bluuebunny/crossref_metadata_2025_split huggingface dataset:
The defects in Se‐doped InSb single crystals
Authors: Prihodjko E. N. , Olhovikova T. J. , Hashimov F. R. , Dashevski M. Ja. , Molodtsova E. V. 
Published: July 2007

AbstractUsing optical microscopy and TEM methods as well as X‐ray topography method structural perfection of Czochralski grown Se‐doped InSb single crystals has been investigated. Se concentration was determined by mass‐spectrometry method and was in the range of 1.1017 to 9.1019 cm−3. – It has been shown that Se presence up to the highest concentration does not influence crystal dislocation structure, but gives rise to the large number of precipitates showing moiré contrast. The size of the precipitates is in the range of 0.5 μm to 3.8 μm. From the calculation of the contrast it has been grown that lattice parameter of the precipitates differs from that of matrix by 0.02 ÷ 0.05 Å. – Besides, in crystals with high Se concentration (9.1019 cm−3) small particles with symmetrical field of deformation appear.
Quantitative X‐ray diffraction analysis of textured sheet metals
Authors: Kämpfe B. , Patzelt P. , Nestler C.‐G. 
Published: July 2007

AbstractA disadvantage of the quantitative X‐ray diffraction analysis of samples from sheet metals is the incorrectness of the measuring results owing to the presence of textures in the material. In considering several reflexes of every phase the influence of textures may be reduced. Such a method will be presented and tested. The yielded results show that the new method can be useful for textured sheet metal samples.
Oriented action of some solid substrates to liquid crystal layer
Authors: Derzhanski A. , Komitov L. , Mihailov M. 
Published: July 2007

AbstractThe orienting action of three types of layers on liquid crystal is investigated. Homogeneous orientation of the liquid crystal layer is obtained under the action of a transparent conductive SnO2 film and carbon film. Such an orientation is achieved with gelatin films as well. Homeotropic orientation of the liquid crystal can be also obtained by exposing the latter to ion bombardment with Ar ions.
Recent developments in the understanding of the structure and properties of grain boundaries in metals
Authors: Gleiter H. 
Published: July 2007

AbstractThe basic physical problems of the geometric models and structural models of grain boundaries based on computer simulations are considered. By comparing the approximations made in these models with the general solution of the problem based on the theory of metallic cohesion, we are led to conclude that

geometric grain boundary models (coincidence models) may be used to derive certain geometric features of a boundary (e.g. the boundary periodicity). However, due to the fact that interatomic forces are neglected, it seems not possible to deduce the actual atomic structure and properties of grain boundaries on the basis of these models.
Dislocation models of grain boundaries seem to be of physical significance only for low energy boundaries. In all other boundaries, misfit dislocation are theoretically and experimentally found to be delocalized in the sense that their core is smeared out in the plane of the boundary.
Structural boundary models deduced by computing the minimum energy atomic configuration using pairwise interatomic potential functions seem to represent a reasonable approximation of the actual atomic structure.
The experimental and theoretical evidence presented indicates that grain boundary properties can, in general, not be derived from computer models, as these properties depend partially on electronic effects.
Further developments of the physical understanding of grain boundaries seems to require the incorporation of electronic effects in the theory of interfaces.
Die Diffusion von Wasserstoff in Nickel‐Ein‐ und ‐Polykristallen bei 60°C
Authors: Gardavská G. , Lejček P. 
Published: July 2007

AbstractDie Wasserstoffdiffusion in Ein‐ und Polykristallen von Nickel wurde mit dem Ziel untersucht, den Einfluß der Korngrenzen zu ermitteln. Es wird gefunden, daß die geringen Unterschiede in den Diffusionskoeffizienten sich nicht eindeutig auf die Unterschiede zwischen den polykristallinen Materialien und den Einkristallen zurückführen lassen. Die Korngrenzen beeinflussen den Mechanismus der Diffusion nicht wesentlich.
On the theory of normal growth of crystals in binary systems
Authors: Zelenev Yu. V. , Baikov Yu. A. , Molotkov A. P. 
Published: July 2007

AbstractCrystallization processes of binary systems are considered, in which solid particles consisting of components A and B grow from the melt in monolayers of a two‐phase boundary zone by a mechanism of spontaneous thermal equilibrium type concentration fluctuations. The calculation is based on probability distribution functions. The region of small supercoolings of the binary system melt‐crystal proves most valid for this investigation. The change of the mean crystallization rate of the two‐phase boundary zone with the supercooling of the melt shows a linear behaviour. The dependence of the kinetic coefficient on the degree of the atomic roughness of the phase boundary with different numbers of monolayers in the phase boundary, the total number of particles in each monolayer, and a certain roughness are connected with the energy of positional disorder in binary systems.
Kristallstrukturänderungen des Magnesiumnitrats‐Hexahydrats, die infolge isodimorpher Substitution durch Co(II)‐ und Ni(II)‐Ionen entstehen
Authors: Balarew Chr. , Barkov D. 
Published: July 2007

AbstractMit Hilfe der Methode der physikalisch‐chemischen Analyse werden die Systeme Mg(NO3)2Co(NO3)2H2O und Mg(NO3)2Ni(NO3)2H2O bei 25,0°C untersucht. Es wird festgestellt, daß als Folge isodimorpher Substitution der Mg2+‐Ionen von den Mg(NO3)2 · 6 H2O‐Kristallen durch Co2+ oder Ni2+‐Ionen oberhalb einer bestimmten Substitutionsgrenze Strukturänderungen entstehen.
Solid‐phase growth of CuGaS2 crystals
Authors: Paorici C. , Zanotti L. 
Published: July 2007

AbstractHomogenized mixtures of copper, gallium, and sulphur were annealed for 200 hrs. under vacuum at about 1000–1050°C (i.e. below the melting point of the CuGaS2 phase) in quartz ampoules in a vertical position, and then cooled down in a temperature gradient. The final charge was made up of three well‐defined portions: a yellow polycrystalline CuGaS2 with large blocks of CuGaS2 (close to stoichiometry), a black portion with darkgreen aggregates of small CuGaS2 crystals, and yellow laminae of CuGaS2 single crystals, slightly inclined away from [112] direction. — A coupled growth mechanism — solidstate‐diffusion‐assisted coalescence/vapour transport — is assumed.
Einfluß des Ionenbeschusses auf die Oberflächenstruktur von Kristallen aus Natriumchlorid
Authors: Marinov M. 
Published: July 2007

AbstractMittels elektronenmikroskopischer Untersuchungen werden die an der Oberfläche von Natriumchloridkristallen bei Ionenbeschuß auftretenden Strukturveränderungen verfolgt. An der Kristalloberfläche entstehen nach dem Beschuß Gebilde von Rundsymmetrie, deren Abmessungen mit der Zeit und der Stärke des Ionenbeschusses wachsen. Dabei werden die Grenzstrukturen der gebildeten Zonen von einer bestimmten Größe ab wie bei Wachstumsfiguren gröber.Für die Untersuchung der feinen Mikrostruktur der Kristalloberfläche vor und nach dem Ionenbeschuß wird die Golddekorationsmethode unter gleichzeitigem Ionenbeschuß angewendet. Es wurde festgestellt, daß die Dichte und Größe der kleinen Goldkristalle in den aktiven Stellen sich von denen des übrigen Oberflächenteils unterscheiden.Die Beurteilung des Bildungsmechanismus der runden Zonen erfolgt im Sinne der Darlegungen von Kaminski und Wehner über den Charakter des Zusammenstoßes zwischen den Ionen und Bauelementen des Kristallgitters.
Preferred Growth Direction of Ni Single Crystals by the Floating‐Zone Method
Authors: Hayashi S. , Komatsu H. 
Published: July 2007

AbstractIn Ni single crystals grown by the floating‐zone method, it was found that their growth directions tended to concentrate towards the 〈111〉 or the 〈100〉 direction. An interpretation was put forward for the preferred direction of these crystals in terms of thermal stability of the crystallographic planes in the solid‐liquid interface.
Structural Etching of {001} and {110} Faces of Various AIIIBV Compounds
Authors: Gottschalch V. 
Published: July 2007

AbstractThe present paper discusses the use of selective photoetching with H3PO4:H2O2 for characterizing various AIIIBV compounds and detecting misfit dislocations in transition layers. For GaP, the results obtained are compared with those realized with the use of an AB etchant for which suitable conditions for the structural etching of {001} material and the characterization of cleavage faces are given. The direction of the dislocation line is inferred from the shape and orientation of etch pits. The etch figures of different types of misfit dislocations are discussed.
The Molecular and Crystal Structure of 1 Ref, 3trans‐bis(4‐chloro‐phenyl)‐2trans‐nitro‐5‐oxoperhydropyrazolo[1,2‐a] pyrazol, a “non‐cisoid” 1,3‐Dipol Adduct
Authors: Kutschabsky L. , Dorn H. 
Published: July 2007

AbstractThe three‐dimensional structure of the title compound has been established by means of an X‐ray analysis. The product was formed by a thermal 1,3‐dipolar cycloaddition. According to the concerted [π4s + π2s]‐mechanism the formation of this stereoisomer should actually be forbidden. The structure determined by X‐ray analysis confirms the chemical results.
Electron Beam‐Specimen‐Environment Interactions in the HVEM
Authors: Butler E. P. , Goringe M. J. 
Published: July 2007

AbstractPossible interactions between the electron beam, specimen and environment surrounding the specimen are categorised and discussed. A number of examples which illustrate the possible of such interactions on the results of an in‐situ experiment are given, and the importance of accurate knowledge of the environment is stressed.
Relation between the Activation Parameters of the Plastic Deformation in MgO Crystals Determined by Macroscopic and by In‐situ HVEM Experiments
Authors: Bartsch M. , Messerschmidt U. , Appel F. 
Published: July 2007

AbstractThe results of macroscopic strain rate and temperature cycling tests on MgO single crystals are compared with the results of in‐situ deformation tests in a HVEM on the basis of the basis of the thermally activated dislocation glide model. The activation volume estimated by strain rate cycling tests is compatible with the mean obstacle distance of the screw dislocations. However, the local stress estimated by in‐situ deformation tests was found to be larger than the macroscopic yield stress.
HVEM Study of the Development of the Recrystallization Texture in Deformed Copper Single Crystals
Authors: Wilbrandt P.‐J. , Haasen P. 
Published: July 2007

Abstract〈110〉‐orientated single crystals of high purity copper were deformed in tension up to 80% elongation. Sections of the deformed material were examined by HVEM before and after annealing in situ. Additional measurements by a texture goniometer confirmed and supplemented the metallographic results. The orientations of all recrystallized micrograins can be interpretated as the result of multiple annealing twinning. Since the grain boundary energy may be lowered by twinning the new orientations may be selected for this reason. These results can explain the recrystallization textures observed by X‐ray techniques.
OH− absorption in LiNbO3 crystals doped with iron
Authors: Agamalyan N. R. , Balasanyan R. N. , Harutunyan V. E. , Vartanyan E. S. 
Published: July 2007

AbstractOn the basis of spectral and ESR investigations of crystals annealed in hydrogen, a mechanism of the formation of OH− absorption in crystals of lithium niobate doped with iron ions is suggested.
Quantum‐theoretical calculation of activation parameters for mass transfer and mass transport processes on ionic crystals (V)
Authors: Winzer A. 
Published: July 2007

AbstractA report is given on the calculation of activation parameters for mass transfer and mass transport processes for ionic crystals on a quantum‐theoretical basis. Einstein's model for calculating the internal energy of ionic crystals and the specific heat was extended and applied to the problems of mass transfer and transport, the frequency of the optical phonons and the characteristic oscillation frequencies of the crystals (Einstein frequency, Debye‐frequency) being employed for the calculation. The experimentally determined activation energies of the mass transfer and transport processes were compared with the values calculated on a quantum theoretical basis which resulted in good agreement.
Secondary nucleation and growth of magnesium sulphate heptahydrate in a fluidized bed
Authors: Karpiński P. H. 
Published: July 2007

AbstractFrom both the theoretical and practical point of view, studies of secondary nucleation and crystal growth kinetics are of great importance, especially from point of view of varying hydrodynamic conditions. However, such a complex problem has not yet been solved. The present paper shows one of possible ways of approaching this problem using a fluidized bed crystallizer.
On the chemical transport of molybdenum dioxide with tellur tetrahalogens (II). The chemical transport of MoO2 with TeCl4 and TeJ4
Authors: Ritschel M. , Oppermann H. 
Published: July 2007

AbstractA report is given on the transport behaviour of MoO2 with TeCl4 and TeJ4. Experimental and calculated transport rates are compared for the MoO2/TeCl4‐system. The influence of the various deposition conditions is described on the crystal habit of the MoO2‐monocrystals.
Microhardness investigations on potassium dihydrogen phosphate crystals
Authors: Joshi M. S. , Antony A. V. , Rao P. Mohan 
Published: July 2007

AbstractVickers microhardness measurements are carried out on single crystals of potassium dihydrogen phosphate. Dependence of hardness on indentation load and anisotropy in hardness of (100) and (011) planes are described. Crack patterns around indentation are found to be dependent on indenter orientation. Also explained are the fracture at high indentation load and etch patterns obtained on indented surfaces.
X‐ray investigation of NPOOB crystals
Authors: Przedmojski J. , Pura B. 
Published: July 2007

AbstractResults of a series of experimental investigations by means of X‐rays of NPOOB crystals are reported. These results refer to the anisotropy of thermal expansion, to the smectic‐nematic phase transition and to critical scattering accompanying that phase transition. It is suggested that the smectic‐nematic phase transition is continuous.
Mechanoluminescence of halogenate crystals
Authors: Chandra B. P. , Verma R. D. 
Published: July 2007

AbstractMechanoluminescence (ML) has been studied in twenty halogenate crystals. All piezoelectric crystals show ML similar to the emission from second positive group of molecular nitrogen, and all the crystals not exhibiting ML are non‐piezoelectric. Some of the non‐piezoelectric crystals also exhibit nitrogen emission ML which is comparable in intensity to that of piezoelectric crystals. The ML appears only during the different steps developing in the fracture region of the force versus compression curve of the crystals. No considerable change in the ML activity is found due to the number of crystallization or due to the addition of different impurities from 100 to 10.00 ppm. The ML activity per mole of the halogenate crystals varies around four orders of magnitude. It is concluded that in addition to the piezoelectrification of the newly created surfaces there exists some other process of electrification which may cause the ML exitation in halogenate crystals.
Microhardness and structure of reactive ion‐plated chromium/carbon films
Authors: Bewilogua K. , Bugiel E. , Rau B. , Schürer C. , Weissmantel C. 
Published: July 2007

AbstractReactive ion‐plated chromium/carbon films exhibit a strong adherence and values of microhardness, which are clearly higher than those of pure chromium. Structure investigations by high resolution electron diffraction revealed microcrystallites of bcc Cr with mean diameters of some nm. In addition to chromium with a slightly dilated lattice, the films contain chromium oxide and chromium carbide. This interpretation is supported by the results of phase analysis with annealed Cr/C films.
Investigation of crystal lattice defects of PbZrO3 single crystals by transmission electron microscopy
Authors: Dobrikov A. A. , Presnyakova O. V. 
Published: July 2007

AbstractThe investigation of PbZrO3 single crystal structure was carried out by the method of transmission electron microscopy (TEM). It is shown that extended planar defects, slip lines, twins, and morié patterns are observed in PbZrO3.
Orientation dependence of the NMR signal of deformed NaCl single crystals
Authors: Schlothauer K. , Berg G. , Fröhlich F. 
Published: July 2007

AbstractThe 23Na signal of different deformed NaCl crystals was measured as function of the angle of rotation of the crystal with respect to the static magnetic field. The second moment of the NMR line is changed periodically determined by the slip mechanism. It is shown that the measured second moment can be obtained by a superposition of the parts originating from two‐fold and four fold slip, respectively. The portion of the two slip mechanisms can be calculated quantitatively by fitting the experimental points.
Dislocation luminescence of germanium
Authors: Steinmann E. A. 
Published: July 2007

AbstractThe dependence of dislocation luminescence of p‐ and n‐Ge is investigated using different doping concentrations and ranges of pumping power. Three luminescence bands can be chosen. The main band (0.5 eV) is supposed to be due to the transition of the conduction band electron to the dangling bond, and is effective at any experimental conditions. Two other bands are rather sensitive to the dopant type. This enables us to suggest the model of the corresponding transitions in donor‐acceptor recombination terms.
Investigation of plasma interaction with carbon impurities on SiO2‐ and Al2O3 surfaces by EPR‐, Mass‐ and emission spectroscopy
Authors: Tiller H.‐J. , Breitbarth F.‐W. , Langguth B. , Göbel R. , Berg D. , Rudakoff G. 
Published: July 2007

AbstractCarbon impurities on highly disperse SiO2 and Al2O3 are detected by their interaction with low pressure plasmas, with aid of mass‐, emission‐ and epr‐spectroscopic methods. The formation of surface defects on SiO2 by plasma treatment is strongly influenced by these impurities. Some of these defects are caused by the impurities also. These effects depend on the time of plasma interaction and on plasma gas, where Ar, O2, H2 and CO plasmas are investigated. By H2 plasma and the reaction products of the other mentioned above plasmas a partial hydrogenation of the carbon impurities is detected.
LiNbO3 layer growth in a LiVO3 high temperature solution
Authors: Hemmerling J. , Fischer K. , Sinn E. 
Published: July 2007

AbstractHomoepitaxy of LiNbO3 takes a successful course in high temperature solutions (HTS) with LiVO3 as a solvent. In order to optimize the deposition process the phase correlations in the pseudobinary system LiNbO3‐LiVO3 were specified by means of DTA. At the liquidus temperatures the HTS with concentrations of 15 to 40 mole % have an approximately constant shear viscosity of η ≈ 13.5 mPa · s, similary to solvents containing lead compounds. Always smooth LPE‐layers grow on singular {1102}‐substrates. Surfaces of all other orientations were found to be rough because rhomboedric faces of LiNbO3 form in the stable state. On the negative polarized (0001)‐face epitaxy is still possible, however, on the opposite (0001)‐face only a hexagonal cellular structure is observed because the singular faces develop, exclusively.
Structure and electrical resistance of thin scandium films (III). Study on electrical properties
Authors: Loboda V. B. , Protsenko I. E. 
Published: July 2007

AbstractThe specific resistance‐thickness of ScHx (vacuum 10−5 to 5 · 10−6 Torr) and Sc films (vacuum 1 · 10−8 to 3 · 10−8 Torr) relationships have been obtained by keeping a record of a film resistance directly in the course of condensation. The results are discussed according to the theory FUCHS‐SONDHEIMER (ScHx, Sc) and MAYADAS‐SHATZKES (Sc) assuming a diffuse scattering of the carriers (P = 0) on the external surface of the films. A mean free path of the current carriers is 188 to 355 Å (T ⋍ 300 K) for ScHx and 400 Å with grain‐boundary scattering parameter from 0.1 to 0.3 for Sc. The temperature dependence of specific resistivity of Sc films was obtained in the interval from 300 to 650 K during the annealing in vacuum 5 · 10−9 Torr.
Determination of refractive indexes of dielectric films by the use of immersion liquids
Authors: Ayupov B. M. , Sysoeva N. P. 
Published: July 2007

AbstractExamples of using immersion liquids in ellilipsometry and multiple‐beam interferometry are given. The refractive index of very thin (∼ 5.0 nm) silica films on silicon and on films of silicon nitride are determined by the ellipsometry method. The method of precise determination of refractive index of monolayer dielectric films is described when a precision equal to ± 3 · 10−4 was reached. A method of determination film thicknesses near the substrate surface in a twolayer system is suggested. The construction of different prisms is given by means of which the immersion liquids are inserted. The selection of the equations for the determination of refractive index in the multiple‐beam interferometry is discussed. Two versions of the use of immersion liquids for the determination of refractive indexes of dielectric films by interferometry method are given.
Influence of the real structure on the linear thermal expansion coefficient of A15‐type intermetallic compounds from room temperature to 10K
Authors: Herold A. , Försterling G. , Kleinstück K. 
Published: July 2007

AbstractThe temperature dependence of the thermal expansion coefficient of a number of A15‐compounds was investigated by X‐ray diffraction experiments. The expansion coefficient of the high‐temperature superconductors with the A15‐structure is highly temperature dependent and has negative values below 100K. Deviations from the stoichiometric composition, substitution of foreign atoms and lattice distortions prevent negative values of the expansion coefficient. The results are discussed in connection with other physical properties of these compounds.
On growth and morphological studies of TGS single crystals
Authors: Pandya G. R. , Vyas D. D. 
Published: July 2007

AbstractThe effect of various growth parameters; seed morphology, growth‐temperature and pH of the mother solution on the growth of TGS single crystals is studied. The effect of these variables on the crystal morphology and perfection is reported. It is shown that; (i) The crystal quality is much dependent on the seed and the growth temperature and (ii) the pH‐control is a simple and an effective method for obtaining TGS crystals of required morphology.
The teachers/practitioners corner forecasting in business schools: A survey
Authors: Hanke John 
Published: July 2007

AbstractThe study of forecasting techniques has received increased attention in recent years. How to incorporate this topic into the business school curriculum is a frequent subject of discussion. The purpose of this study was to determine whether forecasting is being taught in business schools and how it is incorporated into the curriculum. The survey instrument was sent to 622 member institutions of the American Assembly of Collegiate schools of Business. The importance of teaching forecasting techniques at both the undergraduate and graduate level was investigated.