cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Supplementary document for Ultra-compact silicon photonics highly dispersive elements for low-latency signal processing - 6214567.pdf
Creators: name: Kaushal, Saket
name: Roberge, Anthony
name: Kashyap, Raman
name: Azana, Jose
Publisher: name: Optica Publishing Group
Year: 2023
Subjects: Uncategorized

description: Supplement 1
Epitaxial Growth of Silicon by Electron Beam Evaporation Deposition
Creators: name: Stange, M.
name: Sunde, T.O.
name: Dahl-Hansen, R.
name: Azar, A.S.
name: Graff, J.S.
name: Nørgaard, J.
name: Ulyashin, A.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 507-510
description: In this paper we report epitaxial growth of thin p-doped Si films at Si (100) substrates at deposition temperatures Ts = 600–1000 °C under non-ultra-high vacuum conditions using high rate electron beam evaporation. It is established that fully crystalline Si based layers (~ 50 µm thick) can be fabricated at a deposition rate of ~1.5 µm/min. The crystallinity and stress were analyzed by Raman spectroscopy, which revealed a peak at 520 cm−1, confirming crystalline and stress-free silicon. Electron Backscatter Diffraction (EBSD) shows that the film growth proceeds epitaxially on the crystalline Si supporting substrate with excellent crystallinity at 800 and 1000°C. Hall effect measurements show that the film deposited at 1000 °C has a resistivity of 5.01 Ωcm, carrier concentration of 4.9315 cm–3 and mobility of 253 cm²V–1s–1. These values  comparable to  those obtained for c-Si material grown using the same Si feedstock (solar grade Si).  Secco etching tests were also performed to analyze the defect density in the films. The films deposited at higher temperatures have  lower etch pits density.  These results demonstrates that high temperature electron beam deposition can  be considered as a promising and cost-effective alternative to conventional CVD based growth of epi-Si layers.
High Mobility Transparent Conductive Oxides for Silicon Heterojunction Solar Cells Deposited by Rotatable Magnetrons
Creators: name: Dimer, M.
name: Cruz, A.
name: Wang, E.C.
name: Morales-Vilches, A.B.
name: Löhnert, J.
name: Graupner, U.
name: Thumsch, M.
name: Stannowski, B.
name: Schneiderlöchner, E.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Heterojunction Solar Cells

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 456-459
description: Sputtered indium tin oxide (ITO) is a widespread used material for application as transparent conducting oxide as the front contact of rear-junction silicon heterojunction solar cells. Standard ITO films suffer from too high parasitic absorption in both the short- and the long-wavelength range. The aim of this contribution is to investigate lower absorbing TCOs deposited with industrial DC sputtering from rotatable targets. High Voc values >735 mV demonstrate that in spite of the high-power industrial DC sputter process no significant sputter damage is observed, independent of the target material. Cell efficiencies up to 23.3% are obtained with titanium-doped (ITiO) and tin-doped indium oxide (ITO 99/1). The highest short circuit current values of 39.6 mA/cm2 are reached with an ultimately low-carrier and high-mobility indium-oxide-based material. The cell efficiency in this case, however, is over-compensated by a too low FF, mostly due to a higher contact resistivity and TCO sheet resistances. We ascribe this effect to the very low carrier concentration.
Measurement of total and differential $W^+W^-$ production cross sections in proton-proton collisions at $\sqrt{s}=$ 8 TeV with the ATLAS detector and limits on anomalous triple-gauge-boson couplings
Creators: name: ATLAS Collaboration
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Experiment (hep-ex)
subject: FOS: Physical sciences

description: The production of $W$ boson pairs in proton-proton collisions at $\sqrt{s}=$ 8 TeV is studied using data corresponding to 20.3 fb$^{-1}$ of integrated luminosity collected by the ATLAS detector during 2012 at the CERN Large Hadron Collider. The $W$ bosons are reconstructed using their leptonic decays into electrons or muons and neutrinos. Events with reconstructed jets are not included in the candidate event sample. A total of 6636 $WW$ candidate events are observed. Measurements are performed in fiducial regions closely approximating the detector acceptance. The integrated measurement is corrected for all acceptance effects and for the $W$ branching fractions to leptons in order to obtain the total $WW$ production cross section, which is found to be 71.1$\pm1.1$(stat)$^{+5.7}_{-5.0}$(syst)$\pm1.4$ pb. This agrees with the next-to-next-to-leading-order Standard Model prediction of 63.2$^{+1.6}_{-1.4}$(scale)$\pm1.2$(PDF) pb. Fiducial differential cross sections are measured as a function of each of six kinematic variables. The distribution of the transverse momentum of the leading lepton is used to set limits on anomalous triple-gauge-boson couplings.
description: 61 pages plus author list (78 pages total), 16 figures, 36 tables, published version, all figures including auxiliary figures are available at https://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PAPERS/STDM-2013-07/
When Segment Anything Model Meets Food Instance Segmentation
Creators: Hanyu Jiang
Xing Lan
Jiayi Lyu
Kun Dong
Jian Xue
Publisher: name: IEEE Signal Processing Society
Year: 2024

description: Here are supplementary materials for the paper "When Segment Anything Model Meets Food Instance Segmentation", which includes an appendix for the paper, examples of FoodInsSeg, examples of InsSAM-Tool, and dataset documentation. These contents aim to provide readers with more details for better understanding the research contributions in this work.
The geometric phase of Z$_n$- and T-symmetric nanomagnets as a classification toolkit
Creators: name: Prada, Marta
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: We derive the general form of the non-trivial geometric phase resulting from the unique combination of point group and time reversal symmetries. This phase arises e.g. when a magnetic adatom is adsorbed on a non-magnetic C$_n$ crystal surface, where $n$ denotes the fold of the principal axis. The energetic ordering and the relevant quantum numbers of the eigenstates are entirely determined by this quantity. Moreover, this phase allows to conveniently predict the protection mechanism of any prepared state, shedding light onto a large number of experiments and allowing a classification scheme. Owing to its robustness this geometric phase also has great relevance for a large number of applications in quantum computing, where topologically protected states bearing long relaxation times are highly desired.
description: 7 pages, 2 figures
Implementation of a Novel Silicon Heterojunction IBC Process Flow Using Partial Etching of Doped a-Si:H with Efficiencies Close to 23%
Creators: name: Sivaramakrishnan Radhakrishnan, H.
name: Gius Uddin, M.D.
name: Xu, M.
name: Cho, J.
name: Ghannam, M.Y.
name: Gordon, I.
name: Szlufcik, J.
name: Poortmans, J.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Heterojunction Solar Cells

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 448-451
description: We present a novel process sequence to simplify the rear-side patterning of the heterojunction IBC cells. In this approach, interdigitated strips of a-Si:H (i/p+) and a-Si:H (i/n+) are achieved by partially etching a blanket a-Si:H (i/p+) stack through a hard mask to remove only the p+ a-Si:H layer and replace it in situ with an n+ a-Si:H layer. This eliminates the ex situ wet clean after dry etch and also prevents re-exposure of the c-Si surface during rear-side processing. High-quality passivation and contact resistance comparable to reference translates into cell performance that is also similar to that of cells from the reference process. The best cell has an efficiency of 22.9% and VOC close to 730 mV, demonstrating that the developed partial etch process sequence can be successfully implemented to achieve cell performance comparable to reference, but with a simpler process.
Supplementary document for Compact laser modulation system for a portable atomic gravimeter - 6208109.pdf
Creators: name: Jimenez-Garcia, Karina
name: López-Vázquez, Alejandra
name: Garcia, Eduardo Gomez
name: Maldonado, Mario González
name: Corzo, Neil
name: de Carlos López, Eduardo
name: Franco, John
name: Jimenez-Mier, Jose
name: López-González, José
name: López-Monjaraz, Cristian
Publisher: name: Optica Publishing Group
Year: 2023
Subjects: Uncategorized

description: Supplemental material
Perturbative unification of gauge couplings in supersymmetric $E_6$ models
Creators: name: Cho, Gi-Chol
name: Maru, Nobuhito
name: Yotsutani, Kaho
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: We study gauge coupling unification in supersymmetric $E_6$ models where an additional $\mathrm{U}(1)'$ gauge symmetry is broken near the TeV scale and a number of exotic matter fields from the $\bm{27}$ representations have $O(\mathrm{TeV})$ mass. Solving the 2-loop renormalization group equations of gauge couplings and a kinetic mixing coupling between the $\mathrm{U}(1)'$ and $\mathrm{U}(1)_Y$ gauge fields, we find that the gauge couplings fall into the non-perturbative regime below the GUT scale. We examine threshold corrections on the running of gauge couplings from both light and heavy ($\sim$ GUT scale) particles and show constraints on the size of corrections to achieve the perturbative unification of gauge couplings.
description: 10 pages, 2 figures, version to appear in MPLA
Supplementary document for Highly sensitive short-range mode resonance sensor with multilayer structured hyperbolic metamaterials - 6229651.pdf
Creators: name: Shen, Jian
name: Li, Zhiqi
name: zhang, yizhuo
name: Guo, Xiaowan
name: Tong, Chenghao
name: chen, xiaoying
name: Li, Chaoyang
name: zeng, yu
Publisher: name: Optica Publishing Group
Year: 2023
Subjects: Uncategorized

description: This supplementary document is an additional derivation of Eq. (19) in the manuscript.
Optoelectronic Performance of TCO on Silicon Heterojunction Rear-Emitter Solar Cells
Creators: name: Cruz, A.
name: Neubert, S.
name: Morales-Vilches, A.B.
name: Erfurt, D.
name: Körner, S.
name: Ruske, F.
name: Stannowski, B.
name: Szyszka, B.
name: Schlatmann, R.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Heterojunction Solar Cells

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 452-455
description: When designing silicon heterojunction (SHJ) solar cells with a rear-emitter (RE) configuration the requirements of the conductivity of the transparent conducting oxide (TCO) at the front side are relaxed due to the contribution of lateral current flow within the silicon wafer. In this study, we analyze two approaches that can be implemented to benefit from this. Firstly, the absorption of the TCO can be reduced by designing a thinner TCO layer than the single-layer anti-reflective optimum. In this case, a second anti-reflecting coating has to be deposited on top of the TCO to minimize reflection losses. Secondly, less conductive and more cost-effective materials can be used without strongly compromising the device’s series resistance Rs and FF and, hence, the cell performance. To quantify the optoelectronic potential of these approaches in detail, we performed a comparative study of three different TCOs: indium tin oxide (ITO), aluminum doped zinc oxide (ZnO:Al), and hydrogenated indium oxide (IO:H) on rear-emitter SHJ solar cells. From simulations and experimental results, we conclude that, as expected, solar cells with IO:H as the front TCO reach the higheest efficiency. However, low-cost and higher resistive materials such as ZnO:Al can be implemented, without having a mayor efficiency penalty making them, moreover, competitive to the mainstream used ITO.
Evidence of Rear Surface Related Degradation in Cz-Si PERC-Type Solar Cells
Creators: name: Herguth, A.
name: Derricks, C.
name: Sperber, D.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Homojunction Solar Cells

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 395-397
description: A degradation phenomenon of unknown origin during an accelerated aging test comprising illuminated
annealing is observed for boron-doped PERC-type solar cells with SiOx/SiNx:H rear surface passivation. By collating
different measurement techniques and simulations, the rear surface passivation is identified as component responsible
for the observed degradation. The observed degradation on solar cell level shows similarities to the degradation of
similar passivation layers in lifetime studies.
Electron Beam Evaporation of Silicon for Poly-Silicon/SiO2 Passivated Contacts
Creators: name: Lossen, J.
name: Hoß, J.
name: Eisert, S.
name: Amkreutz, D.
name: Muske, M.
name: Plentz, J.
name: Andrä, G.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Homojunction Solar Cells

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 418-421
description: We assess the use of electron-beam physical vapor deposition (EB-PVD) for the deposition of silicon layers to be used in doped poly-Si/SiO2 passivated carrier selective contacts. It is shown that the crystallinity of the deposited layer can be tuned by the substrate temperature. Nano crystalline (nc-Si) intrinsic layers deposited at substantially different deposition rates of 25 nm/min and 500 nm/min show similar doping profiles after an ex-situ doping by POCl3 diffusion and similar passivation quality with iVoc > 715 mV for symmetrical lifetime samples on a n-type substrate. Best passivation characteristics with iVoc of 732 mV and J0e of 3 fA/cm2 are achieved for in-situ doped layers with an active phosphorous concentration of [P] = 2*1020cm-3 after annealing. A low sheet resistance of 142 Ω/sq for a 100 nm thick layer make this stack eligible for ready integration into a screen printed solar cell. While layer properties are shown to be similar to those of parallel processed LPCVD layers, the single sided deposition characteristic EB-PVD constitutes a significant advantage for easy integration of the process step into a lean industrial process flow.
Dicaeum geelvinkianum subsp. centrale Rand 1941
Creators: name: Pachycephalidae
name: Aegithalidae
name: Remizidae
name: Paridae
name: Sittidae
name: Neosittidae
name: Certhiidae
name: Rhabdornithidae
name: Climacteridae
name: Dicaeidae
name: Pardalotidae
name: Nectariniidae, And
name: Lecroy, Mary
Publisher: name: Zenodo
Year: 2010
Subjects: Biodiversity
Taxonomy
Animalia
Chordata
Aves
Passeriformes
Dicaeidae
Dicaeum

description: Dicaeum geelvinkianum centrale Rand Dicaeum geelvinkianum centrale Rand, 1941: 15 (Balim River, 1600 meters, Netherland [sic] New Guinea). Now Dicaeum geelvinkianum centrale Rand, 1941. See Salomonsen, 1960c: 28, and Cheke and Mann, 2008b: 383–384. HOLOTYPE: AMNH 306379, adult male, collected on the Baliem (5 Balim) River, 1600 m, 04.25S, 138.59E (USBGN, 1982), Papua Province (5 Netherlands New Guinea), Indonesia, on 16 December 1938, by Richard Archbold, Austin L. Rand, and W.B. Richardson on the 1938–1939 Archbold Expedition to New Guinea (no. 8761). COMMENTS: The AMNH number of the holotype was given in the original description. Rand did not list his type series but gave measurements of eight males and seven females. Paratypes, all collected in December 1938 at the type locality, are: males, AMNH 343126–343132, females, AMNH 343133– AMNH 343139. AMNH 343134 was sent to MZB in May 1957. The 1938–1939 Archbold Expedition was a joint expedition with the Netherlands East Indies government and was known as the Indisch-Amerikaansche Expeditie. For a summary of the expedition, see Archbold et al. (1942); and for an account of birds collected, see Rand (1942b).
description: Published as part of Pachycephalidae, Aegithalidae, Remizidae, Paridae, Sittidae, Neosittidae, Certhiidae, Rhabdornithidae, Climacteridae, Dicaeidae, Pardalotidae, Nectariniidae, And & Lecroy, Mary, 2010, Type Specimens Of Birds In The American Museum Of Natural History Part 8. Passeriformes:, pp. 1-178 in Bulletin of the American Museum of Natural History 2010 (333) on page 111
description: {"references": ["Rand, A. L. 1941. Results of the Archbold Expeditions. No. 32. New and interesting birds from New Guinea. American Museum Novitates 1102: 1 - 15.", "Salomonsen, F. 1960 c. Notes on flowerpeckers (Aves, Dicaeidae). 3. The species group Dicaeum concolor and the superspecies Dicaeum erythrothorax. American Museum Novitates 2016: 1 - 36.", "Cheke, R. A., and C. F. Mann. 2008 b. Family Dicaeidae (flowerpeckers). In J. del Hoyo, A. Elliott, and D. Christie (editors), Handbook of birds of the world, volume 13: 350 - 389. Barcelona: Lynx Edicions, 880 pp., 60 pls., 536 photographs.", "Archbold, R., A. L. Rand, and L. J. Brass. 1942. Results of the Archbold Expeditions. No. 41. Summary of the 1938 - 1939 New Guinea Expedition. Bulletin of the American Museum of Natural History 79 (3): 197 - 288, 35 pls., 3 maps.", "Rand, A. L. 1942 b. Results of the Archbold Expeditions. No. 43. Birds of the 1938 - 1939 New Guinea Expedition. Bulletin of the American Museum of Natural History 79 (7): 425 - 516."]}
Industrially Feasible PERC Cells on Diamond Wire Sawing Multi-Crystalline Silicon Wafers Textured by RIE towards 21.62% Efficiency
Creators: name: Ye, Q.
name: Wang, W.
name: Dong, J.
name: Wei, W.
name: Yang, Y.
name: Cai, W.
name: Sheng, J.
name: Zhang, C.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Manufacturing & Production of Si Cells

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 401-405
description: Cost reduction and cell efficiency improvement are the two keys to improving PV production processes. Diamond wire sawing (DWS) can significantly reduce the wafer processing cost and is gaining more market shares in multi-crystalline silicon (mc-Si) with advancements in texturing. Reaction ion etching (RIE) technology has been successfully applied to realize effective surface texturing in DWS mc-Si wafer regardless of grain orientations, with minimal chemical waste. Meanwhile, passivated emitter and rear cells (PERCs) and multi-busbar (MBB) are expected to be the mainstream cell technology with the largest gain in market share over the next few years, due to the high efficiency potential and compatibility with existing p-type materials and production lines. Combining the low cost material of DWS mc-Si with high efficiency structure of PERC with MBB, the final cell efficiency reached average of 21.29% with a batch size of 800 wafers and 21.62% for the best cell. Using 21% cells, the module average power reached 304W, and the cell to module (CTM) ratio reached 98.2%. It must be noted that the cell cost (per-watt) prepared by this route is actually decreased compared to the conventional technology of acidic texturing of DWS wafer with additives.
«Я‑концепция» как фактор самоактуализации и профессионального становления курсантов образовательных организаций МВД России
Creators: name: Михайлова Тамара Николаевна
Publisher: name: Психопедагогика в правоохранительных органах
Year: 2020
Subjects: профессиональное становление; самопознание; саморазвитие; рефлексия; рефлексивность; «Я‑концепция»; самоактуализация; педагогические условия

description: Введение. В системе высшего образования все более актуальной становится востребованность на психолого-педагогические средства воспитания и обучения в процессе формирования необходимых компетенций. Такой подход связан как с потребностью современного общества всесторонне использовать потенциал личности, так и с потребностью личности реализовать себя в различных сферах жизнедеятельности. В условиях глобализации мировых проблем особенно важен процесс профессионального становления и самореализации для стражей правопорядка, к каковым относятся сотрудники органов внутренних дел России. Цель — рассмотреть и проанализировать процесс становления личности курсанта и выявить педагогический потенциал «Я‑концепции» как фактора самоактуализации, способствующей проявлению и развитию индивидуальных способностей курсантов для формирования необходимых компетенций и профессионального становления их личности. Материалы и методы. Диагностическим инструментарием выступили комплекс психодиагностических методик «Кто Я?» и самоактуализационный тест «Самоал». Использовались педагогическое наблюдение, анкетирование и тестирование. Приняли участие 129 курсантов Восточно-Сибирского института МВД России. Результаты и обсуждение. Курсанты обладают возможностями к самопознанию, саморазвитию, формированию адекватной «Я‑концепции» и самоактуализации на уровне, соответствующем уровню имеющихся у них способностей. Выводы. Процессы самопознания, саморазвития, реализация «Я‑концепции» и теории самоактуализации в рамках профессиональной подготовки курсантов образовательных организаций МВД России имеют огромный педагогический потенциал и могут способствовать проявлению и развитию способностей курсантов, которые в целом окажут серьезное влияние на профессиональное становление их личности.
Excited hadrons and the analytical structure of bound-state interaction kernels
Creators: name: El-Bennich, Bruno
name: Krein, Gastão
name: Rojas, Eduardo
name: Serna, Fernando E.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Nuclear Theory (nucl-th)
subject: High Energy Physics - Lattice (hep-lat)
subject: High Energy Physics - Phenomenology (hep-ph)
subject: Nuclear Experiment (nucl-ex)
subject: FOS: Physical sciences

description: We highlight Hermiticity issues in bound-state equations whose kernels are subject to a highly asymmetric mass and momentum distribution and whose eigenvalue spectrum becomes complex for radially excited states. We trace back the presence of imaginary components in the eigenvalues and wave functions to truncation artifacts and suggest how they can be eliminated in the case of charmed mesons. The solutions of the gap equation in the complex plane, which play a crucial role in the analytic structure of the Bethe-Salpeter kernel, are discussed for several interaction models and qualitatively and quantitatively compared to analytic continuations by means of complex-conjugate pole models fitted to real solutions.
description: Proceeding of the ECT* workshop "Nucleon Resonances From Photoproduction to High Photon Virtualities", talk given by B.E.; 8 pages, 2 figures with 6 graphs
Development of p-Cz PERC Solar Cells Approaching 23% Efficiency for Gigawatt-Level Production
Creators: name: Lee, B.G.
name: Höger, I.
name: Ballmann, T.
name: Kauert, M.
name: Laube, S.
name: Neuber, M.
name: Geißler, S.
name: Rudolph, T.
name: Duncker, K.
name: Lantzsch, R.
name: Bartzsch, M.
name: Fertig, F.
name: Hubert, A.
name: Köhler, M.
name: Bakowskie, R.
name: Thormann, S.
name: Schulz, S.
name: Schaper, M.
name: Müller, J.W.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Manufacturing & Production of Si Cells

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 398-400
description: Hanwha Q CELLS has developed high-efficiency PERC silicon solar cells with a selective emitter, achieving an efficiency of 22.7% for a 6-busbar cell, with open-circuit voltage above 684 mV. The selective-emitter cells are fabricated using industrially-proven processes, including conventional screen-printing, on B-doped, p-Cz silicon wafers. This advance builds on our Q.ANTUM technology, which combines leading efficiencies with a lean fabrication sequence and proven stability against light- (and elevated-temperature) induced degradation. Q CELLS currently produces an annualized 3 GW of Q.ANTUM cells on p-Cz wafers. In mass production, the efficiency of our 6-busbar cells now averages 22.15%. This enables high power ratings up to 395 W, for modules with 144 half-cells. With the results presented here, we demonstrate the capability of our Q.ANTUM technology to continue increasing the cell efficiency to 23% and beyond, within the next couple of years.
Unitarity and microscopic acausality in a nonlocal theory
Creators: name: Carone, Christopher D.
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Theory (hep-th)
subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: We consider unitarity and causality in a higher-derivative theory of infinite order, where propagators fall off more quickly in the ultraviolet due to the presence of a transcendental entire function of the momentum. Like Lee-Wick theories, these field theories might provide new avenues for addressing the hierarchy problem; unlike Lee-Wick theories, tree-level propagators do not have additional poles corresponding to unobserved particles with unusual properties. We consider microscopic acausality in these nonlocal theories. The acausal ordering of production and decay vertices for ordinary resonant particles may provide a phenomenologically distinct signature for these models.
description: 26 pages LaTeX, 4 eps figures (latest version: discussion added)
Production Compatible Remedy Against LeTID in High-Performance Multicrystalline Silicon Solar Cells
Creators: name: Bredemeier, D.
name: Walter, D.C.
name: Pernau, T.
name: Romer, O.
name: Schmidt, J.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Manufacturing & Production of Si Cells

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 406-409
description: We examine the ‘LeTID’ (Light and elevated Temperature Induced Degradation) effect and the subsequent
regeneration in high-performance multicrystalline silicon (mc-Si). We treat lifetime samples and PERC solar cells
with a production-compatible inline regeneration furnace (c.REG) from centrotherm international AG and
demonstrate that this industrial-type regeneration treatment is capable of effectively suppressing LeTID. On lifetime
samples, we observe an increase in the lifetime by one order of magnitude compared to the untreated and fully
degraded samples. On finished industrial-type PERC solar cells, the c.REG treatment results in a gain of 6 to 14 mV
in the open-circuit voltage at the point of maximum degradation compared to untreated reference solar cells. This
compares to a relative gain in conversion efficiency of up to 6.8%.
Estimating Non-Simplified Vine Copulas Using Penalized Splines
Creators: name: Schellhase, Christian
name: Spanhel, Fabian
Publisher: name: arXiv
Year: 2016
Subjects: subject: Methodology (stat.ME)
subject: FOS: Computer and information sciences

description: Vine copulas (or pair-copula constructions) have become an important tool for high-dimensional dependence modeling. Typically, so called simplified vine copula models are estimated where bivariate conditional copulas are approximated by bivariate unconditional copulas. We present the first non-parametric estimator of a non-simplified vine copula that allows for varying conditional copulas using penalized hierarchical B-splines. Throughout the vine copula, we test for the simplifying assumption in each edge, establishing a data-driven non-simplified vine copula estimator. To overcome the curse of dimensionality, we approximate conditional copulas with more than one conditioning argument by a conditional copula with the first principal component as conditioning argument. An extensive simulation study is conducted, showing a substantial improvement in the out-of-sample Kullback-Leibler divergence if the null hypothesis of a simplified vine copula can be rejected. We apply our method to the famous uranium data and present a classification of an eye state data set, demonstrating the potential benefit that can be achieved when conditional copulas are modeled.
Dicaeum geelvinkianum subsp. simillimum Hartert
Creators: name: Pachycephalidae
name: Aegithalidae
name: Remizidae
name: Paridae
name: Sittidae
name: Neosittidae
name: Certhiidae
name: Rhabdornithidae
name: Climacteridae
name: Dicaeidae
name: Pardalotidae
name: Nectariniidae, And
name: Lecroy, Mary
Publisher: name: Zenodo
Year: 2010
Subjects: Biodiversity
Taxonomy
Animalia
Chordata
Aves
Passeriformes
Dicaeidae
Dicaeum

description: Dicaeum geelvinkianum simillimum Hartert Dicaeum geelvinkianum simillimum Hartert, 1930b: 51 (Hollandia). Now Dicaeum geelvinkianum diversum Rothschild and Hartert, 1903. See Salomonsen, 1960c: 28, and Cheke and Mann, 2008b: 383–384. HOLOTYPE: AMNH 698106, adult male, collected at Jayapura (5 Hollandia), 03.00S, 139.30E (USBGN, 1982), Papua Province, Indonesia, on 1 August 1928, by Ernst Mayr (no. 1690). From the Rothschild Collection. COMMENTS: Hartert gave Mayr’s unique field number of the holotype in the original description, the only specimen he collected. There was one paratype: AMNH 698107, [male], collected near Humboldt Bay by J.M. Dumas; this specimen is also a paratype of D. g. diversum, above. For more information on Mayr’s expedition, see Hartert (1930a: 18–19) and Mayr (1930: 20–26).
description: Published as part of Pachycephalidae, Aegithalidae, Remizidae, Paridae, Sittidae, Neosittidae, Certhiidae, Rhabdornithidae, Climacteridae, Dicaeidae, Pardalotidae, Nectariniidae, And & Lecroy, Mary, 2010, Type Specimens Of Birds In The American Museum Of Natural History Part 8. Passeriformes:, pp. 1-178 in Bulletin of the American Museum of Natural History 2010 (333) on page 112
description: {"references": ["Hartert, E. 1930 b. III. List of the birds collected by Ernst Mayr. Novitates Zoologicae 36: 27 - 128.", "Salomonsen, F. 1960 c. Notes on flowerpeckers (Aves, Dicaeidae). 3. The species group Dicaeum concolor and the superspecies Dicaeum erythrothorax. American Museum Novitates 2016: 1 - 36.", "Cheke, R. A., and C. F. Mann. 2008 b. Family Dicaeidae (flowerpeckers). In J. del Hoyo, A. Elliott, and D. Christie (editors), Handbook of birds of the world, volume 13: 350 - 389. Barcelona: Lynx Edicions, 880 pp., 60 pls., 536 photographs.", "Hartert, E. 1930 a. I. On a collection of birds made by Dr. Ernst Mayr in northern Dutch New Guinea. Novitates Zoologicae 36: 18 - 19.", "Mayr, E. 1930. My Dutch New Guinea expedition, 1928. Novitates Zoologicae 36: 20 - 26."]}
Métodos de ensino e aprendizagem ativa na formação do técnico de enfermagem: oficina de capacitação
Creators: name: Fioramonte, Gabriel Luiz Nascimento
name: Marin, Maria Jose Sanches
name: Pinto, Adriana Avanzi Marques
Publisher: name: Zenodo
Year: 2023
Subjects: Aprendizagem
Metodologias ativas de ensino aprendizagem
Educação em saúde
Ensino

description: Esta proposta de Oficina de Capacitação sobre Métodos de Ensino e Aprendizado Ativa na Formação do Técnico de Enfermagem foi produzida como base os resultados da pesquisa intitulada “Métodos de ensino e aprendizagem na formação do técnico de enfermagem: percepção do egresso”, realizada em contexto de dissertação apresentada ao Programa de Mestrado Profissional “Ensino em Saúde”, da Faculdade de Medicina de Marília, que foi desenvolvida a partir de entrevistas com egressos de um curso técnico de enfermagem de uma escola localizada no interior do estado de São Paulo. Foi possível observar que há um predomínio do método tradicional de ensino que se expressa pelo uso de apostilas preparadas pelo próprio professor, o uso de lousa e explicações repetidas, que levam o estudante à memorização do conteúdo apenas, e a realização de aulas expositivas, o que limita a possibilidade do estudante de conhecer novas formas de pensar, agir e aprender sobre determinada temática. Entretanto, os participantes reconhecem que existem iniciativas de implementação de estratégias ativas atualmente, bem como valorizam a importância de avançar no incentivo à proatividade do estudante e à sua aproximação com a prática. Propõe-se a capacitação de docentes envolvidos no ensino técnico de enfermagem em nível médio por meio de uma Oficina, na qual serão apresentadas diferentes metodologias ativas de aprendizagem que podem ser aplicadas nesta modalidade de ensino, além de propostas para sua operacionalização. Esperamos que possibilite novos aprendizados e fortaleça o trabalho docente com métodos ativos no ensino técnico, contribuindo para uma aprendizagem significativa na formação destes profissionais da saúde.
description: O presente trabalho foi realizado com apoio da Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - Brasil (CAPES) - Código de Financiamento 001, e no contexto de Mestrado Profissional "Ensino em Saúde" da Faculdade de Medicina de Marília (Famema), aos quais agradecemos.
Gruff Ultrafilters
Creators: name: Fernández-Bretón, David
name: Hrušák, Michael
Publisher: name: arXiv
Year: 2016
Subjects: subject: Logic (math.LO)
subject: General Topology (math.GN)
subject: FOS: Mathematics
subject: 03E75 (Primary), 54A35, 03E35, 03E17, 54F05 (Secondary)

description: We investigate the question of whether $\mathbb Q$ carries an ultrafilter generated by perfect sets (such ultrafilters were called gruff ultrafilters by van Douwen). We prove that one can (consistently) obtain an affirmative answer to this question in three different ways: by assuming a certain parametrized diamond principle, from the cardinal invariant equality $\mathfrak d=\mathfrak c$, and in the Random real model. [Edit: replace "the Randor real model" with "the model obtained by adding $ω_1$ Cohen reals to a model of $\mathsf{CH}$, and subsequently forcing with the Random algebra"; this is clarified in the corrigendum attached at the end of the paper.]
description: 12 pages + 1 extra page at the end with a corrigendum concerning Theorems 4.2 and 4.3, please refer to this corrigendum before citing said theorems
ALMA Resolves the Nuclear Disks of Arp 220
Creators: name: Scoville, Nick
name: Murchikova, Lena
name: Walter, Fabian
name: Vlahakis, Catherine
name: Koda, Jin
name: Bout, Paul Vanden
name: Barnes, Joshua
name: Hernquist, Lars
name: Sheth, Kartik
name: Yun, Min
name: Sanders, David
name: Armus, Lee
name: Cox, Pierre
name: Thompson, Todd
name: Robertson, Brant
name: Zschaechner, Laura
name: Tacconi, Linda
name: Torrey, Paul
name: Hayward, Christopher C.
name: Genzel, Reinhard
name: Hopkins, Phil
name: van der Werf, Paul
name: Decarli, Roberto
Publisher: name: arXiv
Year: 2016
Subjects: subject: Astrophysics of Galaxies (astro-ph.GA)
subject: FOS: Physical sciences

description: We present 90 mas (37 pc) resolution ALMA imaging of Arp 220 in the CO (1-0) line and continuum at $λ= 2.6$ mm. The internal gas distribution and kinematics of both galactic nuclei are well-resolved for the first time. In the West nucleus, the major gas and dust emission extends out to 0.2\arcsec radius (74 pc); the central resolution element shows a strong peak in the dust emission but a factor 3 dip in the CO line emission. In this nucleus, the dust is apparently optically thick ($τ_{\rm 2.6mm} \sim1$) at $λ= 2.6$ mm with a dust brightness temperature $\sim147$ K. The column of ISM at this nucleus is $\rm N_{H2} \geq 2\times10^{26}$ cm$^{-2}$, corresponding to $\sim$900 gr cm$^{-2}$. The East nucleus is more elongated with radial extent 0.3\arcsec or $\sim111$ pc. The derived kinematics of the nuclear disks provide a good fit to the line profiles, yielding the emissivity distributions, the rotation curves and velocity dispersions. In the West nucleus, there is evidence of a central Keplerian component requiring a central mass of $8\times10^8$ \msun. The intrinsic widths of the emission lines are $Δ\rm v (FWHM)$ = 250 (West) and 120 (East) \kms. Given the very short dissipation timescales for turbulence ($\lesssim10^5$ yrs), we suggest that the line widths may be due to semi-coherent motions within the nuclear disks. The symmetry of the nuclear disk structures is impressive -- implying the merger timescale is significantly longer than the rotation period of the disks.
description: ApJ in press
Detection of myelin autoantibodies: evaluation of an assay system for diagnosis of multiple sclerosis in differentiation from other central nervous system diseases
Creators: name: Langkamp, Markus
name: Hörnig, Stephanie C.
name: Hörnig, Joachim B.
name: Kirschner, Marion
name: Pridzun, Lutz
name: Kornhuber, Malte E.
Publisher: name: Kooperation de Gruyter
Year: 2009

description: Background: Multiple sclerosis (MS) is a frequent and often severe autoimmune disease of the central nervous system. We describe a newly developed enzyme-linked immunosorbent assay (ELISA)-based test system for the assessment of neuronal autoantibodies in serum and cerebrospinal fluid (CSF). This tool could help define autoimmune status and thus be a potential means of therapeutic surveillance. Methods: We used an assay system (ELISA, E100, Mediagnost) based on purified bovine antigens [myelin-oligodendrocyte glycoprotein (MOG), myelin basic protein (MBP), myelin-associated glycoprotein (MAG), proteolipid protein (PLP) and alpha-B-crystalline (CRY)] antibodies for the measurement of specific immunoglobulin G (IgG) and immunoglobulin M (IgM) antibodies. Assay characteristics and preliminary validation were conducted by measurement of serum and CSF samples from 41 MS patients and 128 patients with other neurological diseases (OND). Results: We measured the inter- (17.8/10.1%) and intra-assay variability (5.5/6.7%); linearity (1:250– 1:16,000), and specificity of IgG and IgM. We demonstrate that by the results of this test system MS patients can be differentiated from patients with OND. Conclusions: The ELISA kit we evaluated is suitable for the measurement of neuronal autoantibodies. The initial validation demonstrates its potential use in the differential diagnosis of central neuronal system diseases. Clin Chem Lab Med 2009;47:1395–400.
Dicaeum mackloti subsp. romae Hartert
Creators: name: Pachycephalidae
name: Aegithalidae
name: Remizidae
name: Paridae
name: Sittidae
name: Neosittidae
name: Certhiidae
name: Rhabdornithidae
name: Climacteridae
name: Dicaeidae
name: Pardalotidae
name: Nectariniidae, And
name: Lecroy, Mary
Publisher: name: Zenodo
Year: 2010
Subjects: Biodiversity
Taxonomy
Animalia
Chordata
Aves
Passeriformes
Dicaeidae
Dicaeum

description: Dicaeum mackloti romae Hartert Dicaeum mackloti romae Hartert, 1906a: 300 (Roma). Now Dicaeum maugei maugei Lesson, 1830. See Salomonsen, 1961a: 5, White and Bruce, 1986: 409–410, and Cheke and Mann, 2008b: 385. HOLOTYPE: AMNH 697813, adult male, collected on Romang (5 Roma) Island, 07.35S, 127.26E (White and Bruce, 1986: 491), Lesser Sunda Islands, Indonesia, on 10 August 1902, by Heinrich Kühn (no. 5399). From the Rothschild Collection. COMMENTS: Hartert cited Kühn’s unique field number of the holotype of romae in the original description, but did not indicate the size of his type series. Ten specimens in addition to the holotype, collected by Kühn on Romang in August 1902, came to AMNH with the Rothschild Collection. These paratypes are: males, AMNH 697808–697812; immature male, AMNH 697814; females, AMNH 697815, 697816; unsexed [imature males], AMNH 697817, 697818. AMNH 295149, collected by Kühn on Romang in August 1902, was purchased by Leonard C. Sanford for AMNH from the dealer W.F.H. Rosenberg; there is no indication that it had been part of the Rothschild Collection, and it is not considered a paratype.
description: Published as part of Pachycephalidae, Aegithalidae, Remizidae, Paridae, Sittidae, Neosittidae, Certhiidae, Rhabdornithidae, Climacteridae, Dicaeidae, Pardalotidae, Nectariniidae, And & Lecroy, Mary, 2010, Type Specimens Of Birds In The American Museum Of Natural History Part 8. Passeriformes:, pp. 1-178 in Bulletin of the American Museum of Natural History 2010 (333) on page 113
description: {"references": ["Hartert, E. 1906 a. On the birds of the island of Babber. Novitates Zoologicae 13: 288 - 302.", "Salomonsen, F. 1961 a. Notes on flowerpeckers (Aves, Dicaeidae). 4. Dicaeum igniferum and its derivatives. American Museum Novitates 2057: 1 - 35.", "White, C. M. N., and M. D. Bruce. 1986. The birds of Wallacea. BOU Check-list no. 7. London: British Ornithologists' Union, 524 pp.", "Cheke, R. A., and C. F. Mann. 2008 b. Family Dicaeidae (flowerpeckers). In J. del Hoyo, A. Elliott, and D. Christie (editors), Handbook of birds of the world, volume 13: 350 - 389. Barcelona: Lynx Edicions, 880 pp., 60 pls., 536 photographs."]}
Kinetics of the Degradation and Regeneration of p-Type Multicrystalline Silicon under Dark Anneal
Creators: name: Vargas Castrillon, C.
name: Coletti, G.
name: Payne, D.
name: Chan, C.
name: Hameiri, Z.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 346-349
description: In the last few years, it has been found that solar cells made using p-type multicrystalline silicon (mc-Si) wafers degrade under illumination at elevated temperatures. This degradation is commonly known as light- and elevated temperature-induced degradation (LeTID) or carrier-induced degradation (CID). CID is the main challenge for the introduction of mc-Si passivated emitter and rear cells (PERC) in mass production. Previous models of the CID kinetics are based on the presence of two defects (fast and slow), neglecting the simultaneous regeneration that may occur during the degradation. Recently, it has been reported that similar degradation can be observed under anneal at moderate temperatures, even without illumination. In this work, we developed and successfully validated a new model based on the presence of only one defect and on the simultaneous degradation and regeneration processes. The model is much simpler than the current available in the literature. We use this model to investigate the impact of thermal treatment in the dark on p-type mc-Si wafers. We find that high temperatures lead to faster degradation and regeneration rates, while the degradation extent is larger at low temperatures. The activation energies of the degradation and regeneration processes are obtained from the proposed model and found to be 1.08 ± 0.05 eV and 1.11 ± 0.04 eV, respectively. Interestingly, at the end of the dark anneal process, the samples treated at high temperatures show improvement of ~40% in their effective lifetimes.
Occurrence and Damage and Pathogene of Potato Early Blight in Winter in Yunnan Province, China
Creators: name: ZHANG Zhenhua
name: XIONG Shen
name: ZHANG Li
name: ZHANG Baoju
name: PU Jin
name: TU Min
name: ZHANG Jianbo
name: YU Decai
name: ZHANG Zhenhua
name: XIONG Shen
name: ZHANG Li
name: ZHANG Baoju
name: PU Jin
name: TU Min
name: ZHANG Jianbo
name: YU Decai
Publisher: name: Unknown
Year: 2022
Subjects: subject: Agribusiness
subject: Alternaria， Potato early blight， Morphological characteristics， Pathogenicity

description: [Objectives] The paper was to understand the species and pathogenicity of the pathogen causing potato early blight in winter. [Methods] The occurrence of potato early blight was investigated in 5 winter potato growing areas in Yunnan Province. The disease samples were collected from two locations (Zhutang Village and Zhanai Village, Pu’er City) where the occurrence of early blight was severe. The pathogen was isolated and purified in laboratory and identified by morphological characteristics and phylogenetic analysis of ITS gene sequence. And it was further verified via re-inoculation by Koch’s rules. The growth characteristics and pathogenicity of isolates in different seasons were analyzed with 4 strains of Alternaria isolated in spring (EYZ, EYAX, TA1 and TAC) as controls. [Results] Early blight occurred in varying degrees in the 5 winter potato growing areas, and the incidence of early blight was up to 100% in some plots in Lancang County, Pu’er City. A total of 35 strains of Alternaria were isolated from plots with high incidence, which were divided into two types according to colony morphology. The first type was round colonies with smooth edges and gray white fronts, and the second type was round colonies with rough edges and gray black fronts. Three strains LC1, LC2, LC3 of the first type and two strains ZT3 and ZT8 of the second type were selected and identified as Alternaria alternata through morphological and molecular identification. Re-inoculation test further confirmed that the pathogen was A. alternata. Meantime, it was found that the growth rate of colonies isolated in winter was relatively slow, and there was no significant difference between the pathogenicity of LC1 and TA1, but the pathogenicity of strains isolated in winter was generally higher than that isolated in spring. [Conclusions] It is confirmed that the pathogen causing potato early blight in winter is A. alternata in Yunnan Province. The results will lay a foundation for the research of pathogenesis, occurrence regularity and disease control of A. alternata in winter potato.
Muon g-2 through a flavor structure on soft SUSY terms
Creators: name: Flores-Baez, F. V.
name: Gomez-Bock, M.
name: Mondragon, M.
Publisher: name: arXiv
Year: 2015
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: In this work we analyze the possibility to explain the muon anomalous magnetic moment discrepancy within theory and experiment through lepton flavor violation processes. We propose a flavor extended MSSM by considering a hierarchical family structure for the trilinear scalar Soft-Supersymmetric terms of the Lagranagian, present at the SUSY breaking scale. We obtain analytical results for the rotation mass matrix, with the consequence of having non-universal slepton masses and the possibility of leptonic flavour mixing. The one-loop supersymmetric contributions to the leptonic flavour violating process $τ\to μγ$ are calculated in the physical basis, with slepton flavour mixed states, instead of using the well known Mass Insertion Method. We present the regions in parameter space where the muon g-2 problem is either entirely solved or partially reduced through the contribution of these flavor violating processes.
description: 21 pages, 7 figures. Changes on version 3: In order to obtain the complete result for muon g-2 in the limit of non-flavor violation we added the terms given in the appendix. We redid the graphics and numerical analysis including these changes. We also corrected some typos and changed the order of figures
Large Area Monofacial Screen-Printed Rear-Emitter nPERT Cells Approaching 23% Efficiency
Creators: name: Tous, L.
name: Chen, J.
name: Choulat, P.
name: Singh, S.
name: Van Der Heide, A.S.H.
name: Aleman, M.
name: Kuzma-Filipek, I.
name: John, J.
name: Duerinckx, F.
name: Szlufcik, J.
Publisher: name: WIP
Year: 2018
Subjects: Silicon Cells
Homojunction Solar Cells

description: 35th European Photovoltaic Solar Energy Conference and Exhibition; 354-358
description: In this paper, we present a simple processing sequence to fabricate large area (244.3 cm2) n-type
Czochralski-grown (Cz) monofacial screen-printed rear-emitter Passivated Emitter, Rear Totally diffused (nPERT)
cells that can be implemented in production as an upgrade to conventional p-type Cz Passivated Emitter Rear Cell (p-
Cz PERC) manufacturing. We use conventional POCl3 and BBr3 tube diffusions, selective n++ laser doping from
phosphorous silicate glass (PSG), atomic layer deposited (ALD) Al2O3 emitter passivation, and front and rear screenprinting
metallization using commercially available pastes and conventional calendered mesh screens. In a first
experiment optimizing rear emitter contact pitch, we achieve average cell energy conversion efficiencies of 22.6±0.1%
(internal measurement). In a second experiment implementing fine line double printing (FLDP) and double
antireflective coating (DARC), we improve average conversion efficiencies to 22.8±0.1% (internal measurement) with
the champion cell measured at 23.03% (externally confirmed). Finally, we identify main loss mechanisms using Free
Energy Loss Analysis (FELA) and perform Quokka2D simulations to define a feasible roadmap towards >24%
efficiencies.