Thesis Abstract. Circuit Solutions for Sensitivity Increasinf of Piezoresistive Pressure Sensors
Creators: name: Basov, Mikhail
Publisher: name: Zenodo
Year: 2022
Subjects: pressure sensor
mems
sensitivity
engineering
microelectronics
fabrication
modeling
silicon
membrane

description: This is the short version of my Thesis in English. The topic of this thesis is devoted to the use of various solutions for electrical circuits of pressure sensor (PS) chips. The piezoresistive differential amplifier (PDA) with 4 piezoresistors (PR) and piezoresistive differential amplifier with negative feedback loop (PDA-NFL) with 8 PRs used as electrical circuit. The use of deformable and non-deformable bipolar junction transistors (BjT) with vertical structure npn-type (V-NPN) and lateral structure pnp-type (L-PNP) is considered. The first, the output characteristics of developed piezoresistive PDA chip are researched in the comparative analysis relative to analog TMU18 with Wheatstone bridge (WB) circuit for 60 kPa pressure range. The analysis confirmed the possibility of sensitivity increasing by 2.2 times while maintaining the input conditions for geometry of mechanical structure and supply voltage. The second, the output characteristics of the developed piezoresistive PDA-NFL chip are researched in the comparative analysis relative to analog IPD60 with WB circuit for 60, 160 and 600 kPa pressure ranges. The analysis confirmed the possibility of sensitivity increasing by 3.5 times while maintaining the input conditions for geometry of mechanical structure, supply voltage and low errors; or minimization of chip area by 2.4 times while maintaining sensitivity. The possibility of reducing the noise of zero output signal by 20 times and the errors of temperature characteristics by more than an order relative to the parameters of piezoresistive PDA chip has been confirmed. The third, the output characteristics of ultra-highly sensitive small-sized PDA-NFL chip confirmed the possibility of simultaneously sensitivity increasing by 5.8 times and reducing chip area by 2.4 times relative to the analog IPD52 with WB circuit for 10 kPa range and while maintaining supply voltage and low errors.
description: {"references": ["M. Basov, \"High-sensitivity MEMS pressure sensor utilizing bipolar junction transistor with temperature compensation,\" Sensors and Actuators A: Physical, vol. 303, 111705, 2020", "M. Basov, \"Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging from -1 to 1 kPa,\" IEEE Sensors Journal, vol. 21, no. 4, pp. 4357 \u2013 4364, 2021", "M. Basov, \"Development of High-Sensitivity Pressure Sensor with On-chip Differential Transistor Amplifier,\" J. Micromech. Microeng., vol. 30, no. 6, 065001, 2020", "M. Basov, \"High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPa,\" Physica scipta, vol. 96, no. 6, 065705, 2021", "M. Basov, D. Prigodskiy, \"Development of High-Sensitivity Piezoresistive Pressure Sensors for -0.5\u2026+0.5 kPa,\" Journal of Micromechanics and Microengineering, vol. 30, no. 10, 105006, 2020", "M. Basov, D. Prigodskiy, \"Investigation of High Sensitivity Piezoresistive Pressure Sensors at Ultra-Low Differential Pressures,\" IEEE Sensors Journal, vol. 20, no. 14, pp. 7646-7652, 2020", "M.V. Basov, D.M. Prigodskiy, D.A. Holodkov, \"Modeling of Sensitive Element for Pressure Sensor Based on Bipolar Piezotransistor,\" Sensors and Systems, vol. 6, pp. 17-24, 2017", "M.V. Basov, D.M. Prigodskiy, \"Investigation of a Sensitive Element for the Pressure Sensor Based on a Bipolar Piezotransistor,\" Nano- and Microsystem Technology, vol. 19, no. 11, pp. 685-693, 2017", "Basov, \"Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor\", IEEE Sensors, Sydney, Australia, 2021", "M. Basov, \"Pressure sensor chip utilizing electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa\", XII International Scientific and Technical Conference \u00abMicro-, and Nanotechnology in Electronics\u00bb, Elbrus, Russia, 2021", "M. Basov, \"Highly sensitive and temperature compensated chip based on a BJT with a horizontal p-n-p structure\", XIV Russian conference of physical semiconductor, Novosibirsk, Russia, 2019", "M. Basov, \"Development of pressure sensing element based on bipolar transistor\", V All-Russian scientific youth conference \u00abActual problems of nano- and microelectronics\u00bb, Ufa, Russia, 2018", "M. Basov, \"Development of pressure sensors based on bipolar transistor\", XIII Russian conference of physical semiconductor, Yekaterinburg, Russia, 2018"]}