title: Ð¤Ð¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÑ Ð² Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÐµ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ p-GaAs/AlGaAs
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Photoconductivity in heterostructure with p-GaAs/AlGaAs quantum wells
Creators: name: Ð¥Ð°ÑÐ¸Ð½, ÐÐ¸ÐºÐ¸ÑÐ°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÐ°
ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÑ
Ð°ÐºÑÐµÐ¿ÑÐ¾ÑÑ
ÐºÐ²Ð°Ð½ÑÐ¾Ð²Ð°Ñ ÑÐ¼Ð°
ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ðµ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ðµ
heterostructure
photoconductivity
acceptor
quantum well
terahertz radiation

description: Ð¦ÐµÐ»ÑÑ Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐµÑÑÑ Ð¸Ð·ÑÑÐµÐ½Ð¸Ðµ Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ÑÑÐ¸ Ð½Ð°Ð±Ð»ÑÐ´ÐµÐ½Ð¸Ñ ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸, ÑÐ²ÑÐ·Ð°Ð½Ð½Ð¾Ð¹ Ñ Ð°ÐºÑÐµÐ¿ÑÐ¾ÑÐ½ÑÐ¼Ð¸ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸ÑÐ¼Ð¸ Ð² ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼Ð°Ñ GaAs/AlGaAs. 
Ð Ð·Ð°Ð´Ð°ÑÐ¸ ÑÐ°Ð±Ð¾ÑÑ Ð²ÑÐ¾Ð´Ð¸Ñ
1. Ð¡Ð¾Ð·Ð´Ð°Ð½Ð¸Ðµ ÑÐ¸ÑÑÐµÐ¼Ñ Ð´Ð»Ñ ÑÐºÑÐ°Ð½Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ð²Ð½ÐµÑÐ½ÐµÐ³Ð¾ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ.
2. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð¾Ð»ÑÑ-Ð°Ð¼Ð¿ÐµÑÐ½ÑÑ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº.
3. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ¿ÐµÐºÑÑÐ¾Ð² ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ Ð´Ð»Ñ ÑÐ²ÐµÑÐ°, Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð² Ð¿Ð»Ð¾ÑÐºÐ¾ÑÑÐ¸ ÐÐ¯ Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½Ð¾Ð¹ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐµ.
ÐÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¸ÑÑ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ñ ÑÐ¿ÐµÐºÑÑÐ¾Ð² ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸, Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð»Ð°ÑÑ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¾ÑÑÐ¸ Ð¾Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð´Ð»Ñ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ ÑÐ½ÐµÑÐ³Ð¸Ð¸ ÑÐ²ÑÐ·Ð¸ Ð°ÐºÑÐµÐ¿ÑÐ¾ÑÐ½Ð¾Ð¹ Ð¿ÑÐ¸Ð¼ÐµÑÐ¸, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÐ½Ð¸Ð¼Ð°Ð»Ð¸ÑÑ Ð²Ð¾Ð»ÑÑ-Ð°Ð¼Ð¿ÐµÑÐ½ÑÐµ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ Ð¾Ð±ÑÐ°Ð·ÑÐ° Ð¿ÑÐ¸ ÑÐ°Ð·Ð½ÑÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ Ð´Ð»Ñ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð¿Ð¾Ð»Ñ Ð¿ÑÐ¾Ð±Ð¾Ñ. 
Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð±ÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÑÐ¿ÐµÐºÑÑÑ ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ Ð² Ð±Ð»Ð¸Ð¶Ð½ÐµÐ¼, ÑÑÐµÐ´Ð½ÐµÐ¼ Ð¸ Ð´Ð°Ð»ÑÐ½ÐµÐ¼ Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½Ð¾Ð¼ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ. ÐÑÐ»Ð¸ Ð¿ÑÐ¾Ð°Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ñ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼Ñ Ð¿ÑÐ¸Ð¼ÐµÑÐ½Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ Ð¸ Ð¾ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸Ð·Ð¾Ð²Ð°Ð½Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½ÑÐµ Ð¿Ð¸ÐºÐ¸. ÐÐ° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¾ÑÐ¾Ð±ÐµÐ½Ð½Ð¾ÑÑÐµÐ¹ Ð¼Ð¾Ð¶Ð½Ð¾ ÑÐ´ÐµÐ»Ð°ÑÑ Ð²ÑÐ²Ð¾Ð´, ÑÑÐ¾ ÑÑÑÑÐºÑÑÑÑ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ GaAs/AlGaAs, Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐµ Ð°ÐºÑÐµÐ¿ÑÐ¾ÑÐ¾Ð¼, Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½Ñ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð´Ð»Ð¸Ð½Ð½Ð¾Ð²Ð¾Ð»Ð½Ð¾Ð²ÑÑ Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½ÑÑ ÑÐ¾ÑÐ¾Ð¿ÑÐ¸ÐµÐ¼Ð½Ð¸ÐºÐ¾Ð² Ð¸ Ð¼Ð¾Ð´ÑÐ»ÑÑÐ¾ÑÐ¾Ð².
description: The given work is devoted to studying the possibility of observing photoconductivity associated with acceptor states in GaAs/AlGaAs quantum wells.
1. Creating a system for shielding external radiation.
2. Studying of current-voltage characteristics.
3. Investigation of the photoconductivity spectra for light polarized in the QW plane at different temperatures.
The photoconductivity spectra were measured, the temperature dependence of the conductivity was studied to determine the binding energy of the acceptor impurity. Measurements of current-voltage characteristics of the sample were taken at different temperatures to determine the breakdown field.
As a result, photoconductivity spectra were obtained in the near, middle, and far infrared ranges. The mechanisms of impurity photoconductivity were analyzed and the spectral peaks obtained were characterized. Based on the obtained features, it can be concluded that structures with GaAs/AlGaAs quantum wells doped with an acceptor are promising for creating long-wave infrared photodetectors and modulators.