title: ÐÐ¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ½ÑÐµ ÑÐ²Ð»ÐµÐ½Ð¸Ñ Ð¿ÑÐ¸ Ð¸Ð¾Ð½Ð½Ð¾Ð¼ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¸ Î±-Ga2O3
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Surface phenomena at ion irradiation of Î±-Ga2O3
Creators: name: Ð¤ÐµÐ´Ð¾ÑÐµÐ½ÐºÐ¾, ÐÐ»Ð¸Ð·Ð°Ð²ÐµÑÐ°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð¾ÐºÑÐ¸Ð´ Ð³Ð°Ð»Ð»Ð¸Ñ
Î±-Ga2O3
Ð¸Ð¾Ð½Ð½Ð°Ñ Ð±Ð¾Ð¼Ð±Ð°ÑÐ´Ð¸ÑÐ¾Ð²ÐºÐ°
Ð°ÑÐ¾Ð¼Ð½Ð¾-ÑÐ¸Ð»Ð¾Ð²Ð°Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
ÑÐµÐ½ÑÐ³ÐµÐ½Ð¾Ð²ÑÐºÐ°Ñ ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð°Ñ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ ÑÐµÐ·ÐµÑÑÐ¾ÑÐ´Ð¾Ð²ÑÐºÐ¾Ð³Ð¾ Ð¾Ð±ÑÐ°ÑÐ½Ð¾Ð³Ð¾ ÑÐ°ÑÑÐµÑÐ½Ð¸Ñ
gallium oxide
ion bombardment
atomic force microscopy
sensitive photoelectron spectroscopy
Rutherford backscattering spectroscopy

description: ÐÐ±ÑÐµÐºÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ: ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐµ Ð¿Ð»ÐµÐ½ÐºÐ¸ Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ð½Ð° ÑÐ°Ð¿ÑÐ¸ÑÐ¾Ð²Ð¾Ð¹ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ. Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ: Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ðµ Ð¸Ð½ÑÐ¾ÑÐ¼Ð°ÑÐ¸Ð¸ Ð¾ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½ÑÑ ÑÐ²Ð»ÐµÐ½Ð¸ÑÑ Ð¿ÑÐ¸ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¸ Î±-Ga2O3 ÑÑÐºÐ¾ÑÐµÐ½Ð½ÑÐ¼Ð¸ Ð¸Ð¾Ð½Ð°Ð¼Ð¸. Ð Ð°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½ÑÑ ÑÐ²Ð»ÐµÐ½Ð¸Ð¹ Ð¿ÑÐ¸ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¸ Î±-Ga2O3 ÑÑÐºÐ¾ÑÐµÐ½Ð½ÑÐ¼Ð¸ Ð¸Ð¾Ð½Ð°Ð¼Ð¸ P, PF4 Ð¸ Ta Ñ Ð´Ð¾Ð·Ð°Ð¼Ð¸ 30 Ð¸ 45 DPA. ÐÑÐµÐ½ÐºÐ° Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð¿ÑÐ¸ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¸ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² Ð±ÑÐ»Ð° Ð²ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ð° Ð² Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½Ð¾Ð¼ ÐºÐ¾Ð¼Ð¿Ð»ÐµÐºÑÐµ Comsol Multiphysics. ÐÑÐ¸ Ð¿Ð¾Ð¼Ð¾ÑÐ¸ RUMP Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¾ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ¿ÐµÐºÑÑÐ¾Ð² Ð¾Ð±ÑÐ°ÑÐ½Ð¾Ð³Ð¾ ÑÐ°ÑÑÐµÑÐ½Ð¸Ñ Ð¾Ñ Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ð´Ð»Ñ ÑÐ»ÑÑÐ°Ð¹Ð½Ð¾Ð³Ð¾ Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ. Ð Ð°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ Ð²Ð½ÐµÐ´ÑÑÐµÐ¼ÑÑ Ð¸Ð¾Ð½Ð¾Ð² Ð¢Ð° Ð¸ Ð¾ÑÐµÐ½ÐµÐ½Ð° Ð¸Ñ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ñ Ð²ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ñ Ð² TRIM. Ð£ÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¾, ÑÑÐ¾ Ð½Ð°Ð³ÑÐµÐ² Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð¸Ð¾Ð½Ð½ÑÐ¼ Ð¿ÑÑÐºÐ¾Ð¼ Ð½Ðµ Ð¿ÑÐµÐ²ÑÑÐ°ÐµÑ 4.5 Ð. ÐÑÐ¸ Ð±Ð¾Ð¼Ð±Ð°ÑÐ´Ð¸ÑÐ¾Ð²ÐºÐµ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ°Ñ ÑÑÑÑÐºÑÑÑÐ° ÑÐ°Ð·ÑÑÑÐ°ÐµÑÑÑ Ð¸ Ð¾Ð±ÑÐ°Ð·ÑÐµÑÑÑ ÑÐ°Ð·ÑÐ¿Ð¾ÑÑÐ´Ð¾ÑÐµÐ½Ð½ÑÐ¹ ÑÐ»Ð¾Ð¹. ÐÐ¿Ð»Ð¾ÑÑ Ð´Ð¾ Ð´Ð¾Ð· 30 DPA ÑÐ¾Ð»ÑÐ¸Ð½Ð° ÑÐ»Ð¾Ñ Ð½Ðµ Ð¸Ð·Ð¼ÐµÐ½ÑÐµÑÑÑ, Ð½ÐµÑÐ¼Ð¾ÑÑÑ Ð½Ð° Ð¾ÑÑÑÐ¸Ð¼ÑÐµ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ ÑÑÑÑÐºÑÑÑÑ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸. ÐÑ 30 Ð´Ð¾ 45 DPA Ð½Ð°Ð±Ð»ÑÐ´Ð°ÐµÑÑÑ ÑÐ²ÐµÐ»Ð»Ð¸Ð½Ð³ Ð¾Ð±Ð»ÑÑÐ°ÐµÐ¼Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÐ¸ Ð¸ Ð¾Ð±ÑÐ°Ð·ÑÐµÑÑÑ ÑÑÑÐ¿ÐµÐ½ÑÐºÐ° Ð²ÑÑÐ¾ÑÐ¾Ð¹ ~5Ð½Ð¼.
description: The subject of the graduate qualification work is epitaxial films of gallium oxide on a sapphire substrate irradiated with accelerated atomic and molecular ions. The given work is devoted to study of surface phenomena during ion irradiation of Î±-Ga2O3. The work is devoted to the study of surface phenomena during irradiation of Î±-Ga2O3 with accelerated P, PF4 and Ta ions with doses of 30 and 45 DPA. The temperature change during the irradiation of the sample surface was estimated using the Comsol Multiphysics software package. With the help of RUMP, backscattering spectra from gallium oxide were simulated for a random direction. The distribution of introduced Ta ions and their concentration were estimated using TRIM. It has been found that surface heating by an ion beam does not exceed 4.5 K. During bombardment, the crystal structure is destroyed and a isordered layer is formed. Up to doses of 30 DPA, the layer thickness does not change, despite noticeable changes in the surface structure. From 30 to 45 DPA, swelling of the irradiated region is observed and a step ~5 nm high is formed.