title: Ð§Ð¸ÑÐ»ÐµÐ½Ð½Ð¾Ðµ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÑÐ¾ÑÑÐ° Ð½Ð¸ÑÑÐ¸Ð´Ð½ÑÑ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¸Ð· Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐ¾ÐµÐ´Ð¸Ð½ÐµÐ½Ð¸Ð¹ Ð² Ð³Ð¾ÑÐ¸Ð·Ð¾Ð½ÑÐ°Ð»ÑÐ½Ð¾Ð¼ CVD ÑÐµÐ°ÐºÑÐ¾ÑÐµ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Numerical simulation of metalorganic nitride crystal growth in a horizontal CVD reactor
Creators: name: ÐÐ³Ð½Ð°ÑÐµÐ½ÐºÐ¾, ÐÐ¸ÐºÑÐ¾Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: ÐÐ¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ
Ð§Ð¸ÑÐ»ÐµÐ½Ð½ÑÐµ Ð¼ÐµÑÐ¾Ð´Ñ
ÐÑÐ¸ÑÑÐ°Ð»Ð»Ñ
horizontal hot-wall CVD reactor
Ð½Ð¸ÑÑÐ¸Ð´ Ð°Ð»ÑÐ¼Ð¸Ð½Ð¸Ñ-Ð³Ð°Ð»Ð»Ð¸Ñ
ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
aluminium-gallium nitride
epitaxy

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° ÑÐ¸ÑÐ»ÐµÐ½Ð½Ð¾Ð¼Ñ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÐµÐ¿Ð»Ð¾- Ð¸ Ð¼Ð°ÑÑÐ¾Ð¿ÐµÑÐµÐ½Ð¾ÑÐ° Ð² Ð³Ð¾ÑÐ¸Ð·Ð¾Ð½ÑÐ°Ð»ÑÐ½Ð¾Ð¼ ÐÐÐ¡ÐÐ¤Ð­ ÑÐµÐ°ÐºÑÐ¾ÑÐµ Â«Dragon 200Â» Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐµÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ Ð¿Ð¾Ð´Ð°ÑÐ¸ ÑÐµÐ°Ð³ÐµÐ½ÑÐ¾Ð² Ð½Ð° Ð½ÐµÐ¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð²ÑÑÐ°ÑÐ¸Ð²Ð°ÐµÐ¼Ð¾Ð³Ð¾ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð°. ÐÐ°Ð´Ð°ÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐµÑÐ°Ð»Ð¸ÑÑ Ð² ÑÐ¾Ð´Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ: 1. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ ÑÐ¸ÑÐ»ÐµÐ½Ð½Ð¾Ð³Ð¾ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÐµÐ¿Ð»Ð¾- Ð¼Ð°ÑÑÐ¾Ð¿ÐµÑÐµÐ½Ð¾ÑÐ° Ñ ÑÑÑÑÐ¾Ð¼ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÐ¾Ð¿ÑÑÐ¶ÑÐ½Ð½ÑÑ ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð². 2. ÐÐµÑÐ¸ÑÐ¸ÐºÐ°ÑÐ¸Ñ ÑÑÑÐµÑÑÐ²ÑÑÑÐµÐ¹ Ð¼Ð¾Ð´ÐµÐ»Ð¸ ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÐµÐ°Ð³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ. 3. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐµÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ Ð¿Ð¾Ð´Ð°ÑÐ¸ ÑÐµÐ°Ð³ÐµÐ½ÑÐ¾Ð² Ð½Ð° Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÑ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ° Ð¸ ÑÐ¾ÑÑÐ°Ð²Ð° ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð°. 4. ÐÑÑÐ°Ð±Ð¾ÑÐºÐ° ÑÐµÐºÐ¾Ð¼ÐµÐ½Ð´Ð°ÑÐ¸Ð¹ Ð´Ð»Ñ ÑÐ»ÑÑÑÐµÐ½Ð¸Ñ Ð½ÐµÐ¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÐ¸ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð°. Ð Ð°Ð±Ð¾ÑÐ° Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¾ÑÑ ÑÐ¾Ð²Ð¼ÐµÑÑÐ½Ð¾ Ñ Ð¤Ð¸Ð·Ð¸ÐºÐ¾-Ð¢ÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¼ Ð¸Ð½ÑÑÐ¸ÑÑÑÐ¾Ð¼, Ð³Ð´Ðµ ÑÐ°Ð·ÑÐ°Ð±Ð°ÑÑÐ²Ð°ÐµÑÑÑ ÑÐµÐ°ÐºÑÐ¾Ñ Â«Dragon 200Â». ÐÑÐ»Ð¸ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ñ Ð²ÐµÑÐ¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½ÑÐµ ÑÐ°ÑÑÑÑÑ Ð´Ð»Ñ Ð¼Ð¾Ð´ÐµÐ»Ð¸ ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÐµÐ°Ð³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ. ÐÑÐ»Ð¾ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¾ Ð¸ Ð¿ÑÐ¾Ð°Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð¾ ÑÐµÑÐµÐ½Ð¸Ðµ Ñ Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¿Ð¾Ð´Ð°ÑÐµÐ¹ ÑÐµÐ°Ð³ÐµÐ½ÑÐ¾Ð². ÐÐ°ÑÐµÐ¼ Ð±ÑÐ»Ð¾ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¾ Ð½ÐµÑÐºÐ¾Ð»ÑÐºÐ¾ Ð²Ð°ÑÐ¸Ð°Ð½ÑÐ¾Ð² Ñ ÑÐµÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ Ð¿Ð¾Ð´Ð°ÑÐµÐ¹ ÑÐµÐ°Ð³ÐµÐ½ÑÐ¾Ð². ÐÑÐ¾Ð°Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð¿Ð¾Ð½Ð¸Ð¶ÐµÐ½Ð¸Ñ Ð¸ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ñ ÑÐ°ÑÑÐ¾Ð´Ð¾Ð² ÑÐµÑÐµÐ· ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÐµ Ð¾Ð±Ð»Ð°ÑÑÐ¸, Ð° ÑÐ°ÐºÐ¶Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ñ Ð½Ð° Ð½ÐµÐ¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð°. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð²ÑÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° ÑÐµÐºÐ¾Ð¼ÐµÐ½Ð´Ð°ÑÐ¸Ñ Ð´Ð»Ñ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ñ Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÐ¸ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÑÐµÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ Ð¿Ð¾Ð´Ð°ÑÐ¸ ÑÐµÐ°Ð³ÐµÐ½ÑÐ¾Ð². Ð¢Ð°ÐºÐ¸Ð¼ Ð¾Ð±ÑÐ°Ð·Ð¾Ð¼, Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¾, ÑÑÐ¾ ÑÐ´Ð¾Ð²Ð»ÐµÑÐ²Ð¾ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾Ð¹ Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÐ¸ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð° Ð² Ð³Ð¾ÑÐ¸Ð·Ð¾Ð½ÑÐ°Ð»ÑÐ½Ð¾Ð¼ ÑÐµÐ°ÐºÑÐ¾ÑÐµ Ð¼Ð¾Ð¶Ð½Ð¾ Ð´Ð¾Ð±Ð¸ÑÑÑÑ Ð¿ÑÑÑÐ¼ ÑÐµÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ Ð¿Ð¾Ð´Ð°ÑÐ¸ ÑÐµÐ°Ð³ÐµÐ½ÑÐ¾Ð².
description: The given work is devoted to numerical simulation of heat and mass transfer in a horizontal CVD reactor Â«Dragon 200Â» and investigation of the influence of sectional supply of reagents on heterogeneity of the growing crystal parameters. The research sets the following goals: 1. Numerical simulation of heat and mass transfer taking into account various coupled physical processes. 2. Verification of existing model of chemical reactions. 3. Investigation of impact of sectional supply of reagents on uniformity of the crystalâs growth rate and composition. 4. Development of recommendations for improving the heterogeneity of crystalâs parameters. The work was carried out with the Institute of Physics and Technology where the Â«Dragon 200Â» reactor is being developed. Verification calculations of the chemical reaction model were carried out. A solution with uniform supply of reagents was obtained and analysed. Then several variants with sectional supply of reagents were obtained. The effect of decreasing and increasing flow rates through different areas as well as pressure effect on inhomogeneity of crystal parameters were analyzed. The recommendation for obtaining better homogeneity using the sectional reagent supply method was made. Thus, it was found that a satisfactory homogeneity of the crystal in the horizontal reactor can be achieved by sectional supply of the reagents.