bluuebunny/crossref_metadata_2025_split huggingface dataset:
An Analysis Of Void Nucleation In Passivated Interconnect Lines Due To Vacancy Condensation And Interface Contamination
Authors: Gleixner R. J. , Nix W. D. 
Published: April 2011

AbstractNucleation of voids due to vacancy condensation in passivated aluminum lines is analyzed within the context of classical nucleation theory. A discussion of sources of hydrostatic tensile stress in such lines provides a reasonable upper limit of 2 GPa. The void nucleation rate is then calculated at various sites within the line. Results suggest that nucleation rates are far too low to account for observed rates of voiding. Void nucleation at a flaw at the line/passivation interface is then considered as an alternative nucleation mechanism. Such flaws may be created by contaminants introduced during fabrication of the line. In this case, nucleation is feasible at greatly reduced stresses, well within the observed values. Furthermore, a simple model of void growth indicates that a fast atomic transport path, such as a grain boundary, must intersect the void for an appreciable growth rate. These results suggest that void nucleation in aluminum interconnect lines occurs at flaws at the sidewall of the line and that stress-induced and electromigration-induced voiding can be controlled by eliminating interfacial contamination.
Measurements Of Stress Evolution During Thin Film Deposition
Authors: Chason E. , Floro J. A. 
Published: April 2011

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.
Isothermal Stress Relaxation In Al, AlCu and AlVPd Films
Authors: Lokker J. P. , Jongste J. F. , Janssen G. C. A. M. , Radelaar S. 
Published: April 2011

AbstractMechanical stress and its relaxation in aluminum metallization in integrated circuits (IC) are a major concern for the reliability of the material. It is known that adding Cu improves the reliability but complicates plasma etching and increases corrosion sensitivity. The mechanical behavior of AIVPd, AlCu and Al blanket films is investigated by wafer curvature measurements. During thermal cycling between 50°C and 400°C the highest tensile stress is found in AIVPd. In a subsequent experiment, the cooling was interrupted at several temperatures to investigate the stress behavior during an eight hour isothermal treatment. Isothermal stress relaxation has been observed in the three types of films and is discussed.
Electromigration Characterization for Multilevel Metallizations using Textured AlCu
Authors: Ting Larry M. , Hong Qi-Zhong 
Published: April 2011

AbstractElectromigration lifetime dependence on crystallographic texture for AlCu interconnects is determined. It is found that enhancement of AlCu texture at <111> orientation improves EM endurance. But this beneficial effect is limited after a certain level of texture enhancement is reached. The effect of lifetime improvement is proved to result from a decrease in atomic diffusivity. Saturation of the lifetime improvement effect for highly textured AlCu indicates a change in the main diffusion mechanism for electromigration, possibly from the regular grain boundary diffusion to diffusion through edge dislocations.
Improvement in Platinum Silicidation for 0.8 m BICMOS Process
Authors: Parikh Suketu , Modi Gaurang , Nagalingam Samuel 
Published: April 2011

AbstractPlatinum Silicidation involves interdiffusion of Pt and Si which finally results in the formation of PtSi. The quality of Platinum Silicide strongly influences the electrical properties such as schottky barrier height and its contact resistance. We demonstrate a two step process using rapid thermal processing (RTP) with 400 °C 30 sec silicidation in N2 atmosphere, followed by 500 °C 30 sec oxidation in O2/N2 mix. The two temperature step process gave better electrical and material characteristics compared to a single step silicidation at 400°C with N2/O2 mix. The two step silicidation recipe also had lower sheet resistance, no unreacted platinum (based on X-ray diffraction analysis) and uniform SiO2 layer (based on Auger Electron Specrtroscopy) on top of silicide, to protect it from aqua regia.
Rapid Thermal Magnetic Annealing: A Novel Technique in Thin-Film Recording Head Production?
Authors: Roozeboom Fred , Ruigrok Jaap J. M. , Klaassens Wilco , Kegel Herbert , Falter Manfred , Walk Heinrich 
Published: April 2011

AbstractA new emerging application area for Rapid Thermal Annealing (RTA) may be in the manufacturing of thin-film recording heads for high-density (hard disk drive, video, audio and data tape) recording. To that end we co-designed a new commercial reactor with an external electromagnet to anneal thin soft-magnetic films (nanocrystalline iron alloys) deposited on ceramic wafers of up to 150 mm diameter. The electromagnet generates a field controllable up to 660 Oe (52.8 kA/m). It is completely homogeneous in direction (i.e. fully parallel field lines) across the entire wafer area. Wafers can be annealed either statically, or while rotating (up to 120 rpm), or in two subsequent heating steps with a 90° wafer rotation in between.Nanocrystalline Fe-Nb-Si-N layers have better soft-magnetic properties after Rapid Thermal Magnetic Annealing (RTMA) in a static magnetic field than after conventional furnace annealing in a static field. Temperature-programmed resistance measurements and Transmission Electron Microscopy (TEM) show that the first nanocrystalline, body-centered cubic iron grains start growing already as of 350 °C from the amorphous as-deposited film, whereas the desired segregation of NbN starts only as of 530°C. RTA can be used to promote the kinetics of the segregation of NbN along the boundaries of nanocrystalline iron nuclei. This prevents the iron grains from further growth: with RTMA the iron alloys show smaller nanocrystalline iron particles (order: 10 nm) as observed by TEM.
Monte Carlo Thermal Model of an Integrating Light Pipe for Rapid Thermal Processing
Authors: Thomas J. C. , Dewitt D. P. 
Published: April 2011

AbstractA Monte Carlo model is developed to simulate transient wafer heating as a function of system parameters in a kaleidoscope- or integrating light-pipe type cavity with square cross-section. Trends in wafer temperature uniformity are examined as a function of length-to-width ratio, cavity width, and the number of heating lamps. The effect on temperature determination by a radiometer placed in the bottom end wall of the cavity is simulated.
Electron Cyclotron Resonance in Strained Si and Si0.94Ge0.06 Channels on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition
Authors: Liu C. W. , Venkataramana V. 
Published: April 2011

AbstractWe report the far-infrared measurements of the electron cyclotron resonance absorption in n-type Si/Si0. 62Ge0.38 and Si0.94Ge0.06 /Si0. 62Ge0.38 modulation- doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 μm uniform Si0.62Ge0.38 layers and 0.5 μm compositionally graded relaxed SiGe layers from 0% Ge to 38 % Ge. The buffer layers were annealed at 800 °C for 1 hr to obtain complete relaxation. The samples had 100 Å spacers and 300 Å 2×1019 cm-3 n-type supply layers on the tops of the 75 Å channels. The far-infrared measurements of electron cyclotron resonance were performed at 4K with the magnetic field of 4 – 8 Tesla. The effective masses determined from the slope of center frequency of absorption peak vs applied magnetic field plot are 0.20 mo and 0.19 mo for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of two dimensional electron gas in Si MOSFET (0.198mo). The electron effective mass of Si0.94Ge0.06 is reported for the first time and about 5 % lower than that of pure Si.
Nonlinear Model Reduction Strategies for Rapid Thermal Processing Systems
Authors: Banerjee Suman , Cole J. Vernon , Jensen Klavs F. , Emami-Naeni A. 
Published: April 2011

AbstractThis paper presents a systematic way of developing low order nonlinear models from physically- based, large scale finite element models of rapid thermal processing (RTP) systems. The low order model is extracted from transient results of the finite element model using the proper orthogonal decomposition (POD) method. Eigenfunctions obtained from the POD method are used as basis functions in spectral Galerkin expansions of partial differential equations solved by the finite element model to generate the reduced models. Simulation results demonstrate good agreement with steady state and transient data generated from the finite element model.
Application of Holographic Interferometry to Flow Pattern Visualization in an RTCVD Reactor
Authors: Rainova Yu. P. , Pezoldt J. , Antonenko K. I. , Eichhom G. 
Published: April 2011

AbstractThis paper presents the development of an experimental technique for the reception of holographic interferograms of H2 and Ar flows in a RTCVD reactor with a complex geometry. The obtained holographic patterns were analyzed for the reconstruction of the gas flow in the RTCVD reactor. The fringe patterns showing the gas density distributions were recalculated into temperature distributions. Experimental results were compared with the predicted flow field.
Accurate Estimation of Radiative and Convective Losses in a Multizone RTP Reactor
Authors: Nagabushnam R. V. , Singh R. K. , Sharan S. , Sandhu G. 
Published: April 2011

AbstractWe have developed a methodology aimed at accurately determining the various forms of energy transfer(convective loss, radiative loss and absorption of lamp energy by the wafer)occurring in any advanced RTP system, based on basic system identification experiments and simple 3- dimensional physical model depicting the heat transfer processes. The identification experiments help in estimating the uncertain system dependent factors which characterize the various forms of energy transfer, which may be otherwise difficult to calculate on pure theoretical basis. This methodology forms the basic building block of our effort to develop a tool which can predict the temperature distribution across the wafer in a realistic way. This tool can be used both as a wafer temperature control algorithm in any advanced RTP system by incorporating more accurate system impedance parameters(convective and radiative loss) as well as by an end user to calculate the required power level settings to various lamp zones to attain reasonable temperature uniformity for a RTP system which does not have a dynamic con-rol.
Preparation of YBCO Platelets and Films by Mod and Microwave Heating
Authors: Manfredotti C. , Castighioni M. , Polesello P. , Rizzi N. , Volpe P. 
Published: April 2011

AbstractMetal Organic Deposition (MOD) technique, which represents a flexible method for obtaining both platelets and films of YBCO, is based on baking, pyrolyzing and annealing stages of neodecanoates solutions. The annealing step is generally very long. The whole annealing stage can be simply substituted by a heat treatment (about 1 h) in a commercial microwave (MW) oven, followed by a 15 min. annealing at 900°C in a resistive furnace without oxygenation. With this process, YBCO platelets, films and wires were obtained starting from powders prepared by MO (Metal-Oxide). XRD patterns are indicative of a strong texturing by the evidence of (003) and (005) lines. By the same technique, YBCO films were prepared by spray deposition on A12O 3 for a total thickness of about 5 μm, each spray step, of 1 gm, was followed by 5 min pyrolysis at 500 °C and 1 h MW annealing.The MW technique was also used for preparation of quartz and ceramic fibers covered by YBCO.
Novel Microstructures in Microwave Sintered Silicon Nitride
Authors: Brito M. E. , Hirao K. , Toriyama M. , Hirota M. 
Published: April 2011

AbstractPreliminary results on microwave sintering of seeded silicon nitride show that a well defined bi-modal grain size distribution is attainable in Si3N4-Y2O3-Al2O 3-MgO sintered bodies by microwave sintering at 28 GHz of materials seeded with ß-Si3N4 particles (2 vol. %). A positive effect on the mechanical performance is anticipated for these microstructurally controlled silicon nitride ceramics
A comparison of mm-wave Sintering and Fast Conventional Sintering of Nanocrystalline Al2O3
Authors: Link G. , Ivanov V. , Paranin S. , Khrustov V. , Böhme R. , Müller G. , Schumacher G. , Thumm M. , Weisenburger A. 
Published: April 2011

AbstractThe phase transformation and densification behavior under high power millimeter-wave (mm-wave) radiation of a 30 GHz gyrotron and during fast conventional sintering of nanocrystalline γ-A12O3 powder have been investigated and compared. The powder used for compacts was synthesized from aluminum metal by application of the exploding wire technique in an oxidizing atmosphere. The particle size distribution of this powder has a maximum at about 20 nm. Magnetic pulse technique was applied for the compression of samples up to 80% of the theoretical density (TD). Both mm-wave sintering and fast firing in a conventional electrical resistance furnace enable the densification and a complete phase transformation into α-A12O3 already at a temperature of approximately 1150 %C. The average grain size of the sintered ceramic is in the range of 50 to 100 nm. With mm-waves densification starts at about 50 °C lower temperatures compared to conventional techniques and higher final densities were obtained already at 150°C lower temperatures.
Adhesive Bonding Via Exposure to Microwave Radiation and Resulting Mechanical Evaluation
Authors: Paulauskas Felix L. , Meek Thomas T. , Warren C. David 
Published: April 2011

AbstractAdhesive bonding/joining through microwave radiation curing has been evaluated as an alternative processing technology. This technique significantly reduces the required curing time for the adhesive while maintaining equivalent physical characteristics as the adhesive material is polymerized (crosslinked). This results in an improvement in the economics of the process. Testing of samples cured via microwave radiation for evaluation of mechanical properties indicated that the obtained values from the single lap-shear test are in the range of the conventionally cured samples. In general, the ultimate tensile strength, OB, for the microwave processed samples subjected to this single lap-shear test was slightly higher than for conventionally cured samples. This technology shows promise for being applicable to a wide range of high volume, consumer goods industries, where plastics and polymer composites will be processed.
Overview of Comnonent and Device Characterization
Authors: Rytting Doug 
Published: April 2011

AbstractThe electronics market is constantly pushing the state of the art in design to reduce cost, size, weight, and power consumption. New designs are emerging causing rapid changes in technology driving high design turnover. This drives the need for component and material measurements that will reduced design cycles and time to market. In the design and measurement of linear devices, error corrected S-parameters are traditionally measured with a network analyzer. the network analyzer combines magnitude with phase measurements for improved accuracy. Time domain techniques are used to get a better physical understanding of the device characteristics. Error correction procedures have been improved to provide high accuracy and ease of use. New methods to measure impedance results in high precision capacitor and inductor models necessary for both surface mount and integrated circuit applications. Note: In the following paper the relevant text follows each slide.
A New Approach For Dielectric Measurements At High Temperatures
Authors: Groffils C. , Luypaert P. J. , Zhou Y. , Biest O. Van der 
Published: April 2011

AbstractMost of the algorithms for cavity dielectric measurements use a full network frequency scan for the perturbation method. At high temperature the measurement points in one frequency scan will have different temperatures due to the fast cooling of the sample inside the cold cavity. This paper presents a new approach for the perturbation method to measure dielectric constants at high temperatures with a two port, two piston cylindrical cavity and external furnace. Special features of this cavity are the possibility to work with different modes and different relative positions of the coupling aperture.The dielectric properties are extracted from the full sets of S-parameters for two successive frequency points corresponding to approximately the same temperatures. An extraction algorithm is developed and programmed.
Characterization Of Thin Semiconductor Films For (Opto)Electronic Applications
Authors: Elmiger J. R. , Feist H. , Kunst M. 
Published: April 2011

AbstractA simple set-up to measure the transient photoconductivity in the microwave frequency range is presented. The effective mobility is derived from the end of pulse transient photoconductivity. This can be used for the characterization of semiconductor films. Examples of measurements on a-Si:H films are given.
An Overview Of Electromagnetic Modeling Of Single- And Multi-Mode Applicators At Emr Microwave Technology Corporation
Authors: Tranquilla J. M. , Al-Rizzo H. M. , Clark K. G. 
Published: April 2011

AbstractThis paper examines the design aspects and numerical modeling of single- and multi-mode, high power, microwave resonant cavity applicators. A novel numerical electromagnetic modeling approach, based on the finite difference solution of Maxwell's equations in the time domain, is utilized taking into account the finite conductivity and thickness of the cavity walls. Results obtained from the model enable an unambiguous choice of the optimum iris size for critical coupling; shape, dimension, orientation and number of radiating elements for a prescribed irradiation pattern of slotted waveguide feeds as well as dimensions and excitation mechanism of multimode cavities. The model also allows the evaluation of the volumetric distribution of the microwave energy at any point inside the load and may eventually be used to determine the dynamic transient temperature profiles induced during the curing process.
Influence of Specific Absorbed Microwave Power on Activation Energy of Densification in Ceramic Materials
Authors: Bykov Y. , Eremeev A. , Holoptsev V. 
Published: April 2011

AbstractCorrelation between the rate of densification in powder ceramic materials and specific absorbed microwave power is determined by the experimental method. The approach is based on a comparison of the densification curves obtained at different rates of heating. The changes in the ramping rate are provided by varying the microwave power fed into the microwave furnace. Using the energy balance for the microwave heated samples, the correlation between the apparent energy of activation at the initial stage of densification and the value of the specific microwave power absorbed in heated materials are found. The experiments with silicon nitride-based ceramics allowed to determine the reduction in the value of the activation energy resulted from an increase in the specific absorbed microwave power.
Grain Growth Behavior During Microwave Annealing of Silicon Nitride
Authors: Hirota M. , Brito M. E. , Hirao K. , Watari K. , Toriyama M. , Nagaoka T. 
Published: April 2011

AbstractA comparative study of grain growth behavior in silicon nitride under conventional and microwave annealing is presented. Microwave annealed specimens showed a faster growth rate as indicated by the quantitative microstructural analysis. The phenomenon was used in combination with seeding techniques to develop a silicon nitride exhibiting a bi-modal microstructure. Microwave annealing was carried out using a microwave radiation frequency of 28 GHz.
Observation of an Electromagnetically Driven Temperature Wave in Porous Zinc Oxide During Microwave Heating
Authors: Dadon D. , Gershon D. , Carmel Y. , Rybakov K. I. , Hutcheon R. , Birman A. , Martin L. P. , Calame J. , Levush B. , Rosen M. 
Published: April 2011

AbstractPropagation of a sharp temperature wave was observed during microwave heating of porous zinc oxide in nitrogen and argon atmospheres. This wave initiated from the center of the sample and traveled at an average velocity of 0.2 cm/min towards its surface. This temperature wave was attributed to an anomalous peak in the imaginary part of the complex permittivity possibly caused by desorption of chemisorbed oxygen from the surfaces of ZnO crystallites.
Millimeter Wave Material Separation System
Authors: Birken S. , Birken K. , Connor K. , Scheitrum G. 
Published: April 2011

AbstractA new process is in development that uses high power millimeter wave energy to separate specific components from a composite material stream. The component to be separated from the material stream must have a combination of high loss tangent and low permittivity with respect to the other materials involved. In this case, when the material is subjected to a high power, high frequency RF source, the desired component can be vaporized and extracted without transferring significant heat to the remaining material. Since absorption increases significantly with frequency, it is important to use a millimeter wave source. A vacuum pump with sufficient pumping speed can transport the vaporized component for collection. The bulk material can either be collected or recycled through the system for further extraction.
Design of Microwave Vitrification Systems for Radioactive Waste
Authors: White T. L. , Bostick W. D. , Wilson C. T. , Schaich C. R. 
Published: April 2011

AbstractOak Ridge National Laboratory (ORNL) is involved in the research and development of highpower microwave heating systems for the vitrification of Department of Energy (DOE) radioactive sludges. Design criteria for a continuous microwave vitrification system capable of processing a surrogate filtercake sludge representative of a typical waste-water treatment operation are discussed. A prototype 915-MHz, 75-kW microwave vitrification system or “microwave melter” is described along with some early experimental results that demonstrate a 4 to I volume reduction of a surrogate ORNL filtercake sludge.