bluuebunny/crossref_metadata_2025_split huggingface dataset:
P‐10: CMOS‐Like Ambipolar Organic/Inorganic TFTs for AMLCD and AMOLED Applications
Authors: Chu Yi‐Hsing , Wu Gao‐Ming , Chuang Chiao‐Shun , Yu Wei‐Kuan , Chen Fang‐Chung , Shieh Han‐Ping D. , Mo Chi‐Neng , Li Huai‐An , Chiang Mei‐Tsao 
Published: August 2010

AbstractAir‐stable ambipolar thin‐film transistors (TFTs) based on double active layer of pentacene / a‐IGZO (amorphous In2O3‐Ga2O3‐ZnO) have been fabricated on SiO2 /p‐Si substrates. The a‐IGZO exhibits n‐channel behavior, while pentacene presents p‐channel characteristics. Most n‐type organic materials are easily affected by moisture and oxygen, thus the measurement of ambipolar devices in ambience air is difficult. However, a‐IGZO not only has outstanding mobility but also has good stability while being measured in ambient air. In our work, a CMOS‐like inverter was constructed by using two identical ambipolar transistors and the voltage gain up to 70 was obtained. The inverter can be operated in both the first and the third quadrants simplifying circuit design for AMFPD applications.
P‐11: DC/AC Electrical Instability of R.F. Sputter Amorphous In‐Ga‐Zn‐O TFTs
Authors: Fung Tze‐Ching , Abe Katsumi , Kumomi Hideya , Kanicki Jerzy 
Published: August 2010

AbstractThe paper presents the study of electrical instability of RF sputter amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistor (TFT) induced by negative steady‐state (or D.C.) bias‐temperature‐stress (BTS). Similarly to positive BTS results [8], the stress time evolution of the threshold voltage shift (Δ Vth) induced by negative BTS under different stress voltages and temperatures can all be described by the stretched‐exponential model. for the first time, we also present the results for Δ Vthunder pulse (or A.C.) BTS. The Δ Vthfor positive A.C. BTS is found to have a pulse‐period dependence while a huge reduction of Δ Vthis found for all negative A. C. BTS results. This might suggest the time for holes to accumulate near the a‐IGZO/ SiO2interface is much longer than the time for electrons. The effect of bi‐polar stressing is also discussed.
P‐16: A Scan Driver Circuit Using Transparent Thin Film Transistors
Authors: Hwang Tong‐Hun , Hong Seok‐in , Hong Won‐kee , Cui Wen‐Hai , Yang Ik‐Seok , Kwon Oh‐Kyong , Byun Choon‐Won , Park Sang‐Hee Ko , Hwang Chi‐Sun , Cho Kyong Ik 
Published: August 2010

AbstractIn this paper, we proposed two types of integrated scan driver circuits using only n‐channel zinc‐oxide (ZnO) thin film transistors (TFTs). One is the scan driver circuit for low‐power consumption and the other scan driver is for robustness to threshold voltage and mobility variation. The proposed scan driver for low‐power consumption is embedding level shifter and its power consumption was 1.4 mW. The scan driver for robustness used positive feedback circuits as pull‐up devices. By simulation results, the proposed scan driver has robustness in the frequency, temperature, and process variation compared to conventional scan drivers. Also, two proposed scan drivers have advantages of full swing output range from VDD to VSS.
P‐17: High‐Uniformity 2T1C AMOLED Panels by Using a New Built‐In Trimming Method
Authors: Lee Te‐Yu , Chiu Chih‐Chieh , Lin Chrong Jung , King Ya‐Chin , Chang Mei‐Ling , Tseng Chih‐Chiang , Liu Ping‐Lin , Liu Chih‐Chung 
Published: August 2010

AbstractA new built‐in trimming scheme boosting the driving current through analog programming of the driving pTFT is proposed. The current variation on the panel can be controlled within 1%. This blanket boosting scheme is demonstrated on a 2.4‐inch AMOLED panel with non‐uniformity improved from 8.1% to 4.9%.
P‐18: Highly Stable Amorphous Silicon Thin Film Transistor AMOLED Panel Employing Optical Feedback Compensation Pixel Circuit
Authors: Shin Hee‐Sun , Lee Jeong‐Soo , Park Sang‐Geun , Han Min‐Koo , Yoo Juhn‐Seok , Kim Chang‐Dong , Kang InByeong 
Published: August 2010

AbstractThe optical feedback scheme can compensate the threshold voltage variation of TFT and OLED as well as the degradation of OLED efficiency. The new optical feedback pixel circuit integrating a‐Si:H TFT photo sensor which is designed with the reversed diode‐connected TFT is proposed and fabricated. We have fabricated the 0.85 inch AMOLED panels (56 pixels × 84 pixels) employing the new optical feedback pixel circuits. The luminance degradation of AMOLED panel employing the proposed pixel after 12 hours chess board patterned stress is less than 12%, while the conventional one has 37% of luminance degradation.
P‐19: Vth Shift Overcompensation in AMOLEDs for Differential Aging Compensation
Authors: Miwa Koichi , Maekawa Yuichi , Tsujimura Takatoshi 
Published: August 2010

AbstractAMOLED displays suffer from differential aging of pixels, leading to image burn‐in on a display. Vth shift ofa‐Si TFT can be utilized as a stress monitor of an OLED to compensate for differential aging. A Vth shift overcompensation pixel circuit is proposed and simulation results are provided. The simulation indicates that the Vth overcompensation improves burn‐in lifetime by a factor of 10 compared with a conventional Vth compensation.
P‐20: Light Induced Instability of Nanocrystalline Silicon Thin Film Transistor
Authors: Kim Sun‐Jae , Ha Tae‐Jun , Park Hyun‐Sang , Kuk Seung‐Hee , Kim Yong‐Jin , Han Min‐Koo 
Published: August 2010

AbstractWe fabricated bottom gate nanocrystalline silicon (nc‐Si) thin film transistor (TFT). We report the instability phenomena of the nc‐Si TFT under light illumination under gate bias stress for the first time. The comparison with hydrogenated amorphous silicon (a‐Si:H) TFT was carried out. Under only light illumination was induced, the transfer characteristic of nc‐Si TFT was almost unchanged. Also, positive gate bias stress hardly changed the VTHof nc‐Si TFT, while that of a‐Si:H TFT was shifted considerably. However, under negative bias stress, a‐Si:H TFT showed rather high stability. Instability mechanism under light illumination under gate bias stress was different in nc‐Si TFT and a‐Si:H TFT. The VTHshift of both TFT was opposite direction.
P‐22: A Single Cell‐Gap Transflective LCD with Active Level‐Shifting Technology
Authors: Cho Yong Seok , Yeo Yong Seok , Jang Yong‐Kyu , Ahn Seonhong , Kim Kyeong Hyeon , Kim Sang Soo 
Published: August 2010

AbstractA novel single cell‐gap transflective liquid crystal display (LCD) with active level—shifting technology has been developed. Pixel structure design enables different voltages to be independently applied to transmissive and reflective sub‐pixels. The prototype 2.2‐inch vertical alignment (VA) mode transflective LCD achieves a 17% increase in aperture ratio compared to the conventional dual cell‐gap approach. The reflective mode has 15:1 contrast ratio and 3.6% reflectance, and the transmissive mode accomplishes much higher contrast ratio of 500:1, compared to 200:1 for the dual cell‐gap transflective LCD.
P‐23: High On‐Current a‐IGZO TFT
Authors: Lee Jae Sang , Chang Seongpil , Lee Sang Yeol , Koo Sang‐Mo 
Published: August 2010

AbstractWe investigated a‐IGZO TFT with ZrO2 gate‐dielectric having high on‐current. High‐capacitance is necessary to lead high on‐current. Among many candidates, ZrO2 which is one of the most promising high‐k materials has high capacitance originated high dielectric constant. We fabricated a‐IGZO TFTs with ZrO2 gate‐dielectric and analyzed electrical performances. Especially much higher mobility of 26 cm2/Vs and on‐current of ∼6 mA than reported in other previous work are obtained. Also the threshold voltage (Vth), the on‐to‐off current ratio and the subthreshold swing are obtained of 3.6 V, of 9.6 × 106 and 0.6 V/decade, respectively.
P‐182L: Late‐News Poster: Improvements in the Device Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors by XeCl Excimer Laser Irradiation
Authors: Du Ahn Byung , Shin Hyun Soo , Jeong Woong Hee , Kim Gun Hee , Kim Hyun Jae , Choi Sung‐Hwan , Han Min‐Koo 
Published: August 2010

AbstractThe effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a‐IGZO) thin films was investigated. The resistivity of the a‐IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as‐deposited thin film from 104 to 10−3 Ωcm. The source/drain regions were selectively laser irradiated in the a‐IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had a field‐effect mobility of 21.79 cm2/Vs, an on/off ratio of 6.0 × 107, a threshold voltage of −0.15 V, and a subthreshold swing of 0.26 V/decade.
P‐25: Viewing Zone Connection of Depth Fused 3D (DFD) Display
Authors: Date Munekazu , Andoh Yasuko , Takada Hideaki , Ohtani Yohsimitsu 
Published: August 2010

AbstractA DFD display consists of a stack of two transparent emitting screens. Though it can produce natural 3D images, its viewing zone has not been particularly wide to date. We expanded it by connecting viewing zones of DFD images.
P‐26: Excellent Image Quality Display with Upgraded AFFS Plus Technology for Automotive Applications
Authors: Park Jung Ho , Oh Eui Seok , Shin Young Joon , Lee Cheol Hwan , Park Kwang Hyun , Lee Jeong Ha , Kim Seung Hwan , Cho Yoon Sung 
Published: August 2010

AbstractIn this paper, we have developed 8.0″ WVGA grade's automotive application with advanced fringe‐field switching (conventional AFFS+) under wide temperature(−40∼105 °C). Besides, we have achieved high contrast ratio(> 1000:1), fast response time(≤ 25ms), excellent color characteristics and wide viewing angle. We propose new AFFS+ design for high image quality Display.
P‐200L: Late‐News Poster: Louver Screens as Multi‐Functional Information Displays
Authors: Daniel Jurgen 
Published: August 2010

AbstractLouver‐type displays are a novel application for a variety of display technologies. Their form factor and their appearance can be quickly changed by rotating or moving the louver segments. In rooms, this type of display may be placed in the location of a door or window. Other applications such as in advertisement are envisioned.
P‐29: Physiological and Psychological Measurements of Visual Fatigue for TVs in a Home Viewing Environment
Authors: Sakamoto Kiyomi , Aoyama Shoichi , Asahara Shigeo , Yamashita Kuniko , Okada Akira 
Published: August 2010

AbstractIn this study, we experimentally evaluated visual fatigue for large‐Sized TVs in a home viewing environment by physiological and psychological measurements using 42‐ and 65‐inch PDP displays with two kinds of content. for less visual fatigue, the results indicate that the optimum viewing distance lies between 165 and 220 cm, indicating a semi‐absolute distance, rather than such a strict relative distance as three times the screen height (3H). Moreover these results indicate that the viewing distance for less visual fatigue and a closer feeling of involvement might be found in between the two distances.
11.3: Depth‐Image‐Based Rendering (DIBR) Using Disocclusion Area Restoration
Authors: Jeong Young Ju , Kwak Youngshin , Han Youngran , Jung Yong Ju , Park Du‐Sik 
Published: August 2010

AbstractThe embodiment of 3D display has been evolving from stereoscopic 3D system into multi‐view 3D system, which provides images corresponding to the different visual points. Currently because of input source format such as two dimensional image, multi‐view display system needs technology to generate virtual view images of multi visual points. Due to the changes in the visual points, occlusion region of the original image becomes disoccluded area, resulting in problem to restore the output image information which is exclusive of input image. This paper proposes the method for generation of multi‐view images through two steps which are depth map refinement and disocclusion area estimation and restoration. The first step ‘depth map refinement’ removes depth map noise and compensates mismatches between RGB and depth, preserving boundaries and object shape. The second step ‘the disocclusion area estimation and restoration’ predicts disocclusion area using disparity and restore information of the area using neighbor frame's information which is the most similar with occlusion area.
P‐42: 12‐Bit Source Driver with Hybrid Transistor Digital to Analog Converter
Authors: Choi Jin‐Chul , Kim Jong‐Hoon , Kim Sun‐young , Jang Chul‐Sang , Park Joon‐Ha , Nah Keon‐Soo , Shin Hyun‐Ho 
Published: August 2010

AbstractTo develop 10‐bit or higher gray scale source driver for high resolution TFT‐LCD, digital to analog converter (DAC) is a key factor which determines cost since the chip size of DAC is about over 50% ofthat of the source driver. So we have developed new hybrid DAC architecture for a TFT‐LCD source driver integrating a significant number of such DAC to reduce the cost of driver IC.
P‐46: New Display Driving Method for Reducing Motion‐Blur Using Compact Arithmetic Circuits
Authors: Ishihara Tomoyuki , Inoue Akihiko , Kobayashi Masamitsu , Taguchi Minoru , Kumakura Takeshi , Ishida Yutaka , Kamei Katsuhiko , Yamada Akihisa 
Published: August 2010

AbstractWe have developed a new display driving method called Dual Picture Controlled Frame‐Rate Doubling (DPC‐FRD) and installed it in a prototype 52″ LCD TV. We have verified that DPC‐FRD enables the prototype TV to display moving pictures with less motion blur, without reduction of brightness and without large area flicker.
P‐50: The Temperature Compensated VCOM Calibrator Improves LCD Screen Quality
Authors: Kim Byoung Suk , Nachbaur Oliver , Rott Christian 
Published: August 2010

AbstractThis paper will discuss the temperature compensated VCOM calibrator to minimize the flickering and the image sticking of LCD over the entire ambient temperature range. The VCOM calibrator adjusts the VCOM voltage through an I2C compatible interface and provides the temperature compensation by simple external NTC thermistor network. The temperature compensated VCOM calibrator enables the LCD to have the best screen quality and the minimized flicker and image sticking over the entire ambient temperature range.
P‐53: Precise Location of Touch Panel by Employing the Time‐Domain Reflectometry
Authors: Huang Chi‐Fang , Hung Yu‐Ching , Liu Chia‐Lin 
Published: August 2010

AbstractUsing Time‐Domain Reflectrometry proposed in present work, the position of finger touching on a touch panel can be precisely located. This application avoids from the necessary complex matrix sensor circuit for locating touch points. Even based on the present simple idea, the locations of multiple touching points can be detected.
4.1: A Variable Curve Backlight
Authors: Montgomery David J. , Walton Harry , Ishida Takeshi , Tsuda Yusuke 
Published: August 2010

AbstractA new backlight is presented for flexible applications. The backlight maintains central brightness and on‐ and off‐axis uniformity performance as a normal backlight, but at a large range of curvatures and shapes, from flat to 50mm local curvature. Results from a demonstration sample with a display are presented.
P‐57: Study on the Wet Processable Antimony Tin Oxide (Transparent Conducting Oxide, TCO) Using Anode for PLED Device Instead of ITO
Authors: Song Insung , Ma Dongjoon , Heo Soowon , Moon Dookyung 
Published: August 2010

AbstractIn this study, fabricated a PLED device by using the wet processable Antimony Tin Oxide(ATO) as the transparent electrode instead of the Indium Tin Oxide (ITO) and measured its electrical and optical characterization. By controlling annealing temperature and thickness of the ATO, 90% or more of visible region transparency and sheet resistance of 30Ω/°C was obtained.
P‐58: Effective Order Assignment for Color Filter Fabs
Authors: Chen James C. , Chao Gary C. , Sun Cheng‐Ju , Chao Kuo‐Jung , Chien Jui‐Wei , Chen Chih‐Cheng , Mo Chi‐Neng , Peng Tzu‐Wei , Wei Yu‐Yao , Feng Chao‐Hsuan , Liu Yu‐Chen , Chiang Mei‐Tsao 
Published: August 2010

AbstractThis research proposes an Order Assignment Policy (OAP) to effectively and efficiently assign orders to color filter fabs. The objectives of this research is to minimize order tardiness and minimize the variance of fab utilization by taking into account fabs ' available capacity and orders ' due date, batch size, product type, and process routing. OAP consists of three modules: Order Priority Module (OPM), WIP‐Pulling Module (WPM), and Order Release Module (ORM). OPM assigns different priorities to orders according different dispatching rules. WPM pulls WIP from the end of the process route to meet the orders in Master Production Schedule (MPS). If WIP cannot meet the MPS requirement, ORM is executed to select one of the fabs and release lots into this fab. An AutoMod simulation model is developed, and data of real color filter fabs are collected and used to evaluate OAP's performance based on the design of experiments. Preliminary simulation results show that the combination of OPM using Earliest Due Date (EDD) and ORM using Least Fab Utilization (LFU) leads to the least average lateness of orders, while OPM using Largest Batch Size (LBS) and ORM using LFU results in the least variance of fab utilization.
P‐60: Surface Modifications of Flexible Gas Barrier Films by Mimicking Structures of Nature
Authors: Choi Jin Hwan , Kim Young Min , Park Young Wook , Jeong Jin Wook , Park Tae Hyun , Dong Ki Young , Kwon Jae Hong , Lee Jin Woo , Cho Gyu Chan , Ju Byeong Kwon 
Published: August 2010

AbstractThe present work demonstrates transparent polymeric flexible gas barrier films, via mimicking structures of nature. SiO2 hydrophilic regions have been formed by mesh mask deposition and the nano‐patterned hydrophobic surfaces were fabricated by nano‐imprinting techniques. The characteristics of the moisture repellent hydrophobic surfaces and the moisture transfer from hydrophobic to hydrophilic regions are shown to yield enhanced moisture barrier performances.
P‐61: A Study on the Galvanic Reaction between Cu and Mo as Well as MoW for TFT‐LCDs by Using a Zero‐Resistance Ammeter
Authors: Lee Bo‐Hyun Seo Saing‐Hyuk , Lee In‐kyu , Seo† Jong Hyun , Jeon Jae‐Hong , Choe HeeHwan , Lee Kang‐Woong , Winkler Jörg , Reinfried Nikolaus , Knabl Wolfram 
Published: August 2010

AbstractRecently, copper metallization has been widely developed in TFT‐LCD industry, because of its lowest electrical resistivity compared to aluminum and its alloys. In addition, the copper metallization becomes a more significant issue in a high frequency driving technology for large sized TFT‐LCD panel. Since copper has a low adhesion force against the glass substrate, copper is inevitably used with an aid of an adhesive metal layer such as Ti, Ta and Mo. When dissimilar metals like copper and molybdenum are exposed together in a wet etchant, a typical galvanic reaction occurs and this results in an undercutting of copper line or partial stains on the metal surface after drying. The suitable taper angle of Cu line is difficult to obtain especially coupled with pure molybdenum. Such failures often lead to a bad performance of thin film transistor and the display quality. There are many literatures related to the copper metallization for TFT. However, a systematic approach on the galvanic reaction occurred in copper multilayered system has not been made. In this work, we investigated a feasibility of molybdenum alloy film (MoW) for copper metallization on the basis of the thin film analysis and the advanced electrochemical techniques such as Zero Resistance Ammeter (ZRA) method.
P‐63: Rib‐Less Ink‐Jet‐Printed 4‐In.‐Panel Color‐Filter Fabrication
Authors: Chen Huang‐Ming P. , Wu Siang‐Jhih , Cheng Jung‐An , Tong Feng‐Ching , Shieh Han‐Ping D. , Li Chi‐Hsin , Chou Kevin , Lin Yu‐Hsin L. 
Published: August 2010

AbstractA 4 “color filter panel was successfully prepared by rib‐less ink jet printing process. The smeared ink issue can be controlled by surface treatment on both Cr and glass with similar contact angle. The color line formation can be prepared by either two‐step printing process at room temperature or one‐step printing at elevated temperature. The thickness of red, green and blue films were about 1.2μm, 1.0μm and 1.0μm, respectively. The panel's NTSC value was estimated at 53.5±0.7%.
P‐64: New Drying Process without Pin‐Mura for Ink‐Jet Alignment Layer Printing of Large‐Sized LCDs
Authors: Tai Chia‐Hsuan , Tung Yuan‐Hung , Huang Yu‐Sheng , You Chang‐Feng , Tu Jung‐Kuo , Sugiura Norio 
Published: August 2010

AbstractA new drying process has been developed for ink‐jet alignment layer printing technology of large‐Sized LCDs. The system can prevent pin‐mura which was easily appeared in conventional drying process by optimizing independent X‐Z and Y‐Z directionally movable support pins with a single hot‐plate and an exhaust system. This development enabled us to mass‐produce >40″ LCD‐TV panels with high efficiency in our factory.
P‐66: Development of Uniform 14.1 Inch Full Color AMOLED Display by Using Highly Efficient Circular Nozzle Source
Authors: Jung Jae Hoon , Sung Un Cheol , Rhee Jung Soo , Kim Hoon , Kim Hyo Seok , Kim Sung Chul , Kim Sang Soo , Kim Sungmoon , Jeong Kwangho 
Published: August 2010

AbstractA structure and a design of device were developed to fabricate large‐scaled active matrix organic light‐emitting diode (AMOLED) display with a good uniformity and color purity. with these technologies, we developed a full color 14.1 inch WXGA AMOLED display. for the fabrication of AMOLED with very uniform EL layers, a highly efficient thermal evaporation source is essential since it makes uniform thin films. These technologies will make it possible the OLED applications to uniform displays such as laptop monitors and TVs.
P‐187L: Late‐News Poster: Optimized ODF Design Rule for Mobile & Application TFT‐Panel
Authors: Lim Junhwan , Ko Youngyik , Hwang Lyulyun , Park Seungyik , Park Jinsan , Jung Heechul , Hwang Soowoong 
Published: August 2010

AbstractSmall sized TFT‐panel such as mobile & application product have different mura phenomenon comparing large‐Sized TFT‐panel in ODF(one drop filling) process. Unlike large‐Sized TFT‐panel, for small sized TFT‐panel, push mura and bubble is more serious than gravity mura because portable devices such as mobile & application are sensitive to external shocks. We have developed 1.8”, 2.0” and 2.4” TFT‐panel in ODF process. Through these TFT‐panels, we have developed the PS(post spacer)design rule, process margin and method of material developments that reflect correlation with push mura, bubble and side mura. Through these rules, we suggest PS design rule, process rule and material development in order to optimize mobile & application ODF panel.
P‐199L: Late‐News Poster: Development of Large‐Sized AMOLED Manufacturing System
Authors: Kim Hae Won , Han Seok Yoon , Choi Jeong Og , Patrin John , Bresnahan Rich 
Published: August 2010

AbstractWe have developed a system for manufacturing large‐Sized AMOLED devices which can scan sources or a substrate to produce WOLED or full‐colored OLED alternatively. We also have developed a valved organic evaporation source for 4th to 5th generation substrate which enables shutoff during idling time and open process time only. So we could improve the efficiency of material utilization up to 52% with maintaining 2.5% of non‐uniformity within 1100*1300mm2 substrate. We expect this source and system can improve performance and reduce the CoO (Cost of Operation).
12.2: Enhanced Electron Emission of the Cone‐Shaped Emitters with Carbon Nanostructures
Authors: Ryu Je Hwang , Lim Han Eol , Son Byoung Taek , Lim Joon Won , Jang Soon Ju , Lee Yi Sang , Jang Jin , Park Kyu Chang 
Published: August 2010

AbstractWe developed novel cone‐shaped emitters with individual carbon nanotips using the resist‐assisted patterning process. The novel cone‐shaped nanotip emitters were arranged in an array with many nano emitters in pre‐patterned diameters of 3 μm. The cone‐shaped nanotip emitters consist of a number of carbon‐based nanostructures such as nanotubes and/or nanofibers with silicon and nitrogen elements at the periphery of each element. The cone‐shaped nano‐emitters strongly adhered to the substrate due to the large area bottom contact which is covered with diffused silicon elements. The growth mechanism and enhanced electron emission of cone‐shaped nanotip emitters was discussed.