bluuebunny/crossref_metadata_2025_split huggingface dataset:
HVEM and Electrical Characterisation of SIMOX Structures
Authors: De Veirman A. , Yallup K. , Van Landuyt J. , Maes H.E. , De Meyer K. , Dupas L. 
Published: March 2011

AbstractThis paper reports on a study of the Silicon-On-Insulator (SOI) structures obtained by oxygen ion implantation (SIMOX) and subsequent thermal annealing. With Transmission Electron Microscopy (TEM) a novel defect structure is revealed in the case of low temperature annealings. Electrical measurements of test devices are performed and a correlation with impurity decoration of defects is investigated.
Monitoring SIMOX Layer Properties and Implantation Temperature by Optical Measurements
Authors: Harbeke Guenther , Steigmeier E.F. , Hemment Peter L.F. , Reeson Karen J. , Jastrzebski Lubek 
Published: March 2011

AbstractInfrared absorption and Raman scattering measurements of SIMOX structures implanted at various temperatures yield information on the structure and the strain in both the top silicon and the buried oxide layers. Both techniques can also be used to monitor the implant temperature after the implantation.
Contamination Control in SIMOX Implanters
Authors: Cordts Bernhard , Guerra Michael 
Published: March 2011

AbstractThe Semiconductor Equipment Division of Eaton has, for the past year, supplied Simox wafers to various companies and laboratories throughout the world. A review will be presented of the operation in a production mode of the NV-200 Oxygen Implanter. Improvements in the production version will be related to both particulate counts and elemental contamination on the wafers. The addition of a polysilicon liner in the beamline has greatly reduced the heavy metal and carbon contamination levels in the machine. Historical Sims and Auger data will be presented to show these effects. The most recent production machine is operating on the manufacturing floor. Sims data from wafers implanted in October 1987 will be presented.
Liquid-Solid Interface Morphologies and Defect Structures in Zone-Melting-Recrystallized Silicon-On-Insulator Films
Authors: Im J. S. , Chen C. K. , Thompson C. V. , Geis M. W. , Tomita H. 
Published: March 2011

AbstractIn-situ optical microscopy has been used to observe liquid-solid interface morphologies during zone-melting recrystallization of silicon-on-insulator films. These morphologies have been correlated with the defect morphologies of the recrystallized films. Stable cellular solidification fronts, which are obtained at low zone velocities if the radiation intensity gradient in the interfacial region is small, yield subboundary free films. We suggest that under these experimental conditions the interface morphology is primarily the result of radiative heating rather than constitutional supercooling.
Improvements in Zone Melt Recrystallized Soi Layers by the Use of Selective Epitaxial Growth in the Seed Windows.
Authors: Williams D.A. , McMahon R.A. , Ahmed H. , Karapiperis L. , Garry G. , Dieumegard D. , Barfoot K.M. , Godfrey D.J. 
Published: March 2011

AbstractThe effect of selective epitaxial growth (SEG) of silicon in the seed windows of silicon on insulator structures prior to recrystallization has been investigated. Subsequent zone melt recrystallization of these structures was performed in a dual electron beam system, and it was found that the full planarisation of the deposited silicon layer results in uniform film thickness after recrystallization. Cross sectional scanning and transmission electron microscopy, optical microscopy after defect etching, and bevelling are used to analyse the material. The SEG method improves the uniformity of the film for device island etching, and so is useful for all silicon on insulator applications, although the one of most interest for these investigations is the production of three dimensional circuitry. This is achieved by stacking layers of devices, and so planarity is particularly important.
Cold Cathode Electron Beam Recrystallization of Soi Films
Authors: Thompson L. R. , Knapp J. A. , Moore C. A. , Collins G. J. 
Published: March 2011

AbstractA cold cathode line source electron beam system for forming SOI films by zone melt recrystallization is described. Possible advantages gained from using a cold cathode electron beam include the controllability of the beam profile and power level, as well as straight-forward scaling to recrystallization of 6 or 8 inch wafers. A computer-based melt width control procedure incorporating feedback to the line intensity from optical observation of the molten zone is also described. This technique allows direct control and adjustment of the melt zone over widths typically from 1 to 3 mm.
Selective Epitaxial Growth Followed by in Situ Deposition of a- or Poly-Si for Seeded Soi.
Authors: Karapiperis L. , Garry G. , Dieumegard D. 
Published: March 2011

AbstractSelective Epitaxial Growth (SEG) techniques find a growing number of applications in the field of Si IC's, such as, lateral isolation, vertical interconnects, seeded recrystallisation etc. In the present work, the use of Si SEG by CVD combined with in-situ deposition of a- or poly-Si for the improvement of SOI obtained by Zone Melting Recrystallisation (ZMR) or by Lateral Solid Phase Epitaxy (SPE) is described. The principle application for which the present work is intended is Three Dimentional (3D) Integration. One of the main constraints imposed on process is thermal compatibility with previously executed process steps. Hence the need to reduce the thermal budget for the Selective Epitaxial Growth as much as possible.
Buried Silicide Synthesis and Strain in Cobalt-Implanted Silicon
Authors: Barbour J.C. , Picraux S.T. , Doyle B.L. 
Published: March 2011

AbstractSilicon (001) substrates were implanted with 350 keV co at room temperature and 450°C with fluence of from 1x1017 Co/cm2 to 6x10 Co/cm2. All samples were annealed at 1000°C in order to form the CoSi2 phase. Concentration profiles were determined with Rutherford backscattering spectrometry (RBS), and the associated strain profiles were analyzed with double-crystal X-ray rocking curve measurements. Ion channeling was also used to characterize.the suicide formation and crystal quality. An implantation of 6x1017 Co/cm2 at 450°C forms a single-crystal CoSi2 layer while lower fluences do not. A continuous, buried CoSi2 single-crystal layer is formed for the 3x1017 Co/cm2 sample implanted at 450°C and annealed at 1000°C. The continous CoSi2 layer is thicker than the critical layer thickness for a fully coherent film, and therefore the layer partially relaxes. A relaxation of 50% of the fully coherent value is observed for this buried suicide system.
Nisi2-Formation By 6 Mev High Dose Nickel Implantation Into Silicon
Authors: Lindner J.K.N. , Kaat E.H.Te 
Published: March 2011

AbstractDeep buried metallic layers are formed by 6 MeV high dose Ni implantation into Si at 450 K. The layers have been characterized by optical reflectivity and spreading resistance depth profiling as well as TEM and XTEM. They consist of epitaxially grown NiSi2 crystallites of both type-A and type-B orientations and thin NiSi2-platelets on {111} lattice planes. Investigations indicate the suppression of amorphization by Ni as well as damage gettering of Ni atoms.
Trade-Offs For RAD-Hard Soi Structures
Authors: Davis G. E. 
Published: March 2011

AbstractTotal dose, dose rate, transient, single event upset and neutron radiation effects for dielectrically isolated MOS devices on S01(silicon-on-insulator) substrates are discussed. For large-scale, high-speed circuits, material, layout and process characteristics optimized for high circuit yield and reliability may conflict with improvements required to extend radiation thresholds. Some radiation hardening techniques applicable to silicon-on-insulator high speed thin film MOS devices are presented.
Electrical Evaluation of Simox Material and Integrated Devices
Authors: Cristoloveanu Sorin 
Published: March 2011

AbstractAdequate techniques for the electrical characterization of SOI structures are reviewed and applied to reveal a coherent image of SIMOX material. Sheet resistance, low temperature Hall effect and photoconductivity measurements are analysed with respect to the processing conditions. Depth profiles are identified by spreading resistance, MOS-Hall devices and differential ellipsometry. After annealing at high temperature the activation of thermal donors, not new donors, is attenuated. The properties of front and buried interfaces are compared with each other and referred to implantation and annealing conditions. The measurements of the dynamic transconductance, charge pumping current and noise in MOSFET's are shown to provide easier and more relevant evaluation than conventional MOS capacitance techniques. The minority carrier generation is studied by separating the contributions of the volume, interfaces and sidewalk. Not only is the performance of transistors fabricated on SIMOX excellent, but additional gain is possible using the new concept of volume inversion.
A High Performance Submicrometer CMOS/SOI Technology Using Ultrathin Silicon Films on Simox
Authors: Vasudev P.K. , Terrill K.W. , Seymour S. 
Published: March 2011

AbstractThe use of ultrathin SIMOX wafers for fabricating submicrometer CMOS integrated circuits is described. It is demonstrated from ring oscillator speeds that properly designed devices can exhibit very high transconductance and performance superior to circuits using bulk Si.
The Structure of Silicon Thin Films Grown on Sapphire by MBE
Authors: Twigg M. E. , Pellegrino J. G. , Richmond E. D. 
Published: March 2011

AbstractFrom a series of imaging experiments performed in the transmission electron microscope (TEM), it is apparent that for silicon grown on sapphire (SOS) by molecular beam epitaxy (MBE), silicon thin film growth on the (1012) sapphire plane resembles that observed for analogous films grown by chemical vapor deposition (CVD). At 900°C very thin (150A) silicon films grow as islands with either the (001) or (110) planes parallel to the (1012) plane; it is also found that most of the silicon grows as (001) rather than (110) islands, as is true for CVD-grown SOS. The orientation, however, of (110) islands occuring in this MBE-grown SOS sample differs from that of (110) islands occuring in CVD-grown SOS. By following this initial 150A of growth with 2500A of silicon deposited at. 750°C, a continuous (001) film was grown in which microtwins appear to be the predominant defect. The MBE-grown SOS also resembles that grown by CVD in that the microtwin densities associated with the “majority” and “minority” twinning systems are influenced by the orientation of the sapphire substrate.
Low Dislocation Soi by Oxygen Implantation
Authors: Van Ommen A.H. 
Published: March 2011

AbstractRecent results on silicon on insulator structures formed by implantation of oxygen and subsequent high temperature annealing will be discussed. The resulting silicon on insulator structure has sharp interfaces and a dislocation density of less than 105 cm -2 in the top silicon film. This density of defects is several orders of magnitude lower than previously reported values. The relation between the microstructure after implantation and this relatively low defect density will be discussed. Silicon point defects will be shown to play an important role in the establishment of the microstructure during implantation. Relations between implantation conditions, point defect concentrations and microstructure will be discussed to come to the formulation of the boundary conditions for the formation of high quality silicon on insulator material by this method.
Microstructural Characterization of Porous Silicon SOI Structures
Authors: L'ecuyer J.D. , Loretto M.H. , Farr J.P.G. , Keen J.M. , Castledine J.G. , L'esperance G. 
Published: March 2011

AbstractSOI structures up to 60nm wide have been produced using oxidized porous silicon formed by selective n/n+ anodizing. The microstructures of the islands were investigated using TEM in both the planar and cross-section geometries. Typical island thickness is about 0.15nm and the buried oxidized porous silicon about 0.65μm. Retention of the island geometry is excellent. Few defects (essentially dislocations) are associated with either the anodizing or oxidation treatments. The interface sharpness between the epitaxial silicon/oxidized porous silicon is 10-20nm, an order of magnitude sharper than the back interface between the oxidized porous silicon and the substrate.
Synthesis of Buried Layers of β Sic in Single Crystal Silicon
Authors: Reeson Karen J , Hemment Peter L F , Stoemenos John , Davis John R , Celler George K 
Published: March 2011

AbstractIt is demonstrated that buried layers of β SiC can be fabricated within single crystal silicon substrates by implanting high doses of energetic carbon ions. If the implantation temperature is sufficiently high >625°C then the β SiC grows epitaxially within the silicon, during implantation, using the substrate as a seed. During the subsequent high temperature anneal redistribution of the implanted species occurs to give a well defined buried layer of β SiC overlain by single crystal silicon.
Buried Silicon-Nitride by High Temperature Nitrogen Implantation
Authors: Bussmann U. , Meerbach F.H.J. , Kaat E.H. Te 
Published: March 2011

AbstractBuried silicon nitride layers are formed by high temperature (600-800°C), high dose (0.3-1 x 1018 Ncm -2) nitrogen implantation into silicon. The nitride structure of as-implanted and annealed (6 h at 1200°C) samples is revealed by TEM-analysis. At implantation temperatures up to 600°C an amorphous SixN" layer is formed. At higher temperatures crystalline precipitates are found within an amorphous environment. They are identified as β-Si3N4 by electron diffraction. By subsequent annealing the previously amorphous material crystallizes to a-Si3N4, while the β-grains seem to be stable.
High Dose Carbon Ion Implantation Studies in Silicon
Authors: Srikanth K. , Chu M. , Ashok S. , Nguyen N. , Vedam K. 
Published: March 2011

AbstractThe electrical properties of crystalline Si (c-Si) subjected to high-dose (1E17 cm-2) implantation of C with varying post- anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-Si structures. In the as-implanted samples, a Schottky diode-like behaviour is seen but with a very high diode ideality factor. The well-known influence of ion damage on the Si surface barrier is clearly evident, but in addition we see the domination of transport by a Si-C buried layer formed after annealing . Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.
Dislocation Reduction on Simox Substrates by Using Multiple Implants
Authors: Cheek Tom F. , Chen Daniel 
Published: March 2011

AbstractA technique for dislocation density reduction in SIMOX (Separation by IMplantation of OXygen) substrates by using multiple implant and anneal cycles is described. This scheme produces SIMOX material with dislocation defect densities less than 1 x 105/cm2. This dislocation density value is three to four orders of magnitude lower than that of comparable single implant slices having the same total dose and anneal conditions.
Processing Simox Wafer Below the Critical Temperature
Authors: Sioshansi Piran , Namavar Fereydoon 
Published: March 2011

AbstractThe creation of SIMOX material by multiple step substoichiometry oxygen ion implantation of silicon wafers followed by high temperature annealing has already been demonstrated by different groups [1-4] This paper reports on the formation of SIMOX wafers at temperatures well below the critical temperature (500-550°C) specified for oxygen implantation of the SIMOX process. A multiple step procedure has been devised, each step consisting of oxygen ion implantation at doses of 2.5 and 3 x 1017 O+/cm2 followed by solid phase epitaxy at a temperature of 950°C for two hours. Non-destructive optical analysis and XTEM investigation of the wafers indicates the formation of a continuous buried oxide with good quality single crystal silicon on the surface after accumulated dose of 1.1x1018 O+/cm2 following high temperature annealing at 1300°C for six hours.The processing of SIMOX material at a lower temperature will enable the utilization of a wide variety of ion implanters, will simplify the design of the end station of the new generation high current ion implanters, and will have an impact on the availability and economics of SIMOX wafers.
Formation of Buried Oxide in Mev Oxygen Implanted Silicon
Authors: Nieh C.W. , Xiong F. , Ahn C. C. , Zhou Z. , Jamieson D. N. , Vreeland T. , Fultz B. , Tombrello T. A. 
Published: March 2011

AbstractWe have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x1018/cm2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO2.
Precipitate and Defect Formation in Oxygen Implanted Silicon-on-Insulator Material
Authors: Krause S.J. , Jung C.O. , Ravi T.S. , Wilson S.R. , Burke D.E. 
Published: March 2011

AbstractThe formation and structure of defects and precipitates in high-dose oxygen implanted silicon-on-insulator material was directly studied by weak beam and high resolution electron microscopy. In as-implanted material, the edge of the oxygen implant profile contained 1.5 nm diameter precipitates at a density of 1019 cm2. Defects, including micrctwins, stacking faults, and (311) defects, were present in as-implanted material but no threading or loop dislocations were observed. This suggests that threading dislocations are formed in the thermal ramping and annealing cycle. In material annealed for different times and temperatures precipitate size was much more dependent on peak temperature rather than time-at-temperature indicating that oxygen diffusion distance is less important than thermodynamic factors in controlling precipitate size. Annealing from 1150°C to 1250°C produced threading dislocations and possible dislocation dipoles which extended through the superficial layer. Transient annealing of very low dose oxygen implanted Si produced loop and threading dislocations. This suggests that a high heating rate during precipitation will generate excess Si interstitials at a rate high enough to create high stresses at precipitates and form dislocations. A qualitative model for dislocation formation is proposed and processing conditions for reducing dislocation density are suggested.
AB Initio Calculation of the Polarizability and Hyperpolarizabilrties of Infinite Periodic Polymers by the Sum-Overstates approach
Authors: Barbier Christian , Delhalle Joseph , Andre Jean-Marie 
Published: March 2011

ABSTRACTWe investigate the applicability of the Genkin-Mednis perturbative approach to the ab initio calculation of the static (hyper)polarizabilities of infinite periodic polymers. Test calculations on molecular hydrogen and polyacetylene chains are presented to assess some of the computational problems inherent to the method.
Advances in Organic Electro-Optic Devices
Authors: Thackara John I. , Lipscomb G. F. , Lytel R. S. , Ticknor A. J. 
Published: March 2011

ABSTRACTWe report initial experiments on the fabrication of active and passiveintegrated optic device structures based on poled polymer electro-optic buried channel waveguides. The process of channel waveguide definition and fabrication through electric field poling is described and experimental results are presented. The fabrication, theoretical performance modeling and experimental evaluation of several integrated optic device structures, including phase modulators, directional couplers and Y-branch interferometers, are also reported.
Femtosecond Dynamics and Nonlinear Optical Properties of Polyacetylene
Authors: Etemad S. , Baker G. L. , Rothberg L. , Kajzar F. 
Published: March 2011

ABSTRACTWe discuss two important aspects of the nonlinear optical response of polyacetylene, the prototype conjugated polymer. In the subband gap region, χ(3) of polyacetylene has a rich spectral response and its magnitude is found to be the largest among semiconductors. In the superband gap region, absorption of photons leads to direct photogeneration of charged solitons on a femtosecond-time-scale. These results are discussed in the context of a one-dimensional, coupled electronlattice system, and are generalized to other conjugated polymers.
Quadratic Electro-Optical Characterization of Molecular Nonlinear optical Materials
Authors: Luong John C. , Borrelli N. F. , Olszeuski A. R. 
Published: March 2011

ABSTRACTA convenient method of measuring the nonlinear optical properties of molecular compounds is described. The method involves measuring the quadratic electro-optical coefficient of a polymer composite containing a variable concentration of the candidate NLO material. The X(3) (ω) value obtained by this low-frequency Kerr measurement, after local-field corrections, can be compared to the nonresonant third-order susceptibility measured by degenerate-four-wave-mixing technique on selective samples. We find that the choice of the polymer matrix dictates the contribution of second-order susceptibility to the Kerr coefficient. Therefore, our method can also be extended to the measurement of second-order susceptibility, analogous to the technique of field-induced second-harmonic-generation.
Synthesis Approaches For Improving the Nonlinear Optical Properties of Pbz Polymers
Authors: Wolfe James F. , Loo Bock H. , Sanderson Robert A. , Bitler Steven P. 
Published: March 2011

ABSTRACTThe synthesis of three types of functionalized benzazole structures is described. A centrosymmetric dihydroxy-benzobisthiazole has been synthesized for incorporation in flexible polymers having rigid, conjugated, third order nlo active units in the main chain. Benzazole structures terminated with an N,N-dimethylamino group and a carboxyl group have been synthesized for use as second order nlo pendants with flexible polymers. Benzazole structures terminated with an N,N-dimethylamino group and an amino group have been synthesized as precursors to second order nlo guest molecules.
Synthesis and Characterization of New Electroactive Polymers
Authors: Dalton L. R. 
Published: March 2011

ABSTRACTA general scheme for the preparation of soluble electroactive polymers is reviewed with emphasis that polymers so prepared permit investigation of the effects of π-electron delocalization and lattice charge upon nonlinear optical activity. Particular attention is focused upon six membered ring polymer derivatized in 1,4 positions with vinylamine substituents. Such substituents influence rates of polymerization reactions and electronic properties as well as solubility. Preliminary measurement of χ(3) for as-synthesized polymers is effected by DFWM.
Four-Wave Mixing in Metal Poly-Ynes
Authors: Frazier C. C. , Chauchard E. A. , Cockerham M. P. , Porter P. L. 
Published: March 2011

ABSTRACTWe have reported previously that metal poly-ynes have large thirdorder optical susceptibilities. Based on the four-wave mixing studies reported here, we conclude that strong two-photon absorptions in metal poly-ynes contribute significantly to the observed third-order nonlinearities of these materials. Hyperpolarizability/r.u. increases only slightly with chain length for tetrahydrofuran solutions of the metal poly-ynes. The possible influence of conformers on this behavior is discussed.