bluuebunny/crossref_metadata_2025_split huggingface dataset:
Characterization of Lead Zirconate Titanate (PZT) - Indium Tin Oxide (ITO) Thin Film Interface
Authors: Sreenivas K. , Sayer M. , Laursen T. , Whitton J. L. , Pascual R. , Johnson D. J. , Amm D. T. , Sproule G. I. , Mitchell D. F. , Graham M. J. , Gujrathi S. C. , Oxorn K. 
Published: March 2011

ABSTRACTThe interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle X-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITO layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films.
Processing of Stoichiometric and Ti Doped LiNbO3 Films with Preferred Orientation from Metal Alkoxides
Authors: Hirano S. , Kikuta K. , Kato K. 
Published: March 2011

ABSTRACTStoichiometric and Ti-doped LiNbO3 films could be synthesized by the organometallic route. The films were epitaxially crystallized at temperatures around 400°C on sapphire substrates. The reaction control of alkoxides in solvent was found to be very critical for adjusting the stoichiometry and the low temperature crystallization, as well as the crystallization in water vapor stream.
Characteristics of Metal/PZT/p—Si MIS Capacitors
Authors: Kalkur T.S. , Argos George , Kammerdiner Lee 
Published: March 2011

ABSTRACTLead Zirconate Titanate (PZT) thin films have been sputter deposited on p–Si. The patterned PZT films were annealed in a furnace as well as in a rapid thermal annealer. The high frequency characterization of metal–PZT– p– Si capacitors show good Capacitance–Voltage characteristics. The effective dielectric constant of PZT on Si was found to be very low and depends on the thickness of the PZT film and the annealing conditions. The high frequency C–V shows hysteresis which is due to the injection of charges across the interface.
Crystalline BaTiO3 Thin Film Prepared from Ti Metal by Hydrothermal-Electrochemical Method
Authors: Ishizawa Nobuo , Yoo Seung-Eul , Hayashi Motoo , Yoshimura Masahiro 
Published: March 2011

ABSTRACTThin film of crystalline barium titanate, BaTiO3, has been prepared from Ti metal at 100–200°C by a new technique called “hydrothermal-electrochemical method” which could be categorized into a variety of the extended hydrothermal method. The reaction was carried out in an electrolytic cell containing 0.1–0.5N Ba(OH)2 aqueous solutions at temperatures of 100–200°C and under saturated vapor pressures. Titanium metal substrate or Ti-deposited glass substrate was used for the anode and a Pt plate for the cathode. Between the electrodes, a constant current density up to 100 mA/cm2 was applied galvanostatically for 10–80 min. Surface of the BaTiO3 film was lustrous and free from any visible defects. Thickness of the BaTiO3 films ranged from 70nm to 300nm. The adhesion between the film and substrate was so strong that no exfoliation was observed. Similar BaTiO3 thin films with thickness less than 70 nm were also formed even in simple hydrothermal conditions without applying any electric current.
High-Speed Epitaxy Using Supersonic Molecular Jets
Authors: Eres Djula 
Published: March 2011

AbstractThis paper discusses the use of supersonic jets of gaseous source molecules in thin film growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates.
Surface Processes which Control the Deposition and Etching in the Sih4/H2/Si(S)-Glow Discharge System: The Competition Between Atoms, Ions and Electronics
Authors: Vepřek Stan , Ratz Günter , Meindl Klaus , Möler Wolfhard 
Published: March 2011

AbstractDepending on the glow discharge conditions, silicon can be either deposited or etched in the SiH4/H2/Si(s)-system. At floating potential and close to the Partial Chemical Equilibrium (PCE), the etching<--> deposition process is controlled by the temperature of the sample which, in turn, determines the local departure of the system from the PCE. At a constant temperature and under PCE-conditions, low energy ion and electron bombardment of the surface promotes the deposition and etching, respectively. At ion energies above the threshold for displacement damage, decrease of the deposition and etch yield is observed. A possible mechanistic explanation is suggested.
Oxygen Bubble Formation and Transformation During High-Dose Oxygen Implantation and Annealing of Silicon
Authors: Krause S. J. , Seraphin S. , Chen B. L. , Cordts B. , Roitman P. 
Published: March 2011

AbstractThe formation of bubbles during high dose implantation of oxygen into silicon, and the subsequent transformation of the bubbles during annealing, were studied with transmission electron microscopy (TEM). There was a threshold for bubble formation at a minimum dose of 0.3 × 1018 oxygen/cm2 and a lower temperature of 550°C. As dose increased the bubbles grew larger and the bubble trails lengthened. However, increasing beam current by a factor of 10 or increasing temperature to 700°C did not affect bubble formation. Bubble evolution during intermediate temperature annealing was also studied using TEM techniques. For 2 hour anneals between 1000 and 1100°C the oxygen bubbles transform into SiO2 particles by first forming a “shell” of SiO2, which then facets, grows inward, and finally completely transforms the bubble into an oxide particle. At temperatures greater than 1100°C the oxide particles dissolve by outdiffusion of the oxygen to the wafer surface.
Anisotropic Etching of Heavily Doped Polysilicon by a Hot Cl2 Molecular Beam
Authors: Ono T. , Hiraoka S. , Suzuki K. 
Published: March 2011

AbstractAnisotropic etching of n+ poly-Si is achieved using a hot Cl2 molecular beam and a sidewall protection technique. A hot molecular beam is produced by a free jet expansion of a gas heated in a furnace. A nitrogen radical beam is used to prevent the sidewall etching. The etch rate of n+ poly-Si is 4.3 nm/min at the anisotropic etching condition.
Defect Reduction and Defect Engineering in Silicon-on-Sapphire Material Using Ge Implantation
Authors: Namavar F. , Cortesi E. , Kalkhoran N. M. , Manke J. M. , Buchanan B. L. 
Published: March 2011

AbstractSubstantial reduction of defect density in silicon-on-sapphire (SOS) material is required to broaden its range of applications to include CMOS and bipolar devices. In recent years, solid phase epitaxy and regrowth (SPEAR) and double solid phase epitaxy (DSPE) processes were applied to SOS to reduce the density of defects in the silicon. These methods result in improved carrier mobilities, but also in increased leakage current, even before irradiation. In a radiation environment, this material has a large increase in radiation induced back channel leakage current as compared to standard wafers. In other words, the radiation hardness quality of the SOS declines when the crystalline quality of the Si near the sapphire interface is improved.In this paper, we will demonstrate that Ge implantation, rather than Si implantation normally employed in DSPE and SPEAR processes, is an efficient and more effective way to reduce the density of defects near the surface silicon region without improving the Si/sapphire interface region. Ge implantation may be used to engineer defects in the Si/sapphire interface region to eliminate back channel leakage problems.
Radiation Induced Grain Growth in Transition Metals
Authors: Børgesen P. , Lilienfeld D. A. , Msaad H. 
Published: March 2011

AbstractNanocrystalline self supporting thin films of Ni, Co, Cr, V, and Ti were irradiated with 600 keV Xe ions at liquid nitrogen temperature and the resulting grain growth was measured by transmission electron microscopy. Average grain sizes were seen to increase from about 10 nm to 18–35 nm, depending on the metal. Systematic variations did not support current thermal spike models.
Laser-Induced Growth of In-Sb-Se Thin Films
Authors: Kolev K. , Laude L. D. 
Published: March 2011

AbstractThree-elements (In-Sb-Se) alloy thin films are synthesized by laser irradiation of multi-layered films. Optical characterization of the films is performed function of laser fluence which helps defining optimized conditions for the production of good quality, homogeneous alloy films. Such films exhibit particularly high reflectiviy contrast (4:1) for the alloy SeSb2 25 In1.75·.
An In-Situ Study of Laser-Induced Plume Radiance and Thermal Effects of Laser Irradiated Polycarbonate and Poly(Methyl Methacrylate) Samples
Authors: Yip Pearl W. 
Published: March 2011

AbstractThreats of lasers to human eyes and electro-optics on the modern battlefield has been significantly increased due to the rapid growth of laser technology in military applications. Currently polycarbonate (PC) and poly [methyl methacrylate] (PMMA) are being used as transparencies for aircraft and goggle materials for aircrews and combat soldiers [Ref 1,2]. A carefully monitored laser test was conducted on these two particular polymers using a medium-power, continuous-wave CO2 laser to determine the brightness of the laser-induced plume radiance and how much luminance was transmitted to the back of the sample. Plume luminance for photopic (daytime) and scotopic (nighttime) visual conditions, as well as the recovery times for human eyes exposed to these levels of luminance were calculated. Our test results demonstrated that the plume induced by the CW CO2 laser irradiation can be an ocular hazard to soldiers operating behind these conventional transparent materials.
Thermocapillary Effects in Laser Direct-Write Metallization
Authors: Price Peter E. , Stuke Michael , Jensen Klavs F. 
Published: March 2011

AbstractA model describing melting and thermocapillary (or Marangoni) flow in laser irradiated thin films is presented. The free surface formulation leads to predictions of surface profiles that are in qualitative agreement with experimental observations. Additional experimental results for direct-writing of palladium from palladium acetate films demonstrate the influence of thermocapillary effects on the dynamics of the process.
Photo-Induced Reversible Modification of II-VI Semiconductor Surface Composition and Structure
Authors: Brewer P. D. , Zinck J. J. , Olson G. L. 
Published: March 2011

AbstractIt is shown that the composition and structure of CdTe and CdS surfaces can be reversibly controlled by excimer laser irradiation at fluences below the melting threshold. The removal rate is observed to depend exponentially on laser fluence up to the melting threshold. The translational energies of products desorbed from laser-irradiated CdTe surfaces were determined using time-of-flight spectrometry and are well-described by a Maxwellian velocity distribution. The dynamics of the photo-stimulated desorption process are correlated with the laser-induced changes in composition, and it is shown that the data are consistent with a thermal mechanism for desorption. A model is introduced which describes the reversible, fluence-dependent changes in composition and structure in terms of the kinetic competition between formation and desorption processes at the semiconductor surface.
Strain Modification and Thermal Stability of SixGe1−x Films Grown by Ion-Assisted Molecular Beam Epitaxy
Authors: Tsai C. J. , Atwater H. A. , Vreeland T. 
Published: March 2011

AbstractSignificant changes in strain are produced in SixGe1−x epitaxial films grown on Si and Ge (001) substrates as a result of low energy ion beam assisted molecular beam epitaxy (IAMBE). Films grown with concurrent Ar+ or Xe+ ion bombardment are coherent and uniformly strained in the growth direction by up to 1.5% in Ge films and 0.5% in Si films and contain no dislocations. The dependence of the films strain perpendicular to the growth surface on ion-atom flux ratio, and ion energy can be explained by the injection of uniformly distributed point defects. Post-growth isochronal annealing of SixGe1−x films suggests that the existing defects in the IAMBE films are defect complexes and that the strain relaxation path is determined by the overall thermodynamic driving force toward the strain-relieved state.
Atomic Absorption Spectroscopy: An In Situ Diagnostic for Sputter Deposition of Y-Ba-Cu-Oxide
Authors: Metzger G. , Blair A. J. , Fleddermann C. B. 
Published: March 2011

AbstractAtomic absorption spectroscopy (AAS) has been used as an in situ diagnostic tool to study sputtering of high-temperature superconductors. Hollow-cathode lamps were used as line sources to measure relative atomic species concentrations during sputtering of Y-Ba-Cu-oxide targets using a Kaufman ion gun. The AAS measurements showed that the fluxes of ground state Ba and Cu ejected from a composite target during argon- and oxygen-ion bombardment varied greatly with sputtering parameters. Measurements were made of the effects of changes in ion-beam energy, ion flux to the target, and target temperature. In addition, the variation in atomic densities of Ba and Cu with distance from the target were measured. For comparison, AAS measurements during argon- and oxygen-ion sputtering of a pure copper target were also performed. The AAS results were verified by measuring stoichiometry variations of thin films deposited under identical conditions.
Scanning Tunneling Microscopic Study of the Growth Process in Photochemical Vapor Deposition of Aluminum Film
Authors: Hanabusa Mitsugu , Sahara Kouji 
Published: March 2011

AbstractAluminum thin films were photodeposited on silicon wafer from dimethyl-aluminum hydride under illumination of the ultraviolet photons generated by a deuterium lamp with a distinguished wavelength dependence. Namely, the growth rates increase linearly with vapor pressure under illumination of the l60-nm vacuum ultraviolet band from the lamp, while the growth starts above 0.3 mTorr only with the 240-nm band. To study the early stage of photo-deposition of Al, we constructed a scanning tunneling microscope and observed Al, islands. Steep sides were observed on islands with the distinguished boundary between vertical and horizontal growth. The shape of islands formed in the illuminated region and in the dark area was identical, thus indicating the absence of photo-induced migration effects.
Use of Ion Scattering Spectroscopy to Monitor the Nb target Nitridation during Reactive Sputtering
Authors: Lichtenwalner D. J. , Anderson A. C. , Rudman D. A. 
Published: March 2011

AbstractIon scattering spectroscopy (ISS) has been used to directly monitor the nitrogen coverage of a niobium target during ion-beam reactive sputtering. This measurement shows that the fully reacted target is nearly completely covered with nitrogen. The functional dependence of the nitrogen coverage on the N2pressure has also been obtained. By taking the fractional target coverage to be a steady-state equilibrium between nitrogen sputter removal and thermal N2arrival, the measured target coverage has been accurately modeled. The results indicate that the nitridation reaction is controlled by the thermal N2molecules, which stick to the target with a high probability. This firmly establishes the fact that the molecular N2flux can control the target reaction. This target coverage model has also been applied to fit the measured deposition rate as a function of the N2pressure and shows that the deposition rate does not accurately reflect the target coverage. By modifying an existing reactive sputtering model, we show that the deposition rate can be modeled accurately by taking into account both the gettering reaction at the growing film and the target reaction.
Secondary Electron Emission Spectroscopy of Crystalline and Non-Crystalline Carbon Allotropes
Authors: Hoffman Alon , Prawer Steven 
Published: March 2011

AbstractThe Secondary Electron Emission (SEE) spectra of type Ha diamond, highly oriented pyrolytic graphite (HOPG), amorphous carbon (e-beam evaporated), glassy carbon and amorphic-diamond (filtered arc evaporated) were measured in the 0–80 eV electron kinetic energy range, and found to be very distinctive for the different carbon allotropcs. The sensitivity of SEE spectroscopy to crystal damage for the type Ha diamond surface was studied by performing SEE measurements as function of 1 keV argon ion irradiation dose. Two examples of the use of SEE in the characterization of diamond surfaces are presented. In the first, the crystalline quality of the back and front surfaces of a chemically vapour deposited diamond thin film which had dclaminated from a fused quartz substrate were compared using SEE and, in the second, SEE was used to provide a qualitative estimate of the damage induced by mechanical polishing of a natural diamond surface.
Evolution of Semiconductor Thin Film and Surface Microstructure During Ion Bombardment
Authors: Atwater H. A. 
Published: March 2011

ABSTRACTDefects created by ion irradiation can enable new modes of microstructural development at interfaces and surfaces in semiconductor thin films. Two examples are described. First, novel kinetic paths for microstructural evolution via MeV ion beam modification of amorphous-crystal interface motion in Si are discussed. At intermediate temperatures, amorphous layer formation is initiated at interfaces such as surfaces and grain boundaries in polycrystalline Si. Irradiation at higher temperatures during the early stages of Si crystallization leads to a significant enhancement of the crystal nucleation rate, while nearly complete suppression of crystal nucleation during crystal growth can be achieved by a cyclic irradiation-induced amorphization and thermal growth process. Second, a new development in misfit strain accommodation in epitaxial semiconductor films is described in which ion-induced injection of point defect complexes can produce coherent, uniformly strained epitaxial thin films. Measurement of strain in epitaxial films can be used to distinguish between surface and sub-surface atomic displacements generated by a low energy ion beam.
In Situ Stress Measurements during the reaction of WF6 with Si(100)
Authors: Leusink G. J. , Heerkens C. Th. H. , Janssen G. C. A. M. , Radelaar S. 
Published: March 2011

ABSTRACTWe present measurements on the intrinsic stress developing during chemical vapour deposition of W and WSi2 from the reaction between WF6 and Si (100). It will be shown that depending on temperature and WF6 partial pressure, three growth modes, corresponding with three different stress developments, can be distinguished. The results can be explained with three basic processes. The intrinsic tensile stress during the deposition of self limited W can be as high as 2 GPa.
Intrinsic Growth Stress in Thermally Grown and Annealed SiO2 Thin Films: Control of Stress-Induced Electronically Active Defects at Si/SiO2 Interfaces
Authors: Bjorkman C. H. , Lee D. R. , Lucovsky G. 
Published: March 2011

ABSTRACTWe find that the density of electronically active defect states, formed close to the Si/SiO2 interface during high temperature oxidation (Tox > 800°C), is proportional to the thickness-averaged stress or strain in the oxide layer. This was established by measuring the midgap interface state density, Dit, and correlating it with: i) a direct measurement of the stress, using a beam deflection technique; and ii) a determination of the oxide strain, using infrared (IR) spectroscopy and a model that relates the frequency of the Si-O bond-stretching vibration to the microscopic strain in the oxide.In addition, the elastic stress at the Si/SiO2 interface has been modified by film deposition onto the SiO2 surface of Si:3N4 film or a variable thickness of an Al gate metal. The additional elastic stress introduced by these depositions did not influence Dit. These observations lead us to conclude that interface traps are generated by “local plastic deformations” that occur during the oxidation process, and are localized in the immediate vicinity of the Si/SiO2 interface.
Electroless Deposition and Characterization of Pd Thin Films on Hydrogenated Amorphous Silicon
Authors: Chou M. L. , Manning N. , Chen Haydn 
Published: March 2011

ABSTRACTElectroless palladium thin films have been successfully deposited on hydrogenated amorphous Si from a palladium-ammine bath. The d.c. magnetron reactive sputtered 18% hydrogenated amorphous silicon (a-Si:H) possessed a hydrogen passivated surface, using an activation step prior to the electroless deposition to obtain a film with good uniformity. The specially prepared hypophosphite-based dilute metal ion bath exhibited good stability at low operating temperatures of 35–50 °C. The morphology and microstructure of the Pd aggregates were characterized by scanning transmission electron microscopy (STEM) and energy dispersive x-ray spectroscopy (EDX), while the Pd aggregates and as-deposited films from the citrate and NH3/NH4Cl baths were examined by scanning electron microscopy (SEM). Marked differences in morphology and distribution of the Pd aggregates on activated a-Si:H and c-Si substrates were observed and discussed. The as-deposited films with higher coverage from the NH3/NH4Cl bath were typically more uniform and crack-free, while those from the citrate bath suffered from incorporated hydrogen, resulting in bare spots, microcracks and local a-Si film peeling. Auger Electron Spectroscopy (AES) revealed a higher amount of co-deposited phosphorus in NH3/NH4Cl bath films than citrate bath films.
Microscopic Determination of Stress Distribution in Gaas Grown at Low Temperature on GaAs (100)
Authors: Liliental-Weber Zuzanna , Ishikawa A. , Teriauchi M. , Tanaka M. 
Published: March 2011

ABSTRACTA microscopic strain distribution across commensurate interfaces between GaAs layers grown on semi-insulating GaAs substrates was observed by means of convergent beam electron diffraction (CBED) and large angle convergent beam methods (LACBED). Strain relaxation at a specific distance from the interface was observed in these layers without formation of misfit dislocations. It was proposed that specific point defects distributed close to the interface can explain the asymmetric broadening of high-order Laue zone (HOLZ) lines in the CBED patterns.
X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon
Authors: Doll G. L. , Sell J. A. , Wims A. , Taylor C. A. , Clarke R. 
Published: March 2011

ABSTRACTWe report the growth of boron nitride films on (001), (110), and (111) faces of silicon using the method of pulsed excimer laser ablation. The structure of the Alms grown on the (001) and (110) orientations of Si is cubic zincblende with a lattice constant of 3.619 Å. The films were found to be heteroepitaxial on silicon (001) with the cubic BN (100) axes parallel to Si (100), as characterized by x-ray diffraction and high-resolution transmission electron microscopy. In that system, we find evidence for an unusual 3:2 commensurate lattice matching. The films appear to cubic but randomly oriented on the Si (110), and no evidence for crystallinity is found for films grown on Si (111).