title: Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° SiGe ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ñ Ð¿Ð¾Ð²ÑÑÐµÐ½Ð½ÑÐ¼ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸ÐµÐ¼ Ð¿Ð¸ÑÐ°Ð½Ð¸Ñ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Development of a SiGe power amplifier with increased supply voltage
Creators: name: ÐÐ»ÑÑÐ½Ð±Ð°ÐµÐ², ÐÑÑÑÑ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸
Ð¼Ð¾ÑÐ½Ð¾ÑÑÑ
ÑÑÐ°Ð½Ð·Ð¸ÑÑÐ¾Ñ
ÐºÐ°ÑÐºÐ°Ð´
Ð»Ð¸Ð½ÐµÐ¹Ð½Ð¾ÑÑÑ
power amplifier
power
transistor
stage
linearity

description: Ð­ÑÐ° ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾-Ð³ÐµÑÐ¼Ð°Ð½Ð¸ÐµÐ²ÑÑ (SiGe) ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸. Ð ÑÑÐ¾Ð¹ ÑÐ°Ð±Ð¾ÑÐµ Ð±ÑÐ»Ð¸ ÑÐ°ÑÑÐ¼Ð¾ÑÑÐµÐ½Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÐµ Ð²Ð¸Ð´Ñ SiGe ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸. Ð ÑÐ°ÑÑÐ½Ð¾ÑÑÐ¸, ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ð¸ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ñ ÑÐ°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð½ÑÐ¼ ÑÑÐ¸Ð»ÐµÐ½Ð¸ÐµÐ¼, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ð¸ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ñ ÑÐ¾ÑÑÐµÐ´Ð¾ÑÐ¾ÑÐµÐ½Ð½ÑÐ¼ ÑÑÐ¸Ð»ÐµÐ½Ð¸ÐµÐ¼. Ð¡ÑÐµÐ´Ð¸ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ñ ÑÐ¾ÑÑÐµÐ´Ð¾ÑÐ¾ÑÐµÐ½Ð½ÑÐ¼ ÑÑÐ¸Ð»ÐµÐ½Ð¸ÐµÐ¼ Ð±ÑÐ»Ð¸ ÑÐ°ÑÑÐ¼Ð¾ÑÑÐµÐ½Ñ Ð¾Ð´Ð½Ð¾ÐºÐ°ÑÐºÐ°Ð´Ð½ÑÐµ Ð¸ Ð¼Ð½Ð¾Ð³Ð¾ÐºÐ°ÑÐºÐ°Ð´Ð½ÑÐµ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ð¸ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸. Ð¡ÑÐµÐ´Ð¸ Ð¼Ð½Ð¾Ð³Ð¾ÐºÐ°ÑÐºÐ°Ð´Ð½ÑÑ Ð¶Ðµ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð±ÑÐ»Ð¸ ÑÐ°ÑÑÐ¼Ð¾ÑÑÐµÐ½Ñ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ð¸ Ñ Ð¿Ð¾ÑÐ»ÐµÐ´Ð¾Ð²Ð°ÑÐµÐ»ÑÐ½ÑÐ¼, Ñ Ð¿Ð°ÑÐ°Ð»Ð»ÐµÐ»ÑÐ½ÑÐ¼ Ð¸ ÐºÐ¾Ð¼Ð±Ð¸Ð½Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¼ ÑÐ¾ÐµÐ´Ð¸Ð½ÐµÐ½Ð¸ÑÐ¼Ð¸. Ð¢Ð°ÐºÐ¶Ðµ Ð±ÑÐ»Ð¸ ÑÐ°ÑÑÐ¼Ð¾ÑÑÐµÐ½Ñ Ð¾ÑÐ´ÐµÐ»ÑÐ½ÑÐµ ÐºÐ°ÑÐºÐ°Ð´Ñ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸. Ð¢Ð°Ðº, Ð±ÑÐ»Ð¾ Ð²ÑÑÐ²Ð»ÐµÐ½Ð¾, ÑÑÐ¾ Ð² Ð¾ÑÐ½Ð¾Ð²Ð½Ð¾Ð¼, Ð² ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾-Ð³ÐµÑÐ¼Ð°Ð½Ð¸ÐµÐ²ÑÑ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÑÑ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð¿ÑÐ¸Ð¼ÐµÐ½ÑÑÑÑÑ ÐºÐ°ÑÐºÐ°Ð´Ñ, Ð¿Ð¾ÑÑÑÐ¾ÐµÐ½Ð½ÑÐµ Ð½Ð° Ð¾Ð´Ð½Ð¾Ð¼ ÑÑÐ°Ð½Ð·Ð¸ÑÑÐ¾ÑÐµ Ñ Ð¾Ð±ÑÐ¸Ð¼ ÑÐ¼Ð¸ÑÑÐµÑÐ¾Ð¼, ÐºÐ°ÑÐºÐ¾Ð´Ð½Ð¾Ð¹ ÑÑÐµÐ¼Ðµ Ð¸ ÑÑÐµÐ¼Ðµ Ñ Ð¿Ð¾Ð²ÑÑÐµÐ½Ð½ÑÐ¼ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸ÐµÐ¼ Ð¿Ð¸ÑÐ°Ð½Ð¸Ñ. ÐÐ¾ ÐºÐ»Ð°ÑÑÐ°Ð¼ Ð¶Ðµ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð±ÑÐ»Ð¾ Ð²ÑÑÐ²Ð»ÐµÐ½Ð¾, ÑÑÐ¾ Ð»Ð¸Ð½ÐµÐ¹Ð½ÑÐµ ÐºÐ»Ð°ÑÑÑ SiGe ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð¿ÑÐ¸Ð¼ÐµÐ½ÑÑÑÑÑ ÑÐ°ÑÐµ, Ð¸Ð¼ÐµÑÑ Ð±Ð¾Ð»ÐµÐµ Ð²ÑÑÐ¾ÐºÑÑ Ð»Ð¸Ð½ÐµÐ¹Ð½Ð¾ÑÑÑ, Ð½Ð¾ Ð½Ðµ ÑÐ°ÐºÐ¾Ð¹ Ð²ÑÑÐ¾ÐºÐ¸Ð¹ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ Ð´Ð¾Ð±Ð°Ð²Ð»ÐµÐ½Ð½Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸, ÐºÐ°Ðº ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ð¸, ÑÐ°Ð±Ð¾ÑÐ°ÑÑÐ¸Ðµ Ð² ÐºÐ»ÑÑÐµÐ²ÑÑ ÐºÐ»Ð°ÑÑÐ°Ñ.
description: This work is devoted to the study of silicon-germanium (SiGe) power amplifiers. In this paper, various types of SiGe power amplifiers were considered. In particular, power amplifiers with distributed gain, as well as power amplifiers with concentrated gain. Single-stage and multi-stage power amplifiers were considered among the amplifiers with concentrated gain. Among the multi-stage power amplifiers, the amplifiers with serial, parallel and combined connections were considered. Separate stages of power amplifiers were also considered. So, it was revealed that basically, in silicon-germanium power amplifiers, cascades are used, built on a single transistor with a common emitter, a cascode circuit and a circuit with an increased supply voltage. As for the classes of power amplifiers, it was found that the linear classes of SiGe power amplifiers are used more often, have a higher linearity, but not such a high added power factor as amplifiers operating in key classes.