bluuebunny/crossref_metadata_2025_split huggingface dataset:
The role of angiotensin II in stress urinary incontinence: A rat model
Authors: Phull Hardeep , Salkini Mohamad , Escobar Christina , Purves Todd , Comiter Craig V. 
Published: October 2006

AbstractAimsPharmacological treatment for stress urinary incontinence (SUI) is limited to the use of non‐selective alpha‐agonists, which are often ineffective. Non‐adrenergic mechanisms have also been implicated in urethral closure, including angiotensin II (Ang‐II), which has been demonstrated throughout the urinary tract. We investigate the role of Ang‐II in urethral tone in a rat model of SUI.MethodsAbdominal leak point pressure (ALPP) and retrograde urethral pressure profilometry (RLPP) were measured in 70 female virgin rats. Thirty rats underwent pudendal nerve injury (PNT), 30 had circumferential urethrolysis (U‐Lys), and 10 had sham surgery. Rats received daily doses of Angiotensin Type 1 (AT‐1) receptor inhibitor (20 mg/kg), Angiotensin Type 2 (AT‐2) receptor antagonist (10 mg/kg), or Ang‐II (2 mg/kg).ResultsFollowing U‐Lys, RLPP and ALPP decreased from 21.4 ± 2.0 and 39.2 ± 3.3 mm Hg, to 13.1 ± 1.5 and 21.6 ± 1.9 mmHg, respectively (P<0.01). After PNT, RLPP, and ALPP decreased from 21.0 ± 1.6 and 41.9 ± 3.0 mmHg to 13.1 ± 1.5 and 24.7 ± 3.3 mmHg, respectively (P<0.01). AT‐1 inhibitor caused significant decrease in RLPP and ALPP from 21.0 ± 6.2 and 41.8 ± 9.4 mmHg, to 12.0 ± 3.8 and 25.6 ± 6.6 mmHg, respectively (P<0.01). Likewise, AT‐2 treatment reduced RLPP and ALPP from 21.4 ± 6.3 and 40.1 ± 1.7 mmHg, to 13.5 ± 5.7 and 31.0 ± 7.2 mmHg, respectively (P<0.01). Following surgery, Ang‐II administration restored RLPP and ALPP to baseline presurgical values.ConclusionsAT‐1 and AT‐2 receptor inhibition significantly lowers urethral resistance, comparable to either neurogenic or urethrolytic injury. Ang‐II treatment restored urethral tone in rats with intrinsic sphincter dysfunction. Ang II appears to serve a functional role in the maintenance of urethral tone and stress continence. Neurourol. Urodynam. © 2006 Wiley‐Liss, Inc.
Novel epigenetically deregulated genes in testicular cancer include homeobox genes and SCGB3A1 (HIN‐1)
Authors: Lind GE , Skotheim RI , Fraga MF , Abeler VM , Esteller M , Lothe RA 
Published: October 2006

AbstractTesticular germ cell tumours (TGCTs) are classified into two main histological subgroups: seminomas and non‐seminomas. The latter comprise several subtypes: embryonal carcinomas, yolk sac tumours, choriocarcinomas, and teratomas. These embryonal and extra‐embryonal‐like differentiation lineages represent a caricature of early normal development, and inactivation of gene expression through promoter hypermethylation may therefore be of particular importance in germ cell tumourigenesis. The promoter methylation status of ten candidate genes—CDH13, DLX6, EMX2, HOXA9, HOXB5, MSX1, MSX2, RASSF1A, RUNX3, and SCGB3A1 (alias HIN‐1)—was assessed by methylation‐specific PCR in seven intratubular germ cell neoplasias and 55 primary TGCTs. Furthermore, by a discovery‐based global approach, comparing cDNA microarray expression profiles of two germ cell tumour cell lines before and after treatment with the demethylating agent 5‐aza‐2′‐deoxycytidine, a gene list of potentially epigenetic targets was identified, from which CGGBP1, CGRRF1, SMARCC2, SORBS1, and XPA were analysed further. Overall, the non‐seminomas were significantly more often methylated than were seminomas (p < 0.001). The three most frequently methylated genes among this subtype were SCGB3A1 (54%), RASSF1A (29%), and HOXA9 (26%). CDH13 and HOXB5 were methylated at low frequencies (10–15%), and EMX2, MSX1, RUNX3, SORBS1, and XPA only rarely (<10%). In conclusion, this study has identified several novel epigenetically deregulated target genes in TGCT development, including homeobox genes and SCGB3A1, suggesting that epigenetic inactivation of key genes in normal development also has an important role in TGCTs. Copyright © 2006 Pathological Society of Great Britain and Ireland. Published by John Wiley & Sons, Ltd.
Pulmonary dysfunction in pediatric hematopoietic stem cell transplant patients: Non‐infectious and long‐term complications
Authors: Gower W. Adam , Collaco J. Michael , Mogayzel Peter J. 
Published: October 2006

AbstractPulmonary complications are among the most frequently encountered sequelae of pediatric hematopoietic stem cell transplantation (HSCT). Non‐infectious complications are becoming increasingly more common in this unique population. This review addresses the diagnosis and management of non‐infectious manifestations of lung disease in pediatric HSCT patients and briefly discusses the long‐term pulmonary function of childhood HSCT survivors. Pediatr Blood Cancer 2007;49:225–233. © 2006 Wiley‐Liss, Inc.
Validity and consequence of informed consent in pediatric bone marrow transplantation: The parental experience
Authors: Benedict Jan M. , Simpson Christy , Fernandez Conrad V. 
Published: October 2006

AbstractBackgroundConditions supporting a high quality of consent for pediatric bone marrow transplantation (BMT) are suboptimal given the complexity of the procedure, lack of options, and parent emotional duress. We studied if parents perceived choice when consenting to BMT, if they felt the consent provided was valid, and how the consent process affected them.MethodsTelephone or face‐to‐face interviews were recorded using a semi‐structured interview outline. Interview transcripts were anonymized, and independently analyzed by three reviewers.ResultsTwenty parents of twelve children participated, including five bereaved parents. There were no differences in patient transplant characteristics between the eligible and study groups. Divorced or separated parents were underrepresented in the participant group. Fifteen parents felt personally compelled to consent; most (18) denied feeling external medical pressure to do so. All parents felt their consent was valid and most reported adequate levels of freedom, capacity, and information. Expectations formulated during the consent process strongly influenced parents' experience post‐BMT. Good communication during consent contributed to trust and therapeutic alliance with physicians following BMT. Late parental stress and anxiety were periodic, but very high in some families.ConclusionsParents feel consent for pediatric BMT is valid, despite feeling personally compelled to consent. Strategies aimed at nurturing hope and realistic expectations may assist in improving the consent process, while diminishing long‐term stressors. Pediatr Blood Cancer 2007;49:846–851. © 2006 Wiley‐Liss, Inc.
One‐step etch‐through porous silicon membrane with an open cavity and pore size tuning
Authors: Kan P. Y. Y. , Finstad T. G. 
Published: October 2006

AbstractA thin porous silicon (PS) membrane has been fabricated by electrochemical etching in a hydrofluoric acid (HF) electrolyte in a simple new process. Membrane areas (0.3 mm2) were defined photolithographically by SU8 negative resist. The etching current was varied during the single‐step process to define the thickness of the membrane by electrochemically thinning the Si wafer at high current followed by a lower current pore formation and etch through. The process is simple and fast being completed in less than 2 hours for standard Si wafers. Different ways of improving robustness, yield, etch resistance of the mask, membrane uniformity, pore sizes control and applications are discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Surface electronic properties of H‐terminated diamond in contact with adsorbates and electrolytes
Authors: Nebel C. E. , Rezek B. , Shin D. , Watanabe H. 
Published: October 2006

AbstractA comprehensive summary of surface electronic properties of undoped hydrogen terminated diamond covered with adsorbates or in electrolyte solutions is given. The formation of a conductive layer at the surface is characterized using Hall effect, conductivity, contact potential difference (CPM), scanning electron microscopy (SEM), and cyclic voltammetry experiments. Data are from measurements on homoepitaxially grown CVD diamond films with atomically smooth hydrogen terminated surfaces. The data show that due to electron transfer from the valence band into empty states in of the electrolyte, a highly conductive surface layer is generated. Holes propagate in the layer with mobilities up to 350 cm2/Vs. The sheet hole density in this layer is in the range 1011 to 5 × 1012 cm−2, and dependents on pH of the electrolyte or adsorbate. This has been utilized to manufacture ion sensitive field effect transistors (ISFET) from diamond. The drain source conductivity of single crystalline CVD diamond is pH dependent, with about 66 mV/pH, which is in reasonable agreement with the Nernst law. Due to strong coulomb repulsion between positive ions in the electrolyte and the H+‐surface termination of diamond, an enlarged tunneling gap is established which prevents electronic interactions between the electrolyte and diamond. This is a “virtual gate insulator” of diamond ISFETs. Application of potentials larger than the oxidation threshold of +0.7 V (pH 13) to +1.6 V (pH 1) gives rise to strong leakage currents and to partial surface oxidation. In addition, the electronic interaction of diamond with redox couples is characterized using cyclic voltammetry experiments. The results are well described by the transfer doping model which accounts for the specific properties of undoped diamond immersed in electrolyte solutions are covered simply by adsorbates. In addition, numerical solutions of the Schrödinger and Poisson equations are used to show that the density of state distribution of unoccupied valence band states in case of a perfect interface would be governed by two‐dimensional properties (2D). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Single defect centres in diamond: A review
Authors: Jelezko F. , Wrachtrup J. 
Published: October 2006

AbstractThe nitrogen vacancy and some nickel related defects in diamond can be observed as single quantum systems in diamond by their fluorescence. The fabrication of single colour centres occurs via generation of vacancies or via controlled nitrogen implantation in the case of the nitrogen vacancy (NV) centre. The NV centre shows an electron paramagnetic ground and optically excited state. As a result electron and nuclear magnetic resonance can be carried out on single defects. Due to the localized nature of the electron spin wavefunction hyperfine coupling to nuclei more than one lattice constant away from the defect as dominated by dipolar interaction. As a consequence the coupling to close nuclei leads to a splitting in the spectrum which allows for optically detected electron nuclear double resonance. The contribution discusses the physics of the NV and other defect centre from the perspective of single defect centre spectroscopy. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Experimental indications of a BCS behaviour in superconducting diamond
Authors: Sacépé B. , Chapelier C. , Marcenat C. , Kačmarčik J. , Klein T. , Omnès F. , Bustarret E. 
Published: October 2006

AbstractWe present a scanning tunneling spectroscopy study of a superconducting single‐crystalline heavily boron‐doped diamond which provides an experimental evidence for BCS behaviour. The superconducting gap, its temperature dependence, its relationship to the bulk critical temperature as well as the shape of the tunneling density of states are found to be fully compatible with a conventional BCS‐type weak‐coupling mechanism. A Raman backscattering spectroscopy study of diamond epilayers with different doping levels indicates by a slight phonon softening a coupling between carriers and optical phonons. In addition, in the mixed state, the disordered Abrikosov lattice of vortices were imaged using STM spectroscopy. Localized states at energies strikingly much higher than expected for low‐lying quasiparticles excitations appear in the tunneling density of states of the vortex core. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Growth and properties of nanocrystalline diamond films
Authors: Williams Oliver A. , Nesládek Miloš 
Published: October 2006

AbstractThe aim of this paper is to summarise recent progress in the growth of small grain‐sized Chemical Vapor Deposition (CVD) diamond often called nanocrystalline diamond, i.e., diamond with grains typically smaller than 500 nm. Nanocrystalline (NCD) and Ultrananocrystalline diamond (UNCD) films are new materials offering interesting applications to nanobioelectronics and electrochemistry. However NCD and UNCD thin films comprise of entirely different structures which is highlighted here in this paper. We discuss in detail the main differences in Raman spectra, optical properties and electrical transport properties. Finally we present a simple model of the conductivity mechanism in nitrogenated UNCD (N‐UNCD) and boron doped NCD (B‐NCD) films, and show the possibility of achieving the superconductive transition in B‐NCD films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Functionalization of single‐walled carbon nanotubes by aromatic molecules studied by scanning tunneling microscopy
Authors: Lauffer Peter , Jung Adrian , Graupner Ralf , Hirsch Andreas , Ley Lothar 
Published: October 2006

AbstractA functionalization of single‐walled carbon nanotubes (SWCNTs) without the necessity to introduce defects to the atomic structure of the graphitic lattice can be achieved via π‐stacking interaction of the SWCNTs sidewalls with aromatic molecules. In our work we study the functionalization of SWCNTs with two different aromatic molecules by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Functionalization was performed in solution and the SWCNTs so obtained were transfered to a sputter‐annealed Au(111) substrate using dry transfer techniques in vacuum to avoid surface contamination. Differential conductance imaging of the atomically resolved functionalized SWCNT reveals a substructure which can be attributed to the molecular orbitals of aminoanthracene. These findings are compared to the STM images obtained from the bare molecule prepared by thermal evaporation on a clean Au(111) surface which are interpreted with the help of quantum chemical calculations of the molecular orbital structure. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Silicon nanowires: catalytic growth and electrical characterization
Authors: Weber Walter M. , Duesberg Georg S. , Graham Andrew P. , Liebau Maik , Unger Eugen , Cheze Caroline , Geelhaar Lutz , Lugli Paolo , Riechert Henning , Kreupl Franz 
Published: October 2006

AbstractNominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline‐Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 13 to 30 nm thin nominally undoped Si‐NWs as the active region. Various silicides were investigated as Schottky‐barrier source and drain contacts for the active region. For CoSi, NiSi and PdSi contacts, the FETs transfer characteristics showed p‐type behavior. A FET consisting of a single Si‐NW with 20 nanometers diameter and 2.5 µm gate‐length delivers as much as 0.15 µA on‐current at 1 volt bias voltage and has an on/off current ratio of 107. This is in contrast to recent reports of low conductance in undoped Si. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electron–phonon coupling in carbon nanotubes
Authors: Machón M. , Reich S. , Thomsen C. 
Published: October 2006

AbstractKnowledge of electron–phonon coupling is essential for the understanding of many properties of carbon nanotubes. We present a comparative study of the coupling of electrons to totally symmetric phonons: the radial‐breathing mode and the high‐energy mode. The coupling of the high‐energy mode is stronger than of the radial‐breathing mode by a factor of ≈6. In both cases the matrix elements depend on chirality, diameter, family, and transition energy. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Fabrication of field‐effect transistor devices with fullerene related materials
Authors: Nagano T. , Kusai H. , Ochi K. , Ohta T. , Imai K. , Kubozono Y. , Fujiwara A. 
Published: October 2006

AbstractField‐effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n ‐channel normally‐off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field‐effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10–4 and 1.4 × 10–3 cm2 V–1 s–1, respectively, at 300 K. On the other hand, the n ‐channel normally‐on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Photoluminescence from excitons at the mini‐Brillouin‐zone boundary in a GaAs/AlAs superlattice
Authors: Hasegawa T. , Nakayama M. 
Published: October 2006

AbstractWe have investigated the photoluminescence (PL) properties related to the mini‐Brillouin‐zone boundary (π point) in a (GaAs)24/(AlAs)2 superlattice. In order to detect the PL from the π‐point exciton that has a very fast relaxation process in momentum space, we measured time‐resolved PL (TRPL) spectra with a streak‐camera system. Photoreflectance spectroscopy was adopted to characterize the optical transition energies at the mini‐Brillouin‐zone center (Γ point) and the π point, which results in the clear observation of the heavy‐hole‐exciton transition in the first quantization (n = 1) miniband at the π point, H11(π), in addition to the Γ‐point exciton, H11(Γ) usually observable. We have found that PL band relevant to the H11(π) transition appears in the TRPL spectra by tuning the excitation energy to the H11(Γ) transition. Furthermore, the H11(π)‐PL band has a delay time relative to the H11(Γ)‐PL band, which reflects the pileup of excitons and carriers from the Γ point to the π point in the miniband dispersion. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Structural Relaxation in Charged Metal Surfaces and Cluster Ions
Authors: Weigend Florian , Evers Ferdinand , Weissmüller Jörg 
Published: October 2006

AbstractSpace‐charge layers can noticeably affect the properties of metal electrode surfaces, for instance by modifying the surface dielectric response or indirectly via the induced atomic relaxations. While there are efforts to exploit this concept for designing novel functional nanomaterials, the underlying microscopic processes are poorly understood. Here, we report on a density functional theory (DFT) study of atomic relaxation in Au cluster ions comprising up to 309 atoms. Suitable averages over atomic displacements respond to charging consistent with experimental observation on macroscopic Au single‐crystal surfaces. Moreover, the overall DFT response is also consistent with predictions of a simple phenomenological model. Motivated by our observations, we propose a scenario in which the surface relaxation (“stretch”) results from out‐of‐plane Hellman–Feynman forces exerted on the surface atoms by the excess charge, and where the in‐plane surface stress represents essentially an elastic transverse contraction tendency of the surface layer in response to stretch.
In Situ Electron Microscopy Electromechanical Characterization of a Bistable NEMS Device
Authors: Ke Changhong , Espinosa Horacio D. 
Published: October 2006

AbstractA previously proposed two‐terminal carbon‐nanotube‐based device with closed‐loop feedback is demonstrated through in situ scanning electron microscopy (SEM) experiments. The pull‐in/pull‐out tests were carried out using a multi‐walled carbon nanotube (MWCNT) welded to a conductive probe attached to a nanomanipulator. The MWCNTs were cantilevered over a gold electrode and electrostatically actuated. The measured current–voltage curves exhibited the theoretically predicted hysteretic loop between the pull‐in and pull‐out processes. Both experiments and theoretical modeling demonstrated the bistability of the device confirming its utility in applications such as memory elements, NEMS switches, and logic devices. Failure mechanisms observed during the pull‐in/pull‐out event are also reported and discussed.
Improvement of Aspergillus niger Glucoamylase Thermostability by Directed Evolution
Authors: Wang Yue , Fuchs Erica , da Silva Roberto , McDaniel Allison , Seibel Janice , Ford Clark 
Published: October 2006

AbstractDirected evolution was used to improve the thermostability of Aspergillus niger glucoamylase (GA) expressed in Saccharomyces cerevisiae. A starch‐plate assay developed to screen GA mutants for thermostability gave results consistent with those of irreversible thermoinactivation kinetic analysis. Several thermostable multiply‐mutated GAs were isolated and characterized by DNA sequencing and kinetic analysis. Three new GA mutations, T62A, T290A and H391Y, have been identified that encode GAs that are more thermostable than wild‐type GA, and that improve thermostability cumulatively. These individual mutations were combined with the previously constructed thermostable site‐directed mutations D20C/A27C (forming a disulfide bond), S30P, and G137A to create a multiply‐mutated GA designated THS8. THS8 GA is substantially more thermostable than wild‐type GA at 80°C, with a 5.1 kJ/mol increase in the free energy of thermoinactivation, making it the most thermostable Aspergillus niger GA mutant characterized to date. THS8 GA and the singly‐mutated GAs have specific activities and catalytic efficiencies (kcat/Km) similar to those of wild‐type GA.
Microwave‐accelerated Synthesis and Characterization of Potato Starch‐g‐poly(acrylamide)
Authors: Singh Vandana , Tiwari Ashutosh , Pandey Sadanand , Singh Somit Kumar 
Published: October 2006

AbstractUsing a very low concentration of potassium persulfate as initiator, acrylamide could be efficiently grafted onto potato starch under microwave irradiation and for the grafting O2 removal from the reaction vessel was not required. Under optimal conditions, grafting and efficiency observed were 160% and 89%, respectively. Grafted starch was characterized by using Fourier transform infrared spectroscopy (FTIR), X‐ray diffraction (XRD) and thermogravimetric analysis (TGA). It was observed that the microwave irradiation could significantly accelerate the synthesis of starch‐graft‐poly(acrylamide), because under identical conditions no grafting was observed in a conventional procedure. Viscosity, shear stability and water/saline solution retention of the microwave‐synthesized grafted starch were studied and compared with that of the parent starch.