bluuebunny/crossref_metadata_2025_split huggingface dataset:
High-Precision Pulse Reflectometry-Based Fault Localization Approach for Advanced Chip Package Failures
Authors: Zhang Chuan , Aguada John 
Published: November 2023

Abstract
For decades, device scaling has been the primary driver of the performance boost in integrated circuit (IC) devices. However, this trend has slowed down in recent years due to physical limitations and technical challenges. To continue meeting the ever-increasing demand for high-performance computing, other innovations such as advanced transistor designs and packaging schemes have emerged. Advanced transistors, such as FinFETs and Gate-all-around FET (GAAFETs), have been developed to overcome the limitations of traditional planar transistors, offering higher performance and energy efficiency. Meanwhile, advanced packaging schemes, such as system-in-package (SiP), 2.5D, and 3D packaging, offer higher integration densities, improved thermal management, and faster data transmission. These innovations are crucial in driving the development of high-performance computing, and they will play an essential role in meeting the growing demand for faster and more efficient computing.
Voltage Free Failure Analysis of Sub-15nm DRAM Gate Insulator Breakdown based on Thermal Laser Stimulation
Authors: Kim Chae Soo , Jeon Bohyeon , Byeon Chiheon , Yew Seungchul , In Lee Dong , Park SeGuen , Ban Hyodong 
Published: November 2023

Abstract
We propose an unbiased electrical fault isolation methodology for locating gate oxide breakdown failures in MOSFETs. The test vehicle involves a sub-15nm technology DRAM device which failed due to time-dependent dielectric breakdown (TDDB). This methodology introduces an implementation of Optical Beam Induced Resistance Change with no applied external bias (zero input voltage). From OBIRCH analysis, a change in current was achieved near failure site. This principle was explained based on Seebeck effect and equivalent circuit modeling of the MOSFET drain within Seebeck generator. A physical cross section using the Focused Ion Beam (FIB) revealed a gate oxide breakdown along the location of the OBIRCH spot, illustrating the benefit of an unbiased fault isolation to preserve the failure mechanism. This study proves that gate oxide breakdown site can still be located even with no external voltage applied, preserving the device condition of nanoscale DRAM, and eliminating the chances of altering the failure mechanism as a result of the applied external voltage stress.
Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB
Authors: Bonifacio C.S. , Ray M.L. , Fischione P.E. , Yu Y. , Skowronski M. 
Published: November 2023

Abstract
Advanced memory technologies are in demand with phase change memory (PCM) devices as a forefront candidate. For successful characterization by transmission electron microscopy (TEM) for failure analysis and device development, an accurate and controllable thinning of TEM specimens is critical. In this work, TEM specimens from a GeTe-based PCM device at a partial SET state were prepared using a Xe plasma focused ion beam (pFIB) and polished to electron transparency using Ar ion beam milling. We will highlight the differences between Ga focused ion beam (FIB) and Xe pFIB TEM specimen preparation, the benefits of post-pFIB Ar ion beam milling, and show TEM results of the effects of partial SET programming of the GeTe PCM device.
Techniques for Preparation of Damage-Free Ultrathin Cross-Section TEM Samples from Planar TEM Samples
Authors: Levenson Jacob , Subramanian Swaminathan , Ly Khiem , Chrastecky Tony 
Published: November 2023

Abstract
As integrated circuit (IC) feature dimensions have shrunk, the need for precise and repeatable sample preparation techniques has increased. In this work, the process of preparation of ultrathin planar-to-cross-section conversion transmission electron microscopy (TEM) samples using a gallium dual-column focused ion beam (FIB)/scanning electron microscope (SEM) system is examined. Sample preparation technique in this paper is aimed at repeatably isolating features in the 5-30 nm range, while limiting common issues such as amorphization, lamella warpage, and the curtain effect (or “curtaining”). This can be achieved through careful selection of FIB parameters including ion beam energy, ion beam current, stage tilt, and deposited protective layer materials and thicknesses, which are all discussed in this work.
Electrons Vs. Photons: Assessment of Circuit’s Activity Requirements for E-Beam and Optical Probing Attacks
Authors: Amini Elham , Kiyan Tuba , Renkes Lars , Krachenfels Thilo , Boit Christian , Seifert Jean-Pierre , Jatzkowski Jörg , Altmann Frank , Brand Sebastian , Tajik Shahin 
Published: November 2023

Abstract
Contactless probing methods through the chip backside have been demonstrated to be powerful attack techniques in the field of electronic security. However, these attacks typically require the adversary to run the circuit under specific conditions, such as enforcing the switching of gates or registers with certain frequencies or repeating measurements over multiple executions to achieve an acceptable signal-to-noise ratio (SNR). Fulfilling such requirements may not always be feasible due to challenges such as low-frequency switching or inaccessibility of the control signals. In this work, we assess these requirements for contactless electron- and photon-based probing attacks by performing extensive experiments. Our findings demonstrate that E-beam probing, in particular, has the potential to outperform optical methods in scenarios involving static or low-frequency circuit activities.
Lock-in Thermography for the Localization of Security Hard Blocks on SoC Devices
Authors: Kögel Michael , Brand Sebastian , Große Christian , Altmann Frank , Selmke Bodo , Zinnecker Kilian , Hesselbarth Robert , Kabakci Nisha Jacob 
Published: November 2023

Abstract
Localizing security-relevant hard blocks on modern System-on-Chips (SoCs) for physical attacks, such as sidechannel analysis and fault attacks, has become increasingly time-consuming due to ever-increasing chip-area and - complexity. While this development increases the effort and reverse engineering cost, it is not sufficient to withstand resolute attackers. This paper explores the application of camera-based lock-in thermography (LIT), a nondestructive testing method, for identifying and localizing security hard blocks on integrated circuits. We use a synchronous signal to periodically activate security-related functions in the firmware, which causes periodic temperature changes in the activated die areas that we detect and localize via an infra-red camera. Using this method, we demonstrate the precise detection and localization of security-related hard blocks at the die level on a modern SoC.
Mapping Conductivity and Electric Field in an AlGaAs HEMT with STEM EBIC
Authors: Hubbard William A 
Published: November 2023

Abstract
The operation of modern semiconductor components often relies on nanoscale electronic features emerging from complicated device architectures with finely tuned composition. While the physical structure of these devices may be straightforward to image, the resulting electronic characteristics are invisible to most high-resolution imaging techniques. Here we present electron beam-induced (EBIC) imaging in the scanning transmission electron microscope (STEM) as a high-resolution imaging technique with electronic-based contrast for characterizing complex semiconductor devices. Here, as an example case, we discuss the preparation and imaging of a STEM EBIC-compatible cross section extracted from a commercial AlGaAs high electron-mobility transistor (HEMT). The device exhibits low surface leakage, as measured via electrical testing and STEM EBIC conductivity contrast. The EBIC signal in the active layer of the device is mostly confined to the InGaAs channel, indicating that the electronic structure is largely preserved following sample preparation.
Nanoprobing for Logical Cell Operational Tests
Authors: Long Branden , Su Yang , Wang Yunfei , Morgan Christopher , Kabir Md Faisal , Padmanaban Ramya , Hearne Weston , Daniel Tad 
Published: November 2023

Abstract
We have identified a method for nanoprobing CMOS circuits at MHz frequencies using the same hardware already used for single transistor pulsing applications. In this paper we show example responses and failure isolation examples for both sequential and combinational logic cells and discuss the test setup and sample prep that were used to successfully collect the responses.
Advances in EFA with Color Coded Multi-Channel Nanoprobing
Authors: Moldovan Grigore , Courbat William , Jatzkowski Jörg 
Published: November 2023

Abstract
Key improvements to data acquisition, visualization and analysis are presented for Electrical Failure Analysis (EFA). Multi-channel image acquisition is introduced, where every nanoprobe is used for simultaneous imaging, in combination with color coding either by probe or by current. This new approach improves visualization of new device technologies with increasing three-dimensional complexity, in particular for overlapping structures and fields. Further, this new multichannel method opens opportunities for image mixing to improve data quality and signal interpretation.
Finite Element Analysis (FEA) and Fractography : Complementary Methods in Understanding the Factors Resulting to Hairline Die Crack on Chip-On-Lead (COL) Devices
Authors: Cajita Melanie , Dechino Renald , Javien Marionne , Villafranca Nico Deus 
Published: November 2023

Abstract
Several failures in Chip-On-Lead (COL) package from the customer were returned for Failure Analysis (FA). Containment activities were able to find similar failures. The connectivity of the silicon die to the leads uses gold wire. The die is in live bug position with respect to the package and is being held in place using non-conductive die attach epoxy. The identification of the Failure Mechanism (FMECH) utilized analysis flow involving non-destructive and destructive FA techniques. A hairline crack was found on the die between the two (2) corner pins. Based on lot history reviews, hairline die crack had a very low detectability at electrical test. Further collaboration with the process owners showed the need to identify the crack initiation, propagation and the factors that could result to this FMECH. Analysis of fracture or fractography was utilized in identifying the crack initiation point and propagation. Due to low detectability, identifying the factors resulting to die crack would require several evaluations and process mappings. Finite element analysis (FEA) was utilized to create models and simulation to identify factors that would result to highly stressed area identified through fractography. These additional data for the hairline crack were vital on the identification of root cause and formulation of corrective/preventive actions.
GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy
Authors: Fouchier Marc , Monachon Christian , Davies Matthew 
Published: November 2023

Abstract
This work reviews the capabilities of cathodoluminescence spectroscopy to monitor several key performance indicators in GaN-based High Electron Mobility Transistors (HEMTs) manufacturing. In particular, high throughput threading dislocation (TD) density measurements in the 108-109 cm-2 range are presented, together with dislocation type discrimination capabilities. Beyond these applications, other relevant topics such as buried AlGaN layers composition and Mg dopant concentration for normally off devices are introduced.
SiC MOSFET Micro-Explosion Due to a Single Event Burnout: Analysis at the Device and Die Levels
Authors: Coq Germanicus Rosine , Phulpin Tanguy , Rogaume Thomas , Niskanen Kimmo , Froissart Sandrine , Latry Olivier , Michez Alain , Lüders Ulrike 
Published: November 2023

Abstract
For device qualification in harsh environments (space, avionic and nuclear), radiation testing identifies the sensitivity of the devices and technologies and allows to predict their degradation in these environments. In this paper, the analysis of the electrical characteristics and of the failure of a commercial SiC MOSFET after a Single Event Burnout (SEB) induced by proton irradiation are presented. The goal is to highlight the SEB degradation mechanism at the device and die levels. For failed devices, the current as a function of the drain-source bias (VDS) in off-state (VGS=0V) confirms the gate rupture. For the die analysis, Scanning Electron Microscopy (SEM) investigations with energy-dispersive X-ray spectroscopy (EDX) analysis reveals the trace of the micro-explosion related to the catastrophic SEB inside the SiC die. With a fire examination, similar to a blast, the SEM analysis discloses damages due to the large local increase of the temperature during the SEB thermal runaway, leading to the thermal decomposition of a part of the SiC MOSFET and the combustion with gaseous emissions in the device structure.
Cell-Aware Test Integration Towards Achieving 0 DPPB on Automotive Designs
Authors: Ramesh Saidapet , Krishnamurthy Nikila , Jha Siddharth , Loh Jun Keat , Clark Gary S. , Ling CP 
Published: November 2023

Abstract
Traditional fault based scan ATPG stuck-at, transition-delay and small-delay defect and custom multi-transition fault model based patterns have been used as the primary DFT scan test content for many years to guarantee zero defects on automotive designs. Continued analysis to reduce DPPB on multiple automotive designs confirmed presence of subtle cell-internal defects that were not getting screened out using the traditional set of fault model based patterns and, motivated us to evaluate and integrate defect-oriented cell-aware tests on automotive designs. In this paper, we will first discuss the cell-aware pattern generation flow followed by the enhanced test program flow that was used to screen and identify unique cell-aware only failures from a new product introduction design. Later, we will review the deep-dive findings from the first unique cell-aware failure on a new design. ATE silicon characterization, failure analysis findings and ATPG simulation along with CMOS transistor level explanation of how cell-aware transition-delay patterns were more effective in screening out the defective unit when compared to traditional transitional-delay patterns will be discussed in detail.
Innovation in Copper Bond Wire Package Immersion Decapsulation Technique for Stressed Soic Products
Authors: Beboso Eugene , Yabut Brian , Balabbo Rona , Masiris Mac 
Published: November 2023

Abstract
This study presents a revolutionary methodology in an otherwise tedious and inconsistent manual decapsulation process of copper-wired small outline integrated circuit (SOIC) plastic package. The author explains how the consistency was achieved by adopting important changes such as (1) application of the 1-volt electrochemical bias, (2) optimization of etching solution agitation at 3.5 RPM, and (3) adoption of a symmetrical stainless-steel cathode. With the power of consistency, the added benefit of the adoption changes is the correct measurement of wire bond integrity tests such as wire pull, wire diameter, and magnitude of etch. The paper also discusses additional improvements to address the issue of long cycle time via laser ablation.
Sample Preparation for Electron Microscopy Characterization (SEM and TEM) and Failure Analysis of Advanced Semiconductor Devices
Authors: Nowakowski Pawel , Bonifacio Cecile S. 
Published: November 2023

Abstract
Presentation slides for the ISTFA 2023 Tutorial session “Sample Preparation for Electron Microscopy Characterization (SEM and TEM) and Failure Analysis of Advanced Semiconductor Devices.”
In-situ Correlative AFM-SEM Characterization for Failure Analysis
Authors: Neuman Jan , Dao Radek , Novotný Ondřej , Schánilec Vojtěch , Hegrová Veronika , Strakoš Libor , Vystavěl Tomáš , Celano Umberto 
Published: November 2023

Abstract
Presentation slides for the ISTFA 2023 Tutorial session “In-situ Correlative AFM-SEM Characterization for Failure Analysis.”
Fundamental Considerations in the Justification, Design, and Construction of an Analytical Laboratory for High Tech Imaging and Processing Tools
Authors: Herschbein Steven B. , Hartfield Cheryl , Wong Michael 
Published: November 2023

Abstract
Presentation slides for the ISTFA 2023 Tutorial session “Fundamental Considerations in the Justification, Design, and Construction of an Analytical Laboratory for High Tech Imaging and Processing Tools.”
IDENTIFIKASI KESULITAN BELAJAR PESERTA DIDIK DALAM PEMBELAJARAN FISIKA SECARA DARING PADA MASA PANDEMI COVID-19
Authors: Mastuti Mastuti , Nurlina Nurlina , Mutmainna Mutmainna 
Published: November 2023

Tujuan dari penelitian ini adalah untuk mengetahui faktor penyebab kesulitan yang dialami oleh peserta didik selama pembelajaran fisika secara daring pada masa pandemi Covid-19. Penelitian ini menggunakan penelitian kuantitatif dengan metode survei, teknik pengumpulan data melalui wawancara. Data yang didapatkan dianalisis secara deskriptif dengan jumlah populasi sebanyak 43 responden yang terdiri atas kelas XI IPA 1 dan IPA 2 dengan teknik pengambilan sampel menggunakan sampling jenuh. Hasil penelitian diperoleh bahwa kesulitan belajar dipengaruhi oleh dua faktor yaitu faktor eksternal dan internal. Faktor eksternal meliputi kepemilikan HP dan laptop, jaringan internet, dan penggunaan aplikasi sedangkan faktor internal meliputi kesulitan memahami materi, motivasi, dan tugas. Ditinjau dari faktor eksternal, seluruh peserta didik memiliki HP, namun masih terdapat kesulitan dalam mengunduh file karena penyimpanan penuh dan akses jaringan yang tidak optimal membuat peserta didik kurang bersemangat mengikuti pembelajaran serta penggunaan aplikasi yang berbeda-beda menghabiskan banyak kuota sementara faktor internal, peserta didik malas membaca lewat file karena HP memiliki tampilan layar yang kecil dan peserta didik kesulitan mengerjakan tugas yang terlalu banyak. Sedangkan ditinjau dari faktor eksternal berdasarkan gender, peserta didik laki-laki cenderung mengalami kesulitan mengunduh file, cenderung peserta didik perempuan mengalami kesulitan belajar terkait kuota dan jaringan, peserta didik perempuan lebih unggul menggunakan aplikasi sementara ditinjau dari faktor internal, peserta didik laki-laki cenderung mengalami kesulitan memahami materi, peserta didik laki-laki lebih mematuhi aturan serta dalam mengerjakan tugas peserta didik perempuan lebih unggul.
ANALISIS PENGELOLAAN STANDAR ORGANISASI DAN PERSONALIA LABORATORIUM DI SMAN 1 GENTENG BANYUWANGI
Authors: Putri Miftahul Gea Alivia , Nafisah Nisrina , Putri Miftahul  Gea Alivia , Nafilla Vina Zulviana , Cahayati Era , Indriyani Amalia Rosyida , Nuraini Lailatul , Harijanto Alex 
Published: November 2023

Penelitian ini bertujuan untuk mengetahui standarisasi dan pengelolaan laboratorium fisika di SMA Negeri 1 Genteng. Jenis penelitian yang digunakan adalah penelitian kualitatif deskriptif. Penelitian ini dilakukan secara langsung dengan wawancara serta observasi di SMA Negeri 1 Genteng. Instrumen penelitian yang digunakan adalah angket berisi pertanyaan tentang standar fasilitas labortorum dan mekanisme praktikum. Hasil penelitian menunjukkan bahwa standarisasi laboratorium fisika di SMA Negeri 1 Genteng yang berkaitan dengan ruang laboratorium fisika, struktur organisasi dan administrasi, pengelolaan, peralatan keselamatan kerja, serta mekanisme pelaksanaan praktikum memiliki klasifikasi baik. Untuk standarisasi tempat penyimpanan, perlatan, dan bahan praktikum memiliki klasifikasi sangat baik. Sehingga dapat dikatakan bahwa laboratorium fisika SMA Negeri 1 Genteng temasuk kategori standarisasi yang baik.
The Application of Blended Learning Model to Improve Student Learning Outcomes in Parts of the Body Material for Grade V Students During the Pandemic
Authors: Meliyana Atika , Maulana Muhammad Azka 
Published: November 2023

The aim of this study was to determine student learning outcomes on vocabulary mastery inmaterial parts of the body by applying blended learning model. This study used a quantitative method of independent sample t test with an experimental design. The population in this study amounted to 24 students in two groups, namely the experimental group which was treated with the learning model blended learning and the control group was given thetreatment face-to-face learning. The data used in this study came from the results of the pre-test and post-test, then analyzed by t-test. After the research data was collected and analyzed, the results showed that compared to the control group, the students in the experimental group had a significantly better understanding. This showed that the use of learning methods blended learning can effectively improve student learning outcomes towards mastery ofvocabulary parts of the body.

Keywords: Learning outcomes; blended learning; parts of the body
Enhancing Salt Stress Tolerance and Yield Parameters of Proso Millet Through Exogenous Proline and Glycine Betaine Supplementation
Authors: Alam MM , Hasanuzzaman M 
Published: November 2023

Proline (Pro) and glycine betaine (GB) act as significant osmoprotectants, potentially mitigating the detrimental effects of various abiotic stresses in plants. Given the growth-enhancing capabilities and other regulatory roles of Pro and GB, the current study was conducted to assess their function in imparting salt stress resilience in proso millet (Panicum miliaceum L). Proso millet plants were subjected to two levels of salt stress (S1 = 150 mM; S2 = 300 mM). Foliar applications of Pro (0.5 mM) and GB (0.5 mM) were provided under control and salt-stressed conditions at 10-day intervals twice. Compared to control conditions, plant growth, fresh and dry weight, leaf relative water content (RWC), SPAD value, and yield-contributing attributes noticeably decreased under salt stress. In contrast, plants supplemented with Pro and GB exhibited enhanced characteristics. Moreover, growth and yield parameters improved in salt-treated proso millet plants when supplemented with Pro and GB. These results suggest that the foliar application of Pro and GB can alleviate salt-induced oxidative stress in proso millet plants by modulating the antioxidative defense.
Bangladesh Agron. J. 2023, 26(1): 75-83
Determination of Economic Nitrogen Rate for Transplanted Aus Rice Varieties of Bangladesh
Authors: Akter Munmun , Bhuiyan Md Khairul Alam , Masum Sheikh Muhammad 
Published: November 2023

A field experiment was conducted at the Agronomy field, Bangladesh Rice Research Institute, Gazipur, Dhaka, from April to September 2019 to determine the economic nitrogen rates for popular transplanted Aus varieties. The experiment was carried out in a randomized complete block design (RCBD), with two factors. Factor A: three varieties as- BR26, BRRI dhan48, and BRRI dhan82; and Factor B: five levels of nitrogen rates as- 0, 40, 60, 80, 100 kg ha−1. The experimental data show the individual effect of variety and nitrogen (N) rate was significant in the case of N concentration, N uptake in grain and straw, and nitrogen harvest index (NHI). Overall, increasing N rate increases grain and straw's concentration irrespective of varieties. But higher N concentration and uptake were observed in the N rate of N60-N100 kg ha−1 in all varieties. Among the varieties, BRRI dhan82 observed higher N uptake (61.23 kg ha−1) in grain. Higher total N uptake was also observed in BRRI dhan48 at 80 kg N ha−1. NHI ranged from 55 to 72 % in different N levels, indicating 55 to 72% of the absorbed N translocated to the grains, and 45% to 32% remained in the dry matter within varieties. The estimated economic nitrogen dose for maximum yield was determined by regression analysis, and found that N rates of BR26, BRRI dhan48, and BRRI dhan82 were 97, 95, and 55 kg ha−1, respectively. The findings of this study indicated that the response of different N rates on three Aus varieties was linear up to 80 kg N ha−1 might be owing to better N uptake that made yield increase after that decreasing.
Bangladesh Agron. J. 2023, 26(1): 84-95