title: Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ ÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ð¼Ð°ÑÐºÐ¸ÑÑÑÑÐ¸Ñ Ð¿Ð¾ÐºÑÑÑÐ¸Ð¹ Ð² ÑÑÐ±Ð¼Ð¸ÐºÑÐ¾Ð½Ð½Ð¾Ð¼ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð±ÐµÐ·Ð¼Ð°ÑÐ¾ÑÐ½Ð¾Ð¹ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Development of technology of masking coatings formation in submicron range by maskless lithography
Creators: name: ÐÐ°Ð³Ð°ÐµÐ²Ð°, ÐÐ»Ð¸Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð±ÐµÐ·Ð¼Ð°ÑÐ¾ÑÐ½Ð°Ñ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ñ
Ð½Ð°Ð½Ð¾ÑÑÐµÑÐ½Ð°Ñ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ñ
Ð¼ÐµÑÐ¾Ð´ ÑÐµÐ½ÑÑÐ¸ÑÑÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ
Ð¼ÐµÑÐ¾Ð´ ÐÐµÐ½Ð³Ð¼ÑÑÐ°-ÐÐ»Ð¾Ð´Ð¶ÐµÑÑ
Ð¿Ð¾Ð»Ð¸ÑÑÐ¸ÑÐ¾Ð»ÑÐ½ÑÐµ Ð½Ð°Ð½Ð¾ÑÑÐµÑÑ
ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÐµ Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑÑ
maskless lithography
nanosphere lithography
spin-coating
Langmuir-Blodgett method
polystyrene nanospheres
silicon nanostructures

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° ÑÐµÑÐµÐ½Ð¸Ñ Ð°ÐºÑÑÐ°Ð»ÑÐ½Ð¾Ð¹ Ð½Ð°ÑÑÐ½Ð¾-Ð¿ÑÐ°ÐºÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð·Ð°Ð´Ð°ÑÐ¸ â ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐµ Ð¿ÑÐ¾ÑÑÐ¾Ð¹, Ð²ÑÑÐ¾ÐºÐ¾Ð¿ÑÐ¾Ð¸Ð·Ð²Ð¾Ð´Ð¸ÑÐµÐ»ÑÐ½Ð¾Ð¹ Ð¸ Ð´ÐµÑÑÐ²Ð¾Ð¹ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ ÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ð¼Ð°ÑÐºÐ¸ÑÑÑÑÐ¸Ñ Ð¿Ð¾ÐºÑÑÑÐ¸Ð¹ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð¿ÑÐ¾ÑÐµÑÑÐ° Ð½Ð°Ð½Ð¾ÑÑÐµÑÐ½Ð¾Ð¹ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ð¸ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÑ Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑ. Ð ÑÐ¾Ð´Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð±ÑÐ» Ð¸Ð·ÑÑÐµÐ½ Ð¿ÑÐ¾ÑÐµÑÑ Ð½Ð°Ð½Ð¾ÑÑÐµÑÐ½Ð¾Ð¹ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ð¸ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÑÐµÐ½ÑÑÐ¸ÑÑÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¿Ð¾Ð»Ð¸ÑÑÐ¸ÑÐ¾Ð»ÑÐ½ÑÑ ÑÑÐµÑ, Ð° Ð¸Ð¼ÐµÐ½Ð½Ð¾ Ð±ÑÐ» Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÑÐ½ ÑÐ°ÑÐ°ÐºÑÐµÑ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¿ÑÐ¾ÑÐµÑÑÐ° ÑÐµÐ½ÑÑÐ¸ÑÑÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ (ÑÐºÐ¾ÑÐ¾ÑÑÑ Ð¸ Ð²ÑÐµÐ¼Ñ ÑÐµÐ½ÑÑÐ¸ÑÑÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ, ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ð¸ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½ÑÐ¾Ð² Ð² ÑÐ°ÑÑÐ²Ð¾ÑÐµ) Ð½Ð° Ð¿Ð»Ð¾ÑÐ°Ð´Ñ Ð·Ð°Ð¿Ð¾Ð»Ð½ÐµÐ½Ð¸Ñ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸ Ð¼Ð¾Ð½Ð¾- Ð¸ Ð±Ð¸ÑÐ»Ð¾ÐµÐ¼ Ð½Ð°Ð½Ð¾ÑÑÐµÑ. ÐÐ° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÑ Ð´Ð°Ð½Ð½ÑÑ Ð±ÑÐ»Ð¾ Ð¿Ð¾Ð´Ð¾Ð±ÑÐ°Ð½Ð¾ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½Ð¾Ðµ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸Ðµ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¸ ÑÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð° Ð¼Ð¾Ð½Ð¾ÑÐ»Ð¾Ð¹Ð½Ð°Ñ Ð½Ð°Ð½Ð¾ÑÑÐµÑÐ½Ð°Ñ Ð¼Ð°ÑÐºÐ° (Ð´Ð¸Ð°Ð¼ÐµÑÑ Ð½Ð°Ð½Ð¾ÑÑÐµÑ 300 Ð½Ð¼) Ð½Ð° Si Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ Ñ Ð¿Ð»Ð¾ÑÐ°Ð´ÑÑ Ð·Ð°Ð¿Ð¾Ð»Ð½ÐµÐ½Ð¸Ñ 97 %. ÐÑÐ» ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½ Ð¸ ÑÐ¾Ð·Ð´Ð°Ð½ Ð°Ð²ÑÐ¾Ð¼Ð°ÑÐ¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¹ Ð¿ÑÐ¾Ð¼ÑÑÐ»ÐµÐ½Ð½Ð¾Ð¹ Ð¾Ð±ÑÐ°Ð·ÐµÑ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ Ð±ÐµÐ·Ð¼Ð°ÑÐ¾ÑÐ½Ð¾Ð¹ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ð¸ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÐÐµÐ½Ð³Ð¼ÑÑÐ°-ÐÐ»Ð¾Ð´Ð¶ÐµÑÑ. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð½Ð° Si Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ Ð±ÑÐ»Ð¾ ÑÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¾ Ð¼Ð¾Ð½Ð¾ÑÐ»Ð¾Ð¹Ð½Ð¾Ðµ Ð¿Ð»Ð¾ÑÐ½Ð¾ÑÐ¿Ð°ÐºÐ¾Ð²Ð°Ð½Ð½Ð¾Ðµ Ð¿Ð¾ÐºÑÑÑÐ¸Ðµ Ð¸Ð· Ð¿Ð¾Ð»Ð¸ÑÑÐ¸ÑÐ¾Ð»ÑÐ½ÑÑ ÑÑÐµÑ Ð´Ð¸Ð°Ð¼ÐµÑÑÐ¾Ð¼ 1000 Ð½Ð¼ Ñ Ð¿Ð»Ð¾ÑÐ°Ð´ÑÑ Ð·Ð°Ð¿Ð¾Ð»Ð½ÐµÐ½Ð¸Ñ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸ 99 % Ð¸ Ð¿Ð»Ð¾ÑÐ°Ð´ÑÑ Ð³ÐµÐºÑÐ°Ð³Ð¾Ð½Ð°Ð»ÑÐ½Ð¾Ð³Ð¾ ÑÐ¿Ð¾ÑÑÐ´Ð¾ÑÐµÐ½Ð½Ð¾Ð³Ð¾ Ð´Ð¾Ð¼ÐµÐ½Ð° Ñ Ð¾Ð´Ð½Ð¾Ð¹ Ð¾ÑÐ¸ÐµÐ½ÑÐ°ÑÐ¸ÐµÐ¹ 1600 Ð¼ÐºÐ¼2. ÐÑÐ¾Ð¼Ðµ ÑÐ¾Ð³Ð¾, Ð² ÑÐ°Ð±Ð¾ÑÐµ Ð±ÑÐ» Ð¿Ð¾Ð´ÑÐ¾Ð±Ð½Ð¾ Ð¸Ð·ÑÑÐµÐ½ Ð¿ÑÐ¾ÑÐµÑÑ ÐºÐ¾Ð½ÑÑÐ¾Ð»Ð¸ÑÑÐµÐ¼Ð¾Ð³Ð¾ ÑÐ¼ÐµÐ½ÑÑÐµÐ½Ð¸Ñ ÑÐ°Ð·Ð¼ÐµÑÐ° Ð½Ð°Ð½Ð¾ÑÑÐµÑ Ð² ÐºÐ¸ÑÐ»Ð¾ÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¸Ð½Ð´ÑÐºÑÐ¸Ð²Ð½Ð¾-ÑÐ²ÑÐ·Ð°Ð½Ð½Ð¾Ð¹ Ð¿Ð»Ð°Ð·Ð¼Ðµ, ÑÑÐ¾ Ð¿Ð¾Ð·Ð²Ð¾Ð»Ð¸Ð»Ð¾ Ð¿Ð¾Ð»ÑÑÐ¸ÑÑ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÐµ Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑÑ ÑÐ°Ð·Ð»Ð¸ÑÐ½Ð¾Ð¹ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ð¸ (Ð½Ð°Ð½Ð¾ÑÑÐ¾Ð»Ð±Ð¸ÐºÐ¸, Ð½Ð°Ð½Ð¾Ð¸Ð³Ð»Ñ) Ð¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÐ°Ð·Ð¼ÐµÑÐ¾Ð².
description: This work is devoted to solving important scientific and practical problem - development of a simple, efficient, and inexpensive technology of masking coatings formation by a process of nanosphere lithography for creating silicon nanostructures. The process of nanosphere lithography using spin-coating method with polystyrene spheres was studied. Namely, the influence of technological parameters (centrifugation speed and time, concentrations of compo-nents in the solution) on the substrate coverage area with nanospheres was determined. Based on the experimental data the optimum ratio of the technological parameters was selected and a monolayer nanosphere mask (nanosphere diameter of 300 nm) on Si substrate with 97 % coverage area was created. An automated prototype of an industrial-scale machine for creating coatings by Langmuir-Blodgett method was designed and developed. As a result, a monolayer densely packed coating substrate using 1000 nm diameter microspheres was formed on a Si substrate with 99 % coverage area and hexagonal ordered domain area with one orientation of 1600 Î¼m2. In addition, the process of controlled reduction of nanospheres size in oxygen inductively coupled plasma was studied in detail. It made it possible to obtain silicon nanostructures of different geometries (nanoneedles and nanorods) and different sizes.