title: ÐÐ¾Ð½ÑÑÐ¾Ð»Ñ ÐºÐ°ÑÐµÑÑÐ²Ð° Ð´Ð¸Ð¾Ð´Ð½Ð¾Ð¹ ÑÐµÑÐºÐ¸ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾Ð¹ Ð¿Ð»Ð°ÑÑÐ¸Ð½Ñ Ð´Ð»Ñ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð² Ð½Ð¾ÑÐ½Ð¾Ð³Ð¾ Ð²Ð¸Ð´ÐµÐ½Ð¸Ñ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Quality control of silicon wafer diode grid for night-vision devices
Creators: name: Ð¡Ð¾ÐºÐ¾Ð»Ð¾Ð²Ð°, ÐÐ½Ð°ÑÑÐ°ÑÐ¸Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð»Ð°Ð·ÐµÑÐ½Ð¾Ðµ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ðµ
Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½ÑÐ¹ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½
Ð´Ð¸Ð¾Ð´Ð½Ð°Ñ ÑÐµÑÐºÐ°
Ð¼Ð¸ÑÐµÐ½Ñ
ÐºÐ¾Ð½ÑÑÐ¾Ð»Ñ
ÐºÐ°ÑÐµÑÑÐ²Ð¾ Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ¸
ÑÐ¾ÑÐ¾ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½Ð¾ÑÑÑ
laser radiation
infrared range
diode grid
target
control
surface quality
photosensitivity

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description: The object of study is a silicon photodiode plate. The aim of this work is to develop a comprehensive method for quality control of the diode grid of a silicon target and to modernize the experimental setup for its implementation. During this study, several problems that arise when identifying objects in conditions of poor visibility were considered, methods for controlling the quality of silicon wafers used in night vision devices were studied in detail. The necessity of improving the technical characteristics of night vision devices with siliconâbased photodetectors with a shifted red border to the nearâIR range is substantiated. As a result, a comprehensive method for quality control of the diode grid of silicon wafers was obtained, implemented on the proposed experimental stand. This development is relevant both for improving the performance of night vision devices and for military facilities. Open educational resources and programs for searching and analyzing information were used. Computer programs for calculating the characteristics of silicon photographic wafers, such as the Matlab package, were used as development automation tools.