title: ÐÐ»Ð¸ÑÐ½Ð¸Ðµ Ð´Ð¾Ð¿Ð¾Ð»Ð½Ð¸ÑÐµÐ»ÑÐ½Ð¾Ð³Ð¾ Ð¾ÑÐ¶Ð¸Ð³Ð° Ð½Ð° ÑÐ»ÐµÐºÑÑÐ¾ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° CVD Ð³ÑÐ°ÑÐµÐ½Ð°
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Influence of additional annealing on electro-physical properties of CVD graphene
Creators: name: Ð¢Ð¾Ð½ÐºÐ¾Ð², ÐÐ¼Ð¸ÑÑÐ¸Ð¹
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: Ð³ÑÐ°ÑÐµÐ½
ÑÑÐ°Ð½ÑÐ¿Ð¾ÑÑÐ½ÑÐµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð°
ÑÐ´ÐµÐ»ÑÐ½Ð¾Ðµ ÑÐ¾Ð¿ÑÐ¾ÑÐ¸Ð²Ð»ÐµÐ½Ð¸Ðµ
Ð´Ð¾Ð¿Ð¾Ð»Ð½Ð¸ÑÐµÐ»ÑÐ½ÑÐ¹ Ð¾ÑÐ¶Ð¸Ð³
Ð¿ÑÐ¸Ð¼ÐµÑÐ¸ Ð¸ Ð´ÐµÑÐµÐºÑÑ
graphene
transport properties
resistivity
additional annealing
impurities and defects

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description: The object of the study is the sintered on the silicon substrate CVD-graphene samples as well as the samples obtained by their additional annealing.
The aim of the experimental part of the work is a comparative study and analysis of the temperature dependences of the resistivity for as-sintered graphene samples and samples annealed in a Ar/H mixture under ambient pressure and at different temperatures (from 250 Ð¾Ð¡ up to 750 Ð¾Ð¡).
In the first part of the work, the review of the literature data is presented. In this review, we discuss the main physical properties of graphene, methods of graphen sintering, theoretical and experimental results of investigations of grapheneâs electro-physical properties and ways of their modifications.
In the second part of the work, we present the results of the experimental investigations of modifications of the temperature dependences of the graphene resistivity under additional annealing as well as the results of a numerical analysis of the experimental data. To perform the numerical analysis, we an earlier proposed model which takes into account different scattering mechanisms for the charge carriers in graphene. In this work, we consider two types of the temperature dependences of the resistivity (metallic- and semiconductor-like) related to a prevalence of different scattering mechanisms in specific samples, namely, the acoustic phonon scattering and the Coulomb scattering. Using the numerical calculations, we obtain the values of concentration of the impurities in a substrate and on graphene surface and concentration of the vacancies in the graphene crystal structure. An influence of additional annealing at different temperatures on these parameters is analyzed.