title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¸Ð·Ð»ÑÑÐµÐ½Ð¸Ñ InAs/GaInP Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑ Ð¸ Ð¼Ð¸ÐºÑÐ¾Ð´Ð¸ÑÐºÐ¾Ð²ÑÑ Ð»Ð°Ð·ÐµÑÐ¾Ð² Ð½Ð° Ð¸Ñ Ð¾ÑÐ½Ð¾Ð²Ðµ
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð±Ð°ÐºÐ°Ð»Ð°Ð²ÑÐ°
titleType: Subtitle
title: Investigation of the emission of InAs/GaInP nanostructures and microdisk lasers based on them
Creators: name: ÐÐµÑÐµÑÐºÐ¾ÐºÐ¾Ð²Ð°, ÐÐ°Ð»ÐµÑÐ¸Ñ
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2024
Subjects: ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÐµ ÑÐ¾ÑÐºÐ¸
Ð»Ð°Ð·ÐµÑÐ½Ð°Ñ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ñ
Ð¼Ð¸ÐºÑÐ¾ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾Ñ
Ð¼Ð¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ñ
Ð¿Ð¾ÑÐ¾Ð³Ð¾Ð²Ð°Ñ Ð¼Ð¾ÑÐ½Ð¾ÑÑÑ
Ð°ÑÑÐµÐ½Ð¸Ð´ Ð¸Ð½Ð´Ð¸Ñ
ÐÐÐ¡-Ð³Ð¸Ð´ÑÐ¸Ð´Ð½Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð¼Ð¾Ð´Ñ ÑÐµÐ¿ÑÑÑÐµÐ¹ Ð³Ð°Ð»ÐµÑÐµÐ¸
Ð²ÑÐµÐ¼Ñ Ð¶Ð¸Ð·Ð½Ð¸
quantum dots
lasing
microcavity
microphotoluminescence
threshold power
indium arsenide
MOCVD epitaxy
whispering gallery modes
luminescence lifetime

description: Ð ÑÐ°Ð¼ÐºÐ°Ñ Ð½Ð°ÑÑÐ¾ÑÑÐµÐ¹ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¾ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¾ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¼Ð¸ÐºÑÐ¾ÑÐ¾ÑÐ¾Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¾ÑÐµÐº InAs/GaInP Ð¸ Ð¼Ð¸ÐºÑÐ¾ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÐ¾Ð² Ð½Ð° Ð¸Ñ Ð¾ÑÐ½Ð¾Ð²Ðµ. ÐÑÐ¸ Ð¾Ð¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ð½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ ÑÐ¾ÑÑÐ° InAs Ð½Ð° GaInP ÑÐ¾ÑÐ¼Ð¸ÑÑÐµÑÑÑ Ð¼Ð°ÑÑÐ¸Ð² ÐºÐ²Ð°Ð½ÑÐ¾Ð²ÑÑ ÑÐ¾ÑÐµÐº Ð¼Ð°Ð»Ð¾Ð¹ Ð¿Ð»Ð¾ÑÐ½Ð¾ÑÑÐ¸, Ð¸Ð·Ð»ÑÑÐ°ÑÑÐ¸Ñ Ð² Ð´Ð¸Ð°Ð¿Ð°Ð·Ð¾Ð½Ðµ 900-980 Ð½Ð¼.Â  ÐÑÐ¸ ÑÑÐ¾Ð¼ Ð²ÑÐµÐ¼Ñ Ð¶Ð¸Ð·Ð½Ð¸ Ð»ÑÐ¼Ð¸Ð½ÐµÑÑÐµÐ½ÑÐ¸Ð¸ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÐµÑ 1.2 Ð½Ñ. ÐÐ· Ð¸ÑÑÐ¾Ð´Ð½Ð¾Ð¹ ÑÑÑÑÐºÑÑÑÑ ÑÑÐ¾ÑÐ¼Ð¸ÑÐ¾Ð²Ð°Ð½Ñ Ð¼Ð¸ÐºÑÐ¾Ð´Ð¸ÑÐºÐ¾Ð²ÑÐµ ÑÐµÐ·Ð¾Ð½Ð°ÑÐ¾ÑÑ Ñ Ð´Ð¾Ð±ÑÐ¾ÑÐ½Ð¾ÑÑÑÑ 4000 â 6000, Ð¾Ð¿ÑÐ¸ÑÐµÑÐºÐ°Ñ Ð½Ð°ÐºÐ°ÑÐºÐ° ÐºÐ¾ÑÐ¾ÑÑÑ Ð¿ÑÐ¸Ð²Ð¾Ð´Ð¸Ñ Ðº Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð¹ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ð¸ Ð½Ð° Ð¼Ð¾Ð´Ð°Ñ ÑÐµÐ¿ÑÑÑÐµÐ¹ Ð³Ð°Ð»ÐµÑÐµÐ¸. ÐÐ¿ÑÐµÐ´ÐµÐ»ÐµÐ½Ñ Ð·Ð½Ð°ÑÐµÐ½Ð¸Ñ Ð¿Ð¾ÑÐ¾Ð³Ð¾Ð²Ð¾Ð¹ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸, ÐºÐ¾ÑÐ¾ÑÑÐµ ÑÐ¾ÑÑÐ°Ð²Ð»ÑÑÑ 20 Ð¼ÐºÐÑ Ð´Ð»Ñ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ð¸ ÑÐµÑÐµÐ· Ð¾ÑÐ½Ð¾Ð²Ð½Ð¾Ðµ ÑÐ¾ÑÑÐ¾ÑÐ½Ð¸Ðµ Ð¸ 80 Ð¼ÐºÐÑ Ð´Ð»Ñ Ð³ÐµÐ½ÐµÑÐ°ÑÐ¸Ð¸ ÑÐµÑÐµÐ· Ð²Ð¾Ð·Ð±ÑÐ¶Ð´ÐµÐ½Ð½Ð¾Ðµ Ð¿ÑÐ¸ 77 Ð. ÐÐ¿ÑÐ¸ÑÐµÑÐºÐ°Ñ Ð½Ð°ÐºÐ°ÑÐºÐ° Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð° ÐºÐ°Ðº Ð² Ð½ÐµÐ¿ÑÐµÑÑÐ²Ð½Ð¾Ð¼, ÑÐ°Ðº Ð¸ Ð² Ð¸Ð¼Ð¿ÑÐ»ÑÑÐ½Ð¾Ð¼ ÑÐµÐ¶Ð¸Ð¼Ð°Ñ. ÐÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð¸Ð¼Ð¿ÑÐ»ÑÑÐ½Ð¾Ð³Ð¾ ÑÐµÐ¶Ð¸Ð¼Ð° Ð¿Ð¾Ð·Ð²Ð¾Ð»Ð¸Ð»Ð¾ Ð¾Ð¿ÑÐµÐ´ÐµÐ»Ð¸ÑÑ Ð¿Ð¾ÑÐ¾Ð³Ð¾Ð²ÑÐµ Ð¼Ð¾ÑÐ½Ð¾ÑÑÐ¸ ÑÐ°ÐºÐ¶Ðµ Ð¿ÑÐ¸ Ð¿Ð¾Ð²ÑÑÐµÐ½Ð½ÑÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ°Ñ. ÐÑÐ¾Ð´ÐµÐ¼Ð¾Ð½ÑÑÑÐ¸ÑÐ¾Ð²Ð°Ð½Ð° Ð²Ð¾Ð·Ð¼Ð¾Ð¶Ð½Ð¾ÑÑÑ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÐ½Ð¾Ð¹ Ð¿Ð¾Ð´ÑÑÑÐ¾Ð¹ÐºÐ¸ Ð¾Ð´Ð¸Ð½Ð¾ÑÐ½Ð¾Ð¹ Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑÑ Ð¸ ÑÐµÐ·Ð¾Ð½Ð°Ð½ÑÐ½Ð¾Ð¹ Ð¼Ð¾Ð´Ñ. ÐÐ±ÑÐ¸Ð¼ Ð²ÑÐ²Ð¾Ð´Ð¾Ð¼ Ð¿ÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð½Ð¾Ð¹ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐµÑÑÑ Ð·Ð°ÐºÐ»ÑÑÐµÐ½Ð¸Ðµ Ð¾ Ð¿ÐµÑÑÐ¿ÐµÐºÑÐ¸Ð²Ð½Ð¾ÑÑÐ¸ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ñ Ð¸ÑÑÐ»ÐµÐ´ÑÐµÐ¼Ð¾Ð¹ Ð½Ð°Ð½Ð¾ÑÑÑÑÐºÑÑÑÑ Ð² ÐºÐ°ÑÐµÑÑÐ²Ðµ Ð°ÐºÑÐ¸Ð²Ð½Ð¾Ð¹ ÑÑÐµÐ´Ñ Ð¼Ð¸ÐºÑÐ¾Ð»Ð°Ð·ÐµÑÐ°. ÐÐ¾Ð»ÑÑÐµÐ½Ð½ÑÐµ ÑÐµÐ·ÑÐ»ÑÑÐ°ÑÑ Ð±ÑÐ´ÑÑ Ð¸Ð½ÑÐµÑÐµÑÐ½Ñ Ð¾ÑÐ³Ð°Ð½Ð¸Ð·Ð°ÑÐ¸ÑÐ¼, Ð·Ð°Ð½Ð¸Ð¼Ð°ÑÑÐ¸Ð¼ÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸ÐµÐ¼ Ð¸ ÑÐ°Ð·ÑÐ°Ð±Ð¾ÑÐºÐ¾Ð¹ ÑÐ»ÐµÐ¼ÐµÐ½ÑÐ¾Ð² ÑÐ¾ÑÐ¾Ð½Ð¸ÐºÐ¸.
description: In the framework of the present work the study of microphotoluminescence of InAs/GaInP quantum dots and microcavity based on them was carried out. Under certain conditions of InAs growth on GaInP, an array of low-density quantum dots emitting in the range of 900-980 nm is formed.Â  At the same time, the luminescence lifetime is 1.2 ns. Microdisk cavities with a qualities of 4000 - 6000 are formed from the initial structure, optical pumping of which leads to laser generation on the whispering gallery modes. The threshold power values are determined, which are 20 Î¼W for generation through the ground state and 80 Î¼W for generation through the excited state at 77 K. Optical pumping was carried out in both continuous and pulsed modes. The use of the pulsed mode allowed us to determine the threshold powers also at increased temperatures. The possibility of temperature tuning of single nanostructure and resonant mode was demonstrated. The general conclusion of the conducted work is following: the investigated nanostructure is perspective for use as an active region of microlasers. The obtained results will be of interest to organizations engaged in research and development of photonics elements.