bluuebunny/crossref_metadata_2025_split huggingface dataset:
Analysis of Compositionally and Structurally Graded Si:H and Si1−xGex:H Thin Films by Real Time Spectroscopic Ellipsometry
Authors: Podraza Nikolas , Li Jing , Wronski Christopher R. , Horn Mark W. , Dickey Elizabeth C. , Collins Robert W. 
Published: April 2011

ABSTRACTSilicon-germanium (Si1−xGex:H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH4 and GeH4 and measured during growth using real time spectroscopic ellipsometry. A two-layer virtual interface analysis has been applied to study the structural evolution of Si:H films prepared in multistep processes utilizing alternating intermediate and low H2-dilution material layers, which have been designed to produce predominately amorphous films with a controlled distribution of microcrystalline particles. The compositional evolution of alloy-graded a-Si1−xGex:H has been studied as well using similar methods. In each case, depth profiles of microcrystalline content, fμc, or Ge content, x, have been extracted. Additionally, real time spectroscopic ellipsometry has been used to monitor post-deposition exposure of a-Si:H, a-Si1−xGex:H, and a-Ge:H films to a hydrogen plasma in situ in order to determine sub-surface amorphous film modification similar to that which would occur when a highly H2-diluted layer is deposited on a layer prepared with lower dilution. These analyses provide guidance for enhanced performance of Si:H based solar cells, through controlled bandgap grading using compositionally graded amorphous binary alloys (a-Si1−xGex:H) or the incorporation of controlled fractions of microcrystallites into bulk amorphous i-layer materials, and by providing a fundamental understanding of the modification of component layers during the deposition of subsequent layers in multilayer stacks.
Two-Step Capacitance Transients From an Oxygen Impurity Defect
Authors: Datta Shouvik , Cohen J. David , Xu Yueqin , Branz Howard M. 
Published: April 2011

ABSTRACTThis paper describes the study of an electron-trapping defect which underwent significant configurational relaxation in oxygen contaminated hydrogenated amorphous silicon-germanium (a-Si,Ge:H) alloys grown by hot-wire chemical vapor deposition. An unusual two-step electron emission from this relaxed defect is studied using junction-capacitance-based measurements. In this work, we monitor the recovery of the relaxed defect after filling it by photoexcited electrons and also by electrons injected with a voltage filling pulse. The dependence of the transient shape on filling pulse time is described. We have also performed experiments which clearly demonstrate that this is a bulk defect and exclude contributions from any additional blocking junctions.
Production Technology of Large-Area, Light-Weight, Flexible Solar Cell and Module
Authors: Shimosawa Makoto , Kawano Shinichi , Ishikawa Takamasa , Nakamura Tetsuro , Sakakibara Yasushi , Kiyofuji Shinji , Enomoto Hirofumi , Nishihara Hironori , Kamoshita Tomoyoshi , Miyagi Masahide , Saito Junichiro , Takano Akihiro 
Published: April 2011

ABSTRACTProduction technologies of a-Si/a-SiGe flexible film solar cells have been established. The film solar cells having a unique monolithic device structure using through-hole contacts are continuously fabricated on flexible plastic films. Production technologies, such as (1) low temperature and high speed textured electrode deposition method, (2) high speed amorphous silicon deposition method, (3) modified roll-to-roll deposition apparatus technology, (4) large-area high quality transparent electrode deposition method, and (5) very high speed laser patterning method were developed. Increasing deposition rate of textured metal electrode was developed for improving production capacity. We developed and proposed low-temperature textured electrode deposition technique named “selective reactive sputtering”. In the deposition method, Ag-based electrode is deposited using small amount of Al containing Ag alloy targets. Ar/O2 mixed gas is used for reactive sputtering. In the deposition conditions, Ag is not oxidized and maintains low resistivity, whereas Al is oxidized selectively and changes the surface morphology drastically. The oxide incorporation affects on the surface reaction and enhances surface roughness formation. We also developed an amorphous silicon deposition control method which can increase deposition rate without deteriorating film properties. We found peak-to-peak voltage at the cathode (Vpp) had information of the plasma and could be used for optimizing the deposition conditions. Vpp has a strong relationship with stabilized efficiency of solar cells. Very high laser patterning method was also developed. The laser patterning method using a galvano scanner improves the pattering speed remarkably. Our new factory in Kumamoto started commercial production in the last year. We can produce 12MW/Y of solar cells using the new production line that can apply 1m-wide and 2000m-long film substrates at this time. We are planning to install more production lines and have 40MW/Y production capacity in FY 2008.
High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk
Authors: Vygranenko Yuriy , Sazonov A. , Striakhilev D. , Chang J. H. , Heiler G. , Lai J. , Tredwell T. , Nathan A. 
Published: April 2011

ABSTRACTIn this paper, we report on low noise, high fill factor amorphous silicon (a-Si:H) image sensor structures for indirect radiography. Two types of the sensor arrays comprising n-i-p photodiodes and m-i-s photosensors have been fabricated. The device prototypes contain 100 × 100 pixels, with a pixel pitch of 139 μm. The active-matrix addressing is provided by low off-current TFTs. The sensors are vertically integrated onto the TFT-backplane, by implementing a 3-μm-thick low-k interlayer dielectric. This dielectric layer serves to reduce the data line capacitance and to planarize underlying topography. The detector was designed for reduced data-line resistance and parasitic coupling. Details of the device design and fabrication, along with sensor performance characteristics, are presented and discussed.
Theoretical Investigation of New Quantum-Cross-Structure Device as a Candidate beyond CMOS
Authors: Kondo Kenji , Kaiju Hideo , Ishibashi Akira 
Published: April 2011

ABSTRACTWe propose a new quantum cross structure (QCS) device as a candidate beyond CMOS. The QCS consists of two metal nano-ribbons having edge-to-edge configuration like crossed fins. The QCS has potential application in both switching devices and high-density memories by sandwiching a few molecules and atoms. The QCS can also have electrodes with different dimensional electron systems because we can change the widths, the lengths, and the heights of two metal nano-ribbons, respectively. Changing the dimensions of electron systems in both electrodes, we have calculated the current-voltage characteristics depending on the coupling constants between a molecule and the electrode. We find that the conductance peak is much sharper in case of weak coupling regardless of dimensions of electron systems in electrodes, compared to strong coupling case. We also find that the conductance peak of QCS having electrodes with two-dimensional electron systems (2DES) is much sharper than that of QCS having electrodes with three-dimensional electron systems (3DES) in case of strong coupling because of quantum size effect of 2DES. These results imply that the QCS with the very sharp conductance peak can serve as the devices to switch on and off by very small voltage change.
Bulk Growth of SiC
Authors: Wellmann Peter , Müller Ralf P. , Sakwe Sakwe A. , Künecke Ulrike , Hens Philip , Stockmeier Mathias , Konias Katja , Hock Rainer , Magerl Andreas , Pons Michel 
Published: April 2011

ABSTRACTThe paper reviews the basics of SiC bulk growth by the physical vapor transport (PVT) method and discuss current and possible future concepts to improve crystalline quality. In-situ process visualization using x-rays, numerical modeling and advanced doping techniques will be briefly presented which support growth process optimization. The “pure” PVT technique will be compared with related developments like the so called Modified-PVT, Continuous-Feeding-PVT, High-Temperature-CVD and Halide-CVD concepts. Special emphasis will be put on dislocation generation and annihilation and concepts to reduce dislocation density during SiC bulk crystal growth. The dislocation study is based on a statistical approach. Rather than following the evolu-tion of a single defect, statistic data which reflect a more global dislocation density evolution are interpreted. In this context a new approach will be presented which relates thermally induced strain during growth and dislocation patterning in networks.
Alternative Routes to Porous Silicon Carbide
Authors: Friedel Bettina , Greulich-Weber Siegmund 
Published: April 2011

ABSTRACTA low-cost alternative route for large-scale fabrication of high purity porous silicon car-bide is reported. This allows a three-dimensional arrangement of pores with adjustable pore di-ameters from several 10 nanometers to several microns. The growth of SiC is here based on a combined sol-gel and carbothermal reduction process. Therein tetraethoxysilane is used as the primary silicon and sucrose as the carbon source. We provide two different sol-gel based ways for preparation of porous SiC, obtaining either a regular porous or a random porous type. Regu-lar porous SiC with monodisperse ordered spherical pores of predefined size is obtained via liq-uid infiltration of a removable opal matrix. Whereas random porous material with polydisperse pores of an adjustable size distribution range, but without order, can be achieved via free gas phase growth. This is performed by degradation of granulated sol-gel prepared material inside a sealed reaction chamber, resulting in a SiO/CO/SiC rich gas atmosphere, which causes SiC growth inside the granulate itself. For both types doping of the initially semi-insulating porous SiC is possible either during the sol-gel preparation or via the gas phase during the following annealing procedure. As probing dopants we have used P, N, B and Al, which are well known from 'conventional' SiC. Composition and structure of the obtained material was investigated using scanning electron microscopy, X-ray diffraction, nuclear magnetic resonance and Fourier transform infrared spectroscopy.
Influence of Crystal Growth Conditions on Nitrogen Incorporation During PVT Growth of SiC
Authors: Hansen Darren , Loboda Mark 
Published: April 2011

ABSTRACTThe control and understanding of the incorporation of nitrogen during SiC PVT continues to play an important role in SiC crystal growth. Nitrogen acts both as a dopant and an impurity depending on the growth conditions and desired resistivity. Epitaxial growth by CVD provides some insight into N incorporation in terms of the face effects, temperature, and impact of the chemical species in terms of the C/Si ratio. This paper will present experimental results showing trends regarding nitrogen incorporation during SiC PVT. Various crystal growth processes operated under constant nitrogen partial pressures were found to produce wide ranges of SiC resistivity. These effects will be analyzed in light of the process impact on gas phase elemental composition (1), crystal stress (2), dopant activation (3) and crystal defectivity (4). The goal of this paper is to provide additional insights regarding nitrogen incorporation during SiC PVT, and in turn drive towards a more holistic approach to control the resistivity of 4H n+ SiC material, based on the understanding established from SiC epitaxy technology.
Residual Stress in CVD-grown 3C-SiC Films on Si Substrates
Authors: Volinsky Alex A. , Kravchenko Grygoriy , Waters Patrick , Reddy Jayadeep Deva , Locke Chris , Frewin Christopher , Saddow Stephen E. 
Published: April 2011

ABSTRACTHaving superior mechanical properties, 3C-SiC is one of the target materials for power MEMS applications. Growing 3C-SiC films on Si is challenging, as there is a large mismatch in lattice parameter and thermal expansion between the SiC film and the Si substrate that needs to be accommodated, and results in high residual stress. Residual stress control is critical in MEMS devices as upon feature release it results in substantial deformation.3C-SiC single crystalline films were deposited on 50 mm (100) and (111) Si substrates in a hot-wall CVD reactor. The film tensile residual stress was so high that it fractured on the (111) Si wafer. The resulting film thickness on the (100) Si wafer was non-uniform, having a linear profile along the growth direction. This presented a challenge of using the substrate curvature method for calculating residual stress. Finite Element Method correction was applied to the Stoney's formula for calculating the residual stress along the wafer radius. Suggestions for reducing the amount of residual stress are made.
Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices
Authors: O'Loughlin Michael , Irvine K. G. , Sumakeris J. J. , Armentrout M. H. , Hull B. A. , Hallin C. , Burk A. A. 
Published: April 2011

ABSTRACTThe growth of thick silicon carbide (SiC) epitaxial layers for large-area, high-power devices is described. Horizontal hot-wall epitaxial reactors with a capacity of three, 3-inch wafers have been employed to grow over 350 epitaxial layers greater than 100 μm thick. Using this style reactor, very good doping and thickness uniformity and run-to-run reproducibility have been demonstrated. Through a combination of reactor design and process optimization we have been able to achieve the routine production of thick epitaxial layers with morphological defect densities of around 1 cm−2. The low defect density epitaxial layers in synergy with improved substrates and SiC device processing have resulted in the production of 10 A, 10 kV junction barrier Schottky (JBS) diodes with good yield (61.3%).
Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs
Authors: Haney Sarah Kay , Ryu Sei-Hyung , Dhar Sarit , Agarwal Anant , Johnson Mark 
Published: April 2011

ABSTRACTIn this paper, we investigate the effective inversion layer mobility of lateral 4H-SiC MOSFETs. Initially, lateral n-channel MOSFETs were fabricated to determine the effect of p-type epi-regrowth on a highly doped p-well surface. The negative effects of the high p-well doping are still seen with 1500 Å p-type regrowth, while growing 0.5 um or more appears to be sufficient to grow out of the damaged area. A second experiment was performed to examine the effects of doping during epitaxial regrowth versus using ion implantation after regrowth. Comparable mobilities and threshold voltages were observed for equivalent epitaxial and implanted doping concentrations.
Effect of Annealing Temperature on SiC Wafer Bow and Warp
Authors: Xu Xueping , Martin Chris 
Published: April 2011

ABSTRACTSingle-side polished silicon carbide wafers could exhibit large bow and warp due to the presence of mechanical damage on the unpolished surface. In this study, we investigated the effect of thermal annealing on the wafer bow. Two commercial-grade, double-side polished 3¡¨ 6H SiC wafers with the bow less than 5 μm were lapped using 12 μm diamond grit. One wafer was lapped on the C-face and another on the Si-face. The lapped wafers were subjected to annealing in vacuum at temperatures between 500¢XC and 2040¢XC. The wafer bow and x-ray rocking curves were measured prior to annealing and after each annealing step in order to evaluate the extent of the surface damage and degree of healing. Thermal annealing led to a decrease in the wafer bow and sharpening of the x-ray rocking curves. However, the wafer bow generated by lapping was not completely removed until annealing temperature reached ∼2000°C.
Performance of SiC Microwave Transistors in Power Amplifiers
Authors: Azam Sher , Jonsson R. , Janzen E. , Wahab Q. 
Published: April 2011

ABSTRACTThe performance of SiC microwave power transistors is studied in fabricated class-AB power amplifiers and class-C switching power amplifier using physical structure of an enhanced version of previously fabricated and tested SiC MESFET. The results for pulse input in class-C at 1 GHz are; efficiency of 71.4 %, power density of 1.0 W/mm. The switching loss was 0.424 W/mm. The results for two class-AB power amplifiers are; the 30-100 MHz amplifier showed 45.6 dBm (∼ 36 W) output powers at P1dB, at 50 MHz. The power added efficiency (PAE) is 48 % together with 21 dB of power gain. The maximum output power at P1dB at 60 V drain bias and Vg= -8.5 V was 46.7 dBm (∼47 W). The typical results obtained in 200-500 MHz amplifier are; at 60 V drain bias the P1dB is 43.85 dBm (24 W) except at 300 MHz where only 41.8 dBm was obtained. The maximum out put power was 44.15 dBm (26 W) at 500 MHz corresponding to a power density of 5.2 W/mm. The PAE @ P1dB [%] at 500 MHz is 66 %.
SiC-Based Power Converters
Authors: Tolbert Leon , Zhang Hui , Ozpineci Burak , Chinthavali Madhu S. 
Published: April 2011

ABSTRACTThe advantages that silicon carbide (SiC) based power electronic devices offer are being realized by using prototype or experimental devices in many different power applications ranging from medium voltage to high voltage or for high temperature or high switching frequency applications. The main advantages of using SiC-based devices are reduced thermal management requirements and smaller passive components which result in higher power density. An overview of the SiC research effort at Oak Ridge National Laboratory (ORNL) and The University of Tennessee (UT) is presented in this paper.
Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping
Authors: Do Seung-woo , Song Byung-Ho , Jung Ho , Kong Seong-Ho , Oh Jae-Geun , Lee Jin-Ku , Ju Min-Ae , Jeon Seung-Joon , Ku Ja-Chun , Lee Yong-Hyun 
Published: April 2011

ABSTRACTPlasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.
Source-drain Engineering for Channel-limited PMOS Device Performance: Advances in Understanding of Amorphization-Based Implant Techniques
Authors: Cowern Nick E. 
Published: April 2011

ABSTRACTThis paper discusses the role of amorphisation and residual end-of-range defects in p-channel source/drain engineering. A comparison between preamorphisation and molecular implant approaches shows up some important common features of electrical activation, diffusion, and junction leakage, related to the formation and location of boron-interstitial and self-interstitial clusters. The success of these techniques depends on confining ‘end-of-range’ defects – whether TEM-visible defects or sub-microscopic clusters – within the narrow region between the boron implant peak and the source-drain/halo depletion region. This observation points to significant improvements that can still be made in implantation processing for ultrashallow junctions.
Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal: Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers
Authors: Cho Yonah , Moroz Victor , Zographos Nikolas , Thirupapuliyur Sunderraj , Date Lucien , Schreutelkamp Robert 
Published: April 2011

ABSTRACTExperimental and simulated P and As dopant diffusion profiles in Si:C epi films containing high C (>1 atomic %) are presented. A new set of physical effects were incorporated to accurately model P or As diffusion in the presence of high level of C. Evolution of substitutional C (Csub) profile in the Si:C epi film through dopant implant and activation anneal was characterized by high-resolution x-ray diffraction (HRXRD) technique. Three-layer analysis was utilized to obtain non-uniform Csub profile. Dependency of Csub retention on anneal thermal budget is studied. It is shown the initial Csub in the epi layer is lost during dopant implantation and conventional spike anneal sequence. Use of advanced millisecond (ms) laser anneal resulted in near 100% Csub retention in P-implanted Si:C epi film without compromising junction depth. Measured Csub (by HRXRD) and total C (by SIMS) profiles are compared with the ones predicted by the newly developed compact modeling in this study.
Atomistic Simulation Techniques in Front-End Processing
Authors: Marqués Luis A. , Pelaz Lourdes , Santos Iván , López Pedro , Aboy María 
Published: April 2011

ABSTRACTAtomistic process models are beginning to play an important role as direct simulation approaches for front-end processes and materials, and also as a pathway to improve continuum modeling. Detailed insight into the underlying physics usingab-initiomethods and classical molecular dynamics simulations will be needed for understanding the kinetics of reduced thermal budget processes and the role of impurities. However, the limited sizes and time scales accessible for detailed atomistic techniques usually lead to the difficult task of relating the information obtained from simulations to experimental data. The solution consists of the use of a hierarchical simulation scheme: more fundamental techniques are employed to extract parameters and models that are then feed into less detailed simulators which allow direct comparison with experiments. This scheme will be illustrated with the atomistic modeling of the ion-beam induced amorphization and recrystallization of silicon. The model is based on the bond defect or IV pair, which is used as the building block of the amorphous phase. It is shown that the recombination of this defect depends on the surrounding bond defects, which accounts for the cooperative nature of the amorphization and recrystallization processes. The implementation of this model in a kinetic Monte Carlo code allows extracting data directly comparable with experiments.
Tight-Binding Theory of Phase-Change Materials
Authors: Harrison Walter A. 
Published: April 2011

ABSTRACTA simple theory of Ge, Sb, and Te crystals and glasses, based upon atomic valence orbitals with coupling given by universal parameters, is outlined. It is seen how dangling hybrids from Ge atoms can behave as negative U centers. In contrast, in Sb the nonbonding s orbitals play essentially no role, except to produce three-fold coordination and 90° bond angles. Te also has nonbonding s states, but also nonbonding p states causing two-fold coordination. These nonbonding p states form the top of the valence band, rather than the bond orbitals which formed the valence-band in Ge. We argue against lumping these totally different behaviors together as “lone pairs”. In the glass, bonds can form between all atom types, but bonds between different elements are energetically favored. Further, when Sb or Te atoms are involved, bonds can switch between neighbors with small energy change, in a manner suggested by Kastner, Adler and Fritsche. It is seen how to estimate the energy for these various different geometric configurations.