title: ÐÑÐ¸Ð¼ÐµÑÐ½Ð°Ñ Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð³Ð¾ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð° Ð² ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼Ð°Ñ GaAs/AlGaAs Ð¿ÑÐ¸ Ð¼ÐµÐ¶Ð·Ð¾Ð½Ð½Ð¾Ð¼ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð¼ Ð²Ð¾Ð·Ð±ÑÐ¶Ð´ÐµÐ½Ð¸Ð¸
title: Ð½Ð°ÑÑÐ½ÑÐ¹ Ð´Ð¾ÐºÐ»Ð°Ð´
titleType: Subtitle
title: Impurity-related terahertz luminescence in GaAs/AlGaAs quantum wells under interband optical excitation
Creators: name: ÐÐ°ÑÐ¾Ð², ÐÐ²Ð°Ð½
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2019
Subjects: Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸Ðº
ÐºÐ²Ð°Ð½ÑÐ¾Ð²Ð°Ñ ÑÐ¼Ð°
Ð¿ÑÐ¸Ð¼ÐµÑÑ
Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ðµ
ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²ÑÐ¹ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½
ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ°ÑÐ¸Ñ
ÑÑÐ¸Ð¼ÑÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ðµ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ðµ
semiconductor
quantum well
impurity
radiation
terahertz range
compensation
stimulated emission

description: ÐÐ°ÑÑÐ¾ÑÑÐ°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð½Ð¸Ð·ÐºÐ¾ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð¹ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸, ÑÐ²ÑÐ·Ð°Ð½Ð½Ð¾Ð¹ Ñ Ð¿ÑÐ¸Ð¼ÐµÑÐ½ÑÐ¼Ð¸ Ð¿ÐµÑÐµÑÐ¾Ð´Ð°Ð¼Ð¸ Ð½ÐµÑÐ°Ð²Ð½Ð¾Ð²ÐµÑÐ½ÑÑ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÐµÐ¹ Ð·Ð°ÑÑÐ´Ð° Ð² Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑÐ°Ñ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ Ð² ÑÑÐ»Ð¾Ð²Ð¸ÑÑ Ð¼ÐµÐ¶Ð·Ð¾Ð½Ð½Ð¾Ð³Ð¾ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð²Ð¾Ð·Ð±ÑÐ¶Ð´ÐµÐ½Ð¸Ñ. ÐÐ±Ð½Ð°ÑÑÐ¶ÐµÐ½Ð¾ Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¾ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ðµ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ðµ, ÑÐ²ÑÐ·Ð°Ð½Ð½Ð¾Ðµ Ñ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ð¼Ð¸ Ð¿ÐµÑÐµÑÐ¾Ð´Ð°Ð¼Ð¸ Ð½ÐµÑÐ°Ð²Ð½Ð¾Ð²ÐµÑÐ½ÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð² Ð¸Ð· Ð¿ÐµÑÐ²Ð¾Ð¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¹ Ð¿Ð¾Ð´Ð·Ð¾Ð½Ñ Ð¸ Ð²Ð¾Ð·Ð±ÑÐ¶Ð´ÐµÐ½Ð½ÑÑ Ð´Ð¾Ð½Ð¾ÑÐ½ÑÑ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ð¹ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ð½Ð¾Ðµ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ðµ Ð´Ð¾Ð½Ð¾ÑÐ¾Ð² Ð² ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼Ð°Ñ. ÐÐ¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ðµ ÑÐ¸ÑÐ¸Ð½Ñ Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼, Ð¿ÑÐ¸Ð²Ð¾Ð´Ð¸Ñ Ðº ÑÐ¼ÐµÑÐµÐ½Ð¸Ñ Ð¿Ð¾ ÑÐ¿ÐµÐºÑÑÑ Ð¿Ð¾Ð»Ð¾ÑÑ Ð¿ÑÐ¸Ð¼ÐµÑÐ½Ð¾Ð¹ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸. ÐÐ¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ ÑÐ¾ÑÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¾Ð¹ ÑÐµÑÐµÑÐºÐ¸ Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑÑ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ Ð¿ÑÐ¸Ð²Ð¾Ð´Ð¸Ñ Ðº ÑÐ¿Ð°Ð´Ñ Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ Ð¿ÑÐ¸Ð¼ÐµÑÐ½Ð¾Ð¹ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸. ÐÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼ Ð¿ÑÐ¸Ð¼ÐµÑÐ½Ð¾Ð¹ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð² Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÑ Ð¼ÐµÐ»ÐºÐ¸Ð¼Ð¸ Ð´Ð¾Ð½Ð¾ÑÐ°Ð¼Ð¸ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼Ð°Ñ Ð² ÑÑÐ»Ð¾Ð²Ð¸ÑÑ Ð¼ÐµÐ¶Ð·Ð¾Ð½Ð½Ð¾Ð³Ð¾ ÑÐ¾ÑÐ¾Ð²Ð¾Ð·Ð±ÑÐ¶Ð´ÐµÐ½Ð¸Ñ.
ÐÑÐµÐ´Ð»Ð¾Ð¶ÐµÐ½Ñ Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼Ñ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ñ Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ Ð¿ÑÐ¸Ð¼ÐµÑÐ½Ð¾Ð¹ ÑÐµÑÐ°Ð³ÐµÑÑÐ¾Ð²Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð² Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑÐ°Ñ Ñ Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¼Ð¸ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ Ð¿ÑÐ¸ Ð¼ÐµÐ¶Ð·Ð¾Ð½Ð½Ð¾Ð¼ ÑÐ¾ÑÐ¾Ð²Ð¾Ð·Ð±ÑÐ¶Ð´ÐµÐ½Ð¸Ð¸ Ð·Ð° ÑÑÐµÑ ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ°ÑÐ¸Ð¸ Ð´Ð¾Ð½Ð¾ÑÐ¾Ð² Ð°ÐºÑÐµÐ¿ÑÐ¾ÑÐ°Ð¼Ð¸ Ð² ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼Ð°Ñ, Ð° ÑÐ°ÐºÐ¶Ðµ Ð·Ð° ÑÑÐµÑ Ð¾ÑÐ³Ð°Ð½Ð¸Ð·Ð°ÑÐ¸Ð¸ ÑÑÐ¸Ð¼ÑÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ð±Ð»Ð¸Ð¶Ð½ÐµÐ³Ð¾ Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½Ð¾Ð³Ð¾ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð° Ð¼ÐµÐ¶Ð´Ñ Ð¾ÑÐ½Ð¾Ð²Ð½ÑÐ¼ Ð´Ð¾Ð½Ð¾ÑÐ½ÑÐ¼ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸ÐµÐ¼ Ð¸ Ð¿ÐµÑÐ²Ð¾Ð¹ Ð´ÑÑÐ¾ÑÐ½Ð¾Ð¹ Ð¿Ð¾Ð´Ð·Ð¾Ð½Ð¾Ð¹.
description: The presented work is devoted to the study of low temperature terahertz luminescence, related to the impurity transitions of nonequilibrium charge carriers in nanostructures with quantum wells under interband optical pumping. Terahertz radiation, associated with an optical transitions of nonequilibrium electrons from the first electron subband and excited donor states to the ground donor states in quantum wells are observed and investigated. It is shown, that change of the width of doped quantum well leads to the spectral shift of the impurity-related terahertz photoluminescence band. The temperature quenching of terahertz photoluminescence intensity is also shown. The mechanism of impurity-related terahertz photoluminescence in quantum wells doped with shallow donors under interband optical excitation is determined. 
Mechanisms of the increase of inpurity-assisted terahertz photoluminescence intensity in nanostructures with doped quantum wells under interband photoexcitation due to the compensation of donors with acceptors in quantum wells, as well as due to the organisation of stimulated near-infrared emission between ground donor states and first heavy hole subband in quantum wells are proposed and investigated.