Evaluation of HPK $n^+$-$p$ planar pixel sensors for the CMS Phase-2 upgrade
Creators: name: Adam, W.
name: Bergauer, T.
name: Damanakis, K.
name: Dragicevic, M.
name: Frühwirth, R.
name: Steininger, H.
name: Beaumont, W.
name: Darwish, M. R.
name: Janssen, T.
name: Kello, T.
name: Sfar, H. Rejeb
name: Van Mechelen, P.
name: Breugelmans, N.
name: Delcourt, M.
name: De Moor, A.
name: D'Hondt, J.
name: Heyen, F.
name: Lowette, S.
name: Makarenko, I.
name: Muller, D.
name: Sahasransu, A. R.
name: Vannerom, D.
name: Van Putte, S.
name: Allard, Y.
name: Clerbaux, B.
name: Dansana, S.
name: De Lentdecker, G.
name: Evard, H.
name: Favart, L.
name: Hohov, D.
name: Khalilzadeh, A.
name: Lee, K.
name: Mahdavikhorrami, M.
name: Malara, A.
name: Paredes, S.
name: Postiau, N.
name: Robert, F.
name: Thomas, L.
name: Bemden, M. Vanden
name: Vanlaer, P.
name: Yang, Y.
name: Benecke, A.
name: Bruno, G.
name: Bury, F.
name: Caputo, C.
name: De Favereau, J.
name: Delaere, C.
name: Donertas, I. S.
name: Giammanco, A.
name: Jaffel, K.
name: Jain, S.
name: Lemaitre, V.
name: Mondal, K.
name: Szilasi, N.
name: Tran, T. T.
name: Wertz, S.
name: Brigljević, V.
name: Chitroda, B.
name: Ferenček, D.
name: Mishra, S.
name: Starodumov, A.
name: Šuša, T.
name: Brücken, E.
name: Lampén, T.
name: Martikainen, L.
name: Tuominen, E.
name: Karadzhinova-Ferrer, A.
name: Luukka, P.
name: Petrow, H.
name: Tuuva, T.
name: Agram, J.-L.
name: Andrea, J.
name: Apparu, D.
name: Bloch, D.
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name: Brom, J.-M.
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name: Charles, L.
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name: Noorudhin, S.
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name: Hill, C. S.
name: Joyce, M.
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name: Winer, B.
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name: Malik, S.
name: Chawla, R.
name: Das, S.
name: Jones, M.
name: Jung, A.
name: Koshy, A.
name: Liu, M.
name: Negro, G.
name: Schulte, J. F.
name: Thieman, J.
name: Dolen, J.
name: Parashar, N.
name: Pathak, A.
name: Ecklund, K. M.
name: Freed, S.
name: Kumar, A.
name: Nussbaum, T.
name: Demina, R.
name: Dulemba, J.
name: Hindrichs, O.
name: Gershtein, Y.
name: Halkiadakis, E.
name: Hart, A.
name: Kurup, C.
name: Lath, A.
name: Nash, K.
name: Osherson, M.
name: Schnetzer, S.
name: Stone, R.
name: Ally, D.
name: Fiorendi, S.
name: Harris, J.
name: Holmes, T.
name: Lee, L.
name: Nibigira, E.
name: Spanier, S.
name: Eusebi, R.
name: D'Angelo, P.
name: Johns, W.
name: CMS Collaboration
Publisher: name: Deutsches Elektronen-Synchrotron, DESY, Hamburg
Year: 2023
Subjects: subject: 530
subject: activity report
subject: semiconductor detector: pixel
subject: semiconductor detector: design
subject: pixel: size
subject: radiation: damage
subject: CMS
subject: p: irradiation
subject: n: irradiation
subject: tracking detector: upgrade
subject: efficiency
subject: performance
subject: electronics: readout
subject: integrated circuit
subject: Pixel
subject: Silicon
subject: Sensors
subject: HL-LHC
subject: Radiation hardness

description: To cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), scheduled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determined by the long operation time of 10 years with an instantaneous peak luminosity of up to 7.5 x 10$^{34}$ cm$^{-2}$s$^{-1}$ in the ultimate performance scenario. Depending on the radial distance from the interaction point, the silicon sensors will receive a particle fluence corresponding to a non-ionizing energy loss of up to $\Phi_{eq}$ = 3.5 x 10$^{16}$ cm$^{-2}$. This paper focuses on planar pixel sensor design and qualification up to a fluence of $\Phi_{eq}$ = 1.4 x 10$^{16}$ cm$^{-2}$ For the development of appropriate planar pixel sensors an R&amp;D program was initiated, which includes n$^+$-p sensors on 150 mm (6'') wafers with an active thickness of 150 $\mu$m with pixel sizes of 100 x 25 $\mu$m$^2$ and 50 x 50 $\mu$m$^2$ manufactured by Hamamatsu. Single chip modules with ROC4Sens and RD53A readout chips were made. Irradiation with protons and neutrons, as well was an extensive test beam campaign at DESY were carried out. This paper presents the investigation of various assemblies mainly with ROC4Sens readout chips. It demonstrates that multiple designs fulfill the requirements in terms of breakdown voltage, leakage current and efficiency. The single point resolution for 50 x 50 $\mu$m$^2$ pixels is measured as 4.0 $\mu$m for non-irradiated samples, and 6.3 $\mu$ fter irradiation to $\Phi_{eq}$ = 7.2 x 10$^{15}$ cm$^{-2}$.