title: ÐÐ¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ Ð´Ð²Ð¾Ð¹Ð½Ð¾Ð¹ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ GaAs/AlGaAs Ð¿Ð¾ÑÐ»Ðµ Ð¿ÑÑÐ¼Ð¾Ð¹ Ð¸Ð¾Ð½Ð½Ð¾Ð¹ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Micro-photoluminescent propeties of focused ion beam-treated GaAs/AlGaAs double heterostructure
Creators: name: ÐÐ°ÑÐ¸Ð»ÑÐºÐ¾Ð²Ð°, ÐÐ»ÐµÐ½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2019
Subjects: Ð¿ÑÑÐ¼Ð°Ñ Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð°Ñ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ñ
ÑÑÐ¾ÐºÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¹ Ð¸Ð¾Ð½Ð½ÑÐ¹ Ð¿ÑÑÐ¾Ðº
Ð¼Ð¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ
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ÑÐ°Ð´Ð¸Ð°ÑÐ¸Ð¾Ð½Ð½ÑÐµ Ð´ÐµÑÐµÐºÑÑ
Ð¾ÑÐ¶Ð¸Ð³ ÑÐ°Ð´Ð¸Ð°ÑÐ¸Ð¾Ð½Ð½ÑÑ Ð´ÐµÑÐµÐºÑÐ¾Ð²
Ð´Ð²Ð¾Ð¹Ð½Ð°Ñ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÐ°
Ð°ÑÑÐµÐ½Ð¸Ð´ Ð³Ð°Ð»Ð»Ð¸Ñ
ion-beam lithography
focused ion beam
micro-photoluminescence
internal quantum efficiency
radiation defects
radiation defect annealing
double heterostructure
gallium arsenide

description: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð¾Ð±ÑÐ°Ð±Ð¾ÑÐºÐ¸ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð´Ð²Ð¾Ð¹Ð½Ð¾Ð¹ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÑ GaAs/AlGaAs Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð¿ÑÑÐ¼Ð¾Ð¹ Ð¸Ð¾Ð½Ð½Ð¾Ð¹ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ð¸ Ð½Ð° Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÑ ÑÐ¸Ð³Ð½Ð°Ð»Ð° Ð¼Ð¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð² Ð¿Ð¾ÑÐµÐ½ÑÐ¸Ð°Ð»ÑÐ½Ð¾Ð¹ ÑÐ¼Ðµ GaAs. Ð ÑÐ¾Ð´Ðµ ÑÐµÑÐ¸Ð¸ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ¾Ð² Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¼ÐµÑÐ¾Ð´Ð° Ð¼Ð¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ ÑÐ°Ð´Ð¸Ð°ÑÐ¸Ð¾Ð½Ð½ÑÐµ Ð¿Ð¾Ð²ÑÐµÐ¶Ð´ÐµÐ½Ð¸Ñ, Ð¾Ð±ÑÐ°Ð·Ð¾Ð²Ð°Ð²ÑÐ¸ÐµÑÑ Ð² ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð¿ÑÑÐ¼Ð¾Ð³Ð¾ Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ, Ð¿ÑÐ¸Ð²Ð¾Ð´ÑÑ Ðº ÑÐ¸Ð»ÑÐ½Ð¾Ð¼Ñ Ð¿Ð°Ð´ÐµÐ½Ð¸Ñ ÑÐ¸Ð³Ð½Ð°Ð»Ð° Ð¼Ð¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ ÑÑÑÑÐºÑÑÑÑ. ÐÐ¾ÑÐ»Ðµ ÑÐµÑÐ¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¾ÑÐ¶Ð¸Ð³Ð° Ð¿ÑÐ¸ Ð¢ = 620Ð¡ Ð½Ð°Ð±Ð»ÑÐ´Ð°Ð»Ð¾ÑÑ Ð¿Ð¾ÑÑÐ¸ Ð¿Ð¾Ð»Ð½Ð¾Ðµ (Ð´Ð¾ 90%) Ð²Ð¾ÑÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½Ð¸Ðµ Ð¸Ð½ÑÐµÐ½ÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ ÑÐ¸Ð³Ð½Ð°Ð»Ð° Ð¼Ð¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ñ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐµÐ¹, Ð¿Ð¾Ð´Ð²ÐµÑÐ³ÑÐ¸ÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ ÑÐ²Ð¸Ð´ÐµÑÐµÐ»ÑÑÑÐ²ÑÑÑ Ð¾ Ð¿ÑÐ¸Ð¼ÐµÐ½Ð¸Ð¼Ð¾ÑÑÐ¸ Ð¿ÑÑÐ¼Ð¾Ð¹ Ð¸Ð¾Ð½Ð½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð¹ Ð»Ð¸ÑÐ¾Ð³ÑÐ°ÑÐ¸Ð¸ Ð´Ð»Ñ Ð¸Ð·Ð³Ð¾ÑÐ¾Ð²Ð»ÐµÐ½Ð¸Ñ Ð°ÐºÑÐ¸Ð²Ð½ÑÑ ÑÑÑÑÐ¾Ð¹ÑÑÐ² Ð¸Ð½ÑÐµÐ³ÑÐ°Ð»ÑÐ½Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð½Ð¸ÐºÐ¸ Ð½Ð° Ð±Ð°Ð·Ðµ Ð´Ð°Ð½Ð½Ð¾Ð¹ Ð³ÑÑÐ¿Ð¿Ñ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð².
description: The photoluminescent properties of focused ion beam-treated GaAs/AlGaAs double heterostructure were studied using a micro-photoluminescence spectroscopy technique. It was shown that radiation damage induced by FIB lithography leads to the loss of micro-photoluminescence intensity of the structure. Subsequent 620Ð¡ thermal annealing of the structure leads up to 90% to the recovery of the internal quantum efficiency. Achieved results prove focused ion beam technique to be potent for the fabrication of photonic structures based on A3B5 materials containing active layer.