bluuebunny/crossref_metadata_2025_split huggingface dataset:
Are herbicide‐resistant crops the answer to controlling Cuscuta?
Authors: Nadler‐Hassar Talia , Shaner Dale L , Nissen Scott , Westra Phill , Rubin Baruch 
Published: April 2009

AbstractBACKGROUND: Herbicide‐resistant crop technology could provide new management strategies for the control of parasitic plants. Three herbicide‐resistant oilseed rape (Brassica napus L.) genotypes were used to examine the response of attached Cuscuta campestris Yuncker to glyphosate, imazamox and glufosinate. Cuscata campestris was allowed to establish on all oilseed rape genotypes before herbicides were applied.RESULTS: Unattached seedlings of C. campestris, C. subinclusa Durand & Hilg. and C. gronovii Willd. were resistant to imazamox and glyphosate and sensitive to glufosinate, indicating that resistance initially discovered in C. campestris is universal to all Cuscuta species. Glufosinate applied to C. campestris attached to glufosinate‐resistant oilseed rape had little impact on the parasite, while imazamox completely inhibited C. campestris growth on the imidazolinone‐resistant host. The growth of C. campestris on glyphosate‐resistant host was initially inhibited by glyphosate, but the parasite recovered and resumed growth within 3–4 weeks.CONCLUSION: The ability of C. campestris to recover was related to the quality of interaction between the host and parasite and to the resistance mechanism of the host. The parasite was less likely to recover when it had low compatibility with the host, indicating that parasite‐resistant crops coupled with herbicide resistance could be highly effective in controlling Cuscuta. Published 2009 by John Wiley & Sons, Ltd.
Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing
Authors: Gargallo‐Caballero R. , Guzmán A. , Hopkinson M. , Ulloa J. M. , Hierro A. , Calleja E. 
Published: April 2009

AbstractIn this letter we demonstrate that the N incorporation into (Ga)InAsN quantum dots (QDs), grown on GaAs (100) by radio‐frequency (RF) plasma assisted molecular beam epitaxy (MBE), is enhanced as the Ga content increases up to 30% and decreases for Ga contents higher than 30%. Thus, this effect exhibits a maximum N incorporation with a Ga content of 30%. Two sets of (Ga)InAsN QDs samples have been grown under the same growth conditions but with different N contents in one of them and with different Ga concentration in the other set. Optical analysis using Photoluminescence (PL) measurements of the as‐grown and post growth rapid thermal annealed samples have been performed. The experimental results show a clear increase of the blueshift with the N concentration as occurred in dilute nitride quantum well (QW) structures. PL peak emission wavelength as high as 1.55 μm has been obtained from QDs capped with GaAs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Performances comparison of Si and GaAs based resonant tunneling diodes
Authors: Buccafurri Emanuela , Clerc Raphael , Calmon Francis , Pala Marco , Poncet Alain , Ghibaudo Gerard 
Published: April 2009

AbstractOn the basis of an original, physically based analytical model, I‐V characteristic of the resonant tunneling diode structure (RTD) has been studied. Comparing AlAs/GaAs heterostructure RTD and Si‐based RTD of same dimensions, it turns out that the performances of GaAs devices are superior. However, similar performances can be achieved in the HfO2/Si RTD, by a strong reduction in barrier tunnel thickness and width well. In conclusion, an extreme shrinking of Hf02/Si structure dimensions can offer, in principle, RTD performances comparable to conventional AlAs/GaAs heterostructures. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Growth of In‐doped ZnO films by metalorganic chemical vapor deposition on GaN(0001) templates
Authors: Ben‐Yaacov Tammy , Ive Tommy , Van de Walle Chris G. , Mishra Umesh K. , Speck James S. , Denbaars Steven P. 
Published: April 2009

AbstractWe investigated the properties of indium‐doped zinc oxide layers grown by metalorganic chemical vapor deposition on semi‐insulating GaN(0001) templates. Specular and transparent films with n‐type carrier concentrations up to 1.82 × 1019 cm–3, as determined by hall measurements, were grown. An undoped film grown under the same conditions had carrier concentration 5.4 × 1017 cm–3. An interesting trend was observed for carrier concentration dependence on In precursor flow. For low In flows, carrier concentration increased with TMI flow until a peak was reached for a TMI flow of 5 standard cubic centimetres per minute. Beyond this flow, carrier concentration decreased with increasing TMI flow rate. A sheet resistance as low as 185 ohm/sq was achieved for the indium‐doped films, which is a significant decrease from the undoped ZnO film which had a sheet resistance of 3100 ohm/sq. The results of this In doping study show that In is an effective dopant for controlling the n‐type conductivity of ZnO. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology
Authors: Singisetti Uttam , Wistey Mark A. , Burek Gregory J. , Arkun Erdem , Baraskar Ashish K. , Sun Yanning , Kiewra Edward W. , Thibeault Brian J. , Gossard Arthur C. , Palmstrøm Chris J. , Rodwell Mark J. W. 
Published: April 2009

AbstractInGaAs is a promising alternative channel material to Si for sub‐22 nm node technology because of its low electron effective mass (m*) hence high electron velocities. We report a gate‐first MOSFET process with self‐aligned source/drain formation using non‐selective MBE re‐growth, suitable for realizing high performance scaled III‐V MOSFETs. A W/Cr/SiO2 gate stack was defined on thin (4 nm/2.5 nm) InGaAs/InP channel by an alternating selective dry etch technique. A 5 nm Al2O3 layer was used as gate dielectric. An InAlAs bottom barrier provided vertical confinement of the channel. An in‐situ H cleaning of the wafer leaves an epi‐ready surface suitable for MBE or MOCVD regrowth.Source/Drain region were defined by non‐selective MBE regrowth and in situ molybdenum contacts. First generation of devices fabricated using this process showed extremely low drive current of 2 μA/μm. The drive current was limited by an extremely high source resistance. A regrowth gap between source/drain and gate was the cause for high source resistance. The gap in the regrowth was because of low growth temperature (400 °C). A modified high temperature growth technique resolved the problem. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
An over 100 W AlGaN/GaN enhancement‐mode HEMT power amplifier with piezoelectric‐induced cap structure
Authors: Ohki Toshihiro , Kikkawa Toshihide , Kanamura Masahito , Imanishi Kenji , Makiyama Kozo , Okamoto Naoya , Joshin Kazukiyo , Hara Naoki 
Published: April 2009

AbstractA novel piezoelectric‐induced cap structure in an AlGaN/GaN high electron mobility transistor (HEMT) was developed for enhancement‐mode (E‐mode) operation with high maximum drain current density (Idmax), high breakdown voltage (BVgd) and small current collapse. Our developed cap structure consists of a thin GaN/AlN/ GaN triple‐layer, which reduces the sheet resistance (Rsh) due to conduction band bending. The threshold voltage (Vth) is +0.25 V with a high Idmax of 520 mA/mm, a high BVgd of 336 V and small current collapse by using the developed cap structure and a gate recess technique. The single‐chip AlGaN/GaN E‐mode HEMT amplifier achieved a high output power of 126 W at 2.5 GHz with improved distortion characteristics. This is the first report of an AlGaN/GaN E‐mode HEMT with an output power of over 100 W. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Advanced mHEMT MMICs for 220 GHz high‐resolution imaging systems
Authors: Chartier Sébastien , Tessmann Axel , Leuther Arnulf , Weber Rainer , Kallfass Ingmar , Schlechtweg Michael , Stanko Stephan , Essen Helmut , Ambacher Oliver 
Published: April 2009

AbstractThe development of advanced millimeter‐wave monolithic integrated circuits for application in active and passive high‐resolution imaging systems operating beyond 200 GHz is presented. A wideband 210 GHz Low Noise Amplifier has been successfully realized using one of our three metamorphic high electron mobility transistor (mHEMT) technologies in combination with grounded coplanar circuit topology (GCPW). Additionally, a 200 GHz voltage controlled oscillator (VCO) MMIC demonstrating good output power over a wide bandwidth was fabricated, using our 100 nm mHEMT technology. Finally, a high resolution 220 GHz radiometer was realized and shows very promising performance. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode
Authors: Susaki Wataru , Kakuda Shinichi , Igawa Takahiro , Inada Takeshi , Tomioka Akihiro 
Published: April 2009

AbstractThe band offsets and subband levels in a double quantum well layer for a 660nm‐Ga0.4In0.6P/(Al0.5Ga0.5)0.5In0.5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schrödinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Preface: Phys. Status Solidi C 6/4
Authors: Cho Yong‐Hoon , Kim Eun Kyu , Guest Editors  
Published: April 2009

AbstractThe Proceedings contained in this issue comprise all peer‐reviewed scientific papers presented at the 5th International Conference on Semiconductor Quantum Dots (QD 2008). The conference was held in Gyeongju, Korea, from 11 to 16 May 2008. Gyeongju, the capital of the Shilla Kingdom (BC 57–AD 935) for almost a thousand years, was designated as one of the World Cultural Heritage sites by UNESCO in 1995. QD 2008 was the fifth conference in a successful series, first held in Munich (2000) and then continued in Tokyo (2002), Banff (2004), and Chamonix‐Mont Blanc (2006). QD 2008 has enjoyed a record attendance by more than 300 participants from 27 countries. QD 2008 selected 304 papers for oral and poster presentation among contributed papers from all over the world. In these proceedings, we have included 87 papers which were presented at QD 2008. The present proceedings provide an excellent up‐to‐date overview over novel fabrication techniques of quantum dots, structural and electronic properties, optical and transport properties, magnetic and spin properties, as well as applications of quantum dots.We would like to express our sincere thanks to all the participants and speakers, as well as all to the sponsors and public agencies for their help in making QD 2008 successful. We also express our gratitude to all organizing and program committee members for making a great contribution to the conference, as well as all publication committee members and the referees for their careful reading and scientific evaluation of the papers appearing in these proceedings. Finally, we also express our appreciation to Stefan Hildebrandt, Julia Hübner, and Irina Juschak for their great editorial assistance and to physica status solidi for the rapid publication of the proceedings (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Inhibitory effect of total lignan from Fructus Arctii on aldose reductase
Authors: Xu Zhaohui , Yang Hongzhou , Zhou Mingmei , Feng Yi , Jia Wei 
Published: April 2009

AbstractThe potent inhibitory effect of the total lignan from the plant Fructus Arctii on aldose reductase was observed, suggesting its preventive potential on diabetic complications upon long term administration. Copyright © 2009 John Wiley & Sons, Ltd.
Orbital‐free effective embedding potential: Density‐matrix functional theory case
Authors: Pernal Katarzyna , Wesolowski Tomasz A. 
Published: April 2009

AbstractMinimization of the Hohenberg–Kohn total energy functional EHK [ρ] in the presence of the constraint ρ − ρB ≥ 0, where ρB is some arbitrarily chosen electron density comprising integer number of electrons is considered. To access better numerical accuracy of approximations to EHK [ρ] in practice, the search for optimal ρ − ρB is performed using auxiliary quantities such as orbitals of a reference system of non‐interacting electrons [Wesolowski and Warshel, J Phys Chem 1993, 97, 8050] or a wavefunction‐like object corresponding to interacting electrons [Wesolowski, Phys Rev A 2008, 77, 012504]. In both cases, the condition ρ − ρB ≥ 0 leads to a local potential (orbital‐free effective embedding potential) of the same general form if expressed by means of universal density functionals. In this work, it is shown that the same local potential is obtained if the search for optimal ρ − ρB is performed among one‐particle reduced density matrices. © 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009
Multipartitioning Møller–Plesset perturbation theory: Size‐extensivity at third order and symmetry conservation
Authors: Rolik Zoltán , Szabados Ágnes 
Published: April 2009

AbstractMultipartitioning multireference many‐body perturbation theory (Zaitevskii and Malrieu, Chem. Phys. Lett. 1995, 233, 597) is investigated with regard to symmetry and size‐extensivity. We show that the spin‐adapted formulation suffers from spatial symmetry breaking and propose a general symmetry‐conserving zero‐order Hamiltonian. We analyze size‐extensivity of various partitionings at the third order and find that extensivity holds if one‐particle quantities in the zero‐order Hamiltonian are properly chosen. In particular, third order of the spin‐adapted and general symmetry‐adapted theory prove to be extensive. © 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009
Pt(II)‐ion hydration: Structural and vibrational characteristics from theory and experiment
Authors: Stirling András , Bakó Imre , Kocsis László , Hajba László , Mink János 
Published: April 2009

AbstractIR, Raman measurements, and ab initio molecular dynamics simulations have been carried out to describe and understand the structural and dynamic behavior of hydrated Pt2+ ion in water. The experiments have revealed strong red‐shifted O–H bond frequencies and blue‐shifted ligand deformation bands. The simulations have showed that the presence of the doubly charged cation and the enhanced hydrogen bond formations between the first and second shells result in significant structural changes in the first solvation shell, which in turn yield the characteristic shifts in the vibrational spectra. The weakening of the ligand O–H bonds and the strengthened hydrogen‐bonds around the cation can be accounted for as the result of the strong Coulombic field of the Pt(II)‐ion. © 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009
Quaternion‐based visual servo control in the presence of camera calibration error
Authors: Hu Guoqiang , Gans Nicholas , Dixon Warren 
Published: April 2009

AbstractVisual servo control systems use information from images along with knowledge of the optic parameters (i.e. camera calibration) to position the camera relative to some viewed object. If there are inaccuracies in the camera calibration, then performance degradation and potentially unpredictable response from the visual servo control system may occur. Motivated by the desire to incorporate robustness to the camera calibration, different control methods have been developed. Previous adaptive/robust controllers (especially for six degree‐of‐freedom camera motion) rely heavily on properties of the rotation parameterization to formulate state estimates and a measurable closed‐loop error system. All of these results are based on the singular axis–angle parameterization. Motivated by the desire to express the rotation by a non‐singular parameterization, efforts in this paper address the question:Can state estimates and a measurable closed‐loop error system be crafted in terms of the quaternion parameterization when the camera calibration parameters are unknown? To answer this question, a contribution of this paper is the development of a robust controller and closed‐loop error system based on a new quaternion‐based estimate of the rotation error. A Lyapunov‐based analysis is provided which indicates that the controller yields asymptotic regulation of the rotation and translation error signals given a sufficient approximate of the camera calibration parameters. Simulation results are provided that illustrate the performance of the controller for a range of calibration uncertainty. Copyright © 2009 John Wiley & Sons, Ltd.
Catalytic Microtubular Jet Engines Self‐Propelled by Accumulated Gas Bubbles
Authors: Solovev Alexander A. , Mei Yongfeng , Bermúdez Ureña Esteban , Huang Gaoshan , Schmidt Oliver G. 
Published: April 2009

AbstractStrain‐engineered microtubes with an inner catalytic surface serve as self‐propelled microjet engines with speeds of up to ≈2 mm s−1 (approximately 50 body lengths per second). The motion of the microjets is caused by gas bubbles ejecting from one opening of the tube, and the velocity can be well approximated by the product of the bubble radius and the bubble ejection frequency. Trajectories of various different geometries are well visualized by long microbubble tails. If a magnetic layer is integrated into the wall of the microjet engine, we can control and localize the trajectories by applying external rotating magnetic fields. Fluid (i.e., fuel) pumping through the microtubes is revealed and directly clarifies the working principle of the catalytic microjet engines.
Freestanding 3D Supramolecular Particle Bridges: Fabrication and Mechanical Behavior
Authors: Ling Xing Yi , Phang In Yee , Schönherr Holger , Reinhoudt David N. , Vancso G. Julius , Huskens Jurriaan 
Published: April 2009

AbstractFreestanding particle bridges with controlled composition and macroscopic robustness are demonstrated by the use of supramolecular nanoparticle assembly. Self‐assembly of nanoparticles, templating, and supramolecular glue infiltration are combined to form stable and ordered three‐dimensional polystyrene particle composites on a polydimethylsiloxane stamp. Freestanding hybrid polystyrene nanoparticle bridges are obtained by transfer printing of the hybrid structures onto topographically patterned substrates via host–guest interactions. The mechanical robustness and rigidity of the particle bridges can be controlled by manipulating the layer‐by‐layer cycles of supramolecular glues of gold nanoparticles and dendrimers. Atomic force microscopy‐based microbending results, in particular the location and force‐dependent deflection behavior, confirm that the particle bridge fulfills the classical supported‐beam characteristics. As estimated from classical beam theory, the bending moduli of the particle bridges vary between 0.8 and 1.1 GPa, depending on the degree of filling by the supramolecular glues. Failure analysis on the particle structure indicates linear elastic behavior and a plastic deformation upon failure.
Comprehend and analyze knowledge networks to improve software evolution
Authors: Del Rosso Christian 
Published: April 2009

AbstractWhen a set of people are connected by a set of meaningful social relationships we talk of a social network. A social network represents a social structure and the underlying structural patterns can be used to analyze and comprehend how people relate to each other and their emergent behavior as a group. Developing software is fundamentally a human activity. Developers cooperate and exchange knowledge and information, creating in fact, a particular type of social network that we call knowledge network. In this paper we investigate knowledge networks in software development teams by applying social network analysis and we use the Apache web server as a case study. By analyzing the structural communication and coordination patterns in Apache we have been able to identify the Apache knowledge network, highlight potential communication bottlenecks, and find brokers and important coordination points in the software development team. Furthermore, our work enables a software architect to analyze and maintain the organization and the software architecture aligned during software evolution. An important lesson that we have is that the analysis of knowledge networks constitutes an additional tool to be added to the traditional software architecture assessment methods. Copyright © 2009 John Wiley & Sons, Ltd.
Verification of real‐time systems design
Authors: Cambronero M. Emilia , Valero Valentín , Díaz Gregorio 
Published: April 2009

AbstractThe main objective of this paper is to present an approach to accomplish verification in the early design phases of a system, which allows us to make the system verification easier, specifically for those systems with timing restrictions. For this purpose we use RT‐UML sequence diagrams in the design phase and we translate these diagrams into timed automata for performing the verification by using model checking techniques. Specifically, we use the Object Management Group's UML Profile for Schedulability, Performance, and Time and from the specifications written using this profile we obtain the corresponding timed automata. The ‘RT‐UML Profile’ is used in conjunction with a very well‐known tool to perform validation and verification of the timing needs, namely, the UPPAAL tool, which is used to simulate and analyze the behaviour of real‐time dynamic systems described by timed automata. Copyright © 2009 John Wiley & Sons, Ltd.
System testing for object‐oriented systems with test case prioritization
Authors: Kundu Debasish , Sarma Monalisa , Samanta Debasis , Mall Rajib 
Published: April 2009

AbstractThis paper presents an approach to generate test cases from UML 2.0 sequence diagrams and subsequently prioritize those test cases using model information encapsulated in the sequence diagrams. The test cases generated according to the proposed approach satisfy the scenario coverage criterion and are suitable for system‐level testing. For prioritizing test cases, three different prioritization metrics are proposed. The values of these prioritization metrics can be analytically computed from the model information only. This paper also presents an approach to generate test data using a concept called rule‐based matrix. The prioritization metrics are used to control the number of test data without compromising the test adequacy. The effectiveness of the proposed approach has been verified using two industrial designs. Copyright © 2009 John Wiley & Sons, Ltd.
Three‐dimensional wind load effects and wind‐induced dynamic responses of a tall building with X‐shape
Authors: Lou Wenjuan , Huang Mingfeng , Jin Hu , Shen Guohui , Chan C. M. 
Published: April 2009

AbstractThree‐dimensional wind load effects on a tall building with X‐shape are investigated based on measured synchronous surface pressures in a wind tunnel. The mean and root‐mean‐square storey force coefficients in the three primary directions, i.e. along‐wind, crosswind and torsional wind, of the building are presented. Wind‐induced response analysis has been carried out in time domain by using the step‐by‐step numerical integration method, and the occupant comfort performance of the practical 42‐storey building is checked against the Chinese tall building design code. In the dynamic analysis, the buildings are modelled by a lumped mass system having three degrees of freedom at each floor level, i.e. two orthogonal translations and one rotation about a vertical axis. A new resultant displacement projection method is proposed to calculate the gust response factors (GRFs) along two orthogonal coordinate directions for design purpose. Not only can the calculated GRFs ensure the synchronization among the maximum resultant displacement and the maximum component displacements along X‐ and Y‐axes, but also are capable of taking crosswind effects into account. Copyright © 2009 John Wiley & Sons, Ltd.