bluuebunny/crossref_metadata_2025_split huggingface dataset:
Fabrication of Biaxially Oriented YBCO on (00l) Biaxially Oriented Yttria-Stabilized-Zirconia on Polycrystalline Substrates
Authors: Arendt Paul , Foltyn Steve , Wu Xin Di , Townsend John , Adams Chris , Hawley Marilyn , Tiwari Prabhat , Maley Martin , Willis Jeffrey , Moseley David , Coulter Yates 
Published: April 2011

AbstractIon-assisted, ion-beam sputter deposition is used to obtain (00l) biaxially oriented films of cubic yttria-stabilized-zirconia (YSZ) on polycrystalline metal substrates. Yttrium-barium-copper-oxide (YBCO) is then heteroepitaxially-pulse-laser deposited onto the YSZ. Phi scans of the films show the full-width-half maxima of the YSZ (202) and the YBCO (103) reflections to be 14° and 10° respectively. Our best dc transport critical current density measurement for the YBCO is 800,000 A/cm2 at 75K and 0T. At 75K, the total dc transport current in a 1 cm wide YBCO film is 23 A.
Substrate Effects on the Structure and Optical Properties of Epitaxial PbTiO3 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition
Authors: Foster C. M. , Li Z. , Bai G. R. , You H. , Guo D. , Chang H. L. M. 
Published: April 2011

AbstractEpitaxial PbTiOM3 films were prepared by metal-organic chemical vapor deposition (MOCVD) on MgO(001), SrTiO3 (001) and LaAlO3 (001) surfaces. Four-circle X-ray diffraction and optical waveguiding experiments were performed to characterize the deposited films. The films on all three substrates were single-crystal; however, the domain structure of the films was strongly dependent on the substrate material. Films on MgO and LaAlO3 substrates showed a large amount of 90° domain structures, whereas, the degree of twinning was greatly suppressed for films on SrTiO3. The refractive indices and optical birefringence of the films were measured as a function of wavelength using the film-prism coupling method. We found that for films on LaAlO3 (001), the ordinary index and for films on MgO(001) both the ordinary and extraordinary refractive indices were higher than those of bulk single-crystal PbTiO3. For films grown on SrTiO3 (001), the ordinary refractive index was very close to that of single crystal PbTiO3. We correlate the increased refractive index and the reduced birefringence to the degree of epitaxial strain and twinning in the samples, respectively.
PbTiO3 and PbZrxTi1-zO3 Films:Microstructure and Properties
Authors: Veirman A. E. M. De , Cillessen J. F. M. , Keijser M. De , Wolf R. M. , Taylor D. J. , Staals A. A. , Dormans G. J. M. 
Published: April 2011

AbstractHetero-epitaxial PbTiO3 films have been grown on different oxidic substrates. The orientation (the c or a axis being perpendicular to the substrate surface) and the morphology of the PbTiO3 film have been studied with transmission electron microscopy and X-ray diffraction. For non-volatile memory applications ferroelectric capacitors consisting of PbZrxTi1-xO3 films and Pt electrodes are most commonly used. The microstructure of PbZrxTi1-xO3 films (x=0.36 and x=0.71) grown on oxidized silicon provided with a Ti/Pt electrode, will be discussed in relation to the ferrroelectric properties. Finally, the use of La0.5Sr0.5CoO3 as an oxidic electrode is considered.
In Situ, Real-Time Analysis of the Growth of Ferroelectric and Conductive Oxide Heterostructures by a New Time-of-Flight Pulsed Ion Beam Surface Analysis Technique
Authors: Auciello Orlando , Krauss A. R. , Lin Y. , Chang R. P. H. , Gruen D. M. 
Published: April 2011

AbstractA new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.
Characterization of Sputtered Barium Ferrite Thin Films on Silicon Nitride Coated Carbon Substrates
Authors: Li Jinshan , Sinclair Robert , Rosenblum Stephen S. , Hayashi Hidetaka 
Published: April 2011

AbstractUsing facing target sputtering, randomly oriented crystalline barium ferrite(BaFe12O19, BaM) has been deposited onto a Ultra Densified Amorphous Carbon® (UDAC) substrate, producing high quality films in-situ at a substrate temperature of 6400°C without any post-deposition annealing. Cross section transmission electron microscopy (TEM) reveals that the films have columnar structure. A ˜100Å thick interdiffusion layer between BaM and silicon nitride underlayer was observed. Films grown at low oxygen partial pressure have lower saturation magnetization (Ms), that may be caused by the formation of some amorphous phase at the grain boundaries as noticed by plan-view TEM. The existence of the Fe2O3 phase in the BaM was also revealed by electron diffraction.
Epitaxial Magnetic Garnet Thin Films and Heterostructures by Pulsed Laser Deposition
Authors: Simion B. M. , Ramesh R. , Keramidas V. G. , Pfeffer R. L. , Thomas G. , Marinero E. 
Published: April 2011

AbstractEpitaxial yttrium-iron-garnet (YIG) films, bismuth-iron-garnet (BIG) films, and YIG/BIG heterostructures have been grown on [111] oriented single crystalline gadolinium-gallium-garnet (GGG) substrates by pulsed laser deposition (PLD), using a KrF excimer laser system. The films under study were grown over a range of temperatures from 600°C to 800°C and at 100 mTorr oxygen partial pressure. The effects of oxygen partial pressure during cooling on the structure, composition and magnetic properties of the films were investigated, employing X-ray diffraction, Rutherford back scattering spectroscopy coupled with He ion channeling, and vibration sample magnetometry. All specimens under study indicated that, independent of the film-substrate mismatch, the grown films were single crystalline in the [111] orientation. Preliminary studies on the effects of cooling oxygen partial pressure on the film structure indicate an increase in lattice distortion in the direction normal to the film surface with decreasing pressure. The magnetic properties of the films are comparable to the YIG bulk properties, and all films indicated in plane preferential magnetization, independent of cooling conditions.
Study of Arsenic Evolution During RTA of Au-Based Ohmic Contacts to GaAs
Authors: Piotrowska A. , Kaminska E. , Guziewicz M. , Piotrowski T. , Kwiatkowski S. 
Published: April 2011

ABSTRACTWe report on the formation of AuZn/p-GaAs ohmic contacts by short time annealing either in open or closed configuration with a dielectric or metallic capping layer. Quantitative determination of the amount of arsenic losses was of primary concern. This was studied using the Cr-collector method, applying three types of collectors all of them using 100 nm thick Cr film for seizing evaporative As losses. In the first type, the Cr film was deposited onto oxidized Si substrate. In the second type - quartz substrate was used for the deposition of chromium film while the third collector used natural mica as a substrate for the Cr film. The obtained results show that the loss of arsenic is reduced below 2×1014 atom/cm2 using thin 20 nm Au/10 nm Zn/60 nm Au metallization annealed with a capping layer at 440°C for 15 sec. Electrical measurements indicate that under these conditions good ohmic contacts are obtained.
Dielectrics on Silicon Thermally Grown or Annealed in a Nitrogen Rich Environment
Authors: Harrison H. Barry , Misiura Andrew , Dimitrijev Sima , Sweatman Denis , Yao Z. , Yeow Y.T. 
Published: April 2011

ABSTRACTIn this paper we review various methods of improving the properties of extremely thin dielectrics (<20 nm) using a nitrogen rich environment. The three main gases considered being ammonia, and nitrous and nitric oxides. We present original results for nitric oxide exposed silicon and suggest that for ultra thin dielectric (<5 nm) that these layers are generally superior to any others, whilst for thicker layers oxides annealed in nitrous oxides appear to display the best properties.
Electrical Properties of Stacked RTO/RTCVD Oxides as Gate Dielectrics
Authors: Misra V. , Xu X-L. , Wortman J.J. 
Published: April 2011

ABSTRACTTo meet the stringent demands of high quality gate performance in advanced devices, a more robust gate dielectric is needed. A stacked structure consisting of thermal oxide and deposited oxide is a potential candidate since it offers certain advantages over single layer oxides such as 1) reduced defect density, 2) reduced stress at the SiO2/Si interface due to stress compensation between the thermal and the deposited oxide, 3) less silicon consumption and 4) reduced thermal budget. In this study, stacked oxides consisting of RTO and RTCVD oxides are characterized. In contrast to other studies which use conventional LPCVD methods to form the top oxide, these stacked oxides have the advantages of rapid thermal and in-situ processing, which produces excellent bulk and interfacial properties. Electrical characterization has shown that these stacked oxides have superior performance compared to single layer furnace or deposited oxides.
Borophosphosilicate Glass(BPSG) Fusion Using Rapid Thermal Annealing and Steam Reflow: Physical Properties and Device Implications
Authors: Maxim Mike , Moinpour Mansour , Chu John , Nguyen Hien , Freiberger Phil , Stenton Nicky 
Published: April 2011

ABSTRACTWith decreasing device geometry to below sub micron dimensions, there is a greater emphasis on reducing the thermal budget by shortening and/or eliminating high temperature processing steps. The use of RTP for borophosphosilicate glass (BPSG) fusion/reflow process, which is conventionally performed in diffusion furnaces in temperature range of 850-900 °C, has gained some acceptance in recent years. BPSG films were prepared by an atmosphericpressure chemical vapor deposition(APCVD) process. BPSG film properties such as stress, shrinkage, dopant uniformity and surface stability, step coverage, and flow angle, have been examined as a function of densification/reflow cycle. We used RTP-only, furnace-only, and RTP/furnace reflow annealing cycles. The impact of various BPSG fusion scenarios on underlying Ti salicide and P-channel and N-channel devices is discussed.
Advanced Dram Cell Dielectric Films using Rapid Thermal Processing
Authors: Thakur Randhir P.S. , Mathews Viju K. , Fazan Pierre C. 
Published: April 2011

ABSTRACTThe reliable operation of a dynamic random access memory (DRAM) device requires a minimum level of charge to be stored in the capacitor. The nonlinear dependence between the scaling of the minimum charge and the cell area for higher DRAM densities is the driving force in the development of exotic capacitor structures and advanced cell dielectric materials. The conventional option of reducing the thickness of the silicon nitride dielectric films for high density DRAM applications will eventually be constrained by the increase in the leakage current due to direct carrier tunneling or by the decrease in the oxidation resistance of the films.In this paper we discuss the use of rapid thermal processing to modify the interface between the polysilicon storage node of the capacitor and the silicon nitride to improve the electrical and structural characteristics without any loss in capacitance. The influence of electrode roughness on the electrical behavior will also be discussed for the various dielectric stack combinations.
Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge0.12Si0.88
Authors: Lie D. Y. C. , Song J. H. , Theodore N. D. , Eisen F. , Nicolet M.-A. , Cams T. K. , Wang K. L. , Kinoshita H. , Huang Tzu-Hsin , Kwong D. L. 
Published: April 2011

ABSTRACTPseudomorphic Ge0.12Si0.88 films 265 nm thick grown by molecular beam epitaxy on p- Si(100) substrates were implanted with 100 keV 31P at room temperature for a dose of 5 x 1013/cm2. The projected range of the implanted P is about half the epilayer thickness. The implanted layers, together with non-implanted virgin samples, were subsequently annealed by both rapid thermal annealing in nitrogen and by steady-state furnace annealing in vacuum. The damage and strain of the annealed layers were studied by 4He channeling and x-ray doublecrystal diffraction. For a dose of 5 x 1013 P /cm2, both the damage and strain introduced by implantation can be completely removed, within instrumental sensitivity, by rapid thermal annealing at 700 °C for 10 - 40 s. Furnace annealing at 550 °C for 30 min for this sample removes most of the damage and strain induced by implantation. Furnace annealing at 700 °C or higher worsens the crystallinity of the layer and the strain relaxes. Hall measurements were performed on the same samples. Furnace annealing cannot achieve good dopant activation without introducing significant strain relaxation to the heterostructure, while rapid thermal annealing can.
Removal of Microcontaminants From Surfaces Using a Chemicalfree, Laser-Assisted Process
Authors: Engelsberg Audrey C. 
Published: April 2011

AbstractThe ability to control and eliminate microcontamination from the manufacturing process is becoming a critical technology issues for such diverse industries as semiconductors, aerospace, and automotive. Current industrial cleaning practices use large amounts of water and chemicals which require disposal. Dry environmentally benign technologies can be alternatives. In this paper, we will look at an alternative technology which consists of deep ultraviolet photons coupled with a flowing inert gas, and compare it to current wet cleaning practices in the semiconductor industry.
A Chemical Heat Pump With An Endothermic And Reversible Chemical System Incorporated
Authors: Tsuji M. , Wada Y. , Kodama T. , Hasegawa N. , Tamaura Y. 
Published: April 2011

AbstractA conceptual design of chemical heat pump system with reactive ceramics incorporated has been proposed and exemplified by several chemical reactions on activated metal oxides. It functions at temperatures of waste heat. The system involves the following endothermic reactions; (1) activation of metal oxide ceramics to activated ceramics using an oxygen-free inert gas, (2) H2O decomposition by the activated ceramics to form H2 gas at 300°C, (3) formation of CH4 from H2 and CO2 at 200–300°C, (4) CO2 decomposition to gaseous CO on activated oxide ceramics at 600–700°C. The working materials are typically magnetite, metal-bearing ferrites, transition metal-modified magnetite and other metal oxides. These basic reactions have been demonstrated to occur at temperatures of waste heat. The chemical heat pump will be effectively operated by incorporating their oxide membrane into the system. These findings have facilitated us to exploit a new field of research work. The above integrated chemical system may help the mitigation of CO2 in the global scale.
A New Preparation Technique of Activated Carbon Fiber
Authors: Ruowen F U , Lu Yun , Lu Haifeng , Zeng Hanmin 
Published: April 2011

AbstractIn this paper, the characteristic of a new preparation technique of activated carbon fiber (ACF) was discussed. The structures and properties of the ACF produced were investigated simultaneously. The experimental results indicated that this new technique is a high efficient method for the preparation of ACF. It needs simple facilities and is easy to be operated. The products obtained possess high specific surface area and adsorption capacity.
Studies on the Structure and Reduction Property of Metal-Containing Activated Carbon Fiber
Authors: Fu Ruowen , Lu Yun , Yue Zhongren , Zeng Hanmin 
Published: April 2011

AbstractIn order to improve the reduction ability and capacity of ACF, some metal-containing ACF (Me-ACF) were prepared. Their structures and reduction properties were investigated at the same time. On the basis of experimental results, a redox mechanism was proposed.
Heterogeneous Nucleation of Calcium Oxalate on Native Oxide
Surfaces
Authors: Song Lin , Pattillo Michael J. , Graff Gordon L. , Campbell Allison A. , Bunker Bruce C. 
Published: April 2011

ABSTRACTThe aqueous deposition of calcium oxalate onto colloidal oxides has been
studied as a model system for understanding heterogeneous nucleation
processes of importance in biomimetic synthesis of ceramic thin films.
Calcium oxalate nucleation has been monitored by measuring induction times
for nucleation using Constant Composition techniques and by measuring
nucleation densities on extended oxide surfaces using an atomic force
microscope. Results show that the dependence of calcium oxalate nucleation
on solution supersaturation fits the functional form predicted by classical
nucleation theories. Anionic surfaces appear to promote nucleation better
than cationic surfaces, lowering the effective energy barrier to
heterogeneous nucleation.
Volatile Mixed Metal Y-Ba and Ba-Cu Precursors for Mocvd of High
Tc Superconductors: A Way to Improve the Transport of Barium
?
Authors: Hubert-Pfalzgraf Liliane G. , Labrize Florence , Guillon Herve , Tobaly Patrick 
Published: April 2011

ABSTRACTThe fluoroisopropoxide ligand (HFIP) has allowed the synthesis of
mixed-metal homoleptic Ba2Y and CuBa alkoxides. However, although
these species are all volatile, their poor thermal stability precludes their
use as CVD precursors. Their properties have thus been optimized by
introduction of 2,2,6,6-tetramethylheptane-3,5-dione (thdH) in the metal
coordination sphere. Compounds such as
Y2Ba(μ-HFIP)4(thd)4, the first volatile
Y-Ba species reported so far, as well as
BaCu2(HFIP)4(thd)2 and
YCu(HFIP)2(thd)3 have been obtained. These
heterometallic ϐdiketonatoalkoxides have been characterized by a variety of
techniques including X-ray diffraction, mass spectrometry, vapor pressure
measurements and thermogravimetric analysis. Preliminary data on thermal
decomposition experiments are given.
Leaching Behavior of Edta In A Silica Sol-Gel
Matrix
Authors: Oka Kris S. , Mackenzie J.D. 
Published: April 2011

ABSTRACTEthylene diamine tetra-acetic acid (EDTA) doped silica gels were made by the
sol-gel process for the potential application as a filter for heavy metal
ions in wastewater. The behavior of the organic molecule in the matrix was
studied by investigating the percentage of EDTA leached out with a variation
in the timing of addition of the EDTA molecule into the starting silica gel
solution. Leach tests using water as the medium were performed for 2, 12 and
24 hours in order to determine the amount of EDTA trapped in the pores or in
the matrix. A minimum amount of EDTA leached from the gels was detected in
the samples to which EDTA was added 4 hours after initial hydrolysis of
TEOS. This result was correlated to having a greater percentage of pore
volume in the range of 15–20 Å, which was further substantiated with density
measurements. The physical changes in the silica matrix altering the pore
volume distribution were attributed to the addition of the water into which
the EDTA molecule was initially dissolved.
Tailoring Suspension Flow for the Gelcasting of Oxide and
Nonoxide Ceramics
Authors: Omatete O. O. , Bleffir A. 
Published: April 2011

ABSTRACTThe rheology of gelcasting slurries of concentrated (30 - 60 vol%) alumina,
zirconia, silicon nitride, and sialon powders with isoelectric points
varying between pH 5 and 9, was studied by measuring the viscosity and yield
stress as functions of pH. Typically, the rheology is non-Newtonian. The
lowest values of viscosity and yield stress that permit the highest solids
loading were obtained at high and low pH values, where the powders are
colloidally stable, far from the isoelectric points. This relationship
applies whether or not a polymer dispersant is present. The acrylamide
monomer which is used in gelcasting slurries, lowers these non-Newtonian
properties permitting the preparation of more concentrated slurries. Fluid
and pourable gelcasting slurries of each powder had apparent viscosities and
yield stresses less than 2.0 Pa·s and 50 Pa, respectively.
Surface Chemical Structure of Sío2-TiO2 Sol-Gel
Powders
Authors: Ingo G.M. , Padeletti G. , Dire' S. , Babonneau F. 
Published: April 2011

ABSTRACTAmorphous SiO2, TiO2 and x SiO2-(1-x)
TiO2 powders, with nominal values of x=0.9, 0.7 and 0.5, have
been prepared via sol-gel, using silicon tetrahoxysilane (TEOS) and titanium
tetraisopropoxide Ti(OPri)4. X-ray photoelectron
spectroscopy (XPS) and X-ray induced Auger electron spectroscopy (XAES) are
used for studying the surface chemical structure of the powders as a
function of the air thermal treatment temperature up to 1273 K. For the
whole range of temperature, XPS and XAES signals indicate that silicon and
titanium are present as Si4+ and Ti4+ oxides. From the
line shape of the O 1s peak, it is possible to distinguish between the
single O-Ti and O-Si bonds and to disclose also the presence of Si-O-Ti
cross linking bonds that are supposed to act as bridges between
SiO2 and TiO2 moieties. Starting from 873 K, the
Si-O-Ti bonds are broken and formation of a low amount of new Ti-O and a
higher amount of Si-O bonds takes place. Si/Ti atomic ratios obtained by
curve fitting the O Is peaks and from Ti 2p3/2 and Si 2p peaks,
confirm the silicon oxide surface enrichment. Furthermore, with increasing
temperature, XAES data indicate the formation of crystalline phases.
A General Nonhydrolytic Sol‐Gel Route to Oxides
Authors: Acosta Sylvie , Arnal Pascal , Corriu Robert J.P. , Leclercq Dominique , Mutin P. Hubert , Vioux Andre 
Published: April 2011

ABSTRACTA nonhydrolytic sol‐gel route based on the condensation between chlorides
and oxygen donors such as ethers and alkoxides is presented. Four examples,
silica, alumina, titania and binary oxides in the Al/Si system show that
this is a general route. The mechanism of this condensation is completely
different from the one of classical sol‐gel process, since it implies
nucleophilic substitution at the carbon center instead of the metal center.
As a consequence, the differences in reactivity between different metals are
reduced. In addition, the structure of the precursors may be retained in the
gel. Thus, the nonhydrolytic sol‐gel process is very efficient for the
preparation of homogeneous bicomponent oxides. Futhermore, nonhydrated gels
are formed, which allowed us to prepare amorphous aluminas with high surface
areas.
Sol-Gel Preparation and Characterization of Niobia thin Films
for Catalytic Sensor Applications
Authors: Ochoa Rosibel , Miranda Raul 
Published: April 2011

ABSTRACTThin films of niobium pentoxide were deposited on quartz plates by
spin-coating a solution of niobium ethoxide in ethanol. The films were
tested as potential selective gas sensors by exposing them to various
reducing environments. It was found that they were selective and sensitive
to ammonia. This sensitivity was attributed to the formation of
donor-acceptor complexes between chemisorbed ammonia and Lewis acid sites on
the solid.