bluuebunny/crossref_metadata_2025_split huggingface dataset:
Specific and extensive endometrial deregulation is present before conception in IVF/ICSI repeated implantation failures (IF) or recurrent miscarriages
Authors: Lédée Nathalie , Munaut Carine , Aubert Julie , Sérazin Valérie , Rahmati Mona , Chaouat Gérard , Sandra Olivier , Foidart Jean Michel 
Published: June 2011

AbstractThe objective was to examine if IVF/ICSI repeated implantation failures (IF) or recurrent miscarriages (RM) could be related to preconceptional endometrial deregulations. IF was defined as the absence of pregnancy despite the transfer of at least ten IVF/ICSI good quality embryos, and RM as having at least three unexplained miscarriages. Fertile controls (FC) were women who had given birth at least once. Endometrial biopsy was performed in the mild luteal phase of a non‐conceptual cycle (five women were selected in each group). Affymetrix chips (GeneChip Human Genome U133 Plus2.0 Array) were used for hybridization. Data were normalized by the gcRMA method, and raw p values adjusted by the Bonferroni procedure (1%). Differential expression of selected genes was analysed using real‐time PCR. Gene networks and biological functions were explored using the Ingenuity Pathways Analysis software. Endometrial gene expression profiles at the time of uterine receptivity differ dramatically in the endometrium among FC, RM, and IF patients. Compared to FC, 2126 and 2477 genes are differentially expressed in IF and RM groups, respectively, and 2363 between IF and RM. In both conditions, differential gene expression referred mainly to DNA transcription and expression. Other main cellular functions deregulated in IF conditions correspond to cell morphology, cellular development, cell cycle, and cellular assembly, while in RM conditions, deregulated cellular functions relate to cell signalling (degradation of cyclic AMP and calcium metabolism) and cellular maintenance. In both conditions, there is an over‐representation of deregulations related to the haematological system. In the IF condition, cell‐mediated immune response and nervous system development and function are highly deregulated, while in RM patients, main deregulations are in organ and tissue development, humoral immune response, and muscular system development and function. Extensive endometrial deregulations are present before conception in patients who experienced IF or RM with both distinct and common deregulation. Copyright © 2011 Pathological Society of Great Britain and Ireland. Published by John Wiley & Sons, Ltd.
Three‐Dimensional Simulation of Pressure Fluctuation in a Granular Solid Propellant Chamber within an Ignition Stage
Authors: Miura Hiroaki , Matsuo Akiko , Nakamura Yuichi 
Published: June 2011

AbstractThe effects of the conditions of the ignition system in the propellant chamber of a gun system using a granular solid propellant are numerically investigated with respect to ignition performance criteria such as the differential pressure generation between the breech and the projectile base. Simulations, in which the length of the primer and the igniter mass are varied, are performed using a solid/gas two‐phase fluid dynamics code for three‐dimensional calculation of gas flow and discrete solid propellant particles. This code simulates the igniter combustion in the primer, the movement of burning solid propellant grains, and the formation of pressure gradients inside the chamber in the ignition process. The differential pressures between the breech and the projectile base measured in experiments are well predicted by the simulations for various igniter conditions. In the process of igniting the solid propellant, the propellant grains are accelerated toward the projectile base by the igniter gas flows from the primer vents. Fixed‐particle simulation is also carried out in order to examine the effects of the movement of the solid propellant grains on the chamber pressure profile. The simulated results reveal that the movement of solid propellant grains causes differential pressure fluctuations, which depend on the discharge from the primer vents and the locations of these vents.
Apo raver1 structure reveals distinct RRM domain orientations
Authors: Rangarajan Erumbi S. , Lee Jun Hyuck , Izard Tina 
Published: June 2011

AbstractRaver1 is a multifunctional protein that modulates both alternative splicing and focal adhesion assembly by binding to the nucleoplasmic splicing repressor polypyrimidine tract protein (PTB) or to the cytoskeletal proteins vinculin and α‐actinin. The amino‐terminal region of raver1 has three RNA recognition motif (RRM1, RRM2, and RRM3) domains, and RRM1 interacts with the vinculin tail (Vt) domain and vinculin mRNA. We previously determined the crystal structure of the raver1 RRM1–3 domains in complex with Vt at 2.75 Å resolution. Here, we report crystal structure of the unbound raver1 RRM1–3 domains at 2 Å resolution. The apo structure reveals that a bound sulfate ion disrupts an electrostatic interaction between the RRM1 and RRM2 domains, triggering a large relative domain movement of over 30°. Superposition with other RNA‐bound RRM structures places the sulfate ion near the superposed RNA phosphate group suggesting that this is the raver1 RNA binding site. While several single and some tandem RRM domain structures have been described, to the best of our knowledge, this is the second report of a three‐tandem RRM domain structure.
Nuclear magnetic resonance spectroscopy with the stringent substrate rhodanese bound to the single‐ring variant SR1 of the E. coli chaperonin GroEL
Authors: Koculi Eda , Horst Reto , Horwich Arthur L. , Wüthrich Kurt 
Published: June 2011

AbstractNuclear magnetic resonance (NMR) observation of the uniformly 2H,15N‐labeled stringent 33‐kDa substrate protein rhodanese in a productive complex with the uniformly 14N‐labeled 400 kDa single‐ring version of the E. coli chaperonin GroEL, SR1, was achieved with the use of transverse relaxation‐optimized spectroscopy, cross‐correlated relaxation‐induced polarization transfer, and cross‐correlated relaxation‐enhanced polarization transfer. To characterize the NMR‐observable parts of the bound rhodanese, coherence buildup rates by different magnetization transfer mechanisms were measured, and effects of covalent crosslinking of the rhodanese to the apical binding surface of SR1 were investigated. The results indicate that the NMR‐observable parts of the SR1‐bound rhodanese are involved in intracomplex rate processes, which are not related to binding and release of the substrate protein from the SR1 binding surface. Rather, they correspond to mobility of the stably bound substrate, which thus appears to include flexibly disordered polypeptide segments devoid of long‐lived secondary structures or tertiary folds, as was previously observed also with the smaller substrate human dihydrofolate reductase.
The N‐end rule pathway and regulation by proteolysis
Authors: Varshavsky Alexander 
Published: June 2011

AbstractThe N‐end rule relates the regulation of the in vivo half‐life of a protein to the identity of its N‐terminal residue. Degradation signals (degrons) that are targeted by the N‐end rule pathway include a set called N‐degrons. The main determinant of an N‐degron is a destabilizing N‐terminal residue of a protein. In eukaryotes, the N‐end rule pathway is a part of the ubiquitin system and consists of two branches, the Ac/N‐end rule and the Arg/N‐end rule pathways. The Ac/N‐end rule pathway targets proteins containing Nα‐terminally acetylated (Nt‐acetylated) residues. The Arg/N‐end rule pathway recognizes unacetylated N‐terminal residues and involves N‐terminal arginylation. Together, these branches target for degradation a majority of cellular proteins. For example, more than 80% of human proteins are cotranslationally Nt‐acetylated. Thus, most proteins harbor a specific degradation signal, termed AcN‐degron, from the moment of their birth. Specific N‐end rule pathways are also present in prokaryotes and in mitochondria. Enzymes that produce N‐degrons include methionine‐aminopeptidases, caspases, calpains, Nt‐acetylases, Nt‐amidases, arginyl‐transferases, and leucyl‐transferases. Regulated degradation of specific proteins by the N‐end rule pathway mediates a legion of physiological functions, including the sensing of heme, oxygen, and nitric oxide; selective elimination of misfolded proteins; the regulation of DNA repair, segregation, and condensation; the signaling by G proteins; the regulation of peptide import, fat metabolism, viral and bacterial infections, apoptosis, meiosis, spermatogenesis, neurogenesis, and cardiovascular development; and the functioning of adult organs, including the pancreas and the brain. Discovered 25 years ago, this pathway continues to be a fount of biological insights.
The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates
Authors: Badcock T. J. , Hao R. , Moram M. A. , Dawson P. , Kappers M. J. , Humphreys C. J. 
Published: June 2011

AbstractWe report on the optical properties of a series of non‐polar a‐plane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking faults. The peak energy of this emission red‐shifts and the emission line width increases significantly with increasing average indium content in the QWs and indium–alloyed basal‐plane stacking faults. Furthermore, the spectral sensitivity of the luminescence decay time weakens as the indium content of the sample increases. These effects are attributed to the increase in compositional and hence electronic disorder of higher indium content samples resulting in stronger carrier localisation, which suppresses relaxation within the band of localised states.
Study of thermoelectric properties of indium nitride nanowire
Authors: Huang Hung‐Hsun , Lu I‐Lin , Wu Yuh‐Renn 
Published: June 2011

AbstractIn this paper, we studied the thermoelectric properties of a free‐standing InN nanowire with wire size ranging from 6 to 100 nm. With elastic continuum model, we calculated the phonon dispersion curves to obtain the phonon group velocity. The Callaway model has been applied to obtain the temperature‐dependent thermal conductivity. We employed the Monte Carlo method to obtain the mobility and electrical conductivity with different doping concentration and temperature.Finally, the figures of merit ZT have been obtained by the combination of the electrical and thermal properties of InN nanowire. Our results suggest that the thermoelectric properties of InN nanowire are strongly influenced by the carrier density, temperature and nanowire size. The optimization condition for designing the thermoelectric device has been studied in this paper.
A Tersoff‐based interatomic potential for wurtzite AlN
Authors: Tungare Mihir , Shi Yunfeng , Tripathi Neeraj , Suvarna Puneet , Shahedipour‐Sandvik Fatemeh (Shadi) 
Published: June 2011

AbstractAluminum nitride (AlN) is a popular buffer layer and interlayer. The understanding of how AlN serves as a wetting and fracture‐mitigating layer relies on molecular pictures of the AlN layer and the interfaces. However, molecular dynamics (MD) simulation studies on AlN system, particularly on its wurtzite phase, have been limited. This is because most existing interatomic force fields of AlN target the less common zinc blende phase. Here, we report a new Tersoff‐based AlN force field for its wurtzite structure. This potential has been extensively tested in terms of lattice parameters, bulk modulus, cohesive energy, and heat capacity. In addition, thermal expansion coefficient (TEC) of wurtzite AlN, a key property to precisely model heterostructures, has been calculated using MD method. The value of 2.66 × 10−6 K−1 calculated at 300 K for TEC is in excellent agreement with the reported experimental value.
Comparing study of magnetic‐ion and nonmagnetic‐ion doping effect at Mn site in La0.825Sr0.175MnO3 compound
Authors: Hao Changyi , Zhao Bangchuan , Kuang Guangli , Sun Yuping 
Published: June 2011

AbstractStructural, magnetic, and transport properties of La0.825Sr0.175MnO3 samples doped with magnetic (Fe3+, Cr3+) and nonmagnetic (Ga3+, Al3+) ions have been studied comparatively. The structure does not change by nonmagnetic ion doping, whereas magnetic ion substitution can change the structure of the system significantly. All the doped samples show a lower Curie temperature as compared to that of the undoped sample. The change of Curie temperature TC for the magnetic‐ion‐doped samples is quite larger than that of the nonmagnetic‐ion‐doped samples. The electron configuration is suggested to play an important role in determining the change of TC for the magnetic‐ion‐doped samples, whereas the decrease of TC in nonmagnetic‐doped samples is considered to originate mainly from the variation of local lattice. The Fe‐doped sample shows semiconducting transport behavior in the whole studied temperature range besides a kink near TC. Except for two obvious M–I transitions, another inflexion‐like anomaly in the ρ(T) curve at low temperatures is observed for the Ga‐, Cr‐, and Al‐doped samples and the inflexion is suggested to be related to a two transport channel model in these samples.
Emerging physics of oxide heterostructures
Authors: Demkov A. A. , Posadas A. , Seo H. , Lee J. K. , Sai N. 
Published: June 2011

AbstractWe explore novel electronic phenomena that occur at the interface in epitaxial complex oxide heterostructures. We apply ab‐initio theory to predict and analyze the behavior of these heterostructures and use molecular beam epitaxy (MBE) to realize them in practice. Our first system concerns the interface between two insulating oxides, LaAlO3/SrTiO3 and LaAlO3/EuO. Formation of a two‐dimensional electron gas is explored and the electrostatic doping mechanism as a result of the macroscopic electric fields in LaAlO3 is proposed. In the second system, we investigate the possibility of magnetoelectric coupling at a tri‐components ferroelectric/ferromagnetic interface using a Pt/PbTiO3/Fe heterostructure as an example. At last we explore the connection between epitaxial strain and interfacial ferromagnetism in SrTiO3/LaCoO3 interface and demonstrate that such structure can be integrated epitaxially with Si (001).
Effect of basal‐plane stacking faults on the Bragg peak broadening in m‐plane GaN
Authors: Paduano Qing S. , Drehman Alvin J. , Weyburne David W. 
Published: June 2011

AbstractThe effect of basal‐plane stacking faults on the Bragg peak broadening in m‐plane GaN is studied using X‐ray diffraction ω‐scans and ω/2θ‐scans. The analysis considers the coexistence of multiple broadening contributions including tilt, twist, limited coherence length, and micro‐strain. Although the effects of basal‐plane stacking faults are detectable in the different configurations used in this study, we show that the ω‐scans in the asymmetric geometry are better suited for quantifying basal‐plane stacking fault‐related broadening, since the broadening due to twist does not affect the ω‐scan profiles in such diffraction geometries (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Transparent electrode for UV light‐emitting‐diodes
Authors: Takehara Kosuke , Takeda Kenichiro , Nagata Kengo , Sakurai Hisashi , Ito Shun , Iwaya Motoaki , Takeuchi Tetsuya , Kamiyama Satoshi , Akasaki Isamu , Amano Hiroshi 
Published: June 2011

AbstractWe have investigated the transparent electrodes using indium tin oxide (ITO) for UV light‐emitting diodes (LEDs). The carrier concentration of ITO was increased from 1.1×1018 to 1.5×1021cm‐3 after annealing under N2 ambient at 600 °C. The fundamental absorption edge was also shifted to a shorter wavelength owing to the increase in carrier concentration, through the so‐called the Burstein‐Moss effect. The annealed ITO forms an ohmic contact with p‐GaN with a specific contact resistance of 1.2×10‐3Ωcm2. The light output power of a 350 nm LED with the annealed ITO contact is 1.2 times higher than that with a conventional Ni/Au contact. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
GaInN‐based solar cells using GaInN/GaInN superlattices
Authors: Fujii Takahiro , Kuwahara Yousuke , Iida Daisuke , Fujiyama Yasuharu , Morita Yoshiki , Sugiyama Toru , Isobe Yasuhiro , Iwaya Motoaki , Takeuchi Tetsuya , Kamiyama Satoshi , Akasaki Isamu , Amano Hiroshi 
Published: June 2011

AbstractWe report on the fabrication of GaInN‐based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit‐free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the maximum external and internal quantum efficiencies reached 60%, and 88%, respectively. The open‐circuit voltage of the soalr cells was 1.77 V, the short‐circuit current density was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temperature under simulared 1.5 sun × AM1.5G illumination using a solar simulator. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs
Authors: Brunner Frank , Bahat‐Treidel Eldad , Cho Melanie , Netzel Carsten , Hilt Oliver , Würfl Joachim , Weyers Markus 
Published: June 2011

AbstractA comparison of different epilayer concepts to achieve high breakdown voltage AlGaN‐GaN HFETs is presented. A double heterostructure with a low Al‐content Al0.05Ga0.95N back‐barrier as well as a carbon‐doped GaN buffer are investigated with regard to material and device properties. Material analysis reaffirms the incorporation of carbon on a nitrogen lattice site without creation of extended defects or causing memory effects. It is demonstrated that carrier trapping in the buffer using carbon deep acceptors reduces sub‐threshold drain leakage currents in HFET devices enabling breakdown voltages above 1 kV. An undoped GaN channel layer is shown to suppress drain current reduction under pulsed transistor operation. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
Authors: Wang Yaqi , Xu Hui , Alur Siddharth , Sharma Yogesh , Tong Fei , Gartland Patrick , Issacs‐Smith Tamara , Ahyi Claude , Williams John , Park Minseo , Wheeler Ginger , Johnson Mark , Allerman Andrew A. , Hanser Andrew , Paskova Tanya , Preble Edward A. , Evans Keith R. 
Published: June 2011

AbstractVertical Schottky rectifiers were fabricated on two GaN wafers synthesised by hydride vapor phase epitaxy (HVPE) process: n‐ epilayer on n+ bulk and n‐ bulk. Full backside ohmic contact and circular Schottky contacts were deposited on the N face and Ga face of the substrate, respectively. The devices showed excellent electrical characteristics. The device fabricated on n‐ epilayer on n+ bulk substrate showed a breakdown voltage of 348 V, a specific on‐state resistance of 4.2 mΩ·cm2 and a leakage current density of 9.2×10‐6 A/cm2 at ‐90 V. The device fabricated on n‐ bulk substrate showed a breakdown voltage of 600 V, a specific on‐state resistance of 1.3 mΩ·cm2 and a leakage current density of 8.1×10‐8 A/cm2 at ‐100 V. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
DNA hybridization sensor based on AlGaN/GaN HEMT
Authors: Alur Siddharth , Thapa Resham , Gnaprakasa Tony , Wang Yaqi , Sharma Yogesh , Javalosa Edritz , Smith Elizabeth , Ahyi Claude , Simonian Aleksandr , Bozack Michael , Williams John , Park Minseo 
Published: June 2011

AbstractAlGaN/GaN based heterostructures are used to fabricate high electron mobility transistors for the purpose of a DNA hybridization sensor. Photodefinable PDMS is used to encapsulate the entire device except the gold sputtered gate area. The gold coated gate contacts are functionalized with thiolated ssDNA. The fabricated device is used to detect DNA hybridization of Salmonella DNA of two different concentrations of 1 μM and 4 μM. There is a higher drop in drain current when a higher DNA concentration is used. The device is also checked for reusability, thereby confirming the stability of the device and the encapsulation. The measurements are carried out at zero gate bias. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Modeling and experimental study of MOS channel mobility of etched GaN on silicon substrate
Authors: Li Zhongda , Naik Harsh , Chow T. Paul 
Published: June 2011

AbstractWe report on the experimental results of the MOS field‐effect and Hall mobilities measured on etched surface of GaN grown on silicon substrate. The peak MOS Hall mobility was extracted to be 23 cm2/V‐s, and the Hall mobility was then modelled using physics‐based model. The effects of Columbic scattering, phonon scattering, and surface roughness were evaluated, and the limiting factor of the GaN MOS mobility was identified as Columbic scattering caused by the combination of high interface charges and traps at the GaN MOS interface. The GaN MOS surface roughness extracted from the modelling was comparable to silicon MOS interface. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Control of AlN buffer/sapphire substrate interface for AlN growth
Authors: Miyagawa Reina , Yang Shibo , Miyake Hideto , Hiramatsu Kazumasa 
Published: June 2011

AbstractThe growth condition of AlN buffer layer has been studied in order to fabricate a high‐quality AlN layer on a sapphire substrate. The growth of high‐quality AlN is extremely difficult due to the weak surface migration of Al adatoms. Therefore we have focused on the AlN buffer layer, and examined the growth condition while controlling the thickness and growth temperature. The crystalline quality of the AlN layer grown on an AlN buffer layer at a growth temperature of 1250 °C was improved, and the full width at half‐maximum (FWHM) value of the X‐ray rocking curve (XRC) obtained for (0002) and (10‐10) diffractions were 138 and 464 arcsec, respectively. Moreover, AlOxN1‐x was formed when the AlN buffer layer was grown at a high temperature (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The role of mesa size in nano‐structured green AlGaInN light‐emitting diodes
Authors: Stark Christoph J. M. , Detchprohm Theeradetch , Wetzel Christian 
Published: June 2011

AbstractThe mesa width of green light‐emitting diodes (LEDs) was scaled from the micrometer to the nanometer range. The devices were patterned by electron beam lithography and dry etching and contained up to 100 parallel nano‐stripe LEDs connected to one common contact area. The mesa width was varied over 1 µm, 200 nm, and 50 nm. The LEDs were characterized electrically and optically, and the peak emission wavelength was found to depend on the lateral structure size. Light emission from the patterned region was found to be 4 times brighter than from the un‐patterned regions. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)