bluuebunny/crossref_metadata_2025_split huggingface dataset:
MRI evaluation of pathologically complete response and residual tumors in breast cancer after neoadjuvant chemotherapy
Authors: Chen Jeon Hor , Feig Byon , Agrawal Garima , Yu Hon , Carpenter Philip M. , Mehta Rita S. , Nalcioglu Orhan , Su Min Ying 
Published: November 2007

AbstractBACKGROUND.This study investigated the role of magnetic resonance imaging (MRI) in evaluation of pathologically complete response and residual tumors in patients who were receiving neoadjuvant chemotherapy (NAC) for both positive and negative HER‐2 breast cancer.METHODS.Fifty‐one individuals, comprised of 25 HER‐2 positive and 26 HER‐2 negative patients, were included in the study. Serial MRI studies were acquired before, during, and after NAC. On the basis of the final MRI, response was determined to be a clinically complete response ([CCR], no enhancement), probable CCR (residual enhancement equal to or less than that of glandular tissue), or residual tumor. All patients received surgery. Pathological outcomes were categorized as 1) no residual cancer, 2) no residual invasive cancer but ductal carcinoma in situ (DCIS) present, or 3) residual invasive cancer. The pathologically complete response (pCR) was defined as no invasive cancer.RESULTS.Complete clinical response as seen through MRI, including CCR and probable CCR, was identified in 35 (35 of 51, 69%) patients. MRI correctly diagnosed pCR in 26 (26 of 35, 74%) patients, including 18 of 19 (95%) patients in the HER‐2 positive group and 8 of 16 (50%) patients in the HER‐2 negative group (P < .005). The accuracy of MRI in identifying pCR varied according to the chemotherapy agent that was administered. MRI was more accurate in identifying pCR in patients who were receiving trastuzumab and less accurate in patients receiving bevacizumab. The high false‐negative rate found in HER‐2 negative patients was associated with residual disease that presented as scattered cells or small foci. In cases with residual bulk tumor, the lesion size, determined by MRI, correlated highly with that found in histopathological measurements (r = 0.93).CONCLUSIONS.MRI may predict pCR with high accuracy in HER‐2 positive patients, but it has a high false‐negative rate in HER‐2 negative patients, particularly in patients who are receiving antiangiogenic agents. Results indicate that the chemotherapy agent should be taken into consideration when using MRI to interpret therapeutic outcomes. More studies are needed to establish the role of MRI in managing, especially surgical planning, patients who are receiving NAC. Cancer 2008. © 2007 American Cancer Society.
Cancer in Appalachia, 2001–2003
Authors: Wingo Phyllis A. , Tucker Thomas C. , Jamison Patricia M. , Martin Howard , McLaughlin Colleen , Bayakly Rana , Bolick‐Aldrich Susan , Colsher Pat , Indian Robert , Knight Karen , Neloms Stacey , Wilson Reda , Richards Thomas B. 
Published: November 2007

AbstractBACKGROUND.Researchers have not been able to examine cancer incidence rates in Appalachia because high‐quality data have not been uniformly available across the region. This study is the first to report cancer incidence rates for a large proportion of the Appalachian population and describe the differences in incidence rates between Northern, Central, and Southern Appalachia.METHODS.Forty‐four states and the District of Columbia provided information for the diagnosis years 2001 through 2003 from cancer registries that met high‐quality data criteria. Eleven of 13 states with counties in Appalachia, covering 88% of the Appalachian population, met these criteria; Virginia and Mississippi were included for 2003 only. SEER*Stat was used to calculate age‐adjusted rates per 100,000 population and 95% gamma confidence limits.RESULTS.Overall, cancer incidence rates were higher in Appalachia than in the rest of the US; the rates for lung, colon/rectum, and other tobacco‐related cancers were particularly high. Central Appalachia had the highest rates of lung (men: 143.8; women: 75.2) and cervical cancer (11.2)—higher than the other 2 regions and the rest of the US. Northern Appalachia had the highest rates for prostate, female breast, and selected other sites, and Southern Appalachia had the lowest overall cancer incidence rates.CONCLUSIONS.Cancer incidence rates in Appalachia are higher than in the rest of the US, and they vary substantially between regions. Additional studies are needed to understand how these variations within Appalachia are associated with lifestyle, socioeconomic factors, urban/rural residence, and access to care. Cancer 2008. Published 2007 by the American Cancer Society.
On the applicability of the pseudospectral Legendre method for edge detection
Authors: Ahmad Falih H. , Castellane Ray M. , Miller Ernest L. 
Published: November 2007

AbstractThe pseudospectral Legendre method is utilized to develop a gradient detector. This detector is proposed in this communication for the detection of edges in discrete images. The detector can be applied in both the horizontal and vertical directions. It is a separable detector where the smoothing orthogonal part resembles a one‐dimensional notch filter. Discrete Canny's criteria values of the detector are similar to those of other known basic derivative filters. An example is given in which this detector is utilized and its applicability and validity are supported using comparison results from the use of the Sobel filter. Copyright © 2007 John Wiley & Sons, Ltd.
The Czochralski Method ‐ where we are 90 years after Jan Czochralski’s invention
Authors: Müller G. 
Published: November 2007

AbstractThe Czochralski method, i.e. pulling a crystal from the melt, became the most important technology for the production of large semiconductor (Si, GaAs, InP, GaP …) and optical crystals (oxides, CaF2…). The present status is achieved by a profound analysis of the mechanisms of heat and species transport which are relevant for the stability of the Czochralski growth process and the performance of the growing crystal. It was clearly demonstrated in the last few years that modeling by numerical simulation is an indispensable tool to analyze the Czochralski process and to understand the governing mechanisms. The contribution presents examples of this kind of modeling the Czochralski technique in correlation with experimental investigations in order to illustrate the present status of understanding relevant processing phenomena. Furthermore, it is shown what problems need still to be solved in the future in order to further improve the yield and quality of Czochralski‐grown crystals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bulk growth of gallium nitride: challenges and difficulties
Authors: Bockowski M. 
Published: November 2007

AbstractThe present status of the GaN bulk growth by High Pressure Solution (HPS) method and combination of HPS and Hydride Vapor Phase Epitaxy (HVPE) methods is reviewed. Up to now the spontaneous high pressure solution growth of GaN results in crystals having habit of hexagonal platelets of surface area of 3 cm2 or needles with length up to 1 cm. Recently, the platelets and needles have been used as seeds for the HVPE growth. On the other hand, the LPE technique under pressure with pressure‐grown GaN (hp‐GaN), GaN/sapphire template, patterned GaN/sapphire template and free standing HVPE GaN as seeds has been examined and developed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Growth morphology of crystals from kinetic and geometric perspective
Authors: Prywer J. , Krasiński M. J. 
Published: November 2007

AbstractThe growth morphology of crystals is analysed from macroscopic point of view and the recent developments in this field are surveyed. In particular, it is shown that, for specific geometry characterized by interfacial angles a given face can increase in size for a very wide range of relative growth rates and need not be the slow‐growing face. Even growing faster than the neighbouring faces, such a face can increase in its size. However, there are other faces with other specific geometry, which can decrease the size growing more slowly than one of the neighbouring faces. If the growth time is sufficiently long, such a face may disappear and not be represented in the final crystal morphology. In the present survey the concepts given earlier [5] are extended. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Measurement of specific surface free energy of ruby and quartz single crystals using contact angle of liquids
Authors: Suzuki Takaomi , Sugihara Naoki , Iguchi Eiichi , Teshima Katsuya , Oishi Shuji , Kawasaki Masayuki 
Published: November 2007

AbstractThe specific surface free energy of ruby and quartz single crystal was experimentally obtained using contact angle of water and formamide droplets on the crystal surfaces, and compared with the morphology of each crystal. The ruby crystals satisfied Wulff's relationship even though their shape were not equilibrium form. The specific surface free energies of the growing faces of synthetic quartz crystal, ‐X, +X, Z, and S faces were obtained as 51.9, 55.6, 57.4, and 58.9 mN/m, respectively. The growth rates of these faces were 0.09, 0.23, 0.28, and 0.33 mm/day, respectively. The growth rate of each face of the quartz crystal can be regarded as a function of the experimentally obtained specific surface free energy. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Characterization of in‐plane structures of vapor deposited thin‐films of distyryl‐oligothiophenes by grazing incidence x‐ray diffractometry
Authors: Yoshimoto Noriyuki , Aosawa Keijyu , Taniswa Toshinori , Omote Kazuhiko , Ackermann J. , Videlot‐Ackermann C. , Brisset H. , Fages F. 
Published: November 2007

AbstractThe in‐plane structures of vapor deposited ultrathin films of distyryl‐oligothiophenes (DS‐2T) on SiO2 substrate were characterized by grazing incidence x‐ray diffractometry (GIXD). Two polymorphs, low‐temperature and high‐temperature phases, were identified, and the two dimensional unit cell parameters were determined for each polymorph. The polymorphism depends on substrate temperature and film thickness. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
In situ study of growth and dissolution kinetics of ammonium oxalate monohydrate single crystals from aqueous solutions containing cationic impurities
Authors: Sangwal K. , Wójcik K. , Borc J. 
Published: November 2007

AbstractThe results of an in situ investigation of the effect of four different bi‐ and trivalent cations (Fe(III), Cu(II), Mn(II) and Cr(III)) on the displacement velocity of individual growth steps on the (110) face of ammonium oxalate monohydrate crystals as a function of supersaturation are described and discussed. It was observed that: (1) at a particular temperature of pure solutions and solutions containing impurities, the velocity v of movement of the [110] growth steps is always greater than that of the [111] steps, (2) fluctuations in the velocity of individual growth steps occur in all solutions containing similar concentrations of different impurities, (3) the value of kinetic coefficient β for growth steps decreases with an increase in the concentration ci of Cu(II) impurity, but that for dissolution steps does not depend on ci; moreover, the value of kinetic coefficient β for growth steps is higher than that of dissolution steps, and (4) in the presence of Mn(II) and Cr(III) impurities, the kinetic coefficient β for dissolution steps is several times greater than that for growth steps. The results are explained from the standpoint of Kubota‐Mullin model of adsorption of impurities at kinks in the steps and the stability of dominating complexes present in solutions. Analysis of the results revealed that: (1) the effectiveness of different impurities in inhibiting growth increases in the order: Fe(III), Cu(II), Mn(II), and Cr(III), and this behavior is directly connected with the stability and chemical constitution of dominating complexes in saturated solutions, (2) fluctuations in the velocity of growth steps is associated with the effectiveness of an impurity for adsorption; the stronger the adsorption of an impurity, the higher is the fluctuation in step velocity v, and (3) depending on the nature of the impurity, the kinetic coefficient for the dissolution steps can remain unchanged or can be higher than that of the growth steps. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
3D simulation of the effects of growth parameters on the growth of sapphire crystals using heat exchanger method
Authors: Lu Chung‐Wei , Chi Pei‐Hung 
Published: November 2007

Abstract3D simulations using the commercial CFDRC and FIDAP code, which are based on finite element techniques, were performed to investigate the effects of anisotropic conductivity on the convexity of the melt–crystal interface and the hot spots of sapphire crystal in a heat‐exchanger‐method crystal growth system. The convection boundary conditions of both the energy input to the crucible by the radiation as well as convection inside the furnace and the energy output through the heat exchanger are modeled. The cross‐sectional flow pattern and the shape of the melt–crystal interface are confirmed by comparing the 3‐D modeling results with previous 2D simulation results. In the 3D model, the “hot spots” in the corners of the crucible are donut shaped, and the shape changes with the value of the conductivity of anisotropic crystal. The outline of the crystal becomes more convex as the conductivity in the z direction (ksz) increases. The outline of melt–crystal interface is elliptical when the anisotropic conductivity is moving in the radial direction (ksx and ksy). The portion at the outline touching the bottom of the crucible is smaller than the maximum outline of the crystal, meaning that the shape at the “hot spot”, changes with the value of the conductivities of anisotropic crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Investigation of GaN crystal quality on silicon substrates using GaN/AlN superlattice structures
Authors: Wu Gwo‐Mei , Tsai Chen‐Wen , Chen Nie‐Chuan , Chang Pen‐Hsiu 
Published: November 2007

AbstractThe crystal quality of GaN thin film on silicon using GaN/AlN superlattice structures was investigated. The growth was carried out on Si(111) for GaN(0001) in a metal‐organic vapor phase epitaxy system. Various GaN/AlN superlattice intermediate layers have been designed to decrease the dislocation density. The results showed that the etch pit density could be greatly reduced by one order of magnitude. Cross‐sectional transmission electron microscopy (XTEM) study confirmed the efficiency of GaN/AlN superlattice in blocking threading dislocation propagation in GaN crystal. The design of nine period GaN/AlN (20nm/2nm) superlattice has been evidenced to be effective in reducing the dislocation density and improving the crystal quality. In addition, the dislocation bending in GaN/AlN interface and dislocation merging is investigated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Crystal growth, optical and luminescence properties of (Ce,Sr)‐doped PrAlO3 single crystals
Authors: Novoselov A. , Yoshikawa A. , Solovieva N. , Nikl M. 
Published: November 2007

AbstractUsing the micro‐pulling‐down method, (Ce,Sr)‐doped PrAlO3 square‐shaped single crystals (4×4×12 mm) were grown. Structural parameters studied by X‐ray powder diffraction were consistent with R3m space group. Compositional homogeneity was checked with electron probe micro‐analysis and found quite uniform. Absorption spectra and luminescence characteristics under UV and X‐ray excitations were measured at room temperature with no Ce‐related emission appeared. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Spectroscopic properties of a Tm3+:Bi2TeO5 single crystal
Authors: Dominiak‐Dzik G. , Ryba‐Romanowski W. , Lisiecki R. , Főldvári I. 
Published: November 2007

AbstractSingle crystal of bismuth tellurite Bi2TeO5 (BTO) doped with trivalent thulium (Tm3+) was grown by the Czochralski method and investigated by spectroscopic techniques (absorption, emission). Absorption and emission of the Tm:BTO crystal collected in the VIS‐IR spectral range are presented. Spectroscopic features were investigated as a function of the excitation light polarisation (E//X, Y, and Z axis of optical indicatrix) and sample temperature. The oscillator strength of the 3H6 → 3F4 transition at 1.7 μm was determined by numerical integration of the X, Y and Z polarised absorption spectra. The obtained values are: PX = 4.7 × 10−6, PY = 6.8 × 10−6 and PZ = 5.9 × 10−6 that gives a mean value Pmean = 5.8 × 10−6. Emission was observed from the 1G4 and 3H4 levels. The 3H4 and 1G4 excited state dynamics was studied. Decay curves and time constants of luminescence were collected at 5 and 300 K and analysed. The 3F4 → 3H6 luminescence at around 1.8 μm was too weak to be acquired from the low concentrated sample. However, based on optical data it was possible to estimate the radiative probability Arad of this transition and the 3F4 radiative lifetime. The resultant values are: Arad = 668 ± 0.4 s−1 and τrad = 1.5 ms. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
XPS characterization of YAlO3:Co single crystals
Authors: Talik E. , Kruczek M. , Zarek W. , Kusz J. , Wójcik K. , Sakowska H. , Szyrski W. 
Published: November 2007

AbstractYAlO3:Co (YAP:Co) single crystals have been obtained by the Czochralski method. The XPS spectra of YAP:Co annealed in reducing atmospheres: H2, vacuum and vacuum plus H2 are presented and discussed. As confirmed by magnetic measurements and the electron spectroscopy XPS the dopant concentration of Co is lower than a nominal one. The annealing processes removed colour centers due to relocation and some reduction of oxygen ions in the structure. The increased unit volume during the long annealing process may be caused by the change in some Co3+ ions into Co2+ ions. This explains the occurrence of the violet colour of the longtime annealed samples. The chemical shift analysis shows more ionic bond of Y–O than Al–O. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Physical properties of single crystalline CeNi4.2Mn0.8
Authors: Klimczak M. , Talik E. , Kusz J. , Kowalczyk A. , Toliński T. 
Published: November 2007

AbstractA single crystal CeNi4.2Mn0.8 was grown by the Czochralski method from a levitating melt. The structural, magnetic, electrical transport and electronic structure properties were examined. X‐ray diffraction confirms the hexagonal structure. The f occupancy nf and the coupling Δ between the f level and the conduction states are derived to be about 0.95 and 100 meV, respectively. The X‐ray photoemission spectroscopy shows that Ce ions in CeNi4.2Mn0.8 are in the intermediate valance state. The temperature dependence of resistivity exhibits the metallic character of this compound and reveals a small inflection at 136 K. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
On setting the DC voltage level of an active power filter
Authors: Lo Yu‐Kang , Pan Tian‐Fu , Wang Jian‐Min 
Published: November 2007

AbstractA new strategy for setting the DC voltage level of an active power filter is proposed in this letter. By determining the peak slope of the command for the compensating current within a defined load range, an optimal value for the DC voltage level can be determined based on the trade‐off between an undistorted input current and a minimum switching loss. Experimental results conform well with the theoretical analysis. Copyright © 2007 John Wiley & Sons, Ltd.
The SMN binding protein gemin2 is not involved in motor axon outgrowth
Authors: McWhorter Michelle L. , Boon Kum‐loong , Horan Erin S. , Burghes Arthur H.M. , Beattie Christine E. 
Published: November 2007

AbstractA paramount question in spinal muscular atrophy (SMA) research is why reduced levels of SMN, a ubiquitously expressed protein, leads to a motoneuron‐specific disease. It has been hypothesized that SMN may have a dual function: a role in snRNP assembly and a novel function that affects axons. We have previously shown that decreasing Smn levels in zebrafish causes defects in motor axon outgrowth. To determine whether decreasing other components of the snRNP complex would also cause motor axon defects, we knocked down Gemin2, a SMN binding protein involved in snRNP assembly. Moderate knockdown of Gemin2 yields a large percentage of morphologically abnormal embryos with shortened trunks and overall delayed development. Examination of motor axons revealed that only embryos with abnormal body morphology had aberrant motor axons indicating that the motor axon defects are secondary to the overall body defects observed in these embryos. To directly test this, we knocked down Gemin2 specifically in motoneurons using two separate approaches and found that motor axons developed normally. Furthermore, wild‐type neurons transplanted into morphologically abnormal gemin2 morphants had aberrant motor axons indicating that the motor axon defects observed when Gemin2 is decreased are secondary to the defects in body morphology. These data show that reduction of Gemin2, unlike reduction of SMN, in zebrafish embryos does not directly cause motor axon outgrowth defects. Since Gemin2 and SMN both function in snRNP biogenesis yet only SMN knockdown causes motor axon defects, these data are consistent with an additional role for SMN that is snRNP independent. © 2007 Wiley Periodicals, Inc. Develop Neurobiol, 2008
Effect of astrocyte‐targeted production of IL‐6 on traumatic brain injury and its impact on the cortical transcriptome
Authors: Quintana Albert , Molinero Amalia , Borup Rehannah , Nielsen Finn Cilius , Campbell Iain L. , Penkowa Milena , Hidalgo Juan 
Published: November 2007

AbstractInterleukin‐6 (IL‐6) is one of the key players in the response of the brain cortex to injury. We have described previously that astrocyte‐driven production of IL‐6 (GFAP‐IL6) in transgenic mice, although causing spontaneous neuroinflammation and long term damage, is beneficial after an acute (freeze) injury in the cortex, increasing healing and decreasing oxidative stress and apoptosis. To determine the transcriptional basis for these responses here we analyzed the global gene expression profile of the cortex, at 0 (unlesioned), 1 or 4 days post lesion (dpl), in both GFAP‐IL6 mice and their control littermates. GFAP‐IL6 mice showed an increase in genes associated with the inflammatory response both at 1 dpl (Iftm1, Endod1) and 4 dpl (Gfap, C4b), decreased expression of proapoptotic genes (i.e. Gadd45b, Clic4, p21) as well as reduced expression of genes involved in the control of oxidative stress (Atf4). Furthermore, the presence of IL‐6 altered the expression of genes involved in hemostasis (Vwf), cell migration and proliferation (Cap2), and synaptic activity (Vamp2). All these changes in gene expression could underlie the phenotype of the GFAP‐IL6 mice after injury, but many other possible factors were also identified in this study, highlighting the utility of this approach for deciphering new pathways orchestrated by IL‐6. © 2007 Wiley Periodicals, Inc. Develop Neurobiol, 2008
Gastrulation in the spider Zygiella x‐notata involves three distinct phases of cell internalization
Authors: Chaw R. Crystal , Vance Emily , Black Steven D. 
Published: November 2007

AbstractThe cell movements of gastrulation were analyzed in embryos of the spider Zygiella x‐notata, using time‐lapse video, cell tracing, and improved histology. Cells are internalized near the center of the germ disc in three distinct phases. First, cumulus mesenchyme cells ingress and migrate as a group beneath the superficial layer. Second, mass internalization through a blastopore yields a diffusely organized deep layer. Third, superficial cells accumulate at the center of the germ disc to form the caudal bud. The floor is internalized, and the caudal bud moves over the nascent dorsal field to form the caudal lobe. This pattern of gastrulation differs from the canonical pattern described in the historical literature: (1) the cumulus of Z. x‐notata is completely formed before any other cells internalize; and (2) the caudal lobe is formed by means of the caudal bud, which is a locus of cell internalization. Developmental Dynamics 236:3484–3495, 2007. © 2007 Wiley‐Liss, Inc.