bluuebunny/crossref_metadata_2025_split huggingface dataset:
Slurry Particle Agglomeration Model for Chemical Mechanical Planarization (CMP)
Authors: Johnson Joy Marie , Boning Duane 
Published: August 2010

AbstractIn this work we propose a particle agglomeration model for chemical mechanical planarization (CMP) under the primary motivation of understanding the creation and behavior of the agglomerated slurry abrasive particles during the CMP process, which are a major cause of defectivity and poor consumable utility due to sedimentation.The proposed model considers the slurry composition as a colloidal suspension of charged colloidal silica in an electrically neutral aqueous electrolyte. First, a theoretical relationship between the measurable chemical parameters of the slurry's aqueous electrolyte, the surface potential of the abrasive particles, and corresponding zeta potential between the agglomerated abrasive particles is presented. Secondly, this zeta potential is used in a modified DVLO interaction potential model to determine the particle interaction potentials due to both the attractive van Der Waals forces and repulsive electrostatic interactions. Finally, the total interaction potential created is then used to define a stability ratio for slow versus fast agglomeration and corresponding agglomeration rate equations between particles; these are used in a discrete population balance framework to describe the final particle size distribution with respect to time and agglomerate composition.The proposed model will provide both a qualitative and quantitative description of agglomeration of abrasive slurry particles during CMP that can be extended to account for slurry composition or abrasive particle type, enabling more accurate process control, increased consumable utility, and possible defectivity reduction.
High Quality NH2SAM (Self Assembled Monolayer) Diffusion Barrier for Advanced Copper Interconnects
Authors: Maestre Caro Arantxa , Zhao L. , Maes Guido , Borghs Gustaaf , Beyer Gerald , Tőkei Zsolt , Armini Silvia , Travaly Youssef 
Published: August 2010

AbstractThe trend for future integrated circuits (IC) is decreasing in size beyond the conventional limits. The recent transition from aluminum to copper as the interconnect material for IC is due to copper's higher resistance to electromigration and its lower resistivity. Unfortunately, copper has high mobility in Si and SiO2 and may cause destruction of electrical connections on the chip. Hence, there is a significant necessity in finding ultra thin, thermally stable, high quality and good adhered diffusion barriers. The most widely used barrier is pure Ta films or layer stacks consisting of Ta and TaN. These have excellent conformality, very good uniformity and high thermal stability. But The continuous scaling down of the interconnect dimensions lead to an essential decrease in the barrier layer effective thickness to less than 5nm; coupled with the replacement of silicon oxide by advanced low-k dielectrics it demand further improvements of the diffusion barrier performance. For that reason Self-assembled monolayers (SAMs), with thicknesses of 2nm or less, have been propose for copper diffusion barrier application. By tailoring the structure of these monomolecular organic films, atomic scale properties can be controlled and selective surfaces and interfaces can be engine as desired for a specific application. In the presented work, the quality of an amino-terminated SAM barrier (NH2SAM) is tested. A high density and the absence of pinholes in the barrier layer are essential for a good barrier performance. First, the macroscopic quality of the NH2SAM barrier has been characterized by Water contact angle (CA) and High resolution AFM (HR-AFM). Secondly, the density and the presence and/or absence of pinholes have been tested by Ellipsometry and Cylic Voltametry (CV). Finally, the intrinsic barrier performance in form of Time- dependent dielectric breakdown (TDDB) lifetime has been extracted from planar capacitor structures that permitted to measure the leakage/Cu diffusion through barrier in the vertical direction. The Contact angle of layers formed at different deposition times show a variation of the hydrophilic SiO2 substrate to hydrophobic already with 1min deposited NH2SAM layer. A 15min deposited NH2SAM (~1nm), results in a continuous and pinhole free layer observed by HR-AFM. The refraction index (η) calculated by ellipsometry, indicates an increase in the density of the layer with the deposition time. On the other hand, cyclic voltametry shows inhibition of the electrochemical reduction of Fe3+ specimen to Fe2+ when NH2SAM are formed on ~2nmSiO2/Si electrodes. A decrease in the capacitive current is observed by increasing the layer thickness and density. The intrinsic barrier performance of the NH2SAM barrier by TDDB is demonstrated with an increase of 10 times the capacitor lifetime by comparing with no barrier system.
Nanometer Metrology of Periodic Structures With Ultrafast Optoacoustics
Authors: Grimsley Thomas J , Antonelli George Andrew , Yang Fan , Maris Humphrey J , Nurmikko Arto 
Published: August 2010

AbstractWe present an optoacoustic method to non-destructively measure the average dimensions of a periodic array of simple structures with aspect ratios greater than 10:1, which are inaccessible to AFM techniques. The technique that we describe could be used as the basis of an inline metrology tool for wafer inspection. The samples examined were test structures with high precision lithographically defined lines of silicon dioxide deposited on a silicon substrate. The thickness of the silicon dioxide was around 400 nm, and the gaps between the lines ranged from 100 nm down to smaller than 40 nm. A drop of water was placed on the sample, and an optoacoustic transducer was placed on top; measurements were taken with a water thickness less than 1 micron between the optoacoustic transducer and the sample. The water filled the spaces between the lines due to the hydrophilic nature of the sample surface. Using the picosecond ultrasonics technique, acoustic pulses are generated in a special optoacoustic transducer, transmitted through a coupling fluid (water), scattered off of the sample being examined and then return to the transducer. The returning acoustic signal shows nanometer sensitivity to the height of the lines and the specific details of their profile.
Indium Gallium Arsenide Based Non-Volatile Memory Devices with Site-Specific Self-Assembled Germanium Quantum Dot Gate
Authors: Chan Pik-Yiu , Gogna Mukesh , Suarez Ernesto , Alamoody Fuad , Karmakar Supriya , Miller Barry , Ayers John , Jain Faquir 
Published: August 2010

AbstractThis paper presents the implementation of indium gallium arsenide field-effect transistors (InGaAs FETs) as non-volatile memory using lattice-matched II-VI gate insulator and quantum dots of GeOx-cladded Ge as the floating gate. Studies have been done to show the ability of II-VI materials to act as a tunneling gate material for InGaAs based FETs, and GeOx-cladded Ge quantum dots having the ability to store charges in the floating gate of a memory device. Proposed structure of the InGaAs device is presented.
Co/HfO2 core shell nanocrystal memory
Authors: Zhou Huimei , Dorman James Anthony , Perng Ya-Chuan , Gachot Stephanie , Huang Jian , Mao Yuanbing , Chang Jane , Liu Jianlin 
Published: August 2010

AbstractMetal/high-k dielectric core shell nanocrystal memory capacitor was demonstrated. This kind of MOS memory shows good performance in charge storage capacity, programming and erasing speed. By using a self-assembled Block Co-Polymer, Co/HfO2 core shell nanocrystals were well arrayed and showed uniform dot size and inter distance between dots. Compared with traditional metal nanocrystal fabrication process with E-Beam Evaporation followed by RTA (Rapid Thermal Annealing), core shell nanocrystal memory prepared by Block Co-Polymer produces a wide memory window of 8.4V at the ±12 V voltage sweep. Co/HfO2 core shell nanocrystals prepared by low-temperature Block Co-polymer process ensure high reliability of the devices.
Effect of Ion-implantation on Forming and Resistive Switching Response of NiO Thin-Films
Authors: Elliman Robert , Saleh Muhammad , Kim Sung , Venkatachalam Dinesh , Kim Taehyun , Belay Kidane 
Published: August 2010

AbstractThe forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.
Nanocrystal Memory Device Utilizing GaN Quantum Dots by RF MBE
Authors: Dimitrakis Panagiotis , Iliopoulos Eleftherios , Normand Pascal 
Published: August 2010

AbstractThe growth of GaN-QDs by radio frequency plasma assisted molecular beam deposition (RF-MBD) on thin SiO2 films for non-volatile memories (NVM) applications is demonstrated. Thermal budget modification during the deposition allows tuning of the size and density of the QDs. Preliminary electrical characterization of GaN-QD MOS devices reveals efficient electron injection at very low voltages from the Si accumulation layer to the QDs. The observed limitation in hole injection relates adequately to the energy band diagram of the structure.
Charge Trapping Memories With Atomic Layer Deposited High-k Dielectrics Capping Layers
Authors: Nikolaou Nikolaos , Dimitrakis Panos , Normand Pascal , Giannakopoulos Konstantinos , Mergia Konstantina , Ioannou-Sougleridis Vassilios , Kukli Kaupo , Niinisto Jaakko , Ritala Mikko , Leskela Markku 
Published: August 2010

AbstractIn this work, we examine the influence of hafnium and zirconium oxides ALD precursor chemistry on the memory properties of SiO2/Si3N4/ZrO2 and SiO2/Si3N4/HfO2 non-volatile gate memory stacks. Approximately 10 nm thick ZrO2 and HfO2 layers were deposited on top of a SiO2/Si3N4 structure, functioning as blocking oxides. Both metal oxides were deposited using either alkylamides or cyclopentadienyls as metal precursors, and ozone as the oxygen source. In the case of the ZrO2 gate stacks a memory window of 6 V was determined, comprised of 4 V write window and 2 V erase window. Although no dramatic differences were evident between the ZrO2 layers, ZrO2 grown from alkylamide provided structures with higher dielectric strength. The memory structures with HfO2 blocking layers indicate that the memory window and the dielectric strength are significantly affected by the precursor. The structures with the HfO2 formed from alkylamide showed a write window of 7 V, while the films grown from cyclopentadienyl possessed window of 5 V. Comparison between the memory windows obtained using ZrO2 and HfO2 as control oxides reveals that the former provides memory structures with higher electron trapping efficiency.
Low Temperature Deposition of Ferromagnetic Ni-Mn-Ga Thin Films From Two Different Targets via rf Magnetron Sputtering
Authors: Lourenço A. C. , Figueiras F. , Das S. , Amaral J. S. , Kakazei G. N. , Karpinsky D. V. , Soares N. , Peres M. , Pereira M. J. , Tavares P. B. , Sobolev N. , Amaral V. , Santos N. M. , Kholkin Andrei L. 
Published: August 2010

AbstractLow temperature (400°C) deposition of ferromagnetic Ni-Mn-Ga thin films is successfully performed via rf magnetron sputtering technique using co-deposition of two targets Ni50Mn50 and Ni50Ga50 on sapphire (0001) and Si (100) substrates. The films are in part amorphous with significant degree of crystallinity. The obtained crystallographic structure is shown to be substrate-dependent. Films on both substrates are ferromagnetic at room temperature (Curie temperature ∼ 332.5K) with well-defined hysteresis loops, low coercivity (∼ 100 Oe) and a saturation magnetization of ∼ 200 emu/cc. At low temperature (5 K), both films show increased magnetization value with wider hysteresis loops having higher coercivity and remanent magnetization. The process is therefore effective in achieving the appropriate thermodynamic conditions to deposit thin films of the Ni-Mn-Ga austenitic phase (highly magnetic at room temperature) at relatively low substrate temperature without the need for post-deposition annealing or further thermal treatment, which is prerequisite for the device fabrication.
Magnetostatic Interactions of Two-Dimensional Arrays of Magnetic Strips
Authors: Malkinski Leszek Mariusz , Yu Minghui , Scherer II Donald 
Published: August 2010

AbstractA series of arrays consisting of Permalloy stripes with dimensions of 100 nm × 300 nm × 1500 nm was fabricated using electron beam nanolithography and magnetron sputtering followed by the lift-off process. In order to elucidate the effect of magnetostatic interactions among nanosized stripes on magnetic properties of the arrays, the separation between the stripes in different arrays was varied in the range between 100 nm and 2000 nm. Magnetic hysteresis loops of the arrays were measured using SQUID magnetometer for different orientations of the applied field with respect to the arrays. Magnetic anisotropy of the arrays was determined based on ferromagnetic resonance measurements at 9.8 GHz using EPR spectrometer. The measurements were carried out for different directions of in-plane magnetic bias filed. The angular dependence of the resonance field of the main resonant peak indicated presence of the uniaxial magnetic anisotropy due to elongated shape of the stripes. Comparison between angular curves of resonant fields for different arrays leads to the conclusion that increasing strength of magnetostatic interactions among the stripes leads to a suppression of the uniaxial anisotropy. The stripes separated by 2000 nm behave almost like non-interacting objects, but the effect of interactions becomes particularly significant for separations smaller than 600 nm. The properties of the arrays with the smallest separations resembled those of continuous films. Magnetostatic modes have been observed in the FMR spectra in addition to the main resonant peak. These modes are believed to result from dimensional confinement of lateral spinwaves in the magnetic stripes. No such modes were observed in the reference samples of solid Py films, with the in-plane applied magnetic field.
Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO2 Nanocomposite Thin Film Prepared by Sputtering Method
Authors: Hsieh Tsung-Eong , Chiang Kuo-Chang 
Published: August 2010

AbstractAgInSbTe (AIST)-SiO2 nanocomposite layer prepared by a one-step sputtering process utilizing target-attachment method was implanted in the nonvolatile floating gate memory (NFGM) devices. Device sample subjected to post annealing at 400°C for 2 min in atmospheric ambient exhibited a significant hysteresis memory window (ΔVFB) shift = 5.91V and charge density = 5.22×12 cm-2 after ±8V voltage sweep. During the retention time test, a ΔVFB shift about 3.50 V and charge loss about 28.4% were observed in the sample after a ±5V voltage stress for 104 sec. Cross-sectional TEM revealed that the nanocomposite layer contains the crystalline AIST nanoparticles with the sizes about 5 to 7 nm embedded in SiO2 matrix. XPS analysis indicated that annealing induces the reduction of antimony oxides to form metallic Sb nanocrystals and suppresses the oxygen defects and charge loss in nanocomposite layer. Analytical results illustrated that the utilization of AIST-SiO2 nanocomposite layer may simplify the preparation of NFGM device with satisfactory electrical properties, implying a promising feasibility of such a nanocomposite layer to NFGM devices.
Crystalline Path Formation in Nanoglasses of PCM
Authors: Nardone Marco , Simon Mark Alexander , Karpov Ilya V. , Karpov Victor G. 
Published: August 2010

AbstractThis work presents an analytical model of crystalline phase formation in nanoglasses of phase change memory. We describe a data loss mechanism when the cell resistance changes significantly at elevated temperatures over long periods of time with no electrical bias applied. Unlike the standard approach, which relates crystalline shunt formation to aggregates of crystalline particles forming the percolation cluster, we look at the rare events of almost rectilinear path formation in very thin structures. They can occur at crystalline volume fractions considerably lower than the critical volume fraction required for percolation. We find the characteristic parameters which can describe statistics of these rare events.
The role of vacancies in the pressure amorphisation phenomenon observed in Ge-Sb-Te phase change alloys
Authors: Krbal Milos , Kolobov Alex , Fons Paul , Tominaga Junji , Haines Julien , Pradel Annie , Ribes Michel , Levelut Claire , Le Parc Rozenn , Hanfland Michael 
Published: August 2010

AbstractWe demonstrate, both experimentally and by computer simulation, that while the metastable face-centered cubic (fcc) phase of Ge-Sb-Te becomes amorphous under hydrostatic compression at about 15 GPa, the stable trigonal phase remains crystalline. We present evidences that the pressure-induced amorphisation phenomenon strongly depends on the concentration of vacancies included in the Ge/Sb sublattice, but is thermally insensitive. Upon higher compression, a body-centered cubic phase is obtained in both cases at around 30 GPa. Upon decompression, the amorphous phase is retained when starting with the fcc phase while the initial structure is recovered when starting with the trigonal phase. We argue that the presence of vacancies and the associated subsequent large atomic displacements lead to nanoscale phase separation and the loss of the initial structure memory in the fcc staring phase of Ge-Sb-Te. We futher compare the amorphous phase obtained via the pressure route with the melt quenched amorphous phase.
Understanding Phase Change Memory Reliability and Scaling by Physical Models of the Amorphous Chalcogenide Phase
Authors: Ielmini Daniele 
Published: August 2010

AbstractPhase change memory (PCM) devices are based on the electrically-induced change of phase within an active chalcogenide material. PCM features large resistance window, fast threshold/phase switching and high endurance, thus motivating a broad interest as potential Flash replacement and/or nonvolatile storage class memory. Despite the relatively mature progress of research and technology, there is still a wide debate about the ultimate scaling perspective for PCMs. Structural relaxation, crystallization and noise affecting the amorphous chalcogenide phase need to be addressed by accurate physical models for a realistic scaling projection. This work discusses the scaling of PCM devices in terms of the conduction mechanisms and structural stability of the amorphous chalcogenide phase. Resistance window narrowing, current fluctuations, resistance drift and crystallization in the amorphous phase will be explained by a unified model for thermal excitation of the structure by many-phonon phenomena. The downscaling of the reset current, needed to reduce the cell area in memory arrays, and thermal disturb between adjacent cells during reset will be finally addressed to assess the scaling capability of high-density PCM crossbar architectures.
Stress Limited Scaling of Ge2Sb2Te5
Authors: Simpson Robert Edward , Krbal Milos , Fons Paul , Kolobov Alex , Uruga Tomoya , Tanida Hajime , Tominaga Junji 
Published: August 2010

AbstractThe influence of stress on the phase change behaviour of Ge2Sb2Te5 encapsulated by ZnS-SiO2 and TiN is investigated using temperature dependent Extended X-ray Asbsorption Fines Structure and Ellipsometry to determine the crystallisation temperature. The encapsulation material surrounding the Ge2Sb2Te5 has an increasingly dominant effect on the material's ability to change phase and can cause a profound increase in its crystallization temperature. We have experimentally shown that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress we have maintained the bulk crystallization temperature in Ge2Sb2Te5 films just 2 nm thick.
GeTe-filled Carbon Nanotubes for Data Storage Applications
Authors: Giusca Cristina E. , Stolojan Vlad , Sloan Jeremy , Shiozawa Hidetsugu , Silva Ravi 
Published: August 2010

AbstractBy virtue of their unique electronic properties, nanometer-diameter sized single-walled carbon nanotubes represent ideal candidates to function as active parts of nanoelectronic memory storage devices. We show for the first time that GeTe, a phase change material, currently considered to be one of the most promising materials for data-storage applications, can efficiently be encapsulated within single-walled carbon nanontubes of 1.4 nm diameter. Structural investigations on the encapsulated GeTe nanowires have been carried out by high resolution transmission electron microscopy. The electronic interactions between the filling material and the host nanotube have been examined using ultraviolet photoelectron spectroscopy experiments and show that the electronic structure of the encapsulating nanotube and that of the encased filling are not perturbed by the presence of each of the other component.The newly formed hybrids offer potential to operate as active elements in non-volatile electronic memory storage devices.
Band Offset Control by Interfacial Oxygen Content at GaAs:HfO2 interfaces
Authors: Wang Weichao , Wallace Robert M. , Cho Kyeongjae 
Published: August 2010

AbstractThe impact of interfacial oxygen content on the band offsets of GaAs:HfO2 interfaces was investigated using the density functional theory (DFT) method. Reference potential method was used to determine the band offsets. Moreover, GW correction was utilized to find more accurate value of the valence band edge of HfO2 and hence obtain more accurate band offsets. With gradually decreasing the interfacial O content from 100% to 30% (by changing O chemical potential corresponding to varying the growth condition), the valence band offset increases from 1.06 to 3.34 eV. It is found that this increase of the valence band offsets is inversely proportional to the charge loss of interfacial Ga atoms. Specifically, less charge loss of interfacial Ga induces less charge transfer from GaAs to HfO2 side. Consequently, the less charge loss of interfacial Ga essentially leads to an increase of the valence band offsets.