title: ÐÐ¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¼Ð¾ÑÐ½ÑÑ ÑÐ¼Ð¸ÑÑÐµÑÐ¾Ð² Ð£Ð¤-Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ Ñ Ð¼Ð¾Ð½Ð¾ÑÐ»Ð¾Ð¹Ð½ÑÐ¼Ð¸ Ð¼Ð½Ð¾Ð¶ÐµÑÑÐ²ÐµÐ½Ð½ÑÐ¼Ð¸ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ Ð² ÑÐ¸ÑÑÐµÐ¼Ðµ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð² (AlGa)N, Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÑ Ð¿Ð»Ð°Ð·Ð¼ÐµÐ½Ð½Ð¾-Ð°ÐºÑÐ¸Ð²Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð¹ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð¿ÑÑÐºÐ¾Ð²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸ÐµÐ¹
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Parameter optimization of high-power UV radiation emitters composed of monolayer multiple quantum well heterostructures based on (AlGa)N compound system grown by plasma-assisted molecular beam epitaxy
Creators: name: ÐÐ¸ÐºÐ¾Ð»Ð°ÐµÐ²Ð°, ÐÐ½Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: ÐÐ¸Ð¾Ð´Ñ ÑÐ²ÐµÑÐ¾Ð¸Ð·Ð»ÑÑÐ°ÑÑÐ¸Ðµ
ÐÐ¿ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ°
ÑÐ¾Ð»Ð½ÐµÑÐ½Ð¾-ÑÐ»ÐµÐ¿Ð¾Ð¹ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½
ÑÐ»Ð¾Ð¸ AlGaN
Ð¼Ð¾Ð½Ð¾ÑÐ»Ð¾Ð¹Ð½ÑÐµ Ð¼Ð½Ð¾Ð¶ÐµÑÑÐ²ÐµÐ½Ð½ÑÐµ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¼Ñ
ÑÐ¾ÑÐ¼ÑÐ»Ð° ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ° Ð¿Ð¾Ð³Ð»Ð¾ÑÐµÐ½Ð¸Ñ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ð¼Ð½Ð¾Ð¶ÐµÑÑÐ²ÐµÐ½Ð½ÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼
Ð¿Ð»Ð°Ð·Ð¼ÐµÐ½Ð½Ð¾-Ð°ÐºÑÐ¸Ð²Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð°Ñ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð¿ÑÑÐºÐ¾Ð²Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
solar-blind range
AlGaN-layer
monolayer-scale GaN/AlN multiple quantum wells
formula of the optical absorption coefficient of radiation of multiple quantum wells
plasma assisted molecular beam epitaxy

description: ÐÐ±ÑÐµÐºÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ â Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÑ ÑÐ¼Ð¸ÑÑÐµÑÐ¾Ð² Ð£Ð¤âÐ¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ñ Ð¼Ð¾Ð½Ð¾ÑÐ»Ð¾Ð¹Ð½ÑÐ¼Ð¸ Ð¼Ð½Ð¾Ð¶ÐµÑÑÐ²ÐµÐ½Ð½ÑÐ¼Ð¸ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ N Ã {GaNm/AlNn}. Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â Ð¿Ð¾Ð²ÑÑÐµÐ½Ð¸Ðµ Ð²ÑÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ ÑÐ¼Ð¸ÑÑÐµÑÐ¾Ð² Ð£Ð¤âÐ¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ñ Ð¼Ð¾Ð½Ð¾ÑÐ»Ð¾Ð¹Ð½ÑÐ¼Ð¸ Ð¼Ð½Ð¾Ð¶ÐµÑÑÐ²ÐµÐ½Ð½ÑÐ¼Ð¸ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ N Ã{GaNm/AlNn} Ð·Ð°ÑÑÑÑ Ð´Ð¾ÑÑÐ¸Ð¶ÐµÐ½Ð¸Ñ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² (ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð±Ð°ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð¾ÑÐ², ÐºÐ¾Ð»Ð¸ÑÐµÑÑÐ²Ð° ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼ Ð² Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð¹ (ÑÐ²ÐµÑÐ¾Ð¸Ð·Ð»ÑÑÐ°ÑÑÐµÐ¹ Ð¾Ð±Ð»Ð°ÑÑÐ¸), ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÐ¸). Ð ÑÐ°Ð±Ð¾ÑÐµ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸ÑÑÑ ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ°ÑÑÑÑ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ ÑÐ¼Ð¸ÑÑÐµÑÐ¾Ð² Ð£Ð¤âÐ¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ñ Ð¼Ð¾Ð½Ð¾ÑÐ»Ð¾Ð¹Ð½ÑÐ¼Ð¸ Ð¼Ð½Ð¾Ð¶ÐµÑÑÐ²ÐµÐ½Ð½ÑÐ¼Ð¸ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸ N Ã {GaNm/AlNn}. ÐÐ»Ñ ÑÑÐ¾Ð³Ð¾ Ð±ÑÐ»Ð° Ð²ÑÐ²ÐµÐ´ÐµÐ½Ð° ÑÐ¾ÑÐ¼ÑÐ»Ð° Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ° Ð¿Ð¾Ð³Ð»Ð¾ÑÐµÐ½Ð¸Ñ Ð¼Ð¾Ð½Ð¾ÑÐ»Ð¾Ð¹Ð½ÑÑ Ð¼Ð½Ð¾Ð¶ÐµÑÑÐ²ÐµÐ½Ð½ÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼, ÑÐ°ÑÑÐ¸ÑÐ°Ð½ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¿Ð¾Ð³Ð»Ð¾ÑÐµÐ½Ð¸Ñ Ð¼Ð¾Ð½Ð¾ÑÐ»Ð¾Ð¹Ð½ÑÑ Ð¼Ð½Ð¾Ð¶ÐµÑÑÐ²ÐµÐ½Ð½ÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼, Ð¿ÑÐ¾Ð²ÐµÐ´ÑÐ½ ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ°ÑÑÑÑ Ð´Ð¸ÑÑÑÐ·Ð¸Ð¾Ð½Ð½Ð¾Ð¹ Ð´Ð»Ð¸Ð½Ñ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð² Ð² Ð±Ð°ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð¾ÑÑ AlN, Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¾ ÑÐ¿ÐµÑÐ¸Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ðµ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½Ð¾ - Ð¼Ð°ÑÐµÐ¼Ð°ÑÐ¸ÑÐµÑÐºÐ¾Ðµ Ð¾Ð±ÐµÑÐ¿ÐµÑÐµÐ½Ð¸Ðµ CASINO v.2.5.1.0 Ð±ÑÐ»Ð° Ð¾ÑÐµÐ½ÐµÐ½Ð° ÑÐ¾Ð»ÑÐ¸Ð½Ð° Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð¹ (ÑÐ²ÐµÑÐ¾Ð¸Ð·Ð»ÑÑÐ°ÑÑÐµÐ¹) Ð¾Ð±Ð»Ð°ÑÑÐ¸, Ð¾Ð±ÐµÑÐ¿ÐµÐ¸Ð²Ð°ÑÑÐ°Ñ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½Ð¾Ðµ Ð¿Ð¾Ð³Ð»Ð¾ÑÐµÐ½Ð¸Ðµ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð³Ð¾ Ð¿ÑÑÐºÐ° Ñ ÑÐ½ÐµÑÐ³Ð¸ÐµÐ¹ Ð´Ð¾ 15 ÐºÑÐ. Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ ÑÐ°Ð±Ð¾ÑÑ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½Ñ Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¼ÑÐ»ÑÑÐ¸Ð¼ÐµÐ´Ð¸Ð¹Ð½ÑÑ ÑÑÐµÐ´ÑÑÐ².
description: The subject of the graduate qualification work is heterostructures of UVâemitters with monolayerâscale GaN/ALN multiple quantum wells for high power e-beam pumped. The given work is devoted to to increase the output power of heterostructures of UVâemitters with monolayerâscale GaN/ALN multiple quantum wells by achieving optimal parameters (thickness of barrier layers AlN, number of quantum wells in the active (light-emitting region), thickness of the active region). The graduate qualification work provides a theoretical calculation of optimal parameters of heterostructures of UVâemitters with monolayerâscaleGaN/ALN multiple quantum wells. For this purpose, the formula of the optical absorption coefficient of monolayer multiple quantum wells was derived, the optical absorption coefficient of monolayer multiple quantum wells was calculated, the theoretical calculation of the diffusion length of electrons in barrier layers AlN, was carried out, with specialized software and mathematical software CASINO v.2.5.1.0 the thickness of the active (lightemitting) region was estimated to ensure optimal absorption of an electron beam with an energy of up to 15 keV. The results of the graduate qualification work are presented using multimedia tools.