bluuebunny/crossref_metadata_2025_split huggingface dataset:
The geological observations of Robert Hooke (1635–1703) on the Isle of Wight
Authors: Drake E. T. 
Published: November 2007

Abstract

As Curator of Experiments at the Royal Society of London, Robert Hooke (1635–1703) was too busy to have been considered a ‘geological traveller’. Yet he made fundamental geological observations whenever he did travel. He set these observations in a series of lectures he gave at the Royal Society over a period of some thirty years. These lectures were published posthumously by Richard Waller in 1705 as
Lectures and Discourses of Earthquakes and Subterraneous Eruptions
. Although his contemporary Nicolaus Stenonis, or Steno, has been recognized as the founder of geology, Hooke's more profound and compelling observations and explanations have been largely ignored by the geological community. There is also evidence that Hutton benefited considerably from Hooke's ideas.

Hooke's writings show that he derived many of his geological hypotheses from his intimate knowledge of the processes taking place on the shores of his birthplace, the Isle of Wight. This paper presents what Hooke observed and described and is illustrated with photos taken by the author on the shores of the Isle of Wight.
Robert Jameson on the Isle of Arran, 1797–1799: in search of Hutton's ‘Theory of the Earth’
Authors: Nicholas C. J. , Pearson P. N. 
Published: November 2007

Abstract
The Isle of Arran lies off the Ayrshire coast in the Firth of Clyde, SW Scotland. James Hutton visited Arran in August 1787 with his companion, John Clerk, and together they made the first geological investigation of the island. Hutton returned to Edinburgh satisfied that he had at last found the critical field evidence he had been searching for in support of his ‘Theory of the Earth’. In June 1797, ten years after Hutton's first survey of Arran, Robert Jameson arrived on the island to investigate its geology and mineralogy. Jameson was still only 22 but had already become one of Hutton's most ardent critics. The previous year he had read two papers to the Royal Medical Society of Edinburgh refuting critical elements of Hutton's ‘Theory’.

Based at Kilmichael, near Brodick, on the east coast, Jameson spent most of June, July and August systematically exploring Arran entirely on foot. On returning to Edinburgh, he combined a narrative of his observations on Arran with an earlier trip to his parents' native Shetland Islands, in what became the earliest published account of the geology of Arran;
An Outline of the Mineralogy of the Shetland Islands, and of the Island of Arran
(1798). Jameson returned to Arran for a second, shorter visit in August 1799 and subsequently published a second book,
The Mineralogy of the Scottish Isles …
(1800), which presented a revised and updated geological description of Arran.

Jameson's handwritten journals for both his 1797 and 1799 tours of Arran survive. In this paper we draw on these first-hand accounts of Jameson's field observations and discuss them alongside his two subsequent books describing Arran's geology. The journals clearly show that Jameson was an acute observer in the field and consistently made his interpretations in accordance with Wernerian principles. Although he had read the published Volumes I and II of Hutton's ‘
Theory
’, it appears that he had not seen the unpublished Volume III manuscript prior to either tour. Nevertheless, Jameson's exploration of the island closely follows that of Hutton's and they visited many of the same field localities. Here, we use Jameson's Arran journals to retrace his field investigations and discuss them in the light of Hutton's previous work on the island and in relation to Jameson's own Wernerian views. The difference of approach and interpretation between the two in the field on Arran mirrors the wider conflict between Plutonists and Neptunists at this time.
J. D. Forbes and Naples
Authors: Dean Dennis R. 
Published: November 2007

Abstract

James David Forbes (1809–1868) became a geological traveller in 1826 when, at the age of 17, he visited Naples with his family. Not content to be an ordinary, superficial tourist, he undertook sophisticated geological investigations of Mount Vesuvius and other well-known volcanic phenomena. On his return to Scotland, following a trip of some fifteen months abroad, Forbes wrote two anonymous papers based on his Italian experiences. When David Brewster, editor of the
Edinburgh Journal of Sciences
, accepted both, Forbes continued his submissions with an eight-part series entitled
Physical Notices of the Bay of Naples
, all of which appeared. These essays, summarized here, were—for such a young author—remarkably accomplished. Esteemed as genuine contributions to geological literature, they were cited approvingly over a period of twenty-five years by such prominent older geologists as Charles Lyell, K. E. A. von Hoff, Ami Boué, and Sir Henry De la Beche.
The geological travels of Charles Lyell, Charlotte Murchison and Roderick Impey Murchison in France and northern Italy (1828)
Authors: Kölbl-Ebert M. 
Published: November 2007

Abstract
In 1828, Charles Lyell (1797–1875), Charlotte Murchison (1788–1869) and her husband Roderick Impey Murchison (1792–1871) embarked on a long journey around Europe. The party left Paris in May 1828, travelled through the Massif Central and continued southwards. The geological programme was dedicated to stratigraphical and geomorphological observations, but sightseeing was not neglected. Published papers by Lyell and Roderick Murchison report their scientific results, but it is the unpublished journals, notebooks and letters, which illuminated their research programmes, task management and daily routine. There was an effective division of labour, which increased the scientific productivity of the trio. Lyell and Roderick Murchison decided about routes and research topics and travelled long distances on foot taking stratigraphical sections and keeping track of correlations of structures, whereas it was Charlotte Murchison's task to do much of the time-consuming fossil-hunting, sketching of landscapes and geological structures and—speaking French fluently—to visit local experts, whose expertise might add to the success of the journey. Also, the different initial expectations and working styles of Charles Lyell and Roderick Murchison become evident.
CMOS Technology Development for a Totally Digital A/D Converter
Authors: Pesenti G. C. , da Silva R. C. , Boudinov H. , de Andrade A. .. , Zani A. , Mainardi J. O. , Balen T. R. , Carro L. 
Published: November 2007

A fully analog-to-digital converter was fabricated with a new developed educational poly-Si gate 5μm CMOS technology of the Laboratory of Microelectronics of Instituto de Física, Universidade Federal do Rio Grande do Sul. The ISE_TCAD simulation software was used for technology adjustment and design parameters extraction. These simulations were used to obtain data like effective channel length, junction depth, and also to determine the critical steps of the technological process. The A/D converter consists on a ring oscillator, a 8-bit counter and input/output buffers. Test structures like p-type and n-type Poly-Si/SiO2/Si MOS capacitors, PMOS and NMOS transistors, inverter and output buffer were included in the chip design. The set of 8 chromium lithography masks was	ordered from DuPont, USA. After processing the chip, electrical measurements of the test structures, and circuit modules were performed.
Microsensors for Multiple-Parameter Medical Measurements
Authors: Tanase D. , Goosen J. F. , Firouzian A. , French Patrick J. 
Published: November 2007

Often in medical applications a single measurement does not give sufficient information to the clinicians. IC technology allows	the combination of several sensors in a small volume for instantaneous multi-measurements at a single location. This paper presents two multi-parameter sensors for catheter applications, with initial experimental results, along with the packaging issue - an important aspect for biomedical sensors.
Fractal Carbon-MEMS Electrodes: Theory and Preliminary Fabrication
Authors: Park Benjamin Y. , Zaouk Rabih , Wang Chunlei , Zoval Jim , Madou Marc J. J. 
Published: November 2007

Fractal electrode designs are proposed for electrochemical devices. A zeroth-order approximation fractal model is analyzed and basic insights into the scaling laws of the electrical properties and the surface-to-area ratio are derived. Fractal electrodes can minimize internal resistance while maximizing surface to volume ratios. Recent C-MEMS techniques	show great promise for use in the fabrication of fractal electrodes for electrochemical applications. Preliminary results showing carbon fractal electrodes fabricated using C-MEMS techniques are presented.
Rapid Prototyping of Microfludic Systems
Authors: Kido Horacio , Zoval Jim , Madou Marc J. J. 
Published: November 2007

We use a rapid, simple, and cost-efficient system for making prototypes of microfluidic systems. It combines the use of a computer numerical	controlled (CNC) unit to machine polymer substrates, a cutting	plotter to cut transfer adhesives, and roller lamination equipment to press the polymer substrates and adhesives together. When assembled, the processed parts contain fluidic chambers and channels. The system enables the testing of new microfluidic designs within hours	after their inception.
Relative Humidity Sensor Based on Rough Polysilicon Thin Films
Authors: Zambrozi P. , Teixeira R. C. , Fruett F. 
Published: November 2007

In this work we present the development, fabrication and	characterization of a microelectronic humidity sensor, based on an especially designed capacitor with a hygroscopic dielectric. The hygroscopic dielectric was obtained through deposition of a roughness polycrystalline silicon (polysilicon) by LPCVD using a vertical reactor. Surface morphology of the polysilicon film	was obtained by Atomic Force Microscope - AFM. A circuit converter based on the switched-capacitor technique was implemented to obtain a sensor with output voltage. The sensitivity and temperature coefficient of the sensor system were determinated experimentally. Experimental results presented an exponential dependence of the output voltage with	the relative humidity.
Microsensor for the Measurement of Concentration of Liquid Solutions
Authors: Dias Mendonça Lucas G. , Ibrahim Ricardo C. 
Published: November 2007

This work consists on the design, fabrication and	characterization of a	sensor to measure the concentration of a liquid solution with	dielectric components. The sensor is of capacitive type, and it is processed using conventional microfabrication techniques. A thick interdigital	structure made of nickel was electroplated on an alumina substrate. In this way, the interdigital structure forms the capacitor plates while the liquid solution is the dielectric material. The dielectric constant of the solution has an intermediate value when compared to the respective values of the pure components of the mixture. Such microsensors have been	successfully applied to distinguish amongst different types of fuels	commonly used in Brazilian automobiles (gasoline and ethanol).
Ammonia Sensor Based on Polyaniline and Nickel Tetrasulfonated Phtalocyanine
Authors: Heleno Cassia M. , Dirani Ely A. , de Andrade A. .. 
Published: November 2007

An ammonia sensor based on Polyaniline and Nickel	Tetrasulfonated Phthalocyanine is proposed. The films were fabricated via electrostatic layer-by-layer (LbL) technique where polyaniline (PAni) was assembled with tetrasulfonated nickel phtalocyanines (NiTsPc). The sensor performance on the ammonia concentration and the humidity level	variation was investigated. The combined use of Pani and NiTsPc yield high sensitivity to ammonia and at the same time a low sensitivity to the humidity, a desirable feature of an ammonia sensor.
Charge-Based Continuous Explicit Equations for the Transconductance and Output Conductance of Submicron Graded-Channel SOI MOSFET'S
Authors: de Souza Michelly S. , Pavanello M. A. 
Published: November 2007

This paper presents charge-based continuous explicit equations for the transconductance and output conductance of submicron Graded- Channel (GC) Silicon-On-Insulator (SOI) nMOSFET. Short-channel effects like channel length modulation, velocity saturation and drain-	induced barrier lowering have been considered in the proposed expressions. Experimental results were used to test the equations by comparing not only the transconductance and the output conductance, but also the Early voltage and the open-loop voltage gain, showing a good agreement as well as smooth transitions between the different regions of operation, validating	the proposed equations.
Analysis of Self-Heating Effect in Graded-Channel Silicon-on-Insulator nMOSFETs
Authors: de Souza Costa Sára E. , Pavanello M. A. , Martino João A. 
Published: November 2007

This paper presents a Self-Heating (SH) analysis using conventional Silicon-On-Insulator (SOI) in comparison to Graded-	Channel (GC) SOI nMOSFETs devices. The analysis is performed comparing devices with the same mask channel length and with the same effective channel length. Two-dimensional numerical simulations are performed in both studies considering the	lattice heating. The models and the thermal conductive constant used in these simulations are also presented. It is	demonstrated that GC devices with the same mask channel length presents similar occurrence of SH independently of the length of lightly doped region despite the larger drain current. On	the other hand, for similar effective channel length, the SH is less pronounced in GC transistors as the mask channel length has to be increased in order to compensate the current difference.
Influence of Non-Vertical Sidewall on FinFET Threshold Voltage
Authors: Giacomini Renato , Martino João A. 
Published: November 2007

The FinFET structure is one of the most promising architecture approaches to double-gate devices. Due to limitations of process uniformity, most fabricated FinFETs have width variation along	the vertical direction, resulting in non-vertical sidewalls. The impact of nonvertical sidewalls on the threshold voltage of FinFETs is studied in this work through three-dimensional simulation. The main purpose of this study is to verify the applicability of some analytical models developed to double-gate devices with parallel gates to FinFETs with inclined sidewalls. The behavior of the threshold voltage for different doping levels and silicon film width is discussed. The use of the existing models taking an average width of the silicon film as the device width is	proposed and shows to be a good approximation.
Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology
Authors: Gimenez Salvador P. , Ferreira Rodrigo M. , Martino João A. 
Published: November 2007

This paper studies the Early voltage behavior in circular gate partiallydepleted SOI nMOSFET. The drain/source asymmetric effects are considered in terms of drain current as a function of the gate	and drain voltages. Drain current comparisons with rectangular gate partiallydepleted SOI nMOSFET are performed, regarding the same effective channel length and width. Experimental results and three- dimensional simulations are used to qualify the results.
A New Electrocn Microscopy Facility in the Mountain of Minas Gerais
Authors: Bergmann José A. , de Oliveira Alfredo G. , Queiroz Dulciene M. , Machado Conceição , Ciminelli Virgínia , Soares Cristina D. , Brandão Dagoberto S. , da Silva Elizabeth R. , Kitten Gregory , Gonzalez Juan C. , Balzuweit Karla , Souza Luiz A. , de Albuquerque Lagares Monique , Mohallem Nelcy D. , Dussin Tânia M. , Rodrigues Wagner N. 
Published: November 2007

The new Microscopy Center at the Federal University of Minas Gerais (UFMG) is presently in the final stages of construction. Here, we will describe the history as well as the technical aspects of this new facility, which will be fully available to the scientific, state and private enterprise communities in 2007. We envision that this multi-user facility will be a place where researchers from material sciences and biomedical areas will share space, microscopes and knowledge. Such cross- discipline interactions should promote a better interface between these diverse areas and enhance the growth of emerging areas such as	nanotechnology	and bioengineering.
Controlled Deposition of Carbon Nanotubes by Dielectrophoresis for Micro and Nanodevices
Authors: León Jorge , de Moraes Mario B. , Veríssimo Carla , Moshkalyov S. A. 
Published: November 2007

We present results of the study of the aligned carbon nanotubes deposition using a process of dielectrophoresis with AC eletric fields. Multi-walled nanotubes were deposited from aqueous suspensions over the systems of electrodes with	separation of a few microns using frequencies in the range 10 Hz - 10 MHz and peak-to-peak voltages between 2 and 10 V. Better orientation of the nanotubes with reduced content of impurities deposition is achieved for frequencies higher than 1MHz. Electrical measurements confirmed that low resistivities between the electrodes (i.e., better quality of the nanotube deposition) were obtained for higher frequencies. The method can be used for fabrication of nanotube based micro and nanodevices.
Fabrication of Metal-Semiconductor-Metal Photodetectors Using Low Temperature Rapid Thermal Annealing
Authors: Ohta R. L. , Viana C. E. , Morimoto N. , Borges B. V. 
Published: November 2007

The electrical properties of Ti-Si-Ti Metal-Semiconductor-Metal (MSM) photodetector were studied as a function of annealing temperature using the Rapid Thermal Annealing (RTA) process. Low temperatures were used at the RTA (200-350{degree sign}C) in order to avoid the formation of silicides. We observed a decrease in the dark current on samples annealed between	200 and 300{degree sign}C. The lowest dark current obtained was in the sample annealed at 250{degree sign}C (4.8 nA), which is one order of magnitude lower than as-deposited sample (53.5 nA). The sample annealed at 350 {degree sign}C had an increase in dark current (82.9 nA). This behavior of the dark current can be explained by the increase in the barrier height at 200-300 {degree sign}C annealing temperature range (due to increase of the thickness of the amorphous interdiffused Ti-Si interfacial layer) and decrease in the barrier value at sample annealed at 350{degree sign }C (due to pre formation of C49 TiSi2).
SEM/EDS Characterization of Ni and Ni/Pt Silicide Formation
Authors: dos Santos R. E. , Doi I. , Swart J. , dos Santos Filho S. G. 
Published: November 2007

Ni and Ni(Pt) silicides have been used as a crucial part of ultra-high speed CMOS technologies. Nisi has many advantages to be a suitable candidate to self-align contact for ULSI devices. The Ni(Pt) silicide present all good NiSi characteristics and also the improved thermal stability. This paper investigates the agglomeration formation on Ni and Ni(Pt) silicides thin films and its material compositions. The samples were characterized by Scanning Electron Microscopy (SEM) with an Energy Dispersive Spectroscopy (EDS). NiSi exhibited high surface precipitate formation around 600ºC, and Ni(Pt)Si low precipitate formations up to 820ºC and film degradations at	annealing temperatures around 900ºC. EDS analysis revealed the	composition of the agglomerations of NiSi films as consisted of Si and Ni, being the Si the major constitutive element of the agglomerates in 600{degree sign}C films and Ni of the agglomerates in 820{degree si gn}C films. The agglomerations of Ni(Pt)Si films formed at 900ºC are	consisted of Si, Ni and Pt, with Si and Ni(Pt) in large quantities characterizing the agglomerations as Ni(Pt) silicide. Moreover, EDS spectra taken in the region out of	agglomerations show a very high quantities of Si against a low	quantities of Ni and Pt, indicating high degradation of the film with less Ni(Pt) silicide layer on Si.
Energy Transfer Between ALQ3 and Rhodamine in a Thin Solid Film
Authors: Fazenda R. D. , Fernandez Francisco J. , Salcedo Walter J. 
Published: November 2007

The energy transfer between tris(8-hydroxyquinoline) aluminum (Alq3) and rhodamine (Rh590) molecules is investigated in thin solid films. The films were obtained by spin-coating of	polystyrene(PS) solution doped with these molecules on a glass	slide. The energy transfer was inferred through emission spectra, of each molecule film and blend films, and absorbance spectra of blend film. Changing the molecules concentration in the blend films an optimised transfer rate of 86% (Rh590 radioactive photons / Alq3 radioactive photons) was reached.
Phosphorus Double-Diffused Emitter Silicon Solar Cells: Emitter and Metal-Grid Theoretical Optimizations on the Contour Plot View
Authors: Stem N. , Cid M. 
Published: November 2007

Despite many theoretical optimizations have been presented, a reoptimization aiming to completely understand Gaussian profile and Phosphorus emitters was performed, considering the currently adopted parameters and light trapping effect. This work is focused on studying doublediffused (n++n+) emitter solar cells (DD), keeping constant a low sheet resistance under the metal-contacted region, 13W/square. The metal-grid optimization was done taking into account the dependence on the	metalsemiconductor contact resistance and on each studied emitter sheet resistance. The optimum emitters presented high quality: high collection efficiency and low total emitter recombination (<12 fA/cm2). Complete	structures (n++n+p) were also studied. The best efficiencies, h=25.7 - 26.0% were found for emitter surface doping concentration and thickness ranges, Ns=1x1018cm-3 - 1x1019cm-3 and 0.5mm<We<10mm, respectively.
Carbon Outdiffusion from Ni(C)/Pt/Si Structures During Nickel Silicide Formation by Rapid Thermal Annealing
Authors: Reise Ronaldo W. , dos Santos Filho S. G. , Doi I. , Furlan Rogério , Landers Richard 
Published: November 2007

In this work, it is investigated the carbon outdiffusion from Ni (C)/Pt/Si structures during nickel monosilicide formation at temperatures ranging from 600 to 800 ºC and its role on the thermal stability of the formed silicide. The Ni(C) films were codeposited onto Pt(1.5nm)/Si by e-beam having 60 % of Ni and 40 % of C. The results revealed partial carbon outdiffusion after Rapid Thermal Annealing (RTA) process at 600 ºC during 120s, as well	as a complete carbon outdiffusion above 700 ºC. On the other hand, carbon does not react with nickel and silicon during silicidation process by RTA. It outdiffuses from the silicide films and promotes decreasing of	the volumetric	density of the NiSi by increasing its thickness. The nickel silicide films were characterized by Rutherford Backscattering (RBS) spectrometry, X-Ray Diffraction (XRD) analysis and Auger Electron Spectroscopy	(AES). From these characterization techniques, it was obtained crystallographic phases (XRD), silicide stoichiometry (AES and RBS) and thickness (Profilometry).	The nickel silicide stoichiometry resulted NiSi for an RTA processing performed at 600 ºC during 120 s for both: with and without carbon in the Ni	film.