bluuebunny/crossref_metadata_2025_split huggingface dataset:
Determining Nonpoint-Source Contamination by Agricultural Chemicals in an Unconfined Aquifer, Dade County, Florida: Procedures and Preliminary Results
Authors: Waller BG , Howie B 
Published: February 2009

South Dade County, Florida, is one of the few areas in the continental United States where winter fruits and vegetables are grown. About 85% of the agricultural area is underlain by Rockdale soil composed of crushed limestone and organic debris. The remainder of the agricultural area is underlain by Perrine marl. Both soils must be irrigated and require frequent applications of fertilizer, micronutrients, and pesticides. The agricultural area overlies permeable limestone of the unconfined Biscayne aquifer, which is designated as the sole source of drinking water for southeast Florida. The unsaturated zone in the agricultural area ranges in thickness from 0.3 to 4.6 m.
An evaluation of nonpoint-source contamination from agricultural chemicals began in March 1985. Representative fields from the 30 000 ha under cultivation were selected for ground-water quality monitoring. Agricultural production is comprised of row crops, seasonal tropical vegetables, groves, and commercial wholesale nurseries. Five test plots underlain by both Rockdale and Perrine marl soils were selected for intense evaluation. Wells ranging in depth from 2.4 to 15.7 m were installed in areas hydraulically upgradient and downgradient and near the center of these plots. Additional wells were installed in the shallow mixing zone within and adjacent to the agricultural area to determine background and baseline water-quality conditions.
The ground-water monitoring program was designed to leave in place a permanent well network and sampling stratagem that can be adapted to future water-quality concerns. Wells are drilled by clean water rotary and left open hole in the sampling interval so that organic, inorganic, or biological samples could be taken without contamination by drilling fluids, grouting material, or well casing and screens. A quality assurance program involving 10 to 20% of all samples was used to check field and laboratory procedures and to establish the accuracy of analytical data.
Preliminary results of water-quality sampling indicate that agriculture has had a minimal effect on ground-water quality. Of the constituents sampled, only nitrate and potassium from fertilizers are found at elevated concentrations beneath farmed areas. Elevated concentrations of some nutrients, major ions, and trace metals are found beneath areas used for storage and disposal of agrichemicals.
The Use of Synthetic Environments for Corrosion Testing
Authors: Francis PE , Lee TS 
Published: February 2009

Description
STP 970 will help the user to better assess the credibility and relevance of laboratory corrosion test data as it relates to ultimate materials performance in the final engineering application. This book summarizes experiences in the conduct of corrosion tests using synthesized environments designed to evaluate materials for use in "real" production of natural environments.
Aquatic Toxicology and Hazard Assessment: 10th Volume
Authors: Adams WJ , Chapman GA , Landis WG 
Published: February 2009

Description
The 10th volume in this series begins with a review of aquatic toxicology from its early dealing with acute problems, to its current statue as a mature field of science capable of dealing with long-term and sophisticated issues. The volume also features papers in two sections that address new aspects of aquatic toxicology: 1) bioengineering and aquatic environments and 2) application of paleoecological methodology.
Vertebrate Pest Control and Management Materials: 5th Volume
Authors: Shumake SA , Bullard RW 
Published: February 2009

Description
STP 974 is the latest offering in the continuing series on the subject of test methods development for materials used in controlling of managing vertebrate pests. Information on birds, rodents and predators/deer is presented in 18 papers. A majority of the papers in this volume are directed toward efficacy evaluation based on new or existing field test methods.
MiCon 86: Optimization of Processing, Properties, and Service Performance Through Microstructural Control
Authors: Bramfitt BL , Benn RC , Brinkman CR , Vander Voort GF 
Published: February 2009

Description
STP 979 presents 11 papers that focus on advanced and high temperature materials for the 1990’s and beyond. The papers are divided into three sections: high-temperature materials for power generation, including ferritic and austenitic steels; advanced high-temperature materials for the gas turbine engine and advanced processing, including particle metallurgy and directional solidification; and advanced materials for ground transportation, including one paper on composites.
Comparable reduction of the visceral adipose tissue depot after a diet-induced weight loss with or without aerobic exercise in obese subjects: a 12-week randomized intervention study
Authors: Christiansen Tore , Paulsen Søren K , Bruun Jens M , Overgaard Kristian , Ringgaard Steffen , Pedersen Steen B , Positano Vincenzo , Richelsen Bjørn 
Published: February 2009

ObjectiveWeight loss with preferential effect on the visceral adipose tissue (VAT) depot could have important clinical benefits. In this study, we investigated the independent and combined effect of regular exercise and diet induced weight loss on body fat distribution.DesignRandomized control design of i) exercise-only (EXO; 12 weeks of exercise without diet-restriction), ii) hypocaloric-diet (DIO; 8 weeks of very low energy diet (VLED 600 kcal/day) followed by 4-weeks weight maintenance diet) and iii) hypocaloric-diet and exercise (DEX; 8 weeks VLED 800 kcal/day+a 4-week weight maintenance diet combined with exercise throughout the 12 weeks).SubjectsSeventy-nine obese males and females were included.MeasurementsBody fat distribution was quantified by magnetic resonance imaging (MRI)-technology.ResultsIn the EXO group, the weight loss (3.5 kg) and the relative reduction in VAT (18%) was significantly lower compared with the weight losses in the DIO and DEX groups (12.3 kg;P<0.01) and to the reduction in VAT (30–37%;P<0.01). In all the three groups, the relative reduction of VAT was higher as compared with the reduction in fat mass (FM; combining all fat depots determined by MRI;P<0.01 for all comparisons). The changes in VAT were associated with changes in FM and related to the initial VAT/FM ratio (r2=0.72;P<0.01).ConclusionExercise has no additional effects in reduction of the VAT depot, compared with the major effects of hypocaloric diet alone. In addition, the effects of exerciseper seon VAT are relatively limited. The effects on the VAT depot are closely associated with changes in total FM.
High Performance InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors
Authors: Wakimura Nobuhito , Nakagawa Yugo , Taguchi Hirohisa , Iida Tsutomu , Takanashi Yoshifumi 
Published: February 2009

AbstractHigh electron mobility transistors (HEMTs) with a pseudomorphically strained InAs channel (InAs-PHEMTs) were fabricated, and their high frequency characteristics were estimated by measuring the S-parameters. For a VDS of 1.4 V and VGS of 0.3 V, InAs-PHEMTs showed an excellent intrinsic cut-off frequency (fT, int.) as high as 90 GHz regardless of their longer LG (0.7 μm). Since fT is known to be inversely proportional to LG to the first approximation, fT, int. of our InAs-PHEMTs may reach 630 GHz if their LG is reduced to 0.1 μm.Moreover, we calculated the InAs-PHEMTs' energy state and potential profile by self-consistently solving the Schrödinger and Poisson equations. In solving the Schrödinger equation, the energy-dependent effective mass was employed to take into account the strong non-parabolicity of InAs conduction-band based on the k·p perturbation theory by E. O. Kane. It was clarified that most electrons are confined to the InAs layer. On the contrary, if the non-parabolicity is not taken into account, electrons will spread over the InGaAs channel layer.
Change in Tunneling Spectrum of a Co/AlOx/Co Junction under Constant Voltage Stress
Authors: Horikiri Kouhei , Shiiki Kazuo 
Published: February 2009

AbstractTo investigate the aging effect of a tunneling junction under constant voltage stress, the tunneling resistance and inelastic electron tunneling (IET) spectra were measured. At a low voltage, up to about 0.5 V, the tunneling resistance of junctions increased gradually over time, while above about 0.6V, it decreased gradually. This change was observed independent of voltage polarity. When the applied voltage was positive, the IET spectrum did not change, whereas when it was negative, the IET spectrum changed—the asymmetric peak became symmetric. X-ray photoelectron spectroscopy (XPS) analysis showed that the junction exhibiting an asymmetric peak contained metallic Al at the AlOx/bottom electrode interface, and the junction exhibiting a symmetric peak contained a homogeneous barrier layer. An increase in the tunneling resistance indicates that the amount of metallic Al decreased in the AlO x barrier layer. Transformation from an asymmetric to a symmetric peak indicates that the metallic Al in the AlOx/bottom electrode interface was oxidized, which led to the AlOx layer becoming homogeneous.
Influence of Titanium Nitride Cap Layer Thickness on the Oxygen Sensitivity of Cobalt Films During Silicide Processing
Authors: Hoffman Nathan J , Ketcheson Roger , Stambaugh Daniel , Safran Laura , Campos Richard , Mase Jerry , Codi Daniel 
Published: February 2009

AbstractTitanium and cobalt silicides have long been used as gate electrode materials for very large-scale integrations (VLSI) circuits. As scaling has pushed the industry to quarter micron technologies and below, cobalt has become the material of choice for forming silicides, since it can maintain its low resistivity on much narrower line widths. Oxidation of the cobalt film is a concern during silicide processing, as the cobalt oxide will not be removed during the cobalt etch step. To protect against the oxidation of the cobalt layer during the silicidation process, the reaction is conducted underneath a titanium nitride (TiN) capping layer. Variations in the TiN capping layer thickness were investigated to determine the affect on oxygen sensitivity of the cobalt silicide process. A strong correlation was found to the thickness of the TiN-capping layer, to the oxygen concentration required to oxidize cobalt during the silicidation process.
Observation of Microstructure of Grain Boundaries of ZnO Varistors using Backscattered-electron
Authors: Takada Masayuki , Sato Yuuki , Yoshikado Shinzo 
Published: February 2009

AbstractThe impurities segregated at the grain boundary of ZnO grains, such as Bi2O3, are important factor to obtain the nonlinear voltage-current (V-I ) characteristics of a Bi-added ZnO varistor. The deterioration of V-I characteristics progresses with voltage application. It has been reported that one of the reasons for this deterioration is the movement of oxide ions and interstitial Zn2+ ions across grain boundaries and around the neighborhood of grain boundaries. Thus, the mobility of ions and the pathway of the current formed by voltage application strongly correlate with the structure of grain boundary, such as the crystal orientation of ZnO grains, the phase of Bi2O3 at the grain boundary, and segregated grains. In the present studies, the structure of grain boundary for the ZnO varistor has been evaluated by composition images obtained from energy dispersive X-ray spectrometry (EDS) with scanning electron microscope (SEM) or with transmission electron microscope (TEM). However, the elemental mapping obtained from EDS with SEM is low resolution and the distribution of elements is obscure. Furthermore, the observation of varistor with TEM is difficult because the sample used for TEM needs precise processing. On the other hand, a composition image with high contrast of tone can be easily obtained using back-scattered electron (BSE) detector with SEM, although BSE detector is lack in the quantitative analysis. In this study, to clarify the microscopic distribution of impurities at the grain boundary with simple method, we observed the fractured surface of ZnO varistor using BSE detector with SEM. For the fractured surface, two types of fracture exist; grain boundary fracture and transcrystalline fracture. The microscopic distribution of impurities can be obtained by observing the surface of grain boundary fracture. The characteristics of ZnO varistor deeply correlate with the state of impurities at the grain boundary such as Bi2O3. To clarify the distribution of these impurities, the fractured surface of Bi-Mn-Co-Sb-added ZnO varistor was observed using SEM, EDS, and BSE detector. It was found that the deposit of Bi2O3 as additive had two types of shape on the surface of grain boundary fracture; spot-like and sheet-like, for Bi-Mn-Co-Sb-added ZnO varistor. With dissolving SiO2 in Bi2O3, the surface tension of Bi2O3 decreased and the sheet-like deposit of Bi2O3 increased, while the spot-like deposit of Bi2O3 decreased. Moreover, when the sample was annealed at 700°C, the surface free energy (surface tension) decreased because Zn2+ and Bi3+ were speculated to become the compound such as Bi7.65 Zn0.35 O11.83 and move to the triple point or line.
Excitation Pathways of Rare Earth Ions by Energetic Electrons
Authors: Penn Tafon Samson , Fleischman Zackary , Maurer Leon , Dierolf Volkmar 
Published: February 2009

AbstractUsing cathodoluminescence measurements, we studied the excitation of rare earth ions in LiNbO3and compare it with previously studied Eu ions in GaN. We find that in both hosts and all dopants the most efficient excitation pathways involves a defect traps that capture the energy from the electron-hole pairs created in the host by E-beam irradiation. Even then the excitation efficiency in LiNbO3is very low. Moreover, only a small fraction (<10-4) of the RE ions that are optically active can be excited through this pathway. We explain this behavior by a negligible direct excitation and a strong dependence of the excitation efficiency on the distance between the defect trap and the rare earth ion. The density of the defect traps is small such that many rare earth ions are far away from traps.
Optical and Luminescent Properties of Highly Oriented Nanocrystalline Gd2-xEuxO3 Thin Films
Authors: Jáuregui-Rosas Segundo , Perales-Pérez Oscar , Singh S. P. , Tomar M. S. , Jia Wei-Ji , Vásquez Omar 
Published: February 2009

AbstractHighly crystalline and transparent Eu-doped Gd2O3 thin films were produced through a modified sol-gel method that did not require the use of any chelating agent. The effect of the atomic fraction of Eu3+ ions (‘x’ =0.05-0.30) on the structural, optical and luminescent properties has been studied. X-ray diffraction studies showed the preferential growth of Gd2-xEuxO3 thin films along the (400) plane corresponding to the cubic phase. UV-vis measurements revealed the high film transparency of the films in the visible region and a band gap value of 5.3eV. It has also been observed that the luminescence properties of the films were strongly dependent on both, the excitation wavelength and Eu concentration; the most efficient excitation conducive to red luminescence was achieved at the absorption band of Gd2O3 host (229nm). Under this condition all films exhibited strong red emission that is characteristic of Eu3+ ions. The emission intensity was also dependent on the doping level; the most intense luminescence was obtained at ‘x’=0.15. The drop in the luminescence intensity observed for ‘x’ values higher than 0.15 was attributed to quenching concentration effect.
First Eu3+@Organo-Si(HIPE) Hybrid Macro-Mesocellular Foams Generation and Associated Luminescent Properties
Authors: Brun Nicolas , Julian-Lopez Béatriz , Hesemann Peter , Laurent Guillaume , Deleuze Hervé , Sanchez Clément , Achard Marie-France , Babeau Annick , Backov Rénal 
Published: February 2009

AbstractUsing both &#946;-diketone and malonamide organosilane derivatives and silica Si-HIPE macro-mesocellular foams (acronym refers to the High Internal Phase Emulsion process), organically modified silicates (ORMOSILs) with chelating functionality have been synthesized. The organic functionalities have been anchored to the silica porous networks by both a two-steps grafting method, relating to grafted gOrgano-Si(HIPE), and a one-step co-condensation process, relating to Organo-Si(HIPE). The loading of monoliths by lanthanides was performed by impregnation of an europium (III) salt in solution, leading to a new Eu3+@(g)Organo-Si(HIPE) hybrid foams series. The resulting materials have been thoroughly characterized via a large set of techniques such as SEM, TEM, SAXS, mercury intrusion porosimetry, nitrogen adsorption, FTIR and 29Si CP MAS NMR. Luminescence behavior of this Eu3+@Organo-Si(HIPE) series was also studied and the effects of environment and europium concentration will be discussed.
Solution Processed Self-Assembled Monolayer Gate Dielectrics for Low-Voltage Organic Transistors
Authors: Ball James , Wöbkenberg Paul H , Colléaux Florian , Kooistra Floris B , Hummelen Jan C , Bradley Donal D. C. , Anthopoulos Thomas D 
Published: February 2009

AbstractLow-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated.
Flexible Audible Display using ITO on PVDF and Its Interface Analysis
Authors: Park Dong-Hee , Ie Sangyub , Bae Byeong-Taek , Choi Won-Kook 
Published: February 2009

AbstractFlexible audible display (FAD) based on PVDF(Poly-vinylidene fluoride) film is researched to combine piezoelectric property with light emitting diode. Indium-Tin-Oxide (ITO) is deposited on PVDF film at low temperature condition with the vacuum web coating. Under the optimized working pressure and the oxygen/argon pressure ratio, ITO on PVDF shows good electrical property of sheet resistance about 120 ohm/sq at 160 nm thickness, good transmittance of 76%, and sound pressure level more than 70 dB. OLED device with Al/LIF/Alq3/ NPB/ 2T-NATA structure is fabricated on ITO/PVDF and shows the turn-on voltage of 3.5 V and the maximum luminescence of 1011.2 cd/cm2 at the driving voltage of 13 V. C-F chemical bondings are measured to decrease in the XPS spectrum of ITO/PVDF interface. This is originated from the bonding scission caused by incident energetic particles, such as sputtered atoms, backscattered Ar ions, and negative O ions during the sputtering and deposition process. These particles have energy, which is simulated by TRIM and is more than 5 eV, enough to cause the scission of C-F bondings with binding energy of 4 eV/atom.
In-situ Study of Electromigration-induced Grain Rotation in Pb-free Solder Joint by Synchrotron Microdiffraction
Authors: Chen Kai , Tamura Nobumichi , Tu King-Ning 
Published: February 2009

AbstractThe rotation of Sn grains in Pb-free flip chip solder joints hasn't been reported in literature so far although it has been observed in Sn strips. In this letter, we report the detailed study of the grain orientation evolution induced by electromigration by synchrotron based white beam X-ray microdiffraction. It is found that the grains in solder joint rotate more slowly than in Sn strip even under higher current density. On the other hand, based on our estimation, the reorientation of the grains in solder joints also results in the reduction of electric resistivity, similar to the case of Sn strip. We will also discuss the reason why the electric resistance decreases much more in strips than in the Sn-based solders, and the different driving force for the grain growth in solder joint and in thin film interconnect lines.
Evaluation of Adhesion Between UV-cured SiOC Film and Si Substrate by Nanoindentation Method
Authors: Takeda Masaaki , Matoba Nobuhiro , Oishi Manabu , Sakai Mototsugu 
Published: February 2009

AbstractIt is important to quantitatively measure the adhesion strength at the interface in a small area of electronics devices to ensure their reliability. In this study, a simple technique for measuring the adhesion using the nanoindentation method by considering the energy balance during the indentation process was proposed and applied to measure the adhesion of three kinds of UV-cured SiOC films with a thickness of 500 nm on a Si substrate.
The discontinuous points of approximately 300 nm in depth appeared in all the indentation curves with a high reproducibility, and it was confirmed that these points reflect the occurrence of an interfacial delamination. The total dissipated energies calculated from the load vs. indentation depth curves indicate a good correlation with the indentation load. The delamination energies can be estimated using this relationship. The energy release rates at the interface of the UV-cured SiOC films calculated from the energy balance increases with the increasing UV curing time.
From these result, we can confirm the technique proposed in this study is quite useful to simply and quantitatively measure the adhesion, especially against a thin film or the small area, even if the film is ductile.
Mechanical and Electrical Reliability of a Chronically Implanted Metal-Polyimide Electrode Array
Authors: Yeager John D. , Phillips Derrick J. , Rector David M. , Bahr David F. 
Published: February 2009

AbstractA flexible electrode array consisting of a thin metal film on a polymer substrate has been developed for neural implantation in rats. The biocompatible arrays record cortical brain signals from awake and mobile rats in order to gather significant neurological data. Four point bend testing of the metal-Kapton system has been used to characterize the interfacial toughness, and therefore the mechanical durability, of the array. Several different adhesion layers on were evaluated using this method. Use of a titanium-tungsten interlayer increases the mixed-mode fracture toughness from approximately 1 J/m2 to approximately 2 J/m2, while a titanium interlayer provides a toughness of more than 4 J/m2. Gold-Kapton arrays were implanted in rats for periods exceeding 200 days, and neural recordings were taken frequently. The arrays exhibit excellent long-term reliability, with no decrease in signal recording capability over the course of the implantation.
Hydrogen Ordering and Metal-Semiconductor Transitions in Rare-Earth Hydrides
Authors: Vajda P. 
Published: February 2009

AbstractAfter an introduction to the rare earth – hydrogen phase diagram, stressing the often broad existence range of the solid solution (α), dihydride (β) and trihydride (γ) phases, we are describing in detail the fluorite-type dihydride and its superstoichiometric composition, RH2+x, where the x atoms occupy the available octahedral interstitial sites. It is shown how these additional x atoms interact with each other to form ordered H superlattices (sometimes distorting the cubic CaF2structure) and how the latter influences the electronic structure of the systems modifying the magnetic properties and/or leading to metal-semiconductor transitions.