title: ÐÐ°Ð½Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÐµ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐµ ÑÐ»Ð¾Ð¸ ÑÑÐ¾ÑÐ¸Ð´Ð¾Ð² Ð½Ð° ÐºÑÐµÐ¼Ð½Ð¸Ð¸ Ð´Ð»Ñ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð² 2D-ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Nanoscale epitaxial layers of fluorides on silicon for 2D-electronics devices
Creators: name: ÐÐ²Ð°Ð½Ð¾Ð², ÐÐ»ÑÑ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð¤ÑÐ¾ÑÐ¸Ð´Ñ
ÐÐ¸ÑÑÐ°ÐºÑÐ¸Ñ
Ð­Ð»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ°
Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð»ÑÑÐµÐ²Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð±ÑÑÑÑÑÐµ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ñ
Ð°ÑÐ¾Ð¼Ð½Ð¾-ÑÐ¸Ð»Ð¾Ð²Ð°Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
Ð²Ð¾Ð»ÑÑ-Ð°Ð¼Ð¿ÐµÑÐ½ÑÐµ Ñ Ð°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸
Ð²Ð¾Ð»ÑÑ-ÑÐ°ÑÐ°Ð´Ð½ÑÐµ Ñ Ð°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸
molecular beam epitaxy
fast electrons
no-force microscopy
current-voltage characteristics
capacitance-voltage characteristics

description: Ð Ð°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÐ¾Ð½ÐºÐ¸Ñ ÑÐ»Ð¾ÐµÐ² ÑÑÐ¾ÑÐ¸Ð´Ð¾Ð², Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÑ Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ°Ñ Si(111) Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸. Ð­Ð¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐµ ÑÐ»Ð¾Ð¸ ÑÑÐ¾ÑÐ¸Ð´Ð¾Ð² ÑÐ²Ð»ÑÑÑÑÑ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½ÑÐ¼ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð¼ Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ Ð¿Ð¾Ð´Ð·Ð°ÑÐ²Ð¾ÑÐ½Ð¾Ð³Ð¾ Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÐºÐ° Ð² ÐÐÐ-ÑÑÐ°Ð½Ð·Ð¸ÑÑÐ¾ÑÐ°Ñ Ð½Ð¾Ð²Ð¾Ð³Ð¾ Ð¿Ð¾ÐºÐ¾Ð»ÐµÐ½Ð¸Ñ, Ñ ÐºÐ°Ð½Ð°Ð»Ð¾Ð¼ Ð¸Ð· 2D-Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð°. Ð¦ÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐµÑÑÑ Ð¸Ð·ÑÑÐµÐ½Ð¸Ðµ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼Ð¾Ð² ÑÐ¾ÑÑÐ° ÑÑÐ¾ÑÐ¸Ð´Ð¾Ð² (CaF2, MgxCa1-xF2) Ð½Ð° ÐºÑÐµÐ¼Ð½Ð¸Ð¸ (111) Ð¸ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ðµ ÑÐ»ÐµÐºÑÑÐ¾ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº ÑÑÑÑÐºÑÑÑ Au/2 Ð½Ð¼ CaF2/n-Si(111). Ð ÑÐ°Ð±Ð¾ÑÐµ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð»Ð¸ÑÑ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÐµ Ð¼ÐµÑÐ¾Ð´Ð¸ÐºÐ¸: Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ñ Ð±ÑÑÑÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð², Ð°ÑÐ¾Ð¼Ð½Ð¾-ÑÐ¸Ð»Ð¾Ð²Ð°Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ, Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ðµ Ð²Ð¾Ð»ÑÑ-Ð°Ð¼Ð¿ÐµÑÐ½ÑÑ Ð¸ Ð²Ð¾Ð»ÑÑ-ÑÐ°ÑÐ°Ð´Ð½ÑÑ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº. ÐÑÐ»Ð¾ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½Ð¾Ð¹ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ¾Ð¹ Ð´Ð»Ñ ÑÐ¾ÑÑÐ° CaF2 Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐ¼ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸ÐµÐ¼ ÑÐ¸Ð¿Ð°-Ð ÑÐ²Ð»ÑÐµÑÑÑ 150 â 300Â°Ð¡. MgF2 ÑÐ²Ð»ÑÐµÑÑÑ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½Ð¾-Ð°ÐºÑÐ¸Ð²Ð½ÑÐ¼ Ð²ÐµÑÐµÑÑÐ²Ð¾Ð¼, ÐºÐ¾ÑÐ¾ÑÑÐ¹ ÑÐ¿Ð¾ÑÐ¾Ð±ÑÑÐ²ÑÐµÑ Ð¿Ð¾ÑÐ»Ð¾Ð¹Ð½Ð¾Ð¼Ñ ÑÐ¾ÑÑÑ CaF2, ÑÑÐ¾, Ð¿ÑÐµÐ´Ð¿Ð¾Ð»Ð°Ð³Ð°ÐµÑÑÑ, Ð¼Ð¾Ð¶ÐµÑ Ð¿ÑÐ¸Ð²ÐµÑÑÐ¸ Ðº ÑÐ¼ÐµÐ½ÑÑÐµÐ½Ð¸Ñ ÑÐ»ÑÐºÑÑÐ°ÑÐ¸Ð¹ ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð¿Ð»ÐµÐ½Ð¾Ðº, ÐºÐ¾ÑÐ¾ÑÐ°Ñ ÑÐ²Ð»ÑÐµÑÑÑ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ Ð²Ð°Ð¶Ð½ÑÐ¼ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð¼ Ð´Ð»Ñ ÑÑÐ½Ð½ÐµÐ»ÑÐ½Ð¾-ÑÐ¾Ð½ÐºÐ¸Ñ ÑÐ»Ð¾ÐµÐ². Ð¢Ð¾ÐºÐ¸ ÑÑÐµÑÐºÐ¸ Ð»ÑÑÑÐ¸Ñ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² ÑÐ´Ð¾Ð²Ð»ÐµÑÐ²Ð¾ÑÑÑÑ ÑÐ¾Ð²ÑÐµÐ¼ÐµÐ½Ð½ÑÐ¼ ÑÑÐµÐ±Ð¾Ð²Ð°Ð½Ð¸ÑÐ¼ Ð´Ð»Ñ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾Ð² Ñ Ð½Ð¸Ð·ÐºÐ¸Ð¼ Ð¿Ð¾ÑÑÐµÐ±Ð»ÐµÐ½Ð¸ÐµÐ¼ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸, Ð° Ð²Ð¾Ð»ÑÑ-ÑÐ°ÑÐ°Ð´Ð½ÑÐµ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ ÑÐ¾Ð³Ð»Ð°ÑÑÑÑÑÑ Ñ Ð¾Ð¶Ð¸Ð´Ð°ÐµÐ¼ÑÐ¼Ð¸ Ð½Ð° Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÑÐ°Ð´Ð¸Ð¸ ÑÐ°Ð±Ð¾ÑÑ. ÐÐ»Ñ Ð°Ð½Ð°Ð»Ð¸Ð·Ð°, Ð¾Ð±ÑÐ°Ð±Ð¾ÑÐºÐ¸ Ð¸ Ð²Ð¸Ð·ÑÐ°Ð»Ð¸Ð·Ð°ÑÐ¸Ð¸ ÑÐ¸ÑÐ»Ð¾Ð²ÑÑ Ð´Ð°Ð½Ð½ÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð»Ð¸ÑÑ: Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½Ð¾-Ð¼Ð°ÑÐµÐ¼Ð°ÑÐ¸ÑÐµÑÐºÐ¾Ðµ Ð¾Ð±ÐµÑÐ¿ÐµÑÐµÐ½Ð¸Ðµ SciDavis Ð¸ ÑÐ¿ÐµÑÐ¸Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐµ Ð±Ð¸Ð±Ð»Ð¸Ð¾ÑÐµÐºÐ¸ (numpy, pandas, matplotlib, seaborn) Ð´Ð»Ñ ÑÐ·ÑÐºÐ° Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Python.
description: The work is devoted to the study of thin fluoride layers grown on Si(111) substrates by molecular beam epitaxy. Epitaxial fluorides is a promising material as a gate dielectric in new generation MIS-transistors, with a channel made of 2D-material. The aim of this work is to study the mechanisms of fluoride growth (CaF2, MgxCa1-xF2) on silicon (111) and to measure the electrophysical characteristics of Au/2 nm CaF2/n-Si(111) structures. The following experimental techniques were used in the work: reflection high-energy electron diffraction, atomic force microscopy, measurement of voltage-current and voltage-capacitance characteristics. It has been shown that the optimal temperature for the growth of CaF2 with the epitaxial type-A relationship is 150-300Â°C. MgF2 is a surfactant that promotes the layer-by-layer CaF2 growth, which, is expected to a decrease thickness film fluctuations, which is a particularly important parameter for tunnel-thin layers. The leakage currents of the best samples meet modern requirements for devices with low power consumption, and the voltage-capacitance characteristics are consistent with those expected at this stage of work. For the analysis, processing and visualization of numerical data, SciDAVis software and specialized libraries (numpy, pandas, matplotlib, seaborn) for the Python programming language were used.