cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Comparison of Local Solar Cell Efficiency Analysis Performed by DLIT and CELLO
Creators: name: Breitenstein, O.
name: Carstensen, J.
name: Schütt, A.
name: Wagner, J.-M.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1538-1544
description: The local efficiency parameters of readily processed solar cells can be investigated both by applying
dark lock-in thermography (DLIT) and Solar Cell Local characterization (CELLO), which is a special bias-dependent
lock-in variant of light beam-induced current (LBIC) imaging. While the DLIT investigation directly leads to local
two-diode data, until now results of CELLO investigations were displayed in a different way. The main purpose of
this work is to develop a transformation of CELLO-based maps into local dark power and current density maps,
which allow a direct comparison of the two approaches for local efficiency analysis. The comparison on one and the
same cell shows a very good qualitative correspondence. Both DLIT and CELLO detect basically the same local
inhomogeneities in J01 and J02. However, there are still differences in the quantitative values. The origin of these
differences is discussed.
Thermodynamics of trajectories of open quantum systems, step by step
Creators: name: Pigeon, Simon
name: Xuereb, André
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Statistical Mechanics (cond-mat.stat-mech)
subject: FOS: Physical sciences

description: Thermodynamics of trajectories promises to make possible the thorough analysis of the dynamical properties of an open quantum system, a sought-after goal in modern physics. Unfortunately, calculation of the relevant quantities presents severe challenges. Determining the large-deviation function that gives access to the full counting statistics associated with a dynamical order parameter is challenging, if not impossible, even for systems evolving in a restricted Liouville space. Acting on the realisation that the salient features of most dynamical systems are encoded in the first few moments of the counting statistics, in this article we present a method that gives sequential access to these moments. Our method allows for obtaining analytical result in several cases, as we illustrate, and allows using large deviation theory to reinterpret certain well-known results.
description: 23 pages and 4 figures
Determining the Temperature of Bare Solar Cells and Local Hot Spots during  IV Measurements
Creators: name: Roth, T.
name: Wichmann, D.
name: Meyer, K.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1583-1585
description: For a reliable measurement of the electrical solar cell parameters, the exact cell temperature has to be
known. This holds especially for measurements under standard test conditions, but also for temperature-dependent
measurements for the extraction of temperature coefficients of the electrical cell parameters. Different strategies for
measuring the solar cell temperature as well as different temperature-sensor positions and settings will be analyzed in
detail.
In order to increase solar module reliability, solar cells with local hotspots have to be rejected during classification of
solar cells. For finding local hotspots during fast IV measurements, infrared camera setups are widely used,
necessitating a correlation between long-term and short-term infrared hot spot detection. In the second part of this
contribution, this correlation will be experimentally examined thoroughly.
Robust Head-Pose Estimation Based on Partially-Latent Mixture of Linear Regressions
Creators: name: Drouard, Vincent
name: Horaud, Radu
name: Deleforge, Antoine
name: Ba, Silèye
name: Evangelidis, Georgios
Publisher: name: arXiv
Year: 2016
Subjects: subject: Computer Vision and Pattern Recognition (cs.CV)
subject: FOS: Computer and information sciences

description: Head-pose estimation has many applications, such as social event analysis, human-robot and human-computer interaction, driving assistance, and so forth. Head-pose estimation is challenging because it must cope with changing illumination conditions, variabilities in face orientation and in appearance, partial occlusions of facial landmarks, as well as bounding-box-to-face alignment errors. We propose tu use a mixture of linear regressions with partially-latent output. This regression method learns to map high-dimensional feature vectors (extracted from bounding boxes of faces) onto the joint space of head-pose angles and bounding-box shifts, such that they are robustly predicted in the presence of unobservable phenomena. We describe in detail the mapping method that combines the merits of unsupervised manifold learning techniques and of mixtures of regressions. We validate our method with three publicly available datasets and we thoroughly benchmark four variants of the proposed algorithm with several state-of-the-art head-pose estimation methods.
description: 12 pages, 5 figures, 3 tables
Extended Chameleons
Creators: name: Brax, Philippe
name: Tamanini, Nicola
Publisher: name: arXiv
Year: 2015
Subjects: subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: General Relativity and Quantum Cosmology (gr-qc)
subject: FOS: Physical sciences

description: We extend the chameleon models by considering Scalar-Fluid theories where the coupling between matter and the scalar field can be represented by a quadratic effective potential with density-dependent minimum and mass. In this context, we study the effects of the scalar field on Solar System tests of gravity and show that models passing these stringent constraints can still induce large modifications of Newton's law on galactic scales. On these scales we analyse models which could lead to a percent deviation of Newton's law outside the virial radius. We then model the dark matter halo as a Navarro-Frenk-White profile and explicitly find that the fifth force can give large contributions around the galactic core in a particular model where the scalar field mass is constant and the minimum of its potential varies linearly with the matter density. At cosmological distances, we find that this model does not alter the growth of large scale structures and therefore would be best tested on galactic scales, where interesting signatures might arise in the galaxy rotation curves.
description: 21 pages, 8 figures; v2: acknowledgements added
The Legendrian knot complement problem
Creators: name: Kegel, Marc
Publisher: name: arXiv
Year: 2016
Subjects: subject: Geometric Topology (math.GT)
subject: Symplectic Geometry (math.SG)
subject: FOS: Mathematics
subject: 57M25 (Primary) 53D10, 57R65 (Secondary)

description: We prove that every Legendrian knot in the tight contact structure of the 3-sphere is determined by the contactomorphism type of its exterior. Moreover, by giving counterexamples we show this to be not true for Legendrian links in the tight 3-sphere. On the way a new user-friendly formula for computing the Thurston-Bennequin invariant of a Legendrian knot in a surgery diagram is given.
description: 32 pages, 14 figures; V2: Completly rewritten following the referee's advice. The results on non-equivalent Legendrian knots in lens spaces with contactomorphic exteriors contained a gap and are removed
Prediction of Wire Wear, Wire Bow and Wafer Total Thickness Variation in the Diamond Wire Wafering Process
Creators: name: Sunder, K.
name: Uhle, H.
name: Knöppel, S.
name: Anspach, O.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1491-1495
description: The optimal usage of costly but also high-performing diamond wire in the wafering process
necessitates a regular back-and-forth of the wire web with a small fresh wire supply per cycle (pilgrim mode)
instead of unidirectional movement as in the slurry-based process. This leads to a strong non-uniform wear of the
diamond wire across the wire web. In this work the wear of diamond wire is described in terms of decrease in
diamond density. It is shown that the wear of diamond wire correlates with the silicon length each segment of wire
was in contact with. Due to the complexity of the pilgrim mode and common sawing profiles these silicon contact
lengths are calculated by iteration. On the basis of several diamond wire cuts correlations between the silicon
contact lengths and the wire bow as well as the total thickness variation (TTV) of the wafers were found. These
results enable on the one hand the quantitative prediction of wire wear, wire bow and wafer TTV of further cuts
with the diamond wire used in this study. On the other hand they point to conditions in the sawing process which
improve or worsen wire bow and wafer TTV.
The correlation theory of the chemical bond
Creators: name: Szalay, Szilárd
name: Barcza, Gergely
name: Szilvási, Tibor
name: Veis, Libor
name: Legeza, Örs
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Strongly Correlated Electrons (cond-mat.str-el)
subject: Mathematical Physics (math-ph)
subject: Chemical Physics (physics.chem-ph)
subject: FOS: Physical sciences

description: The quantum mechanical description of the chemical bond is generally given in terms of delocalized bonding orbitals, or, alternatively, in terms of correlations of occupations of localised orbitals. However, in the latter case, multiorbital correlations were treated only in terms of two-orbital correlations, although the structure of multiorbital correlations is far richer; and, in the case of bonds established by more than two electrons, multiorbital correlations represent a more natural point of view. Here, for the first time, we introduce the true multiorbital correlation theory, consisting of a framework for handling the structure of multiorbital correlations, a toolbox of true multiorbital correlation measures, and the formulation of the multiorbital correlation clustering, together with an algorithm for obtaining that. These make it possible to characterise quantitatively, how well a bonding picture describes the chemical system. As proof of concept, we apply the theory for the investigation of the bond structures of several molecules. We show that the non-existence of well-defined multiorbital correlation clustering provides a reason for debated bonding picture.
description: Minor changes, recalculated results, conclusions unchanged. Molecular-physical applications in the main text, multipartite correlation theory in the appendix (10+13 pages, 3+7 figures), comments are welcome
Spin relaxation in phase space
Creators: name: Kalmykov, Yu. P.
name: Coffey, W. T.
name: Titov, S. V.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Statistical Mechanics (cond-mat.stat-mech)
subject: FOS: Physical sciences

description: We have treated numerous illustrative examples of spin relaxation problems using Wigner's phase-space formulation of quantum mechanics of particles and spins. The merit of the phase space formalism as applied to spin relaxation problems is that only master equations for the phase-space distributions akin to Fokker-Planck equations for the evolution of classical phase-space distributions in configuration space are involved so that operators are unnecessary. The explicit solution of these equations can be expanded for an arbitrary spin Hamiltonian in a finite series of spherical harmonics like in the classical case. The expansion coefficients (statistical moments or averages of the spherical harmonics which are obviously by virtue of the Wigner-Stratonovich map the averages of the polarization operators) may be determined from differential-recurrence relations in a manner similar to the classical case. Furthermore, the phase space representation via the Weyl symbols of the relevant spin operators suggests how powerful computation techniques developed for Fokker-Planck equations (matrix continued fractions, mean first passage time, etc.) may be transparently extended to the quantum domain.
Photons, Photon Jets and Dark Photons at 750 GeV and Beyond
Creators: name: Dasgupta, Basudeb
name: Kopp, Joachim
name: Schwaller, Pedro
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: High Energy Physics - Experiment (hep-ex)
subject: FOS: Physical sciences

description: In new physics searches involving photons at the LHC, one challenge is to distinguish scenarios with isolated photons from models leading to "photon jets". For instance, in the context of the 750 GeV diphoton excess, it was pointed out that a true diphoton resonance $S \to γγ$ can be mimicked by a process of the form $p p \to S \to a a \to 4γ$, where $S$ is a new scalar with a mass of 750 GeV and $a$ is a light pseudoscalar decaying to two collinear photons. Photon jets can be distinguished from isolated photons by exploiting the fact that a large fraction of photons convert to an $e^+e^-$ pair inside the inner detector. In this note, we quantify this discrimination power, and we study how the sensitivity of future searches differs for photon jets compared to isolated photons. We also investigate how our results depend on the lifetime of the particle(s) decaying to the photon jet. Finally, we discuss the extension to $S\to A^\prime A^\prime\to e^+e^-e^+e^-$, where there are no photons at all but the dark photon $A^\prime$ decays to $e^+e^-$ pairs. Our results will be useful in future studies of the putative 750 GeV signal, but also more generally in any new physics search involving hard photons.
description: 13 pages, 5 figures. V2: Improved detector simulation, journal version
Circular Orbits in the Taub-NUT and mass-less Taub-NUT Space-time
Creators: name: Pradhan, Parthapratim
Publisher: name: arXiv
Year: 2016
Subjects: subject: General Relativity and Quantum Cosmology (gr-qc)
subject: FOS: Physical sciences

description: In this work we study the equatorial causal geodesics of the Taub-NUT (TN) space-time in comparison with \emph{mass-less} TN space-time. We emphasized both on the null circular geodesics and time-like circular geodesics. From the effective potential diagram of null and time-like geodesics, we differentiate the geodesics structure between TN spacetime and mass-less TN space-time. It has been shown that there is a key role of the NUT parameter to changes the shape of pattern of the potential well in the NUT spacetime in comparison with \emph{mass-less} NUT space-time. We compared the ISCO (innermost stable circular orbit), MBCO (marginally bound circular orbit) and CPO (circular photon orbit) of the said space-time with graphically in comparison with mass-less cases. Moreover, we compute the radius of ISCO, MBCO and CPO for \emph{extreme} TN black hole (BH). Interestingly, we show that these \emph{three radii} coincides with the Killing horizon i.e. the null geodesic generators of the horizon. Finally in Appendix-A, we compute the center-of-mass (CM) energy for TN BH and mass-less TN BH. We show that in both cases the CM energy is finite. For \emph{extreme} NUT BH, we have found that the diverging nature of CM energy. \emph{First}, we have observed that a non-asymptotic flat, spherically symmetric and stationary extreme BH is showing such feature.
description: Version accepted in International Journal of Geometric Methods in Modern Physics
Entanglement-assisted capacities of compound quantum channels
Creators: name: Berta, Mario
name: Gharibyan, Hrant
name: Walter, Michael
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Information Theory (cs.IT)
subject: Mathematical Physics (math-ph)
subject: FOS: Physical sciences
subject: FOS: Computer and information sciences

description: We study universal quantum codes for entanglement-assisted quantum communication over compound quantum channels. In this setting, sender and receiver do not know the specific channel that will be used for communication, but only know the set that the channel is selected from. We investigate different variations of the problem: uninformed users, informed receiver, informed sender, and feedback assistance. We derive single-letter formulas for all corresponding channel capacities. Our proofs are based on one-shot decoupling bounds and properties of smooth entropies.
description: 16 pages
Electric polarizability in the three dimensional problem and the solution of an inhomogeneous differential equation
Creators: name: Maize, M. A.
name: Smetanka, J. J.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: In previous publications, we illustrated the effectiveness of the method of the inhomogeneous differential equation in calculating the electric polarizability in the one-dimensional problem. In this paper we extend our effort to apply the method to the three-dimensional problem.
description: 13 pages, 4 figures, submitted to the European Journal of Physics
Global existence and asymptotic behavior of affine motion of 3D ideal fluids surrounded by vacuum
Creators: name: Sideris, Thomas C.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Analysis of PDEs (math.AP)
subject: FOS: Mathematics
subject: 35Q31

description: The 3D compressible and incompressible Euler equations with a physical vacuum free boundary condition and affine initial conditions reduce to a globally solvable Hamiltonian system of ordinary differential equations for the deformation gradient in $\rm{GL}^+(3,\mathbb R)$. The evolution of the fluid domain is described by a family ellipsoids whose diameter grows at a rate proportional to time. Upon rescaling to a fixed diameter, the asymptotic limit of the fluid ellipsoid is determined by a positive semi-definite quadratic form of rank $r=1$, 2, or 3, corresponding to the asymptotic degeneration of the ellipsoid along $3-r$ of its principal axes. In the compressible case, the asymptotic limit has rank $r=3$, and asymptotic completeness holds, when the adiabatic index $γ$ satisfies $4/3
Active Stabilization of a Diode Laser Injection Lock
Creators: name: Saxberg, Brendan
name: Plotkin-Swing, Benjamin
name: Gupta, Subhadeep
Publisher: name: arXiv
Year: 2016
Subjects: subject: Atomic Physics (physics.atom-ph)
subject: Instrumentation and Detectors (physics.ins-det)
subject: Optics (physics.optics)
subject: FOS: Physical sciences

description: We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.
description: 5 pages, 7 figures
Implications of the absence of high-mass radion signals
Creators: name: Ahmed, Aqeel
name: Dillon, Barry M.
name: Grzadkowski, Bohdan
name: Gunion, John F.
name: Jiang, Yun
Publisher: name: arXiv
Year: 2015
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: High Energy Physics - Experiment (hep-ex)
subject: FOS: Physical sciences

description: Given the disappearance of the 750 GeV di-photon LHC signal and the absence of signals at high mass in this and other channels, significant constraints on the mixed Higgs-radion of the five-dimensional Randall-Sundrum model arise. By combining all channels, these constraints place a significant radion-mass-dependent lower bound on the radion vacuum expectation value that is fairly independent of the amount of Higgs radion mixing.
description: 23+1 pages, 11 figures and 1 table
Die Bruchstellen der gemeinsamen Perikopen-Reihenfolge als Indiz für vier gemeinsame Quellen der Synoptiker
Creators: name: Graf-Stuhlhofer, Franz
Publisher: name: European journal of theology
Year: 2024

description: European journal of theology, V. 9 N. 2 (2000): European Journal of Theology, Band 9, Heft 2
I-V Characterizations of High Efficiency c-Si Solar Cell with Solar I-V Tester and TCAD Simulation
Creators: name: Tsai, H.L.
name: Chen, S.-H.-L.
name: Wei, C.-M.
name: Hsieh, P.-T.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1518-1520
description: High efficiency silicon solar cell technologies have been entering the market in the last decade. These cells
are prone to transient effects during fast acquisition of the illuminated I-V characteristics carried out using
conventional cell testers. This fact results in a distortion of the measured I-V curve and significant errors in the
evaluation of fill-factor (FF) and efficiency. In this work, the capacitance magnitude between tranditional (p-type
solar cells) and high efficiency (n-type solar cells) structures are discussed. With the aid of the technology computer
aided design (TCAD) simulation tool, the best theoretical duration time of the cell tester as measuring n-type cells has
been found. Furthermore, the results of this simulation were compared with a suitable solar I-V tester applying a
completely new load-control approach to acquire the characteristics of high-efficiency n-type cells.
Brownian Emitters
Creators: name: Tsekov, R.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Statistical Mechanics (cond-mat.stat-mech)
subject: FOS: Physical sciences

description: A Brownian harmonic oscillator, which dissipates energy either by friction or via emission of electromagnetic radiation, is considered. This Brownian emitter is driven by the surrounding thermo-quantum fluctuations, which are theoretically described by the fluctuation-dissipation theorem. It is shown how the AbrahamLorentz force leads to dependence of the half-width on the peak frequency of the oscillator amplitude spectral density. It is also found that for the case of a charged particle, moving in vacuum at zero temperature, its root-mean-square velocity fluctuation is a universal constant, equal to roughly 1/18 of the speed of light. The relevant Klein-Kramers and Smoluchowski equations are derived as well.
description: The paper is dedicated to the 75th anniversary of Boryan Radoev
Impact of Low Temperature Annealing on the Lifetime in the Edge Regions of Multicrystalline Silicon Ingots
Creators: name: Zierer, R.
name: Möller, H.J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1460-1464
description: The improvement of the multicrystalline silicon quality is important to reduce the cost of
multicrystalline solar cells. The edge region of an ingot is normally contaminated with impurities, especially iron,
through diffusion from the crucible into the crystal during crystallization, and therefore not usable. Whereas the total
iron concentration of the order of 1015 cm-3 is quite high the dissolved interstitial iron concentration is one or two
orders of magnitude smaller [1]. It will be shown that through adequate annealing the dissolved iron concentration
can be further reduced. Edge samples with different contaminations of iron were annealed for 30, 60 and 90 minutes
at 650°C. The interstitial iron concentration in the edge region could be reduced down to values of 8*1011 cm-3. This
increases the lifetime, but the improvement is small, because of other remaining recombination center, which are less
affected by the annealing treatment.
Analysis of the Sub-Surface Damage of MC- and Cz-Si Wafers Sawn with Diamond-Plated Wire
Creators: name: Buchwald, R.
name: Würzner, S.
name: Fröhlich, K.
name: Winstanley, S.
name: Lehmann, T.
name: Sunder, K.
name: Möller, H.J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1502-1506
description: The goal of this work was to investigate the origin of increased breakage rate for diamond wire sawn
wafers. Therefore, crack depth analyses on beveled samples depending on the crystal orientation of the investigated
grains have been done by means of XRD measurements. The grains had surface orientations of {100}, {110} and
{111}. We found different crack depths which indicate a crystal orientation dependency of the crack depth. For
grains with {110} surface we measured the highest as well as the lowest crack depth. After consideration of x-, y- and
z- crystal orientation for these grains the angle between cleavage planes and wire direction was available.
Additionally, we have made single scratch tests on monocrystalline silicon with a (111) surface with varied load
perpendicular to the surface. We investigated the shape, depth and distance of cracks by cross section preparations
along single scratches. Lateral and vertical cracks were found with a periodicity of 40 – 60 μm for this sample. For
further investigations a novel scratch test technique, that offers the possibility to use test parameters comparable to
real sawing condition was developed and will be presented in this paper.
Radiative Inter Band GAP Recombination in Unpassivated AS-Cut Multicrystalline Silicon Wafers
Creators: name: Burud, I.
name: Flø, A.S.
name: Olsen, E.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1400-1402
description: In unprocessed silicon wafers, photoexcited electrons will effectively diffuse to- and recombine, at the surfaces,quenching out band to band photoluminescence. However, our measurements show that recombination throughinter bad gap transitions can be recorded on unpassivated as-cut multicrystalline silicon wafers. The four D1 –D4 spectral emission lines, generally attributed to dislocations, are clearly visualized as well as an emission at0.7 eV. A Principal Component Analysis (PCA) of the hyperspectral image stack extracts these five radiativeemissions in its first component enabling fast processing of the recorded data. This may enable fast, individualin line processing of mc-Si wafers for optimized cell processing.
Surface Passivation Study on Gettered Multicrystalline Silicon
Creators: name: Gindner, S.
name: Herzog, B.
name: Hahn, G.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1403-1407
description: In this study the electronic quality of multicrystalline silicon material in the as grown state and after
various POCl3 diffusion steps is analyzed. For this purpose two different surface passivations (quinhydrone-methanol
and a-Si:H) are tested and also their reproducibility is checked. It is found that the chemical passivation using
quinhydrone-methanol is more complicated to apply for detecting small differences on a relatively high lifetime level
which can be reached by the applied POCl3 diffusions on the Si materials under investigation.
Entanglement in a quantum neural network based on quantum dots
Creators: name: Altaisky, Mikhail V.
name: Zolnikova, Nadezhda N.
name: Kaputkina, Natalia E.
name: Krylov, Victor A.
name: Lozovik, Yurii E.
name: Dattani, Nikesh S.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: We studied the quantum correlations between the nodes in a quantum neural network built of an array of quantum dots with dipole-dipole interaction. By means of the quasiadiabatic path integral simulation of the density matrix evolution in a presence of the common phonon bath we have shown the coherence in such system can survive up to the liquid nitrogen temperature of 77K and above. The quantum correlations between quantum dots are studied by means of calculation of the entanglement of formation in a pair of quantum dots with the typical dot size of a few nanometers and the interdot distance of the same order. We have shown that the proposed quantum neural network can keep the mixture of entangled states of QD pairs up to the above mentioned high temperatures.
description: LaTeX, elsarticle, 6 pages, 2 eps figures
Trapping of Metallic Impurities in Multicrystalline Silicon Wafers
Creators: name: Kouadri Boudjelthia, A.
name: Regula, G.
name: Ntsoenzok, E.
name: Canino, M.
name: Benoit, R.
name: Torregrosa, F.
name: Allegrezza, M.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1414-1417
description: The gettering capacity of cavities towards metals is exploited in order to purify mc-Si wafers. The purification
sequence includes: i) cavity creation on the wafer surface by plasma immersion ion implantation (PIII) of hydrogen; ii) hightemperature
annealing to promote cavity growth and trapping of metal impurities by chemisorption at the cavity surface and
in the cavities; iii) etching of the metal-rich cavity layer (gettering zone). The formation of cavities and the trapping of metal
impurities are studied by secondary ion mass spectroscopy and transmission electron microscopy. The electrical qualities of
the resulting wafer substrates and the minority carrier lifetime are checked by microwave photoconductive decay after the
surface de-capping (stage iii). The procedure is finally validated by manufacturing heterojunction solar cells. The proposed
procedure proved to be effective for a substantial reduction of Cu and Ni impurities, for which the chemisorption is favored
thanks to their high binding energy with the cavities. The critical role of the annealing temperature and time on impurity detrapping,
as well as the importance of a low cooling rate emerged as key process parameters.
The industrial feasibility is ensured by the application of PIII, a plasma-based implantation technique that allows to
process large surfaces (30×30 cm2) very rapidly (2 minutes of processing).
Screen-Printed Phosphorus And Boron Diffusion Processes Using Beam Furnace
Creators: name: Uzum, A.
name: Yoshiba, S.
name: Dhamrin, M.
name: Suda, Y.
name: Kamisako, K.
name: Sato, H.
name: Katsuma, K.
name: Kato, K.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1380-1382
description: The use of screen-printing technology and beam furnaces for dopant diffusion process is so crucial for industrial solar
cell processes in order to reduce the cell production cost and to simplify the overall manufacturing process. In this work,
screen-printable phosphorus and boron dopant pastes “Aquanyl™”, suitable for beam furnace diffusion, are introduced.
For evaluation of the pastes, 50×50 mm2 p-type and n-type CZ-Si wafers were used for phosphorus and boron emitter
diffusions, respectively. Phosphorus diffusion was carried out for different time durations at temperatures between 850oC
and 925oC. Sheet resistances of 130 /sq and 40 /sq were achieved after diffusion for only 1 min at 850oC and 925oC,
respectively. Boron diffusion was carried at 925oC. Sheet resistances of 107 /sq and 65 /sq were achieved after
diffusion for 3 and 15 min at 925 oC, respectively. The effect of diffusion processes on the quality improvement of the
wafers was also investigated in terms of the carrier lifetime determination. All diffusion processes were carried out using
a beam furnace in air ambient.
Precipitation of Interstitial Iron in Multicrystalline Silicon
Creators: name: Liu, A.
name: Macdonald, D.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1389-1392
description: The internal gettering of iron in silicon via iron precipitation at low processing temperatures is known
to improve solar cell efficiencies. In this paper, we present experimental results on quantitatively analysing the
precipitation of interstitial Fe in multicrystalline silicon wafers during the 500oC-600oC thermal annealing processes.
The concentration and the spatial distribution of interstitial Fe in mc-Si were measured by the photoluminescence
imaging technique. It was found that, a high level of supersaturation is a necessary driving force for fast Fe
precipitation. Precipitation of Fe both near the grain boundaries and within the grains were observed.
Different Concepts of Implementing a Directly Plated Front Side Metallization into Industrial Solar Cell Mass Production
Creators: name: Horzel, J.
name: Bay, N.
name: Knarozovski, T.
name: Träger, A.
name: Passig, M.
name: Burschik, J.
name: Sieber, M.
name: Hoffmann, A.
name: Latzel, B.
name: Pysch, D.
name: Schmitt, C.
name: Sastrawan, R.
name: Kühnlein, H.
name: Vosteen, K.
name: Nussbaumer, H.
name: Böhme, R.
name: Schillinger, H.
name: Letize, A.
name: Lee, B.
name: Söderström, T.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1374-1379
description: In this paper, RENA presents progress in developing a metallization scheme for silicon solar cells based on laser
ablation and direct plating of Ni/Ag or Ni/Cu/Ag on silicon. A cluster consisting of a laser ablation tool, an inline
plating sequence for NiCuAg or NiAg followed by an annealing furnace can be upgraded in conventional
solar cell lines with screen printed front contacts replacing the front side print.
Solar cell batches processed with the RENA NiAg metallization scheme yielded average efficiencies of 19.4% in
an industrial environment on fully automated mass production tools capable of a throughput of 1200 wph. This
corresponded to an efficiency increase of about 0.5% compared to the screen printed baseline.
However, this metallization technology requires reliable module integration. Modules with conductive adhesives
used for interconnection had been already successfully demonstrated. This work concentrates on a number of
interconnection approaches for direct plated metal contacts including soldering interconnectors directly to plated
busbars or alternatively to printed busbars. Furthermore, first results from smart wire interconnection are shown.
Plating has been successfully applied to Al BSF solar cells, to PERC-type solar cells and to MWT solar cells and
is seen as an enabling technology for future solar cell generations.
Temperature Dependent Excess-Carrier Recombination Lifetime Study in Silicon Ingots and Bricks
Creators: name: Blum, A.L.
name: Swirhun, J.S.
name: Sinton, R.A.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1386-1388
description: Bulk excess-carrier recombination lifetime is a key parameter in silicon photovoltaic production.
Measurement of the recombination lifetime of a silicon brick or ingot prior to wafering is commonly done to assess
material quality. The lifetime measured at the brick and ingot level correlates to the final solar cell efficiency. At this
stage, the bulk lifetime can easily be measured on production samples without the requirement of sample preparation.
Since ingot and brick growth processes involve high temperature procedures, the temperature at the time of
qualification may be elevated. In order to quantify the effect of temperature on bulk lifetime measurements, this paper
presents the results of a temperature dependent excess-carrier lifetime study performed on silicon ingots and bricks.
Three distinct responses are observed for the three materials studied. Overall, lifetime increases by approximately
0.4-0.8%/°C for p-type Cz and multicrystalline silicon and 0.1%/°C for FZ silicon at a carrier density of 1×1015cm-3.
Industrial Screen Printed Solar Cells with Novel Atmospheric Pressure Dry Texturing Process
Creators: name: Kafle, B.
name: Trogus, D.
name: Dresler, B.
name: Köhler, D.
name: Mäder, G.
name: Clochard, L.
name: Duffy, E.
name: Hofmann, M.
name: Rentsch, J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1344-1350
description: Reduction of surface reflection remains a key area of investigation in order to improve the light confinement of solar
cells. Our one step atmospheric pressure dry etching process uses F2 gas to form nanotextures of different aspect
ratios on c-Si surfaces. The developed process is expected to be economically competitive with wet-chemical
texturing methods when scaled up for higher throughputs in an inline process. We have managed to reduce the
weighted surface reflection dramatically up to 2% and this can potentially be lowered further.. We have optimized the
surface texture that can be effectively passivated with ALD Al2O3 with reasonably low values of surface
recombination velocities. First Al-BSF solar cells prepared on multicrystalline wafers using the non-optimized
version of texture have reached a maximum conversion efficiency of 15.2% and primarily suffer with high
recombination losses in the surface and emitter region. Our next generation solar cells with an optimized texture are
expected to have significant improvement in the cell performance.
Investigation of N-Type Screen-Printed Bifacial Solar Cells with Diffused Boron Emitter and Implanted Phosphorous Bsf
Creators: name: Kang, C.-M.
name: Su, S.-P.
name: Chen, S.H.T.
name: Cheng, L.-W.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1371-1373
description: In this work, we present the approach of n-type screen-printed bifacial cells with boron emitter and
phosphorous BSF (Back Surface Field) which are fabricated by diffusion furnace and ion-implantation techniques,
respectively. The investigations show that the comparably low Joe (70 fA/cm2) on symmetrical samples (p+/n/p+) and the
implied-Voc of 660mV on the precursor structure (p+/n/n+) are achieved by the application of modified emitter formation.
On the fabrication of large-area 239cm2 n-type screen-printed bifacial solar cells, the certificated 19.29% cell efficiency
in average has been demonstrated. In comparison of precursor implied-Voc and cell Voc, the deterioration of Voc could be
caused by non-optimized metallization processes. Therefore, the optimization of metallization process and the
improvement of implanted back surface field will be further investigated.
p-Si/n-SiC Nanolayer Photovoltaic Cell
Creators: name: Zakhvalinskii, V.
name: Piliuk, E.
name: Goncharov, I.
name: Simashkevich, A.V.
name: Sherban, D.A.
name: Bruc, L.I.
name: Curmei, N.
name: Rusu, M.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1317-1320
description: Thin films of amorphous SiC were prepared by non-reactive magnetron sputtering in an Ar
atmosphere. A previously synthesized SiC was used as a solid-state target. Deposition was carried out on a cold
substrate of p-Si (100) with a resistivity of 2 Ohmcm. The Raman spectrum shows a dominant band at 982 cm-1, i.e.
in the spectral region characteristic for SiC. The film thickness determined from atomic force microscopy
measurements was about 8-40 nm, the height of the structural units of the film was 1-2 nm, while the linear
dimensions were of the order of tens of nanometers. The amorphous nature of SiC grown on the Si substrate is
confirmed by the presence of the diffraction rings which indicate the absence of the dominant orientation of the
prepared films. A heterostructure consisting of a p-type Si (100) and a layer of amorphous n-type SiC was fabricated
and studied. The investigation of its electrical and photoelectric properties shows that the entire space charge region
is located in Si. This is in addition confirmed by the spectral dependence of the p-Si/n-SiC photo sensitivity. The
barrier height at the p-Si/n-SiC interface estimated from dark I-V characteristics is of the order of 0.9-1.0 eV. Load IV
characteristics of p-Si/n-SiC-amorphous-nanolayer solar cells demonstrate under standard AM1.5 illumination
conditions a conversion efficiency of 7.22%.
Harnessing Smoothness to Accelerate Distributed Optimization
Creators: name: Qu, Guannan
name: Li, Na
Publisher: name: arXiv
Year: 2016
Subjects: subject: Optimization and Control (math.OC)
subject: FOS: Mathematics

description: There has been a growing effort in studying the distributed optimization problem over a network. The objective is to optimize a global function formed by a sum of local functions, using only local computation and communication. Literature has developed consensus-based distributed (sub)gradient descent (DGD) methods and has shown that they have the same convergence rate $O(\frac{\log t}{\sqrt{t}})$ as the centralized (sub)gradient methods (CGD) when the function is convex but possibly nonsmooth. However, when the function is convex and smooth, under the framework of DGD, it is unclear how to harness the smoothness to obtain a faster convergence rate comparable to CGD's convergence rate. In this paper, we propose a distributed algorithm that, despite using the same amount of communication per iteration as DGD, can effectively harnesses the function smoothness and converge to the optimum with a rate of $O(\frac{1}{t})$. If the objective function is further strongly convex, our algorithm has a linear convergence rate. Both rates match the convergence rate of CGD. The key step in our algorithm is a novel gradient estimation scheme that uses history information to achieve fast and accurate estimation of the average gradient. To motivate the necessity of history information, we also show that it is impossible for a class of distributed algorithms like DGD to achieve a linear convergence rate without using history information even if the objective function is strongly convex and smooth.
description: 30 pages, 4 figures
Study of statistical properties of hybrid statistic in coherent multi-detector compact binary coalescences Search
Creators: name: Haris, K
name: Pai, Archana
Publisher: name: arXiv
Year: 2015
Subjects: subject: General Relativity and Quantum Cosmology (gr-qc)
subject: High Energy Astrophysical Phenomena (astro-ph.HE)
subject: FOS: Physical sciences

description: In this article, we revisit the problem of coherent multi-detector search of gravitational wave from compact binary coalescence with Neutron stars and Black Holes using advanced interferometers like LIGO-Virgo. Based on the loss of optimal multi-detector signal-to-noise ratio (SNR), we construct a hybrid statistic as a best of maximum-likelihood-ratio(MLR) statistic tuned for face-on and face-off binaries. The statistical properties of the hybrid statistic is studied. The performance of this hybrid statistic is compared with that of the coherent MLR statistic for generic inclination angles. Owing to the single synthetic data stream, the hybrid statistic gives low false alarms compared to the multi-detector MLR statistic and small fractional loss in the optimum SNR for a large range of binary inclinations. We have demonstrated that for a LIGO-Virgo network and binary inclination, ε< 70 deg. and ε> 110 deg., the hybrid statistic captures more than 98% of network optimum matched filter SNR with low false alarm rate. The Monte-Carlo exercise with two distributions of incoming inclination angles namely, U[cos(ε)] and more realistic distribution proposed by B. F. Schutz are performed with hybrid statistic and gave ~5% and ~7% higher detection probability respectively compared to the two stream multi-detector MLR statistic for a fixed false alarm probability of 10^-5.
description: Published in Phys. Rev. D
Inline Ion Doping System for High Efficiency Low Cost Si Solar Cell
Creators: name: Murakami, Y.
name: Soga, T.
name: Nakamura, K.
name: Ohshita, Y.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1225-1227
description: We investigated a new inline ion doping system, so-called ion shower, for crystalline Si solar cell and
confirmed that this system has huge potential to improve cell efficiency and reduce production cost. After boron (B)
ion was doped into Cz Si wafer with various process parameters using this system, the annealing step was done. We
were able to make B doped layer and take effective control of sheet resistance (s) and doping profile. Additionally,
useful knowledge and suggestions about the mechanism of ion doping were gotten from the series of evaluations. In
conclusion, we were able to make intended B doped layer using the ion shower doping system by control of doping
and annealing parameters. Several features of this system are big advantages to realize high efficiency low cost cell
fabrication process.
Extended Study on Short Pulse Laser Ablation of Dielectric Layers with UV and VIS Laser Wavelength and Pulse Durations from fs to ns
Creators: name: Theobald, J.
name: Mayerhofer, R.
name: Großer, S.
name: Harney, R.
name: Schneider, A.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1231-1235
description: A wide range laser pulse duration experiment is carried out including pulse durations from 250
femtoseconds (fs) to 30 nanoseconds (ns) based on four different laser systems, two capable of visible (VIS) and
ultra-violet (UV) wavelength. All laser systems are used to ablate PECVD SiO2/SiNX and PECVD-based nitride
passivation stacks. Test structure samples for photoluminescence (PL) and scanning electron microscopy (SEM)
analysis are ablated as well as typical line patterns for PERC solar cells and fluence test samples for all laser systems.
In addition standard multi-crystalline (mc) solar cells are ablated on the front side as proposed in [1] to study laser
damage effects due to the reduction of the pseudo fill factor (pFF). Thus a comparison of four different evaluation
methods (SEM, pFF, PL, IV) for laser damage is carried out showing a good correlation between PL measurements
and VOC and pseudo fill factor values from the IV characteristics on solar cell level. The pFF based method, although
it is very reliable, does not provide full information for PERC rear side openings which is attributed to the
dependence of the aluminum alloy formation on the surface structure remaining after laser ablation.