. Unit of the x-axis is in 1/cm (Wavenumber). Unit of the
 y-axis is the normalized count of photons during the Raman measurement.
 **Folder 5:** TLM.xlsx has the transfer length measurement data from
 various channel length devices (0.21 μm, 0.36 μm, 0.62 μm, 0.82 μm, and
 1.1 μm) of exfoliated monolayer WSe~2~. Sheets named with numbers (0.21,
 0.36, 0.62, 0.82, and 1.1) have the current value (in μA/μm) at each
 biasing drain bias (in V). The sheet named 'TLM' has the values
 for Figure 5c, where column A has each length of the devices (0.21 μm,
 0.36 μm, 0.62 μm, 0.82 μm, and 1.1 μm), with column B having the
 corresponding total resistance of the device in kΩ∙μm. Column D has the
 x-axis value (channel length in μm) and the corresponding fitted total
 resistance in kΩ∙μm in Column E. **Folder 6:** Fig6b.xlsx has the top-gate
 device characteristics based on the top-gate bias of the device. Sheets
 named as 'V_DS=-4 V' and 'V_DS=-3 V' have the current
 values (in μA/μm) according to different top-gate biases (in V) when the
 drain bias is -4 V and -3 V, respectively. Sheet named I_TG has the
 top-gate leakage current values (in μA/μm) according to different top-gate
 biases (in V). Fig6c.xlsx has the top-gate device characteristics based on
 the drain bias of the device. Sheets named as 'V_TG=-4 V,'
 'V_TG=-2 V,' and V_TG=-1 V have the current values (in μA/μm)
 according to different drain biases (in V) when the top-gate is biased at
 -4 V, -2 V, and -1 V, respectively.