bluuebunny/crossref_metadata_2025_split huggingface dataset:
Oxygen Ion Implantation into Germanium
Authors: Sjoreen T.P. , Ravindra N.M. , El-Ghor M.K. , Fathy D. 
Published: March 2011

AbstractSingle crystal (111) and (100) Ge wafers were implanted with 16O (180 keV, 2.0 x 1018/cm2, 14–28 ¼A/cm2 ) at substrate temperatures of 250, 330, and 500°C. Implanted samples were annealed at 350, 450, 550, and 650°C for 30–90 minutes in an Ar ambient. Rutherford backscattering channeling analysis and cross-sectional transmission electron microscopy indicate that an amorphous buried layer is formed by implantation and that the overlayer contains a dense network of precipitates. Electron spin resonance measurements indicate that the layer does not contain GeO2, but rather oxygen deficient GeO2. Annealing of samples up to 550°C showed no change in the morphology, however, after annealing at 650°C the buried layer was gone and all that remained was a damaged Ge substrate with little or no oxygen. Further annealing for 60 min left nearly virgin Ge.
Evidence for Oxygen Concentration Changes Induced by Low-Temperature 0–18 Implantation into a SIMOX Buried-Oxide Layer
Authors: Scanlon P.J. , Hemment P.L.F. , Robinson A.K. , Reeson K.J. , Chater R.J. , Kilner J.A. , Harbeke G. 
Published: March 2011

AbstractRBS, SIMS, and IR measurements have been made on a SIMOX wafer, implanted with a second, low-temperature oxygen implant. These measurements indicate changes in the oxygen/silicon ratio in the buried oxide layer and differences in the annealing behaviour of the original layer and the double implant layer.
High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
Authors: Jaussaud C. , Margail J. , Stoemenos J. , Bruel M. 
Published: March 2011

AbstractHigh temperature annealing of Simox wafers (T > 1300°C), has been proved to dramaticaly increase the quality of the SOI structure.The heat treatment leads to a redistribution of the implanted oxygen, opposite to its concentration profile, towards the buried layer.This paper describes from a thermodynamical point of view the SiO2 precipitates dissolution. The physical mechanisms of the oxygen migration are also discussed.
Soi Formation by a Line-Source Electron Beam and Electrical Characteristics
Authors: Hada H. , Okabayashi H. , Saito S. , Nakamura T. , Kawase Y. 
Published: March 2011

AbstractCrystal quality of SOI and electrical characteristics of p-MOSFETs fabricated in SOI films have been studied. The SOI recrystallization is done by a cw-operated, high-power, line-source and line-shaped electron beam annealing. Single crystal SOI strips, 15~20¼mxa few mm in sized, are formed with a good uniformity on a 4 inch diameter wafer by adopting the step and repeat system in the annealing apparatus. p-MOSFETs with ~90% field effect mobility of the bulk values are fabricated in the SOI films. The electrical characteristics of p-MOSFETs, fabricated in the SOI regions beyond the lateral seeding distance (~15¼m), are found to be independent of the low angle grain boundary density in the MOSFET channel, when the low angle grain boundaries extended toward the channel width direction.
SOI Structures Formed Using Line-Source Electron Beam Recrystallization
Authors: Moore Cameron A. , Meyer Jack D. , Fukumoto Jay T. , Szluk Nicholas J. , Thompson Lance R. , Knapp James A. , Collins George J. , Berkman Samuel 
Published: March 2011

AbstractRecrystallization of silicon-on-insulator (SOI) films using a line-source electron beam is described. This unique heat source can continuously emit several kilowatts of - 5 keV electrons into a beam 150 mm in length and - 2.5 mm in width, an exposure area which allows processing of 100 mm substrates in a single pass. An attractive aspect of this beam is the ability to control the beam profile, which in turn allows one to influence the thermal gradients present during recrystallization. Using a tightly focussed beam to recrystallize the SOI layer results in a film whose physical properties are generally attributed to films grown with a high thermal gradient at the solidifying liquid-solid interface (highly branched subboundaries with a maximum spacing of - 20 microns and several degrees of angular mismatch.) By reducing the gradient at the growth interface it is possible to achieve unbranched sub-boundaries with over 70 micron spacing and less than 0.5 degrees of out-of-plane tilt misalignment.
Large Diameter Soi Wafers by Zone-Melting-Recrystallization
Authors: Zavracky P. M. , Vu D. P. , Allen L. , Henderson W. , Guckel H. , Sniegowski J. J. , Ford T. P. , Fan J. C. C. 
Published: March 2011

AbstractA pilot production Zone-melting Recrystallization system was designed and built with a capability to handle 25 wafer batches of 4“, 5“and 6“wafers. The design addresses several production requirements including high throughput, batch processing and automation. Measurements on product wafers indicate that material quality was not sacrificed to achieve production throughput levels. Exceptional structural quality and good electrical properties have been obtained on SOI wafers produced within this system. Specifically, defect densities as low as 5 X 104 /cm2 a level an order of magnitude lower than previously reported, have been achieved while the minority carrier lifetime of up to 30 microseconds, intrinsic dopant level < 2 X 1015 /cm3 and junction leakage below 1 X 1016 amperes/cm2 are either as good as or better than previously reported values. We believe that defect free ZMR material will become a reality.
In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy
Authors: Cerullo M. , Phillips Julia M. , Anzlowar M. , Pfeiffer L. , Batstone J. L. , Galiano M. 
Published: March 2011

AbstractA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.
Ion Beam Deposition: Damage and Epitaxy
Authors: Armour D G 
Published: March 2011

AbstractThe bombardment of solid surfaces with ions in the energy range below about 150 eV, depending on the ion-substrate combination, results in a net growth of material on the surface. An ion beam facility capable of producing highly uniform, low energy beams of current densities in the range 10-1 to 1 Am-1 has been developed to study the potential of this growth technique for the fabrication of thin epitaxial films at low temperatures.The energy deposition associated with ion bombardment, which is considered to be responsible for the low temperature epitaxy capability, can also cause atomic displacements on the surface and near-surface regions of the substrate during initial growth and in the growing film. A study of the growth processes thus requires investigation of the damaging effects of low energy ion bombardment. In the present paper, fundamental aspects of the implantation and deposition of materials using very low energy ions will be discussed.
Performance Advantages of Submicron Silicon-On-Insulator Devices for ULSI
Authors: Sturm James C. 
Published: March 2011

AbstractIn this paper the various performance advantages of SOI and SOS structures for submicron ULSI circuits will be described. In addition to the traditional speed and radiation-hardness advantages, there are several significant advantages of thin-film SOI compared to bulk structures for the submicron scaling of MOS transistors. These advantages include short-channel threshold voltage stability, improved sub-threshold slope, increased saturation current, and reduced hot electron effects. Both theory and data from several groups will be presented to illustrate these effects. Since these advantages all fall in areas that are critical limits to device engineering and scaling in the submicron regime, the motivation for using SOI should be even stronger as devices are scaled to smaller dimensions in the future. Consideration of SOI or SOS on the ULSI scale will require a technology capable of low defect films with a film thickness of 1000 A or less, however.
The prospects for minority carrier devices such as bipolar transistors for BI-MOS will also be discussed. Both device structure (lateral vs. vertical) and material quality are issues that must be addressed.
Synthesis of Buried Silicon Compounds Using Ion Implantation
Authors: White Alice E. , Short K. T. , Dynes R. C. , Gibson J. M. , Hull R. 
Published: March 2011

AbstractIon implantation is widely used for doping semiconductors at low concentration, but, with the advent of a new generation of high current implanters, synthesizing new materials rather that simply doping them has become feasible. This technique has been successfully applied to fabricating silicon-on-insulator (SOI) structures with oxygen and nitrogen for several years. Since we are interested in understanding the mechanisms of formation of these layers, we have concentrated on sub-stoichiometric implantation doses of oxygen where it is easier to observe the coalescing layer. In order to determine whether this process of compound formation is more general, our studies were expanded to include implantation of the transition metals. Here, elevated substrate temperatures are necessary to minimize Si surface damage. The resulting disilicide layers are of remarkably high quality: they are single crystals in registry with the silicon wafer and they have better residual resistivities than comparable UHV-reacted suicides.
Substrate Annealing and the MBE Growth of Silicon on Sapphire.
Authors: Pellegrino Joe , Richmond Eliezer 
Published: March 2011

AbstractThe effect of predeposition substrate annealing has been investigated for MBE grown silicon films on sapphire substrates (SOS). Films of varying thickness were grown on substrates which had been annealed at either 1450°C or 900°C. The surface morphology and crystal1inity for each film were examined. The silicon thicknesses ranged from 65-400 angstroms and the anneal time for both temperatures was 30 minutes.The results indicate that the predeposition anneal of the sapphire substrate has a dramatic effect on the growth characteristics of the silicon film. The high temperature anneal promotes island growth of the silicon film which is easily resolved in the SEM. These islands are roughly 800 angstroms wide for a 65A thick film and grow to approximately 2200 angstroms for a 250A film. On the other hsuxi, the lower temperature anneal did not result in island formation, when examined by SEM, at any of the film thicknesses. In addition, X ray analysis reveals that the silicon layers for the high temperature anneal are epitaxial with a (100) orientation.
Buried Insulators and/or Conductors in Singles-Crystal Silicon Using Porous Silicon Techniques
Authors: Tsao Sylvia S. 
Published: March 2011

AbstractPorous silicon lends itself to a variety of applications due to its unique characteristics such as an interconnected pore network, large surface area, and dopant-dependent selectivity of formation. Although the best-known application of porous Si is for silicon-on-insulator (SOI) fabrication, the porous silicon technique also offers elegant approaches for silicon-on-conductor (SOC) fabrication.In this paper, we present an overview of porous Si techniques for both SOI and SOC applications. Possible limitations of the oxidized porous silicon process, for SOI in particular, are discussed. We also consider novel and multilayered structures which might be obtained using porous silicon.
Wafer Bonding for Soi
Authors: Maszara W.P. , Goetz G. , Caviglia T. , Cserhati A. , Johnson G. , McKitterick J.B. 
Published: March 2011

AbstractBonding of 3 and 4 in. oxidized silicon wafers was investigated for SOI applications. The bonding was achieved by using a surface treatment procedure compatible with VLSI processing and by heating in an inert atmosphere a pair of wafers which had been contacted face-to-face. A quantitative method for the evaluation of the surface energy of the bond based on crack propagation was developed. The bond strength was found to increase with the bonding temperature from about 60-85 erg/cm2 at room temperature to ⋍2200 erg/cm2 at 1405°C, in good agreement with the surface energy of bulk quartz. The strength was essentially independent of the bond time for up to 1100°C. Electrical properties of the wet-oxide-to-wet-oxide bond were tested using MOS capacitors. The results were consistent with a negative interface charge density of approximately 1011cm−2 at the bond. A double etch-back procedure was used to thin the device wafer to the desired thickness within *20 nm across a 3in. wafer. The density of threading dislocations in the remaining silicon layer was smaller than 103 cm−3, and the residual dopant concentration less than 5×l015cm−3, both remnants of the etchstop layer. A discussion of the bonding mechanism will be presented.
Cavity Formation in Simox Structures
Authors: El-Ghor M. K. , Pennycook S. J. , Sjoreen T. P. , White C. W. , Narayan J. 
Published: March 2011

AbstractWe have investigated the effect of different implantation parameters on cavity formation in the top Si layer in SIMOX structures. Cavities were found to occur in the temperature range between 600 and 675°C. The nucleation and growth kinetics of cavities could be reasonably explained using classical theory, and showed a behavior similar to that of irradiation-induced voids in metals. A similar dependence on instantaneous current and beam scanning frequency was also observed. Post implantation annealing at a temperature of 1150°C for 80 min showed cavities starting to facet, and a threading dislocation density of < 105 cm2. SIMOX structures formed in (111) silicon are also presented.
The Importance of Treating Electron-Electron Interactions in the Calculation of Dynamic Third-Order Polarizabilities for Linear Conjugated Polyenes
Authors: Pierce Brian M. 
Published: March 2011

ABSTRACTThe non-resonant electronic component of γ(-3ω ω, ω, ω) is calculated for ethylene, all-trans 1,3-butadiene, all-trans 1,3,5-hexatriene, and all-trans 1,3,5,7- octatetraene. The γ(-3ω; ω, ω, ω) is evaluated using the sum-over-states method and the all-valence-electron, semi-empirical INDO-SCF-MO procedure combined with single- and double-excitation configuration interaction (CI). The treatment of electron-electron interactions at the level of only single-excitation CI calculates negative values of γ(-3ω ω, ω, ω), which are in disagreement with measured positive values. The treatment of the interactions at the level of single- and double-excitation CI correctly calculates positive values for γ(-3ω ω, ω, ω). We conclude that the treatment of electron-electron interactions at least at the level of single- and double-excitation CI is needed to properly describe the dynamic thirdorder polarizabilities of linear conjugated polyenes, and related molecules with π-electron bonding networks.
Optimization of Second Order Nonlinear Optical Susceptibilities in Organic Materials
Authors: Katz H. E. , Dirk C. W. , Schilling M. L. , Singer K. D. , Sohn J. E. 
Published: March 2011

ABSTRACTMolecular second-order nonlinear optical susceptibilities (β) based on EFISH measurements in dimethylsulfoxide of selected donor-acceptor substituted organic compounds are reported. Enhanced values were noted for compounds containing highly ionizable substituents. Compounds possessing the highest susceptibilities were dissolved in polymer films and electric-field poled, leading to corresponding enhancements in the nonlinear optical coefficients. The data are consistent with molecular and thermodynamic models.
Theoretical Design of Polymeric Materials for Nonlinear Optics
Authors: Dory M. , Bodart V. P. , Delhalle J. , André J. M. , Brédas[a] J. L. 
Published: March 2011

ABSTRACTWe present results of ab initio calculations on the electric response of oligomers representative of conjugated polymers of interest. We mainly focus on : (i) polyacetylenes, polyynes, polydiacetylenes, and polycumulenes; (ii) polyaromatic systems in both undoped and doped states; and (iii) polyaromatic vinylene compounds. Our aim is to find trends among related series of conjugated polymers in order to assess their potentialities for nonlinear optics applications and to help in designing materials with optimal characteristics.
Nonlinear Optical Waveguides Containing A Transition Metal-Based Dye Molecule
Authors: Cahill Paul A. 
Published: March 2011

ABSTRACTTwo pentaammine malonitrile ruthenium dyes that show sharp and intense absorption maxima near 800 nm have been synthesized for use as nonlinear optical (NLO) dyes. Preliminary powder measurements of crystals of these dyes for second harmonic generation (SHG) are reported for incident 1064 nm light. The anomalous dispersion due to the location of the one-photon absorption maximum has interesting consequences for phase matching, and calculations for inherently phase-matched single-mode waveguides are presented.
Nonlinear Optical Properties of Chloronitroanilines
Authors: Gerbi D. J. , Boyd G. T. , Ender D. A. , Leung P. C. W. 
Published: March 2011

ABSTRACTA series of chloronitroaniline compounds were investigated as bulk crystals and in thin film form as potential nonlinear optical materials for use in electro-optic devices. Crystal structure determination and computational modelling were completed on 5- chloro-2-nitroaniline and electro-optic measurements were performed on crystals grown by physical vapor deposition. Second harmonic generation measurements were carried out on poled guest/host systems of 3-chloro-4-nitroaniline in poly(methylmethacrylate).
Strong Second Harmonic Generation in Poly(Oxyethylene)/p-Nitroaniline Complexes Crystallized under Electric Field.
Authors: Watanabe T. , Yoshinaga K. , Fichou D. , Chatani Y. , Miyata S. 
Published: March 2011

ABSTRACTMolecular doping of Poly(oxyethylene) by p-nitroaniline, followed by a crystallization under electric field, yields a material which exhibit strong second harmonic generation intensity such as 91 times that of urea.This strong activity arise from the new crystals possessing a noncentrosymmetric structure formed by the electric field crystallization.
Some Fundamental Aspects of the Thin Film Organization and Device – Structure Fabrication of Polydiacetylenes
Authors: Thakur M. , Verbeek B. , Chi G. C. , O'BRIEN K. J. 
Published: March 2011

ABSTRACTThe utility of the Shear method in obtaining thin single crystal films of polydiacetylenes has been demonstrated previously. In this paper the principles of the Shear method are elucidated with analogy to the well-known L-B method. Both the methods, L-B and Shear, utilize the polar molecular interactions with the substrates as a control parameter for the molecular organization. The major difference between the two is that one (L-B) utilizes a liquid as the subphase while the other (Shear) uses solid substrates. Because of the nature of the interface the L-B approach leads to only one-dimensional organization and poor optical quality for the films while the Shear method provides 3-D organization and excellent optical quality.Thin single crystal films of a specific polydiacetylene, PTS, are prepared on oxide coated silicon substrates by the Shear method. Waveguiding through the PTS films is demonstrated for the first time. Much progress is also made in the waveguide-structural fabrication of PTS films. The results are quite encouraging in terms of device applications of polydiacetylenes as optical switches and logic gates.
Nonlinear Organic Materials in Integrated Optics Structures
Authors: Stegeman G. I. , Zanoni R. , Seaton C. T. 
Published: March 2011

ABSTRACTNonlinear organic materials, in conjunction with integrated optics structures, can potentially be used to perform a variety of all-optical operations on subpicosecond time scales. A number of potential devices are described and the material properties necessary to implement them are summarized. Progress in our laboratory toward these goals is detailed.
Nonlinear Optical Properties of Polyenes: Electron Correlation and Chain Conformation
Authors: Garito A. F. , Heflin J. R. , Wong K. Y. , Zamani-Khamiri O. 
Published: March 2011

ABSTRACTUsing a recently developed many-electron theory of second and third order nonlinear optical susceptibilities, microscopic descriptions of γxxxx(-3ω;ω,ω,ω) are presented for two conformations of polyenes. The importance of electron correlations and the effects of variation in conformation and chain length are discussed.
Physiological Evaluation of Fluorocarbon Emulsions with Notes on F-Decalin and Pulmonary Inflation in the Rabbit
Authors: Clark Leland C. , Hoffmann Richard E. , Spokane Robert B. , Winston Pat E. 
Published: March 2011

AbstractContinuing refinement of fluorocarbon blood substitutes depends upon perfection and application of methods to monitor oxygen transport in living animals. Methods involving chronic catheterization, electrode implantation and tissue sampling yield valuable basic information in animal experiments. The importance of blood lactate in assessing the adequacy of fluorocarbon oxygen transport is reported here. The preliminary observation of microbubble blockade in the pulmonary capillaries in rabbits receiving F-decalin (PP5) emulsion, resulting in lungs which remain noncollapsible for at least 79 days is also reported.
Effects of a Perfluorochenical Emulsion on Propranolol Binding by Alpha-I-Acid Glycoprotein
Authors: Fan H. F. , Parsons D. L. 
Published: March 2011

AbstractThe binding of propranolol by a perfluorochemical emulsion (PFCE), cXiacid glycoprotein (AGP), and their mixtures was examined by a dialysis exchange method at 37°C. A sedimentation method was used to verify propranolol binding by the PFCE. Binding of 100 and 500 ng/ml drug by 100, 75, 50 and 25% v/v concentrations of the PFCE or of 0.067% AGP was determined. Propranolol was highly bound by the PFCE with a percent free propranolol in undiluted PFCE of 13.1% at both 100 and 500 ng/ml propranolol. Propranolol was moderately bound by AGP. The percent free propranolol in 0.067% AGP was 31.4% and 32.4% for 100 and 500 ng/ml propranolol, respectively. The percent bound propranolol was not significantly different when the emulsion was diluted to 75 and 50% v/v with 0.067% AGP solution rather than buffer. When the PFCE was further diluted to 25% v/v with the 0.067% AGP solution the percent free propranolol was significantly lower than in the 25% v/v PFCE alone or 75% v/v protein solution alone. Thus, the PFCE has a relatively large affinity and capacity for propranolol. Propranolol did not partition from buffer to the PFC liquid. This indicates that propranolol bound by the PFCE is associated only with the emulsifiers.
The Effect of Varying Percentages of Fluosol-Da Hemodilution on Antipyrine Metabolism in the Rat
Authors: Shrewsbury Robert P. , Oliver Sharon R. , Anderson Wanda T. , Lewis Lee M. , White Lisa G. 
Published: March 2011

AbstractAntipyrine disposition and metabolism in conscious, unrestrained Sprague-Dawley rats after 25% or 50% Fluosol hemodilution is reported. 25% hemodilution depressed antipyrine metabolism for 24 hours by primarily inhibiting cytochrome P-450. However, 50% hemodilution produced significant increases in the cytochrome P-450 activity after 48 hours. 25% hemodilution significantly reduced the antipyrine Vd at 0.5 and 72 hours. After 50% hemodilution, the Vd alternated between values greater and less than control throughout the 72hour study.