cometadata/datacite-rtg-text-other-reclassification-records huggingface dataset:
Boron Doped Selective Silicon Epitaxy: High Efficiency and Process Simplification in IBC Cells
Creators: name: Récaman Payo, M.
name: Posthuma, N.
name: Uruena, A.
name: Debucquoy, M.
name: Poortmans, J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 941-946
description: The present R&D activities in crystalline silicon photovoltaics include the exploration of doping
technologies alternative to the mainstream diffusion process. The goal is to identify those technologies with potential
to increase the solar cell efficiency and reduce the cost per watt peak. In that respect, this work presents the selective
epitaxial growth (SEG) of silicon as a candidate for boron doping; showing the results of the evaluation of borondoped
silicon epitaxial emitters on slurry and diamond-coated wire sliced Czochralski material, their integration in
IBC solar cells, and the development of a novel process sequence to create the interdigitated rear junction of these
devices using SEG. Boron-doped silicon epitaxy is demonstrated to perform in the high efficiency range (>22 %) and
the use of SEG is proposed as an alternative route to simplify the number of steps in the IBC flow.
Aluminum-Oxide-Based Inversion Layer Solar Cells on n-Type c-Si
Creators: name: Werner, F.
name: Larionova, Y.
name: Zielke, D.
name: Ohrdes, T.
name: Schmidt, J.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 947-951
description: We introduce a rear-emitter inversion layer (IL) solar cell on n-type crystalline silicon (n-Si). The hole
IL is induced by the high density of negative fixed charges in an aluminum oxide (Al2O3) surface passivation layer.
Such IL emitters are shown to be of excellent quality, featuring an emitter saturation current density of the order of 3
fA/cm² and an implied open-circuit voltage of 733 mV. The effective sheet resistance of the IL is shown to decrease
from 15 – 18 kΩ/sq in the dark to 1.7 – 4.7 kΩ/sq under solar cell operating conditions. Based on two-dimensional
device simulations we show that the proposed type of n-type silicon IL solar cell has a very high efficiency potential
exceeding 26 % including contact recombination losses.
Quantifiable simulation of quantum computation beyond stochastic ensemble computation
Creators: name: Bang, Jeongho
name: Ryu, Junghee
name: Lee, Chang-Woo
name: Yee, Ki Hyuk
name: Lee, Jinhyoung
name: Son, Wonmin
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: In this study, a distinctive feature of quantum computation (QC) is characterized. To this end, a seemingly-powerful classical computing model, called "stochastic ensemble machine (SEnM)," is considered. The SEnM runs with an ensemble consisting of finite copies of a single probabilistic machine, hence is as powerful as a probabilistic Turing machine (PTM). Then the hypothesis--that is, the SEnM can effectively simulate a general circuit model of QC--is tested by introducing an information-theoretic inequality, named readout inequality. The inequality is satisfied by the SEnM and imposes a critical condition: if the hypothesis holds, the inequality should be satisfied by the probing model of QC. However, it is shown that the above hypothesis is not generally accepted with the inequality violation, namely, such a simulation necessarily fails, implying that PTM $\subseteq$ QC.
description: 8 pages, 4 figures, Advanced Quantum Technologies (2018)
Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes
Creators: name: Grant, N.E.
name: McIntosh, K.R.
name: Tan, J.
name: Rougieux, F.
name: Bullock, J.
name: Wan, Y.
name: Barugkin, C.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 883-887
description: We present a procedure to temporarily attain a very low surface recombination velocity (S) to
accurately evaluate the bulk lifetime of silicon wafers. We demonstrate three critical steps which are required to
consistently achieve very low S. Firstly, prior to immersing the silicon wafers in HF, the wafers are chemically etched
in 25% TMAH for 10 minutes. Secondly, the prepared wafers are then placed into a large plastic container filled with
150 mL of 20 wt% HF and centred over an inductive coil for PC measurements (using the WCT-120 lifetime tester).
Thirdly, to achieve very low S, the wafers are illuminated at 0.2 suns for 1 minute using a halogen lamp, the
illumination is switched off, and a PC measurement is taken. We show that S of 0.3–3 cm/s is achieved on 5–0.3 Ω-
cm n-type silicon and <1 cm/s on p-type silicon. Finially we demonstrate the potential of the technique by
examinaing hydrogenation by PECVD SiNx:H film in FZ silicon.
Integral means spectrum of whole-plane SLE
Creators: name: Beliaev, Dmitry
name: Duplantier, Bertrand
name: Zinsmeister, Michel
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mathematical Physics (math-ph)
subject: Complex Variables (math.CV)
subject: Probability (math.PR)
subject: FOS: Physical sciences
subject: FOS: Mathematics
subject: 28A80, 30C35, 30C85, 31A15, 35B50, 60J67, 60J45

description: We complete the mathematical analysis of the fine structure of harmonic measure on SLE curves that was initiated by Beliaev and Smirnov, as described by the averaged integral means spectrum. For the unbounded version of whole-plane SLE as studied by Duplantier, Nguyen, Nguyen and Zinsmeister, and Loutsenko and Yermolayeva, a phase transition has been shown to occur for high enough moments from the bulk spectrum towards a novel spectrum related to the point at infinity. For the bounded version of whole-plane SLE studied here, a similar transition phenomenon, now associated with the SLE origin, is proved to exist for low enough moments, but we show that it is superseded by the earlier occurrence of the transition to the SLE tip spectrum.
description: 14 pages, 1 figure; final version
Mechanisms of Oxygen Transfer from the Releasing Coating into the Melt during Si Ingot Crystallization
Creators: name: Champliaud, J.
name: Voytovich, R.
name: Rey, D.
name: Dechamp, C.
name: Huguet, C.
name: Drevet, B.
name: Camel, D.
name: Eustathopoulos, N.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 915-926
description: The Si3N4 releasing coating used in directional crystallization of PV silicon is well known to reduce
the O pollution of Si by comparison to CZ growth. However, coatings generally contain a significant amount of
oxygen, and it has even been shown by our group that the O concentration plays a determinant role in slowing down
the kinetics of infiltration of the coating by liquid silicon. Thus our purpose is to analyse the role of the oxygen in the
coating on the oxygen contamination of the ingot. To this end, sessile drop experiments and crystallizations of G2
size ingots are performed with coatings with different O contents. Resulting O distributions in silicon are measured
by μ-FTIR, and microstructures of the interfaces between Si and coating characterized by optical microscopy and
SEM. Three successive stages of interaction between liquid Si and coating are evidenced, namely : infiltration,
disaggregation and recrystallization of the infiltrated coating, and at last detachment of liquid Si. In this last stage,
liquid Si is no longer in contact with the oxidized coating, so that the O concentration at the interface falls down to
values lower than that of equilibrium between Si and SiO2. As proposed by Kakimoto et al, O transfer then occurs by
reduction of silica in contact with Si3N4 and transfer through the gas phase within the pores of the coating. However,
this reaction should occur preferentially inside the coating itself, rather than between the coating and the crucible. In
addition, the interface O concentrations then fall down to values lower than predicted by the equilibrium between
SiO2 and Si3N4, which indicates that limiting kinetic factors are present. The resulting reduction of the O fluxes from
the coating into the melt are estimated from the measured concentration profile in the vicinity of the interface. Such a
reduction is no longer observed when the O content of the coating is high : indeed, a highly cohesive SiO2 matrix is
then formed which prevents detachment of the liquid and eventually leads to sticking of the solidified ingot.
General conditions for maximal violation of non-contextuality in discrete and continuous variables
Creators: name: Laversanne-Finot, A.
name: Ketterer, A.
name: Barros, M. R.
name: Walborn, S. P.
name: Coudreau, T.
name: Keller, A.
name: Milman, P.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: The contextuality of quantum mechanics, i.e. the measurement outcome dependence upon previously made measurements, can be shown by the violation of inequalities based on measurements of well chosen observables. An important property of such observables is that their expectation value can be expressed in terms of probabilities of obtaining two exclusive outcomes. In order to satisfy this, inequalities have been constructed using either observables with a dichotomic spectrum or using periodic functions obtained from displacement operators in phase space. Here we identify the general conditions on the spectral decomposition of observables demonstrating state independent contextuality of quantum mechanics. As a consequence, our results not only unify existing strategies for maximal violation of state independent non-contextual inequalities but also lead to new scenarii enabling such violation. Among the consequences of our results is the impossibility of having a state independent maximal violation of non-contextuality in the Peres-Mermin scenario with discrete observables of odd dimensions.
description: 6 pages
Simulation of Optical and Electrical Properties of Solar Cells with Al2O3/SiNx Rear Dielectric Stacks
Creators: name: Bordihn, S.
name: Van Delft, J.A.
name: Mandoc, M.M.
name: Müller, J.W.
name: Kessels, W.M.M.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 836-839
description: The performance of solar cells with a rear Al2O3/SiNx dielectric passivation stack has been investigated
by a combination of optical and electrical simulations. The simulations are based on experimentally obtained surface
passivation results and optical properties of the considered Al2O3/SiNx stacks with various Al2O3 and SiNx film
thicknesses. In the optical simulations the extended net radiation method was applied. The generated optical results
served as input for the electrical simulations which were carried out by using PC1D. The optimum optical thickness
of the individual layers of the Al2O3/SiNx stacks was found to be 15 – 30 nm for the Al2O3 films and 100 – 120 nm
for the SiNx films.
Coherent-state discrimination via non-heralded probabilistic amplification
Creators: name: Rosati, Matteo
name: Mari, Andrea
name: Giovannetti, Vittorio
Publisher: name: arXiv
Year: 2016
Subjects: subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: A scheme for the detection of low-intensity optical coherent signals was studied which uses a probabilistic amplifier operated in the non-heralded version, as the underlying non-linear operation to improve the detection efficiency. This approach allows us to improve the statistics by keeping track of all possible outcomes of the amplification stage (including failures). When compared with an optimized Kennedy receiver, the resulting discrimination success probability we obtain presents a gain up to ~1.85% and it approaches the Helstrom bound appreciably faster than the Dolinar receiver, when employed in an adaptive strategy. We also notice that the advantages obtained can be ultimately associated with the fact that, in the high gain limit, the non-heralded version of the probabilistic amplifier induces a partial dephasing which preserves quantum coherence among low energy eigenvectors while removing it elsewhere. A proposal to realize such transformation based on an optical cavity implementation is presented.
description: Final version: 6 pages and 4 figures
Towards Implementation of Floating Cast Method for Growing Large-Scale High-Quality Multicryalline Silicon Ingot Using Designed Double Crucibles
Creators: name: Joonwichien, S.
name: Takahashi, I.
name: Matsushima, S.
name: Usami, N.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Feedstock, Crystallisation and Wafering

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 911-914
description: We report on our attempt to scale up the floating cast method to grow high-quality multicrystalline Si
(mc-Si) ingot using specially designed double crucibles. The cross-section of the grown ingot showed the large
crystal grain size originating from initially formed dendrite crystals around the top of the melt. Using double
crucibles, the residual melt was spontaneously removed from the inner crucible to the outer one at the final stage of
the crystal growth. Performance of small-scale solar cells revealed no significant changes between the top and the
bottom part of the ingot except the edge of the bottom due to the non-uniform removal of the melt. This suggests that
strong contact of the ingot with the crucible was successfully avoided by the double crucibles. Therefore, the floating
cast method combined with specially designed double crucibles is concluded to be feasible, which could be
implemented to realize high-quality mc-Si ingot for practical size wafers.
Systematic tests for position-dependent additive shear bias
Creators: name: van Uitert, Edo
name: Schneider, Peter
Publisher: name: arXiv
Year: 2016
Subjects: subject: Cosmology and Nongalactic Astrophysics (astro-ph.CO)
subject: FOS: Physical sciences

description: We present new tests to identify stationary position-dependent additive shear biases in weak gravitational lensing data sets. These tests are important diagnostics for currently ongoing and planned cosmic shear surveys, as such biases induce coherent shear patterns that can mimic and potentially bias the cosmic shear signal. The central idea of these tests is to determine the average ellipticity of all galaxies with shape measurements in a grid in the pixel plane. The distribution of the absolute values of these averaged ellipticities can be compared to randomized catalogues; a difference points to systematics in the data. In addition, we introduce a method to quantify the spatial correlation of the additive bias, which suppresses the contribution from cosmic shear and therefore eases the identification of a position-dependent additive shear bias in the data. We apply these tests to the publicly available shear catalogues from the Canada-France-Hawaii Telescope Lensing Survey (CFHTLenS) and the Kilo Degree Survey (KiDS) and find evidence for a small but non-negligible residual additive bias at small scales. As this residual bias is smaller than the error on the shear correlation signal at those scales, it is highly unlikely that it causes a significant bias in the published cosmic shear results of CFHTLenS. In CFHTLenS, the amplitude of this systematic signal is consistent with zero in fields where the number of stars used to model the PSF is higher than average, suggesting that the position-dependent additive shear bias originates from undersampled PSF variations across the image.
description: 15 pages, 16 figures. Replaced with accepted version
Divergences inter-juges
Creators: name: Jan, David
Publisher: name: Zenodo
Year: 2023

description: Cette étude en Suisse questionne la référentialisation du protocole d’examen de fin d’apprentissage en alternance. Des juges expérimentés doivent estimer, indépendamment les uns des autres, sur 100 apprenti·e·s minimalement compétent·e·s, combien auraient correctement répondu à chacune des 39 questions de l’examen.
description: {"references": ["Mottier Lopez, L. (2015). \u00c9valuations formative et certificative des apprentissages\u202f: Enjeux pour l'enseignement. De Boeck.", "Loye, N. (2019). Et si la validation \u00e9tait plus qu'une suite de proc\u00e9dures techniques\u202f? Mesure et \u00e9valuation en \u00e9ducation, 41(1), 97\u2011123. https://doi.org/10.7202/1055898ar", "Figari, G., & Remaud, D. (2014). M\u00e9thodologie d'\u00e9valuation en \u00e9ducation et formation. Ou l'enqu\u00eate \u00e9valuative. De Boeck Sup\u00e9rieur; Cairn.info. https://www.cairn.info/methodologie-d-evaluation-en-education-et-formatio\u20139782804184773.htm", "Angoff, W. H. (1984). Scales, Norms, and Equivalent Scores. Educational Testing Service.", "Andrew F. Hayes & Klaus Krippendorff (2007) Answering the Call for a Standard Reliability Measure for Coding Data, Communication Methods and Measures, 1:1, 77-89, DOI: 10.1080/19312450709336664"]}
On the mesh nonsingularity of the moving mesh PDE method
Creators: name: Huang, Weizhang
name: Kamenski, Lennard
Publisher: name: arXiv
Year: 2015
Subjects: subject: Numerical Analysis (math.NA)
subject: FOS: Mathematics
subject: G.1
subject: 65N50, 65K10

description: The moving mesh PDE (MMPDE) method for variational mesh generation and adaptation is studied theoretically at the discrete level, in particular the nonsingularity of the obtained meshes. Meshing functionals are discretized geometrically and the MMPDE is formulated as a modified gradient system of the corresponding discrete functionals for the location of mesh vertices. It is shown that if the meshing functional satisfies a coercivity condition, then the mesh of the semi-discrete MMPDE is nonsingular for all time if it is nonsingular initially. Moreover, the altitudes and volumes of its elements are bounded below by positive numbers depending only on the number of elements, the metric tensor, and the initial mesh. Furthermore, the value of the discrete meshing functional is convergent as time increases, which can be used as a stopping criterion in computation. Finally, the mesh trajectory has limiting meshes which are critical points of the discrete functional. The convergence of the mesh trajectory can be guaranteed when a stronger condition is placed on the meshing functional. Two meshing functionals based on alignment and equidistribution are known to satisfy the coercivity condition. The results also hold for fully discrete systems of the MMPDE provided that the time step is sufficiently small and a numerical scheme preserving the property of monotonically decreasing energy is used for the temporal discretization of the semi-discrete MMPDE. Numerical examples are presented.
description: Revised and improved version of the WIAS preprint
Optimisation of N+ Diffusion and Contact Size of IBC Solar Cells
Creators: name: Fong, K.C.
name: Teng, K.
name: McIntosh, K.R.
name: Blakers, A.W.
name: Franklin, E.
name: Ngwe, S.Z.
name: Fell, A.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 851-855
description: The Australian National University (ANU) recently fabricated a 24.6% ± 0.5% efficiency IBC solar cell
on n-type Cz-Si. This paper discusses the optimisation of the diffusions and contact openings of that solar cell, which
combined detailed characterisation with 3D device modelling. Given the many competing effects in an IBC cell
structure, the optimal diffusion profiles and geometry are very dependent on the device fabrication technology,
particularly on the surface passivations and metalisation techniques. The crucial device parameters are discussed and the
method of experimentally measuring the surface passivation quality, emitter recombination, contact recombination and
specific contact resistivity are presented. With these experimental values and 3D device modelling, efficiency contour
plots are generated for a pertinent range of phosphorus sheet resistance and contact fraction.
Emergent Super-Virasoro on Magnetic Branes
Creators: name: D'Hoker, Eric
name: Pourhamzeh, Bijan
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Theory (hep-th)
subject: FOS: Physical sciences

description: The low energy limit of the stress tensor, gauge current, and supercurrent two-point correlators are calculated in the background of the supersymmetric magnetic brane solution to gauged five-dimensional supergravity constructed by Almuhairi and Polchinski. The resulting correlators provide evidence for the emergence of an N=2 super-Virasoro algebra of right-movers, in addition to a bosonic Virasoro algebra and a $U(1) \oplus U(1)$-current algebra of left-movers (or the parity transform of left- and right-movers depending on the sign of the magnetic field), in the holographically dual strongly interacting two-dimensional effective field theory of the lowest Landau level.
description: 66 pages, 4 figures; minor edits and corrections in version three
Advanced Interface Trap Metrology for Silicon PV
Creators: name: D'Amico, J.
name: Wilson, M.
name: Almeida, C.
name: Lagowski, J.
name: Olibet, S.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 877-882
description: We present an effective solution to a very difficult issue - namely interface trap density, Dit, spectra
measurements on silicon PV dielectrics that exhibit large dielectric leakage. To achieve that goal, a noncontact,
preparation-free corona C-V technique originally developed for silicon microelectronics is effectively modified
regarding hardware and software. Application examples include SiNx, Al2O3, and various dielectric stacks. Results
demonstrate significant Dit dependence on 1. dielectric deposition; 2. post-deposition firing; and 3. the interfacial
layer. Interface trap mapping, using the present technique, highlights the issue of interface passivation defect nonuniformity
denoted by high Dit regions on PV samples and, when compared with effective lifetime mapping, provides
a unique site-by-site correlation between surface recombination and the interface trap density.
A Probabilistic Angle on One Loop Scalar Integrals
Creators: name: Benhaddou, Kamel
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mathematical Physics (math-ph)
subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences
subject: 81Q30

description: Recasting the $N$-point one loop scalar integral as a probabilistic problem, allows the derivation of integral recurrence relations as well as exact analytical expressions in the most common cases. $ε$ expansions are derived by writing a formula that relates an $N$-point function in decimal dimension to an $N$-point function in integer dimension. As an example, we give relations for the massive 5-point function in dimension $n=4-2ε$, $n=6-2ε$. The reduction of tensor integrals of rank 2 with $N=5$ is achieved showing the method's potential. Hypergeometric functions are not needed but only integration of arcsine function whose analytical continuation is well known.
description: 35 pages, no figures
Effect of Dislocations on the Electrical Response of Multicrystalline Silicon Solar Cells
Creators: name: Søndenå, R.
name: Gjessing, J.
name: Angelskår, H.
name: Nordseth, O.
name: Foss, S.E.
name: Stensrud Marstein, E.S.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 872-876
description: The quality of multicrystalline silicon solar material for solar cell production depends on the feedstock and the crystallization process. Impurities are introduced by the feedstock itself or by in-diffusion from the crucible or the atmosphere during solidification. Grain boundaries and dislocations formed during the solidification will also affect the final solar cell performance. Highly detrimental dislocation clusters are frequently observed in commercially available multicrystalline silicon wafers [1]. The dislocation clusters grow during continued solidification covering larger areas towards the top of the ingot. By tracing the dislocations down in an ingot their origin can often be found in grain boundaries or other imperfections in the silicon crystal [2]. These localized regions with high dislocation densities dramatically reduce the minority carrier lifetime and therefore limit the solar cell efficiency.
On the Upsilon invariant and satellite knots
Creators: name: Feller, Peter
name: Park, JungHwan
name: Ray, Arunima
Publisher: name: arXiv
Year: 2016
Subjects: subject: Geometric Topology (math.GT)
subject: FOS: Mathematics
subject: 57M25, 57M27

description: We study the effect of satellite operations on the Upsilon invariant of Ozsvath-Stipsicz-Szabo. We obtain results concerning when a knot and its satellites are independent; for example, we show that the set $\{D_{2^i,1}\}_{i=1}^\infty$ is a basis for an infinite rank summand of the group of smooth concordance classes of topologically slice knots, for D the positive clasped untwisted Whitehead double of any knot with positive tau-invariant, e.g. the right-handed trefoil. We also prove that the image of the Mazur satellite operator on the smooth knot concordance group contains an infinite rank subgroup of topologically slice knots.
description: 20 pages, 4 figures, to appear in Mathematische Zeitschrift
The Relevance of PV Electricity Imports from Middle East North Africa (Mena) Countries - The PV Parity Project
Creators: name: Weiss, I.
name: Caneva, S.
name: Arancón, S.
name: Masson, G.
name: Latour, M.
name: Sinke, W.C.
name: Olson, C.
name: Veltkamp, T.
name: Tsoutsos, T.
name: Tournaki, S.
name: Pause, F.
name: De Mango, F.
name: Bastone, L.
name: Raganella, M.
name: Dalla Chiesa, C.
name: Strbac, G.
name: Pudjianto, D.
name: Auer, H.
name: Lettner, G.
name: Montoya, C.
name: Vázquez, R.
name: Guilmard, S.
Publisher: name: WIP
Year: 2013
Subjects: PV - A MAJOR ELECTRICITY SOURCE
PV in the Electricity Markets

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 4783-4786
description: The RES Directive 2009/28/CE paves the way for a solid cooperation between European Member states but also
reinforces the international collaboration with third countries such as the Middle East and North African (MENA)
countries. Articles 9 and 10 of the RES Directive regulate the implementation of joint projects between one or more
European Member States and one or more third countries in order to enhance the cross border exchange of renewable
energy.
Besides their high solar potential, only few MWp of PV have been installed until today in MENA countries. Even
though the RES Directive provides the European Member States with clear guidelines on how to implement the cross
border exchange of renewable energy, until now the European Members States have not implemented the flexible
mechanisms to exchange renewable energy among European Member States and third countries. In order to unblock this
situation and to reach a cross border exchange of renewable energy, European Member States have to be provided with
additional tools and information on the relevance of PV electricity imports from MENA countries.
The PV Parity project aims at defining an appropriate policy and legal framework to improve the PV electricity
imports from MENA countries. This will be done by:
 definition of the competitiveness of PV electricity import from MENA countries
 overview of the situation in the MENA countries
 cost analysis of the investments needed for the PV electricity imports from MENA countries
 market frameworks for the cross border exchange of electricity between Member States and MENA countries
 roadmaps towards the competitiveness of PV electricity import from MENA countries
 proposal for an incentive schemes for MENA countries
 policy recommendation to National and European policy makers for a sustainable growth of PV
This paper provides an overview of the results achieved until now within the PV parity project, which are:
• definition of the competitiveness of PV electricity import from MENA countries
• overview of the situation in the MENA countries
• market frameworks for the cross border exchange of electricity between Member States and MENA countries
• roadmaps towards the competitiveness of PV electricity import from MENA countries
""Rooftop BIIPV GIS"" Research Project
Creators: name: Gomez Gane, D.
Publisher: name: WIP
Year: 2013
Subjects: PV - A MAJOR ELECTRICITY SOURCE
PV Business Opportunities

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 4815-4826
description: What have we got in the built environment/our urban settings in terms of aspect of buildings and tilt of
rooftops useful for BIIPV integration and how many could we evaluate as being as close as possible to PV [/ST] modules
“ideal” placement (according to latitude, longitude, irradiation levels and other parameters) to enhance future
important exploitation of the full potential of solar irradiation?
The proposed study case is intended to be an easy built environment/urban setting [G.I.S. based] tool to aid decision
makers such as urban planners, legislators, councillors, etc. to evaluate precisely and quickly, as well as cost-effectively,
the most suitable locations to integrate photo-voltaic and solar thermal panels in highly urbanized settings, via the use of
at least the following technological means: available shadow[s]-inclusive aerial imagery, photogrammetry and
stereoscopy and Auto-cad and G.I.S. computer programs, all either merged, if possible, or efficiently managed together.
The proposed “Perpendicular Line” method is useful to find unknown rooftop tilts and overshadowing end conditions.
Buildings and urban forestry overshadowing effects are left for future research work to investigate.
Discussion and Simulation about the Evaluation of the Emitter Series Resistance
Creators: name: Micard, G.
name: Hahn, G.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 815-821
description: The emitter series resistances (Rs,emi) can be extracted from experimentally measured JV curves using
the two-light intensity method (TLIM) but it can also be calculated from the emitter geometry using analytical
formulas and finally also computed with arbitrary precision using finite element simulation (FES). On the one hand
formulas and FES consider Rs,emi as distributed, on the other hand the TLIM assumes Rs,emi not to be distributed. The
derivation of formulas for a lumped Rs,emi assumes a spatially uniform current density source, which is the case in
short circuit condition (Jsc), less at maximum power point (mpp) and is wrong at open circuit. We compare at mpp the
results of TLIM, analytical formulas and FES for which the current density source is a 1D simulated JV curve. In the
case of a low/high sheet resistance homogeneous emitter, but also for a selective emitter, these methods agree well
and the impact on cell efficiency is particularly small. This is partially explained by the fact that the voltage drop and
so the spatial distribution of the current density source over the emitter is small at mpp. We also clarify many issues
about the various methods used and discuss the limitation of not taking into account Joule losses induced by
diffusion.
Impact of Different System Layouts and -Components on the Direct Consumption and Autarky of Utility-Scale PV Power Plants
Creators: name: Schäfer, T.
name: Egler, M.
name: Mack, M.
Publisher: name: WIP
Year: 2013
Subjects: PV - A MAJOR ELECTRICITY SOURCE
PV in the Electricity Markets

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 4787-4792
description: In the context of rising energy costs, the direct marketing of solar electric energy generated by PV
systems becomes increasingly interesting for households. For this, usually, standardized energy production profiles of
south orientated, roof mounted PV systems are compared to the corresponding standard load profile. There, a balance
sheet cover of the energy consumption and production is normally chosen for reference. Typically there results a ratio
between consumption on-site and PV energy generation of 30 %. This value is well established in the meantime.
Commerce and industry has to face increasing costs for energy, too. There, especially potentially rising costs for
CO2-certificates may fuel this issue. At the same time, generation costs for electric energy generated by PV systems
decreases, which leads to more and more commerce and industry direct consumption schemes.
The present paper investigates the ratio of consumption on site as well as that of the autarky – ratio of PV energy
consumption – considering different energy production and load profiles of commerce and industry. Influences on the
generation profiles due to site-specific meteorology, PV plant layouts and PV system “performances” are accounted
for as well as effects arising from different load profiles.
Performance Analysis on Silicon Heterojunction Rear Emitter Solar Cells
Creators: name: Chien, Y.-J.
name: Chen, M.Y.
name: Liu, J.S.Q
name: Chang, J.
name: Chang, Y.-L.
name: Huang, M.-Y.
name: Yang, P.-C.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Characterisation and Modelling

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 811-814
description: Inspired by the simulation study [1], we invested efforts on the silicon heterojunction (SHJ) rear emitter solar cells for the
potential of efficiency gains. Special SHJ solar cells with identical metal contacts on both sides were fabricated at AUO (AU Optronics) RD
line. Comparison of the cells with front and rear emitter configurations was accomplished by IV curve measurement on the same cell but with
standard AM1.5 illumination on the different side. Higher fill factor, slightly lower Voc and Jsc were observed on the rear emitter setup. For
further investigation of rear emitter solar cells, solar cell device simulations using AFORS-HET were performed. In this paper, the performance
of SHJ rear emitter solar cell was carefully analyzed showing strong dependence on the defect density near the light receiving side.
Time-resolved statistics of photon pairs in two-cavity Josephson photonics
Creators: name: Dambach, Simon
name: Kubala, Björn
name: Ankerhold, Joachim
Publisher: name: arXiv
Year: 2016
Subjects: subject: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
subject: Superconductivity (cond-mat.supr-con)
subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: We analyze the creation and emission of pairs of highly nonclassical microwave photons in a setup where a voltage-biased Josephson junction is connected in series to two electromagnetic oscillators. Tuning the external voltage such that the Josephson frequency equals the sum of the two mode frequencies, each tunneling Cooper pair creates one additional photon in both of the two oscillators. The time-resolved statistics of photon emission events from the two oscillators is investigated by means of single- and cross-oscillator variants of the second-order correlation function $g^{(2)}(τ)$ and the waiting-time distribution $w(τ)$. They provide insight into the strongly correlated quantum dynamics of the two oscillator subsystems and reveal a rich variety of quantum features of light including strong antibunching and the presence of negative values in the Wigner function.
description: 9 pages, 7 figures; invited contribution to special volume "FQMT'15: Frontiers of Quantum and Mesoscopic Thermodynamics (Prague, Czech Republic, 27 July - 1 August 2015)"
Algorithm for computing $μ$-bases of univariate polynomials
Creators: name: Hong, Hoon
name: Hough, Zachary
name: Kogan, Irina A.
Publisher: name: arXiv
Year: 2016
Subjects: subject: Algebraic Geometry (math.AG)
subject: Symbolic Computation (cs.SC)
subject: Commutative Algebra (math.AC)
subject: FOS: Mathematics
subject: FOS: Computer and information sciences
subject: 12Y05, 13P10, 14Q05, 68W30

description: We present a new algorithm for computing a $μ$-basis of the syzygy module of $n$ polynomials in one variable over an arbitrary field $\mathbb{K}$. The algorithm is conceptually different from the previously-developed algorithms by Cox, Sederberg, Chen, Zheng, and Wang for $n=3$, and by Song and Goldman for an arbitrary $n$. It involves computing a "partial" reduced row-echelon form of a $ (2d+1)\times n(d+1)$ matrix over $\mathbb{K}$, where $d$ is the maximum degree of the input polynomials. The proof of the algorithm is based on standard linear algebra and is completely self-contained. It includes a proof of the existence of the $μ$-basis and as a consequence provides an alternative proof of the freeness of the syzygy module. The theoretical (worst case asymptotic) computational complexity of the algorithm is $O(d^2n+d^3+n^2)$. We have implemented this algorithm (HHK) and the one developed by Song and Goldman (SG). Experiments on random inputs indicate that SG gets faster than HHK when $d$ gets sufficiently large for a fixed $n$, and that HHK gets faster than SG when $n$ gets sufficiently large for a fixed $d$.
description: 34 pages, 6 figures
Fast phase retrieval for high dimensions: A block-based approach
Creators: name: Rajaei, Boshra
name: Gigan, Sylvain
name: Krzakala, Florent
name: Daudet, Laurent
Publisher: name: arXiv
Year: 2016
Subjects: subject: Information Theory (cs.IT)
subject: FOS: Computer and information sciences

description: This paper addresses fundamental scaling issues that hinder phase retrieval (PR) in high dimensions. We show that, if the measurement matrix can be put into a generalized block-diagonal form, a large PR problem can be solved on separate blocks, at the cost of a few extra global measurements to merge the partial results. We illustrate this principle using two distinct PR methods, and discuss different design trade-offs. Experimental results indicate that this block-based PR framework can reduce computational cost and memory requirements by several orders of magnitude.
Theoretical Limit for the Contribution of Solar Photovoltaic Energy to the Electricity Mix
Creators: name: Baena, F.
name: Terrados, J.
name: Almonacid, G.
name: Gómez Vidal, P.
Publisher: name: WIP
Year: 2013
Subjects: PV - A MAJOR ELECTRICITY SOURCE
PV in the Electricity Markets

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 4805-4808
description: The ability of PV solar energy for a massive integration in a big electricity grid depends on the
availability of the solar resource, on the availability of photovoltaic installations and on the grid capacity to host and
transport the electricity output. But even if there is enough solar resource, photovoltaic installations and power grid,
demand and PV generation may not be coupled, either in magnitude or in time, producing a limited energy
contribution to the grid. This work is aimed to identify the theoretical limit imposed by the electricity demand for the
network penetration of solar photovoltaic, without storage or considered international exchanges. It proposes a
method based on idealized demand and PV generation curves and the best case scenario for the surrounding
conditions. Knowledge of these limits will allow us to have a clear reference for power sector planning and to provide
confidence on the feasibility of the integration of future PV projects in the electrical system and the match of the PV
generation capacity with the electricity demand. With the proposed methodology it wil be possible to determine the
maximum PV contribution to the electricity mix and to provide further tools to improve the energy planning for a
determined territory, regardless of storage or exchanges between power grids.
Technologies for Mass Production of >20% Efficient p-Type Silicon Solar Cells
Creators: name: Mack, S.
name: Wolf, A.
name: Thaidigsmann, B.
name: Lohmüller, E.
name: Jäger, U.
name: Pospischil, M.
name: Clement, F.
name: Eberlein, D.
name: Preu, R.
name: Biro, D.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Silicon Solar Cell Improvements

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 761-765
description: This paper summarizes the results of the project “MASSE”, which focused on the research and
development of technologies and process sequences for mass production of 20 % efficient monocrystalline p-type
silicon solar cells. This goal is addressed by the use of PERC (passivated emitter and rear cell) and MWT-PERC
(metal wrap through PERC) structures. Within the frame of the project, several technologies have been investigated
in detail and optimised carefully. The various technologies are modular, which allows for an application both in
PERC and MWT-PERC structures. We propose the use of thermal oxidation for simultaneous high quality front and
rear surface passivation. On high-quality float-zone silicon, which we use for determining the efficiency potential of
these structures, the best PERC solar cells achieve a conversion efficiency of 20.0 %; reduced shading in MWTPERC
type devices increases this value to 20.3 %. In both cases, screen printing forms the front and rear contacts.
The implementation of dispensed silver front contacts in MWT-PERC structures increases the maximum cell
efficiency even further to 20.6 %. Solder pads enable module assembly with existing equipment. By using rectangular
masks for aperture area definition, conversion efficiencies of 17.7% for PERC and 18.2% for MWT-PERC modules
are measured.
$Z'$, Higgses and heavy neutrinos in $U(1)'$ models: from the LHC to the GUT scale
Creators: name: Accomando, Elena
name: Coriano, Claudio
name: Rose, Luigi Delle
name: Fiaschi, Juri
name: Marzo, Carlo
name: Moretti, Stefano
Publisher: name: arXiv
Year: 2016
Subjects: subject: High Energy Physics - Phenomenology (hep-ph)
subject: FOS: Physical sciences

description: We study a class of non-exotic minimal $U(1) '$ extensions of the Standard Model, which includes all scenarios that are anomaly-free with the ordinary fermion content augmented by one Right-Handed neutrino per generation, wherein the new Abelian gauge group is spontaneously broken by the non-zero Vacuum Expectation Value of an additional Higgs singlet field, in turn providing mass to a $Z'$ state. By adopting the $B-L$ example, whose results can be recast into those pertaining to the whole aforementioned class, and allowing for both scalar and gauge mixing, we first extract the surviving parameter space in presence of up-to-date theoretical and experimental constraints. Over the corresponding parameter configurations, we then delineate the high energy behaviour of such constructs in terms of their stability and perturbativity. Finally, we highlight key production and decay channels of the new states entering the spectra of this class of models, i.e., heavy neutrinos, a second Higgs state and the $Z'$, which are amenable to experimental investigation at the Large Hadron Collider. We therefore set the stage to establish a direct link between measurements obtainable at the Electro-Weak scale and the dynamics of the underlying model up to those where a Grand Unification Theory embedding a $U(1)'$ can be realised.
description: 32 pages, 59 figures, journal version
Research Status of 5 Inch ELPS Solar Cells and Modules at Canadian Solar Inc.
Creators: name: Woo, J.
name: Jiang, L.
name: Wang, X.-S.
name: Zhang, L.
Publisher: name: WIP
Year: 2013
Subjects: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Manufacturing Issues and Processing

description: 28th European Photovoltaic Solar Energy Conference and Exhibition; 785-788
description: ELPS (Efficient, Long- Term, Photovoltaic Solution) technology has been developed at CSI. Five-inch
ELPS cells combine both metal wrap through (MWT) and selective emitter (SE) structures to obtain average cell
efficiency 19.41% and champion 19.78%. Front metal pattern, SE structure, via metallization, and the cell
interconnection have been optimized to achieve high cell performance. Modules power using 72 pcs of 5-inch MWT
cells reaches average value over 210W, with the maximum 214.5W, certificated by TÜV. With extra layer of solder
resist on the cell and special layout of the back electrodes, the interconnection becomes much easier for tabbing. It
proves 5-inch ELPS technology is ready for transfer from the lab to the production floor at CSI.
Photodissociation of ultracold diatomic strontium molecules with quantum state control
Creators: name: McDonald, M.
name: McGuyer, B. H.
name: Apfelbeck, F.
name: Lee, C. -H.
name: Majewska, I.
name: Moszynski, R.
name: Zelevinsky, T.
Publisher: name: arXiv
Year: 2015
Subjects: subject: Atomic Physics (physics.atom-ph)
subject: Quantum Physics (quant-ph)
subject: FOS: Physical sciences

description: Chemical reactions at ultracold temperatures are expected to be dominated by quantum mechanical effects. Although progress towards ultracold chemistry has been made through atomic photoassociation, Feshbach resonances and bimolecular collisions, these approaches have been limited by imperfect quantum state selectivity. In particular, attaining complete control of the ground or excited continuum quantum states has remained a challenge. Here we achieve this control using photodissociation, an approach that encodes a wealth of information in the angular distribution of outgoing fragments. By photodissociating ultracold 88Sr2 molecules with full control of the low-energy continuum, we access the quantum regime of ultracold chemistry, observing resonant and nonresonant barrier tunneling, matter-wave interference of reaction products and forbidden reaction pathways. Our results illustrate the failure of the traditional quasiclassical model of photodissociation and instead are accurately described by a quantum mechanical model. The experimental ability to produce well-defined quantum continuum states at low energies will enable high-precision studies of long-range molecular potentials for which accurate quantum chemistry models are unavailable, and may serve as a source of entangled states and coherent matter waves for a wide range of experiments in quantum optics.