bluuebunny/crossref_metadata_2025_split huggingface dataset:
Fabrication of Dual-Damascene Structures in Low Dielectric Constant Polymers for Multilevel Interconnects
Authors: Tacito R. , Steinbrüchel C. 
Published: April 2011

AbstractParylene-n (pa-n) and benzocyclobutene (BCB) are novel candidate materials for interlevel dielectrics in future multilevel interconnects, due to their dielectric constant being much lower than that of silicon dioxide. We describe the fine line patterning of these materials by reactive ion etching in O2/CF4 plasmas. Examples of high aspect ratio trenches and dual damascene structures are presented involving processes with single and double hardmasks.
Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography
Authors: Yew J. Y. , Chen L. J. , Nakamura K. 
Published: April 2011

AbstractEpitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 4m in size oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy and thin film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3. μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings.
Effect of Ni-Si Disordered Layer on the Electronic Properties of Ni Silicide Barrier Contacts on Silicon
Authors: Rastogi A. C. , John P. K. 
Published: April 2011

AbstractChanges in current transport and barrier heights of Ni-Si contacts as it undergoes atomic rearrangement and redistribution of charges under transient light annealing is studied with time resolution of 0.6 msec. Formation of an intermixed Ni-Si disordered layer by Ni-diffusion is shown by Auger data. Intrinsic barrier height of 0.7 eV increases to 0.82 eV as the spatial extent, disorder and density of Ni atoms which introduce new localized ststes at Ev+0.7 eV increases. Electronic properties of silicide contacts are affected by local interfacial bonds than by the characteristic of later grown silicide.
Sims and Moke Studies of Fe/Gd Multilayers on Si
Authors: Hsu Li-Shing , Lo C.-K. , Yao Y.-D. , Yang C.-S. 
Published: April 2011

AbstractTwo Fe/Gd/Fe/Gd multilayers with different layer thicknesses were grown on Si (100) by magnetron sputtering. The as-deposited samples were vacuum-annealed at 100°C, 200°C, and 300°C. They were studied by grazing incidence x-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS), vibrating sample magnetometer (VSM) and magneto-optical Kerr effect (MOKE). The deposition rates for Fe and for Gd are (1-2) and 4 Å s−1, respectively. The XRD and SIMS data show that interdiffusion occurs between Fe and Gd layers, and between Gd and Si layers. The thicker multilayers show strong in-plane uniaxial anisotropy.
Magnetic Properties of Uniform Nanowire arrays
Authors: Nguyen P. P. , Tonucci R. J. 
Published: April 2011

AbstractFabrication and magnetic measurements of ferromagnetic (Ni and Co) nanowire arrays using nanochannel glass templates are presented. These nanowire arrays have novel characteristics: The nanowires are very parallel (to within a fraction of a degree) and regularly placed. They are circular with extremely uniform diameter (of less than 80 nm for some samples) both along individual wire's length and among different wires within an array. Magnetic measurements show enhanced coercivities compared to the bulk values. The saturation magnetization for Ni nanowires depends much more strongly on temperature than that for Co nanowires. The coercivities are also dependent strongly on temperature and can be explained by a thermal-activation model.
Tailoring the Pore Size of Hypercrosslinked Polymer Foams
Authors: Steckle W. P. , Mitchell M. A. , Apen P. G. 
Published: April 2011

AbstractOrganic analogues to inorganic zeolites would be a significant step forward in engineered porous materials and would provide advantages in range, selectivity, tailorability and processing. Rigid molecular foams or “organic zeolites” would not be crystalline materials and could be tailored over a broader range of pore sizes and volumes. A novel process for preparing hypercrosslinked polymeric foams has been developed via a Friedel-Crafts polycondensation reaction. A series of rigid hypercrosslinked foams have been prepared using simple rigid polyaromatic hydrocarbons including benzene, biphenyl, m-terphenyl, diphenylmethane, and polystyrene, with p-dichloroxylene (DCX) or divinylbenzene (DVB) as the crosslinking agent. Transparent gels are formed suggesting a very small pore size. After drying the foams are robust and rigid. Densities of the resulting foams can range from 0.15g/cc to 0.75g/cc. Nitrogen adsorption studies have shown that by judiciously selecting monomers and crosslinking agent along with the level of crosslinking and the cure time of the resulting gel, the pore size, pore size distribution, and the total surface area of the foam can be tailored. Surface areas range from 160 to 1,200 m2/g with pore sizes ranging from 6Å to 2,000Å. Further evidence of the uniformity of the foams and their pore sizes has been confirmed by high resolution TEM.
The Synthesis and Characterisation of Ordered Mesoporous Materials Incorporating Organo-Siloxanes
Authors: Sims Stephen D. , Burkett Sandra L. , Mann Stephen 
Published: April 2011

AbstractOrganically-functionalized mesoporous silicas have been prepared at room temperature, in a base-catalysed reaction, by the co-condensation of tetraethoxysilane and organosiloxanes ((C2H5O)3Si-R; R = C6H5 or n-C8H17) in the presence of surfactant (C16H33N(CH3)3Br) templates. The resulting materials are covalently linked, hexagonally ordered, hybrid inorganicorganic networks.
Mixed Carbon-Aluminum Oxide Coatings from Aqueous Sols and Solutions
Authors: Boakye E. , Hay R.S. , Petry M. D. 
Published: April 2011

Abstract3M Nextel 720 fiber tows were continuously coated with carbon-alumina mixtures. Water soluble hydrocarbons such as sucrose and ammonium polymethacrylate (Darvan C) were used as carbon sources. Bridging of coating between filaments was reduced by displacing excess sol in the fiber tow with 1 -octanol. The effect of carbon-alumina association (sucrose or polyelectrolyte and alumina interaction) on the homogeneity of the alumina/oxide coatings are presented and discussed.
C-Axis Oriented Thin Films of PbZrO3 on Silicon Substrate by Pulsed Laser Ablation
Authors: Chattopadhyay S. , Palkar V. R. , Ayyub P. , Purandare S. C. , Pam S. P. , Apte P. R. , Pinto R. , Multani M. S. 
Published: April 2011

AbstractWe report the successful deposition of single phase c-axis oriented films of lead zirconate (PbZrO3) on a silicon substrate by pulsed laser ablation. The formation of the film at different substrate temperatures was studied using atomic force microscopy and scanning electron microscopy. We also measured the temperature dependence of the dielectric constant of the films and their dielectric hysteresis behavior.
Low Temperature Growth of PZT(52/48) Thin Films using Rf Magnetron Sputtering Method
Authors: Kim Tae Song , Kim Dong Joo , Lee Jeon Kook , Jung Hyung Jin 
Published: April 2011

AbstractComparatively low temperature growth of Pb(Zr0.52Ti0.48)O3 thin films was accomplished by using rf magnetron sputtering process. Well crystallized PZT thin films (4000Å thickness) were synthesized on Pt/Ti/SiO2/Si(100) substrate at the temperature as low as 5200°C. The polycrystalline PZT perovskite phase formation was confirmed with XRD analysis. Remanent polarization(Pr) and coercive field(Ec) of as-grown film (4000Å) were 8–30 μC/cm2 and 24–64 kV/cm with the applied voltage variation(5–17 V). The post annealing enhances the electrical properties even at 500°C, which is below the as-grown temperature(520°C). The increase of annealing temperature resulted in the consequent increase of remanent polarization and the decrease of coercive field. The values of dielectric constant(ε′ ) and tan δ measured with small signal sign wave(1V, 10kHz) were 1207 and 0.066 in case of as-grown film (4000Å).
Pyroelectric Properties of the Plt(10) Thin Film on the P-Doped Poly Silicon
Authors: Kang Seong Jun , Yoon Yung Sup , Kim Dong Il 
Published: April 2011

AbstractWe have studied the pyroelectric properties of the PLT(10) thin film deposited on a p-doped poly-Si electrode by using the sol-gel method. Measurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reaches a maximum at 295°C, which can be thought of as the Curie temperature. The PLT(10) thin film on p-doped poly-Si fabricated in this research shows excellent pyroelectric properties. The pyroelectric coefficient and the fiqures of merit, Fv and FD at room temperature are measured as 5.76 × 10−8 C/cm2 °C, 1.17 × 10−10C-cm/J and 0.93 × 10−8C-cm/J, respectively.
Characterization of SrxBa1−xTiO3 Pulsed Laser Deposition Thin Films
Authors: Pérez W , Sen Sampriti , Cordero J. , Ching-Prado E. , Katiyar R.S. , Horwitz J.S. , Knauss L.A. 
Published: April 2011

AbstractThin films of SrTiO3 (STO) and SrxBa1−xTiO3 (SBT) with x = 0.35, 0.5, 0.9, and prepared by excimer laser deposition on LaAlO3 and MgO were studied. SEM analysis indicates that the surfaces of these films are smooth with isolated pores, except the SBT(x=0.5)/LaAlO3 sample, where a high concentration of large pores was found. X-ray diffraction (XRD) results show well oriented films. External FT-IR reflection studies reveals a band around 500 cm−x, which shows a significant frequency shift with increasing component concentration. Also, this IR-reflectivity band presents no changes between the SBT(x=0.9)/LaALO3 sample annealed at 750°C and the same film annealed at 850°C. On other hand, the STO/LaAlO3 and STO/MgO films show differences in frequency position of this reflectivity band. Raman spectra of the SBT sample with x ≥ 0.35 show broad bands associated with the BaTiO3 (BTO) material. However, all the phonons bands are broader than those in BTO, in particular the band around 309 cm−. Raman results suggest that the spectrum is a consequence of a breakdown in the translational symmetry due to defects. Raman scattering also indicates a similarity between SBT(x=0.9) at 750°C and that at 850°C. Micro-Raman and EDX analysis show that STO/MgO and SBT(x=0.35)/LaAlO3 films are close to the expected stoichiometry, while STO/LaAlO3 and SBT(x=0.9) films present deficiencies of titanium and oxygen.
Mechanical Properties of Metal-Intermetallic Microlaminate Composites
Authors: Heathcote J. , Odette G. R. , Lucas G. E. , Rowe R. G. 
Published: April 2011

AbstractTensile strengths, static and dynamic fracture toughness, and fatigue crack propagation were measured for different combinations of Nb metal-intermetallic microlaminate composites. Metal layer bridging produced toughening by factors of 2 to 5 under static conditions. Dynamic testing reduced the toughness significantly. Fatigue crack propagation rates were comparable to data for pure Nb. A key composite property, the stress -displacement function σ(u) of the constrained metal layers, was evaluated by several techniques and used in a bridging-crack stability analysis to predict tensile strengths in agreement with experimental values. The results provide guidelines for improving microlaminate performance.
The Fracture Behavior of SiCp/Aluminum Alloy Composites With And Without Large Al-Particles
Authors: Pandey A. B. , Majumdar B. S. , Miracle D. B. 
Published: April 2011

AbstractJIc measurements were performed on a SiCp/Al-7093 MMC with controlled heat treatments, and the damage mechanisms were evaluated to understand the influence of microstructural parameters on the fracture toughness and crack resistance behavior. The deformed materials showed widely different damage and flow localization for different matrix microstructures. In an effort to improve fracture toughness, large Al particles were incorporated into the powder-metallurgy based MMC, and extruded to obtain pancake shaped Al phases. In the extruded condition, the effect of Al particles on the crack initiation toughness was negligible. However, significant improvement in the toughness was observed when the extruded material was further rolled. These issues are discussed in the context of observed deformation and damage mechanisms.
The Structural Investigation of Alumina and Aluminum Nitride Mixed Thin Films Prepared by D.C. Plasma Processes Under Different Conditions
Authors: Wang Paul W. , Sui Shixian 
Published: April 2011

AbstractComposite films of aluminum nitride and alumina were fabricated on 6061 aluminum alloys in a d.c. plasma chamber. Samples were treated by three main processes. They were 1) Ar plasma etching, 2) NH3/Ar plasma with low pressure and low current density, and 3) NH3 plasma with high pressure and high current density. The oxygen-free Al surface was obtained after 10 min. 2.8 keV Ar+ sputtering in a UHV analysis chamber after the sample was treated by processes 1 and 2. Composite films of aluminum nitride and alumina were obtained on samples treated by processes 1, 2, and 3. The surface compositions and bonding environments of the composite films were characterized by AES and XPS. Composite films containing Al-N, Al-O and Al-Al bonds were formed but no nitrogen-oxygen bonds were observed. The thicknesses of the films were estimated by argon sputtering in the UHV chamber. The surface morphologies of samples after fabrication processes in d.c. plasma were investigated by SEM. A possible formation mechanism of the composite film in the ammonia plasma is proposed.
Nanoindentation Studies of Yield Point Phenomena on Gold Single Crystals
Authors: Corcoran S. G. , Colton R. J. , Lilleodden E. T. , Gerberich W. W. 
Published: April 2011

AbstractNanoindentation studies often show an instantaneous displacement-excursion in the loaddisplacement curve. This anomaly is generally associated with a surface contamination effect, dislocation emission, a phase transition, or an oxide break-through event. The determination of which effect is operative is often difficult when investigating oxide covered surfaces. We have performed a detailed nanoindentation study on clean, flame annealed single-crystal Au thus eliminating the effects of a surface oxide or contamination layer. Multiple displacement excursions were observed exhibiting a new phenomenon of “staircase” yielding. Owing to the fact that our radius of contact is more than an order of magnitude smaller than the average dislocation spacing expected for well annealed Au, the excursions are explained in terms of multiple dislocation nucleation events on parallel slip bands. Indentation data were taken on Au (111), (110), and (100) single crystal surfaces.
Mechanical Properties of Pure Carbon and Carbonnitrogen Coatings on Thin Film Head Sliders
Authors: Wang G. , Strojny A. , Sivertsen J. M. , Judy J. H. , Gerberich W. W. 
Published: April 2011

AbstractThe mechanical properties of pure carbon (C) and carbon-nitrogen (C:N) coatings on thin film head sliders were investigated by continuous drag testing (CDT) and nano-indentation. Comparisons were made in terms of wear protection, elastic modulus and hardness of these two types of carbon films. The C and C:N thin films with various thickness were deposited on thin film head sliders using a facing target sputtering (FTS) system. After 23,000 revolutions of CDT tests, all the testing head sliders which were uncoated and coated with 90 Å C or C:N exhibited some degree of wear damage as indicated in AFM micrographs where that of the uncoated head was the most severe and that of the C:N coated head was the least. Head sliders coated with 1000Å C and C:N were studied under the TriboscopeTM nano-indenter, where load-displacement curves at different maximum loads were recorded. Elastic modulus and hardness were determined from those curves. The results show that elastic modulus and hardness of C:N are greater than that of C. Therefore, one may conclude that both C and C:N behave like a protective coating for the head slider where C:N is better than C, which could be well related to the larger elastic modulus and hardness of C:N.
Film Thickness Effect on Tensile Properties and Microstructures of Submicron Aluminum Thin Films on Polyimide
Authors: Kang Y. S. , Ho P. S. , Knipe R. , Tregilgas J. 
Published: April 2011

AbstractThe mechanical behavior of the metal film on a polymer substrate becomes an important issue in microelectronics metallization. The metal/polymer structure is also useful to investigate the deformation behavior of very thin free-standing metal film since the flexible polymer serves as a deformable substrate. The tensile force-elongation curves have been measured using a microtensile tester for aluminum thin films, deposited on a PMDA-ODA polyimide film, in the thickness range from 60 rum to 480 nm. The stress-strain curves for aluminum films were constructed by subtracting these curves with polyimide curves measured separately. Tensile strength increases linearly with decreasing film thickness from 196 MPa to 408 MPa within the film thickness range studied. This is in good agreement with the published data for free-standing aluminum films in the same thickness range. The measured Young's modulus is lower than the bulk modulus and exhibits no systematic dependence on the film thickness. The microstructures of aluminum films have been examined using a transmission electron microscope (TEM). These films posses the (111)-textured columnar grain structures. Grain sizes exhibit log-normal distributions and the mean grain size increases monotonically with the film thickness. An attempt is made to evaluate the effect of film thickness and grain size on the strength of aluminum thin film and the result is discussed.
Measurements of Stress Evolution During Thin Film Deposition
Authors: Chason E. , Floro J. A. 
Published: April 2011

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.
Dependence of Hardness and Stiffness on Density of Ta2O5 and TiO2 Layers
Authors: Baker S. P. , Ottermann C. R. , Laube M. , Rauch F. , Bange K. 
Published: April 2011

AbstractHighly refractive amorphous TiO2 and Ta2O5 films with thicknesses between 270 and 514 nm were deposited on fused silica glass substrates by reactive evaporation and reactive ion plating. Density, hardness, and stiffness were investigated as a function of deposition process. The films were examined using Rutherford backscattering spectroscopy and were found to have densities between 72 and 100% of those of the corresponding bulk oxides. Nanoindentation studies indicated a strong correlation between density and both hardness and elastic stiffness of the oxide film materials. Hardness and modulus both varied by more than 40% over this density range.
Studies of Interface Demarcation and Structural Defects in Ga Doped Ge Single Crystals Using Synchrotron White Beam X-Ray Topography
Authors: Chung H. , Raghothamachar B. , Zhou W. , Dudley M. , Gillies D. C. 
Published: April 2011

AbstractSynchrotron White Beam X-ray Topography (SWBXT) has been applied to the characterization of marked growth interfaces in Ga doped Ge single crystals. The techniques employed in interface demarcation include modifications of the cold zone temperature, mechanical pulsing and Peltier pulsing. As revealed by our observations, the visibility of growth interfaces is a sensitive function of diffraction conditions. A combination of the correct orientation of the active reciprocal lattice vector with respect to the interface plane and the necessary strain sensitivity controlled by the rocking curve width of the reflection are proved to be important for interface visibility. This can easily be achieved by using synchrotron radiation since the tunability of the synchrotron source provides great flexibility in the choice of proper diffraction conditions. Structural defects such as small-angle tilt boundaries and dislocation cell structures were also observed. The formation mechanism of these defects will be discussed. Direct evidence of dislocations present in the seed crystal propagating into the as-grown crystal through the melt-back interface during crystal growth was also obtained.
X-Ray Spectroscopic Study of the PdxC60Chemical Bonding
Authors: Okotrub A.V. , Fomin E.S. , Ivanova V.N. , Mazalov L.N. 
Published: April 2011

AbstractThe CKα -emission spectra of the PdxC60 compounds were obtained. To interpret the spectrum and study the Pd - C60 chemical bond structure, the SCF Xα-SW calculations of the clusters simulating the bonding between two fullerene molecules and a Pd bridge atom were carried out. On the base of the obtained data, a diagram of the electron interaction between the Pd atoms and fullerenes was constructed.
Magnetic Circular Dichroism And X-Ray Absorption Near Edge Structure Studies Of Magnetoresistive Oxides
Authors: Mini S. M. , Mitchell John , Hinks D. G. , Kimball C. W. , Montano P. A. , Lee P. , Rosenmann D. , Tkachuk A. V. , Udani A. 
Published: April 2011

AbstractWe report the results of temperature dependent, Mn K-edge X-ray Absorption measurements: Magnetic X-ray Circular Dichroism (MXCD) for local magnetic properties and X-ray Absorption Near Edge (XANES) for electronic and structural properties of Mn-based oxide magnetoresistive compounds La1−xSrxMnO3. This is the first report of an MXCD signal of the Mn K-edge in Mn oxide systems. By studying the integrated peak intensity of the first peak in the MXCD signal, it can be determined that the magnetic properties of the system are independent of temperature in the range 94 to 223K.
Effects of Addition of Heavy Rare-Earth Elements on the Structures and Resistivities of Al Thin Films for TFT - LCD Interconnects
Authors: Takayama Shinji , Tsutsui Naganori , Zhudan Zheng 
Published: April 2011

AbstractThe addition of Ho or Er to Al thin films markedly suppresses the grain growth at high temperature (350 °C – 450 °C). However, different from the effect of adding elements of Y, La, Pr, Nd, Sm, Gd, and Dy, thermal defects of hillocks or whiskers start to appear on the film surface after annealing at 300 °C ( though depending on the content of added elements). It has been revealed that small amounts of metallic compounds of Al3RE (RE = Ho and Er) have been segregated in a supersaturated solid solution of the Al phase after annealing at 300 °C, and that a large amount of added impurities still remained in the Al matrix. The resistivity of Al1−xREx alloy thin films (RE = Ho or Er, x = 2 – 7 atomic %) was 5 – 7 μΩcm after annealing at 450 °C.
A Molecular Dynamics Simulation on Thin Film Formation Process of Surfactant-Mediated Growth
Authors: Sasajima Y. , Iijima A. , Ozawa S. , Hiki Y. 
Published: April 2011

AbstractThe phenomenon of surfactant-mediated growth has been successfully simulated by means of a molecular dynamics method using two-dimensional model atoms interacting via a Lennard-Jones potential. Surfactant atoms were placed on a substrate, and then film atoms were deposited. Under adequate experimental conditions, the surfactant atoms could stay at the growing surface by exchanging their positions with the deposited atoms. Effects of various conditions on the morphology of the film surface were precisely investigated by the simulations.