title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð»Ð¾ÐºÐ°Ð»ÑÐ½ÑÑ ÑÐ»ÐµÐºÑÑÐ¾ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ¸ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð¿Ð¾ÑÐ»Ðµ Ð¼Ð¾Ð´Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¸ Ð¼Ð¾ÑÐ½ÑÐ¼Ð¸ Ð»Ð°Ð·ÐµÑÐ½ÑÐ¼Ð¸ Ð¸Ð¼Ð¿ÑÐ»ÑÑÐ°Ð¼Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: The study of the local electrophysical properties of the silicon surface after modification by powerful laser pulses
Creators: name: Ð¨ÐµÐ»ÑÐ¿Ð¸Ð½Ð°, Ð¡Ð¾ÑÑÑ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: ÑÐºÐ°Ð½Ð¸ÑÑÑÑÐ°Ñ Ð·Ð¾Ð½Ð´Ð¾Ð²Ð°Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
Ð°ÑÐ¾Ð¼Ð½Ð¾-ÑÐ¸Ð»Ð¾Ð²Ð°Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
ÑÐ»ÐµÐºÑÑÐ¾ÑÑÐ°ÑÐ¸ÑÐµÑÐºÐ°Ñ ÑÐ¸Ð»Ð¾Ð²Ð°Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
ÑÐºÐ°Ð½Ð¸ÑÑÑÑÐ°Ñ ÐµÐ¼ÐºÐ¾ÑÑÐ½Ð°Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
Ð»Ð°Ð·ÐµÑÐ½Ð¾Ðµ Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ
ÐºÑÐµÐ¼Ð½Ð¸Ð¹
ÑÑÑÑÐºÑÑÑÐ° Ð¼ÐµÑÐ°Ð»Ð»-Ð¾ÐºÑÐ¸Ð´-Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸Ðº
scanning probe microscopy
atomic force microscopy
electrostatic force microscopy
scanning capacitance microscopy
laser doping
silicon
metal-oxide-semiconductor structure

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² ÐºÑÐµÐ¼Ð½Ð¸Ñ, Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¿ÑÑÐµÐ¼ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð³Ð¾ Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ. ÐÐ°Ð´Ð°ÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐµÑÐ°Ð»Ð¸ÑÑ Ð² ÑÐ¾Ð´Ðµ ÑÐ°Ð±Ð¾ÑÑ: 
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description: The given work is devoted to the study of silicon samples obtained by laser doping. The research set the following goals:
1. The study of the basics of Atomic Force Microscopy, Electrostatic Force Microscopy and Scanning Capacitance Microscopy.
2. To carry out model experiments using the afore-mentioned methods.
3. To conduct experiments on laser doped silicon samples.
4. To analyze the results obtained.
Studies were conducted at The Ioffe Institute on samples provided by the The Lebedev Physical Institute of the RAS. 
In the course of the work, silicon samples obtained by laser doping in a liquid carbon disulfide medium were studied. One of the samples was annealed and quenched in air. The methods of Atomic Force Microscopy was used to obtain the topography and potential profiles of the samples. The scan results suggest that the potential of the modified and unmodified surfaces is equalized after annealing, which may be due to the generation of a defect on the silicon surface. Thus, the results of the study suggest that further study of the surface properties of laser modified silicon using Scanning Capacitance Microscopy is possible only with unburned samples.