title: Ð ÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ½Ð¾Ðµ ÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°ÑÐ¸Ð¾Ð½Ð½Ð¾Ðµ ÑÐ°ÑÑÐµÑÐ½Ð¸Ðµ ÑÐ²ÐµÑÐ° Ñ Ð¿ÐµÑÐµÐ²Ð¾ÑÐ¾ÑÐ¾Ð¼ ÑÐ¿Ð¸Ð½Ð° Ð² ÑÑÑÑÐºÑÑÑÐ°Ñ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¼Ð°Ð¼Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: The resonant spin-flip Raman scattering in a quantum-well structures
Creators: name: Ð Ð°Ð³Ð¾Ð·Ð°, ÐÐ¸ÑÐ°Ð¸Ð»
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2020
Subjects: ÑÐ¿Ð¸Ð½ÑÑÐ¾Ð½Ð¸ÐºÐ°
Ð½Ð¸Ð·ÐºÐ¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÐµ ÑÑÑÑÐºÑÑÑÑ
ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¼Ñ
ÑÐ°Ð¼Ð°Ð½Ð¾Ð²ÑÐºÐ¾Ðµ ÑÐ°ÑÑÐµÑÐ½Ð¸Ðµ Ñ Ð¿ÐµÑÐµÐ²Ð¾ÑÐ¾ÑÐ¾Ð¼ ÑÐ¿Ð¸Ð½Ð°
ÑÐ°ÐºÑÐ¾Ñ Ð»Ð°Ð½Ð´Ñ
ÐºÐ²Ð°Ð·Ð¸Ð¿ÑÑÐ¼ÑÐµ ÑÐºÑÐ¸ÑÐ¾Ð½Ñ
ÑÐ¼ÐµÑÐ¸Ð²Ð°Ð½Ð¸Ðµ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ð¹ Ð¥- Ð¸ Ð- Ð´Ð¾Ð»Ð¸Ð½
spintronics
low-dimensional structures
quantum wells
spin-flip raman scattering
landÃ© splitting factor
quasi direct excitons
state mixing of X- and G- valleys

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ GaAs/AlAs ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼ Ñ ÑÐ°Ð·Ð½ÑÐ¼Ð¸ ÐºÐ¾Ð½ÑÐ¸Ð³ÑÑÐ°ÑÐ¸ÑÐ¼Ð¸ ÑÐ¸ÑÐ¸Ð½Ñ ÑÐ¼Ñ Ð¸ Ð±Ð°ÑÑÐµÑÐ°. Ð¦ÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¾ Ð¸Ð·ÑÑÐµÐ½Ð¸Ðµ ÑÐ¼ÐµÑÐ¸Ð²Ð°Ð½Ð¸Ñ Ð¥ Ð¸ Ð ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ð¹ Ð·Ð¾Ð½Ñ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸, ÑÐ²ÑÐ·Ð°Ð½Ð½Ð¾Ðµ Ñ Ð²Ð»Ð¸ÑÐ½Ð¸ÐµÐ¼ ÑÐ°Ð·Ð¼ÐµÑÐ½Ð¾Ð³Ð¾ ÐºÐ²Ð°Ð½ÑÐ¾Ð²Ð°Ð½Ð¸Ñ. ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¸ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ½Ð¾Ð³Ð¾ ÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°ÑÐ¸Ð¾Ð½Ð½Ð¾Ð³Ð¾ (ÑÐ°Ð¼Ð°Ð½Ð¾Ð²ÑÐºÐ¾Ð³Ð¾) ÑÐ°ÑÑÐµÑÐ½Ð¸Ñ ÑÐ²ÐµÑÐ° Ñ Ð¿ÐµÑÐµÐ²Ð¾ÑÐ¾ÑÐ¾Ð¼ ÑÐ¿Ð¸Ð½Ð°, Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÑÑÐ¸Ð¼ Ð¾Ð¿ÑÐµÐ´ÐµÐ»Ð¸ÑÑ ÑÐ°ÐºÑÐ¾ÑÑ ÐÐ°Ð½Ð´Ñ (g-ÑÐ°ÐºÑÐ¾ÑÑ), ÑÐ¾ÑÑÐ°Ð²Ð»ÑÑÑÐ¸Ðµ ÑÐºÑÐ¸ÑÐ¾Ð½Ð½ÑÐµ ÐºÐ¾Ð¼Ð¿Ð»ÐµÐºÑÑ ÑÐ°ÑÑÐ¸Ñ, ÑÑÐ°ÑÑÐ²ÑÑÑÐ¸Ñ Ð² ÑÐ°ÑÑÐµÑÐ½Ð¸Ð¸. Ð ÑÐ°Ð±Ð¾ÑÐµ Ð±ÑÐ»Ð¾ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð½Ð¾, ÑÑÐ¾ Ð² Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾ÑÑÐ¸ Ð¾Ñ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸Ñ Ð¼ÐµÐ¶Ð´Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ°Ð¼Ð¸ Ð±Ð°ÑÑÐµÑÐ° Ð¸ ÑÐ¼Ñ Ð² GaAs/AlAs Ð¼Ð¾Ð³ÑÑ Ð²Ð¾Ð·Ð±ÑÐ¶Ð´Ð°ÑÑÑÑ ÐºÐ°Ðº Ð¿ÑÑÐ¼ÑÐµ, ÑÐ°Ðº Ð¸ Ð½ÐµÐ¿ÑÑÐ¼ÑÐµ Ð² Ð¸Ð¼Ð¿ÑÐ»ÑÑÐ½Ð¾Ð¼ Ð¸ ÑÐµÐ°Ð»ÑÐ½Ð¾Ð¼ Ð¿ÑÐ¾ÑÑÑÐ°Ð½ÑÑÐ²Ðµ ÑÐºÑÐ¸ÑÐ¾Ð½Ñ. ÐÐ½ÑÐµÑÐµÑ Ð² Ð¸Ð·ÑÑÐµÐ½Ð¸Ð¸ Ð¿Ð¾ÑÐ»ÐµÐ´Ð½Ð¸Ñ ÑÐ¾ÑÑÐ¾Ð¸Ñ Ð² ÑÐ¾Ð¼, ÑÑÐ¾ Ð¾Ð½Ð¸ Ð¾Ð±Ð»Ð°Ð´Ð°ÑÑ Ð±Ð¾Ð»ÑÑÐ¸Ð¼ Ð²ÑÐµÐ¼ÐµÐ½ÐµÐ¼ Ð¶Ð¸Ð·Ð½Ð¸ Ð¿Ð¾ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ñ Ñ Ð¿ÐµÑÐ²ÑÐ¼Ð¸, ÑÑÐ¾ ÑÐ°ÑÐ°ÐºÑÐµÑÐ¸Ð·ÑÐµÑ Ð¸Ñ ÐºÐ°Ðº Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½ÑÐµ Ð¿ÐµÑÐµÐ½Ð¾ÑÑÐ¸ÐºÐ¸ Ð¸Ð½ÑÐ¾ÑÐ¼Ð°ÑÐ¸Ð¸ Ð´Ð»Ñ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð² ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ Ð²ÑÑÐ¸ÑÐ»ÐµÐ½Ð¸ÑÑ Ð¸ ÑÐ¿Ð¸Ð½ÑÑÐ¾Ð½Ð¸ÐºÐµ. Ð ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐµ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ Ð·Ð½Ð°ÑÐµÐ½Ð¸Ñ g-ÑÐ°ÐºÑÐ¾ÑÐ¾Ð² Ð´ÑÑÐ¾Ðº Ð¸ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð², ÑÐ¾ÑÑÐ°Ð²Ð»ÑÑÑÐ¸Ñ ÑÐºÑÐ¸ÑÐ¾Ð½, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¸Ð·ÑÑÐµÐ½Ð° Ð¸Ñ ÑÐ¸Ð¼Ð¼ÐµÑÑÐ¸Ñ. Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¸ Ð²ÑÐ²Ð¾Ð´Ñ, Ð¿ÑÐ¸Ð²ÐµÐ´ÐµÐ½Ð½ÑÐµ Ð² ÑÐ°Ð±Ð¾ÑÐµ, Ð¼Ð¾Ð³ÑÑ Ð±ÑÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ñ ÐºÐ°Ðº Ð´Ð»Ñ Ð´Ð°Ð»ÑÐ½ÐµÐ¹ÑÐµÐ³Ð¾ Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ ÑÐ¿Ð¸Ð½-Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼ÑÑ ÑÐ²Ð»ÐµÐ½Ð¸Ð¹ Ð² ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¼Ð°Ñ, ÑÐ°Ðº Ð¸ Ð´Ð»Ñ ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ ÑÑÑÑÐ¾Ð¹ÑÑÐ², Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÑÑÐ¸Ñ ÑÐ¿Ð¸Ð½Ð¾Ð²ÑÑ ÑÑÐµÐ¿ÐµÐ½Ñ ÑÐ²Ð¾Ð±Ð¾Ð´Ñ.
description: The general subject of this work was researching of a GaAs/AlAs quantum wells with a different width configuration of wells and barriers. The purpose of the work was to study a mixing of X- and G- states of conduction band in a connection with a quantum confinement. The studies were carried out by a method of resonant combinative (Raman) light scattering with a spin-flip that allows to determine LandÃ© factors (g-factors) which are composing exciton complexes of particles involved in scattering. The work is showing that capacity of exciting of direct and indirect excitons in momentum space and the real space depends on the relationship between the barrier and well parameters in GaAs/AlAs. The benefit of studying of the latters is their capacity of a longer lifetime in comparison with the formers, that characterizes them as promising information carriers for application in quantum computing and spintronics. As a result of the work were obtained the values of g-factors of that holes and electrons which constitute exciton and, also, were studied their symmetry. Results and conclusions presented in the work can be used for further study of spin-dependent phenomena in quantum wells and for creating devices that are using spin degree of freedom.