bluuebunny/crossref_metadata_2025_split huggingface dataset:
Psychological well‐being outcomes in disease‐free survivors of mid‐low rectal cancer following curative surgery
Authors: Serpentini Samantha , Del Bianco Paola , Alducci Elisa , Toppan Paola , Ferretti Francesca , Folin Marcella , De Salvo Gian Luca , Nitti Donato , Pucciarelli Salvatore 
Published: May 2010

AbstractObjective: The aim of this cross‐sectional study was to evaluate psychological well‐being outcomes in disease‐free survivors who previously underwent radical surgery for rectal adenocarcinoma.Methods: All patients with rectal adenocarcinoma who underwent primary surgery at a single institution from 1990 to 2002 were considered for inclusion in the study. We identified and sent questionnaires to 145 patients after excluding those who had died or had recurrent disease. One hundred and seventeen patients (men/women: 74/43; median age: 65 years) returned the questionnaires. Patients' well being was evaluated using the Psychological General Well‐Being Index (PGWBI) questionnaire. The mean PGWBI score was compared with normative data of the general population. The impact of patient‐, tumor‐ and treatment‐related factors on patients' long‐term psychological well‐being status was also evaluated.Results: Compared with the general population, study patients had significantly better anxiety, depressed mood, positive well being, general health, vitality scales and global index scores. On multivariate analysis, positive well being was independently affected by time from diagnosis (36 months; p=0.025) and occurrence of early major complications (p=0.024). Variables that were independently associated with worse self‐control included primary education (p=0.04) and the presence of fecal urgency (p=0.049). General health was negatively affected by time from diagnosis (36 months; p=0.047) and fecal urgency (p=0.009).Conclusions: Patients who have survived cancer are likely to re‐evaluate the importance of everyday events and this may explain why they had better PGWBI scores. This study also identified that a short time from diagnosis, early adverse events and bowel dysfunction had a negative impact on patients' well being. Copyright © 2010 John Wiley & Sons, Ltd.
Interdisciplinary collaboration in the pursuit of science to improve psychosocial cancer care
Authors: McCorkle Ruth 
Published: May 2010

AbstractObjective: Drawing on her substantial research experience in oncology and nursing, the 2009 Fox Award winner, Dr McCorkle, describes ways to advance the science of psychosocial oncology through collaboration.Methods: Critical literature illustrating barriers to collaboration and successful collaborative process are reviewed and compared to the author's personal experiences.Results: Currently, many researchers are beginning to see the need for collaboration, and yet many infrastructures, universities, and centers continue to create isolated researchers and research environments. Despite the need, there is a dearth of practical and tangible guidelines as well as theoretical defenses for performing collaborative research. This article addresses these gaps with such insights as the need for a team of experts built on humility and trust, pre‐ and post‐study networks across disciplines and settings, consistent meetings of staff as well as resources to support them, intervention monitoring techniques, and the crucial necessity for a stable institutionalized infrastructure that fosters collaboration, research and mentoring despite inevitable personnel turnover.Conclusions: These insights that stem from the distinctive nursing lens provide crucial methods for advancing the science and addressing the uniquely interdisciplinary nature of oncology. Copyright © 2010 John Wiley & Sons, Ltd.
Thermochemistry and Thermodynamics of Trinitrophloroglucinol Dissolved in DMF and EtOH at 298.15 K
Authors: Yang Li , Xue Bing , Wang Shengsheng , Zhang Tonglai , Zhang Jianguo 
Published: May 2010

AbstractThe enthalpies of solution of 2,4,6‐trinitro‐1,3,5‐trihydroxybenzene (trinitrophloroglucinol, TNPG) in N, N‐dimethylformamide (DMF) and EtOH are determined. The thermodynamics of these processes are also studied. The experiments are carried out by a SETARAM C80 calorimeter at 298.15 K. The empirical formulas for enthalpies of solution of TNPG in both DMF and EtOH are calculated by polynomial expressions. The resulting formulas are: $\rm{\Delta _{{\rm{sol}}} H = - 97.23375 + 1646.78192b^{{1 \mathord{\bigg/ {\vphantom {1 2}} \kern-\nulldelimiterspace} 2}} - 6903.38866b}$ (in DMF), and $\rm{\Delta _{{\rm{sol}}} H = 93.19133 - 1731.03621b^{{1 \mathord{\bigg/ {\vphantom {1 2}} \kern-\nulldelimiterspace} 2}} + 8016.6928b}$ (in EtOH).
Automated electron‐density sampling reveals widespread conformational polymorphism in proteins
Authors: Lang P. Therese , Ng Ho‐Leung , Fraser James S. , Corn Jacob E. , Echols Nathaniel , Sales Mark , Holton James M. , Alber Tom 
Published: May 2010

AbstractAlthough proteins populate large structural ensembles, X‐ray diffraction data are traditionally interpreted using a single model. To search for evidence of alternate conformers, we developed a program, Ringer, which systematically samples electron density around the dihedral angles of protein side chains. In a diverse set of 402 structures, Ringer identified weak, nonrandom electron‐density features that suggest of the presence of hidden, lowly populated conformations for >18% of uniquely modeled residues. Although these peaks occur at electron‐density levels traditionally regarded as noise, statistically significant (P < 10−5) enrichment of peaks at successive rotameric χ angles validates the assignment of these features as unmodeled conformations. Weak electron density corresponding to alternate rotamers also was detected in an accurate electron density map free of model bias. Ringer analysis of the high‐resolution structures of free and peptide‐bound calmodulin identified shifts in ensembles and connected the alternate conformations to ligand recognition. These results show that the signal in high‐resolution electron density maps extends below the traditional 1 σ cutoff, and crystalline proteins are more polymorphic than current crystallographic models. Ringer provides an objective, systematic method to identify previously undiscovered alternate conformations that can mediate protein folding and function.
Domain distribution and intrinsic disorder in hubs in the human protein–protein interaction network
Authors: Patil Ashwini , Kinoshita Kengo , Nakamura Haruki 
Published: May 2010

AbstractIntrinsic disorder and distributed surface charge have been previously identified as some of the characteristics that differentiate hubs (proteins with a large number of interactions) from non‐hubs in protein–protein interaction networks. In this study, we investigated the differences in the quantity, diversity, and functional nature of Pfam domains, and their relationship with intrinsic disorder, in hubs and non‐hubs. We found that proteins with a more diverse domain composition were over‐represented in hubs when compared with non‐hubs, with the number of interactions in hubs increasing with domain diversity. Conversely, the fraction of intrinsic disorder in hubs decreased with increasing number of ordered domains. The difference in the levels of disorder was more prominent in hubs and non‐hubs with fewer domains. Functional analysis showed that hubs were enriched in kinase and adaptor domains acting primarily in signal transduction and transcription regulation, whereas non‐hubs had more DNA‐binding domains and were involved in catalytic activity. Consistent with the differences in the functional nature of their domains, hubs with two or more domains were more likely to connect distinct functional modules in the interaction network when compared with single domain hubs. We conclude that the availability of greater number and diversity of ordered domains, in addition to the tendency to have promiscuous domains, differentiates hubs from non‐hubs and provides an additional means of achieving interaction promiscuity. Further, hubs with fewer domains use greater levels of intrinsic disorder to facilitate interaction promiscuity with the prevalence of disorder decreasing with increasing number of ordered domains.
Apoptosis regulators Fau and Bcl‐G are down‐regulated in prostate cancer
Authors: Pickard Mark R. , Edwards Sandra E. , Cooper Colin S. , Williams Gwyn T. 
Published: May 2010

AbstractBACKGROUNDThe molecular control of cell death through apoptosis is compromised in prostate cancer cells, resulting in inappropriate cell survival and resistance to cytotoxic therapy. Reduced expression of the functionally connected apoptosis‐regulators and candidate tumor suppressors Fau and Bcl‐G has recently been implicated in oncogenesis in other tissues. The present study examines the hypothesis that reduced expression of these genes may be involved in prostate cancer.METHODSFau and Bcl‐G mRNA levels were determined by real time RT‐PCR in two independent prostate tissue collections. In experiments in vitro, Fau and Bcl‐G levels in prostate cancer cell lines were reduced using RNA interference and the effects on sensitivity to UVC irradiation were determined.RESULTSFau and Bcl‐G mRNA levels were both lower in prostate cancer tissue than in normal prostate and Benign Prostate Hyperplasia. Active down‐regulation of Fau and Bcl‐G expression in vitro resulted in decreased sensitivity to UVC‐induced cytotoxicity. Simultaneous down‐regulation of Fau and Bcl‐G produced a decrease in sensitivity which was similar to either gene alone.CONCLUSIONSFau and Bcl‐G mRNA levels are both decreased in prostate cancer. In prostate cancer cell lines in vitro such down‐regulation results in reduced sensitivity to UVC‐induced cytotoxicity, consistent with the putative roles of these genes as candidate prostate tumor suppressors. The absence of an additive effect when Fau and Bcl‐G were down‐regulated simultaneously is consistent with the two genes acting in the same apoptosis pathway, for example, with the pro‐apoptotic effects of Fau being mediated through modulation of Bcl‐G. Prostate 70: 1513–1523, 2010. © 2010 Wiley‐Liss, Inc.
Comparing the folding free‐energy landscapes of Aβ42 variants with different aggregation properties
Authors: Mitternacht Simon , Staneva Iskra , Härd Torleif , Irbäck Anders 
Published: May 2010

AbstractThe properties of the amyloid‐β peptide that lead to aggregation associated with Alzheimer's disease are not fully understood. This study aims at identifying conformational differences among four variants of full‐length Aβ42 that are known to display very different aggregation properties. By extensive all‐atom Monte Carlo simulations, we find that a variety of β‐sheet structures with distinct turns are readily accessible for full‐length Aβ42. In the simulations, wild type (WT) Aβ42 preferentially populates two major classes of conformations, either extended with high β‐sheet content or more compact with lower β‐sheet content. The three mutations studied alter the balance between these classes. Strong mutational effects are observed in a region centered at residues 23–26, where WT Aβ42 tends to form a turn. The aggregation‐accelerating E22G mutation associated with early onset of Alzheimer's disease makes this turn region conformationally more diverse, whereas the aggregation‐decelerating F20E mutation has the reverse effect, and the E22G/I31E mutation reduces the turn population. Comparing results for the four Aβ42 variants, we identify specific conformational properties of residues 23–26 that might play a key role in aggregation. Proteins 2010. © 2010 Wiley‐Liss, Inc.
Interaction of the prion protein fragment PrP 185–206 with biological membranes: effect on membrane permeability
Authors: Sonkina Sabina , Tukhfatullina Ilnor I. , Benseny‐Cases Núria , Ionov Maksim , Bryszewska Maria , Salakhutdinov Bakhtiyar A. , Cladera Josep 
Published: May 2010

AbstractAmyloids are proteinaceous aggregates related to the so‐called conformational diseases, such as Alzheimer's and prion diseases. The cytotoxicity of amyloids may be related to the interaction of the amiloidogenic peptides or proteins with the cell membrane. In order to gain information on the physico‐chemical effects of amyloids on membranes, we have studied the interaction of the human prion amyloidogenic fragment PrP 185–206 with negatively charged model membranes. The results show that the peptide causes the destabilization of the membrane, making it permeable to potassium ions and to charged organic compounds. This effect correlates with the interaction of the peptide with the membrane, causing a variation in the magnitude of the electrostatic surface and dipole membrane potentials. This effect on the electrostatic properties of the membranes may help explaining the observed permeability: a neutralization of the surface negative charge and a decrease of the inside‐positive dipole potential would facilitate the translocation of positive ions. The structural analysis of the peptide in the presence of model membranes reveals that it adopts a predominantly unordered structure without any signs of amyloid formation. The results may be relevant in relation to the recently described cell toxic capacity of the peptide. Copyright © 2010 European Peptide Society and John Wiley & Sons, Ltd.
Total synthesis and stereochemical reassignment of tasiamide B
Authors: Sun Tiantian , Zhang Wei , Zong Chengli , Wang Peng , Li Yingxia 
Published: May 2010

AbstractThe first total synthesis of tasiamide B, an octapeptide bearing 4‐amino‐3‐hydroxy‐5‐phenylpentanoic acid unit isolated from the marine cyanobacteria Symploca sp. is described. A simple and efficient way was found to avoid the pyroglutamylation of Nα‐Me‐Gln and led to a reassignment of the Nα‐Me‐L‐Phe of tasiamide B to be Nα‐Me‐D‐Phe, which was also supported by 1D and 2D NMR. Copyright © 2010 European Peptide Society and John Wiley & Sons, Ltd.
Degradation mechanism of light‐emitting diodes on patterned sapphire substrate
Authors: Kim Sei‐Min , Moon Young‐Boo , Park Il‐Kyu , Jang Ja‐Soon 
Published: May 2010

AbstractWe have investigated possible degradation mechanism for patterned sapphire substrate (PSS)‐based blue light‐emitting diodes (LEDs) using an acceleration burn‐in test under high current stress. Normal LEDs without a PSS had also been compared. Measurements showed that the PSS‐LED has lower series resistance and higher output power compare to those of the normal LED. The acceleration test (@ 490 mA/cm2) results showed that the normal LED suffers from current crowding irrespective of acceleration time while the PSS LED endures up to 100 s. In addition, the estimated lifetime of the PSS‐LED is 1.6 times as high as that of the normal LED at high electrical stress of 490 A/cm2, indicating that the PSS‐LED shows excellent reliability characteristics. Based on electrical/optical measurement results, acceleration test data, and Auger depth profile results, possible degradation mechanism of the PSS‐LED will be discussed in terms of junction temperature (originating from Joule heating), carrier crowding, and p‐contact failure.
Structural characterization of thick (1122) GaN layers grown by HVPE on m‐plane sapphire
Authors: Usikov Alexander , Soukhoveev Vitali , Shapovalov Lisa , Syrkin Alexander , Ivantsov Vladimir , Scanlan Bernard , Nikiforov Alexey , Strittmatter Andre , Johnson Noble , Zheng Jian‐Guo , Spiberg Philippe , El‐Ghoroury Hussein 
Published: May 2010

AbstractThis paper reports structural characterization of thick $(11\bar {2}2)$‐oriented GaN layers by means of XRD, TEM, and micro‐ CL. The semi‐polar $(11\bar {2}2)$ GaN layers were grown on m‐plane sapphire substrates by HVPE. Their structural quality improved with thickness. Threading dislocation density of 3 × 108 cm−2 and stacking faults density of 4 × 104 cm−1 were measured at the surface of 20 µm thick $(11\bar {2}2)$ GaN layers. The semi‐polar GaN layers were used as template substrates to grow InGaN/GaN MQW heterostructures by MOCVD that demonstrated optically pumped lasing at 500 nm wavelength. The results demonstrate the longest wavelength yet reported for a photo‐pumped laser on template substrates.
Growth and characterization of GaN grown on moth‐eye patterned sapphire substrates
Authors: Ishihara Akihiro , Kawai Ryousuke , Kitano Thukasa , Suzuki Atushi , Kondo Toshiyuki , Iwaya Motoaki , Amano Hiroshi , Kamiyama Satoshi , Akasaki Isamu 
Published: May 2010

AbstractTo realize high‐efficiency light‐emitting diodes (LEDs), it is necessary to increase light extraction efficiency. Therefore, the introduction of a moth‐eye structure, which consists of periodic cones with a pitch of optical wavelength magnitude, into a sapphire surface before the epitaxial growth of nitride films is very promising for reducing the reflectivity of light resulting in high light extraction efficiency. 450 nm GaInN/GaN LEDs were fabricated on conventional and moth‐eye substrates by metal organic vapor phase epitaxy (MOVPE). The intensety of room‐temperature photoluminescence emitted from the LED with the moth‐eye‐patterned sapphire substrate was 1.6 times higher than that emitted from the LED without the moth‐eye substrate. Under a current injection of 50 mA, the output power of the moth‐eye LED is 3.6 times higher than that of the conventional LED. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Analysis of pulsed injection of precursors in AlN‐MOVPE growth by computational fluid simulation
Authors: Nakamura Kenichi , Hirako Akira , Ohkawa Kazuhiro 
Published: May 2010

AbstractWe report computational analysis of gas‐phase states and main reaction pathways under AlN metalorganic vapor‐phase epitaxy (MOVPE) by pulsed injection (PI) method of precursors. Interval times of 0–2 s were inserted between trimethylaluminum (Al(CH3); TMAl) and ammonia (NH3) supply phases to suppress parasitic reactions. In the cases of the interval time of 0 s, polymers and Al‐N molecules were dominant species due to parasitic reaction, and the growth species was Al‐N molecules generated by TMAl:NH3 pyrolysis. When an interval time was inserted between TMAl and NH3, mixing of TMAl and NH3 were suppressed. Al and NH2 generated from each precursor were dominant species. The main reaction pathway changed from TMAl:NH3 pyrolysis into TMAl pyrolysis with increasing the interval time. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
High drive current and high frequency response of GaN nanowire metal‐oxide‐semiconductor field‐effect transistor
Authors: Yu Jeng‐Wei , Wu Han‐Min , Peng Lung‐Han 
Published: May 2010

AbstractWe report the techniques of lateral epitaxial growth of horizontally aligned [11$ \bar 2 $0] GaN NWs and the photo‐enhanced chemical (PEC) oxidation process to enable the registration of crystalline gallium oxide (Ga2O3)/GaN NWs onto their growth sites over the SiO2/p‐Si substrates. This method allows the implementation of top‐gate Ga2O3/GaN NW‐metal oxide semiconductor field effect transistor (MOSFET) using the conventional optical lithography and the metal lift‐off procedures. This scheme enables photolithographic fabrication of top‐gate Ga2O3/GaN NW‐MOSFET of 60 nm dia. and 2 μm gate length. Device parameters with gm of 40 μS, saturation current of 90 μA, and cut‐off frequency fT at 22 GHz have been extracted (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Design and performance of 1.55 μm laser using InGaN
Authors: Hasan Md. Tanvir , Islam Md. Jahirul , Hasan Rajib‐ul‐ , Islam Md. Sherajul , Yeasmin Shahrina , Bhuiyan Ashraful G. , Islam Md Rafiqul , Yamamoto Akio 
Published: May 2010

AbstractThis paper describes the theoretical design and performance of a novel InGaN‐based 1.55 μm quantum well laser. A careful analysis of the optical and modal gain, threshold behavior, optical output, and efficiency with cavity length has been carried out. The spectral range of the optical material gain is found to be narrow and modal gain varies sharply with changing the reflectivity of the partially transparent mirror. It is found that a very small voltage of 1.10 V is required to reach the threshold current. A very small threshold current of 5.1 mA is required to emit the light. The calculated values of threshold current and threshold voltage are lower than the reported values of the conventional 1.55 μm laser. An efficiency of around 59% is found for a cavity length of 300 μm keeping the reflectivity at 35% of one mirror and 100% of other. The above study indicates that the proposed InGaN‐based 1.55 μm laser is very promising for the fabrication of future high performance laser (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p‐GaN gate
Authors: Sugiyama T. , Iida D. , Iwaya M. , Kamiyama S. , Amano H. , Akasaki I. 
Published: May 2010

AbstractThe threshold voltage (Vth) of normally off‐mode AlGaN/GaN junction heterostructure field‐effect transistors with a p‐type GaN gate can be successfully controlled by inserting a SiNx insulator between the p‐GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equivalent circuit model. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Valence band structure of III‐V nitride films characterized by hard X‐ray photoelectron spectroscopy
Authors: Sumiya M. , Lozach M. , Matsuki N. , Ito S. , Ohhashi N. , Sakoda K. , Yoshikawa H. , Ueda S. , Kobayashi K. 
Published: May 2010

AbstractThe valence band structure and core level of non‐doped GaN and Mg‐ (7x1018cm–3), Si‐ (6x1017cm–3) doped GaN films grown by metalorganic chemical vapor deposition were investigated by hard x‐ray photoelectron spectroscopy (HX‐PES). The surface Fermi level of non‐doped GaN film was pinned near midgap at 1.8 eV from the valence band maximum (VBM). From the angular dependence of HX‐PES, upward and downward surface band bending was observed for GaN:Mg and GaN:Si, while the surface Fermi level was located at 1.3 eV and 1.9 eV from the VBM, respectively. Following the built‐in potential evaluated from 1/C2‐V of the Schottky contact, the bulk Fermi of GaN:Si film was estimated to be 3.1 eV (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electronic properties of nonpolar cubic GaN MOS structures
Authors: As D. J. , Pöttgen H. , Tschumak E. , Lischka K. 
Published: May 2010

AbstractThe electric characteristics of non‐polar cubic gallium nitride (GaN) metal‐oxide‐semiconductor (MOS) capacitors were measured by capacitance (C‐V) and conductance (Gp/ω–F) techniques. From the hysteresis in the C‐V curve and the peak height of the Gp/ω – frequency curves a maximum interface state density Dit of ∼2x1013cm–2eV–1 is estimated. An interface trap band existing about 0.3 eV below the conduction band is measured in non‐polar cubic gallium nitride (GaN). (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The temperature dependence of the band edge energy in calcium barium niobate
Authors: Heine Urs , Betzler Klaus , Burianek Manfred , Mühlberg Manfred 
Published: May 2010

AbstractThe temperature dependent band edge energy of the novel tungsten bronze type calcium barium niobate (CBN) is measured over a temperature range from 80 K to 573 K. CBN has been under investigation for serveral years and is believed to be a promising material for future applications. Czochralski‐grown, colorless single crystals from the congruently melting composition with a calcium content of 0.281 were used. A numerical fit has been applied, comparing the results of CBN to those of the well known relaxor ferroelectric strontium barium niobate (SBN). The band edge energy of CBN was found to be higher than in SBN over the whole temperature range. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)