title: ÐÐ»Ð¸ÑÐ½Ð¸Ðµ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ð¸ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð½Ð° ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÑÑÑÑÐºÑÑÑ Pd-Ð¾ÐºÑÐ¸Ð´-InP
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Effect of hydrogen concentration on the photoelectric properties of Pd-oxide-InP structures
Creators: name: Ð¨Ð°ÑÐ¸Ð¿Ð¾Ð², Ð ÑÑÐ»Ð°Ð½
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ð¹ ÑÐµÐ½ÑÐ¾Ñ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð°
ÑÑÐ½Ð½ÐµÐ»ÑÐ½ÑÐ¹ Ð¼ÐµÑ Ð°Ð½Ð¸Ð·Ð¼ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸
ÑÐ°Ð±Ð¾ÑÐ° Ð²ÑÑ Ð¾Ð´Ð° Ð¿Ð°Ð»Ð»Ð°Ð´Ð¸Ñ
Ð¿ÑÑÐ¼Ð¾Ðµ ÑÐ¼ÐµÑÐµÐ½Ð¸Ðµ
ÑÐ¾ÑÐ¾ÑÐ¾Ðº
photoelectric hydrogen sensor
tunneling conduction mechanism
work function of palladium
forward bias
photocurrent

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ð¸ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð½Ð° ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ Ð¸ ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÑÑÑÑÐºÑÑÑ Pd/Ð¾ÐºÑÐ¸Ð´/InP,Pd/GaAs,Pd/GaPÐ¸ ÑÑÐ°Ð²Ð½Ð¸ÑÐµÐ»ÑÐ½Ð¾Ð¼Ñ Ð°Ð½Ð°Ð»Ð¸Ð·Ñ ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº Ð´Ð°Ð½Ð½ÑÑ ÑÑÑÑÐºÑÑÑ. ÐÐ°Ð´Ð°ÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐµÑÐ°Ð»Ð¸ÑÑ Ð² ÑÐ¾Ð´Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ: 1. Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° ÑÑÐ²ÑÑÐ²Ð¸ÑÐµÐ»ÑÐ½ÑÑ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ¾Ð² Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÑÑÑÐºÑÑÑ Pd/Ð¾ÐºÑÐ¸Ð´/InP,Pd/GaAs,Pd/GaP. 2. ÐÐ·Ð¼ÐµÑÐµÐ½Ð¸Ñ ÐÐÐ¥ ÑÑÑÑÐºÑÑÑ Pd/Ð¾ÐºÑÐ¸Ð´/InP,Pd/GaAs,Pd/GaP Ð² Ð²Ð°ÐºÑÑÐ¼Ðµ Ð¸ Ð² Ð°ÑÐ¼Ð¾ÑÑÐµÑÐµ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð°. 3. ÐÐ·Ð¼ÐµÑÐµÐ½Ð¸Ðµ ÑÐ¾ÑÐ¾ÑÐ¾ÐºÐ° Ð¿ÑÐ¸ Ð¿ÑÑÐ¼Ð¾Ð¼ ÑÐ¼ÐµÑÐµÐ½Ð¸Ð¸ Ð² ÑÑÑÑÐºÑÑÑÐ°Ñ Pd/Ð¾ÐºÑÐ¸Ð´/InP,Pd/GaAs,Pd/GaP. 4. Ð¡ÑÐ°Ð²Ð½Ð¸ÑÐµÐ»ÑÐ½ÑÐ¹ Ð°Ð½Ð°Ð»Ð¸Ð· ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº ÑÑÑÑÐºÑÑÑ Pd/Ð¾ÐºÑÐ¸Ð´/InP,Pd/GaAs,Pd/GaP. ÐÐ·Ð¼ÐµÑÐµÐ½Ð¸Ñ Ð´Ð»Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð½Ð° ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ ÑÑÑÑÐºÑÑÑÑ Pd-Ð¾ÐºÑÐ¸Ð´-InPÐ¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¸ÑÑ Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑ 90-300K. ÐÐ»Ñ Ð°Ð½Ð°Ð»Ð¸Ð·Ð° Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð´Ð°Ð½Ð½ÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð»Ð¾ÑÑ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½Ð¾Ðµ Ð¾Ð±ÐµÑÐ¿ÐµÑÐµÐ½Ð¸Ðµ Origin 2018. ÐÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð²,ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸Ð·ÑÑÑÐ¸Ñ Ð¼ÐµÑÐ°Ð½Ð¸Ð·Ð¼Ñ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ ÑÑÑÑÐºÑÑÑÑ. ÐÐ·Ð¼ÐµÑÐµÐ½Ð¸Ðµ ÑÐ¾ÑÐ¾ÑÐ¾ÐºÐ° ÑÑÑÑÐºÑÑÑ Pd/Ð¾ÐºÑÐ¸Ð´/InP,Pd/GaAs,Pd/GaP Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¾ÑÑ Ð¿ÑÐ¸ Ð¿ÑÑÐ¼Ð¾Ð¼ ÑÐ¼ÐµÑÐµÐ½Ð¸Ð¸. ÐÐ°Ð±Ð»ÑÐ´Ð°Ð»Ð¾ÑÑ Ð½Ð°ÑÑÑÐµÐ½Ð¸Ðµ ÑÐ¾ÑÐ¾ÑÐ¾ÐºÐ° Ð² Ð°ÑÐ¼Ð¾ÑÑÐµÑÐµ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð¸ Ð² Ð²Ð°ÐºÑÑÐ¼Ðµ Ð² ÑÑÑÑÐºÑÑÑÐµ Pd/Ð¾ÐºÑÐ¸Ð´/InP Ð¸ ÑÐ²ÐµÐ»Ð¸ÑÐµÐ½Ð¸Ðµ Ð¿Ð¾ÑÐµÐ½ÑÐ¸Ð°Ð»ÑÐ½Ð¾Ð³Ð¾ Ð±Ð°ÑÑÐµÑÐ° Ð² ÑÑÑÑÐºÑÑÑÐ°Ñ Pd/GaAs,Pd/GaP. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¼Ð¾Ð³ÑÑ Ð±ÑÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ñ Ð² Ð´Ð°Ð»ÑÐ½ÐµÐ¹ÑÐ¸Ñ ÑÐ°Ð±Ð¾ÑÐ°Ñ Ð¿Ð¾ ÑÐ»ÑÑÑÐµÐ½Ð¸Ñ ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº ÑÑÑÑÐºÑÑÑÑ Pd/Ð¾ÐºÑÐ¸Ð´/InP Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð²Ð¾Ð´Ð¾ÑÐ¾Ð´Ð° Ð½Ð° ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ ÑÑÑÑÐºÑÑÑ Pd/GaAs,Pd/GaP Ð¿ÑÐ¸ Ð¿ÑÑÐ¼Ð¾Ð¼ ÑÐ¼ÐµÑÐµÐ½Ð¸Ð¸.
description: This work is devoted to the study of the influence of hydrogen concentration on the electrical and photovoltaic properties of Pd/oxide/InP, Pd/GaAs, Pd/GaP structures and a comparative analysis of the photovoltaic characteristics of these structures. Tasks that were solved in the course of the study: 1. Development of sensitive elements based on Pd/oxide/InP, Pd/GaAs, Pd/GaP structures. 2. Measurementcurrent-voltage characteristicsof Pd/oxide/InP, Pd/GaAs, and Pd/GaP structures in vacuum and in a hydrogen atmosphere. 3. Measurement of photocurrent at forward displacement in Pd/oxide/InP, Pd/GaAs, Pd/GaP structures. 4. Comparative analysis of the photovoltaic characteristics of Pd/oxide/InP, Pd/GaAs, and Pd/GaP structures. Measurements to study the effect of hydrogen on the electrical characteristics of the Pd-oxide-InP structure were carried out in the temperature range 90-300 K. For the analysis of the data obtained, the Origin 2018 software was used. The dependences of the parameters characterizing the mechanisms of the structure's conductivity were obtained. The photocurrent of the Pd / oxide / InP, Pd / GaAs, and Pd / GaP structures was measured at forward bias. The saturation of the photocurrent in a hydrogen atmosphere andin a vacuum in the Pd / oxide / InP structure and an increase in the potential barrier in the Pd / GaAs and Pd / GaP structures were observed. The results obtained can be used in further studies to improve the photoelectric characteristics of the Pd / oxide / InP structure and to study the effect of hydrogen on the photoelectric characteristics of the Pd / GaAs and Pd / GaP structures under forward bias.