title: ÐÐ¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ ÑÐµÐ¿Ð»Ð¾Ð¾Ð±Ð¼ÐµÐ½Ð° Ð² ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ Ð²ÑÑÐ°ÑÐ¸Ð²Ð°Ð½Ð¸Ñ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Modeling of heat transfer in a plant for growing gallium oxide crystals
Creators: name: ÐÐ°Ð½ Ð¦ÑÐ½Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: Ð¾ÐºÑÐ¸Ð´ Ð³Ð°Ð»Ð»Ð¸Ñ
Ð²ÑÑÐ°ÑÐ¸Ð²Ð°Ð½Ð¸Ðµ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð²
ÑÐ¸ÑÐ»ÐµÐ½Ð½Ð¾Ðµ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ
Ð¿Ð¾Ð»Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ
ÑÐµÐ¿Ð»Ð¾Ð²ÑÐµ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ñ Ð² ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ðµ
gallium oxide
crystal growth
numerical modeling
temperature field
thermal stresses in a crystal

description: Ð Ð°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° ÑÐ¸ÑÐ»ÐµÐ½Ð½Ð¾Ð¼Ñ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ð¿Ð¾Ð»ÐµÐ¹ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ Ð² ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ Ð´Ð»Ñ Ð²ÑÑÐ°ÑÐ¸Ð²Ð°Ð½Ð¸Ñ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ð¸ Ð²ÑÐ±Ð¾ÑÑ Ð½Ð°Ð¸Ð»ÑÑÑÐ¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ Ð¸ Ð½Ð°Ð¸Ð¼ÐµÐ½ÑÑÐ¸Ñ ÑÐµÐ¿Ð»Ð¾Ð²ÑÑ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ð¹ Ð² Ð²ÑÑÐ°ÑÐ¸Ð²Ð°ÐµÐ¼Ð¾Ð¼ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ðµ. ÐÐ°Ð´Ð°ÑÐ¸, ÑÐµÑÐµÐ½Ð½ÑÐµ Ð² ÑÐ¾Ð´Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ: 1.Ð¡Ð¾Ð·Ð´Ð°Ð½Ð° Ð´Ð²ÑÐ¼ÐµÑÐ½Ð°Ñ ÑÐ°ÑÑÐµÑÐ½Ð°Ñ Ð¼Ð¾Ð´ÐµÐ»Ñ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ Ð´Ð»Ñ Ð²ÑÑÐ°ÑÐ¸Ð²Ð°Ð½Ð¸Ñ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ. 2.ÐÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ð° Ð¿ÑÐ¾Ð²ÐµÑÐºÐ° ÑÐ¾ÑÐ½Ð¾ÑÑÐ¸ Ð´Ð²ÑÐ¼ÐµÑÐ½Ð¾Ð¹ ÑÐ°ÑÑÐµÑÐ½Ð¾Ð¹ Ð¼Ð¾Ð´ÐµÐ»Ð¸ Ð¿ÑÑÐµÐ¼ ÑÑÐ°Ð²Ð½Ð¸Ð²Ð°ÐµÑÑÑ Ñ ÑÑÐµÑÐ¼ÐµÑÐ½ÑÐ¼ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸ÐµÐ¼, Ð¿ÑÐ¸Ð²ÐµÐ´ÐµÐ½Ð½ÑÐ¼ Ð² Ð»Ð¸ÑÐµÑÐ°ÑÑÑÐµ. 3.ÐÑÐ¿Ð¾Ð»Ð½ÐµÐ½ ÑÐ°ÑÑÐµÑ Ð¿Ð¾Ð»ÐµÐ¹ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ Ð² ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¿Ð¾Ð»Ð¾Ð¶ÐµÐ½Ð¸ÑÑ ÐºÐ°ÑÑÑÐºÐ¸ Ð¸Ð½Ð´ÑÐºÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ Ð¾ÑÐ½Ð¾ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ ÑÐ¸Ð³Ð»Ñ Ñ ÑÐ°ÑÐ¿Ð»Ð°Ð²Ð¾Ð¼. 4.ÐÑÐ¿Ð¾Ð»Ð½ÐµÐ½ ÑÐ°ÑÑÐµÑ Ð¿Ð¾Ð»ÐµÐ¹ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ Ð² ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ Ð¿ÑÐ¸ Ð½Ð°Ð»Ð¸ÑÐ¸Ð¸ ÐºÑÑÑÐºÐ¸ ÑÐ¸Ð³Ð»Ñ Ñ ÑÐ°ÑÐ¿Ð»Ð°Ð²Ð¾Ð¼. 5.Ð Ð°ÑÑÑÐ¸ÑÐ°Ð½Ñ ÑÐµÐ¿Ð»Ð¾Ð²ÑÐµ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ñ Ð² Ð²ÑÑÐ°ÑÐ¸Ð²Ð°ÐµÐ¼Ð¾Ð¼ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ðµ Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¿Ð¾Ð»Ð¾Ð¶ÐµÐ½Ð¸ÑÑ ÐºÐ°ÑÑÑÐºÐ¸. Ð Ð°Ð±Ð¾ÑÐ° Ð±ÑÐ»Ð° Ð²ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ð° Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½Ð¾Ð³Ð¾ Ð¾Ð±ÐµÑÐ¿ÐµÑÐµÐ½Ð¸Ñ CGsim (Crystal Growth Simulator). CGSim â ÑÑÐ¾ Ð¿Ð°ÐºÐµÑ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼, Ð¿ÑÐµÐ´Ð½Ð°Ð·Ð½Ð°ÑÐµÐ½Ð½ÑÐ¹ Ð´Ð»Ñ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÐ¾ÑÑÐ° ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¿Ð¾ Ð¼ÐµÑÐ¾Ð´Ñ Ð§Ð¾ÑÑÐ°Ð»ÑÑÐºÐ¾Ð³Ð¾ (Cz, LEC, VCz) Ð¸ ÐÑÐ¸Ð´Ð¶Ð¼ÐµÐ½Ð°, ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð½ÑÐ¹ ÐºÐ¾Ð¼Ð¿Ð°Ð½Ð¸ÐµÐ¹ Â«Soft-ImpactÂ» (Ð³. Ð¡.-ÐÐµÑÐµÑÐ±ÑÑÐ³). Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð°Ð½Ð°Ð»Ð¸Ð·Ð° Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¿Ð¾Ð»ÐµÐ¹ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ Ð² ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ Ð´Ð»Ñ Ð²ÑÑÐ°ÑÐ¸Ð²Ð°Ð½Ð¸Ñ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ð±ÑÐ»Ð¾ Ð¾Ð±Ð½Ð°ÑÑÐ¶ÐµÐ½Ð¾, ÑÑÐ¾ ÐºÐ¾Ð³Ð´Ð° Ð¸Ð½Ð´ÑÐºÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÐºÐ°ÑÑÑÐºÐ° Ð½Ð°ÑÐ¾Ð´Ð¸ÑÑÑ Ð² Ð²ÐµÑÑÐ½ÐµÐ¹ ÑÐ°ÑÑÐ¸ ÑÐ¸Ð³Ð»Ñ, Ð´Ð»Ñ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¾Ð´Ð¸Ð½Ð°ÐºÐ¾Ð²Ð¾Ð³Ð¾ ÑÐ°Ð·Ð¼ÐµÑÐ°, ÑÐ°ÑÑÑÑÐ¸Ñ Ñ Ð¾Ð´Ð¸Ð½Ð°ÐºÐ¾Ð²Ð¾Ð¹ ÑÐºÐ¾ÑÐ¾ÑÑÑÑ, ÑÐµÐ¿Ð»Ð¾Ð²ÑÐµ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ñ Ð² Ð²ÑÑÐ°ÑÐ¸Ð²Ð°ÐµÐ¼Ð¾Ð¼ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ðµ ÑÐ²Ð»ÑÑÑÑÑ Ð½Ð°Ð¸Ð¼ÐµÐ½ÑÑÐ¸Ð¼Ð¸, Ð¿ÑÐ¸ ÑÐ°Ð¼Ð¾Ð¹ Ð½Ð¸Ð·ÐºÐ¾Ð¹ ÑÐµÐ¿Ð»Ð¾Ð²Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð¸ ÑÐ°ÑÑÐ¾Ð´Ðµ ÑÐ»ÐµÐºÑÑÐ¾ÑÐ½ÐµÑÐ³Ð¸Ð¸, ÑÐ¾ ÐµÑÑÑ ÑÐ°ÐºÐ¾Ðµ Ð¿Ð¾Ð»Ð¾Ð¶ÐµÐ½Ð¸Ðµ ÐºÐ°ÑÑÑÐºÐ¸ ÑÐ²Ð»ÑÐµÑÑÑ Ð½Ð°Ð¸Ð»ÑÑÑÐ¸Ð¼.
description: This work is devoted to the study of modeling the thermal field of devices for growing gallium oxide crystals and determining the best conditions of the thermal field for growing gallium oxide crystals. Tasks solved during the research: 1.A two-dimensional model of a device for growing gallium oxide crystals has been created. 2.To verify the accuracy of the calculation, the distribution of the thermal field of the growing device is calculated and compared with the three-dimensional modeling given in the literature. 3.The distribution of the thermal field of the device is calculated when the coil is in different positions. 4.After calculating the distribution of the thermal field of the device after installing the crucible lid. 5.The thermal stress during crystal growth in various coil positions is calculated. The work was performed using CGsim (Crystal Growth Simulator) software. CGSim is a software package designed to simulate crystal growth using the Czochralski (Cz, LEC, VCz) and Bridgman method, developed by Soft-Impact (St. Petersburg). As a result of the analysis of the obtained temperature fields in the plant for growing gallium oxide crystals, it was found that when the induction coil is located in the upper part of the crucible, for crystals of the same size growing at the same speed, the thermal stresses in the grown crystal are the lowest, with the lowest thermal power and energy consumption, i.e. this position of the coil is the best.