Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
Creators: name: Snoeys, Walter
name: Aglieri Rinella, Gianluca
name: Andronic, Anton
name: Antonelli, Matias
name: Baccomi, Roberto
name: Ballabriga Sune, Rafael
name: Barbero, Marlon
name: Barrillon, Pierre
name: Baudot, Jerome
name: Becht, Pascal
name: Benotto, Franco
name: Beolé, Stefania
name: Bertolone, Gregory
name: Besson, Auguste
name: Bialas, Wojciech
name: Borghello, Giulio
name: Braach, Justus
name: Buckland, Matthew Daniel
name: Bugiel, Szymon
name: Buschmann, Eric
name: Camerini, Paolo
name: Campbell, Michael
name: Carnesecchi, Francesca
name: Cecconi, Leonardo
name: Charbon, Edoardo
name: Chauhan, Ankur
name: Colledani, Claude
name: Contin, Giacomo
name: Dannheim, Dominik
name: Dort, Katharina
name: De Melo, João Pacheco
name: Deng, Wenjing
name: De Robertis, Giuseppe
name: Di Mauro, Antonio
name: Dorda Martin, Ana
name: Dorokhov, Andrei
name: Dorosz, Piotr
name: Eberwein, Gregor
name: El Bitar, Ziad
name: Fang, Xiaochao
name: Fenigstein, Amos
name: Ferrero, Chiara
name: Fougeron, Denis
name: Gajanana, Deepak
name: Goffe, Mathieu
name: Gonella, Laura
name: Grelli, Alessandro
name: Gromov, Vladimir
name: Habib, Alexandre
name: Haim, Adi
name: Hansen, Karsten
name: Hasenbichler, Jan
name: Hillemanns, Hartmut
name: Hong, Geun Hee
name: Hu, Christine
name: Isakov, Artem
name: Jaaskelainen, Kimmo
name: Junique, Antoine
name: Kotliarov, Artem
name: Kremastiotis, Iraklis
name: Krizek, Filip
name: Kluge, Alexander
name: Kluit, Ruud
name: Kucharska, Gabriela
name: Kugathasan, Thanushan
name: Kwon, Youngil
name: La Rocca, Paola
name: Lautner, Lukas
name: Leitao, Pedro Vicente
name: Lim, Bong-Hwi
name: Loddo, Flavio
name: Mager, Magnus
name: Marras, Davide
name: Martinengo, Paolo
name: Masciocchi, Silvia
name: Mathew, Soniya
name: Menzel, Marius Wilm
name: Morel, Frederic
name: Mulyanto, Budi
name: Münker, Magdalena
name: Musa, Luciano
name: Nakamura, Masayuki
name: Pangaud, Patrick
name: Perciballi, Stefania
name: Pham, Hung
name: Piro, Francesco
name: Prino, Francesco
name: Rachevski, Sasha
name: Rebane, Karolina
name: Reckleben, Christian
name: Reidt, Felix
name: Ricci, Riccardo
name: Russo, Roberto
name: Sanna, Isabella
name: Sarritzu, Valerio
name: Savino, Umberto
name: Schledewitz, David
name: Sedgwick, Iain
name: Soltveit, Hans Kristian
name: Senyukov, Serhiy
name: Sonneveld, Jory
name: Soudier, Jean
name: Stachel, Johanna
name: Suzuki, Masakatsu
name: Svihra, Peter
name: Suljic, Miljenko
name: Takahashi, Nobuyoshi
name: Termo, Gennaro
name: Tiltmann, Nicolas
name: Toledano, Elie
name: Triffiro, Antonio
name: Turcato, Andrea
name: Usai, Gianluca
name: Valin, Isabella
name: Villani, Anna
name: Van Beelen, Jacob Bastiaan
name: Vassilev, Mirella Dimitrova
name: Vernieri, Caterina
name: Vitkovskiy, Arseniy
name: Wu, Yitao
name: Yelkenci, Asli
name: Yuncu, Alperen
Publisher: name: Scuola Internazionale Superiore di Studi Avanzati (SISSA)
Year: 2023

description: The long term goal of the CERN Experimental Physics Department R&amp;D on monolithic sensors is the development of sub-100nm CMOS sensors for high energy physics. The first technology selected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 included several small test chips with sensor and circuit prototypes and transistor test structures. One of the main questions to be addressed was how to optimize the sensor in the presence of significant in-pixel circuitry. In this paper this optimization is described as well as the experimental results from the MLR1 run confirming its effectiveness. A second submission investigating wafer-scale stitching has just been completed. This work has been carried out in strong synergy with the ITS3 upgrade of the ALICE experiment.