bluuebunny/crossref_metadata_2025_split huggingface dataset:
Ion-Projection Lithography for Submicron Modification of
Materials
Authors: Stengl G. , LÖSchner H. , Maurer W. , Wolf P. 
Published: March 2011

ABSTRACTIon-Projection Lithography (IPL) is a future production technique for
submicron electronic devices, wich combines the advantages of e-beam and
X-ray lithography without having their disadvantages. Like electrons, ions
can be accelerated, focused and deflected, and as is the case with X-rays,
scattering in resist layers is less pronounced as for e-beams. Experimental
results of IPL obtained with an Ion-Projection-Lithography-Machine IPLM-01
are presented: Ion images of self supporting masks ten times demagnified
with a geometrical resolution < 0.25 μm printed into organic and
inorganic resist layers in high volume production oriented times.
Subboundary Spacing and Appearance in Laser Zone-Melting
Recrystallization of Silicon Onamorphous Substrate
Authors: Joly J.P. , Hode J.M. , Castagna J.C. 
Published: March 2011

ABSTRACTRecrystallized silicon films on amorphous substrates are mainly
characterized by subgrain boundaries separated by a few microns. Using
seedina from the silicon substrate (lateral epitaxy), subboundary free areas
adjacent to the seed are achieved in the direction of the beam scanninq. We
have demonstrated the large influence of the growth direction and of the
thickness of the silicon layer together on the incubation distance and on
the spacing of the subboundaries. Surprisingly, a variation of the arowth
(scan) velocity of two orders of magnitude (from 1 to 70 cm/s) has no
noticeable influence on these narameters. A I × 10 elliptical Ar+
laser beam has been used in these experiments. An interpretation of these
results in terms of lateral (step) growth and stress will be given.
SOI Technologies: Device Applications and Future
Prospects
Authors: Tsaur B-Y. 
Published: March 2011

ABSTRACTSilicon-on-insulator (SOI) technologies have four major applications:
very-large-scale integrated circuits (ICs), high-voltage ICs, large-area
ICs, and vertical ICs. This paper will review the recent progress made in
these areas and discuss the prospects of various SOI technologies for
achieving commercialization.
Electron-Phonon and Phonon-Phonon Interactions Under Laser
Annealing Conditions
Authors: Compaan Alvin 
Published: March 2011

ABSTRACTSince the first time-resolved Raman studies of pulsed laser annealing (PLA)
effects in Si, a number of cw Raman studies have been performed which
provide a much improved basis for understanding the consequences on Raman
spectra of temperature-dependent resonance effects, high carrier density
effects, phonon anharmonicity, and strain effects. Here we briefly review
these effects and then analyze the latest pulsed Raman studies of PLA
including Stokes/anti-Stokes ratios, the shift and shape of the first order
line, and time-resolved second-order spectra. The Raman data indicate the
existence of a Raman-silent phase followed by a rapidly cooling solid which
begins within 300 K of the normal melting temperature of Si. The Raman data
also give evidence of carrier densities in the recrystallizing solid of
~1−2×l019/cm3 .
Photodetector Arrays in Laser-Recrystallized Silicon Integrated
with an Optical Waveguide
Authors: Wu R.W. , Timlin H.A. , Jackson H.E. , Boyd J.T. 
Published: March 2011

ABSTRACTIntegrated detection of light propagating in an optical waveguide by a
photodetector array fabricated directly on the waveguide surface is
demonstrated. Laser recrystallization of LPCVD polysilicon patterned with
periodically-spaced anti-reflection stripes is utilized. Lateral p-i-n
photodiode elements formed by ion implantation are characterized by reverse
leakage currents of < 10−11 amp and a typical breakdown
voltage of 50 volts. Optical response is found to be linear over a dynamic
range of greater than 55 dB.
Adhesion Effects on the Recrystallization of Silicon
Films
Authors: Bleil C. E. , Troxell J. R. 
Published: March 2011

ABSTRACTLaser processing of thin films of amorphous or polycrystalline silicon on
insulator substrates, such as the glass normally used for liquid crystal
displays, frequently leads to film thickness variations which are
unacceptable for device fabrication. Some thickness variations are caused by
the high surface tension of molten silicon and the poor adhesion of the
silicon to the substrate. Techniques to reduce this problem by increasing
the adhesion of the film to silicon dioxide coated Corning 7059 glass
substrates have been investigated. Two different approaches were used.
First, silicon ions were implanted into the silicon-glass interface to
increase the direct bonding of the silicon to the silicon dioxide. Second,
layers of material known to exhibit better adhesion to both silicon and
silicon dioxide were introduced between the silicon film and the glass
substrate. Both techniques produced films which, after subsequent laser
processing, showed significantly reduced thickness variations. These
procedures make it possible to laser process thin films of silicon on
Corning 7059 glass substrates under conditions which produce large grain
polysilicon films without producing unacceptably large thickness variations
or film cracking.
Solid Phase Epitaxy of UHV-Deposited Amorphous Si Over Recessed
SiO2 Layer
Authors: Tabe M. , Kunii Y. 
Published: March 2011

ABSTRACTLateral solid phase epitaxy (L-SPE) of ultra-high-vacuum (UHV) deposited
amorphous Si (a-Si) over patterned SiO2 has been studied to produce
monocrystalline silicon-on-insulator (SOI) films. When employing
UHV-deposited a-Si, it is essential for L-SPE to reduce step height at the
pattern boundary. This is because low density a-Si including columnar voids
is formed at the step wall by the self-shadowing effect and SPE region does
not extend across the low density a-Si area. L-SPE growth distance of 7 μm
was achieved by low temperature annealing (575°C, 20 hr) on a planar
substrate with recessed SiO2 patterns. Another deposition
technique of a-Si for SPE, i.e., chemical vapor deposition is reviewed for
comparison.
Time-Resolved, Laser-Induced Phase Transformation in
Aluminum
Authors: Williamson S. , Mourou G. , Li J.C.M. 
Published: March 2011

ABSTRACTThe technique of picosecond electron diffraction is used to time resolve the
laser-induced melting of thin aluminum films. It is observed that under
rapid heating conditions, the long range order of the lattice subsists for
lattice temperatures well above the equilibrium point, indicative of
superheating. This superheating can be verified by directly measuring the
lattice temperature. The collapse time of the long range order is measured
and found to vary from 20 ps to several nanoseconds according to the degree
of superheating. Two interpretations of the delayed melting are offered,
based on the conventional nucleation and point defect theories. While the
nucleation theory provides an initial nucleus size and concentration for
melting to occur, the point defect theory offers a possible explanation for
how the nuclei are originally formed.
Effect of Pressure on Self Diffusion in Crystalline Silicon
Authors: Aziz M. J. , Nygren E. , Christie W. H. , White C. W. , Turnbull D. 
Published: March 2011

ABSTRACTThe effect of pressure on self diffusion in crystalline silicon is being studied using 30Si as a tracer. Diffusion experiments have been carried out in the pressure range of 1 to 35000 atmospheres at 1000°C. The 30Si is observed to diffuse faster at high pressures, indicating a negative activation volume.
Assessment of Metallic Trace Contaminants on Silicon Wafer Surfaces
Authors: Rath H. J. , Stallhofer P. , Huber D. , Eichinger P. , Ruge I. 
Published: March 2011

ABSTRACTNeutron activation, atomic absorption, and voltammetric techniques are presented as appropriate analytical tools to monitor trace amounts of metallic impurities on large diameter silicon wafers. Detection limits and results are compared for standard wafers implanted with Fe, Cu, and Ni. DLTS measurements are included for implanted and as-grown doped wafers.
The Influence of Dislocations on the Diffusion Behavior of Gold in Silicon
Authors: Stolwijk N. A. , Hölzl J. 
Published: March 2011

ABSTRACTDiffusion of gold in silicon has been studied by means of the spreading-resistance technique on dislocation-free, moderately dislocated and highly dislocated Si crystals. The penetration profiles not only show the general tendency that Au diffusion increases as a function of dislocation density, but also reveal qualitative differences between these three classes of specimens. It is demonstrated how within the framework of the kick-out model from the experimental data detailed information on both Au diffusion and Si self-diffusion can be obtained. In turn, the observed influence of dislocations on the diffusion of Au in Si represents a convincing confirmation of the kick-out mechanism.
Internal Gettering in Czochralski Silicon
Authors: Craven Robert A. 
Published: March 2011

ABSTRACTA review of the use of oxygen precipitation for the purposes of internal gettering in silicon is given. The review considers current ideas about oxygen precipitation mechanisms and the relationships between different precipitate morphologies. Two different paths for oxygen precipitation are considered, the first path being 450C thermal donor - coesite defects and the second being <100> oriented platelets. A summary of the uses of oxygen precipitation gettering in integrated circuit fabrication and a simple model for optimization of internal gettering follows the precipitation discussion.
Influence of Micro-Defect Morphology on Intrinsic Gettering Effectiveness and Durability in CMOS Epitaxial Processing
Authors: Borland John O. 
Published: March 2011

ABSTRACTThe morphology of micro-defects located in the bulk of Cz-grown silicon wafers was observed to be dependent on wafer thermal history, wafer dopant species and concentration, and wafer position in the grown silicon ingot (seed, center or tail section). Intrinsic gettering effectiveness and durability due to SiOx precipitates and/or stacking faults formed during various gettering sequences were investigated. Based on preliminary results, stacking fault micro-defects combined with SiOx micro-defects are preferred for maximum durability of the intrinsic gettering mechanism.
Low Temperature Interactions Between Gold and Iron in Silicon
Authors: Brotherton S. D. , Bradley P. , Gill A. 
Published: March 2011

ABSTRACTThe annealing kinetics of the gold-iron complex have been studied over the temperature range from room temperature to 400°C. From a consideration of the charge states of the gold and iron centres at room temperature it was concluded that the pairing was by Coulombic attraction. The binding energy of the centre was found to be 1.22 eV.During the annealing processes the interstitial iron was found to be precipitating and this was shown to modify the details of the growth and dissociation rates of the gold-iron complex.
Transition Metal Contamination of Epitaxial Silicon
Authors: Scott Martin P. , Caubin L. , Chen D. C. , Weber E. R. , Rose J. , Tucker T. 
Published: March 2011

ABSTRACTDeep level defects in p/p+ epitaxial silicon were characterized by deep level transient spectroscopy (DLTS). Two dominant deep level defects were found in all samples which have been identified with Fe and CrB pairs. A third deep level defect was found in most of the samples which has tentatively been identified with Ti. The concentrations of these traps were established in a large number of samples as a function of epitaxial growth condition and substrate oxygen level.
Physical Modeling of Backside Gettering
Authors: Bronner Gary B. , Plummer James D. 
Published: March 2011

ABSTRACTTo understand gettering action we have modeled the diffusion of metal to a backside getter. A first order model describing the diffusion of metals to an infinite backside sink is found not to fit experimental data. To fit the data for phosphorus gettering at 1000°C and argon implantation gettering at 800°C it is necessary to also hypothesize the injection of silicon interstitials. Assuming that the diffusion of the silicon interstitials is the rate limiting step in gettering, allows one to extract the diffusion coefficient and equilibrium concentration of the interstitial. The hypothesis of silicon interstitial injection agrees with recent work on phosphorus diffusion by Fahey et. al. To test this hypothesis for heavily damaged regions we have looked at the effect of an argon implanted region on the diffusion of a phosphorus buried layer. At both 800°C and 700°C, during nitrogen anneals we see significant enhancement of the phosphorus diffusion.
Extrinsic Gettering with Epitaxial Misfit Dislocations
Authors: Salih Ali S. M. , Maszara W. , Kim H. J. , Rozgonyi G. A. 
Published: March 2011

ABSTRACTNew results are presented on Ge doped Si epitaxial layers which contain interfacial misfit dislocations. Microscopic and chemical analyses showed the preferential gettering of several metallic species (Au, Cu, Ni, and Fe) at the misfit dislocations with semiquantitative correlation between dislocation density and the captured impurity concentration. Wafer curvature was measured and shown to be less than that for typical Si3N4and SiO2layers used in IC fabrication. The reduction of Schottky diode leakage current has been clearly demonstrated and attributed to gettering of residual impurities, as well as signifying that, the active surface device region is not deleteriously affected by spurious defect reactions at the buried epitaxial interface.
Stress-Assisted Diffusion of Boron and Arsenic in Silicon
Authors: Manda Michael L. , Shepard M. L. , Fair R. B. , Massoud H. Z. 
Published: March 2011

ABSTRACTThe diffusion of B and As in mechanically strnsed silicon has been investigated for initial implant doses of 1013, 1014, and 1015 cm-2, over a range of annealing temperatures. At stresses near the silicon yield point, no significant enhancement or retardation was observed. This was true even in plastically deformed samples with dislocation densities >1×107 cm-2. The results are consistent with the multiple charge state vacancy model of impurity diffusion in silicon. The B diffusivity appears to agree with the accepted activation energy of 3.59 eV and pre-exponential of 3.17 cm2/sec for intrinsic B diffusion.
Enhanced Carbon Diffusion in Silicon During 900°0 Annealing
Authors: Ladd L. A. , Kalejs J. P. , Gösele U. 
Published: March 2011

ABSTRACTEnhanced diffusion of carbon Is observed to be produced during anneal ing of silicon at 900°C under conditions of surface oxidation and phosphorus in-diffusion. Silicon containing high concentrations of carbon (∼9 × 1017/cm3 substitutional) and varying levels of interstitial oxygen and differing defect concentrations has been studied. Diffusion coefficient enhancement over the value found for an anneal in an inert ambient is by a factor of three during oxidation and a factor of forty with phosphorus in-diffusion. Carbon accumulation takes place in a region 0.3–0.5 microns from the sample surface only under conditions of phosphorus in-diffusion and is attributed to carbon precipitation. A model that assumes Interactions between silicon self-interstitials and the carbon can explain both the enhanced diffusion and the carbon accumulation.
Diffusion of Boron from Polysilicon at High Concentrations
Authors: Lever R. F. , Garben B. , Hsieh C. M. , Arienzo W. A. Orr 
Published: March 2011

ABSTRACTBoron diffusion profiles in single crystal silicon from highly doped polysilicon sources have been measured using SIMS after diffusion at 950°C for various times. These data have been analyzed to determine D(c) of boron in the single crystal. It is ncrmally assumed that at high boron concentrations D increases linearly with concentration. However, the shape of these profiles indicates that for a polysilicon source, this behavior does not appear to hold. Using Bolzmann-Matano analysis, D(c) was found to be insensitive to boron concentrations above 3.0E19 atoms/cm3. The results of this analysis were confirmed by using them as input to a diffusion simulation computer program and excellent agreement with the experimental profiles was obtained. The value of D was found to be unusually high at all concentrations in the single crystal and increased almost linearly with the doping level of the polysilicon. The effect of the furnace ramp-down cycle on the profiles near the crystal surface have also been investigated.
Molecular Beam Epitaxy of GexSi1-x/(Si, Ge) Strained-Layer Heterostructures and Superlattices
Authors: Bean J. C. 
Published: March 2011

AbstractThis paper reviews recent work on GexSi1-x/Si(100) strained-layer epitaxy and reports new findings on GexSi1-x/Si(111) and GexSil1-x/Ge(100) growth as well as results on modulation doping. Layer synthesis and evaluation techniques are described along with tabulations of strain and critical layer thickness data. Evaluation techniques include Low Energy Electron Diffraction, Rutherford backscattering, X-ray diffraction, Raman scattering and cross-sectional Transmission Electron Microscopy. Synthesized structures range from simple heterojunctions to 100 period superlattices.
The Epitaxial Growth of Metastable Phases
Authors: Farrow Robin F. C. 
Published: March 2011

AbstractPseudomorphism, the epitaxial growth of metastable phases, is reviewed. Emphasis is given to recent developments in the qrowth and investigation of α-Sn films on InSb and CdTe since this is a case where there is a very large strain energy barrier to the metastable to stable phase transformation. As a result, pseudomorphic growth of α-Sn can be sustained to film thicknesses of ∼1 μm.Progress towards stabilization of direct gap group IV semiconductors is discussed and possible applications of pseudomorphism considered.
Stability and Growth of Lennard-Jones Strained Layer Superlattice Interfaces
Authors: Dodson Brian W. 
Published: March 2011

AbstractIn the context of a model system whose atoms interact via Lennard-Jones (LJ) interatomic potentials, we have studied the stability of an initially perfect strained layer superlattice interface (SLS) and the process of growth of a mismatched layer on a substrate using Monte Carlo techniques. An initially perfect SLS interface is found to be metastable up to 12% mismatch, a much higher value than is found on real SLS systems. In contrast, we find that, within the limitations of the calculations, a perfect SLS interface cannot be grown in an LJ system. The implications of these results for understanding SLS growth processes is discussed.
Misfit Dislocations in Epitaxial Layers of SI on Gap (001) Substrates
Authors: Viegers M. P. A. , Lieuwma C. W. T. Bulle , Zalm P. C. , Maree P. M. J. 
Published: March 2011

AbstractMisfit dislocations in epitaxial layers of Si grown by MBE at 570°C on GaP(001) substrates have been studied by TEM. It is found that layers as thick as 500 Å at least reside coherently on the substrate without misfit dislocations. In 1000 Å layers of Si the misfit strain is accommodated in part by 60-degree type dislocations with their Burgers vector inclined with respect to the interface, and by stacking faults intersecting the Si layer. The dislocations are dissociated into 30- and 90-degree Shockley partial dislocations. It is shown that in the case of a biaxial strain field, which is tensile in a (001)-plane, the 90-degree partial must be nucleated first. Only then can the 30-degree partial follow on the same glide plane. This geometrical effect explains the presence of dislocations as well as stacking faults in the Si layer.
The Role of Lattice Mismatch in Growth of Epitaxial Cubic Silicides on Silicon
Authors: Hamm R. A. , Vandenberg J. M. , Gibson J. M. , Tung R. T. 
Published: March 2011

AbstractThe lattice mismatch of single-crystal epitaxial nickel disilicide of orientation A and B on Si(111) has been measured in and out of the <111> growth direction using a four-circle X-ray diffractometer. In both directions the mismatch of the as-grown B-type film was found to be larger than for the A-type; after annealing at 800°C the mismatch of the A-type approached the value of the B-type, while the latter remained the same. This result suggests that the B-type NiSi2 film has relaxed more during growth than the A-type which can only be relieved by subsequent annealing. This difference in A- and B-type mismatch is correlated with TEM studies. The combined results provide evidence that the growth of either A or B orientation is strongly affected by the nature and density of the misfit dislocations.
In Situ Investigation of the Palladium Silicon Reaction
Authors: Smith D. A. , Psaras P. A. , Fishert I. J. , Tu K. N. 
Published: March 2011

AbstractPalladium has been deposited on {1001 and t1111 oriented silicon wafers and also on polysilicon. Cross-sectional specimens for transmission electron microscopy were prepared and heated in-situ. The interfaces between silicide and silicon were rough and the volume changes accompanying heating and compound formation caused elastic strains in the substrates and in one case hillock formation in the products.
Hgl-xCdxTe-Cr Interface Reaction
Authors: Philip P. , Wall A. , Franciosi A. , Peterman D. J. 
Published: March 2011

AbstractWe summarize photoemission studies using Synchrotron Radiation of the formation of the HgCdTe-Cr interface at room temperature on in situcleaved single crystal substrates. Evidence is found of a Cr-Hg exchange reaction in the subsurface region. The surface and near surface layers appear completely depleted of mercury.
Epitaxy of Nb3 Sn Films on Sapphire
Authors: Marshall A. F. , Hellman F. , Oh B. 
Published: March 2011

AbstractFilms of Nb3Sn vapor deposited at low rates and high temperatures on (1102) sapphire form an epitaxial <100> single crystal matrix with a domain structure of misoriented regions bounded by low-angle dislocation boundaries. Nucleation of other orientations at the interface result in a highly oriented but polycrystalline film through approximately the first thousand Angstroms of film thickness. After this point random orientations become overgrown by epitaxial <100> regions. At slightly lower temperatures many small <100> grains with a second epitaxial relationship also nucleate at the interface. These rotated grains persist through greater thicknesses than random orientations. The misorientation defect structure of the single crystal matrix is analyzed by transmission electron microscopy.
Effect of Long Range Interaction on Diffusion in Cu/NiFe TernaryAlloy Composition Modulated Thin Films
Authors: Chaudhuri Jharna , Tsakalakos Thomas 
Published: March 2011

AbstractComposition modulated (with wavelengths between 1.6 to 4.98 nm) Cu/NiFe ternary alloy thin films containing 53 at % Cu, 40 at % Ni, and 7 at % Fe were prdduced by the vapor-phase growth technique. The inter-diffusivities in these films were measured at temperatures 320°C, 345°C, and 400°C from the growth or decay rate of satelite peak intensities. as a function of dispersion relation B2 exhibited anomalous behavior at certain wavelengths at which an enhanced elastic modulus effect is also observed. This anomalous behavior was directly attributed to the long range interaction.
Redistribution and Influence of Arsenic in Chromium Silicide Formation
Authors: Zheng L. R. , Hung L. S. , Mayer J. W. 
Published: March 2011

AbstractThe redistribution of arsenic during CrSi2 formation and its influence on the growth rate of the silicide have been investigated with Rutherford backscattering and ion channeling spectroscopy and electron microscopy. Arsenic was introduced by implantation in the metal films or in the silicon substrates. When arsenic was initially in chromium, it was incorporated in CrSi2 during silicide formation and significantly reduced the reaction rate; when arsenic was initially in silicon, it accumulated at the silicon/silicide interface with a less pronounced retarding effect than that if arsenic was present in chromium. The redistribution of dopant atoms is attributed to the fact that silicon is the dominant moving species in CrSi2 formation. The influence of dopant atoms is related to their chemical and physical state.