title: ÐÑÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ Ð¾Ñ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐµÐº ÑÐ°Ð¿ÑÐ¸ÑÐ° ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÑÐ½Ð¾Ðº GaN, Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ HVPE
title: Ð¼Ð°Ð³Ð¸ÑÑÐµÑÑÐºÐ°Ñ Ð´Ð¸ÑÑÐµÑÑÐ°ÑÐ¸Ñ
titleType: Subtitle
Creators: name: ÐÐ¸Ð½ÑÑÐº, ÐÐ½ÑÐ¾Ð½
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2016
Subjects: ÐÐ¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÐµ ÑÑÑÑÐºÑÑÑÑ
ÐÐ¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÐµ Ð¿Ð»ÐµÐ½ÐºÐ¸
ÐÐ°Ð»Ð»Ð¸Ð¹, Ð½Ð¸ÑÑÐ¸Ð´Ñ
ÐÐµÐ½ÐµÑÐ°ÑÐ¾ÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ

description: Ð ÑÐ¾Ð²ÑÐµÐ¼ÐµÐ½Ð½Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐµ ÑÐ´ÐµÐ»ÑÐµÑÑÑ Ð½ÐµÐ¼Ð°Ð»Ð¾ Ð²Ð½Ð¸Ð¼Ð°Ð½Ð¸Ñ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÑÐ¼ ÑÐ¾ÑÑÐ° ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ. ÐÐµÐ¼Ð°Ð»Ð¾Ð²Ð°Ð¶Ð½ÑÐ¼ ÑÐ²Ð»ÑÐµÑÑÑ Ð¸Ð·ÑÑÐµÐ½Ð¸Ðµ ÑÐ¿Ð¾ÑÐ¾Ð±Ð¾Ð² Ð¾Ð±ÑÐ°Ð±Ð¾ÑÐºÐ¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð² Ð¿Ð¾ÑÐ»Ðµ Ð·Ð°Ð²ÐµÑÑÐµÐ½Ð¸Ñ Ð²ÑÐµÑ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÑÐ¾ÑÑÐ°, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¾ÑÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² Ð¾Ñ ÑÐ¾ÑÑÐ¾Ð²ÑÑ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐµÐº. Ð Ð½Ð°ÑÑÐ¾ÑÑÐµÐµ Ð²ÑÐµÐ¼Ñ Ð¸Ð·Ð²ÐµÑÑÐ½Ð¾ Ð½ÐµÐ¼Ð°Ð»Ð¾ ÑÐ¿Ð¾ÑÐ¾Ð±Ð¾Ð² Ð¾ÑÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ ÑÑÑÑÐºÑÑÑ Ð¾Ñ ÑÐ¾ÑÑÐ¾Ð²ÑÑ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐµÐº, Ð½Ð° ÐºÐ¾ÑÐ¾ÑÑÑ Ð¾Ð½Ð¸ Ð±ÑÐ»Ð¸ Ð²ÑÑÐ°ÑÐµÐ½Ñ. Ð Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÐµ Ð±ÑÐ´ÐµÑ ÑÐ°ÑÑÐ¼Ð¾ÑÑÐµÐ½ Ð¼ÐµÑÐ¾Ð´ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð³Ð¾ Ð¾ÑÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð¿Ð»ÑÐ½Ð¾Ðº GaN Ð¾Ñ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸ ÑÐ°Ð¿ÑÐ¸ÑÐ° Ð¿ÑÑÑÐ¼ Ð¾Ð±ÑÑÑÐµÐ»Ð° Ð¸Ð¼Ð¿ÑÐ»ÑÑÐ½ÑÐ¼ CO2-Ð»Ð°Ð·ÐµÑÐ¾Ð¼ ÑÐ¾ ÑÑÐ¾ÑÐ¾Ð½Ñ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð¿Ð»ÑÐ½ÐºÐ¸ Ð¸ Ð´Ð°Ð»ÑÐ½ÐµÐ¹ÑÐµÐ³Ð¾ "Ð¿ÑÐ¸ÐºÐ»ÐµÐ¸Ð²Ð°Ð½Ð¸Ñ" Ð¾Ð±ÑÐ°Ð·ÑÐ° Ð¾Ð±Ð»ÑÑÐµÐ½Ð½Ð¾Ð¹ ÑÑÐ¾ÑÐ¾Ð½Ð¾Ð¹ Ðº Ð²ÑÐµÐ¼ÐµÐ½Ð½Ð¾Ð¹ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ Ð¸ Ð¾ÑÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð¾Ñ ÑÐ¾ÑÑÐ¾Ð²Ð¾Ð¹ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸. ÐÑÐ´ÑÑ ÑÐ°ÑÑÐ¼Ð¾ÑÑÐµÐ½Ñ Ð¾ÑÐ½Ð¾Ð²Ð½ÑÐµ Ð½ÑÐ°Ð½ÑÑ Ð¸ Ð¿ÑÐµÐ¸Ð¼ÑÑÐµÑÑÐ²Ð° Ð´Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¼ÐµÑÐ¾Ð´Ð° Ð¿Ð¾ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ñ Ñ ÑÐ°Ð½ÐµÐµ Ð¸Ð·ÑÑÐµÐ½Ð½ÑÐ¼Ð¸ Ð¼ÐµÑÐ¾Ð´Ð°Ð¼Ð¸ ÑÐ°ÐºÐ¸Ð¼Ð¸ ÐºÐ°Ðº ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ Ð¾ÑÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ Ð¸ Â«ÑÐ¼Ð½ÑÐ¹ ÑÐµÐ·Â». ÐÑÐ½Ð¾Ð²Ð½ÑÐ¼ ÐºÑÐ¸ÑÐµÑÐ¸ÑÐ¼ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ñ Ð±ÑÐ»Ð¾ ÐºÐ°ÑÐµÑÑÐ²Ð¾ Ð¾ÑÐ´ÐµÐ»ÑÐµÐ¼Ð¾Ð¹ Ð¿Ð»ÑÐ½ÐºÐ¸ GaN.
description: In modern microelectronics paid much attention to the peculiarities of the growth of different semiconductor heterostructures. It is also important to study ways of processing the submissions received after the completion of all the processes of growth, as well as the separation of the samples from the growth substrate. At the present time we know many ways to separation of semiconductor substrates on which they were grown. In this work we'll consider a method of laser lift-off of GaN films on sapphire substrates by pulsed CO2-laser from the film surface and further "gluing" of the sample exposed to the side of the temporary substrate and separated from the growth substrate. Basic nuances and advantages will be considered this method as compared to the previously studied methods such as chemical lift-off and the "smart cut". The most basic comparison criteria was the quality detachable film of GaN.