title: Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ð¿Ð»Ð°Ð·Ð¼Ð¾Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÐºÐ°ÑÐ±Ð¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð¼ÐµÐ¼Ð±ÑÐ°Ð½ ÐµÐ¼ÐºÐ¾ÑÑÐ½ÑÑ Ð´Ð°ÑÑÐ¸ÐºÐ¾Ð² Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ñ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Silicon carbide plasma-chemical etching for capacitive pressure sensors design
Creators: name: ÐÐµÐ²Ð¸Ð½Ð°, Ð¡Ð²ÐµÑÐ»Ð°Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2022
Subjects: ÐÐ¾Ð¼Ð¿ÑÑÑÐµÑÐ½Ð¾Ðµ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ
Ð¢ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð²
ÐÑÐµÐ¼Ð½Ð¸Ð¹, ÐºÐ°ÑÐ±Ð¸Ð´Ñ
Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ°Ñ-ÑÐ¼Ð¸ÑÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ð°
optical emission spectroscopy
membrane

description: Ð¢ÐµÐ¼Ð° Ð²ÑÐ¿ÑÑÐºÐ½Ð¾Ð¹ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ: Â«Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÐºÐ°ÑÐ±Ð¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð¼ÐµÐ¼Ð±ÑÐ°Ð½ ÐµÐ¼ÐºÐ¾ÑÑÐ½ÑÑ Ð´Ð°ÑÑÐ¸ÐºÐ¾Ð² Ð´Ð°Ð²Ð»ÐµÐ½Ð¸ÑÂ». Ð Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÐµ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¾ÑÑ Ð¸Ð·ÑÑÐµÐ½Ð¸Ðµ Ð¿ÑÐ¾ÑÐµÑÑÐ° Ð³Ð»ÑÐ±Ð¾ÐºÐ¾Ð³Ð¾ Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ (ÐÐ¥Ð¢) Ð¼Ð¾Ð½Ð¾ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÐºÐ°ÑÐ±Ð¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ (SiC) Ð² SF6/O2 Ð¸Ð½Ð´ÑÐºÑÐ¸Ð²Ð½Ð¾-ÑÐ²ÑÐ·Ð°Ð½Ð½Ð¾Ð¹ Ð¿Ð»Ð°Ð·Ð¼Ðµ. ÐÐµÑÐ¾Ð´Ð¾Ð¼ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð¹-ÑÐ¼Ð¸ÑÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸ (ÐÐ­Ð¡) Ð±ÑÐ»Ð¾ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð²ÑÑÐ¾ÐºÐ¾ÑÐ°ÑÑÐ¾ÑÐ½Ð¾Ð¹ (ÐÐ§) Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸, Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ñ ÑÐ¼ÐµÑÐµÐ½Ð¸Ñ, Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ñ Ð² ÑÐµÐ°ÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÐºÐ°Ð¼ÐµÑÐµ Ð¸ ÑÐ¾ÑÑÐ°Ð²Ð° Ð³Ð°Ð·Ð¾Ð²Ð¾Ð¹ ÑÐ¼ÐµÑÐ¸ Ð½Ð° Ð¿ÑÐ¾ÑÐµÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ SiC. ÐÑÐ» ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½ Ð¿ÑÐ¾ÑÐµÑÑ ÐÐ¥Ð¢, Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¹ Ð´Ð»Ñ Ð¼Ð°ÑÑÐ¾Ð²Ð¾Ð³Ð¾ Ð¿ÑÐ¾Ð¸Ð·Ð²Ð¾Ð´ÑÑÐ²Ð° Ð¼ÐµÐ¼Ð±ÑÐ°Ð½ Ð¸Ð· ÐºÐ°ÑÐ±Ð¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ, ÑÐ¾Ð»ÑÐ¸Ð½Ð¾Ð¹ Ð¼ÐµÐ½ÐµÐµ 20Â Ð¼ÐºÐ¼, ÑÐ¾ ÑÐºÐ¾ÑÐ¾ÑÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¿Ð¾ÑÑÐ´ÐºÐ° 1,2 Ð¼ÐºÐ¼/Ð¼Ð¸Ð½ Ð¸ ÑÐµÑÐ¾ÑÐ¾Ð²Ð°ÑÐ¾ÑÑÑÑ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð¼ÐµÐ½ÐµÐµ 0,7Â Ð½Ð¼. ÐÐ»Ð¸ÑÐ½Ð¸Ðµ ÑÑÑÐµÐºÑÐ° Ð¼Ð¸ÐºÑÐ¾ÑÑÐµÐ½ÑÐ¸Ð½Ð³Ð° Ð½Ð° ÑÐ»ÐµÐºÑÑÐ¾Ð¼ÐµÑÐ°Ð½Ð¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ñ ÐµÐ¼ÐºÐ¾ÑÑÐ½Ð¾Ð³Ð¾ Ð´Ð°ÑÑÐ¸ÐºÐ° Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ñ Ð±ÑÐ»Ð¾ Ð¸Ð·ÑÑÐµÐ½Ð¾ Ð¿Ð¾ÑÑÐµÐ´ÑÑÐ²Ð¾Ð¼ ÐºÐ¾Ð¼Ð¿ÑÑÑÐµÑÐ½Ð¾Ð³Ð¾ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ. ÐÑÐ»Ð¸ ÑÑÐ°Ð²Ð½ÐµÐ½Ñ ÑÐ»ÐµÐºÑÑÐ¾Ð¼ÐµÑÐ°Ð½Ð¸ÑÐµÑÐºÐ¸Ðµ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ Ð¸Ð´ÐµÐ°Ð»ÑÐ½Ð¾Ð¹ Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ñ Ð¸Ð· SiC Ð¸ Ð¸Ð· Si Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½Ð¾Ð¹ ÑÐµÐ°Ð»ÑÐ½Ð¾Ð¹ Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ñ Ñ Ð¼Ð¸ÐºÑÐ¾ÑÑÐµÐ½ÑÐ¸Ð½Ð³Ð¾Ð¼. Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ñ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¸, ÑÑÐ¾ ÑÑÑÐµÐºÑ Ð¼Ð¸ÐºÑÐ¾ÑÑÐµÐ½ÑÐ¸Ð½Ð³Ð° Ð¾ÐºÐ°Ð·ÑÐ²Ð°ÐµÑ Ð½ÐµÐ³Ð°ÑÐ¸Ð²Ð½Ð¾Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð½Ð° Ð¿ÑÐ¾ÑÐ½Ð¾ÑÑÐ½ÑÐµ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ñ. Ð¢Ð°Ðº Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ðµ Ð¿Ð¾ ÐÐ¸Ð·ÐµÑÑ Ð¿ÑÐ¸ Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ð¸ 0,2Â ÐÐÐ° Ñ ÑÐµÐ°Ð»ÑÐ½Ð¾Ð¹ Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ñ 183Â ÐÐÐ°, ÐºÐ¾Ð³Ð´Ð° Ñ Ð¸Ð´ÐµÐ°Ð»ÑÐ½Ð¾Ð¹ Ð¸Ð· SiC Ð²ÑÐµÐ³Ð¾ 83Â ÐÐÐ°, Ð° Ð¸Ð· Si â 82,7Â ÐÐÐ°. ÐÐ´Ð½Ð°ÐºÐ¾, Ð¿Ð¾ ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½ÑÐ¼ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ°Ð¼ ÑÐµÐ°Ð»ÑÐ½Ð°Ñ Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ð° Ð¿ÑÐµÐ²Ð¾ÑÑÐ¾Ð´Ð¸Ñ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÐ¹ Ð°Ð½Ð°Ð»Ð¾Ð³. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð±ÑÐ»Ð° ÑÐ¾Ð·Ð´Ð°Ð½Ð° Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ð° Ð¸Ð· SiC, Ð° Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¼Ð°ÑÐµÐ¼Ð°ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ð¸ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÑ Ð´Ð°Ð½Ð½ÑÑ Ð±ÑÐ» ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½ ÑÐ¸ÑÑÐ¾Ð²Ð¾Ð¹ Ð´Ð²Ð¾Ð¹Ð½Ð¸Ðº ÐµÐ¼ÐºÐ¾ÑÑÐ½Ð¾Ð³Ð¾ Ð´Ð°ÑÑÐ¸ÐºÐ° Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ñ, Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ ÐºÐ¾ÑÐ¾ÑÐ¾Ð³Ð¾ Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ ÑÐ°Ð·ÑÐ°Ð±Ð°ÑÑÐ²Ð°ÑÑ Ð¸ ÑÐ¾Ð·Ð´Ð°Ð²Ð°ÑÑ Ð¼ÐµÐ¼Ð±ÑÐ°Ð½Ñ Ð¿Ð¾Ð´ Ð»ÑÐ±ÑÐµ Ð·Ð°Ð´Ð°ÑÐ¸ Ñ Ð¼Ð¸Ð½Ð¸Ð¼Ð°Ð»ÑÐ½ÑÐ¼ ÐºÐ¾Ð»Ð¸ÑÐµÑÑÐ²Ð¾Ð¼ Ð²ÑÐµÐ¼ÐµÐ½Ð½ÑÑ Ð¸ ÑÐ¸Ð½Ð°Ð½ÑÐ¾Ð²ÑÑ Ð·Ð°ÑÑÐ°Ñ.
description: The subject of the graduation work is âSilicon carbide plasma-chemical etching for capacitive pressure sensors designâ. In this work study of silicon carbide (SiC) plasma-chemical etching (PCE) using SF6/O2 inductively coupled plasma (ICP) was obtained. Optical emission spectroscopy was used to examine the dependence of etching process of SiC itself on bias voltage, RF power, gas mixture containment and pressure in the reactive chamber. Optimized for mass manufacturing PCE process of 20 Î¼m thick SiC was developed. The speed of this process gains about 1.2 Î¼m/min and surface roughness is less than 0.7 nm. Influence of microtrenching effect on electromechanical properties of capacitive pressure sensor membrane was studied with computer simulation method. Electromechanical properties of created (real) SiC membrane and ideal membranes of SiC and silicon (Si) were compared. According to the results, microthrenching effect occurs negative impact to the membrane strength properties. Von Mises stress at 0.2Â MPa applied pressure was 183Â MPa for real SiC membrane, while it was 83Â MPa and 82.7 MPa for ideal SiC and Si membranes respectively. However, sensitivity of real membrane exceeded silicon analog. As the result, the SiC membrane for capacitive pressure sensors was created. Based on experimental data and results of computer simulation the digital twin of capacitive pressure sensor was developed. What allows developing and creating membranes for different uses minimizing process time and the product cost.