title: ÐÐ¸ÑÐ»Ð¾ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÑÑÑÐºÑÑÑÐ° Ð¾Ð±ÑÐµÐ¼Ð½ÑÑ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð½Ð¸ÑÑÐ¸Ð´Ð° Ð°Ð»ÑÐ¼Ð¸Ð½Ð¸Ñ, Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÑ ÑÑÐ±Ð»Ð¸Ð¼Ð°ÑÐ¸Ð¾Ð½Ð½ÑÐ¼ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼, Ð¿Ð¾ Ð´Ð°Ð½Ð½ÑÐ¼ Ð¿ÑÐ¾ÑÐ²ÐµÑÐ¸Ð²Ð°ÑÑÐµÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Dislocation structure of bulk aluminum nitride crystals grown by sublimation method, according to transmission electron microscopy
Creators: name: Ð§ÐµÑÑÐ¸ÐµÐ², Ð Ð°ÑÑÐ»
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2022
Subjects: Ð¾Ð±ÑÐµÐ¼Ð½ÑÐ¹ ÐºÑÐ¸ÑÑÐ°Ð»Ð»
Ð½Ð¸ÑÑÐ¸Ð´ Ð°Ð»ÑÐ¼Ð¸Ð½Ð¸Ñ
Ð´Ð¸ÑÐ»Ð¾ÐºÐ°ÑÐ¸Ð¸
Ð¿ÑÐ¾ÑÐ²ÐµÑÐ¸Ð²Ð°ÑÑÐ°Ñ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð°Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
bulk crystal
aluminum nitride
dislocations
transmission electron microscopy

description: ÐÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÑÑÑÐºÑÑÑÑ Ð¾Ð±ÑÐµÐ¼Ð½ÑÑ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð½Ð¸ÑÑÐ¸Ð´Ð° Ð°Ð»ÑÐ¼Ð¸Ð½Ð¸Ñ (AlN), Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÑÑÐ±Ð»Ð¸Ð¼Ð°ÑÐ¸Ð¸ Ð½Ð° ÐºÐ°ÑÐ±Ð¸Ð´Ð¾ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾Ð¹ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ. ÐÐ·ÑÑÐµÐ½Ð° Ð´Ð¸ÑÐ»Ð¾ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÑÑÑÐºÑÑÑÐ° ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð², Ð¾ÑÐ¾Ð±Ð¾Ðµ Ð²Ð½Ð¸Ð¼Ð°Ð½Ð¸Ðµ ÑÐ´ÐµÐ»ÐµÐ½Ð¾ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ°Ð¼ Ð´Ð¸ÑÐ»Ð¾ÐºÐ°ÑÐ¸Ð¹. ÐÑÐ¸Ð²ÐµÐ´ÐµÐ½ Ð»Ð¸ÑÐµÑÐ°ÑÑÑÐ½ÑÐ¹ Ð¾Ð±Ð·Ð¾Ñ, Ð² ÐºÐ¾ÑÐ¾ÑÐ¾Ð¼ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð° Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¾Ð±ÑÐµÐ¼Ð½ÑÑ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð½Ð¸ÑÑÐ¸Ð´Ð° Ð°Ð»ÑÐ¼Ð¸Ð½Ð¸Ñ Ð² ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¾ÑÑÐ°ÑÐ»ÑÑ Ð¼Ð¸ÐºÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸. ÐÐ½Ð°Ð»Ð¸Ð·Ð¸ÑÑÑÑÑÑ Ð´Ð°Ð½Ð½ÑÐµ Ð¿ÑÐ¾ÑÐ²ÐµÑÐ¸Ð²Ð°Ð²ÑÐµÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸ Ð¾ÑÐ½Ð¾ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ Ð´ÐµÑÐµÐºÑÐ½Ð¾Ð¹ ÑÑÑÑÐºÑÑÑÑ Ð¸ÑÑÐ»ÐµÐ´ÑÐµÐ¼ÑÑ Ð¾Ð±ÑÐµÐºÑÐ¾Ð². ÐÐ°Ð½Ð° Ð¾ÑÐµÐ½ÐºÐ° Ð¿Ð»Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð´ÐµÑÐµÐºÑÐ¾Ð² ÑÑÑÑÐºÑÑÑÑ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð°, Ð²ÑÑÐ²Ð»ÐµÐ½Ñ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ¸ Ð´Ð¸ÑÐ»Ð¾ÐºÐ°ÑÐ¸Ð¹. Ð­ÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÐµ Ð´Ð°Ð½Ð½ÑÐµ Ð±ÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¾Ð±Ð¾ÑÑÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¦ÐµÐ½ÑÑÐ° ÐºÐ¾Ð»Ð»ÐµÐºÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ Ð¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ñ (Ð¦ÐÐ) Â«ÐÐ°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ Ð¸ Ð´Ð¸Ð°Ð³Ð½Ð¾ÑÑÐ¸ÐºÐ° Ð² Ð¿ÐµÑÐµÐ´Ð¾Ð²ÑÑ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÑÂ», ÑÑÐ½ÐºÑÐ¸Ð¾Ð½Ð¸ÑÑÑÑÐ¸Ð¹ Ð½Ð° Ð±Ð°Ð·Ðµ Ð¤Ð¢Ð Ð¸Ð¼. Ð.Ð¤. ÐÐ¾ÑÑÐµ. Ð¡ÑÑÑÐºÑÑÑÐ½Ð¾Ðµ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ðµ Ð¸Ð·ÑÑÐ°Ð»Ð¾ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð¿ÑÐ¾ÑÐ²ÐµÑÐ¸Ð²Ð°ÑÑÐµÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð³Ð¾ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð° PHILIPS EM420 Ñ ÑÑÐºÐ¾ÑÑÑÑÐ¸Ð¼ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸ÐµÐ¼ 100 ÐºÐ. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¾ÑÑ Ð² ÑÑÐµÑ ÑÐµÐ¶Ð¸Ð¼Ð°Ñ: Ð² ÑÐµÐ¶Ð¸Ð¼Ð°Ñ Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð³Ð¾ ÐºÐ¾Ð½ÑÑÐ°ÑÑÐ° (ÑÐµÐ¼Ð½Ð¾Ðµ Ð¸ ÑÐ²ÐµÑÐ»Ð¾Ðµ Ð¿Ð¾Ð»Ðµ) Ð¸ Ð¼Ð¸ÐºÑÐ¾Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ð¸.
description: The final qualifying work is devoted to the study of the structure of aluminum nitride (AlN) crystals grown by sublimation on a silicon carbide substrate. The dislocation structure of crystals has been studied, and special attention has been paid to the sources of dislocations. A literature review is given, which considers the prospects of using bulk aluminum nitride crystals in various industries of microelectronics. The transmission electron microscopy data on the defect structure of research object is analyzed. The estimation of defects in crystal structures is given, the sources of dislocations are revealed. Experimental data were obtained using the equipment of the Center for Collective Use (CUC) "Materials Science and Diagnostics in Advanced Technologies", which operates on the basis of the FTI A.F. Ioffe. The structural stateÂ  studied by method of transmission electron microscopy using a PHILIPS EM420 microscope with a accelerating voltage of 100 kV. The study was carried out in three modes: in the modes of diffraction contrast (dark and bright field) and microdiffraction.