title: Ð¢ÐµÑÐ¼Ð¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° CoSi Ð¸ ÑÐ²ÐµÑÐ´ÑÑ ÑÐ°ÑÑÐ²Ð¾ÑÐ¾Ð² CoSi1-xMx (Ð=Ge,C)
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Thermoelectric properties of CoSi AND Si1-xMx solid solutions (M=Ge, C)
Creators: name: ÐÐ¾Ð·Ð³Ð¾Ð²Ð¾Ð¹, ÐÐ°Ð²ÐµÐ»
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2022
Subjects: Ð­Ð»ÐµÐºÑÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¾ÑÑÑ
Ð Ð°ÑÑÐ²Ð¾ÑÑ ÑÐ²ÐµÑÐ´ÑÐµ
Ð¼Ð¾Ð½Ð¾ÑÐ¸Ð»Ð¸ÑÐ¸Ð´ ÐºÐ¾Ð±Ð°Ð»ÑÑÐ°
ÐºÐ¸Ð½ÐµÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÑ
ÑÑÐ°Ð½ÑÐ¿Ð¾ÑÑÐ½ÑÐµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð°
ÑÐµÑÐ¼Ð¾ÑÐ´Ñ
cobalt monosilicide
kinetic coefficients
transport properties
thermopower

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ ÑÐµÑÐ¼Ð¾ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² Ð¼Ð¾Ð½Ð¾ÑÐ¸Ð»Ð¸ÑÐ¸Ð´Ð° ÐºÐ¾Ð±Ð°Ð»ÑÑÐ° Ð¸ ÐµÐ³Ð¾ ÑÐ²ÐµÑÐ´ÑÑ ÑÐ°ÑÑÐ²Ð¾ÑÐ¾Ð² Ñ Ð¸Ð·Ð¾Ð²Ð°Ð»ÐµÐ½ÑÐ½ÑÐ¼ Ð·Ð°Ð¼ÐµÑÐµÐ½Ð¸ÐµÐ¼ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð½Ð° Ð³ÐµÑÐ¼Ð°Ð½Ð¸Ð¹ Ð¸ ÑÐ³Ð»ÐµÑÐ¾Ð´. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ Ð½ÐµÐ´Ð°Ð²Ð½Ð¸Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ CoSi Ð¸ ÑÐ°ÑÑÐ²Ð¾ÑÐ¾Ð², Ð±ÑÐ» Ð½Ð°Ð¹Ð´ÐµÐ½ ÑÐ¿Ð¾ÑÐ¾Ð± ÑÐµÐ³ÑÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÑÐ°Ð½ÑÐ¿Ð¾ÑÑÐ½ÑÑ ÑÐ²Ð¾Ð¹ÑÑÐ², Ð±ÐµÐ· Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾Ð³Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð½Ð° ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐµ. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ Ð´Ð°Ð½Ð½ÑÐµ Ð¸Ð· ÑÐ°Ð·Ð½ÑÑ Ð¸ÑÑÐ¾ÑÐ½Ð¸ÐºÐ¾Ð² ÑÐ²Ð¸Ð´ÐµÑÐµÐ»ÑÑÑÐ²ÑÑÑ Ð¾Ð± ÑÑÐ¿ÐµÑÐ½Ð¾ÑÑÐ¸ ÑÐµÐ°Ð»Ð¸Ð·Ð°ÑÐ¸Ð¸ Ð´Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¼ÐµÑÐ¾Ð´Ð°, Ð½Ð¾ ÑÐ°Ð·Ð»Ð¸ÑÐ¸Ñ Ð² ÑÐ¸ÑÐ»ÐµÐ½Ð½ÑÑ Ð·Ð½Ð°ÑÐµÐ½Ð¸ÑÑ, Ð³Ð¾Ð²Ð¾ÑÑÑ Ð¾ Ð½ÐµÐ¾Ð±ÑÐ¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸ ÑÐ°Ð¼Ð¾ÑÑÐ¾ÑÑÐµÐ»ÑÐ½Ð¾Ð¹ Ð¿ÑÐ¾Ð²ÐµÑÐºÐ¸. Ð¦ÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐµÑÑÑ, Ð¿ÑÐ¾Ð¸Ð·Ð²ÐµÑÑÐ¸ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÐµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÐºÐ¸Ð½ÐµÑÐ¸ÑÐµÑÐºÐ¸Ñ ÐºÐ¾ÑÑÑÐ¸ÑÐ¸ÐµÐ½ÑÐ¾Ð² Ð¸ Ð¾ÑÐµÐ½Ð¸ÑÑ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÐ°ÑÑÐ²Ð¾ÑÐ¾Ð².Â Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ ÑÐ°Ð±Ð¾ÑÑ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½ÑÐµ Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ ÑÐµÑÐ¼Ð¾ÑÐ´Ñ Ð¸ ÑÐ»ÐµÐºÑÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¾ÑÑÐ¸, CoSi Ð¸ ÐµÐ³Ð¾ ÑÐ²ÐµÑÐ´ÑÑ ÑÐ°ÑÑÐ²Ð¾ÑÐ¾Ð² Â Â CoGe Ð¸ CoC Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ 100 â 800 Ð, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÐµÐ¿Ð»Ð¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¾ÑÑÑ Ð² Ð¸Ð½ÑÐµÑÐ²Ð°Ð»Ðµ 100 â 300Â K. ÐÑÐ»Ð° Ð¿ÑÐ¾Ð¸Ð·Ð²ÐµÐ´ÐµÐ½Ð° Ð¾ÑÐµÐ½ÐºÐ° Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð¸Ð·Ð¾Ð²Ð°Ð»ÐµÐ½ÑÐ½Ð¾Ð³Ð¾ Ð·Ð°Ð¼ÐµÑÐµÐ½Ð¸Ñ Ð½Ð° ÑÑÐ°Ð½ÑÐ¿Ð¾ÑÑÐ½ÑÐµ Ð¸ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð². Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ ÑÐ°Ð±Ð¾ÑÑ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¸, ÑÑÐ¾ Ð¸Ð·Ð¾Ð²Ð°Ð»ÐµÐ½ÑÐ½Ð¾Ðµ Ð·Ð°Ð¼ÐµÑÐµÐ½Ð¸Ðµ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð½Ð° Ð³ÐµÑÐ¼Ð°Ð½Ð¸Ð¹ Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ Ð²Ð»Ð¸ÑÐµÑ Ð½Ð° ÑÑÐ°Ð½ÑÐ¿Ð¾ÑÑÐ½ÑÐµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° ÑÐ¾ÑÑÐ°Ð²Ð°, Ð¿ÑÐ°ÐºÑÐ¸ÑÐµÑÐºÐ¸ Ð½Ðµ Ð¸Ð·Ð¼ÐµÐ½ÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐµ. ÐÐµÑÐ¾Ð´ ÑÐ¿Ð»Ð°Ð²Ð»ÐµÐ½Ð¸Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÐµÐ¼Ñ Ð² Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÐµ Ð´Ð»Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¾Ð², ÑÑÐµÐ±ÑÐµÑ Ð½ÐµÐºÐ¾ÑÐ¾ÑÐ¾Ð¹ ÐºÐ¾ÑÑÐµÐºÑÐ¸ÑÐ¾Ð²ÐºÐ¸, ÑÐ°Ðº ÐºÐ°Ðº Ð´Ð°Ð½Ð½ÑÐµ, Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÐµ Ð¿ÑÐ¸ Ð·Ð°Ð¼ÐµÑÐµÐ½Ð¸Ð¸ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð½Ð° ÑÐ³Ð»ÐµÑÐ¾Ð´, ÑÐ¸Ð³Ð½Ð°Ð»Ð¸Ð·Ð¸ÑÑÑÑ Ð¾ Ð¿Ð¾ÑÐ²Ð»ÐµÐ½Ð¸Ð¸ Ð¿Ð¾ÑÑÐ¾ÑÐ¾Ð½Ð½Ð¸Ñ Ð´ÐµÑÐµÐºÑÐ°Ñ (ÑÐ°Ð·Ðµ).Â 
description: This work is devoted to the study of thermoelectric properties of cobalt monosilicide and its solid solutions with isovalent substitution of silicon for germanium and carbon. As a result of recent CoSi research and solutions, a way has been found to regulate transport properties without significantly affecting electronic properties. Data obtained from different sources indicate the success of the implementation of this method, but differences in numerical values indicate the need for independent verification. The aim of the work is to conduct experimental studies of kinetic coefficients and to evaluate the properties of the obtained solutions.Â As a result of the work, temperature dependences of thermal EMF and electrical conductivity of CoSi and its solid solutions of CoGe and CoC in the range of 100-800 K were obtained, as well as thermal conductivity in the range of 100-300 K. The effect of isovalent substitution on the transport and electronic properties of the samples was estimated. The results of the work showed that the isovalent replacement of silicon with germanium significantly affects the transport properties of the composition, practically without changing the electronic ones. The melting method used in this work to obtain crystals requires some adjustment, since the data obtained when replacing silicon with carbon signal the appearance of extraneous defects (phases).