bluuebunny/crossref_metadata_2025_split huggingface dataset:
Application of proteomics for the identification of differentially expressed protein markers for Down syndrome in maternal plasma
Authors: Kolialexi Aggeliki , Tsangaris George Th. , Papantoniou Nikos , Anagnostopoulos Athanasios K. , Vougas Kostantinos , Bagiokos Vassilis , Antsaklis Aris , Mavrou Ariadni 
Published: June 2008

AbstractBackgroundDespite the large impact of ultrasonographic and biochemical markers on prenatal screening, the ability to accurately diagnose Down syndrome (DS) is still limited and better diagnostic testing is needed.MethodsPlasma from 8 women carrying a DS foetus and 12 with non‐DS foetuses matched for gestational age, maternal age and ethnicity, in the second trimester of pregnancy, was analysed by two‐dimensional gel electrophoresis (2‐DE) and matrix‐assisted laser desorption/ionization time‐of‐flight mass spectrometry (MALDI‐TOF‐MS) in order to identify biomarkers for DS.ResultsGel comparison revealed nine proteins differentially expressed in maternal plasma in women with DS foetuses. Eight proteins, transthyretin (TTHY), ceruloplasmin (CERU), afamin (AFAM), alpha‐1‐microglobulin (AMBP), apolipoprotein E (APOE), serum amyloid P‐component (SAMP), histidine‐rich glycoprotein (HRG) and alpha‐1‐antitrypsin (A1AT) were up‐regulated and one, clusterin (CLUS), down‐regulated. All nine proteins are known to be involved in foetal growth and development. APOE, SAMP, AFAM and CLUS are associated with the DS phenotype. Western blot and densitometric analysis of APOE and SAMP confirmed the increase of both proteins by 19 and 48% respectively.ConclusionsAll differentially expressed proteins are candidate biomarkers for DS, providing opportunities for the development of non‐invasive prenatal diagnosis. As these are preliminary findings, follow‐up experiments are needed for their evaluation. Copyright © 2008 John Wiley & Sons, Ltd.
Hydrogen bonds assisted by π‐electron delocalization – the influence of external intermolecular interactions on dimer of formic acid
Authors: Grabowski Sławomir J. 
Published: June 2008

AbstractMP2 and DFT calculations with the use of 6‐311++G(d,p) basis set were carried out to study formic acid dimer as well as this species interacting with additional Lewis acids such as HF, Li+and Na+. These Lewis acids were positioned near carbonyl or hydroxyl oxygen atoms and their influence on geometrical and other parameters of formic acid dimer was analysed. Additionally the ‘quantum theory of atoms in molecules’ (QTAIM) was applied as well as the ‘natural bond orbitals’ (NBO) method. Numerous correlations between geometrical, QTAIM and energetic parameters were found. It was found that π‐electron delocalization is not always connected with the enhancement of H‐bond strength. Copyright © 2008 John Wiley & Sons, Ltd.
Low‐voltage‐operating fullerene C60 thin‐film transistors with various surface treatments
Authors: Kitamura Masatoshi , Kuzumoto Yasutaka , Kamura Masakazu , Aomori Shigeru , Na Jong Ho , Arakawa Yasuhiko 
Published: June 2008

AbstractInfluence of surface treatment on fullerene C60 thin‐film transistors (TFTs) has been investigated. Phenyltrimethoxysilane (PTS), Hexamethyldisilazane (HMDS) and octadecyltrimethoxysilane (ODS) were used for the surface treatment. The treated surface was investigated by water‐contact‐angle measurement and the C60 deposited on the surface was observed with scanning electron microscope. As a result, C60 TFT with the ODS‐treated insulator exhibited the highest field‐effect mobility of 1.46 cm2/Vs. In addition, the TFTs operated at a low voltage of 5 V by adopting high‐dielectric‐constant gate insulator. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE
Authors: Nagamatsu Kentaro , Okada Narihito , Kato Naofumi , Sumii Takafumi , Bandoh Akira , Iwaya Motoaki , Kamiyama Satoshi , Amano Hiroshi , Akasaki Isamu 
Published: June 2008

AbstractAlN layers were directly grown on sapphire substrates with slightly different miscut angles from the c‐plane by metalorganic vapor phase epitaxy at 1300 °C. By X‐ray diffraction analysis, the structural quality was found to improve with the increase in substrate off‐angle. When the substrate off‐angle was 0.5°, the X‐ray rocking curve (XRC) full widths at half maximum (FWHMs) of symmetric and asymmetric planes were 170 and 550 arcsec, respectively. At smaller off‐angle, XRC‐FWHMs were wider. When the substrate off‐angle was zero, the XRC‐FWHM was considerably inferior to that on 0.5o‐off‐angle sapphire. The surface morphology was investigated. Atomic steps were observed on the substrates with a small misorientation. In contrast, macro steps appeared on larger‐off‐angle sapphire substrates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Temperature dependences of charged excitons in low‐density InAs quantum dot system
Authors: Ohmori M. , Torii K. , Sakaki H. 
Published: June 2008

AbstractPhotoluminescence (PL) studies have been made on a single self‐organized InAs quantum dot system at temperatures T from 11 to 140 K in a unique sample where the average inter‐dot distance exceeds 10 μm. While PL from neutral excitons is the strongest in the low and high temperature ranges, PL are dominated by those from negatively charged excitons when T is between 40 and 80 K. It is suugested this phenomenon is probably caused by the difference in diffusivities of photogenerated electrons and holes that gets maximum in the intermediate range. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Spectroscopic ellipsometry study of ZnO films grown on silicon substrate
Authors: Lin Keh‐moh , Chou Keng‐yu , Chen Po‐ming 
Published: June 2008

AbstractThis paper studied the microstructure properties of ZnO:Al (AZO) films by using spectroscopic ellipsometry (SE) technique. Two SE modeling strategies were used to obtain the refractive index and thickness of the AZO films. Results show that reasonable fitting results of film refractive indices could be obtained merely by using appropriate oscillator models. Based on these results, we can profoundly comprehend the relation between the microstructure and conductivity of the films. However, the oscillator model might not be achieved properly due to the sensitive nature of SE measurements. The Cauchy model allows us to obtain film thickness approximately. The deviation between the SE and SEM measurements is smaller than 10%. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Probing the interaction between a single quantum dot and a photonic crystal cavity
Authors: Fushman Ilya , Englund Dirk , Faraon Andrei , Vuckovic Jelena 
Published: June 2008

AbstractThis article reviews our recent work on the development of nanophotonic devices for quantum information processing. We have developed a temperature tuning technique, that allows us to independently tune photonic crystal cavities and quantum dots on the same chip. The high quality factor to mode volume ratio of such cavities leads to a strong interaction between the cavity and the quantum dot. The cavity modifies the quantum dot lifetime, which, in turn, modifies the transmission properties of the cavity.We observe that the resonant nonlinearity of the quantum dot is greatly enhanced by the recirculation of light, and leads to a giant optical nonlinearity, where single photons are able to saturate the quantum dot and modify the transmission function of the cavity. Along with these results, we review the experimental developments, which have led to the realization of the experiment. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Fabrication of GaN‐based light emitting diodes using direct heteroepitaxial lateral overgrowth on patterned sapphire substrates with thick SiO2 masks
Authors: Hoshino K. , Murata T. , Araki M. , Tadatomo K. 
Published: June 2008

AbstractWe have successfully obtained high‐quality GaN films directly on thick SiO2 patterned sapphire substrates by utilizing modified facet‐controlled epitaxial lateral overgrowth (FACELO). GaN films were grown by metalorganic vapour phase epitaxy on the stripe patterned substrates with the SiO2 thickness of 1.2 μm. The threading dislocation density reached a value as low as 5 × 107 cm–2. We have also fabricated Light emitting diodes (LEDs). The output power and external quantum efficiency of the LED operated at 20 mA were 20.74 mW and 37.1%, respectively. This is due to not only the reduced dislocation density but also the improved light extraction efficiency because of the light scattering at the patterned GaN/thick‐SiO2‐masks interface. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
High speed germanium detectors on Si
Authors: Kasper E. , Oehme M. 
Published: June 2008

AbstractAll the common group IV semiconductors – diamond, silicon carbide, silicon, germanium‐ are indirect semiconductors which narrows their optoelectronic application width. Silicon itself has a room temperature band gap of 1.12 eV with the first direct transition at 3.4 eV delivering strong absorption in the ultraviolet and the weaker indirect absorption in the visible up to the near infrared λ = 1.1 µm. Ge has a smaller bandgap (0.66 eV) which correlates with a larger band to band absorption limit (1.9 eV) but even more important the direct transition (0.8 eV) comes down to only about 150 meV above the indirect one. The speed of photodetectors is limited by two main factors, the carrier transport within the device and the RC time constant from loading the depletion layer capacitance via the external supply. High speed operation is obtained with absorption in the depletion layer where high electric fields accelerate the carriers to saturation velocity and avoiding slow carrier diffusion. In a pin diode structure this is obtained by sharp doping profiles (orders of magnitude increase/decrease within several Nanometers) and by the misfit dislocation network of the virtual substrate blocking diffusion from below the device. Indeed within a very short time the bandwidth of Ge on Si detectors was shifted in the GHz regime. The operation bias is usually in the reverse direction, but our group demonstrated also high speed (25 GHz) with zero bias when dark currents should be minimized. These photodetectors are sensitive in a broad spectral range (from visible to 1.6 µm). The lower limit is given by the absorption in the cap layer; the upper limit is the direct absorption edge of Ge. Silicon on insulator (SOI) optical waveguide system concept is explained which uses a light signal externally coupled in the silicon circuit. For its simplicity we propose a silicon on insulator (SOI) substrate. Rectangular waveguides like rib or ridge waveguides provide strong optical confinement at low device fabrication requirements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Coherent control of bound entangled electrons in a CdMnTe quantum well
Authors: Jacobs P. W. , Furdyna J. K. , Merlin R. 
Published: June 2008

AbstractUltrafast laser pulses were used to control the spin state of a pair of entangled, donor‐bound electrons in a CdMnTe quantum well. The entanglement, mediated by an optically‐excited exciton, was characterized by pumpprobe spectroscopy. The data exhibits two dominant oscillations, one at the frequency of the spin‐flip of a donor electron and the second one at twice this frequency. Their amplitudes depend linearly on the pump power. The quantum state of the two‐electron spin system can be controlled by appropriate spatial and temporal shaping of the pump pulses. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
A 5.15–5.35 GHz band 10 W power amplifier using SiC MESFETs
Authors: Kim Kyunghwan , Kim Jaekwon , Burm Jinwook 
Published: June 2008

AbstractA 10 watt radio frequency power amplifier using commercially available silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs), Cree CRF‐24010F, was designed. The frequency range covers 5.15 GHz to 5.35 GHz for using IEEE 802.11a Wireless Local Area Network (WLAN) applications. The 2nd and 3rd order harmonics cancellation technique was introduced to obtain high linearity. A cascade topology was employed to increase small signal gain, isolation, and stability throughout the bandwidth. At VDS1 = VDS2 = 48 V and IDS1 + IDS2 = 871 mA, 11 ± 1 dB power gain, 40 dBm (10 W) output power and 32.5% power added efficiency (PAE) over the operating bandwidth have been achieved in the two stage design. Two‐tone simulation at frequency spacing of 10 MHz was also done and output 3rd order intercept point (OIP3) of 49 dBm was obtained. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Geomorphic applications of stream‐gage information
Authors: Juracek Kyle E. , Fitzpatrick Faith A. 
Published: June 2008

AbstractIn the United States, several thousand stream gages provide what typically is the only source of continuous, long‐term streamflow and channel‐geometry information for the locations being monitored. In this paper, the geomorphic content of stream‐gage information, previous and potential applications of stream‐gage information in fluvial geomorphic research and various possible limitations are described. Documented applications include studies of hydraulic geometry, channel bankfull characteristics, sediment transport and channel geomorphic response to various types of disturbance. Potential applications include studies to determine the geomorphic effectiveness of large floods and in‐stream habitat change in response to disturbance. For certain applications, various spatial, temporal and data limitations may render the stream‐gage information of limited use; however, such information often is of considerable value to enable or enhance geomorphic investigations. Published in 2008 by John Wiley & Sons, Ltd.
Socially responsible investing in Scandinavia – a comparative analysis
Authors: Bengtsson Elias 
Published: June 2008

AbstractThis article contributes to the literature on socially responsible investing (SRI) by discussing findings from an empirical comparative study of Scandinavian investors. The study draws attention to how contextual factors shape the principles and practices of SRI investors by using a wide range of both qualitative and quantitative secondary data. It is concluded that institutional factors are important in explaining homogeneity among Scandinavian investors' SRI, but also contribute to significant variation in SRI principles and practices between and within countries. In particular, the findings draw attention to the different opportunities available to individual investors, and the strategies they adopt in their application of SRI. Copyright © 2008 John Wiley & Sons, Ltd and ERP Environment.
Does SEE information make a difference to fund managers?
Authors: Henningsson Johan 
Published: June 2008

AbstractThe purpose of this paper is to explore how fund mangers, as cultured observers, make sense of social, environmental and ethical (SEE) information about companies. The paper uses a qualitative research approach involving in depth interviews with fund managers in Sweden. The analysis is influenced by a combination of system and network theories where social networks are imposed on fund managers when they make sense of corporate information. With reference to a growing SRI market, the rationales of social forces imposed on fund managers do not seem to have changed in order for them to include social aspects. Instead, these aspects are taken care of elsewhere in organizations, leaving fund managers as nodes in social networks, outside. However, if social aspects become an issue for the market positioning of companies, they could probably make more of a difference to the rationales of social forces surrounding fund managers. Copyright © 2008 John Wiley & Sons, Ltd and ERP Environment.
A study of the provision of environmental information in financial analysts' research reports
Authors: Nilsson Henrik , Cunningham Gary M. , Hassel Lars G. 
Published: June 2008

AbstractReporting of environmental information along with financial information has become an important research topic. Research to date has focused on the nature of the information reported by companies. This study extends prior research by examining the inclusion of environmental information by financial analysts in their research reports on companies in the chemical and in the oil and gas industries. Both companies and financial analysts are divided into subsets by geographic region, Europe and North America. Results show that only 35 per cent of financial analysts' reports have environmental information. Those reports that do have such information have more environmental information for North American companies than for European companies and analysts tend to report more information for companies in their regions. The chemical industry receives more attention, especially for downside information. Copyright © 2008 John Wiley & Sons, Ltd and ERP Environment.
Stakeholder relations and financial performance
Authors: Scholtens Bert , Zhou Yangqin 
Published: June 2008

AbstractWe analyze how shareholder performance can be associated with stakeholder relations. As such, we try to find out whether there is an association between financial performance and stakeholder relations with respect to different theoretical notions about the firm. Financial performance is operationalized as the financial return of a firm's shares. For stakeholder relations, we look into community involvement, corporate governance, employee relations, environmental conduct, diversity of the workforce, human rights policies and product attributes. We find that the different components of stakeholder relations appear to be associated in a complex manner with shareholder performance. Therefore, it adds value to look closely into the details of stakeholder relations in connection with financial performance. Copyright © 2008 John Wiley & Sons, Ltd and ERP Environment.
Financial outcomes of environmental risk and opportunity for US companies
Authors: Semenova Natalia , Hassel Lars G. 
Published: June 2008

AbstractThe study extends previous research on the relation between environmental and financial performance in two ways. First, we recognize that inherent environmental risk differs among industries. Increased levels of industry risk cause companies to have lower market values even if they are more profitable than companies in low risk industries. Second, we decompose the multi‐dimensional environmental opportunity construct into dimensions of preparedness and performance. As an extension of previous research on the economic value of environmental performance, we show that the reputational benefits of environmental preparedness mainly increase market value, while environmental performance also can bring operational benefits to financial performance. In high risk or polluting industries, environmental management is costly and reduces the operating performance of companies. Copyright © 2008 John Wiley & Sons, Ltd and ERP Environment.
Circular Stapled Hemorrhoidopexy: Experience of a Single Center with 445 Cases
Authors: Uras Cihan , Baca Bilgi , Boler Deniz Eren 
Published: June 2008

AbstractThis study was designed to review the results of circular stapled hemorrhoidopexy (CSH) in the management of second‐, third‐, and fourth‐degree hemorrhoidal disease. The medical records of 483 patients who had undergone circular stapled hemorrhoidopexy for symptomatic hemorrhoidal disease from June 2001 to September 2006 were evaluated. Data regarding complications, residual symptoms, and recurrence were collected. The study included 445 patients (283 men, 162women) between 22 and 74 years old (median age 39 years). This constituted 92% of all patients. Concomitant lateral internal sphincterotomy, skin tags’ excision, and thrombus removal were done in 106 (24.0%), 83 (18.5%), and 20 (4.5%) patients, respectively. The median operating time was 24 minutes (10–45 minutes). The median hospital stay was 40 hours (11–72 hours). Complications during the first 24 hours were fecal urgency (25%), urinary retention (8%), and rectal bleeding (1%). Pruritus ani (21%), thrombosed external hemorrhoids (4%), staple line stenosis (2%), rectal bleeding (2%), anal fissure (1%), and persistent skin tags (3%) were the symptoms seen during the long‐term follow‐up. The median follow‐up was 23 months (6–70 months). The recurrence rate was 1%. Circular stapled hemorrhoidopexy can be safely performed with low recurrence and complication rates while offering a relatively painless postoperative period for the patient.
Risk Factors for Lymph Node Metastasis in Submucosal Invasive Colorectal Cancer
Authors: Choi Pyong W. , Yu Chang Sik , Jang Se J. , Jung Sang H. , Kim Hee C. , Kim Jin C. 
Published: June 2008

AbstractBackgroundRecent studies have shown a 7–15% lymph node (LN) metastasis rate in submucosal invasive colorectal cancer (SICC). Identifying risk factors for LN metastasis is crucial in selecting therapeutic modalities for SICC. We assessed the possibility of and the risk factors for LN metastasis in SICC.MethodsWe performed a retrospective study on 168 SICC patients who underwent curative resection between June 1989 and December 2004 at Asan Medical Center. The level of submucosal invasion was classified into upper third (sm1), middle third (sm2), and lower third (sm3). The following carcinoma‐related variables were assessed: tumor size, tumor location, depth of submucosal invasion, cell differentiation, lymphovascular invasion, neural invasion, and tumor cell dissociation (TCD).ResultsThe overall LN metastasis rate was 14.3%. Significant predictors of LN metastasis both univariately and multivariately were sm3 (p = 0.039), poorly differentiated cancer (p = 0.028), and TCD (p = 0.045). Lymphovascular invasion was a risk factor for LN metastasis in univariate analysis (p = 0.019); however, in multivariate analysis, lymphovascular invasion could not predict LN metastasis. No statistical difference was observed in the risk of LN metastasis with regard to tumor location, size, and neural invasion.ConclusionThe depth of submucosal invasion, cell differentiation, and tumor cell dissociation were significant pathologic predictors of LN metastasis in SICC. Because SICC is associated with a considerable risk of LN metastasis, local excision may be performed carefully in SICC without adverse features.
Trauma Care in India: Current Scenario
Authors: Joshipura M. K. 
Published: June 2008

AbstractTrauma‐care systems in India are at a nascent stage of development. Industrialized cities, rural towns, and villages coexist with a variety of health care facilities and an almost complete lack of organized trauma care. There is gross disparity between trauma services available in various parts of the country. Rural India has inefficient services for trauma care, due to the varied topography, financial constraints, and lack of appropriate health infrastructure. There is no national lead agency to coordinate various components of a trauma system. No mechanism for accreditation of trauma centers and professionals exists. Education in trauma life‐support skills has only recently become available. A nationwide survey encompassing various facilities has documented significant deficiencies in current trauma systems. Some initiatives on improving prehospital systems have been seen recently. Although injury is a major public‐health problem, the government, medical fraternity, and the society are yet to recognize it as a significant public health challenge.