title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ Ð¼ÐµÑÐ°Ð»Ð»-ÑÑÐ¸Ð¼ÑÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð½Ð° ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÑ Ð½Ð°Ð½Ð¾Ð½Ð¸ÑÐµÐ¹
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Investigation of the influence of the conditions of metal-assisted chemical etching of silicon on the properties of silicon nanowires
Creators: name: ÐÑÐ¸Ð³Ð¾Ð´Ð°, ÐÑÐ¸ÑÑÐ¸Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð¼ÐµÑÐ°Ð»Ð»-ÑÑÐ¸Ð¼ÑÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ðµ Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
ÐºÑÐµÐ¼Ð½Ð¸Ð¹
ÑÐµÑÐµÐ±ÑÐ¾
ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÐµ Ð½Ð°Ð½Ð¾Ð½Ð¸ÑÐ¸
Ð¼Ð½Ð¾Ð³Ð¾ÑÐ³Ð»Ð¾Ð²Ð°Ñ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð°Ñ ÑÐ»Ð»Ð¸Ð¿ÑÐ¾Ð¼ÐµÑÑÐ¸Ñ
metal-assisted chemical etching
silicon
silver
silicon nanowires
spectroscopic ellipsometry

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description: This work is devoted to producing of silicon nanowires by the method of metal-assisted chemical etching of silicon (MACE) and to studying their properties. The research set the following goals: 1. Studying the conditions for the formation of silicon nanostructures at different stages of MACE. 2. Carrying out one-stage and two-stage types of MACE and obtaining silicon nanowires. 3. Studying the morphology and optical properties of the obtained structures using scanning electron microscopy and spectroscopic ellipsometry. As a result of the experiments, vertical and inclined silicon nanowires with a large aspect ratio of the cross-section to the height (from 100 to 550 nm - height, from 10 to 30 nm - cross-section) were obtained. Using SEM images, the thicknesses of the obtained layers of silicon nanowires were revealed, due to which the etching rates were calculated. To process the experimentally obtained spectra of ellipsometric parameters (Î¨ and Î), a three-layer model of silicon nanowires was proposed, with the help of which the filling factor of silicon relative to air in each layer and layer thicknesses were determined. As a result of fitting using this model, a good agreement between the experimental and calculated data was obtained.