VP16-10 Temperature-Dependent Performance of Magnetic Tunnel Junction Sensors with Linear Response Across a Wide Field Range
Creators: Suvechhya Lamichhane
Chun-Yen Chen
Andrei Sokolov
Xiaolu Yin
Yen-Fu Liu
Jhen-Yong Hong
Liang-Juan Chang
and Sy-Hwang Liou
Publisher: name: IEEE
Year: 2025

Magnetic Tunnel Junctions (MTJ) sensors with a linear response over a wide field range are applicable in current sensing in electric vehicles, transmission grid lines and failure testing.[1] This study investigates the wide field sensor and its temperature dependence response of a magnetoresistance (MR), highlighting its performance across a wide temperature and field range. The magnetoresistance and sensor measurements were performed on a magnetic tunnel junction stack consisting of the following layered structure: Si/SiO2 (150 nm) / Ta (1.5 nm) / Ru (25 nm) / Ir20Mn80 (7 nm) / Co30Fe70 (2.2 nm) / Ru (0.85 nm) / Co40Fe40B20 (2.8 nm) / MgO (2 nm) / Co40Fe40B20 (1.3 nm) / Ta (2 nm) / Ru (15 nm).[2] Sensor devices based on this stack were fabricated which demonstrated a change in magnetoresistance, decreasing from 60% at 60 K to 50% at 380 K. Sensor devices based on this stack were fabricated, and sensor measurements revealed a linear response over a wide field range from -800 Oe to 800 Oe at room temperature, and maintained linearity from 77 K within the -900 Oe to 900 Oe range. The coercivity of the layer varied with temperature, from 21.7 Oe at 77 K to 3.8 Oe at 380 K. This consistent linearity and reversibility make the sensor particularly suitable for applications requiring reliable performance across diverse thermal conditions. The sensor's robust sensitivity, along with its linear response over a wide field range, underscores its potential for integration into systems requiring high-precision current sensing. [1,2]References: [1] Y. Rezaeiyan, N.Madsen, T. Böhnert, IEEE Nordic Circuits and Systems Conference (NorCAS) Aalborg, Denmark, pp. 1-4 (2023) [2] S.Lamichhane, Y. Yang, A. Sokolov, Appl. Phys. Lett. 124, 212401 (2024)
Magnetic Tunnel Junctions (MTJ) sensors with a linear response over a wide field range are applicable in current sensing in electric vehicles, transmission grid lines and failure testing.[1] This study investigates the wide field sensor and its temperature dependence response of a magnetoresistance (MR), highlighting its performance across a wide temperature and field range. The magnetoresistance and sensor measurements were performed on a magnetic tunnel junction stack consisting of the following layered structure: Si/SiO2 (150 nm) / Ta (1.5 nm) / Ru (25 nm) / Ir20Mn80 (7 nm) / Co30Fe70 (2.2 nm) / Ru (0.85 nm) / Co40Fe40B20 (2.8 nm) / MgO (2 nm) / Co40Fe40B20 (1.3 nm) / Ta (2 nm) / Ru (15 nm).[2] Sensor devices based on this stack were fabricated which demonstrated a change in magnetoresistance, decreasing from 60% at 60 K to 50% at 380 K. Sensor devices based on this stack were fabricated, and sensor measurements revealed a linear response over a wide field range from -800 Oe to 800 Oe at room temperature, and maintained linearity from 77 K within the -900 Oe to 900 Oe range. The coercivity of the layer varied with temperature, from 21.7 Oe at 77 K to 3.8 Oe at 380 K. This consistent linearity and reversibility make the sensor particularly suitable for applications requiring reliable performance across diverse thermal conditions. The sensor's robust sensitivity, along with its linear response over a wide field range, underscores its potential for integration into systems requiring high-precision current sensing. [1,2]References: [1] Y. Rezaeiyan, N.Madsen, T. Böhnert, IEEE Nordic Circuits and Systems Conference (NorCAS) Aalborg, Denmark, pp. 1-4 (2023) [2] S.Lamichhane, Y. Yang, A. Sokolov, Appl. Phys. Lett. 124, 212401 (2024)