title: ÐÐ»Ð¸ÑÐ½Ð¸Ðµ ÑÐµÑÐ¼Ð¸ÑÐµÑÐºÐ¾Ð¹ Ð¾Ð±ÑÐ°Ð±Ð¾ÑÐºÐ¸ Ð½Ð° Ð´ÐµÑÐµÐºÑÐ½ÑÑ ÑÑÑÑÐºÑÑÑÑ Ð¼Ð¾Ð½Ð¾ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Î²-Ga2O3 Ð¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÐµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÐµÐ³Ð¾ Ð³Ð°Ð·Ð¾ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½ÑÑ ÑÐ²Ð¾Ð¹ÑÑÐ²
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Effect of heat treatment on the defective structure of Î²-Ga2O3 single crystals and temperature dependences of its gas-sensitive properties
Creators: name: ÐÐ°ÑÐ¸ÑÐ½ÑÐ¹, ÐÐ½ÑÐ¾Ð½
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ga2O3
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ÑÐ¼ÐºÐ¸ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ
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ÑÐ»ÑÑÑÐ°ÑÐ¸ÑÐ¾ÐºÐ¾Ð·Ð¾Ð½Ð½ÑÐµ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¸
structure defects
selective wet etching
x-ray diffraction
gas-sensitive properties
schottky barier diode
scanning electron microscopy
etch pits
dislocations
ultra-wide bandgap semiconductors

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð²ÑÑÐ²Ð»ÐµÐ½Ð¸Ñ Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÑÑÑÐºÑÑÑÐ½ÑÑ Ð´ÐµÑÐµÐºÑÐ¾Ð² Ð² ÑÐ»ÑÑÑÐ°ÑÐ¸ÑÐ¾ÐºÐ¾Ð·Ð¾Ð½Ð½Ð¾Ð¼ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð¼ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ðµ Î²-Ga2O3, Ð° ÑÐ°ÐºÐ¶Ðµ Ð°Ð½Ð°Ð»Ð¸Ð·Ñ ÐµÐ³Ð¾ Ð³Ð°Ð·Ð¾ÑÑÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½Ð¾ÑÑÐ¸ Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ Ð² Ð°ÑÐ¼Ð¾ÑÑÐµÑÐµ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð°. Ð ÑÐ¾Ð´Ðµ Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ Ð¿Ð¾ÑÑÐ°Ð²Ð»ÐµÐ½Ñ ÑÐ»ÐµÐ´ÑÑÑÐ¸Ðµ Ð·Ð°Ð´Ð°ÑÐ¸: Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ ÑÐµÐ¶Ð¸Ð¼Ð¾Ð² ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð´Ð»Ñ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐµÐº (2Ì01) Î²-Ga2O3 Ñ ÑÐµÐ»ÑÑ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð³ÐµÐ¾Ð¼ÐµÑÑÐ¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¸ ÑÑÐµÐ´Ð½ÐµÐ¹ Ð¿Ð»Ð¾ÑÐ½Ð¾ÑÑÐ¸ ÑÐ¼Ð¾Ðº ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ; Ð°Ð½Ð°Ð»Ð¸Ð· Ð´ÐµÑÐµÐºÑÐ½Ð¾Ð¹ ÑÑÑÑÐºÑÑÑÑ Ð¾Ð±ÑÐµÐ¼Ð½ÑÑ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¾ÐºÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ ÑÐµÐ½ÑÐ³ÐµÐ½Ð¾ÑÑÑÑÐºÑÑÑÐ½Ð¾Ð¹ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ (ÑÐµÐ¶Ð¸Ð¼Ñ Î¸-2Î¸-ÑÐºÐ°Ð½Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ð¸ Ï-ÑÐºÐ°Ð½Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ); ÑÐ½Ð¸Ð¶ÐµÐ½Ð¸Ðµ Ð¿Ð»Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð´ÐµÑÐµÐºÑÐ¾Ð² ÑÑÑÑÐºÑÑÑÑ Ð¿ÑÑÐµÐ¼ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð¾ÑÐ¶Ð¸Ð³Ð° Ð¿Ð¾ Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¼ ÑÐµÐ¶Ð¸Ð¼Ð°Ð¼; Ð°Ð½Ð°Ð»Ð¸Ð· Ð²Ð¾Ð»ÑÑ-Ð°Ð¼Ð¿ÐµÑÐ½ÑÑ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº Î²-Ga2O3 Ð² Ð°ÑÐ¼Ð¾ÑÑÐµÑÐµ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð¿ÑÐ¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ 30-200 Â°C.
description: The present paper is dedicated to the identification and study of structural defects in the ultra-wide bandgap semiconductor crystal Î²-Ga2O3, as well as the analysis its gas sensitivity to hydrogen at different temperatures. The author outlines the following tasks: optimization of selective wet etching modes for (2Ì01) Î²-Ga2O3 substrates, determining geometric parameters and average density of etch pits; analyzing the defect structure of bulk gallium oxide crystals using X-ray diffraction techniques such as Î¸-2Î¸-scanning and Ï-scanning; reducing the density of structure defects by annealing at optimized modes; analysis of the CVC of Î²-Ga2O3 substrates in a hydrogen atmosphere at 30-200 Â°C temperatures range.