bluuebunny/crossref_metadata_2025_split huggingface dataset:
Electroless Copper Deposition for Multilevel Metallization
Authors: Wong S.Simon , Cho James S. , Kang Ho K. , Ting C.H. 
Published: March 2011

ABSTRACTIncreases in cross-talk disturbance, signal delay and current density have a significant impact on the performance of integrated systems as the metal pitch continues to be scaled down. A metal, such as copper, which has high conductivity and high resistance to migration, will greatly alleviate these problems. A selective technique for the deposition of copper, such as electroless plating, is highly desirable because it circumvents the potential problem of dry etching copper and inherently planarizes the surface topography.
A Damage Integral Approach to Solder Joint Fatigue
Authors: Li C.-Y. , Subrahmanyan R. , McGroarty J. 
Published: March 2011

ABSTRACTThe application of a damage integral approach which provides numerical accounting of the accumulated fatigue damage in solder joint is reviewed. The instantaneous fatigue damage rate is determined by the solder stress state, temperature and environment using a phenomenological crack growth law. The stress is calculated using state variable constitutive relations for inelastic deformation. The material parameters for the crack growth law are determined from isothermal fatigue data. Representative damage integral calculations are used to illustrate the application of the approach. Finally, the significance of failure criteria on the apparent fatigue life is discussed in terms of the damage integral approach.
Infrared Characterization of RF Sputter Etching of Polyimide Thin Films
Authors: Molis S.E. , Kim D.G. , Kowalczyk S.P. , Kim J. 
Published: March 2011

ABSTRACTWe present infrared spectroscopy as a means of characterizing polyimide structural changes occurring by RF argon ion sputtering. Samples of PMDA-ODA polyimide on chromium coated substrates have been sputter etched from initial thicknesses of 400 Å down to 10 Å. Relative intensity changes in imide vibrational absorption bands have been interpreted in terms of orientational reordering which occurs during the ion sputtering process. The appearance of a new vibration at 1580 cm–1 in the spectra of samples etched below 50 Å is assigned as the Elu mode of graphite corresponding to a surface damage layer which is of a graphitic form.
Properties of a Photoimageable Thin Polyimide Film
Authors: Maw Taishih , Hopla Richard E. 
Published: March 2011

ABSTRACTMechanical properties (tensile modulus, tensile strength, elongation at break), thermal properties (T8' CTE, thermo-decomposition temperature, and rate of weight loss) and electrical properties of Problmlde 414 cured films have been determined. The mechanical properties of Probimide 414 thin films are highly dependent on the hard-bake temperature, hard-bake time, and purge gas, but not dependent on the level of the exposure energy or the presence of 1% Irganox 1010 (w/w) as a stabilizer. At a hard-bake temperature of 350ºC and a nitrogen purge rate of 15 SCFH, Probimide 414 films showed excellent retention of the mechanical properties during extended heat treatment.
Corrosion Engineering in Device Packaging
Authors: Latanision R.M. , Nagarkar P.V. , Kloppers M. , Bellucci F. 
Published: March 2011

ABSTRACTCorrosion processes affecting electronic devices are chemical and electrochemical in nature. Ionic contaminants, applied voltages, and relative humidity accelerate failure of integrated circuits. Although packaging materials often reduce the corrosion rate of the underlying circuitry, a complete understanding of the mechanism for the basic processes taking place at the coating/metallic circuitry interface is missing.In this paper the role played by water and ionic contaminants on coated metallic substrates is considered. Transport properties of free standing polyimide membranes have been examined. The corrosion behavior of polyimide/Fe and polyimide/Al systems has been investigated using electrochemical polarization, and a.c. impedance measurements. For the AI/PI system underfilm degradation has been examined using x-ray photoelectron spectroscopy (XPS). Results indicate that the flux of ions is very small compared to that of oxygen and water and yet metallic failure can be ascribed mainly to the transport of ions across the packaging material. XPS showed that considerable degradation takes place at the metal/polyimide interface prior to visible corrosion or delamination.
Investigations of (1,3-Dimethyl-3-methylsilamethylene - disilacyclobutane) as a Single Source CVD Precursor to Silicon Carbide
Authors: Larkin David J. , Interrante Leonard V. , Hudson John B. , Han Bin 
Published: March 2011

ABSTRACTThe low pressure chemical vapor deposition (LPCVD) of silicon carbide from (CH3)HSiCH2SiCH2 (CH3)CH2 SiH2 (CH 3) on Si(100) has been investigated between 700 and 1100°C at ca. 1.0 torr total pressure using a flow of argon as a carrier gas in a cold-wall LPCVD system. The gaseous byproducts were determined using quadrupole mass spectrometry (QMS) and gas chromatography - Fourier transform IR (FTIR) spectroscopy. The coating surface morphology varied from smooth to a columnar structure with increasing substrate temperature. Film composition and crystallinity were monitored as a function of deposition temperature using Auger electron spectroscopy (AES) and powder XRD.
Modelling of Gas-Phase and Surface Kinetics in Movpe of GaAs and AlxGal-xAs
Authors: Mountziaris T.J. , Ingle N.K. , Kalyanasundaram S. 
Published: March 2011

ABSTRACTWe present detailed chemical reaction mechanisms that describe the deposition of GaAs films from tertiary-butyl-arsine (TBA) and trimethyl-gallium (TMG) as well as the deposition of AlxGa1-xAs (0≤x≤1) films from trimethyl-aluminum (TMAl), TMG and arsine during metalorganic vapor phase epitaxy (MOVPE). The kinetic models include both gas-phase and surface reactions, whose rates are used to predict production or consumption of the participating species as well as the growth rate of the film. Two-dimensional simulations of flow, heat and mass transfer in horizontal MOVPE reactors have been coupled with the kinetic models to provide a realistic picture of the process. The predicted growth rates at different operating conditions as well as the predicted incorporation ratio, x, of Al in the AlxGal-xAs films are in good agreement with experimental observations.
Bromine-Methanol Etching of Cadmium Telluride in a Rotating Disk Reactor
Authors: Gentzler Michael B. , Ko Edmond I. , Sides Paul J. , Bowman Paul T. 
Published: March 2011

ABSTRACTThe kinetics of the bromine-methanol etching of CdTe were studied in a rotating disk reactor as a function of temperature, bromine concentration, substrate orientation, and rotation rate. The results indicated that the etching process is mass transfer controlled from -20°C to 40°C and to a maximum rotation rate of 1200 RPM. A one-dimensional transport model was used to obtain effective diffusion coefficients for bromine in methanol. The diffusion coefficient of the etchant in methanol is given by 3.7×10-8 (T/η) cm2/s over the range of 2.5°C to 23°C.
Properties of Doped a-Si:H Films Deposited by Ecr Plasma CVD
Authors: Murai H. , Hayama M. , Kobayashi K. , Yamazaki T. 
Published: March 2011

ABSTRACTPhosphorous doped hydrogenated amorphous silicon films were deposited by microwave electron cyclotron resonance (ECR) plasma CVD at a substrate temperature of 100°C. Electrical, optical and hydrogen-incorporation properties of the films have been investigated. By optimizing the deposition condition, the dark conductivity of 3×10−4S/cm is realized without subsequent annealing. Relations between the film properties and ECR plasma properties have been studied by means of optical emission spectroscopy (OES) and quadrupole mass spectroscopy (QMS).
Hydrogen--Halogen Exchange Reactions on Silicon (100)
Authors: Thomas R.E. , Rudder R.A. , Markunas R.J. 
Published: March 2011

ABSTRACTUsing thermal mass desorption and LEED we have studied interactions of H, C12, and F2 with a silicon (100) surface, and exchange reactions of the gases with adsorbates on the silicon (100) surface. Thermal desorption spectra were measured for surfaces dosed with H, C12, and F2 singly and then for surfaces dosed first with a halogen and then atomic hydrogen. Finally, the reverse sequence was studied, with atomic hydrogen dosing and then the halogen exposure. Results indicate that the molecular halogens C12 and F2 are not effective at removing H from a Si (100) surface. However, for the reverse reaction, atomic hydrogen appears quite effective at removing the halogens.
Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100)
Authors: Schneider T. P. , Cho J. , Weide J. Vander , Wells S.E. , Lucovsky G. , Nemanich R.J. , Mantini M.J. , Rudder R.A. , Markunas R.J. 
Published: March 2011

ABSTRACTThis study details low pressure and low temperature cleaning of Si(100) surfaces. The properties of Si surfaces exposed to variations in plasma generated H are described. The diagnostic techniques used to study the processing conditions are residual gas analysis (RGA) and emission spectroscopy. The surface is characterized by low energy electron diffraction (LEED) and angle resolved uv-photoemission spectroscopy (ARUPS). During the cleaning, Si complexes are formed which indicates the removal of species from the Si(100) surface. Plasma cleaning at 300°C results in a Si(100) surface with 2×1 surface diffraction patterns as detected by LEED. Measurements by ARUPS with He I radiation show the absence of Si surface states on the Hpassivated surface. The ARUPS measurements also indicate that the H begins to desorb from the Si(100) H-passivated surface at ∼500°C.
Surface Chemistry of CVD Reactions Studied by Molecular Beam/Surface Scattering
Authors: Yu Ming L. , Memmert Ulrich , Buchan Nicholas I. , Kuech Thomas F. 
Published: March 2011

ABSTRACTA molecular beam/surface scattering experiment in an ultrahigh vacuum is conceptually a simulation of a CVD reactor without the interference from gas phase and wall reactions. The surface chemistry can be studied in real-time during the deposition reaction at the desired temperature. In our experiment, we used pulsed molecular beams of the reactants and a mass spectrometer to monitor In real-time the reaction products evolving from the substrate surface. With this arrangement, the reaction probability of the molecules can readily be determined by measuring the unreacted fraction of the molecular beam. The reaction pathways can be deduced from the Identification of the reaction products, while their time-evolutions give the kinetic parameters. We shall illustrate this technique by our study on the reactions of trimethylgallium and triethylgallium on GaAs as related to the metalorganic CVD and atomic layer epitaxy of GaAs.
Decomposition Of Trimethylgallium Multilayers On Si(100)
Authors: Lin R. , Gow T. R. , Masel R. I. 
Published: March 2011

ABSTRACTIn previous work, we found that the decomposition of trimethylgallium (TMGa) on a clean silicon substrate was dominated by interactions with the silicon substrate. In this paper, TPD, XPS, and molecular beam techniques were used to explore how the surface chemistry changes as gallium, trimethylgallium, and hydrocarbon overlayers are deposited onto the substrate. At low coverages, gallium and carbon have little effect on the TPD spectrum. However, at coverages in the order of a monolayer, the chemistry changes substantially. While on clean silicon the metal containing species are all strongly bound, on covered surfaces there are TPD peaks at 580 K and 700 K corresponding to di- and mono- methyl gallium. Dimethylgallium desorption is also observed in the beam system. There is also evidence for desorption of methyl radicals from the covered surfaces, while only methane desorption is seen with clean silicon. These results show that changes in the substrate composition can have a substantial, influence on TMGa decomposition. Hence some care must be taken when extrapolating data from UHV studies to actual growth conditions.
Organometallic Chemical Vapor Deposition of Copper from a New Organometallic Precursor
Authors: Fine Stephen M. , Dyer Paul N. , Norman John A. T. , Muratore Beth A. , Iampietro Robert L. 
Published: March 2011

ABSTRACTThin copper films have been grown on a variety of substrates using Cu(nona-F)2, (bis[4-(2,2,2-trifluoroethyl)imino-1,1,1,5,5,5-hexafluoro-2-pentanonato] copper(II)), a new volatile organometallic copper precursor, and the results are compared with those obtained using copper(II) betadiketonates. Copper films were grown in a cold wall reactor at reduced pressure at temperatures between 270°C and 350°C. For Cu(nona-F)2, films which are pure as determined by Auger electron spectroscopy and have a resistivity of 2.1 micro-ohm cm were deposited at temperatures above 270°C, 40°C lower than was possible using Cu(hfac)2. At low deposition temperatures, Cu(nona-F)2 shows some selectivity towards silicon oxide surfaces in preference to metals. The effects of CVD process parameters on the deposition rate and microstructure of the films were studied with a designed experiment and were statistically modeled. Deposition rates up to 70 nm/min were measured. The standard enthalpy of vaporization of Cu(nona-F)2 was found to be 9.6 kcal/mol.
Synthesis of New Copper(I) β-Diketonate Compounds for CVD of Copper
Authors: Shin H.K. , Chi K.-M. , Hampden-Smith M.J. , Kodas T.T. , Farr J.D. , Paffeif M.F. 
Published: March 2011

ABSTRACTA series of (0β-diketonate) copper(l) trimethylphosphine compounds has been prepared. These species exist either as liquids or low-melting solids at room temperature. The utility of these compounds as precursors for Chemical Vapor Deposition (CVD) of copper has been examined under a variety of conditions. High purity films with low resistivities have been deposited under a variety of conditions. Selective copper deposition was observed as a function of the substrate, precursor and substrate temperature. Evidence consistent with thermallyinduced disproportionation of the title compounds to form copper metal and copper(II) (β-diketonate)2 during deposition was observed.
Self-Induced Repair: a New Concept in Chemical Microprocessing
Authors: Chen C. Julian 
Published: March 2011

ABSTRACTSelf-induced repair (SIR) is a new concept in chemical microfabrication of microelectronic interconnections. It is based on local chemical processes (deposition or etching) induced by certain local electrical phenomena at defect sites (Joule heat, concentration of electrical field or current density, etc.). It has been demonstrated on four types of defects: near-opens, small opens, near-shorts, and thin shorts. The example of the SIR of near opens, or constrictions in interconnections, is discussed in detail.
Synchrotron Photoemission Studies of the Structure of Thermally Grown Si3N4 ON Si(100)
Authors: Peden C. H. F. , Rogers J. W. , Kidd K. B. , Tsang K. L. , Shinn N. D. 
Published: March 2011

ABSTRACTSynchrotron photoemission measurements of the Si(2p) and N(ls) levels have been made on Si3N4 thin films grown in-situ by high temperature reaction of Si(100) with NH3. The tunability of the excitation photons allowed the mean-free-path of the emitted photoelectrons to be varied, thereby providing the capability to determine not only the types of chemical species present, but their location within the film as well. The structure of these films consists of an outer monolayer (ML) of Si atoms on top of stoichiometric Si3N4. In addition, there are a smaller number (1/2 ML) of Si atoms with intermediate oxidation states at the Si3N4/Si interface.
In-Situ Ftir and Mass Spectrometric Studies of Gallium Arsenide Metalorganic Chemical Vapor Deposition: Trimethyl Gallium and Tertiary-Butyl Arsine on GaAs(100)
Authors: Annapragada Ananth V. , Jensen Klavs F. 
Published: March 2011

ABSTRACTLow pressure (∼10−5 Torr) studies of the adsorption and decomposition of tertiarybutyl arsine (t-BAs) on three different GaAs(100) surfaces (Ga-rich, H-atom treated and high temperature t-BAs treated) are presented. Mass spectrometric studies indicate that the primary gas-phase products of t-BAs decomposition on GaAs(100) are the tertiary-butyl radical and incomplete arsenic hydrides (predominantly AsH2). Infrared spectroscopic studies show that on H-atom treated and high-temperature t-BAs treated surfaces, t-BAs decomposes leaving behind very small quantities of alkyl groups. On Ga-rich surfaces however, significant amounts of alkyl products are observed. The surface species resulting from the adsorption of trimethyl gallium (TMG) are shown to be different at room temperature and high temperature.
Characterization of Spin on Glass Using Thermo Analytical Techniques and Ftir Spectroscopy
Authors: Speciale M. , Rosa C. La , Grasso D. , Porto A. , Lanza P. , Magro C. 
Published: March 2011

ABSTRACTThe curing of a commercial ethoxymethyl-phosphosiloxane at different temperatures and under various gas ambients was characterised using NMR, thermoanalytical techniques, and FTIR spectroscopy. DSC (Differential Scanning Calorimetry) and DTG (Differential Thermo Gravimetry) were employed to characterize the reactions that occur during thermal treatments in O2 or N2 atmospheres. FTIR spectroscopy and CP (Cross Polarization) 133C - NMR were used to detect the presence of the hydroxyl and organic groups in the cured samples. The experimental results identified three different temperatures (400,580,700°C) that define important stages of the curing reaction. In particular, for annealing at temperatuires up to 580°C in 02, DSC, DTG and FTIR spectra showed the elimination of the organic groups. However, when the annealing was carried out in N2 up to 700°C, these groups are retained.
Synthesis and Characterization of PbTiO3 Thin Films Grown by Chemical Beam Deposition
Authors: Hsieh K.Y. , Rou S.H. , King L.L.H. , Kingon A.I. 
Published: March 2011

ABSTRACTA new deposition technique for PbTiO3 films utilizing chemical beams of metalorganic sources in an ultrahigh vacuum chamber is demonstrated. Ozone is introduced to provide a source of active oxygen. The role of active oxygen in controlling the surface chemical reactions is discussed. Fine grained, single phase PbTiO3 films have been deposited on MgO (100) and SiO2/Si substrates at substrate temperatures as low as 350°C. Films were characterized by XRD, SEM, and TEM. The results suggest that the chemical beam deposition technique provides another method for the fabrication and integration of ferroelectric thin films with silicon (or GaAs) devices.
Preceramic Polymers for Aluminum Oxides
Authors: Rees William S. , Hesse Werner 
Published: March 2011

ABSTRACTThe utilization of recently discovered aluminum-oxygen-carbon backbone polymers in the preparation of various phases of A12O3 is presented. The structure of the polymers has been examined by ss 27AI NMR, TGA, MS, SEM, XRD, and EDAX. The solid pyrolysis products of these polymers have been characterized by ss 27AI NMR, XRD, SEM, and EDAX. The volatile products of pyrolysis have been studied by trapping, TGA and MS.
Aes and Xps Studies of Sulfur-Treated ALxGA1−xas Surfaces
Authors: Ohno Hirotaka , Kawanishi Hidenori , Akagi Yoshiro , Koba Masayoshi , Hijikata Toshiki 
Published: March 2011

ABSTRACTPassivation of AlxGa1−xAs surfaces by ammonium sulfide treatment has been investigated. Enhancement of photoluminescence intensity and dramatic reduction of oxide peaks in spectra acquired by X-ray photoelectron spectroscopy on AlxGa1−x.As surfaces prepared by this treatment lead to the reduction of surface state density. It was found that sulfur atoms were mainly bonded to Al atoms in an Al-enriched specimen of AlxGa1−xAs(x=0.78). The surface compositions of Al-enriched specimen(x=0.43, 0.78) were also found to be As-rich as a result of both sulfur treatment and the preferential etching of metallic atoms by an acidic solution, which prevents the initial oxidation of the surface of A1xGa1−xAs.
Atmospheric Pressure Chemical Vapor Deposition of Gallium Nitride Thin Films
Authors: Gordon Roy G. , Hoffman David M. , Riaz Umar 
Published: March 2011

ABSTRACTThe atmospheric-pressure chemical vapor deposition of gallium nitride films from hexakis(dimethylamido)digallium, Ga2(NMe2)6, and ammonia precursors at 200 °C with growth rates up to 1000 Å/min is described. The films were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. Rutherford backscattering analysis showed that the N/Ga ratio was 1.12–1.17. The films were crystalline with ≃ 5–15 nm crystallites.
On the Formation of Martensite in In0.77TL0.23.
Authors: Wuttig M. , Zhou X. , Nahm S. , Li J. 
Published: March 2011

AbstractIt has been proposed that martensite is formed by heterogeneous nucleation and growth or evolves from a precursor. In order to examine these theories, high resolution X-ray diffraction experiments have been performed on In0.77Tl0.23. It is known that the transformation of the alloy is close to second order and tweed has been observed which could be a possible precursor structure. Our experimental results do show precursors but of a different nature: satellites around the 220 Bragg peak have been detected up to 15 degrees above the transformation temperature. They develop reversibly at the angular positions of the product phase. The results are not compatible with the “crest-riding-peridon” model but rather show an equilibrium two phase mixture above the transformation temperature in which the second phase is structurally equal to the product phase. We have also investigated the mechanical response of the high temperature phase and found that both shear ‘elastic constants’ soften. This result can be understood in terms of twin boundary or stacking fault motion.
Solid State Amorphization of a Ni-B Alloy by Mechanical Alloying
Authors: Nasu T. , Koch C.C. , Nagaoka K. , Sakurai M. , Suzuki K. 
Published: March 2011

AbstractThe main purpose of this work was to investigate the possibility of solid state amorphization of Ni-B crystal powder. A Ni-B alloy powder was obtained by mechanical alloying of Ni and B powder using a conventional ball milling machine. X-ray diffraction and EXAFS measurements were made for the mechanically alloyed samples as a function of milling time. An amorphization reaction was observed in Ni64B36 at 400 h of milling time. The long range order of the crystalline Ni phase diminished with an increase of solution of B into the Ni matrix. This suggests that the solution of B atoms into the Ni crystalline phase, forced by mechanical alloying, plays an important role in the crystalamorphous transformation.
Solid-State Reactions in Multilayer Ni/Ti Thin Film Composites
Authors: Winters Gillian E. , Unruh K.M. , Swann C.P. , Patt M.E. , White B.E. , Cotts E.J. 
Published: March 2011

AbstractMultilayer films, consisting of alternating layers of crystalline Ni and Ti, have been prepared by RF sputter deposition over a range of modulation wavelengths corresponding to an overall composition of Ni50Ti50. These films have been characterized by xray diffraction and Rutherford backscattering measurements. The solid-state transformation by interdiffusional mixing of the individual layers has been directly studied by differential scanning calorimetry and correlated with structural measurements. These measurements indicate that the solid-state reaction of Ni and Ti multilayers proceeds through the formation of a metastable solid solution of Ti in Ni followed by the formation of intermetallic equilibrium compounds. No direct calorimetric or structural evidence for the formation of an amorphous Ni-Ti phase has been found in these samples.