bluuebunny/crossref_metadata_2025_split huggingface dataset:
Torsades de pointes associated with remdesivir treatment for COVID-19 pneumonia
Authors: Fung Jollee ST , Levitan Mark , Landry Sarah , McIsaac Sarah 
Published: October 2022

Background: Prolonged QT interval (QTc) can be a serious adverse event from SARS-CoV-2 infection and associated treatment, including remdesivir. Methods: We present a case of a 55-year-old woman with COVID-19 pneumonia who was treated with remdesivir. The QTc on admission was 483 ms. After three doses of remdesivir, she had an episode of non-sustained ventricular tachycardia. Repeat QTc was significantly prolonged at 609 ms. She experienced a polymorphic ventricular tachycardic cardiac arrest the next morning, thought to be secondary to torsades de pointes. Results: Transthoracic echocardiogram showed normal biventricular function. Electrolytes were within normal limits. In the absence of other QTc-prolonging medications, remdesivir was thought to be inciting agent. Following discontinuation of remdesivir, the patient's QTc returned to baseline. Conclusions: There is a risk for cardiac events from QTc prolongation effects of SARS-CoV-2 infection and associated treatment. We recommend pharmacological profile review and cardiac monitoring for patients receiving remdesivir.
Electronics Failure Analysis Demonstrations using a Quantum Diamond Microscope
Authors: Kehayias P. , Levine E. V. , Rodarte A. , Walraven J. , Mounce A. M. 
Published: October 2022

Abstract
One approach for finding faults in integrated circuits (ICs) is magnetic imaging, where we map the magnetic fields emitted by internal currents in the device and use this knowledge to infer the current paths and fault locations. This gives us access to information about the IC internal properties without needing voltage probes, as the magnetic fields are unimpeded by opaque insulating and conducting layers. Magnetic imaging benefits from optimizing the spatial resolution and minimizing the standoff distance between the magnetic sensor and the circuit, motivating new experimental approaches that excel at these attributes. In this work, we apply the quantum diamond microscope (QDM) instrument to example failure analysis situations, building on our previous work using the QDM to interrogate the internal states of commercial ICs to achieve micrometer-scale spatial resolution and standoff distance.
Machine Learning Reinforced Acoustic Signal Analysis for Enhancing Non-Destructive Defect Localization and Reliable Identification
Authors: Brand Sebastian , Kögel Michael , Altmann Frank , Hollerith Christian , Gounet Pascal 
Published: October 2022

Abstract
The paper presents the approach of enhancing time-domain signal analysis using machine learning techniques for analyzing acoustic echo signals and the subsequent derivation of condition-related class assignments for failure analysis. The examples provided here include two types of flip-chips with defects intentionally induced by thermal stressing. Besides investigating the general applicability and the benefit of the approach the current study also investigated the applicability of different deep learning model-architectures and compared their performances, accuracies, and robustness with respect to external impacts such as noise, jitter or physical defocusing. For independent verification selected defects which have either been identified by an experienced operator or the ML algorithm or both, have been further analyzed and validated by FIB/SEM cross sectional analysis.
Automated Labeling Infrastructure for Failure Analysis
Authors: Mathá Natalia , Schekotihin Konstantin , Bergner Matthias , Cobârzan Doriana , Hudelist Marco 
Published: October 2022

Abstract
The development of intelligent assistants helping Failure Analysis (FA) engineers in their daily work is essential to any digitalization strategy. In particular, these systems must solve various computer vision or natural language processing problems to select the most critical information from heterogeneous data, like images or texts, and present it to the users. Modern artificial intelligence (AI) techniques approach these tasks with machine learning (ML) methods. The latter, however, require large volumes of training data to create models to solve the required problems. In most cases, enterprise clouds store vast volumes of data captured while applying various FA methods. Nevertheless, this data is useless for ML training algorithms since it is stored in forms that can only be interpreted by highly-trained specialists. In this paper, we present an approach to embedding an annotation process in the everyday routines of FA engineers. Its services can easily be embedded in existing software solutions to (i) capture and store the semantics of each data piece in machine-readable form, as well as (ii) provide predictions of ML models trained on previously annotated data to simplify the annotation task. Preliminary experiments of the built prototype show that the extension of an image editor used by FA engineers with the services provided by the infrastructure can significantly simplify and speed up the annotation process.
Cooling System for High Performance Device Analysis
Authors: Nonaka Hirotaka , Terada Hirotoshi , Shimase Akira , Suzuki Junya , Nakamura Akihiro 
Published: October 2022

Abstract
Certain device failures are especially difficult to analyze since they can only be reproduced under high speed and high power conditions, while also requiring the removal of standard heat dissipating packaging to get visual access to the chip. In addition to the challenge of heat generation density of devices increasing year by year, small hot spots in actual usage generate heat far in excess of the average, and heat dissipation performance needs to be more efficient and highly uniform. In addition, it is desirable to implement a cooling system that does not overly restrict the number and types of lenses that can be used, such as high and low magnification air gap lenses as well as a solid-immersion lens, which has been one of the challenges of existing systems. This paper reports on the development of a cooling system to address these challenges and to enable failure analysis on a device running at 200 W.
A Quick and Intuitive Approach of Handeling In-Amp Failures Towards Lower Cycle Time and Improving Failure Mechanism Confidence and Quality
Authors: Cajucom Khristopherson , Evangelista Arnulfo , Adrias Isovelle , Ordiales Ryan , Arnaiz Godofredo 
Published: October 2022

Abstract
The instrumentation amplifier products are high-volume runner products hence, also a high volume of returns are encountered at Failure Analysis Department. To solve each return would need a highly structured technique that requires extensive plot of results for the determination of proper failure mechanism. A perceptive approach that the Failure Analyst deal with in solving the different issues encountered is the compilation of failure data using commonality study of returns with summary that can easily be seen on a Measles chart. A compilation of complete list of historical analysis with circuit block layout designation, test methods, signature cases, microprobing and circuit analysis collaboration results are consolidated in one file to help guide the Analyst in determining the exact cause of failure, thus improving quality and turnaround time that translates to cycle time improvement of 56% CT days reduction hence creating value to the customer.
First Approach of Fault Isolation using Green Laser on 4H-SiC Power Device
Authors: Barbarino Pierpaolo , Anastasi Giuseppe , Astuto Massimiliano , Mello Domenico 
Published: October 2022

Abstract
In this work we have investigated the results obtained using fault isolation techniques such as EMMI, OBIRCH and OBIC on a Wide band gap power device and in particular a 4H-SiC. We used YLF laser and Green Laser and showed the differences in the resulting hot spots. In the selected point, FIB cross sectioning and EDS analysis was performed. Once that the defect was shown, the differences the fault isolation results were discussed.
Electrical Fault Isolation for Functional and Logic Hard Failures using Laser Voltage Imaging
Authors: Sun Kan , Karuppannan Silambarasan , Chong Soon Woei , You Guofeng , Lee Wilson C. H. , Endrinal Lesly 
Published: October 2022

Abstract
Hard functional and logic failures which are insensitive to temperature, voltage, or frequency have become increasingly difficult to debug in advanced technology nodes, especially when Photon Emission (PEM) analysis could not provide any leads and Dynamic Laser Stimulation (DLS) could not be used due to the nature of the failure (no pass/fail margin). Laser Voltage Imaging (LVI), which is an extension of the Laser Voltage Probing (LVP) technique, provides a visual map of active components that are toggling at a certain frequency. This technique is widely employed in scan chain debug due to its simplicity, efficiency, and accuracy. However, most of LVI applications in literature reviews only involve scan chain fault isolation. This paper will present alternative applications for LVI, apart from scan chain debug. One specific application is the debug of a broken signal path by sending a periodic signal as a stimulus to a GPIO pad and tracing the LVI signal through the path by frequency mapping. In this paper, the concept and methodology behind this fault isolation approach will be discussed in full detail. Furthermore, three case studies of different types of hard failures with different applications of LVI will also be presented: an IO functional failure, an ATPG (Automatic test pattern generation) SAF (Stuck At Fault) failure and a BSDL(Boundary scan description language) input interconnect failure, to illustrate how LVI could be deployed in fault isolation for those functional and logic hard failures.
Investigation of Thermal Laser Stimulation (TLS) Effects on 7nm FinFET Transistor Parameters
Authors: Oarethu Johns , Song Zhigang , McGinnis Pat , Wu Stephen , Tran Phong , Tenney Mike , Oldrey Richard 
Published: October 2022

Abstract
Thermal Laser Stimulation (TLS) is employed extensively in semiconductor device fault isolation techniques such as TIVA (Thermal Induced Voltage Alteration), OBIRCH (Optical Beam Induced Resistance Change), SDL (Soft Defect localization), CPA (Critical Parameter Analysis), LADA (Laser Assisted Device Alteration), and LVI (Laser Voltage Imaging), etc. To investigate the TLS effects on 7nm FinFET transistor parameters, several transistors of 7nm FinFET inline ET (Electrical Test) macros were tested while employing TLS of various energy values. The test was done in linear mode so that the joule heating caused by the electrical current would be minimized. The experimental results showed that both NFETs and PFETs experienced increased Ioff (Off current) and Sub_Vt_lin_slope (Subthreshold slope), and decreased Ion (On current) and Vt_lin (Threshold voltage) due to elevated temperature of the transistor from TLS. Higher laser power caused greater effects on transistor parameters. The temperature increase on a transistor by TLS depends on the amount of laser energy transferred to, absorbed by, and dispersed by the transistor area. Factors such as the efficient coupling of the SIL (Solid Immersion Lens) with the Silicon backside surface, the transistor size, and the local layout around the transistor will greatly affect the amount of heat delivered to a particular transistor, even while using the same laser power. Thus, setting the laser power for fault isolation with TLS should consider these factors. Our experimental results also showed that the alteration of transistor parameters under TLS was not permanent if the laser power was carefully selected. It should be noticed that during dynamic fault isolation, a transistor may be switching between off, linear mode, and/or saturation mode. The temperature increase on the transistor under TLS may be higher than anticipated due to joule heating if the transistor operation is not confined to the linear region only. Experiments on transistors operating in saturation mode under TLS can be the subject of future work. The results obtained from these experiments can still establish guidelines for laser power settings to be used in the related fault isolation techniques for devices manufactured at the 7nm node so as to achieve non-destructive fault isolation.
Investigation of the Growth Mechanics of Laser Assisted Copper Deposition for Circuit Edit Applications
Authors: DiBattista Michael , Furlong Jordan , Levesque Matthew , Harper Thomas , Ferri Christopher G.L. , Silverman Scott , Mulholland Matthew M. , Bakken Nathan 
Published: October 2022

Abstract
Reproducible laser-assisted metal deposition with copper hexafluoroacetylacetonate trimethylvinylsilane Cu(hfac) (TMVS) has been demonstrated on a range of relevant semiconductor insulating material surfaces including silicon dioxide (SiO2), crystalline silicon (c-Si), and organic package material such as polyimide and printed circuit board (PCB) FR- 4. A key to reliable and chemically efficient growth is a novel copper chemistry delivery methodology using direct precursor pulsing. The laser power conditions for deposition are strongly correlated to the substrate material, with increased power for the more thermally conductive samples (0.8 – 1.0 W) and significantly less for packaging materials (50 mW). The laser-assisted copper growth results and material properties are comparable to the published literature. Examples of circuit modifications using this methodology demonstrate its valuable role in the future of circuit edit.
Electrical Characterization of Circuit Edit Workflow using High and Low Energy FIB
Authors: Haimson Or , Goldman Roy , Wong Michael 
Published: October 2022

Abstract
The workflow of backside IC circuit edits using low and high ion-beam energy is investigated. The imaging capabilities using a high keV beam are superior to that of lower beam energy, even when using low beam currents, on typical ion beam microscopes. In this work, we will test the parametric shift of IC components following the use of 5 keV Gallium Focused Ion Beam (FIB) to expose Shallow Trench Isolation (STI), depositing a protective dielectric layer, and then switching to 30 keV FIB to perform device alteration. Electrical testing results show that the devices exhibit only a minor parametric shift. We present a case study, performing circuit edit on a 7 nm process node using the proposed workflow. Finally, we discuss the advantages of the proposed workflow.
Large Field of View and Artifact-Free Plan View TEM Specimen Preparation by Post-FIB Ar Milling
Authors: Bonifacio C.S. , Li R. , Nowakowski P. , Ray M.L. , Fischione P.E. 
Published: October 2022

Abstract
Semiconductor devices are decreasing in dimensions and currently comprise stacks of ultrathin layers as in a spin-transfer torque magnetoresistive random-access memory (STTMRAM) device. For successful characterization by transmission electron microscopy (TEM) for failure analysis and device development, an accurate and controllable thinning of TEM specimens for is desirable. In this work, we combine plan view Ga focused ion beam (FIB) and post-FIB Ar milling preparation to prepare TEM specimens from a STT-MRAM device. Post-FIB Ar milling technique as a final polishing step of plan view TEM specimens was shown to prevent exposure of the tunnel barrier layer that can be damaged by the Ga FIB beam. We discuss the plan view FIB preparation, post-FIB Ar milling step and image analysis of the TEM images.
New Approach in Physical Failure Analysis Based on 3D Reconstruction
Authors: Mello Domenico , Sciuto Giuseppe , Astuto Massimiliano , Santangelo M. Francesca , Stegmann Heiko , Cognigni Flavio , Rossi Marco 
Published: October 2022

Abstract
In this work we present a new approach in physical failure analysis. Fault isolation can be done using volume diagnosis techniques. But when studying the identified defect sites by Focused Ion Beam (FIB) cross-sectioning, correct interpretation of the cross-sectional views strongly relies on choosing an appropriate cutting strategy. However, volume diagnosis techniques do not provide any information on which cutting directions and settings to choose to avoid misinterpretation of the spatial evolution of the defects. The proposed approach is to acquire FIB-SEM tomographic datasets at the defect sites to unequivocally characterize the defects in three-dimensional visualizations, independent of particular cross-sectioning strategies. In this specific case we have applied the methodology at a microcontroller for automotive applications on which a couple of floating VIAS were found. Thanks to the complete information obtained with the tomography, the defect could be assigned to a specific class of etching tools, and the root cause thus be solved.
Automated TEM Lamella Preparation using Remote CAD to SEM Alignment
Authors: Shim Hyun Woo , Lee Taehun , Kwon Jonghan 
Published: October 2022

Abstract
Automated TEM lamella preparation using the remote CAD to SEM image alignment has been demonstrated for high volume failure analysis. The proposed method not only provides a secure means of using CAD design data during the lamella prep process, but offers an improved flexibility compared to conventional methods of processing CAD design file in a tool environment. The experiment showed that the new method is 3.1 times higher in throughput and requires 74 times less manhours, compared to manual process.
Defect Localization and Analysis of Compound Semiconductors using ECCI, CBED, and STEM-in-SEM for an All-In-Situ Workflow Using a FIB/SEM Microscope
Authors: Stokes Adam , Strakoš Libor , Landin Trevan 
Published: October 2022

Abstract
Complex failure analysis often requires the use of multiple characterization instruments. For example, a defect or failure may be localized using one tool, whereas the subsequent marking, precision targeting, and high-resolution analysis may require completely different instruments. As a result, the analysis workflows require sample and operator coordination between instruments and engineers, which leads to lower throughput and success rates. This paper describes a complete in-situ workflow for comprehensive failure analysis processes on a compound semiconductor using a state-of-the-art FIB/SEM system, incorporating electron channeling contrast imaging (ECCI) and a STEM-in-SEM detector used in unison with an insertable detector positioned underneath the sample to capture transmitted electron condensed beam electron diffraction (CBED) micrographs.
Building a Better Lab Space for High-Tech Imaging/Processing Tools
Authors: Herschbein Steven B. , Hartfield Cheryl , Wong Michael , Kevek Joshua W. 
Published: October 2022

Abstract
The design and construction of a well-executed laboratory space to house high resolution analytical imaging and processing tools can often be more complex and expensive than anticipated. Unlike their manufacturing counterparts, lab tools as a class have fewer built-in countermeasures to fend off operational degradation caused by external factors. A poorly optimized facility can result in significant underperformance of installed systems, thereby wasting the investment and jeopardizing the mission. Unfortunately, very few assigned laboratory spaces are ‘naturally’ perfect for the installation of new analytical equipment at the outset. It typically takes considerable work to engineer most locations so that the tools function as they should and live up to expectations. The magnitude of the challenge and its true cost and lead time often come as a huge surprise to failure analysis engineers tasked with wearing multiple ‘hats’ while navigating the capital approval process. Being caught off guard in this manner often results in considerable time delay, as well as over-budget or sub-par outcomes. In this paper we offer suggestions on how to revamp the typical capital cycle process for specifying, buying, and installing future laboratory tools. We furthermore aim to produce an abbreviated reference guide for tool owners on facility requirements needed to ensure optimal analytical system performance.
High-Resolution Conductivity Mapping with STEM EBIC
Authors: Hubbard William A , Chan Ho Leung , Regan B. C. 
Published: October 2022

Abstract
Modern electronic systems rely on components with nanometer-scale feature sizes in which failure can be initiated by atomic-scale electronic defects. These defects can precipitate dramatic structural changes at much larger length scales, entirely obscuring the origin of such an event. The transmission electron microscope (TEM) is among the few imaging systems for which atomic-resolution imaging is easily accessible, making it a workhorse tool for performing failure analysis on nanoscale systems. When equipped with spectroscopic attachments TEM excels at determining a sample’s structure and composition, but the physical manifestation of defects can often be extremely subtle compared to their effect on electronic structure. Scanning TEM electron beam-induced current (STEM EBIC) imaging generates contrast directly related to electronic structure as a complement the physical information provided by standard TEM techniques. Recent STEM EBIC advances have enabled access to a variety of new types of electronic and thermal contrast at high resolution, including conductivity mapping. Here we discuss the STEM EBIC conductivity contrast mechanism and demonstrate its ability to map electronic transport in both failed and pristine devices.
TEMautoReporting—Automation of Elemental Analysis and TEM Reporting with Graphical User Interface
Authors: Liao Yougui , Kari Tom , Sorensen Curt , Goodwin Rob , Williams Scott , Wilkin Robert , Gatzemeier Scott 
Published: October 2022

Abstract
Manual TEM analysis with elemental analysis through EELS or EDS has long been a major throughput bottleneck in physical failure analysis. The novel non-commercial technique presented in this paper is a historical and industry-first milestone of developments of combining elemental analysis and raw TEM data to automate data reporting. The approach uses a layered architecture in which “specific skills” are created on top of so-called "generic skills" (i.e., generic robot behaviors like cursor motions). With this skill-oriented robot programming approach, time and cost-efficient data production has been established with high accuracy, speed, and comprehension. The speed and productivity of images and maps, obtained from both collected raw data and jobs in the queue, cannot be achieved by manual operation, and the accuracy and comprehension cannot be practically obtained routinely on each job by human interaction because it is too time consuming.
A Methodical Failure Analysis Approach Using Thermomechanical Analysis in Reducing Recurring Failures on iButton Modules
Authors: Austral John Albert , Cruz Em Julius Dela , Garcia Ramon , Valiente Flordeliza 
Published: October 2022

Abstract
The iButton temperature logger is a robust and independent system that measures temperature and records the temperature data in a non-volatile memory section. Although iButtons are a relatively mature product, failures due to Battery Depletion and Battery-On-Reset (BOR) occur. Despite the implementation of major corrective actions to improve product reliability and robustness, customer failures due to Depleted Battery and BOR have not been fully eliminated. One recent quality issue involved a high failure rate on one iButton variant at the customer’s quality control before calibration, which prompted a thorough failure analysis to nail down the real cause of failure. This paper presents methodical failure analysis (FA) steps and processes that led to the identification of failure mechanisms. As a result, the real issue was detected leading to a more accurate corrective action and device reliability.