bluuebunny/crossref_metadata_2025_split huggingface dataset:
Versatile Applications of Ion Implanted Polymers
Authors: Giedd R.E. , Wang Y.Q. , Moss M.G. , Kaufmann J. 
Published: April 2011

AbstractIon beam implantation of polymers has been shown to modify electrical and mechanical properties near the surface of the material. A complete understanding of the mechanism of modification and type of microstructure remaining as a result of this process has not yet been achieved. In this paper, we will discuss how recent advances in our understanding of these fundamental mechanisms and material processing techniques has led to a number ot prototypical applications. Specifically, the fundamentals of using ion implanted polymers as high value, small geometry resistors, temperature, strain, and vacuum sensing materials and as protective surfaces in chemically reactive environments.
Proton Modification of Ultra High Molecular Weight Polyethylene to Promote Crosslinking for Enhanced Chemical and Physical Properties
Authors: Wilson J.F. , Liu J.R. , Romero-Borja F. , Chu W.K. 
Published: April 2011

AbstractCrosslinking onset was investigated for ultra high molecular weight polyethylene(UHMW-PE) implanted with 2.6 MeV H+ ions at low doses from 6×1011-3×1013 ions/cm2. Crosslinking in the near surface region(20–40μm) was determined from gel permeation chromatography(GPC) of 1,2,4 trichlorobenzene sol fractions and increased with dose. Fourier transform infrared spectroscopy(FTIR) showed irradiation resulted in increased free radicals confirmed from increased carbonyl groups. Hydrogen annealing after ion implantation resulted in 38–49% decrease in FTIR peak associated with carbonyl.
Chemical Reaction Between Polymers (Pc, Pmma, and Pet) and Oxygen Gas During Ar+ Irradiation
Authors: Park Sung-Chul , Jung Hyung-Jin , Koh Seok-Keun 
Published: April 2011

AbstractA surface of PC, PMMA, and PET samples irradiated with Ar+ ion of 1 keV energy with and without oxygen environment was investigated by contact angle measurement and x-ray photoelectron spectroscopy (XPS) spectra. Contact angle of water droplets on the irradiated surface of the polymers decreased and remained almost constant with increasing Ar+ irradiation without oxygen. However, when the polymers were irradiated under oxygen environment, the contact angle markedly decreased with increasing ion dose upto 1016 ions/cm2. XPS results show that, after Ar+ irradiation under oxygen, hydrophilic groups were developed on PC, PMMA, and PET. The peak ratio (O/C) of PET irradiated without oxygen decreased with increasing ion dose, whereas that of PET irradiated under oxygen increased with ion dose upto 1016 ions/cm2
Nanocrystals and Quantum Dots Formed by High-Dose Ion Implantation
Authors: White C.W. , Budai J. D. , Zhu J. G. , Withrow S. P. , Hembree D. M. , Henderson D.O. , Ueda A. , Tung Y.S. , Mu R. 
Published: April 2011

AbstractIon implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO2) and crystalline (AI2O3) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amophous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.
Silver Cluster Formation in Implanted A12O3 Single Crystals
Authors: Freire F.L. , Broil N. , Mariotto G. 
Published: April 2011

AbstractSingle crystals of sapphire were implanted at room temperature with 300 keV-Ag+. The metal precipitate was characterized by a multitechnique approach including RBS, optical absorption and Raman spectroscopy. RBS measurements were used to determine the depth-profiles of the implanted ions. Ag depth profiles, derived from RBS are in good agreement with the results predicted by Monte Carlo simulations. Linear absorption spectroscopy has been used to characterize the effects of the ion fluence on the optical properties of the metal colloids in the UV-Vis region. The broad absorption band due to the surface plasmon resonance shows an appreciable red-shift when the fluence of bombarding ions increases. Raman scattering from acoustic vibrations of the silver clusters progressively shifts toward the laser frequency with increasing implantation dose. From low-frequency Raman spectra an evaluation of the average size of metal aggregates was derived.
Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon
Authors: Caturla M.-J. , Díaz de la Rubia T. , Jaraiz M. , Gilmer G.H. 
Published: April 2011

AbstractWe present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after l0ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 °C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.
Short-Time Hydrogen Passivation of Poly-Si CMOS Thin film Transistors by High Dose Rate Plasma Ion Implantation
Authors: Qin Shu , Bernstein James D. , Zhou Yuanzhong , Liu Wei , Chan Chung , King Tsu-Jae 
Published: April 2011

AbstractPlasma ion implantation (PII) hydrogenation has been developed for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFTs). A high dose rate PII process using a microwave multipolar bucket (MMB) plasma source and a 12.5 kHz pulse generator achieves saturation of device parameter improvement in 5 minutes, which is much shorter than other hydrogenation methods investigated thus far. These results have been achieved in one sixth the implant time of our previous PII experiments and are in good agreement with our process simulation.
Effect of Hydrogenation on the Electrical and Optical Properties of GaSb
Authors: Dutta P.S. , Bhat H.L. , Kumar Vikram 
Published: April 2011

AbstractThe effect of hydrogen plasma treatment on the optical and electrical properties of Gallium Antimonide bulk single crystals is presented. Plasma exposure gives rise to a layer of defects on the surface. These defects introduce multiple trap levels in the band gap from which a slow emission of carriers is observed during the capacitance - voltage measurements. On removal of the defect layer by controlled etching, the effects of hydrogen passivation are seen. The results of optical measurements indicate that passivation of shallow acceptors is more efficient than that of the donors and in general the passivation efficiency depends on the doping level. Passivation of deep levels and extended defects like grain boundaries and dislocations has also been observed. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level.
Low-Temperature (< 100°C) Growth of Ain by Ion Beam Assisted Deposition+
Authors: Karimy H. , Tobin E. , Bricault R. , Cremins-Costa A. , Colter P. , Perry D. , Namavar F. 
Published: April 2011

AbstractDuring the past few years, there has been growing interest in aluminum nitride (A1N) thin films because of their excellent optical, electrical, chemical, mechanical and high-temperature properties. Ion beam assisted deposition (IBAD) was used to deposit A1N films on flat and curved substrates, including Si, SIMOX, sapphire, quartz, aluminum, stainless steel, and carbon, at temperatures substantially below 100°C. The objective was to enhance the physical and mechanical properties of A1N film by controlling the crystal size and structures.Experimental results, as obtained by Rutherford backscattering spectroscopy (RBS) show the formation of stoichiometric A1N. Plan-view/cross-sectional transmission electron microscopy (TEM), clearly demonstrated the formation of a smooth, uniform A1N film. Electron diffraction and dark field TEM studies clearly show the growth of A1N crystallites with cubic and/or hexagonal structures and dimensions of 30 to 100A. The films are transparent and have good adhesion to all substrates. In addition to excellent high temperature (up to 1050°C measured) and chemical stability (shown through a variety of acid tests), these films have demonstrated extreme hardness, greater than two times that of bulk AIN.
Growth and Structure of Thin Films by High-Intensity Pulsed Ion-Beam Deposition
Authors: Ivanov YU.F. , Matvienko V.M. , Potyomkin A.V. , Remnev G.E. , Zakoutayev A.N. 
Published: April 2011

AbstractThe high-intensity pulsed ion-beam (HIPIB)/solid interaction results in the generation of an ablated plasma ( ∼1020 cm-3; ∼1 eV) which can be used to advantage for the deposition of thin films. Presented are the results of investigation on the deposition by HIPIB of thin films of high-melting metals, i.e. W, Ta, Mo, Nb, as well as of Al and Cu. The kinetics of the layer-by-layer film growth has been studied using transmission electron microscopy (TEM), transmission electron diffraction (TED) and reflection ellipsometry. The experiments were performed on a TEMP-2 supercurrent accelerator (ion energy 500 keV; ion current density at the target 200 A/cm ; power density (0.7 – 1.5) 108 W/cm2; pulse duration 60 ns; pulse repetition rate 8-10 min-1). The deposition of the films was carried out at room temperature at a high rate of 0.6 – 4.0 mm/s using (100)Si, (001)NaCl, glass and glass ceramic substrates.
The Ionization Degree of Ar Atoms Single Scattered from Pure Metal and Alloy Surfaces
Authors: Abdulkasimov F.B. , Ferleger V.Kh. 
Published: April 2011

AbstractA procedure of deflection of backscattered neutral atoms with low energy E° = (250÷3000) eV based on neutral ionization by electron impact has been developed. The ionization degrees η+of Ar atoms single scattered at the angle θ=138° from V and VI period metal polycrystal surfaces as well inelastic energy losses Q have been measured. It has been found that both η+ and Q changed nonmonotonically within each period. It has been shown that for the elements of the same group under otherwise equal conditions η+ at the scattering from V period elements appeared to be always higher than those for the VI period. It has been established that at scattering from MoRe alloy surface η+ in peaks of single scattering from Mo and Re the metal target values coincided with corresponding values measured for pure Mo and Re metal targets. Using the results obtained one could draw some conclusions about the dependence of the charge state on the target structure.
Ion Sources for Ion Beam Assisted Thin Film Deposmon
Authors: Svadkovsk Igor V. , Dostanko Anatoly P. 
Published: April 2011

AbstractTwo types of the ion sources for ion beam assisted deposition using inert gases, oxygen or nitrogen are reported. Their design and operational features are presented. Each of them has the properties of two existing main types of the gridless Hall sources: an end-Hall source and the anode-layer version a closed-drift ion source. Basic distinction of the developed sources is the extended range of ion energies in high-current beam for optimization of deposition, cleaning and etching processes.
The Gas Field Ion Source for Finely Focused Ion Beam Systems
Authors: Thompson W. , Armstrong A. , Etchin S. , Percival R. , Saxonis A. 
Published: April 2011

AbstractThe Gas Field Ion Source, GFIS, promises a 109A/(cm2 str) brightness, small beam sizes, and inert gas ion species. If this performance could be demonstrated on a commercial system, the GFIS might replace the liquid metal ion source as the standard source for FIB applications. Recent work at the Max-Planck-Institut für Kernphysik (MPI-K) in Heidelberg, Germany has shown that a GFIS with a ‘Super Tipped’ emitter can be reliably fabricated and can be run with stable helium beam current for more than 200 hours. However, this GFIS source must operate in a bakable UHV chamber, at cryogenic temperatures, and at high voltages with low vibration. A GFIS is now being integrated with high resolution ion optics and a vacuum chamber designed for studying GFIS image quality and ion induced chemistry.
On the Influence of Illumination During Ion Damage Defect Anneal of Silicon
Authors: Tanabe A. , Ashok S. 
Published: April 2011

AbstractAn exploratory deep level transient spectroscopy (DLTS) study on the possible role of illumination during thermal annealing has been carried out on Si with extended defects generated by Ar implantation and electron cyclotron resonance (ECR) hydrogen plasma. Experiments with rapid thermal anneal (RTA) using quartz-halogen lamps show only a minor role for illumination on anneal of defects generated by Ar ion damage as well as thermal generation of defects under post-hydrogenation anneal. However, significant differences are evident relative to conventional furnace anneal and it appears likely that recombination-assisted defect reactions may be quite significant in Si processing when high intensity sources such as arc lamps are adapted in RTA systems.
Anomalous Leakage Current Reduction by Ramping Rate Control in Mev Implantation
Authors: Hamada K. , Nishio N. , Saito S. 
Published: April 2011

AbstractThe crucial problem for buried layer formation using MeV implantation is the reduction of anomalous leakage current at the phosphorus dose of lxl014/cm2. We have demonstrated that the origin of anomalous leakage current is dislocations, on {111}Si planes, elongated along the <110 direction and that these defects can be reduced by using a high ramping rate above 50°C /sec. At the low ramping rate below 10°C/sec, high leakage current above 1 nA was observed , which was caused by the extension of dislocations to the surface. On the other hand, by increasing the ramping rate above 50°C/sec, dislocations were formed around the Rp, but they did not extended to the surface and as a result, low leakage current was obtained. These results suggest that some kinds of defects can be suppressed by ramping rate.
Investigation of Lateral and Vertical Profiles Enhanced by Implantation
Authors: Mineji A. , Hamada K. , Saito S. 
Published: April 2011

AbstractIn shallow junction formation with junction depth below 0.1μm, enhanced diffusion control is essential. The purpose of this paper is to investigate the B enhanced diffusion by point defects, introduced by high dose implantation with amorphization. Ge ions were implanted to induce amorphization within the S/D region of pMOS. These results were compared with that of the B enhanced diffusion by point defects, induced by Si+ implant with non-amorphization. These results suggest that the B enhanced diffusion in lateral profiles is much smaller, compared with that in vertical profiles, when point defects were introduced by amorphization.
Ion Beam Mixing in Insulator Substrates
Authors: McHargue Carl J. 
Published: April 2011

AbstractIon beam mixing involving insulator substrates is reviewed with an emphasis on thermochemical considerations. Studies generally have employed the bi-layer geometry for metal/insulator or oxide/oxide combinations. There is little evidence for long-range material transport in crystalline substrates.Recoil mixing has been detected for both metal and oxide films deposited on sapphire and irradiated at room temperature. Agglomeration of non-wetting metal films suggests that surface diffusion is induced by the ion beam. Evidence has been reported for the occurrence of chemical reactions and perhaps thermally-induced migration in amorphous aluminum oxide substrates.Ballistic mixing is also indicated for metal films on SiC, Si3N4 and SiO2. Ion beam-induced reactions have been observed at the interfaces for systems in which the enthalpy of reaction is favorable. Chemical effects in the cascade mixing regime may determine the phases present in the mixed zone after the composition changes caused by ballistic processes.
Energetic Ion Beams in Semiconductor Processing: Summary of a Doe Panel Study
Authors: Picraux S. T. , Chason E. , Poate J. M. , Borland J. O. , Current M. I. , Diaz De La Rubia T. , Eaglesham D. J. , Holland O. W. , Law M. E. , Magee C. W. , Mayer J. W. , Melngailis J. , Tasch A. F. 
Published: April 2011

AbstractThe trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of the emerging science issues and the technology challenges.
Epitaxy of PbTio3 on (100) SrTio3 and Vicinal (100) SrTio3 by Pulsed Laser Deposition
Authors: Theis C. D. , Schlom D. G. 
Published: April 2011

AbstractEpitaxial PbTiO3 films have been grown on (100) SrTiO3 substrates by pulsed laser deposition. X-ray diffraction analysis indicates pure c-axis oriented PbTiO3 films with a rocking curve FWHM of 0.25° for the 002 reflection. Thicker films (˜ 2000 Å) grown on 4° miscut SrTiO3 show mixed aaxis and c-axis PbTiO3 due to twinning along {1011} planes. The [100] axis of the a-axis domains are misoriented by 3.4° - 3.8° toward <001> substrate directions with respect to the substrate normal. In contrast to growth on well-oriented (100) SrTiO3 surfaces where the four equivalent tilts of the [100] axis of the a-axis domains are equally likely, on vicinal SrTiO3 the a-axis domains are preferentially oriented (˜ 90 vol. %) in an uphill direction with respect to the miscut substrate.
Temperature Dependent Micro-Raman Scattering of Sr0.35Ba0.65TiO3Film Grown by Pulsed Laser Deposition
Authors: Sen Sampriti , Ching-Prado E. , Reynés-Figueroa A. , Katiyar R. S. , Horwitz J. S. , Knauss L. A. 
Published: April 2011

AbstractA film of Sr0.35Ba0.65TiO3(SBT) has been grownin situby pulsed laser deposition on (001) LaAlO3single crystal. From X-ray diffraction studies the sample is found to be in single phase and well oriented. Raman spectrum of the SBT film shows bands around 178, 219, 296, 513, 571 and 741 cm”. The spectrum is similar to that found in SBT ceramic material, but the frequencies of the phonons are shifted. This can be explained if the film is under stress due to the presence of defects. The bands at 296 and 741cm−1correspond to the B1and A1(LO) normal modes of the BaTiO3(BT) system, and they are representative of the BT tetragonal phase, which at first glance appears to contradict earlier structural symmetry assignment for SBT(x=0.35) film at room temperature. Micro-Raman measurements from different regions of the film indicate that the SBT film is homogeneous. The bands at 296 and 741 cm−1are broader in comparison to those in BT single crystal and SBT ceramic material. Temperature dependent halfwidths of these modes suggest strong contribution of defects. Temperature dependent results are discussed in terms of anharmonic contributions involving three and four phonon processes as well as defects. Also, the orthorhombic and rhombohedral phase transitions are discussed. Finally, SEM/EDAX and FT-IR techniques have been used for the structural characterization.
The Structure and Electric Field Dependent Dielectric Properties of Annealed Sr1−xBaxTio3 Ferroelectric Thin Films
Authors: Knauss L.A. , Pond J.M. , Horwitz J.S. , Mueller C.H. , Treece R.E. , Chrisey D.B. 
Published: April 2011

AbstractThe effect of a post deposition anneal on the structure and dielectric properties of epitaxial Sr1−x, BaxTiO3 (SBT) thin films with x = 0.35, 0.50 and 0.60 has been measured. The films were grown by pulsed laser deposition on LaAlO3(001) substrates at 750°C in 350 mTorr of oxygen. The asdeposited films were single phase, (001) oriented with 0)-scan widths for the (002) reflection between 0.160 and 0.50'. The dielectric properties of the as-deposited films exhibit a broad temperature dependence and a peak which is as much as 50 K below the peak in bulk SBT. Also, the lattice parameter, as measured by x-ray diffraction, of the as-deposited films was larger than the bulk indicating strain in the films. The as-deposited films were annealed for 8 hours at 900°C in oxygen. The dielectric properties of the annealed films were closer to that of bulk SBT and the lattice parameter was closer to the bulk lattice parameter indicating a reduction of strain. Annealing of as-deposited films also resulted in an increased dielectric tuning without increased dielectric loss.
Epitaxy and Monolayer Patterning of Solution-Derived LiNbO3 Thin Layers
Authors: Clem P.G. , Xu Z. , Payne D. A. 
Published: April 2011

AbstractIntegrated lithium niobate (LiNbO3) thin layers show promise for efficient electrooptic, nonlinear optic, and optical amplifier applications. Solution-derived LiNbO3 thin layers have been deposited on sapphire substrates, allowing low temperature processing, control of stoichiometry, uniform doping and heteroepitaxy. Transmission electron microscopy of the LiNbO3/substrate interface suggests the structure consists of highly oriented grains with slight rotational variance to accommodate lattice mismatch. For use of such films as devices, the ability to pattern waveguides and other structures is desired. Modification of the substrate surface with patterns of hydrophobic monolayers allows control of deposition of solution precursors. Ambient, selective deposition of (00.1) oriented LiNbO3 heteroepitaxial strip waveguides with lateral dimensions as small as 4μm is demonstrated.
Dependence of Electro-Optic Effects on the Orientations of Epitaxial LiNbO3 Films
Authors: Lee See-Hyung , Noh T. W. , Lee Jai-Hyung 
Published: April 2011

AbstractEpitaxial LiNbO3 films were grown on a-cut sapphire, i.e., α-A12O3(0112), substrates by pulsed laser deposition. It is found the oxygen pressure is an important deposition parameter to influence the orientations of the LiNbO3 films. At an oxygen pressure of 10−1 torr, LiNbO3(0001) film was grown epitaxially. And, at a low oxygen pressure (i.e., 5x10−4 torr), LiNbO3(1120) film was grown epitaxially. Due to the anisotropic electro-optic (EO) constants, these films with the different orientations display large differences in their EO properties: the epitaxial LiNb3(0001) film shows little EO effects, but the LiNbO3(1120) film shows a large quadratic EO behavior with an effective coefficient of 2.38×10−5 m2/V2. The dependence of EO effects on the orientations of the epitaxial films was analyzed in terms of the linear and quadratic EO tensors of LiNbO3.
High Resolution X-Ray Diffraction Analysis of Piezoelectric LiNbO3 Films.
Authors: Shibata Yoshihiko , Kuze Naohiro , Matsui Masahiro , Kanal Masaki , Kawai Tomoji 
Published: April 2011

AbstractThin LINbO3 films are deposited on (001) sapphire and (001) LiTaO3 substrates by using pulsed excimer-laser ablation. These films are evaluated by high-resolution X-ray diffraction (HRXRD) analysis. Strained LiNbO3 films in which the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals are deposited on the sapphire substrates. On the other hand, extremely high-quality LiNbO3 films in which the a-axis of the films is the same as that of substrates are grown on the LiTaO substrates. X-ray rocking curves for the (006) reflection showed very narrow full width at half maximum (FWHM) of 208 arcsec for the films on the sapphire substrates, and 9 arcsec for the films on LiTaO3 substrates.