bluuebunny/crossref_metadata_2025_split huggingface dataset:
Germanium & Carbon Co-implantation for Enhanced Short Channel Effect Control in PMOS Devices
Authors: Dumont Benjamin , Pouydebasque Arnaud , Pawlak Bartek , Oudet Benjamin , Delille Dominique , Milesi Frederic , Souifi Kader , Skotnicki Thomas 
Published: April 2011

AbstractThis work demonstrates the efficiency of a Germanium and Carbon co-implantation that suppresses the Boron Transient Enhanced Diffusion, enhances Boron activation and enables large improvement of Short Channel Effects in PMOS devices while maintaining drive current performances. We present here 65/45nm node devices on conventional bulk substrates featuring Germanium and Carbon engineered shallow junctions that enable to reduce the Drain Induced Barrier Lowering compared to devices implanted only with Boron. This improvement is attributed to the suppression of Boron channelling with Ge pre-amorphization (PAI), and to the reduction of Boron TED due to the trapping of interstitial defects by Carbon with Germanium PAI.
Defect Evolution During Laser Annealing
Authors: Felch Susan B. , Mayur Abhilash , Parihar Vijay , Nouri Faran , Jones Kevin S. , Zeenberg Daniel E. , Jones Britta E. 
Published: April 2011

AbstractImplementation of millisecond annealing requires the identification of the operating conditions for that technique which minimize the residual defects. In addition, possible combinations of low temperature annealing with millisecond annealing could result in minimal residual defects. The samples studied here were implanted with Ge+ pre-amorphization and boron dopant ions and were activated with a scanning laser annealing technique with maximum temperature dwell times of about one millisecond. The laser anneal conditions were varied, along with combinations of spike anneals. The annealed samples were analyzed by plan-view transmission electron microscopy (TEM) to measure the residual defect density and size. The effects of spike temperature, laser annealing temperature, and scan rate will be discussed.
Physical Modeling of Defects, Dopant Activation and Diffusion in Aggressively Scaled Bulk and SOI Devices: Atomistic and Continuum Approaches
Authors: Moroz Victor , Martin-Bragado Ignacio 
Published: April 2011

AbstractIn this overview we examine how advanced continuum and atomistic modeling can help to understand and resolve process and device design issues for the 65 nm technology generation and beyond. The following implantation-related issues are reviewed: wafer temperature for different types of implant equipment and its impact on defect formation and amorphization, ion scattering off the photoresist mask and its impact on threshold voltage variation, dual rotation halo implant instead of the conventional quad rotation halo implant, and engineering of the source/drain junction overlap for diffusionless annealing by using tilted implants. The following annealing-related issues are also considered: limitations of spike anneal; benefits of cocktail junctions, heat transfer mechanisms for spike and millisecond annealing, and implant damage evolution for different thermal budgets. Taken together, implant, annealing, and layout conditions are shown to explain observed threshold voltage and transistor performance variations. In addition, the effects of transistor geometry on dopant diffusion, activation, and defect formation are shown for several generations of bulk and FDSOI MOSFETs.
Structure and Process Parameter Optimization for Sub-10nm Gate Length Fully Depleted N-Type SOI MOSFETs by TCAD Modeling and Simulation
Authors: Jin Yawei , Ma Lei , Zeng Chang , Dandu Krishnanshu , Barlage Doug William 
Published: April 2011

AbstractAccording to most recent 2004 International Technology Roadmap for Semiconductor (2004 ITRS), the high performance (HP) MOSFET physical gate length will be scaled to 9nm (22nm technology node) in 2016. We investigate the manufacturability of this sub-10nm gate length fully depleted SOI MOSFET by TCAD simulation. The commercial device simulator ISE TCAD is used. While it is impractical for experiments currently, this study can be used to project performance goals for aggressively scaled devices. In this paper, we will optimize different structure and process parameters at this gate length, such as body thickness, oxide thickness, spacer width, source/drain doping concentration, source/drain doping abruptness, channel doping concentration etc. The sensitivity of device electrical parameters, such as Ion, Ioff, DIBL, Sub-threshold Swing, threshold voltage, trans-conductance etc, to physical variations will be considered. The main objective of this study is to identify the key design issues for sub-10nm gate length Silicon based fully depleted MOSFET at the end of the ITRS. The paper will present the final optimized device structure and optimized performance will be reported.
BCl3/N2 Plasma for Advanced non-Si Gate Patterning
Authors: Shamiryan Denis , Paraschiv Vasile , Eslava-Fernandez Salvador , Demand Marc , Baklanov Mikhail , Boullart Werner 
Published: April 2011

AbstractAs conventional materials in CMOS manufacturing, Si as a gate material and SiO2 as a gate dielectric, approach their performance limit, the search for new materials becomes key point. Patterning of the new stacks containing these materials require both new plasma etch chemistries and new approaches.We propose a BCl3/N2 based plasma mixture for the advanced gate patterning (in this case pure Ge gates and TaN metal gates). There are three reasons to select this combination:a) The gas mixture generates Cl* species able to etch a diversity of materials, b) it is selective towards Si due to formation of passivating Si-B bonds and c) it improves profile control possibly by formation of a passivating BN-like film on feature side walls. It was found that BCl3 in presence of N2 results in a film deposition if no bias is applied to the substrate (i.e. there is no ion bombardment). The film is hexagonal BN-like since the characteristic peaks corresponding to the in-plane B-N and out-of-plane B-N-B bonds were found in FTIR spectra. The composition of the film surface as found by XPS is B, N and O (as no O2 is present in the plasma it may be a result of oxidation in the atmosphere), the amount of Cl is approx. 1%. The film is soluble in water that makes its removal easy. The deposition rate can be as high as 300 nm/min depending on plasma power, pressure, flow rates and BCl3 to N2 ratio.We propose to use the BCl3/N2 mixture to etch materials too sensitive to Cl-based plasma. Pure BCl3 plasma might distort gate profiles, as materials are etched in a lateral direction as well, this is the case, e.g. for pure Ge gates. Addition of small amount of nitrogen (5% to 10%) to the BCl3 plasma preserves the vertical profile, apparently by the formation of a passivating BN-like layer on the vertical surfaces where there is no ion bombardment. Too high nitrogen concentration results in positively sloped gate profile or even in the etch stop that could be attributed to the too high deposition rate that exceeds the etch rate. All experiments have been performed in Lam Versys 2300 etch chamber.
Layer Transfer of Hydrogen-Implanted Silicon Wafers by Thermal-Microwave Co-Activation
Authors: Yang Y. Y. , Huang C. H. , Hsu Y. -K. , Jeng S. -J. , Tai C. -C. , Lee S. , Chen H. -W. , Gan Q. , Chu C. -S. , Ting J. -H. , Lai C. S. , Lee T. -H. 
Published: April 2011

AbstractSilicon on insulator (SOI) substrate is a key materials for nano-scaling IC device and the requirement for its crystal structure and quality is really high. Nanothick silicon thin film can be transferred onto a handle wafer from a donation wafer to form a SOI wafer after this process including hydrogen implantation of donation wafer, wafer bonding, and thermal treatment at moderately high temperatures of 400 to 600 degree centigrade. The expansion of the hydrogen molecular evolving from the implanted hydrogen ions interacting with silicon dangling bonds and trapped inside the microcavities located near the ion projected range resulted in exfoliation of the silicon thin film in the final heating step. The hydrogen molecules inside the microcavities tend to expand along the bonded interface rather than radially to form individual blisters. Finally, the fracture failure of ion implanted area parallel to the bonded interface near the projected ion range is formed by the sideway expansion of the cavities due to the diffusion supply of implanted hydrogen excited by thermal energy. Microwave processing can lower the activity energy to speed the chemical reaction so that it leads the format of microcavities occurring at low temperature by directly exciting the implanted hydrogen ions by microwave energy and also results in decreasing the critical dosage for layer splitting. However, microwave irradiation alone at room temperature causes the formation of lots of nucleus sites of micro-voids filled by hydrogen molecule which is immobility in silicon resulting in the issue of uniformity of transferred layer. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at low temperature (200 degree centigrade) rather than microwave alone to co-activate the implanted hydrogen ions in silicon to increase not only kinetic energy but also mobility to successfully achieve a completely transferred layer in a short time.
Moisture Induced Degradation of Porous Low-k Materials
Authors: Baklanov Mikhail , O'Dwyer David , Urbanowicz Adam M , Le Quoc Toan , Demuynck Steven , Hong Eun Kee 
Published: April 2011

AbstractInteraction of moisture with porous low-k films is evaluated by using in situ ellipsometry setup. The adsorbed water amount is calculated from change of refractive index measured during the adsorption. Pristine low-k films reversibly adsorb 2 - 5% of water that reflects presence of constitutive hydrophilic centrums. Plasma and thermal treatments increase the number of hydrophilic centrums. Once the amount of these centrums has reached a certain critical value sufficient to form a continuous water film, bulk water condensation is observed. Change of properties during the water adsorption in the damaged films is not fully reversible. Each additional adsorption cycle increases the dielectric function of the film because of decreasing porosity, increasing skeleton density and shrinkage. The pressure corresponding to the bulk condensation allows us to calculate internal contact angle (internal surface energy) of low-k materials. The water molecules adsorbed on separate OH groups play the role of a catalyst that hydrolyses the siloxane bridges initially present on hydrophobic surface.
Low-Temperature PETEOS-to-PETEOS Wafer Bonding Using Titanium as Bonding Intermediate
Authors: Yu Jian , Moore Richard L. , Lee Sang Hwui , McMahon J. Jay , Lu Jian-Qiang , Gutmann Ronald J. 
Published: April 2011

AbstractBonding of pre-processed silicon wafers at back-end-of-the-line (BEOL) compatible conditions is one of the attractive approaches for three-dimensional (3D) integration. Among various technologies being evaluated, bonding of low temperature oxides (e.g., plasma-enhanced tetraethylorthosilicate (PETEOS)) is of great interest. In this work, we report low-temperature PETEOS-to-PETEOS wafer bonding, using a thin layer of titanium (Ti) as bonding intermediate. The bonding strength is evaluated qualitatively, while the bonding interface is examined by Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). Preliminary results of PETEOS/Ti/PETEOS bonding on patterned wafers with single-level Cu damascene structures are also discussed.
Challenges of Ultra Low-k Dielectric Measurement and Plasma Damage Assessment
Authors: Abell Thomas , Lee Jeffrey , Moinpour Mansour 
Published: April 2011

AbstractThe implementation of porous low-k and ultra-low k dielectrics to reduce RC delay in integrated circuit interconnect wiring has been fraught with numerous challenges. The obvious challenges of materials design and preservation of the desired electrical and mechanical properties upon subsequent processing have been significant. The vulnerability of these films to damage from fast ion and radiation damage will be discussed in the context of post-deposition processing (including low-k cure and plasma processing damage). This paper attempts to review the challenges associated with destructive and non-destructive measurement of low k dielectric films with respect to underlying physical principles of the metrology. Metrology techniques, assumed to be non-destructive based on experience with dense silicon dioxide, will be discussed with regards to newer and more fragile low-k dielectric films.
Fracture Properties of Porous MSSQ Films: Impact of Porogen Loading and Burnout
Authors: Ong Markus D , Jousseaume Vincent , Maitrejean Sylvain , Dauskardt Reinhold H. 
Published: April 2011

AbstractThis work investigates the effect of porogen loading on the fracture properties of methylsilsesquioxane (MSSQ) both before and after the porogen burnout process. The fracture behavior of the hybrid porogen/matrix materials differed significantly from that of the post-burnout materials. The most notable differences were alternative fracture paths and a trend of increasing fracture energy with increasing porogen loading. Characterization of the fracture surfaces indicate increasing amounts of carbon at the fracture interface corresponding to the increases in fracture energy and suggest bridging porogen molecules may be responsible for the increase in adhesion for the hybrid materials.
Comparison of the Fracture Behavior of Brittle ILD Films used in the BEOL in Dry and Wet Environment using Nanoindentation
Authors: Simonyi Eva , Lane Michael , Liniger Erik , Grill Alfred 
Published: April 2011

AbstractDuring the manufacturing process of the BEOL the low-k brittle ILD dielectrics are exposed to wet environments. These environments could and do affect the films fracture toughness, the so called critical film thickness, above which spontaneous cracking occurs. Nanoindentation combined with AFM imaging methods allow to study these phenomena.
Thin and Smooth Cu Seed Layer Deposition using the Reduction of Low Temperature Deposited Cu2O
Authors: Kim Hoon , Kojima Yasuhiko , Sato Hiroshi , Yoshii Naoki , Hosaka Shigetoshi , Shimogaki Yukihiro 
Published: April 2011

AbstractThin and continuous CVD Cu seed layer was successfully deposited on Ru under-layer by Cu oxide deposition and reduction method at 100°C with novel chemistry. Cu oxide was formed with Cu(hface)TMVS and H2O2 at 100°C, and this film was reduced with formic acid at 100°C. Deposited Cu oxide films were Cu2O that was confirmed by XRD and XPS. The morphology of oxide films showed smooth and continuous on Ru and Ta substrate. The reduced Cu film on Ru maintained good surface morphology, and no impurity was detected not only in the Cu film but also the interface between Cu and Ru. However, that on Ta had poor morphology by agglomeration of Cu film during reduction due to poor Cu wettability on oxidized Ta that was oxidized during oxide deposition. The readiness of reduction is very important merit of using Ru under-layer for this oxide deposition and reduction process. The oxide deposition and reduction method on Ru under-layer can be a promising candidate for thin and continuous seed layer deposition method.
Thermal and Electromigration-Induced Strains in Copper Conductor Lines: X-ray Microbeam Measurements and Analysis
Authors: Wang G. , Zhang H. , Cargill III G. S. , Hu C. -K. , Ge Y. , Maniatty A. 
Published: April 2011

AbstractWe have carried out measurements of electromigration-induced strains in copper conductor lines using microbeam energy dispersive x-ray diffraction. Strains developed in random texture damascene Cu 2μm-wide, 0.16 μm-thick conductor lines with TaN liners in low-k dielectric during electromigration at 350°C are much smaller than electromigration-induced strains in (111) fiber texture Al-on-Si, 10μm-wide, SiO2 passivated conductor lines. The reasons for these differences in electromigration behavior may involve the different roles of grain boundary and interface diffusion paths and the different passivation structures and materials for the two types of samples.
Effects of BEOL Stack on Thermal Mechanical Stress of Cu Lines
Authors: Rhee Seung-Hyun , Murray Conal E. , Besser Paul R. 
Published: April 2011

AbstractThe measurement and control of the stress state in BEOL interconnects are important to ensure structural integrity and long term reliability of integrated circuits. Thermal stress in interconnects is determined by the thermal-mechanical properties of Cu lines, substrate, and dielectric materials. The effect of BEOL stacks on thermal stress characteristics of Cu lines were investigated using X-ray diffraction stress measurements. The stress characteristics of M1 and M4 level interconnects in full low-k and low-k/oxide hybrid dielectric stacks were evaluated, and the results indicated reduced substrate confinement and an increased impact of the dielectric material on in-plane stresses in higher level interconnects. The effects of dielectric stack and material properties were examined and the implication in the stresses of multilevel interconnects are discussed.
Computer Simulations on the Grain Boundary Grooving and Cathode Edge Displacement in Bamboo-like Metalic Interconnects
Authors: Ogurtani Tarik Omer , Akyildiz Oncu 
Published: April 2011

AbstractThe process of grain boundary (GB) grooving and cathode edge displacement in sandwich type thin film bamboo lines are simulated by introducing a new mathematical model. In the absence of the electric field, the computer studies on the triple junction kinetics show that it obeys the first order reaction kinetics at early transient stage, which is followed by the familiar time law as t^1/4, at the steady state regime. The applied electric field (EF) in constant current experiments modifies this time law drastically above the well-defined electron wind intensity (EWI) threshold, and puts an upper limit for the groove depth, which decreases monotonically with EWI. Below the threshold level, the capillary regime predominates, and EF has little effect on the general kinetics of GB grooving, other then the linear increase in total elapsed time with EWI.
CMP-induced Peeling in Multi-level Ultra Low-k / Cu Interconnects
Authors: Leduc Patrick , Farjot Thierry , Savoye Mylène , Demas Anne-Cécile , Maitrejean Sylvain , Passemard Gerard 
Published: April 2011

AbstractThis work shows that the addition of dielectric levels in interconnect stacks increases significantly the CMP-induced peeling. The fracture energies, measured by 4-point bending technique, are less sensitive to the level number increase, even if they are slightly degraded. This leads to the conclusion that delamination during polishing depends highly on the stack elastic properties and there is no simple correlation between stack adhesion and peeling during CMP. In this work, mechanical damages generated during CMP in the dielectric stack before peeling were also investigated. It was shown that, if no peeling appears, CMP have no effect on stack reliability. This indicates that negligible “fatigue” effect takes place during CMP.
Gas Sensing with Gold Nanoparticle-Decorated GaN Nanowire Mats
Authors: Dobrokhotov Vladimir , McIlroy David , Berven Chris 
Published: April 2011

AbstractThe electrical properties of chemical sensors constructed from mats of bare GaN nanowires and GaN nanowires decorated with gold nanoparticles are presented. The sensors were tested in vacuum and at atmospheric pressures of Ar, N2 and methane. The current-voltage (I-V) curves of the sensor constructed with bare GaN nanowires were Ohmic and the device was insensitive to all gases tested. The I-V curves of the sensor constructed from GaN decorated with Au nanoparticles were non-linear and exhibited a drop in conductivity of five orders of magnitude relative to bare GaN nanowire sensors. The Au nanoparticle decorated nanowires also exhibited electrical responses that were chemically selective. The sensor exhibited a nominal response to Ar and a slightly greater response to N2 relative to vacuum. A suppression of the conductivity of the Au-GaN device of 50% was observed upon exposure to methane. Both the drop in conductivity of the Au-GaN nanowire-based sensor, relative to bare GaN nanowires, and the response to methane are explained in terms of the formation of a depletion layer and an increase in the depletion layer width due to physisorption induced surface potentials.
Towards Label-free Detection of Charged Macromolecules Using Field-effect-based Structures: Scaling Down from Capacitive EIS Sensor over ISFET to Nano-scale Devices
Authors: Schoening Michael J. , Abouzar Maryam H. , Ingebrandt Sven , Platen Johannes , Offenhaeusser Andreas , Poghossian Arshak 
Published: April 2011

AbstractThe possibility of a label-free electrical detection of charged macromolecules using semiconductor field-effect sensors offers a new approach for the development of DNA chips with fast and direct electrical readout. A deep understanding of the adsorption and interaction of charged biomolecules onto charged surfaces is of great interest also for the fundamental understanding of many key physiological processes. In the present work, two types of field-effect sensors, namely a capacitive EIS (electrolyte-insulator-semiconductor) structure and an ISFET (ion-sensitive field-effect transistor) have been utilised for monitoring layer-by-layer adsorption of polyelectrolytes as well as for the DNA immobilisation and hybridisation detection.
Metal/Porous Silicon Schottky Diode Structures as Sensors
Authors: Dzhafarov Tayyar , Lus Cigdem Oruc , AYDIN Sureyya , Cingi Emel 
Published: April 2011

AbstractIn this work we present data on investigation of the current-voltage and capacitance characteristics of Au/PS Schottky type structures in the presence of different hydrogen-containing solutions (glucose, ethanol, methanol, boric acid, sodium tetraborate pentahydrate, sodium borohydride, benzine, KOH). Generation of the open-circuit voltage and short-circuit current density and capacitance up to 0.55 V, 25 mA/cm2 and 1μF respectively on placing of Au/PS structures in these solutions was discovered. This effect is mainly caused by hydrogen component of solutions. The possible mechanism generation of voltage and capacitance in metal/PS sensors hydrogen-containing solutions is suggested. The advantage of metal/PS Schottky type sensors consists in working without applying external electricity.
Nano Monitors for Identification of Vulnerable Cardio-Vascular Plaque
Authors: Kondama Reddy Ravikiran , Prasad Shalini 
Published: April 2011

AbstractAs our nation's population ages, there will be a substantial demand for surgical services. The best predictor of postoperative outcome is the presence of perioperative ischemia, which is caused by vulnerable coronary plaque rupture. It is not know what makes plaques rupture, but inflammation has been proposed as a unifying etiology. The physiologic perioperative state is one of intense, acute inflammation and thrombosis. This is characterised by the presence of protien- Human Serum C-Reactive Protein( hsCRP) and Myeloperoxidase(MPO). There is a gap in detection capability between gold standard in proteomics detection –Enzyme Linked Immunosorbent Assay (ELISA) assay methods and electrical biosensors.ELISA based protein biomarker detection in too slow to be applicable in early patient bedside treatment. Electrical biosensors on the other hand may overcome this limitation with their improved sensitivity, specificity and rapid detection. In this application we demonstrate the development of nanomembrane based electrical protein “nano monitor”. This technique overcomes the limitations current “state-of- the- art” methods such as:• Specificity in detection of multiple markers that characterizes the disease pathogenesis from a single marker to multiple markers.• Speed of detection from a turnaround time of 12/24 hours to a few minutes.• Sensitivity of detection from milligram/ml to nanogram/ml.