title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÑ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐµÐ¹ Ð¿Ð¾ÑÐ¾Ð³Ð¾Ð²ÑÑ Ð¸ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½ÑÑ Ñ Ð°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð»Ð°Ð·ÐµÑÐ¾Ð² Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ Ð´Ð»Ð¸Ð½ Ð²Ð¾Ð»Ð½ 900-1100 Ð½Ð¼
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Study of temperature dependences of threshold and spectral characteristics of semiconductor lasers 900-1100 nm
Creators: name: Ð Ð¸Ð·Ð°ÐµÐ², ÐÑÑÐµÐ¼
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: ÐÐµÐ½ÐµÑÐ°ÑÐ¾ÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ
ÐÐ¾Ð»Ð½Ð¾Ð²Ð¾Ð´Ñ
ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð°Ñ ÑÑÐ°Ð±Ð¸Ð»ÑÐ½Ð¾ÑÑÑ
ÑÐ°ÐºÑÐ¾Ñ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐµÐ½Ð¸Ñ
temperature stability
optical confinement factor

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð¹ ÑÑÐ°Ð±Ð¸Ð»ÑÐ½Ð¾ÑÑÐ¸ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²ÑÑ Ð»Ð°Ð·ÐµÑÐ¾Ð². Ð ÑÐ°Ð±Ð¾ÑÐµ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÑÐµÑÑÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð°Ñ ÑÑÐ°Ð±Ð¸Ð»ÑÐ½Ð¾ÑÑÑ Ð¿Ð¾ÑÐ¾Ð³Ð¾Ð²Ð¾Ð¹ Ð¿Ð»Ð¾ÑÐ½Ð¾ÑÑÐ¸ ÑÐ¾ÐºÐ° Ð² Ð¸Ð¼Ð¿ÑÐ»ÑÑÐ½Ð¾Ð¼ ÑÐµÐ¶Ð¸Ð¼Ðµ Ð² Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¾Ñ Ð´Ð¸Ð·Ð°Ð¹Ð½Ð° Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÑ: ÐºÐ¾Ð»Ð¸ÑÐµÑÑÐ²Ð° ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼, ÑÐ¸ÑÐ¸Ð½Ñ Ð²Ð¾Ð»Ð½Ð¾Ð²Ð¾Ð´Ð° Ð¸ ÑÐ°ÐºÑÐ¾ÑÐ° Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐµÐ½Ð¸Ñ. ÐÑÐ¾Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¾, ÑÑÐ¾ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ðµ Ð-ÑÐ°ÐºÑÐ¾ÑÐ° Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐµÐ½Ð¸Ñ ÑÐ¼ÐµÐ½ÑÑÐ°ÐµÑ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ñ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÐµÐ¹ Ð·Ð°ÑÑÐ´Ð° Ð² Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÐ¸ Ð»Ð°Ð·ÐµÑÐ° Ð¸ Ð¿Ð¾Ð²ÑÑÐ°ÐµÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÑ ÑÑÐ°Ð±Ð¸Ð»ÑÐ½Ð¾ÑÑÑ Ð¿Ð¾ÑÐ¾Ð³Ð¾Ð²Ð¾Ð³Ð¾ ÑÐ¾ÐºÐ°. Ð¢Ð°ÐºÐ¶Ðµ Ð² ÑÐ°Ð±Ð¾ÑÐµ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÑÐµÑÑÑ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð³Ð¾ ÑÐ¼ÐµÑÐµÐ½Ð¸Ñ ÑÐ¿ÐµÐºÑÑÐ° Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ð¸ Ð»Ð°Ð·ÐµÑÐ¾Ð² Ð² Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¾Ñ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð¾ÑÐµÑÑ Ð½Ð° Ð²ÑÑÐ¾Ð´ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ° (Ð´Ð»Ð¸Ð½Ñ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ°). Ð£ÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¾, ÑÑÐ¾ Ð² ÑÑÑÑÐºÑÑÑÐ°Ñ Ñ Ð½Ð¸Ð·ÐºÐ¸Ð¼ ÑÐ°ÐºÑÐ¾ÑÐ¾Ð¼ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐµÐ½Ð¸Ñ Ð·Ð° ÑÑÐµÑ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ñ Ð¿Ð¾ÑÐµÑÑ Ð½Ð° Ð²ÑÑÐ¾Ð´ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ð¼Ð¾Ð¶Ð½Ð¾ ÑÐ¼ÐµÐ½ÑÑÐ¸ÑÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÐ¹ ÑÐ´Ð²Ð¸Ð³ Ð² Ð´Ð»Ð¸Ð½Ð½Ð¾Ð²Ð¾Ð»Ð½Ð¾Ð²ÑÑ Ð¾Ð±Ð»Ð°ÑÑÑ. Ð ÑÑÑÑÐºÑÑÑÐ°Ñ Ñ Ð²ÑÑÐ¾ÐºÐ¸Ð¼ ÑÐ°ÐºÑÐ¾ÑÐ¾Ð¼ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¾Ð³ÑÐ°Ð½Ð¸ÑÐµÐ½Ð¸Ñ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð³Ð¾ ÑÐ¼ÐµÑÐµÐ½Ð¸Ñ ÑÐ¿ÐµÐºÑÑÐ° ÑÑÐ°Ð±Ð¸Ð»ÐµÐ½ Ð¸ ÑÐ»Ð°Ð±Ð¾ Ð¼ÐµÐ½ÑÐµÑÑÑ Ð² Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¾Ñ Ð´Ð»Ð¸Ð½Ñ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð³Ð¾ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ°. Ð ÑÐ°Ð±Ð¾ÑÐµ Ð¿ÑÐ¾Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¾, ÑÑÐ¾ Ð² ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ñ, ÑÐ²ÑÐ·Ð°Ð½Ð½ÑÑ Ñ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸ÐµÐ¼ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð¸ ÐµÑ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð¿Ð¾ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð¾Ð¼Ñ ÑÐ´Ð²Ð¸Ð³Ñ Ð½ÐµÐ¾Ð±ÑÐ¾Ð´Ð¸Ð¼Ð¾ ÑÑÐ¸ÑÑÐ²Ð°ÑÑ ÐºÐ°Ðº Ð´Ð¸Ð·Ð°Ð¹Ð½ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÑ, ÑÐ°Ðº Ð¸ ÐºÐ¾Ð½ÑÑÑÑÐºÑÐ¸Ñ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð³Ð¾ ÑÐ¸Ð¿Ð°.
description: The subject of the graduate qualification work is temperature stability of semiconductor lasers. In this work, the temperature stability of the threshold current density in the pulsed mode is experimentally determined depending on the design of the heterostructure: the number of quantum wells, the waveguide width, and the optical confinement factor. It has been demonstrated that an increase in the G-factor of the optical confinement reduces the concentration of charge carriers in the active region of the laser and increases the temperature stability of the threshold current. Also in the work, the coefficient of the temperature shift of the laser generation spectrum is experimentally determined depending on the optical losses at the mirrors (resonator length). It has been established that in structures with a low optical confinement factor, the temperature shift to the long-wavelength region can be reduced by increasing the mirrors losses. In structures with a high optical confinement factor, the coefficient of temperature shift of the spectrum is stable and varies slightly depending on the length of the laser cavity. The paper demonstrates that in experiments related to temperature change and its determination from the spectrum shift, it is necessary to take into account both the design of the heterostructure and the design of the laser chip.