title: Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° Ð¼Ð°Ð»Ð¾ÑÑÐ¼ÑÑÐµÐ³Ð¾ Ð¡ÐÐ§-ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ ÑÐ°Ð½ÑÐ¸Ð¼ÐµÑÑÐ¾Ð²Ð¾Ð³Ð¾ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð° Ð´Ð»Ñ Ð¾Ð¿Ð¾ÑÐ½Ð¾Ð³Ð¾ Ð°Ð²ÑÐ¾Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾ÑÐ° Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¾ÑÐµÑÐµÑÑÐ²ÐµÐ½Ð½ÑÑ Ð°ÐºÑÐ¸Ð²Ð½ÑÑ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ¾Ð²
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Development of a low noise microwave amplifier of a centimetre range for a oscillator support based on domestic active elements
Creators: name: ÐÐ¾Ð·Ð³ÑÐ½Ð¾Ð²Ð°, Ð¯Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: ÑÐ°Ð·Ð¾Ð²ÑÐ¹ ÑÑÐ¼
Ð¼Ð°Ð»Ð¾ÑÑÐ¼ÑÑÐ¸Ð¹ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ
Ð¾Ð¿Ð¾ÑÐ½ÑÐ¹ Ð°Ð²ÑÐ¾Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾Ñ
Ð¾ÑÐµÑÐµÑÑÐ²ÐµÐ½Ð½ÑÐ¹ ÑÑÐ°Ð½Ð·Ð¸ÑÑÐ¾Ñ
Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ð¹ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾Ñ
Ð¼Ð¸ÐºÑÐ¾Ð¿Ð¾Ð»Ð¾ÑÐºÐ¾Ð²ÑÐµ Ð»Ð¸Ð½Ð¸Ð¸
Ð¾Ð±ÑÐ°ÑÐ½Ð°Ñ ÑÐ²ÑÐ·Ñ
phase noise
low-noise amplifier
reference oscillator
domestic transistor
dielectric resonator
microstrip lines
transport land

description: Ð¦ÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐµÑÑÑ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° ÐÐ¨Ð£ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¡ÐÐ§ ÑÐ°Ð½ÑÐ¸Ð¼ÐµÑÑÐ¾Ð²Ð¾Ð³Ð¾ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð° (ÑÐ°Ð±Ð¾ÑÐ¸Ðµ ÑÐ°ÑÑÐ¾ÑÑ Ð²Ð±Ð»Ð¸Ð·Ð¸ 10 ÐÐÑ) Ð² Ð³Ð¸Ð±ÑÐ¸Ð´Ð½Ð¾Ð¼ Ð¸ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ð¸Ð¸ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¾ÑÐµÑÐµÑÑÐ²ÐµÐ½Ð½ÑÑ Ð°ÐºÑÐ¸Ð²Ð½ÑÑ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ¾Ð² Ð¸ Ð¾ÑÐµÐ½ÐºÐ° ÐµÐ³Ð¾ ÑÐ°Ð·Ð¾Ð²ÑÑ ÑÑÐ¼Ð¾Ð² Ð½Ð° Ð½Ð¸Ð·ÐºÐ¸Ñ ÑÐ°ÑÑÐ¾ÑÐ°Ñ Ð´Ð»Ñ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ ÐµÐ³Ð¾ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ñ Ð² Ð°Ð²ÑÐ¾Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾ÑÐµ. ÐÐ»Ñ Ð´Ð¾ÑÑÐ¸Ð¶ÐµÐ½Ð¸Ñ Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐµÐ»Ð¸ Ð±ÑÐ» Ð²ÑÐ±ÑÐ°Ð½ Ð¼Ð°Ð»Ð¾ÑÑÐ¼ÑÑÐ¸Ð¹ GaAs pHEMT ÑÑÐ°Ð½Ð·Ð¸ÑÑÐ¾Ñ 3Ð398Ð, Ð²ÑÐ¿ÑÑÐºÐ°ÐµÐ¼Ð¾Ð¹ ÑÐ¸ÑÐ¼Ð¾Ð¹ Â«ÐÐ»Ð°Ð½ÐµÑÐ°-ÐÑÐ³Ð°Ð»Â». Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ð¹ Ð±ÑÐ» ÑÐ¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½ 2-Ñ ÐºÐ°ÑÐºÐ°Ð´Ð½ÑÐ¹ ÐÐ¨Ð£ Ñ ÑÐ°Ð±Ð¾ÑÐµÐ¹ ÑÐ°ÑÑÐ¾ÑÐ¾Ð¹ 10 ÐÐÑ. ÐÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ ÑÑÐ¸Ð»ÐµÐ½Ð¸Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½Ð¾Ð³Ð¾ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð´Ð¾ÑÑÐ¸Ð³Ð°ÐµÑ 13.8 Ð´Ð, ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ ÑÑÐ¼Ð° 4.8 Ð´Ð, Ð° ÑÑÐ¾Ð²ÐµÐ½Ñ Ð Ð²ÑÑ1Ð´Ð ÑÐ°Ð²ÐµÐ½ 0.12 Ð´ÐÐ¼. ÐÐµÑÐ°Ð²Ð½Ð¾Ð¼ÐµÑÐ½Ð¾ÑÑÑ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ° ÑÑÐ¸Ð»ÐµÐ½Ð¸Ñ Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐ°ÑÑÐ¾Ñ 9â11 ÐÐÑ Ð½Ðµ Ð±Ð¾Ð»ÐµÐµ 6 Ð´Ð. ÐÐ¸Ð½Ð¸Ð¼Ð°Ð»ÑÐ½ÑÐ¹ ÑÑÐ¾Ð²ÐµÐ½Ñ Ð¤Ð¨ Ð½Ð° ÑÐ°ÑÑÐ¾ÑÐ°Ñ Ð°Ð½Ð°Ð»Ð¸Ð·Ð° 10 ÐºÐÑ Ð´Ð»Ñ ÑÐ°Ð±Ð¾ÑÐµÐ¹ ÑÐ°ÑÑÐ¾ÑÑ Ð´Ð¾ÑÑÐ¸Ð³Ð°ÐµÑ â160 Ð´ÐÐ½/ÐÑ Ð¿ÑÐ¸ Ð²ÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ â10 Ð´ÐÐ¼. Ð¢Ð°ÐºÐ¾Ð¹ ÑÑÐ¾Ð²ÐµÐ½Ñ Ð¤Ð¨ Ð±Ð»Ð¸Ð·Ð¾Ðº Ðº ÑÑÐ¾Ð²Ð½Ñ Ð¤Ð¨ Ð·Ð°ÑÑÐ±ÐµÐ¶Ð½ÑÑ Ð¼Ð°Ð»Ð¾ÑÑÐ¼ÑÑÐ¸Ñ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ ÑÑÐ¸Ñ Ð¶Ðµ ÑÐ°Ð±Ð¾ÑÐ¸Ñ ÑÐ°ÑÑÐ¾Ñ. Ð¢Ð°ÐºÐ¶Ðµ Ð±ÑÐ»Ð° Ð¿ÑÐ¾Ð¸Ð·Ð²ÐµÐ´ÐµÐ½Ð° Ð¾ÑÐµÐ½ÐºÐ° ÑÑÐ¾Ð²Ð½Ñ ÑÐ°Ð·Ð¾Ð²Ð¾Ð³Ð¾ ÑÑÐ¼Ð° Ð¾Ð¿Ð¾ÑÐ½Ð¾Ð³Ð¾ Ð°Ð²ÑÐ¾Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾ÑÐ° Ñ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸ÐµÐ¼ Ð´Ð°Ð½Ð½Ð¾Ð³Ð¾ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ. ÐÐ»Ñ ÐºÐ¾Ð»ÐµÐ±Ð°ÑÐµÐ»ÑÐ½Ð¾Ð¹ ÑÐ¸ÑÑÐµÐ¼Ñ (ÐÐ¡) Ñ Ð½Ð°Ð³ÑÑÐ¶ÐµÐ½Ð½Ð¾Ð¹ Ð´Ð¾Ð±ÑÐ¾ÑÐ½Ð¾ÑÑÑÑ QÐ½ ÑÐ°Ð²Ð½Ð¾Ð¹ 5000 ÑÑÐ¾Ð²ÐµÐ½Ñ Ð¤Ð¨ Ð´Ð¾ÑÑÐ¸Ð³Ð°ÐµÑ â120 Ð´ÐÐ½/ÐÑ Ð½Ð° ÑÐ°ÑÑÐ¾ÑÐµ Ð°Ð½Ð°Ð»Ð¸Ð·Ð° 10 ÐºÐÑ. ÐÐ°Ð½Ð½ÑÐµ Ð·Ð½Ð°ÑÐµÐ½Ð¸Ñ Ð±Ð»Ð¸Ð·ÐºÐ¸ Ðº ÑÑÐ¾Ð²Ð½Ñ Ð·Ð°ÑÑÐ±ÐµÐ¶Ð½ÑÑ Ð¾Ð¿Ð¾ÑÐ½ÑÑ Ð°Ð²ÑÐ¾Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾ÑÐ¾Ð² Ñ ÑÐ°Ð±Ð¾ÑÐ¸Ð¼Ð¸ ÑÐ°ÑÑÐ¾ÑÐ°Ð¼Ð¸ Ð±Ð»Ð¸Ð·ÐºÐ¸Ð¼Ð¸ Ðº 10 ÐÐÑ. Ð¦ÐµÐ»ÑÑ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÐ²Ð»ÑÐµÑÑÑ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð² Ð¿Ð¾ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð¾ÑÐµÑÐµÑÑÐ²ÐµÐ½Ð½ÑÑ Ð³Ð¸Ð±ÑÐ¸Ð´Ð½Ð¾-Ð¸Ð½ÑÐµÐ³ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐµÐ¼ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ñ Ð¼Ð°Ð»ÑÐ¼ ÑÑÐ¾Ð²Ð½ÐµÐ¼ ÑÐ°Ð·Ð¾Ð²ÑÑ ÑÑÐ¼Ð¾Ð² Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ GaAs ÑÑÐ°Ð½Ð·Ð¸ÑÑÐ¾ÑÐ¾Ð² Ð¸ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ ÑÑÐ¾Ð²Ð½Ñ Ð¤Ð¨ ÐÐÐ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÐ°ÐºÐ¾Ð³Ð¾ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð´Ð»Ñ ÑÐ°ÑÑÐ¼Ð¾ÑÑÐµÐ½Ð¸Ñ Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ÑÑÐ¸ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¸Ñ Ð½Ð° Ð¿ÑÐ°ÐºÑÐ¸ÐºÐµ. ÐÐ¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¾ÑÑ Ð² Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ðµ AWR Microwave Office.
description: The purpose of the work is to develop a microwave amplifier LNA of centimeter range (operating frequencies near 10 GHz) in a hybrid version based on domestic active elements and evaluation of its phase noise at low frequencies for the prospects of its use in a car generator. To achieve this goal, a low noise GaAs pHEMT transistor 3P398B manufactured by PlanetArgal was chosen. As a result of researches 2 cascade GaAs pHEMT with working frequency 10 GHz was simulated. The gain of the resulting amplifier is 13.8 dB, the noise figure is 4.8 dB, and the Ð Ð²ÑÑ1Ð´Ð level is 0.12 dBm. The gain in the 9-11 GHz frequency band is 6 dB or less. The minimum FS level at 10 kHz analysis frequencies for the operating frequency is -160 dBn/GHz with an input power of -10 dBm. This level of FS is close to that of foreign low noise amplifiers of the same operating frequencies. The phase noise level of the reference car generator using this amplifier has also been assessed. For oscillating system (CS) with loaded QÐ½ quality equal to 5000 the FS level reaches -120 dBn/Hz at 10 kHz analysis frequency. These values are close to the level of foreign reference autogenerators with operating frequencies close to 10 GHz. The purpose of modeling is to determine the prospects for creation of domestic hybrid integrated amplifier circuits with low phase noise level based on GaAs transistors and determine the level of OAG FS based on such amplifier for consideration of their practical use. Modelling was done in the AWR Microwave Office program.