title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸Ñ Ð¿Ð¾ÑÐ¾ÐºÐ¾Ð² Ð°Ð»ÑÐ¼Ð¸Ð½Ð¸Ñ Ð¸ Ð°Ð¼Ð¼Ð¸Ð°ÐºÐ° Ð² Ð¿ÑÐ¾ÑÐµÑÑÐµ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸ ÑÐ»Ð¾ÐµÐ² AlN Ð½Ð° ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ AlN/AlGaN
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Investigation of the influence of aluminum and ammonia flux ratio during molecular beam epitaxy of AlN layers on the properties of AlN/AlGaN heterostructures
Creators: name: ÐÐ»Ð¾ÑÐ½Ð¸ÐºÐ¾Ð², ÐÐ°Ð²ÐµÐ»
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2022
Subjects: Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð°Ñ Ð»ÑÑÐµÐ²Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð½Ð¸ÑÑÐ¸Ð´Ñ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð² III-Ð³ÑÑÐ¿Ð¿Ñ
Ð²ÑÑÐ¾ÐºÐ¾ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÐ¹ Ð±ÑÑÐµÑÐ½ÑÐ¹ ÑÐ»Ð¾Ð¹
Ð´Ð²ÑÐ¼ÐµÑÐ½ÑÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¹ Ð³Ð°Ð·
Ð¿Ð¾Ð´Ð²Ð¸Ð¶Ð½Ð¾ÑÑÑ
molecular beam epitaxy
growth processes
high-temperature buffer layers
two-dimensional electron gas
ammonia flow
metal organic chemical vapor deposition

description: Ð Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÐµ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²ÑÑÐ¾ÐºÐ¾ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÑ Ð±ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð¾ÐµÐ² AlN/AlGaN, Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ NH3-MBE Ð¿ÑÐ¸ ÑÐºÑÑÑÐµÐ¼Ð°Ð»ÑÐ½Ð¾ Ð²ÑÑÐ¾ÐºÐ¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ (Ð´Ð¾ 1200Â°C), Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÐµÑ Ð´Ð¾ÑÑÐ¸ÑÑ Ð²ÑÑÐ¾ÐºÐ¾Ð³Ð¾ ÑÐ¾Ð²ÐµÑÑÐµÐ½ÑÑÐ²Ð° Ð²ÐµÑÑÐ½ÐµÐ³Ð¾ ÑÐ»Ð¾Ñ GaN. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð¿Ð¾ÑÐ¾ÐºÐ° Ð°Ð¼Ð¼Ð¸Ð°ÐºÐ° Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ 1000-1200Â°C. ÐÐ¾Ð»ÑÑÐµÐ½Ð° Ð°ÑÐ¾Ð¼Ð°ÑÐ½Ð¾-Ð³Ð»Ð°Ð´ÐºÐ°Ñ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÑ AlN. Ð Ð¿ÑÐ¾ÑÐµÑÑÐµ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ ÑÐµÑÐµÐ½Ñ ÑÐ»ÐµÐ´ÑÑÑÐ¸Ðµ Ð·Ð°Ð´Ð°ÑÐ¸:ÐÑÑÐ°ÑÐ¸Ð²Ð°Ð½Ð¸Ðµ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ AlN/AlGaN/GaN/AlGaN Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð½Ð°ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ ÑÐ¾ÑÑÐ°.ÐÑÑÑÐµÑÑÐ²Ð»ÐµÐ½Ð¸Ðµ ÐºÐ¾Ð½ÑÑÐ¾Ð»Ñ Ð² Ð¿ÑÐ¾ÑÐµÑÑÐµ ÑÐ¾ÑÑÐ° ÑÐ»ÐµÐ´ÑÑÑÐ¸Ð¼Ð¸ Ð¼ÐµÑÐ¾Ð´Ð°Ð¼Ð¸: Ð»Ð°Ð·ÐµÑÐ½Ð°Ñ Ð¸Ð½ÑÐµÑÑÐµÑÐ¾Ð¼ÐµÑÑÐ¸Ñ Ð¸ Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ñ Ð±ÑÑÑÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð².ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ð¹ ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¿Ð¾Ð»ÑÑÐ¸Ð²ÑÐ¸ÑÑÑ ÑÑÑÑÐºÑÑÑ.ÐÐ½Ð°Ð»Ð¸Ð· Ð´Ð°Ð½Ð½ÑÑÐÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ðµ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¿Ð¾Ð´ÑÐ¾Ð´Ð¾Ð² Ð½Ð° ÑÑÐ°Ð¿Ðµ ÑÐ¾ÑÑÐ° Ð±ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð¾ÐµÐ² (ÑÑÑÑÐ°ÐºÑÐ°Ð½Ñ Ga Ð¸Ð»Ð¸ Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¹ Ð¿Ð¾ÑÐ¾Ðº Ð°Ð¼Ð¼Ð¸Ð°ÐºÐ° Ð¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸) Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÐµÑ Ð·Ð°Ð¼ÐµÑÐ½Ð¾ ÑÐ²ÐµÐ»Ð¸ÑÐ¸ÑÑ Ð¿Ð¾Ð´Ð²Ð¸Ð¶Ð½Ð¾ÑÑÑ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÐµÐ¹ Ð² Ð´Ð²ÑÐ¼ÐµÑÐ½Ð¾Ð¼ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¼ Ð³Ð°Ð·Ðµ.
description: It is shown that the use of high-temperature AlN/AlGaN buffer layers grown by NH3 -MBE at extremely high temperatures (up to 1200Â°C) allows one to improve drastically the structural quality of topmost GaN layer. The influence of an ammonia flow in the temperature range 1000â1200Â°C was investigated. An atomic-smooth AlN surface was obtained. In the process, the following tasks were solved:Growing of AlN / AlGaN / GaN / AlGaN heterostructures at different flows of aluminum and ammonia.Monitoring during growth by the following methods: laser interferometry and diffraction of fast electrons.Measurement of the physical parameters of the resulting structures.Data analysisThe use of various approaches at the initial stage of growth of buffer layers (Ga-surfactant or optimized ammonia flow and substrate temperature) can significantly increase the carrier mobility in a two-dimensional electron gas.