Title: The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon /
Authors: Li, Sheng S., 1938-; United States.; National Science Foundation (U.S.)
Publisher: U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off.,
Year: 1979
Subjects: Holes (Electron deficiencies); Semiconductor doping.; Silicon Defects.