bluuebunny/crossref_metadata_2025_split huggingface dataset:
Nuclear and radiochemistry in China: present status and future perspectives
Authors: Shi W.-Q. , Zhao Y.-L. , Chai Z.-F. 
Published: July 2012

AbstractNuclear and radiochemistry is one of the frontier areas of chemistry with high impact on national security, energy supply, scientific advances, social and economic development. Nuclear and radiochemistry in China is now experiencing a renaissance, which is being strongly motivated by China’s huge demand for nuclear energy. With this in review, the progress in nuclear and radiochemistry of China is selectively addressed. Some hot topics have been summarized and the main research results achieved by Chinese scientists in this field are highlighted, with emphasis on the basic nuclear chemistry, actinide and trans-actinide chemistry, chemistry of spent nuclear fuel reprocessing, radioanalytical chemistry, environmental radiochemistry and radiopharmaceutical chemistry, etc. Some measures about how to promote the radiochemical education and research in China are suggested, and future perspectives are briefly outlined as well.
Nanomaterials and nanotechnologies in nuclear energy chemistry
Authors: Shi W.-Q. , Yuan L.-Y. , Li Z.-J. , Lan J.-H. , Zhao Y.-L. , Chai Z.-F. 
Published: July 2012

Abstract
With the rapid growth of human demands for nuclear energy and in response to the challenges of nuclear energy development, the world’s major nuclear countries have started research and development work on advanced nuclear energy systems in which new materials and new technologies are considered to play important roles. Nanomaterials and nanotechnologies, which have gained extensive attention in recent years, have shown a wide range of application potentials in future nuclear energy system. In this review, the basic research progress in nanomaterials and nanotechnologies for advanced nuclear fuel fabrication, spent nuclear fuel reprocessing, nuclear waste disposal and nuclear environmental remediation is selectively highlighted, with the emphasis on Chinese research achievements. In addition, the challenges and opportunities of nanomaterials and nanotechnologies in future advanced nuclear energy system are also discussed.
The impact of the properties of the heaviest elements on the chemical and physical sciences
Authors: Kratz J. V. 
Published: July 2012

Abstract
The unique role of the heaviest elements in chemical and physical sciences is discussed. With the actinide series (Z = 90-103) and the superactinide series (Z = 122-155), the heaviest elements have significantly shaped the architecture of the Periodic Table of the elements. Relativistic effects in the electron shells of the heaviest elements change the chemical properties in a given group in a non-linear fashion. Relativistically stabilized sub-shell closures give rise to a new category of elements in the Periodic Table: volatile metals. The prototype for this property is element 114 which, due to the relativistic stabilization of its 7s2 7p2
1/2 electron configuration, is volatile in its elementary state, but, in contrast to a noble gas, exhibits a marked metalmetal interaction with a gold surface at room temperature. Nuclear shell effects dominate the physical properties of the transuranium elements. These give rise to superdeformed shape isomers (fission isomers) in the actinides (U-Bk). Superheavy elements (Z ≥ 104) owe their existence solely to nuclear shell effects at N = 152, 162, and 184. At this time, a building lot is the location of the next spherical proton shell closure as there is evidence that the center of the “island of stability” is not at Z = 114. This needs urgently further theoretical and experimental efforts. The cross sections for the syntheses of elements 119 and 120 will give us important information on the “upper end of the Periodic Table of the elements”.
Two-mode fission – experimental verification and characterization of two fission-modes
Authors: Nagame Y. , Nakahara H. 
Published: July 2012

AbstractExperimental verification and characterization of the two-mode fission are reviewed. The presence of two independent deformation-paths in low energy fission of actinides is demonstrated by studying correlation among saddle-point configurations, scission-point configurations, and mass-yield distributions; the elongated scission configuration is related with the fission process that goes over a higher threshold energy and results in a symmetric mass-division mode, while the compact scission configuration with the process that experiences a lower threshold ends up with an asymmetric mass-division mode. Based on an extensive systematic analysis of scission properties in a wide range of actinide fission, the bimodal fission observed in the spontaneous fission of the heavy actinides is interpreted as the result of the presence of two fission paths, namely, the ordinary asymmetric fission path and a strongly shell-influenced symmetric mode.
ZrO2 Layer Thickness and Field Dependent Leakage Current in Ba0.8Sr0.2TiO3/ZrO2 Heterostructured Thin Films
Authors: Sahoo Santosh K. , Sahoo Manjulata , Majhi Banshidhar 
Published: July 2012

AbstractHeterostructured Ba0.8Sr0.2TiO3/ZrO2/Ba0.8Sr0.2TiO3 thin films are fabricated on the platinized Si substrates by a sol-gel process. The current versus voltage measurements are taken on these films by varying the thickness of ZrO2 layer. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in leakage current which is very essential for the low dissipation energy and hence faster operation of memory devices. It is observed that the leakage current further decreases as the ZrO2layer thickness increases. Also it is seen that different conduction mechanisms are contributing to the leakage current in the different field regions. Poole-Frenkel (PF), space charge limited current (SCLC), and Ohmic mechanisms are the dominating conduction processes in high, medium, and low field regions respectively. An energy band diagram is given to explain the Ohmic conduction in the low field region and the Poole-Frenkel conduction mechanism in the high field region for these devices.
Impact of curing condition on chemical stability of ultralow-k PMO material.
Authors: Krishtab M. B. , Zhang L. , Le Q. T. , Vanstreels K. , Souriau L. , Phillips M. , Baklanov M. R. 
Published: July 2012

ABSTRACTIn this work a new generation of periodic mesoporous organosilica (PMO) low-k dielectrics with targeted k-values 2.0 and 1.8 is evaluated. In addition, impact of two different curing processes on properties of the mesoporous material is analyzed. It is shown that removal of templating organics with thermal annealing leads to formation of mechanically robust and chemically very stable material, while application of UV-assisted curing with broadband lamp (λ > 200 nm) causes pronounced decrease of film ability to sustain in diluted HF solution. The explanation of that phenomenon is given in terms of silica-ring structures formed within organosilica skeleton.
Etch Process Optimization and Electrical Improvement in TiN Hard Mask Ultra-Low K Interconnection
Authors: Chang Chih-Yang , Kang Sean , Kao Chia-ling , Citla Bhargav S. , Bekiaris Nikos , Chen Yongmei , Chan-Sew Lothar , Lill Thorsten 
Published: July 2012

ABSTRACTAs critical dimensions decrease, key dimension-related dielectric etch challenges emerge, including via and trench uniformity and etch depth profile. The transition to ultra-low-k films such as BDIII (Black Diamond; k=2.55) dielectrics requires consideration of film sensitivity to compositional modification, polymer interactions at pores, and the effect of diffusion. Use of N2/O2 plasma at 60 ˚C to modify the M1 trench profile has been demonstrated to lower the RC delay by 14% as compared to traditional CO2 plasmas at 60˚C. Use of a DHF solution to clean the etching residue in the dual damascene structure results in >97% yield with a tight range of via chain resistance.
Molecular beam epitaxy growth of Sr1-xKxFe2As2 and Ba1-xKxFe2As2
Authors: Naito Michio , Ueda Shinya , Takeda Soichiro , Takano Shiro , Mitsuda Akihiro 
Published: July 2012

ABSTRACTSingle-crystalline films of superconducting Sr1-xKxFe2As and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350 ºC) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ~ 0.3.
Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources
Authors: Kuyken Bart , Liu Xiaoping , Osgood Richard M. , Baets Roel , Roelkens Gunther , Green William M. 
Published: July 2012

ABSTRACTMost of the research on silicon-on-insulator integrated circuits has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands.We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm.Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.
Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers
Authors: Malm Gunnar B. , Kolahdouz Mohammadreza , Forsberg Fredrik , Roxhed Niclas , Niklaus Frank 
Published: July 2012

ABSTRACTSemiconductor-based thermistors are very attractive sensor materials for uncooled thermal infrared (IR) bolometers. Very large scale heterogeneous integration of MEMS is an emerging technology that allows the integration of epitaxially grown, high-performance IR bolometer thermistor materials with pre-processed CMOS-based integrated circuits for the sensor read-out. Thermistor materials based on alternating silicon (Si) and silicon-germanium (SiGe) epitaxial layers have been demonstrated and their performance is continuously increasing. Compared to a single layer of silicon or SiGe, the temperature coefficient of resistance (TCR) can be strongly enhanced to about 3 %/K, by using thin alternating layers. In this paper we report on the optimization of alternating Si/SiGe layers by advanced physically based simulations, including quantum mechanical corrections. Our simulation framework provides reliable predictions for a wide range of SiGe layer compositions, including concentration gradients. Finally, our SiGe thermistor layers have been evaluated in terms of low-frequency noise performance, in order to optimize the bolometer detectivity.
Growth of CVD graphene on copper by rapid thermal processing
Authors: Kim W. , Riikonen J. , Arpiainen S. , Svensk O. , Li C. , Lipsanen H. 
Published: July 2012

ABSTRACTWe have investigated the fabrication of graphene by chemical vapor deposition using a conventional rapid thermal processing system with infrared heating. Graphene films were grown on the pretreated copper foil in RTP at 935-960°C at pressure of 6~7 mbar. The grown films were characterized by scanning electron microscope and Raman spectroscopy to investigate morphology of graphene. The growth of graphene was initiated by small flakes that spread rapidly covering the whole copper surface as a single-layer film in ~20 seconds. Room temperature mobility and sheet resistance extracted by transfer-length method (TLM) for the graphene film transferred onto the SiO2/Si substrate were around 1,800 cm2/Vs and 260 Ω/ð with the gate voltage, respectively.
Monodispersed Nanodiamonds Produced by Laser Ablation
Authors: Zousman Boris , Levinson Olga 
Published: July 2012

AbstractNanodiamond powder (ND) has become one of the most promising and well-studied nanomaterials applied in various fields of science, technology and medicine. Recent achievements in the development of advanced ND applications present new demands to ND quality: purity, homogeneity of primary particle dimensions and surface area chemistry. ND produced by state-of-the-art technology of detonation synthesis doesn’t meet requirements for biomedical and optical applications. Therefore, alternative methods of ND synthesis from pure carbon raw materials enabling to control the process are of especial importance.The novel technology for ND laser synthesis has been developed by Ray Techniques Ltd. The method is based on high-intensive laser radiation treatment of the specially prepared target containing non-diamond carbon soot and hydrocarbons, placed in a liquid media. As a result, carbon atoms collect to form a cubic diamond crystalline lattice. To reach that, the appropriate parameters of the laser radiation, special composition of the target and the liquid media, as well as the treatment procedures were determined. The “winning” combination of these factors enables to obtain pure nanodiamonds (RayND). In contrast to the existing technology, the RT method is highly controllable, environment-friendly and efficient.RayND obtained under different conditions were studied and compared with detonation ND currently available at the market. It is proved that the higher level of purity and homogeneity of RayND constitutes significant advantages for most ND applications. Using RayND opens new frontiers in biomedicine (drug- and gene-delivery and bio-imaging agents), electronic industry (abrasives for wafer polishing, heat-conductive electrical-insulating compounds, CVD coatings, emitters, etc) and optics (displays, protective transparent films, laser lenses, optical windows and filters).
Pore sealing of SiOCH ultra low-k dielectrics with polyimide Langmuir-Blodgett film
Authors: Goloudina S.I. , Ivanov A. S. , Krishtab M. B. , Luchinin V.V. , Pasyuta V.M. , Gofman I. V. , Sklizkova V. P. , Kudryavtsev V. V. , Baklanov M. R. 
Published: July 2012

ABSTRACTContinuous decrease of the feature size of transistors in modern integrated circuits (ICs) constrains thickness of auxiliary dielectric layers in interconnects because of their relatively high dielectric constant, which reduces the efficiency of low-k material integration. Dielectric materials used today as barrier or etch-stop layers are usually SiN (k ∼ 7.0) and SiCN (k ∼ 4.8), which k-value significantly exceeds that of recent ultra low-k materials (k < 2.2). In our work we have investigated thin films of rigid-chain polyimide (PI) with a k-value of about 3.2-3.3. This film was deposited using a Langmuir-Blodgett (LB) technique and can be as thin as several monolayers. The intermolecular interaction of densely packed precursor macromolecules within a monolayer formed at the water-air interface makes it possible to avoid penetration of precursor material inside the pores. The latter peculiarity of the deposition process results in a pore sealing effect using a 4 nm PI film.
Development of a Suite of Computational Models for the Design of Ultralow-k SiCOH-based Materials
Authors: Cooper Alexandra , Clancy Paulette 
Published: July 2012

ABSTRACTA computational model of amorphous SiCOH materials is described that will facilitate studies of SiCOH behavior under different thermal and mechanical stresses. This involved developing an atomic-scale model of an SiCOH thin film, which exhibited structural, mechanical and electrical properties in agreement with experimental studies. We developed a unique process for computationally creating the structure of SiCOH films. We created an algorithm for introducing and estimating porosity in the system, which provides detailed information about the system’s pore size distribution on multiple length scales. We used Density Functional Theory (DFT) to develop a simple correlation that calculates the dielectric constant of a large SiCOH structure based only on its atomic composition and volume. Finally, we confirmed the mechanical properties of the model using established Molecular Dynamics techniques. We verified that essential electronic and mechanical properties of the model structure reproduce experimental data for a representative SiCOH material within acceptable accuracy. We find the mechanical properties are significantly weakened by the presence of pendant carbon groups.
Cu CMP and its Challenge for 20nm Nodes and Beyond
Authors: Zhang John H. , Tseng Wei-Tsu , Economikos Laertis , Fang Qiang , Zheng Jianping , Yang Lin , Canaperi Donald F. , Lofaro Michael , Kim Ben , Hu Chao-Kun , Liniger Eric G. , Murphy Richard , Leo Tai Tsong L. , Kleemeier Walter , Goldberg Cindy , Muncy Jennifer , Chen Xiaomeng , Sampson Ron 
Published: July 2012

ABSTRACTThe challenges associated with meeting 20nm technology requirements for better Cu CMP process uniformity and lower defectivity have been studied. Required improvements in uniformity were obtained through platen process optimization along with evaluation & selection of specific Cu slurries and pads and their performance reported. The principal factors influencing defect formation, including Cu barrier metallurgy, interconnect pattern density and process queue times were studied. Specific new post CMP clean chemistries were evaluated to assess their capability to suppress defect formation and their performance reported. The trade off between uniformity and defect suppression as a function slurry, pad and post Cu CMP clean chemistry is described.
Advanced Slurry Formulations for New Generation Chemical Mechanical Planarization (CMP) Applications
Authors: Basim Bahar , Karagoz Ayse , Ozdemir Zeynep 
Published: July 2012

ABSTRACTChemical Mechanical Planarization (CMP) is widely used to ensure planarity of metal and dielectric surfaces to enable photolithography and hence multilevel metallization in microelectronics manufacturing. The aim of this study is to establish a fundamental understanding on the dynamic growth of nano-scale protective oxide thin films during CMP to enable the selection of proper oxidizer concentrations for slurry formulations. Tungsten was selected as the model metal film to study the formation of these metal oxide films in various oxidizers and Atomic Force Microscope (AFM) was used to measure the surface roughness of the samples conditioned in the oxidizer environment before and after the CMP was conducted. The affect of surface roughness on wettability of the surfaces were also studied through contact angle measurements on the treated tungsten films. Fourier Transform Infrared Spectroscopy with Attenuated Total Reflectance FTIR/ATR technique in combination with the X-Ray Reflectivity (XRR) were utilized to determine the thicknesses of the oxidized nano films on the tungsten surface. The results were evaluated through the material removal responses reported in the literature for the W-CMP in addition to the comparison of the Pilling-Bedworth ratios of the oxidized nano films to determine the ability of the created oxide film as a self-protective oxide.
Silicon Interposer Reliability Optimization through Process-Oriented Stress Modeling
Authors: Kappaganthu Sri Ramakanth , Karmarkar Aditya , Xu Xiaopeng 
Published: July 2012

ABSTRACTA process-oriented stress modeling methodology is developed to investigate the stress evolution during the silicon interposer packaging process. An FEM based 3D TCAD simulator is used to perform the process steps to construct the silicon interposer stack in sequential order. These steps include TSV fabrication for passive silicon interposer, micro-bumping and reflow process for integrating active dies and passive interposer, C4-bumping and reflow for interposer BT-substrate stacking, and epoxy mold curing for interposer encapsulation. Stress simulations are carried out for each process step to obtain accurate stress evolution history. To resolve micron features within millimeter structures, the modeling strategy employs symmetry conditions, and equivalent materials for regions away from structure features of interest. The detailed structure includes 3x3 arrays of microbumps, TSV arrays, and C4-bumps with multiple material layers at the stack corner. Important design parameters include interposer thickness and edge clearance. For different silicon interposer configurations critical stresses in the outmost microbump and C4-bump are analyzed and compared. The reliability implications are discussed.
Photocatalytic Activity of Anatase Fiber-Mats
Authors: Alves Annelise K. , Berutti Felipe A. , Bergmann Carlos P. 
Published: July 2012

ABSTRACTNanostructured fiber-mats have large surface area, high reactivity, low weight and low agglomeration tendency. These are advantages if compared with nanoparticles for photocatalytic application. Fiber-mats can be used not only as a photocatalytic material on their own, but also incorporated in different surfaces or fabrics and as well as a filtration membrane. In this work, high temperature stable anatase titanium dioxide fiber-mats doped with silica (0.5 to 30 %) or doped with tin (0.5 to 15 %) were produced by electrospinning technology. The precursors used were titanium propoxide (TiP), tetrapropoxysilane (TPS) and tin 2-ethylhexanoate. They were hydrolyzed in acetic acid and mixed with an alcoholic solution of 10 wt% polyvinylpirrolidone. The effect of heat treatment on the microstructure characteristics and the photocatalytic activity of the fiber-mats in comparison with a commercial TiO2 powder (Evonik P-25) were studied. After the electrospinning process, a thin, porous fiber-mat was obtained. This material was dried in air at room temperature for 24h. These fibers were then heat treated from 500 to 800°C for 3 hours at a heating rate of 1.4°C/min. The fiber-mats were then characterized using N2 adsorption (BET method) for surface area measurements, X-ray diffraction for phase determination, SEM and TEM analyses for morphological characterization. The photocatalytic activity was studied using as model system the degradation of methyl orange in water (20ppm) under UV-A light. As-obtained fibers are amorphous but become crystalline after heat treatment. As the heat treatment temperature increases the surface area decreases significantly. Quite the opposite happens with the rutile to anatase ratio and the anatase and rutile crystallite sizes, which increase with higher heat treatment temperatures. The photoactivity increases with the increment in heat treatment temperature until 650°C, when the fibers start to become denser and the surface area drops due to sintering. Fibers produced at higher temperatures and with lower amounts of Si and Sn are predominantly anatase and are generally more photoactive under UV-A radiation.