title: Ð¡Ð²ÐµÑÑ ÑÑÑÑÐºÑÑÑÐ° S-ÑÐ¸Ð¿Ð° Ð² ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÑÐ½ÐºÐ°Ñ ÑÐ¸ÑÐºÐ¾Ð½Ð°ÑÐ° ÑÐ²Ð¸Ð½ÑÐ°
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: S-type superstructure in lead zirconate thin films
Creators: name: ÐÑÐ¸Ð±ÑÑÐºÐ¾Ð²Ð°, ÐÐ½Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ñ
ÑÐ¸ÑÐºÐ¾Ð½Ð°Ñ ÑÐ²Ð¸Ð½ÑÐ°
ÑÐ°Ð·Ð¾Ð²ÑÐµ Ð¿ÐµÑÐµÑ Ð¾Ð´Ñ
ÑÐ¾Ð½ÐºÐ¸Ðµ Ð¿Ð»ÑÐ½ÐºÐ¸
Ð°Ð½ÑÐ¸ÑÐµÐ³Ð½ÐµÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÐºÐ¸
diffraction
lead zirconate
phase transitions
thin films
antiferroelectrics

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÑÑÑÐºÑÑÑÐ½ÑÑ ÑÐ°Ð·Ð¾Ð²ÑÑ Ð¿ÐµÑÐµÑÐ¾Ð´Ð¾Ð² ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÑÐ½Ð¾Ðº ÑÐ¸ÑÐºÐ¾Ð½Ð°ÑÐ° ÑÐ²Ð¸Ð½ÑÐ° (PbZrO3) ÑÐ¾Ð»ÑÐ¸Ð½Ð¾Ð¹ 25, 50 Ð¸ 200 Ð½Ð¼ Ð¸ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð¿Ð»ÑÐ½ÐºÐ¸ Ð½Ð° ÐµÑ Ð°Ð½ÑÐ¸ÑÐµÐ³Ð½ÐµÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð°. Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ° Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¸ Ð½Ð°Ð»Ð¸ÑÐ¸Ðµ ÐµÐ´Ð¸Ð½ÑÑÐ²ÐµÐ½Ð½Ð¾Ð³Ð¾ ÑÐ°Ð·Ð¾Ð²Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÑÐ¾Ð´Ð° I ÑÐ¾Ð´Ð°, Ð±Ð»Ð¸Ð·ÐºÐ¾Ð³Ð¾ ÐºÐ¾ II ÑÐ¾Ð´Ñ Ð¸Ð· Ð°Ð½ÑÐ¸ÑÐµÐ³Ð½ÐµÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð² Ð¿Ð°ÑÐ°ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ðµ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ðµ Ð´Ð»Ñ Ð²ÑÐµÑ ÑÑÑÑ Ð¿Ð»ÑÐ½Ð¾Ðº. Ð ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÑÐ½ÐºÐ°Ñ ÑÐ¾Ð»ÑÐ¸Ð½Ð¾Ð¹ 25 Ð½Ð¼ Ð¸ 50 Ð½Ð¼ Ð²ÐµÐ»Ð¸ÑÐ¸Ð½Ñ Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ ÑÐµÑÐ»ÐµÐºÑÐ¾Ð² Î£- Ð¸ R-ÑÐ¸Ð¿Ð° Ð¿ÑÐ¾Ð¿Ð¾ÑÑÐ¸Ð¾Ð½Ð°Ð»ÑÐ½Ñ ÑÐ¾Ð»ÑÐ¸Ð½Ðµ Ð¿Ð»ÑÐ½ÐºÐ¸, Ð² ÑÐ¾ Ð²ÑÐµÐ¼Ñ ÐºÐ°Ðº Ð´Ð»Ñ Ð¿Ð»ÑÐ½ÐºÐ¸ 200 Ð½Ð¼ Ð¾Ð¶Ð¸Ð´Ð°ÐµÐ¼Ð°Ñ Ð¿ÑÐ¾Ð¿Ð¾ÑÑÐ¸Ð¾Ð½Ð°Ð»ÑÐ½Ð¾ÑÑÑ Ð½Ðµ Ð½Ð°Ð±Ð»ÑÐ´Ð°ÐµÑÑÑ. Ð¢Ð°ÐºÐ¸Ð¼ Ð¾Ð±ÑÐ°Ð·Ð¾Ð¼, Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÑ ÑÐ²ÐµÑÑÑÑÑÑÐºÑÑÑÐ½ÑÑ Ð¸ÑÐºÐ°Ð¶ÐµÐ½Ð¸Ð¹ Ð² ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÑÐ½ÐºÐ°Ñ ÑÐ¸ÑÐºÐ¾Ð½Ð°ÑÐ° ÑÐ²Ð¸Ð½ÑÐ° ÑÐ°ÑÑÑÑ Ð¿ÑÐ¾Ð¿Ð¾ÑÑÐ¸Ð¾Ð½Ð°Ð»ÑÐ½Ð¾ ÑÐ¾Ð»ÑÐ¸Ð½Ðµ Ð´Ð¾ ÐºÑÐ¸ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð·Ð½Ð°ÑÐµÐ½Ð¸Ñ ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð¼ÐµÐ¶Ð´Ñ 50 Ð½Ð¼ Ð¸ 200 Ð½Ð¼. ÐÐ¾Ð¼Ð¸Ð¼Ð¾ ÐºÐ¾Ð»Ð¸ÑÐµÑÑÐ²ÐµÐ½Ð½Ð¾Ð³Ð¾ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ ÑÐµÑÐ»ÐµÐºÑÐ¾Ð² Î£- Ð¸ R-ÑÐ¸Ð¿Ð°, ÐºÐ°ÑÑÐ¸Ð½Ð° ÑÐ°ÑÑÐµÑÐ½Ð¸Ñ Ð² ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÑÐ½ÐºÐ°Ñ ÑÐ¸ÑÐºÐ¾Ð½Ð°ÑÐ° ÑÐ²Ð¸Ð½ÑÐ° ÐºÐ°ÑÐµÑÑÐ²ÐµÐ½Ð½Ð¾ Ð¼ÐµÐ½ÑÐµÑÑÑ Ñ ÑÐ¾Ð»ÑÐ¸Ð½Ð¾Ð¹: Ðº Ð½Ð°Ð±Ð»ÑÐ´Ð°ÐµÐ¼ÑÐ¼ Ð² Ð¿Ð»ÑÐ½ÐºÐµ 25 Ð½Ð¼ ÑÐµÑÐ»ÐµÐºÑÐ°Ð¼ Î£- Ð¸ R-ÑÐ¸Ð¿Ð° Ð¿ÑÐ¸ ÑÐ¾Ð»ÑÐ¸Ð½Ðµ 50 Ð½Ð¼ Ð´Ð¾Ð±Ð°Ð²Ð»ÑÑÑÑÑ ÑÐµÑÐ»ÐµÐºÑÑ out-of-plane Ð-ÑÐ¸Ð¿Ð°, Ð° Ð¿ÑÐ¸ ÑÐ¾Ð»ÑÐ¸Ð½Ðµ 200 Ð½Ð¼ âS-ÑÐ¸Ð¿Ð°, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐ°Ð½ÐµÐµ Ð² ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÑÐ½ÐºÐ°Ñ ÑÐ¸ÑÐºÐ¾Ð½Ð°ÑÐ° ÑÐ²Ð¸Ð½ÑÐ° Ð½Ðµ Ð½Ð°Ð±Ð»ÑÐ´Ð°Ð»Ð¸ÑÑ. Ð ÐµÑÐ»ÐµÐºÑÑ Ð½ÐµÑÐ¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÑ ÑÑÑÑÐºÑÑÑ Ð¸ ÑÐµÑÐ»ÐµÐºÑÑ in-plane M-ÑÐ¸Ð¿Ð° Ð½Ðµ Ð½Ð°Ð±Ð»ÑÐ´Ð°Ð»Ð¸ÑÑ Ð½Ð¸ Ð² Ð¾Ð´Ð½Ð¾Ð¹ Ð¸Ð· Ð¿Ð»ÑÐ½Ð¾Ðº. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð² Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ðµ Ð¼Ð¾Ð³ÑÑ Ð±ÑÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ñ Ð¿ÑÐ¸ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐµ Ð½Ð¾Ð²ÑÑ ÑÐ½ÐµÑÐ³Ð¾Ð·Ð°Ð¿Ð°ÑÐ°ÑÑÐ¸Ñ Ð¸ Ð·Ð°Ð¿Ð¾Ð¼Ð¸Ð½Ð°ÑÑÐ¸Ñ ÑÑÑÑÐ¾Ð¹ÑÑÐ².
description: The aim of this work is to study the structural phase transitions of thin films of lead zirconate (PbZrO3) with a thickness of 25, 50, and 200 nm and to study the effect of the film thickness on its antiferroelectric properties. As part of the study, a number of temperature experiments on wet-crystal X-ray diffraction were implemented, and a qualitative analysis of reciprocal space slices obtained using the CrysAlis application program was carried out. According to the results of the work, the presence of a single phase transition of the first order, close to the second, from the antiferroelectric to the paraelectric state was established for all three films. Separation of the thickest film from thinner ones was revealed: change in the nature of the temperature dependence of the intensity of the reflex; enrichment of the diffraction pattern with thickening of the film. Observation of the temperature dependences of the intensity of the Î£- and R-type reflections, characteristic of the antiferroelectric state of lead zirconate, showed a discrepancy between the expected proportionality of the intensity to the film thickness: proportionality is retained only for thinner films. According to a qualitative analysis of reciprocal space slices, it can be said that the diffraction pattern of the 200 nm film is distinguished not only by the high intensity of reflections, but also by the number of reflection types. To the reflections observed in the 25 nm film, first, at a thickness of 50 nm, M-type reflections are added, and at a thickness of 200 nm, out-of-plane M- and S-type reflections are added, the latter were not previously observed in epitaxial PbZrO3 samples. The results obtained are promising for future practical applications.