bluuebunny/crossref_metadata_2025_split huggingface dataset:
Molecular targeted therapies for diffuse large B‐cell lymphoma based on apoptosis profiles
Authors: Cillessen Saskia AGM , Meijer Chris JLM , Notoya Michitaka , Ossenkoppele Gert J , Oudejans Joost J 
Published: December 2009

AbstractDiffuse large B‐cell lymphoma (DLBCL) is the most common type of adult non‐Hodgkin lymphoma and is treated with chemotherapy in combination with rituximab. Despite this aggressive therapy, the disease is fatal in 30–40% of patients. Inhibition of the apoptosis signalling pathways is strongly related to response to chemotherapy and eventual clinical outcome. In order to survive, lymphoma cells depend on disruption of the apoptosis pathway by mutations in apoptosis inducing genes or by continuous expression of anti‐apoptotic proteins. The development of molecules targeting these apoptosis inhibitors provides a very promising opportunity to specifically target tumour cells without toxicity to non‐malignant cells in DLBCL patients. Sensitivity for most of these antagonists can be predicted based on biological markers, suggesting the possibility of pre‐defining patients who will most likely benefit from these targeted therapies. Experimental therapies aimed at restoring the upstream apoptosis pathway or targeting apoptosis inhibitors are currently being tested in clinical trials and are expected to be effective particularly in chemotherapy‐refractory DLBCL, providing hope for patients who are refractory to current therapies. Copyright © 2009 Pathological Society of Great Britain and Ireland. Published by John Wiley & Sons, Ltd.
The role of the polyol pathway in acute kidney injury caused by hindlimb ischaemia in mice
Authors: Yagihashi Soroku , Mizukami Hiroki , Ogasawara Saori , Yamagishi Shin‐Ichiro , Nukada Hitoshi , Kato Noriaki , Hibi Chihiro , Chung Sookja , Chung Stephen 
Published: December 2009

AbstractThe polyol pathway, a collateral glycolytic process, previously considered to be active in high glucose milieu, has recently been proposed to play a crucial role in ischaemia/reperfusion tissue injury. In this study, we explored the role of the polyol pathway in acute kidney injury (AKI), a life‐threatening condition, caused by hindlimb ischaemia, and determined if inhibition of the polyol pathway by aldose reductase (AR) inhibitor is beneficial for this serious disorder. Mice 8 weeks of age rendered hindlimb ischaemic for 3 h by the clipping of major supporting arteries revealed marked muscle necrosis with accumulation of sorbitol and fructose in ischaemic muscles. Serum concentrations of blood urea nitrogen (BUN), creatinine phosphokinase (CPK), creatinine, tumour necrosis factor (TNF)‐α as well as interleukin (IL)‐6 were all elevated in these mice. Treatment with AR inhibitor (ARI) effectively suppressed muscle necrosis and accompanying inflammatory reactions and prevented renal failure. Similar to ARI‐treated mice, AR‐deficient mice were protected from severe ischaemic limb injury and renal failure, showing only modest muscle necrosis and significant suppression of serum markers of renal failure and inflammation. Thus, these findings suggest that the polyol pathway is implicated in AKI caused by ischaemic limb injury and that AR may be a potential therapeutic target for this condition. Copyright © 2009 Pathological Society of Great Britain and Ireland. Published by John Wiley & Sons, Ltd.
The DAFNE Collaborative. Experiences of developing a nationally delivered evidence‐based, quality‐assured programme for people with type 1 diabetes
Authors: Oliver L , Thompson G 
Published: December 2009

AbstractThis article describes the process by which the DAFNE (Dose Adjustment For Normal Eating) Collaborative developed and maintained the integrity of the programme during the national roll‐out across diabetes services. The costs of maintaining the integrity and quality of the programme account for a significant proportion of the cost of DAFNE; however, the cost per patient is now almost half that of previously quoted figures. Copyright © 2009 John Wiley & Sons.
Scleredema diabeticorum: an under recognised complication?
Authors: Ghosh S , Shetty S , Elhadd T , Hardie R , Nairn ER , Malik I , Collier A 
Published: December 2009

AbstractWe report the case of a 41‐year‐old man with type 1 diabetes who presented with scleredema diabeticorum.Scleredema diabeticorum is an uncommon skin condition. It is a poorly known (recognised) complication of diabetes.The aetiopathogenesis of the clinical condition is not well understood. No single form of treatment has been proven to be consistently beneficial. In most cases it is a self‐limiting, benign disease. Optimisation of metabolic control and physiotherapy are recommended for all cases. Copyright © 2009 John Wiley & Sons.
Polyaniline–silver composites prepared by the oxidation of aniline with silver nitrate in acetic acid solutions
Authors: Blinova Natalia V , Bober Patrycja , Hromádková Jiřina , Trchová Miroslava , Stejskal Jaroslav , Prokeš Jan 
Published: December 2009

AbstractThe reaction between two non‐conducting chemicals, aniline and silver nitrate, yields a composite of two conducting components, polyaniline and metallic silver. Such conducting polymer composites combine the electrical properties of metals and the materials properties of polymers. In the present study, aniline was oxidized with silver nitrate in solutions of acetic acid; in this context, aniline oligomers are often a major component of the oxidation products. An insoluble precipitate of silver acetate is also present in the samples. The optimization of reaction conditions with respect to aniline and acetic acid concentrations leads to a conductivity of the composite as high as 8000 S cm−1 at ca 70 wt% (ca 21 vol%) of silver. A sufficient concentration of acetic acid, as well as a time extending to several weeks, has to be provided for the successful polymerization of aniline. Polyaniline is present as nanotubes or nanobrushes composed of thin nanowires. The average size of the silver nanoparticles is 30–50 nm; silver nanowires are also observed. Copyright © 2009 Society of Chemical Industry
Trajectories of psychological distress among Chinese women diagnosed with breast cancer
Authors: Lam Wendy W. T. , Bonanno George A. , Mancini Anthony D. , Ho Samuel , Chan Miranda , Hung Wai Ka , Or Amy , Fielding Richard 
Published: December 2009

AbstractBackground: The distinct trajectories of psychological distress over the first year of the diagnosis with breast cancer (BC) and its determinants have not been explored.Methods: 285 of 405 Chinese women receiving surgery for BC were assessed at 5‐day, 1‐month, 4‐month, and 8‐month post‐surgery on measures of psychological distress, optimism, treatment decision‐making (TDM) difficulties, satisfaction with treatment outcome, satisfaction with medical consultation, and physical symptom distress. Latent growth mixture modelling identified trajectories of psychological response to BC. Multinominal logistic regression compared TDM difficulties, satisfaction with treatment outcome, satisfaction with medical consultation, optimism, and physical symptom distress, by distress pattern adjusted for age, education, employment status, and stage of disease.Results: Four distinct trajectories of distress were identified, namely, resilience (66%), chronic distress (15%), recovered (12%), and delayed‐recovery (7%). TDM difficulties, optimism, satisfaction with consultation, and physical symptom distress predicted distress trajectories. Psychologically resilient women had less physical symptom distress at early post‐surgery compared with women with other distress patterns. Compared with the resilient group, women in the recovered or chronic distress groups experienced greater TDM difficulties, whereas women in the delayed‐recovery group reported greater dissatisfaction with the initial medical consultation. Women in the chronic distress group reported greater pessimistic outlook.Conclusion: Optimism and better early post‐operative treatment outcomes predicted resilience to distress. Pre‐operative interventions helping women to establish a realistic expectation of treatment outcome may minimize disappointment with treatment outcome and resultant distress, whereas post‐operative rehabilitation should focus on symptom management. Copyright © 2009 John Wiley & Sons, Ltd.
Depression and sexual adjustment following breast cancer in low‐income Hispanic and non‐Hispanic White women
Authors: Christie Kysa M. , Meyerowitz Beth E. , Maly Rose C. 
Published: December 2009

AbstractObjective: Hispanics are the largest and fastest growing ethnic minority group in the United States and breast cancer is the most commonly diagnosed cancer in Hispanic women. However, Hispanics are underrepresented in the psychosocial breast cancer literature.Methods: This study included 677 low‐income women (425 Hispanic, 252 non‐Hispanic White) enrolled in the Medi‐Cal Breast and Cervical Cancer Treatment Program. Data were gathered through phone interviews conducted in English or Spanish 6 and 18 months following breast cancer diagnosis. We focus on three variables that the literature indicates are salient for breast cancer survivors: sexual function, body image and depression.Results: Results of an ANCOVA indicated worse sexual function for Hispanic women, even after controlling for significant covariates. Hispanics reported significantly less sexual desire, greater difficulty relaxing and enjoying sex, and greater difficulty becoming sexually aroused and having orgasms than non‐Hispanic White women. Both Hispanic and non‐Hispanic White women endorsed a lack of sexual desire more frequently than problems with sexual function. Body image did not differ between Hispanic and non‐Hispanic White women. In all, 38% of Hispanic and 48% of non‐Hispanic White women scored above cut‐off scores for depressive symptoms. While there was no ethnic difference in depressive symptoms, single women reported more depressive symptoms than partnered women.Conclusions: Findings suggest that low‐income breast cancer survivors may experience symptoms of depression more than a year following diagnosis, and that sexual dysfunction may be particularly salient for low‐income Hispanic women. Copyright © 2009 John Wiley & Sons, Ltd.
Preparation of Carbon Nanotube (CNT) Composites by Polymer Functionalized CNT under Plasma Treatment
Authors: Chen I‐Han , Wang Cheng‐Chien , Chen Chuh‐Yung 
Published: December 2009

AbstractThe present study presents a novel method for preparing multi‐walled carbon nanotubes (MWCNTs) grafted with polyacrylicnitrile (PAN) through the process of plasma‐induced grafting polymerization. After the plasma grafting process, the MWCNTs were converted into acrylicnitrile modified CNTs (MWCNTs‐g‐AN), which in reaction with hydroxylamine produced the aminated CNTs (MWCNTs‐g‐mAN). After the plasma modification process, X‐ray photoelectron spectroscopes (XPSs) of a high resolution were used to characterize the functional groups on the surface of the MWCNTs. In addition, observing the transmission electron microscopy (TEM) image reveals that a uniform polymer layer is grafted onto the surface of the MWCNTs and the functionalized CNTs showed a better dispersion than the pristine MWCNTs in epoxy resin. Moreover, the addition of a small quantity of the MWCNTs‐g‐mAN to the nanocomposites showed noticeable enhancements in their electrical conductivity.magnified image
Do we know the band gap of lithium niobate?
Authors: Thierfelder C. , Sanna S. , Schindlmayr Arno , Schmidt W. G. 
Published: December 2009

AbstractGiven the vast range of lithium niobate (LiNbO3) applications, the knowledge about its electronic and optical properties is surprisingly limited. The direct band gap of 3.7 eV for the ferroelectric phase – frequently cited in the literature – is concluded from optical experiments [1]. Recent theoretical investigations [2] show that the electronic band‐structure and optical properties are very sensitive to quasiparticle and electron‐hole attraction effects, which were included using the GW approximation for the electron self‐energy and the Bethe‐Salpeter equation respectively, both based on a model screening function. The calculated fundamental gap was found to be at least 1 eV larger than the experimental value. To resolve this discrepancy we performed first‐principles GW calculations for lithium niobate using the full‐potential linearized augmented plane‐wave (FLAPW) method [3]. Thereby we use the parameter‐free random phase approximation for a realistic description of the nonlocal and energydependent screening. This leads to a band gap of about 4.7 (4.2) eV for ferro(para)‐electric lithium niobate (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The role of a precursor state in thiophene chemisorption on Si(111)–7×7
Authors: Weymouth A. J. , Miwa R. H. , Srivastava G. P. , McLean A. B. 
Published: December 2009

AbstractThe adsorption of thiophene on Si(111)–7×7 has been studied with scanning tunneling microscopy (STM) and kinetic Monte Carlo (kMC) modelling. Previous experimental studies of this system clearly demonstrated that thiophene prefers to chemisorb on the faulted half of the 7×7 unit cell. The STM studies reported here concur with this and provide further information about thiophene site preference as a function of coverage. Additionally, an ab initio theoretical investigation of this system demonstrated that the occupancy of available adsorption sites could not be explained using equilibrium binding energies, as these were calculated to be the same for all experimentally identified adsorption sites (≈1.0 eV). To investigate the possibility that site selection is kinetically controlled, a kMC model was developed. This model places the molecule in a mobile precursor state, allowing the molecule to traverse the surface before chemisorbing. The kMC model was found to reproduce the STM data, providing compelling evidence that site occupancy in this system is indeed kinetically controlled at room temperature. Activation energy differences, for each the four unique chemisorption geometries, could be extracted from a fit of the kMC model predictions to the experimental data (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Influence of the magnetron power on the Er‐related photoluminescence of AlN:Er films prepared by magnetron sputtering
Authors: Hussain S. S. , Brien V. , Rinnert H. , Pigeat P. 
Published: December 2009

AbstractThe effect of magnetron power on the room temperature 1.54 μm infra‐red photoluminescence intensity of erbium doped AlN films grown by r.f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium doping levels (0.5 and 1.5 at%). The structural evolution of the crystallites as a function of the power is followed by transmission electron microscopy. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Raman scattering of InxAl1‐xN alloys with 0.2 < x < 0.9
Authors: Katsikini M. , Arvanitidis J. , Christofilos D. , Ves S. , Adikimenakis A. , Georgakilas A. 
Published: December 2009

AbstractInxAl1‐xN (0001) wurtzite layers with 0.2 < x < 0.9 that are grown by molecular beam epitaxy on AlN/Al2O3 templates are studied using Raman spectroscopy. In the high‐frequency part of the spectra (450‐850 cm‐1), the two EH2 modes (one AlN‐ and one InN‐like) and one A1(LO) are observed in the backscattering geometry. The three peaks shift towards higher frequencies as the Al concentration increases. In the low‐ frequency part, three peaks are also observed. The InN‐like EL2 mode is present in the whole composition range while the AlN‐like EL2 mode appears for x > 0.45. In the case of the Al rich samples, an additional broad feature appears. The Raman spectra are fitted using the spatial correlation model providing the extent of the phonon confinement imposed by the alloy potential fluctuations is estimated. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Evidence of excitonic transitions by angle‐resolved reflectivity for the determination of oscillator strengths in GaN/(Al,Ga)N quantum wells
Authors: Rakotonanahary G. , Aberra Guebrou S. , Lagarde D. , Natali F. , Reveret F. , Disseix P. , Leymarie J. , Leroux M. , Massies J. 
Published: December 2009

AbstractWe report on a study of the excitonic properties of GaN/AlxGa1‐xN quantum well samples using continuous‐wave reflectivity and photoluminescence measurements. Weak excitonic signals superposed to large oscillations resulting from the interferences in the buffer layers are highlighted by angle‐resolved reflectivity. The quantum well excitonic oscillator strength was determined from the fitting of the experimental spectra and the influence of aluminum concentration of the barrier was also investigated (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Growth of atomically smooth cubic AlN by molecular beam epitaxy
Authors: Schupp Thorsten , Rossbach Georg , Schley Pascal , Goldhahn Rüdiger , Lischka Klaus , As Donat Josef 
Published: December 2009

AbstractIn this work we present the growth of atomically flat c‐AlN layers (surface roughness 0.3 nm RMS) by plasma assisted molecular beam epitaxy (PAMBE) on 3C‐SiC. We develop a model for Al surface kinetics that correlates with RHEED intensity vs. time measurements. We show RHEED patterns and atomic force microscopy (AFM) scans emphasizing the quality of the layers.Ellipsometry yields the dielectric function of c‐AlN around the adsorption edge. The direct gap is obtained with 5.93 eV at room temperature, while the indirect one is below 5.3 eV (onset of adsorption) (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Thermal conductance of the AlN/Si and AlN/SiC interfaces calculated with taking into account the detailed phonon spectra of the materials and the interface conditions
Authors: Kazan M. , Pereira S. , Correia M. R. , Masri P. 
Published: December 2009

AbstractWe present a calculation of the thermal conductance (TC) of the interface between aluminium nitride (AlN) and silicon (Si) and that between AlN and silicon carbide (SiC) with taking into account the detailed phonon spectra of the materials, as obtained from first principles calculations, and the interface conditions. On the basis of the results obtained, we discuss the relation between the interface TC, the interface conditions, and the mismatches between the acoustic waves velocities and the phonon densities of states of the materials in contact. Our calculation method is expected to provide a reliable tool for thermal management strategy, independently from the substrate choice (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Thermal oxidation of lattice matched InAlN/GaN heterostructures
Authors: Alomari M. , Chuvilin A. , Toth L. , Pecz B. , Carlin J.‐F. , Grandjean N. , Gaquière C. , di Forte‐Poisson M.‐A. , Delage S. , Kohn E. 
Published: December 2009

AbstractIn this work we have investigated the thermal oxidation of thin InAlN/GaN heterostructures in their lattice matched configuration (83% Al) in oxygen atmosphere at 800 °C. TEM cross sections revealed a partially crystalline oxide with an initial oxidation rate of 0.37 nm/minute. MOS diodes fabricated using the thermal oxide as a gate dielectric showed an exponential drop in the gate leakage which scales with the square root of oxidation time indicating diffusion limited oxidation through the InAlN barrier. The effect of oxidation on the interfacial InAlN/GaN sheet charge density (NS) is correlated with a reduction of thickness for short oxidation times (up to 4 min) and an abrupt change in the surface potential for longer oxidation times. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Study of implantation‐induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications
Authors: Singh R. , Dadwal U. , Scholz R. , Moutanabbir O. , Christiansen S. , Gösele U. 
Published: December 2009

AbstractWe present an overview of the implantation‐induced blistering/exfoliation process in wide bandgap semiconductors such as GaN, AlN and ZnO. These semiconductors were implanted with 50 keV hydrogen ions at various fluences and subsequently annealed at higher temperatures up to 800 °C in order to trigger surface blistering. In the case of GaN and AlN, a detailed blistering kinetics investigation was also performed. Various techniques such as optical microscopy, atomic force microscopy, cross‐sectional transmission electron microscopy and stylus profilometry were used for the characterization of the implanted samples. In the case of room temperature implanted samples, it was observed that the damage band formed inside the samples was decorated with hydrogen filled nanovoids. These nanovoids served as precursors for the formation of two‐dimensional extended defects called nanocracks and microcracks upon annealing and eventually led to surface blistering or exfoliation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Indium implantation and annealing of GaN: Lattice damage and recovery
Authors: Katsikini M. , Arvanitidis J. , Ves S. , Paloura E. C. , Wendler E. , Wesch W. 
Published: December 2009

AbstractThe effect of Indium (In) implantation in n‐type GaN is studied using Raman spectroscopy and Rutherford backscattering (RBS). The RBS analysis reveals that the 700 keV In implantation results in the formation of a subsurface defective region that extends to a depth of 400 nm. An abrupt increase (∼93%) of the maximum defect concentration is observed for fluences in the range 1.5 and 5×1014 cm‐2. A further increase of the fluence to 5×1015 cm‐2 renders the implanted layer amorphous. In the Raman spectra recorded in the backscattering geometry only the E22 peak is resolved since the A1(LO) is completely damped due to plasmon ‐ phonon coupling. As the fluence increases, the characteristic sharp peaks of the as‐grown sample broaden due to relaxation of the q‐selection rules allowing phonons with q ≠ 0 to contribute in the Raman scattering. Furthermore, three additional broad peaks are detected in the implanted samples even after implantation with the fluence of 5×1013 cm‐2. They are ascribed to disorder activated Raman scattering or acoustic overtones (300 cm‐1, 420 cm‐1) and the formation of point defects (670 cm‐1), respectively. Rapid thermal annealing at 1000 °C causes partial recovery of the lattice. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The diurnal cycle of lower boundary‐layer wind in the West African monsoon
Authors: Abdou Kassimou , Parker Douglas J. , Brooks Barbara , Kalthoff Norbert , Lebel Thierry 
Published: December 2009

AbstractMeasurements of lower boundary‐layer winds collected from four Sonic Detection And Ranging (SODAR) systems during the African Monsoon Multidisciplinary Analysis (AMMA) are presented. The SODARs were located in a mesoscale network in the vicinity of Niamey, Niger, in the period 31 May to 17 August 2006; from this network 41 days of good measurements have been obtained from at least one of the SODARs, while there are several days in which two or more SODARs produced good simultaneous data. The average variation of the winds in the lower boundary layer is here presented, as a function of height and of time of day. The results confirm previous studies of the diurnal cycle of winds, and quantify the variation of this diurnal cycle with height at low altitudes. On many nights, a distinct nocturnal low‐level jet was observed, at 200–400 m altitude. In profiles averaged over all of the sample days, the peak wind shear was in the layer below 300 m, with the strongest wind shear from 0000 to 0600 UTC. In particular, the magnitude of low‐level wind shear, which is a significant hazard for aviation, is shown to be strongly dependent on time of day. Strong low‐level wind shear (more than 4 m s−1 per 100 m), was observed on more than 35% of days in the 0000–0300 UTC period. Copyright © 2009 Royal Meteorological Society