title: ÐÐ»Ð¸Ð½Ð½Ð¾Ð²Ð¾Ð»Ð½Ð¾Ð²ÑÐµ ÑÐ¾ÑÐ¾Ð¿ÑÐ¸ÐµÐ¼Ð½Ð¸ÐºÐ¸ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÐ²ÐµÑÐ´ÑÑ ÑÐ°ÑÑÐ²Ð¾ÑÐ¾Ð² InAsSb
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Longwave inrfared photodetectors based on InAsSb solid solutions
Creators: name: ÐÑÐ½ÐºÐ¾Ð², Ð Ð¾Ð¼Ð°Ð½
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð Ð°ÑÑÐ²Ð¾ÑÑ ÑÐ²ÐµÑÐ´ÑÐµ
ÐÑÐ¸ÐµÐ¼Ð½Ð¸ÐºÐ¸ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ
Ð¡Ð¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½Ð°Ñ
ÑÐ¸ÑÐ¸Ð½Ð° Ð·Ð°Ð¿ÑÐµÑÐµÐ½Ð½Ð¾Ð¹ Ð·Ð¾Ð½Ñ InAsSb
Energy Gap InAsSb

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÑ p-n Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ Ð¸ ÑÐ¾ÑÐ¾Ð´Ð¸Ð¾Ð´Ð¾Ð² Ñ Ð¿Ð¾Ð³Ð»Ð¾ÑÐ°ÑÑÐ¸Ð¼ ÑÐ»Ð¾ÐµÐ¼ Ð¸Ð· InAs1-xSbx (Ñ ÑÐ¾Ð´ÐµÑÐ¶Ð°Ð½Ð¸ÐµÐ¼ ÑÑÑÑÐ¼Ñ 35 â 45 %), Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÑ Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ n-InAs (100) (n = 2â¢10 Â¹â¶ cm â»Â³) Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð¶Ð¸Ð´ÐºÐ¾ÑÐ°Ð·Ð½Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸, ÑÐ°Ð±Ð¾ÑÐ°ÑÑÐ¸Ñ Ð² Ð¸Ð½ÑÐµÑÐ²Ð°Ð»Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ 77 - 300 Ð Ð¸ Ð¾Ð±Ð»Ð°Ð´Ð°ÑÑÐ¸Ñ Ð¼Ð°ÐºÑÐ¸Ð¼ÑÐ¼Ð°Ð¼Ð¸ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð¾Ð¹ ÑÐ¾ÑÐ¾ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½Ð¾ÑÑÐ¸ Ð¾ÐºÐ¾Ð»Ð¾ 8 Ð¼ÐºÐ¼ Ð¸ Ð´Ð»Ð¸Ð½Ð½Ð¾Ð²Ð¾Ð»Ð½Ð¾Ð²ÑÐ¼Ð¸ Ð³ÑÐ°Ð½Ð¸ÑÐ°Ð¼Ð¸ Î»0.1 Ð¾ÐºÐ¾Ð»Ð¾ 9.5, 10.5 Ð¸ 11.5 Ð¼ÐºÐ¼ ÑÐ¾Ð¾ÑÐ²ÐµÑÑÑÐ²ÐµÐ½Ð½Ð¾ Ð¿ÑÐ¸ ÐºÐ¾Ð¼Ð½Ð°ÑÐ½Ð¾Ð¹ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐµ. Ð ÑÐ¾Ð´Ðµ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ Ð¿ÑÐ¾Ð°Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ñ Ð²Ð¾Ð»ÑÑ-Ð°Ð¼Ð¿ÐµÑÐ½ÑÐµ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸, ÑÐ¿ÐµÐºÑÑÑ ÑÐ¾ÑÐ¾Ð¾ÑÐ²ÐµÑÐ° Ð¸ ÑÐ»ÐµÐºÑÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÑ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ 80 â 300 K. ÐÐ¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÐµ Ð¾Ð±ÑÐ°Ð·ÑÑ ÑÐ¾ÑÐ¾Ð´ÐµÑÐµÐºÑÐ¾ÑÐ¾Ð² ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸Ð·ÑÑÑÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²Ð¾Ð¹ ÑÑÑÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑÑ, QE â¥ 0.23 Ð¿ÑÐ¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐµ 150 Ð Ð¸ Ð´Ð¸ÑÑÑÐ·Ð¸Ð¾Ð½Ð½ÑÐ¼ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼Ð¾Ð¼ ÑÐ¾ÐºÐ¾Ð¿ÑÐ¾ÑÐµÐºÐ°Ð½Ð¸Ñ Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ 200 â 300 Ð. ÐÐµÑÐµÐºÑÐ¸ÑÑÑÑÐ¸Ðµ ÑÐ¿Ð¾ÑÐ¾Ð±Ð½Ð¾ÑÑÐ¸ Ð² Ð¼Ð°ÐºÑÐ¸Ð¼ÑÐ¼Ðµ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð¾Ð¹ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÑÑ Ð½Ðµ Ð¼ÐµÐ½ÐµÐµ D*8 Âµm = 8Ð8 Ð¸ D*5.5 Âµm = 1ÐÂ¹â° ÑÐ¼ÐÑÂ¹/Â²ÐÑâ»Â¹ Ð´Ð»Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ 300 Ð¸ 150 Ð ÑÐ¾Ð¾ÑÐ²ÐµÑÑÑÐ²ÐµÐ½Ð½Ð¾. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÑÑ Ð¿ÑÐ¸Ð¼ÐµÐ½ÑÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð½ÑÐµ ÑÐ¾ÑÐ¾Ð´ÐµÑÐµÐºÑÐ¾ÑÑ Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ ÑÐ¾ÑÐ¾ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½ÑÑ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½ÑÐ¾Ð² ÑÐ¾ÑÐ¾Ð¿ÑÐ¸ÐµÐ¼Ð½ÑÑ ÑÑÑÑÐ¾Ð¹ÑÑÐ² Ð´Ð»Ñ Ð³Ð°Ð·Ð¾Ð²Ð¾Ð³Ð¾ Ð°Ð½Ð°Ð»Ð¸Ð·Ð°, ÑÐ¸ÑÑÐµÐ¼ Ð´Ð¸ÑÑÐ°Ð½ÑÐ¸Ð¾Ð½Ð½Ð¾Ð³Ð¾ Ð·Ð¾Ð½Ð´Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÐÐµÐ¼Ð»Ð¸, Ð½Ð¸Ð·ÐºÐ¾ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð¹ Ð¿Ð¸ÑÐ¾Ð¼ÐµÑÑÐ¸Ð¸, ÑÐ¸ÑÑÐµÐ¼ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð´Ð»Ð¸Ð½Ð½Ð¾Ð²Ð¾Ð»Ð½Ð¾Ð²ÑÑ Ð»Ð°Ð·ÐµÑÐ¾Ð².
description: This work is devoted to the results of studying epitaxial p-n heterostructures and photodiodes with an absorbing InAs1-xSbx layer (with antimony con-tent 35 â 45 %) grown on an n-InAs (100) substrate (n = 2 Ã 10Â¹â¶ cmâ»Â³) by liquid-phase epitaxy method, operating in the temperature range 77 â 350 K and having spectral photosensitivity maxima of about 8 Î¼m and cut-off wavelength Î»0.1 around 9.5, 10.5, and 11.5 Î¼m, respectively, at room temperature. In the course of the work, the current-voltage characteristics, photore-sponse and electroluminescence spectra of the obtained experimental samples were analyzed in the temperature range 80 â 300 K. It is shown that experimental samples of photodetectors are characterized by a quantum efficiency equal to at least 0.23 at a temperature of 150 K and a diffusion mechanism of current flow in the temperature range of 200 â 300 K. The detecting capacities at the maximum have a value of at least D*8 Âµm = 8E8 and D*5.5 Âµm = 1EÂ¹â° cmHzÂ¹/Â²Wâ»Â¹for temperatures of 300 and 150 K, respectively. The results obtained make it possible to potentially use the investigated photodiodes as photosensitive components of photodetectors for systems for studying long-wave lasers, gas analysis, Earth remote sensing systems, low-temperature pyrometry.