bluuebunny/crossref_metadata_2025_split huggingface dataset:
Classical 18.5‐and 21.5‐kDa isoforms of myelin basic protein inhibit calcium influx into oligodendroglial cells, in contrast to golli isoforms
Authors: Smith Graham S.T. , Paez Pablo M. , Spreuer Vilma , Campagnoni Celia W. , Boggs Joan M. , Campagnoni Anthony T. , Harauz George 
Published: January 2011

AbstractThe myelin basic protein (MBP) family arises from different transcription start sites of the golli (gene of oligodendrocyte lineage) complex, with further variety generated by differential splicing. The “classical” MBP isoforms are peripheral membrane proteins that facilitate compaction of the mature myelin sheath but also have multiple protein interactions. The early developmental golli isoforms have previously been shown to promote process extension and enhance Ca2+ influx into primary and immortalized oligodendrocyte cell lines. Here, we have performed similar studies with the classical 18.5‐ and 21.5‐kDa isoforms of MBP. In contrast to golli proteins, overexpression of classical MBP isoforms significantly reduces Ca2+ influx in the oligodendrocyte cell line N19 as well as in primary cultures of oligodendroglial progenitor cells. Pharmacological experiments demonstrate that this effect is mediated by voltage‐operated Ca2+ channels (VOCCs) and not by ligand‐gated Ca2+ channels or Ca2+ release from intracellular stores. The pseudo‐deiminated 18.5‐kDa and the full‐length 21.5‐kDa isoforms do not reduce Ca2+ influx as much as the unmodified 18.5‐kDa isoform. However, more efficient membrane localization (of overexpressed, pseudo‐deiminated 18.5‐kDa and 21.5‐kDa isoforms of classical MBP containing the 21‐nt 3′‐untranslated region transit signal) further reduces the Ca2+ response after plasma membrane depolarization, suggesting that binding of classical MBP isoforms to the plasma membrane is important for modulation of Ca2+ homeostasis. Furthermore, we have found that the mature 18.5‐kDa isoform expressed in oligodendrocytes colocalizes with VOCCs, particularly at the leading edge of extending membrane processes. In summary, our findings suggest a key role for classical MBP proteins in regulating voltage‐gated Ca2+ channels at the plasma membrane of oligodendroglial cells and thus also in regulation of multiple developmental stages in this cell lineage. © 2011 Wiley‐Liss, Inc.
Expression of COX‐2 and NMDA receptor genes at the cochlea and midbrain in salicylate‐induced tinnitus
Authors: Hwang Juen‐Haur , Chen Jin‐Cherng , Yang Shan‐Ying , Wang Ming‐Fu , Liu Tien‐Chen , Chan Yin‐Ching 
Published: January 2011

AbstractObjective/Hypothesis:The expression of the genes for cyclooxygenase (COX) and NMDA receptor (NR) has seldom been reported in tinnitus. We hypothesized that expression of COX‐2 and NR was altered in the cochlea and midbrain in salicylate‐induced tinnitus.Study Design:Experimental study on mice.Methods:We evaluated the tinnitus score and mRNA expression levels of COX‐2 and NR subtype 2B (NR2B) in the cochlea and midbrain in response to intraperitoneal injections of salicylate for 4 days.Results:At day 4 of tinnitus induction, the mean weights of the whole body and midbrain did not change greatly in both control and salicylate groups. The tinnitus score was not elevated from day 1 to day 4 in the control group, but increased day by day in the salicylate group. The mRNA expression level of COX‐2 decreased slightly in the salicylate group in the cochlea (1.1 ± 0.33 vs. 1.3 ± 0.49, P = .0752) and in the midbrain (0.9 ± 0.10 versus 1.0 ± 0.35, P = .0489). Inversely, the expression levels of the NR2B gene increased moderately in the salicylate group in the cochlea (3.7 ± 0.47 versus 2.3 ± 1.13, P < 0.0001) and in the midbrain (1.6 ± 0.64 versus 1.0 ± 0.44, P = .0007).Conclusions:Salicylate induced tinnitus and altered the expression of the COX‐2 and NR2B genes in the cochlea and midbrain of mice. These findings might contribute to further understanding of pathophysiology and therapy of tinnitus. Laryngoscope, 2011
Endoscopic surgical management of vidian nerve schwannoma
Authors: Hackman Trevor , Rickert Charles G. , Getz Anne E. , Uppaluri Ravindra 
Published: January 2011

AbstractVidian nerve schwannomas are highly unusual, with only two reported cases in the world literature, and present with a constellation of symptoms that may be extremely vague. In the reported cases, open techniques have been utilized that required significant dismantling of the midfacial skeleton to access and manage these skull base lesions. Over the last 15 years, a paradigm shift in base of skull surgery has evolved with the advent of transnasal endoscopic techniques and instrumentation, improved surgical access and resectability of most skull‐based pathologies, including vidian nerve lesions as reported here. We describe the varied clinical presentation and radiologic findings in two patients with such rare lesions. In addition, in one of these patients, we report on the first use of an expanded endonasal technique to access and remove vidian nerve schwannomas entirely endoscopically.
Systematic review of topical vasoconstrictors in endoscopic sinus surgery
Authors: Higgins Thomas S. , Hwang Peter H. , Kingdom Todd T. , Orlandi Richard R. , Stammberger Heinz , Han Joseph K. 
Published: January 2011

AbstractObjective:The objective of this study is to systematically review the literature and examine the safety for the use of topical vasoconstrictors in endoscopic sinus surgery.Study Design:Systematic review clinical trials.Method:A systematic literature search was performed in MEDLINE, EMBASE, The Cochrane Library, and National Guideline Clearinghouse, and references in the selected articles.Results:The search criteria captured 42 manuscripts with relevant titles. A systematic review on the topical use of phenylephrine was found; however, no other systematic review, meta‐analyses, or clinical guidelines were identified. Six randomized clinical trials or comparative studies, as well as multiple case reports and review articles were also identified. The literature supports the safety of oxymetazoline and epinephrine when used judiciously in carefully selected patients undergoing endoscopic sinonasal surgery; however, topical phenylephrine is not recommended because of its risk profile.Conclusion:In sinus or nasal surgery, topical vasoconstrictors should be used in a manner that minimizes the risk of cardiovascular morbidity.
Hyaluronic acid fat graft myringoplasty: A minimally invasive technique
Authors: Saliba Issam , Woods Owen 
Published: January 2011

AbstractObjectives:Hyaluronic acid fat graft myringoplasty (HAFGM) is a new technique for tympanic membrane perforation (TMP) treatment. It is simple, inexpensive, and performed under local anesthesia at the outpatient office department. We aim to evaluate the HAFGM on different TMP sizes, to compare the success rate of HAFGM with the underlay and overlay techniques, and to assess the hearing improvement at one year postoperatively.Study Design:Prospective study.Methods:Patients were divided into three groups depending on the patient's choice of technique: HAFGM (group I), underlay technique (group II), and overlay technique (group III). Perforations were classified into four grades. Postoperatively, the status of the eardrum, the improvement of hearing, and the incidence of complications were the main criteria for measuring outcome.Results:Distribution of TMP was 131, 63, and 52 in group I, II, and III, respectively. Global successful rate and successful closure of the grade I, II, III, and IV were the same for the three groups. Postoperatively, no worsening of bone conduction threshold was noted. Air‐bone gap (ABG) was statistically similar for the three groups. No complications were noted for group I. The mean duration of the operative procedures was 16, 65, and 74 minutes for group I, II, and III, respectively (P= .02). The mean postoperative follow‐up was 18.7, 20.6, and 15.5 months for groups I, II, and III, respectively.Conclusions:HAFGM success rate is comparable to that of the underlay and overlay techniques. Furthermore, it requires no hospitalization and avoids the difficulty of overlay and underlay tympanoplasty.
Two cases of petrosquamosal sinus in the temporal bone presented as perioperative finding
Authors: Yong‐Hwi An  , Wee Jee Hye , Han Kyu‐Hee , Kim Young Ho 
Published: January 2011

AbstractThe petrosquamosal (PSS) is an embryonic emissary vein of the temporal bone in humans and connects the intra‐ and extracranial venous networks. Few reports in the recent literature provide detailed descriptions of PSSs that are found before or during surgeries. We report the presence of PSS in two patients with chronic otitis media. An abnormal vessel was found originating from the sigmoid sinus of each patient. The vessels coursed anteroinferiorly over the superior portion of the temporal bone and terminated near the posterior part of the temporomandibular joint. The clinical significance of PSS and a brief literature review are presented.
Study of oxygen clustering in Czochralski silicon at 450 °C–800 °C: correlation with thermal donors formation
Authors: Moumni B. , Ben Jaballah A. , Aouida S. , Bessaïs B. 
Published: January 2011

AbstractThe understanding of the generation‐annihilation phenomena of oxygen‐related thermal donors (TDs) in p‐type Czochralski silicon is of great importance for device fabrication and operation in microelectronic and photovoltaic industry. In this work, we report on oxygen clustering‐based activation and partial annihilation of TDs in Cz‐Si submitted to thermal annealing under nitrogen at 450 °C‐800 °C for different thermal plateau exceeding 4 hours. The effect of thermal annealing on interstitial oxygen and dimer (Oi and O2i) vibration modes appearing in the 580 cm‐1‐500 cm‐1 spectral range is studied. We found that heat treatment at 450°C and 650 °C give rise to new thermal donors (NDs) that are located at 540 cm‐1 and 532 cm‐1, respectively. Subsequent to heat treatment above 650 °C, we depict the formation of new thermal oxygen defects having an IR signature in the 1800 cm‐1‐1500 cm‐1 spectral range, and which are especially sensitive to the thermal treatment duration. Resistivity measurements confirm that several of them are electrically active. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Spatially resolved lifetime measurements of silicon heterojunctions from the modulated photoluminescence technique
Authors: Favre W. , Kleider J.‐P. , Muñoz D. , Martin‐de‐Nicolás S. , Ribeyron P.‐J. 
Published: January 2011

AbstractLifetime measurements are widely used both in research and industry as material and passivation quality characterization tools for silicon solar cells. Some of them combine spatial resolution together with mapping ability, which provides attractive and valuable images that lead for instance to a quick determination of poor regions of a sample. Here, we focus on microwave photoconductance decay (µ‐PCD) and band‐to‐band photoluminescence (PL) measurements performed either in static or in modulated mode. Results are obtained on n‐type crystalline silicon wafers passivated with intrinsic and doped hydrogenated amorphous silicon thin layers deposited on both faces by PECVD. In a first step we compare the static PL signal mapping and the µ‐PCD lifetime mapping. In a second step, the static PL signal is correlated to the effective carrier lifetime deduced from modulated PL measurements. This allows us to transform the static PL signal into an effective carrier lifetime, and thus to provide a PL carrier lifetime mapping that can be directly compared to that obtained from µ‐PCD. The lifetime mappings obtained in this way from both techniques are discussed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high‐energy helium irradiation
Authors: Komarnitskyy Volodymyr , Hazdra Pavel , Buršíková Vilma 
Published: January 2011

AbstractInteraction of hydrogen and deuterium with radiation defects introduced by irradiation with high‐energy alphas was investigated in the low–doped float zone and Czochralski silicon forming the base of p+nn+ diodes. To create localized defect layer, diodes were first irradiated with 2.4 MeV alphas to a fluence of 1x1010 cm‐2. Then, hydrogen or deuterium was introduced by rf plasma treatment at 250 °C and diodes were isochronally annealed at temperatures ranging from 100 to 400 ºC. Reactions of hydrogen and deuterium with radiation defects were monitored by deep‐level transient spectroscopy.Results show that hydrogen rf plasma effectively neutralizes majority of vacancy related defects created by alpha‐particle irradiation in both materials. In contrast with it, neutralization by deuterium plasma is substantially weaker. Disappearing of vacancy‐related defect levels due to hydrogen (deuterium) is accompanied by introduction of two dominant deep levels at EC–0.309 eV and EC–0.365 eV. While hydrogenation significantly accelerates annealing of radiation defects, deuteration has weaker effect and gives rise to new defect levels during annealing (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
First‐principles calculation on screw defects at Si(110)/(100) interface
Authors: Kariyazaki Hiroaki , Aoki Tatsuhiko , Izunome Koji , Sueoka Koji 
Published: January 2011

AbstractDirect silicon bonded (DSB) substrates with (110)/(100) hybrid orientation are promising for high‐performance bulk complementary metal‐oxide semiconductor technology. We have studied the interfacial structure of the Si (110)/(100) paralleling each 〈110〉 direction, including screw defects, by first‐principles calculation. The screw defects were characterized by analysing the atomic configuration and the chemical bonding. Furthermore, the periodicity of the screw defects is discussed in comparison the experimental results (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
GaN MOSFET with a gate SiO2 insulator deposited by silane‐based plasma‐enhanced chemical vapor deposition
Authors: Ao Jin‐Ping , Nakatani Katsutoshi , Sogawa Yuji , Akamatsu Shiro , Kim Young Hyun , Miyashita Takahiro , Motoyama Shin‐ichi , Ohno Yasuo 
Published: January 2011

AbstractGaN metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) with a silane‐based SiO2 insulator deposited by plasma‐enhanced chemical vapor deposition (PECVD) were demonstrated using an AlGaN/GaN heterostructure field‐effect transistor (HFET) structure as the source and drain regions. Operation up to a gate voltage of 15 V was realized at an ignorable gate leakage current. To investigate the effects of annealing on the device performance, the samples were thermally treated at 850 or 1000 °C for 10 minutes in oxygen or nitrogen ambient. We found that the electron mobility and the interface state density were improved by a thermal treatment at 1000 °C in nitrogen ambient. A maximum field‐effect mobility of approximately 137 cm2 V‐1 s‐1 at an interface state density of 2.21×1011 cm‐2 eV‐1 was obtained. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Fabrication of ZnO/Zn1‐xMgxO heterostructure thin films by sol‐gel spin‐coating method
Authors: Noriyuki Hasuike , Toru Kiyohara , Tomoe Harada , Kenji Kisoda , Hiroshi Harima 
Published: January 2011

AbstractZnO/Zn0.85Mg0.15O heterostructure thin films were prepared by sol‐gel spin‐coating method on sapphire (0001) substrate with different thickness of ZnO layer. X‐ray diffraction patterns showed that all the samples were preferentially oriented in [0001] direction with no phase separation. Optical transmission spectra showed the clear band‐edge absorption of ZnO and Zn0.85Mg0.15O layer, and the thickness of each layer was roughly estimated. Also, two UV emission peaks originated from each layer at 3.2 eV and 3.55 eV were observed in photoluminescence measurement. And, the emission peak at 3.2 eV of ZnO layer shifted to higher energy side with decrease in the thickness of ZnO layer. This result indicates that Mg ions slightly diffused to the ZnO layer in several nanometers of ZnO/Zn0.85Mg0.15O interface by thermal treatment in growth process (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Graphene segregation on Ni/SiO2/Si substrates by alcohol CVD method
Authors: Miyasaka Yuta , Matsuyama Akihiro , Nakamura Atsushi , Temmyo Jiro 
Published: January 2011

AbstractWe performed graphene synthesis on Ni films using ethanol gas in this report. A size of a segregated graphene is responsible for a size of underlying Ni catalyst according to evaluations of Raman spectroscopy, FE‐SEM and AFM. A distribution of graphene layer number is also observed because of a surface roughness of Ni. A domain size of segregated graphene networks depends on the size of underlying Ni grains. Comparing plots of W2D as a function of IG/I2D between a segregated graphene on a Ni film and exfoliated graphene on SiO2/Si substrates by pealing method, shows similar tendency. Thus, layer number of segregated graphene on Ni film can be speculated without transferring into other substrates. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Effect of Cr3+ ions on optical properties in β‐Ga2O3 semiconductor
Authors: Wakai Hirofumi , Sinya Yuuta , Yamanaka Akio 
Published: January 2011

AbstractCr‐doping effects on optical properties of β‐Ga2O3 have been studied in single‐crystalline samples, grown by floating‐zone method. The photoluminescence, which is observed as an intense and broad peak in nominally pure β‐Ga2O3, is found be abruptly suppressed by Cr‐doping. This suppression demonstrates that a small amount of Cr3+ ions acts as non‐radiative centers for photo‐excited carriers. In Cr‐doped β‐Ga2O3 the residual photoluminescence shows UV and green emissions, peaking at about 3.3 eV and 2.4 eV, respectively. The photoluminescence excitation spectrum of the UV peak has a polarization‐dependent maximum at the fundamental absorption edge that is arising from the band‐to‐band excitations. Therefore, the radiative decay channels for photo‐excited carriers partly survive in Cr‐doped β‐Ga2O3. We have also found a Cr‐induced absorption band located just below the fundamental absorption edge (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Fabrication of PEDOT:PSS/ZnMgO Schottky‐type ultraviolet sensors on glass substrates with solution‐based mist deposition technique and hard‐mask patterning
Authors: Ikenoue Takumi , Kameyama Naoki , Fujita Shizuo 
Published: January 2011

AbstractA transparent conducting polymer, poly(3,4‐ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) thin films were fabricated by a novel ultrasonic spray‐assisted mist deposition technique. The films of ZnMgO and high conductive ZnO:Ga were also formed by the same technique, with which high performance PEDOT:PSS/ZnMgO Schottky ultraviolet sensors were fabricated on glass substrates. Hard‐mask patterning was employed, without photolithography. As an example, a sensor operating in the UV‐B region exhibited the quantum efficiency of 0.37 at 250 nm and the ultraviolet/visible rejection ratio of about 103 under zero‐bias condition. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Effects of Mg doping on optical and electrical properties of GaNAs multiple quantum wells
Authors: Shiraga Masahiro , Nakai Yuko , Hirashima Tomohiko , Kittaka Akinobu , Ebisu Mari , Takahashi Naoshi , Noda Takeshi , Ohmori Masato , Akiyama Hidefumi , Tsurumachi Noriaki , Nakanishi Shunsuke , Miyagawa Hayato , Itoh Hiroshi , Koshiba Shyun 
Published: January 2011

AbstractWe have evaluated the effects of Mg doping on the optical and the electrical property of GaNAs/GaAs multiple quantum wells (MQWs) with high N composition (11∼17%) grown by radio‐frequency molecular beam epitaxy (RF‐MBE). The results of Van der Pauw measurements revealed strong n‐type conduction by Mg doping. The blue‐shifts and enhanced intensities in photoluminescence by Mg doping suggest the type‐II band structure of GaNAs/GaAs MQWs and carrier generation by interstitial Mg atoms (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Structure, properties, and nature of the BrF‐HX complexes: An Ab initio study
Authors: Wu Junyong 
Published: January 2011

AbstractStructure and properties of complexes (energies and charge transfer) of complexes BrF‐HX (X = F, Cl, Br, I) have been investigated at the MP2/aug‐cc‐pVDZ (aug‐cc‐pVDZ‐pp basis sets for I) level. Two types of geometries (hydrogen‐bonded and halogen‐bonded) are observed. The calculated interaction energies show that the halogen bonded structures are more stable than the corresponding hydrogen‐bonded structures. To study the nature of the intermolecular interactions, symmetry‐adapted perturbation theory (SAPT) energy decomposition analysis reveals that the BrF‐HX complexes are dominantly electrostatic in nature. © 2011 Wiley Periodicals, Inc. Int J Quantum Chem, 2011
Ab initio studies of the conformers and conformational distribution of gas‐phase N,N‐dimethylaminopropanol
Authors: Wang Kedong , Zhang Jicai , Xu Guoliang 
Published: January 2011

AbstractSystematic and extensive conformational search has been performed to characterize the gas‐phase N,N‐dimethylaminopropanol structures. A total of 91 unique trail structures were generated by allowing for all the single‐bond rotamers. All the trial structures were initially optimized at the AM1 level, and the resulting structures were optimized at the B3LYP/6‐311G* level of theory and then subjected to further optimization at the B3LYP/6‐311++G**. A total of 36 conformers are found and their zero‐point vibrational enegies, rotational constants, and dipole moments are determined. Vertical ionization energies of 11 low‐lying conformers predicted with the electron propagator theory are in good agreement with the experimental data. The two most stable conformers display intramolecular H bonds (HBs): OH···N. These HBs influence on the molecular electronic structures is exhibited by natural bond orbital analyses. Combined with statistical mechanics principles, conformational distributions at various temperatures are computed and the temperature dependence of photoelectron spectra is interpreted. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2010
Structural analysis of sterically hindered 1,4‐diols from the naturally occurring lignan hydroxymatairesinol a quantum chemical study
Authors: Sandberg Thomas , Brusentsev Yury , Eklund Patrik , Hotokka Matti 
Published: January 2011

AbstractThe structures of TADDOL‐like α‐conidendrin‐based chiral 1,4‐diols (LIGNOLs) have been studied at molecular mechanics, Hartree‐Fock (HF)/6‐31G* and DFT/B3LYP/TZVP level of theory. The molecules included were 1,1‐diphenyl, two diastereomers of 1,1,4‐triphenyl, 1,1,4,4‐tetraphenyl, and 1,1,4,4‐tetramethyl 1,4‐diol. Several conformers of each molecule were studied thorougly also including the entropy contributions. For the triphenyl 1,4‐diols, which can form π − π interactions between phenyl rings, the DFT optimized structures differed significantly from the HF optimized ones. A property for the most stable structures, in addition to the ability to form π − π interactions, seemed to be the possibility to have the aliphatic six‐membered ring in a boat conformation. For all of the studied LIGNOLs some conformers were found, where the two OH groups pointed almost to the same direction. By this an intramolecular hydrogen bond can be formed between them. The bridging hydrogen atom falls at the same place as a chelate‐bonded metal ion would be situated, as in the case of the analogous molecules, TADDOLs, but only a few of these molecules would be able to work well as ligands for asymmetric catalysis. © 2011 Wiley Periodicals, Inc. Int J Quantum Chem, 2011