title: ÐÐ¾Ð»ÑÑÐµÐ½Ð¸Ðµ Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸ Ð¸Ð· Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐ¾ÐµÐ´Ð¸Ð½ÐµÐ½Ð¸Ð¹, Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ° Ð¾Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¿ÑÐ¾ÑÐµÑÑÐ°
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: The growth of Gallium Oxide by the method of metalorganic epitaxy, research of the dependence of the growth rate on process parameters
Creators: name: ÐÐ²Ð°Ð½Ð¾Ð², ÐÐ»Ð°Ð´Ð¸Ð¼Ð¸Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2022
Subjects: ÐÐ°Ð»Ð»Ð¸Ð¹
ÐÐºÐ¸ÑÐ»Ñ
ÐÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ðµ ÑÐ¾ÐµÐ´Ð¸Ð½ÐµÐ½Ð¸Ñ
ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð¾ÐºÑÐ¸Ð´ Ð³Ð°Ð»Ð»Ð¸Ñ
Ð¼Ð¾ÑÐ³ÑÑ
Ð³Ð°Ð·Ð¾ÑÐ°Ð·Ð½Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
epitaxy
gallium oxide
movpe
vapor phase epitaxy

description: Ð¢ÐµÐ¼Ð° Ð²ÑÐ¿ÑÑÐºÐ½Ð¾Ð¹ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ: Â«ÐÐ¾Ð»ÑÑÐµÐ½Ð¸Ðµ Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸ Ð¸Ð· Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐ¾ÐµÐ´Ð¸Ð½ÐµÐ½Ð¸Ð¹, Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ° Ð¾Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¿ÑÐ¾ÑÐµÑÑÐ°Â». ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¼ÐµÑÐ¾Ð´Ð¸ÐºÐ¸ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½Ð¾Ð³Ð¾ ÑÐ¾ÑÑÐ° Ga2O3 Ð½Ð° Ð³Ð»ÑÐ±Ð¾ÐºÐ¾ Ð¼Ð¾Ð´ÐµÑÐ½Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð¹ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ Epiquip Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÐÐÐ¡ÐÐ¤Ð­, Ð¿Ð¾Ð¸ÑÐºÑ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÑ ÑÐ¾ÑÑÐ¾Ð²ÑÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ° Ð¾Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¿ÑÐ¾ÑÐµÑÑÐ°. ÐÐ°Ð´Ð°ÑÐ¸, ÑÐµÑÐ°ÐµÐ¼ÑÐµ Ð² ÑÐ¾Ð´Ðµ ÑÐ°Ð±Ð¾ÑÑ: Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ ÑÐ¾ÑÑÐ¾Ð²ÑÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ Ñ ÑÐµÐ»ÑÑ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐ»Ð¾ÐµÐ² Î²-Ga2O3; Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ ÑÑÐ´Ð° ÑÐ¾ÑÑÐ¾Ð²ÑÑ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² Ñ ÑÐµÐ»ÑÑ ÑÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¸Ñ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ° Ð¾Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¿ÑÐ¾ÑÐµÑÑÐ°; Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ ÑÑÐ´Ð° Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² Ð¿Ð¾ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ñ Ð¼ÐµÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð³Ð°Ð»Ð»Ð¸Ñ Ð´Ð»Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð¹ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ñ; ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ Ð²ÑÐµÑ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð² Ñ ÑÐ¾ÑÑÐ¾Ð¼ GaN Ð² Ð°Ð½Ð°Ð»Ð¾Ð³Ð¸ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ Ñ Ð¿Ð¾ÑÐ»ÐµÐ´ÑÑÑÐ¸Ð¼Ð¸ Ð²ÑÐ²Ð¾Ð´Ð°Ð¼Ð¸ Ð¾Ð± ÑÐ½ÐµÑÐ³Ð¸ÑÑ Ð°ÐºÑÐ¸Ð²Ð°ÑÐ¸Ð¸.Â ÐÐ° Ð¿ÐµÑÐ²Ð¾Ð¼ ÑÑÐ°Ð¿Ðµ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ Ð¾Ð±ÑÐ°Ð·ÑÑ Ñ Ð²ÑÑÐ¾ÐºÐ¸Ð¼ ÑÐ¾Ð´ÐµÑÐ¶Ð°Ð½Ð¸ÐµÐ¼ ÑÐ³Ð»ÐµÑÐ¾Ð´Ð°, Ð²ÑÐ´ÐµÐ»ÑÐ²ÑÐµÐ³Ð¾ÑÑ Ð¿ÑÐ¸ Ð¿Ð¸ÑÐ¾Ð»Ð¸Ð·Ðµ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÐºÐ¸. ÐÐ»Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ ÑÐ¸ÑÑÑÑ ÑÐ»Ð¾ÐµÐ² Î²-Ga2O3 Ð±ÑÐ»Ð¾ Ð¿ÑÐ¸Ð½ÑÑÐ¾ ÑÐµÑÐµÐ½Ð¸Ðµ Ð¾Ð± ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ð¸ Ð¿Ð¾ÑÐ¾ÐºÐ° ÐºÐ¸ÑÐ»Ð¾ÑÐ¾Ð´Ð° Ð¿Ð¾ Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸Ñ Ðº Ð¿Ð¾ÑÐ¾ÐºÑ Ð³Ð°Ð»Ð»Ð¸Ñ. ÐÐ¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÐ¼ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸ÐµÐ¼ Ð¼Ð¾Ð»ÑÐ½ÑÑ Ð¿Ð¾ÑÐ¾ÐºÐ¾Ð² Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ¾Ð² Ð¾ÐºÐ°Ð·Ð°Ð»Ð¾ÑÑ O/Ga = 4ê103. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ ÑÑÐ´Ð° Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² Ð¿Ð¾ Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ° Ð¸ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ñ Ð±ÑÐ»Ð¸ ÑÐ´ÐµÐ»Ð°Ð½Ñ Ð²ÑÐ²Ð¾Ð´Ñ Ð¾Ð± Ð°ÐºÑÐ¸Ð²Ð°ÑÐ¸Ð¾Ð½Ð½ÑÑ Ð¿ÑÐ¾ÑÐµÑÑÐ°Ñ, Ð²ÑÑÐ¸ÑÐ»ÐµÐ½Ñ ÑÐ½ÐµÑÐ³Ð¸Ð¸ Ð°ÐºÑÐ¸Ð²Ð°ÑÐ¸Ð¸. Ð­ÑÐ¸ Ð´Ð°Ð½Ð½ÑÐµ Ð¼Ð¾Ð³ÑÑ Ð±ÑÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ñ Ð´Ð»Ñ Ð´Ð°Ð»ÑÐ½ÐµÐ¹ÑÐ¸Ñ ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ°ÑÑÐµÑÐ¾Ð² ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð², Ð¿ÑÐ¾Ð¸ÑÑÐ¾Ð´ÑÑÐ¸Ñ Ð²Ð¾ Ð²ÑÐµÐ¼Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸ Ga2O3.
description: The subject of the graduate qualification work is Â«The growth of Gallium Oxide by the method of metalorganic epitaxy, research of the dependence of the growth rate on process parametersÂ». The given work is devoted to the study of the method of epitaxial growth of Ga2O3 on a deeply modernized Epiquip installation by the MOCVD method, the search for optimal growth conditions, and the study of the dependence of the growth rate on various process parameters. The following tasks were solved in the course of the study: optimization of growth conditions in order to obtain crystalline layers of Î²-Ga2O3; carrying out a number of growth processes in order to study the dependence of the growth rate on various process parameters; carrying out a number of processes for the deposition of metallic gallium to obtain the temperature dependence of the deposition rate; comparison of all results with the growth of GaN in the same conditions with subsequent conclusions about the activation energies.At the first stage of the work, samples with a high carbon concentration released during the pyrolysis of metalorganics were obtained. To obtain pure Î²-Ga2O3 layers, it was decided to increase the oxygen flux relative to the gallium flux. It turned out that the optimal ratio of the molar fluxes of the sources is O/Ga = 4ê103. As a result of several processes to study the rate of growth and deposition, conclusions were made about activation processes and the activation energies were calculated. These data can be used for further theoretical calculations of chemical processes occurring during Ga2O3 epitaxy.