bluuebunny/crossref_metadata_2025_split huggingface dataset:
Manufacturing Control and Optimization of SiGe(C) HBT Epitaxial Growth
Authors: Zhang Nancy , Tan Poh Cheng , Rodriquez Angel , Prando Greg , Nguyen Chinh , Sinn Craig , Fung Min Su , Safran Laura , Lehman Gerold (Jerry) , Gausepohl Steve , Mase Jerry , Bell Nancy 
Published: November 2006

Reduced pressure (RP) epitaxial (EPI) growth is the core of state-of-the-art Silicon-Germanium-Carbon (SiGe:C) heterojunction bipolar transistors (HBT) construction.	In- line control of large volume production is a continuing task for wafer Fabs. A special technique of monitoring product wafers has been developed for use in both process and tool control. The cost of additional operations and wafers can therefore be minimized. The NPN collector current was used as the device variability measurement during this SiGe:C EPI process optimization study.
Analysis of Gate Leakage in Strained Si MOSFETs
Authors: Yan Liang , Olsen Sarah H. , Kanoun Mehdi , Al-Araimi Mohammed , Agaiby Rimoon , Dalapati Goutam , O'Neill Anthony 
Published: November 2006

This work investigates gate leakage mechanisms in advanced strained Si/SiGe MOSFET devices. The impact of virtual substrate Ge content, epitaxial material quality, epitaxial layer structure and device processing on gate oxide leakage characteristics are analysed in detail. We show that at high oxide electric fields where gate leakage is dominated by F-N tunneling, tensile strained Si MOSFETs exhibit lower leakage levels compared with bulk Si devices. However for device operating regimes at lower oxide electric fields Poole-Frenkel (P-F) emissions contribute to strained Si gate leakage and increase with increasing virtual substrate Ge content.	The emissions are shown to predominantly originate from surface roughness generating bulk oxide traps, opposed to Ge diffusion, and can be improved by introducing a high temperature anneal. Consequently advanced strained Si/SiGe devices are inadvertently subject to a potential trade-off between power consumption (gate leakage current) and device reliability (gate oxide interface quality).
The Challenges of Ge-Condensation Technique
Authors: Terzieva Valentina , Caymax Matty R. , Souriau Laurent , Meuris Marc M. , Clemente Francesca , Benedetti Alessandro 
Published: November 2006

Ultra-thin SiGe films on insulator with high Ge fraction were fabricated through Ge condensation. To achieve that strained Si0.75Ge0.25 layers were grown epitaxially on SOI wafers and oxidized in O2 at 1150ºC for various times. Raman measurements and X-TEM revealed the importance of purity of oxidation ambient for the oxidation process. Traces of moisture in the oxygen flux accelerate the process causing a switch from dry to wet oxidation mechanism, leading to complete oxidation of the starting layer in only 1 hour.	The crystal quality and overall uniformity of such layers however is poor. The use of 100% dry oxygen provides the necessary control over the oxidation process. This allowed relaxed SiGe layers with concentration of Ge up to 45% and higher to be obtained. X-TEM indicated good crystalline quality and uniform layers with no threading dislocations or other defects introduced during oxidation.
Silicon-Carbon Source/Drain: Selective Epitaxy, Process Integration, and Transistor Strain Engineering
Authors: Yeo Yee-Chia 
Published: November 2006

We examine the technology options for the enhancement of electron mobility in n-channel metal-oxide-semiconductor field-effect transistors, focusing on channel strain engineering using lattice-mismatched source/drain (S/D) materials. Silicon-carbon (Si1-yCy) S/D induces lateral tensile strain in the Si channel for electron mobility and drive current improvement.	This has been demonstrated on bulk planar transistors, silicon-on-insulator transistors, and multiple-gate transistors. Further performance enhancement is achieved by the combination of multiple-stressors, e.g. Si1-yCy S/D and silicon nitride liner stressor. Process integration issues and strain enhancement approaches are discussed.
Improvement of Heat-Treated Fe/N/C-Based Catalysts for Oxygen Reduction in PEM Fuel Cells By Using New Carbon Black Powders as Catalyst Supports
Authors: Ruggeri Stéphane , Dodelet Jean-Pol 
Published: November 2006

Several new developmental carbon blacks were prepared at the Sid Richardson Carbon Black Corporation by injecting ammonia, methane or water vapor in the carbon black furnace during their fabrication. These new carbon powders were then used to obtain Fe/N/C catalysts for oxygen reduction reaction (ORR) in the acidic conditions prevailing in PEM fuel cells. The best catalysts were obtained when ammonia and methane were injected in the carbon black furnace during its production. The results are interpreted in terms of structural changes induced in the carbon blacks during their fabrication.	These changes influence their subsequent reaction rate with NH3 when the structurally modified carbon black supports, loaded with 0.2 wt% Fe, are heat-treated at 950 degrees Celcius in pure ammonia to obtain the catalysts. This etching reaction produces up to ten times more catalytic sites with these modified carbon blacks than with their respective regular forms.
A Pyrochlore-Type Oxide Electrocatalyst for DMFC
Authors: Shimizu Youichi , Takase Satoko , Otsubo Takamasa 
Published: November 2006

Electrocatalytic properties of various pyrochlore-type oxides synthesized by a co-precipitation method were systematically investigated for methanol oxidation for the electrocatalyst of the direct methanol fuel cell (DMFC). The best anode performance was achieved with the electrode containing	Pb1.75Bi0.25Ir2O7-Z or Pb2Ir1.9Pb0.1O7-Z. They also showed high anodic performance per surface area of the catalysts. The Ir4+ state on the surface of the electrocatalyst should be important role for MeOH oxidation.
PEM Fuel Cell Durability With Transportation Transient Operation
Authors: Borup Rod , Davey John , Garzon Fernando , Wood David , Welch Paul , More Karren 
Published: November 2006

PEM fuel cell durability testing is performed with tests conducted using steady-state conditions, with dynamic conditions using power cycling simulating a vehicle drive cycle and by accelerated testing methods. The long-term performance characteristics of MEAs, Electrocatalysts and Gas Diffusion Layers (GDLs) and their impact on PEMFC durability are evaluated in terms of their associated degradation mechanisms. Testing simulating automotive drive cycles show a greater rate of particle growth than do tests in which the cell potential is held constant.	The loss of electroactive Pt surface area is shown to be due primarily to the growth in platinum particle size; particle growth appears to have multiple growth mechanisms. Cathode particle size growth is dependent on temperature, relative humidity and potential. Cell performance degradation due to mass transport limitations correlates with changing hydrophobicity of GDL materials.
Microfluidic Tools for Assessing the Multiphase Properties of Water in PEMFC Gas Diffusion Electrodes
Authors: Fairweather Joseph , Cheung Perry , Schwartz Daniel T. , St-Pierre Jean 
Published: November 2006

The microfluidic Tempe cell, a new tool for measuring multiphase flow parameters, is presented.	The cell is suitable for acquiring the saturation-dependent capillary pressure, Pc(S), and relative permeability, kr(S), for thin porous PEMFC electrodes. A laser-drilled porous Teflon sample for the validation of capillary pressure measurement is also presented.
Two-Phase Flow in Small Channels and the Implications for PEM Fuel Cell Operation
Authors: Allen Jeffrey 
Published: November 2006

A significant challenge in designing robust PEM fuel cells is managing the flux of water from the humidified reactant streams and the electrochemical reaction. The problem of water management is especially challenging under cold conditions because of the reduced water carrying capacity of the reactant streams as well as the potential for water freezing within the fuel cell assembly which can lead to degradation of the bulk materials and surface treatments of the various fuel cell components. Effective water management begins in the gas flow channels where the product water is removed from the cell. Because of the small length scales associated with the gas flow channels, capillary forces are important to the behavior of liquid surfaces in the channel. This implies that the cross- sectional geometry and surface chemistry of the gas flow channels are important to the behavior of liquid surfaces in the channel and, subsequently, to the behavior of two-phase flow. Recent research efforts have focused on investigating the role of capillarity on the behavior of two-phase flow in systems where capillary forces are important The results of this research are dramatic.	The presence of corners in a small channel can result in a completely different pressure drop and flow morphology from that found in circular cross sections. In addition, a change in the channel wall wetting (hydrophilic or hydrophobic) can also result in unique pressure drops and flow morphologies.
Impact of Functionalization of Nanoparticles on the Barrier Properties of Ionomernanocomposite Membranes for DMFC
Authors: Karthikeyan Chedarampet S. , Nunes Suzana P. , Prado Luis , Schulte Karl 
Published: November 2006

Ionomer nanocomposite membranes based on sulfonated poly (ether ether ketone) were prepared using nanofillers of different shapes such as layered laponite, cylindrical	MCM-41, and spherical aerosil, and were characterized for direct methanol fuel cells. Prior to the preparation of the nanocomposite membranes, the nanofillers were modified using imidazole glycidoxypropyl triethoxysilane (IGPTES). The effect of surface modification of the inorganic nanofillers on the methanol permeability and proton conductivity is studied and discussed in this report. We found that nanocomposite membranes containing functionalized nanofillers displayed lower methanol permeabilities compared to the non-functionalized fillers at the same time retaining the proton conductivity. The effect of surface modification was more pronounced for aerosil membranes, which showed a drastic decrease in permeability and an increase in proton conductivity. However, membrane with modified MCM-41 is the suitable and promising candidate for direct methanol fuel cells as it displayed the best permeability and conductivity values.
Ultra-Shallow Junctions Formed by Co-Implantation and Sub-Melt Laser Annealing
Authors: Felch Susan B. , Falepin Annelies , Severi Simone , Augendre Emmanuel , Noda Taiji , Parihar Vijay , Nouri Faran , Hoffmann Tom , Pawlak Bartek , Eyben Pierre , Vandervorst Wilfried , Thirupapuliyur Sunderraj , Schreutelkamp Robert , Collart Erik , Graoui Houda 
Published: November 2006

This paper presents the benefits of both co-implantation of diffusion-retarding species and ultra-fast annealing techniques as studied on blanket and device wafers. F and C co-implantation with B+ for PMOS and P+ for NMOS combined with conventional spike annealing produce reduced junction depths and improved dopant activation and profile abruptness, as measured on blanket wafers and compared to similar implants without the co-implanted species. Device wafers show that the overlap capacitance is reduced, consistent with the shallower junction depths and reduced lateral diffusion.	The improved dopant activation manifests itself in reduced series resistance and improved Ion values. Depending on the implant conditions, either the gate/extension overlap capacitance or the series resistance can be improved when sub-melt laser annealing is used instead of conventional spike anneal. For both approaches, scanning spreading resistance microscopy (SSRM) measurements confirm the shallow junction depths and reduced lateral diffusion.
Stress Characterization of Polycrystalline Silicon for Advanced CMOS Technologies
Authors: Chen Yuanning , Mercer Doug , Kohli Puneet 
Published: November 2006

As advanced integrated circuit manufacturing moves through the 65nm technology node, we find that polycrystalline silicon (Poly-Si) films can be engineered to modulate the strain in the underlying channel for improved NMOS transistor performance in addition to fulfilling this primary function as the CMOS gate electrodes. In this paper, we study how the deposition conditions for Poly-Si films change the intrinsic stress. The effect of subsequent processing steps, such as ion implantation and rapid thermal annealing (RTA), on the Poly-Si stress are also measured.	Poly-Si films deposited with different conditions are characterized by secondary ion mass spectrometry (SIMS) and sheet resistance. The results show that the compressive stress of columnar Poly-Si films deposited using disilane as the precursor has been reduced by 50% compared with films deposited using silane for the precursor. The stress measurement results confirm that the implant energy modifies the poly-Si film stress: the higher the energy, the lower the compressive stress. The SIMS and sheet resistance data indicate that the deposition conditions can affect the final Poly-Si dopant activation.
III-V MOSFET's with Advanced High k Dielectrics
Authors: Hong Minghwei , Kwo J. Raynien , Chen C. P. , Chang Y. C. , Huang M. L. , Lin C. F. 
Published: November 2006

Ga2O3(Gd2O3), the novel oxide, which was electron-beam evaporated from a gallium- gadolinium-garnet target in UHV, has unpinned the GaAs Fermi level.	Systematic heat treatments under various gases and temperatures were studied to achieve low leakage currents of 10-8 - 10-9 A/cm2 and low Dit's in the range of 4-9 x 1010 cm-2V-1 for Ga2O3(Gd2O3) on InGaAs. By removing moisture from the oxide, thermodynamic stability of the Ga2O3(Gd2O3)/GaAs hetero-structures was achieved with high temperature annealing, which is needed for fabricating inversion-channel MOSFET's. The oxide remains amorphous and the interface remains intact with atomic smoothness and sharpness.	The mechanism of Fermi-level unpinning and the band parameters in atomic layer deposition (ALD)-Al2O3 ex-situ deposited on InGaAs were studied and unveiled. The work of inversion- channel, depletion- mode, and power GaAs MOSFET's using Ga2O3 (Gd2O3) as the gate dielectric was briefly reviewed.
Technology Trend of AMLCDs for Mobile Application
Authors: Yamamoto Yoshitaka , Voutsas Apostolos T. 
Published: November 2006

Novel devices to serve the needs of ubiquitous network require powerful input-output terminals with exceptional characteristics. In response to these requirements, we have developed high performance TFTs and System LCD using CG Silicon® technology. In addition, we have demonstrated advanced system integration technology for mobile application such as sensors, the fusion of	audio with visual and fine picture quality with good image control. And we have been developing Flexible Displays, and a new Reflective LCD technology for achieving super low power consumption.
Room-Temperature Sputter-Deposited Gate SiO2 Films for High Quality Poly-Si TFTs
Authors: Serikawa Tadashi , Miyamoto Takamasa , Ueno Hitoshi , Sugawara Yuta , Uraoka Y. , Fuyuki Takashi 
Published: November 2006

Gate SiO2 films in poly-Si TFTs were fabricated by sputtering at substrate temperature from 300°C down to room-temperature. It was found that poly-Si TFT characteristics of mobility, threshold voltage and subthreshold slope were greatly improved by decreasing substrate temperature. Mobility of the poly-Si TFT for room-temperature was 90 cm2/V.s, much higher than 50 cm2/V.s for 300°C. Moreover, sputtered gate SiO2 poly-Si TFTs showed	high reliability against hot carrier effect even for room-temperature-deposition.
Nonvolatile Amorphous Silicon Thin Film Transistor Memories with the a-Si:H Embedded Gate Dielectric Structure
Authors: Kuo Yue , Nominanda Helinda 
Published: November 2006

An a-Si:H TFT memory with an a-Si:H layer embedded in the	gate dielectric structure has been studied. Fabrication steps for this floating gate structure include a simple one-pump down PECVD and a two--photo mask lithography process. Hysteresis of the transfer characteristic demonstrates the memory function. A steady difference between the threshold voltage of the	write and erase state demonstrates the programmability of the memory. A charge retention time of more than 3600 secs has been shown. This new structure could expand the application of conventional a-Si:H TFTs.
Can 3-D Devices Extend Moore's Law Beyond the 32 nm Technology Node?
Authors: Orlowski Marius , Wild Andreas 
Published: November 2006

Beyond 2007, when the channel length is projected to be 25 nm, effective scaling of classical planar bulk MOSFETs is expected to come to an end. Below 25 nm channel length, achieving adequate electrostatic control of short channel effects poses the most serious challenge. Non-classical double-gate, ultrathin-body transistors offer to minimize short-channel effects and allow for more aggressive scaling.	Several three- dimensional (3-D) multigate structures such as FinFET, Trigate, MIGFET, ITFET have been demonstrated with good electrical characteristics down to gate lengths of 10 nm. The manufacturing of 3D devices is entirely compatible with the integration processes employed for planar CMOS MOSFETs. Provided that fabrication, yield, design, and cost issues can be rendered tractable, 3D devices are poised to breathe new life into Moore's Law and close the gap between traditional CMOS planar MOSFETs and post-CMOS-era starting at gate lengths of 6 nm.
Atmospheric Plasma Conditions Compatible with Wafer to Wafer Bonding Strategies
Authors: Farrens Shari N. , Gabriel Markus 
Published: November 2006

Plasma activation is a surface preparation method that renders semiconductor substrates hydrophilic. The method has several advantages over wet chemical activation strategies because it is a completely dry process that does not alter the topography of the wafer surfaces.	Thus fragile components are not damaged, geometry is not affected and micro-roughness remains unchanged. Plasma preparation of surfaces for wafer bonding is increasing in popularity and naturally there are several techniques available on the market. Plasma systems can be categorized broadly as systems working at atmosphere or in vacuum. An everyday example of the former is arc welding while the common fluorescent light bulb is a well known vacuum plasma application. With regard to semiconductors, vacuum based plasmas are extensively utilized for deposition, etching, cleaning, and surface activation. Bond activation using atmospheric plasma has recently been proved as an appropriate tool for rapid throughput and high bond strengths at low process temperatures for MEMS applications (1,2).
Efficient and Photostable ZnS-Passivated CdS:Mn Quantum Dots
Authors: Bera Debasis , Yang Heesun , Holloway Paul 
Published: November 2006

Efficient photostable ZnS-passivated CdS:Mn (CdS:Mn/ZnS core/shell) luminescent quantum dots (Qdots) were synthesized using a reverse microemulsion process. Inorganically passivated Qdots with a core (CdS:Mn) diameter of ~2.3 nm and a ZnS-shell thickness of ~0.4 nm exhibited improved quantum yield (18 %), as compared to similar n-dodecanethiol-capped (organically passivated) CdS:Mn Qdots (3 %). Upon UV-irradiation in air for 3 hrs, CdS:Mn/ZnS Qdots exhibited photo-brightening and a stable emission with a quantum	yield of 28 %. X-ray photoelectron spectroscopy (XPS) data revealed that this photo- brightening correlated with the development of a ZnSO4 layer on the Qdot surface. A direct current electroluminescence (EL) device with a hybrid organic/inorganic multilayer structure of ITO//PEDOT-PSS//PVK//CdS:Mn/ZnS//Al was tested. The EL data suggested that the electron-hole recombination zone was confined to Mn in the Qdot layer.
Growth of Self-Assembled Quantum Dots, Quantum Rings, and Lateral Bi-Quantum-Dot Molecules by Gas-Source Molecular Beam Epitaxy
Authors: Tu C. W. , Suraprapapich S. , Shen Y.M. , Fainman Y. , Panyakeow S. 
Published: November 2006

Self-assembled InAs quantum dots, quantum rings, and lateral bi- quantum-dot molecules have been achieved using gas-source molecular beam epitaxy under As2 overpressure.	Their morphologies and temperature-dependent photoluminescence of QDs and BQDMs are presented.
Study of the Impact of Electron Traps on GaN HEMT Reliability
Authors: Katzer D. Scott , Mittereder Jeffrey , Binari Steven , Storm David , Roussos Jason , Klein Paul 
Published: November 2006

In this paper, we will review work done at the Naval Research Laboratory that addresses GaN-based high electron mobility transistor (HEMT) reliability.	Electron trapping effects are especially important in these wide bandgap devices, as they can limit microwave frequency performance and degrade reliability. We will review the utility of current collapse and gate lag measurements in characterizing nitride HEMT device performance. We will conclude with a discussion of the physical origin of these traps and work being done to reduce their density and mitigate their effects.
The Effect of Surface Cleaning on Current Collapse in AlGaN/GaN HEMTs
Authors: Bardwell J. , Haffouz Soufien , McKinnon Ross , Storey Craig , Tang Haipeng , Sproule G. Irwin , Roth Daniel , Wang Rongzhu 
Published: November 2006

The phenomenon of current collapse is a limiting factor in the performance of AlGaN/GaN high electron mobility transistors (HEMTs), and can be ameliorated by the deposition of a silicon nitride passivation film on the surface. The effect of three types of surface cleaning prior to the application of a silicon nitride passivation layer are studied.	The best results were obtained when the wafers were cleaned using an air plasma descum followed by an HCl dip prior to the deposition of the silicon nitride passivation. Auger electron spectroscopy depth profiling indicated that the degree of collapse was correlated with the amount of residual carbon contamination at the silicon nitride/AlGaN interface.
Sensors Based on Spectroelectrochemistry: Detection of Metal Ions
Authors: Heineman William R. , Seliskar Carl J. , Morris Laura K. , Andria Sara E. , Wansapura Chamika , Shtoyko Tanya 
Published: November 2006

Spectroelectrochemical sensors for detecting metal ions have been developed by combining electrochemistry, spectroscopy, and selective partitioning into a single device. The sensor consists of an	optically transparent electrode (OTE) coated with a thin (20-500 nm thick) charge-selective film. Sensing is based on the change in optical signal for attenuated total reflectance (ATR) at the OTE accompanying electrochemical modulation of the analyte that has partitioned into the film. Two properties of the analyte that are important for its sensitive detection are a large optical signal from one of the two oxidation states involved in electrochemical modulation and high loading into the charge-selective film. However, not all metal ions have appropriate spectroscopic properties for sensitive detection. This paper focuses on two strategies for improving sensitivity for metal ions: (a) increasing the molar absorptivity difference between the electromodulated oxidation states and (b) enhancing preconcentration of analyte into the charge-selective film.