cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Rapid Assessment of As-Grown Interstitial Iron Concentration and Impact on p-Type Silicon Blocks via Spectral Photoluminescence Imaging
Creators: name: Mitchell, B.
name: Macdonald, D.
name: Schön, J.
name: Weber, J.W.
name: Trupke, T.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 560-563
description: Early stage material quality monitoring directly after crystallization is becoming increasingly
sophisticated. It is enabled by the characterization of various material parameters along the silicon ingot/brick side
faces. Photoluminescence techniques can provide quantitative measurements for example of the important
photovoltaic material parameter of bulk lifetime. It can measure this parameter with high spatial resolution within a
few seconds. Here, we demonstrate the extension of the spectral photoluminescence analysis on silicon bricks to the
extraction of the dissolved iron concentration. The analysis is based on 1) the reversible pairing that interstitial iron
undergoes with the acceptor atom at room temperature in the dark after iron boron pairs were dissociated with an
intense flashlight and 2) the respective lifetime fingerprint of these fairly well known defects. The analysis is
performed on the bare brick without any extra sample preparation other than already necessary surface polishing.
Measurements are at true low injection conditions and are able to be integrated it into a production environment. We
demonstrate the analysis on a industrial 6 inch multicrystalline silicon brick that was directionally solidified from
electronic grade feedstock. With access to both bulk lifetime and interstitial iron concentration, the relative impact of
the interstitial iron concentration can be quantified and the residual bulk lifetime, expected after complete removal of
the dissolved iron contamination can be calculated. Both of these represent interesting early and direct measures
relevant to the further understanding of the crystallization and following cell processing. Interstitial iron has been
found to contribute significantly to the overall recombination all through the as-grown ingot and is dominating the
recombination in the highly contaminated and lifetime bottom and top of the ingot.
Behavior of a test gyroscope moving towards a rotating traversable wormhole
Creators: name: Chakraborty, Chandrachur
name: Pradhan, Parthapratim
Publisher: name: arXiv
Year: 2016
Subjects: subject: General Relativity and Quantum Cosmology (gr-qc)
subject: High Energy Astrophysical Phenomena (astro-ph.HE)
subject: FOS: Physical sciences

description: The geodesic structure of the Teo wormhole is briefly discussed and some observables are derived that promise to be of use in detecting a rotating traversable wormhole indirectly, if it does exist. We also deduce the exact Lense-Thirring (LT) precession frequency of a test gyroscope moving toward a rotating traversable Teo wormhole. The precession frequency diverges on the ergoregion, a behavior intimately related to and governed by the geometry of the ergoregion, analogous to the situation in a Kerr spacetime. Interestingly, it turns out that here the LT precession is inversely proportional to the angular momentum ($a$) of the wormhole along the pole and around it in the strong gravity regime, a behavior contrasting with its direct variation with $a$ in the case of other compact objects. In fact, divergence of LT precession inside the ergoregion can also be avoided if the gyro moves with a non-zero angular velocity in a certain range. As a result, the spin precession frequency of the gyro can be made finite throughout its whole path, even very close to the throat, during its travel to the wormhole. Furthermore, it is evident from our formulation that this spin precession not only arises due to curvature or rotation of the spacetime but also due to the non-zero angular velocity of the spin when it does not move along a geodesic in the strong gravity regime. If in the future, interstellar travel indeed becomes possible through a wormhole or at least in its vicinity, our results would prove useful in determining the behavior of a test gyroscope which is known to serve as a fundamental navigation device.
description: LaTex, 18 pages including 7 figures, extensively revised version, one new section added, accepted for publication in JCAP
Dipole oscillation modes in light $α$-clustering nuclei
Creators: name: He, W. B.
name: Ma, Y. G.
name: Cao, X. G.
name: Cai, X. Z.
name: Zhang, G. Q.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Nuclear Theory (nucl-th)
subject: Nuclear Experiment (nucl-ex)
subject: FOS: Physical sciences

description: The $α$ cluster states are discussed in a model frame of extended quantum molecular dynamics. Different alpha cluster structures are studied in details, such as $^8$Be two-$α$ cluster structure, $^{12}$C triangle structure, $^{12}$C chain structure, $^{16}$O chain structure, $^{16}$O kite structure, and $^{16}$O square structure. The properties studied, include as the width of wave packets for different $α$ clusters, momentum distribution, and the binding energy among $α$ clusters. It is also discussed how the $α$ cluster degree of freedom affects nuclear collective vibrations. The cluster configurations in $^{12}$C and $^{16}$O are found to have corresponding characteristic spectra of giant dipole resonance (GDR), and the coherences of different $α$ clusters's dipole oscillation are described in details. The geometrical and dynamical symmetries of $α$-clustering configurations are responsible for the number and centroid energies of peaks of GDR spectra. Therefore, the GDR can be regarded as an effective probe to diagnose different $α$ cluster configurations in light nuclei.
description: 18 pages, 15 figures. Accepted by Physical Review C
A new algebraic structure in the standard model of particle physics
Creators: name: Boyle, Latham
name: Farnsworth, Shane
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Theory (hep-th)
subject: High Energy Physics - Phenomenology (hep-ph)
subject: Mathematical Physics (math-ph)
subject: FOS: Physical sciences

description: We introduce a new formulation of the real-spectral-triple formalism in non-commutative geometry (NCG): we explain its mathematical advantages and its success in capturing the structure of the standard model of particle physics. The idea, in brief, is to represent $A$ (the algebra of differential forms on some possibly-noncommutative space) on $H$ (the Hilbert space of spinors on that space), and to reinterpret this representation as a simple super-algebra $B=A\oplus H$ with even part $A$ and odd part $H$. $B$ is the fundamental object in our approach: we show that (nearly) all of the basic axioms and assumptions of the traditional real-spectral-triple formalism of NCG are elegantly recovered from the simple requirement that $B$ should be a differential graded $\ast$-algebra (or "$\ast$-DGA"). Moreover, this requirement also yields other, new, geometrical constraints. When we apply our formalism to the NCG traditionally used to describe the standard model of particle physics, we find that these new constraints are physically meaningful and phenomenologically correct. In particular, these new constraints provide a novel interpretation of electroweak symmetry breaking that is geometric rather than dynamical. This formalism is more restrictive than effective field theory, and so explains more about the observed structure of the standard model, and offers more guidance about physics beyond the standard model.
description: 30 pages, no figures, matches JHEP version
Determination of Crystal Grain Orientations by Optical Microscopy at Textured Surfaces and Application
Creators: name: Lausch, D.
name: Gläser, M.
name: Hagendorf, C.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 567-572
description: In this contribution the method to determine the crystal orientation with the example of chemical
treated silicon wafers by means of optical microscopy recently introduced will be reviewed. The procedure represents
an easy method to obtain all relevant parameters to describe the crystal structure of the investigated material i.e. the
crystal grain orientation and the grain boundary character. The chemical treatment is a standard mono-texture for
solar cells well known in the solar industry. In general, this concept can also be applied to other crystalline materials,
i.e. GaAs, SiC etc., the only thing that needs to be adjusted is the texturing method to reveal specific crystal planes
and the calculation model. An application of this method will be shown with the example of the defect classification
of recombination active defects in mc-Si solar cell. The method combined with the shown application demonstrates a
simple and quick opportunity to improve the crystallization process and the quality of electronic devices by means of
an optical microscope and a chemical treatment of the material.
Explicit representations of 3-dimensional Sklyanin algebras associated to a point of order 2
Creators: name: Reich, Daniel J.
name: Walton, Chelsea
Publisher: name: arXiv
Year: 2015
Subjects: subject: Representation Theory (math.RT)
subject: Rings and Algebras (math.RA)
subject: FOS: Mathematics

description: The representation theory of a 3-dimensional Sklyanin algebra $S$ depends on its (noncommutative projective algebro-) geometric data: an elliptic curve $E$ in $\mathbb{P}^2$, and an automorphism $σ$ of $E$ given by translation by a point. Indeed, by a result of Artin-Tate-van den Bergh, we have that $S$ is module-finite over its center if and only if $σ$ has finite order. In this case, all irreducible representations of $S$ are finite-dimensional and of at most dimension $|σ|$. In this work, we provide an algorithm in Maple to directly compute all irreducible representations of $S$ associated to $σ$ of order 2, up to equivalence. Using this algorithm, we compute and list these representations. To illustrate how the algorithm developed in this paper can be applied to other algebras, we use it to recover well-known results about irreducible representations of the skew polynomial ring $\mathbb{C}_{-1}[x,y]$.
description: 21 pages. To appear in Involve, a journal for Mathematics
Advanced Metallization Concepts by Inkjet Printing
Creators: name: Hermans, J.
name: Papet, P.
name: Pacheco, K.
name: Brok, W.J.M.
name: Strahm, B.
name: Rochat, J.
name: Söderström, T.
name: Yao, Y.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 518-522
description: In the highly competitive photovoltaics market, manufacturers of solar cells and modules are under
constant pressure to reduce the cost per Wp. One of the main cost drivers of crystalline silicon based solar cells is the
front-grid metallization; this front-grid usually consists of screen-printed fingers and busbars. The multi-busbar solution,
SmartWire Connection Technology (SWCT), as developed within the Meyer Burger group, offers a significant reduction
in silver consumption by replacing the screen-printed busbars by coated copper wires embedded in a foil. A further
reduction in silver consumption is realized by replacing the screen-printed fingers with inkjet printed fingers. By inkjet
printing a silver nanoparticle ink, fingers are made with a width <35 μm and a thickness of a few micrometer, therefore
reducing the silver consumption to <10 mg. This combination of inkjet printed front-grid fingers with SWCT is
applicable for all cell types and concepts (mc-Si, Cz-Si, PERC, Heterojunction, etc.).
For front-grid metallization without any silver, a combination of an inkjet printed mask with Ni-Cu plating is used. With
this process flow, finger widths <20 μm are obtained. Ni-Cu plated heterojunction solar cells were made with record
efficiencies of 22.3% for 5inch and 21.7% for 6inch Cz-Si cells. Based on cost of ownership calculations, one critical
parameter is the consumption of masking ink. By improving the print strategy, the consumption of masking ink is
reduced by > 70% which even further improves the total cost of ownership.
Experimental rectification of entropy production by a Maxwell's Demon in a quantum system
Creators: name: Camati, P. A.
name: Peterson, J. P. S.
name: Batalhão, T. B.
name: Micadei, K.
name: Souza, A. M.
name: Sarthour, R. S.
name: Oliveira, I. S.
name: Serra, R. M.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Statistical Mechanics (cond-mat.stat-mech)
subject: FOS: Physical sciences

description: Maxwell's demon explores the role of information in physical processes. Employing information about microscopic degrees of freedom, this "intelligent observer" is capable of compensating entropy production (or extracting work), apparently challenging the second law of thermodynamics. In a modern standpoint, it is regarded as a feedback control mechanism and the limits of thermodynamics are recast incorporating information-to-energy conversion. We derive a trade-off relation between information-theoretic quantities empowering the design of an efficient Maxwell's demon in a quantum system. The demon is experimentally implemented as a spin-1/2 quantum memory that acquires information, and employs it to control the dynamics of another spin-1/2 system, through a natural interaction. Noise and imperfections in this protocol are investigated by the assessment of its effectiveness. This realization provides experimental evidence that the irreversibility on a non-equilibrium dynamics can be mitigated by assessing microscopic information and applying a feed-forward strategy at the quantum scale.
Development and Industrialization of High-Quality Multicrystalline Silicon Cast Ingots and Solar Cells
Creators: name: Xia, Z.
name: Guo, K.
name: Sun, H.
name: Pan, H.
name: Li, J.
name: Liu, R.
name: Cui, H.
name: Sidhu, R.
name: Zhang, B.
name: Xing, G.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 542-547
description: A unique high-quality casting technology of heterogeneous nucleation has been developed by Hareon Solar. Due to having
crystalline grains with characteristics of small, uniform size and vertical shape, mc-Si ingots grown by Hareon’s casting
technology have approximately one-tenth the dislocation density of conventional mc-Si ingots, which resulted in more uniform
and higher bulk lifetime. More importantly, the new technology is cost-competitive with conventional mc-Si casting, and has been
industrialized in Hareon’s production lines. Production data show that bulk improvement on wafer achieves 0.3-0.4% absolute
efficiency gain in solar cells, in which Voc, Isc and FF are all improved. Characterization and simulations indicated that all the
improvements are from high-quality silicon wafer: Voc and Isc increased due to bulk improvement, while FF enhanced because of
depletion region improvement. LID (light induced degradation) has been monitored in production for high-quality mc-Si solar
cells, and the data verify LID performance is also slightly better on high-quality cells with 0.9% rel. LID compared to
conventional cells with 1.0% rel. LID, which indicates that Hareon’s heterogeneous-nucleation casting technology has great LIDresist
and performance.
Opportunities for Silicon Epitaxy in Bulk Crystalline Silicon Photovoltaics
Creators: name: Récaman Payo, M.
name: Kuzma-Filipek, I.
name: Hajjiah, A.
name: Uruena, A.
name: Borgers, T.
name: Cornagliotti, E.
name: Tous, L.
name: Russell, R.
name: Singh, S.
name: Debucquoy, M.
name: Duerinckx, F.
name: Szlufcik, J.
name: Poortmans, J.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 497-502
description: This work presents an overview of the opportunities in bulk crystalline silicon photovoltaics that have
been explored using silicon epitaxy as doping technology. Epitaxy demonstrates to be an elegant and versatile
technology which brings a lot of new opportunities to further simplify and improve the design and performance of bulk
solar cells. Advantages are the doping profile flexibility, the reduced thermal budget, the absence of additional steps to
remove glassy layers or activate dopants, the simplified integration of local doping by means of selective epitaxy, and
the possibility of single-side deposition.
The results presented herein demonstrate the potential of epitaxy by applying the process in three cell structures to grow
a boron-doped layer. First, epitaxy is used to grow blanket doped layers as emitters on the full rear side of n-type PERT
cells. Second, selective epitaxy is applied to locally grow the interdigitated emitter in n-type IBC cells. Third, selective
epitaxy is applied to form the local BSF in p-type PERL cells. For each of these cell concepts, silicon epitaxy helped
to simplify the reference BBr3 diffusion-based process, while keeping high efficiencies: 20.5 % for n-type PERT (226
cm2 cell), 22.8 % for IBC (4 cm2 cell) and at least +0.5 mA/cm2 and +10 % escape reflectance for p-type PERL cells
compared to the standard PERC.
Polyhedral products, flag complexes and monodromy representations
Creators: name: Stafa, Mentor
Publisher: name: arXiv
Year: 2016
Subjects: subject: Algebraic Topology (math.AT)
subject: Group Theory (math.GR)
subject: FOS: Mathematics

description: This article presents a machinery based on polyhedral products that produces faithful representations of graph products of finite groups and direct products of finite groups into automorphisms of free groups $\rm Aut(F_n)$ and outer automorphisms of free groups $\rm Out(F_n)$, respectively, as well as faithful representations of products of finite groups into the linear groups $\rm SL(n,\mathbb Z)$ and $\rm GL(n,\mathbb Z)$. These faithful representations are realized as monodromy representations.
description: 20 pages
Universal Unitarity Triangle 2016 and the Tension Between $ΔM_{s,d}$ and $\varepsilon_K$ in CMFV Models
Creators: name: Blanke, Monika
name: Buras, Andrzej J.
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: High Energy Physics - Experiment (hep-ex)
subject: High Energy Physics - Lattice (hep-lat)
subject: FOS: Physical sciences

description: Motivated by the recently improved results from the Fermilab Lattice and MILC Collaborations on the hadronic matrix elements entering $ΔM_{s,d}$ in $B_{s,d}^0-\bar B_{s,d}^0$ mixing, we determine the Universal Unitarity Triangle (UUT) in models with Constrained Minimal Flavour Violation (CMFV). Of particular importance are the very precise determinations of the ratio $|V_{ub}|/|V_{cb}|=0.0864\pm0.0025$ and of the angle $γ=(63.0\pm 2.1)^\circ$. They follow in this framework from the experimental values of $ΔM_{d}/ΔM_s$ and of the CP-asymmetry $S_{ψK_S}$. As in CMFV models the new contributions to meson mixings can be described by a single flavour-universal variable $S(v)$, we next determine the CKM matrix elements $|V_{ts}|$, $|V_{td}|$, $|V_{cb}|$ and $|V_{ub}|$ as functions of $S(v)$ using the experimental value of $ΔM_s$ as input. The lower bound on $S(v)$ in these models, derived by us in 2006, implies then upper bounds on these four CKM elements and on the CP-violating parameter $\varepsilon_K$, which turns out to be significantly below its experimental value. This strategy avoids the use of tree-level determinations of $|V_{ub}|$ and $|V_{cb}|$ that are presently subject to considerable uncertainties. On the other hand if $\varepsilon_K$ is used instead of $ΔM_s$ as input, $ΔM_{s,d}$ are found significantly above the data. In this manner we point out that the new lattice data have significantly sharpened the tension between $ΔM_{s,d}$ and $\varepsilon_K$ within the CMFV framework. This implies the presence of new physics contributions beyond this framework that are responsible for the breakdown of the flavour universality of the function $S(v)$. We also present the implications of these results for $K^+\toπ^+ν\barν$, $K_L\toπ^0ν\barν$ and $B_{s,d}\toμ^+μ^-$ within the Standard Model.
description: 25 pages, 6 figures. v3: Numerical update in view of the modified results by the Fermilab-MILC collaboration with only minor impact on our results. References added
Modelling transition phenomena of scientific coauthorship networks
Creators: name: Xie, Zheng
name: Dong, Enming
name: Yi, Dongyun
name: Zhenzheng, Ouyang
name: Li, Jianping
Publisher: name: arXiv
Year: 2016
Subjects: subject: Physics and Society (physics.soc-ph)
subject: Social and Information Networks (cs.SI)
subject: FOS: Physical sciences
subject: FOS: Computer and information sciences

description: In a range of scientific coauthorship networks, transitions emerge in degree distributions, correlations between degrees and local clustering coefficients, etc. The existence of those transitions could be regarded as a result of the diversity in collaboration behaviours of scientific fields. A growing geometric hypergraph built on a cluster of concentric circles is proposed to model two specific collaboration behaviours, namely the behaviour of leaders and that of other members in research teams. The model successfully predicts the transitions, as well as many common features of coauthorship networks. Particulary, it realizes a process of deriving the complex "scale-free" property from the simple "yes/no" experiments. Moreover, it gives a reasonable explanation for the emergence of transitions with the difference of collaboration behaviours between leaders and other members. The difference emerges in the evolution of research teams, which synthetically addresses several specific factors of generating collaborations, namely the communications between research teams, the academic impacts and homophily of authors.
description: 19 Pages, 8 figures
Strategies for Ultra-Low Ag Consumption of Industrial n-Type Cells
Creators: name: Geerligs, L.J.
name: Lamers, M.W.P.E.
name: Burgers, A.R.
name: Rosca, V.
name: Dovrat, M.
name: Eytan, G.
name: Bertens, J.
name: Kivits, M.
name: O’Sullivan, B.
name: Debucquoy, M.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 523-527
description: For cost reduction as well as reduction of environmental footprint of solar cells, it is important to
reduce the use of silver (Ag) in metallisation. In this work we report on large reduction of Ag consumption for
industrial high-efficiency bifacial n-type cells with front and rear Ag grid, by modest process changes. Both frontand-
rear contacted, as well as metal-wrap-through cells, are considered.
The approaches explored are, for the front, seeding with a small amount of Ag fire-through ink or paste, and plate the
thus formed contact grid with copper (Cu). For the rear we use the same approach, or replace the Ag grid by a Al
layer deposted by physical vapour deposition (PVD). Front Ag consumption of 10mg per wafer and rear Ag
consumption of 20mg per wafer were demonstrated for inkjet seeding. The front finger width after inkjet seed&plate
is about 55m. With screen print or stencil print seeding a significant Ag reduction can be obtained too, but not to the
same level as with inkjet printing.
The replacement of a rear Ag grid by an Al contact layer deposited by PVD requires optimisation of the rear
dielectric in order to obtain good rear internal reflection. We model and experimentally demonstrate that a small
modification of the rear dielectric already yields an acceptable reflection.
In all experiments we find approximately equal or better efficiency than in the reference process; and also the cost of
ownership estimates are favorable. This shows that a better environmental footprint can be well combined with
improved production cost.
Evidences of spin-temperature in Dynamic Nuclear Polarization: an exact computation of the EPR spectrum
Creators: name: Caracciolo, Filippo
name: Filibian, Marta
name: Carretta, Pietro
name: Rosso, Alberto
name: De Luca, Andrea
Publisher: name: arXiv
Year: 2016
Subjects: subject: Strongly Correlated Electrons (cond-mat.str-el)
subject: Statistical Mechanics (cond-mat.stat-mech)
subject: FOS: Physical sciences

description: In dynamic nuclear polarization (DNP) experiments, the compound is driven out-of-equilibrium by microwave (MW) irradiation of the radical electron spins. Their stationary state has been recently probed via electron double resonance (ELDOR) techniques showing, at low temperature, a broad depolarization of the electron paramagnetic resonance (EPR) spectrum under microwave irradiation. In this theoretical manuscript, we develop a numerical method to compute exactly the EPR spectrum in presence of dipolar interactions. Our results reproduce the observed broad depolarisation and provide a microscopic justification for spectral diffusion mechanism. We show the validity of the spin-temperature approach for typical radical concentration used in dissolution DNP protocols. In particular once the interactions are properly taken into account, the spin-temperature is consistent with the non-monotonic behavior of the EPR spectrum with a wide minimum around the irradiated frequency.
description: 8 pages, 7 figures. Title and abstract changed
Rear-Emitter Silicon Heterojunction Solar Cells with Cerium Oxide-Doped Indium Oxide
Creators: name: Kobayashi, E.
name: Watabe, Y.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 472-474
description: The present study relates to rear-emitter heterojunction solar cells comprising transparent
conductive oxide (TCO) films of hydrogenated cerium oxide-doped indium oxide (ICO:H) which were deposited
by an ion-plating technique. The ICO:H films showed high mobility of exceeding 130 cm2V-1s-1 with relatively
low carrier density of ~2.0 x 1020 cm-3. Such properties resulted in novel characteristics of both low lateral
resistivity of 2.0 x 10-4  cm and high transmittance in the near-infrared region. The cell conversion efficiency of
23.4% and the single cell module efficiency of 22.0% were achieved in the rear emitter SHJ structure comprising
ICO:H films having lower hydrogen number density of less than 1.0 x 1021 atoms.
Cosmic Reionization On Computers. Properties of the Post-reionization IGM
Creators: name: Gnedin, Nickolay Y.
name: Becker, George D.
name: Fan, Xiaohui
Publisher: name: arXiv
Year: 2016
Subjects: subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: FOS: Physical sciences

description: We present a comparison between several observational tests of the post-reionization IGM and the numerical simulations of reionization completed under the Cosmic Reionization On Computers (CROC) project. The CROC simulations match the gap distribution reasonably well, and also provide a good match for the distribution of peak heights, but there is a notable lack of wide peaks in the simulated spectra and the flux PDFs are poorly matched in the narrow redshift interval 5.5
description: Accepted by ApJ
Analysis on Trial Production of Six Inch Silicon Heterojunction Solar Cells
Creators: name: Chen, M.Y.
name: Chang, J.
name: Chen, F.-S.
name: Shieh, W.-C.
name: Huang, M.-Y.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 484-486
description: Silicon heterojunction (SHJ) solar cell have potential to achieve high efficiencies. We reported that
minority carrier life time (MCLT) result indicate a wide range of 600 μs to 2600 μs and implied Voc data indicate a
wide range of 704 mV to 728 mV after a-Si deposited on texture wafer in trail production. This variation of MCLT
may be attributed to CZ wafer quality, texture process, or PECVD. The statistical data of efficiency is widely
distributed due to different batch process and configuration at the p-n heterojunction. The average efficiency of 21.23
% and Voc of 718 mV were achieved in the best batch of trail production. The highest efficiency SHJ solar cell of
21.6 % was achieved in trail production. The output power of 301.4 W and the module efficiency of 18.7 % were
achieved. After optimization of cell process, SHJ solar cell on 6 inch wafers with an average conversion efficiency of
22 % and Voc of 720 mV were achieved by AUO HJ-RD team.
Temperature Dependence of Void Formation in PERC Cells and their Spatially Resolved Detection by Combining Scanning Acoustic Microscopy and Electromluminescence Measurements
Creators: name: Horbelt, R.
name: Herguth, A.
name: Hahn, G.
name: Job, R.
name: Terheiden, B.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 427-432
description: Key aspect of this work is the investigation of local Al contacts with regard to void formation under a
non-uniform temperature of the solar cell during the firing process in the belt furnace. The impact on electrical
properties is determined by IV measurements and electroluminescence imaging (EL). Scanning acoustic microscope
(SAM) measurements on full cell area are used for a spatially resolved localization of voids. Combining all these
characterization techniques, the impact of thermal non-uniformity on contact formation can be determined spatially
resolved. Furthermore, a detailed investigation of BSF thickness of two different Al-pastes shows a clear correlation
with temperature distribution on the wafer during the co-firing process. All results demonstrate the importance of a
well optimized Al-paste and an absolutely uniform temperature on the Si wafer for an excellent formation of local
rear contacts.
Smooth analytic functions and model subspaces
Creators: name: Dyakonov, Konstantin M.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Complex Variables (math.CV)
subject: Functional Analysis (math.FA)
subject: FOS: Mathematics
subject: 30H10, 30H35, 30J05, 46E15, 46E35, 46J15, 47B35

description: The main themes of this survey are as follows: (a) the canonical (Riesz--Nevanlinna) factorization in various classes of analytic functions on the disk that are smooth up to its boundary, and (b) model subspaces (i.e., invariant subspaces of the backward shift) in the Hardy spaces $H^p$ and in BMOA. It is the interrelationship and a peculiar cross-fertilization between the two topics that we wish to highlight.
description: 24 pages; to appear in Harmonic Analysis, Partial Differential Equations, Banach Spaces, and Operator Theory (Volume 2). Celebrating Cora Sadosky's Life. Editors: S. Marcantognini, M. C. Pereyra, A. Stokolos and W. Urbina. AWM-Springer Series, Springer (2017)
XPS and XRR Study of Electronic Chemical Properties in Surface SiN Passivation on Crystalline Si
Creators: name: Yamashita, Y.
name: Ikeno, N.
name: Tokutake, H.
name: Tachibana, T.
name: Ohshita, Y.
name: Ogura, A.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 459-462
description: We investigated the electronic chemical properties of SiN passivation on crystalline Si by using X-ray
photoelectron spectroscopy (XPS) and X-ray reflection (XRR). From XPS analyses, N-rich component (N-Si-N) and
oxygen mixing were observed at the interface. We found that the N-rich layer varied before and after annealing process.
The longest lifetime is obtained after PDA600 in which the N-rich layer shows the thinnest with small peak height.
Therefore, the longer lifetime can be obtained as N concentration at the interface decreases. The film consisted of the
three SiN layers and one SiO2 layer comfirmed by XRR profile fitting. The interface thickness increases with annealing
high temperature. From density profiles, the density gradients were frequently observed at the surface and interface. The
longer lifetime can be obtained when the density gradient was small. Additionally, N concentration became higher at the
SiN (bottom)/SiO2 interface, which might produce the density gradient. Results of XPS and XRR suggested the N at the
interface significantly affected lifetime. We believe it is important to understand the electronic chemical properties at the
passivation interface to realize high efficiency Si solar cells.
Reduced-Wear Equipment for Diamond Wire Wafering
Creators: name: Peguiron, J.
name: Heiniger, C.
name: Habegger, S.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 386-389
description: Diamond-wire machining is currently substituting slurry machining in the manufacturing of silicon
wafers for photovoltaic applications. The main cost factor in diamond-wire wafering is the diamond wire itself. An
understanding of the mechanisms limiting the wire lifetime is therefore of great economic importance. In this work,
interaction of the wire with itself during winding cycles on the wire spool is identified as an important contribution to
wire wear. An innovative diamond wire management system (DWMS) is introduced. Results obtained using a
Meyer Burger multiple-wire saw equipped with this new wire management system demonstrate that damaging wire
contacts have been reduced to a minimum, enabling an increase of the diamond wire cutting performance with
respect to conventional equipment. The amount of increase which can be gained and the corresponding cost savings
depend on the wire type. In the presented example, a cost reduction of 10% to 20% per wafer (multicrystalline
silicon, 156mm format), based on today’s wire and wafer prices, can be expected from the achieved wire
performance increase.
Accurate Determination of the Emitter Saturation Current Density for Industrial p-Diffused Emitters
Creators: name: Min, B.
name: Dastgheib-Shirazi, A.
name: Altermatt, P.P.
name: Kurz, H.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 463-466
description: The application of the slope method of Kane and Swanson to determine the emitter saturation current
density J0e of industrial phosphorus diffused emitters on 10 Ωcm Cz wafers is investigated. Using numerical device
simulations, we show that the J0e should be extracted within a specific range of injected carrier density n in order to
avoid significant underestimation of J0e. This specific range can be determined directly from the measurement of the
effective lifetime eff. Our study shows that this approach yields significantly more precise J0e values than is
commonly obtained. For example, we show that the commonly applied injection levels such as n = 1×1015 cm-3 may
lead to an underestimation of J0e up to 44 %. Additionally, we show that if the Shockley-Read-Hall surface
recombination velocity parameter Sp is extracted from the imprecise J0e measurements and is inserted in device
simulations, such errors may cause a considerable overestimation of simulated cell efficiency. Our approach is
applicable to different types of emitters and base materials with different Shockley-Read-Hall bulk lifetime.
Interpreting Manufacturing Variance Using a Data Mining Approach
Creators: name: Evans, R.
name: Dore, J.
name: Van Voorthuysen, E.
name: Zhu, J.
name: Green, M.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 406-411
description: The term “data mining” is used to describe a broad family of statistical techniques from informal
exploratory and graphical methods through to sophisticated multivariate analysis. There are many published studies
related to data mining or advance statistical practices in other industries, but very little work published in the field of
PV manufacturing. The data mining study here uses a vectorial representation of cell to cell difference to examine
detailed relationships between the underlying cell performance parameters – predominantly the Isc, Voc, FF and Rs.
This lends new insights into the origin of variance in the manufacturing process, into the control of the manufacturing
line, and also the detailed operation of the cell itself.
A unified framework for deterministic and probabilistic D-stability analysis of uncertain polynomial matrices
Creators: name: Piga, Dario
name: Benavoli, Alessio
Publisher: name: arXiv
Year: 2016
Subjects: subject: Optimization and Control (math.OC)
subject: FOS: Mathematics

description: Many problems in systems and control theory can be formulated in terms of robust D-stability analysis, which aims at verifying if all the eigenvalues of an uncertain matrix lie in a given region D of the complex plane. Robust D-stability analysis is an NP-hard problem and many polynomial-time algorithms providing either sufficient or necessary conditions for an uncertain matrix to be robustly D-stable have been developed in the past decades. Despite the vast literature on the subject, most of the contributions consider specific families of uncertain matrices, mainly with interval or polytopic uncertainty. In this work, we present a novel approach providing sufficient conditions to verify if a family of matrices, whose entries depend polynomially on some uncertain parameters, is robustly D-stable. The only assumption on the stability region D is that its complement is a semialgebraic set described by polynomial constraints, which comprises the main important cases in stability analysis. Furthermore, the D-stability analysis problem is formulated in a probabilistic framework. In this context, the uncertain parameters characterizing the considered family of matrices are described by a set of non a priori specified probability measures. Only the support and some of the moments (e.g., expected values) are assumed to be known and, among all possible probability measures, we seek the one which provides the minimum probability of D-stability. The robust and the probabilistic D-stability analysis problems are formulated in a unified framework, and relaxations based on the theory of moments are used to solve the D-stability analysis problem through convex optimization. Application to robustness and probabilistic analysis of dynamical systems is discussed.
description: Extended version of the paper published in the IEEE Transactions on Automatic Control
Discreteness of $F$-jumping numbers at isolated non-Q-Gorenstein points
Creators: name: Graf, Patrick
name: Schwede, Karl
Publisher: name: arXiv
Year: 2016
Subjects: subject: Algebraic Geometry (math.AG)
subject: Commutative Algebra (math.AC)
subject: FOS: Mathematics

description: We show that the $F$-jumping numbers of a pair $(X, \mathfrak a)$ in positive characteristic have no limit points whenever the symbolic Rees algebra of $-K_X$ is finitely generated outside an isolated collection of points. We also give a characteristic zero version of this result, as well as a generalization of the Hartshorne-Speiser-Lyubeznik-Gabber stabilization theorem describing the non-$F$-pure locus of a variety.
An event mixing technique for Bose-Einstein correlations of two pions in photoproduction around 1 GeV
Creators: name: He, Qing-Hua
name: Fujimura, H.
name: Fukasawa, H.
name: Hashimoto, R.
name: Honda, Y.
name: Ishikawa, T.
name: Iwata, T.
name: Kaida, S.
name: Kasagi, J.
name: Kawano, A.
name: Kuwasaki, S.
name: Maeda, K.
name: Masumoto, S.
name: Miyabe, M.
name: Miyahara, F.
name: Mochizuki, K.
name: Muramatsu, N.
name: Nakamura, A.
name: Nawa, K.
name: Ogushi, S.
name: Okada, Y.
name: Onodera, Y.
name: Ozawa, K.
name: Sakamoto, Y.
name: Sato, M.
name: Shimizu, H.
name: Sugai, H.
name: Suzuki, K.
name: Tajima, Y.
name: Takahashi, S.
name: Taniguchi, Y.
name: Tsuchikawa, Y.
name: Yamazaki, H.
name: Yamazaki, R.
name: Yoshida, H. Y.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Nuclear Experiment (nucl-ex)
subject: FOS: Physical sciences

description: We have developed an event mixing technique to observe Bose-Einstein correlations (BEC) between two identical neutral pions produced in photo-induced reactions in the non-perturbative QCD energy region. It is found that the missing-mass consistency cut and the pion-energy cut are essential for the event mixing method to effectively extract BEC observables. A Monte Carlo (MC) simulation is used to validate these constraints and confirms the efficiency of this method. Our work paves the way for similar BEC studies at lower energies where the multiplicity of emitted bosons is limited.
Simulation-based Methods for Development, Training, Test and Validation of Automated Driving
Creators: name: Eberle, Ulrich
name: Weber, Nico
name: Thiem, Christoph
name: Berger, Stefan
name: Frank, Sebastian
Publisher: name: Zenodo
Year: 2023
Subjects: Simulation
Validation
Artificial Intelligence
Automated Driving
Adaptive-Replay-to-Sim
Automotive

description: Invited keynote presentation at "KI-Wissen" Open Project Day 2023 on Adaptive-Replay-to-Sim (ARTS) and novel simulation-based methods for the development, training, test and validation of automotive Artificial Intelligence and Automated Driving Systems. 'KI Wissen' is a flagship project on knowledge-based automotive AI by the German Federal government comprising partners from industry and academia.
Investigating multi-channel quantum tunneling in heavy-ion fusion reactions with Bayesian spectral deconvolution
Creators: name: Hagino, K.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Nuclear Theory (nucl-th)
subject: Nuclear Experiment (nucl-ex)
subject: Data Analysis, Statistics and Probability (physics.data-an)
subject: FOS: Physical sciences

description: Excitations of colliding nuclei during a nuclear reaction considerably affect fusion cross sections at energies around the Coulomb barrier. It has been demonstrated that such channel coupling effects can be represented in terms of a distribution of multiple fusion barriers. We here apply a Bayesian approach to analyze the so called fusion barrier distributions. This method determines simultaneously the barrier parameters and the number of barriers. We particularly investigate the $^{16}$O+$^{144}$Sm and $^{16}$O+$^{154}$Sm systems in order to demonstrate the effectiveness of the method. The present analysis indicates that the fusion barrier distribution for the former system is most consistent with three fusion barriers, even though the experimental data show only two distinct peaks.
description: 6 pages, 4 eps figures. The version to appear in Phys. Rev. C (rapid communications)
Efficiency Potential Simulation for an Industrially Feasible LFC-PERC Concept with Sensitivity Analysis on Crucial Cell Parameters
Creators: name: Wöhrle, N.
name: Greulich, J.
name: Graf, M.
name: Hermle, M.
name: Rein, S.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 421-426
description: PERC solar cells are the upcoming generation of industrial-scale silicon solar cells. Amongst others, the PERC concept
with laser-fired rear-side contacts (LFC) is one of the promising process routes. It is known that the laser damage induced
underneath the LFC contacts influences cell efficiency. This work quantifies the impact of the laser damage using SDevice
simulations and evaluates the efficiency potential of LFC cells as a function of the laser damage within a sensitivity analysis.
Including an additional set of parameter variations, namely base doping, bulk lifetime and contact pitch, we frame
explicit design rules and identify process windows for an industrial LFC-PERC solar cell reaching more than 22% conversion
efficiency whose technological implementation seems to be feasible on a timescale of three years.
Robust $H_\infty$ Coherent-Classical Estimation of Linear Quantum Systems
Creators: name: Roy, Shibdas
name: Petersen, Ian R.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Systems and Control (eess.SY)
subject: Optimization and Control (math.OC)
subject: Quantum Physics (quant-ph)
subject: FOS: Electrical engineering, electronic engineering, information engineering
subject: FOS: Mathematics
subject: FOS: Physical sciences

description: We study robust $H_\infty$ coherent-classical estimation for a class of physically realizable linear quantum systems with parameter uncertainties. Such a robust coherent-classical estimator, with or without coherent feedback, can yield better disturbance-to-error performance than the corresponding robust purely-classical estimator for an uncertain plant. Moreover, coherent feedback allows for such a robust coherent-classical estimator to be more robust to uncertainty in comparison to the robust classical-only estimator.
description: Minor corrections, 6 pages, 8 figures, Australian Control Conference 2016
Loop optimization for tensor network renormalization
Creators: name: Yang, Shuo
name: Gu, Zheng-Cheng
name: Wen, Xiao-Gang
Publisher: name: arXiv
Year: 2015
Subjects: subject: Strongly Correlated Electrons (cond-mat.str-el)
subject: Statistical Mechanics (cond-mat.stat-mech)
subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: We introduce a tensor renormalization group scheme for coarse-graining a two-dimensional tensor network that can be successfully applied to both classical and quantum systems on and off criticality. The key innovation in our scheme is to deform a 2D tensor network into small loops and then optimize the tensors on each loop. In this way, we remove short-range entanglement at each iteration step and significantly improve the accuracy and stability of the renormalization flow. We demonstrate our algorithm in the classical Ising model and a frustrated 2D quantum model.
description: 15 pages, 11 figures, accepted version for Phys. Rev. Lett
$L^2$-Stability of Traveling Wave Solutions to Nonlocal Evolution Equations
Creators: name: Lang, Eva
name: Stannat, Wilhelm
Publisher: name: arXiv
Year: 2016
Subjects: subject: Probability (math.PR)
subject: Dynamical Systems (math.DS)
subject: FOS: Mathematics

description: Stability of the traveling wave solution to a general class of one-dimensional nonlocal evolution equations is studied in $L^2$-spaces, thereby providing an alternative approach to the usual spectral analysis with respect to the supremum norm. We prove that the linearization around the traveling wave solution satisfies a Lyapunov-type stability condition in a weighted space $L^2(ρ)$ for a naturally associated density $ρ$. The result can be applied to obtain stability of the traveling wave solution under stochastic perturbations of additive or multiplicative type. For small wave speeds, we also prove an alternative Lyapunov-type stability condition in $L^2(\mathfrak{m})$, where $\mathfrak{m}$ is the symmetrizing density for the traveling wave operator, which allows to derive a long-term stochastic stability result.
description: in comparison to first version setting in subsection 3.3 changed to stochastic neural field equations with multiplicative noise