title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¸ Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ° Ð¼Ð¾ÑÐ½ÑÑ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð»Ð°Ð·ÐµÑÐ¾Ð² ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð¾Ð³Ð¾ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð° 1400-1600 Ð½Ð¼
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Study of the design of the active element high-power semiconductor lasers in the spectral range 1400-1600 nm
Creators: name: ÐÐ°ÑÑÐµÐ½ÐºÐ¾Ð²Ð°, ÐÐ½Ð°ÑÑÐ°ÑÐ¸Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¼Ð¾ÑÐ½ÑÐ¹ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÐ¹ Ð»Ð°Ð·ÐµÑ
Ð±ÐµÐ·Ð¾Ð¿Ð°ÑÐ½ÑÐ¹ Ð´Ð»Ñ Ð³Ð»Ð°Ð· ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½ÑÐ¹ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½
AlGaInAs/InP
Ð°ÑÐ¸Ð¼Ð¼ÐµÑÑÐ¸ÑÐ½Ð°Ñ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÐ°
Ð±Ð°ÑÑÐµÑÐ½ÑÐµ ÑÐ»Ð¾Ð¸
Ð¼ÐµÐ·Ð°Ð¿Ð¾Ð»Ð¾ÑÐºÐ¾Ð²Ð°Ñ ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ñ
Ð¼ÐµÐ»ÐºÐ°Ñ Ð¼ÐµÐ·Ð°
Ð³Ð»ÑÐ±Ð¾ÐºÐ°Ñ Ð¼ÐµÐ·Ð°
high-power semiconductor laser
eye-safe spectral range
asymmetric heterostructure
barrier layers
mesa-stripe design
shallow mesa
deep mesa

description: Ð ÑÐ°Ð±Ð¾ÑÐµ Ð¸Ð·ÑÑÐµÐ½Ñ Ð¼ÐµÑÐ¾Ð´Ñ ÑÐ»ÑÑÑÐµÐ½Ð¸Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ½ÑÑ Ð¸ Ð¿ÑÐ¾ÑÑÑÐ°Ð½ÑÑÐ²ÐµÐ½Ð½ÑÑ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ AlGaInAs/InP Ð»Ð°Ð·ÐµÑÐ¾Ð² Ð±ÐµÐ·Ð¾Ð¿Ð°ÑÐ½Ð¾Ð³Ð¾ Ð´Ð»Ñ Ð³Ð»Ð°Ð· ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð¾Ð³Ð¾ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð° 1400â1600 Ð½Ð¼. ÐÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ñ Ð½Ð° Ð¿ÑÐ°ÐºÑÐ¸ÐºÐµ ÑÐ¶Ðµ ÑÑÑÐµÑÑÐ²ÑÑÑÐ¸Ðµ Ð¼ÐµÑÐ¾Ð´Ñ, ÑÐ²ÑÐ·Ð°Ð½Ð½ÑÐµ Ñ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸ÐµÐ¼ Ð´Ð¸Ð·Ð°Ð¹Ð½Ð° Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÑ: Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ¸ÑÐ¾ÐºÐ¾Ð³Ð¾ Ð²Ð¾Ð»Ð½Ð¾Ð²Ð¾Ð´Ð°, ÑÐ¼ÐµÑÐµÐ½Ð¸Ðµ Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÐ¸ Ð¾ÑÐ½Ð¾ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ ÑÐµÐ½ÑÑÐ° Ð²Ð¾Ð»Ð½Ð¾Ð²Ð¾Ð´Ð°, Ð²Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ Ð±Ð°ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð¾ÑÐ². Ð¢Ð°ÐºÐ¶Ðµ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð° Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ÑÑÑ Ð¿Ð¾Ð²ÑÑÐµÐ½Ð¸Ñ ÑÑÑÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð³Ð¾ Ð´Ð¸Ð¾Ð´Ð° Ð·Ð° ÑÑÑÑ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð¼ÐµÐ·Ð°Ð¿Ð¾Ð»Ð¾ÑÐºÐ¾Ð²Ð¾Ð¹ ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¸. Ð­ÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð³Ð»ÑÐ±Ð¸Ð½Ñ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¼ÐµÐ· Ð½Ð° Ð²ÑÑÐ¾Ð´Ð½ÑÐµ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð³Ð¾ Ð´Ð¸Ð¾Ð´Ð°, Ð´Ð»Ñ ÑÑÐ¾Ð³Ð¾ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð¿Ð¾ÑÑÑÐ¾ÑÑÐ¾Ð²ÑÑ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¹ Ð¸Ð·Ð³Ð¾ÑÐ¾Ð²Ð»ÐµÐ½Ð¾ Ð´Ð²Ð° Ð½Ð°Ð±Ð¾ÑÐ° Ð»Ð°Ð·ÐµÑÐ½ÑÑ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² Ñ ÑÐ°Ð·Ð½Ð¾Ð¹ Ð³Ð»ÑÐ±Ð¸Ð½Ð¾Ð¹ Ð¼ÐµÐ·Ð°-ÐºÐ°Ð½Ð°Ð²Ð¾Ðº Ð¸ Ð¾ÑÑÑÐµÑÑÐ²Ð»ÑÐ½ ÐºÐ¾Ð¼Ð¿Ð»ÐµÐºÑ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ð¹, Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ð°Ð½Ð¸Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð² Ð¿ÑÐ¾Ð²ÐµÐ´ÑÐ½ ÑÑÐ°Ð²Ð½Ð¸ÑÐµÐ»ÑÐ½ÑÐ¹ Ð°Ð½Ð°Ð»Ð¸Ð·. ÐÐ¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ñ Â«Ð¼ÐµÐ»ÐºÐ°Ñ Ð¼ÐµÐ·Ð°Â» ÑÐ²Ð»ÑÐµÑÑÑ Ð½Ð°Ð¸Ð±Ð¾Ð»ÐµÐµ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐ½Ð¾Ð¹, ÑÐ°ÑÑÐ¾Ð´Ð¸Ð¼Ð¾ÑÑÑ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ ÑÐ¾ÑÑÐ°Ð²Ð¸Ð»Ð° 7.5â11.4 Ð³ÑÐ°Ð´., Ð´Ð¾ÑÑÐ¸Ð³Ð½ÑÑÐ° Ð¼Ð¾ÑÐ½Ð¾ÑÑÑ 2.43 ÐÑ. Ð£ÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¾, ÑÑÐ¾ ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ñ Â«Ð³Ð»ÑÐ±Ð¾ÐºÐ°Ñ Ð¼ÐµÐ·Ð°Â» Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ¸ÑÑÐµÑ Ð½Ð¸Ð·ÐºÐ¸Ð¹ Ð¿Ð¾ÑÐ¾Ð³Ð¾Ð²ÑÐ¹ ÑÐ¾Ðº Ð¸ Ð²ÑÑÐ¾ÐºÑÑ Ð¼Ð¾ÑÐ½Ð¾ÑÑÑ 2.55 ÐÑ, Ð½Ð¾ ÑÑÐµÐ±ÑÐµÑ ÑÐ»ÑÑÑÐµÐ½Ð¸Ñ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº Ð¸ Ð¾ÑÑÐ°Ð±Ð¾ÑÐºÐ¸ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ð¸Ð·Ð³Ð¾ÑÐ¾Ð²Ð»ÐµÐ½Ð¸Ñ.
description: In this paper, we study methods for improving the power and emission characteristics of semiconductor AlGaInAs/InP lasers in the eye-safe spectral range 1400â1600 nm. We apply in practice the well-known methods associated with changing the design of the heterostructure: the use of a wide waveguide, the displacement of the active region relative to the center of the waveguide, and the growth of barrier layers. The possibility of increasing the efficiency of a laser diode by creating a mesa-stripe design is shown. The influence of the etching depth of mesa on the output laser characteristics is analyzed. For this experiment we have made two sets of laser samples with different mesa depths and have measured their characteristics. We have compared the two constructions. It is shown that the "shallow mesa" design is the most technologically advanced, the radiation divergence is 7.5â11.4 deg., the power reaches 2.43 W. The âdeep mesaâ design demonstrates a low threshold current and a high power of 2.55 W. But it requires improving the optical characteristics and refinement of manufacturing techniques.