bluuebunny/crossref_metadata_2025_split huggingface dataset:
Thin-Film-Edge-Induced Stresses in Substrates
Authors: Wong S.P. , Peng H.J. , Zhao Shounan 
Published: April 2011

ABSTRACTWe have obtained an analytic solution of linear elasticity for the stress distribution under a thin film edge in isotropic substrates of finite thickness and of infinite extent in the other two directions. The following boundary conditions are considered. At the film/substrate interface and the free surfaces at the top and bottom of the substrate, the normal stress component vanishes. Far from the film edge on the side without the film, all stress components are zero. Far from the film edge under the film, the stress distribution is in accordance with that given by the bimetallic strip theory. Two examples of comparison between theory and experiments were given to demonstrate the validity of this solution. The infrared photoelastic stress fringe pattern obtained by a dark-field plane polariscope in a Si substrate under an oxide film edge was successfully reproduced. The calculated and experimental results of Raman-shift of Si under patterned CoSi2 line structures also showed good agreement with each other.
Field Emission from Novel Room Temperature Grown Carbon Based Multilayered Cathodes
Authors: Satyanarayana B.S. , Nishimura K. , Hiraki A. 
Published: April 2011

AbstractLow field electron emission from novel room temperature grown multilayered cold cathodes were studied. The cathodes consisted of a layer of nanocrystalline diamond and a layer of nanocluster carbon films. The nanocrystalline diamond was first coated on to the substrate. The nanocluster carbon films and the tetrahedral amorphous carbon films were then deposited on the nanocrystalline diamond coated substrates using the cathodic arc process at room temperature. The heterostructured microcathodes were observed to exhibit electron emission currents of 1µA/cm2 at fields as low as 1 V/µm. The effect of the nanoseeded diamond size and concentration and the properties of different nanocluster carbon films on emission characteristics is presented.
Trends in Microelectronic Systems Integration: From System on a Chip to System in a Package
Authors: Reuss Robert H. , Chalamala Babu R. , Thomas Simon , Chason Marc , Gamota Daniel , Danvir Janice 
Published: April 2011

AbstractThe continued shift towards the integration of diverse functions into single chips and chip assemblies requires a new vision in microelectronic systems integration. Over the last decade or so, there has been a tremendous push towards systems on chip (SoC) approach for increased functionality. While systems on a chip has received much deserved credit for the size and cost reduction of many products, a true system on a chip solution has not been practical for a number of applications. In some cases, this is simply an issue of chip size, in others material compatibility (Si and GaAs), in yet others electrical compatibility (high voltage, RF, analog, with digital) and in some others the overall cost of integration on silicon, even if technically feasible. The need to combine diverse materials and technologies to achieve increased functionality with decreased size and weight, along with the ever present pressure for lower cost, has created the opportunity for new system level integration opportunities. Among the new concepts, system in a package (SiP) and system on a substrate (SoS) have received the most attention. System in a package is a natural extension of system on a chip concept. Currently, there are aggressive programs to develop SiP capabilities to allow rapid, cost effective design and fabrication of subsystem level packages. System on a substrate is an emerging concept based on the integration of technologies in a wide area of electronics. SoS will take the next step to the full system level (e.g. a monolithic radio). However, there is another important concept that seeks the same objective of system-level integration, but with a different set of drivers. In situations where the product is required to be a certain size (e.g. a display or a smart card), further size reductions of the components is no longer productive. This creates the opportunity for alternative technologies such as thin film transistors and plastic substrates. Integration of these technologies offers the potential for significant cost savings because of lower manufacturing costs, and light weight, wearable, flexible products by elimination of today's rigid substrates. Such technologies not only offer new capabilities, but also change the basic premise of the electronics industry. We could move from the microelectronics to the macroelectronics era. In this paper, we will present an overview of this diverse and emerging technology.
Silicide Formation by Pulsed Excimer Laser Annealing
Authors: Lew Connie , Thompson Michael O. 
Published: April 2011

AbstractSilicide formation may occur at the interface of metal and a-Si films upon annealing with a pulsed excimer laser (XeCl 308 nm; 30 ns). During laser-induced melting, the melt front reaches the Si/metal interface, where liquid phase kinetics allow reaction to occur to form a silicide, despite the <100 ns time-scale. It is thought that silicide reaction would occur if TM, metal ≍ TM, a-Si (1480 ± 50K). The a-Si/metal film stacks that have been investigated include a-Si/Al/Cr, a-Si/Ti, and a-Si/W on thermally oxidized Si. Samples were laser-annealed at varying energy densities in order to determine the onset of melt, and the fluence at which Si/metal interface reaction and film ablation occurs. Rutherford backscattering (RBS), optical inspection, cross-sectional scanning transmission electron microscopy (STEM), as well as parallel and serial electron energy loss spectroscopy (EELS) were used to analyze the films. For the a-Si/Al/Cr and a-Si/W films, no reaction is observed at the Si/metal interface. With a-Si/Ti, intermixing of Si and Ti at the interface is observed, as indicated by RBS and parallel EELS analysis. Laser annealing at higher fluences and further characterization is needed to determine if this mechanism does allow for silicide reaction to take place.
Low-Temperature Poly-Si TFT by Excimer Laser Annealing
Authors: Nishibe Tohru 
Published: April 2011

AbstractPoly-Si TFT-LCD has begun its way to an advanced display by integrating the driver circuits onto the glass substrate. Improvement of poly-Si TFT is essential in order to achieve value-added display where circuits for various functions are integrated on one substrate. This report the concept of poly-Si TFT display from present state to future scope, and required technologies for each generation. It will also focus on technologies such as crystallization and gate insulator formation at low temperature process.
Recent Progress in High Power Excimer Laser Development for Producing Next Generation Large-Area Electronic Devices
Authors: Demin A. , Vodchits V. , Eltzov A. , Kristoforov O. , Kirukhin Yu. , Vinokhodov A. , Borisov V. , Osmanov R. , Bragin I. , Vogler K. , Rebhan U. , Rahe M. , Stamm U. , Basting D. 
Published: April 2011

AbstractThis paper reviews the results of the development of high power (up to 1 kW), high energy (up to 10J) prototypes of excimer lasers that are of interest to meet expanding requirements of the electronic industry. Some experimental characteristics are presented for various excimer prototypes operating at the important wavelength of 308nm (XeCl). Keywords: Excimer laser, average power, output energy, annealing
Wafer Bonding of Diamond Films to Silicon for Silicon-on-Insulator Technology
Authors: Yushin Gleb N. , Wolter Scott D. , Kvit Alexander V. , Collazo Ramon , Prater John T. , Stoner Brian R. , Sitar Zlatko 
Published: April 2011

AbstractPolycrystalline diamond films previously grown on silicon were polished to an RMS roughness of 15 nm and bonded to the silicon in a dedicated ultrahigh vacuum bonding chamber. Successful bonding under a uniaxial mechanical stress of 32 MPa was observed at temperatures as low as 950°C. Scanning acoustic microscopy indicated complete bonding at fusion temperatures above 1150°C. Cross-sectional transmission electron microscopy later revealed a 30 nm thick intermediate amorphous layer consisting of silicon, carbon and oxygen.
C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure
Authors: Huang Shaoyun , Banerjee Souri , Oda Shunri 
Published: April 2011

AbstractWe prepared a SiO2/nanocrystalline Si (nc-Si)/SiO2 sandwich structure. A clear positive shift in C-V and G-V curves due to electrons trapped in nc-Si dots has been observed at room temperature. The peak in conductance around flat band condition indicates that a trap event had occurred where an electron is stored per nc-Si dot. A logarithmic charge loss function is found and this discharging process is independent of the thermal activation mechanism. The longer memory retention time and logarithmic charge loss in the dots are explained by a “built-in” electric field through the tunnel oxide, which varies with time, resulting in a variable tunneling probability. The electric repulsion induced by the built-in electric field hinders the discharging of electrons remained in the dots.
Fabrication of 3D Feed Horn Shape MEMS Antenna Array using MRPBI (Mirror Reflected Parallel Beam Illuminator) System with an Ultra-Slow-Rotated and Inclined X-Y-Z Stage
Authors: Park Jong-Yeon , Kim Kun-Tae , Moon Sung , Pak James Jungho 
Published: April 2011

AbstractA 3D Feed horn shape MEMS antenna has some attractive features for array application, which can be used to improve microbolometer performance. Since MEMS technology have been faced many difficulties to fabrication of 3D feed horn shape MEMS antenna array itself. The purpose of this paper is to propose a new fabrication method to realize a 3D feed horn shape MEMS antenna array using a MRPBI(Mirror Reflected Parallel Beam Illuminator) system with an ultra-slow-rotated and inclined x-y-z stage. A high-aspect-ratio 300 [.proportional]m sidewalls had been fabricated using SU-8 negative photo resist. It can be demonstrated to feasibility of realize 3D feed horn shape MEMS antenna array fabrication. In order to study the effect of this novel technique, the 3D feed horn shape MEMS antenna array had been simulated with HFSS(High Frequency Structure Simulator) tools and then compared with traditional 3D theoretical antenna models. As a result, it seems possible to use a 3D feed horn shape MEMS antenna at the tera hertz band to improve microbolometer performance and optical MEMS device fabrication.
Indentation Delamination and Indentation Fracture in ZnO/Si Systems
Authors: Huang Bin , Zhao Ming-Hao , Zhang Tong-Yi 
Published: April 2011

AbstractVickers indentation tests were carried out at room temperature with a microhardness tester on ZnO thin films deposited on (100) Si wafers. The films with thicknesses ranging from 0.202 to 1.535 νm were tested under indentation loads varying from 50 mN to 2.0 N. The experiments exhibited a film thickness dependent deformation behavior. When the film thickness is smaller than a critical value, only indentation-induced radical cracking occurred and for a given load, the radical crack size decreased with film thickness. On the other hand, indentation-induced delamination was observed if the film thickness was larger than the critical value. In this case, the radial crack, if induced, had a size smaller than the size of delamination or even smaller than the size of indentation impression. Under a same indentation load, the delamination size increased with the film thickness.
Tensile Test of Bulk- and Surface-Micromachined 0.1-νm Thick Silicon Film using Electrostatic Force Grip System
Authors: Tsuchiya Toshiyuki , Sakata Jiro , Shikida M. , Sato K. 
Published: April 2011

AbstractSingle-crystal silicon films of sub-micrometer thicknesses were tensile tested using a thin film tensile tester with an electrostatic force grip. The tester has been newly designed for this thin film. It uses a servo-controlled balance for small-force measurement with a resolution of less than 100 νN. The specimens were fabricated using bulk- and surface-micromachining starting with a SIMOX wafer, and an epi-SOI wafer. The bulk micromachined specimens were released from a wafer by anisotropic etching from the backside of the wafer. The specimen size was 0 to 500 νm long, 20 or 50 νm wide and 0.14 νm thick. The thinner specimens were fabricated by surface micromachining and dry release process using XeF2 and vapor HF etching to avoid stiction of the specimens. The size was 0 to 600 νm long, 1 to 20 νm wide and 0.05 νm thick. These wafers were (100) oriented and the loading axis of the specimen was <110>. The tensile strength of the bulk micromachined specimens ranged from 1.4 to 4.8 GPa for twelve samples and that of the surface micromachined specimens ranged from 1.0 to 6.8 GPa for seven samples.
Transport properties of Cr-patterned Yba2Cu3O7 thin films
Authors: Chopdekar Rajesh , Dale Darren , Suzuki Yuri 
Published: April 2011

ABSTRACTEpitaxial thin films of Yba2Cu3O7 (YBCO) have been deposited and patterned on (100) SrTiO3 and (110) NdGaO3 substrates. Wet etchants used in conventional photolithography react too quickly with YBCO thin films, resulting in undercutting of patterned structures. We have implemented a technique to pattern thin lines from films without wet or dry etching. Chromium is evaporated onto the substrates and subsequently patterned. YBCO is then deposited by pulsed laser deposition, which results in an epitaxial YBCO film on patterned areas and randomly oriented YBCO deposited on chromium. An annealing step is required for the chromium to diffuse through the undesired YBCO in order to render those sections insulating. YBCO lines patterned with this technique exhibit resistivity and critical temperatures similar to those of the unpatterned films. As we decrease the width of the YBCO lines, the effect of the edges, where there is chromium-reacted material, on transport becomes more pronounced. The resolution of the patterning technique and the profile of superconducting versus non-superconducting materials at the edges is presented.
Effects of Cation Substitution on the Thermoelectric Properties in Ca-Co-O
Authors: Matsubara Ichiro , Funahashi Ryoji , Shikano Masahiro , Sasaki Kei , Enomoto Hiroyuki 
Published: April 2011

ABSTRACTWe have prepared (Ca1−x−yMxBiy)3Co4Oz (M = Mg, Sr, and Ba) thin films by a combinatorial approach using a solution process. In the systems of (Ca1−x−yMxBiy)3Co4Oz (M = Mg, Sr, and Ba), solid solution range was determined to be × < 0.8 (M = Sr, y = 0), x < 1.0 (M = Mg, y = 0), x = 0.0 (M = Ba, y = 0), and x < 0.4 (M = Bi, x = 0). No solid solution range was obtained for the substitution of Ba for Ca site. The in-plane compressive stress in the CoO2 sublattice is controllable by the cation substitution for Ca in the (Ca2CoO3) sublattice. With increasing in-plane stress, the magnitude of thermoelectric power and resistivity increased.
Thermal and Electrical Properties of Czochralski Grown GeSi Single Crystals
Authors: Yonenaga Ichiro , Akashi Takaya , Goto Takashi 
Published: April 2011

ABSTRACTSingle crystals of Ge1−xSix alloys in the composition range 0 < x < 1 non-doped and doped with boron, gallium, and phosphorus as an impurity were grown by the Czochralski method. The measurements of the thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (α) of the grown crystals were performed in the temperature range 300 – 1000 K. The thermal conductivityκ shows a minimum (κ ∼ 3.5 W/K.m) around the Si content x = 0.5 - 0.7, which can be explained by the phonon scattering due to a distortion of the crystal lattice. The Seebeck coefficientα was 300 - 400 μV/K at 600°C in the impurity-doped GeSi alloys. An ∣α∣ vs ln (σ) plot of highly impurity-doped GeSi alloys obeys a linear relation. The slope of the straight line is 1.2 k/e, indicating the coorporation of the charged impurity into the alloy scattering mechanism.
Thermoelectric Properties of Bi-Sb-Te-X Compounds Prepared by MA-PDS Method
Authors: Park Yong-Ho , Xue-Dong Liu 
Published: April 2011

ABSTRACTA great potential for further improving the room-temperature figure of merit (Z) has been identified by dispersing a small fraction of Ag in the (Bi0.25Sb0.75)2Te3 alloy. The maximum Z of 3.41×10−3K−1, 17% higher than that of the unadded, is attained at 0.02wt% Ag. Addition of BN, either alone or in combination with Ag, however, does not generate a favorable figure of merit.
Different Mechanisms Leading to Superhard Coatings: Stable Nanocomposites and High Biaxial Compressive Stress
Authors: Veprek S. , Karvankova P. , Prochazka J. , Männling H. 
Published: April 2011

AbstractA strong enhancement of the hardness above 40 GPa in thin coatings can be achieved either by the formation of a suitable nanostructure (heterostructures and nanocomposites) or by a large biaxial compressive stress of ≥ 5 GPa. Superhard and thermally fairly stable nanocomposites, such as nc-TiN/a-Si3N4, nc-TiN/a-Si3N4/a-TiSi2, nc-(Ti1-xAlx)N/a-Si3N4 retain their hardness after annealing to 900-1100°C whereas coatings with a high stress, such as HfB2, CrxN/Ni, ZrN/Ni and others soften to ≤ 20 GPa already after their annealing to 400-500°C due to the relaxation of that stress.
A Novel Silicon-Carbon Precursor for Oligomer Chemical Vapor Deposition of Silicon Carbide for Harsh Environmental Applications
Authors: Futschik Ulrike , Efstathiadis Harry , Castracane James , Kaloyeros Alain E. , Macdonald Leo , Hayes Susan , Fountzoulas Costas 
Published: April 2011

AbstractSilicon carbide (SiC) films have been successfully deposited on various substrates by oligomer thermal chemical vapor deposition (OTCVD) from a novel, halogen free, oligomer precursor family of polysilyenemethylenes (PSMs) called SP-4000. The high quality films were grown at substrate temperatures in the range of 620°C to 850°C and at process pressures in the range of 1 - 200Torr. SP-4000 is a silicon carbide precursor with formula [-SiH2-CH2-]n, n=2-8, composed of an alternating silicon and carbon backbone with hydrogen side groups. Depositions on Si and graphite substrates yielded SiC films with Si/C ratios in the range 1.1 to 1.2 and thicknesses in the range 0.3 to 50μm.Structural and chemical characterizations were performed by Auger electron spectroscopy (AES), x-ray diffraction (XRD), nuclear reaction analysis (NRA), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM).The SiC coatings deposited at substrate temperatures below 1100°C were found to be amorphous. Ex-situ, post deposition annealing in inert gas ambient above 1100°C converted the SiC films to a polycrystalline phase.
Characterization of High Alumina Refractory Ceramics Treated with Combined Two Laser Surface Processing
Authors: Bernstein Johanna R. , Triantafyllidis Dimitris , Li Lin , Stott F. Howard 
Published: April 2011

AbstractAlumina-based refractory materials are extensively used in high-temperature industrial applications, such as for linings in waste and other incinerators. The existence of porosity and material inhomogeneities can promote chemical degradation due to molten slag penetration, while impacting solid or liquid feedstock can cause erosive-wear damage. Previous research has successfully used single laser energy sources to alter the surface properties of similar ceramics, with emphasis on sealing porosity and enhancing degradation resistance. However, this process has resulted in some solidification cracking at the surface due to large temperature gradients developed during processing. In the present, ongoing work, the surface of the refractory ceramic is modified by combining two laser energy sources to control the thermal gradients and cooling rates, with the objective of eliminating crack formation. The surface morphology and microstructures of the laser-treated areas are analyzed. This paper presents some initial results from the programme.
Fabrication and Nanostructured Surface Layers of Al Alloy by Surface Vibrational Mechanical Attrition
Authors: Wu X. , Hong Y. , Lu J. , Lu K. 
Published: April 2011

AbstractNanograins were introduced into the surface layers of an Al-alloy during surface vibrational mechanical attrition. Transmission electron microscopy revealed that microstructures developed with an increase in strain, in the following sequence, i.e., lamellar microbands of elongated subgrains, equiaxed submicro-, and nano-grains respectively. The grain subdivision into the subgrains was found to be the main mechanism responsible for grain refinement. The simultaneous evolution of high boundary misorientations was ascribed to the boundary rotation for accommodating further strains. Results showed that the grains could refine remarkably into the nanometer regime (<100 nm) within the outer surface of the layer. The depth of the nanocrystal layers increased and the grain size decreased with the extension of processing time. The nanocrystal layers evidenced an increase in hardness.
Effect of Pre-Oxidation on The Oxidation Behavior of Ti-2Al-2.5Zr Alloy at 300°C in An Alkaline Steam
Authors: Zu X. T. , Li Y. L. , Zeng G.T. , Huang X. Q. , Wang Z.G. , Lin L. B. , Feng X. D. 
Published: April 2011

AbstractThe long-term oxidation behavior on a Ti-2Al-2.5Zr alloy with and without pre-oxidation oxidized at 300 in an alkaline steam for about 13000h were studied. Some of the samples were subjected to 400°C deionized water steam at a pressure of 10MPa for 72 hours for pre-oxidation. A comparison study has been carried out between the pre-oxidized and without pre-oxidized Ti-2Al-2.5Zr to determine the influence of pre-oxidation upon the properties of oxidation resistance. The result analysis showed that the oxide scales on the Ti-2Al-2.5Zr alloy consisted of Al2TiO5, TiO2, Ti3O5, Ti2O3, Al2O3 and TiO. The oxidation kinetics showed that the weight gains of the pre-oxidized samples were much less than that of the without pre-oxidized samples. The AES results showed that the whole thickness of the pre-oxidized sample thinner than that of the without pre-oxidized one, in contrast the pattern for the stable oxide scale was reversed, i.e. the pre-oxidized sample was much thicker. It is thought that pre-oxidation is an effective method to enhance the oxidation resistance of Ti-2Al-2.5Zr.
Synthesis and Photovoltaic Characterization of Fullerene – Oligo(phenylene ethynylene) Hybrids
Authors: Tsamouras Dimitris , Nierengarten Jean-François , Gu Tao , Krasnikov Victor , Hadziioannou Georges 
Published: April 2011

ABSTRACTAsymmetrically substituted oligo(phenylene ethynylene) (OPE) derivatives have been prepared by a new iterative method and attached to C60 molecules by a 1,3-dipolar cycloaddition of the azomethine ylides generated in situ from the corresponding aldehydes and sarcosine. The molecules obtained are suitable for the fabrication of photovoltaic devices based on interpenetrating networks of donors and acceptors, with a characteristic length scale of the network topology smaller than the exciton diffusion length. We have constructed a number of photovoltaic cells incorporating the C60-OPEs as the active material between two energetically asymmetric electrode contacts. The device performance has been examined and the functional characteristics have been determined too. These seem to depend systematically on the nature of the attached end-group and on the length of the donating moiety.