cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure
Creators: name: Dyer, G. C.
name: Shi, X.
name: Olson, B. V.
name: Hawkins, S. D.
name: Klem, J. F.
name: Shaner, E. A.
name: Pan, W.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.
Apodized pupil Lyot coronagraphs for arbitrary apertures. V. Hybrid Shaped Pupil designs for imaging Earth-like planets with future space observatories
Creators: name: N'Diaye, Mamadou
name: Soummer, Rémi
name: Pueyo, Laurent
name: Carlotti, Alexis
name: Stark, Christopher C.
name: Perrin, Marshall D.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Instrumentation and Methods for Astrophysics (astro-ph.IM)
subject: Earth and Planetary Astrophysics (astro-ph.EP)
subject: FOS: Physical sciences

description: We introduce a new class of solutions for Apodized Pupil Lyot Coronagraphs (APLC) with segmented aperture telescopes to remove broadband diffracted light from a star with a contrast level of $10^{10}$. These new coronagraphs provide a key advance to enabling direct imaging and spectroscopy of Earth twins with future large space missions. Building on shaped pupil (SP) apodization optimizations, our approach enables two-dimensional optimizations of the system to address any aperture features such as central obstruction, support structures or segment gaps. We illustrate the technique with a design that could reach $10^{10}$ contrast level at 34\,mas for a 12\,m segmented telescope over a 10\% bandpass centered at a wavelength $λ_0=$500\,nm. These designs can be optimized specifically for the presence of a resolved star, and in our example, for stellar angular size up to 1.1\,mas. This would allow probing the vicinity of Sun-like stars located beyond 4.4\,pc, therefore fully retiring this concern. If the fraction of stars with Earth-like planets is $η_{\Earth}=0.1$, with 18\% throughput, assuming a perfect, stable wavefront and considering photon noise only, 12.5 exo-Earth candidates could be detected around nearby stars with this design and a 12\,m space telescope during a five-year mission with two years dedicated to exo-Earth detection (one total year of exposure time and another year of overheads). Our new hybrid APLC/SP solutions represent the first numerical solution of a coronagraph based on existing mask technologies and compatible with segmented apertures, and that can provide contrast compatible with detecting and studying Earth-like planets around nearby stars. They represent an important step forward towards enabling these science goals with future large space missions.
description: 9 pages, 6 figures, ApJ accepted on 01/04/2016
The start of the Sagittarius spiral arm (Sagittarius origin) and the start of the Norma spiral arm (Norma origin) - model-computed and observed arm tangents at galactic longitudes -20 degrees < l < +23 degrees
Creators: name: Vallee, Jacques P
Publisher: name: arXiv
Year: 2016
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: FOS: Physical sciences

description: Here we fitted a 4-arm spiral structure to the more accurate data on global arm pitch angle and arm longitude tangents, to get the start of each spiral arm near the Galactic nucleus. We find that the tangent to the 'start of the Sagittarius' spiral arm (arm middle) is at l= -17 degrees +/- 0.5 degree, while the tangent to the 'start of the Norma' spiral arm (arm middle) is at l= +20 degrees +/- 0.5 degree. Earlier, we published a compilation of observations and analysis of the tangent to each spiral arm tracer, from longitudes +23 degrees to +340 degrees; here we cover the arm tracers in the remaining longitudes +340 degrees (=- 20 degrees) to +23 degrees. Our model arm tangents are confirmed through the recent observed masers data (at the arm's inner edge). Observed arm tracers in the inner Galaxy show an offset from the mid-arm; this was also found elsewhere in the Milky Way disk (Vallee 2014c). In addition, we collated the observed tangents to the so-called '3-kpc-arm' features; here they are found statistically to be near l= -18 degrees +/- 2 degrees and near l= +21 degrees +/- 2 degrees, after excluding misidentified spiral arms. We find that the model-computed arm tangents in the inner Galaxcy are spatially coincident with the mean longitude of the observed tangents to the '3-kpc-arm' features (same galactic longitudes, within the errors). These spatial similarities may be suggestive of a contiguous space.
description: 32 pages, 6 figures, 5 tables, 2 appendices; accepted for publication on 28 Dec. 2015 by Astronomical Journal (in press)
High Throughput Rapid Thermal Firing of Screen-Printed Contacts to Si Solar Cells on Low Quality Materials
Creators: name: Cooper, I.B.
name: Ebong, A.
name: Renshaw, J.S.
name: Rounsaville, B.
name: Reedy, R.
name: Al-Jassim, M.
name: Rohatgi, A.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Wafer-Based Silicon Solar Cells and Materials Technology
Mono- and Multicrystalline Silicon Materials and Cells

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 1765-1769
description: We have simulated the rapid thermal firing process (RTP) using a high throughput conveyer belt
furnace to study the physics of Si solar cell contact formation on low quality materials during mass production.
Optimal Al back surface field (BSF) is formed by increasing the sinter ramp rate as indicated by superior long
wavelength internal quantum efficiency (IQE) and secondary ion mass spectrometry (SIMS). We show that series
resistance (RSERIES) and fill factor (FF) can be directly controlled and optimized by shortening sinter dwell time.
Scanning electron micrographs (SEM) reveal a correlation between glass thickness at the Si/Ag finger interface and
Ag finger contact resistance. SIMS also shows that the extent of emitter penetration by Ag and glass frit is dependent
on sinter conditions. The observed trends in contact formation lead to control of RSERIES and FF, and greater
efficiencies are achieved using high throughput conveyer belt furnace without forming gas anneal.
The Ethics of Hacking: Should It Be Taught?
Creators: name: Radziwill, Nicole
name: Romano, Jessica
name: Shorter, Diane
name: Benton, Morgan
Publisher: name: arXiv
Year: 2015
Subjects: subject: Computers and Society (cs.CY)
subject: FOS: Computer and information sciences

description: Poor software quality can adversely affect application security by increasing the potential for a malicious breach of a system. Because computer security and cybersecurity are becoming such relevant topics for practicing software engineers, the need for educational opportunities in this area is steadily increasing. Universities and colleges have recognized this, and have started to offer programs in cybersecurity. At face value, these new programs may not appear controversial, but developing their curriculum requires answering a complex ethical question: Should programs teach hacking to their students? Even though there are different types of hackers, media reports of cybersecurity incidents tend to reserve the "hacker" label for cyber criminals, which overlooks the value in hacking (and, by extension, teaching students to hack). This article examines the full spectrum of hacking behavior, as well as arguments for and against including hacking in education programs, and recommends that hacking skills be considered an essential component of an education and practice in software quality assurance.
The nature and energetics of AGN-driven perturbations in the hot gas in the Perseus Cluster
Creators: name: Zhuravleva, I.
name: Churazov, E.
name: Arevalo, P.
name: Schekochihin, A. A.
name: Forman, W. R.
name: Allen, S. W.
name: Simionescu, A.
name: Sunyaev, R.
name: Vikhlinin, A.
name: Werner, N.
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Astrophysical Phenomena (astro-ph.HE)
subject: FOS: Physical sciences

description: Cores of relaxed galaxy clusters are often disturbed by AGN. Their Chandra observations revealed a wealth of structures induced by shocks, subsonic gas motions, bubbles of relativistic plasma, etc. In this paper, we determine the nature and energy content of gas fluctuations in the Perseus core by probing statistical properties of emissivity fluctuations imprinted in the soft- and hard-band X-ray images. About 80 per cent of the total variance of perturbations on ~ 8-70 kpc scales in the inner region have an isobaric nature, i.e., are consistent with slow displacements of the gas in pressure equilibrium with ambient medium. Observed variance translates to the ratio of non-thermal to thermal energy of ~13 per cent. In the region dominated by weak "ripples", about half of the total variance is also associated with isobaric perturbations on scales ~ a few tens of kpc. If these isobaric perturbations are induced by buoyantly rising bubbles, then these results suggest that most of the AGN-injected energy should first go into bubbles rather than into shocks. Using simulations of a shock propagating through the Perseus atmosphere, we found that models reproducing the observed features of a central shock have more than 50 per cent of the AGN-injected energy associated with the bubble enthalpy and only about 20 per cent is carried away with the shock. Such energy partition is consistent with the AGN-feedback model, mediated by bubbles of relativistic plasma, and supports the importance of turbulence in the balance between gas heating and radiative cooling.
description: 15 pages, 10 figures, submitted to MNRAS, comments are welcome
Photon pair shot noise in electron shot noise
Creators: name: Simoneau, Jean Olivier
name: Virally, Stéphane
name: Lupien, Christian
name: Reulet, Bertrand
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: There exists a fascinating dual representation of the electric ac current flowing through a normal conductor. On the one hand, it can be understood in terms of charge transport. On the other hand, it consists in an electomagnetic field guided by conducting structures embedded in an insulator. The former point of view, in its quantum version, is particularly adapted to describe the electron shot noise in a coherent conductor, like a tunnel junction at ultra-low temperature. However, when the junction is appropriately biased by a dc and an ac voltage, the noise it generates is best analyzed using the latter representation and the tools of quantum optics, as the radiation exhibits clear signs of non-classicality. Herein, we report the measurement of the statistics of photons emitted by such a tunnel junction. We observe a photon shot noise characteristic of photon pair emission, as its Fano factor for small signal is above unity. The theory of electron shot noise, dealing exclusively with the tunneling of charges through the junction, quantitatively fits the data from which photon shot noise is extracted. This experiment thus provides a clear link between the dual representations.
description: 5 pages, 5 figures
A Case-Based Look at Integrating Social Context into Software Quality
Creators: name: Radziwill, Nicole
name: Benton, Morgan
name: Boadu, Kenneth
name: Perdomo, Wilson
Publisher: name: arXiv
Year: 2015
Subjects: subject: Software Engineering (cs.SE)
subject: FOS: Computer and information sciences

description: Ensuring high-quality software requires considering the social climate within which the applications will be deployed and used. This can be done by designing quality goals and objectives that are consistent with changing social and ethical landscapes. Using principles of technological determinism, this article presents three cases that illustrate why it is becoming even more important to integrate these concerns into software design and quality assurance. With these examples in mind, this article explains how to consider technological determinism in software design and quality assurance practices to achieve this enhanced sensitivity on a practical level.
Energy Yields of PV Systems - Comparison of Simulation and Reality
Creators: name: Becker, G.
name: Schiebelsberger, B.
name: Weber, W.
name: Schumacher, J.
name: Zehner, M.
name: Wotruba, G.
name: Vodermayer, C.
Publisher: name: WIP-Munich
Year: 2008
Subjects: Components for PV Systems
Engineering and System Integration

description: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 3184-3186
description: Simulation of PV systems is an important feature to predict mainly the yield but also the operational behav-iour. How accurate are the simulation results? Thus the purpose of the work is to demonstrate the differences between simu-lation and reality. In a first step, three 1 kWP PV systems coming from the solar promotion “Sun at School” have been inves-tigated. Measured yields were available for many years. The software tools PVSYST and PVSOL have been applied to simu-late the systems. In a second step, the yields of the 1016 kWP PV system on the New Trade Fair Centre in Munich – which went in operation in 1997 - has been simulated using the block oriented simulation system INSEL. Simulation of two cases on the basis of measured irradiance data in the generator plane and ambient temperature data are leading to best simulation results. The total annual deviation between simulation and measurement is +5,2 % in case of the fit with measured module data and -1,4% for the data sheet case. Of course, this does not mean that the data sheet approach is more accurate since cable losses, mismatch losses etc. have not been considered at all.
Impurity-Induced Antiferromagnetic Domains in the Periodic Anderson Model
Creators: name: Benali, Ali
name: Bai, Zhaojun
name: Curro, Nicholas J.
name: Scalettar, Richard T.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Strongly Correlated Electrons (cond-mat.str-el)
subject: FOS: Physical sciences

description: A central feature of the Periodic Anderson Model is the competition between antiferromagnetism, mediated by the Ruderman-Kittel-Kasuya-Yosida interaction at small conduction electron-local electron hybridization $V$, and singlet formation at large $V$. At zero temperature, and in dimension $d>1$, these two phases are separated by a quantum critical point $V_c$. We use Quantum Monte Carlo simulations to explore the effect of impurities which have a local hybridization $V_{*} < V_c$ in the AF regime which are embedded in a bulk singlet phase with $V > V_c$. We measure the suppression of singlet correlations and the antiferromagnetic correlations which form around the impurity, as well as the size of the resulting domain. Our calculations agree qualitatively with NMR measurements in CeCoIn$_{5-x}$Cd$_x$.
Hybrid Excimer Laser and Aluminium Induced Crystallisation of Silicon Thin Films
Creators: name: Quinn, T.
name: Reehal, H.
Publisher: name: WIP-Munich
Year: 2009
Subjects: Thin Films Solar Cells
Thin Film Crystalline Silicon Solar Cells and Wafer Equivalents

description: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2517-2520
description: The surface morphology and crystalline quality of aluminium-induced crystallised (AIC) silicon and
excimer laser crystallised (ELC) silicon have been studied in order to produce suitable polycrystalline silicon (polySi)
seed layers for epitaxial growth for thin film solar cells. Atomic force microscopy (AFM) shows that AIC Si suffers
from surface features while ELC Si can suffer from both poor crystallinity as judged by Raman spectra and ablation
seen by scanning electron microscopy (SEM). Optimisation of laser fluence improves the crystalline quality of ELC
Si to a similar level to AIC and also produces smoother layers. Raman spectra also show that a further improvement
in crystallinity is possible by combining the two annealing methods. Laser annealing of AIC Si exhibits higher
crystalline quality and reduced stress compared to silicon annealed exclusively by AIC or ELC. Additionally the laser
anneal after AIC reduces the density of fine surface features formed after AIC. Initial results of simultaneous ELC
and thermal AIC are also presented showing a similar improvement in crystalline quality but scanning electron
micrographs show that under the annealing conditions used discontinuities due to laser ablation occur.
Investigating SNPs of stearoyl-CoA desaturase (SCD) in Thai Native Cattle (Kho-Isaan)
Creators: name: Thongsa Buasuk, Kessara Ampaporn
Publisher: name: Faculty of Agriculture
Year: 2023
Subjects: stearoyl-CoA desaturase gene
SNPs
Thai Native Cattle
Kho-Isaan

description: Khon Kaen Agriculture Journal, 51, 1, 58-68
One Thousand New Dwarf Novae from the OGLE Survey
Creators: name: Mroz, P.
name: Udalski, A.
name: Poleski, R.
name: Pietrukowicz, P.
name: Szymanski, M. K.
name: Soszynski, I.
name: Wyrzykowski, L.
name: Ulaczyk, K.
name: Kozlowski, S.
name: Skowron, J.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Solar and Stellar Astrophysics (astro-ph.SR)
subject: FOS: Physical sciences

description: We present one of the largest collections of dwarf novae (DNe) containing 1091 objects that have been discovered in the long-term photometric data from the Optical Gravitational Lensing Experiment (OGLE) survey. They were found in the OGLE fields toward the Galactic bulge and the Magellanic Clouds. We analyze basic photometric properties of all systems and tentatively find a population of DNe from the Galactic bulge. We identify several dozen of WZ Sge-type DN candidates, including two with superhump periods longer than 0.09 d. Other interesting objects include SU UMa-type stars with "early" precursor outbursts or a Z Cam-type star showing outbursts during standstills. We also provide a list of DNe which will be observed during the K2 Campaign 9 microlensing experiment in 2016. Finally, we present the new OGLE-IV real-time data analysis system: CVOM, which has been designed to provide continuous real time photometric monitoring of selected CVs.
description: Acta Astronomica, in press
Improved CIS Solar Cells with Absorbers Grown under Cu-Excess
Creators: name: Aida, Y.
name: Deprédurand, V.
name: Larsen, J.K.
name: Arai, H.
name: Eisenbarth, T.
name: Kurihara, M.
name: Majerus, A.
name: Fèvre, N.
name: Siebentritt, S.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2855-2859
description: High efficiency solar cells based on Cu(In,Ga)Se2 (CIGS) typically comprise Cu-poor
([Cu]/[III]<1) absorbers. On the other hand, Cu-rich ([Cu]/[III]>1) absorber shows better electronic properties
such as low defect densities, less fluctuating potentials and high carrier mobility. However better electronic
properties do not directly reflect to the device performance due to the interface recombination of the Cu-rich
device. In this work, we investigated the effect of a surface treatment by co-evaporation of indium and selenium
on the “Cu-rich” CuInSe2 absorber to form Cu-poorer surface. The performance of the solar cells indicated that
In-Se treatment could improve the open circuit voltage by reducing the reverse saturation current. The efficiency
of surface treated device achieved 12.0 %, improved from 9.5 % efficiency of untreated device. In addition, it was
confirmed from temperature dependent current-voltage measurement that this treatment could suppress interface
recombination. Thus we here show that a decent efficient solar cell can be achieved using surface treated
absorbers grown under Cu-excess, which now opens the path to higher efficiency solar cells.
Industrial Negatively Charged c-Si Surface Passivation by Inline PECVD AlOx
Creators: name: Kania, D.
name: Saint-Cast, P.
name: Wagenmann, D.
name: Hofmann, M.
name: Rentsch, J.
name: Preu, R.
Publisher: name: WIP-Munich
Year: 2009
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Mono- and Multicrystalline Silicon Materials and Cells

description: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2275-2278
description: A high-rate plasma-enhanced chemical-vapor-deposition (PECVD) process for aluminium oxide layers
was developed at low temperatures to reduce minority carrier recombination on p-type c-Si surfaces. A maximum
effective surface recombination velocity Smax of 10 cm s-1 was obtained on highly doped (1 Ω cm) p-type substrates.
The optical constants n and k, the atomic composition of the layer, the surface charge density Qox and the interface
defect density Dit of the PECVD AlOx layers were measured. Our main goal was to transfer the aluminium oxide
deposition process from ALD technique to an industrial inline PECVD system with the aim to implement highquality
field-effect passivation into a large and fast deposition system applicable in the industry. PECVD of AlOx can
be transferred to already existing industrial inline systems to allow for a fast spreading of the technology. Excellent
passivation quality can be obtained with AlOx PECVD deposition with deposition rates at least one order of
magnitude higher compared to ALD. First cell results applying a close-to-industry approach with screen-printed front
and rear metallisation on CZ-Si substrates (1252 mm2) showed VOC values above 630 mV.
Radiative levitation in carbon-enhanced metal-poor stars with s-process enrichment
Creators: name: Matrozis, E.
name: Stancliffe, R. J.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Solar and Stellar Astrophysics (astro-ph.SR)
subject: FOS: Physical sciences

description: A significant fraction of all metal-poor stars are carbon-rich. Most of these carbon-enhanced metal-poor (CEMP) stars also show enhancement in elements produced mainly by the s-process (CEMP-s stars) and evidence suggests that the origin of these non-standard abundances can be traced to mass transfer from a binary asymptotic giant branch (AGB) companion. Thus, observations of CEMP-s stars are commonly used to infer the nucleosynthesis output of low-metallicity AGB stars. A crucial step in this exercise is understanding what happens to the accreted material after mass transfer ceases. Here we present models of the post-mass-transfer evolution of CEMP-s stars considering the physics of thermohaline mixing and atomic diffusion, including radiative levitation. We find that stars with typical CEMP-s star masses (M ~ 0.85 Msun) have very shallow convective envelopes (Menv < 1e-7 Msun). Hence, the surface abundance variations arising from the competition between gravitational settling and radiative levitation should be orders of magnitude larger than observed (e.g. [C/Fe]+4). We are therefore unable to reproduce the spread in the observed abundances with these models and conclude that some other physical process must largely suppress atomic diffusion in the outer layers of CEMP-s stars. We demonstrate that this could be achieved by some additional (turbulent) mixing process operating at the base of the convective envelope, as found by other authors. Alternatively, mass-loss rates around 1e-13 Msun/yr could also negate most of the abundance variations by eroding the surface layers and forcing the base of the convective envelope to move inwards in mass. Since atomic diffusion cannot have a substantial effect on the surface abundances of CEMP-s stars, the dilution of the accreted material, while variable in degree from one star to the next, is most likely the same for all elements.
description: 18 pages, 8 figures. Accepted for publication in A&A
Evaluation of suitable diets and a feasibility study of the black soldier fly production at an industrial scale
Creators: name: Rattanakorn Pornsuwan And Yupa Hanboonsong
Publisher: name: Faculty of Agriculture
Year: 2023
Subjects: Hermetia illucens
organic waste
agro-industrial by-products
animal feed
zero waste

description: Khon Kaen Agriculture Journal, 51, 1, 69-82
N-Type Bridgman CuInSe2+x by Addition of Sodium
Creators: name: Champness, C.H.
name: Myers, H.F.
name: Shih, I.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2832-2835
description: In this laboratory, it is found that elemental sodium, when added in sufficient amount to the pregrowth
melt of Bridgman-grown CuInSe2 single crystals, causes the conductivity type to change from p- to ntype.
For melts of stoichiometric proportions, this conversion takes places precisely for additions of Na between
0.2 and 0.3 at. %. For melts with excess selenium over stoichiometry corresponding to the formula CuInSe2+x, no
conversion was observed for x = 0.2, with the material remaining p-type for Na additions up to at least 6 at. %
Na. However, for smaller x values, the inversion continued to take place, where the percentage of Na causing the
inversion (Nacrit) increased with x, the excess Se. A relation between Nacrit and x has now been identified as a 2:1
atomic ratio of Na to excess Se, corresponding to the formula Na2Se. It is believed that the type inversion is due
to the formation of this compound, resulting in Se-deficient and therefore n-type material. Elemental Cu was also
found in deposits on samples grown with Na, which exhibits the limited solubility of Cu in Se-reduced CuInSe2.
However, the creation of Se-vacancies by the sodium exceeds this when x is small.
Individual project on theme "Psittacara ." (MOOC: CompTech in biology)
Creators: name: Fitz Nobody
Publisher: name: Zenodo
Year: 2023

description: Данный кейс является результатом реализации индивидуального проекта Fitz Nobody по теме "Psittacara ." в рамках онлайн курса "Компьютерные технологии в биологии" (автор – А.В. Ваганов) (https://stepik.org/course/60859/promo)
Characterisation of Spectral Shifting Property of Fluorescent Core-Shell ZnS:Mn Nanoparticles Dispersed in a Polymer Matrix
Creators: name: Sen, S.
name: Singh Solanki, C.S.
name: Bandyopadhyaya, R.
name: Sharma, P.
Publisher: name: WIP
Year: 2011
Subjects: Advanced Photovoltaics : New Concepts and Ultra-High Efficiency
New Materials, Cells and Modules

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 79-81
description: Luminescent nanoparticles can be used to alter the intensity distribution with respect to wavelength of
incident sunlight. This strategy is anticipated to help improve solar cell performance in the low wavelength range. A
possible candidate for such a luminescent down-shifter is manganese-doped zinc sulphide nanoparticles. These
nanoparticles were synthesised by a chemical route to investigate their optical properties and stability. They are
intended for future coupling with a silicon solar cell to bring about enhanced efficiency, translating to a lower cost
per watt. Synthesized ZnS nanoparticles with 10% manganese doping were protected by ZnS shells, introduced by a
novel ultrasonication method. The core-shell nanoparticles were further dispersed in a polyphosphate matrix for
enhanced fluorescence and long-term stability. Prepared samples were characterized by UV-Visible absorption
spectroscopy, fluorescence spectrometry, X-ray diffractometry and transmission electron microscopy. A comparison
of fluorescence from freshly prepared and five-month old samples clearly demonstrated increased stability in the
presence of the polyphosphate matrix. Further work is required to investigate whether optical properties of the
nanoparticles can be controlled suitably for application as luminescent down-shifters to boost silicon PV cell
efficiency.
title: Дистанционное образование в условиях цифровой трансформации современного вуза
Creators: name: ELS IPR BOOKS
Publisher: name: Вузовское образование
Year: 2022

description: В монографии рассматриваются вопросы цифровой трансформации современного образования и роль дистанционного формата в реализации стратегий современного вуза. В процессе исследования авторы теоретически обосновали понятия цифровой трансформации, выявили основные векторы ее направления в образовательных организациях. Кроме того, детально проанализировано понятие дистанционного образования, исторические аспекты его развития, основные виды и функции. Авторами отдельно подчеркивается роль электронно-библиотечных систем, как важного источника лицензионного учебно-методического контента, их основные характеристики и специфика применения в дистанционном образовании. На основе эмпирического исследования сделаны выводы о преимуществах и недостатках дистанционного образования, а также предложены практические рекомендации по его дальнейшему развитию. Монография может быть использована преподавателями и студентами всех направлений подготовки с акцентом на укрупненную группу 44.00.00 «Образование и педагогические науки», а также руководителями профильных отделов образовательных организаций для выработки стратегии дистанционного образования.
Emitter Optimization for Mono- and Multicrystalline Silicon: A Study of Emitter Saturation Currents
Creators: name: Graf, S.
name: Junge, J.
name: Seren, S.
name: Hahn, G.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Wafer-Based Silicon Solar Cells and Materials Technology
Mono- and Multicrystalline Silicon Materials and Cells

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 1770-1773
description: In this work the influence of varied diffusion parameters for an industrial open tube POCl3 diffusion
furnace upon the emitter saturation current density on monocrystalline silicon is investigated. Further on, the effect
of phosphorus gettering on multicrystalline silicon and on the sheet resistance on both mono- and multicrystalline
silicon is under investigation. In addition, diffusion profiles are determined using the ECV (Electrochemical
Capacitance Voltage) technique. Aim of this work is to enhance the performance of lowly doped emitters (80-
140 Ω/sq) applied in a photolithography based high efficiency solar cell process with special respect to defect-rich
block cast multicrystalline silicon material. Understanding the influence of temperature, time and gas flow variations
during the diffusion process is very important to enhance solar cell performance especially for mc silicon. For such
materials the POCl3 gettering effect and the defect kinetics during the diffusion and the cool down phase after the
diffusion are of major interest besides the reliable contact formation and low emitter saturation currents resulting in a
good blue response of solar cells. The experiments performed in this work demonstrate that different mono- and
multicrystalline silicon materials can benefit from adapted diffusion recipes in terms of significantly reduced emitter
saturation currents and increased bulk lifetimes resulting in enhanced solar cell efficiencies.
Silicon Nanowire Based Heterojunction Solar Cells
Creators: name: Jia, G.
name: Steglich, M.
name: Eisenhawer, B.
name: Sill, I.
name: Hausschild, S.
name: Falk, F.
Publisher: name: WIP
Year: 2011
Subjects: Advanced Photovoltaics : New Concepts and Ultra-High Efficiency
New Materials, Cells and Modules

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 86-88
description: Silicon nanowire solar cells with heterojunctions were prepared on single crystalline silicon wafers.
The nanowire arrays were generated by silver catalyzed etching of n-type wafers. After careful removal of the
metallic silver particles a p-doped amorphous silicon shell was deposited around the nanowires by PECVD, which
served as a heteroemitter. Then a transparent conductive oxide (aluminum doped zinc oxide) layer was deposited by
atomic layer deposition which filled the space between the nanowires. The cells were characterized by SEM, TEM,
and EBIC. Under AM1.5 illumination an open circuit voltage of 476 mV and an efficiency of 7.3% was observed on
a cell of 7 mm² area.
10.9%-Efficient CIGS-Based Solar Cells Prepared from Electrodeposited CIGS/Cu/In Precursor Films
Creators: name: Bhattacharya, R.N.
name: Oh, M.-K.
name: Kim, Y.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2829-2831
description: CIGS-based solar cells are fabricated directly from electrodeposited CIGS/Cu/In precursor films.
Electrodeposited precursor films are fabricated by a three-stage electrodeposition process in which: (a) CIGS is
electrodeposited in the first stage, (b) Cu is electrodeposited in the second stage, and (c) an In layer is deposited in the
final third stage. All films are electrodeposited from an aqueous-based solution at room temperature in a twoelectrode
cell configuration, with platinum gauze as the counter electrode and a glass substrate as the working
electrode. The substrate is DC-sputtered with about 1 μm of Mo. The electrodeposited films are selenized at high
temperature (~550ºC) to obtain a 10.9%-efficient device.
Automated Handling and Transport of Crystalline Photovoltaic Wafers
Creators: name: Fischmann, C.
name: Giesen, T.
name: Böttinger, F.
name: Wertz, R.
name: Hoffmeister, M.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Wafer-Based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 1677-1681
description: The handling of 150–120 μm thin wafers weather they are multi-crystalline or mono-crystalline, demands
high standards of the material handling components as well as complex investigations with a closer look on the actual and
future needs for an economic and competitive production of solar cells. The paper will describe the analysis and
evaluation methods developed by the authors and will give an overview about the test results within the thin wafer
automation test platform at the Fraunhofer Institute for Manufacturing Engineering and Automation (IPA).
Experimental Results of a New Distributed Photovoltaic System Architecture
Creators: name: Sanz Martinez, A.
name: Alonso, R.
name: Román Medina, E.
name: Elorduizapatarietxe, S.
name: Ibáñez, P.
Publisher: name: WIP-Munich
Year: 2008
Subjects: Components for PV Systems
Engineering and System Integration

description: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 3148-3151
description: The increase of solar Photovoltaic (PV) applications day by day has promoted the innovative design of new type of solar cells and modules. Especially regarding Building Integration PV(BIPV) systems, lots of great advances have been made recently, particularly in new inverter topologies and topics related with aesthetic concepts of PV modules. Anyway, the especial working conditions of BIPV systems, due to different orientations and inclinations, shadows, reflections, dirtiness, etc. cause serious energetic losses and expensive maintenance costs. Some of these peculiarities are intrinsic to BIPV systems and can not disappear, but can be minimized using distributed intelligent architectures. The current work presents the first experimental results conclusions of the ROBOTIKER-TECNALIA’s distributed PV system architecture.
In-Line Metrology for Cell Processing with a Focus on Micro-Cracks: Comparative Analysis and Cost Benefit
Creators: name: Skumanich, A.
name: Ryabova, E.
name: Malik, I.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Wafer-Based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 1697-1701
description: There has recently been significant activity to develop metrology for in-line inspection for cell processing.
The two key issues for capture are: micro-cracks and shunts. Various techniques have been developed to address the
micro-cracks and the approaches range in probe method and in level of development for commercial implementation.
The paper examines in an independent, comprehensive and objective manner, the various approaches to identify the
opportunities for overall process improvement and manufacturing cost reduction. A key finding is the gap between the
requirements for micro-crack capture and an actual cost effective solution. The main issue is that micro-cracks are
challenging to capture due to complex signatures, and that some may be “nuisance” where as others will be “fatal”, and
still others will start the former and grow during processing to be the latter. A overview is presented, the challenges are
enumerated, and a cost value analysis is performed. It is evident that a solution for reliable micro-crack detection is
necessary, but will require more research focus to achieve the capability and to realize the economic beenfits.
Advanced Solar Cell Front Grid Optimization
Creators: name: Kulushich, G.
name: Zapf-Gottwick, R.
name: Mühlbauer, M.
name: Nguyen, V.X.
name: Werner, J.H.
Publisher: name: WIP-Munich
Year: 2009
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Mono- and Multicrystalline Silicon Materials and Cells

description: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2237-2241
description: This work shows an advanced method for front grid optimization. The theoretical results of the present
method promises  > + 0.4 % absolute efficiency gain for industrial fine-line printed Si solar cells compared to
industrial front grid design. The optimal front grid design consisting of more than 85 fingers of width wf < 70 μm,
and two busbars of width wb = 1.5 mm. The method at hand takes into account the change of the current and voltage
at the maximum power point with the change of the solar cell front grid design. The present work simulates the solar
cell efficiency for different front grid design.
Texturing of Crystalline Silicon by Hydrogen Radicals Generated Using Remote Plasma Technique
Creators: name: Ogawa, K.
name: Kadono, F.
name: Dhamrin, M.
name: Kamisako, K.
Publisher: name: WIP-Munich
Year: 2009
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Mono- and Multicrystalline Silicon Materials and Cells

description: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2250-2253
description: A new texturing technique for crystalline silicon wafers using hydrogen radicals generated by
microwave remote plasma at room temperature is investigated. Texturing of crystalline silicon resulted in a very low
surface reflectance below 5%, and the optimal texturization parameters were found. The change of texturing duration
leads to controlling the texture structure. Smoothing process using HF/HNO3 mixture to further improve the surface
after hydrogen plasma texturing resulted in an increase of the surface reflectance. The reflectance increased by the
same amount after smoothing regardless the initial texturization condition. The results also show that the surface
texture roughness at various durations before smoothing does not give remarkable effect on reflectance after the
smoothing process, which indicates that it is the pyramids size that reduces the reflectance. The combination of
smoothing process and dry texturing requires more investigation to realize the optimum condition for solar cell
applications.
Effect on the Electron Beam Annealing of Cu-In-Se Precursors Prepared by Low Frequency (LF) Co-Sputtering Method
Creators: name: Jeong, C.
name: Lee, S.
name: Kim, Y.H.
name: Kim, J.H.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2845-2847
description: Cu-In-Se precursors were prepared by low frequency co-sputtering method, which can be changeable
of frequency under the generation of DC power. Electron beam annealing method as a novel method was used for
crystallization of Cu-In-Se precursors. Also the compositional ratio of Cu-In-Se was investigated for the confirmation
of the possibility in crystallization without any addition of selenium. Through our works, e-beam annealing method
can be a good candidate for rapid crystallization within 300sec. and with no addition of selenium.
Quality Investigation of Compensated Aluminium-Doped Multicrystalline Silicon Ingot
Creators: name: Ban, N.
name: Dhamrin, M.
name: Goh, L.W.
name: Saegusa, K.
name: Tabuchi, H.
name: Megumi, T.
name: Kamisako, K.
Publisher: name: WIP-Munich
Year: 2009
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Mono- and Multicrystalline Silicon Materials and Cells

description: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2258-2261
description: One of the possibilities to reduce the phosphorus and boron contents from the polysilicon is to use the
enhanced solid/liquid segregation tendency of impurities at low temperature by alloying MG-Si with aluminum. To
explore such an option, impact of aluminum as a dopant and as possible recombination complex must be investigated.
In this work, Al-doped ingot with different dopant concentration is grown to investigate the aluminum and its
segregation mechanism impact on carrier lifetimes. 10 Kg electronic grade silicon was charged in a SiN-coated silica
crucible with 10 ppma aluminium. The average resistivity of mc-Si ingot after P-gettering was around 9 Ω·cm at the
middle of ingot. Carrier lifetimes around 30 μs were realized after the ingot growth mainly in the middle region of the
Al-doped ingot. Metal impurities of the ingot were removed by phosphorus gettering and carrier lifetimes were
improved to reach 70 μs at the middle region of the ingot. In conclusion, doping the multicrystalline silicon ingot
with 10 ppma aluminum resulted in relatively good lifetime. Therefore, aluminum contents below 10 ppma will not
affect the mc-Si ingot quality.
The NASCENT Project
Creators: name: Janz, S.
name: Löper, P.
name: Schnabel, M.
name: Zacharias, M.
name: Hiller, D.
name: Gutsch, S.
name: Hartel, A.M.
name: Summonte, C.
name: Canino, M.
name: Allegrezza, M.
name: Ossicini, S.
name: Guerra, R.
name: Marri, I.
name: Garrido, B.
name: Hernández, S.
name: López-Vidrier, J.
name: Valenta, J.
name: Kubera, T.
name: Foti, M.
name: Gerardi, C.
Publisher: name: WIP
Year: 2011
Subjects: Advanced Photovoltaics : New Concepts and Ultra-High Efficiency
New Materials, Cells and Modules

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 22-27
description: We present an overview of the project NASCEnT and the first results we were able to achieve after one
year of project duration. The overall objective of the project is to develop new nano-materials with new production
technologies and to fabricate silicon quantum dot (Si QD) materials for all-silicon tandem solar cells to achieve
increased efficiencies. The understanding of electrical transport and recombination mechanisms in these newly
developed nano-materials will enable us to design novel solar cell structures that help to overcome the efficiency
limits of conventional solar cell concepts. So far we developed simple device structures and process sequences for
both material systems (Si QDs in silicon oxide and silicon carbide) and tested a pin solar cell structure. Another
objective of the project is to ensure the compatibility of the newly developed technologies with high-throughput
processing leading to further cost-reduction. Within the scope of this project the novel concept of band gap-tuneable
quantum dot superlattices is to be exploited in combination with a wafer-based high efficiency silicon solar cell as
well as with a thin-film solar cell structure. The outcome of the project will be significant progress in solar cell
evolution and will lead to higher efficiencies for solar cells and to ongoing cost-reductions from both a short-term and
a long-term perspective.
Aluminum-Catalyzed Silicon Nanowire Array Growth Followed by In-situ Catalyst Dry Etching for Photovoltaic Application
Creators: name: Kohen, D.
name: Tileli, V.
name: Morin, C.
name: Faucherand, P.
name: Cayron, C.
name: Dufourcq, J.
name: Noël, S.
name: Levis, M.
name: Perraud, S.
name: Brioude, A.
Publisher: name: WIP
Year: 2011
Subjects: Advanced Photovoltaics : New Concepts and Ultra-High Efficiency
New Materials, Cells and Modules

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 37-40
description: Aluminum-catalyzed epitaxial growth of silicon nanowire (SiNW) arrays was performed on Si
wafer by chemical vapor deposition at 600°C using silane diluted in hydrogen. The effect of silane partial
pressure on the SiNW morphology was studied. At high silane partial pressure, the surface is rough with a thick
amorphous coating whereas at low silane partial pressure the surface is smooth. The arrays showed a low optical
total reflectance in the visible light spectrum, with a minimum of 2% around 450 nm wavelength. Following
SiNW growth, dry etching of the Al catalyst was performed in situ using HCl chemistry at 600°C. The
effectiveness of aluminum etching was assessed by energy dispersive X-ray spectroscopy and by a controlled
growth experiment. This SiNW array growth and subsequent catalyst dry etching opens up the possibility of an
all in vacuum fabrication process of radial junction solar cells.
High Performance Top (2.2 eV) and Bottom (0.7 eV) Solar Cells for 5 Junction Lateral Spectral Splitting System
Creators: name: Barnett, A.
name: Lu, X.
name: Wang, Y.
name: Lochtefeld, A.
name: Gerger, A.
name: Kerestes, C.
name: Opila, R.
Publisher: name: WIP
Year: 2011
Subjects: Advanced Photovoltaics : New Concepts and Ultra-High Efficiency
New Materials, Cells and Modules

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 48-53
description: The top and bottom solar cells have important roles for a five junction solar cells system to achieve over
50% solar cell efficiency and over 41% module efficiency with lateral spectrum splitting. In this work, wide band gap
GaP solar cells and low band gap Ge:Si solar cells are designed, fabricated and analyzed. Systematic first principle
simulations were developed to design the solar cell structures. Quantum efficiency and current-voltage measurements are
used to analyze the solar cell performance and to develop predictive models. The best reported GaP solar cell achieved
2.90% efficiency which compares to the best previously reported efficiency of 1.17%. The Ge:Si on Si solar cells
achieved an efficiency of 1.37% below a Si filter at 30 suns. This is 60% of the theoretical maximum.