bluuebunny/crossref_metadata_2025_split huggingface dataset:
Advancing the Pharmacy Practice Model: Survey of New Practitioner Attitudes and Opinions
Authors: Hertig John B. , Kelley Katherine A. , Jordan Trisha A. , Tubbs Crystal R. , Casper Kristin A. , Nahata Milap C. 
Published: March 2011

Purpose As members of the future pharmacy workforce, newly practicing pharmacists will be directly involved in key changes in practice. The purpose of this study is to (a) determine the desirability of core health-system pharmacist responsibilities among new practitioners, (b) assess new practitioner satisfaction about the current state of practice, and (c) evaluate the willingness of newly practicing pharmacists to change practice. Results Results from this study indicate new practitioners have a greater preference for clinical, direct patient care activities compared with traditional operational functions. There is a disparity between new practitioner preferences and current practice opportunities. Respondents were satisfied with pharmacy practice at their institution (86%), yet less satisfied (56%) with the current state of health-system pharmacy practice in the United States. Satisfaction with practice at respondents' institutions was significantly associated with region, with respondents from the Great Lakes region significantly more satisfied than respondents from the Eastern, Western, and Southeastern regions ( P = .02). Respondents with postgraduate training had 2.3 times higher odds of being satisfied than those without postgraduate training ( P = .02). Survey respondents indicated a general willingness to accept change. When these results were compared to director of pharmacy responses from a 2008 survey, differences were identified between new practitioner preferences and practice availability. Conclusion New practitioners tend to prefer clinical functions with greater direct patient contact and are satisfied with pharmacy practice. New practitioners are willing to accept change and, therefore, will be integral to developing and implementing practice models. These findings will help the profession move forward in developing practice models that address new practitioner skills, attitudes, and opinions, successfully building the future vision of pharmacy practice.
Functional specificity of Akt isoforms in cancer progression
Authors: Fortier Anne-Marie , Asselin Eric , Cadrin Monique 
Published: March 2011

AbstractAkt/PKB kinases are central mediators of cell homeostasis. There are three highly homologous Akt isoforms, Akt1/PKBα, Akt2/PKBβ and Akt3/PKBγ. Hyperactivation of Akt signaling is a key node in the progression of a variety of human cancer, by modulating tumor growth, chemoresistance and cancer cell migration, invasion and metastasis. It is now clear that, to understand the mechanisms on how Akt affects specific cancer cells, it is necessary to consider the relative importance of each of the three Akt isoforms in the altered cells. Akt1 is involved in tumor growth, cancer cell invasion and chemoresistance and is the predominant altered isoform found in various carcinomas. Akt2 is related to cancer cell invasion, metastasis and survival more than tumor induction. Most of the Akt2 alterations are observed in breast, ovarian, pancreatic and colorectal carcinomas. As Akt3 expression is limited to some tissues, its implication in tumor growth and resistance to drugs mostly occurs in melanomas, gliomas and some breast carcinomas. To explain how Akt isoforms can play different or even opposed roles, three mechanisms have been proposed: tissue-specificity expression/activation of Akt isoforms, distinct effect on same substrate as well as specific localization through the cyto-skeleton network. It is becoming clear that to develop an effective anticancer Akt inhibitor drug, it is necessary to target the specific Akt isoform which promotes the progression of the specific tumor.
Bone loss after childhood acute lymphoblastic leukaemia: an observational study with and without GH therapy
Authors: Follin Cecilia , Link Katarina , Wiebe Thomas , Moëll Christian , Björk Jonas , Erfurth E M 
Published: March 2011

ObjectiveBone mineral density (BMD) in survivors of acute lymphoblastic leukaemia (ALL) seems to vary with time, type of treatments and GH status. We aimed to evaluate BMD in ALL patients with GH deficiency (GHD), with and without GH therapy.DesignCase–control study.MethodsWe examined 44 (21 women) GHD patients (median 25 years) treated with cranial radiotherapy (18–24 Gy) and chemotherapy and matched population controls for BMD with dual-energy X-ray absorptiometry. For 5 and 8 years, two subgroups with (0.5 mg/day) (n=16) and without GH therapy (n=13) and matched controls were followed respectively.ResultsAt baseline, no significant differences in BMD or Z-scores at femoral neck and L2–L4 were recorded (all P>0.3). After another 8 years with GHD, the Z-scores at femoral neck had significantly decreased compared with baseline (0.0 to −0.5; P<0.03) and became lower at the femoral neck (P=0.05), and at L2–L4 (P<0.03), compared with controls. After 5 years of GH therapy, only female ALL patients had a significantly lower femoral neck Z-scores (P=0.03). The female ALL patients reached an IGF1 level of −0.7 s.d. and male patients reached the level of +0.05 s.d.ConclusionsOn average, 25 years after diagnosis, GH-deficient ALL patients experienced a significant decrease in Z-scores at femoral neck, and if Z-scores continue to decrease, there could be a premature risk for osteoporosis. GH therapy was not shown to have a clear beneficial effect on BMD. Whether higher GH doses, particularly in women, will improve Z-scores needs further investigation.
Associations of IGF1 and IGFBPs 1 and 3 with all-cause and cardiovascular mortality in older men: the Health In Men Study
Authors: Yeap Bu B , Chubb S A Paul , McCaul Kieran A , Ho Ken K Y , Hankey Graeme J , Norman Paul E , Flicker Leon 
Published: March 2011

ObjectiveCirculating IGF1 declines with age while ill-health increases. Controversy remains whether differences in the levels of IGF1 and its binding proteins 1 and 3 (IGFBP1 and IGFBP3) determine health outcomes during ageing. We examined associations of IGF1, IGFBP1 and IGFBP3 with all-cause and cardiovascular mortality in older men.DesignWe conducted a prospective cohort study of community-dwelling men aged ≥70 years.MethodsPlasma collected at baseline (2001–2004) was assayed for total IGF1, IGFBP1 and IGFBP3. Incidence and causes of death from time of recruitment to 31 December 2008 were ascertained using the Western Australian Data Linkage System. Cox regression analyses were performed, adjusting for conventional cardiovascular risk factors.ResultsAmong 3983 men followed for 5.2 years (median), 694 deaths occurred, 243 from cardiovascular disease (CVD). There was no difference in survival according to quintiles of IGF1. Increased IGFBP1 predicted increased all-cause mortality (highest versus lowest quintile: adjusted hazard ratio (HR)=1.98, 95% confidence interval (CI)=1.52–2.57, P<0.001 for trend) and increased cardiovascular mortality (HR=3.42 (2.03–5.77), P<0.001 for trend). Decreased IGFBP3 predicted increased all-cause mortality (lowest versus highest quintile: HR=1.57, 95% CI=1.23–2.01, P=0.007 for trend). Associations of IGFBP1 and IGFBP3 with all-cause mortality were not attenuated by adjustment for IGF1 levels.ConclusionsIn older men, higher IGFBP1 and lower IGFBP3 levels predict overall and CVD-related mortality, while IGF1 levels are not associated with mortality. Further studies are needed to clarify the underlying mechanisms by which IGFBP1 and IGFBP3 levels are associated with mortality risk, and whether this occurs independently of IGF1.
Advanced Materials for Printed Circuit Boards
Authors: Wang David Wei 
Published: March 2011

The printed circuit board is an integral part of the electronic packaging hierarchy. Its use began more than 40 years ago, and the demand for printed circuit boards has increased in parallel with the growth of the electronics industry.[1] According to a recent forecast, the worldwide production of printed circuit boards will reach to over 19 billion U.S. dollars' worth by 1990.[2] With continuing demands for more interconnections, the multilayer circuit board industry is experiencing its fastest growth rate. Boards with more than 20 inner planes of circuitry are being manufactured with high reliability.Based on dollar values, more than 90% of the circuit boards produced are in the rigid board category, where starting materials are based on thermosetting prepregs produced by a solution impregnation method. This article is a review of materials currently used in rigid composites.
High Performance Silicone Gel as IC Device Chip Protection
Authors: Wong C. P. 
Published: March 2011

ABSTRACTRecent advances in IC device encapsulants and polymeric materials have made high reliability VLSI plastic packaging a reality. High performance silicone gel possesses excellent electrical and physical properties for IC protection. With their intrinsic low modulus and soft gel-like nature, silicone gels have become very effective encapsulants for the delicate larger chip size and wire-bonded VLSI chips. Recent studies indicate that adequate IC chip surface protection with high performance silicone gels in plastic packaging could possibly replace conventional ceramic: hermetic packaging. This paper will review some potential IC encapsulants. Special focus will be placed on the high performance silicone gel, its chemistry, and its application as a VLSI device encapsulant.
Chemistry of Adhesion at the Polyimide-Metal Interface
Authors: Grunze M. , Unertl W. N. , Gnanarajan S. , French J. 
Published: March 2011

ABSTRACTThis article describes recent studies of the chemistry of adhesion between thin (d ≥ 11 Å) polyimide films and silver and copper substrates, and the structural changes in the polymer when polyamic acid is imidized to polyimide. The thin polyamic acid films were formed by vapor phase deposition of 1,2,4,5-benzenetetracarboxylic anhydride (PMDA) and 4,4-oxydianiline (ODA) under high vacuum conditions and subsequent imidization by heating in vacuum. Both ODA and PMDA are at least partially dissociated upon adsorption onto clean copper and silver and with increasing film thicknesses react to form the polyimide precursor, polyamic acid. Heating to T ≥ 425 K leads to polymerization to form polyimide films which are thermally stable to about 700 K. Polyimide films with mean thicknesses as small as 1.1 nm have been fabricated in this way and their bonding to the substrate as determined by x-ray photoemission studies is su marized. Infrared reflection absorption data gives further evidence that the polyimide bonds to the substrate via fragmented PMDA. Changes in the surface topography and molecular structure of the films during imidization are demonstrated by scanning tunneling micrographs and infrared reflection absorption data.
Etching and Surface Modification of Polymers in CF4/O2 Plasma Discharges
Authors: Scott P. M. , Babu S. V. , Partch R. E. , Matienzo L. J. 
Published: March 2011

ABSTRACTSome results of simultaneous measurement of polyimide etch rates, temperature, and O− and F− atom emission intensities in CF4/O2 plasma discharges are described. Several process variables have been investigated both during steady and unsteady plasma reactor operation. Atomic compositions on the polymer surface have been determined as a function of time of exposure to the plasma using ESCA, and the C IS spectra apalyzed to identify the various C-O and C-F bonds.
Aluminum Nitride fibers from a Thermoplastic Organoaluminum Precursor
Authors: Bolt John D. , Tebbe Fred N. 
Published: March 2011

ABSTRACTA new organoaluminum polymer (EtAINH)n(Et2AlNH2)m·AlEt3 derived from triethylaluminum and ammonia, is thermoplastic at elevated temperatures and a glassy solid at ambient temperature. As a thermoplastic it can be processed in certain shapes, solidified, cured and transformed to dense aluminum nitride with retention of its shape. Aluminum nitride fibers are prepared by melt spinning the polymer, pyrolyzing in ammonia and at high temperature in nitrogen. The AlN microstructure forms as very fine particles at 400–600°C, coarsens at higher temperature, and densifies at 1600–1800 °C into polycrystalline AlN with submicron grains. Mechanical strength, thermal expansion and dielectric constant are consistent with bulk ceramic values. Initial thermal conductivity deduced from composite measurements is 82 W/m°K in fibers containing 0.5 to 1.0 percent oxygen.
Diffusional Processes in Metallurgical Interconnections
Authors: Kang S. K. , Woychik C. G. 
Published: March 2011

ABSTRACTDiffusional processes, either solid- or liquid-state, are essential in promoting reliable metallurgical interconnections used in many electronic
packaging applications. The same phenomena often degrade the integrity and reliability of the interconnections as well. In this talk, both examples
are presented to illustrate how the diffusional processes are important in many interconnection technologies. Thermocompression bonding, eutectic
bonding, soldering and liquid-phase bonding are chosen for this purpose. Several issues related to soldering, such as dissolution, intermetallic
formation and microstructure of solder joints, will also be discussed in terms of diffusional processes.
Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy
Authors: Goyal D. , Ng W. , King A. H. , Bilello J. C. 
Published: March 2011

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.
Reaction Diffusion in the Au-Cu-Pb-Sn System at Low Temperature
Authors: Roeder J. F. , Notis M. R. , Goldstein J. I. 
Published: March 2011

ABSTRACTThe microstructure of a Cu3Au v. Pb-5wt%Sn diffusion couple was examined in the as-dipped and annealed conditions. The as-dipped couple showed no reaction between the solder and the base metal. The couple developed intermediate layers of two intermetallic phases upon annealing for 289 hours at 169°C. These phases were identified as phi and eta’ which are contained in the Au-Cu-Sn ternary system. No phases containing significant amounts of Pb formed, indicating that even at low concentrations in a Pb-Sn solder, Sn is the active chemical specie in the solder for the Au-Cu-Pb-Sn system. The microhardness of the eta’ phase was found to be equal to that of Cu3Sn, which forms in the absence of Au in the Cu base metal. However, the the phi phase was harder, and therefore the presence of Au in the base metal may adversely affect the thermal fatigue resistance of the solder joint.
Nb Contacts to GaAs: Thermal Stability and Phase Formation
Authors: Schulz Kevin J. , Zheng Xiang-Yun , Chang Y. Austin 
Published: March 2011

ABSTRACTThe applicability of Nb as a Schottky barrier on GaAs depends to a large extent on the thermal stability of the contacts. In this study, bulk diffusion couple and phase diagram studies in addition to thin film studies were completed to understand the stability of and the reactions at the Nb/GaAs interface. Nb thin films were deposited onto GaAs substrates by dc magnetron sputtering and were annealed in the temperature range 300 to 1000°C. Analysis was done using plan-TEM and XTEM. The Nb/GaAs interface was found to break down into a series of binary compounds above 500°C. Bulk diffusion couples annealed at 600°C were analyzed using an electron microprobe. The stable sequence of phases formed in the couple, i.e., the diffusion path, was determined and was used to rationalize the observed compound formation in the thin film contact system.
Production Contact Via Etching for GaAs MMICs.
Authors: Astell-Burt P. J. , Ditmer G. A. , Kadakia V. B. , Cochran B. C. , Webb D-R 
Published: March 2011

ABSTRACTResearch has been undertaken in several major research laboratories to achieve a commercially successful GaAs via hole etching process. This work presents the achievement of results with the desired characteristics for through-wafer GaAs interconnects or vias, for production of MMICs.We report vias acceptable for use in the production of microwave GaAs field effect transistors fabricated by a reactive ion etching process. Using conventional resist masks and non toxic gases, aspect ratios of up to 10:1 have been achieved with via sizes as small as 40μm × 40μm. Typical wafer thicknesses were greater than 100μm and the process showed high selectivity to the frontside metallization. The etching conditions had to be varied as a function of overall substrate area and exposed GaAs. To determine optimum process parameters, the RF power and resultant DC bias; gas flow rates and ratios; and system pressure were systematically varied. The effects of changes in area of wafer to be etched and of the composition of the electrode material were also studied. Details are presented of the optimum etching parameters for use in 2″ and 3″ GaAs MMIC production.
Thermal Stability of Amorphous Ni-Nb Thin Films for Use as Diffusion Barriers
Authors: Farrens S. N. , Perepezko J. H. , Doyle B. L. , Lee S. R. 
Published: March 2011

ABSTRACTThe interdiffusion and crystallization reactions between amorphous Ni-Nb alloy films and Si substrates and several overlayer metals have been monitored by x-ray diffraction and high resolution Rutherford backscattering spectroscopy. Free standing amorphous thin films of Ni-Nb alloys crystallize in one hour at temperatures between 600–625 °C and show little dependence of the crystallization temperature, Tx, on composition over the range from 30–80 at.% Ni. However, in films that are sputter deposited onto Si substrates Tx tends to increase with increasing Nb composition. Ni60Nb40 samples without overlayers crystallize at 650–700 °C. Enhancement of the thermal stability to 700–750 °C is achieved with a Nb overlayer. In contrast, a Ni overlayer can reduce Tx to 450 °C. At the film/substrate interface silicide formation reactions with Ni from the film contribute to a destabilization of the amorphous alloy. The modification of Tx with Ni, Nb, and other overlayers appears to be related to changes in the reaction kinetics associated with penetration of the overlayer into the film.
Recent Advances in Thin Film Multilayer Interconnect Technology for IC Packaging
Authors: Jensen Ronald J. 
Published: March 2011

ABSTRACTA high-performance packaging technology being developed at Honeywell and a number of other companies uses thin-film processes to pattern high-density interconnections in multiple layers of a high-conductivity conductor (e.g., copper) and a polymer dielectric, primarily polyimide. This paper describes the physical characteristics and unique advantages of this thin film multilayer (TFML) interconnect technology; it then summarizes the results of recent work done at Honeywell in processing TFML structures, assessing the stability and reliability of the materials system, and fabricating test vehicles and demonstration packages.
The Chemical Durability of Some Hlw Glasses: Effects of Hydrothermal Conditions and Ionising Radiation
Authors: Cousens D.R. , Lewis R.A. , Myhra S. , Segall R.L. , Smart R.St.C. , Turner P.S. 
Published: March 2011

ABSTRACTThe time dependence of leaching and dissolution under hydrothermal conditions at 250°C has been investigated in an autoclave designed for continuous sampling; it is found that the rates are in accord with those obtained by the commonly used procedures. The effect of pressure by itself has been studied in an ultracentrifuge; ambient rates for Si and Na loss remain unchanged up to about 40 MPa followed by a monotonic increase to about 1.5 times the ambient rates at 160 MPa. The surface layers formed as a result of chemical attack have been examined (XRD, IR, XPS and PIXE). It is found that Zn present in the glass or in the solution is retained in the siliceous layer which in some circumstances contains a crystalline zinchydroxy- silicate phase. A method for enhancing rates of displacement damage by a factor of ∼106 has been developed. Powdered borosilicate glass and glass doped with UO2 have been neutron-irradiated in a high-flux reactor. Damage is thereby introduced in the bulk as a result of 10B(n,α)7Li and (n,fission) events and subsequent slowing-down of energetic charged ions. Irradiation doses equivalent to 106 years HLW storage have been achieved. The resultant stored energy of ∼102 kJ kg−1 is released over the range 300 to 800 K. The initial leaching/dissolution rates are found to be increased by a factor of about three by irradiation; the changes in longer-term rates are difficult to determine due to the effects of back-reactions and changing particle size geometry and size distribution, but significant enhancement is found. Rates for fission and activation products are similar to those for bulk species.
Chemical Stability of Simiulated HLW Forms in Contact With Clay Media
Authors: Van Iseghem P. , Timmerans W. , De Batist R. 
Published: March 2011

ABSTRACTThe corrosion stability of six simulated HLW forms proposed by several European countries (five borosilicate glasses and one borosilicate glass ceramic) in contact with different media relating to the clay disposal has been investigated for periods up to 80 days and at a surface area to solution volume ratio of 1 cm−1 under non de-aerated conditions. In the reference medium distilled water the corrosion stabilities are largely determined by saturation effects for elements such as Si, Ca, Mg, Sr, Fe and U. Si saturation is found to be enhanced by a large Al2O3 concentration in the glass. In the clay-water mixture these saturation effects are much less predominant. Wet clay attacks the waste forms faster than the clay-water mixture, although the corrosion rates tend to decrease with time in both clay media. In general, no simple Arrhenius-type temnnerature dependence for the corrosion behaviour is found for the interval between 40 and 200°C.
Stability and Alteration of Naturally Occurring Low-Silica Glasses: Implications for the Long term Stability of Waste Form Glasses
Authors: Allen Carlton C. 
Published: March 2011

ABSTRACTVolcanic glass of basaltic composition (approximately 50 wt.% SiO2) was studied as a natural analogue to proposed nuclear waste form glasses. Basaltic glass can resist devitrification and remain glassy for periods in excess of 10 m.y. Surface alteration of the glass occurs rapidly upon exposure to water or hydrothermal fluids, but is essentially absent if the glass remains dry. Alteration is restricted to a rind of clay-like, cryptocrystalline palagonite, generally less than 100 μm thick. Formation of this rind protects the underlying glass from further alteration. Similar rinds, or “gel layers”, have been produced in laboratory and field tests with borosilicate glasses. Major cations within the basaltic glass are selectively depleted or enriched relative to the glass in the alteration rind. Qualitatively-similar depletion and enrichment patterns characterize the short-term leaching behavior of candidate waste form glasses.