bluuebunny/crossref_metadata_2025_split huggingface dataset:
Effect of Soxhlet Extraction and Surfactant System on Morphology and Properties of Poly(DVB)PolyHIPE
Authors: Pakeyangkoon Pornsri , Magaraphan Rathanawan , Malakul Pomthong , Nithitanakul Manit 
Published: April 2008

AbstractPoly(Divinylbenzene)PolyHIPE (Poly(DVB)PolyHIPE) was successfully prepared by using two different systems of three‐component surfactants (S20M and S80M) and toluene as porogenic solvent. Phase morphology, mechanical properties and surface area measurements of the obtained Poly(DVB)Poly HIPE were investigated. After polymerization of continuous phase followed by extraction process, the porous materials (open cellular structure with interconnections) were obtained. The cell size and surface area were found to be improved: this is due to the ability of porogenic solvent and mixture of the surfactants to prevent the Ostwald ripening (coalescence) of the emulsion droplet system. Moreover, the surface area and mechanical properties of the resulting materials were found to be depended on the Soxhlet extraction time. It was demonstrated that the usage of Soxhlet extraction technique for Poly(DVB)PolyHIPE improved surface area of the obtained materials by 107% as compared with the unextracted PolyHIPE. However, when the extraction time was longer than 12 hours, the properties of the obtained materials became poor. It was concluded that the suitable Soxhlet extraction time for Poly(DVB)PolyHIPE was 6–12 hours and at this condition, high surface area with the highest mechanical properties of the porous material were obtained.
Role of timing in assessment of nerve regeneration
Authors: Brenner Michael J. , Moradzadeh Arash , Myckatyn Terence M. , Tung Thomas H. H. , Mendez Allen B. , Hunter Daniel A. , Mackinnon Susan E. 
Published: April 2008

AbstractSmall animal models are indispensable for research on nerve injury and reconstruction, but their superlative regenerative potential may confound experimental interpretation. This study investigated time‐dependent neuroregenerative phenomena in rodents. Forty‐six Lewis rats were randomized to three nerve allograft groups treated with 2 mg/(kg day) tacrolimus; 5 mg/(kg day) Cyclosporine A; or placebo injection. Nerves were subjected to histomorphometric and walking track analysis at serial time points. Tacrolimus increased fiber density, percent neural tissue, and nerve fiber count and accelerated functional recovery at 40 days, but these differences were undetectable by 70 days. Serial walking track analysis showed a similar pattern of recovery. A “blow‐through” effect is observed in rodents whereby an advancing nerve front overcomes an experimental defect given sufficient time, rendering experimental groups indistinguishable at late time points. Selection of validated time points and corroboration in higher animal models are essential prerequisites for the clinical application of basic research on nerve regeneration. © 2008 Wiley‐Liss, Inc. Microsurgery, 2008.
Management of obstetrical brachial plexus palsy with early plexus microreconstruction and late muscle transfers
Authors: Vekris Marios D. , Lykissas Marios G. , Beris Alexandros E. , Manoudis Grigorios , Vekris Anastasios D. , Soucacos Panayiotis N. 
Published: April 2008

AbstractBirth brachial plexus injury usually affects the upper roots. In most cases, spontaneous reinnervation occurs in a variable degree. This aberrant reinnervation leaves characteristic deformities of the shoulder, elbow, forearm, wrist, and hand. Common sequelae are the internal rotation and adduction deformity of the shoulder, elbow flexion contractures, forearm supination deformity, and lack of wrist extension and finger flexion. Nowadays, the strategy in the management of obstetrical brachial plexus palsy focuses in close follow‐up of the baby up to 3–6 months and if there are no signs of recovery, microsurgical repair is indicated. Nonetheless, palliative surgery consisting of an ensemble of secondary procedures is used to further improve the overall function of the upper extremity in patients who present late or fail to improve after primary management. These secondary procedures include transfers of free vascularized and neurotized muscles. We present and discuss our experience in treating early and/or late obstetrical palsies utilizing the above‐mentioned microsurgical strategy and review the literature on the management of brachial plexus birth palsy. © 2008 Wiley‐Liss, Inc. Microsurgery, 2008.
The grape and wine constituent piceatannol inhibits proliferation of human bladder cancer cells via blocking cell cycle progression and inducing Fas/membrane bound Fas ligand‐mediated apoptotic pathway
Authors: Kuo Po‐Lin , Hsu Ya‐Ling 
Published: April 2008

AbstractPiceatannol (3,3′,4,5′‐Tetrahydroxy‐trans‐stilbene) is a polyphenol present in grapes and wine. Piceatannol is a protein kinase inhibitor that modifies multiple cellular targets exerting immunosuppressive, antileukemic, and antitumorigenic activities in several cell lines and animal models. In this study, the antiproliferative activity of piceatannol was investigated. The results showed that piceatannol inhibited the proliferation of T24 and HT1376 human bladder cancer cells by blocking cell cycle progression in the G0/G1 phase and inducing apoptosis. ELISA showed that the G0/G1 phase arrest is due to an increased in the expression of p21/WAF1. An enhancement in Fas/APO‐1 and membrane‐bound Fas ligand (mFasL) might be responsible for the apoptotic effect induced by piceatannol. Our study reports the novel finding, that the induction of p21/WAF1 and activity of the Fas/mFasL apoptotic system may participate in the antiproliferative activity of piceatannol in T24 and HT1376 cells.
Thermodynamics and linear response of a Bose‐Einstein condensate of microcavity polaritons
Authors: Sarchi Davide , Savona Vincenzo 
Published: April 2008

AbstractIn this work we derive a theory of polariton condensation based on the theory of interacting Bose particles. In particular, we describe self‐consistently the linear excitonphoton coupling and the exciton‐nonlinearities, by generalizing the Hartree‐Fock‐Popov description of BEC to the case of two coupled Bose fields at thermal equilibrium. In this way, we compute the density‐dependent one‐particle spectrum, the energy occupations and the phase diagram. The results quantitatively agree with the existing experimental findings. We then present the equations for the linear response of a polariton condensate and we predict the spectral response of the system to external optical or mechanical perturbations. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
GaN‐Si‐MEMS structure fabricated from nano‐column GaN quantum well crystal grown on Si substrate
Authors: Hu F. R. , Ito R. , Zhao Y. , Hane K. 
Published: April 2008

AbstractNanocolumn‐crystallized InGaN/GaN quantum well crystals were deposited on Si (111) substrate. Photoluminescence measurement demonstrated a wide emission wavelength from about 400 nm to 700 nm. We propose a new light source device combined with Micro‐Electro‐Mechanical Systems (MEMS). The proposed device is monolithically composed of the GaN light source structures and Si MEMS. The direction of the light beam emitted from an array of the light source can be changed by a MEMS beam steering mechanism. A micro‐stage with comb actuators was fabricated from the Si substrate. The InGaN/GaN quantum well film is patterned on the micro‐stage. Basic researches on the growth of GaN crystals on Si substrate were also carried out. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Characterization of plasma damage‐free InGaN/GaN LED with periodic deflectors
Authors: Cuong Tran Viet , Kim Hyung Gu , Na Min Gyu , Kim Hyun Kyu , Kim Hee Yun , Ryu Jae Hyoung , Hong Chang‐Hee 
Published: April 2008

AbstractMesa‐shape InGaN/GaN light emitting diodes (LED) with V‐shaped periodic deflectors were fabricated by using selective metal organic chemical vapour deposition (MOCVD). Use of SiO2 dot pattern inside LED structure can be partially contributed to a flat surface without any edge growth effects, which usually occurred at window edge regions after selective MOCVD growth. Therefore this technique promises to eliminate dry etching process by means of mesa pattern and also enhance the light output extraction efficiency. Our results indicated that the light output intensity was significantly increased as compared to that of a conventional‐LED due to the effect of periodic deflectors on facilitating the multiple chances of photons to escape. Smaller value of ideality factor for periodic deflector light emitting diode (PD‐LED) revealed difference in carrier confinement mechanism in region II of forward bias voltage analysis, while the forward bias voltage behavior in other regions was compatible with those of conventional‐LED. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
A comparative study on single and double channel AlGaN/GaN high electron mobility transistor
Authors: Zheng Jing Yao , Wu Jenq Shinn , Lin Der Yuh , Lin Hung Ji 
Published: April 2008

AbstractWe present a numerical investigation on the DC and AC characteristics of AlGaN/GaN single (SCHEMT) and double channel high electron mobility transistors (DCHEMT) using the APSYS simulation program. The simulation results indicate that the DCHEMT has a slightly wider range of transconductance and cut‐off frequency for device operation at high current levels than SCHEMT. Besides, we also examine the effect of barrier layer thickness between the two channels in DCHEMT on the transconductance profile. It is found that the operation range of transconductance can be tailored by adjusting the barrier layer thickness. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates
Authors: Imura M. , Sugimura H. , Okada N. , Iwaya M. , Kamiyama S. , Amano H. , Akasaki I. , Bando A. 
Published: April 2008

AbstractAlN layers with different crystalline quality were grown on a c‐plane sapphire substrate at 1400 °C by metal‐organic vapor phase epitaxy. Dislocations in AlN were mostly edge‐type, which was generated at the grain boundaries. Density of this type of dislocations was high in a narrow area compared with pure edge‐type dislocations caused by the misfit between substrate and epilayer. As the film becomes thicker and thicker, dislocations at the grain boundaries were dispersed. The core structure of dislocation was also revealed by high‐resolution transmission electron microscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks
Authors: Jahn U. , Calleja E. , Ristić J. , Trampert A. , Rivera C. 
Published: April 2008

AbstractThe dependence of the optical transition energy Et of GaN quantum disks (Qdisks) embedded within (Al,Ga)N nanocolumns grown on a (111) Si substrate on disk thickness, disk diameter, barrier thickness, and barrier composition has been investigated by both spatially resolved cathodoluminescence spectroscopy and applying a theoretical model. Results of Et on the disk and barrier thickness, as well as barrier composition resemble those of corresponding quantum wells, whereas results on the disk diameter are essentially determined by the lateral strain distribution of the Qdisks. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
Authors: Zang K. Y. , Chua S. J. 
Published: April 2008

AbstractNanoscale laterally epitaxial overgrown (NLEO) GaN layers were investigated on Si (111) substrate. Nanoporous SiO2 films on the surfaces of GaN/Si (111) were fabricated by inductively coupled plasma etching using anodic alumina templates as etch masks. GaN was grown over the nanoporous SiO2 layer using metalorganic chemical vapor deposition. Supersaturation of the source material was investigated to realize a continuous and smooth film. NLEO GaN layers were found to result in a significant reduction of threading dislocation density ∼108 cm–2, characterized by atomic force microscopy and cross‐sectional transmission electron microscopy. High quality GaN nanorod arrays has also been demonstrated and investigated on Si (111) substrates. Nanoscale overgrowth is a promising method to improve the quality of GaN semiconductor materials for the commercialization of GaN devices on Si substrates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Well width dependent luminescence characteristics of UV‐violet emitting GaInN QW LED structures
Authors: Kunzer M. , Leancu C.‐C. , Maier M. , Köhler K. , Kaufmann U. , Wagner J. 
Published: April 2008

AbstractTemperature and excitation power dependent photoluminescence spectroscopy on GaInN UV‐violet LED structures allows to separate the influence of the quantum confined stark effect (QCSE) from carrier localization in In‐induced band tail states as well as to determine the internal quantum efficiency (IQE). A LED series with different quantum well widths (1‐3.7 nm) was grown by MOVPE on sapphire and low defect density (LDD) GaN templates. The photoluminescence data reveal, that the QCSE cannot be neglected even for low In‐content (<10%) ultra violet LED structures. From temperature and laser power density dependent photoluminescence, the internal QE is evaluated. The data shows, that upon growth on LDD substrates, the internal QE is considerably increased for short wavelength (375‐400 nm) LEDs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Anisotropic coalescence behaviors of GaN islands grown by metal‐organic chemical vapor deposition
Authors: Chua S. J. , Zhou Hailong , Srolovitz D. J. , Du Danxu 
Published: April 2008

AbstractIn Epitaxial Lateral Overgrowth (ELO) technology, GaN is grown inside the stripe window of a SiO2 mask and then grow laterally over the mask to eventually merge and form a uniform thin film. GaN islands have hexagonal foot prints and can merge along the direction where the two parallel sides of the hexagonal islands are aligned parallel or along the direction where their tips are pointed towards one another. Growth along the <11$/bar 2$0> is found to be faster than along the <1$/bar 1$00> by a ratio of 1:0.85. After merging, the island shows different shapes which affect the strain within the island and the bending of dislocations. During the growth of the stripes to form triangular ridges, the facets are found to be different on stripes aligned along <11$/bar 2$0> compare to the facets which are formed on stripes aligned along <1$/bar 1$00>. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Fabrication of GaN‐based UV TF‐ELDs by CS‐MBE technique and their application to RGB light‐emitting pixels
Authors: Arai M. , Sugimoto K. , Egawa S. , Honda T. 
Published: April 2008

AbstractGaN‐based thin‐film electroluminescence devices (TF‐ELDs) operating in the UV spectral region were fabricated on Al substrates. GaN films were deposited by compound‐source molecular beam epitaxy (CS‐MBE) technique. Red, green and blue (RGB) light‐emitting pixels were fabricated using the GaN‐based TF‐ELDs as excitation sources. The emission efficiencies of such TF‐ELDs were reported. The estimated luminances of the RGB emitters based on the GaN films were 0.2‐7 kcd/m2, which indicate that the GaN‐based TF‐ELDs have a potential for application in flat‐panel displays (FPDs). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Preface: phys. stat. sol. (c) 5/4
Authors: Mändl Stephan , Möller Wolfhard , Rauschenbach Bernd 
Published: April 2008

AbstractThis special issue of physica status solidi contains the Proceedings of the 9th International Workshop on Plasma‐Based Ion Implantation and Deposition (PBII&D 2007). This workshop was held in Leipzig, Germany, 6–9 September 2007. The PBII&D workshop series started in 1993. Over the years, the number of participants in this workshop has grown, as well as the number of research topics presented. At the same time, the focus started to shift from fundamentals of plasma processes during plasma immersion ion implantation towards applications. Today, the workshop brings together scientists from all over the world who use plasma immersion ion implantation and deposition. The 9th International Workshop on Plasma‐Based Ion Implantation and Deposition had 91 attendees (9 of which were students) from 24 countries.The main topical areas of the workshop were simulation and modeling, plasma and ion sources, plasma diagnostics, ion–surface‐interaction, plasma based ion implantation, plasma based ion assisted deposition, surface modification and coatings, semiconductors, biomaterials, functional coatings, characterization of surface properties and industrial applications. During the workshop, 9 invited talks and 33 contributed talks were given in 9 oral sessions, and 32 posters were showcased. The scientific program was surrounded by social and cultural events, including a beer‐and‐barbecue get‐together prior to the conference, a visit of the UNESCO world‐culture‐heritage site Wörlitzer Park, and a conference banquet which was held in Püchau Castle.We would like to use this occasion to thank all our reviewers of the manuscripts for their hard work. Without them these proceedings could not have been realized. We would also like to thank our sponsors, which allowed us to support students and a few delegates from Eastern Europe and Asia. We also thank our industrial exhibitors for their interest and their valuable support.The next workshop in this series will be held in August 2009 at the National Institute of Space Research at São José dos Campos, Brazil. Mario Ueda and his coworkers look forward to seeing all of you for the 10th International Workshop on Plasma‐Based Ion Implantation and Deposition.Leipzig, February 2008
Thermo‐tunable defect mode in one dimensional photonic structure based on grooved silicon and liquid crystal
Authors: Tolmachev V. A. , Perova T. S. , Astrova E. V. 
Published: April 2008

AbstractA composite 1D photonic structure with defect was designed, fabricated by wet anisotropic etching of (110)‐oriented silicon and filled with liquid crystal. The polarized reflection spectra of the second‐order stop band with defect mode have been registered by means of FTIR microscopy. The thermo‐optical effect in the photonic structure due to phase transition in liquid crystal has been demonstrated in the spectral region of 8.5 µm. The relative shift of the defect mode peak was found experimentally to be 2.0% compared to 3.1% as predicted by calculation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
S‐allylcysteine ameliorates ischemia and reperfusion induced renal damage
Authors: Segoviano‐Murillo Sabina , Sánchez‐González Dolores Javier , Martínez‐Martínez Claudia María , Cruz Cristino , Maldonado Perla D. , Pedraza‐Chaverrí José 
Published: April 2008

AbstractThe effect of the garlic‐derived antioxidant S‐allylcysteine (SAC) on renal injury and oxidative stress induced by ischemia and reperfusion (IR) was studied in this work. Rats were anesthetized and subjected to right nephrectomy; 15 min later ischemia was induced for a period of 40 min and then the rats were subjected to a reperfusion period of 6 h after which they were killed to obtain blood and the left kidney. SAC was given at a dose of 100 mg/kg 30 min before nephrectomy, 15 min before ischemia, immediately before reperfusion and 2 h after reperfusion. IR‐induced renal injury was evident by the increase in blood urea nitrogen (BUN) and serum creatinine as well as by the renal structural damage which was assessed by histological analysis. IR‐induced oxidative stress was evident by the increase in immunostaining with 4‐hydroxy‐2‐nonenal (4‐HNE). SAC treatment was able to ameliorate the increase in BUN and serum creatinine and to decrease the structural damage. This protective effect was associated with a decrease in the immunostaining for 4‐HNE. It is concluded that the antioxidant properties of SAC are involved in its protective effect on renal ischemia and reperfusion injury. Copyright © 2008 John Wiley & Sons, Ltd.
A new tolerance design method for a secondary rechargeable battery using design of experiments with mixture
Authors: Park Jong In , Kim Seong Jun , Jeong Myong K. 
Published: April 2008

AbstractMixing errors in the manufacturing process of a mixture may cause a sizeable variation in the performance of the product, leading to the need for the tolerance design. Even though a variety of procedures have been proposed for the optimal tolerance design based on quality loss and manufacturing costs, there are no available tolerance design methods when mixing errors exist in the manufacturing process of a mixture. In this article, we propose a new tolerance design method for the case where mixing errors are involved in massive manufacturing process of a secondary rechargeable battery. Using an approximation method, we derive quality loss function, reflecting the effects of mixing errors on the product performances. Statistical design of mixture experiments is applied to build empirical models of performances as functions of component proportions in the corresponding quality loss function. A real‐life case study on the tolerance design of a secondary battery is provided for the illustration of the proposed method. The results show the efficiency of the proposed method in designing the tolerances to minimize the quality loss and manufacturing costs. Copyright © 2008 John Wiley & Sons, Ltd.
Correction
Authors: Korn Edward L. , Albert Paul S. , McShane Lisa M. 
Published: April 2008

Abstract‘Assessing surrogates as trial endpoints using mixed models’, by Edward L. Korn, Paul S. Albert and Lisa M. McShane (Statistics in Medicine 2005; 24:163–182).On page 167, the formulas for R and its population quantity are given by $R_{\rm trial}^{2}=(2\hat{\beta}^{2}\hat{\lambda}^{2})/(2\hat{\beta}^{2}\hat{\lambda}^{2}+\hat{\gamma}{2}) \,{\rm and} \,(2 {\beta}^{2} {\lambda}^{2})/(2 {\beta}^{2} {\lambda}^{2}+{\gamma}^{2}),$ respectively. However, since the variance of g is 2γ2, the correct formulas are $R_{\rm trial}^{2}=(2\hat{\beta}^{2}\hat{\lambda}^{2})/(2\hat{\beta}^{2}\hat{\lambda}^{2}+2 \hat{\gamma}{2}) \,{\rm and} \,(2 {\beta}^{2} {\lambda}^{2})/(2 {\beta}^{2} {\lambda}^{2}+2 {\gamma}^{2}),$ respectively. The only place these formulas are used in the paper is in the example in Section 3; for that example $\hat {\gamma}^2=0$, so that the results are unaffected.