bluuebunny/crossref_metadata_2025_split huggingface dataset:
When should a diagnosis of influenza be considered in adults requiring intensive care unit admission? Results of population-based active surveillance in Toronto
Authors: Kuster Stefan P , Katz Kevin C , Blair Joanne , Downey James , Drews Steven J , Finkelstein Sandy , Fowler Rob , Green Karen , Gubbay Jonathan , Hassan Kazi , Lapinsky Stephen E , Mazzulli Tony , McRitchie Donna , Pataki Janos , Plevneshi Agron , Powis Jeff , Rose David , Sarabia Alicia , Simone Carmine , Simor Andrew , McGeer Allison 
Published: July 2011

Abstract
Introduction
There is a paucity of data about the clinical characteristics that help identify patients at high risk of influenza infection upon ICU admission. We aimed to identify predictors of influenza infection in patients admitted to ICUs during the 2007/2008 and 2008/2009 influenza seasons and the second wave of the 2009 H1N1 influenza pandemic as well as to identify populations with increased likelihood of seasonal and pandemic 2009 influenza (pH1N1) infection.

Methods
Six Toronto acute care hospitals participated in active surveillance for laboratory-confirmed influenza requiring ICU admission during periods of influenza activity from 2007 to 2009. Nasopharyngeal swabs were obtained from patients who presented to our hospitals with acute respiratory or cardiac illness or febrile illness without a clear nonrespiratory aetiology. Predictors of influenza were assessed by multivariable logistic regression analysis and the likelihood of influenza in different populations was calculated.

Results
In 5,482 patients, 126 (2.3%) were found to have influenza. Admission temperature ≥38°C (odds ratio (OR) 4.7 for pH1N1, 2.3 for seasonal influenza) and admission diagnosis of pneumonia or respiratory infection (OR 7.3 for pH1N1, 4.2 for seasonal influenza) were independent predictors for influenza. During the peak weeks of influenza seasons, 17% of afebrile patients and 27% of febrile patients with pneumonia or respiratory infection had influenza. During the second wave of the 2009 pandemic, 26% of afebrile patients and 70% of febrile patients with pneumonia or respiratory infection had influenza.

Conclusions
The findings of our study may assist clinicians in decision making regarding optimal management of adult patients admitted to ICUs during future influenza seasons. Influenza testing, empiric antiviral therapy and empiric infection control precautions should be considered in those patients who are admitted during influenza season with a diagnosis of pneumonia or respiratory infection and are either febrile or admitted during weeks of peak influenza activity.
Universalism in One Country: La Protection Sociale over the Longue Durée
Authors: Adams Thomas M. 
Published: July 2011

The republican model of social rights in France invokes the heritage of the Revolution. The meaning of this legacy is complex for several reasons. The articulation of rights during the Revolution took different forms in theory; practice fell short of aspirations. The political legacy of social rights drew strength from Enlightenment sources and from older antecedents such as the Erasmian humanism of Juan Luis Vives. Tracing the evolution of social rights in France since the Revolution, the historian encounters continuities both in the statement of principles and in the obstacles to their realization. At the same time, new players contend with challenges unforeseen by the leaders of the first French republic.
Le modèle républicain de la protection sociale en France s'inscrit dans l'héritage de la Révolution. Or, il faut préciser d'abord que le moment de sa conception n'est pas établi et qu'une recherche de paternité nécessiterait une approche historique de longue durée. Le fons et origo du droit social remonte au siècle des Lumières et dans une tradition plus lointaine que l'on peut qualifier d'érasmienne. Quand on trace les réalisations du droit social depuis l'époque révolutionnaire, on retrouve les qualités et les défauts de son ascendance. D'autre part, il faut reconnaître les apports multiples et les trébuchements d'une société et d'un état qui ne se sont pas révélés révolutionnaires sans réserve. Les réticences et les démarches nouvelles de la politique sociale contemporaine font état d'un monde imprévisible aux militants de 1789, 1793 et 1795. Pourtant, l'appel des droits universels a maintenant un retentissement mondial.
Interference in the autoDELFIA® hAFP immunoassay and effect on second-trimester Down's syndrome screening
Authors: Mannings Leanne , Trow Sandy , Newman Janet , Nix Barry , Evans Carol 
Published: July 2011

Background Falsely decreased serum alphafetoprotein (AFP) concentrations are reported in the autoDELFIA® hAFP immunoassay due to interference by complement. AFP is measured, using this assay, as part of second-trimester and integrated Down's syndrome screening tests. Decreased AFP concentrations increase the calculated risk of Down's syndrome; therefore falsely low AFP, due to assay interference, may artificially increase a patient's risk, and have the potential to cause false screen positive results. It was our aim to assess whether negative interference in the autoDELFIA® hAFP assay was a cause of very low AFP concentrations, and to examine the effect of falsely decreased concentrations on the calculated risk of Down's syndrome. Methods Three hundred and twenty-three sequential Down's screening serum samples with very low serum AFP concentration (<15 KU/L) using the autoDELFIA® hAFP immunoassay were selected and AFP re-measured using the E170 AFP immunoassay. Results Interference was detected in nine samples (from eight patients) on the basis of discordant AFP concentrations. The interference decreased following storage of samples at 4°C to deplete complement. Use of the falsely low AFP concentrations to calculate risk of Down's syndrome resulted in significantly increased calculated risk compared with complement depleted results. Conclusions Laboratories should be aware that falsely low AFP concentrations due to complement interference may be obtained using the autoDELFIA® hAFP immunoassay. We have shown that falsely low AFP concentrations increase the calculated risk of Down's syndrome. This is a potential cause of false Down's syndrome screen positive results.
Bacterial STDs and Perceived Risk Among Sexual Minority Young Adults
Authors: Kaestle Christine E. , Waller Martha W. 
Published: July 2011

CONTEXT: Most sexual health interventions focus on heterosexual sexual risk behavior. Health practitioners face a lack of information about the sexual health of sexual minority young adults (aged 18–26).
METHODS: Three indicators of sexual minority status (identity, behavior and romantic attractions) were assessed in 10,986 young adults who participated in Wave 3 of the National Longitudinal Study of Adolescent Health (2001–2002). Logistic regression analyses examined associations between these indicators and individuals’ perceived risk for STDs and actual infection with STDs. Data from the 1,154 respondents who had current or recent bacterial STDs were investigated further to determine whether they had underestimated their risk.
RESULTS: Outcomes varied by sexual minority status indicator and by sex. Bisexual females had significantly higher odds of STDs than heterosexual females (odds ratios, 1.4), and females attracted to both sexes had significantly higher odds of STDs than females attracted only to males (1.8). In contrast, none of the sexual minority status indicators predicted STDs for males. Among respondents who had an STD, females who reported only same‐sex sexual relationships were more likely to believe they were at very low risk for STDs than were females reporting only opposite‐sex sexual relationships (17.2); homosexual females had a higher likelihood of this outcome than heterosexual females (19.7).
CONCLUSIONS: Health practitioners need to assist sexual minority young adults, particularly females, in under‐standing their risk for STDs and in taking safer‐sex precautions.
Crystallization Behavior of Hf-rich Aluminates and Influence on Film Dielectric Properties
Authors: Climent M. , Crivelli B. , Righini G. , Alberici S. , Alessandri M. , Elbaz A. C. , Pavia G. , Wiemer C. 
Published: July 2011

ABSTRACTIn this study, the investigation of crystallization behaviour of Hf-rich aluminate is presented. Different alloys were deposited by ALCVD™ with composition ranging between 16 and 47 Al2O3 mol%. Post-deposition annealings were carried out in single or sequential mode using purified N2 at atmospheric pressure. Process temperature and time were varied from 700°C to 900°C and from 1' to 30' respectively. Upon these conditions, film thermal evolution was observed without any relevant increasing of in interface layer and any change in material composition. Measurements on 20 Al2O3 mol% films evidenced that thermal treatments up to 800°C promoted initial shrinking in thickness and material densification. Above 900°C, all considered aluminates were found to crystallize in orthorhombic phase maintaining original alloy composition. The higher the alumina content, the lower the grain size, the higher the crystallites density. Stability of orthorhombic crystalline structure was demonstrated upon single prolonged annealing up to 30' and upon sequential processes. In correspondence with film crystallization, enhancement of dielectric constant was detected with an increasing trend upon hafnia content. For 20 Al2O3 mol% aluminate, change in k form 19 to 40-45 was observed together with limited degradation in conduction and breakdown characteristics.
Infrared Absorption Study of HfO2 and HfO2/Si Interface Ranging from 200cm−1 to 2000cm−1
Authors: Tomida Kazuyuki , Shimizu Haruka , Kita Koji , Kyuno Kentaro , Toriumi Akira 
Published: July 2011

ABSTRACTIn this paper, we report infrared absorption studies of HfO2, HfO2/Si interface and Hf(1−x)SixOy. Both HfO2 crystallization and SiO2 formation at the interface can be clearly detected in the absorption spectra in the far and middle infrared regions, respectively. By measuring the intensity change and the peak shift of infrared absorption spectra as functions of annealing temperature and time together with XRD patterns, we discuss a difference of the amorphous structure between HfO2 and SiO2, and also show an evolution of HfO2 crystallization in the monoclinic phase up to 1000 °C. On the other hand, it is shown that the interfacial SiO2 layer is qualitatively similar to the thermally grown SiO2. Furthermore, it is demonstrated that a Si incorporation into HfO2 film significantly changes the IR absorption spectra, and that the Hf(1−x)SixOy film is phase-separated with an appearance of modified monoclinic phase by higher temperature annealing.
An Advanced High-k Transistor Utilizing Metal-Organic Precursors in an ALD Deposition of Hafnium Oxide and Hafnium Silicate with Ozone as Oxidizer
Authors: Gutt J. , Brown G.A. , Senzaki Yoshi , Park Seung 
Published: July 2011

AbstractThe International Technology Roadmap for Semiconductors (ITRS) has projected that continued scaling of planar CMOS technology to the 65nm node and beyond will require development of high-k films for transistor gate dielectric applications to allow further scaling of overall device sizes according to Moore's Law [1]. Researchers have recently been studying hafnium-based high-k dielectrics as an alternative to SiO2 [2]. The method of deposition of these films has been found to impact the applicability of the films for both low standby power and high performance applications [3]. Atomic Layer Deposition (ALD) has been among the more widely studied deposition techniques for these films, but previous work has emphasized ALD utilizing inorganic precursors [4]. In this paper, we shall describe a process in which hafnium oxide and hafnium silicate films were deposited from alternating pulses of volatile metal-organic Hf/Si liquid precursors and ozone on 200mm diameter Si substrates using a single wafer ALD system. Electrical characterization of the films is presented, including equivalent oxide thickness (EOT), gate leakage, and electron mobility data, showing an achievement of EOT's ranging from 1.19 to 1.69 nm with high field mobilities from 74% to more than 90% of that of SiO2 (2.1 nm film), and Jg in the range of 80mA to 3 A/cm2.
Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance
Authors: Bersuker G. , Sim J. H. , Young C. D. , Choi R. , Lee B. H. , Lysaght P. , Brown G. A. , Zeitzoff P. M. , Gardner M. , Murto R. W. , Huff H. R. 
Published: July 2011

AbstractElectron traps in ALD and MOCVD HfO2 and HfSiO high-k dielectrics were investigated using both conventional DC and pulse measurements. It was found that the traps in the gate stack could be associated with defects of different activation energies and capture cross-sections. This points to potentially different origins of the electrically active defects, which can be either intrinsic or process-related. Structural non-uniformity of the high-k film, associated with grain formation and phase separation, may lead to variation of electrical properties of the gate dielectric along the transistor channel. Effects of such dielectric non-uniformity, as well as electron trapping, on the measured transistor mobility were evaluated.
Leakage Current Behavior in CaZrO3 Thin Films for High-k Applications
Authors: Yu Ting , Zhu Weiguang , Chen Xiaofeng , Lu Yuekang 
Published: July 2011

ABSTRACTElectrical properties and leakage current mechanisms of perovskite CaZrO3 dielectric thin films have been studied in this paper. CaZrO3 thin films were deposited on Pt/SiO2/n-Si substrate by the sol-gel wet chemical technology, and then annealed at temperatures ranging from 550 to 700 °C for 1h in O2. The films with platinum (Pt) top and bottom electrodes were characterized with respect to the leakage current as a function of temperature and applied voltage. The CaZrO3 film annealed at 600 °C was amorphous and showed good electrical properties with a dielectric constant of about 15 and leakage current density of 10−8 A/cm2 at high applied electrical field of 2.5 MV/cm. The data can be interpreted via a Schottky barrier model. The conduction mechanism at low electric fields is due to Ohmic conduction. On the other hand Schottky mechanism dominates at the intermediate fields. The high dielectric constant, low leakage current density and high breakdown strength suggest that the CaZrO3 thin film is a promising candidate for high-k applications.
Influence of Pre-Oxidation of an Ir Film on Chemical Composition and Crystal Property of a PZT Film Deposited on the Ir Film by Sputtering
Authors: Horita Susumu , Shoga Makoto 
Published: July 2011

ABSTRACTWe investigated the influence of pre-oxidation of an Ir film as a bottom electrode on the chemical composition and crystal property of the PZT film deposited on it by RF sputtering, changing the sputtering target composition ratio Zr/Ti to be 20/80, 52/48 or 80/20. The Ir film deposited on a thermally oxidized Si substrate was pre-oxidized at 600°C for 20 min in the O2 gas of 10 Pa. The XRD patterns showed a strong PbO(101) peak from the PZT film on the oxidized Ir film for Zr/Ti = 52/48, but no PbO peak from the film on a no oxidized Ir film. The RBS measurement showed that the film composition ratio of Pb/(Zr+Ti) on the pre-oxidized Ir film was much larger than that on the no oxidized Ir film. For Zr/Ti=20/80, the same tendency was observed. However, for Zr/Ti=80/20, the chemical composition of the PZT film on the pre-oxidized Ir film was almost equal to that without oxidation.
MOCVD Processes for Electronic Materials Adopting Bi(C6H5)3 Precursor
Authors: Bedoya C. , Condorelli G. G. , Anastasi G. , Lisoni J. , Wouters D. , Fragalà I.L. 
Published: July 2011

ABSTRACTMOCVD of Bi2O3 has been investigated using Bi(C6H5)3 precursor. The decomposition products obtained at various deposition temperatures were determined using in situ FT-IR analysis. Benzene was the main product formed in the heterogeneous decomposition of Bi(C6H5)3 at temperature lower than 450°C, while above 450°C typical products of the combustion of aromatic ring were observed. The effect of oxygen on the film composition and its role in the decomposition process was evaluated by XPS depth profiles. Moreover, preliminary studies on the initial step of the film deposition suggested that Bi2O3 nucleation rate depends upon precursor partial pressure.
Effect of La doping on the structural and electrical properties of SrBi2Ta2O9
Authors: Nora Ortega , Bhattacharyya S. , Bhattacharya P. , Das R.R. , Katiyar R.S. 
Published: July 2011

ABSTRACTThe effect of anthanum substitution (0-20%) on phase formation, structural evolution and electrical properties of SrBi2Ta2O9 (SBT) ceramics were investigated. X-ray diffraction studies revealed that phase pure SBT bulk samples can be synthesized with lanthanum doping without any phase segregation. Raman spectroscopy was used to understand the lattice vibrational characteristics of La substituted SBT compound. The ferroelectric soft mode at 27 cm−1 was shifted towards the lower frequencies at room temperature with increase in La concentrations. The octahedral stretching mode (O-Ta-O) did not influenced by La substitution in SBT. The x-ray photoemission spectroscopy measurements showed the decrease of binding energy of Bi 4f core levels (5/2 and 7/2) upon La substitution in SBT. The dielectric constant was increased from 120 to 190 up to 10% La doping and decreased with further increase in La concentration.
Investigations of PbxSr1-xTiO3 Thin Films and Ceramics for Microelectronic Applications
Authors: Jain M. , Yuzyuk Yu.I. , Katiyar R.S. , Somiya Y. , Bhalla A.S. , Miranda F.A. , VanKeuls F.W. 
Published: July 2011

ABSTRACTWe have investigated electrical and optical properties of the lead strontium titanate {(PbxSr1-x)TiO3 or PST} ceramic and dielectric properties of the thin films of PST at low and high frequencies. (PbxSr1-x)TiO3 compositions with × ≤ 0.4 are paraelectric at room temperature and exhibit ferroelectric phase transition below room temperature. Only one phase transition in the PST system (compared to three in BaxSr1-xTiO3) was recorded. The studies indicated that PST has potential for tunable microwave devices in the paraelectric phase. In the present studies, Pb0.3Sr0.7TiO3 (PST30) ceramic was prepared by the conventional solid-state reaction method and thin films of PST were prepared by sol-gel technique. Structural, microstructural, dielectric, and Raman measurements were performed on these samples. Sharp phase transition was observed in case of the ceramic by dielectric and Raman measurements at 283 K. Raman measurements revealed well-pronounced soft-mode behavior below the Curie temperature in PST ceramic. The thin film of PST deposited on lanthanum aluminate substrate was highly (100) oriented and showed dielectric maxima at ∼280 K, which was close to that in case of the bulk. Eight element coupled micro-strip phase shifters (CMPS) was fabricated on the PST film and tested in the frequency range of 15-17 GHz. The average figure of merit of 49 °/dB for PST30 film in the Ku band at 533 kV/cm suggests the potentiality of these films for high frequency tunable dielectric devices.
Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV
Authors: Nakajima Kazuaki , Nakazawa Hiroshi , Sekine Katsuyuki , Matsuo Kouji , Saito Tomohiro , Katata Tomio , Suguro Kyoichi , Tsunashima Yoshitaka 
Published: July 2011

ABSTRACTIn this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.
On the Nature of Weak Spots in High-k Layers Submitted to Anneals
Authors: Pétry J. , Vandervorst W. , Richard O. , Conard T. , DeWolf P. , Kaushik V. , Delabie A. , Van Elshocht S. 
Published: July 2011

ABSTRACTIn the path to the introduction of high-k dielectric into IC components, a large number of challenges have still to be solved. Some of the major issues concern the low mobility of carriers and the reliability of the devices. Trapped charges in the stack have been identified as being the cause of these issues. With this in mind, we used Conducting Atomic Force Microscopy, combined with physical analysis to understand the nature of these charges. In this contribution, we have studied the uniformity of thin HfO2 layers, with and without anneal. The Conducting Atomic Force microscopy measurements show spots of higher conductivity. Recording local IV's in those ‘weak’ spots suggests that they consist of positive charge. On the other hand, XPS and ToFSIMS analysis show a diffusion of the interfacial SiO2 upwards into the high-k layer. Finally, the comparison of samples with differing high-k material and crystallinity indicates a strong correlation between the weak spots and the presence of silicon in the film.
Nitridation of Hafnium Silicate Thin Films
Authors: Chatham Hood , Senzaki Yoshi , Bailey Jeff , Nieveen Wesley 
Published: July 2011

ABSTRACTWe discuss the nitridation of ALD-deposited hafnium silicate films by exposure to atomic nitrogen generated in a remote nitrogen plasma. Nitrogen concentration [N] as measured by X-ray photoelectron spectroscopy (XPS) is determined as a function of the nitridation temperature and other process conditions. Nitrogen concentrations up to 13.7 atomic % were achieved.
Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O2, N2O, H2O, O2 plasma, or N2O plasma, and Hf (IV) t-butoxide
Authors: Bhandari Harish B. , Chen Ping , Klein Tonya M. 
Published: July 2011

ABSTRACTHafnium oxide (HfO2) and silicon containing hafnium oxide (HfSixOy) thin films were deposited by thermal and plasma enhanced chemical vapor deposition (PECVD) using Hf (IV) t-butoxide and either O2, N2O, H2O, O2 plasma or N2O plasma as an oxygen source. Silane, 2% in He, was added to the reactant gas mixture to incorporate Si. Deposition rate and composition dependence on substrate temperature was studied and the deposited films were annealed in air for 30 min at 1100°C to observe changes in crystallinity and composition. Silicon incorporation was higher for H2O deposited HfSixOy films (5 at.%) than O2 and N2O deposited films (2 at.%) and had a lower deposition rate. Arrhenius plots reveal a non-simplistic reaction scheme since higher temperatures result in lower deposition rates due to precursor desorption. XRD indicate that as-deposited films using H2O are amorphous while O2 and N2O deposited films are microcrystalline with a monoclinic phase.