title: Ð¤Ð¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ Ð¸Ð½ÑÐµÑÑÐµÐ¹ÑÐ° AlGaAs/GaInP2
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Photoluminescence of interface AlGaAs/GaInP2
Creators: name: ÐÑÐ°Ð½Ð°ÑÑÐµÐ², ÐÐ¸ÑÐ¸Ð»Ð»
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¸Ð½ÑÐµÑÑÐµÐ¹Ñ AlGaAs/GaInP2
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ÐÐÐ¡-Ð³Ð¸Ð´ÑÐ¸Ð´Ð½Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ (ÐÐÐ¡ÐÐ­)
ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¾ÑÐºÐ¸ (ÐÐ¢)
ÐºÐ²Ð°Ð½ÑÐ¾Ð²Ð°Ñ ÑÐ¼Ð° (ÐÐ¯)
ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ (Ð¤Ð)
Ð¿ÑÐ¾ÑÐ²ÐµÑÐ¸Ð²Ð°ÑÑÐ°Ñ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð°Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
(ÐÐ­Ð)
Ð²ÑÐ¾ÑÐ¸ÑÐ½Ð°Ñ Ð¸Ð¾Ð½Ð½Ð°Ñ-Ð¼Ð°ÑÑ ÑÐ¿ÐµÐºÑÑÐ¾Ð¼ÐµÑÑÐ¸Ñ (ÐÐÐÐ¡)
AlGaAs/GaInP2 interface
magnetometer
metal-organic
chemical phase epitaxy (MOCVD)
quantum dots (QDs)
quantum well (QW)
photoluminescence (PL)
transmission electron microscopy (TEM)
secondary ion-mass spectrometry (SIMS)

description: Ð Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÐµ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½Ð¾ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÑÑÑÐºÑÑÑÐ½ÑÑ Ð¸ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ AlGaAs/GaInP2 Ñ ÑÐµÐ»ÑÑ Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ð¸ ÑÑÑÑÐºÑÑÑÑ Ð¸Ð½ÑÐµÑÑÐµÐ¹ÑÐ° Ð´Ð»Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ñ Ð² Ð³Ð¸Ð±ÑÐ¸Ð´Ð½ÑÑ ÑÑÑÑÐºÑÑÑÐ°Ñ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¾ÑÐºÐ°Ð¼Ð¸ (ÐÐ¢) GaAs/AlGaAs Ð¸ ÐÐ¢ InP/GaInP2 Ð´Ð»Ñ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ñ Ð²ÑÑÑÐ¾ÐµÐ½Ð½Ð¾Ð³Ð¾ Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ð³Ð¾ Ð¿Ð¾Ð»Ñ InP/GaInP2 ÐÐ¢. ÐÐ½ÑÐµÑÑÐµÐ¹ÑÐ½ÑÐµ ÑÑÑÑÐºÑÑÑÑ Ð²ÑÑÐ°ÑÐ¸Ð²Ð°Ð»Ð¸ÑÑ Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð³Ð°Ð·Ð¾ÑÐ°Ð·Ð½Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸ Ð¸Ð· Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð¾ÑÐ³Ð°Ð½Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐ¾ÐµÐ´Ð¸Ð½ÐµÐ½Ð¸Ð¹ Ð²Ð°ÑÑÐ¸ÑÑÑ ÑÐ¾Ð»ÑÐ¸Ð½Ñ GaInP2, Ð²ÑÐµÐ¼Ñ Ð¾ÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ ÑÐ¾ÑÑÐ°, ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ ÑÐ¾ÑÑÐ° AlGaAs Ð¸ Ð´Ð¾Ð±Ð°Ð²Ð»ÐµÐ½Ð¸Ðµ Ð¿ÑÐ¾Ð¼ÐµÐ¶ÑÑÐ¾ÑÐ½Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ GaAsP. ÐÑÐ¿Ð¾Ð»ÑÐ·ÑÑ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ Ð¿ÑÐ¾ÑÐ²ÐµÑÐ¸Ð²Ð°ÑÑÐµÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸, Ð¿ÑÐ¾Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¾, ÑÑÐ¾ Ð¸Ð½ÑÐµÑÑÐµÐ¹ÑÐ½ÑÐ¹ ÑÐ»Ð¾Ð¹ Ð¸Ð¼ÐµÐµÑ Ð¿ÐµÑÐµÐ¼ÐµÐ½Ð½ÑÑ ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ Ð¾Ñ 2 Ð´Ð¾ 4 Ð½Ð¼ Ð¸ Ð¾Ð±Ð»Ð°ÑÑÐ¸ Ñ Ð±Ð¾Ð»ÑÑÐµÐ¹ ÑÐ¾Ð»ÑÐ¸Ð½Ð¾Ð¹, Ð¸Ð¼ÐµÑÑÐ¸Ðµ Ð»Ð°ÑÐµÑÐ°Ð»ÑÐ½ÑÐ¹ ÑÐ°Ð·Ð¼ÐµÑ ~10 Ð½Ð¼, Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÑÑÑÐ¸Ðµ ÑÐ¾Ð±Ð¾Ð¹ ÐÐ¢ Ð¸Ð·Ð»ÑÑÐ°ÑÑÐ¸Ðµ Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ 700â800 Ð½Ð¼. ÐÑÐ¿Ð¾Ð»ÑÐ·ÑÑ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ (Ð¤Ð) Ð¸ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ñ Ð¼Ð°ÑÑ-ÑÐ¿ÐµÐºÑÑÐ¾Ð¼ÐµÑÑÐ¸Ð¸ Ð²ÑÐ¾ÑÐ¸ÑÐ½ÑÑ Ð¸Ð¾Ð½Ð¾Ð², Ð¿ÑÐ¾Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð° ÐºÐ¾ÑÑÐµÐ»ÑÑÐ¸Ñ Ð¼ÐµÐ¶Ð´Ñ Ð¿Ð¾Ð»Ð¾Ð¶ÐµÐ½Ð¸ÐµÐ¼ ÑÐ¿ÐµÐºÑÑÐ° Ð¤Ð Ð¸Ð½ÑÐµÑÑÐµÐ¹ÑÐ½ÑÑ ÐÐ¢ Ð¸ Ð²Ð°ÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¸ÐµÐ¼ ÑÐ¾ÑÑÐ¾Ð²ÑÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹. ÐÐ° Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÑÐ¸Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ð¹ Ð±ÑÐ»Ð¾ Ð¿ÑÐµÐ´Ð»Ð¾Ð¶ÐµÐ½Ð¾ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¿ÑÐ¾Ð·ÑÐ°ÑÐ½ÑÑ Ð±Ð°ÑÑÐµÑÐ¾Ð² Ð´Ð»Ñ Ð²Ð¾Ð·Ð±ÑÐ¶Ð´Ð°ÑÑÐµÐ³Ð¾ ÑÐ²ÐµÑÐ° (532 Ð½Ð¼) Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÑÑÑÑÐºÑÑÑÑ, Ð² ÐºÐ¾ÑÐ¾ÑÑÑ Ð¤Ð Ð¸Ð½ÑÐµÑÑÐµÐ¹ÑÐ½ÑÑ ÐÐ¢ Ð¿Ð¾Ð´Ð°Ð²Ð»ÐµÐ½Ð°.
description: This paper presents study of structural and optical properties of AlGaAs/GaInP2 heterostructures to optimization interface structure for use in hybrid structure compose of quantum dots (QD) InP/GaInP2 and QD GaAs/AlGaAs intended for measurement of built-magnetic field in QD InP/GaInP2. Interface structure were grown using metal-organic chemical phase epitaxy by using different GaInP2 thickness, growth pause, growth temperature AlGaAs and addition of an intermediate GaAsP. Using transmission electron microscopy spectroscopy, was demonstrated that interface layer are quantum well of varying thickness (2-3 nm) with built-in QDs of different sizes (thickness ~4 nm, lateral size ~10 nm) emitting in wavelength range 700-800 nm. Using photoluminescence (PL) with secondary-ion mass spectrometry was demonstrate correlation between position of PL interface and variation of growing condition. Based on interface research was growth optimization structure of interface with using transparent barriers for light (532 nm) which demonstrate quenching of PL of QD interface.