DOI: 10.6084/m9.figshare.25594794
title: Source data related to manuscript entitled "Magneto-Ionic Vortices: Voltage-Reconfigurable Swirling-Spin Analog-Memory Nanomagnets" (NCOMMS-24-28379-A)

description: Source data includes Excel files with the following names: Fig. 1 Data: (i) Experimental hysteresis loops of FeCoN nanodots measured in-situ during voltage gating by magneto-optical Kerr effect; (ii) Energy-dispersive X-ray compositional analysis of as-grown FeCoN dots. Fig. 2 Data: Evolution of magnetic parameters (from experimental hysteresis loops): Kerr amplitude measured at saturation (Happlied = 2000 Oe), squareness ratio, saturation/annihilation field, nucleation field and coercivity. Fig. 3 Data: MOKE hysteresis loops for selected voltage-actuation times (short-term and long-term actuation under -25 V). Fig. 4 Data: Normalized EELS compositional line profiles of as-grown and treated FeCoN dots. Fig. 5 Data: Simulated hysteresis loops for selected thicknesses of generated magnetic phase (2, 8 and 12 nm), upon application of -25 V. Fig. S2 Data: In-situ measured MOKE hysteresis loops during voltage-actuation of FeCoN nanodots (-25 V, +25 V). Fig. S3 Data: Hysteresis loops measured by MOKE for as grown and – 25 V treated FeCoN film. Fig. S4 Data: Cyclability measurements (Kerr amplitude and voltage vs. time) upon successive gating with opposite voltage polarities (+10 V / -10 V). Fig. S6 Data: MOKE hysteresis loop obtained for the single 2 μm FeCo(N) dot after long-term negative voltage treatment. Fig. S9 Data: Simulated single-run hysteresis loops obtained for 280-nm diameter disks with Ms = 550 emu/cm^3 for L of 12 to 2 nm with (a) no anisotropy and no grains, (b) 5-nm grains with K = 4 × 10^5 erg/cm^3, and (c) 5-nm grains with decreasing K values (6.0, 5.2, 4.5, 4.0, 3.4, 3.0) × 10^5 erg/cm^3. Fig. S10 Data: Hysteresis loops for 280-nm diameter disks showing the single-run hysteresis loops (10 runs) as well as the average over the 10 runs. The parameters were selected to reproduce experimental results for a (a) short negative voltage treatment (L = 2 nm, Ms = 400 emu/cm^3, K = 2.5 × 10^5 erg/cm^3) (b) a mid-length negative voltage treatment (L = 8 nm, Ms = 500 emu/cm^3, Ku = 3.5 × 10^5 erg/cm^3) (c) the longest negative voltage treatment (L = 12 nm, Ms = 550 emu/cm^3, K = 6 × 10^5 erg/cm^3). Similar parameters to those used for L = 12 nm were then used to simulate the hysteresis loop expected for (d) a subsequent positive voltage treatment (L = 2 nm, Ms = 500 emu/cm^3, K = 6 × 10^5 erg/cm^3). Fig. S11 Data: Simulated single-run hysteresis loops (10 runs), as well as averaged hysteresis loop shown for 280-nm diameter magnetic disk with a thickness of 2 nm, Ms = 550 emu/cm^3, K = 6 × 10^5 erg/cm^3 and inter-grain exchange coupling of 30% of the underlying exchange value inside the grains (corresponding to long-term application of + 25 V). Fig. S12 Data: Simulated hysteresis loops for 280 nm diameter magnetic disks after long-term voltage treatment showing the effect of dipolar interactions. Parameters used are as previously established, i.e., thickness 12 nm, MS = 550 emu/cm3 , Ku = 6×105 erg/cm3. The curve“1 disk” represents a single disk using the original parameters as described in the text. The “PBC 4” curve shows hysteresis loops that include dipolar interactions, accounted for by applying periodic boundary conditions. The “PBC 1” curve serves as a control for PBC4, illustrating the loops for disks with PBC switched off (i.e., no interactions between the dots). Fig. S13 Data: Calculated normalized annihilation field HA/HA(isolated) for arrays of 280 nm nanodots with three thicknesses of generated magnetic phase L = 2, 6, 12 nm.