bluuebunny/crossref_metadata_2025_split huggingface dataset:
The Morphology of Blends of Linear and Branched Polyethylenes by Small-Angle Neutron and X-Ray Scattering
Authors: Londono J. D. , Wignall G. D. , Alamo R. G. , Mandelkern L. , S.Lin J. 
Published: April 2011

ABSTRACTThe solid-state morphology and liquid-state homogeneity of blends of high-density polyethylene (HDPE) and low-density polyethylene (LDPE) were investigated by small-angle neutron and x-ray scattering (SANS and SAXS). The solid state morphology was investigated as a function of composition and cooling rate from the melt. After slow cooling, the evidence indicated that the mixtures were either completely (HDPE-rich blends) or almost completely (LDPE-rich blends) phase separated into separate HDPE and LDPE lamellae over the whole compositional range. In contrast, for rapidly quenched blends the components are extensively co-crystallized for all concentrations, though the SANS data indicated that the branched component had a tendency to be preferentially located in the inter-lamellar regions. In the liquid state, the blends were homogenous at all compositions, showing that the solid state morphology is not determined by the melt structure, but is a function of the crystallization kinetics. Further evidence for blend homogeneity in the liquid is presented. In particular we examine the hypothesis that a phase separated mixture might give a scattering pattern similar to a homogenous blend if the domain sizes were larger that the maximum spatial resolution of the SANS experiment (D > 2π/Qmin ~ 2000Å). In this scenario, the differential scattering cross section dΣ/dΩ(Q) ~ Q-2, though phase separation decreases the cross section in this Q-range with respect to the homogenous blend. For HDPE/LDPE blends in the melt, this decrease in intensity was not observed, thus ruling out the possibility of phase separation.
Possible Standard Specimens for Neutron Diffraction Residual Stress Measurements
Authors: Brand P.C. , Prask H.J. , Blackburn J. , Fields R.J. , Proctor T.M. 
Published: April 2011

ABSTRACTIncreasingly, sub-surface residual stress measurements by means of neutron diffraction are being conducted at various laboratories around the world. Unlike X-ray diffraction residual stress measurement setups, neutron instruments in use worldwide vary widely in design, neutron flux, and level of dedication towards residual stress measurements. Although confidence in the neutron technique has increased within the materials science and engineering communities, no demonstration of standardization or consistency between laboratories has been made. One of the steps in the direction of such standardization is the development of standard specimens, that have well characterized residual stress states and which could be examined worldwide.In this paper we will examine two options for a neutron stress standard specimen. 1) A steel ring-plug specimen with very well defined diametrical interference. 2) A spot weld in a High Strength Low Alloy steel disk. The results of neutron residual stress measurements on these specimens will be discussed and conclusions as to their usefulness as neutron stress standards will be presented.
Investigation of Portland Cement and Pure C3S Using 1-D Sans
Authors: Berliner R. , Heuser B. J. , Popovici M. 
Published: April 2011

ABSTRACTThe effect of contrast matching in ordinary Portland cement (OPC) and pure C3S has been investigated as a function of time after hydration using the 1-D small-angle scattering technique. The observed scattering response of OPC hydrated with 100% D2O increased in time, while the response of OPC hydrated with a null water mixture did not. The increase in scattering is therefore attributed to the formation of bubbles in the water-filled pores of the hydrating cement paste. The addition of 1% CaCl2 to OPC increased the kinetics of bubble formation considerably. Based on similar contrast measurements, we have concluded that bubbles do not form in pure C3S. However, the addition of 1% CaCl2 was found to induce bubble formation in the hydrated C3S compound.
Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing
Authors: He L. , Li E. , Shi Z.Q. , Jiang R.L. , Liu J. L. , Shi Y. , Zheng Y.D. 
Published: April 2011

ABSTRACTSchottky diodes were fabricated by evaporating metal thin layers on p-Si1-xGex by cryogenic processing. The cryogenic processing, with substrate temperature cooled to as low as 77K (LT), has been successfully used to enhance metal/III-V semiconductor Schottky barrier height[1]. The electrical characteristics of the diodes were investigated by current-voltage (IV) and current-temperature (I-T) measurements. In order to study the effect of silicide formation on diode characteristics, furnace annealing was performed in nitrogen atmosphere at 450°C and 550°C, respectively. Two kinds of samples with gemanium composition x of 0.17 and 0.20 were used. The electrical characteristics showed the barrier height фB decreased with the increase of the gemanium composition. The annealing temperatures up till to 550°C did not affect the I-V characteristics at room temperature, however, the conduction mechanism showed obvious difference comparing to the as-deposited diodes by I-V-T analysis. For Pd as Schottky metal, very similar results were obtained for the LT as-deposited diodes and the ordinary room temperature (RT) deposited diodes after 550° annealing, they both showed thermionic emission dominated conduction mechanism.
Local Measurements of Surfaces Stress
Authors: Twesten Ray D. , Gibson J. Murray 
Published: April 2011

ABSTRACTWe have recently developed a method of local stress measurement that can be applied at the submicron level to measure differences in intrinsic stress at both free surfaces and buried interfaces. The method exploits the fact that transmission electron microscopy readily reveals local bulk strain fields produced by surface or interfacial stress differences. Using quantitative image analysis and simulation, we can determine the value of this stress difference. We have successfully applied this technique to the clean Si(111) surface during 7×7-1×1 phase coexistence and have determined the stress difference to be 30±5 meV/Å2.
Plasma-Enhanced Chemical Vapor Deposition of Metal and Metal Silicide Films
Authors: Hess Dennis W. 
Published: April 2011

AbstractPlasma-enhanced CVD (PECVD) has been widely used for the deposition of insulating and semiconducting thin films. In recent years, interest has arisen in the use of PECVD to form metal layers for barrier, contact, and interconnect applications. Plasma deposition conditions that result in the formation of conducting films of transition metals, transition metal silicides, and transition metal nitrides are discussed. Particular attention is given to the as-deposited resistivities of these films, and their relationship to the gas phase reactants. The effects of postdeposition heat treatments are also discussed.
Laser Beam Lithography of Metal Oxide Electrodes for PZT Memory Applications
Authors: Norton Jarrod L. , Mansour Said A. , Liedl G. L. , Bement Arden L. , Slamovich Elliott B. , Venkatraman C. 
Published: April 2011

ABSTRACTCurrent metal/metal oxide patterning techniques typically involve photolithography, an expensive, time-consuming process, and/or a vacuum system, which also adds significantly to the cost. In this study, fabrication of metal oxide upper electrodes for Pb(ZrxTi1-x)O3 (PZT) memories by metallorganic decomposition (MOD) was coupled with laser beam patterning. Metal oxide organic precursors were treated with an absorption-enhancing dye and were spun on to ferroelectric PZT films followed by selective area laser beam exposure. This technique was employed to pattern RuO2 and (La,Sr)CoO3 electrodes. A variety of patterns (dot, line, and circular) were prepared which demonstrates the suitability of laser patterning for a variety of applications. The minimum power density required to generate a continuous conductive oxide pattern was found to be approximately 2.5 kW/cm2 at a scan speed of 25 mm/min. Resistivity values for the patterned lines were 660 Ω-cm for RuO2 and 59 mΩ-cm for LSCO.
Process Integration Of Low-Dielectric-Constant Materials
Authors: Jeng Shin-Puu , Taylor Kelly , Chang Mi-Chang , Ting Larry , Lee Charles , Mcanally Peter , Seha Tom , Numata Ken , Tanaka Tsuyoshi , Havemann Robert H. 
Published: April 2011

AbstractAs device geometries and operating voltage continue to scale while functional density increases, it is imperative to reduce the RC time delay. The replacement of Si0 2 as an intermetal dielectric with an insulator of lower dielectric constant is a particularly attractive solution since it provides immediate performance improvement through reduction in capacitance. An embedded polymer integration scheme improves the interconnect performance through line-to-line capacitance reduction by using polymer only between tightly spaced lines. The gapfill polymeric materials do not degrade the electromigration performance of standard multilayered TiN/Al/TiN interconnects. Embedded polymers alleviate many of the integration and reliability problems associated with polymer integration, and can be easily adopted into a standard production process.
The Formation Al2O3/V2O3 Multilayer Structures by High-Dose Ion Implantation
Authors: Gea Laurence A. , Boatner L. A. , Rankin Janet , Budai J. D. 
Published: April 2011

ABSTRACTHigh-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of cx-A1203. Thin, two-dimensional multilayered structures have been formed by implanting c -axis and a -axis-oriented single crystals of A1203 at room temperature with vanadium (1017 ions/cm2 at 300 keV) and oxygen (2 × 1017 ions/cm 2, 120 keV) followed by a rapid anneal at 1000ºC. Cross-sectional TEM studies showed thatthis process produced a buried layer of V2O3 located about 120 nm below the A12O3 surface. X-raydiffraction investigations revealed that this layer is epitaxially oriented in three dimensions with respect to the host A12O3 lattice. The orientational relationship was subsequently confirmed by RBS/ channeling techniques. V2O3 exhibits a first-order phase transition at about 155 K that is accompanied by striking changes in its electrical and opticalproperties, and this phase transition was observed through in-situ TEM cooling studies ofcross-sectional samples.
High-Resolution Transmission Electron Microscopy Study of Metallic Spin-Glass/Amorphous Silicon Multilayers
Authors: Howell David A. , Crimp Martin A. , Hoines Lilian M. , Bass J. 
Published: April 2011

ABSTRACTHigh-resolution transmission electron microscopy has been used to investigate the structure and growth behavior of three separate multilayer systems composed of spin-glass alloys(AuFe.03,CuMn.15, and AgMn.09) alternating with amorphous silicon. Each of the three systems was fabricated with two different sample configurations. The first consisted of bilayers with 3 nm spinglass alloy and 7 nm amorphous siliconlayers. The second consisted of 7 nm spin-glass alloy and 7 nm amorphous silicon layers. HRTEM images of ion-milled cross-sectioned samples revealed variations in the degree of crystallinity of the spin-glass material. Variations in the amount and symmetry of interlayer formation were also observed. Systematic studies of such variations should help to explain differences in their measured spin-glass properties.
Interference Effects In X-Ray Specular Reflectivity from Thin Films
Authors: Lagomarsino S. , Fonzo S. Di , Jark W. , Muller B. , Cedola A. , Pelka G. 
Published: April 2011

ABSTRACTA strong resonance effect in the specular reflectivity of a C layer deposited on a Ni surface has been measured. The e.m. field intensity distribution has been monitored by measuring the fluorescence intensity of an ultra-thin Ti layer placed in the C film. The reflected intensity and the fluorescence yield of Ti and Ar (this last trapped in the film because of the deposition by sputtering) have been measured in different samples with a different location of the Ti layer. The results show that with this method a nondestructive, accurate determination of the Ti position can be achieved with a relative accuracy of 10−2
Segregation of Si and Cu at AlSiCu / TiN Interfaces
Authors: Kameyama A. , Yaoita A. , Kitano T. , Saito S. 
Published: April 2011

ABSTRACTThe behavior of Cu and Si in the Al-alloy / TiN interface has been demonstrated by techniques of SIMS, GDS, XRD and AES. Cu and Si were observed to segregate at the AlSiCu / TiN interfaces just after sputtered. This segregation occurred to form a layered structure, not an island one. As these materials at the interface remained to exist even after annealing, the distribution of Cu and Si after annealing would be governed by that just as sputtered. The segregation behavior of Cu in A1Cu / TiN structure was the same as that of AlSiCu / TiN.
In-Situ resistance Measurements During Rapid Thermal Annealing for Process Characterization
Authors: Colgan E. G. , Cabral C. , Clevenger L. A. , Harper J. M. E. 
Published: April 2011

AbstractMeasurement of resistance in-situ during rapid thermal annealing is a powerful technique for process characterization and optimization. A major advantage of in-situ resistance measurements is the very rapid process learning. With silicides, in-situ resistance measurements can quickly determine an appropriate thermal process in which a low resistance silicide phase is formed without the agglomeration or inversion of silicide/polycrystalline silicon structures. One example is an optimized two step anneal for CoSi2 formation which was developed in less than one day. Examples of process characterization include determining the phase formation kinetics of TiSi2 (C49 and C54), Co2Si, and CoSi2 using in-situ ramped resistance measurements. The stability of TiSi2 or CoSi2/poly-Si structures has also been characterized by isothermal measurements. Resistance measurements have been made at heating rates from 1 to 100°C/s and temperatures up to 1000°C. The sample temperature was calibrated by melting Ag, Al, or Au/Si eutectics.
Modeling of Aspect Ratio Dependent Etching in an Inductively Coupled Plasma
Authors: Han J.S. , McVittie J.P. 
Published: April 2011

ABSTRACTSPEEDIE is used to simulate aspect ratio dependent etching of silicon dioxide in an inductively coupled plasma. Overhang test structures and standard via/trench structures are etched in the system under standard processing conditions. Results from the overhang test structure yield information about the ion angular distribution and aid in the development of the model. The simultaneous etching and deposition model includes such effects as ion enhanced polymer deposition, angle dependent polymer sputtering, Langmuir adsorption saturation model, and surface dependent sticking probability. The model is able to capture all the lag trends, defined as the difference in etch rate for different aspect ratios, and profiles accurately.
Dynamic Simulation of Ultra-Shallow Implantation Profiles in Single-Crystalline Silicon
Authors: Posselt Matthias 
Published: April 2011

ABSTRACTThe binary collision code Crystal-TRIM is applied to simulate 15 keV BF+2 and As+ implantations into channeling and "random" directions, at different doses. The buildup of radiation damage is described by assuming statistical creation of local amorphous regions and formation of amorphous zones if the density and/or size of the local amorphous regions exceeds a critical value. Damage accumulation during ion bombardment causes enhanced dechanneling and, therefore, the alteration of the shape of range and damage profiles. The depth profiles calculated by Crystal-TRIM show a good agreement with experimental data. The thickness of the amorphous layers formed at high doses is also in accordance with measurements.
A New Flexible Rapid Thermal Processing System
Authors: Saraswat K. C. , Chen Y. , Degertekin L. , Khuri-Yakub B. T. 
Published: April 2011

ABSTRACTA highly flexible Rapid Thermal Multiprocessing (RTM) reactor is described. This flexibility is the result of several new innovations: a lamp system, an acoustic thermometer and a real-time control system. The new lamp has been optimally designed through the use of a “virtual reactor” methodology to obtain the best possible wafer temperature uniformity. It consists of multiple concentric rings composed of light bulbs with horizontal filaments. Each ring is independently and dynamically controlled providing better control over the spatial and temporal optical flux profile resulting in excellent temperature uniformity over a wide range of process conditions. An acoustic thermometer non-invasively allows complete wafer temperature tomography under all process conditions - a critically important measurement never obtained before. For real-time equipment and process control a model based multivariable control system has been developed. Extensive integration of computers and related technology for specification, communication, execution, monitoring, control, and diagnosis demonstrates the programmability of the RTM.
In-Situ Resistance Measurements During Rapid Thermal Annealing for Process Characterization
Authors: Colgan E.G. , Cabral C. , Clevenger L.A. , Harper J.M.E. 
Published: April 2011

ABSTRACTMeasurement of resistance in-situ during rapid thermal annealing is a powerful technique for process characterization and optimization. A major advantage of in-situ resistance measurements is the very rapid process learning. With silicides, in-situ resistance measurements can quickly determine an appropriate thermal process in which a low resistance silicide phase is formed without the agglomeration or inversion of silicide/polycrystalline silicon structures. One example is an optimized two step anneal for CoSi2 formation which was developed in less than one clay. Examples of process characterization include determining the phase formation kinetics of TiSi2 (C49 and C54), Co2Si, and CoSi2 using in-situ ramped resistance measurements. The stability of TiSi2 or CoSi2/poly-Si structures has also been characterized by isothermal measurements. Resistance measurements have been made at heating rates from 1 to 100°C/s and temperatures up to 1000°C. The sample temperature was calibrated by melting Ag, Al, or Au/Si eutectics.
Design-Coupled Manufacturing
Authors: Lemnios Zachary J. 
Published: April 2011

ABSTRACTA new approach to semiconductor manufacturing is necessary to decouple end product cost from factory volume. The economy of scale model for manufacturing semiconductor integrated circuits is leading to factories that cost in excess of $1 billion and with costs anticipated to increase nonlinearly. Perhaps of greater concern is that process development and integration costs are of the same magnitude. The Advanced Research Projects Agency (ARPA) has funded several stand-alone research programs to explore new ways of designing and fabricating leading-edge semiconductors. The next steps are to tightly couple design and manufacturing through powerful new frameworks and embedded intelligence with tools. This new manufacturing capability based on flexible, intelligent equipment coupled to a powerful design framework could lead to a leading-edge manufacturing capability, but at a fraction of the cost of a conventional factory. Furthermore, this manufacturing model supports innovation and could lead to a new generation of ICs and systems. The key elements necessary to enable this new semiconductor fabrication environment is described.
Monte-Carlo simulation of the deposition process in PVD-technoIogy
Authors: Lugscheider E. , Knotek O. , Löffler F. , Schnaut U. , Eckert P. 
Published: April 2011

ABSTRACTThe Magnetron Sputter Ion Plating (MSIP) technology has been applied in a wide range of modem technological fields, due to the virtually unlimited potential of coating and substrate materials. However, up to now, the development of optimization has been depending mainly on empiricism and experiments.Energies and the directions of the particles sputtered with various ejection angles and initial energies from the target surface are changed due to collisions with gas atoms during their movement within the sputtering chamber. Therefore the particles have a distribution of incident energies and angles which have a great influence on structure and properties of thin film coatings. This paper describes computer investigations to simulate the motions of the particles from target to substrate using a Monte-Carlo method and a binary collision approximation. The applied model takes into account non-uniform sputtering effects of the target in the MSIP process due to the magnetic field and the erosion zone.
Effects of ECR N2O-Plasma Nitridation on Thermal Oxide Characteristics
Authors: Lee Jin-Woo , Lee Jung-Yeal , Choi Deuk-Sung , Hur Sung-Hoi , Kim Choong-Ki , Han Chul-Hi 
Published: April 2011

AbstractThe effects of electron cyclotron resonance (ECR) N2O-plasma nitridation on the characteristics of thermal SiO2 have been investigated. Although the ECR N2O-plasma nitridation was performed at low-temperature(≤400°C), it was found that oxynitride layer can be successfully grown at the Si/SiO2 interface. The atomic concentration of nitrogen near the Si/SiO2 interface was comparable to that of high temperature N2O annealing. The ECR N2O-plasma nitrided thermal SiO2 exhibits higher breakdown field characteristics, higher time-to-breakdown and charge-to-breakdown values in comparison with those of thermal SiO2. In addition, ECR N2O-plasma nitrided thermal SiO2 shows improved charge trapping properties
A1/A1-Oxide Interface Diffusion During Electromigration
Authors: Augur R.A. , Wolters R.A.M. , Schmidt W. , Kordić S. 
Published: April 2011

AbstractThis paper presents new results concerning diffusion at the interface between Al and its oxide, due to electromigration in Al interconnects. The results show that the phenomenon is an important and general one. Significant large-scale modification of the surface of Alalloy conductors was observed after electromigration stress under a wide range of different conditions: 1) in a number of different alloys (Al-Si, Al-Cu, Al-Si-V & Al-Si-V-Pd), 2) with and without passivation, 3) over an extended temperature range, 4) over an extended range of current density, and 5) with a number of different underlayers (SiO2, W-Ti (no vacuum-break before Al deposition) and W-Ti (oxidized surface before Al deposition)). After electromigration stressing, the surface showed height variations: at certain locations the original thickness remained, while at adjacent locations the thickness was reduced; as much as 150nm in 2500 hrs, for Al-Si on oxidized W-Ti metallization. Damage by thinning has received little attention in the past. Based on the results presented, a model for the underlying mechanism is proposed. In this model Al atoms diffuse concurrently along the interface between the Al-metal and its oxide, and through the grain boundaries, even at low stress conditions and in non-bamboo lines.
A Macroscopic Model of Electromigration: Comparison with Experiment
Authors: Kime Yolanda J. 
Published: April 2011

AbstractComparison of theory and experiment is critical in microelectronic reliability. In this work, a model which has been previously used for electromigration time to failure predictions (developed by Harrison) is extended to include predictions for numbers of voids and void sizes. Predictions from the model are compared to experimental measurements. The model makes reasonable predictions for mean lifetimes, numbers of voids, and void areas with very few free parameters. The model, however, does not adequately reproduce the range of lifetimes found in experiment.