title: Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ Ð¿Ð¾ÐºÑÑÑÐ¸Ð¹ ÐºÐ°ÑÐ±Ð¸Ð´Ð¾Ð¿Ð¾Ð´Ð¾Ð±Ð½ÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð² Ð¸Ð· Ð¿Ð»Ð°Ð·Ð¼Ñ Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð±Ð°ÑÑÐµÑÐ½Ð¾Ð³Ð¾ ÑÐ°Ð·ÑÑÐ´Ð° Ð¿ÑÐ¸ Ð°ÑÐ¼Ð¾ÑÑÐµÑÐ½Ð¾Ð¼ Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Development of carbide-based films deposition technology using dielectric barrier discharge at atmospheric pressure
Creators: name: ÐÐµÐ»ÐºÐ¾Ð½ÑÐ½, ÐÐ°ÑÑÐ¹Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ð¹ Ð±Ð°ÑÑÐµÑÐ½ÑÐ¹ ÑÐ°Ð·ÑÑÐ´
Ð°ÑÐ¼Ð¾ÑÑÐµÑÐ½Ð¾Ðµ Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ðµ
ÑÐ¾Ð½ÐºÐ¸Ðµ Ð¿Ð»ÐµÐ½ÐºÐ¸
Ð¿Ð»Ð°Ð·Ð¼Ð¾Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ðµ Ð¸Ð· Ð³Ð°Ð·Ð¾Ð²Ð¾Ð¹ ÑÐ°Ð·Ñ
ÐºÐ°ÑÐ±Ð¸Ð´ ÐºÑÐµÐ¼Ð½Ð¸Ñ
Ð¾ÐºÑÐ¸Ð´ ÐºÑÐµÐ¼Ð½Ð¸Ñ
ÑÐµÐ½ÑÐ³ÐµÐ½Ð¾Ð²ÑÐºÐ°Ñ ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð°Ñ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½Ð°Ñ Ð¤ÑÑÑÐµ-ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
dielectric barrier discharge
atmospheric pressure
thin films
plasma enhanced chemical vapour deposition
silicon carbide
silicon oxide
x-ray photoelectron spectroscopy
fourier-transform infrared spectroscopy

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description: The aim of this work was to investigate a deposition process of thin car-bide-based films on monocrystalline silicon substrates using a dielectric barrier discharge system at atmospheric pressure, and to determine an influence of technological parameters of the process on composition and deposition rate of the films. Plasma enhanced chemical vapor deposition technique with remote plasma in a plasmajet system was used for the deposition. This work was fo-cused on using hexamethyldisiloxane as a gaseous precursor for the carbide-based films deposition. High temperature of the substrate holder was also a new promising approach to produce carbides. X-ray photoelectron spectroscopy was used to determine atomic compo-sition of the filmsâ surface and calculate the relative atomic concentration of the detected elements (carbon, silicon, and oxygen). Fourier-transform infrared spectroscopy was used to define the evidence of chemical bindings in the mate-rial. The dependence of technological parameters on the composition and dep-osition rate of the films was also measured using this method. As the result, the dependences of technological parameters (substrate holder temperature, substrate-to-plasmajet distance, gas flow rate and applied electrical power) on the chemical composition and deposition rate of the films were obtained. In addition, APDBD plasmajet system for thin films deposition was designed.