bluuebunny/crossref_metadata_2025_split huggingface dataset:
Evaluation of Applied Materials' Rapid Thermal Processor using Sematech Methodologies for 0.25 m Technology Thermal Applications-Part II
Authors: Nanda Arun K. , Riley Terrence J. , Miner Gary , Pas Michael F. , Hossain-Pas Sylvia 
Published: April 2011

AbstractUnder a joint development contract with Applied Materials (AMAT) and Texas Instruments (TI), SEMATECH undertook a project (Joint Development Project J100) with a goal of delivering a cost effective, technically advanced Rapid Thermal Processor (RTP). The RTP tool was specified to meet the present and future manufacturing needs of SEMATECH's member companies. The J100 results contained here will focus on the temperature and control performance of the AMAT RTP tool. The J100 results on the temperature measurement and control performance of AMAT's RTP tool using bare backside monitor wafers were presented in part I. In actual manufacturing environments the backside conditions of wafers are not consistent which causes temperature variations during rapid thermal processing. In this experiment, boron monitor wafers with varying backside conditions were used to test the uniformity, repeatability, and stability of the tool. The wafer backside films were fabricated using predictions from emissivity models and were subsequently verified by experimental techniques. In addition, perturbation experiments utilizing boron and arsenic implanted wafers demonstrated a high degree of localized temperature control across the wafers. A 3-sigma temperature variation ranging from 3.0 °C (for wafers with similar backside films) to 6.0 °C (for wafers with varying backside films) was found for all wafers processed during this evaluation. The perturbation experiments, which included a forced temperature offset of two degrees at one of the wafer temperature sensors, resulted in a noticeable change in sheet resistance across the wafer.
Development of a Cluster Tool and Analysis of Deposition of Silicon Oxide by TEOSO2 PECVD
Authors: Morimoto N. I. , Swart J. W. 
Published: April 2011

AbstractA single wafer cluster tool was developed. It is composed of a central robot arm wafer handler and three processing chambers: a RF PECVD chamber, a microwave after glow RPECVD chamber and a rapid thermal annealing chamber. The tool is designed to allow high flexibility, with in-situ multi-sequential processing capability. An in depth study of the deposition of silicon oxide by PECVD was performed. As unique features, it handles TEOS vapor without a carrier gas and it includes a double stage gas distribution system. The films were characterized by means of: ellipsometry, FTIRS, RBS, AES, SIMS, stress and etch rate in diluted (1:100) HF solution. Good uniformity (>98 %) was obtained. The results show that the quality of the films is most influenced by the wafer temperature and flux of oxygen. For the best condition, the following results were obtained: deposition rate of 370 nm/min., refraction index of 1.46, stoichiometry of 2.0, intrinsic stress of 1.3×109 dyn/cm2, carbon content below the AES and SIMS detection limit and low OH content. We also propose a model that fits our results.
Low Temperature Oxidation Processing with High Purity Ozone
Authors: Kurokawa A. , Ichimura S. , Kang H. J. , Moon D. W. 
Published: April 2011

AbstractTo lower the temperature of oxide-passivation processing the high- purity ozone (more than 98 mole %) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.
Wafer Temperature Measurement: Status Utilizing Optical Fibers
Authors: Schietinger Chuck , Jensen Earl 
Published: April 2011

AbstractThis paper reviews the current status and problems of optical fiber temperature measurements for RTP and single wafer processing. Included is a discussion of a range of fiber based options available and currently being utilized today. The advantages and disadvantages of the options are presented. In addition new data from the use of the Ripple Technique pyrometer is presented. Included are data from AT&T (Lucent Technologies) ripple pyrometer development. Lucent Technologies is evaluating and improving the ripple pyrometer on a number of different style production RTP furnaces. Recent advances in signal processing for very low level photo diode currents in the range of 10 e-14 amps, will also be presented.
Commercial RTP-A SEMATECH Perspective
Authors: Speranza Tony , Riley Terry , Nanda Arun , Fowler Burt , Torres Kenneth , Geyling Franz , Lindholm Don 
Published: April 2011

AbstractThis paper discusses various commercial aspects of Rapid Thermal Processing (RTP). It provides an overview of SEMATECH's efforts to improve the manufacturing viability of RTP. Over the past several years SEMATECH, a U.S. Government/Industry consortium, has identified thermal equipment and processing needs relating to semiconductor manufacturing. It has aggressively pursued solutions to these needs through specific equipment projects. These projects include: RTP Installed Base Productivity Improvement, 0.25um RTP Tool Development, and RTP Modeling and Component Technology. Also discussed are several thermal projects which focus on the performance of more traditional tools. A comparison between RTP and a vertical furnace with model based process control and a small batch fast ramp furnace is made. A brief discussion of an RTP gate stack cluster tool project is followed by a review of future thermal processing needs, including 300mm.
Response Surface Technique forEx SituProcess Uniformity Optimization in a Multi-Zone RTP System
Authors: Knutson Karson L. , Cooper Thomas L. 
Published: April 2011

AbstractMany RTP reactors used in production presently employ single point temperature measurement along with multiple lamp zone control. Optimum zone settings in these systems are known to vary depending on the radiative properties of the wafer and the process. Therefore, tuning the system to meet specifications for a new process is achieved by an operator analyzing metrology results and drawing on experience with the system to determine proper zone settings. It would be desirable to have a technique which can be used to optimize the lamp zone settings in an automatic manner that would be the same for every user. Furthermore, such a technique should be both simple to use and robust. In this work a method is presented which relies on an empirical response surface and an interative computational technique to minimize process variance. The results show that the method works regardless of the process variable being optimized, i.e. temperature, oxide thickness, etc., and that the method relies on no user input.
Sub-Half Micron Elevated SourceDrain NMOSFETS by Low Temperature Selective Epitaxial Deposition
Authors: Sun J. , Bartholomew R. F. , Bellur K. , O'Neil P. A. , Srivastava A. , Violette K. E. , Oztiirk M. C. , Osburn C. M. , Masnari N. A. 
Published: April 2011

AbstractIn this paper we report the first NMOSFETs with elevated S/D selectively deposited by ultra high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD). The deposition process included an in-situ vacuum prebake (750 °C for 10 sec) followed by selective epitaxial growth (SEG) at 800 °C. Si2H6 was used as the silicon gas source instead of the more commonly used SiH4 and SiH2Cl2 in order to achieve high growth rates at low pressure. To prevent nucleation from occurring on insulator surfaces during growth, an etching mechanism was introduced by the addition of Cl2. The gases included 100 sccm of 10% Si2H6 in H2 and 2 sccm of Cl2 at a process pressure of 24 mTorr. An epitaxial growth rate of 160 nm/min has been achieved. The final epi thickness was around 0.1 μm. The S/D junctions were formed via ion implantation into the epi. The subsequent RTA (10 sec at 950 °C) resulted in an effective junction depth about 75 nm beneath the starting Si substrate. Process and device simulations reveal the importance of maintaining a shallow LDD junction for deep submicron devices by using low temperature selective deposition. MOSFETs exhibit good subthreshold characteristics with subthreshold swing of 86 mV/dec at a drain bias of 2.5 V, and threshold variations due to charge sharing and drain-induced-barrierlowering (DIBL) were moderate for Leff down to 0.35 μm. The gate-induced junction leakage current is below 2 pA/μm at a bias of 2.5 V.
Silicon Thin Film Homoepitaxy by Rapid Thermal Atmospheric-Pressure Chemical Vapor Deposition (RT-APCVD)
Authors: Monna Rémi , Angermeier Detlef , Slaoui Abdelilah , Muller Jean Claude 
Published: April 2011

AbstractThe homoepitaxy of thin film silicon layers in a horizontal, atmospheric pressure RTCVD reactor is reported. The experiments were conducted in a temperature range from 900°C to 1300°C employing the precursor trichlorosilane (TCS) and the dopant trichloroborine (TCB) diluted in hydrogen. The epilayers were evaluated by Nomarski microscopy, Rutherford backscattering spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the thin film were analyzed by sheet resistance and four point probe characterization methods. We propose that the responsible mechanisms for the observed growth decline at higher precursor concentration in hydrogen are due to the reaction of the gaseous HCI with the silicon surface and the supersaturation of silicon.
The Effect of Multilayer Patterns on Thermal Stress During Rapid Thermal Processing
Authors: Hebbi Jeffrey P. , Jensen Klavs F. 
Published: April 2011

AbstractMultilayer patterns can lead to temperature non-uniformity and undesirable levels of thermal stress in silicon wafers during rapid thermal processing (RTP). Thermal stress can, in turn, cause problems such as photolithography overlay errors and degraded device performance through plastic deformation. In this work, the temperature and stress fields in patterned wafers are simulated using detailed finite-element based reactor transport models coupled with electromagnetic theory for predicting radiative properties of multilayers. The temperature distributions are then used to predict the stress fields in the wafer and the onset of plastic deformation. Results are presented for two generic two-dimensional axi-symmetric reactors employing single and double side illumination. The effect of patterns and processing parameters are explored, and strategies for avoiding pattern induced plastic deformation are evaluated.
Microwave Processing of Redox Ceramic-Metal Composites
Authors: Fiore R. R. Di , Clark D. E. 
Published: April 2011

AbstractCeramic-metal composites have been produced through the reduction of copper oxide (CuO) and the oxidation of aluminum in a reducing atmosphere. Fine powders of CuO and Al (<38μm) were mixed with yttria stabilized zirconia, ball milled and uniaxially pressed into disc samples. Microwave hybrid heating was used to process samples using β-SiC and activated carbon powder as susceptors. Pyrolysis of the carbon provided the reducing atmosphere. The resulting Ctt/Al2O3/Y-ZrO2 composite was analyzed for density, compressive strength and resistivity.
Microwave Induced Plasma (MIP) Brazing of Silicon Nitride to Stainless Steel
Authors: Samandi M. , Bate M. , Donnan R. , Miyake S. 
Published: April 2011

AbstractIn an attempt to accelerate the process of joining of metals to ceramics, a new rapid brazing technology has been developed. In this process, referred to as Microwave Induced Plasma (MIP) brazing, a microwave plasma is used to rapidly heat the ceramic and metal to the melting temperature of the reactive braze material. The heating rate obtained by MIP could be many times faster than those achieved by conventional resistive heating in a tube furnace. The fast heating rate has no detrimental effect on the joint quality and in fact results in the formation of a thick interfacial film suggesting significant interdiffusion between the braze and ceramic, possibly stimulated by the microwave radiation. In this paper the experimental arrangement of the MIP system is described. The unique capability of the MIP heating is demonstrated by successful joining of hot pressed silicon nitride to stainless steel using reactive metal brazing. The results of microstructural characterisation of the joints carried out by SEM and EDS will also be presented.
Industrial Applications of Variable Frequency Microwave Energy in Materials Processing
Authors: Fathi Z. , Tucker D. A. , Lewis W. A. , Wei J. B. 
Published: April 2011

AbstractA review of some market-driven research, process applications and systems development is provided. The variable frequency microwave processing concepts are briefly described. Industrial processing using variable frequency microwave energy in the areas of polymerization, composite processing, bonding and plasma is discussed. Analytical applications inherent in the use of variable frequency and its control are demonstrated in the areas of materials signature analysis for volumetric cure monitoring.
A Hybrid Numerical Method For Modeling Microwave Sintering Experiments
Authors: Hile C. V. , Kriegsmann G. A. 
Published: April 2011

AbstractWe describe a hybrid numerical method for modeling the electromagnetic interaction of a low-loss material in a single-mode waveguide applicator. The method we propose utilizes a combination of asymptotic and numerical techniques. The interaction between the applicator and the electromagnetic fields is described using scattering matrix theory and the interaction between the electromagnetic fields and the ceramic is determined numerically. Several simulations are presented to show the accuracy and simplicity of this method along with the relatively small amount of computer resources it requires.
Enhanced Computer Modelling for High Temperature Microwave Processing of Ceramic Materials
Authors: Craven M. P. , Cross T. E. , Binner J. G. P. 
Published: April 2011

AbstractA new software package is described for 2-Dimensional modelling of microwave heating. It is particularly suited to the high temperature heating of ceramics, where electrical and thermal properties are strongly dependent on temperature. The described program, x_tlm, runs under Xwindows, which allows a microwave cavity and its contents to be entered graphically and stored as a schematic diagram. The diagram is automatically converted into a mesh format for simulation using a topology independent Transmission Line Modelling formulation. Temperature dependencies of material properties are specified as polynomial functions of temperature. Surface heat loss by the radiation mechanism, which dominates at higher temperatures, is also introduced into the model.
Microwave-Assisted Ignition
Authors: Bechtold J. K. , Booty M. R. , Kriegsmann G. A. 
Published: April 2011

AbstractThe microwave heating and ignition of a combustible material is modeled and analyzed in the small Biot number and large activation energy regimes. Both the temporal and spatial evolution of the temperature within the material are described. The ignition characteristics are determined by a localized equation for the perturbation to the inert temperature, which is shown to exhibit thermal runaway behavior. Analysis of this local equation provides explicit ignition conditions in terms of the physical parameters in the problem.
Possibility of Microwave-Controlled Surface Modification
Authors: Rybakov K. I. , Semenov V. E. 
Published: April 2011

AbstractResults of the theoretical study of surface effects in ionic crystalline solids under the action of high-frequency electric fields of moderate intensity are presented. The averaged ponderomotive action of the electric field on the charged vacancies within the crystal causes directional mass transport that leads to development of a surface instability. The analysis shows that the proposed effect can result in the formation of a periodic profile on the surface.
A Comparison Study on the Densification Behavior and Mechanical Properties of Gelcast Versus Conventionally Formed B4C Sintered Conventionally and by Microwaves
Authors: Menchhofer P. A. , Morrow M. S. , Kiggans J. O. , Schechter D. E. 
Published: April 2011

AbstractThis investigation compares microstructures and mechanical properties of both Gelcast B4C and “conventionally” die-pressed B4C, using both microwave and conventional sintering methods. The microstructures and final mechanical properties of B4C specimens are discussed.
Effect of Microwave Treatment on the Bulk and Nearcontact Properties of Semiconductors of Technical Importance
Authors: Belyaev A. A. , Belyaev A. E. , Ermolovich I. B. , Komirenko S. M. , Konakova R. V. , Lyapin V. G. , Milenin V. V. , Tkhorik Yu. A. , Shevelev M. V. 
Published: April 2011

AbstractWe investigated the effect of microwave radiation on the physico-chemical properties of some semiconductor materials (CdxHgl-xTe, GaAs) and metal (Al, Pt, Cr, Mo, W) - GaAs Schottky barrier diode structures. From comparison with the results of the other treatments (heat annealing, g-irradiation) some suggestions are made concerning possible mechanisms of the interaction between microwave radiation and the objects studied.
The Magnetic Field Sensor on the Base of Ybacuo Ceramics with Sharp Jump of Magnetic Reply
Authors: Rostami Kh. R. , Sukhanov A. A. , Mantorov V. V. 
Published: April 2011

AbstractThe magnetic field sensor with sensitivity 10−3 Oe and work temperature 77°K is created on the base of YBaCuO ceramics having a sharp jump of the diamagnetic moment in the region of the first Josephson critical magnetic field. The magnetic field measurement methods and the sensor principle are described. Ways to improve the obtained results are indicated.
Finite-Difference Time-Domain Simulation of Microwave Sintering in A Variable-Frequency Multimode Cavity
Authors: White Mikel J , Dillon Steven F. , Iskander Magdy F. , Kimrey Hal D. 
Published: April 2011

AbstractThere have been recent indications that variable-frequency microwave sintering of ceramics provides several advantages over single-frequency sintering, including more uniform heating, particularly for larger samples. The Finite-Difference Time-Domain (FDTD) code at the University of Utah was modified and used to simulate microwave sintering using variable frequencies and was coupled with a heat-transfer code to provide a dynamic simulation of this new microwave sintering process. This paper summarizes results from the FDTD simulations of sintering in a variable-frequency cavity. FDTD simulations were run in 100-MHz steps to account for the frequency variation in the electromagnetic fields in the multimode cavity. It is shown that a variable-frequency system does improve the heating uniformity when the proper frequency range is chosen. Specifically, for a single ceramic sample (4 × 4 × 6 cm3), and for a variable-frequency range from f = 2.5 GHz to f = 3.2 GHz, the temperature distribution pattern was much more uniform than the heating pattern achieved when using a single-frequency sintering system at f = 2.45 GHz.
Some Aspects Related to The Transfer of Microwave Sensing Technology
Authors: Bolomey J. Ch. 
Published: April 2011

AbstractThis paper reviews the major concerns related to the development of microwave sensing techniques. For their practical importance, testing and measurement of conveyed products via microwave multipoint sensors are more particularly considered. After reporting some promising sensing configurations and applications, technical and non technical aspects involved in the development of microwave sensors are analysed. Some of these aspects are encountered in any technology transfer process, while some others are more particularly specific to microwave sensors. In the conclusion, some general guidelines are provided for a successfull development of microwave sensing technology.
Advanced Ceramics Sintering Using High-Power Millimeter-Wave Radiation
Authors: Setsuhara Y. , Kamai M. , Kinoshita S. , Abe N. , Miyake S. , Saji T. 
Published: April 2011

AbstractThe results of ceramics sintering experiments using high-power millimeter-wave radiation are reported. Sintering of silicon nitride with 5%Al2O3 and 5%Y2O3 was performed in a multi-mode applicator using a 10-kW 28-GHz gyrotron in CW operation. It was found that the silicon nitride samples sintered with 28 GHz radiation at 1650'C for 30 min reached to as high as theoretical density (TD), while the conventionally sintered samples at 1700°C for 60 min resulted in the density as low as 90% TD. Focusing experiments of millimeter-wave radiation from the high-power pulsed 60-GHz gyrotron have been performed using a quasi-optical antenna system (two-dimensional ellipso-parabolic focusing antenna system) to demonstrate the feasibility of the power density of as high as 100 kW/cm2. Typical heating characteristics using the focused beam were made clear for this system. It was found that the densification of yttria-stabilized zirconia (ZrO2-8mol%Y2O3) samples to as high as 97% TD was obtained from the sintering with focused 60 GHz beam in pulse operation with a 10-ms pulse duration at a 0.5Hz repetition. The densification temperature for the zirconia could be lowered by 200°C than that expected conventionally.
Microwave Plasma Assisted CVD of Diamond on Titanium and Ti-6Al-4V
Authors: Tucker D. A. , McClure M. T. , Fathi Z. , Sitar Z. , Walden B. , Sutton W. H. , Lewis W. A. , Wei J. B. 
Published: April 2011

AbstractThe ultimate goal of this research was to demonstrate a Microwave Plasma assisted Chemical Vapor Deposition (MPCVD) process to coat a Ti-6A1-4V bearing shaft. Preliminary experiments were performed in an ASTeX™ system on flat chemically pure titanium and Ti-6AI-4V coupons. Diamond deposition was also attempted on a Ti-6AI-4V wedge sample which contained a curved surface that simulated the bearing. Although uniform diamond deposition was attained on the flat samples, very poor uniformity was observed on the curved sample. This lack of uniformity was attributed to the difficulty in controlling the plasma-to-substrate distance in a single mode, single frequency reactor and it was believed that by varying the frequency and using a multimode cavity one could solve this problem. Thus, depositions on a titanium rod were performed in a variable frequency MPCVD reactor. It was determined visually that the variable frequency operation provided uniform plasma distribution along the length and circumference of the rod and resulted in a fairly uniform coating. However, scanning electron microscopy revealed that the morphology of the particles was poor and micro-Raman spectroscopy showed weak, broad peaks that were attributable to amorphous carbon. It is believed that by fine-tuning parameters, a uniform diamond film of good quality can be achieved along the entire rod.