bluuebunny/crossref_metadata_2025_split huggingface dataset:
Fine Keyed Alignment and Bonding for Wafer-Level 3D ICs
Authors: Lee Sang Hwui , Niklaus Frank , McMahon J. Jay , Yu Jian , Kumar Ravi J. , Li Hui-feng , Gutmann Ronald J. , Cale Timothy S. , Lu J.-Q. 
Published: April 2011

AbstractPrecise wafer-to-wafer alignment accuracy is crucial to interconnecting circuits on different wafers in three dimensional integrated circuits. We discuss the use of fabricated structures on wafer surfaces to mechanically achieve higher alignment accuracy than can be achieved with our existing (baseline) alignment protocol. The keyed alignment structures rely on structures with tapered side-walls that can slide into each after two wafers are “pre-aligned” using our baseline alignment protocol. Results indicate that alignment accuracy is about a quarter micron, well below the one micron alignment accuracy obtained in our baseline alignment procedure using commercial state-of-the-art wafer alignment equipment. In addition to improving alignment, the alignment structures also hinder undesirable bonding-induced misalignment. The keyed alignment structures are also promising for nano-imprint lithography.
Enhancement of Antibody Binding on SiO2Love Wave Sensor Surface using (3-glycidoxypropyl)trimethoxysilane
Authors: Moll Nicolas , Dinh Duy Haï , Pascal Emilie , Déjous Corinne , Pillot Jean-Paul , Bennetau Bernard , Rebière Dominique , Moynet Daniel , Mas Yan , Pistré Jacques 
Published: April 2011

AbstractAn acoustic Love wave immunosensor dedicated to detect biological species such as bacteria, viruses or toxins is described in this paper. We present and analyze results of antibody grafting on the Love wave device using GPTS as coupling agent between SiO2sensor surface and the sensitive biomembrane layer composed of antibodies. Goat anti-mouse (GAM) antibodies at concentrations from 2μg/ml to 50 μg/ml were introduced on the sensor brass cell. The saturation of the sensor surface by antibodies appears at a concentration of 20 μg/ml. The detection threshold of this primary antibody is around 2 μg/ml, and the lowest concentration allowing antigen detection is around 5 μg/ml.
Localized Surface Plasmon Resonance Biosensor Using Ag Nanostructured Films Fabricated by a Reduction Method
Authors: Arai Tomofumi , Kumar Penmetcha K. R. , Awazu Koichi , Tominaga Junji 
Published: April 2011

AbstractIn this paper, an optical biosensor based on the localized surface plasmon resonance (LSPR) of Ag nanostructured films is proposed and demonstrated. The Ag nanostructured films, which are fabricated by the reduction of AgOx thin films, exhibit a strong LSPR at wavelengths around 370 nm in an air environment. The reflectance spectra of the Ag nanostructured film represent that the shift in the LSPR wavelength follows a linear dependence on the refractive index of the surrounding medium. By varying the concentration of streptavidin solution, we demonstrate that the Ag nanostructured films functionalized with thiol and biotin molecules can sensitively detect a binding event between biotin and streptavidin molecules.
Studies on Biosensing Property and Functionalization of In2O3 and Carbon Nanotube Field Effect Transistor
Authors: Ishikawa Fumiaki , Li Chao , Curreli Marco , Thompson Mark E. , Zhou Chongwu 
Published: April 2011

AbstractBiosensing property and functionalization of In2O3 nanowire and carbon nanotube field effect transistor were investigated. Low-density lipoproteins adsorbed on their surface were found to give complementary effects on their electrical property, e.g., enhanced conductance in NW and suppressed conductance in CNT. Prostate specific antigen was selectively detected by functionalizing the sensors with PSA antibody via linker molecules. It was found that the exposure to 0.14 nM (5 ng/ml) PSA increases the conductance of In2O3 nanowire by 1.3 %, while 1.4 nM (50 ng/ml) PSA decreases that of carbon nanotube by 2 %. Additionally, selective functionalization of Indium Tin Oxide thin film and In2O3 NWs with probe DNA single strand was achieved by selectively converting hydroquinone into quinone using electrochemistry, as confirmed by the fluorescence study.
Swelling Behavior of Chitosan Hydrogel in Ionic Liquid-Water Binary System
Authors: Lee Chang Kee , Park Sang Jun , Yoon Seong Gil , Shin Kwang Min , Shin Su Ryon , Gu Bon Kang , Kim Min Sup , Shin Min Kyoon , Kim Yu Jin , Kim Seon Jeong 
Published: April 2011

AbstractThe swelling behavior of chitosan hydrogels in ionic liquid–water binary systems was studied using hydrophilic room-temperature ionic liquids (RTILs) to elucidate the swelling properties of chitosan hydrogels. It was confirmed that chitosan hydrogels are much stiffer after immersing in a pure RTIL because the water existing inside the chitosan polymer network is extracted into the RTIL. The pH of the binary system changes when the RTIL is in contact with water. The chitosan hydrogels were fully dissociated at a 90% water content in the BMI-BF4-water binary system. The equilibrium binary system content behavior of the chitosan hydrogels depended upon the amount of free water present. The water behavior in a pure RTIL was examined using differential scanning calorimetry.
Redox Reactions of Bio Molecule for Nano-bio Battery
Authors: Shin Kwang Min , Park Sang Jun , Yoon Seong Gil , Lee Chang Kee , Shin Su Ryon , Shin Min Kyoon , Gu Bon Kang , Kim Min Sup , Kim Seon Jeong 
Published: April 2011

AbstractMetal oxide nanoparticles within the protein ferritin can act as an energy storage source in nano-bio batteries containing ferrous ferritin and a reconstituted ferritin cage containing different inorganic elements, such as Co, Mn, Ni, and Pt. These components were introduced as two ferritin half-cells with different redox potentials existing between the ferrous ferritin and the reconstituted ferritin. The reduction of ferritin was analyzed in a solution containing 3-[N-morpholino] propanesulfonic acid buffer and oxidized methyl viologen using cyclic voltammetry. The reduction and oxidation peaks of the methyl viologen occurred at potentials of −300 and −100 mV, respectively, and the reduction and the oxidation peaks of the released Fe occurred at potentials of −300 and −100 mV, respectively. The reduction of ferritin was influenced by the pH of the ferritin solution.
Mesostructured WO3 as a sensing material for NO2 detection
Authors: Rossinyol E. , Prim A. , Pellicer E. , Arbiol J. , Peiró F. , Cornet A. , Morante J. R. , Solovyov L. A. , Tian B. , Bo T. , Zhao D. 
Published: April 2011

AbstractNanostructured tungsten oxide synthesized from SiO2 templates (SBA-15 and KIT-6) has been used for NO2 gas sensing. Chromium has been added as catalytic additive to WO3 in order to enhance sensor response. Several techniques have been used for identifying both additive location in the tungsten oxide matrix and its oxidation state. Raman spectroscopy confirmed the presence of terminal chromium-oxygen bonds at the material surface. Besides, X-ray photoelectron spectroscopy showed chromium peaks attributable to Cr(III) species. Electrical behavior of pure WO3 has found to be highly dependent on the nanostructure type, i. e. 2D SBA-15 and 3D KIT-6 replicas. Chromium addition diminishes response time and improves sensor response at low NO2 concentrations. Electrical differences due to WO3 nanostructure disappears as a result of additive introduction in the material.
Accelerated Chemical Reactions for Lab-on-a-Chip Applications Using Electrowetting-Induced Droplet Self-Oscillations
Authors: Aizenberg Joanna , Krupenkin Tom , Kolodner Paul 
Published: April 2011

AbstractThis paper summarizes the results of experimental investigations of the feasibility of applying electrowetting-induced droplet self-oscillations to induce rapid mixing of small quantities of liquids. The concept was tested using video microscopy to monitor the mixing of passive colored dyes, of spatially-separated reactants that change color upon reaction, and of fluorescent DNA oligomers whose light emission vanishes upon hybridization with appropriately-functionalized complementary DNA strands. Droplet self-oscillation was found to increase the rate of mixing by factors ranging from 15 to 100 as compared with the rate of passive diffusion in undisturbed droplets. This demonstrates that self-oscillation-induced mixing is a viable method for substantially enhancing the speed of chemical reactions in general, and biochemical assays in particular, when performed in small volumes of liquids.
Sub-micron Emission and Charge Transport Modification of ZnO
Authors: Wang Ran Shi , An Jin , Xu Jian Bin , Ong Hock Chun 
Published: April 2011

AbstractAlthough oxide/semiconductor junctions have long been studied in the areas of microelectronics, new phenomena and interests arise from time to time. In particular, in the realm of nanotechnology where materials are shrunk at a length scale of nanometers, the role of heterojunctions in controlling the overall characteristics of the system will become more and more important. In here, we have developed a technique to modify the light emission and charge transport properties of oxide/ZnO system at different dimensionalities. Providing an oxidic overlayer (AlOx) is present on ZnO, a focused electron beam can be used to locally modify optical and electrical properties of ZnO. Under electron bombardment, we find the emission profile of ZnO gradually changes from green-yellow emitting into ultra-violet emitting while the conductivity decreases by more than two orders of magnitude at the same time. Well-defined sub-micron patterns with tunable optical and electrical properties can be fabricated on 2-D ZnO films and 1-D nanoribbons by carefully controlling the dose and energy density of the electron beam. Since ZnO is a versatile material, we believe our studies will shed light on the further use of ZnO in frontier technologies such as gas sensing, display technology, catalysis, spintronics, etc.
Sub-Second Humidity Sensing based on Nanostructured Narrow-Bandpass Optical Filters
Authors: Steele John Jeremiah , van Popta Andy C. , Hawkeye Matthew M. , Sit Jeremy C. , Brett Michael J. 
Published: April 2011

AbstractAn optical-based humidity sensor with a sub-second response time was fabricated from a nanostructured titanium dioxide thin film. A refractive index profile designed to yield a narrow-bandpass optical interference filter was obtained through nanoscale porosity variations produced by glancing angle deposition (GLAD). Under varying humidity conditions the transmittance spectrum of the filter shifts due to effective index changes of the porous structure resulting from adsorption/desorption of water vapor. In the following we will show that this device is highly sensitive, exhibits minimal hysteresis, and is extremely fast. The adsorption and desorption response times were measured to be 270 ms and 160 ms, respectively.
Nanostructured (Sn,Ti, Nb)O2 Solid Solution for Hydrogen Sensing
Authors: Carotta Maria Cristina , Benetti Michele , Guidi Vincenzo , Gherardi Sandro , Malagu' Cesare , Vendemiati Beatrice , Martinelli Giuliano 
Published: April 2011

AbstractA novel co-precipitation route for preparing pure nanograined (Ti, Sn, Nb)O2 solid solution has been accomplished. The solid solution containing the three elements has been synthesized with the molar ratios for Sn:Ti:Nb 100:42:5. Electron microscopy and X-ray diffraction have been adopted to observe the morphology, the crystalline structure and the mean grain radius. Calcining at 550, 650, 850 or 1050 °C for 2h, showed rutile-like single-phase.The prepared powders have been deposited to produce gas sensors in form of thick films through screen-printing technology. SEM micrographs of both powders and films showed regularly-shaped particles with grain dimensions at nanometric level, the nanostructure being maintained up to 1050°C. The sensors have been tested with different reducing gases showing large responses to hydrogen and good selectivity.
Thermoreflectance Measurements of the Temperature Distributions in Laser Diodes with Non Injected Facet
Authors: Ochalski Tomasz , Pierscinska Dorota , Pierscinski Kamil , Malag Andrzej , Jasik Agata , Kozlowska Anna , Bugajski Maciej 
Published: April 2011

AbstractNon Injected Facet (NIF) lasers were developed to increase catastrophic optical damage level of the devices. In this work we present the analysis of the laser diodes (LD) front facet temperature distribution. Micro-thermoreflectance technique is used to perform a detailed temperature maps of the operating LDs. Such a technique gives us temperature maps with a spatial resolution better than 1mm and area of the maps covers active region and substrate crystal. We demonstrate micro thermoreflectance as a perfect tool to determine real temperature distribution of the operating laser diode front facet. Examined series of LDs under investigation have been made in two different ways. Major point of this work is comparison of the front facet temperature distribution of devices with and without injected facets. We compare temperature value and temperature distribution in the waveguide region in both types of the LDs. In our experiment NIF laser diodes exhibit facet temperatures increased by a factor of 1.4.
Thermal Stability of Ru Gate Electrode on HfSiO Dielectric
Authors: Frohlich Karol , Espinos Juan Pedro , Vincze Andrej , Tapajna Milan , Husekova Kristina 
Published: April 2011

AbstractWe have investigated advanced MOS structures containing Ru gate electrode, HfxSi1-xOy dielectric film and Si substrate. The Ru gate electrode was grown by MOCVD at 300 °C. The MOS structures were annealed for 30 min in forming gas and nitrogen at temperatures up to 550 °C. Capacitance-voltage measurements showed important shift of the flat band voltage of the Ru/ HfxSi1-xOy/Si gate stack after treatment at 550 °C. X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), reflection electron energy loss spectroscopy (REELS) and secondary ion mass spectroscopy (SIMS) were used to analyze interface between ruthenium and high-k dielectric film. Based on the analysis we were able to build up energy-band alignement for the Ru/ HfxSi1-xOy interface. We observed that the energy-band structure of the Ru/HfxSi1-xOy interface remains stable upon annealing in forming gas up to 550 °C. Presence of hydrogen revealed by SIMS can account for compensation of negative charges in HfxSi1-xOy during thermal treatment.
Preparation and Characterization of Rare Rarth Scandate Thin Films as an Alternative gate dielectric
Authors: Wagner Martin , Heeg T. , Schubert J. , Lenk St. , Zhao C. , Caymax M. , Mantl S. 
Published: April 2011

AbstractRare earth scandate thin films (GdScO3 and DyScO3) were investigated with respect to future high-k applications. They were deposited on (100) silicon substrates using either pulsed laser deposition (PLD) or electron beam evaporation. The investigation of the films was done by means of Rutherford backscattering spectrometry, high-temperature X-ray-diffractometry, X-ray reflectometry, spectroscopic ellipsometry, transmission electron microscopy (TEM) and atomic force microscopy. For the electrical characterization capacitor stacks were prepared. Both materials show very promising characteristics independent from the deposition technique used. The films are stoichiometric and amorphous and exhibit a smooth surface (roughness RMS < 1 Å). The amorphous phase is stable up to 1000°C. The electrical characterization revealed featureless C-V-curves with a small hysteresis. From CET plots (CET = capacitance equivalent thickness) k-values between 20 and 23 could be extracted. The electron beam evaporation produces films with a better homogeneity and a thinner interfacial silicon dioxide and therefore a smaller CET value as confirmed by TEM. The leakage current density of the film with CET = 1.5 nm was as low as 7.7x10-4A/cm2.
Metal Transport and Loss in Hafnium and Lanthanum Aluminate Films on Si Hampered by Thermal Nitridation
Authors: Miotti Leonardo , Driemeier Carlos , Tatsch Felipe , Radtke Cláudio , Baumvol Israel Jacob Rabin , Vincent Edon , Hugon Marie Christine , Agius Bernard 
Published: April 2011

AbstractThe effects on metal transport and loss in Hf and La aluminate films deposited on Si induced by rapid thermal annealing at 1000°C were investigated. Decomposition of HfAlO films on Si during rapid thermal annealing was reveled by the decrease of the Hf and Al contents. Metal loss from LaAlO/Si structures was also observed following annealing in vacuum, while strong metal transport and interfacial reaction were induced by annealing in a O2 containing atmosphere. These instabilities were hampered by means of post deposition thermal nitridation in NH3 at temperatures lower than 1000°C performed before the rapid thermal annealing step. The role of nitridation is discussed in terms of the N profiles in the nitrided structures.
A Comparison of Electrical and Physical Properties of MOCVD Hafnium Silicate Thin Films Deposited using Various Silicon Precursors
Authors: Jamison Paul , Copel M , Chudzik M , Frank M M , Linder B P , Jammy R , Zhu W 
Published: April 2011

AbstractWe report on the impact of silicon precursor choice on the electrical and physical properties of hafnium silicate (HfSiO) gate dielectrics deposited by metalorganic chemical vapor deposition (MOCVD). Hafnium tert-butoxide (HTB) was used as the hafnium source and silane and tetraethylorthosilicate (TEOS) were used as silicon sources. Elemental depth profiles were measured with sub-nm resolution using medium energy ion scattering (MEIS). For Hf-rich films employing TEOS as the silicon precursor, relatively little Si is incorporated at the bottom interface compared with the top; while using SiH4, a more uniform Si distribution is achieved. These physical differences are then correlated with the electrical performance of transistors employing polysilicon gate electrodes. Transistors incorporating SiH4 based HfSiOx gate dielectrics with low silicon concentrations have lower C-V hysteresis and higher high field mobility than those using TEOS based dielectrics. We demonstrate polysilicon gated transistors which have an electrical thickness in inversion (Tinv) that can be scaled to ~21 A with good leakage reduction when employing nitrided bottom interface layers in combination with optimized HfSiOx dielectrics. Reduced silicon concentration resulted in a lower inversion thickness for a fixed physical thickness contributing to the higher drive currents in transistors.
Processing Impact on Electrical Properties of Lanthanum Silicate Thin Films
Authors: Jur Jesse Stephen , Lichtenwalner Daniel J. , Inoue Naoya , Kingon Angus I. 
Published: April 2011

AbstractThe consequence of tungsten metal purity on the electrical properties of an annealed MOS gate stack with a lanthanum silicate gate dielectric has been investigated. Optimization of the electrical and physical properties of a device with any given dielectric requires the proper choice of metal gate electrode and capping layer. This study is intended to show the importance of tungsten processing optimization and subsequent effects on the equivalent oxide thickness, fixed charge, and density of interface states of La-Si-O gate dielectric MIS devices. In the experiment, La-Si-O films of physical thickness of 1.6 nm were deposited on a Si substrate, subsequently depositing TaN as the gate electrode and W as a capping layer. A post metallization anneal in flowing nitrogen at 1000°C for short times resulted in widely different measured properties of the MIS devices, dependent on the quality of the tungsten deposited. XRD and SIMS profiles of the gate stacks showed a clear relationship between concentration of oxygen and processing of the tungsten. A 1000°C, 10 sec anneal resulted in an EOT change from 1.1 nm to 2.2 nm on gate stacks with low and high oxygen concentration in the tungsten, respectively. Defect densities decreased with increased anneal temperature and time, and annealing with low oxygen-concentration tungsten resulted in higher effective fixed charge. SIMS data suggests that oxygen in the tungsten diffuses to the Si/La-Si-O interface through the TaN electrode, resulting in the observed differences in the defect densities and EOT.
Why phase-change Materials work: An EXAFS Investigation of Ge-Sb-Te Alloys
Authors: Paesler Michael , Agarwal S.C. , Lucovsky G. , Paesler M.A. , Taylor P.C. 
Published: April 2011

AbstractStudies of amorphous (a-) semiconductors have been driven by technological advances as well as fundamental theories. Observation of electrical switching, for example, fueled early interest in a-chalcogenides. More recently a-chalcogenide switching has been applied quite successfully to DVD technology where the quest for the discovery of better-suited materials continues. Thus, switching provides researchers today with an active arena of technological as well as fundamental study. On the theoretical front, bond constraint theory and rigidity theory provide a powerful framework for understanding the structure and properties of a-materials. Applications of these theories to switching in a-chalcogenides holds the promise of finding the best composition suited for switching applications. Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy is an ideally suited technique to investigate the switching properties of these materials. Results of previous EXAFS experiments will be presented and viewed through the lens of bond constraint theory and rigidity theory.
OUM Nonvolatile Semiconductor Memory Technology Overview
Authors: Hudgens Stephen J. 
Published: April 2011

AbstractOUMTM (Ovonic Unified Memory), also called PCRAM (phase-change RAM) or CRAM (chalcogenide RAM) is a nonvolatile semiconductor memory technology being developed by Ovonyx, Inc. in a number of industrial joint development programs. OUM technology is based on an electrically initiated reversible amorphous to crystalline phase change process in multi-component chalcogenide alloy materials similar to those used in rewriteable optical disks. Fundamental processes in OUM devices, manufacturing technology, and progress towards commercialization of the technology will be reviewed.
Impact of Material Crystallization Characteristics on the Switching Behavior of the Phase Change Memory Cell
Authors: Gille Thomas , Goux Ludovic , Lisoni Judit , De Meyer Kristin , Wouters Dirk J. 
Published: April 2011

AbstractThe impact of material crystallization characteristics on the switching behavior of phase change memory cells has been investigated using finite element simulation. Both a conventional vertical cell and a horizontal line cell have been analyzed, using the widely used Ge2Sb2Te5 (GST) which is a nucleation dominated material for the vertical cell, and Ag5.5In6.5Sb59Te29 (AIST) which is a growth dominated material for the horizontal cell. Nucleation and growth models were implemented for both materials. Both RESET and SET program cycles were simulated. From these simulations, it was shown that the crystallization models gave realistic results for switching voltages, currents and switching times for the two different cell types. It is found that for GST, both nucleation (at lower voltages) and growth (at higher voltages) can play an important role in the crystallization. However, for AIST, crystal growth from non-amorphized crystal regions dominated over nucleation for all program conditions. The high growth rate of AIST moreover is shown to allow much shorter SET times in the line cell compared to that of GST in the vertical cell.