bluuebunny/crossref_metadata_2025_split huggingface dataset:
Small area variation and geographic and patient‐specific determinants of metabolic testing in antipsychotic users
Authors: Morrato Elaine H. , Druss Benjamin G. , Hartung Daniel M. , Valuck Robert J. , Thomas Deborah , Allen Richard , Campagna Elizabeth , Newcomer John W. 
Published: November 2010

AbstractPurposeThe American Diabetes Association and American Psychiatric Association recommend metabolic monitoring for all patients using second‐generation antipsychotic (SGA) drugs. We estimated glucose and lipid testing rates among SGA‐users from three state Medicaid programs and investigated small area variation and patient and geographic determinants of testing.MethodsA retrospective new‐user cohort study using Medicaid claims data from California, Missouri, and Oregon was conducted among 30 563 patients in 207 counties starting SGA medication September 2004–December 2005. Adjusted odds ratios for state, county, and patient factors associated with testing were calculated from multivariable hierarchical logistic regression models.ResultsMean 6‐month testing rates were 51.6% (glucose) and 26.2% (lipids). Screening rates were positively associated with the number of Type 2 diabetes risk factors (RF) present: glucose −39% (0 RF) to 82% (5 RF); lipids −13% (0 RF) to 66% (5 RF). A four‐fold difference in glucose testing rates (21–85%) and a greater than six‐fold difference in lipid testing rates (0–62%) were observed between counties. In the adjusted regression models, age, cardiometabolic co‐morbidity (diabetes, dyslipidemia), serious mental illness, persistent use of SGAs, and frequency of non‐psychiatric medical office visits were significant determinants of glucose and lipid testing. Lipid testing was more likely for children and adults in California, as was glucose testing for children.ConclusionsGlucose and lipid testing among SGA‐users varied significantly between states, counties, and by patient characteristics. More effort is needed to understand provider and system reasons for testing disparities in order to inform risk management quality improvement interventions. Copyright © 2010 John Wiley & Sons, Ltd.
A novel and rapid fabrication for microlens arrays using microinjection molding
Authors: Lou Chin‐Wan , Chiang Yuh‐Chyun , Cheng Hsin‐Chung , Wu Ching‐Zong , Huang Chiung‐Fang , Wu Chih‐Wei , Shen Yung‐Kang , Lin Yi 
Published: November 2010

AbstractThis work reports a novel and effective procedure for manufacturing the mold insert of microlens arrays. First, the microlens arrays master is formed using room‐temperature imprint lithography and photoresist reflow process. Next, electroforming is carried out to fabriccate the metal mold insert from the master. Finally, microinjection molding is used to replicate the molded microlens arrays. The 200 × 200 arrays of molded microlens, with a diameter of 150 μm, a pitch of 200 μm, and a sag height of 11.29 μm for polycarbonate (PC) material and 11.24 μm for polymethylmethacrylate (PMMA) material have been successfully fabricated. The moldability for PMMA material is better than PC material on molded microlens arrays. The average surface roughness of the molded microlens arrays is 4.53 nm for PMMA material and 4.81 nm for PC material. The mold temperature is the most important processing factor for the focal length and sag height of molded microlens arrays. POLYM. ENG. SCI., 2011. © 2010 Society of Plastics Engineers.
Preparation and properties of melt‐mixed metallocene polyethylene/silica nanocomposites
Authors: Lai Sun‐Mou , Huang C.‐Y. , Li S.‐C. , Chen Y.‐H. , Hsu H.‐C. , Yu Y.‐F. , Hsiou Yu‐Feng 
Published: November 2010

AbstractMetallocene polyethylene (mPE)/silica nanocomposites were prepared via melt mixing. Two types of commercial fumed nanosilica, bare silica (A200) and organic modified silica (R974), were incorporated to improve the mechanical properties of the nanocomposites. Transmission electron microscopy, atomic force microscopy, and scanning electron microscopy revealed that the modified silica was dispersed slightly better within the mPE matrix. No distinct effects on the thermal behaviors of the fast‐crystallizing mPE matrix were observed with variations in both the silica dosages and types. Thermal stability was enhanced through the addition of nanosilica, with or without surface treatment. The surface‐modified silica system showed slightly higher tensile strength and Young's modulus compared with the bare silica system, as evidenced by a rheological study using a Cole‐Cole plot to assess enhanced polymer matrix‐dispersed silica interactions, especially for high dosages of organic modified silica. A limited increment in the dynamic storage modulus for modified silica cases, completely opposite of that observed for bare silica cases, was due to the low‐aspect ratio of smaller agglomerates from highly dispersed organic modified silica within the mPE matrix. POLYM. ENG. SCI., 2011. © 2010 Society of Plastics Engineers.
Purification and characterization of poly(L‐lactic acid) depolymerase from Pseudomonas sp. strain DS04‐T
Authors: Wang Zhanyong , Wang Yan , Guo Ziqi , Li Fan , Chen Shan 
Published: November 2010

AbstractPoly(L‐lactic acid) (PLA)‐degrading Pseudomonas sp. strain DS04‐T was isolated from an activated sludge sample. A novel PLA depolymerase with a molecular weight of 34 kDa was purified to homogeneity from the culture supernatant of strain DS04‐T. The optimum pH and temperature of the PLA depolymerase are 8.5 and 50°C, respectively. The PLA depolymerase can also degrade triolein, poly(β‐hydroxybutyrate), and poly(ε‐caprolactone). Na+ and K+ enhance the enzyme activity, whereas Zn2+, Mg2+, Cu2+, and Fe2+ inhibit it. The inhibition effect of different chemicals on the PLA depolymerase activity were examined, in which ethylenediaminetetraacetic acid was found to have a significant inhibitory effect. The main degradation product of the depolymerase is identified as lactic acid monomer by mass spectrometric analysis. POLYM. ENG. SCI., 2011. © 2010 Society of Plastics Engineers.
Morphology, mechanical properties, and thermal stability of rigid PVC/clay nanocomposites
Authors: Mondragón Margarita , Sánchez‐Valdés Saúl , Sanchez‐Espíndola María E. , Rivera‐López Jesús E. 
Published: November 2010

AbstractPVC/Poly(ε‐caprolactone) (PCL)/organophilic‐montmorillonite (OMMT) and PVC/Polylactide (PLA)/OMMT nanocomposites were prepared by a two‐step process. PCL/OMMT and PLA/OMMT master batches were prepared by melt blending using a two‐roller mill first, and then they were blended with PVC via extrusion. PVC/OMMT nanocomposites were also prepared using a two‐roller mill. Morphology, mechanical properties, and thermal stability were investigated. The formation of exfoliated or intercalated nanocomposites was confirmed by X‐ray diffraction (XRD) and transmission electron microscopy (TEM). Only the PVC/PCL/OMMT nanocomposite showed both higher tensile strength and stiffness than unfilled PVC. Atomic force microscopy (AFM) indicated dependency of this behavior not only on the clay dispersion, but also on the adhesion between the OMMT and the polymer matrix. Furthermore, scanning electron microscopy (SEM) showed that the large plastic deformation of the PVC/PCL matrix also contributed to the strength increase of the PVC nanocomposites. The effect of PCL/OMMT on the improvement of the thermal stability of PVC was remarkable while the effect of PLA/OMMT was moderate. POLYM. ENG. SCI., 2011. © 2010 Society of Plastics Engineers.
Compensated silicon crystals by metallurgy route
Authors: Abdullin Kh. A. , Beketov B. A. , Chumikov G. N. , Mukashev B. N. , Tamendarov M. F. , Turmagambetov T. S. , Page M. R. , Kline D. M. 
Published: November 2010

AbstractThe alumothermic reduction of silica from silicate slag was studied for obtaining a silicon‐containing alloy (SCA). A synthetic slag (SS) with composition close to that of phosphorous industry waste (PIW) is used. SS consists of more than 90% silicon dioxide, calcium oxide and less than l0% of other element's oxides. SCA was upgraded by acid leaching up to pure silicon of a fine powder structure. Compensated poly‐ and mono‐crystalline silicon, with resistivity from 0.6 (bottom of crystal) to 4 (top of crystal) Ohm · cm, was grown by Czochralski method using this powder. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
IR studies of oxygen‐related and carbon‐related defects in Sn‐doped silicon
Authors: Londos Charalampos A. , Andrianakis Andreas , Aliprantis Dimitris , Sgourou Efstratia N. , Ohyama Hidenori 
Published: November 2010

AbstractThe ability of tin (Sn) to capture vacancies in silicon material attracts considerable interest in relation with electronic applications where radiation hardness is necessary. In this sense the full knowledge of the behavior of radiation‐induced defects in Sn‐doped Si is particularly important. The present report gives a systematic study of the evolution of the vacancy‐oxygen (VOn, 1≤ n≤ 6) defects and the carbon‐oxygen (CiOi) defect in electron‐irradiated Sn‐doped Cz‐Si containing carbon. The radiation‐induced defects and their reactions were investigated by Infrared Spectroscopy (IR) in the course of 20 min isochronal anneals from room temperature up to ∼750 °C. Interestingly, in Sn‐doped Cz‐Si samples we were able to monitor and study IR bands correlated with VO5/VO6 defects. In particular, we tentatively attributed two bands at 1037, 1051 cm‐1 to the VO5 defect, and two other bands at 967, 1005 cm‐1 to the VO6 defect. Concerning carbon‐related defects, our results show that the disappearance of the 862 cm‐1 band of the CiOidefect is accompanied in the spectra by the emergence of a band at 1048 cm‐1 previously correlated with a CsO2i structure. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Effects of uniaxial stress on local vibration of a platinum‐hydrogen complex in silicon
Authors: Kamiura Y. , Higaki K. , Katayama K. , Mizukawa H. , Ishiyama T. , Yamashita Y. , Abe S. 
Published: November 2010

AbstractWe have studied stress‐induced splitting and shift of an infrared (IR) absorption line at 1880.7 cm‐1 of the Pt‐H1 complex in Si by Fourier‐transform IR (FT‐IR) spectroscopy at 10K combined with the application of uniaxial compressive stress up to 0.4 GPa. The line was split into two and three components under 〈100〉 and 〈111〉 stresses with intensity ratios of low‐ to high‐wavenumber components being 1:2 and 1:1:2, respectively. These results are consistent with C1h symmetry in the piezospectroscopic theory of Kaplyanskii and the ESR results observed by Mchedlidze et al. Under 〈110〉 stress, however, the line was split only into two components, contradicting C1h symmetry. Such inconsistency may be due to insufficient magnitude of stress. The split components were shifted linearly with increasing stress in the three directions. The isotope effects were observed for the Pt‐H1 complex. By replacing H with D, the IR line was shifted to 1358.5 cm‐1 and the 〈100〉 stress dependence of peak wavenumbers of two split components was weakened by a factor of 0.7. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Time variation of source‐drain current for organic field‐effect transistors with dipoles of insulator surface
Authors: Suemori Kouji , Taniguchi Misuzu , Uemura Sei , Yoshida Manabu , Hoshino Satoshi , Takada Noriyuki , Kodzasa Takahito , Kamata Toshiide 
Published: November 2010

AbstractTime variation of the source‐drain current for organic field‐effect transistors (OFETs) with aminopropyl and octadecyl groups on the insulator layer was examined. The source‐drain current of both OFETs decreased with time immediately after the application of the gate voltage. The decrease in the source‐drain current was very little in the OFET with an octadecyl group while it was very large in the OFET with an aminopropyl group. The origin of the decrease in the source‐drain current was attributed to the dipole of the aminopropyl and octadecyl groups. The decrease in the source‐drain current was observed in the OFET with the octadecyl group (that has a small dipole), indicating that the time variation of the source‐drain current is very sensitive to the dipole of the insulator surface. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Possibility for hole doping into amorphous InGaZnO4 films prepared by RF sputtering
Authors: Kobayashi Kenkichiro , Kohno Yoshiumi , Tomita Yasumasa , Maeda Yasuhisa , Matsushima Shigenori 
Published: November 2010

AbstractAmorphous InGaZnO4 (IGZO) films codoped with Al and N atoms were prepared by sputtering of targets consisting of IGZO and AlN powders in Ar + O2 atmospheres. No hole‐conductivity is seen in films deposited at 2×10‐3 Torr, whereas hole‐conductivity is found in films deposited at 2×10‐2 Torr at radio frequency powers of 60‐80 W in 0.3‐0.6% O2 atmospheres. The amorphous p‐type IGZO film has the resistivity of 210 Wcm, hole‐density of 7.5×1017 cm‐3, and mobility of 0.4 cm2/Vs. The rectification characteristic is obtained for a device constructed from Au, amorphous p‐type IGZO, and amorphous n‐type IGZO. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Selective‐area MOVPE of GaSb on GaAs (111)‐oriented substrates
Authors: Takayama Y. , Tomioka K. , Hara S. , Fukui T. , Motohisa J. 
Published: November 2010

AbstractWe report on the selective‐area metalorganic vapor phase epitxial growth of GaSb on (111)‐oriented GaAs sub‐ strates partially covered with a SiO2 mask layer. The mask pattern consisted of periodic circular openings with diameter ranging from 200 to 500 nm and pitch ranging from 500 nm to 3 µm. Selective‐area growth of GaSb was achieved on the (111)A substrates, while GaSb was grown in few parts of the mask openings on the (111)B substrate. In addition, exposure to an Sb‐precursor prior to the growth significantly affected the coverage of GaSb of the mask opening region, and it increases (decreases) on the (111)A ((111)B) substrate as compared to AsH3 exposure. The results are explained based on a model of exchange of Sb‐As at the initial stage of growth. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Strongly suppressed multi‐photon generation from a single quantum dot in a metal‐embedded structure
Authors: Nakajima Hideaki , Ekuni Shingo , Kumano Hidekazu , Idutsu Yasuhiro , Miyamura Souta , Kato Daimotsu , Ida Sotaro , Sasakura Hirotaka , Suemune Ikuo 
Published: November 2010

AbstractWe introduce a novel metal‐embedded semiconductor pillar structure including quantum dots as highly efficient single‐photon sources for quantum information applications. We have developed related processes for fabricating the proposed structure and have demonstrated strongly suppressed multi‐photon generation and improved photon extraction efficiency. As a result, under non‐resonant excitation, which is highly preferable for practical use, single‐photon purity with g(2)(0) as low as 0.015 has been measured. The extremely small semiconductor volume of the metal embedded structure is a crucial factor for this observation. Moreover, single‐photon generation from a single quantum dot at a rate of up to 6.4 million per second has been achieved. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electric properties of aqueous grown ZnO nanorods on Au/Ti/Si substrates
Authors: Ogata Ken‐ichi , Dobashi Hideaki , Russel Paul , Koike Kazuto , Sasa Shigehiko , Inoue Masataka , Yano Mitsuaki 
Published: November 2010

AbstractElectric properties of aqueous grown ZnO nanorods were investigated. Vertical current measurement through the top 20‐nm‐thick Au electrode/ZnO nanorods/bottom Au film structure showed asymmetric I‐V properties and was discussed in terms of different interface properties between ZnO nanorods and Au. Schottky barrier height in top Au electrode and ZnO nanorods was estimated to be 0.22eV based on core level X‐ray photoelectron spectroscopy (XPS) spectra. XPS experiment also suggests that aqueous grown ZnO nanorods have Zn‐polarity and that might be one of the reasons of lower barrier height. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Effect of Sb template layer on GaSb thin films grown on Si(111) substrate by molecular beam epitaxy
Authors: Toyota H. , Mikami A. , Endoh T. , Jinbo Y. , Uchitomi N. 
Published: November 2010

AbstractGaSb thin films using an Sb template layer on Si(111) substrates were grown by MBE to investigate the effect of the Sb template on the crystalline quality of the GaSb films. Structural properties were compared with those of the GaSb films grown on Si(111) substrates using an AlSb initiation layer and a GaSb film directly grown on Si(111) substrate. For the GaSb thin films prepared using an Sb template layer, streaky RHEED patterns were observed throughout growth of GaSb layer and a typical surface RMS roughness value of 7.4 nm was obtained.The results of θ‐2θ scan XRD investigations indicated that GaSb film on Sb template is nearly unstrained. The φ‐scan XRD measurements with respect to {422} reflection peaks of GaSb films and Si(111) substrates did not show any sound evidence of alignment upon rotation by 30° and rather suggest two domain growth of the GaSb films. The smaller percentage of the domain which is rotated by 60° suggests that the GaSb film grown using an Sb template is more single crystal than the one grown using an AlSb initiation layer. These structural comparisons indicated that the Sb template layer is favorable in obtaining good GaSb epitaxial films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation
Authors: Chattopadhyay Soubhik , Dutta Sreetama , Pandit Palash , Jana D. , Chattopadhyay S. , Sarkar A. , Kumar P. , Kanjilal D. , Mishra D. K. , Ray S. K. 
Published: November 2010

AbstractWe report a systematic study on 1.2 MeV Ar8+ irradiated ZnO by X‐ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet‐visible (UV‐Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to maximum fluence of 5 × 1016 ions/cm2. Even, the width of the XRD peaks changes little with irradiation. The UV‐Vis absorption spectra of the samples, unirradiated and irradiated with lowest fluence (1 × 1015 ions/cm2), are nearly same. However, the PL emission is largely quenched for this irradiated sample. Red shift of the absorption edge has been noticed for higher fluence. It has been found that red shift is due to at least two defect centers. The PL emission is recovered for 5 × 1015 ions/cm2 fluence. The sample colour is changed to orange and then to dark brown with increasing irradiation fluence. Huge resistivity decrease is observed for the sample irradiated with 5 × 1015 ions/cm2 fluence. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Relaxed exciton luminescence of KCl crystals heavily doped with KI
Authors: Ohno Akira , Ohno Nobuhito 
Published: November 2010

AbstractLocalized relaxed exciton luminescence in heavily doped KCl crystals containing iodine impurities has been investigated at 6 K. The excitation spectra of the I– dimer emission at 4.64 eV exhibit that the excitation peak shifts to the lower energy for the lowest excitation band with increase of the concentration of I– ions, which is ascribed to the formation of trimer and clusters of I– ions for heavily doped KCl crystals. Considering the iodine concentration dependence of luminescence and excitation spectra, it is concluded that the luminescence of heavily doped KCl:I originates from the localized relaxed excitons in a complex of three iodine ions (I– trimer) and lager sizes of iodine ions (KI cluster) in addition to usual monomer and dimer I– impurities. The effect of UV‐light irradiation on the relaxed exciton luminescence of heavily doped KCl:I crystal has been also examined. The UV‐light irradiated crystals exhibit an enhancement of the luminescence due to the dimer and the composite clusters. The lowest excitation band of the emission was found to become broad and to shift on the lower energy side. This suggests the formation of KI clusters under the UV‐light irradiation. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Morphology dependent exciton formation in regioregular poly(3‐alkyl)thiophenes
Authors: Kanemoto Katsuichi , Yasui Motoaki , Kosumi Daisuke , Sugisaki Mitsuru , Karasawa Tsutomu , Hashimoto Hideki 
Published: November 2010

AbstractThe photophysics of the regioregular (RR) poly(3‐alkylthiophene) (P3AT) films is investigated by cw‐photoinduced absorption (PIA) measurements based on bleaching signals. The photoexcitation intensity dependence of the cw‐PIA signals demonstrates that both photogenerated localized and delocalized polarons obey a bimolecular recombination process under cw photoexcitation. It is demonstrated that the lineshape of cw‐PIA bleaching spectra for the P3AT films varies with the length of the alkyl substituents of P3AT. The bleaching spectra reveal a trend that the electron‐phonon couplings of final exciton migration sites become strong with increasing the interlamella distance in the P3AT film. This indicates that interlamella couplings affect the electron‐phonon couplings of the migration sites locating at two‐dimensional lamellas. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Laser induced cooling of solids
Authors: Kashyap Raman , Nemova Galina 
Published: November 2010

AbstractLaser induced cooling of solids, also known as optical refrigeration, is different to laser cooling of atoms, and was originally proposed in 1929 by Pringsheim. It was not achieved experimentally until 1995 at the Los Alamos National Laboratory by Epstein's group. Since that time, several proposal for cooling have been made and demonstrated, pushing the achievable coldness towards cryogenic temperatures. In addition, radiation balanced lasers, in which heat is mitigated by laser cooling has also been implemented. This powerful technique enables the scaling of optical powers in lasers, has no moving parts and the electrical connections are entirely remote to the laser. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)