bluuebunny/crossref_metadata_2025_split huggingface dataset:
Experimental study of rotational relaxation for D2(1,12) in collisions with N2
Authors: Mao Lin , Liu Jing , Habibulla Nurali , Qiu Yongbao 
Published: April 2024

The rotational relaxation behavior of D2(1,12) in a D2–N2 mixture was investigated using coherent anti-Stokes Raman scattering (CARS) technique. The rovibrational level v = 1 and J = 12 of D2 was selectively excited through stimulated Raman pumping while monitoring the temporal evolution of population for D2(1, J ≤ 12) molecules using time-resolved CARS spectroscopy. The results demonstrate that the rotational relaxation processes of D2(1,12) encompass both multi-quantum relaxation and continuous single-quantum relaxation. When α, the molar ratio of N2, is less than 0.5, D2(1,12) predominantly undergoes a single quantum relaxation process transition. However, when α ≥ 0.5, the multi-quantum relaxation mechanism gradually predominates. The total rotational relaxation rate coefficients of D2(1,12) collisions with N2 and D2 at 295 K were determined to be 3.974 × 10−14 and 1.179 × 10−14 cm3 s−1, respectively. The temperature dependence of rotational relaxation rate of D2(1,12) was investigated within the temperature range of 295–453 K. With increasing temperature, the dominant relaxation process exhibited an accelerated behavior, while the minor relaxation process remained largely unaffected. The rotational temperature of the D2 molecule at various N2 molar ratios was determined through the utilization of Boltzmann plots. The rotational temperature undergoes a rapid decline within 2 μs, corresponding to the near-resonant rotation–vibration relaxation process of D2(1,12) collisions with N2. The system reaches a quasi-equilibrium state when the delay time is 3 μs. The findings of this study can serve as a valuable empirical basis for further validation of the kinetic theory and simulation.
Accurate diabatization based on combined-hyperbolic-inverse-power-representation: 1,2 2A′ states of BeH2+
Authors: Guan Yafu , Chen Qun , Varandas António J. C. 
Published: April 2024

A diabatic potential energy matrix (DPEM) for the two lowest states of BeH2+ has been constructed using the combined-hyperbolic-inverse-power-representation (CHIPR) method. By imposing symmetry constraints on the coefficients of polynomials, the complete nuclear permutation inversion symmetry is correctly preserved in the CHIPR functional form. The symmetrized CHIPR functional form is then used in the diabatization by ansatz procedure. The ab initio energies are reproduced with satisfactory accuracy. In addition, the CHIPR-based DPEM also reproduces the local topology of a conical intersection. Future work will focus on a complete four-state diabatic representation with emphasis on the long-range interactions and spin–orbit couplings, which will enable accurate quantum scattering calculations for the Be+(2P) + H2 → BeH+(X1Σ+) + H(2S) reaction.
La generación ÓSEA
Authors: Guirado Krístel 
Published: April 2024

Abstracta
La etiqueta generación “osea” censura el abuso de la partícula en el habla juvenil e identifica
algunos estilos urbanos: pijos, fresas, sifrinos. En esta investigación, se
estudian los usos modales e interactivos del marcador en una microdiacronía (1977–2006), para confirmar su expansión en el habla
de jóvenes universitarios en Caracas. Además, se estudia posicional y prosódicamente el idiolecto con mayor número de casos. Los
resultados revelan un auge de los usos modales en la década de 1970 y el mantenimiento de las instrucciones apelativas y
epistémicas en el s. XXI. Finalmente, la pronunciación afectada de o sea opera como un índice de jerga de
grupo generacional en el habla de Caracas.
Magnetoelectric effect in a Metglas–langatate ring heterostructure for current sensing
Authors: Fetisov Y K , Chashin D V , Fedulov F A 
Published: April 2024

Abstract
The magnetoelectric (ME) effect was observed and investigated in a planar ring-type heterostructure containing mechanically coupled rings of magnetostrictive amorphous alloy Metglas and a piezoelectric single crystal langatate. The structure was excited by a circumferential ac magnetic field in the presence of a circumferential dc bias magnetic field. Due to the absence of demagnetization and the high acoustic quality factor of the langatate, a high ME field conversion coefficient of α
E ≈ 53 V (Oe cm)−1 was obtained at the frequency 221 kHz of the fundamental radial acoustic resonance mode. The structure can be used as a non-contact ac or dc current sensor. The sensitivity of the structure to the ac current was 1.6 V A−1, whereas for the dc current it reached 4.2 V A−1.
Magnetic enhancement of the electrical asymmetry effect in capacitively coupled plasmas
Authors: Doyle Scott J , Boswell Rod W , Charles Christine , Dedrick James P 
Published: April 2024

Abstract
The development of real-time control strategies for key discharge parameters, such as densities, fluxes, and energy distributions, is of fundamental interest to many plasma sources. Over the last decade, multi-harmonic ‘tailored’ voltage waveforms have been successfully employed to achieve enhanced control of key parameters in a wide range of radio-frequency (RF) plasma sources through application of the electrical asymmetry effect (EAE). More recently, the analogous magnetic asymmetry effect (MAE) has been numerically and experimentally demonstrated to achieve a notable degree of control in parallel plate RF plasma sources. The MAE is achieved via selectively magnetising the charged species adjacent to one electrode, altering the charge flux to the surface and enforcing a DC self-bias to maintain quasineutrality. This study addresses the degree of control achieved by the MAE in a non-planar geometry via 2D fluid/kinetic simulations of a magnetised RF capacitively coupled plasma source employing two different magnetic topologies. The simultaneous application of the EAE and MAE is then presented for the same geometry, demonstrating a degree of non-linear behaviour dependant upon the applied magnetic topology. Control of the DC self-bias voltage

η

dc

is demonstrated for a single

600

V

pp

, 13.56 MHz discharge in both ‘convergent’ (maximum on-axis field strength) and ‘divergent’ (minimum on-axis field strength) magnetic topolgies. MAE induced modulations of

η

dc

=

0.13

V

pp

and

η

dc

=

0.03

V

pp

are achieved for each magnetic topology, respectively, for magnetic field strengths between 50 and 1000 G. Simultaneous application of an EAE and MAE is achieved through a multi-harmonic ‘peak’-type tailored voltage waveform employing varying harmonic phase offsets between

0

∘

⩽

θ

⩽

360

∘

. The degree to which the DC self-bias voltage is modulated by the applied EAE is mediated by the orientation and magnitude of the applied magnetic field. The EAE induced DC self-bias modulations exhibit non-linear behaviour in response to a superimposed MAE, such that the resulting DC self-bias differs from an additive combination of the two effects alone Simultaneous application of the electrical and MAEs offers the possibility of further decoupling ion and electron dynamics in RF plasma sources, and represents an improvement over each approach in isolation.
Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation
Authors: Rasel Md Abu Jafar , Schoell Ryan , Smyth Christopher M , Hattar Khalid , Harris C Thomas , Lu Tzu-Ming , Haque Aman , Wolfe Douglas E , Ren Fan , Pearton Stephen J 
Published: April 2024

Abstract
Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 1012 to 3.76 × 1014 cm2, and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.
Two-dimensional Si2C material exhibits efficient conductive properties and outstanding capacitance characteristics in Li/Na/K-ion batteries
Authors: He Qirui , Shen Yanqing , Zhou Min , Meng Xianghui , Jiang Xiangqian , Pang Long , E Peng , Zhou Zhongxiang 
Published: April 2024

Abstract
To improve the performance of energy storage devices, research into anode materials is essential. This study explores the potential of two-dimensional (2D) materials, particularly silicon carbide (Si2C), to enhance the efficacy of lithium-ion batteries (LIBs), sodium-ion batteries (SIBs), and potassium-ion batteries (KIBs). Our first-principles calculations indicate that Si2C achieves storage capacities of 174.7 mAh g−1 for LIBs, 436.8 mAh g−1 for SIBs, and 349.4 mAh g−1 for KIBs. The exceptional performance of Si2C comes from its high conductivity, large surface area, high capacitance, synergistic atomic radius and electronegativity effects. Furthermore, this study delves into the diffusion kinetics of Li/Na/K-ions in Si2C, revealing extremely low energy barriers and uncovering the fundamental principles behind its superior electrochemical performance. This research emphasizes Si2C’s potential in energy storage, highlighting its capacity and diffusion advantages for Li/Na/K-ion batteries.
Transformer bridge-based metrological unit for scanning thermal microscopy with resistive nanoprobes
Authors: Pruchnik Bartosz , Smagowski Piotr , Badura Dominik , Piasecki Tomasz , Połacik Wiktor , Putek Piotr , Gotszalk Teodor 
Published: April 2024

Abstract
Scanning probe microscopy (SPM) is a broad family of diagnostic methods. Common restraint of SPM is only surficial interaction with specimen, especially troublesome in case of complex volumetric systems, e.g. microbial or microelectronic. Scanning thermal microscopy (SThM) overcomes that constraint, since thermal information is collected from broader space. We present transformer bridge-based setup for resistive nanoprobe-based microscopy. With low-frequency (LF) (approx. 1 kHz) detection signal bridge resolution becomes independent on parasitic capacitances present in the measurement setup. We present characterisation of the setup and metrological description—with resolution of the system 0.6 mK with sensitivity as low as 5 mV K−1. Transformer bridge setup brings galvanic separation, enabling measurements in various environments, pursued for purposes of molecular biology. We present results SThM measurement results of high-thermal contrast sample of carbon fibres in an epoxy resin. Finally, we analyse influence of thermal imaging on topography imaging in terms of information channel capacity. We state that transformer bridge-based SThM system is a fully functional design along with low driving frequencies and resistive thermal nanoprobes by Kelvin Nanotechnology.
Effect of local and global screening current on the current decay in closed-loop HTS coils
Authors: Zhou Pengbo , Zhang Shuai , Wang Ruichen , Li Songlin , Grilli Francesco , Ma Guangtong 
Published: April 2024

Abstract
High-temperature superconducting (HTS) coils are generally operated in a closed-loop persistent current mode, which is crucial for ensuring long-term stability and minimizing heat generation in various applications. However, factors such as joint resistance, flux creep, and losses due to external fields can lead to accelerated decay of the coil’s current, making it challenging to achieve an effective persistent current mode. To gain insight into the current decay characteristics of HTS coils, we built a finite element method based model coupled with a lumped parameter electric circuit model. The model is initially verified against the experiment of an inductive magnetized HTS coil subject to a magnetic field perpendicular to the tape surface. The results indicate that the proposed model is highly effective in predicting the current decay behavior of this magnetized HTS coil and is able to provide high accuracy. With the help of this model, we have experimentally and numerically studied the behavior of a current-carrying closed-loop HTS coil subject to external alternating fields. The HTS coil is charged by a DC power supply and then shorted using a thermally-controlled persistent current switch. The current decay behavior of the HTS coil is examined under various scenarios. The simulation results show excellent agreement with experimental data, further validating the effectiveness and versatility of the modeling strategy. The influence of both local and global screening currents on the current decay performance of the closed-loop HTS coils has been investigated. For every case examined, rapid demagnetization occurred in the initial cycle of the applied alternating field. Furthermore, the current decay rate demonstrated a slight dependence on the frequency of the applied fields. Additionally, the resulting resistance has been thoroughly characterized. These insights contribute to the knowledge of the behavior and performance of closed-loop HTS coils, facilitating their practical application.
Investigation of quasi-particle relaxation in strongly disordered superconductor resonators
Authors: Hu Jie , Matin Jean-Marc , Nicaise Paul , Boussaha Faouzi , Chaumont Christine , Piat Michel , Pham Viet Dung , Bonifacio Piercarlo 
Published: April 2024

Abstract
In this paper, we investigate the quasi-particle (QP) relaxation of strongly disordered superconducting resonators under optical illumination at different bath temperatures with the Rothwarf and Taylor equations and the gap-broadening theory described by the Usadal equation. The analysis is validated with various single-photon responses of titanium nitride (TiN) microwave kinetic inductance detectors under pulsed 405 nm laser illumination. The QP relaxation in TiN is dominated by QPs with energy below the energy gap smeared by the disorder, and its duration is still inversely proportional to the QP density. The QP lifetime versus temperature can be fitted. The relaxation of the resonator can be further modeled with QP diffusion. The fitted QP diffusion coefficient of TiN is significantly smaller than expected. Our result also shows a significant increase in QP generation efficiency as the bath temperature increases.
Near-term distributed quantum computation using mean-field corrections and auxiliary qubits
Authors: McClain Gomez Abigail , Patti Taylor L , Anandkumar Anima , Yelin Susanne F 
Published: April 2024

Abstract
Distributed quantum computation is often proposed to increase the scalability of quantum hardware, as it reduces cooperative noise and requisite connectivity by sharing quantum information between distant quantum devices. However, such exchange of quantum information itself poses unique engineering challenges, requiring high gate fidelity and costly non-local operations. To mitigate this, we propose near-term distributed quantum computing, focusing on approximate approaches that involve limited information transfer and conservative entanglement production. We first devise an approximate distributed computing scheme for the time evolution of quantum systems split across any combination of classical and quantum devices. Our procedure harnesses mean-field corrections and auxiliary qubits to link two or more devices classically, optimally encoding the auxiliary qubits to both minimize short-time evolution error and extend the approximate scheme’s performance to longer evolution times. We then expand the scheme to include limited quantum information transfer through selective qubit shuffling or teleportation, broadening our method’s applicability and boosting its performance. Finally, we build upon these concepts to produce an approximate circuit-cutting technique for the fragmented pre-training of variational quantum algorithms. To characterize our technique, we introduce a non-linear perturbation theory that discerns the critical role of our mean-field corrections in optimization and may be suitable for analyzing other non-linear quantum techniques. This fragmented pre-training is remarkably successful, reducing algorithmic error by orders of magnitude while requiring fewer iterations.
Topologically protected subradiant cavity polaritons through linewidth narrowing enabled by dissipationless edge states
Authors: Lu Yu-Wei , Liu Jing-Feng , Jiang Haoxiang , Liao Zeyang 
Published: April 2024

Abstract
Cavity polaritons derived from strong light–matter interaction provide a basis for efficient manipulation of quantum states via cavity field. Polaritons with narrow linewidth and long lifetime are appealing in applications, such as quantum sensing and storage. Here, we propose a prototypical arrangement to implement a whispering-gallery-mode resonator with one-dimensional topological atom mirror, which allows to boost the lifetime of cavity polaritons over an order of magnitude. This considerable enhancement attributes to the coupling of polaritonic states to dissipationless edge states protected by the topological bandgap of atom mirror that suppresses the leakage of cavity modes. When exceeding the width of Rabi splitting, topological bandgap can further reduce the dissipation from polaritonic states to bulk states, giving arise to subradiant cavity polaritons with extremely sharp linewidth. The resultant Rabi oscillation experiences decay rate lower than the free-space decay of a single quantum emitter. Inheriting from the topologically protected properties of edge states, the subradiance of cavity polaritons can be preserved in disordered atom mirror with moderate perturbations involving the atomic frequency, interaction strengths and location fluctuations. Our work opens up a new paradigm of topology-engineered quantum states with robust quantum coherence for future applications in quantum computing and network.
Remote cross-resonance gate between superconducting fixed-frequency qubits
Authors: Ohfuchi Mari , Sato Shintaro 
Published: April 2024

Abstract
High-fidelity quantum state transfer and remote entanglement between superconducting fixed-frequency qubits have not yet been realized. In this study, we propose an alternative remote cross-resonance gate. Considering multiple modes of a superconducting coaxial cable connecting qubits, we must find conditions under which the cross-resonance gate operates with a certain accuracy even in the presence of qubit frequency shifts due to manufacturing errors. For 0.25- and 0.5 m cables, remote cross-resonance gates with a concurrence of

>

99.9
%

in entanglement generation are obtained even with ±10 MHz frequency shifts. For a 1 m cable with a narrow mode spacing, a concurrence of 99.5% is achieved by reducing the coupling between the qubits and cable. The optimized echoed raised-cosine pulse duration is 150–400 ns, which is similar to the operation time of cross-resonance gates between neighboring qubits on a chip. The dissipation through the cable modes does not considerably affect the obtained results. Such high-precision quantum interconnects pave the way not only for scaling up quantum computer systems but also for nonlocal connections on a chip.
Trusting the minister or trusting the mayor? Perceived competence and integrity of central and local Dutch institutions governing energy matters
Authors: Palomo-Vélez Gonzalo , Perlaviciute Goda , Contzen Nadja , Steg Linda 
Published: April 2024

Abstract
Phasing out fossil fuels is inherent to sustainable energy transitions, but implementing energy policies related to phasing out processes involves risks that may affect their public support. Trust in institutions responsible for handling these risks is crucial for public acceptability, as it serves as a heuristic for risk assessment. In the current study, using the Dutch energy scenario, we examine how trust in institutions relates to public support for phasing out natural gas in the Netherlands. We build from previous research by examining this for the two types of trust most commonly distinguished in the literature, namely competence- and integrity-based trust, and for institutions operating at both national and local levels. Results showed that trust depends on the type of trust people evaluate and on the institution’s level of operation. Locally, institutions are seen as more honest and transparent, while nationally, they’re perceived as more skilled and having more knowledge. Further, integrity-based trust in both local and national institutions better explained public support for phasing out natural gas than competence-based trust. We discuss these results in terms of their implications for energy policy, suggesting policymakers consider trust dynamics and tailor strategies based on trust dimensions and institutional levels to facilitate phasing out processes.
Protonic ceramic electrochemical cells in a metal supported architecture: challenges, status and prospects
Authors: Sata Noriko , Costa Rémi 
Published: April 2024

Abstract
Protonic ceramic cells (PCCs) offer variety of potential applications for electrochemical energy conversion, however a lot of challenges remain in the development of PCCs for industrial scale manufacturing processes. As it was successfully demonstrated for the solid oxide cells, metal supported architecture is a good alternative for PCCs with many attractive advantages in terms of stabilities in operation and reduction of raw critical materials. In this review, proposed architectures, component materials and processing options are summarized. The challenges and prospects are discussed.