title: ÐÐ½Ð°Ð»Ð¸Ð· ÑÐ¿ÑÑÐ³Ð¸Ñ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ð¹ Ð¸ Ð¸Ð·Ð³Ð¸Ð±Ð°, Ð¸Ð½Ð´ÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÑ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ð¼ Ð¿Ð¾Ð»ÐµÐ¼, Ð² ÑÑÑÑÐºÑÑÑÐ°Ñ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð² ÑÐ¸Ð»Ð¾Ð²Ð¾Ð¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸
title: Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÑÐºÐ°Ñ ÑÐ°Ð±Ð¾ÑÐ°
titleType: Subtitle
Creators: name: Ð ÑÐ´ÐµÐ½ÐºÐ¾, ÐÐ½Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2016
Subjects: ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¿Ð¾Ð»Ñ
ÑÐ¸Ð»Ð¾Ð²Ð°Ñ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ°
Ð´Ð¸Ð¾Ð´Ñ Ð¨Ð¾ÑÑÐºÐ¸
p-i-nÐ´Ð¸Ð¾Ð´Ñ
Ð¨Ð¾ÑÑÐºÐ¸ Ð´Ð¸Ð¾Ð´Ñ
Ð·Ð°ÐºÐ¾Ð½ ÐÑÐºÐ°
ÐÑÐºÐ° Ð·Ð°ÐºÐ¾Ð½
ÐºÑÐ¸ÑÐµÑÐ¸Ð¹ ÐÑÐ¸ÑÑÐ¸ÑÑÐ°
ÐÑÐ¸ÑÑÐ¸ÑÑÐ° ÐºÑÐ¸ÑÐµÑÐ¸Ð¹
the electric field
power electronics

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¾Ð¼Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð²ÑÑÑÐ¾ÐµÐ½Ð½ÑÑ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð¾Ð»ÐµÐ¹ Ð½Ð° Ð¸Ð·Ð³Ð¸Ð± Ð¸ Ð½Ð°Ð¿ÑÑÐ¶ÑÐ½Ð½Ð¾Ðµ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ðµ ÑÐ¸Ð¿Ð¸ÑÐ½ÑÑ ÑÑÑÑÐºÑÑÑ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð² ÑÐ¸Ð»Ð¾Ð²Ð¾Ð¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸, ÑÐ°ÐºÐ¸Ñ ÐºÐ°Ðº Ð´Ð¸Ð¾Ð´Ð¾Ð² Ð¨Ð¾ÑÑÐºÐ¸ Ð¸ p-i-nÐ´Ð¸Ð¾Ð´Ð¾Ð², Ð¸Ð·Ð³Ð¾ÑÐ°Ð²Ð»Ð¸Ð²Ð°ÐµÐ¼ÑÑ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÐ¸ÑÐ¾ÐºÐ¾Ð·Ð¾Ð½Ð½ÑÑ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð² - ÐºÐ°ÑÐ±Ð¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð¸ Ð½Ð¸ÑÑÐ¸Ð´Ð¾Ð² III Ð³ÑÑÐ¿Ð¿Ñ. Ð Ð°Ð·Ð²Ð¸ÑÑÐµ Ð´Ð»Ñ ÑÑÐ¾Ð¹ ÑÐµÐ»Ð¸ Ð¼Ð¾Ð´ÐµÐ»Ð¸ ÑÑÐ¸ÑÑÐ²Ð°ÑÑ Ð²Ð·Ð°Ð¸Ð¼Ð¾ÑÐ²ÑÐ·Ñ Ð¼ÐµÑÐ°Ð½Ð¸ÑÐµÑÐºÐ¸Ñ Ð¸ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÑÑÐµÐºÑÐ¾Ð² Ð² ÑÑÐ¸Ñ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð°Ñ. ÐÐ»Ñ Ð½Ð°ÑÐ¾Ð¶Ð´ÐµÐ½Ð¸Ñ ÑÐ°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¿Ð¾Ð»Ñ Ð² ÑÑÑÑÐºÑÑÑÐ°Ñ Ð´Ð¸Ð¾Ð´Ð¾Ð² Ð¨Ð¾ÑÑÐºÐ¸ Ð¸ p-i-nÐ´Ð¸Ð¾Ð´Ð¾Ð² Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð»Ð¾ÑÑ Ð°Ð½Ð°Ð»Ð¸ÑÐ¸ÑÐµÑÐºÐ¾Ðµ ÑÐµÑÐµÐ½Ð¸Ðµ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ñ ÐÑÐ°ÑÑÐ¾Ð½Ð° Ð² Ð¿ÑÐ¸Ð±Ð»Ð¸Ð¶ÐµÐ½Ð¸Ð¸ Ð¾Ð±ÐµÐ´Ð½ÐµÐ½Ð½Ð¾Ð¹ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÑÐ¼Ð¸ Ð¾Ð±Ð»Ð°ÑÑÐ¸ Ð¿ÑÐ¾ÑÑÑÐ°Ð½ÑÑÐ²ÐµÐ½Ð½Ð¾Ð³Ð¾ Ð·Ð°ÑÑÐ´Ð° Ð¸ Ð¿Ð¾Ð»Ð½Ð¾ÑÑÑÑ Ð¸Ð¾Ð½Ð¸Ð·Ð¾Ð²Ð°Ð½Ð½Ð¾Ð¹ Ð¿ÑÐ¸Ð¼ÐµÑÐ¸. Ð£Ð¿ÑÑÐ³Ð¸Ðµ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ñ Ð¸ Ð´ÐµÑÐ¾ÑÐ¼Ð°ÑÐ¸Ð¸ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÑÐ»Ð¸ÑÑ Ð² Ð¿ÑÐ¸Ð±Ð»Ð¸Ð¶ÐµÐ½Ð¸Ð¸ Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½ÑÑ Ð´ÐµÑÐ¾ÑÐ¼Ð°ÑÐ¸Ð¹, Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¾Ð±Ð¾Ð±ÑÑÐ½Ð½Ð¾Ð³Ð¾ Ð·Ð°ÐºÐ¾Ð½Ð° ÐÑÐºÐ°. ÐÐ»Ñ Ð¾ÑÐµÐ½ÐºÐ¸ Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾Ð³Ð¾ ÑÐ°ÑÑÑÐµÑÐºÐ¸Ð²Ð°Ð½Ð¸Ñ ÑÑÑÑÐºÑÑÑ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð² ÑÐ¸Ð»Ð¾Ð²Ð¾Ð¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸ Ð¿ÑÐ¸Ð¼ÐµÐ½ÑÐ»ÑÑ ÐºÑÐ¸ÑÐµÑÐ¸Ð¹ ÐÑÐ¸ÑÑÐ¸ÑÑÐ°.
description: The work reports on theoretical study ofbuilt-in electric field impact on curvature and stress state of typical high-power electronic devices, like Schottky and p-i-n diodes, made of wide-bandgap semiconductors, silicon carbide and group-III nitrides. The models developed for this purpose account for the coupling of mechanical and electrical effects occurring in these materials. For calculating the electric field distributions in Schottky and p-i-n diode structures, analytical solution of the Poisson equation was used, assuming the space-charge regions to be completely depleted with carriers and donors/acceptors to be totally ionized. The elastic stress and strain were determined within the homogeneous-deformation approximation, using the generalized Hooke's law. The Griffits's criterion was applied to estimate the possibility of structure cracking because of the tensile stress.