bluuebunny/crossref_metadata_2025_split huggingface dataset:
Tensile Deformation of Cast Iron During Pearlite :Austenite Transformation
Authors: Hazotte A. , Simon A. 
Published: March 2011

ABSTRACTRemarkable elongations have been obtained on cast iron samples subjected to alternate thermal cycles around the A1critical point, under a tensile stress lower than the yield stresses of the stable phases. This procedure makes use of the “phase transformation plasticity”, characterised by an apparent softening of the material during its structural evolution. The influence of the applied stress, as well as the heating and cooling rates,on the elongation per cycle has been studied. A quantitative comparison between this “soft” technique and the more classical high-temperature metal forming techniques (deformation in stable α or γ domains, or in α + γ domain, high temperature creep) showed that, for an equal strain, the internal cavitation resulting from the thermomechanical cycling deformation of spheroīdal graphite cast iron is much smaller than for other techniques. This soft technique leads to higher mechanical characteristics at room temperature.
Spatially and Temporally Resolved Reflectivity Profiles of
Crystalline Silicon Irradiated by 48 Ps Pulses of One-Micron Laser
Radiation
Authors: Moss Steven C. , Boyd Ian W. , Boggess Thomas F. , Smirl Arthur L. 
Published: March 2011

ABSTRACTTime-resolved reflectivity measurements have been performed on
single-crystal silicon irradiated by intense 48 ps pulses of 1 micron
radiation. The temporal evolution of the spatial profile of the
laser-induced reflectivity changes has been monitored using spatial
correlation and surface imaging techniques. These measurements resolve
apparent discrepancies between previous spatially and temporally averaged
measurements at this wavelength and similar measurements in the visible.
Time-Resolved Ellipsometry and Reflectivity Measurements of the
Optical Properties of Silicon During Pulsed Excimer Laser Irradiation
Authors: Jellison G. E. , Lowndes D. H. 
Published: March 2011

ABSTRACTSeveral advances in time-resolved optical measurement techniques have been
made, which allow a more detailed determination of the optical properties of
silicon immediately before, during, and after pulsed laser irradiation. It
is now possible to follow in detail the time-resolved reflectivity signal
near the melting threshold; measurements indicate that melting occurs in a
spatially inhomogeneous way. The use of time-resolved ellipsometry allowed
us to accurately measure the optical properties of the high reflectivity
(molten) phase, and of the hot, solid silicon before and after the laser
pulse. We obtain n = 3.8, k = 5.2 (±10.1) at λ = 632.8 nm for the high
reflectivity phase, in minor disagreement with the published values of
Shvarev et al. for liquid silicon. Before and after the high reflectivity
phase, the time-resolved ellipsometry measurements are entirely consistent
with the known optical properties of crystalline silicon at temperatures up
to its melting point.
Electron Beam Annealing of Phosphorus Implanted Cadmium
Telluride
Authors: Yang C.B. , Peng M.L. , Lue J.T. , Hwang H.L. 
Published: March 2011

ABSTRACTThe behavior of dopants in CdTe has been examined by Krogen and DeNobel and
others. The n-type material is easy to dope with good electrical activity.
The p-CdTe is more difficult to produce with concentration higher than
6×1016 cm-3. For doping levels above this, the
electrical activity of the dopant drops sharply and the hole mobility is
reduced. The difficulty in doping p-CdTe stems from both strong compensation
effects and low solubility of the usual dopant species.The electron beam pulse method has been applied to annealing phosphorus
implanted cadmium telluride. The threshold electron beam energy density
necessary to give good electrical activation and mobility have been
established in the range between 9.2-10.1 J.cm-2 for doses from
1014-1016 ions cm-2. A sheet resistance
as low as 6.32×10 Ω/  and a carrier concentration as high as
3×1018 cm-3 have been obtained. The impurity
profile of the annealed samples have been obtained by etching layer by layer
with the etching rate calibrated by chemical techniques and the impurity
concentration determined by van der Pauw/Hall technique.
Threshold Energies for the Melting of Si And Al during
Pilsed-Laser Irradiation
Authors: Ong C.K. , Tan H.S. , Sin E.H. 
Published: March 2011

ABSTRACTThe heat flow calculations have been performed to obtain the threshold
energies for the melting of Si and Al during pulsed-laser irradiations under
various laser conditions. The temperature dependent optical and thermal
properties of the solids are deduced from the available experimental data.
The melting threshold energies calculated for the solids are within the
accuracy of the experimental values.
Implanted Impurity Incorporation and Segregation Phenomena
Induced by PEBA in Silicon
Authors: Chaussemy G. , Barbier D. , Laugier A. 
Published: March 2011

ABSTRACTIn this work, the PEBA induced thermal effects have been varied to study the
diffusion of usual implanted impurities (P, As, Sb, In) and segregation
phenomena in (100) and (111) silicon. The mean melt-front velocity has been
adjusted between 1 and 4 m/s by modifying both the beam fluence and the
sample starting temperature. A model for dopant redistribution has been
developped, using a mean diffusion coefficient D and solving the one
dimensional Fick's equation. Segregation and dopant evaporation are
considered and introduced as limit conditions at the liquid-solid interface
and at the wafer surface respectively. The impurity redistribution has been
experimentally studied by SIMS profiling ; so that interfacial segregation
coefificient Ki may be deduced from comparison between experimental and
computed profiles.
Electronic Defects in Transient, Thermally Processed
Semiconductors
Authors: Johnson N.M. 
Published: March 2011

ABSTRACTThis paper summarizes the general observations that may be drawn from
numerous studies of electronic defects in transient thermally annealed bulk
single – crystal silicon and discusses the emerging subjects of electronic
defect evaluation in beam – crystallized silicon thin films and in
epitaxially – grown III – V semiconductors.
Activation of Si-N Modes in Silicon by Pulsed Laser
Annealing
Authors: Stein H. J. , Peercy P. S. , Hills C. R. 
Published: March 2011

ABSTRACTRetention and bonding of nitrogen implanted into crystalline Si were
examined by infrared absorption (ir) and transmission electron microscopy
(TEM) after furnace and pulsed laser annealing. Localized Si-N vibrational
modes for N-N pairs are observed, and the associated ir band intensities
increase upon pulsed annealing. Furnace annealing above 600°C decreases the
ir intensity for N-N pairs and fine structure defects appear in TEM.
Subsequent laser annealing removes most of the fine structure and
reactivates the pair spectrum which we interpret as dissolution of N
precipitates and pair formation upon quenching from the melt. Any realistic
model for N in Si must include the formation and consequences of N-N
pairs.
A Comparison of Millisecond Annealing of B Implants and
Isothermal Annealing for Times of a Few Seconds
Authors: Mcmahon R. A. , Hasko D. G. , Ahmed H. , Stobbs W. M. , Godfrey D. J. 
Published: March 2011

ABSTRACTThe annealing behaviour of B implants in the millisecond time regime using a
combination of swept line beam and background heating is compared with
isothermal annealing with heating cycles of a few seconds. Carrier
concentration profiles derived from spreading resistance measurements show
that under annealing conditions which restrict diffusion, millisecond
processing gives higher activation of B implants than isothermal heating.
Transmission electron microscopy shows that millisecond annealing also
results in a lower defect density than that following an equivalent
isothermal anneal.
Transient Annealing of Neutron-Transmutation-Doped
Silicon
Authors: Pollard C J , Barraclough K G , Skolnick M S 
Published: March 2011

ABSTRACTScanning electron beam annealing has been used to study the annealing of NTD
silicon in the temperature range 600-1180°C. The annealing process has been
found to be very rapid above 800°C, a 30 second anneal producing highly
uniform n-type material. Below this temperature, an initial drop followed by
a progressive rise in sample resistivity with increasing anneal time is
consistent with phosphorus dopant activation and the formation of a
defect-related acceptor complex.
Dopant Incorporation in Silicon During Nonequilibrium
Solidification: Comparison of Two Processes
Authors: Fogarassy E.P. , Lowndes D.H. , Narayan J. , White C.W. 
Published: March 2011

ABSTRACTThe incorporation properties of implanted or deposited Sb into the silicon
lattice during laser irradiation with a UV laser has been studied. For both
implanted or deposited Sb, we find a maximum substitutional concentration of
2.1 × 1021/cm3 following laser melting and
solidification at V ; 6 m/sec. In both cases, substitutional solubility is
limited by inter-facial instabilities which develop during regrowth. For the
deposited case we observe in addition a much larger cellular microstructure
which may result from convection induced instabilities.
Boron Redistribution During Transient Thermal Metal Silicide
Growth on Si
Authors: Sofield C.J. , Harper R.E. , Rosser P.J. 
Published: March 2011

AbstractWe have used the heavy ion elastic recoil technique to study B distribution
changes during Co and Ti di silicide formation on B implanted single crystal
Si wafers. B diffuses to the interface of TiSi2 and Si and to the
surface of CoSi2.
Titanium Silicidation by Halogen Lamp Annealing
Authors: Okamoto T. , Shimizu M. , Tsukamoto K. , Matsukawa T. 
Published: March 2011

ABSTRACTSilicidation of titanium on silicon is carried out with the halogen lamp
annealing. It is found that the lamp annealing is quite effective in forming
an oxide-free and homogeneous titanium disilicide layer with resistivity of
15–17 μohm·cm. Rutherford backscatterring and X-ray diffraction studies show
that the halogen lamp annealing over 650 °C for only 60 sec results in
disilicide. By a silicidation reaction, arsenic and boron atoms at silicon
beneath a titanium layer are incorporated into a formed silicide layer.
Arsenic atoms initially in a titanium layer are swept toward the surface as
silicidation reaction proceeds. Arsenic atoms in titanium have an effect to
retard silicidation reaction.
Luminescence of Si-Implanted InP After Rapid Thermal
Annealing
Authors: Kirillov D. , Merz J. L. 
Published: March 2011

ABSTRACTChanges in the luminescence spectra of InP caused by Si+
implantation and subsequent rapid lamp annealing were studied. It was found
that the best activation of dopants was obtained in the case of hot
implantation and lamp annealing in regimes close to melting of InP.
The Application of Laser Annealing to the Fabrication of Impatt
Diode Structures
Authors: Adams Anthony E , Hing L A 
Published: March 2011

ABSTRACTThe conventional method for fabricating silicon IMPATT diode structures
involves the epitaxial growth of successive n- and p-type layers onto a
n+ substrate followed by a boron diffusion to form the final
p+ layer. The high temperature time cycles experienced by the
structure during these processes cause junction interfaces to become
degraded through dopant diffusion. In this paper we examine the application
of laser processing techniques to the epitaxial regrowth of low temperature
deposited layers and report on the nature of the recrystallised
material.
Disorder Production at Metal-Silicon Interfaces by MeV/amu Ion
Irradiation
Authors: Headrick F. L. , Seiberling L. E. 
Published: March 2011

ABSTRACTWe have shown that irradiation of Ag-Si and Au-Si interfaces by 14 MeV 016
ions can produce non-registered silicon at the metal-silicon interface.
Evidence that this effect is due to electronic energy loss of the bombarding
ion is presented. The possible relationship of this effect to MeV-ion
enhanced adhesion is discussed.
Si-On-Insulator Formation Using a Line-Source Electron
Beam
Authors: Knapp J.A. 
Published: March 2011

ABSTRACTA line-source electron beam has been used to melt and recrystallize isolated
Si layers to form Si-on-Insulator structures, and the processis simulated by
heat flow calculations. Using sample sweep speeds of 100-600 cm/s and peak
power densities up to 75 kW/cm2 in the 1 × 20 mm beam, we have
obtained single-crystal areas as large as 50 × 350 μIm. Seed openings to the
substrate are used to control the orientation of the regrowth and the heat
flow in the recrystallizing film. A finite-element heat flow code has been
developed which correctly simulates the experimental results and which
allows the calculation of untried sample configurations.
Thermal Profiles in Silicon-On-Insulator (Sod Material
Recrystallized With Scanning Light Line Sources
Authors: Kubota Katsuhiko , Hunt Charles E. , Frey Jeffrey 
Published: March 2011

ABSTRACTA two dimensional solution of the classical heat equation is obtained and
used to predict thermal profiles during line source zone melting
recrystallization of silicon on insulators. A macroscopic solidification
model is used to find the extent of the molten zone in multilayered
structures. The problems of convergence associated with moving phase
boundaries are reduced by using transformed temperature and the enthalpy
model The resultant isotherms, obtained at varying zone scan speeds,
indicate optimum experimental conditions.
Two-Step Laser Recrystallization of Silicon Stripes in
Sio2 Grooves for Crystallographic Orientation
Control
Authors: Egami K. , Kimura M. , Hamaguchi T. , Endo N. 
Published: March 2011

ABSTRACTWe demonstrate a new two step laser recrystallization for crystallographic
orientation control. In the cw Ar ion laser recrystallization of silicon
stripes in the structure consisting of SiO2
grooves/polycrystalline Si sublayer/backing substrates, first, one edge of
poly-Si stripes is intentionally recrystallized under relatively low laser
power and a long dwell time in order to form a strong <100> texture
with lamellar grains, second, poly-Si stripes are fully recrystallized using
the above <100> texture as seed crystals by scanning a laser beam
along the stripes. We discuss a strong <100> texture formation related
to partially molten state in the first process of secondary seed formation,
and use of a grooved structure with poly-Si sublayer suppressing edge
nucleation during lateral epitaxy.
X-Ray Studies of Strain in Laser-Crystallized SOI
Films
Authors: Rivier Michel , Reidinger F. , Goetz G. , Mckitterick J. , Cserhati A. 
Published: March 2011

ABSTRACTWe have used x-ray diffraction to measure the strain perpendicular to the
substrate surface in laser crystallized silicon films on oxidized silicon
and fused quartz substrates. The dependence of the strain on
grainorientation was determined and the influence of the scan speed, the
insulating oxide thickness, and subsequent high temperature exposure was
examined. Maximum strain was obtained for grains oriented with the (100)
plane parallel to the substrate surface. The strain decreased with
increasing angle between the surface plane and the (100) plane of the
grains. The stress parallel to the surface in the variously oriented grains
was calculated from the stiffness tensor, assuming an isotropic, in-plane
stress, and a variation similar to the strain was found. The strain found on
oxidized wafers was about half that on fused quartz. Its dependence upon the
oxide thickness (0.2 μm to 1.0 μm) was not significant for scan speeds under
10 cm/sec. Similarly, the variation in strain with scan speed was very small
for speeds below 10 cm/sec. Scan speeds above 50 cm/sec caused significant
increases in the strain.The measured strain was reduced by high temperature anneals. A 1100°C anneal
reduced the average strain by 60% and caused a clear reduction in grain
imperfections (as determined by diffracted beam width). However, a 900'C
anneal increased the diffracted beam widths even though the average strain
was reduced by about 30%.
Picosecond Photon-Solid Interaction Phase Transition in
Silicon
Authors: Malvezzi A.M. , Kurz H. , Bloembergen N. 
Published: March 2011

ABSTRACTFour different regimes of photoelectric emission are observed over a vide
fluence range of UV-laser pulses irradiating single-crystal silicon samples.
The role of the electron-hole plasma in the nonlinear photoemission is
demonstrated by temporal correlation measurements. A regime where ion
thermal evaporation processes take place is observed above the critical
fluence for melting. At higher laser fluences nonlinear ion acceleration is
demonstrated by direct time-of-flight measurements.
Pulse-Duration-Dependent-Free-Carrier-Absorption in
Semiconductors
Authors: Mukherjee P. , Sheik-Bahaei M. , Kwok H.S. 
Published: March 2011

ABSTRACTThe free carrier absorption in InSb was found to depend on the pulse
duration of the picosecond CO2 laser pulse. This is interpreted as the
effect of incomplete carrier relaxation within the laser pulse duration. An
electron energy relaxation time of 5.6 ps was derived from the observation.
The present experiment presents a new method of measuring relaxation times
in semiconductors and metals.
The Diffusion of Phosphorus in Silicon from High Surface Concentrations
Authors: Schaake H. F. 
Published: March 2011

ABSTRACTAn interstitial model is developed to quantitatively account for the anomalous effects which accompany the diffusion of phosphorus in silicon from high surface concentrations. Phosphorus is assumed to diffuse as both a positively charged (intrinsic diffusion) and an uncharged interstitial (high concentration case). Silicon is assumed to diffuse as both an uncharged (instrinsic) and a negatively charged interstitial (high phosphorus concentrations). The effect of internal fields on charged species is included. An excellent fit is found with published experimental data if a surface enhancement factor, analogous to that for the case of oxidation enhancement, is used. Flat-top diffusion is modelled by assuming the formation of a dislocation array, which alters the point defect equilibria.
Intrinsic Gettering in Oxygen-Free Silicon
Authors: Nauka K. , Lagowski J. , Gatos H. C. 
Published: March 2011

ABSTRACTWe found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon. The intrinsic gettering has been observed thus far only in oxygen-rich Czochralski silicon and it has been believed to be intimately related to oxygen. We present experimental characteristics of the new intrinsic gettering process, and we propose a model involving outdiffusion and precipitation of silicon interstitials rather than oxygen which is involved in the standard intrinsic gettering.
Palladium-Test: A Tool to Evaluate Gettering Efficiency
Authors: Graff K. , Hefner H.-A. , Pieper H. 
Published: March 2011

ABSTRACTA new method is presented which is suitable to check gettering processes and to evaluate gettering efficiencies. This method is based on an intentional contamination of the respective silicon wafer by means of palladium or any other haze forming metal. The palladium is diffused and haze is revealed by preferential etching. In order to determine gettering efficiency the sizes of the haze areas on gettered and non-gettered wafers are compared. The quantity of the gettered palladium can be deduced from lateral palladium profiles.In contrast to procedures published in the literature this method is very simple and fast. Therefore it is suitable for routine application to check back side damaged wafers or internal gettering.
Characterization of Denuded Zones in Silicon Wafers
Authors: Rath H. J. , Reffle J. , Huber D. , Eichinger P. , Iberl F. , Bernt H. 
Published: March 2011

ABSTRACTDifferent techniques are presented for the characterization of the two-layered system consisting of a precipitate-free zone and a precipitated zone, generated in CZ-grown silicon wafers by thermal processing. The diffusion length profile can be determined by surface photovoltage characteristics; measurements of the collection efficiency for excess carriers generated by alpha particles gives relevant information about the soft error performance. Finally, oxygen depth profiling by SIMS is discussed. Results are shown and compared with damage patterns obtained from cleavage face etching.
Effects of Processing on Structural Defects in Silicon
Authors: Cheng L. J. 
Published: March 2011

ABSTRACTIt is found that the recombination activities of dislocation complexes and structural defects decorating twin boundaries in as-grown, p-type cast polycrystalline silicon have no observable temperature dependence in the range of 100–300 K, but the activities of these defects in phosphorusdiffused samples decrease with the increase of temperature in the same range. The results suggest that the phosphorus diffusion can cause a significant shift of energy levels of these defects toward the valence band from the middle of the band gap.
Gettering of Metallic Impurities in Silicon
Authors: Ourmazd A. , Schröter W. 
Published: March 2011

ABSTRACTWe report the results of a study of the microstructural changes brought about by the gettering of metallic impurities in silicon. Phosphorus gettering proceeds by the formation of metal disilicides at the silicon/phosphosilicate glass interface. By showing that iron is strongly localized at the interface by phosphorus gettering, we present the first evidence that phosphorus gettering can proceed independently of Fermi level effects. Our first results on the intrinsic gettering of nickel lend support to the notion that the emission of silicon interstitials brought about by phosphorus diffusion (and SiP formation), or intrinsic gettering (SiOx, formation), plays an important role in the gettering process.
Gettering of Impurities during High Dose Implantation of Al or Cr into Si and the Resulting Effect on Structure and Composition
Authors: Namavar F. , Budnick J. I. , Otter F. A. 
Published: March 2011

ABSTRACTThis paper presents strong evidence for carbon and oxygen gettering during high dose implantation of Cr and Al into Si by implanted ions or Si atoms. Rutherford Backscattering (RBS) and Auger Electron Spectroscopy (AES) experiments of Cr and Al implanted Si samples in a diffusion pumped vacuum (DPV) system (≃ 10−6 Torr) clearly indicate that the incorporation of carbon or oxygen occurs preferentially and depends on the surface composition which is controlled by the dose of implantation and by sputteripg.The implantation of Cr and Al in a DPV system (≃ 10−6 Torr) results in a large increase in the concentration and retention of implanted atoms compared to implantation in a UHV system (≃ 10−8 Torr). For implantation in a DPV system, the Cr distribution broadens up to a factor of two. For Al a bimodal or broadened distribution could be observed by nuclear resonance profiling (NRP).