title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð°ÐºÑÐµÐ¿ÑÐ¾ÑÐ½ÑÑ ÑÑÐ¾Ð²Ð½ÐµÐ¸Ì Ð² ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼Ð°Ñ GaAs/AlGaAs Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÑ Ð±ÐµÑÐ¸Ð»Ð»Ð¸ÐµÐ¼
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Investigations of acceptor levels in GaAs/AlGaAs quantum wells doped with beryllium
Creators: name: Ð Ð¾Ð´Ð¸Ð¾Ð½Ð¾Ð², ÐÐ»ÐµÐºÑÐµÐ¹
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¼Ñ
ÑÐ°Ð·Ð¼ÐµÑÐ½Ð¾Ðµ ÐºÐ²Ð°Ð½ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ
Ð°ÐºÑÐµÐ¿ÑÐ¾ÑÐ½ÑÐµ ÑÑÐ¾Ð²Ð½Ð¸
Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¿ÐµÑÐµÑ Ð¾Ð´Ñ
Ð¿Ð¾Ð³Ð»Ð¾ÑÐµÐ½Ð¸Ðµ ÑÐ²ÐµÑÐ°
ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ
Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÐµ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÑ
quantum wells
dimensional quantization
acceptor levels
optical transitions
light absorption
photoluminescence
semiconductor heterostructures

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼ GaAs/AlGaAs, Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÑ Ð±ÐµÑÐ¸Ð»Ð»Ð¸ÐµÐ¼. Ð¦ÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¾ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ðµ ÑÐ¿ÐµÐºÑÑÐ¾Ð² Ð¿Ð¾Ð³Ð»Ð¾ÑÐµÐ½Ð¸Ñ ÑÐ²ÐµÑÐ° Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð¸Ì Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÑ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ Ð² ÑÐ¸ÑÐ¾ÐºÐ¾Ð¼ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ Ð´Ð»Ñ Ð±Ð¾Ð»ÐµÐµ Ð¿Ð¾Ð´ÑÐ¾Ð±Ð½Ð¾Ð³Ð¾ Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ ÑÐ½ÐµÑÐ³ÐµÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÐ¿ÐµÐºÑÑÐ° Ð°ÐºÑÐµÐ¿ÑÐ¾ÑÐ¾Ð² Ð¸ Ð´ÑÑÐ¾Ðº Ð² Ð²Ð°Ð»ÐµÐ½ÑÐ½Ð¾Ð¸Ì Ð·Ð¾Ð½Ðµ. ÐÐ»Ñ ÑÑÐ¾Ð³Ð¾ Ð±ÑÐ»Ð¸ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ñ: ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸Ð·Ð°ÑÐ¸Ñ ÑÑÑÑÐºÑÑÑ GaAs/AlGaAs; Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ Ð²ÐµÐ»Ð¸ÑÐ¸Ð½Ñ ÑÐ½ÐµÑÐ³Ð¸Ð¸ ÑÐ²ÑÐ·Ð¸ Ð°ÐºÑÐµÐ¿ÑÐ¾ÑÐ¾Ð² Ð¿ÑÑÐµÐ¼ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð¸Ì Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐ»ÐµÐºÑÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¾ÑÑÐ¸; ÑÐ½ÑÑÐ¸Ðµ Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð°ÑÐ¸Ð¾Ð½Ð½ÑÑ ÑÐ¿ÐµÐºÑÑÐ¾Ð² Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ ÑÐ²ÐµÑÐ° Ð¿ÑÐ¾ÑÐµÐ´ÑÐµÐ³Ð¾ ÑÐµÑÐµÐ· Ð¾Ð±ÑÐ°Ð·ÐµÑ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ Ð¸ ÑÐµÑÐµÐ· ÑÐµÑÐµÑÐµÐ½ÑÐ½ÑÐ¸Ì Ð¾Ð±ÑÐ°Ð·ÐµÑ Ð±ÐµÐ· ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼ Ð² Ð¼Ð½Ð¾Ð³Ð¾Ð¿ÑÐ¾ÑÐ¾Ð´Ð½Ð¾Ð¸Ì Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ð¸ Ð´Ð»Ñ Ð´Ð°Ð»ÑÐ½ÐµÐ¸ÌÑÐµÐ³Ð¾ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ ÑÐ¿ÐµÐºÑÑÐ¾Ð² Ð¿Ð¾Ð³Ð»Ð¾ÑÐµÐ½Ð¸Ñ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð´Ð²ÑÑ ÑÐ°Ð·Ð½ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¸Ðº. ÐÐ»Ñ Ð¾ÑÐµÐ½ÐºÐ¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð² Ð¿ÑÐµÐ´Ð²Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ Ð±ÑÐ»Ð¸ ÑÐ°ÑÑÑÐ¸ÑÐ°Ð½Ñ Ð·Ð½Ð°ÑÐµÐ½Ð¸Ñ ÑÐ½ÐµÑÐ³ÐµÑÐ¸ÑÐµÑÐºÐ¸Ñ Ð¿ÐµÑÐµÑÐ¾Ð´Ð¾Ð² Ð² Ð¸ÑÑÐ»ÐµÐ´ÑÐµÐ¼Ð¾Ð¸Ì ÑÑÑÑÐºÑÑÑÐµ. ÐÐ°Ð½Ð½ÑÐµ, ÐºÐ¾ÑÐ¾ÑÑÐµ Ð±ÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ Ð² ÑÐ¾Ð´Ðµ ÑÐ°Ð±Ð¾ÑÑ, Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¸ ÑÐ¾ÑÐ¾ÑÐµÐµ ÑÐ¾Ð³Ð»Ð°ÑÐ¸Ðµ Ñ ÑÐ°ÑÑÑÐ¸ÑÐ°Ð½Ð½ÑÐ¼Ð¸ Ð·Ð½Ð°ÑÐµÐ½Ð¸ÑÐ¼Ð¸, ÑÑÐ¾ Ð³Ð¾Ð²Ð¾ÑÐ¸Ñ Ð¾ Ð¿ÑÐ°Ð²Ð¸Ð»ÑÐ½Ð¾Ð¸Ì Ð¸Ð½ÑÐµÑÐ¿ÑÐµÑÐ°ÑÐ¸Ð¸ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð².
description: This work is devoted to the study of GaAs/AlGaAs quantum wells doped with beryllium. The aim of the work was to obtain the light absorption spectra of a semiconductor heterostructure with quantum wells in a wide temperature range. Obtained results: characterization of GaAs/AlGaAs structures; determination of the binding energy of acceptors by measuring the temperature dependence of electrical conductivity; measuring the polarized intensity spectra of light transmitted through a sample with quantum wells and through a reference sample without quantum wells in multipass geometry. In order to evaluate the obtained results, the energy levels in the studied structure were preliminarily calculated. The obtained experimental results shown good agreement with the theoretical calculations, which indicates a correct interpretation of the results.