bluuebunny/crossref_metadata_2025_split huggingface dataset:
Utilisation of cardiovascular medicines in Republic of Srpska, Bosnia and Herzegovina, 5 years study
Authors: Markovic‐Pekovic Vanda , Stoisavljevic‐Satara Svjetlana , Skrbic Ranko 
Published: January 2009

AbstractPurposeThe objective of this study was to analyse cardiovascular medicines utilisation patterns in Republic of Srpska (Bosnia and Herzegovina) over the 2002–2006 period.MethodsA retrospective study was taken to analyse utilisation medicines reimbursed by the Health Insurance Fund (HIF), with a focus on cardiovascular medicines utilisation. ATC/DDD methodology was used to monitor utilisation of medicines. Drug utilisation 90% (DU90%) method was used to determine the prescribing quality of cardiovascular medicines.ResultsUtilisation of cardiovascular medicines accounted for more than one half of the total medicines utilisation, with an increasing trend. Most prescribed were antihypertensive medicines i.e. ACE inhibitors, both plain and in combination with thiazide diuretics, and calcium channel blockers (CCB). Utilisation of β‐blockers and thiazide diuretics remains rather low despite an overall increase in utilisation. Re‐introduction of statins in 2004 instantly led to high utilisation. The number of cardiovascular medicines within DU90% segment varies from 8 in 2002 to 12 in 2006.ConclusionsThis study showed a constant increase in total medicines utilisation with the cardiovascular medicines as the most prescribed. DU90% is shown as a simple method for assessing general quality of medicines prescribing, which indicated that better adherence to the guidelines is needed in order to practice a more rational use of medicines and a cost‐efficient use of all resources. More stratified routinely performed analyses are also needed. Copyright © 2009 John Wiley & Sons, Ltd.
Risk factors for suicide following hospital discharge among cancer patients
Authors: Lin Herng‐Ching , Wu Chih‐Hsiung , Lee Hsin‐Chien 
Published: January 2009

AbstractObjectives: This study aims to examine risk factors associated with 3‐month post‐discharge suicide among cancer patients using Taiwan's nationwide, population‐based datasets.Methods: The study cohort comprised all cancer patients discharged from hospitals from 2002 to 2004, inclusive, who committed suicide within 90 days of discharge (n=311). The control group consisted of 1555 cancer patients who did not commit suicide within 90 days of discharge. The dependent variable was whether or not a patient committed suicide within 90 days of discharge, while the independent variables included patient, hospital and physician characteristics at index hospitalization. Cox proportional hazard regression was carried out to compute the 90‐day survival rate, adjusting for possible confounding factors.Results: The mean interval from discharge to suicide was 39.7 days (±95.2) and almost half (46.3%) of the 3‐month post‐discharge suicides occurred within 14 days after discharge. The adjusted hazard of committing suicide for patients who were not hospitalized in the preceding year was 1.68 (p=0.009), 1.61 (p=0.033), and 2.51 (p<0.001) times greater, respectively, than patients who were hospitalized once, twice and more than twice within the year before index hospitalization. The hazard of committing suicide among patients who were unemployed was 1.71 (p<0.001) times that of their employed counterparts.Conclusions: We conclude that, while our study was limited to suicides among cancer patients within 90 days of discharge, around 60% of deaths occurred within the first month after discharge. The relevant risk factors include the number of hospitalizations within 1 year and employment status. Copyright © 2009 John Wiley & Sons, Ltd.
Correlated mutation analyses on super‐family alignments reveal functionally important residues
Authors: Kuipers Remko K. P. , Joosten Henk‐Jan , Verwiel Eugene , Paans Sjoerd , Akerboom Jasper , van der Oost John , Leferink Nicole G. H. , van Berkel Willem J. H. , Vriend Gert , Schaap Peter J. 
Published: January 2009

AbstractCorrelated mutation analyses (CMA) on multiple sequence alignments are widely used for the prediction of the function of amino acids. The accuracy of CMA‐based predictions is mainly determined by the number of sequences, by their evolutionary distances, and by the quality of the alignments. These criteria are best met in structure‐based sequence alignments of large super‐families. So far, CMA‐techniques have mainly been employed to study the receptor interactions. The present work shows how a novel CMA tool, called Comulator, can be used to determine networks of functionally related residues in enzymes. These analyses provide leads for protein engineering studies that are directed towards modification of enzyme specificity or activity. As proof of concept, Comulator has been applied to four enzyme super‐families: the isocitrate lyase/phoshoenol‐pyruvate mutase super‐family, the hexokinase super‐family, the RmlC‐like cupin super‐family, and the FAD‐linked oxidases super‐family. In each of those cases networks of functionally related residue positions were discovered that upon mutation influenced enzyme specificity and/or activity as predicted. We conclude that CMA is a powerful tool for redesigning enzyme activity and selectivity. Proteins 2009. © 2009 Wiley‐Liss, Inc.
Mechanism of formation of the C‐terminal β‐hairpin of the B3 domain of the immunoglobulin binding protein G from Streptococcus. II. Interplay of local backbone conformational dynamics and long‐range hydrophobic interactions in hairpin formation
Authors: Skwierawska Agnieszka , Żmudzińska Wioletta , Ołdziej Stanisław , Liwo Adam , Scheraga Harold A. 
Published: January 2009

AbstractTwo peptides, corresponding to the turn region of the C‐terminal β‐hairpin of the B3 domain of the immunoglobulin binding protein G from Streptococcus, consisting of residues 51–56 [IG(51–56)] and 50–57 [IG(50–57)], respectively, were studied by circular dichroism and NMR spectroscopy at various temperatures and by differential scanning calorimetry. Our results show that the part of the sequence corresponding to the β‐turn in the native structure (DDATKT) of the B3 domain forms bent conformations similar to those observed in the native protein. The formation of a turn is observed for both peptides in a broad range of temperatures (T = 283–323 K), which confirms the conclusion drawn from our previous studies of longer sequences from the C‐terminal β‐hairpin of the B3 domain of the immunoglobulin binding protein G (16, 14, and 12 residues), that the DDATKT sequence forms a nucleation site for formation of the β‐hairpin structure of peptides corresponding to the C‐terminal part of all the B domains of the immunoglobulin binding protein G. We also show and discuss the role of long‐range hydrophobic interactions as well as local conformational properties of polypeptide chains in the mechanism of formation of the β‐hairpin structure. Proteins 2009. © 2009 Wiley‐Liss, Inc.
Nitride‐organic hybrid heterostructures for possible novel optoelectronic devices: charge injection and transport
Authors: Kim Hyunjin , Zhang Qiang , Song Yoon‐Kyu , Nurmikko Arto , Sun Qian , Han Jung 
Published: January 2009

AbstractWe investigate the physical integration of organic thin film semiconductors with (In)GaN to explore new types of “hybrid” heterojunction device structures. Planar nitride‐organic junctions are found to be quite versatile in enabling charge injection across two very different electronic material constituents. Here (In)GaN/CuPc devices were studied in terms of photogenerated charge transport. An efficient photocurrent response was observed at the absorption wavelength of the InGaN quantum well which requires ready photo‐carrier transport across the organic/inorganic interface. Additionally a weaker photocurrent response from CuPc was acquired near its absorption peak around 640 nm, which suggests that some photo‐generated excitons are diffused and dissociated at the hybrid interface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Fabrication of free‐standing GaN substrate using evaporable buffer layer (EBL)
Authors: Lee Hyun‐Jae , Ha Jun‐Seok , Lee Hyo‐Jong , Lee S. W. , Fujii K. , Hong S. K. , Chang J. H. , Cho M. W. , Goto Takenari , Yao T. 
Published: January 2009

AbstractA one‐step approach to obtain high quality free‐standing GaN (FS‐GaN) substrates by hydride vapor phase epitaxy (HVPE) has been developed. FS‐GaN substrates were fabricated by the control of void density at the GaN‐Al2O3 interface using a novel evaporable buffer layer (EBL). The EBL consisted of GaN‐crystallites imbedded in NH4Cl films, and was grown by lowering the growth temperature down to 450 °C under NH3 and HCl ambient in the HVPE system. The NH4Cl was evaporated during heating up for high temperature growth of GaN (HT‐GaN), resulting in high void density, which plays a key role in the self‐separation of thick HT‐GaN during cooling down. The FS‐GaN substrate showed smooth surface morphology without cracks. The full width at half maximum values of (0002) and (10‐10) ω‐rocking curves from a 500 μm‐thick FS‐GaN were 104 and 70 arcsec, respectively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)
Authors: Cordier Y. , Moreno J.‐C. , Baron N. , Frayssinet E. , Chenot S. , Damilano B. , Semond F. 
Published: January 2009

AbstractIn this paper, we report on the growth of AlGaN/GaN based heterostructure on Si(110) substrates by ammonia source molecular beam epitaxy. The structural, optical and electrical properties of such heterostructure are assessed and compared with the ones obtained on Si(111) and Si(001). The quality of the structure on Si(110) is quite similar to the one obtained on Si(111) and better than the one obtained on Si(001). A two‐dimensional electron gas is formed at the Al0.3Ga0.7N/GaN interface with a sheet carrier density of 9.6×1012 cm–2 and a mobility of 1980 cm2/V.s. at room temperature. Preliminary results concerning high electron mobility transistor static characteristics are presented. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing
Authors: Lai K. Y. , Johnson M. A. L. , Paskova T. , Hanser A. D. , Udwary K. , Preble E. A. , Evans K. R. 
Published: January 2009

AbstractThe surface of HVPE grown GaN substrates were treated with two different polishing procedures. Both procedures were successful in producing highly smooth and featureless surfaces. However, subsurface damage was observed in the sample treated by one of the procedures. The subsurface damage was revealed by cathodoluminescence (CL) spectroscopy imaging but was not visible by scanning electron microscopy (SEM) or Atomic force microscopy (AFM). Thermal annealing at 950 °C with different gases was performed in an attempt to remove subsurface damages. Annealing in gas mixtures containing H2 increased both the presence of surface scratches and overall surface roughness. On the other hand, annealing in mixtures of NH3 and N2 (with no H2) led to the surfaces with significantly reduced subsurface damage. The surface roughness and optical properties of the sample after the annealing with such gas mixtures were slightly sacrificed. In order to evaluate subsurface damage depth, CL images were taken from the annealed surface for different acceleration voltages. The results suggest that the observed subsurface damages were within 1.48 μm of the surface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Luminescence properties of thick InGaN quantum‐wells
Authors: Laubsch Ansgar , Bergbauer Werner , Sabathil Matthias , Strassburg Martin , Lugauer Hans , Peter Matthias , Meyer Tobias , Brüderl Georg , Wagner Joachim , Linder Norbert , Streubel Klaus , Hahn Berthold 
Published: January 2009

AbstractIn this paper, we discuss the physics of recombination in thick InGaN quantum‐well (QW) based structures. Thick InGaN QWs have been suggested as one concept to reduce the typical decrease of internal efficiency of InGaN based light emitters towards high current densities. We show that at typical operation current densities, recombination in such thick QWs mainly originates from excited QW‐states, which exhibit good electron hole overlap and large spatial extent, enabling a reduction of carrier density. We identify these states by comparing current dependent electroluminescence spectra to band structure simulations. The reduction of carrier density is verified by measuring current dependent carrier lifetimes. We find that saturation of efficiency is reduced for increasedQWthickness. However, the same effect can also be achieved using an MQW structure optimized for real MQW emission. We conclude that regardless of the employed concept, a decrease in carrier density is central to improve the high current efficiency of InGaN based light emitters (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers
Authors: Kolbe T. , Knauer A. , Wenzel H. , Einfeldt S. , Kueller V. , Vogt P. , Weyers M. , Kneissl M. 
Published: January 2009

AbstractIn this paper we report on the emission characteristics of InGaN multi quantum well light emitting diodes (LEDs) in the near ultra‐violet (UV) spectral range. GaN, AlGaN and InAlGaN with various indium contents were compared as barrier material in the InGaN quantum well active region of the device heterostructure. It was found that the emission wavelength decreases with increasing drive current. This blue shift with an increasing indium content in the quaternary barriers can be attributed to the screening of the polarization fields and band gap renormalization. Light emitting diodes with a constant emission wavelength over a wide current range were realized by using nearly lattice matched InAlGaN barriers. These devices also showed the highest light output power even though the band offset between the quantum wells and the barriers is smaller in comparison to the LEDs with the AlGaN barriers. These effects can be explained by the interplay of a reduction defect density at the quantum well/barrier interface and a improved overlap of the electron and hole wave functions due to the reduction of quantum confined Stark effect. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Modulation of mobility in homoepitaxially‐grown AlGaN/GaN heterostructures
Authors: Grenko J. A. , Ebert C. W. , Reynolds C. L. , Johnson M. A. L. , Hanser A. D. , Preble E. A. , Paskova T. , Evans K. R. 
Published: January 2009

AbstractWe report on the growth of Al0.25Ga0.75N/GaN heterostructures on low dislocation density semi‐insulating c‐axis GaN substrates. Room temperature Hall mobilities up to 1805 cm2/Vs at sheet carrier densities of 0.77x1013 cm–2 have been measured. By varying the GaN buffer layer thickness in these homoepitaxially‐grown Al0.25Ga0.75N/GaN heterostructures, we observed a buffer‐induced modulation of the room temperature 2DEG sheet carrier densities and Hall mobilities. The increase in sheet carrier density and corresponding decrease in mobility as the GaN buffer layer thickness is reduced below 0.75 μm is related to the presence of Si impurities at the bulk GaN substrate/epitaxial interface. Capacitance‐voltage measurements and SIMS analysis confirm the presence of Si impurities at the surface prior to and after epitaxial growth. The factor of 2 reduction in the room temperature mobility is consistent with a predicted theoretical mobility reduction based on intersubband scattering. We have also been able to separate the contributions to the 2DEG carrier density from the ionized donors and the polarization field; the magnitude of each is ∼5x1012 cm–2. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Thermal transitions and heat‐sealing of glycerol‐plasticized whey protein films
Authors: Hernandez‐Izquierdo V. M. , Krochta J. M. 
Published: January 2009

AbstractTransparent, flexible whey protein‐based edible films plasticized with glycerol were produced by wet (solution‐casting) and dry (twin‐screw extrusion followed by compression‐molding) processes. The relationship between the thermal transitions and the heat‐sealability of the whey protein‐based edible films was investigated. Differential Scanning Calorimetry showed the existence of endothermic peaks with an onset transition temperature of 156.3 ± 1.4°C for both the solution‐cast and extruded films. Films were heat‐sealed using an impulse heat‐sealer at an effective jaw pressure of 293.31 kPa, a voltage of 15 V and a cooling time of 4 s. Various impulse times, ranging from 1.5 to 2.5 s, were used to heat‐seal the films. A thermocouple was used to measure the heat‐sealing temperatures at each impulse time. Heat‐sealing temperatures ranged between 126.1 ± 9.0 and 204.0 ± 5.4°C for the shortest and longest impulse times, respectively. Seal strengths were determined using an Instron Universal Testing Machine. Film thickness appeared to have an effect on seal strength; higher strengths were achieved for thinner films, which, in this case, were the solution‐cast films. Thicker (extruded) films required a longer minimum impulse time to achieve a heat‐seal. The highest seal strength (433.07 ± 39.37 N/m) was obtained with solution cast films (thickness of 0.13 ± 0.01 mm) sealed with an impulse time of 2 s (164.6 ± 5.1°C). Impulse times above 2.5 s (204.0 ± 5.4°C) resulted in degradation of both solution‐cast and extruded films. Copyright © 2009 John Wiley & Sons, Ltd.
The effects of item composition, tag inlay design, reader antenna polarization, power and transponder orientation on the dynamic coupling efficiency of backscatter ultra‐high frequency radio frequency identification
Authors: Mc Carthy Ultan , Ayalew Gashaw , Butler Francis , McDonnell Kevin , Ward Shane 
Published: January 2009

AbstractThe effects of packaged content, packaging material, transponder inlay design, reader antenna polarization, interrogation power and transponder orientation on the detection rate of ultra‐high frequency radio frequency identification (UHF RFID) passive transponders were studied. The influence of individual factors and their interactions were determined using general linear model analysis of variance. Influences originated in order of importance, from sample type, antenna polarization, power and inlay design. Important interactions in decreasing order of significance exist between: power and antenna polarization; sample type and antenna polarization; sample type and inlay design; inlay design and antenna polarization; sample type, power and antenna polarization; sample type and power; inlay design and power; sample type, inlay design and power. It was also observed that random orientation of tags did not cause a statistically significant variation in tag detection rate. It can be concluded that the use of UHF RFID for item level of food requires multi‐parameter assessment before hand. Copyright © 2009 John Wiley & Sons, Ltd.
A simple model for the interaction between water vapour and oxygen transmission in multilayer barrier materials intended for food packaging applications
Authors: Jakobsen Marianne , Risbo Jens 
Published: January 2009

AbstractThe above article (DOI: 10.1002/pts.799) was published online on 26 October 2007 in Wiley Interscience (www.interscience.com), and in print in Packaging Technology and Science 21 (4): 207–216. The following errors were subsequently identified.On page 208, in the ninth line of text in the right hand column, pw should not have had the upper indices o.The first equation on page 208 is incorrect and should read:
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The publisher accepts full responsibility for this error and would like to apologise for any confusion caused.
ToF‐SIMS characterisation of methane‐ and hydrogen‐plasma‐modified graphite using principal component analysis
Authors: Deslandes Alec , Jasieniak Marek , Ionescu Mihail , Shapter Joe G. , Fairman Callie , Gooding J. Justin , Hibbert D. Brynn , Quinton Jamie S. 
Published: January 2009

AbstractTime of flight secondary ion mass spectrometry (ToF‐SIMS) has been used to determine the extent of surface modification of highly ordered pyrolytic graphite (HOPG) samples that were exposed to radio‐frequency methane and hydrogen plasmas. The ToF‐SIMS measurements were examined with the multivariate method of principal component analysis (PCA), to maximise the amount of spectral information retained in the analysis. This revealed that the plasma (methane or hydrogen plasma) modified HOPG exhibited greater hydrogen content than the pristine HOPG. The hydrogen content trends observed from the ToF‐SIMS studies were also observed in elastic recoil detection analysis measurements. The application of the ToF‐SIMS PCA method also showed that small hydrocarbon fragments were sputtered from the hydrogen‐plasma‐treated sample, characteristic of the formation of a plasma‐damaged surface, whereas the methane‐plasma‐treated surface sputtered larger hydrocarbon fragments, which implies the growth of a polymer‐like coating. Scanning tunnelling microscopy measurements of the modified surfaces showed surface features that are attributable to either etching or film growth after exposure to the hydrogen or methane plasma. Copyright © 2009 John Wiley & Sons, Ltd.
XPS and ToF‐SIMS characterization of a Finemet surface: effect of heating
Authors: Chenakin S. P. , Galstyan G. G. , Tolstogouzov A. B. , Kruse N. 
Published: January 2009

AbstractX‐ray photoelectron spectroscopy (XPS) and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) were used to study the surface composition and electronic structure of Finemet, Fe73Si15.8B7.2Cu1Nb3, in the original amorphous state and after gradual heating in vacuum to a temperature of 400 °C and cooling back to room temperature. It was found that relaxation processes occurring during heat treatment well below the crystallization onset caused the physico‐chemical state of Finemet surface to change irreversibly. In the relaxed alloy, the surface originally covered with the native air‐formed oxide was significantly enriched with elemental iron and depleted of other alloy constituents compared with the original state. Yet in the as‐quenched state, clustering of copper atoms on the Finemet surface was detected which was enhanced by heating. The thermal treatment resulted in the selective reduction of iron oxides and caused noticeable changes in the valence band structure and the Fe L3VV Auger spectrum associated with atomic redistribution. Copyright © 2009 John Wiley & Sons, Ltd.
Surface functionalization of multi‐walled carbon nanotubes through surface‐initiated atom transfer radical polymerization of glycidyl methacrylate
Authors: Ryu Jeong , Ramaraj B. , Yoon Kuk Ro 
Published: January 2009

AbstractHerein, we report the fabrication of glycidyl methacrylate (GMA) polymeric conjugates of shortened multi‐walled carbon nanotubes (sMWCNT). The synthesis method involves the attachment of initiator on the surface of nanotubes followed by surface initiated atom transfer radical polymerization (SI‐ATRP) of GMA from the initiator‐bound sMWCNT surface. This is achieved by the procedure consisting of three important steps: introduction of amino groups onto the sMWCNT and attachment of polymerization initiator, 2‐bromo‐2‐methylpropinonyl bromide, and polymerization of GMA. The structure and properties of the resultant polymeric conjugates were characterized by Fourier transform infrared (FT‐IR) spectroscopy, Thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), X‐ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM) and SEM. The FT‐IR analysis of polymeric conjugates shows infrared (IR) peaks characteristic of GMA. AFM, TEM and SEM images clearly show the formation of poly(glycidyl methacrylate)(PGMA) polymer on sMWCNT surface. Copyright © 2009 John Wiley & Sons, Ltd.