title: Ð¦Ð¸ÑÑÐ¾Ð²Ð°Ñ Ð¼Ð¾Ð´ÐµÐ»Ñ Ð¼Ð¾Ð½Ð¾Ð»Ð¸ÑÐ½Ð¾Ð¹ Ð¸Ð½ÑÐµÐ³ÑÐ°Ð»ÑÐ½Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾ÑÑ ÐµÐ¼Ñ Ð¼Ð°Ð»Ð¾ÑÑÐ¼ÑÑÐµÐ³Ð¾ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð¡ÐÐ§
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Digital model of the monolithic integrated circuit of low-noise microwave amplifier
Creators: name: ÐÐµÐ·ÑÑÐºÐ¾Ð², ÐÐ°ÑÐ¸Ð»Ð¸Ð¹
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: Ð£ÑÐ¸Ð»Ð¸ÑÐµÐ»Ð¸
ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ ÑÑÐ¼Ð°
ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½Ñ Ð¾ÑÑÐ°Ð¶ÐµÐ½Ð¸Ñ
ÑÐ¾Ð³Ð»Ð°ÑÑÑÑÐ°Ñ ÑÐµÐ¿Ñ
ÐºÑÐ¸ÑÐµÑÐ¸Ð¸ ÑÑÐ°Ð±Ð¸Ð»ÑÐ½Ð¾ÑÑÐ¸
noise figure
reflection coefficient
matching network
stability criteria

description: ÐÐ±ÑÐµÐºÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ â ÐÐ°Ð»Ð¾ÑÑÐ¼ÑÑÐ¸Ð¹ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ GaAs. Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ° Ð¼Ð°Ð»Ð¾ÑÑÐ¼ÑÑÐµÐ³Ð¾ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ GaAs Ñ Ð¼Ð¸Ð½Ð¸Ð¼Ð°Ð»ÑÐ½ÑÐ¼ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ¾Ð¼ ÑÑÐ¼Ð°. ÐÐ½Ð°Ð»Ð¸Ð· ÑÐ¾Ð²ÑÐµÐ¼ÐµÐ½Ð½ÑÑ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐ¾Ðº Ð² Ð¾Ð±Ð»Ð°ÑÑÐ¸ Ð¼Ð°Ð»Ð¾ÑÑÐ¼ÑÑÐ¸Ñ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ (ÐÐ¨Ð£) Ð½Ð° Ð±Ð°Ð·Ðµ Ð°ÑÑÐµÐ½Ð¸Ð´Ð° Ð³Ð°Ð»Ð»Ð¸Ñ (GaAs) Ð²ÑÑÐ²Ð¸Ð» ÑÑÐ´ ÐºÐ»ÑÑÐµÐ²ÑÑ ÑÐ°ÐºÑÐ¾ÑÐ¾Ð², Ð²Ð»Ð¸ÑÑÑÐ¸Ñ Ð½Ð° Ð²ÑÐ±Ð¾Ñ ÑÐ¾Ð¿Ð¾Ð»Ð¾Ð³Ð¸Ð¸ Ð¸ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð´Ð»Ñ Ð¿ÑÐ¾ÐµÐºÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÐÐ¨Ð£. ÐÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¾ Ð¿ÑÐµÐ´Ð¿Ð¾ÑÑÐµÐ½Ð¸Ðµ Ð±Ð°Ð»Ð°Ð½ÑÐ½ÑÑ ÑÑÐµÐ¼ Ð´Ð»Ñ Ð¿ÑÐ¸Ð»Ð¾Ð¶ÐµÐ½Ð¸Ð¹, ÑÑÐµÐ±ÑÑÑÐ¸Ñ Ð²ÑÑÐ¾ÐºÐ¸Ñ Ð·Ð½Ð°ÑÐµÐ½Ð¸Ð¹ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ° ÑÑÐ¸Ð»ÐµÐ½Ð¸Ñ Ð² ÑÐ¸ÑÐ¾ÐºÐ¾Ð¼ Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ ÑÐ°ÑÑÐ¾Ñ. Ð¢ÐµÐ½Ð´ÐµÐ½ÑÐ¸Ñ Ðº Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ ÑÐ°ÑÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð½ÑÑ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ð²ÑÑÐ²Ð»ÐµÐ½Ð° Ð² ÑÑÐµÑÐµ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸, Ð³Ð´Ðµ Ð²Ð°Ð¶ÐµÐ½ Ð²ÑÑÐ¾ÐºÐ¸Ð¹ Ð²ÑÑÐ¾Ð´Ð½Ð¾Ð¹ ÑÑÐ¾Ð²ÐµÐ½Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸. Ð¡ÑÐµÐ¼Ð° ÐÐ¨Ð£ Ñ Ð¾ÑÑÐ¸ÑÐ°ÑÐµÐ»ÑÐ½Ð¾Ð¹ Ð¾Ð±ÑÐ°ÑÐ½Ð¾Ð¹ ÑÐ²ÑÐ·ÑÑ Ð¾ÑÐµÐ½ÐµÐ½Ñ ÐºÐ°Ðº Ð±Ð°Ð»Ð°Ð½Ñ Ð¼ÐµÐ¶Ð´Ñ ÑÑÐ¸Ð»ÐµÐ½Ð¸ÐµÐ¼ Ð¸ ÑÑÐ¾Ð²Ð½ÐµÐ¼ ÑÑÐ¼Ð°, ÑÑÐ¾ Ð´ÐµÐ»Ð°ÐµÑ Ð¸Ñ Ð¿ÑÐ¸Ð²Ð»ÐµÐºÐ°ÑÐµÐ»ÑÐ½ÑÐ¼Ð¸ Ð´Ð»Ñ Ð±ÐµÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½ÑÑ Ð¿ÑÐ¸Ð»Ð¾Ð¶ÐµÐ½Ð¸Ð¹. ÐÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ñ ÐºÐ»ÑÑÐµÐ²ÑÐµ Ð²ÐµÐ»Ð¸ÑÐ¸Ð½Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð², ÑÐ°ÐºÐ¸Ðµ ÐºÐ°Ðº Ð¼Ð¸Ð½Ð¸Ð¼Ð¸Ð·Ð°ÑÐ¸Ñ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ° ÑÑÐ¼Ð° Ð¿ÑÐ¸ ÑÐ¾ÑÑÐ°Ð½ÐµÐ½Ð¸Ð¸ Ð²ÑÑÐ¾ÐºÐ¾Ð³Ð¾ ÑÑÐ¸Ð»ÐµÐ½Ð¸Ñ, ÐºÐ°Ðº Ð¿ÑÐ¸Ð¾ÑÐ¸ÑÐµÑÐ½ÑÐµ Ð¿ÑÐ¸ Ð¿ÑÐ¾ÐµÐºÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¸Ð¸. Ð Ð°Ð·ÑÐ°Ð±Ð¾ÑÐ°Ð½Ñ ÑÑÐµÐ¼Ñ Ð±Ð°Ð»Ð°Ð½ÑÐ½Ð¾Ð³Ð¾ Ð¸ Ð¼Ð½Ð¾Ð³Ð¾ÐºÐ°ÑÐºÐ°Ð´Ð½Ð¾Ð³Ð¾ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹, Ð±ÑÐ»Ð¾ Ð¿ÑÐ¾Ð¸Ð·Ð²ÐµÐ´ÐµÐ½Ð¾ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ Ð¸Ñ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸ÑÑÐ¸Ðº Ð² ÑÐ°Ð±Ð¾ÑÐµÐ¹ Ð¿Ð¾Ð»Ð¾ÑÐµ ÑÐ°ÑÑÐ¾Ñ. ÐÑÐ»Ð¸ ÑÐ¾ÑÑÐ°Ð²Ð»ÐµÐ½Ñ ÑÐ¾Ð¿Ð¾Ð»Ð¾Ð³Ð¸Ð¸ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»ÐµÐ¹ Ð¸ Ð¾ÑÐµÐ½ÐµÐ½Ð¾ Ð¿Ð°ÑÐ°Ð·Ð¸ÑÐ½Ð¾Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð¼Ð¸ÐºÑÐ¾Ð¿Ð¾Ð»Ð¾ÑÐºÐ¾Ð²ÑÑ Ð»Ð¸Ð½Ð¸Ð¹, ÑÐ¾ÐµÐ´Ð¸Ð½ÑÑÑÐ¸Ñ ÑÐ»ÐµÐ¼ÐµÐ½ÑÑ ÑÑÐ¸Ð»Ð¸ÑÐµÐ»Ñ.
description: The object of research â Low-Noise Amplifier based on GaAs. The purpose of the study â development of a low-noise amplifier based on GaAs with a minimal noise figure. Analysis of modern developments in the field of low-noise amplifiers (LNAs) based on gallium arsenide (GaAs) has revealed several key factors that influence the choice of topology and parameters for LNA design. A preference for balanced schemes has been identified for applications that require high gain values across a wide frequency range. The trend towards the use of distributed amplifiers has been observed in the field of power amplifiers, where a high output power level is important. LNAs with negative feedback have been assessed as a balance between gain and noise level, making them attractive for wireless applications. Key parameter magnitudes, such as minimizing the noise figure while maintaining high gain, have been identified as priorities in the design process. Schemes of balanced and multi-stage amplifiers have been developed; their characteristics were compared within the working frequency band. The topologies of the amplifiers were compiled, and the parasitic effects of the microstrip lines connecting the amplifier elements were assessed.