title: Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ð³Ð»ÑÐ±Ð¾ÐºÐ¾Ð³Ð¾ Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð½Ð¾Ð³Ð¾ Ð¿Ð»Ð°Ð·Ð¼Ð¾Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÐºÑÐµÐ¼Ð½Ð¸Ñ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Development of technology for deep anisotropic plasma chemical etching of silicon
Creators: name: ÐÐ°Ð³Ð°ÐµÐ²Ð°, ÐÐ»Ð¸Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¿Ð»Ð°Ð·Ð¼Ð¾Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
Ð¼Ð¾Ð½Ð¾ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¸Ð¹ ÐºÑÐµÐ¼Ð½Ð¸Ð¹
Ð³Ð»ÑÐ±Ð¾ÐºÐ¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð½Ð¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
plasma chemical etching
monocrystalline silicon
seep etching
anisotropic etching

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ Ð¾ÑÐ½Ð¾Ð²Ð½ÑÑ ÑÐ¸Ð·Ð¸ÐºÐ¾-ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¸Ñ Ð·Ð°ÐºÐ¾Ð½Ð¾Ð¼ÐµÑÐ½Ð¾ÑÑÐµÐ¹ Ð¿ÑÐ¾ÑÐµÑÑÐ° ÑÐ¼ÐµÑÐ°Ð½Ð½Ð¾Ð³Ð¾ Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð³Ð»ÑÐ±Ð¾ÐºÐ¾Ð³Ð¾ Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð½Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¼Ð¾Ð½Ð¾ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð½Ð° ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ Ñ Ð¸Ð½Ð´ÑÐºÑÐ¸Ð²Ð½Ð¾ ÑÐ²ÑÐ·Ð°Ð½Ð½Ð¾Ð¹ Ð¿Ð»Ð°Ð·Ð¼Ð¾Ð¹ Ð¸ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐµ Ð½Ð° ÑÑÐ¾Ð¹ Ð¾ÑÐ½Ð¾Ð²Ðµ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ð³Ð»ÑÐ±Ð¾ÐºÐ¾Ð³Ð¾ Ð°Ð½Ð¸Ð·Ð¾ÑÑÐ¾Ð¿Ð½Ð¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÐºÑÐµÐ¼Ð½Ð¸Ñ. Ð ÑÐ²ÑÐ·Ð¸ Ñ ÑÑÐ¸Ð¼ Ð² ÑÐ¾Ð´Ðµ Ð²ÑÐ¿Ð¾Ð»Ð½ÐµÐ½Ð¸Ñ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½Ð¾ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ñ ÑÐ°ÑÐ°ÐºÑÐµÑ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð¾ÑÐ½Ð¾Ð²Ð½ÑÑ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² (Ð¼Ð¾ÑÐ½Ð¾ÑÑÑ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ°, Ð½Ð°Ð¿ÑÑÐ¶ÐµÐ½Ð¸Ðµ ÑÐ¼ÐµÑÐµÐ½Ð¸Ñ, Ð´Ð°Ð²Ð»ÐµÐ½Ð¸Ðµ Ð² ÑÐµÐ°ÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÐºÐ°Ð¼ÐµÑÐµ, ÑÐ°ÑÑÐ¾Ð´Ñ Ð³Ð°Ð·Ð¾Ð² SF6, C4F8, O2 Ð² ÑÐµÐ°ÐºÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ¼ÐµÑÐ¸) Ð½Ð° Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ (ÑÐºÐ¾ÑÐ¾ÑÑÑ, ÑÐµÐ»ÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ, Â«ÑÐ°ÑÑÑÐ°Ð²Â» ÑÑÑÑÐºÑÑÑÑ Ð¸ ÑÐ³Ð¾Ð» Ð½Ð°ÐºÐ»Ð¾Ð½Ð° ÑÑÐµÐ½ÐºÐ¸ Ð¿ÑÐ¾ÑÐ¸Ð»Ñ Ð¾ÐºÐ½Ð° ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ) Ð¿ÑÐ¸ ÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ð¸ Ð³Ð»ÑÐ±Ð¾ÐºÐ¸Ñ ÑÑÑÑÐºÑÑÑ Ð² ÐºÑÐµÐ¼Ð½Ð¸Ð¸. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð±ÑÐ» Ð¿ÑÐ¾Ð²ÐµÐ´ÑÐ½ ÐºÐ¾Ð½ÑÑÐ¾Ð»ÑÐ½ÑÐ¹ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½Ñ Ð¿Ð¾ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð½Ð¾Ð¹ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾Ð¹ ÑÑÑÑÐºÑÑÑÑ Ñ Ð°ÑÐ¿ÐµÐºÑÐ½ÑÐ¼ Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸ÐµÐ¼ Ð½Ðµ Ð¼ÐµÐ½ÐµÐµ 5:1 Ð¸ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ð° ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ñ ÑÐ¼ÐµÑÐ°Ð½Ð½Ð¾Ð³Ð¾ Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð½Ð¾Ð³Ð¾ Ð³Ð»ÑÐ±Ð¾ÐºÐ¾Ð³Ð¾ Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¼Ð¾Ð½Ð¾ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÐºÑÐµÐ¼Ð½Ð¸Ñ. Ð Ð°Ð±Ð¾ÑÐ° Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð° Ð½Ð° Ð±Ð°Ð·Ðµ Ð¤ÐÐÐÐ£ Â«Ð¡ÐÐ±ÐÐ£ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾Â», Ð³Ð´Ðµ ÑÐ¾Ð±Ð¸ÑÐ°Ð»Ð°ÑÑ Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð°Ñ ÑÐ°ÑÑÑ ÑÐ°ÐºÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð°. ÐÑÐ»Ð¸ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ñ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÑ Ð½Ð° ÑÑÑÐ°Ð½Ð¾Ð²ÐºÐµ Ð´Ð»Ñ Ð¿Ð»Ð°Ð·Ð¼Ð¾ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ð¾Ð² ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¹ ÑÐµÑÐ½Ð¸ÐºÐ¸ Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ Ð¿ÑÐ¾ÑÐµÐºÐ°Ð½Ð¸Ñ Ð¿ÑÐ¾ÑÐµÑÑÐ° ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ. ÐÐ·ÑÑÐµÐ½Ð¸Ðµ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² Ð¿Ð¾ÑÐ»Ðµ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¾ÑÑ Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ ÑÐºÐ°Ð½Ð¸ÑÑÑÑÐµÐ³Ð¾ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð³Ð¾ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð°. ÐÑÐ» Ð¿ÑÐ¾Ð²ÐµÐ´ÑÐ½ Ð°Ð½Ð°Ð»Ð¸Ð· ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÑ Ð´Ð°Ð½Ð½ÑÑ, Ð¿Ð¾ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ°Ð¼ ÐºÐ¾ÑÐ¾ÑÐ¾Ð³Ð¾ Ð±ÑÐ»Ð¾ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¾, ÐºÐ°ÐºÐ¸Ð¼ Ð¾Ð±ÑÐ°Ð·Ð¾Ð¼ ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸ÑÐµÑÐºÐ¸Ðµ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÑ Ð²Ð»Ð¸ÑÑÑ Ð½Ð° Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÑÑÑÐºÑÑÑÑ Ð² ÐºÑÐµÐ¼Ð½Ð¸Ð¸.
description: This work is devoted to the study of the main physicochemical laws of the process of mixed plasma chemical deep anisotropic etching of monocrystalline silicon on an inductively coupled plasma installation and the development on this basis of the technology of deep anisotropic high-speed etching of silicon to create membranes 5-20 Î¼m thick. In this regard, in this work, the nature of the influence of the main technological parameters (source power, bias voltage, pressure in the reaction chamber, the percentage of SF6/C4F8/O2 gases in the reaction mixture) on the etching parameters (rate, etching selectivity, undercutting of structures and the angle of inclination of the etching window profile) during the formation of deep structures in silicon were determined. As a result, a final experiment was carried out to obtain a vertical silicon structure with a depth of more than 300 microns and a technology of mixed directional deep plasma-chemical etching of monocrystalline silicon was developed in order to manufacture membranes for pressure sensors. The work was carried out in Peter the Great SPbPU, where a significant part of the factual material was collected. Experiments were carried out on an installa-tion for plasma-chemical etching of various materials of electronic technology under various conditions of the etching process. The analysis of the samples after the etching processes was carried out using a scanning electron microscope. Calcula-tions were carried out to show how technological parameters affect the result of silicon etching.