bluuebunny/crossref_metadata_2025_split huggingface dataset:
A Patterned Conducting Polyaniline Layer on a Non-Conducting Polymer Matrix
Authors: Song Edward , Choi Jin-Woo 
Published: September 2011

ABSTRACTPolyaniline is one of the most studied conducting polymers and its properties have been used in many sensor applications including gas sensors and pH sensors. In this work, we present a method that is able to embed a conducting polyaniline film in a desired pattern onto a nonconducting polymer matrix. We have developed an embedded polyaniline film on a polydimethylsiloxane (PDMS) matrix using a cast molding technique. The polyaniline film was grown by electrochemically polymerizing polyaniline from an electrolyte containing sulfuric acid and aniline monomer. A three-electrode cell system was used with a standard Ag/AgCl reference electrode, a gold auxiliary electrode, and a patterned gold working electrode. After the polyaniline film was formed on the patterned working electrode, PDMS was poured atop and cured. Cured PDMS was then debonded along with the polyaniline film embedded on the PDMS layer or block. The gold layer of the working electrode can be patterned using a photolithography steps so that the designed pattern can be transferred by the polyaniline growth on the working electrode. The greenish color of the polyaniline film indicated that the embedded polyaniline was in the conducting state (emeraldine salt form) and the conductivity of the polyaniline has also been verified by applying a DC voltage across the film and measuring the current through the polyaniline layer. The measured conductivity of the PANi layer at room temperature was in the range of 4.5 ~ 4.6 S/m. The advantage of this technique is that the PDMS matrix holds the polyaniline in place while allowing the polyaniline film to undergo reversible doping/dedoping chemistry when electrolyte solution comes into contact with the surface of the film. The developed technology can be used for various chemical sensor applications, for example, a pH sensor or gas sensors where a flexible and all-polymer apparatus is needed.
Temperature-adaptive Insulation Based on Multicomponent Fibers of Various Cross-sections
Authors: DeCristofano Barry S. , Fossey Stephen A. , Welsh Elizabeth A. , Perry Jeffrey , Archambault Deana 
Published: September 2011

ABSTRACTWe have developed a thermal insulation based on bi-component fibers that adapts to its thermal environment, providing greater insulation at low temperatures than at warmer temperatures. The analysis of bi-metallic strips done by Timoshenko [1] for strips of rectangular cross-section concluded that “…curvature is proportional to the difference in elongation of the two metals and inversely proportional to the thickness of the strip.” We have extended Timoshenko’s formulation and applied it to bi-component fibers of circular and triangular cross-sections. In each case, the curvature resulting from the balance of the axial forces and bending moments has been brought into a standard form inversely proportional to (A+Bn+C/n) where n is the ratio of the moduli and A, B, and C are functions of the geometry of the two components. An important consequence of this result is that for any “n” there is a maximum curvature where (A+Bn+C/n) is a minimum. We have used the process of melt-spinning to produce fibers with circular and triangular cross-sections, varying the proportion of the two components. The polymers used have widely different coefficients of thermal expansion. These fibers spontaneously form mats at room temperatures. The experimentally measured thickness changes are in good agreement with the analytical results for fiber bending. The most effective samples to date change thickness by more than 1.5% per degree C (30% over a temperature range from approximately 20°C to 0°C).
Electron Phase Microscopy of Magnetic Fields in Ferromagnets and Superconductors
Authors: Tonomura Akira 
Published: September 2011

ABSTRACTHighly sensitive electron phase microscopy based on the Aharonov-Bohm (AB) effect principle has been used to observe microscopic distributions of magnetic fields in ferromagnets and superconductors. The observation examples include the unconventional behaviors of interlayer Josephson vortices in anisotropic layered high-Tc superconducting YBa2Cu3O7-δ (YBCO) thin films, which are produced when the applied magnetic field is greatly tilted to the layer plane, and the magnetic-field distributions of tiny magnetic heads for perpendicular recording and of colossal magnetoresistance (CMR) materials.
Influence of Heat Treatment on the Physical Transformations of Flint Used by Neolithic Societies in the Western Mediterranean
Authors: Roqué-Rosell J. , Torchy L. , Roucau C. , Lea V. , Colomban Ph. , Regert M. , Binder D. , Pelegrin J. , Sciau Ph. 
Published: September 2011

ABSTRACTThe Neolithic period Chassey culture in southern France from 4200 to 3500 Cal. BC developed a specialized lithic technology for flint bladelets that used a heating process as an essential part of the production. Experimental archaeology demonstrated that the heating should take place at low temperature somewhere around 250°C. To identify and quantify the physical transformations of flint at low temperature, laboratory and synchrotron experiences have been carried out on a set of heated Barremo-Bedoulian flint samples. According to our measurements, this flint consists of a nanocrystalline matrix of quartz and moganite. Evolution of mesoporous structure was observed during heat treatment. The flint transformed between 200-300°C, resulting in a reduction in the size and volume of porosity. The densification of flint is linked to changes on the nanocrystalline grain boundaries, and it is thought to have a direct impact on the improved mechanical properties from the Chassey culture lithic productions.
Flash-Lamp-Induced Lateral Solidification of Thin Si Films
Authors: Omori K. , Ganot G.S. , Chung U.J. , Chitu A.M. , Limanov A.B. , Im James S. 
Published: September 2011

ABSTRACTIn this paper we show that a flash lamp can be employed to induce controlled lateral solidification of a-Si thin films. Specifically, a dual xenon-arc-lamp-based system was utilized to induce location-controlled complete melting by shaping the incident beam using a contact mask. The resulting laterally solidified microstructure consisted of exceptionally long grains (~10s to ~100s of μm) that were relatively free of intragrain-defects. With further development and optimization, the approach may lead to cost-effective/high-throughput processes and systems that can capture and enhance the advantages of laser-based/melt-mediated crystallization techniques.
Flexible, Lightweight, Amorphous Silicon Based Solar Cells on Polymer Substrate for Space and Near-Space Applications
Authors: Beernink K. , Banerjee A. , Yang J. , Lord K. , Liu F. , DeMaggio G. , Pietka G. , Worrel C. , Guha S. 
Published: September 2011

ABSTRACTUnited Solar Ovonic has leveraged its history of making amorphous silicon solar cells on stainless steel substrates to develop amorphous silicon alloy (a-Si:H)-based solar cells and modules on ∼25 μm thick polymer substrate using high-throughput roll-to-roll deposition technology for space and near-space applications. The solar cells have a triple-junction a-Si:H/a-SiGe:H/a-SiGe:H structure deposited by conventional plasma enhanced CVD (PECVD) using roll-to-roll processing. The cells have distinct advantages in terms of high specific power (W/kg), high flexibility, ruggedness, rollability for stowage, and irradiation resistance. The large area (23.9 cm x 32.1 cm) individual cells manufactured in large quantity can be readily connected into modules and have achieved initial, 25 °C, AM0 aperture-area efficiency of 9.8% and initial specific power of 1200 W/kg. We have conducted light-soak studies and measured the temperature coefficient of the current-voltage characteristics to determine the stable values at an expected operating temperature of 60 °C. The stable total-area efficiency and specific power at 60 °C are 7.2% and 950 W/kg, respectively. In this paper, we review the challenges and progress made in development of the cells, highlight some applications, and discuss current efforts aimed at improving performance.
Properties of amorphous silicon passivation layers for all back contact c-Si heterojunction solar cells
Authors: Zhang Lulu , Das Ujjwal , Appel Jesse , Hegedus Steve , Birkmire Robert 
Published: September 2011

ABSTRACTLow temperature deposited Interdigitated All Back Contact a-Si:H/c-Si Heterojunction (IBC-SHJ) devices are a promising approach for high efficiency, low cost solar cells on thin wafers. Thin intrinsic a-Si:H films (i-a-Si:H) deposited below 300°C provide excellent surface passivation and high Voc. However, the optical properties of a-Si:H layers and electronic band alignment at the heterointerface are critical to reduce optical losses and transport barriers in IBC-SHJ solar cells. At the front illumination surface, a wide band gap (Eg) i-a-Si:H layer with good passivation is desirable for high Voc and Jsc while at the rear surface a narrower Eg i-a-Si:H layer with good passivation is required for higher FF and Voc as seen in 2D numerical simulation. Various substrate temperature, H2/SiH4 dilution ratio and plasma power conditions were explored to obtain i-a-Si:H with good passivation and desired Eg. All the deposited films are characterized by Variable Angle Spectroscopic Ellipsometry (VASE) to determine Eg and thickness and by Fourier Transform Infrared spectroscopy (FTIR) to estimate hydrogen content and microstructure factor. Passivation qualities are examined by quasi-steady state photoconductance (QSS-PC) measurement. The i-layer Eg, was varied in the range from ~1.65eV to 1.91eV with lifetime >1 ms. Lowest Eg is obtained just prior to the structure transition from amorphous to epitaxial-like growth. The FF of IBC-SHJ devices improved from 20% to 70% as Eg of the a-Si:H rear passivation layer decreased from 1.78 to 1.65 eV.
Thin Film Si Photovoltaic Devices on Photonic Structures Fabricated on Steel and Polymer Substrates.
Authors: Pattnaik S. , Chakravarty N. , Bhattacharya J. , Biswas R. , Slafer D. , Dalal V.L. 
Published: September 2011

ABSTRACTIn this paper, we report on the growth and fabrication of thin film Si photovoltaic devices on photonic structures which were fabricated on steel and PEN and Kapton substrates. Both amorphous Si and thin film nanocrystalline Si devices were fabricated. The 2 dimensional photonic reflector structures were designed using a scattering matrix theory and consisted of appropriately designed holes/pillars which were imprinted into a polymer layer coated onto PEN, Kapton and stainless steel substrates. The photonic structures were coated with a thin layer of Ag and ZnO. Both single junction and tandem junction (amorphous/amorphous and amorphous/nanocrystalline) cells were fabricated on the photonic layers. It was observed that the greatest increase in short circuit current and efficiency in these cells due to the use of photonic reflectors was in nanocrystalline Si cells, where an increase in current approaching 30% (compared to devices fabricated on flat substrates) was obtained for thin (∼ 1 micrometer thick i layers) films of nano Si deposited on steel structures. The photonic structures (which were nanoimprinted into a polymer) were shown to stand up to temperatures as large as 300 C, thereby making such structures practical when a steel (or glass) of kapton substrate is used. Detailed measurements and discussion of quantum efficiency and device performance for various photonic back reflector structures on steel, kapton and PEN substrates will be presented in the paper.
Analysis and Control of Plating Baths in the Electrodeposition of Copper Indium Gallium Selenide (CIGS) Films with Ion Chromatography
Authors: Kleiman-Shwarsctein Alan , Aksu Serdar , Cetiner Tuncay , Lastella Sarah , Pinarbasi Mustafa 
Published: September 2011

ABSTRACTCu(In,Ga)Se2(CIGS) is one of the most advanced absorber materials with conversion efficiencies reaching up to about 20%. Electrodeposition of CIGS precursors is highly attractive due to its low cost, efficient utilization of raw materials and scalability to high-volume manufacturing, however, a strict chemistry control of the plating baths is required in a manufacturing environment to ensure a consistent plating process with high yields. In the present study, we tested the use of ion chromatography (IC), for the quantitative analysis of both the cationic and anionic species in a variety of aqueous alkaline electroplating solutions we developed for the fabrication of CIGS precursors. Using ion chromatography we were able to precisely determine the concentrations of several key anions commonly employed in the plating baths including chloride, sulfate, selenite, selenate, tartrate, citrate, gluconate, and ethylenediaminetetraacetate. Our results indicated IC might not be a suitable method to determine the cationic concentrations for Cu, In, Ga ions when complexing species, such as ethylenediaminetetraacetate, are present in the electroplating solutions. We determined that inductively coupled plasma optical emission spectroscopy (ICP-OES) could be used instead for the precise determination of the cationic concentrations.
Organosiloxane Transparent Aerogels and Hierarchically Porous Monoliths
Authors: Kodera Yasunori , Hayase Gen , Kanamori Kazuyoshi , Nakanishi Kazuki , Hanada Teiichi 
Published: September 2011

ABSTRACTA transition of porous structures in monolithic poly(methylsilsesquioxane) (PMSQ, CH3SiO1.5) gels from uniform mesopores to hierarchical pore structures consisting of macro- and mesopores, has been investigated using a sol-gel system containing surfactant Pluronic F127. A broad variation of porous morphology is controlled by changing the concentration of F127. Sufficient concentrations of F127 inhibit the occurrence of macroscopic phase separation of hydrophobic PMSQ condensates and lead to well-defined mesoporous transparent aerogels with high specific pore volume. Mesopores are developed through microscopic phase separation of PMSQ colloid-surfactant complexes in the solvent. Macroscopic phase separation regulates well-defined macropores in the micrometer range on decreasing concentrations of F127, in which microscopic phase separation concurrently takes place in the PMSQ-rich gelling phase after the onset of macroscopic phase separation. Monolithic PMSQ gels with hierarchical macro- and mesopore structures are consequently obtained.
Polychloroprene: a new material for Dielectric Elastomer Actuators.
Authors: Waché Rémi , Risse Sebastian , Schulze Manuel , Kofod Guggi 
Published: September 2011

ABSTRACTDielectric Elastomer Actuators (DEAs) consist of an elastomeric layer sandwiched between two compliant electrodes. An electric field applied between the two electrodes will lead to a compression of the elastomer due to the Maxwell’s pressure. DEA can be used for many active applications such as pumps, muscles and so on, where the voltage drives the motion, but they can also operate inversely for energy harvesting or for sensor applications, when the displacement of charges due to a change in thickness is stored or detected. Energy harvesting systems like buoys using wave energy or shoe soles extracting energy from walking have been demonstrated. In this contribution we investigate polychloroprene (CR) as a new material for DEA and describe its potential for use in energy harvesting. To this end, a full characterization of the material properties was undertaken. We find that the very high permittivity combined with good mechanical properties makes this material a promising novel candidate for the energy harvesting application.
New Multilayer Architectures for Piezoelectric BaTiO3 Cantilever Systems
Authors: Vasta Giuseppe , Jackson Timothy J. , Bowen James , Tarte Edward J. 
Published: September 2011

ABSTRACTThe fabrication and characterization of released cantilevers in new multilayer thin films architectures is reported. In contrast to previous works, the cantilevers are produced without etching of the substrate and are based on lead free piezoelectric materials. The three architectures are: SrRuO3/BaTiO3/MgO/SrTiO3/YBa2Cu3O7, SrRuO3/BaTiO3/SrRuO3/YBa2Cu3O7 and SrRuO3/BaTiO3/SrRuO3/SrTiO3/YBa2Cu3O7. It is shown that the different architectures allow a choice of the orientation of the polar axis in piezoelectric layers, in plane (d33 mode) or out of plane (d31 mode). Both configurations may be utilized in piezoelectric energy harvesting devices. Released cantilevers with the above layer sequences have been produced with lengths ranging from, 100 μm to 250 μm. The residual stress after the release of the cantilevers produces an upward bending, the distance between the cantilever tips and the substrate varies between 20 μm and 45 μm. This distance would allow the sufficient vibration amplitude to enable the cantilevers to be used as micro-generators. Measurements of Young Modulus of the cantilevers and of polarization hysteresis loop are reported.
Recent Progress in Downsizing FeFETs for Fe-NAND Application
Authors: Van Hai Le , Takahashi Mitsue , Sakai Shigeki 
Published: September 2011

ABSTRACTSub-micrometer ferroelectric-gate field-effect transistors (FeFETs) of 0.56 μm and 0.50 μm gate lengths were successfully fabricated for Fe-NAND cells. Gate stacks of the FeFETs were Pt/SrBi2Ta2O9(SBT)/Hf-Al-O/Si. The gate stacks were formed by electron beam lithography and inductively coupled plasma reactive ion etching (ICP-RIE). Ti and SiO2 hard masks were used for the 0.56 μm- and 0.50 μm-gate FeFETs, respectively, in the ICP-RIE process. Steep SBT sidewalls with the angle of 85° were obtained by using the SiO2 hard masks while 76° sidewalls were shown using Ti hard masks. All fabricated FeFETs showed good electrical characteristics. Drain current hysteresis showed larger memory windows than 0.95 V when the gate voltages were swung between 1±5 V. The FeFETs showed stable endurance behaviors over 108 program/erase cycles. Drain current retention properties of the FeFETs were good so that the drain current on/off ratios did not show practical changes after 3 days.
Understanding the Role of Process Parameters on the Characteristics of Transition Metal Oxide RRAM/Memristor Devices
Authors: Long Branden , Li Yibo , Jha Rashmi 
Published: September 2011

ABSTRACTIn this report, we studied the role of the oxygen concentration in TiOx layer of Ni/TiOx/TiO2/Ni stack based 2-terminal resistive random access memory (RRAM) devices. The sample with oxygen deficient TiOx layer showed Schottky diode type J-V characteristics in the as-fabricated state while the sample with higher oxygen content in TiOx demonstrated MIM or back-to-back connected diode behavior. The Capacitance-Voltage (C-V) profiling was performed and doping density vs. depletion width characteristic was obtained. The conductance technique was implemented to study the interface state density. The RRAM type switching behavior of these samples was studied. The sample with high oxygen in TiOx showed filament based switching after electroforming while the sample with low oxygen in TiOx showed switching governed by the charge trapping.
WOx resistive memory elements for scaled Flash memories
Authors: Ghalamestani S. Gorji , Goux L. , Díaz-Droguett D.E. , Wouters D. , Lisoni J. G. 
Published: September 2011

ABSTRACTWe investigated the resistive switching behavior of WOx films. WOx was obtained from the thermal oxidation of W thin layers. The parameters under investigation were the influence of the temperature (450-500 °C) and time (30-220 s) used to obtain the WOx on the resistive switching characteristics of Si\W\WOx\Metal_electrode ReRAM cells. The metal top electrodes (TE) tested were Pt, Ni, Cu and Au. The elemental composition and microstructure of the samples were characterized by means of elastic recoil detection analysis (ERD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR).Electrical measurement of the WOx-based memory elements revealed bipolar and unipolar switching and this depended upon the oxidation conditions and TE selected. Indeed, switching events were observed in WOx samples obtained either at 450 °C or 500 °C in time windows of 180-200 s and 30-60 s, respectively. Pt and Au TE promoted bipolar switching while unipolar behavior was observed with Ni TE only; no switching events were observed with Cu TE. Good switching characteristics seems not related to the overall thickness, crystallinity and composition of the oxide, but on the W6+/W5+ ratio present on the WOx surface, surface in contact with the TE material. Interestingly, W6+/W5+ ratio can be tuned through the oxidation conditions, showing a path for optimizing the properties of the WOx-based ReRAM cells.
A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices
Authors: Bishop S.M. , Briggs B.D. , Leedy K.D. , Addepalli S. , Cady N.C. 
Published: September 2011

ABSTRACTMetal-insulator-metal (MIM) resistive switching devices are being pursued for a number of applications, including non-volatile memory and high density/low power computing. Reported resistive switching devices vary greatly in the choice of metal oxide and electrode material. Importantly, the choice of both the metal oxide and electrode material can have significant impact on device performance, their ability to switch, and the mode of switching (unipolar, bipolar, nonpolar) that results. In this study, three metal oxides (Cu2O, HfOx, and TiOx) were deposited onto copper bottom electrodes (BEs). Four different top electrode (TE) materials (Ni, Au, Al, and Pt) were then fabricated on the various metal oxides to form MIM structures. Devices were then characterized electrically to determine switching performance and behavior. Our results show that the metal TE plays a large role in determining whether or not the MIM structure will switch resistively and what mode of switching (unipolar, bipolar, or non-polar) is observed.
Improving the tribological properties of DLC (Fullerene-like) films grown by ECR-CVD with metal nanoparticles incorporation
Authors: Pardo Ainhoa , Gómez-Aleixandre Cristina 
Published: September 2011

ABSTRACTThin Me-DLC films with different metal contents have been deposited by ECR-CVD (Electron Cyclotron Resonance Chemical Vapour Deposition). Before the growth process, metal nanoparticles were scattered over the substrate surface by dipping it into a dispersion previously sonicated. The concentration of the dispersion (150, 300, 500 and 5000 ppm) controls the metal content into the carbon coating. The morphology of the deposited samples was analysed by SEM (Scanning Electron Microscopy). The metal content in the carbon films has been evaluated by SIMS (Secondary Ion Mass Spectroscopy). The incorporation of low amounts of metal nanoparticles into the hard carbon coating produces an outstanding improvement in the durability of the layer, as detected by pin-on-disc tests. For an optimum chromium content of 300 ppm of nanoparticles in the dispersion, the grown layer exhibits a noteworthy higher wear resistance respect to that of the DLC reference film. More precisely, in this case, the Cr-DLC coating undergoes ten times longer wear process than the reference DLC coating. However, it is important to indicate that in samples grown using more concentrated dispersions (> 300 ppm), a rapid deterioration of the coating is produced and short lifetimes have been detected, attributed to the large contribution of metal to the transfer layer.