bluuebunny/crossref_metadata_2025_split huggingface dataset:
Overexpression of miR‐210, a downstream target of HIF1α, causes centrosome amplification in renal carcinoma cells
Authors: Nakada Chisato , Tsukamoto Yoshiyuki , Matsuura Keiko , Nguyen Tung Lam , Hijiya Naoki , Uchida Tomohisa , Sato Fuminori , Mimata Hiromitsu , Seto Masao , Moriyama Masatsugu 
Published: January 2011

AbstractMiR‐210 is significantly up‐regulated in clear cell renal cell carcinoma (CCC), but the mechanism and biological consequences of miR‐210 up‐regulation are poorly understood. Here, we show that miR‐210 is highly expressed in renal carcinoma cell lines and that its expression is clearly correlated with accumulation of hypoxia‐inducible factor 1α (HIF1α) under normoxia as well as hypoxia, suggesting that miR‐210 up‐regulation in renal carcinoma cells is most likely due to accumulation of HIF1α. To reveal the effects of miR‐210 up‐regulation, the miR‐210 precursor was transfected into renal carcinoma cells. After transfection, the cells accumulated at the G2/M phase of the cell cycle and their viability was decreased, suggesting that miR‐210 overexpression may trigger an event that hinders normal cell division. Immunocytochemistry demonstrated a multipolar spindle accompanied by centrosome amplification in cells overexpressing miR‐210. It has been reported that centrosome amplification induces chromosome mis‐segregation, finally leading to chromosome instability and aneuploidy. Indeed, the proportion of aneuploid cells (>4n) was increased in miR‐210 overexpressed cells. By using the TargetScan and PicTar algorithms, E2F3 was identified as one of the possible targets of miR‐210 and was suppressed at the protein level by miR‐210. Moreover, the proportion of aneuploid cells was increased in E2F3 siRNA transfected cells. On the basis of these results, we propose that miR‐210 up‐regulation due to HIF1α accumulation may induce aneuploidy via E2F3 down‐regulation at least in part, and may play a role in tumourigenesis and/or progression of CCC. Copyright © 2011 Pathological Society of Great Britain and Ireland. Published by John Wiley & Sons, Ltd.
Recent results for single‐junction and tandem quantum well solar cells
Authors: Adams J. G. J. , Browne B. C. , Ballard I. M. , Connolly J. P. , Chan N. L. A. , Ioannides A. , Elder W. , Stavrinou P. N. , Barnham K. W. J. , Ekins‐Daukes N. J. 
Published: January 2011

AbstractThe band gap of the quantum well (QW) solar cell can be adapted to the incident spectral conditions by tailoring the QW depth. The single‐junction strain‐balanced quantum well solar cell (SB‐QWSC) has achieved an efficiency of 28.3%. The dominant loss mechanism at the high concentrator cell operating bias is due to radiative recombination, so a major route to further efficiency improvement requires a restriction of the optical losses. It has been found that (100) biaxial compressive strain suppresses a mode of radiative recombination in the plane of the QWs. As biaxial strain can only be engineered into a solar cell on the nanoscale, SB‐QWSCs are seen to have a fundamental efficiency advantage over equivalent bulk cells. Strain‐balanced quantum wells in multi‐junction solar cells can current match the sub‐cells without the introduction of dislocations. Calculations are shown which predict efficiency limits as a function of QW absorption and band gap for such cells. A dual‐junction InGaP/GaAs solar cell with QWs in the bottom sub‐cell has been grown and characterized. Laboratory and calculated efficiencies relative to control cells are presented for the reported cell and a modeled device, respectively. Copyright © 2011 John Wiley & Sons, Ltd.
Effects of spectrum on the power rating of amorphous silicon photovoltaic devices
Authors: Monokroussos C. , Bliss M. , Qiu Y.N. , Hibberd C.J. , Betts T.R. , Tiwari A.N. , Gottschalg R. 
Published: January 2011

AbstractThe effects of different spectra on the laboratory based performance evaluation of amorphous silicon solar cells is investigated using an opto‐electrical model which was developed specifically for this purpose. The aim is to quantify uncertainties in the calibration process. Two main uncertainties arise from the differences in the test spectrum and the standard spectrum. First, the mismatch between reference cells and the measured device, which is shown to be voltage dependent in the case of amorphous silicon devices. Second, the fill factor of the device is affected by different spectra. Different cell structures and states (specifically different i‐layer thickness and levels of degradation) for the different light sources are investigated in this work. These sources are different solar simulators, LED sources, Tungsten as well as the standard terrestrial AM1.5G radiation. It is shown that the performance cannot be evaluated by short circuit current alone. The voltage dependent quantum efficiency of p‐i‐n devices can introduce a mismatch in the PMPP of 1% for 250 nm i‐layer devices in as prepared state, rising to up to 4% for the 600 nm i‐layer devices at degraded state. Copyright © 2011 John Wiley & Sons, Ltd.
Introduction to the special issue: Cognitive‐behavioral therapy in the school setting—Expanding the school psychologist's toolkit
Authors: Allen Korrie 
Published: January 2011

AbstractThe majority of students with mental health problems receive services in the school setting rather than the community setting. The field of school psychology has advocated for the use of evidenced‐based interventions to address mental health problems. The purpose of this special issue is to refine the school psychologist's role through the use of cognitive‐behavioral interventions. This issue includes articles that address specific disorders (e.g., conduct problems, anxiety) providing research evidence for cognitive‐behavioral interventions and discussing solutions to implementation issues that arise in the school setting. In addition, the issue includes articles that (a) discuss implementation models for cognitive‐behavioral interventions in the school, (b) provide a case study, and (c) review methods to enhance parent consultation. In this article, the issue is introduced by reviewing the impact of mental health problems on the school system, the role of the school psychologist, and the implementation of cognitive‐behavioral interventions. © 2011 Wiley Periodicals, Inc.
School‐based treatment of attention‐deficit/hyperactivity disorder
Authors: Schultz Brandon K. , Storer Jennifer , Watabe Yuko , Sadler Joanna , Evans Steven W. 
Published: January 2011

AbstractThe authors review the research literature regarding school‐based treatment of attention‐deficit/hyperactivity disorder (ADHD). Students with ADHD often do not receive access to special services, even though the impairments associated with the disorder often compromise learning and cause concerns for classroom teachers, school administrators, and support staff. Several school‐based psychosocial interventions that have shown promise in the research literature are described. The authors conclude by offering their perspective on the opportunities and challenges inherent in school‐based services for students with ADHD, with a focus on cognitive and behavioral interventions. © 2011 Wiley Periodicals, Inc.
Mechanism behind the stress‐induced change in boron and arsenic diffusion in silicon devices and its experimental verification
Authors: Lau W. S. , See K. S. , Yang P. 
Published: January 2011

AbstractThere are contradictory reports regarding the effects of uniaxial compressive stress on boron diffusion in silicon. Some reported on the stress‐induced retardation of boron diffusion, whereas some reported on the stress‐induced enhancement of boron diffusion. This work serves to reconcile the conflicting reports on the effects of shallow trench isolation‐induced compressive stress on boron diffusion in silicon. We propose that there are two opposing mechanisms that affect the strain‐induced change in boron diffusion. Mechanism 1, which is related to the strain‐induced reduction in the silicon lattice constant, will lead to a retardation of the boron diffusion of the S/D extension implants. Mechanism 2, which is related to the formation of transient dislocations in silicon during the ramping up period of the S/D annealing, will lead to an enhancement of boron diffusion of the S/D extension implants. The interactions between the two opposing mechanisms would affect the on current versus S/D overhang characteristics as well as the off current versus S/D overhang characteristics. Similar theory can be extended to arsenic diffusion.
The free positron lifetime in amorphous polymers at low temperature
Authors: Laforest N. , Bas C. , De Baerdemaeker J. , Djourelov N. , Dauwe C. 
Published: January 2011

AbstractA series of amorphous polymers was studied by positron annihilation lifetime (PALS) spectroscopy at 20 K each experiment lasted more than 1 week. The lifetime spectra were deconvoluted into three exponential components. In isothermal conditions, an increase of the free positron lifetime is observed while the parapositronium (pPs) and orthopositronium (oPs) lifetimes do not change with the measuring time.This upward trend was correlated to the oPs intensity change. To explain the time dependence of the free positron lifetime, a model based on heterogeneities in the electronic density and accumulation of shallowly trapped electrons (STEs) caused by the 22Na source irradiation is proposed. The fittings give two parameters the intrinsic free positron lifetime $\tau _{2}^{0} $ and the Onsager radius $R_{0}^{{\rm PALS}} $.
Selection of silicon wafer for power devices and the influence of crystal defects including impurities
Authors: Yamamoto Hidekazu , Hashizume Tamotsu 
Published: January 2011

AbstractSilicon wafers used as starting materials are significantly different in MOS‐LSIs and power devices, because each device requires a specific structure. For power devices, FZ wafers or epitaxial wafers with a thick epitaxial layer are widely used. Epitaxial wafers are advantageous with respect to low breakdown voltage devices, and FZ wafers are advantageous for high breakdown voltage devices. The influence of COPs formed during CZ crystal growth on highly miniaturized MOS‐LSIs is significant; however, COPs do not pose a problem to power devices prepared from FZ or epitaxial wafers. BMDs and slip dislocations have caused device failures on power devices where the device operation layer is deep and the process temperature is high. On the other hand, misfit dislocations which are generated with high concentration do not introduce device failures. Failure due to physical contamination is observed when Fe has introduced a failure to the power device. Cu/pit failures occur due to chemical contamination by Cu only for more highly miniaturized MOS‐LSIs, but are not a problem for power devices whose miniaturization level is not required as that for MOS‐LSIs. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Microstructural tuning of polycrystalline silicon films from hydrogen diluted amorphous silicon films by AIC
Authors: Prathap P. , Tuzun O. , Roques S. , Schmitt S. , Maurice C. , Slaoui A. 
Published: January 2011

AbstractIn the present study, the effect of hydrogen dilution in amorphous silicon on its crystallization kinetics and defect distribution using AIC has been studied. The a ‐Si films were deposited at different ratios of H2/(H2+SiH4) using plasma enhanced chemical vapour deposition (ECR‐PECVD) on glass‐ceramic substrates. The thicknesses of aluminium and a ‐Si:H films were 0.20 μm and 0. 37 μm, respectively. The bi‐layer structures were annealed in a tube furnace at 475 °C for 8 hours in a nitrogen atmosphere. The results indicated that as the hydrogen dilution for a ‐Si:H films increased from 0% to 85%, the AIC grown poly‐Si films were more stressed compressively, while the Raman peak broadened from 6.7 cm‐1 to 8.6 cm‐1. It was found that the initiation of crystallization temperature as well as microstructure of poly‐Si films was dramatically influenced by the hydrogen content in precursor a ‐Si films. The distribution of microstructural defects analysed by Electron Back Scattering Diffraction (EBSD) method indicated that frequency of low angle grain boundaries (LAGB) were more at higher hydrogen dilution ratios while coincident site lattice boundaries (CSL) of first order (Σ3), second order (Σ9) and third order (Σ27) were less sensitive to the hydrogen dilutions/content (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Decoration and preferential etching of crystal defects in silicon materials: influence of metal decoration on the defect etching process
Authors: Idrisi H. , Sinke T. , Gerhardt V. , Ceglarek D. , Kolbesen B. O. 
Published: January 2011

AbstractDelineation of crystal defects in SOI wafers can be accomplished by preferential etching with solutions such as dilute Secco etch. By application of decoration procedures with metals such as copper or lithium delineation of defects by preferential etching can be improved due to acceleration of the etching process at the metal decorated defects. Parameters such as removal rate, selectivity and activation energy for the etching process are used to describe the influence of metal decoration on preferential etching of defects in SOI wafers. In this work the selectivity of a dilute Secco etch was determined experimentally on dislocations generated by damaging silicon substrates by indentation with a diamond tip and subsequent annealing at 1000 °C. After dilute Secco etching the depth of the dislocation etch pits was measured by an atomic force microscope. Both the selectivity and the activation energy were compared for non‐decorated and copper or lithium decorated samples of SOI wafers or silicon substrates. Typical values obtained for activation energies of non‐decorated samples were 29‐33 kJ/mol, those of decorated samples were in the range of 25‐34 kJ/mol. For the selectivity the values for non‐decorated samples were about 1.95 and increased with the level of copper decoration up to 3.0. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Negative ion yield and sputter yield variations for Cs+ bombardment of Si with O2 gas flooding
Authors: Franzreb Klaus , Williams Peter 
Published: January 2011

AbstractWe have investigated whether negative secondary ion yields from Cs+ sputtered silicon might be improved by simultaneous O2 gas flooding, which lowers the sputter yield of the silicon, and thus, might increase the cesium content at the surface. The composition at the sputtered surface is derived from quantitative measurements of the ratios of O/Si and Cs/Si in the total emitted flux using the recently developed oxygen 18 method1 and sputter yield measurements, respectively (with XSi + XCs + XO = 1). The silicon sputter yield, Y, is lowered by adsorbed oxygen by as much as a factor of 2.7 and is found to scale almost linearly with the silicon atom fraction XSi at the surface, resulting in the cesium atom fraction XCs at the surface remaining nearly constant during oxygen flooding. We find that oxidation of the cesiated silicon surface influences differently the useful ion yields (ions detected/atom sputtered) of various elements. The yields of B− and Cs− are enhanced by factors of 3 and 34, respectively, the yield of O− remains roughly constant, and yields of other elements (As−, Cl−, P−, Sb−, Si−) are lowered by a factor of 2 or 3. Copyright © 2010 John Wiley & Sons, Ltd.
The development of SIMS and international SIMS conferences: a personal retrospective view
Authors: Benninghoven A. 
Published: January 2011

AbstractToday SIMS is a well‐established and widely applied surface analytical technique, featuring the many unique properties of mass spectrometry. It is successfully applied to virtually all kinds of solid materials, for bulk and thin layer as well as for surface analysis. The fast development of SIMS started in the late 1950s and continues until today. It has been characterized by a number of key developments, which include the control of ion yields by the application of selected atomic and molecular or cluster ions, the development of high‐performance instrumentation by the development of special operation modes, and several attempts to understand and predict the secondary ion formation processes. Starting in 1977, these developments have been accompanied by and mirrored in the series of international SIMS conferences. The development of the technique as well as the conference series and their strong interaction is described in a pronounced personal retrospective view. Copyright © 2011 John Wiley & Sons, Ltd.
Bodies Real and Virtual: Joseph Rock and Enrico Caruso in the Sino-Tibetan Borderlands
Authors: Mueggler Erik 
Published: January 2011

In 1934, during twenty-eight years of wandering west China, the American botanist Joseph Francis Charles Rock made a brief trip to England. He clipped the obituary of an old friend from the Times and pasted it in his diary. On the facing page, he pasted a photograph two decades old, and wrote this caption:J. F. Rock (standing) with his older friend Fred Muir, Entomologist at the Haw[aii] Sugar Planter's Exp[eriment] Sta[tion], Honolulu. Photographed in our home in Liloa Rise (Breaside), Honolulu in the spring of 1913, while our phonograph played Spiritu Gentile, Caruso singing.
Family obligations and support behaviour: a United States–Netherlands comparison
Authors: COONEY TERESA M. , DYKSTRA PEARL A. 
Published: January 2011

ABSTRACTThis study draws on national survey data from the United States of America (USA) and the Netherlands to compare family obligations and support behaviour for middle-generation adults who have a living aged parent and adult child. Consistent with afamilialism by default hypothesisbased on welfare state differences, the US sample espouses stronger family obligations than the Dutch sample. Yet, the Dutch respondents are more likely to engage in family support behaviours with both the younger and older generations, contrary to afamily-steps-in hypothesis. The connection between family obligations and support behaviour is also tested, revealing a stronger association in the US sample, consistent with afamily-steps-in hypothesis, but only in regard to relations with ageing parents. We conclude that Dutch respondents are more likely to act on their individual preferences whereas American respondents are more influenced by general norms of obligation towards family members. The findings are discussed in terms of social policy differences between the two countries, and in light of results from comparative European studies of intergenerational relations.
Towards a Critical Theory of Democratic Peace
Authors: HOBSON CHRISTOPHER 
Published: January 2011

AbstractThe Democratic Peace research programme remains a prominent and influential strand of International Relations theory. It occupies a central place in the discipline, both as a dominant version of liberal internationalism, and as a supposedly paradigmatic case demonstrating the strengths of positivist scholarship. Nonetheless, Democratic Peace scholarship has been challenged by recent real world events, notably the belligerent behaviour of democratic states during the so-called ‘War on Terror’, and the use of its findings to justify the US led invasion of Iraq. In this regard, Democratic Peace research has struggled to deal with the ethical and practical consequences of its work, as the focus has been on empirically observable and testable problems that fit within the remit of positivist social scientific practice. Responding to this state of affairs, it is argued here that there is a pressing need to further extend and pluralise existing scholarship by incorporating approaches which commence from different ontological, epistemological and methodological starting points. While there are multiple possibilities, Frankfurt School Critical Theory has great potential to contribute to an expanded research agenda. The article outlines what a Critical Theory approach to the study of Democratic Peace would entail, highlighting the substantial contribution it can make.
Microbiological and epidemiological investigation of the Neisseria meningitidis serogroup A epidemic in Niger in 2009: last wave before the introduction of the serogroup A meningococcal conjugate vaccine?
Authors: COLLARD J. M. , MAMAN Z. , ABANI A. , MAINASARA H. B. , DJIBO S. , YACOUBA H. , MAITOURNAM R. , SIDIKOU F. , NICOLAS P. , ROCOURT J. , JUSOT J. F. 
Published: January 2011

SUMMARYThe 2009 meningitis season in Niger was characterized by an early onset, beginning in the very first weeks of the year and peaking from the 12th to the 15th week with 5655 clinical cases over the 4 weeks. From 1 January 2009 to 28 June 2009 (week 26), a total of 13 733 clinical cases of meningitis were reported to the national epidemiological surveillance system with a case-fatality rate of 4·2%. During the season 25 of the 42 health districts reached the epidemic threshold and 11 the alert threshold. Reactive mass vaccination campaigns involving a total of 5 166 741 doses of the polysaccharide meningococcal bivalent (A+C) vaccine progressively controlled the outbreak in most parts of the country. A total of 3755 cerebrospinal fluid samples representing 28·1% of the suspected meningitis cases were analysed. Serogroup A meningococci were the causative agent in 97·5% of the meningococcal cases. Multi-locus sequence typing of 26 meningococal serogroup A strains showed 25 sequence type (ST)7 and one ST2859, both sequence types belonging to the ST5 clonal complex (CC5) of subgroup III. This is the largest epidemic observed in Niger since those of 1995–1996 (59 948 notified cases) and 2000 (14 633 notified cases).
Increased influenza-related healthcare utilization by residents of an urban aboriginal community
Authors: CHARLAND K. M. , BROWNSTEIN J. S. , VERMA A. , BREWER T. , JONES S. , HOEN A. GATEWOOD , BUCKERIDGE D. L. 
Published: January 2011

SUMMARYMost studies describing high rates of acute respiratory illness in aboriginals have focused on rural or remote communities. Hypothesized causes include socioeconomic deprivation, limited access to healthcare, and a high prevalence of chronic disease. To assess influenza rates in an aboriginal community while accounting for healthcare access, deprivation and chronic disease prevalence, we compared rates of influenza-related outpatient and emergency-department visits in an urban Mohawk reserve (Kahnawá:ke) to rates in neighbouring regions with comparable living conditions and then restricted the analysis to a sub-population with a low chronic disease prevalence, i.e. those aged <20 years. Using medical billing claims from 1996 to 2006 we estimated age-sex standardized rate ratios. The rate in Kahnawá:ke was 58% greater than neighbouring regions and 98% greater in the analysis of those aged <20 years. Despite relatively favourable socioeconomic conditions and healthcare access, rates of influenza-related visits in Kahnawá:ke were elevated, particularly in the younger age groups.
Measuring antibody levels in bulk-tank milk as an epidemiological tool to search for the status ofCoxiella burnetiiin dairy sheep
Authors: RUIZ-FONS F. , ASTOBIZA I. , BARANDIKA J. F. , JUSTE R. A. , HURTADO A. , GARCÍA-PÉREZ A. L. 
Published: January 2011

SUMMARYPooling samples may provide a valuable alternative to individual testing for pathogen surveillance purposes. We studied the reliability of measuring the level of antibodies againstCoxiella burnetiiin bulk-tank milk (BTM) to estimate the seroprevalence ofC. burnetiiin dairy sheep in 34 flocks. We then estimated the seroprevalence ofC. burnetiiin 154 dairy sheep flocks according to the level of antibodies in BTM. We tested for the accuracy of our estimation at the population level by comparing predicted meanC. burnetiiflock seroprevalence with that obtained in another survey performed on the same population. Our findings showed that testing BTM by ELISA is a cost-effective and relatively good index of the seroprevalence ofC. burnetiiin dairy sheep and may be a useful tool for epidemiological surveillance at the population level.