title: ÐÐ¾Ð½Ð¸ÑÐ¾ÑÐ¸Ð½Ð³ Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ¸ GaAs ÐºÐ°Ðº ÑÐ¿Ð¾ÑÐ¾Ð± ÐºÐ¾Ð½ÑÑÐ¾Ð»Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð¿ÑÐ¸ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð¿ÑÑÐºÐ¾Ð²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Control of GaAs surface as a method of molecular beam epitaxy growth temperature verification
Creators: name: ÐÑÐ·Ð½ÐµÑÐ¾Ð²Ð°, Ð¯Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð¿ÑÑÐºÐ¾Ð²Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ñ Ð±ÑÑÑÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð²
GaAs
ÑÐµÑÐ¼Ð¾Ð¿Ð°ÑÐ°
ÐÐ-Ð¿Ð¸ÑÐ¾Ð¼ÐµÑÑ
ÑÐµÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¾Ð½Ð½ÑÐµ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ñ
ÑÐµÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¾Ð½Ð½ÑÐµ Ð¿ÐµÑÐµÑ Ð¾Ð´Ñ
molecular beam epitaxy
reflection high-energy electron diffraction
thermocouple
pyrometer
reconstruction
reconstruction modifications

description: Ð ÑÐ°Ð¼ÐºÐ°Ñ Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ» ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° Ð¼ÐµÑÐ¾Ð´Ð¸ÐºÐ° ÐºÐ¾ÑÐ²ÐµÐ½Ð½Ð¾Ð³Ð¾ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ ÑÐ¾ÑÑÐ¾Ð²Ð¾Ð¹ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð² Ð¿ÑÐ¾ÑÐµÑÑÐµ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð¿ÑÑÐºÐ¾Ð²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸. ÐÐµÑÐ°Ð»ÑÐ½Ñ Ð°Ð½Ð°Ð»Ð¸Ð· ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ ÑÐµÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¾Ð½Ð½ÑÑ Ð¿ÐµÑÐµÑÐ¾Ð´Ð¾Ð², Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð½ÑÑ Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ ÐÐÐ­ Ð½Ð° Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ GaAs in situ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ð¸ Ð±ÑÑÑÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð² Ð½Ð° Ð¾ÑÑÐ°Ð¶ÐµÐ½Ð¸Ðµ, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ, Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÑÐµÐ¼ÑÑ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ ÑÐµÑÐ¼Ð¾Ð¿Ð°ÑÑ Ð¸ ÐÐ-Ð¿Ð¸ÑÐ¾Ð¼ÐµÑÑÐ°, Ð¿Ð¾ÐºÐ°Ð·ÑÐ²Ð°ÐµÑ, ÑÑÐ¾ ÑÐ°Ð·Ð½Ð¸ÑÐ° Ð¼ÐµÐ¶Ð´Ñ ÑÐµÐ°Ð»ÑÐ½ÑÐ¼Ð¸ (TS) Ð¸ Ð¸Ð·Ð¼ÐµÑÑÐµÐ¼ÑÐ¼Ð¸ (TTC, TPIR) Ð·Ð½Ð°ÑÐµÐ½Ð¸ÑÐ¼Ð¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ Ð´Ð»Ñ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐµÐº GaAs(001) Ð¸ GaAs(111)B Ð¼Ð¾Ð¶ÐµÑ Ð´Ð¾ÑÑÐ¸Ð³Ð°ÑÑ ~100â120Â°Ð¡. Ð ÑÐ°Ð±Ð¾ÑÐµ Ð¾Ð¿Ð¸ÑÑÐ²Ð°ÐµÑÑÑ Ð½Ð°Ð±Ð¾Ñ ÑÐµÐ¿ÐµÑÐ½ÑÑ ÑÐ¾ÑÐµÐº, ÐºÐ¾ÑÐ¾ÑÑÐµ Ð¼Ð¾Ð³ÑÑ Ð±ÑÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ñ Ð¿ÑÐ¸ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ð¸ ÐºÐ°Ð»Ð¸Ð±ÑÐ¾Ð²Ð¾ÑÐ½ÑÑ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐµÐ¹ TTC/TPIR Ð¸ TS ÐºÐ°Ðº ÑÑÐ½ÐºÑÐ¸Ð¸ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð Ð¢Ð¡ Ð½Ð°Ð³ÑÐµÐ²Ð°ÑÐµÐ»Ñ. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐµÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¾Ð½Ð½ÑÑ Ð¿ÐµÑÐµÑÐ¾Ð´Ð¾Ð² Ð½Ð° Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð¿Ð¾Ð»ÑÐ¸Ð·Ð¾Ð»Ð¸ÑÑÑÑÐµÐ¹ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸ GaAs(111)B Ð¿Ð¾Ð·Ð²Ð¾Ð»Ð¸Ð»Ð¾ Ð¾Ð¿ÑÐµÐ´ÐµÐ»Ð¸ÑÑ, ÑÑÐ¾ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ° ÑÐµÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÑÐ¾Ð´Ð° Ð¼ÐµÐ¶Ð´Ñ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸ÑÐ¼Ð¸ (2Ã2) Ð¸ (â19Ãâ19)R23.4Â° Ð½Ð°ÑÐ¾Ð´Ð¸ÑÑÑ Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ Ð¢S = 540â550Â°Ð¡ Ð¿ÑÐ¸ Ð´Ð¸Ð½Ð°Ð¼Ð¸ÑÐµÑÐºÐ¾Ð¼ ÑÐµÐ¶Ð¸Ð¼Ðµ ÑÐ¿ÑÑÐºÐ° ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸ ÑÐ¾ ÑÐºÐ¾ÑÐ¾ÑÑÑÑ 15 Â°C/Ð¼Ð¸Ð½ Ð¸ Ð¿Ð¾ÑÐ¾ÐºÐµ As Ð ÐÐÐ  = 10-5 ÐÐ°.
description: This thesis is devoted to developing of a method of the indirect temperature determination during the MBE growth. A detailed analysis of reconstruction transitions studied under various MBE conditions on the GaAs surface by reflection high-energy electron diffraction (RHEED) technique, as well as the MBE temperatures determined using a thermocouple and an IR pyrometer, shows that the difference between the real (TS) and measured (TTC, TPIR) temperature scan reach ~100â120Â°C for GaAs(001) and GaAs(111) B substrates. The developed method describes a set of reference points that can be used to create the calibration curves TTC/TPIR and TS as a function of the PTC heater power. The study of reconstruction transitions on the surface of a undoped GaAs(111)B substrate made it possible to determine that the temperature of the reconstruction transition between the (2Ã2) and (â19Ãâ19)R23.4Â° states is in the range Ð¢S = 540â550Â°Ð¡ at the dynamic mode of decreasing the substrate temperature at a rate of 15Â°C/min and a As flux of Ð ÐÐÐ  = 10-5 Pa.