DOI: 10.57760/sciencedb.24439
title: Edge-contacted MoTe2-NbS2 heterojunction photodetectors with high-performance, self-powered and stable broadband detection based on optical manipulation preparation
title: 基于光学操纵制备的高性能、自供电和稳定宽带检测的边缘接触MoTe2-NbS2异质结光电探测器

description:  Photodetectors, as fundamental components of modern optoelectronic systems, hold significant potential across various domains including communications, healthcare, and military reconnaissance. Heterojunctions play a crucial role in enhancing carrier separation through interface energy band engineering, thereby enabling high-performance detection. Furthermore, metal–semiconductor edge contacts can further optimize device performance, though conventional fabrication methods are often complex, time-consuming, and risk inducing material damage. We proposed a novel approach for realizing edge contact between 2D semiconductors and metals by using femtosecond laser-driven nanosheets moving on a substrate. MoTe₂ and NbS₂ nanosheets were precisely assembled into edge-contact heterojunction photodetectors by combining dry transfer techniques with optical manipulation. The device exhibited excellent responsivity (2 A/W), specific detectivity (1.36×10⁸ Jones), and quantum efficiency (278%) at 900 nm. Additionally, the photodetectors exhibited fast response times of 30/46 μs, a response bandwidth of 5.4 kHz, making it suitable for high-speed optical signal detection. Significantly, the detectors showed broadband optical response spanning 280–1380 nm, with a stable responsivity maintained between 280 and 1200 nm. The optical manipulation scheme also provides new solutions for the preparation of transverse heterojunction, customized edge-contact structure, and modulation of heterojunction junction area, which injects new momentum for the development of future optoelectronic devices
description:  Photodetectors, as fundamental components of modern optoelectronic systems, hold significant potential across various domains including communications, healthcare, and military reconnaissance. Heterojunctions play a crucial role in enhancing carrier separation through interface energy band engineering, thereby enabling high-performance detection. Furthermore, metal–semiconductor edge contacts can further optimize device performance, though conventional fabrication methods are often complex, time-consuming, and risk inducing material damage. We proposed a novel approach for realizing edge contact between 2D semiconductors and metals by using femtosecond laser-driven nanosheets moving on a substrate. MoTe₂ and NbS₂ nanosheets were precisely assembled into edge-contact heterojunction photodetectors by combining dry transfer techniques with optical manipulation. The device exhibited excellent responsivity (2 A/W), specific detectivity (1.36×10⁸ Jones), and quantum efficiency (278%) at 900 nm. Additionally, the photodetectors exhibited fast response times of 30/46 μs, a response bandwidth of 5.4 kHz, making it suitable for high-speed optical signal detection. Significantly, the detectors showed broadband optical response spanning 280–1380 nm, with a stable responsivity maintained between 280 and 1200 nm. The optical manipulation scheme also provides new solutions for the preparation of transverse heterojunction, customized edge-contact structure, and modulation of heterojunction junction area, which injects new momentum for the development of future optoelectronic devices