InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Creators: name: Aghaee, Morteza
name: Akkala, Arun
name: Alam, Zulfi
name: Ali, Rizwan
name: Ramirez, Alejandro Alcaraz
name: Andrzejczuk, Mariusz
name: Antipov, Andrey E
name: Aseev, Pavel
name: Astafev, Mikhail
name: Bauer, Bela
name: Becker, Jonathan
name: Boddapati, Srini
name: Boekhout, Frenk
name: Bommer, Jouri
name: Hansen, Esben Bork
name: Bosma, Tom
name: Bourdet, Leo
name: Boutin, Samuel
name: Caroff, Philippe
name: Casparis, Lucas
name: Cassidy, Maja
name: Christensen, Anna Wulf
name: Clay, Noah
name: Cole, William S
name: Corsetti, Fabiano
name: Cui, Ajuan
name: Dalampiras, Paschalis
name: Dokania, Anand
name: de Lange, Gijs
name: de Moor, Michiel
name: Saldaña, Juan Carlos Estrada
name: Fallahi, Saeed
name: Fathabad, Zahra Heidarnia
name: Gamble, John
name: Gardner, Geoff
name: Govender, Deshan
name: Griggio, Flavio
name: Grigoryan, Ruben
name: Gronin, Sergei
name: Gukelberger, Jan
name: Heedt, Sebastian
name: Zamorano, Jesús Herranz
name: Ho, Samantha
name: Holgaard, Ulrik Laurens
name: Nielsen, William Hvidtfelt Padkær
name: Ingerslev, Henrik
name: Krogstrup, Peter Jeppesen
name: Johansson, Linda
name: Jones, Jeffrey
name: Kallaher, Ray
name: Karimi, Farhad
name: Karzig, Torsten
name: King, Evelyn
name: Kloster, Maren Elisabeth
name: Knapp, Christina
name: Kocon, Dariusz
name: Koski, Jonne
name: Kostamo, Pasi
name: Kumar, Mahesh
name: Laeven, Tom
name: Larsen, Thorvald
name: Li, Kongyi
name: Lindemann, Tyler
name: Love, Julie
name: Lutchyn, Roman
name: Manfra, Michael
name: Memisevic, Elvedin
name: Nayak, Chetan
name: Nijholt, Bas
name: Madsen, Morten Hannibal
name: Markussen, Signe
name: Martinez, Esteban
name: McNeil, Robert
name: Mullally, Andrew
name: Nielsen, Jens
name: Nurmohamed, Anne
name: O'Farrell, Eoin
name: Otani, Keita
name: Pauka, Sebastian
name: Petersson, Karl
name: Petit, Luca
name: Pikulin, Dima
name: Preiss, Frank
name: Perez, Marina Quintero
name: Rasmussen, Katrine
name: Rajpalke, Mohana
name: Razmadze, Davydas
name: Reentila, Outi
name: Reilly, David
name: Rouse, Richard
name: Sadovskyy, Ivan
name: Sainiemi, Lauri
name: Schreppler, Sydney
name: Sidorkin, Vadim
name: Singh, Amrita
name: Singh, Shilpi
name: Sinha, Sarat
name: Sohr, Patrick
name: Stankevič, Tomaš
name: Stek, Lieuwe
name: Suominen, Henri
name: Suter, Judith
name: Svidenko, Vicky
name: Teicher, Sam
name: Temuerhan, Mine
name: Thiyagarajah, Nivetha
name: Tholapi, Raj
name: Thomas, Mason
name: Toomey, Emily
name: Upadhyay, Shivendra
name: Urban, Ivan
name: Vaitiekėnas, Saulius
name: Van Hoogdalem, Kevin
name: Viazmitinov, Dmitrii V.
name: Waddy, Steven
name: Van Woerkom, David
name: Vogel, Dominik
name: Watson, John
name: Weston, Joseph
name: Winkler, Georg W.
name: Yang, Chung Kai
name: Yau, Sean
name: Yi, Daniel
name: Yucelen, Emrah
name: Webster, Alex
name: Zeisel, Roland
name: Zhao, Ruichen
Publisher: name: arXiv
Year: 2022
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences
subject: FOS: Physical sciences

description: We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
description: Final version