title: ÐÐ²ÑÐ¾Ð¼Ð°ÑÐ¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð°Ñ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ° Ð¿Ð»Ð°Ð·Ð¼Ð¾Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Automated plasma chemical etching plant
Creators: name: ÐÐ»ÐµÐºÑÐµÐµÐ², ÐÐ»Ð°Ð´Ð¸ÑÐ»Ð°Ð²
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð°Ð²ÑÐ¾Ð¼Ð°ÑÐ¸Ð·Ð°ÑÐ¸Ñ
Ð¿Ð»Ð°Ð·Ð¼Ð¾Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
Ð°Ð»Ð³Ð¾ÑÐ¸ÑÐ¼
ÑÐ¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
ÑÐµÐ°ÐºÑÐ¾Ñ
ÐºÐ°Ð¼ÐµÑÐ°
Ð¼Ð°Ð½Ð¸Ð¿ÑÐ»ÑÑÐ¾Ñ
automation
plasma chemical etching
algorithm
control
reactor
chamber
manipulator

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð°Ð²ÑÐ¾Ð¼Ð°ÑÐ¸Ð·Ð°ÑÐ¸Ð¸ ÑÐ°Ð±Ð¾ÑÑ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ STE ICP200E. ÐÐ°Ð´Ð°ÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐµÑÐ°Ð»Ð¸ÑÑ Ð² ÑÐ¾Ð´Ðµ ÑÐ°Ð±Ð¾ÑÑ: â Ð°Ð½Ð°Ð»Ð¸Ð· ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¸ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ STE ICP200E, â ÑÐ¾ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¾Ð¹ Ð¸ Ð²Ð°ÐºÑÑÐ¼Ð½Ð¾Ð¹ ÑÑÐµÐ¼Ñ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸, â ÑÐ¾ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ ÑÑÐµÐ¼Ñ ÑÐ¸ÑÑÐµÐ¼Ñ ÑÐ¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸, â Ð½Ð°Ð¿Ð¸ÑÐ°Ð½Ð¸Ðµ Ð°Ð»Ð³Ð¾ÑÐ¸ÑÐ¼Ð° ÑÐ¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸, â Ð½Ð°Ð¿Ð¸ÑÐ°Ð½Ð¸Ðµ ÐºÐ¾Ð´Ð° Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ñ Ð°Ð²ÑÐ¾Ð¼Ð°ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÐ¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð² ÑÑÐµÐ´Ðµ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ GX Works3. Ð Ð°Ð±Ð¾ÑÐ° Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð°ÑÑ Ð½Ð° Ð±Ð°Ð·Ðµ ÐÐÐ âÐÐ¢Ðâ, Ð³Ð´Ðµ ÑÐ¾Ð±Ð¸ÑÐ°Ð»Ð°ÑÑ Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð°Ñ ÑÐ°ÑÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð° ÑÐ°Ð±Ð¾ÑÑ: Ð±ÑÐ» Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½ Ð°Ð½Ð°Ð»Ð¸Ð· ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ð¸ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ STE ICP200E, ÑÐ¾Ð±ÑÐ°Ð½Ð° Ð¸Ð½ÑÐ¾ÑÐ¼Ð°ÑÐ¸Ñ Ð¾ ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¾Ð¹ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÑÑÐµÐ¹ Ð¿ÑÐ¾Ð¸ÑÑÐ¾Ð´ÑÑÐµÐ³Ð¾ Ð¿ÑÐ¾ÑÐµÑÑÐ° Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ, Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ñ ÑÐµÑÑÐ¾Ð²ÑÐµ Ð²ÐºÐ»ÑÑÐµÐ½Ð¸Ñ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ Ð½Ð° Ð±Ð°Ð·Ðµ Ð½Ð°Ð¿Ð¸ÑÐ°Ð½Ð½Ð¾Ð¹ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ñ Ð°Ð²ÑÐ¾Ð¼Ð°ÑÐ¸Ð·Ð°ÑÐ¸Ð¸. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð±ÑÐ» Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½ Ð¿Ð¾Ð´ÑÐ¾Ð±Ð½ÑÐ¹ Ð°Ð½Ð°Ð»Ð¸Ð· ÑÑÑÑÐ¾Ð¹ÑÑÐ²Ð° ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ, ÑÑÐ¾ Ð¿Ð¾Ð·Ð²Ð¾Ð»Ð¸Ð»Ð¾ ÑÐ¾ÑÑÐ°Ð²Ð¸ÑÑ Ð°Ð»Ð³Ð¾ÑÐ¸ÑÐ¼ ÑÐ¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐ¸ Ð¸ Ð¿ÐµÑÐµÐ½ÐµÑÑÐ¸ ÐµÐ³Ð¾ Ð² ÑÑÐµÐ´Ñ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ GX Works3, Ð¿ÑÐ¾Ð²ÐµÑÐ¸Ð² ÑÐ°Ð±Ð¾ÑÑ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ñ Ð½Ð° ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ.
description: The given work is devoted to the automation of the operation of the STE ICP200E plasma chemical etching unit. The research set the following goals: â analysis of the design of the STE ICP200E plasma chemical etching unit, â drawing up the technological and vacuum scheme of the installation, â drawing up a diagram of the installation control system, â writing the installation control algorithm, â writing the code of the automatic control program in the GX Works3 programming environment. The work was carried out on the basis of CJSC âSemiTEqâ, where a significant part of the work material was collected: the design of the STE ICP200E installation was analyzed, information about the physical component of the plasma chemical etching process was collected, test switch-ons of the unit were carried out on the basis of a written automation program. As a result, a detailed analysis of the plasma chemical etching plant was carried out, which made it possible to compile an algorithm for controlling the unit and transfer it to the GX Works3 programming environment, checking the operation of the program on the unit.