bluuebunny/crossref_metadata_2025_split huggingface dataset:
Pedestal instabilities during the L-H transition in ASDEX-Upgrade plasmas
Authors: Clairet Frederic , Glasser Anna , Conway Garrard D , Bottereau Christine 
Published: February 2025

Abstract
The enhanced confinement regime, or H-mode, is the result of a transport barrier at the plasma edge, where the pressure rises sharply to form a pedestal. This paper reports on a collection of experimental observations of instabilities and turbulence occurring in this decisive and narrow edge region. Using the high sampling rate enabled by an ultra-fast frequency sweeping reflectometer (UFSR), a high spatial and temporal resolution analysis of density, gradients, and turbulence allows new and thorough insights on plasma instabilities arising from the microturbulence and flow competing system during the I-phase to the ELMs and blob-filaments during the established H-mode. The measurements provide the observation on how different instabilities can arise in the pedestal during the L-H transition and address their specific turbulent natures.&#xD;
Machine learning methods for locked-mode predictions in MAST-U plasmas
Authors: Gambrioli Matteo , Piron Lidia , Pau Alessandro , Cunningham Geoffrey , Piron Chiara , Ryan David Anthony , Martin Piero 
Published: February 2025

Abstract
In tokamaks, rotating magneto-hydro-dynamic (MHD) modes frequently decelerate as their amplitude increases. Once a critical threshold in amplitude is reached, these modes stop rotating into a specific toroidal and poloidal position and are commonly named locked modes (LM). The presence of LMs, especially with low toroidal mode numbers, causes degradation of plasma performance, i.e. particle and energy losses, and can lead to a plasma disruption. Several strategies can be adopted when designing the plasma scenario to avoid the onset of these modes, which foresee the use of plasma heating, current drive methods, error field correction and density rising either via gas puffing or pellet injection. Despite the efforts to avoid the onset of LMs, disruption mitigation systems are considered essential during the International Thermonuclear Experimental Reactor (ITER) operations and in the view of the next fusion reactors such as the DEMOnstration Power Plant (DEMO), which can withstand a limited number of unmitigated plasma disruptions. The necessary condition towards the realization of an effective mitigation system, for safe and steady-state operations, is the development of robust and reliable metrics which are capable of predicting with a sufficient time margin the proximity to a LM. Thanks to the large availability of data, from lots of experimental campaigns performed in different experimental fusion devices, Machine Learning (ML) methods show to be a promising tool towards the achievement of this task. In this context, a wide database of MAST-U discharges has been analyzed considering data from multiple diagnostics with the scope of identifying recurrent paths which lead to LM onset. The data gathered have been the starting point for both the training and testing of two ML models, namely, K-Nearest-Neighbor (KNN) and Classification Tree (CT), developed for mode locking prediction. Both algorithms showed to be very reliable in predicting the proximity to a LM, with low percentages of missed and tardy detections. The methodology adopted for data selection, model training, as well as, the assessment of model performance are described in this work.
Analytical Modeling of 3D Inductor Based on TSV and A LC VCO with Core Area of 0.08mm2
Authors: Cai Mengye , hang zijie , Jiang Yanfeng 
Published: February 2025

Abstract
Through Silicon Via (TSV) technology has shown promising potential in reducing die area and enhancing the quality factor of three-dimensional (3D) inductors on a chip. This paper proposes an efficient methodology for rapidly establishing a TSV inductor. The model takes into account the excess internal inductance of the Redistribution Layer (RDL), and an algorithm is developed to rectify errors arising from current changes in the conductor. The iteration time of the proposed methodology is within 60 ms and has been verified by an electromagnetic simulator, demonstrating a maximum error of less than 1.5% across multiple parameter arrays. Moreover, this paper introduces a voltage-controlled oscillator (VCO) based on TSV technology. Implemented in a standard 180 nm CMOS process, the VCO operates within the frequency range of 2.17-2.35 GHz, with a core area of only 0.08 mm2. The phase noise at a 1-MHz offset is at -129.2 dBc/Hz.".&#xD;
Modeling and Efficiency Enhancement of InGaP/GaAs Dual-Hetero Junction Solar Cells Using AlGaAs and AlGaInP Emitters
Authors: ZIDANI Ikram , Bensaad Zouaoui , Hafaifa Loumafak , Abid Hamza , Hafaifa Ahmed 
Published: February 2025

Abstract
This study focuses on optimizing the performance of InGaP/GaAs dual-hetero junction solar cells (DHJSCs) through advanced material selection and structural modifications using the Silvaco-Atlas simulator. The baseline model, validated against theoretical and experimental benchmarks, served as a foundation for significant efficiency improvements.&#xD;Key innovations include replacing conventional GaAs and InGaP emitters with AlGaAs and AlGaInP, respectively, which enhanced carrier collection and reduced recombination losses due to their superior material properties such as a larger bandwidth. Optimizations of thickness, doping concentration, and back surface field (BSF) properties further minimized performance losses. These refinements resulted in an efficiency increase from 32.83% to 41.60%, with an additional rise to 42.68% at a reduced operating temperature of 15°C. This work emphasizes the potential for achieving higher efficiencies and lower manufacturing costs by leveraging structural simulation to streamline solar cell design and development. The findings set a benchmark for future research and practical implementations in the field of high-efficiency photovoltaic technologies.&#xD;
Novel (CH3NH3)3Bi2I9 perovskite solar cells processed by in-situ gas-solid reaction
Authors: Zhao Chaoliang , Yu Haili , Zhang Busheng , Wang Lingling , Zheng Zhi 
Published: February 2025

Abstract
(CH3NH3)3Bi2I9 thin films were synthesized via direct metal surface element reaction (DMSER) by using the bismuth thin films as precursors, which is simple to operate, low energy consumption, without organic solvent added in the reaction process. The film prepared at 220 oC for 3 h not only exhibit the better crystallinity and compactness, but also remain stable when exposed in the air for more than 100 days. In this work, a novel gas-solid reaction mechanism is described. Transient surface photovoltage (TSPV) indicates that the synthesized (CH3NH3)3Bi2I9 film is a p-type semi-conductor material. Finally, the solar cell with the structure of FTO/TiO2/(CH3NH3)3Bi2I9/Spiro-OMeTAD/Au obtained the power conversion efficiency (PCE) of 0.039%.
Multifaceted impacts of reliability issues: trap dynamics, positive bias temperature instability, and effect of temperature on the HSSP-nTFET
Authors: Mili George , Bhowmick Brinda 
Published: February 2025

Abstract
This study investigates the influence of interface trap charges on the performance parameters of the proposed lateral hetero-stacked source with pocket n-type tunneling field-effect transistor (HSSP-nTFET). The influence of different concentrations of donor and acceptor trap charges on the device's DC performance metrics is thoroughly examined. It is observed that the presence of interface traps in the device leads to variations in both the threshold voltage (Vth) and subthreshold swing (SS).To evaluate the impact of various interface trap charges (ITCs) on analog/RF performance, critical parameters including electric field characteristics, Transconductance (gm), parasitic capacitance, cut-off frequency (fT), gain-bandwidth product (GBP), transit delay, TFP, Rout and device efficiency have been comprehensively analyzed for the HSSP-nTFET. Additionally, this work investigates the reliability of the proposed device by analyzing its susceptibility to interface trap conditions, temperature variations (280 to 480k), and also, PBTI (Positive Biased Temperature Instability) induced degradation, as inspected in this study, poses significant reliability concerns for analog/digital circuit design, necessitating careful consideration and mitigation strategies. Vital statistics yielded in this 3D simulation research are on-current (ION=8.18E-5 A/μm), off-current (IOFF=1.33E-19 A/μm), Vth=0.18V, SSavg=14 mV/dec, gm=1.86E-4 S and fT=0.384 THz which can serve as a strong contender for energy-efficient and high-performance applications.&#xD;
Study of Ge-on-Si Avalanche Photodiodes for Short-Wave Infrared Applications
Authors: Latargez Charlotte , Durlin Quentin , Vialle Claire , Le Cocq Mélanie , Schembri Antoine , Hartmann Jean Michel , Crochemore Romain , Gabriel LIMA , Grosse Philippe , André Luc , Aliane Abdelkader 
Published: February 2025

Abstract
Vertical germanium-on-silicon (Ge/Si) avalanche photodiodes offer the advantages of being low-cost, CMOS-compatible and demonstrating high performance for the development of Short-Wave Infrared (SWIR) sensors for telecommunications. Nevertheless, the origins of dark current and noise in Ge-on-Si APDs still need to be clearly identified to improve their performance. In this paper, we report the study of the electro-optical characteristics of fabricated Ge-on-Si Avalanche Photo Diodes. A maximum gain of 95 was achieved at -33 V on these devices (λ = 1550 nm and P = 0.4 mW). Technology Computer-Aided Design (TCAD) simulations were compared with measurements to extract the parameters of the ionization model. Through dark current measurements at various temperatures, we extracted the activation energy at different bias voltages. The dark current is governed by generationrecombination Shockley-Read-Hall (SRH) mechanisms in silicon and germanium below and above the punch-through bias, respectively. Low frequency (LF) noise measurements performed on a 10-µm diameter Ge/Si APD device under dark current conditions showed the presence of a 1/f noise prior to multiplication, confirming a dominant SRH mechanism.&#xD;
Improved Electrical Properties of AlGaN/GaN MIS-HEMTs with Thermal and Plasma-enhanced ALD Al2O3 Gate Dielectric
Authors: Wang Liu , Cui Peng , Chen Qianding , Yang Ming , Linewih Handoko , Qi Kaifa , Chen Siheng , luo xin , Dai Jiacheng , Lin Zhaojun , Xu Xiangang , Han Jisheng 
Published: February 2025

Abstract
In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) and metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with 5 nm Al2O3 gate dielectric grown by thermal atomic layer deposition (TALD) and plasma-enhanced atomic layer deposition (PEALD) were investigated. Polarization Coulomb field (PCF) scattering intensity was reduced and electron mobility was improved due to low additional polarization charges and a high two-dimensional electron gas density (n2d) in MIS-HEMTs. PEALD MIS-HEMT has a lower threshold voltage (Vth) and more significant gate leakage current (IG) suppression than TALD MIS-HEMT. Compared with HEMT, a lower IG (~ 4 orders), a higher on/off current ratio (Ion/Ioff) (~ 4 orders), a higher transconductance peak (gm.peak) (~ 26%) are recorded in PEALD MIS-HEMT. Moreover, breakdown voltage (VBR) of PEALD MIS-HEMT and TALD MIS-HEMT is improved by ~ 53% and ~ 33% respectively, due to the effective suppression of electric field at gate edge.
Measuring valence band offsets in ReSe2/(0001)GaN, ReSe2/(11-22)GaN, and ReSe2/(11-20)GaN heterostructures
Authors: Lin Jingbo , Zhao Guijuan , Lv Xiurui , Hao Zhiyuan , Wei Wanting , Wang Xingliang , Wang Lianshan , Liu Guipeng 
Published: February 2025

Abstract
Compared to conventional (0001)-oriented GaN-based devices, which suffer from performance-degrading polarization effects at the heterojunction interfaces, semipolar (11-22) GaN and nonpolar (11-20) GaN have demonstrated significant potential for reducing or eliminating these polarization effects, thus offering possibilities for enhancing device performance. Here, we have fabricated ReSe2/(0001) GaN, ReSe2/(11-22) GaN, and ReSe2/(11-20) GaN heterostructures to investigate the impact of different GaN crystal orientations on the band alignment of ReSe2/GaN heterostructures. Band alignments were characterized using XPS. The measured VBOs for the three ReSe2/GaN heterostructures (polar, semipolar, nonpolar) were determined to be 3.08 ± 0.15 eV, 2.62 ± 0.15 eV, and 2.24 ± 0.15 eV, respectively, while the calculated CBOs were 1.51 ± 0.15 eV, 1.05 ± 0.15 eV, and 0.67 ± 0.15 eV, respectively, indicating type II band alignment for all three heterostructures. The significant influence of different GaN surface orientations on heterostructure performance revealed herein provides an important reference for the design and optimization of high-performance devices based on these materials in the future.
TOPCon solar cells with optimized emitter structure parameters based on CuO2 material
Authors: Hu Jichao , Yang Xiaodong , Zhang Zihan , Li Yao , Zhang Chao , Wang Xi , Yuan Lei , Yang Yuan , He Xiaomin 
Published: February 2025

Abstract
Because of its environmental protection, pollution free, renewable and other advantages, photovoltaic energy has become one of the most potential for research and development. Among them, the Tunnel Oxide Passivated Contact (TOPCon) solar cells solar cells with its excellent passivation structure is highly competitive in efficiency and cost. To mitigate the optical limitations of the emitter and enhance the overall efficiency of TOPCon solar cells, through numerical simulation analysis, the structural parameters of the emitter region of the CuO2-based TOPCon solar cells were optimized, and the conversion efficiency of the optimized solar cells reached 21.82%. Then, by comparing and analyzing the performance of the TOPCon solar cells based on CuO2 and the TOPCon solar cells based on polysilicon with the change of the emitter structure parameters, the influence mechanism of the change of material’s band gap width on the relationship between solar cells structure parameters and performance is further explored. Comparing the optimal structural parameters of TOPCon solar cells based on CuO2 and polycrystalline silicon, it was found that an increase in bandgap width leads to a decrease in the optimal emitter thickness of the solar cells, reducing production costs.
Impact of particle charge and electrorheology-effects on dust-acoustic waves in low pressure complex plasma under microgravity
Authors: Wimmer L , Dormagen N , Klein M , Kretschmer M , Lipaev A M , Schwarz M , Usachev A D , Petrov O F , Zobnin A V , Thoma M H 
Published: February 2025

Abstract
This study investigates the influence of particle charge and electrorheological (ER) effects on microparticle dynamics and dust-acoustic wave propagation in low-pressure complex plasmas under microgravity conditions. Experiments were conducted using PK-4 during parabolic flights and onboard the International Space Station to analyze dust particle behavior in direct current (DC) and DC polarity switching discharge plasma. Key findings reveal that variations in particle charge potential and ER effects significantly affect particle dynamics, especially at different gas pressures. Specifically, we validated a dimensionless charge potential of

z
=
0.34
±
0.17

in a DC neon plasma discharge, noting a rapid increase in this potential at pressures below 15 Pa. Furthermore, we observed a reduction in charge of up to 50% due to quadrupole effects induced by polarity switching. These results provide critical insights into plasma behavior in microgravity and the role of external electric fields in particle interactions.
Bound Domains
Authors: Voit G. Mark 
Published: February 2025

Abstract
How much energy is required to unbind baryons from the cosmological structures that originally bind them? This tutorial article explains why trying to answer this question using just a halo model can be misleading. Instead, it recommends parsing the universe into “bound domains,” which are the gravitationally bound structures that ultimately become widely separated islands as the universe evolves. It explains why a bound domain’s potential well was about as deep ∼1 Gyr after the Big Bang as it is now, and it outlines how future research might take advantage of a bound-domain approach to make progress on some open questions about the baryon distributions in and around galaxy groups and clusters.
Impact of nonlocal electron heat transport on ablative hydrodynamic instability growth seeded by localized perturbations
Authors: Li Jun , Lei Zhu , Li Zhiyuan , Rui Yan , Zhao Bin , Liu Yunxing , Xue Chuang , Chen Zhu , Li Jiwei , Wu Jun-feng , Wang L. F. , Zou Shiyang 
Published: February 2025

Abstract
The hydrodynamic instability growth seeded by localized perturbations exerts a significant influence on the performance of inertial confinement fusion implosions. Direct-drive, planar target ablative hydrodynamic instability growth simulations were performed to study the evolution of localized perturbations at peak drive intensities of ignition designs. The study focused on hydrodynamic instability seeded by Gaussian bumps and rectangular pits on the target outer surface at a laser intensity of about $9 \times 10^{14} \, \rm W/cm^2$. The findings indicated that the nonlinear growth of localized perturbations is significantly influenced by nonlocal electron heat transport. It was observed that the small-scale Gaussian bump experiences a phase reversal before the target acceleration phase and evolves into an isolated bubble, with spikes growing obliquely on both sides tending to heal the void created by the bubble. Notably, nonlocal electron heat transport effects slow down void healing and nonlinear bubble growth, which can prevent defects from penetrating the target shell prematurely. For rectangular pits with larger lateral dimensions, no overall phase reversal occurs before target acceleration, and the nonlinear bubble growth is similarly suppressed.&#xD;These findings underscore the importance of considering nonlocal electron heat transport effects in multi-dimensional implosion simulations.
Temperature-adaptive design: application and optimization of CFRP in automobile B-Pillar structure
Authors: Yang Haiyang , Liu Wei , Ran Wenhao , Gao Jin , Liu Lirong , Yang Jiandong 
Published: February 2025

Abstract
To enhance automobile safety and strengthen the B-pillar, one of the methods is to use CFRP material as a reinforcement plate to form a mixed material B-pillar. When the ambient temperature changes, stress is generated between them due to different coefficients of thermal expansion of each material, which weakens the support of the reinforcement plate to the outer panel and reduces the overall strength of the B-pillar. To address this issue, this paper proposes an innovative solution: for the first time, a partition is introduced to create a sealed cavity and the higher thermal expansion coefficient of air within the enclosed space is utilized to compensate for the difference in thermal expansion coefficients between the CFRP and the steel outer panel. This ensures synchronous deformation of the reinforcement plate and the outer plate during temperature changes, providing effective support to the outer panel.
Application of installation method coupling rigidity and flexibility in shipboard equipment
Authors: Cheng Xiaoping , Zhu Xuekai 
Published: February 2025

Abstract
After launching a large naval ship, the hull structure may deform due to many factors, such as welding stress relief and nonuniform sunlight radiation. After installation, shipboard equipment should promise the ability to adapt to deformation, thereby avoiding generating internal stress. Here, the requirement of the shipboard equipment is first analyzed. For example, the deformation value and direction are obtained through the simulation analysis of deformation under the summer and winder installation conditions. Combined with the anti-overturning requirement of the shipboard equipment under a tilt of 45°, the supporting force required by the front end of the equipment is calculated, and then the design requirements of rigid and flexible installation are proposed. Based on the above results and the theoretical analysis of the performance characteristics of the belleville springs, the elastic bolts with the structure of the combined dish belleville are designed, and their mechanical properties are verified by the tests. The results show that the installation method can adapt to the deformation of the hull of about ±3mm, which meets the installation requirements and use of some shipborne equipment, thus providing a certain reference value for the design of the installation structure when the installation surface is deformed.
Analysis of the causes of failure in the rubber lining of the concentrated hydrochloric acid storage tank at a nuclear power plant
Authors: Yang Kun , Lv Yang , Yang Kewei , Fang Qishu , Li Weiguang 
Published: February 2025

Abstract
The rubber lining in a condensate polishing system of a nuclear power plant exhibited significant blistering and cracking shortly after the operation, posing a safety risk to the chlorine storage tank. Extensive analysis, including thermal gravimetric analysis, infrared spectroscopy, mechanical testing, and scanning electron microscopy, was conducted to assess the rubber lining thoroughly. Subsequently, the lining underwent a 72-hour immersion test in 31 % hydrochloric acid at 50°C to evaluate its performance. The results revealed that the rubber content of the lining was 55.7 %, with natural rubber as the material type. Although there was minimal change in mass following hydrochloric acid exposure, both tensile strength and hardness were compromised. Macroscopic and microscopic observations suggested that improper operation during mixing or curing processes led to uneven distribution of components within the lining, allowing for hydrochloric acid penetration through defects and subsequent blistering.
Low cycle fatigue behavior of Cu-Cr-Zr-La alloys
Authors: Zhi Hairui , Zhao Haitao 
Published: February 2025

Abstract
The low fatigue properties of Cu-Cr-0.1Zr-0.07La alloy were tested at room temperature. The Cu-Cr-0.1Zr-0.07La (mass fraction, %) alloy was synthesized using a medium-frequency vacuum casting furnace under an argon atmosphere, followed by successive processes of uniformization, thermal rolling, solid solution processing, and aging, resulting in the ultimate formation of an alloy. The fatigue properties of the alloy under various strain amplitudes were studied by fatigue test, and the fracture morphology of the alloy was analyzed by scanning electronic microscope (SEM). The results indicate that the fatigue life of alloy is 11,808 cycles, 5,121 cycles, and 804 cycles for overall strain amplitude of 0.2%, 0.3%, and 0.4%, respectively. The amplitude of elastic strain in Cu-Cr-0.1Zr-0.07La alloys can be indicated by the Basquin equation. The plastic strain amplitude is described by the Coffin-Manson equation. Furthermore, the crack propagation region of Cu-Cr-0.1Zr-0.07La alloy exhibits observable tear edges and a limited presence of dimple morphology.