cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
High-Rate Deposition of Si Absorber Layers by Electron Beam Evaporation and First Electron Beam Crystallization Tests
Creators: name: Saager, S.
name: Ben Yaala, M.B.
name: Heinß, J.-P.
name: Metzner, C.
name: Pfefferling, B.
name: Temmler, D.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
Silicon-based Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1900-1903
description: In earlier electron beam physical vapor deposition tests (EB-PVD), using a conventional copper crucible (A), high Si deposition rates at relatively high EB power together with a contamination level of 1016 cm-3 are demonstrated. To improve the rate vs. EB power relation as well as the Si layer purity, two alternative high rate EB-PVD methods are investigated and reported here - a contact-less crucible setup (B) and a crucible-free setup (C). In these experiments comparable deposition rates of ~ 70 nm/s are demonstrated for (B) and (C) too, but at an improved rate vs. EB power relation. Critical factors of the methods (B) and (C) are the risk of melt contact to the crucible bottom by soaking through the Si nugget bed for (B) and the heat up process to evaporation conditions for (C) together with the control of the melt area on the top surface of the high-purity single crystal rod, which was used as evaporation source. To demonstrate the overall quality of 7 μm amorphous Si films, deposited by the crucible-free EB-PVD onto a (100) Si substrate, they were crystallized by an area scanning EB process, resulting in a single crystal Si film area with orientation, identically to the substrate.
Effect of Magnesium Content on the Properties of Transparent Conductive RF-Sputtered Gallium-Doped Magnesium Zinc Oxide Thin Films and CIGS Solar Cells
Creators: name: Lu, H.-C.
name: Hsiao, Y.-P.
name: Jou, J.-C.
name: Chang, C.-S.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1819-1822
description: Transparent conducting gallium-doped magnesium zinc oxide (GMZO) thin films with good near infrared transmittance were deposited on glass substrates by radio frequency (RF) magnetron sputtering using GMZO ceramic targets with different Mg contents. The effect of Mg content on the structural, electrical, and optical properties of these RF-sputtered GMZO thin films as well as the performance of the Cu(In, Ga)Se2 (CIGS) thin film solar cells was investigated. GMZO thin films having a hexagonal ZnO wurtzite structure, a strong (002) preferred orientation, a lowest resistivity of 3.5 x 10-4 Ωcm and an average optical transmittance over 87% were obtained when GMZO targets containing 2 at% Mg were used in the sputtering deposition. It was also found that the resistivity of the GMZO thin films increased when the Mg content increased from 2 at% to 6 at%. Finally, the photovoltaic conversion efficiency of the CIGS thin film solar cells with GMZO transparent electrodes was shown to be higher than that of the CIGS thin film solar cells with traditional aluminum-doped zinc oxide transparent electrodes due to their higher near infrared transmittance.
Running vacuum in the Universe and the time variation of the fundamental constants of Nature
Creators: name: Fritzsch, Harald
name: Sola, Joan
name: Nunes, Rafael C.
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: General Relativity and Quantum Cosmology (gr-qc)
subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: We compute the time variation of the fundamental constants (such as the ratio of the proton mass to the electron mass, the strong coupling constant, the fine structure constant and Newton's constant) within the context of the so-called running vacuum models (RVM's) of the cosmic evolution. Recently, compelling evidence has been provided showing that these models are able to fit the main cosmological data (SNIa+BAO+H(z)+LSS+BBN+CMB) significantly better than the concordance $Λ$CDM model. Specifically, the vacuum parameters of the RVM (i.e. those responsible for the dynamics of the vacuum energy) prove to be nonzero at a confidence level $\gtrsim3σ$. Here we use such remarkable status of the RVM's to make definite predictions on the cosmic time variation of the fundamental constants. It turns out that the predicted variations are close to the present observational limits. Furthermore, we find that the time variation of the dark matter particles should be crucially involved in the total mass variation of our Universe. A positive measurement of this kind of effects could be interpreted as strong support to the "micro and macro connection" (viz. the dynamical feedback between the evolution of the cosmological parameters and the time variation of the fundamental constants of the microscopic world), previously proposed by two of us (HF and JS).
description: Matches the published version in EPJC
Thickness and Ga-Content Variations in Co-Evaporated CIGS Solar Solar Cells with Flat Ga Profile - an Electrical Characterization
Creators: name: Ledinek, D.
name: Vermang, B.
name: Edoff, M.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1832-1836
description: In this work an extensive experimental series has been carried out by co-evaporating CIGS layers with
varying thickness (0.5, 1.0, 1.5 μm) and varying Ga content (Ga/(Ga+In)=0.15, 0.30, 0.45 and 0.60). In all CIGS layers
the Cu concentration has been held constant at Cu/(In+Ga)=0.85. The cells have been characterized with dark and light
current voltage measurements, external quantum efficiency measurements and apparent quantum efficiency
measurements at negative bias. In agreement with the literature, we observe a distinctively shorter collection length for
high Ga concentrations and voltage dependent photo current collection for all cells. Voltage dependent current collection
however cannot alone explain our data and the cells need to be described with an illumination dependent diode current or
photo current. The generation dependent diode or photo current increase the slope of the light JV curve at negative bias
voltage for all solar cells and dominates the slope in cells with 0.5 μm thin absorbers regardless of Ga content. We
propose that this behavior is connected to the recombination at the back contact, as it is smaller in the cells with thick
absorber layers and since we do not observe the same behavior in back side passivated cells.
Al-Doped ZnO by Inline MOCVD
Creators: name: Brooks, W.S.M.
name: Barrioz, V.
name: Siderfin, P.
name: Lamb, D.A.
name: Kartopu, G.
name: Monir, S.
name: Clayton, A.J.
name: Irvine, S.J.C.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1773-1777
description: Aluminium doped zinc oxide; a promising low toxicity and earth abundant transparent conductor has been produced using a novel chamberless inline metal organic chemical vapour deposition system. The growth regime was optimized via the investigation of organometallic precursor concentration and substrate surface temperature variables. A Zn:O precursor ratio of 0.27 was found to yield an approximately equal Zn:O ratio in the thin film, where a surface temperature of 400°C was found to provide optimum optoelectronic properties. An AZO film thickness of 632 nm was found to yield sheet resistance values < 10 Ω/ and carrier concentrations > 7 x 1020 cm-3. Four point probe mapping over a 150 x 130 mm area found a sheet resistance of 11.5 Ω/ with a 1 deviation of 3.5 Ω/. Incorporation of an AZO layer in a CdZnS/CdTe PV device was compared to a commercially available and sourced TCO; NSG TEC C10, via the measurement of I-V and EQE characteristics. It is proposed that the addition of a high resistance transparent (HRT) ZnO layer would likely recover the comparatively reduced EQE response and lower FF observed in the AZO based device.
Relapse in class II orthognathic surgery - a systematic review
Creators: name: Eckmüller, Stephanie
name: Paddenberg, Eva
name: Hiller, Karl-Anton
name: Proff, Peter
name: Knüttel, Helge
name: Kirschneck, Christian
Publisher: name: Universität Regensburg
Year: 2022
Subjects: subject: Orthognathic surgery, Stability, Class II, Systematic review
subject: 610 Medizin

description: Objectives Relapse after orthognathic surgery seems to depend on diverse factors. Proffit et al. postulated in 2007 a “hierarchy of stability” (Head Face Med 6:66, 2007), ranking posttreatment stability after various orthognathic procedures, but no systematically reviewed evidence was provided. Therefore, the aim of this review was to investigate the extent of class II relapse in orthognathic surgery of Angle class II patients depending on the surgical procedure used. Materials and methods Seven databases were searched for randomized and controlled clinical trials to compare relapse in surgical procedures for Angle class II patients. After duplicate study selection, data extraction and risk of bias assessment were performed with the ROBINS-I tool as well as data synthesis by frequency distribution, followed by assessment of the quality of evidence with GRADE. Results Four non-randomized cohort-studies with a total of 132 patients were included. Bimaxillary procedures as well mandibular advancement procedures proved to be highly stable. Single jaw interventions at the maxilla achieved mostly stable results at sagittal dimension and problematic stability in the vertical dimension. However, there were only limited data available with low quality of evidence. Conclusions Limited existing evidence of low quality partly support the postulated hierarchy of stability of Proffit et al. (Head Face Med 6:66, 2007) and indicates that a surgical correction of class II dysgnathia with bimaxillary procedures and mandibular advancement seems to be highly stable. However, additional studies are needed to address the relation between relapse and surgical orthognathic intervention.
Cu2ZnSnS4 Thin Film Solar Cells Produced by Thiourea Complexes Suspension
Creators: name: Tombolato, S.
name: Colombo, A.
name: Acciarri, M.
name: Boshta, M.
name: Binetti, S.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1829-1831
description: Cu2ZnSnS4 (CZTS) thin films are grown by a two step process aimed for low toxicity requirements and relatively low
temperature annealing in S2 atmosphere. The chemical process developed is based on the metal complexation plus
the thermolysis of thiourea to form a highly condensed precursor film. The reagents used are copper acetate, zinc
acetate and thiourea dissolved in methanol. Ethylene glycol and polyvinyl alcohol are employed as additives to
improve filmation. The suspension obtained is deposited by drop-casting on soda-lime glasses with a layer of
sputtered molybdenum and annealed at 450 °C in sulfur vapors obtaining a good quality microcrystalline CZTS
phases. Preliminary solar cells fabricated using a CdS buffer layer show an efficiency of about 1% .
Influence of the Annealing Process on Transport and Photoelectrical Properties of Cu2ZnSnS4 Kesterite Thin Films Obtained by Spray Pyrolysis
Creators: name: Dermenji, L.
name: Guc, M.
name: Bruc, L.I.
name: Dittrich, Th.
name: Rusu, M.
name: Lisunov, K.G.
name: Curmei, N.
name: Sherban, D.A.
name: Simashkevich, A.V.
name: Lux-Steiner, M.Ch.
name: Arushanov, E.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1801-1804
description: Cu2ZnSnS4 thin films were grown by the spray pyrolysis method and annealed in an evacuated
ampoule in presence of elemental sulfur. Annealing led to a significant decrease of the conductivity (by more than
three orders of magnitude at room temperature). Transport properties are governed by the Mott variable-range
hopping conduction mechanism in the as-deposited film and by the inter-grain conduction in the annealed film.
Photoconductivity data, including the persistent photoconductivity and the modulated surface photovoltage, are
almost independent of the annealing process, implying a high concentration of defects in both samples. The increase
of the signal intensity in photoconductivity measurements is attributed to surface conditioning effects caused by
annealing.
Benefits of Double Bandgap Grading for Highly Efficient Cu(In,Ga)(Se,S)2 Thin Film Solar Cells
Creators: name: Lavrenko, T.
name: Ott, T.
name: Walter, T.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1781-1785
description: Unique material properties of CIGS solar cells brought this technology to the lead, demonstrating the
highest efficiencies compared to other thin film counterparts. [1] Double bandgap grading due to sulphur
incorporation into the surface of Cu(In,Ga)(Se,S)2 absorbers and a high Ga content at the back contact can be also
viewed as an important contributor with respect to such high performance. This paper is focused on the impact of a
sulphurization step on the bandgap in the space charge region and its ability to separate the absorption and
recombination processes maintaining both high open circuit voltages and short circuit currents at the same time.
Moreover, an accumulation of Ga at the absorber / back contact interface is discussed with regard to a back contact
passivation and suppression of the phototransistor effects often observed at low temperatures. In order to explain and
verify this model SCAPS simulations will be presented and compared to the experimental results. Furthermore, it will
be shown that gallium due to high temperature deposition processes diffuses from the back contact towards the
principal pn-junction resulting in a more homogeneous distribution within the absorber layer and modifying both
optical and electrical properties of solar cells.
ESCAPE D5.2: Detailed Project Plan
Creators: name: Meyer-Zhao, Zheng
name: Grange, Yan
name: van Haarlem, Michiel
name: Szomoru, Arpad
name: Voutsinas, Stelios
name: Taffoni, Giuliano
name: Sánchez Expósito, Susana
name: Chanial, Pierre
name: Dickinson, Hugh
name: Füßling, Matthias
Publisher: name: Zenodo
Year: 2019

description: This document describes the project plan for ESCAPE Work Package 5, ESAP - ESFRI Science Analysis Platform, detailing its goals, objectives and structure. It will serve as the work plan at the beginning of the project and will be updated throughout the project. The ESAP main objectives are to define and implement a flexible science platform for the analysis of open access data available through the EOSC environment that will allow EOSC researchers to identify and stage existing data collections for analysis, tap into a wide-range of software tools and packages developed by the ESFRIs, bring their own custom workflows to the platform, and take advantage of the underlying HPC and HTC computing infrastructure to execute those workflows.
Preparation of CZTS Thin Films by Wet Techniques: SILAR and Electrodeposition
Creators: name: Kirou, H.
name: Atourki, L.
name: Elfanaoui, A.
name: Bouabid, K.
name: Ihlal, A.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1746-1748
description: Due to their promising potential to reach cost effective PV-generated electricity, thin film based solar cells are continuing to gain more and more popularity. Recently, CIGS based solar cells have achieved new record efficiency of 20.8% overtaking multi-crystalline silicon technology that was leading the thin film solar cells for many years. However, toxicity of certain elements and scarcity of other elements such as Indium is expected to limit the potential yield of CIGS based PV to less than 100 Gigawatts per year and thus cannot meet the Terawatt level of renewable electricity needed to ensure a sustainable development worldwide. Thus, searching alternative earth-abundant metallic elements is a challenge for the scientific community. Zinc and Tin are nowadays tested as an alternative for Indium. CZTS based solar cells, since the announcement of IBM a breaking record efficiency of 11.1%, are being near the level needed for commercial solar panels. In this study, we present our recent results concerning the preparation CZTS thin films using simple and cost effective growth techniques: SILAR and electrodeposition. Influence of deposition parameters on the optical and structural properties of our films are presented and discussed. It was found that the morphology and the crystalline properties of the films depend strongly on the conditions of preparation. X-ray diffraction allowed us to confirm the presence of the well known kesterite structure in addition to other secondary phases.
Quantum Memristors with Superconducting Circuits
Creators: name: Salmilehto, J.
name: Deppe, F.
name: Di Ventra, M.
name: Sanz, M.
name: Solano, E.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.
ESCAPE D5.3: Performance Assessment of Initial Science Platform Prototype
Creators: name: Swinbank, John D.
name: Bird, Ian
name: Dickinson, Hugh
name: Garrido, Rafael
name: Hughes, Gareth
name: Ramón Rodón, José
name: Sánchez Expósito, Susana
name: Taffoni, Giuliano
name: Verdes‐Montenegro, Lourdes
name: Verkouter, Harro
name: Vermaas, Nico
name: Voutsinas, Stelios
Publisher: name: Zenodo
Year: 2021

description: This document reports on the current status of ESAP, the ESFRI Science Analysis Platform. ESAP is a key part of the interface between the services delivered by the ESCAPE project and the scientific community: it will provide a unified mechanism by which users can discover and interact with the data products, software tools, workflows, and services that are made available through ESCAPE, and it is designed to be extensible and flex‐ ible to adapt to the emergent requirements of future projects. The development of ESAP is the fundamental activity of ESCAPE Work Package 5. ESAP, in and of itself, does not provide any compute or analysis capabilities. Rather, it acts as a broker between users and the various services which are available to them. For example, ESAP will help users identify datasets which are of interest to them (perhaps by interrogating the ESCAPE “data lake”, or an ESFRI‐specific archive), to locate software and workflows which can help them analyze that data, and connect them to services which can execute analyses codes on their behalf (perhaps interactively, such as in a Jupyter notebook, or by scheduling jobs on a batch processing system). ESAP abstracts the details of the various heterogeneous underlying systems from the user, so that they can use a unified, coherent interface to access all of the various services they need. It does this by adopting a modular, flexible architecture. The user will connect to a service‐independent web‐based user interface, which in turn communicates with the API Gateway. By adopting a set of standard programming interfaces and conventions, the Gateway can easily be extended to address whatever current or future capabilities are exposed through the EOSC. We have assessed the performance of ESAP by comparing both its current, prototype, implementation, and the ultimate design vision, against community needs and expectations. These needs and expectations were derived in three ways: from the initial requirements developed in the early stages of the ESCAPE project; from the use cases that ESCAPE ESFRIs have been developing over the course of the project to date; by hosting a workshop, at which ESAP was presented to the community and their feedback was collected. Based on this evaluation, we conclude that ESAP is making good progress towards an ultimate vision that is well aligned with the needs of the scientific community. No major changes to the ESAP plans are expected as a result of this analysis, but the feedback received will play an important role in improving and refining plans for further development of ESAP over the remaining project duration. This document is submitted as ESCAPE project deliverable D5.3, Performance Assessment of Initial Science Platform Prototype.
Product mixing in the alternating group
Creators: name: Eberhard, Sean
Publisher: name: arXiv
Year: 2015
Subjects: subject: Group Theory (math.GR)
subject: Combinatorics (math.CO)
subject: FOS: Mathematics

description: We prove the following one-sided product-mixing theorem for the alternating group: Given subsets $X,Y,Z \subset A_n$ of densities $α,β,γ$ satisfying $\min(αβ,αγ,βγ)\gg n^{-1}(\log n)^7$, there are at least $ (1+o(1))αβγ|A_n|^2$ solutions to $xy=z$ with $x\in X, y\in Y, z\in Z$. One consequence is that the largest product-free subset of $A_n$ has density at most $n^{-1/2}(\log n)^{7/2}$, which is best possible up to logarithms and improves the best previous bound of $n^{-1/3}$ due to Gowers. The main tools are a Fourier-analytic reduction noted by Ellis and Green to a problem just about the standard representation, a Brascamp--Lieb-type inequality for the symmetric group due to Carlen, Lieb, and Loss, and a concentration of measure result for rearrangements of inner products.
description: 19 pages. Reformatted for Discrete Analysis but otherwise identical to the previous version
Improving the Cu2SnS3 PV Cell Efficiency via Post Treatment of Co-Evaporated Thin Films
Creators: name: Kanai, A.
name: Aihara, N.
name: Toyonaga, K.
name: Araki, H.
name: Takeuchi, A.
name: Katagiri, H.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1805-1808
description: Ternary compound Cu2SnS3 (CTS) thin films were grown by thermal evaporation in a vacuum system using evaporation sources for Cu, Sn, and S to suppress the formation of voids and to produce a thin dense film. Following deposition, the films were annealed at 570 °C for 5 min, with and without sulfur. The photovoltaic cell fabricated with the as-deposited CTS thin film showed no photovoltaic properties. However, the photovoltaic cells fabricated with CTS thin films annealed with and without sulfur had demonstrated conversion efficiencies of over 3 %. The photovoltaic cell fabricated with the CTS thin film annealed with sulfur at 570 °C had the best performance among the cells examined. Specifically, an open-circuit voltage of 262 mV, a short-circuit current density of 32.2 mA/cm2, a fill factor of 0.443, and a conversion efficiency of 3.73 % were obtained. This improvement in efficiency is thought to be due to an increase in grain size and the suppression of defects resulting from the heat treatment.
Device Structures for High-Efficiency Chalcopyrite Tandem Solar Cells
Creators: name: Shibasaki, S.
name: Hiraga, H.
name: Saito, H.
name: Nakagawa, N.
name: Yamazaki, M.
name: Yamamoto, K.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1722-1724
description: In order to obtain more efficient chalcopyrite solar cells, we have considered an adequate tandem
structure. We have calculated bandgap dependence of the cell efficiency of top cells and bottom cells with series and
parallel connection. Our calculations have revealed that parallel connection is superior to series connection. With
some assumptions concerning absorption, we calculate maximum efficiencies of the tandem cells to be in the range of
22 to 24% with the 20%-efficiency CIGS as bottom cells. To increase efficiency of the tandem cells, in addition to
increasing conversion efficiency of CIGS bottom cells, we should focus on wide-bandgap chalcopyrite top cells.
Kerr-Schild--Kundt Metrics are Universal
Creators: name: Gurses, Metin
name: Sisman, Tahsin Cagri
name: Tekin, Bayram
Publisher: name: arXiv
Year: 2016
Subjects: subject: General Relativity and Quantum Cosmology (gr-qc)
subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: We define (non-Einsteinian) universal metrics as the metrics that solve the source-free covariant field equations of generic gravity theories. Here, extending the rather scarce family of universal metrics known in the literature, we show that the Kerr-Schild--Kundt class of metrics are universal. Besides being interesting on their own, these metrics can provide consistent backgrounds for quantum field theory at extremely high energies.
description: 31 pages, To appear in the Journal of Classical and Quantum Gravity
Time Delay in Molecular Photoionization
Creators: name: Hockett, P.
name: Frumker, E.
name: Villeneuve, D. M.
name: Corkum, P. B.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Atomic Physics (physics.atom-ph)
subject: Chemical Physics (physics.chem-ph)
subject: FOS: Physical sciences

description: Time-delays in the photoionization of molecules are investigated. As compared to atomic ionization, the time-delays expected from molecular ionization present a much richer phenomenon, with a strong spatial dependence due to the anisotropic nature of the molecular scattering potential. We investigate this from a scattering theory perspective, and make use of molecular photoionization calculations to examine this effect in representative homonuclear and hetronuclear diatomic molecules, nitrogen and carbon monoxide. We present energy and angle-resolved maps of the Wigner delay time for single-photon valence ionization, and discuss the possibilities for experimental measurements.
description: Feb 2017 (v3) - fixed some broken citations
Sheet Resistance Measurements of Highly Resistive Interfacial Layers in Photovoltaic TCO Thin Films
Creators: name: Tänzer, T.
name: Naumann, V.
name: Großer, S.
name: Hagendorf, C.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1759-1762
description: Transparent conductive oxide (TCO) layers for modern thin-film photovoltaic modules consist of several
layers with different electric resistivity. In particular, SnO2-based TCOs exhibit a low resistive, consisting of an F-doped
base layer (FTO) and a highly resistive interfacial layer. These interfacial layers are subject to process-induced
degradation, which limits the performance of the thin film solar cell by modification of the specific resistance of the
highly resistive interfacial layer between absorber material and FTO. This paper presents a method to measure the
resistivity of the highly resistive interfacial layer by a modified transfer-length measurement (TLM).
Comparison Study of CZTS Thin Films Grown Using Vacuum and Solution Based Methods
Creators: name: Gordillo, G.
name: Hurtado-Morales, M.F.
name: Becerra, R.A.
name: Cruz, S.D.
name: Ramírez Pérez, E.
name: Oyola Villegas, J.S.
name: Lauermann, I.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1704-1708
description: Results regarding structural properties, chemical composition and oxidation states of
Cu2ZnSnS4 (CZTS) thin films prepared by co-evaporation are compared with those obtained with CZTS
films grown in solution by sequential deposition of Cu2SnS3 (CTS) and ZnS thin films, where the CTS
compound is prepared in one step process which involves simultaneous precipitation of Cu2S and SnS2
performed by diffusion membranes assisted CBD technique and ZnS by conventional CBD technique. X-ray
diffraction analysis (XRD) which is mostly used for the phase identification can not clearly distinguish the
formation of secondary phases such as Cu2SnS3, since both compounds have similar diffraction pattern;
therefore Raman scattering analysis was used to distinguish these phases. Further, the chemical elemental
composition and oxidation states of both type of CZTS films were studied by X-ray photoelectron
spectroscopy (XPS) analysis.
The Virasoro vertex algebra and factorization algebras on Riemann surfaces
Creators: name: Williams, Brian R
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Algebra (math.QA)
subject: Mathematical Physics (math-ph)
subject: FOS: Mathematics
subject: FOS: Physical sciences

description: This paper focuses on the connection of holomorphic two-dimensional factorization algebras and vertex algebras which has been made precise in the forthcoming book of Costello-Gwilliam. We provide a construction of the Virasoro vertex algebra starting from a local Lie algebra on the complex plane. Moreover, we discuss an extension of this factorization algebra to a factorization algebra on the category of Riemann surfaces. The factorization homology of this factorization algebra is computed as are the correlation functions. We provide an example of how the Virasoro factorization algebra implements conformal symmetry of the beta-gamma system using the method of effective BV quantization.
On the Deuterium-to-Hydrogen Ratio of the Interstellar Medium
Creators: name: Weinberg, David H.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: FOS: Physical sciences

description: Observations show that the global deuterium-to-hydrogen ratio (D/H) in the local interstellar medium (ISM) is about 90% of the primordial ratio predicted by big bang nucleosynthesis. The high (D/H)$_{ISM}$ implies that only a small fraction of interstellar gas has been processed through stars, which destroy any deuterium they are born with. Using analytic arguments for one-zone chemical evolution models that include accretion and outflow, I show that the deuterium abundance is tightly coupled to the abundance of core collapse supernova (CCSN) elements such as oxygen. These models predict that the ratio of (D/H)$_{ISM}$ to the primordial abundance is $\approx 1/(1+r Z_O/m_O)$, where r is the recycling fraction, $Z_O$ is the ISM oxygen mass fraction, and $m_O$ is the population averaged CCSN yield of oxygen. Using values $r=0.4$ and $m_O=0.015$ appropriate to a Kroupa (2001) initial mass function and recent CCSN yield calculations, solar oxygen abundance corresponds to an ISM (D/H) that is 87\% of the primordial value, consistent with observations. This approximation is accurate for a wide range of parameter values, and physical arguments suggest that it should remain accurate for more complex chemical evolution models, making the deuterium abundance a robust prediction of almost any model that reproduces the observed ISM metallicity. The good agreement with the upper range of observed (D/H)$_{ISM}$ values supports the long-standing suggestion that sightline-to-sightline variations of deuterium are a consequence of dust depletion, rather than a low global (D/H)$_{ISM}$ enhanced by localized accretion of primordial composition gas. This agreement limits deviations from conventional yield and recycling values, and it implies that Galactic outflows eject ISM hydrogen as efficiently as they eject CCSN metals.
description: 8 pp., matches version published in ApJ. New tests demonstrate greater generality of results. More emphasis on implications for oxygen yields, direct stellar collapse to black holes, and metal-enriched outflows
Recognizing Simple-Triangle Graphs by Restricted 2-Chain Subgraph Cover
Creators: name: Takaoka, Asahi
Publisher: name: arXiv
Year: 2016
Subjects: subject: Discrete Mathematics (cs.DM)
subject: FOS: Computer and information sciences

description: A simple-triangle graph (also known as a PI graph) is the intersection graph of a family of triangles defined by a point on a horizontal line and an interval on another horizontal line. The recognition problem for simple-triangle graphs was a longstanding open problem, and recently a polynomial-time algorithm has been given [G. B. Mertzios, The Recognition of Simple-Triangle Graphs and of Linear-Interval Orders is Polynomial, SIAM J. Discrete Math., 29(3):1150--1185, 2015]. Along with the approach of this paper, we show a simpler recognition algorithm for simple-triangle graphs. To do this, we provide a polynomial-time algorithm to solve the following problem: Given a bipartite graph $G$ and a set $F$ of edges of $G$, find a 2-chain subgraph cover of $G$ such that one of two chain subgraphs has no edges in $F$.
description: 13 pages, 14 figures, the Author's accepted version of a paper in WALCOM 2017, Keywords: Chain cover, Graph sandwich problem, PI graphs, Simple-triangle graphs, Threshold dimension 2 graphs
Reduction of gravity-matter and dS gravity to hypersurface
Creators: name: Park, I. Y.
Publisher: name: arXiv
Year: 2015
Subjects: subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: The quantization scheme based on reduction of the physical states \cite{Park:2014tia} is extended to two gravity-matter systems and pure dS gravity. For the gravity-matter systems we focus on quantization in a flat background for simplicity, and renormalizability is established through gauge-fixing of matter degrees of freedom. Quantization of pure dS gravity has several new novel features. It is noted that the infrared divergence does not arise in the present scheme of quantization. The lapse function constraint plays a crucial role.
description: 39 pages, 1 figure, refs and clarifications added, version to appear in IJGMMP
On the Importance of the Back Contact for Cu (In, Ga) Se2 Thin Film Solar Cells
Creators: name: Ott, T.
name: Lavrenko, T.
name: Walter, T.
name: Schäffler, R.
name: Fecht, H.-J.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1725-1729
description: This contribution discusses the importance of the back contact of Cu (In, Ga) Se2 thin film solar cells with respect to the device performance and to the device stability. Usually Mo is applied as a back contact material whereas the direct contact to Cu (In, Ga) Se2 is formed by a MoSex interfacial layer. Ideally, an ohmic contact is required, however, a moderate barrier at the back contact only affects the device performance at low temperatures. Nevertheless, the development of devices with a diffusion length in the order of the film thickness and solar cells with a thin absorber layer can enhance the impact of the back contact on the device performance. We shall show and discuss that such a Schottky barrier at the back contact can be interpreted in terms of a phototransistor model. At low temperatures such a barrier can limit the achievable open circuit voltage (Voc). It will be demonstrated that the barrier height at the back contact can be extracted from temperature dependent Voc measurements. Furthermore, it will be concluded that accelerated ageing can lead to an increase of this back barrier. The proposed phototransistor model will be supported by simulations and temperature dependent device measurements.
Directly Observing the Galaxies Likely Responsible for Reionization
Creators: name: Livermore, R. C.
name: Finkelstein, S. L.
name: Lotz, J. M.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: FOS: Physical sciences

description: We report a new analysis of the Hubble Frontier Fields clusters Abell 2744 and MACS 0416 using wavelet decomposition to remove the cluster light, enabling the detection of highly magnified (>50x) galaxies a factor of 10x fainter in luminosity than previous studies. We find 167 galaxies at z > 6, and with this sample we are able to characterize the UV luminosity function to M_UV = -12.5 at z ~ 6, -14 at z ~ 7 and -15 at z ~ 8. We find a steep faint-end slope (alpha 6, consistent with the number of faint galaxies needed to reionize the Universe under standard assumptions.
description: 28 pages, 13 figures, published in ApJ
Transference of Bilinear Restriction Estimates to Quadratic Variation Norms and the Dirac-Klein-Gordon System
Creators: name: Candy, Timothy
name: Herr, Sebastian
Publisher: name: arXiv
Year: 2016
Subjects: subject: Analysis of PDEs (math.AP)
subject: Classical Analysis and ODEs (math.CA)
subject: FOS: Mathematics

description: Firstly, bilinear Fourier Restriction estimates --which are well-known for free waves-- are extended to adapted spaces of functions of bounded quadratic variation, under quantitative assumptions on the phase functions. This has applications to nonlinear dispersive equations, in particular in the presence of resonances. Secondly, critical global well-posedness and scattering results for massive Dirac-Klein-Gordon systems in dimension three are obtained, in resonant as well as in non-resonant regimes. The results apply to small initial data in scale-invariant Sobolev spaces exhibiting a small amount of angular regularity.
description: v2: minor typos fixed, few references added, case 2M=m included; v3: minor edits, v4: assumptions rephrased, minor corrections/additions
CDS/CDTE Solar Cells with a V2O5/AU Back Contact
Creators: name: Shen, K.
name: Yang, R.
name: Wang, D.
name: Wang, D.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1697-1700
description: V2O5 thin film was employed as a buffer layer in the back contact of CdTe solar cells. A comparative
study was carried out for the cells with different back contact structures: Au only, V2O5/Au and Cu/Au bi-metal back
contact. The solar cells with V2O5/Au and Cu/Au back contacts had much lower Schottky barrier compared to the cell
with Au-only back contact. The work function of V2O5 buffer was quantitatively characterized by Kelvin probe force
microscope. It was found that the insertion of a V2O5 buffer layer between CdTe and Au metal reduced the Fermi
energy mismatch from 0.6 eV to 0.3 eV, which led to reduced Schottky barrier and improved open-circuit voltage and
fill factor
Efficient Light Harvesting of pin-Type a-Si:H Solar Cells by Implementing an n-a-SiOx:H/LiF Interlayer
Creators: name: Yang, J.-H.
name: Myong, S.Y.
name: Lee, H.-S.
name: Lim, K.S.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
Silicon-based Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1657-1659
description: We have developed an hydrogenated n-type amorphous silicon oxide (n-a-SiOx:H)/lithium fluoride (LiF) interlayer for effective light trapping in pin-type hydrogenated amorphous silicon (a-Si:H)-based solar cells with a 200-nm-thick intrinsic a-Si:H absorber. The spectral response of the fabricated solar cell is clearly enhanced in the wide wavelength range of 500-800 nm because of the reduced plasmonic absorption and effective refractive index grading. As a result, the short-circuit current is improved by 10.7% (from 13.1 to 14.5 mA/cm2). Consequently, we have achieved the highest conversion efficiency of 9.0%, which confirms the possibility of cost-effective thin a-Si:H-based solar cells.
On-chip interference of single photons from an embedded quantum dot and an external laser
Creators: name: Prtljaga, Nikola
name: Bentham, Christopher
name: O'Hara, John
name: Royall, Ben
name: Clarke, Edmund
name: Wilson, Luke R
name: Skolnick, Maurice S
name: Fox, A Mark
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Optics (physics.optics)
subject: FOS: Physical sciences

description: In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum interference between dissimilar sources. We verify the occurrence of on-chip Hong-Ou-Mandel interference by cross-correlating the optical signal from the separate output ports of the directional coupler. This experimental approach allows us to use classical light source (laser) to assess in a single step the overall device performance in the quantum regime and probe quantum dot photon indistinguishability on application realistic time scales.
description: 5 pages, 3 figures
n-Type Microcrystalline Silicon Oxide Layer and Its Application in Microcrystalline Silicon Single Junction and Multijunction Solar Cells
Creators: name: Bai, L.
name: Liu, B.
name: Ni, J.
name: Fang, J.
name: Zhang, D.
name: Wei, C.
name: Sun, J.
name: Zhao, Y.
name: Zhang, X.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
Silicon-based Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1664-1666
description: We report on the latest research and development of μc-Si:H single junction solar cell, a-Si:H/μc-Si:H
and a-Si:H/a-SiGe:H/μc-Si:H multijunction silicon solar cells in our laboratory. By incorporating n type
hydrogenated microcrystalline silicon oxide (μc-SiOx:H) alloys doped layer, significant improvement in open circuit
voltage was achieved for μc-Si:H single junction solar cells deposited by plasma-enhanced chemical vapor deposition
(PECVD). The relative open circuit voltage increase up to 5.6% has been observed, which may be attributed to the
reduced shunt current caused by the anisotropic electrical characteristics of the n-μc-SiOx layer. As a result of this
work, an initial efficiency of 13.41% of PIN type a-Si:H/μc-Si:H tandem solar cell and 15.06% for PIN type the a-
Si:H/a-SiGe:H/μc-Si:H triple junction solar cell were successfully achieved with an area of 0.25cm2.
Ab initio optimization principle for the ground states of translationally invariant strongly correlated quantum lattice models
Creators: name: Ran, Shi-Ju
Publisher: name: arXiv
Year: 2015
Subjects: subject: Strongly Correlated Electrons (cond-mat.str-el)
subject: Mathematical Physics (math-ph)
subject: Computational Physics (physics.comp-ph)
subject: FOS: Physical sciences

description: In this work, a simple and fundamental numeric scheme dubbed as ab-initio optimization principle (AOP) is proposed for the ground states of translational invariant strongly-correlated quantum lattice models. The idea is to transform a nondeterministic-polynomial-hard ground state simulation with infinite degrees of freedom into a single optimization problem of a local function with finite number of physical and ancillary degrees of freedom. This work contributes mainly in the following aspects: 1) AOP provides a simple and efficient scheme to simulate the ground state by solving a local optimization problem. Its solution contains two kinds of boundary states, one of which play the role of the entanglement bath that mimic the interactions between a supercell and the infinite environment, and the other give the ground state in a tensor network (TN) form. 2) In the sense of TN, a novel decomposition named as tensor ring decomposition (TRD) is proposed to implement AOP. Instead of following the contraction-truncation scheme used by many existing TN-based algorithms, TRD solves the contraction of a uniform TN in an opposite clue by encoding the contraction in a set of self-consistent equations that automatically reconstruct the whole TN, making the simulation simple and unified; 3) AOP inherits and develops the ideas of different well-established methods, including the density matrix renormalization group (DMRG), infinite time-evolving block decimation (iTEBD), network contractor dynamics, density matrix embedding theory, and etc., providing a unified perspective that is previously missing in this fields; 4) AOP as well as TRD gives novel implications to existing TN-based algorithms: a modified iTEBD is suggested and the 2D AOP is argued to be an intrinsic 2D extension of DMRG that is based on infinite projected entangled pair state.
description: 13 pages, 11 figures
Real Analyticity for random dynamics of transcendental functions
Creators: name: Mayer, Volker
name: Urbanski, Mariusz
name: Zdunik, Anna
Publisher: name: arXiv
Year: 2016
Subjects: subject: Dynamical Systems (math.DS)
subject: FOS: Mathematics
subject: 54C40

description: Analyticity results of expected pressure and invariant densities in the context of random dynamics of transcendental functions are established. These are obtained by a refinement of work by Rugh leading to a simple approach to analyticity. We work under very mild dynamical assumptions. Just the iterates of the Perron-Frobenius operator are assumed to converge. We also provide a Bowen's formula expressing the almost sure Hausdorff dimension of the radial fiberwise Julia sets in terms of the zero of an expected pressure function. Our main application states real analyticity for the variation of this dimension for suitable hyperbolic random systems of entire or meromorphic functions.
description: 33 pages
Neutrino masses and superheavy dark matter in the 3-3-1-1 model
Creators: name: Huong, D. T.
name: Dong, P. V.
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: In this work, we interpret the 3-3-1-1 model when the B-L and 3-3-1 breaking scales behave simultaneously as the inflation scale. This setup not only realizes the previously-achieved consequences of inflation and leptogenesis, but also provides new insights in superheavy dark matter and neutrino masses. We argue that the 3-3-1-1 model can incorporate a scalar sextet, which induces both small masses for the neutrinos via a combined type I and II seesaw and large masses for the new neutral fermions. Additionally, all the new particles have the large masses in the inflation scale. The lightest particle among the W-particles that have abnormal (i.e., wrong) B-L number in comparison to those of the standard model particles may be a superheavy dark matter as it is stabilized by the W-parity. The dark matter candidate may be a Majorana fermion, a neutral scalar, or a neutral gauge boson, which was properly created in the early universe due to the gravitational effects on the vacuum or the thermal production after cosmic inflation.
description: 34 pages, improved with discussions on inflation and reheating as well as presentation, matches published version in EPJC