bluuebunny/crossref_metadata_2025_split huggingface dataset:
A scapula deformity in two burials from medieval England
Authors: Mays S. A. 
Published: June 2008

AbstractA scapula malformation is described in two burials from the site of the late medieval Dominican friary at Ipswich, UK. The changes appear most consistent with primary scapular neck dysplasia. One of the burials also showed clear signs of leprosy. The burials are of lay benefactors of the friary. The Ipswich Dominican friary had no known function as a leprosy hospital. Finding of burials of lepers other than in burial grounds of leprosaria is highly unusual for medieval England. Scapular neck dysplasia has a strong genetic component in its aetiology. This, coupled with its rarity, suggests a close genetic link between the two burials. The findings suggest that in this case, family ties with the friary overrode the normal medieval custom of interring lepers in leprosy hospitals. This illustrates that even rare skeletal variants may convey useful biocultural information about past populations. Copyright © 2008 John Wiley & Sons, Ltd.
Plasma polymerization of acetylene onto silica: an approach to control the distribution of silica in single elastomers and immiscible blends
Authors: Tiwari M. , Noordermeer J. W. M. , van Ooij Wim J. , Dierkes W. K. 
Published: June 2008

AbstractSurface modification of silica by acetylene plasma polymerization is applied in order to improve the dispersion in and compatibility with single rubbers and their blends. Silica, used as a reinforcing filler for elastomers, is coated with a polyacetylene (PA) film under vacuum conditions. Water penetration measurements show a change in surface energy due to the PA‐film deposition. The weight loss measured by thermo‐gravimetric analysis (TGA) is higher for the PA‐coated silica compared to the untreated filler, confirming the deposition of the PA film on the silica surface. Time of flight‐secondary ion mass spectrometry (ToF‐SIMS) shows the well‐defined PA cluster peaks in the high mass region. Scanning electron microscopy (SEM) measurements show silica aggregates, coalesced by the coating with smooth and uniform surfaces, but without significant change in specific surface area. Elemental analysis by energy dispersive X‐ray spectroscopy (EDX) measurements also confirms the deposition of the polymeric film on the silica surface, as the carbon content is increased. The performance of single polymers and their incompatible blends based on S‐SBR and EPDM, filled with untreated, PA‐ and silane‐treated silica, is investigated by measurements of the bound rubber content, weight loss related to bound rubber, cure kinetics, reinforcement parameter, Payne effect, and mechanical properties. The PA‐ and silane‐modified silica‐filled pure S‐SBR and EPDM samples show a lower filler–filler networking compared to the unmodified silica‐filled elastomers. Decrease in the reinforcement parameter (αF) for the plasma‐polymerized silica‐filled samples also proves a better dispersion compared to silane‐modified and untreated silica‐filled samples. On the other hand, the PA‐silica‐filled samples show a higher bound rubber content due to stronger filler–polymer interactions. Finally, the PA‐silica‐filled pure EPDM and S‐SBR/EPDM blends show high tensile strength and elongation at break values, considered to be the result of best dispersion and compatibilization with EPDM. Copyright © 2008 John Wiley & Sons, Ltd.
Self‐initiation of the UV photopolymerization of brominated acrylates
Authors: Scherzer Tom , Knolle Wolfgang , Naumov Sergej , Elsner Christian , Buchmeiser Michael R. 
Published: June 2008

AbstractBrominated aromatic acrylates were found to polymerize rapidly upon exposure to UV light. Moreover, they are able to initiate the UV‐induced polymerization of acrylic formulations that do not contain a conventional photoinitiator. In contrast, the corresponding unbrominated homologues are not effective as initiators. Investigations by real‐time FTIR spectroscopy have shown that the addition of only 1 wt % of a brominated acrylate is sufficient for an efficient initiation. Fast photopolymerization is achieved even if irradiation is carried out at λ > 300 nm where most acrylates do not absorb. Short‐lived transients were studied by laser flash photolysis. The triplet was found to show low sensitivity to oxygen which is because of its very short lifetime. Bromine radicals split of from the acrylates were trapped with bromine ions from tetraethyl ammonium bromide and detected as Br. The resulting quantum yields for the formation of bromine radicals are in the range of up to 0.3. Quantum chemical modeling was carried out to establish a mechanism for the release of bromine radicals. Both bromine and bromophenyl radicals are able to initiate the polymerization reaction. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 4905–4916, 2008
Alkyl chloride initiators for SET‐LRP of methyl acrylate
Authors: Lligadas Gerard , Percec Virgil 
Published: June 2008

AbstractSingle‐electron transfer living radical polymerization (SET‐LRP) proceeds by an outer‐sphere single‐electron transfer mechanism that induces a heterolytic bond cleavage of the initiating and propagatingR‐X (where X = Cl, Br, and I) species. Therefore, unlike the homolytic bond cleavage mechanism claimed for ATRP, SET‐LRP is expected to show a small dependence of the nature of the halide group on the apparent rate constant of activation. This means theR‐X with X = Cl, Br, and I must all be efficient initiators for SET‐LRP and no chain transfer must be observed in the case of initiators with X = Br and I. Here, we report the SET‐LRP of methyl acrylate initiated with the alkyl chlorides methyl‐2‐chloropropionate (MCP) and chloroform (CHCl3) and catalyzed by Cu(0)/Me6‐TREN/CuCl2in DMSO at 25 °C. A combination of kinetic and structural analysis was used to elucidate the MCP and CHCl3initiating behavior under SET‐LRP conditions, and to demonstrate the very small dependence of the SET‐LRP apparent rate constant of propagation on X while providing polymers with well defined architecture. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 4917–4926, 2008
Process‐free estimation of threshold current density of InAs quantum dot laser
Authors: Kumagai N. , Watanabe K. , Ishida M. , Nakata Y. , Hatori N. , Sudo H. , Yamamoto T. , Sugawara M. , Arakawa Y. 
Published: June 2008

AbstractWe have associated threshold current density of 1.3 μm InAs quantum dot (QD) laser diodes with the photoluminescence (PL) peak intensity of as‐grown wafers. These InAs QD laser wafers with stacking structure of 5 and 10 QD layers were grown by molecular beam epitaxy. PL measurements have carried out by high power excitation at room temperature. The PL peak intensity from ground state of InAs QDs has been inversely proportional to the threshold current density. Additionally, enhancement of PL peak intensity by increase in stacked QD layers has been corresponded to increase in maximum modal gain of QD laser. These results indicate that PL characterization by high power excitation is useful to estimate quality of as‐grown wafers without fabrication of QD laser diode. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
DFT study for the anisotropic epitaxial growth of a‐face ZnO(1120)
Authors: Ishii A. , Oda Y. , Fujiwara K. 
Published: June 2008

AbstractThe anisotropy of the epitaxial growth of a‐face ZnO(1120) is investigated using the density functional theory. The potential energy surface for Zn adatom and O adatom on the a‐face ZnO(1120) surface is calculated. The calculated results show us that the anisotropy of Zn adatom and O adatom is very large. The kinetic Monte Carlo simulation shows us that the such large anistropic migration barrier energy is the origin of the stripe structure. It is consistent with the experimentally observed anisotropic stripes on this surface. This is the abstract. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Fabrication of radial superlattices based on different hybrid materials
Authors: Deneke Christoph , Schumann Joachim , Engelhard Ronny , Thomas Jürgen , Sigle Wilfried , Zschieschang Ute , Klauk Hagen , Chuvilin Andrey , Schmidt Oliver G. 
Published: June 2008

AbstractThe fabrication of radial superlattices is demonstrated for three different hybrid material systems. Inherently strained pseudomorphic InGaAs/Fe3Si bilayers are rolled‐up to produce radial semiconductor/magnetic heterostructures. Apart from this epitaxially based material system, radial InAlGaAs/GaAs/Cr superlattices are investigated as an example for periodic semiconductor/metallic multilayers. Finally, rolled‐up InGaAs/GaAs/1‐hexadecanethiol layers are studied as a new class of semiconductor/organic short‐period superlattices. The radial superlattices are examined structurally, and particular attention is paid to the interfaces of the periodic hybrid heterostructures. These investigations reveal that, except for the semiconductor/organic hybrid material system, always a new interface layer forms, modifying the initial rolled‐up layer system. The study demonstrates the potential to fabricate periodic layer systems from pure single‐crystalline material, single‐crystalline/poly‐crystalline material as well as single‐crystalline/non‐crystalline material, which cannot be realized by any planar growth techniques. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
AlN/AlGaN/GaN MIS‐HEMTs with recessed source/drain Ohmic contact
Authors: Selvaraj S. Lawrence , Ito Tsuneo , Terada Yutaka , Egawa Takashi 
Published: June 2008

AbstractAlN/AlGaN/GaN MIS‐HEMTs were grown on 4 inch silicon to suppress the gate leakage and achieve high breakdown. However the drain current density maximum obtained is low (361 mA/mm) for 15 μm MIS‐HEMTs. Since the contact resistance of the Ohmic contacts on the insulating AlN is high (5.1 Ωmm), the thin AlN layer was etched prior to the evaporation of the source‐drain Ohmic contact. Though the recessed Ohmic contact reduced the contact resistance to 2.5 Ωmm there is no improvement in the drain current density. The poor quality of the 2 nm AlN growth on silicon could be the possible reason behind the low drain current density. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
High‐temperature (300 °C) operation of npn ‐type GaN/InGaN double heterojunction bipolar transistors
Authors: Nishikawa Atsushi , Kumakura Kazuhide , Kasu Makoto , Makimoto Toshiki 
Published: June 2008

AbstractWe investigated high‐temperature (300 °C) characteristics of npn ‐type GaN/In0.07Ga0.93N double heterojunction bipolar transistors (DHBTs). The current gain obtained at 300 °C is as high as 308, although it decreases with increasing temperature. In Gummel plots, both base and collector current increases with increasing base‐emitter voltage. While the maximum collector current at 300 °C is similar to that at room temperature (RT), the maximum base current monotonically increases with increasing temperature. Consequently, the reduction of the current gain with temperature is attributed to the increase in the base current. Since the activation energy of the reduction of the current gain is larger than the expected value assuming the increase in the hole back‐injection current from the base into the emitter, an increase in the carrier concentration of the p ‐In0.07Ga0.93N base with temperature is considered to be attributed to the reduction of the current gain. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Resonant tunneling of electrons through single self‐assembled InAs quantum dot at room temperature studied with conductive AFM tip
Authors: Tanaka Ichiro , Tada Y. , Nakatani S. , Uno K. , Azuma M. , Umemura K. , Kamiya I. , Sakaki H. 
Published: June 2008

AbstractResonant tunneling of electrons through a quantum level in a self‐assembled InAs quantum dot (QD) has been measured by conductive atomic force microscopy (AFM) at room temperature. InAs QDs are embedded in a 3.4 nm‐thick AlAs layer, and capped with 8.3 nm‐thick GaAs layer on which surface InAs QDs are deposited as nano‐scale electrodes. Bringing the conductive AFM tip on the surface InAs QD which should be vertically aligned with a buried QD, a bias voltage is applied to the sample, and a current flowing via the buried QD is measured. Negative differential resistance attributed to electron resonant tunnelling through a quantized energy level in the buried QD is observed in the current‐voltage characteristics. The voltage loss by nano‐scale electrode and the dependence of resonance voltage on the size of the surface QD‐electrodes are discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
226–273 nm AlGaN deep‐ultraviolet light‐emitting diodes fabricated on multilayer AlN buffers on sapphire
Authors: Hirayama Hideki , Yatabe Tohru , Noguchi Norimichi , Ohashi Tomoaki , Kamata Norihiko 
Published: June 2008

AbstractWe demonstrated AlGaN multi‐quantum‐well (MQW) deep‐ultraviolet (UV) light‐emitting diodes (LEDs) with wavelengths in the range of 226–273 nm on sapphire substrates. We achieved low threading dislocation density (TDD) AlN templates, formed through an ammonia (NH3) pulse‐flow multilayer (ML) growth technique, which were suitable for deep UV LEDs. The edge and screw‐type dislocation densities in these AlGaN buffer layers on ML‐AlN were 7.5×108 and 3.8×107 cm–2, respectively, as observed from cross‐sectional transmission electron microscope (TEM) images. We obtained single‐peaked operations of the LEDs with emission wavelengths of between 227‐273 nm. The output powers of the 253 nm and 261 nm LEDs were 0.4 mW and 1.0 mW respectively with injection currents of 100 mA, while maximum powers of 1.04 mW and 1.65 mW respectively were obtained under room temperature (RT) CW operation. The output power of a 227.5 nm LED was 0.11 mW with an injection current of 10 mA, and a maximum power of 0.15 mW was obtained under RT pulsed operation. The maximum external quantum efficiencies of the 261 nm and 227.5 nm LEDs were 0.23 and 0.2%, respectively. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Density functional theory calculations of electronic structure in silicon double quantum dots
Authors: Howard P. , Andreev A. , Williams D. A. 
Published: June 2008

AbstractThe finite difference method and anisotropic effective mass density functional theory (DFT) are used to calculate the electronic structure and wavefunctions of Silicon isolated double quantum dots. An optimised algorithm for determining the self‐consistent DFT potential was developed.The effects of applying electric fields to push the electrons from one dot to another dot in the double quantum dot are studied. We demonstrate that depending on the structure parameters there are two regimes corresponding to the strong and weak coupling between the two dots. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The role of doping type in setback layers on wafer‐fused AlGaAs/GaAs/GaN HBTs
Authors: Lian Chuanxin , Xing Huili Grace , Chang Yu‐Chia , Fichtenbaum Nick 
Published: June 2008

AbstractThe role of doping type in the setback layer of wafer fused AlGaAs/GaAs/GaN HBTs has been investigated. The calculation assuming an ideal GaAs/GaN interface indicates that the current blocking effect due to the conduction band discontinuity between GaAs and GaN can be effectively alleviated by inserting a lightly doped GaAs setback layer with either n‐type or p‐type doping. And the n‐type setback is expected to work better than the p‐type setback for the same doping concentration. In experiments encouraging current gain of ∼ 8 was observed in wafer fused HBTs containing 30 nm GaAs setback layers of either n‐type or p‐type doping, substantially improved from the HBTs without any setback, but still much smaller than annealed as‐grown AlGaAs/GaAs/GaAs HBTs. It was proposed that the non‐ideal fused interface with a thin disordered material and interface charges/traps dominates the device performance, and that likely both types of fused HBTs (setback doping concentration is ∼ 1 × 1017 cm–3) have similar band diagrams after taking into account impurity redistribution near the interface. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Diamond FETs on boron‐implanted and high‐pressure and high‐temperature annealed homoepitaxial diamond
Authors: Ueda Kenji , Yamauchi Yoshiharu , Kasu Makoto 
Published: June 2008

AbstractBy combining ion‐implantation and high‐pressure and high‐temperature (HPHT) annealing, we have obtained boron (B)‐implanted diamond layers with a high a hole concentration and mobility and succeeded in fabricating diamond FETs using the B‐implanted layers. For a B dose of 3×1015 cm–2, a sheet hole concentration and mobility of 1.6×1013 cm–2 and 41 cm2/Vs at 300 K were obtained. Diamond FETs fabricated on the B‐implanted layer showed maximum drain current of 0.15 mA/mm at gate voltage of ‐2 V and maximum breakdown voltage of 530 V, corresponding to ∼1.1 MV/cm. The breakdown voltage value is comparable to those of Schottky diodes using B‐doped CVD diamond films. These results confirm the high quality of the B‐implanted and HPHT‐annealed layers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Mixed ℋ︁2/ℋ︁∞ nonlinear filtering
Authors: Aliyu M. D. S. , Boukas E. K. 
Published: June 2008

AbstractIn this paper, we consider the mixed ℋ︁2/ℋ︁∞ filtering problem for affine nonlinear systems. Sufficient conditions for the solvability of this problem with a finite‐dimensional filter are given in terms of a pair of coupled Hamilton–Jacobi–Isaacs equations (HJIEs). For linear systems, it is shown that these conditions reduce to a pair of coupled Riccati equations similar to the ones for the control case. Both the finite‐horizon and the infinite‐horizon problems are discussed. Simulation results are presented to show the usefulness of the scheme, and the results are generalized to include other classes of nonlinear systems. Copyright © 2008 John Wiley & Sons, Ltd.
Dynamic purposeful learning in information literacy
Authors: Kenedy Robert , Monty Vivienne 
Published: June 2008

AbstractFaculty and librarians have been developing newer and better ways of imparting information literacy, recognizing that it is an important aspect of developing crucial critical skills in their students. We discuss how student learning is enhanced as the result of ongoing collaboration. Through what we call Dynamic Purposeful Learning (DPL) and the collaborative process, students learn dynamic information literacy and online research skills.
Three‐ and four‐dimensional ultrasound: new methods for evaluating fetal thoracic anomalies
Authors: Achiron R. , Gindes L. , Zalel Y. , Lipitz S. , Weisz B. 
Published: June 2008

AbstractObjectiveTo study three‐ (3D) and four‐dimensional (4D) ultrasound applications for the evaluation of fetal thoracic anomalies.MethodsVolume datasets of 23 fetuses with thoracic anomalies were acquired with static 3D and cine 4D ultrasound, i.e. spatiotemporal image correlation (STIC) mode. The volumes were analyzed and displayed by multiplanar and tomographic ultrasound imaging (TUI) modes and static volume contrast imaging (VCI). Color Doppler was added to the volumes acquired, and various rendering modes were used to display the volume datasets.ResultsThe mean gestational age at evaluation was 22 (range, 14–34) weeks. The anomalies were identified as: diaphragmatic hernia (n = 5), lung dysplasia (n = 11), skeletal dysplasia with small thorax/thanatophoric dysplasia (n = 2), abnormal situs (n = 2), hydrothorax (n = 2) and esophageal atresia (n = 1). The TUI mode achieved optimal display of the thorax, thereby aiding the diagnosis of diaphragmatic hernia and lung dysplasia. In right diaphragmatic hernias, the VCI mode proved invaluable as it distinguished liver from lung tissue. High‐definition color Doppler with glass‐body rendering significantly contributed to the detection of abnormal vascularization in lung dysplasia. Maximal transparent mode with a transvaginal transducer provided accurate diagnosis of skeletal dysplasia in the first trimester. Situs abnormalities were best viewed with a minimal transparent mode, in which abnormal organs and positions of vessels were clearly identified. Pleuroamniotic shunt localization was monitored precisely by 3D in a fetus with hydrothorax, and inversion mode added important information regarding the size of an esophageal pouch in a fetus with esophageal atresia.ConclusionThe 3D‐4D technique is a novel, useful sonographic tool for evaluating the fetal thorax. It enhances precise diagnosis and provides better spatial visualization of the anomalies involved. Copyright © 2008 ISUOG. Published by John Wiley & Sons, Ltd.
Validation of Concept Mapping Between PNDS and SNOMED CT
Authors: Westra Bonnie L. , Bauman Rhonda , Delaney Connie W. , Lundberg Cynthia B. , Petersen Carol 
Published: June 2008

ABSTRACTTHE PERIOPERATIVE NURSING DATA SET (PNDS) is a structured vocabulary developed by AORN to help document perioperative nursing practices.THE PNDS HAS BEEN MAPPED To the Systematized Nomenclature of Medicine Clinical Terms (SNOMED CT) reference terminology model to support the electronic exchange of nursing data.THIS STUDY VALIDATES the concept mapping between the PNDS and SNOMED CT, supporting an equivalent meaning of concepts between the two terminology systems. AORN J 87 (June 2008) 1217‐1229. © AORN, Inc, 2008.
The Effect of Nurse Staffing Patterns on Medical Errors and Nurse Burnout
Authors: Garrett Connie 
Published: June 2008

ABSTRACTHOSPITAL ADMINISTRATORS frequently rely on the use of mandatory or voluntary overtime to cover staff nurse vacancies. This practice is common in the perioperative setting, but it can lead to staff‐member fatigue that may adversely affect patient safety.THIS LITERATURE REVIEW explores the effect that nurse staffing patterns have on the frequency of medical errors, fatigue, and nurse burnout.THE EVIDENCE INDICATES that inadequate nurse staffing leads to adverse patient outcomes and increased nurse burnout. Hospital administrators should invest in adequate nurse staffing to improve patient safety and increase nurse retention. AORN J 87 (June 2008) 1191‐1204. © AORN, Inc, 2008.
Blood Conservation in a Congenital Cardiac Surgery Program
Authors: John Tracey , Rodeman Roberta , Colvin Roslyn 
Published: June 2008

ABSTRACTBLOODLESS SURGERY PROGRAMS are being instituted because of increasing public concerns about blood transfusions and the need to accommodate some patients' religious beliefs. Patients' desires to forego transfusion must be identified during the preoperative screening process and subsequently reflected on the surgical consent.PATIENTS ARE MANAGED preoperatively with erythropoietin and dietary supplements. The surgical team employs a variety of intraoperative and postoperative blood conservation techniques to help avoid the need for transfusion.A RETROSPECTIVE REVIEW of congenital cardiac procedures in a blood conservation program confirmed that bloodless cardiac surgery is effective. AORN J 87 (June 2008) 1180‐1186. © AORN, Inc, 2008.
Safe Positioning for Neurosurgical Patients
Authors: St‐Arnaud Danielle , Paquin Marie‐Josée 
Published: June 2008

ABSTRACTPOSITIONING THE PATIENT for surgery is an important part of perioperative nursing care that should not be underemphasized. The combined factors of time, mechanical pressure, and immobility increase the risk of tissue damage.THE OBJECTIVES of perioperative positioning activities are to balance optimal surgical exposure with the prevention of any injury related to position and to maintain normal body alignment without excess flexion, extension, or rotation.GENERAL PRINCIPLES OF POSITIONING and specific considerations with surgical rationale are presented in this article for each of the commonly used neurosurgical positions (eg, supine, knee‐chest, prone, lateral, park‐bench, sitting). AORN J 87 (June 2008) 1156‐1168. © AORN, Inc, 2008.