bluuebunny/crossref_metadata_2025_split huggingface dataset:
Effects of Changing Body-Checking Rules on Rates of Injury in Minor Hockey
Authors: Kukaswadia Atif , Warsh Joel , Mihalik Jason P. , Pickett William 
Published: March 2010

OBJECTIVE:
In this study we explored the effects of the 2002 rule change in Ontario minor hockey, in which body-checking was introduced at the atom (ages 9–10) instead of the peewee (previously ages 12–13) age level. It was hypothesized that the introduction of body-checking at younger ages would result in higher overall rates of injury to minor hockey players, with concomitant increases in neurotraumatic injuries.

PATIENTS AND METHODS:
Participants included injured minor hockey players between the ages of 7 and 14 years in the Kingston area of Ontario, Canada. The Kingston sites of the Canadian Hospitals Injury Reporting and Prevention Program were used to identify injuries that presented to the only 2 emergency departments in this community. In our analyses, we compared rates and patterns of injury that required hospital-based emergency medicine care before (1997–1998 to 2001–2002 seasons) and after (2002–2003 to 2006–2007 seasons) implementation of the body-checking rule change.

RESULTS:
Overall rates of injury to minor hockey players declined in the years after the rule change. Rates of injury attributable to body-checking, as well as the natures and anatomic sites of injury caused by body-checking, remained consistent in the 2 study periods.

CONCLUSIONS:
In this historical study, we did not observe an increase in the overall rates of injury and concomitant neurotraumatic events. Increased enforcement of playing rules as well as temporal declines in emergency department use may have contributed to these findings.
Adherence to Vitamin D Recommendations Among US Infants
Authors: Perrine Cria G. , Sharma Andrea J. , Jefferds Maria Elena D. , Serdula Mary K. , Scanlon Kelley S. 
Published: March 2010

OBJECTIVES:
In November 2008, the American Academy of Pediatrics (AAP) doubled the recommended daily intake of vitamin D for infants and children, from 200 IU/day (2003 recommendation) to 400 IU/day. We aimed to assess the prevalence of infants meeting the AAP recommended intake of vitamin D during their first year of life.

METHODS:
Using data from the Infant Feeding Practices Study II, conducted from 2005 to 2007, we estimated the percentage of infants who met vitamin D recommendations at ages 1, 2, 3, 4, 5, 6, 7.5, 9, and 10.5 months (n = 1952–1633).

RESULTS:
The use of oral vitamin D supplements was low, regardless of whether infants were consuming breast milk or formula, ranging from 1% to 13%, varying by age. Among infants who consumed breast milk but no formula, only 5% to 13% met either recommendation. Among mixed-fed infants, 28% to 35% met the 2003 recommendation, but only 9% to 14% would have met the 2008 recommendation. Among those who consumed formula but no breast milk, 81% to 98% met the 2003 recommendation, but only 20% to 37% would have met the 2008 recommendation.

CONCLUSIONS:
Our findings suggest that most US infants are not consuming adequate amounts of vitamin D according to the 2008 AAP recommendation. Pediatricians and health care providers should encourage parents of infants who are either breastfed or consuming &lt;1 L/day of infant formula to give their infants an oral vitamin D supplement.
Reliability in Mechatronics Systems from TEM, SEM and SE Material Analysis
Authors: Dahoo Pierre , Alayli Nadim , Girard Armelle , Pougnet Philippe , Tan Ky-Lim , Morelle Jean-Michel 
Published: March 2010

AbstractMechatronic systems designed to comply to new EU directives are studied through interconnections by electronic or photonic probes, SEM, TEM, SE or 3D Tomography. Leaded and lead free modules assembled by standard interconnection technologies are studied for robustness relative to thermal accelerated life tests. Results obtained from JEOL 6060LV SEM and Optical Microscopy show that although slow growth rate of inter-metallics (IMC) is consistent with expected reliability, they are responsible for propagation of cracks especially in the presence of gold on PCB side. Innovative Low Temperature Joining (LTJ) technology applied to nano or micro silver pastes which should reduce IMC effects are tested on mechatronic systems. Results obtained from SEM, TEM and 3D Tomography will be shown as well as non destructive Spectroscopic Ellipsometry studies of samples. Pressureless LTJ technology is unsuitable for robust interconnection.
Microstructure Study of the Oxidation of TiN Layers During Sputtering Process
Authors: Wang Chun 
Published: March 2010

AbstractTiN provides a good template layer for the epitaxial SrTiO3 (001) growth on Si(001) single crystal substrates by RF sputtering. However, TiN template layer was oxidized into TiO2 during the subsequent sputtering process of electrodes of SrRuO3. The effect of Ru ion catalyzed oxidation and delamination of the TiN layer has been studied using transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The epitaxial orientation relationship of the SrRuO3 and SrTiO3 was reserved to be cube on cube with respect to Si and the crystal quality of the SrRuO3/SrTiO3 film remained even when the TiN template layer was oxidized. The stress in the thin film of SrRuO3/SrTiO3/TiN structure could be determined from the buckle shape in both plan view and cross sectional TEM images.
Large Area Flexible Electronics Fabrication by Selective Laser Sintering of Nanoparticles with a Scanning Mirror
Authors: Ko Seung Hwan , Pan Heng , Hotz Nico , Grigoropoulos Costas P. 
Published: March 2010

AbstractThe development of electric circuit fabrication on heat and chemically sensitive polymer substrates has attracted significant interest as a pathway to low-cost or large-area electronics. We demonstrated the large area, direct patterning of microelectronic structures by selective laser sintering of nanoparticles without using any conventional, very expensive vacuum or photoresist deposition steps. Surface monolayer protected gold nanoparticles suspended in organic solvent was spin coated on a glass or polymer substrate. Then low power continuous wave Ar-ion laser was irradiated as a local heat source to induce selective laser sintering of nanoparticles by a scanning mirror system. Metal nanoparticle possessed low melting temperature (<150°C) due to thermodynamic size effect, and high laser absorption due to surface plasmon mode. These make metal nanoparticles ideal for the low temperature, low laser energy selective laser processing, and further applicable for electronics fabrication on a heat sensitive polymer substrate. We extended our laser selective sintering of nanoparticles research to a large area (> 4” wafer) using scanning mirror to demonstrate current technology for industry level fabrication.
In Situ Surface Photovoltage Spectroscopy of ZnO Nanopowders Processed by Remote Plasma
Authors: Peters Raul M. , Glancy Stephen P. , Paramo J. Antonio , Strzhemechny Yuri M. 
Published: March 2010

AbstractIn many instances the quality of the surface in ZnO nanoscale systems is a key performance-defining parameter. The surface itself could be a very significant source of lattice defects as well as contaminating impurities, and this influence may extend into the sub-surface vicinity. In our work, key element of the surface analysis is the surface photovoltage (SPV) spectroscopy known for its advantages, such as: identification of conduction vs. valence band nature of the defect-related transitions and the defect level positions within the band gap, ability to measure relatively low densities of surface defects as well as their cross sections. Additional information can be obtained from the SPV transient measurements. In our system, SPV characterization is run in high vacuum, complemented by in situ remote plasma treatment. This combination of surface-sensitive and surface-specific tools is well-suited for studying surface properties with a high degree of reliability since there is no exposure to common air contaminants between processing and characterization cycles. We employed O/He remote plasma treatments of ZnO nanocrystalline surfaces. In situ SPV spectra and transient measurements of the as-received and processed samples revealed, on the one hand, a number of common spectral features in different ZnO nanopowder specimens, and, on the other hand, a noticeable plasma-driven changes in the surface defect properties, as well as in the overall electronic and optical surface characteristics.
Residual Stresses in Sputtered ZnO Films on (100) Si Substrates by XRD
Authors: Conchon Florine , Renault Pierre-Olivier , Goudeau Philippe , Le Bourhis Eric , Sondergard Elin , Barthel Etienne , Grachev Sergey , Gouardes Eric , Rondeau Veronique , Gy René , Lazzari Remi , Jupille Jacques , Brun Nathalie 
Published: March 2010

AbstractResidual stresses in sputtered ZnO films on Si are investigated and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films encapsulated or not by Si3N4 protective coatings are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After a heat treatment at 800°C, ZnO films are tensily stressed while ZnO films encapsulated by Si3N4 are stress-free. With the aid of in-situ X-ray diffraction, we argue that this thermally-activated stress relaxation can be attributed to a variation of the chemical composition of the ZnO films.
Comparison of APCVD to LPCVD Processes in the Manufacturing of ZnO TCO for Solar Applications
Authors: Zhang Wei , salagaj tom , Wei Jiuan , jensen christopher , strobl karlheinz 
Published: March 2010

AbstractA FirstNano EasyTube 3000 CVD system with a 3” diameter horizontal tube furnace was used to investigate the optimization of both APCVD (Atmospheric Pressure Chemical Vapor Deposition) and LPCVD (Low Pressure Chemical Vapor Deposition) processes to grow both boron and fluorine doped ZnO films with a sheet resistance, slice resistance and haze suitable for their potential utilizations as TCO (Transparent Conductive Oxide) layers for photovoltaic applications. Growth rates as high as 100 nm per minute have been obtained in some parameter regions for both processes. In both cases the resulting material property parameters were the same or better than reported in the literature. Although the horizontal hot wall CVD R&D reactor is not optimum for uniform TCO thin film deposition it allowed us to investigate the interrelationship of the most critical parameters with the resulting material properties.The driving force for this work is the ultimate goal of demonstrating a process parameter solution suggesting that ZnO films (usable for either display system manufacturing and/or photovoltaic applications) can be deposited with optimized material properties that are comparable to LPCVD or sputtering processes, but that the APCVD solution could be more economical for large scale thin film ZnO coating implementation. Ultimately our desire is to transfer such a ZnO deposition process to our proprietary, APCVD CVDgCoat™ platform, which has the ability to coat up to 4 meter wide glass sheets and metal foils.
Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE
Authors: Ma Bei , Miyagawa Reina , Miyake Hideto , Hiramatsu Kazumasa 
Published: March 2010

AbstractSelective area growth (SAG) of a-plane GaN grown on r-plane sapphire with a stripe orientation along <1-100> was investigated. The key technology of facet-control is optimizing the growth temperature and the reactor pressure. Our experiments reveal that the growth temperature determined facet form: in samples grown at 1000 °C, the structure consists of {11-22}and (000-1); with increasing growth temperature to 1050 °C, the area of {11-22} facet gradually decreases, and two new planes, (0001) and {11-20} facets form; eventually, in samples grown at 1000 oC, the {11-22} facet completely disappears, (0001) and {11-20} facet continue to increase to form a rectangle cross-section. The reactor pressure determines the ratio of the lateral growth rate and the vertical growth rate: with reactor pressure decreasing from 500 torr to 100 torr, the rectangle structure gradually decreases the height and increases the width, and the volume nearly keeps constant.
Improvement of Photoelectrochemical Reaction for Hydrogen Generation from Water using N-face GaN
Authors: Fujii Katsushi , Sato Keiichi , Kato Takashi , Minegishi Tsutomu , Yao Takafumi 
Published: March 2010

AbstractPhotoelectrochemical properties of Ga- and N-face GaN grown by hydride vapor phase epitaxy (HVPE) were investigated. The properties were also compared with Ga-face GaN grown by metal-organic vapor phase epitaxy (MOVPE). The flatband potentials were in order of Ga-face GaN grown by MOVPE < N-face GaN < Ga-face GaN. The highest photocurrent density at zero bias was obtained from the N-face GaN. The photocurrent density was over 3 times larger than that of Ga-face GaN.
Electron Emission from Diamond (111) p+-i-n+ Junction Diode
Authors: Takeuchi Daisuke , Makino Toshiharu , Kato Hiromitsu , Ogura Masahiko , Tokuda Norio , Oyama Kazuhiro , Matsumoto Tsubasa , Hirabayashi Izumi , Okushi Hideyo , Yamasaki Satoshi 
Published: March 2010

AbstractWe successfully observed electron emission from hydrogenated diamond (111) p+-i-n+ junction diodes. Here, p+- and n+-layers mean that the boron and phosphorous impurity concentrations in these layers are around 1020 cm-3. Then the p+-layer on top of the diode suppresses electron emission from the top-surface area. The heavily doped layers also play an important role to obtain high diode and emission currents. The emission started when the applying bias voltage was equal to the built-in potential, and the emission current reached to over 1 μA at room temperature operation. With taking into account our previous photoemission yield spectroscopy results and with the very high binding energy of free excitons of 80 meV in diamond, we suggested that the electron emission was derived from free excitons generated in the i-layer of the diodes.
Comparison Between Chemical and Plasmatic Treatment of Seeding Layer for Patterned Diamond Growth
Authors: Kromka Alexander , Babchenko Oleg , Rezek Bohuslav , Hruska Karel , Purkrt Adam , Remes Zdenek 
Published: March 2010

AbstractWe employ UV photolithographic and electron beam lithographic patterning of diamond seeding layer on SiO2/Si substrates for the selective growth of micrometer and sub-micrometer diamond patterns. Using bottom-up strategy, thin diamond channels (470 nm in width) are directly grown. Differences between wet chemical and plasma treatment on the patterned diamond growth are studied. We find that the density of parasitic diamond crystals (outside predefined patterns) is lowered for gas mixture CF4/O2 plasma than for rich O2 plasma. After CF4/O2 plasma treatment, the density of parasitic crystals is 106 cm-2 which is comparable to the wet chemical treatment. Introducing sandwich-like structure, i.e. photoresist-seeding layer-photoresist, and its treatment (lift-off and CF4/O2 plasma) further reduces the density of parasitic crystals down to 105 cm-2. The advantage of this novel treatment is short processing time, simplicity, and minimal damage of the substrate surface.
Growth of Carbon Nanotubes on Copper Substrates Using a Nickel Thin Film Catalyst
Authors: Atthipalli Gowtam , Kumta Prashant , Wang Wei , Epur Rigved , Jampani Prashanth H , Allen Brett L. , Tang Yifan , Star Alexander , Gray Jennifer 
Published: March 2010

AbstractCarbon nanotubes with their attractive properties, one-dimensional character, and their large aspect ratio are ideal candidates for a variety of applications including energy storage, sensing, nanoelectronics, among others. We have studied the growth of carbon nanotubes on copper substrates using a nickel thin film as a catalyst. The catalyst was sputtered in a chamber having a base pressure in the ultra-high-vacuum regime. By adjusting the sputtering parameters, the effects of the morphology and the thickness of the nickel catalyst on the growth of carbon nanotubes have also been investigated. Multiple hydrocarbon sources as carbon feedstock (methane, acetylene and xylene) and corresponding catalyst precursors and varying temperature conditions were used during the Chemical Vapor Deposition (CVD) process to understand and best determine the ideal conditions for carbon nanotube growth on copper. Correlation between the thickness of the thin film nickel catalyst and the carbon nanotube diameter is also presented in the study. Characterization techniques used to study the morphology of the CNTs grown on copper include SEM, TEM and HRTEM, Raman Spectroscopy
Carbon Onion Films-Molecular Interactions of Multi-Layer Fullerenes
Authors: Alduhaileb Raed A. , Ayres Virginia M. , Jacobs Benjamin W. , Fan Xudong , McElroy Kaylee , Crimp Martin , Hirata Atsushi , Horikoshi Mutsumi 
Published: March 2010

AbstractThe evolution of carbon onion structure from spherical to polyhedral is correlated with changes in the sp3/sp2 ratio as a function of increasing synthesis temperature using electron energy loss spectroscopy, scanning electron microscopy, and high resolution electron microscopy. Results that are obtained using asymmetric f-variance versus symmetric Gaussian deconvolution of electron energy loss spectra are compared. The possibility of a separate peak at 287 eV is discussed.
Photoelectrochemical Properties of Carbon Nanotube/SnO2 Nanostructures Prepared by Three Different Methods
Authors: Muchharla Baleeswaraiah , Dong Lifeng 
Published: March 2010

AbstractIn this work, we employed three different methods to fabricate solar cell structures on indium tin oxide (ITO) substrates. For the first method, multi-layered structures were prepared by using single walled carbon nanotubes (SWCNTs) and tin oxide (SnO2). First, a SWCNT layer was deposited on the ITO substrate; and photoactive material was then coated on the top of the SWCNT layer. For the second method, photoactive particles were added to a solution of SWCNTs. The SWCNT/SnO2 solution was mechanically stirred and then deposited on the ITO substrate. For the third method, we synthesized photoactive particles on SWCNTs through a chemical-solution routine using SnCl4 as a precursor. We characterized the morphology and structure of the SWCNTs coated with SnO2 nanoparticles prepared with the three different methods by using a field emission scanning electron microscope equipped with an X-ray energy dispersive spectrometer. We characterized the photoelectrochemical properties of all electrodes by using an electrochemical station; mainly, we examined the photocurrent generated under periodic illumination. Our results indicate that there are significant differences in the photocurrent in the presence of SWCNTs. We propose the following hypothetical mechanism: without carbon nanotubes, generated electrons (when light is absorbed by SnO2 particles) must cross the particle network to reach an electrode. Many electrons never escape this network to generate an electrical current. The carbon nanotubes “collect” the electrons and provide, therefore, a more direct route to the electrode, thus improving the efficiency of the solar cells.
Dynamic Mechanical Analysis of Bulk Carbon Nanotube Materials
Authors: Moses Brian T. , Jarosz Paul R. , Schauerman Christopher M. , Alvarenga Jack , Landi Brian J. , Raffaelle Ryne 
Published: March 2010

AbstractSeveral purification and processing techniques for laser-produced single wall carbon nanotube (SWCNT) soot were investigated and the resulting changes in the mechanical properties were characterized. SWCNT ribbons had non-nanotube carbonaceous content modified via thermal oxidation and the relationship between oxidation parameters and mechanical strength studied. SWCNT/Polyamide composites were developed and exhibited improved toughness, tensile strength and elongation before break. The composite material is observed to have a greater tensile strength than either the baseline paper or the added nylon.
Autoreduction of Metallic Species on the Surface of Silica Nanoparticles by Surface Functionalization
Authors: Samuel Jorice , Raccurt Olivier , Ling Wai Li , Poncelet Olivier J.C. 
Published: March 2010

AbstractSilica nanoparticles with metallic nanoclusters are of great interest in many applications from bio imaging to optical devices. The nanometric size of metallic particles induces specific absorption properties due to surface plasmon resonance. This absorption mainly depends on the morphology of the nanoparticles. If the encapsulation of metallic nanoparticles into a silica shell is now well developed, there is a great interest on the synthesis of either silica nanoparticles covered by metallic nanoparticles or silica cores with metallic shells. Two main ways are described in the literature to bind metallic nanoparticles onto the silica nanoparticles. The first way consists on the mixing of a metallic colloidal sol with another sol containing silica nanoparticles bringing at their surface the suitable chemical functions, able to properly interact with the metal nanoparticles. The second way consists on the use of a reducing agent to reduce the metallic ions introduced successively into a suspension of silica nanoparticles. Herein is proposed an original third method based on a double surface functionalization of the silica nanoparticles. This method is actually based on an in-situ reduction of metallic ions by two chemical function (amino and thiol) previously grafted onto the surface of the silica nanoparticles. The silica nanoparticles are synthesized by a reverse micro-emulsion sol-gel process. This synthesis gives monodispersed silica nanoparticles of 40 nm diameter. The surface functionalization of the silica nanoparticles is performed by sol-gel reactions within the micro-emulsion, using two silane-coupling agents owning either a thiol function or a diamino function.The functionalized silica shell increases the chemical activity of the surface of the nanoparticles. But the capability of this functionalized surface to reduce metallic ions depends mainly on the chemical function used. Two examples are given in this study: the diamino functions, which reduce the copper ions, and the combination of the diamino and the thiol functions in a silver nitrate solutionwhich induces the growth of small silver nanoparticles (4-5 nm) on the silica nanoparticles’ surface.
Si/SiO2 Quantum Dots: Electronic Properties
Authors: Filikhin Igor N , Matinyan Sergei G , Vlahovic Branislav 
Published: March 2010

AbstractSpherical shaped Si quantum dots (QDs) embedded into the SiO2 substrate are considered in the single sub-band effective mass approach. The electron and heavy hole sub-bands are taken into account. The energy dependence of electron effective mass is applied especially for small size QD. Calculations of low-lying single electron and hole energy levels are performed.
For QD of small sizes (diameter D≤6 nm) there is a strong confinement regime when the number of energy levels is restricted to several levels. The first order of the perturbation theory is used to calculate neutral exciton recombination energy taking into account the Coulomb force between electron and heavy hole. The PL exciton data are reproduced well by our model calculations. We also compare the results with those obtained within model [1].
For weak confinement regime (size D≥10 nm), when the number of confinement levels is limited by several hundred, we considered the statistical properties of the electron confinement. Distribution function for the electron levels is calculated and results are discussed.