bluuebunny/crossref_metadata_2025_split huggingface dataset:
Rapid Thermal Annealing of Tisi2 for
Interconnects
Authors: Rosser P.J. , Tomkins G.J. 
Published: March 2011

ABSTRACTA self-aligned polycide gate interconnect process has been developed at STL
in order to reduce the RC delays in existing and planned MOS circuits. This
process has been chosen due to its ease of implementation into an existing
process line. Incoherent lamp annealing is used to form the silicide after
the deposition of titanium over patterned polysilicon.This paper will discuss the various materials and processes considered,
outlining the significant attributes of each. The factors which must be
controlled to achieve a practical process are discussed, together with the
degree of redistribution of dopants and the role of other impurities.
The Microstructure of Transiently Annealed Donor Implants in
GaAs
Authors: Shahid M.A. , Bensalem R. , Sealy B.J. 
Published: March 2011

ABSTRACTUndoped SI (100) GaAs has been implanted with selenium and tin ions at room
temperature at an ion energy of 300 keV and using ion dose in the range 1 ×
1014 to 1 × 1015 ions cm−2. Transient
annealing at 1000°C and above has been studied using electrical measurements
and transmission electron microscopy. The results show that tin implanted
samples have comparatively higher values of electrical activity and mobility
than those implanted with selenium ions. A difference in the microstructure
of these two implants was observed. Selenium implanted samples show
dislocation lines and loops possessing 1/2<110> Burgers vectors while
tin implanted GaAs contains dislocation loops of 1/2<110> and
1/3<111> types and also dislocation lines having 1/2<110>
Burgers vectors. Both types of defect in tin implanted samples are decorated
with precipitates.
Rapid Thermal Annealing of Si-Implanted GaAs for Power
FETs
Authors: Kanber H. , Cipolli R. J. , Whelan J. M. 
Published: March 2011

ABSTRACTOptimization and the advantages of rapid thermal annealing (RTA) for the
electrical activation of deep 300 keV Si+ implants into GaAs are
investigated and established for doses of 6 to 8×1012
cm−2. These implant conditions are appropriate for power FETs.
Results are compared with those based on conventional controlled atmosphere
capless furnace annealing (CAT).The RTA yielded higher peak electron concentrations, high mobilities and
greater uniformities in the gateless FET saturation currents. The deep
implant results ontrast with those for shallower implants for low noise
FETs. These differences are explained using a well-known implant damage
model.
Ion-Induced Mixing in Ni-Sio2
Bilayers
Authors: Banwell T. C. , Nicolet M-A. , Grunthaner P. J. , Sands T. 
Published: March 2011

ABSTRACTWe report on our studies of Ni transport induced by 300 keV Xe irradiation
of 25 nm Ni films evaporated on thermally grown SiO2 at Xe
fluences of 1013-1016 cm-2 and at
temperatures of 300-750 K during irradiation. Cross-sectional TEM, and
selective etching combined with 2 MeV He backscattering spectrometry and
ESCA were used to profile the Xe and Ni within the SiO2. At 300
K, backscattering shows cascade mixing dominates, although only ~ 1/35 that
predicted by cascade theory, with most of the Ni in the SiO2
contained in a resolution limited peak adjacent to the SiO2
interface. TEM shows that this Ni is contained in a 5 nm band, 5 nm below
the interface as Ni oxide clusters. Examination of the satellite structure
of the Ni 2p line by XPS also shows this band is predominantly
Ni2+. At 750 K, the near-surface peak vanishes and only recoil
implantation is evident. Ni0 is evident by XPS in samples irradiated at 300
K, though not at higher temperatures. We explain our results in terms of
phase separation during cooling of the collision cascade.
Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous
and Single Crystal Silicon
Authors: Olowolafe J. O. , Fastow R. 
Published: March 2011

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and
amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed
using Rutherford backscattering, x-ray diffraction, and transmission
electron microscopy. Rutherford backscattering showed that the metal/a-Si
and metal/(100)-Si reaction rates were comparable. Both reactions began at
the composition of the lowest eutectic. For comparison. furnace annealing of
the same structures showed that the reaction rate of Ni with amorphous
silicon was greater than with (100) Si; Co reacted nearly identically with
both substrates. Diffraction data suggest that pulsed ion beam annealing
crystallizes the amorphous silicon before the metal/a-Si reaction
begins.
Solid-Liquid Interface Instability in the Energy-Beam
Recrystallization of Silicon on Insulator
Authors: Lee El-Hang 
Published: March 2011

ABSTRACTAn attempt has been made to systematically sort out the characteristic modes
of morphological transition in the energy beam recrystallized thin film
silicon on insulating substrates, and to relate them to the mechanisms of
solid-liquid interface stability breakdown. Stable to unstable breakdown
modes include faceted, cellular, and dendritic configurations as well as
transient and composite configurations thereof. These primary modes of
breakdown then lead to the secondary modes of breakdown which constitute the
sub-boundary formation. The mechanics of the primary (interface) breakdown
and that of the secondary (sub-boundary) breakdown must be clearly
differentiated in understanding the breakdown process. Constitutional
supercooling and absolute supercooling models have been used to explain the
various interface instabilities.
Characterization, Control, and Reduction of Subboundaries in
Silicon on Insulators
Authors: Geis M. W. , Chen C. K. , Smith Henry I. , Mountain R. W. , Doherty C. L. 
Published: March 2011

ABSTRACTSubboundaries are the major crystalline defects in thin semiconductor films
produced by zone-melting recrystallization (ZMR). Using transmission
electron microscopy (TEM) and chemical etching we have analyzed the angular
discontinuity and defect structure of subboundaries in ZMR Si films.
Annealing in oxygen has resulted in the elimination of dislocation bands
from sizable regions of some films. Calculations suggest that cellular
growth due to constitutional supercooling may not occur in some Si ZMR.
Improved Crystal Perfection in Zone-Recrystallized Si Films on
Sio2
Authors: Pfeiffer Loren , West K. W. , Paine Scott , Joy D. C. 
Published: March 2011

ABSTRACTWe review recent results of our Graphite Strip Heater Si-on-Insulator (SOI)
effort: (i) recrystallization of SOI films on 100 mm wafers, (ii) model of
subboundary pattern formation in SOI films, (iii) low defect density SOI
films by ultra slow scanning of the melt zone, (iv) low defect density SOI
films by patterned openings in the cap oxide overlayer.
Laser Recrystallization and 3D Integration
Authors: Colinge J.P. 
Published: March 2011

ABSTRACTThere are various methods for producing device-worthy Silicon-on-Insulator
films, most, however, are unsuitable for fabrication of 3D integrated
structures. The laser recrystallization technique is currently the only one
which has produced single-crystal devices for 3D ICs. Improvements on this
technique have been such that defects such as grain boundaries can be
localized and even eliminated. High speed CMOS circuits with VLSI features
have been realized as well as new devices which take advantage of the 3D
arrangement of vertically integrated structures. Although 3D integration is
still in the early stages of development, it has already opened up new
perspectives for applications such as high speed circuits, dense memories,
and sensors.
Single Crystalline SOI Square Islands Fabricated by Laser
Recrystallization Using a Surrounding Antireflection Cap and Successive
Self-Aligned Isolation Utilizing the Same Cap
Authors: Mukai R. , Sasaki N. , Iwai T. , Kawamura S. , Nakano M. 
Published: March 2011

ABSTRACTA new laser recrystallizing technique has been developedfor high density
SOI-LSI's. This technique produces single crystalline silicon islands on an
amorphous insulating layerwithout seed. Square windows are opened at
arbitrary places in an antireflection cap over a polycrystalline film on an
amorphous insulatinq layer. Grain boundaries of the polycrystalline Si in
the window are removed completely at the subsequent laser-recrystallization
step. Single crystalline silicon islands are formed by self-aligned etching
of silicon film which was covered by the antireflection cap. This technique
is an effective method for fabricating high density SOI-LSI's, since the
singlecrystalline islands can be fabricated at arbitrarily selected places.
Yield of the grain-boundary-free islands was 95% the size of the island is
1O x 20μm, and the irradiation oyerlap of laser-beam traces is 70%.
Formation of Si-On-Insulator Structure Under Solid Phase
Growth
Authors: Miyao M. , Moniwa M. , Warabisako T. , Sunami H. , Tokuyama T. 
Published: March 2011

ABSTRACTTwo possible solutions to the problem of nucleus growth encountered in
lateral solid-phase epitaxial growth over insulating films are discussed. A
stress field originating from the thermal expansion coefficient for Si and
SiO2 acts as the driving force behind preferential nucleation.
Utilization of underlying Si3N4 films successfully
eliminated nucleii growth at topographically irregular portions. In
addition, single crystallization of poly-Si nucleii was achieved on SOI
structures for the first time. Lateral growth speed (v [cm/s]) of 1.6 × 10
exp(−3.9/kT[eV]) was obtained during high-temperature annealing (≥1000 C
).
Solid Phase Processes for
Semiconductor-On-Insulator
Authors: Thompson C.V. 
Published: March 2011

ABSTRACTA wide variety of techniques for producing device-quality semiconductor
films on insulating substrates (SOI) are being studied. Processes which
provide low defect density films at low temperatures and which do not
require seeding from a single crystal substrate would offer the greatest
flexibility. While such processes do not currently exist, approaches based
on crystallization of amorphous silicon or grain growth in polycrystalline
silicon are being investigated. Development of either approach requires
careful control of film properties and improved understanding of the
fundamental materials processes involved. Theory and experiments on
surface-energy-driven secondary grain growth (SEDS6G) are briefly reviewed.
Controlled SEDS66 may provide a low temperature means of obtaining low
defect density films of a variety of materials on a common substrate.
Grain Growth Processes during Transient Annealing of
As-Implanted, Polycrystalline-Silicon Films
Authors: Krause S.J. , Wilson S.R. , Paulson W.M. , Gregory R.B. 
Published: March 2011

ABSTRACTPolycrystalline silicon films of 300 nm thickness were deposited on oxidized
wafer surfaces, implanted with As, and annealed on a Varian IA 200 rapid
thermal annealer. Transmission electron microscopy was used to study
through-thickness and cross sectional views of grain size and morphology of
as-deposited and of transient annealed films. A bimoda] distribution of
grain sizes was present in as-deposited polycrystalline silicon films. The
first population was due to columnar growth of some grains to a final
average diameter of 20 rm. The second population of small equiaxed grains of
5 nm average diameter were formed early in the deposition process. During
transient annealing grains in the first population grew rapidly up to 280-nm
equiaxed grains. After this the growth rate decreased due to the grain size
reaching the thickness of the film. Grains in the second population grew
rapidly up to a size of 150 nm, after which the growth rate was lowered due
to grains impinging upon one another. The grain growth processes for both
populations have been described with a modified model for interfacially
driven grain growth. This model accounts for diffusion and grain growth
which occur with rapidly rising and falling temperatures during short
annealing times characteristic of transient annealing processes.
Investigation of Point Defects in Si by Impurity Diffusion
Authors: Mizuo Shoichi , Higuchi Hisayuki 
Published: March 2011

ABSTRACTOur investigation of impurity diffusion in Si has clarified diffusion mechanisms and the point defect structure for the material. Thermal equilibrium between interstitials and vacancies in high temperature Si was clarified through observation of oxidation-retarded diffusion (ORD) of Sb in Si. Boron, Phosphorus, Aluminum and Galium were found to diffuse mainly due to an interstitialcy mechanism, while Sb did by a vacancy mechanism. Moreover, the atomic number in Si crystal compared to that at lattice sites was seen to play a dominant role in determining point defect concentration. Oxidation of Si and nitridation of SiO2on Si lead to an increase in the atomic number of Si crystals and cause an increase in interstitial concentration as well as a decrease in vacancy concentration. On the other hand, nitridation of Si leads to a decrease in atomic number and causes vacancy super-saturation as well as interstitial under-saturation.
Annealing and Diffusion of Boron in Self-Implanted Silicon by Furnace and Electron Beam Heating
Authors: Godfrey D. J. , McMahon R. A. , Hasko D. G. , Ahmed H. , Dowsett M. G. 
Published: March 2011

ABSTRACTThe annealing and diffusion behaviour of ion implanted boron over a wide range of doses in as-received and pre-amorphised silicon (180 keV 5 × 1015 cm−2 silicon implants) has been studied using conventional furnace annealing and multiple scan electron beam heating in the rapid isothermal annealing mode. The layers obtained have been characterised using spreading resistance profiling (SRP), SIMS and TEM.For furnace annealing the silicon implantation produces improved electrical activation for boron doses in excess of 1015 cm−2. SIMS and SRP data indicate that a higher level of peak activation has been achieved, whilst the overall amount of redistribution has been restricted. The reduction in diffusion achieved (∼0.2 μm) is greater than the maximum difference attributable to the effect of lower ion channelling for the silicon implanted samples. Cross-sectional TEM has been used to determine the resulting defect structure and provides insight into the details of the stable precipitated boron surface peak observed. A numerical diffusion model has been developed to allow interpretation of these experimental findings.Similar samples have been annealed using multiple scan electron beam heating (peak temperatures up to 1100°C for times up to 300 s). For silicon implanted with boron alone, where cooling commenced once the peak temperature of 1100°C had been reached, diffusion was restricted to 0.05 μm while the sheet resistance (32 Ω/square) was reduced by ∼25% compared to furnace anneals at 950°C. Identical annealing of silicon implanted samples produced improved activation with a sheet resistance of 26 Ω/square. Results from SIMS, SRP and TEM analysis of these experiments are reported.
On the Interaction of Intrinsic and Extrinsic Gettering Schemes in Silicon
Authors: Yang K. H. , Tan T. Y. 
Published: March 2011

ABSTRACTWe report some results of an experiment designed to study the interaction of extrinsic-gettering (EG) and intrinsic-gettering (IG) schemes. We found that mechanical abrasion introduces interstitial type dislocations into the wafer backside, and produces a concave wafer frontside. The EG dislocation network enhances SiO2 precipitation which is responsible for the IG activity. The enhancement is most significant near the wafer backside. The interaction arises most probably because the dislocation network serves as a very efficient source/sink for point defects.
Nucleation Time Effects on Intrinsic Gettering
Authors: Wongm C.-C. D. , Malwah M. L. , Pollock L. 
Published: March 2011

ABSTRACTIn this study, nucleation time has been found to play an important role in the three-step (Hi-Lo-Hi) intrinsic gettering process. The longer the nucleation time, the higher the density of oxygen precipitates and oxidation induced stacking faults. The size of oxidation induced stacking faults, however, shrinks as the nucleation time increases. The reduction of junction leakage current indicates that gettering efficiency improves with increasing nucleation time. Oxidation induced stacking faults appear to be the dominant gettering sites.
Temperature Ramping for Nucleation of Oxygen Precipitates in Silicon
Authors: Pinizzotto R. F. , Schaake H. F. , Massey R. G. , Heidt D. W. 
Published: March 2011

ABSTRACTA new method for the nucleation of oxygen precipitates in Czochralski silicon is described. The temperature is ramped at approximately 100°C/hr from a very low value, near 400°C, to the highest temperature used for subsequent process steps. The technique generates a larger precipitate number density and a greater volume fraction of precipitated oxygen than standard isothermal nucleation anneals. The morphology of the precipitates changes from 0.lum sizéd (100) platelets to small particles unresovable by TEM. The new temperature ramping technique can reduce the time needed for precipitate nucleation by at least a factor of three. The details of oxygen precipitation can be totally controlled by adjusting the temperature ramp rate as a function of time.
Pressure Dependence of Arsenic Diffusivity in Silicon
Authors: Nygren Eric , Aziz Michael J. , Turnbull David , Hays James F. , Poate John M. , Jacobson Dale C. , Hull Robert 
Published: March 2011

ABSTRACTThe diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000°C under pressures up to 30 kilobars. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of ten. This diffusivity enhancement can be described by an average activation volume of -5.7±.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 eV to 3.6 eV at 30 kilobars
Epitaxial Silicon on Yttria-Stabilized Cubic Zirconia (YSZ) and Subsequent Oxidation of the Si/YSZ Interface
Authors: Mercandalli L. M. , Pribat D. , Dupuy M. , Arnodo C. , Rondi D. , Dieumegard D. 
Published: March 2011

Astract(100) single crystal silicon films have been deposited onto (100) oriented Yttria-Stabilized Zirconia (YSZ) substrates by pyrolysis of SiH4 at ∼ 980°C.The as deposited epitaxial silicon films have been characterized by Reflexion High Energy Electron Diffraction and Transmission Electron Microscopy techniques.The as deposited silicon films have also been oxidized by oxygen transport through the substrate, resulting in a Si(100)/ amorphous SiO2/YSZ(100) structure in which the most defective part of the epitaxial silicon deposit has been eliminated. The oxidized interfaces (with SiO2 thicknesses in the 2000 Å range) have then been characterized by Transmission Electron Microscopy in order to assess the improvement in crystalline quality. Electrical measurements have also been performed on MOS-Hall bar structures.
Strained-Layer Superlattices and Strain-Induced Light Holes
Authors: Osbourn G. C. 
Published: March 2011

AbstractThe capability of growing high quality strained-layer superlattices (SLS's) from lattice-mismatched semiconductors opens up new opportunities in both basic and applied material sciences. This flexibility in the choice of SLS layer materials allows the study of quantum well effects in a variety of new and interesting heterojunction systems. In addition, the large tetragonal distortions of the SLS layers allow these structures to exhibit unique features which are not found in bulk semiconductors. An exciting example is the possibility of tailoring certain SLS materials so that they exhibit small two dimensional hole effective masses and enhanced low field hole mobilities at low temperatures and low carrier concentrations. Band structure calculations indicate that the layer strains, the direct band gap magnitudes of the layers, the valence band offset, and the hole energies all can play a role in determing these small two dimensional hole effective mass values.
Luminescence Properties of InxGa1-xAs-GaAs Strained-Layer Superlattices
Authors: Anderson N. G. , Laidig W. D. , Lee G. , Lo Y. , Ozturk M. 
Published: March 2011

AbstractThe low-temperature (20K) photoluminescence of InxGa1-xAs and InxGal-xAs - GaAs strained-layer superlattices (SLS's) grown by molecular beam epitaxy (MBE) is investigated. Data are presented for thick (bulk) epitaxial layers grown directly on GaAs and for relatively-thin (˜600Å) InxGa1-xAs layers under biaxial compression. Data are also presented for two series of SLS's. In the two series of SLS's, the InxGa1-xAs layer thickness (Lz) is held constant while only the GaAs layer thickness (LB) is varied. The photoluminescence (PL) spectra of the crystals are useful in analyzing the effects of biaxial strain, carrier confinement, and barrier layer thicknesses in SLS's. Results are compared with calculations based upon a modified Kronig-Penney model which incorporates the appropriate deformation potentials for SLS analysis. This type of analysis, in agreement with experimental data, suggests that the electron-to-light-hole transition can be lower in energy than the electron-to-heavy-hole transition in SLS's, depending upon layer thickness and crystal composition.
Interfacial Structure and Stability in GexSi1−x/Si Strained Layers.
Authors: Hull R. , Bean J. C. , Gibson J. M. , Marcantonio K. J. , Fiory A. T. , Nakahara S. 
Published: March 2011

AbstractHigh resolution electron microscopy is used to probe the atomic scale structure of interfaces and defects in the GexSi1−x/Si system. By careful quantification of lattice images, it is shown that molecular beam epitaxy may be used to grow GexSi1−x/Si (100) and (111) interfaces which are sharp on the scale of the unit cell and flat to within a few atomic planes when about 5000 Å2 of the interface are sampled. Interfacial quality is retained in single and multiple quantum well structures. Conditions for superlattice stability against misfit dislocations are discussed. It is shown that GexSi1−x/Si interfaces produced by molecular beam epitaxy at 550°C can exist in a metastable state which relaxes upon thermal annealing.
A Review of Recent Results on Single Crystal Metastable Semiconducfors: Crystal Growth, Phase Stability, and Physical Properties
Authors: Barnett S. A. , Kramer B. , Romano L. T. , Shah S. I. , Ray M. A. , Fang S. , Greene J. E. 
Published: March 2011

AbstractRecent results on metastable semiconducting alloys, concerning in particular the growth of new Sn-based alloys (GaSb)1−x(Sn2)x and Gel−xSnx and the physical properties of (GaAs)1−x(Ge2)x and (GaSb)1−x(Ge2)x, are discussed. (GaSb)1−x(Sn2)x and Ge1−xSnx alloy films were grown with x-values as high as 0.20 and 0.15, respectively, well in excess of equilibrium Sn solid solubility limits (<1%) while epitaxial (GaAs)1−x(Ge2) and (GaSb)1−x(Ge2)x alloys were obtained on (100) GaAs at compositions ranging across the pseudobinary phase diagram. Low energy ion bombardment induced collisional mixing and preferential sputtering during film growth played a critical role in obtaining single phase alloys. An optimal ion energy, which depended on the ion flux and the alloy composition, was determined, allowing in most cases growth at temperatures T, sufficient for obtaining single crystal alloys on (100) GaAs and (100) Ge substrates. Decomposition of the Sn-based alloys occurred above a critical Ts- value via α-Sn-rich precipitates which were stable above the β-Sn melting point. X-ray diffraction, STEM, EXAFS, and Raman spectroscopy measurements, performed on single crystal (GaAs)1−x(Ge2)x and (GaSb)1−x(Ge2)x alloys, indicate that there is a transition in the long-range order from zincblende to diamond with increasing x while the short-range order remains perfect at all compositions, i.e. no V-V or III-Ill bonds are observed. These results are discussed in light of recent models which relate (GaAs)1−x(Ge2)x atomic structure to its band structure and optical properties.