title: ÐÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐ¸ Ð´Ð¸Ð½Ð°Ð¼Ð¸ÑÐµÑÐºÐ¾Ð¹ Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð°ÑÐ¸Ð¸ ÑÐ´ÐµÑ As Ð¸ P Ð² ÐºÑÐµÐ¼Ð½Ð¸Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Features of dynamic polarization of As and P nuclei in silicon
Creators: name: ÐÑÐ°Ð±Ð°ÑÑ, ÐÑÑÐµÑÐ»Ð°Ð²
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¹ Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÐ¹ ÑÐµÐ·Ð¾Ð½Ð°Ð½Ñ
Ð´Ð¸Ð½Ð°Ð¼Ð¸ÑÐµÑÐºÐ°Ñ Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð°ÑÐ¸Ñ ÑÐ´ÐµÑ
ÑÑÑÐµÐºÑ ÐÐ²ÐµÑÑ Ð°ÑÐ·ÐµÑÐ°
ÑÐ¾Ð»Ð¸Ð´-ÑÑÑÐµÐºÑ
ÐºÑÐµÐ¼Ð½Ð¸Ð¹
Ð¼ÑÑÑÑÐº
ÑÐ¾ÑÑÐ¾Ñ
electronic paramagnetic resonance
dynamic nuclear polarization
Overhauser effect
solid effect
silicon
arsenic
phosphorus

description: Ð¢ÐµÐ¼Ð° Ð²ÑÐ¿ÑÑÐºÐ½Ð¾Ð¹ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ: Â«ÐÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐ¸ Ð´Ð¸Ð½Ð°Ð¼Ð¸ÑÐµÑÐºÐ¾Ð¹ Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð°ÑÐ¸Ð¸ ÑÐ´ÐµÑ As Ð¸ P Ð² ÐºÑÐµÐ¼Ð½Ð¸Ð¸Â». ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° ÐºÐ¾Ð»Ð¸ÑÐµÑÑÐ²ÐµÐ½Ð½Ð¾Ð¼Ñ ÑÐ¾Ð¿Ð¾ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð² Ð¿ÑÐ¾Ð²ÐµÐ´ÑÐ½Ð½Ð¾Ð³Ð¾ Ð² 2017 Ð³Ð¾Ð´Ñ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ° Ð¸ ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÐ°ÑÑÑÑÐ°, ÐºÐ¾ÑÐ¾ÑÑÐ¹ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½ Ð½Ð¸Ð¶Ðµ. ÐÐ»Ñ ÑÑÐ¾Ð³Ð¾ ÑÑÐµÐ±Ð¾Ð²Ð°Ð»Ð¾ÑÑ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°ÑÑ ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÑÑ Ð¸ ÑÐ¸ÑÐ»ÐµÐ½Ð½ÑÑ Ð¼Ð¾Ð´ÐµÐ»Ð¸, ÑÐ¿Ð¾ÑÐ¾Ð±Ð½ÑÐµ Ð¾Ð¿Ð¸ÑÐ°ÑÑ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½Ñ, Ð¿Ð¾Ð´Ð¾Ð±ÑÐ°ÑÑ ÐºÐ»ÑÑÐµÐ²ÑÐµ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÑ, Ð¾Ð¿Ð¸ÑÑÐ²Ð°ÑÑÐ¸Ðµ Ð½Ð°Ð±Ð»ÑÐ´Ð°Ð²ÑÐ¸ÐµÑÑ ÑÑÑÐµÐºÑ ÐÐ²ÐµÑÑÐ°ÑÐ·ÐµÑÐ° Ð¸ ÑÐ¾Ð»Ð¸Ð´-ÑÑÑÐµÐºÑ, ÑÐ²Ð»ÑÑÑÐ¸ÐµÑÑ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼Ð°Ð¼Ð¸ Ð´Ð¸Ð½Ð°Ð¼Ð¸ÑÐµÑÐºÐ¾Ð¹ ÑÐ´ÐµÑÐ½Ð¾Ð¹ Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð°ÑÐ¸Ð¸ (ÐÐÐ¯) Ð² Ð¾Ð±ÑÐ°Ð·ÑÐµ ÐºÑÐµÐ¼Ð½Ð¸Ñ, Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð¼ Ð¼ÑÑÑÑÐºÐ¾Ð¼, Si:As; Ð¿Ð¾ÑÐ»Ðµ ÑÐµÐ³Ð¾ Ð¾ÑÐµÐ½Ð¸ÑÑ Ð¿ÑÐ¸Ð¼ÐµÑÐ½Ð¾Ðµ Ð²ÑÐµÐ¼Ñ ÐºÑÐ¾ÑÑ-ÑÐµÐ»Ð°ÐºÑÐ°ÑÐ¸Ð¾Ð½Ð½ÑÑ Ð¿ÐµÑÐµÑÐ¾Ð´Ð¾Ð² Ð² ÑÐ°Ð¼ÐºÐ°Ñ ÐºÐ°Ð¶Ð´Ð¾Ð³Ð¾ Ð¸Ð· Ð¾Ð±Ð¾Ð·Ð½Ð°ÑÐµÐ½Ð½ÑÑ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼Ð¾Ð² ÐÐÐ¯. ÐÑÐ¸ ÑÐ¾ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ð¸ ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÐ°ÑÑÑÑÐ° Ð±ÑÐ»Ð¸ Ð¿Ð¾ÑÑÑÐ¾ÐµÐ½Ñ ÑÐ¸ÑÑÐµÐ¼Ñ ÐºÐ¸Ð½ÐµÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ð¹, Ð¾Ð¿Ð¸ÑÑÐ²Ð°ÑÑÐ¸Ðµ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ðµ ÑÐ¸ÑÐ»Ð° Ð¿ÑÐ¸Ð¼ÐµÑÐµÐ¹ Ñ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÑÐ½Ð½ÑÐ¼ Ð½Ð°Ð±Ð¾ÑÐ¾Ð¼ Ð¿ÑÐ¾ÐµÐºÑÐ¸Ð¹ ÑÐ´ÐµÑÐ½Ð¾Ð³Ð¾ Ð¸ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð³Ð¾ ÑÐ¿Ð¸Ð½Ð¾Ð², Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ ÐºÐ¾ÑÐ¾ÑÑÑ Ð±ÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ñ, Ð¾Ð¿Ð¸ÑÑÐ²Ð°ÑÑÐ¸Ðµ Ð¿ÑÐ¾ÑÐµÑÑÑ, Ð²Ð¾Ð·Ð½Ð¸ÐºÐ°ÑÑÐ¸Ðµ Ð² Ð¾Ð±ÑÐ°Ð·ÑÐµ Ð² ÑÐ²ÑÐ·Ð¸ Ñ Ð²ÑÐ½ÑÐ¶Ð´ÐµÐ½Ð½ÑÐ¼Ð¸ Ð¿ÐµÑÐµÑÐ¾Ð´Ð°Ð¼Ð¸ Ð² Ð¾Ð±ÑÐ°Ð·ÑÐµ Ñ ÑÐµÑÐµÐ½Ð¸ÐµÐ¼ Ð²ÑÐµÐ¼ÐµÐ½Ð¸. ÐÑÐµÐ¼ÐµÐ½Ð° ÐºÑÐ¾ÑÑ-ÑÐµÐ»Ð°ÐºÑÐ°ÑÐ¸Ð¾Ð½Ð½ÑÑ Ð¿ÐµÑÐµÑÐ¾Ð´Ð¾Ð² Ð² Ð¾Ð±ÑÐ°Ð·ÑÐµ Si:As Ð¾ÐºÐ°Ð·Ð°Ð»Ð¸ÑÑ ÑÐ°Ð²Ð½Ñ Ð¿ÑÐ¸Ð¼ÐµÑÐ½Ð¾ 10 Ñ ÐºÐ°Ðº Ð´Ð»Ñ ÑÐ¾Ð»Ð¸Ð´-ÑÑÑÐµÐºÑÐ°, ÑÐ°Ðº Ð¸ Ð´Ð»Ñ ÑÑÑÐµÐºÑÐ° ÐÐ²ÐµÑÑÐ°ÑÐ·ÐµÑÐ°. ÐÑÐµÐ´Ð¿Ð¾Ð»Ð°Ð³Ð°ÐµÑÑÑ, ÑÑÐ¾ Ð´Ð°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾Ð¼Ð¾Ð¶ÐµÑ Ð² ÑÐ°Ð·Ð²Ð¸ÑÐ¸Ð¸ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ Ð²ÑÑÐ¸ÑÐ»ÐµÐ½Ð¸Ð¹ Ð¸ Ð² Ð¼ÐµÐ´Ð¸ÑÐ¸Ð½Ðµ, Ð½Ð°Ð¿ÑÐ¸Ð¼ÐµÑ, Ð¿ÑÐ¸ Ð°Ð½Ð°Ð»Ð¸Ð·Ðµ Ð±Ð¸Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ñ ÑÑÑÑÐºÑÑÑ Ð¸Ð»Ð¸ Ð´Ð»Ñ ÑÐ»ÑÑÑÐµÐ½Ð¸Ñ ÑÐ¶Ðµ ÑÑÑÐµÑÑÐ²ÑÑÑÐ¸Ñ Ð°Ð¿Ð¿Ð°ÑÐ°ÑÐ¾Ð² Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾-ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ½Ð¾Ð¹ ÑÐ¾Ð¼Ð¾Ð³ÑÐ°ÑÐ¸Ð¸ (ÐÐ Ð¢).
description: This work is devoted to the quantitative comparison of the results of the experiment conducted in 2017 and the theoretical calculation, which is presented below. To do this, it was necessary to develop theoretical and numerical models capable of describing the experiment, to select key parameters describing the observed Overhauser effect and solid effect, which are mechanisms of dynamic nuclear polarization (DNP) in an arsenic-doped silicon sample, Si:As; after which, estimate the approximate time of cross-relaxation transitions within each of the designated DNP mechanisms. When compiling the theoretical calculation, systems of kinetic equations were constructed describing the change in the number of impurities with a certain set of projections of nuclear and electron spins, with the help of which equations were obtained describing the processes occurring in the sample due to forced transitions in the sample over time. The times of cross-relaxation transitions in the Si:As turned out to be approximately 10 s for both the solid effect and the Overhauser effect. It is assumed that this work may be helpful in the development of quantum computing and in medicine, for example, in the analysis of biological structures or to improve existing magnetic resonance imaging (MRI) devices.