title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð¾-ÑÐ³Ð»Ð¾Ð²ÑÑ Ñ Ð°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ¾Ð² Ð² Ð´Ð°Ð»ÑÐ½ÐµÐ¼ Ð¿Ð¾Ð»Ðµ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Far field angular spectrum characteristics of emitting semiconductor microlasers research
Creators: name: ÐÑÑÐºÐ¾Ð²Ð°, ÐÐ°ÑÐ¸Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑ
Ð´Ð°Ð»ÑÐ½ÐµÐµ Ð¿Ð¾Ð»Ðµ
Ð´Ð¸Ð°Ð³ÑÐ°Ð¼Ð¼Ð° Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð½Ð¾ÑÑÐ¸
ÐºÐ²Ð°Ð½ÑÐ¾Ð²Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½Ð°Ñ Ð°ÐºÑÐ¸Ð²Ð½Ð°Ñ ÑÑÐµÐ´Ð°
Ð¼icrolaser
far field
emission pattern
quantum active laser media

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÐºÐ°ÑÑÐ¸Ð½ Ð´Ð°Ð»ÑÐ½ÐµÐ³Ð¾ Ð¿Ð¾Ð»Ñ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ¾Ð² Ñ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ¾Ð¼, ÑÐµÐ°Ð»Ð¸Ð·ÑÑÑÐ¸Ð¼ Ð¼Ð¾Ð´Ñ ÑÐµÐ¿ÑÑÑÐµÐ¹ Ð³Ð°Ð»ÐµÑÐµÐ¸. Ð¢Ð°ÐºÐ¸Ðµ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÑ Ð¼Ð¾Ð³ÑÑ Ð±ÑÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ñ Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ Ð±Ð¸Ð¾ÑÐµÐ½ÑÐ¾ÑÐ¾Ð² Ñ Ð²ÑÑÐ¾ÐºÐ¾Ð¹ ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½Ð¾ÑÑÑÑ Ð¸ ÐºÐ¾Ð¼Ð¿Ð°ÐºÑÐ½ÑÑ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ¾Ð² Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ð´Ð»Ñ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð¿ÐµÑÐµÐ´Ð°ÑÐ¸ Ð´Ð°Ð½Ð½ÑÑ Ð¼ÐµÐ¶Ð´Ñ ÑÐ¸Ð¿Ð°Ð¼Ð¸ Ð¸ Ð²Ð½ÑÑÑÐ¸ ÑÐ¸Ð¿Ð°. ÐÑÑÐ»ÐµÐ´ÑÐµÐ¼ÑÐµ ÑÑÑÑÐºÑÑÑÑ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸Ð·ÑÑÑÑÑ ÐºÐ¾Ð¼Ð¿Ð°ÐºÑÐ½ÑÐ¼ ÑÐ°Ð·Ð¼ÐµÑÐ¾Ð¼, Ð¿ÑÐ¾ÑÑÑÐ¼ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð¼ Ð¸Ð·Ð³Ð¾ÑÐ¾Ð²Ð»ÐµÐ½Ð¸Ñ Ð¸ Ð²ÑÑÐ¾ÐºÐ¸Ð¼ Ð·Ð½Ð°ÑÐµÐ½Ð¸ÐµÐ¼ Ð´Ð¾Ð±ÑÐ¾ÑÐ½Ð¾ÑÑÐ¸ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ°. ÐÐ´Ð½Ð°ÐºÐ¾ Ð² Ð¿ÑÐ¾ÑÐµÑÑÐµ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ¾Ð² Ð½Ð° Ð±Ð¾ÐºÐ¾Ð²Ð¾Ð¹ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ° Ð²Ð¾Ð·Ð½Ð¸ÐºÐ°ÑÑ Ð½ÐµÐ¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÐ¸ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ°, ÐºÐ¾ÑÐ¾ÑÑÐµ Ð¼Ð¾Ð³ÑÑ Ð¿Ð¾Ð²Ð»Ð¸ÑÑÑ Ð½Ð° ÐºÐ°ÑÑÐ¸Ð½Ñ Ð´Ð°Ð»ÑÐ½ÐµÐ³Ð¾ Ð¿Ð¾Ð»Ñ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ. Ð ÑÐ°Ð±Ð¾ÑÐµ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½ Ð¿Ð¾Ð¸ÑÐº Ð¸ Ð°Ð½Ð°Ð»Ð¸Ð· Ð¿ÑÐ±Ð»Ð¸ÐºÐ°ÑÐ¸Ð¹ Ð½Ð° ÑÐµÐ¼Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ð¹ Ð´Ð°Ð»ÑÐ½ÐµÐ³Ð¾ Ð¿Ð¾Ð»Ñ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ¾Ð². ÐÐ·Ð¼ÐµÑÐµÐ½Ñ ÑÐ¿ÐµÐºÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð´Ð»Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÐ³Ð»Ð¾Ð²ÑÑ Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ð¹ Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½Ð¾Ð¼ ÑÐ¾ÐºÐµ Ð½Ð°ÐºÐ°ÑÐºÐ¸ Ð¸ Ð¿Ð¾ÑÑÑÐ¾ÐµÐ½Ñ ÐºÐ°ÑÑÐ¸Ð½Ñ Ð´Ð°Ð»ÑÐ½ÐµÐ³Ð¾ Ð¿Ð¾Ð»Ñ. ÐÐ¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ Ð½ÐµÐ¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÐ¸ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¿ÑÐ¸Ð²Ð¾Ð´ÑÑ Ð½ÐµÐ¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÑÐ¼ Ð´Ð¸Ð°Ð³ÑÐ°Ð¼Ð¼Ñ Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð½Ð¾ÑÑÐ¸ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð³Ð¾ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ, Ð½Ð¾ Ð½Ðµ Ð¾ÐºÐ°Ð·ÑÐ²Ð°ÑÑ ÑÑÑÐµÑÑÐ²ÐµÐ½Ð½Ð¾Ð³Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð½Ð° ÑÐ³Ð»Ð¾Ð²Ð¾Ðµ ÑÐ°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ ÑÐ¿Ð¾Ð½ÑÐ°Ð½Ð½Ð¾Ð³Ð¾ Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÐ¸. Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ñ Ð½Ð° Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ðµ Ð½Ð¾Ð²ÑÑ Ð·Ð½Ð°Ð½Ð¸Ð¹ Ð¾ ÑÐ¸Ð·Ð¸ÐºÐµ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ¾Ð² Ð¸ ÑÐ°ÐºÑÐ¾ÑÐ¾Ð², Ð²Ð»Ð¸ÑÑÑÐ¸Ñ Ð½Ð° ÐºÐ°ÑÑÐ¸Ð½Ñ Ð´Ð°Ð»ÑÐ½ÐµÐ³Ð¾ Ð¿Ð¾Ð»Ñ.
description: The given work is devoted to studying far field of semiconductor microlasers with whispering gallery modes resonator. Such lasers can be implemented in highresponsive biosensors or compact emission sources for optical transmission microchips. Investigated structures are known for small sizes, easy manufacturing and high Q-factor. However, the problem of heterogeneous semiconductor etching arises when a microlaser is being made. It is a probable cause of far-field image distortion. In the work, the analysis of other studies and publications devoted to the topic is provided. Electroluminescence spectrums for different angular directions are measured for different pump currents and far-field images are taken. Uneven etching is shown to result in heterogeneous lasing emission picture; however, there is no significant change in spontaneous emission. The results of the given research are devoted to obtaining new knowledge of microlasers physics and different factors responsible for far-field emission picture.