bluuebunny/crossref_metadata_2025_split huggingface dataset:
Active Trimming of Hybrid Integrated Circuits
Authors: Németh P. , Krémer P. 
Published: June 2007

One of the more important fields of the microelectronics industry is the manufacturing of hybrid integrated circuits.An important part of the manufacturing process is concerned with the trimming of the hybrid integratedl circuits. This article deals with the basic principles of active trimming and introduces a microprocessor controlled trimming machine. By comparing active trimming with passive techniques, it can be shown that the active system has some advantages. This article outlines these advantages.
Electrochemical Migration in Thick‐Film IC‐S
Authors: Ripka Gabor , Harsanyi Gabor 
Published: June 2007

The phenomenon of silver migration in conductor‐insulator systems is well known, but it is less known that several other metals can exhibit migration. This paper tries to give a short summary of the phenomenon as applied to thick‐film circuits.Tests have been made on different conductors used in thick‐film circuits. The dendrites formed by electrochemical migration were examined by scanning electron microscope, and also by wavelength‐dispersive analysis of the emitted x‐rays. By obtaining secondary and back‐scattered electron images, x‐ray maps and profiles, it can be determined which components cause migration in the conductor in question.Photos are presented illustrating the results.Thermal Humidity Bias test was also performed in controlled environmental chambers in order to get a comparison between different thick film systems.
Stability Observations and Surface Analysis of Air Fired Nickel Thick Film Conductors
Authors: Pranchov R. B. , Campbell D. S. 
Published: June 2007

The results from an investigation of the properties of air fired Nickel thick film produced with conductive paste ESL 2554 on 96% Al2O3 substrates are described. The analysis of the possible causes of instability
of this thick film material has been done using the methods of surface analysis. The picture of the film surface structure obtained as a result of surface analysis shows a non‐isotropic distribution of the metal and glass phase. For a firing peak temperature of 650℃ there is little nickel present at the film surface, and this could be the main cause of the high instability and low adhesion observed. To obtain a stable film the maximum firing peak temperature has been established at 580℃. This has been confirmed by comparing the surface analysis results from films prepared at 650℃ and 580℃ peak temperatures.The surface analysis of the substrate shows the presence of Silicon which may be considered as another possible cause of film instability.
Electrical Behaviour of Langmuir Films: A Review, Part I
Authors: Agarwal V. K. 
Published: June 2007

The electrical behaviour of thin films obtained by a variety of processes, e.g. thermal evaporation in vacuum, have been extensively studied. However, the study of organic mono‐ and multilayer films obtained by the
Blodgett–Langmuir technique (commonly referred to as Langmuir films) has gained considerable momentum only during the past decades. Unlike evaporated films, the striking features of these organic films are their controllable
thicknesses down to one monolayer (~ 25 Å) and the possibility of obtaining them free from holes and conducting imperfections. The aim of this paper is to describe the film deposition techniques, some of the properties of the films so obtained and to review their electrical behaviour. It is also intended to make this review a comprehensive
and up‐to‐date source of information for those who are either already engaged in this field or are planning to make
Langmuir films the subject for future investigations.In this survey, emphasis is put on problems worth further study to obtain greater insight into the basic properties of these films. Further, since they possess some interesting electrical properties, this paper may prove useful in the assessment of our depth of knowledge about them and in reducing the existing gap between basic research and technological applications. Thus their potential usefulness in the development of devices is also discussed.The survey is divided into two parts. Part I is concerned with deposition techniques, the physical properties of
Langmuir films and certain electrical properties, namely dielectric behaviour and electrical conduction phenomena.
Part II, which will appear in the next issue, will be concerned with electrical breakdown behaviour, voltage
induced changes in electrical behaviour (forming) and ionic transport phenomena in the films and will finish with
suggestions as to future trends in work with such films together with a summary of possible applications.To assist the reader, the two parts have been numbered consecutively with regard to sections of the text, figures and references.
Heat Dissipation and Ripple Current Rating in Electrolytic Capacitors
Authors: Hayatee F. G. 
Published: June 2007

The ripple current rating in electrolytic capacitors is limited by the maximum allowable temperature rise inside the
capacitor. The temperature rise is determined by the I2 R losses inside the capacitor and the efficiency of heat flow
from the interior to the surrounding. The ripple current rating can be extended by either reducing the tan δ of the
capacitor or by increasing the efficiency of heat flow to ambient.The heat flow is determined by the thermal characteristics of the capacitor surface and thermal conductivity of
the medium separating the capacitor winding from the surrounding.In this article a mathematical analysis for the heat flow in capacitors is given. The effects of various parameters
are examined and methods of extending the ripple current rating are discussed.
Production of Resistors by Arc Plasma Spraying
Authors: Smyth R. T. , Anderson J. C. 
Published: June 2007

Arc plasma spraying (APS) is an accepted method of producing coatings for many engineering applications. The
wide range of materials that can be used to form the thick film coatings make this technique interesting as an
alternative method of producing electrical components and circuits.The manufacturing procedure is outlined and the potential advantages of this method of making thick film
resistors are listed.The effect on the physical and electrical properties of the films produced by variation of the arc plasma gun
current, gas flow rate and powder particle size are reported together with the effect of varying gun/substrate
distance and the topography of the substrate surface.It is shown that using a mixture of NiO and Fe3O4 powders with a particle size range of 1–20 μm it is possible
to produce films on a glass substrate with sheet resistivities from 5–500 Ω/sq; temperature coefficients of resistance
vary from +20 to −8 × 10−4 per ℃, depending on resistor composition and film thickness.The results given for a 10,000 hour life test carried out at 150℃ in air show a mean charge in resistance of ~−5%.It is concluded that APS offers a viable method of producing thick film resistors and conductors on low cost
substrates.
Etude de la Conduction Ionique du βPbF2
Authors: Gianduzzo J. C. , Pistre J. , Salardenne J. 
Published: June 2007

Measurements were made with sintered samples in vacuum at 10−5 torr. Voltages of frequencies varying between
0.1 and 5 × 104 Hz at different temperatures (300 to 500 K) were used. The impedance diagrams show two regions.1) a circular diagram in the high frequency region.2) a poorly defined diagram in the lower frequency region.The different temperatures yield circles centered on a straight line making an angle απ/2 = 20° with the real axis.The loss factor (Tan δ) variation as a function of log ω shows a relaxation peak clearly different when
compared to the one obtained by Debye′s mechanism. These two effects are due to a certain ion mobility
dispersion. The curve shape is affected by the applied voltage only in the low frequency region, for which results
may be explained by invoking a space charge effect due to partially blocking electrodes, whereas the high frequency phenomena represent the material′s intrinsic conduction.By extrapolating the impedance diagram, the sample dc conductivity σ was determined. The measured activation energy was found equal to 0.47 eV.Les mesures ont été effectuées sous un vide de 10−5 Torr sur des échantillons de βPbF2 préparés sous forme de
pastilles frittées. Les résultats se rapportent à une étude faite en courant alternatif dans une gamme de fréquences
allant de 0,1 à 5 × 104 Hz pour des températures comprises entre 300 et 500 K. Le tracé des diagrammes d′impédance fait apparaître deux parties:1) aux fréquences les plus élevées on obtient un arc de cercle.2) aux basses fréquences la partie circulaire se prolonge en une courbe mal définie.Les cercles obtenus pour différentes températures sont centrés sur une droite faisant un angle απ/2 = 20° avec l′axe réel. La variation du facteur de pertes tgδ en fonction de log ω fait apparaître un pic de relaxation dont la forme diffère notablement de celle qui correspondrait à un mécanisme de Debye. La forme de la courbe n′est
affectée par l′amplitude de la tension appliquée que dans la région des basses fréquences.Une explication qualitative de ces résultats est donnée, basée sur la création d′une charge d′espace à basse fréquence et sur une certaine dispersion de la mobilité des ions participant à la conduction. Par extrapolation du
diagramme d′impédance la conductivité en continu σ de l′échantillon a pu être déterminée. La mesure de son énergie
d′activation a été trouvée égale à 0,47 eV.
Electroless Plating – Its Applications in Resistor Technology
Authors: Dearden J. 
Published: June 2007

Electroless processes for the deposition of metal films onto insulators have been known for many years. Various aspects of this technology have been applied in the field of resistor technology leading to improved performance of existing resistors and the evaluation of new resistors with novel characteristics.The applications of electroless nickel as a readily solderable, completely ohmic contact for tin oxide resistors is described.Copper oxide layers produced from oxidised electroless copper are shown to improve the thermal stability of tin oxide resistors.A range of electroless high precision metal film resistors from a fraction of an ohm to 100 kohm per square and from a few millimetres in length to over 1 metre is shown to be feasible. This technology has been applied to the manufacture of thin film circuits.The outstanding thermal stability of the electroless nickel‐boron films and their temperature coefficient of resistance indicates a potential application in the field of temperature sensors.The ability to produce “weightless” films on Mylar sheet at 10 Gohm per square is considered to be a solution to the charge distribution requirement for electrostatic loudspeakers.
Conduction Processes in Thick Film Resistors. Part I
Authors: Ansell M. P. 
Published: June 2007

The structures of three families of thick film resistors have been investigated by scanning electron microscopy and electron probe micro‐analysis. The two principal components of the resistive glazes, that is the conducting pigment and the glassy binder, have been identified in each case. The pigments were found to be simple or ternary oxides of the Pt transition metal group and Pd/PdO/Ag alloys. The glassy binders were based on lead borosilicate glasses.A model for the electronic conduction processes through the glass and pigments is proposed on the basis of the observed physical structures, the measured electrical properties of resistors and the properties of the component resistor materials.Part I of the total paper is concerned with identifying the phases in various Thick Film Resistors and part II considers the conduction processes that are appropriate.
The Electrical Resistivity of Monocrystalline Films Deduced From Derivation of the Mayadas‐Shatzkes Equations
Authors: Tellier C. R. , Tosser A. J. 
Published: June 2007

The theoretical expression deduced by Mola and Heras from the Mayadas–Shatzkes model of monocrystalline
thin film resistivity is approximated assuming that the Sommerfeld relation is valid and introducing corrections to the
Matthiessen′s rule.The approximate expression of kρf /ρ0 deviates
from less than 6% in the 0.01–2 k‐range, 0–0.5 p‐range
and 0.1–0.62 r‐range.
The Determination of the Thickness of Anodic Al2O3 Film
Authors: Van Schuur R. 
Published: June 2007

To compare the properties of anodized aluminium oxide layers an easy thickness determination method is wanted. Crevecoeur and De Wit used a method expressing the thickness in terms of peak voltages obtained by forming again after annealing. The aim of the work described here is to relate the value of the peak voltage to the thickness of the layer measured by ellipsometry.On specimens formed in an aqueous solution of b oric acid and ammonium hydroxide the following relation is found between the thickness d (nm) and peak voltage Vp (volt):d = 1.020 Vp + (0.00044 ± 0.00011) . On specimens formed in a solution of ammonium pentaborate in ethylene glycol the squared Vp term is of a lower value. however when Vp is less than 150 V the above relation holds for layers formed in both electrolytes, the systematic error then being less than 1%.
The Production of Complex Thin Film Circuits
Authors: Needham V. 
Published: June 2007

In‐house manufactured thin film circuits are used by Lucas Aerospace in gas turbine engine fuel control systems where stability and reliability in a harsh environment are required.The construction of a complex active thin film circuit is reviewed with emphasis on some less obvious aspects of production. Where component attachment and engineering techniques used are thought to be of special interest a more detailed explanation is given.As is normal in the avionics industry a high degree of system integrity is required so that quality control is essential. Therefore, the role of Quality Engineering in the production plan is described.
Electroforming, Switching and Memory Effects in Oxide Thin Films
Authors: Oxley D. P. 
Published: June 2007

Experiments on electroforming of Metal‐Oxide‐Metal thin film sandwiches which have been electroformed to exhibit voltage‐controlled negative resistance are summarized and an outline of recent evidence in favour of localized or filamentary conduction is given.A similar review is given of the experiments on oxide sandwich structures which have been formed to exhibit current‐controlled negative resistance or threshold switching and memory switching. Current theories are reviewed briefly. Finally oxide memory devices are compared with those based upon the chalcogenide glasses.
Semiconductor Materials for Future Display Devices
Authors: Tansley T. L. , Owen S. J. T. 
Published: June 2007

The large majority of solid state lamps currently available take advantage of the phenomenon of electroluminescent
recombination at forward biased p–n junctions (homojunctions) in III–V compound semiconductors or related
derivatives (GaP, GaAsP, etc.). The range of colours, sizes and luminous efficiencies likely to become available are subject,
however, to certain fundamental limitations of the materials used. These are related to the size and nature of the forbidden
energy gap, crystal defect structure as well as other factors. Applications will also be limited by the range of promising
non‐semiconductor display systems in advanced stages of development against which large LED arrays will not be able to compete.Restricting these applications to the more viable small alphanumerics and indicator lamps, however, alternative
semiconductor materials with extremely attractive physical properties exist, although other problems take the place of
those mentioned above. For example, most of the II–VI compound semiconductors (CdS, ZnSe, etc.) cannot be
doped both n and p type, precluding the manufacture of p–n diode lamps.In this paper the desirable properties of materials to be developed for future lamp applications are briefly discussed,
against background data on current materials, semiconductor materials fulfilling these criteria are introduced and ways
in which existing technological difficulties may be circumvented are described.The paper is concluded with comments upon arguably the most interesting development of recent years, the
interfacing of silicon with low voltage excitable “phosphors” in the form of oriented epitaxial
semiconductor films. Preparation, properties and advantages in direct integration with SIC addressing machinery
are outlined.
Reactive Sputtering of NiCr Resistors With Closely AdjustableTemperature Coefficient of Resistance
Authors: Griessing Jürgen 
Published: June 2007

A process is described to obtain NiCr resistors with adjustable temperature coefficient of resistance (TCR) by
reactive sputtering in an Ar‐atmosphere with a small amount of oxygen in the range of 2% to 6%. As deposited the
films show a TCR < −200 ppm/K. By heat treatment in air at a temperature of 350°C the TCR can be raised to
values above −20 ppm/K. The time of heat treatment necessary to obtain a given TCR depends on the oxygen/argon
ratio during sputtering. The long term stability is not affected by the choice of this ratio in a wide range.Resistor networks with a solderable conductor pattern of TiPdAu have a TCR of 0±7 ppm/K and a long term
resistance drift ≤ 2‰ in the first 1,000 hours at 125°C.
UHV – Deposited Amorphous Tantalum and Tantalum–Nickel Films
Authors: Schäfer Alfred , Menzel Günther 
Published: June 2007

Tantalum produced by ultra‐high vacuum vapour quenching has been identified on the basis of various forms of
evidence as amorphous tantalum. Tantalum in this amorphous form has a resistivity of 230 μΩ cm and a temperature
coefficient of resistivity (TCR) of –60 ppm/K. The films are stable below –90°C. At higher temperatures the
amorphous structure suddenly turns into coarse‐grained α tantalum.Alloying with a mole fraction of 20% to 55% resulted in amorphous tantalum‐nickel films with a temperature
coefficient between –300 ppm/K and +500 ppm/K. The structure of the tantalum‐nickel films, which are stable up
to 300°C, was investigated by transmission electron microscopy.Deposition of the tantalum on substrates heated to temperatures between –80°C and +150°C resulted in β tantalum, which turned into α tantalum between 160°C and 240°C. The appearance of positive and negative
temperature coefficients in the amorphous films indicates that even in the amorphous state different conduction
mechanisms may exist. According to the clean deposition conditions no influence of the residual gas on the film
properties can be expected.
Hybrid‐Integrated Series‐to‐Parallel Converters for Gigabit Rates
Authors: Hanke G. 
Published: June 2007

The generation and processing of data signal sequences in the gigabit range make high demands on circuitry and
technology. For this high‐speed thick‐film switching circuits have proved successful. With a suitable circuitry, which
is tailored to both the requirements of the subnanosecond range and the conditions of the thick‐film technique, it is
possible to solve many problems connected with the generation and processing of data signals in the gigabit range.The conventional method of series‐to‐parallel conversion with shift registers can, however, not be applied at
justifiable costs with the present‐day components. Therefore signal processing at the receiving end by bit error rate
measuring equipment at bit rates from 640 Mbit/s up to 1,28 Gbit/s is used to demonstrate hybrid‐integrated thick‐film
circuits which, in connection with coaxial and strip lines, allow the series‐to‐parallel conversion of high bit rates.The principle applied here uses lines as storing elements and high speed gates as switches. By supplying the data
signal as well as the shift and sampling clocks in a serial mode, it is possible to obtain a geometrically linear
arrangement of the thick‐film circuits so that problems of clock supply and differing signal delays can be excluded.
The combination of a few extremely high‐speed thick‐film circuits with commercial monolithic circuits allows
series‐to‐parallel conversions to be performed in a simple, reliable and flexible way and in any conversion ratio.
Resistor Geometry Comparison With Respect to Current Noise and TrimSensitivity
Authors: Ulbrich W. 
Published: June 2007

The paper deals with laser trimming of film resistors. The finite‐difference solution of the electric field calculated by
a digital computer gives the total resistance and the inhomogeneous current distribution within the resistor area. The
current noise voltage was found to be proportional to the sum of reciprocal subareas wherein the current density is
approximately constant. Resistor trimming is modelled by finite increments of cut length to obtain the resistance
trim rate and the trim sensitivity.Known and new resistor geometries and cut configurations are compared (based on the same resistor area and
the same initial tolerance of ± 20%) to find the optimal geometry depending on the ratio of the nominal resistance
value to the sheet resistivity. Diagrams are given leading to practical design rules not only for resistance trimming but
also for deterministic and functional tuning.
Biotelemetry and Radiotracking of Wild Birds: Portable Device Using Solar Cells Power Supply
Authors: Aucouturier J. L. , Chaillou A. , Nicolas G. , Canivenc R. , Govaerts R. , Mertens R. , Lauwers F. , Van Overstraeten R. J. , Marques M. 
Published: June 2007

A thick film hybrid transmitter for the radio tracking of wild animals is described. Weight considerations are of
prime importance for such transmitters and the system discussed uses thick film hybrid technology, together with a
solar cell power supply charging Cd–Ni batteries.To reduce power consumption a pulsed system is used; the transmitter operating frequency is in the 72 MHz
band.
A High Voltage, High Performance Thick Film Resistor System
Authors: Stein Sidney J. , Huang Cornelius , Gelb Allan S. 
Published: June 2007

This paper describes a new series of thick film resistors based on a ruthenium‐compound semiconducting phase,
dispersed in a carefully selected and compatible glassy matrix. Analysis of the electrical properties of these resistors
indicates that the conducting networks present in the structure include ohmic, non‐ohmic and insulating barriers.Experimental results on the resistors are discussed in terms of resistivity and TCR vs. firing parameters. The effect
of termination materials and resistor geometry, voltage coefficient of resistance, power loading and high voltage
properties are also discussed.
Improvement of Adhesion, Line Definition, Contact Resistance and Semiconductor Properties by Sputter‐Etching
Authors: Kallfass T. 
Published: June 2007

In an RF‐sputtering unit, with suspended substrates mounted in lieu of a target, sputter‐etching of the substrates
and consecutive vapor deposition of Au is performed in order to achieve good adhesion of the Au‐film without an
adhesion layer. The method has been applied for surface‐acoustic‐wave filters on piezo ceramics and for noise
measurements in Au‐films on sapphire. The sputter‐cleaning as described also reduces the disturbing contact resistance
between the conductive Cr‐Au‐layers and the previously sputtered Ta‐film.Considerable progress has also been made in the manufacture of thin‐film transistors by photolithography,
chemical etching, and sputter‐etching instead of using evaporation masks.