Characterization of the Hamamatsu VUV4 MPPCs for nEXO
Creators: name: Gallina, G.
name: Giampa, P.
name: Retiere, F.
name: Kroeger, J.
name: Zhang, G.
name: Ward, M.
name: Margetak, P.
name: Lic, G.
name: Tsang, T.
name: Doria, L.
name: Kharusi, S. Al
name: Alfaris, M.
name: Anton, G.
name: Arnquist, I. J.
name: Badhrees, I.
name: Barbeau, P. S.
name: Beck, D.
name: Belov, V.
name: Bhatta, T.
name: Blatchford, J.
name: Brodsky, J. P.
name: Brown, E.
name: Brunner, T.
name: Cao, G. F.
name: Cao, L.
name: Cen, W. R.
name: Chambers, C.
name: Charlebois, S. A.
name: Chiu, M.
name: Cleveland, B.
name: Coon, M.
name: Craycraft, A.
name: Dalmasson, J.
name: Daniels, T.
name: Darroch, L.
name: Daugherty, S. J.
name: Croix, A. De St.
name: Der Mesrobian-Kabakian, A.
name: DeVoe, R.
name: Dilling, J.
name: Ding, Y. Y.
name: Dolinski, M. J.
name: Dragone, A.
name: Echevers, J.
name: Elbeltagi, M.
name: Fabris, L.
name: Fairbank, D.
name: Fairbank, W.
name: Farine, J.
name: Feyzbakhsh, S.
name: Fontaine, R.
name: Gautam, P.
name: Giacomini, G.
name: Gornea, R.
name: Gratta, G.
name: Hansen, E. V.
name: Heffner, M.
name: Hoppe, E. W.
name: Hoßl, J.
name: House, A.
name: Hughes, M.
name: Ito, Y.
name: Iverson, A.
name: Jamil, A.
name: Jewell, M. J.
name: Jiang, X. S.
name: Karelin, A.
name: Kaufman, L. J.
name: Kodroff, D.
name: Koffas, T.
name: Krucken, R.
name: Kuchenkov, A.
name: Kumar, K. S.
name: Lana, Y.
name: Larson, A.
name: Lenardo, B. G.
name: Leonarda, D. S.
name: Lik, S.
name: Li, Z.
name: Licciardi, C.
name: Linw, Y. H.
name: Lv, P.
name: MacLellan, R.
name: McElroy, T.
name: Medina-Peregrina, M.
name: Michel, T.
name: Mong, B.
name: Moore, D. C.
name: Murray, K.
name: Nakarmi, P.
name: Newby, R. J.
name: Ning, Z.
name: Njoya, O.
name: Nolet, F.
name: Nusair, O.
name: Odgers, K.
name: Odian, A.
name: Oriunno, M.
name: Orrell, J. L.
name: Ortega, G. S.
name: Ostrovskiy, I.
name: Overman, C. T.
name: Parent, S.
name: Piepkez, A.
name: Pocar, A.
name: Pratte, J. -F.
name: Qiu, D.
name: Radeka, V.
name: Raguzin, E.
name: Rescia, S.
name: Richman, M.
name: Robinson, A.
name: Rossignol, T.
name: Rowson, P. C.
name: Roy, N.
name: Saldanha, R.
name: Sangiorgio, S.
name: VIII, K. Skarpaas
name: Soma, A. K.
name: St-Hilaire, G.
name: Stekhanov, V.
name: Stiegler, T.
name: Sun, X. L.
name: Tarka, M.
name: Todd, J.
name: Tolba, T.
name: Totev, T. I.
name: Tsang, R.
name: Vachon, F.
name: Veeraraghavan, V.
name: Visser, G.
name: Vuilleumier, J. -L.
name: Wagenpfeil, M.
name: Walent, M.
name: Wang, Q.
name: Watkins, J.
name: Weber, M.
name: Wei, W.
name: Wen, L. J.
name: Wichoski, U.
name: Wu, S. X.
name: Wu, W. H.
name: Wu, X.
name: Xia, Q.
name: Yang, H.
name: Yang, L.
name: Yen, Y. -R.
name: Zeldovich, O.
name: Zhao, J.
name: Zhou, Y.
name: Ziegler, T.
Publisher: name: arXiv
Year: 2019
Subjects: subject: Instrumentation and Methods for Astrophysics (astro-ph.IM)
subject: Instrumentation and Detectors (physics.ins-det)
subject: FOS: Physical sciences
subject: FOS: Physical sciences

description: In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. SiPMs were characterized in the range $163 \text{ } \text{K} \leq \text{T}\leq 233 \text{ } \text{K}$. At an over voltage of $3.1\pm0.2$ V and at $\text{T}=163 \text{ }\text{K}$ we report a number of Correlated Avalanches (CAs) per pulse in the $1 \upmu\text{s}$ interval following the trigger pulse of $0.161\pm0.005$. At the same settings the Dark-Noise (DN) rate is $0.137\pm0.002 \text{ Hz/mm}^{2}$. Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at $\text{T}=233 \text{ }\text{K}$ for a mean wavelength of $189\pm7\text{ nm}$. At $3.6\pm0.2$ V and $3.5\pm0.2$ V of over voltage we report a PDE of $13.4\pm2.6\text{ }\%$ and $11\pm2\%$, corresponding to a saturation PDE of $14.8\pm2.8\text{ }\%$ and $12.2\pm2.3\%$, respectively. Both values are well below the $24\text{ }\%$ saturation PDE advertised by Hamamatsu. More generally, the second device tested at $3.5\pm0.2$ V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF SiPMs for the final design of the nEXO detector.