cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Pilot Production of 6''-Heterojunction Cells and Modules at Meyer-Burger and Outdoor Performance
Creators: name: Zhao, J.
name: Mehlich, H.
name: Hausmann, J.
name: Richter, M.
name: Gruber, B.
name: Weinke, M.
name: Schorch, M.
name: Kowalewski, J.
name: Krause, J.
name: Papet, P.
name: Stein, W.
name: Blanchet, M.
name: Söderström, T.
name: Richter, A.
name: Beyer, S.
name: Ufheil, J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1887-1889
description: In the Meyer-Burger labs, pilot production of its proprietary 6''-Heterojunction (HJT) cells has been
conducted on full-scale production tools (Roth & Rau Helia PECVD & Helia PVD). Overall, close to 10.000 cells have
been manufactured with efficiencies up to 21,1%. From theses HJT cells, 60-cell modules have been produced.
Temperature coefficient measurements of both cells and modules have been conducted by independent institutes,
resulting in outstanding -0,20%/K and -0,22%/K, respectively. The modules have been deployed on an outdoor test field
in Mid-European climate conditions for over 1 year. The results demonstrate the durability of the HJT modules and
comparison with standard crystalline modules show an increase of energy yield of up to 7% on sunny days already in
spring time. Under hot climate conditions in southern regions this increase is supposed to be even higher, making HJT
modules extremely suitable for southern climates and low LCOE´s.
TCO Improvements in a-Si:H/c-Si Heterojunction Solar Cell
Creators: name: Izzi, M.
name: Tucci, M.
name: Serenelli, L.
name: Mangiapane, P.
name: Della Noce, M.
name: Mazzarella, L.
name: Usatii, I.
name: Mercaldo, L.V.
name: Esposito, E.M.
name: Bobeico, E.
name: Delli Veneri, P.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1877-1881
description: The way to reach the grid parity for PV passes through the high efficiency solar cell technology. The
amorphous/crystalline heterojunction promises the goal, considering the world record efficiency targeted by Panasonic.
Transparent conducting oxides (TCOs) play an essential role in modern optoelectronic devices through their combination
of electrical conductivity and optical transparency. TCO, plays a key role to enhance the HJ cell efficiency. We have
studied and characterized the properties of a new trilayer AZO/Ag/AZO as TCO in the c-Si heterojunction solar cell,
whose thickness and composition combination ensure also an antireflection coating role. The influence of Ag layer
thickness on electrical and optical properties of the tri-layer film was investigated. Several analytical tools such as fourpoint
probe, scanning electron microscopy (SEM) and ultraviolet–visible–near infrared (UV–vis–NIR) spectrophotometer
were used to explore the causes of the changes in optoelectronic properties and surface micrographs. The highest value
is 2.5×10−4Ω cm for the AZO (100nm) /Ag (8nm) /AZO( 50nm) tri-layer film, and the sheet resistance is 15.5 Ω/sq,
while the average transmittance is above 78% in the visible light region (400–800 nm).
Nonequilibrium thermodynamics in the strong coupling and non-Markovian regime based on a reaction coordinate mapping
Creators: name: Strasberg, Philipp
name: Schaller, Gernot
name: Lambert, Neill
name: Brandes, Tobias
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Statistical Mechanics (cond-mat.stat-mech)
subject: FOS: Physical sciences

description: We propose a method to study the thermodynamic behaviour of small systems beyond the weak coupling and Markovian approximation, which is different in spirit from conventional approaches. The idea is to redefine the system and environment such that the effective, redefined system is again coupled weakly to Markovian residual baths and thus, allows to derive a consistent thermodynamic framework for this new system-environment partition. To achieve this goal we make use of the reaction coordinate mapping, which is a general method in the sense that it can be applied to an arbitrary (quantum or classical and even time-dependent) system coupled linearly to an arbitrary number of harmonic oscillator reservoirs. The core of the method relies on an appropriate identification of a part of the environment (the reaction coordinate), which is subsequently included as a part of the system. We demonstrate the power of this concept by showing that non-Markovian effects can significantly enhance the steady state efficiency of a three-level-maser heat engine, even in the regime of weak system-bath coupling. Furthermore, we show for a single electron transistor coupled to vibrations that our method allows one to justify master equations derived in a polaron transformed reference frame.
description: updated and improved version; 19 pages incl. 10 figures and 5 pages appendix
Stealing PINs via Mobile Sensors: Actual Risk versus User Perception
Creators: name: Mehrnezhad, Maryam
name: Toreini, Ehsan
name: Shahandashti, Siamak F.
name: Hao, Feng
Publisher: name: arXiv
Year: 2016
Subjects: subject: Cryptography and Security (cs.CR)
subject: FOS: Computer and information sciences

description: In this paper, we present the actual risks of stealing user PINs by using mobile sensors versus the perceived risks by users. First, we propose PINlogger.js which is a JavaScript-based side channel attack revealing user PINs on an Android mobile phone. In this attack, once the user visits a website controlled by an attacker, the JavaScript code embedded in the web page starts listening to the motion and orientation sensor streams without needing any permission from the user. By analysing these streams, it infers the user's PIN using an artificial neural network. Based on a test set of fifty 4-digit PINs, PINlogger.js is able to correctly identify PINs in the first attempt with a success rate of 74% which increases to 86 and 94% in the second and third attempts, respectively. The high success rates of stealing user PINs on mobile devices via JavaScript indicate a serious threat to user security. With the technical understanding of the information leakage caused by mobile phone sensors, we then study users' perception of the risks associated with these sensors. We design user studies to measure the general familiarity with different sensors and their functionality, and to investigate how concerned users are about their PIN being discovered by an app that has access to all these sensors. Our studies show that there is significant disparity between the actual and perceived levels of threat with regard to the compromise of the user PIN. We confirm our results by interviewing our participants using two different approaches, within-subject and between-subject, and compare the results. We discuss how this observation, along with other factors, renders many academic and industry solutions ineffective in preventing such side channel attacks.
CoMaLit-V. Mass forecasting with proxies. Method and application to weak lensing calibrated samples
Creators: name: Sereno, Mauro
name: Ettori, Stefano
Publisher: name: arXiv
Year: 2016
Subjects: subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: FOS: Physical sciences

description: Mass measurements of astronomical objects are most wanted but still elusive. We need them to trace the formation and evolution of cosmic structure but we can get direct measurements only for a minority. This lack can be circumvented with a proxy and a scaling relation. The twofold goal of estimating the unbiased relation and finding the right proxy value to plug in can be hampered by systematics, selection effects, Eddington/Malmquist biases and time evolution. We present a Bayesian hierarchical method which deals with these issues. Masses to be predicted are treated as missing data in the regression and are estimated together with the scaling parameters. The calibration subsample with measured masses does not need to be representative of the full sample as far as it follows the same scaling relation. We apply the method to forecast weak lensing calibrated masses of the Planck, redMaPPer and MCXC clusters. Planck masses are biased low with respect to weak lensing calibrated masses, with a bias more pronounced for high redshift clusters. MCXC masses are under-estimated by ~20 per cent, which may be ascribed to hydrostatic bias. Packages and catalogs are made available with the paper.
description: 20 pages; 18 figures. MNRAS in press. v2: updated catalogues; extended discussion. CoMaLit products are hosted at http://pico.bo.astro.it/~sereno/CoMaLit/
Bootstrapping rapidity anomalous dimension for transverse-momentum resummation
Creators: name: Li, Ye
name: Zhu, Hua Xing
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: Soft function relevant for transverse-momentum resummation for Drell-Yan or Higgs production at hadron colliders are computed through to three loops in the expansion of strong coupling, with the help of bootstrap technique and supersymmetric decomposition. The corresponding rapidity anomalous dimension is extracted. An intriguing relation between anomalous dimensions for transverse-momentum resummation and threshold resummation is found.
description: v2: Appendices added; fix a misprint in Eq. (11); results and conclusion unchanged; v3: version accepted by PRL; v4: typos fixed
Quickest Sequence Phase Detection
Creators: name: Wang, Lele
name: Hu, Sihuang
name: Shayevitz, Ofer
Publisher: name: arXiv
Year: 2016
Subjects: subject: Information Theory (cs.IT)
subject: FOS: Computer and information sciences

description: A phase detection sequence is a length-$n$ cyclic sequence, such that the location of any length-$k$ contiguous subsequence can be determined from a noisy observation of that subsequence. In this paper, we derive bounds on the minimal possible $k$ in the limit of $n\to\infty$, and describe some sequence constructions. We further consider multiple phase detection sequences, where the location of any length-$k$ contiguous subsequence of each sequence can be determined simultaneously from a noisy mixture of those subsequences. We study the optimal trade-offs between the lengths of the sequences, and describe some sequence constructions. We compare these phase detection problems to their natural channel coding counterparts, and show a strict separation between the fundamental limits in the multiple sequence case. Both adversarial and probabilistic noise models are addressed.
description: To appear in the IEEE Transactions on Information Theory
Quantum theory of an electron waiting time clock
Creators: name: Dasenbrook, David
name: Flindt, Christian
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: The electron waiting time is the time that passes between two subsequent charge transfers in an electronic conductor. Recently, theories of electron waiting times have been devised for quantum transport in Coulomb-blockade structures and for mesoscopic conductors, however, so far a proper description of a detector has been missing. Here we develop a quantum theory of a waiting time clock capable of measuring the distribution of waiting times between electrons above the Fermi sea in a mesoscopic conductor. The detector consists of a mesoscopic capacitor coupled to a quantum two-level system whose coherent precession we monitor. Under ideal operating conditions our waiting time clock recovers the results of earlier theories without a detector. We investigate possible deviations due to an imperfect waiting time clock. As specific applications we consider a quantum point contact with a constant voltage and lorentzian voltage pulses applied to an electrode.
description: 12 pages, 6 figures
Effects of Intrinsic a-Si:H Layer on the Performance of Silicon Heterojunction Solar Cells
Creators: name: Chen, M.
name: Chang, Y.-L.
name: Yang, P.-C.
name: Chien, Y.-J.
name: Liu, J.S.Q
name: Chang, J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1846-1848
description: Silicon heterojunction (SHJ) solar cell have potential to achieve high efficiencies and intrinsic
hydrogenated amorphous silicon (i a-Si:H) with high surface passivation quality play an important role in the
performance of solar cell. We reported that SHJ solar cells were fabricated with different conditions of intrinsic
hydrogenated amorphous silicon. With decreasing i a-Si:H thicknesses, fill factor (FF) increases and the short-circuit
current density (Jsc) increases gradually, whereas the open-circuit voltage (Voc) reduces. The highest conversion
efficiency SHJ solar cell can be obtained while the thickness of i a-Si:H layer is appropriate. The results indicate that
the highest open-circuit voltage and fill factor when i a-Si:H layer is deposited at appropriate pressure. The
performance of SHJ solar cell gets worse with increasing power density. Hydrogen dilution ratio of i a-Si:H layer
deposition conditions of SHJ solar cells have influence on the open-circuit voltage and fill factor. Low hydrogen
dilution ratio leads to high open-circuit voltage. After optimization of process, SHJ solar cell on 6 inch wafers with a
conversion efficiency of 22.26 % was achieved.
Attractors for the strongly damped wave equation with $p$-Laplacian
Creators: name: Khanmamedov, Azer
name: Şen, Zehra
Publisher: name: arXiv
Year: 2016
Subjects: subject: Analysis of PDEs (math.AP)
subject: FOS: Mathematics
subject: 35L05, 35L30, 35B41

description: This paper is concerned with the initial boundary value problem for one dimensional strongly damped wave equation involving $p$-Laplacian. For $p>2$, we establish the existence of weak local attractors for this problem in $W_{0}^{1,p}(0,1)\times L^{2}(0,1)$. Under restriction $2
Efficient shapes for microswimming: from three-body swimmers to helical flagella
Creators: name: Bet, Bram
name: Boosten, Gijs
name: Dijkstra, Marjolein
name: van Roij, René
Publisher: name: arXiv
Year: 2016
Subjects: subject: Soft Condensed Matter (cond-mat.soft)
subject: FOS: Physical sciences

description: We combine a general formulation of microswimmmer equations of motion with a numerical bead-shell model to calculate the hydrodynamic interactions with the fluid, from which the swimming speed, power and efficiency are extracted. From this framework, a generalized Scallop Theorem emerges. The applicability to arbitrary shapes allows for the optimization of the efficiency with respect to the swimmer geometry. We apply this scheme to `three-body swimmers' of various shapes and find that the efficiency is characterized by the single body friction coefficient in the long-arm regime, while in the short-arm regime the minimal approachable distance becomes the determining factor. Next, we apply this scheme to a biologically inspired swimmer that propels itself using a rotating helical flagellum. Interestingly, we find two distinct optimal shapes, one of which is fundamentally different from the shapes observed in nature (e.g. bacteria).
description: 9 pages, 5 figures
Post-Treatment of Room-Temperature-Sputtered Indium-Tin-Oxide for High-Efficiency Silicon Heterojunction Solar Cells
Creators: name: Albadri, A.
name: Saenger, K.L.
name: Hekmatshoar, B.
name: Sadana, D.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1825-1827
description: Indium-tin-oxide (ITO) films of 80 nm were deposited on a-Si:H/c-Si structures by r.f. sputtering at
room temperature. The underlying thin a-Si:H film was first deposited by a PECVD at 200 °C. The reliability of the
a-Si:H passivaiton was examined by measuring the lifetime after short time (3 sec) high temperature annealing. Post
flash annealing for the ITO/a-Si:H/c-Si structure was performed to enhance the ITO properties without compromising
the quality of a-Si:H as a result of hydrogen loss from a-Si:H or a-Si:H/c-Si interface. The flash annealing is shown to
improve the ITO films due to thermally induced crystallization. This was investigated by obtaining the XRD data
where a peak at 30.6 ˚ was observed. This improvement of the ITO conductivity is in correlation with a lower sheet
resistance and a higher fill factor (FF).
General Monogamy of Tsallis $q$-Entropy Entanglement in Multiqubit Systems
Creators: name: Luo, Yu
name: Tian, Tian
name: Shao, Lian-He
name: Li, Yongming
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: In this paper, we study the monogamy inequality of Tsallis-q entropy entanglement. We first provide an analytic formula of Tsallis-q entropy entanglement in two-qubit systems for $\frac{5-\sqrt{13}}{2}\leq q\leq\frac{5+\sqrt{13}}{2}.$ The analytic formula of Tsallis-q entropy entanglement in $2\otimes d$ system is also obtained and we show that Tsallis-q entropy entanglement satisfies a set of hierarchical monogamy equalities. Furthermore, we prove the squared Tsallis-q entropy entanglement follows a general inequality in the qubit systems. Based on the monogamy relations, a set of multipartite entanglement indicators is constructed, which can detect all genuine multiqubit entangled states even in the case of $N$-tangle vanishes. Moreover, we study some examples in multipartite higher-dimensional system for the monogamy inequalities.
description: 9 pages, 12 figures. v3: closed to published version
Features of Solar Cells and Solar Silicon Wafers Surface Photovoltage Spectral Dependences in the Short-Wave Absorption Region
Creators: name: Kostylyov, V.P.
name: Lytovchenko, V.G.
name: Sachenko, A.V.
name: Slusar, T.V.
name: Chernenko, V.V.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1715-1718
description: The features of surface photovoltage spectral dependences of silicon in the short-wave absorption
region have been studied. They are associated with the existence of the surface photovoltage short-wave recession
region in silicon solar cells and wafers. Two theoretical mechanisms were analyzed. According to them such
recession is explained by the limitation of the effective surface recombination velocity by diffusion supply of
minority charge carriers to the surface. In accordance with the first model this restriction is removed if the electronhole
pair’s generation takes place in a depleted Schottky layer. The second model assumes the existence of layer
with increased recombination located at the illuminated surface. In this case, the diffusion supply restriction
vanishes if the electron-hole pairs are generated in this near-surface layer. One or another mechanism can be
realized depending on wafer preparation technology. In particular, in the case of Fe-doped samples the obtained
experimental results are well explained by the second model. By comparison the developed theory and obtained
experimental data the important parameters, such as the thickness of the near-surface layer and the lifetime here, as
well as the surface recombination velocity dependences were determined.
Full Material Tracking - Using BSC (Brick-Slice-Code)
Creators: name: Leu, S.
name: Schroll, P.
name: Peters, R.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1805-1806
description: Why it is so important to know the way from each cell to the brick or ingot? BSC code in combination
with measurement modules and production machine data provides complete information in combination with SPC
about the wafer, cell and module process. This tracking system allows a permanent process control as well as
production yield optimization. The main opportunities of the Brick Slice Code (BSC) against other marking systems
are:
• The active area of the cell is not decreased with the code.
• Conclusions from the efficiency measurement of the cell back to the position inside the brick and ingot.
• Easy readability of the code before and after every process step. Reading can start after marking the brick until
the cell is fixed in the module.
• Adaptable for all kind of cells esp. HJT.
• Detection of a missing wafer with BSC. It is not possible with dot-matrix code.
Evaluation of Fire-through Aluminum Pastes for Local Contact Formation in Silicon Solar Cells
Creators: name: Navarrete, E.
name: Kimmerle, A.
name: Thaidigsmann, B.
name: Woehl, R.
name: Ramos-Barrado, J.R.
name: Biro, D.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1839-1841
description: The Fire-Through Contact (FTC) technology uses aluminum pastes with etching ingredients combined
with a non-firing-through Al capping layer to form local contacts during contact firing. It is an alternative to other
local contact techniques such as Laser Fired Contacts (LFC) or local contact openings (LCO). Furthermore, firethrough
Al pastes are also appropriate for the formation of the rear contacts of bifacial p-type solar cells. The FTC
mechanism presented employs a local penetration of the dielectric passivation layer by the aluminum paste during
contact firing and requires only printing technology. An analysis of the FTC contact formation including the surface
recombination velocity and morphology characteristics of the wafer surface and cross-sections are presented for
different aluminum pastes, passivation layers and firing conditions.
Fast Regeneration of the B-O LID and the Protective Effect of the SiNx Capping Layer
Creators: name: Meng, X.
name: Wang, X.
name: Zhang, L.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1723-1725
description: In this paper, the B-O induced LID and regeneration process was studied on industrial CZ wafers with resistivity from 0.7~4.5Ω·cm. The illumination time for the total degrade of low resistivity samples of 0.7Ω·cm can be no more than 2 hour. And the regeneration time is no more than 1 hour. In consideration of reducing the LID and its regeneration cycle time, high
boron-doping level sample is a better choice than the samples’ resistivity above 1Ω·cm. Furthermore, the LID protective effect of the capping SiNx layer is also shown. LID can also be
partially reduced by increasing the Al2O3 layer thickness. Hydrogen originated from the dielectric layer plays a key role in the regeneration process. It is better to introduce hydrogen to the bulk of the silicon by proper firing condition to reduce the regeneration time required for the degraded carrier lifetime.
Lévy copulae for stock returns
Creators: name: Degtiarenko, Fedir
Publisher: name: Humboldt-Universität zu Berlin, Wirtschaftswissenschaftliche Fakultät
Year: 2015
Subjects: subject: Lévy
subject: Copula
subject: VaR
subject: Rückvergleich
subject: copula
subject: backtesting
subject: 310 Statistik
subject: 330 Wirtschaft

description: Die vorliegende Masterarbeit behandelt ein multidimensionales parametrisches Modell des Innertagesverhaltens der Vermögenswerte mittels Lévy-Prozesse und Lévy-Copulas. Das dynamische Modell basiert auf Annahmen der Form von margin-tail-Integralen und der Lévy-Copula-Familie. Es ermöglicht die Erfassung von zeitlich veränderlichen Zusammenhängen. Das ausgearbeitete Modell hat ein breites Anwendungsspektrum von der Ermittlung eines Forecasts bis hin zur Berechnung verschiedener statistischer Kenngrößen wie VaR/CoVar/ES und sogar zur Optionsbewertung.
description: Paper proposes a multidimensional parametric model for intraday behavior of assets using the notions of Lévy processes and Lévy copulae. Based on assumptions of the form of marginal tail integrals and a Lévy copula family, the model is dynamic and allows for capturing time-varying dependency. Obtained model has a wide spectrum of applications: from making forecasts to the calculation of different statistical characteristics such as VaR/CoVaR/ES or even option pricing.
Substrate Cleaning Using Ultrasonics/Megasonics
Creators: name: Kazemi, M.
name: Treichel, H.
name: Maraiov, S.
name: Ligutom, R.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1732-1740
description: Driven by the shrinking feature-sizes in the semiconductor industry and a new awareness of particles in general compromising the
performance of devices like photovoltaic cells, the size of the contaminating particles that need to be removed is pushed down. OEMs face increasingly stringent cleaning requirements.
Failure to meet those requirements results in severe problems with yield and reliability. To this end, advanced cleaning techniques need to be developed to meet future cleaning
challenges.
Family-joining: A fast distance-based method for constructing generally labeled trees
Creators: name: Kalaghatgi, Prabhav
name: Pfeifer, Nico
name: Lengauer, Thomas
Publisher: name: arXiv
Year: 2016
Subjects: subject: Populations and Evolution (q-bio.PE)
subject: FOS: Biological sciences

description: The widely used model for evolutionary relationships is a bifurcating tree with all taxa/observations placed at the leaves. This is not appropriate if the taxa have been densely sampled across evolutionary time and may be in a direct ancestral relationship, or if there is not enough information to fully resolve all the branching points in the evolutionary tree. In this paper, we present a fast distance-based agglomeration method called family-joining (FJ) for constructing so-called generally labeled trees in which taxa may be placed at internal vertices and the tree may contain polytomies. FJ constructs such trees on the basis of pairwise distances and a distance threshold. We tested three methods for threshold selection, FJ-AIC, FJ-BIC and FJ-CV, which minimize Akaike information criterion, Bayesian information criterion, and cross-validation error, respectively. When compared with related methods on simulated data, FJ-BIC was among the best at reconstructing the correct tree across a wide range of simulation scenarios. FJ-BIC was applied to HIV sequences sampled from individuals involved in a known transmission chain. The FJ-BIC tree was found to be compatible with almost all transmission events. On average, internal branches in the FJ-BIC tree have higher bootstrap support than branches in the leaf-labeled bifurcating tree constructed using RAxML. $36\%$ and $25\%$ of the internal branches in the FJ-BIC tree and RAxML tree, respectively, have bootstrap support greater than $70\%$. To the best of our knowledge the method presented here is the first attempt at modeling evolutionary relationships using generally labeled trees.
Mapping of Dopant Distribution of Highly P-Doped Silicon Regions by µ-Raman
Creators: name: Kunz, T.
name: Hessmann, M.T.
name: Auer, R.
name: Brabec, C.J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1702-1705
description: We present a recently introduced method to get the spatial distribution of the dopant concentration
within highly p-doped regions, as they are present in most Si solar cells, by means of μ-Raman spectroscopy. The
method bases on the analysis of the Raman peak shape, which depends on the type and concentration of free charge
carriers. The measurements were made by using a commercially available Raman mapping system. As an example
the method is applied to cross sections of layers prepared for crystalline silicon thin-film solar cells. However the
method is also suitable for other concepts including wafer cells. Apart from the method the paper discusses practical
concerns, such as calibration or interference with internal stress.
Evaluation and Improvement of a Feature-Based Classification Framework to Rate the Quality of Multicystalline Silicon Wafers
Creators: name: Demant, M.
name: Höffler, H.
name: Schwaderer, D.
name: Seidl, A.
name: Haunschild, J.
name: Rein, S.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1650-1654
description: The quality of multicrystalline Silicon (mc-Si) solar cells strongly depends on the quality of the wafer
material. Although carrier lifetime and resistivity measurements provide basic material properties, photoluminescence
(PL) images on as-cut wafers provide a much deeper insight as many crystallization defects become visible. In this
work, a feature-based classification framework is introduced to rate the quality of mc-Si wafers in the as-cut stage according
to the expected IV parameters of the final solar cells. For the classification, three levels of complexity are
compared. In addition to frequently used PL-image features, such as dislocations and contaminated regions, physically
relevant image structures are described on a wavelet basis. Beyond the improved correlation of the PL-features
with quality information, the more detailed description of image structures forms a basis to understand deviations of
measured and expected material quality. The classification model is evaluated within a large experiment on more than
1000 wafers, including a broad variety of wafers from different ingots and bricks from five different manufacturers,
which have been processed in an industrial production line to standard solar cells with aluminium back-surface field.
It is demonstrated that the presented approach allows the open circuit voltage to be predicted with a mean absolute error
(MAE) of only 1.1 mV if the training of the model is performed on a random set of wafers. Moreover, the quality
of wafers from an unknown ingot can be predicted with an MAE of 1.7 mV and from an unknown manufacturer still
with an MAE of 3.6 mV, which proves the actual strength of the chosen approach.
Measurement and Significance of Roughness Inhomogeneity on as-Cut and Isotextured Wafers
Creators: name: Wefringhaus, E.
name: Peter, C.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1636-1638
description: The study was carried out in order to measure, to explain and to analyse the significance of roughness
inhomogeneities on as-cut and isotextured wafers. Roughness inhomogeneity on isotextured wafers apparently
influences cell appearance (homogeneity of silicon nitride thickness / colour). Moreover, electrical performance is
influenced via reflection. Roughness inhomogeneity on isotextured wafers is clearly related to inhomogeneity of ascut-
wafers, which in turn can be attributed to the wire sawing process. Thus, roughness homogeneity of as-cut wafers
should be monitored in wafer sawing processes. This could be done by a new fast measurement method, the Decima
device, which is suitable for inline monitoring. The Decima device may moreover be used for inline control of
etching depth in the isotexturing process. Since the Decima signal (as well as roughness) on the isotextured wafers is
not only related to etching depth but also to primary roughness of the as-cut wafer, for this purpose measurements
before and after texturization have to be carried out.
Analysis of a-Si:H Doping by Suns-Voc Measurments for Silicon Heterojunctions
Creators: name: Bivour, M.
name: Reusch, M.
name: Schröer, S.
name: Feldmann, F.
name: Temmler, J.
name: Hermle, M.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1639-1644
description: Doping of the amorphous silicon (a-Si:H) plays an import role for the device performance of silicon
based heterojunction (SHJ) solar cells. However, a high net doping often interferes with the interface passivation and
the optical properties of the doped a-Si:H. Thus, junction engineering is complex since multiple opposing
requirements have to be fulfilled. Therefore, we present that simple injection-level dependent open-circuit voltage
(Suns-Voc) measurements performed at high illumination intensities give a profound insight into the interplay between
the relevant bulk and interface properties of SHJs. By exposing the SHJ to high illumination intensities the SHJ is
pushed towards flat-band and high-injection conditions where the Suns-Voc characteristic exhibits a strong signature
of the defect recombination within the SHJ. This can be used for a qualitative interpretation of the complex interplay
between the doped a-Si:H and interfacial TCO properties. It is demonstrated by experiment and device simulations
that a correlation between the Suns-Voc characteristic and the maximum power point conditions of the devices exists.
Thus, fill factor losses attributed to the doped a-Si:H can be easily predicted in the early stage of device optimization.
Anomalous temperature dependence of the band-gap in Black Phosphorus
Creators: name: Villegas, Cesar E. P.
name: Rocha, A. R.
name: Marini, Andrea
Publisher: name: arXiv
Year: 2016
Subjects: subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: Black Phosphorus (BP) has gained renewed attention due to its singular anisotropic electronic and optical properties that might be exploited for a wide range of technological applications. In this respect, the thermal properties are particularly important both to predict its room temperature operation and to determine its thermoelectric potential. From this point of view, one of the most spectacular and poorly understood phenomena is, indeed, the BP temperature-induced band-gap opening: when temperature is increased the fundamental band-gap increases instead of decreasing. This anomalous thermal dependence has also been observed, recently, in its monolayer counterpart. In this work, based on \textit{ab-initio} calculations, we present an explanation for this long known, and yet not fully explained, effect. We show that it arises from a combination of harmonic and lattice thermal expansion contributions, which are, in fact, highly interwined. We clearly narrow down the mechanisms that cause this gap opening by identifying the peculiar atomic vibrations that drive the anomaly. The final picture we give explains both the BP anomalous band-gap opening and the frequency increase with increasing volume (tension effect).
description: Published in Nano Letters
Optimization of the Rear Side Opening Pattern for PERC Solar Cell
Creators: name: Lin, Y.-S.
name: Guo, T.-W.
name: Chen, T.-C.
name: Ku, C.-H.
name: Lee, J.-J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1602-1606
description: The rear side opening pattern design is crucial for the efficiency of Passivated Emitter and Rear Contacts (PERC)
solar cells. PERC cells need to form back surface field (BSF) and contacts by locally opening of dielectric layer.
The opening pattern is line or point shaped openings in general. In this paper, eighteen different kinds of patterns
with line and point shaped openings and BSF formed in the local contacts are analyzed. The passivation quality,
reflectance and resistance of the local back surface field (LBSF) regions across wafers are analyzed in detail.
Persistence-driven durotaxis: Generic, directed motility in rigidity gradients
Creators: name: Novikova, Elizaveta A.
name: Raab, Matthew
name: Discher, Dennis E.
name: Storm, Cornelis
Publisher: name: arXiv
Year: 2015
Subjects: subject: Biological Physics (physics.bio-ph)
subject: Soft Condensed Matter (cond-mat.soft)
subject: Cell Behavior (q-bio.CB)
subject: FOS: Physical sciences
subject: FOS: Biological sciences

description: Cells move differently on substrates with different elasticities. In particular, the persistence time of their motion is higher on stiffer substrates. We show that this behavior will result in a net transport of cells directed up a soft-to-stiff gradient. Using simple random walk models with controlled persistence and stochastic simulations, we characterize this propensity to move in terms of the durotactic index measured in experiments. A one-dimensional model captures the essential features of this motion and highlights the competition between diffusive spreading and linear, wavelike propagation. Since the directed motion is rooted in a non-directional change in the behavior of individual cells, the motility is a kinesis rather than a taxis. Persistence-driven durokinesis is generic and may be of use in the design of instructive environments for cells and other motile, mechanosensitive objects.
description: 5 pages, 4 figures
Tunneling in Back-Junction Silicon Solar Cells
Creators: name: Mangersnes, K.
name: Foss, S.E.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1645-1649
description: We have investigated tunneling mechanisms in back-junction silicon solar cells with adjacent highly
doped regions of opposite polarity on the backside. This was exemplified by a back-contact back-junction silicon
solar cell design, and performed through two-dimensional device simulations based on the finite element method. The
effect of using these cells in a solar module was also investigated through SPICE simulations. Trap-assisted tunneling
is found to have a negative influence on the performance of a silicon solar cell through a shunting-like effect, and
thus resulting in a reduced fill factor. Band-to-band tunneling, on the other hand, leads to current breakdowns at low
to moderate voltages, but does not influence the cell performance near the preferred operating point. This implies the
heat distribution under reverse bias will be distributed throughout the whole junction area and that local hotspots can
be avoided. These cells can thus be used in a solar module without the need for bypass diodes. By careful
optimization and tailoring of the doping profiles, it is possible to avoid any significant trap-assisted tunneling, while
at the same taking advantage of band-to-band tunneling.
Analysis of RISE-IBC Solar Cells
Creators: name: Dross, F.
name: Merkle, A.
name: Van Kerschaver, E.
name: Baker-Finch, S.
name: Cabanas-Holmen, K.
name: Peibst, R.
name: Harder, N.-P.
name: Brendel, R.
name: Basore, P.A.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1615-1617
description: In order to test whether the lab facilities of Hanwha Solar America in Santa Clara are compatible with
high-efficiency processing, we commissioned ISFH to fabricate small-area crystalline-silicon high-efficiency solar
cells based on the RISE process. We reach efficiencies exceeding 23%, observed no statistically significant difference
between the cells processed completely at ISFH and the cells partly processed at Hanwha, and conclude that the
facilities are compatible with high-efficiency processing. Meanwhile, we analyze the performance reached by the
cells in the different splits of the experiment. We find that a passivation of the n-type surface based on SiO2 improves
the open-circuit voltage, but suffers from a lower (pseudo-) fill-factor compared to an Al2O3 passivation layer. We
also observe that increasing the emitter width increases the open-circuit voltage thanks to a lower saturation current
but reduces also the fill-factor because of increased majority-carrier resistivity.
On Polynomial Approximations to ${AC}^0$
Creators: name: Harsha, Prahladh
name: Srinivasan, Srikanth
Publisher: name: arXiv
Year: 2016
Subjects: subject: Computational Complexity (cs.CC)
subject: FOS: Computer and information sciences

description: We make progress on some questions related to polynomial approximations of ${\rm AC}^0$. It is known, by works of Tarui (Theoret. Comput. Sci. 1993) and Beigel, Reingold, and Spielman (Proc. $6$th CCC, 1991), that any ${\rm AC}^0$ circuit of size $s$ and depth $d$ has an $\varepsilon$-error probabilistic polynomial over the reals of degree $(\log (s/\varepsilon))^{O(d)}$. We improve this upper bound to $(\log s)^{O(d)}\cdot \log(1/\varepsilon)$, which is much better for small values of $\varepsilon$. We give an application of this result by using it to resolve a question posed by Tal (ECCC 2014): we show that $(\log s)^{O(d)}\cdot \log(1/\varepsilon)$-wise independence fools ${\rm AC}^0$, improving on Tal's strengthening of Braverman's theorem (J. ACM, 2010) that $(\log (s/\varepsilon))^{O(d)}$-wise independence fools ${\rm AC}^0$. Up to the constant implicit in the $O(d)$, our result is tight. As far as we know, this is the first PRG construction for ${\rm AC}^0$ that achieves optimal dependence on the error $\varepsilon$. We also prove lower bounds on the best polynomial approximations to ${\rm AC}^0$. We show that any polynomial approximating the ${\rm OR}$ function on $n$ bits to a small constant error must have degree at least $\widetildeΩ(\sqrt{\log n})$. This result improves exponentially on a recent lower bound demonstrated by Meka, Nguyen, and Vu (arXiv 2015).
Advanced Photoluminescence Imaging-Based Characterization Methods
Creators: name: Stensrud Marstein, E.S.
name: Haug, H.
name: Nærland, T.U.
name: Angelskår, H.
name: Søndenå, R.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1618-1621
description: Photoluminescence (PL) imaging has rapidly become a standard method for lifetime characterization of
solar cell materials and solar cells. A key benefit of PL imaging is that the emitted PL signal, which is correlated with
the local minority charge carrier density, is simultaneously and continuously imaged at every location of the sample
under investigation. In this work, we demonstrate how the applicability of PL imaging can be extended by
introducing different forms of excitation resulting in spatial and/or temporal changes in the minority charge carrier
concentration distribution, and combining this with the introduction of new methods for data analysis. We will
describe two recently presented characterization methods based on PL imaging, namely the so-called PL-V and Spot-
LID methods. In PL-V, lifetimes are measured while a voltage bias applied over surface passivating thin films is
systematically varied. This allows for the extraction of critical material properties determining the surface
recombination velocity, including the fixed charge concentration, the flat band voltage and the ratio of the scattering
cross sections for electrons and holes involved in the surface recombination. We have successfully applied PL-V to a
range of different surface passivation materials applied to silicon (Si) wafers. The other method, Spot-LID, was
developed for investigating light-induced degradation (LID). In this method, the PL emission from a locally
illuminated sample is imaged. By analyzing time-dependent charge carrier concentration distributions around the
locally illuminated region, the role of charge carriers in the LID process can be investigated. We have applied this
method to investigations of different silicon materials exhibiting LID and determined critical charge carrier densities
involved in the LID process in B-doped Czochralski Si.
Serious limitations of the strong equivalence principle
Creators: name: Dai, De-Chang
Publisher: name: arXiv
Year: 2016
Subjects: subject: General Physics (physics.gen-ph)
subject: FOS: Physical sciences

description: It is well known that an accelerated charged particle radiates away energy. However, whether an accelerated neutral composite particle radiates away energy is unclear. We study decoherent Larmor radiation from an accelerated neutral composite object. We find that the neutral object's long wavelength radiation is highly suppressed because radiation from different charges is canceled out. However, the neutral object radiates high energy or short wavelength radiation without any suppression. In that case, radiation from each particle can be treated independently, and it is called the decoherent radiation. We compare a hydrogen atom's decoherent Larmor radiation with its gravitational radiation while the atom is in a circular orbit around a star. Gravitational radiation is stronger than the electromagnetic radiation if the orbital radius is larger than some critical radius. Since the decoherent radiation is related to the object's structure, this implies that the strong equivalence principle which states that gravitational motion does not depend on an object's constitution has severe limitations..
description: 4 figures
Corrosion Resistance Test Based on Electrochemical Noise - Limiting the Number of Long-Lasting and Costly Climate Chamber Tests
Creators: name: Van Aken, B.B.
name: Veldman, D.
name: Gouwen, R.J.
name: Bende, E.E.
name: Eerenstein, W.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1570-1572
description: Damp-heat testing of PV modules is a time-consuming process, taking months. The electrochemical noise
(EcN) set-up is a fast, direct corrosion measurement of solar cells, whereby results can be obtained within one hour. EcN
measurements are presented for several solar cell concepts and different environments. It correlates with damp-heat
degradation involving corrosion, which is rather common in EVA-encapsulated crystalline Si modules. Furthermore, the
EcN test can be done as an evaluation tool when probing alternative brands, formulations or processing for metallisation
pastes and as a screening test for new batches of metallisation paste.
Time-resolved Photoluminescence of Silicon Wafers for Illumination Source with High Repetition Rate: Finite Element Solution
Creators: name: Wang, K.
name: Kampwerth, H.
name: McLean, W.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 1622-1626
description: This paper presents an accurate mathematical model for time-resolved photoluminescence (PL)
response of silicon wafers under the illumination source with high repetition rate. This model is for low level
injection condition and takes the depth dependency of excess minority carrier density into consideration. Numerical
solution based on finite element analysis has been found for carrier density and PL intensity and the validity of this
method has been verified using PC1D.