title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¿ÑÐ¾ÑÐ²Ð»ÐµÐ½Ð¸Ñ ÑÐ¿Ð¸Ð½Ð¾Ð²Ð¾Ð³Ð¾ Ð²Ð·Ð°Ð¸Ð¼Ð¾Ð´ÐµÐ¹ÑÑÐ²Ð¸Ñ Ð² Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð¸Ð¸ Ð°Ð¼Ð¿Ð»Ð¸ÑÑÐ´Ñ ÑÐ¸Ð³Ð½Ð°Ð»Ð° Ð­ÐÐ Ð¸ g-ÑÐ°ÐºÑÐ¾ÑÐ° Ð½Ð° Ð¿ÑÐ¸Ð¼ÐµÑÐµ Ge:As(Ga)
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Research of the manifestation of spin interaction in the anisotropy of the ESR signal amplitude and g-factor on the example of Ge:As(Ga)
Creators: name: ÐÐ»Ð¾ÑÐ½Ð¸ÐºÐ¾Ð², ÐÐ°ÑÐ¸Ð»Ð¸Ð¹
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¹ Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÐ¹ ÑÐµÐ·Ð¾Ð½Ð°Ð½Ñ
Ð³ÐµÑÐ¼Ð°Ð½Ð¸Ð¹
Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð¸Ñ
g-ÑÐ°ÐºÑÐ¾Ñ
ÑÐ¸ÑÐ¸Ð½Ð° Ð»Ð¸Ð½Ð¸Ð¸ Ð­ÐÐ
Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð°Ñ Ð²Ð¾ÑÐ¿ÑÐ¸Ð¸Ð¼ÑÐ¸Ð²Ð¾ÑÑÑ
Ð½Ð¸Ð·ÐºÐ¸Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ
ÑÐ°Ð·Ð¾Ð²ÑÐ¹ Ð¿ÐµÑÐµÑ Ð¾Ð´
electronic spin resonsnce
germanium
anisotropy
g-factor
linewidth
magnetic susceptibility
low temperatures
phase transition

description: ÐÐ±ÑÐµÐºÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ â Ð´Ð²Ð° Ð¾Ð±ÑÐ°Ð·ÑÐ° Ge:As(Ga) Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½Ð¾Ð¹ ÑÑÐµÐ¿ÐµÐ½ÑÑ ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ°ÑÐ¸Ð¸ Ð¸ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸ÐµÐ¹ Ð²Ð±Ð»Ð¸Ð·Ð¸ ÑÐ°Ð·Ð¾Ð²Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÑÐ¾Ð´Ð° Ð¸Ð·Ð¾Ð»ÑÑÐ¾Ñ-Ð¼ÐµÑÐ°Ð»Ð». Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð¸Ð¸ ÑÐ²Ð¾Ð¹ÑÑÐ² ÑÐ¸Ð»ÑÐ½Ð¾ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ge:As Ð¿ÑÐ¸ Ð½Ð¸Ð·ÐºÐ¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¿ÑÐ¾ÑÐ²Ð»ÐµÐ½Ð¸Ñ ÑÐ¿Ð¸Ð½Ð¾Ð²Ð¾Ð³Ð¾ Ð²Ð·Ð°Ð¸Ð¼Ð¾Ð´ÐµÐ¹ÑÑÐ²Ð¸Ñ Ð² Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð¸Ð¸ Ð°Ð¼Ð¿Ð»Ð¸ÑÑÐ´Ñ ÑÐ¸Ð³Ð½Ð°Ð»Ð° Ð­ÐÐ  Ð¸ g-ÑÐ°ÐºÑÐ¾ÑÐ° Ð½Ð° Ð¿ÑÐ¸Ð¼ÐµÑÐµ Ge:As(Ga) Ð±ÑÐ» Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½ Ð¿Ð¾Ð¸ÑÐº Ð¸Ð½ÑÐ¾ÑÐ¼Ð°ÑÐ¸Ð¸ Ð² Ð³Ð»Ð¾Ð±Ð°Ð»ÑÐ½ÑÑ ÐºÐ¾Ð¼Ð¿ÑÑÑÐµÑÐ½ÑÑ ÑÐµÑÑÑ, Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÑÐ³Ð»Ð¾Ð²ÑÐµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ g-ÑÐ°ÐºÑÐ¾ÑÐ° Ð¸ ÑÐ¸ÑÐ¸Ð½Ñ Ð»Ð¸Ð½Ð¸Ð¸ Ð­ÐÐ  Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÐµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ð¹ Ð²Ð¾ÑÐ¿ÑÐ¸Ð¸Ð¼ÑÐ¸Ð²Ð¾ÑÑÐ¸ Ð´Ð»Ñ Ð´Ð²ÑÑ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² ÑÐ¸Ð»ÑÐ½Ð¾ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ge:As. ÐÑÐ»Ð° Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð° Ð¿ÑÐ¸ÐºÐ»Ð°Ð´Ð½Ð°Ñ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð° OriginLab Pro Ð´Ð»Ñ Ð°Ð½Ð°Ð»Ð¸Ð·Ð° Ð´Ð°Ð½Ð½ÑÑ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð³Ð¾ Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ð³Ð¾ ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ°. ÐÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ð³Ð¾ Ð¿Ð¾ÑÑÐ´ÐºÐ° Ð½Ð° Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð¸Ñ ÑÐ¸Ð³Ð½Ð°Ð»Ð° Ð­ÐÐ  Ð¸ g-ÑÐ°ÐºÑÐ¾ÑÐ°. Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ ÑÐ¾Ð³Ð»Ð°ÑÑÑÑÑÑ Ñ Ð¿ÑÐµÐ´ÑÐ´ÑÑÐ¸Ð¼Ð¸ Ð­ÐÐ  Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸ÑÐ¼Ð¸ ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ge:As.
description: Object of research: two samples of Ge dropped As with different degrees of compensation and concentration near the metal-insulator phase transition. Objective: study the anisotropy properties of high compensated Ge:As at low temperatures. As a result of the research of the manifestation of spin interaction in the anisotropy of the ESR signal amplitude and g-factor on the example of Ge:As(Ga), the information was searched in global computer networks. Angular dependence of the g-factor and ESR linewidth at different temperatures, as well as temperature dependences of magnetic susceptibility for two samples of strongly compensated Ge:As were obtained. OriginLab Pro application program was used to analyze the data obtained by electron paramagnetic resonance. The effect of changing the magnetic order on the anisotropy of the ESR signal and g-factor was determined. The results are in agreement with previous ESR studies of compensated Ge:As.