bluuebunny/crossref_metadata_2025_split huggingface dataset:
C-reactive protein and venous thromboembolism: causal or casual association?
Authors: Lippi Giuseppe , Favaloro Emmanuel J. , Montagnana Martina , Franchini Massimo 
Published: August 2010

AbstractThe plasma concentration of C-reactive protein (CRP), the first acute-phase protein to be identified, increases dramatically following tissue injury or inflammation. Although the physiological role of CRP is still not fully known, it has been suggested that concentrations might increase as part of the acute-phase response for facilitating non-specific immune functions, defense against bacterial pathogens, clearance of apoptotic and necrotic cells to prevent immunization against autoantigens and acceleration of the repair process. In agreement with the evidence that inflammation plays a pivotal role in the pathogenesis of atherosclerosis, CRP concentrations have been associated with cardiovascular disease, and measurement of CRP has therefore been proposed as a valuable aid to predict and stratify the risk of myocardial infarction and stroke. Recently, some clinical and biological evidence in support of the hypothesis that CRP might be also involved in the onset of venous thrombosis have emerged. Native and monomeric CRP exert several prothrombotic activities, including activation of blood coagulation, impairment of the endogenous fibrinolytic capacity, and stimulation or enhancement of platelet adhesiveness and responsiveness. Epidemiological investigations have also shown that CRP concentrations are associated with increased risk of venous thromboembolism and, even more interestingly, that statins might be effective in reducing the risk of this pathology. Although there is increasing emphasis that CRP might not only be a marker but also an active player in the development of venous thrombosis, further evidence is needed to establish which event comes first – thrombosis or inflammation.Clin Chem Lab Med 2010;48:1693–701.
Physical Rock Matrix Characterization: Structural and Mineralogical Heterogeneities in Granite
Authors: Voutilainen Mikko , Lamminmäki Suvi , Timonen Jussi , Siitari-kauppi Marja , Breitner Daniel 
Published: August 2010

AbstractEvaluation of the transport and retardation properties of rock matrices that serve as host rock for nuclear waste repositories necessitates their thorough pore-space characterization. Relevant properties to be quantified include the diffusion depth and volume adjacent to water conducting features. The bulk values of these quantities are not sufficient due to the heterogeneity of mineral structure on the scale of the expected transport/interaction distances.
In this work the 3D pore structure of altered granite samples with porosities of 5 to 15%, taken next to water conducting fractures at 180 200 m depth in Sievi, Finland, was studied. Characterization of diffusion pathways and porosity were based on quantitative autoradiography of rock sections impregnated with C14-labelled polymethylmethacrylate (PMMA). Construction of 3D structure from PMMA autoradiographs was tested. The PMMA method was augmented by field emission scanning electron microscopy and energy-dispersive X-ray analyses (FESEM/EDAX) in order to study small pore-aperture regions in more detail and to identify the corresponding minerals. The 3D distribution of minerals and their abundances were determined by X-ray microtomography. Combining the mineral specific porosity found by the PMMA method with these distributions provided us with a 3D porosity distribution in the rock matrix.
Rapid-solidified Magnetostrictive Polycrystalline Strong-Textured Galfenol (Fe-Ga) Alloy and its Applications for Micro Gas-valve
Authors: Saito Chihiro , Tanaka Masamune , Okazaki Teiko , Furuya Yasubumi 
Published: August 2010

AbstractThe melt-spun, rapid solidified Galfenol (Fe-Gax, (17≤x≤19)) ribbon sample showed a clear angular dependency on magnetostriction and large magnetostriction (180-200ppm) and good ductility, higher strength etc..as compared with conventional bulk sample. This large magnetostriction is caused by non-precipitating of the ordered phases the release of considerable large internal stresses in as-spun ribbon as well as the remained [100] oriented strong textures after annealing. These are worthy for engineering application as a actuator/sensor devices, therefore, we will introduce the micro-valve which was designed as a device for micro gas-flow control. Bimorph-type FeGa/Ni with the opposite value (FeGa(+),Ni(-)) of magnetostriction coefficient. Large displacement of opposite type could be obtained and it degree and hysteresis curve changed depending the volume fraction of the composite actuator structure.
Rheology and Electrorheology of Nanorod-Loaded Liquid Crystalline Polymers
Authors: Cameron-Soto Ana Raquel , Aviles-Barreto Sonia Lizmar , Acevedo-Rullan Aldo 
Published: August 2010

AbstractThe effect of carbon nanotube concentration and dispersion on the rheology of liquid crystalline solutions of hydroxypropylcellulose (HPC) has been experimentally studied. The rheology of nanocomposites of HPC and multiwalled carbon nanotubes (MWCNT) in m-cresol was characterized in steady-state and transient dynamic tests. The rheology as particle loading increases shows a very distinct response in the magnitude and scaling of the steady-state viscosity, and the storage and loss modulus. The liquid crystalline phase was characterized by direct observations by reflected polarized light microscopy. Additionally, an electric-field effect was observed on the rheology of the HPC/MWCNT in m-cresol soft composites. The HPC in m-cresol matrix is non-responsive, thus the electrorheological effect is due to the presence of the carbon nanotubes. The mechanism for this effect is still uncertain, since it does not follow the scaling predicted by simple models for heterogeneous or homogeneous ER fluids.
Enhanced Vascular Endothelial Cell Function on Nanostructured Titanium Surface Features: The Role of Nano to Submicron Roughness
Authors: Lu Jing , Khang Dongwoo , Webster Thomas J. 
Published: August 2010

ABSTRACTTo study the contribution of different surface feature properties in improving vascular endothelial cell adhesion, rationally designed nano/sub-micron patterns with various dimensions were created on titanium surfaces in this study. In vitro results indicated that endothelial cell adhesion was improved when the titanium pattern dimensions decreased into the nano-scale. Specifically, endothelial cells preferred to adhere on sub-micron and nano rough titanium substrates compared to flat titanium. Moreover, titanium with nano and sub-micron roughness and with the same chemistry as compared to flat titanium, had significantly greater surface energy. Thus, the present study indicated the strong potential of surface nanotopography and nano/sub-micron roughness for improving current vascular stent design.
A Novel Approach to Synthesis and Characterization of Biocompatible ZnO Nanoparticles
Authors: Nag N. , Doak J. , Gupta R. K. , Mishra S. , Kahol P. K. , Ghosh K. , Manivannan K. 
Published: August 2010

AbstractZinc Oxide nanoparticles (ZnO) being biocompatible and chemically stable have great potential for bio-medical applications that includes anti-bacterial and mold prevention, air ventilation and purification, water purification, self cleaning and photosynthesis, and disease detection. Also ZnO is a wide band gap semiconductor and exhibits piezoelectric and pyroelectric properties, which makes it a perfect candidate for building electrochemically coupled sensors and transducers. With all these unique properties, ZnO has the potential to be very important nanomaterial in material research area. Therefore, research, development, and production of ZnO nanoparticles would make notable contributions to the field of nanotechnology. In this paper we report a novel approach for the fabrication of ZnO nanoparticles suspension in deionized water at room temperature using pulsed laser deposition (PLD) technique. Particle size was controlled by the number of shots of the laser beam used. Characterization of the nanoparticles has been done using UV-Visible spectroscopy, fluorescence spectroscopy, transmission electron microscopy (TEM), and dynamic light scattering (DLS). UV-Visible study confirmed the existence of ZnO nanoparticles showing a peak at around 300 nm which is consistent with the absorption spectra of standard ZnO nanoparticles. Presence of ZnO was reconfirmed by the excitation and emission spectra obtained from fluorescence spectroscopy. The excitation and emission peaks were found at 305 nm and 410 nm respectively, strongly suggesting the characteristic peaks for ZnO nanoparticles. Transmission electron microscope (TEM) photographs established that we have successfully prepared ZnO nanoparticles suspension with particle size ranging from 6 nm to 90 nm.
A Facile, “Green” One – Step, Room Temperature Synthesis of a Series of monodispersed MSe(M = Cd or Zn) Water Dispersible Nanoparticles
Authors: Oluwafemi Oluwatobi S. , Revaprasadu Neerish 
Published: August 2010

AbstractWe herein report a facile, ‘green’ one- step synthesis of a series of monodispersed water-soluble selenide nanoparticles at room temperature. The capping ligands used include, cysteine, methionine, ascorbic acid and starch which function as agents of solubilisation, stabilization and conjugation sites for biomolecules. The synthetic approach involves the addition of an appropriate volume of selenide ion produced via the reduction of selenium powder in water to an aqueous solution containing the ligand- metal salt (MCl2 M = Zn or Cd). Optical spectroscopy shows that the particles are of high quality while the transmission electron microscopy (TEM) of the samples shows variation in shapes ranging from dots to rods of high and low aspect ratios.
Structural, Optical and Electrical Properties of InGaN Sputtered Thin Films
Authors: Ebdah Mohammad Ahmad , Hoy Daniel R. , Kordesch Martin E. 
Published: August 2010

ABSTRACTInGaN films were successfully fabricated using radio frequency (RF) magnetron sputtering technique with a sputtering target of pure In and Ga metal alloys under a flow of nitrogen. Films were deposited on quartz substrates, with the ratio of In to Ga varied from 0.46 to 0.85 in the alloys. The structures and compositions have been studied using X-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDX), respectively. Multiple crystallographic phases have been observed indicating phase segregation and inhomogeneous distribution of the metal compositions in the films. The existence of wurtzite structures has been observed in all samples, with the In percentage (y) in a crystalline phase calculated from the XRD being less than the total In percentage (x) in each film as determined by the EDX spectroscopy. The (0002) orientation has been observed in all films, and the (10-11) orientation has been observed for x = 0.46 and 0.70 only. The optical transmission and absorbance of the films were studied by the spectrophotometry technique, which indicate that the dominant phases in all samples are amorphous. Consequently, the corresponding optical bandgaps have been characterized. Hall Effect measurements were made in 0.55 T magnetic field at room temperature to characterize the electrical conductivity, free carrier concentration, and mobility.
High-temperature Fiber Matrix Composites for Reduction of Radiation Heat Transfer
Authors: Shklover Valery , Braginsky Leonid , Mishrikey Matthew , Hafner Christian 
Published: August 2010

AbstractRecent progress in fabrication technology allows for the efficient control of electromagnetic waves by means of photonic devices. This could be attractive and promising also for high-temperature photonic structures to control electromagnetic heat transfer at temperatures above 1000 oC. We discuss the literature and present our own results on Fiber Matrix Composites (FMC), which could be superior to high-temperature metals or monolithic ceramics and can be designed for photonic applications. Possible applications include the protection of non-rotating components in high-temperature engines and turbines such as combustors and liners, coatings and parts for aerospace vehicles. Our discussion includes the material aspect and some relevant structure features. The use of woven fabrics to design new photonic band gap structures is discussed. An example of the use of the plane-wave expansion method for FMC design is given.
Chemically and Electrochemically Deposited Thin Films of Tin Sulfide for Photovoltaic Structures
Authors: Mathews Nini Rose 
Published: August 2010

AbstractThin films of tin sulfide (SnS) were deposited on TCO-coated glass substrates by pulse electrodeposition. Cyclic voltammetry showed that SnS deposition occurs in the -0.8 V to −1 V range. The films deposited using the potential pulses of -0.95V (Von) and +0.1V (Voff) are of orthorhombic crystal structure with lattice parameters and grain size similar to those of the thin films of orthorhombic structure obtained by chemical deposition. The optical band gap of the films was 1.3 eV. In CdS/SnS heterojunctions an open circuit voltage110 mV, short circuit current density 0.72 mA/cm2 and fill factor of 0.32 are reported here.
RF Sputter Deposition of Indium Oxide / Indium Iron Oxide Thin Films for Photoelectrochemical Hydrogen Production
Authors: Ingler William B , Naseem Abbasali 
Published: August 2010

AbstractThis project focuses on using indium oxide and indium iron oxide as an alloy to make a protective thin film (transparent, conductive, and corrosion resistant or TCCR) for amorphous silicon based solar cells, which are used in immersion-type photoelectrochemical cells for hydrogen production. From the work completed, the results indicate that samples made at 250 °C with 30 Watt of indium and 100 Watt of indium iron oxide, and a sputter deposition time of ninety minutes produced optimal results when deposited directly on single junction amorphous silicon solar cells. At 0.65 Volts, the best sample displays a maximum current density of 21.4 mA/cm2.
Effective Excitation of Superfocusing Surface Plasmons using Phase Controlled Waveguide Modes
Authors: Yamamoto Kazuhiro , Kurihara Kazuyoshi , Takahara Junichi , Otomo Akira 
Published: August 2010

AbstractWe propose more practical method to realize the superfocusing modes based on waveguide structures, and present a numerical analysis these structures using the finite-difference time-domain (FDTD) simulations. For metallic wedged structure coupled to dielectric waveguides, we investigate a method of controlling superfocusing by changing the phase of waveguide modes.
UV Raman Spectroscopy Study of Strain Induced by Buried Silicon Nitride Layer in the BOX of Silicon On Insulator Substrates
Authors: Paillard Vincent , Groenen Jesse , Puech Pascal , Lamrani Younes , Kostrzewa Marek , Widiez Julie , Barbé Jean-Charles , Deguet Chrystel , Clavelier Laurent , Ghyselen Bruno 
Published: August 2010

AbstractCompressive strained Silicon from a Silicon on Insulator (SOI) substrate is obtained by replacing the buried oxide layer by a strained silicon nitride layer. The silicon overlayer and the buried dielectric are etched down to the substrate to form narrow wires (down to 300 nm wide). The Si overlayer is then expected to acquire compressive strain thanks to the relaxation of the SiN layer. The goal is to obtain a high uniaxial stress perpendicular to the wires. The structures and the strain are modeled using finite element simulations. The strain elements are used to calculate Raman spectra. Theoretical results are compared to experimental profiles deduced from resonant (UV) micro Raman experiments.
Measuring the glass-transition temperature in electrospun polyvinyl alcohol fibers using AFM nanomechanical bending tests
Authors: Wang Wei , Barber Asa H. 
Published: August 2010

AbstractThe glass transition of individual electrospun PVA fibers was found using an AFM fiber bending technique within a heated chamber. A considerably loss in the measured elastic modulus was observed with temperature when the glass transition temperature was reached. The glass transition temperature was observed to decrease as the electrospun PVA fiber diameter decreased, indicating diameter dependent enhanced polymer chain mobility.
Mechanical Principles of a Self-Similar Hierarchical Structure
Authors: Gao Huajian 
Published: August 2010

AbstractNatural materials such as bone, shell, tendon and the attachment system of gecko exhibit multi-scale hierarchical structures. Here we summarize some recent studies on an idealized self-similar hierarchical model of bone and bone-like materials, and discuss mechanical principles of self-similar hierarchy, in particular to show how the characteristic length, aspect ratio and density at each hierarchical level can be selected to achieve flaw tolerance and superior stiffness and toughness across scale.
Tel.: (401) 863-2626; Email address:
Architectured Structural Materials: A Parallel Between Nature and Engineering
Authors: Dunlop John W.C. , Brechet Yves J.M. 
Published: August 2010

AbstractNature builds materials like an architect to obtain a variety of properties with a limited number of building blocks. In contrast, engineers have access to a wide range of constituent materials to fulfil a variety of requirements. The classical degrees of freedom for controlling the properties of man-made materials are the microstructure, or the macroscopic shape. Only recently, the architecture at the millimetre scale was perceived as an efficient way of expanding the range of properties offered by bulk materials. The aim of this paper is to compare the different strategies and to outline some observations on natural materials which may serve as inspiration to develop engineering architectured materials.
Channel Strain Analysis in Damascene-gate pMOSFETs on Si (100) and (110) Substrate by Conventional and Cross-sectional Raman Spectroscopy
Authors: Takei Munehisa , Kosemura Daisuke , Nagata Kohki , Akamatsu Hiroaki , Mayuzumi Satoru , Yamakawa Shinya , Wakabayashi Hitoshi , Ogura Atsushi 
Published: August 2010

AbstractChannel strain in damascene gate pMOSFETs with compressive stress liner (c-SL) and embedded SiGe (eSiGe) were studied by micro-Raman spectroscopy with a quasi-line-shape UV excitation (λ=363.8nm). The channel strain profiles were obtained by the conventional mea-surement from the surface after dummy gate removal. The compressive strains at the channel edges were larger than that at the channel center for the relatively long gate length (Lgate). As the Lgate became smaller, although it became hard to recognize the strain profile, the compres-sive strain at the channel center increased by the superposition of the strain at the channel edges. However, channel strain disappeared in the measurement data for the channel length less than 160 nm. Thus, we extended the laser exposure time from 10 to 40 minutes to extract the channel strain component from obtained Raman spectra. The Raman peaks consisted of two or three peaks for the Lgate less than 160 nm. By multi peak fitting, we have succeeded in measuring the extremely large stress of - 2.4 GPa in the channel of Lgate = 30 nm pMOSFET. We also per-formed the cross-sectional measurements for the samples before and after metal-gate/high-k gate stack formation. Channel strain profiles were obtained similar to those by the conventional mea-surement. Extremely high device performance can be clearly explained by the compressive stress derived from the Raman measurements both in the Lgate dependence and eSiGe effect. We also demonstrated that Raman spectroscopy using cross-sectional measurement can evaluate the channel strain even in the MOSFETs after gate stack formation.
Relationships between Interface Structures and Electrical Properties in the High-k/III–V System
Authors: Yasuda Tetsuji , Miyata Noriyuki , Urabe Yuji , Ishii Hiroyuki , Itatani Taro , Takagi Hideki , Yamada Hisashi , Fukuhara Noboru , Hata Masahiko , Ohtake Akihiro , Yokoyama Masafumi , Hoshii Takuya , Haimoto Takashi , Deura Momoko , Sugiyama Masakazu , Takenaka Mitsuru , Takagi Shinichi 
Published: August 2010

AbstractIntegration of the III–V channel MISFETs on the Si platform is a potential solution to realize performance improvement and power reduction in the sub-22 nm node and beyond. To take advantage of the high electron mobility of III-Vs, the MIS interfaces of high integrity should be developed. This paper reports how the MIS characteristics vary in response to the changes in the interface composition and structures, and discusses the physics and chemistry behind these observations. We fabricated a wide variety of the high-k/III–V interface structures by employing the state-of-the-art technologies of the epitaxial wafers by MOCVD, surface reconstruction control in the MBE environment, wet/dry surface treatments optimized by utilizing XPS/AES analyses, and deposition of quality dielectrics (Al2O3, HfO2) by ALD and EB evaporation. The MIS characteristics were evaluated in the capacitor and FET structures. The talk will include the following topics: the effects of the cation composition (Al, Ga, In) of the III-V bulk on the MIS characteristics [1], the importance of the anion control (N, S) at the interface to improve the MIS characteristics, and the surface orientation ((100) vs. (111)) as a new parameter in the III-V MIS device design [1]. This work was carried out in the Nanoelectronics Project supported by NEDO/METI. [1] T. Yasuda et al., as discussed at 39th IEEE SISC (San Diego, Dec. 2008).
Stretchable Silicon Electronics and Their Integration with Rubber, Plastic, Paper, Vinyl, Leather and Fabric Substrates
Authors: Kim Dae-Hyeong , Kim Yun-Soung , Liu Zhuangjian , Song Jizhou , Kim Hoon-Sik , Huang Yonggang , Rogers John 
Published: August 2010

AbstractElectronic systems that offer elastic mechanical responses to high strain deformations are of growing interest, due to their ability to enable new electrical, optical and biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This talk describes materials and mechanical design strategies for classes of electronic circuits that offer extremely high flexibility and stretchability over large area, enabling them to accommodate even demanding deformation modes, such as twisting and linear stretching to ‘rubber-band’ levels of strain over 100%. The use of printed single crystalline silicon nanomaterials for the semiconductor provides performance in flexible and stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators and differential amplifiers, suggest a valuable route to high performance stretchable electronics that can be integrated with nearly arbitrary substrates. We show examples ranging from plastic and rubber, to vinyl, leather and paper, with capability for large area coverage.