bluuebunny/crossref_metadata_2025_split huggingface dataset:
Rie-Induced Damage to Single Crystal Silicon Monitored with Nondestructive Thermal Waves
Authors: Geraghty Patrice , Smith W. Lee 
Published: March 2011

AbstractA method is presented to nondestructively monitor damage in silicon caused by reactive-ion or plasma etching on actual product wafers or test wafers immediately following the etch step.Data is taken on product wafers by scanning the 1-micron laser probe spot across and along the bottom of RIE-etched trenches.The onset of silicon damage brings a marked increase to the thermal wave (TW) signal: as the RIE bias voltage was increased from -60 volts to -250 volts, the TW signal increased monotonically by 1230%.The effects of other RIE process parameters on the damage level were also measured.This study allowed the RIE process variables to be adjusted to minimize damage to the silicon surface.
The Chemical Etch of Tungsten Single Crystals and Foils With XeF2
Authors: Bensaoula A. , Stozier J. , Ignatiev A. , Wolfe J. 
Published: March 2011

AbstractThe chemical etching of W(100) single crystals and polycrystalline tungsten foils using a XeF2 molecular beam has been studied with and without simultaneous bombardment by energetic inert ions.The surface fluorine concentration, measured under different XeF2 pressures (10−7 to 10−5 torr) and ion current densities, is found to be always less than a monolayer.Depth profiles of the fluorine layer show that in both single crystal and poly samples, the fluorine is surface localized, although slightly deeper in the W(100).A kinetic model is presented to account for the enhanced etching under ion bombardment.The mechanism proposed is mainly a defect driven enhancement of the etch yield.This model is consistent with both the fluorine concentrations measured in this work as well as the etch product yields reported by Winters.
The Effects of ion Bombardment in Plasma Polymerization
Authors: Buss Richard J. 
Published: March 2011

AbstractA molecular beam probe technique has been used to investigate the role of ion bombardment of the film surface during the plasma polymeriz-ation process.Thin films have been deposited in a vacuum chamber from a molecular beam containing all the plasma species and these were compared with similar deposits from a beam with the charged particles deflected away.A comparison was made of deposition rates, vis/UV and IR absorption spectra of the films.It was found that the deposition rate was increased 20% with the elimination of ion bombardment.Ions incident on the film surface during deposition cause a net ablation of the film.The ion bombardment also causes an increased absorption of UV and near UV light by the film resulting in a noticeable yellowing.No change was observed in the IR spectra of the films with ion deflection.
Reactive Ion Etching of WSi0.6 Gates for GaAs MESFETS
Authors: Lin C. L. , Hoh Peter D. 
Published: March 2011

AbstractA process for reactive ion etching of 1μm and sub-micron WSi0.6 gates for GaAs MESFET integrated circuits has been developed.Using a CF4/O2 plasma, a 200am film of WSi0.6 could be etched in ≃ 5 minutes.This is sufficiently long for accurate process monitoring.A vertical edge profile has been obtained which is desirable for a self-aligned MESFET process.To achieve the vertical edge, careful control of the degree of over etch was necessary.This was accomplished by monitoring the intensity profile of a laser beam reflected from the wafer being etched.The widths of lines etched in WSi0.6 closely matched those of the resist pattern.Both 1μm and sub-micron FET's were fabricated.with excellent linewidth control and electrical characteristics
Reactive Ion Etching of Molybdenum In CF4/O2 Plasma
Authors: Park Seong-Ju , Sun C. P. , Yeh J. T. , Cataldo J. K. , Metropoulos N. 
Published: March 2011

AbstractA mechanistic study of Mo etching in a CF4/O2 plasma has been performed using optical emission spectroscopy, mass spectrometry and x-ray photoelectron spectroscopy.Etching characteristics of Mo for a wide range of conditions relevant to plasma processing are also reported.Addition of small amount of O2 to the CF4 plasma dramatically increases the Mo etch rates, as well as concentrations of 0 and F in plasma.However, further addition of O2 above 50 % leads to decrease in etch rates.Two types of neutral molybdenum oxifluorides and a trace amount of molybdenum hexafluoride were observed in the effluent gas.Comparing the etch rates with the concentration changes of F and 0 with and without Mo present in plasma, it is suggested that Mo is chemically etched by F and 0.Atomic oxygen enhances the etch rate by increasing the F concentration in the plasma as well as by removing a carbon layer forming desorbed CO on the surface.XPS and AES analysis results for the etched surface inferred that chemisorbed fluorocarbon radicals dissociate into carbon and fluorine atoms, which in turn form a passivating graphite-like layer and a volatile molybdenum oxifluoride and molybdenum hexafluoride layer.
The ETCH Mechanism for Al2O3 in Fluorine and Chlorine Based RF Dry Etch Plasmas
Authors: Hoek W. G. M. van Den 
Published: March 2011

AbstractThe etch behaviour of Al2O3 was studied in Ar, CHF3/Ar, CF4/O2 and Cl2 low pressure RIE plasmas.The influence of dc self-bias voltage, wafer temperature, gas flow and pressure on the Al2O3 etch behaviour was investigated.This was compared with the etch behaviour of SiO2, Mo, Au and Si under the same conditions.It was found that even though aluminum does not form volatile fluorides addition of CHF3 to an Ar plasma resulted in a ninefold increase in the A12O3 etch rate.This compares to a fivefold increase in the SiO2 etch rate and a 20% decrease in Au etch rate.An A12O3 etch mechanism for fluorine based plasmas is proposed, comprising of the formation of AlFx and its subsequent removal under influence of high energy ion bombardment.The latter appears to be the rate limiting step.
Mechanical Reliability of Z5u Multilayer Capacitors
Authors: Mchenry Kelly D. , Koepke Barry G. 
Published: March 2011

AbstractDynamic fatigue experiments were performed on Z5U multilayer capacitors in an attempt to correlate microflaw fracture behavior due to intrinsic processing defects within the material with predictions of fracture behavior based on macrocrack fracture mechanics determinations. A direct correlation between microflaw fracture behavior and predictions based upon macrocrack fracture mechanics techniques was not observable due to the wide size range of processing defects. A systematic post-mortem examination of fracture surfaces was used to identify fracture origins and sort individual test specimens into groups with equivalent flaw sizes. The correlation between microflaw and macrocrack fracture behavior became more “sorting” the dynamic fatigue data into groups withm oereq uoibvvailoeunst aflfatwer sizes.
Adhesion Behavior of PIQ to Si/SiO2 Surfaces
Authors: de Hodgins O. C. , Uhlmann D. R. , Tesoro G. C. , Angilello J. 
Published: March 2011

AbstractThe present paper reports the results of an investigation of the adhesion characteristics of PIQ13, an isoindaloquin-azolinedione-modified polyimide, to silicon wafers. The wafers were used both untreated and pretreated with a layer of CVD SiO2. Also investigated was the adhesion behavior of a condensation-type polyimide, P15878. A comparison is made between the behavior of the PIQ with two different coupling agents, an aluminum chelate (Coupler 3) and γ-aminopropyltriethoxy silane (A-1100). Superior adhesion performance of the A-1100 is indicated; and with A-1100, the adhesion of the two resins is similar.
Copper Interactions in Thick Film Multilayer Ceramics: Dielectric Blushing and Performance
Authors: Button D. P. , Siuta V. P. 
Published: March 2011

AbstractAs the popularity of copper metallizations grows in ceramic-based electronic applications, an understanding of copper-ceramic interactions during firing assumes greater technological importance. Copper metallizations often interact with thick film microcircuit dielectrics during the firing of multilayer interconnects to yield rosy discoloration, or so-called blushing or staining of this insulating ceramic. In the conventional filled-glass dielectrics studied here, blushing is concentrated at special interfaces over Cu conductors where submicron Cu precipitates are localized. Several firing strategies which improve binder burnout can be employed using standard belt furnaces to depress, if not prevent, this precipitation. A multistage blushing mechanism is proposed that is dominated by the reduction of Cu ions in the ceramic by carbonaceous products formed when firing dielectric compositions under non-oxidizing conditions. Dielectric glass composition also plays an important role with respect to solid state Cu ion interdiffusion. Theoretical and experimental analyses show that materials interactions responsible for blushing in conventionally-processed CMS (copper multilayer system) microcircuits degrade neither dielectric performance nor reliability. Microcircuit dielectrics metallized by Cu compare favorably to noble metal systems including gold, an accepted military standard. CMS dielectrics exhibit high activation barriers for ionic conductivity, and an absence of shorting due to solid state diffusion during high temperature/ high bias testing.
Monolithic Multicomponents Ceramic (MMC) Substrate
Authors: Utsumi Kazuaki , Shimada Yuzo , Takamizawa Hideo 
Published: March 2011

AbstractNew monolithic multicomponents ceramic (MMC) substrates were made using a glass-ceramic material, low firing high dielectric constant ceramic material, metal oxide resistance materials, piezoelectric ceramic material and metal conductors. In the MMC substrate, many passive components, such as capacitors, resistors and wiring conductors can be included. In addition, designed-space can be formed in the substrate with new designed-space forming technology.The new MMC substrates have the following excellent characteristics.
1)A wide range of capacitors can be formed in the substrate.(10pF˜3μF).2)A wide range of resistors can be formed in the substrate.(10Ω/π∼1MΩ/π).3)A plurality of resistor and capacitor elements can be three-dimensionally constructed in the substrate.4)Designed-space can be formed in the substrate.5)Miniaturization and cost reduction can be accomplished in the substrate.The MMC substrates were applied to voltage controlled crystal oscillators (VCXO), CR active filters, memory cards for personal computers, AC thin film electroluminescent (AC TFEL) devices and drop-on demand ink jet heads.These devices using MMC substrate showed good electrical propeties and achieved miniaturization, multifunction and cost reduction. The new monolithic multicomponent ceramic substrate can be applied to many kinds of hybrid microcircuits and electronic components and devices.
Deformation Properties of a Lead-Tin (95–5) Solder
Authors: Stone D. , Wilson H. , Subrahmanyan R. , Li Che-Yu 
Published: March 2011

AbstractConsecutive load relaxation tests are performed on a 95 Pb-5 Sn specimen near room temperature, then at 69 ° C and 1°C. The initial relaxation runs at room temperature show evidence of static recovery, which diminishes after a number of load relaxations have been performed. Evidence of grain boundary sliding is also found. The specimen hardens slowly at 69°C, as manifested by successive load relaxation data falling at lower strain rates. At 1°C, the material slowly softens. These temperature effects are believed to result from a dislocation-solute interaction involving tin atoms in the lead matrix.
Low Permittivity SiO2/Void Nanocomposite Films
Authors: Das Amitabh , Messier R. , Gururaja T. R. , Cross L. E. 
Published: March 2011

AbstractA novel approach for preparing porous SiO2 thin films by sputter deposi-tion is being developed. The porosity is introduced to reduce the dielectric permittivity of the film to less than 3 for potential use in packaging high speed VLSIs. In the first approach, amorphous silicon is initially deposited to produce a columnar structure with a thickness of 25μm, followed by etching and thermal oxidation to result in closely spaced SiO2 pillars. Capping the structure by a thin film (0.1μm), silica gel layer provides the support for strip line traces. In the second approach, porous SiO2 films are prepared by reactive sputtering. The dielectric properties of the sputter deposited SiO2 films are presented.
Phase Equilibria in Complex Solder Systems
Authors: Notis M. R. , Tarby S. K. , Cawley T. 
Published: March 2011

AbstractTernary solder alloys have come into wide use in chip bonding, printed circuit board connection, and in ceramic package sealing applications. Little is known concerning phase equilibria in many of these systems. Methods for predicting phase equilibria in the ternary (Pb+Sn)+Ag system using CAD (computer aided design) are described, and a predicted value for the ternary eutectic temperature is compared with values obtained by differential scanning calorimetry (DSC) for this system.
Dielectric Properties of Sol - Gel Silica Glasses
Authors: Chandrashekhar G. V. , Shafer M. W. 
Published: March 2011

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.
Synthesis, Structure and Applications of TiO2 Gels
Authors: Livage J. 
Published: March 2011

AbstractTiO2 gels are usually obtained through hydrolysis of titanium alkoxides. Chemical additives can however react with the precursor at a molecular level and therefore modify the hydrolysis-condensation reactions. Several examples will be described :acetic acid, acetylacetone or Cr(acac)3. The whole sol-gel process is followed all the way from the precursors to the gel and each step is characterized by spectroscopic experiments (Infra-red, N.M.R, E.S.R.). Some electronic properties of TiO2 gels are then described. Chemical addi-tives allow an optimization of thý sol-gel process according to each speci-fic applications : electrochromic display devices, photoanodes or photoche-mical reactions.
Crystallization of Oxide Films Derived from Metallo-Organic Precursors
Authors: Chen K. C. , Janah A. , Mackenzie J. D. 
Published: March 2011

AbstractFerroelectric lead zirconate titanate and ferrimagnetic nickel ferrite films were prepared by dip-coating of metal organic solutions. In the amorphous state, both films were porous, with specific porous surface areas on the order of tens of square meters. Crystallization temperatures were in the range of 400 – 500°C. The crystallization kinetics of the porous films and powders of both compounds have been studied by using non-isothermal DSC and isothermal XRD. The kinetic parameters were empirically described by the Johnson-Mehl-Avrami transformation equation α = 1 - exp(-Ktn). The order of reaction (n) of PZT film is approximately 1 but that of the powder is 2, and their activation energies are 80 and 70 kcal/mole, respectively. It was found that the PZT film crystallizes more easily than the powder at the same temperature. The nickel ferrite film and powder, on the other hand, have similar n values ranging from 0.6 to 0.7, with activation energies of 20 and 35 kcal/mole, respectively. The possible mechanisms were also briefly discussed.
Patterned Macrovoids for Dielectric Constant Control of High Frequency Circuit Substrates
Authors: Kahn M. , Kriese B. 
Published: March 2011

AbstractFugitive ink and tape technology permit the inclusion of flat voids at predetermined locations in ceramic microcircuit substrates. Calculations show that critical stray capacitances can be reduced by as much as 65% and the propagation delay of microstrip transmission lines by 30% and more. The selectivity of the void location permits the retention of the full thermal conductance of the substrate under heat dissipating elements.
Ultra-Low Dielectric Permitfivity Ceramics and Composites for Packaging Applications
Authors: Cross L. E. , Gururaja T. R. 
Published: March 2011

AbstractTo accomplish the interconnect systems which will be required in the next generation of very high speed Ga:As digital ICs, it will be necessary to use strip line techniques for signal traces which must be deposited over very low permittivity dielectric substration. Materials with relative dielectric permittivities k 〈 3.0 and very low loss tangent up to microwave frequencies will be required. For ceramic systems such values are impossible to achieve in single phase monoliths, and composite approaches are required. Techniques for processing ceramic insulators which permit the introduction of controlled pore structures are discussed. The introduction of pores degrades some other desirable properties of the ceramic such as mechanical strength and thermal conductivity so that control of both scale and location of pores is desirable.Materials investigated include sol-gel processed silica films and monoliths, reactively sputtered silica, etched glass compositions and Macro-Defect-Free (MDF) cements.
Fracture Behavior of Ceramics Used in Multilayer Capacitors
Authors: Baker Theresa L. , Freiman Stephen W. 
Published: March 2011

AbstractThis study involved the determination of the effects of composition and microstructure on the fracture toughness and susceptibility to environmentally enhanced crack growth of several ceramic materials used in multilayer capacitors. Indentation-fracture procedures were used to measure KIC as well as to assess the possible effects of internal stresses on the fracture behavior of these materials and to correlate dielectric aging phenomena with strength. The environmentally enhanced crack growth behavior of these materials was determined by conducting dynamic fatigue tests in water.
Residual Stresses and Damage in Multilayer Ceramic/Metal Packages
Authors: Evans A. G. , Hsueh C. H. 
Published: March 2011

AbstractMultilayer ceramic/metal modules are subject to stresses that develop both upon co-sintering and upon cooling. The sources and magnitudes of these stresses are described and discussed. The co-sintering induced stresses derive from densification-rate mismatch and can be analyzed in terms of constitutive laws that describe the densification and creep of partially dense ceramic and metal bodies. Cooling induced stresses are associated with thermal contraction mismatch and are strongly influenced by the plastic flow laws for porous metals. Typical stresses produced during co-sintering and cooling are calculated and techniques for minimizing such stresses are discussed and analyzed. Mechanical damage, manifest as brittle cracks and creep cracks, are also described and analyzed. Critical values of material parameters that exclude extensive crack damage are then emphasized, based on models of crack propagation.
Studies of Critical Phenomena and Phase Transition with SANS and DKD in the Polymerblend PVME-PSD
Authors: Schwahn D. , Mortensen K. , Yee-Madeira H. 
Published: March 2011

AbstractCritical behaviour of PSD-PVME polymer blends are presented. Spinodal and binodal transition temperatures have been determined by the use of a SANS-camera, and non-meanfield characteristics have been observed close to the critical point. A dynamic decomposition study has been performed by the use of a neutron double crystal diffraction.
SANS Studies of the Configurations of Single Chains in Heterogeneous Block Copolymers
Authors: Berney C. V. , Cheng P. , Kofinas P. , Cohen R. E. 
Published: March 2011

AbstractSmall-angle neutron scattering studies of polystyrene-polybutadiene diblock copolymers of spherical morphology are discussed, with emphasis on the effect of this morphology on the spatial organization of the polymer chains. Three particular cases are examined: (i) the distribution within the matrix of added (matrix) homopolymer, (ii) the distribution within the spherical microdomains of added (microdomain) homopolymer, and (iii) isotopic effects occurring in the B domains when a B-deuterated diblock SBd is blended with a normal sample SB. Deviations from ideal mixing are found in all three cases.
Neutron Scattering from Charged Polymer Latices
Authors: Hayter John B. 
Published: March 2011

AbstractAqueous suspensions of charged polymer latex particles exhibit several forms of ordered structure, the particular form depending on the size, number density and charge of the latex particles, and on the ionic strength of the aqueous medium. At low ionic strength, the inter-particle potential may become sufficiently long-ranged to generate crystalline order, which usually shows bcc symmetry at low density and becomes fcc above about 3% volume fraction of latex in the system. As the ionic strength increases, the crystalline structure melts, and ordered liquid structures develop. Light scattering may be used to study these structures at low density, but at higher density, where the opacity of the suspensions renders optical techniques intractable, neutron scattering must be used.This paper will review some of the recent small-angle neutron scattering experiments on polymer latex suspensions, in the light of new theoretical methods which permit in situ analysis of the particle size and charge. The discussion will also encompass new experimental methods for studying latex structures under dynamic shear conditions.
Local Aspects of Non-Elastic Deformation in Atactic Glassy Polystyrene
Authors: Coulon G. , Lefebvre J. M. , Rawiso M. 
Published: March 2011

AbstractAtactic glassy polystyrene has been deformed by shear banding. The influence of the macroscopic shear stress down to a scale smaller than the dimensions of the macromolecules has been investigated by small-angle neutron scattering. The chemical resolution has been improved by using isotopic labelling on different parts of the monomer unit. The analysis of the experimental scattering curves has been made according to the thin thread model with a superimposed thickness. On the other hand, the contrast variation method has been applied in order to determine both the structure factor of the phenyl rings and that of the backbone part of the chain. This allows us to precise the influence of non-elastic deformation on the local structure of the chain.
Coil Relaxation in Uniaxially Deformed Polymer Melt
Authors: Mortensen Kell , Kramer Ole , Batsberg Walther , Fetters L. J. 
Published: March 2011

AbstractSANS studies on the relaxation of an amorphous polymer melt is reported. Just after the uniaxial elongation the chains deform affinely. Shortly thereafter the SANS results give evidence of chain contraction. Some randomization is observed long before the reptation time is reached.