title: ÐÐ·ÑÑÐµÐ½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐ¾Ð´ÐµÑÐ¶Ð°Ð½Ð¸Ñ Sb Ð½Ð° Ð¿ÑÐµÑÐ¸Ð¿Ð¸ÑÐ°ÑÐ¸Ñ As-Sb Ð² LTG-AlGaAsSb
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Study of the influence of the Sb content on the precipitation of As-Sb in LTG-AlGaAsSb
Creators: name: ÐÐ»Ð°Ð´ÑÐºÐ¸Ñ, ÐÐ½ÑÐ¾Ð½
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¿ÑÐ¾ÑÐ²ÐµÑÐ¸Ð²Ð°ÑÑÐ¸Ð¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¹ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿
Ð½Ð¸Ð·ÐºÐ¾ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÐ¹ Ð°ÑÑÐµÐ½Ð¸Ð´ Ð³Ð°Ð»Ð»Ð¸Ñ
Ð½Ð°Ð½Ð¾Ð²ÐºÐ»ÑÑÐµÐ½Ð¸Ñ As-Sb
transmitting electronic microscope
low-temperature gallium arsenide
As-Sb nanoinclusions

description: Ð Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÐµ Ð±ÑÐ»Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð½Ð°Ð½Ð¾Ð²ÐºÐ»ÑÑÐµÐ½Ð¸Ñ Ð² ÑÐµÑÐ¸Ð¸ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² LTG-GaAs Ð¸ LTG-AlGaAs Ñ ÑÐ¾Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸ÐµÐ¼ As Ð¸ Sb. Ð¡ÑÑÑÐºÑÑÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð¿ÑÐ¾ÑÐ²ÐµÑÐ¸Ð²Ð°ÑÑÐµÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸ (ÐÐ­Ð) Ð² Ð¿Ð¾Ð¿ÐµÑÐµÑÐ½Ð¾Ð¼ ÑÐµÑÐµÐ½Ð¸Ð¸ Ð¾Ð±ÑÐ°Ð·ÑÐ°. ÐÑÐ»Ð¸ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ñ ÑÐ°ÐºÐ¸Ðµ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÑ, ÐºÐ°Ðº ÑÐ°Ð·Ð¼ÐµÑ, Ð¿Ð»Ð¾ÑÐ½Ð¾ÑÑÑ ÑÐ°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð¼Ð°ÑÑÐ¸Ð²Ð° Ð²ÑÐ´ÐµÐ»ÐµÐ½Ð¸Ð¹ Ð² ÑÐ»Ð¾Ðµ, Ð¸Ñ Ð¾Ð±ÑÐµÐ¼Ð½Ð°Ñ Ð´Ð¾Ð»Ñ, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÐ¾ÑÑÐ°Ð² Ð½Ð°Ð½Ð¾Ð²ÐºÐ»ÑÑÐµÐ½Ð¸Ð¹ As-Sb. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð½ÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ð¹ Ð±ÑÐ»Ð¾ ÑÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¾, ÑÑÐ¾ Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ ÑÑÑÑÐ¼Ð¾Ð¹ Ð¿ÑÐ¸Ð²Ð¾Ð´Ð¸Ñ Ðº ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ñ ÑÐ°Ð·Ð¼ÐµÑÐ¾Ð² Ð½Ð°Ð½Ð¾Ð²ÐºÐ»ÑÑÐµÐ½Ð¸Ð¹, ÑÑÐ¾ Ð²ÑÐ·Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸ÐµÐ¼ Ð¸Ð·Ð¾Ð²Ð°Ð»ÐµÐ½ÑÐ½Ð¾Ð³Ð¾ Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÑÑÑÐ¼Ð¾Ð¹ Ð½Ð° Ð·Ð°ÑÐ²Ð°Ñ Ð¼ÑÑÑÑÐºÐ° Ð¿ÑÐ¸ ÑÐ¾ÑÑÐµ, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¿Ð¾ÑÐ²Ð»ÐµÐ½Ð¸Ðµ Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ð¹ Ð² Ð¿Ð»ÐµÐ½ÐºÐµ Ð¸Ð·-Ð·Ð° ÑÐ°ÑÑÐ¾Ð³Ð»Ð°ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÐµÑÐµÑÐ¾Ðº GaAs Ð¸ Sb. ÐÐ»Ð¸ÑÐ½Ð¸Ðµ Al ÑÐ°ÐºÐ¶Ðµ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸Ð·ÑÐµÑÑÑ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸ÐµÐ¼ ÑÐ°Ð·Ð¼ÐµÑÐ¾Ð² Ð½Ð°Ð½Ð¾Ð²ÐºÐ»ÑÑÐµÐ½Ð¸Ð¹, Ð¾Ð´Ð½Ð°ÐºÐ¾ ÑÑÐ¾ ÑÐ²ÑÐ·Ð°Ð½Ð¾ Ñ Ð´Ð¸ÑÑÑÐ·Ð¸Ð¾Ð½Ð½ÑÐ¼Ð¸ Ð¿ÑÐ¾ÑÐµÑÑÐ°Ð¼Ð¸ Ð¿ÑÐ¸ Ð¿ÑÐµÑÐ¸Ð¿Ð¸ÑÐ°ÑÐ¸Ð¸. Ð¢Ð°ÐºÐ¶Ðµ Ð±ÑÐ»Ð¸ Ð¿ÑÐ¾Ð°Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ñ ÑÐ¿ÐµÐºÑÑÑ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð¹ ÑÐºÑÑÐ¸Ð½ÐºÑÐ¸Ð¸, Ð³Ð´Ðµ Ð°Ð½Ð°Ð»Ð¸ÑÐ¸ÑÐµÑÐºÐ¸ Ð¾Ð±Ð½Ð°ÑÑÐ¶ÐµÐ½ ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ½ÑÐ¹ Ð¿Ð¸Ðº Ñ ÑÐ½ÐµÑÐ³Ð¸ÐµÐ¹ 2,4 ÑÐ. ÐÑÐ¸ÑÐ¾Ð´Ð° ÑÐ´Ð²Ð¸Ð³Ð° Ð¿Ð¸ÐºÐ° ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ½Ð¾Ð³Ð¾ Ð¿Ð¾Ð³Ð»Ð¾ÑÐµÐ½Ð¸Ñ Ð½Ðµ ÑÑÐ½Ð°. ÐÐ±ÑÑÑÐ½ÐµÐ½Ð¸Ðµ ÑÑÐ¾Ð³Ð¾ ÑÐ²Ð»ÐµÐ½Ð¸Ñ, Ð° ÑÐ°ÐºÐ¶Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð½Ð°Ð½Ð¾Ð²ÐºÐ»ÑÑÐµÐ½Ð¸Ð¹ As-Sb Ð½Ð° Ð¿ÑÐ¾ÑÐ²Ð»ÐµÐ½Ð¸Ðµ ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ° ÑÐ²Ð»ÑÐµÑÑÑ Ð°ÐºÑÑÐ°Ð»ÑÐ½Ð¾Ð¹ Ð·Ð°Ð´Ð°ÑÐµÐ¹ Ð´Ð»Ñ Ð±ÑÐ´ÑÑÐ¸Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ð¹.
description: In this paper, was studied nanoinclusions in a series of LTG-GaAs and LTGAlGaAs samples with co-precipitation of As and Sb. The structures were studied by transmission electron microscopy (TEM) in the cross-section of the sample. We determined such parameters as the size, density of distribution of the array of precipitates in the layer, their volume fraction, as well as the composition of As-Sb nanoinclusions. As a result of the studies carried out, it was found that doping with antimony leads to an increase in the size of nanoinclusions, which is caused by the effect of isovalent doping with antimony on the capture of arsenic during growth, as well as by the appearance of stresses in the film due to the lattice mismatch between GaAs and Sb. The effect of Al is also characterized by an increase in the size of nanoinclusions; however, it is associated with diffusion processes during precipitation. Was also analyzed the optical extinction spectra, where a resonance peak with an energy of 2.4 eV was analytically detected. The nature of the shift of the resonance absorption peak is not clear; the explanation of this phenomenon, as well as the influence of As-Sb nanoinclusions on the manifestation of resonance, is an urgent task for future studies.