cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Search for supersymmetry in pp collisions at sqrt(s) = 8 TeV in final states with boosted W bosons and b jets using razor variables
Creators: name: CMS Collaboration
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Experiment (hep-ex)
subject: FOS: Physical sciences

description: A search for supersymmetry in hadronic final states with highly boosted W bosons and b jets is presented, focusing on compressed scenarios. The search is performed using proton-proton collision data at a center-of-mass energy of 8 TeV, collected by the CMS experiment at the LHC, corresponding to an integrated luminosity of 19.7 inverse femtobarns. Events containing candidates for hadronic decays of boosted W bosons are identified using jet substructure techniques, and are analyzed using the razor variables M[R] and R^2, which characterize a possible signal as a peak on a smoothly falling background. The observed event yields in the signal regions are found to be consistent with the expected contributions from standard model processes, which are predicted using control samples in the data. The results are interpreted in terms of gluino-pair production followed by their exclusive decay into top squarks and top quarks. The analysis excludes gluino masses up to 1.1 TeV for light top squarks decaying solely to a charm quark and a neutralino, and up to 700 GeV for heavier top squarks decaying solely to a top quark and a neutralino.
description: Replaced with published version. All figures and tables can be found at http://cms-results.web.cern.ch/cms-results/public-results/publications/SUS-14-007/index.html
Rank 3 rigid representations of projective fundamental groups
Creators: name: Langer, Adrian
name: Simpson, Carlos
Publisher: name: arXiv
Year: 2016
Subjects: subject: Algebraic Geometry (math.AG)
subject: FOS: Mathematics
subject: 14F35 (primary), 14D06, 14D07, 14E20 (secondary)

description: Let X be a smooth complex projective variety with basepoint x. We prove that every rigid integral irreducible representation $π_1(X,x)\to SL (3,{\mathbb C})$ is of geometric origin, i.e., it comes from some family of smooth projective varieties. This partially generalizes an earlier result by K. Corlette and the second author in the rank 2 case and answers one of their questions.
description: v3, 49 pages; final version, to appear in Compositio Math
Influence of Gallium Doping Profile on Electrical Properties of Flexible CIGS Solar Cells
Creators: name: Severino, N.
name: Bednar, N.
name: Mereu, R.
name: Binetti, S.
name: Acciarri, M.
name: Gasparotto, A.
name: Adamovic, N.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1345-1348
description: In this work, we investigated, both numerically and experimentally, flexible Cu(In,Ga)Se2 (CIGS) thin
film solar cells grown using a hybrid sputtering/evaporation technique. In particular, the dependence of the solar cell
electrical properties on the amount of gallium (Ga) and its doping profile was observed. The correlation between the
Ga profile and the defects density inside the absorber layer was analyzed in order to investigate the possibility to
enhance the performances of the developed device. The Ga concentration across the active layer was measured using
secondary ion mass spectrometry (SIMS) and used as input for the simulations in order to understand and to propose
the best Ga profile to be used to enhance solar cell efficiency.
Optimization of Metallic Precursor Thickness Ratio for CIGS Solar Cell Prepared by Magnetron Sputtering Process
Creators: name: Gulkowski, S.
name: Krawczak, E.
name: Olchowik, J.M.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1330-1332
description: Sputtering deposition is one of the cost effective method of producing CIGS solar cell. The process can
be done in two steps. First one is the preparation of Cu-In-Ga precursor on SLG covered by 1μm Mo layer. In order
to obtain optimized atomic ratio of CIGS absorber the CuGa/In/Cu layers with different thickness ratio were
deposited by sequential sputtering of CuGa, In and CuSe targets. Different configuration of the layers deposition
were tested. The surface morphology as well as EDS analysis were investigated to find sufficient thickness and good
uniformity of the layers. The optimized thickness ratio of the metallic precursors was found. After this optimization
the precursor layer was covered with selenium deposited from Se target in sputtering process.
Effect of Se Flux on the Properties of Polycrystalline CuInSe2 Thin Films and Solar Cells
Creators: name: Islam, M.M.
name: Yamada, A.
name: Matsubara, K.
name: Niki, S.
name: Sakurai, T.
name: Akimoto, K.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1246-1248
description: Polycrystalline CuInSe2 thin films were deposited by three-stage evaporation method. During
growth of the films, Cu and In beam flux (measured as beam equivalent pressure, BEP) were kept
constant, while Se beam flux was varied to investigate the impact of Se flux on the structural and
electrical properties of the films. In general film-quality becomes better with increasing Se beam pressure
associated with larger grain size and better surface morphology. CuInSe2 crystal becomes more
(220)/(204) oriented with Se flux. With a decrease in the Se flux, resistivity of the CuInSe2 films
increases along with a decrease of majority hole carriers. This is probably due to formation of the Sevacancy
and/or vacancy complex. Effect of Se flux on the composition of the CuInSe2 materials has been
discussed. Solar cell performance was found to be strongly correlated to the Se flux condition during
deposition of the CuInSe2 absorber layer. Sufficient Se flux was found to be effective to reduce various
Se-deficiency related defect complexes and thereby to get better solar cell performances.
Effect of In-Situ Fluorine Doping on Electroplated Cadmium Telluride Thin Films for Photovoltaic Device Application
Creators: name: Ojo, A.
name: Dharmadasa, I.M.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1249-1255
description: Cadmium telluride (CdTe) thin films were electrodeposited on glass/fluorine-doped tin oxide (FTO) using a two electrode system from an acidic and aqueous solution containing 1.0M Cd(NO3)2·4H2O, low level of TeO2 solution and 500 ppm CdF2 as a dopant at pH=2.00±0.02. Photoelectrochemical (PEC) cell measurement, X-ray diffraction (XRD), Raman spectroscopy, optical absorption, atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to study the electrical, structural, optical, compositional and morphological properties of the as-grown and CdCl2 treated layers. The PEC cell measurements reveal that the as-grown, heat-treated and CdCl2 treated ED-CdTe layers were all n-type in electrical conductivity. The XRD study reveals that the ED-CdTe layers are polycrystalline in nature with preferential peak orientation along the (111) plane. The highest crystallinity was observed when grown at 1370 mV cathodic potential with reference to graphite electrode. Optical absorption reveals that the bandgap of the as-deposited, heat-treated and CdCl2 treated CdTe layers falls within the range (1.43-1.50) eV. The AFM images show homogeneous soft-bright colours after CdCl2 treatment for 15 minutes in air while the SEM micrographs show a fairly uniform coverage of the glass/FTO substrate. The growth procedure and characterisation of the CdTe layers will be presented in this paper.
Disordered Quivers and Cold Horizons
Creators: name: Anninos, Dionysios
name: Anous, Tarek
name: Denef, Frederik
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: We analyze the low temperature structure of a supersymmetric quiver quantum mechanics with randomized superpotential coefficients, treating them as quenched disorder. These theories describe features of the low energy dynamics of wrapped branes, which in large number backreact into extremal black holes. We show that the low temperature theory, in the limit of a large number of bifundamentals, exhibits a time reparametrization symmetry as well as a specific heat linear in the temperature. Both these features resemble the behavior of black hole horizons in the zero temperature limit. We demonstrate similarities between the low temperature physics of the random quiver model and a theory of large $N$ free fermions with random masses.
description: 25 pages, 1 figure, v2 minor changes references added, v3 typos corrected and minor changes to section 4
Mass-Produced 2D Nanophotonic Crystals for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells
Creators: name: Zhou, S.
name: He, J.
name: Yang, Z.
name: Yang, X.
name: Gao, P.
name: Ye, J.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
Silicon-based Thin Film and Silicon-Heterojunction Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1297-1300
description: We report a high throughput surface texturing process for photoelectric devices based on large-area selfassembly
of nanospheres via a low-cost micro-propulsive injection method. This process can readily reach a throughput
over 2500-3000 wafers/h, which is compatible with the high volume photovoltaic manufacturing, presenting a highly
versatile platform for the fabrication of periodic nanotexturing on device surface. Two-dimensional nanophotonic crystals,
i.e., nanopencils (NPs) and inverted-nanopyramids (INPs), are separately realized on the surface of crystalline silicon (c-
Si) film by using chemical etching on the mask of periodic nanosphere arrays. The top/rear-sided NPs/INPs surface
texturing on 20 μm c-Si thin film substrate results in the absorption nearly approaching the Lambertian limit over a broad
wavelength ranging of 375-1000 nm and even surpassing this limit beyond 1000 nm. The proposed surface texturing
schemes combine excellent antireflective and light-trapping properties with an inherent low parasitic surface area, a
negligible surface damage, and a good compatibility for subsequent process steps, making them good alternatives for
high performance c-Si thin film solar cells (TFSCs).
Growth of Cu2ZnSn(S1-X, SeX)4 Films by Selenization of Cu-Zn-Sn-S Precursors------ Effects of the Selenization Time
Creators: name: Sun, R.
name: Zhuang, D.-M.
name: Zhao, M.
name: Xie, M.
name: Ouyang, L.
name: Guo, L.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1232-1234
description: A simple and short fabrication method of Cu2ZnSn(S, Se)4 (CZTSSe) films was proposed by the sputtering of a CZTS quaternary target followed by a subsequent selenization process. Selenization process of Se atoms replacement for S atoms in CZTS precursors with selenization time from 5min to 60 min was investigated. It has been found that Se ratio in CZTSSe increases and the ratio of S/(S+Se) exponentially decreases with the increase of selenization time. 67% of S atoms are substituted by Se atoms after 5 min of selenization. As selenization time is up to 30 min, the selenized films are composed of CZTSe phase. With selenization process going on, Sn-loss results in a Cu-rich film and appearance of Cu2-xSe, which causes the decrease of resistivity of CZTSSe films.
On the dynamics of a non-local parabolic equation arising from the Gierer-Meinhardt system
Creators: name: Kavallaris, Nikos I.
name: Suzuki, Takashi
Publisher: name: arXiv
Year: 2016
Subjects: subject: Analysis of PDEs (math.AP)
subject: FOS: Mathematics

description: The purpose of the current paper is to contribute to the comprehension of the dynamics of the shadow system of an activator-inhibitor system known as a Gierer-Meinhardt model. Shadow systems are intended to work as an intermediate step between single equations and reaction-diffusion systems. In the case where the inhibitor's response to the activator's growth is rather weak, then the shadow system of the Gierer-Meinhardt model is reduced to a single though non-local equation whose dynamics will be investigated. We mainly focus on the derivation of blow-up results for this non-local equation which can be seen as instability patterns of the shadow system. In particular, a {\it diffusion driven instability (DDI)}, or {\it Turing instability}, in the neighbourhood of a constant stationary solution, which it is destabilised via diffusion-driven blow-up, is obtained. The latter actually indicates the formation of some unstable patterns, whilst some stability results of global-in-time solutions towards non-constant steady states guarantee the occurrence of some stable patterns.
description: 31 pages
Improvement of CIGSSe Module Performance by Systematic Optimization of the Si3N4 Barrier Coating and Controlled Na Doping from Rotatable Mo:Na Targets
Creators: name: Alberts, V.
name: Bonthuys, G.
name: Van Den Heever, S.
name: Arendse, H.
name: Roux, M.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1262-1265
description: In this study, the layer properties of Si3N4 diffusion barrier coatings and sodium doped Mo back
contact films (MoNa) were optimized in an in-line vertical sputter coating system (V900), using rotatable
magnetrons. The barrier layer sputter conditions were optimized to ensure the uniform and efficient blocking of
sodium and/or other impurities from the soda-lime glass substrates. The sputtering conditions of the molybdenum
back contact layers were optimized to ensure that the seed layer exhibited compressive strain and the bulk layer
tensile strain, respectively. The thickness of the Mo seed layer (sputtered from MoNa10 rotatable target) was used to
introduced controlled concentrations of Na into a substantially homogeneous Cu(In0.75Ga0.25)(Se0.9S0.1)2 absorber film.
The relative Na concentration within the CIGSSe absorber films was evaluated with SIMS and the structural features
with SEM and GIXRD. The electrical characteristics of devices were evaluated in detail in order to determine
optimum level of Na incorporation into the CIGSSe films. The respective experiments were conducted under realistic
commercial production conditions with the aim to demonstrate a substantial improvement in the average module
efficiency, yield and throughput during the manufacturing process.
Cu(in,Ga)Se2 Solar Cell with High Efficiency Beyond 16% Achieved by Sputtering from a Copper-Poor Quaternary Target
Creators: name: Ouyang, L.
name: Zhuang, D.
name: Zhao, M.
name: Sun, R.
name: Guo, L.
name: Cao, M.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1219-1221
description: Copper Indium Gallium Selenide (Cu(In,Ga)Se2, CIGS) absorbers and related devices with different
copper contents were prepared by sputtering from two quaternary CIGS targets with different copper contents. The
copper content has large influence on the structures and morphologies of the CIGS absorbers. Residual Cu-Se phase
is observed in the stoichiometric absorber and copper-poor ordered vacant compounds (OVC) is observed in the
copper-poor absorber. Residual Cu-Se phase improves the mass transport in the films under high temperature
annealing, which leads to a larger grain size. For the stoichiometric device, the main recombination mechanism is
band to band (BB) mechanism. While for the copper-poor device, the main recombination routes are related with
OVC and donor-acceptor pairs (DAP) in CIGS absorbers. Residual Cu-Se in the stoichiometric absorbers composes
shunt paths in the CIGS devices and the shunt resistance is lower, which causes a lower fill factor. OVC on the
copper-poor absorber surface is beneficial to decrease the interface recombination between CIGS and CdS, therefore,
the diode quality and the reversed saturation current density are lower, which causes a higher fill factor and open
circuit voltage. The average efficiency of the stoichiometric devices is 10.0%, by decreasing the copper content in the
absorber using a copper-poor CIGS target, the average efficiency is largely improved to 16.1%.
The optical/UV excess of X-ray dim isolated neutron star: I. bremsstrahlung emission from a strangeon star plasma atmosphere
Creators: name: Wang, Weiyang
name: Lu, Jiguang
name: Tong, Hao
name: Ge, Mingyu
name: Li, Zhaosheng
name: Men, Yunpeng
name: Xu, Renxin
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Astrophysical Phenomena (astro-ph.HE)
subject: FOS: Physical sciences

description: X-ray dim isolated neutron stars (XDINSs) are characterized by Planckian spectra in X-ray bands, but show optical/ultraviolet(UV) excesses which are the measured photometry exceeding that is extrapolated from X-ray spectra. To solve this problem, a radiative model of bremsstrahlung emission from a plasma atmosphere is established in the regime of strangeon star. A strangeon star atmosphere could simply be regarded as the upper layer of a normal neutron star. This plasma atmosphere, formed and maintained by the ISM-accreted matter due to the so-called strangeness barrier, is supposed to be of two-temperature. All the seven XDINS spectra could be well fitted by the radiative model, from optical/UV to X-ray bands. The fitted radiation radii of XDINSs are from 7 to 13km, while the modelled electron temperatures are between 50 and 250eV, except RX J0806.4-4123 with a radiation radius ~3.5km, indicating that this source could be a low-mass strangeon star candidate. This strangeon star model could further be tested by soft X-ray polarimetry, such as the Lightweight Asymmetry and Magnetism Probe which is expected to work on Chinese space station around 2020.
description: 10 pages, 7 figures, ApJ submitted
Tailoring the Thickness of MoSe2 Layer for High Performance CZTSe and CZTSSe Solar Cells by a Soft Pre-Alloying Process
Creators: name: Li, J.
name: Zhang, Y.
name: Nam, D.
name: Cheong, H.
name: Sun, Y.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1222-1227
description: Recently, earth abundant absorber materials Cu2ZnSn(S,Se)4 (CZTSSe), have received increasing attention as an alternative absorber for thin film solar cells. However, the over thick MoSe2 or MoS2 interfacial layer is currently a serious and prevalent problem in CZTSSe solar cells especially fabricated by post annealing approaches. In this work, the formation of MoSe2 layer has been controlled successfully by a soft pre-alloying process carried out on the sputtered metal precursors. The series resistance of the CZTSe solar cell is reduced from about 3.0 Ω cm2 to near 0.5 Ω cm2. In accordance, the performance of CZTSe and CZTSSe solar cells is improved significantly.
Space-time symmetric extension of non-relativistic quantum mechanics
Creators: name: Dias, Eduardo O.
name: Parisio, Fernando
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: In quantum theory we refer to the probability of finding a particle between positions $x$ and $x+dx$ at the instant $t$, although we have no capacity of predicting exactly when the detection occurs. In this work, first we present an extended non-relativistic quantum formalism where space and time play equivalent roles. It leads to the probability of finding a particle between $x$ and $x+dx$ during [$t$,$t+dt$]. Then, we find a Schrödinger-like equation for a "mirror" wave function $ϕ(t,x)$ associated with the probability of measuring the system between $t$ and $t+dt$, given that detection occurs at $x$. In this framework, it is shown that energy measurements of a stationary state display a non-zero dispersion, and that energy-time uncertainty arises from first principles. We show that a central result on arrival time, obtained through approaches that resort to {\it ad hoc} assumptions, is a natural, built-in part of the formalism presented here.
description: 6 pages
Scalings and Limits of Landau-deGennes Models for Liquid Crystals: A Comment on Some Recent Analytical Papers
Creators: name: Gartland, Eugene C.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Soft Condensed Matter (cond-mat.soft)
subject: FOS: Physical sciences

description: Some recent analytical papers have explored limiting behaviors of Landau-deGennes models for liquid crystals in certain extreme ranges of the model parameters: limits of "vanishing elasticity" (in the language of some of these papers) and "low-temperature limits." We use simple scaling analysis to show that these limits are properly interpreted as limits in which geometric length scales (such as the size of the domain containing the liquid crystal material) become large compared to intrinsic length scales (such as correlation lengths or coherence lengths, which determine defect core sizes). This represents the natural passage from a mesoscopic model to a macroscopic model and is analogous to a "London limit" in the Ginzburg-Landau theory of superconductivity or a "large-body limit" in the Landau-Lifshitz theory of ferromagnetism. Known relevant length scales in these parameter regimes (nematic correlation length, biaxial coherence length) can be seen to emerge via balances in equilibrium Euler-Lagrange equations associated with well-scaled Landau-deGennes free-energy functionals.
description: 17 pages; no figures; uses Springer journal LaTeX class file svjour3.cls; uses LaTeX packages mathptmx, amsmath, amssymb, and mathtools. Version 'v2' is an update of the note originally posted Dec 2015. The main change (based upon feedback on the earlier note) is to add consideration of the "low temperature" limit (and to illustrate its relationship to the "large body" limit already discussed)
The spectrum on $p$-forms of a lens space
Creators: name: Lauret, Emilio A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Differential Geometry (math.DG)
subject: Representation Theory (math.RT)
subject: Spectral Theory (math.SP)
subject: FOS: Mathematics
subject: 58J50, 58J53

description: We give an explicit description of the spectrum of the Hodge--Laplace operator on $p$-forms of an arbitrary lens space for any $p$. We write the two generating functions encoding the $p$-spectrum as rational functions. As a consequence, we prove a geometric characterization of lens spaces that are $p$-isospectral for every $p$ in an interval of the form $[0,p_0]$.
description: Accepted in Geom. Dedicata, February 2018
A Simple Method to Make a Non-Etching Stable Back Contact for CdTe Solar Cells without Using Copper
Creators: name: Krishnakumar, V.
name: Siepchen, B.
name: Späth, B.
name: Drost, C.
name: Kraft, C.
name: Jaegermann, W.
name: Nonnenmacher, H.-J.
name: Peng, S.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1228-1231
description: The classical CdTe solar cell back contact formation procedure generally requires CdTe surface treatment such as chemical etching or CdTe surface doping using Cu compounds before depositing metal back contact to overcome Schottky barrier formation. In this manuscript, we present a simple procedure which can help to produce a back contact without etching and using copper. After the CdCl2 activation process, methanolic SbCl3 solution was applied onto the CdTe surface and subsequently heat treated for very short time. The X-ray photo electron spectroscopy measurements indicate the formation of a thin Sb2Te3 interlayer on the CdTe. The SbCl3 based back contact yields solar cell performance comparable to the reference cell prepared with nitric-phosphoric acid etching procedure. In general, the SbCl3 based solar cells show strong roll-over phenomena. In addition to the Sb2Te3 interlayer formation, the formation of complex native oxides might limit the free carrier concentration in the interlayer and might be responsible for the roll-over phenomena. Improved SbCl3 solution application on CdTe surface and optimized thermal treatment can probably yield higher efficiency solar cells than the reference cell.
A strongly robust Weyl fermion semimetal state in Ta$_{3}$S$_{2}$
Creators: name: Chang, Guoqing
name: Xu, Su-Yang
name: Sanchez, Daniel S.
name: Huang, Shin-Ming
name: Lee, Chi-Cheng
name: Chang, Tay-Rong
name: Zheng, Hao
name: Bian, Guang
name: Belopolski, Ilya
name: Alidoust, Nasser
name: Jeng, Horng-Tay
name: Bansil, Arun
name: Lin, Hsin
name: Hasan, M. Zahid
Publisher: name: arXiv
Year: 2015
Subjects: subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: Weyl semimetals are extremely interesting. Although the first Weyl semimetal was recently discovered in TaAs, research progress is still significantly hindered due to the lack of robust and ideal materials candidates. In order to observe the many predicted exotic phenomena that arise from Weyl fermions, it is of critical importance to find robust and ideal Weyl semimetals, which have fewer Weyl nodes and more importantly whose Weyl nodes are well separated in momentum space and are located close to the chemical potential in energy. In this paper, we propose by far the most robust and ideal Weyl semimetal candidate in the inversion breaking, single crystalline compound tantalum sulfide Ta$_3$S$_2$ with new and novel properties beyond TaAs. We find that Ta$_3$S$_2$ has only 8 Weyl nodes, all of which have the same energy that is merely 10 meV below the chemical potential. Crucially, our results show that Ta$_3$S$_2$ has the largest $k$-space separation between Weyl nodes among known Weyl semimetal candidates, which is about twice larger than TaAs and twenty times larger than the predicted value in WTe$_2$. Moreover, we predict that increasing the lattice by $<4\%$ can annihilate all Weyl nodes, driving a novel topological metal-to-insulator transition from a Weyl semimetal state to a topological insulator state. We further discover that changing the lattice constant can move the Weyl nodes and the van Hove singularities with enhanced density of states to the chemical potential. Our prediction provides a critically needed robust candidate for this rapidly developing field. The well separated Weyl nodes, the topological metal-to-insulator transition and the remarkable tunabilities suggest Ta$_3$S$_2$'s potential as the ideal platform in future device-applications based on Weyl semimetals.
description: 25 pages, 6 figures
Nanostructured Hybrid of Photovoltaic Solar Cell and Supercapacitor
Creators: name: Eminov, Sh.O.
name: Tagiyev, D.B.
name: Aliyev, A.Sh.
name: Jalilova, Kh.D.
name: Hasanov, I.
name: Ismayilov, N.J.
name: Rajabli, A.A.
name: Mamedova, G.
name: Guliyev, J.
name: Gurbanov, I.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1235-1237
description: The construction of the novel hybrid device comprises photovoltaic PV-cell and nanocapacitor which
disposed on front and back sides on common glass substrate as well as the flow chart of the device’s fabrication
procedures are presented. In order to realize the proposed device the anodic aluminum oxidation (AAO ) nanostructures
on basis of glass/ indium tin oxide (ITO)/Ti/Al thin film structure were synthesized. The method of electrochemical
deposition of CdS thin film on ITO covered glass substrates was developed. The optical microphotograph, SEM imaging,
EDX spectra, optical transmission and Raman scattering data are presented.
Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide
Creators: name: Booth, Jamie M
name: Drumm, Daniel W.
name: Casey, Phil S.
name: Seeber, Aaron J.
name: Bhargava, Suresh K.
name: Russo, Salvy P.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.
description: 11 Pages, 8 Figures
Correcting Temperature-Dependent Efficiency Model for Commercial Double Junction Thin Film Silicon Modules
Creators: name: Locatelli, L.
name: Narayan, N.
name: Battaglia, A.
name: Canino, A.
name: Gerardi, C.
name: Isabella, O.
name: Zeman, M.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
Silicon-based Thin Film and Silicon-Heterojunction Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1181-1184
description: The prediction of energy yield of photovoltaic modules is essential for avoiding energy losses and
for marketing purposes. Temperature is one of the most critical factors that influence the efficiency swing of the
modules under real-life conditions. Experiments show that the temperature-dependent efficiency model based on
conversion efficiency temperature coefficient is inadequate for single and multi-junction modules based on thinfilm
silicon technology. Due to the Staebler-Wronski effect, the efficiency depends not only on the temperature
at the instant of the measurement but also on the operating temperature history of the module. Here we indicate
the module’s stabilized efficiency (s) as a meaningful factor for correcting the temperature-dependent efficiency
model.
Morphology and Phase Evolution of Cu2ZnSnS4 during Preheat Treatment and Sulfurization
Creators: name: Tan, J.
name: Wu, L.
name: Tan, K.
name: Lin, P.
name: Wang, G.
name: Jin, S.
name: Lin, Y.
name: Ikeda, S.
name: Matsumura, M.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1198-1202
description: Cu2ZnSnS4 (CZTS) is one of the promising materials for low cost thin film solar cells. But some detrimental problems still exist in the absorption layer induced by sulfurization process. Preheat treatment is an effective solution to the problems. However, the positive action mechanism of the preheating is still not clear. To obtain a high quality CZTS absorber, the study of microstructure and phase evolution during preheating and sulfurization is necessary. A Cu/Sn/Zn metallic precursor is obtained by successive electrodeposition, then followed by preheating and sulfurization. To study the morphology and phase evolution, a time-resolved preheating and sulfurization investigation were carried out. The preheated and sulfurized samples were taken at different growth duration, characterized by XRD, SEM and Raman.
The formation of stable intermediate alloys, mainly Cu6Sn5 and Cu5Zn8, are detected during preheating process. The alloys could largely help to form single crystal CZTS with large grain. The final films exhibit good adhesion to Mo substrate, no voids or pores, uniform grain size, and no secondary or ternary compounds. Moreover, the preheating process is available to reduce copper and sulfide diffusion and tin evaporation during the volume expansion and restructuring of precursors, and induce to form much more homogenous CZTS thin film.
Adaptation of a Crystalline Silicon Solar Cell Laboratory to Produce Perovskite Solar Devices
Creators: name: Ocaña, L.
name: Linares, A.
name: Llarena, E.
name: Montes, C.
name: González, O.
name: Molina, D.
name: Pío, A.
name: Quinto, C.
name: Friend, M.
name: Cendagorta, M.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
Perovskites, Organic PV and Hybrid Devices

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1138-1143
description: Instituto Tecnológico y de Energías Renovables, S.A. (ITER) continues to research on ways to optimize standard manufacturing processes for photovoltaic devices, taking the advantage of the acquired core competences, as well as the available facilities such as the solar cell laboratory, in order to extend its capabilities over solar cells based on perovskite structures, due to its growing trend in photo conversion efficiency in the last five years. Thus, efforts were focused on extending the know-how on hot and emerging topics such as perovskite solar devices, so as to reduce the inherent costs by using the in house equipment as much as possible. A perovskite state of art assessment, as well as a market study, was performed in order to estimate the cost for adopting a device architecture type, together with its fabrication ones, by taking into account the modification of the already available equipment, the acquisition of essential ones, as well as the required fungible. Experimental procedures were performed aiming to evaluate the degree of adaptation of the laboratory from the fabrication to the characterization of the fully finished devices.
Mechanical dissipation by substrate-mode coupling in SiN resonators
Creators: name: de Jong, Matthijs H. J.
name: Wolde, Malte A. ten
name: Cupertino, Andrea
name: Gröblacher, Simon
name: Steeneken, Peter G.
name: Norte, Richard A.
Publisher: name: arXiv
Year: 2022
Subjects: subject: Applied Physics (physics.app-ph)
subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: State-of-the-art nanomechanical resonators are heralded as a central component for next-generation clocks, filters, resonant sensors and quantum technologies. To practically build these technologies will require monolithic integration of microchips, resonators and readout systems. While it is widely seen that mounting microchip substrates into a system can greatly impact the performance of high-Q resonators, a systematic study has remained elusive, owing to the variety of physical processes and factors that influence the dissipation. Here, we analytically analyze a mechanism by which substrates couple to resonators manufactured on them, and experimentally demonstrate that this coupling can increase the mechanical dissipation of nanomechanical resonators when the resonance frequencies of resonator and substrate coincide. More generally, we then show a similar coupling mechanism can exist between two adjacent resonators. Since the substrate-mode coupling mechanism strongly depends on both the resonator position on the substrate and the mounting of the substrate, this work provides key design guidelines for high-precision nanomechanical technologies.
Monolithic Interconnection of Silicon Based Thin-Film Solar Cells on Aluminium Substrates
Creators: name: Schweitzer, A.
name: Geißendörfer, S.
name: Siepmann, O.
name: Sergeev, O.
name: Vehse, M.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
Silicon-based Thin Film and Silicon-Heterojunction Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1157-1160
description: The joint project “Silicon based thin-film solar cells on flexible metal substrates” (acronym “SiSoFlex”) is funded as part of the Photovoltaics Innovation Alliance by the German Federal Ministry of Education and Research. The objectives are the development of novel silicon based solar cell concepts on flexible aluminium substrates and the monolithic interconnection of module stripes which is a well-established technology for silicon thin-film solar cell (STFSC) on glass substrates. In this paper P1, P2, and P3 scribes in respect of ablations of back contact, amorphous silicon and front contact are investigated using picosecond laser. The used wavelengths are 532 nm and 1064 nm with pulse duration of 8.5 ps. The laser beam is guided with a galvo-head scanner across the substrate. Laser power, scanner speed, type of beam-passing and focus position are varied in a wide range to determine optimized results of selective layer ablation. Because of this research, the technology of monolithic interconnected modules is successfully transferred from glass to opaque metal substrates and validated due to modules on 10 cm x 10 cm aluminium substrates. In summary, the performance of the developed module technology shows no significant deterioration in comparison to lab-scaled solar cells with an active area of 0.64 cm².
Optical Modeling of Organic Solar Cells Deposited on Substrates Structured by Direct Laser Interference Patterning
Creators: name: Soldera, M.
name: Taretto, K.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
Perovskites, Organic PV and Hybrid Devices

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1118-1121
description: Optical modeling of solar cells is a powerful tool to test novel light trapping designs and to calculate light absorption and photocurrent enhancement. We use the finite element method to model state-of-the-art organic solar cells based on the small molecule donor material DCV5T-Me deposited on structured substrates with periodic triangular and sinusoidal profiles. These patterns can be fabricated by direct ablation of the polyethylene terephthalate (PET) substrate using direct laser interference patterning (DLIP). This technique is a fast, single step process which can be easily scaled to industrial standards. We use four model parameters, which are the structure aspect ratio (defined as the height to period ratio), the pattern period, and the thicknesses of two optical spacers. The periodic pattern parameters were varied within the processing capabilities of DLIP. The results show that the photocurrent can be increased from 14 mA/cm2 in the flat device to 17.6 mA/cm2 in a triangular patterned cell, representing a relative increase of 25%. The photocurrent delivered by sinusoidal patterned cells is maximized at an aspect ratio of 0.13, and periods between 0.5 μm and 1 μm, reaching a 20% higher photocurrent than the flat cell.
Pressure-induced commensurate stacking of graphene on boron nitride
Creators: name: Yankowitz, Matthew
name: Watanabe, K.
name: Taniguchi, T.
name: San-Jose, Pablo
name: LeRoy, Brian J.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: Combining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighboring layers, most easily controlled through their interlayer separation, can have significant influence on the electronic properties of these composite materials. Here, we demonstrate unprecedented control over interlayer interactions by locally modifying the interlayer separation between graphene and boron nitride, which we achieve by applying pressure with a scanning tunneling microscopy tip. For the special case of aligned or nearly-aligned graphene on boron nitride, the graphene lattice can stretch and compress locally to compensate for the slight lattice mismatch between the two materials. We find that modifying the interlayer separation directly tunes the lattice strain and induces commensurate stacking underneath the tip. Our results motivate future studies tailoring the electronic properties of van der Waals heterostructures by controlling the interlayer separation of the entire device using hydrostatic pressure.
description: 17 pages, 4 figures and supplementary information. Updated to published version
Inelastic Magnon Scattering
Creators: name: Koch, Robert de Mello
name: van Zyl, Hendrik J. R.
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: We study the worldsheet S-matrix of a string attached to a D-brane in AdS$_5\times$S$^5$. The D-brane is either a giant graviton or a dual giant graviton. In the gauge theory, the operators we consider belong to the $su(2|3)$ sector of the theory. Magnon excitations of open strings can exhibit both elastic (when magnons in the bulk of the string scatter) and inelastic (when magnons at the endpoint of an open string participate) scattering. Both of these $S$-matrices are determined (up to an overall phase) by the $su(2|2)^2$ global symmetry of the theory. In this note we study the $S$-matrix for inelastic scattering. We show that it exhibits poles corresponding to boundstates of bulk and boundary magnons. A crossing equation is derived for the overall phase. It reproduces the crossing equation for maximal giant gravitons, in the appropriate limit. Finally, scattering in the $su(2)$ sector is computed to two loops. This two loop result, which determines the overall phase to two loops, will be useful when a unique solution to the crossing equation is to be selected.
description: 10+1 pages; v2: small typos corrected
Interstellar scintillations of PSR B1919+21: space-ground interferometry
Creators: name: Shishov, V. I.
name: Smirnova, T. V.
name: Gwinn, C. R.
name: Andrianov, A. S.
name: Popov, M. V.
name: Rudnitskiy, A. G.
name: Soglasnov, V. A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Solar and Stellar Astrophysics (astro-ph.SR)
subject: High Energy Astrophysical Phenomena (astro-ph.HE)
subject: Instrumentation and Methods for Astrophysics (astro-ph.IM)
subject: FOS: Physical sciences

description: We carried out observations of pulsar PSR B1919+21 at 324 MHz to study the distribution of interstellar plasma in the direction of this pulsar. We used the RadioAstron (RA) space radiotelescope together with two ground telescopes: Westerbork (WB) and Green Bank (GB). The maximum baseline projection for the space-ground interferometer was about 60000 km. We show that interstellar scintillation of this pulsar consists of two components: diffractive scintillations from inhomogeneities in a layer of turbulent plasma at a distance $z_{1} = 440$ pc from the observer or homogeneously distributed scattering material to pulsar; and weak scintillations from a screen located near the observer at $z_{2} = 0.14 \pm 0.05$ pc. Furthermore, in the direction to the pulsar we detected a prism that deflects radiation, leading to a shift of observed source position. We show that the influence of the ionosphere can be ignored for the space-ground baseline. Analysis of the spatial coherence function for the space-ground baseline (RA-GB) yielded the scattering angle in the observer plane: $θ_{scat}$ = 0.7 mas. An analysis of the time-frequency correlation function for weak scintillations yielded the angle of refraction in the direction to the pulsar: $θ_{ref, 0}$ = 110 ms and the distance to the prism $z_{prism} \le 2$ pc.
Polyaniline-Graphene Nanocomposite as a Buffer Layer for Organic PV Device
Creators: name: Omelchenko, O.D.
name: Gribkova, O.L.
name: Tameev, A.R.
name: Vannikov, A.V.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
Perovskites, Organic PV and Hybrid Devices

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1122-1124
description: Polymer nanocomposites based on polyaniline (PANI) complex with polysulfonic acid and graphene were successfully created. Tuning of both the uniformity of the distribution and size of graphene stacks in the PANI complex matrix was performed by thorough selection of graphene of different degree of oxidation. Thin films of the nanocomposites were tested as a buffer layer in organic PV cells. PV cells with the nanocomposite layer demonstrated the enhanced characteristics compared to those with the layer of graphene free PANI-polyacid complex. The power conversion efficiency increased by 37%. The result is explained taking into account the formation of large graphene stacks which define both the surface roughness of the buffer layer and the high conductivity of the buffer layer in the direction perpendicular to its surface.
Unified Description for Network Information Hiding Methods
Creators: name: Wendzel, Steffen
name: Mazurczyk, Wojciech
name: Zander, Sebastian
Publisher: name: arXiv
Year: 2015
Subjects: subject: Cryptography and Security (cs.CR)
subject: FOS: Computer and information sciences

description: Until now hiding methods in network steganography have been described in arbitrary ways, making them difficult to compare. For instance, some publications describe classical channel characteristics, such as robustness and bandwidth, while others describe the embedding of hidden information. We introduce the first unified description of hiding methods in network steganography. Our description method is based on a comprehensive analysis of the existing publications in the domain. When our description method is applied by the research community, future publications will be easier to categorize, compare and extend. Our method can also serve as a basis to evaluate the novelty of hiding methods proposed in the future.
description: 24 pages, 7 figures, 1 table; currently under review
Kelvin Probe Force Microscopy Study of Electric Field Homogeneity in Epitaxial Silicon Solar Cells Cross-Section
Creators: name: Narchi, P.
name: Picardi, G.
name: Cariou, R.
name: Foldyna, M.
name: Prod'homme, P.
name: Roca I Cabarrocas, P.
Publisher: name: WIP
Year: 2015
Subjects: THIN FILM SOLAR CELLS AND MODULES
Silicon-based Thin Film and Silicon-Heterojunction Solar Cells and Modules

description: 31st European Photovoltaic Solar Energy Conference and Exhibition; 1026-1029
description: Using Kelvin probe force microscopy, cross-section measurements along the PIN junction of an epitaxial
silicon solar cell were performed under operating conditions (illumination, voltage bias). Surface potential profiles
show coherent behaviors with theoretical expectations when the device is under increasing illumination intensity,
increasing voltage bias, or under illumination at different wavelengths. Using measurements under voltage bias, we
propose a methodology to investigate the electric field homogeneity along the PIN junction. It is shown that the
electric field is not homogeneous for the cell measured and it is suggested that this might be due either to preparation
steps or to inhomogeneous defective layer along the PIN junction.