title: Ð­ÑÑÐµÐºÑÑ ÑÐµÐ·Ð¸ÑÑÐ¸Ð²Ð½Ð¾Ð¹ Ð¿Ð°Ð¼ÑÑÐ¸ Ð² ÐºÐ¾Ð¼Ð¿Ð¾Ð·Ð¸ÑÐ½ÑÑ Ð¿Ð»ÐµÐ½ÐºÐ°Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿ÐµÑÐ¾Ð²ÑÐºÐ¸ÑÐ¾Ð² Ð¸ ÑÐ°ÑÑÐ¸Ñ Ð¾ÐºÑÐ¸Ð´Ð° Ð³ÑÐ°ÑÐµÐ½Ð°
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Effects of resistive memory in composite films based on organometallic perovskites and graphene oxide particles
Creators: name: ÐÑÑÐ¸Ð¿Ð¾Ð², ÐÑÑÑÐ¼
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ðµ Ð¿ÐµÑÐ¾Ð²ÑÐºÐ¸ÑÑ
Ð¾ÐºÑÐ¸Ð´ Ð³ÑÐ°ÑÐµÐ½Ð°
ÑÐ»ÐµÐºÑÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¾ÑÑÑ
ÑÐµÐ·Ð¸ÑÑÐ¸Ð²Ð½Ð¾Ðµ Ð¿ÐµÑÐµÐºÐ»ÑÑÐµÐ½Ð¸Ðµ
ÑÑÐµÐ¹ÐºÐ¸ Ð¿Ð°Ð¼ÑÑÐ¸
organometallic perovskites
graphene oxide
electrical conductivity
resistive switching
memory cells

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° ÑÑÑÐµÐºÑÑ ÑÐµÐ·Ð¸ÑÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÐºÐ»ÑÑÐµÐ½Ð¸Ñ Ð² ÐºÐ¾Ð¼Ð¿Ð¾Ð·Ð¸ÑÐ½ÑÑ Ð¿Ð»ÐµÐ½ÐºÐ°Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿ÐµÑÐ¾Ð²ÑÐºÐ¸ÑÐ¾Ð² CH3NH3PbBr3 Ð¸ CH3NH3PbI3 Ñ ÑÐ°ÑÑÐ¸ÑÐ°Ð¼Ð¸ Ð¾ÐºÑÐ¸Ð´Ð° Ð³ÑÐ°ÑÐµÐ½Ð° (GO). ÐÑÐ½Ð¾Ð²Ð½Ð°Ñ ÑÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ - Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÑÑÐµÐºÑÐ¾Ð² ÑÐµÐ·Ð¸ÑÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÐºÐ»ÑÑÐµÐ½Ð¸Ñ Ð² Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿ÐµÑÐ¾Ð²ÑÐºÐ¸ÑÐ°Ñ Ð¸ Ð¸Ñ ÐºÐ¾Ð¼Ð¿Ð¾Ð·Ð¸ÑÐ°Ñ Ñ ÑÐ°ÑÑÐ¸ÑÐ°Ð¼Ð¸ Ð¾ÐºÑÐ¸Ð´Ð° Ð³ÑÐ°ÑÐµÐ½Ð°, Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ ÑÐµÐ¶Ð¸Ð¼Ð¾Ð² Ð¸ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼Ð° ÑÐµÐ·Ð¸ÑÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÐºÐ»ÑÑÐµÐ½Ð¸Ñ. Ð£ÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¾, ÑÑÐ¾ ÑÑÑÐµÐºÑ ÑÐµÐ·Ð¸ÑÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÐºÐ»ÑÑÐµÐ½Ð¸Ñ Ð² Ð¿Ð»ÐµÐ½ÐºÐ°Ñ Ag/[60]PCBM/CH3NH3PbBr3(I3):GO/PEDOT:PSS/ITO/glass Ð¿ÑÐ¾ÑÐ²Ð»ÑÐµÑÑÑ Ð² ÑÐµÐ·ÐºÐ¾Ð¼ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ð¸ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ñ Ð¸Ð· HRS (high resistance state) Ð² LRS (low re-sistance state) Ð¿ÑÐ¸ Ð¿Ð¾Ð´Ð°ÑÐµ ÐºÐ°Ðº Ð¿Ð¾Ð»Ð¾Ð¶Ð¸ÑÐµÐ»ÑÐ½Ð¾Ð³Ð¾, ÑÐ°Ðº Ð¸ Ð¾ÑÑÐ¸ÑÐ°ÑÐµÐ»ÑÐ½Ð¾Ð³Ð¾ ÑÐ¼ÐµÑÐµÐ½Ð¸Ñ Ð½Ð° Ag Ð¸ ITO ÑÐ»ÐµÐºÑÑÐ¾Ð´Ñ, ÐºÐ°Ðº Ð² ÑÐµÐ¼Ð½Ð¾ÑÐµ, ÑÐ°Ðº Ð¸ Ð¿ÑÐ¸ Ð¾ÑÐ²ÐµÑÐµÐ½Ð¸Ð¸ Ð¸Ð¼Ð¸ÑÐ°ÑÐ¾ÑÐ¾Ð¼ ÑÐ¾Ð»Ð½ÐµÑÐ½Ð¾Ð³Ð¾ ÑÐ²ÐµÑÐ°. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð½ÑÐµ ÐºÐ¾Ð¼Ð¿Ð¾Ð·Ð¸ÑÐ½ÑÐµ Ð¿Ð»ÐµÐ½ÐºÐ¸ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿ÐµÑÐ¾Ð²ÑÐºÐ¸ÑÐ¾Ð² CH3NH3PbBr3 Ð¸ CH3NH3PbI3 Ñ ÑÐ°ÑÑÐ¸ÑÐ°Ð¼Ð¸ Ð¾ÐºÑÐ¸Ð´Ð° Ð³ÑÐ°ÑÐµÐ½Ð° Ñ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸ÐµÐ¹ 1â3 wt.% Ð¸ ÑÐ»Ð¾ÐµÐ¼ ÑÑÐ»Ð»ÐµÑÐµÐ½Ð° [60]PCBM Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½Ñ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ ÑÐ½ÐµÑÐ³Ð¾Ð½ÐµÐ·Ð°Ð²Ð¸ÑÐ¸Ð¼ÑÑ ÑÑÐµÐµÐº RRAM Ð¿Ð°Ð¼ÑÑÐ¸ Ñ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð¸ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð·Ð°Ð¿Ð¸ÑÑÑ Ð¸Ð½ÑÐ¾ÑÐ¼Ð°ÑÐ¸Ð¸. ÐÑÐµÐ´Ð¿Ð¾Ð»Ð¾Ð¶ÐµÐ½Ð¾, ÑÑÐ¾ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼ ÑÐµÐ·Ð¸ÑÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÐºÐ»ÑÑÐµÐ½Ð¸Ñ ÑÐ²ÑÐ·Ð°Ð½ Ñ Ð·Ð°ÑÐ²Ð°ÑÐ¾Ð¼ Ð¸ Ð½Ð°ÐºÐ¾Ð¿Ð»ÐµÐ½Ð¸ÐµÐ¼ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÐµÐ¹ Ð·Ð°ÑÑÐ´Ð° Ð² ÑÐ°ÑÑÐ¸ÑÐ°Ñ GO Ð·Ð° ÑÑÐµÑ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² Ð²Ð¾ÑÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¸Ñ/Ð¾ÐºÐ¸ÑÐ»ÐµÐ½Ð¸Ñ.
description: The given work is devoted to the effect of re-sistive switching in composite films based on organometallic perovskites CH3NH3PbBr3 and CH3NH3PbI3 with graphene oxide (GO) particles. The main goal of this work is to study the effects of resistive switching in organometallic perovskites and their composites with parts of graphene oxide, determination of modes and mechanism of resistive switching. It is found that the resistive switching effect in Ag/[60]PCBM/CH3NH3PbBr3(I3):GO/PEDOT:PSS/ITO/glass films is observed as a sharp change from HRS (high resistance state) to LRS (low resistance state) as both positive and negative biases are applied to Ag and ITO elec-trodes in the darkness and during illumination by a sunlight imitator. The composite films based on organometallic perovskites CH3NH3PbBr3 and CH3NH3PbI3 with graphene oxide (GO) particles with concentration 1â3 wt. % and a layer of [60]PCBM fullerene are promising for the creation of non-volatile RRAM memory cells with electrical and optical information recording. The resistive switching mechanism is assumed to be related to the capture and accumulation of charge carriers in GO particles due to the reduction/oxidation processes.