bluuebunny/crossref_metadata_2025_split huggingface dataset:
Acupuncture for Depression: Exploring Model Validity and the Related Issue of Credibility in the Context of Designing a Pragmatic Trial
Authors: Schroer Sylvia , Kanaan Mona , MacPherson Hugh , Adamson Joy 
Published: March 2011

SUMMARYIntroduction: Evaluating care that is not credible to its practitioners or patients will result in a gap between evidence and practice and the potential value, or harm, of the intervention may be underestimated. Our aim was to develop a pragmatic trial that would have better model validity and credibility than trials to date in this clinical area. Methods: In‐depth interviews; a nominal consensus technique and five arm pilot trial conducted in UK primary care using counseling and usual general practitioner (GP) care as comparisons for acupuncture. Findings: Patients with long standing, severe illness that had not responded, or partially responded to conventional treatments may be interested in using acupuncture and participating in a trial. Using a database method to recruit, pilot trial patients were mostly severely depressed (87.5%); chronically ill (60% with 3+ previous episodes), with high levels of comorbidity, and medication use. Acupuncture was as credible to pilot trial participants as usual GP care and more credible than counseling: most patients (62.5%) preferred to be allocated to acupuncture, rating it more highly at baseline than counseling or usual GP care as potentially able to benefit their depression (P = 0.002). Disparities were identified in the working models of acupuncturists and counselors that suggest inherent differences between interventions in terms of the process and intended potential outcomes of therapy, as well as the interaction between patients and therapists. Conclusion: The Medical Research Council (MRC) framework with its phased, mixed method approach has helped to develop research that has better model validity than trials to date in this field. The next phase of research will need to involve acupuncture and counseling practitioners to help researchers to develop realistic and credible care packages for a full‐scale trial, where patients are likely to be severely and chronically ill.
Assessment of body fat in the pony: Part I. Relationships between the anatomical distribution of adipose tissue, body composition and body condition
Authors: DUGDALE A. H. A. , CURTIS G. C. , HARRIS P. A. , ARGO C. MC. 
Published: March 2011

SummaryReasons for performing study:Evaluation of equine body fat content is important for nutritional and clinical purposes. However, our understanding of total body fat and its regional distribution in the body is sparse. Currently, body fat evaluation relies on the subjective assessment of body condition score (BCS), which has never been validated against ‘gold standard’ chemical analysis or dissection measurements in ponies.Objectives:To define the relationships between subjective (BCS), objective (morphometric) indices of body fat and ‘gold standard’ measurements of actual body composition.Hypotheses:BCS and morphometry offer valid, noninvasive methods for determination of body fat in equids.Methods:Seven mature (mean ± s.e. 13 ± 3 years, 212 ± 14 kg, BCS 1.25–7/9), Welsh Mountain pony mares, destined for euthanasia (for nonresearch purposes), were used. For all ponies, body mass (BM), BCS and various morphometric measurements were recorded. Following euthanasia, all ponies were systematically dissected. Discrete white adipose tissue (WAT) depots were independently described. Gross, body chemical composition was determined by proximate analyses.Results:Total somatic soft tissues increased linearly (r2= 1.00), whereas body WAT content (1–26% live BM) increased exponentially (r2= 0.96), with BCS. WAT was equally distributed between internal and external sites in all animals irrespective of BCS. Nuchal fat was a poor predictor of total WAT (r2= 0.66). Periorbital WAT did not alter with BCS (r2= 0.01). Heart girth:withers height and ultrasonic retroperitoneal fat depth were closely associated with total, chemically‐extracted lipid which comprised 1–29% live BM (r2= 0.91 and 0.88, respectively).Conclusions and potential relevance:The exponential relationship between BCS and total body WAT/lipid suggests that BCS is unlikely to be a sensitive index of body fat for animals in moderate‐obese states. Morphometric measurements (body girths and retroperitonel fat depth) may be useful to augment subjective BCS systems.
Lattice Imaging of Silicide-Silicon Interfaces
Authors: Chen L. J. , Mayer J. W. , Tu K. N. , Sheng T. T. 
Published: March 2011

The interfaces of both epitaxial and non-epitaxial silicides and silicon were investigated by the direct lattice imaging method using cross-sectional samples. Non-epitaxial CoSi2 on silicon was observed to have a curved interface. Epitaxial CoSi2 , however, was found to be smooth within a facet. No evidence of an amorphous layer at the interface was obtained.Epitaxial NiSi2 on Si(001) was found to be heavily faceted. The facets are on {111} and {100} planes with the former more frequently observed. The interface between Si(111) and NiSi2 is also faceted but less so than that for Si(001). The interface is very rough on a large scale. Straight boundary lines corresponding to faceted planes were observed which indicated that the interfaces on an atomic scale were quite smooth. Defect clusters and planar defects were also observed at the interfaces.
In Situ Ultrahigh Vacuum Friction Measurement and Wear Track Analysis of Ion Implanted 304 Stainless Steel
Authors: Pope Larry E. , Follstaedt David M. , Knapp James A. , Barbour J. Charles 
Published: March 2011

ABSTRACTThe dual ion implantation of Ti and C into 304 stainless steel has been found to reduce friction and wear in ultrahigh vacuum (UHV). The implantation treatment producing this result, 4.6 × 1017 Ti/cm2 (180 keV) followed by 2.0 × 1017 C/cm2 (50 keV), produced TiC precipitates dispersed in an amorphous surface layer. Friction and wear track compositions were measured in situ with a scanning Auger microprobe without removing the pin from the track. This treatment decreased the friction coefficient from 1.2 to 0.6–0.8 and the wear track width from 342 μm to 225 pm after 1000 cycles. Relative to unimplanted 304, wear tracks formed in UHV and air on implanted ‘304 had more N and less C. Oxygen and the metallic elements were similar in concentration, except for the presence of implanted Ti. Friction coefficients measured in air were less than those in UHV; track composition suggests that oxides or adsorbed moisture helped lower the friction in air.
Combined Effect of Ion Implantation and Ion Beam Mixing on Metal Surface
Authors: Wei Tian , Tau Peng 
Published: March 2011

ABSTRACTThe article is an account of the development of a new technique to improve the surface properties of materials by ion beam bombardment combined effect of ion implantation and ion beam mixing.Ti+ ion beam has been used to mix the surface of Cr-deposited on to Fe or to implant Ti+ into the surface of Fe. By comparing the electrochemical properties, it has been shown that the corrosion resistance of Cr-deposited Fe surface mixed with Ti + ion beam is much better than that of Ti+ ion implanted Fe surface, the critical current density Ic and minimum anodic passive current density Im are decreased by one order of magnitude in deacrated 1M CH3 -COONa-CH3 COOH solution (pH 7.3, 25°C). AES and SIMS observation show Nhat the gombined effect of implantation and mixing has been really achieved.
Wear Properties and Surface Structure of Ion Implanted Glassy Carbon
Authors: Yoshida Kazuo , Okuno Kazuhiko , Katagiri Gen , Ishitani Akira , Takahashi Katsuo , Iwaki Masaya 
Published: March 2011

ABSTRACTWear properties of Li+, K+, C+, Cl+, and Ti+ implanted glassy carbons (GC) have been studied by wear tests using silicon carbide abrasive paper. It has been found that ion implantation is effective for improving wear resistance of GC. The measurements of Raman spectra revealed formation of an amorphous structure on the surface. Anomalous depth profiles with flat concentration distribution of Li and K atoms were observed by a secondary ion mass spectroscopy (SIMS). In conclusion. the formation of an amorphous structure seems to explain the improvement in wear resistance.
An Ion Beam Simulation of the Swelling of U3Si
Authors: Allen Charles W. , Birtcher Robert C. , Rehn Lynn E. , Hofman Gerard L. 
Published: March 2011

ABSTRACTUranium intermetallics are under consideration as possible low-enrichment reactor fuels. These materials divide into two classes with regard to dimensional stability during their service lifetime: those which suffer extreme dimensional growth and those which do not. It has been suggested that the rapid-swelling materials are those that become glassy under irradiation while the low-swelling materials are those that remain crystalline. The structural and dimensional stabilities of U3Si (depleted uranium) have been investigated as a function of temperature duning Kr irradiation by in situ. HVEM observations. Below 550 K, this material becomes glassy during 1.0 MeV Kr irradiation. Prolonged irradiation at 475 K also leads to rapid darkening of the TEM bright field image of the specimen, growth of the initial perforation at rates which far exceed those due to sputtering, and formation of additional thin areas and holes. Irradiation at 615 K does not result in observable image darkening or rapid growth of the initial perforation. After 2×1020 Kr m-2, the crystalline material irradiated at 615 K is stabilized against subsequent ion-irradiation-induced amorphization and growth at 475 K. Similarly, after 2×1020 Kr m-2 at 475 K, the glassy phase persists at 620 K under additional Kr irradiation, and the rapid growth continues. The mechanism of the irradiation-induced growth of the glassy material does not involve gas precipitation but rather may involve deformation by viscous flow assisted by the defects generated during irradiation.
The Effect of Implant Species on the Stability of Ion Implantation Damage
Authors: Jones K. S. , Prussin S. , Venables D. 
Published: March 2011

ABSTRACTA systematic study of the effect of the chemical species, implanted into silicon, on the stability of the residual damage has been performed. Plan-view and cross-sectional transmission electron microscopy (TEM) studies show that the stability of the end of range damage (category II) defects upon annealing depends dramatically upon the implant species. This is exemplified by the a comparison of 69Ga and 72Ge implants in which a decrease in the dislocation density by over four orders is noted for 69Ga implants compared to 72Ge implants after identical annealing cycles. Additional comparisons of species with similar atomic masses indicate that this destabilizing influence on the dislocation loops by the implant species is related to exceeding the solid solubility of the implanted species. As a result of this dislocation loop destabilization effect complete elimination of the dislocation loops can be realized after relatively short thermal cycling. Evidence is presented indicating that the precipitates which form upon exceeding the solid solubility (category V defects) are dissolving during this enhanced defect dissolution process.
The Promotion of Silicide Formation using a Scanned Silicon Ion Beam
Authors: Williams E. J. , Bithell E. G. , Boothroyd C. B. , Stobbs W. M. , Young R. J. , Cleaver J. R. A. 
Published: March 2011

ABSTRACTThe promotion of silicide reactions at the interface between silicon and a metal overlayer is described, the reactions being initiated by scanned ion beams. The relative effects of low and high energy Si+ and Si2+ beams are discussed and the results of subsequent annealing are compared with those seen when using low energy (5keV) argon ion beams. The implications for the writing of metallisation lines are also noted.
In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide
Authors: Bench M. W. , Robertson I. M. , Kirk M. A. 
Published: March 2011

ABSTRACTTransmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.
The Effects of Doping and Temperature on the Fermi Level and its Relationship to the Recrystallization Growth Velocity in Ion-Implanted Silicon
Authors: Mosley L. E. , Paesler M. A. , Richard P. D. 
Published: March 2011

ABSTRACTIt has been observed that doping produces an enhancement in the recrystallization growth rate of silicon made amorphous by ionimplantation. This enhancement has been attributed to a shift of the Fermi level with doping. Evidence supporting this is based on the compensating effect of implantation of n- and p-type dopants together. We have previously proposed a model of the recrystallization growth process based on the diffusion of dangling bonds. We suggested that the rate enhancement is due to band bending at the amorphous-crystalline interface produced by doping. We have calculated the change in activation energy for the recrystallization growth velocity for a number of doping concentrations as a function of temperature. The major contribution to the apparent lowering of the activation energy with doping in an Arrhenius plot of the growth velocity versus I/kT is due to the temperature dependence of the Fermi level. Experimental data are compared with the calculated results. In addition differences in the measured growth rates in thermal and laser annealed samples are discussed, with primary emphasis on the lack of a change in the activation energy with doping in the laser annealed case.
Ion Induced Quasicrystalline Transformation in the Al-Cr-Er System
Authors: Lilienfeld David A. 
Published: March 2011

ABSTRACTThe Aluminum-rich end of the Al-Cr-Er ternary system was investigated in an effort to find new quasicrystalline alloys. Composition, dose dependence and substrate temperatures during ion irradiation were varied. A quasicrystal alloy with the Al-Cr intensity pattern was found at low Er content. Another phase was observed that did not index to any known equilibrium structure. This new phase has d spacings and diffraction line intensities which are similar to those of the Al-Li-Cu quasicrystalline phase.
Optical Properties of Picosecond Laser Irradiated Graphite
Authors: Malvezzi A. M. , Reverberi G. , Bloembergen N. 
Published: March 2011

ABSTRACTWe have employed pump-and-probe techniques coupled to ellipsometry to measure the transient complex index of refraction at 1.064 μm of higly oriented pyrolitic graphite (HOPG) interacting with 20 ps, .532 μm laser pulses. When the laser pump fluence exceeds the threshold value for melting, measurements indicate a substantial decrease of both real and imaginary parts of the index of refraction, thus confirming that molten graphite becomes less metallic. Measurements provide also direct evidence of the insensitivity of our picosecond results to evaporation from the irradiated surface.
Time-Resolved and Nicrostructural Studies of Solidification in Undercooled Liquid Silicon
Authors: Lowndes D. H. , Pennycook S. J. , Wood R. F. , Jellison G. E. , Withrow S. P. 
Published: March 2011

ABSTRACTNanosecond resolution visible (633 nm) and near-infrared (1152 nm) reflectivity measurements have been used, together with transmission electronmicroscopy (TEM), to study pulsed KrF (248 nm) laser melting and subsequent solidification of thick (190–410 nm) amorphous (a) silicon layers. The measurements cover the entire laser energy density (El) range between the onset of melting (∼ 0.12 J/cm2) and the completion of epitaxial crystallization (∼1.1 J/cm2). Four distinct El-regimes of melting and solidification are found for the 410-nm thick a-Si layers. For El > 0.25 J/cm2, the time of formation, velocity and final depth of “explosively” propagating undercooled liquid layers were measured in specimens that had been uniformly implanted with Si, Ge, or Cu. TEM shows that the “fine-grained polycrystalline Si” produced by explosive crystallization (XC) actually contains large numbers of disk-shaped Si flakes that have largely amorphous centers and are visible only in plan view. The optical and TEM measurements suggest (1) that flakes are the crystallization events that initiate XC, and (2) that lateral heat flow (parallel to the sample surface) must be taken into account in order to understand flake formation. Results of new two-dimensional (2-D) model calculations of heat flow and solidification are presented. These calculations confirm the importance of 2-D heat flow and crystallite growth early in the solidification process. For 0.3 4 < El > 1.0 J/cm2, pronounced changes in both the shape and the duration of the reflectivity signals provide information about the growth of polycrystalline grains; this information can be correlated with post-irradiation plan and cross-section view TEM microstructural measurements.
Interface Temperatures and Temperature Gradients in Silicon During Pulsed Laser Irradiation
Authors: Larson B. C. , Tischler J. Z. , Mills D. M. 
Published: March 2011

ABSTRACTNanosecond-resolution x-ray diffraction has been used to measure the interface and lattice temperatures of silicon during rapid, pulsed-laser induced melting and regrowth in silicon. Measurements have been carried out on <100> and <111> oriented silicon using the (100) and (111) reflections to measure the thermal strain during 30 ns, 1.1 J/cm2 KrF laser pulses. The results indicate overheating to be low (< 2 K/m/s) for both orientations with undercooling rates of 5.6 K/m/s and 11.4 K/m/s for the <100> and <111> orientations, respectively. Observations of higher than expected temperature gradients below the liquidsolid interface have been discussed in terms of restricted heat flow under high gradients.
Interface Velocity Transients During Melting of a-Si/C-Si Thin Films
Authors: Tsao J. Y. , Aziz M. J. , Peercy P. S. , Thompson M. O. 
Published: March 2011

ABSTRACTWe report transient conductance measurements of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for analyzing these measurements than described in previous work [1]. From these analyses are extracted relations between the melting velocities of a-Si and c-Si at a given interface temperature, and between the temperatures during steady-state melting of a-Si and c-Si at a given interface velocity.
Liquid Mediated Pulsed Laser Processing of Silicon
Authors: Biunno Nicholas , Narayan J. , Singh R. K. , Hofmeister S. K. , Schreiner A. F. , Sito M. L. , Auciello O. H. 
Published: March 2011

ABSTRACTWe have investigated the formation of thin layers of carbides and nitrides by irradiating silicon (100) single crystal immersed in clear organic solvents or liquid ammonia. The liquids were transparent to the excimer laser (λ=308 nm, τ45 ns) used, at energy densities from 0.5 to 3.0 Jcm−2. Most of the laser energy was absorbed by the silicon specimens above a certain threshold to cause melting of the surface to a depth of approximately 250 nm. The pool of liquid silicon reacts with the solvents or ammonia in a saturated high pressure vapor phase for a duration of approximately 200 ns per pulse. The specimens were irradiated with a number of pulses ranging from 1 to 50. The films were then analyzed for structure and composition using TEM, AES, and IR spectroscopy. We report here calculations of laser-solid interactions, microstructure, and properties of the resulting thin films.
Phase Selection in Undercooled Liquids of Pulsed-Laser Melted Alloys
Authors: Follstaedt D. M. , Peercy P. S. , Perepezko J. H. 
Published: March 2011

ABSTRACTThe use of thermodynamic analysis of phase relationships to identify metastable conditions for generating undercooled liquids by pulsed laser melting, and to interpret the resulting microstructures is illustrated from studies of Mn, FeV and TiAl. Phases with simple, disordered structures are found to nucleate and grow within tens of nanoseconds in liquids undercooled by 50–100 K. An extended transformation depth is found in which the stable high-temperature a phase replaces the metastable a phase in FeV due to the heat release from the rapidly forming a phase. The formation of the disordered bcc structure and of a metallic glass in the melt of the ordered compound γ-TiAl indicate that regrowth of this phase is sufficiently slow to generate undercoolings of – 1000 K.
Crystallization and Glass Foriation in Electron and Laser Beam Irradiated Cu-Zr Alloys
Authors: Huang J. S. , Kaufmann E. N. , Wall M. A. , Olsen B. L. 
Published: March 2011

ABSTRACTFour Cu-Zr alloys, Cu56Zr44, Cu50Zr50, Cu47Zr53, and Cu33Zr67, were surface melted with electron and pulsed laser beams to compare their kinetics of nucleation, growth and glass formation. It was observed that the ease of glass formation increased in the order: Cu33Zr67, Cu47Zr53, Cu56Zr44, and Cu50Zr50. The nucleation and regrowth produced different metastable phases. At the equiatomic composition, the preferred phase is a CsCl-type (B2) BCC structure. As the composition deviates from this, the preferred phase is either orthorhombic or tetragonal with a much larger unit cell not previously reported in the literature. The maximum growth velocity of these metastable phases was found to be about 0.025 m/s. The slow kinetics are responsible for the ease of glass formation in these systems.
Rapid E-Beam Heating for Measuring Thermodynamics of Metastable Materials
Authors: Knapp J. A. , Follstaedt D. M. 
Published: March 2011

ABSTRACTA line-source electron-beam system has been used to heat thin surface layers of metastable phases at a rate which precludes solid-state transformations to stable phases, thus permitting the observation of melting transitions normally missed with slow heating. A detailed example of a new approach to this method is shown for metastable icosahedral Al-Re and. crystalline Al6Re.
HREM In-Situ Studies of Electron Irradiation Effects in Oxides
Authors: Luzzi D. E. , Marks L. D. , Buckett M. I. , Strane J. W. , Wessels B. W. , Stair P. C. 
Published: March 2011

ABSTRACTHigh resolution electron microscope (HREM) studies provide the ability to study desorption and sputtering from the perspective of the analysis of the resultant materials, their structure, composition and atomic registry (orientation with respect to the original,material and the irradiation). This is a neglected facet of surface irradiation effects research, yet it is the most important from the technological point of view. In the current study, surface electron irradiation processes in oxides were studied in-situ in a Hitachi H-9000 HREM operated at incident electron energies of 100–300 keV. It was found that a wide range of processes occur in the HREM which are dependent on the energy and flux of the incident electrons and on the material properties. Both ballistic and electronic irradiation damage was observed and the material responses included surface sputtering, amorphisation, chemical disordering, desorption of O and metal surface layer creation, surface roughening and bulk defect creation.