bluuebunny/crossref_metadata_2025_split huggingface dataset:
71.2: Gray Level Redistribution in Field Sequential Color LCD Technique for Color Breakup Reduction
Authors: Chen Chun‐Ho , Chen Ke‐Horng , Huang Yi‐Pai , Shieh Han‐Ping D. , Ho Ming‐Tsung 
Published: January 2009

AbstractA gray level redistribution for color filterless liquid crystal displays (LCDs) was proposed to suppress the color breakup (CBU) artifact on field sequential color (FSC) displays. This method discolors the primary color fields and redistributes the color intensities to a color‐mixed field. The algorithm based on the image content was developed and implemented on a 32‐inch panel. According to the evaluation of experiments and observations, the proposed method has been demonstrated to greatly suppress CBU in LCD applications.
71.3: Field Sequential Color Notebook Using LED Scanning Backlight System
Authors: Lin Chin‐Young , Chou Ming‐Der , Tai Wen‐Chih , Huang Chia‐Ming , Tsou Chien‐Lung , Mo Chi‐Neng 
Published: January 2009

AbstractWe developed a 15.4″ Color Filter‐less NB backlight system by using field sequential method and multi‐area algorithm successfully. We employed three parts individual light‐guides to reduce color mixing. The optimized micro‐structure pattern was designed to solve the dark line problem between the adjacent regions of light‐guides. As results, a 15.4″ TFT Color Filter‐less LCD NB was obtained with 250 nits and 80% uniformity.
71.5: Stencil‐FSC Method for Color Break‐Up Suppression and Low Power Consumption in Field‐Sequential LCDs
Authors: Lin Fang‐Cheng , Huang Yi‐Pai , Wei Ching‐Ming , Shieh Han‐Ping D. , Tsai Chi‐Chung , Tai Wen‐Chih 
Published: January 2009

AbstractField sequential color liquid crystal displays (FSC‐LCDs) are still facing a serious artifact, color break‐up (CBU), which degrades image quality. Consequently, we propose the “Stencil‐FSC” method, applying local color‐backlight dimming technology to FSC‐LCDs with a 240 Hz field rate which not only suppresses CBU efficiently but also enhances the contrast ratio of images in using ultralow average power consumption. The Stencil‐FSC method was demonstrated on a 32‐inch FSC‐ LCD and effectively suppressed CBU, resulting contrast ratio of more than 5,500:1, and average power of less than 45 Watt.
72.1: Invited Paper: PenTile RGBW® Color Processing
Authors: Elliott Candice H. Brown , Higgins Michael F. , Hwang Sarah , Han SeokJin , Botzas Anthony , Hsu Bai‐Shuh , Im Moon , Nishimura Shunichi 
Published: January 2009

AbstractThe conversion of tri‐vectored color values to quad‐vectors creates a degree of freedom that may be used to optimize color reproduction and image reconstruction. Global selection from among possible RGBW metamers improves image texture. Local selection from among possible metamers improves subpixel rendering. Combining RGBW with Dynamic Back Light Control eliminates Out‐of‐Gamut colors while still maintaining power reduction benefits of RGBW. Local mapping vs. global mapping of Out‐of‐Gamut colors improves brightness without sacrificing local luminance contrast for more aggressive power savings modes.
72.3: Free Color Wash‐Out Solution with Advanced Gamma‐Control Technology
Authors: Chen Chao‐Yuan , Su Jenn‐Jia , Hsu Simon W. H. , Su Justin , Chang Tingrei , Liau Wei Lung , Lien Alan 
Published: January 2009

AbstractWe report an advanced gamma control technology for color wash‐out free liquid crystal display (LCD) with individual subpixel control technique. The measured Δu'v' of the skin color is less than 0.02 at whole viewing angle. Compared to the conventional gamma setting, this advanced technology provides not only lower color wash‐out but the smoother oblique gamma curve with the suitable area ratio design. This implies that the delicate display quality can be achieved without artificial contour in oblique view.
72.4: Novel LCD Driver ICs with Built‐In Programmable RGB Independent Gamma Control
Authors: Nose Takashi , Furihata Hirobumi , Hayama Hiroshi 
Published: January 2009

AbstractWe have developed a novel LCD driver IC with a programmable RGB Independent gamma‐curve control function. Our driver can control gamma‐curves of LCD panels with various gamma values. By setting only a few registers, detailed and accurate controls can be achieved. And, by correcting gamma‐curve of red, green and blue independently, driven LCDs have achieved high quality display images without the color shift.
73.1: Invited Paper: Modeling the Effect of Image Noise on Perceptual Decisions
Authors: Abbey Craig K. , Eckstein Miguel P. 
Published: January 2009

AbstractImage noise arising from acquisition or display can limit the utility of images acquired for medical or scientific purposes. for several years, investigators in the medical image perception community have been building models of how human observers perform basic visual tasks in the presence of image noise. We review these models along with some experimental validations of them.
73.2: A New Methodology for Clinical and Perceived Quality of Medical Displays
Authors: Marchessoux Cédric , Spalla Guillaume , Kimpe Tom 
Published: January 2009

AbstractThe aim of the study presented in this paper is to develop and validate a new methodology for comparing medical displays by means of a clinical perceived image quality approach. for this purpose, as virtual specialist, a Human Visual Observer Model (HVOM) was developed and can determine when the signal pathology can be perceived on the displays. A curve corresponding to the perception vs signal contrast generated and based on it, displays can be compared.
73.4: Investigation of Crosstalk in a 2‐View 3D Display
Authors: Chen Li , Tu Yan , Liu Wei , Li Qiaofen , Teunissen Kees , Heynderickx Ingrid 
Published: January 2009

AbstractIn stereoscopic displays, the views for both eyes must be clearly separated otherwise crosstalk is observed. Both visibility and annoyance of crosstalk is investigated for a 2‐view 3D display with perception experiments. Results show that a 1% increment in crosstalk is visible, while 5.8% crosstalk is perceptible, but not annoying.
10.2: Motion Artifact Analysis on Scanning Backlight LCD
Authors: Song Wen , Teunissen Kees , Li Xiaohua , Zhang Yuning , Wang Xianchun , Heynderickx Ingrid 
Published: January 2009

AbstractA simulation method based on temporal step response measurements is used to model motion artifacts of a scanning‐backlight LCD‐TV, including ghosts and color aberration. Simulation results are validated with perception experiments, and thus can be used to develop metrics predicting an LCD's motion performance.
73.5L: Late‐News Paper: Observer Strategies for Assessment of Temporal Response — Effect of Technology
Authors: Liang Hongye , Badano Aldo 
Published: January 2009

AbstractWe compare the detection performance of human observers in LCDs and CRTs using artificial complex backgrounds. Our results suggest that the degradation in performance at high browsing speeds observed in LCDs is not seen or much more subtle in CRTs, even at 50 frames per second.
P‐1: Artificial Retina Using Thin‐Film Devices
Authors: Kimura Mutsumi , Nishizaki Yoshitaka , Shima Takehiro , Yamashita Takehiko 
Published: January 2009

AbstractWe demonstrate an artificial retina using the p/i/n thin‐film phototransistors and thin‐film transistors. The illuminance detection is confirmed with sensitivity control. A kind of image‐operation function, edge enhancement, is also integrated. This artificial retina is suitable for living bodies because it can be potentially fabricated on the harmless substrate.
P‐2: Pulse‐Width Modulation with Current Uniformization for TFT‐OLEDs
Authors: Kimura Mutsumi , Suzuki Daisuke , Hara Yuji , Sawamura Shigeki , Kato Masakazu 
Published: January 2009

AbstractA novel driving concept, pulse‐width modulation with current uniformization, is proposed for TFT‐OLEDs. This driving method can simultaneously achieve precise grayscale and exceedingly improve luminance uniformity. Its working is confirmed using an actual pixel equivalent circuit. Its tolerance against characteristic deviations of TFTs and OLEDs is confirmed using circuit simulation.
P‐6: Zn0.97Zr0.03O‐TFT Fabricated by Sol‐Gel Method and Its Application for Active Matrix LCDs
Authors: Chiang Shin‐Chuan , Yu Chin‐Chih , Chang Fan‐Wei , Liang Shuo‐Wei , Tsai Chia‐Hao , Chuang Bor‐Chuan , Tsay Chien‐Yie 
Published: January 2009

AbstractIn this study, Zn0.97Zr0.03O thin films were prepared by sol‐gel method and TFTs with Zn0.97Zr0.03O active channel layer were fabricated. Field effect mobility and threshold voltage of the Zn0.97Zr0.03O‐TFT are 0.0042 cm2/V‐sec and 24.5 V, respectively. In addition, a 4.1″ diagonal QVGA AM‐LCD driven by Zn0.97Zr0.03O‐TFT has been successfully developed.
P‐7: Improving Electrical Performance of the Scaled Low‐Temperature Poly‐Si Thin Film Transistors Using Vacuum Encapsulation Technique
Authors: Lin Wei‐Kai , Liao Ta‐Chuan , Wu Chun‐Yu , Tu Shih‐Wei , Liu Yen‐Ting , Lin Jun‐Quan , Cheng Huang‐Chung , Chien Feng‐Tso , Chen Wan‐Lu , Chen Chii‐Wen , Tai Ya‐Hsiang 
Published: January 2009

AbstractA novel T‐shaped‐gated (T‐Gate) polycrystalline silicon thin‐film transistor (poly‐Si TFT) with in‐Situ vacuum gaps has been proposed and fabricated with a simple process. The T‐Gate structure is formed only by a selective undercut‐etching technology of the Mo/Al bi‐layers. Then, vacuum gaps are in‐Situ embedded in this T‐Gate structure subsequent to capping the SiH4‐based passivation oxide under the vacuum process chamber. The proposed T‐Gate poly‐Si TFT has demonstrated to suppress the short‐channel effects by simulated and measured characterization. It is attributed to the undoped offset region and vacuum gap to reduce the maximum electric field at drain junction.
P‐9: Metallic Nanowires Film as Transparent Conducting Layer in TFT‐LCDs
Authors: Lai Shih‐Hsiang , Ou Chun‐Yao , Tsai Chia‐Hao , Chuang Bor‐Chuan , Ma Ming‐Ying , Liang Shuo‐Wei 
Published: January 2009

AbstractIn this study, an innovative metallic nanowires (M‐NW) film was prepared by solution‐based method and was employed as transparent conducting layer in TFT‐LCD as replacement to ITO. The transparency and surface resistivity of the M‐NW film are 92% and 30Ω/□, respectively. In addition, a 4.1″ diagonal QVGA AM‐LCD with M‐NW film has been successfully developed.
P‐10: Low Voltage Transflective Liquid Crystal Display with Wide Viewing Angle and Low Gray Level Inversion
Authors: Hsiao Chia‐Chiang , Lin Yung‐Lun , Cheng Ching‐Sheng , Hu Chin‐Jen , Huang Wei‐Ming 
Published: January 2009

AbstractA low driving voltage transflective electrically controlled birefringence (ECB) liquid crystal display (LCD) has been developed base on the Poincare sphere. The operation voltage can be reduced by adjusting the LC path in the Poincare sphere at dark state and compensating the LC residual phase with polarizer films. Based on this method, a low driving voltage about 3.3 Volt with high contrast ratio has been achieved. The power consumption of the panel could be reduced 10%∼15%.
P‐11: Amorphous In2O3‐Ga2O3‐ZnO Thin Film Transistors and Integrated Circuits on Flexible and Colorless Polyimide Substrates
Authors: Hsieh Hsing‐Hung , Wu Cheng‐Han , Wu Chung‐Chih , Yeh Yung‐Hui , Tyan Horng‐Long , Leu Chyi‐Ming 
Published: January 2009

AbstractA process was developed for fine fabrication of amorphous IGZO TFTs and integrated circuits on flexible and colorless polyimide substrates. TFTs with field‐effect mobilities of ∼10 cm2/Vs and ring oscillators with propagation delay of 0.35 μs per stage were achieved on the polyimide substrates.
P‐12: A New Stable a‐Si:H TFT Pixel for AMOLED by Employing the a‐Si:H TFT Photo Sensor
Authors: Shin Hee‐Sun , Park Hyun‐Sang , Lee Woocheul , Han Min‐Koo , Yoo Juhn‐Seok , Kim Chang‐Dong , Kang InByeong 
Published: January 2009

AbstractThe optical feedback pixel circuit has been attractive compensation scheme for improving AMOLED display quality. We reported that the photoelectric characteristics of the a‐Si:H TFT as the integrated photo sensor under two bias condition (Vgs=0V, Vgs<0V). And we proposed a new optical feedback pixel circuit integrating the a‐Si:H TFT photo sensor in each pixel. In order to improve the compensation ability, the sensor part is separated to the gate of driving TFT during selecting time. We verified the proposed pixel circuit could compensate the variation of OLED luminance not only by TFT degradation, but also by OLED degradation. We will also report the experimental results.
P‐14: Low‐Cost Amoled Televeision with IGNIS Compensating Technology
Authors: Chaji G. Reza , Alexander Stefan , Nathan Arokia , Church Corbin 
Published: January 2009

AbstractMaxLife™ is a breakthrough backplane solution for AMOLED television. We demonstrate a compensating technology with a prototype that monitors and corrects for the OLED and TFT aging at each pixel for expected lifetimes of 50,000h+. This provides a tremendous boost in realizing low‐cost AMOLED TVs using amorphous or poly‐Silicon backplanes.
10.4: Measurement of Moving Picture Resolution for Displays Using Scrolled Sine‐Bursts
Authors: Kawahara Isao 
Published: January 2009

AbstractMeasurement of moving picture resolution for displays has been established, featuring a set of scrolled sine‐bursts with different frequencies and different signal levels. for higher accuracy, ingenious ideas including sub‐pixel scrolling are introduced, showing the definite advantages over response‐time‐based approaches. Automated system and human visual perception are also discussed.
P‐15: A 3 inch Active Matrix for Color Sequential‐ Liquid Crystal Display (CS‐LCD) Based on Metal Induced Continuous Zonal Domain (CZD) Polycrystalline Silicon Technology
Authors: Zhao Shuyun , Meng Zhiguo , Li Yuetwing , Wong Man , Kwok Hoi Sing 
Published: January 2009

AbstractColor‐sequential liquid crystal display (CS‐LCD) can be realized without color filter but using a field sequential LED backlight, which enables a high efficiency of backlight and low power consumption. In this paper, the fast addressing active matrix for CS‐LCD is designed and fabricated with the technology of metal induced continuous zonal domain (CZD) polycrystalline silicon thin film transistors (TFTs). This panel provides fast addressing characteristics and large aperture ratio. Assembled with fast liquid crystal technology, high color purity and clear moving image can be obtained.
P‐19: Flexible Pentacene Organic Thin Film Transistors Using Sol‐Gel Hybrid Polymer Gate Dielectrics
Authors: Choi Chaun Gi , Kwak Seung‐Yeon , Bae Byeong‐Soo 
Published: January 2009

AbstractFlexible organic thin film transistors (OTFTs) have been realized with sol‐gel hybrid polymers (hybrimer) gate dielectric and poly(ether sulfone) substrate. The hybrimer thin films have good electrical and surface properties. OTFTs on polymer substrate exhibit good OTFT performance and small hysteresis.
P‐21: Stability and Integrability Evaluation of Organic Thin Film Transistor with Solution Processable Semiconductor
Authors: Yu Chien‐Hsien , Lei Tan‐Fu , Yan Jing‐Yi , Liao Jin‐Long , Chen Liang‐Hsiang , Lee Yen‐Ying , Lin Mei‐Ru , Shen Yu‐Yuan , Lee Tzu‐Wei , Lin Tsung‐Hsien , Liao Ko‐Pin , Yeh Shu‐Tung , Cheng Kung‐You , Ho Jia‐Chong , Chen Ming‐Chou 
Published: January 2009

AbstractWe demonstrate Organic thin film transistors (OTFTs) with solution‐processed semiconductor, triethylsilylethynyl anthradithiophene (TES‐ADT), as the active layer materials are investigated. Bottom‐gate solution‐processed TES‐ADT OTFTs possess excellent performance with mobility of 0.05 cm2V−1s−1, current modulation of 4×106, sub‐threshold slope of 0.91 V/dec. and threshold voltage of −7.7 V on glass substrate. The reliability of device is evaluated and demonstrates good electrical performance uniformity and stability after bias stress. Particularly, the devices exhibit reversible degradation after vacuum annealing, shown it's environmental stability under air atmosphere. Moreover, the device integrability has been demonstrated with two transistors‐one capacitor (2T1C) array for display media driving such as organic light emitting diode (OLED).
P‐23: Transparent Amorphous Oxide Thin Film Transistors Fabricated by Solution Coating Process
Authors: Seo Seok‐Jun , Choi Chaun Gi , Hwang Young Hwan , Bae Byeong‐Soo 
Published: January 2009

AbstractTransparent thin film transistors (TTFTs) with zinc tin oxide (ZTO) and indium zinc oxide (IZO) channel layer by a simple and low‐cost solution process were demonstrated. The fabricated TTFTs exhibited reasonable transfer characteristics with mobilities of >cm2/V⋅s.
P‐24: Fabrication of Solution Processed InGaZnO Thin Film Transistor for Active Matrix Backplane
Authors: Kim Gun Hee , Shin Hyun Soo , Kim Kyung Ho , Park Won Jun , Choi Yoon Jung , Du Ahn Byung , Kim Hyun Jae 
Published: January 2009

AbstractWe report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on‐to‐off current ratio of ∼1.88×105 and field effect mobility of ∼0.96 cm2/Vs, respectively.
P‐25: Nanocrystalline Silicon Thin Film Transistor Fabricated without any Substrate Heating for a Flexible Display
Authors: Kim Sun‐Jae , Han Sang‐Myeon , Kuk Seung‐Hee , Kang Dong‐Won , Ha Tae‐Jun , Han Min‐Koo 
Published: January 2009

AbstractWe have fabricated nc‐Si film and SiO2 film without substrate heating using ICP‐CVD. nc‐Si film has amorphous incubation layer of 12nm and crystalline volume fraction of 27%. Hydrogen plasma post‐treatment was performed SiO2 film and electrical characteristic of SiO2 film was improved due to reduction of charges and annealing effect. And we have fabricated nc‐Si TFT without substrate heating using ICP‐CVD. Although there was no external heating, mobility of 6.42cm2/V⋅s was obtained. This result indicates that nc‐Si TFT fabricated without any substrate heating may be suitable device for a flexible display.
P‐26: Thermally Annealed Asymmetric‐Offset Polycrystalline Thin Film Transistor with Low Leakage
Authors: Lee Won‐Kyu , Han Sang‐Myeon , Kang Dong‐Won , Han Min‐Koo , Choi Joonhoo , Kim Chi‐Woo 
Published: January 2009

AbstractWe have designed and fabricated a new top gate asymmetric offset structured n‐type depletion mode poly‐Si TFT of which the leakage current was considerably reduced due to successful suppression of electric field near the drain region caused by the asymmetric offset structure. The TFT was fabricated on the glass substrate by employing alternating magnetic field enhanced rapid thermal annealing (AMFERTA). The a‐Si and n+ a‐Si layers were deposited successively, and did not use any other ion doping methods. The asymmetric offset structure could be made without additional processes or masks. This new structure suppressed the leakage current to about 86% of non‐offset structured AMFERTA poly‐Si TFT without considerable sacrifice of on current. This suppression method of leakage current can be helpful to remain the good image quality and save the power consumption of AMOLED panels.
P‐27: Advanced Gate‐All‐Around Fin‐Like Poly‐Si TFTs with Multiple Nanowire Channels
Authors: Tu Shih‐Wei , Liao Ta‐Chuan , Lin Wei‐Kai , Liu Cheng‐Chin , Tai Ya‐Hsiang , Cheng Huang‐Chung , Chien Feng‐Tso , Chen Chii‐Wen , Chen Wan‐Lu 
Published: January 2009

AbstractThe gate‐all‐around (GAA) fin‐like poly‐Si TFTs (FinTFTs) with multiple nanowire channels (MNCs) have been fabricated using a simple process to demonstrate high performance electrical characteristics. The fin‐like nanowire (NW) channel with high body thickness‐to‐width ratio (TFin/WFin), approximately equals to one, was realized only with a sidewall‐spacer formation. The unique suspending MNCs were also achieved to build the GAA structure. By the way, the GAA‐MNC FinTFTs showed outstanding three‐dimensional gate controllability and excellent electrical characteristics, which revealed a high ON/OFF current ratio (> 108), a low threshold voltage, a steep subthreshold swing, a near‐free drain‐induced barrier lowering and a good reliability. Therefore, such the high‐performance GAA‐MNC FinTFTs are very suitable for the applications in the system‐on‐panel (SOP) and three‐dimensional (3D) circuits.
P‐28: ZnO TFTs Fabricated at Room Temperature by Solution Process
Authors: Oh Ji‐Young , Kang Seung‐Youl , Hwang Chi‐Sun , Kim Gi‐Hyun , Ahn Seong Duk , Kim Chul‐Am , Koo Jae Bon , Suh Kyoung‐Soo , Shim Hong‐Ku 
Published: January 2009

AbstractThe ZnO nanorods TFT using solution process was investigated. The nanorods were well‐chemically synthesized by ultrasonic methods and their length and diameter were adjusted to about 50∼150nm and 5∼15nm, respectively. The nanorods were coated onto SiO2 substrate by spin casting. The nanorods films were treated at room temperature condition. The device exhibits an on‐to‐off current ratio of 8.6 × 105 and a field mobility 2.1 cm2V−1s−1.
P‐30: A Relation Between an a‐Si: H Integrated Buffer Transistor Resistance and Falling Time of Gate Output Signal
Authors: Kim Do‐Sung , Jo Sung‐Hak , Jeong Seong‐Hun , Nam Dae‐Hyun , Min Soon‐Young , Lee Kyung‐Ha , Shin Jong‐Keun , Chung In Jae 
Published: January 2009

AbstractIn case of using an a‐Si:H integrated gate driver for TFT‐LCD [1–4], it's important to define gate falling time exactly. Because an a‐Si:H integrated gate driver might degrade with bad environment easily, which result in gate signal delay or decreasing output signal. In other words, a little degradation of a‐Si:H gate driver affects the quality of picture. If a little degradation of a‐Si:H gate driver under special circumstance is inevitable, it's necessary to make a gate driver has so sufficient margin time within one horizontal time that cannot be interfered with next data signal. So, it's necessary to understand what factors affect the a‐Si:H integrated gate output signal. Especially, we focused an a effect of buffer transistor resistance for gate output signal. In our study, with a test a‐Si:H integrated gate driver pattern and simple simulation process, a relation a‐Si:H integrated buffer transistor resistance and gate output signal is analyzed.
P‐259L: Late‐News Poster: A 14inch Uniform AMOLED Display with Low Cost PECVD Based Microcrystalline Silicon TFT Backplanes
Authors: Girotra Kunal , Park Seungyu , Huh Jung‐Moo , Hong Chen , Park Kyoungtae , Lee Sangpil , Lee J. H. , Chu Changwoong , Goh Joonchul , Choi Joonhoo , Kim Chiwoo , Souk J. H. 
Published: January 2009

AbstractThis paper discusses development of uniform 14.1 inch AMOLED display using PECVD based microcrystalline silicon (mc‐Si) TFTs. Microcrystalline silicon was deposited using conventional 13.56 MHz Plasma Enhanced Chemical Vapor Deposition (PECVD) with novel gas precursors. The mc‐Si TFT's show a field effect mobility of around 1cm2/V.s and off‐current less than 1pA. Electrical stress on mc‐Si TFTs for a long time shows no significant threshold voltage shift indicating a stable TFT backplane. Significant uniformity improvements were made with novel TFT structure to give uniform AMOLED display. The deposition time for mc‐Si TFTs was significantly reduced by using a thin mc‐Si layer. Mc‐Si TFT backplanes using conventional PECVD equipment offers significant cost advantages over other competing laser and non‐laser polysilicon TFT technologies for AMOLEDs.
P‐31: Thin and Light Integrated TSP with Enhanced Display Qualities
Authors: Kim Seongho , Kim Seonmin , Chang Youngjin , Jin Seonghyun , Moon Sangho , Choi Jaebeom , Kim Chiwoo , Yun Haeyoung 
Published: January 2009

AbstractWe have developed an innovative liquid crystal display (LCD) which includes a resistive type touch screen system — integrated touch screen panel (iTSP). It can detect touch events and locate touch positions by measuring voltage at the contact point between indium tin oxide (ITO) coated color filter glass and ITO conductive isotropic film. iTSP shows not only better display qualities outside but also considerable decreases in weight and thickness compared to conventional resistive touch screen panel which consists of ITO glass and conductive film. In this paper, main characteristics of 7.0″ WVGA LCD Panel integrated with the touch screen function were presented and the optical characteristics also were discussed.