title: ÐÐ¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ Ð±Ð°ÑÑÐµÑÐ½Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ AlN Ð² Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÐ°Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ GaN Ð´Ð»Ñ Ð¼Ð¾ÑÐ½ÑÑ Ð¡ÐÐ§ ÑÑÐ°Ð½Ð·Ð¸ÑÑÐ¾ÑÐ¾Ð² Ñ Ð´Ð²ÑÐ¼ÐµÑÐ½ÑÐ¼ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¼ Ð³Ð°Ð·Ð¾Ð¼
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Optimization of the AlN barrier layer in GaN-based heterostructures for high-power microwave transistors with two-dimensional electron gas
Creators: name: ÐÐ»Ð¾ÑÐ½Ð¸ÐºÐ¾Ð², ÐÐ°Ð²ÐµÐ»
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: Ð½Ð¸ÑÑÐ¸Ð´Ñ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð² III-Ð³ÑÑÐ¿Ð¿Ñ
Ð´Ð²ÑÐ¼ÐµÑÐ½ÑÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¹ Ð³Ð°Ð·
Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð°Ñ Ð»ÑÑÐµÐ²Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð±Ð°ÑÑÐµÑÐ½ÑÐ¹ ÑÐ»Ð¾Ð¹
group III metal nitrides
two-dimensional electron gas
molecular beam epitaxy
barrier layer

description: ÐÑÐºÐ»ÑÑÐ¸ÑÐµÐ»ÑÐ½ÑÐµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð² ÑÑÐµÑÑÐµÐ¹ Ð³ÑÑÐ¿Ð¿Ñ (IIIâN) Ð´ÐµÐ»Ð°ÑÑ Ð¸Ñ Ð½Ð°Ð¸Ð±Ð¾Ð»ÐµÐµ Ð¶ÐµÐ»Ð°Ð½Ð½ÑÐ¼Ð¸ Ð¸ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½ÑÐ¼Ð¸ Ð² Ð¾Ð±Ð»Ð°ÑÑÐ¸ Ð¿ÑÐ¸Ð±Ð¾ÑÐ¾ÑÑÑÐ¾ÐµÐ½Ð¸Ñ Ð¸ Ð¾Ð¿ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸ Ð½Ð° Ð¸Ñ Ð¾ÑÐ½Ð¾Ð²Ðµ. ÐÑ ÑÑÑÑÐºÑÑÑÑ Ð¾ÑÐ»Ð¸ÑÐ°ÑÑÑÑ Ð²ÑÐ´Ð°ÑÑÐ¸Ð¼Ð¸ÑÑ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ°Ð¼Ð¸: Ð²ÑÑÐ¾ÐºÐ¸Ðµ Ð·Ð½Ð°ÑÐµÐ½Ð¸Ñ Ð¿ÑÐ¾Ð±Ð¸Ð²Ð½ÑÑ Ð¿Ð¾Ð»ÐµÐ¹, ÑÐµÑÐ¼Ð¸ÑÐµÑÐºÐ°Ñ Ð¸ ÑÐ°Ð´Ð¸Ð°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÑÑÐ¾Ð¹ÑÐ¸Ð²Ð¾ÑÑÑ, ÑÑÐ¾ Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÐµÑ ÑÐ¾Ð·Ð´Ð°Ð²Ð°ÑÑ Ð¸ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°ÑÑ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ III-N Ð¿ÑÐ¸Ð±Ð¾ÑÑ Ð²Ð¾ Ð¼Ð½Ð¾Ð³Ð¸Ñ Ð¾Ð±Ð»Ð°ÑÑÑÑ ÑÐµÑÐ½Ð¸ÐºÐ¸, Ð²ÐºÐ»ÑÑÐ°Ñ Ð¸ Ð²Ð¾ÐµÐ½Ð½ÑÑ. ÐÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ñ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½ÑÐµ ÑÑÐµÐ´ÑÑÐ²Ð° Microsoft Excel Ð´Ð»Ñ Ð¾Ð±ÑÐ°Ð±Ð¾ÑÐºÐ¸ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÑ Ð´Ð°Ð½Ð½ÑÑ. Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¾Ð±ÑÐ°Ð±Ð¾ÑÐºÐ¸ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÑ Ð´Ð°Ð½Ð½ÑÑ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½Ñ Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¼ÑÐ»ÑÑÐ¸Ð¼ÐµÐ´Ð¸Ð¹Ð½ÑÑ ÑÑÐµÐ´ÑÑÐ² Origin. Ð¦ÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐ»Ð¾ÑÑ Ð¾Ð¿Ð¸ÑÐ°Ð½Ð¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ² Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ðµ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ GaN/AlN Ñ Ð±Ð°ÑÑÐµÑÐ½ÑÐ¼ ÑÐ»Ð¾ÐµÐ¼ Ð¼Ð°Ð»Ð¾Ð¹ ÑÐ¾Ð»ÑÐ¸Ð½Ñ. ÐÐ¾ ÑÐ¾Ð´Ñ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ Ð²ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ñ ÑÐ»ÐµÐ´ÑÑÑÐ¸Ðµ Ð·Ð°Ð´Ð°ÑÐ¸: 1. ÐÐ¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ ÑÐ¾ÑÑÐ° Ð²ÑÑÐ¾ÐºÐ¾ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð³Ð¾ Ð±ÑÑÐµÑÐ½Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ AlN. 2. ÐÐ¾Ð»ÑÑÐµÐ½Ð¸Ðµ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ GaN/AlN c ÑÐ°Ð·Ð½Ð¾Ð¹ ÑÐ¾Ð»ÑÐ¸Ð½Ð¾Ð¹ Ð±Ð°ÑÑÐµÑÐ½Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ AlN. Ð±ÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÑÑÑÑÐºÑÑÑÑ Ñ Ð¿Ð¾Ð´Ð²Ð¸Ð¶Ð½Ð¾ÑÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð² Ð² 980 ÑÐ¼Â²/ÐâÑ Ð¸ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸ÐµÐ¹ 1.5 Ã 10Â¹Â³ ÑÐ¼â»Â² Ð¿ÑÐ¸ ÑÑÐ¾Ð¼ ÑÐ¾Ð»ÑÐ¸Ð½Ð° Ð±Ð°ÑÑÐµÑÐ½Ð¾Ð³Ð¾ ÑÐ»Ð¾Ñ Ð±ÑÐ»Ð° ÑÐ½Ð¸Ð¶ÐµÐ½Ð° Ð´Ð¾ 4 Ð½Ð¼. 3. ÐÐ¾Ð½ÑÑÐ¾Ð»Ñ Ð² Ð¿ÑÐ¾ÑÐµÑÑÐµ ÑÐ¾ÑÑÐ° Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ Ð¼ÐµÑÐ¾Ð´Ð°Ð¼Ð¸ Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ð¸ Ð±ÑÑÑÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð² Ð½Ð° Ð½Ð°ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐ°Ð¿Ð°Ñ ÑÐ¾ÑÑÐ° Ð¸ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð¹ Ð¸Ð½ÑÐµÑÑÐµÑÐ¾Ð¼ÐµÑÑÐ¸Ð¸.Â 
description: The exceptional properties of metals of the third group (IIIâN) make them the most desirable and promising in the field of instrument making and optoelectronics based on them. Their structures are distinguished by outstanding characteristics and properties: high values of breakdown fields, thermal and radiation resistance, which makes it possible to create and use devices based on III-N in many fields of technology, including military. Microsoft Excel software was used to process experimental data. The results of experimental data processing are presented using Origin 2019b multimedia tools. The purpose of the work was to describe the properties and obtain GaN/AlN heterostructures with a barrier layer of small thickness. During the work, the following tasks were completed: 1. Optimization of growth conditions for a high-temperature AlN buffer layer. 2. Preparation of GaN/AlN heterostructures with different thicknesses of the AlN barrier layer. structures with an electron mobility of 980 cmÂ²/Vâs and a concentration of 1.5 Ã 10Â¹Â³ cmâ»Â² were obtained, while the thickness of the barrier layer was reduced to 4 nm. 3. Monitoring during the growth of heterostructures using high-energy electron diffraction methods at the initial stages of growth and laser interferometry.