bluuebunny/crossref_metadata_2025_split huggingface dataset:
Phylodynamics of Infectious Disease Epidemics
Authors: Volz Erik M , Kosakovsky Pond Sergei L , Ward Melissa J , Leigh Brown Andrew J , Frost Simon D W 
Published: September 2009

AbstractWe present a formalism for unifying the inference of population size from genetic sequences and mathematical models of infectious disease in populations. Virus phylogenies have been used in many recent studies to infer properties of epidemics. These approaches rely on coalescent models that may not be appropriate for infectious diseases. We account for phylogenetic patterns of viruses in susceptible–infected (SI), susceptible–infected–susceptible (SIS), and susceptible–infected–recovered (SIR) models of infectious disease, and our approach may be a viable alternative to demographic models used to reconstruct epidemic dynamics. The method allows epidemiological parameters, such as the reproductive number, to be estimated directly from viral sequence data. We also describe patterns of phylogenetic clustering that are often construed as arising from a short chain of transmissions. Our model reproduces the moments of the distribution of phylogenetic cluster sizes and may therefore serve as a null hypothesis for cluster sizes under simple epidemiological models. We examine a small cross-sectional sample of human immunodeficiency (HIV)-1 sequences collected in the United States and compare our results to standard estimates of effective population size. Estimated prevalence is consistent with estimates of effective population size and the known history of the HIV epidemic. While our model accurately estimates prevalence during exponential growth, we find that periods of decline are harder to identify.
A Molecular-Cytogenetic Method for Locating Genes to Pericentromeric Regions Facilitates a Genomewide Comparison of Synteny Between the Centromeric Regions of Wheat and Rice
Authors: Qi Lili , Friebe Bernd , Zhang Peng , Gill Bikram S 
Published: September 2009

Abstract
Centromeres, because of their repeat structure and lack of sequence conservation, are difficult to assemble and compare across organisms. It was recently discovered that rice centromeres often contain genes. This suggested a method for studying centromere homologies between wheat and rice chromosomes by mapping rice centromeric genes onto wheat aneuploid stocks. Three of the seven cDNA clones of centromeric genes from rice centromere 8 (Cen8), 6729.t09, 6729.t10, and 6730.t11 which lie in the Cen8 kinetochore region, and three wheat ESTs, BJ301191, BJ305475, and BJ280500, with similarity to sequences of rice centromeric genes, were mapped to the centromeric regions of the wheat group-7 (W7) chromosomes. A possible pericentric inversion in chromosome 7D was detected. Genomewide comparison of wheat ESTs that mapped to centromeric regions against rice genome sequences revealed high conservation and a one-to-one correspondence of centromeric regions between wheat and rice chromosome pairs W1-R5, W2-R7, W3-R1, W5-R12, W6-R2, and W7-R8. The W4 centromere may share homology with R3 only or with R3 + R11. Wheat ESTs that mapped to the pericentromeric region of the group-5 long arm anchored to the rice BACs located in the recently duplicated region at the distal ends of the short arms of rice chromosomes 11 and 12. A pericentric inversion specific to the rice lineage was detected. The depicted framework provides a working model for further studies on the structure and evolution of cereal chromosome centromeres.
Occupational Therapy Home Programs for Cerebral Palsy: Double-Blind, Randomized, Controlled Trial
Authors: Novak Iona , Cusick Anne , Lannin Natasha 
Published: September 2009

OBJECTIVE: The goal was to assess the effectiveness of an occupational therapy home program (OTHP), compared with no OTHP, with respect to function and parent satisfaction with child function, participation, goal attainment, and quality of upper limb skill in school-aged children with cerebral palsy.METHODS: Thirty-six children with cerebral palsy (mean age: 7.7 years; male: 69%; Gross Motor Function Classification System: level I, 47%; level II, 14%; level III, 16%; level IV, 7%; level V, 16%; spasticity, 85%; dyskinesia, 14%; ataxia, 3%) were randomly and equally assigned to OTHPs for 8 or 4 weeks or to no OTHP. The primary end point was Canadian Occupational Performance Measure scores 8 weeks after baseline. Secondary measures were recorded at 4 and 8 weeks.RESULTS: Eight weeks of OTHP produced statistically significant differences in function and parent satisfaction with function, compared with no OTHP. Parents in the 4-week OTHP group did not discontinue use at 4 weeks, as instructed, and continued for 8 weeks; results demonstrated statistically significant differences, compared with no OTHP. There was no difference in primary or secondary end point measures between intervention groups.CONCLUSION: Pediatricians can advise families that OTHPs developed with a collaborative, evidence-based approach and implemented by parents at home were clinically effective if implemented 17.5 times per month for an average of 16.5 minutes per session.
Monolayer Film of Gold Nanoparticles on a 3 inch or Larger Silicon Wafer
Authors: Martin Matthew N. , Eah Sang-Kee 
Published: September 2009

ABSTRACTWe chemically synthesized charged gold nanoparticles coated with hydrophobic organic molecules, which are stable in hexane but unstable in toluene. If a hexane droplet with charged gold nanoparticles is mixed with a larger toluene droplet, they immediately float to the airtoluene interface forming a monolayer of close-packed gold nanoparticles. The monolayer can be deposited to any substrate simply by the solvent molecules' evaporation with no limit in size and without using any sophisticated instrument. As a demonstration, we fabricated a very large monolayer of close-packed gold nanoparticles covering the whole surface of a 3 inch silicon wafer. We further showed that excess organic ligand molecules do not affect the charged gold nanoparticles' property of floating to and forming a monolayer at the air-toluene interface. However, these very slowly evaporating molecules remain on a substrate, affect the two-dimensional ordering, and significantly reduce the contrast in scanning electron microscopy.
Fabrication of PLZT Film-on-Foil Dielectric Sheets for Embedded Passives
Authors: Ma Beihai , Narayanan Manoj , Balachandran U. 
Published: September 2009

ABSTRACTFerroelectric film-on-foil capacitors hold special promise to replace discrete passive components in the development of electronic devices that require greater performance and smaller size. We have deposited Pb0.92La0.08Zr0.52Ti0.48O3(PLZT) films on base metal foils to form film-on-foil capacitor sheets that can be embedded into printed circuit boards. The rootmean-square surface roughness was determined to be ≍3 nm for 1.15-μm-thick PLZT films on LaNiO3-buffered Ni foils. The following dielectric properties were measured: relative permittivity of ≍1300 and dielectric loss (tan δ) of ≍0.05, leakage current density of 6.6 × 10−9A/cm2at 25°C and 1.4 × 10−8A/cm2at 150°C, and mean breakdown strength >2.5 MV/cm. A remnant polarization (Pr) of ≍33 μC/cm2and coercive field strength (Ec) of ≍50 kV/cm were observed with a maximum voltage of 300 V applied during the P-E loop measurement. The energy storage capability of the dielectric film is ≍45 J/cm3.
Novel Hf and La Formamidinates for ALD Application
Authors: Li Huazhi , Shenai Deo V 
Published: September 2009

AbstractHfO2 is a promising dielectric for alternative high-k gate dielectrics and DRAM capacitor applications because of its high dielectric constant, excellent thermal stability and compatibility with Si processing. Particularly atomic layer deposition (ALD) is suitable as a deposition tool for gate dielectrics as well as capacitor dielectrics due to its excellent conformity and precise thickness control. In order to achieve ideal ALD performance, it is critical to have appropriate precursors. In order to achieve ideal ALD performance, it is critical to use appropriate enabling precursors. So far, Tetrakisethylmethylamidohafnium (TEMAHf) has been considered as one of the most promising precursors due to its good physical properties. However, this precursor has relatively low thermal stability, which has often become a drawback to ALD process for HfO2. To circumvent the decomposition issues of TEMAHf during ALD deposition, often low process temperatures have been used that lead to less dense films and high level of carbon contamination. In order to overcome these challenges, the novel hafnium formamidinate (Hf-FAMD) precursor is developed as an alternate Hf source at Dow Electronic Materials. Following our success with formamidinate platform in previously reported novel lanthanum formamidinate (La-FAMD) source, this new precursor also exhibits high thermal stability and high reactivity towards water and ozone. In this work, we report, for the first time, comparative studies with TEMAHf and novel Hf-FAMD source, e.g. Hf-FAMD exhibits acceptable vapor pressure (> 0.1 Torr at 100 °C) similar to that of TEMAHf, and higher thermal stability than TEMAHf, thus leading to high quality ALD films. We also present the crystal structure of La-FAMD, elucidated by X-Ray Crystallography, and physical properties of novel Hf-FAMD relevant to ALD.
Thermal Stability of GdScO3 Dielectric Films Grown on Si and InAlN/GaN Substrates
Authors: Fröhlich Karol , Vincze Andrej , Dobročka Edmund , Hušeková Kristina , Čičo Karol , Uherek Frantisek , Lupták Roman , Ťapajna Milan , Machajdík Daniel 
Published: September 2009

AbstractWe present analysis of thermal stability of thin GdScO3 films grown on silicon and InAlN/GaN substrates. The GdScO3 films were prepared by liquid injection metal organic chemical vapor deposition at 600 °C. The films were processed after deposition by rapid thermal annealing in nitrogen ambient at 900, 1000 and 1100 °C during 10 s. In addition, annealing of the GdScO3 films on InAlN/GaN substrate at 700 °C during 3 hours was performed. The samples were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR) and time-of-flight secondary ion mass spectroscopy (ToF SIMS). GIXRD confirmed that the as-deposited GdScO3 films were amorphous. Recrystallization of the films on both substrates occurred at 1100 °C. ToF SIMS depth profile of the films annealed at 1000 °C indicated strong reaction of the GdScO3 film with the Si substrate. For the InAlN/GaN substrate rapid thermal annealing at 900 °C induced diffusion of the In and Al atoms into the top GdScO3 layer. Thermal treatment at 700 °C for 3 hours presents upper limit of the acceptable thermal budget for the GdScO3/InAlN interface.
Ligand Structure Effect on A Divalent Ruthenium Precursor for MOCVD
Authors: Kawano Kazuhisa , Kosuge Hiroaki , Oshima Noriaki , Arii Tadashi , Sawada Yutaka , Funakubo Hiroshi 
Published: September 2009

AbstractThermal properties of five divalent ruthenium precursors with three types of structures were examined by thermal analyses. Their volatilities and the relationships between their structure and thermal stability were compared by TG analysis. Precursor volatility was found to be inversely proportional to molecular weight. The DSC result showed that substituting a linear pentadienyl ligand for a cyclopentadienyl ligand decreased the thermal stability of a precursor and precursors could be liquefied by attaching an alkyl group longer than methyl group to a Cp ligand. As a result of TG-MS analyses for Ru(DMPD)(EtCp) and Ru(EtCp)2, 2,4-dimethyl-1,3-pentadiene was found to be a thermolysis product of Ru(DMPD)(EtCp) though no thermolysis products of Ru(EtCp)2were observed. These results show that the volatility and decomposition temperature of a divalent ruthenium precursor can be designed by adjusting the precursor's structure.
Investigating the Interfacial Properties of Hf-based/Si and SiO2/Si Gate Stacks
Authors: Tan Shiang Yu 
Published: September 2009

AbstractAs complementary metal–oxide–semiconductor (CMOS) devices are scaled down into nano-region, SiO2 dielectric is approaching its physical and electrical limits. Hafnium based oxides are the most promising materials as a replacement for conventional gate dielectrics, due to its much higher dielectric constant (high-k) and stability. The aims of work were to investigate the interface-related issues associating with Hf-based/Si and SiO2/Si gate stacks. The interfacial properties of dielectric oxide/Si were studied by stacking a different dielectric layer (SiO2, HfSiO, and HfO2) on Si substrate. We studied the electrical behavior of dielectric oxide/Si interface by leakage current density-voltage (J-V) and capacitance-voltage (C-V) measurement techniques. The effects of the post-deposition annealing (PDA) treatment on the interface charges of dielectric oxides were presented. We found that the PDA can effectively reduce trapping density and the leakage current, and eliminate hysteresis in the C–V curves. The X-ray photoelectron spectroscopy (XPS) was applied for studying the surface chemical bonding energy at different gate stack structures. The XPS analysis provides a better interpretation of the electrical property. As results, HfSiO films have exhibited a superior performance in terms of thermal stability and electrical characteristics.
FTIR study of copper agglomeration during atomic layer deposition of copper
Authors: Dai Min , Kwon Jinhee , Chabal Yves J. , Halls Mathew D. , Gordon Roy G. 
Published: September 2009

AbstractThe growth of of metallic copper by atomic layer deposition (ALD) using copper(I) di-sec-butylacetamidinate ([Cu(sBu-amd)]2) and molecular hydrogen (H2) on SiO2/Si surfaces has been studied. The mechanisms for the initial surface reaction and chemical bonding evolutions with each ALD cycle are inferred from in situ Fourier transform infrared spectroscopy (FTIR) data. Spectroscopic evidence for Cu agglomeration on SiO2 is presented involving the intensity variations of the SiO2 LO/TO phonon modes after chemical reaction with the Cu precursor and after the H2 precursor cycle. These intensity variations are observed over the first 20 ALD cycles at 185°C.
Integrated Capacitors with Nb2O5 Dielectric for Decoupling Applications
Authors: Jacob Susan , Schaper Leonard W. , Benamara Mourad 
Published: September 2009

AbstractAs electronic systems are scaling down further and further, there is the constant need to utilize all the board area with maximum efficiency. Since passive components occupy most of the space on boards, it is very important to scale them down. New techniques allow for “integrated” passives as opposed to their discrete counterparts. Integrated capacitors can be embedded within the substrate, leaving room for other components on the board surface. In order to improve the area efficiency of these integrated capacitors, researchers have formed multilayered capacitors in the past. This increases the capacitance density, but is time consuming and expensive due to too many process steps. With increased circuit density, a currently demonstrated dielectric, Ta2O5, could be replaced with a potential high-k dielectric that can store more charge in a smaller area than a capacitor with Ta2O5. Niobium pentoxide (Nb2O5) with k∼41 is an emerging dielectric for high-k capacitor applications. This paper investigates niobium pentoxide as a next generation high-k planar capacitor dielectric. Niobium pentoxide dielectric was formed by reactive sputtering and anodization. Dielectric characterization was done using X-ray photoelectron spectroscopy (XPS), Transmission Electron Microscopy (TEM), and Atomic Force Microscopy (AFM). Thin film planar capacitor structures were fabricated using Nb2O5 dielectric and electrically characterized. The results presented include dielectric material characterization, design, capacitance, and breakdown voltage measurements.
THz Pulse Spectroscopy of Dynamic Plasmas: A New Diagnostic Tool
Authors: Kolner Brian H. 
Published: September 2009

AbstractRapidly evolving plasmas represent a challenging environment for both study and control. Density, collision frequency and temperature fluctuations can change over orders of magnitude on time scales of one ns with spatial features less than one cm and thus are not amenable to conventional continuous-wave diagnostic techniques such as microwave or mm-wave interferometry. We have developed a new technique for studying plasmas undergoing rapid nonequilibrium changes that uses THz time-domain spectroscopy (THz-TDS) in conjunction with optical fluorescence imaging. The advantages of using THz pulses lie in the fact that the broad bandwidth of a THz pulse contains frequency components both above and below the plasma frequency allowing a single ps-duration pulse to carry away information about the complex path-integrated susceptibility. Transverse fluorescence gives us a model of the longitudinal plasma distribution and using a novel rms error-minimization technique we can recover the real and imaginary parts of the susceptibility with <5 mm spatial and, potentially, ps time resolution (we are currently limited by S/N considerations to averaging over several THz pulses and thus obtain 40 ns resolution). From this we obtain the electron density and collision frequency, spatially and temporally resolved, with dynamic range >103. The principle of this new technique will be discussed along with results on a pulsed DC-discharge plasma. We will also present some new ideas such as concurrent molecular spectroscopy and computed tomography.
Green Innovation in Energy: Product, Process and Business Innovation Gains for Competitive Advantage
Authors: Hullavarad Shiva S , HULLAVARAD NILIMA V , LAN PING 
Published: September 2009

AbstractThe paper addresses the �green innovation� in the non-fossil fuel energy industry. The objective of the study is to identify the changes in trends of non-fossil fuel energy industry demand, growth and opportunities. The study uses the databases such as patents, news events, income/financial statements to assess the company status and the track record of the industry. The research adopts the methodology of Innovation Radar (Sawhney, MIT Sloan Management Research, 2001) to assess the positioning of the dominant company and design in photovoltaic, geothermal and wind renewable energy industry. The study also summarizes the sustainable competitive advantages of some of the successful companies in the energy sector. This study correlates the gains in innovation tripartite (product, process, business) to the corporate competitive advantage. The companies selected in this study are based on the innovations brought to improve the product, process and business aspects and are evaluated in terms of market adaptability.
Ability to Control the Glass Transition Temperature of Amorphous Shape-Memory Polyesterurethane Networks by Varying Prepolymers in Molecular Mass as well as in Type and Content of Incorporated Comonomers
Authors: Zotzmann Joerg , Kelch Steffen , Alteheld Armin , Behl Marc , Lendlein Andreas 
Published: September 2009

AbstractThe need of intelligent implant materials for applications in the area of minimally invasive surgery leads to tremendous attention for polymers which combine degradability and shape-memory capability. Application of heat, and thereby exceeding a certain switching temperature Tsw, causes the device to changes its shape. The precise control of Tsw is particularly challenging. It was investigated in how far Tg, that can be used as Tsw, of amorphous polymer networks from star-shaped polyester macrotetrols crosslinked with a low-weight linker can be controlled systematically by incorporation of different comonomers into poly(rac-lactide) prepolymers. The molecular mass of the prepolymers as well as type and content of the comonomers was varied. The Tg could be adjusted by selection of comonomer type and ratio without affecting the advantageous elastic properties of the polymer networks.
Evaluation of Strata NSC and Codman Hakim adjustable cerebrospinal fluid shunts and their corresponding antisiphon devices
Authors: Arnell Kai , Koskinen Lars-Owe D. , Malm Jan , Eklund Anders 
Published: September 2009

Object
The authors investigated and compared the in vitro characteristics of 2 CSF shunts, the Strata NSC and the Codman Hakim, and their corresponding antisiphon devices (ASDs).

Methods
Six new CSF shunts and the corresponding ASDs for each model were tested in an automated, computerized experimental setup based on pressure regulation. Opening pressure accuracy, resistance, sensitivity to abdominal pressure, antisiphon effect, and the influence of different ASD positions were determined.

Results
In general the shunts performed according to the manufacturers' specifications. However, at the lowest setting, the opening pressure of the Strata NSC was close to 0, and in the Codman Hakim shunt, it was higher than specified. The resistance in the Codman Hakim shunt (5.4 mm Hg/ml/min) was much higher than that in the Strata NSC (3.6 mm Hg/ml/min). Abdominal pressure affected opening pressure in both valves. Positioning the Strata ASD above or below the ventricular catheter tip resulted in higher and lower opening pressures, respectively, than when it was placed in line with the catheter. The positioning of the Codman Hakim ASD did not influence the opening pressure.

Conclusions
Both CSF shunts work properly, but at the lowest setting the opening pressure of the Strata NSC was near 0 and in the Codman Hakim it was twice the manufacturer's specifications. The resistance in the Strata NSC was below the normal physiological range, and in the Codman Hakim device it was in the lower range of normal. The ASD did not change the shunt characteristics in the lying position and therefore might not do so in children. If this is the case, then a shunt system with an integrated ASD could be implanted at the first shunt insertion, thus avoiding a second operation and the possibility of infection.