title: ÐÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð½Ð°ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐ°Ð´Ð¸Ð¹ ÑÐ¾ÑÑÐ° Ð½Ð° ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ GaN/AlGaN Ñ Ð´Ð²ÑÐ¼ÐµÑÐ½ÑÐ¼ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¼ Ð³Ð°Ð·Ð¾Ð¼, Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸
title: Ð²ÑÐ¿ÑÑÐºÐ½Ð°Ñ ÐºÐ²Ð°Ð»Ð¸ÑÐ¸ÐºÐ°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ ÑÐ°Ð±Ð¾ÑÐ° Ð¼Ð°Ð³Ð¸ÑÑÑÐ°
titleType: Subtitle
title: Investigation of the effect of the initial stages of growth on the properties of GaN/AlGaN heterostructures with twoâdimensional electron gas obtained by molecular beam epitaxy
Creators: name: ÐÐ°ÑÐ°ÑÐ¸Ð½, ÐÐ»ÐµÐ³
Publisher: name: Ð¡Ð°Ð½ÐºÑ-ÐÐµÑÐµÑÐ±ÑÑÐ³ÑÐºÐ¸Ð¹ Ð¿Ð¾Ð»Ð¸ÑÐµÑÐ½Ð¸ÑÐµÑÐºÐ¸Ð¹ ÑÐ½Ð¸Ð²ÐµÑÑÐ¸ÑÐµÑ ÐÐµÑÑÐ° ÐÐµÐ»Ð¸ÐºÐ¾Ð³Ð¾
Year: 2022
Subjects: ÐÐµÑÐ°Ð»Ð»Ñ Ð¿ÐµÑÐµÑ Ð¾Ð´Ð½ÑÐµ, Ð½Ð¸ÑÑÐ¸Ð´Ñ
Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð°Ñ Ð»ÑÑÐµÐ²Ð°Ñ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ñ
Ð´Ð²ÑÐ¼ÐµÑÐ½ÑÐ¹ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¹ Ð³Ð°Ð·
two-dimensional electron gas
molecular beam epitaxy

description: Ð¡ÑÑÑÐºÑÑÑÑ Ð½Ð¸ÑÑÐ¸Ð´Ð¾Ð² Ð¼ÐµÑÐ°Ð»Ð»Ð¾Ð² ÑÑÐµÑÑÐµÐ¹ Ð³ÑÑÐ¿Ð¿Ñ Ð¾Ð±Ð»Ð°Ð´Ð°ÑÑ Ð¾ÑÐ»Ð¸ÑÐ¸ÑÐµÐ»ÑÐ½ÑÐ¼ ÑÐ²Ð¾Ð¹ÑÑÐ²Ð¾Ð¼ Ð² ÑÑÐ°Ð²Ð½ÐµÐ½Ð¸Ð¸ Ñ Ð´ÑÑÐ³Ð¸Ð¼Ð¸ Ð¿Ð¾Ð»ÑÐ¿ÑÐ¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ°Ð¼Ð¸: Ð²ÑÑÐ¾ÐºÐ¸Ðµ Ð¿ÑÐ¾Ð±Ð¸Ð²Ð½ÑÐµ Ð¿Ð¾Ð»Ñ Ð¸ ÑÐ°Ð´Ð¸Ð°ÑÐ¸Ð¾Ð½Ð½Ð°Ñ Ð¸ ÑÐµÑÐ¼Ð¸ÑÐµÑÐºÐ°Ñ ÑÑÐ¾Ð¹ÐºÐ¾ÑÑÑ, ÑÑÐ¾ Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÐµÑ Ð¸ÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°ÑÑ Ð¸Ñ Ð² Ð¼Ð¾ÑÐ½Ð¾Ð¹ Ð¡ÐÐ§ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¸ÐºÐµ. ÐÐ°Ð¸Ð±Ð¾Ð»ÑÑÐ¸Ð¹ Ð¸Ð½ÑÐµÑÐµÑ Ð¿ÑÐµÐ´ÑÑÐ°Ð²Ð»ÑÑÑ Ð½Ð¸ÑÑÐ¸Ð´ Ð³Ð°Ð»Ð»Ð¸Ñ Ð¸ Ð½Ð¸ÑÑÐ¸Ð´ Ð°Ð»ÑÐ¼Ð¸Ð½Ð¸Ñ-Ð³Ð°Ð»Ð»Ð¸Ñ. ÐÐ»ÑÑÐµÐ²Ð¾Ð¹ ÑÐµÐ»ÑÑ ÑÐ°Ð±Ð¾ÑÑ ÑÐ²Ð»ÑÐ»Ð¾ÑÑ Ð¸Ð·ÑÑÐµÐ½Ð¸Ðµ Ð²Ð»Ð¸ÑÐ½Ð¸Ñ Ð½Ð°ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐ°Ð´Ð¸Ð¹ ÑÐ¾ÑÑÐ° Ð½Ð° ÑÐ²Ð¾Ð¹ÑÑÐ²Ð° Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ GaN/AlGaN Ñ Ð´Ð²ÑÐ¼ÐµÑÐ½ÑÐ¼ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½ÑÐ¼ Ð³Ð°Ð·Ð¾Ð¼ Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÐ¼ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð¼Ð¾Ð»ÐµÐºÑÐ»ÑÑÐ½Ð¾-Ð»ÑÑÐµÐ²Ð¾Ð¹ ÑÐ¿Ð¸ÑÐ°ÐºÑÐ¸Ð¸. Ð Ð¿ÑÐ¾ÑÐµÑÑÐµ ÑÐ°Ð±Ð¾ÑÑ Ð±ÑÐ»Ð¸ ÑÐµÑÐµÐ½Ñ ÑÐ»ÐµÐ´ÑÑÑÐ¸Ðµ Ð·Ð°Ð´Ð°ÑÐ¸: ÐÐ¾Ð»ÑÑÐµÐ½Ð¸Ðµ Ð¿ÑÐ¸ ÑÐ°Ð·Ð½ÑÑ Ð½Ð°ÑÐ°Ð»ÑÐ½ÑÑ ÑÑÐ»Ð¾Ð²Ð¸ÑÑ ÑÐ¾ÑÑÐ° ÑÑÑÑÐºÑÑÑ AlN/AlGaN/GaN/AlGaN. ÐÑÐ¾Ð²ÐµÐ´ÐµÐ½Ð¸Ðµ ÐºÐ¾Ð½ÑÑÐ¾Ð»Ñ Ð² Ð¿ÑÐ¾ÑÐµÑÑÐµ ÑÐ¾ÑÑÐ° Ð³ÐµÑÐµÑÐ¾ÑÑÑÑÐºÑÑÑ Ð¼ÐµÑÐ¾Ð´Ð¾Ð¼ Ð»Ð°Ð·ÐµÑÐ½Ð¾Ð¹ Ð¸Ð½ÑÐµÑÑÐµÑÐ¾Ð¼ÐµÑÑÐ¸Ð¸ Ð¸ Ð´Ð¸ÑÑÐ°ÐºÑÐ¸Ð¸ Ð±ÑÑÑÑÑÑ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð¾Ð². ÐÐ·Ð¼ÐµÑÐµÐ½Ð¸Ðµ ÑÐ²Ð¾Ð¹ÑÑÐ² Ð¸ ÑÐ¸Ð·Ð¸ÑÐµÑÐºÐ¸Ñ Ð¿Ð°ÑÐ°Ð¼ÐµÑÑÐ¾Ð² Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ ÑÑÑÑÐºÑÑÑ. ÐÐ±ÑÐ°Ð±Ð¾ÑÐºÐ° Ð¿Ð¾Ð»ÑÑÐµÐ½Ð½ÑÑ Ð´Ð°Ð½Ð½ÑÑ. ÐÑÐ¿Ð¾Ð»ÑÐ·Ð¾Ð²Ð°Ð½Ð¸Ðµ ÑÐ°Ð·Ð»Ð¸ÑÐ½ÑÑ Ð¼ÐµÑÐ¾Ð´Ð¸Ðº Ð½Ð° Ð¿ÑÐ¸ ÑÐ¾ÑÑÐµ Ð±ÑÑÐµÑÐ½ÑÑ ÑÐ»Ð¾ÐµÐ² (ÑÑÑÑÐ°ÐºÑÐ°Ð½ÑÐ° Ð³Ð°Ð»Ð»Ð¸Ñ, Ð¾Ð¿ÑÐ¸Ð¼Ð¸Ð·Ð¸ÑÐ¾Ð²Ð°Ð½Ð½Ð¾Ð³Ð¾ Ð¿Ð¾ÑÐ¾ÐºÐ° Ð°Ð¼Ð¼Ð¸Ð°ÐºÐ° Ð¸Ð»Ð¸ Ð¿Ð¾Ð²ÑÑÐµÐ½Ð¸Ðµ ÑÐµÐ¼Ð¿ÐµÑÐ°ÑÑÑÑ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ¸) Ð¿Ð¾Ð·Ð²Ð¾Ð»ÑÐµÑ Ð·Ð½Ð°ÑÐ¸ÑÐµÐ»ÑÐ½Ð¾ ÑÐ»ÑÑÑÐ¸ÑÑ Ð¼Ð¾ÑÑÐ¾Ð»Ð¾Ð³Ð¸Ñ Ð¿Ð¾Ð²ÐµÑÑÐ½Ð¾ÑÑÐ¸ Ð¿ÑÐ¸ ÑÐ¾ÑÑÐµ ÐºÑÐ¸ÑÑÐ°Ð»Ð»Ð° Ð¸ ÑÐ²ÐµÐ»Ð¸ÑÐ¸ÑÑ Ð¿Ð¾Ð´Ð²Ð¸Ð¶Ð½Ð¾ÑÑÑ Ð½Ð¾ÑÐ¸ÑÐµÐ»ÐµÐ¹ Ð² Ð´Ð²ÑÐ¼ÐµÑÐ½Ð¾Ð¼ ÑÐ»ÐµÐºÑÑÐ¾Ð½Ð½Ð¾Ð¼ Ð³Ð°Ð·Ðµ.
description: The structures of group-III nitrides have a distinctive property in comparison with other semiconductors: high breakdown fields and radiation and thermal resistance, which allows them to be used in high-power microwave electronics. The most interesting are gallium nitride and aluminium-gallium nitride. The key objective of the work was to study the effect of the initial stages of growth on the properties of GaN/AlGaN heterostructures with a two-dimensional electron gas obtained by molecular beam epitaxy. In the process of work, the following tasks were solved: Growing of AlN / AlGaN / GaN / AlGaN heterostructures under various initial growth conditions. Monitoring during growth by the following methods: laser interferometry and RHEED. Measurement of the physical parameters of the final structures. Data analysisThe use of various approaches at the initial stage of the growth of buffer layers (Ga-surfactant or optimized ammonia flow and substrate temperature) can significantly increase the carrier mobility in a two-dimensional electron gas.