title: Optical properties of close-to-surface self-assembled InAs/GaAs quantum dots
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: ÐÐ¿ÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð¿ÑÐ¸Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ½ÑÑ ÑÐ°Ð¼Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸Ð·Ð¾Ð²Ð°Ð½Ð½ÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¾ÑÐµÐº InAs/GaAs
Creators: name: Abhiroop Chellu
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2018
Subjects: ÐÑÐ¸ÐµÐ¼Ð½Ð¸ÐºÐ¸ Ð¾Ð¿ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐµ
Ð¡Ð¾Ð»Ð½ÐµÑÐ½ÑÐµ Ð±Ð°ÑÐ°ÑÐµÐ¸
ÐÐµÐ½ÐµÑÐ°ÑÐ¾ÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ
ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¾ÑÐºÐ¸

description: Quantum dots are novel semiconductor nanostructures that show great potential to be the future of a wide range of nanoscale optoelectronic device applications like photodetectors, solar cells and lasers. Self-assembled InAs QDs grown in a GaAs matrix are proposed to be the primary elements for single and entangled photon sources used in quantum cryptography and quantum information processing. In order to incorporate quantum dots into optoelectronic and nanophotonic applications, they need to be fabricated close to the device surface. Generally, a semiconductor-capping layer is overgrown on the quantum dots to stabilize them and minimize surface effects. The purpose of this thesis is to investigate the effects of a GaAs capping layer on the optical properties of the InAs quantum dots. The interaction between the zero-dimensional quantum dot states and surface states are studied on close-to-surface individual quantum dots that have well-defined electronic structure. Capping the QDs has a significant effect on the structural and optical properties. The influence the capping layer of varying thickness on the optical properties of QDs has been experimentally investigated using low-temperature photoluminescence spectroscopy, micro-photoluminescence spectroscopy and time-resolved photoluminescence spectroscopy.
description: ÐÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¾ÑÐºÐ¸ ÑÐ²Ð»ÑÑÑÑÑ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½ÑÐ¼ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð¼ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ ÑÐ°ÐºÐ¸Ñ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð² Ð½Ð°Ð½Ð¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸ ÐºÐ°Ðº ÑÐ¾ÑÐ¾Ð¿ÑÐ¸ÐµÐ¼Ð½Ð¸ÐºÐ¸, ÑÐ¾Ð»Ð½ÐµÑÐ½ÑÐµ ÑÐ»ÐµÐ¼ÐµÐ½ÑÑ Ð¸ Ð»Ð°Ð·ÐµÑÑ. Ð¡Ð°Ð¼Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸Ð·Ð¾Ð²Ð°Ð½Ð½ÑÐµ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¾ÑÐºÐ¸ InAs Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÐµ Ð² Ð¼Ð°ÑÑÐ¸ÑÐµ GaAs Ð¼Ð¾Ð³ÑÑ ÑÑÐ°ÑÑ Ð¾ÑÐ½Ð¾Ð²Ð½ÑÐ¼ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð¼ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð¾Ð´Ð½Ð¾ÑÐ¾ÑÐ¾Ð½Ð½Ð¾Ð³Ð¾ Ð¸ Ð¼Ð½Ð¾Ð³Ð¾ÑÐ¾ÑÐ¾Ð½Ð½Ð¾Ð³Ð¾ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ°, Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÐµÐ¼Ð¾Ð³Ð¾ Ð² ÐºÑÐ¸Ð¿ÑÐ¾Ð³ÑÐ°ÑÐ¸Ð¸. ÐÐ»Ñ Ð²Ð½ÐµÐ´ÑÐµÐ½Ð¸Ñ ÑÐ°ÐºÐ¸Ñ ÑÑÑÑÐºÑÑÑ Ð¸Ñ Ð½ÐµÐ¾Ð±ÑÐ¾Ð´Ð¸Ð¼Ð¾ ÑÐ°ÑÑÐ¸ÑÑ Ð½Ð° Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð². ÐÐ´Ð½Ð°ÐºÐ¾ ÐºÐ°Ðº Ð¿ÑÐ°Ð²Ð¸Ð»Ð¾ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¾ÑÐºÐ¸ Ð¿Ð¾ÑÐ»Ðµ ÑÐ¾ÑÑÐ° Ð·Ð°ÑÐ°ÑÐ¸Ð²Ð°ÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð¼ Ð¼Ð°ÑÑÐ¸ÑÑ GaAs. ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð°Ð½Ð°Ð»Ð¸Ð·Ñ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð´Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¿Ð¾ÐºÑÐ¾Ð²Ð½Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ Ð½Ð° Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¾ÑÐµÐº. ÐÐ¾Ð¼Ð¸Ð¼Ð¾ ÑÑÐ¾Ð³Ð¾ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ð¸ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¾ÑÐµÐº Ð½Ð° ÑÑÑÑÐºÑÑÑÐ½ÑÐµ Ð¸ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¾ÑÐµÐº. Ð ÐºÐ°ÑÐµÑÑÐ²Ðµ Ð¼ÐµÑÐ¾Ð´Ð¸Ðº ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸Ð·Ð°ÑÐ¸Ð¸ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð»Ð¸ÑÑ ÑÐ°ÐºÐ¸Ðµ Ð¼ÐµÑÐ¾Ð´Ð¸ÐºÐ¸ ÐºÐ°Ðº Ð½Ð¸Ð·ÐºÐ¾ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð°Ñ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ (Ð² ÑÐ¾Ð¼ ÑÐ¸ÑÐ»Ðµ Ð¼Ð¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ Ð¸ Ð²ÑÐµÐ¼ÑÑÐ°Ð·ÑÐµÑÐµÐ½Ð½Ð°Ñ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ), SEM Ð¸ AFM ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ.