title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² ÐºÐµÑÐ°Ð¼Ð¸Ðº Ð¾ÐºÑÐ¸Ð´Ð° Ð½Ð¸Ð¾Ð±Ð¸Ñ Nb2O5 Ð¸ Ð³Ð°ÑÐ½Ð¸Ñ HfO2
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Investigation of electrical properties of niobium and hafnium oxides ceramics
Creators: name: ÐÐ°ÑÑÐº, Ð¢Ð°ÑÑÑÐ½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2019
Subjects: Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÐºÐ¸
high-k Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ñ
Ð¿ÐµÐ½ÑÐ¾ÐºÑÐ¸Ð´ Ð½Ð¸Ð¾Ð±Ð¸Ñ
Ð´Ð¸Ð¾ÐºÑÐ¸Ð´ Ð³Ð°ÑÐ½Ð¸Ñ
Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ°Ñ Ð¿ÑÐ¾Ð½Ð¸ÑÐ°ÐµÐ¼Ð¾ÑÑÑ
Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÑ
ÑÐµÐ»Ð°ÐºÑÐ°ÑÐ¸Ð¾Ð½Ð½ÑÐµ Ð¿ÑÐ¾ÑÐµÑÑÑ
dielectrics
high-k materials
niobium pentoxide
hafnium dioxide
permittivity
relaxation processes

description: Ð ÑÐ°Ð±Ð¾ÑÐµ Ð±ÑÐ»Ð¸ Ð¸Ð·ÑÑÐµÐ½Ñ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½ÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð² Ð´Ð»Ñ ÑÐ¾-Ð²ÑÐµÐ¼ÐµÐ½Ð½Ð¾Ð¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸: ÐºÐµÑÐ°Ð¼Ð¸Ðº Nb2O5 Ð¸ HfO2, Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÑ Ð² ÐÐ½Ð´Ð¸Ð¹ÑÐºÐ¾Ð¼ Ð¸Ð½ÑÑÐ¸ÑÑÑÐµ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¹ (IIT Madras) Ð² ÑÐ¸ÑÐ¾ÐºÐ¾Ð¼ ÑÐ°ÑÑÐ¾ÑÐ½Ð¾Ð¼ (1ÐÑ-10 ÐÐÑ) Ð¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð¼ (300-670Ð) Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð°Ñ. Ð£ÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ° Ð¸ ÑÐµÑÐ¼Ð¸ÑÐµÑÐºÐ¾Ð¹ Ð¸ÑÑÐ¾ÑÐ¸Ð¸ Ð½Ð° ÐºÐµ-ÑÐ°Ð¼Ð¸ÐºÑ Ð¾ÐºÑÐ¸Ð´Ð° Ð½Ð¸Ð¾Ð±Ð¸Ñ Ð¸ Ð¾ÑÑÑÑÑÑÐ²Ð¸Ðµ Ð´Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð½Ð° ÐºÐµÑÐ°Ð¼Ð¸ÐºÑ Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°ÑÐ½Ð¸Ñ. ÐÑÑÐ²-Ð»ÐµÐ½ ÑÐµÑÐ¼Ð¾Ð°ÐºÑÐ¸Ð²Ð°ÑÐ¸Ð¾Ð½Ð½ÑÐ¹ ÑÐ°ÑÐ°ÐºÑÐµÑ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ Ñ ÐÐ°=660Ð¼ÑÐ, Ð¾Ð±ÑÑÐ»Ð¾Ð²Ð»ÐµÐ½Ð½ÑÐ¹ ÐºÐ¸ÑÐ»Ð¾-ÑÐ¾Ð´Ð½ÑÐ¼Ð¸ Ð²Ð°ÐºÐ°Ð½ÑÐ¸ÑÐ¼Ð¸. ÐÐ±Ð½Ð°ÑÑÐ¶ÐµÐ½Ñ Ð´Ð²Ð° ÑÐµÐ»Ð°ÐºÑÐ°ÑÐ¸Ð¾Ð½Ð½ÑÑ Ð¿ÑÐ¾ÑÐµÑÑÐ° Ð´Ð»Ñ Nb2O5 Ð¸ ÑÑÐ¸ Ð¿ÑÐ¾-ÑÐµÑÑÐ° Ð´Ð»Ñ HfO2, Ð¾ÑÐ²ÐµÑÑÑÐ²ÐµÐ½Ð½ÑÐµ Ð·Ð° Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¾ÑÐºÐ»Ð¸ÐºÐ¸ Ð´Ð°Ð½Ð½ÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð². Ð Nb2O5 Ð½Ð¸Ð·ÐºÐ¾ÑÐ°ÑÑÐ¾ÑÐ½ÑÐ¹ Ð¿ÑÐ¾ÑÐµÑÑ, ÑÐ²ÑÐ·Ð°Ð½Ð½ÑÐ¹ Ñ Ð½ÐµÐ¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÑÑ ÐºÐµÑÐ°Ð¼Ð¸ÐºÐ¸, Ð²Ð½Ð¾ÑÐ¸Ñ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÑÑÑÐ¸Ð¹ Ð²ÐºÐ»Ð°Ð´ Ð² Ð¾ÑÐºÐ»Ð¸Ðº, Ð° Ð²ÑÑÐ¾ÐºÐ¾ÑÐ°ÑÑÐ¾ÑÐ½ÑÐ¹ Ð¸Ð¼ÐµÐµÑ ÑÐµÑÐ¼Ð¾Ð°ÐºÑÐ¸Ð²Ð°ÑÐ¸Ð¾Ð½Ð½ÑÐ¹ ÑÐ°ÑÐ°ÐºÑÐµÑ (Ñ Ï0~10-13Ñ Ð¸ ÑÐ½ÐµÑÐ³Ð¸ÐµÐ¹ Ð°ÐºÑÐ¸Ð²Ð°ÑÐ¸Ð¸ 870Ð¼ÑÐ). Ð HfO2 Ð²ÑÐ´ÐµÐ»ÐµÐ½ Ð²ÑÑÐ¾ÐºÐ¾ÑÐ°ÑÑÐ¾ÑÐ½ÑÐ¹ Ð¿ÑÐ¾ÑÐµÑÑ, Ð²Ð½Ð¾ÑÑÑÐ¸Ð¹ Ð¾ÑÐ½Ð¾Ð²Ð½Ð¾Ð¹ Ð²ÐºÐ»Ð°Ð´ Ð² Ð¾ÑÐºÐ»Ð¸Ðº, Ð¿ÑÐ¸ Ð½Ð¸Ð·ÐºÐ¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ (Ð´Ð¾ 450Ð) Ð¸ Ð¸Ð¼ÐµÑÑÐ¸Ð¹ ÑÐµÑ-Ð¼Ð¾Ð°ÐºÑÐ¸Ð²Ð°ÑÐ¸Ð¾Ð½Ð½ÑÐ¹ ÑÐ°ÑÐ°ÐºÑÐµÑ (Ñ Ï0~10-13Ñ Ð¸ ÐÐ°=1,16ÑÐ).
description: In the work, the electrical properties of promising materials for modern electronics: Nb2O5 and HfO2 ceramics, grown at the Indian Institute of Technology (IIT Madras), were searched in the wide frequency range (1 Hz-10 MHz) and temperature (300-670 K). The influ-ence of experimental conditions and thermal history on ceramics of niobium oxide and the ab-sence of this effect on ceramics of hafnium oxide are established. Two relaxation processes for and three processes for responsible for the dielectric responses of these materials were discov-ered. In Nb2O5, the low-frequency process (with characteristic times of 0.45 s) associated with the inhomogeneous conductivity of ceramics makes a decisive contribution to the response, and the high-frequency one has a thermo-activation character (with Ï0 ~ 10-13 s and an activation energy of 870 meV). In HfO2, a high-frequency process contributing to the response at low temperatures (Ð¢&lt; 450K) and having a thermo-activation character (with Ï0 ~ 10-13s and Ea = 1.16 eV) is highlighted, the nature of the other two processes (low-frequency, contributing at high temperatures, and weak high-frequency with Ï0 ~ 10-21s) has not yet been clarified.