title: ÐÐ»Ð¸ÑÐ½Ð¸Ðµ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð½Ð° ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ðµ Ð¿ÑÐ¾ÑÐµÑÑÑ Ð² ÑÑÑÑÐºÑÑÑÐ°Ñ Pd/Oxide/InP
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: The influence of hydrogen on physical processes in Pd/oxide/InP structures
Creators: name: Ð©ÑÐ»Ð¾ÐºÐ¾Ð², ÐÐµÐ½Ð¸Ð°Ð¼Ð¸Ð½
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: ÐÐ°Ð»Ð»Ð°Ð´Ð¸Ð¹
ÐÐ¾Ð´Ð¾ÑÐ¾Ð´
Ð¢ÑÐ³Ð¾Ð¿Ð»Ð°Ð²ÐºÐ¸Ðµ ÑÐ¾ÐµÐ´Ð¸Ð½ÐµÐ½Ð¸Ñ, Ð¾ÐºÑÐ¸Ð´Ñ
ÑÐ¾ÑÑÐ¸Ð´ Ð¸Ð½Ð´Ð¸Ñ
Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ðµ Ð¿ÑÐ¾Ð¿ÑÑÐºÐ°Ð½Ð¸Ðµ
Ð´ÐµÑÐ¾ÑÐ±ÑÐ¸Ñ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð°
ÑÐ°Ð±Ð¾ÑÐ° Ð²ÑÑ Ð¾Ð´Ð°
Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ½ÑÐµ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ñ
indium phosphide
optical transmission
hydrogen desorption
work function
surface states

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² ÑÑÑÑÐºÑÑÑÑ Pd/oxide/InP Ñ ÑÐµÐ»ÑÑ Ð²ÑÑÐ²Ð»ÐµÐ½Ð¸Ñ Ð²ÐºÐ»Ð°Ð´Ð° ÑÐ»Ð¾ÑÐ² Ð² Ð´ÐµÑÐµÐºÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð°. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¸ ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÑÑÑÑÐºÑÑÑÑ Pd/Oxide/InP ÐºÐ°Ðº Ð² ÑÐµÐ»Ð¾Ð¼, ÑÐ°Ðº Ð¸ Ð´Ð»Ñ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð³Ð¾, Ð¾ÐºÑÐ¸Ð´Ð½Ð¾Ð³Ð¾ Ð¸ Ð¼ÐµÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÐ»Ð¾ÑÐ². ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð½Ðµ ÑÐ¾Ð»ÑÐºÐ¾ Ð½Ð° ÑÑÑÑÐºÑÑÑÑ Pd/Oxide/InP, Ð½Ð¾ Ð¸ Ð¾ÑÐ´ÐµÐ»ÑÐ½Ð¾ Ð½Ð° ÑÐ»Ð¾Ð¸ ÐµÑ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÑÑÐ¸Ðµ. Ð£ÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð° Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½Ð°Ñ ÑÐ¾Ð»ÑÐ¸Ð½Ð° ÑÐ»Ð¾Ñ Ð¿Ð°Ð»Ð»Ð°Ð´Ð¸Ñ Ð´Ð»Ñ ÑÑÑÑÐºÑÑÑÑ. ÐÑÐ¾Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¾, ÑÑÐ¾ Ð´Ð»Ñ ÑÐ»Ð¾ÑÐ² ÑÐ¾Ð»ÑÐ¸Ð½Ð¾Ð¹ 30-37 Ð½Ð°Ð½Ð¾Ð¼ÐµÑÑÐ¾Ð² Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ðµ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ° Ð¿Ð¾Ð³Ð»Ð¾ÑÐµÐ½Ð¸Ñ Ð¼Ð°ÐºÑÐ¸Ð¼Ð°Ð»ÑÐ½Ð¾. Ð¢Ð°ÐºÐ¶Ðµ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ ÑÐ»Ð¾Ð¸, Ð¿ÑÐµÐ²ÑÑÐ°ÑÑÐ¸Ðµ ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð² 45 Ð½Ð¼, ÑÐ°ÑÑÑÐµÑÐºÐ¸Ð²Ð°ÑÑÑÑ, ÑÑÐ¾ Ð³Ð¾Ð²Ð¾ÑÐ¸Ñ Ð¾ Ð½ÐµÐ²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ÑÑÐ¸ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÐ°ÐºÐ¸Ñ ÑÐ»Ð¾ÑÐ² Ð² ÑÐµÐ½ÑÐ¾ÑÐ°Ñ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð°. Ð­ÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾ Ð´Ð¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ Ð²ÑÐµÐ¼Ñ Ð²Ð¾ÑÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¸Ñ ÑÐ¸Ð³Ð½Ð°Ð»Ð° ÑÐ¾ÑÐ¾ÑÐ´Ñ Ð² ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð¼ ÑÐµÐ½ÑÐ¾ÑÐµ Ð·Ð°Ð²Ð¸ÑÐ¸Ñ Ð¾Ñ ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð¿Ð»ÑÐ½ÐºÐ¸ Ð¿Ð°Ð»Ð»Ð°Ð´Ð¸Ñ. ÐÑÐ¸ ÑÐµÑÐ¼Ð¾Ð²Ð°ÐºÑÑÐ¼Ð½Ð¾Ð¼ Ð½Ð°Ð¿ÑÐ»ÐµÐ½Ð¸Ð¸ ÑÑÑÑÐºÑÑÑÐ° Ð¿Ð°Ð»Ð»Ð°Ð´Ð¸Ñ Ð¿Ð¾Ð»Ð¸ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ°Ñ. ÐÐµÐ¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½Ð¾ÑÑÑ Ð¸ ÑÐ°Ð·Ð½Ð¾Ð¾Ð±ÑÐ°Ð·Ð¸Ðµ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐ¾Ð² Ð½Ðµ Ð²Ð½Ð¾ÑÑÑ Ð¾ÑÑÑÐ¸Ð¼Ð¾Ð³Ð¾ Ð²ÐºÐ»Ð°Ð´Ð° Ð² ÑÐ°Ð±Ð¾ÑÑ ÑÑÑÑÐºÑÑÑÑ Pd/oxide/InP, ÐºÐ°Ðº Ð¾ÑÐ½Ð¾Ð²Ñ Ð´Ð»Ñ Ð´Ð°ÑÑÐ¸ÐºÐ° Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð°. Ð£ÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¾, ÑÑÐ¾ Ð²ÑÐµ Ð¾ÑÐ½Ð¾Ð²Ð½ÑÐµ Ð¿ÑÐ¾ÑÐµÑÑÑ Ð¿ÑÐ¸ Ð²Ð¾Ð·Ð´ÐµÐ¹ÑÑÐ²Ð¸Ð¸ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð¿ÑÐ¾Ð¸ÑÑÐ¾Ð´ÑÑ Ð² Ð¿Ð°Ð»Ð»Ð°Ð´Ð¸ÐµÐ²Ð¾Ð¼ ÑÐ»Ð¾Ðµ. ÐÐºÐ»Ð°Ð´ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ð¾Ð³Ð¾ Ð¸ Ð¾ÐºÑÐ¸Ð´Ð½Ð¾Ð³Ð¾ ÑÐ»Ð¾ÑÐ² Ð¼Ð¸Ð½Ð¸Ð¼Ð°Ð»ÐµÐ½.
description: This work is devoted to the study of the properties of the Pd/oxide/InP structure in order to identify the contribution of layers to the detection of hydrogen. In this work, we have studied the electrical and photovoltaic properties of the Pd/Oxide/InP structure in a bulk configuration as well as in thin layers (the semiconductor, oxide, and metal layers). Furthermore, we have investigated the influence of hydrogen on the entire layered structure and on each layer separately. Based on the measurements, the determination of palladium layer optimal thickness was achieved. It is demonstrated that for layers with a thickness of 30-37 nanometers, the change in the absorption coefficient is maximal. It is also shown that layers exceeding the thickness of 45 nm crack, which indicates that it is impossible to use such layers in hydrogen sensors. It is experimentally proved that the recovery time of the photovoltage signal in a photoelectric sensor depends on the thickness of the palladium film. In thermal vacuum spraying, the palladium structure is polycrystalline. The heterogeneity and diversity of the crystallites do not make a significant contribution to the Pd/oxide/InP structure, as the basis for the hydrogen sensor. Consequently, we have proven that all the main processes under the influence of hydrogen occure in the palladium layer of the structure. The contribution of the semiconductor and oxide layers is minimal.