title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐµÐ¹ ÐÐÐ­ Ð½Ð¸ÑÑÐ¸Ð´Ð¾Ð² Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð² III Ð³ÑÑÐ¿Ð¿Ñ Ð¸ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐ¾ÑÑÐ¾Ð²Ð¾Ð¹ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ð¸ Ð½Ð° Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÑ Ð¿Ð¾Ð»ÑÑÐ°ÐµÐ¼ÑÑ ÑÐ»Ð¾ÐµÐ²
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: The study of the unique features of MBE group III nitrides and the influence of the growth geometry configuration on the thickness uniformity of epitaxial layers
Creators: name: ÐÑÑÐ»Ð°ÐºÐ¸Ð½, ÐÐ½Ð´ÑÐµÐ¹
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð»ÑÑÐµÐ²Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð½Ð¸ÑÑÐ¸Ð´Ñ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð² III Ð³ÑÑÐ¿Ð¿Ñ
Ð±ÑÑÐµÑÐ½ÑÐ¹ ÑÐ»Ð¾Ð¹
Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÐµ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÑ ÑÐ¾ÑÑÐ°
molecular-beam epitaxy
group III nitrides
buffer-layer
optimized growth parameters

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐµÐ¹ ÑÐ¾ÑÑÐ° Ð±ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð¾ÐµÐ² Ð² III-N ÑÑÑÑÐºÑÑÑÐ°Ñ Ð¸ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐ¾ÑÑÐ¾Ð²Ð¾Ð¹ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ð¸ (ÑÐ°ÑÑÑÐ¾ÑÐ½Ð¸Ñ Ð¸ÑÑÐ¾ÑÐ½Ð¸Ðº-Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ° Ð¸ ÑÐ³Ð»Ñ Ð¼ÐµÐ¶Ð´Ñ Ð¾ÑÑÑ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ° Ð¸ Ð²ÐµÑÑÐ¸ÐºÐ°Ð»ÑÐ½Ð¾Ð¹ Ð¾ÑÐ¸) Ð½Ð° Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÑ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ñ. ÐÐ°Ð´Ð°ÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐµÑÐ°Ð»Ð¸ÑÑ Ð² ÑÐ¾Ð´Ðµ ÑÐ°Ð±Ð¾ÑÑ: 1. ÐÐ·ÑÑÐµÐ½Ð¸Ðµ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐµÐ¹ ÑÐ¾ÑÑÐ° III-N ÑÑÑÑÐºÑÑÑ Ð¼ÐµÑÐ¾Ð´Ð°Ð¼Ð¸ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸; 2. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ¾Ð»Ð¸ Ð±ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð¾ÐµÐ² Ð² Ð¿ÑÐ¸Ð±Ð¾ÑÐ°Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð´Ð°Ð½Ð½ÑÑ ÑÐ¾ÐµÐ´Ð¸Ð½ÐµÐ½Ð¸Ð¹; 3. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐ¾ÑÑÐ¾Ð²Ð¾Ð¹ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ð¸ Ð½Ð° Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÑ ÑÐ»Ð¾ÐµÐ², Ð¿Ð¾Ð»ÑÑÐ°ÐµÐ¼ÑÑ Ð¼ÐµÑÐ¾Ð´Ð°Ð¼Ð¸ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸; 4. ÐÐ¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ ÑÐ¾ÑÑÐ¾Ð²Ð¾Ð¹ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ð¸ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ð°Ð½Ð¸Ð¸ ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¾Ð¶Ð¸Ð´Ð°Ð½Ð¸Ñ. Ð Ð°Ð±Ð¾ÑÐ° Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð° Ð½Ð° Ð±Ð°Ð·Ðµ ÐÑÐ¸ÐºÐ»Ð°Ð´Ð½Ð¾Ð¹ Ð»Ð°Ð±Ð¾ÑÐ°ÑÐ¾ÑÐ¸Ð¸ ÐÐÐ Â«ÐÐ¢ÐÂ». Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð±ÑÐ»Ð¸ Ð¿ÑÐ¾Ð°Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ñ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ°ÐºÑÐ¾ÑÑ ÑÐ¾ÑÑÐ° ÑÑÑÑÐºÑÑÑ, ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¸ ÑÐ¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½ Ð¼Ð°ÑÐµÐ¼Ð°ÑÐ¸ÑÐµÑÐºÐ¸Ð¹ Ð°Ð¿Ð¿Ð°ÑÐ°Ñ ÑÐ°ÑÑÐµÑÐ° Ð¿ÑÐ¾ÑÐ¸Ð»Ñ ÑÐ°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð¾ÑÐ°Ð¶Ð´Ð°ÐµÐ¼Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ Ð¿Ð¾ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ Ð¸ Ð¿Ð¾Ð»ÑÑÐ°ÐµÐ¼Ð¾Ð¹ Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÐ¸. ÐÐ° Ð¾ÑÐ½Ð¾Ð²Ð°Ð½Ð¸Ð¸ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð½ÑÑ ÑÐ°ÑÑÐµÑÐ¾Ð² Ð±ÑÐ»Ð° Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð° ÑÐ¾ÑÑÐ¾Ð²Ð°Ñ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ñ Ð´Ð°Ð½Ð½Ð¾Ð¹ Ð»Ð°Ð±Ð¾ÑÐ°ÑÐ¾ÑÐ½Ð¾Ð¹ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸.
description: The current work is dedicated to the study of the growth conditions of buffer layers within III-N structures and the influence of the source-substrate distance on the uniformity of epitaxial layers. The following goals were set for this research: 1. Study of the unique features of group III nitrides by MBE methods; 2. Study of the role of buffer layers in devices based on III-N; 3. Study of the influence of the growth geometry on the uniformity of the deposited layers; 4. Growth geometry optimization based on theoretical expectations. The work was carried out at the âSemiTEqâ Application laboratory. As a result, the geometrical factors of the growth have been analyzed, the mathematical apparatus for calculating the profile of the distribution of the thickness of grown layers over the substrate and the resulting uniformity has been developed. The growth geometry of the laboratory set-up has been optimized based on the calculations performed.