title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ¿ÐµÐºÑÑÐ¾Ð² ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð½Ð¸ÑÐµÐ²Ð¸Ð´Ð½ÑÑ Ð½Ð°Ð½Ð¾ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² InAs(P, N)/Si
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Investigation of photoluminescence spectra of InAs (P, N)/Si nanowires
Creators: name: ÐÐ°ÑÐ°ÑÐ»Ð¾Ð², ÐÐ°Ð½Ð¸Ð»Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð½Ð¸ÑÐµÐ²Ð¸Ð´Ð½ÑÐµ Ð½Ð°Ð½Ð¾ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ñ
ÑÑÐ°Ð»ÐµÑÐ¸Ñ
Ð²ÑÑÑÐ¸Ñ
ÑÐ¿ÐµÐºÑÑÑ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸
Ð¿Ð°ÑÑÐ¸Ð²Ð°ÑÐ¸Ñ
Ð°Ð·Ð¾Ñ
nanowires
zinc blende
wurtzite
photoluminescence spectra
passivation
nitrogen

description: ÐÐ±ÑÐµÐºÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ â Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÐµ Ð½Ð¸ÑÐµÐ²Ð¸Ð´Ð½ÑÐµ Ð½Ð°Ð½Ð¾ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ñ (ÐÐÐ) Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÐ¾ÐµÐ´Ð¸Ð½ÐµÐ½Ð¸Ñ InAs. Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð¿Ð°ÑÑÐ¸Ð²Ð°ÑÐ¸Ð¸ ÑÐ»Ð¾ÐµÐ¼ InP Ð¸ Ð²Ð½ÐµÐ´ÑÐµÐ½Ð¸Ñ Ð°Ð·Ð¾ÑÐ° Ð½Ð° Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÐÐÐ InAs. ÐÐ¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÐµ ÐÐÐ InAs Ð¸Ð¼ÐµÑÑ Ð±Ð¾Ð»ÑÑÐ¸Ðµ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ñ Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ Ð¿Ð»Ð°ÑÑÐ¾ÑÐ¼Ñ Ð´Ð»Ñ ÑÐ¸ÑÐ¾ÐºÐ¾ Ð¿ÐµÑÐµÑÑÑÐ°Ð¸Ð²Ð°ÐµÐ¼ÑÑ ÑÑÑÐµÐºÑÐ¸Ð²Ð½ÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÑ ÑÑÑÑÐ¾Ð¹ÑÑÐ², ÑÐ°Ð±Ð¾ÑÐ°ÑÑÐ¸Ñ Ð² Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½Ð¾Ð¼ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐ¿ÐµÐºÑÑÐ°. ÐÐ»Ð°Ð³Ð¾Ð´Ð°ÑÑ Ð¼Ð°Ð»ÑÐ¼ ÑÐ°Ð·Ð¼ÐµÑÐ°Ð¼ Ð¸ Ð¼Ð°Ð»Ð¾Ð¹ Ð¿Ð»Ð¾ÑÐ°Ð´Ð¸ ÐºÐ¾Ð½ÑÐ°ÐºÑÐ° Ñ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¾Ð¹ ÐÐÐ Ð¾Ð±Ð»Ð°Ð´Ð°ÑÑ Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½ÑÐ¼Ð¸ Ð¿ÑÐµÐ¸Ð¼ÑÑÐµÑÑÐ²Ð°Ð¼Ð¸ Ð¿Ð¾ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ñ Ñ ÑÐ¾Ð½ÐºÐ¸Ð¼Ð¸ Ð¿Ð»ÐµÐ½ÐºÐ°Ð¼Ð¸, ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ Ð¸ Ð¾Ð±ÑÐµÐ¼Ð½ÑÐ¼Ð¸ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð°Ð¼Ð¸. ÐÐ°ÑÑÐ¸Ð²Ð°ÑÐ¸Ñ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð±Ð¾Ð»ÐµÐµ ÑÐ¸ÑÐ¾ÐºÐ¾Ð·Ð¾Ð½Ð½ÑÐ¼ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð¼ ÑÐ»ÑÑÑÐ°ÐµÑ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð°, ÑÐ±Ð¸ÑÐ°Ñ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½ÑÑ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ð¹, ÐºÐ¾ÑÐ¾ÑÑÐµ Ð¾ÐºÐ°Ð·ÑÐ²Ð°ÑÑ Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾Ðµ Ð²Ð»Ð¸ÑÐ½Ðµ Ð²ÑÐ»ÐµÐ´ÑÑÐ²Ð¸Ðµ Ð±Ð¾Ð»ÑÑÐ¾Ð³Ð¾ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸Ñ Ð¿Ð»Ð¾ÑÐ°Ð´Ð¸ Ðº Ð¾Ð±ÑÑÐ¼Ñ ÐÐÐ. ÐÐµÑÐ°Ð½Ð¸ÑÐµÑÐºÐ¸Ðµ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ñ ÑÑÑÑÐºÑÑÑÑ ÑÐ´ÑÐ¾ / Ð¾Ð±Ð¾Ð»Ð¾ÑÐºÐ°, Ð²ÑÐ·Ð²Ð°Ð½Ð½ÑÐµ Ð½ÐµÑÐ¾Ð¾ÑÐ²ÐµÑÑÑÐ²Ð¸ÐµÐ¼ ÑÐµÑÑÑÐ¾Ðº, Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÐµÑ ÑÐ¿ÑÐ°Ð²Ð»ÑÑÑ ÑÐ¸ÑÐ¸Ð½Ð¾Ð¹ Ð·Ð°Ð¿ÑÐµÑÑÐ½Ð½Ð¾Ð¹ Ð·Ð¾Ð½Ñ. ÐÑÐ¾Ð¼Ðµ ÑÐ¾Ð³Ð¾, Ð²Ð½ÐµÐ´ÑÐµÐ½Ð¸Ðµ Ð¼Ð°Ð»Ð¾Ð¹ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ð¸ Ð°Ð·Ð¾ÑÐ° Ð² ÑÑÑÑÐºÑÑÑÑ Ð¾Ð±ÑÑÐ¼Ð½Ð¾Ð³Ð¾ InAs Ð¾ÐºÐ°Ð·ÑÐ²Ð°ÐµÑ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð½Ð° Ð·Ð¾Ð½Ð½ÑÑ ÑÑÑÑÐºÑÑÑÑ, Ð¾Ð´Ð½Ð°ÐºÐ¾ Ð¿Ð¾Ð´Ð¾Ð±Ð½Ð¾Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð½Ð° Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÐÐÐ ÑÐ²ÐµÑÐ´Ð¾Ð³Ð¾ ÑÐ°ÑÑÐ²Ð¾ÑÐ° InNAs ÐºÑÐ°Ð¹Ð½Ðµ ÑÐ»Ð°Ð±Ð¾ Ð¸Ð·ÑÑÐµÐ½Ð¾. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð±ÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÑÐ¿ÐµÐºÑÑÑ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ (Ð¤Ð), Ð¸Ð¼ÐµÑÑÐ¸Ðµ 2 Ð¿Ð¸ÐºÐ° ÑÑÑÑÐºÑÑÑÑ ÑÑÐ°Ð»ÐµÑÐ¸Ñ Ð¸ Ð¿Ð¾Ð»Ð¸ÑÐ¸Ð¿Ð° Ñ Ð¿ÑÐµÐ¾Ð±Ð»Ð°Ð´Ð°Ð½Ð¸ÐµÐ¼ Ð³ÐµÐºÑÐ°Ð³Ð¾Ð½Ð°Ð»ÑÐ½Ð¾Ð¹ ÑÐ°Ð·Ñ. ÐÐ°ÑÑÐ¸Ð²Ð°ÑÐ¸Ñ ÑÑÐ¿ÐµÑÐ½Ð¾ ÑÑÑÑÐ°Ð½ÑÐµÑ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½ÑÐµ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ñ Ð¸ Ð¾ÐºÐ°Ð·ÑÐ²Ð°ÐµÑ Ð´ÐµÑÐ¾ÑÐ¼Ð°ÑÐ¸Ð¸ ÑÐ¶Ð°ÑÐ¸Ñ Ð½Ð° ÑÐµÑÐ´ÑÐµÐ²Ð¸Ð½Ñ ÐÐÐ, ÑÑÐ¾ Ð¿ÑÐ¸Ð²Ð¾Ð´Ð¸Ñ Ðº ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ñ Ð·Ð½Ð°ÑÐµÐ½Ð¸Ñ Ð·Ð°Ð¿ÑÐµÑÐµÐ½Ð½Ð¾Ð¹ Ð·Ð¾Ð½Ñ. Ð¡Ð¿ÐµÐºÑÑÑ Ð¤Ð Ð¾Ñ Ð¼Ð°ÑÑÐ¸Ð²Ð° ÐÐÐ InNAs Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ ÑÐ¼ÐµÑÐµÐ½Ñ Ð² Ð¾Ð±Ð»Ð°ÑÑÑ Ð½Ð¸Ð·ÐºÐ¸Ñ ÑÐ½ÐµÑÐ³Ð¸Ð¹ Ð¾ÑÐ½Ð¾ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ ÑÐ¸ÑÑÑÑ ÐÐÐ InAs, ÑÑÐ¾ Ð³Ð¾Ð²Ð¾ÑÐ¸Ñ Ð¾ Ð²ÑÑÑÐ°Ð¸Ð²Ð°Ð½Ð¸Ð¸ Ð°Ð·Ð¾ÑÐ° Ð² ÑÐµÑÐµÑÐºÑ ÐÐÐ Ð¸ ÐµÐ³Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ð¸ Ð½Ð° Ð·Ð¾Ð½Ð½ÑÑ ÑÑÑÑÐºÑÑÑÑ. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½ Ð¿Ð¾Ð¸ÑÐº Ð¸Ð½ÑÐ¾ÑÐ¼Ð°ÑÐ¸Ð¸ Ð² Ð³Ð»Ð¾Ð±Ð°Ð»ÑÐ½ÑÑ ÐºÐ¾Ð¼Ð¿ÑÑÑÐµÑÐ½ÑÑ ÑÐµÑÑÑ Google Scholar.
description: The subject of the graduate qualification work is semiconductor nanowires based on the A3B5 InAs. The given work is devoted to study of the effect of InP passivation and nitrogen incorporation on the optical properties of InAs nanowires. InAs semiconductor nanowires have great prospects as a platform for widely tunable efficient electronic devices operating in the infrared spectrum. Due to their small size and small contact area with the substrate nanowires have significant advantages over thin films, quantum wells, and bulk materials. Passivation of the surface by a broader-gap semiconductor improves optical properties by removing the influence of surface states, which have a significant impact due to the large area to volume ratio of nanowires. The mechanical strain of the core / shell structure caused by the lattice mismatch control the bandgap width. In addition, it is known that the introduction of a small concentration of nitrogen into the bulk InAs structure affects the band structure, but such an effect on the optical properties of the nanowires solid solution InNAs is extremely poorly studied. As a result of the study photoluminescence (PL) spectra were obtained, which consist of 2 peaks zinc blende structure and polytype with predominance of hexagonal phase. Passivation successfully removes the surface states and produces a compression strain on the nanowires core, which leads to an increase in the value of the band gap. Also, the PL spectra of InNAs were obtained. Pl peaks are significantly shifted to the low energy region relative to pure InAs nanowires, which indicate the incorporation of nitrogen into the InAs lattice and its influence on the band structure. The information was searched in the global computer networks Google Scholar.