DOI: 10.58132/niekns
title: Data sources for article: Photoluminescence efficiency of MBE-grown MoSe2 monolayers featuring narrow excitonic lines and diverse grain structures

description: This data was used as a foundation for the article by Mateusz Raczyński, Julia Kucharek, Kacper Oreszczuk, Aleksander Rodek, Tomasz Kazimierczuk, Rafał Bożek, Takashi Taniguchi, Kenji Watanabe, Wojciech Pacuski, and Piotr Kossacki. That was published in Journal of Luminescence.The archive contains the data used for the creation of all figures presented in the publication.Fig. 1 consists of four AFM measured height maps 800nm by 800nm in size. It is saved in a .gwy format used by a popular SPM visualisation and analysis software, 'Gwyddion'. The filenames are associated with subsequent MBE-grown sample names that were investigated UW1514, UW1870, UW1876, UW1930.Fig. 2 are the ASCII-coded plots. The left panel presents the photoluminescence spectra of five different samples. The x-axis is in units of energy (meV) and the y-axis is accordingly the PL intensity in 'spectrometer counts'. The right panel consists of the Raman scattering spectra in (arb.u.), and x-axis in units of inverse centimetres (cm^-1). The comment in the header indicates a particular MBE-grown sample and the hBN flake number noted as fxx, where xx is an arbitrary number-letter marking used during the measurements. The plots in Fig.2. were normalised and vertically offset for better comparison. The PL was in linear scale and Raman was in log-scale.Fig. 3 are the same plots like in Fig.2. but with all linear y-scale, the left one presents Raman spectra and the right the PL spectra, in the comment part of the header, the name of the appropriate hBN flakes (fxx) and their (hBNs) thickness in nanometers is provided. All these measurements were performed on the sample UW1870.Fig. 4 contains two measured and two calculated reflectance spectra for hBN of thicknesses 13.5nm and 491nm, respectively. The x-axis is in nanometers, the y-axis is unitless, because it is the measured(calculated) reflectance from the structure MoSe2/hBN/SiO2/Si divided by the reference of reflectance from just SiO2/Si.Fig. 5 consists of experimental data points, i.e., integrated PL and Raman intensities and the AFM-measured thicknesses of appropriate hBN flakes - presented as the scattered plots - and - the model-calculated PL/Ramans enhancement for a range of hBN thicknesses - that were presented on graphs as the dashed lines. The model is described in the manuscript, and it is simply based on a popularly used TMM (transfer matrix method). The experimental data is also described with the names of hBN spots at which the measurement took place. The sample being measured here was UW1870.Fig. 6 shows two plots. The left one presents the PL and Raman intrinsic brightnesses normalised by the one measured reference exfoliated sample. Therefore, the y-axis is relative in (%) and the x-axis is the monolayer (ML) coverage (in units of % too) read from the data presented in Fig.1. The right-hand side plot is the linewidth obtained from the fitted spectra for the charged and neutral excitons in units of (meV) vs the same x-axis - ML coverage (%).Fig. 7 is the graph presenting the same data as the one in Fig. 6a, but in the form of PL intensity vs Raman intensity. The ML coverage is the label for all five points for easier related sample identification. The fifth point relates to the newest sample, UW2156, not yet presented in previous graphs (ML coverage of 38%).Fig. 8 consists of two PL spectra in the same format as Fig. 2. Still, the y-axis has been modified to account for the different partial ML coverage and interference enhancement/suppression factors and to compare the PL efficiency of those two samples, UW1514 (ML coverage 27%) and UW2156 (ML coverage 38%). The x-axis is in energy units of (meV).Fig. 9 is the AFM height map of the sample UW2156 (ML coverage 38%) in the same format as Fig. 1.