cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Micro-Structural and Electrical Properties of Polycrystalline Silicon Thin-Film Solar Cells on Glass Obtained by Solid-Phase and Laser Crystallisation
Creators: name: Huang, J.
name: Dore, J.
name: Yun, J.S.
name: Evans, R.
name: Egan, R.
name: Varlamov, S.
name: Green, M.A.
Publisher: name: WIP
Year: 2013
Subjects: THIN FILM SOLAR CELLS
Silicon-based Thin Film Solar Cells

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2222-2224
description: Thin-film crystalline silicon materials on glass substrate are promising candidates for low cost photovoltaics
compared to standard, wafer-based photovoltaics. In this work, the micro-structural and electrical properties of
polycrystalline-Si (poly-Si) thin-film solar cells on glass are investigated by different techniques. The poly-Si films are
obtained by either solid-phase crystallisation (SPC) or laser-induced liquid-phase crystallisation (LC) and a comparison
between the two methods is also presented. The results show that laser-crystallised poly-Si cells have a significantly lower
defect density and better electrical properties than SPC poly-Si cells.
Micrometer Mapping of Quasi-Fermi Level Splitting and Collection Efficiency
Creators: name: Delamarre, A.
name: Lombez, L.
name: Paire, M.
name: Guillemoles, J.F.
Publisher: name: WIP
Year: 2013
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2203-2204
description: CIGS is currently the subject of numerous studies, having shown high efficiencies both in laboratories
and in the industry. This material is polycrystalline, and presents strong spatial property fluctuations. It is admitted
that these fluctuations impact the global parameters of the cell, either positively or negatively. To better understand
the underlying mechanisms, our objective is to experimentally probe the optoelectronic fluctuations at the micrometer
scale. To this purpose the photoluminescence spectra of the cell will be studied, since it contains various information
and can be spatially resolved. For its recording, we will use a Hyperspectral Imager, which provides spectrally
resolved images, with spatial resolution of 2 μm and spectral resolution of 2 nm. The sample emission can be
described with the generalized Planck’s law, from which the quasi-Fermi level splitting can be determined. The
observed values are in good agreement with the simultaneously measured open-circuit voltage. Spatial fluctuations in
the order of 40 meV are found.
New Insights on the Understanding of Cu(In,Ga)Se2 /CBD-ZnS/ Windows Interfaces for High Efficiencies Solar Cells Using Advanced Composition Profiling Techniques
Creators: name: Hildebrandt, T.
name: Olivero, C.
name: Chapon, P.
name: Bouttemy, M.
name: Vigneron, J.
name: Etcheberry, A.
name: Lincot, D.
name: Naghavi, N.
Publisher: name: WIP
Year: 2013
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2210-2212
description: The purpose of the present paper is to focus on the better understanding of the impact of oxygen gas
partial pressure during i-ZnO and ZnMgO sputtering on the transient behavior of solar cell parameters and to improve
the understanding of the influence of the deposition conditions of both CBD-ZnS buffer and sputtered window layer,
i.e. a better understanding of different interface formations in these cells, using advanced composition profiling
techniques such as glow discharge optical emission spectrometry (GD-OES). In this work we have identified the role
of oxygen during the deposition of ZnMgO or i-ZnO windows layers to highly improve the efficiency of solar cells
and strongly reduce their transient behavior. Based on these studies, it appeared that the use of a CBD-ZnS buffer
layer leads to the migration of Na inside the ZnS buffer layer. Such phenomenon does not so much occur in case of a
CdS buffer layer, and may have a great influence on the final properties of the cell.
Effects of CdCl2 Treatment on Ultra-Thin MOCVD-CdTe Solar Cells
Creators: name: Clayton, A.J.
name: Babar, S.
name: Baker, M.A.
name: Kartopu, G.
name: Lamb, D.A.
name: Barrioz, V.
name: Irvine, S.J.C.
Publisher: name: WIP
Year: 2013
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2148-2151
description: Ultra-thin CdTe PV solar cells with an absorber thickness of 0.5 μm were produced by APMOCVD
on to aluminosilicate/ITO substrates. A wide band gap Cd1-xZnxS window layer was utilised to improve
spectral response in the blue region of the solar spectrum. XPS was used to characterise the Cd1-xZnxS window
layer composition after varying degrees of Cl activation treatments and it was determined that the Zn content
reduced with longer CdCl2 deposition times. XPS also revealed that the degree of S interdiffusion across the p-n
junction increased with CdCl2 deposition time accompanied by an improvement in Voc.
A Comparative Study of Heat-Light Soaking Effect on CIGS Thin Film Solar Cells with Zinc Compound Buffer Layers Deposited by ALD and CBD Processes
Creators: name: Kobayashi, T.
name: Jehl Li Kao, Z.
name: Kao, L.
name: Nakada, T.
Publisher: name: WIP
Year: 2013
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2199-2202
description: The effects of a heat-light-soaking (HLS) on the cell performance were investigated for Cu(In,Ga)Se2
(CIGS) thin-film solar cells with CBD-ZnS(O,OH) and ALD-Zn(O,S) buffer layers. The CBD-ZnS(O,OH)/CIGS and
ALD-ZnS(O,S)/CIGS solar cells respectively showed a drastic increase and a slight increase in all basic cell parameters
after the HLS post-treatment under AM1.5, 100mW/cm2 illumination at 130 °C. X-ray photoelectron spectroscopy
showed the decreased S/(S+O) atomic ratio of the CBD-ZnS(O,OH) buffer layer, implying re-arrangement of the
conduction-band offset at the CBD-ZnS(O,OH)/CIGS interface. On the other hand, the change in S/(S+O) atomic ratio of
ALD-Zn(O,S) buffer layer was not observed. By optimizing the HLS and the deposition conditions for each layers, CBDZnS(
O,OH)/CIGS and ALD-Zn(O,S)/CIGS solar cells yielded total efficiencies of 18.8 and 18.7%, respectively.
The stretched exponential behavior and its underlying dynamics. The phenomenological approach
Creators: name: Górska, K.
name: Horzela, A.
name: Penson, K. A.
name: Dattoli, G.
name: Duchamp, G. H. E.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Statistical Mechanics (cond-mat.stat-mech)
subject: Mathematical Physics (math-ph)
subject: FOS: Physical sciences

description: We show that the anomalous diffusion equations with a fractional derivative in the Caputo or Riesz sense are strictly related to the special convolution properties of the Lévy stable distributions which stem from the evolution properties of stretched or compressed exponential function. The formal solutions of these fractional differential equations are found by using the evolution operator method where the evolution operator is presented as integral transforms whose kernel is the Green function. Exact and explicit examples of the solutions are reported and studied for various fractional order of derivatives and different initial conditions.
description: figures and references added
The Imperative of marital conflict resolution mechanism in marriage stability among couples in Lagos State Nigeria: Preventive Counselling Approaches
Creators: name: Abidogun, Moruf Adebayo
Publisher: name: figshare
Year: 2022
Subjects: subject: 170106 Health, Clinical and Counselling Psychology
subject: FOS: Psychology

description: As marital conflict increases on daily basis, there is need for preventing counseling in adopting conflict resolution mechanism to create marital stability among couples in Lagos State Nigeria. The study examined different type of marital conflict resolution styles as a mechanism to establish marital stability. The population of the study comprised all couples in Lagos state Nigeria, while the target population consisted of couples in Mushin Local Government Area of Lagos state. A descriptive research survey was used while stratified random sampling technique was adopted in selecting population sample. The research design adopted was descriptive survey method. Self-Constructed questionnaire named marital conflict resolution mechanisms questionnaire (MCRMQ) was used as instrument to elicit information from the participants. The instrument both construct and content reliability was validated by experts in the college of specialized and professional education in the university. The validity was at 0.05 significant level. The statistical technique used included independent T-test and chi-square. The findings revealed that marital conflicts experienced by married individuals in were solvable by application of conflict resolution mechanisms. The study recommended the establishment of marital conflicts resolution centers in all Local Government area in the state.
Polarity Control to Reinforce Interfaces between Dopant and Si Textured Surfaces for Junction Improvement in Laser Doping
Creators: name: Nishimura, H.
name: Tanaka, S.
name: Sugimura, E.
name: Fuyuki, T.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2072-2075
description: Present research shows importance of interface adhesion between dopant and substrate for emitter
properties in laser doping (LD). Voc was considerably improved with strengthened adhesion of interface, it was
contributed by changing chemical polarization from hydrophobic to hydrophilic before forming doping precursor. In
past study, we confirmed that surface electric defects were reduced by using smooth surface compared to rough
surface in LD for multi-crystalline silicon. In this study, we could prove that LD can be applied to textured surface
with keeping Jsc, Voc and F.F.. Rough surface didn’t appear after LD in the case of using hydrophilic textured
surface. It made homogeneous and deep phosphorus doping profile according to laser energy. In the result, Voc was
improved over 100 mV. This report includes interface and surface topographies, reflectances, phosphorus profiles and
photo I-V characteristics.
High Efficiency with Almost No Metallisation: Multiple Busbar Wire Interconnection of Plated Solar Cells
Creators: name: Edwards, M.
name: Evans, R.
name: Söderström, T.
name: Sugianto, A.
name: Koschier, L.
name: Wenham, S.R.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2097-2102
description: Perpendicular multiple busbar wires can be an effective way of interconnecting standard screen printed
solar cells with low resistive loss. The technology is also an effective way to interconnect plated solar cells, where
conventional soldered interconnects may be problematic. However, the full benefits of this interconnection
technology can be fully realized on plated cell structures with drastically reduced plated metallisation volume. This
paper presents a new selective emitter plated cell structure with metallisation reduced to around 1 μm thickness,
interconnected using Meyer Burger’s Smartwire perpendicular multiple busbar wire technique. Metal usage on the
cell is reduced by more than 90% compared to conventional plated or screen print cells and the use of Ag and Cu on
the front surface eliminated or drastically reduced, while high efficiency at the module level is achieved along with
environmental durability. Modelling is used to determine the potential benefits of multiple busbar interconnection
compared to conventional ribbon tabbing and soldering, and to show that further performance benefits are possible
with some cell process adjustments.
LID Reduction of c-Si Solar Cells with SiCN:H Deposited by PECVD
Creators: name: Pouliquen, S.
name: Marot, Y.
name: Coeuret, F.
name: Zauner, A.
name: Gouhinec, F.
name: Hong, J.
name: Madec, A.
name: Saint-Cast, P.
name: Hofmann, M.
name: Rentsch, J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2092-2096
description: Light Induced Degradation (LID) of boron doped p-type solar cells is attributed to the formation of
Boron and Oxygen complexes under illumination, degrading the cell performance after several hours. Kang and coworkers
showed that the LID could be reduced by replacing the standard hydrogenated silicon nitride (SiN:H) antireflection
film by a carbon–rich SiN:H film deposited from polymer solid or liquid source. In this paper, we show the
results obtained from the SiCN:H layers and SiCN:H/SiN:H stacks on the efficiencies before and after illumination,
compared to standard SiN:H cells. The single SiCN:H ARC layers resulted in a lower LID, however, the efficiencies
of the cells remained lower than the standard SiN:H based cells. For the cells based on a double-layer SiCN:H/SiN:H
ARC, however, the efficiencies improved strongly and were higher than the standard SiN:H reference cell. Up on
light soaking the LID was less pronounced for the carbon containing SiCN:H/SiN:H based cells.
Development of High Efficiency CIGS Modules
Creators: name: Matsunaga, K.
name: Kume, T.
name: Komaru, T.
name: Goto, H.
name: Nagasaki, H.
name: Irino, S.
name: Nakayama, Y.
name: Yonezawa, S.
name: Iwakura, T.
name: Hashimoto, H.
Publisher: name: WIP
Year: 2013
Subjects: THIN FILM SOLAR CELLS
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2106-2108
description: Thin film CIGS technologies have entered the commercialization phase, and each manufacturer is
competing to achieve high module efficiencies. As we have presented in the past, we applied unique processes, and
launched a commercial mass production line at Honda Soltec Co., Ltd. in 2007. We have made an effort to achieve
high module efficiency, and a module efficiency of 15.2 % (731 x 921 mm module) was obtained based on
selenization and InS buffer layer process. Four major technologies have been adopted: i) new selenization process to
improve the crystalline quality of the CIGS absorber, ii) new scribing technology to minimize the dead area in the
patterning process, iii) top “protection” layer to reduce the TCO resistivity and to improve the FF, iv) new packaging
technology to maximize the active area ratio of the modules.
Study of Silicon Nitride Film for Rear Surface Passivation
Creators: name: Mishina, K.
name: Ogishi, A.
name: Kojima, T.
name: Aoki, M.
name: Imai, D.
name: Saruwatari, T.
name: Nakamura, K.
name: Sumita, I.
name: Ohshita, Y.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2044-2046
description: New plasma enhanced chemical vapor deposition (PE-CVD) system “MCXS” is proposed for rear
surface passivation of silicon nitride (SiN) film. Due to the high-density plasma generated by the newly developed
multi-hollow cathode of "MCXS", it provides both superior hydrogen passivation and high deposition rate above 100
nm/min. For front surface passivation, long effective carrier lifetime and gain in Voc on n+ surface were obtained
owing to NH3 plasma pre-treatment. For rear surface passivation, low surface recombination velocity below 20 cm/s
and low fixed charge density below 10 x 1012 cm-2 of SiN film were achieved on p-type silicon wafer under the
condition of high refractive index. This SiN film has a potential to be applied to rear surface passivation of single layer
for cost-effective PERL cell.
Influence of Various Process Variations on the Fabrication of PERC Solar Cells
Creators: name: Schmitt, S.
name: Peter, C.
name: Olibet, S.
name: Theobald, J.
name: Schneider, A.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2059-2062
description: An industrially applicable PERC solar cell process was developed at ISC Konstanz that only uses a
PECVD-based nitride passivation stack (“MSiN”) for rearside passivation without the usage of thermal oxide. For
this development different processing steps for the rearside formation were investigated and the effect of their
combinations and variations tested on cell level. This paper presents an overview on these process variations, such as
rearside passivation by SiO/SiNX and MSiN, laser ablation with different subsequent cleaning steps and different
pastes and firing parameters for rearside metallization and their impact on cell performance. The best PERC cells
fabricated have an open circuit voltage of up to 652 mV and an efficiency of 19.7% with the potential of exceeding
20% with improved screen-printing for the frontside and optimized firing parameters for Co-firing.
Event-by-event hydrodynamics $+$ jet energy loss: A solution to the $R_{AA} \otimes v_2$ puzzle
Creators: name: Noronha-Hostler, Jacquelyn
name: Betz, Barbara
name: Noronha, Jorge
name: Gyulassy, Miklos
Publisher: name: arXiv
Year: 2016
Subjects: subject: Nuclear Theory (nucl-th)
subject: High Energy Physics - Phenomenology (hep-ph)
subject: Nuclear Experiment (nucl-ex)
subject: FOS: Physical sciences

description: High $p_T > 10$ GeV elliptic flow, which is experimentally measured via the correlation between soft and hard hadrons, receives competing contributions from event-by-event fluctuations of the low $p_T$ elliptic flow and event plane angle fluctuations in the soft sector. In this paper, a proper account of these event-by-event fluctuations in the soft sector, modeled via viscous hydrodynamics, is combined with a jet energy loss model to reveal that the positive contribution from low $p_T$ $v_2$ fluctuations overwhelms the negative contributions from event plane fluctuations. This leads to an enhancement of high $p_T > 10$ GeV elliptic flow in comparison to previous calculations and provides a natural solution to the decade long high $p_T$ $R_{AA} \otimes v_2$ puzzle. We also present the first theoretical calculation of high $p_T$ $v_3$, which is shown to be compatible with current LHC data. Furthermore, we discuss how short wavelength jet-medium physics can be deconvoluted from the physics of soft, bulk event-by-event flow observables using event shape engineering techniques.
description: 7 pages, 3 figures, references added, substantially revised, accepted for publication in Phys. Rev. Lett
Functional Thin-Dielectric Layer Solutions for High Performance Crystalline Si Solar Cells
Creators: name: Hong, J.
name: Pouliquen, S.
name: Coeuret, F.
name: Marot, Y.
name: Gouhinec, F.
name: Zauner, A.
name: Urrejola, E.
name: Saint-Cast, P.
name: Hofmann, M.
name: Rentsch, J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2086-2091
description: Developing and engineering functional thin-film material solutions are essential in order to achieve a
high performance in crystalline Si solar cells. Various oxide, nitride and carbide-based layers and their multi-layered
stacks were deposited by PECVD (plasma enhanced chemical vapor deposition) and ALD (atomic layer deposition)
for the applications of optical coatings, surface passivation for frontside and rearside, bulk passivation, capping,
barriers, and other functional layers. For example, PECVD silicon carbon nitride layers may serve as
optical/capping/protection layer on front- and rearside for p-type or n-type c-Si solar cells. Aluminum oxide surface
passivation layers deposited from alternative precursor were proposed in terms of safety and handling
maneuverability for application of p-type rearside dielectric passivation.
Using PECVD Large Area System with Electrical Asymmetry Effect for Passivation of Si Wafers
Creators: name: Hrunski, D.
name: Janssen, A.
name: Fritz, T.
name: Gross, D.
name: Meiners, B.-M.
name: Borchert, D.
name: Grabosch, G.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2020-2023
description: The influence of the deposition conditions for the Electrical Assymetry Effect (EAE) technique on the
passivation quality of the interface between commercial grade Czochralski (CZ) and thin silicon films was
investigated. It has been shown that the EAE allows increasing significantly lifetimes of minority carriers (above
25%) by controlling silane containing plasma properties during thin silicon film deposition. The results obtained in
large scale PECVD reactor (Gen 5) are presented in this paper. A combination of the excitation frequencies
13.56 MHz + 27.12 MHz was used. The self bias voltage on the live electrode has a strong influence on film quality.
Additional evidence is provided that by help of EAE the ion energy and ions flow towards the substrate could be
controlled.
Dynamics, Control, and Estimation for Aerial Robots Tethered by Cables or Bars
Creators: name: Tognon, Marco
name: Franchi, Antonio
Publisher: name: arXiv
Year: 2016
Subjects: subject: Robotics (cs.RO)
subject: Systems and Control (eess.SY)
subject: FOS: Computer and information sciences
subject: FOS: Electrical engineering, electronic engineering, information engineering

description: We consider the problem of controlling an aerial robot connected to the ground by a passive cable or a passive rigid link. We provide a thorough characterization of this nonlinear dynamical robotic system in terms of fundamental properties such as differential flatness, controllability, and observability. We prove that the robotic system is differentially flat with respect to two output pairs: elevation of the link and attitude of the vehicle; elevation of the link and longitudinal link force (e.g., cable tension, or bar compression). We show the design of an almost globally convergent nonlinear observer of the full state that resorts only to an onboard accelerometer and a gyroscope. We also design two almost globally convergent nonlinear controllers to track any sufficiently smooth time-varying trajectory of the two output pairs. Finally we numerically test the robustness of the proposed method in several far-from-nominal conditions: nonlinear cross-coupling effects, parameter deviations, measurements noise and non ideal actuators.
Comparison of Aluminum Oxide Layers Deposited by PECVD and Pulsed Magnetron Sputtering for Dielectric Rear Side Passivation of Crystalline Silicon Solar Cells
Creators: name: Hegr, O.
name: Cech, P.
name: Kusko, M.
name: Kadlec, S.
name: Sobota, J.
name: Barinka, R.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2047-2049
description: The aim of our work is to test other alternative technologies available in the Solartec's research
laboratory. There are a standard PECVD technology and a unique OKS („Otto Klobe und Sohn“) sputtering system,
specially developed for photovoltaic applications. Sputtering system OKS is based on a batch process for 36 of 5“ Si
substrates, where very good homogeneity of dielectric layers (±2%) is achieved. OKS sputtering equipment was
specially developed for the pilot plant in order to create a viable alternative to existing PECVD and opportunities for
a wider use of the system, especially for the formation of multilayer dielectric films suitable for colored solar cells.
Light-Induced Plating of Silicon Solar Cell Conductors Using a Novel Low Acid, High Speed Copper Electroplating Process
Creators: name: Letize, A.
name: Lee, B.
name: Crouse, K.
name: Cullen, D.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2016-2019
description: The focus of this work concerns the current status of using electrochemically deposited copper as the
primary front side conductor for silicon solar cells. Plated conductors consisting of nickel and copper offer many
advantages over the use of screened silver paste, including cost savings, reduced shading losses, lower contact
resistance and higher line conductivity. Traditionally, the drawbacks of using electroplated copper include low
plating speed, the corrosive nature of the chemistry, and poor adhesion of the plated conductors. A novel copper
chemistry based on a low-acidity electrolyte is introduced, which permits higher plating speeds and improved
throughput when compared to sulfuric acid copper formulas. Additionally, the low corrosiveness of the chemistry
makes it more compatible with different cell designs and equipment configurations. A series of experiments is
presented which compares the properties and adhesion results of the new electrolyte with a commercially available
sulfuric acid copper chemistry. The reliability of cells and modules fabricated using laser ablation patterning and
light-induced plating of the new copper chemistry is independently verified by IEC 61215 testing. This work offers a
roadmap for eliminating silver paste costs while simultaneously improving the performance and reliability of solar
cells.
Kinetics of Deposition in the Diffusion-Controlled Limit
Creators: name: Krapivsky, P. L.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Statistical Mechanics (cond-mat.stat-mech)
subject: Soft Condensed Matter (cond-mat.soft)
subject: FOS: Physical sciences

description: The adsorption of particles diffusing in a half-space bounded by the substrate and irreversibly sticking to the substrate upon contacts is investigated. We show that when absorbing particles are planar disks diffusing in the three-dimensional half-space, the coverage approaches its saturated jamming value as $t^{-1}$ in the large time limit [generally as $t^{-1/(d-1)}$ when the substrate is $d$ dimensional and $d>1$, and as $e^{-t/\ln(t)}$ when $d=1$]. We also analyze the asymptotic behavior when particles are spherical and when particles are planar aligned squares.
description: 8 pages, 2 figures
Texturing and Smoothing Process of Thin c-Si Wafers for a-Si:H/c-Si Heterojunction Solar Cells
Creators: name: De Maria, A.
name: Bobeico, E.
name: Della Noce, M.
name: La Ferrara, V.
name: Lancellotti, L.
name: Mazzarella, L.
name: Izzi, M.
name: Tucci, M.
name: Delli Veneri, P.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2005-2008
description: In this paper wet anisotropic texturing and subsequent smoothing of <100> c-Si wafers, 350 and 100
μm thick, are investigated for reducing light reflection and improving light confinement within silicon substrate
suitable for amorphous/ crystalline silicon heterojunction solar cells. The influence of time of the etching process
used in the smoothing procedure is studied. To this aim reflectance measurements and scanning electron microscopy
images are used to evaluate the surface morphology after the chemical etching.
Silicon Texturization by Metal-Assisted Etching Using Different Noble Metals
Creators: name: Lévy-Clément, C.
name: Chartier, C.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 2009-2012
description: Metal-assisted etching is a promising technique to texturize multicrystalline silicon for solar cell
application. The etching, performed in HF solution containing an oxidizing agent, is catalyzed by noble metal particles
previously deposited on Si surface. In this work, we investigated the influence of the chemical nature of the noble metal
catalysts (Ag, Au, Pt, Pd) on Si etching rate and morphology of the porous Si formed on (100) and (111) oriented p-type
silicon. The porous Si formed at the surface of Si is further dissolved in an alkaline solution revealing the macroporous
Si formed underneath porous Si. The morphology and optical properties of the macroporous Si surface were analyzed as
a function of the catalysts used and Si crystallographic orientations, with the goal to evaluate the type of texturization of
Si for solar cell application.
Rear Side Laser Doping through PECVD AlOx/SiNx Passivation Dielectrics on P-Type Cz Silicon Solar Cells
Creators: name: Xiao, B.
name: Hallam, B.
name: Mai, L.
name: Lin, D.
name: Chong, C.M.
name: Lennon, A.J.
name: Wenham, S.R.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1989-1993
description: In this paper, we report on the effect of different annealing processes on rear side AlOx/SiNx stack
passivation and the effect of AlOx thickness on implied open circuit voltage (iVoc) loss during laser doping using the
AlOx layer and an additionally applied boron spin-on-dopant layer as a dopant source. Thin layers of AlOx capped by
SiNx show improved iVoc after thermal annealing with slightly higher values observed after a 700oC peak temperature
firing process than a conventional 400oC anneal. For thicker layers, blistering is observed after the firing process resulting
in substantially lower iVoc than wafers annealed at 400oC. The improved passivation provided by thinner layers annealed
at 400 oC is attributed to more effective hydrogen diffusion into the bulk of the wafers. When laser doping through the
AlOx layers, thick AlOx layers result in lower voltage loss; however, the iVoc value degrade upon subsequent annealing.
On the other hand, thin AlOx layers show a substantial improvement upon the same annealing process.
Surface Preparation and Optimization of Amorphous Silicon Deposition for Silicon Heterojunction Solar Cells
Creators: name: Herasimenka, S.
name: Dauksher, B.
name: Tracy, C.
name: Ghosh, K.
name: Sharma, V.
name: Bailly, M.
name: Bowden, S.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1943-1946
description: Design of Experiment (DOE) approach was used to optimize the characteristics of intrinsic a-Si and doped a-Si
films for silicon heterojunction (SHJ) solar cells where effective lifetime and bulk resistivity were used as optimization
parameters for intrinsic and doped a-Si respectively. The performance of the optimized films on alkaline etched wafers required
additional optimization of post etch cleans. We have developed a cleaning cycle which allows 725-735 mV local Voc and 81-
83% local pFF on non-metallized SHJ solar cells with no reflectance losses. A batch of 16 wafers demonstrated good across
wafer and wafer to wafer passivation uniformity with 2.3 ms mean effective lifetime and 0.6 ms standard deviation.
Pyrosol Deposited AlOx for Crystalline Silicon Solar Cells
Creators: name: Untila, G.G.
name: Kost, T.N.
name: Chebotareva, A.B.
name: Stepanov, A.S.
name: Zaks, M.B.
name: Sitnikov, A.M.
name: Solodukha, O.I.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1960-1963
description: AlOx/(p+nn+)Cz-Si/IFO and ITO/AlOx/(p+nn+)Cz-Si/IFO solar cell structures have been fabricated
from n-type Czochralski (Cz) silicon wafers through boron and phosphorus diffusion for producing the p+-Si emitter
and n+-Si layer, respectively. The In2O3:F (IFO), AlOx, and In2O3:Sn (ITO) films have been grown by ultrasonic
spray pyrolysis at 475 °С, 330 °С, and 375 °С, respectively. We have studied the effects of the AlOx film thickness in
the range 27–108 nm, the heat treatment time at 330 °С in an Ar + 5% O2 atmosphere containing vapor of a 2 M H2O
solution in methanol, and the sheet resistance of the p+-Si emitter in the range 28–133 Ω/ (varied through layer-bylayer
chemical etching) on the internal quantum efficiency (IQE) spectrum and photocurrent JIQE (evaluated from the
IQE spectrum and AM 1.5G solar spectrum (ASTM Standard G173-03)) of the structures and their photovoltage and
pseudo-fill factor evaluated from Suns-Voc measurements. The results demonstrate that the p+-emitter passivation
efficiency increases with increasing AlOx film thickness and as a result of heat treatment. The optimal sheet
resistance of the emitter is ~65 Ω/. The pseudo-efficiency of the ITO/AlOx/(p+nn+)Cz-Si/IFO structures was 20.2%
under front illumination.
Kriging interpolating cosmic velocity field. II. Taking anistropies and multistreaming into account
Creators: name: Yu, Yu
name: Zhang, Jun
name: Jing, Yipeng
name: Zhang, Pengjie
Publisher: name: arXiv
Year: 2016
Subjects: subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: FOS: Physical sciences

description: Measuring the volume-weighted peculiar velocity statistics from inhomogeneously and sparsely distributed galaxies/halos, by existing velocity assignment methods, suffers from a significant sampling artifact. As an alternative, the Kriging interpolation based on Gaussian processes was introduced and evaluated [Y. Yu, J. Zhang, Y. Jing, and P. Zhang, Phys. Rev. D 92, 083527 (2015)]. Unfortunately, the most straightforward application of Kriging does not perform better than the existing methods in the literature. In this work, we investigate two physically motivated extensions. The first takes into account of the anisotropic velocity correlations. The second introduces the nugget effect, on account of multi-streaming of the velocity field. We find that the performance is indeed improved. For sparsely sampled data [$n_P\lesssim 6\times 10^{-3}(h^{-1} {\rm Mpc})^{-3}$] where the sampling artifact is the most severe, the improvement is significant and is two-fold: 1) The scale of reliable measurement of the velocity power spectrum is extended by a factor $\sim 1.6$, and 2) the dependence on the velocity correlation prior is weakened by a factor of $\sim 2$. We conclude that such extensions are desirable for accurate velocity assignment by Kriging.
description: 9 pages, 6 figures, accepted by PRD. Matched publication
An Innovative Cleaning Solution for Conversion Efficiency Improvement in PV Industry
Creators: name: Han, W.
name: Li, W.
name: Hu, J.
name: Niu, X.
name: Jiang, Q.
name: Li, Y.
name: Qiu, Z.
name: Treichel, H.
name: Ho, D.
name: Tang, Z.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1947-1951
description: In the Cs-solar cells manufacturing metallic impurities would be introduced during the processes of silicon
purifying, ingot casting, wire sawing and others. Interfacial contamination, such as trace metal Fe, Ni, Cr and Cu, is
one of major causes of poor efficiency and rapid degradation of Cs-solar cells. So there will be a large room for
enhancement in conversion efficiency by using special cleaning chemical and rinsing process for removal of trace
contaminations during the cell manufacturing. In this paper, the concentration of trace metals from wafer surface
was investigated and one special chemical-SUN-ETM agent-was used after wafer texture for removing metallic
impurities to optimize the conversion efficiency of solar cells. It was found that the concentrations of Fe, Cr, Ni and
Cu from the wafer surface were reduced dramatically by SUN-ETM cleaning process. Minority carrier lifetime and
internal quantum response in short wavelength were enhanced due to removal of the metal impurities. Moreover,
there was a significant increase in conversion efficiency by 0.21%. The work in this paper showed that the SUN-E
agent and its cleaning technique will have promising prospects for high efficiency polycrystalline silicon solar cells
manufacturing industry.
Influence of Emitter Profiles on Electrical Characteristics of Solar Cells
Creators: name: Yeh, L.-W.
name: Kao, M.-J.
name: Huang, H.-H.
name: Huang, P.-S.
name: Cheng, L.-W.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1957-1959
description: A homogeneous and low recombination level emitter formation is an important aim in solar cell device.
In this work, we studied the influence of three different doping profile of p-type silicon solar cell that included
high/low phosphorus surface concentration and deeper junction. In the certain sheet resistance range, reducing the
surface concentration by one order gap (from 2E21/cm3 to 2E20/cm3) makes no significant difference in carrier
lifetime and open circuit voltage (Voc). However, the surface concentration of phosphorus strongly affects blue
response in quantum efficiency (QE) and short circuit current density (Jsc). Besides, as for cells with similar peak
concentration, the dopant activation ratio determines the blue response and Jsc. The connection between junction
profiles and cell efficiency has been extensively studied. In order to characterize the physical and electrical properties
of different junction profile, secondary ion mass spectroscopy (SIMS), Sinton WCT-120, QEX7 and dark-IV
measurement tools are used in this study.udy.
Statistical Test of Distance--Duality Relation with Type Ia Supernovae and Baryon Acoustic Oscillations
Creators: name: Ma, Cong
name: Corasaniti, Pier-Stefano
Publisher: name: arXiv
Year: 2016
Subjects: subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: FOS: Physical sciences

description: We test the distance--duality relation $η\equiv d_L / [ (1 + z)^2 d_A ] = 1$ between cosmological luminosity distance ($d_L$) from the JLA SNe Ia compilation (arXiv:1401.4064) and angular-diameter distance ($d_A$) based on Baryon Oscillation Spectroscopic Survey (BOSS; arXiv:1607.03155) and WiggleZ baryon acoustic oscillation measurements (arXiv:1105.2862, arXiv:1204.3674). The $d_L$ measurements are matched to $d_A$ redshift by a statistically consistent compression procedure. With Monte Carlo methods, nontrivial and correlated distributions of $η$ can be explored in a straightforward manner without resorting to a particular evolution template $η(z)$. Assuming independent constraints on cosmological parameters that are necessary to obtain $d_L$ and $d_A$ values, we find 9% constraints consistent with $η= 1$ from the analysis of SNIa + BOSS and an 18% bound results from SNIa + WiggleZ. These results are contrary to previous claims that $η< 1$ has been found close to or above the $1 σ$ level. We discuss the effect of different cosmological parameter inputs and the use of the apparent deviation from distance--duality as a proxy of systematic effects on cosmic distance measurements. The results suggest possible systematic overestimation of SNIa luminosity distances compared with $d_A$ data when a Planck ΛCDM cosmological parameter inference (arXiv:1502.01589) is used to enhance the precision. If interpreted as an extinction correction due to a gray dust component, the effect is broadly consistent with independent observational constraints.
description: v1: Initial analysis; v2: Using BOSS DR12 consensus BAO data w/ expanded analysis; v3: Major revision & expansion; v4: Matching ApJ-accepted version, 11 pages, 4 tables, 6 figures. Code & data for replication: see https://doi.org/10.5281/zenodo.1219473 Comments welcome
New Thermosetting/Thermosettable One Component Tandem Designed for Photovoltaic Applications
Creators: name: Miliciani, M.
name: Serenelli, L.
name: Izzi, M.
name: Tucci, M.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1894-1898
description: Solar cells market is covered by various technologies, the most diffused of which are based on crystalline silicon, where
one of the most attractive cell architecture to produce high efficiency is a-Si/c-Si heterojunctions. The remaining market
share is covered by thin film cells, e.g. CdTe, CIS/CIGS, and Dye Sensitised Solar Cells. For both heterojunction and
thin film cells a Trasparent Condutive Oxide (TCO) as a full area contact is adopted, but in some cases also a Screen
Printing is used to reduce undesired series resistance. For such applications there is need of a special paste, which has to
form an effective contact on the TCO layer with the highest aspect ratio, curing at the maximum temperature of 250 °C,
and having an excellent mechanical adhesion to TCO’s such as ITO (Indium Tin Oxide) or ZnO (Zinc Oxide). In this
paper we show how we have designed pastes able to satisfy the above requirements by introducing a formulation based
on silver micrometric powder and a tandem thermosetting/thermosettable resin binder to allow good Powder Volume
Concentration values, combined with fine printability and adhesion to TCO’s.
Impact of Annealing on the Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells
Creators: name: Mikolasek, M.
name: Nemec, M.
name: Kovác, J.
name: Vincze, A.
name: Foti, M.
name: Gerardi, C.
name: Mannino, G.
name: Valenti, L.
name: Lombardo, S.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1903-1907
description: In this paper we presented the study of post-deposition annealing influence on both heterointerface
quality and output performance of the silicon heterojunction solar cells prepared by different deposition techniques.
Two major effects caused by thermal annealing on solar cell efficiency occur. The first effect indicates slight
improvement of the interface quality with annealing up to 200ºC in forming gas atmosphere. The second one reveals
formation of parasitic Schottky barrier accompanied by strong decreases of the output parameters and increase of the
defect state density at the heteointerface with annealing at higher temperatures.
R & D Pilot-Line Production of Silicon Heterojunction Solar Cells with the Conversion Efficiency Up to 19%
Creators: name: Wang, W.
name: Zhao, L.
name: Diao, H.
name: Zhang, W.
name: Zhou, C.
name: Chen, J.
name: Wang, G.
name: Chen, D.P.
name: Zhou, S.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1856-1860
description: We report our MW scale pilot production of amorphous/crystalline silicon heterojunction (SHJ) solar cells
on n-type Cz c-Si wafers. Although Sanyo has successfully commercialized such high efficiency solar cell called HITTM,
others seldom have production experience on such cells. For successful mass production of SHJ solar cells, both the
equipment selection and the process optimization for the full-line are critical. Firstly, we established the complete pilot
line with a series of suitable equipment. Then, we mainly focused on the process optimization of the wafer cleaning and
the deposition of the amorphous silicon layers, including the intrinsic passivation layer, the phosphorus-doped layer for
the emitter, and the boron-doped layer for the back surface field. As the result, the conversion efficiency up to 19.2% has
been obtained on the commercial 125 mm×125 mm Cz c-Si wafer.
Su Giovanni da Fano e l'Hesperis di Basinio
Creators: name: Lollini, Fabrizio
Publisher: name: La Rivista di Engramma
Year: 2008
Subjects: Malatesta
Temple
Humanism

description: Both in relation to the figurative culture of Rimini, and - more specifically - in relation to the vicissitudes of Sigismondo and the Malatesta Temple, the illustrative kit accompanying three copies of the Hesperis, a Latin poem by Basinio da Parma, plays an important role. One of the humanists - perhaps the best known - among those present at the local court, he was also the author of another of the great best sellers linked to the literary and erudite activity of the Romagna court, the Astronomicon - the third being Roberto Valturio's De re militari. A representative role is delegated to these works, certainly in a conscious and organised manner: the art of war, in its 'scientific' or epic form, and astronomical-astrological expertise are the two fields in which Pandolfo's son wished to make the leading role of his entourage emerge, and to which he delegated the diffusion of his own positive image, in a very different material form - but culturally analogous - compared to the great monuments of Castel Sismondo or the Temple itself.
Spectral deferred corrections with fast-wave slow-wave splitting
Creators: name: Ruprecht, Daniel
name: Speck, Robert
Publisher: name: arXiv
Year: 2016
Subjects: subject: Numerical Analysis (math.NA)
subject: FOS: Mathematics
subject: 65M70, 65M20, 65L05, 65L04

description: The paper investigates a variant of semi-implicit spectral deferred corrections (SISDC) in which the stiff, fast dynamics correspond to fast propagating waves ("fast-wave slow-wave problem"). We show that for a scalar test problem with two imaginary eigenvalues $i λ_{fast}$, $i λ_{slow}$, having $Δt \left(\left| λ_{fast} \right| + \left| λ_{slow} \right| \right) < 1$ is sufficient for the fast-wave slow-wave SDC (FWSW-SDC) iteration to converge and that in the limit of infinitely fast waves the convergence rate of the non-split version is retained. Stability function and discrete dispersion relation are derived and show that the method is stable for essentially arbitrary fast-wave CFL numbers as long as the slow dynamics are resolved. The method causes little numerical diffusion and its semi-discrete phase speed is accurate also for large wave number modes. Performance is studied for an acoustic-advection problem and for the linearised Boussinesq equations, describing compressible, stratified flow. FWSW-SDC is compared to a diagonally implicit Runge-Kutta (DIRK) and IMEX Runge-Kutta (IMEX) method and found to be competitive in terms of both accuracy and cost.