bluuebunny/crossref_metadata_2025_split huggingface dataset:
Adaptive Flüssigkeitstilger für Vertikalschwingungen von Ingenieurstrukturen – Teil 1 – Laborversuche
Authors: Wendner Roman , Reiterer Michael , Hoffmann Simon , Strauss Alfred , Bergmeister Konrad 
Published: November 2007

AbstractDas Schwingungsverhalten von Ingenieurkonstruktionen aus Stahl, Stahlbeton‐ und Spannbeton führt bei Anregung durch Wind, Verkehr, Personen oder Erdbeben trotz statisch ausreichender Bemessung oftmals zu gebrauchstauglichkeitskritischen Zuständen. Dies ist zum einen durch den Trend zu immer schlankeren Bauwerken begründet, zum anderen auch durch Schwierigkeiten bei der Abschätzung des dynamischen Verhaltens in der Planungsphase. Treten kritische Schwingungszustände nach Fertigstellung der Konstruktion auf, so können diese durch den Einsatz von passend abgestimmten Schwingungstilgern effektiv reduziert werden. Der in diesem Aufsatz vorgestellte Flüssigkeitstilger für Vertikalschwingungen stellt eine wirtschaftlich sinnvolle Alternative zum konventionellen Masse‐Feder‐Dämpfer‐Tilger dar. In der Folge werden die theoretischen Grundlagen näher erläutert sowie die Funktionsfähigkeit anhand zahlreicher Laborversuche demonstriert und neue Wege zur aktiven Steuerung und optimalen Abstimmung vorgestellt. Schlussendlich werden Vor‐ und Nachteile des vorgestellten Flüssigkeitstilgers für Vertikalschwingungen von Ingenieurkonstruktionen im Vergleich mit dem klassischen Masse‐Feder‐Dämpfer‐Tilger diskutiert.
Modulation of neuropeptide Y and Y1 receptor expression in the amygdala by fluctuations in the brain content of neuroactive steroids during ethanol drinking discontinuation in Y1R/LacZ transgenic mice
Authors: Eva Carola , Mele Paolo , Collura Devis , Nai Antonella , Pisu Maria Giuseppina , Serra Mariangela , Biggio Giovanni 
Published: November 2007

AbstractPrevious studies have shown that GABAergic neuroactive steroids increase Y1 receptor (Y1R) gene expression in the amygdala of Y1R/LacZ transgenic mice, harbouring the murine Y1R gene promoter linked to a LacZ reporter gene. As ethanol is known to increase GABAergic neuroactive steroids, we investigated the relationship between fluctuations in the brain content of neuroactive steroids induced by chronic voluntary ethanol consumption or ethanol discontinuation and both the level of neuropeptide Y (NPY) immunoreactivity and Y1R gene expression in the amygdala of Y1R/LacZ transgenic mice. Ethanol discontinuation (48 h) after voluntary consumption of consecutive solutions of 3%, 6%, 10% and 20% (v/v) ethanol over 4 weeks produced an anxiety‐like behaviour as measured by elevated plus maze. Voluntary ethanol intake increased the cerebrocortical concentration of the progesterone metabolite 3α‐hydroxy‐5α‐pregnan‐20‐one (3α,5α‐TH PROG) that returned to control level 48 h after discontinuation of ethanol intake. Ethanol discontinuation significantly decreased NPY immunoreactivity and concomitantly increased Y1R/LacZ transgene expression in the amygdala, whereas chronic ethanol intake failed to affect these parameters. The 5α‐reductase inhibitor finasteride prevented both the increase in the cerebrocortical concentration of 3α,5α‐TH PROG apparent after 4 weeks of ethanol intake and the changes in NPY immunoreactivity and transgene expression induced by ethanol discontinuation. Data suggest that 3α,5α‐TH PROG plays an important role in the changes in NPY–Y1R signalling in the amygdala during ethanol discontinuation.
Influence of climate change on the abundance, distribution and phenology of woodland bird species in temperate regions
Authors: LEECH D. I. , CRICK H. Q. P. 
Published: November 2007

There is now overwhelming evidence that an increase in the concentration of greenhouse gases in the Earth's atmosphere has caused global temperatures to increase by 0.6 °C since 1900 and further increases of between 1.4 and 5.8 °C are predicted over the next century. Changes in climatic conditions have already influenced the demography, phenology and distribution of a wide range of plant and animal taxa. This review focuses on the impacts, both observed and potential, of climate change on birds breeding in temperate woodlands of the Western Palaearctic, a significant proportion of which are currently declining. Changes in ambient temperatures and patterns of precipitation may have direct and indirect effects on the survival rates and productivity of bird species, thus influencing population sizes. For some species or populations, the timing of events such as egg‐laying and return from the wintering grounds is also changing in relation to shifts in the peak of food availability during the breeding season. The degree to which different individuals are able to track these temporal changes will have a significant bearing on population sizes and distributions in the future. Unless active management steps are taken, the relatively low dispersal rates of tree species may lead to a decrease in the total area of some woodland habitat types as losses at the southern edge of the range are likely to occur much more quickly than expansion at the northern edge. In addition, the dispersal rates of many woodland birds are themselves low, which could affect their ability to move to new habitat patches if currently occupied areas become unsuitable. Thus, woodland birds may be particularly susceptible to the impacts of climate change.
Climates Create Cultures
Authors: Van de Vliert Evert 
Published: November 2007

AbstractThe circumstances in which societies adapt their cultural values and practices to cold, temperate, and hot climates include the availability of money to cope with climate. Country‐level studies have shown that feeling good, doing good, altruistic volunteering, intrinsic work motivation, cooperative enculturation, and democratic leadership are least prevalent in poorer countries with more demanding climates, moderately prevalent in poor and rich countries with temperate climates, and most prevalent in richer countries with more demanding climates. The common denominator is that inhabitants of lower‐income countries in more demanding climates emphasize survival values at the expense of self‐expression values, whereas the inhabitants of higher‐income countries in more demanding climates emphasize self‐expression values at the expense of survival values. These findings have practical implications for the cultural consequences of global warming and economic growth, and for the effectiveness of financing for human development.
Hybrid Organic/Inorganic Transistors Utilizing an Indenofluorene Derivative as Emitter
Authors: Serbena José P. , Hümmelgen Ivo A. , Hadizab Tayebeh , Wang Zhi Y. 
Published: November 2007

The molecular semiconductors are widely used on a great diversity of electronic and optoelectronic devices. The	incorporation of molecular semiconductors to semiconductor- metal-semiconductor transistors (SMS) simplified the required production technology and, more importantly, allowed the	construction of devices in vertical architecture with nearly	ideal common-base current gains. In this work we present the results of the construction of SMS transistors utilizing an organic semiconductor, an indenofluorene derivative (DPIF), as emitter. The base and collector are respectively tin (Sn) and p-	doped silicon (Si-p). The devices were electrically characterized at three-terminal measurements and were operated in common-base and common-emitter modes, revealing a permeable-	base characteristic. The base thickness was varied in order to	investigate the influence on the device performance. High current gain (~1) was obtained in common-base mode, and in common-emitter mode a current gain of 120 was achieved for a	base thickness of 23 nm.
CMOS Active-Pixel Structure for Eye-Aberration Detection
Authors: Furtado A. S. , de Lima Monteiro D. W. 
Published: November 2007

For ophthalmic instrumentation, the development of new applicationspecific image sensors can be aided by standard microelectronics technologies. The detector must be capable of sensing very low light levels, without being corrupted by noise effects, yielding a high signal-tonoise	ratio (SNR). This paper presents the results of an alternative	pixel	structure fabricated in standard 1.6μm n-well CMOS technology for future integration in a wavefront sensor for the detection of aberrations in the human eye.
Coupling of a CMOS Optical Sensor to a Micromachined Deformable Mirror with an Adaline Neural Method
Authors: de Lima Monteiro D. W. , Ferriera Antonio I. , Teixeria Frederico B. , Melo Joao G. , Vdovin Gleb 
Published: November 2007

We report on the preliminary results of an Adaline neural	method for the coupling of a custom CMOS wavefront sensor to a micromachined adaptive mirror. The algorithm does not rely on a fixed basis matrix -as opposed to traditional methods-, offers excellent immunity to round-off errors and admits real-time input adaptability to speed up computations.
High Viscosity Sensing Using a Love Wave Acoustic Platform Combined with a PDMS Microfludic Chip
Authors: Raimbault V. , Rebière D. , Dejous C. , Guirardel M. , Conedera V. , Pistré J. 
Published: November 2007

This paper exhibits a microsensor solution to allow Love wave acoustic oscillators working under highly viscous liquid environments. Microfluidic techniques are employed to limit attenuation caused by viscous coupling using a poly(dimethylsiloxane) (PDMS) chip bonded on the Love wave device. Fabrication of PDMS chips is detailed. Several microfluidic chip geometries have been realized. Liquid flows of aqueous glycerol solutions up to 0.939 Pa.s (939cP, 98% glycerol) have been tested. Thanks to insertion losses diminution, we were able to observe the Newtonian to Maxwellian behaviour transition in an oscillator mode. Modelisation using the classical perturbation theory is	discussed.
Design, Fabrication ABD Testing of Inexpensive Diffractive Optical Elements
Authors: Filho Dirceu S. , Cirino Giuseppe , Pizolato José C. , Neto Luiz G. , Verdonck Patrick 
Published: November 2007

In this work diffractive optical elements were designed using the Iterative Fourier Transform Algorithm, developed and refined for using in Diffractive Optical Elements and	lithographic mask design. The Iterative Fourier Transform Algorithm was run with Matlab tools. The designs were implemented using lithographic masks produced on transparencies through a commercial, low cost off-set process. These masks were used to perform optical lithography on glass substrates. Final tuning by plasma etching was necessary to obtain well performing diffractive optical elements.
A Proposed Process to Fabricate Strain Gauge Directly Over the Sensor Substrate by Serigraphic Method
Authors: de Lima Bruno L. , Rodrigues da Silva Ana N. , Morimoto N. 
Published: November 2007

The main goal of this work is to characterize the strain gauges fabricated by serigraphic method aiming at its application in pressure sensors and load cells. The strain gauges are	fabricated by serigraphic method: 316 L stainless steel and aluminum substrates in order to determine fabrication. The strain gauges fabricated over the aluminum substrate showed low sensibility due mainly to the low sheet resistance of the used paste A gauge factor between 2.8 and 14.6 were obtained for strain gauges fabricated over 316 L stainless steel substrates. It was observed a direct dependence of the gauge factor and the	sheet resistance of the paste used to fabricate the strain gauge. A study was carried out in order to determine the	dependence of the sensibility and electrical resistance with the thickness of resistive film using the serigraphic pastes which resulted in the best gauge factor(related to the number of serigraphic steps).It was verified that the electrical resistance increases with the number of sintering cycles.
Young's Modulus of a-SiC:H Determined by the Resonant Frequency of Thermally Driven Cantilevers
Authors: Rehder G. , Carreño M. N. 
Published: November 2007

This paper describes the determination of the Young's modulus of a-SiC:H films deposited by PECVD at low temperatures (300{degree sign}C) using thermally driven cantilevers. Hydrogenated amorphous silicon carbide (a- SiC:H) cantilevers fabricated by bulk micromachining of silicon	substrate are thermally actuated by induced Joule effect to determine their frequency of resonance. The geometric feature of the cantilever along with the material density and Young's modulus are a function of the resonant	frequency. Cantilevers of 500 μm in length showed resonant frequencies	ranging from 6.9 to 7.7 kHz which relates to a Young's modulus from 343 to 477 GPa with an average of 410 GPa that is similar to crystalline SiC	reported in the literature.
UV Bandpass Optical Filter for Microspectometers
Authors: Correia J. H. , Emadi A. R. , Wolffenbuttel R. F. 
Published: November 2007

This paper describes the design and modeling of a UV bandpass optical filter for microspectrometers. The materials used for fabricating the multilayer UV filter are: silicon dioxide (SiO2), titanium dioxide (TiO2) and yttrium oxide (Y2O3). The optical filter shows a bandpass response wavelength in the range 230-280 nm, with a transmittance higher	than 80%. Such a device is extremely suitable for optical detection of biological molecules with optical absorption or/and fluorescence in the UV	spectral range. This UV optical filter can be built using post- processing after integrated-circuit and UV photodiode fabrication in a bipolar or CMOS technology. The dielectric multi-layer stack can be deposited on top of the UV photodiode after the standard technology process has been completed. The number of layers was optimized for 11 with all layers of a	thickness acceptable for reproducible fabrication. The materials used for fabricating the UV filter are silicon compatible. Applications presented	are in DNA solutions (to measure the optical density of these solutions at 260 nm) and in the detection of a gas flame in the presence of ambient	light based on the different emission spectra in the UV.
Modeling of Advanced Semiconductor Devices
Authors: Ungersboeck Enzo , Sverdlov Viktor , Kosina Hans , Selberherr Siegfried 
Published: November 2007

Aggressive downscaling of modern semiconductor devices forces development engineers to question the validity of existing	modeling approaches. Models for carrier transport have to be considered which are applicable on the transition into the quantum regime. An	overview of semiclassical current transport models and their	enhancements used for the simulation of nanoelectronic devices is given. Emphasis is put on arising modeling challenges in the existing and future	technology nodes. Electron mobility analysis of ultra-scaled, strained field-effect transistors is presented in detail.
Fermi Pinning in Metal-Oxide-Semiconductor Structures Results from Low Oxygen Content at the Metal-Oxide Interface
Authors: Fonseca L. R. , Knizhnik A. A. , Gavrikov A. V. , Iskandarova I. M. , Bagatur'yants A. A. , Potapkin B. V. 
Published: November 2007

The selection of a proper metal for replacement of polycrystalline silicon as the metal gate in future generation transistors has been	hampered by pinning of the metal Fermi level at the metal/dielectric	interface. Using monoclinic hafnia and zirconia as the gate dielectric we compare two different metal gate/gate dielectric interface structures where the oxygen affinity of the metal gate is either low or high under normal	processing conditions. We show that for the metal gate with high oxygen affinity (molybdenum) the metal Fermi pinning is weaker than for the metal gate	with low oxygen affinity (platinum). Through first principles	calculations this behavior is explained as the result of an oxygen-rich interface for the former and a reduced interface for the latter. Based on these observations we propose a general model for Fermi pinning at the metal/metal oxide interface as mainly caused by low levels of interfacial oxygen. Such red uced interfaces may result from processing conditions as well as by the metal gate low affinity for oxygen.
Evaluation of Triple-Gate FinFETS with High-k Dielectrics and TiN Gate Materials Under Analog Operation
Authors: Pavanello M. A. , Martino João A. , Simoen Eddy , Rooyackers R. , Collaert N. , Claeys Cor 
Published: November 2007

This work presents the analog performance of nMOS and pMOS triple-gate FinFETs with high-k dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation are explored. No halo	FinFETs can achieve extremely large gain at similar channel length and improved unity gain frequency. The FinFETs with channel length of 110 nm achieved an intrinsic gain of 25 dB. Extremely large Early voltages have been measured on long channel nMOS and pMOS with relatively wide fins compared to the results usually reported in the literature. The large Early voltage obtained suggests the devices are in the onset of volume inversion	phenomena due to the low doping level of the device body.
Analysis of Silicon Thickness Reduction on Analog Parameters of GC GAA SOI Transitors Operating up to 300{degree sign}C
Authors: dos Santos Carolina D. , Pavanello M. A. , Martino João A. 
Published: November 2007

This paper analyzes the impact of silicon film thickness	reduction in some analog parameters of Gate-All-Around (GAA) transistors using the graded-channel (GC) architecture. The study was done at high temperatures (up to 300{degree sign}C) through two- dimensional simulations. As the silicon film is reduced an	improvement on the Early voltage was observed. However, for GC	GAA devices this improvement is more pronounced at room temperature than at high temperatures. The output swing voltage (VOS) was also studied and it decreases while reducing the silicon thickness. Regarding the GC GAA the VOS is larger than conventional GAA in 50 nm thick transistors.
Series Resistance Influence on the Linear Kink Effect in Twin-Gate Partially Depleted SOI nMOSFETS
Authors: Agopian Paula G. , Martino João A. , Simoen Eddy , Claeys Cor 
Published: November 2007

This work elaborates on the influence of the series resistance on the linear kink effect (LKE) in twin-gate partially depleted	(PD) Silicon-on-Insulator (SOI) nMOSFETs. The study is based on two-dimensional numerical simulations and is validated by experimental results. A relationship between the total resistance and the apparent mobility degradation factor is reported, showing that the twin-gate structure and a conventional SOI transistor with an external resistance both present a similar LKE reduction. The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be also shown.
Design and Simulation of a Thyristor Surge Protective Device for Telecommunication Systems
Authors: de Orio R. L. , Swart J. , Marzano W. 
Published: November 2007

This paper describes the design of a thyristor surge protective device (TSPD) for telecommunication equipments based on electrical simulations carried out with ATLAS from SILVACO. The influence of the device doping and geometry on the breakover voltage, switching and holding current and on the on-state voltage drop has been analyzed. It has been shown that the TSPD voltage capability is dependent on the breakdown voltage of the p-n (substrate) junction. Also, it has been observed that pregion doping concentration and emitter geometry have both a great impact on the on-state device operation. A TSPD with breakover	voltage of 297 V, holding current of 38.5 mA and on-state voltage drop of 6.7 V at a current of 1 A has been demonstrated.
Polarization Dependence of Photocurrent in InAs/InGaAs/InP Quantum-Dot Infared Photodetectors
Authors: Souza P. L. , Gebhard T. , Schrey F. F. , Strasser G. , Unterrainer K. , Pires M. P. , Landi S. M. , Villas-Boas J. M. , Studart N. 
Published: November 2007

Through polarization dependence measurements of photocurrent together with theoretical calculations we were able to identify different	intersubband transitions in InAs/InGaAs/InP quantum dot structures for mid infrared	photodetectors. Photocurrent for normal incidence was observed but stronger signals are detected for TM polarization of the incident light, revealing a certain extent of a 2D behavior.
High Magnetic Field as a Tool to Study Resonant Sequential Tunneling in Multi-Quantum Wells
Authors: Vieira G. S. , Guimarães P. S. 
Published: November 2007

We report magneto-tunneling measurements in doped GaAs/AlGaAs multi-quantum wells which show evidence of a significant	magnetic field induced reduction of low energy electron scattering mechanisms. Using such phenomenon we show how a high magnetic field can be used to determine precisely the biases for the best resonant tunneling condition in a multi-quantum well structure. We propose the use of this effect as a tool to validate heterostructure design models and software.
Image Recognition Task Based on Decoupled Single-Electron Hamming Networks
Authors: Guimaraes J. G. , du Pin Calmon A. , da Costa José C. 
Published: November 2007

This paper presents a black and white image recogniton task implemented	using a decoupled single-electron (SET) Hamming neural network. For the first time, more than 18000 single-electron transistors are	used in such a task. This network allows a more practical hardware implementation. Simulation results for various temperatures are presented. A vector clustering task is simulated using SIMON. Robustness against random offset charges, as well as dynamic behavior are evaluated.
Signal Classifier Based on a Single-Electron Stochastic Associative Memory
Authors: do Carmo H. C. , Guimaraes J. G. , da Costa José C. 
Published: November 2007

This paper presents a classifier system based on a stochastic associative memory using single-electron basic circuits. This memory can	stochastically extract, from a set of stored reference patterns, the one that is most similar pattern to a given input pattern. Simulations are carried out to demonstrate the functionality of the system.
Impact of the Nitrogen Concentration of sub-1.3 nm gate Oxides on 65 nm Technology Transistor Parameters
Authors: Rotondaro A. L. , Laaksonen R. T. , Singh S. P. 
Published: November 2007

The nitrogen concentration of ultrathin gate oxides (sub-1.3 nm) was varied in a wide range (from 13 % to 23 %). The threshold voltage and the channel carrier mobility of advanced 65 nm technology CMOSFET transistors fabricated with these oxides were analyzed. It was observed that increasing the	nitrogen concentration in the gate oxide results in a negative	shift of the threshold voltage for both NMOS and PMOS devices	and a degradation of the hole mobility. It was also observed	that p-channel transistors are more sensitive to the nitrogen	concentration of the gate oxide than n-channel transistors.
Study of TiO2 and SiO2/TiO2 as Gate Dielectric Maaterials
Authors: Albertin K. F. , Valle M. A. , Pereyra I. 
Published: November 2007

MOS capacitors with TiO2 and TiO2/SiO2 dielectric layer were fabricated and characterized. TiO2 films where physical characterized by Rutherford Backscattering, Fourier Transform Infrared Spectroscopy and Elipsometry measurements. Capacitance-voltage (1MHz) and current-voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide	thickness (EOT), leakage current density and interface quality. The results show that the obtained TiO2 films present a dielectric	constant of approximately 40, a good interface quality with silicon and a leakage current density, of 70 mA/cm2 for VG = 1V, acceptable for high performance logic circuits and low power circuits fabrication, indicating that this material is a viable substitute for current dielectric layers in order to prevent tunneling currents. The results for SiO2 (6nm) /TiO2(58nm) layer show a reduction of 3 orders of magnitude in leakage current density and an effec tive dielectric constant of 20, also viable to substitute the usual dielectric material in CMOS fabrication.