cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Engineering SiO2/TiO2 Stacks for Improved Electron Selective Contacts
Creators: name: Costa, I.
name: Vilhena, D.
name: Gaspar, G.
name: Pera, D.
name: Canhoto Cardoso, J.
name: Lobato, K.
name: Almeida Silva, J.
name: Almeida Serra, J.M.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 560-563
description: To increase the conversion efficiency of crystalline silicon solar cells, reduction of the recombination losses associated with the contacts is a must. Therefore, a contact structure that simultaneously passivates the c-Si surface while selectively extracting only one type of charge carrier (i.e., either electrons or holes) is desired. Therefore, recently such passivating contacts in c-Si solar cells has become an important research objective. Oxide/poly-Si concepts have been used to successfully reduce contact recombination. However, the use of poly-Si, namely at the front contact, introduces unwanted absorption of the sunlight. So, in addition to the electrical properties, the optical losses have to be minimized both on the front and rear sides of the solar cell for any contact structure. Furthermore, we aim at developing high quality selective contacts that can be deposited easily and economically. To address the problem caused by absorption in the top contact we studied different stacks using SiO2 and Ti and TiO2 layers with variable combinations, along two routes: high temperature route, in which the silicon oxide is obtained by thermal oxidation and a low temperature route where the silicon oxide is obtained by chemical oxidation or by e-beam evaporation. The results show that the introduction of the additional Ti layer is not beneficial when compared to stacks without this layer. High temperature thermal SiO2 (900C) gives lower lifetimes when compared to the low temperature thermal oxide (775C). Annealing is crucial to enhance the final lifetimes in all explored stacks.
Back Contact Coating to Increase the Efficiency of Polycrystalline Silicon Solar Cells
Creators: name: Kashyout, A.-E.-H.-B
name: El-Hashash, S.
name: AbdelRassoul, R.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 564-569
description: Spin coating on the back contact of polycrystalline silicon solar cells to increase the photoconversion efficiency of the cell is reported. Four successive layers of colloidal polythiophene (PT) and polythiophene with embedded gold nanoparticles (PT-Au) were spun on the back contact of the cell, followed by a simple heat treatment at 70 oC for 30 min. Characterization by transmission electron microscope (TEM), Scanning electron microscope (SEM), and (UV-Vis) spectrophotometer for studying the optical characteristics of the polymer and Au nanoparticles embedded in the polymers. Optical characteristics exhibited high absorption in the near UV region and a plasmonic peak at around 580 nm, and the calculated energy gap ranged from 2.9 eV (PT) to 3.05 eV (PT-Au 5%). The silicon solar cells were characterized by measuring the photoconversion efficiency, fill factor, series and shunt resistances, before and after coating. The coating was found to reduce the series resistance and to increase the efficiency by up to 7.25%.
Long-range states of the NaRb molecule near the Na($3^2S_{1/2}$)+Rb($5^2P_{3/2}$) asymptote
Creators: name: Zhu, Bing
name: Li, Xiaoke
name: He, Xiaodong
name: Guo, Mingyang
name: Wang, Fudong
name: Vexiau, Romain
name: Bouloufa-Maafa, Nadia
name: Dulieu, Olivier
name: Wang, Dajun
Publisher: name: arXiv
Year: 2016
Subjects: subject: Atomic Physics (physics.atom-ph)
subject: FOS: Physical sciences

description: We report a high-resolution spectroscopic investigation of the long-range states of the $^{23}$Na$^{87}$Rb molecule near its Na($3^2S_{1/2}$)+Rb($5^2P_{3/2}$) asymptote. This study was performed with weakly bound ultracold molecules produced via magneto-association with an inter-species Feshbach resonance. We observed several regular vibrational series, which are assigned to the 5 attractive long-range states correlated with this asymptote. The vibrational levels of two of these states have sharp but complex structures due to hyperfine and Zeeman interactions. For the other states, we observed significant linewidth broadenings due to strong predissociation caused by spin-orbit couplings with states correlated to the lower Na($3^2S_{1/2}$)+Rb($5^2P_{1/2}$) asymptote. The long-range $C_6$ van der Waals coefficients extracted from our spectrum are in good agreement with theoretical values.
description: Phys.Rev. A in press
Possible Existence of Superconductivity in the Quasi-One-Dimensional Conductor Li$_{0.9}$Mo${_6}$O$_{17}$ at Ultrahigh Magnetic Fields, $H \geq 45 \ T$
Creators: name: Lebed, Andrei G.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Superconductivity (cond-mat.supr-con)
subject: FOS: Physical sciences

description: We derive a so-called gap equation for superconductivity in a quasi-one-dimensional (Q1D) layered conductor in a magnetic field, which is parallel to both its conducting plane and its conducting axis. This equation demonstrates that the orbital destructive effects against superconductivity cannot destroy it, if the perpendicular to the plane coherence length is less than the inter-plane distance. On the basis of our results, we suggest arguments that some triplet superconducting phase was indeed discovered in ultrahigh magnetic fields in the Q1D superconductor Li$_{0.9}$Mo$_6$O$_{17}$ [see Xiaofeng Xu et al., Phys. Rev. Lett., $\bf{102}$, 206602 (2009).] We also discuss a possibility that the above-mentioned superconducting phase can be stable at arbitrary high magnetic fields.
description: 5 pages, 1 figure
Leveraging MPI-3 Shared-Memory Extensions for Efficient PGAS Runtime Systems
Creators: name: Zhou, Huan
name: Idrees, Kamran
name: Gracia, José
Publisher: name: arXiv
Year: 2016
Subjects: subject: Distributed, Parallel, and Cluster Computing (cs.DC)
subject: FOS: Computer and information sciences

description: The relaxed semantics and rich functionality of one-sided communication primitives of MPI-3 makes MPI an attractive candidate for the implementation of PGAS models. However, the performance of such implementation suffers from the fact, that current MPI RMA implementations typically have a large overhead when source and target of a communication request share a common, local physical memory. In this paper, we present an optimized PGAS-like runtime system which uses the new MPI-3 shared-memory extensions to serve intra-node communication requests and MPI-3 one-sided communication primitives to serve inter-node communication requests. The performance of our runtime system is evaluated on a Cray XC40 system through low-level communication benchmarks, a random-access benchmark and a stencil kernel. The results of the experiments demonstrate that the performance of our hybrid runtime system matches the performance of low-level RMA libraries for intra-node transfers, and that of MPI-3 for inter-node transfers.
description: 12 papers, accepted for publication in EuroPar 2015
Single-Step Periodic Photoelectrochemical Texturing of Silicon for Photovoltaics
Creators: name: Avishan, N.
name: Akbiyik, A.
name: Yüce, E.
name: Bek, A.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 549-553
description: Compared to antireflection coatings, surface texturing achieved by wet and dry etching methods is an efficient and long-lasting technique for reflection reduction by enhancing light trapping. In this work, laser-assisted wet chemical etching, or more commonly, photoelectrochemical etching (PEC-etching) is introduced as an alternative texturing technique with high application potential to thin silicon (Si) wafers and multi-crystalline Si solar cells. In this method, high power laser radiation is used to create nanoholes. By utilizing a digital micro-mirror device, it is possible to texture the surface in periodic patterns to get better optical performance without compromising electrical performance. Here, full and partial surface texturing achieved by structured light PEC-etching is reported. The SEM images and reflectance measurements are reported for different laser powers. The purpose is to keep the electrical properties as high as possible by keeping some regions smooth while the nanostructures on the etched regions will improve the optical properties by light trapping. The lowest average measured reflectance value for fully textured Si and the periodically textured Si was reported to be 9% at a laser power of 650 mW and 15% at a laser power of 350 mW, respectively.
Emergence of charge order in a staggered loop-current phase of cuprate high-temperature superconductors
Creators: name: Atkinson, W. A.
name: Kampf, A. P.
name: Bulut, S.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Superconductivity (cond-mat.supr-con)
subject: FOS: Physical sciences

description: We study the emergence of charge ordered phases within a pi-loop current (piLC) model for the pseudogap based on a three-band model for underdoped cuprate superconductors. Loop currents and charge ordering are driven by distinct components of the short-range Coulomb interactions: loop currents result from the repulsion between nearest-neighbor copper and oxygen orbitals, while charge order results from repulsion between neighboring oxygen orbitals. We find that the leading piLC phase has an antiferromagnetic pattern similar to previously discovered staggered flux phases, and that it emerges abruptly at hole dopings p below the van Hove filling. Subsequent charge ordering tendencies in the piLC phase reveal that diagonal d-charge density waves (dCDW) are suppressed by the loop currents while axial order competes more weakly. In some cases we find a wide temperature range below the loop-current transition, over which the susceptibility towards an axial dCDW is large. In these cases, short-range axial charge order may be induced by doping-related disorder. A unique feature of the coexisting dCDW and piLC phases is the emergence of an incommensurate modulation of the loop currents. If the dCDW is biaxial (checkerboard) then the resulting incommensurate current pattern breaks all mirror and time-reversal symmetries, thereby allowing for a polar Kerr effect.
Heterojunction Silicon Solar Cells Incorporating Unpatterned MoOx and LiFx/Al on Wet-Chemically Processed Silicon Surfaces
Creators: name: Tsoi, K.
name: Türkay, D.
name: Donercark, E.
name: Çiftpinar, E.H.
name: Ghasemi, M.
name: Turan, R.
name: Yerci, S.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 554-559
description: Among carrier selective layers that can be thermally evaporated, MoOx and Al-capped LiFx have shown promising performance. Here, we investigate the electrical performance of hole-selective MoOx and electron-selective LiFx/Al on (n)c-Si surfaces with wet-chemically grown SiOx by RCA-1 and RCA-2, without employing additional passivating layers such as intrinsic amorphous silicon. We analyze the effect of these chemically-grown oxides on the contact resistivity of (n)c-Si/LiFx/Al and passivation of (n)c-Si/MoOx interfaces, and achieve the highest quality for both interfaces with RCA-2 grown oxide. For a double side polished, 2x2 cm2 (n)c-Si solar cell, we demonstrate an open-circuit voltage > 615 mV and a fill factor > 78 %. For a double-side pyramid textured cell, a power conversion efficiency (PCE) of 15.72 % is demonstrated, which is the highest reported PCE for the topology analyzed in this work. Furthermore, we perform a cost analysis to identify the requirements for this device structure to be competitive with devices utilizing the same carrier-selective layers with additional passivating layers.
Effects of heat and drought stress on the health status of six urban street tree species in Leipzig, Germany
Creators: name: Haase, Dagmar
name: Hellwig, Rebecca
Publisher: name: Humboldt-Universität zu Berlin
Year: 2022
Subjects: subject: Heat
subject: Drought stress
subject: Street trees
subject: Damage
subject: Crown defoliation
subject: Climate change
subject: Mapping
subject: Leipzig
subject: 333.7 Landflächen, Naturräume für Freizeit und Erholung, Naturreservate, Energie

description: Trees are one of the most important elements of green infrastructure in cities. Climate change is specifically affecting trees in many European cities. Trees are experiencing negative impacts from the increase in heat waves and droughts, both of which begin, in some cases, early in the year and continue through the growing season. Current studies on the regionalization of climate change indicate that important water reservoirs such as soil and tree canopies have been drying out for years/decades, and these impacts can be observed in various parts of Europe. Trees react to stress as they age through mechanisms such as crown defoliation, early wilting, shedding of branches and, ultimately, lowered resistance to pests. As a result, massive tree death, both in park trees and street trees, can be observed in many cities. The present study provides a current inventory of street tree damage caused by heat and drought in the city of Leipzig, Germany, in 2020, the third extreme dry year after 2018 and 2019. The field maps focus on different age groups of Quercus, Tilia, Aesculus, Platanus, Fraxinus and Acer along a periurban-urban gradient. The results are clear: significant damage was found in all tree species. Older trees and newly planted trees are most likely to die as a result of extreme conditions, while younger trees with narrow trunks and crowns that have not yet expanded cope better with both heat and drought. Four out of five mapped street trees showed recognizable damage, indicating severe impacts of climate change on important elements of green infrastructure in cities.
Screen-Printed Aluminium Contacts on n+-Doped Silicon
Creators: name: Suzuki, S.
name: Peng, Z.-W.
name: Tsuji, K.
name: Nakahara, M.
name: Morishita, N.
name: Kuroki, T.
name: Adrian, A.
name: Dhamrin, M.
name: Buck, T.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 542-544
description: In this paper the conditions for forming contacts to n+-Si using a low-cost aluminium (Al) thick film paste material and screen printing technique in combination with conventional high temperature belt furnace sintering were investigated. The test structures feature a tunneling oxide layer below a n+ polycrystalline silicon (poly-Si)/silicon nitride (SiNx) stack. The n+ poly-Si layer was modified resulting in three different surface doping concentrations (ND). After line-shaped laser contact openings (LCOs), the Al paste was printed in a grid pattern on top of the LCOs and fired with various temperature settings. Thereafter, the contact resistivity (c) for each variation was measured by TLM. As a result, it was confirmed that the c is greatly affected by ND. In the same time, it was found that the peak firing temperature has less impact on the c than ND. However, J0, Met of the lowest c sample was high for a passivated contact. In addition, screen-printed Al metallisation on both sides of a n-PERT front junction solar cell was fabricated and characterized.
Die Geschichte der Kirche als unentbehrlicher Schlüssel zur Interpretation der Entscheidungen des Lehramtes
Creators: name: Aubert, Roger
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 6 Nr. 8/9 (1970): Concilium: Internationale Zeitschrift für Theologie, Band 6, Heft 8/9
Reduced Surface Reflection of Solar Silicon and Solar Glass by Maskless Plasma Texturing with CHF3/H2
Creators: name: Okhorzina, A.
name: Bernhard, N.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 545-548
description: The reduction of reflection at the glass surface of a solar module and at the encapsulation polymer to silicon interface in the module leads to an efficiency improvement of the module. Plasma texturing with a CHF3/H2 chemistry was applied to both glass and silicon surfaces to reduce their reflectivity. Spectrally resolved reflection and transmission measurements were performed to measure the effect of the texturing. Complementary SEM pictures were taken for the Si samples, and AFM measurements on the glass surface were performed to verify the texturing. It was shown that the plasma texturing with CHF3/H2 chemistry can reduce the reflectivity of silicon more than the standard wet chemical process used in industry. Also for the glass surface a slight reduction of reflectivity could be achieved.
P-Type µc-Si:H Based Hole Selective Fired Passivating Contacts (FPC) without Hydrogenation After Firing
Creators: name: Desthieux, A.
name: Bazer-Bachi, B.
name: Goaer, G.
name: Drahi, E.
name: Posada, J.
name: Roca I Cabarrocas, P.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 532-535
description: The Fired Passivated Contact (FPC) structure allows the integration of passivating contacts with a low thermal budget by removing the high temperature crystallisation step usually used for standard TOPCon fabrication. However, these structures usually necessitate a post-firing hydrogenation in order to maintain high passivation quality. In this study, we demonstrate the feasibility of FPC process without hydrogenation after firing. We focus on the integration of boron-doped hydrogenated microcrystalline silicon ((p) µc-Si:H) for the silicon-based layer. The passivation properties of chemical silicon oxide (SiOx)\(p) µc-Si:H\silicon nitride (SiNx:H) stacks are studied, as well as the role of SiNx:H and aluminium oxide (AlOx) to act as diffusion barriers against hydrogen exodiffusion during the firing step.
An Investigation of an Atmospheric Screen-Printable Cu Paste and Rapid Thermal Sintering Contact for Cost-Effective Silicon Solar Cell
Creators: name: Ebong, A.
name: Ren, K.
name: Huneycutt, S.
name: Dharmadasa, R.
name: Ankireddy, K.
name: Druffel, T.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 536-539
description: For a cost-effective silicon solar cell, the metallization cost can be decreased by the use of copper (Cu), whose conductivity is close to that of silver (Ag), but approximately one hundred times lower in cost. Traditionally, Cu is applied through plating, which requires additional nickel (Ni) and forming gas anneal to form nickel silicide (NiSi) for blocking the Cu diffusion into silicon (Si), one of the challenges of using Cu. However, the wet chemistry process is cumbersome and expensive, the industry is still evaluating the long term reliability of this product. Therefore, there is an urgent need for developing an atmospheric screen-printable Cu paste that mimics the usual industry practice with Ag paste. This will be advantageous to the manufacturing of high-throughput, high-efficiency Si solar cells without additional capital equipment investment and leads to cost reduction in the metallization step. Hence, the formulated screen-printable Cu paste must address the challenges of (i) Cu oxidation in the atmosphere and (ii) the fast diffusion of Cu into Si at elevated temperature. This paper reports on the atmospheric screen-printable Cu paste that has fired through the dielectric coating to form an excellent contact with the Si and has shown some promising electrical output parameters. The electrical output parameters of the cells suggest that Cu is sequestered in the reformed metal-oxides after high temperature sintering in the belt furnace at peak temperatures ranging from 590-700 oC, and did not diffuse into Si as supported by the unity or near unity ideality factor. This is great news for the solar community that a screenprintable Cu paste is printed, dried and sintered through the dielectric to contact the Si underneath in the atmosphere without shunting the junction.
P- and n-Doped Layers Optimization for Silicon Heterojunction Solar Cells in the Rear Emitter Configuration
Creators: name: Abramov, A.
name: Andronikov, D.
name: Emtsev, K.
name: Semenov, A.V.
name: Shakhray, I.
name: Terukov, E.I.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 540-541
description: Influences of the p- and n-layers thicknesses and doping gas flow on performance of SHJ solar cells are investigated. It is shown that using an amorphous n-layer allows to increase short-circuit current of HJT solar cells to 100 mA, and the average solar cell efficiency to 23.15%. The average power of the solar modules after optimization is 335 W for the smart wire solar module (glass-backsheet, 60 cells) and 395 W for the busbar solar module (glass-glass, 72 cells).
A Study on the Influence of Aluminum Oxide Layer Properties on Contact Formation
Creators: name: Gapp, B.
name: Geml, F.
name: Engelhardt, J.
name: Hahn, G.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 525-528
description: We present an investigation of the contact formation through the widely used passivation layer stack comprised of aluminum oxide (AlOx) and silicon nitride (SiNy:H). The influence of different aluminum oxide layers deposited by either atmospheric pressure chemical vapor deposition (APCVD) or atomic layer deposition (ALD) on contact formation of screen printed silver contact paste on boron emitters is shown. Excellent contact resistivities below 1 mΩcm2 are achieved for both AlOx deposition methods. For APCVD based layers, the contact resistivity is independent of the layer thickness within the investigated range of (8...25) nm. Scanning electron microscopy is used to determine and qualitatively examine silver crystallite formation beneath screen printed silver contacts.
Inflation in string theory confronts data/Les modèles d'inflation en théorie des cordes face aux observations
Creators: name: Silverstein, Eva
Publisher: name: arXiv
Year: 2015
Subjects: subject: High Energy Physics - Theory (hep-th)
subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: FOS: Physical sciences

description: Following the 2015 Planck release, we briefly comment on the status and some ongoing opportunities in the interface between inflationary cosmology, string theory, and CMB data. The constraints in the $r$-$n_s$ plane introduce a new parameter into inflationary cosmology relative to the simplest quadratic inflation model, in a direction which fits well with couplings to heavy fields as occurs in string theory. The precision of the data permits further searches for and constraints on additional model-dependent features, such as oscillatory $N$-spectra, a program requiring specific theoretically motivated shapes. Since the perturbations can easily be affected by additional sectors and couplings, null results can usefully bound such contributions. We also review the broader lessons string theory has contributed to our understanding of primordial inflation, and close with some approaches to a more complete framework. Published in a special volume of Comptes Rendus on Inflation: Theoretical and Observational Status.
description: 20 pages
Geometry, stability and thermal transport of hydrogenated graphene nanoquilts
Creators: name: Zhang, Zhongwei
name: Xie, Yuee
name: Peng, Qing
name: Chen, Yuanping
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: Geometry, stability, and thermal transport of graphene nanoquilts folded by hydrogenation are studied using molecular dynamics simulations. The hydrogenated graphene nanoquilts show increased thermodynamic stability and better transport properties than folded graphene structures without hydrogenation. For the two-fold graphene nanoquilt, both geometry and thermal conductivity are very sensitive to the adsorbed hydrogen chains, which is interpreted by the red-shift of PDOS. For the multi-fold nanoquilts, their thermal conductivities can be tuned from 100% to 15% of pristine graphene, by varying the periodic number or length. Our results demonstrated that the hydrogenated graphene nanoquilts are quite suitable to be thermal management devices.
Simultaneous Nearest Neighbor Search
Creators: name: Indyk, Piotr
name: Kleinberg, Robert
name: Mahabadi, Sepideh
name: Yuan, Yang
Publisher: name: arXiv
Year: 2016
Subjects: subject: Data Structures and Algorithms (cs.DS)
subject: Computational Geometry (cs.CG)
subject: FOS: Computer and information sciences
subject: F.2.2

description: Motivated by applications in computer vision and databases, we introduce and study the Simultaneous Nearest Neighbor Search (SNN) problem. Given a set of data points, the goal of SNN is to design a data structure that, given a collection of queries, finds a collection of close points that are compatible with each other. Formally, we are given $k$ query points $Q=q_1,\cdots,q_k$, and a compatibility graph $G$ with vertices in $Q$, and the goal is to return data points $p_1,\cdots,p_k$ that minimize (i) the weighted sum of the distances from $q_i$ to $p_i$ and (ii) the weighted sum, over all edges $(i,j)$ in the compatibility graph $G$, of the distances between $p_i$ and $p_j$. The problem has several applications, where one wants to return a set of consistent answers to multiple related queries. This generalizes well-studied computational problems, including NN, Aggregate NN and the 0-extension problem. In this paper we propose and analyze the following general two-step method for designing efficient data structures for SNN. In the first step, for each query point $q_i$ we find its (approximate) nearest neighbor point $\hat{p}_i$; this can be done efficiently using existing approximate nearest neighbor structures. In the second step, we solve an off-line optimization problem over sets $q_1,\cdots,q_k$ and $\hat{p}_1,\cdots,\hat{p}_k$; this can be done efficiently given that $k$ is much smaller than $n$. Even though $\hat{p}_1,\cdots,\hat{p}_k$ might not constitute the optimal answers to queries $q_1,\cdots,q_k$, we show that, for the unweighted case, the resulting algorithm is $O(\log k/\log \log k)$-approximation. Also, we show that the approximation factor can be in fact reduced to a constant for compatibility graphs frequently occurring in practice. Finally, we show that the "empirical approximation factor" provided by the above approach is very close to 1.
Silicon Wafers with a Thickness below 130-Micrometers in Mass Production of Heterojunction Solar Cells
Creators: name: Nyapshaev, I.
name: Emtsev, K.
name: Andronikov, D.
name: Abramov, A.
name: Ivanov, A.
name: Tarasov, V.
name: Saykin, D.
name: Dubrovskiy, A.
name: Ishmuratov, P.
name: Shakhray, I.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 529-531
description: In present work, we investigate the possibility to reduce wafer thickness to less than 130 mkm in mass production of Si-HJT cell and modules. It is shown that thinning leads to reduction of the Isc current by 0.1 A and increase of the Voc by about 2-3 mV as compared to the standard wafer thickness. This reduces the overall cell efficiency by about 0.2%abs. At the same time, on the module level, use of thinner wafers leads to power gain of about 1%. We show that that glassglass HJT modules technology are preferred over glass-backsheet when using wafers less than 130 mkm thick in terms of mechanical and climatic stability.
Front Side Optimization on Boron- and Gallium-Doped Cz-Si PERC Solar Cells Exceeding 22% Conversion Efficiency
Creators: name: Lohmüller, E.
name: Greulich, J.
name: Saint-Cast, P.
name: Lohmüller, S.
name: Schmidt, S.
name: Belledin, U.
name: Fellmeth, T.
name: Mack, S.
name: Emanuel, G.
name: Krieg, K.
name: Zimmer, M.
name: Kunert, R.
name: Zobel, F.
name: Linse, M.
name: Horzel, J.
name: Meßmer, M.
name: Wolf, A.
name: Preu, R.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 516-520
description: This work reviews on our industrial-oriented passivated emitter and rear cell (PERC) baseline process for Czochralski-grown silicon (Cz-Si) wafers at the Fraunhofer ISE PV-TEC pilot-line. We perform several front side optimizations based on homogeneous emitter doping: finger width reduction of the screen-printed silver fingers, improved silver paste, and implementation of low-temperature thermal oxidation. This yields peak energy conversion efficiencies of 22.1% for boron-doped Cz-Si from LONGi and 22.2% for gallium-doped Cz-Si from Fraunhofer CSP. We show that gallium-doped Cz-Si wafers offer an industrially feasible option to further improve PERC-type but also other solar cell concepts on p-type Cz-Si. We also demonstrate the possibility to omit regeneration procedures that are needed to suppress the boron-oxygen-related light-induced degradation effects as known for conventional borondoped Cz-Si.
PECVD Shadow Mask Deposition of Amorphous Silicon– a Shortcut to Local Passivating Contacts
Creators: name: Stöhr, M.
name: Beier, B.
name: Aprojanz, J.
name: Vogt, A.
name: Ambrosius, N.
name: Brendel, R.
name: Dullweber, T.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 521-524
description: We develop and investigate shadow masks for the local PECVD deposition of amorphous Si (a-Si) fingers to be applied as local poly-crystalline Si (poly-Si) passivating contacts in the industrial fabrication of novel solar cell concepts such as TOPCon, PERC+POLO and POLO-IBC. We first apply a nickel-based test mask with varying mask opening widths and demonstrate narrow poly-Si fingers down to 70 µm width suitable for application on the front side of solar cells. However, the aspect ratio of the finger opening width and the mask thickness is limiting the deposition rate of as-deposited a-Si fingers. Using a glass-based mask, we verify that the a-Si finger position is identical to the mask layout over the size of a M2 silicon wafer. The passivation quality of the n-type poly-Si is demonstrated on symmetrical lifetime samples using n-type Cz wafers, a thermal oxide interface, PECVD n-a-Si and a subsequent high-temperature anneal. We measure carrier lifetimes up to 7.78 ms corresponding to an implied VOC up to 738 mV.
Assessment of Expected and Perceived Service Quality in Nigerian Public Hospitals
Creators: name: Adaka, Prisca C.
Publisher: name: Stamford International University Thailand
Year: 2020
Subjects: Services
SERVQUAL
Service Quality
Service Provision
Customer Expectations
Customer Perception
Hospital
Nigeria.

description: ASEAN Journal of Management & Innovation, 7, 1, 43 - 62
CHIPS: The Cosmological HI Power Spectrum Estimator
Creators: name: Trott, Cathryn M.
name: Pindor, Bart
name: Procopio, Pietro
name: Wayth, Randall B.
name: Mitchell, Daniel A.
name: McKinley, Benjamin
name: Tingay, Steven J.
name: Barry, N.
name: Beardsley, A. P.
name: Bernardi, G.
name: Bowman, Judd D.
name: Briggs, F.
name: Cappallo, R. J.
name: Carroll, P.
name: de Oliveira-Costa, A.
name: Dillon, Joshua S.
name: Ewall-Wice, A.
name: Feng, L.
name: Greenhill, L. J.
name: Hazelton, B. J.
name: Hewitt, J. N.
name: Hurley-Walker, N.
name: Johnston-Hollitt, M.
name: Jacobs, Daniel C.
name: Kaplan, D. L.
name: Kim, HS
name: Lenc, E.
name: Line, J.
name: Loeb, A.
name: Lonsdale, C. J.
name: Morales, M. F.
name: Morgan, E.
name: Neben, A. R.
name: Thyagarajan, Nithyanandan
name: Oberoi, D.
name: Offringa, A. R.
name: Ord, S. M.
name: Paul, S.
name: Pober, J. C.
name: Prabu, T.
name: Riding, J.
name: Shankar, N. Udaya
name: Sethi, Shiv K.
name: Srivani, K. S.
name: Subrahmanyan, R.
name: Sullivan, I. S.
name: Tegmark, M.
name: Webster, R. L.
name: Williams, A.
name: Williams, C. L.
name: Wu, C.
name: Wyithe, J. S. B.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Instrumentation and Methods for Astrophysics (astro-ph.IM)
subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: FOS: Physical sciences

description: Detection of the cosmological neutral hydrogen signal from the Epoch of Reionization, and estimation of its basic physical parameters, is the principal scientific aim of many current low-frequency radio telescopes. Here we describe the Cosmological HI Power Spectrum Estimator (CHIPS), an algorithm developed and implemented with data from the Murchison Widefield Array (MWA), to compute the two-dimensional and spherically-averaged power spectrum of brightness temperature fluctuations. The principal motivations for CHIPS are the application of realistic instrumental and foreground models to form the optimal estimator, thereby maximising the likelihood of unbiased signal estimation, and allowing a full covariant understanding of the outputs. CHIPS employs an inverse-covariance weighting of the data through the maximum likelihood estimator, thereby allowing use of the full parameter space for signal estimation ("foreground suppression"). We describe the motivation for the algorithm, implementation, application to real and simulated data, and early outputs. Upon application to a set of 3 hours of data, we set a 2$σ$ upper limit on the EoR dimensionless power at $k=0.05$~h.Mpc$^{-1}$ of $Δ_k^2<7.6\times{10^4}$~mK$^2$ in the redshift range $z=[6.2-6.6]$, consistent with previous estimates.
description: 34 pages, accepted for publication in ApJ
Low-temperature Ag-Paste Screening for Silicon Heterojunction Solar Cells and Modules
Creators: name: Pingel, S.
name: Erath, D.
name: Wenzel, T.
name: Nold, S.
name: Eberlein, D.
name: De Rose, A.
name: Tepner, S.
name: Schube, J.
name: Ivanov, G.
name: Terukova, E.
name: Moldovan, A.
name: Lorenz, A.
name: Clement, F.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 508-511
description: This paper addresses the testing of eleven different low-temperature pastes (LTP) for silicon heterojunction (SHJ) solar cells. In the LTP screening different pastes from different suppliers were printed on the front side of industrial rear-emitter transparent conductive oxide TCO precursors with industry relevant screens. The pastes are compared with regard to (1) electrical properties of the grid fingers for screen openings ranging from 50 μm over 40 μm down to 30 μm and (2) the suitability for module integration which is addressed by peel tests after the soldering step and (3) performance on cell level for busbarless (0BB) and five busbar (5BB) technology as well as (4) economic factors like laydown and fast printing compatibility which affects through-put of screen printing in the production line.
Update of the flavour-physics constraints in the NMSSM
Creators: name: Domingo, Florian
Publisher: name: arXiv
Year: 2015
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: We consider the impact of several flavour-changing observables in the $B$- and the Kaon sectors on the parameter space of the NMSSM, in a minimal flavour violating version of this model. Our purpose consists in updating our previous results in arXiv:0710.3714 and designing an up-to-date flavour test for the public package NMSSMTools. We provide details concerning our implementation of the constraints in a series of brief reviews of the current status of the considered channels. Finally, we present a few consequences of these flavour constraints for the NMSSM, turning to two specific scenarios: one is characteristic of the MSSM-limit and illustrates the workings of charged-Higgs and genuinely supersymmetric contributions to flavour-changing processes; the second focus is a region where a light CP-odd Higgs is present. Strong limits are found whenever an enhancement factor - large $\tanβ$, light $H^{\pm}$, resonant pseudoscalar - comes into play.
description: 22 pages, 7 figures
D1.5 DATA MANAGEMENT PLAN M36
Creators: name: Munné, Ricard
name: Duzha, Armend
name: Baroni, Samuele
name: Yovkova, Iskra
name: Georgieva, Ana D.
name: Tarlyovska, Metodiyka
name: Blagova, Dobrinka
name: Willems, Marieke
name: Mari, Marialetizia
name: Audino, Alice
name: Bettiol, Alberto
name: Oldani, Isabella
name: Taborda Barata, Martim
name: Nikolova, Petya
name: del Hoyo, Rafael
Publisher: name: Zenodo
Year: 2022
Subjects: Policy Cloud
Data management
Data Driven

description: This deliverable is the fourth version of the Data Management Plan (DMP) for the PolicyCLOUD project, released in month 36 (December 2022). Previous versions on which this document is also based and from where the base contents have been updated are D1.2 Data Management Plan [1], D1.3 Data Management Plan M12 [2], and D1.4 Data Management M24 [3]. It provides a final description of the project’s datasets according to FAIR principles. The overall purpose of this document is to support the data management lifecycle for all data that will be collected, stored, processed or generated by the project in order to maximise its access, according to the H2020 Pilot on Open Research Data (ORDP) in which the project participates. A Data Management strategy is defined to provide the general rules and mechanisms for the access management of project data. Each dataset in the project is identified and described and information is provided on to which extent it is standard compliant, and how the FAIR principles are applied. A total of 10 datasets have been identified in this version of the deliverable, being most of them data that will be collected and processed by the three remaining pilot use cases. Other datasets are mostly stakeholders’ information and public deliverables produced within the project scope.
description: This deliverable is submitted to the EC and not yet approved.
Investigating the Effect of Interstitial Fe Impurity Contamination on n-Type Cz-Silicon Material for High Efficiency Solar Cell Processing
Creators: name: Hajjiah, A.
name: Badran, H.
name: Gordon, I.
name: Szlufcik, J.
name: Poortmans, J.
name: John, J.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 512-515
description: In this work the impact of iron contamination on n-type cz-silicon material is investigated mimicking a silicon solar cell manufacturing process flow. The Fe impurities are deposited on the wafer surface and driven in by a high temperature step providing a bulk concentration range varying from 3.5e12/cm3 to 2.7e14/cm3. Effective minority carrier lifetimes are measured and fitted to the curve derived from SRH theory. Capture cross section for interstitial Fe could be extracted to be 6.45e-17 cm/s +/- 2.23e-17 cm/s which is in good consensus with literature values. The achieved values are used in QUOKKA to perform silicon solar cell simulations. For very low bulk Fe concentrations of 2.5e12/cm3 (surface concentration of 6e10/cm2) a degradation of the solar cell efficiency of 10% relative is calculated.
Doping Variation at the TCO/a-Si(p) Hole Contact
Creators: name: Luderer, C.
name: Tutsch, L.
name: Messmer, C.
name: Hermle, M.
name: Bivour, M.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 493-496
description: Resistive losses arise at the transport barriers at the interfaces between the different semiconductor materials in the TCO/a-Si/c-Si stack and limit the power output of silicon heterojunction (SHJ) solar cells. A key element is the unisotype recombination junction at the TCO/a-Si(p) interface. We identify sufficient doping on both sides of this junction to be crucial for low contact resistance ( c). For a-Si this is achieved by using a sufficient but not too high doping gas concentration during deposition. On the TCO side high oxygen (O2) gas concentrations during deposition have to be avoided. To combine high transparency of O2-rich TCOs with low c and Rsheet of O2-poor TCOs, we utilize a TCO layer stack. We show that a low O2 content in the vicinity of the TCO/a-Si(p) interface is mandatory to provide efficient tunnelling transport and to avoid resistive losses at the TCO/a-Si(p) interface.
Technological Viability and Proof-of-Concept of Applying Low-Temperature PECVD SiNx for Inkjet-Masked Selective Emitters
Creators: name: Kafle, B.
name: Demel, K.
name: Efinger, R.
name: Hofmann, M.
name: Shepherd, W.
name: Pickrell, M.
name: Keding, R.
Publisher: name: WIP
Year: 2020
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 37th European Photovoltaic Solar Energy Conference and Exhibition; 497-503
description: One of the major barriers for the adoption of selective emitter technology is the trade-off between optimal shielding of minority carriers and increased recombination due to the laser-induced damage. One method to form defect-free self-aligned selective emitters is to use innovative inkjet materials within adapted PERC-processes, like the PECVD of silicon nitride Herein, we utilize a novel UV-Polymer ink as mask in selective etching processes for patterning silicon and, in addition, in a thermally triggered lift-off process for patterning silicon nitride, prior to a self-aligned plating step. To address the thermal stability of the UV-Polymer inks during PECVD, the deposition process needs to be developed at low temperatures. In this work, we first investigate the maximum thermal budget that can be applied on inks during the PECVD passivation process. Based upon this temperature limit, a low temperature PECVD deposition process is developed and both optical and electrical properties of the developed layers are investigated in detail. Deposition at 250°C provided adequate optical properties (n=1.99, k=0.004) and comparable passivation quality to the PERC reference layer. At the same time, 250°C is the process temperature compatible for the innovative UV-Polymer inks investigated in this work.
title: Cornely, Heinrich Joseph (Henri Joseph)
Creators: name: Anders-Malvetti, Ursula
name: Reuter, Caroline
Publisher: name: Melusina Press
Year: 2021
Subjects: subject: Komponist, Organist, Cellist, Kapellmeister, Schriftsetzer, Mann, nebenberuflich, Musikschuldirektor

description: Luxemburger Musiklexikon - Band 1
Spiral-driven accretion in protoplanetary discs - II Self-similar solutions
Creators: name: Hennebelle, Patrick
name: Lesur, Geoffroy
name: Fromang, Sébastien
Publisher: name: arXiv
Year: 2016
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: FOS: Physical sciences

description: Accretion discs are ubiquitous in the universe and it is a crucial issue to understand how angular momentum and mass are being radially transported in these objects. Here, we study the role played by non-linear spiral patterns within hydrodynamical and non self-gravitating accretion disc assuming that external disturbances such as infall onto the disc may trigger them. To do so, we computed self-similar solutions that describe discs in which a spiral wave propagates. Such solutions present both shocks and critical sonic points that we carefully analyze. For all allowed temperatures and for several spiral shocks, we calculated the wave structure. In particular we inferred the angle of the spiral patern, the stress it exerts on the disc as well as the associated flux of mass and angular momentum as a function of temperature. We quantified the rate of angular momentum transport by means of the dimensionless $α$ parameter. For the thickest disc we considered (corresponding to $h/r$ values of about 1/3), we found values of $α$ as high as $0.1$, and scaling with the temperature $T$ such that $α\propto T^{3/2} \propto (h/r)^3$. The spiral angle scales with the temperature as $\arctan(r/h)$. The existence of these solutions suggests that perturbations occurring at disc outer boundaries, such as for example perturbations due to infall motions, can propagate deep inside the disc and therefore should not be ignored, even when considering small radii.
description: accepted for publication in A&A
D6.8: Recommendations to operate shallow coastal float in European Marginal Seas
Creators: name: Notarstefano, Giulio
name: Kassis, Dimitris
name: Palazov, Atanas
name: Slabakova, Violeta
name: Tuomi, Laura
name: Siiriä, Simo-Matti
name: Merchel, Małgorzata
name: Walczowski, Waldemar
name: Allen, John
name: Díaz-Barroso, Lara
name: Gallo, Antonella
name: Pacciaroni, Massimo
name: Taillandier, Vincent
Publisher: name: Zenodo
Year: 2022

description: Report that provides a final and detailed description of the Argo float operations in shallow areas of the European Marginal Seas, the associated technical aspects and recommendations for float activities in these areas.
Type Theory based on Dependent Inductive and Coinductive Types
Creators: name: Basold, Henning
name: Geuvers, Herman
Publisher: name: arXiv
Year: 2016
Subjects: subject: Logic in Computer Science (cs.LO)
subject: FOS: Computer and information sciences

description: We develop a dependent type theory that is based purely on inductive and coinductive types, and the corresponding recursion and corecursion principles. This results in a type theory with a small set of rules, while still being fairly expressive. For example, all well-known basic types and type formers that are needed for using this type theory as a logic are definable: propositional connectives, like falsity, conjunction, disjunction, and function space, dependent function space, existential quantification, equality, natural numbers, vectors etc. The reduction relation on terms consists solely of a rule for recursion and a rule for corecursion. The reduction relations for well-known types arise from that. To further support the introduction of this new type theory, we also prove fundamental properties of its term calculus. Most importantly, we prove subject reduction and strong normalisation of the reduction relation, which gives computational meaning to the terms. The presented type theory is based on ideas from categorical logic that have been investigated before by the first author, and it extends Hagino's categorical data types to a dependently typed setting. By basing the type theory on concepts from category theory we maintain the duality between inductive and coinductive types, and it allows us to describe, for example, the function space as a coinductive type.
description: 10 pages as to appear with small changes at LICS 2016 + 5 pages of examples and proofs