title: Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ð¿Ð»Ð°Ð·Ð¼Ð¾Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð´Ð»Ñ ÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ð²ÐµÑÑÐ¸ÐºÐ°Ð»ÑÐ½ÑÑ ÑÑÑÑÐºÑÑÑ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Development of plasma-chemical etching technology for the formation of vertical structures
Creators: name: ÐÐ¾ÑÐ½Ð¸Ð»Ð¾Ð², Ð Ð¾Ð¼Ð°Ð½
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: ÐÐ»Ð°Ð·Ð¼Ð° (ÑÐ¸Ð·.)
Ð¢ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð²
ÐÑÐµÐ¼Ð½Ð¸Ð¹

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ Ð¾ÑÐ½Ð¾Ð²Ð½ÑÑ ÑÐ¸Ð·Ð¸ÐºÐ¾-ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¸Ñ Ð·Ð°ÐºÐ¾Ð½Ð¾Ð¼ÐµÑÐ½Ð¾ÑÑÐµÐ¹ Ð¿ÑÐ¾ÑÐµÑÑÐ° ÑÐ¼ÐµÑÐ°Ð½Ð½Ð¾Ð³Ð¾ Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð³Ð»ÑÐ±Ð¾ÐºÐ¾Ð³Ð¾ Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð½Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¼Ð¾Ð½Ð¾ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð½Ð° ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ Ñ Ð¸Ð½Ð´ÑÐºÑÐ¸Ð²Ð½Ð¾ ÑÐ²ÑÐ·Ð°Ð½Ð½Ð¾Ð¹ Ð¿Ð»Ð°Ð·Ð¼Ð¾Ð¹ (ÐÐ¡Ð) Ð¸ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐµ Ð½Ð° ÑÑÐ¾Ð¹ Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ð³Ð»ÑÐ±Ð¾ÐºÐ¾Ð³Ð¾ Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð½Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÐºÑÐµÐ¼Ð½Ð¸Ñ. Ð ÑÐ²ÑÐ·Ð¸ Ñ ÑÑÐ¸Ð¼ Ð² ÑÐ¾Ð´Ðµ Ð²ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ð¸Ñ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ñ ÑÐ°ÑÐ°ÐºÑÐµÑ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð¾ÑÐ½Ð¾Ð²Ð½ÑÑ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² (Ð¼Ð¾ÑÐ½Ð¾ÑÑÑ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ°, Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ðµ ÑÐ¼ÐµÑÐµÐ½Ð¸Ñ, Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ðµ Ð² ÑÐµÐ°ÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÐºÐ°Ð¼ÐµÑÐµ, ÑÐ°ÑÑÐ¾Ð´Ñ Ð³Ð°Ð·Ð¾Ð² SF6, C4F8, O2Â  Ð² ÑÐµÐ°ÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ¼ÐµÑÐ¸) Ð½Ð° Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ(ÑÐºÐ¾ÑÐ¾ÑÑÑ, ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ, Â«ÑÐ°ÑÑÑÐ°Ð²Â» ÑÑÑÑÐºÑÑÑÑ Ð¸ ÑÐ³Ð¾Ð» Ð½Ð°ÐºÐ»Ð¾Ð½Ð° ÑÑÐµÐ½ÐºÐ¸ Ð¿ÑÐ¾ÑÐ¸Ð»Ñ Ð¾ÐºÐ½Ð° ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ) Ð¿ÑÐ¸ ÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ð¸ Ð³Ð»ÑÐ±Ð¾ÐºÐ¸Ñ ÑÑÑÑÐºÑÑÑ Ð² ÐºÑÐµÐ¼Ð½Ð¸Ð¸. Ð Ð°Ð±Ð¾ÑÐ° Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð°ÑÑ Ð½Ð° Ð±Ð°Ð·Ðµ Ð»Ð°Ð±Ð¾ÑÐ°ÑÐ¾ÑÐ¸Ð¸ Ð¡ÐÐ±ÐÐ£ Ð¸Ð¼. Â«ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾Â», Ð³Ð´Ðµ ÑÐ¾Ð±Ð¸ÑÐ°Ð»Ð°ÑÑ Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð°Ñ ÑÐ°ÑÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð°: Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¾ÑÑ ÐÐ¥Ð¢ ÑÑÑÑÐºÑÑÑ, Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ðµ Ð¡Ð­Ð-Ð¸Ð·Ð¾Ð±ÑÐ°Ð¶ÐµÐ½Ð¸Ð¹, Ð°Ð½Ð°Ð»Ð¸Ð· Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÑÑÑÐºÑÑÑ. ÐÑÐ» Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½ ÑÐ°ÑÑÐµÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ° X, ÐºÐ¾ÑÐ¾ÑÑÐ¹ Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ¸ÑÑÐµÑ ÐºÐ°ÐºÐ¸Ð¼ Ð¾Ð±ÑÐ°Ð·Ð¾Ð¼ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸Ðµ ÑÑÐ¾ÑÐ° Ð¸ ÑÐ³Ð»ÐµÑÐ¾Ð´Ð° Ð²Ð»Ð¸ÑÐµÑ Ð½Ð° Ð¿ÑÐ¾ÑÐ¸Ð»Ñ Ð¿Ð¾Ð»ÑÑÐ°ÐµÐ¼ÑÑ ÑÑÑÑÐºÑÑÑ. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð±ÑÐ»Ð° Ð¿ÑÐ¾Ð°Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð° ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ñ Ð³Ð»ÑÐ±Ð¾ÐºÐ¾Ð³Ð¾ Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð½Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ, Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ñ ÑÐ°ÑÑÐµÑÑ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸Ð¹ ÑÑÐ¾ÑÐ° Ð¸ ÑÐ³Ð»ÐµÑÐ¾Ð´Ð°. Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ñ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ Ð²ÐµÑÑÐ¸ÐºÐ°Ð»ÑÐ½ÑÑ ÑÑÐµÐ½Ð¾Ðº Ñ Ð¿Ð¾Ð»ÑÑÐ°ÐµÐ¼ÑÑ ÑÑÑÑÐºÑÑÑ, Ð¿Ð¾ÑÑÐµÐ´ÑÑÐ²Ð¾Ð¼ in-situ ÐºÐ¾Ð½ÑÑÐ¾Ð»Ñ Ð¿Ð»Ð°Ð·Ð¼Ñ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ ÐÐ­Ð¡.
description: This work is devoted to the study of the main physicochemical regularities of the process of mixed plasma-chemical deep anisotropic etching of single-crystal silicon on an inductively coupled plasma facility and the development of a deep anisotropic silicon etching technology on this basis. In this regard, in the course of the work, the nature of the influence of the main technological parameters (source power, bias voltage, pressure in the reaction chamber, gas flow rates SF6, C4F8, O2 in the reaction mixture) on the etching parameters ( speed, selectivity of etching, âetchingâ of the structure and the angle of inclination of the wall of the etching window profile) during the formation of deep structures in silicon. The work was carried out on the basis of the laboratory of St. Petersburg Polytechnic University "Peter the Great", where a significant part of the material was collected: PCT of structures was carried out, SEM images were obtained, and the analysis of the obtained structures was carried out. The parameter X was calculated, which demonstrates how the ratio of fluorine and carbon affects the profile of the resulting structures. As a result, the technology of deep anisotropic etching was analyzed, and the ratios of fluorine and carbon were calculated. A technology has been developed for obtaining vertical walls in the resulting structures, by means of in-situ plasma control using OES.