title: Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐ¸ÑÐµÐ»Ñ ÑÐ¾ÐºÐ° ÐºÐ¾ÑÐ¾ÑÐºÐ¾Ð³Ð¾ Ð·Ð°Ð¼ÑÐºÐ°Ð½Ð¸Ñ 210 ÐºÐ Ð½Ð° Ð¿Ð¾ÑÑÐ¾ÑÐ½Ð½Ð¾Ð¼ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ð¸ 0,6 ÐºÐ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Development of a semiconductor short-circuit current limiter 210 kA at a direct voltage of 0.6 kV
Creators: name: ÐÑÑÐ½Ð¸ÐºÐ¾Ð², ÐÐ¸ÐºÐ¸ÑÐ°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2022
Subjects: Ð­Ð»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ¾Ðº Ð¿Ð¾ÑÑÐ¾ÑÐ½Ð½ÑÐ¹
Ð¢Ð¾ÐºÐ¸ ÐºÐ¾ÑÐ¾ÑÐºÐ¾Ð³Ð¾ Ð·Ð°Ð¼ÑÐºÐ°Ð½Ð¸Ñ
Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐ¸ÑÐµÐ»Ñ ÑÐ¾ÐºÐ°
Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ðµ ÑÑÑÑÐ¾Ð¹ÑÑÐ²Ð¾
Ð¿ÐµÑÐµÐ½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ðµ
Ð²ÑÐ±Ð¾Ñ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ¾Ð²
Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ ÑÑ ÐµÐ¼Ñ
current limiter
semiconductor device
overvoltage
selection of elements
circuit simulation

description: Ð¢ÐµÐ¼Ð° Ð²ÑÐ¿ÑÑÐºÐ½Ð¾Ð¹ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ: Â«Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐ¸ÑÐµÐ»Ñ ÑÐ¾ÐºÐ° ÐºÐ¾ÑÐ¾ÑÐºÐ¾Ð³Ð¾ Ð·Ð°Ð¼ÑÐºÐ°Ð½Ð¸Ñ 210 ÐºÐ Ð½Ð° Ð¿Ð¾ÑÑÐ¾ÑÐ½Ð½Ð¾Ð¼ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ð¸ 0,6 ÐºÐÂ». ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð²ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ð¸Ñ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ¸ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐ¸ÑÐµÐ»Ñ ÑÐ¾ÐºÐ° ÐºÐ¾ÑÐ¾ÑÐºÐ¾Ð³Ð¾ Ð·Ð°Ð¼ÑÐºÐ°Ð½Ð¸Ñ, Ð² ÑÐ°ÑÑÐ½Ð¾ÑÑÐ¸ ÑÐ¾ÐºÐ° ÐºÐ¾ÑÐ¾ÑÐºÐ¾Ð³Ð¾ Ð·Ð°Ð¼ÑÐºÐ°Ð½Ð¸Ñ 210ÐºÐ Ð´Ð¾ ÑÐ¾ÐºÐ° 20-30ÐºÐ Ð² ÑÐµÑÐµÐ½Ð¸Ð¸ 400Ð¼Ñ.Â ÐÐ°Ð´Ð°ÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐµÑÐ°Ð»Ð¸ÑÑ Ð² ÑÐ¾Ð´Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ: 1. Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° Ð¿ÑÐ¸Ð½ÑÐ¸Ð¿Ð¸Ð°Ð»ÑÐ½Ð¾Ð¹ ÑÑÐµÐ¼Ñ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐ¸ÑÐµÐ»Ñ ÑÐ¾ÐºÐ°. 2. ÐÐ¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ°Ð±Ð¾ÑÑ ÑÑÐµÐ¼Ñ Ð² Ð½Ð¾ÑÐ¼Ð°Ð»ÑÐ½Ð¾Ð¼ ÑÐµÐ¶Ð¸Ð¼Ðµ Ð¸ Ð² ÑÐµÐ¶Ð¸Ð¼Ðµ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐµÐ½Ð¸Ñ ÑÐ¾ÐºÐ° ÐºÐ¾ÑÐ¾ÑÐºÐ¾Ð³Ð¾ Ð·Ð°Ð¼ÑÐºÐ°Ð½Ð¸Ñ. 3. ÐÑÐ±Ð¾Ñ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ¾Ð² ÑÑÐµÐ¼Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ð°Ð½Ð¸Ð¸ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð² Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ. 4. ÐÐ½Ð°Ð»Ð¸Ð· ÑÑÐµÐ¼Ñ Ð½Ð° Ð½Ð°Ð»Ð¸ÑÐ¸Ðµ Ð¿ÐµÑÐµÐ½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ð¹ Ð½Ð° ÐºÐ¾Ð¼Ð¼ÑÑÐ°ÑÐ¸Ð¾Ð½Ð½ÑÑ ÑÑÑÑÐ¾Ð¹ÑÑÐ²Ð°Ñ Ð¸ ÑÐ¿Ð¾ÑÐ¾Ð±Ð¾Ð² Ð·Ð°ÑÐ¸ÑÑ Ð¾Ñ Ð½Ð¸Ñ. 5. ÐÑÐµÐ½ÐºÐ° ÑÐµÐ¿Ð»Ð¾Ð²Ð¾Ð¹ ÑÐ½ÐµÑÐ³Ð¸Ð¸, Ð²ÑÐ´ÐµÐ»ÑÑÑÐµÐ¹ÑÑ Ð½Ð° ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½ÑÐ°Ñ ÑÑÐµÐ¼Ñ. 6. ÐÐ½Ð°Ð»Ð¸Ð· Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½ÑÑ Ð¿ÑÑÐµÐ¹ ÑÐ°Ð·Ð²Ð¸ÑÐ¸Ñ ÑÑÑÑÐ¾Ð¹ÑÑÐ²Ð°. 7. ÐÐ½Ð°Ð»Ð¸Ð· ÑÐ¿Ð¾ÑÐ¾Ð±Ð¾Ð² Ð¿Ð°ÑÐ°Ð»Ð»ÐµÐ»ÑÐ½Ð¾Ð³Ð¾ Ð¿Ð¾Ð´ÐºÐ»ÑÑÐµÐ½Ð¸Ñ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ ÑÑÑÑÐ¾Ð¹ÑÑÐ². Ð Ð°Ð±Ð¾ÑÐ° Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð° Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐµÐ¹ ÑÐ°Ð±Ð¾ÑÑ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ ÑÑÑÑÐ¾Ð¹ÑÑÐ². Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð° Ð¿Ð¾Ð»ÑÑÐµÐ½Ð° ÑÑÐµÐ¼Ð° ÑÑÑÑÐ¾Ð¹ÑÑÐ²Ð° Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐ¸ÑÐµÐ»Ñ ÑÐ¾ÐºÐ°, ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½ Ð°Ð»Ð³Ð¾ÑÐ¸ÑÐ¼ ÑÐ¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ. ÐÐ¾Ð»ÑÑÐµÐ½Ñ Ð¾ÑÑÐ¸Ð»Ð»Ð¾Ð³ÑÐ°Ð¼Ð¼Ñ ÑÐ¾ÐºÐ¾Ð² Ð¸ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ð¹ Ð¿Ð¾ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ°Ð¼ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÑÐµÐ¼Ñ Ð² ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÐµÐ¶Ð¸Ð¼Ð°Ñ ÑÐ°Ð±Ð¾ÑÑ. ÐÑÐ±ÑÐ°Ð½Ñ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½ÑÑ ÑÑÐµÐ¼Ñ. ÐÑÐ±ÑÐ°Ð½Ð° ÑÐ¸ÑÑÐµÐ¼Ð° Ð´Ð»Ñ Ð·Ð°ÑÐ¸ÑÑ Ð¾Ñ Ð¿ÐµÑÐµÐ½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ð¹ Ð½Ð° ÐºÐ¾Ð¼Ð¼ÑÑÐ¸ÑÑÑÑÐ¸Ñ ÑÑÑÑÐ¾Ð¹ÑÑÐ²Ð°Ñ. ÐÑÐµÐ½ÐµÐ½Ñ ÑÐµÐ¿Ð»Ð¾Ð²ÑÐµ ÑÐµÐ¶Ð¸Ð¼Ñ ÑÑÐµÐ¼Ñ. Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ñ ÑÐµÐºÐ¾Ð¼ÐµÐ½Ð´Ð°ÑÐ¸Ð¸ Ð´Ð»Ñ Ð¿ÑÐ¾Ð¸Ð·Ð²Ð¾Ð´ÑÑÐ²Ð° Ð¸ ÑÑÐ¾Ð²ÐµÑÑÐµÐ½ÑÑÐ²Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÑÐµÐ¼Ñ.
description: The subject of the graduate qualification work is "Development of a semiconductor short-circuit current limiter 210 kA at a direct voltage of 0.6 kV". The given work is devoted to the development of a semiconductor short-circuit current limiter, in particular, a short-circuit current of 210 kA up to a current of 20-30 kA for 400ms.Â Tasks that were solved in the course of the study: 1. Development of a scheme of a semiconductor current limiter. 2. Simulation of the operation of the circuit in the normal mode and in the mode of limiting the short-circuit current. 3. Selection of circuit elements based on simulation results. 4. Analysis of the circuit for the presence of overvoltage on switching devices and methods of protection against them. 5. Estimation of thermal energy released on circuit components. 6. Analysis of promising ways of device development. 7. Analysis of methods for parallel connection of semiconductor devices. The work was fulfilled on the basis of studying the features of the operation of semiconductor devices. As a result of the work, a scheme of the device of a semiconductor current limiter was obtained, a control algorithm was developed. Oscillograms of currents and voltages are obtained based on the results of circuit simulation in various operating modes. Schematic components selected. A system for overvoltage protection on switching devices has been selected. The thermal regimes of the scheme are estimated. Recommendations for the production and improvement of the circuit have been developed.