bluuebunny/crossref_metadata_2025_split huggingface dataset:
Metastabilities in the electrical characteristics of Au‐CdMnTe Schottky contacts
Authors: Płaczek‐Popko E. , Sierański K. , Trzmiel J. , Szatkowski J. , Nowak A. 
Published: March 2006

AbstractSchottky Au‐Cd0.99Mn0.01Te:Ga contacts were studied by the use of the capacitance – voltage measurements and thermally stimulated capacitance technique. Capacitance was recorded within 77 K–400 K temperature range. Persistent photocapacitance was observed at temperatures as high as 260 K. Obtained results can be explained assuming the presence of DX centers in the semiconductor and the interface states at the metal–semiconductor interfacial layer. The low temperature photocapacitance has been attributed to the presence of DX centers whereas that observed at higher temperatures has been linked with the interface states. The presence of the interface states has been confirmed by the thermally stimulated capacitance studies performed at various reverse biases. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Compensation and defect passivation processes in polycrystalline CdTe: Cl layers
Authors: Consonni V. , Baier N. , Renet S. , Brambilla A. , Feuillet G. 
Published: March 2006

AbstractAn extensive optical spectroscopy investigation of Polycrystalline Cl doped CdTe layers brings new insights into the compensation and passivation processes typical of such structurally imperfect materials. 10 K Photoluminescence shows that if some of the main Cl related compensation processes are similar in poly‐ and mono‐crystalline materials, specific mechanisms are evidenced in polycrystalline layers involving complexes between chlorine atoms and extrinsic point defects in the vicinity of structural defects (e.g. extended defects). Using low temperature Cathodoluminescence imaging, it is also demonstrated that structural defects can be efficiently passivated by chlorine atoms, leading to improved electro‐optical properties. Finally, using cross‐section photoluminescence on thick layers, we correlate the evolution of the defect levels to that of the structural properties along the growth axis. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Phosphorus‐doped ZnMgTe bulk crystals grown by Vertical Bridgman Method
Authors: Saito Katsuhiko , Kinoshita Keisuke , Tanaka Tooru , Nishio Mitsuhiro , Guo Qixin , Ogawa Hiroshi 
Published: March 2006

AbstractPhosphorus‐doped Zn1–x Mgx Te (0 ≤ x ≤ 0.31) bulk crystals with zinc‐blende structure were grown by vertical Bridgman technique. Single crystalline wafers cut from the ingots have been systematically characterized by energy dispersive X‐ray analysis, photoluminescence, optical reflection and transmission, and Hall measurements together with the evaluation of electroless Pd electrode to Zn0.9Mg0.1Te. The linear increase in the lattice constant and the band‐gap energy with x was confirmed. In photoluminescence spectra at 4.2 K, two distinct band‐edge luminescence peaks were observed, whereas there are no deep emission bands. These peaks were assigned to be bound exciton emission due to neutral P acceptor and a P acceptor related free‐to‐bound transition emission. Electroless Pd electrode shows the specific contact resistance lower than 5 × 10–3 Ω cm2 for the carrier concentration of ∼1017 cm–3. Conductive p ‐type Zn1–x Mgx Te crystals with the carrier concentration of ∼1017 cm–3 were obtained for Mg composition x from 0 to 0.19. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Deep electron states in indium‐doped Cd0.93Mn0.07Te DLTS study
Authors: Hajdusianek A. , Szatkowski J. , Płaczek‐Popko E. , Sierański K. , Becla P. 
Published: March 2006

AbstractElectron traps in indium doped Cd0.93Mn0.07Te were studied with Deep Level Transient Spectroscopy. Five electron traps were found (labeled as E1 ‐ E5). Energy levels ET of related defects are equal to E T 1 = 0.09 eV, E T 2 = 0.12 eV, E T 3 = 0.18 eV, E T 4 = 0.56 eV and E T 5 = 0.65 eV. Three of them (E1, E2, E3 ) are related to the defects with thermally activated capture cross section. Electric field enhanced electron emission from the trap E4 was observed and described in the terms of the Poole‐Frenkel ‐ mechanism. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
(ZnSe/MgS)/ZnCdSe DBRs grown by molecular beam epitaxy using ZnS as a sulphur source
Authors: Sorokin S. V. , Solnyshkov D. D. , Sedova I. V. , Toropov A. A. , Ivanov S. V. , Kop'ev P. S. 
Published: March 2006

AbstractMBE growth and study of optical and structural properties of (ZnSe/MgS)/ZnCdSe distributed Bragg reflectors with λ = 520 nm and Rmax = 97% are presented. The samples were grown pseudomorphically on GaAs (001) substrate using ZnS as a sulphur source. The details of MBE growth of such structures are discussed. Scanning electron microscopy, X‐ray diffraction and optical measurements demonstrate good optical and structural characteristics of the Bragg reflectors. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Predominant point defects in tellurium saturated CdTe
Authors: Fochuk P. , Panchuk O. , Korovyanko O. , Verzhak Ye. , Yuriychuk I. , Fatuyev A. 
Published: March 2006

AbstractHigh temperature Hall effect measurements at 570–1070 K under well defined Te vapor pressure in CdTe single crystals grown by THM and Bridgman techniques were made. Both the free carrier density versus Te vapour pressure value and temperature dependencies were studied. At heating up till ∼870 K the hole density was Te vapor pressure independent, but it varied in different samples from 1 × 1016 to 1 × 1017 cm–3. At higher temperatures the conductivity becomes of intrinsic type, turning then into n‐type one. A theoretical analysis of native point defects contents at different conditions in the framework of Krögers quasichemical formalism was performed. It resulted in the impossibility of mutual compensation of native donors and acceptors proposed by different authors. The results were explained assuming the presence of an electrically active foreign point defect – the oxygen interstitial acceptor. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
High efficiency blue‐violet optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells
Authors: Abe T. , Yoshida T. , Yamane N. , Nishiguchi T. , Kasada H. , Ando K. 
Published: March 2006

AbstractWe report a high efficiency blue‐violet optical modulator consisting of ZnSe/ZnMgSSe asymmetric‐coupled quantum wells (ACQWs). The modulator devices were designed based on the finite element method in the framework of the effective‐mass approximation and grown by molecular beam epitaxy (MBE) systematically. The new device with an electron‐resonant type ACQW of [ZnSe (6 ML)/ZnMgSSe (2 ML)/ZnSe (12 ML)] has revealed a large Stark shift of ΔE ∼ 34 meV at room temperature in low electric field condition of 480 kV/cm. The maximum modulation depth is 51% with transmission configuration, and the devices show very stable operation. Differential absorption coefficients Δα between reverse bias of 0 and 24V are –26000 cm–1 at the ground state exciton resonance (E e1–hh1), and +11500 cm–1 in transparent region below the ground state, which is promising for practical waveguide optical modulators for the short wavelength. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Growth and characterization of self‐assembled CdSe quantum dots in MgS barriers
Authors: Gust Arne , Kruse Carsten , Sebald Kathrin , Lohmeyer Henning , Gutowski Jürgen , Hommel Detlef 
Published: March 2006

AbstractSamples containing CdSe quantum dots (QDs) embedded in MgS barriers have been grown by molecular beam epitaxy. Photoluminescence (PL) investigations at room temperature show a QD ensemble shift between 240 meV and 280 meV due to the enhanced carrier confinement compared to a reference sample without MgS barriers. Temperature dependent micro‐PL measurements on single QDs indicate an activation energy of 70 meV for MgS barriers, which is a factor of 2.5 higher compared to ZnS0.06Se0.94 barriers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Optical spectroscopy of CdTe/ZnTe quantum dot multilayers
Authors: Onishchenko Evgeny E. , Bagaev Victor S. , Karczewski Grzegorz , Kozyrev Stanislav P. , Kucherenko Inna V. , Mel'nik Nikolai N. , Vinogradov Vladimir S. , Vodop'yanov† Lev K. 
Published: March 2006

AbstractElectronic and vibrational states in CdTe/ZnTe quantum dot multilayers grown on a thick ZnTe buffer layer are studied using optical spectroscopy methods (photoluminescence in a wide temperature range, Raman scattering, and IR reflection). It has been established that a new band appears in the Raman spectra of sample with a small ZnTe spacer layer thickness, which can be ascribed to a vibrational mode of two closely‐spaced quantum dots. A comparison of results obtained under studies of structures grown on ZnTe and CdTe buffer layers shows that change of strain distribution pattern substantially modifies electron and optical spectra of QD structures. In particular, it can result in change of the band diagram type. A reason of anomalous peak position shift of quantum dot emission band is discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Efficient spin injection in self‐assembled CdSe quantum dots coupled with a diluted magnetic semiconductor quantum well
Authors: Asahina T. , Kayanuma K. , Nishibayashi K. , Souma I. , Hyomi K. , Murayama A. , Oka Y. 
Published: March 2006

AbstractElectron‐spin injection has been studied from a diluted magnetic semiconductor quantum well (DMS‐QW) of Zn1–x–yCdxMnySe into self‐assembled quantum dots (QDs) of CdSe through a tunneling barrier of ZnSe. The spin injection is experimentally evidenced by time‐resolved circularly polarized photoluminescence (PL) in the QDs with the circular polarization degree up to 40%. The fast injection time of 20 ps can be attributed to the tunneling probability of the electron from the DMS‐QW side. In addition to this, circularly polarized PL with the lifetime of 3.5 ns is simultaneously observed, indicating type‐II transition between the electron in the QDs and the spin‐polarized heavy hole in the DMS‐QW. Those PL energies directly indicate that the electron tunneling is assisted by a LO phonon in the CdSe QD. The spin injection via LO‐phonon‐assisted resonant electron tunneling provides an efficient spin‐injection process into the self‐assembled QD exhibiting strong quantum confinement effects. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Anisotropic spatial correlation of CdSe/Zn(S)Se quantum dot stacks grown by MBE
Authors: Roventa E. , Alexe G. , Schowalter M. , Kröger R. , Hommel D. , Rosenauer A. 
Published: March 2006

AbstractSpatial correlation of five‐ and ten‐fold stacks of CdSe quantum dots separated by Zn(S)Se spacers with different thicknesses has been investigated in plan‐view and cross‐section geometry using transmission electron microscopy and compared with grazing incidence x‐ray results. For different spacer layer thicknesses investigations revealed a strain induced ordering process which breaks down for spacer layers thicker than 8 nm. An anisotropy of the lateral alignment of the quantum dots was also found, connected with the anisotropic strain distribution around the quantum dots and surface diffusion. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Molecular beam epitaxy and structural properties of ZnCrS
Authors: Ichino Kunio , Morimoto Yasuharu , Kobayashi Hiroshi 
Published: March 2006

AbstractZn1–x Crx S thin films were grown on GaP substrates by molecular beam epitaxy. Maximum Cr content of the films in this study was x = 0.04 which was limited by the maximum operating temperature of the Cr cell in our growth system. For the Cr content of x < 0.015, zinc blende (ZB) crystals of Zn1–x Crx S were epitaxially grown, while the phase separation was observed for the larger Cr content. For the ZB thin films, lattice constant seems to depend on the growth temperature. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Study of photoluminescence from annealed bulk‐ZnO single crystals
Authors: Yoneta M. , Yoshino K. , Ohishi M. , Honda M. , Saito H. 
Published: March 2006

AbstractWe have investigated the influence of rapid thermal annealing on the photoluminescence of bulk‐ZnO single crystal. As‐grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 °C and 1000 °C, however, its intensity decreased with anneal temperature. The free‐exciton and the 2.18 eV emission line were obtaiend by the anneal at 1200 °C for 60 sec. From the X‐ray diffraction and the surface morphology measurments, the improvement of the crystallinity of bulk‐ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul‐ZnO single crystals. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Free exciton luminescence of ZnO:Zn microcrystals under electron beam excitation
Authors: Ichimiya M. , Sawada Y. , Ashida M. , Itoh T. 
Published: March 2006

AbstractCathodoluminescence in a ZnO:Zn microparticle has been investigated at room temperature. The luminescence band in the ultraviolet region is attributed to the recombination of free exciton (FE) which is hardly observed under photoexcitation due to the band bending near the particle surface due to ionized oxygen vacancies. The intensity of FE luminescence becomes large in high accelerating voltage where the penetration depth of injected electrons exceeds the width of depletion layer. The band bending is found to be reduced by means of direct injection of electrons to the oxygen vacancies near the surface, and the intensity of FE luminescence increases nonlinearly with the beam current due to the improvement of recombination efficiency by the reduction of surface electric field. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Peculiarities of defect formation processes in ZnSe crystals with isovalent Te impurity
Authors: Makhniy Victor P. , Tkachenko Irina V. , Gorley Petro M. , Horley Paul P. , Dugaev Vitalii K. , Barnaś Joseph , Vieira Maria Manuela , Dobrowolski Witold 
Published: March 2006

AbstractUsing quasi‐chemical reaction methods, we calculated concentrations of equilibrium defects for zinc selenide crystals doped with ZnSe〈Te〉 during the growth process and with ZnSe:Te from the vapour phase. It was found that the main irradiation peak at ħω m ≈1.7 eV for ZnSe〈Te〉 samples is defined with the associates formed by single‐charge intrinsic defects – positive interstitial zinc atoms $ {\rm Zn}^{\bullet}_i $and its negative vacancies $ V_{\rm Zn}^{\prime}$. These vacancies, reaching the concentrations of 1022 cm–3 in ZnSe:Te crystals, are also responsible for the luminescence and absorption peaks at the energies of 2.4 eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Vapour growth of II‐VI single crystals doped by transition metals for mid‐infrared lasers
Authors: Akimov V. A. , Frolov M. P. , Korostelin Yu. V. , Kozlovsky V. I. , Landman A. I. , Podmar'kov Yu. P. , Voronov A. A. 
Published: March 2006

AbstractA modified vapour phase contact‐free method to grow homogeneous single crystals of II‐VI compounds doped by transition metals is presented. Single crystals of ZnSe:Cr, ZnSe:Fe, ZnSe:Co, ZnSe:Ni, CdSe:Cr, ZnTe:Cr, ZnS:Fe and ZnS:Mn with doping level up to 1019 cm–3 have been grown. Efficient lasing at about 2.5 and 4 µm with ZnSe:Cr and ZnSe:Fe crystals respectively has been achieved. Dependence of Fe2+:ZnSe laser characteristics on temperature is presented in more detail. A possibility of using Cr2+:ZnSe laser in intracavity laser spectroscopy is demonstrated. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Conductivity switching effect in Cd1–xZnxTe films
Authors: Wojciechowski T. , Janik E. , Dynowska E. , Fronc K. , Karczewski G. 
Published: March 2006

AbstractWe report an experimental study of the conductivity switching effect in mono and polycrystalline layers of Cd1–xZnxTe grown by MBE on the Si(001)/Au and n+‐ GaAs(001) substrates. The current‐voltage (I‐V) characteristics of metal‐semiconductor junctions show that the conductivity of the Cd1–xZnxTe structures exhibit two states: high‐ and low‐resistive. Electrical pulses applied to the layers trigger the switching effect between these two states. The coefficient of resistivity switching is of the order of 104 while its reproducibility is repetitive about 100 switching cycles. The bistablity of the conductance in Cd1–xZnxTe layers supports the hypothesis of the ferroelectricity in this material. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV‐A sensors
Authors: Ueno J. , Ogura K. , Ichiba A. , Katsuta S. , Kobayashi M. , Onomitsu K. , Horikoshi Y. 
Published: March 2006

AbstractZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence (PL) peak intensity of ZnCdS/MgCdS was much stronger than that of ZnSe/MgCdS while ZnSe/MgCdS showed sharper luminescence line width. The PL peak energy position was compared with the theoretical value derived from the Kronig‐Penny model. The degradation of crystal quality was observed by increasing Mg content in MgCdS layer and drastic PL property degradation was observed when the Mg content in the layer exceeded a certain value. Two superlattices were applied to the UV‐A sensor of the metal‐semiconductor‐metal (MSM) configuration. Both photodetectors exhibited a high sensitivity in the UV‐A region with a sharp cut‐off in the visible wavelength region; the ON‐OFF ratio of sensor was about 103 for both structures. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Growth of boron‐doped ZnTe homoepitaxial layer by metalorganic vapor phase epitaxy
Authors: Saito Katsuhiko , Yamashita Tetsuo , Tanaka Tooru , Nishio Mitsuhiro , Guo Qixin , Ogawa Hiroshi 
Published: March 2006

AbstractWe have investigated boron (B) as a n‐type dopant for ZnTe homoepitaxial layer by atmospheric pressure metalorganic vapor phase epitaxy using triethylboron (TEB). The introduction of TEB induces considerable change in the photoluminescence spectrum of the layer. Two distinctive luminescence peaks associated with excitons bound to neutral dononor and donor‐acceptor pair (DAP) transition are emerged in the spectrum, implying that the incorporated B acts as donor impurity in ZnTe. From the temperature dependence of the PL intensity of DAP recombination, the value of donor level was estimated to be 18 meV. This value seems to be reasonable, comparing with the previous studies on Cl and Al doping of ZnTe. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Optical anisotropy of CdSe/ZnSe quantum dots
Authors: Kiessling T. , Astakhov G. V. , Platonov A. V. , Slobodskyy T. , Mahapatra S. , Ossau W. , Schmidt G. , Brunner K. , Molenkamp L. W. 
Published: March 2006

AbstractWe present comprehensive studies of in‐plane optical anisotropy in CdSe/ZnSe quantum dot ensembles. The anisotropy reveals itself as circular‐to‐linear polarization conversion and as an alignment occurring at resonant excitation without any applied magnetic fields. The variation of the anisotropy in different dots has been analyzed based on angle scans. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
High‐efficiency low‐threshold optically‐pumped green laser with single CdSe quantum‐disk‐sheet active region
Authors: Ivanov S. V. , Sedova I. V. , Sorokin S. V. , Sitnikova A. A. , Toropov A. A. , Kop'ev P. S. , Lutsenko E. V. , Danilchyk A. V. , Voinilovich A. G. , Zubialevich V. Z. , Gurskii A. L. , Yablonskii G. P. 
Published: March 2006

AbstractMBE growth and studies of structural, photoluminescence and laser characteristic of Cd(Zn)Se/ZnMgSSe quantum disk optically‐pumped laser heterostructures of a modified design are presented. The design changes include more homogeneous CdSe quantum‐disk‐sheet active region grown by modified migration enhanced epitaxy, rising the thickness and band gap of ZnMgSSe cladding layers, and a choice of proper place for the active region in the superlattice waveguide. Minimum laser threshold, maximum external quantum efficiency and maximum output power of 4.8 kW/cm2, 32%, and 21 W from both facets, respectively, have been achieved at 300 K. The laser internal loss has been estimated as small as 1–2 cm–1. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Influence of CdTe sub‐monolayer stressor on CdSe quantum dot self‐assembling in ZnSe
Authors: Sedova I. V. , Lyublinskaya O. G. , Sorokin S. V. , Sitnikova A. A. , Solnyshkov D. D. , Rykhova O. V. , Toropov A. A. , Ivanov S. V. 
Published: March 2006

AbstractThis paper reports on the attempt to apply the stressor‐controlled quantum dot (QD) fabrication technique to the conventional CdSe/ZnSe nanostructures. Super‐strained CdTe fractional monolayer (Δa/a ∼ 14% for CdTe/ZnSe) grown on top of the Te‐stabilized ZnSe surface prior to deposition of the QD material (CdSe) has been used as a stressor which is expected to affect size, composition and density of CdSe QDs. The grown structures are studied by X‐ray diffraction, transmission‐electron microscopy, photoluminescence (PL) and PL excitation in comparison with conventional CdSe/ZnSe QDs obtained by a modified migration enhanced epitaxy technique. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Thermal annealing of self‐assembled CdZnSe quantum dots studied by photoluminescence spectroscopy
Authors: Margapoti E. , Worschech L. , Slobodskyy T. , Molenkamp L. W. , Forchel A. 
Published: March 2006

AbstractSelf assembled CdZnSe quantum dots (QDs) embedded in a ZnSe matrix were thermally annealed and the induced interdiffusion between Zn and Cd atoms was investigated by photoluminescence spectroscopy. We observed a blue shift of the QD emission by more than 100 meV. According to a Fickian diffusion model an activation energy of 2.2 eV for the interdiffusion of Cd and Zn between the CdZnSe QDs and the ZnSe barrier is determined. The half widths of the emission lines decrease significantly with increasing annealing temperature, which allows to observe in the spectrum of strongly interdiffused CdZnSe quantum dots a second emission peak. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Energy relaxation in CdSe/ZnSe quantum dots under the strong exciton‐phonon coupling regime
Authors: Platonov A. V. , Kiessling T. , Astakhov G. V. , Maksimov A. A. , Larionov A. V. , Yakovlev D. R. , Slobodskyy T. , Mahapatra S. , Ossau W. , Schmidt G. , Brunner K. , Bayer M. , Molenkamp L. W. 
Published: March 2006

AbstractResonant photoluminescence and photoluminescence excitation spectroscopy have been applied to CdSe/ZnSe quantumdots where separation between the quantized levels is close to the optical phonon energy. Astrong relaxation enhancement induced by the optical phonon is observed. The fine structure of the phonon replicas is resolved. It is attributed to the optical phonons with large wave vectors from the symmetrical points of the Brillouin zone. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Comparative study of self‐assembled CdSe/ZnSe quantum dots grown by variants of conventional MBE
Authors: Mahapatra S. , Brunner K. , Schumacher C. , Kiessling T. , Astakhov G. V. , Bass U. , Margapoti E. , Ossau W. , Geurts J. , Worschech L. , Forchel A. , Molenkamp L. W. 
Published: March 2006

AbstractThe morphology, composition, and optical properties of CdSe/ZnSe quantum dots (QDs), grown by conventional molecular beam epitaxy (MBE) and two other variants of the same (low temperature MBE and in‐situ annealing), have been compared based on the results of high resolution X‐ray diffraction (HRXRD), low temperature micro‐ and ensemble‐photoluminescence (PL), atomic force microscopy (AFM), and Raman spectroscopy (RS) studies. While conventional MBE results in the formation of no discernible QD‐like features, by the alternative methods reported here, discrete CdSe QDs, 1.5 to 15 nm high and with a lower density, could be realised. Shape anisotropy of the dots has also been investigated. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)