bluuebunny/crossref_metadata_2025_split huggingface dataset:
3.3μm Pyrometry In Single Sided Rta From 400–700°C Using In-Situ Measurement Of Reflection And Transmission
Authors: Marcy D. L. , Chial S. , Beneš M. , Sturm J. C. 
Published: April 2011

ABSTRACTPyrometry of silicon wafers under 700°C at wavelengths over 1μm is difficult because lightly doped wafers become partially transparent. In this work, a modified commercial RTCVD reactor with 8” wafer capability was used to study the temperature measurement of Si wafers over the range of 400–700°C using top and bottom pyrometric detectors. We present initial results on measurements of both reflection and transmission in-silu to determine emissivity at 3.3μm. For heavily doped wafers emissivity was independent of temperature and the measured temperature by pyrometry agreed well with that measured by thermocouple for 400–700°C. For lightly doped wafers, emissivity was temperature dependent due to the increased transparency of the wafer at low temperatures. Using fixed emissivity, the measured temperature severely underestimates the actual temperature below 550°C. By calculating emissivity from the measured reflection and transmission, accurate temperature measurement was achieved from 400–700°C without any a priori knowledge of the wafer.
Physical and Electrical Properties of Defects Formed in Rapid Thermal Processing
Authors: Takáno Yukio , Kakumoto Katsunori , Funakoshi Tomoya 
Published: April 2011

ABSTRACTRTP will be replaced with some of the conventional thermal processing employed in ULSI fabrication lines in near future. We show at first the device characteristics demanded for next generation DRAM which is a typical example of ULSIs and some issues to satisfy the demands. Next we show some candidates for RTP in the ULSI processes and discuss difference between RTP and the conventional thermal processes. We think one of the largest difference is the quenching Si wafers after short time annealing and by the quenching the deep levels due to fast diffusing atoms and point defects in Si are introduced. Experimental results of N2 and Cu related deep levels are shown as the examples of the deep levels induced by the quenching in Si. Finally, we propose the gettering method for them in RTP.
A Reversible Effect of Rapid Thermal Annealing of Indium in Ion Implanted Silicon
Authors: Krasnobaev L. Y. , Cuomo J. J. 
Published: April 2011

ABSTRACTSi was implanted with 115In+ ions with a dose exceeding the value of the In solid solubility. Rapid thermal annealing with W-halogen lamp was done sequentially with the wafer facing in two different positions relative to the source of the light irradiation. It has been experimentally found that short and long wavelength components of incoherent light act in a different manner on the In atom activation in Si during RTA process. The effect of In activation and deactivation caused by the RTA treatment is reversible in the temperature region of 440–1020°C. The effect of In activation and deactivation exists after thirty RTA pulses.
Electrical Characteristics of New LDD Poly-Si TFT with MIS-Alignment Tolerant Structure for AMLCDs
Authors: Min Byung-Hyuk , Kanicki Jerzy 
Published: April 2011

ABSTRACTA new LDD poly-Si TFT structure having symmetrical electrical characteristics independent of the process induced mis-alignment is described in this paper. Based on the experimental results, we have established there is no difference between the forward and reverse characteristics and a low leakage current, comparable to a conventional LDD poly-Si TFT, has been maintained for this new poly-Si TFTs. The maximum ON/OFF current ratio of about 1×108 is obtained for the LDD length of 1.0 μm. In addition, the kink effect in the output characteristics is remarkably improved in the new TFTs in comparison to the conventional non-LDD single- or dual-gate TFTs.
Photo and Thermal Stability of Chlorine Doped Amorphous Silicon TFTs
Authors: Kim J. H. , Choi J. H. , Kim C. W. , Souk J. H. 
Published: April 2011

ABSTRACTThe Cl doped amorphous silicon film was deposited from SiH4, SiH2C12 and H2 gas mixture by PECVD process and their properties with various SiH2C12 flow rate is discussed. Controlling the amount of Cl doped was crucial for acquiring high stability TFT without lowering on current. Amorphous silicon and Cl doped amorphous silicon double layer TFT structure, with satisfactory on current and throughput, proved to be more stable than conventional amorphous silicon TFT in photo state and in elevated temperatures.
Photoluminescent Mn-Doped ZNS Nanoclusters Synthesized within Block Copolymer Nanoreactors
Authors: Kane R. S. , Cohen R. E. , Silbey R. J. , Kuno M. , Bawendi M. G. 
Published: April 2011

ABSTRACTMn-doped ZnS nanoclusters were synthesized within microphase-separated films of diblock copolymers containing carboxylic acid units on one of the blocks. Zinc was selectively sequestered into the acid-containing domains by treating the films with diethylzinc or an aqueous zinc acetate solution. Manganese was loaded by subsequent treatment of the films with aqueous manganese acetate solutions. The manganese ions displaced a fraction of the zinc ions, and the extent of loading was controlled by varying the loading time, and the concentration of the manganese acetate solution. The extent of loading was tracked using ICP discharge emission spectroscopy. The doped nanoclusters were formed by subsequent treatment with H2S. The size of the doped ZnS nanoclusters could be varied by carrying out the H2S exposure in the presence of a coordinating base. Photoluminescence measurements revealed that the doped nanoclusters were photoluminescent, and showed the characteristic manganese emission. The universal doped cluster synthesis scheme used is quite general and can be easily modified to produce other doped nanocluster clusters, such as Tb-doped ZnS, or Mn-doped CdS.
Fabrication and Characterization of Color Phosphors Prepared Electrophoretically for 4-inch Full Color Fed Application
Authors: Hong J. P. , Jang J. E. , Jin Y. H. , Kim J. W. , Choi J. H. , You Y. C. , Park N. S. , Kim J. M. 
Published: April 2011

ABSTRACTColor phosphors have been deposited on indium-tin glasses by utilizing an electrophoretic process for the application to prototype 4-inch full color FED devices. The deposition suspension is prepared with color phosphors of l-3um size, isopropanol, charger and binder. Various parameters, such as deposition time and applied voltages, are systematically performed to this end. As a result, each phosphor exhibited uniform thickness of about 6–10um over the whole plate. Electrical properties of the deposited phosphors are investigated and compared both in the vacuum chamber and in fully-sealed 4” FED conditions. In addition, they are extensively characterized by the SEM and 3-dimentional analysis. Experimental results confirm that the phosphor quality in real FED devices is significantly affected by deposition conditions.
The Dependence of Phase Separation of PDLC on the sample preparation Conditions of TFT LCD Panel
Authors: Noh C. H. , Park K. S. , Sakong D. S. 
Published: April 2011

ABSTRACTThe electro-optical property of PDLC had been improved by optimizing synthetic conditions such as control of crosslinking density of polymer and formulation. The PDLC materials had low driving voltage, high contrast ratio and high reliabilities for the long-term operation. But there remained some problems for applying to TFT LCD panel. The panel structure of TFT LCD was different from that of the transparent ITO glass because TFT LCD panel had many opaque parts such as transistor elements, metal electrodes and black matrix. Opaque parts of TFT panel shielded UV light and resulted in quite - different phase separation behaviors of PDLC prepared from the transparent ITO glass cell.The sample preparation conditions in TFT panel had to be changed to obtain similiar electro-optical property with ITO glass cell. Changes of UV intensity and photoinitiator species of the PDLC TFT panel were effective to obtain good results. Contrast of the panel and physical property of the liquid crystal could be improved to the level of ITO glass panel.
Substrate Issues for Advanced Display Technologies
Authors: Moffatt-Fairbanks Dawne M. , Tennent David L. 
Published: April 2011

ABSTRACTThe glass substrate plays a crucial role in the successful performance of advanced flat panel displays (FPDs). These FPD technologies include active-matrix liquid crystal displays (AMLCD) and Plasma Displays (PDP). Although these displays are different in the way in which they operate, there are several common substrate requirements, all of which are determined by the process for making the entire display. These include issues relating to substrate size, thermal shrinkage, high temperature stability, and substrate surface quality.While AMLCD technology is moving toward larger sizes, PDPs are currently large size displays, requiring large glass substrates. The primary issue in using larger substrates is minimizing distortion of the glass during high temperature processes, both viscous sag and shrinkage. These are related to the high temperature thermal stability which, in turn, is largely determined by the strain point and thermal history of the substrate. Finally, thickness uniformity and surface flaws are critical to the performance of the final display.Coming's Code 1737 glass substrate meets the requirements for AMLCDs and has become the industry standard. Corning/Saint-Gobain Code CS25 glass is a new glass that has significant benefits over soda-lime glass for PDP applications. This paper will discuss these two glasses in terms of the above-mentioned issues.
Noise and Operational Characteristics of Magnetometers Made from Superconducting-Normal-Superconducting Josephson Junctions
Authors: Reagor D. , Mombourquette C. , Decker J. , Fan Y. , Hawley M. , Houlton R. , Jia Q. X. 
Published: April 2011

ABSTRACTWe have fabricated numerous magnetometers using our high temperature superconducting (HTS) Josephson junctions. These Josephson junctions are fabricated in a superconducting-normal-superconducting ramp edge configuration1 with silver doped YBa2Cu3O7 (YBCO) for the superconducting electrodes and PrBa2Cu3O7, (PBCO) for the normal layer. Small inductance quantum interference devices (SQUEDs) made from this junction technology have a transfer function exceeding 150 microvolts per flux quanta and a flux noise of 5×10−6flux quanta per root hertz. In addition, we have established that these junctions have identical electrical characteristics after either a year of storage or repeated thermal cycling. We have also examined the trade-off of 1/f noise versus thermal noise that is obtained as we vary the critical current of the devices.The SQUID magnetometers were made using galvanically coupled input coils. These devices exhibit excellent operational characteristics in the geomagnetic field. They functioned in an unshielded environment for more than 24 hours and operated in a moving dewar (without any feedback fields to compensate the changing applied field) - both without flux trapping. Noise characteristics under these conditions are presented.
Structural Inhomogeneities and Resistivity in Radiation Damaged LA2/3(CA,SR)1/3MNO3-δ Pulsed Laser Deposited Thin Films
Authors: Stroud R. M. , Browning V. M. , Byers J. M. , Chrisey D. B. , Fuller-Mora W. W. , Grabowski K. S. , Horwitz J. S. , Kim J. , Knies D. L. , Osofsky M. S. 
Published: April 2011

ABSTRACTThe relationship between structural distortions and resistivity in pulsed laser deposited La2/3Ca1/3MnO3 (LCMO) and La2/3Ca1/3MnO3 (LSMO) thin films was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM) and resistivity measurements. The growth defects inherent to annealed films were characterized, and then additional defects were introduced by radiation damage. Epitaxially grown films on (100) LaA1O3 substrates exhibited three primary types of growth defects: interface strain, column boundary mismatch, and column rotation. High resolution TEM measurements show well-ordered regions of film that offer low resistance paths for current flow around growth defects. A series of annealed samples were irradiated with 6 Mev Si+3 ions to produce 0.006 to 0.024 displacements per atom (dpa) in LCMO films, and 0.028 to 0.14 dpa in LSMO films. The peak resistance temperature (Tp) was found to depend strongly on defect concentration, varying from 235K ± 15K for the unirradiated LCMO films to 95K for 0.018 dpa. At 0.024 dpa, the LCMO film was insulating at all temperatures. LSMO films showed a downward shift in Tp from 300K for an unirradiated film to 250K for 0.028 dpa, and complete insulating behavior for 0.14 dpa.
The Effects of Strain on The Magnetic Anisotropy of Doped Manganite Thin Films
Authors: Suzuki Y. , Tsai C. , Hwang H. Y. , Cheong S-W. , Van Dover R. B. 
Published: April 2011

ABSTRACTWe show the importance of the role of strain in doped manganite perovskite materials by revealing the dominance of stress anisotropy effects over magnetocrystalline anisotropy effects in the magnetic anisotropy of these films. In order to measure magnetic anisotropy in the plane of the films, remnant magnetization was measured as a function of in-plane angle. The (110) La0.7Sr0.3MnO3 films reveal a twofold symmetry while the (100) films have fourfold symmetry. Temperature dependence of the magnetic anisotropy of La0.7Sr0.3MnO3 films reveals decreasing anisotropy as the Curie temperature is approached.
Mocvd of Polycrystalline and Epitaxial Complex Oxides by Liquid Delivery
Authors: Roeder J. F. , Bilodeau S. M. , Carl R. J. , Baum T. H. , Van Buskirk P. C. , Woolcott R. R. , Kingon A. I. 
Published: April 2011

ABSTRACTA unique approach to MOCVD of complex oxides enables deposition of a number of materials of technological importance through the use of liquid delivery of metalorganic precursors. Methodologies for control of composition and exploration of. process space are compared for two film systems, one in a relatively mature state of development ((Ba,Sr)Ti03), the other in an early state of development (Ni-ferrite). In both cases, composition was controlled by mixing metalorganic precursors dissolved in solvents using a liquid delivery system. Films with excellent crystalline quality were deposited in both cases. Polycrystalline BST films displayed properties suitable for DRAM applications: charge storage densities > 80 fF/μm2 and leakage current density < 10−8 A/cm2 for films as thin as 15 nm. Growth mechanisms and rates were determined for the single component oxides of the ferrite films. Epitaxial NiFe204 films were deposited on MgO single crystal substrates at 650°C; x-ray rocking curves yielded FWHM values of 0.046°, commensurate with the substrate.
Magnetic and Crystalline Microstructure of SrRuO3 Thin Films
Authors: Marshall A. F. , Klein L. , Ahn C. H. , Dodge S. , Reiner J. , Antognazza L. , Mieville L. , Kapitulnik A. , Geballe T. H. , Beasley M. R. 
Published: April 2011

ABSTRACTThe relationship between the magnetic and crystalline microstructure of SrRu03 thin films is analyzed using transmission electron microscopy. Regions with a stripe magnetic domain structure in different orientations are observed in Lorentz imaging mode when the specimens are zero-field-cooled through the ferromagnetic transition temperature, Tc ≈ 150K. The different orientations of the stripe regions correspond to different crystallographic domains as determined by electron diffraction and magnetic image contrast; all of the six possible orientations of the orthorhombic SrRuO3 structure grown epitaxially on a SrTiO3 cubic substrate are identified. The results show that the uniaxial anisotropy indicated for these multi(crystal)domain films is the same as that determined for single crystal films by bulk magnetization measurements, and is therefore primarily magnetocrystalline in nature.
The Effect of Miscut Angle and Miscut Direction of Vicinal (001) SrTiO3 Substrates on The Domain Structure of Epitaxial SrRuO3 Thin Films
Authors: Gan Q. , Rao R. A. , Eom C.B 
Published: April 2011

ABSTRACTWe have grown epitaxial thin films of isotropie metallic oxide SrRuC>3 on both exact and vicinal (001) SrTiO3 substrates with miscut angle (α) up to 5.0° and miscut direction (β) up to 37° away from the in-plane [010] axis. The effects of both α and β on the epitaxial growth and domain structure of epitaxial SrRuC>3 thin films were studied by x-ray diffraction and atomic force microscopy (AFM). On vicinal SrTiO3 substrates with a large miscut angle (α = 1.7°, 2.0°, 4.1°, and 5.0°) and miscut direction close to the [010] axis, single crystal epitaxial (110)° SrRuO3 thin films were obtained. [The superscript o refers to the Miller indices based on the orthorhombic unit cell.] Decreasing the substrate miscut angle or aligning the miscut direction close to the [110] axis (β = 45°) resulted in an increase of 90° domains in the plane. The films grown on vicinal substrates displayed a significant improvement in crystalline quality and in-plane epitaxial alignment as compared to the films grown on exact (001) SrTiO3 substrates. AFM revealed that as the miscut angle increased the growth mechanism changed from two dimensional nucleation to step flow growth.
Fe3O4/MgO Superlattices Grown on MgO(OOl) and Fe/MgO(001) by Molecular Beam Epitaxy
Authors: Chern G. , Chang C. L. , Chean Y. R. 
Published: April 2011

AbstractThe growth and structural characterization of Fe3O4/MgO superlattices on MgO(001) and Fe-coated MgO(001) are compared. Long modulated coherence and sharp interface are revealed by X-ray diffraction and reflection high energy electron diffraction (RHEED). For the superlattice grown directly on MgO(001), high crystalline quality is comparable to the previous report on the oxide superlattice system. For the superlattice grown on Fe/MgO(001), both chemical and lattice spacing modulations are maintained which is different from the polycrystlline structure of the Fe3O4/NiO grown on Ni-based system. This superiority of the growth on Fe-coated surface results from both the smaller lattice mismatch and the oxidation state of Fe relative to MgO. The changes of the RHEED intensity during the growth of these superlattices are also measured. The evolution of the oxide interface during the growth of Fe3O4/MgO is quantitatively presented.
Adsorption-Controlled Growth of Ferroelectric PbTiO, and Bi4Ti3O12 Films for Nonvolatile Memory Applications by MBE
Authors: Theis C. D. , Yeh J. , Hawley M. E. , Brown G. W. , Schlom D. G. 
Published: April 2011

ABSTRACTEpitaxial PbTiO3 and Bi4Ti3O12 thin films have been grown on (100) SrTiO3 and (100) LaAlO3 substrates by reactive molecular beam epitaxy (MBE). Titanium is supplied to the film in the form of shuttered bursts each containing a one monolayer dose of titanium atoms for the growth of PbTi03 and three monolayers for the growth of Bi4Ti3O12. Lead, bismuth, and ozone are continuously supplied to the surface of the depositing film. Growth of phase pure, c-axis oriented epitaxial films with bulk lattice constants is achieved using an overpressure of these volatile species. With the proper choice of substrate temperature (600 – 650 °C) and ozone background pressure (PO3 = 2×10−5 Torr), the excess of the volatile metals and ozone desorb from the surface of the depositing film leaving a phase-pure stoichiometric crystal. The smooth PbTiO3 surface morphology revealed by atomic force microscopy (AFM) suggests that the PbTiO3 films grow in a layer-by-layer fashion. In contrast the Bi4Ti3O12 films contain islands which evolve either continuously or around screw dislocations via a spiral-type growth mechanism.
Effect of Electron Incidence in Epitaxial Growth of CeO2(110) Layers on Si(100) Substrates
Authors: Inoue Tomoyasu , Yamamoto Yasuhiro , Satoh Masataka 
Published: April 2011

ABSTRACTWith the aim of lowering epitaxial growth temperature, the effect of electron incidence is studied in the epitaxial growth of CeO2(110) layers on Si(100) substrates by electron-beam evaporation in an ultrahigh vacuum. Two growth methods are employed: evaporation under substrate bias application and electron-beam assisted evaporation. In evaporation at positive substrate bias, electrons and anions from an evaporation source are attracted to the substrate surface, resulting in successful epitaxial temperature lowering. It is clarified that facilitation of the epitaxial growth is attributed only to electron incidence. The electronic current component is measured to be on the order of 10−4 A, about half of the total current. In using electron-beam assisted evaporation for higher current (10−3 A), electron-beam irradiation is demonstrated to have a much greater effect in both the growth temperature lowering and the crystalline quality improvement. The epitaxial growth facilitation effect increases with electron energy in both evaporation methods. It is clarified that the epitaxial growth temperature is lowered to 720°C, i. e., epitaxial growth temperature lowering of ∼100°C compared with the conventional growth method, both by evaporation with substrate bias at +240 V and 240 eV-electron-beam assisted evaporation, wherein the latter produces higher crystalline quality layers.
Effects of Arriving Atom Kinetic Energy on the Structure and Magnetic Properties of Thin Sputter-Deposited Films
Authors: Wilson R. J. , Minvielle T. J. , Hildner M. L. , White R. L. 
Published: April 2011

ABSTRACTThin multilayer films are of growing importance as magnetic sensors. One key parameter in their performance is the interlayer magnetic coupling field which can vary in both sign and strength. Experiments performed to explore the effects of sputter deposition methods on the coupling fields observed for Co/Cu multilayers and spin valves on single crystal substrates are described. Scanning Tunneling Microscopy is used to qualitatively understand the large differences in observed coupling fields.
Magnetic Properties and Structure of Metallic Multilayers Investigated by NMR
Authors: Panissod P. , Mèny C. , Wójcik M. , Jedryka E. 
Published: April 2011

ABSTRACTAs a probe of the short range chemical and topological order, NMR is useful for structural investigations of magnetic multilayers (interface structure and composition, bulk phases and defects, strains). The magnetic character of the raw data makes it also possible to study local magnetic properties of these composite systems, and to correlate them with local structural features. The hyperfine field is the first output of an NMR experiment which gives a direct insight on the local magnetization in ferromagnets. NMR is also sensitive to the restoring torque exerted on the electronic moment by the local magnetic anisotropy and/or exchange and dipolar couplings. Combined with the fact that the various parts of a sample (atomic planes involved in the interfaces, bulk phases and bulk defects) can be discriminated in the spectra, the magnetic information contained in the data allows to probe quantitatively or, at least, to place on a relative scale, the different magnetic responses of the different parts of a sample. We present here the relevant results which we have obtained in the course of our investigations of Co based multilayers and spin valves (interface magnetic profiles, inhomogeneities of magnetic anisotropy and of magnetic coupling).
Fabrication of Micron Scale Magnetic Nickel Features by Selective Area Organometallic Chemical Vapor Deposition
Authors: Welipitiya D. , Borca C. N. , Dowben P. A. , Gobulukoglu I. , Jiang Hong , Robertson B. W. , Zhang Jiandi 
Published: April 2011

AbstractWe demonstrate that it is possible to deposit a wide range of magnetic features, using photoassisted and electron radiation induced selective area organometallic chemical vapor deposition. Large arrays of identical micron to nano scale Ni features were deposited by these methods. Their magnetic properties were studied by alternating gradient force magnetometry as well as magnetic force microscopy. Our morphological and magnetic measurements show that the structures are spatially well defined, and the magnetic properties are related to the structural shapes of the features.