bluuebunny/crossref_metadata_2025_split huggingface dataset:
10.2: Electrofluidic Displays: Multi‐stability and Display Technology Progress
Authors: Dean Kenneth A. , Zhou Kaichang , Smith Steve , Brollier Brian , Atkuri Hari , Rudolph John , Yang Shu , Chevalliot Stephanie , Kreit Eric , Heikenfeld Jason 
Published: July 2011

AbstractElectrofluidic displays have been demonstrated with multi‐stable states that enable on, off, or grey‐scaled pixel states with zero holding power. We demonstrate operating principles and characterize optical, electrical and environmental performance. We also report other electrofluidic developments including device operation from − 30°C to 70 °C and 30 millisecond switching speeds at 25°C.
P‐9: Extended Fractional View Integral Imaging Using Slanted Fly's Eye Lens
Authors: Yanaka Kazuhisa , Uehira Kazutake 
Published: July 2011

AbstractA new 3D display system based on integral imaging technology was developed by combining two methods. One is the extended fractional view method in which various LCDs and fly's eye lenses can be used together, and the other is the slanted lens array method that can reduce the moiré pattern.
P‐201L: Late‐News Poster: A Large‐Sized Directional LED Backlight Unit with Hollow Cavity Light Guide
Authors: Kang Chih‐Chieh , Lin Jeng‐Feng , Li Hong‐Ze , Zeng Shi‐Hu 
Published: July 2011

AbstractAn innovative large‐sized directional LED backlight unit with hollow cavity light guide is devised for autostereoscopic 3D displays by implementing bilateral symmetry bumpy structures in bottom reflector. Simulation results demonstrate a good 3D BLU performance by accommodating only a 3D film as the top emission surface.
P‐11: Electrical Properties and Stability of Dual‐Gate Coplanar Homojunction Amorphous Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistor
Authors: Baek Gwanghyeon , Kuo Alex , Kanicki Jerzy , Abe Katsumi , Kumomi Hideya 
Published: July 2011

AbstractThe electrical characteristics and stabilities of dual‐gate (DG) coplanar homojunction amorphous indium‐gallium‐zinc‐oxide thin‐film transistors (a‐IGZO TFTs) are described. When the gate voltage is applied on top and bottom electrodes, the DG a‐IGZO TFT showed an excellent electrical performance with the sub‐threshold swing of 99 mV/dec, the mobility of 15.1 cm2/V·s and the on‐off ratio of 109. Under positive bias temperature stress, the device threshold voltage shifts about +4.5V after 10,000 seconds, while its shifts under negative bias temperature stress are very small. The effect of TFT illumination is also discussed.
P‐12: Novel Positive‐Intrinsic‐Oxide Semiconductor (P‐I‐OS) Photo Sensor for Flat Panel Displays
Authors: Lee Won‐Kyu , Oh Jae Hwan , Lee Dong Beom , Park Yongsung , Lee Yong Soo , Chang Young Jin , Jin Seong Hyun , Park Sehoon , Choi Min Hwan , Choi Jae Beom , Kim Hye Dong , Kim Sang Soo 
Published: July 2011

AbstractFor the first time, photo sensors employing p‐type Si and IGZO semiconductor (P‐I‐OS) have been fabricated with a sensor dimension of W/L = 1600/5. The IGZO layer was deposited using DC sputtering and replaces the conventional n+‐doped cathode electrode. The P‐I‐OS photo sensor is more sensitive to light with shorter wavelengths, and high to low photo‐current dynamic range is almost constant from −15V to −2.5V of anode bias. The P‐I‐OS photo sensor exhibits dynamic range of 53.3 dB under −5V of anode bias and 10,000 lx of illuminated light intensity
P‐13: A Full‐Swing a‐IGZO TFT‐Based Inverter with a Top Gate‐Induced Depletion Load
Authors: Choi Min Hyuk , Seok Man Ju , Mativenga Mallory , Geng Di , Kang Dong Han , Jang Jin 
Published: July 2011

AbstractA high performance amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT)‐based inverter is demonstrated using the dual gate TFT structure. The results indicate that the load of the inverter behaves like a depletion‐mode TFT when the top gate is under a positive bias. The proposed inverter shows much improved switching characteristics such as a wider swing range and higher noise margins, which are all achieved without the requirement of an additional process step to make the depletion load.
P‐14: High Performance Solution‐Processed IGZO TFTs Formed by Using a High‐Pressure Annealing Method
Authors: Rim You Seung , Kim Dong Lim , Jeong Woong Hee , Shin Hyun Soo , Kim Hyun Jae 
Published: July 2011

AbstractWe have developed a noble high‐pressure annealing (HPA) method for solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs). As the pressure increased, the electrical properties of solution‐processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal‐organic bonding and the density decrease of interface defect states between IGZO channel and SiO2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 °C, its channel mobility (μFEFE), threshold voltage (Vth), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm2/Vs, 2.47 V, 0.48 V/dec. and 7.5×106, respectively.
P‐16: Light‐Bias Induced Instability and Persistent Photoconductivity in In‐Zn‐O/Ga‐In‐Zn‐O Thin Film Transistors
Authors: Ghaffarzadeh Khashayar , Lee Sungsik , Nathan Arokia , Robertson John , Jeon Sanghun , Kim Sangwook , Kim Changjung , Chung U‐In , Lee Je‐Hun 
Published: July 2011

AbstractStress/recovery measurements demonstrate that even high‐performance passivated In‐Zn‐O/ Ga‐In‐Zn‐O thin film transistors with excellent in‐dark stability suffer from light‐bias induced threshold voltage shift (ΔVT) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n‐doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias.
P‐18: Integration of Surface State and Geometry Effects on High Performance Amorphous IGZO Thin‐Film Transistors
Authors: Liu Li‐Wei , Tsai Yun‐Chu , Liu Po‐Tsun , Shieh Han‐Ping D. 
Published: July 2011

AbstractThe influence of surface state effects of a‐IGZO TFTs is investigated and modeled by adopting two different structures. The inverted‐staggered TFTs with the less surface state effects show both improved sub‐threshold swing and stable performances compared to inverted‐coplanar TFTs. Based on our result, the inverted‐staggered structure is suitable as high‐performance a‐IGZO TFTs.
P‐23: The Contact Properties and TFT Structures of a‐IGZO TFTs Combined with Cu‐Mn Alloy Electrodes
Authors: Yun Pil Sang , Naito Mayumi , Kumagai Ryo , Sutou Yuji , Koike Junichi 
Published: July 2011

AbstractElectrical properties and microstructures were investigated between a‐IGZO and metal electrodes. We should use Cu‐Mn or Ti electrodes as the contact promoter and diffusion barrier. Ohmic behaviors were obtained with Cu‐Mn and Ti after annealing at 250 °C. TFT showed high performance with theses. This is due to reduced a‐IGZO and oxygen deficient region.
P‐25: A 2‐Inch AMOLED Display Using In‐Zn‐Oxide TFTs with Anodized Al2O3 Gate Insulator
Authors: Lan Linfeng , Xu Miao , Li Min , Xu Hua , Luo Dongxiang , Xu Ruixia , Zou Jianhua , Tao Hong , Peng Junbiao , Wang Lei 
Published: July 2011

AbstractAl2O3 prepared by anodization was employed for gate insulator of In‐Zn‐O TFTs. The field‐effect mobility, on/off current ratio, threshold voltage, and sub‐threshold swing are 14.6 cm2/Vs, 108, 1 V, and 0.28 V/decade, respectively. A 2‐inch AMOLED display driven by this kind of TFTs has been demonstrated.
10.4L: Late‐News Paper: Joule Heating Induced Lift‐off Technology for Large Area Flexible AMOLED Displays
Authors: Ko Moo‐Voon , Im Choong‐youl , Lee Iljeong , Lee Jong‐hyuk , Kim Sungchul , Hong Won‐Eui , Ro Jae‐Sang 
Published: July 2011

AbstractFor large area flexible active matrix organic light emitting diode AMOLED display, we have developed a novel lift off method. This novel technology named as Joule heating induced lift‐off JILO uses pulsed electric field for debonding of plastic and the substrate glass. We fabricated the low temperature poly silicon LTPS thin film transistors TFTs on the plastic film. Applying JILO, we can successfully develop flexible TFTs with no damage on transistor performance
P‐27: A Novel IGZO TFT Shift Register with Node‐Shared Structure
Authors: Kim Binn , Lee Yong‐Uk , Han Min‐Koo , Choi Seung Chan , Jang Yong Ho , Park Kwon‐shik , Kim Chang‐Dong 
Published: July 2011

AbstractWe propose and design a new depletion‐mode In‐Ga‐Zn‐O thin film transistors shift register by employing node‐shared structure. The proposed shift register requires 14 TFTs for 2 stages, while the previous shift registers were consisted of more than 20 TFTs for 2 stages. The SPICE simulation results have showed that the proposed shift register has successfully generated two output pulses in one stage.
P‐29: A Novel Six‐Mask Process for High Performance μc‐Si TFT Using Indirect Thermal Crystallization
Authors: Bae Jun Hyeon , Lee Hong Koo , Choi Byung Kook , Lee Sul , Kim Ki Tae , Kim Sung Ki , Park Kwon‐Shik , Bae Jong Uk , Kim Chang‐Dong , Jun Myung Chul 
Published: July 2011

AbstractIn this work, we have fabricated high performance μ c‐Si TFT using bottom gate 6‐mask process. IR laser diode was used for crystallization of a‐Si films. The gate pad (Mo) for TFT and gate bus line (Cu) were formed simultaneously by half tone mask technique. To solve the problem that the gate metal is damaged by heat during the laser thermal crystallization, Mo heat transition layer which acts as an IR absorption layer was patterned and the high reflective property of Cu within IR wavelength was also based on. Selective crystallization of a‐Si for gate damage free is absolutely needed in this work. We achieved high and stable device characteristics of which the mobility was more than 6.2cm2/V·s through this technique.
P‐30: Artificial Retina using Poly‐Si Thin‐Film Transistors driven by Wireless Power Supply
Authors: Kimura Mutsumi , Miura Yuta , Hachida Tomohisa 
Published: July 2011

AbstractWe have developed an artificial retina using poly‐Si thin‐film transistors driven by wireless power supply. It is found that the illumination profile can be correctly detected as the output voltage profile even if it is driven using unstable power source generated by inductive coupling, diode bridge, and Zener diodes. This means the feasibility to implant the artificial retina into human eyeballs.
P‐31: A New Driving Method for Data Line Reduction in WUXGA TFT‐LCD
Authors: Oh Jae Young , Shin Dong Su , Lee Jae Kyun , Shin Woo Sup , Jun Mike , Hwang Yong‐Ki 
Published: July 2011

AbstractIt is the important factor that data line reduction with high aperture ratio for low cost pane fabricatol. In the high resolution panel such as WUXGA (1920×RGB ×1200 pixels), it is hard to apply data D‐IC reduction (DDR) structure because of charging time insufficiency. In this paper, we have proposed a new driving method in WUXGA panel. This dual data and common (DDC) structure reduces D‐ICs by the reduction of data line 30% compared to conventional one. Transmittance ratio has been increased about 7% by using the DDC structure. The new structure was fabricated as same the normal 4mask amorphous silicon process with integrated gate driver (GIP). Through reliability test it showed same image quality compared to conventional one and we could verify new pixel panel's stability.
P‐32: Improving Reliability of IGZO TFTs via the Front‐channel and Back‐channel Protecting Layers Method
Authors: Chen Chung‐Tao , Chen Shin‐Shueh , Lin Wu‐Hsiung , Chen Po‐Hsueh 
Published: July 2011

AbstractThe front‐channel protecting layer has been reported to improve GI/IGZO interface and result in undamaged GI surface in coplanar bottom gate IGZO TFTs, and the proposed TFT structures with additional front and back channel protecting showed an effective improvement of Vth shift under both positive and negative gate‐bias stress. The mechanism of Vth shift under the stress has also been studied by this structure. Both front and back channel surfaces are significant. Damage and contamination of these surfaces lead to an increase of Vth instability.
P‐33: Impact of TiO2 Incorporation in the Structural and Electrical Property of the Sputtered Indium Tin Oxide Field Effect Transistors
Authors: Kim Ji‐In , Ji Kwang Hwan , Jeong Jae Kyeong , Yang Hoichang 
Published: July 2011

AbstractWe demonstrate that controlled cation composition in ITO‐based films combined with solid‐solution doping by titanium as well as the suppression of crystallization. The field‐effect transistor having 3.7at% Ti‐doped ITO film exhibited the high mobility of 13.4 cm2/Vs, low subthreshold gate swing of 0.25V/decade, and high Ion/off ratio of >108.
P‐35: The Effects of NiSi2 Seed Control on SGS Crystallization and TFT Characteristics
Authors: Chung Yun Mo , Lee Ki‐Yong , Seo Jinwook , Chung Minjae , Park Byoung Keon , Lee Donghyun , Kim Hye Dong , Kim Sang Soo 
Published: July 2011

AbstractTo improve TFT characteristics and reduce leakage current, we have investigated the precise control of NiSi2 seed shapes in a process called super grain silicon (SGS) crystallization. Excessive leakage current was reduced by the control of Ni in Si below ∼1013 atoms/cm2. Relatively higher SGS crystallinity of about 94% was obtained by inducing (111) NiSi2 seed to form a disc shape rather than that from a pyramid shaped seed with about 92%, resulting in more uniform TFT characteristics. Based on this seed control method, we fabricated a 14″ AMOLED TV having a pixel‐to‐pixel brightness uniformity of about 92%, which we believe is suitable for product acceptance.
11.1: Invited Paper: The World's First Blue Phase Liquid Crystal Display
Authors: Lee Hyeokjin , Park Hong‐Jo , Kwon Oh‐Jeong , Yun Sung Jae , Park Jae Hong , Hong Seungho , Shin Sung‐Tae 
Published: July 2011

AbstractRecently, the display of liquid crystal having the blue phase have been studied more intensively because it has many merits such as wide viewing angle without compensation films, very fast switching response time, and no need for the alignment layer and the rubbing process. First, we confirmed the feasibility of the blue phase liquid crystal display by means of polymer stabilization in the test cell. Even though we could get a wide temperature range that shows the blue phase, there were still problems such as the high operation voltage, hysteresis so on. In 2008, by developing and applying new technologies for improving these characteristics, we successfully fabricated a new kind of the liquid crystal display using the blue phase for the first time in the world.
P‐37: Artistic LED Crystal Illuminator with Fresnel Lens
Authors: Liu Kun‐Di , Chen Kuan‐Yu , Fang Po‐Sheng , Cheng Yao‐Chien , Wang Alex 
Published: July 2011

AbstractA compact Fresnel lens design, which gives artistic and contrasty projected crystal image, is presented. To design a crystal illuminator close to the crystal, one may choose LED second optics with high collimating ability (small beam angle) regardless the illuminance distribution. However, we found two sets of LED chip and second optics combination that deliver contrasty projected crystal images with different beam angle (defined by far‐field angular intensity distributions) with similar midfield illumination distributions. Therefore, illuminance distribution at various distances in midfield region should be emphasized and clarified in the LED second optics datasheet.
P‐39: Mobile Multifunctional System for Characterization of LC Cells and LC Materials
Authors: Valyukh Vladimir , Kozachenko Andriy , Valyukh Sergiy 
Published: July 2011

AbstractA compact measuring system for determination of electoro‐optical time resolved characteristics of LC cells, as well as optical retardation and twist angle, has been developed. Moreover, the system enables one to measure anchoring energy, elastic and dielectric constants of LC materials. Software of the system contains functions for simulation and optimization of LC devices.
P‐40: Suite Mobile: A Lab for Studying Mobile Displays in Motion
Authors: Wang Joel , Liu Peter , Cheng Wei‐Chung , Badano Aldo 
Published: July 2011

AbstractA controlled environment for studying the three major factors of perceived image quality of mobile displays—motion, ambient lighting and surround—consists of (1) A robotic arm was programmed to simulate the motion caused by the hand shake, (2) A set of RGB LED lights was used to simulate illuminants such as fluorescent lamps or daylight, and (3) A rear‐projection screen was used as the surround to simulate indoor or in‐car scenarios. In addition, a face tracking device was used to record the variation in viewing direction. Psychophysical experiments were conducted to test the spatial‐velocity thresholds and just‐noticeable differences of various combinations of ambient and surround lighting conditions.
P‐43: High‐Luminance Primary‐Color Display
Authors: Kim Moon‐Cheol , Kim Dae‐Yeon , Lee Iksoo , Koh Jaihyun , Kim Heendol , Ahn Kukhwan 
Published: July 2011

AbstractA new high luminance of primary color LCD display has been developed by using of a brighter BLU and color mapping algorithms. It is able to reproduce brighter colors than conventional displays so that live‐like scene reproduction of brighter illuminant colors is better reproduced. It may also be a one of a future solution to expand the color gamut in direction of brighter colors which is mostly limited in the conventional displays. Therefore, an ultimate xvYCC compatible display may be realized by this concept.
P‐44: Color Uniformity Grade Evaluation of Electronic Displays Based on Color Contrast Sensitivity
Authors: Asano Toshio , Takagi Yuji , Yao Jun , Liu Wei 
Published: July 2011

AbstractElectronic displays have non‐uniform regions of chromaticity. In the present paper, a novel method that evaluates the mura grade of electronic displays using a chromaticity mura index E is presented. The index E is calculated using a filtered image obtained by the color contrast sensitivity function.
P‐47: 3D Comfort and Fusion Limits: Subjective Results Versus Psychovisual Model Predictions
Authors: Deshpande Sachin 
Published: July 2011

AbstractWe define experiments to measure viewer comfort and 3D fusion as a function of 3D depth shift. We analyze the subjective results and find relation between the subjective results and psychovisual models. We relate subjects' viewer comfort with Percival's zone of comfort and subjects' fusion limit with Panum's fusion area.
P‐48: A New Approach Toward Visual Clarity Assessment Using Perceptual Contrast Length
Authors: Shin Miok , Chong Jong‐Ho , Yang Sun A. , Lee Eunjung , Lee Seung Bae , Berkeley Brian H. 
Published: July 2011

AbstractContrast ratio is one of the most important performance parameters used to evaluate visual clarity of displays. However, conventionally‐used absolute contrast ratio value has imperfect correlation to human perception of image quality. A new measurement method, called perceptual contrast length (PCL), is proposed as an improved standard for measuring contrast. Based on human perception tests under various conditions, PCL is shown to have higher correlation to human perception of image quality.
P‐50: Power Consumption Ameliorated for Integrated Gate Driver Circuit with Low Frequency Clock
Authors: Lin Chih‐Lung , Tu Chun‐Da , Hung Chia‐Che , Cheng Mao‐Hsun , Wu Chia‐En , Chen Yung‐Chih 
Published: July 2011

AbstractThis paper presents a novel low power consumption gate driver circuit with 12 TFTs and one capacitor which is made by hydrogenated amorphous silicon technology. The pull‐down structure can not only prevent the floating of gate lines, but also suppress the threshold voltage shift of a‐Si:H TFTs. According to the measurement results, the proposed gate driver circuit can be operated stably more than 10 days at high temperature (T = 100 °C). Furthermore, the power consumption of the proposed gate driver circuit can be reduced 52.6% compared to the previously proposed gate driver circuit.
P‐56: Design of Gate Integrated Circuit Using IGZO Thin Film Transistors for TFT‐LCD Panel
Authors: Jeon Sangjin , Ko Gwangbum , Chang Jongwoong , Hwang Samjin , Myoung Jaemin 
Published: July 2011

AbstractThis thesis deals with the method to improve the gate driver stability of large sized IGZO TFT panel. The proposed Gate driver circuit was designed for 26‐inch HD LCD Panel and the circuit has been designed considering the electrical characteristic of instability under the bias stress and temperature This circuit consists of twenty TFT using two clock signals such as CK1,CK2 (Von) and 1 power signals such as VSS (Voff), and new circuit with double inverter suppress the ripple occurrence for every time except actuating time that the signal of the gate line is revealed. By applying the proposed new circuit, the H‐SPICE simulation was performed. TFT in integrated circuit can be stable in the low frequency drive (48 Hz) althought ΔVth was 29 V and It could be applicable to the threshold frequency of 86 Hz in the high frequency operation without a problem.
P‐57: Local Dimming Algorithm to Minimize Maximum Luminance Reproductive Error
Authors: Nonaka Ryosuke , Sano Yuma , Baba Masahiro 
Published: July 2011

AbstractIn regard to local dimming LCD, we defined a new objective function to evaluate reproducibility both at higher and lower luminance based on human vision characteristics and optical characteristics of backlight and LCP. And we developed a local dimming algorithm that can combine higher luminance reproducibility and low power consumption.
P‐58: Resolution Evaluation of MPC Displays
Authors: Nakagawa Shinji , Yoshiyama Kazuyoshi , Furukawa Hiroyuki , Yoshida Yasuhiro , Imai Shigeki 
Published: July 2011

AbstractIn this paper, we evaluate the resolution characteristics of multi‐primary color (MPC) display systems. We have previously shown that the four primary color (4PC) displays increase effective resolution in the luminance domain to twice that of conventional RGB‐based displays with 4PC‐specialized sub‐pixel rendering we proposed. We improve this rendering method to allow apply five or more primary color systems and compare several rendering methods using the resolution characteristics of each display obtained by computational simulation.
P‐60: 3‐pair Intra‐panel Interface for 120Hz 3D Flat Panel Displays
Authors: Choe Won Jun , Kim Sang Soo 
Published: July 2011

AbstractA cost‐effective 3‐pair intra‐panel interface for flat panel displays is presented. By simply modifying the protocol of a conventional interface such as AiPi+, all video data from a TCON can be transferred to a column driver IC without any additional need to revise the interface physical layer. By adopting this interface, 64 wires are reduced to 48 wires for a 30‐bit color 120Hz 3D flat panel display device using 8 driver ICs.
P‐61: Grayscales by Cross Pairing of Select and Data Voltages in Liquid Crystal Displays
Authors: Ruckmongathan Temkar N. 
Published: July 2011

AbstractThousands of grayscales are displayed by cross pairing of a few select and data voltages in liquid crystal display. Simple drivers, low voltage operation, flicker free operation even at low refresh rates and good uniformity due to less distortion in addressing waveforms are the advantages of cross pairing.