title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð½Ð°ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐ°Ð´Ð¸Ð¹ ÑÐ¾ÑÑÐ° Ð½Ð° ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ GaN/AlGaN Ñ Ð´Ð²ÑÐ¼ÐµÑÐ½ÑÐ¼ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¼ Ð³Ð°Ð·Ð¾Ð¼, Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾âÐ»ÑÑÐµÐ²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Investigation of the influence of the initial growth stages on the properties of GaN / AlGaN heterostructures with two-dimensional electron gas obtained by molecular beam epitaxy
Creators: name: ÐÐ°ÑÐ°ÑÐ¸Ð½, ÐÐ»ÐµÐ³
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð°Ñ Ð»ÑÑÐµÐ²Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð½Ð¸ÑÑÐ¸Ð´Ñ Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð² III-Ð³ÑÑÐ¿Ð¿Ñ
Ð´Ð²ÑÐ¼ÐµÑÐ½ÑÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¹ Ð³Ð°Ð·
Ð¿Ð¾Ð´Ð²Ð¸Ð¶Ð½Ð¾ÑÑÑ
molecular beam epitaxy
growth processes
two-dimensional electron gas
ammonia flow
metal-organic chemical vapour deposition

description: Ð¡ÑÑÑÐºÑÑÑÑ GaN/AlGaN Ð¾Ð±Ð»Ð°Ð´Ð°ÑÑ ÑÐ½Ð¸ÐºÐ°Ð»ÑÐ½ÑÐ¼ ÑÐ¾ÑÐµÑÐ°Ð½Ð¸ÐµÐ¼ ÑÐ²Ð¾Ð¹ÑÑÐ²: Ð²ÑÑÐ¾ÐºÐ¸Ðµ Ð¿ÑÐ¾Ð±Ð¸Ð²Ð½ÑÐµ Ð¿Ð¾Ð»Ñ, Ð²ÑÑÐ¾ÐºÐ°Ñ ÑÐµÑÐ¼Ð¸ÑÐµÑÐºÐ°Ñ Ð¸ ÑÐ°Ð´Ð¸Ð°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÑÐ¾Ð¹ÐºÐ¾ÑÑÑ. ÐÑÐµ ÑÑÐ¾ Ð´ÐµÐ»Ð°ÐµÑ Ð´Ð°Ð½Ð½ÑÐµ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð»Ñ Ð¿ÑÐ¸Ð²Ð»ÐµÐºÐ°ÑÐµÐ»ÑÐ½ÑÐ¼Ð¸ Ð´Ð»Ñ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð² Ð²ÑÑÐ¾ÐºÐ¾ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð¹ ÑÐ¸Ð»ÑÐ½Ð¾ÑÐ¾ÑÐ½Ð¾Ð¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐµ. ÐÑÐ½Ð¾Ð²Ð½Ð¾Ð¹ ÑÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐ»Ð¾ÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð½Ð°ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐ°Ð´Ð¸Ð¹ ÑÐ¾ÑÑÐ° Ð½Ð° ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ GaN/AlGaN Ñ Ð´Ð²ÑÐ¼ÐµÑÐ½ÑÐ¼ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¼ Ð³Ð°Ð·Ð¾Ð¼ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾âÐ»ÑÑÐµÐ²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸. Ð Ð¿ÑÐ¾ÑÐµÑÑÐµ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ ÑÐµÑÐµÐ½Ñ ÑÐ»ÐµÐ´ÑÑÑÐ¸Ðµ Ð·Ð°Ð´Ð°ÑÐ¸: 
1. ÐÑÑÐ°ÑÐ¸Ð²Ð°Ð½Ð¸Ðµ Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ AlN/AlGaN/GaN/AlGaN Ð¿ÑÐ¸ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð½Ð°ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ ÑÐ¾ÑÑÐ°.
2. ÐÑÑÑÐµÑÑÐ²Ð»ÐµÐ½Ð¸Ðµ ÐºÐ¾Ð½ÑÑÐ¾Ð»Ñ Ð² Ð¿ÑÐ¾ÑÐµÑÑÐµ ÑÐ¾ÑÑÐ° ÑÐ»ÐµÐ´ÑÑÑÐ¸Ð¼Ð¸ Ð¼ÐµÑÐ¾Ð´Ð°Ð¼Ð¸: Ð»Ð°Ð·ÐµÑÐ½Ð°Ñ Ð¸Ð½ÑÐµÑÑÐµÑÐ¾Ð¼ÐµÑÑÐ¸Ñ Ð¸ Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ñ Ð±ÑÑÑÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð².
3. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ Ð¸Ð·Ð¼ÐµÑÐµÐ½Ð¸Ð¹ ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¿Ð¾Ð»ÑÑÐ¸Ð²ÑÐ¸ÑÑÑ ÑÑÑÑÐºÑÑÑ.
4. ÐÐ½Ð°Ð»Ð¸Ð· Ð´Ð°Ð½Ð½ÑÑ
ÐÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ðµ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¿Ð¾Ð´ÑÐ¾Ð´Ð¾Ð² Ð½Ð° ÑÑÐ°Ð¿Ðµ ÑÐ¾ÑÑÐ° Ð±ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð¾ÐµÐ² (ÑÑÑÑÐ°ÐºÑÐ°Ð½Ñ Ga Ð¸Ð»Ð¸ Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½ÑÐ¹ Ð¿Ð¾ÑÐ¾Ðº Ð°Ð¼Ð¼Ð¸Ð°ÐºÐ° Ð¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ° Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸) Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÐµÑ Ð·Ð°Ð¼ÐµÑÐ½Ð¾ ÑÐ²ÐµÐ»Ð¸ÑÐ¸ÑÑ Ð¿Ð¾Ð´Ð²Ð¸Ð¶Ð½Ð¾ÑÑÑ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÐµÐ¹ Ð² Ð´Ð²ÑÐ¼ÐµÑÐ½Ð¾Ð¼ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¼ Ð³Ð°Ð·Ðµ.
description: GaN / AlGaN structures have a unique combination of properties: high breakdown fields, high thermal and radiation resistance. All this makes these materials very attractive for use in high-temperature high-current electronics. The main goal of the work was to study the effect of the initial growth stages on the properties of GaN / AlGaN heterostructures with two-dimensional electron gas obtained by molecular beam epitaxy. In the process, the following tasks were solved:
1. Growing of AlN / AlGaN / GaN / AlGaN heterostructures under various initial growth conditions.
2. Monitoring during growth by the following methods: laser interferometry and diffraction of fast electrons.
3. Measurement of the physical parameters of the resulting structures.
4. Data analysis
The use of various approaches at the initial stage of growth of buffer layers (Ga-surfactant or optimized ammonia flow and substrate temperature) can significantly increase the carrier mobility in a two-dimensional electron gas.