cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Asymptotic dimension and small-cancellation for hierarchically hyperbolic spaces and groups
Creators: name: Behrstock, Jason
name: Hagen, Mark F.
name: Sisto, Alessandro
Publisher: name: arXiv
Year: 2015
Subjects: subject: Group Theory (math.GR)
subject: Geometric Topology (math.GT)
subject: Metric Geometry (math.MG)
subject: FOS: Mathematics

description: We prove that all hierarchically hyperbolic spaces have finite asymptotic dimension and obtain strong bounds on these dimensions. One application of this result is to obtain the sharpest known bound on the asymptotic dimension of the mapping class group of a finite type surface: improving the bound from exponential to at most quadratic in the complexity of the surface. We also apply the main result to various other hierarchically hyperbolic groups and spaces. We also prove a small-cancellation result namely: if $G$ is a hierarchically hyperbolic group, $H\leq G$ is a suitable hyperbolically embedded subgroup, and $N\triangleleft H$ is "sufficiently deep" in $H$, then $G/\langle\langle N\rangle\rangle$ is a relatively hierarchically hyperbolic group. This new class provides many new examples to which our asymptotic dimension bounds apply. Along the way, we prove new results about the structure of HHSs, for example: the associated hyperbolic spaces are always obtained, up to quasi-isometry, by coning off canonical coarse product regions in the original space (generalizing a relation established by Masur--Minsky between the complex of curves of a surface and Teichmüller space).
description: Minor revisions in Section 6. This is the version accepted for publication
Water Soluble Aluminum Paste Using Polyvinyl Alcohol for Silicon Solar Cells
Creators: name: Ashikaga, T.
name: Noguchi, T.
name: Uzum, A.
name: Matsuoka, T.
name: Nakanishi, T.
name: Ito, S.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1410-1412
description: Screen-printing aluminum is still dominantly used in solar cell fabrication process. However, its
production is not so simple and has some drawbacks including the use of toxic materials and the complexity of the
process. Ethyl cellulose is one of the main contents in aluminum pastes that need dichloromethane for cleaning
process which is so toxic and threatful for human body. Moreover saponification is necessary for the synthesis, which
can be performed by NaOH and deteriorate the semiconductor characteristics. Developing new materials and
processes is necessary in order to overcome these difficulties. In this work, a new and cost-effective, non-toxic
aluminum paste was introduced. Polyvinyl alcohol was used as a soluble polymer that can be synthesized without the
saponification and also is soluble in water. Three different pastes were developed using different recipes with various
particle sizes and various amounts of following materials. Evaluation of the pastes was carried out by Scanning
Electron Microscope (SEM) image analysis and fabricating silicon solar cells using each aluminum paste. Solar cells
were fabricated on non-textured wafers and without any antireflection coatings with conversion efficiency of 14.0%.
High Efficiency Triple Junction Thin Film Silicon Solar Cells with Optimized SubCells, Light Trapping and Tunnel Junction
Creators: name: Zhang, X.
name: Liu, B.
name: Bai, L.
name: Huang, Q.
name: Ni, J.
name: Wei, C.
name: Zhang, D.K.
name: Sun, J.
name: Chen, X.-L.
name: Ren, H.
name: Hou, G.
name: Wang, G.-C.
name: Zhao, Y.
Publisher: name: WIP
Year: 2014
Subjects: THIN FILM SOLAR CELLS
Silicon-based Thin Film Solar Cells

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1448-1451
description: We present the latest process in the performance improvement of pin-type a-Si:H/a-SiGe:H/μc-Si:H
triple junction solar cell and corresponding single junction solar cells in this paper. Based on the wet-etched
sputtering ZnO:Al substrate with optimized surface morphology and photo-electrical material properties, after
adjusting individual single junction solar cells which would be utilized in triple junction solar cells with different
optimization techniques, we pay close attention to the optimization of tunnel recombination junctions (TRJs). By
means of the optimization of individual a-Si:H/a-SiGe:H and a-SiGe:H/μc-Si:H tandem solar cell, we compensated
the Voc loss at a-Si:H/a-SiGe:H TRJ resulting from a high p type μc-Si:H activation energy. Combining the optimized
single junction solar cells and top/middle, middle/bottom TRJs with little electrical losses, an initial efficiency of over
16% was achieved for pin-type a-Si:H/a-SiGe:H/μc-Si:H triple junction solar cell.
Evaluation of Interface Recombination Induced by Fire-through Ag Past for High Open Circuit Voltage
Creators: name: Aoki, M.
name: Ohshita, Y.
name: Takahashi, T.
name: Tachibana, T.
name: Suminta, I.
name: Takigawa, Y.
name: Iwata, N.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1368-1370
description: Novel silver (Ag) paste is developed for fabricating the higher conversion efficiency crystalline silicon
solar cells. The high open circuit voltage (649 mV) and high fill factor (0.786) for the high sheet resistance emitter
(130 Ω/sq) are obtained without the selective emitter structure. Recombination losses at the interface between the
crystalline silicon and Ag lines are low by using our novel paste, which are evaluated by the applied front-side grid
method. When the conventional pastes are used, the dark saturation current density J01 is increased as increasing the
contact area. On the other hand, J01 and J02 do not increase in the case of novel paste. This indicates that the minority
carrier recombination at the interface is suppressed, and that the small amount of Ag diffused into the crystalline
silicon. The interface structure obtained is completely different from that of conventional “fire-though” ones, that is,
SiOx layer contained with fine Ag paste.
PERC Solar Cells: Comparison of Al Precursors for Rear-Side Surface Passivation
Creators: name: Zauner, A.
name: Lebreton, F.
name: Saint-Cast, P.
name: Hofmann, M.
name: Letellier, J.-Y.
name: Urrejola, E.
name: Marot, Y.
name: Gouhinec, F.
name: Charpentier, C.
name: Hong, J.
name: Coeuret, F.
name: Pouliquen, S.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1413-1416
description: PERC cells were fabricated using two different aluminum precursors for the Al2O3 rear surface passivation layer.
TMA and non-pyrophoric DMAi based Al2O3 layers were implemented in p-type Cz-Si PERC for rear surface
passivation. The Al2O3 layers deposition was performed by ALD, PEALD and PECVD. The best conversion
efficiency was obtained for the cells using a 10 nm DMAi based Al2O3 layer, deposited by PECVD (20.1 %). The
TMA-Al2O3 based PERC cells achieved nearly identical conversion efficiencies (max 20.0 %).
Towards Industrial Low-Temperature Metallization Methods for Front-Junction n-Type Solar Cells
Creators: name: Yuan, Y.
name: Sheng, J.
name: Sheng, Y.
name: Cui, Y.
name: Cai, W.
name: Wang, W.
name: Zhang, C.
name: Feng, Z.
name: Verlinden, P.J.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1377-1379
description: A new metallization method for front-junction n-type solar cells is presented. A Ni/Ag forward bias
plating technology was developed for the boron-doped front emitter, while Al evaporation was used for phosphorousdoped
Back Surface Field (BSF). The Ni/Ag metallization scheme is intended to be replaced by a Ni/Cu/Sn
metallization scheme in future. The low work function of Al and the high work function of Ni enable good contacts
on phosphorous-doped BSF and boron-doped emitter respectively. This new metallization process does not require
any high-temperature heat treatment, and the cost is lower than the Ag/Al and Ag screen printed metallisation
methods that are currently commonly used for n-type solar cells. With the new metallization method, a large cell
(12.5×12.5 cm2) with an in-house measured efficiency of 20.03% was obtained.
FAST-PT: a novel algorithm to calculate convolution integrals in cosmological perturbation theory
Creators: name: McEwen, Joseph E.
name: Fang, Xiao
name: Hirata, Christopher M.
name: Blazek, Jonathan A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: FOS: Physical sciences

description: We present a novel algorithm, FAST-PT, for performing convolution or mode-coupling integrals that appear in nonlinear cosmological perturbation theory. The algorithm uses several properties of gravitational structure formation -- the locality of the dark matter equations and the scale invariance of the problem -- as well as Fast Fourier Transforms to describe the input power spectrum as a superposition of power laws. This yields extremely fast performance, enabling mode-coupling integral computations fast enough to embed in Monte Carlo Markov Chain parameter estimation. We describe the algorithm and demonstrate its application to calculating nonlinear corrections to the matter power spectrum, including one-loop standard perturbation theory and the renormalization group approach. We also describe our public code (in Python) to implement this algorithm, including the applications described here.
description: 24 pages, 5 figures, 2 tables. fig.1 corrected. changes made. matched with the journal version. Code available at https://github.com/JoeMcEwen/FAST-PT
Metallization of Rear Local Point-Contacts for Industrial PERC Solar Cells
Creators: name: Chen, D.
name: Deng, W.
name: Li, H.
name: Dong, J.
name: Ye, F.
name: Chen, Y.
name: Zhu, H.
name: Zhong, M.
name: Zhang, Y.
name: Feng, Z.
name: Verlinden, P.J.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1383-1386
description: Metallization of rear point-contacts with a modified Al paste is reported for industrial PERC solar cells.
The properties of point-contacts were investigated with a detailed study of Al paste, firing process, point-contact
pitch as well as point-contact size. With the modified Al paste, it was demonstrated that void-free point-contacts
could be obtained, and the point-contact depth could be controlled within a range of 13μm to 55μm, and Local Back
Surface Field was 1.5-2.0μm thicker than that with a normal Al paste. Compared to cells with normal Al paste, the
average efficiency of cells with modified Al paste was 0.16%abs higher.
Im Auftrag des Evang. Missionswerks in Deuschland und der Basler Mission (Hrsg.): Sinfonia Oecumenica
Creators: name: Eber, Jochen
Publisher: name: European journal of theology
Year: 2024

description: European journal of theology, V. 10 N. 1 (2001): European Journal of Theology, Band 10, Heft 1
Failure Mechanisms for Solar Cells with Laser Doped Selective Emitter and Plated Ni-Cu Metal Contacts
Creators: name: Hördt, W.
name: Kluska, S.
name: Geisler, C.
name: Hopman, S.
name: Bartsch, J.
name: Mondon, A.
name: Glatthaar, M.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1324-1327
description: Al-BSF solar cells with a laser doped selective emitter and plated Ni-Cu contacts are an attractive
approach for industrial fabrication. Yet the contact adhesion of the plated Ni-Cu contacts due to diffusion barriers in
the contact area and electrical stability against tempering induced non-ohmic Ni shunts are two main challenges for
this cell concept. This work presents failure mechanisms of laser doped solar cells. Microscopic characterization
analyzes process induced defects separately, which result in poor contact adhesion and non-ohmic shunting. A
process route is presented, which yields in solar cells with pseudo fill factors above 80 % and a sufficient contact
adhesion of 1 N/mm.
Error Propagation Dynamics of PIV-based Pressure Field Calculations: How well does the pressure Poisson solver perform inherently?
Creators: name: Pan, Zhao
name: Whitehead, Jared
name: Thomson, Scott
name: Truscott, Tadd
Publisher: name: arXiv
Year: 2016
Subjects: subject: Fluid Dynamics (physics.flu-dyn)
subject: FOS: Physical sciences

description: Obtaining pressure field data from particle image velocimetry (PIV) is an attractive technique in fluid dynamics due to its noninvasive nature. The application of this technique generally involves integrating the pressure gradient or solving the pressure Poisson equation using a velocity field measured with PIV. However, very little research has been done to investigate the dynamics of error propagation from PIV-based velocity measurements to the pressure field calculation. Rather than measure the error through experiment, we investigate the dynamics of the error propagation by examining the Poisson equation directly. We analytically quantify the error bound in the pressure field, and are able to illustrate the mathematical roots of why and how the Poisson equation based pressure calculation propagates error from the PIV data. The results show that the error depends on the shape and type of boundary conditions, the dimensions of the flow domain, and the flow type.
High Productivity Laser Ablation System for Volume Production of PERC Solar Cells
Creators: name: Zheng, Y.
name: Franklin, J.
name: Chan, A.
name: Yan, F.
name: Rapolu, K.
name: Wang, D.
name: Mungekar, H.
name: Wijekoon, K.
name: Zhang, L.
name: Wang, R.
name: Ponnekanti, H.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1380-1382
description: For the Passivated-Emitter-and-Rear-Contact (PERC) cell metallization process, laser ablation is the
key enabling technology to remove the backside dielectric films from certain areas to form metal contacts. This paper
presents a high performance and high productivity system suitable for industrial volume production of PERC cells.
The laser source selection is the first step in developing a method to quantitatively compare laser damage from
various laser wavelengths and pulse energy and pulse duration. The laser contact metallization processes were
optimized through laser opening size, laser pattern and Al paste printing and firing. Combining CVD rear passivation
and laser ablation solution, 655mV and 20.7% industrial PERC cells were achieved.
Bilanzierung des lymphozytären Energiestoffwechsels von Patienten mit entzündlich-rheumatischen Erkrankungen
Creators: name: Kuhnke, Antje
Publisher: name: Humboldt-Universität zu Berlin, Medizinische Fakultät - Universitätsklinikum Charité
Year: 2001
Subjects: subject: Aktivität rheumatischer Erkrankungen
subject: PBMC (periphere mononukleäre Zellen des Blutes)
subject: Sauerstoffverbrauch
subject: ATP-verbrauchende Prozesse
subject: PBMC
subject: activity of rheumatic diseases
subject: oxygen consumption
subject: ATP-consuming processes
subject: 610 Medizin
subject: 33 Medizin
subject: YC 8900

description: Ziel: war die Untersuchung, ob sich die Aktivität entzündlich rheumatischer Erkrankungen in ausgewählten Parametern des Energiestoffwechsels von PBMC (periphere mononukleäre Zellen des Blutes) reflektiert. Methoden: Es wurden die PBMC von 30 gesunden Probanden und von 28 Patienten (16 inaktiv; 12 aktiv) mit einer Rheumatoiden Arthritis, einem Systemischen Lupus Erythematodes oder einer Vaskulititis präpariert. Aktive Patienten wurden vor und 4-5 Tage nach Beginn einer hochdosierten Glukokortikoidtherapie untersucht. Es wurde der Sauerstoffverbrauch, der Verbrauch an Sauerstoff auf einen definierten mitogenen Stimulus und einzelne Hauptenergieverbrauchende Prozesse mittels der Clark Elektrode bestimmt. Ergebnisse: Für den Sauerstoffverbrauch konnte ein geschlechtsunabhängiger Normalwert von 3.84 +/- 0.1 (alle Werte in nmol O2/min pro 10^7 Zellen) ermittelt werden. Bei inaktiven Patienten war der Sauerstoffverbrauch mit 4.18 +/- 0.28 leicht, bei aktiven Patienten mit 4.82 +/- 0.33 jedoch deutlich und signifikant (p0.05). Desweiteren wurde in stimulierten PBMC von aktiven Patienten eine signifikante Verminderung des Sauerstoffverbrauches für Kationentransportprozesse und Proteinsynthese nachgewiesen. Unter einer 4-5tägigen hochdosierten Glukokortikoidtherapie normalisierten sich die genannten Parameter wieder. Zusammenfassung: In dieser Studie konnte zum ersten Mal gezeigt werden, dass sich Parameter des zellulären Energiestoffwechsels von PBMC zur Einschätzung von Aktivität und Therapieerfolg entzündlich rheumatischer Erkrankungen eignen.
description: Objective: To investigate whether the activity of rheumatic diseases is reflected by selected parameters of cellular energy metabolism of peripheral blood mononuclear cells (PBMC). Methods: PBMC were prepared from 30 healthy volunteers and from 28 patients (16 inactive; 12 active) with rheumatoid arthritis, systemic lupus erythematosus or vasculitis. Active patients were examined prior to and 4-5 days after starting, restarting or increasing the dose of corticosteroids. Cellular oxygen consumption (as a measure of ATP production), bioenergetic cellular response to a defined stimulus and main ATP-consuming processes were measured using a Clark electrode. Results: A sex-independent normal value for oxygen consumption of 3.84 +/-0.1 (all data in nmol O2/min per 10^7 cells) was found. In inactive patients the respiration rate was slightly increased at 4.18 +/- 0.28, but was significantly increased in active patients to 4.82 +/- 0.33 (p
Finite strain FFT-based non-linear solvers made simple
Creators: name: de Geus, T. W. J.
name: Vondrejc, J.
name: Zeman, J.
name: Peerlings, R. H. J.
name: Geers, M. G. D.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Numerical Analysis (math.NA)
subject: FOS: Mathematics

description: Computational micromechanics and homogenization require the solution of the mechanical equilibrium of a periodic cell that comprises a (generally complex) microstructure. Techniques that apply the Fast Fourier Transform have attracted much attention as they outperform other methods in terms of speed and memory footprint. Moreover, the Fast Fourier Transform is a natural companion of pixel-based digital images which often serve as input. In its original form, one of the biggest challenges for the method is the treatment of (geometrically) non-linear problems, partially due to the need for a uniform linear reference problem. In a geometrically linear setting, the problem has recently been treated in a variational form resulting in an unconditionally stable scheme that combines Newton iterations with an iterative linear solver, and therefore exhibits robust and quadratic convergence behavior. Through this approach, well-known key ingredients were recovered in terms of discretization, numerical quadrature, consistent linearization of the material model, and the iterative solution of the resulting linear system. As a result, the extension to finite strains, using arbitrary constitutive models, is at hand. Because of the application of the Fast Fourier Transform, the implementation is substantially easier than that of other (Finite Element) methods. Both claims are demonstrated in this paper and substantiated with a simple code in Python of just 59 lines (without comments). The aim is to render the method transparent and accessible, whereby researchers that are new to this method should be able to implement it efficiently. The potential of this method is demonstrated using two examples, each with a different material model.
Ultrafine Front Side Metallization on Silicon Solar Cells by Industrial Dispensing Technology
Creators: name: Pospischil, M.
name: Kuchler, M.
name: Klawitter, M.
name: Rodriguez, C.
name: Padilla, A.
name: Efinger, R.
name: Gentischer, H.
name: König, M.
name: Hörteis, M.
name: Wende, L.
name: Doll, O.
name: Clement, F.
name: Biro, D.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1304-1306
description: This study presents a new developed, inline applicable dispensing platform that is equipped with an advanced
version of previously introduced parallel dispensing print heads. At process speeds of up to 700 mm·s-1 and a substantially
improved process stability, recent cell results on industrial 90 Ω/sq. emitters showed an efficiency increase of up to +0.4%abs.
in comparison to standard single screen printing technology. Top values of 19.4% using standard Al-BSF technology were
reached in this study. A key improvement of the technology is the new ability to process certain metal pastes originally
designed for screen printing applications and thus keep in track with fast emerging paste development. Successfully evaluated
screen printing pastes then can be rheologically adapted in order to reach ultrafine contact fingers at high aspect ratios and
extract the whole advantage of this non-contacting printing technology.
Semi device independence of the BB84 protocol
Creators: name: Woodhead, Erik
Publisher: name: arXiv
Year: 2015
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: The BB84 quantum key distribution protocol is semi device independent in the sense that it can be shown to be secure if just one of the users' devices is restricted to a qubit Hilbert space. Here, we derive an analytic lower bound on the asymptotic secret key rate for the entanglement-based version of BB84 assuming only that one of the users performs unknown qubit POVMs. The result holds against the class of collective attacks and reduces to the well known Shor-Preskill key rate for correlations corresponding to the ideal BB84 correlations mixed with any amount of random noise.
Influence of Rear-Side Passivation on Solar Cell Performance of Bosco Solar Cells
Creators: name: Krauß, K.
name: Fertig, F.
name: Greulich, J.
name: Clement, F.
name: Biro, D.
name: Preu, R.
name: Rein, S.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1300-1303
description: The recently introduced BOSCO (“Both Sides Collecting and Contacted”) solar cell exhibits emitter regions on front and rear side, which are interconnected by diffused vias. This allows double-sided collection of carriers in the base and bifacial operation while supporting standard module interconnection technology. Since the BOSCO cell’s rear side exhibits p-doped as well as highly n+-doped surfaces the dielectric used as rear-side passivation needs to be suitable to passivate both polarities. This work compares the passivation of the BOSCO cell’s rear side by a PECVD aluminium oxide (AlOx) and a thermally grown silicon oxide (SiO2). A difference in efficiency of up to  = 0.5 %abs occurs between BOSCO cells with AlOx and SiO2 passivation, with the AlOx passivated solar cells achieving better cell performance. The difference in efficiency is dominated by a loss in fill factor of up to FF = 1.6 %abs for cells with SiO2 passivation compared to AlOx passivated cells. An investigation of the suns-Voc characteristics shows that this loss is mainly caused by increased recombination at lower injection, which strongly affects the pseudo fill factor. This work shows that the choice of rear-side passivation is essential to optimize the performance of BOSCO solar cells.
La finance verte au Maroc : défis et perspectives du prêt ‎écologique au secours du développement durable
Creators: name: ALOUI Bouchta
name: EL ALAOUI Salim
Publisher: name: Zenodo
Year: 2024

description: La finance verte, aussi connue sous les termes de finance durable ou éthique, ‎s'affirme comme un paradigme émergent répondant aux préoccupations croissantes ‎concernant la sauvegarde de l'environnement et l'impératif de promouvoir le développement ‎durable. Son objectif primordial réside dans l'orientation des flux financiers vers des projets ‎et initiatives dédiés à la préservation de l'environnement, à la réduction des émissions de gaz ‎à effet de serre et à la promotion d'une économie qui accorde une priorité à la sauvegarde de ‎la biodiversité.‎

Or, les dimensions essentielles de la finance verte se déclinent, primo, dans la ‎promotion des investissements orientés vers des projets favorisant la durabilité ‎environnementale, tels que les énergies renouvelables, l'efficacité énergétique et la gestion ‎durable des ressources naturelles. Deuzio, les projets financés sous l'égide de la finance verte ‎doivent répondre à des critères environnementaux stricts, afin d'être conformes aux principes ‎internationaux de durabilité. Ces critères incluent des normes de performance ‎environnementale, des évaluations de l'impact écologique et d'autres mesures pertinentes ‎pour la sauvegarde de l'environnement.‎

Toutefois, en l'absence d'un cadre juridique explicite et rigoureux, le risque de « ‎greenwashing » se manifeste, où certains projets peuvent se revendiquer abusivement comme ‎écologiques dans le but d'attirer des investisseurs. Dès lors, la transparence et la vérification ‎deviennent impératives pour prévenir de telles pratiques frauduleuses. En conséquence, il est ‎crucial que les institutions financières, telles que les banques, les fonds d'investissement et les ‎compagnies d'assurance, intègrent des critères environnementaux stricts dans leurs ‎processus décisionnels d'investissement et promeuvent des pratiques financières ‎responsables.‎

L'enjeu majeur de la finance verte réside dans la réorientation des flux financiers du ‎secteur traditionnel vers des projets centrés sur la sauvegarde de l'environnement. En ‎favorisant le développement de secteurs tels que les énergies renouvelables, elle contribue ‎activement à atténuer les impacts environnementaux néfastes. En essence, la finance verte ‎incarne une approche novatrice visant à harmoniser les intérêts financiers avec les exigences ‎de durabilité environnementale, jouant ainsi un rôle fondamental dans la transition vers une ‎économie plus écologique et résiliente.‎
Development of a New Way to Contact Glass-Free Metal Paste onto Silicon Emitter of Conventional Solar Cells with SiNx Coating
Creators: name: Tokuhisa, H.
name: Morita, S.
name: Ise, S.
name: Tsukamoto, S.
name: Tomita, M.
name: Yoshida, M.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1307-1309
description: This paper demonstrates a new approach to contact glass-free metal paste onto silicon of the front side
of conventional solar cells with SiNx-anti reflection coating (ARC). To open up a certain area of the ARC an etching
paste containing phosphoric acid was used. The problem was a SiO2 layer generation over the opened silicon after
the etching process since it is an insulator for the glass-free metal paste. Then, we found that addition of a Ag paste
without glass frits into the etching paste significantly mitigates the influence of the SiO2 generation, resulting in a
good contact formation between the silicon and the glass-free metal paste. For example, printing a Ag resin paste on
the etched area using the developed method shows a much lower specific contact resistivity compared to the case
without addition of Ag paste. It is almost the same as the resistivity in the case of a conventional Ag metallization
with a glass frit. We also found that carbon black in the etching paste has a key role to reduce the contact resistance
as well as prevent from Cu diffusion into Si. A preliminary result shows that a performance of solar cells with
metallization using the developed method was 11.4%.
The effect of anisotropy of long-range hopping on localization in three-dimensional lattices
Creators: name: Cantin, Joshua T.
name: Xu, Tianrui
name: Krems, Roman V.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: Quantum Gases (cond-mat.quant-gas)
subject: FOS: Physical sciences

description: It has become widely accepted that particles with long-range hopping do not undergo Anderson localization. However, several recent studies demonstrated localization of particles with long-range hopping. In particular, it was recently shown that the effect of long-range hopping in 1D lattices can be mitigated by cooperative shielding, which makes the system behave effectively as one with short-range hopping. Here, we show that cooperative shielding, demonstrated previously for 1D lattices, extends to 3D lattices with isotropic long-range $r^{-α}$ hopping, but not to 3D lattices with dipolar-like anisotropic long-range hopping. We demonstrate the presence of localization in 3D lattices with uniform ($α=0$) isotropic long-range hopping and the absence of localization with uniform anisotropic long-range hopping by using the scaling behaviour of eigenstate participation ratios. We use the scaling behaviour of participation ratios and energy level statistics to show that the existence of delocalized, non-ergodic extended, or localized states in the presence of disorder depends on both the exponents $α$ and the isotropy of the long-range hopping amplitudes.
description: 12 pages, 9 figures. Extensive rewrite and new perspective
The Investigation of Industrial PERC Cells with Efficiencies up to 19.49% Using p-Type Monocast Silicon
Creators: name: Wu, H.-Y.
name: Du, Y.-Y.
name: Huang, H.-H.
name: Huang, P.-S.
name: Cheng, L.-W.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1314-1316
description: In this work we evaluate the performance of monocast PERC cells which include the impact of the rear
side roughness and surface performance among mono, multi and grain region. With platen rear surface, both monocrystalline
(Cz-Si) and mc-Si regions showed lower surface recombination velocity, better light trapping and local
BSF contact formation. Grain region showed almost same surface roughness in all conditions which resulted in
similar QE and PL intensity. The champion cell achieved efficiency of 19.49%.
Advanced Printing Control for an Optimized Cell Metallization Morphology
Creators: name: Zamuner, M.
name: Borsato, O.
name: Boscolo Marchi, E.
name: Voltan, A.
name: Galiazzo, M.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1261-1263
description: Screen printing is still the most reliable method for contact formation of c-Si solar cells. Single Printing
(SP), in particular, is a proven and easy to use technique. There are some limitations in the way SP is normally
performed, because the main printing parameters are fixed and do not allow finger shape profiling. The purpose of
this work is to assess by simulation and laboratory experiments the impact of an improved finger and busbar
morphology, achieved by implementing the Advanced Printing Control (APC) process.
Proper definition and evolution of generalized transverse momentum distributions
Creators: name: Echevarria, Miguel G.
name: Idilbi, Ahmad
name: Kanazawa, Koichi
name: Lorcé, Cédric
name: Metz, Andreas
name: Pasquini, Barbara
name: Schlegel, Marc
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: We consider one of the most fundamental sets of hadronic matrix elements, namely the generalized transverse momentum distributions (GTMDs), and argue that their existing definitions lack proper evolution properties. By exploiting the similarity of GTMDs with the much better understood transverse momentum distributions, we argue that the existing definitions of GTMDs have to include an additional dependence on soft gluon radiation in order to render them properly defined. With this, we manage to obtain the evolution kernel of all (un)polarized quark and gluon GTMDs, which turns out to be spin independent. As a byproduct, all large logarithms can be resummed up to next-to-next-to-leading-logarithmic accuracy with the currently known perturbative ingredients.
description: v2: typo in eq.(19) corrected. Matches published version in PLB. v1: 9 pages, 2 figures
Nanometallic Silver Inks for Metallization of ITO-Coated Silicon Solar Cells: Influence of Organic Components
Creators: name: Gautrein, A.
name: Schmiga, C.
name: Glatthaar, M.
name: Tremel, W.
name: Glunz, S.W.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1277-1281
description: Printed inks or pastes based on silver nanoparticles are promising alternatives for the metallization of
temperature-sensitive silicon solar cells. We show that the sintering of silver nanoparticles strongly depends on the nature
of the capping agent used to stabilize the particles during synthesis and in ink formulation. Particles capped by agents
containing nitrogen as coordinative anchor group (between agent and silver surface) show poorer sintering under same
conditions compared with particles capped by oxygen containing stabilizers. Polymers also hinder sintering more than
shorter oligomers. In order to avoid unwanted spreading of the metal ink or paste during printing, the formulation has to
be adjusted to the requirements given by the surface. If samples covered by a layer of indium tin oxide are stored in air,
the surface energy rapidly decreases, dropping by around 30-50 % within one day. Thus, wettability and the work of
adhesion also become poorer. This has to be taken into account by formulating inks for metallization on ITO layers.
Wavefront sets and polarizations on supermanifolds
Creators: name: Dappiaggi, Claudio
name: Gimperlein, Heiko
name: Murro, Simone
name: Schenkel, Alexander
Publisher: name: arXiv
Year: 2015
Subjects: subject: Mathematical Physics (math-ph)
subject: High Energy Physics - Theory (hep-th)
subject: Analysis of PDEs (math.AP)
subject: FOS: Physical sciences
subject: FOS: Mathematics
subject: 58A50, 81T60, 35S05

description: In this paper we develop the foundations for microlocal analysis on supermanifolds. Making use of pseudodifferential operators on supermanifolds as introduced by Rempel and Schmitt, we define a suitable notion of super wavefront set for superdistributions which generalizes Dencker's polarization sets for vector-valued distributions to supergeometry. In particular, our super wavefront sets detect polarization information of the singularities of superdistributions. We prove a refined pullback theorem for superdistributions along supermanifold morphisms, which as a special case establishes criteria when two superdistributions may be multiplied. As an application of our framework, we study the singularities of distributional solutions of a supersymmetric field theory.
description: 26 pages, typos corrected, final version published in Journal of Mathematical Physics
Singular Platform for Dual-Sided Plasma Treatment and Coating of Si-Based Passivation Layers
Creators: name: Zhang, Z.
name: Dippell, T.
name: Huber, M.R.
name: Dörr, M.
name: Hohn, O.
name: Ge, J.
name: Tang, M.
name: Wong, J.
name: Mueller, T.
name: Wohlfart, P.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1239-1242
description: SINGULAR has shown excellent performance as a commercial production platform, which has so
far been used for single-sided plasma deposition of functional single layers or multi-layer stacks on silicon wafers.
In the current work SINGULAR has been further developed so that dual-sided plasma cleaning and coating is
realized without breaking the vacuum. Processes for surface cleaning with H2 plasma, which has a similar effect of
removing the native oxide as the conventional hydrofluoric acid (HF) dipping, and surface passivation by means of
intrinsic amorphous silicon [a-Si:H(i)] and amorphous silicon sub-oxide [a-SiOx:H(i)] are optimized. Remarkable
effective minority carrier lifetime values as high as 2 ms and 4.7 ms are observed on planar n-type Czochralski
wafers (resistivity 1 Ωcm) cleaned by HF-dipping and immediately passivated with a-Si:H(i) and a-SiOx:H(i)
layers, respectively. More impressively, by substituting HF-dipping with H2 plasma cleaning, even better
passivation quality [3.6 ms for a-Si:H(i) and 6 ms for a-SiOx:H(i) passivation] are achieved. These results reveal
promising potential of SINGULAR in the next generation of silicon wafer based solar cell fabrications, e.g.,
heterojunction cell manufacturing.
Gripping-in-Liquid: Significant Parameters for the Automated Handling of Ultrathin Substrates in Cleaning Baths
Creators: name: Giesen, T.
name: Mayer, P.
name: Behtan, C.
name: Wertz, R.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1243-1248
description: New photovoltaic cell concepts often involve the utilization of thin or ultra-thin silicon wafers. Future
photovoltaic cells based on ultra-thin silicon wafers require an appropriate and sensitive approach for the automation
of handling methods. When thinner substrates (<< 100μm) are considered, forced by cell architecture developments
or new wafering technologies, new automation solutions for the cleaning of substrates may be needed. Batch
processing in carriers may not work quite as well as for current wafer thicknesses (160 – 180 μm). The challenge
faced with inline processing, where applicable for cleaning, is the substrate’s edge protection and continuous
movement. A novel wafering method requires the cleaning of organic residues off an ultra-thin substrate in an etching
bath . The paper discusses the opportunities and limits for the automated handling of single ultra-thin substrates in
liquid and explains the identified significant parameters of the new handling method. The applicability and the limits
of the processing parameters for underwater gripping of ultra-thin wafers as well as the opportunities for a dedicated
advanced process control are presented.
Temperature Dependent Photoluminescence in Silicon Based Heterojunction Solar Cell
Creators: name: Xu, M.
name: Boutchich, M.
name: Jaffré, A.
name: Alvarez, J.
name: Gueunier-Farret, M.E.
name: Kleider, J.-P.
name: Halliop, B.
name: Kherani, N.P.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1214-1217
description: In this study photoluminescence (PL) experiments both in static and modulated mode are carried out as
the function of the temperature to investigate amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunctions.
Temperature dependent PL spectra enable the determination of effective carrier lifetime, Fermi level splitting, excess
carrier concentration and surface recombination velocity. In this sense the decrease of the temperature allow to
evidence an increase of the Fermi level splitting and surface recombination velocity and, in parallel, a decrease of the
effective carrier lifetime and carrier concentration. These results point out that the passivation of the a-Si:H/c-Si
interface is less effective at low temperature.
Analysis of Lateral Injection Effects in Operational Solar Cells
Creators: name: Lan, D.
name: Green, M.A.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1147-1152
description: Operational features of solar cells, particularly the lateral injection effects due to voltage build-up in the emitter region between the cell fingers, are becoming increasingly important with the improvements of modern cell technologies. To account for the lateral injection effects, a refined model is built by incorporating pseudo-photogeneration sources into the widely used transmission line model which consists of distributed elemental solar cells connected by resistive elements. A quantitative analysis demonstrates the key dependencies on cell and material parameters. It is shown that such effects reduce the emitter resistance and bulk recombination losses compared to the standard analysis and are more evident for high performance solar cells with a range of common features such as high voltage and current density output, lightly-doped base and emitter, narrow finger spacing, large bulk diffusion length and good rear surface passivation. The impact of lateral carrier injection on luminescence measurements is also noted and discussed.
p+ Doping Analysis of Laser Fired Contacts by Raman Spectroscopy
Creators: name: Ebser, J.
name: Brinkmann, N.
name: Schiele, Y.
name: Herguth, A.
name: Hahn, G.
name: Terheiden, B.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1177-1179
description: Laser firing of contacts is a simple method to establish local rear contacts of silicon PERC (passivated emitter and rear contact) solar cells. The silicon bulk is contacted point-wise by Al driven by the laser through the rear dielectric layer. The Al is deposited on the full area by physical vapor deposition or screen-printing. Al and B, if the Al paste contains B additives, can thereby establish a p+-doped Si region below the Laser Fired Contact (LFC), which helps to lower carrier recombination because of the local back surface field and also to reduce contact resistance. In this work Raman spectroscopy is used to detect and investigate the p+-layer established by laser firing through screen-printed Al. Scanning Raman measurements allow spatially resolved determination of the free hole concentration in the contact area. In a line scan through a LFC, the step in doping concentration between the lowly doped bulk Si and the highly doped LFC area is clearly seen by a high local hole concentrations in the range of 1019 cm-3 in the LFC region. This shows that scanning Raman spectroscopy is a useful method for the microscopic understanding of LFCs and optimization of the process parameters.
GridTOUCH: Innovative Solution for Accurate IV Measurement of Busbarless Cells in Production and Laboratory Environments
Creators: name: Bassi, N.
name: Clerc, C.
name: Pelet, Y.
name: Hiller, J.
name: Fakhfouri, V.
name: Droz, C.
name: Despeisse, M.
name: Levrat, J.
name: Faes, A.
name: Bätzner, D.
name: Papet, P.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1180-1185
description: The need to increase the efficiency (Eff) and to reduce the costs of solar cells has led to the new
concept of busbarless metallization on the front and the rear sides of cells. However, this technology implies
significant challenges, in particular the electrical contacting on the cell for the current-voltage (IV) measurement.
This paper will present the GridTOUCH system which is an innovative contacting solution able to measure busbarless
cells based on a slightly bended bottom plate and a grid of spring loaded wires on top. The solar cell is put below the
wire grid which smoothly presses it onto the bottom plate. This solution allows for a reliable and highly repeatable
contacting of the solar cell applying the Kelvin (4-terminals) method.
The quality of the electrical contact of such a contacting solution is mainly related to two main parameters: 1. how
homogeneously the contact resistance between the contacting unit and the cell is distributed over the cell; 2. how
repeatably this contact is reproduced over successive contacting movements on a cell. Consequently, the value of the
FillFactor (FF) and the repeatability of FF are the key parameters to monitor the contact resistance distribution and
the repeatability of the contact resistance distribution. Repeatability tests with the GridTOUCH system show very good
results on the tested cell technologies (Mono-cSi, Poly-cSi, HJT with different metallization patterns) below 0.05%
for the FF (STDEV/AVG at k=1). These performances are also achieved in production environment after 3 million of
contacting movements.
A new cell calibration method allowing accredited laboratories to provide reliable and independent reference values
for producer of busbarless cells based on GridTOUCH will be also presented. This approach is based on the variation of
the number of wires in the wire grid, influencing the shadowing and the serial resistance (Rs) of the IV measurement
Modeling of the Surface Defect Density in c-Si/a-Si:H Heterojunctions Using the Defect-Pool
Creators: name: Reaux, D.
name: Kleider, J.-P.
name: Gueunier-Farret, M.E.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1158-1161
description: Efficiency of solar cells based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) is limited by
recombination at their hetero-interface. We study, by simulation, the recombination at the a-Si:H/c-Si interface and model
the impact on the effective lifetime. The volume defects are modeled with the Defect-Pool model and we study whether
the surface defects at the a-Si:H/c-Si interface in c-Si can be considered as a projection of the defects in a-Si:H close to
the surface. Our simulation model can explain the effect of doping but fails to explain the effect of buffer layer thickness.
Results need to be confirmed with other Defect Pool parameters.
Relation between Local and Global I–U Characteristics: Restrictions for and by Series Resistance Averaging
Creators: name: Carstensen, J.
name: Wagner, J.-M.
name: Schütt, A.
name: Föll, H.
Publisher: name: WIP
Year: 2014
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 29th European Photovoltaic Solar Energy Conference and Exhibition; 1166-1170
description: Several approaches have been published for analyzing local I–U curve parameter in order to estimate
the contribution of each point of a solar cell to the global I–U curve. Nearly all of them use a one- or two-diode
model for the description of the local as well as the global I–U curve. In this paper it will be shown that due to the
nonlinear diode characteristics and the distributed series resistance network some fundamental restrictions exist for
averaging local parameters; thus in general the translation of local I–U curve parameters into averaged global I–U
curve parameters does not work. One fundamental condition will be proposed which ensures that nearly all
expectations with respect to the applicability of the standard equivalent circuit for describing the global I–U curve of
solar cells and the relation to local parameters hold.