bluuebunny/crossref_metadata_2025_split huggingface dataset:
Photonic Crystal Back Reflector in Thin-film Silicon Solar Cells
Authors: Isabella Olindo , Lipovšek Benjamin , Krč Janez , Zeman Miro 
Published: June 2009

AbstractOne-dimensional photonic crystals having desired broad region of high reflectance (R) were fabricated by alternating the deposition of amorphous silicon and amorphous silicon nitride layers. The effect of the deposition temperature and angle of incidence on the optical properties of photonic crystals deposited on glass substrate was determined and an excellent matching was found with the simulated results. The broad region of high R of photonic crystals deposited on flat and textured ZnO:Al substrates decreases when compared to the R of photonic crystals de-posited on glass. The performance of amorphous silicon solar cells with 1-D photonic crystals integrated as the back reflector was evaluated. The external quantum efficiency measurement demonstrated that the solar cells with the photonic crystals back reflector had an enhanced re-sponse in the long wavelength region (above 550 nm) compared to the cells with the Ag reflector.
Modeling the Grain Size Distribution during Solid Phase Crystallization of Silicon
Authors: Bill Andreas , Teran Anthony V , Bergmann Ralf B 
Published: June 2009

AbstractWe analyze the grain size distribution during solid phase crystallization of Silicon thin films. We use a model developed recently that offers analytical expressions for the time-evolution of the grain size distribution during crystallization of a d-dimensional solid. Contrary to the usual fit of the experimental results with a lognormal distribution, the theory describes the data from basic physical principles such as nucleation and growth processes. The theory allows for a good description of the grain size distribution except for early stages of crystallization. The latter case is expected and discussed. An important outcome of the model is that the distribution at full crystallization is determined by the time-dependence of the nucleation and growth rates of grains. In the case under consideration, the theory leads to an analytical expression that has the form of a lognormal-type distribution for the fully crystallized sample.
Low-temperature Fabrication of a Crystallized Si Film Deposited on a Glass Substrate using an Yttria-stabilized Zirconia Seed Layer
Authors: Herman Sukreen Hana , Horita Susumu 
Published: June 2009

AbstractWe have been investigating fabrication of a crystallized Si (c-Si) film deposited on a glass substrate at low temperature, using a poly-yttria-stabilized zirconia (poly-YSZ) film as a seed layer. It can be expected that the crystallographic information of the YSZ layer transmits to the deposited Si film so that it stimulates its crystallization even at lower temperature. To reduce the crystallization temperature further, we focused on the surface treatment of the YSZ layer, in which it was dipped in the HF solution, followed by rinsing with deionized water (DIW) or with ethanol.After depositing the poly-YSZ layer by reactive magnetron sputtering on the quartz glass substrate, the Si film was deposited directly on it by e-beam vacuum evaporation in <10-6 Pa. The Raman spectra of the Si films deposited at 430 °C on the ethanol-rinsed glass without YSZ layer and on the DIW-rinsed YSZ layer showed amorphous phase. However, on the ethanol-rinsed YSZ layer, they showed a strong peak of c-Si of the deposited film, even at 350 °C, and indicated the beginning of the crystallization at 320 °C. This means that the YSZ layer enhanced the Si film crystallization, and that the ethanol-rinse was effective for low-temperature crystallization. The crystalline fraction of the Si film varied with the yttria content and the surface treatment of the YSZ layer prior to the Si film deposition. From the XPS results, we found out that fluorine F were adsorbed on the surface and were bonded with the Y. The Y 3d and F 1s peaks observed from the ethanol-rinsed YSZ were higher than those of the DIW rinse, which suggests that the Y and adsorbed F on the surface were removed by the DIW rinse, but remained even after the ethanol rinse. Based on the Raman and XPS results, we can speculate that the excessive amount of F on the YSZ layer surface prior to the Si film deposition play an important role on the Si film crystallization. We observed the surface of the Secco-etched Si/YSZ films deposited at 320, 350, and 430 °C by SEM. The number of crystallized Si grains was denser at higher temperature than that of lower temperature. That is, the Si film deposited at 430 °C was crystallized thoroughly on the whole substrate, but some regions of the Si films deposited at 350 and 320 °Cwere amorphous and removed by the Secco etching. The grain sizes were in the range from 20 to 40 nm, and the size at the lower deposition temperature was more uniform than the higher temperature. From SIMS observation, it was found that Zr atoms diffuse from the interface with the YSZ layer.
Observation of the Evolution of Etch Features on Polycrystalline ZnO:Al Thin-Films
Authors: Owen Jorj Ian , Hüpkes Jürgen , Bunte Eerke 
Published: June 2009

AbstractThe transparent conducting oxide (TCO) ZnO:Al is often used as the window layer and a source of light trapping in thin-film silicon solar cells. Light scattering in sputtered zinc oxide is achieved by wet chemical etching, which results in craters distributed randomly over the ZnO surface. To gain a better understanding of the etching process on ZnO thin films, a method for atomic force microscope (AFM) realignment between etching steps is developed. Using this method, the evolution of the HCl etch on a polycrystalline ZnO thin-film is observed. Results showed that this observation method did not modify the etching behavior, nor did stopping and restarting the etching change the points of attack, indicating that the points of HCl attack are built into the films as they are grown. Additionally, we investigated the evolution of the HCl etch on a ZnO surface previously etched in KOH, and found that the etch sites for both the acidic and basic solution are identical. We conclude that “peculiar” defects, which induce accelerated etching, are built into the film during growth, and that these defects can extend part or all the way though the thin-film in a similar way as screw dislocations in single crystalline ZnO.
In-Situ Observation of High Deposition Rate Hydrogenated Polymorphous Silicon Cell Degradation through Variable Intensity Method Measurements
Authors: Johnson Erik V , Kim Ka-Hyun , Roca i Cabarrocas Pere 
Published: June 2009

AbstractThe efficiencies of hydrogenated polymorphous silicon (pm-Si:H) solar cells have been previously demonstrated to show superior stability under light-soaking. This stability arises due to the fact that the decrease they show in fill factor (FF) is partially offset by an accompanying increase in open circuit voltage (VOC). Recently, high-deposition rate (9Å/s) pm-Si:H material deposited by standard RF-PECVD at 13.56MHz has been investigated as the intrinsic layer in photovoltaic modules as it has shown excellent electronic properties. The degradation behaviour of these high-deposition rate cells, however, differs significantly from that of lower deposition rate material. In particular, no beneficial increase in Voc is observed during light soaking. We investigate the degradation dynamics of solar cells made from this high growth rate material using a Variable Illumination Method (VIM) during light soaking to quantify the changes to these high-rate cells during light-soaking and directly contrast them with those of low-rate (1.5Å/s) cells. In particular, we discuss the importance of bulk recombination effects vs interface quality changes, as well as the dynamics of changes in VOC.
Low Temperature Si Homoepitaxy by a Reactive CVD with a SiH4/F2 Mixture
Authors: Minowa Akihisa , Kondo Michio 
Published: June 2009

AbstractSingle crystalline Si thin films on insulating substrates (SOI) have a variety of potential applications to such as high mobility TFT and to high efficiency and low cost solar cells. Since the SOI is limited to a thin layer, it is needed to develop a low temperature epitaxial growth technology to form active layers thicker than several micorns at low temperatures. The purpose of this study is to develop a deposition technique of single crystalline Si thin films by a reactive CVD method [1] at temperatures less than 600○C utilizing gas-phase reaction (SiH4, F2).
Deposition of Si films was performed on a single crystalline Si (100) wafer.
Substrate-temperature was varied between 100 and 700○C, reaction-pressure 1 and 500mTorr, flow-rate between SiH4/F2 = 1/1 and 1/3, and the geometry of the substrate and the gas-outlet were optimized.
First, it was found that deposition rate was sensitive to the distance between the
gas-outlet and the substrate and to the total pressure. For four different combinations of pressures, 250 and 500 mTorr and distances, 50 and 150 mm. The deposition took place only for the combination of 500 mTorr and 50 mm, and otherwise the deposition rate was significantly lower or etching of Si wafer was observed. The deposition rate for gas flow ratio, SiH4/F2 of 1/1 was 1.7 nm/s at a substrate-temperature of 400○C, while for higher F2 flow rate ratio, SiH4/F2 = 1/2 and 1/3, the deposition rates were 8.3×10-3 nm/s and etching, respectively.
Raman measurements show that crystallinity depends on the substrate-temperature; broad amorphous signal appears at 300, microcrystalline signal at 300 and 500○C and sharp crystalline at 400○C. RHEED observation shows a halo-pattern of amorphous-Si at 200○C, a mixed pattern of streak and spot without 2×1 superstructure at 300○C, a 2×1 streak-pattern at 400○C and a spot-pattern at 500○C. The reason of the narrow temperature window for epitaxial layer is a characteristic feature of low temperature epitaxy as reported before [2]. It is noteworthy the deposition rate of epitaxy obtained in this work is quite high, 1.7 nm/s even at 400○C.
These observations are ascribed to the gas phase reaction between SiH4 and F2 and successive surface reactions. The SiH4 and F2 cause an exothermic reaction in the gaseous phases to generate radicals such as SiHx, H and F. The SiHx acts as a film precursor and others act as etchant. Under the conditions which radical density ratio SiHx/F increases, therefore, the deposition rate decreases or etching occurs. The material properties also will be discussed in relation to the growth mechanism.
[1]J. Hanna et al., J. Non-Crst. Solids 114 (1989) 172-174
[2]T. Kitagawa, M. Kondo et al, Appl. Surf. Sci. 159-160 (2000) 30-34
Device Physics of Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells
Authors: Kanevce Ana , Metzger Wyatt K. 
Published: June 2009

AbstractHeterojunction with intrinsic thin layer (HIT) solar cells have achieved conversion efficiencies higher than 22%. Yet, many questions concerning the device physics governing these cells remain unanswered. We use numerical modeling to analyze the role of a-Si:H layers and tunneling on cell performance. For cells with n-type c-Si (n-HIT cells), incorporating the indium-tin-oxide (ITO) as an n-type semiconductor creates an n+/p/n structure. Most device simulations do not work with this structure. Our modeling indicates that the n+/p/n device often produces irregular S-shaped current density–voltage (J-V) curves, which have been observed experimentally but were not previously understood. However, if tunneling is included, there are specific conditions where the n+/p/n structure performs as a robust solar cell with efficiencies exceeding 20%. Additional analysis examines voltage-dependent carrier collection in n-HIT cells, as well as material and interface properties that limit fill factor.
In p-HIT cells, modeling the ITO layer as a semiconductor, rather than as a metallic contact, significantly reduces the impact of a-Si:H layer parameters on device performance. In p-HIT cells, the a-Si:H layers adjacent to the ITO layer play the role of a buffer that reduces interface recombination at the a-Si:H/c-Si interface and prevents tunneling of electrons from the ITO layer to the c-Si absorber. Tunneling through the a-Si:H layers adjacent to the back contact is important to attain regular J-V curves.
High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser
Authors: Baiano Alessandro , Ishihara Ryoichi , Beenakker Kees 
Published: June 2009

AbstractIn this paper we investigate the carriers mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors (SG-TFTs) by μ-Czochralski process at low-temperature process (< 350 °C). The high laser energy density nearby the ablation phenomenon that completely melts the silicon layer during the crystallization is responsible for high tensile strain and good crystal quality of the silicon grains, which lead carriers mobility enhancement.
Raman Characterization of Protocrystalline Silicon Films
Authors: Syllaios A. J. , Ajmera S. K. , Tyber G. S. , Littler C. L. , Hollingworth R. E. 
Published: June 2009

AbstractAn increasingly important application of thin film hydrogenated amorphous silicon (α-Si:H) is in infrared detection for microbolometer thermal imaging arrays. Such arrays consist of thin α-Si:H films that are integrated into a floating thermally isolated membrane structure. Among the α-Si:H material properties affecting the design and performance of microbolometers is the microstructure. In this work, Raman spectroscopy is used to study changes in the microstructure of protocrystalline p-type α-Si:H films grown by PECVD as substrate temperature, dopant concentration, and hydrogen dilution are varied. The films exhibit the four Raman spectral peaks corresponding to the TO, LO, LA, and TA modes. It is found that the TO Raman peak becomes increasingly well defined (decreasing line width and increasing intensity), and shifts towards the crystalline TO energy as substrate temperature is increased, H dilution of the reactants is increased, or as dopant concentration is decreased.
Structural Properties of a-Si:H Films with Improved Stability against Light Induced Degradation
Authors: van Elzakker Gijs , Ŝutta Pavel , Zeman Miro 
Published: June 2009

AbstractX-ray diffraction (XRD) analysis of thin silicon films was carried out using both the symmetric Bragg-Brentano and asymmetric thin-film attachment geometries. The asymmetric configuration allows quantitative phase analysis of the films and reveals that amorphous silicon films deposited from silane diluted with hydrogen have the strongest peak in the XRD patterns located around 27.5 degrees. This peak corresponds to the signal from ordered domains of tetragonal silicon hydride and not from cubic silicon crystallites. The full width at half maximum (FWHM) of this peak narrows from 5.1 to 4.8 degrees as the ratio of hydrogen to silane flow (R) increases to 20 and does not change significantly for higher hydrogen dilutions. The amorphous silicon films fabricated at different hydrogen dilution were applied as absorber layers in single-junction solar cells. Degradation experiments confirm a substantial reduction of the degradation when the dilution ratio is increased from R=0 to R=20. The light induced degradation of solar cells with absorber layers prepared at R > 20 is not further reduced by increasing R.
Fine Tuning of the Spectral Sensitivity in a-SiC:H Stacked p-i'i-n Graded Cells
Authors: Fantoni Alessandro , Fernandes Miguel , Louro Paula , Lavareda Guilherme , Carvalho Carlos N , Vieira Manuela 
Published: June 2009

AbstractIt is presented in this work a p(a-SiC:H)/i(a-SiC:H)/i((a-Si:H)/ n(a-Si:H) single junction for application in color sensing domain produced with the PECVD technique. The interest of this device resides in its simplicity of realization and utilization, as it takes advantage from the well known properties of the a-Si:H p-i-n junctions together with the possibility of color filtering by tailoring the optical gap of a-Si:H with the introduction of a small percentage of Carbon. The thicknesses of the i(200 nm) and i (1000 nm) layers are optimized for light absorption in the blue and red ranges, respectively. Measurements of the spectral response under forward and reverse polarization show a dependence of the wavelength of the maximum absorption on the intensity of the applied bias. A comparison of the photocurrent reading with and without a 650 nm background DC optical bias permits a complete separation of blue and red color under reverse and forward applied bias, respectively. The application of the LSP technique (AC regime of the optical bias) permits a complete RGB reading of the incoming light.
Simulation results obtained with the program ASCA will support and explain the measurements about spectral response and photocurrent reading under DC and AC regimes.
Laser-Induced Crystallization of SiGe MEMS Structural Layers Deposited at Temperatures Below 250°C
Authors: El-Rifai Joumana , Sedky Sherif , Wasfi Rami , Van Hoof Chris , Witvrouw Ann 
Published: June 2009

AbstractThis work is a step towards a viable process for poly-SiGe MEMS structural layers deposited at substrate temperatures below 250°C. Laser annealing was used for post-deposition layer treatment to realize poly-SiGe structural layers with the desired electrical and mechanical properties at low substrate temperatures. The technique uses a pulsed excimer laser beam for the local thermal treatment of a SiGe layer deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 210°C. By tuning the laser treatment and the film deposition conditions, 1-1.8 μm thick films having an electrical resistivity as low as 14.1 mΩ∙cm and optimal strain gradient in the range of -4.3×10-6to +6.8×10-6μm-1were realized.
The effect of active-layer thickness on the characteristic of nanocrystalline silicon thin film transistor
Authors: Kim Sun-Jae , Han Sang-Myeon , Kuk Seung-Hee , Lee Jeong-Soo , Han Min-Koo 
Published: June 2009

AbstractWe fabricated nc-Si TFTs in order to investigate the effect of the active-layer thickness on the characteristic of the nc-Si TFT. Bottom gate nc-Si TFTs were fabricated at 350°C using ICP-CVD. The thicknesses of the nc-Si layer were remained to 700, 1200 and 1700 Å. As the active-layer thickness increases, the mobility and the on-current level were not altered. However, the off-current level increased considerably and on/off ratio decreased. It may be attributed to highly doped characteristic of thick nc-Si film. As the nc-Si film thicker, the conductivity increases considerably and the Fermi level approaches to the conduction band minimum, which indicates the increases of doping level. The oxygen concentration shows high level of unintentional doping. Also, columnar growth of nc-Si film makes that the crystallinity of top region is much higher than that of bottom region. So, the conductivity of thick nc-Si film becomes high compared to that of thin nc-Si film. The structure of the nc-Si TFT with thick nc-Si film can be similar to the serial connection of N+, N- and N+ resistance, so that it suffers difficulty to suppress the off current and to secure high on/off ratio. Therefore, the off current can be suppressed by thinning of the high conducting active nc-Si layer and nc-Si TFT with channel thickness of 700 Å shows good on/off characteristic. It is deduced that bottom gate nc-Si TFT is necessary to have intrinsic channel layer as well as thin channel layer to reduce the leakage current.
1H NMR Study Of Hydrogenated Nanocrystalline Silicon Thin Films
Authors: Kiriluk Kristin G. , Bobela David C. , Su Tining , Yan Baojie , Yang Jeff , Guha Subhendu , Reyes Arneyl , Kuhns Philip , Taylor Craig 
Published: June 2009

AbstractHydrogenated nano-crystalline silicon (nc-Si:H) is a promising material for multi-junction solar cells. We investigated the local hydrogen environments in nano-crystalline silicon thin films by nuclear-magnetic-resonance (NMR). At room temperature, 1H NMR spectra have broader components than those observed in standard device grade hydrogenated amorphous silicon (a-Si:H). As the temperature decreases, the 1H NMR exhibits a broadening of the line shape attributed to hydrogen atoms at the interfaces between the amorphous silicon (a-Si) and the crystalline silicon (c-Si) regions. These results suggest that the local hydrogen structure in nc-Si:H is very different from that in a-Si:H. In particular, the hydrogen clusters contributing to broadened spectra may exist on the surfaces of the a-Si/c-Si interfaces which do not exist in the more dense matrix of a-Si:H and may contribute to certain unique optoelectronic properties of these nc-Si:H thin films. The dependence of the spin-lattice relaxation time (T1) on temperature, however, is very similar to that in a-Si:H, which indicates the spin-lattice relaxation mechanism, i.e via spin diffusion through molecular hydrogen, is common to both systems.
Near Infrared Fluorescent and Phosphorescent Organic Light-Emitting Devices
Authors: Yang Yixing , Farley Richard , Steckler Timothy , Sommer Jonathan , Eom Sang Hyun , Graham Kenneth , Reynolds John , Schanze Kirk , Xue Jiangeng 
Published: June 2009

AbstractOrganic light-emitting devices (OLEDs) emitting near-infrared (NIR) light have many potential applications, yet the efficiency of these devices remains very low, typically ˜0.1% or less. Here we report efficiency NIR OLEDs based on two fluorescent donor-acceptor-donor oligomers and a phosphorescent Pt-containing organometallic complex. External quantum efficiencies in the range of 0.5–3.8% with emission peak ranging from 700 to 890 nm have been achieved.
Spin Transport and Magneto-Resistance in Organic Semiconductors
Authors: Yunus Mohammad , Ruden P. P. , Smith Darryl L. 
Published: June 2009

AbstractCalculated results for spin injection, transport, and magneto-resistance (MR) in organic semiconductors sandwiched between two ferromagnetic contacts are presented. The carrier transport is modeled by spin dependent device equations in drift-diffusion approximation. In agreement with earlier results, spin injection from ferromagnetic contacts into organic semiconductors can be greatly enhanced if (spin-selective) tunneling is the limiting process for carrier injection. Modeling the tunnel processes with linear contact resistances yields spin currents and MR that tend to increase with increasing bias. We also explore the possibility of bias dependent contact resistances and show that this effect may limit MR to low bias.
Reliability of nc-ZnO Embedded ZrHfO High-kNonvolatile Memory Devices Stressed at High Temperatures
Authors: Yang Chia-Han , Kuo Yue , Lin Chen-Han , Kuo Way 
Published: June 2009

AbstractThe nanocrystalline ZnO embedded Zr-doped HfO2high-kdielectric has been made into MOS capacitors for nonvolatile memory studies. The device shows a large charge storage density, a large memory window, and a long charge retention time. In this paper, authors investigated the temperature effect on the reliability of this kind of device in the range of 25°C to 175°C. In addition to the trap-assisted conduction, the memory window and the breakdown strength decreased with the increase of the temperature. The high-k film's conductivity increased and the nc-ZnO's charge retention capability decreased with the increase of temperature. The nc-ZnO retained the trapped charges even after the high-k film broke down and eventually lost the charges at a higher voltage. The difference between these two voltages decreased with the increase of the temperature.