Preface – Symposium I: Phys. Status Solidi C 3/2011
Authors: Kissinger G. , Pizzini S. , Tu H. , Yamada‐Kaneta H. 
Published: March 2011

AbstractAdvanced silicon materials research is crucial to meet the requirements of future microelectronics, nano‐electronics, photovoltaics, and power electronics. Fundamental research as well as technological problems associated with point defects and extended defects in bulk silicon and silicon devices, ranging from microelectronic, photovoltaic and power devices applications are still in the center of interest. Next generation silicon technologies with ongoing scaled down feature size of transistors are asking for improved large area silicon material. Improved silicon crystal pulling and wafering processes with reduced density of crystal defects, defect engineered silicon wafers, and the improvement of material features by doping and co‐doping with light elements are one of the major approaches to meet the requirements of technologies beyond 40 nm to the silicon substrate material. Automotive applications will increase the demand for power devices to be used in electric cars. Photovoltaics are enormously rising in importance worldwide. The conversion efficiency is increasing as a result of better understanding of the conversion limiting factors and of innovations provided by materials research. As well, the final module cost should fall dramatically as a result of the availability of both low cost poly arising from advanced production processes and of solar grade silicon. Thin film technologies will give a substantial contribution to the photovoltaic sector as well, provided their efficiency will be substantially increased.Third generation silicon solar cells, with their potential of being the ultimate device for efficient sun light harnessing will be probably rely to the application of silicon dots and/or wires.Our second symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications has again brought together more than 200 scientists from Industry, University and Research Centers thus creating a forum to discuss scientific results in material research and their applications for electronic and solar silicon, including nanotechnological developments. Strong contributions from Asia, America, Australia, and Europe were presented in 14 sessions and 2 poster sessions. In total, 83 oral and 129 poster presentations have made of this Symposium a fruitful expert meeting with mutual benefits arising from the interaction and scientific exchange between the communities working in photovoltaics and microelectronics. The symposium was dedicated to Ulrich Gösele, who died last year and left tremendous contributions to the world in the field of this symposium. Highlights of the symposium were a strong attitude to innovations, exciting new results in the field of nanocrystalline and polycrystalline thin films for solar cells, inspiring talks on point defects and their impact on device performance, progress in silicon crystal growth and improvements in measurement techniques. In summary, the success of Symposium I was the result of high quality contributions and inspiring discussions in all sessions (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)