title: ÐÐ»Ð¸ÑÐ½Ð¸Ðµ ÑÐ¿Ð¸Ð½Ð¾Ð²ÑÑ ÑÐ¿Ð¾ÑÑÐ´Ð¾ÑÐµÐ½Ð¸Ð¹ Ð½Ð° Ð½Ð¸Ð·ÐºÐ¾ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÐ¹ ÑÑÐ°Ð½ÑÐ¿Ð¾ÑÑ ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ge:As
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Effect of spin orderings on the low-temperature transport of compensated Ge:As
Creators: name: ÐÐµÑÐµÐ¼ÐµÐµÐ½ÐºÐ¾, ÐÑÐ¸Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¹ Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÐ¹ ÑÐµÐ·Ð¾Ð½Ð°Ð½Ñ
Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÑ
Ð¿ÑÑÐ¶ÐºÐ¾Ð²Ð°Ñ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÑ
ÑÐ°Ð·Ð¾Ð²ÑÐ¹ Ð¿ÐµÑÐµÑ Ð¾Ð´
Ð³ÐµÑÐ¼Ð°Ð½Ð¸Ð¹
Ð½Ð°Ð¼Ð°Ð³Ð½Ð¸ÑÐµÐ½Ð½Ð¾ÑÑÑ
ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ°ÑÐ¸Ñ Ð¿ÑÐ¸Ð¼ÐµÑÐ¸
Ð½Ð¸Ð·ÐºÐ¸Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ
electronic spin resonance
conductivity
hopping conductivity
phase transition
germanium
magnetization
compensation of impurity
low temperatures

description: ÐÐ±ÑÐµÐºÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ â ÑÐµÑÐ¸Ñ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² Ge:As Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½Ð¾Ð¹ ÑÑÐµÐ¿ÐµÐ½ÑÑ ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ°ÑÐ¸Ð¸ Ð¸ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸ÐµÐ¹ Ð¿ÑÐ¸Ð¼ÐµÑÐµÐ¹ Ð²Ð±Ð»Ð¸Ð·Ð¸ ÑÐ°Ð·Ð¾Ð²Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÑÐ¾Ð´Ð° Ð¼ÐµÑÐ°Ð»Ð»-Ð¸Ð·Ð¾Ð»ÑÑÐ¾Ñ. Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ ÐºÐ¾ÑÑÐµÐ»ÑÑÐ¸Ð¸ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ge:As Ð¸ ÐµÐ³Ð¾ Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÑ ÑÐ²Ð¾Ð¹ÑÑÐ² Ð¿ÑÐ¸ Ð½Ð¸Ð·ÐºÐ¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ Ð² Ð¾Ð±Ð»Ð°ÑÑÐ¸ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸Ð¸ Ð²Ð±Ð»Ð¸Ð·Ð¸ ÑÐ°Ð·Ð¾Ð²Ð¾Ð³Ð¾ Ð¿ÐµÑÐµÑÐ¾Ð´Ð° Ð¸Ð·Ð¾Ð»ÑÑÐ¾Ñ-Ð¼ÐµÑÐ°Ð»Ð». Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÐµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐ¾Ð¿ÑÐ¾ÑÐ¸Ð²Ð»ÐµÐ½Ð¸Ñ Ð´Ð»Ñ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² Ð³ÐµÑÐ¼Ð°Ð½Ð¸Ñ, Ð»ÐµÐ³Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¼ÑÑÑÑÐºÐ¾Ð¼ Ð¸ ÐºÐ¾Ð¼Ð¿ÐµÐ½ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð³Ð°Ð»Ð¸ÐµÐ¼ Ð¿ÑÐ¸ Ð½Ð¸Ð·ÐºÐ¸Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ. ÐÑÐ» Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½ Ð°Ð½Ð°Ð»Ð¸Ð· ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÑ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐµÐ¹ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð¿ÑÐ¸Ð²ÐµÐ´ÐµÐ½Ð½Ð¾Ð¹ ÑÐ½ÐµÑÐ³Ð¸Ð¸ Ð°ÐºÑÐ¸Ð²Ð°ÑÐ¸Ð¸, Ð² ÑÐ¾Ð´Ðµ ÐºÐ¾ÑÐ¾ÑÐ¾Ð³Ð¾ Ð±ÑÐ»Ð¸ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ñ Ð¿ÑÐ¸ÐºÐ»Ð°Ð´Ð½ÑÐµ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ñ OriginLab Pro Ð¸ SageMath. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¾ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÑ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐµÐ¹ Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ð¹ Ð²Ð¾ÑÐ¿ÑÐ¸Ð¸Ð¼ÑÐ¸Ð²Ð¾ÑÑÐ¸ Ð¸ Ð¿ÑÐ¸Ð²ÐµÐ´ÐµÐ½Ð½Ð¾Ð¹ ÑÐ½ÐµÑÐ³Ð¸Ð¸ Ð°ÐºÑÐ¸Ð²Ð°ÑÐ¸Ð¸, ÐºÐ¾ÑÐ¾ÑÐ¾Ðµ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ ÑÐ¿Ð¸Ð½Ð¾Ð²ÑÑ ÑÐ¿Ð¾ÑÑÐ´Ð¾ÑÐµÐ½Ð¸Ð¹ Ð½Ð° ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÐµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐ´ÐµÐ»ÑÐ½Ð¾Ð³Ð¾ ÑÐ¾Ð¿ÑÐ¾ÑÐ¸Ð²Ð»ÐµÐ½Ð¸Ñ Ð¸ Ð½Ð° ÑÑÐ°Ð½ÑÐ¿Ð¾ÑÑÐ½ÑÐµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð² ÑÐ¾Ð¾ÑÐ²ÐµÑÑÑÐ²ÐµÐ½Ð½Ð¾.
description: Object of research: samples Ge doped As with varying degrees of compensation and concentration of impurities near the metal-insulator phase transition. Objective: study the correlation of the conductivity of compensated Ge:As and its magnetic properties at low temperatures in the concentration region near the insulator-metal phase transition. Results: the temperature dependences of resistance were obtained for samples of germanium doped with arsenic and compensated with galium at low temperatures. The analysis of temperature dependences by the method of reduced activation energy was carried out, during which the OriginLab Pro and SageMath application programs were used. The temperature dependences of the magnetic susceptibility and the reduced activation energy were compared, which showed the effect of spin orderings on the temperature dependences of the resistivity and on the transport properties of the samples.