bluuebunny/crossref_metadata_2025_split huggingface dataset:
Interpretation of Resistance Changes during Interconnect Reliability Testing
Authors: Sanchez John E. , Pham Van 
Published: April 2011

ABSTRACTAccelerated reliability testing of VLSI layered metallizations involves monitoring the resistance of interconnect test structures under the assumption that changes in the resistance are due to processes (i.e., damage) which are induced by the test conditions (current and/or temperature.) “Failure” of the interconnect is defined as a somewhat arbitrary increase in fractional resistance ΔR/Ro ≈ +10% to +30%, where Ro is the initial resistance. However interpretation of the measured ΔR/Ro (both positive and negative) is complicated by other processes, the test conditions, and the test structure itself which all contribute to ΔR/Ro. We estimate the magnitude of intrinsic factors, such as vacancies and solute effects, as well as extrinsic factors, such as interconnect strain and voiding, on measured on ΔR/Ro. We also show that localized joule heating at voids (a mixed intrinsic + extrinsic effect) principally accounts for the large ΔR/Ro measured during electromigration (i.e., high current) testing. These results suggest improved methods for the detection of interconnect voids induced by the stresses of passivation confinement. We outline the considerations which allow for more rigorous failure criteria which are scalable to any metallization layer scheme, interconnect length and test condition. Finally, we discuss the interpretation of resistance changes at interlevel via structures.
Effect of TiN ARC on Electromigration Performance of Tungsten Plug Via
Authors: Bui Nguyen D. , Pham Van H. , Forsythe D. David , Lee Raymond T. , Yue John T. 
Published: April 2011

ABSTRACTThe effect of TiN Anti-Reflective Coating (ARC) layer capping of metal, in a multilevel interconnect system, on the reliability of the tungsten (W) plug has been investigated. EM study on Kelvin via showed that the thin TiN ARC Kelvin via lifetime exhibited a reduction of one order of magnitude compared to that of the thicker ARC thickness (1000Å) when they were stressed in a certain direction. A new testing technique, used to investigate the effect of ARC thickness on the W-plug electromigration (EM) performance, is discussed. The simulation results of current distribution confirmed the proposed failure model of EM performance of W-plug via with different ARC thickness.
Fracture Strength of Thin Ceramic Membranes
Authors: Liddle J. Alexander , Huggins H.A. , Mulgrew P. , Harriott L.R. , Wade H.H. , Bolan K. 
Published: April 2011

ABSTRACTThe bulge test provides a convenient way to measure the mechanical properties, including fracture strength, of thin ceramic membranes. Thin (≈ 3000Å) films of non-stoichiometric SiNx, nominally defect-free and containing flaws introduced byfocused ion-beam machining, were examined. The use of such membranes in masks for projection electron-beam lithography systems makes it important to determine their ultimate strength and reliability. The mean fracture strength of the defect-free membranes was found to be 1.79±0.04GPa, and the Weibull modulus was estimated to be 49±15, giving a safe operating stress of 1.5GPa. The results of fracturing the samples containing flaws indicated that holes smaller than 15x0.5μm had no effect on the fracture strength of the membranes. By estimating the stress concentration factor for the slots, it was determined that the critical fracture stress was 16±3GPa.
Epitaxial CeO2 Growth on Si (111) for SOI
Authors: Tye L. , Chikyow T. , El-Masry N. A. , Bedair S. M. 
Published: April 2011

AbstractEpitaxial growth of CeO2 was obtained on the Si(111) surface by laser ablation in UHV atmosphere. However, a dual amorphous layer formed at the interface, yielding a CeO2/α:-CeOx/α-SiO2/Si(111) structure. This structure is speculated to be caused by a reaction occurring between Ce oxide and Si. Post annealing in O2 ambient caused the regrowth of CeO2, eliminated the α-CeOx layer, and increased the thickness of the SiO2 layer. The new CeO2/SiO2/Si(111) structure shows improved breakdown voltage and fewer interfacial states as observed by C-V and I-V measurements. The SiO2 is expected to tie surface states with Si, whereas the single crystal CeO2 will allow the epitaxial growth of lattice-matched Si on this insulating film. The effect of growth conditions and O2 annealing on both the structural and the electrical properties of this epitaxial oxide will be presented.
Effects of Deposition Parameters on the Structure, Morphology and Chemical Composition of PLZT Thin Films
Authors: Ribeiro R. M. , Gomes M. J. M. , Gomes E. De Matos , Ferreira J. A. , Mantas P. L. Q. , Baptista J. L. , Costa M. M. R. R. 
Published: April 2011

AbstractPLZT thin films from a stoichiometric (9/65/35) commercial target were laser deposited using the second and third harmonics of a nanosecond Nd:YAG laser. The films were grown on oriented sapphire substrates and analysed by X-ray diffraction, SEM and EDX techniques. The influence of the deposition parameters laser fluence and substrate temperature on the physical characteristics of the films is presented.
Positron Annihilation and X-Ray Photoelectron Spectroscopy Analyses of TiN/Si and TiN/SiO2/Si Films
Authors: Issar A. K. , Sharma S. C. , Chourasia A. R. , Chopra D. R. 
Published: April 2011

ABSTRACTWe have characterized TiN/Si and TiN/SiO2/Si structures by utilizing the variable energy positron beam spectroscopy (VEPBS) and x-ray photoelectron spectroscopy (XPS). Thin films of TiN were grown on SiO2/Si and Si by chemical vapor deposition and sputtering. Details of the electronic structure, microstructural defects, and interface are probed by implanting monoenergetic positrons at varying depths and analyzing the resulting positron-electron annihilation gamma rays. This analysis provides results for the positron diffusion length in different parts of the layered structure. Being sensitive to the presence of lattice defects, the positron diffusion length can be used to assess the quality of the film. The XPS measurements provide details about the elemental composition and interface in these materials.
Deposition of Oxide Based Advanced Electronic and Optical Materials by Rapid Isothermal Processing (RIP) Assisted Metalorganic Chemical Vapor Deposition (MOCVD)
Authors: Mavoori J. , Singh R. , Sharangpani R. , Gong C. , Poole K. F. , Singh R. K. , Natarajan R. 
Published: April 2011

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) is an ideal technique for the deposition of conducting and non-conducting oxide based thin film materials. In this paper we present our study of RIP assisted MOCVD for the low temperature deposition of a number of oxide based advanced materials which are useful for the development of the next generation of microelectronic and optoelectronic devices. We have designed several experiments to understand the role of photoeffects in RIP assisted MOCVD. The vacuum ultraviolet, ultraviolet and visible (λ ≤ 0.7–0.8μm) photons can have several beneficial effects including the enhancement of the surface reactions of the absorbed molecules through the perturbation of the electronic state of binding between the absorbed molecules and the solid surface. We have shown a direct relationship between the structural and electrical characteristics of the deposited oxide and the spectral contents of the energy source.
The High Dispersion of CuCl2in ZSM-5 by Using Microwave Method
Authors: Xiao Feng-Shou , Xu Wenguo , Qru Shilun , Xu Ruren 
Published: April 2011

AbstractThree preparation methods of ZSM-5 supported copper were studied. The first sample is the mechanical mixture of CuCl2·2H2O with NaZSM-5 (Cu+ZSM-5), the second sample is the mechanical mixture of CuCl2·2H2O with NaZSM-5 followed by microwave treatment (Cu/ZSM-5), and the third sample is copper ion exchanged with NaZSM-5 (CuZSM-5). All the samples were characterized by XRD, DTA, and n-hexane adsorption. Cu+ZSM-5 samples showed characteristic XRD peaks of both NaZSM-5 and CuCl2·2H2O and Cu/ZSM-5 samples showed only NaZSM-5 XRD peaks; these results suggest that CuCl2·2H2O no longer exists in the crystalline state in Cu/ZSM-5 samples, possibly in a highly dispersed state. DTA experiments showed that Cu+ZSM-5 samples did exhibit the melting point of CuCl2and Cu/ZSM-5 did not. Furthermore, as compared with Cu+ZSM-5 and CuZSM-5, the n-hexane adsorption on Cu/ZSM-5 samples require higher n-hexane pressure to reach the saturated adsorption; these results suggest that the copper salt has entered the zeolite channels during microwave treatment, resulting in the change of channel circumstance for ZSM-5 zeolite. All these results suggest that microwave technique is a potential method for preparing highly dispersed metal salts in the channels or cages of zeolites.
PFC Concentration and Recycle
Authors: Tom Glenn M. , McManus James , Knolle William , Stoll Ilse 
Published: April 2011

AbstractThe semiconductor industry uses PFC gases such as CF4 and C2F6 as etchant and cleaning gases during plasma processes. The gases do not fully react within the reactor chamber. The unused gases enter the atmosphere through the process effluent. These gases have long persistence in the atmosphere and absorb infrared radiation. The PFC gases are, therefore, potential global warming gases. A method is described that will recover and recycle PFC gases.
Advanced Ceramics for Environmental Protection
Authors: Chambers Jeffrey A. 
Published: April 2011

AbstractAdvanced ceramic materials offer significant thermodynamic efficiency advantages over metals and alloys because of their higher use temperatures. Using ceramic components results in higher temperature industrial processes which convert fuels to energy more efficiently, reducing environmental emissions. Ceramics have always offered high temperature strength and superior corrosion and erosion resistance. However, brittleness, poor thermal shock resistance and catastrophic failure have slowed industrial adoptions of ceramics in environmental applications.This paper will focus on environmental applications of three new advanced ceramic materials that are overcoming these barriers to industrial utilization through improved toughness, reliability, and thermal shock performance. PRD-66, a layered oxide ceramic with outstanding thermal shock resistance and high use temperature with utility in catalyst support, insulation, and hot gas filtration applications, is discussed. Tough silicon carbide fiber reinforced silicon carbide (SiC/SiC) and carbon fiber reinforced silicon carbide (C/SiC) ceramic composites made by chemical vapor infiltration, and silicon carbide particulate reinforced alumina (SiCp/A12O3) composites made through Lanxide Corporation's DIMOX™ directed metal oxidation process are described. Applications of these materials to pollution reduction and energy efficiency in medical and municipal waste incineration, heat management, aluminum remelting, pyrolysis, coal combustion and gasification, catalytic pollution control, and hot gas filtration, will be discussed.
Kinetic Study For The Formation Of The Oxygendeficient Magnetite
Authors: Togawa T. , Wada Y. , Yoshida T. , Tsuji M. , Tamaura Y. 
Published: April 2011

AbstractAn oxygendeficient magnetite (Fe3O4–8) has been found to exist in the range of (0<Δ<0.12) in the course of H2-reduction of magnetite to αFe at 300°C. The formation of the oxygendeficient magnetite was studied kinetically. In the temperature range of 250 350°C, the rate constants, k1, and k2, were determined for the forward and reverse reactions, respectively. The rate of formation of the oxygendeficient magnetite depended on the partial pressure of H2 gas. The rate constant, k1, was 109.58 at 300°C and the reaction order was 1.11 with respect to the partial pressure of H2 gas. The rate of reverse reaction depended on the partial pressure H2O gas and the oxygen deficiency of magnetite, Δ. The rate constant of the reverse reaction, k2, was 10−2.54 at 300°C, and the reaction orders were 0.45 and 0.99 with respect to the partial pressure of H2O gas and the Δ value respectively. The activation energies for the forward and reverse reactions were determined to be 63.8 kJ.mol−1 and 25.5 kJ.mol−1 from the Arrhenius' equation.
New Generation Reaction Of H2 From H2O With Carbon-Bearing Ferrites At 300 °C
Authors: Hasegawa Noriko , Akanuma Kazuhiro , Sano Taizo , Tsuji Masamichi , Tamaura Yutaka 
Published: April 2011

AbstractThe carbon-bearing magnetite (CBM) was prepared by the carbon-deposition on the H2- treated magnetite with CO2 at 300 °C. The CBM reacted with H2O and evolved H2 gas at 300- 350 °C. The surface of the CBM was composed of a new iron(II)oxide / carbon layer (CIOlayer). X-ray diffractometry and chemical analysis showed that the CIOlayer was transformed to an amorphous carbide phase by allowing to stand in Ar stream at 300 °C, which is so reactive as to decompose H2O into H2. The mole ratio of the evolved H2 gas to the evolved CO2 was nearly equal to that in the carbide (Fe3C) decomposition reaction with H2O. During the H2O decomposition, oxygen ions are transferred to the surface layer forming iron oxide. When the carbon-bearing Ni(II)-ferrite (CBNF) was used as the solid phase, the hydrogen evolution reaction takes place without decreasing in the carbon content in the CBNF, and the evolved H2 volume was approximately 8 times higher than that evaluated from the oxidized amount of the iron ions in the CBNF. This result suggests that some amount of oxygen in the CBNF is released while allowing to stand the sample in Ar stream at 300 °C. These H2 evolution reactions can proceed at low temperature of around 300 °C. This will provide us the way to establish a unique chemical heat pump system, where the waste heat around 300 °C be transferred to chemical energy of H2. The surface layer composed of iron(II) oxide/carbon is the key compound for this reaction.
Catalytic Conversion of CCl2F2 on γ-A12O3 Catalyst Systems
Authors: Bell T. N. , Kirszensztejnt P. , Czajkat B. 
Published: April 2011

AbstractThe reaction of CC12F2 (CFC 12) has been studied on a γ- A12O3 catalyst with and,withoutH2 and with H2 on a Pt/γ-A12O3 catalyst containing 0.5, 2 and 5 wt % of Pt at a temperature of 300°C. The extent of conversion, was shown to be highly dependent both on the metal coverage; and on the temperature.
Preparation and Properties of
Poly(Phenyleneterephthalamide)-Silica Ceramers With Interphase Bonding From
Aminophenyltrimethoxysilane
Authors: Ahmad Z. , Wang S. , Mark J. E. 
Published: April 2011

ABSTRACTPoly(phenyleneterephthalamide) chains having carbonyl chloride end groups
were prepared by reacting a mixture of m- and
p--phenylene diamines with terephthaloyl chloride, and
were then end-capped with aminophenyl-trimethoxysilane. The polymer thus
prepared was used to synthesize a hybrid material in which it was chemically
bonded to a silica network produced in-situ by hydrolyzing
tetramethoxysilane. Films prepared from this hybrid material were yellow but
transparent, and quite tough. The transparency of the films and their
mechanical strength were considerably improved relative to the corresponding
systems in which the inorganic network was not bonded to the organic phase.
Tensile strength was found to increase initially with addition of silica but
then to decrease rapidly with further additions. Elongation at rupture also
decreased after an initial small increase. A systematic increase in the
tensile modulus and hardness with increase in the silica content and a
decrease in water absorption were also observed. SEM analysis showed that
the silica particle size depends on the silica content, and was 0.5 μm or
less. These transparent ceramers were found to withstand tensile stresses
the order of 175 MPa and had thermal decomposition temperatures around 460 -
475 ° C, and could thus be very useful in engineering applications at high
temperatures.
Electron Spin Resonance (Esr) Study of VO2+ Doped
Germanium Dioxide Synthesized Via the Sol-Gel Process
Authors: Mendez-Vivar Juan , Arroyo R. 
Published: April 2011

ABSTRACTVOSO4.3H2O was used as doping agent to prepare
GeO2 xerogels, via the sol-gel process. Samples were analyzed
by Thermal Gravimetric Analysis (TGA), Differential Thermal Analysis, (DTA),
Diffuse reflectance (UV-Vis) spectroscopy and electron spin resonance (ESR).
Study of thermally treated samples was done. VO2+ were found in
V2O5 at 350 °C. VO2+ ions were
incorporated to the GeO2 network after thermal treatment at 700
°C. From the results we propose that VO2+ acts as crystal former
in these samples.
Wet-Chemical Processing of Tin-Doped Indium Oxide
Layers
Authors: Van Bommel Mark J. , Bernards Tom N.M. , Talen Wim 
Published: April 2011

ABSTRACTFor industrial applications the wet-chemical deposition of tin-doped indium
oxide (ITO) layers would be favourable, especially at low temperatures.It is shown that conductive transparent films can be made by spinning
solutions which contain alkoxide precursors of indium and tin. The
hydrolysis conditions of these alkoxides are varied using different water to
indiumalkoxide ratios and different hydrolysis times. It is shown that when
processed at low temperatures, the hydrolysis of these alkoxides has a
severe influence on the electrical properties of the layers. A decrease in
resistance as a function of time is observed for ITO layers which are stored
at room temperature in an ambient atmosphere. Annealing at 350°C in forming
gas further reduces the resistance of the ITO layers.
Doped Silicon Carbonitride: Synthesis, Characterization and
Properties
Authors: Bill J. , Friess M. , Aldinger F. , Riedel R. 
Published: April 2011

ABSTRACTWe report on an alternative route to quaternary ceramics which can be
prepared by polycocondensation of commercially available polysilazanes with
the appropriate alkyl amides (M(NRR')X with M = B or P and
subsequent pyrolysis in argon atmosphere at 1000°C. Ceramic monoliths are
obtained if the modified polysilazane is crosslinked at 400°C for 3 h. After
ball-milling, sieving and cold isostatic pressing the green body is directly
pyrolysed to the appropriate monolith. The obtained material is amorphous to
X-ray-diffraction. Investigations by electron spectroscopie imaging (ESI) in
TEM indicate a homogeneous distribution of the elements M, Si, C and N (M =
B, P) within a resolution of 2 nm. Upon annealing at elevated tempertures in
a nitrogen atmosphere crystallization of the appropriate thermodynamically
stable phases occurs around 1400°C yielding a micro/nano-, nano/nano- or
micro/microcrystalline microstructure with design-tailored properties
depending on the element M.
Polymer-Derived Micro-Nano-Structured Si3N4/SiC-CompositeS
Authors: Greiner Axel , Bill Joachim , Riedel Ralf 
Published: April 2011

ABSTRACTMicro-nano-structured Si3N4/SiC-composites were prepared by liquid phase sintering of either amorphous, polymer derived Si-C-N powder or SiC1+xcoated OC-Si3N4 powder, followed by gas pressure sintering. The obtained microstructures were investigated by scanning and transmission electron microscopy (SEM, TEM). Nanosized SiC inclusions embedded in microcrystalline Si3N4 grains were analysed by elemental mapping with electron spectroscopie imaging (ESI).
Studies on SiBN(C)-ceramics: Oxidation- and Crystallization
Behavior Lead the Way to Applications
Authors: Baldus H.-P. , Passing G. 
Published: April 2011

ABSTRACTThe thermal stability of amorphous borosilicon nitride
(Si3B3N7) and borosilicon carbonitride
(SiBN3C) between 1000°C and 2000oC both in air and
under inert conditions is reported. Both materials are derived from
polymerization and subsequent pyrolysis of a “single source” precursor. On
heating in vacuum or nitrogen SiBN3C remains amorphous up to lCWC
whereas Si3B3N7 crystallizes at about
1800°C under these conditions. At about 2000^ the SiBN(C)-materials
decompose into SiC, BN, B4C and N2.Oxidation studies performed by TEM- and SEM-investigations of oxidized
borosilicon carbonitride grains reveal that an interlayer consisting of B,
N, and only little O is formed between the oxide scale on the surface and
the inner bulk material. The interlayer does not disappear at temperatures
above 1450°C in contrast to the Si2N20-interiayer
observed on oxidized silicon nitride. The oxidation kinetics of the new
ceramics are established in the range from 1000°C to 1600°C indicating a
very high oxidation resistance. Possible applications as matrix materials as
well as materials for fibers and coatings are discussed.
Preparation Of Pt/Al2O3 Catalysts By
Sol-Gel Process And Its Application To Uranyl Ion Reduction
Authors: Deptuia A. , Łada W. , Olczak T. , Di Bartolomeo A. 
Published: April 2011

ABSTRACTVarious kinds of active alumina supports were obtained in the following
steps: (1) preparation of alumina sols by extraction of nitrates with
Primene JMT from aluminium nitrate solution, (2) gelation to spherical
particles (with diameter < 100 μm) by extraction of water from sol
emulsion in 2-ethyl -1-hexanol, (3) sometimes conversion of NO3− stabilized gel to OH− form by reaction with ammonia,
(4) calcination of gels to γ-Al2O3 with specific
surface area >100 m2/g at 500°C . The powders were then
impregnated with chloroplatinic acid and recalcined at 500°C. Catalysts were
also prepared by direct gelation of alumina sol containing hydroplatinic
acid followed by steps (3) and (4). Pt/Al2O3 catalysts
were used for reduction of 1M UO2(NO3-0.5M HCOOH
solution with hydrogen at atmospheric pressure. The course of the reduction
was controlled analytically and by measuring the U(VI)/U(IV) redox
potential. It was concluded that the catalysts obtained by impregnation of
supports prepared from nitrate stabilized gels exhibit the best activity and
stability.
Preparation and Processing of Monodisperse Colloidal
Silica-Cadmium sulfide nanocomposites
Authors: Chang Song-Yuan , Liu Lei , Asher Sanford A. 
Published: April 2011

ABSTRACTA novel synthetic methodology has been developed for preparing monodisperse
colloidal silica-cadmium sulfide nanocomposite spheres in the 50 – 300 nm
size regime. This methodology uses water-in-oil microemulsions as the
reaction medium. Monosize silica colloids are first produced by the
controlled hydrolysis of tetraethyl orthosilicate in the micro water
droplets of the microemulsion. Cadmium sulfide quantum dots are incorporated
into the silica colloids during synthesis by the introductions of
Cd2+ and S2- microemulsions. Various morphologies
of the nanocomposite are fabricated by controlling the heterogeneous
coagulation of CdS and SiO2. Unique high surface area silica
particles can be prepared when nitric acid etches out the CdS and leaves
behind topologically defined voids. The CdS nanocomposites are new materials
useful for non-linear optics, while the high surface area silica particles
should have novel applications in areas such as catalysis.
Self-Connected Cds Nanocrystals as Precursors for Anisotropic
Semiconducting Films
Authors: Chemseddine A. 
Published: April 2011

ABSTRACTMonosized and anisotropically capped CdS nanocrystals have the property to
self-connect into a polymeric material. The viscosity of this fibrous
material can be adjusted to fabricate texturized and homogeneous coatings.
These films can be thermally converted into pure CdS films. Based on the
size dependent band gap of this semiconductor, the absorbance of the film
can be fine-tuned through the size of the particle-precursor or by
controlling the film heat treatment. The evolution of the film nanostructure
with temperature was investigated by optical absorption, DTA, SEM and X-ray
diffraction techniques.