cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Vorwort
Creators: name: Edelby, Neophytos
name: Jiménez Urresti, Teodoro Ignacio
name: Huizing, Petrus
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 3 Nr. 10 (1967): Concilium: Internationale Zeitschrift für Theologie, Band 3, Heft 10
Interconnection of Flexible CIGS Thin Film Solar Cells
Creators: name: Scheit, C.
name: Herrnberger, H.
name: Braun, A.
name: Ehrhardt, M.
name: Zimmer, K.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Thin Film Solar Cells
CIS and Other (II-VI) Ternary Thin Film Solar Cells

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3414-3417
description: To minimize shading when interconnecting single solar cells to solar modules the shingling technique
can be used. Having an electrically conductive substrate this interconnection technique can be applied without any
modification of the single solar cells itself. In case of electrically isolating substrates a contacting of the back metal
electrode from the backside is in general not possible without modification of the substrate.
Within this paper we present a possibility to interconnect flexible CIGS thin film solar cells on polyimide substrate
using the shingling technique. To expose the molybdenum layer from the backside the polyimide substrate has been
removed locally with a pulsed Excimer laser (248 nm wavelength, 20 ns pulse duration). To interconnect the exposed
back contact with the front contact of the next solar cell the blind vias can be filled with a conductive adhesive.
The surface of the exposed back contact of the CIGS solar cells has been characterized using optical microscope and
SEM to acquire information on the completeness of the polymer etching and possible damages of the thin films. To
characterize the exposed thin films electrically conductive-AFM images were made. First solar cells have been
contacted from backside and electrically characterized.
Der Apostel Petrus in der heutigen Exegese. Ein Forschungsbericht
Creators: name: Rigaux, Béda
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 3 Nr. 8/9 (1967): Concilium: Internationale Zeitschrift für Theologie, Band 3, Heft 8/9
Playing graphene nanodrums: force spectroscopy of graphene on Ru(0001)
Creators: name: Voloshina, Elena
name: Dedkov, Yuriy
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: Graphene, a thinnest material in the world, can form moire structures on different substrates, including graphite, h-BN, or metal surfaces. In such systems the structure of graphene, i. e. its corrugation, as well as its electronic and elastic properties are defined by the combination of the system geometry and local interaction strength at the interface. The corrugation in such structures on metals is heavily extracted from diffraction or local probe microscopy experiments and can be obtained only via comparison with theoretical data, which usually simulate the experimental findings. Here we show that graphene corrugation on metals can be measured directly employing atomic force spectroscopy and obtained value coincides with state-of-the-art theoretical results. We also address the elastic reaction of the formed graphene nanodoms on the indentation process by the scanning tip that is important for the modeling and fabrication of graphene-based nanoresonators on the nanoscale.
description: manuscript and supplementary material
Investigation of Recombination Processes in CIGS Based Solar Cells with Submicrometer Absorber Layers
Creators: name: Morel, B.
name: Mencaraglia, D.
name: Connolly, J.P.
name: Darga, A.
name: Gorge, V.
name: Djebbour, Z.
name: Jehl Li Kao, Z.
name: Rousset, J.
name: Donsanti, F.
name: Renou, G.
name: Naghavi, N.
name: Guillemoles, J.-F.
name: Lincot, D.
name: Gérard, I.
name: Tran-Van, P.
name: Etcheberry, A.
name: Voorwinden, G.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Thin Film Solar Cells
CIS and Other (II-VI) Ternary Thin Film Solar Cells

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3432-3435
description: Current versus voltage and temperature (IVT) characterizations have been performed on CIGS
(Cu(In,Ga)Se2 solar cells previously submitted to a chemical etching of their absorber layer. This study aims to
investigate the changes in recombination paths, if any, when the absorber layer thickness is reduced. Diode
parameters saturation current, ideality factor, series and parallel resistances were extracted from the IVT curves
through a method based on the one-diode model. No clear evolution with thickness of the parameters was found
among the etched samples. Temperature-dependent ideality factor and very high values of the saturation current
activation energy were deduced from the data, denoting a tunneling-enhanced interface recombination process. A
different behavior was however detected between the non etched control sample and the others that could be due to a
modification of the surface of the CIGS layer during the very early stages of the etch.
Industrial Low-Pressure Phosphorus Diffusion for High Performance and Excellent Uniformity
Creators: name: Mühlbauer, M.
name: Piechulla, A.
name: Voyer, C.
name: Citro, M.
name: Dahl, R.
name: Fath, P.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2028-2030
description: Centrotherm photovoltaic AG manufactures diffusion furnaces for the production of crystalline solar
cells. One of our developments is the low-pressure diffusion furnace that outperforms the original equipment.
Compared to the established atmospheric-pressure diffusion the main advantage of the low-pressure diffusion is the
reduced wafer-to-wafer distance without losses in sheet resistance uniformity, cycle time and efficiency. In this
paper, we specifically evaluate the high-throughput diffusion furnace to realize uniform phosphorous emitters for
156 x 156 mm2 p-type mono-crystalline silicon solar cells. The sheet resistance and the doping profile were
characterized using four-point probe measurements and ECV (Electrochemical Capacitance Voltage) analysis
respectively. The new low-pressure tube furnace is designed to obtain phosphorous emitters with sheet resistances in
the 53 – 100 /sq range and a wafer uniformity of less than 3 % with single loading in SiC long flat boats. Electrical
properties of the emitter solar cell structure with 60 /sq were characterized. This new equipment for low-pressure
diffusion provides superior boat uniformities and doping profiles. About 50 years of development in diffusion tube
furnaces resulted in an enhanced low-pressure tube system. The newly designed diffusion furnace enables customers
to reduce the slot distance compared to the standard one (4.72 mm) by half (2.38 mm) or more (2 mm) and therefore
increase the throughput up to 2500 or 3000 wafers per cycle respectively.
Implicit time integration for high-order compressible flow solvers
Creators: name: Pan, Yu
Publisher: name: Imperial College London
Year: 2022

description: The application of high-order spectral/hp element discontinuous Galerkin (DG) methods to unsteady compressible flow simulations has gained increasing popularity. However, the time step is seriously restricted when high-order methods are applied to an explicit solver. To eliminate this restriction, an implicit high-order compressible flow solver is developed using DG methods for spatial discretization, diagonally implicit Runge-Kutta methods for temporal discretization, and the Jacobian-free Newton-Krylov method as its nonlinear solver. To accelerate convergence, a block relaxed Jacobi preconditioner is partially matrix-free implementation with a hybrid calculation of analytical and numerical Jacobian.The problem of too many user-defined parameters within the implicit solver is then studied. A systematic framework of adaptive strategies is designed to relax the difficulty of parameter choices. The adaptive time-stepping strategy is based on the observation that in a fixed mesh simulation, when the total error is dominated by the spatial error, further decreasing of temporal error through decreasing the time step cannot help increase accuracy but only slow down the solver. Based on a similar error analysis, an adaptive Newton tolerance is proposed based on the idea that the iterative error should be smaller than the temporal error to guarantee temporal accuracy. An adaptive strategy to update the preconditioner based on the Krylov solver’s convergence state is also discussed. Finally, an adaptive implicit solver is developed that eliminates the need for repeated tests of tunning parameters, whose accuracy and efficiency are verified in various steady/unsteady simulations. An improved shock-capturing strategy is also proposed when the implicit solver is applied to high-speed simulations. Through comparisons among the forms of three popular artificial viscosities, we identify the importance of the density term and add density-related terms on the original bulk-stress based artificial viscosity. To stabilize the simulations involving strong shear layers, we design an extra shearstress based artificial viscosity. The new shock-capturing strategy helps dissipate oscillations at shocks but has negligible dissipation in smooth regions.
Die Einstellung der Byzantinischen Kirche zur islamitischen Welt nach dem Fall von Konstantinopel
Creators: name: Khoury, Adel-Théodore
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 3 Nr. 8/9 (1967): Concilium: Internationale Zeitschrift für Theologie, Band 3, Heft 8/9
Humanismus und Scholastik. Die Erneuerung des christlichen Denkens in der Renaissance
Creators: name: Weiler, Anton
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 3 Nr. 8/9 (1967): Concilium: Internationale Zeitschrift für Theologie, Band 3, Heft 8/9
The role of FACT in nucleosome inheritance
Creators: name: Smith, Christopher Kevin
Publisher: name: Imperial College London
Year: 2021

description: Nucleosomes are a barrier to the eukaryotic replisome and so must be at least partially disassembled. However, parental nucleosomes may possess important post-translational modifications that regulate local gene expression. They must, therefore, be redeposited onto the daughter DNA templates at the precise genomic location from which they were removed. How parental histones are transferred to the daughter DNA templates is currently unclear. The Saccharomyces cerevisiae histone chaperone FACT (Facilitates chromosome transactions) is required for the replication of chromatin in vitro and is a component of the replisome progression complex (RPC) in vivo. Using a pulldown approach with purified proteins, I confirmed that FACT directly binds DNA polymerase alpha and found that FACT also directly binds Csm3/Tof1 and the catalytic domain of DNA polymerase epsilon. I additionally confirmed that FACT binds the Mcm2-7 complex in the presence of histones and found that FACT also binds Ctf4 in the presence of histones. Using crosslinking mass spectrometry and alanine scanning mutagenesis, I identified the residues within Tof1 and Pol2 that directly bind FACT. I also identified the residues within Ctf4 that bind specifically to histones H3-H4. Therefore, Csm3/Tof1 may incorporate FACT into the RPC to facilitate parental nucleosome disassembly. FACTs direct interaction with Pol2 may facilitate the transfer of parental histones to DNA polymerase epsilon for histone deposition onto the leading strand. FACTs histone-mediated interactions with Mcm2 and Ctf4 may facilitate the transfer of parental histones to DNA polymerase alpha for histone deposition onto the lagging strand. The disruption of each interaction with FACT may reveal how parental histones, and thus epigenetic information, can be faithfully inherited in vivo.
Phase Stability and Electronic Structure of New Photovoltaic Compounds, Cu2II-IVSe4 (II: Zn, Cd, Hg, IV: Si, Ge, Sn)
Creators: name: Maeda, T.
name: Nakamura, S.
name: Wada, T.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Thin Film Solar Cells
CIS and Other (II-VI) Ternary Thin Film Solar Cells

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3422-3424
description: We have theoretically evaluated phase stability and electronic structure of Cu2II-IVSe4 (II = Zn, Cd, Hg, IV = Si, Ge,
Sn) and compared the results with those of Cu2ZnSnSe4 (CZTSe). The enthalpies of formation for kesterite (KS),
stannite (ST) and wurtz-stannite (WST) phases of Cu2II-IVSe4 were calculated by first principles calculation. In
Cu2ZnIVSe4 (IV=Si, Ge, and Sn), the KS phase is more stable than the ST and WST phases. On the other hand, in
Cu2IISnSe4, (II= Cd and Hg), the ST phase is more stable than the KS and WST phases. The theoretical band gaps of
KS-type Cu2ZnSiSe4 (1.48 eV) and Cu2ZnGeSe4 (1.10 eV) are wider than that of KS-type Cu2ZnSnSe4 (0.63 eV).
The theoretical band gaps of ST-type Cu2CdSnSe4 (0.52 eV) and ST-type Cu2HgSnSe4 (0.07 eV) are smaller than
that of KS-type Cu2ZnSnSe4 (0.63 eV). The valence band maximum (VBM) of Cu2ZnIVSe4 consists of an
antibonding orbital of Cu 3d and Se 4p, while the conduction band minimum (CBM) consists of an antibonding
orbital of IV ns and Se 4p. The VBMs of Cu 3d + Se 4p in Cu2IISnSe4 (II = Cd and Hg) and Cu2ZnIVSe4 (IV= Ge
and Si) are similar to those in Cu2ZnSnSe4. Therefore, the energy levels of VBMs in Cu2II-IVSe4 do not change so
much compared with those of CZTSe. On the other hand, the energy levels of CBMs of IV ns + Se 4p in Cu2ZnSiSe4
and Cu2ZnGeSe4 become higher than those in Cu2ZnSnSe4, while the energy levels of CBMs in Cu2IISnSe4 become
lower than those in CZTSe.
Metastable Defect Distributions and Spectral Photoresponse of CIGS Devices
Creators: name: Igalson, M.
name: Urbaniak, A.
name: Krysztopa, A.
name: Edoff, M.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Thin Film Solar Cells
CIS and Other (II-VI) Ternary Thin Film Solar Cells

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3436-3441
description: Metastable changes of photovoltaic parameters in baseline CIGS devices are investigated. In order to
gain more insight into origin of these changes induced in particular by the reverse bias stress, quantum efficiency
distribution together with current-voltage chracteristics are investigated with and without presence of blue
illumination absorbed in CdS buffer. We show that photocurrent is affected by two barriers: one located in the
absorber and related to the p+ layer enhanced by reverse bias treatment under elevated temperatures, and second
related to negative charge accumulated most probably at CdS/i-ZnO interface. While the second barrier causes severe
fill factor losses only under red illumination but is easily reduced by blue photons present in white light, the first one
impedes current transport also under full spectrum. The results and simulations performed by using SCAPS software
show the relation between both barriers: the more charge is accumulated in the p+ layer the more detrimental is the
effect of the second barrier.
Effect of Additive and Etchant Concentration in Surface Morphology of Mono-Crystalline Silicon Solar Cells Textured with Non-Alcoholic Chemical Formulations
Creators: name: Wijekoon, K.
name: Kumar, P.
name: Tanner, D.
name: Ponnekanti, H.
name: Gay, C.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2015-2019
description: Surface morphology of p-type Czochralski wafers with a bulk resistivity of 1-5cm was studied by subjecting
them to different texturization processes by using a non-alcoholic chemical etching formulation. Both etchant concentration and
additive concentration was varied and resulting surface morphology was characterized by surface reflection measurements,
Scanning Electron Microscopy and Vertical Scanning Optical Microscopy. Compared to variation in etchant concentration
variation in additive concentration seems to have a prominent effect on surface morphology of textured wafers.
The Selective Boron Doping from Liquid Source BBr3
Creators: name: Frantik, O.
name: Barinka, R.
name: Cech, P.
name: Hladik, J.
name: Poruba, A.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2031-2033
description: The boron diffusion makes pn junction on n-type wafer or BSF (Back Surface Field) for p-type
wafer, essential parts of any solar cell. This paper focuses on different options for boron diffusion processes from liquid
source BBr3 for p-type diffusion on n-type wafers. There are three options to create selective structure of boron diffusion
from liquid source BBr3: masking layers, pre-doping of source wafer or combination. The masking properties of various
dielectric barriers were verified by four point probe sheet resistance mapping; also ECV technique was applied for
evaluation of boron concentration profile.
The first method is based on masking layer deposited on surface. This method is more complex, because the
process has many steps (application of a masking layer, laser structuring or etching paste printing, boron diffusion and
finally removal of the masking layer). Two different masking layers (PECVD SiNX or thermal oxide) were tested for this
process. Masking layers have different thicknesses to determine the smallest possible masking layer. The PECVD nitride
has better masking properties than the high temperature oxide. Etching properties of masking layers after boron diffusion
were investigated.
The second method is based on pre-doping the source wafers. This method has many advantages, for example:
the whole process can be done in one step and finally BSG (Boron Silicate Glass) grown during diffusion process is
easily removable. In this case “the target wafer” is in direct contact with the source pre-diffused wafer during the high
temperature process (drive-in step). Different shapes of p-type doped areas could be created by this way.
The third method comes from combination of previous methods. The masking layer is at first formed on the wafer
and diffusion in predefined area is taken placed from pre-diffused wafers.
Analysis of knowledge and awareness level of Open Science in the Republic of Moldova
Creators: name: Țurcan, Nelly
name: Cuciureanu, Gheorghe
name: Cujba, Rodica
name: Lupu, Viorica
name: Cheradi, Natalia
name: Cojocaru, Igor
Publisher: name: Zenodo
Year: 2023
Subjects: survey, Republic of Moldova, Open Science, national Open Science policies, institutional Open Science policies, Open Access, open research data, Open Science practices

description: The deliverable presents the results of the survey "Attitudes towards Open Science", carried out within the project "Boosting engagement of the Republic of Moldova in Open Science: methodological and applied support" (cod 21.70105.40ȘD), between October 14 and December 6, 2021. 685 researchers, scientific and didactic staff, PhD students, librarians, R&D decision makers and other stakeholders participated in the survey. The final sample comprised n = 532 participants. The highest participation rate in the survey (79.89%) belongs to representatives of higher education institutions, followed by research institutions (16.54%). The survey participants represent all fields of research, about half are from the field of social and economic sciences (26.88%) and humanities (21.81%). The survey showed that 85.15% of respondents are familiar with the concept and practices of Open Science, and more than 50% of participants practice and promote Open Science. Among the survey participants, only 14.10% of respondents are not at all familiar with the concept and practices of Open Science. The survey data ascertains the motivation from the scientific community regarding the practice of Open Science, especially regarding Open Access to publications, open educational resources, increased visibility, access to research infrastructures, etc. At the same time, several problems and concerns were noted, especially related to the correct use of research data, copyright, abusive use of research results, lower quality, etc. The participants of the survey believe that the existence of a Policy or Strategy at the national level regarding Open Science is important (95.13%). The most important key aspects to be considered by a National Open Science Policy or Strategy that were selected by the respondents are the same as for an institutional policy or strategy: Open Access to Publications, Open Access to Research Data and Access open to educational resources. The majority of survey participants (67.85%) believe that Open Science is an opportunity for science.
Pilot Line Processing of Silicon Wafer Solar Cells Using Industry-Scale Equipment
Creators: name: Boreland, M.
name: Aberle, A.G.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1996-2000
description: The scale of photovoltaic production in Asia has increased dramatically in recent years, creating an
increasing need for locally based R&D support at industrial scale. To meet this growing R&D demand in Asia, the
Solar Energy Research Institute of Singapore (SERIS) was established in April 2008 to conduct industry-oriented
R&D as well as use-inspired basic research in the field of solar energy conversion. A cornerstone of SERIS’ strategy
in silicon wafer solar cell R&D is a pilot line based on industrial equipment, recognising that solar R&D must be able
to perform at an industrially relevant scale. SERIS has worked closely with industrial equipment vendors to build a
pilot line that combines the flexibility required for R&D with the throughputs and process robustness required for
production. By utilising industrial equipment SERIS is able to conduct industry relevant research with a direct
roadmap to production, by rapid prototyping of novel solar cell structures and processes using production-proven
tooling. The approach removes the need to migrate processes from lab-scale tools to the production environment.
The SERIS industrial pilot line for silicon wafers has capabilities for standard p-type Al-BSF cells, selective-emitter
cells, n-type cells, heterojunction cells and others, with access to a suite of state-of-the-art PV characterisation tools.
Moreover, the line focuses not only on device oriented R&D, but also enables R&D programmes with equipment
manufacturers to test new process tool prototypes and extend the capabilities of existing tool designs. This paper
presents an overview of the SERIS industrial pilot line design and capabilities as well as selected solar cell results
obtained on the line.
The Impact of Sodium on Ion-Beam Induced Defects in CIGS Absorber Films
Creators: name: Zachmann, H.
name: Puttnins, S.
name: Daume, F.
name: Rahm, A.
name: Otte, K.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Thin Film Solar Cells
CIS and Other (II-VI) Ternary Thin Film Solar Cells

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3382-3385
description: The ion beam assisted low temperature deposition of Cu(In,Ga)Se2 (CIGS) thin film solar cells on
flexible polyimide substrate is proven to yield high solar cell efficiencies of currently 14.1 %. For selenium ion
energies above a certain value the solar cell efficiency decreases due to ion beam induced defect production. The
influence of the selenium ion energy on the activation energy and the spatial distribution of electrically active defects
has been shown previously. However higher ion energy should enhance the growth conditions of the CIGS layer
because of an enhanced mobility of the adatoms and lead to a reduced roughness, less tension and increasing
adhesion of the absorber layer to the back contact. These advantages of higher selenium ion energy can only be used
if a mechanism is found to passivate the produced electrically active defects.
It is widely believed that sodium plays a key role in the defect passivation in CIGS. Therefore it is assumed that also
for ion beam induced defects a passivation via sodium is possible. It is the purpose of this work to investigate the
influence of sodium on the above mentioned defects produced by energetic selenium ions.
Selective Laser Ablation of Thin Dielectrics on Solar Cells
Creators: name: Diez, M.
name: Letsch, A.
name: Wütherich, T.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1080-1088
description: We conducted experiments on selective laser ablation of thin dielectric films on mono-crystalline
wafers. Besides varying laser parameters we studied the influence of different coating thicknesses on the ablation
process itself. The dielectrics of interest are silicon nitride and silicon oxide. Laser sources with different wavelengths
and pulse durations varying by five orders of magnitude are employed and compared. We found that the sole
influence of coating thickness is the optical reflection, and thus, the ablation process is found to be independent of the
volume of the dielectric. The depth of the ablated spots is detected to be always bigger than the thickness of the
dielectric coating, for both, picosecond- and nanosecond-laser ablation. Our studies revealed that the transition from
the so called ultra-fast and non-thermal picosecond ablation regime to the slower, melt-dominated nanosecond
ablation regime is not abrupt but smooth as we verified by analyzing the ablation behavior at 2 ns. Different
characterization methods, such as Secco etching and X-ray photoelectron spectroscopy provide an understanding of
the laser induced damage to the underlying silicon. Pulse overlap and laser wavelength have an enormous influence
on the probability of generating crystal defects and dislocations in silicon. We conclude that a totally damage-free
laser ablation process is not possible, not even for ultra-short pulse laser ablation.
Characterisation of Over 21% Efficient Silicon Heterojunction Cells Developed at Roth & Rau Switzerland
Creators: name: Bätzner, D.
name: Andrault, Y.
name: Andreetta, L.
name: Buechel, A.
name: Frammelsberger, W.
name: Guerin, C.
name: Holm, N.
name: Lachenal, D.
name: Meixenberger, J.
name: Papet, P.
name: Rau, B.
name: Strahm, B.
name: Wahli, G.
name: Wuensch, F.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Silicon Solar Cell Characterisation and Modelling

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1073-1075
description: The goal to achieve grid parity for photovoltaics in the near future is stimulating the development of high
efficiency solar cell technologies which has spark off strong activities in crystalline silicon technologies especially in the
silicon heterojunction solar cell development in the past yielding many devices that have been reported beyond 20%
efficiency in different laboratories and a new record efficiency of 23.7%. Heterojunction silicon solar cells show
interesting and promising properties which are distinct from those of standard crystalline silicon solar cells due to the
combination of thin film and crystalline cell technologies. This paper focuses on device properties of the heterojunction
technology (HJT) cell developed at Roth & Rau Switzerland such as temperature and irradiation dependent performance
and cell stability under accelerated stress tests. The results demonstrate an improved energy yield of the Roth & Rau HJT
cells that is to be expected under realistic operation conditions combined with excellent cell efficiencies of up to 21.9%.
Gene Ontology: Pitfalls, Biases, Remedies
Creators: name: Gaudet, Pascale
name: Dessimoz, Christophe
Publisher: name: arXiv
Year: 2016
Subjects: subject: Genomics (q-bio.GN)
subject: FOS: Biological sciences

description: The Gene Ontology (GO) is a formidable resource but there are several considerations about it that are essential to understand the data and interpret it correctly. The GO is sufficiently simple that it can be used without deep understanding of its structure or how it is developed, which is both a strength and a weakness. In this chapter, we discuss some common misinterpretations of the ontology and the annotations. A better understanding of the pitfalls and the biases in the GO should help users make the most of this very rich resource. We also review some of the misconceptions and misleading assumptions commonly made about GO, including the effect of data incompleteness, the importance of annotation qualifiers, and the transitivity or lack thereof associated with different ontology relations. We also discuss several biases that can confound aggregate analyses such as gene enrichment analyses. For each of these pitfalls and biases, we suggest remedies and best practices.
description: to appear in forthcoming book "The Gene Ontology Handbook" (Springer Humana)
Near-Infrared Polarization Source Catalog of the Northeastern Regions of the Large Magellanic Cloud
Creators: name: Kim, Jaeyeong
name: Jeong, Woong-Seob
name: Pak, Soojong
name: Park, Won-Kee
name: Tamura, Motohide
Publisher: name: arXiv
Year: 2015
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: FOS: Physical sciences

description: We present a near-infrared band-merged photometric and polarimetric catalog for the 39$\arcmin$ $\times$ 69$\arcmin$ fields on the northeastern part of the Large Magellanic Cloud (LMC), which were observed using SIRPOL, an imaging polarimeter of the InfraRed Survey Facility (IRSF). This catalog lists 1,858 sources brighter than 14 mag at $H$ band with polarization signal-to-noise ratio greater than three in the $J$, $H$, or $K_s$ bands. Based on the relationship between the extinction and the polarization degree, we argue that the polarization mostly arises from dichroic extinctions caused by local interstellar dust in the LMC. This catalog allows us to map polarization structures to examine the global geometry of the local magnetic field, and to show a statistical analysis of polarization of each field to understand its polarization properties. At the selected fields with coherent polarization position angles, we estimate magnetic field strengths in the range of 3$-$25 $μ$G using the Chandrasekhar-Fermi method. This implies the presence of large-scale magnetic fields on a scale of around one hundred parsecs. When comparing mid and far-infrared dust emission maps, we confirmed that the polarization patterns are well aligned with molecular clouds around the star-forming regions.
description: 36 pages, 12 figures All figures are converted to jpeg type
Analysis and Evaluation of Methods for Automated Wafer Handling in High Volume Manufacturing
Creators: name: Fischmann, C.
name: Giesen, T.
name: Böttinger, F.
name: Wertz, R.
name: Ehm, A.
name: Böffert, N.
name: Goh, D.
name: Verl, A.
name: Kunz, M.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1107-1110
description: Reduction in wafer and solar cell thicknesses today creates stricter requirements and conditions for
automated handling processes. To remain competitive in the production of silicon based photovoltaic cells, it is
necessary to optimize these processes or even develop new ones. For most of the automated processes, gripping as a
handling technique is of vital importance. Numerous factors and aspects have to be taken into consideration in order
to deliver the best productivity, i.e. short cycle times and low damage rates. Today, there is a wide variety of grippers
available, working with different principles in these processes along the entire production line. With regards to the
developments mentioned above, this paper is aimed towards the analysis of the gripping forces of various state-ofthe-
art grippers and prototypes during the handling process. In addition a method for the evaluation of the vibration
behavior of substrates during a pick-and-place operation will be presented.
Bivariate hierarchical Hermite spline quasi--interpolation
Creators: name: Bracco, Cesare
name: Giannelli, Carlotta
name: Mazzia, Francesca
name: Sestini, Alessandra
Publisher: name: arXiv
Year: 2016
Subjects: subject: Numerical Analysis (math.NA)
subject: FOS: Mathematics

description: Spline quasi-interpolation (QI) is a general and powerful approach for the construction of low cost and accurate approximations of a given function. In order to provide an efficient adaptive approximation scheme in the bivariate setting, we consider quasi-interpolation in hierarchical spline spaces. In particular, we study and experiment the features of the hierarchical extension of the tensor-product formulation of the Hermite BS quasi-interpolation scheme. The convergence properties of this hierarchical operator, suitably defined in terms of truncated hierarchical B-spline bases, are analyzed. A selection of numerical examples is presented to compare the performances of the hierarchical and tensor-product versions of the scheme.
Numerical simulation of liquid jet breakup using smoothed particle hydrodynamics (SPH)
Creators: name: Pourabdian, Majid
name: Omidvar, Pourya
name: Morad, Mohammad Reza
Publisher: name: arXiv
Year: 2016
Subjects: subject: Fluid Dynamics (physics.flu-dyn)
subject: FOS: Physical sciences

description: In this paper, breakup of liquid jet is simulated using smoothed particle hydrodynamics (SPH) which is a meshless Lagrangian numerical method. For this aim, flow governing equations are discretized based on SPH method. In this paper, SPHysics open source code has been utilized for numerical solutions. Therefore, the mentioned code has been developed by adding the surface tension effects. The proposed method is then validated using dam break with obstacle problem. Finally, simulation of twodimensional liquid jet flow is carried out and its breakup behavior considering one-phase flow is investigated. Length of liquid breakup in Rayleigh regime is calculated for various flow conditions such as different Reynolds and Weber numbers and the results are validated by an experimental correlation. The whole numerical solutions are accomplished for both Wendland and cubic spline kernel functions and Wendland kernel function gave more accurate results. The results are compared to MPS method for inviscid liquid as well. The accomplished modeling showed that smoothed particle hydrodynamics (SPH) is an efficient method for simulation of liquid jet breakup phenomena.
description: 12 pages
Photodoping and Band Offsets in CIGS Solar Cells with Varied Buffer Layers
Creators: name: Riedel, I.
name: Ohland, J.
name: Neerken, J.
name: Keller, J.
name: Parisi, J.
name: Hammer, M.S.
name: Kiowski, O.
name: Spiering, S.
Publisher: name: WIP-Munich
Year: 2010
Subjects: Thin Film Solar Cells
CIS and Other (II-VI) Ternary Thin Film Solar Cells

description: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3390-3394
description: CIGS solar cells with different buffer layers, CdS, Zn(O,S), In2S3, were investigated by means of
spectral response measurements and temperature dependent current voltage profiling for specific characteristics that
reflect the band line up at the heterojunction. The devices were identically stabilized for optimal device performance.
We did not find significant indication of light induced alterations of the conduction band offset at the buffer/CIGS
interface. In contrast to our expectations neither a crossover of the dark and light current-voltage characteristics nor
impeded carrier collection under restricted broadband illumination (>615 nm) could be observed in any of the
heterojunction devices. However, we found clear indications for a secondary barrier which limits the current
injection in the forward voltage bias regime. This so-called rollover effect shows up in different shapes depending on
the type of buffer material used to establish the heterojunction. We hence relate the apparent barrier to the front of
the device rather than to a barrier formed at the back contact. From a qualitative evaluation of the temperature
progression of the injection regime we found the smallest barrier for the In2S3-based sample and the strongest
limitation was found for the device with wide band gap Zn(O,S). To identify the physical origin and the location of
the injection barrier further experiments and simulations are underway.
Letter from Mary Butts and Gabriel Atkin to Douglas Goldring, January-February 1932
Creators: name: Atkin, Gabriel, 1897-1937
name: Butts, Mary, 1890-1937
Publisher: name: University of Victoria Libraries
Year: 2020
Subjects: subject: Atkin, Gabriel, 1897-1937
subject: Goldring, Douglas, 1887-1960
valueUri: http://id.worldcat.org/fast/1798259
subject: Goldring, Malin
subject: Butts, Mary, 1890-1937
valueUri: http://id.worldcat.org/fast/144414
subject: Households
valueUri: http://id.worldcat.org/fast/962162
subject: Places referenced (in letter): England--Cornwall--Sarah’s Well (Sennen Cove); England--Penzance; England--Cornwall--Land’s End; England--Cornwall--Sennen Schools; England--Cornwall--Sennen cliff; England--Cornwall--Sennen--Post Office
subject: Topics referenced (in letter): Domestic life
subject: People referenced (in letter): Butts, Mary, 1890-1937; Goldring, Douglas, 1887-1960; Atkin, Gabriel, 1897-1937; Golding, Malin; Mr Roberts

description: Mary Butts and Gabriel Atkin write to Douglas Goldring regarding the writing room in Sarah’s Well (Sennen Cove) and how to get there . Sent from (location): England--Cornwall--Sarah’s Well (Sennen Cove)
Über die technische Revolution und ihre Konsequenzen für das sittliche und politische Handeln
Creators: name: Ellul, Jacques
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 3 Nr. 6/7 (1967): Concilium: Internationale Zeitschrift für Theologie, Band 3, Heft 6/7
Information Theoretic Caching: The Multi-User Case
Creators: name: Lim, Sung Hoon
name: Wang, Chien-Yi
name: Gastpar, Michael
Publisher: name: arXiv
Year: 2016
Subjects: subject: Information Theory (cs.IT)
subject: FOS: Computer and information sciences

description: In this paper, we consider a cache aided network in which each user is assumed to have individual caches, while upon users' requests, an update message is sent though a common link to all users. First, we formulate a general information theoretic setting that represents the database as a discrete memoryless source, and the users' requests as side information that is available everywhere except at the cache encoder. The decoders' objective is to recover a function of the source and the side information. By viewing cache aided networks in terms of a general distributed source coding problem and through information theoretic arguments, we present inner and outer bounds on the fundamental tradeoff of cache memory size and update rate. Then, we specialize our general inner and outer bounds to a specific model of content delivery networks: File selection networks, in which the database is a collection of independent equal-size files and each user requests one of the files independently. For file selection networks, we provide an outer bound and two inner bounds (for centralized and decentralized caching strategies). For the case when the user request information is uniformly distributed, we characterize the rate vs. cache size tradeoff to within a multiplicative gap of 4. By further extending our arguments to the framework of Maddah-Ali and Niesen, we also establish a new outer bound and two new inner bounds in which it is shown to recover the centralized and decentralized strategies, previously established by Maddah-Ali and Niesen. Finally, in terms of rate vs. cache size tradeoff, we improve the previous multiplicative gap of 72 to 4.7 for the average case with uniform requests.
description: Submitted to IEEE Trans. Inf. Theory and presented in part at ITA 2016. 43 pages, 8 figures
Primer on the Gene Ontology
Creators: name: Gaudet, Pascale
name: Škunca, Nives
name: Hu, James C.
name: Dessimoz, Christophe
Publisher: name: arXiv
Year: 2016
Subjects: subject: Genomics (q-bio.GN)
subject: FOS: Biological sciences

description: The Gene Ontology (GO) project is the largest resource for cataloguing gene function. The combination of solid conceptual underpinnings and a practical set of features have made the GO a widely adopted resource in the research community and an essential resource for data analysis. In this chapter, we provide a concise primer for all users of the GO. We briefly introduce the structure of the ontology and explain how to interpret annotations associated with the GO.
description: to appear in forthcoming book "The Gene Ontology Handbook" (Springer Humana)
Low-end mass function of the Quintuplet cluster
Creators: name: Shin, Jihye
name: Kim, Sungsoo S.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: FOS: Physical sciences

description: The Quintuplet and Arches clusters, which were formed in the harsh environment of the Galactic Center (GC) a few million years ago, have been excellent targets for studying the effects of a star-forming environment on the initial mass function (IMF). In order to estimate the shape of the low-end IMF of the Arches cluster, Shin & Kim devised a novel photometric method that utilizes pixel intensity histograms (PIHs) of the observed images. Here, we apply the PIH method to the Quintuplet cluster and estimate the shape of its low-end IMF below the magnitude of completeness limit as set by conventional photometry. We found that the low-end IMF of the Quintuplet is consistent with that found for the Arches cluster--Kroupa MF, with a significant number of low-mass stars below 1 $M_{\odot}$. We conclude that the most likely IMFs of the Quintuplet and the Arches clusters are not too different from the IMFs found in the Galactic disc. We also find that the observed PIHs and stellar number density profiles of both clusters are best reproduced when the clusters are assumed to be at three-dimensional distances of approximately 100 pc from the GC.
description: 10 pages, 11 figures, To appear in June 2016 issue of MNRAS. arXiv admin note: text overlap with arXiv:1411.3458
High Aspect Ratio Fine Gridline for Front Side Metallization of Industrial Silicon Solar Cells by Direct Printing
Creators: name: Chen, X.
name: Church, K.
name: Yang, H.
name: Cooper, I.B.
name: Rohatgi, A.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1094-1098
description: This work presents a direct printing technology and an enabling tool for patterning high aspect ratio fine gridlines for front side metallization on silicon solar cells. The conductive gridlines were formed by a one-step, non-contact approach at high speeds using a modified screen printable paste. The fired gridline is as small as 40μm wide and more than 30μm tall, which gives an aspect ratio of 0.75 or more. Due to less shading and well maintained gridline current carry capability, the cells with direct printed metallization gridlines showed ~0.5% absolute efficiency increase compared to the screen printing baseline cells. This study also investigated the impact of the direct printed gridlines on Isc, Voc, FF. For the three direct printed Ag gridline counts chosen (63, 87, and 113), the average efficiency was 18.7-18.8% (compared to 18.3% for the screen-printed control). The common efficiencies for each gridline count are seen as a balance of short circuit current (JSC) and fill factor (FF). Cost analysis shows that with 63 direct printed gridlines, the decreased Ag consumption paired with the increase in power output can lead to 20% Ag cost savings.
Neutron Electric Dipole Moment from quark Chromoelectric Dipole Moment
Creators: name: Bhattacharya, Tanmoy
name: Cirigliano, Vincenzo
name: Gupta, Rajan
name: Mereghetti, Emanuele
name: Yoon, Boram
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Lattice (hep-lat)
subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: The connection between a regularization-independent symmetric momentum substraction (RI-$\tilde{\rm S}$MOM) and the $\overline{\rm MS}$ scheme for the quark chromo EDM operators is discussed. A method for evaluating the neutron EDM from quark chromoEDM is described. A preliminary study of the signal in the matrix element using clover quarks on a highly improved staggered quark (HISQ) ensemble is shown.
description: 7 pages, Proceedings of the 33rd International Symposium on Lattice Field Theory (LATTICE2015), Kobe, Japan, 14-18 July 2015
Advanced Alignment Methods for Precise Printing over Selective Emitter in c-Si Solar Cells
Creators: name: Voltan, A.
name: Galiazzo, M.
name: Tonini, D.
name: Casarin, A.
name: Cellere, G.
name: Baccini, A.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Manufacturing Issues and Processing

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1099-1103
description: Significant improvements in c-Si solar cells performance can be achieved acting on the emitter or on the
contact formation side. At the moment an efficiency gain around 0.5-0.6%abs [1] has been demonstrated for Selective
Emitter (SE) cells, mainly due to the improvement of the blue response of the shallow emitter. Nevertheless, in case of
sub-optimal alignment of the printed metal with the deep emitter, the shallow junction depth leads to a significantly
narrower firing process window, consequently causing high contact resistance and poor shunting behavior.
Moreover, after ARC coating the contrast between differently doped areas is poor and often prevents the screen printer
vision system from correctly recognizing the pattern for metal printing alignment. Thus we developed a new equipment
(High Precision Selective Emitter, HPSE) for precise alignment over SE able to guarantee recognition of every SE
pattern and consequent printing repeatability within +/-30 μm without rejections or misalignments. In this work results
from experimental investigations and mass production are reported and discussed, including also comparison with
standard alignment methods and further feasible applications.
Stability Analysis of Nonlinear Time-Varying Systems by Lyapunov Functions with Indefinite Derivatives
Creators: name: Zhou, Bin
Publisher: name: arXiv
Year: 2015
Subjects: subject: Dynamical Systems (math.DS)
subject: FOS: Mathematics

description: This paper is concerned with stability analysis of nonlinear time-varying systems by using Lyapunov function based approach. The classical Lyapunov stability theorems are generalized in the sense that the time-derivative of the Lyapunov functions are allowed to be indefinite. The stability analysis is accomplished with the help of the scalar stable functions introduced in our previous study. Both asymptotic stability and input-to-state stability are considered. Particularly, for asymptotic stability, several concepts such as uniform and non-uniform asymptotic stability, and uniform and non-uniform exponential stability are studied. The effectiveness of the proposed theorems is illustrated by several numerical examples.