bluuebunny/crossref_metadata_2025_split huggingface dataset:
Runner balancing by a direct genetic optimization of shrinkage
Authors: Alam Kevin , Kamal Musa R. 
Published: October 2004

AbstractThe proposed approach to the runner‐balancing problem evaluates differences in shrinkage among the cavities and uses this direct measure of product quality to balance runner systems instead of the indirect methods traditionally used. The runner‐balancing problem was characterized by multiple objectives, which consider both cost and product quality. The resulting multi‐objective optimization problem was solved with a multi‐objective genetic algorithm. Runner‐balancing optimizations varied the diameters and lengths of the runners and the processing conditions. The results suggest that balanced runner systems, which exhibit large differences in cavity pressure profiles, can have lower product costs than systems characterized by similar fill times and cavity pressure profiles. The optimization of the secondary runner lengths and processing conditions also reduced costs significantly. Polym. Eng. Sci. 44:1949–1959, 2004. © 2004 Society of Plastics Engineers.
The effects of polymer additives on the operating windows of slot coating
Authors: Yang C. K. , Wong D. S. H. , Liu T. J. 
Published: October 2004

AbstractAn experimental study was carried out to investigate the effects of polymer additives on the operating windows of slot coating. Two polymer additives—carboxylmethylcellolose (CMC) and polyacrylamide (PAA)—were added to Newtonian glycerin solutions as test fluids. The flow experiment was performed on a lab coater. A flow visualization technique was employed to observe the shapes of coating beads. It was found that three types of defects appear at the lower bound of the operating window, i.e., ribbing, air entrainment, and break lines coupled with dripping. Adding a small amount of polymer additives has little effect on the operating window if the defect is ribbing, but it will expand the air entrainment region. The coating speed can be increased significantly if the defect is break lines coupled with dripping. Polym. Eng. Sci. 44:1970–1976, 2004. © 2004 Society of Plastics Engineers.
Nernst–Ettingshausen and magnetoresistance effects in Hg1–xCdxSe single crystals in vicinity of phase transitions under hydrostatic pressure
Authors: Shchennikov Vladimir V. , Ovsyannikov Sergey V. 
Published: October 2004

AbstractIn the present paper the thermomagnetic longitudinal and transverse Nernst–Ettingshausen (N–E) effects were investigated in Hg1–xCdxSe (x = 0.03, 0.07) single crystals at hydrostatic pressure up to ∼2 GPa. Substitution of Cd atoms into cation sublattice increases strongly the stability of initial zinc blende lattice and shifts the phase transformation into cinnabar structure to higher pressures P ≥ 1.4 GPa. For ternary Hg1–xCdxSe compounds the values of mobility and scattering parameters of charge carriers have been obtained from the N–E and magnetoresistance (MR) effects up to phase transition points 1.4–1.7 GPa. The decreasing of mobility under pressure is consistent with opening of direct semiconductor gap. In vicinity of the structural phase transformations into cinnabar structure an anomaly of transverse N–E effect was observed connected probably with peculiarity of electronic band structure. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure
Authors: Franssen G. , Kamińska A. , Suski T. , Suchocki A. , Kazlauskas K. , Tamulaitis G. , Žukauskas A. , Czernecki R. , Teisseyre H. , Perlin P. , Leszczyński M. , Boćkowski M. , Grzegory I. , Grandjean N. 
Published: October 2004

AbstractLocalization phenomena related to the fluctuating band potential profile of the InGaN alloy were investigated via hydrostatic pressure dependent measurements of luminescence of an InGaN quantum structure. We examine the suitability of the hydrostatic pressure coefficient as a tool for evaluation of the degree of localization of recombining carriers in the InGaN alloy. This is done by experimental investigation of the correlation between the pressure coefficient of the luminescence peak and the Stokes shift between luminescence and the absorption edge, which constitutes a measure of the degree of localization of recombining carriers in the InGaN alloy. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Semiconductor–metal transitions in low‐Z and alkali fluids
Authors: Nellis W. J. 
Published: October 2004

AbstractExperiments are described which observed semiconductor‐metal Mott transitions in fluid H, N, O, Rb, and Cs at ∼2000 K. The pressures required to observe this transition in low‐Z and in alkali fluids differ by a factor of 104. This difference in pressure is caused by differences in radial extents of charge density distributions of the respective atoms. Dynamic pressures and temperatures can now be tuned to probe states not accessible previously to scientific investigation. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Pressure dependence of phonon modes in CdGeP2
Authors: Choi In‐Hwan , Yu Peter Y. 
Published: October 2004

AbstractThe Raman spectra of a single crystal of CdGeP2 have been measured as a function of pressure using a tunable infrared Ti:sapphire laser and a diamond anvil high pressure cell. The pressure coefficients of the zone‐center optical phonons have been determined. The results are compared with those of the corresponding zincblende‐type (GaP and InP) and I–III–VI2 chalcopyrite (AgGaS2) compounds. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Recombination dynamics in self‐assembled InP/GaP quantum dots under high pressure
Authors: Kristukat C. , Dworzak M. , Gonñi A. R. , Zimmer P. , Hatami F. , Dreßler S. , Hoffmann A. , Masselink W. T. , Thomsen C. 
Published: October 2004

AbstractWe have investigated the recombination dynamics in self‐assembled InP/GaP quantum dots by means of time‐resolved photoluminescence measured at low temperatures between 2 and 100 K and high hydrostatic pressure up to 2 GPa. Due to the high‐power levels for pulsed excitation, the quantum dot emission exhibits two components with typical decay times of 5 and 30 ns, corresponding to direct Γ– Γ and X– Γ interband recombination processes, respectively. These decay times appear to be independent of pressure. At a very low pressure of about 0.1 GPa the intensity of the dot emission drops abruptly relative to that of the wetting layer indicating a switching off of a carrier relaxation channel. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
High‐pressure properties of icosahedron‐based solid borons
Authors: Shirai Koun , Masago Akira , Katayama‐Yoshida Hiroshi 
Published: October 2004

AbstractHigh‐pressure experiments have led to significant contributions to understanding of physical properties of icosahedron‐based solid boron. In this paper, we critically review recent results on properties of boron polytypes. The topics discussed are stability of α‐ and β‐boron, elastic properties, phonon properties. In interpreting high‐pressure experiments, special care is needed. In many cases, confusion is emerged from difference between the macroscopic applied deformation and the resulting microscopic displacement of atoms. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Pressure‐Raman study of resonant TO(Γ)–two‐phonon decay processes in ZnS: Comparison of three isotope compositions
Authors: Tallman R. E. , Serrano J. , Cantarero A. , Garro N. , Lauck R. , Ritter T. M. , Weinstein B. A. , Cardona M. 
Published: October 2004

AbstractPressure‐Raman studies (to 15 GPa, at 300 K and 16 K) are reported on 64Zn34S, 68Zn32S, and natural ZnS to compare the effects of resonant 3‐phonon mixing on the TO(Γ) phonons for the different isotope compositions. Under pressure the TO(Γ) Raman profiles exhibit several distinct features, and a sharp Lorentzian TO(Γ) peak eventually emerges at a threshold pressure PTh that differs for each isotope composition. These effects are due to resonant mixing of the TO(Γ) phonon with TA + LA combination modes. Calculations based on a bond‐charge model and perturbation theory reproduce the observed pressure variations in the shape and the width of the TO(Γ) peaks. It is shown that these changes relate to singularities in the TA + LA density of states. Mass scaling of the TO(Γ) and TA + LA modes explains the isotope effect on PTh, and leads to the estimate γLA(W) ∼1.2. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Femtosecond pump and probe spectroscopy in Bi under high pressure
Authors: Kasami M. , Mishina T. , Nakahara J. 
Published: October 2004

AbstractWe have observed coherent phonons and electronic response in bismuth single crystals under hydrostatic pressure up to 3 GPa at room temperature. Both signals show drastic changes at 2.5 GPa where phase transition occurs. The phonon frequency decreases from 2.9 THz to 2.5 THz and the initial phase of the phonon shifts about 180 degrees at this pressure. The electronic response shows anomalous behaviour above phase transition pressure. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Pressure‐dependent photoluminescence study of CuGaSe2
Authors: Shan W. , Walukiewicz W. , Wu J. , Yu K. M. , Ager J. W. , Siebentritt S. , Rega N. 
Published: October 2004

AbstractWe present the results of a pressure‐dependent photoluminescence (PL) study on CuGaSe2 films grown on GaAs substrate by metalorganic vapor phase epitaxy. The low‐temperature PL spectra of the CuGaSe2 samples measured at atmospheric pressure are dominated by one near band edge exciton luminescence line and two strong and relatively broad emissions associated with donor acceptor pairs (DAP) transitions. All the observed luminescence emission lines shift toward higher energy with increasing pressure at the same rate. The nearly identical pressure coefficients of the two DAP emissions as compared to that of the exciton emission confirm the suggestion that the recombination processes associated with the DAPs involve one shallow effective‐mass donor and two different acceptor species with different binding energies and related to two different native defects. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Symmetric and asymmetric GaAs/Al0.3Ga0.7As double quantum well subjected to hydrostatic pressure and applied electric field
Authors: Morales A. L. , Raigoza N. , Montes A. , Porras‐Montenegro N. , Duque C. A. 
Published: October 2004

AbstractThe combined electric field and hydrostatic pressure effects on the binding energy of a shallow‐donor impurity in symmetrical and asymmetrical GaAs/Al0.3Ga0.7As double quantum wells are calculated using a variational procedure within the effective‐mass approximation. Double quantum wells are examinated considering impurities situated at the well centers. Due to the applied electric field both structures become asymmetric from the impurity potential point of view. According to the dimensions the structures are symmetric (equal well lengths) and asymmetrical (different well lengths). (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
High pressure Raman study of Y3Al5O12
Authors: Arvanitidis J. , Papagelis K. , Christofilos D. , Kimura H. , Kourouklis G. A. , Ves S. 
Published: October 2004

AbstractThe effect of high hydrostatic pressure on Y3Al5O12 (YAG) single crystals has been studied up to 15 GPa by Raman spectroscopy at room temperature. The pressure dependence of 23 Raman‐active modes, out of 25 predicted by group theory, has been followed. The determined mode Grüneisen parameters (γi) extend over a relatively narrow range (0.6–2.4) indicating binding forces of the same nature and order of magnitude. However, the modes in the high (650–900 cm–1) and middle (500–600 cm–1) regions of the Raman spectrum exhibit γi parameter values ranging between 0.9–1.4 and 0.7–0.8, respectively; reflecting that different type of AlO4 molecular vibrations and consequently different kind of restoring forces being involved in these modes, in accordance with theoretical predictions. The strength of interactions in YAG along with the high compactness of the garnet structure explains, somehow, their high stability upon pressure. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
High pressure as a tool to tune electronic coupling in self‐assembled quantum dot nanostructures
Authors: Rybchenko S. I. , Itskevich I. E. , Andreev A. D. , Cahill J. , Tartakovskii A. I. , Skolnick M. S. , Hill G. , Hopkinson M. 
Published: October 2004

AbstractHigh pressure provides an efficient way of controlling the electronic properties of semiconductor nanostructures. We use pressure to tune electronic coupling in stacks of self‐assembled quantum dots (SAQDs). The coupling occurs as soon as the distance and the height of the barriers between the dots are sufficiently small to permit interaction between the wavefunctions of electrons in adjacent dots. We demonstrate experimental evidence that application of pressure reduces and may quench the coupling. This happens because, under pressure, the inter‐dot barriers become higher and hence less transparent for electron wavefunctions. The effect was revealed by means of photoluminescence spectroscopy and confirmed by theoretical modelling. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Structural phase transition in lanthanum monochalcogenides induced by hydrostatic pressure
Authors: Varshney Dinesh , Kaurav N. , Sharma P. , Shah S. , Singh R. K. 
Published: October 2004

AbstractAn effective interionic interaction potential (EIOP) is developed to investigate the pressure induced phase transitions from NaCl‐type (B1) to CsCl‐type (B2) structure in lanthanum monochalcogenides LaX [X = S, Se, Te] compounds. The long range Coulomb, van der Waals (vdW) interaction and the short‐range repulsive interaction up to second‐neighbor ions within the Hafemeister and Flygare approach with modified ionic charge are properly incorporated in EIOP. The vdW coefficients are computed following the Slater–Kirkwood variational method, as both the ions are polarizable. The estimated value of the phase transition pressure (Pt) and the magnitude of the discontinuity in volume at the transition pressure are consistent with the reported data. A large volume discontinuity in the pressure‐volume phase diagram identifies the structural phase transition from B1 to B2 structure. We also study the second order elastic constants for these La compounds. It appears that the vdW interaction is effective in determining the elastic and structural properties of these test compounds. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
High‐pressure thermopower of PbTe‐based compounds
Authors: Ovsyannikov Sergey V. , Shchennikov Vladimir V. 
Published: October 2004

AbstractIn the present paper the thermoelectric properties of p‐type PbTe‐based compounds (Pb1–xGaxTe, Pb1–xSnxTe, Pb1–xSixTe, Pb1–xMnxTe, PbTe1–y, Pb1–yTe) have been investigated at high pressure up to ∼12 GPa. Structural phase transitions from cubic NaCl into orthorhombic GeS structure have been observed with thermoelectric measurements. A low sensitivity of thermoelectric properties to high‐pressure treatment has been found for PbSnTe compounds (x ≈ 0.29). For the rest of the samples with a small content of doping atoms a sign inversion and a following maximum of thermoelectric power S have been established at pressures ∼1–3 GPa. The results obtained show the possibility of improving the thermoelectric figure of merit and effectiveness at moderate pressures for PbTe‐based compounds. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Investigations of multiphase states in vicinity of pressure‐induced phase transitions
Authors: Shchennikov Vladimir V. , Ovsyannikov Sergey V. , Vorontsov Grigoriy V. , Shchennikov Vsevolod V. 
Published: October 2004

AbstractIn the present work equations have been derived for thermomagnetic and galvanomagnetic effects of multiphase systems. The equations allow us to analyse complex thermal–electrical–magnetic properties of semiconductors under variation of concentration and configuration of inclusions. The results obtained make it possible, for example, to explain discrepancies between values of phase‐transition pressure determined from thermal, electrical, volumetric and other effects. A model developed has been applied for analysis of semiconductor–metal phase transitions. The approach offered allows us also to search for ways for improvement of thermoelectric and thermomagnetic effectiveness and figure of merit of complex semiconductor systems. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bronchoplastic procedures for lung cancer: Clinical study in 136 patients
Authors: Kawahara Katsunobu , Akamine Shinji , Tsuji Hiroharu , Nakamura Akihiro , Takahashi Takao , Tagawa Yutaka , Ayabe Hiroyoshi , Tomita Masao 
Published: October 2004

AbstractBetween 1969 and 1991 a total of 136 patients (119 men, 17 women) underwent bronchoplastic procedures for lung cancer. A bronchoplastic procedure with angioplasty was performed in 37 patients. Ages ranged from 30 to 79 years (mean 62 years). The histologic type of cancer was squamous cell carcinoma in 97 patients (70.0%). The 30‐day mortality was 5.1% (7 patients), and morbidity was 30.1% (41 patients). The most common complications were bronchopleural fistula in nine (6.6%), stricture or stenosis in eight (5.9%) and atelectasis in eight patients. Local recurrence occurred in nine (6.6%) patients. The overall 5‐year survival for patients undergoing bronchoplastic procedures was 37.1%: 60.1% for patients with stage I disease (n=41), 31.7% for stage II (n=17), and 29.7% for stage IIIA (n=66). We conclude that bronchoplastic procedures are effective therapy for selected patients with lung cancer.
Association of immunohistochemical p53 tumor suppressor gene protein overexpression with prognosis in highly proliferative human mammary adenocarcinomas
Authors: Schimmelpenning Hendrik , Eriksson Elina T. , Zetterberg Anders , Auer Gert U. 
Published: October 2004

AbstractAn increasing body of evidence suggests that in addition to conventional histopathologic tumor characteristics, DNA content measurements, cell kinetic data, and investigatios of tumor suppressor gene expressions might be of valuable information in breast cancer patients. Against this background we investigated immunohistochemically overexpression of the interphase associated protein proliferating cell nuclear antigen (PCNA) and the mutant p53 protein in routinely paraffin‐embedded surgical specimens from 180 breast cancer patients with known nuclear DNA profiles. The mean clinical follow‐up was 16 years (range 13–20 years). The percentage of PCNA immunoreactive tumor cell nuclei ranged between <5% and 60% (mean 13.59±10.85%). There was a direct association between high levels of PCNA expression (>20%) and p53 protein overexpression (p=0.019). Mutant p53 protein overexpression was found in 44 of 180 (24%) cases and was significantly related to high histologic tumor grade (p=0.004), DNA aneuploidy (p=0.001), and high levels of PCNA expression (p=0.001). Patients with highly proliferative carcinomas (>20% PCNA expression) had a shortened distant metastases‐free survival when their neoplasms overexpressed p53. In contrast, the distant metastases‐free survival of patients with highly proliferative, p53‐negative tumors was significantly longer (p=0.03). Immunohistochemical p53 protein overexpression thus appears to be indicative of an increased malignant potential in breast cancer patients. Highly proliferative tumors composed of p53 immunoreactive neoplastic cells clinically seem to behave more aggressively than the highly proliferative p53‐negative tumors.
Curative surgery for gastric cancer: Study of 166 consecutive patients
Authors: Mendes de Almeida J. C. , Bettencourt A. , Santos Costa C. , Mendes de Almeida J. M. 
Published: October 2004

AbstractFrom January 1980 to December 1991 we operated on 295 patients with a gastric carcinoma. In 166 cases (56.3%) surgery was performed with curative intent. In 93 patients (56%) a subtotal gastrectomy was performed, and in 73 cases (44%) a total gastrectomy. In all the cases a D‐2 type lymphadenectomy was used. The global morbidity rate was 23%, and in‐hospital mortality was 3.6%. The morbidity and mortality rates of these two operations were statistically different. Global 5‐year survival estimate for the whole series is 61.3%. Univariate and multivariate analysis according to T and N (TNM classification), the number of positive nodes resected, and the relation of positive per resected nodes, revealed statistically different outcomes. This kind of quantitative classification allowed identification of high risk groups irrespective of site of nodal involvement. Tumors classified as intestinal or diffuse type by the Lauren classification had similar survival curves and 5‐year survival estimates (p=0.834). By univariate and multivariate analysis this classification did not reveal a prognostic value in this group of patients. In our opinion, tumor penetration and lymph node involvement are at present the most reliable prognostic factors available.
Selective decontamination of the colon before elective colorectal surgery
Authors: Taylor T. W. , Lindsay G. ,   West of Scotland Surgical Infection Study Group
Published: October 2004

AbstractThe controversy over the route of administration of antibiotic prophylaxis in patients undergoing elective colorectal operations persists for oral, parenteral, and a combination of the two routes. The oral antibiotics commonly administered for colorectal prophylaxis, neomycin and eythromycin base, are not absorbed in the gastrointestinal tract (GIT). However, the 4‐fluoroquinolones are absorbed in the upper GIT and are excreted in part by the colonic mucosa. Their action is then to remove, or severely depress, the gram‐negative aerobic bacilli leaving the anaerobic flora unaffected. This action is the principle of selective decontamination. We have assessed the efficacy of oral ciprofloxacin in a prospective randomized clinical trial in which all patients received piperacillin 4 g IV as single‐dose parenteral prophylaxis. A group of 327 evaluable patients were randomized to receive ciprofloxacin 500 mg b.i.d. with the preoperative cathartic (group OA,n=159) or no oral antibiotic (11.3%) patients in group OA and 39 (23.2%) patients in group NOA (χ2= 7.2,p=0.007). Operation‐related infection of any type occurred in 23 (14.5%) patients in group OA compared with 55 (32.7%) in group NOA (χ2= 14.0,p=0.0002). The median postoperative hospital stay was 11 days (interquartile range 4.5 days) for group OA and 12 days (interquartile range 8 days) for group NOA (Mann Whitney U test,p=0.005). Ignoring the treatment group, the median postoperative hospital stay was 17 days (interquartile range 10 days) for infected patients and 11 days (interquartile range 4 days) for those not infected. We conclude that the administration of ciprofloxacin 500 mg b.i.d. with the preoperative cathartic significantly reduces the incidence of infection after elective colorectal operations and should form part of the preoperative preparation for such operations.