bluuebunny/crossref_metadata_2025_split huggingface dataset:
Modern management of respiratory failure due to pulmonary mycoses following allogeneic hematopoietic stem‐cell transplantation
Authors: Koldehoff Michael , Zakrzewski Johames L. 
Published: May 2005

AbstractPulmonary mycoses count among the most dangerous complications in allogeneic hematopoietic stem cell transplantation. Despite the establishment of antifungal chemoprophylaxis and empirical antifungal treatment, they frequently lead to respiratory failure and are still associated with an extraordinarily poor prognosis. However, the emergence of new antimycotics with alternative mechanisms of actions and decreased toxicity in combination with the development of new non culture‐based diagnostic techniques may allow earlier, more aggressive and more effective antifungal treatment approaches. In addition, the optimized use of new technologies designed to augment spontaneous breathing efforts by patients, mechanical ventilation, as well as the advantages of early tracheostomy lead us to expect better outcomes in the treatment of respiratory failure due to pulmonary mycoses following allogeneic hematopoietic stem cell transplantation. Am. J. Hematol. 79:158–163, 2005. © 2005 Wiley‐Liss, Inc.
Waldenström macroglobulinemia: A review of therapy
Authors: Gertz Morie A. 
Published: May 2005

AbstractWaldenström macroglobulinemia is a rare monoclonal gammopathy‐associated lymphoplasmacytic lymphoma. Its incidence is only 4 per million per year. This review contains the known published literature specifically on the available management tools for Waldenström macroglobulinemia and is designed to assist clinicians in making management decisions for patients with this uncommon disorder. Am. J. Hematol. 79:147–157, 2005. © 2005 Wiley‐Liss, Inc.
Congenital methemoglobinemia caused by Hb‐MRatnagiri (β‐63CAT→TAT, His→Tyr) in an Indian family
Authors: Kedar Prabhakar S. , Nadkarni Anita H. , Phanasgoankar Supriya , Madkaikar Manisha , Ghosh Kanjaksha , Gorakshakar Ajit C. , Colah Roshan B. , Mohanty Dipika 
Published: May 2005

AbstractHb‐M is a very rare hemoglobinopathy in the Indian subcontinent. We report a family with Hb‐M with lifelong cyanosis from the Ratnagiri district in western India. The propositus was a 11‐year‐old female child with a history of increasing cyanosis exacerbated by fever and weakness. Similar complaints were also noted in her mother and five maternal family members. There was no history of cardiac illness or exposure to drugs and chemicals. The methemoglobin level was 39.3% in the propositus and 21.1% in her mother with normal NADH‐methemoglobin reductase activity. Abnormal absorption peaks by spectroscopic analysis, presence of hemoglobin instability, and a slow‐moving band on starch gel electrophoresis supported the presence of Hb‐M. Automated DNA sequence analysis of the β globin gene showed a C→T substitution at codon 63. This leads to a substitution of histidine (CAT) by tyrosine (TAT) at the β 63 (E7) position, similar to Hb‐M Saskatoon. We have named this variant as Hb‐MRatnagiri. Am. J. Hematol. 79:168–170, 2005. © 2005 Wiley‐Liss, Inc.
The preparation of (Al2O3)x(SiO2)y thin films using [al(OSiEt3)3]2 as a single‐source precursor
Authors: Landry Christopher C. , Cheatham Linda K. , Macinnes Andrew N. , Barron Andrew R. 
Published: May 2005

AbstractAmorphous (Al2O3)x(SiO2)y thin films have been grown by atmospheric pressure metal‐organic chemical vapour deposition using the single‐source precursor [Al(OSiEt3)3]2. Characterisation by X‐ray photoelectron spectroscopy indicated that the films consisted of a mixture of Al2O3, SiO2 and an aluminosilicate. The relative amount of each species was dependent on the deposition temperature and the carrier gas composition. Use of NH3 as the carrier gas resulted in the increased volatility of the precursor by the in situ formation of the low‐melting Lewis acid–base adduct Al(OSiEt3)3(NH3); however, no nitrogen incorporation was observed in these deposited films.
Electrical breakdown and recovery in rectifying m | lb | m structures
Authors: Martin A. S. , Sambles J. R. , Ashwell G. J. 
Published: May 2005

AbstractMetal 1 | C16H33–Q3CNQ LB film | metal 2 structures exhibiting asymmetric, non‐linear I/V characteristics have been fabricated using the Langmuir–Blodgett (LB) technique with LB film thicknesses as small as a single monolayer. When such junctions are subjected to low biases, the I/V traces exhibit little or no asymmetry, but as the applied biases increase, so the I/V asymmetry becomes more evident. The largest applied voltages before breakdown are of the order of 1 V, which represents an E‐field of order 108 V m−1. This breakdown under high biases increases the junction conductance and the I/V traces become very noisy. More interestingly, it has been observed that after such breakdown it is possible for the junction to recover on reduction of the bias. It is observed that recovery is not always immediate and may require several voltage sweeps. A subsequent increase in bias will cause breakdown at the same bias as the first breakdown, indicating that no permanent damage has been caused.
Cathodoluminescence wavelength imaging for spatial mapping of excitons bound to dislocations and structural defects in cds
Authors: Hoffmann A. , Christen J. , Gutowski J. 
Published: May 2005

AbstractBy means of the unique technique of cathodoluminescence wavelength imaging we analyse the distribution and nature of dislocations in strain‐distorted CdS by scanning the spatial pattern of a set of lines due to excitons bound to dislocation‐related defects. The method is demonstrated to be most powerful for the study of dislocations in II–VI and other materials which play a crucial role in hetero‐epistructures.
Reactions of GaX3 (x  br, i) with AS(SiMe3)3; crystal structures of I3Ga · as(SiMe3)3 and [I2GaAS(sime3)2]2
Authors: Johansen James D. , McPhail Andrew T. , Wells Richard L. 
Published: May 2005

AbstractReactions of GaX3 (X  Br, I) with As(SiMe3)3 in 1:1 and 2:1 mole ratios were investigated. For the latter reactant stoichiometry, substances having the empirical formulae AsBr3Ga2 (1) and Asl3Ga2 (2), the analogues of the previously reported single‐source GaAs precursor (AsCl3Ga2)n, were isolated as yellow isolated as yellow insoluble powders. Low‐temperature reactions in a 1:1 mole ratio resulted in the isolation of the adducts Br3Ga.As(SiMe3)3 (3) and I3Ga.As(SiMe3)3 (4). On the other hand, at room temperature the GaBr3 reaction resulted in a complex mixture from which no characterizable compounds were isolated, whereas the Gal3 reaction afforded the crystalline compound [I2GaAs(SiMe3)2]2 (5). The structures of 4 and 5 were elucidated by complete single‐crystal X‐ray analysis (crystal data: 4, monoclinic, space group P21/c, a = 16.497(2) Å, b = 9.629(1) Å, c = 16.658(2) Å, β = 113.21(1)°, V = 2432(1) Å3, Z = 4; 5, orthorhombic, space group Pbca, a = 14.279(2) Å, b = 17.509(2) Å, c = 13.818(2), Å, V = 3455(1) Å3, Z = 4).
Mesomorphic stilbazole complexes of silver(I) with triflate and nitrate counter‐anions
Authors: Bruce Duncan W. , Dunmur David A. , Hudson Sarah A. , Maitlis Peter M. , Styring Peter 
Published: May 2005

AbstractReaction of AgX (X  NO3 or CF3SO3) with two equivalents of 4‐alkyloxystilbazole leads to the mesomorphic silver(I) complexes [Ag(n‐OPhVPy)2] [X] in high yield. The long‐chain homologues of each series show SA and SC mesophases, while for shorter chain lengths the nitrate salts show only an SA phase and the triflate salts only a nematic phase. The phase behaviour of these new complexes is discussed in relation to analogous complexes with different counter‐anions or ligands.
Characterization of ZnS grown by metal‐organic chemical vapour deposition on GaAs(100) using t‐butyl mercaptan and dimethylzinc
Authors: Armitage D. N. , Yates H. M. , Williams J. O. , Cole‐hamilton D. J. , Patterson I. L. J. 
Published: May 2005

AbstractZnS has been grown on GaAs(100) substrates by atmospheric pressure metal–organic chemical vapour deposition (MOCVD) using dimethylzinc (DMZn) and t‐butyl mercaptan (t‐BuSH). The effects of the reactant gas phase molar ratio and the growth temperature on the characteristics of the material grown have been investigated. The structural quality of the layer is demonstrated by X‐ray rocking curve half‐widths of less than 300 arcsec for the epilayers. There is little significant pre‐reaction and the layers are of excellent surface morphology and layer uniformity.
Excimer laser projection etching of copper foils in chlorine gas
Authors: Dyer P. E. , Greenough R. D. , Key P. H. 
Published: May 2005

AbstractLow‐fluence XeCl laser etching of copper foils in a chlorine environment has been studied. The etch rate is fluence‐dependent in the range 0.05–1.0 J cm−2 and is governed by the growth characteristics of the chloride layer formed in the interpulse period. Projection etching with good pattern reproduction and resolution for high‐aspect‐ratio features is demonstrated.
Metal–Organic chemical vapour deposition (mocvd) growth utilising cu(acac)2 (acac  pentane‐3, 5‐dionato) as a source for copper‐containing materials: Influence of carrier gas on surface morphology
Authors: Rees William S. , Caballero Celia R. 
Published: May 2005

AbstractThe unsubstituted bis‐β‐diketonato complex of copper, Cu(acac)2 (acac  pentane‐3, 5‐dionato), has been used to deposit both elemental copper and copper oxide thin films by metal–organic chemical vapour deposition (MOCVD). For all Cu(II) bis‐β‐diketonates, growth of oxygen‐free layers requires the breakage of four copper–oxygen bonds present in the precursor. The influence of carrier gas composition on deposit morphology has been examined for six parameter sets: both hydrous and anhydrous streams, each for reducing (H2), inert (Ar) and oxidising (O2) environments.
Theory of molecular optoelectronics. X: Calculations for MBANP and NMBA
Authors: Munn R. W. , Smith S. P. B. 
Published: May 2005

AbstractComponents of the crystal quadratic susceptibility tensor x(2) for second‐harmonic generation are calculated for the title compounds 2‐(α‐methyl benzylamino)‐5‐nitropyridine (MBANP) and 4‐nitro‐4'‐methyl(benzylidene aniline) (NMBA). Input data are the crystal structure and refractive indices and CNDO hyperpolarizabilities. The calculations also yield effective polarisabilities and local electric fields. Susceptibility components reach 66 pm V−1 in MBANP and 27 pm V−1 in NMBA in the crystal axes; agreement with experiment is poor for MBANP but satisfactory for NMBA. These features seem to reflect the better defined charge transfer axis in NMBA. Screened dipole–dipole interactions calculated from CNDO dipole moments stabilise MBANP by 70 kJ mol−1 and NMBA by 20 kJ mol−1 and imply permanent electric fields of a few GV m−1.
Hole transport in p‐diethylamino‐benzaldehyde‐diphenyl hydrazone
Authors: Borsenberger P. M. 
Published: May 2005

AbstractHole mobilities have been measured in vapour‐deposited films of p‐diethylamino‐benzaldehyde‐diphenyl hydrazone (DEH). The results are described by a model based on hopping through a manifold of sites broadened by energetic and positional disorder. The application of the model leads to the conclusion that the width of the density of hopping states is influenced by dipolar disorder due to dipole moments of the DEH molecules. In comparing the results with those observed in other molecular solids, the degree of positional disorder is shown to be relatively small.
Stable and volatile β‐diketonate complexes of copper, calcium, strontium, barium and yttrium for use as chemical vapour deposition precursors
Authors: Thompson Simon C. , Cole‐hamilton David J. , Gilliland Douglas D. , Hitchman Michael L. , Barnes John C. 
Published: May 2005

AbstractThe new β‐diketone 1,1,1,2,2,3,3,7,7,8,8,9,9,9‐tetradecafluorononane‐4,6‐dione (HTDFND) has been prepared and employed in the formation of complexes of Cu, Ca, Sr, Ba and Y. Complexes of the same metals derived from the β‐diketone 1,1,1,2,2,3,3,7,7,7‐decafluoroheptane‐2,4‐dione (HDFHD) have also been prepared. In general the compounds have the formula [M(TDFND)2H2O] or [M(DHFD)2H2O], although the yttrium complexes are [Y(β‐diket)3] · xH2O (β‐diket ≡ TDFND (x = 3) or DFHD (x = 2)). The complexes have been characterised by analytical and spectroscopic means and by a crystal structure of [Cu(TDFND)2EtOH] obtained by recrystallisation of [Cu(TDFND)2H2O] from aqueous ethanol. Crystal data for [Cu(TDFND)2EtOH]: triclinic, P̄1, a = 11.249(4) Å, b = 12.331 (2) Å, c = 12.890(2) Å, α = 96.89(2)°, β = 108.93(3)°, γ = 109.63(3)°, V = 1541.54 Å3, Z = 2. The complex is square pyramidal with the four oxygen atoms of the β‐diketonates occupying the basal sites and the oxygen atom of the co‐ordinated ethanol molecule in the apical position. The C3F7 ligands take up an extended staggered configuration in order to minimise steric repulsions. The complex is monomeric with intermolecular distances all greater than 4 Å. Simultaneous thermal analysis at 1 atm reveals that all the compounds lose water but then sublime, usually completely without decomposition. [Ba(TDFND)2H2O] is the first barium complex for which this is the case and it can be dehydrated to give [Ba(TDFND)2], which is also volatile but becomes less volatile with time. [Ba(TDFND)2H2O], [Sr(TDFND)2H2O] and [Ca(DFHD)2H2O] are suitable precursors for the growth of MF2 on silicon substrates. Complete orientation in the (111) direction is observed. Changes in the film growth rate with time for all the precursors are attributed to sample decomposition ([M(DFHD)2H2O], M ≡ Ca or Sr) or to slow reorganisation of the crystal structure ([Ba(TDFND)2H2O]). Layers with Y:Ba:Cu ratios close to the required 1:2:3 have been grown using [Y(DPM)3], [Cu(DPM)2] and [Ba(DFHD)2H2O] (DPM ≡ 2,2,6,6‐tetramethylheptane‐3,5‐dionato).
Room temperature synthesis of copper indium diselenide in non‐aqueous solution using an organoindium reagent
Authors: Hepp Aloysius F. , Andras Maria T. , Bailey Sheila G. , Duraj Stan A. 
Published: May 2005

AbstractReaction of triscyclopentadienylindium with cuprous selenide in 4‐methylpyridine at 25°C produces polycrystalline copper indium diselenide.
Oriented purple membrane multilayers of halobacteria fabricated by langmuir–blodgett and electrophoretic sedimentation techniques
Authors: Maximychev A. V. , Kholmansky A. S. , Levin E. V. , Rambidi N. G. , Chamorovsky S. K. , Kononenko A. A. , Erokhin V. V. , Checulaeva L. N. 
Published: May 2005

AbstractOrganised films containing oriented patches of purple membranes and consisting of 15–75 layers and approximately 1000 layers were fabricated by the Langmuir–Blodgett and electrophoretic sedimentation techniques respectively. ‘Surface pressure vs. molecular area’ isotherms for monolayers of purple membranes suspended in hexane and deposited on the air/water interface were studied. Circular dichroism and absorption spectroscopy were used to investigate the effect of an organic solvent on the chromophore binding site in the purple membranes. Kinetic methods based on flash excitation were employed to determine the influence of the film deposition conditions on the photoelectric response of bacteriorhodopsin and on the M412 intermediate relaxation. Structural characteristics for multilayers prepared from water and hexane purple membrane suspensions were determined by low‐angle X‐ray scattering. The influence of the layer deposition conditions on the electrical, physical and photoelectrical properties of ordered structures containing bacteriorhodopsin is discussed.
SnSSno2 conversion of chemically deposited SnS thin films
Authors: Nair P. K. , Nair M. T. S. , Campos J. , Sanchez A. 
Published: May 2005

AbstractThe thermal decomposition of chemically deposited SnS thin films to SnO2 films by air annealing at temperatures up to 400°C is discussed. The conversion of a 0.7 μm thick SnS thin film to an SnO2 film involves the creation of non‐stoichiometric SnS, SnS + SnS2 mixed phase and non‐stoichiometric SnO2 (i.e. SnO2  x), as concluded from X‐ray diffraction patterns, optical transmission spectra and electrical characteristics. The SnO2 thin films obtained in this manner are photoconductive, with a lowest sheet resistance (in the dark) of about 105 Ω/□ and an activation energy (Ea) of 0.1 eV for the electrical conductivity observed for the SnS films annealed at 325°C. This was found as the onset temperature for conversion of the SnS + SnS2 phase to the non‐stoichiometric SnO2 – x film. Elevation of the annealing temperature to 400°C results in an elevation of the sheet resistance to about 109 Ω/□ with the value of Ea at 1.3 eV, indicating an improvement in the degree of stoichiometry.
A new gas alarm device and integrated‐electrode‐type chemical sensor
Authors: Liu Jun , Weppner Werner 
Published: May 2005

AbstractA new gas alarm is presented which is based on solid electrolytes with high ionic conductivities. The operating principle of the device is the compensation of the cell voltage and measurement of the direction of the electrical current. Also, the general microelectronic circuit designs are discussed. Several advantages are found in comparison with other types of gas sensors.
Instability in electrical performance of organic semiconductor devices
Authors: Ostoja P. , Guerri S. , Impronta M. , Zabberoni P. , Danieli R. , Rossini S. , Taliani C. , Zamboni R. 
Published: May 2005

AbstractA field effect transistor (FET) has been fabricated with the hexamer of thiophene (α‐sexithienyl) in order to assess the performance of such electronic devices based on an organic material. Particular emphasis has been given to the determination of the origin of the instability in the electrical performance. From this study it is confirmed that charged species, possibly chemical impurities present in the processed material, can migrate through the film under an applied electric field, even at room temperature.
Microelectrode array device: Photolithographic fabrication and electrochemical characterisation
Authors: Dobson P. J. , Jiang L. , Leigh P. A. , Hill H. A. O. , Kaneko S. 
Published: May 2005

AbstractA new type of microelectrode array device has been developed using semiconductor‐processing techniques. An array of 15 × 15 square electrodes as small as 1 μm, spaced 100 μm apart, has been fabricated on a silicon chip of dimensions 1.5 × 1.5 mm2. Steady state electrochemistry was performed using these devices in both aqueous and non‐aqueous media.
Metal sulphide thin film photography with lead sulphide thin films
Authors: Nair P. K. , Gomezdaza O. , Nair M. T. S. 
Published: May 2005

AbstractMetal sulphide thin film (MSTF) photography based on photo‐accelerated chemical deposition (PACD) of PbS thin films is described. Here an intensity distribution over the surface of a growing PbS thin film produces a thickness variation (0.06–0.15 μm) of the film which, when viewed under daylight, yields a specularly reflective image. Under 800 W m−2 of solar radiation a bluish MSTF photographic image (0.15 μm film thickness) on a coppery‐bronze background (0.08 μm) is obtained in the PACD of PbS at the end of 25 min deposition when a high‐contrast photographic negative is used as the object. The best contrast of 0.46 in the PbS MSTF photography in the reflection mode is obtained under the above condition of exposure when the optical transmission in a photographic negative in the image area is ∽30% and that in the background is ∽1%. The contrast available in the transmission mode in the MSTF photographic image is considerably less: ∽0.28 (maximum) for optical transmission of 1% and 100% in the background and image areas of the photographic negative respectively.
Three‐Centre electron transfer as a frame for molecular switch phenomena
Authors: Hammerstad‐pedersen Ja N. M. , Kharkats Yurij I. , Sommer‐Larsen Peter , Ulstrup Jens 
Published: May 2005

AbstractMolecular three‐centre electron transfer (ET) systems contain an intermediate electronic bridge group state in addition to the donor and acceptor states. This feature is encountered in long‐range ET patterns of metalloproteins, in bacterial photosynthetic reaction centres, in electrochemical processes at modified metal electrodes and in hypothetical or real molecular shift register and photodiode device‐like systems. Overall ET is by superexchange when the intermediate group energy is high. When the energy is low enough that the state is temporarily populated, a range of vibrational features arise depending on the vibrational coupling and relaxation time of the intermediate state. In external fields these properties induce characteristic ‘switch’ effects reflected in rapid changes in the current derivatives and other features in the current–voltage relations. We provide a quantum mechanical frame for three‐centre ET in such molecular systems. The theory rests on second‐order perturbation theory. In contrast to most applications of superexchange concepts, the theory includes explicitly nuclear coupling in the intermediate state and is valid both for high energy superexchange and for low‐energy populated intermediate states. Moreover, mild, finite resonances arise in the transition regions between the various energy ranges represented by analytical rate constants. The theory is appropriate to the molecular electronic behaviour of several biological and synthetic three‐level ‘switch’ ET systems.
A rheological semiconductor
Authors: Bullough W. A. 
Published: May 2005

AbstractThe concept of high‐speed control of a mechanical process via electrical modulation of the flow of some kind of hydraulic cum semiconductor liquid is introduced. This is done in order to stimulate activity towards the provision of improved power transmission media for use in the formulation of intelligent tools and systems. A quantum leap in machine performance is the aim; flexibility of operation and motion‐switching speeds 10 times higher than presently available are in demand. Some information is given on the background and application aims of the concept. Brief state‐of‐the‐art information is presented on the front‐runner of enabling solutions to this industrial equivalent of recent innovations in information technology—the electrorheological fluid.
Compensation phenomena by ion implantation doping of an electroactive polymer, poly(para‐phenylene)
Authors: Le hüe C. , Moliton A. , Lucas B. , Froyer G. 
Published: May 2005

AbstractWe have shown that poly(para‐phenylene) (PPP) can be obtained either n‐type or p‐type by ion implantation at low energy (E ≦ 50 keV); PPP is primarily an insulator pellet obtained from compacted powder synthetised by the Kovacic method. To compare with the chemical doping effect, we have studied the conductivity and thermopower of PPP samples after two successive ion implantations with Cs+ and I+.The experimental results show that we clearly obtain reversible doping only in the case of an initially I+‐doped sample: the thermopower sign is changed after a Cs+ implantation with a fluence equal to 3 × 1014 ions cm−2. In the other case (Cs+ initial implantation) we observe the change in thermopower sign at higher fluence (2 × 1016 I+ ions cm−2). This last effect can be attributed to a metal transition induced by the accumulation of defects in the material because of too high implantation parameters (graphitisation).