bluuebunny/crossref_metadata_2025_split huggingface dataset:
Accurate Prediction of Genetic Values for Complex Traits by Whole-Genome Resequencing
Authors: Meuwissen Theo , Goddard Mike 
Published: March 2010

AbstractWhole-genome resequencing technology has improved rapidly during recent years and is expected to improve further such that the sequencing of an entire human genome sequence for $1000 is within reach. Our main aim here is to use whole-genome sequence data for the prediction of genetic values of individuals for complex traits and to explore the accuracy of such predictions. This is relevant for the fields of plant and animal breeding and, in human genetics, for the prediction of an individual's risk for complex diseases. Here, population history and genomic architectures were simulated under the Wright–Fisher population and infinite-sites mutation model, and prediction of genetic value was by the genomic selection approach, where a Bayesian nonlinear model was used to predict the effects of individual SNPs. The Bayesian model assumed a priori that only few SNPs are causative, i.e., have an effect different from zero. When using whole-genome sequence data, accuracies of prediction of genetic value were &gt;40% increased relative to the use of dense ∼30K SNP chips. At equal high density, the inclusion of the causative mutations yielded an extra increase of accuracy of 2.5–3.7%. Predictions of genetic value remained accurate even when the training and evaluation data were 10 generations apart. Best linear unbiased prediction (BLUP) of SNP effects does not take full advantage of the genome sequence data, and nonlinear predictions, such as the Bayesian method used here, are needed to achieve maximum accuracy. On the basis of theoretical work, the results could be extended to more realistic genome and population sizes.
Industry and Injury Related Hospital Contacts: A Follow‐up Study of Injuries among Working Men in Denmark
Authors: Pedersen Betina Holbæk , Hannerz Harald , Tüchsen Finn , Mikkelsen Kim Lyngby , Dyreborg Johnny 
Published: March 2010

Industry and Injury Related Hospital Contacts: A Follow‐up Study of Injuries among Working Men in Denmark: Betina Holbæk Pedersen, et al. National Research Centre for the Working Environment, DenmarkObjectivesTo estimate proportions of injuries that are attributable to the work environment (excess fractions) among economically active men and to identify industries associated with an elevated injury risk.MethodsA follow‐up study was conducted among all economically active men in Denmark aged 20–59 yr 1 January 1999 (N=1,315,772) for first hospital contacts in the period 1999–2003 due to injury in five body regions. Age standardised hospital treatment ratios (SHR) were calculated by industry and excess fractions were estimated.ResultsThe excess fractions by body region attributable to the work environment were: 22% (95% CI 18–26%) for lower extremities, 29% (95% CI 24–34%) for head and neck, 31% (95% CI 25–37%) for thorax, 36% (95% CI 30–43%) for upper extremities, and 39% (CI: 32–46%) for back injuries. We identified eight industries associated with significantly elevated risks for injuries to each of the five body regions. These were: “road contractors”, “bricklayer, joiner, and carpentry work”, “finishing (construction work)”, “transport of goods”, “fire service and salvage corps”, “stone‐works, pottery, and glass industry”, “cleaning, laundries, and dry cleaners”, and “slaughterhouse industry”.ConclusionsThere are substantial industrial inequalities in injury rates among male workers in Denmark. The size of the inequalities differs between body regions.
Multicenter Study of Repeat Epinephrine Treatments for Food-Related Anaphylaxis
Authors: Rudders Susan A. , Banerji Aleena , Corel Blanka , Clark Sunday , Camargo Carlos A. 
Published: March 2010

OBJECTIVE:
We sought to establish the frequency of receiving &gt;1 dose of epinephrine in children who present to the emergency department (ED) with food-related anaphylaxis.

PATIENTS AND METHODS:
We performed a medical chart review at Boston hospitals of all children presenting to the ED for food-related acute allergic reactions between January 1, 2001, and December 31, 2006. We focused on causative foods, clinical presentations, and emergency treatments.

RESULTS:
Through random sampling and appropriate weighting, the 605 reviewed cases represented a study cohort of 1255 patients. These patients had a median age of 5.8 years (95% confidence interval [CI]: 5.3–6.3), and the cohort was 62% male. A variety of foods provoked the allergic reactions, including peanuts (23%), tree nuts (18%), and milk (15%). Approximately half (52% [95% CI: 48–57]) of the children met diagnostic criteria for food-related anaphylaxis. Among those with anaphylaxis, 31% received 1 dose and 3% received &gt;1 dose of epinephrine before their arrival to the ED. In the ED, patients with anaphylaxis received antihistamines (59%), corticosteroids (57%), epinephrine (20%). Over the course of their reaction, 44% of patients with food-related anaphylaxis received epinephrine, and among this subset of patients, 12% (95% CI: 9–14) received &gt;1 dose. Risk factors for repeat epinephrine use included older age and transfer from an outside hospital. Most patients (88%) were discharged from the hospital. On ED discharge, 43% were prescribed self-injectable epinephrine, and only 22% were referred to an allergist.

CONCLUSIONS:
Among children with food-related anaphylaxis who received epinephrine, 12% received a second dose. Results of this study support the recommendation that children at risk for food-related anaphylaxis carry 2 doses of epinephrine.
GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing
Authors: Douglas Erica Ann , Cheney David P. , Chen Ke Hung P. , Chang Chih-Yang P. , Leu Lii-Cherng P. , Gila Brent P. , Abernathy Cammy R. , Pearton Stephen J. 
Published: March 2010

AbstractGaAs based metamorphic and pseudomorphic high electron mobility transistors (HEMTs) under DC and thermal stress were studied. InAlAs/InGaAs MHEMTs grown on GaAs substrates were stressed at a drain voltage bias of 2.7V for 36 hours as well as thermally stressed at 250°C for 36 hours. Under both stress conditions, the drain current density decreased about 12.5%. The gate current, however, increased more after the thermal storage as opposed to DC bias. Reaction of the Ohmic contact with the underlying semiconductor was the main cause of degradation after thermal stressing. Transmission electron microscopy verified that gate sinking occurred in devices that underwent DC bias stressing. InGaAs pHEMTs that received a 1000 hour lifetime stress test from a commercial vendor showed similar degradation as virgin devices when stressed under DC bias for 24 hours. Virgin devices that were thermally stressed while undergoing DC bias showed minimal degradation up to 120°C, but exhibited catastrophic failure at 140°C.
Strain Induced Stoppage of the Emission Peak Blueshift of Annealed Bilayer Quantum Dot Structures Separated by Thin Spacer
Authors: Sengupta Saumya , Halder Nilanjan , Chakrabarti Subhananda 
Published: March 2010

AbstractWe have investigated the effect of post-growth rapid thermal annealing (RTA) at different temperature on two InAs/GaAs bilayer quantum dots samples with different spacer thicknesses (7.5nm and 8.5nm). It is found that when RTA temperature gradually increases, there is usual blue shift of ground state emission peak wavelength for the sample having thinner spacer but for the other sample the emission peak sustains at same peak wavelength position upto a higher annealing temperature. The dots inside the sample with less spacer thickness dissolute much earlier (beyond 700°C annealing temperature) in comparison to the other sample. The structural and optical characterization has been done by cross sectional transmission electron microscope (XTEM) and low temperature photoluminescence (PL) experiments respectively.
Ink Jet Printing Devices and Circuits
Authors: Ready Steven , Arias Ana , Sambandan Sanjiv , Street Robert 
Published: March 2010

AbstractFor several years there have been many efforts to employ ink jet technologies in the fabrication of consumer electronics. The potential of displacing large and expensive pieces of electronic fabrication equipment and processes with seemingly appropriately scaled inexpensive alternatives is attractive. However, of course, the devil is in the details. Feature size, accuracy, registration and materials all have sever impacts on design rules, processing, performance and the types of devices appropriate to the technology. Here we present a look at some of the materials and deposition challenges along with solutions developed at PARC. The discussion will include the defining of printed features >5μm with ±1.5μm drop placement and layer to layer alignment accuracy, the materials characteristics of the generally complex functional fluids of interest required for reliable jetting and device performance. Examples of ink jet fabricated integrated circuits, working displays, imagers and RGB color filters for LCD displays will be shared.
Growth of High Quality c-plane AlN on a-plane Sapphire
Authors: Miyagawa Reina , Wu Jiejun , Miyake Hideto , Hiramatsu Kazumasa 
Published: March 2010

Abstractc-plane (0001) AlN layers were grown on sapphire (11-20) and (0001) substrates by hydride vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE), respectively. The growth temperatures were adjusted from 1430-1500 °C and the reactor pressure was kept constant at 30 Torr. Mirror and flat c-plane AlN were obtained grown on both a-plane and c-plane sapphire. Crystalline quality and surface roughness are improved with increasing growth temperature, detected by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM). The Full widths at half maximum (FWHM) values of (10-12) diffraction are 519 and 1219 arcsec for c-plane AlN grown on a-plane sapphire and c-plane sapphire, respectively. It indicates that a-plane sapphire substrate benefits to decrease dislocations density.
Reliability and Performance of Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates
Authors: Gibb Shawn R. , Grandusky James R. , Cui Yongjie , Mendrick Mark C. , Schowalter Leo J. 
Published: March 2010

AbstractLow dislocation density epitaxial layers of AlxGa1-xN can be grown pseudomorphically on c-face AlN substrates prepared from high quality, bulk crystals. Here, we will report on initial characterization results from deep ultraviolet (UV) light emitting diodes (LEDs) which have been fabricated and packaged from these structures. As reported previously, pseudomorphic growth and atomically smooth surfaces can be achieved for a full LED device structure with an emission wavelength between 250 nm and 280 nm.A benefit of pseudomorphic growth is the ability to run the devices at high input powers and current densities. The high aluminum content AlxGa1-xN (x∼70%) epitaxial layer can be doped n-type to obtain sheet resistances < 200 Ohms/sq/μm due to the low dislocation density. Bulk crystal growth allows for the ability to fabricate substrates of both polar and non-polar orientations. Non-polar substrates are of particular interest for nitride growth because they eliminate electric field due to spontaneous polarization and piezoelectric effects which limit device performance. Initial studies of epitaxial growth on non-polar substrates will also be presented.
Compact and Efficient HFCVD for Electronic Grade Diamond and Related Materials
Authors: Vispute R. , Seiser Andrew , Lee Geun , Dozier Jaurette , Feldman Jeremy , Robinson Lance , Zayac Bradley , Grobicki Alden 
Published: March 2010

AbstractA compact and efficient hot filament chemical vapor deposition system has been designed for growing electronic-grade diamond and related materials. We report here the effect of substrate rotation on quality and uniformity of HFCVD diamond films on 2” wafers, using two to three filaments with power ranging from 500 to 600 Watt. Diamond films have been characterized using x-ray diffraction, Raman Spectroscopy, scanning electron microscopy and atomic force microscopy. Our results indicate that substrate rotation not only yields uniform films across the wafer, but crystallites grow larger than without sample rotation. Well-faceted microcrystals are observed for wafers rotated at 10 rpm. We also find that the Raman spectrum taken from various locations indicate no compositional variation in the diamond film and no significant Raman shift associated with intrinsic stresses. Results are discussed in the context of growth uniformity of diamond film to improve deposition efficiency for wafer-based electronic applications.
Patterned Growth of Long and Clean Boron Nitride Nanotubes on Substrates
Authors: Lee Chee Huei , Xie Ming , Wang Jiesheng , Cook Russell E. , Yap Yoke Khin 
Published: March 2010

AbstractFor the first time, patterned growth of boron nitride nanotubes (BNNTs) on Si substrates has been achieved by catalytic chemical vapor deposition (CCVD). Following the boron oxide chemical pathway and our growth vapor trapping approach, high quality and quantity BNNTs can be produced. Effective catalysts have been found to facilitate the growth of BNNTs, while some critical parameters of the synthesis have also been identified to control the quality and density. The success of patterned growth of high quality BNNTs not only explains the roles of the effective catalysts during the synthesis process, but could also be of technologically important for future device fabrication.
Effects of Carbon Ion on Glassy Carbon Electrode as Chemical Sensor
Authors: Chhay Bopha , Bowman Lynn , Ila Daryush 
Published: March 2010

AbstractGlassy polymeric carbon (GPC) is a material commonly used for making electrodes for cyclic voltammetric (CV) and amperometric measurements. Previous work done at Alabama A&M University (AAMU) has shown that high energy ion beams can be used to improve the physical properties of GPC in general. In this work, we fabricated a glassy polymeric carbon electrode and we used carbon ions to activate it. Surface analyses including Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were performed to compare the changes in surface morphology and structure before and after carbon ion bombardment.
Improvement of Carbon Nanotube Films on SiC formed by Surface Decomposition by Hydrogen Peroxide Purification
Authors: Maruyama Takahiro , Nakahama Fumiya , Naritsuka Shigeya 
Published: March 2010

AbstractWe studied the effects of annealing in H2O2 on the morphologies and structures of “as grown” high-density, well-aligned multi-walled carbon nanotube (MWNT) films formed by surface decomposition of SiC. After annealing in H2O2 solution at 100°C for 3 h, the G/D ratio increased from 1.44 to 2.33, the FWHM of the G band peak became narrower, and a D′ shoulder peak appeared. Transmission electron microscopy (TEM) revealed that the dispersion of MWNTs in dimethylformamide (DMF) solution was improved, suggesting that film impurities were reduced and that damage to the MWNTs was negligible. After annealing for 9 h, the G/D ratio decreased to 1.57, and exfoliation of some MWNTs was observed. In addition, several functional groups such as carboxylic (-COOH) and hydroxyl (-OH) were formed on the surface of the MWNTs. From these results, we conclude that annealing in H2O2 under proper conditions can effectively purify “as grown” MWNT films formed by surface decomposition of SiC.
The Effect of Nanoparticle Coating on the Thermal Conductivity of Nanofluids
Authors: Fornasiero Michael John , Borca-Tasciuc Diana-Andra 
Published: March 2010

AbstractNanofluids are engineered colloidal suspensions of nanometer-sized particles in a carrier fluid and are receiving significant attention because of their potential applications in heat transfer area. Theoretical investigations have shown that the enhanced thermal conductivity observed in nanofluids is due to nanoparticle clustering and networking. This provides a low resistance path to the heat flowing through the fluid. However, the surface coating of the nanoparticles, which is often used to provide stable dispersion over the long term, may act as a thermal barrier, reducing the effective thermal conductivity of the nanofluid. Moreover, nanofluids with the same type of nanoparticles may exhibit different effective thermal conductivities, depending upon the thermal properties and thickness of the coating. In this context, thermal conductivity characterization of well dispersed iron oxide nanoparticles with two different surface coatings was carried out employing the transient hot wire technique. The diameter of the iron oxide core was 35 nm and the coatings used were aminosilane and carboxymethyl-dextran (CMX) of 7nm in thickness. Preliminary results suggest that effective thermal conductivity of CMX coated nanoparticle suspensions is slightly higher than that of aminosilane coated nanoparticles. In both cases, the effective thermal conductivity is higher than that predicted by the Maxwell model for composite media.
Temporal response of the optically generated electric field in InAs/GaAs coupled quantum dots
Authors: Wijesundara Kushal C. , Garrido Mauricio , Ramanathan Swati , Stinaff Eric A. , Bracker Allan S. , Gammon Daniel 
Published: March 2010

AbstractCoupled quantum dots (CQDs) can provide a sensitive probe of the electric field within a device. With non-resonant excitation above the wetting layer (WL) energy, optical generation of an electric field within the CQD structure was observed. By alternating this non-resonant excitation the temporal response of the optically generated electric field was measured. Decay of this field was measured to be on the order of 110-140 μsec whereas the onset of the optically generated electric field was observed to be less than the temporal resolution of our experiment (7.5 μsec). This may provide a means for fast, non-contact, electric field modulation techniques.
Study of Tb-doped Li2O-LaF3-Al2O3-SiO2 Glasses Containing Silver Nanoparticles
Authors: Pan Zhengda , Crosby A , Obadina O , Ueda A. , Aga R. , Mu R. , Morgan S. H. 
Published: March 2010

AbstractTb-doped Li2O-LaF3-Al2O3-SiO2 (LLAS) glasses containing silver were fabricated using melt-quenching technique. Silver nanoparticles (NPs) in glass matrix were confirmed by optical absorption and X-ray diffraction (XRD). The nucleation of silver NPs was controlled by heat-treatment. A broad absorption band peaked at about 420 nm was observed due to surface plasmon resonance (SPR) of the silver NPs. This SPR absorption of silver NPs increases with the time of heat-treatment. Photoluminescence (PL) emission and excitation spectra were measured on Tb-doped LLAS glasses with and without silver NPs. Strong Tb3+ luminescence was observed. For excitation at 325 nm, luminescence of Tb3+ ions increases for the glass containing silver NPs compared to that in the glass without silver NPs. After further heat-treatment at 520 °C for 5 hours, Tb3+ luminescence decreased. Our luminescence results suggest that there are two competitive effects, enhancement and quenching effects, acting on Tb3+ luminescence in the glass containing silver NPs. The enhancement of Tb3+ luminescence is attributed to local field effects due to the excitation of SPR of silver NPs. The quenching effect in the presence of Ag NPs suggests an energy transfer from Tb3+ ions to silver NPs exists, which may provide an additional non-radiative relaxation pathway for the excited Tb3+ ions.
Improvement of the Pt/Graphene Interface Adhesion by Metallic Adatoms for Fuel Cell Applications
Authors: Sen Fatih Gurcag , Qi Yue , Alpas Ahmet T 
Published: March 2010

AbstractThe degradation of carbon supported Pt catalyst used in polymer electrolyte membrane fuel cells is a significant durability problem affected by the agglomeration and detachment of Pt particles from carbon support. The bond between Pt and carbon must be significantly strengthened in order to prevent performance loss. In this work, first principles calculations were carried out in an attempt to understand the role that metallic adatoms play in the enhancement of the Pt/carbon interface adhesion. Metallic adatoms including all first row transition metals as well as Li, Al, Zr, Nb, and Au were inserted into a Pt(111)/graphene interface. The work of separation required to break the interface between Pt-adatom or carbon-adatom bond was then calculated for each configuration, revealing that the carbon-adatom bond was weaker than the Pt-adatom bond, making it easier to break the interface from the carbon-adatom bond side. While Sc, Ti, Zr, and Nb displayed strong binding to both Pt and graphene surfaces, at the Pt/graphene interface, the bond with graphene was weakened. The strength of the Pt-adatom bond was proportional to the amount of charge transferred from the adatom to the graphene. Co, Ni and V were the most promising metals for strengthening the Pt/graphene interface. These metals donated charges that were distributed evenly between carbon and Pt and formed strong covalent bonds with carbon and moderate bonding to Pt.