title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸Ð·Ð°ÑÐ¸Ð¸ Ð°Ð¼Ð¾ÑÑÐ½Ð¾Ð³Ð¾ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð² ÑÐ¾Ð½ÐºÐ¾Ð¿Ð»ÑÐ½Ð¾ÑÐ½ÑÑ ÑÐ¸ÑÑÐµÐ¼Ð°Ñ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Investigation of crystallization processes of amorphous silicon in thin-film systems
Creators: name: ÐÐ°Ð»ÑÐ½Ð¾Ð², ÐÐ¸ÑÐ°Ð¸Ð»
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: ÑÐ¾Ð»Ð½ÐµÑÐ½ÑÐµ ÑÐ»ÐµÐ¼ÐµÐ½ÑÑ
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Ð¼Ð¾Ð´Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ñ Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ¸
Ð¸Ð¼Ð¿ÑÐ»ÑÑÐ½ÑÐ¹ Ð»Ð°Ð·ÐµÑÐ½ÑÐ¹ Ð¾ÑÐ¶Ð¸Ð³
ÑÐ¾Ð½ÐºÐ¾Ð¿Ð»ÑÐ½Ð¾ÑÐ½ÑÐµ ÑÑÑÑÐºÑÑÑÑ
solar cells
silicon technology
crystallization of amorphous silicon
surface modification
pulsed laser annealing
thin-film structures

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description: Polycrystalline silicon of various purities is the main material for creating devices of modern electronics, microelectronics and photo-energy. The use of the in the manufacture of solar cells is difficult to overestimate. The aim of this work is to find the optimal method for crystallization of amorphous silicon using pulsed laser irradiation to create efficient and inexpensive solar cells that can work on low-melting substrates. In the course of the work, thin films of amorphous silicon were modified, and methods for protecting silicon from oxidation using an inert gas and a protective coating were also proposed. Raman spectroscopy of the modified regions from each of the samples showed the formation of nanocrystals. All values of the Raman displacement fall within the range of allowable values characteristic of crystalline silicon.