title: ÐÐµÑÐºÐ¾Ð½ÑÐ°ÐºÑÐ½Ð¾Ðµ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÑ Ð¿Ð»ÐµÐ½Ð¾Ðº n-GaN
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Contactless method of determination ofÂ n-GaN epitaxial films parameters
Creators: name: ÐÐ¾ÑÑÑÐ¾Ð¼Ð¸Ð½, ÐÐ¸ÐºÐ¸ÑÐ°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: Ð½ÐµÑÐ°Ð·ÑÑÑÐ°ÑÑÐ¸Ð¹ ÐºÐ¾Ð½ÑÑÐ¾Ð»Ñ
Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¸
ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÐµ Ð¿Ð»ÑÐ½ÐºÐ¸
Ð½Ð¸ÑÑÐ¸Ð´ Ð³Ð°Ð»Ð»Ð¸Ñ
Ð¼Ð¾Ð´ÐµÐ»Ñ Ð´ÑÑÐ´Ðµ
Ð¾Ð´Ð½Ð¾ÑÐ¾Ð½Ð¾Ð½Ð½ÑÐ¹ ÑÐµÐ·Ð¾Ð½Ð°Ð½Ñ
ÑÐ¿ÐµÐºÑÑÑ Ð¿ÑÐ¾Ð¿ÑÑÐºÐ°Ð½Ð¸Ñ
non-destructive testing
semiconductors
epitaxial gallium nitride films
drude model
single-phonon resonance model
transmission spectra

description: Ð­ÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ ÑÐ¿ÐµÐºÑÑÑ Ð¿ÑÐ¾Ð¿ÑÑÐºÐ°Ð½Ð¸Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÑ Ð¿Ð»ÐµÐ½Ð¾Ðº Ð½Ð¸ÑÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½Ð¾Ð¹ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸ÐµÐ¹ Ð¸ Ð¿Ð¾Ð´Ð²Ð¸Ð¶Ð½Ð¾ÑÑÑÑ ÑÐ²Ð¾Ð±Ð¾Ð´Ð½ÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð² Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ Ð¸Ð· ÑÐ°Ð¿ÑÐ¸ÑÐ° Ð² Ð´Ð°Ð»ÑÐ½ÐµÐ¼ Ð¸ ÑÑÐµÐ´Ð½ÐµÐ¼ Ð¸Ð½ÑÑÐ°ÐºÑÐ°ÑÐ½Ð¾Ð¼ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ð°Ñ ÑÐ¿ÐµÐºÑÑÐ°. ÐÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ñ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½ÑÐµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¿Ð¾ÐºÐ°Ð·Ð°ÑÐµÐ»Ñ Ð¿ÑÐµÐ»Ð¾Ð¼Ð»ÐµÐ½Ð¸Ñ Ð¸ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ° ÑÐºÑÑÐ¸Ð½ÐºÑÐ¸Ð¸. Ð¡ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð¼ÐµÑÐ¾Ð´Ð° Ð¼Ð°ÑÑÐ¸Ñ Ð¿ÐµÑÐµÐ½Ð¾ÑÐ° ÑÐ¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ñ ÑÐ¿ÐµÐºÑÑÑ Ð¿ÑÐ¾Ð¿ÑÑÐºÐ°Ð½Ð¸Ñ ÑÐ²Ð¾Ð±Ð¾Ð´Ð½ÑÑ Ð¿Ð»ÐµÐ½Ð¾Ðº GaN, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÑ Ð¿Ð»ÐµÐ½Ð¾Ðº GaN Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ Ð¸Ð· ÑÐ°Ð¿ÑÐ¸ÑÐ°, Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½Ð¾Ð¹ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸ÐµÐ¹ ÑÐ²Ð¾Ð±Ð¾Ð´Ð½ÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð². ÐÑÐ¿Ð¾Ð»ÑÐ·ÑÑ Ð¼ÐµÑÐ¾Ð´ ÐÐµÐ»Ð´ÐµÑÐ°-ÐÐ¸Ð´Ð°, Ð¿ÑÑÐµÐ¼ Ð¿Ð¾Ð´Ð³Ð¾Ð½ÐºÐ¸ ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ¿ÐµÐºÑÑÐ¾Ð² Ð¿Ð¾Ð´ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÐµ, Ð² ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ ÑÐ°Ð±Ð¾ÑÑ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÑ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ð¸ ÑÐ²Ð¾Ð±Ð¾Ð´Ð½ÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð² Ð¸ Ð¸Ñ Ð¿Ð¾Ð´Ð²Ð¸Ð¶Ð½Ð¾ÑÑÐ¸ Ð´Ð»Ñ ÑÑÐµÑ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÑ Ð¿Ð»ÐµÐ½Ð¾Ðº Ð½Ð¸ÑÑÐ¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ Ð½Ð° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ°Ñ Ð¸Ð· ÑÐ°Ð¿ÑÐ¸ÑÐ°. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¾ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð½Ð¾Ð³Ð¾ Ð¼ÐµÑÐ¾Ð´Ð° Ð±ÐµÑÐºÐ¾Ð½ÑÐ°ÐºÑÐ½Ð¾Ð¹ Ð´Ð¸Ð°Ð³Ð½Ð¾ÑÑÐ¸ÐºÐ¸ Ñ Ð´ÑÑÐ³Ð¸Ð¼Ð¸ Ð¼ÐµÑÐ¾Ð´Ð°Ð¼Ð¸.
description: The experimental transmission spectra of epitaxial gallium nitride films with different concentration and mobility of free electrons on a sapphire substrate in the far and mid-infrared spectral ranges have been experimentally studied. The spectral dependences of the refractive index and extinction coefficient have been determined. The transmission spectra of free-standing GaN film as well as GaN epitaxial films on sapphire substrate with different concentrations of free electrons have been modeled using the transfer matrix method. The free electron concentration and mobility for three GaN epitaxial films were determined by fitting the simulated spectra to experimental ones using the Nelder-Mead method. The developed method of contactless diagnostics is compared with other methods.