title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÑÐ½ÐºÑÐ¸Ð¾Ð½Ð°Ð»ÑÐ½ÑÑ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐµÐ¹ Ð³Ð°Ð·Ð¾Ð²Ð¾Ð³Ð¾ ÑÐµÐ½ÑÐ¾ÑÐ° ÑÐµÑÐ¾Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° H2S Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÐÐ­ÐÐ¡ ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸Ð¹
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Researching of the functional features of the hydrogen sulfide H2S gas sensor based on MEMS technologies
Creators: name: ÐÑÑÐ´ÑÐºÐ¾Ð², ÐÐ¸ÑÐ°Ð»Ð¸Ð¹
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð³Ð°Ð·Ð¾Ð²ÑÐµ ÑÐµÐ½ÑÐ¾ÑÑ
Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÐºÑÐ¸Ð´Ð½ÑÐ¹
ÑÐµÑÐ¾Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´
ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑ
Ð¼Ð¸ÐºÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð¼ÐµÑ Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ðµ ÑÐ¸ÑÑÐµÐ¼Ñ
gas sensors
metal-oxide
hydrogen sulfide
selectivity
microelectromechanical systems

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÑÐ½ÐºÑÐ¸Ð¾Ð½Ð°Ð»ÑÐ½ÑÑ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐµÐ¹ Ð³Ð°Ð·Ð¾Ð²ÑÑ ÑÐµÐ½ÑÐ¾ÑÐ¾Ð², Ð² ÑÐ°ÑÑÐ½Ð¾ÑÑÐ¸ Ð³Ð°Ð·Ð¾Ð²Ð¾Ð³Ð¾ ÑÐµÐ½ÑÐ¾ÑÐ° ÑÐµÑÐ¾Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð¸ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐµ ÑÐµÐºÐ¾Ð¼ÐµÐ½Ð´Ð°ÑÐ¸Ð¹ Ð¿Ð¾ ÑÑÐ¾Ð²ÐµÑÑÐµÐ½ÑÑÐ²Ð¾Ð²Ð°Ð½Ð¸Ñ ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¸ Ð¿ÑÐ¸Ð±Ð¾ÑÐ°. ÐÐ¸Ð¶Ðµ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½Ñ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ, Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÐµ Ð² ÑÐ¾Ð´Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ. Ð ÑÐ¾Ð´Ðµ Ð²ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ð¸Ñ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð° ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ñ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð³Ð¾ Ð³Ð°Ð·Ð¾Ð²Ð¾Ð³Ð¾ ÑÐµÐ½ÑÐ¾ÑÐ° ÑÐµÑÐ¾Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð°; Ð¿ÑÐ¸Ð²ÐµÐ´ÐµÐ½Ð° ÐºÐ»Ð°ÑÑÐ¸ÑÐ¸ÐºÐ°ÑÐ¸Ñ Ð³Ð°Ð·Ð¾Ð²ÑÑ ÑÐµÐ½ÑÐ¾ÑÐ¾Ð². ÐÐ¿Ð¸ÑÐ°Ð½Ñ Ð¿ÑÐ¸Ð½ÑÐ¸Ð¿Ñ ÑÐ°Ð±Ð¾ÑÑ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÐºÑÐ¸Ð´Ð½ÑÑ Ð¸ Ð´ÑÑÐ³Ð¸Ñ Ð²Ð¸Ð´Ð¾Ð² ÑÐµÐ½ÑÐ¾ÑÐ¾Ð²; ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ñ ÑÑÐ½ÐºÑÐ¸Ð¾Ð½Ð°Ð»ÑÐ½Ð°Ñ Ð¸ ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÑÐµÐ¼Ñ Ð¿ÑÐ¸Ð±Ð¾ÑÐ°; ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½ Ð¸ Ð¸Ð·Ð³Ð¾ÑÐ¾Ð²Ð»ÐµÐ½ Ð§Ð­ Ð³Ð°Ð·Ð¾Ð²Ð¾Ð³Ð¾ ÑÐµÐ½ÑÐ¾ÑÐ° ÑÐµÑÐ¾Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð¿Ð»Ð°Ð½Ð°ÑÐ½Ð¾Ð¹ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¸, Ð¿ÑÑÐµÐ¼ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ ÑÑÐ½ÐºÑÐ¸Ð¾Ð½Ð°Ð»ÑÐ½Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ Ð¾ÐºÑÐ¸Ð´Ð° Ð½Ð¸ÐºÐµÐ»Ñ (II) Ð½Ð° ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾Ð¹ Ð¿Ð»Ð°ÑÑÐ¸Ð½Ðµ. Ð¢Ð°ÐºÐ¶Ðµ Ð¸Ð·Ð³Ð¾ÑÐ¾Ð²Ð»ÐµÐ½Ñ ÐºÐµÑÐ°Ð¼Ð¸ÑÐµÑÐºÐ¸Ðµ Ð¿Ð»Ð°ÑÑ Ð¸ ÑÐ¾Ð·Ð´Ð°Ð½Ñ ÐºÐ¾ÑÐ¿ÑÑÑ Ð´Ð»Ñ Ð³Ð¾ÑÐ¾Ð²ÑÑ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð²; Ð¾Ð¿Ð¸ÑÐ°Ð½ ÑÑÐµÐ½Ð´, Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÐµÐ¼ÑÐ¹ Ð´Ð»Ñ Ð¸ÑÐ¿ÑÑÐ°Ð½Ð¸Ð¹; ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° Ð¼ÐµÑÐ¾Ð´Ð¸ÐºÐ° Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ ÑÑÐµÐ¿ÐµÐ½Ð¸ ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½Ð¾ÑÑÐ¸ ÑÐµÐ½ÑÐ¾ÑÐ° Ðº ÑÐµÑÐ¾Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ñ; Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ Ð§Ð­ ÑÐµÐ½ÑÐ¾ÑÐ°, Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÑÑÑÐµÐ³Ð¾ ÑÐ¾Ð±Ð¾Ð¹ ÑÐ¾Ð½ÐºÐ¸Ð¹ ÑÐ»Ð¾Ð¹ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ° (Ð² Ð´Ð°Ð½Ð½Ð¾Ð¼ ÑÐ»ÑÑÐ°Ðµ â Ð¾ÐºÑÐ¸Ð´Ð° Ð½Ð¸ÐºÐµÐ»Ñ (II)), ÑÐ»ÑÐ¶Ð°ÑÐ¸Ð¹ Ð´Ð»Ñ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ñ ÑÑÐ¾Ð²Ð½Ñ ÑÐµÑÐ¾Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° (H2S) Ð² Ð¸ÑÑÐ»ÐµÐ´ÑÐµÐ¼Ð¾Ð¼ Ð¾Ð±ÑÐµÐ¼Ðµ. Ð¢Ð°ÐºÐ¸Ð¼ Ð¾Ð±ÑÐ°Ð·Ð¾Ð¼, ÑÑÑÐµÑÑÐ²ÑÐµÑ Ð´Ð²Ð° Ð¼ÐµÑÐ¾Ð´Ð° Ð´Ð»Ñ Ð¿Ð¾Ð²ÑÑÐµÐ½Ð¸Ñ ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½Ð¾ÑÑÐ¸ Ð§Ð­. ÐÐ¾-Ð¿ÐµÑÐ²ÑÑ, Ð¼Ð¾Ð¶Ð½Ð¾ Ð¸Ð·Ð¼ÐµÐ½Ð¸ÑÑ ÑÐ¸Ð¿ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ Ð½Ð° Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÑ n-ÑÐ¸Ð¿Ð° (Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¾ÐºÑÐ¸Ð´Ð° ÑÐ¸ÑÐ°Ð½Ð° (IV)). ÐÐ¾-Ð²ÑÐ¾ÑÑÑ, ÑÑÐ¾Ð½ÑÑÐµÐ½Ð¸Ðµ Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ñ Ð§Ð­ Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÐµÑ ÑÐ»ÑÑÑÐ¸ÑÑ ÑÐ½ÐµÑÐ³Ð¾ÑÑÑÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑ Ð¿ÑÐ¸Ð±Ð¾ÑÐ°.
description: This work is associated with the study of the functional features of gas sensors, in particular, the hydrogen sulfide gas sensor and the development in efforts to improve the design of devices. Below are the results obtained during the study. In the course of the work, the design of a semiconductor gas sensor for hydrogen sulfide was developed, the classification of gas sensors was described. Studies of the operation of semiconductor metal oxides and other sensors have been done, functional and structural diagrams of the device were developed, SE of a gas sensor for hydrogen sulfide was developed and manufactured using planar technology by creating a functional layer of nickel oxide (II) on a silicon wafer. Also, ceramic plates were manufactured and defending cases for devices were created, testing appliances are described; a method for determining the degree of sensitivity of the sensor to hydrogen sulfide was developed. Characteristics of the SE sensor are determined. SE is a thin layer of a semiconductor (in this case, nickel (II) oxide) serving to measure the level of hydrogen sulfide (H2S) in the studied volume. To sum up, there are two methods to increase the sensitivity of SE. Firstly, it is possible to change the conductivity type to n-type (using titanium (IV) oxide). Secondly, the thinning of the SE membrane makes it possible to improve the usage of energy by the device.