bluuebunny/crossref_metadata_2025_split huggingface dataset:
Working Time Prediction and Workflow Mining at Failure Analysis
Authors: Pagliaro Domenico , Pleschberger Martin , Pfeiler Olivia , Freislich Thomas , Schekotihin Konstantin 
Published: November 2023

Abstract
Failure Analysis (FA) uses combinations of a multitude of methods to identify and localize failures in semiconductor devices. The performance or efficiency of a FA lab is often measured by throughput or the total time needed to complete an analysis. These KPIs (Key Performance Indicators) can be optimized, but sequences of executed methods might be long and, therefore, hard to understand and optimize. Processes executed in an ad hoc manner might block each other causing long queues for specific tools and overloading specialists working with them. These and other factors can lead to a significant decrease in lab performance. In this paper, we propose an approach to analyzing FA processes with a focus on Internal Physical Inspection (IPI) jobs. Specifically, we use machine learning and statistical methods to estimate (a) the workflow that engineers follow while completing IPI jobs and (b) the duration of each operation executed in the workflow. Our approach starts with data extraction and preprocessing, aiming at extracting features characterizing the workflow, like the package or technology of a sample, as well as providing information about the complexity of each task, thus, allowing us to predict their duration. The resulting tool allows lab management and team leads to analyze the execution of IPI jobs and optimize them. Moreover, the information provided by the tool can be used in automated scheduling methods providing recommendations to FA engineers about sequences of jobs improving utilization of the lab’s resources.
Electrical Event Capture with an Electron Beam Probing System
Authors: Leslie Neel , Vickers James , Huening Jennifer J , Tom Tong Xianghong , Pardy Patrick 
Published: November 2023

Abstract
With the introduction of flip-chip technology, optical-based failure analysis techniques have played a critical role in many failure analysis (FA) laboratories. This is due to the unhindered access for photons to probe or emit from the transistor layer through the bulk silicon. Among the optical techniques, laser voltage imaging (LVI) and laser voltage probing (LVP), collectively called LVx, dominate because they directly expose the electrical activity of a given circuit or cell.
In-Situ TEM Observation of Tungsten Migration at Elevated Temperatures
Authors: Cheon Jisung , Park Yangsun , Kim Minsik , Yoo Hyerim , Oh Eunyeong , Lee Sungho 
Published: November 2023

Abstract
The growing demand for flash memory in the artificial intelligence and big data industries has driven the development of Negative AND (NAND) gates. To increase yield and cost competitiveness, NAND has evolved to stack gates vertically, resulting in vertical NAND (VNAND) technology. However, this advancement has led to challenges, such as high aspect ratio-related difficulties and word line (WL) metal Tungsten (W) substitution process defects. In this study, we investigated Voltage Blocking Oxide Barrier (VBB) defects in VNAND cells under high-temperature conditions using in-situ heating TEM. By artificially creating VBB defect environments within VNAND cells and analyzing structural and chemical changes, we identified VBB defects expression phenomenon caused by residual HF(g) in metal voids during post-metal replacement processes. Our findings offer insights into defect-inducing heat treatment conditions affecting VBB in VNAND devices and propose directions for next-generation NAND flash processes.
The Sulfide Contamination Management in Circuit Probing FAB Clean Room Environment
Authors: Tu Kuan-Jui , Su Frank , Hsieh Wen-Fei , Chen Vincent , Lin Henry , Lou Y.S. 
Published: November 2023

Abstract
Sulfur corrodes silver metal in a continuous reaction. This corrosion is also found in semiconductor industry processes for the application of silver into Backside Grinding & Backside Metal (BGBM). In this paper two experiments were conducted for the sulfide corrosion behavior in a Circuit Probing (CP) clean room environment. They were Mixed Flowing Gas (MFG) and clean room environment exposure test. The MFG test of this research was conducted in a testing chamber with temperature, relative humidity, and concentration of H2S were carefully controlled and monitored. The MFG test conditions included the test temperature of 25°C, relative humidity of 75 %, and H2S gas concentration of 10 ppb. And the MFG tests lasted for over 72 hours. The X-ray photoelectron spectroscopy (XPS) was used to analyze the elements composition and Ag2S film thickness of the MFG test samples. The second test of this research was the direct exposure experiment. The silicon samples deposited with appropriate silver layer thickness were exposed in CP fab clean room environment with H2S concentration well monitored. The XPS analysis results of the corresponding exposure test samples indicated that the Ag2S contamination would continue to develop and wouldn't saturate. This would be indicative for the management of Ag2S contamination control. The results of MFG and Exposure test were help for Ardentec to setup Ag2S corrosion methodology. All the managements were applied into daily operation of the BGBM semiconductor products.
Advanced Axis Correction for Automated Workflow of Vertical Scanning Electron Microscopy Applications
Authors: Lee Jooeun , Jun Kwon Woo , Chang Choi In , Kang Christopher H. 
Published: November 2023

Abstract
Scanning Electron Microscope (SEM) is a valuable tool for measuring Critical Dimensions (CD) of semiconductor devices at the nanometer scale. Vertical SEM application is one of the applications for high accurate CD measurement on cross-sectional surface. Even a slight stage tilt angle change of the vertical sample can impact CD values in nanometer scales of the sample surface features. For accurate CD measurements, it is essential to ensure the sample is positioned correctly to acquire the sample image. However, it is challenging to achieve a perfect alignment with the incident beam direction and the accurate perpendicular direction on the cross-sectional surface on SEM tool. To achieve an ideal vertical positioning of the sample, the combination of the stage tilt axis and stage rotation axis can be used. Exact calculation is required to achieve an accurate CD measurement. In this paper, a calculation method of the tilt angle correction to achieve a perpendicular angle to the surface and its verification method are described. Reliable measurement can be achieved by employing an automated script for compensation. We also demonstrate an approach for highly reliable angle correction and improved metrology results in this paper.
Fractographic Case Studies of Thinning Related Fracture-Patterns in Silicon Chips
Authors: Maynollo Josef 
Published: November 2023

Abstract
The development of modern power semiconductors requires the reduction of the resistance in the on-state of the device. One way to accomplish this is to reduce the bulk silicon thickness. To reach low final Si thicknesses, the grinding processes have to be adapted and optimized and new process-flows, such as dicing before grinding (DBG), must be employed.
Femtosecond Laser Tool for Characterization of Advanced Packages
Authors: Weppelman I.G.C. , Coyle S.T. 
Published: November 2023

Abstract
We introduce a laser tool for producing cross-sectional and block cuts of cubic millimeter dimensions in advanced packages and other samples. PolarisTM is an alternative to mechanical polishing and can create samples of arbitrary shapes including block cut-outs and window cuts. The tool uses a femtosecond laser for ablation to reduce thermal effects on the sample. To further control the sample temperature, the tool can also cut samples that are submerged in water. We show results cutting in advanced packages with minimal damage at high speed, typically greater than 1 mm3/min.
Proposal of Tilt-Axis Adjustment in V-NAND Plan-View without Si Substrate Using Automated Metrology of Transmission Electron Microscope
Authors: Kim Dong-yeob , Kim Su-yeon , Kwon Woo-jun , Kim Min-kook , Kang Christopher H. 
Published: November 2023

Abstract
In this paper, we propose a method to get more accurate metrology data using the tilt-axis on a transmission electron microscope (TEM) to compensate for microscopic tilt-axis changes that occur during focused ion beam (FIB) sample preparation processing. This method was developed using V-NAND plan-view samples which require channel hole measurements for each layer to support process monitoring. To test this method, we obtained the same image by progressively tilting the alpha and beta axes one degree in the positive and negative direction using a V-NAND planar sample. The strongest contrast edge was found by contrast profile analysis of each edge of the V-NAND channel using automated software. Through this method, we were able to optimize the sample position and automate the process to capture high quality images to accurately measure V-NAND channel holes. The details are discussed in this paper.
In-Situ Orthogonal TEM Lamella Conversion for Catching Subtle Defects in 3D Transistors of Microprocessor Devices
Authors: Zudhistira Dionaldo , Mun-Yee Ho , Narang Vinod 
Published: November 2023

Abstract
Miniaturization of today’s semiconductor devices and increased complexity of transistor architecture have resulted in gradually shrinking defect sizes. A direct consequence to this is the diminished chance of catching defects in the Transmission Electron Microscope (TEM) on the initial lamella, prompting the need to convert the TEM lamellas to analyze them from a different angle. In this work, a reliable step-by-step procedure to perform in-situ TEM lamella conversion is detailed. The applicability of the method is successfully validated on defective sub-20nm FinFET samples. Two different initial lamella types –planar and cross-sectional – are featured in the case studies to demonstrate the method’s versatility.
FIB-SEM Tomography Acquisition and Data Processing Optimization for Logic and Memory Structures
Authors: Stegmann Heiko , Laquerre Alexandre 
Published: November 2023

Abstract
Focused-Ion Beam Scanning Electron Microscopy (FIB-SEM) tomography is a high resolution three-dimensional (3D) imaging method with applications in failure analysis and metrology of semiconductor devices. For the smallest logic and memory structures currently in use, it requires single-digit nanometer 3D resolution. In this resolution range, avoiding distortion artifacts in the data becomes crucial. We present examples and discuss ways to reduce the likelihood of such artifacts during the data acquisition, as well as how to mitigate them in post-processing, and therefore increase the data quality.
Detecting Wafer Level Cu Pillar Defects Using Advanced 3D X-ray Microscopy (XRM) with Submicron Resolution
Authors: Li Susan , Frame John , Madriaga-Berry Edita , Hulog Jose , Zhang Ming , Terada Masako , Gu Allen , Taraci David 
Published: November 2023

Abstract
In this work we present a new defect localization capability on Wafer Level Chip Scale Packages (WLCSP) with small-scale Cu pillars using advanced 3D X-ray microscopy (XRM). In comparison to conventional microcomputed tomography (Micro-CT or microCT) flat-panel technology, the synchrotron-based optically enhanced 3D X-ray microscopy can detect very small defects with submicron resolutions. Two case studies on actual failures (one from the assembly process and one from reliability testing) will be discussed to demonstrate this powerful defect localization technique. Using the tool has helped speed up the failure analysis (FA) process by locating the defects non-destructively in a matter of hours instead of days or weeks as needed with destructive physical failure analysis.
Nondestructive Package Level Fault Isolation of Multichip Power Module
Authors: Low Pui Leng 
Published: November 2023

Abstract
Government regulations focused on reducing carbon footprint are driving the widespread adoption of cleaner and more energy-efficient electric vehicles (EV/HEV). As electric vehicles continue to be adopted widely, the power electronics market has experienced tremendous growth. To achieve better thermal, electrical, and lifetime reliability, novel processes and advanced materials are frequently assessed, incorporating high temperature/pressure conditions. Given the high safety requirements for vehicles, a reliable power electronics construction is critical. The generic trend in power electronics prompts the evaluation of a robust non-destructive failure analysis technique at the component-level. Scanning acoustic tomography (SAT) stands out as one of the most effective nondestructive tools for conducting failure analysis of the semiconductors. This technique proves valuable for visualizing defect characteristics, including their morphology, location, and size distribution prior to any destructive physical testing. Furthermore, SAT also exhibits a remarkable capability to detect delamination at sub-micron levels. In this paper, one of the most prominent methods of SAT, the “Tomographic Acoustic Micro Imaging” (TAMI) is capable to inspect the sample subsurface layer by layer simultaneously with an excellent penetration of the ultrasonic waves while scanning the material surface. The objective of current work is to detect the defect and localize the defect, nondestructively. The choice of methodologies, such as the structure of device under test, transducer selection and gate setting will be elaborated further in further sections.
Discoloration: A Case of Mistaken Identity Callout for Reliability Stressed Palladium Coated Copper (PCC) Wires After Mold Compound Removal
Authors: Yabut Brian , Balabbo Rona , Masiris Mac 
Published: November 2023

Abstract
A reliable wire bond connection for integrated circuit devices is an important gauge in assuring a high-quality product. In comparison to pure copper wires, which are used for low-cost assembly but have oxidation problems, Palladium Coated Copper (PCC) bond wires were used to increase wire robustness, provide an advantage in applications at high temperatures, and meet criteria for good loop stiffness and hardness. However, decapsulated samples have been rejected by reliability engineering, and rework has been needed because wire discoloration was mistakenly identified as oxidized bond wires creating delays in producing the Failure Analysis (FA) result as well as wasting unnecessary resources in the process. The wrong callout happens 47.8% of the time. Through the investigation of chemical compositions, the topography of materials, and the evaluation of bond strength distribution, with some use of statistical analysis tools, this study explains how the issue was resolved. As a consequence, the wrong callout was effectively eliminated.
Identifying Electrically Active Dislocations in GaN and the Challenge of Cross-Correlative Physical Characterization
Authors: Scales Z. F. , Koller C. , Schoemann S. , Nelhiebel M. , Reisinger M. , Jatzkowski J. , Diehle P. , Stoeger-Pollach M. 
Published: November 2023

Abstract
Threading dislocations are a feature of all current GaN-based power devices and are speculated to impact their performance and reliability. The aim of this study is to cross-correlate electrical and physical characterization of dislocations using electron beam induced current (EBIC), electron channeling contrast imaging (ECCI), and transmission electron microscopy (TEM) analysis techniques. Sample preparation steps such as deposition and etching of markers via focused electron beam (FEB) and focused ion beam (FIB) turned out to be decisive for successful characterization. We describe in detail various approaches required for successful cross-correlation and present appropriate workflows.
Combining Three-Dimensional FIB-SEM Imaging and EBIC to Characterize Power Semiconductor Junctions
Authors: Stegmann Heiko , Johnson Greg , Rummel Andreas 
Published: November 2023

Abstract
Insulated Gate Bipolar Transistors (IGBT) and silicon carbide (SiC) based MOSFETs have become the predominantly used power semiconductors in particular in automotive applications. For failure analysis of such devices, site-specific access to subsurface fault sites is required, as is understanding their construction and junction profiles, and how the device turns on. We have applied focused ion beam-scanning electron microscopy (FIB-SEM) tomography to visualize inner structure and dopant distributions of an IGBT and of a SiC MOSFET in three dimensions (3D). Such 3D data can be used to complement 2D electron beam induced current (EBIC) measurements obtained at site-specific FIB cross-sections in these devices.
Top-Down Microelectronic Device Delayering Work Flow: Nanometer-Scale Uniformity Over a Millimeter-Scale Area
Authors: Nowakowski P. , Liu J. , Bonifacio C. , Li R. , Ray M. , Fischione P. 
Published: November 2023

Abstract
The ability to precisely remove the internal structures of a semiconductor device, layer-by-layer, is a necessity for semiconductor research and failure analysis investigation. Currently, numerous techniques are used, such as mechanical polishing, chemical etching, and gas assisted plasma focused ion beam (FIB) milling. However, all of these techniques have limitations in that they are unable to: (1) delayer a millimeter-scale area with nanometer-scale uniformity, (2) rapidly remove thick (&gt;300 nm) device layers, or (3) perform automatic and accurate end pointing, which is challenging on thin (≤300 nm) device layers.
PENGARUH SELF EFFICACY, PARTISIPASI ANGGARAN, PENEKANAN ANGGARAN, ASIMETRI INFORMASI TERHADAP BUDGETARY SLACK
Authors: Pratiwi Galuh Asri , Muslichah Muslichah 
Published: November 2023

Individual participation in the company's budgeting process can trigger the emergence of dysfunctional behavior in the form of the individual's tendency to commit budgetary slack.. The purpose of this research is to analyze the effect of self-efficacy, budgetary participation, budgetary emphasis, and information asymmetry on budgetary slack. This research adopts a quantitative approach, utilizing a survey methodology with a structured questionnaire. The analysis method includes descriptive statistics and assessments of data quality and multiple linear regression analysis. The study population and sample consist of 34 employees with structural positions involved in the budget preparation process at the Probolinggo Regency Disaster Management Agency. The findings reveal a negative correlation between self-efficacy and budgetary slack. Moreover, budget participation exhibits a positive influence on budgetary slack, along with budget emphasis. Additionally, information asymmetry is found to have a positive impact on the occurrence of budgetary slack.
Keywords: Efficacy, Participation, Emphasis, Asymetric, Slack
Evaluation of Sensitivity and Specificity of Third and Fourth Generation ELISA in detecting Hepatitis B Virus among Blood Donors
Authors: Shreya P Desai  
Published: November 2023

<p><strong>Aim</strong></p>
<p>To compare the 4th generation ELISA with 3rd generation ELISA for early detection of HBV infection among voluntary blood donors and for specificity.</p>
<p><strong>Material and methods</strong></p>
<p>779 samples of voluntary blood donors were tested for HBsAg by 3<sup>rd</sup> generation ELISA and 4<sup>th</sup> generation ELISA.</p>
<p>The results were compared and discrepant samples were further tested by NAT (RT-PCR) and HBe antigen and HBc antibody by CMIA.</p>
<p><strong>Results</strong></p>
<p>279 were found HBsAg reactive and 500 samples were found non-reactive by third generation ELISA.</p>
<p><strong>Out of these 279 we found 3 samples to be non-reactive by fourth generation ELISA</strong>.</p>
<p>Discrepant samples were then tested for NAT which also gave comparative results with fourth generation ELISA. Two samples were further tested for marker study. Marker study also showed that these two samples were negative for HBV infection.</p>
<p><strong>Conclusions</strong></p>
<ul>
<li>The results of 4th generation ELISA, NAT and HBV markers were found comparable in our prospective study</li>
<li>We had 3 false positives with III generation</li>
<li>Thus 4<sup>th</sup> generation kit for HBsAg is more specific than 3<sup>rd</sup> generation ELISA and comparable with better method like NAT.</li>
<li>In India where NAT testing is costly and not mandatory, 4<sup>th</sup> generation ELISA can be preferred as it is will decrease false positive and rejection of donors</li>
</ul>
Peningkatan Kinerja Karyawan; Ditinjau dari Motivasi Kerja
Authors: Utami Vivi Mega , Manafe Leonard Adrie , Wulansari Dhyah 
Published: November 2023

Tujuan dari penelitian ini yaitu untuk mendeskripsi dan analisa yang berkaitan dengan motivasi kerja di PT. Krisantium Offset Printing dalam meningkatkan kinerja karyawan. Metodologi yang digunakan dalam penelitian ini dengan cara pendekatan kualitatif. Teknik pengumpulan data dilakukan melalui wawancara dengan informan dan temuan penelitian di lapangan. Informan penelitian ini dilakukan secara random yaitu delapan orang perwakilan karyawan yang mampu memberikan penjelasan terhadap topik penelitian. Perusahaan memberikan dorongan secara internal seperti memberikan upah, tambahan uang lembur, dan jaminan kesehatan maupun ketenagakerjaan, dan dorongan secara eksternal seperti menambah wawasan karyawan dengan mengikuti workshop yang sesuai dengan skills karyawan tersebut. Setelah melakukan pengumpulan data dapat disimpulkan bahwa motivasi kerja yang kurang sehingga perlu di perbaiki lagi. Kurangnya rasa tanggung jawab yang dihadapi oleh perusahaan ini dan kurangnya motivasi yang diberikan pemimpin perusahaan, Pemimpin dituntut untuk mengatasi masalah ini tanpa adanya jalan keluar dari perusahaan.Karena kurangnya motivasi tersebut menjadikan salah satu faktor karyawan mempengaruhi kinerja karyawan.
Performance of Row Spacing on the Yield of Sesame Varieties
Authors: Khan Mohammad Ayub Hossain , Islam Maminul 
Published: November 2023

The experiment was carried out during kharif-I season of 2020 in the experimental field of Regional Agricultural Research Station (RARS), Bangladesh Agricultural Research Institute (BARI), Cumilla to evaluate the optimum plant spacing of sesame varieties. There were four plants spacing S1 (30 ××5 cm2), S2 (30×× 10 cm2), S3 (40 ××5 cm2) and S4 (40×× 10 cm2) and two sesame varieties of V1 (BARI Til 3) and V2 (BARI Til 4) were included in the experiment. The experiment was conducted using a split-plot design with three replications. The highest seed yield (1646 kg ha-1) was found from BARI Til 4 but the highest number of capsule plant-1 and number of branches plant-1 were obtained from BARI Til-3. The maximum seed yield (1913 kg ha-1) was achieved in the interaction of S4V2 (40 ××10 cm2 and BARI Til 4) that was identical to S2V2 (30 x 10 cm2 and BARI Til 4).
Bangladesh Agron. J. 2023, 26(1): 28-31
Notes on an old problem of Hungarian historical vocalism: the sporadic (?) change of Uralic *u > Hungarian a, á
Authors: Holopainen Sampsa 
Published: November 2023

This article discusses the alleged sound change Proto-Uralic *u > Hungarian a, á. The etymologies manifesting this change that have been presented in earlier etymological literature are critically examined, and it is shown that a significant portion of them are wrong or based on outdated reconstructions. New explanations for many etymologies are presented, and possible causes for the few convincing examples of *u > a are discussed.