bluuebunny/crossref_metadata_2025_split huggingface dataset:
Cysteine proteinase inhibitor Act d 4 is a functional allergen contributing to the clinical symptoms of kiwifruit allergy
Authors: Popovic Milica M. , Milovanovic Mina , Burazer Lidija , Vuckovic Olga , Hoffmann‐Sommergruber Karin , Knulst Andre C. , Lindner Buko , Petersen Arnd , Jankov Ratko , Gavrovic‐Jankulovic Marija 
Published: November 2009

AbstractKiwifruit has become a frequent cause of fruit allergy in the recent years. The molecular basis of type I hypersensitivity to kiwifruit is attributed to 11 IUIS allergens, with Act d 1, Act d 2 and Act d 5 characterized in extenso. Evaluation of the allergenic properties of Act d 4, a cysteine proteinase inhibitor from green kiwifruit (Actinidia deliciosa) was performed in this study. Identity of the purified glycoprotein was determined by Edman degradation and by mass fingerprint whereby more than 90% of the primary structure of the mature kiwifruit cystatin was confirmed. Using MALDI TOF analysis, molecular masses of 10902.5 and 11055.2 Da were detected for Act d 4, respectively. Positive skin prick reactivity with Act d 4 was induced in three kiwifruit allergic patients, as well as the upregulation of CD63 and CD203c molecules in the basophile activation assay. The IgE reactivity was detected in dot blot analysis while Western blot analysis was negative using sera from six kiwifruit patients, suggesting the presence of conformational IgE epitopes on the Act d 4 molecule. As activator of effector cells in type I hypersensitivity Act d 4 is a functional allergen contributing to the clinical symptoms of kiwifruit allergy.
Blueberry fruit polyphenolics suppress oxidative stress‐induced skeletal muscle cell damage in vitro
Authors: Hurst Roger D. , Wells Robyn W. , Hurst Suzanne M. , McGhie Tony K. , Cooney Janine M. , Jensen Dwayne J. 
Published: November 2009

AbstractSkeletal muscle damage can result from disease and unaccustomed or excessive exercise. Muscle dysfunction occurs via an increased level of reactive oxygen species and hence there is potential in antioxidants as amelioration strategies. We explored the putative benefit of fruit polyphenolic extracts in reducing the susceptibility of skeletal muscle cells to oxidative stress. Muscle myotubes were simultaneously challenged with fruit extracts (1–50 μg/mL) and calcium ionophore (A23187), hydrogen peroxide, or 2,4‐dinitrophenol and damage monitored by release of cytosolic enzymes. A blueberry fruit extract displayed a potent and significant dose‐dependant protective capacity. Evaluation of the protective capacity of anthocyanin sub‐extracts of blueberry fruit and pure individual glycosides, with identification of extract polyphenolic components using MS, suggested that malvidin galactoside and/or glucoside were the active compounds. These in vitro data support the concept that blueberry fruits or derived foods rich in malvidin glycosides may be beneficial in alleviating muscle damage caused by oxidative stress. More research on the benefits of blueberry fruit consumption in human intervention studies is warranted.
The cytotoxic effect of Bowman–Birk isoinhibitors, IBB1 and IBBD2, from soybean (Glycine max) on HT29 human colorectal cancer cells is related to their intrinsic ability to inhibit serine proteases
Authors: Clemente Alfonso , Moreno Francisco Javier , Marín‐Manzano Maria del Carmen , Jiménez Elisabeth , Domoney Claire 
Published: November 2009

AbstractBowman–Birk inhibitors (BBI) from soybean and related proteins are naturally occurring protease inhibitors with potential health‐promoting properties within the gastrointestinal tract. In this work, we have investigated the effects of soybean BBI proteins on HT29 colon adenocarcinoma cells, compared with non‐malignant colonic fibroblast CCD‐18Co cells. Two major soybean isoinhibitors, IBB1 and IBBD2, showing considerable amino acid sequence divergence within their inhibitory domains, were purified in order to examine their functional properties, including their individual effects on the proliferation of HT29 colon cancer cells. IBB1 inhibited both trypsin and chymotrypsin whereas IBBD2 inhibited trypsin only. Despite showing significant differences in their enzyme inhibitory properties, the median inhibitory concentration values determined for IBB1 and IBBD2 on HT29 cell growth were not significantly different (39.9±2.3 and 48.3±3.5 μM, respectively). The cell cycle distribution pattern of HT29 colon cancer cells was affected by BBI treatment in a dose‐dependent manner, with cells becoming blocked in the G0–G1 phase. Chemically inactive soybean BBI had a weak but non‐significant effect on the proliferation of HT29 cells. The anti‐proliferative properties of BBI isoinhibitors from soybean reveal that both trypsin‐ and chymotrypsin‐like proteases involved in carcinogenesis should be considered as potential targets of BBI‐like proteins.
Micromechanical viscoelasto‐plastic models and finite element implementation for rate‐independent and rate‐dependent permanent deformation of stone‐based materials
Authors: Dai Qingli 
Published: November 2009

AbstractThis paper presents parallel and serial viscoelasto‐plastic models to simulate the rate‐independent and the rate‐dependent permanent deformation of stone‐based materials, respectively. The generalized Maxwell viscoelastic and Chaboche's plastic models were employed to formulate the proposed parallel and serial viscoelasto‐plastic constitutive laws. The finite element (FE) implementation of the parallel model used a displacement‐based incremental formulation for the viscoelastic part and an elastic predictor—plastic corrector scheme for the elastoplastic component. The FE framework of the serial viscoelasto‐plastic model employed a viscoelastic predictor—plastic corrector algorithm. The stone‐based materials are consisted of irregular aggregates, matrix and air voids. This study used asphalt mixtures as an example. A digital sample was generated with imaging analysis from an optically scanned surface image of an asphalt mixture specimen. The modeling scheme employed continuum elements to mesh the effective matrix, and rigid bodies for aggregates. The ABAQUS user material subroutines defined with the proposed viscoelasto‐plastic matrix models were employed.The micromechanical FE simulations were conducted on the digital mixture sample with the viscoelasto‐plastic matrix models. The simulation results showed that the serial viscoelasto‐plastic matrix model generated more permanent deformation than the parallel one by using the identical material parameters and displacement loadings. The effect of loading rates on the material viscoelastic and viscoelasto‐plastic mixture behaviors was investigated. Permanent deformations under cyclic loadings were determined with FE simulations. The comparison studies showed that the simulation results correctly predicted the rate‐independent and rate‐dependent viscoelasto‐plastic constitutive properties of the proposed matrix models. Overall, these studies indicated that the developed micromechanical FE models have the abilities to predict the global viscoelasto‐plastic behaviors of the stone‐based materials. Copyright © 2009 John Wiley & Sons, Ltd.
Synergistic effects of ferric pyrophosphate (FePP) in intumescent flame‐retardant polypropylene
Authors: Nie Shibin , Song Lei , Bao Chenlu , Qian Xiaodong , Guo Yuqiang , Hong Ningning , Hu Yuan 
Published: November 2009

AbstractFerric pyrophosphate (FePP) was added to an ammonium polyphosphate (APP)—pentaerythritol (petol) intumescent flame retardant (IFR) system in polypropylene (PP) matrix, with subsequent investigation into the synergistic effect between FePP and the IFRs. Limited oxygen index (LOI), UL‐94 test and cone calorimeter test were employed to study the flame retardance of the synthesized flame retardant PP composites. Thermogravimetric analysis (TGA) and thermogravimetric analysis‐infrared spectrometry (TG‐IR) were used to study their thermal degradation characteristics and gas products. TG‐IR results demonstrate that there is no Fe (CO)5 produced from PP/IFR/FePP system, which implies that the flame retardant mechanism of PP/IFR/FePP system is in the condensed phase rather than in the gas phase. Real time FTIR and X‐ray photoelectron spectroscopy (XPS) were used to monitor the thermal oxidative stability and the high temperature performance of the flame retardant PP composites. The real time FTIR spectra show that all peaks around 2900 cm−1 almost disappear at 380°C for the PP/IFR system, meaning that PP decomposes completely at this temperature. But after the addition of 2 wt%wt% FePP, the peaks still exist till 400°C. XPS shows that the aliphatic carbon atom content in PP/23 wt%wt% IFR/2 wt%wt% FePP (63.8%) is much higher than the one without FePP, and the total oxygen atom content in PP/23 wt%wt% IFR/2 wt%wt% FePP is just 19.1%, while the one in PP/25 wt% IFR is as high as 35.7%. Copyright © 2009 John Wiley & Sons, Ltd.
Zwischen Mikrowellen und Infrarot. Terahertz‐Wellen
Authors: Theuer Michael , Molter Daniel , Rahm Marco , Beigang René 
Published: November 2009

AbstractTerahertz‐Wellen liegen zwischen dem Infrarot‐ und dem Mikrowellenbereich. Auf der niederfrequenten Seite dieses Spektralfensters lassen sie sich elektronisch erzeugen. Für höherfrequentere THz‐Wellen wird modernste Lasertechnik, darunter Femtosekunden‐Laser, eingesetzt. Wie Mikrowellen können sie viele Materialien durchleuchten, ermöglichen aber wegen der kürzeren Wellenlänge eine höhere Ortsauflösung. Dabei können sie Bilder und spektroskopische Informationen liefern. In der Grundlagenforschung sind sie schon etabliert, in der Industrie nimmt ihr Einsatz zu. Er reicht von Scannern für den Sicherheitsbereich bis zur Materialprüfung. Neue optische Technologien ermöglichen innovative THz‐Quellen und ‐Detektoren. Metamaterialien eröffnen völlig neue Wege zum Bau “optischer” Komponenten für THz‐Wellen, die die Anwendungsmöglichkeiten erweitern.
Quantensprünge des Lichts. Zerstörungsfreie Photonenmessung
Authors: Kuhr Stefan 
Published: November 2009

AbstractMessungen an Lichtquanten zerstören diese normalerweise durch Absorption. Kürzlich gelang es einer Forschergruppe in Paris, ein einzelnes gespeichertes Photon mehrmals hintereinander zerstörungsfrei nachzuweisen. Sie verwendete dazu einen Resonator aus zwei supraleitenden Spiegeln, der ein Mikrowellenphoton 0,13 s lang speichern kann. Durch ihn schickten die Forscher Rubidium‐Atome im hoch angeregten Rydberg‐Zustand. Sie registrieren sehr empfindlich das elektrische Feld eines anwesenden Photons. Die Atome liefern so eine präzise Information über die Zahl der Photonen im Resonator, ohne diese zu zerstören. Mit dieser Methode gelang es erstmals, Quantensprünge des Lichtfeldes experimentell nachzuweisen. Zerstörungsfreie Quantenmessungen eignen sich auch zur Untersuchung exotischer Quantenzustände. Dazu zählen zum Beispiel Schrödinger‐Katzen‐Zustände.
Kreislauf eines kosmischen Überlebenskünstlers. Polyzyklische aromatische Kohlenwasserstoffe im All
Authors: Fuchs Guido W. 
Published: November 2009

AbstractPolyzyklische aromatische Kohlenwasserstoffe sind eine äußerst wichtige Molekülklasse für die chemisch‐physikalische Entwicklung der kosmischen Materie. Diese Moleküle entstehen im Umfeld kohlenstoffreicher Roter Riesensterne, gelangen von dort ins interstellare Medium und können in neu entstehende Planetensysteme eingebunden werden. PAHs sind die einzigen bekannten komplexen Moleküle, die den kosmischen Lebenszyklus der Materie von Anfang bis zum Ende durchleben und sogar einen entscheidenden Einfluss auf die Entstehung des Lebens auf der Erde gehabt haben können.
Intimacy processes and psychological distress among couples coping with head and neck or lung cancers
Authors: Manne Sharon , Badr Hoda 
Published: November 2009

AbstractObjective: Couples coping with head and neck and lung cancers are at increased risk for psychological and relationship distress given patients' poor prognosis and aggressive and sometimes disfiguring treatments. The relationship intimacy model of couples' psychosocial adaptation proposes that relationship intimacy mediates associations between couples' cancer‐related support communication and psychological distress. Because the components of this model have not yet been evaluated in the same study, we examined associations between three types of cancer‐related support communication (self‐disclosure, perceived partner disclosure, and protective buffering), intimacy (global and cancer‐specific), and global distress among patients coping with either head and neck or lung cancer and their partners.Method: One hundred and nine patients undergoing active treatment and their partners whose average time since diagnosis was 15 months completed cross‐sectional surveys.Results: For both patients and their partners, multilevel analyses using the actor‐partner interdependence model showed that global and cancer‐specific intimacy fully mediated associations between self‐ and perceived partner disclosure and distress; global intimacy partially mediated the association between protective buffering and distress. Evidence for moderated mediation was found; specifically, lower levels of distress were reported as a function of global and cancer‐specific intimacy, but these associations were stronger for partners than for patients.Conclusions: Enhancing relationship intimacy by disclosing cancer‐related concerns may facilitate both partners' adjustment to these illnesses. Copyright © 2010 John Wiley & Sons, Ltd.
Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy
Authors: Kawaharazuka Atsushi , Yoshizaki Tadashi , Hiratsuka Takato , Horikoshi Yoshiji 
Published: November 2009

AbstractWe investigate the effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy (MBE) with ammonia as a nitrogen source. Control of the surface Ga condition is very important because the crystallization process strongly depends on the surface Ga coverage. The growth rate rapidly decreases when the supply of Ga exceeds certain amount when growing with ammonia, in contrast to the saturation grown with radio‐frequency plasma source. The critical Ga supply becomes higher by introducing the migration‐enhanced epitaxy (MEE). The growth rate is slightly higher for MEE compared with MBE in the region where it linearly increases with increasing the Ga supply.These phenomena can be explained by the model taking into account the surface coverage of the excess Ga, accumulation of Ga into droplet and diffusion of them during ammonia supply period. At elevated temperatures, surface Ga accumulation is less effective since Ga atoms can evaporate from the surface. The surface morphology becomes smoother by using MEE due to the quick Ga diffusion on the surface during the ammonia supply period. These results shows that MEE is very useful technique for the GaN growth with ammonia since the control of the surface Ga accumulation is very important (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ALD growth of Al2O3 on GaAs: Oxide reduction, interface structure and CV performance
Authors: Lee H. D. , Feng T. , Yu L. , Mastrogiovanni D. , Wan A. , Garfunkel E. , Gustafsson T. 
Published: November 2009

AbstractWe have studied the effect of the trimethylaluminum (TMA) precursor on the reduction of surface “native” oxides from GaAs substrates using medium energy ion scattering spectroscopy (MEIS), X‐ray photoelectron spectroscopy (XPS) and electrical measurements. Our data show that after one single TMA pulse a substantial part of the native oxide is reduced and an oxygen‐rich aluminum oxide layer is formed. Al2O3 films grown with the normal atomic layer deposition cycles of TMA and water show that the growth rate of the Al oxide during this initial reduction of the native oxides is faster than the rate once this reduction is completed. Furthermore, the results of C‐V measurements of Al2O3/GaAs grown under the same conditions along with post deposition annealing indicate a good quality interface. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Computational study for growth of GaN on graphite as 3D growth on 2D material
Authors: Ishii Akira , Tatani Takaaki , Asano Hiroki , Nakada Kengo 
Published: November 2009

AbstractThe density functional calculation is performed to determine the structure of the grown GaN film on graphite for comparison with experimental results using pulsed laser deposition method. The predicted result for polarity of the grown GaN is (0001) and it agrees with experiment. Since GaN is grown well on graphite, graphite is considered to be an ideal lattice mismatch free substrate for heteroepitaxial growth. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Passivation of Si surfaces by hydrogen and organic molecules investigated by in‐situ photoluminescence techniques
Authors: Rappich Joerg , Zhang Xin , Chapel Sébastien , Sun Guoguang , Hinrichs Karsten 
Published: November 2009

AbstractWe investigated the amount of defects at Si surfaces modified by wet‐chemical etch‐back of oxide layers and varying electrochemical grafting procedures for organic molecules by means of pulsed photoluminescence (PL) techniques during the processing. The etch‐back of oxidized Si surfaces by HF containing solutions leads to a strong enhancement in PL due to hydrogenation of the surface which reduces the recombination loss of charge carriers via surface/interface states. This type of well passivated Si surface is preserved by grafting of organic molecules (exchanging the H‐Si by a C‐Si bond) which induces only small amounts of defects at the interface. The rate of grafting is reduced with decreasing pH of the aqueous solution while the PL intensity increases slightly. This behavior is a result of H‐capture from the solvent instead of binding organic molecules. Variation in the solvent for the radicalic grafting process, e.g. anhydrous acetonitrile (ACN), leads to a decrease in PL intensity since ACN itself induces surface recombination on the H‐terminated Si surface. IR spectra reveal the binding of the organic molecules due to their specific vibrational modes. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electron‐phonon‐plasmon interaction in MBE‐grown indium nitride – A high resolution electron energy loss spectroscopy (HREELS) study
Authors: Kloeckner K. , Himmerlich M. , Koch R. J. , Polyakov V. M. , Eisenhardt A. , Haensel T. , Ahmed S. I.‐U. , Krischok S. , Schaefer J. A. 
Published: November 2009

AbstractWe studied InN (0001) grown by plasma assisted molecular beam epitaxy (PAMBE) with high‐resolution electron energy‐loss spectroscopy (HREELS) after vacuum transfer thus avoiding any further surface preparation. We were able to detect for the first time besides the Fuchs‐Kliewer surface phonon ω0 two plasmarons ω– and ω+, which originate from the coupling between surface optical phonons ωSO and plasma oscillations of free electrons resulting from the surface accumulation layer and/or the bulk conduction band. Using dielectric theory we get new insight into the space charge regime of InN grown by MBE. We choose an approach that reaches far beyond the accumulation layer regime. Using a very wide primary beam energy regime from 1 eV up to 200 eV, the depth of information can be varied from extremely surface sensitive to bulk sensitive. Best agreement has been obtained for a downward band bending of 0.9 eV and a peak accumulation layer density of 6.5 × 1019 cm‐3 at 2 nm beneath the surface with an unintentional doping of the bulk of 1 × 1019 cm‐3. The sheet density of the ionized surface states is determined to Nss = 1.8 × 1013 cm‐2 from the self‐consistent calculation of the conduction band profile. The presented results provide important information for future InN‐based devices. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Ab initio study of one‐dimensional disorder on III‐V semiconductor surfaces
Authors: Romanyuk O. , Grosse F. , Braun W. 
Published: November 2009

AbstractAtomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001) β (4 × 3), β (4 × 3)A1, (4 × 6), and GaAs(001) β 2(2 × 4), c (4 × 4) reconstructions. The computed energy differences do not exceed 1 meV / (1 × 1) which is in agreement with observed one‐dimensional disorder on GaSb(001) and GaAs(001) surfaces at elevated temperatures for β and β 2 stoichiometries, respectively. Deviations in bond lengths due to disorder with respect to the ordered ground state phases are calculated (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Quantitative evaluation of electroluminescence images of solar cells
Authors: Breitenstein O. , Khanna A. , Augarten Y. , Bauer J. , Wagner J.‐M. , Iwig K. 
Published: November 2009

AbstractA fast converging iterative procedure is proposed to calculate series resistance (Rs) and saturation current (j0) images from two electroluminescence (EL) images taken at two biases. It is not necessary here that for one bias the influence of the series resistance is negligible. Moreover, voltage series of EL images have been evaluated for calculating images of Rs, j0, and the parallel conductance Gp separately. However, it has been found that Rs variations cannot uniquely be separated from Gp variations. The reason for this is discussed. Thus, for quantitatively detecting weak ohmic shunts, EL imaging cannot replace lock‐in thermography. For strong ohmic shunts a formula for converting EL images into shunt images is given. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
Authors: Dingemans G. , Seguin R. , Engelhart P. , Sanden M. C. M. van de , Kessels W. M. M. 
Published: November 2009

AbstractIn this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD with an O2 plasma, can be used to deposit Al2O3 for a high level of surface passivation of crystalline silicon (c‐Si). For 3.5 Ω cm n‐type c‐Si, plasma ALD Al2O3 resulted in ultralow surface recombination velocities of Seff < 0.8 cm/s. Thermal ALD Al2O3 also showed an excellent passivation level, with Seff < 2.5 cm/s. In contrast to plasma ALD Al2O3, thermal ALD Al2O3 provides some surface passivation in the as‐deposited state, although annealing is required to activate it to the full extent. For thermal ALD, the optimal temperature for this anneal was found to be slightly lower, ∼375 °C, than for plasma ALD Al2O3, ∼425 °C. The minimal Al2O3 thickness without compromising the passivation properties was 5 nm for plasma ALD Al2O3, whereas for thermal ALD, films >10 nm were required. Thermal stability against a high temperature firing step was demonstrated for ultrathin thermal and plasma ALD Al2O3 films of 5 nm by Seff < 9.2 and < 6.5 cm/s, respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)