bluuebunny/crossref_metadata_2025_split huggingface dataset:
An Apparatus for Magnetron Sputter Coating and Plasma Immersion Ion Implantation
Authors: Ensinger W. , Hartmann J. , Klein J. , Usedom P. , Stritzker B. , Rauschenbach B. 
Published: April 2011

AbstractA coating apparatus which combines two material modification techniques, sputter coating and plasma immersion ion implantation, is described. The plasma is generated by an electron cyclotron resonance microwave plasma source. In the upper part of the vacuum chamber, the plasma is confined in a magnetic field by means of a solenoid. In the lower part, a magnetron sputter cathode is mounted which is used for depositing thin films on the sample. The sample is clamped onto a water-cooled sample holder which can be moved in vertical direction. It is connected to a semiconductor-based high voltage pulse generator which provides negative voltage pulses. In this apparatus, a substrate can be pre-implanted by plasma immersion ion implantation, then it can be coated by sputtering. Finally, the sputtered film can be modified by another ion implantation step.
Using Electron Cyclotron Resonance Plasma for Depositing Epitaxial Titanium Nitride Thin Films
Authors: Murzin I.H. , Hayashi N. , Sakamoto I. 
Published: April 2011

AbstractWe have employed a 2.45 GHz electron cyclotron resonance (ECR) plasma source to deposit single-crystal thin films of titanium nitride onto MgO substrates of (100) orientation. During deposition the ECR plasma beam delivering a mixture of excited species of molecular and atomic nitrogen ions, strikes a substrate while an electron beam deposits on the same substrate species of titanium. We have studied the formation of films at substrate temperatures of 200, 400, and 600°C, as well as at room temperature. X-Ray diffraction (XRD) revealed that a cubic Bl phase of titanium nitride forms predominantly at all the temperatures explored. Both channeling and Rutherford backscattering spectroscopy (RBS) showed epitaxial layers forming at the temperature as low as 400°C. The minimum relative backscattering yield, χmin decreased as the temperature increased, with the best result of 7.3% obtained for the film deposited at 600°C. Biasing the substrates with either negative or positive voltage at room temperature directly affects film crystallography.
Deposition of High Quality SiO2 Films Using Teos by ECR Plasma
Authors: Sano K. , Tamamaki H. , Nomura M. , Wickramanayaka S. , Nakanishi Y. , Hatanaka Y. 
Published: April 2011

AbstractSiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.
Ion Beam Assisted Deposition of Si-Diamond-Like Carbon Coatings on Large Area Substrates
Authors: Fountzoulas Costas G. 
Published: April 2011

AbstractHard, low-friction silicon-containing diamond-like carbon coatings (Si-DLC), were formed by Ar+ ion beam assisted deposition (IBAD), on 5 in. diameter silicon wafers. The diffusion pump oil precursor (tetraphenyl-tetramethyl-trisiloxane: (C6H5)4(CH3)4Si3O2) was evaporated through seven, 3 mm diameter, closely packed apertures (multinozzle/multi-aperture container) arranged in a hexagonal pattern, approximately 5 mm apart according to mathematical model [1[ developed at ARL describing the spatial distribution of film deposition from nozzles and apertures onto inclined substrates.The ion energy was kept at 40 keV whereas the ion current density and the oil evaporation temperature were varied to produce hard, lubricious and adherent films. The multinozzle array allowed the relatively uniform (± 20%) coverage of the entire 5 in. substrate. The thickness and the microhardness of the films were measured along the rectilinear surface coordinates of the substrate area. Depending on the deposition parameters the standard deviation of the coating thicknesses and Knoop micro-hardness varied from 14 to 30 percent respectively over the substrate. This is a significant improvement from the previously used single nozzle set up where the standard deviation of the coating thickness was 50 to 100 percent for 2 in. diameter substrates. The Knoop microhardness and the sliding friction coefficient of these coatings ranged from 10,000 to 20,000 MPa and 0.04 to 0.2 respectively. These values are in agreement with our previously reported single nozzle results [2].
Thin Mo Films Deposited and Analyzed Using Sub-Kev Noble Gas Ions
Authors: Der Kuur Jan Van , Melker Ernst-Jan E. , Huijgen Tom P. , Hoondert Wilbert H.B. , Bekking Gerard T.W.M. , Den Beukel Arie Van , Thijsse Barend J. 
Published: April 2011

AbstractUsing He+ as probe particles, we have studied point defects in Mo thin films (5-1000 Å) deposited without and with Ar+ ion beam assistance (0.2–22 eV per Mo atom). It is found that the net effect of the ion beam is to produce rather than to annihilate point defects. Ar incorporation is only slight (-10-4). Annealing of the films leads to the thermal production of polyvacancies.
Growth of Tin Oxide Film Deposited by a Hybrjd Ion Beam
Authors: Choi W.K. , Cho J.S. , Song S.K. , Jung H.-J. , Jeon J.S. , Choi D. , Koh S.K. 
Published: April 2011

AbstractTin oxide thin films were grown on Si(100) substrates by a hybrid ion beam consisting of a partially ionized beam and a cold hollow cathode ion source. Tin metal particles were ionized and accelerated by a partially ionized ion beam source while oxygen gas was introduced or ionized oxygen was introduced upon the Si substrate. When oxygen gas was blown near the substrate during Sn metal evaporation, the composition of deposited tin oxide films revealed mainly Sn metal and SnO, whereas tin dioxide films with highly preferred orientation of SnO2<200 or SnO2<110 axis were successfully grown when ionized oxygen was assisted. The calculated value of the composition ratio of oxygen to Sn(O/Sn) by AES for the SnO2(200) film was approximately 1.98. Moreover, the binding energy of Sn 3d5/2 was determined to be at 486.74 eV by XPS measurement, and the result coincided well with that of standard SnO2 powder. Compared with two different deposition processes, ionized oxygen assistance during tin metal evaporation would be considered to effectively improve oxygen content for the formation of tin dioxide thin films.
Design of a Compact Negative Metal Ion Beam Source for Surface Studies
Authors: Park Y. , Ko Y.W. , Sohn M.H. , Kim S.I. 
Published: April 2011

AbstractA compact negative metal ion beam source for direct low energy metal ion beam depositions studies in ultra high vacuum (UHV) environment, has been developed. The ion source is based on SKION's Solid State Ion Beam Technology. The secondary negative metal ion beam is effectively produced by primary cesium positive ion bombardment (negative ion yield varies from 0.1-0.5 for carbon). The beam diameter is in the range of 0.2∼3.0 cm depending on the focusing and ion beam energy. The ion source produces negative ion currents of about 0.8 mA/cm2. The energy spread of the ion beam is less then ±5% of the ion beam energy. The energy of negative metal ion beam can be independently controlled in the range of 10-300 eV. Due to the complete solid state ion technology , the source can be operated while maintaining chamber pressures of less then 10-10 Torr.
New Instrumentation in Argonne's Hvem-Tandem Facility: Expanded Capability for in Situ Ion Beam Studies+
Authors: Allen Charles W. , Funk Loren L. , Ryan Edward A. 
Published: April 2011

AbstractDuring 1995, a state-of-the-art intermediate voltage electron microscope (IVEM) has been installed in the HVEM-Tandem Facility with in situ ion irradiation capabilities similar to those of the HVEM. A 300 kV Hitachi H-9000NAR has been interfaced to the two ion accelerators of the Facility, with a spatial resolution for imaging which is nearly an order of magnitude better than that for the 1.2 MV HVEM which dates from the early 1970s. The HVEM remains heavily utilized for electron- and ion irradiation-related materials studies, nevertheless, especially those for which less demanding microscopy is adequate. The capabilities and limitations of this IVEM and HVEM are compared. Both the HVEM and IVEM are part of the DOE funded User Facility and therefore are available to the scientific community for materials studies, free of charge for non-proprietary research.
Focused Ion Beam Metrology
Authors: Wagner A. , Blauner P. , Longo P. , Cohen S. 
Published: April 2011

AbstractFocused Ion Beams offer a new method of measuring the size of polymer resist features on integrated circuits. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension (CD) metrology. By confining the polymer damage to the very near surface, ion beams can induce less dimensional change than scanning electron microscopes during the measurement process. This can result in improved CD measurement precision. The erosion rate of polymers to various ion species is also presented, and we show that erosion is non-linear with ion dose. The use of FIB for forming resist cross sections is also demonstrated. An H20 gas assisted etching process for polymers has been developed, and is shown to significantly improve the quality of resist cross sections.
Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge Preimplantation
Authors: Kase M. , Mori H. 
Published: April 2011

AbstractFor low energy B (LEB) implantation into Si, the channeling tail is larger than for BF2+ implantation, so Ge+ preamorphization is expected to provide a shallower junction. We studied the Ge+ and B+ implantation damages and the damage-induced B diffusion. The substrate implanted Ge+ with 2×l014 cm-2, that is, a complete amorphization, retains less residual defects after RTA. However the sheet resistivity (S) is higher than the sample implanted with only LEB. Solid phase epitaxy (SPE) of amorphized layer causes B out-diffusion. The diffusion length of the amorphized substrate is smaller than that of LEB. We expect that the B diffusion is enhanced by the LEB damage, which corresponds to the enhanced diffusion of light damage.
Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, Bf2, and as Ion Implantation
Authors: Parab K. B. , Yang S.-H. , Morris S. J. , Tian S. , Morris M. , Obradovich B. , Tasch A. F. , Kamenitsa D. , Simonton R. , Magee C. 
Published: April 2011

AbstractWith increasing levels of integration, future generations of integrated circuit technology will require extremely shallow dopant profiles. Ion implantation has long been used in semiconductor material processing and will be a vitally important technique for obtaining ultra-shallow dopant profiles. However, implant channeling for low energy ion implantation must be understood and minimized. We report the results of a detailed experimental analysis of 275 ultra-shallow boron, BF2, and arsenic as-implanted profiles, and the development of an accurate and computationally efficient model for ultra-shallow implants.The ultra-shallow dopant profiles have been modeled by using the Dual-Pearson approach, which employs a weighted sum of two Pearson functions to simulate the profiles. The computationally efficient model covers the following range of implant parameters: implant species B, BF2, As; implant energies from 1 keV to 15 keV; any dose; tilt angles from 0° to 10°; all rotation angles (0°-360°). This experimental analysis is important for the development of scaled devices with ultra-shallow junctions, and the computationally efficient model will enable process simulators to predict ultra-shallow as-implanted profiles accurately.
Mev Ion Induced Damages and their Annealing Behavior in Silicon
Authors: Cho Nam-Hoon , Jang Ki-Wan , Lee Jeong-Yong , Ro Jae-Sang 
Published: April 2011

AbstractMeV ion induced damage and annealing behavior in Si are reported using 3 ion species such as B, P and Si. Si self implantations were done to reveal the intrinsic behavior of secondary defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant atoms. Experimental results of B and P implantations were compared to those of Si. TEM observations showed that interstitial type secondary defects are exclusively formed at around Rp. DCXRD rocking curve analyses indicated that an isolated layer of (+) strain is built up at around Rp after strain relaxation by annealing. Sources for secondary defects were thought to be Si self interstitials. Atomistic mechanisms of secondary defect formation and the effect of ion species on them are discussed.
The Effects of Low Energy Ion-Beam Milling on the Physical and Electrical Properties of N-GaAs.
Authors: Seng W.F. , Barnes P.A. , Lovejoy M.L. , Fu L.P. , Gilliland G.D. , Ila D. 
Published: April 2011

AbstractLow energy neutral Ar ion-beam etching of n-GaAs was investigated as a possible “cleaning” procedure prior to contact metallization. The ion-beam source energy was varied between 35 eV and 1200 eV at a fixed current density of 1 mA/cm2. The effects of ion-milling on lightly doped n-GaAs were analyzed electrically by measuring current-voltage (IV) and capacitance-voltage (CV) characteristics of Schottky barriers formed after the ion-milling. The metal semiconductor barriers were prepared immediately following ion-milling without breaking vacuum. Photoluminescence and Rutherford Backscattering (RBS) were used to determine if any physical modification of the surface and near surface region of the ion-milled substrates had occurred.
Annealing Effect of Cd+ Ion-Implanted Liquid Encapsulated Czochralski-GaAs
Authors: Kawasumi Y. , Makita Y. , Kimura S. , Iida T. , Kotani M. , Obara A. , Shibata H. , Kobayashi N. , Tsukamoto T. , Kobayashi E. 
Published: April 2011

AbstractFurnace annealing (FA) and rapid thermal annealing (RTA) were made for Cd+ ion-implanted GaAs with Cd concentration, [Cd] from 1×1016cm−3 to 3×1021 cm−3. In FA samples, Raman scattering spectra exhibited a single peak at 292 cm−1 for entire [Cd] range which is LO-phonon mode from (100) GaAs. In RTA samples, LO-phonon mode is a single peak for [Cd]<1×1019cm−3 but with growing [Cd], TO-phonon mode appears for [Cd] 1×1020cm3 and becomes a dominant signal for [Cd]=3×1021 cm−3. The quenching of LO-phonon mode with increasing [Cd] was more clearly observed in RTA samples than in FA ones. Hall-effects results, however, showed that activation rate of RTA samples is 6–7 times larger than that of FA ones for [Cd] 1×1021 cm−3. 2K photoluminescence spectra revealed that in FA samples multiple shallow emissions associated with Cd are formed while in RTA ones the dominant emission is the band to Cd acceptor transition.
Ion Mixing in Film-Substrate Systems Under Polyenergetic Ar+Ion Beam Irradiation
Authors: Kalin B.A. , Volkov N.V. , Gladkov B.P. , Sabo S.E. , Atalikova I.H. , Altuhov A.A. 
Published: April 2011

AbstractThe results of alloying Al, Fe, and Mo surfaces by Be, Al, Ni, Sn under polyenergetic Ar+ ion beam irradiation with a mean energy of 10 keV have been presented. It has been shown that along with film and substrate materials sputtering there takes place the penetration of film atoms into substrate materials at a depth which is significantly greater (by a factor of 3… 10) than the projective range of ions in the given materials. The analysis of possible alloying depths with regard to different models (pure radiation range for monoenergetic ion beams; when the decrease of concentration is approximated by the exponential dependence; when the internal forcing out stresses are taken into account) for equal irradiation dose shows that the model, in which the migration of implanted atoms in the fields of forcing out stresses are considered, gives most close agreement between the calculated data and experimental ones.
Alumina-Silicate Glass Interfacial Properties Probed by Micromechanical Testing Techniques
Authors: Zagrebelnya Andrey V. , Nelson John C. , Lilleodden Erica T. , Ramamurthy Sundar , Carter C. Barry 
Published: April 2011

AbstractMicromechanical properties of the interfaces between alumina and calcium-aluminosilicate (CAS) glasses were tested using various micro/nanoindentation techniques. The interfaces were produced by depositing continuous films of anorhtite (CaAl2Si2O8) onto single-crstal α-Al2O3 of two crystallographic orientations by pulsed-laser deposition (PLD).The mechanical behavior of the interfaces was examined using two different depthsensing indentation instruments. Three types of tests, namely indentation, microscratch, and in-situ indentation combined with atomic force microscopy (AFM) imaging were conducted using different operating modes. The deformation behavior observed for the indentations and microscratches has been correlated with irregularities observed in the load-displacement curves. In the first two cases, scanning electron microscopy (SEM) has been used to characterize the deformation structures associated with the deformed regions. The in-situ experiments allow force-displacement measurements and AFM imaging immediately before and after indentation. The preindent and postindent morphology of the surface could then be characterized.
Epitaxial Growth and Structure of Cubic and Pseudocubic Perovskite Films on Perovskite Substrates
Authors: Langjahr P. A. , Wagner T. , RÜhle M. , Lange F. F. 
Published: April 2011

AbstractCubic and pseudocubic perovskite films on perovskite substrates are used to study the influence of the lattice mismatch on the epitaxial growth of thin films on substrates of the same structure. For the growth of the films, a metalorganic decomposition route (MOD) using 2-ethylhexanoates and neodecanoates as precursors, was developed. The decomposition of the precursors was investigated with thermogravimetric analysis (TGA) and x-ray diffraction (XRD). The films were spin-coated on (001)-oriented SrTiO3- and LaAlO3-substrates, pyrolyzed and afterwards annealed between 600°C and 1200°C. XRD-nvestigations and conventional transmission electron microscopy (CTEM) show, that epitaxial films with the orientation relationship [100](001) film ║ [100](001) substrate can be grown. With XRD, it could be shown, that not only ternary oxide films (SrZrO3, BaZrO3and BaCeO3), but also perovskite solid solution films (SrTi0.5Zr0.5O3and BaCe0.5Zr0.5O3) can be prepared. Strong interdiffusion, detected by a shift of the film lattice parameter towards the substrate lattice parameter was found in SrZrO3- and BaZrO3-films on SrTiO3, annealed at temperatures above 1050°C. High resolution electron microscopy (HREM) studies of SrZrO3on SrTiO3show that a crystalline semicoherent interface with a periodical array of misfit dislocations is present.
Growth and Characterization of Pb-Based Ferroelectric Oxide Thin Films by Mocvd
Authors: Shimizu Masaru , Shiosaki Tadashi 
Published: April 2011

AbstractUsing the MOCVD process to produce Pb(Zr, Ti)O3 (PZT) thin films, control of the film stoichiometry and crystalline phase was achieved. The PZT films obtained showed good step coverage, 67%. Uniform PZT and PLZT thin films with a variation of film thickness of less than ±1.5% were successfully obtained on a 6–8 inch silicon wafer. For the evaluation of the crystallinity and epitaxial relationship of the PZT thin films, the total reflection X-ray diffraction (TRXD) method was used for the first time. Using TRXD, the in-plane orientations of PZT and Pt in PZT/Pt/MgO were evaluated. The growth mechanism of PbTiO3 and PZT thin films at the initial growth stage was also investigated using an atomic force microscope (AFM). The switching characteristics of PZT capacitors using Ir and IrO2 electrodes for memory device applications were also investigated and a PZT capacitor with no fatigue up to a switching cycle of 1011 was obtained.
Structural Control of Epitaxially Grown Sputtered Perovskite Thin Films
Authors: Wasa Kiyotaka , Sato Toshifumi , Adachi Hideaki , Setsune Kentaro , Trolier-McKinstry S. , Schlom Darrell G. 
Published: April 2011

AbstractThin films of perovskite Pb–Ti–O3 families were heteroepitaxially grown by sputtering on (0001)sapphire and/or (001)SrTiO (ST). These epitaxial films contained microstructures, although X–ray diffraction analysis suggested formation of single crystal phase with three dimentional crystal orientation. Their microstructures were studied by the electron microscopy, atomic force microscopy, and spectroscopic ellipsometry so as to find factors which influence the formation of the microstructure. It was found that the orientation of the substrate surface and the chemical composition of adatoms during initial film growth strongly affected the formation of the microstructures. Sputtered PbTiO3 (PT) thin films under a stoichiometric condition on a miscut(001) ST(miscut 1.7 degree) realized the growth of continuous single crystal thin films of 10–100nm thick with extremely smooth surface with surface roughness less than 3nm. Deposition on a miscut substrate under a stoichiometric condition is essential to make continuous thin films of perovskite of single crystal phase.
Homo and Heteroepitaxial Growth of LiTaO3 and LiNbO3 by Mbe
Authors: Sitar Z. , Gitmans F. , Liu W. , Günter P. 
Published: April 2011

AbstractThin films and superlattices of LiTaO3 and LiNbO3 were grown on (0001) LiTaO3 and LiNbO3 wafers by molecular beam epitaxy. Solid sources were employed for the evaporation of Li, Ta, and Nb while oxygen was activated in an ECR plasma source. Samples were completely oxidized during the growth as confirmed by quantitative surface analyses. Crystalline films were obtained on both substrates at a growth rate of 0.1 nm/s and substrate temperature of 900°C. Films were caxis oriented but showed in-plane 60° rotational domains. Superlattice structure with a bilayer period of 10 nm was grown on LiNbO3. It showed well defined interfaces and appeared to be strained.
Optical Properties of Epitaxial Plt Thin Films
Authors: Kim Y. , Erbil A. , Boatner L. A. , Steingart L. , Mensah T. , Hiamang S. 
Published: April 2011

AbstractMetalorganic chemical vapor deposition (MOCVD) was used to prepare epitaxial or highly oriented PLT (Pb1-xLaxTiO3) thin films with x in the range of 0.21 to 0.34. The growth of PLT films resulted in three-dimensional epitaxial heterostructures on (100) surface of the MgO and the KTaO3 substrates. The PLT film grown on the KTaO3 (100) substrate has a significantly lower minimum channeling yield compared to that on the MgO (100) substrate because of the smaller lattice mismatch. The thickness and the refractive indices in the wavelength range of 435 to 1,523 nm were measured by the prism coupling method. The measured film thickness of 570 nm was in good agreement with that from RBS measurements. The refractive index of PLT film is smaller than that of PbTiO3, its difference at 632.8 nm is about 2.5 %. The dispersion of the refractive index was well fitted to a Sellmeier dispersion formula.