bluuebunny/crossref_metadata_2025_split huggingface dataset:
Jet Vapor Deposition of Transparent Conductive ZnO:Al Thin Films for Photovoltaic Applications
Authors: Han H. , Zhang J.-Z. , Halpern B. L. , Schmitt J. J. , Cueto J. Del 
Published: April 2011

AbstractA novel, proprietary, and general approach to depositing thin films and coatings, The novel Jet Vapor Deposition TM (JVDTM) process is described, in which single or multiple “jets in low vacuum” are coupled with “mobile substrates” to generate a wide range of multicomponent, multilayer and “host-guest” thin films and coatings. Highly transparent and conducting aluminum-doped ZnO (ZnO:A1) thin films have been deposited at room temperature on glass slide, flexible polymer and thin film PV coated substrates by the JVDTM process. The thin films obtained from the optimized operating conditions have an average transmittance of about 85% in the visible range and electrical resistivities of 7 to 10×10-4 Ω-cm. Proper control of substrate bias, dopant content, deposition rate, and oxygen to metal ratio are the keys to depositing low resistivity and high transparency thin films.
Reversible Changes in the Electronic and Optical Properties of Micro-Crystalline ln2O 3-x: A Comparison with Amorphous In2O3-x
Authors: Pashmakov B. , Fritzsche H. , Claflin B. 
Published: April 2011

AbstractThe electrical conductance and optical absorption coefficient of microcrystalline indium oxide (c – In2 O 3-x ) can be changed reversibly by several orders of magnitude by photoreduction and reoxidation. Photoreduction is achieved by exposure to ultraviolet light hv ≥ 3.5eV in vacuum or an inert gas. The effects are similar to those previously observed in amorphous In2 O3-x
Spectrally Resolved Fill Factor Measurements on a-Si:H Based Solar Cell Structures
Authors: Wagner Michael , Peros Dimitrios , Guse Stephan , Böhm Markus 
Published: April 2011

AbstractThis work presents essential differences in the fill factors (FF) of pin and nip solar cell structures based on hydrogenated amorphous silicon (a-Si:H). The nomenclature “pin’ (‘nip’ respectively) determines the deposition sequence of the single layers. Fill factor measurements are carried out with illumination through p- and n-layers at different wavelengths. The use of laser light provides a wide range of illumination levels and photo current densities of up to 14mA/cm2. The spectrally resolved FF measurements indicate an incorporation of dopants in the i-layer depending on the layer deposited first. Nip and pin structures generally show opposite FF dispersion when illuminated through the same layer. However, due to the slight n-conductivity of intrinsic a-Si:H material, a weak boron incorporation leads to a net charge compensation in the ilayer. In contrast to other investigations we do not find a significant deviation in the open circuit voltages of the pin and nip devices as long as the deposition parameters of the single layers are identical.
a-Si/c-Si Solar Cells: Effect of Preparation and Processing Techniques on the Photovoltaic Properties
Authors: Jagannathan B. , Anderson W. A. 
Published: April 2011

AbstractThe photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/ p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge deposition of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 μm thick a-Si layer. This also resulted in an improved spectral response of the solar cell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area ∼ 0.24 cm2) yielded about 9.5 % efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.
Electromigration in VlSI Metallization Test Structures Stressed Over a Range Of DC Pulse Conditions and Frequencies up to 133 MHz
Authors: Malone D. W. , Hummel R. E. 
Published: April 2011

AbstractElectrical resistance data were gathered from AI(Cu) VLSI metallization test structures during pulsed DC current stressing (15 mA peak) at elevated temperature (200 °C). Duty cycles of 50%, 67%, and 80% were applied at a frequency (repetition rate) of 133 MHz. Also, a duty cycle of 50% was applied at frequencies of 100 KHz, I MHz, and 133 MHz. The resistance-to-starting resistance ratio, R/Ro, was logged over time, and the data were used to extract the median time dependence of the resistance change. This, in effect, reveals the dependence of the median “failure” time on the R/Ro (or ΔR/Ro) criterion. An “enhancement factor” was defined as the ratio of the median “failure” time from a given pulsed test to that from a DC test with the same peak current. A weak dependence of this enhancement factor on R/Ro was found in the range examined. The degree of enhancement corresponds more closely to the average current density prediction than to the on-time prediction, although there is some small variation according to duty cycle and frequency.
Electromigration Damage Studied by 1/f Noise
Authors: Dagge K. 
Published: April 2011

AbstractThin polycrystalline aluminum films were investigated by high-resolution ac noisemeasurements before and after damaging by high direct current. Immediately after the interruption of the dc-stress a transient noise component was observed that was inversely proportional to the square of the frequency f (1/f2 -noise). It was caused by discrete jumps in the resistance presumably due to the relaxation of mechanical stress. The second component of noise was stable and in all cases approximately proportional to 1/f. The spectral density of 1/f-noise showed characteristic discrete steps as a function of damaging time, in contrast to the resistance which increased almost continuously up to the failure of the film. This indicates that nucleation-and-growth processes of mobile defects were observed in the noise measurements. Thus noise measurements might help to understand the microscopic process of electromigration.
1/f Noise in the Tunneling Current of thin Gate Oxides
Authors: Alers G. B. , Monroe D. , Krisch K. S. , Weir B. E. , Chang A. M. 
Published: April 2011

AbstractWe have observed fluctuations in the tunneling current through 3.5 nm gate oxides with a 1/f power spectrum where f is the frequency. For voltages in the direct tunneling regime we lind an anomalous current dependence of the noise relative to previous observations of noise in thin oxides. We present a simplified model for the current noise in terms of fluctuations in a trap assisted tunneling current that exists in the oxide in addition to the direct tunneling current. Current noise appears to be a very sensitive probe of trap assisted tunneling and degradation in oxides.
New Insights Into Oxide Trapped Holes And Other Defects: Implications For Reliability Studies
Authors: Oldham Timothy R. , Lelis Aivars J. 
Published: April 2011

AbstractNew insights into the nature of oxide trapped holes and other defects have been gained from ionizing radiation studies. Specifically, connections have been established between hole traps and neutral traps. The nature of the defects, how they are related to each other, and their implications for reliability studies will be discussed.
Effect of Nitrogen Diffusion in Ti and TiTiN Films for Future DRAM Bit Line Interconnects and Plugs
Authors: Drynan John M. , Koyama Kuniaki 
Published: April 2011

AbstractThe effects of nitrogen diffusion from both N2 gas phase and TiN solid phase sources on the characteristics of Ti/TiN bilayer and TiN/Ti/TiN trilayer films have been investigated in terms of both materials properties such as resistance, coloration, composition, and crystallinity, and prospective applications such as for DRAM bit line interconnections and contact-hole plugs. Using blank films it has been found, in coincidence with other work, that at the onset of N diffusion and hence low N concentrations within a Ti film, the sheet resistance increases and the Ti layer becomes a solid solution of N in hexagonal Ti. As the concentration increases, the sheet resistance reaches a maximum, after which it decreases abruptly and the structure becomes primarily tetragonal Ti2N phase. At higher concentrations the resistance stabilizes or increases slightly and the structure becomes more cubic TiN phase. Sheet resistances calculated from resistance measurements of Ti and TiN mono- and multilayer conductor lines with and without RTN and RTAr thermal treatments have shown that the conductor lines exhibit similar behavior to the blank films. In comparison with the mon-olayer lines, the multilayer ones are generally lower in resistance and more stable over a wider range of post-deposition process temperatures.
Post Metallization Damage Recovery Using Rapid Thermal Processing (RTP)
Authors: Thakur R. P. S. , Gonz´lez F. , DeBoer S. 
Published: April 2011

AbstractFurnace annealing after plasma processing and other process steps such as implantation and contact formation in advanced CMOS processing are extensively used to improve the overall device characteristics. With an ever emerging trend towards lower thermal budget processing and the unique capabilities of RTP to provide that along with flexibility to change process ambients, we present the results of our experiments to do low temperature mixed gas and pure hydrogen anneals in RTP and study its effects on junction leakage and transistor characteristics.Recently, with the advent of the contact plug technology, the sintering function is not as important as the alloy effect on the transistor and junction device parameters. Therefore, the requirements for the alloy are more related to threshold voltage, (Vt) uniformity and reduced junction leakage. The key is that the hydrogen atoms diffuse far into the silicon to reach the dangling bonds at the field edge and by the transistors. The hydrogen rapid thermal processor (HRTP) can accomplish the basic device annealing function as long as there is sufficient time for hydrogen diffusion and reaction time. The aluminum metallization limits the temperature to 500°C due to increased metal roughness and increased metal resistance. Also, the hotter temperatures compete in the reaction by breaking hydrogen bonds as well as satisfying the dangling silicon bonds. The best ambient gas was at 100% hydrogen flow at low pressure with HRTP times in excess of one minute.
Rapid Thermal Oxidation of Silicon in Mixtures of Oxygen and Nitrous Oxide
Authors: Grant John M. , Karim Zia 
Published: April 2011

AbstractOxidation in nitrous oxide by conventional hot wall furnace processing and by rapid thermnal oxidation (RTO) has been a subject of much interest in recent years. RTO is a fundamentally different process than furnace oxidation, however, and the full effects of this type of processing on the oxidation kinetics are not well understood. Oxidation of silicon by RTO at a variety of pressures, temperatures, and oxidation gas mixtures has been studied. Although at lower temperatures (<850°C) the atmospheric pressure oxidation rate in nitrous oxide is very close to that in oxygen, at higher temperatures the oxidation rate in nitrous oxide is much lower than that in oxygen. At lower pressures in a RTO process, the oxidation rate in nitrous oxide is higher than that in oxygen. The effect of the nitrogen incorporated in the oxide acting as a diffusion barrier has been proposed as the mechanism of temperature dependence for atmospheric pressure oxidation in nitrous oxide. This does not explain the effects seen at lower pressures, however. We propose that some of the intermediate species produced in the decomposition of nitrous oxide into molecular nitrogen, molecular oxygen, and nitric oxide play a role in the initial stages of oxidation by RTO in nitrous oxide.
The Role of Thermal Radiative Properties of Semiconductor Wafers in Rapid Thermal Processing
Authors: Timans P. J. 
Published: April 2011

AbstractRapid thermal processing (RTP) has become a key technology in the fabrication of advanced semiconductor devices. As RTP becomes the accepted technique for an increasingly wide range of processes in device fabrication, the understanding of the basic physics of radiation heat transfer in RTP systems is also being extended rapidly. This paper illustrates the use of optical models for prediction of the thermal radiative properties of semiconductor wafers. Such calculations can be used to address many of the key issues of interest in RTP, including questions concerning temperature measurement and process repeatability.
Selective Deposition of Silicon and Silicon-Germanium Alloys by Rapid Thermal Chemical Vapor Deposition
Authors: Grant John M. , Ang Ming , Allen Lynn R. 
Published: April 2011

AbstractSelective deposition of SiGe alloys by rapid thermal deposition has been studied using a commercially available Rapid Thermal Chemical Vapor Deposition (RTCVD) cluster tool. The precursors used in this work were dichlorosilane and germane diluted in either hydrogen or argon. An initial characterization was performed to find the appropriate temperature and GeH4 flow ranges to deposit epitaxial layers with low surface roughness. For layers with higher germanium concentration lower deposition temperatures are required to minimize surface roughness. The effects of the dilutant gas on the deposition were examined. An H2 dilutant affects the deposition by consuming chlorine released by the SiCl2H2 and forming HCI. When Ar is used as the dilutant, more chlorine is available for other reactions that can result in etching of the silicon surface. Finally, the effects of pre-deposition treatment were determined. When compared to a wet HF dip, a gas/vapor phase HF/methanol native oxide removal treatment appears to increase the initiation time for the epitaxial deposition reaction. This is most likely due to increased fluorine termination of the surface. When a wet HF or HF/methanol native oxide removal is followed by a UV-Cl2 process, the deposition reaction initiation time is reduced. The UV-Cl2 process was also found to etch silicon through the native oxide.
Integrated Two-Stage Processing of Microcrystalline Silicon Thin Films on SiO2 and Glass
Authors: Wolfe D. , Wang F. , Lucovsky G. 
Published: April 2011

AbstractA novel two-stage low temperature plasma assisted deposition process, which separates interface formation from bulk film growth, was investigated for deposition of in-situ phosphorous doped microcrystalline silicon (μc-Si) thin films on SiO2 and glass substrates. We find that the bulk layer microstructure, as characterized by reflection high energy electron diffraction and Raman scattering spectroscopy, is the same whether or not a buffer layer is used. However, we find significant differences in the room temperature dark conductivity, and the dark conductivity activation energies.
Spanish Activities (Research and Industrial Applications) in the Field of Microwave Material Treatment
Authors: Civera José Manuel Catalá , Davó Elías De los Reyes 
Published: April 2011

AbstractThe GCM (Microwave Heating Group) within the Communications Department at the Technical University of Valencia is dedicated to the study of microwaves and their use in the current industrial processes in the Valencian Community and in Spain. To this end, a microwave heating laboratory has been developed and the benefits of incorporating microwave technologies into current industrial processes have been demonstrated. In this paper some of the industrial applications which are being investigated are presented.
Microwave Heating of Ceramic Laminates
Authors: Pelesko J. A. , Kriegsmann G. A. 
Published: April 2011

AbstractThe microwave heating of a ceramic laminate composed of three layers is modeled arid analyzed. Two materials with widely disparate effective electrical conductivity's comprise the laminate. The ratio of the these conductivities is exploited as a small parameter in the development of an asymptotic theory. Two physically distinct situations are considered. In the first, a low-loss ceramic is surrounded by lossy material. In the second situation, a lossy material is surrounded by a low-loss material. The results are physically interpreted to attain insight into the dynamics and parameter dependence of the microwave heating of ceramic laminates.
Investigations of Microwave Absorption in Insulating Dielectric Ionic Crystals Including the Role of Point Defects and Dislocations
Authors: Klein Benjamin D.B. , Meng Binshen , Freeman Samuel A. , Booske John H. , Cooper Reid F. 
Published: April 2011

AbstractA theoretical model of microwave absorption in linear dielectric (non-ferroelectric) ionic crystals that takes into account the presence of point defects was synthesized and verified using NaCl single crystals. In the next stage of this research, we will introduce a controlled density of dislocations into the single crystal NaCl samples and study the effect on the microwave absorption mechanisms (ionic conduction, dielectric relaxation and multi-phonon processes) both theoretically and experimentally. Qualitative outlines of this modified theory are presented. The loss factor ε’ has been measured in the dislocation-free case by a cavity resonator insertion technique and the experimental results are in good agreement with the theoretical model. We describe the sample preparation technique that will be used to produce a controlled dislocation density in single crystal samples that will also be studied in our cavity resonator insertion system.
Microwave Effects on Spinodal Decomposition
Authors: Willert-Porada M. 
Published: April 2011

AbstractMicrostructural differences between microwave and conventionally annealed solid solution TiO2-SnO2 and TiO2-SnO2-(Al2O3)0,02-samples demixed by spinodal decomposition are reported. The decomposition is retarded upon microwave annealing as compared to conventional heat treatment. This result is in accordance with theoretical predictions, if a superposition of the microwave field with an internal periodic electrostatic potential resulting from kinetic effects is assumed.
Window Encapsulation in Car Industry by Using the 50 Ω RF Technology
Authors: Bernard J. P. , Barboteau Mr. , Collet L. 
Published: April 2011

AbstractThroughout the world car industry has been using window encapsulation for a few years now. This technology is mainly used in production lines and is called RIM for polyurethane reaction injection moulding.This technology, however brings about some problems such as:– glass breaking during mould closure,– high production cost,– systematic rough edges.The PSA Group (Peugeot-Citroën), a pioneer in this field, in collaboration with SAIREM has launched a new innovating process for window encapsulation by using the 50 Ω RF technology for gelling PVC Plastisol.The study was followed by an industrial prototype. Industrial equipment was then installed at WEBASTO HEULIEZ for window encapsulation of the sunshine roof for the Citroën Xantia.The authors describe the principle of window encapsulation and the different existing processes. He describes the 50 ΩRF technology, an industrial installation and the constraints of this technology in order to get maximum efficiency.In the conclusion they present a technical and economical analysis of the different solutions for window encapsulation. They also present the advantages of the 50 Ω RF technology and the new opportunities it offers.In the conclusion they present a technical and economical analysis of the different solutions for window encapsulation. They also present the advantages of the 50 Ω RF technology and the new opportunities it offers.
Microwave Sintering of Tungsten Carbide Cobalt Hardmetals
Authors: Gerdes T. , Willert-Porada M. , Rödiger K. 
Published: April 2011

AbstractThe variety of possible microstructures obtained upon microwave sintering of hardmetals is described with regard to microwave specific heating mechanisms. While the reduction of processing time and temperature is evident, the influence of the microwave sintering process on the microstructure is not fully understood. From microwave sintering experiments at different power levels processes that depends on the local field strength are identified. The mechanical properties of microwave sintered tool bits are compared with commercial WC-Co hardmetals. An incising wear resistance of MW-sintered hardmetals for speed turning of cast iron is found.
Statistical Comparative Analyses of Engineering Properties of Microwave and Conventionally Sintered Alumina
Authors: Binger K. R. , Freeman S. A. , Grellinger D. J. , Cooper R. F. , Booske J. H. 
Published: April 2011

AbstractProcessing conditions such as temperature, soak time, and heating rate affect the final density of conventionally-sintered and microwave-sintered ceramics. Of additional importance is the question of whether microwave-sintered ceramics display intrinsically superior macroscopic engineering properties compared with conventionally-sintered control specimens. An analysis using the Yates algorithm indicates that the processing condition which has the largest impact on the density of the specimen is the heating method (microwave vs. conventional). The microwave-sintered specimens resulted in higher densities and higher fracture strengths. However, it was determined that the higher fracture strengths were due to the higher sintered densities rather than a significantly different microstructure.
Temperature Distribution in a Flowing Fluid Heated in a Microwave Resonant Cavity
Authors: Thomas J. R. , Nelson Eric M. , Kares Robert J. , Stringfield Ray M. 
Published: April 2011

AbstractThis paper presents results of an analytical study of microwave heating of a fluid flowing through a tube situated along the axis of a cylindrical microwave applicator. The interaction of the microwave field pattern and the fluid velocity profiles is illustrated for both laminar and turbulent flow. Resulting temperature profiles are compared with those generated by conventional heating through a surface heat flux. It is found that microwave heating offers several advantages over conventional heating.
An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV
Authors: Morris S. J. , Obradovic B. , Yang S. -H. , Tasch A. F. , Rubin L. 
Published: April 2011

AbstractAn electronic stopping power model for boron, arsenic, and phosphorus ion implantation into single-crystal Si is reported over the energy range fr'om a few keV to several MeV, for both offand on-axis implant angles relative to the <100> crystallographic direction. Combined with previously developed models for damage accumulation, this model allows physically-based simulation of 3-D profiles over an extremely wide range of implant conditions. In particular, this allows modeling of MeV implants which are being used more and more frequently.