VP14-02 Electric Field Control of Spin in Monolayer WS2/WTe2 Field Effect Transistors:- A DFT+NEGF Study
Creators: Ashutosh Shah
Arti Kashyap
Publisher: name: IEEE
Year: 2025

Two-dimensional transition metal dichalcogenides(TMDC) like MoS2 and WSe2 have garnered significant interest for spintronic applications. However, monolayer WS2, despite its intriguing electronic properties, remains relatively unexplored for such purposes. This study presents a first-principles theoretical investigation of quantum transport in a monolayer WS2/WTe2 field-effect transistor, focusing on the electric control of spin. Leveraging the strong spin-orbit interaction inherent to WS2 and its unique electronic structure, we demonstrate the potential for spin manipulation via an external gate electric field. Our calculations, based on density functional theory and the non-equilibrium Green's function formalism, reveal that the gate voltage can induce a significant shift in the spin texture of the WS2 channel, transitioning from a Zeeman-like to a Rashbha-like spin texture with increasing field strength. This electric field-induced spin control leads to a substantial modulation of the conductance, with variations observed within experimentally accessible gate voltage ranges. We analyse the interplay between the intrinsic spin orbit interaction(SOI) of WS2 and the Rashbha spin-orbit coupling generated by the applied gate voltage and discuss its implications for potential spintronic applications of monolayer WS2/WTe2 FETs. Our findings provide a theoretical foundation for the development of novel spin-based devices leveraging the unique properties of this promising two-dimensional material. Key Words :- Spintronics, monolayer, spin-FET, Rashbha Spin orbit, conductance, electronic transport, TMDC.References: 1.Gong, K., Zhang, L., Liu, D., Liu, L., Zhu, Y., Zhao, Y. and Guo, H., 2014. Electric control of spin in monolayer WSe2 field effect transistors. Nanotechnology, 25(43), p.435201. 2.Semenov, Y.G., Kim, K.W. and Zavada, J.M., 2007. Spin field effect transistor with a graphene channel. Applied Physics Letters, 91(15). 3.Chuan, M.W., Wong, K.L., Hamzah, A., Rusli, S., Alias, N.E., Lim, C.S. and Tan, M.L., 2020. 2D honeycomb silicon: A review on theoretical advances for silicene field-effect transistors. Current Nanoscience, 16(4), pp.595-607.
Two-dimensional transition metal dichalcogenides(TMDC) like MoS2 and WSe2 have garnered significant interest for spintronic applications. However, monolayer WS2, despite its intriguing electronic properties, remains relatively unexplored for such purposes. This study presents a first-principles theoretical investigation of quantum transport in a monolayer WS2/WTe2 field-effect transistor, focusing on the electric control of spin. Leveraging the strong spin-orbit interaction inherent to WS2 and its unique electronic structure, we demonstrate the potential for spin manipulation via an external gate electric field. Our calculations, based on density functional theory and the non-equilibrium Green's function formalism, reveal that the gate voltage can induce a significant shift in the spin texture of the WS2 channel, transitioning from a Zeeman-like to a Rashbha-like spin texture with increasing field strength. This electric field-induced spin control leads to a substantial modulation of the conductance, with variations observed within experimentally accessible gate voltage ranges. We analyse the interplay between the intrinsic spin orbit interaction(SOI) of WS2 and the Rashbha spin-orbit coupling generated by the applied gate voltage and discuss its implications for potential spintronic applications of monolayer WS2/WTe2 FETs. Our findings provide a theoretical foundation for the development of novel spin-based devices leveraging the unique properties of this promising two-dimensional material. Key Words :- Spintronics, monolayer, spin-FET, Rashbha Spin orbit, conductance, electronic transport, TMDC.References: 1.Gong, K., Zhang, L., Liu, D., Liu, L., Zhu, Y., Zhao, Y. and Guo, H., 2014. Electric control of spin in monolayer WSe2 field effect transistors. Nanotechnology, 25(43), p.435201. 2.Semenov, Y.G., Kim, K.W. and Zavada, J.M., 2007. Spin field effect transistor with a graphene channel. Applied Physics Letters, 91(15). 3.Chuan, M.W., Wong, K.L., Hamzah, A., Rusli, S., Alias, N.E., Lim, C.S. and Tan, M.L., 2020. 2D honeycomb silicon: A review on theoretical advances for silicene field-effect transistors. Current Nanoscience, 16(4), pp.595-607.