bluuebunny/crossref_metadata_2025_split huggingface dataset:
Human growth hormone (GH) immunoassay: standardization and clinical implications
Authors: Carrozza Cinzia , Lapolla Rosa , Canu Giulia , Annunziata Francesca , Torti Eleonora , Baroni Silvia , Zuppi Cecilia 
Published: March 2011

Abstract

Background: The poor comparability of growth hormone (GH) results obtained using commercially available methods, is partly due to standard preparations used in calibration. The system relies on the use of the International Reference Preparation (IRP) international standard (IS) 80/505, of human pituitary origin, containing all GH isoforms. Recently, a 22K recombinant GH isoform IRP IS 98/574 was commercialized. Our aim was to evaluate the influence of both calibrators on GH results.

Methods: GH concentration in 97 serum samples from children undergoing a growth hormone releasing hormone+arginine stimulation test was measured using Siemens IMMULITE electro-chemiluminescence method, calibrated with both IS 80/505 and IS 98/574 (GRH Growth hormone-Recombinant 98/574-kit).

Results: Comparison of our results obtained with the two sets of calibrators showed good correlation, although we found higher percentage variation (var%) than that stated by Siemens. The mean var% value was confirmed when all results were sub-divided into subgroups based on both high and low GH concentrations.

Conclusions: Since the GH assay is influenced by a variety of binding proteins, isoforms and conversion factors, standardization of the assay is strongly required. In Italy, the Agenzia Italiana del Farmaco 39 note provides GH laboratory values which are useful for therapy. On the basis of our results, we therefore propose to adjourn these GH values in order to ensure better management of patients with GH-related disorders.
Ivor Noël Hume: Historical Archaeologist
Authors: Hume Ivor Noël , Miller Henry M. 
Published: March 2011

Abstract
Ivor Noël Hume is one of the founders of historical archaeology in North America and has long championed the integration of documentary and archaeological evidence for understanding the past. As the chief archaeologist at Colonial Williamsburg for three decades, he directed numerous excavations and literally wrote the book on colonial artifacts. Committed to sharing research findings with the public, he led the way through varied publications and films and developed the first major exhibits about colonial archaeology in the United States. His most well-known project is the exploration and exhibition of the early seventeenth-century Virginia settlement of Martin's Hundred.
An Optimal Weighted Aggregated Association Test for Identification of Rare Variants Involved in Common Diseases
Authors: Sul Jae Hoon , Han Buhm , He Dan , Eskin Eleazar 
Published: March 2011

AbstractThe advent of next generation sequencing technologies allows one to discover nearly all rare variants in a genomic region of interest. This technological development increases the need for an effective statistical method for testing the aggregated effect of rare variants in a gene on disease susceptibility. The idea behind this approach is that if a certain gene is involved in a disease, many rare variants within the gene will disrupt the function of the gene and are associated with the disease. In this article, we present the rare variant weighted aggregate statistic (RWAS), a method that groups rare variants and computes a weighted sum of differences between case and control mutation counts. We show that our method outperforms the groupwise association test of Madsen and Browning in the disease-risk model that assumes that each variant makes an equally small contribution to disease risk. In addition, we can incorporate prior information into our method of which variants are likely causal. By using simulated data and real mutation screening data of the susceptibility gene for ataxia telangiectasia, we demonstrate that prior information has a substantial influence on the statistical power of association studies. Our method is publicly available at http://genetics.cs.ucla.edu/rarevariants.
Focusing Transgene Expression in Drosophila by Coupling Gal4 With a Novel Split-LexA Expression System
Authors: Ting Chun-Yuan , Gu Stephanie , Guttikonda Sudha , Lin Tzu-Yang , White Benjamin H , Lee Chi-Hon 
Published: March 2011

Abstract
Here we report the development of a ternary version of the LexA::VP16/LexAop system in which the DNA-binding and trans-activating moieties are independently targeted using distinct promoters to achieve highly restricted, intersectional expression patterns. This Split LexA system can be concatenated with the Gal4/upstream activating sequence system to refine the expression patterns of existing Gal4 lines with minimal genetic manipulations.
Prion-Forming Ability of Ure2 of Yeasts Is Not Evolutionarily Conserved
Authors: Edskes Herman K , Engel Abbi , McCann Lindsay M , Brachmann Andreas , Tsai Huei-Fung , Wickner Reed B 
Published: March 2011

Abstract[URE3] is a prion (infectious protein) of the Saccharomyces cerevisiae Ure2p, a regulator of nitrogen catabolism. We show that wild S. paradoxus can be infected with a [URE3] prion, supporting the use of S. cerevisiae as a prion test bed. We find that the Ure2p of Candida albicans and C. glabrata also regulate nitrogen catabolism. Conservation of amino acid sequence within the prion domain of Ure2p has been proposed as evidence that the [URE3] prion helps its host. We show that the C. albicans Ure2p, which does not conserve this sequence, can nonetheless form a [URE3] prion in S. cerevisiae, but the C. glabrata Ure2p, which does have the conserved sequence, cannot form [URE3] as judged by its performance in S. cerevisiae. These results suggest that the sequence is not conserved to preserve prion forming ability.
Time-Resolved Raman Scattering and Transmission Measurements During Pulsed Laser Annealing
Authors: Compaan A. , LO H. W. , Aydinli A. , Lee M. C. 
Published: March 2011

ABSTRACTRaman Scattering from a 7 nsec pulsed dye laser has been used to determine the onset of recrystallization following an 8 nsec dye laser excitation pulse in ion-implanted silicon. We find essentially complete recrystallization 59 nsec after the first excitation pulse and from Stokes-anti-Stokes ratios we find at 59 nsec a crystalline lattice temperature of 600 ± 200° C. Time-resolved transmission measurements at λ = 1.15 µm also demonstrate that no molten phase has occurred even though the usual reflectivity enhancement is observed.
Dislocation Nucleation, Growth and Suppression During Cw Laser Annealing of Silicon
Authors: Rozgonyi G.A. , Baumgart H. , Phillipp F. 
Published: March 2011

ABSTRACTOptical, X-ray and transmission electron microscopy plus preferential chemical etching have been used to examine the dislocations and lattice strain introduced during cw laser annealing of silicon. In addition to a substrate scanning mode we operate our cw Ar-ion laser in a “pulse” mode by using an electronically activated shutter located within the laser cavity. This permits accurate measurements to be made on isolated spots or large area scans with a dislocation density that can be deliberately varied. In particular we discuss surface slip traces, their component dislocations and resulting lattice strains, as well as submicron extrinsic dislocation loops which result from the condensation of ion-implantation produced interstitial silicon. Recommendations are presented for producing defect and strain-free material, as well as samples with specific densities of dislocations.
Laser Annealing of Defects in Vpe and Cz Grown Gallium Arsenide with a Pulsed Nd:Yag Laser
Authors: Mooney P. M. , Bourgoin J. C. , Icole J. 
Published: March 2011

ABSTRACTGallium arsenide crystals, both VPE and Cz grown, were annealed with a pulsed Nd:YAG laser. Gold Schottky diodes were fabricated and defects were studied using the DLTS technique. The native defect E(0.83eV) was found to anneal while other electron traps, E(0.39eV) in both materials and E(0.30eV)in Cz material, remained after irradiation. A new trap, E(0.70eV), was observed after laser irradiation in both materials.Cz GaAs samples implanted with both Ga and As were also laser annealed. The E(0.83eV) level was not observed after implantation. The E(0.30eV) trap and new levels, E(0.44eV) and E(0.6leV) were observed. C-V measurements and defect profiles indicate that the recrystallized layer is far from defect free.
Beam Annealing of Ion-Implanted Gaas and Inp
Authors: Fan J. C. C. , Chapman R. L. , Donnelly J. P. , Turner G. W. , Bozler C. O. 
Published: March 2011

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.
CW Laser Annealing of Low Dose Implants in GaAs
Authors: Nissim Yves I. , Gibbons James F. 
Published: March 2011

ABSTRACTThe possibility of annealing low dose implants (≃ 1013cm-2) in GaAs using a cw scanning laser has been investigated. We have observed that above the threshold of laser-induced damage, a gallium oxide (3-Ga2O3) can be grown at laser scan speeds of 0.5mm/sec. The heat transferred to the substrate during the growth of the oxide is utilized to anneal low dose Si implanted layers. As suggested by sheet electrical measurements, close to complete activation of the implanted species is obtained.
Liquid Phase Recrystallization of InSb by CW Laser Irradiation
Authors: Lee D.H. , Olson G.L. , Hess L.D. 
Published: March 2011

ABSTRACTIndium antimonide can be recrystallized epitaxially in the liquid phase by a scanning cw argon ion laser beam for improvements in crystal quality, surface morphology and oxide interface properties. Selected area diffraction measurements, Auger sputter depth profiling and dispersive x-ray analysis indicate that crystallization occurs epitaxially, and stoichiometry is preserved in the laser processed regions. Complete elimination of all asperities present in the original polished surface was observed subsequent to laser irradiation. Scanning electron microscopy and mechanical stylus measurements of the lateral profile of the laser irradiated region revealed the presence of a slight surface contour (convex meniscus) with a maximum change in height of 700 Å across a 64 μm recrystallized strip. In contrast to previous work with other compound semiconductors (e.g., GaAs), these results with InSb indicate that cw laser-induced melting and subsequent liquid phase epitaxial recrystallization can be used to provide improved materials properties of particular compound semiconductors.
Laser-Annealed Gap Ohmic Contacts for High-Temperature Devices
Authors: Eknoyan O. , Van Der Hoeven W. , Richardson T. , Porter W.A. 
Published: March 2011

ABSTRACTThe results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. In addition aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones.
Laser Processing of Silicon for Advanced Microelectronic Devices and Circuits
Authors: Hess L.D. , Kokorowski S.A. , Olson G.L. , Yaron G. 
Published: March 2011

ABSTRACTSome of the basic requirements currently envisioned for advanced microelectronic devices and circuits are outlined and discussed in terms of fabrication techniques. Phenomenological aspects of laser processing of semiconductor materials are presented and related to the potential application of this technology for overcoming some of the fundamental limitations of conventional fabrication methods. Laser processing results obtained from a variety of siliconbased materials and test structures are presented and used to illustrate the unique features of the laser technique and the novel approach it brings to semiconductor device and circuit fabrication.
Pulsed Electron Beam Processing of Silicon Devices
Authors: Greenwald A. C. , Dolan R. P. , Tobin S. P. 
Published: March 2011

ABSTRACTPulsed electron beams [1] were used to anneal ion-implanted diodes, transistors, and resistors. Devices were fabricated by patterning a thermal oxide on a silicon wafer, ion-implanting and pulse processing with the oxide in place, and then applying contacts. Oxide films over 0.3 micron thick were not damaged, and the silicon below these films was not melted by the pulsed electron beam. Low-dose (101311B+/cm2), implanted, pulse-annealed resistors showed no change in sheet resistance for oxide windows 2.5 to 50.0 microns wide. Diodes were fashioned with good forward and reverse I-V characteristics, with m=1.09 and IO=2.7×10−10 A/cm2 for I=IO exp(qV.mkT)−1 , when a low-temperature (550˚C, 1 hr), postpulse anneal was included in the process sequence. Both bipolar and FET types of transistors were fabricated. Results compare favorably with thermal annealing cycles.
Characterization of Al-Si Ohmic Contacts Obtained on Shallow Junctions by Laser and Electron Beam Annealing
Authors: Armigliato A. , De Luca P. , Finetti M. , Solmi S. 
Published: March 2011

ABSTRACTIn this work the capability of pulsed ruby laser and multiscan electron beam techniques in the formation of Al-Si ohmic contacts on shallow (0.3 μm) junctions has been investigated. To measure the contact resistivity, properly designed test patterns have been employed, whereas to evaluate the junction leakage induced by the Al-Si interaction during sintering, the diode reverse current has been tested.Laser beam annealing gives rise to scattered values of contact resistivity, ranging from 10-4 to 5 × 10-3 ohm-cm2 without any clear dependence on the energy used. The corresponding diode reverse currents were higher than those of the unannealed specimens by about three orders of magnitude.E-beam annealing achieves contact resistivities on the order of 10-5 ohm-cm2 typical of conventional thermal treatment, with a parallel increase in the reverse current by only one order of magnitude.These results indicate electron-beam annealing as a promising technique in the realization of Al-Si ohmic contacts for VLSI technology.
Scanning E-Beam Annealing of Mos Devices
Authors: Speight J.D. , Glaccum A.E. , Machin D. , Mcmahon R.A. , Ahmed H. 
Published: March 2011

ABSTRACTConditions for the scanning e-beam activation of P and As implanted source and drain junctions in production NMOS Si gate devices have been established. MOS devices with e-beam annealed, As-implanted, source and drain regions have been produced. The transistor parameters are found to be close to those of furnace annealed control devices, but e-beam annealed devices exbibit a smaller short-channel effect.
Phase Transitions in Amorphous SI Produced by Pulsed Laser or Electron Irradiation
Authors: Baeri P. , Foti G. , Poate J. M. , Cullis A. G. 
Published: March 2011

ABSTRACTAmorphous, implanted, Si layers have been melted by pulsed electron irradiation. Implanted As has been used as a marker for determining melt duration. Systematic differences between As diffusion in initially amorphous or crystalline Si are interpreted in terms of different enthalpies of melting between amorphous (1220 J/g) and crystalline (1790 J/g) Si. The amorphous Si layers melt and crystallize at significantly lower electron energies than those required to melt crystalline Si, indicating that amorphous Si melts at 1170K compared to 1685 K for crystalline Si. We have used these thermodynamic parameters to successfully predict some of the phenomena associated with the laser induced melting and crystallization of amorphous Si.
Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing
Authors: Chiang S.W. , Liu Y.S. , Reihl R.F. 
Published: March 2011

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.
Generation of Electron Beams for Materials Processing
Authors: Fabian Pease R. 
Published: March 2011

ABSTRACTElectron beams can be used for processing materials both through thermal effects and through nonthermal, or chemical, effects. Although most interest for the last 10 years or more has been on nonthermal effects, there has recently been revived interest in electron beam heating. Such beams can be pulsed flood beams of large area (8 cm diameter), large current density (500 A cm−2) and electron energies of 5–30 keV. At the other extreme are focused cw beams of a few μm diameter and currents of about 50 μA which can be used for selective heating. There are also systems which generate ribbon beams which are effective for well controlled annealing of large areas.
Laser Annealing of the Double-Hetero Si(lll)/CoSi2/Si Structure
Authors: Ishiwara Hiroshi , Saitoh Shuichi , Mitsui Kuniaki , Furukawa Seijiro 
Published: March 2011

ABSTRACTTheoretical and experimental studies on the laser annealing of a Si/CoSi2/Si structure are presented. The power absorption in each layer in this structure is theoretically considered using the refractive index and extinction coefficient in CoSi2 and Si, which have been measured by the ellipsometric analysis. Next, an amorphous Si film deposited onto a Si(lll)/CoSi2 structure is annealed by a Q-switched ruby laser. It has been shown from Rutherford backscattering and channeling measurements that the Si film grows epitaxially onto the Si/CoSi2 structure and that an optimum power density to minimize the aligned yield in a Si film 100 nm thick exists around 1.5 J/cm2. Reflecticn electron diffraction and otpical ricroscope analyses are also used to check the crystalline quality and surface structures of the laser-annealed samples.
Post-Irradiation Annealing of Laser-Formed Silicide Layers
Authors: Wittmer M. , von Allmen M. 
Published: March 2011

ABSTRACTWe have investigated the post-irradiation annealing effects of laser-formed Pt, Pd, Rh and Ni-silicides. It was found from Rutherford backscattering and x-ray analysis that compositional changes occur during subsequent high temperature annealing in a vacuum furnace. Generally, a single silicide phase tends to form at the expense of the other phases present following laser irradiation. The surviving phase is not necessarily identical to the end-phase found in a binary solid-state reaction couple of the same system.
Raman Spectroscopic Evaluation of Silicides Formed with A Scanned Electron Beam
Authors: Nemanich R. J. , Sigmon T. W. , Johnson N. M. , Moyer M. D. , Lau S. S. 
Published: March 2011

ABSTRACTRaman scattering and Rutherford backscattering are used to study the products of SEM processing of Pd and Pt thin films on Si(100) substrates. The RBS measurements indicate the compositional depth profile of the resulting silicide while the Raman scattering indicates the crystal structure. For both cases it is found that the resultant silicide is dominated by Pd2 Si (or Pt2Si) structures but evidence of deviations are also noted.
Laser Quenched Metal-Silicon Alloys
Authors: Allmen M. Von , Affolter K. , Wittmer M. 
Published: March 2011

ABSTRACTQ-Switch laser pulses are used to convert vapor-deposited metal-Si thin films into the amorphous state by a melting, mixing and quenching process. Experimental findings obtained with the metals Au, Pt, Pd, V and Nb are presented and compared with results from a numerical simulation of the laser induced melting and quenching process.
Pulsed Laser Annealing of Aluminum
Authors: Wampler W. R. , Follstaedt D. M. , Peercy P. S. 
Published: March 2011

ABSTRACTPulsed ruby laser irradiation of unimplanted single crystal and implanted polycrystalline Al has been studied with ion beam analysis and TEM. The results show that Al is melted to a depth of ∼ 0.9 μm with a 4.2 J/cm2 , 15 nsec pulse, and that vacancies are quenched into Al during resolidification. Diffusion of Zn in liquid Al is observed, and a melt time of ∼ 65 nsec is estimated for a 3.8 J/cm2, 30 nsec pulse. The observations are in reasonable agreement with calculations of sample temperature and melt times. We observe no precipitation of AlSb in liquid Al for Sbimplanted Al, and conclude that the nucleation time satisfies 50 nsec ≲ tnuc ≲ 200 nsec. We find no evidence for amorphous Al after irradiation of single crystal Al with energies ≳ 1.5 J/cm2.
Kinetic Effects and Mechanisms Limiting Substitutional Solubility in the Formation of Supersaturated Alloys by Pulsed Laser Annealing
Authors: White C. W. , Appleton B. R. , Stritzker B. , Zeiner D. M. , Wilson S. R. 
Published: March 2011

ABSTRACTPulsed laser annealing of silicon implanted by Group (III, V) dopants leads to the formation of supersaturated alloys by nonequilibrium processes occurring in the interfacial region during liquid phase epitaxial regrowth. The distribution coefficient from the melt (k') and the maximum dopant substitutional solubility (CSmax) are far greater than equilibrium values and both are functions of growth velocity. Substitutional solubility is limited by lattice strain and by constitutional supercooling at the interface during regrowth. Values for CSmax obtained at different growth velocities are compared with predictions of thermodynamic limits for solute trapping.
Laser Pulse Melting of Metals: Epitaxy and Allotropy
Authors: Buene L. , Kaufmann E. N. , Preece C. M. , Draper C. W. 
Published: March 2011

ABSTRACTLaser pulse melted single crystals of several metals have been examined by the Rutherford backscattering/channeling technique and with optical and scanning electron microscopy. Metals belonging to the three major structure groups; fcc (Ni, Pd, Rh); bcc(Mo, Nb, W, Fe); and hcp (Be, Ti, Re) have been studied at various laser power levels and in different crystallographic orientations. Of these cases, Be, Ti and Fe show high temperature allotropes which are expected to influence the character of the resolidified surface layer.
Laser Induced Defects and Materials Interactions in the V-Si System
Authors: Appleton B. R. , Stritzker B. , White C. W. , Narayan J. , Fletcher J. , Meyer O. , Lau S. S. 
Published: March 2011

ABSTRACTPulsed laser annealing has been evaluated as a technique for fabricating superconducting V3 Si from multilayer V-Si samples, and the nature of laser-induced defects in V3 Si single crystals has been examined. Correlated analyses by ion scattering, ion channeling, Tc measurements and TEM were used to examine the composition and structure of samples subjected to single and multiple laser pulses. It was observed that although the superconducting A15 phase could be formed by pulsed laser mixing, the associated rapid quenching effects introduced defects which were not completely removed by thermal annealing to 925 K for 1 hour. Ion channeling and TEM studies of V3 Si single crystals showed that pulsed laser irradiation caused microcracks to develop in the surface, probably from mechanical stresses induced by thermal gradients.