title: Ð¤ÑÐ½ÐºÑÐ¸Ð¾Ð½Ð°Ð»ÑÐ½ÑÐµ Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑÑ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Si: Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ðµ, Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ², Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ðµ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Functional nanostructures based on Si: fabrication, study of optical properties, application
Creators: name: ÐÑÐ¸Ð³Ð¾Ð´Ð°, ÐÑÐ¸ÑÑÐ¸Ð½Ð°
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2023
Subjects: ÐÑÐµÐ¼Ð½Ð¸Ð¹
Ð¡ÐµÑÐµÐ±ÑÐ¾
ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÐµ Ð½Ð°Ð½Ð¾Ð½Ð¸ÑÐ¸
Ð¼ÐµÑÐ°Ð»Ð»-ÑÑÐ¸Ð¼ÑÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ðµ Ñ Ð¸Ð¼Ð¸ÑÐµÑÐºÐ¾Ðµ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ðµ
Ð°ÑÐ¾Ð¼Ð½Ð¾-ÑÐ»Ð¾ÐµÐ²Ð¾Ðµ Ð¾ÑÐ°Ð¶Ð´ÐµÐ½Ð¸Ðµ
ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð°Ñ ÑÐ»Ð»Ð¸Ð¿ÑÐ¾Ð¼ÐµÑÑÐ¸Ñ
ÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°ÑÐ¸Ð¾Ð½Ð½Ð¾Ðµ ÑÐ°ÑÑÐµÑÐ½Ð¸Ðµ ÑÐ²ÐµÑÐ°
silicon nanowires
metal-assisted chemical etching
atomic layer deposition
spectroscopic ellipsometry
raman scattering

description: ÐÐ°Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¿Ð¾ÑÐ²ÑÑÐµÐ½Ð° ÑÐ¾Ð·Ð´Ð°Ð½Ð¸Ñ Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ ÑÑÐ½ÐºÑÐ¸Ð¾Ð½Ð°Ð»ÑÐ½ÑÑ Ð²ÑÑÐ¾ÐºÐ¾Ð°ÑÐ¿ÐµÐºÑÐ½ÑÑ Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑ Ð½Ð° Ð¾ÑÐ½Ð¾Ð²Ðµ Ñ-Si. Ð ÑÐ¾Ð´Ðµ Ð´Ð°Ð½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¸ ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ðµ Ð¾Ð´Ð½Ð¾ÑÑÐ°Ð¿Ð½Ð¾Ð³Ð¾ Ð¸ Ð´Ð²ÑÑÑÑÐ°Ð¿Ð½Ð¾Ð³Ð¾ Ð¿ÑÐ¾ÑÐµÑÑÐ¾Ð² ÐÐ¡Ð¥Ð¢ Ñ-Si Ð´Ð»Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð¸Ñ ÐºÑÐµÐ¼Ð½Ð¸ÐµÐ²ÑÑ Ð½Ð°Ð½Ð¾Ð½Ð¸ÑÐµÐ¹, Ð° ÑÐ°ÐºÐ¶Ðµ Ð¸Ð·ÑÑÐµÐ½Ð¾ Ð²Ð»Ð¸ÑÐ½Ð¸Ðµ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð´Ð¾Ð¿Ð¾Ð»Ð½Ð¸ÑÐµÐ»ÑÐ½Ð¾Ð³Ð¾ Ð¾ÑÐ²ÐµÑÐµÐ½Ð¸Ñ Ð½Ð° ÑÐºÐ¾ÑÐ¾ÑÑÑ ÑÑÐ°Ð²Ð»ÐµÐ½Ð¸Ñ Ð² Ð¾Ð´Ð½Ð¾ÑÑÐ°Ð¿Ð½Ð¾Ð¼ Ð¼ÐµÑÐ¾Ð´Ðµ ÐÐ¡Ð¥Ð¢. ÐÐ° Ð¾ÑÐ½Ð¾Ð²Ðµ c-Si Ð¸ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÐ°Ð½ÐµÐµ ÐÐÐ Ð±ÑÐ»Ð¸ ÑÐ¾Ð·Ð´Ð°Ð½Ñ ÐºÐ¾Ð¼Ð¿Ð¾Ð·Ð¸ÑÐ½ÑÐµ ÑÑÑÑÐºÑÑÑÑ Ag/c-Si, Ag/ÐÐÐ. ÐÐ°ÑÐµÐ¼ Ð¸Ñ Ð¼Ð¾ÑÑÐ¾Ð»Ð¾Ð³Ð¸Ñ Ð¸ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð±ÑÐ»Ð¸ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð¼ÐµÑÐ¾Ð´Ð°Ð¼Ð¸ Ð¼Ð½Ð¾Ð³Ð¾ÑÐ³Ð»Ð¾Ð²Ð¾Ð¹ ÑÐ¿ÐµÐºÑÑÐ°Ð»ÑÐ½Ð¾Ð¹ ÑÐ»Ð»Ð¸Ð¿ÑÐ¾Ð¼ÐµÑÑÐ¸Ð¸, Ð Ð­Ð, Ð Ð¤Ð­Ð¡, Ð° ÑÐ°ÐºÐ¶Ðµ ÑÐ¿ÐµÐºÑÑÐ¾ÑÐºÐ¾Ð¿Ð¸Ð¸ ÐÐ Ð¡. ÐÐ°Ð¼Ð¸ Ð±ÑÐ»Ð° Ð¿ÑÐµÐ´Ð»Ð¾Ð¶ÐµÐ½Ð° Ð¼Ð½Ð¾Ð³Ð¾ÑÐ»Ð¾Ð¹Ð½Ð°Ñ Ð¼Ð¾Ð´ÐµÐ»Ñ Ð´Ð»Ñ Ð¾Ð±ÑÐ°Ð±Ð¾ÑÐºÐ¸ ÑÐ»Ð»Ð¸Ð¿ÑÐ¾Ð¼ÐµÑÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ¿ÐµÐºÑÑÐ¾Ð². ÐÐµÑÐ¾Ð´Ð¾Ð¼ Ð¿Ð¾Ð´Ð³Ð¾Ð½ÐºÐ¸ ÑÐ°ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð»Ð¸Ð¿ÑÐ¾Ð¼ÐµÑÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ³Ð»Ð¾Ð² (Ï Ð¸ Î) Ð¼Ñ Ð¿Ð¾Ð»ÑÑÐ¸Ð»Ð¸ ÑÐ¾ÑÐ¾ÑÐµÐµ ÑÐ¾Ð³Ð»Ð°ÑÐ¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ°ÑÑÐµÑÐ½ÑÑ ÑÐ¿ÐµÐºÑÑÐ¾Ð² Ñ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ°Ð»ÑÐ½ÑÐ¼Ð¸, Ð° ÑÐ°ÐºÐ¶Ðµ Ñ Ð´Ð°Ð½Ð½ÑÐ¼Ð¸, Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÐ¼Ð¸ Ð¸Ð· Ð Ð­Ð-Ð¸Ð·Ð¾Ð±ÑÐ°Ð¶ÐµÐ½Ð¸Ð¹ Ð¾Ð±ÑÐ°Ð·ÑÐ¾Ð². Ð¡ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð¼Ð¾Ð´ÐµÐ»Ð¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ¸Ñ ÑÐ²Ð¾Ð¹ÑÑÐ² ÑÑÑÑÐºÑÑÑ Ag/ÐÐÐ Ð² Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½Ð¾Ð¼ Ð¿Ð°ÐºÐµÑÐµ COMSOL Multiphysics Ð±ÑÐ» Ð¿Ð¾Ð»ÑÑÐµÐ½ ÑÐ°ÑÑÐµÑÐ½ÑÐ¹ ÑÐ°ÐºÑÐ¾Ñ ÑÑÐ¸Ð»ÐµÐ½Ð¸Ñ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½Ð¾-ÑÑÐ¸Ð»ÐµÐ½Ð½Ð¾Ð³Ð¾ ÐÐ Ð¡, Ð·Ð½Ð°ÑÐµÐ½Ð¸Ðµ ÐºÐ¾ÑÐ¾ÑÐ¾Ð³Ð¾ Ð´Ð¾ÑÑÐ¸Ð³Ð»Ð¾ 1010, ÑÑÐ¾ Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÐµÑ Ð³Ð¾Ð²Ð¾ÑÐ¸ÑÑ Ð¾ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ ÑÐ°ÐºÐ¸Ñ ÑÑÑÑÐºÑÑÑ Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ ÐÐÐ -Ð°ÐºÑÐ¸Ð²Ð½ÑÑ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐµÐº. Ð¡ Ð¿Ð¾-Ð¼Ð¾ÑÑÑ Ð¼Ð°ÑÐ¸Ð½Ð½Ð¾Ð³Ð¾ Ð¾Ð±ÑÑÐµÐ½Ð¸Ñ Ð¿Ð¾ ÑÐ¿ÐµÐºÑÑÐ°Ð¼ ÐÐ Ð¡ Ð´Ð»Ñ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÑÑÑÐºÑÑÑ Ag/c-Si Ð±ÑÐ» ÑÑÑÐ°Ð½Ð¾Ð²Ð»ÐµÐ½ Ð¿ÑÐ¾ÑÐµÐ½Ñ ÑÐ¾ÑÐ½Ð¾ÑÑÐ¸ Ð¾Ð±Ð½Ð°ÑÑÐ¶ÐµÐ½Ð¸Ñ Ð²Ð¸ÑÑÑÐ° Ð³ÑÐ¸Ð¿Ð¿Ð° Ð³ÑÑÐ¿Ð¿Ñ Ð â 78,4 Â± 3,5%, ÑÑÐ¾ ÑÐ°ÐºÐ¶Ðµ Ð³Ð¾Ð²Ð¾ÑÐ¸Ñ Ð¾ Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ÑÑÐ¸ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¿Ð¾Ð´Ð¾Ð±Ð½ÑÑ ÑÑÑÑÐºÑÑÑ Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ ÐÐÐ -Ð°ÐºÑÐ¸Ð²Ð½ÑÑ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐµÐº Ð´Ð»Ñ Ð¾Ð±Ð½Ð°ÑÑÐ¶ÐµÐ½Ð¸Ñ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð°Ð½Ð°Ð»Ð¸ÑÐ¾Ð² Ð² Ð¼Ð°Ð»ÑÑ ÐºÐ¾Ð½ÑÐµÐ½ÑÑÐ°ÑÐ¸ÑÑ.
description: The given work is devoted to the creation and study of functional high-aspect nanostructures based on c-Si. In the course of this work, a study and com-parison of one-stage and two-stage MACE of c-Si processes for obtaining silicon nanowires were carried out, and the effect of additional illumination on the etching rate in the one-step MACE method was studied. Ag/c-Si and Ag/SiNWs composite structures were created on the basis of c-Si and previously obtained SiNWs. Then their morphology and optical properties were studied by multi-angle spectroscopic ellipsometry, SEM, XPS and Raman spectroscopy. We have proposed a multilayer model for processing ellipsometric spectra. By fitting the calculated ellipsometric angles (Ï and Î), we obtained good agreement between the calculated spectra and the experimental ones, as well as with the data obtained from the SEM images of the samples. By modeling the optical properties of Ag/SiNWs structures in the COMSOL Multiphysics software package, a calculated enhancement factor of the surface-enhanced Raman scattering was obtained, the value of which reached 1010, which suggests that such structures are promising as SERS-active substrates. With the help of machine learning based on the Raman spectra for the obtained Ag/c-Si structures, the percentage accuracy of detection of influenza group A virus was de-termined to be 78,4 Â± 3,5%, which also indicates the possibility of using such structures as SERS-active substrates for detection of various analytes at low con-centrations.