title: Ð ÐµÐ³Ð¸ÑÑÑÐ°ÑÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÑ ÑÐµÐ½ÑÑÐ¾Ð² ÑÐµÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°ÑÐ¸Ð¸ Ð½Ð° Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ¸ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ ÑÑÑÐµÐºÑÐ¾Ð² ÑÐ¿Ð¸Ð½-Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾Ð¹ Ð¼Ð¸ÐºÑÐ¾Ð²Ð¾Ð»Ð½Ð¾Ð²Ð¾Ð¹ ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Registration of silicon surface paramagnetic centers utilizing effects of microwave photoconductivity
Creators: name: Ð¤ÐµÐ´Ð¾ÑÐ¾Ð², ÐÐ³Ð¾ÑÑ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: ÑÐ¿Ð¸Ð½-Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð°Ñ ÑÐµÐºÐ¾Ð¼Ð±Ð¸Ð½Ð°ÑÐ¸Ñ
Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½ÑÐ½ÑÐ¹ Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ½ÑÐ¹ ÑÐµÐ½ÑÑ
Ð¼Ð¸ÐºÑÐ¾Ð²Ð¾Ð»Ð½Ð¾Ð²Ð°Ñ ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÑ
Ð´ÐµÑÐµÐºÑÑ Ð½Ð° Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑÐ¸ ÐºÑÐµÐ¼Ð½Ð¸Ñ
ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¹ Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÐ¹ ÑÐµÐ·Ð¾Ð½Ð°Ð½Ñ
Ð¿ÑÐ¾Ð¼ÑÑÐ»ÐµÐ½Ð½ÑÐ¹ ÐºÑÐµÐ¼Ð½Ð¸Ð¹
Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÐµ ÑÑÐ»Ð¾Ð²Ð¸Ñ ÑÐµÐ³Ð¸ÑÑÑÐ°ÑÐ¸Ð¸
spin-dependent recombination
paramagnetic surface center
microwave photoconductivity
surface silicon defects
electron spin resonance
industrially manufactured silicon
optimal experimental conditions

description: ÐÐ±ÑÐµÐºÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ â Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÐµ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½ÑÐµ ÑÐµÐ½ÑÑÑ Ð½Ð° Ð¿ÑÐ¾Ð¼ÑÑÐ»ÐµÐ½Ð½Ð¾-Ð¸Ð·Ð³Ð¾ÑÐ¾Ð²Ð»ÐµÐ½Ð½ÑÑ Ð¿Ð»Ð°ÑÑÐ¸Ð½Ð°Ñ ÐºÑÐµÐ¼Ð½Ð¸Ñ. Ð¦ÐµÐ»Ñ ÑÐ°Ð±Ð¾ÑÑ â Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°ÑÑ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½ÑÑ Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÑ ÑÐµÐ½ÑÑÐ¾Ð² Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð­ÐÐ  Ñ ÑÐµÐ³Ð¸ÑÑÑÐ°ÑÐ¸ÐµÐ¹ ÑÐ¸Ð³Ð½Ð°Ð»Ð¾Ð² ÑÐ¿Ð¸Ð½-Ð·Ð°Ð²Ð¸ÑÐ¸Ð¼Ð¾Ð¹ ÑÐµÐ»Ð°ÐºÑÐ°ÑÐ¸Ð¸ (Ð¡ÐÐ ) Ð¿Ð¾ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð¼Ð¸ÐºÑÐ¾Ð²Ð¾Ð»Ð½Ð¾Ð²Ð¾Ð¹ Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸. Ð¡Ð¾ÑÑÐ°Ð²Ð»ÐµÐ½ Ð»Ð¸ÑÐµÑÐ°ÑÑÑÐ½ÑÐ¹ Ð¾Ð±Ð·Ð¾Ñ Ð¿Ð¾ Ð¸ÑÑÐ»ÐµÐ´ÑÐµÐ¼Ð¾Ð¹ ÑÐµÐ¼Ðµ. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ñ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÑ Ð¿Ð¾ Ð½Ð°ÑÐ¾Ð¶Ð´ÐµÐ½Ð¸Ñ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·ÑÐµÐ¼ÑÐ¼ Ð² ÑÐ°Ð±Ð¾ÑÐµ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ Ð² ÑÐ¾Ð´Ðµ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ¾Ð² ÑÐ¸Ð³Ð½Ð°Ð»Ñ Ð¸Ð´ÐµÐ½ÑÐ¸ÑÐ¸ÑÐ¸ÑÐ¾Ð²Ð°Ð½Ñ ÐºÐ°Ðº ÑÐ¸Ð³Ð½Ð°Ð»Ñ Ð¸Ð·Ð²ÐµÑÑÐ½ÑÑ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½ÑÑ ÑÐµÐ½ÑÑÐ¾Ð², Ð² ÑÐ¾Ð¾ÑÐ²ÐµÑÑÑÐ²Ð¸Ð¸ Ñ Ð¿ÑÐµÐ´ÑÐ´ÑÑÐ¸Ð¼Ð¸ ÑÐ°Ð±Ð¾ÑÐ°Ð¼Ð¸ Ð² ÑÑÐ¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÐ¸. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ñ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÑ Ð¿Ð¾ Ð´ÐµÑÐµÐºÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÐ¸Ð³Ð½Ð°Ð»Ð¾Ð² Ð¿Ð°ÑÐ°Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÑ ÑÐµÐ½ÑÑÐ¾Ð² Ð² ÑÐ»Ð°Ð±ÑÑ Ð¼Ð°Ð³Ð½Ð¸ÑÐ½ÑÑ Ð¿Ð¾Ð»ÑÑ Ð¸ ÑÐ¸Ð³Ð½Ð°Ð»Ð¾Ð² Ð±ÐµÐ· Ð¼Ð°Ð³Ð½Ð¸ÑÐ½Ð¾Ð³Ð¾ ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ°, ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð½Ð°ÑÐ¾Ð´ÑÑÑÑ Ð² ÑÐ¾Ð¾ÑÐ²ÐµÑÑÑÐ²Ð¸Ð¸ Ñ ÑÐµÐ¾ÑÐµÑÐ¸ÑÐµÑÐºÐ¸Ð¼Ð¸ Ð¿ÑÐµÐ´ÑÐºÐ°Ð·Ð°Ð½Ð¸ÑÐ¼Ð¸. Ð Ð°Ð½ÐµÐµ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ½ÑÐµ ÑÐµÐ½ÑÑÑ Ð½Ð° Ð¿Ð»Ð°ÑÑÐ¸Ð½Ð°Ñ ÐºÑÐµÐ¼Ð½Ð¸Ñ Ð¾ÑÐ¸ÐµÐ½ÑÐ°ÑÐ¸Ð¸ (110) Ð¸ (111) Ð½Ðµ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð»Ð¸ÑÑ Ñ Ð¿Ð¾Ð¼Ð¾ÑÑÑ Ð±ÐµÑÐºÐ¾Ð½ÑÐ°ÐºÑÐ½Ð¾Ð³Ð¾ Ð¼ÐµÑÐ¾Ð´Ð° ÑÐµÐ³Ð¸ÑÑÑÐ°ÑÐ¸Ð¸ Ð­ÐÐ -Ð¡ÐÐ  Ð¿Ð¾ Ð¸Ð·Ð¼ÐµÐ½ÐµÐ½Ð¸Ñ Ð¡ÐÐ§-ÑÐ¾ÑÐ¾Ð¿ÑÐ¾Ð²Ð¾Ð´Ð¸Ð¼Ð¾ÑÑÐ¸. ÐÐ»Ñ Ð°Ð²ÑÐ¾Ð¼Ð°ÑÐ¸ÑÐµÑÐºÐ¾Ð³Ð¾ ÑÐ±Ð¾ÑÐ° Ð¸Ð½ÑÐ¾ÑÐ¼Ð°ÑÐ¸Ð¸ Ð¿ÑÐ¸Ð¼ÐµÐ½ÐµÐ½Ð° Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð° PicoScope, Ð´Ð»Ñ Ð¾Ð±ÑÐ°Ð±Ð¾ÑÐºÐ¸ Ð´Ð°Ð½Ð½ÑÑ Ð¸ Ð²Ð¸Ð·ÑÐ°Ð»Ð¸Ð·Ð°ÑÐ¸Ð¸ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÐ¾Ð² - Ð¿ÑÐ¾Ð³ÑÐ°Ð¼Ð¼Ð½ÑÐ¹ Ð¿Ð°ÐºÐµÑ Origin. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð¿Ð¾ Ð½Ð°ÑÐ¾Ð¶Ð´ÐµÐ½Ð¸Ñ Ð¾Ð¿ÑÐ¸Ð¼Ð°Ð»ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸Ð¹ ÑÐºÑÐ¿ÐµÑÐ¸Ð¼ÐµÐ½ÑÐ° Ð¼Ð¾Ð³ÑÑ Ð±ÑÑÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ñ Ð´Ð»Ñ Ð¿ÑÐ¾Ð´Ð¾Ð»Ð¶ÐµÐ½Ð¸Ñ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ð¹ Ð² Ð´Ð°Ð½Ð½Ð¾Ð¹ Ð¾Ð±Ð»Ð°ÑÑÐ¸.
description: Object of the study â paramagnetic surface centers on industrially manufactured silicon. Purpose of the study â examine properties of surface paramagnetic centers by means of ESR with registration of spin-dependent recombination (SDR) signals utilizing change in microwave conductivity. Literature review of the studied theme was compiled. Experiments aimed at finding optimal conditions of signal registration with method, used in this work, were conducted. Recorded signals were identified as signals of known surface paramagnetic centers in silicon, in agreement with previous works in the field. Experiments in low magnetic fields and experiments on registering signals without magnetic resonance were carried out, results are in compliance with theoretical predictions. Previously surface centers on silicon wafers with surface orientation (110) and (111) were not studied by means of contact-free method of registering ESR-SDR signals utilizing microwave conductivity change. For automation of data gathering program PicoScope was used, for data processing and results visualization Origin software package was utilized. This works results on optimal conditions specification may be used for further studies in this field.