title: Ð¦Ð¸ÑÑÐ¾Ð²Ð°Ñ Ð¼Ð¾Ð´ÐµÐ»Ñ Ð¼Ð¾Ð½Ð¾Ð»Ð¸ÑÐ½Ð¾Ð¹ Ð¸Ð½ÑÐµÐ³ÑÐ°Ð»ÑÐ½Ð¾Ð¹ ÑÑ ÐµÐ¼Ñ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾ÑÐ° Ð¡ÐÐ§, ÑÐ¿ÑÐ°Ð²Ð»ÑÐµÐ¼Ð¾Ð³Ð¾ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸ÐµÐ¼
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Digital model of a monolithic integrated circuit of a voltage-controlled microwave oscillator
Creators: name: ÐÑÐºÑÑÐ½Ð¾Ð², ÐÐ»ÐµÐºÑÐ°Ð½Ð´Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: ÑÐ°Ð·Ð¾Ð²ÑÐ¹ ÑÑÐ¼
Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾Ñ
ÑÐ¿ÑÐ°Ð²Ð»ÑÐµÐ¼ÑÐ¹ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸ÐµÐ¼
Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½ Ð¿ÐµÑÐµÑÑÑÐ¾Ð¹ÐºÐ¸ ÑÐ°ÑÑÐ¾ÑÑ
ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ½ÑÐ¹ ÐºÐ¾Ð½ÑÑÑ
Ð´Ð¾Ð±ÑÐ¾ÑÐ½Ð¾ÑÑÑ
Ð²Ð°ÑÐ°ÐºÑÐ¾Ñ
ÑÑÐ°Ð½ÑÑÐ¾ÑÐ¼Ð°ÑÐ¾Ñ
phase noise
voltage-controlled oscillator
frequency tuning range
quality factor
tank circuit
varactor
transformer

description: Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¿ÑÑÐµÐ¹ Ð¿Ð¾ÑÑÑÐ¾ÐµÐ½Ð¸Ñ Ð¸ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° Ð½Ð° Ð¸Ñ Ð¾ÑÐ½Ð¾Ð²Ðµ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾ÑÐ°, ÑÐ¿ÑÐ°Ð²Ð»ÑÐµÐ¼Ð¾Ð³Ð¾ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸ÐµÐ¼, Ð¡ÐÐ§ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð° Ñ Ð½Ð¸Ð·ÐºÐ¸Ð¼ ÑÑÐ¾Ð²Ð½ÐµÐ¼ ÑÐ°Ð·Ð¾Ð²ÑÑ ÑÑÐ¼Ð¾Ð² Ð² ÑÐ°Ð¼ÐºÐ°Ñ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ SiGe BiCMOS 130-Ð½Ð¼ ÑÐµÑÐ¿ÑÐ¾ÑÐµÑÑÐ° Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÑÐ°Ð½Ð´Ð°ÑÑÐ½ÑÑ Ð¿ÑÐ¾Ð¼ÑÑÐ»ÐµÐ½Ð½ÑÑ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½ÑÐ¾Ð² ÐºÐ¾Ð¼Ð¿Ð°Ð½Ð¸Ð¸ Nexperia. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð±ÑÐ» Ð¿ÑÐ¾Ð²ÐµÐ´ÑÐ½ Ð°Ð½Ð°Ð»Ð¸Ð· ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÑÐµÐ¼Ð¾ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐµÑÐµÐ½Ð¸Ð¹ ÐÐ£Ð, Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÐºÐ¾ÑÐ¾ÑÐ¾Ð³Ð¾ Ð±ÑÐ»Ð° Ð²ÑÐ±ÑÐ°Ð½Ð° ÑÐµÑÐµÑÐµÐ½ÑÐ½Ð°Ñ ÑÑÐµÐ¼Ð° Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾ÑÐ°, ÑÐ¿ÑÐ°Ð²Ð»ÑÑÑÐµÐ³Ð¾ÑÑ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸ÐµÐ¼. ÐÑÐ»Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð¼ÐµÑÐ¾Ð´Ñ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ¸ Ð¿Ð»Ð°Ð½Ð°ÑÐ½ÑÑ Ð¸Ð½Ð´ÑÐºÑÐ¸Ð²Ð½Ð¾ÑÑÐµÐ¹ Ð¸ ÑÑÐ°Ð½ÑÑÐ¾ÑÐ¼Ð°ÑÐ¾ÑÐ¾Ð², Ð² ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ ÑÐµÐ³Ð¾ Ð±ÑÐ»Ð¸ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ñ Ð¿Ð»Ð°Ð½Ð°ÑÐ½ÑÐµ Ð¸Ð½Ð´ÑÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑ Ð¸ ÑÑÐ°Ð½ÑÑÐ¾ÑÐ¼Ð°ÑÐ¾Ñ, Ð¾ÑÐ²ÐµÑÐ°ÑÑÐ¸Ðµ Ð·Ð°Ð´Ð°Ð½Ð½ÑÐ¼ ÑÑÐµÐ±Ð¾Ð²Ð°Ð½Ð¸ÑÐ¼. ÐÑÐ»Ð° ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° Ð¿ÑÐ¸Ð½ÑÐ¸Ð¿Ð¸Ð°Ð»ÑÐ½Ð°Ñ ÑÑÐµÐ¼Ð° Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾ÑÐ°, ÑÐ¿ÑÐ°Ð²Ð»ÑÐµÐ¼Ð¾Ð³Ð¾ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸ÐµÐ¼, Ð¿Ð¾ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ°Ð¼ Ð°Ð½Ð°Ð»Ð¸Ð·Ð° ÐºÐ¾ÑÐ¾ÑÐ¾Ð¹ Ð±ÑÐ» ÑÐ¾Ð²ÐµÑÑÑÐ½ Ð¿ÐµÑÐµÑÐ¾Ð´ Ð½Ð° ÑÐµÐ°Ð»ÑÐ½ÑÐµ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½ÑÑ. ÐÑÐ»ÐµÐ´ÑÑÐ²Ð¸Ðµ ÑÑÐ¾Ð³Ð¾, Ð±ÑÐ»Ð° ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° ÑÐ¾Ð¿Ð¾Ð»Ð¾Ð³Ð¸Ñ ÐÐ£Ð, Ð¿ÑÐ¾Ð¸Ð·Ð²ÐµÐ´ÐµÐ½Ñ ÑÑÐµÐ¼Ð¾ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¾Ðµ Ð¸ ÑÐ»ÐµÐºÑÑÐ¾Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ðµ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ, Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÑÑÐ¸Ðµ Ð¿ÑÐ¾Ð°Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°ÑÑ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¾Ñ Ð² ÑÐ°ÑÑÐ¾ÑÐ½Ð¾Ð¹ Ð¸ Ð²ÑÐµÐ¼ÐµÐ½Ð½Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÑÑ. Ð¢Ð°ÐºÐ¶Ðµ Ð²ÑÑÐ¸ÑÐ»ÐµÐ½ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½ Ð¿ÐµÑÐµÑÑÑÐ¾Ð¹ÐºÐ¸ ÑÐ°ÑÑÐ¾ÑÑ Ð¸ ÑÐ°Ð·Ð¾Ð²ÑÐ¹ ÑÑÐ¼. ÐÐ¾ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ°Ð¼ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÑÑÑÐ¾Ð¹ÑÑÐ²Ð¾ Ð¾Ð±Ð»Ð°Ð´Ð°ÐµÑ ÑÐ»ÐµÐ´ÑÑÑÐ¸Ð¼Ð¸ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ°Ð¼Ð¸: Ð½Ð° ÑÐµÐ½ÑÑÐ°Ð»ÑÐ½Ð¾Ð¹ ÑÐ°ÑÑÐ¾ÑÐµ 15 ÐÐÑ Ð¼Ð¸Ð½Ð¸Ð¼Ð°Ð»ÑÐ½ÑÐ¹ ÑÐ°Ð·Ð¾Ð²ÑÐ¹ ÑÑÐ¼ ÑÐ¾ÑÑÐ°Ð²Ð¸Ð» -107.8 Ð´ÐÐ½/ÐÑ Ð¿ÑÐ¸ Ð¾ÑÑÑÑÐ¾Ð¹ÐºÐµ 1 ÐÐÑ Ð¸ â 128.4 Ð´ÐÐ½/ÐÑ Ð¿ÑÐ¸ Ð¾ÑÑÑÑÐ¾Ð¹ÐºÐµ Ð² 10 ÐÐÑ. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐ¹ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½ Ð¿ÐµÑÐµÑÑÑÐ¾Ð¹ÐºÐ¸ ÑÐ°ÑÑÐ¾ÑÑ ÑÐ°Ð²ÐµÐ½ 1,5 ÐÐÑ, ÑÑÐ¾ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÐµÑ 10% Ð¾ÑÐ½Ð¾ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ Ð½ÐµÑÑÑÐµÐ¹ ÑÐµÐ½ÑÑÐ°Ð»ÑÐ½Ð¾Ð¹ ÑÐ°ÑÑÐ¾ÑÑ.
description: The aim is to investigate ways to build and develop on their basis a voltagecontrolled microwave generator with a low level of phase noise within the framework of the SiGe BiCMOS 130 nm process technology based on standard industrial components from Nexperia. As a result of the study, a schematic diagram of a voltage-controlled oscillator was developed, according to the results of the analysis of which the transition to real components was made. In consequence, the VCO topology was developed, circuit engineering and electromagnetic modeling were performed, allowing the generator to be analyzed in the frequency and time domains. The frequency tuning range and phase noise were also calculated. The oscillator features a phase noise of â107.8 dBc/Hz at 1MHz offset from the carrier, a wide 10% tuning range. In conclusion, the results indicate the potential of this design and its feasibility for implementation in highly integrated transceiver devices.