title: Ð¤Ð¸Ð·Ð¸ÑÐµÑÐºÐ¸Ðµ ÑÑÑÐµÐºÑÑ Ð¿ÑÐ¸ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð¼ ÑÐ¾ÑÐ¼Ð¾Ð²Ð°Ð½Ð¸Ð¸ ÑÑÑÑÐºÑÑÑÑ Si(p)/C60
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Physical effects during electrical forming of Si(p)/C60 structure
Creators: name: Ð§ÑÑÐ¸Ð½, ÐÐ¸ÐºÐ¾Ð»Ð°Ð¹
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: ÑÑÐ»Ð»ÐµÑÐµÐ½
ÑÑÐ»Ð»ÐµÑÐ¸Ñ
ÑÐ»ÐµÐºÑÑÐ¾ÑÐ¾ÑÐ¼Ð¾Ð²ÐºÐ°
Ð¿Ð»ÑÐ½ÐºÐ¸ ÑÑÐ»Ð»ÐµÑÐ¸ÑÐ° C60
Ð¿Ð¾Ð»Ð¸ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¸Ðµ Ð¿Ð»ÐµÐ½ÐºÐ¸ ÑÑÐ»Ð»ÐµÑÐ¸ÑÐ°
fullerene
fullerite
electroforming
C60 fullerite films
polycrystalline fullerite films

description: ÐÐ±ÑÐµÐºÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ â ÑÐ¾Ð½ÐºÐ¸Ðµ Ð¿Ð¾Ð»Ð¸ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¸Ðµ Ð¿Ð»ÐµÐ½ÐºÐ¸ ÑÑÐ»Ð»ÐµÑÐ¸ÑÐ° Ð¡60 Ð½Ð°Ð½ÐµÑÐµÐ½Ð½ÑÐµ Ð½Ð° ÑÐ¾Ð»Ð¾Ð´Ð½ÑÑ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÑ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÑ Ð¼Ð°ÑÐºÐ¸ ÐÐÐ-10. Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â ÑÑÑÐ°Ð½Ð¾Ð²Ð¸ÑÑ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð²Ð½ÐµÑÐ½ÐµÐ³Ð¾ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¿Ð¾Ð»Ñ Ð½Ð° ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ ÑÐ»ÐµÐºÑÑÐ¾ÑÐ¾ÑÐ¼Ð¾Ð²ÐºÐ¸ Si/C60 Ð¸ Ð¾ÑÐµÐ½Ð¸ÑÑ Ð²ÐºÐ»Ð°Ð´ Ð²Ð½ÑÑÑÐµÐ½Ð½Ð¸Ñ ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² Ð² ÑÑÐ¾Ñ ÑÐµÐ·ÑÐ»ÑÑÐ°Ñ. Ð ÑÐ¾Ð´Ðµ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð° Ð¸Ð·ÑÑÐµÐ½Ð° Ð½Ð°ÑÑÐ½Ð°Ñ Ð»Ð¸ÑÐµÑÐ°ÑÑÑÐ° Ð¿Ð¾ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ð¼ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ°Ð¼ ÑÑÐ»Ð»ÐµÑÐµÐ½Ð¾Ð², Ð° ÑÐ°ÐºÐ¶Ðµ Ð¾ Ð¿ÑÐ¸ÑÐ¾Ð´Ðµ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð²Ð¾Ð·Ð´ÐµÐ¹ÑÑÐ²Ð¸Ñ Ð² ÑÑÑÑÐºÑÑÑÐ°Ñ ÑÐ°ÐºÐ¾Ð³Ð¾ ÑÐ¸Ð¿Ð°. ÐÑÐ» Ð¾ÑÐ²Ð¾ÐµÐ½ Ð¼ÐµÑÐ¾Ð´ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð¹ ÑÐ¾ÑÐ¼Ð¾Ð²ÐºÐ¸ Ð¿Ð»ÐµÐ½Ð¾Ðº ÑÑÐ»Ð»ÐµÑÐ¸ÑÐ°, ÑÐ´ÐµÐ»Ð°Ð½Ñ Ð²ÑÐ²Ð¾Ð´Ñ Ð¸ ÑÑÐ¾ÑÐ¼ÑÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ñ Ð¿Ð¾Ð»Ð¾Ð¶ÐµÐ½Ð¸Ñ Ð¸ Ð¾ÑÐµÐ½ÐµÐ½Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ Ð´Ð»Ñ Ð²ÐµÑÐ¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¸ Ð´Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¿ÑÐ¾ÑÐµÑÑÐ°. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ ÑÐ°Ð±Ð¾ÑÑ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¾ ÐºÐ¾Ð¼Ð¿Ð»ÐµÐºÑÐ½Ð¾Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð²ÐµÐ»Ð¸ÑÐ¸Ð½Ñ Ð½Ð°Ð¿ÑÑÐ¶ÑÐ½Ð½Ð¾ÑÑÐ¸ Ð²Ð½ÐµÑÐ½ÐµÐ³Ð¾ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¿Ð¾Ð»Ñ Ð½Ð° Ð¿ÑÐ¾ÑÐµÑÑ ÑÐ»ÐµÐºÑÑÐ¾ÑÐ¾ÑÐ¼Ð¾Ð²ÐºÐ¸. ÐÐ·ÑÑÐµÐ½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð¿Ð¾Ð»ÑÑÐ½Ð¾ÑÑÐ¸ ÑÐ»ÐµÐºÑÑÐ¾Ð´Ð¾Ð² Ð½Ð° Ð²Ð¾Ð»ÑÑ-Ð°Ð¼Ð¿ÐµÑÐ½ÑÑ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÑ. Ð ÑÐ°Ð±Ð¾ÑÐµ ÑÐ´ÐµÐ»Ð°Ð½ Ð²ÑÐ²Ð¾Ð´ Ð¾ Ð¿ÑÐµÐ´Ð¿Ð¾Ð»Ð°Ð³Ð°ÐµÐ¼Ð¾Ð¹ Ð¿ÑÐ¸ÑÐ¾Ð´Ðµ ÑÐ²Ð»ÐµÐ½Ð¸Ñ, ÑÐ²ÑÐ·Ð°Ð½Ð½Ð¾Ð³Ð¾ Ñ Â«Soft BreakdownÂ» Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð¼. ÐÑÐºÐ»ÑÑÐµÐ½Ñ ÑÐ°ÐºÐ¸Ðµ ÑÐ°ÐºÑÐ¾ÑÑ ÐºÐ°Ðº Ð»Ð¾ÐºÐ°Ð»ÑÐ½ÑÐ¹ ÑÐ°Ð·Ð¾Ð³ÑÐµÐ² ÑÑÑÑÐºÑÑÑÑ, Ð¿Ð¾ÑÑÐµÐ´ÑÑÐ²Ð¾Ð¼ ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÐ°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð² ÑÑÑÑÐºÑÑÑÐµ Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½Ð¾Ð³Ð¾ Ð¾Ð±ÐµÑÐ¿ÐµÑÐµÐ½Ð¸Ñ Comsol Multiphysics, Ð° ÑÐ°ÐºÐ¶Ðµ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ ÐºÐ¾ÑÐ²ÐµÐ½Ð½ÑÑ Ð´Ð°Ð½Ð½ÑÑ Ð¿Ð¾Ð»ÐµÐ²Ð¾Ð¹ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¿Ð¾Ð´Ð²Ð¸Ð¶Ð½Ð¾ÑÑÐ¸ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÐµÐ¹ Ð·Ð°ÑÑÐ´Ð° Ð² ÑÐ¸Ð»ÑÐ½Ð¾Ð¼ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð¼ Ð¿Ð¾Ð»Ðµ. ÐÑÐºÐ»ÑÑÐµÐ½Ñ ÑÐ°ÐºÐ¸Ðµ ÑÐ°ÐºÑÐ¾ÑÑ ÐºÐ°Ðº Ð´Ð¸ÑÑÑÐ·Ð¸Ñ Ð¼Ð¾Ð»ÐµÐºÑÐ» O2.
description: The object of study is thin polycrystalline films of fullerite C60 deposited on cold silicon substrate of KDB-10 grade. The aim of this work is to establish the influence of external electric field parameters on the results of Si/C60 electroforming and to evaluate the contribution of internal physical processes to this result. In the course of this work, the scientific literature on the electrical characteristics of fullerenes, as well as on the nature of electrical action in structures of this type was studied. The method of electrical molding of fullerite films was mastered, conclusions were drawn and provisions were formulated and characteristics for verification of this process were evaluated. As a result of the work, a comprehensive study of the influence of the external electric field strength on the electroforming process was carried out. The influence of electrode polarity on the volt-ampere characteristic was studied. The paper concludes about the assumed nature of the phenomenon associated with the âSoft Breakdownâ process. Such factors as local heating of the structure are excluded by means of physical modeling of temperature distribution in the structure using Comsol Multiphysics software, as well as by means of indirect data of field dependence of charge carriers mobility in a strong electric field. Such factors as diffusion of O2 molecules were excluded.