(Invited) Fabrication Technique of Ferroelectric HfxZr1−XO2 Thin Films Using ALD-ZrO2 Nucleation Layers
Authors: Onaya Takashi 
Published: February 2024

Ferroelectric HfxZr1−xO2 (HZO) thin films have attracted considerable attention towards high-density and low-power ferroelectric memory devices of ferroelectric random access memory (FeRAM) and ferroelectric field-effect transistors (FeFETs) [1]. To obtain ferroelectric orthorhombic (O) phase of HZO films, several techniques have been investigated, such as the TiN stressor layer technique [2] and controlled annealing conditions [3]. On the other hand, we pay attention to the ZrO2 nucleation layer technique because ZrO2 films deposited by atomic layer deposition (ALD) method formed a nanocrystalline structure and consisted dominantly of O, tetragonal (T), and cubic (C) phases, whose lattice constants are considerably close to that of ferroelectric O phase for HfO2 [4]. In this paper, we report the crystallinity and ferroelectricity of HZO films fabricated using the ZrO2 nucleation layer technique for metal-ferroelectric-metal (MFM) and metal-ferroelectric-semiconductor (MFS) capacitors.
First, four types of MFM capacitors of TiN/HZO/TiN (MFM w/o), TiN/HZO/bottom-ZrO2/TiN (MFM B-ZrO2), TiN/top-ZrO2/HZO/TiN (MFM T-ZrO2), and TiN/top-ZrO2/HZO/bottom-ZrO2/TiN (MFM D-ZrO2) were systematically investigated for the FeRAM applications [5]. The thicknesses of the ALD-grown HZO and ZrO2 films were 10 and 2 nm, respectively. The post-deposition annealing was performed at 600°C. The remanent polarization (2P
r
= P
r

+
− P
r
−) of the MFM capacitors increased in the following order: MFM w/o (12 µC/cm2) < MFM B-ZrO2 (15 µC/cm2) < MFM T-ZrO2 (23 µC/cm2) < MFM D-ZrO2 (29 µC/cm2), while all capacitors showed almost the same coercive electric field (E
c) value of around 1.2 MV/cm. Therefore, maximum 2P
rvalue of the MFM capacitor was obtained using the top- and bottom-ZrO2 nucleation layers. For the MFM capacitors with ZrO2 nucleation layers, epitaxial-like grain growth of the HZO film occurred on the nanocrystalline top- and bottom-ZrO2 layers. Moreover, the relative ratio of O/T/C phases in the ferroelectric film, which was estimated using the peak area ratio of O(111)/T(101)/C(111)/{M(−111)+ O(111)/T(101)/C(111)+M(111)}, increased in the following order: MFM w/o < MFM B-ZrO2 < MFM T-ZrO2 < MFM D-ZrO2. Therefore, the top- and bottom-ZrO2 layers play an important role as nucleation layers for the crystallization of the HZO film, resulting in a larger relative ratio of O/T/C phases in the ferroelectric film compared to w/o. Moreover, these results indicate that the top-ZrO2 layer was more effective to form the ferroelectric phase compared to the bottom-ZrO2 layer.
Next, two types of MFS capacitors of TiN/HZO/Si (MFS w/o) and TiN/top-ZrO2/HZO/Si (MFS T-ZrO2) were fabricated by low-temperature processes at 300°C of ALD and post-metallization annealing (PMA) for the FeFET applications [6]. The thicknesses of both HZO and ZrO2 films were 10 nm. Both MFS w/o and MFS T-ZrO2 were found to form an extremely thin SiO2 interfacial layer with a thickness of one or two monolayers between the HZO film and Si substrate due to a low temperature fabrication process of 300°C. The HZO film of the MFS T-ZrO2 formed O/T/C phases even with a low thermal budget of 300°C, while that of the MFS w/o had an amorphous structure. This result is attributed to the beneficial role of the nanocrystalline top-ZrO2 nucleation layer for the crystallization of an amorphous HZO film during the PMA process. Therefore, a higher 2P
r value of 15 µC/cm2 was obtained for the MFS T-ZrO2 than that (2.2 µC/cm2) for the MFS w/o. Moreover, the endurance properties of the MFS T-ZrO2 were free from the wake-up effect and exhibited less degradation of switching polarization (P
sw). This could be attributed to the insertion of a ZrO2 film at the TiN/HZO interface, which promoted the preferential formation of the ferroelectric orthorhombic phase and prevent the formation of oxygen vacancies at the ZrO2/HZO interface. Thus, we concluded that superior ferroelectricity with wake-up free properties and higher fatigue resistance of HZO-based MFS capacitors were achieved by using the ZrO2 nucleation layer technique.
These results suggest that the fabrication technique of ferroelectric HZO films using nanocrystalline ALD-ZrO2 nucleation layers is one of the promising processes for the next-generation non-volatile memory device applications.
This work was supported by JSPS KAKENHI (Nos. JP21J01667, JP20H02189, and JP18J22998) and MEXT Leading Initiative for Excellent Young Researchers (No. JPMXS0320220213).
[1] T. Mikolajick et al., J. Appl. Phys. 129, 100901 (2021).
[2] S. J. Kim, et al., Appl. Phys. Lett. 111, 242901 (2017).
[3] S. Migita et al., Jpn. J. Appl. Phys. 58, SBBA07 (2019).
[4] T. Onaya et. al., Appl. Phys. Express. 10, 081501 (2017).
[5] T. Onaya et al., APL Mater. 7, 061107 (2019).
[6] T. Onaya et al., APL Mater. 10, 051110 (2022).