bluuebunny/crossref_metadata_2025_split huggingface dataset:
Investigation of improved adhesion between Cu film and polyimide by the PSII‐EIAMAD technique
Authors: Lee Yeonhee , Hong Ju Hi , Chun Hyejin , Han Seunghee 
Published: March 2006

AbstractPlasma source ion implantation (PSII) is a relatively simple and effective ion implantation/deposition technique for the surface modification of materials. In PSII, a substrate is immersed in the plasma, and negative, high‐voltage pulses are applied to accelerate ions into the substrate in order to modify the surface properties of materials.PSII technique combined with energetic ion‐assisted mixing and deposition (EIAMAD) was used to improve the adhesion between the Cu film and polyimide. Cu films processed with ion‐assisted mixing showed higher adhesion strength than that of not processed or plasma‐cleaned ones. Cu films on polyimide substrate were deposited by using different ion species to investigate the ion effect on the interface mixing. Argon ion bombardment led to more adhesive and gradient layers as a function of ion energy and ion dose. The adhesion strength was determined by the 90° peel test. The characterization of Cu‐deposited polyimide, generated with ion‐assisted mixing by PSII, was performed by AES, SEM, and AFM. Our results suggested that PSII‐EIAMAD was a very useful method to grow Cu films with good adhesion properties on polyimide at room temperature. Copyright © 2006 John Wiley & Sons, Ltd.
Observation of the hydrogen peak in the spectra of electrons backscattered from polyethylene
Authors: Varga D. , Tőkési K. , Berényi Z. , Tóth J. , Kövér L. 
Published: March 2006

AbstractThe energy distribution of electrons backscattered elastically from polyethylene is studied. The separation between the carbon and hydrogen peak in the energy distribution is shown. Furthermore, the effect of the multiple scattering on the energy shifts and Doppler broadenings is determined using Monte Carlo (MC) simulations. Our MC simulations are in good agreement with our experimental observations. Copyright © 2006 John Wiley & Sons, Ltd.
Nanomechanical property analysis of fast atom beam (FAB) treated ultrahigh molecular weight polyethylene
Authors: Ujvári T. , Tóth A. , Mohai M. , Bertóti I. 
Published: March 2006

AbstractThin, modified surface layers were created on ultrahigh molecular weight polyethylene (UHMWPE) by treating them with low‐energy (∼1 keV) fast atom beams (FAB) of argon, helium, hydrogen and nitrogen. Nanomechanical properties including multipass wear characteristics, dry friction coefficient and topography (roughness) were measured on these modified surfaces. As a result of FAB treatment, the volume loss—calculated from the geometrical characteristics of the Rockwell head and from the depth of the permanent scratch track—could decrease by more than 1 order of magnitude, implying a similar increase in the wear resistance. FAB treatment increased also the dry friction coefficient, while the mean roughness was not altered significantly. Copyright © 2006 John Wiley & Sons, Ltd.
Improving the interpretation of ToF‐SIMS measurements on adsorbed proteins using PCA
Authors: Brüning C. , Hellweg S. , Dambach S. , Lipinsky D. , Arlinghaus H. F. 
Published: March 2006

AbstractAnalyzing different proteins with time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) is a big challenge owing to the absence of unique, identifying peaks between the protein spectra. One possibility for improving the interpretation of the protein spectra is the application of principal component analysis (PCA). The proteins fibronectin and collagen and three fibronectin–collagen mixtures, adsorbed on smooth silicon substrates, were analyzed with ToF‐SIMS. The intensities of molecular protein fragment signals were used to perform a PCA calculation. It was shown that PCA could clearly distinguish the various protein mixtures. From the loadings, it was possible to draw conclusions about the peak intensity distribution. Furthermore, PCA was found to be an appropriate statistical tool to identify outlier. Copyright © 2006 John Wiley & Sons, Ltd.
Alkali ion intercalation in V2O5: preparation and laboratory characterization of thin films produced by ALD
Authors: Donsanti F. , Kostourou K. , Decker F. , Ibris N. , Salvi A. M. , Liberatore M. , Thissen A. , Jaegerman W. , Lincot D. 
Published: March 2006

AbstractThin films of V2O5 act as performant alkali ion storage material, with applications mostly in Li microbatteries or in electrochromic windows. Oxide films less than 100 nm thick have been obtained by the Atomic Layer Deposition (ALD) method. The alkali ion insertion has been performed either via an electrochemical cathodic reaction in a non‐aqueous solvent, or from the vapour phase in a vacuum chamber at RT. Both experimental procedures promoted the insertion of large amounts of the alkali ion with consequent reduction of the oxidation state of V, from 5+ to 4+ and even to 3+, measured with XPS‐UPS. The reversibility of this reaction was a function of the amount of ionic charge inserted, of the substrate used (FTO, Cr‐coated glass) and of the heat treatment adopted for the ALD film. Copyright © 2006 John Wiley & Sons, Ltd.
Effect of oxide thickness on the degradation of organic silane monolayers on silicon wafer surface during XPS measurement
Authors: Sato Masahide , Furusawa Takeshi , Hotta Takahide , Watanabe Hidetoshi , Suzuki Noboru 
Published: March 2006

AbstractMany organic materials are damaged and decompose by irradiation of X‐rays during XPS measurements. Factors for the decomposition and/or degradation are considered to be X‐ray, radiant heat and electrons from the X‐ray source, photoelectrons and the inelastically scattered electrons from the sample itself, and so on. We have established the method to evaluate the effect of electrons from the sample by using various inorganic materials as substrates. In this paper, the effect of the thickness of surface oxide layer of silicon wafer on the scission of CCl and CBr bonds in the organic silane monolayers on the wafer surface prepared from chloropropyltrimethoxysilane (CTMS) and bromopropyltrimethoxysilane (BTMS) modifiers has been investigated experimentally. The X‐ray source was monochromatic Al Kα, which eliminates the effect of heat and the electrons from the X‐ray source. Damaging factors evaluated from the decrease of peak intensity and the fitting to the 1st order reaction rate increased with the thickness of the oxide layer and saturated at about 7 nm. Consequently, the electrons from the sample are considered to be one of the main factors for sample degradation. Copyright © 2006 John Wiley & Sons, Ltd.
XPS study of passive films generated on AISI 430 ferritic stainless steel implanted with nitrogen and chromium plus nitrogen
Authors: Abreu C. M. , Cristóbal M. J. , Nóvoa X. R. , Pena G. , Pérez M. C. 
Published: March 2006

AbstractSurface analysis techniques (XPS and grazing incidence X‐ray diffraction GIXRD) and electrochemical techniques are combined to elucidate the effect resulting from N+ single‐implantation and Cr+ and N+ coimplantation in the formation and evolution of passive layers generated on AISI 430 steel in alkaline medium. Nitrogen implantation leads to CrN together with nitrogen as metastable solid solution. The combined implantation of chromium and nitrogen forms a single well‐defined nitride phase, (Cr,Fe)2N1−x. Copyright © 2006 John Wiley & Sons, Ltd.
Electrical and optical characterisation of TiN porous Si/Si structures
Authors: Benzekkour N. , Gabouze N. , Sam S. , Saoula N. , Henda K. 
Published: March 2006

AbstractIn this paper, the electrical and optical behaviour of a new porous silicon (PS) based structure based on a titanium nitride (TiN) covered PS structure has been studied. Titanium nitride was deposited by radio frequency (r.f.) pulverisation of titanium under nitrogen atmosphere. A rectifying behaviour has been observed from the I–V curves of the structures, which suggests a Schottky‐like junction. The change in the electrical parameters such as the ideality factor, resistivity of the film, series resistance (RS), etc. as a function of deposition time is discussed. The value of the refractive index of the TiN layers is found to be 1.04 to 1.09. The values of the extinction coefficient k indicate that the TiN layers are transparent. In addition, spectral response and spectrophotometric measurements of the TiN/PS/Si structure were performed. Copyright © 2006 John Wiley & Sons, Ltd.
An application of ToF‐SIMS to fine papers
Authors: Starlinger Sandra , Eitzinger Bernhard 
Published: March 2006

AbstractThis paper describes the applicability and limitations of time‐of‐flight secondary ion mass spectroscopy (ToF‐SIMS) for the analysis of paper samples based on studies related to fine papers used in the cigarette industry. The focus was on imaging and appropriate ways of image processing and image analysis. Paper cross‐sections were prepared in different ways to analyse the distribution of individual fillers in a paper sheet and to characterise the distribution of the adhesive between paper layers after further processing. As filler distribution in the z‐direction influences important paper properties like opacity or printability, the first part of the study should help paper manufacturers to optimise pigment distribution for a proper control of the desired paper characteristics. In the second part, the impact of various parameters (paper sizing, glue viscosity, machine settings) on the distribution of adhesives between paper layers in the finished product is investigated after further processing by cigarette makers. Statistical analysis of the data reveals some of the complex interactions of these parameters and confirms and quantifies many facts known only from experience in paper making, paper processing and cigarette manufacture. Copyright © 2006 John Wiley & Sons, Ltd.
Quantitative XPS depth profiling for nickel/4H‐SiC contact with layered structure
Authors: Cao Yu , Nyborg Lars 
Published: March 2006

AbstractArgon ion etching is used as the precleaning procedure on 4H‐SiC wafer prior to Ni deposition by means of physical vapor deposition (PVD). The thin film Ni/SiC sample is then vacuum annealed at 800 °C for 20 min. The results of XPS depth profiling show that a layered structure of C and Ni2Si forms during the heat treatment. When depth profiling, preferential etching of Si in Ni2Si occurs, the effect of which decreases as ion beam energy increases. Low energy argon ions reduce the atomic mixing. The etch rates of the Ni2Si and C‐rich layers are estimated from the shift of Ni profiles obtained by measuring the Ni 2p3/2 and Ni 3p intensities. At the end, the measured depth profile is reconstructed after correcting for the influence of the electron attenuation length. Copyright © 2006 John Wiley & Sons, Ltd.
An AES study of the initial stages of oxidation of cerium
Authors: Jiangrong Yang , Xiaolin Wang , Chunli Jiang , Hong Xiao , Lei Lu 
Published: March 2006

AbstractThe initial stages of the oxidation of Ce in an oxygen atmosphere at low pressure and room temperature, after cleaning the surface by Ar+‐ion bombardment, were examined by using Auger electron spectroscopy (AES). It is concluded from this work that the interaction of oxygen with cerium proceeds as follows: (i) dissociative chemisorption for oxygen exposure less than 3 L; (ii) formation of nuclei of Ce2O3 that grow until coalescence for exposure between 3 and 25 L; (iii) thickening of the oxide film grown in the previous stage, which follows a logarithmic law up to 50 L and (iv) formation of CeO2 on the surface of Ce2O3, which grows thicker slowly. Copyright © 2006 John Wiley & Sons, Ltd.
Ink identification by time‐of‐flight secondary ion mass spectroscopy
Authors: He A. , Karpuzov D. , Xu S. 
Published: March 2006

AbstractThis work is devoted to the secondary ion mass spectroscopic application in the studies of ink layering on paper. Optical methods are often unreliable in the identification of ink layering on substrates. We demonstrated the power of time‐of‐flight secondary ion mass spectroscopy (ToF‐SIMS) by measuring the secondary ion mass spectra of handwriting on paper and assessing the characteristic ions for each colored ink. These ions were then used to collect images from overlapping handwritings. It was shown that the method could reliably determine which color was applied to the paper first. This work has potential applications in forensic studies. Copyright © 2006 John Wiley & Sons, Ltd.
Influence of temperature on electrical characteristics of CHx/porous silicon/Si sensing device
Authors: Zouadi N. , Belhousse S. , Cheraga H. , Ouadah Y. , Sam S. , Ouchabane M. , Henda K. , Mahmoudi B. , Gabouze N. 
Published: March 2006

AbstractRecently, a gas sensing device based on hydrocarbons CHx/porous silicon structure was fabricated. The porous samples were coated with hydrocarbons groups deposited by plasma of methane under argon atmosphere. We demonstrated that the structure can be used for detecting a low concentration of a large variety of gases such as ethylene, ethane, CO2, H2 and so on, at room temperature.In the present work, the sensor has been used as sensing material to detect CO2 gas as a function of temperature. Current‐voltage and capacitance‐voltage characterisations show that sensor characteristics are modified by the temperature environment in the presence of gas. Sensitivity of the devices, response time and impedance response to gases exposure at different temperatures have been investigated.In conclusion, the sensor shows a rapid and reversible response to low concentration of the gas studied at temperatures in the range 25–100 °C. Copyright © 2006 John Wiley & Sons, Ltd.
Physico‐chemical study of the interfaces of Mo/Si multilayer interferential mirrors: correlation with the optical properties
Authors: Maury H. , André J.‐M. , Gautier J. , Bridou F. , Delmotte F. , Ravet M.‐F. , Holliger P. , Jonnard P. 
Published: March 2006

AbstractWe present the physico‐chemical and optical study of Mo/Si multilayer interferential mirrors (MIM) with a Si thickness of 2 nm and a Mo thickness varying from 1 to 4 nm. In two other samples, barrier layers of B4C have been added either at the Mo/Si interface or at the Si/Mo interface to enhance the optical index contrast in the soft X rays and to minimize the growth of molybdenum silicides. The physico‐chemical analysis is carried out by X‐ray emission spectroscopy (XES) induced by electrons. The Si 3p density of valence states of the silicon atoms that are present in the multilayers are obtained via the analysis of the band Si Kβ (3p→1s transition) emission band. The emission band of the multilayer is fitted by a weighted sum of the compounds likely to be present at the interfaces: amorphous silicon, MoSi2 and Mo5Si3. From the contribution of the silicides, the thickness of the transition layer is determined. The optical analysis is performed by X‐ray reflectivity (XR) at two wavelengths (0.154 and 0.712 nm). The simulation of the results reveals the importance of considering a four‐layer model to describe one period in the stack. Moreover, we evidence the good performance of the multilayer with a Mo thickness of 3 nm. Copyright © 2006 John Wiley & Sons, Ltd.
X‐ray photoelectron spectroscopy surface quantification of sulfided CoMoP catalysts. Relation between activity and promoted sites. Part II: Influence of the sulfidation temperature
Authors: Gandubert A. D. , Legens C. , Guillaume D. , Payen E. 
Published: March 2006

AbstractThe effect of the sulfidation temperature on the nature and amount of active phases of CoMoP‐type hydrodesulfurization catalysts was investigated. An X‐ray photoelectron spectroscopy quantification approach was developed, allowing us to show a direct relation between the amount of mixed CoMoS active phase as determined by XPS and the catalytic activity. XPS, transmission electron microscopy (TEM) and toluene‐hydrogenation activity correlations also showed that the sulfidation temperatures should range between 350 and 500 °C. Under these conditions the catalysts are mainly composed of MoS2 and CoMoS active phases and present a maximum of activity. Copyright © 2006 John Wiley & Sons, Ltd.
Analytical and experimental investigation of the static friction regime for rubber‐rigid ball contact
Authors: Deladi E. L. , de Rooij M. B. , de Vries E. G. , Schipper D. J. 
Published: March 2006

AbstractThe static friction regime is of great importance for systems requiring accurate positioning. The parameters of the static friction regime in terms of static friction force and limiting displacement before gross sliding are investigated for a rubber ball/metal flat configuration. Single‐asperity friction measurements carried out on a Nano‐Tribometer revealed that the static friction parameters depend on various parameters such as normal load (pressure), geometry (radius of the ball) and velocity. The coefficient of static friction decreases significantly by increasing the normal load, while the preliminary displacement increases. Smaller radii of the ball determine a smaller static friction force but a greater limiting displacement. Tests that were run at higher velocities resulted in a decrease of the coefficient of static friction as well as of the limiting displacement. The experimental results show a good agreement with those calculated with the developed static friction model for a load‐controlled case, in which the viscoelastic behaviour of rubber has been modelled by a mechanical model. Copyright © 2006 John Wiley & Sons, Ltd.
Study of the interaction of hydrolysed silane solutions with pre‐treated aluminium substrates
Authors: Franquet A. , Biesemans M. , Terryn H. , Willem R. , Vereecken J. 
Published: March 2006

AbstractThe nature of the interface between thin organosilane bis‐1,2‐(triethoxysilyl)ethane (BTSE) films and alkaline‐cleaned aluminium surfaces has been investigated using XPS. The literature states that an oxane bond (MOSi) is formed by the reaction occurring between OH groups of both the silane and the metal surface. However, in the case of aluminium, the existence of this interfacial bonding is ambiguous. It will be demonstrated that the analysis of a reference silane, i.e. di‐s‐butoxyaluminoxytriethoxysilane (DBAS), having an AlOSi linkage in its chemical structure is very useful for the understanding of the presumed AlOSi bond at the interface between thin BTSE films and alkaline pre‐treated aluminium surfaces. In addition, the influence of the experimental conditions on OH groups, necessary for a good interaction, in the silane solution and at the aluminium surface has been investigated by means of nuclear magnetic resonance (NMR) and infrared spectroscopic ellipsometry (IRSE) respectively. Copyright © 2006 John Wiley & Sons, Ltd.
Impact of Al and Cr alloying of TiN‐based PVD coatings on its cutting performance
Authors: Kovalev Anatoly , Wainstein Dmitry L. , Fox‐Rabinovich German , Yamamoto Kenji , Veldhius Stephen 
Published: March 2006

AbstractThe life of the cutting tools with TiN‐based coatings has been evaluated under turning and end milling. TiAlN and two compositions of TiAlCrN (25:65:10 and 10:70:20) coatings were investigated. The microhardness and the microhardness dissipation parameter of TiAlN and TiAlCrN coatings were measured. The energy band structure of the TiN‐based system has been calculated using EELFS data on surface atomic structure by self‐consistent density functional methods (ZINDO1). It was shown that the addition of Al to the TiN coating significantly reduce the inhomogenity of the electron density distribution within the volume of the molecules and a reduction in the chemical reactivity of the TiAlN coating. The addition of chromium to the TiN‐based nitrides also changes their electron structure decreasing the ion‐covalent character of the interatomic bonds of the crystal lattice while the hybridization of the d π‐electronic states responsible for the metallic atom bonds within the crystal lattice. The probability of the electron transfer to the condition zone also increases. All these features explain the phenomenon of the plasticity improvement in the TiN‐based compounds alloyed with Cr. Simultaneous addition of Cr and Al in the complex TiN‐based nitride weakens the long‐range bonds within the crystal lattice and reduces the polarity of these bonds down. This results in the enhancement of the plasticity of these compounds and improves the life of coated end‐mill cutters. Copyright © 2006 John Wiley & Sons, Ltd.
XPS and contact angle study of N2 and O2 plasma‐modified PTFE, PVDF and PVF surfaces
Authors: Vandencasteele Nicolas , Merche Delphine , Reniers François 
Published: March 2006

AbstractPoly tetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF) and polyvinyl fluoride (PVF) polymer surfaces were exposed to a remote N2 or O2 r.f. plasma. The effect of the plasma power and treatment time on the surface energy and the surface composition were studied by static water contact angle (WCA) and X‐ray photoelectron spectroscopy (XPS). In every case, a strong defluorination of the surface was observed. Except for PTFE treated by oxygen, all the surfaces became more hydrophilic after plasma treatment, owing to the grafting of polar nitrogen or oxygen functions. The kinetics of defluorination and grafting seems to be favoured for PVDF and PVF surfaces. Copyright © 2006 John Wiley & Sons, Ltd.
Detection and analysis of nitrogen‐containing pesticides in environment by surface‐ionization methods
Authors: Khasanov U. , Rasulev U. Kh. , Usmanov D. T. , Iskhakova S. S. 
Published: March 2006

AbstractThe results of a study of the possibilities of surface‐ionization mass spectrometry (SI/MS) and atmospheric‐pressure thermodesorption surface‐ionization spectroscopy (APTDSIS) for high‐sensitivity and selective detection and identification of nitrogen‐containing pesticides are presented for some trisubstituted 1,3,5‐triazines (prometryne, atrazine) and aromatic amines (trifluralin). An oxidized W band in vacuum (SI/MS) and oxidized Mo crystals doped with Ir in air (APTDSIS) were used as ion emitters. The SI mass spectra of pesticides have a small number of lines and consist of the ion lines (M + H)+, M+, (M − H)+ and (M − R)+, being the products of chemical reactions in the adlayer (M is the molecule; H is the hydrogen atom; R is the radical). The herbicide molecules are ionized by SI with high efficiency. The APTDSIS spectra of pesticides have two characteristic maxima connected with energy of sublimation and desorption. The SI efficiency increases in the order 2.5, 35 and 72 C/mol for trifluralin, atrazine, prometryne, respectively, and is within the linear range of the concentration dependence of 2–4 orders of magnitude. The results obtained by the SI/MS and APTDSIS methods have been compared with those obtained by GC/MS with electron ionization. Copyright © 2006 John Wiley & Sons, Ltd.