bluuebunny/crossref_metadata_2025_split huggingface dataset:
Application of AES micro‐analysis to interface characterization in TiSi diffusion couples: 2—Influence of oxygen
Authors: Quenisset C. , Naslain R. , Demoncy P. 
Published: May 2005

AbstractThe diffusion of both silicon and oxygen in TiSi couples annealed at 600–700°C under low (pO2 = 10−4 Torr) or high (i.e. in air) oxygen pressures has been studied by AES depth profiling. The AES quantitative analysis of titanium and oxygen was based on the computation of the peak height to background ratios vs. concentration curves for the Ti‐L3M23M23; Ti‐Li3M23M45 and O‐KL2L3 peaks. The element analysis was correlated with the peak shape and EELS spectra.The diffusion of oxygen from the free surface of the sample within the titanium film slows down and eventually stops the extension of the titanium silicide layer formed by diffusion of silicon from the wafer. The former results in the formation of titanium oxides (i.e. TiO, Ti2O3, or TiO2) and the latter in that of titanium silicides (mainly Ti5Si3, and TiSi2). For long enough diffusion times, the main silicide in the diffusion zone is TiSi2 and its growth rejects oxygen in the titanium‐rich part of the couple. Therefore, the TiSi2/Si interface is almost free of oxygen.
The oxidation of zirconium as observed by Auger electron spectroscopy: A comparison of experiment and density of state calculations
Authors: Jungblut B. , Sicking G. , Papachristos T. 
Published: May 2005

AbstractSeveral investigators found by using standard AES equipment that the peak‐to‐peak heights of the Zr signals in the energy range between 80 eV and 170 eV vary in an unusual way after exposure of the sample to oxygen.1–7 Normally the decrease of the Auger signal intensity is more pronounced for the metal signals of lower energy in comparison to those of higher energy. In contrast, in the case of Zr, an oxygen exposure leads to a strongly weakened 144 eV peak, whereas the signals in the energy range between 80 eV and 125 eV remain relatively unaffected.In order to study this phenomenon, a series of high resolution spectra on Zr and ZrOx specimens was taken. The corresponding data sets were processed by applying algorithms for background correction, smoothing, and deconvolution resulting in AES spectra, which are almost free from experimental broadening and loss process artifacts. As a result of this procedure, it becomes apparent that with increasing oxygen content an additional peak gradually appears 7 eV below the 144 eV Zr signal, whereas the signals between 80 eV and 125 eV show minor line shape effects. This new marked Auger transition can be explained by the formation of an oxygen 2p band which enables cross transitions and interatomic transitions to take place. This is confirmed by the density of state calculation performed for tetragonal ZrO2,8 which reveals a O 2p band in the energy range from −4 eV to −8 eV below the Fermi level. Differentiated spectra of lower resolution, such as used for routine analysis, do not resolve these two signals and therefore show a broad peak of comparatively low intensity at 144 eV.
Characteristics of a conversion coating on aluminium
Authors: Crompton J. S. , Andrews P. R. , McAlpine E. 
Published: May 2005

AbstractA study has been made of the film formed on an AlMgSi alloy by a chromate/phosphate solution. Transmission electron microscopy has been conducted to provide high resolution structural and elemental information about the film. The results show that the chemical species present in the film are similar to those reported for other systems. Structural analyses showed that the film may be composed of both particulate and non‐particulate regions. Small particles based primarily on chromium have been observed throughout the film thickness. Large particles at discrete locations along the film–metal interface are based on complex mixtures of chromium and aluminium. Complementary, x‐ray photoelectron spectroscopy has been used in conjunction with ion‐beam etching to provide chemical analysis through the film thickness.
An x‐ray photoelectron spectroscopic study of some chromium–oxygen systems
Authors: Desimoni E. , Malitesta C. , Zambonin P. G. , Rivière J. C. 
Published: May 2005

AbstractA series of pure and mixed chromium standards has been analysed by x‐ray photoelectron spectroscopy in order to obtain a sufficiently homogeneous and self‐consistent set of spectral parameters to be used in the resolution of complex spectra. Additional information was obtained about the stability of the various species under Ar ion bombardment. The results relevant to potassium chromate and dichromate, chromous acid, chromium (III) oxide, hydroxide and nitrate are described and compared critically with those in the published literature.
On the silicon dioxide/polycrystalline silicon interface width measurement
Authors: Queirolo G. , Manzini S. , Meda L. , Anderle M. , Canteri R. , Armigliato A. , Frabboni S. 
Published: May 2005

AbstractThe apparent width of the SiO2Si interface was evaluated with Auger electron spectrometry, secondary ions mass spectrometry and transmission electron microscopy for thin silicon dioxide films grown at temperature ranging from 900 to 1100°C, both on single‐ and poly‐crystalline silicon (polysilicon), with the aim of finding the meaning of this kind of measurement for this particular system. The width of the transition between SiO2and polysilicon was found to depend on both the oxidation temperature and polysilicon doping method, being lower for ion implanted than for gas phase (POCl3) doped samples and for oxides grown at higher temperature. The possible causes for the differences in the interface width are discussed and attributed, in the present case, to the oxide thickness non‐uniformity. This is due, in turn, to the lower oxide growth rate, particularly for the lower oxidation temperature, on the silicon grains protruding out of the surface.
New approach for correction of distortions in spectral line profiles in Auger electron spectroscopy
Authors: Sasse A. G. B. M. , Wormeester H. , Van Silfhout A. 
Published: May 2005

AbstractA new deconvolution method for Auger electron spectroscopy is presented. This method is based on a non‐linear least squares minimizing routine (Levenberg–Marquardt) and global approximation using splines, solving many of the drawbacks inherent to the Van Cittert and Fourier transform based deconvolution methods. The deconvolution routine can be run on a personal computer. The application of this method goes beyond the electron spectroscopies and can be considered as a general deconvolution method.
Depth analysis of metal coatings by glow discharge spectrometry with an argon—helium gas mixture
Authors: Teo W. B. , Hirokawa K. 
Published: May 2005

AbstractDepth profiles of Cu/Ni, Zn/Fe and Ni/Fe metal coatings obtained with a Grimm glow discharge lamp using an argon—helium gas mixture and pure argon gas were compared. Copper and zinc showed a large increase in intensity for the argon‐helium gas mixture, but Ni showed a small decrease. The sputter time for all three coating metals almost doubled, indicating a smaller sputtering rate for the argon—helium gas mixture. A broadened interface due to the different manner in which the surface was eroded was also observed for the argon—helium sputtered profiles. Intensity enhancement in Cu and Zn was explained by the higher excitation and ionization potential of helium and the simple energy levels (simple spectra) of these elements. On the other hand, the dense energy levels of the Ni atom (complex spectra) does not lead to intensity enhancement.
Surfaces of carbon fibres characterized by inverse gas chromatography
Authors: Grenier‐Loustalot Marie‐Florence , Borthomieu Yannick , Grenier Philippe 
Published: May 2005

AbstractThe surface properties of oxidized and sized (epoxy and epoxy‐polyester) carbon fibres have been determined with inverse phase gas chromatography. Using a column developed in the laboratory we have shown that it is possible to use non‐aggressive solvents (alkanes, alcohols, aromatic derivatives and water) for a highly detailed differentiation of sizing and of the treatments undergone by the fibre by the use of partition coefficient (K°) values (at a given temperature), excess enthalpy values of the mixture and excess entropy values.We propose a classification of fibres according to their degree of sizing and treatment.
Surface oxides of boron and B12O2as determined by XPS
Authors: Moddeman W. E. , Burke A. R. , Bowling W. C. , Foose D. S. 
Published: May 2005

AbstractMound Laboratoires has been investigating pyrotechnic materials for several years. Prior studies on the mechanism of ignition have been performed on Ti/KCIO4and Ti/2B mixtures. These studies have shown the importance of the surface oxides of these materials in determining the mechanism of ignition. In the present study, XPS spectra of fused metal, oxidized fused boron and boron metal powder have been recorded. The spectra are interpeted by including the presence of a continuous boron suboxide layer. The results presented here are different from those previosuly reported, which suggests that the formation of boron oxide occurs in islets. The predominant suboxide will be shown to be BxOy, wherex/y= 3. This oxide was found to be present independent of the degree of oxidation. Including this oxide in thickness calculations shows the oxidation of powders to be five layers or so thick, and also aids in understanding Ti/2B ignition.
Quantitative determination of alkaline sizes on paper surfaces by ESCA part I. HABI [N,N,O‐tris(octadecylcarbamoyl)hydroxylamine]
Authors: Brinen J. S. , Calbick J. C. , Cody R. D. 
Published: May 2005

AbstractESCA has been used to monitor the presence of HABI, an experimental alkaline size, on a paper surface at levels normally used in commercial application. A linear relationship between the amount of HABI [N,N,O‐tris(octadecylcarbamoyl)hydroxylamine] applied and the amount detected by ESCA was found, suggesting ‘islanding’ of the sizing agent. Extraction experiments show that HABI is not chemically bound to the paper surface.
Measurement of narrow Si dopant distributions in GaAs by SIMS
Authors: Clegg J. B. , Beall R. B. 
Published: May 2005

AbstractThere is a developing interest in the use of atomic plane or δ‐doping to produce narrow dopant spikes in molecular beam epitaxy GaAs. It is of importance to measure the dopant profile and to determine the growth conditions that minimize dopant spreading. We have used SIMS with low‐energy oxygen bombardment to study the incorporation of silicon in such layers. To aid the optimization of the SIMS depth resolution, a special δ‐doped layered structure has been produced by growth at 400°C. A critical evaluation of the SIMS data for these spikes shows that the profiles are broadened entirely by sputter‐induced relocation effects rather than by thermal diffusion processes. The form of these δ‐spike profiles therefore represents the SIMS resolution function with our specific experimental conditions. The absolute depth resolution (ΔZ) is found to be essentially constant for eroded depths up to ∼500 nm. With the lowest probe energy (0.7 keV per atom), giving a ΔZ of 2.7 nm, at least 68% of the Si is contained within nine atomic planes. Using appropriate sample handling, a detection limit of 1 × 1016 cm−3 Si is obtained after the erosion of only ∼ 15 nm. Analysis of structures grown at normal molecular beam epitaxy temperatures indicates that significant dopant spreading takes place during growth. It is shown that a knowledge of the resolution function enables the inherent SIMS broadening errors to be removed from these measurements. Thus, when the layer growth time is deliberately increased, the Si migrational process is dominated by Fickian diffusion, with the diffusion coefficient being equal to 3.8 × 10−17 cm2 s−1 at 553°C.
Photoelectron diffraction and surface crystallography
Authors: Grenet G. , Jugnet Y. , Homberg S. , Poon H. C. , Duc Tran Minh 
Published: May 2005

AbstractWe report here the state of development of photoemission diffraction from core levels as a tool for the investigation of surfaces. Experimental procedures for performing reproducible and accurate photoemission diffraction curves are formulated. To this end, the merit and the limitations in the choice of different parameters, such as photoelectron kinetic energy or detection angles, are discussed in view of various applications. The discussion is largely exemplified from our experiences, as well as from those in the literature.
Regularization: A stable and accurate method for generating depth profiles from angle‐dependent XPS data
Authors: Tyler B. J. , Castner D. G. , Ratner B. D. 
Published: May 2005

AbstractAn algorithm for generating depth profiles from angle‐dependent XPS data has been developed. The algorithm uses the regularization method with non‐negativity constraints. Four criteria for determining the optimal amount of solution smoothing have been investigated. A criterion that uses the least‐squared error in the regenerated data set proved most effective for selecting the optimal smoothing. Simulated data for a two‐layer sample were used to investigate the effects of the number of data points, where each data point consisted of the spectra acquired at a take‐off angle. Simulated data were also used to investigate the effect of random error on the calculated depth profiles. Increasing the number of data points improved the resolution at the interface. Greater than 10% error could be added to the data without affecting the stability of the algorithm. The algorithm has also been tested on actual angle‐dependent XPS data sets from a thin polyurethane film on gold, a thin silicon oxide film on silicon, and a thick polyetherurethane film on glass. Performance of the regularization algorithm has been compared to an algorithm that uses a singular value decomposition of angle‐dependent XPS data to generate depth profiles. The regularization algorithm demonstrates significantly improved stability and accuracy with roughly equal computational difficulty. Using the regularization algorithm, a quantitative estimate of the depth profile in the upper 100 Å region of a sample can be calculated using data with > 10% error and using as few as three data points.
Improvement of crater‐edge profiling for the characterization of superlattice structures
Authors: Sobue S. , Tanemura M. , Okuyama F. 
Published: May 2005

AbstractAn Auger crater‐edge technique is proposed to measure the interfacial sharpness in superlattices grown by molecular beam epitaxy. The basis of the technique was to linearly raster the primary Xe+ ion beam to form a crater with elongated edges. The SEM images of the crater walls so produced on Al0.25Ga0.75As/GaAs samples resembled closely the X‐TEM images of the superlattice, thus allowing one to determine the lateral and vertical inhomogeneities in layer stacking. The ion beam was then rastered in a zigzag pattern at lower beam energy, exposing the superlattice layers with better‐resolved interfaces, which gave rise to line profiles as low as 30 Å in apparent depth resolution. This may assure that the technique can compete with X‐TEM, with respect to the superlattice characterization in non‐atomic dimensions.
XPS studies of the fluoride ion‐selective electrode membrane LaF3: Ion interferences
Authors: De Marco R. , Cattrall R. W. , Liesegang J. , Nyberg G. L. , Hamilton I. C. 
Published: May 2005

AbstractXPS has been used to investigate ion‐exchange processes occurring at the surface of the fluoride ion‐selective electrode membrane. It is shown that ion exchange occurs to a depth much greater than that of the outermost solid surface monolayer. The effect of hydroxide ion interference on the response of the electrode has been studied, and a mechanism for its action is proposed. Studies of electrode membranes exposed to carbonate and phosphate ions show that interferences on the response of the electrode cannot be interpreted by solubility product considerations alone.
Evidence for surface titanium hydride on activated TiFe by hydrogen‐induced AES line‐shape effects
Authors: Jungblut B. , Sicking G. 
Published: May 2005

AbstractThe surface segregational processes taking place during the activation of the hydrogen storage material TiFe were studied by Auger electron spectroscopy (AES). In situ treatment of TiFe with 2 × 10−5 mbar hydrogen at 870 K results in the formation of an overlayer, with Ti as the only metallic component. To understand the catalytic mechanism of the hydrogen uptake it is of major importance to gain knowledge about the chemical state of this Ti overlayer. Recent work demonstrates that, in the case of Ti, it is possible to identify not only titanium oxides but also titanium hydrides by line‐shape effects, which act on the Ti L3M23V Auger signal. By comparison with Ti reference spectra measured before and after gas exposure, it becomes clear that the overlayer consists of titanium hydride. In order to emphasize the line‐shape effects, deconvolved spectra are shown. Since Fe was not detectable on the surface of the material after hydrogen treatment, it is concluded that the titanium hydride must catalyse the hydrogen uptake of activated TiFe.
New developments in surface characterization techniques for the semiconductor industry
Authors: Shaffner T. J. 
Published: May 2005

AbstractDevelopment of diagnostic techniques in the semiconductor industry continues to be measured against requirements for increased material purity and smaller device dimension. Progressive shrinking of very‐large‐scale integrated circuits into the submicron regime and the emergence of quantum structures on the nanometer scale now require accurate and timely analyses of killing defects, which can be an order of magnitude smaller than minimum geometry.The approach of this article is to review new characterization technique developments which typify our search for an optimum compromise between x–y spatial resolution, depth of analysis and sensitivity of trace metals and dopants. Orders‐of‐magnitude improvement in detectability have been achieved using accelerator mass spectrometry (AMS), laser‐assisted SIMS and Fourier transform photoluminescence. Defects normally elusive at the partsper‐billion atomic level have been studied with sensitive spectroscopies based on positron annihilation and thermal desorption. Deconvolution of high‐resolution x‐ray rocking curves offers capability for in‐depth strain profiling of boron implants. Applications of high‐resolution electron microscopy to heteroepitaxial GaAs on Si and scanning tunneling microscopy to routine grain size measurement are also discussed. Ballistic electron microscopy holds promise as an important new tool for non‐destructive probing on a nanometer scale of the electrical properties of subsurface Schottky interfaces. Statistics are presented in context of the severe sampling problem which inevitably accompanies trace element analysis and single‐atom detection.
Surface kinetic aspects of Si incorporation in molecular beam epitaxial growth of GaAs
Authors: Lee B. , Szafranek I. , Stillman G. E. , Arai K. , Nashimoto Y. , Shimizu K. , Iwata N. , Sakuma I. 
Published: May 2005

AbstractThe incorporation and amphoteric behavior of Si impurities in Si‐doped (100) oriented molecular beam epitaxial (MBE) GaAs layers grown under different As4/Ga flux ratios but with a fixed Si flux have been studied using Hall effect measurements, photothermal ionization spectroscopy and photoluminescence. The Si donor concentration increases substantially with increasing As4/Ga flux ratio, while the Si acceptor concentration remains less than ∼ 1013 cm−3, regardless of the variation of As4/Ga flux ratio. The observed increase of carrier concentration with increasing V/III ratio is not due to a change of site preference of Si impurities from Ga to As sublattice sites as previously supposed, but is due to the increase in incorporation of Si donor. This result can be explained by the kinetic effects associated with surface reaction processes involved in Si impurity incorporation. From these results it is clear that the sticking coefficient of Si is less than unity, and varies with the growth conditions.
Auger electron spectroscopy from elemental standards. II. Peak height and area
Authors: Batchelor D. R. , Bishop H. E. , Venables J. A. 
Published: May 2005

AbstractAuger electron signals from bulk samples of Si, Cu, Ag and W have been measured using three different machines (V.G. HB50, MA500 and ESCALAB), as a function of primary beam energy E0 (3–30 keV) and angle of incidence θ0 (0–80°). Relative peak‐height data are compared with the calculations of cross‐sections and back‐scattering correction factors presented in Paper I of this series, and with other data and calculations in the literature. The relative cross‐sections agree with experiment within 5% for Si‐K and Ag M5, whereas this agreement worsens to 20% for Cu L3 and W M5. Angular‐dependent experiments reflect the machine geometries and back‐scattering. Values of back‐scattering factors R(θ0) for Si K and W M5 relative to Cu L3 are in good agreement with transport equation calculations. Absolute (peak area) Auger yields have been analysed for one machine, leading to a common effective detector sensitivity (0.35 ± 0.03) for the three elements Si, Cu and Ag.
Determination of the angle of incidence in a Cameca IMS‐4f SIMS instrument
Authors: Meuris M. , De Bisschop P. , Leclair J. F. , Vandervorst W. 
Published: May 2005

AbstractAn improved model for the calculation of the angle of incidence of primary ions is presented for describing secondary ion mass spectrometry (SIMS) measurements in the low primary energy region (<7.5 keV) of a Cameca IMS‐4f with positive primary ions and a positive secondary detection mode. The model explains some of the inconsistencies observed between experiment and the approximative model used so far. Our improvement takes into account the effect of the deflection plates for beam positioning, which leads to a change in the angle of the primary ion with respect to the optical axis of the primary column. A comparison with experimental results is accomplished, showing the improvement of the new model. This new model also explains the slope of the crater bottom in the x‐direction at low primary ion energies, owing to a different sputter yield from one side to the other of the crater bottom.
SIMS/AES characterization of the initial oxidation of an iron—chromium—molybdenum alloy and its base metals at room temperature
Authors: Mathieu H. J. , Landolt D. 
Published: May 2005

AbstractLow‐temperature oxidation of a FeCrMo alloy and their base metals was investigated by static and dynamic positive and negative SIMS combined with AES Ar+ sputter profiling at 5 keV primary beam energy. In situ oxidation was carried out for 0.3–10000 Langmuir (L) oxygen exposure after sputter cleanning. Static SIMS revealed oxidation of chromium at the outer surface at very low exposures (<0.5 L). With increasing exposures, mainly Fe2O3 was formed at the surface. Dynamic SIMS and AES concentration profiles revealed a multilayer structure with an outer Fe2O3 layer followed by a layer rich in chromium oxide. Oxidized molybdenum was found throughout the film and at the oxide/metal interface.
On the role of water in the photoinduced oxidation of amorphous Ge—Se films
Authors: Schroeter B. , Abraham M. , Broese E. , Weissbrodt P. , Melcher N. 
Published: May 2005

AbstractThe photoinduced oxidation of sputtered amorphous Ge—Se films is investigated by AES, XPS and XAES. By variation of the composition of the oxidizing atmosphere, the dominant role of water in the oxidation process is established. The tendency for oxide formation is found to be strongly correlated with the composition of the oxidizing atmosphere and of the Ge—Se film.