title: ÐÐ»Ð°Ð·Ð¼Ð¾Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ Ð½Ð¸ÑÑÐ¸Ð´Ð° Ð¸ Ð¾ÐºÑÐ¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ ÐÐ§Ð ÑÐ°Ð·ÑÑÐ´Ð¾Ð¼ Ð² ÑÐ¼ÐµÑÐ¸ SFâ/Hâ Ð¸ SFâ/Dâ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Plasma-chemical etching of silicon nitride and silicon oxide by RFC discharge in a mixture of SFâ / Hâ and SFâ / Dâ
Creators: name: ÐÑÐ»Ð¸ÐºÐ¾Ð², ÐÐ¸ÑÐ°Ð¸Ð»
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: ÐÐ»ÐµÐ½ÐºÐ¸ ÑÐ¾Ð½ÐºÐ¸Ðµ
ÐÑÐµÐ¼Ð½Ð¸Ð¹, Ð½Ð¸ÑÑÐ¸Ð´Ñ
Ð²ÑÑÐ¾ÐºÐ¾ÑÐ°ÑÑÐ¾ÑÐ½ÑÐ¹ ÐµÐ¼ÐºÐ¾ÑÑÐ½Ð¾Ð¹ ÑÐ°Ð·ÑÑÐ´
Ð¿Ð»Ð°Ð·Ð¼Ð¾Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ°Ñ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ñ
Ð½Ð¸ÑÑÐ¸Ð´ ÐºÑÐµÐ¼Ð½Ð¸Ñ
Ð¾ÐºÑÐ¸Ð´ ÐºÑÐµÐ¼Ð½Ð¸Ñ

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾Ð¼Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð²ÑÑÐ¾ÐºÐ¾ÑÐ°ÑÑÐ¾ÑÐ½Ð¾Ð³Ð¾ ÐµÐ¼ÐºÐ¾ÑÑÐ½Ð¾Ð³Ð¾ (ÐÐ§Ð) ÑÐ°Ð·ÑÑÐ´Ð°, Ð¿ÑÐµÐ´Ð½Ð°Ð·Ð½Ð°ÑÐµÐ½Ð½Ð¾Ð³Ð¾ Ð´Ð»Ñ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÐµÐ½Ð¾Ðº Ð½Ð¸ÑÑÐ¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð¸ Ð¾ÐºÑÐ¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ. ÐÐ°Ð´Ð°ÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐµÑÐ°Ð»Ð¸ÑÑ Ð² ÑÐ¾Ð´Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ: 1. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ¾Ð² Ñ ÑÐµÐ»ÑÑ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÑ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Si3N4 Ð¸ SiO2 Ð¾Ñ Ð½Ð°ÑÐµÐºÐ°Ð½Ð¸Ñ H2 Ð¸ D2 Ð² ÐºÐ°Ð¼ÐµÑÑ 2. ÐÐºÑÐ¸Ð½Ð¾Ð¼ÐµÑÑÐ¸ÑÐµÑÐºÐ¾Ðµ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ðµ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ð¸ Ð°ÑÐ¾Ð¼Ð°ÑÐ½Ð¾Ð³Ð¾ ÑÑÐ¾ÑÐ° Ð² ÐºÐ°Ð¼ÐµÑÐµ ÑÐ°Ð·ÑÑÐ´Ð° 3. ÐÐºÑÐ¸Ð½Ð¾Ð¼ÐµÑÑÐ¸ÑÐµÑÐºÐ¾Ðµ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ðµ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ð¸ ÑÐµÑÑ Ð² ÐºÐ°Ð¼ÐµÑÐµ ÑÐ°Ð·ÑÑÐ´Ð° 4. ÐÐ¾Ð»ÑÑÐµÐ½Ð¸Ðµ ÑÐ¿ÐµÐºÑÑÐ¾Ð², Ð½Ð°Ð±Ð»ÑÐ´Ð°ÐµÐ¼ÑÑ Ð² Ð½Ð°ÑÐ¸Ñ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ¾Ð², ÑÐ°Ð·ÑÑÐ´Ð¾Ð² Ð­ÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾ Ð±ÑÐ»Ð¾ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ ÑÐºÐ¾ÑÐ¾ÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð½Ð¸ÑÑÐ¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð² ÑÐ°Ð·ÑÑÐ´Ðµ Ð½ÐµÐ¼Ð¾Ð½Ð¾ÑÐ¾Ð½Ð½Ð¾ Ð·Ð°Ð²Ð¸ÑÐ¸Ñ Ð¾Ñ Ð¿Ð¾ÑÐ¾ÐºÐ° H2 (Ð¿ÑÐ¸ Ð½ÐµÐ±Ð¾Ð»ÑÑÐ¾Ð¹ Ð´Ð¾Ð±Ð°Ð²ÐºÐµ H2 Ð½Ð°Ð±Ð»ÑÐ´Ð°Ð»ÑÑ Ð¿Ð¸Ðº Ð² ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ð¸) Ð¸ Ð¼Ð¾Ð½Ð¾ÑÐ¾Ð½Ð½Ð¾ ÑÐ½Ð¸Ð¶Ð°ÐµÑÑÑ Ð¿ÑÐ¸ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ð¸ Ð¿Ð¾ÑÐ¾ÐºÐ° D2. ÐÑÐ¸ ÑÑÐ¾Ð¼, ÑÑÑÐµÑÑÐ²ÐµÐ½Ð½ÑÑ ÑÐ°Ð·Ð»Ð¸ÑÐ¸Ð¹ Ð² ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ð¸ Ð¾ÐºÑÐ¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ ÑÐ°Ð·ÑÑÐ´Ð°Ð¼Ð¸ SF6/H2 Ð¸ SF6/D2 Ð¾Ð±Ð½Ð°ÑÑÐ¶ÐµÐ½Ð¾ Ð½Ðµ Ð±ÑÐ»Ð¾. ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° ÐºÐ¾ÑÐ²ÐµÐ½Ð½Ð¾ Ð¿Ð¾Ð´ÑÐ²ÐµÑÐ¶Ð´Ð°ÐµÑ Ð³Ð¸Ð¿Ð¾ÑÐµÐ·Ñ Ð¾ ÑÐ¾Ð»Ð¸ ÐºÐ¾Ð»ÐµÐ±Ð°ÑÐµÐ»ÑÐ½Ð¾ Ð²Ð¾Ð·Ð±ÑÐ¶Ð´ÐµÐ½Ð½ÑÑ Ð¼Ð¾Ð»ÐµÐºÑÐ» ÑÑÐ¾ÑÐ¾Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð² ÑÑÐ°Ð»ÐµÐ½Ð¸Ð¸ Ð½Ð¸ÑÑÐ¸Ð´Ð° ÐºÑÐµÐ¼Ð½Ð¸Ñ
description: This work is devoted to the experimental study of a high-frequency capacitive (RFC) discharge intended for etching thin films of silicon nitride and silicon oxide. Tasks that were solved in the course of the study: 1. Carrying out experiments in order to obtain the dependence of the etching rate of Si3N4 and SiO2 on the leakage of H2 and D2 into the chamber 2. Actinometric measurement of the concentration of atomic fluorine in the discharge chamber 3. Actinometric measurement of sulfur concentration in the discharge chamber 4. Obtaining the spectra observed in our experiments, discharges It was experimentally shown that the etching rate of silicon nitride in the discharge nonmonotonically depends on the H2 flux (with a small addition of H2, a peak in the etching rate was observed) and decreases monotonically with increasing flux D2. At the same time, no significant differences were found in the etching of silicon oxide by SF6/H2 and SF6/D2 discharges. This work indirectly confirms the hypothesis about the role of vibrationally excited hydrogen fluoride molecules in the trawling of silicon nitride.