title: Ð ÐµÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°ÑÐ¸Ð¾Ð½Ð½Ð¾Ðµ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ðµ Ð² Ð³ÐµÑÐµÑÐ¾ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÑ ÐºÐ²Ð°Ð½ÑÐ¾Ð²Ð¾ÑÐ°Ð·Ð¼ÐµÑÐ½ÑÑ ÑÑÑÑÐºÑÑÑÐ°Ñ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¾ÑÐºÐ°Ð¼Ð¸ InAs, Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÐ¼Ð¸ Ð½Ð° Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ¸ GaAs (311)Ð
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Recombination Radiation in Heteroepitaxial Quantum Size Structures with InAs Quantum Dots Grown on a GaAs (311)B Surface
Creators: name: ÐÑÐ·Ð½ÐµÑÐ¾Ð²Ð°, Ð¯Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: Ð¤Ð¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ
ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¾ÑÐºÐ¸
ÑÐµÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°ÑÐ¸Ð¾Ð½Ð½Ð¾Ðµ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ðµ
Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑÐ° Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¾ÑÐºÐ°Ð¼Ð¸
Ð°Ð½ÑÐ°Ð¼Ð±Ð»Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¾ÑÐµÐº
Ð¼ÐµÑ Ð°Ð½Ð¸Ð·Ð¼ Ð¡ÑÑÐ°Ð½ÑÐºÐ¸-ÐÐ°ÑÑÑÐ°Ð½Ð¾Ð²Ð°
quantum dots
recombination radiation
heterostructure with quantum dots
ensemble of quantum dots
Stransky-Kastranov mechanism

description: Ð Ð°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð³ÐµÑÐµÑÐ¾ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½ÑÑ ÑÑÑÑÐºÑÑÑ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¾ÑÐºÐ°Ð¼Ð¸ InAs, Ð²ÑÑÐ°ÑÐµÐ½Ð½ÑÐ¼Ð¸ Ð½Ð° Ð¿Ð¾Ð»ÑÐ¸Ð·Ð¾Ð»Ð¸ÑÑÑÑÐ¸Ñ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ°Ñ GaAs (311)B. ÐÐµÑÐµÐ´ ÑÑÑÐ´ÐµÐ½ÑÐ¾Ð¼ ÑÑÐ°Ð²ÑÑÑÑ Ð·Ð°Ð´Ð°ÑÐ¸: 1. ÐÐ·ÑÑÐµÐ½Ð¸Ðµ Ð»Ð¸ÑÐµÑÐ°ÑÑÑÑ Ð¿Ð¾ ÑÐµÐ¼Ð°ÑÐ¸ÐºÐµ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾Ð³Ð¾ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°; 2. ÐÐ¾ÑÑÐ°Ð½Ð¾Ð²ÐºÐ° Ð¸ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ° Ð² ÑÐ°Ð¼ÐºÐ°Ñ Ð¸Ð·ÑÑÐµÐ½Ð¸Ñ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² Ð³ÐµÑÐµÑÐ¾ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð°Ð»ÑÐ½Ð¾Ð¹ ÑÑÑÑÐºÑÑÑÑ Ñ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐ¼Ð¸ ÑÐ¾ÑÐºÐ°Ð¼Ð¸ InAs, Ð²ÑÑÐ°ÑÐµÐ½Ð½Ð¾Ð¹ Ð½Ð° Ð¿Ð¾Ð»ÑÐ¸Ð·Ð¾Ð»Ð¸ÑÑÑÑÐµÐ¹ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐµ GaAs (311)B; 3. ÐÐ±ÑÐ°Ð±Ð¾ÑÐºÐ° Ð¸ Ð¾Ð±ÑÑÑÐ½ÐµÐ½Ð¸Ðµ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÑ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð². Ð¡Ð½ÑÑÐ¸Ðµ ÑÐ¿ÐµÐºÑÑÐ¾Ð² Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»Ð¾ÑÑ Ð¿ÑÐ¸ Ð¿Ð¾Ð¼Ð¾ÑÐ¸ Ð²ÑÑÐ¾ÐºÐ¾ÑÑÐ°Ð±Ð¸Ð»ÑÐ½Ð¾Ð³Ð¾ He-Ne Ð»Ð°Ð·ÐµÑÐ° Ñ Ð´Ð»Ð¸Ð½Ð¾Ð¹ Ð²Ð¾Ð»Ð½Ñ 632,817 Ð½Ð¼. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐ¿ÐµÐºÑÑÑ Ð¾Ð±ÑÐ°Ð±Ð°ÑÑÐ²Ð°Ð»Ð¸ÑÑ Ð¿ÑÐ¸ Ð¿Ð¾Ð¼Ð¾ÑÐ¸ ÑÐ¿ÐµÑÐ¸Ð°Ð»Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½Ð¾-Ð¼Ð°ÑÐµÐ¼Ð°ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ Ð¾Ð±ÐµÑÐ¿ÐµÑÐµÐ½Ð¸Ñ OriginPro 2023b. Ð­ÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½Ñ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð»ÑÑ Ð¿ÑÐ¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ: Ð¶Ð¸Ð´ÐºÐ¾Ð³Ð¾ Ð³ÐµÐ»Ð¸Ñ (Ð¢ = 5,2 Ð) Ð¸ Ð°Ð·Ð¾ÑÐ° (Ð¢ = 77 Ð). ÐÑÐ»Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ñ ÑÐ¿ÐµÐºÑÑÑ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ Ð¿ÑÐ¸ ÑÐ°Ð·Ð½ÑÑ Ð¼Ð¾ÑÐ½Ð¾ÑÑÑÑ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð³Ð¾ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ. ÐÐ¾ÑÐ½Ð¾ÑÑÑ Ð²Ð°ÑÑÐ¸ÑÐ¾Ð²Ð°Ð»Ð°ÑÑ Ð¾Ñ 0,5 Ð¼ÐÑ Ð´Ð¾ 13 Ð¼ÐÑ. ÐÐ»Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ Ð²Ð¾Ð·Ð±ÑÐ¶Ð´ÐµÐ½Ð¸Ñ Ð  = 1,25 Ð¼ÐÑ Ð¸ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð¢ = 77 Ð FWHM ÑÐ¿ÐµÐºÑÑÐ° ÑÐ¾ÑÑÐ°Ð²Ð¸Ð»Ð° 44,29 Â± 2,97 Ð¼ÑÐ. Ð ÐµÐ·ÑÐ»ÑÑÐ°Ñ ÑÑÑÐµÑÑÐ²ÐµÐ½Ð½Ð¾ Ð¼ÐµÐ½ÑÑÐµ ÑÐ¸Ð¿Ð¸ÑÐ½ÑÑ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð², Ð´Ð¾ÑÑÐ¸Ð³Ð½ÑÑÑÑ ÑÐ°Ð½ÐµÐµ Ð¿ÑÐ¸ ÑÐ¾Ð¿Ð¾ÑÑÐ°Ð²Ð¸Ð¼ÑÑ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ, ÑÑÐ¾ Ð´ÐµÐ»Ð°ÐµÑ Ð¸ÑÑÐ»ÐµÐ´ÑÐµÐ¼ÑÐ¹ Ð¼Ð°ÑÐµÑÐ¸Ð°Ð» Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½ÑÐ¼ Ð´Ð»Ñ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð² ÑÐ¾Ð²ÑÐµÐ¼ÐµÐ½Ð½ÑÑ Ð¾Ð¿ÑÐ¾ÑÐ»ÐµÑÑÐ¾Ð½Ð½ÑÑ ÑÑÑÑÐ¾Ð¹ÑÑÐ²Ð°Ñ [14],[19],[27].
description: This work is devoted to the study of heteroepitaxial structures with InAs quantum dots grown on semi-isolating GaAs (311)B substrates. The student has the following tasks: 1. study the literature on the topic of the experiment; 2. To set up and conduct an experiment to study the optical properties of InAs heteroepitaxial structure with quantum dots grown on GaAs (311)B semi-isolating substrate; 3. Processing and explanation of the experimental results. The spectra were taken using a highly stable He-Ne laser with a wavelength of 632.817 nm. The obtained spectra were processed using specialized software and mathematical software OriginPro 2023b. The experiment was conducted at the temperatures: liquid helium (T = 5.2 K) and nitrogen (T = 77 K). Emission spectra were obtained at different laser irradiation powers. The power varied from 0.5 mW to 13 mW. For the excitation power P = 1.25 mW and temperature T = 77 K, the FWHM of the spectrum was 44.29 Â± 2.97 meV. The obtained result is significantly less than typical results achieved earlier under comparable experimental conditions, which makes the investigated material promising for application in modern optoelectronic devices[14],[19],[27].