title: ÐÐ°ÐºÐ¾Ð¿Ð»ÐµÐ½Ð¸Ðµ ÑÐ°Ð´Ð¸Ð°ÑÐ¸Ð¾Ð½Ð½ÑÑ Ð¿Ð¾Ð²ÑÐµÐ¶Ð´ÐµÐ½Ð¸Ð¹ Ð¸ Ð´ÐµÐ³ÑÐ°Ð´Ð°ÑÐ¸Ñ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ GaN Ð¿ÑÐ¸ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¸ ÑÑÐºÐ¾ÑÐµÐ½Ð½ÑÐ¼Ð¸ Ð¸Ð¾Ð½Ð°Ð¼Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Accumulation of radiation damage and conductivity degradation of GaN during ion irradiation
Creators: name: Ð¡ÑÑÑÑÐºÐ¾Ð², ÐÐ½Ð´ÑÐµÐ¹
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2019
Subjects: ÐÐ°Ð»Ð»Ð¸Ð¹, Ð½Ð¸ÑÑÐ¸Ð´Ñ
ÐÐ¾Ð½Ð¸Ð·Ð¸ÑÑÑÑÐ¸Ðµ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ
Ð¸Ð¾Ð½Ð½Ð°Ñ Ð¸Ð¼Ð¿Ð»Ð°Ð½ÑÐ°ÑÐ¸Ñ
ÑÐ°Ð´Ð¸Ð°ÑÐ¸Ð¾Ð½Ð½ÑÐµ Ð¿Ð¾Ð²ÑÐµÐ¶Ð´ÐµÐ½Ð¸Ñ
Ð¸Ð½Ð¶ÐµÐ½ÐµÑÐ¸Ñ Ð´ÐµÑÐµÐºÑÐ¾Ð²
Ð´ÐµÐ³ÑÐ°Ð´Ð°ÑÐ¸Ñ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸
Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¸Ðµ ÑÑÑÐµÐºÑÑ
ÐºÐ¾Ð¼Ð±Ð¸Ð½Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ðµ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ðµ

description: Ð Ð°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿ÑÐ¸Ð½ÑÐ¸Ð¿Ð¾Ð² Ð½Ð°ÐºÐ¾Ð¿Ð»ÐµÐ½Ð¸Ñ Ð´ÐµÑÐµÐºÑÐ¾Ð² Ð² ÑÐµÑÐµÑÐºÐµ Ð½Ð¸ÑÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ð¿ÑÐ¸ Ð²Ð¾Ð·Ð´ÐµÐ¹ÑÑÐ²Ð¸Ð¸ Ð¸Ð¾Ð½Ð½ÑÑ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¹ Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÐ¼Ð¸ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ°Ð¼Ð¸. Ð Ð°ÑÑÐ¼Ð¾ÑÑÐµÐ½ Ð¿ÑÐ¾ÑÐµÑÑ Ð´ÐµÐ³ÑÐ°Ð´Ð°ÑÐ¸Ð¸ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÑ ÑÐ»Ð¾ÐµÐ² GaN Ð¿ÑÐ¸ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¸ Ð¸Ð¾Ð½Ð°Ð¼Ð¸ Au, Ag, Ni Ñ ÑÐ½ÐµÑÐ³Ð¸ÑÐ¼Ð¸ ~ 100 ÐÑÐ, Ð²ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ð¾ Ð¼Ð°ÑÐµÐ¼Ð°ÑÐ¸ÑÐµÑÐºÐ¾Ðµ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ Ð´Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¿ÑÐ¾ÑÐµÑÑÐ°, Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÐµÐ³Ð¾ ÑÐ´ÐµÐ»Ð°Ð½ Ð²ÑÐ²Ð¾Ð´ Ð¾ Ð²ÐºÐ»Ð°Ð´Ðµ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÑ Ð¸ ÑÐ´ÐµÑÐ½ÑÑ Ð¿Ð¾ÑÐµÑÑ ÑÐ½ÐµÑÐ³Ð¸Ð¸ Ð¸Ð¾Ð½Ð¾Ð² Ð² ÑÐ²Ð»ÐµÐ½Ð¸Ðµ ÑÐ¾ÑÑÐ° ÑÐ¾Ð¿ÑÐ¾ÑÐ¸Ð²Ð»ÐµÐ½Ð¸Ñ. ÐÑÐ¾Ð¸Ð·Ð²ÐµÐ´ÐµÐ½Ð¾ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ Ð½Ð°ÐºÐ¾Ð¿Ð»ÐµÐ½Ð¸Ñ ÑÑÑÐ¾Ð¹ÑÐ¸Ð²ÑÑ ÑÑÑÑÐºÑÑÑÐ½ÑÑ Ð¿Ð¾Ð²ÑÐµÐ¶Ð´ÐµÐ½Ð¸Ð¹ Ð¿ÑÐ¸ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¸ Ð¸Ð¾Ð½Ð°Ð¼Ð¸ Ne Ð¸ F Ñ ÑÐ½ÐµÑÐ³Ð¸ÑÐ¼Ð¸ 1.3 Ð¸ 3.2 ÐºÑÐ/Ð°.Ðµ.Ð¼. Ñ ÑÐµÐ»ÑÑ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ ÑÐ¾Ð»Ð¸ ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¸Ñ ÑÑÑÐµÐºÑÐ¾Ð² Ð¿ÑÐ¸ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¸ Ð¸Ð¾Ð½Ð°Ð¼Ð¸ ÑÑÐ¾ÑÐ°. ÐÐ·ÑÑÐµÐ½ Ð¿ÑÐ¾ÑÐµÑÑ Ð¿Ð¾ÑÐ»ÐµÐ´Ð¾Ð²Ð°ÑÐµÐ»ÑÐ½Ð¾Ð³Ð¾ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ñ GaN Ð¸Ð¾Ð½Ð°Ð¼Ð¸ F ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÐ½ÐµÑÐ³Ð¸Ð¹, Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð° Ð½ÐµÐºÐ¾Ð¼Ð¼ÑÑÐ°ÑÐ¸Ð²Ð½Ð¾ÑÑÑ ÑÐ°ÐºÐ¾Ð³Ð¾ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ñ, ÑÐ´ÐµÐ»Ð°Ð½ Ð²ÑÐ²Ð¾Ð´ Ð¾ ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¾Ð¼ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼Ðµ Ð¾Ð±ÑÐ°Ð·Ð¾Ð²Ð°Ð½Ð¸Ñ Ð½Ð°ÑÑÑÐµÐ½Ð¸Ñ ÑÑÐ¾Ð²Ð½Ñ ÑÐ°Ð·ÑÐ¿Ð¾ÑÑÐ´Ð¾ÑÐµÐ½Ð¸Ñ Ð² Ð¾Ð±ÑÐµÐ¼Ð½Ð¾Ð¼ Ð¼Ð°ÐºÑÐ¸Ð¼ÑÐ¼Ðµ Ð´ÐµÑÐµÐºÑÐ¾Ð² Ð¿ÑÐ¸ Ð¾Ð±Ð»ÑÑÐµÐ½Ð¸Ð¸ GaN Ð»ÐµÐ³ÐºÐ¸Ð¼Ð¸ Ð¸Ð¾Ð½Ð°Ð¼Ð¸.
description: The work contains a study of physical principles of radiation damage accumulation in GaN under ion irradiation with various parameters. The electrical conductivity degradation of epitaxial GaN layers is studied after irradiation of Au, Ag, Ni ions with ~ 100 MeV energies, and this process is mathematically modelled. The conclusion is made about the contribution of electron and nuclear ion energy losses to the resistance increase. Stable damage accumulation is compared for Ne and F ions irradiation with 1.3 keV/amu and 3.2 keV/amu energies. The combined irradiation of F ions with different energies is studied. Such process is shown to be noncommutative, and the physical mechanism of disorder level saturation in bulk defect maximum during light ion irradiation of GaN is discussed.