bluuebunny/crossref_metadata_2025_split huggingface dataset:
Some Physicochemical Parameters of Saturated Ternary Solutions of Systems with Mixed Crystals in their Solid Phase
Authors: Dejewska B. 
Published: January 2007

AbstractThe measurements of density (ϱ), viscosity (η) and hydration number (nh) of saturated solutions of ternary systems KClKBrH2O, K2SO4(NH4)2SO4H2O and KNO3NH4NO3H2O with mixed crystals in the solid phase have been conducted. It has been confirmed, that the occurence of the extremes on the curves of dependence of the properties (ϱ, η, nh) on the composition of saturated solution may be the base for the supposition that beside mixed crystals the double salts have also been formed in the solid phase of a given system.
New Temperature Control Apparatus for X‐ray Experiments
Authors: Kobayashi H. , Nakamura N. 
Published: January 2007

AbstractA temperature control apparatus for X‐ray experiments for organic compounds was newly designed. It is a gas furnace system equipped with a proportional integrated differential (PID) controller. In this study, a position sensitive proportional counter (PSPC) was used as a detector in order to make quick measurements. Using this apparatus, the long spacing of 1‐octadecanol was measured by the small angle X‐ray scattering (SAXS) method. The long spacings of 1‐octadecanol in the high temperature phase and the low temperature stable one were 48.7 and 41.7 Å, respectively. The result obtained was consistent with that reported. It was confirmed that the apparatus designed here operated properly for the temperature control of organic compounds in X‐ray experiments and was useful for the structural study on the phase transition of organic samples.
Crystal Structure of N‐methyl Crotananinium Iodide — A Pyrrolizidine Alkaloid
Authors: Sharma S. D. , Padmanabhan V. M. , Goswami K. N. , Gupta Vivek K. 
Published: January 2007

AbstractThe crystal structure of N‐methyl crotananinium iodide has been determined by X‐ray structure analysis. The compound crystallizes in the orthorhombic space group P212121 with cell parameters a = 19.37(2), b = 7.70(2), c = 13.38(2) Å. The structure has been solved by Patterson and successive Fourier methods and refined by full matrix least‐squares methods to an R‐index of 0.075. The structural features of the title compound are noted and are compared with those of similar others of such pyrrolizidine alkaloids.
Interrelations between Interionic Separation, Lattice Energy, and Plasma Energy for Alkali Halide Crystals
Authors: Reddy R. R. , Kumar M. Ravi , Rao T. V. R. 
Published: January 2007

AbstractA simple empirical relationship has been established for the estimation of lattice energies for alkli halide crystals directly from the values of interionic distances. Another new relation has also been proposed between the lattice energy and plasma energy. The calculated plasma energy values are utilized in the estimation of electronic polarizability in alkali halide crystals, in order to test the applicability of the proposed relations. Good agreement is observed between the computed and literature values of electronic polarizability. The merits of the present approach is discussed.
Optical Properties of MnIn2S2Se2 Single Crystals
Authors: Neumann H. , Sobotta H. , Haeuseler H. 
Published: January 2007

AbstractOptical transmittance and reflectance spectra of MnIn2S2Se2 single crystals are measured in the wavelength range from 0.5 to 30 μm. The interference method is used to determine the refractive index of the compound for wavelengths between 0.8 and 12 μm. From an analysis of the absorption spectrum it follows that the fundamental edge is due to forbidden indirect transitions between parabolic bands for the polarization E ⊥ c with a gap energy of 1.50 eV at room temperature.
Bi2Te3 Crystals Heavily Doped with Germanium Atoms
Authors: Lošt'ák P. , Novotný R. , Navrátil J. , Horák J. 
Published: January 2007

AbstractElemental Bi, Te, and Ge of 5N purity were used to prepare Bi2Te3(GeTe) single crystals with germanium content varying from 0 up to 2.3 × 1021 cm−3. The samples were characterized by reflectivity measurements in the plasma resonance frequency range and by measurements of the electrical conductivity. Germanium content in the samples was determined by means of energy dispersive analysis. The reflectivity spectra were interpreted on the basis of the Drude‐Zener theory in the aim to obtain information on the concentration of the free carriers in the samples. It was found that Ge atoms in the Be2Te3 crystal lattice behave as acceptors. A comparison of the hole concentration with the amount of germanium built into the crystal lattice revealed that only about 1/100 of the total number of Ge atoms act as acceptors. This effect is explained by two different ways of incorporation of Ge atoms into the Bi2Te3 lattice, viz: the formation of substitutional Ge'Bi defects acting as acceptors and the formation of seven‐layer‐lamellae of the TeBiTeGeTeBiTe composition, which corresponds to the structure of GeBi2Te4.
Nucleation of an MTG YBa2Cu3Oy
Authors: Grantscharova E. , Desgardin G. 
Published: January 2007

AbstractThe kinetics of the appearance of the superconducting 123 phase in partially melted at 1200 °C YBCO samples has been studied in the temperature range of low undercoolings from 1040 °C to 920 °C. An EDS analysis of the phases formed at different stages of the cooling of the melt has been performed and the experimental conditions for crystallization of 123 phase with finely dispersed 211 phase in it have been established. The results have been interpreted in terms of the classical theory of nucleation and they have been applied to the MTG process for formation of highly textured YBa2Cu3Oy materials.
Distribution of the gibbs activation energy for formation of a kink around the top of the growth hills of the face (001) of TGS single crystal
Authors: Bikov A. Z. , Stoichkov S. D. , Damianova S. B. 
Published: January 2007

AbstractThe shape of the vicinal hills of growth of the (001) face of the TGS single crystal was investigated by a laser Michelson interferometer. It was found that the distribution of the Gibbs activation energy for formation of a kink is not equivalent around the top of the hill.
Effect of the oxygen pressure during annealing on Tc and lattice parameter c of Bi‐2212 single crystals
Authors: Vlasov M. Yu. , Kaminskaya T. N. , Moshkin S. V. , Frank‐Kamenetskaya O. V. , Vyvenko O. F. , Kretser Yu. L. 
Published: January 2007

AbstractThe influence of oxygen partial pressure (po2 = 10−4–1.5 · 102 atm) during annealing on the Tc and lattice parameter c of Bi‐2212 single crystals has been investigated. Antibate correlation between non‐monotonous alteration of the c parameter and Tc with the increase in oxygen content has been revealed.
Influence of proton implantation on the properties of CuInSe2single crystals (I). Ion channeling study of lattice damage
Authors: Yakushev M. V. , Tomlinson R. D. , Neumann H. 
Published: January 2007

AbstractThe lattice damage of p‐type CuInSe2single crystals implanted with 10 keV protons in the fluence range from 2.5 · 1014to 8 · 1015cm−2was investigated using the Rutherford backscattering/channeling technique. At proton fluences up to about 2 · 1015cm−2radiation annealing of the defects is observed which is ascribed to very high defect concentrations in the unimplanted samples. At higher fluences radiation damage occurs but the concentration of radiation induced defects ramains low. There are indications that selenium interstitials or defect complexes with selenium interstitials involved are stable defects at room temperature.
On chemically vapour‐deposited Si/Ge growth in a multi‐wafer deposition process at atmospheric pressure
Authors: Kühne H. , Morgenstern Th. , Fischer A. , Kissinger G. , Krüger D. 
Published: January 2007

AbstractIn multi‐wafer deposition of Si/Ge thin films from silane, germane mixtures at low‐temperature epitaxy conditions not only the depletion of the silicon source but also of the germanium source along the reactor tube axis has to be counteracted in order to get homogeneous layer thickness as well as composition. Carrier gas throughput must be minimized to have a sufficient effective chemical reaction rate at low temperature. Thus it cannot be used to flatten layer growth along the susceptor. Yet the addition of a chemically reactive gas, as for instance hydrogen chloride, is suitable to ensure a nearly constant content of the layer forming source gases along the reactor tube. On the other hand hydrogen chloride may infiltrate additional contaminants leading for instance to high oxygen concentration in the deposited layer. However, oxygen soluted or precipitated changes particular features of Si/Ge behaviour for instance during the thin film growth, the following technological stress of the wafer, or the running electronic structures of microelectronic devices.
Fabrication and characterization of ZnTe/CdSe thin film solar cells
Authors: Patel N. G. , Panchal C. J. , Makhija K. K. , Patel P. G. , Patel S. S. 
Published: January 2007

AbstractThin film solar cells have been prepared and investigated by using indium‐doped n‐CdSe in conjunction with p‐ZnTe. The films are prepared on indium tin oxide (ITO) coated glass substrates by the thermal evaporation. Thin film layers have been deposited without breaking vacuum by utilizing a mask rotating system. Silver has been used as a stimulator for bringing improvement in the crystallinity and electrical behaviour of ZnTe thin films. Indium is used for obtaining the back ohmic contacts. The solar cells thus produced have been characterized by I–V‐, C–V‐, and spectral response measurements. The maximum open circuit voltage, the short circuit current density, and the efficiency are obtained as 415 mV, 11.60 mA cm−2and 1.86%, respectively under 100 mW cm−2input optical power. The diffusion potential and depletion width are found to be 1.42 eV and 21 nm, respectively.
X‐ray interferometric investigations of structural distortions in silicon crystals as a result of diffusion
Authors: Aboyan A. O. , Sarafyan M. A. 
Published: January 2007

AbstractThe influence of boron diffusion on the X‐ray Moiré pattern is investigated by means of X‐ray interferometry. It is shown that at low boron concentrations in silicon, the Moiré patterns indicate the non‐dislocative character of arising stresses. At higher concentrations the dislocations arise. Basing on the obtained topogram, the maximum local stress is evaluated, which at boron concentration of 2.5 · 1019 at/cm3 is 1.05 · 108 N/m2.
Floating‐zone growth of GaAs under microgravity during the D2‐mission
Authors: Cröll A. , Tegetmeier A. , Nagel G. , Benz K. W. 
Published: January 2007

AbstractA Te‐doped GaAs (100) single crystal of 20 mm diameter and 20 mm length was successfully grown by the floating‐zone method during the 2nd German Spacelab mission D2. Dopant striations due to Marangoni convection as well as a reduction of the etch pit density compared to te starting material have been found. The last part of the crystal, grown with the quite high translation rate of 120 mm/h, showed no sign of unstable growth and exhibited properties similar to the parts grown with 3 and 6 mm/h.
X‐ray diffraction study of the effects of boron on occurrence of deformation faults in Ni3Al alloy
Authors: Bhikshamaiah G. , Rao P. V. Mohan , Suryanarayana S. V. , Naidu S. V. Nagender 
Published: January 2007

AbstractNi3Al and Ni3Al alloys containing varying amounts of boron in L12 phase were prepared. All the samples were suitably annealed and then cold‐worked by hand filing. X‐ray diffraction data are collected on annealed and cold‐worked samples. The deformation fault probabilities have been evaluated by two methods, viz. peak shift analysis of powder pattern X‐ray reflections of annealed and cold‐worked samples, and lattice parameter change between annealed and corresponding cold‐worked samples. The values obtained by both the methods are in reasonable agreement. It has been found that the deformation fault probability of Ni3Al and Ni3Al containing boron alloys are very high compared to Ag and Cu base alloys. Further the deformation fault probability of Ni3Al is more sensitive to boron addition. It has been found that at least 1.22 at. % of boron goes into the Ni3Al lattice.
A study of a fast ionic conductor–Ag1−xCuxI
Authors: Nalini B. , Selvasekarapandian S. , Jayashree J. , Hariharan K. 
Published: January 2007

AbstractThe Conductivity of AgI–CuI system has been studied. Two molar ratios of the system Ag1–xCuxI with x = 0.05 and 0.15 have been taken. The transition temperatures are observed with conductivity measurements.
The crystal and molecular structure of three homologue 1,4‐terephthalylidene‐bis‐N‐(4′‐alkylanilines) (TBAA‐n)
Authors: Thyen W. , Zugenmaier P. 
Published: January 2007

AbstractThe three homologue compounds with the general formula

(TBAA‐n) crystallize in the following space groups: TBAA‐0: monoclinic, P 21 c. a = 7.656(3), b = 6.073(1), c = 16.403(7) Å, β = 91.60(2)°; TBAA‐1: monoclinic, P 21 c. a = 7.656(3), b = 6.073(1), c = 16.403(7) Å, β = 91.60(2)°; TBAA‐1: monoklin, P 21/n, a = 6.0426(11), b = 7.84171(4), c = 18.2147(31) Å, β = 92.32(1)°; TBAA‐2: orthorhombic, P ben, a = 20.9390(8), b = 14.8876(7), c = 6.2069(1) Å. The structures have been solved by direct methods and refined to R = 0.029, 0.044, and 0.049, respectively.Despite the different conformation of the terminal phenyl rings relative to the central core of the coplanar azomethine groups and the phenyl ring, the molecular packing of the three compounds obeys the same principles in forming the crystal structure.
A stratified Monte Carlo simulation of CSD in a continuous crystallizer for size‐dependent growth
Authors: Dey Avijit , Banerjee Suman , Gupta Bhaskar Sen 
Published: January 2007

AbstractThis work deals with the prediction of crystal size distribution (CSD) in a continuous crystallizer for size‐dependent growth. Crystal growth rates are described by Abegg, Stevens, and Larson (ASL) model. Stratified Monte Carlo method has been employed to evaluate the integrals involved in the classical moment equation for prediction of CSD. The simulation results have been compared with the available experimental data of K2CO3 · 1.5 H2O crystals in a continuous crystall lizer.
Investigation on the equilibrium vapour pressure over a GaAs melt
Authors: Hegewald S. , Hein K. , Frank C. , John M. , Buhrig E. 
Published: January 2007

AbstractInvestigations of the equilibrium vapour pressure over GaAs were carried out by a Bourdon manometer in the temperature range of 1170–1260 °C. By means of this method it is possible to measure the vapour pressure in a closed system with high accuracy. At the melting point the vapour pressure is 73 ± 4 kPa over polycrystalline GaAs produced by low‐pressure synthesis and 71 ± 4 kPa over monocrystalline horizontal gradient freezing material. The experimental and the calculated values were compared.
Crystal and molecular structure of trichloro benzyl methyl carbinyl acetate (C10H9O2Cl3)
Authors: Sambyal Vinod Singh , Goswami K. N. , Singh Tej P. , Thappa R. K. 
Published: January 2007

AbstractThe crystal structure of trichloro benzyl methyl carbinyl acetate has been determined by X‐ray analysis. The compound crystallises in the monoclinic crystal system with the space group P21/a, with cell parameters a = 12.821(1) Å, b = 7.735(2) Å, c = 13.304(2) Å, β = 1117.15(1)°. The structure has been solved by direct methods and refined up to R = 0.064. The six membered benzene ring is planar with maximum deviation 0.0048 Å for the C(3) atom. The molecules are held together by van der Waals interactions.
Charge Transfer in analogous of TCNQ derived from fluorene with TTF
Authors: Salmerón‐Valverde A. , Robles‐Martínez J. G. , Zehe A. 
Published: January 2007

AbstractIn a series of three TTF‐derived dicyanofluorene charge transfer complexes, an increase of the intermolecular charge transfer has been observed for both addition of nitro groups and a suitable symmetry of the fluorene skeleton. A numerical calculus of the charge transfer was based on IR spectroscopy data with respect to the stretching absorption band of the nitrile group.
Growth and characterization of pure and doped lead hydrogen phosphate single crystals in silica gel
Authors: Manimekalai R. , Balakrishnan T. , Ramamurthi K. 
Published: January 2007

AbstractFollowing the chemical reaction method pure and doped lead hydrogen phosphate single crystals were grown in silica gel using different gel density, various concentrations of phosphoric acid, and lead nitrate solutions. As the gel pH plays an important role in the formation of different H3PO4 species in the phosphoric acid system, the pH range in which HPO ions dominate, was considered which in turn in necessary for the growth of lead hydrogen phosphate crystals. Characteristics of these crystals were carried out by infrared spectral analysis and microhardness study.
Improvement of efficiency of ITO/Se thin film solar cells using tellurium stimulator
Authors: Patel N. G. , Lashkari B. H. , Panchal C. J. , Makhija K. K. 
Published: January 2007

AbstractIndium Tin Oxide ITO/Se thin film solar cells have been fabricated by vacuum deposition. Prior to deposition of selenium film, ultrathin tellurium film has been deposited on ITO thin film. Tellurium film acts as a stimulator for bringing improvement in crystallite size, adhesion to ITO and electrical behaviour of selenium thin films. The maximum efficiency of the ITO/Se thin film solar cells without tellurium stimulator and with tellurium stimulator under illumination AM1 (100 mW cm−2) are found to be 1.68% and 2.27% while under fluorescent tubelight (0.15 mW cm−2) are found to be 5.85% and 7.05% respectively. The ITO/Se thin film solar cells exhibits high spectral response at short wavelength. The barrier height of the ITO/Se thin film solar cells was determined.
Diffusion of vacancy‐impirity‐paris in cystalline solids studied by a Monte Carlo simulation
Authors: Fritzsch B. , Zehe A. 
Published: January 2007

AbstractThe joint migration of vacancy‐impurity‐paris (VIPs) in dilute metallic alloys has been used in a previous publication to explain void formation resitance in electromigration experiments for certain combinations. A corresponding rule to based on the valency of matrix and alloying elements. This paper deals with the range of validity of that rule, considering thermodynamic parameters like binding and migration energy as well as temperature, which are incorporated in a Monte Carlo simulation of the migration process of VIPs. Rule exceptions are explained by the outcome of this analysis.
The influence of the melt cooling rate on the properties of YIG single crystal grown by the flux method form sintered polycrystalline maeteral
Authors: Lazarescu M. F. , Manea A. A. , Elena E. 
Published: January 2007

AbstractA method for the single crystal growth of Yttrium Iron Garnet (YIG) in a PbO/PbF2/B2O3 flux mixture with a melt cooling rate of 1–2.5 °C/h is described. In order to keep constant the crystal stoichiometry as well as its specific structural and magnetic properties at such high rates of the cooling process, a previously sintered polycrystalline garnet has been used as raw material. The YIG single crystal quality was checked‐up by metallographic analysis, X‐ray diffraction, SEM, and magnetic susceptibility measurements.
Flux line pinning by defects in high Tc superconducting crystals
Authors: Boiko J. , Majewski P. , Aldinger F. 
Published: January 2007

AbstractThe possibility of flux pinning by different defects in the volume of high‐Tc superconductors is investigated. The elementary pinning potential, UP, and the pinning force, fP, of point defects (vacancies), one dimensional defects (dislocations), two‐dimensional defects (twin and low angle boundaries) and three dimensional defects (pores, precipitates, etc.) are estimated. The effectivity of the different defects acting as pinning centres is examined.
The estimation of crystallization kinetics from linear in n(L) versus L steady‐state data including growth rate dispersion
Authors: Mydlarz J. 
Published: January 2007

AbstractA discussion of modelling of nucleation and crystal growth kinetics is presented for those mixedsuspension, mixed product removal (MSMPR) crystallizer data available in the literature, for which log population density data appears to be a linear function of crystal size. The modelling crystallization kinetics is done twice – once assuming that the system is obeying McCabe's Δ law, and again when the crystals exhibit growth rate dispersion (GRD). In the latter case the gamma, inverse gamma, log‐normal, beta, Fisher, sum of two gammas, sum of two inverse gammas, sum of two log‐normal, and sum of two constant rates of growth rate dispersion models are used for crystal growth rate estimation. Finally, McCabe's and GRD predictions are compared with the size‐dependent growth rate estimations.
Analysis of the diametral response of a czochralski crystal (I) the diameter‐melt temperature relation
Authors: Sveshtarov P. , Gospodinov M. 
Published: January 2007

AbstractThe paper is the first in a series which presents results on the small‐signal diametral response of a Czochralski crystal grown in a resistance furnace to variations in the heating temperature and pulling rate. It is shown that the small‐signal diameter variation is related to the small‐signal bulk melt temperature and pulling rate variation via a second order linear differential equation.
Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal
Authors: Belal A. E. , El‐shaikh H. A. , Ashraf I. A. 
Published: January 2007

AbstractElectrical conductivity (σ) and Hall coefficient (RH) of single crystal grown from the melt have been investigated over the temperature range from 398 K to 673 K. Our investigation showed that our samples are p‐type conducting. The dependence of Hall mobility an charge carrier concentration on temperature were presented graphically. The forbidden energy gap was calculated and found to be 1.79 eV. The ionization energy of impurity level equals 0.32 eV approximately. At 398 K the mobility equals to 8670 cm2 V−1 s−1 and could described by the law μ = aTn (n = 1.6) in the low temperature range. In the high temperature range, adopting the law μ = bT–m (as m = 1.67), the mobility decreases. This result indicates that in the low temperature range the dominant effect is scattering by ionized impurity atoms, whereas in the high temperature range the major role is played by electron scattering on lattice vibrations (phonons). At 398 K the concentration of free carriers showed a value of about 1.98 × 107 cm−3.
Thin film n‐CdS/p‐AgInTe2 heterojunction
Authors: Patel Basumati H. 
Published: January 2007

AbstractThe fabrication and characteristics of n‐CdS/p‐AgInTe2 heterojunction is described. The height of the barrier is measured using current‐voltage characteristics and capacitance‐voltage characteristic. A barrier height of 0.85 volt is obtained. The light and dark current‐voltage characteristics and cell parameters are reported for a thin film n‐CdS/p‐AgInTe2 heterojunction device.
On the existence of a pyrochlore‐type phase in the system Bi2O3–TiO2
Authors: Kahlenberg V. , Böhm Prof.Dr.H. 
Published: January 2007

AbstractThe existence of a bismuth titanate in the range between Bi2Ti4O11 (Bi2O3 · 4 TiO2) and Bi4Ti3O12 (2 Bi2O3 3TiO2) has been investigated by X‐ray diffraction of samples prepared by solid state reactions. For reaction temperatures above 1100 °C and a starting composition Bi2O3 · 2 TiO2 there appeared additional lines which could be attributed to a cubic face‐centred cell with a = 10.354 Å. A multiphase Rietveld analysis based on X‐ray powder diffraction data confirmed the structural model of a pyrochlore for this compound. There is evidence that this phase belongs to the group of defect pyrochlores with a Bi3+‐deficiency resulting in a composition of Bi1.833Ti2O6.75.