bluuebunny/crossref_metadata_2025_split huggingface dataset:
Studies on Epitaxial Growth of Organic Compounds on Sucrose by the Fourier Transform Method (II). Iso‐ and Heteroepitaxy
Authors: Adler H.‐J. , Follner H. 
Published: January 2007

AbstractIso‐epitaxial growth (twinning, parallel growth) of sucrose, β‐succinic acid, anthraquinone and isatin can be explained by a good fit of the energetic structures of both partners. The symmetry operations result from the pseudo‐symmetries of the reciprocal crystals. In all cases possible planes favoured for the formation of twins or parallel grown individuals can be predicted. Heteroepitaxial growth of β‐succinic acid, hexachlorobenzene, anthraquinone and isatin on (100)‐oriented sucrose has been observed. It is possible to explain the growth mechanisms by symmetry considerations of the energetic structures.
The Interaction Process between Crystallization and Solubility Interfaces in the Temperature Gradient Zone Melting Method
Authors: Tairov Ju. M. , Peev N. S. , Smirnova N. A. , Kalnin A. A. , Miropolski M. 
Published: January 2007

AbstractIn the present work the problem of the interaction process between crystallization and solubility interfaces in case of the temperature gradient zone melting method is discussed. Wellknown assumptions are considered. It is shown that an interaction between the both interfaces exists and the change of the form of the one interface leads to the corresponding change of the other interface.
The Precipitation of Sparingly‐soluble Alkaline‐earth Metal and Transition Metal Oxyanion Salts from Aqueous Solution at Ambient Temperatures to 100 °C: Anhydrous and Hydrated Precipitate Phases
Authors: Packter A. 
Published: January 2007

AbstractThe anhydrous and hydrated phases of the sparingly‐soluble barium, strontium, calcium, magnesium, lead(II), mercury(II), cadmium, zinc, copper(II), nickel(II), cobalt(II), iron(II) and manganese(II) salts of series of inorganic and organic oxyanions, precipitated from aqueous solution at ambient temperatures to 100 °C, have been tabulated and classified. The alkaline‐earth and transition metal chromates, molybdates and tungstates are mainly anhydrous.The alkaline‐earth and transition metal carbonates, orthophosphates, orthoarsenates, sulphates, selenates, bromates and iodates show mixed character. The precipitated barium, some strontium, lead(II) and mercury(II) salts are anhydrous: many of the other salts are precipitated as hydrates and the hydration numbers generally increase from one‐half to three with decrease in the cation radius.All the alkaline‐earth and transition metal oxalates (except lead oxalate) are precipitated as hydrates (below 100 °C). The hydration numbers at ambient temperatures generally increase from two to three‐four but there is no clear inverse variation with cation radius.These results are explained by Johnson's thermodynamic treatment for the free energies of solution and precipitation (and crystallisation) of ionic salts.
Native Point Defects and Nonstoichiometry in GaAs (I). Homogeneity Region of Gallium Arsenide
Authors: Morozov A. N. , Bublik V. T. , Morozova O. Yu. 
Published: January 2007

AbstractHomogeneity region and the concentration of dominant native point defects along its boundary are calculated by the method of quasichemical reactions with the use of experimental data on the structure type of solid solutions formed by the components in GaAs. The entropy and enthalpy of the formation of dominant native point defects in GaAs are obtained. Temperature ranges of the formation of microdefects‐finely dispersed Ga and As precipitates are considered.
Electrical Properties of Large‐grain Polycrystalline GaP
Authors: Siegel W. , Kühnel G. 
Published: January 2007

AbstractI–U and I–T measurements have been performed on large‐grain polyerystalline p‐GaP grown by the SSD method or synthesized in a high‐pressure autoclave. There exists a clear correlation between these characteristics and those of corresponding bierystals from which it can be concluded on a strongly unequal division of the applied voltage on both depletion regions of the grain boundaries. On the other hand I–U characteristics of polysilicon mostly are described by a sinh‐behaviour which supposes an equal division of the voltage. These differences are discussed. The I–U characteristics of the polycrystalline GaP at room temperature are governed by thermionie emission and thermionic field emission whereas at low temperatures (and high voltages) tunneling dominates. At high temperatures the influence of grain boundaries disappears.
Growth Mechanism in Atomic Layer Epitaxy (I) Re‐evaporation of Cd and Te from CdTe(111) Surfaces Monitored by Auger Electron Spectroscopy
Authors: Herman M. A. , Jylhä O. , Pessa M. 
Published: January 2007

AbstractThe mechanism of atomic layer epitaxy (ALE) of cadmium telluride has been studied. Auger electron spectroscopy is used to measure the isothermal re‐evaporation rates of elemental Cd and Te deposits on the (111)A and (111)B surfaces of CdTe substrates. The results include an observation that the sticking coefficients of Cd and Te are smaller than unity at the growth temperatures typical of CdTe ALE. After desorption the substrates are left partially covered: 35% by a Cd overlayer on the (111)B surface and 72% by Te on the (111)A surface. The re‐evaporation rates of Cd and Te experience a drastic change near the substrate‐deposit interface. These rates appear two orders of magnitude smaller than those of bulk‐like amorphous Cd and Te solids. The activation energies for reevaporation of the near‐interface layer region are estimated to be: 1.5 eV for Te on the (111)A face, 1.0 eV for Te on (111)B and 0.5 eV for Cd on (111)B. It has also been shown that AES can be used to identify the polarity of the CdTe(111) surfaces. The relative difference in peak‐to‐peak intensity ratios of Cd MNN to Te MNN for (111)A and (111)B is (11 ± 2)%.
Effect of Particle Size on the Ice Nucleating Ability of AgIAgBrCuI System
Authors: Palanisamy M. , Thangaraj K. , Gobinathan R. , Ramasamy P. 
Published: January 2007

AbstractThe effect of particle size on the ice nucleating behaviour of AgI‐AgBr‐CuI system has been studied for the first time. Six samples of different molar ratios and five sizes in each sample are considered in the present study. It is found that the nucleation temperature is the highest for particle size in the range of 60 ± 5um.
Native Point Defects and Nonstoichiometry in GaAs (II) Mechanism of Formation and Degradation of Semiinsulating Properties of Undoped Gallium Arsenide Crystals
Authors: Morozov A. N. , Bublik V. T. , Yu. Morozova O. 
Published: January 2007

AbstractThe nature of the main electron trap, EL2, in undoped semiinsulating GaAs crystals have been studied both qualitatively and quantitatively. It has been shown that point defects which, most probably, are responsible for the EL2 level are antisite AsGa defects or (AsiVGs) complexes which are indistinguishable from the thermodynamic standpoint. The enthalpy and entropy of AsGa formation according to the reaction AsAs + VGa ⇄ AsGa + VAs are equal to 0.5 eV and −7k, respectively.
Polytypism of Pb‐doped Single Crystals of Cadmium Iodide
Authors: Tyagi U. P. , Trigunayat G. C. 
Published: January 2007

AbstractThe zone refining technique has been used both for the purification of cadmium iodide and for the growth of lead‐doped single crystals of cadmium iodide. The as‐grown crystals when studied by X‐ray diffraction show exclusive presence of the most common polytype 4H. The hexagonal plate‐shaped crystals of the doped material, grown from aqueous solution, show polytypism, but of a different nature than the crystals of pure cadmium iodide. The results have been discussed.
Investigation of the Influence of Grinding on Regions near the Surface of Steel by Ultrasonic Surface Waves
Authors: Schneider D. , Herrmann K. , Brenner B. , Schläfer D. , Winderlich B. 
Published: January 2007

AbstractThe applicability of surface wave velocity measurements as a nondestructive test method to investigations of deformation layers with preferred orientations and residual stresses has been examined at steel C70W2. The residual stresses in various directions parallel to the surface have been detected from changes of velocity caused by a stress‐free annealing. From the anisotropy and the frequency dependence of velocity the existence of a surface layer with preferred orientations has been deduced and such characteristic parameters as preferred orientation and depth have been estimated. The results have been compared and completed with X‐ray texture investigations and data from Barkhausen noise.
Dislocation Etch Studies on Diammonium Hydrogen Citrate Single Crystals
Authors: George Joy , Peter George 
Published: January 2007

AbstractDiammonium Hydrogen Citrate single crystals have been grown from aqueous solution. The etch technique for defect studies is applied to these crystals. Propionic acid is shown to be a reliable etchant capable of bringing out dislocations intersecting the (001) face. Various other interesting features observed during etching are also presented and discussed.
Growth Mechanism in Atomic Layer Epitaxy (II). A Model of the Growth Process of CdTe on CdTe (111) Substrates
Authors: Herman M. A. , Jylhä O. , Pessa M. 
Published: January 2007

AbstractA realistic model of CdTe growth by atomic layer epitaxy (ALE) has been proposed. This model is based on experimental studies concerning the isothermal re‐evaporation rates of elemental Cd and Te deposits on the (lll)A and (lll)B surfaces of CdTe substrates, on a study of surface morphology and crystal structure of CdTe single crystal overlayers grown by ALE on CdTe(lll)B substrates under various crystallization conditions as well as on the existing theories related to the interaction of thermally activated atoms or molecules with hot solid surfaces.This model includes: (i) an existence of transition layers of both Cd and Te2 species, intermediate between a chemisorbed and a bulk‐like film, which create reaction zones 3–4 monolayers thick near the substrate surface, and (ii) partial re‐evaporation of the first, chemisorbed monolayer of the deposited constituent elements.
The Stochastic Theory of the Solidification of Binary Systems
Authors: Chvoj Z. 
Published: January 2007

AbstractThe stochastic theory was applied to the description of the solidification of binary systems. This theory is suitable for the studying of the dependence of kinetic phase diagrams on the technological conditions. The general relations between the concentrations of the liquid and the solid phases and between the rate of the solidification and the thermodynamic potentials of both phases are presented. In the case the stationary solidification of the binary systems our results are compared with the results published in the previous papers. The dependences of the kinetic phase diagrams on the growth rate or on the diffusion are in a good agreement with the Monte‐Carlo calculations.
Influence of γ‐Irradiation on Some Properties of NaCl:Eu++ Crystals (II). Colourability
Authors: Suszyńska M. , Opyrchal H. , Nierzewski K. D. , Macalik B. , Gubański A. 
Published: January 2007

AbstractThe room temperature colouration process of NaCl:Eu++ crystals strongly depends on both the dopant concentration, represented by the absorption coefficient α(eg), and the dopant dispersion state as well.It has been found that within the UV spectral range either some V‐type absorption bands appear or only the background absorption increases. For heavily irradiated crystals the clustering of halogen‐interstitial results in the formation of dislocation loops.In dependence of the dopant concentration the colourability of as received crystals is either larger (α(eg) ⪅, or smaller (α(eg) ⪆ −1) of that characteristic of the solution treated ones. The difference in the effectiveness of the halogen‐interstitials trapping‐process has been explained in terms of the various structure and/or composition of the europium‐related aggregates and/or precipitates.
Intercalation and Graphitizability of Electrode Cokes
Authors: Preiss H. , Lunkenheimer Ch. , Nissel U. 
Published: January 2007

AbstractExperimental results show in case of intercalation by SbCl5, CrO3 and Br2 the influence of the degree of perfection and size of graphite crystals on synthesis, intercalant distribution and stage disordering of intercalation compounds. High temperature treatment of electrode cokes improves steeply the ability of intercalation by SbCl5 and Br2 between 1900 and 2000 °C. A gradual increase of intercalated CrO3 with temperature have been found in cokes annealed between 2000 and 2800 °C. By means of CrO3‐intercalation a distinction of graphitized cokes is possible. Filling of galleries between carbon layers by CrO3 have been only completed in crystals of natural graphite with low flake diameter. EPMA showed CrO3‐intercalation in large crystals only in the prismatic edge area. SbCl5‐intercalation exhibits an increase in stage disordering with decreasing degree of crystallite perfection and increasing degree of grinding of original graphites.
Doping of PbTe with Ga during Growth from the Vapour Phase
Authors: Möllmann K.‐P. , Siche D. , Zajnudinov S. 
Published: January 2007

AbstractIn the present paper a method for doping of PbTe with Ga during crystal growth from the vapour phase is presented. The galvanomagnetic and photoelectric properties of the produced material are compared with results of other techniques and the equivalence of these physical properties is proved. Furthermore a defect model of the build‐in mechanism of Ga in PbTe is shown.
General Method of Formulation and Crystal Growth of Ornamental Garnets
Authors: Petrosyan A. G. 
Published: January 2007

Abstract“Compositional” shift of spectral lines of Eu2+, Yb2+ and Zr3+ ions resulting from crystal field variation in e‐sites of the garnet lattice is considered with respect to the provision of a general method of formulation and crystal growth of ornamental material with colour smoothly changing from violet to red.
Autodoping of Epitaxial Silicon Layers (III). Theoretical Treatment of Lateral Autodoping
Authors: Kühne H. 
Published: January 2007

AbstractSolving dopants from the silicon surface into the volume during epitaxial layer growth is commonly described as a solution equilibrium, which forms an essential part of modelling intentional silicon doping. Above buried layers a so‐called redistribution autodoping causes the inversely directed process within an initial layer growth period. When the layer begins to grow, the dopants are not totally buried by the silicon deposited, but are partially swept towards the surface to develop the redistribution equilibrium. Above that part of the layer surface located above buried layers, simultaneously a certain dopant partial pressure is established. It gives rise to a vertical and lateral dopant transport by means of gas diffusion. The flow in lateral direction is considered the source of lateral autodoping. In the present paper a theoretical model of autodoping is developed and the layer deposition parameters are discussed with regard to minimizing autodoping effects.
Distribution of Cations and the Proton Location in Kaersutite
Authors: Jirák Z. , Pechar F. , Vratislav S. 
Published: January 2007

AbstractThe crystal of Kaersutite, (Na0.63K0.37Ca1.99) (Mg3.10Fe0.98Al0.51Mn0.01Ti055) (Si6.07Al1.93) (O, OH)24 from lecality Vlčí Hora – Bohemia was studied by powder neutron diffraction.The refinement of the crystal structure within space group C2/m gave cell dimensions a = 0.9863, b = 1.8040 and c = 0.5306 nm, β = 105° 28′, Z = 2. Protons were found to form bridges between two 03 ioxygens. (This location allows for the existence of proton per f.u. in maximum). The actual population was refined to 0.8. The occupation of the five eation sites was determined as follows: M 1 (0.60 Mg + 0.25 Ti + 0.10 Al + 0.05 Fe), M 2 (0.50 Mg + 0.35 Fe + 0.15 Al), M 3 (0.8 Mg + p.2 Fe), M 4 (Ca) and A (Na, K).
Micro Non‐Homogeneity Studies in Tin Telluride Synthesized by a Low‐Temperature Iodide Method
Authors: Assenov R. , Moshnikov V. A. , Yaskov D. A. 
Published: January 2007

AbstractThe micro non‐homogeneity of SnTe samples obtained by a low‐temperature iodide method was studied by means of an X‐ray spectral microanalyser Cameca MS‐46. The composition of the microprecipitates was studied, as well as the possible causes for their formation in the process of obtaining the material. The paper shows the favourable prospects of using a SnI2 solvent obtained in advance for synthesizing SnTe.
Investigation of Optical Properties of YAlO3Pr3+ Single Crystals
Authors: Butaeva T. I. , Kaminskii A. A. , Ovanesyan K. L. , Petrosyan A. G. 
Published: January 2007

AbstractColour centers in YAlO3:Pr3+ crystals originating under xenon lamp or y–radiation and oxidizing annealing are considered. The nature of colour centers under these treatments is similar in nominally pure and Pr3+ containing crystals but the intensity of induced absorption lines is higher in activated crystals which assumably is associated with valent transitions of Pr ions.
The Properties of Undoped InP and GaP Bulk Crystals Prepared by Floating Zone Melting
Authors: Popov A. 
Published: January 2007

AbstractUndoped GaP and InP crystals which are produced by floating zone melting without a crucible were investigated. The background concentration was 1015cm−3 after several passages of the molten zone. The fundamental residual impurities are carbon and silicon penetrating into the crystals during the crystallization process. After purification, the electron mobility of GaP was 200 cm2/V. s, and for InP – 4000 cm2/Vs. The compensation decreased to 20%. A very effective purification was observed with respect to the carbon atoms, but for silicon this result is observed only after several passages of the molten zone.GaP and InP are basic materials for optoelectronic devices and it is important to investigate the possibility for production of pure bulk crystals. A proper method for this aim is the floating zone melting, where the crucible effect is removed and the influence of residual impurities is observed. In this work the influence of the number of floating zone passages on the electrical and luminescence properties of InP and GAP bulk crystals has been investigated.
Application Fields of ANOF Layers and Composites
Authors: Kurze P. , Krysmann W. , Schneider H. G. 
Published: January 2007

AbstractAnodic oxidation by spark discharge (ANOF) produces e.g. Al2O3 layers containing up to 25% α‐Al2O3 on the average if carried out on Al (Kurze et al. (1) and corresponding oxide layers with special outstanding properties on other barrier layer forming metals esp. Ta, Ti, Zr, Nb(Cb) (Kurze) et al. (2), (3), (4); Schneider (1), (2)). There is a wide field of application possibilities of such layers and composites of them with the bearing metals and other materials, e.g. in the fields of electrical engineering, electronics, medicine and vacuum engineering etc. This is the last one of three general ANOF papers published in this journal (Krysmann et al.; Dittrich et al.).
Elimination of Texture Influence in Quantitative Phase Analysis of Boron Nitride Samples
Authors: Černy R. , Šíichová H. 
Published: January 2007

AbstractA simple method of texture influence elimination in quantitative phase analysis of boron nitride samples is presented. The method is applicable for the compounds with hexagonal symmetry. The range of validity is discussed and the application in study of phase transitions in boron nitride samples is demonstrated.
Gel growth and X‐ray studies of single crystals in the mixed system KDP:ADP
Authors: Mohanlal S. K. , Baskaran R. 
Published: January 2007

AbstractCrystals of KDP and ADP and of the mixed system KDP:ADP are grown by gel technique resulting in good quality single crystals. The lattice parameters and densities of the mixed crystals show a linear dependence on composition in accordance to Vegard's Rule.
Coloured ANOF layers on aluminium
Authors: Kurze P. , Krysmann W. , Schreckenbach J. , Schwarz Th. , Rabending K. 
Published: January 2007

AbstractBy addition of metal salts to a basic electrolyte as colouring components coloured ANOF layers can be produced. The colour shades of such layers are dependent on concentration and deposition parameters. Two application examples of coloured ANOF layers are demonstrated.
Defect generation on mechanical surface defects before and after the oxidation (I). TEM investigations on the nucleation of oxidation stacking faults at mechanically induced weak surface defects
Authors: Morgenstern G. , Weidner G. 
Published: January 2007

AbstractIn order to obtain information on the nucleation mechanism of oxidation stacking faults, mechanically induced weak surface defects as simulated by low‐load scratches were investigated with TEM before and after a short‐time wet oxidation at 1050 °C. The experimental results could not confirm the existing models which explain stacking fault nucleation by the splitting of complete dislocations. Rather it was found that clusters of silicon interstitials are generated due to strong local compression during scratching, which then act as nuclei for stacking faults in the subsequent oxydation process.
Morphological features of synthetic crystals of As2Se3
Authors: Kothiyal G. P. , Ghosh B. 
Published: January 2007

AbstractScanning electron microscope (SEM) studies have been carried out on vapour grown arsenic triselenide platelet crystals and whiskers grown under argon and normal air ambients. The crystal morphology and microstructure were found similar in both types of crystals. While investigating the microstructure the layered structure of these crystals could be discerned under SEM. Layers with average thickness of 2–2.5 μm could be distinctly observed for the first time in As2Se3 crystals. This might be an important observation.
Crystallization of fatty acid (C16H32O2) from short‐chain hydrocarbon (C6H14)
Authors: Prasad P. B. V. , Sato K. 
Published: January 2007

AbstractA strong evidence for the occurrence of palmitic acid in highly fibrous form, when crystallized in presence of linear chain hydrocarbon, is obtained by crystallizing palmitic acid from n‐hexane solutions, by the evaporation of solvent at high rate of evaporation.
Defect generation on mechanically surface defects before and after the oxidation (II). Dislocation generation at cracks
Authors: Weidner G. , Morgenstern G. 
Published: January 2007

AbstractThe generation of crystal defects at residual cracks due to a wet oxidation of chemically mechanically polished silicon wafers at 1100 °C was investigated. It was found that the nucleation of oxidation stacking faults at these elastic cracks is impeded as compared to the regions between the cracks. However, extended dislocations, dislocation dipoles, certain stacking faults, and precipitates are generated at such cracks. These crystal defects and the crack itself impede the nucleation of oxidation stacking faults at the crack, as they locally reduce the excess interstitials at the oxidation front.