bluuebunny/crossref_metadata_2025_split huggingface dataset:
Effect of aluminium sulphate on phase formation and morphology development of mullite whiskers
Authors: Tan Hongbin 
Published: September 2010

AbstractWell developed mullite whiskers were obtained by heating compacts of kaolin and 2 wt.% sodium pyrophosphate powder at 1350ºC for 10 h, with or without a small addition of aluminium sulphate. Without aluminium sulphate, mullite whiskers were obtained with an aspect ratio of >8 and reasonably uniform diameter (~0.05–0.3 μm). When aluminium sulphate additions were employed a mass of relatively well developed and interlocked whisker-shaped crystals were produced, with an aspect ratio of >10 (~0.05–0.3 μm in diameter). Larger whiskers were also observed, with aspect ratio of >25 (~0.2–0.5 μm in diameter).
Mutation of inhibitory helix-loop-helix protein Id3 causes γδ T-cell lymphoma in mice
Authors: Li Jun , Maruyama Takashi , Zhang Pin , Konkel Joanne E. , Hoffman Victoria , Zamarron Brian , Chen WanJun 
Published: September 2010

AbstractHuman γδ T-cell lymphoma is a rare clinicopathologic entity with aggressive course and poor prognosis. The etiology and pathogenesis of γδ T-cell lymphoma is unknown. We show here that mice with deficiency in inhibitory helix-loop-helix protein Id3 (Id3−/−) developed γδ T-cell lymphoma that resembled human γδ T-cell lymphoma. The Id3−/− mice with lymphoma showed splenomegaly, hepatomegaly, and lymphadenopathy with involvement of bone marrow, thymus, kidney, and lungs between 6 and 15 months of age. Phenotypic analysis revealed that lymphomatous cells were cluster of differentiation (CD)3+, γδ T-cell receptor (TCR)+, and αβ TCR−, and expressed CD8+CD4−, CD4+CD8−, or a mixture of the two. Id3−/− γδ T-cell lymphoma used predominantly Vγ1.1, some Vγ3, yet no Vγ2 TCR, and some showed increased levels of the oncogene c-Myc. Strikingly, adoptive transfer of the γδ T-cell lymphoma into syngeneic Rag1−/− mice resulted in aggressive γδ T-cell lymphoma, identical to the Id3−/− donor. Thus, our data demonstrate that Id3 regulates the development of γδ T-cell lymphoma in mice, raising a possibility of Id3 gene mutation in human γδ T-cell lymphoma. Our model will provide a tool for studying the molecular mechanisms and development of human γδ T-cell lymphoma.
miR-155 and its star-form partner miR-155* cooperatively regulate type I interferon production by human plasmacytoid dendritic cells
Authors: Zhou Haibo , Huang Xinfang , Cui Huijuan , Luo Xiaobing , Tang Yuanjia , Chen Shunle , Wu Li , Shen Nan 
Published: September 2010

AbstractThe recent discovery of microRNAs (miRNAs) has revealed a new layer of gene expression regulation, affecting the immune system. Here, we identify their roles in regulating human plasmacytoid dendritic cell (PDC) activation. miRNA profiling showed the significantly differential expression of 19 miRNAs in PDCs after Toll-like receptor 7 (TLR7) stimulation, among which miR-155* and miR-155 were the most highly induced. Although they were processed from a single precursor and were both induced by TLR7 through the c-Jun N-terminal kinase pathway, miR-155* and miR-155 had opposite effects on the regulation of type I interferon production by PDC. Further study indicated that miR-155* augmented interferon-α/β expression by suppressing IRAKM, whereas miR-155 inhibited their expression by targeting TAB2. Kinetic analysis of miR-155* and miR-155 induction revealed that miR-155* was mainly induced in the early stage of stimulation, and that miR-155 was mainly induced in the later stage, suggesting their cooperative involvement in PDC activation. Finally, we demonstrated that miR-155* and miR-155 were inversely regulated by autocrine/paracrine type I interferon and TLR7-activated KHSRP at the posttranscriptional level, which led to their different dynamic induction by TLR7. Thus, our study identified and validated novel miRNA-protein networks involved in regulating PDC activation.
Deletion-based mechanisms of Notch1 activation in T-ALL: key roles for RAG recombinase and a conserved internal translational start site in Notch1
Authors: Ashworth Todd D. , Pear Warren S. , Chiang Mark Y. , Blacklow Stephen C. , Mastio Jérôme , Xu Lanwei , Kelliher Michelle , Kastner Philippe , Chan Susan , Aster Jon C. 
Published: September 2010

Abstract
Point mutations that trigger ligand-independent proteolysis of the Notch1 ectodomain occur frequently in human T-cell acute lymphoblastic leukemia (T-ALL) but are rare in murine T-ALL, suggesting that other mechanisms account for Notch1 activation in murine tumors. Here we show that most murine T-ALLs harbor Notch1 deletions that fall into 2 types, both leading to ligand-independent Notch1 activation. Type 1 deletions remove exon 1 and the proximal promoter, appear to be RAG-mediated, and are associated with mRNA transcripts that initiate from 3′ regions of Notch1. In line with the RAG dependency of these rearrangements, RAG2 binds to the 5′ end of Notch1 in normal thymocytes near the deletion breakpoints. Type 2 deletions remove sequences between exon 1 and exons 26 to 28 of Notch1, appear to be RAG-independent, and are associated with transcripts in which exon 1 is spliced out of frame to 3′ Notch1 exons. Translation of both types of transcripts initiates at a conserved methionine residue, M1727, which lies within the Notch1 transmembrane domain. Polypeptides initiating at M1727 insert into membranes and are subject to constitutive cleavage by γ-secretase. Thus, like human T-ALL, murine T-ALL is often associated with acquired mutations that cause ligand-independent Notch1 activation.
Heparin modifies the immunogenicity of positively charged proteins
Authors: Chudasama Shalini L. , Espinasse Benjamin , Hwang Fred , Qi Rui , Joglekar Manali , Afonina Galyna , Wiesner Mark R. , Welsby Ian J. , Ortel Thomas L. , Arepally Gowthami M. 
Published: September 2010

AbstractThe immune response in heparin-induced thrombocytopenia is initiated by and directed to large multimolecular complexes of platelet factor 4 (PF4) and heparin (H). We have previously shown that PF4:H multimolecular complexes assemble through electrostatic interactions and, once formed, are highly immunogenic in vivo. Based on these observations, we hypothesized that other positively charged proteins would exhibit similar biologic interactions with H. To test this hypothesis, we selected 2 unrelated positively charged proteins, protamine (PRT) and lysozyme, and studied H-dependent interactions using in vitro and in vivo techniques. Our studies indicate that PRT/H and lysozyme/H, like PF4/H, show H-dependent binding over a range of H concentrations and that formation of complexes occurs at distinct stoichiometric ratios. We show that protein/H complexes are capable of eliciting high-titer antigen-specific antibodies in a murine immunization model and that PRT/H antibodies occur in patients undergoing cardiopulmonary bypass surgery. Finally, our studies indicate that protein/H complexes, but not uncomplexed protein, directly activate dendritic cells in vitro leading to interleukin-12 release. Taken together, these studies indicate that H significantly alters the biophysical and biologic properties of positively charged compounds through formation of multimolecular complexes that lead to dendritic cell activation and trigger immune responses in vivo.
Experiences in Establishing a PEPFAR-Supported Laboratory Quality System in Nigeria
Authors: Abimiku Alash’le G. , Croxton Talishiea , Akintunde Ezekiel , Okelade Bimpe , Jugu Joseph , Peters Sam , Dakum Patrick , Blattner William , Constantine Niel 
Published: September 2010

Abstract
The need to accurately diagnose HIV-infected persons and monitor their immune status and sequelae from increased access to antiretroviral therapy dictated the establishment of a quality assurance (QA) system supported by dedicated personnel, financial resources, and a close monitoring system.
Assessment of laboratories and personnel in Nigeria revealed the need for improved laboratory infrastructure and training, including on-site didactic and wet workshops and the institution of a tiered QA unit of laboratory regional officers, focal persons, and site monitors who provided guidance and continuous monitoring. Quarterly assessments and generated reports guided corrective actions.
A sustainable quality laboratory system was developed for the first time in Nigeria with funding from the US President’s Emergency Plan for AIDS Relief. With expansion from 7 to 34 comprehensive treatment sites, a tiered laboratory organizational structure with regional and site-based Nigerian quality control officers was developed. Measured improvements included reduction in deficiencies from 13% to 2%.
Multicolor FISH (UroVysion) Facilitates Follow-up of Patients With High-Grade Urothelial Carcinoma of the Bladder
Authors: Fritsche Hans-Martin , Burger Maximilian , Dietmaier Wolfgang , Denzinger Stefan , Bach Ekkehard , Otto Wolfgang , Doblinger Matthias , Schwarz Stephan , Buchner Hannes , Hartmann Arndt 
Published: September 2010

AbstractThe aim of the present prospective study was to assess the diagnostic benefit of UroVysion (Vysis-Abbott Laboratories, Downers Grove, IL) in the follow-up of patients with a history of high-grade non–muscle-invasive urothelial carcinoma of the bladder (NMIBC). An unselected cohort of 25 patients with a history of high-grade NMIBC was prospectively followed up by office-based cystoscopy, cytology, and UroVysion in 210 events.The sensitivity and specificity for standard combined cystoscopy and cytology were 78% and 83%, respectively. UroVysion yielded a considerably higher detection rate with 94% and 93%, respectively. In 89% of the follow-up events of patients with a history of previous carcinoma in situ (CIS) and negative cystoscopy but a positive UroVysion finding, CIS recurrence was noticed within 5 months.UroVysion is a worthwhile approach in patients with previous CIS, a high risk for the development of CIS, or previous unequivocal cytology suggestive of CIS, especially during or shortly after instillation therapy.
Improving Detection of Blindness in Childhood: The British Childhood Vision Impairment Study
Authors: Rahi Jugnoo S. , Cumberland Phillippa M. , Peckham Catherine S. ,   for the British Childhood Visual Impairment Interest Group
Published: September 2010

OBJECTIVES:In industrialized countries, there are established programs of childhood vision screening and surveillance, but little is known about their performance. We investigated the patterns of presentation/detection and early treatment of a nationally representative cohort of children with severe visual impairment or blindness (SVI/BL) in 1 year (2000) in the United Kingdom.METHODS:All children who were younger than 16 years and had a new diagnosis of SVI/BL were identified by active surveillance through the British Ophthalmological and Pediatric Surveillance Units. Data that were collected up to 1 year after diagnosis included sociodemographic characteristics, detection of SVI/BL, nonophthalmic disorders/impairments, ophthalmic findings, and early management.RESULTS:Of 439 identified children, 65% were younger than 1 year at diagnosis, 28% were of nonwhite ethnicity, and 40% in the worst quintile of deprivation score. A total of 77% had associated nonophthalmic disorders/impairments. Although 70% had established symptoms or signs at diagnosis by a health professional, parents had suspected blindness in only 47%. A quarter of isolated SVI/BL was detected through routine vision screening; however, 46% of children's SVI/BL and associated nonophthalmic disorders/impairments were diagnosed through a clinical surveillance examination undertaken because of high risk for a specific eye disease.CONCLUSIONS:The “patient journey” of children with visual impairment is markedly influenced by the presence of additional impairments/chronic diseases. Parents' understanding of normal visual development needs to be improved. Increasingly, new evidence-based formal programs of clinical (ophthalmic) surveillance are needed in response to the changing population of children who are at risk for blinding eye disease.
Epitaxial Dy2O3 Thin Films Grown on Ge(100) Substrates by Molecular Beam Epitaxy
Authors: Bhuiyan Md. Nurul Kabir , Menghini Mariela , Dieker Christel , Seo Jin Won , Locquet Jean-Pierre , Vitchev Roumen , Marchiori Chiara 
Published: September 2010

AbstractDysprosium oxide (Dy2O3) films are grown epitaxially on high mobility Ge(100) substrates by molecular beam epitaxy system. Reflection high energy electron diffraction patterns and X-ray diffraction spectra show that single crystalline cubic Dy2O3 films are formed on Ge(100) substrates. The epitaxial-relationship is identified as Dy2O3 (110)║Ge(100) and Dy2O3 [001]║Ge[011]. Atomic force microscopy results show that the surface of the Dy2O3 film is uniform, flat and smooth with root mean square surface roughness of about 4.6Å. X-ray photoelectron spectroscopy including depth profiles confirms the composition of the films being close to Dy2O3. TEM measurements reveal a sharp, crystalline interface between the oxide and Ge.
Study of Germanium Epitaxial Recrystallization on Bulk-Si Substrates
Authors: Ho Byron , Vega Reinaldo , King-Liu Tsu-Jae 
Published: September 2010

AbstractLPCVD Ge films are deposited onto bulk Si substrates and subjected to either a rapid thermal anneal (RTA) or furnace anneal (FA) at a temperature that is higher than the melting point of Ge in an attempt to induce epitaxial recrystallization. Spiking into the Si and voids in the Ge film are observed after the anneal. This is attributed to defect-assisted Ge diffusion into the Si substrate caused by strain at the Ge-Si interface. Simple diffusion theory using published diffusivity values predicts diffusion depths similar to the spiking depths observed by scanning electron microscopy and transmission electron microscopy. Approaches to reduce the strain at the interface are explored. It is found that the quasi-equilibrium nature of FA reduces spiking and that there is an area dependence. Grazing-incidence x-ray diffraction analysis suggests that this technique for epitaxial recrystallization does not result in single-crystalline Ge.
Interfacial Properties, Surface Morphology and Thermal Stability of Epitaxial GaAs on Ge Substrates with High-k Dielectric for Advanced CMOS Applications
Authors: Kumar A , Dalapati G K , Wong Terence Kin Shun , Kumar M K , Chia C K , Gao H , Wang B Z , Wong A S , Chi D Z 
Published: September 2010

AbstractEpitaxial GaAs layers had been grown by metal organic chemical vapor deposition at 620°C on Ge(100) susbtrates. The surface roughness of the GaAs is greater than that of GaAs bulk wafers and epilayer morphology is influenced by miscut of the Ge substrate. The GaAs/Ge interface is of good quality and devoid of misfit dislocations and antisite defects. However, Ge diffusion into GaAs occurred during epitaxy and resulted in auto-doping. ZrO2 was deposited by magnetron sputtering onto the epi-GaAs. Capacitance voltage measurements show that the TaN/ZrO2/epi-GaAs capacitor has an interfacical with more defects than a ZrO2/bulk GaAs interface. An improved interface with smaller frequency dispersion can be formed by atomic layer deposition of the high-k dielectric layer onto the epi-GaAs.
Evaluation of the Vapor and Chemical Sensing Mechanism for Pentacene Field Effect Transistors
Authors: Duarte Davianne A , Sharma Deepak , Cobb Brian , Dodabalapur Ananth 
Published: September 2010

AbstractProperties such as semicondutor film grain size, morphology, and channel length are known to effect the sensing response in pentacene based organic thin film transistors (OTFTs). The sensing behavior for low and high mobility pentacene devices are reported here exhibiting different temperature dependent behaviors. The lower mobility OTFT exhibits an expected thermally activated response during alcohol testing with an increasing mobility with temperature along with a decreasing mobility at each temperature for increasing concentration. The higher mobility device exhibits a decrease in mobility with increasing temperature along with a decrease in mobility with increasing concentration at each temperature. In both sets of devices, the polar analyte produced reductions in drain current and shifts in threshold voltage.
Novel Concept for the Formation of Sensitive, Selective, Rapidly Responding Conductometric Sensors
Authors: Gole James L , Ozdemir Serdar 
Published: September 2010

AbstractRapidly responding, reversible, sensitive, and selective porous silicon-based (PS) gas sensors, operating at low power, are formed with a highly efficient electrical contact to a nanopore covered microporous array. Significant changes in sensor surface sensitivity can be correlated with the strong and weak acid-base (HSAB) character of the interacting gas analyte and the acidic nature of the PS surface so as to produce a dominant physisorption and create a range of highly selective surface coatings. This selection process dictates the application of nanostructured metal oxide and/or nanoparticle catalytic coatings, and provide for notably higher sensitivities which, in concert, form a basis for selectivity. Depositions which include AuxO, SnOx (Sn+2,+4) , CuxO ( Cu+1,+2), NiO(Ni+2) , nano-alumina, and titania, provide for the detection of gases including NO, NO2, CO, NH3, PH3, and H2S in an array-based format at the sub-ppm level. The value of this conductometric sensor technology results from a combination of (1) its sensitivity and short recovery time, (2) its operation at room temperature as well as at a single, readily accessible, temperature with an insensitivity to temperature drift, (3) its potential operation in a heat-sunk configuration allowing operation to a surface temperature of 80°C even in highly elevated temperature environments (in sharp contrast to metal oxide sensors), (4) its ease of coating with diversity of clearly mapped gas-selective materials for form sensor arrays, (5) its low cost of fabrication and operation, (6) its low power consumption, (7) its ease of rejuvenation following contamination, and (8) its ability to rapidly assess false positives using FFT techniques, operating the sensor in a pulsed gas mode.
Effects of substrates and catalysts compositions on the crystalline quality of InP Nanowires grown on SrTiO3 (001), Si(001) and InP (111)
Authors: Naji Khalid , Dumont Herve , Saint-Girons Guillaume , Patriarche Gilles , Gendry michel 
Published: September 2010

AbstractIndium phosphide (InP) nanowires (NWs) were grown by molecular beam epitaxy on various substrates including SrTiO3 (001), Si (001) and InP (111) at a growth temperature of 380°C. We used the Vapor Liquid Solid assisted method with Au as a metal catalyst. The composition of the catalyst particles and the crystalline structure of the nanowires were compared using reflection high energy electron diffraction, scanning electron microscopy and high resolution transmission electron microscope. It is found that InP nanowires grown onto InP and SrTiO3 substrates are structurally defects free with a wurtzite structure. On Si (001) substrates, the presence of stacking faults and cubic phase insertion along the growth direction is observed. The effect of the substrate on the composition of catalyst droplets and consequently on the crystalline quality of the nanowires is discussed for the conditions of nucleation and defect formation.
The Benefits of HCl in the Growth of Silicon Nanowires by Chemical Vapour Deposition: Growth of Small Diameter Nanowires and Controlled Facet Evolution
Authors: Oehler Fabrice , Gentile Pascal , Baron Thierry , Ferret Pierre 
Published: September 2010

AbstractThe effects of hydrogen chloride (HCl) on the growth of silicon nanowires by Chemical Vapour Deposition are investigated. HCl is found to enable the growth of small diameter gold-catalyzed silicon nanowires while reducing the kink occurrence. Specific growth sequences are presented in order to obtain a one-to-one ratio of nanowire growth versus gold colloidal seed. Other growth sequences using HCl are illustrated but achieve mixed results concerning the nanowire structure and the surface state.
Effect of Transparent Electrode on the Performance of Bulk Heterojunction Solar Cells
Authors: Adikaari A.A. Damitha T , Briscoe Joe , Dunn Steve , Carey David , Silva Ravi 
Published: September 2010

AbstractWe present a performance comparison of polythiophene/fullerene derivative bulk heterojunction solar cells fabricated on fluorinated tin oxide (FTO) and indium tin oxide (ITO) in the presence and absence of the commonly used poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hole extraction layer. From a potential commercial perspective the performance of cheaper and more readily available FTO compares well with the more expensive ITO in terms of measured device efficiency (FTO:2.8 % and ITO:3.1%). The devices show similar fill factors (FTO:63% and ITO:64%) with the same open circuit voltage of 0.6 V. The short circuit current density is lower for FTO devices at 7.5 mA/cm2 which compares with 8.0 mA/cm2 for ITO; a behaviour that is mainly attributed to the reduced optical transmission of the FTO layer. Importantly, these devices were part fabricated and wholly characterized under atmospheric conditions. The quoted device performance is the best reported for FTO based bulk heterojunction systems in the absence of the highly acidic PEDOT:PSS hole extraction layer, which is believed to degrade conductive oxides.
Liquid State Polydimethylsiloxane (PDMS) Wrinkle Formation Process for Various Applications.
Authors: Lee Sang Hoon , Jeon Jangbae , Lee Sang Ho , Kim Moon J. 
Published: September 2010

AbstractHere we report an epoch-making simple fabrication for wrinkle formation. The present wrinkle formation process is a solution for controlling the area, shape and direction of wrinkle area by forming wrinkles on the liquid state polydimethylsiloxane directly exposed to sputtered metal particles in the low vacuum plasma chamber in various vacuum states and deposition conditions. Also the process allows us to make extremely flexible metal thin film electrode with approved adhesion. These bring us possibilities of actual electrical and biological applications.