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title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: The characteristics investigation of the photosensitive CMOS microchip
Creators: name: ÐÐ»Ð¸Ð¼Ð¾Ð²Ð°, ÐÐºÐ°ÑÐµÑÐ¸Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: ÑÐ¾ÑÐ¾ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½Ð°Ñ ÐÐÐÐ Ð¼Ð¸ÐºÑÐ¾ÑÑ ÐµÐ¼Ð°
ÑÐ¾ÑÐ¾ÑÑÐµÐ¹ÐºÐ° ÑÐ¾ ÑÐºÐ¾Ð»ÑÐ·ÑÑÐ¸Ð¼ Ð·Ð°ÑÐ²Ð¾ÑÐ¾Ð¼
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ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð°Ñ Ñ Ð°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ° ÐºÐ²Ð°Ð½ÑÐ¾Ð²Ð¾Ð¹ ÑÑÑÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ Ð¼Ð¸ÐºÑÐ¾ÑÑ ÐµÐ¼Ñ
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ÐºÑÑÑÐ¸Ð·Ð½Ð° Ð¿ÑÐµÐ¾Ð±ÑÐ°Ð·Ð¾Ð²Ð°Ð½Ð¸Ñ ÐÐ¦Ð
photosensitive CMOS chip
rolling shutter photocell
global shutter photocell
pinned diode
photonic calibration method
spectral characteristic of the chip quantum efficiency
photocell gain of the conversion
read noise
ADC gain of the conversion

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description: The research object is photosensitive CMOS microchip (PCM) with four types of photocells on a single chip, developed by JSC Â«SPE Â«ELARÂ». The purpose of the work is to investigate the photoelectric characteristics of the PCM with different types of pixels, varying according to the type of shutter and transfer transistor. The work resulted in the definition of the following characteristics for each type of photocell: photon calibration curve, light signal characteristic and quantum efficiency spectral characteristic. Based on the output dependencies, the main photoelectric parameters of the PCM were determined â steepness of pixel conversion and analogue-to-digital path readout noise, saturation signal and charge capacity of photosensitive cells. The dependence of the obtained data on the type of gate and on the topology of the transfer transistor was examined. For researched dies, a number of options for optimizing the operating mode and design are offered. The results obtained are novel and pertinent to the company, as they contain information about the operation of the photosensitive CMOS chip with a previously unexplored technology, namely 0.18 Î¼m. The development of future PCMs will incorporate the results of this research.