title: ÐÑÐ¾Ð¼Ð½Ð¾ ÑÐ»Ð¾ÐµÐ²Ð¾Ðµ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ðµ Ð¿Ð»ÐµÐ½Ð¾Ðº ÑÐ¸ÑÑÐµÐ¼Ñ Ta-O
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Atomic Layer Deposition of Ta-O System Films
Creators: name: Ð¤ÐµÐ´Ð¾ÑÐ¾Ð², ÐÐ°Ð²ÐµÐ»
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2021
Subjects: Ð°ÑÐ¾Ð¼Ð½Ð¾-ÑÐ»Ð¾ÐµÐ²Ð¾Ðµ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ðµ
Ð¾ÐºÑÐ¸Ð´ ÑÐ°Ð½ÑÐ°Ð»Ð°
Ð½Ð°Ð½Ð¾Ð¿Ð»ÑÐ½ÐºÐ¸
Ð»Ð¸ÑÐ¸Ð¹-Ð¸Ð¾Ð½Ð½ÑÐµ Ð°ÐºÐºÑÐ¼ÑÐ»ÑÑÐ¾ÑÑ
Ð°Ð½Ð¾Ð´Ñ
atomic layer deposition
tantalum oxide
nanofilms
lithium-ion batteries
anodes

description: Ð¢ÐµÐ¼Ð° Ð²ÑÐ¿ÑÑÐºÐ½Ð¾Ð¹ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ: Â«ÐÑÐ¾Ð¼Ð½Ð¾ ÑÐ»Ð¾ÐµÐ²Ð¾Ðµ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ðµ Ð¿Ð»ÐµÐ½Ð¾Ðº ÑÐ¸ÑÑÐµÐ¼Ñ Ta-OÂ». Ð¦ÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¾ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ðµ Ð½Ð°Ð½Ð¾Ð¿Ð»ÑÐ½Ð¾Ðº Ð¾ÐºÑÐ¸Ð´Ð° ÑÐ°Ð½ÑÐ°Ð»Ð° Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ ÐÐ¡Ð Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¸Ñ ÑÐ¸Ð·Ð¸ÐºÐ¾-ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ². ÐÐ»Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ Ð¿Ð»ÑÐ½Ð¾Ðº Ta-O Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð»ÑÑ Ð¼ÐµÑÐ¾Ð´ Ð°ÑÐ¾Ð¼Ð½Ð¾-ÑÐ»Ð¾ÐµÐ²Ð¾Ð³Ð¾ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ñ (ÐÐ¡Ð). ÐÐ»Ñ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ ÑÐ¾Ð»ÑÐ¸Ð½Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¿Ð»ÐµÐ½Ð¾Ðº Ð¸ ÑÐ°ÑÑÑÑÐ° Ð¿ÑÐ¸ÑÐ¾ÑÑÐ° Ð·Ð° ÑÐ¸ÐºÐ» Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð»ÑÑ Ð¼ÐµÑÐ¾Ð´ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð¾Ð¹ ÑÐ»Ð»Ð¸Ð¿ÑÐ¾Ð¼ÐµÑÑÐ¸Ð¸ (Ð¡Ð­). Ð¤Ð¸Ð·Ð¸ÐºÐ¾-ÑÐ¸Ð¼Ð¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¿Ð»ÐµÐ½Ð¾Ðº Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð»Ð¸ÑÑ Ð¼ÐµÑÐ¾Ð´Ð°Ð¼Ð¸ ÑÐµÐ½ÑÐ³ÐµÐ½Ð¾ÑÐ°Ð·Ð¾Ð²Ð¾Ð³Ð¾ Ð°Ð½Ð°Ð»Ð¸Ð·Ð° (Ð Ð¤Ð), ÑÐµÐ½ÑÐ³ÐµÐ½Ð¾Ð²ÑÐºÐ¾Ð¹ ÑÐµÑÐ»ÐµÐºÑÐ¾Ð¼ÐµÑÑÐ¸Ð¸ (Ð Ð ), ÑÐºÐ°Ð½Ð¸ÑÑÑÑÐµÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸ (Ð¡Ð­Ð), ÑÐ½ÐµÑÐ³Ð¾Ð´Ð¸ÑÐ¿ÐµÑÑÐ¸Ð¾Ð½Ð½Ð¾Ð¹ ÑÐµÐ½ÑÐ³ÐµÐ½Ð¾Ð²ÑÐºÐ¾Ð¹ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸ (Ð­ÐÐ Ð¡), ÑÐµÐ½ÑÐ³ÐµÐ½Ð¾Ð²ÑÐºÐ°Ñ ÑÐ¾ÑÐ¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð°Ñ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸ (Ð Ð¤Ð­Ð¡) Ð¸ ÑÐ¸ÐºÐ»Ð¸ÑÐµÑÐºÐ¾Ð¹ Ð²Ð¾Ð»ÑÑÐ°Ð¼Ð¿ÐµÑÐ¾Ð¼ÐµÑÑÐ¸Ð¸ (Ð¦ÐÐ). ÐÑÐ»Ð¸ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ñ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÐµ ÑÑÐ»Ð¾Ð²Ð¸Ñ ÑÐ¸Ð½ÑÐµÐ·Ð° Ð½Ð°Ð½Ð¾Ð¿Ð»ÑÐ½Ð¾Ðº Ta-O. Ð Ð¤Ð Ð¿Ð¾ÐºÐ°Ð·Ð°Ð», ÑÑÐ¾ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÐµ Ð¿Ð»ÐµÐ½ÐºÐ¸ Ð°Ð¼Ð¾ÑÑÐ½Ñ. Ð Ð  Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð°, ÑÑÐ¾ Ð½Ð°Ð½Ð¾Ð¿Ð»ÑÐ½ÐºÐ¸ Ð¾Ð±Ð»Ð°Ð´Ð°ÑÑ Ð½Ð¸Ð·ÐºÐ¾Ð¹ ÑÐµÑÐ¾ÑÐ¾Ð²Ð°ÑÐ¾ÑÑÑÑ, Ð° Ð¸Ñ Ð¿Ð»Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð±Ð»Ð¸Ð·ÐºÐ¸ Ðº ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð¸ÑÐµÑÐºÐ¾Ð¼Ñ Ta2O5. ÐÐ° Ð¼Ð¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð³ÑÐ°ÑÐ¸ÑÑ Ð¡Ð­Ð Ð²Ð¸Ð´Ð½Ð¾, ÑÑÐ¾ Ð¿Ð»ÑÐ½ÐºÐ¸ Ð³Ð»Ð°Ð´ÐºÐ¸Ðµ, Ð¾Ð´Ð½Ð¾ÑÐ¾Ð´Ð½ÑÐµ Ð¸ Ð±ÐµÐ· Ð²Ð¸Ð´Ð¸Ð¼ÑÑ Ð´ÐµÑÐµÐºÑÐ¾Ð². Ð­ÐÐ Ð¡ Ð¸ Ð Ð¤Ð­Ð¡ Ð¿Ð¾Ð´ÑÐ²ÐµÑÐ´Ð¸Ð»Ð¸ Ð½Ð°Ð»Ð¸ÑÐ¸Ðµ ÑÐ°Ð½ÑÐ°Ð»Ð° Ð¸ ÐºÐ¸ÑÐ»Ð¾ÑÐ¾Ð´Ð° Ð² Ð¿Ð»ÑÐ½ÐºÐµ Ñ ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸ÐµÐ¼ Ta:O=1:2,7, ÑÑÐ¾ Ð±Ð»Ð¸Ð·ÐºÐ¾ Ðº ÑÐ¾Ð¾ÑÐ½Ð¾ÑÐµÐ½Ð¸Ñ ÑÐ°Ð½ÑÐ°Ð»Ð° Ðº ÐºÐ¸ÑÐ»Ð¾ÑÐ¾Ð´Ñ Ð² Ta2O5. Ð¡Ð¾Ð³Ð»Ð°ÑÐ½Ð¾ Ð¦ÐÐ, Ð² ÐºÐ°ÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÐ¸ Ð¿Ð¾ÑÐµÐ½ÑÐ¸Ð°Ð»Ð¾Ð² (3,0â4,3Ð) Ð½Ðµ Ð½Ð°Ð±Ð»ÑÐ´Ð°ÐµÑÑÑ ÑÑÐ¸Ð»ÐµÐ½Ð¸Ð¹ ÑÐ¾ÐºÐ°. Ð ÐµÐ·ÑÐ»ÑÑÐ°ÑÑ ÑÐ°Ð±Ð¾ÑÑ Ð¿Ð¾ÐºÐ°Ð·Ð°Ð»Ð¸, ÑÑÐ¾ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð½ÑÐµ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÐµ ÑÑÐ»Ð¾Ð²Ð¸Ñ Ð¿ÑÐ¾ÑÐµÑÑÐ° ÐÐ¡Ð Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ ÑÑÐ¾ÐºÑÐ¸Ð´Ð° ÑÐ°Ð½ÑÐ°Ð»Ð° Ð¸ ÐºÐ¸ÑÐ»Ð¾ÑÐ¾Ð´Ð½Ð¾Ð¹ Ð¿Ð»Ð°Ð·Ð¼Ñ Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÑÑ Ð¿Ð¾Ð»ÑÑÐ°ÑÑ ÑÐ°Ð²Ð½Ð¾Ð¼ÐµÑÐ½ÑÐµ Ð¸ Ð°Ð¼Ð¾ÑÑÐ½ÑÐµ Ð½Ð°Ð½Ð¾Ð¿Ð»ÑÐ½ÐºÐ¸ Ð¾ÐºÑÐ¸Ð´Ð° ÑÐ°Ð½ÑÐ°Ð»Ð° (V), Ð¢Ð¾Ð½ÐºÐ¸Ðµ Ð¿Ð»ÐµÐ½ÐºÐ¸ Ð¾ÐºÑÐ¸Ð´Ð° ÑÐ°Ð½ÑÐ°Ð»Ð° Ð¿ÑÐ¸Ð¼ÐµÐ½ÑÑÑÑÑ Ð´Ð»Ñ Ð¿Ð¾ÐºÑÑÑÐ¸Ð¹ Ð² Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ Ð¿ÑÐ¸Ð±Ð¾ÑÐ°Ñ, Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ Ð´Ð¸ÑÐ»ÐµÐºÑÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ»Ð¾ÐµÐ² Ð´Ð»Ñ Ð¼Ð¸ÐºÑÐ¾- Ð¸ Ð½Ð°Ð½Ð¾ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐ¸, Ð° ÑÐ°ÐºÐ¶Ðµ Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½ÑÐ¾Ð² Ð»Ð¸ÑÐ¸Ð¹-Ð¸Ð¾Ð½Ð½ÑÑ Ð°ÐºÐºÑÐ¼ÑÐ»ÑÑÐ¾ÑÐ¾Ð². ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ¸ÑÑÑÑ Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ÑÑÑ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð½Ð°Ð½Ð¾Ð¿Ð»ÑÐ½Ð¾Ðº Ð¾ÐºÑÐ¸Ð´Ð° ÑÐ°Ð½ÑÐ°Ð»Ð° Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ ÑÐ²ÑÑÐ´Ð¾Ð³Ð¾ ÑÐ»ÐµÐºÑÑÐ¾Ð»Ð¸ÑÐ° Ð»Ð¸ÑÐ¸Ð¹-Ð¸Ð¾Ð½Ð½ÑÑ Ð°ÐºÐºÑÐ¼ÑÐ»ÑÑÐ¾ÑÐ¾Ð².
description: The theme of the final qualification work: "Atomic-layer deposition of tantalum oxide nanofilms and the study of their physical and chemical properties." This work aimed to obtain tantalum oxide nanofilms by the ALD method and study their physicochemical properties. To obtain Ta-O films, the method of atomic layer deposition (ALD) was used. To determine the thickness of the obtained films and calculate the gain per cycle, the method of spectral ellipsometry (SE) was used. The physicochemical properties of the obtained films were studied by methods of X-Ray diffraction (XRD), X-ray reflectometry (XRR), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CVA). The optimal conditions for the synthesis of Ta-O nanofilms were determined. XRD showed that the resulting films are amorphous. XRR showed that nanofilms have low roughness, and their densities are close to crystalline Ta2O5. The SEM micrographs show that the films are smooth, homogeneous, and free from visible defects. EDS and XPS confirmed the presence of tantalum and oxygen in the film with the ratio Ta: O = 1: 2.7, close to the ratio of tantalum to oxygen in Ta2O5. According to CVA, no current amplifications are observed in the cathode potential range (3.0â4.3 V). The work results showed that certain optimal conditions of the ALD process using tantalum ethoxide and oxygen plasma make it possible to obtain uniform and amorphous nanofilms of tantalum (V) oxide. Thin tantalum oxide films are used for coatings in optical devices, as dielectric layers for micro- and nanoelectronics, and also as components of lithium-ion batteries. The results obtained demonstrate the possibility of using tantalum oxide nanofilms as a solid electrolyte for lithium-ion batteries.