bluuebunny/crossref_metadata_2025_split huggingface dataset:
6.2: A Select Line Driver for the Offset‐Scan‐and‐Hold Dual Select Diode AMLCDs
Authors: den Boer Willem 
Published: January 2005

AbstractThe basic architecture for an offset‐scan‐and‐hold row select driver for Dual Select Diode (DSD) AMLCDs is presented. It can be implemented in a 30 V CMOS process. The performance of the row driver was simulated with SPICE. This drive method eliminates vertical cross‐talk and can be used in conjunction with 5 V or 3.3 V data drivers on low cost AMLCDs with diagonal size up to at least 30 in.
27.2: Twisted‐Nematic Compensator for Reflective Color NB‐STN‐LCDs with a Single Polarizer
Authors: Masaki A. , Uesaka T. , Kumagi Y. , Kaminade K. , Toyooka T. , Kobori Y. 
Published: January 2005

AbstractThe performance of a reflective color NB‐STN‐LCD with a single polarizer in combination with a twisted‐nematic compensator is discussed. In contrast to combined uniaxial retarder sheets, it is possible to create a display with a high contrast ratio using only a single sheet, which is one of the advantages of the twisted‐nematic compensator. For optimizing the performance of the display, the dispersion of the birefringence was found to be essential as well as the twist angle and the retardation of the compensator.
27.3: New Cholesteric Colour Filters for Reflective LCDs
Authors: Doornkamp C. , Wegh R. T. , Lub J. 
Published: January 2005

AbstractIn this paper, we describe a new method to manufacture cholesteric colour filters. The cholesteric colour filter is made by a simple method, comprising one coating step and two UV exposure steps. The optical performance of the cholesteric colour filter and a reflective LCD with a cholesteric colour filter inside the cell will be discussed. The cholesteric colour filter has a high colour purity and the display shows a high contrast ratio of 35:1.
28.1: Invited Paper: Current Status and Trends for Business Projector Technology & Markets
Authors: Dash Sweta 
Published: January 2005

AbstractUltraportable projectors (LCD, MEMS/DLP and LCOS) have become essential tools for the business presentation market. Manufacturers are breaking barriers every year in weight, size, and brightness, and are offering projectors with increased features and lower prices. The next generation of projectors can work more as information technology devices with wireless connectivity and networking abilities. The current status and future trends of business projectors will be presented in this paper.
28.2: Tiled Display Utilizing Ceramic Actuators for Large Area Flat Panels
Authors: Takeuchi Y. , Nanataki T. , Ohwada I. 
Published: January 2005

AbstractWe have developed a novel display device driven by micro ceramic actuator arrays. Typically 60–150 inch diagonal size direct viewing flat display can be flexibly built up by tiled display technology with non‐seal structure. We successfully built up 33 inch engineering model display.
29.3: Fast Response 15‐in. XGA TFT‐LCD with Feedforward Driving (FFD) Technology for Multimedia Applications
Authors: Nakanishi K. , Takahashi S. , Oura H. , Matsumura T. , Miyake S. , Kobayashi K. , Oda K. , Tahata S. , Yuuki A. , Someya J. , Yamakawa M. 
Published: January 2005

Abstract15‐in. XGA TFT‐LCD with fast response time is developed. The response time between grayscale transitions is reduced to less than 20ms by adopting newly developed Feedforward Driving (FFD) technology. High brightness, high color saturation, and wide viewing angle characteristics are also achieved, which are significant for multimedia applications.
6.3: Field‐Sequential Smectic LCD with TFT Pixel Amplifier
Authors: Takatori Ken‐ichi , Imai Hiroshi , Asada Hideki , Imai Masao 
Published: January 2005

AbstractA field‐sequential color smectic LCD has been developed using low‐temperature poly‐Si TFTs. An active‐load type TFT pixel amplifier is used to drive a V‐shaped‐switching smectic LC without voltage fluctuation. The optical response time is 300 μs for a field frequency of 180 Hz. This LCD is capable of displaying high‐quality motion‐picture images.
29.4L: Late‐News Paper: Image Synchronized Brightness Control
Authors: Hwang Insun , Park Cheol Woo , Kang Sung Chul , Sakong Dong Sik 
Published: January 2005

AbstractA novel image synchronized brightness control (ISBC) method for active matrix liquid crystal display (AMLCD) was developed, where automatic modulation of the backlight luminance is performed according to the gray distribution of image data. The ISBC can deliver a peak luminance of 500 ∼ 600 nits, which is very comparable to that of cathode ray tubes (CRTs) and is 2 to 3 times higher than that of normal LCD. The dynamic CR is over 700. With this ISBC method we can display a vivid moving image, while maintaining the same level of power consumption and a backlight.
31.3: Organic EL Materials Based on Styryl and Amine Derivatives
Authors: Hosokawa Chishio , Toshio Sakai , Fukuoka Kenichi , Tokailin Hiroshi , Hironaka Yoshio , Ikada Hidetsugu , Funahashi Masakazu , Kusumoto Tadashi 
Published: January 2005

AbstractExcellent organic electroluminescent materials are needed to obtain the color EL devices with high performance. We have succeeded in realizing bright and efficient devices with long lifetime in various color regions, based on styryl and amine derivatives.
6.4: Active Matrix Amorphous Silicon Photo‐sensor Array for Flexible Substrate
Authors: Won Sung Hwan , Ryu Jai , Hur Ji Ho , Jang Jin , Jang Gyu Jung , Lee Cheor Woo , Jung Suk Tae 
Published: January 2005

AbstractWe developed an active matrix photo‐sensor of a 250 dpi for flexible substrate using hydrogenated amorphous silicon thin film transistor (a‐Si:H TFT) and photoconductor (PC). We fabricated a small prototype, having 260 × 256 pixels with a 100 μm pixel pitch at a maximum process temperature of 180 °C.
32.1: Foam Glass Barrier™‐ A New PDP Barrier Rib Technology
Authors: Ernsthausen Roger E. , Friedman Peter S. , Barnhart Charles J. , Cutcher Randall J. , Keglewitsch Vivian J. , Choi John H. , Suess Terry R. , Scheuer Ann L. , Cartagena Angel 
Published: January 2005

AbstractA new, high throughput, low cost process for the manufacture of PDP barrier ribs — Foam Glass Barrier™ — is described. The new barrier rib is a vitreous glass containing a uniform distribution of small, closed bubbles which chemically etches at high rates anisotropically, has high strength and does not outgas.
32.2: Development of PDP Rear Panel by Etching Technology
Authors: Kim W. S. , Lee J. S. , Lee G. W. , Kim S. Y. , Ha H. T. 
Published: January 2005

AbstractLG Micron Ltd. has developed PDP Rear Panel by Etching Technology enabling large area 30″ to 65″ diagonal size and excellent resolution VGA to HDTV. This method is able to achieve cost benefits too. In this paper, we present etching technology, which introduces alternative method to fabricate PDP Rear Panel against conventional technologies, Combining materials, manufacturing process and 40″ PDP module evaluation.
32.3: Barrier Ribs Formed for PDP by Rolling of Green Tape
Authors: Kim Yong‐Seog , Jeon Hyun‐Jo , Kim Hyun‐Sung , Lee Seog‐Young , Hong Soon‐Kug 
Published: January 2005

AbstractIn an attempt to explore a possibility of forming barrier ribs for the plasma display panel by plastically deforming a green tape with a grooved roll, the effects of green tape composition and rolling parameters on the height of the barrier ribs formed were studied.
P‐4: SPC Poly‐Si TFT Having a Maximum Process Temperature of 380°C
Authors: Park Seong Jin , Cho Bong Rae , Kim Kyung Ho , Cho Kyu Sik , Yoo Seong Yeol , Kim Ah Young , Jang Jin , Shin Dong Hyuk 
Published: January 2005

AbstractA very thin Ni layer was deposited onto a‐Si, which was annealed for crystallization in the presence of the electric field. The NiSi2 precipitates were formed at the a‐Si surface, and needle‐like crystallites have ben found in the a‐Si network even at 350°C. The poly‐Si crystallized at 380°C has been used for the TFT, exhibiting a field effect mobility of 51 cm2/Vs and a threshold voltage of −2.2 V.
P‐6: Submicron Thin Retardation Coating
Authors: Lazarev Pavel , Ovchinnikova Natalya , Paukshto Michael 
Published: January 2005

AbstractNew submicron film retarders are produced by the deposition and drying of water‐based lyotropic liquid crystal materials on various substrates. The coatings have high refraction coefficient anisotropy. Birefringence varies from 0.5 to 1.0 for 380–900nm wavelength range. These materials provide new options for LCD designs.
P‐7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene Terephthalate substrates for Touchscreen Applications
Authors: Cairns Darran R. , Crawford Gregory P. , Chernefsky Anthony F. 
Published: January 2005

AbstractThe wear mechanisms of the Indium Tin Oxide (ITO) coated Polyethylene Terephthalate (PET) topsheet in resistive touchscreens are investigated using a custom built sliding wear tester and electron microscopy studies. Cracking of the ITO layer and adhesive wear failure occurs in the topsheet after a large number of wear cycles due to increasing deformation of the substrate and thus increasing contact stresses. The damage to the ITO layer causes a progressive increase in the deviation from linearity in the response of resistive touch sensors. It is essential to understand the factors affecting the wear resistance of the topsheet in developing high‐performance touchscreens.
P‐8: Conductive and Adhesive Properties of Z‐axis Adhesives for Tail Bonding
Authors: Cairns Darran R. , Crawford Gregory P. , LaCourse Michele L. , Jakubowski Michael J. , Bottari Frank J. 
Published: January 2005

AbstractThe change in resistance of an anisotropic conducting adhesive (Z‐axis adhesive) solderless joint with increasing strain in a shear configuration is investigated using a modified mechanical testing machine. No change in resistance is evident up to a load of 25 Newtons above this load the resistance increases rapidly and electrical continuity is lost. We also report on the change in resistance with strain after ageing at 85°C and 85 % Relative humidity for six days. The anisotropic conducting adhesive performs well in shear after ageing.
P‐9: TV Display Applications by an Advanced Multi‐Media Display Processor (AMDP2)
Authors: Sawaragi Takashi , Miyaguchi Hiroshi , Kojima Takao 
Published: January 2005

AbstractThe AMDP2 provides various features for current television system such as frame synchronization, de‐interlace, still image display, multiple pictures display and so on. AMDP2 is a programmable device which allows customers to realize their signal processing algorithm. By using AMDP2 and its capabilities, various video format signals can be converted to specific screen format and displayed on any monitor, including TV, PC, LCD, PDP and DLP.
P‐15: The Methods of Analysis and Synthesis of Symbols of Matrix Alphabets of Electronic Indicators and Displays
Authors: Litvak I. I. , Fel'Dman D. V. , Bogachyov K. A. 
Published: January 2005

AbstractThis paper describes the proposed method of analysis of symbols of matrix alphabets, that enable to synthesize new alphabets. The investigation method based on “basic character of alphabet” criterion. An operator could perceive visual information with higher precision, rapidness and reliability. Number of errors in new alphabets 3–10 times as less.
LP‐1: Late‐News Poster: Strong Accommodation Bias to a Collimated Retinal Scanned Light Display
Authors: Schowengerdt Brian T. , Seibel Eric J. , Kelly John P. , Furness Thomas A. 
Published: January 2005

AbstractAccommodation was measured while subjects viewed a retinal scanned light display that has a focus plane near optical infinity. Compared with dark accommodation, subjects over‐accommodated to the display (mean 2D; 0–8D range). Subjects were unaware of blurring, suggesting open‐loop accommodation. Accommodation fluctuates greatly between subjects viewing a fixed‐focus retinal scanning display.
P‐18: Residual Gas Analysis on Various Tube Size and Different Process Stages in Cathode Ray Tubes
Authors: Lee Byoung‐Joo , Jung Jae‐Hoon , Park Gong‐Seok 
Published: January 2005

AbstractWe have analyzed the residual gases in cathode ray tubes (CRT) quantitatively by the quadrupole mass spectrometer (QMS). The analyses have been performed on different process stages and various tube size.(17″–32″) There are many changes in residual gases of CRT according to different process stages. And if all other conditions are same or similar, it can be said that the vacuum level of a big CRT is higher than the small one's. These results give us deeper information and understanding for CRT developing and manufacturing.
P‐19: Morphological Analysis of Disposed Screen and Disposing Processes Optimization by Robust Design
Authors: Lee Seung‐Houn , Nam Geon‐Yong , Kim Jin‐Pal 
Published: January 2005

AbstractIn the CRT image quality, the geometrical morphology of phosphor such as the phosphor thickness and density is important to maintain uniform color. In this work, the morphology of screen is analyzed by Morphological Analysis to establish the relationship between the Morphology of Phosphor and Image quality. To do this the Morphology of screen is measured by non‐contact profiler. The non‐contact profiler permits to measure precisely geometrical characteristics of phosphor on the screen. From the different process condition the screen surface is measured and analyzed to search optimal process condition.
P‐20: A Predictor Method Based on Neural Network for CRT Cut‐off Potential Control
Authors: Mo C. N. , Luo M. S. David , Yeh C. H. , Wang T. C. 
Published: January 2005

AbstractA predictor system based on neural network to control the cut‐off potential voltage within a stable range in CRT manufacturing was proposed. The neural networks and the genetic algorithms are presented for minimize the error value between the predicted and the desired by regulating the affect parameters. Utilizing this forecast system, the mechanical factors could be adjusted in advance and the cut‐off potential voltage would have a suitable control. This method is applied on the quality assurance department to demonstrate the stability of the cut‐off potential voltage and the CRT mass production performance.
P‐21: Deflected Beam Analysis System for Electron Gun
Authors: Ahn Ho Young , Kim Jeong Nam , Yang Hack Cheol , Yim Sang Hoon , Jang Hyung Wook , Oh Tae Sik , Cho Yoon Hyoung , Fukishima Masakazu 
Published: January 2005

AbstractA deflected beam analysis system for the design of electron gun has been developed. Magnetic field measurement machine is established to get the magnetic field distribution of a deflection yoke. The 3‐D Gaussian beamlet theory taking the magnetic field into account is used to obtain space charge density distribution. The comparison results between simulation and measurement show that deflection sensitivity and focus characteristic differences are within 1 % and 10 %, respectively.
P‐22: Hysteresis Loss in the Ferrite Core of a Deflection Yoke
Authors: Zhang Xiaobing , Yin Hanchun , Harberts Dirk W. 
Published: January 2005

AbstractA new method is developed for estimating the hysteresis loss of a ferrite core of a deflection yoke. With this method, the losses of various ferrite materials are measured as a function of frequency and temperature. The results are compared to theory and are used to estimate the hysteresis loss in a 17″CMT ferrite core.
P‐24: Incorporation of Optiva Polarizers in LCD Production Line
Authors: Bobrov Y. , Lazarev P. , McMurtry D. , Remizov S. 
Published: January 2005

AbstractA new concept of a production line for fabrication of LC displays with Optiva polarizers is discussed. Depending on LCD design the polarizer may be formed at diverse stages of the LCD process. A common approach and basic features of incorporation of new polarizer in LCD mass production are considered. Prototype equipment was fabricated and sample TN LC displays were produced to demonstrate the viability of this new technology.
P‐31: Cell Gap Measurement Methods for Low‐Cell‐Gap and Single‐Polarizer Reflective LCDs
Authors: Lee Seo Hern , Park Won Sang , Lee Gi‐Dong , Kim Jae Chang , Yoon Tae‐Hoon 
Published: January 2005

AbstractWe propose two novel methods to measure the cell gap of a liquid crystal cell. One is a method to measure the cell gap of a low cell‐gap TNLC cell by rotating a quarter‐wave retarder. With the proposed method, we can measure the cell gap d of TNLC cells with d < 4 μm. The other is a method to measure the cell gap of a single‐polarizer reflective LC cell as well as the wavelength dependence of the retardation Δnd by using a spectrometer.
P‐33: A Novel TFT‐LCD Characterization Method Using Retention Measurement
Authors: Tokuhiro Osamu , Furumoto Katsuyiki , Sorida Mikinari , Miyazaki Yoshihiro 
Published: January 2005

AbstractWe have developed an optical measurement system for TFT‐LCD cells which measures not only conventional optical characteristics such as voltage‐transmittance, flicker and response time but also retention time. By using specific TFT driving condition, retention time measurement can address the cause of various current leakage problems.
7.2: OLED and LED Displays with Autonomous Pixel Matching
Authors: Salam P. 
Published: January 2005

AbstractThis paper discusses control systems that provide intensity and color matching for OLED displays and large outdoor LED displays. A side‐light sensor for an OLED display enables pixel intensity and color correction parameters to be established and updated automatically during the display lifetime. Correction parameters for the LED display, also, can be established and updated.
P‐37:Design of a Thin Multiple‐Lamp Backlight System by Optical Simulation
Authors: Park Jonglee , Lim Sungkyoo 
Published: January 2005

AbstractThe thin vertical type backlight system was designed by optical simulation. The high luminance and large size backlight can be designed efficiently by using optical simulation. The simulated backlight system showed 90% of uniformity with thickness less than 10mm.
P‐40: Effect of CH4 Plasma Post Treatment on Carbon Nanotubes by MPECVD
Authors: Chu Hack Rhym , Jung Jae‐Hoon , Park Gong‐Seok 
Published: January 2005

AbstractWe have successfully developed vertically aligned carbon nanotubes (CNTs) on Ni/Fe alloy metal substrate by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) and methane (CH4) plasma post treatment was carried out on its surface. When CH4 plasma exposure time increased, the turn‐on electric field of CNTs decreased from 2.6V/μm to 1.8V/μm with a steep I‐V curve. It is found that the electron emission characteristics of CNTs are strongly influenced not only by the growth condition but also by the post treatment as CH4 plasma. Furthermore, we investigate the structure of the CNTs by SEM (Scanning Electron Microscopy) analysis and obtained the lifetime over 800 hours by measurement of emission current versus time.
P‐42: Effects of Deposition Temperature on the Etched Feature of Thin Chromium Film and Their Application to Field Emitter Arrays (FEAs)
Authors: Kim Hoon , Park Jong‐Won , Ju Byeong‐Kwon , Lee Yun‐Hi , Oh Myung‐Hwan , Jang Jin 
Published: January 2005

AbstractThe etched features of the thin Chromium (Cr) films deposited on SiO2‐Si substrate were investigated as a function of substrate temperature during rf‐sputtering deposition. In this work, the changes of both the grain structures and crystallographic orientations of sputtered Cr‐films as a function of substrate temperature were examined by Scanning Electron Microscopy (SEM) and X‐Ray Diffraction (XRD) measurement. In these measurements, we found that the tapering angle (θt) of thin Cr‐film after reactive ion etching depends on the deposition condition, especially, substrate temperature during rf‐sputtering process. Based on the obtained results, we fabricated the two kinds of Cr‐gated Mo‐tip field emitter arrays (FEAs): one is a FEAs with tapered gate electrode (tapering gated FEAs, θt ≤ 90°) and the other is a FEAs with tapering‐free gate electrode (non‐tapering gated FEAs, θt = 90°), compared the electron emission characteristics for this two kinds of FEAs.
P‐43: A Simple Structure and Fabrication of Carbon‐Nanotube Field Emission Display
Authors: Choi Y. S. , Kang J. H. , Kim H. Y. , Lee Y. J. , Kim J. W. , Jung J. E. , Kim J. M. , Jin Y. W. , Lee N. S. , Jo S. H. , Choi K. S. , Lee C. G. , You J. H. 
Published: January 2005

AbstractA triode structure of field emission displays based upon carbon nanotube emitters is presented. In this structure, gate electrodes are located underneath cathode electrodes with an in‐between insulating layer, so called an under‐gate type triode structure. The modulation of electron emission by changing gate voltages is confirmed. The advantage of simple structure and fabrication processes may lead the under‐gate triode type structure to the practical applications.
P‐45: Performance of in‐situ Laser Vacuum Sealing and Annealing on the Panel for the Application of Field Emission Displays
Authors: Hong J. P. , Seo D. S. , Kim C. O. , Cha S. N. , Song B. K. , Park N. S. , Lee N. S. , Kim J. M. , Chee J. K. 
Published: January 2005

AbstractIn‐situ laser sealing and annealing treatments have been performed inside a high vacuum chamber for efficient completion process of field emission displays. A high power Nd:YAG continuous wave (λ = 1,064nm) laser was mainly used as an irradiation source was used as a source. In a packaging scheme, the most vital part of the panel was kept at temperature below 300°C to shorten the entire panel process. Experimental work exhibits efficiently local hitting of frit by the laser to stitch both cathode and anode plate during the short time. In addition, laser treatment on electrophoretically deposited phosphors has been carried out as one of efficient post‐annealing methods in order to improve the brightness of the phosphor coated on indium‐tin oxide‐coated glasses. For the annealing process, two basic parameters, such as laser power and treatment time were examined inside the same vacuum chamber. The experimental results presented useful laser‐annealing time and enhanced improvement of about 10% in the brightness after the laser irradiation on the phosphor. The improvement in the brightness was thought due to the surface cleaning effect on the phosphor surface.
P‐51: Preparation of (Y,Gd)BO3:Eu3+ Phosphor with High Luminescent Efficiency by New Synthetic Method
Authors: Kim Dong‐Kuk , Yoon Seon‐Mi , Park Cha‐Joo , Byeon Song‐Ho , Park Jung‐Chul , Kim Bong‐Chul , Lee Byung‐Kyo 
Published: January 2005

AbstractTo improve the luminescent efficiency of conventional (Y,Gd)BO3:Eu3+ red‐phosphor for the plasma display panel (PDP), we have developed a new synthetic method such that the stoichiometric amount of boric acid is reacted with small‐sized and spherical (Y,Gd)2O3:Eu3+ phosphor oxides prepared by thermal decomposition of urea. The sol‐gel method using citric acid as a complex‐networking and fuel agents was also applied to compare the difference in luminescent efficiency under the vacuum ultraviolet (VUV) excitation depending on the synthetic methods. In this study, the most efficient composition of orthoborate was determined to be (Y0.64Gd0.31)BO3:0.05Eu3+. Orthoborate phosphor materials prepared by this new synthetic method have exhibited more effective VUV absorption in the range from 140 nm to 180 nm, and thus higher emissive brightness under the PDP operating condition than those of commercial phosphor and materials prepared in sol‐gel method. It is proposed that the present new synthetic method can improve crystalline purity and spherical morphology of phosphor particles and thereby the luminescent efficiency.