bluuebunny/crossref_metadata_2025_split huggingface dataset:
Gene profiling and pathway analysis of neuroendocrine transdifferentiated prostate cancer cells
Authors: Mori Ryutaro , Xiong Shigang , Wang Qingcai , Tarabolous Chad , Shimada Hiroshi , Panteris Eleftherios , Danenberg Kathleen D. , Danenberg Peter V. , Pinski Jacek K. 
Published: September 2008

AbstractBACKGROUNDNeuroendocrine (NE) cells are present in both normal prostate and prostate cancer. In addition, NE differentiation can be induced by various factors, such as IL‐6, in vitro and in vivo. However, the mechanism of this differentiation and the role of NE cells in prostate cancer are not well understood. In this study, we evaluated the gene expression and analyzed the pathways in prostate cancer cells exposed to various NE differentiation inducing factors in vitro.METHODSGene expression signatures between control LNCaP cells and each treatment induced NE cell line were compared using Affymetrix GeneChip with network and pathway analysis.RESULTSAll treatments were able to transdifferentiate LNCaP cells into NE phenotype as shown by morphology changes and NE marker measurements. Of the 54,675 oligonucleotide‐based probe sets in microarray, 44,975 were mapped into the Ingenuity Pathway Analysis database and were filtered according to the t‐test P value. At P < 0.002, the number of genes that were differentially expressed included 302 of the IL‐6 treated cells, 201 of genistein, 233 of epinephrine, and 191 of the charcoal stripped serum ones. A pooled data approach also showed 346 differentially expressed genes at the same P value. Gene ontology analysis showed that cancer‐related function had the highest significance.CONCLUSIONSDespite some overlap, each NE transdifferentiation inducing treatment was associated with a changed expression of a unique set of genes, and such gene profiling may help to elucidate the molecular mechanisms involved in NE transdifferentiation of prostate cancer cells. Prostate 69: 12–23, 2009. © 2008 Wiley–Liss, Inc.
Species‐specific insecticide resistance to imidacloprid and fipronil in the rice planthoppers Nilaparvata lugens and Sogatella furcifera in East and South‐east Asia
Authors: Matsumura Masaya , Takeuchi Hiroaki , Satoh Masaru , Sanada‐Morimura Sachiyo , Otuka Akira , Watanabe Tomonari , Van Thanh Dinh 
Published: September 2008

AbstractBACKGROUND: In 2003 the development of insecticide resistance against neonicotinoids in the brown planthopper (BPH), Nilaparvata lugens (Stål) (Homoptera: Delphacidae), was first observed in Thailand and has since been found in other Asian countries such as Vietnam, China and Japan. However, the LD50 values of BPH and the whitebacked planthopper (WBPH), Sogatella furcifera (Horváth), against both neonicotinoid and phenylpyrazole insecticides have been poorly reported in many Asian countries.RESULTS: The topical LD50 values for imidacloprid in the BPH populations collected from East Asia (Japan, China, Taiwan) and Vietnam in 2006 were 4.3–24.2 µg g−1 and were significantly higher than those collected from the Philippines (0.18–0.35 µg g−1). The BPH populations indicated a positive cross‐resistance between imidacloprid and thiamethoxam. Almost all the WBPH populations from Japan, Taiwan, China, Vietnam and the Philippines had extremely large LD50 values (19.7–239 µg g−1 or more) for fipronil, except for several populations from the Philippines and China.CONCLUSION: Species‐specific changes in insecticide susceptibility were found in Asian rice planthoppers (i.e. BPH for imidacloprid and WBPH for fipronil). Insecticide resistance in BPH against imidacloprid occurred in East Asia and Indochina, but not in the Philippines. In contrast, insecticide resistance in WBPH against fipronil occurred widely in East and South‐east Asia. Copyright © 2008 Society of Chemical Industry
Application of MSM bulk material in a hybrid microactuator
Authors: Spasova B. , Ruffert C. , Wurz M. C. , Gatzen H. H. 
Published: September 2008

AbstractSmart materials such as magnetic shape memory (MSM) metals allow to coming up with new actuators with a rather simple design. NiMnGa MSM material was applied for creating a hybrid microactuator. Two MSM stripes are mounted in a row. Thin‐film stators provide a magnetizing field causing a magnetic field induced strain (MFIS) in NiMnGa MSM stripes. However, the magnetic field is only used for elongating the stripes. The stripe subjected to strain is returning the other MSM stripe mechanically into its non‐strained state and vice versa. Compressing them to their non‐strained state is provided by mechanical means. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Hot‐wire CVD of copper films on self‐assembled‐monolayers of MPTMS
Authors: Papadimitropoulos G. , Arapoyianni A. , Davazoglou D. 
Published: September 2008

AbstractSelf‐assembled monolayers (SAM's) of (3‐Mercaptopropyl)trimethoxysilane (MPTMS) were applied on Si (100) wafers covered either with low‐temperature silicon oxide (LTO) or with SiLK®. Cu films were subsequently chemically vapor deposited (CVD) on the MPTMS SAMs with a novel reactor equipped with a tungsten hot‐wire enabling the separate heating of the gas phase (hot‐wire CVD, HWCVD). CupraSelect®, which is the commercial name of hexafluoroacetylacetonate Cu(I) trimethylvinylsilane, was used as precursor for the deposition of Cu films and delivered in the reactor with the aid of a direct‐liquid injection system using ultra‐pure N2 as carrier gas. High quality Cu films were obtained on both LTO and SiLK®. The resistivities of HWCVD Cu films were found to be higher than those of thermally grown films. This is due possibly to the presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament, which does not, however, degrade catastrophically the conductivity of Cu HWCVD films. The separate heating of the gas phase enhanced the deposition rate, which at filament temperature of 170 °C increases by a factor of approximately one and a half. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Enhanced95Zr diffusion in grain boundaries of nano‐crystalline ZrO2·9.5 mol% Y2O3
Authors: Drings Harald , Brossmann Ulrich , Carstanjen Heinz‐Dieter , Szökefalvi‐Nagy Ágnes , Noll Cornelia , Schaefer Hans‐Eckhardt 
Published: September 2008

AbstractThe95Zr cation self‐diffusivity in fully‐dense, nanocrystalline cubic ZrO2·9.5 mol% Y2O3(n‐YSZ, mean grain size 50 nm) has been studied by tracer self‐diffusion and precision‐grinding sectioning. In the temperature range of 897 °C to 937 °C the95Zr diffusion coefficient in grain boundaries was found to be about 7 orders of magnitude higher than in single crystals of similar composition. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Stability of dislocation structures in copper towards stress relaxation investigated by high angular resolution 3D X‐ray diffraction
Authors: Jakobsen Bo , Poulsen Henning Friis , Lienert Ulrich , Bernier Joel , Gundlach Carsten , Pantleon Wolfgang 
Published: September 2008

AbstractA 300 µm thick tensile specimen of OFHC copper is subjected to a tensile loading sequence and deformed to a maximal strain of 3.11%. Using the novel three‐dimensional X‐ray diffraction method ‘High angular resolution 3DXRD', the evolution of the microstructure within a deeply embedded grain is characterised in‐situ by the behaviour of individual subgrains. The loading sequence consists of three continuous deformation stages with strain rates of 1.1 × 10–6 s–1 and 3 × 10–2 s–1, in each case followed by a period of extended stress relaxation at fixed motor positions, as well as an unloading step. In contrast to the deformation stages, during each stress relaxation stage, number, size and orientation of subgrains are found to be constant, while a minor amount of clean‐up of the microstructure is observed as narrowing of the radial X‐ray diffraction line profile. The associated decrease in the width of the strain distribution indicates homogenization of the elastic strains present in the deformation structure. During reloading, the subgrain structure seemingly starts to develop further when the entire dislocation structure is deforming plastically. Upon unloading of the sample, the average backward strain of the subgrains increases. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Growth, evolution and photocatalytic activity of ZnO nano back‐tapered arrays
Authors: He Z. B. , Jiang Y. , Zhang W. J. , Zapien J. A. , Liu Y. , Zhang W. F. , Bello I. 
Published: September 2008

AbstractZinc oxide arrays of conical and hexagonal back‐tapered nanocolumns with well‐developed, flat and horizontal (0001) facets were synthesized on gold‐coated (100) silicon substrates by a thermal evaporation process. Evolution of these conical and back‐tapered structures was investigated by analysis of their morphological and chemical structures in different growth phases employing scanning electron microscopy, energy‐dispersive X‐ray spectroscopy and cathodoluminescence imaging. This study reveals that an ultrathin gold film predeposited on silicon is required to provide nucleation sites and form ZnO grains that progressively grow to vertical nanostructures. The growth process is assisted by carbon‐reduced zinc droplets deposited from the gas phase on the ZnO grains that evolve into back‐tapered nanocanonical and hexagonal columns. These nanostructures are shown to be effective in the degradation of organic dyes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Ammonium oxotrifluorotitanate: morphology control and conversion to anatase TiO2
Authors: Zhou Lei , O'Brien Paul 
Published: September 2008

AbstractUniform ammonium oxotrifluorotitanate (NH4TiOF3) mesocrystals were synthesized from an aqueous solution containing (NH4)2TiF6 and H3BO3 in presence of nonionic surfactant. Effects of various reaction conditions on the morphology of the NH4TiOF3 mesocrystals were examined by electron microscopy techniques. Results indicate that static solution, high surfactant concentration and low reaction temperature enhance the formation of uniform NH4TiOF3 mesocrystals with regular shapes. By sintering in atmosphere, the NH4TiOF3 mesocrystals were converted to anatase TiO2, which retain the original shapes of the NH4TiOF3 precursor due to similarities on their atom structures. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electron momentum density in zinc oxide
Authors: Kothari R. K. , Sharma M. , Joshi K. B. , Sharma B. K. 
Published: September 2008

AbstractThe electron momentum density distribution in zinc oxide is reported. The momentum density distribution is determined experimentally through Compton profile measurement on polycrystalline ZnO by employing an annular 5Ci Am241 Compton spectrometer. Theoretical comparison is done through LCAO calculations under the hybrid scheme using CRYSTAL code. The calculated Compton profile is found to be in good agreement with the measurement. On the basis of equal‐valence‐electron‐density (EVED) profiles, partial covalent character of bonding is observed in ZnO. ZnO is found to be more ionic than the ZnS and ZnSe. The charge transfer mediated by p–d hybridization is predicted to be responsible for the partial covalent nature. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Elasticity, electronic structure, and dielectric property of cubic SrHfO3 from first‐principles
Authors: Hou Z. F. 
Published: September 2008

AbstractRecently, SrHfO3 compound was proposed as a potential gate dielectric to fabricate metal–oxide–semiconductor field‐effect transistors (MOSFET) with equivalent oxide thickness (EOT) below 1 nm. Here we report the elasticity, electronic structure, and dielectric property of cubic SrHfO3 from first‐principle study based on the plane‐wave pseudopotential method within the local density approximation (LDA). The independent elastic constants of cubic SrHfO3 are derived from the derivative of total energy as a function of lattice strain. The elastic modulus is predicted from Voight‐Hill bounds. The Born effective charges, electronic dielectric tensors, long wavelength phonon frequencies, and LO–TO splitting of cubic SrHfO3 are computed by linear response with density functional perturbation theory (DFPT). The calculated lattice constant and bulk modulus of cubic SrHfO3 are in good agreement with the available experimental data and other theoretical results. Our results show cubic SrHfO3 is a ductile insulator with an indirect band gap of 3.74 eV (LDA value) and electric dielectric tensor of 4.43, Hf 5d states and O 2p states exhibit a strong hybridization, and cubic SrHfO3 can be mechanically stable. In addition, the phonon frequency of ‘soft mode' at zone‐center also agrees well with previous theoretical value. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Two‐dimensional thermoelectric Seebeck coefficient of SrTiO3‐based superlattices
Authors: Ohta Hiromichi 
Published: September 2008

AbstractThis review provides the origin of the unusually large thermoelectric Seebeck coefficient |S | of a two‐dimensional electron gas confined within a unit cell layer thickness (∼0.4 nm) of a SrTi0.8Nb0.2O3 layer of artificial superlattices of SrTiO3/SrTi0.8Nb0.2O3 [H. Ohta et al., Nature Mater. 6, 129 (2007)]. The |S |2D values of the [(SrTiO3)17/(SrTi0.8Nb0.2O3)y ]20 superlattice increase proportional to y–0.5, and reach 290 μV K–1 (y = 1) at room temperature, which is ∼5 times larger than that of the SrTi0.8Nb0.2O3 bulk (|S |3D = 61 μV K–1), proving that the density of states in the ground state for SrTiO3 increases in inverse proportion to y. The critical barrier thickness for quantum electron confinement is also clarified to be 6.25 nm (16 unit cells of SrTiO3). Significant structural changes are not observed in the superlattice after annealing at 900 K in a vacuum. The value of |S |2D of the superlattice gradually increases with temperature and reaches 450 μV K–1 at 900 K, which is ∼3 times larger than that of bulk SrTi0.8Nb0.2O3. These observations provide clear evidence that the [(SrTiO3)17/(SrTi0.8Nb0.2O3)1]20 superlattice is stable and exhibits a giant |S | even at high temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
H‐ and D‐related mid‐infrared absorption bands in Ga1–yIny As1–xNx epitaxial layers
Authors: Alt Hans Christian , Messerer Peter , Köhler Klaus , Riechert Henning 
Published: September 2008

AbstractEpitaxially grown ternary and quaternary layers of GaAs based dilute nitrides have been exposed to H+ and D+ ion bombardment to investigate the interaction between hydrogen (deuterium) and nitrogen. Low‐temperature Fourier transform infrared absorption measurements reveal the formation of N–H (N–D) complexes by the appearance of high‐frequency absorption bands in the mid‐infrared due to vibrational modes of H(D). In thin layers, the transformation of isolated substi‐ tutional nitrogen, NAs, into complexes involving H (D) is complete, in thick (500–1000 nm) layers only partial. Analyses of the band intensities dependent on variations of the sample structure and parameters during ion irradiation challenge the model of a unique defect associated with the observed vibrational modes. A new model is proposed based on two different N–H (N–D) centers, each involving one H (D) atom. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Influence of different substrates on the ionic conduction in LiCoO2/LiNbO3 thin‐film bi‐layers
Authors: Horopanitis E. E. , Perentzis G. , Papadimitriou L. 
Published: September 2008

AbstractLiNbO3 thin films, deposited by e‐gun evaporation, show lithium deficiency, which is cured by “Li doping”. The “Li doping” of the films was achieved by preparing a structure of Li‐Nb‐O/Li/Li‐Nb‐O, which after annealing forms a homogenized LiNbO3 layer because of diffusion of Li in the two Li‐Nb‐O layers. The LiCoO2/LiNbO3 bi‐layers were prepared either on Stainless Steel/TiN or on Al2O3/Co/Pt substrates/ohmic‐contacts by depositing first either the cathode LiCoO2 or the electrolyte LiNbO3. The Nyquist plots of the AC impedance measurements of all structures showed that the interfaces prepared on Stainless‐Steel/TiN consisted of two semicircles. The structures deposited on Al2O3/Co/Pt showed a third semicircle, which is probably due to the roughness of the substrate. It is important that the ionic properties of the bi‐layers with the cathode material deposited first, a usual structure in a microbattery, are improved compared to the other structures. The quality of the LiNbO3 layer depends very much on the substrate. It can be evaluated from Arrhenius plots that the activation energy of this layer is considerably lower when the whole structure is deposited on Stainless Steel/TiN. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The properties of the nanometer thick Si/Ge films‐on‐insulator produced by Ge+ ion implantation and subsequent hydrogen transfer
Authors: Tyschenko I. E. , Voelskow M. , Cherkov A. G. , Popov V. P. 
Published: September 2008

AbstractThe behaviour of germanium implanted into the SiO2 layers in the vicinity of the bonding interface of silicon‐on‐insulator (SOI) structures has been studied. The enhanced segregation of the implanted Ge atoms at the Si/SiO2 bonding interface has been observed. Segregated Ge atoms form the layer, which is coherent with the silicon lattice. It is suggested that the formation of intermediate Ge layer is mediated by the occurrence of liquid Ge phase. The effect of Ge on the Hall mobility of holes in the 25 nm thick SOI layer was studied. An increase in the hole mobility by a factor of three was obtained in the SiGe‐on insulator structures in comparison with that measured in the respective Ge‐free SOI films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The effect of the size of self‐assembled individual quantum dots on their PL spectra
Authors: Zora A. , Simserides C. , Triberis G. P. 
Published: September 2008

AbstractBased on an analytical expression for the photoluminescence (PL) intensity of individual quantum dots (QDs) in the linear regime, we investigate its dependence upon the size of self‐assembled InGaAs QDs. We prove that decreasing the QD size, the PL‐emission spectrum moves to higher energy, due to the confinement‐induced blue‐shift of the electronic levels and the redshift from the increased Coulomb interaction caused by the compression of the exciton radii. This shift is in agreement with experimental results. Moreover, we show that larger dots provide more intense PL spectra. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
RF MEMS status and perspectives
Authors: Coccetti Fabio , Peyrou David , Al Ahmad Mahmoud , Puyal Vincent , Pons Patrick , Aubert Hervé , Muller Alex , Dragoman Mircea , Plana Robert 
Published: September 2008

AbstractThe key challenges for the next generation of communication architectures are related to their ability to modify their properties in order to fit with different applications and environmental conditions. Among the emerging approaches targeting these miniaturized systems called “Smart Microsystems”, RF MEMS technology is considered as one of the most attractive and enabling solution. This paper will outline the main characteristics exhibited by RF MEMS technologies as well as the main technological process flow, the design and modelling methodologies that have to be implemented in order to meet the multi‐physics and multi‐scale challenge encountered in this field. The paper will continue with a major issue faced by RF MEMS related to reliability. Finally, the paper will finish with the presentation of innovative smart devices and systems that could be envisioned in the future. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Flexible WO3 based electrochromic displays using proton conducting solid electrolytes
Authors: Vasilopoulou M. , Botsialas A. , Argitis P. , Aspiotis G. , Papadimitropoulos G. , Davazoglou D. 
Published: September 2008

AbstractAll solid‐state flexible electrochromic displays were fabricated based on WO3 films deposited below 50 °C by heating a hot wire in a rough vacuum of the order of 1 Torr. Indium Tin Oxide (ITO) covered polyethylene tetraphthalate (PET) substrates and gel‐like organic electrolytes were used. These proton conductive electrolytes were based on poly(methyl methacrylate) (PMMA) into which a strong Brönsted phosphododecatungstic acid (H3PW12O40‐POM) was added at various concentrations. Transmittance measurements were recorded and it was found that all displays exhibited an intense, reversible electrochromic effect. The coloring voltage was found to depend strongly on the content in solids of the electrolyte, the POM's concentration and the basicity of the polymeric matrix. For devices polarized by voltage pulses it was found that the response time was of the order of 500 ms; coloration and bleaching times were comparable. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Simulation of the electrical characteristics of MOS capacitors on strained‐silicon substrates
Authors: Kelaidis N. , Skarlatos D. , Tsamis C. 
Published: September 2008

AbstractIn this work, we analyze the electrical characteristics of MOS capacitors fabricated on strained silicon substrates using the commercial software Taurus/Synopsis. The effect of various parameters such as Germanium concentration in the Si1–xGex virtual substrate, thickness of the strained‐Silicon layer, oxide thickness, fixed charge and interface trapped charge on capacitance – voltage characteristics is examined. Experimental data are compared with simulation results. A strong influence of the s‐Si/SiGe heterostructure and its proximity to the s‐Si/SiO2 on the electrical characteristics of the system exists. Oxide charge inserted into simulation in order to fit experimental data shows an increase of charge with decreasing s‐Si thickness. The effect of interface traps on simulated C‐V characteristics is identical when traps are situated in the s‐Si/SiO2 or the s‐Si/SiGe interface. When increasing the thermal budget by increasing the post oxidation annealing time, the decrease of the hump phenomenon on the C‐V curves can be attributed to the Germanium diffusion, according to simulation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Towards electrically‐pumped microcavity polariton lasers
Authors: Tsintzos S. , Savvidis P. G. , Konstantinidis G. , Hatzopoulos Z. , Pelekanos N. T. 
Published: September 2008

AbstractWe present preliminary experimental results on a doped‐DBR microcavity diode sample, designed for electrically‐pumped operation at the elevated temperatures around 200 K. Low temperature reflectivity measurements as a function of incidence angle have shown clear evidence of polaritons in the strong coupling regime in this sample. Moreover, reflectivity spectra recorded at various temperatures between 185 and 217 K have demonstrated that the strong coupling regime persists at these elevated temperatures. Our results are very promising for the realization of polaritonic devices under electrical injection. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)