title: Ð¡ÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ GaN Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÐÐÐ¡ÐÐ¤Ð­
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Selective epitaxy GaN by the MOVPE method
Creators: name: ÐÐ²Ð°Ð½Ð¾Ð², ÐÐ»Ð°Ð´Ð¸Ð¼Ð¸Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
GaN
ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
ÐÐÐ¡ÐÐ¤Ð­
Ð³Ð°Ð·Ð¾ÑÐ°Ð·Ð½Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð¼ÐµÑÐ¾Ð´ Ð¸Ð¾Ð½Ð½Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ
epitaxy
selective epitaxy
MOVPE
vapor phase epitaxy
focused ion beam etching

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¼ÐµÑÐ¾Ð´Ð¸ÐºÐ¸ ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ ÑÐ¾ÑÑÐ° ÑÑÑÑÐºÑÑÑ GaN, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¿Ð¾Ð¸ÑÐºÑ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ ÑÐ¾ÑÑÐ° Ð´Ð»Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ Ð¿ÑÐ¾ÑÑÑÐ°Ð½ÑÑÐ²ÐµÐ½Ð½ÑÑ ÑÑÑÑÐºÑÑÑ Ð½Ð¸ÑÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ ÑÑÐ±Ð¼Ð¸ÐºÑÐ¾Ð½Ð½Ð¾Ð³Ð¾ ÑÐ°Ð·Ð¼ÐµÑÐ°, Ñ.Ðµ. Ð¿Ð¾ÑÑÐ´ÐºÐ° Ð¸Ð»Ð¸ Ð¼ÐµÐ½ÐµÐµ Ð½ÐµÑÐºÐ¾Ð»ÑÐºÐ¸Ñ ÑÐ¾ÑÐµÐ½ Ð½Ð°Ð½Ð¾Ð¼ÐµÑÑÐ¾Ð² ÑÐ¾ÑÑ Ð±Ñ Ð² Ð¾Ð´Ð½Ð¾Ð¼ Ð¸Ð· Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ð¹. ÐÐ°Ð´Ð°ÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐµÑÐ°Ð»Ð¸ÑÑ Ð² ÑÐ¾Ð´Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ:
1. ÐÑÐ±Ð¾Ñ Ð¸ Ð¾Ð±ÑÐ°Ð±Ð¾ÑÐºÐ° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐµÑÐ½Ð¾Ð¹ ÑÑÑÑÐºÑÑÑÑ.
2. Ð Ð¾ÑÑ Ð¿ÑÐ¾Ð¼ÐµÐ¶ÑÑÐ¾ÑÐ½Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ GaN Ð¸ Ð½Ð°Ð½ÐµÑÐµÐ½Ð¸Ðµ Ð¼Ð°ÑÐ¾ÑÐ½Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ Si3N4 Ð½Ð° Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸.
3. Ð¤Ð¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ Ð¾ÐºÐ¾Ð½ Ð² Ð¼Ð°ÑÐºÐµ Ð½Ð¸ÑÑÐ¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ Ñ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð½ÑÐ¼ ÑÐ¸ÑÑÐ½ÐºÐ¾Ð¼.
4. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ Ð½ÐµÑÐºÐ¾Ð»ÑÐºÐ¸Ñ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÐÐÐ¡ÐÐ¤Ð­ Ñ ÑÐµÐ»ÑÑ Ð¿Ð¾Ð¸ÑÐºÐ° Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ ÑÐ¾ÑÑÐ°.
Ð Ð°Ð±Ð¾ÑÐ° Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð° Ð½Ð° Ð±Ð°Ð·Ðµ Ð¤Ð¢Ð Ð¸Ð¼. Ð.Ð¤. ÐÐ¾ÑÑÐµ, ÑÐµÐ½ÑÑ ÑÐ¸Ð·Ð¸ÐºÐ¸ Ð½Ð°Ð½Ð¾Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ, Ð»Ð°Ð±Ð¾ÑÐ°ÑÐ¾ÑÐ¸Ñ ÑÐ¸Ð·Ð¸ÐºÐ¸ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ Ð.Ð. Ð£ÑÑÐ¸Ð½Ð¾Ð²Ð°, Ð³Ð´Ðµ Ð¿ÑÐ¾Ð¸Ð·Ð²Ð¾Ð´Ð¸Ð»ÑÑ ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½ÑÐ¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐ¹ ÑÐ¾ÑÑ, Ð° ÑÐ°ÐºÐ¶Ðµ Ð²ÑÐµ Ð¿ÑÐ¾ÑÐµÐ´ÑÑÑ Ð¿Ð¾Ð´Ð³Ð¾ÑÐ¾Ð²ÐºÐ¸ Ðº Ð½ÐµÐ¼Ñ Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð².
Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð±ÑÐ»Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð¾Ð±ÑÐ°Ð·ÑÑ, Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÐµ Ð² Ð¾Ð±ÑÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ Ð´Ð»Ñ ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸ GaN, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÐµ Ð¿ÑÐ¸ Ð¿Ð¾Ð½Ð¸Ð¶ÐµÐ½Ð½Ð¾Ð¹ ÑÐ¾ÑÑÐ¾Ð²Ð¾Ð¹ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐµ. ÐÑÐ»Ð¾ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ Ñ Ð¿Ð¾Ð½Ð¸Ð¶ÐµÐ½Ð¸ÐµÐ¼ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÑÑÑÐºÑÑÑÑ ÑÑÐ°Ð½Ð¾Ð²Ð¸Ð»Ð¸ÑÑ Ð²ÑÐµ Ð±Ð¾Ð»ÐµÐµ ÑÑÐ°Ð³Ð¼ÐµÐ½ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¼Ð¸, Ð° ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ñ Ð½Ð°ÑÑÑÐ°Ð»Ð°ÑÑ. Ð ÐµÑÐµÐ½Ð¸ÐµÐ¼ ÑÑÐ¾Ð¹ Ð¿ÑÐ¾Ð±Ð»ÐµÐ¼Ñ ÑÑÐ°Ð»Ð¾ ÑÐ¼ÐµÐ½ÑÑÐµÐ½Ð¸Ðµ Ð¿Ð¾ÑÐ¾ÐºÐ° ÑÑÐ¸Ð¼ÐµÑÐ¸Ð»Ð³Ð°Ð»Ð»Ð¸Ñ. Ð Ð¸ÑÐ¾Ð³Ðµ Ð±ÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½ÑÐµ ÑÑÑÑÐºÑÑÑÑ Ñ ÑÐµÑÐºÐ¾Ð¹ Ð¾Ð³ÑÐ°Ð½ÐºÐ¾Ð¹, Ð²ÑÑÐ¾ÐºÐ¾Ð¹ ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑÑ ÑÐ¾ÑÑÐ°. ÐÑÑÐ¾ÑÐ° Ð¿Ð¾Ð»Ð¾ÑÐºÐ° ÑÐ¾ÑÑÐ°Ð²Ð»ÑÐ»Ð° 50 Ð½Ð¼ Ð² Ð¿ÑÐ¾ÑÐµÑÑÐµ ÑÐ¾ÑÑÐ° Ð¿ÑÐ¾Ð´Ð¾Ð»Ð¶Ð¸ÑÐµÐ»ÑÐ½Ð¾ÑÑÑÑ 5 ÑÐµÐº. Ð¢Ð°ÐºÐ¸Ð¼ Ð¾Ð±ÑÐ°Ð·Ð¾Ð¼, Ð±ÑÐ»Ð° Ð´Ð¾ÑÑÐ¸Ð³Ð½ÑÑÐ° ÑÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ Ð¿Ð¾ Ð¿Ð¾Ð¸ÑÐºÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ ÑÐ¾ÑÑÐ° Ð¿ÑÐ¾ÑÑÑÐ°Ð½ÑÑÐ²ÐµÐ½Ð½ÑÑ ÑÑÑÑÐºÑÑÑ GaN ÑÑÐ±Ð¼Ð¸ÐºÑÐ¾Ð½Ð½Ð¾Ð³Ð¾ ÑÐ°Ð·Ð¼ÐµÑÐ°.
description: The given work is devoted to study of the method of selective growth of GaN structures, as well as to the search for optimal growth conditions for obtaining spatial structures of gallium nitride of submicron size, i.e. of the order of or less than several hundred nanometers in at least one of the dimensions. The research set the following goals:
1. The selection and processing of the substrate structure.
2. The growth of the intermediate GaN layer and the deposition of a Si3N4 mask layer on the surface of the substrate.
3. The formation of windows in a silicon nitride mask with a specific pattern.
4. Conducting several processes of selective epitaxy by the MOVPE method in order to search for optimal growth conditions.
The work was carried out on the basis of the Ioffe Institute, Centre of Nanoheterostructures, Laboratory of Physics of Semiconductor Heterostructures V.M. Ustinova, where selective epitaxial growth was performed, as well as all the procedures for preparing for it and studying the samples obtained.
As a result, samples grown under ordinary conditions for selective GaN epitaxy were studied, as well as obtained at low growth temperature. It was shown that with decreasing temperature, the resulting structures became more fragmented, and the selectivity of the deposition was impaired. The solution to this problem was to reduce the flow of trimethylgallium. As a result, homogeneous structures with a clear cut and high selectivity of growth were obtained. The strip height was 50 nm during the growth process lasting 5 seconds. Thus, the goal was achieved of finding conditions for the growth of spatial structures of GaN submicron size.