bluuebunny/crossref_metadata_2025_split huggingface dataset:
Effect of Tensile Deformation on the Grain Size of Annealed Grain Non-Oriented Electrical Steel
Authors: Salinas B. J. , Salinas A. 
Published: April 2011

ABSTRACTAn experimental study on the effect of tensile deformation on recrystallized grain size has been carried out in order to establishing the optimal deformation needed to accelerate grain growth during final annealing of semi-processed non-oriented Si-Al, low C electrical steel sheets. The material is deformed in tension to strains from 3 to 20% and then air-annealed at temperatures between 700 and 900 °C. The results show that the critical deformation for recrystallization (8%) is independent of annealing temperature. However, the critical recrystallized grain size increases with annealing temperature from 160 to 240 μm. After that, the grain size decreases exponentially with increasing deformation. Abnormal grain growth is observed in samples annealed at 700 °C after strains in the range from 7 to 12%. This type of behavior is also observed in specimens annealed at 800 and 900 °C, however, in this case the pre-strain range is expanded to 3–12%. Normal grain growth is observed in samples pre-deformed to strains larger than 12%. In this case, the final grain size after 2 hour anneal is about 55 μm, also independent of annealing temperature. The possible implications of these results on the magnetic properties of these materials are discussed.
Rheological characterization and tape casting of aqueous zircon slips
Authors: León Carriedo M. , Gutiérrez Chavarría C. A. , Rodríguez Galicia J. L. , Pech Canul M. I. , López Cuevas J. 
Published: April 2011

ABSTRACTIn this work, a commercial zircon flour of 99% purity and mean particle size of 10μm is used. Suspension stabilization process is carried out using the electrostatic stabilization mechanism at pH 11 employing Tetramethylammonium hydroxide (TMAH). Tape casting suspensions are formulated with binding systems obtained by the combination of polyvinyl alcohol with polyethylene glycol, additionally the binding system is added at different binder:plasticizer ratio ranging from 1:1 to 3:1. Suspensions are characterized rheologically determining its type and flow properties by obtaining flow and viscosity curves. Suspensions are tape cast on vinyl-acetate substrates and are dried at room conditions to determine some physical properties of the obtained tapes and to correlate the rheological with the physical properties. The experimental results show that tape casting suspensions have a shear thinning flow type, yield points and flow indexes varying as a function of binder system combination and binder:plasticizer ratio. Also, the binder system has a strong influence on the green tapes characteristics.
Dynamic Behaviour of Lead Nanoparticles in A Dielectric Matrix
Authors: Cheyssac P. , Kofman R. , Merli P. G. , Migliori A. , Stella A. 
Published: April 2011

ABSTRACTIn this paper we present electron microscopy results near and below the melting temperature, both in dark field and high resolution mode, of lead nanoparticles embedded in a dielectric matrix of amorphous SiOx. Three different size dependent regimes are distinguished. Indications of solid particles rotations as well as of a new phenomenon amenable to spontaneous solid-liquid phase fluctuations will be briefly discussed.
Holographic Atom Imaging from Experimental Photoelectron Angular Distribution Patterns
Authors: Terminello L. J. , Lapiano-Smith D. A. , Barton J. J. , Petersen B. L. , Shirley D. A. 
Published: April 2011

ABSTRACTOne of the most challenging areas of materials research is the imaging of technologically relevant materials with microscopic and atomic-scale resolution. As part of the development of these methods, near-surface atoms in single crystals were imaged using core-level photoelectron holograms. The angle-dependent electron diffraction patterns that constitute an electron hologram were two-dimensionally transformed to create a three dimensional, realspace image of the neighboring scattering atoms. We have made use of a multiplewavenumber, phased-summing method to improve the atom imaging capabilities of experimental photoelectron holography using the Cu(001) and Pt(111) prototype systems. These studies are performed to evaluate the potential of holographic atom imaging methods as structural probes of unknown materials.
Imaging of Buried Si and Si:Ge Surface Structure Under Amorphous Ge Films by Plan View Transmission Electron Microscopy
Authors: Hellman Olof C. 
Published: April 2011

ABSTRACTReal space plan-view Transmission Electron Microscopy (TEM) of the interfacial structure at the amorphous-Ge / Si (111) interface is presented. Ge is deposited at between room temperature and 150°C on either a 5×5 or 7×7 reconstructed surface. Conventional Plan-view TEM analysis reveals microstructural details such as surface steps, reconstruction phase shift boundaries and the reconstruction itself buried under the amorphous film, features which have previously been seen only as clean surfaces in UHV. Also imaged are small regions where Ge grows epitaxially on the Si surface above room temperature. These are seen to appear preferentially at steps and phase shift boundaries.
Nanostructural Studies by MÖssbauer Spectroscopy
Authors: Papaefthymiou Georgia C. 
Published: April 2011

ABSTRACTApplication of 57Fe MÖssbauer spectroscopy to the determination of magnetic structural parameters relevant to nanostructural studies is discussed. Variable temperature and applied magnetic field strength investigations are considered in order to illustrate the power of the technique in rendering a microscopic picture of the internal spin structure and dynamical spin relaxation phenomena associated with nanoscale systems. Examples from biology and chemistry, where iron aggregates of nanometer dimensions are encountered, are presented.
Compositions and Chemical Bonding in Ceramics by Quantitative Electron Energy-Loss Spectrometry
Authors: Bentley J. , Horton L.L , Mchargue C.J. , Mckernan S. , Carter C.B. , Revcolevschi A. , Tanaka S. , Davis R.F. 
Published: April 2011

ABSTRACTQuantitative electron energy-loss spectrometry was applied to a range of ceramic materials at a spatial resolution of <5 nm. Analysis of Fe L23 white lines indicated a low-spin state with a charge transfer of ∼1.5 electrons/atom onto the Fe atoms implanted into (amorphized) silicon carbide. Gradients of 2 to 5% in the Co:O stoichiometry were measured across 100-nm-thick Co3O4 layers in an oxidized directionally solidified CoO-ZrO2 eutectic, with the highest O levels near the ZrO2. The energy-loss near-edge structures were dramatically different for the two cobalt oxides: those for Co3O4 have been incorrectly ascribed to CoO in the published literature. Kinetically stabilized solid solubility occurred in an AIN-SiC film grown by low-temperature molecular beam epitaxy (MBE) on α(6H)-SiC, and no detectable interdiffusion occurred in couples of MBE-grown AIN on SiC following annealing at up to 1750°C. In diffusion couples of polycrystalline AIN on SiC, interfacial 8H sialon (aluminum oxy-nitride) and pockets of Si3N4-rich β'sialon in the SiC were detected.
Spectroscopic Characterization of Nanoscale Modification of Passivated Si(100) Surface by STM
Authors: PÉRez-Murano F. , Barniol N. , Aymerich X. 
Published: April 2011

ABSTRACTThe electrochemical modification of H-passivated Si(100) surface is produced and characterized by Scanning Tunneling Microscopy and Spectroscopy (STM/STS) operating in air. In order to better understand this nanometer scale modification, we have characterized spectroscopically the modified region. From the current-voltage (I/V) curves, dI/dV versus V curves and tip to sample spacing versus voltage (s/V) curves (at constant current) we have concluded that the modification induces a local electrochemical change on the surface, which in turn produces both, a decrease of the local density of surface states and a variation of the band bending in the silicon surface.
Microtribological Studies by Using Atomic Force and Friction Force Microscopy and its Applications
Authors: Bhushan Bharat , Koinkar Vilas N. , Ruan J. 
Published: April 2011

ABSTRACTWe have used atomic force microscopy (AFM) and friction force microscopy (FFM) techniques for microtribological studies including microscale friction, nanowear, nanoscratching and nanoindentation hardness measurements. The microscale friction studies on a gold ruler sample demonstrated that the local variation in friction correspond to a change of local surface slope, and this correlation is explained by a friction mechanism. Directionality effect is also observed as the sample was scanned in either direction. Nanoscratching, nanowear and nanoindentation hardness studies were performed on single-crystal silicon. Wear rates of single crystal silicon are approximately constant for various loads and test duration. Nanoindentation hardness studies show that AFM technique allows the hardness measurements of surface monolayers and ultra thin films in multilayered structures at very shallow depths and low loads. The AFM technique has also been shown to be useful for nanofabrication.
Hrem Structure Characterization of Relaxed Interfaces in Covalently Bonded Materials
Authors: Scheerschmidt Kurt 
Published: April 2011

ABSTRACTMulti-layer semiconductor structures (quantum wells and grain boundaries) grown by molecular beam epitaxy (MBE) as well as precipitates in glasses are investigated by high resolution electron microscopy (HREM) providing local atomic information at the relaxed interfaces. The interpretation of the micrographs requires methods of image analysis and the computer simulation of the HREM contrast by calculating the electron beam specimen interaction of a theoretical structure model, and by subsequently considering the electron-optical process. The relaxed atomic structures of the interfaces are modelled by molecular dynamics and energy minimization with the bonding forces and the parameters of the pair and three-body potentials being varied. Possibilites will be discussed of revealing the compositional variations and the elastic deformations at the interfaces by HREM imaging under special imaging conditions.
X-Ray Diffraction Determination of the Effect of Passivations on Stress in Patterned Lines of Tungsten
Authors: Maniguet L. , Ignat M. , Dupeux M. , Bacmann J.J. , Normandon Ph. 
Published: April 2011

ABSTRACTThe determination by X-ray diffraction of the elastic strain tensors and the corresponding stress tensors in patterned lines of tungsten has been performed to investigate the effect of various passivation. For unpassivated lines, the stresses are biaxial and decrease with decreasing line width. Passivation over patterned lines results in triaxial tensile stress. The stress along the line is not changed by the passivation. The stress across the line decreases as the line width decreases. The third component of stress, perpendicular to the surface, which appears with the passivation, increases with decreasing line width. High compressive intrinsic stress in the passivation does not result in high tensile stress in the metal line.
Impact of Various In Situ Preoxidation Process Perturbations on Gate Oxide Quality
Authors: Roy P. K. , Weinhoffer M. , Dyas R. L. , Meester S. 
Published: April 2011

ABSTRACTThis work describes an orthogonal array (OA8) designed experiment involving several insitu process perturbations during oxidation to develop a 90 Å gate oxide for 0.5μm CMOS technology. The biggest impactors were (i) the insitu preoxidation anneal at oxidation temperature, Tox, (ii) 90% N2 dilution of the ambient during ramp-up, and (iii) lowering the Tox to 850°C. Significant improvements in leakage, breakdown, and wear-out characteristics of the oxide are probably due to the reduction of poor quality ramp oxide grown by 90% N2 dilution and improved Si/SiO2 interfacial substructure attained by the insitu preoxidation anneal.
Line width Dependence of Stress Relaxation and Yield Behavior of Passivated Al(Cu) Lines
Authors: Yeo I.-S. , Anderson S.G.H. , Liao C.-N. , Jawarani D. , Kawasaki H. , Ho P.S. 
Published: April 2011

ABSTRACTStress relaxation behavior of thermally induced stresses in passivated line structures is strongly influenced by the metal yield strength. For some line geometries, stress relaxation can lead to void formation. In this study, bending beam measurements have been carried out to measure the thermal stress and stress relaxation behavior of passivated Al(l wt.% Cu) line structures with 3, 1, and 0.5 µm line widths. Our results reveal that stress relaxation in Al(Cu) films and lines shows log(time) kinetics consistent with a thermally activated dislocation glide mechanism. The kinetics of stress relaxation depend on line geometry and temperature, which can be explained by a combined effect of temperature (mass transport) and shear stress (driving force).
Thermal Stresses in Passivated Copper Interconnects Determined by X-Ray Analysis and Finite Element Modeling
Authors: Vinci R.P. , Zielinski E.M. , Bravman J.C. 
Published: April 2011

ABSTRACTStresses in passivated copper lines were determined from strains measured using x-ray methods and compared to stresses calculated using finite element methods. Copper lines, 2 µm wide by 0.8 µm thick, were fabricated by DC magnetron sputtering and lift off patterning. The cross section of these lines was trapezoidal, with approximately 50° sidewalls. One set of samples was left bare, the others passivated with Si3N4 in several different thicknesses. Strain was determined using x-rays. Stress was calculated using elastic moduli adjusted for predominantly (111) fiber texture. Elastic-plastic finite element models provided comparisons of the effects of passivation thickness, rectangular and trapezoidal cross section, and mechanical anisotropy due to preferred texture on the hydrostatic stress in a line. A similar model for aluminum also provided a comparison case of stress as a function of passivation thickness.
The Effect of Variability Among Grain Boundary Energies on Grain Growth in Thin Film Strips
Authors: Frost H.J. , Hayashi Y. , Thompson C.V. , Walton D.T. 
Published: April 2011

ABSTRACTGrain growth in thin-film strips is important to interconnect reliability because grain boundary structures strongly effect the rate and mechanism of electromigration-induced failure. Previous simulations of this process have indicated that the transformation to the fully bamboo structure proceeds at a rate which decreases exponentially with time, and which is inversely proportional to the square of the strip width. We have also reported that grain boundary pinning due to surface grooving implies that there exists a maximum strip width to thickness ratio beyond which the transformation to the bamboo structure does not proceed to completion. In this work we have extended our simulation of grain growth in thin films and thin film strips to consider the effects of variations in grain boundary energy. Boundary energy is taken to depend on the misorientation between the two neighboring grain and the resulting variations in grain boundary energy mean that dihedral angles at triple junctions deviate from 120°. The proportionality between boundary velocities and local curvatures, and the critical curvature for boundary pinning due to surface grooving also both depend on boundary energy. In the case of thin-film strips, the effect of boundary energy variability is to impede the transformation to the bamboo structure, and reduce the width above which the complete bamboo structure is never reached. Those boundaries which do remain upon stagnation tend to be of low energy (low misorientation angle) and are therefore probably of low diffusivity, so that their impact on reliability is probably reduced.
In Situ Observations of Voiding in Metal Lines Under Passivation
Authors: Marieb T. , Bravman J.C. , Flinn P. , Madden M. 
Published: April 2011

ABSTRACTMovies showing high voltage scanning electron microscope (HVSEM) in situ observations of void motion in passivated metal lines were produced. By taking pictures of the line when the void morphology changes and combining these images digitally with a technique called morphing, a time-lapse movie is constructed with the minimum amount of stored images. The sequence of still images from which a movie is constructed are shown in this paper. This sequence demonstrates that wedge voids do not cause failure in near-bamboo pure Al lines; rather the void will move until it encounters a grain which it can grow across in a slit-like manner.
Statistics of CRack Initiation and Propagation
Authors: Quinones H. , Shatzkes M. 
Published: April 2011

ABSTRACTStatistics of fracture fatigue are derived based on essentially general models of crack propagation and initiation. In fact, the form of the distribution is invariant with respect to the crack propagation law, however, the parameters do depend on the details of the phenomena. When this dependence is known, i.e. extracted from experimental data, our results can be applied even in the case of changing environments. Thus, such problems as projections to use conditions and the efficiency of burn in procedures can be precisely formulated and resolved, often without the requirements of further testing. These advantages derive from our use of physical models in deriving the failure distribution. This was not previously the case where for the almost universally used log-normal distribution each new situation requires the establishment of new rules. In fact, the log-normal is usually pessimistic and requires ad-hoc rectification to account for curvature when plotted on log-normal paper!, and generally does not relate to the fatigue process.
Organic Polymer Dielectrics in Microelectronic Technologies: Reliability Requirements, Testing, and Qualification
Authors: Townsend P. H. , Heistand R. H. , Castillo D. , Stokich T. M. , Allen B. , Radler M. , Tarnowski T. , Blackson J. , Klassen H. , Miller B. , Theide H. , Strandberg J. , Karlsson A. 
Published: April 2011

ABSTRACTThis work reviews the dependence of reliability testing results on material processing and properties for polymeric materials used in high density interconnection technologies.Specific data are presented for CyclotenesTM 3022 resins containing divinylsiloxane bisbenzocyclobutene, (CAS 117732-87-3). Silane coupling agents discussed in this study are 3-aminopropyltriethoxysilane (CAS 01760-24-3)(APTES) and 3-methacryloxypropyl trimethoxysilane (CAS 02530-85-0) (MOP-TMS).
Moisture-Assisted Crack Growth in Polymer Adhesive-Glass Sandwich Geometries
Authors: Ritter J. E. , Lardner T. J. , Prakash G. C. , Stewart A. J. 
Published: April 2011

ABSTRACTMoisture-assisted crack growth in polymer/glass interfaces was measured as a function of the applied energy release using a four-point flexure test coupled with an inverted microscope. The specimens consisted of two glass plates bonded together with a thin layer of epoxy adhesive. Roughening the surface of one of the interfaces increased its fracture resistance sufficiently so that crack growth on this interface was inhibited. Thus, crack growth would occur only on the “smooth” interface (one with the least fracture resistance) or in the case where both interfaces were smooth, dual cracking occurred. Finite element analysis was used to explain the observed crack growth results.
Diffusion-Induced Precipitation in Arsenosilicate Glass (AsSG)
Authors: Srinivasan Radhika , Nguyen Tue , Ho Herbert L. , Nguyen Tai D. 
Published: April 2011

ABSTRACTDiffusion-induced precipitation in arsenosilicate glass (AsSG) under high temperature anneal is studied by high resolution Transmission Electron Microscopy (TEM), and other techniques. Polycrystalline precipitates of a few hundred angstroms in size have been observed near the interface of AsSG and the silicon substrate, covering the entire interface area after high temperature anneal. It is proposed that high concentrations of arsenic (above the solid solubility limit) precipitate initially at nucleation sites near the AsSG/silicon interface. Further anneal-induced diffusion of arsenic to the interface promotes growth of the precipitates. As a result, the precipitates cover the entire interface area, and impede further As diffusion into the Si substrate. Techniques to avoid the precipitation process without compromising the thermal budget or reduced arsenic diffusion have been explored and will be discussed.
Study on Epitaxial Growth of CeO2 (110)/Si(100) in Conjunction with Substrate Off-Orientation
Authors: Inoue Tomoyasu , Yamamoto Yasuhiro , Satoh Masataka , Ohsuna Tetsu , Myoren Hiroaki , Yamashita Tsutomu 
Published: April 2011

AbstractThe substrate off-orientation effect is systematically studied on epitaxial CeO2(110) layers on Si(100), and the crystalline quality is significantly improved by enhancement of domains whose 〈110〉 is perpendicular to the offset-direction (Si〈110〉). AFM measurements indicate that the CeO2 layer surface consists of stripe-shaped facets and that their size is typically 100˜200 nm long, 20 nm wide and ∼3 nm high for a 150 nm-thick layer. RHEED and XTEM reveal that CeO2〈110〉 axis is inclined from wafer normal by the off-angle. The step arrangement at Si surface observed by XTEM relates closely to the inclination of the facets. It is found that off-orientation (≥∼,2.5°) leads to single crystal layer formation. RBS analyses verify that the crystalline quality is significantly improved, especially at the surface. The best result is obtained at the off-angle of 2.5°.
Infrared Sensor For CVD Deposition Of Dielectric Films
Authors: Niemczyk Thomas M. , Franke James E. , Zhang Songbiao , Haaland David M. 
Published: April 2011

AbstractInfrared emission (IRE) spectra were obtained from two borophosphosilicate glass (BPSG) thin-film sample sets. The first set consisted of 21 films deposited on undoped silicon wafers, and the second set consisted of 9 films deposited on patterned and doped (product) wafers. The IRE data were empirically modeled using partial least-squares calibration to simultaneously quantify four BPSG thin-film properties. The standard errors of the determinations when modeling the 21 monitor wafers were < 0.1 wt% for boron and phosphorus content, 36 Å for film thickness, and 1.9°C for temperature. The standard errors of the determinations based on the product wafers were 0.13 wt% each for B and P content, 120 Å for film thickness, and 5.9°C for temperature.
Synthesis of the Carrier Doped Infinite-Layer Films by rf Thermal Plasma Evaporation
Authors: Kume A. , Yakabe H. , Shiohara Y. , Koshizuka N. 
Published: April 2011

AbstractWe tried to deposit (Sr1−xCax)0.9CuO2-δ films, so-called “the infinite-layer” structure, of (100) SrTiO3 substrates by using radio-frequency thermal plasma evaporation. The crysta structure of these films was confirmed by X-ray diffraction to consist of the (00l) oriented infinite-layer structure. However, the temperature dependence of resistivity showed no superconductivity in spite of varying ratios of Sr/Ca. A description is given of attempts to induce superconductivity in the infinite-layer films by the introduction of holes, namely by O2 plasma annealing and Na-doping.