bluuebunny/crossref_metadata_2025_split huggingface dataset:
FIB-SIMS in FIB-SEMs—Practical Aspects for Physical Failure Analysis
Authors: Stegmann Heiko , Schulz Hubert , Whitby James 
Published: October 2022

Abstract
Secondary ion mass spectrometry (SIMS) is a well-established method in semiconductor manufacturing process control and development for trace metal and organic contaminant detection, as well as for depth profiling of ultra-thin film stacks and total dopant concentrations. Using a focused ion beam (FIB) as the primary ion beam provides a versatile and highly sensitive analytical technique with lateral resolution down to a few tens of nanometers, an appropriate technique for targeted failure analysis on functional device structures. This paper presents an example to show the potential of FIB-SIMS to support failure analysis, concentrating on practical aspects of the technique.
PFIB Delayering—Nanoprobing Workflow on 5nm FinFET device
Authors: Choi Ha Young , Kang Christopher H. , Lowe William 
Published: October 2022

Abstract
As advanced device technologies scale to 5nm with dimensions getting smaller and materials change, it is difficult to control the sample preparation delayering end pointing by polishing. Therefore, it requires an alternative solution such as Xe+ PFIB (Plasma Focused Ion beam) Microscopy for accurate delayering control. PFIB can be used for planar Failure Analysis (FA) delayering but also for nanoprobing sample preparation. This paper introduces the detail of nanoprobing sample preparation by PFIB and discusses nanoprobing results on 5nm FinFET technology.
Strategies to Identify Physical Origin of Contrast in EBIRCH
Authors: Moldovan Grigore , Courbat William 
Published: October 2022

Abstract
The Electron Beam Induced Resistance Change (EBIRCH) technique is becoming more popular for localization of defects in Electrical Failure Analysis (EFA). Whilst EBIRCH is clear and straightforward in the procedure that must be followed for localization, it does not provide a direct understanding of the fundamental origin of its signal. This contribution addresses this significant shortfall in the technique, proposing a few basic experimental steps to be added to the technique in continuation of localization, with the principal aim of interrogating the physical origin of signal.
Impact of PFIB Gas Assisted Delayering on MOSFET Degradation
Authors: Sapir Zvika , Dimnich Oksana , Raz Avraham 
Published: October 2022

Abstract
Delayering is an essential sample preparation step in physical failure analysis (PFA) of integrated circuits (IC). During delayering it is crucial to precisely control the endpoint and uniformity of the region of interest (ROI). Furthermore, to perform SEM based nanoprobing it is also required to end the delayering process without residues on the surface that will reduce conductivity of, or induce shorts between, isolated contacts. Delayering via mechanical polishing has been the main approach for PFA and nanoprobing. However, as the shrinkage of the interconnect layer thickness reduced below 100 nm, it has become very challenging to control the polish endpoint and to achieve robustly controlled process. Recently gas assisted Xe+ Plasma FIB (PFIB) has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. The purpose of this study is to analyze the PFIB ion beam interaction with MOSFET devices, addressing ion beam damage related device degradation. We explored the final surface treatment required for nanoprobing and the impact on MOSFETs. For this purpose, we monitored device parameters after PFIB delayering final steps with different beam conditions and compare PFIB prepared samples to polished prepared samples. Consequently, we summarize the considerations of parameters for ion beam on final surface treatment.
Electrostatic Discharge (ESD) Damage of Nanoprobes and How to Prevent It
Authors: Anderson N. T. , Lockledge S. P. 
Published: October 2022

Abstract
Electrostatic discharge (ESD) can easily damage the nanoprobes used in the failure analysis of semiconductor devices. Nanoprobes with tips that have radii of curvature of a few nanometers are especially sensitive to ESD damage, because applying even modest electrical potentials leads to high electrical fields at the tip of the sharp probe. ESD damage has been used as an umbrella explanation to explain a variety of probe failures and undesirable tip features, but due to the stochastic nature of these events, its effect on nanoprobes has hitherto not been well documented. This paper describes the effect that ESD events have on the tip profile of nanoprobes and describes best practices so that such events can be more readily diagnosed and prevented by nanoprobe users. The likelihood of an ESD event occurring can be reduced by eliminating potential differences between users and the probes and by regulating laboratory humidity levels.
Inspection of Charge Effect on Metal Layer by Using SCM
Authors: Lee Gyubaek , Park Daehe , Kim Minjung 
Published: October 2022

Abstract
The importance of charging damage grows as the IC industry continues downward scaling. It was found that electrical test on metal pad to check contact failure, layer connection and resistance caused charging damage as serious as plasma charging. As for the side effect of it, DC charge is accumulated on the metal TEG, which causes some failure such as incomplete etch problems in the next metal fabrication. This paper provides that charge effect on metal surface is able to be verified by Scanning Capacitance Microscope (SCM). SCM has been used to analyze carrier trap on semiconductor layer in 2D mapping image as well as dopant distribution. In this paper, we will present SCM as more effective and sensitive than contact based DC-EFM (Electrostatic Force Microscope) and verify how to detect the charge on the surface of metal with a physical model based on a parasitic capacitance. It is possible to analyze MIM (Metal-Insulator-Metal) structure because permittivity of insulator is varied like MOS (Metal Oxide Semiconductor) for induced dielectric dipole polarization. Even though it is required to deposit additional insulator layer on a metal, it is highly beneficial to inspect charge effect during post-processing.
Complementary Fault Isolation Procedures Combining Laser Voltage Probing/Imaging and Lock-In Thermography—Case Studies
Authors: Lee Sukho , van Veenhuizen Marc 
Published: October 2022

Abstract
Failure analysis engineers apply a combination of conventional static fault isolation tools such as OBIRCH, PEM, or lock-in thermography (LIT) to detect simple short defects. However, if the defect is located in a complex circuit, analysis can be more challenging. Laser voltage probing and imaging (LVx) is widely used but will have difficulty in localizing a defect in the backend layers. The combination of LVx and LIT can resolve complex short cases that either of these techniques alone cannot easily do. This paper introduces the thermal effect of LVx and applications of LIT for functional analysis, and it describes and provides case histories for complementary fault isolation procedures for detecting defects in metal layers and transistors.
Failure Analysis Methodology Comparison to Define Potential Root Cause on Lifted Copper Ball Bond
Authors: Hoon Ong Pei , Yee Tan Sze , Wee Lo Chea 
Published: October 2022

Abstract
Copper (Cu) material was extensively studied in the past years and widely implemented in high volume wire bonding process as a replacement of Gold (Au) material during semiconductor device fabrication. No doubt, Cu wire provide low cost alternative to gold with higher thermal and electrical conductivity, but it does pose some drawback especially after reliability stress. One of the most common problem was ball lifted after component gone through several reliability stress tests. In this paper, several FA analytical techniques and procedures will be discussed in detail to demonstrate the use of these techniques in ball lifting investigation.
AKONIS—SIMS Excellence Brought To The Fab
Authors: Robbes AS. , Dulac O. , Soulard K. , Liu R. , Choi S. , Salle B. , Jacobson D. 
Published: October 2022

Abstract
This paper describes the new Cameca Akonis secondary ion mass spectrometry (SIMS) tool, which was developed to fill a critical gap in semiconductor fabrication processes by providing high throughput, high precision detection for implant profiles, composition analysis, and interfacial data directly in the semiconductor manufacturing line. The system enables automation in the primary ion column to ensure repeatability across tools for fabrication-level process control and tool-to-tool matching.
AI Application in Yield and Failure Analysis to Reduce Overall Time-to-Defect and Failure Root-Cause Isolation
Authors: Suthar Sailesh , Lay Goh Lay 
Published: October 2022

Abstract
This paper presents conceptual application of AI in Failure Analysis to connect to various databases in semiconductor manufacturing and generating interactive data visualization to isolate root cause of failure faster vs traditional methods. Generally available low-cost software application like Microsoft Power BI (Business Intelligence) is utilized to visualize big data to isolate failure modes at wafer, die, and package level. This historic data visualization knowledge is further used by failure analyst to process failure mode isolation much faster based on failed package unit history. Semiconductor manufacturing companies have various big data such as wafer fab processing, die level test, or wafer sort and packaged die testing including customer return. MS Power BI application has ability to connect to these separate big databases and create unified data visualization to isolate failure modes through faster inter-connectivity and "connecting the dots" to provide bigger picture or drill down to finer unit level detail. This level of visualization utilizes already available info/data to help reduce overall time-to-defect. With this failure background, engineers can plan fault isolation and analysis and reduce overall time to find root-cause of failure.
Die Level Traceability as an Essential Tool in Failure Analysis and the Road to Zero Defects
Authors: Estores Rommel , Salimbangon Jon Carlo 
Published: October 2022

Abstract
The success of failure analysis and related investigations rely on the quality of information made available to the investigating team. When die level traceability (DLT) is implemented on the product, the actual location of a particular unit in the wafer and all the available data can be traced back and pieced together to reveal insights on the possible root cause( s). The data for the specific unit can be determined, then analyzed and compared with the lot distribution to check for any information that could help the analyses and investigations. With access to the original data, a failing unit can be investigated to determine which data have changed which can prove essential to the direction of failure analysis approach. Four case studies will be discussed to demonstrate how DLT enabled fast, accurate and detailed root-cause identification leading to effective corrective and preventive actions.
An Innovative Technique for Large-Scale Delayering of Semiconductor Devices with Nanometric-Scale Surface Flatness
Authors: Nowakowski P. , Liu J. , Boccabella M. , Ray M. , Fischione P. 
Published: October 2022

Abstract
We describe a fully integrated solution for millimeter-scale delayering of both logic and memory semiconductor devices. The flatness of the delayered device is controlled by an artificial intelligence algorithm, which uses feedback from multiple analytical detectors to control milling parameter adjustments in real time. The result is the precise removal of device layers and a highly planar surface.
Case Study on Sample Preparation Method to Eliminate the Artifact for Auger Analysis on Bond Pad
Authors: Somu Hemalatha 
Published: October 2022

Abstract
In today’s advanced technology world, electronic devices are playing a key role in modern semiconductor products to improve the energy proficiency. These devices are required to be contamination free especially on the bond pad with good adhesion before wire bonding process at the back end. Contamination on the bond pad leads to reliability issues such as pad corrosion, delamination and failure leading to leakage and open fails of electronic devices. Therefore, detection accuracy and sensibility of contamination is important. Auger analysis is the most suitable technique to check bond pad contamination. Auger electron spectroscopy has the capability of analyzing compositional information with excellent spatial resolution. However, charging, noise or artifact is known to be a major concern to the characterization of insulating materials. This paper outlines the strategy that has been utilized to minimize the artifact, noise or charging impact for Auger investigation on a smaller bond pad surrounded by imide passivation layers. The imide passivation layer normally causes the charging effect during Auger analysis, which makes the Auger analysis difficult to be proceed. In addition to that, the charging effect leads to inaccurate analysis. In this paper, we demonstrate a sample preparation method to minimize the charging and artifact of Auger analysis especially for small bond pads.
Yield Basics for Failure Analysts (2022 Update)
Authors: Albert Dave , Meyers Tracy 
Published: October 2022

Abstract
This presentation provides an overview of the terminology and concepts associated with semiconductor yield analysis, modeling, and improvement techniques. It compares and contrasts yield models and describes the steps and equipment involved in setting up yield engineering programs targeting specific failures and defects. It also includes case histories showing how different yield analysis models have been used to identify the root cause of random and systematic failures.
Photonic Localization Techniques (2022 Update)
Authors: Boit Christian 
Published: October 2022

Abstract
This presentation provides an overview of photonic measurement techniques and their use in isolating faults and locating defects in ICs. It covers transmission, reflectance, and absorption methods, describing key interactions and important parameters and equations. Reflectance methods discussed include electro-optical probing (EOP), electro-optical frequency modulation (EOFM), and laser-voltage imaging (LVI). Absorption methods covered include those based on the absorption of light in semiconductors, as in optical beam induced current (OBIC), light-induced voltage alteration (LIVA), and laser-assisted device alteration (LADA), and those based on absorption in metals, as in thermally induced voltage alteration (TIVA), optical beam induced resistance change (OBIRCH), and thermoelectric voltage generation or Seebeck effect imaging (SEI). The presentation also covers thermoluminescence (lock-in thermography) and electroluminescence (photon emission) measurement methods and assesses hardware security risks posed by current and emerging photonic localization techniques.
Technique Selection for the Front End of Line Defect Localization in Bulk Si FA (2022 Update)
Authors: Johnson Greg 
Published: October 2022

Abstract
This presentation is a pictorial guide to the selection and application of measurement methods for defect localization. The presentation covers passive voltage contrast (PVC), nanoprobing, conductive atomic force microscopy, and photon emission microscopy (PEM). It describes signal types, how the measurements are made, the sensing mechanisms involved, and the output that can be expected.
Transmission Electron Microscopy (TEM) Techniques for Semiconductor Failure Analysis
Authors: Subramanian Sam , Ly Khiem , Chrastecky Tony 
Published: October 2022

Abstract
This presentation shows how transmission electron microscopy (TEM) is used in semiconductor failure analysis to locate and identify defects based on their physical and elemental characteristics. It covers sample preparation methods for planar, cross-sectional, and elemental analysis, reviews the capabilities of different illumination and imaging modes, and shows how beam-specimen interactions are employed in energy dispersive (EDS) and electron energy loss spectroscopy (EELS). It describes the various ways transmission electron microscopes can be configured for elemental analysis and mapping and reviews the advantages of scanning TEM (STEM) approaches. It also provides an introduction to energy-filtered TEM (EFTEM) and how it compares with other TEM imaging techniques.
Machine Learning Based Data and Signal Analysis Methods for Application in Failure Analysis (2022 Update)
Authors: Kögel Michael , Brand Sebastian , Altmann Frank 
Published: October 2022

Abstract
This presentation is an introduction to machine learning techniques and their application in semiconductor failure analysis. The presentation compares and contrasts supervised, unsupervised, and reinforcement learning methods, particularly for neural networks, and lays out the steps of a typical machine learning workflow, including the assessment of data quality. It also presents case studies in which machine learning is used to detect and classify circuit board defects and analyze scanning acoustic microscopy (SAM) data for blind source separation.
Analytical Techniques for Contamination Troubleshooting
Authors: Chia Victor K.F. 
Published: October 2022

Abstract
This presentation provides a systematic approach for assessing contamination risks in semiconductor manufacturing environments and determining an appropriate course of action. It maps out a typical wafer production line and identifies potential entry points for specific contaminants. It explains how to perform a contamination risk assessment and prioritize action items and how to select an analytical technique based on where, in the stack, the contaminant resides. It highlights the differences between direct and indirect techniques and shows where they are likely to be used. It also presents a detailed analytical decision flow chart and three concise case studies.
Sosialisasi Pelatihan Pembuatan Jahe Merah Instan Untuk Minuman Kesehatan di Masa Pandemi Covid 19
Authors: Nurrokhman Agus , Wisnianingsih Nova , Pitono Wuguh 
Published: October 2022

Kegiatan pengabdian kepada masyarakat ini bertujuan untuk memberikan pengetahuan tentang pentingnya menjaga kesehatan diri sendiri serta memberikan pelatihan pembuataan jahe merah instan untuk menjaga kesehatan dimasa pandemi Covid 19 di Desa Sukamekarsari Kecamatan Kalang Anyar Kabupaten Lebak Propinsi Banten. Dari penyuluhan tentang pentingnya selalu menjaga kesehatan diharapkan masyarakat mau menerapkan protokol kesehatan yang telah dihimbau oleh pemerintah dan menjaga kesehatan fisik maupaun mental, mengingat musuh yang kita lawan adalah virus yang tak kasat mata. Untuk menjaga kesehatan mental bisa dengan melakukan aktivitas fisik, mengonsumsi makanan bergizi, menghentikan kebiasaan buruk seperti merokok, membuat rutinitas sendiri, lebih bijak dalam memilah informasi, dan menjaga komunikasi dengan keluarga dan sahabat. Dari pelatihan pembuatan jahe merah instan utuk minuman kesehatan dimasa pandemi Covid 19 ini diharapkan masyarakat dapat membuat sendiri ekstrak minuman herbal tersebut agar dapat digunakan setidaknya untuk menjaga ketahanan tubuh agar terhindar dari ancaman virus ini. Karena ketika sudah terpapar oleh virus ini maka ketahanan dari imun tubuh saja yang bisa menolong penderita dikarenakan vaksin untuk virus ini belum diketemukan. Selain untuk dikonsumsi sendiri, jahe merah instan ini juga dapat digunakan untuk tambahan pemasukan jika dikembangkan sebagai usaha baru bagi warga masyarakat desa ini.
The Characteristics of Mandibular Fracture In Rsup Dr. Hasan Sadikin General Hospital Bandung, Indonesia
Authors: Stevhany Agnesthesia Ruth , Putri Farah Asnely , Priyanto Winarno 
Published: October 2022

Introduction Mandibular fracture poses a fatal complication because the mandible plays an essential role in occlusion and aesthetics. The mandible is one of the bones most affected by facial fractures commonly resulting from trauma to the face and may be associated with severe morbidity and serious consequences
Methods The records of 282 patients referred to RSUP Dr. Hasan Sadikin General Hospital Bandung, Indonesia between January 2017 and January 2021 were analysed retrospectively. Data including age, sex, etiology of mandibular fracture, type of mandibular fracture, and treatment. Incompleted data from the medical record were excluded.
Results Men aged 17-30 years were the most common victims of mandibular fracture. Road traffic accidents (RTAs) were responsible in 84% of cases. The most common anatomic site for mandibular fracture was parasymphysis region 28.7 with simple fractures 79%, and 82% of the total fractures were treated with open reduction
Conclusion The characteristics of mandibular fracture patients describe trauma patterns in the community. This finding is similar with some readily available literature with RTAs was the most common etiology and parasymphysis was the most common fracture site. Reasons for this high frequency may include the large number of poorly maintained, overloaded vehicles on unsuitable roads, violation of traffic regulations particularly by inexperienced young drivers.
Keywords: Fractures, Mandibular, Parasymphisis, Reduction
Olfactory and neurological outcomes of SARS-CoV-2 from acute infection to recovery
Authors: Desai Deesha D. , Yu Sophie E. , Salvatore Brock , Goldberg Zoe , Bowers Eve M. R. , Moore John A. , Phan BaDoi , Lee Stella E. 
Published: October 2022

Educational objectiveTo investigate the impact of SARS-CoV-2 on sinonasal quality of life, olfaction, and cognition at different stages of viral infection and evaluate the association between olfaction and cognition in this population cohort.ObjectivesWhile olfactory dysfunction (OD) is a frequently reported symptom of COVID-19 (98% prevalence), neurocognitive symptoms are becoming more apparent as patients recover from infection. This study aims to address how different stages of infection [active infection (positive PCR test, symptomatic) vs. recovered (7 days post-symptoms)] compared to healthy control patients influence sinonasal quality of life, olfactory function, and cognition.Study designProspective, longitudinal, case-control.MethodsParticipants completed the SNOT-22, University of Pennsylvania Smell Identification Test (UPSIT) and validated cognitive examinations to assess degree of smell loss and neurocognitive function at baseline and at 1 and 3 months for the active group and 3 months for the recovered group. Self-reported olfactory function and overall health metrics were also collected.ResultsThe recovered group had the lowest average UPSIT score of 27.6 compared to 32.7 (active) and 32.6 (healthy control). 80% (n = 24) of the recovered patients and 56.3% (n = 9) of the active patients suffered from smell loss. In follow-up, the active group showed improvement in UPSIT scores while the recovered group scores worsened. In terms of neurocognitive performance, recovered patients had lower processing speed despite an improving UPSIT score.ConclusionSARS-CoV-2 infection was found to impact olfactory function in a delayed fashion with significant impact despite recovery from active infection. Although olfactory function improved, decrements in cognitive processing speed were detected in our cohort.