cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Enhanced Blue Response of Poly-Si/SiOx Passivating Contacts for High-Efficiency Silicon Solar Cells
Creators: name: Chen, K.
name: LaSalvia, V.
name: Nemeth, W.
name: Theingi, S.
name: Bothwell, A.
name: Hartenstein, M.
name: Guthrey, H.
name: Kale, A.S.
name: Page, M.
name: Stradins, P.
name: Agarwal, S.
name: Young, D.L.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 176-178
description: Poly-Si/SiOx passivating contacts have shown great potential for industry-relevant next-generation solar cells. However, one of the limiting factors to high efficiency is large parasitic absorption due to the thick poly-Si that is necessary to protect the surface from metalization damage. Our previous work has demonstrated an improved Jsc from dry reactive ion etching in an SF6 environment, using the front metal grids as a self-aligned mask. Here, we show an effective method to measure the front poly-Si thickness on an alkaline textured surface using X-ray diffraction. The calculated thicknesses are compared with cross-section SEM analysis and Quokka simulation, showing good agreements with <10% error. We show that by thinning the front poly-Si from 200 nm to 60 nm, Jsc increases by 2.4 mA/cm2, leading to an absolute efficiency gain of 1.73%. Additionally, we discuss the possible reason for the premature loss of passivation before the removal of all poly-Si. Finally, we explore wet chemistry etching using tetramethylammonium hydroxide, which has high selectivity to oxide. We demonstrate the ability to completely remove the front poly-Si in between the metal grids. A re-passivation step is performed with a dielectric stack of SiNx and Al2O3. After a short FGA annealing step, we show an improvement in Jsc of 8.6 mA/cm2, yielding a final device efficiency of 20.5%.
What a Tangled Web We Weave: Hermus as the Northern Extension of the Phoenix Stream
Creators: name: Grillmair, Carl J.
name: Carlberg, Raymond G.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: FOS: Physical sciences

description: We investigate whether the recently discovered Phoenix stream may be part of a much longer structure that includes the previously discovered Hermus stream. Using a simple model of the Galaxy with a disk, bulge, and a spherical dark matter halo, we show that a nearly circular orbit, highly inclined with respect to the disk, can be found that fits the positions, orientations, and distances of both streams. While the two streams are somewhat misaligned in the sense that they do not occupy the same plane, nodal precession due to the Milky Way disk potential naturally brings the orbit into line with each stream in the course of half an orbit. We consequently consider a common origin for the two streams as plausible. Based on our best fitting orbit, we make predictions for the positions, distances, radial velocities, and proper motions along each stream. If our hypothesis is borne out by measurements, then at ~183 degrees (~235 degrees with respect to the Galactic center) and ~76 kpc in length, Phoenix-Hermus would become the longest cold stream yet found. This would make it a particularly valuable new probe of the shape and mass of the Galactic halo out to ~20 kpc.
description: 8 pages, 4 figures, accepted for publication in ApJ Letters
Reconstructing Links in Directed Networks from Noisy Dynamics
Creators: name: Ching, Emily S. C.
name: Tam, H. C.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Adaptation and Self-Organizing Systems (nlin.AO)
subject: Biological Physics (physics.bio-ph)
subject: FOS: Physical sciences

description: In this Letter, we address the longstanding challenge of how to reconstruct links in directed networks from measurements, and present a general method that makes use of a noise-induced relation between network structure and both the time-lagged covariance of measurements taken at two different times and the covariance of measurements taken at the same time. For coupling functions that have additional properties, we can further reconstruct the weights of the links.
Sklar's Theorem in an Imprecise Setting
Creators: name: Montes, Ignacio
name: Miranda, Enrique
name: Pelessoni, Renato
name: Vicig, Paolo
Publisher: name: arXiv
Year: 2016
Subjects: subject: Probability (math.PR)
subject: Statistics Theory (math.ST)
subject: FOS: Mathematics
subject: 60E05, 60E15, 60A05

description: Sklar's theorem is an important tool that connects bidimensional distribution functions with their marginals by means of a copula. When there is imprecision about the marginals, we can model the available information by means of p-boxes, that are pairs of ordered distribution functions. Similarly, we can consider a set of copulas instead of a single one. We study the extension of Sklar's theorem under these conditions, and link the obtained results to stochastic ordering with imprecision.
description: A definitive version has been published in a special issue on uncertainty and imprecision modelling in decision making (EUROFUSE 2013) of Fuzzy Sets and Systems
Magneto optical rotation in a GaAs Quantum Well Waveguide
Creators: name: Mortezapour, Ali
name: Abad, Mohsen Ghaderi Goran
name: Mahmoudi, Mohammad
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Optics (physics.optics)
subject: FOS: Physical sciences

description: The interaction of two orthogonally polarized beams and a four-level GaAs quantum well (QW) waveguide is investigated. It is shown that, by applying a static magnetic field normal to the propagation direction of the driving beams, the birefringence can be induced in the QW waveguide. Moreover, it is demonstrated that the dephasing rate between two ground states of the QW waveguide makes it a dichromatic medium and can also diminish the induced birefringence. Our results show how a large and complete magneto-optical rotation in the QW waveguide can be obtained via adjusting the intensity of the magnetic field and also the length of the QW waveguide.
description: Journal of the Optical Society of America B Vol. 32, No. 7 / July 2015
On approximation of joint fixed points
Creators: name: Serkov, Dmitrii
Publisher: name: arXiv
Year: 2016
Subjects: subject: Logic (math.LO)
subject: FOS: Mathematics
subject: 47H10, 54C10, 54E45, 91B50

description: For a given partially ordered set (poset) and a given family of mappings of the poset into itself, we study the problem of the description of joint fixed points of this family. Well-known Tarski's theorem gives the structure of the set of joint fixed points of isotone automorphisms on a complete lattice. This theorem has several generalizations (see., e.g., Markowsky, Ronse) that weaken demands on the order structure and upgrade in an appropriate manner the assertion on the structure of the set of joint fixed points. However, there is a lack of the statements similar to Kantorovich or Kleene theorems, describing the set of joint fixed points in terms of convergent sequences of the operator degrees. The paper provids conditions on the poset and on the family; these conditions ensure that the iterative sequences of elements of this family approximate the set of joint fixed points. The result obtained develops in a constructive direction the mentioned theorems on joint fixed points.
description: 6 pages
The effect of unresolved binaries on globular cluster proper-motion dispersion profiles
Creators: name: Bianchini, P.
name: Norris, M. A.
name: van de Ven, G.
name: Schinnerer, E.
name: Bellini, A.
name: van der Marel, R. P.
name: Watkins, L. L.
name: Anderson, J.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: FOS: Physical sciences

description: High-precision kinematic studies of globular clusters require an accurate knowledge of all possible sources of contamination. Amongst other sources, binary stars can introduce systematic biases in the kinematics. Using a set of Monte Carlo cluster simulations with different concentrations and binary fractions, we investigate the effect of unresolved binaries on proper-motion dispersion profiles, treating the simulations like HST proper-motion samples. Since globular clusters evolve towards a state of partial energy equipartition, more massive stars lose energy and decrease their velocity dispersion. As a consequence, on average, binaries have a lower velocity dispersion, since they are more massive kinematic tracers. We show that, in the case of clusters with high binary fraction (initial binary fraction of 50%) and high concentration (i.e., closer to energy equipartition), unresolved binaries introduce a color-dependent bias in the velocity dispersion of main-sequence stars of the order of 0.1-0.3 km s$^{-1}$ (corresponding to $1-6$% of the velocity dispersion), with the reddest stars having a lower velocity dispersion, due to the higher fraction of contaminating binaries. This bias depends on the ability to distinguish binaries from single stars, on the details of the color-magnitude diagram and the photometric errors. We apply our analysis to the HSTPROMO data set of NGC 7078 (M15) and show that no effect ascribable to binaries is observed, consistent with the low binary fraction of the cluster. Our work indicates that binaries do not significantly bias proper-motion velocity-dispersion profiles, but should be taken into account in the error budget of kinematic analyses.
description: 7 pages, 3 figure, 2 tables. Accepted for publication in ApJ Letters
Towards 24% Efficiency for Industrial n-Type Bifacial Passivating-Contact Solar Cells with Homogeneous Emitter
Creators: name: Bao, J.
name: Chen, C.
name: Ma, L.
name: Huang, C.
name: Zhang, X.
name: Wang, Z.
name: Chen, C.
name: Zhan, S.
name: Liu, R.
name: Qiao, Z.
name: Du, Z.
name: Liu, Z.
name: Chen, J.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 160-163
description: Passivating-contact solar cells are attracting more and more attention in the solar industry due to its high efficiency potential and high compatibility with existing PERC and PERT process flow. Jolywood has been one of the first few manufacturers producing solar cells and modules featuring passivating-contact technology with more than 2 GW capacity. This work reports the latest results at Jolywood of full-area (251.99 cm2) n-type bifacial passivating contact solar cells using the cost-effective process with industrially-feasible homogeneous emitter, phosphorus-ion-implantation and LPCVD with in-situ oxidation. We systematically investigated the impact of P-tail profile and boron emitter profile on the recombination current in the non-metallized and metallized areas and the corresponding contact resistivity. According to our knowledge, J0,metal of 666 fA/cm2 is lowest reported for the homogeneous boron emitter with J0,pass of 25 fA/cm2. This result is important for industrial passivating-contact solar cells to be cost-effective. With the optimized processes, average efficiency up to 23.85% with an excellent VOC of 703.5 mV are obtained in production line. The power loss analysis performed via Quokka3 indicating that the performance is mainly limited by the optical loss and emitter recombination. Inspired by the results, the best champion efficiency in R&D of 24.21% is achieved with further processes optimization, featuring VOC of 711.6 mV.
Konvergenz der Fragen und Antworten
Creators: name: Kasper, Walter
name: Küng, Hans
name: Remmers, Johannes
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 6 Nr. 4 (1970): Concilium: Internationale Zeitschrift für Theologie, Band 6, Heft 4
Industrial TOPCon Solar Cells Realized by a PECVD Tube Process
Creators: name: Feldmann, F.
name: Steinhauser, B.
name: Pernau, T.
name: Nagel, H.
name: Fellmeth, T.
name: Mack, S.
name: Ourinson, D.
name: Lohmüller, E.
name: Polzin, J.
name: Moldovan, A.
name: Bivour, M.
name: Clement, F.
name: Rentsch, J.
name: Hermle, M.
name: Glunz, S.W.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 164-169
description: These days low-pressure chemical vapor deposition (LPCVD) is commonly used by the photovoltaic industry to deposit Si layers for tunnel oxide passivated contact (TOPCon). This work summarizes the development of an alternative TOPCon deposition process using a tube plasma-enhanced chemical vapor deposition (PECVD) tool. In the first part, the main results of the German federal project “Upgrade Si-PV” are summarized. The goal of this project was the transfer of the TOPCon process to an industrial-proven tube PECVD system. In the second part, recent progress on the implementation of this process into a TOPCon cell is presented. It is demonstrated that the PECVD system is capable of producing screen-printing compatible TOPCon layers yielding recombination currents of ≈ 3 fA/cm² and ≈ 200 fA/cm² in the passivated and metallized region, respectively. The best TOPCon cell which was realized with the PECVD process yielded the following current-voltage parameters: Voc = 700 mV, FF = 79.6%, Jsc = 41.2 mA/cm², and = 22.95%.
LeTID- and (Extended) BO-Related Degradation and Regeneration in B- and Ga-Doped Monocrystalline Silicon During Dark and Illuminated Anneals
Creators: name: Kwapil, W.
name: Dalke, J.
name: Niewelt, T.
name: Schubert, M.C.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 152-155
description: We study the degradation effects of boron-oxygen related light-induced degradation (LID) and light- and elevated temperature-induced degradation (LeTID) on both B- and Ga-doped Cz-Si wafers from the same industrial producer. The wafers of the two doping types were subjected to the same sample processing and degradation conditions. The studied conditions include dark anneal (DA) at 175°C and illuminated anneals at 75°C and either 1 or 0.1 sun eq. illumination intensity, which allow a good direct comparison of the influence of the dopant elements on the degradation effects. We find an atypical injection dependence of LeTID in the Ga-doped samples compared to the “standard” behavior in B-doped silicon. The Ga-doped samples degrade strongly only when the carrier injection is low. Degradation of Ga-doped samples during DA is only observed on long timescales, resulting in an injection-dependent lifetime dissimilar to LeTID-degraded Ga-doped samples and B-doped samples after both DA and LeTID. The results indicate that the dopants have a strong influence on the degradation behavior.
Electronic properties of the FeSe/STO interface from first-principle calculations
Creators: name: Linscheid, Andreas
Publisher: name: arXiv
Year: 2016
Subjects: subject: Superconductivity (cond-mat.supr-con)
subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: Compared to experiment, the calculated bulk lattice constant of FeSe is too small in LDA, PBEsol and PBE type exchange-correlation (xc) functionals even though the mismatch decreases from LDA to PBE. In bulk SrTiO3 (STO) on the other hand LDA over-binds, PBE under-binds and PBEsol agrees best with experiment. With the errors in opposite directions, the strain in the FeSe monolayer on STO depends on the xc functional and, especially in the non-magnetic state, is strongly overestimated. In this work we investigate the influence of the xc functional and magnetism in density functional calculations on electronic bonding properties and charge transfer in the FeSe monolayer on a STO substrate. Furthermore, we consider the effect of oxygen-vacancies within the virtual crystal approximation. In agreement with earlier work, we find that the band structure of the checkerboard antiferromagnetic configuration agrees best with experiment where, in addition, the relative strain on FeSe is best described. For a small vacancy concentration, in agreement with recent experiment, the FeSe monolayer Ti layer distance increases while for higher concentrations it decreases.
description: Invited contribution Supercond. Sci. Technol.: Focus on Superconductivity in the 2D limit
Novel Magnetic Quantization of sp$^{3}$ Bonding in Monolayer Tinene
Creators: name: Chen, Szu-Chao
name: Wu, Chung-Lin
name: Wu, Jhao-Ying
name: Lin, Ming-Fa
Publisher: name: arXiv
Year: 2015
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: A generalized tight-binding model, which is based on the subenvelope functions of the different sublattices, is developed to explore the novel magnetic quantization in monolayer gray tin. The effects due to the $sp^{3}$ bonding, the spin-orbital coupling, the magnetic field and the electric field are simultaneously taken into consideration. The unique magneto-electronic properties lie in two groups of low-lying Landau levels, with different orbital components, localization centers, state degeneracy, spin configurations, and magnetic- and electric-field dependences. The first and second groups mainly come from the $5p_{z}$ and ($5p_{x}$,$5p_{y}$) orbitals, respectively. Their Landau-level splittings are, respectively, induced by the electric field and spin-orbital interactions. The intragroup anti-crossings are only revealed in the former. The unique tinene Landau levels are absent in graphene, silicene and germanene.
description: 6 figures
Tensor products and joint spectra for solvable Lie algebras of operators
Creators: name: Boasso, Enrico
Publisher: name: arXiv
Year: 2016
Subjects: subject: Functional Analysis (math.FA)
subject: FOS: Mathematics
subject: Primary 47A13, 17B30, Secondary 46M05, 47A80

description: Given two complex Hilbert spaces, $H_1$ and $H_2$, and two complex solvable finite dimensional Lie algebras of operators, $L_1$ and $L_2$, such that $L_i$ acts on $H_i$ (i= 1,2), the joint spectrum of the Lie algebra $L_1\times L_2$, which acts on $H_1\overline\otimes H_2$, is expressed by the cartesian product of $Sp(L_1,H_1)$ and $Sp(L_2,H_2)$.
description: 7 pages, original research article
Gauging and Decoupling in 3d $\mathcal{N}=2$ dualities
Creators: name: Lee, Jeongseog
name: Yamazaki, Masahito
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: One interesting feature of 3d $\mathcal{N}=2$ theories is that gauge-invariant operators can decouple by strong-coupling effects, leading to emergent flavor symmetries in the IR. The details of such decoupling, however, depends very delicately on the gauge group and matter content of the theory. We here systematically study the IR behavior of 3d $\mathcal{N}=2$ SQCD with $N_f$ flavors, for gauge groups $\mathrm{SU}(N_c), \mathrm{USp}(2N_c)$ and $\mathrm{SO}(N_c)$. We apply a combination of analytical and numerical methods, both to small values of $N_c, N_f$ and also to the Veneziano limit, where $N_c$ and $N_f$ are taken to be large with their ratio $N_f/N_c$ fixed. We highlight the role of the monopole operators and the interplay with Aharony-type dualities. We also discuss the effect of gauging continuous as well as discrete flavor symmetries, and the implications of our analysis to the classification of $1/4$--BPS co-dimension 2 defects of 6d $(2,0)$ theories.
Chiral Magnetism in an Itinerant Helical Magnet, MnSi - An Extended 29Si NMR Study -
Creators: name: Yasuoka, Hiroshi
name: Motoya, Kiyoichiro
name: Majumder, Mayukh
name: Witt, Sebastian
name: Krellner, Cornelius
name: Baenitz, Michael
Publisher: name: arXiv
Year: 2016
Subjects: subject: Strongly Correlated Electrons (cond-mat.str-el)
subject: FOS: Physical sciences

description: The microscopic magnetism in the helical, the conical and the ferro-magnetically polarized phases in an itinerant helical magnet, MnSi, has been studied by an extended 29Si NMR at zero field and under external magnetic fields. The temperature dependence of staggered moment, M_Q(T), determined by the 29Si NMR frequency, nu(T), and nuclear relaxation rate, 1/T_1(T) is in general accord with the SCR theory for weak itinerant ferromagnetic metals and its extension. The external field dependence of resonance frequency, nu(H), follows a vector sum of the contributions from atomic hyperfine and macroscopic fields with a field induced moment characteristic to the itinerant magnets. A discontinuous jump of the resonance frequency at the critical field, H_c, between the conical and the polarized phases has also been found that suggests a first order like change of the electronic states at H_c.
Reducing LeTID with an Adjustment of the AlOx-SiNy:H Layer System
Creators: name: Schmid, A.
name: Fischer, C.
name: Skorka, D.
name: Zuschlag, A.
name: Hahn, G.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 156-159
description: Light and elevated temperature induced degradation (LeTID) negatively impacts the lifetime and electronic characteristics of silicon (Si) solar cells. Even though the exact underlying mechanism of LeTID and subsequent regeneration are still unknown, LeTID formation seems to depend on the hydrogen content in the Si bulk. In this study, we compare the LeTID and subsequent regeneration behaviour of p-type Cz-Si and mc-Si samples with different AlOx/SiNy:H passivation layer systems under illumination (1 sun) and elevated temperature (130°C). Provided that atomic layer deposited AlOx can serve as diffusion barrier for hydrogen diffusing in the Si bulk from the SiNy:H layer during firing, we are able to change the hydrogen content by adjusting the AlOx layer thickness between 0 and 25 nm. Thus, we are able to show a reduction of LeTID by an adapted processing sequence without any losses in material quality.
Letter from Kathleen Raine to Herbert Read, October 20, [1949?-1965?], [01]
Creators: name: Raine, Kathleen, 1908-2003
Publisher: name: University of Victoria Libraries
Year: 2023
Subjects: subject: Philosophers, Modern
valueUri: http://id.worldcat.org/fast/1060765
subject: Critics
valueUri: http://id.worldcat.org/fast/883769
subject: Read, Herbert, 1893-1968
valueUri: http://id.worldcat.org/fast/1754386
subject: Authors
valueUri: http://id.worldcat.org/fast/821688
subject: Scholars
valueUri: http://id.worldcat.org/fast/1106878
subject: Art historians
valueUri: http://id.worldcat.org/fast/815554
subject: Anarchists
valueUri: http://id.worldcat.org/fast/808401
subject: Poets, English
valueUri: http://id.worldcat.org/fast/1067870
subject: Raine, Kathleen, 1908-2003
valueUri: http://id.worldcat.org/fast/52672
subject: Poets
valueUri: http://id.worldcat.org/fast/1067778
subject: Authors, English
valueUri: http://id.worldcat.org/fast/821945
subject: Modernism (Literature)
valueUri: http://id.worldcat.org/fast/1024455
subject: Literature, Modern
valueUri: http://id.worldcat.org/fast/1000172
subject: Authors, English--Correspondence
valueUri: http://id.worldcat.org/fast/821953
subject: Philosophers
valueUri: http://id.worldcat.org/fast/1060746

description: Part of a collection of correspondence from Kathleen Raine to Herbert Read. Raine was a British scholar and poet who was awarded the Queen’s Gold Medal for Poetry in 1992. The correspondence here follows Raine’s work on a book about William Blake’s mythology. Other topics include discussion of philosophical and metaphysical subjects, and references to acquaintances in literary and arts circles. In this letter, Raine writes about a potential opportunity for Read's play to be performed. She also discusses a planned visit with another acquaintance.
Disappearance of Hydrogen-Boron-Pairs in Silicon during Illumination and Its Relevance to Lifetime Degradation and Regeneration Effects in Solar Cells
Creators: name: Walter, D.C.
name: Bredemeier, D.
name: Falster, R.
name: Voronkov, V.V.
name: Schmidt, J.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 140-144
description: In this contribution, we focus on a well-known complex in hydrogenated silicon, the hydrogen-boron (HB) pair, which allows us to directly determine the absolute hydrogen concentration in the silicon bulk via resistivity measurements. We demonstrate here that HB-pairs, which were formed during dark annealing, disappear under illumination at elevated temperatures. Upon a subsequent dark anneal, HB-pairs form again. Our experimental results suggest a reversible process for the formation of HB-pairs from H2 dimers upon dark annealing and the reformation of H2 dimers upon illuminated annealing. In addition, we show that the time of HB-pairs disappearance depends critically on the temperature and the applied illumination intensity, suggesting a thermally activated electron-enhanced backward formation of hydrogen dimers. Importantly, we observe on our samples made of boron-doped float-zone silicon (FZ-Si), that the loss of HB-pairs is accompanied by a reduction in carrier lifetime, which needs to be accounted for when describing the HB-loss curves, since the excess carrier concentration varies accordingly over time. In addition, our results might point to a connection between light-induced degradation and HB dissociation, which, has however to be examined in more detail in future studies.
Defect Reactions Responsible for Boron-Oxygen Degradation in Crystalline Silicon Photovoltaics
Creators: name: De Guzman, J.A.T.
name: Markevich, V.P.
name: Peaker, A.R.
name: Vaqueiro-Contreras, M.
name: Coutinho, J.
name: Crowe, I.F.
name: Hawkins, I.
name: Hammersley, S.
name: Halsall, M.P.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 145-151
description: Light-induced degradation of silicon solar cells containing boron and oxygen impurity atoms (BO-LID) has been linked recently with structural transformations of the defect consisting of a substitutional boron atom and two interstitial oxygen atoms - BsO2. An atomistic model and configuration-coordinate diagram of the BsO2 defect have been proposed (M. Vaqueiro-Contreras et al, J. Appl. Phys. 125 (2019) 185704). In the present work, we have studied the transformations of the BsO2 defect between configurations with different recombination activity in n+-p-p+ diodes fabricated from Si:B+O materials with different boron concentrations using deep-level transient spectroscopy (DLTS) and Laplace DLTS. The transformations have been initiated either by minority carrier injection (MCI) by forward biasing the diodes (BO degradation) or by increasing the temperature of the diodes above 313 K in dark after the MCI treatments (BO annealing). The values of energy barriers for the forward and back processes have been determined and found to be consistent with those known from literature for BO-LID. Further, we have compared the defect reactions degrading the boron-oxygen system with similar reactions in material doped with gallium, indium or aluminium and discuss possible explanations of the reduced degradation in samples doped with group-III elements other than boron.
Drop Test Method for Impact Loading on Silicon Wafer Edge: Damage and Breakage
Creators: name: Carton, L.
name: Riva, R.
name: Abidate, Y.
name: Coustier, F.
name: Nelias, D.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 126-132
description: While reducing as-cut thickness is a key objective to lower the manufacturing costs, maintaining low breakage rates when processing thinner wafers remains an issue. In this study, we focus on one of the most critical types of stresses experienced by a photovoltaic wafer during handling: impact on edge. We develop and optimize a drop tower setup and experimental protocol, which allows generating an impact on the edge of a monocrystalline diamond-wire sawn as-cut wafer with a known kinetic energy. Impact tests are performed on several hundreds of samples with thickness ranging from 180 to 100 µm. Results show that with decreasing thickness, edge impact is more likely to cause catastrophic failure of the wafer. Four-line bending tests performed on impacted wafers demonstrate that the sensitivity to edge impact is anisotropic. The findings can help provide recommendations on handling technologies applied to DWS silicon wafers.
The Global Solar Dynamo
Creators: name: Cameron, R. H.
name: Dikpati, M.
name: Brandenburg, A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Solar and Stellar Astrophysics (astro-ph.SR)
subject: FOS: Physical sciences

description: A brief summary of the various observations and constraints that underlie solar dynamo research are presented. The arguments that indicate that the solar dynamo is an alpha-omega dynamo of the Babcock-Leighton type are then shortly reviewed. The main open questions that remain are concerned with the subsurface dynamics, including why sunspots emerge at preferred latitudes as seen in the familiar butterfly wings, why the cycle is about 11 years long, and why the sunspot groups emerge tilted with respect to the equator (Joy's law). Next, we turn to magnetic helicity, whose conservation property has been identified with the decline of large-scale magnetic fields found in direct numerical simulations at large magnetic Reynolds numbers. However, magnetic helicity fluxes through the solar surface can alleviate this problem and connect theory with observations, as will be discussed.
description: Accepted in Space Science Reviews NORDITA-2015-97
Morphology, Microstructure, and Doping Behaviour: a Comparison Between Different Deposition Methods For Poly-SI/SIOx Passivating Contacts
Creators: name: Truong, T.N.
name: Yan, D.
name: Nguyen, C.-P.-T.
name: Kho, T.
name: Guthrey, H.
name: Seidel, J.
name: Al-Jassim, M.M.
name: Cuevas, A.
name: Macdonald, D.
name: Nguyen, H.T.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 133-139
description: Crystallographic structures, optoelectronic properties, and nanoscale surface morphologies of ex-situ phosphorus-doped polycrystalline silicon (poly-Si)/SiOx passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour deposition (PECVD), and low-pressure chemical vapour deposition (LPCVD)), are investigated and compared. Across all these deposition technologies, we noted the same trend: higher diffusion temperatures yield films that are more crystalline, but that have rougher surface morphologies due to bigger surface crystal grains. Also, the recrystallization process of the as-deposited Si films starts from the SiOx interface, rather than from the film surface and bulk. However, there are some distinct differences among these technologies. Firstly, the LPCVD method yields the lowest deposition rate, roughest surfaces and smallest degree of crystallinity on finished poly-Si films. In contrast, the PECVD method has the highest deposition rate and smoothest surfaces for both as-deposited Si and annealed poly-Si films. Secondly, as-deposited sputtered and PECVD Si films contain only an amorphous phase whereas as-deposited LPCVD films already has some crystalline phase. Thirdly, the LPCVD phosphorus in-diffusion into the substrate depends strongly on the initial film thickness, whereas for the other two methods it is weakly dependent on thickness. Finally, the passivation quality of every poly-Si film type has different responses to the film thickness and diffusion temperature, suggesting that the ex-situ doping optimization should be performed independently
Diffusive Propagation of Energy in a Non-Acoustic Chain
Creators: name: Komorowski, Tomasz
name: Olla, Stefano
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mathematical Physics (math-ph)
subject: Statistical Mechanics (cond-mat.stat-mech)
subject: Probability (math.PR)
subject: FOS: Physical sciences
subject: FOS: Mathematics

description: We consider a non acoustic chain of harmonic oscillators with the dynamics perturbed by a random local exchange of momentum, such that energy and momentum are conserved. The macroscopic limits of the energy density, momentum and the curvature (or bending) of the chain satisfy a system of evolution equations}. We prove that, in a diffusive space-time scaling, the curvature and momentum evolve following a linear system that corresponds to a damped Euler-Bernoulli beam equation. The macroscopic energy density evolves following a non linear diffusive equation. In particular the energy transfer is diffusive in this dynamics. This provides a first rigorous example of a normal diffusion of energy in a one dimensional dynamics that conserves the momentum.
Die Übereinstimmung in den Hoffnungen und Klagen
Creators: name: Küng, Hans
name: Kasper, Walter
name: Remmers, Johannes
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 6 Nr. 4 (1970): Concilium: Internationale Zeitschrift für Theologie, Band 6, Heft 4
The Crystal Growth Explorer: Real-Time Navigable 3D Visualization of Silicon Grains and Defect Related Data in Cast-Mono and Multicrystalline Bricks
Creators: name: Schönauer, J.
name: Demant, M.
name: Trötschler, T.
name: Kovvali, A.S.
name: Schremmer, H.
name: Krenckel, P.
name: Riepe, S.
name: Rein, S.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 113-120
description: Development of novel materials for silicon solar cell production like SMART mono material with functional grain boundaries depends on the human insight and understanding of the structural and dynamic properties of the underlying crystallization process. In this work, we present an analysis and visualization process that allows for comfortable, flexible human exploration and interpretation of various crystallization-related data types ranging from per-wafer photographic images and defect measurements to segmented and 3D-reconstructed grain and defect data, by putting and combining them in a concrete, meaningful, vivid visualization context close to the spatial structure of the actual grown crystal. We address two urgent challenges for smart mono development by combining appropriate data analysis and inspection methods: (1st) analyzing crystal growth characteristics for non-destructive quality inspection and (2nd) investigating defect scenarios for identifying the best crystallization recipes.
Cast-Mono Silicon Wafers for a Sustainable PV Market Growth
Creators: name: Riepe, S.
name: Nold, S.
name: Brailovsky, P.
name: Krenckel, P.
name: Friedrich, L.
name: Janz, S.
name: Preu, R.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 121-125
description: The economic and ecologic sustainability of using cast-mono silicon wafers in comparison to Czochralski silicon wafers for the production of PERC solar cells and their subsequent application in a photovoltaic system has been studied within a cost and carbon footprint analysis for the whole value chain. The cast-mono growth technology has been modelled based on a G8 industrial furnace system compared to a Cz-growth systems with 36” crucible size and recharging process. The carbon footprint and cost per wafer were evaluated for M6 and M12 wafer sizes. A PV system with cast-mono wafers shows a 9 % reduced carbon footprint for a use phase of 25 years with the assumed properties. On wafer level the cost profiles for both technologies show a cross over point at around 5-7 $ct per kilowatt hour of electricity with lower cost of cast-mono wafers in case of higher electricity prices. An increase of brick yield from actual approx. 53 % to over 60 % would result in a wafer cost decrease of up to 0,4 $ct per Watt peak thus enabling a competitiveness for the future wafer market.
Green Week, how to create your GreenSCENT story with stop motion
Creators: name: Fraser, Susannah
Publisher: name: Zenodo
Year: 2023
Subjects: Education for sustainable development, eco-school, environmental education, sustainability, sustainability competences, GreenComp

description: This presentation aims to investigate the use of stop-motion animation as a pedagogical tool for promoting environmental awareness among young people. Through a review of relevant literature and the presentation of case studies, the presentation demonstrates the potential for stop-motion to engage and educate children and youths on issues related to sustainability and conservation.
The MOSDEF Survey: The strong agreement between H-alpha and UV-to-FIR star formation rates for z~2 star-forming galaxies
Creators: name: Shivaei, Irene
name: Kriek, Mariska
name: Reddy, Naveen A.
name: Shapley, Alice E.
name: Barro, Guillermo
name: Conroy, Charlie
name: Coil, Alison L.
name: Freeman, William R.
name: Mobasher, Bahram
name: Siana, Brian
name: Sanders, Ryan
name: Price, Sedona H.
name: Azadi, Mojegan
name: Pasha, Imad
name: Inami, Hanae
Publisher: name: arXiv
Year: 2016
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: FOS: Physical sciences

description: We present the first direct comparison between Balmer line and panchromatic SED-based SFRs for z~2 galaxies. For this comparison we used 17 star-forming galaxies selected from the MOSFIRE Deep Evolution Field (MOSDEF) survey, with $3σ$ detections for H$α$ and at least two IR bands (Spitzer/MIPS 24$μ$m and Herschel/PACS 100 and 160$μ$m, and in some cases Herschel/SPIRE 250, 350, and 500$μ$m). The galaxies have total IR (8-1000$μ$m) luminosities of $\sim10^{11.4}-10^{12.4}\,\textrm{L}_\odot$ and star-formation rates (SFRs) of $\sim30-250\,\textrm{M}_\odot\,\mathrm{yr^{-1}}$. We fit the UV-to-far-IR SEDs with flexible stellar population synthesis (FSPS) models - which include both stellar and dust emission - and compare the inferred SFRs with the SFR(H$α$,H$β$) values corrected for dust attenuation using Balmer decrements. The two SFRs agree with a scatter of 0.17 dex. Our results imply that the Balmer decrement accurately predicts the obscuration of the nebular lines and can be used to robustly calculate SFRs for star-forming galaxies at z~2 with SFRs up to $\sim200\,\textrm{M}_\odot\,\mathrm{yr^{-1}}$. We also use our data to assess SFR indicators based on modeling the UV-to-mid-IR SEDs or by adding SFR(UV) and SFR(IR), for which the latter is based on the mid-IR only or on the full IR SED. All these SFRs show a poorer agreement with SFR(H$α$,H$β$) and in some cases large systematic biases are observed. Finally, we show that the SFR and dust attenuation derived from the UV-to-near-IR SED alone are unbiased when assuming a delayed exponentially declining star-formation history.
description: 7 pages, 5 figures, to be published in ApJ Letters
Machen die neuen Probleme des säkularen Welt den Ökumenismus überflüssig?
Creators: name: Congar, Yves
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 6 Nr. 4 (1970): Concilium: Internationale Zeitschrift für Theologie, Band 6, Heft 4
A quantum walk on the half line with a particular initial state
Creators: name: Machida, Takuya
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Probability (math.PR)
subject: FOS: Physical sciences
subject: FOS: Mathematics

description: Quantum walks are considered to be quantum counterparts of random walks.They show us impressive probability distributions which are different from those of random walks.That fact has been precisely proved in terms of mathematics and some of the results were reported as limit theorems.When we analyze quantum walks, some conventional methods are used for the computations.Especially, the Fourier analysis has played a role to do that.It is, however, compatible with some types of quantum walks (e.g. quantum walks on the line with a spatially homogeneous dynamics) and can not well work on the derivation of limit theorems for all the quantum walks.In this paper we try to obtain a limit theorem for a quantum walk on the half line by the usage of the Fourier analysis.Substituting a quantum walk on the line for it, we will lead to a possibility that the Fourier analysis is useful to compute a limit distribution of the quantum walk on the half line.
description: 20 pages, 10 figures
Encapsulation of Photovoltaic Modules in Composite Material through HP-RTM Process
Creators: name: Aizpurua, J.
name: Cambarau, W.
name: Arrizabalaga, I.
name: Imbuluzqueta, G.
name: Hernandez, J.M.
name: Yurrita, N.
name: Ollo, O.
name: Cano, F.J.
name: Zubillaga, O.
Publisher: name: WIP
Year: 2020
Subjects: New Materials and Concepts for Photovoltaic Devices
New Materials and Concepts for Cells and Modules

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 103-105
description: Fiber reinforced composite materials have been reported as a valid solution for PV module manufacturing. This approach allows replacing the whole standard encapsulation system by the composite as the only structural and protective material, leading to lightweight monolithic devices. Vacuum resin infusion, prepreg based processes or resin transfer moulding (RTM) are potential manufacturing processes for this purpose, with their corresponding adaption to the presence of PV cells in the reinforcement stack. Mini-modules consisting of four crystalline silicon cells were manufactured with high pressure RTM (HP-RTM) process. A 0/90º fabric of glass fiber was used as reinforcement, whereas the resin system was composed by a clear bisphenol-A based epoxy resin and an amine curing agent. Process parameters and resin system composition were modified to avoid cell breakage during manufacturing. Incorporation of release compounds were found to be critical to smooth the demoulding step and minimize cell cracking. Modules were manufactured varying the content of the release agent. The PV performance was measured through current-voltage curves obtained by a lab solar simulator. The reliability of the modules was tested in accelerated aging tests comprising damp-heat, thermal cycling and ultraviolet radiation exposure, under conditions indicated in IEC 61215 standard. The results showed that the presence of the demoulding agent in the resin composition affected significantly to the durability of the modules. After 1000 hours of damp-heat exposure, the modules without this compound presented a power loss of 0.4%, whereas the ones containing 4% of releasing agent reached up to 3.2% power loss.
Engineered vertically-aligned polymeric nanostructures for intracellular delivery to mammalian cells
Creators: name: YOH, HAO ZHE
Publisher: name: Monash University
Year: 2023
Subjects: classificationCode: 401805
subject: Nanofabrication, growth and self assembly
classificationCode: 321405
subject: Pharmaceutical sciences
classificationCode: 310607
subject: Nanobiotechnology

description: Silicon nanoneedles emerged as powerful therapeutic tools to deliver wide range of biocargoes into cells. But their fabrication process is usually complex and costly. The thesis features a new class of engineered nanoneedles that is made of flexible polymeric materials. The nanoneedles can be integrated into cell culture polystyrene with a relatively simple and cost-effective fabrication pathway. This new platform can effectively deliver mRNA into different cell types, and help to reveal the nanoneedle-mediated delivery mechanism at the cellular level.
Titanium Disilicide as the Only Material for Electrode in Crystalline Silicon Solar Cells
Creators: name: Zugasti, E.
name: Bengoechea, J.
name: Buceta, A.
name: Turumbay, A.
name: Lagunas, A.R.
Publisher: name: WIP
Year: 2020
Subjects: New Materials and Concepts for Photovoltaic Devices
New Materials and Concepts for Cells and Modules

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 91-94
description: In this work, an alternative material, namely titanium disilicide (TiSi2), to form the crystalline silicon solar cells’ electrode, is assessed. This approach paves the way for a complete elimination of the use of silver for the metallization of the solar cells and hence offers a reduction in solar cell processing costs. In this study, details of the synthesis of the TiSi2 most conductive C54 phase obtained onto planar and textured Si wafers are presented. Furthermore, the electrical properties of C54 TiSi2 are fed into a power loss model which will allow studying the capability of this titanium silicide to be used as the front electrode of crystalline silicon solar cells. Finally, based on multi-busbars interconnection technologies, different electrode designs have been modeled.
Time-of-flight Fourier UCN spectrometer
Creators: name: Kulin, G. V.
name: Frank, A. I.
name: Goryunov, S. V.
name: Kustov, D. V.
name: Geltenbort, P.
name: Jentschel, M.
name: Lauss, B.
name: Schmidt-Wellenburg, Ph.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Instrumentation and Detectors (physics.ins-det)
subject: Nuclear Experiment (nucl-ex)
subject: FOS: Physical sciences

description: We describe a new time-of-flight Fourier spectrometer for investigation of UCN diffraction by a moving grating. The device operates in the regime of a discrete set of modulation frequencies. The results of the first experiments show that the spectrometer may be used for obtaining UCN energy spectra in the energy range of 60$÷$200 neV with a resolution of about 5 neV. The accuracy of determination of the line position was estimated to be several units of $10^{-10}$ eV
description: Submitted to NIMA
First Measurement of Lifetime of Photogenerated Current Carriers in New Material for Thin Films Solar Cells – Cu2-NiSnSe4 Solid Solutions
Creators: name: Gapanovich, M.V.
name: Rabenok, E.V.
name: Urkhanov, O.Yu.
name: Golovanov, B.I.
name: Novikov, G.F.
Publisher: name: WIP
Year: 2020
Subjects: New Materials and Concepts for Photovoltaic Devices
New Materials and Concepts for Cells and Modules

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 95-97
description: The samples Cu2-NiSnSe4 (CNTSe) (0≤≤0.3) were obtained by vacuum ampule synthesis from elemental Cu, Ni, Sn and Se. A study of their phase composition by Raman spectroscopy showed that samples with =0 and 0.1 are single-phase, while at =0,2 there was lines of impurity phases. For the first time, a photoresponse was observed by the contactless method of microwave photoconductivity, and the kinetics of the loss of current carriers in CNTSe powders was investigated. It was shown the lifetimes of photogenerated current carriers in these samples to be ~ 5 ns, which is comparable with the literature data for CZTS kesterites. The predominance of bimolecular recombination processes over capture processes was observed.