title: ÐÑÐµÐ·Ð¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¿Ð¾Ð»Ñ Ð² Ð°ÑÐ¾Ð¼Ð½Ð¾-ÑÐ¿Ð¾ÑÑÐ´Ð¾ÑÐµÐ½Ð½ÑÑ ÑÐ²ÐµÑÐ´ÑÑ ÑÐ°ÑÑÐ²Ð¾ÑÐ°Ñ GaInP2
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Piezo-electic fields in self-organized solid solution GaInP2
Creators: name: ÐÐ°Ð»ÑÐ½Ð¾Ð², ÐÐµÑÑ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¿ÑÐµÐ·Ð¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¿Ð¾Ð»Ñ
ÑÐ¿Ð¾Ð½ÑÐ°Ð½Ð½Ð¾Ðµ ÑÐ¿Ð¾ÑÑÐ´Ð¾ÑÐµÐ½Ð¸Ðµ
ÑÐ²ÐµÑÐ´ÑÐ¹ ÑÐ°ÑÑÐ²Ð¾Ñ GaInP2
Ð´Ð¾Ð¼ÐµÐ½Ð½Ð°Ñ ÑÑÑÑÐºÑÑÑÐ° ÑÐ²ÐµÑÐ´Ð¾Ð³Ð¾ ÑÐ°ÑÑÐ²Ð¾ÑÐ°
ÐÐÐ¡-Ð³Ð¸Ð´ÑÐ¸Ð´Ð½Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ (ÐÐÐ¡ÐÐ­)
ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ (Ð¤Ð)
ÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°ÑÐ¸Ð¾Ð½Ð½Ð¾Ðµ (ÑÐ°Ð¼Ð°Ð½Ð¾Ð²ÑÐºÐ¾Ðµ) ÑÐ°ÑÑÐµÑÐ½Ð¸Ðµ ÑÐ²ÐµÑÐ° (ÐÐ Ð¡)
ÑÐ»ÐµÐºÑÑÐ¾ÑÐ¸Ð»Ð¾Ð²Ð°Ñ (ÐÐµÐ»ÑÐ²Ð¸Ð½Ð¾Ð²ÑÐºÐ°Ñ) Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
piezo-electic fields
solid solution GaInP2
self-organizÐµ
domain structure of solid solution
Metalorganic chemical vapour deposition (MOCVD)
photoluminescence (PL)
Raman light scattering
Kelvin-probe microscopy

description: Ð Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÐµ Ð±ÑÐ»Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÑÐ²ÐµÑÐ´Ð¾Ð³Ð¾ ÑÐ°ÑÑÐ²Ð¾ÑÐ° GaInP2 ÑÐ°Ð·Ð½Ð¾Ð¹ ÑÐ¾Ð»ÑÐ¸Ð½Ñ. ÐÐ»Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð±ÑÐ»Ð¾ Ð²ÑÑÐ°ÑÐµÐ½Ð¾ 4 Ð¾Ð±ÑÐ°Ð·ÑÐ° Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ GaAs Ñ ÑÐ¾Ð»ÑÐ¸Ð½Ð¾Ð¹ ÑÐ»Ð¾Ñ GaInP2 70, 250, 500 Ð¸ 1500 Ð½Ð¼. ÐÐ±ÑÐ°Ð·ÑÑ Ð²ÑÑÐ°ÑÐ¸Ð²Ð°Ð»Ð¸ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÐÐÐ¡-Ð³Ð¸Ð´ÑÐ¸Ð´Ð½Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²ÐºÐ»ÑÑÐ°Ð»Ð¾ Ð² ÑÐµÐ±Ñ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¸ ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¼ÐµÑÐ¾Ð´Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ. ÐÑÐ¾Ð¸Ð·Ð²Ð¾Ð´Ð¸Ð»Ð°ÑÑ ÑÐµÐ³Ð¸ÑÑÑÐ°ÑÐ¸Ñ ÑÐ¿ÐµÐºÑÑÐ¾Ð² ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸, Ð° ÑÐ°ÐºÐ¶Ðµ ÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°ÑÐ¸Ð¾Ð½Ð½Ð¾Ð³Ð¾ ÑÐ°ÑÑÐµÑÐ½Ð¸Ñ ÑÐ²ÐµÑÐ°. ÐÐ° Ð¾ÑÐ½Ð¾Ð²Ð°Ð½Ð¸Ð¸ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ Ð¼ÐµÑÐ¾Ð´Ð¾Ð² Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð±ÑÐ»Ð¸ ÑÐ´ÐµÐ»Ð°Ð½Ñ Ð²ÑÐ²Ð¾Ð´Ñ Ð¾ Ð½Ð°Ð»Ð¸ÑÐ¸Ðµ ÑÐ¾Ð½ÐºÐ¾Ð¹ ÑÑÑÑÐºÑÑÑÑ Ñ Ð²ÑÐµÑ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð², Ð¾ ÑÐ°Ð·Ð»Ð¸ÑÐ¸Ðµ ÑÐ¿ÐµÐºÑÑÐ¾Ð² ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² ÑÐ°Ð·Ð½Ð¾Ð¹ ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð¿Ð¾ Ð´Ð»Ð¸Ð½Ðµ Ð²Ð¾Ð»Ð½Ñ, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¾Ð± Ð¾Ð´Ð¸Ð½Ð°ÐºÐ¾Ð²Ð¾Ð¹ ÑÐ¿Ð¾ÑÑÐ´Ð¾ÑÐµÐ½Ð½Ð¾ÑÑÐ¸ Ð²ÑÐµÑ ÑÐµÑÑÑÐµÑ ÑÑÑÑÐºÑÑÑ ÑÐ°Ð·Ð½Ð¾Ð¹ ÑÐ¾Ð»ÑÐ¸Ð½Ñ. ÐÑÐ» Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÑÐ»ÐµÐºÑÑÐ¾ÑÐ¸Ð»Ð¾Ð²Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸, Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ð°Ð½Ð¸Ð¸ ÐºÐ¾ÑÐ¾ÑÐ¾Ð³Ð¾ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÐºÐ°ÑÑÐ¸Ð½Ñ ÑÐ°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ Ð¿Ð¾ÑÐµÐ½ÑÐ¸Ð°Ð»Ð° Ð½Ð° Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¿Ð¾ Ð½Ð¾ÑÐ¼Ð°Ð»Ð¸ Ðº Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ ÑÐ²ÐµÑÐ´Ð¾Ð³Ð¾ ÑÐ°ÑÑÐ²Ð¾ÑÐ° GaInP2 ÑÐ°Ð·Ð½Ð¾Ð¹ ÑÐ¾Ð»ÑÐ¸Ð½Ñ. Ð¢Ð°ÐºÐ¶Ðµ Ð±ÑÐ»Ð¸ ÑÐ°ÑÑÑÐ¸ÑÐ°Ð½Ñ Ð¿ÑÐµÐ·Ð¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¿Ð¾Ð»Ñ Ð² Ð»Ð°ÑÐµÑÐ°Ð»ÑÐ½Ð¾Ð¼ Ð¸ Ð½Ð¾ÑÐ¼Ð°Ð»ÑÐ½Ð¾Ð¼ Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸ÑÑ.
description: In this work were investigated the properties of solid solutions GaInP2 of different thicknesses. For the research four samples were grown on a GaAs substrate with GaInP2 layer thickness of 70, 250, 500, and 1500 nm. The samples were grown by the MOCVD method. The research included optical and electrical research methods. The photoluminescence and Raman spectra were recorded as optical spectra. On the basis of optical research methods, conclusions were drawn about the presence of a thin structure in all samples, about the difference in the photoluminescence spectra with respect to the wavelength, as well as about the same ordering of all four structures of different thicknesses. Electric force microscopy was used as an electrical research method, on the basis of which patterns of potential distribution on the surface, as well as along the normal to the surface of the GaInP2 solid solution of various thicknesses, were obtained. Piezoelectric fields were also calculated in the lateral and normal directions.