title: ÐÐ°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð½ÑÐ¹ Ð¾ÑÐ²ÐµÑÐ²Ð¸ÑÐµÐ»Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾Ð¹ ÐÐÐÐ-ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Directional coupler based on silicon CMOS-technology
Creators: name: Ð Ð°Ð¶ÐµÐ²Ð°, ÐÑÐµÐ½Ð¸Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð½ÑÐ¹ Ð¾ÑÐ²ÐµÑÐ²Ð¸ÑÐµÐ»Ñ
Ð¾ÑÑÐ°Ð¶Ð°ÑÐµÐ»ÑÐ½ÑÐ¹ ÑÐ°Ð·Ð¾Ð²ÑÐ°ÑÐ°ÑÐµÐ»Ñ
ÐÐÐÐ-ÑÐµÑ Ð½Ð¾Ð»Ð¾Ð³Ð¸Ñ
Ð¼Ð°ÑÑÐ¸ÑÐ° ÑÐ°ÑÑÐµÑÐ½Ð¸Ñ
directional coupler
reflective phase shifter
CMOS-technology
S-matrix

description: Ð¢ÐµÐ¼Ð° Ð²ÑÐ¿ÑÑÐºÐ½Ð¾Ð¹ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ: Â«ÐÐ°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð½ÑÐ¹ Ð¾ÑÐ²ÐµÑÐ²Ð¸ÑÐµÐ»Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾Ð¹ ÐÐÐÐ-ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¸Â». Ð¦ÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐ»Ð°ÑÑ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° Ð½Ð°Ð¿ÑÐ°Ð²Ð»ÐµÐ½Ð½Ð¾Ð³Ð¾ ÐºÐ²Ð°Ð´ÑÐ°ÑÑÑÐ½Ð¾Ð³Ð¾ Ð¾ÑÐ²ÐµÑÐ²Ð¸ÑÐµÐ»Ñ. ÐÐ°Ð½Ð½ÑÐ¹ Ð¾ÑÐ²ÐµÑÐ²Ð¸ÑÐµÐ»Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÐµÑÑÑ Ð´Ð»Ñ ÑÐµÐ°Ð»Ð¸Ð·Ð°ÑÐ¸Ð¸ Ð¾ÑÑÐ°Ð¶Ð°ÑÐµÐ»ÑÐ½ÑÑ ÑÐ°Ð·Ð¾Ð²ÑÐ°ÑÐ°ÑÐµÐ»ÐµÐ¹. ÐÑÐ»Ð¾ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¾ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ ÑÐµÑÑÑÐµÑ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ ÑÐµÐ°Ð»Ð¸Ð·Ð°ÑÐ¸Ð¹ ÑÑÐµÐ¼ Ð¾ÑÐ²ÐµÑÐ²Ð¸ÑÐµÐ»ÐµÐ¹ Ð½Ð° Ð¸Ð´ÐµÐ°Ð»ÑÐ½ÑÑ Ð¸ ÑÐµÐ°Ð»ÑÐ½ÑÑ ÑÐ¾ÑÑÐµÐ´Ð¾ÑÐ¾ÑÐµÐ½Ð½ÑÑ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ°Ñ Ð¸Ð· Ð±Ð¸Ð±Ð»Ð¸Ð¾ÑÐµÐºÐ¸ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²Ð¾Ð¹ ÐÐÐÐ-ÑÐµÑÐ½Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ñ ÑÐ°Ð·ÑÐµÑÐµÐ½Ð¸Ðµ 0,18 Ð¼ÐºÐ¼, ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ñ ÑÐ¾Ð¿Ð¾Ð»Ð¾Ð³Ð¸Ð¸, Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð° Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² ÑÑÐµÐ¼ Ð´Ð»Ñ ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ°ÑÐ¸Ð¸ Ð¿Ð°ÑÐ°Ð·Ð¸ÑÐ½ÑÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ¾Ð². ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð¸ ÑÐ°Ð·Ð±ÑÐ¾ÑÐ° Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ¾Ð² Ð½Ð° ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸ÐºÐ¸ ÑÑÐµÐ¼Ñ. ÐÐ° Ð¾ÑÐ½Ð¾Ð²Ðµ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð² Ð±ÑÐ»Ð¾ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¾ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ Ð²ÑÐµÑ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÐµÐ½Ð½ÑÑ ÑÑÐµÐ¼ Ð¾ÑÐ²ÐµÑÐ²Ð¸ÑÐµÐ»ÐµÐ¹. Ð¢Ð°ÐºÐ¶Ðµ Ð±ÑÐ»Ð° Ð²ÑÐ±ÑÐ°Ð½Ð° Ð¿ÑÐµÐ¸Ð¼ÑÑÐµÑÑÐ²ÐµÐ½Ð½Ð°Ñ ÑÑÐµÐ¼Ð°, Ð´Ð»Ñ ÐºÐ¾ÑÐ¾ÑÐ¾Ð¹ Ð¿Ð¾ÑÐ»Ðµ Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ð¸, Ð½ÐµÐ¾Ð±ÑÐ¾Ð´Ð¸Ð¼Ð¾Ð¹ Ð¸Ð·-Ð·Ð° Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð¿Ð°ÑÐ°Ð·Ð¸ÑÐ½ÑÑ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² ÑÐ¾Ð¿Ð¾Ð»Ð¾Ð³Ð¸Ð¸, ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ Ð¾ÑÑÐ°Ð¶ÐµÐ½Ð¸Ñ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÐµÑ Ð½Ðµ ÑÑÐ¶Ðµ -18 Ð´Ð, Ð¿Ð°ÑÐ°Ð¼ÐµÑÑ S14 Ð½Ðµ ÑÑÐ¶Ðµ -20 Ð´Ð. Ð Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐ°Ð±Ð¾ÑÐ¸Ñ ÑÐ°ÑÑÐ¾Ñ Ð¿Ð¾ÑÐµÑÐ¸ Ð´Ð¾ÑÑÐ¸Ð³Ð°ÑÑ 2,2 Ð´Ð, Ð° Ð¾ÑÐ¸Ð±ÐºÐ¸ Ð¿Ð¾ Ð°Ð¼Ð¿Ð»Ð¸ÑÑÐ´Ðµ Ð¸ Ð¿Ð¾ ÑÐ°Ð·Ðµ ÑÐ°Ð²Ð½Ñ -0,14 Ð´Ð Ð¸ 1,0 Ð³ÑÐ°Ð´ÑÑ ÑÐ¾Ð¾ÑÐ²ÐµÑÑÑÐ²ÐµÐ½Ð½Ð¾. ÐÐ»Ð¸ÑÐ½Ð¸Ðµ ÑÐ°Ð·Ð±ÑÐ¾ÑÐ° Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ¾Ð² Ð¿ÑÐ¸ ÑÐµÐ°Ð»Ð¸Ð·Ð°ÑÐ¸Ð¸ Ð² Ð´Ð°Ð½Ð½Ð¾Ð¼ ÑÐ»ÑÑÐ°Ðµ Ð½Ð°Ð¸Ð¼ÐµÐ½ÑÑÐµÐµ, Ð° Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð½ÐµÐ·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ Ð´Ð»Ñ Ð²ÑÐµÑ ÑÐ°ÑÑÐ¼Ð¾ÑÑÐµÐ½Ð½ÑÑ ÑÑÐµÐ¼.
description: The subject of the graduate qualification work is âDirectional coupler based on silicon CMOS technologyâ. The purpose of the work was to develop a directional quadrature coupler. This coupler is used to implement reflective-type phase shifters. The coupler circuits were modeled on real and ideal lumped elements from the silicon CMOS technology library with a resolution of 0.18 Î¼m. Topologies for directional coupler circuits have been developed. The parameters of the circuits were optimized to compensate for the parasitic parameters of the elements. The influence of temperature and dispersion of element parameters on circuit characteristics is investigated. Based on the results obtained, a comparison was made of all the presented coupler circuits. The preferred scheme was also chosen for which, after optimization, necessary due to the influence of parasitic parameters of the topology, the reflection coefficient is less than -18 dB and the parameter S14 is less than -20 dB. In the range of operating frequencies, the losses are 2.2 dB, and the amplitude and phase errors are -0.14 dB and 1.0 degrees, respectively. The influence of the dispersion of the parameters of the elements during implementation in this case is the smallest, and the influence of temperature is insignificant for all the schemes considered.