title: Ð£ÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð¡ÐÐ§ Ð¿Ð¾ ÑÑ ÐµÐ¼Ðµ ÐÐ¾Ð³ÐµÑÑÐ¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: RF Doherty power amplifier
Creators: name: Ð¡ÐµÐ»ÑÐ´ÑÐºÐ¾Ð²Ð°, ÐÐ¸ÐºÑÐ¾ÑÐ¸Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: ÐÐ¾Ð³ÐµÑÑÐ¸
MOSFET ÑÑÐ°Ð½Ð·Ð¸ÑÑÐ¾Ñ
Ð½ÐµÑÐ°Ð²Ð½Ð¾Ð¼ÐµÑÐ½ÑÐ¹ Ð´ÐµÐ»Ð¸ÑÐµÐ»Ñ Ð£Ð¸Ð»ÐºÐ¸Ð½ÑÐ¾Ð½Ð°
Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð½ÑÐ¹ Ð¾ÑÐ²ÐµÑÐ²Ð¸ÑÐµÐ»Ñ
Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ°
WL-CT350
FR4
ÑÐ¾Ð¿Ð¾Ð»Ð¾Ð³Ð¸Ñ
ÑÐ»ÐµÐºÑÑÐ¾Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÐ¹ Ð°Ð½Ð°Ð»Ð¸Ð·
ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ°Ñ Ð¿ÑÐ¾Ð½Ð¸ÑÐ°ÐµÐ¼Ð¾ÑÑÑ
ÐºÐ¾Ð»ÑÑÐµÐ²Ð¾Ð¹ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾Ñ
Ð¿ÐµÑÐ°ÑÐ½Ð°Ñ Ð¿Ð»Ð°ÑÐ°
Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ðµ
Doherty
MOSFET transistor
unequal Willkinson power divider
branch line coupler
substrate
topology
electromagnetic analysis
etching
dielectric constant
ring resonator
printed circuit board
measurement

description: Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð¡ÐÐ§ Ð¿Ð¾ ÑÑÐµÐ¼Ðµ ÐÐ¾Ð³ÐµÑÑÐ¸. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° ÑÑÐµÐ¼Ð° ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð¡ÐÐ§ Ð¿Ð¾ ÑÑÐµÐ¼Ðµ ÐÐ¾Ð³ÐµÑÑÐ¸ Ð½Ð° ÑÐ°ÑÑÐ¾ÑÐµ 900 ÐÐÑ Ñ ÑÑÐµÐ±ÑÐµÐ¼Ð¾Ð¹ Ð²ÑÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÑÑ 43 Ð´ÐÐ¼, ÑÑÐ¾ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÐµÑ 20 ÐÑ, Ð¸ ÐÐÐ Ð½Ðµ Ð¼ÐµÐ½ÐµÐµ 30% Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ Ð¾Ñ Ð¼Ð°ÐºÑÐ¸Ð¼Ð°Ð»ÑÐ½Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð´Ð¾ Ð²ÑÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸, ÑÐ½Ð¸Ð¶ÐµÐ½Ð½Ð¾Ð¹ Ð½Ð° 6 Ð´ÐÐ¼. Ð ÐºÐ°ÑÐµÑÑÐ²Ðµ Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ° Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÐµÑÑÑ MOSFET ÑÑÐ°Ð½Ð·Ð¸ÑÑÐ¾Ñ MW6S010n. ÐÐ»Ñ ÑÐµÐ°Ð»Ð¸Ð·Ð°ÑÐ¸Ð¸ Ð¿ÐµÑÐ°ÑÐ½Ð¾Ð¹ Ð¿Ð»Ð°ÑÑ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð²ÑÐ±ÑÐ°Ð½ Ð´ÐµÑÐµÐ²ÑÐ¹ Ð¸ Ð½Ð°Ð¸Ð±Ð¾Ð»ÐµÐµ Ð´Ð¾ÑÑÑÐ¿Ð½ÑÐ¹ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð» FR4. ÐÐ»Ñ Ð¼Ð¸Ð½Ð¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ð¸ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐ°Ð·Ð±ÑÐ¾ÑÐ° Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð¿ÑÐ¾Ð½Ð¸ÑÐ°ÐµÐ¼Ð¾ÑÑÐ¸ Ð½Ð° Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÑ ÑÑÐµÐ¼Ñ Ð´Ð°Ð½Ð½Ð°Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ° Ð±ÑÐ»Ð° Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð° Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÐºÐ¾Ð»ÑÑÐµÐ²Ð¾Ð³Ð¾ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ°. ÐÐ¸ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ°Ñ Ð¿ÑÐ¾Ð½Ð¸ÑÐ°ÐµÐ¼Ð¾ÑÑÑ ÑÐ¾ÑÑÐ°Ð²Ð¸Ð»Ð° 4,05. Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° ÑÐ¾Ð¿Ð¾Ð»Ð¾Ð³Ð¸Ñ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ ÐÐ¾Ð³ÐµÑÑÐ¸ Ñ ÑÑÐµÑÐ¾Ð¼ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸ FR4. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ñ ÑÐ»ÐµÐºÑÑÐ¾Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÐ¼ Ð°Ð½Ð°Ð»Ð¸Ð·Ð¾Ð¼ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð° Ð²ÑÑÐ¾Ð´Ð½Ð°Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÑ 45 Ð´ÐÐ¼, ÑÑÐ¾ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÐµÑ 31,6 ÐÑ Ð¿ÑÐ¸ Ð²ÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ 2,3 ÐÑ, ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ ÑÑÐ¸Ð»ÐµÐ½Ð¸Ñ 11,3 Ð´Ð, ÐÐÐ Ð¾Ñ 34% Ð´Ð¾ 53% Ð¾Ñ ÑÑÐ¾Ð²Ð½Ñ Ð¼Ð¸Ð½ÑÑ 6 Ð´Ð Ð¸ Ð´Ð¾ Ð¼Ð°ÐºÑÐ¸Ð¼Ð°Ð»ÑÐ½Ð¾Ð¹ Ð²ÑÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸. ÐÐ·Ð³Ð¾ÑÐ¾Ð²Ð»ÐµÐ½Ð° Ð¿ÐµÑÐ°ÑÐ½Ð°Ñ Ð¿Ð»Ð°ÑÐ° ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ FR4. ÐÐ° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¸Ð·Ð³Ð¾ÑÐ¾Ð²Ð»ÐµÐ½Ð½Ð¾Ð¹ Ð¿ÐµÑÐ°ÑÐ½Ð¾Ð¹ Ð¿Ð»Ð°ÑÑ ÑÐ¾Ð±ÑÐ°Ð½ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ ÐÐ¾Ð³ÐµÑÑÐ¸. Ð­ÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÐµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¸, ÑÑÐ¾ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð²ÑÐ´Ð°ÐµÑ Ð¼Ð°ÐºÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÑ Ð¼Ð¾ÑÐ½Ð¾ÑÑÑ Ð½Ð° Ð½Ð°Ð³ÑÑÐ·ÐºÐµ 50 ÐÐ¼ 44 Ð´ÐÐ¼ Ð¿ÑÐ¸ ÑÐ¾ÐºÐµ Ð¿Ð¾ÑÑÐµÐ±Ð»ÐµÐ½Ð¸Ñ 0,3 Ð Ð¾Ñ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ° Ð¿Ð¸ÑÐ°Ð½Ð¸Ñ 28 Ð, ÑÐ°ÐºÐ¸Ð¼ Ð¾Ð±ÑÐ°Ð·Ð¾Ð¼, ÑÑÐ¸Ð»ÐµÐ½Ð¸Ðµ 11,5 Ð´Ð, ÐÐÐ Ð¾Ñ 37,8% Ð´Ð¾ 50%, ÑÑÐ¾ Ð¿Ð¾Ð´ÑÐ²ÐµÑÐ¶Ð´Ð°ÐµÑ ÑÐ°Ð±Ð¾ÑÐ¾ÑÐ¿Ð¾ÑÐ¾Ð±Ð½Ð¾ÑÑÑ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð½Ð¾Ð¹ ÑÑÐµÐ¼Ñ.
description: The aim is the development of RF Doherty power amplifier. As a result of the research, a RF power amplifier circuit has been developed using the Doherty technique at a frequency of 900 MHz. The required output power is 43 dBm, equivalent to 20 watts. The efficiency of the circuit is at least 30%, from the maximum power to the output power reduced by 6 dBm. The active element used in the circuit is the MW6S010n MOSFET transistor. The cheapest and most affordable substrate material, FR4, was chosen to create the printed circuit board for the developed Doherty power amplifier. To minimize the effect of dielectric constant spread on circuit parameters, this characteristic was measured using the ring resonator method. The dielectric constant of FR4 was 4,05. The topology of the Doherty amplifier was developed taking into account the characteristics of FR4. As a result of electromagnetic analysis, an output power of 45 dBm was obtained, which is equivalent to 31,6 W with an input power of 2,3 W, a gain of 11,3 dB, an efficiency ranging from 34% to 53% with a minimum of -6 dB to the maximum of the output power. The printed circuit board was made on the FR4 substrate, and a Doherty amplifier was assembled on it. Experimental studies have shown that the amplifier achieves at a load of 50 ohms the maximum output power of 44 dBm, with a current consumption of 03 A, from a 28 V power supply. Thus, the gain is 11,5 dB and the efficiency ranges from 37,8% to 50%, which confirms the operability of the developed circuit.