title: ÐÐ¾Ð´Ð±Ð¾ÑÐºÐ° ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐµÐ¶Ð¸Ð¼Ð¾Ð² Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¿ÑÐ¸ Ð¿ÑÐ¾Ð¸Ð·Ð²Ð¾Ð´ÑÑÐ²Ðµ ÑÐ¾ÑÐ¾ÑÐ°Ð±Ð»Ð¾Ð½Ð¾Ð²
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Selection of technological modes of ioh beam etching processes in the production of photomasks
Creators: name: ÐÐ¶ÑÑÑÐ¿Ð¾Ð², Ð¢Ð¸Ð¼ÑÑ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð¸Ð¾Ð½Ð½ÑÐ¹ Ð¸ÑÑÐ¾ÑÐ½Ð¸Ðº
Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
Ð¿ÑÐ¾Ð¸Ð·Ð²Ð¾Ð´ÑÑÐ²Ð¾ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð²
ÑÐ¾ÑÐ¾ÑÐ°Ð±Ð»Ð¾Ð½
ÑÐ¾ÐºÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¹ Ð¸Ð¾Ð½Ð½ÑÐ¹ Ð¿ÑÑÐ¾Ðº
ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ðµ ÑÐµÐ¶Ð¸Ð¼Ñ
ion source
ion beam etching
photomask
semiconductor manufacturing
focused ion beam
technological modes

description: Ð¢ÐµÐ¼Ð° Ð²ÑÐ¿ÑÑÐºÐ½Ð¾Ð¹ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ: Â«ÐÐ¾Ð´Ð±Ð¾ÑÐºÐ° ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐµÐ¶Ð¸Ð¼Ð¾Ð² Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¿ÑÐ¸ Ð¿ÑÐ¾Ð¸Ð·Ð²Ð¾Ð´ÑÑÐ²Ðµ ÑÐ¾ÑÐ¾ÑÐ°Ð±Ð»Ð¾Ð½Ð¾Ð²Â». ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¿ÑÐ¾ÑÐµÑÑÐ° Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¾Ñ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð². ÐÐ°Ð´Ð°ÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐµÑÐ°Ð»Ð¸ÑÑ Ð² ÑÐ¾Ð´Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ: 1. ÐÐ½Ð°Ð»Ð¸Ð· Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð², Ð²Ð»Ð¸ÑÑÑÐ¸Ñ Ð½Ð° Ð¿ÑÐ¾ÑÐµÑÑ Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ. 2. ÐÐ·ÑÑÐµÐ½Ð¸Ðµ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐµÐ¹ ÑÑÑÐ¾ÐµÐ½Ð¸Ñ Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð¹ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ Nordiko Î±120. 3. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ° Ð¸ Ð°Ð½Ð°Ð»Ð¸Ð· Ð¿Ð¾Ð»ÑÑÐ¸Ð²ÑÐ¸ÑÑÑ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð². 4. ÐÐ¾Ð´Ð±Ð¾Ñ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½Ð¾Ð³Ð¾ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÐµÐ¶Ð¸Ð¼Ð° Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ. Ð Ð°Ð±Ð¾ÑÐ° Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð° Ð½Ð° Ð±Ð°Ð·Ðµ ÐÐÐ¢Ð Â«ÐÐ²Ð°Ð½Ð³Ð°ÑÐ´Â», Ð³Ð´Ðµ ÑÐ¾Ð±Ð¸ÑÐ°Ð»Ð°ÑÑ Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð°Ñ ÑÐ°ÑÑÑ ÑÐ°ÐºÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð°: ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¸Ð½ÑÐ¾ÑÐ¼Ð°ÑÐ¸Ñ Ð¾ Ð³Ð»ÑÐ±Ð¸Ð½Ðµ Ð¿ÑÐ¾ÑÑÐ°Ð²Ð»ÐµÐ½Ð½Ð¾Ð³Ð¾ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð°. ÐÑÐ»Ð¸ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ñ ÑÐ°ÑÑÐµÑÑ, Ð²ÑÑÐ²Ð»ÐµÐ½Ñ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¸ Ð¿Ð¾ÑÑÑÐ¾ÐµÐ½Ñ Ð³ÑÐ°ÑÐ¸ÐºÐ¸, Ð¿Ð¾ÐºÐ°Ð·ÑÐ²Ð°ÑÑÐ¸Ðµ Ð½Ð°Ð³Ð»ÑÐ´Ð½Ð¾, ÐºÐ°ÐºÐ¸Ð¼ Ð¾Ð±ÑÐ°Ð·Ð¾Ð¼ Ð¼ÐµÐ½ÑÐµÑÑÑ Ð½ÐµÑÐ°Ð²Ð½Ð¾Ð¼ÐµÑÐ½Ð¾ÑÑÑ Ð¸ ÑÐºÐ¾ÑÐ¾ÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¿ÑÐ¸ ÑÐµÑ Ð¸Ð»Ð¸ Ð¸Ð½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ. Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð±ÑÐ»Ð¸ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½Ñ Ð³ÑÐ°ÑÐ¸ÑÐµÑÐºÐ¸ Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½Ð¾Ð³Ð¾ Ð¿ÑÐ¾Ð´ÑÐºÑÐ° Origin. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð±ÑÐ»Ð¾ Ð¿ÑÐ¾Ð°Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ñ Ð½Ð° ÑÐµÑÐºÐ°Ñ Ð¸Ð¾Ð½Ð½Ð¾Ð³Ð¾ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ° Ð¸ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ° Ð½Ð° ÑÐ°Ð²Ð½Ð¾Ð¼ÐµÑÐ½Ð¾ÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¿Ð»ÐµÐ½Ð¾Ðº Ð¸Ð· Ð¾ÐºÑÐ¸Ð´Ð° Ð¶ÐµÐ»ÐµÐ·Ð° Ð¸ ÑÑÐ¾Ð¼Ð°. ÐÑÐ»Ð¸ Ð¿Ð¾Ð´Ð¾Ð±ÑÐ°Ð½Ñ ÑÐµÐ¶Ð¸Ð¼Ñ Ñ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÐ¼ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸ÐµÐ¼ Ð½ÐµÑÐ°Ð²Ð½Ð¾Ð¼ÐµÑÐ½Ð¾ÑÑÐ¸ Ð¸ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ.
description: The topic of the final qualifying work: Â«Selection of technological modes of ion-beam etching processes in the production of photomasksÂ». This work is devoted to the study of the dependence of the ion beam etching process on technological parameters. Tasks that were solved during the study: 1. Analysis of parameters affecting the ion beam etching process. 2. Study of the structural features of the Nordiko Î±120 ion beam installation. 3. Conducting an experiment and analyzing the resulting samples. 4. Selection of the optimal technological mode of ion beam etching. The work was carried out based on the Research Institute of Technology Â«AvangardÂ», where a significant part of the factual material was collected: the results of ion-beam etching, as well as information about the depth of the etched material. Calculations were carried out and graphs were constructed showing clearly how the unevenness and speed of etching changes under certain conditions. The graphs were built in the Origin app. As a result, the effect of the voltage on the grids of the ion source and the power of the source on the uniformity of etching of films made of iron oxide and chromium was analyzed. Modes with an optimal ratio of unevenness and etching speed were selected.