title: Ð§Ð¸ÑÐ»ÐµÐ½Ð½Ð¾Ðµ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÑÐµÐ¿Ð»Ð¾Ð¼Ð°ÑÑÐ¾Ð¿ÐµÑÐµÐ½Ð¾ÑÐ°, Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÑÑÑÐ¸Ñ ÑÑÑÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑ ÑÐ°Ð±Ð¾ÑÑ Ð³Ð°Ð·Ð¾ÑÐ°Ð·Ð½Ð¾Ð³Ð¾ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½Ð¾Ð³Ð¾ ÑÐµÐ°ÐºÑÐ¾ÑÐ°
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Numerical simulation of processes heat and mass transfer that determines efficiency gas-phase epitaxial reactor
Creators: name: ÐÐ°ÑÐ¿Ð¾Ð²Ð°, ÐÐ°ÑÑÑ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: ÐÐ°ÑÐµÐ¼Ð°ÑÐ¸ÑÐµÑÐºÐ¾Ðµ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ
ÐÑÐµÐ¼Ð½Ð¸Ð¹, ÐºÐ°ÑÐ±Ð¸Ð´Ñ
ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
epitaxy

description: Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð² Ð¸ ÑÑÑÑÐ¾Ð¹ÑÑÐ² ÑÑÐ°Ð»Ð° Ð¼Ð¾ÑÐ½Ð¾Ð¹ Ð´Ð²Ð¸Ð¶ÑÑÐµÐ¹ ÑÐ¸Ð»Ð¾Ð¹ ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¿ÑÐ¾Ð³ÑÐµÑÑÐ° Ð² ÑÐ¾Ð²ÑÐµÐ¼ÐµÐ½Ð½Ð¾Ð¼ Ð¾Ð±ÑÐµÑÑÐ²Ðµ. ÐÐ´Ð½Ð¸Ð¼ Ð¸Ð· Ð½Ð°Ð¸Ð±Ð¾Ð»ÐµÐµ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½ÑÑ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð², Ð°ÐºÑÐ¸Ð²Ð½Ð¾ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÐµÐ¼ÑÑ Ð² Ð¿ÑÐ¾Ð¸Ð·Ð²Ð¾Ð´ÑÑÐ²Ðµ ÑÐ¸Ð»Ð¾Ð²Ð¾Ð¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸ Ð² Ð½Ð°ÑÑÐ¾ÑÑÐµÐµ Ð²ÑÐµÐ¼Ñ, ÑÐ²Ð»ÑÐµÑÑÑ ÐºÐ°ÑÐ±Ð¸Ð´ ÐºÑÐµÐ¼Ð½Ð¸Ñ. ÐÐ´Ð½Ð¾Ð¹ Ð¸Ð· ÐºÐ»ÑÑÐµÐ²ÑÑ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¹ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ ÐºÐ°ÑÐ±Ð¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ ÑÐ²Ð»ÑÐµÑÑÑ Ð¼ÐµÑÐ¾Ð´ CVD (chemical vapor deposition â ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ðµ Ð¸Ð· Ð³Ð°Ð·Ð¾Ð²Ð¾Ð¹ ÑÐ°Ð·Ñ), Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÐµÐ¼ÑÐ¹ Ð´Ð»Ñ Ð³Ð¾Ð¼Ð¾ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¾ÑÐ¸Ð°Ð»ÑÐ½Ð¾Ð³Ð¾ Ð²ÑÑÐ°ÑÐ¸Ð²Ð°Ð½Ð¸Ñ ÑÐ»Ð¾Ñ SiC Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ. Ð Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÐµ Ð¾Ð¿Ð¸ÑÐ°Ð½Ñ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ ÑÐ¸ÑÐ»ÐµÐ½Ð½Ð¾Ð³Ð¾ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ Ð¿ÑÐ¾ÑÐµÑÑÐ° ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½Ð¾Ð³Ð¾ ÑÐ¾ÑÑÐ° SiC Ð² Ð²ÐµÑÑÐ¸ÐºÐ°Ð»ÑÐ½Ð¾Ð¼ ÑÐµÐ°ÐºÑÐ¾ÑÐµ. Ð ÐºÐ°ÑÐµÑÑÐ²Ðµ Ð¿ÑÐµÐºÑÑÑÐ¾ÑÐ¾Ð² Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÑÑÑÑ ÑÐ¸Ð»Ð°Ð½ Ð¸ Ð¿ÑÐ¾Ð¿Ð°Ð½. Ð¦ÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐµÑÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ð¸ Ð²ÑÐ¾Ð´Ð° ÑÐµÐ°ÐºÑÐ¾ÑÐ° Ð¸ ÑÐ°ÑÑÐ¾Ð´Ð¾Ð² Ð¿ÑÐµÐºÑÑÑÐ¾ÑÐ¾Ð² Ð½Ð° Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÑ Ð¿ÑÐ¾ÑÐ¸Ð»Ñ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ°. ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ° ÑÐ²Ð»ÑÐµÑÑÑ ÐºÐ»ÑÑÐµÐ²ÑÐ¼ ÑÐ°ÐºÑÐ¾ÑÐ¾Ð¼ ÐºÐ°ÑÐµÑÑÐ²Ð° Ð¿Ð¾Ð»ÑÑÐ°ÐµÐ¼Ð¾Ð³Ð¾ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð³Ð¾ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð°, Ð¿Ð¾ÑÑÐ¾Ð¼Ñ Ð²Ð¾Ð¿ÑÐ¾Ñ Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ð¸ ÑÐ°Ð±Ð¾ÑÑ ÑÐµÐ°ÐºÑÐ¾ÑÐ° Ð¾ÑÐµÐ½Ñ Ð²Ð°Ð¶ÐµÐ½. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¸, ÑÑÐ¾ Ð¾ÑÐµÐ½Ñ Ð²Ð°Ð¶Ð½Ð¾ ÑÑÐ¸ÑÑÐ²Ð°ÑÑ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐ¸ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸Ð¸ Ð½Ð° Ð²ÑÐ¾Ð´Ðµ Ð² ÑÐµÐ°ÐºÑÐ¾Ñ, Ð¿Ð¾ÑÐ¾Ð¼Ñ ÑÑÐ¾ Ð¾Ñ ÑÑÐ¾Ð³Ð¾ Ð·Ð°Ð²Ð¸ÑÐ¸Ñ ÑÐ¾ÑÐ¼Ð° Ð¿ÑÐ¾ÑÐ¸Ð»Ñ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ°. Ð¢Ð°ÐºÐ¶Ðµ Ð´Ð»Ñ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ñ ÑÑÐµÐ¿ÐµÐ½Ð¸ Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÐ¸ Ð¿Ð¾Ð»ÑÑÐ°ÐµÐ¼Ð¾Ð¹ Ð¿Ð»ÐµÐ½ÐºÐ¸ SiC Ð¿Ð¾Ð¼Ð¸Ð¼Ð¾ Ð²Ð°ÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸Ñ ÑÐ°ÑÑÐ¾Ð´Ð¾Ð² Ð¿ÑÐµÐºÑÑÑÐ¾ÑÐ¾Ð² Ð¼Ð¾Ð¶Ð½Ð¾ Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°ÑÑ ÑÐ¿Ð¾ÑÐ¾Ð± ÑÐ°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð³Ð°Ð·Ð¾Ð² Ð¿Ð¾ ÑÑÑÐ±Ð¾ÑÐºÐ°Ð¼ Ð¸Ð½Ð¶ÐµÐºÑÐ¾ÑÐ° Ð½Ð° Ð²ÑÐ¾Ð´Ðµ.
description: The development of semiconductor materials and devices has become a powerful driving force of technological progress in modern society. One of the most promising semiconductors actively used in the production of power electronics at the present time is silicon carbide. One of the key technologies for obtaining silicon carbide is the CVD (chemical vapor deposition) method, used for homoepitactic growth of the SiC layer on the substrate. This paper describes the results of numerical simulation of the process of epitaxial growth of SiC in a vertical reactor. Silane and propane are used as precursors. The aim of the work is to study the influence of the geometry of the reactor inlet and precursor flow rates on the uniformity of the growth rate profile. This characteristic is a key factor in the quality of the semiconductor material obtained, so the issue of optimizing the reactor operation is very important. Studies have shown that it is very important to take into account the geometry features at the reactor inlet, because the shape of the growth rate profile depends on it. Also, in order to increase the degree of uniformity of the resulting SiC film, in addition to varying the ratio of precursor costs, it is possible to optimize the method of gas distribution through the injector tubes at the inlet.