bluuebunny/crossref_metadata_2025_split huggingface dataset:
Entstehung von Eigen‐Zwischengitteratomen beim chemisch‐mechanischen Polieren von Silizium
Authors: Reichel J. 
Published: July 2007

AbstractEs wird die Entstehung von Eigen‐Zwischengitteratomen beim chemisch‐mechanischen Polieren in p‐leitenden Siliziumscheiben beschrieben. Die Identifizierung erfolgt durch Vergleich des Verhaltens mit Scheiben, in denen Eigen‐Zwischengitteratome durch Abschrecken erzeugt worden sind. In diesem Zusammenhang wurde der Einfluß der Oberflächenbeschaffenheit auf das Ausheilen des Defekts untersucht.
Three‐dimensional momentum density reconstructed from positron annihilation measurements of Si single crystals in comparison with compton effect results
Authors: Dlubek G. , Brümmer O. , Gerber W. 
Published: July 2007

AbstractThe three‐dimensional electron‐positron pair momentum density ϱep(p) is reconstructed with the help of the MIJNARENDS'‐analysis using angular correlation curves of 2γ‐positron annihilation‐radiation measured with pz parallel to the [100], [110], and [111] direction of a Si single crystal. ϱep(p) is compared with the electron momentum density ϱe(p) and ϱe(p) which are calculated on the basis of the independent particle model. These momentum densities are taken from the literature. It is shown that the most important differences between the experimental momentum densities ϱep(p) and ϱe(p) can be reproduced by the calculation on the basis of the independent particle model. Some experiences concerning the handling of experimental data and accuracy of reconstructed momentum densities are reported.
Die Temperaturabhängigkeit des Dotanteneinbaus bei der Abscheidung von Siliziumepitaxieschichten aus der Gasphase (II). Der Phosphoreinbau und die Größe der differentiellen molaren Lösungsenthalpie
Authors: Kühne H. 
Published: July 2007

AbstractDie differentielle molare Lösungsenthalpie für elementaren Phosphor in Epitaxiesilizium wird unter Berücksichtigung der Leitungselektronenkonzentration, die unter den Schichtabscheidungsbedingungen im Silizium vorhanden ist, aus dem Einbaugleichgewicht in an und für sich bekannter Weise ermittelt. Der Wert der für reale Lösungsverhältnisse aus den experimentellen Daten anderer Autoren erhaltenen Lösungsenthalpie beträgt +9,3 kcal/mol. Der für ideale Lösungsverhältnisse erhaltene Wert beträgt +7,1 kcal/mol und stimmt damit gut mit dem theoretischen Wert anderer Autoren von 6,9 kcal/mol überein.
Chemistry of organic eutectics (IV). α‐Naphthol‐β‐naphthol eutectic system
Authors: Singh N. B. , Singh Narsingh Bahadur 
Published: July 2007

AbstractThe detailed methods of investigating the phase diagram, supercooling, crystallization velocity, microstructure, and diffusion coefficient for the α‐naphthol‐β‐naphthol eutectic system have been discussed. The results are discussed in the light of existing theories describing morphology, nucleation, crystallization kinetics, and diffusion phenomena.
Kinetics of dissolution and calcium sulphate growth on {111} faces of calcium fluoride crystals etched in sulphuric acid
Authors: Desai C. C. , John V. 
Published: July 2007

AbstractThe effect of temperature (20–100°C) and concentration of H2SO4 etching solutions on the etching behaviour of {111} faces of calcium fluoride crystals is investigated. Whisker growth of calcium sulphate is observed. Temperature of the etchant also has an effect on their formation. The kinetics of dissolution at the sites of dislocations and general dissolution have been studied. Studies on induction period and its dependence on the concentration of the acid and temperature are also described. It is observed that: (i) at low and high acid concentrations, the dissolution is diffusion controlled while it is predominantly reaction‐rate controlled in the intermediate concentration range and (ii) the growth rate of calcium sulphate whiskers decreases with time and their induction period decreases with increase in the temperature of the solution. The implications are discussed.
Incorporation concentration dependence of phosphorus in the deposition of silicon epitaxial layers from silane‐phosphine‐hydrogen mixtures
Authors: Kühne H. 
Published: July 2007

AbstractThe empirical incorporation characteristic N with the phosphine input pressure (P) as the controlling variable and the phosphorus incorporation concentration ((14 < lg N<18)) as the controlled variable is theoretically explained by comparing the thermodynamic equilibrium pressures of the various phosphorous hydrides and the various molecular species of the phosphorus vapour in the SiPH system in their respective incorporation equilibria with regard to the phosphorus incorporation concentration. In the lower incorporation concentration range (lgN > 18) there is an almost total agreement of the values of the phosphine equilibrium pressure (PPHj; j = 2; 3) and the phosphine input pressure. In the upper concentration range (lg N > 18) there is a close approximation of the equilibrium partial pressure of the dimeric phosphorous vapour (PP2) to the phosphine input pressure. There is no marked effect of the conduction electron density in silicon at the deposition temperatures considered on the incorporation characteristic.
V‐ΔT and V‐λ relation for the naphthalene—adipic acid system
Authors: Singh N. P. , Singh R. N. , Singh O. P. , Singh Narsingh Bahadur 
Published: July 2007

AbstractThe mechanism of crystal growth from the undercooled melt is studied experimentally for the naphthalene‐adipic ac d system by means of a simple capillary technique. The microscopic observations for the 0.11 molefraction of naphthalene‐adipic acid mixture indicated lamellar structure. The relationship between lamellar spacing, λ, and crystallization velocity V was found to be λ2V = constant.
The influence of preageing and the cooling rate on the decomposition processes taking place during artificial ageing in AlZn/4.5at.%/Mg/X/alloys
Authors: Löffler H. , Kabisch O. , Gueffroy G. , Radomsky M. , Honyek Gy. , Ungár T. 
Published: July 2007

AbstractThe influence of pre‐ageing procedures and cooling rates on the processes taking place in AlZn/4.5 at%/Mg/1; 2; 3 at.% alloys during artificial ageing are studied by means of X‐ray small angle scattering and transmission electronmicroscopic investigations. The main results are: The stability of the precipitates grown during the pre‐ageing is increased by the increase of their size. The cooling rate is strongly influencing the decomposition processes at different ageing temperatures, Ta. Preageing procedures seem to affect the ageing behaviour at Ta remarkably only in the case when the pre‐ageing temperature is far enough from Ta.
Über die Richtigkeit und Genauigkeit bei der Messung von Netzebenenabständen
Authors: Vavrda J. 
Published: July 2007

AbstractIn der Arbeit wird der grundsätzliche Unterschied zwischen den Begriffen der Abweichung und des Fehlers betont. Die relative Abweichung als Maß der Richtigkeit kann durch das totale Differential ausgedrückt werden, während der relative Fehler als Maß für die Genauigkeit dient und durch das Fehlerfortpflanzungsgesetz berechnet werden kann. Von diesem Standpunkt werden die bisherigen Behandlungen der differenzierten Braggschen Gleichung im direkten und reziproken Raum erörtert und neu abgefaßt.
Investigations into TiC Refractory Layers on Steel Surfaces by Means of ESCA Spectra
Authors: Than E. , Leonhardt G. , Hopfe V. , Marx G. 
Published: July 2007

AbstractThe investigation of the element composition of TiCx layers depending on depth profiles shows that the samples stored on air are coated by a contamination layer of hydrocarbons. The subjacent layer consists of about 19 mole‐% Ti, 26 mole‐% C, 45 mole‐% 0 and less than 5 mole‐% of Cr and Fe. The change of the position of the C1s, 01s and Ti2p‐lines depending on depth profiles allows us to draw conclusions from changes in the chemical bonding states of these elements. — A detailed profile analysis of the C1s‐line shows five different bonding states of carbon (CyHx, TiCx, Fe3C, elemental C and 〉CO‐compounds). The change of the O‐ and Ti‐bonding states within the layer consists particularly in decreasing OH‐bond as compared with oxide‐bond and also of TiOx in comparison with TiCx.
Etching and Polishing Studies on MgO Crystals in Acids
Authors: Sangwal K. , Patel T. C. , Kotak M. D. 
Published: July 2007

AbstractThe effect of temperature and concentration of a variety of inorganic and organic acids, on etch rates is investigated. It is observed that in HCl, CH3COOH and C2H5COOH the value of activation energy of dissolution and that of the corresponding pre‐exponential factor are sensitive to acid concentration. In H3PO4 and HCOOH, while the value of activation energy remains unchanged, only the pre‐exponential factor changes. The concentration dependence of etch rates in HCl, CH3COOH and C2H5COOH is different from that of H3PO4 and HCOOH. In the former acids maximum and minimum values are obtained on the etch rate versus concentration curves, but in the letter ones etch rate slowly increases with concentration. The influence of temperature on the maximum value of etch rate on the etch rate‐concentration plots of HCl, and that of the degree of dissociation of the acids on etch rate are also studied. The observations are discussed, and important conclusions are enumerated.
Vergleichende Untersuchungen zur Genauigkeit der radialen Verteilungskurven am Beispiel des Kieselglases
Authors: Zickert K. , Steil H. , Geick C. , Herms G. , Becherer G. 
Published: July 2007

AbstractEs werden bereits seit vielen Jahren röntgenographische Strukturuntersuchungen an glasigem SiO2 durchgeführt. Ein Vergleich der im Rahmen dieser Arbeiten ermittelten RDF ist nur schwer möglich, da bei den Autoren unterschiedliche Fehler in den Meßanordnungen auftreten bzw. Unzulänglichkeiten in der Auswertung bestehen.Außerdem ist zu berücksichtigen, daß die verwendeten Proben teilweise strukturelle Unterschiede aufweisen können.Deshalb wurden unterschiedlich hergestellte bzw. behandelte Proben unter gleichen Bedingungen vermessen, um Informationen über strukturelle Unterschiede zu erhalten.Es erwies sich als notwendig, vergleichende Untersuchungen an einer „Standardprobe”︁, d. h. eines beliebigen, aber für alle Untersuchungen gleichen Präparates, durchzuführen, wobei auf unterschiedlichen Röntgengroßwinkel‐Diffraktometern nach verschiedenen Aufnahmetechniken gemessen wurde, um sowohl den Einfluß von Meß‐ als auch von Auswertefehlern zu erkennen.
In‐situ HVEM Investigations under the Influence of Ion Beams
Authors: Jesser W. A. 
Published: July 2007

AbstractA 200 kV ion accelerator was coupled to a 500 kV TEM for in‐situ studies of the 80 keV He+ irradiation of 316 stainless steel. Dynamic and static observations of bubble growth, exfoliation and blistering show that slip bands, incoherent twin boundaries and grain boundaries are preferred sites for helium bubble formation. Bubble growth is enhanced by plastic deformation during irradiation. Exfoliation and blistering occur in samples thinner than the projected range of 80 keV He+ ions. Crack propagation during tensile tests proceeds through the bubbles enlarging them in diameter by a factor of two. Bubble enlargement also accompanies the formation of a blister cap. Brittle intergranular failure, even in samples with a large bubble population on the grain boundaries, occurred only when tensile tests were performed at elevated temperatures.
The Molecular and Crystal Structure of 1Ref, 3trans‐bis (4‐chlorophenyl)‐2cis‐nitro‐5‐oxo‐perhydropyrazolo [1,2‐a]pyrazol
Authors: Kutschabsky L. , Kretschmer R. G. , Dorn H. 
Published: July 2007

AbstractThe structure of the title compound has been determined by means of an X‐ray analysis. This product has been obtained by a 1,3‐dipolar cycloaddition according to the concerted [π4S+π2S]‐mechanism. The substance crystallizes in the monoclinic space group C 2/c with 8 molecules in the unit cell of dimensions a = 23.587; b = 11.789; c = 12.932 Å; β = 95.47°. The molecular structure determined by X‐ray analysis agrees with the results of the chemical investigations. The final R‐value is 0.081.
Elastic Interaction of Point Defects with a Precipitation near a Solid Surface or an Interface
Authors: Michel B. 
Published: July 2007

AbstractThe paper deals with elastic interaction between point defects and a precipitate (region of precipitation) under the immediate influence excerted on the defects by an interface or a surface of the solid. A formula is presented taking into account an additional internal mechanical structure of the precipitation, such as variations of concentration or local dilatations. It is shown that the elastic interaction energy between point defect and precipitation can exceed the interaction energy between point defect and interface. Conclusions with respect to drift diffusion of point defects towards the defected region follow.
The influence of ambient gas atmosphere on the liquid and solid composition at liquid phase epitaxial growth of GaAs–Alx‐Ga1−xAs layers
Authors: Herrmann F. P. , Stadermann G. , Wagner G. 
Published: July 2007

AbstractEpitaxial gallium arsenide and gallium aluminium arsenide layers were grown from gallium solution on chromium‐doped semi‐insulating gallium arsenide. The effect of residual water concentration in the ambient gas atmosphere on change of aluminium in AlxGa1−xAs was determined. It was shown that a water concentration less than 5 ppm is necessary to grow epitaxial layers with high reproducible XAlAs‐content and low carrier concentration.
Investigation of GaAs—InyGa1−yPzAs1−z–InxGa1−x‐As grading heterojunctions formation
Authors: Bolkhovityanov Yu. B. , Bolkhovityanova R. I. , Yudaev V. I. 
Published: July 2007

AbstractThe initial stages of growth of GaAs–InGaAsPvar–InxGa1−xAs heterostructures (x = 0.1 and 0.17) were investigated for the equilibrium‐cooling method of LPE growth. Similar investigations were carried out for GaAs–InGaAsPvar–In0.05Ga0.95As heterocompositions, but for the step‐cooling technique.The scheme of growing of In0.17Ga0.83As films of GaAs substrates with several intermediate buffler InGaAsPvar layers is represented. These heterostructures were shown to have less than 106 cm−2 dislocation density on the overall area of the film (> 2 cm2).
A unified treatment of thickness homogeneity problems in CVD (I). Hot‐wall reactors
Authors: Arnold H. 
Published: July 2007

AbstractThe principal possibilities and limitations for improving macroscopic layer thickness homogeneity in the direction of the main gas stream in chemical vapor deposition (CVD) for electronic purposes are discussed. Approximative expressions are given for optimum temperature profiles in surface reaction‐controlled deposition of polycrystalline and amorphous layers, as well as for the optimum tilting angle of substrates out of the main gas stream in diffusion‐controlled deposition of epitaxial layers.
Influence of dopants and preparation method on the thermoluminescence properties of corundum crystals
Authors: Kvapil Jiři , Vitamvás Z. , Perner B. , Kvapil Jos. , Mánek B. , Adametz O. , Kubelka J. 
Published: July 2007

AbstractThermoluminescence (TL) of several types of corundum crystals is described. Undoped crystals showed a weak TL at 15 and 110°C with emission at 330 and 495 nm. Good TL response at 275°C is shown by Cr doped (0.03 wt%) crystals grown by Verneuil method in the oxygen cone of the flame annealed in hydrogen at 1500–1800°C.The most intensive TL response is shown by crystals doped with Ti and Mo (∼ 10−3wt.%) grown by Czochralski method in reducing conditions. The former may be used to the detection of γ‐rays dose ≥ 10−3 − 10−2 Gy, the latter ≥ 10−7 − 10−6 Gy.
Climb mechanisms and critical temperature in off‐stoichiometric V3Si
Authors: Paufler P. 
Published: July 2007

AbstractA dislocation climb model is proposed for both vanadium and silicon rich V3Si single crystals. Just the type of constitutional point defects is needed solely which dominates in the sample under consideration. The climb mechanism involves a conversion of one defect type into another and so may be responsible for the changes in critical temperature of the superconductor as observed after plastic deformation at elevated temperatures.
Investigation of alloys of Ti‐Zr system by the positron annihilation method
Authors: Dlubek G. , Gerber W. , Dekhtyar I. Ya. , Fedchenko R. G. , Kshnyakin W. S. 
Published: July 2007

AbstractAngular distribution measurements of annihilation photons were performed on seven different TiZr alloys having a Zr content between 0 and 39 at. %. The samples were cold rolled with 80% thickness reduction. Further, the angular correlation peak height was measured during time‐linear heating of deformed samples. The measured results were interpreted assuming positron trapping by the defect‐rich particle‐matrix interfaces of particles of the second phase produced during deformation (polymorphic α‐β transformation).
Investigation of iron‐cobalt alloys by means of electron spectroscopic methods
Authors: Berndt K. , Storbeck F. 
Published: July 2007

AbstractThe results of electron spectroscopic investigations are presented for a number of FeCo alloys. Besides X‐ray photoelectron spectroscopy the Auger spectrometry, appearance potential spectroscopy and electron loss spectroscopy are used. From these data conclusions are drawn about the electronic structure of the FeCo alloy system, among other things in the dilute limit.
The Growth and Characterization of Hydrogen (Deuterium) — Bonded Ferroelectric Crystals of Schultenites PbHAsO4, PbDAsO4 PbHPO4 and PbDPO4
Authors: Březina B. , Havránková M. 
Published: July 2007

AbstractSingle crystals of lead hydrogenarsenate, lead hydrogenphosphate and deuterated analogues have been grown from water solution, further, by means of various chemical reactions in water solutions and polyacrylamide hydrogel. The growth conditions, morphology of crystals, their imperfections and some physical properties have been studied.
Thermodynamic Studies on Ternary Mixed III‐V Systems
Authors: Peuschel G.‐P. , Knobloch G. , Butter E. , Apelt R. 
Published: July 2007

AbstractKRUPKOWSKI's formalism of excess free enthalpy has been applied to the ternary systems Pb‐In‐Sb and Ga‐In‐As. The necessary binary KRUPKOWSKI parameters has been obtained from binary liquidus data or EMF measurements. The results of calculation are compared with experimental liquidus, solidus and vapour pressure data.
Growth of single crystals of barium iodate and strontium iodate in silica gels
Authors: Joshi M. S. , Trivedi S. G. 
Published: July 2007

AbstractSingle crystals of iodates of barium and strontium grown by gel method are reported. Optimum conditions for good quality single crystals are worked out. Different habits of these crystals are reported. A brief report for characterization of these crystals by different methods is given.
The crystal structure of 1‐anilino‐3‐phenylimino propene‐(1), C15H14N2
Authors: Kulpe S. , Schulz B. 
Published: July 2007

AbstractThe 1‐Anilino‐3‐phenylimino propene‐(1) crystallizes in the Iba2 space group having the lattice constants a = 20.132 Å; b = 16.102 Å; c = 7.683 Å. The elementary lattice cell contains 8 molecules. The intensities were measured by means of an automatic fourcircle diffractometer. The structure was clarified by a direct phase determination. The refinement was carried out by means of the least squares method for 1532 symmetryindependent reflections up to an R‐value of 0.10.The molecular structure is more similar to that of the asymmetric polymethine merocyanines, and less to the symmetrical polymethine cyanines. This is due to the different electronic structure of the amino and imino groups in the molecule. The molecules are electrically neutral. The intermolecular contacts are made through N‐H…N hydrogen bridges and van‐der‐Waals contacts between C‐ and H‐atoms.
Dielectric Relations of Nematic 4‐n‐Heptylamino benzoic Acid in Mixtures with 4‐Cyano benzoic Acid and 4‐Fluoro benzoic Acid
Authors: Kresse H. , Sharma N. K. , Weissflog W. 
Published: July 2007

AbstractDielectric constants and the dielectric loss in the frequency range from 0.1–12 MHz were measured in the binary systems of 4‐n‐heptylamino benzoic acid with 4‐cyano benzoic acid and 4‐fluoro benzoic acid in the nematic phase. Not only the strong increase of dielectric anisotropy, but also the appearance of a Debye relaxation in the MHz range in both the mixtures proves the existence of the mixed associates. This model was proved by the temperature dependence of relaxation times and on chemical structure of the mixed associates, as well as, by the comparison with the measurements of one more binary system of acids.
Kerr effect studies of the isotropic‐smectic phase transition of liquid crystalline 4‐nitrophenyl 4‐n‐alkoxybenzoates
Authors: Hauser A. , Demus D. 
Published: July 2007

AbstractThe static and dynamic pretransitional behaviour at the isotropic‐smectic A phase transition was investigated by the electric Kerr effect and compared with the behaviour at the isotropic‐nematic phase transition. Close above the smectic A‐isotropic transition temperature a strong divergence and a deviation from the behaviour according to the Landau – de Gennes model (which was upheld far from the clearing temperature) was observed for both the Kerr constant and the Kerr relaxation time. The Kerr relaxation times near the smectic A‐isotropic phase transition exceed that of the isotropic‐nematic transition by more than a factor of 4 which is due to the existence of quasi smectic cybotactic groups in the isotropic phase.
Application of the Lang Topography Survey Technique to Highly Deformed Large Aluminium Crystals
Authors: Novikova I. G. , Startsev V. I. 
Published: July 2007

AbstractThe authors consider the specific features of the Lang X‐ray topographic technique applied to the investigation of changes produced in large aluminium single crystals by uniaxial tension causing moderate to high strains. The method of the stereographic projection is discussed as the means to choose the survey conditions and decipher topograms both for the starting plastic deformation stage and for the deformation process.
Field‐induced texture conversions in smectic A, B and C phases
Authors: Pelzl G. , Deutscher H.‐J. , Demus D. 
Published: July 2007

AbstractThe field‐induced texture conversions in smectic A, B and C phases were studied for 7 liquid crystalline compounds. The threshold voltage of the effect was measured in dependence on the temperature and the layer thickness. The results are discussed.
Effect of electrical field on growth of gallium arsenide layers from vapour phase
Authors: Lavrentieva L. G. , Ikonnikova G. M. , Krasilnikova L. M. 
Published: July 2007

AbstractThe effect of electrical fields on the growth rate and morphology of gallium arsenide layers in the GaAsAsCl3H2 system is investigated. The fields both parallel and perpendicular to the substrate surface are used. It is found that application of the parallel field results n increase of growth rate of (111)A face but does not change that of 2° (001). The morphology of layers grown in such a field is better than that grown without any. The application of perpendicular field results in decrease of growth rate for both crystallographic orientations, the layer morphology worthening. In both cases the effect is greater when the substrate has a negative potential. Possible mechanisms of the field influence on the growth rates of gallium arsenide layers are discussed such as: supersaturation decrease because of nucleation in vapour phase and the change in the rates of surface processes.