bluuebunny/crossref_metadata_2025_split huggingface dataset:
High Throughput Screening of Waterbased Coating Formulations
Authors: Roper John , Johnson Michael , Keefe Melinda , Mecca Jodi , Cesaretti Richard 
Published: August 2010

AbstractSince 1998, Dow has been actively developing and applying high throughput research (HTR) methodologies to increase the speed to market and the probability of successful product introductions. Initially Dow implemented this approach in the area of homogeneous catalysis. Based upon the success in this area, high throughput methods have been expanded into other research areas such as waterborne coatings. Paint formulations offer an excellent opportunity to use the strengths of high throughput research to understand how complex interactions between many components affect final properties. High throughput tools enable the rapid and reproducible development of paints, preparation of coating on substrates, and evaluation of performance. Rapid formulation and testing allows the interactions between formulation variables to be investigated in much more depth and breadth than has been possible in the past. Finally, statistical anaylsis and data mining tools can be used to optimize a desired balance of properties within customer defined constraints. This paper presents an example of using Dow's HTR coatings workflow to improve properties for low VOC / low odor architectural coatings.
Mechanical Characterization of Interfacial Adhesion in Elastomeric Material for Microelectronic Device through JKR Model Combined with Micro-to-Nano IIT
Authors: Lee Gyujei , Oh Jae-sung , Byun Kwang-yoo , Kang Seung-kyun , Kwon Dongil 
Published: August 2010

AbstractInstrumented indentation testing (IIT) is a very useful technology for the mechanical characterization of materials. However, existing IIT techniques, which are based on the Hertz model and were developed for hard materials with negligible surface adhesion such as metals and ceramics, are difficult to directly apply to compliant materials such as elastomeric polymers which have viscoelastic hysteresis due to infinitesimal surface/interfacial adhesion. Here we employed some modified model to evaluate the work of adhesion in elastomeric polymer from our previous work, and reinforced our theory and algorithm through empirical approaches so as to consider the time-dependency of viscoelastic material as testing parameter. To do these all, we combined analytic JKR theory and conventional IIT technology to analyze the physical meaning of the theory and then verified our ideas experimentally with elastomeric polymer, PDMS (poly(dimethyl-siloxane)), of various compositions. Our algorithm was developed and verified on a microinstrumented indentation basis and extended even into the nanoinstrumented testing for the micro/nano-scaled applications.
Lattice and electronic effects in rutile TiO2containing charged oxygen defects fromab initiocalculations
Authors: Park Seong-Geon , Magyari-Köpe Blanka , Nishi Yoshio 
Published: August 2010

AbstractWe performed first-principle simulation for the study of oxygen vacancy defect in rutile TiO2based on density functional theory. The effects of a vacancy on the electronic structure of rutile TiO2were studied. Here we have employed neutral and charged oxygen vacancy in the supercell to address the resistance switching mechanism. Neutral vacancy induces the band gap states at deep level, ∼0.7 eV below the conduction band minimum, which is occupied by highly localized electrons. The calculation results of positively charged oxygen vacancy show that larger atomic relaxation surrounding oxygen vacancy results in the stretching of Ti-O bond around vacancy, thus band gap states are formed near the conduction band minimum.
Spectral Control of Thermal Radiation by Metallic Surface Relief Gratings
Authors: Sai Hitoshi , Kanamori Yoshiaki , Watanabe Kengo , Yugami Hiroo 
Published: August 2010

AbstractThe microcavity effect of two-dimensional W surface-relief gratings has been investigated by means of the finite-difference time-domain simulation. The peak structure of the spectral emissivity of W gratings with a number of microcavities is in good agreement with the spectral features of a single microcavity. This result shows that the emissivity enhancement by W gratings with microcavities is mainly attributable to the microcavity effect that arises from each microcavity. It is that the spectral emissivity can be controlled by a combination of several microcavities with different parameters, and that not only a rectangular but a cylindrical microcavity also shows the microcavity effect according to its cavity modes.
Solvothermal Preparation, Processing, and Characterization of Nanocrystalline CuIn1-xAlxSe2 Materials
Authors: Exstrom Christopher L. , Olejníček Jiří , Darveau Scott A. , Mirasano Anatole , Paprocki David S. , Schliefert Megan L , Ingersoll Matt A. , Slaymaker Laura E. , Soukup Rodney J. , Ianno Natale J. , Kamler Chad A. 
Published: August 2010

AbstractWe report solvothermal preparations of nanocrystalline CuIn1-xAlxSe2 materials prepared from the reaction of Se, CuX2 (X = Cl− or stearate), InCl3, and Al(oleate)3 in refluxing oleylamine for 30 minutes to 3 hours. Scanning electron microscopy (SEM) images reveal morphologies consisting of hexagonal plates (100-400 nm diameter) with smaller isomorphic nodules. Micro-Raman spectroscopy, x-ray diffraction, and optical bandgap data are consistent with Al3+ incorporation into the chalcopyrite structure. For aluminum-containing reactions, product Al/(In+Al) ratios are estimated to be between 0.15 and 0.35 regardless of the indium-aluminum stoichiometry employed in the reaction. When Se is added to the reaction last, the reaction pathway involves an early-formed Cu2-xSe(s) intermediate that appears to react with In- and Al-containing species simultaneously. This intermediate is avoided when heating InCl3, Al(oleate)3, and Se together prior to Cu addition, but the final product includes Se contamination that must be removed or reacted by annealing.
New Structural Investigations in the Cu2Se(S)-In2Se3(S)/Cu2Se(S)-Ga2Se3(S) Phase Diagrams
Authors: Stephan Christiane , Schorr Susan , Schock H.W. 
Published: August 2010

AbstractNon-stoichiometry is a characteristic feature of ternary chalcopyrites like Cu-III-VI2 (III=In,Ga; VI=S,Se). The results of a comparative study of structural trends within the homogeneity region of the chalcopyrite type α-phase of the Cu2Se(S)-In2Se3(S) and Cu2Se(S)-Ga2Se3(S) quasibinary phase diagrams are presented. Powder samples of Cu-rich and Cu-poor [Cu2Se(S)]1-y-[In2Se3(S)]y as well as [Cu2Se(S)]1-y-[Ga2Se3(S)]y alloys were prepared (0.4<y<0.6) by solid state reaction of the elements (T=850°C) and investigated by X-ray powder diffraction and electron microprobe analysis. It was shown that the grain size depends on composition and structural parameters. The tetragonal distortion η=c/2a has been determined for the different trivalent cations and influences the microstructure in Cu-poor Cu1-xIII1+x/3VI2 samples. In Cu-rich samples the Cu-content is in all cases the driving force for the formation of the homogeneous microstructure observed.
Growth by Molecular Beam Epitaxy of GaNAs Alloys with High As Content for Potential Photoanode Applications in Hydrogen Production
Authors: Novikov Sergey V , Staddon Chris R , Akimov Andrey V , Campion Richard , Zainal Norzaini , Kent Anthony J , Foxon Tom , Chen Chien H , Yu Kin M , Walukiewicz Wladek 
Published: August 2010

AbstractWe have studied the low-temperature growth of GaNAs layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN1-xAsx alloys over a large composition range by growing the films at temperature much below the normal GaN growth temperatures with increasing the As2 flux as well as Ga:N flux ratio. We found that the alloys with high As content x>0.1 are amorphous. Optical absorption measurements reveal a continuous gradual decrease of band gap from ˜3.4 eV to ˜1.4 eV with increasing As content. The energy gap reaches its minimum of ˜1.4 eV at the x˜0.6-0.7. For amorphous GaAsN alloys with x<0.3 the composition dependence of the band gap follows the prediction of the band anticrossing model developed for dilute alloys. This suggests that the amorphous GaN1-xAsx alloys have short-range ordering that resembles random crystalline GaN1-xAsx alloys. Such amorphous GaN1-xAsx alloys with tunable electronic structure may be useful as photoanodes in photo-electrochemical cells for hydrogen production.
1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO2 Passivation Layer
Authors: Lim Jiyong , Choi Young-Hwan , Kim Youngshil Kim , Kim Min-Ki , Han Min-Koo 
Published: August 2010

AbstractConsiderable amount of works have been reported to achieve a high breakdown voltage of AlGaN/GaN heterostructure devices by employing additional process such as SiO2 passivation1,2, floating metal rings and Ni/Au Oxidation3. However, it should be point out that treatment of passivation layer of AlGaN/GaN heterostructure devices has been reported scarcely. As+ ion implantation on SiO2 passivation layer may be a simple and effective to reduce electric field strength to increase breakdown voltages.
The cross-sectional view of the proposed AlGaN/GaN Schottky barrier diode is shown in Fig. 1. We fabricated conventional AlGaN/GaN Schottky barrier diode and passivated the device with SiO2 layer of 350 nm thick. Finally As+ ions were implanted on the SiO2 passivation layer. We measured the surface potential of the test samples with electric force microscopy (EFM) in order to verify that implanted As+ ions remained as positively charged ions in SiO2 layer after ion implantation. After ion implantation, 2 dimensional electron gas (2DEG) concentration was increased slightly from 8.28E12 /cm2 to 8.38E12 /cm2 so that the forward current was also increased slightly. Table shows the breakdown voltages of the SBDs before and after As+ ion implantation. After As+ 80 keV 1 × 1E14 atoms/cm2 implantation, the breakdown voltage increased considerably from 604 V to 1204 V due to the edge termination by implanted As+ ions. The reverse leakage current decreased from 80.3 uA/mm to 21.2 nA/mm due to the relaxation of electric field concentration by As+ ion implantation. We verified the electric field relaxation through 2D simulation. After As+ ion implantation, the depletion region curvature under the reverse biased condition became moderate so that the maximum electric field strength was decreased.
As+ ion implantation method may be a simple and effective edge termination method for improving the breakdown voltage as well as the leakage current of the proposed AlGaN/GaN SBDs. Proposed AlGaN/GaN SBDs showed high breakdown voltage of 1204 V and low leakage current of 21.2 nA/mm without any considerable decrease of forward characteristics while that of conventional device was 604 V and 80.3 uA/mm, respectively.
Effects of Synthesis Conditions on the Crystalline Phases and Photocatalytic Activities of Silver Vanadates via Hydrothermal Method
Authors: Huang Chao-Ming , Pan Guan T. , Chen Lung C. , Yang C.K. Thomas , Chang Wen S. 
Published: August 2010

AbstractVisible-light-driven Ag3VO4 photocatalysts were successfully synthesized using low-temperature hydrothermal synthesis method. Under various hydrothermal conditions, the structures of silver vanadates were tuned by manipulating the hydrothermal time and the ratio of silver to vanadium. X-ray diffraction (XRD) results reveal that the powders prepared in a stoichiometric ratio consisted of pure α-Ag3VO4 or mixed phases of Ag4V2O7 and α-Ag3VO4. With increasing the Ag-to-V mole ratio to 6:1, the resulting samples were identified as pure monoclinic structure α-Ag3VO4. UV-vis spectroscopy indicated that silver vanadate particles had strong visible light absorption with associated band gaps in the range of 2.2-2.5 eV. The sample synthesized in the excess silver exhibited higher photocatalytic activity than that synthesized in a stoichiometric ratio. The powder synthesized at silver-rich at 140℃ for 4 h (SHT4) exhibited the highest photocatalytic activity among all samples. The reactivity of SHT4 (surface area, 3.52 m2 g-1) on the decomposition of gaseous benzene was about 16 times higher than that of P25 (surface area, 49.04 m2 g-1) under visible light irradiation. A well developed crystallinity of Ag3VO4 of SHT 4 was considered to enhance the photocatalytic efficiency.
Photocatalysis of nano-perovskites
Authors: Chen Yen-Hua , Chen Yu-De 
Published: August 2010

AbstractIn this study, we can successfully synthesize nano-perovskites, including nano-CaTiO3, nano-SrTiO3, and nano-BaTiO3, by a co-precipitation method. The band gap of the nano-perovskites are 3.65 eV, 3.44 eV, and 3.35 eV, for nano-CaTiO3, nano-SrTiO3, and nano- BaTiO3, respectively. The ability of photocatalysis for nano-BaTiO3 is a little bit better than other nano-perovskites. It is also observed the photocatalytic activity increases with the increasing amount of photocatalysts. Moreover, the ability of photocatalysis using a higher energy UV-light is not promoted with the low energy UV-light.
Low-Energy Ion Beam Synthesis as a New Route toward Plasmonic Nanostructures
Authors: Carles Robert , Farcau Cosmin , Campos Julien , Bonafos Caroline , BenAssayag Gérard , Zwick Antoine 
Published: August 2010

AbstractSingle δ-layers of dispersed silver (Ag) nanoparticles are obtained by low-energy ion beam implantation in a silica thin film. TEM microscopy reveals that the obtained Ag particles are spherical, crystalline, and the particles layer is located at only few nanometers below the free silica surface. We use reflectivity measurements to probe the optical/plasmonic response of the fabricated structures and exploit plasmon resonance and optical interference effects in the silica film to record the Raman scattering by quadrupolar vibrations of the spherical particles.
Strong Exciton Polariton Dispersion in Multimode GaN Microcavity
Authors: Liu Mei-Chun , Cheng Yuh-Jen , Hsu Shih-Hsin , Kuo Hao-Chung , Lu Tien-Chang , Wang Shing-Chung 
Published: August 2010

AbstractWe report the experimental observation of a very strong cavity polariton dispersion in a multi-axial mode GaN microcavity. The linewidth of photoluminescent (PL) spectrum covers a few cavity axial modes. The resonant photoluminescent peaks have a strong dispersion. The frequency spacing between adjacent peaks decreases by almost a factor of five from 470nm to 370nm. The strong dispersion can be well described by cavity polariton dispersion, but not by the dispersion of the refractive index of GaN. The measured exciton-photon interaction constant is 260 meV. It is an order of magnitude higher than the typically reported values for GaN microcavities
Large area light propagation in quasi-zero average refractive index materials
Authors: Dardano Principia , Mocella Vito , Cabrini Stefano , Chang Allan S. , Moretti Luigi , Rendina Ivo , Olynick Deindre , Harteneck Bruce , Dhuey Scott 
Published: August 2010

AbstractIn this paper the experimental results show near-infrared light collimation through large area (2 x 2 mm) nanopatterned material with refractive index quasi-zero on the average. This quasi-zero refractive index is obtained alternating photonic crystals strips with effective refractive index neff = –1 and air strips (n = 1). Layers optically annihilate each other, verifying the optical antimatter concept theoretically proposed by Pendry et al [J. Phys.: Condens. Matter 15, 6345 (2003)].
Automated diffraction tomography combined with electron precession: a new tool forab initionanostructure analysis
Authors: Kolb Ute , Gorelik Tatiana , Mugnaioli Enrico 
Published: August 2010

AbstractThree-dimensional electron diffraction data was collected with our recently developed module for automated diffraction tomography and used to solve inorganic as well as organic crystal structuresab initio. The diffraction data, which covers nearly the full relevant reciprocal space, was collected in the standard nano electron diffraction mode as well as in combination with the precession technique and was subsequently processed with a newly developed automated diffraction analysis and processing software package. Non-precessed data turned out to be sufficient forab initiostructure solution by direct methods for simple crystal structures only, while precessed data allowed structure solution and refinement in all of the studied cases.
Reflection High-energy Electron Diffraction Study of Nanostructures: From Diffraction Patterns to Surface Pole Figure
Authors: Tang Fu , Lu Toh-Ming , Wang Gwo Ching 
Published: August 2010

AbstractIn this report we present a brief overview of the growth of nanostructures by the oblique angle deposition where the nanostructures possess both out-of-plane and in-plane preferred orientations or a biaxial texture. The degree of preferred crystal orientations can be quantitatively determined from a method called “RHEED surface pole figure analysis” that we developed recently.
High Energy X-ray Diffraction Measurement of Load Transfer between Hydroxyapatite and Collagen in Bovine Dentin
Authors: Deymier Alix C. , Almer Jonathan D. , Stock Stuart R. , Haeffner Dean R. , Dunand David C. 
Published: August 2010

AbstractDentin is a load bearing multiphase composite composed of a ceramic phase, hydroxyapatite (HAP), a polymeric phase, collagen, and fluid filled porosity. In order to create better dentin replacements it is important to understand how applied load is naturally transferred between the phases during chewing and other stresses. To determine the apparent elastic modulus of HAP in dentin, applied stress over lattice strain in HAP, high energy wide angle x-ray diffraction measurements were performed on in situ loaded bovine dentin samples. It was determined that the average longitudinal apparent elastic modulus of HAP in dentin was 18.3±2.19GPa. This value is much lower than values predicted by the Voigt model when combined with volume fractions determined for the sample by thermo-gravimetric and chemical analysis. It has been determined that the decrease in apparent elastic modulus is most likely due to a decrease in the “bulk” elastic modulus of HAP due to nanometric effects.
Design and Realization of Biomedical Devices Based on Shape Memory Polymers
Authors: Maitland Duncan J , Small IV Ward , Singhal Pooja , Hwang Wonjun , Rodriguez Jennifer N , Clubb Fred , Wilson Thomas S 
Published: August 2010

AbstractOur experience with shape memory polymers (SMP) began with a project to develop an embolic coil release actuator in 1996. This was the first known SMP device to enter human trials. Recent progress with the SMP devices include multiple device applications (stroke treatments, stents, other interventional devices), functional animal studies, synthesis and characterization of new SMP materials, in vivo and in vitro biocompatibility studies and device-tissue interactions for the laser, resistive, or magnetic-field activated actuators. We describe several of our applied SMP devices.
Multilayer Polymer Films for Photonic Applications
Authors: Zhou Juefei , Singer Kenneth , Song Hyunmin , Wu Yeheng , Lott Joseph , Andrews James , Hiltner Anne , Baer Eric , Weder Christoph 
Published: August 2010

AbstractPolymers are receiving considerable attention as components in novel optical systems because of the tailored functionality, easy manufacturing, and relatively low cost. The processing of layered polymeric systems by coextrusion is a method to produce films comprising hundreds to thousands of alternating layers with thickness spanning the nanoscale to microscale in a single, one-step roll-to-roll process. Several layered polymer optical systems have been fabricated by coextrusion, including tunable refractive index elastomers, photonic crystals, and mechanically tunable photonic crystals. Layered polymeric optical systems made by coextrusion can also incorporate active components such as laser dyes for all-polymer laser systems.
Structural and Magneto-Electric Properties of Pulsed Laser Deposited Ferroelectric/Ferromagnetic Heterostructure
Authors: Martinez Ricardo , Kumar Ashok , Palai Ratnakar , Katiyar Ram S. 
Published: August 2010

AbstractAsymmetric superlattices (SLs) with ferromagnetic La0.7Sr0.3MnO3 (LSMO) and ferroelectric Ba0.7Sr0.3TiO3 (BST) as constitutive layers were fabricated on conducting LaNiO3 (LNO) coated (001) oriented MgO substrates using pulsed laser deposition (PLD). The crystallinity, ferroelectric and magnetic properties of the SLs were studied over a wide range of temperatures and frequencies. The structure exhibited ferromagnetic behavior at 300K, and ferroelectric behavior over a range of temperatures between 100K and 300K. The dielectric response as a function of frequency obeys normal behavior below 300 K, whereas it follows Maxwell–Wagner model at elevated temperatures. The effect of ferromagnetic LSMO layers on ferroelectric properties of the SL indicated strong influence of the interfaces. The asymmetric behavior of ferroelectric loop and the capacitance-voltage relationship suggest development of a built field in the SLs due to high strain across the interfaces.
Structural, Magnetic, and Electrical Properties of BiFe1-xMnxO3 Thin Films
Authors: Barrionuevo Danilo G , Singh Surinder P , Tomar Maharaj S. 
Published: August 2010

AbstractWe synthesized BiFe1-xMnxO3 (BFMO) for various compositions by sol gel process and thin films were deposited by spin coating on platinum Pt/Ti/SiO2/Si substrates. X-ray diffraction shows all the diffraction planes corresponding to rhombohedrally distorted perovskite BiFeO3 structure. The absence of any impurity phase in the films suggests the incorporation Mn ion preferentially to Fe site in the structure for low concentration. Magnetic measurements reveal the formation of ferromagnetic phase at room temperature with increased Mn substitution. On the other hand, ferroelectric polarization decreases with increasing Mn ion concentration. Raman studies suggest the dopant induced structural distortion.
A New Method to Increase the Magnetoelectric Voltage Coefficients of Metglas/PVDF Laminate Composites
Authors: Fang Zhao , Lu David Sheng-Guo , Mokhariwale Ninad , El Tahchi Mario Remond , Zhang Qiming 
Published: August 2010

AbstractThe magnetic flux density inside a Metglas sheet is much higher than that of the applied external magnetic field due to its high magnetic permeability, which is known as the magnetic flux concentration effect. Magnetic flux concentration of Metglas as a function of its sheet aspect ratio (width/length) was investigated for Metglas/Polyvinylidene fluoride (PVDF) laminar composites. Both the simulations and experimental results suggest that the magnetic flux concentration effect is markedly enhanced when the aspect ratio of a Metglas sheet is reduced. Consequently the magnetostriction of Metglas and the magnetoelectric (ME) voltage coefficients of the laminar composites are enhanced. The ME voltage coefficient for a laminar composite with a 1 mm wide and 30 mm long Metglas sheet (25 μm thick) is 21.46 V/cm•Oe, which is much higher than those reported earlier in similar laminar composites without making use of the flux concentration effect. The results demonstrate an effective means to significantly enhance the sensitivity of the magnetostrictive/piezoelectric composites as weak magnetic field sensors.