bluuebunny/crossref_metadata_2025_split huggingface dataset:
13.4: A 20.8‐inch WXGA Full Color AMOLED Display by Integrating Scattering Reflector with Micro‐Bumps
Authors: Okutani Satoshi , Kamiura Norihiko , Sano Hiroshi , Sawatani Takumi , Fujita Daisuke , Takehara Toshifumi , Sunohara Kazuyuki , Kobayashi Michiya , Ibaraki Nobuki 
Published: August 2007

AbstractIn order to improve light extraction efficiency from organic light emitting diodes (OLED), we report a novel structure of top‐emission OLED by integrating a scattering reflector with micro‐bumps into the substrate. The mechanism of light extraction has been investigated by evaluating the dependency of flux on the shape of the micro‐bumps. It was confirmed that the scattering effect of the micro‐bumps improves the light extraction of OLED. Moreover, the scattering reflector has been applied on a 20.8‐inch WXGA full color AMOLED display. This is the world's first report that actually proves a light extraction technology, integrating scattering reflector, applied on AMOLED display.
P‐3: Laser Assisted ITO Lift‐off for TFT Fabrication
Authors: Fang Kuo‐Lung , Huang Ming‐Yuan , Yang Chih‐Chun , Liao Chin‐Yueh , Jan Shiun‐Chang , Lin Han‐Tu , Chen Chien‐Hung , Gan Feng‐Yuan 
Published: August 2007

AbstractExcimer laser is used for back channel etched (BCE) a‐Si TFT fabrication for the first time. KrF laser could easily and successfully lift‐off ITO on photo‐resist comparing to traditional chemical lift‐off process. Besides, this maskless laser lift‐off technology could save much process time from mask alignment step. The mechanism of laser assisted ITO lift‐off (LAIL) technology was carefully studied in this paper. with suitable laser fluence energy, ITO could be precisely patterned as designed. Very wide range of laser fluence energy was obtained in our LAIL technology. TFT device fabricated by LAIL technology exhibits the same electrical characteristics performance as traditional non‐lift‐off one.
P‐5: Solution‐Processed SiO2 Films Using Hydrogenated Polysilane Based Liquid Materials
Authors: Tanaka Hideki , Aoki Takashi , Yudasaka Ichio , Shimoda Tatsuya , Furusawa Masahiro , Iwasawa Haruo , Wang Daohai , Matsuki Yasuo 
Published: August 2007

AbstractPolycrystalline silicon thin‐film transistors (poly‐Si TFTs) have been fabricated using solution‐processed SiO2 films made from a polysilane‐based liquid precursor. Spin‐coating this precursor, which already had been reported as a precursor for silicon film [Nature, vol. 440, pp. 783–786, 2006], we have prepared gate silicon oxide films for the TFTs. The fabricated TFT has been operated with the mobility of 108.9 cm2/Vs and sufficient low gate leakage current.
P‐7: 4 Inch a‐Si TFT‐LCD with an Embedded Color Image Scanner
Authors: Yu Jun‐Hyeok , Choo KyoSeop , Kang HeeKwang , Kim YeonSun , Lee DeukSU , Kang InByeong , Chung InJae 
Published: August 2007

AbstractWe developed a 4 inch (QVGA, 320×240, 262,144 colors) amorphous silicon thin‐film transistor liquid‐crystal display (TFT‐LCD) with an embedded color image scanner. with this panel, it is possible to get a copy of photo or document and to display it on the screen itself. The sensing device and display device are fabricated by the conventional a‐Si processes at the same time. We focused on making the thinner panel to get better quality of image obtained from scanning.
P‐8: a‐Si:H TFT‐LCD with Single Organic Passivation Layer
Authors: Kim Young‐il , Choi Jae‐Beom , Jin Seong‐Hyun , Choi Yoon‐Seok , Kim Jong‐An , Seo Hyun‐Sik , Lee Jae‐Hyung , Jung Bae‐Hyeun , Kang Ho‐Min , Kim Dae‐Kwang , Min Hoon‐Kee , Kim Chi‐Woo 
Published: August 2007

AbstractA novel photosensitive organic material is used as the single organic passivation layer for the conventional back channel etched thin film transistors. We find that the leakage current of the a‐Si:H TFTs with single organic passivation layer is lower than that of the conventional transistors with silicon nitride passivation layers and the adhesion strength between the organic layers and the pixel electrode is sufficiently strong so that the overlap between the ITO pixel electrode and the data lines can be formed. Using the novel materials, 1.9″ qCIF AMLCD with single organic passivation layer was successfully fabricated with reduced process steps.
P‐9: Unified Model and Prediction Technique for On‐Current Degradation Caused by Drain‐Avalanche Hot Carriers in Low‐Temperature Poly‐Silicon Thin‐Film Transistors
Authors: Kawamura Tetsufumi , Matsumura Mieko , Hatano Mutsuko , Kaitoh Takuo , Noda Takeshi , Miyazawa Toshio , Ohkura Makoto 
Published: August 2007

AbstractA unified model and a prediction technique for on‐current degradation in NMOS low‐temperature poly‐Silicon thin‐film transistors are presented. The resistance increase is expressed as a function of the stress‐drain current and stress‐drain voltage. This function is independent of the size, crystallinity, or initial characterization of the transistors. The turnaround time for circuit design can be shortened by using this technique.
P‐10: Transparent OTFTs with Color Filtering Functional Gate Insulators
Authors: Chuang Chiao‐Shun , Tsai Shu‐Ting , Lin Yung‐Sheng , Cheng Jung‐An , Chen Fang‐Chung , Shieh Han‐Ping D. 
Published: August 2007

AbstractTransparent organic thin‐film transistors (OTFTs) impregnated with nanoparticles, organic dyes and pigments in the dielectric insulators were fabricated and analyzed. The colored composite insulators were utilized as the color filter and the dielectric layer of the OTFTs simultaneously to obtain the desired color. It was found that the performance of the OTFTs with the above mentioned composite dielectric layers possess color filtering comparable to the conventional devices. In addition, light sensitivity of OTFTs was significantly reduced.
P‐11: Analysis of Low Power Consumption AMOLED Displays on Flexible Stainless Steel Substrates
Authors: Hack Mike , Hewitt Richard , Brown Julie J. , Choi Jae Won , Cheon Jun Hyuk , Kim Se Hwan , Jang Jin 
Published: August 2007

AbstractWe present simulations and results to demonstrate the viability of metal foil as a substrate for low power consumption, flexible AMOLED displays. We show that using organic planarization layers, very smooth surface properties can be achieved resulting in excellent TFT performance, and that capacitive coupling effects only have a minimal impact on power consumption, and a small impact on gate line delays. We demonstrate that using phosphorescent OLEDs it is possible to design low power consumption 40″ AMOLED displays.
P‐13: Low‐Power a‐Si Level Shifter for Mobile Displays with Bootstrapped Capacitor and Pulsed Signal Source
Authors: Lee Won‐Kyu , Lee Jae‐Hoon , Park Hyun‐Sang , Lee Woo‐Cheul , Jung Young‐Bae , Han Min‐Koo 
Published: August 2007

AbstractA new low power consumption amorphous silicon (a‐Si:H) TFT level shifter is designed and verified by SPICE simulation. The a‐Si:H TFT level shifter employing cascade inverters successfully shifts low voltage (5 V) to high voltage (23 V) by employing a bootstrapping method. Proposed a‐Si:H TFT level shifter has considerably reduced the power consumption by 50% compared with the conventional one (8.03 mW) due to connection of clock pulse on the diode connected node and bootstrapping method. The proposed level shifter may be suitable for mobile display applications.
P‐15: AMOLED Pixel Structures Compensating the Hysteresis of Poly‐Si TFTs
Authors: Jung Myoung‐Hoon , Choi Inho , Kim Ohyun , Chung Hoon‐Ju 
Published: August 2007

AbstractNew voltage programmed pixel circuits for AMOLEDs are proposed and measured. The measurement data indicate that the proposed driving schemes are less sensitive to the hysteresis of low temperature polycrystalline silicon (LTPS) TFTs than the conventional 2T1C pixel structure and can improve the recoverable residual image due to the hysteresis characteristics of LTPS TFTs. In the proposed driving schemes, the black data are inserted in displayed images so that the motion image quality should be improved.
P‐17: Metal Induced Continuous Zonal Domain Polycrystalline Silicon and Thin Film Transistors
Authors: Zhao Shuyun , Meng Zhiguo , Li Xuedong , Zhang Bo , Liu Zhaojun , Wong Man , Kwok Hoi‐Sing 
Published: August 2007

AbstractMetal induced polycrystalline silicon (poly‐Si) films composing of continuous zonal domain (CZD) in exactly same width have been obtained through pre‐defined crystalline nucleation lines (CNL) on a nano‐layer of silicon dioxide. Employing this technology, the impact of glass substrate shrinking on subsequent alignment process is determined. Additionally, the crystallization process is strictly controllable and the annealing time is shorter than one hour. P‐channel thin film transistors (TFTs) built on CZD poly‐Si exhibit high performance and high uniformity.
P‐18: Improvement of Stability in ZnO TFT Under Bias Stress
Authors: Hwang Chi‐Sun , Park Sang‐Hee Ko , Lee Jeong‐Ik , Chung Sung Mook , Yang Yong Suk , Do Lee‐Mi , Chu Hye Yong 
Published: August 2007

AbstractThe stability of ZnO TFT under bias stress was investigated. Transparent ZnO thin films deposited by means of atomic layer deposition(ALD) and plasma enhanced atomic layer deposition(PEALD) at 100 °C were used as the active channel. The TFT with PEALD grown ZnO layer has better stability under bias stress than the TFT with ALD grown ZnO layer.
P‐20: High Integrated 10.2‐inch WVGA LTPS LCD Manufactured by PMOS Process
Authors: Yang Shu‐Hun , Chen Wei‐Cheng , Lin Hsiao‐Yi , Lee Ching‐Hone , Lai Vincent , Chiu Chaung‐Ming , Wang Hung‐Chi , Lee Chun‐Chi 
Published: August 2007

AbstractA high integrated 10.2‐inch WVGA LTPS LCDs with single‐chip ASIC and manufactured by PMOS process was developed. Level shifters, DC‐DC converters for gate driver with 2‐phase shift registers and forward/reverse scanning function and 1:6 demultiplexer for source driver were integrated on the glass. The ASIC includes timing controller and 400‐channel source driver. This architecture dramatically reduces cost with high mechanical robustness. Furthermore, the 6‐Mask PMOS process also improves the throughput and reduces yield loss in manufacturing due to less photo layers than CMOS one, especially for large panel size. Therefore, this 10.2‐inch panel is remarkable for high integration of PMOS LTPS design and the cost reduction
P‐21: Jet‐Printed All‐Additive Active‐Matrix Pixel Circuits on Low‐Temperature Flexible Substrates
Authors: Daniel Jurgen , Arias Ana Claudia , Ready Steve , Krusor Brent , Street Robert 
Published: August 2007

AbstractFlexible active‐matrix pixel circuits were fabricated in an all‐additive method using solution‐ processed materials and ink jet‐printing. The prototype TFT arrays with 50×50 pixels (680μm pixel pitch) are based on polymeric semiconductor, a polymeric gate dielectric and metal nanoparticle conductors maintaining the maximum process temperature below 200°C. The measured TFT and pixel performance is promising for paper‐like displays.
P‐23: Design Parameters for Using Charging Technique for TFT‐LCDs
Authors: Kim Do‐Sung , Lee Won‐Ho , Lee Jun‐Yeop , Lee Sang‐Yeop , Jung Sung‐Hun , Yoon Dong‐Jun , Choi Byung‐Jin , Song Hong‐Sung , Oh Jin‐Woo , Lee Gue‐Tai , Oh Chang‐Ho , Kang In‐Byeong 
Published: August 2007

AbstractIn case of charging a large capacitor in a short time, We use a well‐known pre charging technique(1), which is a method of charging a pixel two times at an interval of one gate pulse width. But there is a side effect of a pattern looking like out of focus. This phenomenon is caused directly by a different quantity of charging being introduced into two pixels which are two pixels apart vertically with each other. To remove this side efeect, we optimize the charging design parameter; Cst+Clc, Ion condition from TFT device. with the pre charging technique, A 120Hz 32″ WXGA TFT‐LCD which has three times of Cst + Clc as compared to conventional IPS structure has been developed.
P‐24: Design of Low‐Cost 2.2‐inch qVGA LTPS TFT‐LCD Panel
Authors: Shin Min‐Seok , Choi Jung‐Whan , Kim Yong‐Jae , Kim Kyong‐Rok , Lee Inhwan , Kwon Oh‐Kyong , Kim Cheol‐Min , Park Joon‐Ha , Kim Il‐Gon , Kim Chi‐Woo 
Published: August 2007

AbstractIn this paper, 2.2‐inch qVGA LTPS(Low Temperature Poly‐Si) TFT‐LCD panel driven by external output buffers is proposed to reduce the display system cost. The LTPS panel with external output buffers improves the yield because only the digital functions are integrated on the LTPS panel. This also achieves a small number of interconnection lines between external IC and the LTPS panel. Finally, display system cost can be reduced by lowering the cost of flexible PCBs(Printed Circuit Boards). Moreover, the proposed panel adopts 1:6 de‐multiplexing scheme for decreasing the height of the source driver circuitries. Compared with the conventional structure of 1:3 de‐multiplexing scheme, the height of the source driver area is reduced as much as 40%.
P‐25: Accurate Power Estimation of LCD Panels or Notebook PC Applications
Authors: Hwang Injae , Kang Seungjae , Moh Sangmoon , Park Wooil , Kim Wanbae 
Published: August 2007

AbstractThis paper describes a power estimation method to optimize the design of LCD panels for low power notebook PC applications. Power consumption of an arbitrary pattern is accurately estimated using power data measured for solid gray patterns in advance. for a 1‐dot checker pattern, the difference between estimated and measured power consumption is less than 5mW with a 3.3V supply.
P‐194L: Late‐News Poster: High‐Frequency Performance of Sub‐Micrometer Channel‐Length Si TFTs Fabricated on Large Grain Poly‐Si Films
Authors: Kawachi Genshiro , Mitani Masahiro , Okada Takashi , Tsuboi Shinzo 
Published: August 2007

AbstractHigh‐frequency characteristics of sub‐micron Si TFTs fabricated on large‐grain poly‐Si films are demonstrated for the first time. A cutoff frequency (fT) of 6 GHz and a maximum oscillation frequency (fmax) of 25 GHz were obtained for the TFT with a channel length of 0.5 μm. It was confirmed that use of insulating substrates is advantageous to reduce the parasitic susceptance due to a conductive substrate, thereby increasing fmax.
P‐197L: Late‐News Poster: Demonstration of High Performance TFTs on Silicon‐on‐Glass (SiOG) Substrate
Authors: Manley Robert G. , Fenger Germain , Hirschman Karl D. , Couillard J. Gregory , Williams Carlo Kosik , Dawson‐Elli David , Cites Jeffrey 
Published: August 2007

AbstractThis report is an introduction to a new silicon‐on‐glass (SiOG) substrate and device technology. The fabrication and analysis of CMOS devices fabricated using SiOG are presented. The SiOG devices are comparable to those fabricated on SOI wafers with respect to carrier mobility and off‐state leakage current. This technology clearly demonstrates the potential for system‐on‐panel integration.
P‐198L: Late‐News Poster: Integrated Ambient Light Sensor in LTPS AMLCDs
Authors: Matsuki Fumirou , Hashimoto Kazuyuki , Sano Keiichi , Yeates David , Ayres J. Richard , Edwards Martin , Steer Andrew 
Published: August 2007

AbstractSensing ambient light in mobile applications allows reduced power consumption through backlight control. Integration of light sensors reduces module complexity and location of the sensors close to the pixel array simplifies integration in products. We describe an integrated ambient light sensor consisting of lateral pin diodes and digital read out circuit.
P‐199L:Late‐News Poster: Silicon Nanocrystals Photo Sensor Integrated on Low‐Temperature Polycrystalline‐Silicon Panels
Authors: Chiang Wen‐Jen , Chen Chih‐Yang , Lin Chrong‐Jung , King Ya‐Chin , Cho An‐Thung , Peng Chia‐Tien , Chao Chih‐Wei , Lin Kun‐Chih , Gan Feng‐Yuan 
Published: August 2007

AbstractA photo‐detector using silicon nanocrystal layer sandwiched between two electrodes is first time proposed and demonstrated for photo‐sensing application on LTPS panels. Through post‐annealing of silicon rich oxide films, Si nanocrystals can be formed with good uniformity and high temperature tolerance to respond best to certain absorption spectrum of the corresponding light source. These silicon nanocrystals, less than 10nm in diameter, exhibit better quantum confinement effect, which promote electron‐hole pair generation in photo‐sensing region as a result of its direct bandgap. In addition to obtaining photo sensitivity superior to that of a P‐I‐N diode currently used in LTPS technology, the new sensor can maximize the fill factor in a pixel circuit by adapting a stacked structure.
P‐30: Accommodation Depth in 3‐D Display System Using Two Stereoscopic Displays at Different Depths
Authors: Uehira Kazutake , Suzuki Masahiro , Shimizu Marie 
Published: August 2007

AbstractThis paper describes a display system that creates a 3‐D image by overlapping two identical 3‐D images displayed by two stereoscopic displays at different depths. Both images were displayed so that observers perceived them at the same depth and could see them fused into one image. We measured the accommodation depth of the observers' eyes when they saw the fused image. We found that the accommodation depths when they saw the fused images differed from that when either of the stereoscopic displays presented a single image by itself. This accommodation depth for fused image was between them. These results indicate that the accommodation depth was determined by the reciprocal effect of the two displays. This indicates the possibility that this display system can provide stereoscopic views without there being any contradictions between accommodation depth and perceived depth for 3‐D images.
P‐32: LED Backlight System for Medical Imaging on LCD Monitors
Authors: Casale Carlo , de Monte Denis , Albani Luigi , Bonfiglio Silvio 
Published: August 2007

AbstractNowadays products with LED backlight are entering the consumer and semi‐professional markets where wide color gamut is essential. In this paper a new LED backlight solution suitable for medical imaging application will be described where the requirements are mainly related to luminance and color accuracy and white point tuning.
P‐33: Driving Schemes for LED Backlighting Large‐area LCD Displays
Authors: Masood Ahmed 
Published: August 2007

AbstractThis paper compares leading LED‐driver architectures for backlighting large‐area LCD televisions. Design and cost considerations are discussed for linear, boost, and buck‐based LED drivers. We identify the strengths and weaknesses of each architecture, and recommend the type of application for which each is best suited.
P‐36: Equating Simulated and Real‐World Imagery Using a Target Identification Criterion
Authors: Geri George A. , Akhtar Shama C. , Eidman Craig , Pierce Byron J. 
Published: August 2007

AbstractAir‐to‐ground target identification was used to select simulated target characteristics that resulted in performance similar to that found in real‐world tasks. for a wide variety of ground target‐vehicles, it was found that simulated‐target identification levels could be matched to any desired real‐world level by making visually realistic modifications to target contrast.
P‐37: Just Noticeable Difference of Image Attributes for Natural Images
Authors: Qin Shaoling , Ge Shu , Yin HanChun , Xia Jun , Liu Lu , Teunissen Kees , Heynderickx Ingrid 
Published: August 2007

AbstractTo model the relative importance of the image quality attributes white level, black level, color saturation and contour rendering, they need to be varied all to a perceptually equal extent. The just noticeable difference (JND) of each attribute can be used for this. These JNDs are well known for specific test patterns, but not for natural image content. In this paper, we describe several experiments to determine the relationship between the JNDs and the averaged image characteristics.
P‐38: Comparison of the Odiousness by Various False Colour Motion Blurs in LCDs Caused by Various Factors
Authors: Hisatake Yuzo , Ito Hideki , Obi Masaki , Kawata Yasushi , Murayama Akio 
Published: August 2007

AbstractWe have evaluated the odiousness by various false colour motion blurs in LCDs with respect to each factor to generate the blur. In the case of different colour hue blur, we found that the optimal and allowance levels of odiousness can be expressed by the average of PBET value.
P‐42: A 10 bit Gray Scale Digital‐to‐Analog Converter with an Interpolating Buffer Amplifier for AMLCD Column Drivers
Authors: Lee Hyung‐Min , Son Young‐Suk , Jeon Yong‐Joon , Jeon Jin‐Yong , Lee Geon‐Ho , Jung Seung‐Chul , Cho Gyu‐Hyeong 
Published: August 2007

AbstractA 10 bit digital‐to‐analog converter (DAC) with an interpolating buffer amplifier is proposed for AMLCD column drivers. The proposed circuit is more effective than a conventional circuit in decreasing the DAC (Pass‐Transistor Logic) area per channel. The average static current per channel is 1.8 μA and the average interpolating error rate in most of the gray range is a sufficiently small rate of 2.5 % (and less than 0.5 % in the mid‐gray range). The uniformity of the channel output is also guaranteed by the proposed error‐reduction technique.
P‐43: A Multi‐Chip Reference Current Generating Circuit for Current‐Mode Column Driver ICs
Authors: Jeon Jin‐Yong , Son Young‐Suk , Jeon Yong‐Joon , Lee Geon‐Ho , Lee Hyung‐Min , Jung Seung‐Chul , Cho Gyu‐Hyeong 
Published: August 2007

AbstractA reference current generating circuit is proposed for current‐mode displays using plural column driver ICs. The circuit supplies the uniform current with the column drivers. The cascaded circuits use an input reference current, sense it, and independently generate output currents in accordance with the current. The variation of generated output current in the reference current generating circuit of each column driver IC is reduced as compared with the conventional method. The generated output currents in column drivers have 0.1% error to the input reference current.
P‐46: FRC Frame Dispersion Reducing Frame Pattern of MLA Drive System
Authors: Sako Norimitsu , Sasama Hiroshi , Kitayama Hideyuki , Fukasawa Hideaki , Kotaki Kouichi 
Published: August 2007

AbstractWhen a same halftone is displayed in all pixels of STN‐LCD panel, undesirable frame pattern is seen in a MLA drive system. It is seen momentarily by some synchronization between shaken panel and display cycle. In other case, it is seen at momentary of change when the display is blinking. We solved these frame patterns by dispersing the frames of turning on and off, and by minimizing a effective voltage difference between pixels.
P‐50: The Impact of Thermal Stress, Mechanical Stress and Environment on Dimensional Reproducibility of Polyester Film During Flexible Electronics Processing
Authors: MacDonald William A. , Eveson Robert , MacKerron Duncan , Adam Raymond , Rollins Keith , Rustin Robert , Looney M. Kieran , Stewart John , Hashimoto Katsuyuki 
Published: August 2007

AbstractDuPont Teijin Films™ (DTF) have developed engineered substrates specifically for the flexible electronics market. Teonex ®Q65 and Melinex ST506/504 are biaxially oriented crystalline polyesters with the option of planarised surfaces are emerging as competitive materials for the base substrate in OLED displays and active matrix backplanes. Given the demanding dimensional reproducibility requirements in the display applications, it is critical to control the several factors that can influence the film distortion to achieve the ultimate performance that can be achieved with the base substrate. This paper will discuss the impact of thermal stress, mechanical stress and the processing environment on dimensional reproducibility of polyester film and give examples of how this impacts on the film in device manufacture.