bluuebunny/crossref_metadata_2025_split huggingface dataset:
Associations of HLA‐DRB1 alleles with anti‐citrullinated protein antibody‐positive and anti‐citrullinated protein antibody‐negative rheumatoid arthritis in northern east part of Turkey
Authors: UÇAR Fahri , ÇAPKIN Erhan , KARKUCAK Murat , YÜCEL Burcu , SÖNMEZ Mehmet , ALVER Ahmet , KAKLIKKAYA Neşe , TOSUN Mehmet , ALEMDAROĞLU Emel , SOLAK Mustafa 
Published: March 2011

AbstractAim:  The aim of this study was to investigate the associations between human leukocyte antigen (HLA)‐DRB1 alleles with genetic susceptibility to rheumatoid arthritis (RA) and production of antibodies against cyclic citrullinated peptide (anti‐CCP antibody) and rheumatoid factor (RF) in Turkish RA patients.Methods:  We studied 291 RA patients and 253 controls. Genotyping was performed by polymerase chain reaction with sequence‐specific oligonucleotide probes hybridization method. Serum levels of anti‐CCP antibody, IgM‐RF and high sensitive C‐reactive protein titers were measured by commercial kits using immunological methods.Results:  We found that HLA‐DRB1*04 and *09 alleles were associated in anti‐CCP+ and anti‐CCP+ RA patients (P < 0.0001 and P < 0.001, respectively), while DRB1*01 and *04 were determined to be higher in RF+ RA patients (P < 0.001 and P < 0.0001, respectively). Moreover, DRB1*11 and DRB1*13 alleles were determined to be lower in RF and anti‐CCP/RF+ RA patients (P < 0.001 for both). HLA‐DRB1*04 was identified as a common responsible allele for susceptibility to the disease in anti‐CCP, RF and anti‐CCP/RF− RA patients (P = 0.0018, P = 0.0004 and P = 0.0023, respectively). HLA‐DRB1*13 allele alone was found to be protective against to anti‐CCP+ and RF− RA (P = 0.0003 and P = 0.006, respectively). On the contrary, there was no protective allele in anti‐CCP/RF− RA as well as anti‐CCP− RA patients.Conclusion:  This study indicates that associate and protective HLA‐DRB1 allele distributions are different in autoantibody (anti‐CCP or RF or anti‐CCP/RF)+ RA and autoantibody− RA patients, with exceptions of DRB1*04 and DRB1*13.
Metabolic Engineering of Clostridium cellulolyticum for Production of Isobutanol from Cellulose
Authors: Higashide Wendy , Li Yongchao , Yang Yunfeng , Liao James C. 
Published: March 2011

ABSTRACT

Producing biofuels directly from cellulose, known as consolidated bioprocessing, is believed to reduce costs substantially compared to a process in which cellulose degradation and fermentation to fuel are accomplished in separate steps. Here we present a metabolic engineering example for the development of a
Clostridium cellulolyticum
strain for isobutanol synthesis directly from cellulose. This strategy exploits the host's natural cellulolytic activity and the amino acid biosynthesis pathway and diverts its 2-keto acid intermediates toward alcohol synthesis. Specifically, we have demonstrated the first production of isobutanol to approximately 660 mg/liter from crystalline cellulose by using this microorganism.
High resolution MRI guided endovascular intervention of basilar artery disease
Authors: Jiang Wei-Jian , Yu Wengui , Ma Ning , Du Bin , Lou Xin , Rasmussen Peter A 
Published: March 2011

Background and aimHigh resolution MR imaging (HRMRI) has been used to study intracranial atherosclerotic plaques. How HRMRI guided our decision making process in endovascular intervention of basilar artery (BA) atherosclerotic disease is reported.Methods3 patients with symptomatic BA atherosclerotic disease underwent BA wall HRMRI under a 3 T MR scanner. Endovascular intervention was then performed utilizing HRMRI findings to guide therapy and to aid in planning the intervention.ResultsHRMRI clearly identified the eccentric atherosclerotic plaque at the opposite side of the adjacent right anterior inferior cerebellar artery in one patient and left posterior cerebral artery in one patient, and eccentric atherosclerotic plaque protruding BA lumen at the opposite side of the adjacent right anterior inferior cerebellar artery in the remaining patient. The BA stenosis was stented without compromise of the adjacent branch arteries in the three patients.ConclusionHRMRI may be used to delineate the eccentric atherosclerotic plaque and the ostia of the major side branches of BA. The HRMRI findings seem helpful in guiding BA stenting with reduced complication risk.
B7-H4 Expression in Human Melanoma: Its Association with Patients' Survival and Antitumor Immune Response
Authors: Quandt Dagmar , Fiedler Eckhard , Boettcher Diana , Marsch Wolfgang Ch , Seliger Barbara 
Published: March 2011

AbstractPurpose: Cancers have developed a number of strategies to escape immune responses including the differential expression of costimulatory molecules of the B7 family. B7-H3 and B7-H4 have recently been described in different tumor entities but the relevance for melanoma has not yet been studied so far.Experimental Design: Using immunohistochemistry, B7-H3 and B7-H4 expression was studied on 29 melanoma lesions. Survival curves and log-rank tests were used to test the association of protein expression with survival. Cell lines were evaluated for B7-H3 and B7-H4 expression by PCR and flow cytometry. Functional T-cell–tumor coculture assays were carried out with in vitro generated tumor transfectants.Results: B7-H3 and B7-H4 expression was detected in primary tumor lesions (29 of 29 and 28 of 29) and in metastases (28 of 29 and 26 of 29). The numbers of CD68+ macrophages were significantly lower in patients with low B7-H4 expression, whereas CD8+ T-cell infiltrates were independent of expression levels. Furthermore, a survival benefit for patients with B7-H4 low expressing melanoma was found, whereas B7-H3 was not associated with any clinical parameter. All 23 melanoma cell lines analyzed expressed B7-H3 and B7-H4 mRNA and protein, but B7-H4 was restricted to intracellular compartments. On silencing of B7-H3 by specific shRNA tumor-associated antigen–specific T cell responses were unaltered. Overexpression of B7-H4 on melanoma cells did not alter the cytotoxicity of different CD8+ effector cells, but drastically inhibited cytokine production.Conclusions: Our study provides for the first time evidence of B7-H4 expression on melanoma cells as a mechanism controlling tumor immunity which is associated with patients' survival. Clin Cancer Res; 17(10); 3100–11. ©2011 AACR.
Novel type II anti-CD20 monoclonal antibody (GA101) evokes homotypic adhesion and actin-dependent, lysosome-mediated cell death in B-cell malignancies
Authors: Alduaij Waleed , Ivanov Andrei , Honeychurch Jamie , Cheadle Eleanor J. , Potluri Sandeep , Lim Sean H. , Shimada Kazuyuki , Chan Claude H. T. , Tutt Alison , Beers Stephen A. , Glennie Martin J. , Cragg Mark S. , Illidge Tim M. 
Published: March 2011

AbstractThe anti-CD20 mAb rituximab has substantially improved the clinical outcome of patients with a wide range of B-cell malignancies. However, many patients relapse or fail to respond to rituximab, and thus there is intense investigation into the development of novel anti-CD20 mAbs with improved therapeutic efficacy. Although Fc-FcγR interactions appear to underlie much of the therapeutic success with rituximab, certain type II anti-CD20 mAbs efficiently induce programmed cell death (PCD), whereas rituximab-like type I anti-CD20 mAbs do not. Here, we show that the humanized, glycoengineered anti-CD20 mAb GA101 and derivatives harboring non-glycoengineered Fc regions are type II mAb that trigger nonapoptotic PCD in a range of B-lymphoma cell lines and primary B-cell malignancies. We demonstrate that GA101-induced cell death is dependent on actin reorganization, can be abrogated by inhibitors of actin polymerization, and is independent of BCL-2 overexpression and caspase activation. GA101-induced PCD is executed by lysosomes which disperse their contents into the cytoplasm and surrounding environment. Taken together, these findings reveal that GA101 is able to potently elicit actin-dependent, lysosomal cell death, which may potentially lead to improved clearance of B-cell malignancies in vivo.
Diet folate, DNA methylation and genetic polymorphisms of MTHFRC677T in association with the prognosis of esophageal squamous cell carcinoma
Authors: Lu Cheng , Xie Hui , Wang Fengliang , Shen Hongbing , Wang Jianming 
Published: March 2011

Abstract

Background
Folic acid may affect the development of human cancers. However, few studies have evaluated the consumption of diet folate in the prognosis of patients with esophageal squamous cell carcinoma (ESCC).

Methods
One hundred and twenty five ESCC patients underwent esophagectomy between January 2005 and March 2006 in the Yangzhong People's Hospital were recruited and followed up. The effects of diet folate, aberrant DNA methylation of selected genes and methylenetetrahydrofolate reductase (MTHFR) C677T genetic polymorphisms on the prognosis of ESCC were evaluated by using Cox proportional hazard regression models.

Results
Our analysis showed an inverse association between diet folate intake and the risk of death after esophagectomy. The median survival time was 3.06 years for low or moderate folate consumption and over 4.59 years for high folate consumption. After adjusting for potential confounders, the hazard ratios (95% confidence interval) [HRs (95% CI)] were 0.72 (0.36-1.46) for moderate and 0.39 (0.20-0.78) for high folate intake, respectively (P for trend = 0.007). This preventive effect was more evident in patients carrying MTHFR 677CC genotype. No significant relation was observed between aberrant DNA methylation of P16, MGMT and hMLH1 gene, as well as MTHFR C677T genetic polymorphisms and the prognosis of ESCC.

Conclusions
Our research indicated that diet folate intake may have benefits on the prognosis of ESCC after esophagectomy. From a practical viewpoint, the findings of our study help to establish practical intervention and surveillance strategies for managements of ESCC patients and can finally decrease the disease burden.
The Direct Observation of Atomic Surface Structure and Inclined Planar Defects in Au(111) Films
Authors: Krakow William 
Published: March 2011

With a high resolution electron microscope it is possible to image directly the atomic surface lattice of vapor-deposited Au(111) films. The contrast of the surface atoms can be either black or white relative to the background which is characteristic of close-packed planes of atoms in the stacking sequence ABCABC.... An analysis of these images was performed using multislice dynamical diffraction computations of 256 × 256 = 65 536 reciprocal space points and subsequent image simulations. The effects of top and bottom surface roughness, different termination layers and the contrast compared with single-atom imaging are considered.The identification of atomic structure detail at incoherent double-position boundaries in these (111) films was also achieved. Surface layer terminations, variations in the choice of every third matching plane and the possibility that twinning planes produce boundaries with jogs were investigated. Multislice computer programs were designed to calculate the diffraction effects from these inclined boundaries using two-dimensional fast Fourier transform and shift techniques of the projected potential. This is the first time that inclined planar defects have been analyzed in this manner.
Effects Of Grain Boundaries on the Resistivity of Cosputtered Wsi2 Films
Authors: Campbell D. R. , Mader S. , Chu W. K. 
Published: March 2011

ABSTRACTResistivity and grain size measurements on thin films of co-sputtered WSi2 show that the resistivity in this material is dominated by grain boundary scattering. The reflection coefficient for the transport of charge carriers through the grain boundaries was determined to be approximately 0.9.
Silicide Applications In Microelectronics
Authors: Crowder Billy L. 
Published: March 2011

ABSTRACTThe advent of very-large-scale integration in microelectronics has been achieved by reduction in lithographic dimensions coupled with a corresponding decrease in vertical dimensions in properly scaled device structures. This development has placed severe demands upon interconnection technology. The practice of using semiconducting regions (diffusions or polycrystalline silicon) for interconnecting devices is no longer viable because of the high resistance associated with such regions (i.e. interconnections do not “scale” properly). One solution to this problem is the use of multilevel metallization, but this requires tens of thousands of small contacts to shallow diffusions. Refractory metals such as titanium are being explored as materials which provide the necessary stable low resistance contacts suitable for integrated circuit applications. Another solution to the problem is to develop a higher conductivity material to replace or supplement polycrystalline silicon. Refractory metal disilicides have been extensively investigated for this application -both as a direct replacement for polycrystalline silicon or in a silicide/polycrystalline silicon composite (polycide). A critical review of the present status in both these areas will be presented. Emphasis will be upon our experience gained in conjunction with the development of a 1 μm silicon gate metal/oxide/ semiconductor field effect transistor technology.
The Charge State of Iron Ions Implanted Into Sapphire
Authors: Mchargue C. J. , Sklad P. S. , White C. W. , Farlow G. C. , Perez A. , Kornilios N. , Marest G. 
Published: March 2011

ABSTRACTSingle crystals of α-Al2O3 were implanted with 57Fe+ at room temperature to fluences ranging from 1016 to 1017 ions/cm2. The damage in the implanted zone and the valence states and local environment of implanted ions were studied by transmission electron microscopy, Rutherford backscattering-channelling, and conversion electron Mössbauer spectroscopy. The implanted iron was distributed among the three charge states Fe2+, Fe3+, and Fe°(metallic clusters) with the relative amount of each varying with concentration of implanted iron.
High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
Authors: Jaussaud C. , Margail J. , Stoemenos J. , Bruel M. 
Published: March 2011

ABSTRACTHigh temperature annealing of Simox wafers (T > 1300°C), has been proved to dramaticaly increase the quality of the SOI structure.The heat treatment leads to a redistribution of the implanted oxygen, opposite to its concentration profile, towards the buried layer.This paper describes from a thermodynamical point of view the SiO2 precipitates dissolution. The physical mechanisms of the oxygen migration are also discussed.
Carbon and Oxygen Incorporations into Surface Layers During Titanium Implantation
Authors: Fukui Y. , Hirose Y. , Iwaki M. 
Published: March 2011

ABSTRACTA study has been made of incorporations of carbon and oxygen into surfaces of fourteen kinds of specimens during titanium implantation by means of AES sputter depth profiling. The specimens used were Fe, Al, Cu, Si, Cr, Ta, Co, Ni', Mo, Ti, Au, Pt, Pd and Fe-4.5at%C, which were implanted with titanium to a fluence of 2×1017 ions/cm2 in a vacuum of ∼2×10−4 Pa at room temperature. The fourteen kinds of specimens implanted with titanium were classified into three groups according to the amounts of incorporated carbon and oxygen from a vacuum to the surfaces. The first group corresponds to Fe, Ni, Co, Al and Fe-4.5at%C, in which surfaces a large amount of carbon is incorporated. The second group corresponds to Al, Ti and Ta, in which surfaces a large amount of oxygen is incorporated. The third group corresponds to Cu, Si, Cr, Mo, Au, Pt and Pd, in which surfaces carbon and oxygen are little incorporated. In the cases of Cu, Au, Pt and Pd, little incorporations of carbon and oxygen are caused by the high sputtering yield and the less adsorptive power of the specimens.
Composition and Structure of Si3n4 Implanted with Ti AT 900°C
Authors: Singer I. L. , Vardiman R. G. , Gossett C. R. 
Published: March 2011

ABSTRACTTi+ ions were implanted to high fluences (up to 5 × 1017 /cm2 ) into Si3N4 substrates heated to around 900°C. Composition vs depth profiles were obtained by RBS (in conjunction with RUMP analysis) and microstructures were examined by TEM. At a fluence of 4 × 1017 /cm2, the Si concentration was considerably reduced at the Ti peak depth but enriched near the surface. By 5 × 1017 /cm2, Si was nearly depleted from the implanted layer, leaving a Ti-rich nitride layer merging continuously into Si3N4. TEN detected TiN precipitates up to several pm in diameter, and coherent with Si3N4 crystallites. A Si-Ti-N ternary phase diagram is used to interpret the observed solid state reactions.
High Energy Ion Beam Annealing in Implanted CdTe
Authors: Withrow S. P. , Lusnikov A. , Jiménez-Gonz´lez- H. J. , Dresselhaus G. 
Published: March 2011

ABSTRACTThe annealing effects of a high energy beam of Cu ions on implanted CdTe crystals are studied. Single crystals of CdTe have been implanted with Eu (energy 60 keV, fluence 1 × 1016 cm−2) at substrate temperatures of 25°C, and 400°C. Lattice damage introduced by the implantation process was measured by Rutherford backscattering. The samples were then implanted with high energy Cu ions (energy 3.5 MeV, fluence 0.5 × 1016 cm−2) at substrate temperatures of 25°C and 200°C. Channeling spectra from these samples indicate a reduction in the near-surface lattice damage as a result of the Cu implantation that can be unambiguously separated from the external heating of the substrate.
Electrical and Structural Study on Ion Implanted Poly(Dimethylsilylene-Co-Methylphenylsilylene)
Authors: Basheer R. A. , Hamdi A. H. , Kwor R. Y. 
Published: March 2011

ABSTRACTThe effects of ion implantation on the electrical and structural properties of poly(dimethylsilylene-co-methylphenylsilylene), DMIOPS, thin films have been investigated. Ionic species of krypton, arsenic, fluorine, chlorine, and sulfur were implfgted at energies ranging from 35 to 200 key and with doses of up to 1 × 1016 ion/cm2. The conductivity of the polymer increased upon implantation reaching a maximum value of 9.6 × 10−6 (Ω cm)−1 for the case of arsenic ion at a dose of 1 × 1016 ion/cm2 and energy of 100 keV. The results showed that ion implantation induced conduction in DUMPS was primarily due to structural modifications of the material brought about by the energetic ions. Infrared analysis and Auger electron spectroscopy showed evidence for the formation of a silicon carbide-like structure upon implantation.
Nucleation in Amorphous Si:H Alloy
Authors: Koo Y. C. , Perrin A. R. , Aust K. T. , Zukotynski S. 
Published: March 2011

ABSTRACTA method of producing microcrystalline material from thin films of hydrogenated amorphous silicon was investigated. Exposure to gamma and neutron radiation, and silicon self ion implantation were used to induce nucleation in the amorphous material. According to the preliminary results, neutron irradiation represents a most promising method for promoting crystallization.
A Cross-Sectional TEM Study of the Effects of Annealing Conditions on the Regrowth of Lead-Implanted Single Crystal Calcium Titanate
Authors: Rankin J. , Boatner L. A. , White C. W. , Hobbs L. W. 
Published: March 2011

ABSTRACTThe atmospheric effects of oxygen and water vapor on the epitaxial regrowth behavior of ion-implanted CaTiO3 have been studied. Cross-sectional transmission electry microsgopy (TEM) samples prepared from crystals implanted with 1(1015) Pb/cm2 at 540 KeV, were annealed at 450–650°C for 40 – 80 minutes, in environments containing different percentages of oxygen and water vapor. Regrowth was studied for implantation directions along both the <010> and <100> crystallographic directions of this orthorhombic Perovskite structure, space group Pcmn. TEM on unannealed crystals indicated the presence of an amorphous region extending approximately 190 nm in from the edge of the sample as a result of ion-implantation. Annealing produced an epitaxial regrowth of the amorphous region. The regrowth process began at the original amorphous/crystalline interface and proceeded outward to the surface of the sample. It was found that the epitaxial regrowth rate increased as the amount of water vapor in the annealing atmosphere was increased. In addition, it was observed that the amount of oxygen present during annealing did not alter the rate of recrystallization in this system.
Transient Processes at the SI-Water Interface During Pulsed Laser Irradiation
Authors: Polman A. , Sinke W. , Utitormark M. J. , Thompson Michael O. 
Published: March 2011

ABSTRACTHeat transfer processes and phase transitions at the Si-water interface during nanosecond pulsed laser irradiation were studied in real time using transient optical reflectance measurements. Measurements at two probe laser polarizations suggest that during irradiation a steam phase is formed near the Si surface. Relaxation of this phase occurs several hundred nanoseconds after solidification of the Si is completed. Acousto-optical measurements indicate that a shock wave, propagating with the sound velocity in water, is initiated near the Si-water interface.
Time Resolved Reflectivity Measurements on Pulsed Laser Irradiated Silicon Immersed in Water
Authors: Wu X. D. , Dijkkamp D. , Venkatesan T. 
Published: March 2011

ABSTRACTTime resolved reflectivity (TRR) measurements were carried out during pulsed laser irradiation of silicon immersed in water. It was found that the TRR in water was similar to that in air though the signal deteriorated after about 100 ns from the starting point of the laser for incident energy densities above 1.4 J/cm2 (unlike what is observed in air). The total melt duration in water was about 2.8 to 1.6 times less than that in air at the same absorbed energy density. It was estimated that 20 % of the absorbed energy was taken away by the water layer. For the same energy coupled into the solid the melt-in/regrowth kinetics was speeded up by the presence of the water layer at the surface by about a factor 2 consistant with the results of Polman et. a15.
Rapid Crystallization of Amorophous Gallium Produced by Laser Quenching
Authors: Fröhlingsdorf J. , Stritzker B. 
Published: March 2011

ABSTRACTTransient conductance measurements reveal the metastability of amorphous Gallium (a-Ga): Gallium can be amorphized for a certain “lifetime” at temperatures as high as 60 K, i.e. well above the crystallization temperature of 16 K.For the first time the lower part of the C-shaped transition curve in a TTT-diagram can be measured for a pure metal. The results are in good agreement with undercooling behavior of liquid Ga-droplets.
Bilayer Structures Obtained by Pulsed Laser Quenching of Binary Systems
Authors: Baeri P. , Foti G. , Grimaldi M. G. , Priolo F. , Reitano R. , Cullis A. G. , Chew N. G. 
Published: March 2011

ABSTRACTNiSi and Ni2Si layers on silicon substrates as well as high fluence Si(As) ion implanted layers,have been rapidly melted by 30 ns Nd laser pulse irradiation.The energy density ranged between 0.4 and 1.2 J/cm2. Bilayer structures have been observed when the energy density has been chosen properly.Buried epitaxial layers together with an amorphous or a policrystalline layer on top,have been detected by RBS and TEM measurements.
Laser-Induced Phase Transformation of Sb-Te Alloy Films for Optical Storage
Authors: Fujimori Susumu , Yagi Shogo , Yamazaki Hiroki , Funakoshi Nobuhiro 
Published: March 2011

ABSTRACTSb-Te alloy films are developed as rewritable optical recording materials based on amorphous-crystalline phase transformations. Sb2 Te3 is shown to be the best practical phase change medium.
The Kinetics of Damage Removal Metastable Carrier Concentration Relaxation and Secondary Defect Evolution During RTA
Authors: Ii Xu , Peihsin Tsien , Zhljan Li 
Published: March 2011

ABSTRACTThe kinetics of damage removal, metastable carrier concentration relaxation and secondary defect evolution in As+-implanted and rapidly annealed silicon was studied m detail. It was found that these processes are characterized by different activation energies. There is a critical temperature Tc for RTA. Only when the annealing temperature is higher than Tc, with suitable time duration can the RTA advantages be fully exloited.