title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð¹ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ð¸ Ð¼Ð¸ÐºÑÐ¾Ð´Ð¸ÑÐºÐ¾Ð²ÑÑ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ¾Ð² Ñ Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÑÑ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¾ÑÐµÐº
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Investigation of laser generation of microdisk resonators with an active region based on quantum dots
Creators: name: ÐÑÐµÑÐ°Ð½Ð¸Ð½Ð¾Ð²Ð°, ÐÐ²Ð³ÐµÐ½Ð¸Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÐ¹ Ð»Ð°Ð·ÐµÑ
Ð¼Ð¸ÐºÑÐ¾Ð´Ð¸ÑÐºÐ¾Ð²ÑÐ¹ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾Ñ
Ð¼Ð¾Ð´Ñ ÑÐµÐ¿ÑÑÑÐµÐ¹ Ð³Ð°Ð»ÐµÑÐµÐ¸
ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¾ÑÐºÐ¸
ÑÐ»ÐµÐºÑÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ
semiconductor laser
microdisk resonator
whispering gallery mods
quantum dots
electroluminescence

description: ÐÐµÑÐ¾Ð´Ð¾Ð¼ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸ ÑÐ»ÐµÐºÑÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð¼Ð¸ÐºÑÐ¾Ð´Ð¸ÑÐºÐ¾Ð²ÑÐµ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÑ Ñ Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÑÑ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¾ÑÐµÐº InAs /InGaAs, Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÐµ Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ GaAs Ð¸ ÑÐ¼Ð¾Ð½ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐµ Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÑ Si Ð¿ÑÐ¸ Ð¿Ð¾Ð¼Ð¾ÑÐ¸ Ð¸Ð½Ð´Ð¸ÐµÐ²Ð¾Ð³Ð¾ Ð¿ÑÐ¸Ð¿Ð¾Ñ. 
Ð¥Ð°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ Ð»Ð°Ð·ÐµÑÐ° Ð¸Ð·Ð¼ÐµÑÑÐ»Ð¸ÑÑ Ð¿ÑÐ¸ ÐºÐ¾Ð¼Ð½Ð°ÑÐ½Ð¾Ð¹ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐµ Ð² Ð½ÐµÐ¿ÑÐµÑÑÐ²Ð½Ð¾Ð¼ ÑÐµÐ¶Ð¸Ð¼Ðµ. ÐÐ° ÑÐ¿ÐµÐºÑÑÐ°Ñ ÑÐ»ÐµÐºÑÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ° (D = 40 Ð¼ÐºÐ¼) Ð½Ð°Ð±Ð»ÑÐ´Ð°Ð»Ð¸ÑÑ ÑÐ·ÐºÐ¸Ðµ ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ½ÑÐµ Ð»Ð¸Ð½Ð¸Ð¸, ÑÐ¾Ð¾ÑÐ²ÐµÑÑÑÐ²ÑÑÑÐ¸Ðµ Ð²ÑÑÐ¾ÐºÐ¾Ð´Ð¾Ð±ÑÐ¾ÑÐ½ÑÐ¼ Ð¼Ð¾Ð´Ð°Ð¼ ÑÐµÐ¿ÑÑÑÐµÐ¹ Ð³Ð°Ð»ÐµÑÐµÐ¸ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ°. ÐÐ¾ÑÐ¾Ð³Ð¾Ð²ÑÐ¹ ÑÐ¾Ðº ÑÐ¾ÑÑÐ°Ð²Ð¸Ð» 9 Ð¼Ð, Ð° Ð´Ð¾Ð±ÑÐ¾ÑÐ½Ð¾ÑÑÑ, Ð¾ÑÐµÐ½ÐµÐ½Ð½Ð°Ñ Ð½Ð° Ð¿Ð¾ÑÐ¾Ð³Ðµ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ð¸ Ð»Ð°Ð·ÐµÑÐ°, ÑÐ¾ÑÑÐ°Ð²Ð¸Ð»Ð° Ð±Ð¾Ð»ÐµÐµ 90 000, ÑÑÐ¾ ÑÐ¾Ð¾ÑÐ²ÐµÑÑÑÐ²Ð¾Ð²Ð°Ð»Ð¾ Ð·Ð½Ð°ÑÐµÐ½Ð¸ÑÐ¼ Ð´Ð¾ Ð¿ÐµÑÐµÐ½Ð¾ÑÐ° Ð½Ð° ÐºÑÐµÐ¼Ð½Ð¸Ð¹. ÐÑÐ¸ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ð¸ ÑÐ¾ÐºÐ° Ð½Ð°ÐºÐ°ÑÐºÐ¸ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð¾Ðµ Ð¿Ð¾Ð»Ð¾Ð¶ÐµÐ½Ð¸Ðµ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð¹ Ð»Ð¸Ð½Ð¸Ð¸ Ð¸Ð·Ð¼ÐµÐ½ÑÐ»Ð¾ÑÑ Ð² Ð´Ð»Ð¸Ð½Ð½Ð¾Ð²Ð¾Ð»Ð½Ð¾Ð²Ð¾Ð¼ Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ð¸ Ñ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ¾Ð¼ 0,067 Ð½Ð¼/Ð¼Ð. Ð¡Ð¿ÐµÐºÑÑÐ°Ð»ÑÐ½ÑÐ¹ ÑÐ´Ð²Ð¸Ð³, Ð½Ð¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¹ Ð½Ð° Ð¿Ð¾ÑÑÐµÐ±Ð»ÑÐµÐ¼ÑÑ Ð¼Ð¾ÑÐ½Ð¾ÑÑÑ, ÑÐ¾ÑÑÐ°Ð²Ð¸Ð» 0,04 Ð½Ð¼/Ð¼ÐÑ. ÐÑÐºÑÐ´Ð° Ð¾ÑÐµÐ½ÐµÐ½Ð½Ð¾Ðµ ÑÐµÐ¿Ð»Ð¾Ð²Ð¾Ðµ ÑÐ¾Ð¿ÑÐ¾ÑÐ¸Ð²Ð»ÐµÐ½Ð¸Ðµ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ° ÑÐ¾ÑÑÐ°Ð²Ð¸Ð»Ð¾ 0,53 Ð/Ð¼ÐÑ.
Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¸, ÑÑÐ¾ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð½ÑÐ¹ Ð¼ÐµÑÐ¾Ð´ Ð¿ÐµÑÐµÐ½Ð¾ÑÐ° Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ¾Ð² Ñ ÐÐ¢ InAs / InGaAs Ð½Ð° ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÑ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÑ Ð½Ðµ Ð¿ÑÐ¸Ð²Ð¾Ð´Ð¸Ñ Ðº ÑÑÑÐ´ÑÐµÐ½Ð¸Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ¾Ð². Ð¢ÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ñ Ð¼ÐµÑÐ°Ð½Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÐºÑÐµÐ¿Ð»ÐµÐ½Ð¸Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ¾Ð² Ð½Ð° ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾Ð¹ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ Ð¼Ð¾Ð¶ÐµÑ Ð±ÑÑÑ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½Ð¾Ð¹ Ð´Ð»Ñ Ð³Ð¸Ð±ÑÐ¸Ð´Ð½Ð¾Ð¹ Ð¸Ð½ÑÐµÐ³ÑÐ°ÑÐ¸Ð¸ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ¾Ð² Ñ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ°Ð¼Ð¸ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÑ Ð¼Ð¸ÐºÑÐ¾ÑÑÐµÐ¼.
description: Microdisk resonators based on InAs/GaAs quantum dots growned by molecular beam epitaxy on GaAs substrate and transferred on a silicon chip are studied using luminescence spectroscopy.
The laser characteristics were measured at room temperature under continuous-wave operation. Narrow resonance lines corresponding to whispering gallery modes were observed in the electroluminescence spectra. The threshold current was 10 mA, and the Q-factor, estimated at the laser generation threshold, was more than 90 000, which corresponded to the values before integration with silicon. As pump current increases, the spectral position of the laser line changed in the long-wavelength direction with a coefficient of 0.067 nm/mA. The spectral shift normalized to power consumption was 0.04 nm/mW. The thermal resistance of the microlaser was 0.53 K/mW, which also corresponds to the value of the thermal resistance of the original microlaser before it was transferred on silicon.
The results showed that the developed method for transferring microlasers with InAs / InGaAs QDs onto a silicon substrate does not lead to a deterioration in the characteristics of microlasers. The technology of the mechanical fastening of microresonators on a Si substrate can be promising for the hybrid integration of microlasers with elements of silicon chips.