DOI: 10.5281/zenodo.18225852
title: Electron-hole propagators from high-order sideband polarimetry in bulk GaAs and effective-Hamiltonian parameters from Monte Carlo simulations

description: The mat file Exp_propagator_data.mat contains data on electron-hole propagators in bulk GaAs generated based on polarimetry of high-order sidebands under strong, linearly polarized THz fields. In this file, there are five cell arrays, mean_absqhhlh, mean_cosqhhlh, mean_sinqhhlh, qhh_nn0, and qlh_nn0, corresponding to the absolute value of the ratio of E-HH (electron-heavy hole) and E-LH (electron-light hole) propagators, the cosine and sine of the argument of this ratio, the absolute values of the E-HH and E-LH propagators relative to their values at sideband order 12, respectively. The cell indices correspond to three NIR-laser wavelengths used in the polarimetry experiments, 819.5, 818, and 815 nm. Each of these cell arrays has the dimension 14*4*3 corresponding to 14 sidebands (sideband indices from 12 to 38), 4 NIR-laser polarizations (left-handed circular polarization with helicity -1, right-handed circular polarization with helicity +1, linear polarization at 45 degrees to the THz electric field, and linear polarization at −45 degrees to the THz electric field), and 3 THz-field strength (from high to low detailed in THz_field_strength.mat). The corresponding one standard deviations are stored in the cell arrays err_absqhhlh, err_cosqhhlh, err_sinqhhlh, err_qhhnn0, and err_qlhnn0. For each of the three NIR-laser wavelengths, 1000 random values of the Luttinger-parameter ratio γ3/γ2 are generated for calculating the electron-hole propagators and stored in the cell array data_gammaratioran. 

The mat file THz_field_strength.mat contains data of the THz-field strength. In this file, there are two cell arrays, Fmean_thz and Fvar_thz, corresponding the mean value and one standard deviation of the THz field. The cell indices correspond to three NIR-laser wavelengths used in the polarimetry experiments, 819.5, 818, and 815 nm. Each of these cell arrays has the dimension 3*4 corresponding to 3 THz-field strength (from high to low detailed in THz_field_strength.mat) and 4 NIR-laser polarizations (left-handed circular polarization with helicity -1, right-handed circular polarization with helicity +1, linear polarization at 45 degrees to the THz electric field, and linear polarization at −45 degrees to the THz electric field). 

The mat files random_variables1.mat and random_variables2.mat contain data from two Monte Carlo simulations in extracting effective-Hamiltonian parameters of bulk GaAs and dephasing constants of the electron-hole coherences.

In random_variables1.mat, m_cran, gamma_1ran, gamma_2ran, and gamma_ratioran are randomly generated values for conduction-band effective mass in units of electron rest mass, the Luttinger parameters γ1 and γ2, and the Luttinger-parameter ratio γ3/γ2, respectively; deph_hh and deph_lh are extracted dephasing constants of the E-HH and E-LH coherences, respectively; Eg_lh is the extracted E-LH bandgap; Fthz_ran are THz-field strengths randomly generated based on the mean values and one stardard deviations recorded in THz_field_strength.mat. The variable Fthz_ran has the dimension 3*4*3*10000 corresponding to 3 THz-field strength (from high to low detailed in THz_field_strength.mat), 4 NIR-laser polarizations (left-handed circular polarization with helicity -1, right-handed circular polarization with helicity +1, linear polarization at 45 degrees to the THz electric field, and linear polarization at −45 degrees to the THz electric field), 3 NIR-laser wavelengths, and 10000 random numbers.

 

In random_variables2.mat, m_cran, gamma_1ran, and gamma_ratioran are randomly generated values for conduction-band effective mass in units of electron rest mass, the Luttinger parameter γ1, and the Luttinger-parameter ratio γ3/γ2, respectively; deph_hh and deph_lh are extracted dephasing constants of the E-HH and E-LH coherences, respectively; Eg_lh is the extracted E-LH bandgap; xi_ran is the extracted Hamiltonian parameter ξ; Fthz_ran are THz-field strengths randomly generated based on the mean values and one stardard deviations recorded in THz_field_strength.mat. The variable Fthz_ran has the dimension 3*4*3*10000 corresponding to 3 THz-field strength (from high to low detailed in THz_field_strength.mat), 4 NIR-laser polarizations (left-handed circular polarization with helicity -1, right-handed circular polarization with helicity +1, linear polarization at 45 degrees to the THz electric field, and linear polarization at −45 degrees to the THz electric field), 3 NIR-laser wavelengths, and 10000 random numbers.

 

The polarimetry of high-order sidebands was performed by Seamus D. O’Hara with assistance from Joseph B. Costello. Loren N. Pfeiffer and Ken W. West grew the GaAs crystal. Mark S. Sherwin acquired funding and supervised the project.