title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¿ÑÐ¸ Ð¼ÐµÐ¶Ð·Ð¾Ð½Ð½Ð¾Ð¹ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð½Ð°ÐºÐ°ÑÐºÐµ Ð² Ð¼Ð¸ÐºÑÐ¾ÑÑÑÑÐºÑÑÑÐ°Ñ Ñ Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¼Ð¸ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐ¼Ð¸ ÑÐ»Ð¾ÑÐ¼Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Investigation of terahertz luminescence upon interband optical pumping in microstructures with doped epitaxial layers
Creators: name: ÐÐµÑÑÑÐº, ÐÐ½ÑÐ¾Ð½
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2022
Subjects: Ð¤Ð¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ
Ð¿ÑÐ¸Ð¼ÐµÑÐ¸
ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐµ ÑÐ»Ð¾Ð¸
Ð¼Ð¸ÐºÑÐ¾ÑÑÑÑÐºÑÑÑÐ°
ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð°Ñ ÑÐ¼Ð¸ÑÑÐ¸Ñ
dopants
epitaxial layers
microstructure
terahertz emission

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ÑÑÐ¸ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ñ Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð² Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ ÑÑÑÑÐºÑÑÑÐ°Ñ Ñ Ð¾Ð±ÑÑÐ¼Ð½ÑÐ¼Ð¸ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐ¼Ð¸ ÑÐ»Ð¾ÑÐ¼Ð¸ n-GaAs Ð¿ÑÐ¸ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð½Ð°ÐºÐ°ÑÐºÐµ. ÐÐ´Ð½Ð¸Ð¼ Ð¸Ð· ÑÐµÑÐµÐ½Ð¸Ð¹ ÑÐ²Ð»ÑÐµÑÑÑ Ð¾ÑÐ³Ð°Ð½Ð¸Ð·Ð°ÑÐ¸Ñ Ð¾Ð¿ÑÑÑÐ¾ÑÐµÐ½Ð¸Ñ Ð¾ÑÐ½Ð¾Ð²Ð½Ð¾Ð³Ð¾ Ð¿ÑÐ¸Ð¼ÐµÑÐ½Ð¾Ð³Ð¾ ÑÑÐ¾Ð²Ð½Ñ ÑÑÐ¸Ð¼ÑÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¼ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸ÐµÐ¼ Ð±Ð»Ð¸Ð¶Ð½ÐµÐ³Ð¾ Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½Ð¾Ð³Ð¾ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð°. Ð ÑÐ°Ð±Ð¾ÑÐµ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¾ÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² Ñ Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¼Ð¸ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐ¼Ð¸ ÑÐ»Ð¾ÑÐ¼Ð¸ Ð¿ÑÑÑÐ¼ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ñ ÑÐ¿ÐµÐºÑÑÐ¾Ð² Ð±Ð»Ð¸Ð¶Ð½ÐµÐ¹ Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸, ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¸ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐ¿ÐµÐºÑÑÑ ÑÐ¾Ð´ÐµÑÐ¶Ð°Ñ Ð¸Ð½ÑÐ¾ÑÐ¼Ð°ÑÐ¸Ñ Ð¾Ð± ÑÐ½ÐµÑÐ³ÐµÑÐ¸ÑÐµÑÐºÐ¾Ð¹ ÑÑÑÑÐºÑÑÑÐµ Ð¸ Ð¸Ð·Ð»ÑÑÐ°ÑÐµÐ»ÑÐ½ÑÑ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ°Ñ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð². ÐÐ° Ð±Ð°Ð·Ðµ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð² Ð±ÑÐ´ÐµÑ Ð¿ÑÐ¾Ð´Ð¾Ð»Ð¶ÐµÐ½Ð° ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ Ð¾ÑÐ³Ð°Ð½Ð¸Ð·Ð°ÑÐ¸Ð¸ ÑÑÑÐµÐºÑÐ¸Ð²Ð½Ð¾Ð¹ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ ÑÐ¼Ð¸ÑÑÐ¸Ð¸ Ð² Ð¾Ð±ÑÑÐ¼Ð½ÑÑ ÑÐ»Ð¾ÑÑ GaAs Ñ ÑÐµÐ»ÑÑ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ¸ Ð½Ð¾Ð²ÑÑ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð² ÑÐ¾Ð²ÑÐµÐ¼ÐµÐ½Ð½Ð¾Ð¹ Ð¾Ð¿ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸.
description: The present work is devoted to the investigation of the possibilities to increase terahertz luminescence in semiconductor structures with bulk n-GaAs epitaxial layers upon interband optical pumping. One of the solutions is to organize the depopulation of the main impurity level using stimulated near infrared emission. We investigated samples with doped epitaxial layers measuring the near-infrared photoluminescence, terahertz photoluminescence, and terahertz photoconductivity. Spectral data contain information about energy structure and radiative characteristics of the samples. Based on the results, work will be continued to reach effective terahertz emission in bulk GaAs for the development of new devices of modern optoelectronics.