title: ÐÐ¾Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ðµ ÑÐ¿Ð¸Ð½Ð¾Ð²Ð¾Ð¹ ÑÐµÐ»Ð°ÐºÑÐ°ÑÐ¸Ð¸ Ð½ÐµÑÐ°Ð²Ð½Ð¾Ð²ÐµÑÐ½ÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð² Ð°Ð½ÑÐ¸ÑÐµÑÑÐ¾Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÐ¼ Ð²Ð·Ð°Ð¸Ð¼Ð¾Ð´ÐµÐ¹ÑÑÐ²Ð¸ÐµÐ¼ ÐºÐ»Ð°ÑÑÐµÑÐ¾Ð² ÐºÐ¾Ð±Ð°Ð»ÑÑÐ° Ñ Ð»Ð¾ÐºÐ°Ð»Ð¸Ð·Ð¾Ð²Ð°Ð½Ð½ÑÐ¼Ð¸ Ð´ÑÑÐºÐ°Ð¼Ð¸ Ð² ÑÑÑÑÐºÑÑÑÐµ SiO2(Co)/GaAs
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Suppression of spin relaxation of nonequilibrium electrons by antiferromagnetic interaction of cobalt clusters with localized holes in the SiO2(Co)/GaAs structure
Creators: name: ÐÐ¼ÐµÐ»Ð¸Ð½Ð°, ÐÐ»Ð¸Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ°Ñ Ð¾ÑÐ¸ÐµÐ½ÑÐ°ÑÐ¸Ñ
ÑÑÑÐµÐºÑ Ð¥Ð°Ð½Ð»Ðµ
ÑÐ¿Ð¸Ð½Ð¾Ð²Ð°Ñ ÑÐµÐ»Ð°ÐºÑÐ°ÑÐ¸Ñ
Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð¾Ð²Ð°Ð½Ð½Ð°Ñ Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ
Ð°Ð½ÑÐ¸ÑÐµÑÑÐ¾Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ðµ Ð²Ð·Ð°Ð¸Ð¼Ð¾Ð´ÐµÐ¹ÑÑÐ²Ð¸Ðµ
Ð¼ÐµÑ Ð°Ð½Ð¸Ð·Ð¼ ÐÑÑÐºÐ¾Ð½Ð¾Ð²Ð°-ÐÐµÑÐµÐ»Ñ
Ð¾ptical orientation
Hanle effect
spin relaxation
polarized luminescence
antiferromagnetic interaction
Diakonov-Perel mechanizm

description: ÐÐ±ÑÐµÐºÑÐ¾Ð¼ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÐ²Ð»ÑÐµÑÑÑ Ð´Ð¸Ð½Ð°Ð¼Ð¸ÐºÐ° ÑÐ³Ð»Ð¾Ð²Ð¾Ð³Ð¾ Ð¼Ð¾Ð¼ÐµÐ½ÑÐ° ÑÐ¾ÑÐ¾Ð¸Ð½Ð´ÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÑ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÐµÐ¹ Ð½Ð° Ð¸Ð½ÑÐµÑÑÐµÐ¹ÑÐµ ÑÑÑÑÐºÑÑÑÑ SiO2(Co)/GaAsÐ¸ Ð½Ð° ÑÑÐ¾ÑÐ¾Ð½Ðµ ÑÐ¸ÑÑÐ¾Ð³Ð¾ GaAs Ð¿ÑÐ¸ ÑÐ°Ð·Ð½ÑÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ.
Ð¦ÐµÐ»ÑÑ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾Ð¹ ÑÐ°ÑÑÐ¸ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐµÑÑÑ Ð¸Ð·ÑÑÐµÐ½Ð¸Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÑ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐµÐ¹ Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð°ÑÐ¸Ð¸ Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¾Ñ Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ð³Ð¾ Ð¿Ð¾Ð»Ñ Ð´Ð»Ñ ÑÑÑÑÐºÑÑÑÑ SiO2(Co)/GaAs, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ ÑÑÐ¸Ñ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐµÐ¹ Ñ ÑÑÑÑÐºÑÑÑÐ¾Ð¹SiO2(Cu)/GaAs Ð¿ÑÐ¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐµ 77 Ð. 
Ð Ð¿ÐµÑÐ²Ð¾Ð¹ ÑÐ°ÑÑÐ¸ ÑÐ°Ð±Ð¾ÑÑ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½ Ð¾Ð±Ð·Ð¾Ñ Ð»Ð¸ÑÐµÑÐ°ÑÑÑÑ. Ð Ð¾Ð±Ð·Ð¾ÑÐµ ÑÐ°ÑÑÐ¼Ð¾ÑÑÐµÐ½Ñ ÑÑÑÑÐºÑÑÑÐ° SiO2(Co)/GaAs, Ð¿ÑÐ¾ÑÐµÑÑ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð¾ÑÐ¸ÐµÐ½ÑÐ°ÑÐ¸Ð¸, ÑÑÑÐµÐºÑ Ð¥Ð°Ð½Ð»Ðµ Ð¸ Ð¾Ð¿Ð¸ÑÐ°Ð½Ð¸Ðµ Ð¿ÑÐ¾ÑÐµÑÑÐ° Ð¿Ð¾Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ñ ÑÐ¿Ð¸Ð½Ð¾Ð²Ð¾Ð¹ ÑÐµÐ»Ð°ÐºÑÐ°ÑÐ¸Ð¸ Ð´Ð»Ñ GaAs, Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¼Ð°ÑÐ³Ð°Ð½ÑÐµÐ¼. 
ÐÐ¾ Ð²ÑÐ¾ÑÐ¾Ð¹ ÑÐ°ÑÑÐ¸ ÑÐ°Ð±Ð¾ÑÑ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½Ñ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ð¹ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð°ÑÐ¸Ð¸ Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¾Ñ Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ð³Ð¾ Ð¿Ð¾Ð»Ñ Ð¿ÑÐ¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ 1,5 Ð, 20 Ð, 77 Ð, 300 Ð, Ð¿Ð¾ÑÑÐ¸ÑÐ°Ð½Ñ Ð²ÑÐµÐ¼ÐµÐ½Ð° ÑÐ¿Ð¸Ð½Ð¾Ð²Ð¾Ð¹ ÑÐµÐ»Ð°ÐºÑÐ°ÑÐ¸Ð¸ Ð¸ Ð²ÑÐµÐ¼ÐµÐ½Ð° Ð¶Ð¸Ð·Ð½Ð¸ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÐµÐ¹ Ð´Ð»Ñ ÐºÐ°Ð¶Ð´Ð¾Ð¹ Ð¸Ð· ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ, Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½ Ð°Ð½Ð°Ð»Ð¸Ð· ÑÑÐ¸Ñ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð². ÐÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½Ð¾ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐµÐ¹ Ð¿Ð¾Ð»ÑÑÐ¸Ð·Ð°ÑÐ¸Ð¸ Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ Ð¾Ñ Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ð³Ð¾ Ð¿Ð¾Ð»Ñ Ð´Ð»Ñ ÑÑÑÑÐºÑÑÑSiO2(Co)/GaAs Ð¸ SiO2(Cu)/GaAs Ð¿ÑÐ¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐµ 77 Ð.
description: The object of the study is the dynamics of an angular momentum of photoinduced carriers on the interface of the SiO2(Co)/GaAs structure and on the side of pure GaAs at different temperatures.
The aim of the experimental part of the work is to study the temperature dependences of luminescence polarization on the magnetic field for the SiO2(Co)/GaAs structure, as well as to compare these dependences with the SiO2(Cu)/GaAs structure at 77 K.
In the first part of the work the review of the literature is presented. In the review we consider the structure of SiO2(Co)/GaAs, the optical orientation process, the Hanle effect and the description of spin relaxation suppression process for manganese-doped GaAs.
In the second part of the work we present the results of studies of the dependence of luminescence polarization on the magnetic field at 1,5 K, 20 K, 77 K, 300 K temperatures, we calculated spin relaxation times and carriersâ life times for each temperature, and present an analysis for these results. We present a comparison of the dependence of luminescence polarization on the magnetic field for SiO2(Co)/GaAs and SiO2(Cu)/GaAs structures at 77 K.