bluuebunny/crossref_metadata_2025_split huggingface dataset:
Multistate Markov model application for blood pressure transition among the Chinese elderly population: a quantitative longitudinal study
Authors: Zheng Xujuan , Xiong Juan , Zhang Yiqin , Xu Liping , Zhou Lina , Zhao Bin , Wang Yuxin 
Published: July 2022

ObjectiveTo explore the transitions of different blood pressure states based on a multistate Markov model among the Chinese elderly population.SettingA community health centre in Xiamen, China.Participants1833 elderly Chinese people.MethodsA multistate Markov model was built based on 5001 blood pressure measurements from 2015 to 2020. Research was conducted to explore the process of hypertension progression, providing information on the transition probability, HR and the mean sojourn time in three blood pressure states, namely normal state, elevated state and hypertensive state.ResultsProbabilities of moving from the normal state to the hypertensive state in the first year were 16.97% (female) and 21.73% (male); they increased dramatically to 47.31% (female) and 51.70% (male) within a 3-year follow-up period. The sojourn time in the normal state was 1.5±0.08 years. Elderly women in the normal state had a 16.97%, 33.30% and 47.31% chance of progressing to hypertension within 1, 2 and 3 years, respectively. The corresponding probabilities for elderly men were 21.73%, 38.56% and 51.70%, respectively. For elderly women starting in the elevated state, the probabilities of developing hypertension were 25.07%, 43.03% and 56.32% in the next 1, 2 and 3 years, respectively; while the corresponding changes for elderly men were 20.96%, 37.65% and 50.86%. Increasing age, body mass index (BMI) and glucose were associated with the probability of developing hypertension from the normal state or elevated state.ConclusionsPreventive actions against progression to hypertension should be conducted at an early stage. More awareness should be paid to elderly women with elevated state and elderly men with normal state. Increasing age, BMI and glucose were critical risk factors for developing hypertension. The derived transition probabilities and sojourn time can serve as a significant reference for making targeted interventions for hypertension progression among the Chinese elderly population.
Condom use among women of reproductive age (18–49 years) in Puerto Rico during the 2016 Zika virus outbreak: secondary analysis of data from a cross-sectional, population-based, cell-phone survey
Authors: Chang Karen T , Snead Margaret Christine , Serrano Rodriguez Ruby A , Bish Connie , Shapiro-Mendoza Carrie K , Ellington Sascha R 
Published: July 2022

ObjectivesZika virus (ZIKV) can be sexually transmitted, and ZIKV infection during pregnancy can cause birth defects. Contraception is a medical countermeasure to reduce unintended pregnancy and ZIKV-associated birth defects. We estimated the prevalence of condom use and associated factors among women at risk for unintended pregnancy in Puerto Rico during the 2016 ZIKV outbreak.DesignSecondary analysis of a cross-sectional, population-based, cell-phone survey.Setting and participantsWomen, 18–49 years, living in Puerto Rico during July–November 2016. We limited our analytical sample (n=1840) to women at risk for unintended pregnancy, defined as those who were sexually active with a man in the last 3 months and did not report menopause, hysterectomy, current pregnancy or desiring pregnancy.Outcome measuresWe estimated the weighted prevalence of any condom use among women at risk for unintended pregnancy. We calculated crude and adjusted prevalence ratios (aPRs) to examine the association between condom use and ZIKV-related factors, stratified by use of more effective versus less effective or no contraception.ResultsOverall, 32.7% (95% CI: 30.2% to 35.1%) of women reported any condom use in the last 3 months. Among women using more effective contraception, condom use was higher for women who received ZIKV counselling (aPR: 1.61, 95% CI: 1.15 to 2.25) and those worried about having a child with a ZIKV-associated birth defect (aPR: 1.47, 95% CI: 1.03 to 2.10). Among women using less effective or no contraception, condom use was associated with being worried (aPR: 1.20, 95% CI: 1.01 to 1.43) compared with those not worried about ZIKV infection or with a previous known infection.ConclusionsDuring the 2016 ZIKV outbreak, one in three women at risk for unintended pregnancy reported any condom use. Counselling to promote consistent and correct condom use may address concerns regarding ZIKV among women of reproductive age, which may differ by use of effective contraception.
Percutaneous alcohol embolization and vertebroplasty of a T2 aggressive vertebral hemangioma with prior embolization of dangerous arterial anastomoses
Authors: Bonnet Baptiste , Shotar Eimad , Premat Kevin , Cormier Evelyne , Beth Adrien , Trebern Hugo , Mahtout Jugurtha , Feydy Antoine , Clarençon Frédéric 
Published: July 2022

Aggressive vertebral hemangiomas usually exhibit extraosseous expansion that can result in spinal cord or radicular compression.1 In symptomatic cases, treatment by alcohol embolization and percutaneous vertebroplasty has been reported as feasible, safe, and effective with long-term benefits on neurological symptoms.2Safety rules before vertebral alcohol embolization include preoperative spinal cord vascularization mapping and opacification through bone needles to assess the absence of dangerous intratumoral anastomoses.In video 1 we present a case of a symptomatic T2 aggressive vertebral hemangioma with dangerous anastomoses between the lesion and both supreme intercostal arteries (SIAs). Embolization by the arterial route of both SIAs was performed, which required good anatomic knowledge of the spinal cord vascularization at the cervicothoracic junction3 4 as a cervical radiculomedullary artery arose from the left costocervical trunk which also fed the left SIA. After occlusion of all dangerous arterial anastomoses, we were able to successfully perform T2 alcohol embolization and percutaneous vertebroplasty.Video 1Case presentation
Increased risk of incident knee osteoarthritis in those with greater work-related physical activity
Authors: Lo Grace H , Richard Michael J , McAlindon Timothy E , Park Chantel , Strayhorn Michael T , Harkey Matthew S , Price Lori Lyn , Eaton Charles B , Driban Jeffrey B 
Published: July 2022

ObjectiveOccupations involving greater physical activity may increase risk for knee osteoarthritis (OA). Existing studies have not evaluated work-related physical activity before OA onset. Hence, we aimed to evaluate the association between work-related physical activity and knee OA incidence.MethodsWe performed a person-based longitudinal study using Osteoarthritis Initiative (OAI) data among people who volunteered or worked for pay without baseline radiographic knee OA or knee pain. Bilateral knee radiographs were obtained at baseline and annual follow-ups. We defined radiographic OA as Kellgren-Lawrence grade ≥2. Questions from the Physical Activity Scale for the Elderly at baseline and annual OAI visits provided information about work-related physical activity level and hours. We performed logistic regression with work-related physical activity level (mainly sitting,standing and some walking,walking while handling some materials) and hours as predictors. The outcome was incident person-based radiographic OA within the ensuing 12 months, over 48 months.ResultsAmong 951 participants (2819 observations), higher work-related physical activity levels had greater adjusted ORs for incident radiographic OA (people with jobs withstanding and some walking: 1.11 (0.60–2.08), andwalking while handling some materials: 1.90 (1.03–3.52), when compared with those withmainly sitting work-related activity). There was no association between number of hours worked and incident radiographic OA.ConclusionsPeople performing work that require walking while handling some materials have greater odds of incident knee OA than those with jobs mostly involving sitting. Strategies are needed to mitigate risk factors predisposing them to radiographic OA.
(Invited) Production and Functionalization of Carbon Nanotubes for Electrochemical Energy Storage Devices
Authors: Noda Suguru 
Published: July 2022

Self-supporting, sponge-like paper of carbon nanotubes (CNTs) can be a new platform for high energy/power density batteries. Presently, battery electrodes are built on metallic foils having only two faces and large mass with the aid of polymeric binders and conductive fillers. CNT paper can replace all these components. Furthermore, it captures nanomaterials at high loading, activates insulative materials, and moderates volumetric change of active materials.
We have developed semi-continuous fluidized bed chemical vapor deposition method [1], which yields submillimeter-long few-wall CNTs with carbon purity >99 wt% and metal impurity <0.1 wt% [2]. By capturing capacitive particles (99 wt%) with CNTs (1 wt%), a lithium ion full cell with graphite-CNT anode and LiCoO2-CNT cathode is demonstrated (Figure 1b) [3]. This platform is also effective to create electrodes of the emerging active materials such as Si anode [4] and S cathode [5] with practically high gravimetric, areal, and volumetric loadings, and realized Li
x
Si-S and Li-Li2S
x
full cells [6,7]. In addition, by combining with the insulative sponge of boron nitride nanotubes (BNNTs), the graphite-CNT|BNNT| LiCoO2-CNT full cell with high thermal stability was developed [8].
[1] D.Y. Kim, et al., Carbon 49, 1972 (2011).
[2] Z. Chen, et al., Carbon 80, 339 (2014).
[3] K. Hasegawa and S. Noda, J. Power Sources 321, 155 (2016).
[4] T. Kowase, et al., J. Power Sources 363, 450 (2017).
[5] K. Hori, et al., J. Phys. Chem. C 123, 3951 (2019).
[6] K. Hori, et al., Carbon 161, 612-621 (2020).
[7] Y. Yoshie, et al., Carbon 182, 32-41 (2021).
[8] K. Kaneko, et al., Carbon 167, 596-600 (2020).
Figure 1. (a) Semi-continuous production of submillimeter-long few-wall CNTs by fluidized bed [1]. (b) Lithium ion full cell made of graphite-CNT anode and LiCoO2-CNT cathode [3].

Figure 1
(Invited) Deterministic Transfer of Optical-Quality Carbon Nanotubes for Atomically Defined Technology
Authors: Otsuka Keigo , Fang Nan , Yamashita Daiki , Taniguchi Takashi , Watanabe Kenji , Kato Yuichiro K. 
Published: July 2022

When continued device scaling reaches the ultimate limit imposed by atoms, technology based on atomically precise structures is expected to emerge. Device fabrication will then require building blocks with identified atomic arrangements and assembly of the components without contamination. Here we report on a versatile dry transfer technique for deterministic placement of optical-quality carbon nanotubes [1]. Single-crystalline anthracene is used as a medium which readily sublimes by mild heating, leaving behind clean nanotubes and thus enabling bright photoluminescence. We are able to position nanotubes of a desired chirality with a sub-micron accuracy under in-situ optical monitoring, thereby demonstrating deterministic coupling of a nanotube to a photonic crystal nanobeam cavity. A cross junction structure is also designed and constructed by repeating the nanotube transfer, where intertube exciton transfer is observed. Our results represent an important step towards development of devices consisting of atomically precise components and interfaces.
Parts of this study are supported by JSPS (KAKENHI JP20H02558, JP19J00894, JP20K15137), MIC (SCOPE 191503001), and MEXT (Nanotechnology Platform JPMXP09F19UT0075). Growth of hexagonal boron nitride crystals is supported by the Element Strategy Initiative conducted by the MEXT (JPMXP0112101001), JSPS (KAKENHI JP20H00354), and JST (CREST JPMJCR15F3). K.O. and D.Y. are supported by JSPS (Research Fellowship for Young Scientists). N.F. is supported by RIKEN Special Postdoctoral Researcher Program. We thank T. Inoue, S. Maruyama, and K. Nagashio for help in the material preparation, as well as the Advanced Manufacturing Support Team at RIKEN for technical assistance.
[1] K. Otsuka, N. Fang, D. Yamashita, T. Taniguchi, K. Watanabe, Y. K. Kato, Nat. Commun.12, 3138 (2021).
(Invited, Digital Presentation) Exciton Controlled-NOT Gate Realized By Carbon Nanotube Coupled Quantum Dots
Authors: Hida Akira , Ishibashi Koji 
Published: July 2022

Among various methods for constructing the quantum bits (qubits) required to perform the quantum computing, there is the concept to use the exciton in nano-structured material such as semiconductor quantum dot (QD), colloidal nanocrystal, or molecule. When the presence/absence of exciton is associated with two-level system of |1>/|0>, the Rabi oscillation of exciton serves as a basis for one-qubit operation. In order to realize the controlled-NOT (CNOT) gate which is essential for the quantum computing, one needs four-level system consisting of two qubits (i.e., |0>|0>, |1>|0>, |0>|1>, and |1>|1>). The construction of exciton CNOT gate is theoretically possible, however, the experimental demonstration has not been conducted. The optical processes of carbon nanotubes are governed by excitons. We attempted to realize the exciton CNOT gate by using the coupled QDs formed in a carbon nanotube.
We fabricated two QDs by terminating both ends of a single-walled carbon nanotube (SWNT) with the collagen model peptides via peptide bonds. The scanning tunneling microscopy and spectroscopy measurements revealed that two QDs of ~ 3.1 nm and ~ 3.9 nm in widths, respectively, were formed in that SWNT with the inter-dot spacing of ~ 5.4 nm. It was confirmed by observing the Rabi oscillations that each QD acted as the exciton two-level system. When the excitons were produced in both QDs, additional exciton emission lines appeared, which may be originating from the coupled state of excitons across two QDs. We define the exciton four-level system as follows; |0>|0> when both QDs are empty, |1>|0>/|0>|1> when exciton is present in either of two QDs, and |1>|1> when excitons coupled across two QDs are generated. |1>|0>, |0>|1>, or |1>|1> could be prepared by irradiating the corresponding π pulse determined from the Rabi oscillation.
The CNOT gate consists of a control qubit and a target qubit, and the logic of the target qubit is flipped only if the control qubit is in logic |1>. When we regard two QDs in our sample as a pair of control qubit and target qubit, the conditional flip of the target qubit corresponds to the π pulse-induced transition between |1>|1> and |1>|0> or between |1>|1> and |0>|1> depending on which QD we choose for the target qubit. The exciton CNOT gate operations were executed by irradiating that π pulse onto the states prepared as inputs. The input/output relations were measured in both ZZ and XX bases, which allowed us to estimate the quantum process fidelity. Our exciton CNOT gate actualized the expected operations whichever QD we used as the target qubit. By executing the CNOT gate operations three times, logic exchange is made between |1>|0> and |0>|1>, which is called the SWAP gate. It was also ascertained that the exchange of the exciton population took place between two QDs when conducting the SWAP operation by applying our CNOT gate.
(Invited) Graphenemesosponge: A New Carbon Material with High Porosity and High Durability for Battery Applications
Authors: Nishihara Hirotomo 
Published: July 2022

There are many kinds of carbon materials such as activated carbons, nanoporous carbons, carbon blacks, graphite, carbon nanotubes, carbon nanofibers, and graphene-like materials, and they have been used in a variety of batteries as active materials, conductive additives, and gas diffusion layers. Depending on the purpose of use, carbon materials are required to have appropriate porosity, electric conductivity, mechanical stability, and electrochemical stability. While the above mentioned carbon materials have individual advantages and disadvantages, it has been a challenging target to develop next-generation carbon materials to satisfy all the necessary requirements at the same time. In this talk, a new class of carbon material, “graphene mesosponge (GMS)”, is introduced as a feasible candidate [1]. GMS is synthesized by a hard-templating method using Al2O3 [1] or MgO [2] nanoparticles via precisely controlled chemical-vapor deposition in which the average stacking number of graphene sheets is adjusted to 1. After template removal, the resulting mesoporous carbon is annealed at 1800 °C to form GMS. By such a high-temperature treatment, most of carbon edge sites which cause corrosion of batteries can be removed, and GMS exhibits ultra-high stability against chemical oxidation as well as electrochemical oxidation. Despite such durability, GMS possess a high surface area (ca. 2000 m2/g) and a large pore volume (> 3 cm3/g). Moreover, GMS has a high electric conductivity which is superior to carbon blacks. Furthermore, GMS is mechanically flexible and tough. GMS shows reversible deformation and recovery upon applying mechanical force and its removal [3]. Such unique properties of GMS enable its use as next-generation durable and high-performance carbon material to battery applications. As an electrode material for electric double-layer capacitors, GMS exhibits ultra-high voltage stability up to 4.4 V even in a conventional organic electrolyte (Et3MeN/BF4), which surpass single-walled carbon nanotubes [4]. Also, GMS is useful to a Pt support of polymer-electrolyte fuel cells [5] and to a cathode of Li-air batteries.
References
[1] H. Nishihara, T. Simura, S. Kobayashi, K. Nomura, R. Berenguer, M. Ito, M. Uchimura, H. Iden, K. Arihara, A. Ohma, Y. Hayasaka, T. Kyotani, Adv. Funct. Mater. 2016, 26, 6418-6427.
[2] S. Sunahiro, K. Nomura, S. Goto, K. Kanamaru, R. Tang, M. Yamamoto, T. Yoshii, J. N. Kondo, Q. Zhao, A. Ghulam Nabi, R. Crespo-Otero, D. Di Tommaso, T. Kyotani, H. Nishihara, J. Mater. Chem. A 2021, 9, 14296-14308.
[3] K. Nomura, H. Nishihara, M. Yamamoto, A. Gabe, M. Ito, M. Uchimura, Y. Nishina, H. Tanaka, M. T. Miyahara, T. Kyotani, Nat. Commun. 2019, 10, 2559.
[4] K. Nomura, H. Nishihara, N. Kobayashi, T. Asada, T. Kyotani, Energy Environ. Sci. 2019, 12, 1542-1549.
[5] A. Ohma, Y. Furuya, T. Mashio, M. Ito, K. Nomura, T. Nagao, H. Nishihara, H. Jinnai, T. Kyotani, Electrochim. Acta 2021, 370, 137705.
(Invited, Digital Presentation) Ultrathin Lateral Heterostructures Based on Two-Dimensional Semiconductors
Authors: Kitaura Ryo 
Published: July 2022

Low-dimensional (2D) materials, including carbon nanotubes, graphene, boron nitrides, and transition metal dichalcogenides (TMDs), have provided a platform to explore novel physics at the nano-scale. In addition to the fascinating properties of low-dimensional materials themselves, they allow exploring novel superstructures, such as heterojunctions, heterostacks, and superlattices, which give even broader possibilities. We are working on low-dimensional superstructures fabricated by (1) crystal growth with metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), and (2) stacking each component with the full-dry-transfer-based manipulation technique[1]-[6].
This presentation will focus on our recent works on low-dimensional superstructures, such as 2D ultrathin lateral superlattices. For example, we have successfully realized MoS2/WS2 2D lateral superlattices with a periodicity of down to one-atom-thick by MOCVD with an automatic valve control system. Also, we have observed characteristic PL arising probably from 1D junction structures. More details on the fabrication and optical properties of these superstructures will be addressed in this talk.
[1] Y. Murai, et. al., ACS Nano 2021, doi.org/10.1021/ascnano.1c04584

[2] T. Hotta, et. al., ACS Nano 2021, 51:1370-1377.
[3] T. Hotta, et al., Phys. Rev. B 2020, 102:115424.
[4] S. Zhao et al., Phys. Rev. Lett. 2020, 124:106101.
[5] Y. Uchiyama et. al., npj 2D Mater. App. 2019, 3:26.
[6] M. Okada, et. al., ACS Nano 2018, 12:2498-2505.
(Invited, Digital Presentation) 50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device
Authors: Nagashio Kosuke 
Published: July 2022

2D heterostructures have been extensively investigated as next-generation non-volatile memory (NVM) devices. In the last decade, drastic performance improvements and further advanced functionalities have been demonstrated. However, this progress is not sufficiently supported by the understanding of their operations, obscuring the material and device structure design policy. Here, detailed operation mechanisms are elucidated by exploiting the floating gate voltage (V
FG) trajectory measurements [1,2]. Systematic comparisons of MoTe2, WSe2, and MoS2 channel devices revealed that the tunneling behavior between the channel and FG is controlled by three kinds of current-limiting paths, i.e., tunneling barrier, 2D/metal contact, and pn junction in the channel. Based on the understanding of the memory operation mechanism through the V
FG trajectory measurement, we propose the best all 2D NVM device structure with a direct tunneling path between source/drain electrodes and floating gate for ultrafast memory operation. Indeed, a 50 ns program/erase operation is successfully achieved [3]. Moreover, we examined the dielectric breakdown strength (E
BD) of h-BN under short voltage pulses for the origin for this ultrafast operation, because a high dielectric breakdown strength allows a large tunneling current. Surprisingly, an E
BD = 26.1 MV/cm for h-BN is realized under short voltage pulses, largely exceeding the E
BD = ~12 MV/cm from the DC measurement. This suggests that the high E
BD of h-BN can be the physical origin of the ultrafast operations. In this talk, I would like to discuss the future perspective of 2D NVM application.
[1] T. Sasaki, KN, et al., "Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage", Small, 2020, 16, 2004907.
[2] T. Sasaki, KN, et al., "Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory", ACS nano, 2021, 15, 6658.
[3] T. Sasaki, KN, et al., "Ultrafast Operation of All 2D-Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN", Adv. Funct. Mater. (under revision).
(Invited) Novel Acene-Based Molecules and Materials for Singlet Fission
Authors: Hasobe Taku 
Published: July 2022

Singlet fission (SF) is a multi-exciton generation process in two neighboring organic chromophores (S1 + S0) where two individual triplet excitons (T1 + T1) are generated from one-photon absorption through a correlated triplet pair (TT). Therefore, SF is highly promising for construction of next-generation light energy conversion systems and quantum information science. In addition to the close interaction of two neighboring chromophores, energy-level matching condition between a singlet and two triplet states: [E(S1) ≥ 2E(T1)] are required for efficient SF.
Observation of SF was widely discussed under various condition such as solid-state films and covalently-linked molecular dimers in homogeneous solution. In contrast, inorganic nanomaterials such as quantum dots and metal nanoclusters demonstrated the characteristic optical and electrochemical properties as compared to organic molecules. However, the number of organic-inorganic hybrid systems for efficient SF is extremely limited.1-3 Furthermore, there are no reports regarding SF systems using liquid molecules.4 In this presentation, we present our recent research results regarding novel acene-based molecules and materials for SF.

References

Sakai, H.; Inaya, R.; Tkachenko, N. V.; Hasobe, T. Chem. Eur. J.
2018,
24, 17062-17071.

Saegusa, T.; Sakai, H.; Nagashima, H.; Kobori, Y.; Tkachenko, N. V.; Hasobe, T. J. Am. Chem. Soc.
2019,
141, 14720-14727.

Zhang, J.; Sakai, H.; Suzuki, K.; Hasobe, T.; Tkachenko, N. V.; Chang, I. Y.; Hyeon-Deuk, K.; Kaji, H.; Teranishi, T.; Sakamoto, M. J. Am. Chem. Soc.
2021,
143, 17388-17394.

Yoshino, K.; Sakai, H.; Shoji, Y.; Kajitani, T.; Anetai, H.; Akutagawa, T.; Fukushima, T.; Tkachenko, N. V.; Hasobe, T. J. Phys. Chem. B
2020,
124, 11910-11918.