bluuebunny/crossref_metadata_2025_split huggingface dataset:
Impact of Surface Chemistry on the Electrochemical Performance of LiCoO2
Authors: Pereira Nathalie , Al-Sharab Jafar , Cosandey Frederic , Badway Fadwa , Amatucci Glenn 
Published: April 2011

AbstractFor almost a decade there have been spurious reports that high specific capacity LiCoO2 can be stabilized through modification of the synthesis protocol, however no basis for this improvement was ever proven. In this study, high specific capacity (190 mAh/g) LiCoO2 with good cycling stability was successfully fabricated in this study with the purpose to identify the basis for, and reproduce the high specific capacity. Extensive physical and electrochemical characterization confirmed the improvement was directly related to the surface chemistry as opposed to bulk modification of the crystal chemistry. In particular, high resolution transmission electron microscopy confirmed the thermodynamic growth of a distinct surface phase of 5-10nm on the best materials. In contrast to extrinsically deposited surface coating, the intrinsic approach enabled a one step synthesis and modification using intrinsic constituents to result in a 5-10nm uniform coating of a cubic cobaltite based on fundamental phase stabilities as dictated by the phase diagram of the Li-Co-O system.
Micro- and Nano-instrument Power
Authors: Karanassios Vassili 
Published: April 2011

ABSTRACTFor the last several years, we have been developing and characterizing “mobile” micro- and nano-instruments for use on-site (e.g., in the field). Although such portable, battery-operated instruments are much smaller that their laboratory-scale counterparts, sometimes they provide comparable performance and they often offer improved capabilities. As such, they are expected to cause a paradigm shift in classical chemical analysis by allowing practioners to “bring the lab (or part of it) to the sample”. Two classes of examples will be used as the means with which to illustrate the power of micro- and nano-instruments. One class involves a “patient” as the sample and an ingestible capsule-size spectrometer used for cancer diagnosis of the gastro intestinal tack as (part of) “the lab”. The other involves the “environment” as the sample and a portable, battery-operated, miniaturized instrument that utilizes a PalmPilot™ with a wireless interface for data acquisition and signal processing as (part of) “the lab”. To discuss how to electrically power such miniaturized instruments, mobile energy issues will be addressed. Particular emphasis will be paid to current or anticipated future applications and to the paradigm shifts that may prove essential in powering the next generation of miniaturized instruments.
Synthesis, Characterization, Photocatalytic Activity and Dye-sensitized Solar Cell Performance of Nanorods/nanoparticles TiO2
Authors: Pavasupree Sorapong , Yoshikawa Susumu 
Published: April 2011

ABSTRACTNanorods/nanoparticles TiO2 with mesoporous structure were synthesized by hydrothermal method at 150 °C for 20 h. The samples characterized by XRD, SEM, TEM, SAED, HRTEM, and BET surface area. The nanorods had diameter about 10-20 nm and the lengths of 100-200 nm, the nanoparticles had diameter about 5-10 nm. The prepared material had average pore diameter about 7-12 nm. The BET surface area and pore volume of the sample are about 203 m2/g and 0.655 cm3/g, respectively. The nanorods/nanoparticles TiO2 with mesoporous structure showed higher photocatalytic activity (I3- concentration) than the nanorods TiO2, nanofibers TiO2, mesoporous TiO2, and commercial TiO2 (ST-01, P-25, JRC-01, and JRC-03). The solar energy conversion efficiency (η) of the cell using nanorods/nanoparticles TiO2 with mesoporous structure was about 7.12 % with Jsc of 13.97 mA/cm2, Voc of 0.73 V and ff of 0.70; while η of the cell using P-25 reached 5.82 % with Jsc of 12.74 mA/cm2, Voc of 0.704 V and ff of 0.649.
Highly Efficient Solar Cells Using Organic Dyes with Amorphous Moiety
Authors: Kim Sanghoon , Lee Jae Kwan , Jung Il , Song Kyu-Ho , Baik Chul , Choi Hyunbong , Kim Duckhyun , Fantacci S. , De Angelis F. , Yum J -H , Nazeeruddin Md. K. , Graetzel M. , Ko Jaejung 
Published: April 2011

ABSTRACTNovel organic sensitizers comprising donor; electron-conducting, and anchoring groups were engineered at molecular level and synthesized. The functionalized unsymmetrical organic sensitizers 3-{5-[N,N-Bis(9,9-dimethylfluorene-2-yl)phenyl]-thiophene-2-yl}-2-cyano-acrylic acid (JK-1) and 3-{5'-[N,N-Bis(9,9-dimethylfluorene-2-yl)phenyl]-2,2'-bithiophene-5-yl}-2-cyano-acrylic acid (JK-2), upon anchoring onto TiO2 film exhibit unprecedented incident photon to current conversion efficiency 91 %. The photovoltaic data using an electrolyte having composition of 0.6M M-methyl-N-butyl imidiazolium iodide, 0.04 M iodine, 0.025 M LiI, 0.05M guanidinium thiocyanate and 0.28 M tert.butylpyridine in 15/85 (v/v) mixture of valeronitrile and acetonitrile revealed a short circuit photocurrent density of 14.0 mA/cm2, an open circuit voltage of 753 mV and a fill factor of 0.76, corresponding to an overall conversion efficiency of 8.01 % under standard AM 1.5
MeV Ion Beam Bombardments Effects on the Thermoelectric Properties of Zn4Sb3 / CeFe(4-x)CoxSb12 Nano-Layered Superlattices
Authors: Budak S. , Smith C. C. , Zheng B. , Muntele C. I. , Zimmerman R. L. , ILA D. 
Published: April 2011

ABSTRACTWe prepared multilayers of semiconducting half-heusler β-Zn4Sb3 and skutterudites CeFe(4-x)CoxSb12 compound thin films by ion beam assisted deposition (IBAD) system for the application of thermoelectric (TE) materials. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of thin films. The thin films were then bombarded by 5 MeV Si ions for generation of nanodots in the films. We measured the cross-plane thermal conductivity by a house developed 3ω-method system, cross-plane Seebeck coefficient by a (MMR) Seebeck system, and cross plane electrical conductivity of these nanolayered systems by a (MMR) Hall system before and after bombardment. Both β-Zn4Sb3 and CeFe(4-x)CoxSb12 systems have been identified as promising thermoelectric materials for the application of thermal-to-electrical energy conversion. The nanodots produced by MeV ion beam can cause significant change in both electrical and thermal conductivity of thin films, thus improving the efficiency. The MeV ion-beam bombardment resulted in decrease in the thermal conductivity of thin films and increase in the efficiency of thermal-to-electrical energy conversion.
ADF-STEM Imaging of Strained GaN0.045As0.955 Epitaxial Layers on (100) GaAs Substrates
Authors: Wu X. , Robertson M.D. , Gupta J.A. , Baribeau J.-M. , Bennett J.C. , Kawasaki M. , Aoki T. 
Published: April 2011

ABSTRACTThe annular dark field (ADF) image contrast of a 0.92% tensile strained GaN0.045As0.955 layer on GaAs substrate was studied with a scanning transmission electron microscope (STEM) as a function of ADF detector inner semi-angles ranging from 28 mrad to 90 mrad. The GaN0.045As0.955 layers were brighter than the surrounding GaAs for the values of ADF detector semiangle up to 65 mrad, and the measured contrast decreased with increasing ADF detector inner semi-angle. For a 37 nm thick specimen, the GaN0.045As0.955 intensity is about 13% higher than that of GaAs in the 28 mrad ADF detector inner semi-angle. Multislice simulations show that the displacement around substitutional N atoms plays an important role in the observed ADF-STEM contrast, while the contribution to the contrast due to misfit strain between GaN0.045As0.955 and GaAs is small.
Hot-Wire Chemical Vapor Deposition Epitaxy on Polycrystalline Silicon Seeds on Glass
Authors: Teplin Charles W. , Branz Howard M. , Jones Kim M. , Romero Manuel J. , Stradins Paul , Gall Stefan 
Published: April 2011

AbstractDuring the last few years, hot-wire chemical vapor deposition (HWCVD) has been explored as a low-temperature process for epitaxially thickening c-Si seeds layers on low cost substrates. Here, we demonstrate HWCVD epitaxy on thin polycrystalline silicon seed layers on borosilicate glass substrates. The crystal Si seeds are large-grained (~10 µm) polycrystalline silicon that were fabricated by Al-induced crystallization of a-Si. We report the growth of 0.5 µm of epitaxy at ~670°C.
Grain Size Control by Means of Solid Phase Crystallization of Amorphous Silicon
Authors: Farjas Jordi , Roura Pere , Roca i Cabarrocas Pere 
Published: April 2011

AbstractThe grain size of thermally crystallized a-Si films is controlled by the nucleation, rN, and growth, rG, rates according to the standard Avrami's theory. Despite this evidence, most papers devoted to improve the crystallized grain size analyze their results with a qualitative reference to this theory. In this paper, we will show that one can identify the standard set of rN and rG values for a-Si and that experiments show that deviations from this standard values always result in a smaller grain size. It is also shown that one cannot expect any substantial improvement with non-conventional heat treatments. Finally, it is argued that a larger grain size is expected from a-Si films containing, in their as-grown state, a controlled density of embedded nanocrystals.
Reliability of Silicon Nitride Gate Dielectric in Vertical Thin-Film Transistors
Authors: Moradi Maryam , Striakhilev D. , Chan I. , Nathan A. , Cho N. I. , Nam H. G. 
Published: April 2011

AbstractIn this work, we have conducted a systematic investigation of leakage current and electrical breakdown of plasma enhanced chemical vapor deposited (PECVD) silicon nitride, both for planar films and deposited films on the vertical sidewall for the application of the vertical thin film transistors. The thickness evolution of physical properties and electrical characteristics of silicon nitride films in the range of 50 to 300 nm are investigated. Electrical breakdown strength for 150-300nm thick films was approximately 7 MV/cm, whereas the value dropped to ~3MV/cm for 50nm thick films deposited under the same process conditions. It is shown that the early failure of the thin nitride is accompanied by the increase of the pinholes number. For the vertical thin film transistors, the experimental result shows the reliability and leakage current of the gate dielectric depends on the step coverage of the silicon nitride film on the vertical sidewall.
Single Grain Si TFTs Fabricated at 100oC for Microelectronics on a Plastic Substrate
Authors: He Ming , Ishihara R. , Chen T. , Metselaar J.W. , Beenakker C.I.M. 
Published: April 2011

AbstractSingle grain TFTs are fabricated at a maximum temperature of 100oC for macroelectronics on a plastic substrate, as Si channels are fabricated at 100oC by combination of excimer laser crystallization and sputtering. The gate oxide is formed at 80°C by inductively coupled plasma enhanced chemical vapor deposition. These TFTs have shown a smaller threshold swing of 0.49 V/dec. and a higher field-effect mobility of 290 cm2/V·s, which can be used to directly fabricate system circuits or a high quality display on a plastic substrate.
Contact Effects in High Mobility Microcrystalline Silicon Thin-Film Transistors
Authors: Chan Kah Yoong , Bunte Eerke , Stiebig Helmut , Knipp Dietmar 
Published: April 2011

AbstractMicrocrystalline silicon (mc-Si:H) has recently been proven to be a promising material for thin-film transistors (TFTs). We present mc-Si:H TFTs fabricated by plasma-enhanced chemical vapor deposition at temperatures below 200°C in a condition similar to the fabrication of amorphous silicon TFTs. The mc-Si:H TFTs exhibit device mobilities exceeding 30 cm2/Vs and threshold voltages in the range of 2.5V. Such high mobilities are observed for long channel devices (50-200 mm). For short channel device (2 mm), the mobility reduces to 7 cm2/Vs. Furthermore the threshold voltage of the TFTs decreases with decreasing channel length. A simple model is developed, which explains the observed reduction of the device mobility and threshold voltage with decreasing channel length by the influence of drain and source contacts.
Rapid Crystallization of Amorphous Silicon Utilizing the Plasma Annealing at Atmospheric Pressure
Authors: Shirai Hajime , Sakurai Yusuke , Ye Mina , Haruta Koji , Kobayashi Tomohiro , Takemura Yu-ichiro 
Published: April 2011

AbstractThe rapid crystallization of amorphous silicon utilizing the rf inductive coupling thermal plasma jet of argon is demonstrated. Highly crystallized a-Si films were fabricated on th-SiO2 and textured a-Si:H:B/SnO2/glass by adjusting the translational velocity of the substrate stage. The H concentration in the films decreased from 1021 cm-3 to 1019 cm-3 with no marked increases in oxygen and nitrogen impurity concentrations and defect density. The crystallization proceeds from the bottom to front surface in terms of the volume expansion during the solidification and crystallization of liquid Si.
Status of nc-Si:H Solar Cells at United Solar and Roadmap for Manufacturing a-Si:H and nc-Si:H Based Solar Panels
Authors: Yan Baojie , Yue Guozhen , Guha Subhendu 
Published: April 2011

AbstractThis paper reviews the research and development of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells at United Solar Ovonic LLC. We have been studying nc-Si:H solar cells since 2001 and have made significant progress. We have achieved an initial active-area cell efficiency of 15.1% using an a-Si:H/a-SiGe:H/nc-Si:H triple-junction structure, a stable active-area cell efficiency of 13.3% using an a-Si:H/nc-Si:H/nc-Si:H triple-junction structure, and a stable aperture-area (420 cm2) fully encapsulated module efficiency of 9.5% using an a-Si:H/nc-Si:H double-junction structure. Although the cell efficiencies with nc-Si:H in the middle and/or bottom cells have exceeded the corresponding efficiencies achieved using a-Si:H and a-SiGe:H, we still need to address several critical issues before using nc-Si:H in photovoltaic manufacturing plants. First, the cell efficiency needs to be improved further to show a clear advantage over the conventional a-Si:H/a-SiGe:H/a-SiGe:H triple-junction cell structure. Second, we need to increase the deposition rate further to make the nc-Si:H based technology more cost effective. Third, we need to develop a machine design to overcome the large-area uniformity issue, especially for very high frequency glow discharge deposition. Fourth, we need to qualify nc-Si:H based solar cell product, especially with respect to long term reliability. We have been addressing these critical issues, and will discuss the roadmap for manufacturing a-Si:H and nc-Si:H based solar panels using the roll-to-roll technology.
Manufacturing of TFTs with High Deposition Rated Microcrystalline Silicon using Plasma Enhanced Chemical Vapor Deposition
Authors: Park Kyung-Bae , Jung Ji-Sim , Kim Jong-Man , Ryu Myung-kwan , Lee Sang-Yoon , Kwon Jang-Yeon 
Published: April 2011

AbstractMicrocrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4. Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350oC. The deposition rate in films was as high as 10&Aring;/sec. This process produced ¥ìc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.
Silicon Nanowires: Growth Studies Using Pulsed PECVD
Authors: Parlevliet David , Cornish John C.L. 
Published: April 2011

AbstractSilicon nanowires with high aspect ratios have been grown at high density using a variation of Plasma Enhanced Chemical Deposition (PECVD) known as Pulsed PECVD (PPECVD). Growth rate and morphology were investigated for a range of catalysts: gold, silver, aluminum, copper, indium and tin. The thickness of the catalyst layer was 100nm. Deposition was carried out in a parallel plate PECVD chamber at substrate temperatures up to 350°C, from undiluted semiconductor grade Silane. A 1 kHz square wave was used to modulate the 13.56 MHz RF power. Samples were analyzed using either a Phillips XL20 SEM or a ZEISS 1555 VP FESEM. The average diameter for nanowires grown using a gold catalyst layer was 150nm and the average length was 4μm although some nanowires were observed with lengths up to 20μm. Back-scattered-electron images clearly show gold present at the tips of the silicon nanowires grown using gold as a catalyst, confirming their growth by the vapor liquid solid (VLS) mechanism. Sporadic growth of nanowires was detected when using copper as a catalyst. Although gold performed best as catalyst for nanowire growth it was, however, closely followed by tin. The other catalysts produced nanowires with properties between these extremes.
Temperature Dependence of Silicon-based Thin Film Solar Cells on Their Intrinsic Absorber
Authors: Sriprapha Kobsak , Yunaz Ihsanul Afdi , Hiza Shuichi , Ahn Kun Ho , Myong Seung Yeop , Yamada Akira , Konagai Makoto 
Published: April 2011

AbstractThe temperature dependence of Si-based thin-film single junction solar cells on the phase of the intrinsic absorber is investigated in order to find the optimal absorber at high operating temperatures. For comparison, hydrogenated amorphous, protocrystalline, and microcrystalline silicon solar cells are fabricated by plasma-enhanced chemical vapor deposition and hot-wired CVD techniques. Photo J-V characteristics are measured using a solar simulator at the ambient temperature range of 25-85°C. It is found that the cells with a higher open-circuit voltage usually show lower temperature-dependent behaviors; the protocrystalline silicon solar cells provide the lowest temperature coefficient of efficiency, while the microcrystalline silicon solar cells are highly sensitive to the temperature. Therefore, protocrystalline silicon solar cells are promising for use in high temperature regions.
Efficient Thin-Film Polycrystalline-Silicon Solar Cells Based on Aluminium-Induced Crystallization
Authors: Gordon Ivan , Carnel Lode , Van Gestel Dries , Beaucarne Guy , Poortmans Jef 
Published: April 2011

AbstractEfficient thin-film polycrystalline-silicon (pc-Si) solar cells on inexpensive substrates could lower the price of photovoltaic electricity substantially. At the MRS conference in 2006, we presented a pc-Si solar cell with an efficiency of 5.9% that had an absorber layer made by aluminum-induced crystallization (AIC) of amorphous silicon followed by high-temperature epitaxial thickening. The efficiency of this cell was mainly limited by the current density. To obtain higher efficiencies, we therefore need to implement an effective light trapping scheme in our pc-Si solar cell process. In this work, we describe how we recently enhanced the current density and efficiency of our cells. We achieved a cell efficiency of 8.0% for pc-Si cells in substrate configuration. Our cell process is based on pc-Si layers made by AIC and thermal CVD on smoothened alumina substrates. The cells are in substrate configuration with deposited a-Si heterojunction emitters and interdigitated top contacts. The front surface of the cells is plasma textured which leads to an increase in current density. The current density is further enhanced by minimizing the back surface field thickness of the cells to reduce the light loss in this layer. Our present pc-Si solar cell efficiency together with the fast progression that we have made over the last few years indicate the large potential of pc-Si solar cells based on the AIC seed layer approach.
The Impact of Diamond Conditioning on Surface Contact in CMP Pads
Authors: Elmufdi Carolina L , Muldowney Gregory P. 
Published: April 2011

ABSTRACTTotal contact area between a CMP pad and wafer has emerged as a fundamental property that is directly linked to both removal rate and defectivity. Contact area has been shown to depend on surface morphology as it results from pad microstructure and material properties. Pads exhibiting higher contact area, hence imparting lower point stresses to the wafer, are effective in reducing CMP-related defects. The present study quantifies pad-wafer contact characteristics for both hard and soft porous polyurethane pads as a function of the extent of diamond conditioning. An Instron microtester is used to impart controlled quasi-static pad compression against a sapphire cover slip mounted on a Zeiss confocal microscope. Images collected through the microscope at discrete compressive states are analyzed off-line to quantify the total contact area and the size, shape, and distribution of individual contacts. A relationship is then established between these contact measures and the extent of conditioning. Conditioning decreases the mean asperity contact size as expected, but the evolution of contact regions shows non-intuitive features. In particular, total contact area passes through a minimum within the typical conditioning time of commercial CMP processes, then gradually increases. Clustered contact regions observed at short conditioning times spread out to a more uniform lateral spacing at longer conditioning times. These findings are accounted for by considering the texture subdivision achieved by individual diamonds together with bridging by the conditioning disk of higher regions on an unlevel pad surface. Textures produced by different conditioners on the same pad are quantified in terms of total contact area and number and uniformity of contact points. Formation of an ideal texture of abundant, well-spaced and level asperities is expedited by both conditioner type and treatment time. The results illustrate that evolution of pad contact area under compression is an essential measure for understanding polishing metrics such as wafer removal rate, defect count, and pad wear, and indicate clear direction for next-generation pad microstructures to achieve low-stress planarization.
AFM investigations of chemical-mechanical processes on silicon(100) surfaces
Authors: Iomoto Ruiji , Stevens Forrest , Langford Steven , Dickinson Tom 
Published: April 2011

ABSTRACTAtomic force microscopy (AFM) was used to examine chemical-mechanical processes on Si (100) surfaces. Places where the underlying silicon was exposed etched in basic solution, producing structures 100 nm or less in size. Etching occurs only in the presence of combined mechanical and chemical effects. By performing AFM in basic solution, the entire etching process could be observed directly. High-force scans were used to remove oxide and initiate etching in selected locations, followed by low-force scans which imaged the etching process. Although roughness initially increased during etching, the final surfaces were smooth. The etching was measured for different applied loads, numbers of scans, concentrations of the etching solution, and time. The oxide layer was extremely sensitive to applied stress, and even very light scanning caused the oxide layer to dissolve more rapidly. Once the oxide layer was removed, chemical etching proceeded with or without AFM scanning, but if AFM scanning was continued additional material was removed, probably by a tribochemical mechanism on pure Si.