cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Optimal Dividend Payout Model with Risk Sensitive Preferences
Creators: name: Bäuerle, Nicole
name: Jaśkiewicz, Anna
Publisher: name: arXiv
Year: 2016
Subjects: subject: Probability (math.PR)
subject: FOS: Mathematics

description: We consider a discrete-time dividend payout problem with risk sensitive shareholders. It is assumed that they are equipped with a risk aversion coefficient and construct their discounted payoff with the help of the exponential premium principle. This leads to a non-expected recursive utility of the dividends. Within such a framework not only the expected value of the dividends is taken into account but also their variability. Our approach is motivated by a remark in Gerber and Shiu (2004). We deal with the finite and infinite time horizon problems and prove that, even in general setting, the optimal dividend policy is a band policy. We also show that the policy improvement algorithm can be used to obtain the optimal policy and the corresponding value function. Next, an explicit example is provided, in which the optimal policy of a barrier type is shown to exist. Finally, we present some numerical studies and discuss the influence of the risk sensitive parameter on the optimal dividend policy.
Entanglement Enhanced Thermometry in the Detection of the Unruh Effect
Creators: name: Tian, Zehua
name: Wang, Jieci
name: Jing, Jiliang
name: Dragan, Andrzej
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: General Relativity and Quantum Cosmology (gr-qc)
subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: We show how the use of entanglement can enhance the precision of the detection of the Unruh effect with an accelerated probe. We use the Unruh-DeWitt model of a two-level atom interacting relativistically with a quantum field and treat the atom as an open quantum system to derive the master equation governing its evolution. By means of quantum state discrimination, we detect the accelerated motion of the atom by examining its time evolving state. It turns out that the optimal strategy for the detection of the Unruh effect, to which the accelerated atom is sensitive, involves letting the atom-thermometer equilibrate with the thermal bath. However, introducing initial entanglement between the detector and an external degree of freedom leads to an enhancement of the sensitivity of the detector. Also, the maximum precision is attained within finite time, before equilibration takes place.
description: 9 pages, 3 figures. To match with the published version
UniSAFE: University of Namur - institutional policy to address gender-based violence
Creators: name: Andreska, Zuzana
name: Huck, Averil
name: Linkova, Marcela
Publisher: name: Zenodo
Year: 2022
Subjects: Gender based-violence
policy framework
gender+
institutional policy

description: UniSAFE has mapped the policies and measures to address and combat GBV in 48 universities and research organisations in 15 European countries. For each institution, the team created Vignettes which present national context, institutional policy, training, role in knowledge production, content of the policy, institutional procedure and implementation of the policy.
Application of Modal Filtering to a Spectral Difference Method
Creators: name: Glaubitz, Jan
name: Öffner, Philipp
name: Sonar, Thomas
Publisher: name: arXiv
Year: 2016
Subjects: subject: Numerical Analysis (math.NA)
subject: FOS: Mathematics
subject: 65M12, 65M70, 42C10

description: We adapt the spectral viscosity (SV) formulation implemented as a modal filter to a Spectral Difference Method (SD) solving hyperbolic conservation laws. In the SD Method we use selections of different orthogonal polynomials (APK polynomials). Furthermore we obtain new error bounds for filtered APK extensions of smooth functions. We demonstrate that the modal filter also depends on the chosen polynomial basis in the SD Method. Spectral filtering stabilizes the scheme and leaves weaker oscillations. Hence, the selection of the family of orthogonal polynomials on triangles and their specific modal filter possesses a positive influence on the stability and accuracy of the SD Method. In the second part, we initiate a stability analysis for a linear scalar test case with periodic initial condition to find the best selection of APK polynomials and their specific modal filter. To the best of our knowledge, this work is the first that gives a stability analysis for a scheme with spectral filtering. Finally, we demonstrate the influence of the underlying basis of APK polynomials in a well-known test case.
description: Updated version
Surface Texturing for Silicon Solar Cell Application Using ICP-PECVD Plasma Technique
Creators: name: Frey, A.
name: Engelhardt, J.
name: Ebser, J.
name: Hahn, G.
name: Terheiden, B.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 776-778
description: This work is focused on plasma-induced texturing using a single chamber inductively coupled plasma –
plasma-enhanced chemical vapour deposition (ICP-PECVD) lab-tool. Plasma treatment using pure NF3 under low
pressure conditions leads to high etch rates (1.2–1.4 μm/min) enabling fast surface texturing. 6 min plasma treatment
on wafers with saw damage decreases the effective reflectivity Reff from 31% to 13.7% without anti-reflection
coating (ARC), which is lower than the value for a common alkaline surface texture. For planar (KOH pre-treated)
samples Reff can be reduced from 38% to 17.8% after 4 min plasma treatment. Lifetime measurements reveal a postprocess
lifetime of 250 μs without any further damage removal etching (DRE). This refers to a low density of
plasma-induced defects. Furthermore, it is demonstrated that plasma textured surfaces enable excellent contact
formation for screen-printing of Ag/Al pastes on boron emitters leading to low specific contact resistances below
5 mΩcm2 even for low set peak firing temperatures (TSet < 800°C). These values are much lower than values realized
with a common isotropic wet acidic etch and slightly lower than values realized with a common alkaline surface
texture, leading to reduced power losses due to lowered series resistance. In addition, the specific contact resistance
on POCl3 emitters by screen-printing of commercial available Ag pastes is determined to be below 1 mΩcm2, nearly
independent of the set peak firing temperature.
Quantum Field Theory of Interacting Dark Matter/Dark Energy: Dark Monodromies
Creators: name: D'Amico, Guido
name: Hamill, Teresa
name: Kaloper, Nemanja
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Theory (hep-th)
subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: General Relativity and Quantum Cosmology (gr-qc)
subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: We discuss how to formulate a quantum field theory of dark energy interacting with dark matter. We show that the proposals based on the assumption that dark matter is made up of heavy particles with masses which are very sensitive to the value of dark energy are strongly constrained. Quintessence-generated long range forces and radiative stability of the quintessence potential require that such dark matter and dark energy are completely decoupled. However, if dark energy and a fraction of dark matter are very light axions, they can have significant mixings which are radiatively stable and perfectly consistent with quantum field theory. Such models can naturally occur in multi-axion realizations of monodromies. The mixings yield interesting signatures which are observable and are within current cosmological limits but could be constrained further by future observations.
description: 24 pages LaTeX, 13 figures, v3: typos corrected, more comments added; published in PRD
High Efficiency Silicon Solar Cells with a Thin Base
Creators: name: Akhmedov, F.A.
name: Kagan, M.B.
name: Nekrasov, V.A.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 724-728
description: In this work we present manufacturing techniques and results of the main parameters of high efficiency silicon solar cells with thin (~ 15 μm) base. The structure of the solar cell with a thin base was created by using epitaxial layers grown on low-resistivity substrate. It is shown that the reduction of base thickness of the solar cell allows to reduce the overall thickness of the device without any noticeable reduction of the efficiency of the cell and also this allows to create devices resistant to space radiation.
An SLC-type $e^{+}e^{-}/γγ$ facility at a Future Circular Collider
Creators: name: Belusevic, Radoje
Publisher: name: arXiv
Year: 2016
Subjects: subject: Accelerator Physics (physics.acc-ph)
subject: High Energy Physics - Experiment (hep-ex)
subject: FOS: Physical sciences

description: It is proposed to place the arcs of an SLC-type facility inside the tunnel of a Future Circular Collider (FCC). Accelerated by a linear accelerator (linac), electron and positron beams would traverse the bending arcs in opposite directions and collide at centre-of-mass energies considerably exceeding those attainable at circular $e^{+}e^{-}$ colliders. The proposed SLC-type facility would have the same luminosity as a conventional two-linac $e^{+}e^{-}$ collider. Using an optical free-electron laser, the facility could be converted into a $γγ$ collider. A superconducting L-band linac at the proposed facility may form a part of the injector chain for a 100-TeV proton collider in the FCC tunnel. The whole accelerator complex would serve as a source of $e^{+}e^{-}$, $γγ$, $pp$ and $ep$ interactions. The L-band linac could also be used to produce high-intensity neutrino, kaon and muon beams for fixed-target experiments, as well as X-ray free-electron laser (XFEL) photons for applications in material science and medicine.
description: 16 pages, 7 figures. arXiv admin note: substantial text overlap with arXiv:1208.4956, arXiv:0810.3187
Innovative Approach to Simultaneous Laser-Doping and Grooving for Improved Plated-Copper Metallisation
Creators: name: Wang, S.
name: Mai, L.
name: Ciesla, A.
name: Hameiri, Z.
name: Chan, C.
name: Hallam, B.
name: Sugianto, A.
name: Chong, C.M.
name: Ji, J.
name: Shi, Z.
name: Wenham, S.R.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 675-678
description: Both Buried Contact Solar Cells (BCSC) and Laser Doped Selective Emitter (LDSE) solar cells have
shown great success in large-scale manufacturing. Recent studies show that plated contacts can be more durable than
screen-printed contacts. A new concept of laser doping with grooving is introduced to form narrow grooves with
heavily doped walls in a simultaneous step with the metal contact subsequently formed by plating. This process
capitalizes on the benefits of both BCSC and LDSE cells. The width of the groove is only about three to five microns.
The narrow width and corresponding steep walls of the groove make it possible to deposit the antireflection coating
(ARC) after the laser grooving process such that the groove walls remain uncovered to allow nucleation of
subsequent metal plating. Formation of laser-induced defects is minimized because thermal expansion mismatch
between the ARC and silicon is avoided during the laser doping process. This structure leads to greatly enhanced
adhesion of the plated contact due to it being buried underneath the silicon (Si) surface.
TCO Workfunction in N-Silicon Oxide Emitter – c-Si (P) Heterojunction Solar Cell: An Open Issue
Creators: name: Serenelli, L.
name: Izzi, M.
name: Mangiapane, P.
name: Salza, E.
name: Tucci, M.
name: Della Noce, M.
name: Usatii, I.
name: Bobeico, E.
name: Mercaldo, L.V.
name: Lancellotti, L.
name: Delli Veneri, P.
name: Caputo, D.
name: De Cesare, G.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 700-703
description: The amorphous/crystalline silicon heterojunction solar cells have largely demonstrated to be high efficiency capable.
Despite the highest efficiency cells are based on high quality n-type c-Si absorber, the p-type hold more than 90% of the
world silicon solar cell market, so it seems important to improve device and cost efficiency using p-type substrates. An
issue of is related to the amorphous layer absorbance so different materials have been studied and tested as replacing
emitter to obtain a gain in terms of transmittance, conductivity and Jsc. We have adopted a different and wider bandgap
emitter based on silicon oxide, n-SiOx. A central role in this type of structure is played from the chosen TCO
workfunction, whose value affects strongly the heterojunction’s band structure at the emitter interface. RF magnetron
sputtered TCO obtained with different deposition parameters, have been made in order to optimize their use in our
heterojunction solar cell. Numerical simulation on the SiOx HJ, with TCO having proper workfunction value, show
potential efficiency conversion well over the 23%.
The Effect of Front Side Amouphous Silicon Layer Thickness on Rear Emitter Heterojunction Solar Cells
Creators: name: Chen, M.Y.
name: Chang, J.
name: Chen, F.-S.
name: Shieh, W.-C.
name: Shih, Z.-Y.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 645-647
description: Silicon heterojunction (SHJ) solar cell have potential to achieve high efficiencies and rear emitter SHJ solar cell structure was more widely studied. We reported that the effect of n-type hydrogenated amorphous silicon (n a-Si:H) and intrinsic hydrogenated amorphous silicon (i a-Si:H) layer thickness on SHJ solar cell. Minority carrier life time (MCLT) and implied Voc increase with increasing n a-Si:H layer thickness or i a-Si:H layer thickness. Based on MCLT data, surface passivation quality is stronger correlated to i a-Si:H layer thickness rather than n a-Si:H layer thickness. The result show that open-circuit voltage (Voc) increases, whereas fill factor (FF) and short-circuit current density (Jsc) reduces with increasing i a-Si:H layer thickness. The highest cell efficiency can be achieved by optimizing i a-Si:H layer thickness. While n a-Si:H layer thickness is too thin, Voc, Jsc and FF will obviously drop. Comparing with rear emitter SHJ solar cell to front emitter SHJ solar cell, rear emitter SHJ solar cell shows higher efficiency due to higher Jsc and fill factor FF.
Hermitian Yang-Mills metrics on reflexive sheaves over asymptotically cylindrical Kähler manifolds
Creators: name: Jacob, Adam
name: Walpuski, Thomas
Publisher: name: arXiv
Year: 2016
Subjects: subject: Differential Geometry (math.DG)
subject: FOS: Mathematics
subject: 53C07, 14J60, 32Q15

description: We prove an analogue of the Donaldson-Uhlenbeck-Yau theorem for asymptotically cylindrical Kähler manifolds: If $\mathscr{E}$ is a reflexive sheaf over an ACyl Kähler manifold, which is asymptotic to a $μ$-stable holomorphic vector bundle, then it admits an asymptotically translation-invariant protectively Hermitian Yang-Mills metrics (with curvature in $L^2_{\mathrm{loc}}$ across the singular set). Our proof combines the analytic continuity method of Uhlenbeck and Yau [UY86] with the geometric regularization scheme introduced by Bando and Siu [BS94].
description: v3 corrects an error in the proof of the uniform bound on the Neumann-Poincar\'e constant in Proposition 6.1
The Effect of Rear Surface Flatness on the Performance of the Printed-AlOx PERC
Creators: name: Lin, Y.-S.
name: Chen, T.-C.
name: Ku, C.-H.
name: Hu, C.-S.
name: Wen, C.-C.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 665-668
description: This paper addresses the effect of rear surface flatness on the performance of the passivated emitter and rear cell (PERC) with the printed-Aluminum oxide (AlOx). By optimizing the condition of acid polish, a relative increase of 0.63 % in median efficiency was achieved because of a flatter rear surface. Furthermore, an alternative polish approach by using alkaline KOH solution was preliminarily studied for a flatter rear surface. We also demonstrated that further improving the flatness of rear surface by using alkaline polish revealed a relative increase of 0.73 % in cell median efficiency compared to the reference group (by using acid polish). The efficiency increase mainly comes from the Jsc improvement and Voc improvement. Quantum efficiency (QE) analyses indicated that the Jsc improvement mainly attribute to higher passivation quality that account for 52.8 % of the Jsc improvement. Only 25.5 % of the Jsc improvement relates to the reflectance improvement with the alkaline-polished rear surface.
UniSAFE: University of Ghent - institutional policy to address gender-based violence
Creators: name: Andreska, Zuzana
name: Huck, Averil
name: Linkova, Marcela
Publisher: name: Zenodo
Year: 2022
Subjects: Gender based-violence
policy framework
gender+
institutional policy

description: UniSAFE has mapped the policies and measures to address and combat GBV in 48 universities and research organisations in 15 European countries. For each institution, the team created Vignettes which present national context, institutional policy, training, role in knowledge production, content of the policy, institutional procedure and implementation of the policy.
Formation of Silicon Using Solar Furnace
Creators: name: Sato, K.
name: Hatakeyama, K.
name: Kaneko, H.
name: Nishioka, K.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 578-580
description: Silicon was prepared from Shirasu volcanic ash using solar furnace. The solar furnace was composed from two parts; Fresnel lens and reacting furnace. Fresnel lens was used to concentrate sunlight onto the reacting furnace where the sample was put on. The sample was made from a mixture of silica formed using Shirasu volcanic ash and graphite, and placed in the carbon crucible inside the reacting furnace. By using light of sun concentrated with Fresnel lens, the sample was irradiated for 3 hours, and the furnace was left until it cooled down to room temperature. After the cooling process, the sample was mixed and placed in the carbon crucible, and it was irradiated and cooled with the same processes again. All both irradiating and cooling processes were done under argon atmosphere. After the experiment, the sample was evaluated by X-ray diffraction. The sample was found to have produced the Si component.
Educational intervention on critical incidents and their influence on first-year medical students’ view of the profession
Creators: name: Filgueira, Martha Julianne Lima Pires
name: Laisa Viana Barroso Ribeiro
name: Sa, Henrique Luis Do Carmo E
name: Tempski, Patricia
name: De Arruda Martins, Milton
name: Giaxa, Renata Rocha Barreto
Publisher: name: F1000 Research Limited
Year: 2023

description: This work addresses the use of narrative medicine as a means to approach medical students' views of the profession. First, narratives were collected and analyzed. Critical incidents were categorized. Then, we conducted a classroom intervention where the students could share their narratives and discuss critical incidents, followed by a discussion of their perception of the medical profession. Subsequently, we had a group discussion about using narratives in medical education.
Numerical study of the critical phases of the frustrated Z(5) model
Creators: name: Chatelain, Christophe
Publisher: name: arXiv
Year: 2016
Subjects: subject: Statistical Mechanics (cond-mat.stat-mech)
subject: FOS: Physical sciences

description: The phase diagram of the $\mathbb{Z}(5)$ spin model is studied numerically on the square lattice by means of the {\sl Density Matrix Renormalization Group}. In the regime where the two nearest-neighbor couplings have opposite signs, a critical phase, not observed in earlier Monte Carlo simulations, is identified. The new phase diagram is in agreement with predictions made by M. den Nijs [{\sl Phys. Rev. B} {\bf 31}, 266 (1985)] but for the $\mathbb{Z}(7)$ model rather than the $\mathbb{Z}(5)$ one. All critical phases are shown to be compatible with a central charge $c=1$. The magnetization scaling dimension displays however a different behavior in the different critical phases.
description: 20 pages
Progress in the Use of Phosphoric Acid as Dopant Source for Silicon Ribbons
Creators: name: Almeida Silva, J.A.
name: Pereira, J.
name: Costa, I.
name: Brito, M.C.
name: Serra, J.M.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 619-622
description: The sprayed phosphoric acid (SPA) method for n-type silicon ribbons consists on the spraying of silicon
ribbons with a phosphoric acid solution followed by zone melting crystallization in an optical heating furnace. The
dopant concentrations are determined by four-point probe resistivity measurements and the minority carrier lifetimes
are determined by microwave photoconductance decay (μWPCD) measurements. It is observed that using the adequate
phosphoric acid concentration and recrystallization conditions, samples with homogenous dopant distributions suitable
to be used as base material for n-type solar cells can be obtained. μWPCD measurements made on SPA doped samples
yielded lifetime values between 5 and 20 μs.
Tropical Fermat-Weber points
Creators: name: Lin, Bo
name: Yoshida, Ruriko
Publisher: name: arXiv
Year: 2016
Subjects: subject: Combinatorics (math.CO)
subject: Metric Geometry (math.MG)
subject: FOS: Mathematics
subject: 52B11, 13P25, 92B05

description: In a metric space, the Fermat-Weber points of a sample are statistics to measure the central tendency of the sample and it is well-known that the Fermat-Weber point of a sample is not necessarily unique in the metric space. We investigate the computation of Fermat-Weber points under the tropical metric on the quotient space $\mathbb{R}^{n} \!/ \mathbb{R} {\bf 1}$ with a fixed $n \in \mathbb{N}$, motivated by its application to the space of equidistant phylogenetic trees with $N$ leaves (in this case $n=\binom{N}{2}$) realized as the tropical linear space of all ultrametrics. We show that the set of all tropical Fermat-Weber points of a finite sample is always a classical convex polytope, and we present a combinatorial formula for a key value associated to this set. We identify conditions under which this set is a singleton. We apply numerical experiments to analyze the set of the tropical Fermat-Weber points within a space of phylogenetic trees. We discuss the issues in the computation of the tropical Fermat-Weber points.
description: 20 Pages, 2 figures. To appear in SIAM Journal on Discrete Mathematics
Quantum anomalous Hall effect in atomic crystal layers from in-plane magnetization
Creators: name: Ren, Yafei
name: Zeng, Junjie
name: Deng, Xinzhou
name: Yang, Fei
name: Pan, Hui
name: Qiao, Zhenhua
Publisher: name: arXiv
Year: 2015
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: We theoretically report that, with \textit{in-plane} magnetization, the quantum anomalous Hall effect (QAHE) can be realized in two-dimensional atomic crystal layers with preserved inversion symmetry but broken out-of-plane mirror reflection symmetry. We take the honeycomb lattice as an example, where we find that the low-buckled structure, which makes the system satisfy the symmetric criteria, is crucial to induce QAHE. The topologically nontrivial bulk gap carrying a Chern number of $\mathcal{C}=\pm1$ opens in the vicinity of the saddle points $M$, where the band dispersion exhibits strong anisotropy. We further show that the QAHE with electrically tunable Chern number can be achieved in Bernal-stacked multilayer systems, and the applied interlayer potential differences can dramatically decrease the critical magnetization to make the QAHE experimentally feasible.
description: 11 pages, 9 figures
Evaluation of the Electrical Properties of Intentionally Al and Fe Contaminated p-Type Cz Si Ingots: from Feedstock to Solar Cells
Creators: name: Degoulange, J.
name: Enjalbert, N.
name: Dubois, S.
name: Einhaus, R.
name: Cocco, F.
name: Grosset-Bourbange, D.
name: Rivat, P.
name: Delannoy, Y.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 600-604
description: This work presents results from different p-type Cz ingots that were grown from intentionally Iron and
Aluminium contaminated Poly Silicon Feedstock that was additionally doped with Phosphorus and Boron to simulate
typical compensated UMG Silicon. The objective was to investigate the impact of the metal contaminants on the material
quality and the solar cells performances, as well as to provide feedback to standards for the tolerable metal content in
Solar Grade Silicon feedstock. The chosen contamination level for Fe and Al in the feedstock (before crystal growth) was
equal to 2 ppm wt (i.e., 5.0×1016 cm-3 for Fe and 1.0×1017 cm-3 for Al), which offers a large range of concentrations on
wafers to be studied, due to segregation effects. p-type reference wafers from an uncompensated commercial ingot
without any metal contaminants were included in this investigation. The chemical composition and electrical properties
of the obtained wafers were evaluated. As a final evaluation step, standard Al-BSF solar cells were processed and
analyzed. The results show that an Al contamination (in the wafer) of 3 ×1014 at.cm-3 strongly affects the carrier lifetime
leading to a solar cell efficiency drop by more than 0.5% absolute compared to the commercial polysilicon Cz reference
wafers. Conversely a Fei concentration of 8.1010 cm-3 is compatible with high carrier lifetimes and high solar cells
efficiency, probably due to the gettering of Fe during the P-diffusion.
Rapid Processing of Boron Oxygen Defects
Creators: name: Hallam, B.
name: Hamer, P.
name: Nampalli, N.
name: Abbott, M.
name: Kim, M.
name: Chen, D.
name: Azmi, A.
name: Gorman, N.
name: Li, H.
name: Lu, P.H.D.
name: Wang, S.
name: Ciesla, A.
name: Chan, C.
name: Payne, D.
name: Mai, L.
name: Ji, J.
name: Wenham, S.R.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 531-535
description: This paper discusses mechanisms to allow a rapid mitigation of carrier-induced degradation in borondoped
Czochralski silicon, and in particular, the implications for mitigating such degradation in a production
environment. A mathematical model is used to determine the required time to effectively mitigate carrier-induced
degradation at different temperatures based on experimental data. Using an improved UNSW developed
hydrogenation process, less than 0.1% absolute loss in efficiency can be obtained within a 3 s process, compared to
approximately 40 s for more conventional approaches. This acceleration of carrier-induced degradation mitigation
suggests that such a process could be implemented into the cool-down section of existing belt furnaces.
Phosphorus Removal in Batch Silicon Refinement by Electron Beam
Creators: name: Kravtsov, Al.
name: Kravtsov, An.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 564-566
description: Vacuum refinement of silicon from phosphorus doping by our earlier developed electron beam heating
technique proved to be not efficient enough. A series of experiments were carried out in order to study dependencies
of refinement of silicon from phosphorus on process parameters. Comparison to refinement from arsenic is provided,
mechanism of phosphorus and arsenic removal is discussed. Evaporation in atomic form for arsenic and in both
atomic and molecular – P2 form for phosphorus are suggested. Kinetic constants for these processes are estimated.
Both objective and characteristic for batch process reasons are suggested to hamper phosphorus removal. Efficiency
of transport of silicon under refinement in earlier devised scheme of the process may lack efficiency. Also, process
architecture which includes container may prevent surface overheating contributing to removal efficiency.
The Study of the Method of Plasma-Chemical Purification of Metallurgical-Grade Silicon
Creators: name: Karabanov, S.M.
name: Yasevich, V.I.
name: Karabanov, A.S.
name: Dshkhunyan, V.L.
name: Hoshino, M.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 555-558
description: One of the major lines of solar energy development is the creation of environmentally friendly, wasteless
and cheap solar-grade silicon production technology. Currently the main silicon production technologies are based on
reduction of silicon hydrogen chloride compounds: trichlorosilane, tetrachlorosilane, monosilane. These technologies use
harmful and potentially dangerous compounds in quantity. These productions can be profitable only at big volumes (more
than 1000 tons per year). The present paper studies the method of plasma-chemical purification of metallurgical-grade
silicon from impurities to the solar-grade level. The regularities between the process parameters and the efficiency of
silicon purification from various impurities are determined. The plasma-chemical technology has a variety of advantages:
lack of wastes; harmful and dangerous substances are not used in the silicon production process; low energy intensity;
product low cost; wide range of production scaling.
Revisiting T2KK and T2KO physics potential and $ν_μ$ - $\barν_μ$ beam ratio
Creators: name: Hagiwara, Kaoru
name: Ko, Pyungwon
name: Okamura, Naotoshi
name: Takaesu, Yoshitaro
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: We revisit the sensitivity study of the Tokai-to-Kamioka-and-Korea (T2KK) and Tokai-to-Kamioka-and-Oki (T2KO) proposals where a water Cerenkov detector with the 100 kton fiducial volume is placed in Korea ($L = 1000$ km) and Oki island ($L = 653$ km) in Japan, respectively, in addition to the Super-Kamiokande for determination of the neutrino mass hierarchy and leptonic CP phase ($δ_{CP}$). We systematically study the running ratio of the $ν_μ$ and $\barν_μ$ focusing beams with dedicated background estimation for the $ν_e$ appearance and $ν_μ$ disappearance signals, especially improving treatment of the neutral current $π^0$ backgrounds. Using a $ν_μ$ - $\barν_μ$ beam ratio between 3 : 2 and 2.5 : 2.5 (in unit of $10^{21}$POT with the proton energy of 40 GeV), the mass hierarchy determination with the median sensitivity of 3 - 5 $σ$ by the T2KK and 1 - 4 $σ$ by the T2KO experiment are expected when $\sin^2θ_{23} = 0.5$, depending on the mass hierarchy pattern and CP phase. These sensitivities are enhanced (reduced) by $30\%$ - $40\%$ in $Δχ^2$ when $\sin^2θ_{23} = 0.6\, (0.4)$. The CP phase is measured with the uncertainty of $20^\circ$ - $50^\circ$ by the T2KK and T2KO using the $ν_μ$ - $\barν_μ$ focusing beam ratio between 3.5 : 1.5 and 1.5 : 3.5. These findings indicate that inclusion of the $\barν_μ$ focusing beam improves the sensitivities of the T2KK and T2KO experiments to both the mass hierarchy determination and leptonic CP phase measurement simultaneously with the preferred beam ratio being between 3 : 2 - 2.5 : 2.5 ($\times 10^{21}$POT).
description: 33 pages, 16 figures, 5 tables
Investigation of Process-Induced Parasitic Rear Contacts in High Efficiency PERC Pilot Manufacturing
Creators: name: Weber, T.
name: Müller, M.
name: Fülle, A.
name: Krause, A.
name: Wolny, F.
name: Fischer, G.
name: Schiepe, R.
name: Oehlke, A.
name: Kusterer, C.
name: Steckemetz, S.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 520-524
description: In this work we present a novel method to characterize the rear passivation layer of high efficiency
silicon solar cells. Electro- and Photo-luminescence imaging of solar cells with passivated rear side but without
intended local rear contacts reveals local parasitic current paths through the dielectric layer. A typical type of
parasitic contacts (ParCo) particularly emerges in areas where the rear surface is damaged on a microscopic scale or
contaminated before the passivation layer is deposited. We could trace back several selected failure images to the
causing process step by EL-image processing. Microscopy investigations before and after the rear screen-printing
step reveals small openings in the passivation layer which are the origin of the ParCos. Qualitative comparison of the
EL and PL signal implicate a low minority carrier lifetime in those areas. SEM investigations reveal an inverted
pyramidal shape of the ParCos mainly without back surface field formation. Analytical calculations suggest an
insignificant impact on the open circuit voltage for an affected area fraction of fParCo<<0.1%. However it cannot be
excluded that ParCos lead to more detrimental effects during future PERC development on cell and module level.
Development, Characterization and Modelling of Doping Profile, Contact Resistance, and Metal Spiking in Diffused and Screen-Printed Boron Emitters
Creators: name: Wöhrle, N.
name: Lohmüller, E.
name: Werner, S.
name: Greulich, J.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 495-501
description: Opposed to phosphorus n+-emitters on p-type silicon solar cells, p+-emitters on n-type silicon solar
cells show altered properties with respect to e.g. dopant diffusion, electrical contacting, and metal induced recombination.
This work tries to paint a consistent picture whose results base on deep-penetrating metal spikes (often also
referred to as crystallites) formed below Ag-Al screen printing pastes during the contact firing process. By optimizing
BBr3 diffusion processes, emitter dark saturation current densities of as low as 30 fA/cm² on alkaline textured and
passivated surface are obtained. For considering the interplay between boron doping profile and spike depth
regarding the specific contact resistance C, BBr3 diffusion processes are adapted yielding profiles with similar surface
concentration but different junction depth. Apart from the maximum boron concentration, the junction depth of the
doping profiles impacts C obtained for two examined Ag-Al pastes: deeper junctions lead to lower C. This finding is
confirmed by an analytical model taking metal spikes with penetration depths of several 100 nm into account. The
known issue of increased recombination below the Ag-Al metallization is addressed by a new simulation approach,
which models the actual geometric shape of metal spikes in a three-dimensional (3D) simulation utilizing the quasisteady-
state photoconductance (QSSPC) technique. With these 3D QSSPC simulations, we discuss the impact of
metal spiking in boron emitters in relation to depth and surface coverage of the spikes, and discuss the scenario which
leads to dark saturation current densities of metallized boron emitters in the range of several 1000 fA/cm².
UniSAFE: University of Ostrava - institutional policy to address gender-based violence
Creators: name: Andreska, Zuzana
name: Huck, Averil
name: Linkova, Marcela
Publisher: name: Zenodo
Year: 2022
Subjects: Gender based-violence
policy framework
gender+
institutional policy

description: UniSAFE has mapped the policies and measures to address and combat GBV in 48 universities and research organisations in 15 European countries. For each institution, the team created Vignettes which present national context, institutional policy, training, role in knowledge production, content of the policy, institutional procedure and implementation of the policy.
Thermal simulation of magnetization reversals for size-distributed assemblies of core-shell exchange biased nanoparticles
Creators: name: Richy, J.
name: Jay, J. Ph.
name: Pogossian, S. P.
name: Youssef, J. Ben
name: Sheppard, C. J.
name: Prinsloo, A. R. E.
name: Spenato, D.
name: Dekadjevi, D. T.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: A temperature dependent coherent magnetization reversal model is proposed for size-distributed assemblies of ferromagnetic nanoparticles and ferromagnetic-antiferromagnetic core-shell nanoparticles. The nanoparticles are assumed to be of uniaxial anisotropy and all aligned along their easy axis. The thermal dependence is included by considering thermal fluctuations, implemented via the Néel-Arrhenius theory. Thermal and angular dependence of magnetization reversal loops, coercive field and exchange-bias field are obtained, showing that F-AF size-distributed exchange-coupled nanoparticles exhibit temperature-dependent asymmetric magnetization reversal. Also, non-monotonic evolutions of He and Hc with T are demonstrated. The angular dependence of Hc with T exhibits a complex behavior, with the presence of an apex, whose position and amplitude are strongly T dependent. The angular dependence of He with T exhibits complex behaviors, which depends on the AF anisotropy and exchange coupling. The resulting angular behavior demonstrates the key role of the size distribution and temperature in the magnetic response of nanoparticles.
description: Revised arguments in Introduction and last section
Investigating the Impact of Parameter and Process Variations on Multicrystalline PERC Cell Efficiency
Creators: name: Wasmer, S.
name: Greulich, J.
name: Höffler, H.
name: Haunschild, J.
name: Demant, M.
name: Rein, S.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 477-484
description: In this work, we thoroughly investigate the impact of parameter and process variations in an
industrially feasible multicrystalline silicon (mc-Si) passivated emitter and rear cell (PERC) process. In an
experiment, where in total more than 800 mc-Si PERC cells are fabricated, we distribute 51 neighboring highperformance
mc-Si wafers and characterize them in depth to garner only the process-induced variations within a
larger experiment. We use numerical three-dimensional (3-D) device simulations to model the width of the resulting
distribution of solar cell efficiencies of this group. The main responsible parameters leading to a broadening of the
distribution are extracted and ranked by their impact, highlighting the parameters that need to be tuned and controlled
most accurately. In our case, from the variations in cell efficiencies amounting to 0.9 %abs., we identify the rear side
passivation and a wrap-around during the emitter etch back process to be in charge of almost 60 % of the total
fluctuations. With the presented approach and its findings, a better understanding of the underlying dependencies can
be developed and subsequently applied to improve the ramp-up and the development of mc PERC cell production. In
addition, the relevant parameters and their range obtained and denoted in this work are a fundamental input for
modelling a mc-Si PERC solar cell, drawing a realistic illustration of parameters achieved in today’s research
facilities and during ramp-up of PERC production.
Lacerações e Manejos do Trabalho de Parto
Creators: name: Maria Gabriela Vicente da Silva
name: Rosimere da Conceição Silva
name: Lilian Cruz Galindo
name: Thiago Gomes de Oliveira
name: Rosangela de Oliveira da Rocha
name: Yasmin Diniz de Freitas
name: Bárbara Renata Caetano Gomes
name: Thiago Ruam Nascimento
Publisher: name: Zenodo
Year: 2025

description: Objetivo: Analisar as complicações das lacerações perineais pós-parto e os desafios associados ao seu manejo. Métodos: A revisão integrativa foi realizada seguindo as diretrizes do PRISMA e incluiu estudos publicados entre 2019 e 2024, como observacionais, ensaios clínicos e revisões sistemáticas que exploraram as complicações das lacerações perineais decorrentes do parto vaginal. Resultados: Os estudos selecionados destacam que as lacerações perineais podem resultar em dor intensa, infecções locais e hemorragia pós-parto. A longo prazo, complicações como prolapso de órgãos pélvicos, depressão pós parto, dispareunia e incontinência urinária e fecal podem impactar significativamente a qualidade de vida das mulheres. Considerações finais: Para melhorar os desfechos maternos, é crucial implementar intervenções imediatas e preventivas no manejo das lacerações perineais. Assim, investir em capacitação profissional, incentivo à pesquisa científica sobre o tema e adotar abordagens personalizadas são medidas essenciais para promover uma experiência de parto mais positiva e segura.
Spectrally Shaped Supercontinuum for Advanced Solar Cell Characterization
Creators: name: Mundus, M.
name: Kumar Dasa, M.
name: Wang, X.
name: Hohl-Ebinger, J.
name: Warta, W.
Publisher: name: WIP
Year: 2015
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 514-519
description: Very recently it has been demonstrated that the special characteristics of supercontinuum lasers allow
for a virtually perfect imitation of standard solar spectra. As this eventually makes any spectral mismatch correction
redundant, supercontinuum sources are a promising tool for solar cell characterization. This paper contributes to their
further establishment in solar cell characterization in two ways: firstly, we will present a differential approach for fast
and precise short circuit current measurements by chopped and spectrally shaped supercontinuum radiation. Thereby
we overcome the current drawback of limited supercontinuum output power presently impeding their application in
large area solar simulators. Secondly, we will assess their potential by comparing spectral mismatch correction
factors of shaped supercontinuum radiation to those of state-of-the-art solar simulators for a variety of solar cells. By
a Random Walk Monte Carlo method we retrieve the uncertainties of these spectral mismatches and demonstrate that
imitating the moving average of a standard spectrum might yield lower measurement uncertainties as its perfect
replication. Moreover, the simulations will emphasize that, even in case of a perfect replication of standard spectra,
usage of spectrally well matched reference cell remains important for achieving lowest measurement uncertainties.
Finally, we will present first experimental short circuit current measurements of Silicon solar cells conducted with the
supercontinuum differential approach.
Dynamical Decoupling and Homogenization of continuous variable systems
Creators: name: Arenz, Christian
name: Hillier, Robin
name: Burgarth, Daniel
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: For finite-dimensional quantum systems, such as qubits, a well established strategy to protect such systems from decoherence is dynamical decoupling. However many promising quantum devices, such as oscillators, are infinite dimensional, for which the question if dynamical decoupling could be applied remained open. Here we first show that not every infinite-dimensional system can be protected from decoherence through dynamical decoupling. Then we develop dynamical decoupling for continuous variable systems which are described by quadratic Hamiltonians. We identify a condition and a set of operations that allow us to map a set of interacting harmonic oscillators onto a set of non-interacting oscillators rotating with an averaged frequency, a procedure we call homogenization. Furthermore we show that every quadratic system-environment interaction can be suppressed with two simple operations acting only on the system. Using a random dynamical decoupling or homogenization scheme, we develop bounds that characterize how fast we have to work in order to achieve the desired uncoupled dynamics. This allows us to identify how well homogenization can be achieved and decoherence can be suppressed in continuous variable systems.
description: 14 pages
Electron-phonon interactions from first principles
Creators: name: Giustino, Feliciano
Publisher: name: arXiv
Year: 2016
Subjects: subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: This article reviews the theory of electron-phonon interactions in solids from the point of view of ab-initio calculations. While the electron-phonon interaction has been studied for almost a century, predictive non-empirical calculations have become feasible only during the past two decades. Today it is possible to calculate from first principles many materials properties related to the electron-phonon interaction, including the critical temperature of conventional superconductors, the carrier mobility in semiconductors, the temperature dependence of optical spectra in direct and indirect-gap semiconductors, the relaxation rates of photoexcited carriers, the electron mass renormalization in angle-resolved photoelectron spectra, and the non-adiabatic corrections to phonon dispersion relations. Here we review the theoretical and computational framework underlying modern electron-phonon calculations from first principles, as well as landmark investigations of the electron-phonon interaction in real materials. In the first part of the article we summarize the elementary theory of electron-phonon interactions and their calculations based on density-functional theory. In the second part we discuss a general field-theoretic formulation of the electron-phonon problem, and establish the connection with practical first-principles calculations. In the third part we review a number of recent investigations of electron-phonon interactions in the areas of vibrational spectroscopy, photoelectron spectroscopy, optical spectroscopy, transport, and superconductivity.
description: 68 pages, 18 PNG figures. Expanded following suggestions from reviewers and colleagues. Added approx. 50 references. Updated arXiv references. Fixed typos (thanks everyone for your feedback). To appear in Reviews of Modern Physics