title: ÐÐ¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ ÑÐ¾ÑÑÐ¾Ð²ÑÑ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¸ ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÑÐ½Ð¾Ðº Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¼ÐµÑÐ¾Ð´Ð¾Ð² Ð¼Ð°ÑÐ¸Ð½Ð½Ð¾Ð³Ð¾ Ð¾Ð±ÑÑÐµÐ½Ð¸Ñ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Optimization of Crystal and Thin Film Growth Processes Using Machine Learning
Creators: name: Ð£ÑÑÑÐ»ÐµÐ½ÐºÐ¾, ÐÐ¸ÐºÐ¸ÑÐ°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: ÑÐ¾ÑÑ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð²
ÑÐ¾Ð½ÐºÐ¸Ðµ Ð¿Ð»ÐµÐ½ÐºÐ¸
Ð¼Ð°ÑÐ¸Ð½Ð½Ð¾Ðµ Ð¾Ð±ÑÑÐµÐ½Ð¸Ðµ
ÑÐ¸Ð¼Ð²Ð¾Ð»ÑÐ½Ð°Ñ ÑÐµÐ³ÑÐµÑÑÐ¸Ñ
Ð¼ÐµÑÐ¾Ð´ Ð¼Ð¾Ð½ÑÐµ-ÐºÐ°ÑÐ»Ð¾
Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ
ÑÐºÐ¾ÑÐ¾ÑÑÑ ÑÐ¾ÑÑÐ°
ÑÐµÑÐ¾Ñ Ð¾Ð²Ð°ÑÐ¾ÑÑÑ Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ¸
Ð±Ð°ÑÑÐµÑ ÑÐ²Ð¾Ð±ÐµÐ»Ñ
crystal growth
thin films
machine learning
symbolic regression
monte carlo method
optimization
growth rate
surface roughness
schwoebel barrier

description: Ð Ð°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐµ Ð½Ð¾Ð²Ð¾Ð³Ð¾ Ð¿Ð¾Ð´ÑÐ¾Ð´Ð° Ðº Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ð¸ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÑÐ¾ÑÑÐ° ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð² Ð¸ ÑÐ¾Ð½ÐºÐ¸Ñ Ð¿Ð»ÑÐ½Ð¾Ðº. ÐÐ°Ð¶Ð½Ð¾ÑÑÑ ÑÐ°Ð±Ð¾ÑÑ Ð¾Ð±ÑÑÐ»Ð¾Ð²Ð»ÐµÐ½Ð° Ð½ÐµÐ¾Ð±ÑÐ¾Ð´Ð¸Ð¼Ð¾ÑÑÑÑ ÑÐ¾ÑÐ½Ð¾Ð³Ð¾ ÐºÐ¾Ð½ÑÑÐ¾Ð»Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð² Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ ÑÐ¾Ð²ÑÐµÐ¼ÐµÐ½Ð½ÑÑ ÑÑÑÑÐ¾Ð¹ÑÑÐ² Ð² Ð¼Ð¸ÐºÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐµ Ð¸ Ð´ÑÑÐ³Ð¸Ñ Ð¾Ð±Ð»Ð°ÑÑÑÑ. Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° Ð½Ð¾Ð²Ð¾Ð³Ð¾ ÑÑÑÐµÐºÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ Ð¿Ð¾Ð´ÑÐ¾Ð´Ð° Ðº Ð¾Ð¿Ð¸ÑÐ°Ð½Ð¸Ñ ÑÐ¾ÑÑÐ° ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð° Ð²Ð¾ Ð²ÑÐµÐ¼ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐ¾ÑÑÐ¾Ð²ÑÑ ÑÐµÐ¶Ð¸Ð¼Ð¾Ð² Ð¸ ÑÐ¾ÑÑÐ¾Ð²ÑÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ Ñ Ð°ÑÐ¾Ð¼Ð¸ÑÑÐ¸ÑÐµÑÐºÐ¾Ð¹ ÑÐ¾ÑÐ½Ð¾ÑÑÑÑ. ÐÐµÑÐ¾Ð´Ð¾Ð»Ð¾Ð³Ð¸Ñ Ð²ÐºÐ»ÑÑÐ°ÐµÑ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ðµ Ð¼Ð°ÑÐ¸Ð½Ð½Ð¾Ð³Ð¾ Ð¾Ð±ÑÑÐµÐ½Ð¸Ñ Ð´Ð»Ñ Ð°Ð½Ð°Ð»Ð¸Ð·Ð° ÑÐ¸Ð½ÑÐµÑÐ¸ÑÐµÑÐºÐ¾Ð¹ Ð±Ð°Ð·Ñ Ð´Ð°Ð½Ð½ÑÑ, Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½Ð¾Ð¹ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÐÐ¾Ð½ÑÐµ-ÐÐ°ÑÐ»Ð¾ (ÐÐ), Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ðµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐµÐ¹ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ° Ð¸ ÑÐµÑÐ¾ÑÐ¾Ð²Ð°ÑÐ¾ÑÑÐ¸ Ð¾Ñ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ ÑÐ¸Ð½ÑÐµÐ·Ð°, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ ÑÐ¾ÑÐ½Ð¾ÑÑÐ¸ Ð¼Ð¾Ð´ÐµÐ»Ð¸ Ð¸ Ð²ÑÐµÐ¼ÐµÐ½Ð¸ ÑÐ°ÑÑÑÑÐ° Ñ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸ÐµÐ¼ ÐÐ. ÐÑÐ½Ð¾Ð²Ð½ÑÐµ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð²ÐºÐ»ÑÑÐ°ÑÑ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÑ Ð°Ð»Ð³Ð¾ÑÐ¸ÑÐ¼Ð° Ð´Ð»Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ Ð°Ð½Ð°Ð»Ð¸ÑÐ¸ÑÐµÑÐºÐ¸Ñ Ð²ÑÑÐ°Ð¶ÐµÐ½Ð¸Ð¹, Ð¾Ð¿Ð¸ÑÑÐ²Ð°ÑÑÐ¸Ñ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐºÐ¾ÑÐ¾ÑÑÐ¸ ÑÐ¾ÑÑÐ° Ð¸ ÑÐµÑÐ¾ÑÐ¾Ð²Ð°ÑÐ¾ÑÑÐ¸ Ð¾Ñ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ ÑÐ¸Ð½ÑÐµÐ·Ð°, Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ°ÑÐ¸Ñ Ð²ÑÑÐ¾ÐºÐ¾Ð¹ ÑÐ¾ÑÐ½Ð¾ÑÑÐ¸ Ð¿ÑÐµÐ´ÑÐºÐ°Ð·Ð°Ð½Ð¸Ð¹ Ð¸ Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾Ðµ ÑÐ¾ÐºÑÐ°ÑÐµÐ½Ð¸Ðµ Ð²ÑÐµÐ¼ÐµÐ½Ð¸ ÑÐ°ÑÑÐµÑÐ¾Ð². ÐÐ±Ð»Ð°ÑÑÐ¸ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð²ÐºÐ»ÑÑÐ°ÑÑ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÑ Ð¸ Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÑÐ¾ÑÑÐ° ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð², ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ðµ Ð½Ð¾Ð²ÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð² Ð´Ð»Ñ Ð¼Ð¸ÐºÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸ Ð¸ ÑÑÐ½Ð´Ð°Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÐµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ. Ð Ð²ÑÐ²Ð¾Ð´Ðµ Ð¿Ð¾Ð´ÑÐµÑÐºÐ¸Ð²Ð°ÐµÑÑÑ ÑÑÑÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ð²Ð½Ð¾Ð³Ð¾ Ð¿Ð¾Ð´ÑÐ¾Ð´Ð° Ð¸ Ð¿Ð¾ÑÐµÐ½ÑÐ¸Ð°Ð» ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð² ÑÐ°Ð±Ð¾ÑÑ Ð´Ð»Ñ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð² Ð½Ð°ÑÐºÐµ Ð¸ ÑÐµÑÐ½Ð¸ÐºÐµ, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÐºÐ°Ð·ÑÐ²Ð°ÐµÑÑÑ Ð½Ð° Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð´Ð°Ð»ÑÐ½ÐµÐ¹ÑÐ¸Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ð¹ Ð´Ð»Ñ ÑÑÐ¾Ð²ÐµÑÑÐµÐ½ÑÑÐ²Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¼Ð¾Ð´ÐµÐ»Ð¸ Ð¸ ÐµÑ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾Ð¹ Ð¿ÑÐ¾Ð²ÐµÑÐºÐ¸.
description: The work is dedicated to developing a new approach to optimizing the growth processes of crystals and thin films. The importance of this work is driven by the need for precise control of material properties to create modern devices in microelectronics and other fields. The goal is to develop a new effective generative approach to describe the growth of crystals across all growth regimes and conditions with atomic precision. The methodology includes the use of machine learning to analyze a synthetic database obtained through Monte Carlo simulations to determine the dependencies of growth rate and surface roughness on synthesis conditions, as well as to compare the accuracy and computation time with direct Monte Carlo modeling. Key results include the development of an algorithm for obtaining analytical expressions that describe the dependencies of growth rate and roughness on synthesis conditions, demonstrating high prediction accuracy and significant reduction in computation time. Application areas include the development and optimization of crystal growth processes, creation of new materials for microelectronics, and fundamental research. The conclusion emphasizes the effectiveness of the generative approach and the potential of the results for application in science and technology, and outlines directions for further research to refine the model and its experimental verification.