cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Preferential adsorption of para and ortho water molecules on charged nanoparticles in planetary ice clouds
Creators: name: Weidelt, Johanna
name: Dresch, Thomas
name: Duft, Denis
name: Leisner, Thomas
Publisher: name: Karlsruher Institut für Technologie (KIT)
Year: 2023

description: In the Earth mesopause, nanometer-size singly charged particles form by condensation of evaporated meteorite material. Tey exhibit an enhanced water adsorption cross section due to the strong charge-dipole-interaction. In this work, we study how the nuclear spin state of water molecules afects this enhancement and whether there are conditions that could lead to the formation of spin-polarized ice. Due to symmetry constraints on the total molecular wave function, ortho (proton spins parallel) and para (spins antiparallel) water occupy diferent rotational states, resulting in a diferent average dipole orientation in electric felds. Terefore, we expect ortho and para water to exhibit distinct ad- sorption enhancement factors onto charged nanoparticles. Based on Stark-shifs of individual rotational states of water, average dipole orientations of a molecu- lar ensemble and the resulting collision cross section was calculated for various temperatures and particle sizes. We found that in the mesosphere of the Earth (T~150K) the adsorption enhancement of ortho- and para- water is approxi- mately equal while at lower temperatures prevailing around ice giant planets and their moons, signifcant spin polarizations up to 15% occur.
Dephasing of an Electronic Two-Path Interferometer
Creators: name: Gurman, Itamar
name: Sabo, Ron
name: Heiblum, Moty
name: Umansky, Vladimir
name: Mahalu, Diana
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: FOS: Physical sciences

description: This work was motivated by the quest for observing interference of fractionally charged quasi particles. Here, we study the behavior of an electronic Mach-Zehnder interferometer (MZI) at the integer quantum Hall effect (IQHE) regime at filling factors greater than one. Both the visibility and the drift velocity were measured, and were found to be highly correlated as function of filling factor. As the filling factor approached unity, the visibility quenched, not to recover for filling factors smaller than unity. Alternatively, the velocity saturated around a minimal value at unity filling factor. We highlight the significant role interactions between the interfering edge and the bulk play, as well as that of the defining potential at the edge. Shot noise measurements suggest that phase-averaging (due to phase randomization), rather than single particle decoherence, is likely to be the cause of the dephasing in the fractional regime.
description: 14 pages, 4 figures
Application of the low finesse frequency comb for high resolution spectroscopy
Creators: name: Shakhmuratov, R. N.
name: Vagizov, F. G.
name: Scully, Marlan O.
name: Kocharovskaya, Olga
Publisher: name: arXiv
Year: 2015
Subjects: subject: Optics (physics.optics)
subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: High finesse frequency combs (HFC) with large ratio of the frequency spacing to the width of the spectral components have demonstrated remarkable results in many applications such as precision spectroscopy and metrology. We found that low finesse frequency combs having very small ratio of the frequency spacing to the width of the spectral components are more sensitive to the exact resonance with absorber than HFC. Our method is based on time domain measurements reviling oscillations of the radiation intensity after passing through an optically thick absorber. Fourier analysis of the oscillations allows to reconstruct the spectral content of the comb. If the central component of the incident comb is in exact resonance with the single line absorber, the contribution of the first sideband frequency into oscillations is exactly zero. We demonstrate this technique with gamma-photon absorbtion by Mössbauer nuclei providing the spectral resolution beyond the natural broadening.
description: 13 pages, 6 figures
Toward a Robust Diversity-Based Model to Detect Changes of Context
Creators: name: Castagnos, Sylvain
name: 'Huillier, Amaury L
name: Boyer, Anne
Publisher: name: arXiv
Year: 2016
Subjects: subject: Information Retrieval (cs.IR)
subject: Artificial Intelligence (cs.AI)
subject: FOS: Computer and information sciences

description: Being able to automatically and quickly understand the user context during a session is a main issue for recommender systems. As a first step toward achieving that goal, we propose a model that observes in real time the diversity brought by each item relatively to a short sequence of consultations, corresponding to the recent user history. Our model has a complexity in constant time, and is generic since it can apply to any type of items within an online service (e.g. profiles, products, music tracks) and any application domain (e-commerce, social network, music streaming), as long as we have partial item descriptions. The observation of the diversity level over time allows us to detect implicit changes. In the long term, we plan to characterize the context, i.e. to find common features among a contiguous sub-sequence of items between two changes of context determined by our model. This will allow us to make context-aware and privacy-preserving recommendations, to explain them to users. As this is an ongoing research, the first step consists here in studying the robustness of our model while detecting changes of context. In order to do so, we use a music corpus of 100 users and more than 210,000 consultations (number of songs played in the global history). We validate the relevancy of our detections by finding connections between changes of context and events, such as ends of session. Of course, these events are a subset of the possible changes of context, since there might be several contexts within a session. We altered the quality of our corpus in several manners, so as to test the performances of our model when confronted with sparsity and different types of items. The results show that our model is robust and constitutes a promising approach.
description: 27th IEEE International Conference on Tools with Artificial Intelligence (ICTAI 2015), Nov 2015, Vietri sul Mare, Italy
Hvordan arkivere data i DataverseNO
Creators: name: UiT The Arctic University Of Norway
Publisher: name: Zenodo
Year: 2023
Subjects: RDM
forskningsdatahåndtering
FAIR data
forskningsdata
åpne data
dataverseNO

description: Kursmateriale for webinaret “Hvordan arkivere data i DataverseNO”, del av en webinarserie om forskningsdatahåndtering ved UiT Norges Arktiske Universitet. For mer informasjon, besøk: site.uit.no/rdmtraining
A Banach-Dieudonné theorem for the space of bounded continuous functions on a separable metric space with the strict topology
Creators: name: Kraaij, Richard
Publisher: name: arXiv
Year: 2016
Subjects: subject: Functional Analysis (math.FA)
subject: General Topology (math.GN)
subject: FOS: Mathematics
subject: 46E10

description: Let X be a separable metric space and let βbe the strict topology on the space of bounded continuous functions on X, which has the space of τ-additive Borel measures as a continuous dual space. We prove a Banach-Dieudonneé type result for the space of bounded continuous functions equipped with β. As a consequence, this space is hypercomplete and a Pták space. Additionally, the closed graph, inverse mapping and open mapping theorems holds for linear maps between space of this type.
A new technique for ultra-fast physical random number generation using optical chaos
Creators: name: Elsonbaty, Amr
name: Hegazy, Salem F.
name: Obayyaa, Salah S. A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Optics (physics.optics)
subject: FOS: Physical sciences

description: In this paper, we numerically demonstrate a new extraction scheme for generating ultra-fast physically random sequence of bits. For this purpose, we utilize a dual-channel optical chaos source with suppressed time delayed (TD) signature in both the intensity and the phase of its two channels. The proposed technique uses M 1-bit analog-to-digital converters (ADCs) to compare the level of the chaotic intensity signal at time t with its levels after incommensurable delay-interval Tm, where m = {1,2,...,M}. The binary output of each 1-bit ADC is then sampled by a positive-edge-triggered D flip-flop. The clock sequence applied to the flip-flops is relatively delayed such that the rising edge of the clock triggering the m flip-flop precedes the rising edge of the clock of a subsequent m+1 flip-flop by a fixed period. The outputs of all flip-flops are then combined by means of a parity-check logic. Numerical simulations are carried out using values of parameters at which TD signature is suppressed for chosen values of setup parameters. The 15 statistical tests in Special Publication 800-22 from NIST are applied to the generated random bits in order to examine the randomness quality of these bits for different values of M. The results show that all tests are passed from M = 1 to M = 39 at sampling rate up to 34.5 GHz which indicates that the maximum generation rate of random bits is 2.691 Tb/sec using a chaotic source of single VCSEL and without employing any pre-processing techniques.
Construction and Test of MDT Chambers for the ATLAS Muon Spectrometer
Creators: name: Bauer, F.
name: Bratzler, U.
name: Dietl, H.
name: Kroha, H.
name: Lagouri, Th.
name: Manz, A.
name: Ostapchuk, A.
name: Richter, R.
name: Schael, S.
name: Chouridou, S.
name: Deile, M.
name: Kortner, O.
name: Staude, A.
name: Stroehmer, R.
name: Trefzger, T.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Instrumentation and Detectors (physics.ins-det)
subject: High Energy Physics - Experiment (hep-ex)
subject: FOS: Physical sciences

description: The Monitored Drift Tube (MDT) chambers for the muon spectrometer of the AT- LAS detector at the Large Hadron Collider (LHC) consist of 3-4 layers of pressurized drift tubes on either side of a space frame carrying an optical monitoring system to correct for deformations. The full-scale prototype of a large MDT chamber has been constructed with methods suitable for large-scale production. X-ray measurements at CERN showed a positioning accuracy of the sense wires in the chamber of better than the required 20 ?microns (rms). The performance of the chamber was studied in a muon beam at CERN. Chamber production for ATLAS now has started.
Towards Semantic Integration of Heterogeneous Sensor Data with Indigenous Knowledge for Drought Forecasting
Creators: name: Akanbi, Adeyinka K.
name: Masinde, Muthoni
Publisher: name: arXiv
Year: 2016
Subjects: subject: Artificial Intelligence (cs.AI)
subject: Networking and Internet Architecture (cs.NI)
subject: Software Engineering (cs.SE)
subject: FOS: Computer and information sciences

description: In the Internet of Things (IoT) domain, various heterogeneous ubiquitous devices would be able to connect and communicate with each other seamlessly, irrespective of the domain. Semantic representation of data through detailed standardized annotation has shown to improve the integration of the interconnected heterogeneous devices. However, the semantic representation of these heterogeneous data sources for environmental monitoring systems is not yet well supported. To achieve the maximum benefits of IoT for drought forecasting, a dedicated semantic middleware solution is required. This research proposes a middleware that semantically represents and integrates heterogeneous data sources with indigenous knowledge based on a unified ontology for an accurate IoT-based drought early warning system (DEWS).
description: 5 pages, 3 figures, In Proceedings of the Doctoral Symposium of the 16th International Middleware Conference (Middleware Doct Symposium 2015), Ivan Beschastnikh and Wouter Joosen (Eds.). ACM, New York, NY, USA
Application of (Delta)n Normalised Time, (Gamma): Linear Injection-Level Dependence on LeTID and the Recovery in Crystalline Silicon
Creators: name: Kim, M.
name: Ciesla, A.
name: Sun, C.
name: Chen, D.
name: Abbott, M.
name: Hallam, B.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 191-193
description: The impact of the injection-level ((Delta)n) on the kinetics of light- and elevated temperature-induced degradation (LeTID) is investigated. Higher illumination intensities (I) are known to increase the LeTID and recovery rates. In this work, the (Delta)n normalisation approach is demonstrated. A similar time scale is observed after normalisation to the (Delta)n at the given I to time. The evidence suggests the recovery rate of LeTID is linearly proportional to (Delta)n and can potentially be used to predict long-term degradation, which can incorporate operating conditions and insolation level, based on an accelerated degradation testing using (Delta)n dependence. The experiment results demonstrated the difference in LeTID and the recovery trends and the overall rates. The variation of (Delta)n during the cycle leads to a slow rate during the degradation since both (Delta)n and the amount of available defect precursors are reduced. However, during the recovery, the (Delta)n is being recovered as the defect states are reduced, which appears to show compressed exponential recovery. The normalisation approach demonstrated here showed very close agreement among the results with different illumination intensities. The implication eliminated both influences due to variation of (Delta)n and the acceleration of the rate due to high n or illumination intensity.
Vortex formation in protoplanetary discs induced by the vertical shear instability
Creators: name: Richard, Samuel
name: Nelson, Richard P.
name: Umurhan, Orkan M.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Earth and Planetary Astrophysics (astro-ph.EP)
subject: FOS: Physical sciences

description: We present the results of 2D and 3D hydrodynamic simulations of idealized protoplanetary discs that examine the formation and evolution of vortices by the vertical shear instability (VSI). In agreement with recent work, we find that discs with radially decreasing temperature profiles and short thermal relaxation time-scales, are subject to the axisymmetric VSI. In three dimensions, the resulting velocity perturbations give rise to quasi-axisymmetric potential vorticity perturbations that break-up into discrete vortices, in a manner that is reminiscent of the Rossby wave instability. Discs with very short thermal evolution time-scales (i.e. τ<0.1 local orbit periods) develop strong vorticity perturbations that roll up into vortices that have small aspect ratios (χ<2) and short lifetimes (~ a few orbits). Longer thermal time-scales give rise to vortices with larger aspect ratios (6
Carrier Lifetime Measurements of Monocrystalline Silicon Ingots Using Upgraded Laser E-PCD Technique
Creators: name: Krisztian, D.
name: Korsós, F.
name: Saegh, I.
name: Paráda, G.
name: Tüttö, P.
name: Dong, X.
name: Deng, H.
name: Wang, S.
name: Chen, X.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 194-197
description: The photoconductance decay (PCD) method is a standard characterization technique for carrier lifetime characterization of silicon ingots. We analyzed the precision of the eddy current PCD technique using monochromatic light focusing on the impact of the properties of the laser excitation. The PCD measurement simulations showed that the impact of the surface recombination in the measured lifetime and the injection level is highly influenced by the wavelength and the pulse duration of the laser excitation source. Considering the time evolution of carrier profile as well, an optimal wavelength range between 1050 and 1070 nm has been found. The eddy-current detected PCD (e-PCD) measurements using the original 980 nm and a rather optimal 1064 nm laser was compared experimentally and by simulation in details. In the injection independent lifetime model, the effective lifetime approaches the bulk lifetime asymptotically within a reasonable time, and both laser source provides accurate result as experimentally confirmed. However, if carrier lifetime varies significantly with injection level, a pronounced difference between the asymptotic lifetimes recorded using the different lasers is observed. Lifetime values from the longer wavelength setup approach the saturation value of bulk lifetime even in this case. This is an additional important advantage of using the longer wavelength laser for ingot PCD measurements. Comparing the laser e-PCD results to flash lamp based PCD systems, a good correlation is found in the long lifetime regime. However, the significant discrepancies found between transient and Quasi-Steady-State (QSS) modes of the flash lamp PCD system indicate that performing the measurement in transient mode for the entire lifetime range is very beneficial, which is realized using the laser based PCD method.
Stable Reverse Bias or Integrated Bypass Diode in HIP-MWT+ Solar Cells Based on Different Industrial Rear Passivation
Creators: name: Schweigstill, T.
name: Spribille, A.
name: Huyeng, J.D.
name: Clement, F.
name: Glunz, S.W.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
Characterisation & Simulation of Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 177-180
description: The Metal Wrap Through+ (HIP-MWT+) solar cell is based on the PERC concept but features two additional electrical contacts, namely the Schottky contact between p-type Si bulk and Ag n-contact and the metal-insulator-semiconductor (MIS) contact on the rear side of the cell below the n-contact pads. To prevent hotspots under reverse bias, both contacts shall either restrict current flow or allow a homogenous current flow at low voltage. In this work we present both options. First the stable reverse bias characteristics up to – 15 V with a MIS contact using industrially manufactured SiON passivation and second, an integrated by-pass diode using AlOX as insulator in the passivation stack allowing current flows at approximately Vrev = – 3.5 V depending on the chosen screen-print paste. The examined Schottky contacts break down at around Vrev = – 2.5 V. Reverse bias testing of the cells proof a solid performance of the cells under reverse bias and an average conversion efficiency of = 21.2 % (AlOX) and = 20.7 % (SiON), respectively.
A Round Robin - HighLiting on the Passivating Contact Technology
Creators: name: Fellmeth, T.
name: Feldmann, F.
name: Steinhauser, B.
name: Nagel, H.
name: Mack, S.
name: Hermle, M.
name: Torregrosa, F.
name: Ingenito, A.
name: Haug, F.-J.
name: Morisset, A.
name: Buchholz, F.
name: Chaudhary, A.
name: Desrues, T.
name: Haase, F.
name: Min, B.
name: Peibst, R.
name: Tous, L.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
Characterisation & Simulation of Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 181-185
description: The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, ISFH, IMEC and Fraunhofer ISE within the H2020 funded project called HighLite. For all layers, dark saturation current-densities ranging between 2-10 fA/cm² can be reported. Simultaneously, no metal induced recombination for the two lower sintering temperatures have been observed pointing towards a true passivated contact. Furthermore, contact resistivities below 10 mcm² have been achieved. It seems that the industrial passivating contact matured to a fully passivated and conducting contact enabling full efficiency potential. The fact that this can be realized using either PECVD or LPCVD from various manufacturer is expected to drive costs down and contribute to the increased adoption of the TOPCon technology.
“Aby Warburg was a volcano” Max Adolph Warburg, for the Centenary of Aby Warburg’s Birth (1966)
Creators: name: Stimilli, Davide; Warburg, Max Adolph
Publisher: name: La Rivista di Engramma
Year: 2024
Subjects: Max Adolph Warburg
Aby Warburg
Mary Hertz
Gertrud Bing
Fritz Saxl
Ernst Gombrich

description: Davide Stimilli presents the first English edition of the lecture given by Max Adolph Warburg on the occasion of the centenary of his father’s birth in 1966. The text has so far only appeared in Stimilli’s Italian translation entitled Per il centenario della nascita di Aby Warburg in the monographic issue of the magazine “aut aut” (“aut aut” 321-322, maggio-agosto 2004, Aby Warburg, La dialettica dell'immagine, 173-183), but is still unpublished in the original language. This text, written and never read to an audience, paints a portrait of Aby Warburg’s explosive intellect and influence, which Max Adolph poetically associates with disruptive volcanic activity. This issue of Engramma includes both the original English and an updated Italian translation.
Electronic Properties and Structure of Boron-Hydrogen Complexes in Crystalline Silicon
Creators: name: De Guzman, J.A.T.
name: Markevich, V.P.
name: Coutinho, J.
name: Abrosimov, N.V.
name: Halsall, M.P.
name: Peaker, A.R.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
Feedstock, Crystallisation, Wafering, Defect Engineering

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 186-190
description: The significance of hydrogen in the passivation of doping impurities and recombination active defects in silicon is well-established. It has been suggested recently that complexes of hydrogen with boron can be involved in the so-called "light and elevated temperature-induced degradation" (LeTID) in B-doped Si solar cells but the details of the relevant hydrogen-related reactions are not understood. In this work, the subject of hydrogen-boron interactions in crystalline silicon is revisited. We have carried out ab-initio modelling of the structure, binding energy, and electronic properties of complexes incorporating a boron and one or two hydrogen atoms. Further, the electrically active defects have been studied with the use of junction capacitance techniques in n-type Cz-Si samples co-doped with phosphorus and boron and subjected to hydrogenation by different methods. In DLTS spectra of the hydrogenated Si:P+B crystals subjected to reverse bias annealing at 100 oC, an electron emission signal with an activation energy of ~0.175 eV has been detected. The trap is a donor with electronic properties close to those predicted by ab-initio modelling for borondihydrogen (BH2) complex. It is argued that BH2 can be a very efficient recombination center for minority carriers and may be responsible for LeTID in B-doped p-type Si crystals.
Low Temperature Post-Process Repassivation for Heterojunction Cut-Cells
Creators: name: Harrison, S.
name: Portaluppi, B.
name: Bertrand, P.
name: Giglia, V.
name: Martel, B.
name: Sekkat, A.
name: Munoz-Rojas, D.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 167-171
description: Tremendous progresses have been recently made for all cell technologies, and single junction solar cells are currently approaching their theoretical limits. However, to further decrease the Levelized Cost Of Energy, and keep increasing the interest for PV installations, higher module power/efficiencies are still required. Most common approach is thus to work with cut-cells to reduce the resistive losses, but more and more module manufacturers are also considering “zero- gap” or shingling integrations, as we can maximize the active area of silicon within the panels. Such modules with very high power are thus currently gaining market shares, and may soon become the norm for all technologies. However, new challenges also arise, especially with the new cutting-step, which generates additional defectivity and affects quite significantly the cell performances. This is particularly true for Heterojunction (SHJ), because of the very high passivation values needed to maximize its performances. It is thus mandatory to be able to properly characterize the cut- edges generated, and minimize their impact either with adapted cuting-processes or with post-process repassivation. Although several studies already propose different edge repassivation approaches, most of them show only partial performance recovery or unstable final precursor characteristics. Furthermore, contrary to other structure such as PERC or TOPCon, SHJ is manufactured at low-temperature, which brings additional constraints for the optimization of compatible processes. In this paper, we intend to provide insights on cut-edge repassivation capability for SHJ, showing in particular that even in optimized conditions, high passivation is not straightforward to achieve.
Analysis and Correction of Systematic Deviations in Measurements of the Spectral Irradiance of Solar Simulators
Creators: name: Schinke, C.
name: Hinken, D.
name: Wolf, M.
name: Bothe, K.
name: Kröger, I.
name: Bagusch, M.
name: Nevas, S.
name: Winter, S.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
Characterisation & Simulation of Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 172-176
description: Measuring the spectral irradiance of solar simulators is required, among other applications, for rating the simulators with respect to spectral match according to the IEC 60904 standard series. Many laboratories therefore routinely operate spectroradiometers. In this contribution, we discuss the impact of systematic measurement deviations related to the measuring procedure, which have the potential to hamper accurate measurements. We show that deviations of the order of 5% may occur due to distance adjustment and background signal measurement during the calibration of spectroradiometers, which might even sum up in the worst case. Mitigation strategies are discussed and best practices identified: The position of the spectroradiometer’s measuring head’s optical reference plane should be examined and external stray light should be measured and corrected using a beam block method.
Low-energy hypernuclear spectra with microscopic particle-rotor model with relativistic point coupling hyperon-nucleon interaction
Creators: name: Mei, H.
name: Hagino, K.
name: Yao, J. M.
name: Motoba, T.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Nuclear Theory (nucl-th)
subject: Nuclear Experiment (nucl-ex)
subject: FOS: Physical sciences

description: We extend the microscopic particle-rotor model for hypernuclear low-lying states by including the derivative and tensor coupling terms in the point-coupling nucleon-$Λ$ particle ($NΛ$) interaction. Taking $^{13}_{~Λ}$C as an example, we show that a good overall description for excitation spectra is achieved with four sets of effective $NΛ$ interaction. We find that the $Λ$ hyperon binding energy decreases monotonically with increasing the strengths of the high-order interaction terms. In particular, the tensor coupling term decreases the energy splitting between the first $1/2^-$ and $3/2^-$ states and increases the energy splitting between the first $3/2^+$ and $5/2^+$ states in $^{13}_{~Λ}$C.
description: 11 pages, 5 figures
Approaching 23% with p-Type Back Junction Solar Cells Featuring Screen-Printed Al Front Grid and Passivating Rear Contacts
Creators: name: Min, B.
name: Wehmeier, N.
name: Schulte-Huxel, H.
name: Witteck, R.
name: Brendemühl, T.
name: Daschinger, T.
name: Haase, F.
name: Larionova, Y.
name: Nasebandt, L.
name: Tsuji, K.
name: Dhamrin, M.
name: Peibst, R.
name: Brendel, R.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 158-161
description: This paper reports the recent progress of p-type back junction (BJ) solar cells featuring passivating polysilicon on oxide (POLO) rear contacts and Al front contacts. The current best cell efficiency on full M2 Cz wafers is 22.9 % as independently confirmed by ISFH CalTeC in Germany. To our knowledge, this is the highest efficiency for a p-type solar cell with screen-printed Al grid on textured front side. We improve the passivation quality beneath rear metal fingers by increasing the SiNy capping layer thickness. This prevents spiking through the poly-Si layers by screen-printed silver during the firing step and results in a record Voc of 716 mV for a fully screen-printed large-area ptype solar cell with Al-alloyed local contacts. The Al front grid is improved by an upgraded Al paste which enables narrow metal fingers down to 64 µm with higher aspect ratio up to 0.5. We investigate the morphology of the of p+- type layers beneath the Al fingers by scanning electron microscopy. In addition, the UV resistance of the AlOx/SiNy passivation stack on undiffused textured front side is investigated by applying UV transparent encapsulant materials.As a possible upgrade option, we present our first proof-of-concept Ag-free POLO BJ solar cell with an efficiency of 17.9 %.
Evaluation of Different Approaches for HJT Cells Metallization Based on Low Temperature Ag Pastes
Creators: name: Galiazzo, M.
name: Frasson, N.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
Low Temperature Route for Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 162-166
description: One key concern when implementing HJT cells is related to the metallization process, where several limitations are present when using low temperature Ag pastes, curable at 200°C to preserve the a-Si structure. These limitations are reduced printing speed and limited printing ability on fine lines, increased logistics costs, solderability. In this work we investigate two possible alternative routes to the mainstream paste models: the evolutional is based on room temperature paste, not requiring refrigeration and with increased printing performances and the revolutionary, using nano-Ag particles, is surpassing the usual printing speed by three times, with half the deposit if compared to the others.
First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$
Creators: name: Koskelo, J.
name: Hashemi, J.
name: Huotari, S.
name: Hakala, M.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: We present a comprehensive study of the electronic, magnetic, and optical properties of CuGa$_{1-x}$Fe$_x$S$_2$, as a promising candidate for intermediate-band (IB) solar cells. We use hybrid exchange-correlation functional within the density functional theory framework, and show that Fe doping induces unoccupied states 1.6-1.9 eV above the valence band. The IBs significantly enhance the optical absorption in lower energy part of the spectrum. We find that at moderate $n$-type co-doping concentration, the added charge occupies part of the IB in the gap, but large concentrations lower the energy of the occupied IB toward the valence band. Moreover, we show that Fe impurities tend to cluster within the compound and they choose antiferromagnetic ordering. The findings can have a significant effect in understanding this material and help to synthesize more efficient IB solar cells.
Controlling Doping Density in DC-Sputtered In-Situ Phosphorous-Doped Polysilicon Layers for Passivating Contacts
Creators: name: Nasebandt, L.
name: Min, B.
name: Hübner, S.
name: Dippell, T.
name: Wohlfart, P.
name: Peibst, R.
name: Brendel, R.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 147-149
description: This article reports on using direct current (DC) sputter deposition of Si for passivating polysilicon on oxide (POLO) contacts. We measure the doping density in DC-sputtered in-situ n+-type poly-Si layers and study their passivation quality using symmetric lifetime samples. We compare in-situ doped samples with samples that are additionally ex-situ doped by a POCl3 diffusion. The best sputtered and solely in-situ doped sample shows excellent passivation quality with an implied open circuit voltage of 734 mV and a median surface recombination current density of (2.1 ± 0.4) fA/cm² after a hydrogenation step.
Die Theologie über die exegetische Detailarbeit
Creators: name: Iersel, Bastiaan Martinus Franciscus Van
name: Schoonenberg, Piet
Publisher: name: Concilium
Year: 1970

description: Concilium, Bd. 7 Nr. 12 (1971): Concilium: Internationale Zeitschrift für Theologie, Band 7, Heft 12
A Clean Sightline to Quiescence: Multiwavelength Observations of the High Galactic Latitude Black Hole X-ray Binary Swift J1357.2-0933
Creators: name: Plotkin, Richard M.
name: Gallo, Elena
name: Jonker, Peter G.
name: Miller-Jones, James C. A.
name: Homan, Jeroen
name: Munoz-Darias, Teo
name: Markoff, Sera
name: Padilla, Montserrat Armas
name: Fender, Rob
name: Rushton, Anthony P.
name: Russell, David M.
name: Torres, Manuel A. P.
Publisher: name: arXiv
Year: 2015
Subjects: subject: High Energy Astrophysical Phenomena (astro-ph.HE)
subject: FOS: Physical sciences

description: We present coordinated multiwavelength observations of the high Galactic latitude (b=+50 deg) black hole X-ray binary (XRB) J1357.2-0933 in quiescence. Our broadband spectrum includes strictly simultaneous radio and X-ray observations, and near-infrared, optical, and ultraviolet data taken 1-2 days later. We detect Swift J1357.2-0933 at all wavebands except for the radio (f_5GHz < 3.9 uJy/beam). Given current constraints on the distance (2.3-6.3 kpc), its 0.5-10 keV X-ray flux corresponds to an Eddington ratio Lx/Ledd = 4e-9 -- 3e-8 (assuming a black hole mass of 10 Msun). The broadband spectrum is dominated by synchrotron radiation from a relativistic population of outflowing thermal electrons, which we argue to be a common signature of short-period quiescent BHXBs. Furthermore, we identify the frequency where the synchrotron radiation transitions from optically thick-to-thin (approximately 2-5e14 Hz, which is the most robust determination of a 'jet break' for a quiescent BHXB to date. Our interpretation relies on the presence of steep curvature in the ultraviolet spectrum, a frequency window made observable by the low amount of interstellar absorption along the line of sight. High Galactic latitude systems like Swift J1357.2-0933 with clean ultraviolet sightlines are crucial for understanding black hole accretion at low luminosities.
description: 12 pages, 5 Figures, 1 Table. Accepted for publication in MNRAS
Hydrogenation of Sputtered ZnO:Al Layers for Double Side Poly-Si/SiOx Integration
Creators: name: Seron, C.
name: Desrues, T.
name: Jay, F.
name: Lanterne, A.
name: Borvon, G.
name: Torregrosa, F.
name: Rafhay, Q.
name: Kaminski, A.
name: Dubois, S.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 150-153
description: This work reports on the development of hydrogenation treatments on indium-free transparent conductive oxide (TCO) layers. The final purpose is to integrate those TCO layers on solar cells featuring double-side thin polysilicon on oxide based passivated contacts. More precisely, ZnO:Al (AZO) layers were developed with in-situ incorporation of hydrogen during their deposition by DC magnetron sputtering. The AZO films feature optical and electrical properties compatible with the elaboration of high efficiency devices. They were integrated in complete solar cells with promising performances, with a maximum conversion efficiency reaching 22.4%. These results show the possibility to move towards indium-free alternatives for contacting poly-Si on oxide based passivated contacts.
Håndtering av forskningsdata ved UiT
Creators: name: UiT The Arctic University Of Norway
Publisher: name: Zenodo
Year: 2023
Subjects: RDM
forskningsdatahåndtering
FAIR data
forskningsdata

description: Kursmateriale for webinaret “Håndtering av forskningsdata ved UiT”, del av en webinarserie om forskningsdatahåndtering ved UiT Norges Arktiske Universitet. For mer informasjon, besøk: site.uit.no/rdmtraining
Large diffusion lengths of excitons in perovskite and ${\it TiO_2}$ heterojunction
Creators: name: Gevorkian, Zhyrair
name: Gasparian, Vladimir
name: Lozovik, Yurii
Publisher: name: arXiv
Year: 2016
Subjects: subject: Materials Science (cond-mat.mtrl-sci)
subject: FOS: Physical sciences

description: Solar cells based on organometal halide perovskites have recently become very promising among other materials because of their cost-effective character and improvements in efficiency. Such performance is primarily associated with effective light absorption and large diffusion length of charge carriers. Our paper is devoted to the explanation of large diffusion lengths in these systems. The transport mean free path of charged carriers in a perovskite/${\it TiO_2}$ heterojunction that is an important constituent of the solar cells have been analyzed. Large transport length is explained by the planar diffusion of indirect excitons. Diffusion length of the coupled system increases by several orders compared to single carrier length due to the correlated character of the effective field acting on the exciton.
description: 9pages,1figure
Rear Side Dielectrics on Interdigitating p+-(i)-n+ Back-Contact Solar Cells – Hydrogenation vs. Charge Effects
Creators: name: Rienäcker, M.
name: Larionova, Y.
name: Krügener, J.
name: Wolter, S.
name: Brendel, R.
name: Peibst, R.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 154-157
description: Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities – a POLO²-IBC cell – has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH’s 26.1%- efficient POLO²-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO²-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.
Firn-air Modelling in the Community Firn Model
Creators: name: Holm, Jesper Ejlebæk
Publisher: name: Zenodo
Year: 2023
Subjects: Polar firn
Brent's method
Community Firn Model
Ice Core

description: Abstract:
 Over the last glacial period, a series of 25 climate fluctuations were observed, characterized
 by rapid warming followed by a longer cooling period. One of these Dansgaard-Oescher (D-O)
 events happened around 11,500 years ago and heralded the end of the ice age and the beginning
 of the Holocene period. To simulate these events, studies use firn densification models coupled
 to air and heat diffusion in order to reconstruct paleotemperatures.
 The Community Firn Model (CFM) is one such example, and it provides an open-source-modular
 framework to simulate physical processes in the firn. A 1-dimensional Lagrangian grid is used
 where density is explicitly calculated while diffusion is solved through an implicit Finite Volume
 Method (FVM). The project seeks to aid in the interpretation of these DO-events by conducting
 two experiments to better understand the model’s behaviour under different conditions.
 Initially, we examine the behaviour of the CFM with different densification schemes by testing a
 variety of “DO-like” events. It is observed that higher temperatures and lower accumulation rates
 lead to a shallower close-off depth. Secondly, noisy 𝛿15N data, computed from NGRIP, is inverted
 into noisy temperature data by way of Brent’s root-finding method. Then the sensitivity of the
 inverted temperatures is estimated by including uncertainty from sources such as 𝛿15N, surface
 density and diffusivity parameterization. We find that the magnitude of the 𝛿15N uncertainty is
 paramount for reliable interpretation of reconstructed temperatures.
 Finally, the halfway time to a new equilibrium following a linear fluctuation is computed for a
 series of different amplitudes and duration. We show that for changes in amplitude, the halfway
 time tends to decrease, while the behaviour is more complex for the duration. Moreover, we
 estimate the uncertainty of the temperature gradient by calculating the excess of stable nitrogen
 isotopes compared to argon. This is used to compute the true equilibrium time for which the
 opposite behaviour is seen. Based on this the merits of the Halfway time versus Equilibrium time
 are discussed in the view of interpreting past climates.
www.nmrium.org: Revolutionizing NMR Spectra Processing with a Free Web-Based Application
Creators: name: Musallam, Hamed
name: Bolaños, Alejandro
name: Patiny, Luc
Publisher: name: Zenodo
Year: 2023
Subjects: NMR processing
process nuclear magnetic resonance (NMR) spectra
spectra analysis tool
multiplet analysis
metabolomics
molecules

description: Nuclear Magnetic Resonance (NMR) spectroscopy is a widely used technique in chemistry and related fields for elucidating chemical structures and analyzing molecule properties. However, processing and analyzing NMR spectra can be challenging and often requires specialized software. To address this issue, NMRium (https://www.nmrium.org) is an innovative web-based application that provides a breakthrough solution, particularly in the context of making chemical knowledge collective and machine actionable.
Local Passivating Contacts from Laser Doped P+ Polysilicon
Creators: name: Buchholz, F.
name: Linke, J.
name: Hoß, J.
name: Chu, H.
name: Mihailetchi, V.D.
name: Chaudhary, A.
name: Arumughan, J.
name: Lossen, J.
name: Kopecek, R.
name: Wefringhaus, E.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 140-143
description: A simple, mask-less process for the fabrication of localized p+ poly-Si structures is presented based on etch selectivity of highly doped p+ poly-Si. We show the optimization steps that were necessary to obtain a reliable, uniform and reproducible process, namely optimization of the doping source layer, laser parameters, alkaline etching and texturing step. Furthermore, the dopant profiles were tuned by different BBr3 emitter diffusions in combination with tunnel oxide thickness variation. The suggested process flow allows for simple integration in the our n-type passivated contact cell concept TOUCAN™ as selective poly-Si emitter layers below the metal fingers on the front side.
Protein connectivity in chemotaxis receptor complexes
Creators: name: Eismann, Stephan
name: Endres, Robert G.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Cell Behavior (q-bio.CB)
subject: Biological Physics (physics.bio-ph)
subject: FOS: Biological sciences
subject: FOS: Physical sciences

description: The chemotaxis sensory system allows bacteria such as Escherichia coli to swim towards nutrients and away from repellents. The underlying pathway is remarkably sensitive in detecting chemical gradients over a wide range of ambient concentrations. Interactions among receptors, which are predominantly clustered at the cell poles, are crucial to this sensitivity. Although it has been suggested that the kinase CheA and the adapter protein CheW are integral for receptor connectivity, the exact coupling mechanism remains unclear. Here, we present a statistical-mechanics approach to model the receptor linkage mechanism itself, building on nanodisc and electron cryotomography experiments. Specifically, we investigate how the sensing behavior of mixed receptor clusters is affected by variations in the expression levels of CheA and CheW at a constant receptor density in the membrane. Our model compares favorably with dose-response curves from in vivo Förster resonance energy transfer (FRET) measurements, demonstrating that the receptor-methylation level has only minor effects on receptor cooperativity. Importantly, our model provides an explanation for the non-intuitive conclusion that the receptor cooperativity decreases with increasing levels of CheA, a core signaling protein associated with the receptors, whereas the receptor cooperativity increases with increasing levels of CheW, a key adapter protein. Finally, we propose an evolutionary advantage as explanation for the recently suggested CheW-only linker structures.
Novel Poly-Si:Ga/SiOx Passivating Contacts through Non-Equilibrium Doping
Creators: name: Chen, K.
name: Napolitani, E.
name: De Tullio, M.
name: Jiang, C.-S.
name: Theingi, S.
name: Nemeth, W.
name: Page, M.
name: Stradins, P.
name: Agarwal, S.
name: Young, D.L.
Publisher: name: WIP
Year: 2021
Subjects: Silicon Materials and Cells
High Temperature Route for Si Cells

description: 38th European Photovoltaic Solar Energy Conference and Exhibition; 144-146
description: Poly-Si/SiOx passivating contacts are one of the key enablers for high-efficiency, low-cost c-Si solar cells. In recent years, record devices have reached efficiencies of 26% in the laboratory and 25% in the industry. The current cell structure utilizing a tunneling oxide passivating contact structure with a back phosphorus-doped poly- Si/SiOx passivating contact and a front boron diffused emitter suffers from large emitter recombination. Thus, replacing the front B diffused emitter with a p-type passivating contact is a route to overcome this deficiency. This gives rise to front/back poly-Si based passivating contacts. To address the low passivation performance of the B-doped poly-Si passivating contacts, we replace B with Ga as a novel p-type dopant to avoid dopant accumulation in the tunneling oxide, which is known to lead to large degradation loss in passivation quality. Here, we introduce a non-equilibrium method via pulsed laser melting to thermally melt and recrystallize the poly-Si and redistribute the dopants, achieving doping concentrations above the solid solubility limit (~4E19 cm-3). We demonstrate a good passivation quality with an iVoc of 721 mV with an active Ga doping concentration in poly-Si >1020 cm-3. Furthermore, we show a low contact resistivity of 33.2 ± 9.3 mΩ∙ cm2 using a diode model calculation. Finally, cross-section scanning spreading resistance microscopy was performed to determine the resistance profile across the non-homogeneously doped poly-Si layer.