bluuebunny/crossref_metadata_2025_split huggingface dataset:
Reliability Compliance Testing of Electronic Components for Consumer Electronics
Authors: Przybyl E. , Peciakowski E. 
Published: June 2007

In this paper the organisation of reliability compliance testing of electronic components in Poland is discussed. The aim of the testing is to find the reliability of the components to both producer and user and hence to establish reliability for the two parties. The system described is derived from standard methods and has two aims. These are:‐1) To enable periodical checks of production to be made.2) To estimate the reliability level of the components produced.Sampling plans are constructed on the basis of Weibull distributions. Individual life tests are performed to compare the reliability levels with those in the specification, and also to enable data to be accumulated for calculation of average failure rates. These tests are supervised by the quality centre UNITRA‐ELECTRON. The centre is then in a position to provide reliability data on electronic components for the designers and producers of electronic equipment.The system of reliability compliance testing given in the paper will be effective if the tests are
performed frequently. The aim is also to achieve results in the shortest possible time. In order to achieve these aims accelerated life testing has been investigated.Applicability of techniques, including that of accelerated life testing, to the study of reliability of
polyester capacitors is examined.
Expression de la Tension Photovoltaïque Induite parTransition Interbande Dans des Couches Minces de Sulfure de Zinc
Authors: Tosser A. , Murray H. 
Published: June 2007

En considérant les variations dimensionnelles de la tension photovoltaïque induite en circuit ouvert par des
rayonnements lumineux d′énergie supérieure à 3,66 eV dans des structures sandwich Al/ZnS/Au, ainsi que les
variations avec le flux lumineux du courant de court‐circuit et de la conductance correspondant à la phototransition entre bandes, l′hypothèse d′une quasi‐bande de conduction créée par l′ionisation de centres coulombiens est
avancée. Elle conduit à une formulation de la tension photovoltaïque en bonne cohérence avec l′expérience.Variations with thickness of open‐circuit voltage, short‐circuit current and photoconductance associated to
interband transition lead to postulate the existence of a quasi‐conduction band, associated with ionized coulombic
centres, in Al/ZnS/Au illuminated (photon energy > 3,66 eV) sandwich structures. An expression of open‐circuit
voltage is deduced, in good agreement with experimental data.
Couches Conductrices et Transparentes Obtenues par Pulverisation d′une Cible de SnO2
Authors: Launey J. , Tosser A. 
Published: June 2007

SnO2 is reactively r.f. sputtered to obtain conductive thin films of good optical transmission. Data about thermal ageing in vacuum, thermal evolution of conductivity, spontaneous ageing in air and optical transmission show how it is possible to obtain a transmission of 80% in visible light with resistance square below 1 kΩ/sq; the possibility of a multiple‐step process of sputtering is presented. A “nucleation‐growth” model allows an explanation of the observed phenomena.La pulvérisation haute‐fréquence d′une cible de SnO2 en présence d′argon et d′oxygène permet d′obtenir des couches minces conductrices de bonne transparence optique. A partir des phénomènes de recuit sous vide, d′évolution de la résistance avec la température, du vieillissement spontané à l′air et de la variation de la transparence optique, il est possible de déterminer la méthode permettant d′obtenir un facteur de transmission de
80% en lumière visible et une résistance carrée inférieure à 1 kΩ/sq; l′intérêt d′une pulvérisation fractionnée est explicité. Le modèle de “germination‐croissance” permet une description convenable des phénomènes observés.
The Direct Bonding of Metals to Ceramics and Application in Electronics
Authors: Burgess J. F. , Neugebauer C. A. , Flanagan G. , Moore R. E. 
Published: June 2007

The direct bonding of metals to ceramics is possible utilizing a gas metal eutectic. The mechanism of direct bonding of copper foil to ceramics in a slightly oxidizing atmosphere is presented. It involves the formation of eutectic melt between copper and oxygen at a temperature slightly below the melting point of copper, which serves to bring the foil into intimate contact with the substrate. Metals to which technique is applicable include Cu, Fe, Ni, Co, Ag, Cr, Mo and Al. A brief review of other metal–ceramic bonding techniques is given for comparison.The process for fabricating direct bonded copper structures is given, and properties of the bond are discussed.
The use of the directed bonding process in a number of electronic applications such as hybrid packages and power
device heat sinks is indicated.
Biaxial Strain Effects on Optical Characteristics of Quantum Well Lasers
Authors: Hsu J. S. , Lee Ming Rong , Yarn K. F. 
Published: June 2007

The effects of biaxial strain produced by the lattice mismatch of constituent materials on
the optical properties of strained In1−xGaxAsyP1−y/In1−xGaxAs quantum well lasers
are investigated.The optical gain and refractive index change of a biaxially stressed quantum well lasers
are studied theoretically using the multiband effective mass equation (i.e., method),
deformation potential theory and Fermi‐Golden rule, band mixing effect is retained in
the calculations. It is found that the biaxial strain would change the subband structures
and optical properties of quantum well lasers, we found the gain of TE mode increases
with increasing compressive strain, while the gain of TM mode increases with increasing
tensile strain, these will be benefited for reducing the threshold current depending on
whether the quantum well lasers are operating in TE or TM mode. On the other hand,
the refractive index change in the active region near the TE(TM) mode peak gain
becomes more negative when a biaxial compressive(tensile) strain is applied, it leads
to the conclusion that the strain weakens the optical confinement, the temperature
dependence of gain also becomes stronger when there is strain.Finally, we also found the minimum peak gain occurs when a small tensile strain is
applied, but no strain.
Conduction Processes in Thick Film Resistors. Part II
Authors: Ansell M. P. 
Published: June 2007

The structures of three families of thick film resistors have been investigated by scanning electron microscopy and electron probe micro‐analysis. The two principal components of the resistive glazes, that is the conducting pigment and the glassy binder, have been identified in each case. The pigments were found to be simple or ternary oxides of the Pt transition metal group and Pd/PdO/Ag alloys. The glassy binders were based on lead borosilicate glasses.A model for the electronic conduction processes through the glass and pigments is proposed on the basis of the observed physical structures, the measured electrical properties of resistors and the properties of the component resistor materials.Part I of the total paper is concerned with identifying the phases in various thick film resistors and part II considers the conduction processes that are applicable.
Adhesion Measurement of Thin Films
Authors: Mittal K. L. 
Published: June 2007

A critical and comprehensive review of the various methods for the measurement of adhesion of thin films is presented. Emphasis has been placed on the techniques used for thin films (<1μm) but consideration has also been extended to methods which have proved successful in case of relatively thicker coatings and are potentially applicable in the study of thin films. Most of the methods catalogued in this review have been harnessed in measuring the adhesion of thin evaporated or sputtered metallic films on an assortment of substrates; the literature references to the study of thin polymeric films are extremely meager.The methods of determination of adhesion are discussed under three headings: Nucleation Methods, Mechanical Methods and Miscellaneous Techniques. Furthermore, the mechanical methods are categorized depending upon the mode of application of the force to disrupt the interface. Although the emphasis is on the quantitative methods of measuring adhesion, but for completeness qualitative as well as the methods which are still in a state of infancy have been included.Requirements for the ideal adhesion test are outlined and, apparently, there does not exist any test which fulfils all the virtues. Many of the techniques may not provide absolute quantitative values of adhesion strength but these can profitably be used to follow relative changes in adhesion strength due to process variables, ageing weathering, etc.The principle, merits, potentialities, and limitations of each technique are outlined, and the difficulties associated with measuring adhesion strengths and their relationship to “basic adhesion” are discussed.
Electrical Conduction by Percolation in Thick Film Resistors
Authors: Forlani F. , Prudenziati M. 
Published: June 2007

Thick film resistors are widely used in microelectronic devices, however the mechanism of electrical conduction in these resistors has not yet been fully understood. In particular the anomalous behaviour of the temperature coefficient of resistance (T.C.R.) vs. temperature for a purely ohmic resistor has not been explained. The anomaly is that the T.C.R. is negative at low temperatures, is zero around room temperature and becomes positive at higher temperatures.This paper demonstrates that the electrical conduction mechanism in thick film resistors can be described by the electron percolation theory already proposed to explain charge transport in amorphous semiconductors.
The thick film structure consists of conductive grains with a diameter of 0.1 μm
to 0.3 μm separated by dielectric layers. Some of the conductive grains make contact through
dielectric layers so thin that electrons are able to tunnel through the layers. The critical percolation path is through
these grains. Experimental evidence is given which confirms that the resistance vs. temperature characteristics
satisfactorily fit the conduction equation provided by the percolation theory.The T.C.R. anomaly can be explained in the framework of this theory. The decay length of the electron wave‐function
is shown to be lower than 370 Å for a density of conductive grains in the film in the order
of 1015 cm−3. Such a value is consistent with electron tunnelling through layers
about 100 Å thick.
Characterization of Thick Film Capicitors
Authors: Leroy Y. , Descamps M. , Vernet M. 
Published: June 2007

Teaching activities of the “Institut Universitaire de Technologie de Lille” (France) were previously reported.The present paper reports measurement results obtained by students during their last training period for about a
hundred capacitors made with commercial dielectrics (EMCA CDP 400, EMCA CDP 2000, and ESL K 1000).We examine the following points: reproducibility of capacitors during fabrication, correlation between electrical
parameters of components and firing conditions, measurements of capacitance and loss factor between 10 kHz and
20 MHz for temperatures ranging from 20°C to 100°C.
Criteria of Low‐Noise Thick‐Film Resistors
Authors: Vandamme L. K. J. 
Published: June 2007

Our simple model of the noise of a thick‐film resistor leads to two limiting cases. For thick‐film resistors with a
conduction dominated by the glass interface, the relative noise is proportional to the sheet resistance, R□. For thick
film resistors, where the conduction is mainly dominated by the current constrictions in the contact areas between
grains, the relative noise is proportional to . Both trends have been observed. Some criteria of low‐noise thick‐film
resistors are derived from the developed noise relations.The major conclusion is that measurements of the noise index are a nondestructive way to check quantitatively
the operations used to manufacture high‐quality thick‐film resistors. Inadequate materials or treatments, weak or
brittle wire bonds and reliability are easily detected by 1/f noise measurements.
Influence of the Metal Migration From Screen‐and‐Fired Terminationson the Electrical Characteristics of Thick‐Film Resistors
Authors: Cattaneo A. , Cocito M. , Forlani F. , Prudenziati M. 
Published: June 2007

The electrical characteristics of ruthenium‐based thick‐film resistors with different conductive terminations (PtAu
and Ag based compositions) and with different aspect ratios were examined. The purpose is to understand the effects
of resistivity decrease and TCR variation caused by the migration of metal particles from the terminations into the
resistor film.The majority of the data were collected by using silver‐based terminations since Ag diffusion processes, and then
the relevant electrical effects, are emphasized.Scanning electron microscopy, electron microprobe analysis and X‐ray diffraction analysis have been used to
analyze the diffusion processes and the thick‐film microstructures. It is shown that the experimental data is simply
explained by a conduction model which assumes percolative tunneling of electrons through conductive grains
embedded in the glass matrix of the resistors. Using simple hypotheses the model theory gives a good quantitative
fit of the experimental results.
Design of Wide Band Amplifiers Using Hybrid Integrated Techniques
Authors: Sonkoly Aurel 
Published: June 2007

This article deals with the design of wide band transistor amplifiers. The effects of parasitic elements are significant
in the high frequency circuits mounted traditionally and they can only be partially computed. That is why, at
present, good quality wide band transistor amplifiers can only be realized using hybrid techniques in an economical
production environment. Precise equivalent circuits of high frequency transistors cannot be given, so these devices
are characterized by the scattering parameters. Using a digital computer in order to analyse transistor amplifiers the
impedance, admittance, transmission and scattering parameters must be converted rationally. To compensate the
circuits at high frequencies inductive elements are needed. Using thin film hybrid techniques, the inductor can be
realized on a ceramic substrate as an open, i.e. asymmetrical, microstrip transmission line section.Up to now, in our institute, two circuit families of wide band amplifiers based on the above thin film hybrid
principles have been produced. These circuits are designed for use as general purpose amplifiers but they are also
suitable for CATV and measuring systems.
An Evaluation of the Voltage‐Current Rating Characteristics of Miniature Monolithic RF Ceramic Capacitors
Authors: Albert M. J. 
Published: June 2007

This paper reviews the establishment of RF voltage and current rating characteristics of monolithic ceramic
capacitors, using thermal balance considerations between heating of the component due to dielectric losses and heat
transport through conduction by the electrodes.Maximum thermal voltages and currents, characteristic of the electric and thermal conductivities of the dielectric
material, were calculated on the basis of dielectric loss‐frequency characteristics determined experimentally for
test devices resembling in their design those of miniature RF power capacitors, and UHF/microwave porcelain chip
capacitors for applications in strip line circuits.Maximum rated RF voltages for the specific components were evaluated by consideration of the elements of
dielectric strength and breakdown properties.By the establishment of the maximum internal temperatures developed within the dielectric upon the application
of RF voltages which are permissible for reliable operation of the component, the RF voltage and current
rating characteristics may be designated in terms of characteristic limiting impedances determining regions of the
characteristics where limitations by the maximum rated voltage, power, or current obtain.Relations between rating characteristics and component design are briefly reviewed.
A New Analytical Expression for the T.C.R. of Thin Monocrystalline Metal Films
Authors: Tellier C. R. 
Published: June 2007

The analysis of electrical conductivity of continuous thin monocrystalline metal film has been treated by assuming
that the scattering from other sources than grain‐boundaries can be described by an effective relaxation time. This
relaxation time method is applied to the temperature coefficient of resistivity and leads to an analytical approximate
equation in terms of the grain‐boundary reflection coefficient r and the reduced thickness k.Comparison of the results with those deduced from the exact equation (derived from the Mayadas and Shatzkes
theory) shows that they deviate by less than 5% in large k–, p–, and r– ranges.
Chemical Reaction and Electrical Properties of Amorphous RuO2‐Ag‐Glass Ternary System
Authors: Ikegami Akira , Shinriki Kiichi 
Published: June 2007

The relationship between composition, electrical properties, and the chemical reaction during firing of amorphous
RuO2‐Ag‐Glass ternary system are investigated. The results are as follows.1) Iso‐resistivity, iso‐TCR and iso‐noise index curves of the system are determined. They have a common feature
with regard to their bending in the composition region containing less than about 10wt% Ag.2) X‐ray diffraction and thermal differential analysis reveals the solution of Ag into glass phase in addition to
the crystallization of amorphous RuO2.3) The triaxial diagram of isothermal section at 850℃ is given.4) Electrical isograms in the system are discussed in relation to the solubility of Ag into glass phase.
Hybrid Realisation of High Precision Analog Conversion Modules
Authors: Kun L. 
Published: June 2007

High precision analog modules are manufactured using film technologies. Components which are critical as regards
operation and stability are made by thin film technology, additional elements and interconnection of active
components are made using thick film technology.Using these two separate manufacturing methods to obtain high stability and accuracy, optimum cost and yield
can be achieved. To illustrate these facts, two circuits are discussed in detail, a voltage to frequency converter and a
log amplifier.
Principe d′un Analyseur de Spectre Optique Utilisant les CouchesMinces Pulverisees
Authors: Murray H. 
Published: June 2007

Cette étude décrit le principe d′un analyseur de spectre optique entre 2000 Å et 7000 Å, utilisant les propriétés
spécifiques de l′effet photovoltaïque apparaissant dans les structures sandwich de faible épaisseur. La mesure des
longueurs d′onde est liée à la détermination du point de renversement de la tension photovoltaïque en circuit ouvert;
le courant de court‐circuit étant par ailleurs proportionnel au flux lumineux. La précision obtenue sur la mesure des
longueurs d′onde dépasse 0,5% si le flux lumineux est supérieur au seuil minimum de 10 μW/cm2.Specific properties of photovoltaïc effects in thin sandwich films have been used to describe a spectral analyser for
optical radiations in the range 2000 Å to 7000 Å. In such structures, we have shown that the photovoltaïc current
has a polarity depending on the wavelength of incident radiation. Further studies relating to conduction and
photoconduction phenomena allow us to attribute the reversal effect to a photoexcitation of ionised traps (Poole
Frenkel effect) or a photoexcitation from valence to conduction band of the photoconductor (Interband
transitions). As these two photoeffects present dimensional dependence, the reversal wavelength λ0 is thickness
dependent. Multilayer dielectric sandwich films may be used as spectral analysers after specific calibration of the
bias voltage, with an accuracy of 0.5% when the intensity of light is greater than 10 μW/cm2.We have obtained some applications of such detectors in the U.V. region, when the dielectric is made from
sputtered zinc sulphide and in the visible region with cadmium sulphide. The specific properties of sputtering
processes are particularly adapted to the introduction of such analysers in microelectronics devices.
An Installed Tape Automated Bonding Unit
Authors: Kurzweil Karel 
Published: June 2007

The Tape Automated Bonding (TAB) was developed and industrialized to achieve a higher packaging density in
computer applications. After elaboration and testing of the prototype units, significant work was done to transfer
all the activity into production.After a brief review of the principle of TAB technology the main characteristics of the manufacturing site are
presented and the most significant equipments developed for production needs are briefly described. It becomes
apparent that TAB and micropackaging technology are not limited to computers but can be considered in many
other microelectronic applications.
The Sintering Mechanism of Aluminium and the Anodization of Aluminium Sintered Bodies
Authors: Okuma Sadao 
Published: June 2007

It has been said that aluminium is hard to sinter. This is because a hard aluminium oxide film forms naturally on
exposed aluminium in air, and in the case of heat‐treatment for sintering, another type of hard aluminium oxide
file also forms. Thus aluminium is hard to sinter at about 600℃. The uthor has succeeded in manufacturing
aluminium sintered bodies, by using a vacuum, an inactive gas or a reducible gas atmosphere for the sintering
environment.The possibility of producing a satisfactory dielectric on the aluminium sintered body was also investigated. An
aluminium sintered body has physical properties different from aluminium foil or plate, because it is always in the
porous state.In this paper, the author presents the experimental results on aluminium sintered bodies manufactured under
various conditions and the results of anodization of the sintered bodies.
National and Transregional StandardizationActivities and the Present World Market
Authors: Pokorny F. 
Published: June 2007

On the occasion of the “Electronica 1978”, an exhibition of electronic components and modules held in Munich in
November 1978, a technical session took place entitled “Aspects of the International Standardization of
Components”. One of the four lectures on standardization reviewed current standardization activities in general. An
English version of this lecture is given below.After describing the development of standardization at national, regional and international levels, the author
identifies the various organisations involved and explains how they cooperate. International standards are in the
future to be accorded priority in the interest of the international market. Some aspects of electronic materials are
discussed and new trends in standardization work indicated. In conclusion statistics covering the volume of work on
standardization and the cost factors involved are presented.Some of these statistics, which are based on investigations conducted in Germany, may stimulate similar
investigations in other countries.
Generalized Theory of Electrical Conductivity and Current Noise for Discontinuous Metal Films Over aWide Range of Temperatures
Authors: Celasco M. , Masoero A. , Mazzetti P. , Stepanescu A. 
Published: June 2007

A complete discussion with an extension to the high temperature range of the main results of a recent theory1 on
the electrical conduction and current noise in discontinuous metal films is given. In this theory the main conduction
mechanism is a direct‐tunnelling process of the electrons between metal islands within the insulator substrate. The
tunnelling electrons must overcome a potential barrier which is temperature dependent. The model assumes that
the electrons trapped in surface states can tunnel in the metal states giving rise to a double charge layer at the
interface. The current noise is generated by a modulation mechanism of the carrier direct tunnelling due to thermal
fluctuation of the potential barrier height, generated by a corresponding fluctuation of the surface charge.Experimental results for the conductivity and current noise behaviour on Au film deposited on sapphire tube are
also given up to a temperature of about 950 K, and interpreted on the basis of the above theory.