Title: Electronic thin-film reliability /
Authors: Tu, K. N. 1937-
Publisher: Cambridge University Press,
Year: 2011
Subjects: Thin films Textbooks.; Reliability (Engineering) Textbooks.
Abstract: "Thin films are widely used in the electronic device industry. As the trend for miniaturization of electronic devices moves into the nanoscale domain, the reliability of thin films becomes an increasing concern. Building on the author's previous book, Electronic Thin Film Science by Tu, Mayer, and Feldman, and based on a graduate course at UCLA given by the author, this new book focuses on reliability science and the processing of thin films. Early chapters address fundamental topics in thin-film processes and reliability, including deposition, surface energy, and atomic diffusion, before moving on to systematically explain irreversible processes in interconnect and packaging technologies. Describing electromigration, thermomigration, and stress-migration, with a closing chapter dedicated to failure analysis, the reader will come away with a complete theoretical and practical understanding of electronic thin-film reliability. Kept mathematically simple, with real-world examples, this book is ideal for graduate students, researchers, and practitioners"--
Contents: Thin-film applications to microelectronic technology -- Thin-film deposition -- Surface energies -- Atomic diffusion in solids -- Applications of the diffusion equation -- Elastic stress and strain in thin films -- Surface kinetic processes on thin films -- Interdiffusion and reaction in thin films -- Grain-boundary diffusion -- Irreversible processes in interconnect and packaging technology -- Electromigration in metals -- Electromigration-induced failure in Al and Cu interconnects -- Thermomigration -- Stress migration in thin films -- Reliability science and analysis -- Appendices: A. A brief review of thermodynamic functions; B. Defect concentration in solids; C. Derivation of Huntington's electron wind force; D. Elastic constants tables and conversions; E. Terrace size distribution in Si MBE; F. Interdiffusion coefficient; G. Tables of physical properties.