title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ Ð¸ ÑÐ»ÐµÐºÑÑÐ¾ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² InGaN/GaN Ð½Ð°Ð½Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÑ Ð¼ÐµÐ·Ð°ÑÑÑÑÐºÑÑÑ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð²ÑÑÐ¾ÐºÐ¾ÑÑÑÐµÐºÑÐ¸Ð²Ð½ÑÑ ÑÐ²ÐµÑÐ¾Ð´Ð¸Ð¾Ð´Ð¾Ð²
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Research optical and electrophysical properties of InGaN / GaN nanorod structures for the creation of highly efficient LEDs
Creators: name: ÐÐµÐ½Ð·ÐµÐ»Ð¸Ð½ÑÐµÐ², ÐÐ»ÐµÐºÑÐ°Ð½Ð´Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: ÐÐ°Ð½Ð¾ÑÑÑÑÐºÑÑÑÐ½ÑÐµ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ñ
Ð½Ð°Ð½Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÐµ Ð¼ÐµÐ·Ð°ÑÑÑÑÐºÑÑÑÑ
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Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ

description: ÐÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸ÑÐ¼ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ð¼Ð°ÑÑÐ¸Ð²Ð° Ð½Ð°Ð½Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÑ InGaN/GaN Ð¼ÐµÐ·Ð°ÑÑÑÑÐºÑÑÑ Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¸Ñ Ð¾Ð¿ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÑ ÑÐ²Ð¾Ð¹ÑÑÐ². Ð ÑÐ¾Ð´Ðµ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ ÑÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ñ Ð¼Ð°ÑÑÐ¸Ð²Ñ Ð½Ð°Ð½Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÑ Ð¼ÐµÐ·Ð°ÑÑÑÑÐºÑÑÑ InGaN/GaN Ð²ÑÑÐ¾ÑÐ¾Ð¹ 300 Ð½Ð¼ Ð¸ ÑÑÐµÐ´Ð½Ð¸Ð¼ Ð´Ð¸Ð°Ð¼ÐµÑÑÐ¾Ð¼ Ð¾Ñ 150 Ð½Ð¼ Ð¿ÑÐ¸ Ð¿Ð»Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð¼Ð°ÑÑÐ¸Ð²Ð° (108-109 ÑÐ¼-2) Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð¸Ñ Ð¾Ð¿ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð°. Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° Ð¼ÐµÑÐ¾Ð´Ð¸ÐºÐ° Ð¿Ð°ÑÑÐ¸Ð²Ð°ÑÐ¸Ð¸ Ð±Ð¾ÐºÐ¾Ð²Ð¾Ð¹ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð½Ð°Ð½Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÑ Ð¼ÐµÐ·Ð°ÑÑÑÑÐºÑÑÑ InGaN/GaN Ð¿Ð¾ÑÑÐµÐ´ÑÑÐ²Ð¾Ð¼ Ð¶Ð¸Ð´ÐºÐ¾ÑÑÐ½Ð¾Ð³Ð¾-ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð² Ð³Ð¾ÑÑÑÐµÐ¼ ÑÐ°ÑÑÐ²Ð¾ÑÐµ KOH:H2O. Ð£Ð²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ðµ Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ ÑÑÑÑÐºÑÑÑ Ð¿Ð¾ÑÐ»Ðµ Ð¿Ð°ÑÑÐ¸Ð²Ð°ÑÐ¸Ð¸ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÐµÑ Ð² 2,5 ÑÐ°Ð·Ð° Ð¾ÑÐ½Ð¾ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ Ð¸ÑÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¿Ð»Ð°Ð½Ð°ÑÐ½Ð¾Ð¹ ÑÑÑÑÐºÑÑÑÑ. Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° Ð¼ÐµÑÐ¾Ð´Ð¸ÐºÐ° Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ ÑÐ¾ÑÐ¼Ñ Ð½Ð°Ð½Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÑ Ð¼ÐµÐ·Ð°ÑÑÑÑÐºÑÑÑ Ð¾Ñ ÑÑÐ°Ð¿ÐµÑÐ¸ÐµÐ²Ð¸Ð´Ð½Ð¾Ð¹ (ÑÐ³Ð¾Ð» Ð½Ð°ÐºÐ»Ð¾Ð½Ð° Ð±Ð¾ÐºÐ¾Ð²Ð¾Ð¹ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ 80Â°) Ð´Ð¾ ÐºÐ°ÑÐ°Ð½Ð´Ð°ÑÐµÐ²Ð¸Ð´Ð½Ð¾Ð¹ Ð¿Ð¾ÑÑÐµÐ´ÑÑÐ²Ð¾Ð¼ Ð¶Ð¸Ð´ÐºÐ¾ÑÑÐ½Ð¾Ð³Ð¾-ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ. ÐÐ¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¾, ÑÑÐ¾ ÑÐ¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ ÑÐ¾ÑÐ¼Ð¾Ð¹ Ð½Ð°Ð½Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½Ð¾Ð¹ Ð¼ÐµÐ·Ñ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÑÐµÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÑ Ð²ÑÐ²Ð¾Ð´Ð° ÑÐ²ÐµÑÐ° Ð¸Ð· Ð½ÐµÑ, Ð½Ð°Ð¿ÑÐ¸Ð¼ÐµÑ Ð¿ÑÐ¸ Ð´Ð¸Ð°Ð¼ÐµÑÑÐ°Ñ Ð¿Ð¾ÑÑÐ´ÐºÐ° 150 Ð½Ð¼ Ð´Ð»Ñ ÑÐ¸Ð»Ð¸Ð½Ð´ÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ð¸ ÑÐµÐ°Ð»Ð¸Ð·ÑÐµÑÑÑ Ð¾Ð´Ð½Ð¾Ð¼Ð¾Ð´Ð¾Ð²ÑÐ¹ ÑÐµÐ¶Ð¸Ð¼ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ð¸ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¼Ð¾Ð³ÑÑ Ð±ÑÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ñ Ð² ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¿ÑÐ¸Ð»Ð¾Ð¶ÐµÐ½Ð¸ÑÑ, Ð² ÑÐ¾Ð¼ ÑÐ¸ÑÐ»Ðµ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð²ÑÑÐ¾ÐºÐ¾ÑÑÑÐµÐºÑÐ¸Ð²Ð½ÑÑ ÑÐ²ÐµÑÐ¾Ð¸Ð·Ð»ÑÑÐ°ÑÐµÐ»ÐµÐ¹.
description: The given work is devoted to studying of the formation of an array of InGaN / GaN nanorods and the study of their optoelectronic properties. During the research, arrays of nano-sized InGaN / GaN mesa structures with a height of 300 nm and an average diameter of 150 nm were formed at an array density (108 - 109 cm -2 ) and their optoelectronic properties were investigated. A technique has been developed for the passivation of the lateral surface of InGaN/GaN nanorod structures by wet chemical etching in a hot KOH:H2O solution. The increase photoluminescence intensity of the structures after passivation is 2.5 times relative to the initial planar structure. Changing the shape technique of nanorod structures from trapezoidal (angle of inclination of the lateral surface 80Â°) to pencil-like by means of liquid-chemical etching has been developed. Modeling of the optical properties showed that the control of the shape of nanorod determines the parameters of extraction from it, for example, at diameters of the order of 150 nm, a single-mode generation mode is realized for its cylindrical geometry. The results obtained can be used in various applications, including for the creation of highly efficient light emitters.