DOI: 10.17188/1722606
title: Materials Data on Si18O29 by Materials Project

description: Si18O29 crystallizes in the monoclinic P2/m space group. The structure is three-dimensional. there are twenty-four inequivalent Si sites. In the first Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There is two shorter (1.61 Å) and two longer (1.62 Å) Si–O bond length. In the second Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.61–1.63 Å. In the third Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.61–1.65 Å. In the fourth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There is one shorter (1.63 Å) and three longer (1.64 Å) Si–O bond length. In the fifth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.63–1.68 Å. In the sixth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.62–1.65 Å. In the seventh Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.62–1.64 Å. In the eighth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.60–1.63 Å. In the ninth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There is two shorter (1.61 Å) and two longer (1.63 Å) Si–O bond length. In the tenth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.61–1.65 Å. In the eleventh Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.61–1.65 Å. In the twelfth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.59–1.62 Å. In the thirteenth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.60–1.62 Å. In the fourteenth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.60–1.62 Å. In the fifteenth Si site, Si is bonded to four O atoms to form corner-sharing SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.62–1.67 Å. In the sixteenth Si site, Si is bonded in a trigonal non-coplanar geometry to one Si and three O atoms. The Si–Si bond length is 2.46 Å. There is one shorter (1.63 Å) and two longer (1.64 Å) Si–O bond length. In the seventeenth Si site, Si is bonded in a water-like geometry to two O atoms. There is one shorter (1.66 Å) and one longer (1.68 Å) Si–O bond length. In the eighteenth Si site, Si is bonded in a water-like geometry to two O atoms. There is one shorter (1.65 Å) and one longer (1.66 Å) Si–O bond length. In the nineteenth Si site, Si is bonded in a single-bond geometry to one O atom. The Si–O bond length is 1.69 Å. In the twentieth Si site, Si is bonded in a water-like geometry to two O atoms. Both Si–O bond lengths are 1.68 Å. In the twenty-first Si site, Si is bonded in a bent 120 degrees geometry to two O atoms. There is one shorter (1.70 Å) and one longer (1.72 Å) Si–O bond length. In the twenty-second Si site, Si is bonded in a water-like geometry to one Si and two O atoms. The Si–Si bond length is 2.67 Å. There is one shorter (1.65 Å) and one longer (1.66 Å) Si–O bond length. In the twenty-third Si site, Si is bonded in a trigonal non-coplanar geometry to one Si and three O atoms. The Si–Si bond length is 2.51 Å. There is two shorter (1.63 Å) and one longer (1.68 Å) Si–O bond length. In the twenty-fourth Si site, Si is bonded in a distorted tetrahedral geometry to four Si atoms. There are thirty-five inequivalent O sites. In the first O site, O is bonded in a linear geometry to two Si atoms. In the second O site, O is bonded in a linear geometry to two Si atoms. In the third O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the fourth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the fifth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the sixth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the seventh O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the eighth O site, O is bonded in a bent 120 degrees geometry to two Si atoms. In the ninth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the tenth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the eleventh O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the twelfth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the thirteenth O site, O is bonded in a distorted bent 150 degrees geometry to two equivalent Si atoms. In the fourteenth O site, O is bonded in a distorted bent 120 degrees geometry to two Si atoms. In the fifteenth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the sixteenth O site, O is bonded in a bent 120 degrees geometry to two Si atoms. In the seventeenth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the eighteenth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the nineteenth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the twentieth O site, O is bonded in a linear geometry to two Si atoms. In the twenty-first O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the twenty-second O site, O is bonded in a bent 120 degrees geometry to two Si atoms. In the twenty-third O site, O is bonded in a bent 120 degrees geometry to two Si atoms. In the twenty-fourth O site, O is bonded in a bent 120 degrees geometry to two Si atoms. In the twenty-fifth O site, O is bonded in a bent 120 degrees geometry to two equivalent Si atoms. In the twenty-sixth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the twenty-seventh O site, O is bonded in a bent 120 degrees geometry to two Si atoms. In the twenty-eighth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the twenty-ninth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the thirtieth O site, O is bonded in a bent 120 degrees geometry to two Si atoms. In the thirty-first O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the thirty-second O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the thirty-third O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the thirty-fourth O site, O is bonded in a bent 150 degrees geometry to two Si atoms. In the thirty-fifth O site, O is bonded in a bent 150 degrees geometry to two Si atoms.