title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ÑÑÐ¸ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð´Ð»Ñ Ð¿Ð»Ð°Ð½Ð°ÑÐ¸Ð·Ð°ÑÐ¸Ð¸ ÑÐµÑÐ¼Ð¾ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÑ ÐÐÐ-ÑÐ¸Ð»ÑÑÑÐ¾Ð²
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Research of the possibility of using ion-beam etching for planarization of ther-mocompensated SAW - filters
Creators: name: ÐÐµÐ»Ð°Ð²Ð¸Ð½Ð°, ÐÐ°ÑÐ°Ð»ÑÑ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: ÐÐºÑÑÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ°
ÐÑÐµÐ¼Ð½Ð¸Ð¹, Ð¾ÐºÐ¸ÑÐ»Ñ
ÑÐµÑÐ¼Ð¾ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ°ÑÐ¸Ñ
Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
Ð¿Ð»Ð°Ð½Ð°ÑÐ¸Ð·Ð°ÑÐ¸Ñ
thermocompensation
ion beam etching
planarization

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description: The presented work is devoted to the revealing the possibilities of ion beam etching procedure and choosing the optimal technological mode i.e. ionâs incidence angle for planarization of thermocompensated SAW â filters. The following goals were solved in the work: 1. Study the methods of improving the temperature coefficient of fre-quency and the effect of coatings on the characteristics of SAW â filters; 2. Study of planarization methods providing the optimization of fre-quency characteristics of SAW- filters; 3. Determination of the influence of the ICP-source power the angle of incidence of ions on the rate of the ion-beam etching process; 4. Determination of the optimal angle for the surface planarization of sil-icon oxide and analysis of the resulting surface microrelief. The work was fulfilled on the base of LLC (Limited lability Company) âAvangardâ, where the main experiments were performed. The dependences of the ion-beam etching rate for lithium niobate surface on the ICP - source power and ion incidence angle were determined. A theoretical calculation of the maxi-mum sputtering coefficient was performed for determining the etching rate of sil-icon oxide. The nonflatness parameter was determined for the silicon oxide sur-faces planarized of at various angles. The surface roughness after ion beam etch-ing was analyzed using AFM. As a result, the optimal ion angle of incidence was chosen for planarization of silicon oxide using ion beam etching. The effect of planarization on surface roughness was determined. The data obtained in the experiments will be used for the further optimization of silicon oxide planarization parameters, that influence the nonflatness and the condition of the obtained surface.