bluuebunny/crossref_metadata_2025_split huggingface dataset:
Up‐regulation of L1CAM is linked to loss of hormone receptors and E‐cadherin in aggressive subtypes of endometrial carcinomas
Authors: Huszar Monica , Pfeifer Marco , Schirmer Uwe , Kiefel Helena , Konecny Gottfried E , Ben‐Arie Alon , Edler Lutz , Münch Maria , Müller‐Holzner Elisabeth , Jerabek‐Klestil Susanne , Abdel‐Azim Samira , Marth Christian , Zeimet Alain G , Altevogt Peter , Fogel Mina 
Published: December 2009

AbstractEndometrial carcinomas (ECs) are classified into type 1 (less aggressive) and type 2 (aggressive) tumours that differ in genetic alterations. So far, reliable immunohistochemical markers that can identify patients with high risk for recurrence are rare. We have defined the expression of L1 cell adhesion molecule (L1CAM), a biomarker previously identified for EC, and compared its expression to oestrogen receptor (ER)/progesterone receptor (PR) and E‐cadherin. We found that L1CAM was absent in normal endometrium and the vast majority of endometrioid ECs (type 1) but was strongly expressed in serous and clear‐cell ECs, considered as type 2. 78/272 cases were identified as L1CAM‐positive endometrioid ECs that were correlated with a poor prognosis. Strikingly, we observed an inverse relationship between L1CAM and ER/PR/E‐cadherin expression in all ECs. In mixed ECs, composed of endometrioid (L1CAM− ER/PR+ E‐cadherin+) and clear‐cell/serous (L1CAM+ ER/PR− E‐cadherin−), both phenotypes were co‐expressed. In some of these cases L1CAM was up‐regulated at the leading edge of the tumour, where ER/PR and E‐cadherin expression were selectively lost. In EC cell lines treated with the epithelial–mesenchymal transition (EMT) inducer TGFβ1, L1CAM and vimentin were strongly up‐regulated, while E‐cadherin expression was reduced. The treatment also resulted in an increased expression of the EMT transcription factor Slug and an enhanced cell invasion. Depletion of Slug by siRNA knockdown prevented both L1CAM up‐regulation and enhanced cell invasion. According to our analysis, we suggest that L1CAM is a novel marker for EMT in ECs and that L1CAM‐typing could identify endometrioid ECs that have type 2‐like features and are at high risk for recurrence. Copyright © 2009 Pathological Society of Great Britain and Ireland. Published by John Wiley & Sons, Ltd.
Dependence of interfacial strength on the anisotropic fiber properties of jute reinforced composites
Authors: Thomason J.L. 
Published: December 2009

AbstractThe upsurge in research on natural fiber composites over the past decade has not yet delivered any major progress in large scale replacement of glass fiber in volume engineering applications. This article presents data on injection‐molded jute reinforced polypropylene and gives a balanced comparison with equivalent glass reinforced materials. The poor performance of natural fibers as reinforcements is discussed and both chemical modification of the matrix and mercerization and silane treatment of the fibers are shown to have little significant effect on their level of reinforcement of polypropylene in comparison to glass fibers. A hypothesis is proposed to explain the poor performance of natural fibers relating their low level of interfacial strength to the anisotropic internal fiber structure. POLYM. COMPOS., 31:1525–1534, 2010. © 2009 Society of Plastics Engineers
Free leptin index and PAPP‐A: a first trimester maternal serum screening test for pre‐eclampsia
Authors: Hedley Paula L. , Placing Sophie , Wøjdemann Karen , Carlsen Anting Liu , Shalmi Anne‐Cathrine , Sundberg Karin , Tabor Ann , Christiansen Michael 
Published: December 2009

AbstractBackgroundProphylaxis with low‐dose aspirin may reduce the risk of pre‐eclampsia (PE) if introduced in first trimester. The performance of first trimester maternal serum screening for PE using free leptin index (fLI) and PAPP‐A, where fLI = leptin/leptin soluble receptor was studied.MethodsFirst trimester serum samples from 126 PE pregnancies and 289 control pregnancies were studied. fLI and PAPP‐A were converted into gestational age and maternal weight independent log MoM values of PAPP‐A and fLI. The screening performance of markers was studied by receiver‐operator‐characteristics curves. The performance of population screening was estimated by Monte Carlo simulation.ResultsfLI was significantly (p < 0.001) elevated [mean log MoM 0.2165 (SD: 0.2604)] compared to controls [mean log MoM −0.0368 (SD: 0.3132)] and PAPP‐A was significantly (p < 0.001) reduced [mean log MoM −0.0133 (SD: 0.2661)] compared to controls [mean log MoM 0.0474 (SD: 0.2521)] in PE pregnancies. There was no correlation between fLI and PAPP‐A in control or PE pregnancies. Combined fLI and PAPP‐A screening for PE had estimated population detection rates of 22% and 35% for false positives rates of 6% and 12%, respectively.ConclusionCombining PAPP‐A and fLI improves screening performance for PE compared to single marker screening. Copyright © 2009 John Wiley & Sons, Ltd.
How much do family physicians involve pregnant women in decisions about prenatal screening for Down syndrome?
Authors: Gagnon Susie , Labrecque Michel , Njoya Merlin , Rousseau François , St‐Jacques Sylvie , Légaré France 
Published: December 2009

AbstractObjectiveTo assess the extent to which family physicians (FPs) involve women in decisions about prenatal screening for Down syndrome.MethodsBased on transcripts of consultations between 41 FPs and 128 women, two raters independently assessed clinician's efforts to involve women in decisions about prenatal screening for Down syndrome using the French‐language version of OPTION. Descriptive statistics of OPTION scores were calculated. Construct validity was assessed by performing a principal factor analysis and by measuring association with consultation duration and FPs sociodemograhics. Internal consistency was assessed with Cronbach's alpha and inter‐rater reliability with the intraclass correlation coefficient.ResultsThe overall mean OPTION score was low: 19 ± 7 (range = 0 [no involvement] to 100 [high involvement]). One factor accounted for 80% of the variance. Both internal consistency and inter‐rater reliability were very good (Cronbach's alpha = 0.73; ICC = 0.76). OPTION scores were lower for residents than for licensed FPs (17 ± 5 vs 21 ± 4; p = 0.02) and were positively associated with duration of consultation (r = 0.56; p < 0.001).ConclusionBased on the French‐language version of OPTION, which showed satisfactory psychometric properties, FPs studied put minimal efforts to involve women in decisions about prenatal screening for Down syndrome. Copyright © 2009 John Wiley & Sons, Ltd.
Recent advances in the MOVPE growth of indium nitride
Authors: Ruffenach Sandra , Moret Matthieu , Briot Olivier , Gil Bernard 
Published: December 2009

AbstractSince a few years, indium nitride promising properties for device applications have attracted much attention worldwide. Huge efforts are dedicated to optimize indium nitride growth. However, this growth is extremely challenging, in particular using the metal organic vapor phase epitaxy (MOVPE) technique which exhibits very low growth rates. This may explain why most of the samples available in the scientific community, which also present the best electrical properties, were grown by molecular beam epitaxy (MBE). However, up to date, no intrinsic indium nitride layer was obtained. InN epilayer crystalline quality suffers from the lack of lattice matched substrates, leading to the use of double‐step growth process. In this paper, we show that InN low lateral growth rate is a limiting parameter for efficient double‐step growth process. But, we also report that the use of CBrCl3 during InN growth enhances the lateral growth rate. To improve the growth rate along the c‐axis, we investigate alternative precursors for both nitrogen and indium species. We show that ammonia remains the best precursor, but combined with triethylindium, the growth rate increases with optimum crystalline quality. Finally, we compare MOVPE‐grown and MBE‐grown InN layers in order to understand the difference observed on the electrical properties. We show how thermal annealing can improve the MOVPE‐grown InN layers leading to similar electrical properties than reported in MBE‐grown samples. The role of ammonia as source of hydrogen is also discussed.
Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high‐k gate dielectrics
Authors: Müller‐Sajak D. , Cosceev A. , Brand C. , Hofmann K. R. , Pfnür H. 
Published: December 2009

AbstractWe report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n‐Si(001) at room temperature without further treatments. These materials provide relative dielectric constants close to those expected from bulk values even for ultra‐thin films (equivalent oxide thicknesses below 1 nm) and posess very low rechargeable trap densities. Interface defect densities are comparable to other high‐k materials for BaO and SrO films, but an order of magnitude lower for Ba0.7Sr0.3O. This demonstrates the importance of both chemical and structural interface effects (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
GaN and LED structures grown on pre‐patterned silicon pillar arrays
Authors: Li Shunfeng , Fündling Sönke , Sökmen Ünsal , Merzsch Stephan , Neumann Richard , Hinze Peter , Weimann Thomas , Jahn Uwe , Trampert Achim , Riechert Henning , Peiner Erwin , Wehmann Hergo‐Heinrich , Waag Andreas 
Published: December 2009

AbstractGaN nanorods (or nanowires) have attracted great interest in a variety of applications, e.g. high‐efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In contrast to the mostly investigated self‐assembled growth of GaN nanorods, we performed GaN nanorod growth by pre‐patterning of the Si substrates. The pattern was transferred to Si substrates by photolithography and cryo‐temperature inductively‐coupled plasma etching. These Si templates then were used for further GaN nanorod growth by metal‐organic vapour phase epitaxy (MOVPE). The low temperature AlN nucleation layer had to be optimized since it differs from its 2D layer counterpart on the surface area and orientations. We found a strong influence of diffusion processes, i.e. the GaN grown on top of the Si nanopillars can deplete the GaN around the Si pillars. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the pyramidal GaN nanostructures and terminate. Cathodoluminescence measurements reveal a difference of In composition and/or thickness of InGaN quantum wells on the different facets of the pyramidal GaN nanostructures. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy
Authors: Farivar Rashid , Andersson Thorvald G. 
Published: December 2009

AbstractElemental boron was thermally deposited, using the MBE‐technique, on surfaces of AlN and GaN. To suppress boron clustering, nitrogen was supplied from an RF nitrogen plasma source. Reflection high energy electron diffraction was used to monitor the surface before and during the growth. On the GaN surface, low concentrations of boron (∼0.1 ML) resulted in additional 6‐fold highly streaky reflection rods indicating a reconstructed GaN(0001) surface. By increasing the boron concentration to ∼0.5 ML, however, the growth resulted in the formation of 3D islands as observed by spots in the RHEED pattern. Islands were also observed by atomic force microscopy and scanning electron microscopy. The AlN surface produced surface morphological features already for the lowest boron concentration, i.e. ∼0.1 ML coverage. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Boule‐like growth of GaN by HVPE
Authors: Richter Eberhard , Zeimer Ute , Brunner Frank , Hagedorn Sylvia , Weyers Markus , Tränkle Günther 
Published: December 2009

AbstractGaN substrates are indispensable for fabrication of blue laser diodes. Growth and cutting of HVPE grown GaN boules is currently the most promising route for cost‐efficient supply of 2 inch c‐plane substrates. But boule lengths and growth rates are still rather low constricted by formation of cracks and morphological defects (V‐pits). It is shown here that the formation of morphological defects in HVPE depends on the growth conditions. The control of their formation allows for high growth rates of about 500 μm/h with improving material quality during growth. Using optimized growth parameters a threading dislocation density of 3x106 cm‐2 and narrow line widths below 100 arcsec of x‐ray rocking curves were obtained for a 3 mm thick GaN layer grown on a GaN/sapphire template (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electrical characterization of an interface n‐type conduction channel in cubic GaN/AlGaN heterostructures
Authors: Zado A. , Tschumak E. , Lischka K. , As D. J. 
Published: December 2009

AbstractWe report on the growth of non‐polar cubic GaN/AlxGa1‐xN heterostructures by plasma‐assisted molecular beam epitaxy on free standing (001) 3C‐SiC substrates. The samples consist of 600 nm thick GaN buffer and 30 nm AlxGa1‐xN layer. The growth was observed by in‐situ reflection high energy electron diffraction (RHEED). Layer thickness was determined by AlxGa1‐xN RHEED growth oscillations and by reflectance measurements after growth. The morphological and the structural properties are analyzed by high resolution x‐ray diffraction (HRXRD) and atomic force microscopy (AFM). Using a metal oxide semiconductor heterostructure (MOSH), capacitance voltage (CV) characteristics were measured. The oxide layer consists of SiO2, the thickness was varied between 15 nm and 30 nm. SiO2 layer was produced by plasma enhanced chemical vapour deposition (PECVD). The contact structure is lithographically deposited on top of the sample. Metal contacts have a diameter of 300 μm and were thermally evaporated consisting of 15 nm Ni and 50 nm Au. By CV measurements of the MOSH structures we obtain clear evidence for the existence of an electron accumulation layer at the GaN/AlGaN interface. The sheet carrier concentration at the hetero‐interface is calculated from experimental data (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Identification of human calculi with time‐of‐flight secondary ion mass spectrometry
Authors: Ghumman C. Amjad A. , Carreira Olga M. T. , Moutinho Augusto M. C. , Tolstogouzov Alexander , Vassilenko Valentina , Teodoro Orlando M. N. D. 
Published: December 2009

AbstractTime‐of‐flight secondary ion mass spectrometry was used to study four human calculi and to compare the results with those from twelve commercially available urinary calculi minerals including three organic compounds (L‐cystine, uric acid and sodium urate). Phase identification of calcium phosphate compounds was carried out by considering the relative ion abundances of [Ca2O]+ and [CaPO2]+. Deprotonated [M–H]− and protonated [M+H]+ uric acid were detected and used for component recognition in pure uric acid and in the mixed samples of struvite, calcium oxalate and uric acid. Iodine related to the medical history of a patient was also detected. Copyright © 2009 John Wiley & Sons, Ltd.
Applications of electrospray laser desorption ionization mass spectrometry for document examination
Authors: Cheng Sy‐Chyi , Lin Yu‐Shan , Huang Ming‐Zong , Shiea Jentaie 
Published: December 2009

AbstractWe have employed electrospray laser desorption ionization mass spectrometry (ELDI‐MS) to rapidly characterize certain classes of compounds – the inks within the characters made by inks and inkjet printer on regular paper and the chemical compounds within thermal papers. This ELDI‐MS approach allowed the ink and paper samples to be distinguished in terms of their chemical compositions. Sample pretreatment was unnecessary and the documents were practically undamaged after examination. The ink chemicals on the documents were desorbed through laser irradiation (sampling spot area: <100 µm2); the desorbed molecules then entered an electrospray plume – prepared from an acidic methanol/water solution (50%) – where they became ionized through fusion or ion‐molecule reactions with the charged solvent species and droplets in the plume. Copyright © 2009 John Wiley & Sons, Ltd.
An evaluation of permeable reactive barrier projects in California
Authors: Muegge John P. , Hadley Paul W. 
Published: December 2009

AbstractPermeable reactive barriers made of zero‐valent iron (ZVI PRBs) have become a prominent remediation technology in addressing groundwater contamination by chlorinated solvents. Many ZVI PRBs have been installed across the United States, some as research projects, some at the pilot scale, and many at full scale. As a passive and in situ remediation technology, ZVI PRBs have many attractive features and advantages over other approaches to groundwater remediation. Ten ZVI PRBs installed in California were evaluated for their performance. Of those ten, three are discussed in greater detail to illustrate the complexities that arise when quantifying the performance of ZVI PRBs, and to provide comment on the national debate concerning the downgradient effects of source‐zone removal or treatment on plumes of contaminated groundwater. © 2009 Wiley Periodicals, Inc.
Applications of mulch biowalls—three case studies
Authors: Morris Kevin A. 
Published: December 2009

AbstractMulch biowalls are proving to be an effective means of generating reducing conditions for the in situ anaerobic reduction of contaminants in groundwater that are amenable to the reduction process. Mulch is an inexpensive and readily available substrate that provides a long‐lasting carbon and electron donor source for the stimulation of the anaerobic reduction process in groundwater. Examples of contaminants that are amenable to the biotic anaerobic reduction process include: chlorinated alkenes and alkanes, explosives, perchlorate, some metals, and petroleum hydrocarbons. The microbial degradation of cellulose fibers (mulch) is arguably the oldest reduction process known and is evident anywhere that plant material, soil, and water are present together. This article presents three case studies discussing three different uses of mulch biowalls to stimulate the anaerobic bioremediation of contaminants in shallow soils and groundwater. © 2009 Wiley Periodicals, Inc.
Assessment and monitoring tools for aerobic bioremediation of vinyl chloride in groundwater
Authors: Begley James F. , Hansen Eric , Wells Amanda K. , Fogel Samuel , Begley Gail S. 
Published: December 2009

AbstractDirect aerobic biodegradation of vinyl chloride (VC) offers a remedial solution for persistent vinyl chloride plumes that are not amenable to the anaerobic process of reductive dechlorination because of either prevailing geochemical conditions or the absence of active Dehalococcoides ethenogenes. However, tools are needed to evaluate and optimize aerobic VC bioremediation. This article describes the development and testing of two techniques—a microbiological tool and a molecular tool—for this purpose. Both methods are based on detection of bacteria that can use vinyl chloride and ethene as growth substrates in the presence of oxygen. The microbiological tool is an activity assay that indicates whether bacteria capable of degrading ethene under aerobic conditions are present in a groundwater sample. This activity assay gave positive results in the area of active VC degradation of an aerobic VC bioremediation test site. A rapid semiquantitative genetic assay was also developed. This molecular tool, based on polymerase chain reaction (PCR) detection of a gene involved in the metabolism of both ethene and VC, revealed the presence of potential VC degraders in an enrichment culture and site groundwater. These tools could provide a basis for judging the potential of aerobic VC degradation by ethenotrophs at other sites in addition to offering a mechanism for treatment monitoring and system optimization. © 2009 Wiley Periodicals, Inc.
Interior versus exterior configurations of passive wells with filter cartridges for cleaning contaminated groundwater
Authors: Hudak Paul F. 
Published: December 2009

AbstractThis study considered alternative configurations of passive wells equipped with filter cartridges for removing contaminated groundwater. The wells fully penetrated a simulated unconfined aquifer. Both homogeneous and heterogeneous hydraulic conductivity distributions were considered. An initial configuration comprised wells along the downgradient perimeter of a contaminant plume, spaced 0.5 m in the direction transverse to regional groundwater flow. Additional wells near the downgradient tip of the plume prevented off‐site contamination. Alternative configurations had the same number of wells, but some included wells along higher (interior) concentration contours to facilitate quicker removal of the contaminant plume. Results suggest that downgradient configurations generally outperform alternatives, although repositioning a few outer wells near the contaminant source may be effective in some cases. © 2009 Wiley Periodicals, Inc.
Motion Control at the Nanoscale
Authors: Wang Joseph , Manesh Kalayil Manian 
Published: December 2009

AbstractSynthetic nanoscale motors represent a major step in the development of practical nanomachines. This Review summarizes recent progress towards controlling the movement of fuel‐driven nanomotors and discusses the challenges and opportunities associated with the achievement of such nanoscale motion control. Regulating the movement of artificial nanomotors often follows nature's elegant and remarkable approach for motion control. Such on‐demand control of the movement of artificial nanomotors is essential for performing various tasks and diverse applications. These applications require precise control of the nanomotor direction as well as temporal and spatial regulation of the motor speed. Different approaches for controlling the motion of catalytic nanomotors have been developed recently, including magnetic guidance, thermally driven acceleration, an electrochemical switch, and chemical stimuli (including control of the fuel concentration). Such ability to control the directionality of artificial nanomotors and to regulate their speed offers considerable promise for designing powerful nanomachines capable of operating independently and meeting a wide variety of future technological needs.
Intracerebral Transplantation of Bone Marrow-Derived Mesenchymal Stem Cells Reduces Amyloid-Beta Deposition and Rescues Memory Deficits in Alzheimer's Disease Mice by Modulation of Immune Responses
Authors: Lee Jong Kil , Jin Hee Kyung , Endo Shogo , Schuchman Edward H. , Carter Janet E. , Bae Jae-sung 
Published: December 2009

AbstractAlzheimer's disease (AD) is characterized by the deposition of amyloid-β peptide (Aβ) and the formation of neurofibrillary tangles. Transplantation of bone marrow-derived mesenchymal stem cells (BM-MSCs) has been suggested as a potential therapeutic approach to prevent various neurodegenerative disorders, including AD. However, the actual therapeutic impact of BM-MSCs and their mechanism of action in AD have not yet been ascertained. The aim of this study was therefore to evaluate the therapeutic effect of BM-MSC transplantation on the neuropathology and memory deficits in amyloid precursor protein (APP) and presenilin one (PS1) double-transgenic mice. Here we show that intracerebral transplantation of BM-MSCs into APP/PS1 mice significantly reduced amyloid β-peptide (Aβ) deposition. Interestingly, these effects were associated with restoration of defective microglial function, as evidenced by increased Aβ-degrading factors, decreased inflammatory responses, and elevation of alternatively activated microglial markers. Furthermore, APP/PS1 mice treated with BM-MSCs had decreased tau hyperphosphorylation and improved cognitive function. In conclusion, BM-MSCs can modulate immune/inflammatory responses in AD mice, ameliorate their pathophysiology, and improve the cognitive decline associated with Aβ deposits. These results demonstrate that BM-MSCs are a potential new therapeutic agent for AD.