cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Stochastic modeling of cell growth with symmetric or asymmetric division
Creators: name: Marantan, Andrew
name: Amir, Ariel
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantitative Methods (q-bio.QM)
subject: FOS: Biological sciences

description: We consider a class of biologically-motivated stochastic processes in which a unicellular organism divides its resources (volume or damaged proteins, in particular) symmetrically or asymmetrically between its progeny. Assuming the final amount of the resource is controlled by a growth policy and subject to additive and multiplicative noise, we derive the "master equation" describing how the resource distribution evolves over subsequent generations and use it to study the properties of stable resource distributions. We find conditions under which a unique stable resource distribution exists and calculate its moments for the class of affine linear growth policies. Moreover, we apply an asymptotic analysis to elucidate the conditions under which the stable distribution (when it exists) has a power-law tail. Finally, we use the results of this asymptotic analysis along with the moment equations to draw a stability phase diagram for the system that reveals the counterintuitive result that asymmetry serves to increase stability while at the same time widening the stable distribution. We also briefly discuss how cells can divide damaged proteins asymmetrically between their progeny as a form of damage control. In the appendix, motivated by the asymmetric division of cell volume in Saccharomyces cerevisiae, we extend our results to the case wherein mother and daughter cells follow different growth policies.
description: 22 pages, 11 figures
Short Kloosterman sums to powerful modulus
Creators: name: Korolev, Maxim A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Number Theory (math.NT)
subject: FOS: Mathematics
subject: 11L05, 11N37

description: We obtain the estimate of incomplete Kloosterman sum to powerful modulus $q$. The length $N$ of the sum lies in the interval $e^{c(\log{q})^{2/3}}\le N\le \sqrt{q}$.
description: 7 pages
Progress in Optical Characterization of Amorphous Silicon Tandem Cells
Creators: name: Trigo, J.F.
name: Herrero, J.
name: Izard, J.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2544-2548
description: We have characterized the performance of amorphous silicon tandem cells and commercial mini
modules manufactured by SOLIKER. The mini modules consisting on four tandem cells with an aperture of 42 cm2
exceeded 9% efficiency with a Voc=7.12V. Those cells and modules have been also spectrally characterized and the
measurements of IQE have been related to the optical properties of each layer and the whole multilayer.
A combination of experimental measurements and computer simulation lead us to the fitting of the reflectance spectra
and the optical model and parameters extracted were used for a calculation of the absorbed light resolved in depth and
wavelength.
This work presents comprehensive optical characterization of a stable technology of tandem cells made of a-Si. We
have modeled the optical behavior of the device and connected it to the performance measurements of the cells. The
results correspond to a competitive thin film technology and only very detailed analysis and in-situ process controls
will lead to further improvements.
Damping of the Higgs and Nambu-Goldstone modes of superfluid Bose gases at finite temperatures
Creators: name: Nagao, Kazuma
name: Danshita, Ippei
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Gases (cond-mat.quant-gas)
subject: FOS: Physical sciences

description: We study collective modes of superfluid Bose gases in optical lattices at commensurate fillings. We focus on the vicinity of the quantum phase transition to the Mott insulator, where there exists the Higgs amplitude mode in addition to the Nambu-Goldstone phase mode associated with the spontaneous U(1) symmetry breaking. We analyze finite-temperature effects on the damping of the collective modes by using an effective spin-1 model and the field theoretical methods based on the finite-temperature Green's function. We calculate the damping rates up to 1-loop order and evaluate them analytically and numerically. We show that the damping rate of the Higgs mode increases with increasing the temperature but it remains underdamped up to a typical temperature achieved in experiments. Moreover, we find that the Nambu-Goldstone mode attenuates via a Landau damping process resulting from interactions with the Higgs mode and it can be overdamped at the typical temperature in a certain parameter region.
description: 17 pages, 7 figures
Optical Property Measurements of High Haze TCO Coatings
Creators: name: Farmer, J.
name: Nichol, G.
name: Seto, Y.
name: McSporran, N.
name: Deslandes, L.-M.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2549-2553
description: High haze transparent conductive oxide (TCO) coatings are required to achieve good light trapping
within thin film silicon solar cells. It is important to be able to measure and control the optical properties of these
films. High haze samples present particular challenges for light transmittance measurements and it is a complex
problem to correlate differences in transmittance values for a TCO coated glass to the actual performance in a module
where a silicon thin film is present at the TCO interface. This paper reviews the common techniques for
characterizing high haze samples such as the use of integrating spheres and haze compensated measurements and
compares the measurements on a number of high haze samples using a variety of instruments and techniques. Further
measurements of TCOs using wavelength and angle resolved scattering analysis (WARS) reveals significant
differences in their light scattering performance. The paper discusses how these techniques can be used to assist the
development of the next generation of high performance TCOs.
n-Doped Mixed Phase Silicon Oxide for Improved Micromorph Solar Cells
Creators: name: Mercaldo, L.V.
name: Delli Veneri, P.
name: Usatii, I.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2507-2510
description: The use of mixed-phase phosphorous doped silicon oxide as improved n-layer in both the component
cells of micromorph devices is proposed. The structure of the films with appropriate electrical and optical
characteristics has been investigated, revealing phase separation at nanometer scale. The layers have been inserted in
the top and bottom junctions of micromorph solar cells. Higher currents have been achieved for both the component
cells with respect to the values obtained using standard microcrystalline Si n-layer, with no influence on fill factor
and open circuit voltage. The current increase is particularly evident for the bottom cell, as revealed by the strong
enhancement of the spectral response in the red/infrared spectral region. The feasibility of high current values, as an
effect of a better light management, in a simplified cell structure with a simple Ag back contact and without any
intermediate reflector between the two cells is then demonstrated.
Angular dependent micro-ESR characterization of a locally doped Gd3+:Al2O3 system
Creators: name: Wisby, I. S.
name: de Graaf, S. E.
name: Gwilliam, R.
name: Adamyan, A.
name: Kubatkin, S. E.
name: Meeson, P. J.
name: Tzalenchuk, A. Ya.
name: Lindström, T.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Quantum Physics (quant-ph)
subject: Materials Science (cond-mat.mtrl-sci)
subject: Superconductivity (cond-mat.supr-con)
subject: FOS: Physical sciences

description: Interfacing rare-earth doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd$^{3+}$ in Al$_2$O$_3$ spin system coupled to a superconducting micro-resonator. We investigate the properties of the implanted spin system through angular dependent micro-resonator electron spin resonance (micro-ESR) spectroscopy. We find, despite the high energy near-surface implantation, the resulting micro-ESR spectra to be in excellent agreement with the modelled Hamiltonian, supporting the integration of dopant ions into their relevant lattice sites whilst maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our micro-resonator, emphasising the need for controllable local implantation.
description: 6 pages, 3 figures
Time Resolved Process Monitoring During the Deposition of Amorphous and Microcrystalline Silicon
Creators: name: Gabriel, O.
name: Tomassone, G.-M.
name: Rohde, M.
name: Zelt, M.
name: Stannowski, B.
name: Schlatmann, R.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2511-2514
description: The Competence Centre Thin-Film- and Nanotechnology for Photovoltaics Berlin (PVcomB) has been
established within the Helmholtz-Zentrum Berlin (HZB) in cooperation with TU Berlin. Two R&D lines for thin-film
Si and CIGS based PV Modules on 30×30 cm² are currently built up. The goal is to facilitate technology transfer
from R&D to industrial production. In this paper we report on the status of our thin film silicon baseline with the
focus on in situ process monitoring by means of optical emission spectroscopy. The purpose is in-line monitoring of
relevant process and plasma parameters during production and, finally, a better understanding of the plasma
chemistry and thin film growth processes.
Classical noise and the structure of minimal uncertainty states
Creators: name: Korzekwa, Kamil
name: Lostaglio, Matteo
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: Which quantum states minimise the unavoidable uncertainty arising from the non-commutativity of two observables? The immediate answer to such a question is: it depends. Due to the plethora of uncertainty measures there are many answers. Here, instead of restricting our study to a particular measure, we present plausible axioms for the set $\mathcal{F}$ of bona-fide information-theoretic uncertainty functions. Then, we discuss the existence of states minimising uncertainty with respect to all members of $\mathcal{F}$, i.e., universal minimum uncertainty states (MUS). We prove that such states do not exist within the full state space and study the effect of classical noise on the structure of minimum uncertainty states. We present an explicit example of a qubit universal MUS that arises when purity is constrained by introducing a threshold amount of noise. For higher dimensional systems we derive several no-go results limiting the existence of noisy universal MUS. However, we conjecture that universality may emerge in an approximate sense. We conclude by discussing connections with thermodynamics, and highlight the privileged role that non-equilibrium free energy $F_2$ plays close to equilibrium.
description: 16 pages, 3 figures, comments welcome
Enhancement of Spectral Response in Amorphous Silicon-Based Thin-Film Solar Cells by Low Temperature Silicon Nitride Index Matching Layer
Creators: name: Hsu, C.H.
name: Lin, Y.P.
name: Tsai, C.C.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2528-2530
description: In this work, we employed hydrogenated amorphous silicon nitride (a-SiNx:H) layer as indexmatching
layer in the hydrogenated amorphous silicon thin-film solar cell. The a-SiNx:H layer between the glass
substrate and the transparent conducting oxide (TCO) reduced the optical reflection between these two different
refractive index layers. The refractive index of a-SiNx:H deposited by plasma enhanced chemical vapor deposition
(PECVD) was lowered as 1.78. An optimized thickness of 80nm was obtained for the a-SiNx:H to improve the cell
efficiency by increasing the short-circuit current. The optical reflection and quantum efficiency measurement also
confirmed the enhancement.
Titratable Macroions in Multivalent Electrolyte Solutions: Strong Coupling Dressed Ion Approach
Creators: name: Adzic, Natasa
name: Podgornik, Rudolf
Publisher: name: arXiv
Year: 2016
Subjects: subject: Biological Physics (physics.bio-ph)
subject: Soft Condensed Matter (cond-mat.soft)
subject: Chemical Physics (physics.chem-ph)
subject: FOS: Physical sciences

description: We present a theoretical description of the effect of polyvalent ions on the interaction between titratable macro-ions. The model system consists of two point-like macro-ions with dissociable sites, immersed in an asymmetric ionic mixture of monovalent and polyvalent salts. We formulate a {\em dressed ion strong coupling theory}, based on the decomposition of the asymmetric ionic mixture into a weakly electrostatically coupled monovalent salt, and into polyvalent ions that are strongly electrostatically coupled to the titratable macro-ions. The charge of the macroions is not considered as fixed, but is allowed to respond to local bathing solution parameters (electrostatic potential, $pH$ of the solution, salt concentration) through a simple {\em charge regulation} model. The approach presented, yielding an effective polyvalent-ion mediated interaction between charge-regulated macro-ions at various solution conditions, describes the strong coupling equivalent of the Kirkwood-Schumaker interaction.
description: 13 pages, 7 figures, submitted to J. Chem. Phys
Large Area Multilayer TCO for High Efficiency Thin Film Modules
Creators: name: Losio, P.A.
name: Caglar, O.
name: Carroy, P.
name: Kluth, O.
name: Nicolay, S.
name: Ding, L.
name: Benkhaira, M.
name: Ballif, C.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2537-2539
description: High efficiency large area thin film silicon solar modules require highly optimized front contacts based
on transparent conductive oxides (TCO). In single layer TCO it is usually not possible to optimize independently the
key parameters haze, total transmission and resistivity. In this work, we present results of scaling a multilayer TCO
process from laboratory scale to large area (1.4 m2) industrial production equipment from Oerlikon Solar. Combining
two TCO sublayers with different dopant concentrations allows optimizing haze and resistivity independently.
Valence fluctuations in Sn(Pb)$_2$P$_2$S$_6$ ferroelectrics
Creators: name: Yevych, R.
name: Haborets, V.
name: Medulych, M.
name: Molnar, A.
name: Kohutych, A.
name: Dziaugys, A.
name: Banys, Ju.
name: Vysochanskii, Yu.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: The valence fluctuations which are related to the charge disproportionation of phosphorous ions $P^{4+} + P^{4+}\rightarrow P^{3+} + P^{5+}$ are the origin of ferroelectric and quantum paraelectric states in Sn(Pb)$_2$P$_2$S$_6$ semiconductors. They involve recharging of SnPS$_3$ or PbPS$_3$ structural groups which could be represented as half-filled sites in the crystal lattice. Temperature-pressure phase diagram for Sn$_2$P$_2$S$_6$ compound and temperature-composition phase diagram for (Pb$_y$Sn$_{1-y}$)$_2$P$_2$S$_6$ mixed crystals, which include tricritical points and where a temperature of phase transitions decrease to 0 K, together with the data about some softening of low energy optic phonons and rise of dielectric susceptibility at cooling in quantum paraelectric state of Pb$_2$P$_2$S$_6$, are analyzed by GGA electron and phonon calculations and compared with electronic correlations models. The anharmonic quantum oscillators model is developed for description of phase diagrams and temperature dependence of dielectric susceptibility.
Effect of Bandgap Grading On Spectral Response Of a-Si1-xGex:H Single-Junction Thin-Film Solar Cells by Bandgap Grading Techniques
Creators: name: Hsu, H.J.
name: Hsu, C.H.
name: Wang, C.M.
name: Tsai, C.C.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2525-2527
description: In this work, the effect of bandgap grading width near the p/i and the i/n interfaces on the spectral
response in a-Si1-xGex:H absorber was studied. The spectral response was improved by employing both p/i and i/n
grading. By shrinking the i/n grading width to 45 nm, the cell had a higher spectral response and FF, since an
improper thickness of i/n grading might decrease the absorption of low-energy photons. On the other hand, a thin p/i
grading as low as 20 nm would have a higher spectral response in the entire spectrum and an improved FF. In
conjunction with the optimization of doped layers and grading structure, the cell efficiency of 8.59% has been achieved.
The K2-ESPRINT Project II: Spectroscopic follow-up of three exoplanet systems from Campaign 1 of K2
Creators: name: Van Eylen, Vincent
name: Nowak, Grzegorz
name: Albrecht, Simon
name: Palle, Enric
name: Ribas, Ignasi
name: Bruntt, Hans
name: Perger, Manuel
name: Gandolfi, Davide
name: Hirano, Teriyuki
name: Sanchis-Ojeda, Roberto
name: Kiilerich, Amanda
name: Arranz, Jorge P.
name: Badenas, Mariona
name: Dai, Fei
name: Deeg, Hans J.
name: Guenther, Eike W.
name: Montanes-Rodriguez, Pilar
name: Narita, Norio
name: Rogers, Leslie A.
name: Bejar, Victor J. S.
name: Shrotriya, Tushar S.
name: Winn, Joshua N.
name: Sebastian, Daniel
Publisher: name: arXiv
Year: 2016
Subjects: subject: Earth and Planetary Astrophysics (astro-ph.EP)
subject: Solar and Stellar Astrophysics (astro-ph.SR)
subject: FOS: Physical sciences

description: We report on Doppler observations of three transiting planet candidates that were detected during Campaign 1 of the K2 mission. The Doppler observations were conducted with FIES, HARPS-N and HARPS. We measure the mass of K2-27b (EPIC 201546283b), and provide constraints and upper limits for EPIC 201295312b and EPIC 201577035b. K2-27b is a warm Neptune orbiting its host star in 6.77 days and has a radius of $4.45^{+0.33}_{-0.33}~\mathrm{R_\oplus}$ and a mass of $29.1^{+7.5}_{-7.4}~\mathrm{M_\oplus}$, which leads to a mean density of $1.80^{+0.70}_{-0.55}~\mathrm{g~cm^{-3}}$. EPIC 201295312b is smaller than Neptune with an orbital period of 5.66 days, radius $2.75^{+0.24}_{-0.22}~\mathrm{R_\oplus}$ and we constrain the mass to be below $12~\mathrm{M_\oplus}$ at 95% confidence. We also find a long-term trend indicative of another body in the system. EPIC 201577035b, previously confirmed as the planet K2-10b, is smaller than Neptune orbiting its host star in 19.3 days, with radius $3.84^{+0.35}_{-0.34}~\mathrm{R_\oplus}$. We determine its mass to be $27^{+17}_{-16}~\mathrm{M_\oplus}$, with a 95% confidence uppler limit at $57~\mathrm{M_\oplus}$, and mean density $2.6^{+2.1}_{-1.6}~{\rm g~cm}^{-3}$. These measurements join the relatively small collection of planets smaller than Neptune with measurements or constraints of the mean density. Our code for performing K2 photometry and detecting planetary transits is now publicly available.
description: Accepted for publication in ApJ
A dynamical quasiparticle approach for the Quark-Gluon-Plasma bulk and transport properties
Creators: name: Berrehrah, Hamza
name: Bratkovskaya, Elena
name: Steinert, Thorsten
name: Cassing, Wolfgang
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: Nuclear Theory (nucl-th)
subject: FOS: Physical sciences

description: The properties of quantum-chromo dynamics (QCD) nowadays are accessable by lattice QCD calculations at vanishing quark chemical potential $μ_q$=0 but often lack a transparent physical interpretation. In this review we report about results from an extended dynamical quasiparticle model (DQPM$^*$) in which the effective parton propagators have a complex selfenergy that depends on the temperature $T$ of the medium as well as on the chemical potential $μ_q$ and the parton three-momentum ${\boldsymbol p}$ with respect to the medium at rest. It is demonstrated that this approach allows for a good description of QCD thermodynamics with respect to the entropy density, pressure etc. above the critical temperature $T_c \approx$ 158 MeV. Furthermore, the quark susceptibility $χ_q$ and the quark number density $n_q$ are found to be reproduced simultaneously at zero and finite quark chemical potential. The shear and bulk viscosities $η, ζ$, and the electric conductivity $σ_e$ from the DQPM$^*$ also turn out in close agreement with lattice results for $μ_q$ =0. The DQPM$^*$, furthermore, allows to evaluate the momentum $p$, $T$ and $μ_q$ dependencies of the partonic degrees of freedom also for larger $μ_q$ which are mandatory for transport studies of heavy-ion collisions in the regime 5 GeV $< \sqrt{s_{NN}}
description: 30 pages, 24 figures. arXiv admin note: substantial text overlap with arXiv:1512.06909
Nonlinear Gravitational Lagrangians revisited
Creators: name: Magnano, Guido
Publisher: name: arXiv
Year: 2016
Subjects: subject: General Relativity and Quantum Cosmology (gr-qc)
subject: FOS: Physical sciences
subject: 83D05

description: The Legendre transformation method, applied in 1987 to deal with purely metric gravitational Lagrangians with nonlinear dependence on the Ricci tensor, is extended to metric-affine models and is shown to provide a concise and insightful comparison of the dynamical content of the two variational frameworks.
description: Variational principles and conservation laws in General Relativity - Workshop in memory of Prof. Mauro Francaviglia - Torino, June 25th-26th, 2015
Novel Metallization Approaches with Very Low Specific Contact Resistance for Crystalline Silicon Solar Cells
Creators: name: Xu, B.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Silicon Solar Cell Improvements

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1216-1219
description: In this paper some new approaches for the front side metallization of crystalline silicon solar cells are
presented, targeting on dramatically reducing the specific contact resistance between the metal gridline and the n+
emitter layer. One of them is to use a blanket sputtered nickel film as the contact layer and screen printed silver lines
as an etch mask to pattern the underlying nickel film. This approach ensures the use of high quality nickel film as a
contact layer to reduce the specific contact resistance, and also avoids the use of standard photolithographic process
to reduce the cost. In addition, it makes the nickel contact layer self-aligned with the silver gridline and permits
immediate cell testing after firing. The experimental result shows that the specific contact resistance with this
approach can be reduced by almost two orders of magnitude compared to only using screen printed silver gridlines.
This may increase the absolute cell efficiency by up to 0.9%, as given by the PC1D modeling. In order to further
reduce the process steps and the cost for introducing the nickel film contact layer, electroless plating and inkjet
printing nickel nanoparticle inks to form the contact layer are also being developed.
Precision X-ray spectroscopy of kaonic atoms as a probe of low-energy kaon-nucleus interaction
Creators: name: Shi, H.
name: Bazzi, M.
name: Beer, G.
name: Bellotti, G.
name: Berucci, C.
name: Bragadireanu, A. M.
name: Bosnar, D.
name: Cargnelli, M.
name: Curceanu, C.
name: Butt, A. D.
name: d'Uffizi, A.
name: Fiorini, C.
name: Ghio, F.
name: Guaraldo, C.
name: Hayano, R. S.
name: Iliescu, M.
name: Ishiwatari, T.
name: Iwasaki, M.
name: Sandri, P. Levi
name: Marton, J.
name: Okada, S.
name: Pietreanu, D.
name: Piscicchia, K.
name: Vidal, A. Romero
name: Sbardella, E.
name: Scordo, A.
name: Sirghi, D. L.
name: Sirghi, F.
name: Tatsuno, H.
name: Doce, O. Vazquez
name: Widmann, E.
name: Zmeskal, J.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Nuclear Experiment (nucl-ex)
subject: FOS: Physical sciences

description: In the exotic atoms where one atomic $1s$ electron is replaced by a $K^{-}$, the strong interaction between the $K^{-}$ and the nucleus introduces an energy shift and broadening of the low-lying kaonic atomic levels which are determined by only the electromagnetic interaction. By performing X-ray spectroscopy for Z=1,2 kaonic atoms, the SIDDHARTA experiment determined with high precision the shift and width for the $1s$ state of $K^{-}p$ and the $2p$ state of kaonic helium-3 and kaonic helium-4. These results provided unique information of the kaon-nucleus interaction in the low energy limit.
description: 4 pages, 1 figure, proceedings for oral presentation at the ICNFP2015 conference, Kolymbari, Crete
title: Reflektionen des beschädigten Familienlebens
Creators: name: Mallée, Kerim
Year: 2022

description: Intergenerationale Kommunikation ist in Japan ein wichtiges Thema. In Folge des demografischen Wandels ist in kaum einem Lande das Durchschnittsalter so hoch. Gleichzeitig ist die Jugend regelmäßig im Focus von Debatten und Diskursen, in denen eine Vielzahl scheinbaren Problemfeldern benannt wird. Meistens werden jedoch Jugendliche und Erwachsene getrennt voneinander betrachtet. Deswegen soll der Umgang unterschiedlicher Generationen miteinander in den Fokus genommen werden und die Darstellung der intergenerationalen Kommunikation im japanischen Film betrachtet werden. Exemplarisch dafür werden die Figuren in Sono Shions Ai no mukidashi („Love Exposure“, 2009) und ihre Beziehungen, einer genaueren Analyse unterzogen und in einem gesellschaftlichen Kontext interpretiert werden.
A New Integrated Structuring Technology for Thinfilm Photovoltaics
Creators: name: Stein, W.
name: Kleuren, H.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2531-2533
description: A new integrated structuring technology for series interconnection of CdTe, CIS and Thinfilm-Si modules
is presented in this arcticle. This new “One-stop-Patterning” method circumvents the drawbacks of classical thinfilm
module structuring and facilitates the deposition of all three functional thinfilm layers subsequently followed by a
singular processing step. This is achieved by first depositing all three functional layers in series leading to a fully
functional cell stack. This complete stack is then segmented in a singular processing step consisting first of a classical
Pattern 3 scribing step, which intersects the back contact (in superstrate configuration) or the front contact (in substrate
configuration). After this a Laser assisted Pattern 2 scribing process is conducted, which remelts the active layers of the
cell stack under formation of a conductive area. This remelted conductive region is supposed to demonstrate good ohmic
contact properties between front and back contact, and thereby facilitates low-ohmic connection of front and back
contact, which is needed for the integrated series-connection of thin film modules. Pattern 1 scribing in this new
structuring method is finally done by specific Laser irradiation of the front/ back contact evtentually assisted by the
application of ink-jet technology. All three structuring steps can be conducted on one single processing platform with
different process heads, facilitating in principal very small dead zone areas of <150 μm, which leads to enhanced
efficiencies of the final modules.
Results shown in this paper demonstrate the feasibility of this new integrated structuring concept. The selective, welldefined
irradiation of the thinfilm layer stack leads to highly conductive ohmic contacts and Pattern 2 areas, as requested
for series-interconnection in thinfilm photovoltaics. It is shown that even with an only 20 μm wide Pattern 2 scribe line a
complete ohmic characteristic of the junction could be achieved. Also accompanied by the modification in electrical
characteristics, there is a clear optical change of the complete layer stack, which signifies that distinct material
modifications have taken place under laser beam irradiation.
Investigation of Local Light Scattering Properties of SnO2 Substrates in Amorphous Silicon Solar Cells
Creators: name: Bittkau, K.
name: Beckers, T.
name: Carius, R.
name: Agustsson, O.
name: Schotsaert, J.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2495-2498
description: Local light scattering properties of the industrial transparent conductive oxide (TCO) AN10 is
investigated with near-field scanning optical microscopy. Two different situations are compared. First, the
TCO/air interface before the deposition of silicon and, second, the surface of a p-i-n layer stack of amorphous
silicon on top of the TCO. The impact of the high refractive layer stack on the local light scattering is studied.
Additionally, the light scattering is modeled taking into account the surface topography of the TCO. From this
simulation, the angular distribution inside the silicon is analyzed.
Dynamic High Rate Deposition of Microcrystalline Silicon with Very High Excitation Frequencies (80-150MHz) Using Linear Plasma Sources
Creators: name: Strobel, C.
name: Leszczynska, B.
name: Albert, M.
name: Bartha, J.W.
name: Zimmermann, T.
name: Kuske, J.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2499-2501
description: Intrinsic microcrystalline silicon single layers and μc-Si:H solar cells were deposited in a frequency
range of 80-150 MHz with linear plasma sources. At an excitation frequency of 120 MHz the best μc-Si:H solar cells
showed initial efficiencies of 7.5 % at a deposition rate of 40 nm/min. At higher deposition rates of about 85 nm/min
the efficiency drops to 4.5 %. Further optimizations are required in this plasma regime (e.g. use of higher process
pressure). In the next step the use of even higher frequencies (150 MHz) is planned and a comprehensive study of
frequency effects in the range of 80-150 MHz will be carried out.
Minimizing Junction Damage Associated with Nickel Silicide Formation for the Front Side Metalization of Silicon Solar Cells
Creators: name: Tous, L.
name: Van Dorp, D.H.
name: Hernández, J.L.
name: Allebé, C.
name: Ngamo, M.
name: Bender, H.
name: Meersschaut, J.
name: Russell, R.
name: Poortmans, J.
name: Mertens, R.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Silicon Solar Cell Improvements

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1210-1215
description: The low temperature kinetics of the nickel silicide formation on textured surfaces is studied by using
Physical Vapor Deposition (PVD) of nickel on silicon. These results are correlated to the junction leakage on silicon solar
cells, measured by Suns-Voc and Dark-IV. Transmission Electron Microscope (TEM) analysis of nickel silicide layers
formed on pyramid textured CZ-Si for both laser ablated ARC and wet-etched ARC is presented. It is demonstrated that
junction leakage can effectively be reduced by lowering the sintering temperature and using a deeper junction. With the
optimization of the silicidation process, local Al-BSF solar cells are fabricated on large area CZ-Si using laser ablation +
nickel silicide and Cu plated contacts. Excellent results have been achieved with Voc~650 mV, Jsc~38 mA/cm2, and
FF~79 %, resulting in energy conversion efficiencies up to 19.4 %. This is equivalent to the results achieved with
sputtered Ti/Cu contacts formed by photolithography.
MOCVD ZnO/ Sputtered Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Applications
Creators: name: Limmanee, A.
name: Krudtad, P.
name: Piromjit, C.
name: Sritharathikhun, J.
name: Sriprapha, K.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2485-2488
description: We have developed flexible amorphous silicon solar cells by using MOCVD ZnO/sputtered Ag double
layer as a back reflector. SEM results show that MOCVD ZnO/sputtered Ag films deposited on polyimide substrates
have naturally grown textured morphology, while typical sputtered ZnO/sputtered Ag films show relatively smooth
surface. Single junction n-i-p amorphous silicon solar cells are fabricated in order to estimate the effects of the
MOCVD ZnO/sputtered Ag back reflector. The thickness of MOCVD ZnO layer is varied from 1200 to 2400 nm.
Experimental results indicate that the MOCVD ZnO/sputtered Ag back reflector is effective in improving solar cell
performance, mainly owing to an increase in Jsc. The highest cell efficiency is achieved at the ZnO thickness of about
2000 nm but FF of this cell is still as low as 0.51. By inserting a thin sputtered ZnO layer at the interface between the
sputtered Ag and MOCVD ZnO layer, the FF improves to 0.56 while the Jsc slightly drops. The n-i-p flexible
amorphous silicon solar cell using MOCVD ZnO/sputtered ZnO/sputtered Ag as a back reflector shows an initial
efficiency of 5.5%.
Active Learning for Community Detection in Stochastic Block Models
Creators: name: Gadde, Akshay
name: Gad, Eyal En
name: Avestimehr, Salman
name: Ortega, Antonio
Publisher: name: arXiv
Year: 2016
Subjects: subject: Machine Learning (cs.LG)
subject: Social and Information Networks (cs.SI)
subject: Probability (math.PR)
subject: FOS: Computer and information sciences
subject: FOS: Mathematics

description: The stochastic block model (SBM) is an important generative model for random graphs in network science and machine learning, useful for benchmarking community detection (or clustering) algorithms. The symmetric SBM generates a graph with $2n$ nodes which cluster into two equally sized communities. Nodes connect with probability $p$ within a community and $q$ across different communities. We consider the case of $p=a\ln (n)/n$ and $q=b\ln (n)/n$. In this case, it was recently shown that recovering the community membership (or label) of every node with high probability (w.h.p.) using only the graph is possible if and only if the Chernoff-Hellinger (CH) divergence $D(a,b)=(\sqrt{a}-\sqrt{b})^2 \geq 1$. In this work, we study if, and by how much, community detection below the clustering threshold (i.e. $D(a,b)<1$) is possible by querying the labels of a limited number of chosen nodes (i.e., active learning). Our main result is to show that, under certain conditions, sampling the labels of a vanishingly small fraction of nodes (a number sub-linear in $n$) is sufficient for exact community detection even when $D(a,b)<1$. Furthermore, we provide an efficient learning algorithm which recovers the community memberships of all nodes w.h.p. as long as the number of sampled points meets the sufficient condition. We also show that recovery is not possible if the number of observed labels is less than $n^{1-D(a,b)}$. The validity of our results is demonstrated through numerical experiments.
description: 5 pages, 3 figures, To appear in IEEE International Symposium on Information Theory 2016
Solar Spectrum Changes and Their Effect on Performance of Single and Multi-Junction a-Si Solar Cells
Creators: name: Kurnik, J.
name: Brecl, K.
name: Jankovec, M.
name: Topic, M.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2467-2470
description: Among the most important influence parameters affecting the solar cell (PV module) performance are the plane-ofarray
solar irradiance and solar cell temperature, but regarding the irradiance the performance is also affected by the
solar irradiance spectrum. In the paper a comparison between the standard AM1.5 spectrum and measured AM1.5
spectra is presented. The comparison showed that the spectra measured in Ljubljana differs from the standard AM1.5
spectrum. Comparing the measured spectra to the standard spectrum, there is slightly more short-wave light (below
0.6 μm) and slightly less long-wave light (above 0.6 μm) in the measured spectrum. We also conduct a comparative
analysis of measured spectra of solar irradiance in clear sunny and cloudy weather conditions and at different values
of air-mass factor (AM). The impact of the measured differences in the solar spectra on the performance of singleand
triple-junction a-Si solar cells is finally analyzed. In case of the single-junction a-Si solar cell the changes in the
irradiance spectrum slightly affect the performance of the cells, but in case of the triple-junction a-Si solar cell the
affect is more significant (especially on the individual sub-cells within the triple-junction solar cell).
High-Mobility Transparent Conducting W-doped In2O3 (IWO) Thin Films with Gradual Growth Rates Fabricated by Reactive Electron Beam Vapor Deposition
Creators: name: Chen, X.-L.
name: Ren, S.-R.
name: Zhang, D.-K.
name: Wei, C.-C.
name: Geng, X.-H.
name: Zhang, X.-D.
name: Zhao, Y.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2489-2491
description: Tungsten-doped indium oxide (IWO) thin films were deposited at 350  with varying growth rates in
the range of 0.01–0.04 nm/s by the reactive electron beam vapor technique and microstructure, optical and electrical
properties of these IWO thin films were investigated in detail. High purity In2O3:WO3 ceramic targets and oxygen
gas are used as source materials. Firstly, one 20 nm-thickness IWO buffer layer was fabricated on common glass
substrate by electron beam vapor deposition at the low growth rate of ~0.01 nm/s. Secondly, the other subsequent 60
nm-thickness IWO film was fabricated on the above buffer layer via the same deposition technique at relatively
higher growth rate of ~0.04 nm/s. Typical glass/IWO thin film performances with gradual growth rate: Resistivity,
p~5.05×10-4
Ωcm; electron concentration, n~1.84×1020
cm-3; electron mobility, μ~67.1 cm2V-1s-1; optical
transmittance in the visible and near infrared region, T~75-89%. The optical and electrical properties of IWO thin
films obtained with gradual rates deposition are superior to those thin films with normal growth process. The high
mobility IWO thin films are promising TCO materials applied in nip type μc-Si:H thin film solar cells and a-Si:H
/μc-Si:H tandem solar cells.
Influence of Excitation Frequencies (81.36 - 120 MHz) in the VHF-PECVD Technique on the Deposition Rate and Properties of Silicon Thin-Film Solar Cells
Creators: name: Leszczynska, B.
name: Strobel, C.
name: Albert, M.
name: Bartha, J.W.
name: Stephan, U.
name: Kuske, J.
Publisher: name: WIP
Year: 2011
Subjects: Thin Film Solar Cells
Amorphous and Microcrystalline Silicon Solar Cells

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 2492-2494
description: The influence of plasma excitation frequency (81.36 – 120 MHz) on hydrogenated amorphous silicon
(a-Si:H) deposition was examined and will be presented. Intrinsic amorphous silicon has been deposited by very high
frequency plasma enhanced chemical vapour deposition technique at the substrate temperature of 160°C. First, the
study of plasma homogeneity was performed. The excitation frequency was varied between 81.36 and 120 MHz.
Then, the changes in the material properties of intrinsic a-Si:H related to variation of deposition parameters at
120 MHz have been analyzed. Special emphasis was given to the effect of working pressure and silane concentration
on layer properties and deposition rate. Finally, the p-i-n solar cell structures with implemented intrinsic a-Si:H
absorber layers prepared at 120 MHz excitation frequency at different deposition parameters were fabricated. As a
result, single-junction p-i-n solar cell with efficiency of 8.7% was deposited at 0.9 nm/s deposition rate.
Monte-Carlo radiative transfer simulation of the circumstellar disk of the Herbig Ae star HD 144432
Creators: name: Chen, L.
name: Kreplin, A.
name: Weigelt, G.
name: Hofmann, K. -H.
name: Schertl, D.
name: Malbet, F.
name: Massi, F.
name: Petrov, R.
name: Stee, Ph.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Solar and Stellar Astrophysics (astro-ph.SR)
subject: FOS: Physical sciences

description: Studies of pre-transitional disks, with a gap region between the inner infrared-emitting region and the outer disk, are important to improving our understanding of disk evolution and planet formation. Previous infrared interferometric observations have shown hints of a gap region in the protoplanetary disk around the Herbig Ae star HD~144432. We study the dust distribution around this star with two-dimensional radiative transfer modeling. We compare the model predictions obtained via the Monte-Carlo radiative transfer code RADMC-3D with infrared interferometric observations and the {\SED} of HD~144432. The best-fit model that we found consists of an inner optically thin component at $0.21\enDash0.32~\AU$ and an optically thick outer disk at $1.4\enDash10~\AU$. We also found an alternative model in which the inner sub-AU region consists of an optically thin and an optically thick component. Our modeling suggests an optically thin component exists in the inner sub-AU region, although an optically thick component may coexist in the same region. Our modeling also suggests a gap-like discontinuity in the disk of HD~144432.
description: 18 pages, 12 figures
Correlation of Micro-Defects and Cell Performance in Crystalline Silicon-Based Solar Cell
Creators: name: Xiong, Z.
name: Zhang, C.
name: Fu, S.
name: Huang, Z.
name: Liu, Z.
name: Huang, Q.
Publisher: name: WIP
Year: 2011
Subjects: Wafer-based Silicon Solar Cells and Materials Technology
Silicon Solar Cell Characterisation and Modelling

description: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1191-1194
description: Crystalline silicon-based solar cell possesses the dominate market share in photovotalic industry, however, the
correlation of micro-defects and cell performance still remains ambiguous. In casting mc-Si process, the quality of
wafer is different at different position of the ingot. In this paper, we focus on a systematic research on the correlation
of micro-defects and cell performance. The microstructure of wafer and cell was investigated by photo luminescence
(PL), electro luminescence image (EL), light microscopy (LM), and transmission electron microscopy (TEM). The
minority carrier lifetime (MCL) of passivated wafer was scanned using a μPCD method. The interstitial iron (Fei)
content of passivated wafer was measured by an optical dissociation approach. The results show that micro-defects
deteriorate the cell performance to a great extent, especially for the inert micro-defects which cannot be gettered
during the cell fabrication process. Comparing two kinds of micro-defects, iron is more harmful to the MCL value of
wafer, should be controlled in production process.
Mesoscopic transport and quantum chaos
Creators: name: Jalabert, Rodolfo A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: The field of Quantum Chaos, addressing the quantum manifestations of an underlying classically chaotic dynamics, was developed in the early eighties, mainly from a theoretical perspective. Few experimental systems were initially recognized to exhibit the versatility of being sensitive, at the same time, to their classical and quantum dynamics. Rydberg atoms provided the main testing ground of Quantum Chaos concepts until the early nineties, marked by the development of microwave billiards, ultra-cold atoms in optical lattices, and low-temperature transport in mesoscopic semiconductor structures. The mesoscopic regime is attained in small condensed matter systems at sufficiently low temperatures for the electrons to propagate coherently across the sample. The quantum coherence of electrons, together with the ballistic motion characteristic of ultra-clean microstructures, motivated the proposal of mesocopic systems as a very special laboratory for performing measurements and testing the theoretical ideas of Quantum Chaos. Experimental realizations and many important developments, reviewed in this article, followed from such a connection.
description: 61 pages, 33 figures, review article
title: Zur Bedeutung des Innewerdens als Gotteserfahrung in der Existentialethik Karl Rahners
Creators: name: Ughonu, Bonaventure Ifeanyichukwu
Year: 2022

description: Wenn von Gotteserfahrung oder Mystik die Rede ist, neigen die Menschen oft dazu, sich diesem Thema zu entziehen, weil es traditionell auf ein kontemplatives Leben in einem Kloster reduziert wird. Für Karl Rahner war es jedoch ein brennendes Anliegen, dass die Menschen erfahren, dass diese unmittelbare Gotteserfahrung nicht etwas ist, das zu weit von ihnen entfernt ist, sondern ihnen sehr nahe ist. Es ist etwas, das sie in ihrem Alltag erfahren können, unabhängig von ihrem Beruf. Ihm geht es darum, dass die Menschen sich bewusst sind, dass sie diese Erfahrung brauchen und sich ihr nicht entziehen können, weil nichts sie in ihrem Leben ersetzen kann, auch wenn manche Menschen versuchen, sie durch Reichtum zu ersetzen. Neben diesem zentralen Punkt der Diplomarbeit bietet diese Arbeit einen neuen Begriff für Rahners Gotteserfahrung, der als synonym der Gotteserfahrung verwendet werden könnte, nämlich das Innewerden. Durch eine gründliche Untersuchung der Hintergründe und Kontexte, in denen Rahner den Begriff Innewerden verwendet hat, kommt die Arbeit zu dem Vorschlag, dass Innwerden als Gotteserfahrung verstanden werden kann. Ein weiterer einzigartiger Aspekt dieser Arbeit ist das Zusammentreffen von Rahners Existenzethik und Gotteserfahrung. Dies zeigt die Rolle, die der Mensch bei dieser Erfahrung spielt, abgesehen von der Tatsache, dass es sich um eine Erfahrung der Gnade handelt. Darüber hinaus bietet diese Arbeit eine detaillierte Analyse von Rahners Idee der Gotteserfahrung und gibt damit Antworten auf diese Fragen, wer sie erfahren kann, wo sie erfahren werden kann und wie sie heute erfahren werden kann. Am Ende werden einige praktische Beispiele vorgestellt, wie diese Erfahrung das Christentum sowohl in Afrika als auch in Europa verbessern kann.
On an ordering-dependent generalization of Tutte polynomial
Creators: name: Geloun, Joseph Ben
name: Caravelli, Francesco
Publisher: name: arXiv
Year: 2015
Subjects: subject: Mathematical Physics (math-ph)
subject: Statistical Mechanics (cond-mat.stat-mech)
subject: Combinatorics (math.CO)
subject: FOS: Physical sciences
subject: FOS: Mathematics

description: A generalization of Tutte polynomial involved in the evaluation of the moments of the integrated geometric Brownian in the Ito formalism is discussed. The new combinatorial invariant depends on the order in which the sequence of contraction-deletions have been performed on the graph. Thus, this work provides a motivation for studying an order-dependent Tutte polynomial in the context of stochastic differential equations. We show that in the limit of the control parameters encoding the ordering going to zero, the multivariate Tutte-Fortuin-Kasteleyn polynomial is recovered.
description: 17 pages, 2 figures