Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon
Creators: name: Wagenpfeil, M.
name: Ziegler, T.
name: Schneider, J.
name: Fieguth, A.
name: Murra, M.
name: Schulte, D.
name: Althueser, L.
name: Huhmann, C.
name: Weinheimer, C.
name: Michel, T.
name: Anton, G.
name: Adhikari, G.
name: Kharusi, S. Al
name: Angelico, E.
name: Arnquist, I. J.
name: Badhrees, I.
name: Bane, J.
name: Beck, D.
name: Belov, V.
name: Bhatta, T.
name: Bolotnikov, A.
name: Breur, P. A.
name: Brodsky, J. P.
name: Brown, E.
name: Brunner, T.
name: Caden, E.
name: Cao, G. F.
name: Chambers, C.
name: Chana, B.
name: Charlebois, S. A.
name: Chernyak, D.
name: Chiu, M.
name: Cleveland, B.
name: Craycraft, A.
name: Daniels, T.
name: Darroch, L.
name: Der Mesrobian-Kabakian, A.
name: Croix, A. de St
name: Deslandes, K.
name: DeVoe, R.
name: Di Vacri, M. L.
name: Dolinski, M. J.
name: Echevers, J.
name: Elbeltagi, M.
name: Fabris, L.
name: Fairbank, D.
name: Fairbank, W.
name: Farine, J.
name: Ferrara, S.
name: Feyzbakhsh, S.
name: Gallina, G.
name: Gautam, P.
name: Giacomini, G.
name: Gingras, C.
name: Goeldi, D.
name: Gorham, A.
name: Gornea, R.
name: Gratta, G.
name: Hansen, E. V.
name: Hardy, C. A.
name: Harouaka, K.
name: Heffner, M.
name: Hoppe, E. W.
name: House, A.
name: Hughes, M.
name: Iverson, A.
name: Jamil, A.
name: Jewell, M.
name: Karelin, A.
name: Kaufman, L. J.
name: Krücken, R.
name: Kuchenkov, A.
name: Kumar, K. S.
name: Lan, Y.
name: Larson, A.
name: Leach, K. G.
name: Leonard, D. S.
name: Li, G.
name: Li, S.
name: Li, Z.
name: Licciardi, C.
name: Lindsay, R.
name: MacLellan, R.
name: Martel-Dion, P.
name: Massacret, N.
name: McElroy, T.
name: Peregrina, M. Medina
name: Mong, B.
name: Moore, D. C.
name: Murray, K.
name: Nattress, J.
name: Natzke, C. R.
name: Newby, R. J.
name: Nolet, F.
name: Nusair, O.
name: Ondze, J. C. Nzobadila
name: Odgers, K.
name: Odian, A.
name: Orrell, J. L.
name: Ortega, G. S.
name: Ostrovskiy, I.
name: Overman, C. T.
name: Parent, S.
name: Piepke, A.
name: Pocar, A.
name: Pratte, J. -F.
name: Raguzin, E.
name: Ramonnye, G. J.
name: Rasiwala, H.
name: Rescia, S.
name: Retière, F.
name: Richard, C.
name: Richman, M.
name: Ringuette, J.
name: Robinson, A.
name: Rossignol, T.
name: Rowson, P. C.
name: Roy, N.
name: Saldanha, R.
name: Sangiorgio, S.
name: Soma, A. K.
name: Spadoni, F.
name: Stekhanov, V.
name: Stiegler, T.
name: Tarka, M.
name: Thibado, S.
name: Tidball, A.
name: Todd, J.
name: Totev, T.
name: Triambak, S.
name: Tsang, R.
name: Vachon, F.
name: Veeraraghavan, V.
name: Viel, S.
name: Vivo-Vilches, C.
name: Walent, M.
name: Wichoski, U.
name: Worcester, M.
name: Wu, S. X.
name: Xia, Q.
name: Yan, W.
name: Yang, L.
name: Zeldovich, O.
Publisher: name: arXiv
Year: 2021
Subjects: subject: Instrumentation and Detectors (physics.ins-det)
subject: FOS: Physical sciences
subject: FOS: Physical sciences

description: Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36% at an angle of incidence of 20° for the four samples and increases to up to 65% at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.
description: 18 pages, 11 figures