bluuebunny/crossref_metadata_2025_split huggingface dataset:
Assessment of limestone deterioration due to salt formation by micro‐Raman spectroscopy: application to architectural heritage
Authors: Kramar Sabina , Urosevic Maja , Pristacz Helmut , Mirtič Breda 
Published: May 2010

AbstractSalt crystallisation is a principal deterioration factor of many stone monuments. In this study, samples of weathering products of two baroque monuments in Ljubljana, Slovenia (the Fountain of Three Carniolian Rivers and the side altar of the Church of St. James), as well as the limestone used in their construction (Lesno Brdo limestone) were investigated in order to ascertain the main mineral phases produced during the weathering process. A combination of micro‐Raman spectroscopy and X‐ray powder diffraction was successfully applied to identify micrometre‐size minor components in the limestone and the weathering product phases. In addition to calcite and dolomite as the main components of the Lesno Brdo limestone, quartz, anatase, goethite, haematite and phyllosilicates were also determined as minor limestone minerals. The limestone was found to be extensively deteriorated in both outdoor and indoor environments in the studied historical monuments, showing flaking, subflorescence, efflorescences, crumbling and black and white crusts as a result of the deterioration phenomena. Among these weathering forms, efflorescences were found to be more complex in terms of mineral assemblage, where gypsum was associated to hexahydrite, pentahydrite, and nitre. In contrast to the efflorescences, the mineralogy of subflorescences as well as that of white and black crust from outdoor and indoor conditions was rather simple, composed of only gypsum. The results showed that gypsum also crystallised under the surface as subflorescence, which eventually led to the flaking and crumbling of the limestone. Copyright © 2010 John Wiley & Sons, Ltd.
Measurement of the absolute Raman scattering cross sections of sulfur and the standoff Raman detection of a 6‐mm‐thick sulfur specimen at 1500 m
Authors: Aggarwal R. L. , Farrar L. W. , Polla D. L. 
Published: May 2010

AbstractThe absolute Raman scattering cross sections (σRS) for the 471, 217, and 153 cm−1 modes of sulfur were measured as 6.0 ± 1.2 × 10−27, 7.7 ± 1.6 × 10−27, and 1.2 ± 0.24 × 10−26 cm2 at 815, 799, and 794 nm, respectively, using a 785‐nm pump laser. The corresponding values of σRS at 1120, 1089, and 1081 nm were determined to be 1.5 ± 0.3 × 10−27, 1.2 ± 0.24 × 10−27, and 1.2 ± 0.24 × 10−27 cm2 using a 1064‐nm laser. A temperature‐controlled, small‐cavity (2.125 mm diameter) blackbody source was used to calibrate the signal output of the Raman spectrometers for these measurements. Standoff Raman detection of a 6‐mm‐thick sulfur specimen located at 1500 m from the pump laser and the Raman spectrometer was made using a 1.4‐W, CW, 785‐nm pump laser. Copyright © 2010 John Wiley & Sons, Ltd.
Screening for serious mental illness in the general population with the K6 screening scale: results from the WHO World Mental Health (WMH) survey initiative
Authors: Kessler Ronald C. , Green Jennifer Greif , Gruber Michael J. , Sampson Nancy A. , Bromet Evelyn , Cuitan Marius , Furukawa Toshi A. , Gureje Oye , Hinkov Hristo , Hu Chi‐Yi , Lara Carmen , Lee Sing , Mneimneh Zeina , Myer Landon , Oakley‐Browne Mark , Posada‐Villa Jose , Sagar Rajesh , Viana Maria Carmen , Zaslavsky Alan M. 
Published: May 2010

AbstractData are reported on the background and performance of the K6 screening scale for serious mental illness (SMI) in the World Health Organization (WHO) World Mental Health (WMH) surveys. The K6 is a six‐item scale developed to provide a brief valid screen for Diagnostic and Statistical Manual of Mental Disorders 4th edition (DSM‐IV) SMI based on the criteria in the US ADAMHA Reorganization Act. Although methodological studies have documented good K6 validity in a number of countries, optimal scoring rules have never been proposed. Such rules are presented here based on analysis of K6 data in nationally or regionally representative WMH surveys in 14 countries (combinedN= 41,770 respondents). Twelve‐month prevalence of DSM‐IV SMI was assessed with the fully‐structured WHO Composite International Diagnostic Interview. Nested logistic regression analysis was used to generate estimates of the predicted probability of SMI for each respondent from K6 scores, taking into consideration the possibility of variable concordance as a function of respondent age, gender, education, and country. Concordance, assessed by calculating the area under the receiver operating characteristic curve, was generally substantial (median 0.83; range 0.76–0.89; inter‐quartile range 0.81–0.85). Based on this result, optimal scaling rules are presented for use by investigators working with the K6 scale in the countries studied.Copyright©2010 John Wiley & Sons, Ltd.
Development of a brief mental health impairment scale using a nationally representative sample in the USA
Authors: Novak Scott P. , Colpe Lisa J. , Barker Peggy R. , Gfroerer Joseph C. 
Published: May 2010

AbstractA psychometric analysis was conducted to reduce the number of items needed to assess the disability associated with mental disorders using the World Health Organization Disability Assessment Schedule (WHODAS). The WHODAS was to be used in the Substance Abuse and Mental Health Services Administration National Survey on Drug Use and Health (NSDUH), beginning in 2008, as part of a screening algorithm to produce estimates of the prevalence of serious mental illness (SMI) in the US adult population. The goal of the work presented in this paper was to create a parsimonious screening scale from the full 16‐item WHODAS that was administered to 24 156 respondents (aged 18?) in the 2002 NSDUH. Exploratory factor analysis showed that WHODAS responses were unidimensional. A two‐parameter polytomous Item Response Theory model showed that all 16 WHODAS items had good item discrimination (slopes greater than 1.0) for each response option. Analysis of item difficulties and differential item function across socio‐demographic categories was then used to select a subset of eight items to create a short version of the WHODAS. The Pearson correlation between scores in the original 16‐item and reduced eight‐item WHODAS scales was 0.97, documenting that the vast majority of variation in total scale scores was retained in the reduced scale. Copyright © 2010 John Wiley & Sons, Ltd.
Direct in vivo measurement of glycine and the neurochemical profile in the rat medulla oblongata
Authors: Xin Lijing , Gambarota Giulio , Duarte João M. N. , Mlynárik Vladimír , Gruetter Rolf 
Published: May 2010

AbstractThe medulla oblongata (MO) contains a high density of glycinergic synapses and a particularly high concentration of glycine. The aims of this study were to measure directly in vivo the neurochemical profile, including glycine, in MO using a spin‐echo‐based 1H MRS sequence at TE = 2.8 ms and to compare it with three other brain regions (cortex, striatum and hippocampus) in the rat. Glycine was quantified in MO at TE = 2.8 ms with a Cramér–Rao lower bound (CRLB) of approximately 5%. As a result of the relatively low level of glycine in the other three regions, the measurement of glycine was performed at TE = 20 ms, which provides a favorable J‐modulation of overlapping myo‐inositol resonance. The other 14 metabolites composing the neurochemical profile were quantified in vivo in MO with CRLBs below 25%. Absolute concentrations of metabolites in MO, such as glutamate, glutamine, γ‐aminobutyrate, taurine and glycine, were in the range of previous in vitro quantifications in tissue extracts. Compared with the other regions, MO had a three‐fold higher glycine concentration, and was characterised by reduced (p < 0.001) concentrations of glutamate (−50 ± 4%), glutamine (–54 ± 3%) and taurine (−78 ± 3%). This study suggests that the functional specialisation of distinct brain regions is reflected in the neurochemical profile. Copyright © 2010 John Wiley & Sons, Ltd.
Cu2ZnSnS4 thin film solar cells by fast coevaporation
Authors: Schubert Björn‐Arvid , Marsen Björn , Cinque Sonja , Unold Thomas , Klenk Reiner , Schorr Susan , Schock Hans‐Werner 
Published: May 2010

AbstractSolar cells based on kesterite‐type Cu2ZnSnS4 (CZTS) were fabricated on molybdenum coated soda lime glass by evaporation using ZnS, Sn, Cu, and S sources. The coevaporation process was performed at a nominal substrate temperature of 550°C and at a sulfur partial pressure of 2–3 × 10−3 Pa leading to polycrystalline CZTS thin films with promising electronic properties. The CZTS absorber layers were grown copper‐rich, requiring a KCN etch step to remove excess copper sulfide. The compositional ratios as determined by energy‐dispersive X‐ray spectroscopy (EDX) after the KCN etch are Cu/(Zn + Sn): 1.0 and Zn/Sn: 1.0. A solar cell with an efficiency of 4.1% and an open‐circuit voltage of 541 mV was obtained. Copyright © 2010 John Wiley & Sons, Ltd.
The 4th Human Kidney and Urine Proteome Project (HKUPP) Workshop 26 September 2009, Toronto, Canada
Authors: Yamamoto Tadashi 
Published: May 2010

AbstractThe Human Kidney and Urine Proteome Project (HKUPP) was initiated to promote proteomics research in the nephrology field, to better understand kidney functions as well as pathogenic mechanisms of kidney diseases, and to define novel biomarkers and therapeutic targets. The 4th workshop held in September 2009 discussed problems of proteomics analysis for kidney tissues and urine samples and a standard protocol for collection, storage and protein concentration of urine samples was decided upon.
Human Brain Proteome Project – 12th HUPO BPP Workshop 26 September 2009, Toronto, Canada
Authors: Gröttrup Bernd , Eisenacher Martin , Stephan Christian , Marcus Katrin , Lee Bonghee , Meyer Helmut E. , Mok Park Young 
Published: May 2010

AbstractThe HUPO Brain Proteome Project (HUPO BPP) held its 12th workshop in Toronto on 26 September 2009 prior to the HUPO VIII World Congress. The principal aim of this project is to obtain a better understanding of neurodiseases and ageing, with the ultimate objective of discovering prognostic and diagnostic biomarkers, in addition to the development of novel diagnostic techniques and new medications. The attendees came together to discuss progress in the human clinical neuroproteomics and to define the needs and guidelines required for more advanced proteomic approaches.
AlN synthesis on AlN/SiC template using Li–Al–N solvent
Authors: Kangawa Yoshihiro , Kakimoto Koichi 
Published: May 2010

AbstractWe investigated the possibility of AlN synthesis using Li‐Al‐N solvent. In this work, Li‐Al‐N solvent was obtained by heating a mixture composed of Al and Li3N. First, we studied the relationship between Al/Li3N composition of the initial mixture and shape of obtained crystal. The results showed that polyhedral crystals instead of needle‐like crystals were obtained under an Al‐rich condition, i.e., 4/3 < Al/Li3N < 4/1. Next, we performed AlN synthesis on an AlN/SiC template under an Al‐rich condition. The results suggested that a large AlN single‐phase region was formed by using the template. The possibility of growth of bulk AlN using Li‐Al‐N solvent was shown by the present investigations.
Fabrication of transparent nanocrystalline InGaO3(ZnO)2 thin films using a solution process
Authors: Kim Kyung Ho , Kim Gun Hee , Kim Hyun Jae 
Published: May 2010

AbstractWe used a solution process to fabricate transparent nanocrystalline (nc) InGaO3(ZnO)2 thin films on a glass substrate. The formation of the nanocrystals resulted from a self‐solid phase reaction (S‐SPR). The nanocrystals began to form at a temperature of ∼300 °C, and grew gradually with increasing postannealing temperatures. The optical transmittance of the nc‐InGaO3(ZnO)2 thin film was ∼92% in the visible range. Fewer oxygen deficiencies occurred in the InGaO3(ZnO)2 thin film that was transited from the amorphous (a) to the nc phase. The ratio of oxygen to indium, gallium, and zinc was 1.16, which is close to the stoichiometric value for the nc‐InGaO3(ZnO)2 thin film.
Ultraviolet photoconductive sensor based on single ZnO nanowire
Authors: Lupan O. , Chai G. , Chow L. , Emelchenko G. A. , Heinrich H. , Ursaki V. V. , Gruzintsev A. N. , Tiginyanu I. M. , Redkin A. N. 
Published: May 2010

AbstractZnO nanowires were synthesized by the CVD procedure and have been investigated by SEM, TEM, SAED, Raman, and cw PL spectroscopy. The fabrication of an ultraviolet (UV) photoconductive detector based on single ZnO nanowire (100 nm in diameter) is presented. This nanostructure detector is prepared in an Focused Ion Beam (FIB) set‐up by using nanodeposition for metal electrodes. The photoresponse of the UV sensor are studied using a UV source with an incident peak wavelength of 365 nm. It was demonstrated that the output signal of the sensors is reproducible under UV irradiation. The photoresponse and characteristics of the ZnO nanowire‐device demonstrates that focused ion beam process offers a way to fabricate novel nanodevices on a single ZnO nanowire with diameters as small as 100 nm. The presented single ZnO nanowire sensor proves to be promising for application in various processes.
Transparent electrodes based on metal and metal oxide stacked layers grown at room temperature on polymer substrate
Authors: Guillén C. , Herrero J. 
Published: May 2010

AbstractTransparent electrodes based on very thin stacked layers of Al‐doped zinc oxide (AZO) and Ag have been prepared on conventional soda lime glass and flexible polyethylene terephthalate substrates by sputtering at room temperature. The optical, electrical and structural characteristics of AZO/Ag/AZO multilayer electrodes have been analysed at different preparation stages and compared onto glass and polymer substrates. Such structures have shown sheet resistance below 6 Ω sq−1 and maximum transmittance around 85% near 600 nm by discounting the corresponding substrate, with a low material consumption owing to the whole electrode thickness is below 100 nm. The band gap energy has been found dependent on the structural distortion of the as‐grown polycrystalline AZO films, being both parameters higher on the polymer than on the glass substrates.
Dielectric modeling of transmittance and ellipsometric spectra of thin In2O3:Sn films
Authors: Qiao Zhaohui , Mergel Dieter 
Published: May 2010

AbstractThin ITO films with thickness between 0.05 and 0.4 µm were deposited on quartz substrates by direct‐current magnetron‐sputtering. The films' ellipsometric and transmittance spectra between 280 and 2500 nm were simulated simultaneously with a computer program based on dielectric modeling. The dielectric function used is the sum of three types of electronic excitations: intraband transitions of free electrons (extended Drude model), band gap transitions, and interband transitions into the upper half of the conduction band. A successful fit of the simulated to the experimental curves was obtained with a two‐layer model (bulk and surface layers) and applying the Bruggeman effective‐medium approach. From the simulation, film thickness, refractive index, band gap, and free carrier density can be obtained. The thickness of the surface layer is comparable with the surface roughness determined by AFM measurements.
On the mechanism of conductivity enhancement and work function control in PEDOT:PSS film through UV‐light treatment
Authors: Moujoud Abderrafia , Oh Sang Hoon , Shin Hyun Soo , Kim Hyun Jae 
Published: May 2010

AbstractIn this work, we study the effect of UV light on the work function of PEDOT:PSS films. The authors found that UV irradiation lead to an increase in the work function. Several devices with UV exposed and unexposed PEDOT:PSS were fabricated and measured. The current–voltage characteristics have been obtained for ITO/PEDOT:PSS/InZnO samples. We found that UV irradiated devices show better electrical characteristics and lead to Ohmic contact. The trend in device performance was explained by the observed changes in the work function of the PEDOT:PSS layer. The change in the work function was measured by ultraviolet photoelectron spectroscopy. The structural and morphological properties of PEDOT:PSS films with and without UV treatment were investigated by X‐ray photoelectron spectroscopy and atomic force microscopy techniques. The change in the work function of PEDOT:PSS is mainly due to the surface conformational change. The stability of devices with and without UV treatment has been investigated under normal environmental conditions. Electrical properties of the devices have been studied over a period of 30 and 60 days. The stability tests show that devices with UV treatment are more stable that those without UV treatment.
Sol–gel prepared (Ga1−xInx)2O3 thin films for solar‐blind ultraviolet photodetectors
Authors: Kokubun Yoshihiro , Abe Torataro , Nakagomi Shinji 
Published: May 2010

AbstractWe prepared (Ga1−xInx)2O3 thin films at 900 °C using a sol–gel method, from a 2‐methoxyethanol solution of gallium isopropoxide and indium isopropoxide stabilized by monoethanolamine on (0001) sapphire substrates. X‐ray diffraction showed that films prepared from solutions with an indium content below 0.4 are single phase with the same monoclinic structure as β‐Ga2O3 and that increasing the indium content increases the lattice constants. Optical absorption showed that the band gap decreased linearly to 4.2 eV as indium content increased to 0.3. Planar geometry photoconductive detectors have been fabricated on the (Ga1−xInx)2O3 thin films prepared from the solution with an indium content below 0.2. They showed photosensitivity in the solar‐blind region, and the long wavelength threshold of spectral response shifted toward longer wavelengths with an increasing indium content. Furthermore, heterojunction structures composed of Ga2O3 and (Ga1−xInx)2O3 were also fabricated and characterized by transmission electron microscopy and optical absorption.
Applications of ZnO:Al deposited by RF sputtering to InN low‐cost technology
Authors: Fernández S. , Naranjo F. B. , Valdueza‐Felip S. , de Abril O. 
Published: May 2010

AbstractInN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio‐frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as‐deposited layer on InN was achieved. A specific contact resistance of 2 Ω cm2 was measured without any post‐deposition treatment. These properties could result very promising for optoelectronic device applications.
Origin of high‐density hole doping and anisotropic hole transport in a wide gap layered semiconductor LaCuOSe studied by first‐principles calculations
Authors: Hiramatsu Hidenori , Kamiya Toshio , Ueda Kazushige , Hirano Masahiro , Hosono Hideo 
Published: May 2010

AbstractLaCuOSe is a wide gap (Eg = 2.8 eV) p‐type semiconductor. Epitaxial films may be converted to a degenerate semiconductor with hole concentrations (nh) > 1 × 1021 cm−3 by doping Mg ions to the La sites. We, however, found that the Mg concentration in the highest nh film was too low (<1%) to explain the high nh. Further, we observed large subgap absorption and no Burstein–Moss (BM) shift in the doped LaCuOSe, which contradict with a rigid‐band scheme. The doping stability was examined by density functional theory (DFT) calculations. The results showed that the substitution of the La site with an Mg ion needs a large extra energy and is not stable. Alternatively, copper vacancies are easily formed and work as shallow acceptors. On the other hand, it is also revealed that the calculation results are unable to explain the subgap absorption and the absence of a BM shift. Carrier transport calculations based on DFT and the Boltzmann transport theory were also performed, which provided information about anisotropic carrier transport in the layered crystal structure.
Optoelectronic properties of transparent p‐type semiconductor CuxS thin films
Authors: Parreira P. , Lavareda G. , Valente J. , Nunes F.T. , Amaral A. , de Carvalho C. Nunes 
Published: May 2010

AbstractNowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n‐type conductivity. The fabrication of a transparent p‐type semiconductor with good optoelectronic properties (comparable to those of n‐type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p‐type narrow‐band‐gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu2S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p‐type semiconductors. In this work CuxS thin films were deposited on alkali‐free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p‐type thin film transistor. In our CuxS thin films, p‐type high conductivity with a total visible transmittance of about 50% have been achieved.
Influence of post‐deposition annealing of PVP/pentacene films on characteristics of organic thin film transistors
Authors: Kim K.‐J. , Yoo H. , Jeong S.‐W. , Roh Y. 
Published: May 2010

AbstractWe report the roles of post‐deposition annealing of PVP/pentacene double‐layered films on the electrical properties of organic thin film transistors (OTFTs). Data obtained by atomic force microscopy (AFM) and X‐ray diffraction (XRD) techniques demonstrate that both the grain size and the (001) peak intensity of pentacene films increase as the annealing temperature increases, resulting in clear dendrite structure after annealing at 100 °C in N2 ambient. These physical properties were also confirmed by electrical conductivity (EC) of pentacene films. The electrical properties of OTFTs were improved with increasing the annealing temperature in general: Especially, mobility and on/off ratio of the OTFTs subjected to the 100 °C annealing process were 0.32 cm2/Vs and 106, respectively, which were both improved at least one order of magnitude as compared to those measured from the samples without annealing.
Influence of RF power on the properties of sputtered ZnO:Al thin films
Authors: Antony Aldrin , Carreras Paz , Keitzl Thomas , Roldán Rubén , Nos Oriol , Frigeri Paolo , Miguel Asensi José , Bertomeu Joan 
Published: May 2010

AbstractTransparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as‐deposited films were found to be influenced by the deposition power. The X‐ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44–3.58 eV. The lowest resistivity of 1.2 × 10−3 Ω cm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power.