bluuebunny/crossref_metadata_2025_split huggingface dataset:
An Alternative Approach to Analyzing the Interstitial Decay from the End of Range Damage During Millisecond Annealing
Authors: Camillo-Castillo Renata , Law Mark E , Jones Kevin S 
Published: April 2011

ABSTRACTFlash-assist Rapid Thermal Processing (RTP) presents an opportunity to investigate annealing time and temperature regimes which were previously not accessible with conventional annealing techniques such as Rapid Thermal Annealing. This provides a unique opportunity to explore the early stages of the End of Range (EOR) damage evolution and also to examine how the damage evolves during the high temperature portion of the temperature profile. However, the nature of the Flash-assist RTP makes it is extremely difficult to reasonably compare it to alternative annealing techniques, largely because the annealing time at a given temperature is dictated by the FWHM of the radiation pulse. The FWHM for current flash tools vary between 0.85 and 1.38 milliseconds, which is three orders of magnitude smaller to that required for a RTA to achieve similar temperatures. Traditionally, the kinetics of the extended defects has been studied by time dependent studies utilizing isothermal anneals; in which specific defect structures could be isolated. The characteristics of Flash-assist RTP do not allow for such investigations in which the EOR defect evolution could be closely tracked with time. Since the annealing time at the target temperature for the Flash-assist RTP is essentially fixed to very small times on the order of milliseconds, isochronal anneals are a logical experimental approach to temperature dependent studies. This fact presents a challenge in the data analysis and comparison. Another feature of Flash-assist RTP which makes the analysis complex is the ramp time relative to the dwell time spent at the peak fRTP temperature. As the flash anneal temperature is increased the total ramp time can exceed the dwell time at the peak temperature, which may play a significantly larger role in dictating the final material properties. The inherent characteristics of Flash-assist RTP have consequently required the development of another approach to analyzing the attainable experimental data, such that a meaningful comparison could be made to past studies. The adopted analysis entails the selection of a reference anneal, from which the decay in the trapped interstitial density can be tracked with the flash anneal temperature, allowing for the kinetics of the interstitial decay to be extracted.
Phase Change in (GeTe)1-x(Sb2Te3)x Investigated by Hard X-ray Photoemission Spectroscopy
Authors: Kobayashi Keisuke , Kim Jung-Jin , Matsunaga Toshiyuki , Kifune Kouichi , Ikenaga Eiji , Kobata Masaaki , Ueda Shigonori , Kojima Rie , Yamada Noboru 
Published: April 2011

ABSTRACTThe mechanism of the fast reversible change between the amorphous and crystalline phases in (GeTe)1−x(Sb2Te3)x (GST) has not yet been fully understood. The crystalline phase has been identified as having a NaCl-type cubic structure with random occupation of the A sites by Ge, Sb and vacancies, and 100% occupation of B sites by Te. This fact calls our attention to a possible close relation to the inherent crystal bonding instability observed for the average five valence electrons (<5>) family. We present here the results of systematic hard X-ray photoemission experiments on GST films with various compositions in both the amorphous and crystalline phases, and discuss that a similar chemical bonding instability does indeed play an essential role in the phase change mechanism in GST. We propose a model for the fast phase change, in which 6 fold to 3 fold transition of p-like bonding play an essential role, in this class of materials.
Universal glass dynamics in PCM nano-glasses
Authors: Karpov I. V. , Mitra M. , Kau D. , Spadini G. , Karpov V. G. , Kryukov Y. A. 
Published: April 2011

ABSTRACTThe classical double well potential (DWP) model known to explain many phenomena in glasses, is extended to the nano glasses of chalcogenide phase change memory (PCM). We describe simple analytical expressions for the temporal drift of PCM reset parameters. The threshold voltage Vth and the amorphous state resistance R are shown to drift with the time (t) as deltaVth ∝ ν propotional to ln t and R proportional to t power alpha respectively in broad intervals spanning many decades in time. These dependencies saturate at long enough times that can be shorten with temperature increase. All the available data on the PCM drift are shown to be fully consistent with DWP model.
Characterization of RF magnetron sputtered Se-doped Ge2Sb2.3Te5 thin films
Authors: Wagner Tomas , Gutwirth Jan , Orava Jiri , Prikryl Jan , Bezdicka Petr , Bartos Miroslav , Vlcek Milan , Frumar Miloslav 
Published: April 2011

ABSTRACTRF magnetron sputtering technique has been used to deposit new films potentially applicable in phase-change memories. Ge2Sb2Te5 seems to be promising material, but it is not clear whether it is optimum composition for such application. We studied different deposition condition and deposition of films doped by excess of Sb and doped also by Se, which equally replaces Te atoms compare to Ge2Sb2Te5. The sputtering target composition for our study was Ge2Sb2.3Te4Se1. Sputtered films contained less Se than target. Deposited films were characterized as-deposited and after thermal treatment in temperature range 30 − 300 °C.
In pursuit of “super”high-k ternary oxides: aqueous CSD and material properties
Authors: Hardy An , Van Elshocht Sven , D'Haen Jan , De Gendt Stefan , Van Bael Marlies K. , Heyns Marc , D'Olieslaeger Marc , Mullens Jules 
Published: April 2011

ABSTRACTImportant material properties of dielectric oxide films fabricated by aqueous chemical solution deposition, such as crystallization, topography, contamination and interfacial layer were evaluated and related to the films' dielectric properties.Functional ultrathin films (<20 nm thickness) of zirconia, barium zirconate and strontium niobate were deposited. The films were all subjected to the same thermal treatment, based on the high similarity of their precursors' thermal decomposition behavior. The evolution of the films' chemical purity as a function of temperature and the effect of annealing on the interfacial SiO2 layer was studied by grazing angle ATR-FTIR. The films' crystallization behavior was dependent on film thickness and composition as shown by high temperature XRD. C-V characterization of the films demonstrated a k-value in the same order of magnitude as for the ZrO2 reference material. This is lower than the bulk material's value, thus leaving room for further optimization of the current materials or alternatively selection of other material compositions.
The Study of Hafnium Silicate by Various Nitrogen Gas Annealing Treatment
Authors: Suh Dong Chan , Chung Kwun Bum , Cho Mann-Ho , Cho Young Dae , Ko Dae-Hong 
Published: April 2011

ABSTRACTPost annealing of Hf-silicate thin film grown by ALD was done with different kind of nitrogen gas and order of annealing. Annealing conditions are as follows: (1) NO gas only, (2) NH3 gas only, (3) NO gas + NH3 gas, and (4) NH3 + NO gas. With these conditions, the physical and electrical properties of nitrided Hf-silicate films were analyzed. Content of nitrogen is decreased with post NO gas annealing. In case of NH3, content of nitrogen is much higher than NO case. Most nitrogen atoms were distributed between Si substrate and Hf-silicate film for NO gas annealing. However, with NH3 gas annealing, nitrogen atoms were distributed in the whole Hf-silicate film evenly. Leakage current was decreased with post NO gas annealing and flat band voltage was also decreased.
Photo-induced Deposition of Nanostructured Thin Films by UV-exposure of Heteroleptic Ti-alkoxide Solutions
Authors: Musgraves J. David , Potter B.G. , Boyle Timothy J. 
Published: April 2011

ABSTRACTPhotodeposited physical relief structures have been formed via the UV-irradiation of solutions of the heteroleptic titanium alkoxide, (OPy)2Ti(TAP)2. Raman studies of the films produced confirm the photoinitiation of hydrolysis and condensation reactions in the molecular structure, leading to the development of an insoluble solid phase. Using a shadow mask technique, these films were deposited directly from solution with microscale patterning and their structure and properties were studied as a function of both irradiation conditions (UV-fluence and intensity) as well as precursor solution chemistry (water content). Variations in nanostructure are visible in scanning electron micrographs, with a higher solution water content producing a more condensed, i.e. less porous, film.
Correlation Between Microstructure and Optical Properties of ZnO Based Nanostructures Grown by MOCVD
Authors: Falyouni Farid , Barjon Julien , Sallet Vincent , Lusson Alain , Garry Guy , Galtier Pierre 
Published: April 2011

ABSTRACTThe correlation between structural properties of ZnO sharp conical needles grown by Metallorganic Chemical Vapor Deposition (MOCVD) on sapphire substrate and their optical signature measured by low temperature cathodoluminescence (CL) is investigated. Transmission Electron Microscopy (TEM) shows the excellent structural properties of these needles from their base up to the end of the tip. In order to probe the emission of the needles along their length, UV CL mapping has been performed at low temperature on a single needle previously characterized by TEM. A clear blue shift of 25meV is observed for the excitonic emission close to the needle tip. This shift is too high to be fully attributed to quantum confinement. Although, it qualitatively agrees with previous observations which assigned it to a surface contribution becoming dominant upon size shrinking, the effect is less pronounced. The results are discussed in term of surface quality and other possible contributions associated to a decrease of the n-dopant concentration and to quantum confinement effect close to the tip.
Characterization of Nanoparticles by Light Scattering
Authors: Nobbmann Ulf , Morfesis Ana 
Published: April 2011

ABSTRACTMetal oxide nanoparticles are increasingly being used to prepare new nanocrystaline materials. By controlling formulations of multicomponent metal oxides; crystal shape, structure and surface properties important in the design of new materials are gaining acceptance for many applications. Metal oxide composites are being used to design new electronic, magnetic and optical properties into material structures. Often these are formulated and processed in slurries or aqueous suspensions. A key parameter of controlling the design of such colloidal nanoparticle systems is their particle size. There are different methods by which a particle size can be obtained. Comparing stated dimensions from one method with those from another must be approached with caution: distributions in terms of volume, number or scattering intensity usually produce vastly differing results – despite expressing the exact same physical situation. Another fundamental colloidal characteristic is the zeta potential. This parameter effectively quantifies electrostatic stabilization, and can be used in formulation development to avoid instability as a result of particle-particle attraction.Both size and zeta potential are easily measured by light scattering. Small amounts of aggregates are quickly detected by dynamic light scattering (DLS). The zeta potential is rapidly measured by electrophoretic light scattering (ELS). As an example of a typical metal oxide, data for TiO2 nanoparticles are presented.Light scattering is a versatile measurement technique and ideally suited as a metrology of choice for size and stability quantification of nano-sized materials.
Evidence of bayerite clusters within the AAO amorphous bulk alumina. Consequence for AAO SANS matching properties.
Authors: Lagrené Karine , Zanotti Jean-Marc 
Published: April 2011

ABSTRACTSmall Angle Neutron Scattering (SANS) and neutron diffraction are used to probe the structure of Anodized Aluminium Oxide (AAO) in an extended Q range, from 7.10−3 to 16 Å−1. In the small angle region [7. 10−3 Å−1 − 7. 10−2 Å−1], impregnation of a D2O/H2O mixture within the AAO porous structure, leads to a dramatic decrease of the coherent SANS signal by two orders of magnitude, but perfect matching of the membrane cannot be reached. We explain such an imperfect matching by the presence of 1 nm in size Bayerite domains within the bulk of the amorphous Al2O3 matrix, as detected by Neutron diffraction in the [0.3 Å−1 − 4 Å−1] Q range. Traces of sulfur, probably incorporated during the anodic synthesis process in a H2SO4 solution, are also detected by Scanning Electron Microscopy with Energy Dispersive X-ray analysis (SEM-EDX). We estimate the AAO neutron scattering length to be 4.22 1010 cm−2. This value is an important input, when taking advantage of neutron contrast matching to probe the large scale filling homogeneity (adsorption of a liquid or deposition of a solid) within the porous structure of AAO membranes.
Tunable Thin Film Integrated Material Characterizations for Microwave Applications
Authors: Al Ahmad Mahmoud , Payan Sandrine , Michau Dominique , Maglione Mario , Plana Robert 
Published: April 2011

AbstractIn this work, a simple, fast and repeatable technique is proposed for tunable integrated thin film material characterizations. The technique does not depend on the type of material development method or special thin film processing. Moreover, additional structures or calibrations are not required. The proposed method can be used to determine the loss of a thin film material using radio frequency capacitance measurements in both parallel plate and interdigital topologies. An analytical formulation is given for the computation of the film loss based on its measured input impedance which is extracted from the measured scattering parameters. This technique is used for barium strontium titanate (BST) thin film material characterizations.
Stacked Boron Doped Poly-Crystalline Silicon-Germanium Layers: an Excellent MEMS Structural Material
Authors: Claes Gert , Van Barel Gregory , Van Hoof Rita , Du Bois Bert , Gromova Maria , Verbist Agnes , Van der Donck Tom , Decoutere Stefaan , Celis Jean-Pierre , Witvrouw Ann 
Published: April 2011

ABSTRACTIn this work stacked boron doped poly-crystalline Silicon-Germanium (poly-SiGe) layers, which can be applied as structural MEMS layers, were studied. A standard 1 µm base layer, deposited at 480 ºC chuck temperature, is stacked until the required thickness (e.g. 10 x for a 10 µm thick layer). This 1 µm base layer consists of a PECVD seed layer (+/− 75 nm), a CVD crystallization layer (+/− 135 nm) and a PECVD layer to achieve the required thickness with a high growth-rate. The top part of this PECVD layer can optionally be used for optimizing the stress gradient by a stress compensation layer. This approach resulted in 4 µm thick poly-SiGe MEMS structural layers with low tensile stress (50 MPa), low resistivity (2 mΩcm) and a low strain gradient (< 1*10−5/µm).
Dispersive Evaluation and Self-Sensing of Single Carbon Fiber/CNT-Epoxy Composites using Electro-Micromechanical Techniques
Authors: Park Joung-Man , Jang Jung-Hoon , Wang Zuojia , Kim Pyung-Gee , Lee Woo-Il , Park Jong-Kyoo , DeVries Lawrence K. 
Published: April 2011

ABSTRACTSelf-sensing and interfacial evaluation were investigated with different dispersion solvents for single carbon fiber/carbon nanotube (CNT)-epoxy composites by electro-micromechanical technique and acoustic emission (AE) under loading/subsequent unloading. Optimized dispersion procedure was set up to obtain improved mechanical and electrical properties. Apparent modulus and electrical contact resistivity for CNT-epoxy composites were correlated with different dispersion solvents for CNT. CNT-epoxy composites using good dispersion solvent showed higher apparent modulus because of better stress transferring effect due to relatively uniform dispersion of CNT in epoxy and enhanced interfacial adhesion between CNT and epoxy matrix. However, good solvent showed high apparent modulus but low thermodynamic work of adhesion, Wa for single carbon microfiber/CNT-epoxy composite. It is because hydrophobic high advanced contact angle was shown in good solvent, which can not be compatible with carbon microfiber well. Damage sensing was also detected simultaneously by AE combined with electrical resistance measurement. Electrical resistivity increased stepwise with progressing fiber fracture due to the maintaining numerous electrical contact by CNT.
Dielectric Charging in Low Temperature Silicon Nitride for RF-MEMS Capacitive Switches
Authors: Daigler Richard , Papaioannou George , Papandreou Eleni , Papapolymerou John 
Published: April 2011

ABSTRACTThe paper presents a systematic investigation of dielectric charging in low temperature silicon nitride for RF-MEMS capacitive switches. The investigation takes includes both the effect of dielectric film thickness as well as the effect of metal contacts. The investigation demonstrates that the charging process is asymmetric. It is shown that the amount of stored charge depends significantly on the dielectric film thickness, which is caused from the contribution of the space charge polarization mechanism. Finally, the results are compared with those of higher temperature silicon nitride.
Thick Film Capacitors with Variable Tc on Cu Foils
Authors: Kim Byeong Kon , Shin Dong Joo , Song Jun Kwang , Cho Yong Soo 
Published: April 2011

ABSTRACTHigh k dielectric thick films, consisting of BaTiO3, a low softening glass and fluoride compounds, were studied to apply them as potential low temperature N2-fireable capacitors on commercially-available Cu foils. Different additive combinations of LiF, ZnF2 and BaF2 were specifically compared in terms of dielectric constant, dielectric loss and Curie temperature (Tc) for the purpose of optimizing dielectric performance. The thick film consisting of 95BaTiO3-1.5LiF-1.5ZnF2-2 bismuth borosilicate glass exhibited the best performance, i.e., a dielectric constant of 2,382 and a dissipation factor of 0.021 at Tc of 27°C at the firing temperature of 950°C. This result can be regarded as one of the best performance, compared to literature reported on embedded capacitors in Cu-PCB applications. No apparent Cu-diffusion was detected across the Cu-thick film-Cu foil structure.
Linear FMCW Laser Radar for Precision Range and Vector Velocity Measurements
Authors: Pierrottet Diego , Amzajerdian Farzin , Petway Larry , Barnes Bruce , Lockard George , Rubio Manuel 
Published: April 2011

ABSTRACTAn all fiber linear frequency modulated continuous wave (FMCW) coherent laser radar system is under development with a goal to aide NASA's new Space Exploration initiative for manned and robotic missions to the Moon and Mars. Linear FMCW lidar has the capability of high resolution range measurements, and when configured into a multi-channel receiver system it has the capability of obtaining high precision vector velocity measurements. Precision range and vector velocity data are beneficial to navigating planetary landing pods to the pre-selected site and achieving autonomous, safe soft-landing. This paper discusses the design of a second generation prototype system under development at NASA Langley Research Center and presents preliminary performance data obtained from field experiments.
All-Optical Active Plasmonics Based on Ordered Au Nanodisk Array Embedded in Photoresponsive Liquid Crystals
Authors: Zheng Yue Bing , Hsiao Vincent K. S. , Huang Tony Jun 
Published: April 2011

ABSTRACTWe propose a new approach towards all-optical active plasmonics based on ordered Au nanodisk arrays embedded in azobenzene-doped liquid crystals (LCs). Upon photoirradiation, the doped LCs went through phase transition induced by trans-cis photoisomerization of the azobenzene molecules. The phase transition led to the change in the refractive index of the LCs experienced by incident light, and enabled reversible tuning of the localized surface plasmon resonance (LSPR) of the embedded Au nanodisks. The tuning utilized the sensitivity of the LSPR of the Au nanodisks to the change in the surroundings' refractive index. Experimental observations on both peak shift and intensity change of the LSPR matched those from discrete dipole approximation (DDA) calculations.
Optimization of Plasmonic Nano-Antennas
Authors: Sendur Ibrahim Kursat , Karabasoglu Orkun , Baran Eray Abdurrahman , Kiziltas Gullu 
Published: April 2011

ABSTRACTInteraction of light with plasmonic nano-antennas is investigated. First, an extensive parametric study is performed on the material and geometrical effects on dipole and bow-tie nano-antennas. The transmission efficiency is studied for various parameters including length, thickness, width, and composition of the antenna as well as the wavelength of incident light. The modeling and simulation of these structures is done using 3-D finite element method based full-wave solutions of Maxwell's equations. Next, a modeling-based automated design optimization framework is developed to optimize nano-antennas. The electromagnetic model is integrated with optimization solvers such as gradient-based optimization tools and genetic algorithms.
Silicon-compatible Ultra-long-range Surface Plasmon Modes
Authors: Sabbah Ali , Durfee C. G. , Collins R. T. , Furtak T. E. , Hollingsworth R. E. , Flammer P. D. 
Published: April 2011

ABSTRACTSurface plasmon waveguides show promise as sub-wavelength signal elements in integrated optoelectronic devices. Modulation of these signals requires designs that are compatible with existing semiconductor fabrication technologies, such as MOS structures. We show that waveguides of this type are not only practical, but offer distinct advantages. In particular, an asymmetric geometry is shown to support very long-range modes. In preliminary experimental results we report the observation of these modes in an visible wavelength analog structure. Our models predict that these characteristics can be maintained while shifting the operating conditions to the fiber communications band in waveguides constructed in silicon.
From Process Assumptions to Development to Manufacturing
Authors: Standaert Theo , Gabor Allen , Simon Andrew , Lisi Anthony , Peters Carsten , Child Craig , Kioussis Dimitri , Engbrecht Edward , Chen Fen , Baumann Frieder , Lembach Gerhard , Wendt Hermann , Choi Jihong , Linville Joseph , Chanda Kaushik , Kumar Kaushik , Davis Kenneth , Economikos Laertis , Nicholson Lee , Chae Moosung , Lustig Naftali , Bravo Oscar , McLaughlin Paul , Srivastava Ravi Prakash , Filippi Ronald , Sankaran Sujatha , Bolom Tibor , Menon Vinayan , McGahay Vincent , Li Wai-Kin , Tseng Wei-Tsu , Landers William , Choi Youngjin , Biery Glenn , Gow Thom 
Published: April 2011

ABSTRACTA tool has been developed that can be used to characterize or validate a BEOL interconnect technology. It connects various process assumptions directly to electrical parameters including resistance. The resistance of narrow copper lines is becoming a challenging parameter, not only in terms of controlling its value but also understanding the underlying mechanisms. The resistance was measured for 45nm-node interconnects and compared to the theory of electron scattering. This work will demonstrate how valuable it is to directly link the electrical models to the physical on-wafer dimensions and in turn to the process assumptions. For example, one can generate a tolerance pareto for physical and or electrical parameters that immediately identifies those process sectors that have the largest contribution to the overall tolerance. It also can be used to easily generate resistance versus capacitance plots which provide a good BEOL performance gauge. Several examples for 45nm BEOL will be given to demonstrate the value of these tools.