cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
ESCAPE D5.1: Preliminary Report on Requirements for ESFRI Science Analysis Use Cases
Creators: name: Meyer-Zhao, Zheng
name: Grange, Yan
name: van Haarlem, Michiel
name: Groep, David
name: Bolton, Rosie
name: Dickinson, Hugh
name: Sánchez Expósito, Susana
name: Ramón Rodón, José
Publisher: name: Zenodo
Year: 2019

description: ESCAPE (European Science Cluster of Astronomy & Particle physics ESFRI research infrastructures) addresses the Open Science challenges shared by ESFRI facilities (SKA, CTA, KM3Net, EST, ELT, HL- LHC, FAIR) as well as other pan-European research infrastructures (CERN, ESO, JIVE) in astronomy and particle physics. ESCAPE actions are focused on developing solutions for the large data sets handled by the ESFRI facilities. These solutions shall: i) connect ESFRI projects to EOSC ensuring integration of data and tools; ii) foster common approaches to implement open-data stewardship; iii) establish interoperability within EOSC as an integrated multi-messenger facility for fundamental science. To accomplish these objectives ESCAPE aims to unite astrophysics and particle physics communities with proven expertise in computing and data management by setting up a data infrastructure beyond the current state-of-the-art in support of the FAIR principles. These joint efforts are expected result into a data-lake infrastructure as cloud open-science analysis facility linked with the EOSC. ESCAPE supports already existing infrastructure such as astronomy Virtual Observatory to connect with the EOSC. With the commitment from various ESFRI projects in the cluster, ESCAPE will develop and integrate the EOSC catalogue with a dedicated catalogue of open source analysis software. This catalogue will provide researchers across the disciplines with new software tools and services developed by astronomy and particle physics community. Through this catalogue ESCAPE will strive to cater researchers with consistent access to an integrated open- science platform for data-analysis workflows. As a result, a large community “foundation” approach for cross-fertilization and continuous development will be strengthened. ESCAPE has the ambition to be a flagship for scientific and societal impact that the EOSC can deliver.
Direct visualization of mechanical beats by means of an oscillating smartphone
Creators: name: Giménez, Marcos H.
name: Castro-Palacio, Juan C.
name: Monsoriu, Juan A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Physics Education (physics.ed-ph)
subject: FOS: Physical sciences

description: The resonance phenomenon is widely known from Physics courses. Qualitatively speaking, it takes place in a driven oscillating system whenever the driven frequency approaches the natural frequency. It is when the amplitude of the oscillations become maximal. Very closely related to this phenomenon, there is another which is very surprising too. It takes place when the driven and natural frequencies of the system are slightly different and interfere constructively and destructively, forming the so called beats. The frequency of the beats is just the difference of the interfering waves frequencies. Beats are very noticeable in acoustic systems. We all have probably perceived them in the form of periodic ups and downs in the sound intensity volume. There are several works in this journal on visualizing the beats in acoustic systems. For instance, the microphone and the speaker of two mobile devices were used in previous work to analyze the acoustic beat produced by two signals of close frequencies. The formation of beats can also be visualized in mechanical systems, such as a mass-spring system5 or a double driven string. Hereafter, the mechanical beats in a smartphone-spring system are directly visualized in a simple way. The frequency of the beats is measured by means of the acceleration sensor of a smartphone which hangs from a spring attached to a motor driver.
Experimental and numerical study of error fields in the CNT stellarator
Creators: name: Hammond, K. C.
name: Anichowski, A.
name: Brenner, P. W.
name: Pedersen, T. S.
name: Raftopoulos, S.
name: Traverso, P.
name: Volpe, F. A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Plasma Physics (physics.plasm-ph)
subject: FOS: Physical sciences

description: Sources of error fields were indirectly inferred in a stellarator by reconciling computed and numerical flux surfaces. Sources considered so far include the displacements and tilts (but not the deformations, yet) of the four circular coils featured in the simple CNT stellarator. The flux surfaces were measured by means of an electron beam and phosphor rod, and were computed by means of a Biot-Savart field-line tracing code. If the ideal coil locations and orientations are used in the computation, agreement with measurements is poor. Discrepancies are ascribed to errors in the positioning and orientation of the in-vessel interlocked coils. To that end, an iterative numerical method was developed. A Newton-Raphson algorithm searches for the coils' displacements and tilts that minimize the discrepancy between the measured and computed flux surfaces. This method was verified by misplacing and tilting the coils in a numerical model of CNT, calculating the flux surfaces that they generated, and testing the algorithm's ability to deduce the coils' displacements and tilts. Subsequently, the numerical method was applied to the experimental data, arriving at a set of coil displacements whose resulting field errors exhibited significantly improved quantitative and qualitative agreement with experimental results.
description: Special Issue on the 20th International Stellarator-Heliotron Workshop
Extending Solar Cell Efficiency Beyond 20% Using ENERGi Ion Implantation
Creators: name: Mandrell, L.
name: Huang, H.
name: Wang, Jb.
name: Wang, Jl.
name: Dong, Z.
name: Lv, J.
name: Zhu, R.
name: Sullivan, J.
name: Latchford, I.
name: Adibi, B.
name: Smith, C.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 881-884
description: Ion implantation has been running in solar cell high volume manufacturing lines for over one year
producing millions of cells. It is proven to deliver higher cell efficiency with lower cost of ownership than standard
diffusion lines. It also provides a more extendible path towards many of the new cell architectures such as PERC,
Bifacial and IBC, achieving >20% cell efficiency. Currently the Intevac ENERGi ion implant system has
successfully demonstrated industrial high efficiency phosphorus emitters of 19.7% with 644mV Voc on standard
screen printed mono-crystalline cells with lower cost of ownership than POCl3 diffusion process emitter flows.
Looking forward, the demonstrated ability to pattern dopants with ENERGi ion implant dramatically reduces the
process complexity and cost for advanced cells, such as IBC. This paper describes the capabilities of ENERGi ion
implantation for p bifacial and n-type and other cell structures requiring patterned doping, such as IBC cells. The
added benefit of single pass ion implant in improving emitter and reducing potential induced degradation (PID) is
also presented.
Emitter Layer Design by Thermal Diffusion Process for n-Type Crystalline Silicon Solar Cells
Creators: name: Harada, A.
name: Nakamura, K.
name: Kurachi, I.
name: Yoshioka, K.
name: Ikeno, N.
name: Ogura, A.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 900-903
description: Thermal diffusion process of boron for the emitter layer of N-type Si solar cells has been used.
Formation of the surface high B concentration layer (BRL: B-rich layer) causes the minority carrier recombination at
the surface. It was necessary to be removed by HF after the low-temperature thermal oxidation. We examined
optimum emitter layer formation process for the diffusion from APCVD BSG by combining the process and device
simulation. In concludions, it is apparent that the BRL lead to significant performance degradation. We found the
BRL free conditions both by simulation and experiment. Cell performances of “BRL etched” is almost the same as
“BRL free”. This is attributed to the fact that both profiles are similar. We can conclude the BRL free diffusion can
save a BRL removal etching process and therefore cost effective.
Energy Probability Distribution Zeros: A Route to Study Phase Transitions
Creators: name: Costa, B. V.
name: Mól, L. A. S.
name: Rocha, J. C. S.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Statistical Mechanics (cond-mat.stat-mech)
subject: FOS: Physical sciences

description: In the study of phase transitions a very few models are accessible to exact solution. In the most cases analytical simplifications have to be done or some numerical technique has to be used to get insight about their critical properties. Numerically, the most common approaches are those based in Monte Carlo simulations together finite size scaling analysis. The use of Monte Carlo techniques requires the estimate of quantities like the specific heat or susceptibilities in a wide range of temperature or the construction of the density of states in large intervals of energy. Although many of these techniques are well developed they may be very time consuming when the system size becomes large enough. It should be suitable to have a method that could surpass those difficulties. In this work we present an iterative method to study the critical behavior of a system based on the partial knowledge of the complex Fisher zeros set of the partition function. The method is general with advantages over most conventional techniques since it does not need to identify any order parameter \emph{a priori}. The critical temperature and exponents can be obtained with great precision even in the most unamenable cases like the two dimensional $XY$ model. To test the method and to show how it works we applied it to some selected models where the transitions are well known: The 2D Ising, Potts and XY models and to a homopolymer system. Our choice cover systems with first order, continuous and Berezinskii-Kosterlitz-Thouless transitions as well as the homopolymer that has two pseudo-transitions. The strategy can easily be adapted to any model, classical or quantum, once we are able to build the corresponding energy probability distribution.
description: 9 pages, 11 figures, 5 tables
Multilevel model for magnetic deflagration in nanomagnet crystals
Creators: name: Jukimenko, O.
name: Modestov, M.
name: Dion, C. M.
name: Marklund, M.
name: Bychkov, V.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: We extend the existing theoretical model for determining the characteristic features of magnetic deflagration in nanomagnet crystals. For the first time, all energy levels are accounted for calculation of the the Zeeman energy, the deflagration velocity, and other parameters. It reduces the final temperature and significantly changes the propagation velocity of the spin-flipping front. We also consider the effect of a strong transverse magnetic field, and show that the latter significantly modifies the spin-state structure, leading to an uncertainty concerning the activation energy of the spin flipping. Our front velocity prediction for a crystal of Mn$_{12}$-acetate in a longitudinal magnetic field is in much better agreement with experimental data than the previous reduced-model results.
Boron Emitter Passivation Process Improvement for High Efficiency Bifacial n-Type Silicon Solar Cells Fabrication
Creators: name: Semmache, B.
name: Focsa, A.
name: Picard, E.
name: Forster, M.
name: Nichiporuk, O.
name: Degoulange, J.
name: Knauss, H.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 859-862
description: In this work, we propose to investigate the potential of HF/O3 silicon cleaning process in
comparison with the usual HF/HCl solution. The cleaning performances are particularly evaluated for n-type Cz-Si
bifacial solar cells process technology. We also performed two different boron emitter surface passivation stacks
AlOx/SiNx and SiOx/SiNx in order to determine the thermal impact of SiO2 passivation in respect to the low temperature
APCVD process for AlOx. Symmetrical p+-n-p+ structures based on these passivation stacks are studied in terms of
implied Voc and emitter saturation current. Bifacial N-type silicon solar cells were finished by a well-optimized
metallization screen printing process and the electrical parameters were characterized by I-V measurements. Finally,
High efficiency bifacial solar cells ( >19,5% ) were developed by using the PV pilot line at Irysolar.
Unpolarized Transverse Momentum Dependent Parton Distribution and Fragmentation Functions at next-to-next-to-leading order
Creators: name: Echevarria, Miguel G.
name: Scimemi, Ignazio
name: Vladimirov, Alexey
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: The transverse momentum dependent parton distribution/fragmentation functions (TMDs) are essential in the factorization of a number of processes like Drell-Yan scattering, vector boson production, semi-inclusive deep inelastic scattering, etc. We provide a comprehensive study of unpolarized TMDs at next-to-next-to-leading order, which includes an explicit calculation of these TMDs and an extraction of their matching coefficients onto their integrated analogues, for all flavor combinations. The obtained matching coefficients are important for any kind of phenomenology involving TMDs. In the present study each individual TMD is calculated without any reference to a specific process. We recover the known results for parton distribution functions and provide new results for the fragmentation functions. The results for the gluon transverse momentum dependent fragmentation functions are presented for the first time at one and two loops. We also discuss the structure of singularities of TMD operators and TMD matrix elements, crossing relations between TMD parton distribution functions and TMD fragmentation functions, and renormalization group equations. In addition, we consider the behavior of the matching coefficients at threshold and make a conjecture on their structure to all orders in perturbation theory.
description: 40 pages, 2 figures. v2: minor changes, accepted for publication in JHEP. v3: typo corrected in eq.(2.21), results unchanged
High Efficiency Thin Silicon Solar Cells
Creators: name: Akhmedov, F.A.
name: Kagan, M.B.
name: Nekrasov, V.A.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 904-907
description: In this paper it is shown the possibility of refinement of silicon solar cells without reducing
the efficiency of conversion. The aim is achieved by formation of small, about 1 micron and uniform
texture on the front surface. Such texture limits the scope of carriers generation near the surface of the cell
that is important not only to reduce the thickness of the device, but also to improve the collection of the
generated carriers. Solar cells were manufactured with a size 50*50 mm and a thickness of about 100
microns on silicon wafers with p-type conductivity 3 ohm.sm. BSF was created by ion implantation of
boron and surface passivation was carried out by two-layer coating of SiO2 and SiNx. The efficiency of
conversion of the manufactured cells was higher than 18 % under the standard conditions.
Relevance of the irreversible degradation of superconducting Nb3Sn wires and cables caused by transverse stress at room temperature within the FCC study at CERN
Creators: name: Ebermann Patrick
Publisher: name: Zenodo
Year: 2020
Subjects: superconductivity, cryogenics, Nb3Sn, multi-filamentary wire, Rutherford cable, transverse stress, irreversible degradation, critical current measurements, magnetisation measurement, metallographic preparation, accelerator magnets

description: Within this thesis, the irreversible degradation of superconducting Nb3Sn wires and cables caused by transverse stress at room temperature was analysed in the frame of the FCC study at CERN. First, stress was exerted on Rutherford cables at room temperature and their performance was measured with the FRESCA cable test station at low temperature to obtain results under conditions mimicking the real situation during magnet assembly. Subsequently, tests with single Nb3Sn wires were performed to analyse the cause of degradation. To deliver measurement data metallographic techniques were elaborated and refined as well as a cryostat for transport current measurements close the critical temperature was build and tested to additionally imitate a cryogenic refrigerator system (cryocooler). The study was supplementary extended by magnetisation measurements using a SQUID magnetometer as well as FEM analysis of wires and cables based on X-ray tomography. The gained results were compared with other scientific investigations and one of the commonly-used scaling laws. Moreover, the implementation of the transport current measurements for wires under the defined requirements using a cryocooler was assessed.
Fermionic Modular Categories and the 16-fold Way
Creators: name: Bruillard, Paul
name: Galindo, Cesar
name: Hagge, Tobias
name: Ng, Siu-Hung
name: Plavnik, Julia Yael
name: Rowell, Eric C.
name: Wang, Zhenghan
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Algebra (math.QA)
subject: FOS: Mathematics
subject: 18D10

description: We study spin and super-modular categories systematically as inspired by fermionic topological phases of matter, which are always fermion parity enriched and modelled by spin TQFTs at low energy. We formulate a $16$-fold way conjecture for the minimal modular extensions of super-modular categories to spin modular categories, which is a categorical formulation of gauging the fermion parity. We investigate general properties of super-modular categories such as fermions in twisted Drinfeld doubles, Verlinde formulas for naive quotients, and explicit extensions of $PSU(2)_{4m+2}$ with an eye towards a classification of the low-rank cases.
description: Latest post-referee version. Many typos fixed, many explanations expanded, several inconsistencies corrected. 8 figures
Front Side Improvements for n-Pasha Solar Cells
Creators: name: Janssen, G.J.M.
name: Koppes, M.
name: Komatsu, Y.
name: Anker, J.
name: Liu, J.
name: Gutjahr, A.
name: Mewe, A.A.
name: Tool, C.J.J.
name: Romijn, I.G.
name: Siareyeva, O.
name: Ernst, M.
name: Van De Loo, B.
name: Kessels, W.M.M.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 812-815
description: We present a new approach to improve the efficiency of n-type solar cells by tuning the boron emitter
doping profile and optimizing the surface passivation. The boron emitter profile is tuned using a new method of just
etching the surface by 10-30 nm. The etching was carried out after diffusion and glass removal. This resulted in a
boron emitter without boron depletion at the surface, a higher VOC by 6 mV and a higher efficiency by 0.2% absolute.
To improve the surface passivation, we found that a very high implied VOC of 680±2 mV can be obtained with an
improved pre-cleaning followed by a wet chemical surface oxidation and ALD Al2O3 capped with PECVD-SiNx.
Dielectric response and novel electromagnetic modes in three-dimensional Dirac semimetal films
Creators: name: Kotov, Oleg V.
name: Lozovik, Yurii E.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: Using the Kubo formalism we have calculated the local dynamic conductivity of a bulk, i.e., three-dimensional (3D), Dirac semimetal (BDS). We obtain that at frequencies lower than Fermi energy the metallic response in a BDS film manifests in the existence of surface-plasmon polaritons, but at higher frequencies the dielectric response is dominated and it occurs that a BDS film behaves as a dielectric waveguide. At this dielectric regime we predict the existence inside a BDS film of novel electromagnetic modes, a 3D analog of the transverse electric waves in graphene. We also find that the dielectric response manifests as the wide-angle passband in the mid-infrared (IR) transmission spectrum of light incident on a BDS film, which can be used for the interferenceless omnidirectional mid-IR filtering. The tuning of the Fermi level of the system allows us to switch between the metallic and the dielectric regimes and to change the frequency range of the predicted modes. This makes BDSs promising materials for photonics and plasmonics.
description: 12 pages, 8 figures
The Effect of Alloying Conditions on the Formation of Al-p+ Emitter for n-Type Silicon Solar Cells
Creators: name: Chang, T.-J.
name: Chen, S.H.T.
name: Shen, C.-Y.
name: Su, S.-P.
name: Cheng, L.-W.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 848-850
description: The effect of alloying conditions on the formation
of Al-p+ emitter is investigated by realizing the alloying processes
in terms of correlations between emitter and eutectic layer
thickness. The emitter thickness and homogeneity are discussed
by implementing various combinations of ramping and cooling
conditions. The overall thicknesses of Al-emitter and Al-Si
eutectic are determined mainly by ramping condition. The
samples with thicker emitter can be found either on strong
ramping or slow cooling conditions. The J0e of non-passivated p+
layer is achieved at 211 fA/cm2 with the moderate alloying
condition. Based on the theoretical calculations, the N-type nonpassivated
rear junction solar cells with open circuit voltage at
650mV high are achievable.
Index Terms — n-type solar cell, Al-alloyed emitter, screenprinting.
Direct inversion from partial-boundary data in electrical impedance tomography
Creators: name: Hauptmann, Andreas
name: Santacesaria, Matteo
name: Siltanen, Samuli
Publisher: name: arXiv
Year: 2016
Subjects: subject: Numerical Analysis (math.NA)
subject: FOS: Mathematics
subject: 65N21 (primary), 94A08, 35J25 (secondary)

description: In Electrical Impedance Tomography (EIT) one wants to image the conductivity distribution of a body from current and voltage measurements carried out on its boundary. In this paper we consider the underlying mathematical model, the inverse conductivity problem, in two dimensions and under the realistic assumption that only a part of the boundary is accessible to measurements. In this framework our data are modeled as a partial Neumann-to-Dirichlet map (ND map). We compare this data to the full-boundary ND map and prove that the error depends linearly on the size of the missing part of the boundary. The same linear dependence is further proved for the difference of the reconstructed conductivities -- from partial and full boundary data. The reconstruction is based on a truncated and linearized D-bar method. Auxiliary results include an extrapolation method to obtain the full-boundary data from the measured one, an approximation of the complex geometrical optics solutions computed directly from the ND map as well as an approximate scattering transform for reconstructing the conductivity. Numerical verification of the convergence results and reconstructions are presented for simulated test cases.
Co-Diffused APCVD Boron Rear Emitter with Selectively Etched-Back FSF for Industrial n-Type Si Solar Cells
Creators: name: Schiele, Y.
name: Book, F.
name: Demberger, C.
name: Jiang, K.
name: Hahn, G.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 821-824
description: The employment of a B-doped atmospheric pressure chemical vapor deposited (inline belt APCVD)
borosilicate glass is an elegant technology for industrially realizing a p+ emitter. By drive-in of B and a subsequent
POCl3 co-diffusion, p+ emitter and n+ front surface field (FSF) are established in a single process step.
APCVD-SiOx is used to prevent the p+ emitter from being compensated during P diffusion. Its thickness needs to be
adapted in order not to affect the p+ profile during POCl3 diffusion while keeping it removable.
For rear junction solar cells, it is crucial to ensure low recombination activity at the front. Therefore, a selectively
etched-back FSF is to be established in the solar cell. An adjusted etch-back solution increases n+ Rsheet successively
and well controllably, accompanied by a drastic j0FSF reduction while simultaneously almost completely maintaining
p+ Rsheet. A 43 /sq APCVD-AlOx passivated p+ emitter achieves j0E of only 52 fA/cm2. Total implied VOC of a
pseudo solar cell structure attains up to 695 mV.
The newly developed APCVD p+ emitter combined with the co-diffused and selectively etched-back FSF employed
in an industrial n-type solar cell achieves 18.8% efficiency in a first experiment being still limited by a poor Ag/Al
contact to the B-emitter.
Numerically Optimized Double Layer Antireflective Coating for High Efficiency Interdigitated Back Contact (IBC) Silicon Solar Cells
Creators: name: Zielinski, B.
name: Florakis, A.
name: O’Sullivan, B.
name: Sleeckx, E.
name: Posthuma, N.
name: Aleman, M.
name: Singh, S.
name: Debucquoy, M.
name: Alajmi, F.
name: Mertens, R.
name: Poortmans, J.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 834-837
description: We demonstrate a numerically optimized double layer antireflective coating
(DLARC) composed of dielectric materials, the application of which led to the imec best IBC solar cell of 23.4 [%].
Synthesis, optimization procedures and technological aspects were investigated in the context of application of the
DLARC to the existing IBC cell architecture at imec. The numerical simulation results are demonstrated on both
planar and textured surfaces. Good agreement with experimental data is obtained. Subsequently, the influence of
deposition error posed by industrial PECVD deposition on the spectral characteristics of the front reflectance is
investigated numerically, and confirmed experimentally. The constraints for stable, repetitive deposition of such
multilayer coating are extracted. Finally, the design was tested on the cell level yielding 0.26 [%] average, absolute
efficiency gain. The cell were 4 [cm2] in size, manufactured on Czochralski-grown silicon.
Computing GIT-fans with symmetry and the Mori chamber decomposition of $\bar{M}_{0,6}$
Creators: name: Boehm, Janko
name: Keicher, Simon
name: Ren, Yue
Publisher: name: arXiv
Year: 2016
Subjects: subject: Algebraic Geometry (math.AG)
subject: Commutative Algebra (math.AC)
subject: Combinatorics (math.CO)
subject: FOS: Mathematics
subject: 14L24 (Primary), 13A50, 14Q99, 13P10, 68W10 (Secondary)

description: We propose an algorithm to compute the GIT-fan for torus actions on affine varieties with symmetries. The algorithm combines computational techniques from commutative algebra, convex geometry and group theory. We have implemented our algorithm in the Singular library gitfan.lib. Using our implementation, we compute the Mori chamber decomposition of the cone of movable divisors of $\bar{M}_{0,6}$.
description: 16 pages, 4 figures, 2 tables, minor revisions
Sub-Grain Boundaries Sources And Effects in Large Mono-Like Silicon Ingots For PV
Creators: name: Amaral De Oliveira, V.
name: Tsoutsouva, M.
name: Lafford, T.
name: Pihan, E.
name: Barou, F.
name: Cayron, C.
name: Camel, D.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 793-797
description: Mono-like silicon growth had recently been established as a low cost alternative for the growth of high
quality quasi-monocrystalline ingots. The growth of industrial size ingots, however, faces new sources of structural
defects that declines de properties of the material. Besides the expected increase in thermo-mechanical stress during
growth and final cooling, we have observed indentation on seeds by sharp feedstock and crystallographic mismatch
between seeds as main sources of sub-grain boundaries nucleation in mono-like ingots. In the present work, indentation
on seed by feedstock is shown to cause damages in seeds responsible to create sub-grain boundaries when growth
begins. Using interrupted crystallization, the propagation of deformed bands from the contact points between seed
surface and remained feedstock is visible by PL imaging. Moreover, we study the influence of each misorientation
component (x, y, z) on the formation of a sub-grain boundary in very low misoriented seeds (< 0.1°). It is shown
that while twist X and tilt Y remains stable as growth proceeds, tilt Z increases its misorientation continuously. The
rotation of the sub-grain boundary around the growth direction is also visible by EBSD pole figures applied in different
height of a chosen defective zone.
>10ms Carrier Lifetimes on Thermal Donor-Doped Cz Wafers : Application to Heterojunction Solar Cells
Creators: name: Jay, F.
name: Veirman, J.
name: Tomassini, M.
name: Peyronnet-Dremière, R.
name: Danel, A.
name: Cascant, M.
name: Denis, C.
name: Stadler, J.
name: Helleboid, J.-C.
name: Muñoz, D.
name: Dubois, S.
name: Jouini, A.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 798-803
description: Doping of the silicon feedstock with intentional elements – in general boron or phosphorus – is an
essential step to control the final ingot resistivity. Dopants are in general introduced in the form of powders, or highly
doped wafers usually taken from ingots crystallized for this purpose. On top of the required management of these
doping sources, the doping step leads to an inherent longitudinal resistivity variation due to the dopant segregation.
Furthermore, uncontrolled contaminations with metallic and light elements can be introduced during this step which
in turns affects the bulk quality and the cell efficiency. To circumvent these issues, we investigate the potential of
Czochralski wafers produced from electronic-grade silicon feedstocks without dopants addition, for the fabrication of
high efficiency hydrogenated amorphous silicon/crystalline silicon heterojunction n-type solar cells with adjusted
bulk resistivity. The resistivities of the produced wafers were accurately controlled by oxygen-related thermal donor
activation. High bulk qualities were obtained, characterized by measured carrier lifetimes greater than 10
milliseconds and solar cell efficiencies above 20% on industrial area wafer. We highlight that the radial homogeneity
of the doping (and thus of the oxygen content) is likely to be a key to achieve higher efficiencies.
Multi-object Classification via Crowdsourcing with a Reject Option
Creators: name: Li, Qunwei
name: Vempaty, Aditya
name: Varshney, Lav R.
name: Varshney, Pramod K.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Machine Learning (cs.LG)
subject: FOS: Computer and information sciences

description: Consider designing an effective crowdsourcing system for an $M$-ary classification task. Crowd workers complete simple binary microtasks whose results are aggregated to give the final result. We consider the novel scenario where workers have a reject option so they may skip microtasks when they are unable or choose not to respond. For example, in mismatched speech transcription, workers who do not know the language may not be able to respond to microtasks focused on phonological dimensions outside their categorical perception. We present an aggregation approach using a weighted majority voting rule, where each worker's response is assigned an optimized weight to maximize the crowd's classification performance. We evaluate system performance in both exact and asymptotic forms. Further, we consider the setting where there may be a set of greedy workers that complete microtasks even when they are unable to perform it reliably. We consider an oblivious and an expurgation strategy to deal with greedy workers, developing an algorithm to adaptively switch between the two based on the estimated fraction of greedy workers in the anonymous crowd. Simulation results show improved performance compared with conventional majority voting.
description: two column, 15 pages, 8 figures, submitted to IEEE Trans. Signal Process
Riemannian SVRG: Fast Stochastic Optimization on Riemannian Manifolds
Creators: name: Zhang, Hongyi
name: Reddi, Sashank J.
name: Sra, Suvrit
Publisher: name: arXiv
Year: 2016
Subjects: subject: Optimization and Control (math.OC)
subject: Machine Learning (cs.LG)
subject: FOS: Mathematics
subject: FOS: Computer and information sciences

description: We study optimization of finite sums of geodesically smooth functions on Riemannian manifolds. Although variance reduction techniques for optimizing finite-sums have witnessed tremendous attention in the recent years, existing work is limited to vector space problems. We introduce Riemannian SVRG (RSVRG), a new variance reduced Riemannian optimization method. We analyze RSVRG for both geodesically convex and nonconvex (smooth) functions. Our analysis reveals that RSVRG inherits advantages of the usual SVRG method, but with factors depending on curvature of the manifold that influence its convergence. To our knowledge, RSVRG is the first provably fast stochastic Riemannian method. Moreover, our paper presents the first non-asymptotic complexity analysis (novel even for the batch setting) for nonconvex Riemannian optimization. Our results have several implications; for instance, they offer a Riemannian perspective on variance reduced PCA, which promises a short, transparent convergence analysis.
description: This is the final version that appeared in NIPS 2016. Our proof of Lemma 2 was incorrect in the previous arXiv version. (9 pages paper + 6 pages appendix)
On the Correlation of Surface Roughness to Mechanical Strength and Reflectivity of Silicon Wafers
Creators: name: Oswald, M.
name: Löwenstein, T.
name: Anspach, O.
name: Hirsch, J.
name: Lausch, D.
name: Schoenfelder, S.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 764-768
description: During the production of silicon wafers and solar cells, a wafer’s surface is altered by different process
steps, such as wire sawing or texturing. However, the surface not only influences a wafer’s mechanical and optical
properties, but also that of the resulting solar cell. In these investigations, mechanical strength, reflectivity and surface
roughness of four different types of wafers was measured and correlated to each other. Therefore, wafers processed by
F600 and F1000 grain sized slurry based wire sawing were compared, whereas one half underwent a texturing step and
the other half was left as-cut. Further, all parameters were analysed depending on their location between entry and exit of
the sawing wire. Results show a clear dependence of fracture stress and roughness between different surface types, as
well as between wire entry and exit of the wafer. Mechanical strength is significantly higher for F1000 sawn wafers
(smaller SiC grain size) and increases after texturing step for both F600 and F1000 wafers. The mechanical strength
differs locally on the wafer, increasing from sawing wire entry to exit. This effect can be observed for F600 and F1000 as
well as for as-cut and texturized wafers. A correlation of decreasing roughness to increasing fracture strength can be
made, which, however, only applies within a single type of surface. Reflectivity of wafers strongly depends on initial
surface topology. Whereas etched F600 wafers show decreased reflectivity, reflectivity increases after F1000 wafer were
etched, which needs to be considered for solar cell production.
Letter from Paul Monroe to William Elliot Griffis, December 22, 1911
Creators: name: Monroe, Paul
Publisher: name: No Publisher Supplied
Year: 1911

description: Accepts Griffis' offer to contribute to the Cyclopedia of Education. Requests a short (1000-1500 word) article on Education in Korea, focusing on history, traditional systems of education, and the present situation (including missionary schools).
Large time behaviour of solutions to parabolic equations with Dirichlet operators and nonlinear dependence on measure data
Creators: name: Klimsiak, Tomasz
name: Rozkosz, Andrzej
Publisher: name: arXiv
Year: 2016
Subjects: subject: Analysis of PDEs (math.AP)
subject: FOS: Mathematics
subject: 35B40, 35K58 (Primary), 60H30 (Secondary)

description: We study large time behaviour of solutions of the Cauchy problem for equations of the form $\partial_tu-L u+λu=f(x,u)+g(x,u)\cdotμ$, where $L$ is the operator associated with a regular lower bounded semi-Dirichlet form ${\mathcal{E}}$ and $μ$ is a nonnegative bounded smooth measure with respect to the capacity determined by ${\mathcal{E}}$. We show that under the monotonicity and some integrability assumptions on $f,g$ as well as some assumptions on the form ${\mathcal{E}}$, $u(t,x)\rightarrow v(x)$ as $t\rightarrow\infty$ for quasi-every $x$, where $v$ is a solution of some elliptic equation associated with our parabolic equation. We also provide the rate convergence. Some examples illustrating the utility of our general results are given.
Sprayed Phosphoric Acid as Dopant Source for n-Type Silicon Ribbons
Creators: name: Almeida Silva, J.A.
name: Platte, B.
name: Pó, J.M.
name: Maia Alves, J.
name: Brito, M.C.
name: Vallêra, A.M.
name: Serra, J.M.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 710-713
description: A new method to dope silicon ribbons with phosphorous is presented. The method is based on the
spraying of the samples with a phosphoric acid (H3PO4) solution and a recrystallization on an optical furnace. The
efficiency of the doping method is demonstrated, although most of samples showed a significant incorporation
gradient along the length. The reasons for this gradient were analysed, and the dependence of the phosphorous
incorporation rate on the argon flux, recrystallization velocity and direction was studied. The phosphorous
concentration gradient can be severely reduced if the samples are recrystallized in a downward direction. Samples
recrystallized in this direction have homogeneous doping profiles over most of the length.
Tricomplex dynamical systems generated by polynomials of even degree
Creators: name: Parisé, Pierre-Olivier
name: Ransford, Thomas
name: Rochon, Dominic
Publisher: name: arXiv
Year: 2016
Subjects: subject: General Mathematics (math.GM)
subject: FOS: Mathematics
subject: 37F50, 32A30, 30G35, 00A69

description: In this article, we give the exact interval of the cross section of the Multibrot sets generated by the polynomial $z^p+c$ where $z$ and $c$ are complex numbers and $p \geq 2$ is an even integer. Furthermore, we show that the same Multibrots defined on the hyperbolic numbers are always squares. Moreover, we give a generalized 3D version of the hyperbolic Multibrot set and prove that our generalization is an octahedron for a specific 3D slice of the tricomplex polynomial $η^p+c$ where $p \geq 2$ is an even integer.
description: arXiv admin note: substantial text overlap with arXiv:1511.02249
Nearly Optimal Measurement Scheme in a Noisy Mach-Zehnder Interferometer with Coherent and Squeezed Vacuum
Creators: name: Gard, Bryan T.
name: You, Chenglong
name: Mishra, Devendra K.
name: Singh, Robinjeet
name: Lee, Hwang
name: Corbitt, Thomas R.
name: Dowling, Jonathan P.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: The use of an interferometer to perform an ultra-precise parameter estimation under noisy conditions is a challenging task. Here we discuss nearly optimal measurement schemes for a well known,sensitive input state, squeezed vacuum and coherent light. We find that a single mode intensity measurement, while the simplest and able to beat the shot-noise limit, is outperformed by other measurement schemes in the low-power regime. However, at high powers, intensity measurement is only outperformed by a small factor. Specifically, we confirm, that an optimal measurement choice under lossless conditions is the parity measurement. In addition, we also discuss the performance of several other common measurement schemes when considering photon loss, detector efficiency, phase drift, and thermal photon noise. We conclude that, with noise considerations, homodyne remains near optimal in both the low and high power regimes. Surprisingly, some of the remaining investigated measurement schemes, including the previous optimal parity measurement, do not remain even near optimal when noise is introduced.
description: 8 pages, 5 figures
Prediction-Based Task Assignment in Spatial Crowdsourcing (Technical Report)
Creators: name: Cheng, Peng
name: Lian, Xiang
name: Chen, Lei
name: Shahabi, Cyrus
Publisher: name: arXiv
Year: 2015
Subjects: subject: Databases (cs.DB)
subject: FOS: Computer and information sciences

description: Spatial crowdsourcing refers to a system that periodically assigns a number of location-based workers with spatial tasks nearby (e.g., taking photos or videos at some spatial locations). Previous works on the spatial crowdsourcing usually designed task assignment strategies that maximize some assignment scores, which are however only based on available workers/tasks in the system at the time point of assigning workers/tasks. These strategies may achieve local optimality, due to the neglect of future workers/tasks that may join the system. In contrast, in this paper, we aim to achieve "globally" optimal task assignments, by considering not only those present, but also future (via predictions), workers/tasks. Specifically, we formalize an important problem, namely prediction-based spatial crowdsourcing (PB-SC), which expects to obtain a "globally" optimal strategy for worker-and-task assignments, over both present and predicted task/worker locations, such that the total assignment quality score is maximized under the constraint of the traveling budget. In this paper, we design an effective grid-based prediction method to estimate spatial distributions of workers/tasks in the future, and then utilize the predicted ones in our procedure of task assignments. We prove that the PB-SC problem is NP-hard, and thus intractable. Therefore, we propose efficient approximate algorithms to tackle the PB-SC problem, including greedy and divide-and-conquer (D&C) approaches, which can efficiently assign workers to spatial tasks with high quality scores and low budget consumptions, by considering both current and future task/worker distributions. Through extensive experiments, we demonstrate the efficiency and effectiveness of our PB-SC processing approaches on real/synthetic data.
description: 15 pages
Solvable multistate model of Landau-Zener transitions in cavity QED
Creators: name: Sinitsyn, Nikolai A.
name: Li, Fuxiang
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Mathematical Physics (math-ph)
subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: We consider the model of a single optical cavity mode interacting with two-level systems (spins) driven by a linearly time-dependent field. When this field passes through values at which spin energy level splittings become comparable to spin coupling to the optical mode, a cascade of Landau-Zener (LZ) transitions leads to co-flips of spins in exchange for photons of the cavity. We derive exact transition probabilities between different diabatic states induced by such a sweep of the field.
description: 12 pages, 9 figures
Novel insights into the lipid network of plasma extracellular vesicles reveal sex-based differences in the lipidomic profile of alcohol use disorder patients
Creators: name: Perpiñá-Clérigues, Carla
name: Mellado, Susana
name: Galiana-Roselló, Cristina
name: Fernández-Regueras, María
name: Marcos, Miguel
name: García-García, Francisco
name: Pascual, María
Publisher: name: Zenodo
Year: 2023
Subjects: lipidomics
lipid network
extracellular vesicles
alcohol use disorder
sex-based differences

description: Code and data used for the bioinformatics approach.  language R Contains the code used to carry out this project. It presents the different sections: 00Data 01Functions 02Preprocessing_&_ExploratoryAnalysis 03DifferentialAbundanceAnalysis 04ClassAnnotation 05LSEA 06LINEX
Attenuation and amplification of the transient current in nanojunctions with time-varying gate potentials
Creators: name: Cuansing, Eduardo C.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Statistical Mechanics (cond-mat.stat-mech)
subject: FOS: Physical sciences

description: We study charge transport in a source-channel-drain system with a time-varying applied gate potential acting on the channel. We calculate both the current flowing from the source into the channel and out of the channel into the drain. The current is expressed in terms of nonequilibrium Green's functions. These nonequilibrium Green's functions can be determined from the steady-state Green's functions and the equilibrium Green's functions of the free leads. We find that the application of the gate potential can induce current to flow even when there is no source-drain bias potential. However, the direction of the current from the source and the current to the drain are opposite, thereby resulting in no net current flowing within the channel. When a source-drain bias potential is present, the net current flowing to the source and drain can either be attenuated or amplified depending on the sign of the applied gate potential. We also find that the response of the system to a dynamically changing gate potential is not instantaneous, i.e., a relaxation time has to pass before the current settles into a steady value. In particular, when the gate potential is in the form of a step function, the current first overshoots to a maximum value, oscillates, and then settles down to a steady-state value.
description: Version accepted for publication in Int. J. Mod. Phys. B