bluuebunny/crossref_metadata_2025_split huggingface dataset:
Fast Response, High‐Power Tunable Ultrathin Soft Actuator by Functional Piezoelectric Material Composite for Haptic Device Application
Authors: Shouji Yoshinori , Sekine Tomohito , Ito Keita , Ito Naoya , Yasuda Tatsuya , Wang Yi‐Fei , Takeda Yasunori , Kumaki Daisuke , Santos Fabrice Domingues Dos , Miyabo Atsushi , Tokito Shizuo 
Published: January 2023

AbstractRecently, self‐driven soft robotics based on biomimetics, capable of mimicking biological motion, has attracted attention. Soft actuators using intrinsically soft organic materials are expected to be applied to haptic devices, artificial muscles, and micropumps. Ferroelectric polymers can aid in the realization of such soft actuators. However, actuators using such materials encounter problems in terms of the response frequency to an applied voltage. In this study, a soft actuator is fabricated by a printing process using a unique composite material comprising P(VDF‐TrFE), nano‐carbon material (single‐walled carbon nanotubes (SWCNT) and graphene oxide (GO)), and conductive polymer. To characterize the actuator using a minimum substrate thickness of 25 µm, hysteresis curves in the ferroelectric properties and driving characteristics according to the applied frequency are clarified. In addition, the mechanical life of the actuator under continuous voltage sweep is clarified considering it as a mechanical property. Subsequently, a simple haptics system is constructed using the fabricated actuators, and a human‐sensitive actuator demonstration system is constructed wherein the phase of the sweep frequency is variable.
Biodegradable Cellulose Nanocomposite Substrate for Recyclable Flexible Printed Electronics
Authors: Jaiswal Aayush Kumar , Kumar Vinay , Jansson Elina , Huttunen Olli‐Heikki , Yamamoto Akio , Vikman Minna , Khakalo Alexey , Hiltunen Jussi , Behfar Mohammad H. 
Published: January 2023

AbstractPrinted, flexible, and hybrid electronic technologies are advancing rapidly leading to remarkable developments in smart wearables, intelligent textiles, and health monitoring systems. Flexible electronics are typically fabricated on petroleum‐derived polymeric substrates. However, in the light of global environmental concerns regarding fossil raw materials, there is a need to drive the production of flexible electronics devices based on sustainable materials. Additionally, there is a need to reduce the quantity of electronic waste by developing material recovery and recycling technologies. Here, a fully biobased and biodegradable substrate tailored for printed flexible electronic applications is developed. Based on a nanocomposite of cellulose nanofibril (CNF) and hydroxyethyl cellulose (HEC), the substrate shows excellent mechanical and optical properties for printed flexible electronics applications. High‐resolution screen printing of conductive ink and typical electronics assembly processes are possible to realize on the substrate. An electrocardiograph (ECG) device is fabricated on the cellulosic substrate as a technology demonstrator and its performance is confirmed on human volunteers. Last, end‐of‐life scenarios are studied for printed electronic devices where device degradation and subsequent material recovery concepts are presented. This work demonstrates that sustainable plant‐derived materials can play a big role toward a green transition in the electronics industry.
Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors
Authors: Son Jaemin , Shin Yunwoo , Cho Kyoungah , Kim Sangsig 
Published: January 2023

AbstractIn this study, the logic‐in‐memory operations are demonstrated of ternary NAND and NOR logic gates consisting of double‐gated feedback field‐effect transistors. The component transistors reconfigure their operation modes into n‐ or p‐channel modes by adjusting the gate biases. The highly symmetrical operation between these operation modes with an excellent on‐current ratio of 1.03 enables three distinguishable and stable logic levels in the ternary logic gates. Moreover, the ternary logic gates maintain the three logic states for several tens to hundreds of seconds under zero‐bias condition. This study demonstrates that the ternary logic gates are promising candidates for next‐generation low‐power computing systems.
Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication of Transistor Photomemories
Authors: Prakoso Suhendro Purbo , Li Yen‐Ting , Lai Juin‐Yih , Chiu Yu‐Cheng 
Published: January 2023

AbstractFinding the outperforming photoactive charge trapping materials for a new‐trending transistor photomemory application is labor intensive, costly reagents and solvents, and not to mention, inefficient energy and time consumption. In this work, costless organic‐based inks are introduced as a novel photoactive charge storage material that is inspired by high fluorescent ink of cheap invisible pens when exposed to ultraviolet light. The pure powder inks of invisible pens with bright red and greenish‐yellow emission are selected. The estimated usage costs about $0.003 cm−2, confirming its ultralow‐budget material. The pentacene‐based organic field‐effect transistor memory scheme is employed to evaluate the memory behaviors. These invisible‐ink‐based charge storage layers endow a transistor memory device with photoinduced recovery. Interestingly, by conducting the photoassisted operation on the same device, its threshold voltage shifts toward more positive direction, resulting in broaden memory window and faster device operations. On top of that, invisible‐ink‐based transistor photomemory demonstrates the well‐defined and feasible multibit memory cell for the next‐generation storage media. As a result, the employment of commercial invisible inks as a cheapest photoactive charge trapping material can favor the advancement of transistor photomemory devices and related functional applications.
Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed
Authors: Chai Jixing , Liu Qianhu , Chen Liang , Cao Ben , Kong Deqi , Lin Tingjun , Wang Wenliang , Li Guoqiang 
Published: January 2023

AbstractDue to wavelength‐selective characteristics, the InGaN‐based photodetectors show bright prospects in visible light communication and fast imaging system. However, the application of InGaN photodetectors with simple structures is limited in the above field owing to the slow response speed. Herein, an ultrafast photodetector based on axial InN/InGaN nanorod array (NRA) heterojunction is prepared through a self‐catalytic high (930 °C) and low (400 °C) temperature two‐step growth method by molecular beam epitaxy (MBE). The performance of photodetectors is analyzed by semiconductor device analyzer, wavelength response system (consists with a xenon lamp and monochromator), and time response system (combined by an optical chopper, a laser, and a digital oscilloscope). The photodetectors present a fast response speed with a rise/full time of 18.2/24.7 µs. Further analyses reveal a responsivity of 9.27 A W−1 and a specific detectivity of 3.54 × 1010 Jones under −1 V bias. As a result, the axial NRA heterojunction photodetectors exhibit great potential for application in ultrafast photoelectric conversion systems and provide valuable guidance for realizing ultrafast photodetectors.
Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature
Authors: Lan Jun , Li Zhixiong , Chen Zhenjie , Zhu Quanzhou , Wang Wenhui , Zaheer Muhammad , Lu Jiqing , Liang Jinxuan , Shen Mei , Chen Peng , Chen Kai , Zhang Guobiao , Wang Zhongrui , Zhou Feichi , Lin Longyang , Li Yida 
Published: January 2023

AbstractThe search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn‐doped HfOx‐based resistive random‐access memory (HfZnO RRAM), with improved performance. As compared with HfOx RRAM, the HfZnO RRAM exhibits reduced switching voltages (>20%) and switching energy (>3×), as well as better uniformity both in voltages and resistance states. Furthermore, the HfZnO RRAM exhibits stable retention exceeding 10 years, as well as write/erase endurance exceeding 105 cycles. In addition, excellent linearity and repeatability of conductance tuning can be achieved using the constant voltage pulse scheme, achieving ≈90% accuracy in a simulated multi‐layer perceptron network for the recognition of modified national institute of standards and technology database handwriting. The HfZnO RRAM is also characterized down to the temperature of 4 K, showing functionality and the elucidation of its carrier conduction mechanism. Hence, a potential pathway for doped‐RRAM to be used in a wide range of temperatures including quantum computing and deep‐space exploration is shown.
Enabling Internal Electric Fields to Enhance Energy and Environmental Catalysis
Authors: Chen Lei , Ren Jin‐Tao , Yuan Zhong‐Yong 
Published: January 2023

AbstractRecent years have witnessed an upsurge of interest in exploiting advanced photo‐/electrocatalysts for efficient energy conversion and environmental remediation. Constructing internal electric fields has been highlighted as a rising star to help facilitate various catalytic processes, with the merits of promoting charge transfer/separation, optimizing redox potential and creating effective active/adsorption sites. Internal electric fields are usually formed by the polarization of uneven charge distributions between different constituent layers, which widely exist in piezoelectrics, polar surface terminations, and heterostructure materials. Herein, a groundbreaking and interdisciplinary overview of the latest advances in the construction of internal electric fields to improve photo(electro)catalytic and electrocatalytic activity is provided. This critical review begins with an encyclopedic summary of the classification, advantages, and synthesis strategies of internal electric fields. Subsequently, the identification methods are thoroughly discussed based on the characterization techniques, experiments, and theoretical calculations, which can provide profound guidance for the in‐depth study of internal electric fields. To elaborate the theory–structure–activity relationships for internal electric fields, the corresponding reaction mechanisms, modification strategies, and catalytic performance are jointly discussed, along with a discussion of their practical energy and environmental applications. Finally, an insightful analysis of the challenges and future prospects for internal electric field‐based catalysts are discussed.
Quasi‐Decoupled Solid–Liquid Hybrid Electrolyte for Highly Reversible Interfacial Reaction in Aqueous Zinc–Manganese Battery
Authors: Pan Yicai , Liu Zhexuan , Liu Sainan , Qin Lipin , Yang Yongqiang , Zhou Miao , Sun Yanyan , Cao Xinxin , Liang Shuquan , Fang Guozhao 
Published: January 2023

AbstractAqueous zinc–manganese batteries with low cost, reliable safety, and considerable energy density, show promise for grid‐scale storage. Their durable operation is highly dependent on the reversibility and stability of both electrode interfaces, which is limited by the different requirements of the interfaces of manganese‐based cathodes and zinc anodes. Here, a quasi‐decoupled solid–liquid hybrid electrolyte is proposed, which demonstrates good compatibility and high reversibility for both interfaces with different electrolyte environments, showing quasi‐decoupling characteristics. Such a hybrid electrolyte can endow the anode interface with abundant favorable nucleation sites for achieving uniform zinc platting/stripping, as well as limit the presence of free H2O molecules, to suppress side‐reactions. This electrolyte is also adapted to a reversible and stable MnO2/Mn2+ manganese deposition/dissolution reaction at the cathode interface by restricting OH−/H+ ion diffusion, preventing formation of irreversible electrochemically inert MnOOH. As a result, the quasi‐decoupled solid–liquid hybrid electrolyte enables Zn||Zn cycling for more than 500 h, and a specific capacity of a Zn||α‐MnO2 battery up to 348 mAh g−1 at 0.2 A g−1. It also allows 87% capacity retention after 500 cycles at 0.5 A g−1. This work provides a new insight into electrolyte design that focuses on the different requirements of differing electrode interfaces.
Localized Geometry Determined Selectivity of Iodide‐Derived Copper for Electrochemical CO2 Reduction
Authors: Shi Yuchuan , Wang Yiqing , Dong Chung‐Li , Nga Ta Thi Thuy , Wei Daixing , Wang Jialin , Zhao Xiaoli , Wang Miao , Zhang Kaini , Li Mingtao , Dong Fan , Shen Shaohua 
Published: January 2023

AbstractTwo iodide‐derived copper (ID‐Cu) electrocatalysts (E‐ID‐Cu and W‐ID‐Cu) are prepared by electrochemical/wet chemical iodination of Cu foil and subsequent in situ electrochemical reduction reaction. In comparison to electropolished Cu (EP‐Cu), both E‐ID‐Cu and W‐ID‐Cu can produce multicarbon (C2+) products with much‐improved selectivity, with Faradic efficiency (FE) reaching 64.39% for E‐ID‐Cu and 71.16% for W‐ID‐Cu at −1.1 V versus reversible hydrogen electrodes (RHE), which can be attributed to their localized geometry features with high defect density and high surface roughness. Given the well‐determined FEs towards C2+ products, the partial current densities for C2+ production can be estimated to be 251.8 mA cm−2 for E‐ID‐Cu and 290.0 mA cm−2 for W‐ID‐Cu at −1.2 V versus RHE in a flow cell. In situ characterizations and theoretical calculations reveal that the high‐density defects and high surface roughness can promote *CO adsorption by raising the d band center and then facilitate C–C coupling, contributing to the high selectivity of C2+ products for ID‐Cu. Interestingly, the high surface roughness can increase the residence time of *C–H intermediates and decrease the formation energy of the *OCCO and*CH3CH2O intermediates, thus favoring C2+ production, with a unique C2H6 product observed over W‐ID‐Cu with FE of 10.14% at −0.7 V versus RHE.
Recent Advances in Ultrasound and Photoacoustic Analysis for Thyroid Cancer Diagnosis
Authors: Park Byullee , Kim Chulhong , Kim Jeesu 
Published: January 2023

AbstractThyroid cancer is one of the most commonly diagnosed cancers worldwide, with a continuously increasing incidence rate in recent decades. Although ultrasonography, which is the current screening method in clinical workflows, has successfully triaged cancerous nodules for biopsy, overdiagnosis has also grown due to the relatively low specificity of the method. Studies are conducted to overcome this overdiagnosis issue by complementing ultrasonography with additional image‐based analysis techniques. This review presents an overview of the current advances in clinical trials using advanced ultrasound (US) and photoacoustic (PA) imaging techniques for thyroid nodules in humans. A summary of initial trials by Doppler US and US elastography to improve the classification accuracy of thyroid nodules is presented. Furthermore, recent PA techniques with multispectral analyses utilizing clinically available machines are explored. By amending the existing ultrasonography, the advanced US and PA techniques can enhance the triaging accuracy by analyzing both structural and functional information of thyroid nodules in vivo.
An Efficient Design of TaOx‐Based Memristor by Inserting an Ultrathin Al2O3 Layer with High Stability for Neuromorphic Computing and Logic Operation
Authors: Jiang Li , Jin Yaoyao , Zhao Yifan , Meng Jiahao , Zhang Jun , Chen Xin , Wu Xinjiang , Xiao Yongyue , Tao Zipei , Jiang Bei , Wen Xin , Ye Cong 
Published: January 2023

AbstractNew computing‐in‐memory architecture based on memristors can achieve in situ storage and computing of data, which greatly improves the computing efficiency of the hardware system. Here, a reliable bilayer structured TaOx/Al2O3 memristor with a 2 nm Al2O3 insertion layer is demonstrated. This device exhibits stable and gradual switching behavior with a low set/reset voltage (0.61 V/−0.49 V) and multilevel conductance characteristics. It is further indicated that the device has a larger ON/Off ratio (≈148×) and better nonlinearity of conductance modulation by inserting an Al2O3 layer. Various forms of synaptic plasticity are mimicked, such as long‐term potentiation/depression (LTP/LTD), paired‐pulse facilitation (PPF), and spike‐timing‐dependent plasticity (STDP). Based on the quasi‐linear conductance modulation characteristics, excellent classification accuracy (90.4%) is achieved for the applications of handwritten digit recognition. Moreover, the logic operations (intersection, union, and complement) are implemented on a 3 × 5 memristor array, which shows an efficient way to design versatile and reliable devices and provides a novel idea for neuromorphic computing and in‐memory logic operation.
Tuning Local Conductance to Enable Demonstrator Ferroelectric Domain Wall Diodes and Logic Gates
Authors: Suna Ahmet , McCluskey Conor Joseph , Maguire Jesi Rit , Holsgrove Kristina Mary , Kumar Amit , McQuaid Raymond Gerard Peter , Gregg John Marty 
Published: January 2023

AbstractFundamentally, lithium niobate is a good electrical insulator. However, this can change dramatically when 180° domain walls are present, as they are often found to be strongly conducting. Conductivities depend on the inclination angles of walls with respect to the polarization axis and so, if these angles can be altered, then electrical conduction can be tuned, or toggled on and off. In ≈500 nm thick z‐cut ion‐sliced thin films, localized wall angle variations can be controlled by both the sense and magnitude of applied electrical bias. It is shown that this results in diode‐like behaviour, allowing half‐wave rectification at modest frequencies. Importantly, it is experimentally demonstrated that these domain wall diodes can be used to construct “AND” and inclusive “OR” logic gates, where “0” and “1” output states are clearly distinguishable. Extrapolation to more complex arrangements shows that output states can still be distinguished in two‐level cascade logic. Insights show that simple logic circuits can be realized by localized manipulation of domain wall conductivity. Our research complements that by Jie Sun et al. (Adv. Funct. Mater. 2207418 (2022)), where NOT, NOR, and NAND gates are realized by moving conducting domain walls to make or break electrical contacts.
Green synthesis of silver nanoparticles using seagrass Cymodocea serrulata (R.Br.) Asch. & Magnus, characterization, and evaluation of anticancer, antioxidant, and antiglycemic index
Authors: Dilipan Elangovan , Sivaperumal Pitchiah , Kamala Kannan , Ramachandran Marimuthu , Vivekanandhan Perumal 
Published: February 2023

AbstractIn the present study, the green synthesis of silver nanoparticles (AgNPs) using ethanol extract of Cymodocea serrulata and biological activity were investigated by UV‐visible spectrophotometer, Fourier‐transform infrared spectroscopy (FTIR), x‐ray powder diffraction (XRD), and scanning electron microscopy. The results show that nanoparticles synthesized were confirmed by color change from green to dark brown. The XRD analysis confirmed that the AgNPs were crystalline and found that their UV maximum specific absorbance was between 200 and 400 nm, and their field emission scanning electron microscopy size was between 60 and 69 nm. FTIR studies identified different functional groups involved in the potential capping of AgNPs. The antidiabetic activity of the AgNPs was tested by the inhibition of carbohydrate digestive enzymes (a‐glucosidase and amylase). In addition, it has exhibited potential anticancer activity against breast cancer cells (MDF7). Hence, the present result warrants ecofriendly and efficient method in the synthesis of AgNPs, which can act as an alternative biomaterial for biomedical applications.
Mitochondrial protein import machinery conveys stress signals to the cytosol and beyond
Authors: Lionaki Eirini , Gkikas Ilias , Tavernarakis Nektarios 
Published: January 2023

AbstractMitochondria hold diverse and pivotal roles in fundamental processes that govern cell survival, differentiation, and death, in addition to organismal growth, maintenance, and aging. The mitochondrial protein import system is a major contributor to mitochondrial biogenesis and lies at the crossroads between mitochondrial and cellular homeostasis. Recent findings highlight the mitochondrial protein import system as a signaling hub, receiving inputs from other cellular compartments and adjusting its function accordingly. Impairment of protein import, in a physiological, or disease context, elicits adaptive responses inside and outside mitochondria. In this review, we discuss recent developments, relevant to the mechanisms of mitochondrial protein import regulation, with a particular focus on quality control, proteostatic and metabolic cellular responses, triggered upon impairment of mitochondrial protein import.
Neddylation‐CRLs regulate the functions of Treg immune cells
Authors: Wu Di , Sun Yi 
Published: January 2023

AbstractNeddylation, a ubiquitylation‐like post‐translational modification, is catalyzed by a cascade composed of three enzymes: E1 activating enzyme, E2 conjugating enzyme, and E3 ligase with cullins as physiological substrates. Specifically, neddylation E2 UBE2M couples with E3 RBX1 to neddylate cullins 1–4, whereas neddylation E2 UBE2F couples with E3 RBX2/SAG to neddylate cullin 5, leading to activation of CRL1‐4 (Cullin‐RING ligases 1–4) and CRL5, respectively. While over‐activation of the neddylation‐CRLs axis occurs frequently in many human cancers, how neddylation‐CRLs regulate the function of immune cells, particularly Treg cells was previously unknown. To this end, we recently performed Treg selective knockout of two neddylation E2s and two E3s, individually, driven by Foxp3‐Cre, and found that while the Ube2f‐Sag E2/E3 pair plays a minimal role, if any, the Ube2m‐Rbx1 pair is essential for the maintenance of Treg functionality, since their deletion triggers robust inflammatory response with autoimmune phenotypes. Milder phenotype severity upon Treg KO of upstream Ube2m than that of downstream Rbx1 strongly suggested that Rbx1 regulates Treg function in a manner dependent and independent of neddylation.
Glucose assimilation rate determines the partition of flux at pyruvate between lactic acid and ethanol in Saccharomyces cerevisiae
Authors: Lane Stephan , Turner Timothy L. , Jin Yong‐Su 
Published: February 2023

AbstractEngineered Saccharomyces cerevisiae expressing a lactic acid dehydrogenase can metabolize pyruvate into lactic acid. However, three pyruvate decarboxylase (PDC) isozymes drive most carbon flux toward ethanol rather than lactic acid. Deletion of endogenous PDCs will eliminate ethanol production, but the resulting strain suffers from C2 auxotrophy and struggles to complete a fermentation. Engineered yeast assimilating xylose or cellobiose produce lactic acid rather than ethanol as a major product without the deletion of any PDC genes. We report here that sugar flux, but not sensing, contributes to the partition of flux at the pyruvate branch point in S. cerevisiae expressing the Rhizopus oryzae lactic acid dehydrogenase (LdhA). While the membrane glucose sensors Snf3 and Rgt2 did not play any direct role in the option of predominant product, the sugar assimilation rate was strongly correlated to the partition of flux at pyruvate: fast sugar assimilation favors ethanol production while slow sugar assimilation favors lactic acid. Applying this knowledge, we created an engineered yeast capable of simultaneously converting glucose and xylose into lactic acid, increasing lactic acid production to approximately 17 g L−1 from the 12 g L−1 observed during sequential consumption of sugars. This work elucidates the carbon source‐dependent effects on product selection in engineered yeast.