bluuebunny/crossref_metadata_2025_split huggingface dataset:
The Relationship Between Second-Order Nonlinear Optical Properties And Ground-State Polarization
Authors: Bourhill Grant , Cheng Lap-Tak , Lee Ging , Marder Seth R. , Perry Joseph W. , Perry Matthew J. , Tiemann Bruce G. 
Published: March 2011

ABSTRACTA review is presented describing our recent work to correlate the first hyperpolarizability, β, of organic materials with the molecular parameter bond length alternation (BLA). Donor-acceptor polyenes displaying a wide BLA range were synthesized. For a particular chromophore, BLA was fine-tuned by varying solvent polarity. The degree of BLA was analyzed by X-ray diffraction, 1H-NMR and electronic absorption spectroscopy. Non-resonant, solvent-dependent, electric field induced second harmonic generation (EFISH) Measurements were performed to probe the variation in the second-order nonlinearity as a function of ground-state polarization. The resulting trend, which is fully consistent with theoretical predictions, identified chromophores possessing optimized positive and negative hyperpolarizabilities. An optimized chromophore was incorporated in a polymer matrix and poled. The resulting electro-optic coefficient was found to be significantly enhanced relative to the longer chromophore Disperse Red 1.
Rational Designs of Multifunctional Polymers-Conjugated Photorefractive Polymers
Authors: Yu Luping , Chan Wai-Kin , Chen Yongming , Peng Zhonghua 
Published: March 2011

ABSTRACTA novel type of photorefractive polymers, containing a conjugated backbone and a second order NLO chromophore, has been developed. A new polymerization method based on the Stille coupling reaction was explored to synthesize these materials. It was expected that the conjugated backbone would absorb photons in the visible region and play the triple role of charge generator, charge transporter and backbone. Several physical measurements demonstrated this expectation. Two beam coupling experiments clearly indicated an asymmetric optical energy exchange between two beams without applying an external electrical field. This is a conclusive demonstration for photorefractivity. Also, large optical gain of 5.7 cm-1 was observed under zero-field condition, which is comparable to most inorganic photorefractive materials. The versatility of the reaction makes possible the advancement of new polymer structures.
Fabrication of Poled Polymer Dans Waveguides and First Observation of Shg by Counter-Propagating Guided Waves
Authors: Otomo Akira , Stegeman George I. , Bosshard Christian , Mittler-Neher Silvia , Horsthuis Winfried H. G. , Möhlmann Gustaaf R. 
Published: March 2011

ABSTRACTPlane-parallel poled, low loss, channel waveguides are fabricated with a large poling field (200V/μm) in 4-dimethylamino-4'-nitrostilbene (DANS) side-chain polymers. The parallel poled film leads to efficient nonlinear optical applications for TE guided Modes. We demonstrate surface emitting second harmonic generation due to mixing of counter propagating waves with this film.
Laser–Recrystallized SOI Devices: Promises and Pitfalls
Authors: Kamins T I 
Published: March 2011

ABSTRACTRecrystallized SOI structures offer possibilities for new classes of devices, as well as improved performance of more conventional circuitry. Single-layer and multilayer circuits are possible. For large–geometry devices unseeded films should be satisfactory, but seeding will be required for high–performance, small–geometry circuits. In addition to the quality of the recrystallized film and the substrate, the properties of the interfaces must be optimized. The characteristics of each potential heat source must be considered when selecting one for a specific SOI structure; different sources will be optimum for different applications. The evolution of SOI device structures can be seen by considering different realizations of CMOS cells. SOI structures can be applied to conventional circuits and also should allow efficient integration of entire systems with closely interacting functions.
NMOS Dynamic Shift Registers in CO2 Laser-Crystallized Silicon Thin-Films on Fused Quartz
Authors: Chiang Anne , Zarzycki Mark H. , Meuli William P. , Johnson Noble M. 
Published: March 2011

ABSTRACTHigh-speed NMOS depletion-load ring oscillators and dynamic shift registers have been fabricated from laser-crystallized silicon thin-film transistors (TFT's) on fused quartz. We report on optimization of circuit fabrication process involving ion implantation and high temperature cycles to achieve inverter gains, logic thresholds, and input noise margins appropriate for logic operation. Characteristics of discrete devices are also used to evaluate a process simulator and a device simulator as tools for future designs.
Staggered CMOS: A Novel Three-Dimensional Technology
Authors: Maby E. W. , Antoniadis D. A. 
Published: March 2011

ABSTRACTWe report the fabrication of mutually self-aligned IGFET's in two silicon layers which are separated by a thin dielectric film. The transistors are configured such that the heavily doped source and drain regions of a transistor in one layer also serve as the gate electrodes for transistors in the other layer. One application of this three-dimensional technology is the implementation of a compact four-transistor “staggered” CMOS latch circuit which can be used to form part of a static random-access memory cell.
An Epitaxial Regrowth of Polysilicon to Single Crystal Silicon By H2 Annealing Process
Authors: Hirofuji Yuichi , Nomura Noboru , Kugimiya Koichi 
Published: March 2011

ABSTRACTSi epitaxial regrowth was realized through the thick interfacial oxide films of up to 2 nm by H2 annealing. The epitaxy took place in an anomorous region when the oxide was reduced to about a half of its initial peak height, indicating that about a half of the interfacial oxide films in areawise was completely reduced. In this region, redis-tribution or diffusion of super-saturated oxygen was also observed.A schematic model of the epitaxial regrowth by H2 annealing is presented.
N-Channel and P-Channel LPCVD Polysilicon Mosfet's and Effects of Grain Boundary Passivation
Authors: Shichijo H. , Malhi S. D. S. , Chatterjee P. K. , Shah A. H. , Pollack G. P. , Richardson W. H. , Shah R. R. , Douglas M. A. , Lam H. W. 
Published: March 2011

ABSTRACTMOSFETs built in a thin layer of as-deposited, small-grain LPCVD polysilicon offer an attractive alternative to the beam recrystallized SOI MOSFETs because of its simple process and low cost. The inherently inferior performance of polysilicon MOSFET can be improved by the grain boundary passivation in hydrogen plasma. The device characteristics of n-channel and p-channel polysilicon MOSFETs are compared before and after the hydrogen passivation. Dramatic improve-ment of drive current and curtailment of leakage current has been observed after the passivation. The anomalous leakage current has been observed and is attributed to the soft breakdown of the drain junction.
Laser Recrystallization Technique for Active Matrix LC Display
Authors: Nishimura T , Ishizu A. , Matsumoto T. , Akasaka Y. 
Published: March 2011

ABSTRACTThis paper demonstrates the technological approach to the high performance thin film transistor (TFT) fabricated by using the laser-recrystallization technique on a fused quartz wafer and its application for active matrix type liquid crystal display (LCD) with transmissive mode. Problem to be overcome and still ahead in the recrystallization, TFT performance, and application for LCD are addressed.
Applications of CdSe Thin Film Transistors in Flat Panel Displays
Authors: Luo Fang-Chen 
Published: March 2011

ABSTRACTCdSe TFT's have been successfully utilized in large-area TFT-addressed liquid crystal and electroluminescent display panels. Display panels up to 5″ × 5″ 250 × 250 elements have been demonstrated. CdSe TFTs have exhibited acceptable electrical characteristics, stability and reproductibility for display applications. In this paper, test results of CdSe TFT's in these areas will be reported.For the fabrication of CdSe TFT matrix circuits for display applications, several methods such as the one-vacuum-pump-down process using aperture masks, the photolithographic process and the hybrid process have been used. A review and comparison of the results of these processes will be presented.
Material Properties Controlling the Performance of Amorphous Silicon Thin Film Transistors
Authors: Powell M. J. 
Published: March 2011

ABSTRACTAmorphous silicon thin film transistors have been fabricated with a number of different structures and materials. To date, the best performance is obtained with amorphous silicon - silicon nitride thin film transistors in the inverted staggered electrode structure, where the gate insulator and semiconductor are deposited sequentially by plasma enhanced chemical vapour deposition in the same growth apparatus.Localised electron states in the amorphous silicon are crucial in determining transistor performance. Conduction band states (Si-Si antibonding σ*) are broadened and localised in the amorphous network, and their energy distribution determines the field effect mobility. The silicon dangling bond defect is the most important deep localised state and their density determines the prethreshold current and hence the threshold voltage. The density of states is influenced by the gate insulator interface and there is probably a decreasing density of states away from this interface. The silicon dangling bond defect in the bulk amorphous silicon nitride also leads to a localised gap state, which is responsible for the observed threshold voltage instability.Other key material properties include the fixed charge densities associated with primary passivating layers placed on top of the amorphous silicon. The low value of the bulk density of states in the amorphous silicon layer increases the sensitivity of device characteristics to charge at the top interface.
a-Si:H TFT: Potential Suitabilities for Gate and Source-Drain Self-Aligned Structure
Authors: Diem B. , Chenevas-Paule A. 
Published: March 2011

Performances of a-Si:H TFT's are partly restricted by the parasitic capacitances due to the source-drain/gate overlapping and the channel length. These capacitances are inherent to the conventional photolithographic process [1] and to the MIS structure.The use of the self-aligned a-Si:H TFT technology should allow the manufacture of short channel TFT's (L < 5 μm) where the overlapping length becomes negligible, on a large area as well as in high definition matrices. Such transistors could constitute in the near future the solution for high performances matrix arrays as well as their peripheral electronics.
A One-Micrometer Channel Length α-Si Thin-Film Field-Effect Transistor
Authors: Yaniv Z. , Hansell G. , Vijan M. , Cannella V. 
Published: March 2011

ABSTRACTA new method of fabricating short channel α-Si TFTs has been developed. One-micrometer channel length α-Si thin-film field effect transistors have been fabricated and tested. Threshold voltages as low as 1.9V and field-effect mobilities as high as 1 cm 2/V-sec are reported. These devices were fabricated by techniques compatible with the production of large area liquid crystal displays.
Silicon on Insulator by High Dose Implantation
Authors: Hemment P. L. F. 
Published: March 2011

ABSTRACTSilicon on insulator structures consisting of a buried dielectric, formed by the implantation of high doses of oxygen ions, have been shown to be suitable substrates for LSI circuits. The substrates are compatible with present silicon processing technologies and are confidently expected to be suitable for VLSI circuits. In this paper the microstructure and physical properties of this SOI material will be described and the dependence of these characteristics upon the implantation conditions and subsequent thermal processing will be discussed. With this information, it is then possible to outline the specification for a high current oxygen implanter.
Dielectric Isolation Using Porous Silicon
Authors: Baumgart H. , Frye R. C. , Phillipp F. , Leamy H. J. 
Published: March 2011

ABSTRACTThe fabrication of silicon-on-insulator structures was examined utilizing epitaxial growth of Si films on porous silicon and subsequent enhanced oxidation of the porous substrate. Porous silicon films have been formed by local anodic dissolution of silicon wafers in HF, while retaining the single crystalline structure. Low temperature liquid phase epitaxy (LPE) from saturated Ga solutions as well as molecular beam epitaxy (MBE) and laser induced epitaxy have been studied. Transmission electron microscopy (TEM) has demonstrated that all three techniques can achieve crystalline Si film growth on porous silicon. Surface smoothness and crystal perfection of the resulting epitaxial layers varies considerably with each technique.
Incoherent Light Recrystallization of Silicon-On-Insulator Films
Authors: Robinson Mc D. , Celler G. K. , Lischner D. J. 
Published: March 2011

ABSTRACTEnergy sources used to convert polycrystalline silicon-on-insulator films to single crystal through melting and recrystallization have included electron beams, lasers, graphite strip heaters, and incoherent light from tungsten halogen and vapor arc lamps. This review focuses on incoherent light recrystallization of polycrystalline silicon; comparing tungsten filament and vapor arc lamp sources, and linear zone melting vs. uniform illumination. The discussion includes material redistribution, defect formation, and the dynamics of melting.
Lateral Seeding of Silicon-On-Insulator Using an Elliptical Laser Beam: A Comparison of Scanning Methods
Authors: Zorabedian P. , Kamins T. I. 
Published: March 2011

ABSTRACTTwo scanning methods for laterally-seeded recrystallization of striped silicon-on-insulator/seed structures with an elliptical laser beam are discussed. One method requires repeated remelting of the silicon film and is controlled by the temperature of the substrate, which is locally heated by the beam. This method results in very few defects and single-crystal silicon-on-insulator stripes up to 50 μm wide. The second method involves little remelting and is primarily controlled by the lateral offset of the beam with respect to the stripes. Single-crystal silicon-on-insulator stripes up to 40 μm wide have been obtained, with defects consisting primarily of stacking faults and twins, as well as some grain boundaries. These defects show little effect on MOS transistor leakage current.
Structural Properties of Dielectric Layers Following CO2Laser Irradiation of SOI Structures
Authors: Baumgart H. , Arnold E. , Petruzzello J. , McGee T. F. , Frommer M. H. 
Published: March 2011

ABSTRACTSemi-insulating polycrystalline silicon films have been used as matching layers in micro-zone-melting recrystallization experiments of silicon-on-insulator (SOI) structures. The effect of the laser irradiation on the structural composition and crystallographic properties has been investigated by transmission electron microscopy and Auger electron spectroscopy. CO2laser processing has been shown to lead to redistribution of oxygen and interface segregation of thin oxide and silicon zones.
Line-Source Processing of SOI Structures with Laser and Electron Beam
Authors: Palkuti Leslie J. , pang Chan-Sui 
Published: March 2011

ABSTRACTLine-shaped laser and electron beams in combination with halogen-lamp substrate heating were used to fabricate single-crystal SOI films. Electron-beam and laser systems were developed to achieve a minimum beam cross section of 10–100 microns and aspect ratios up to 70. Unseeded SOI films were fabricated with a (100) textured single-crystal structure. Seeded films were recrystallized with 20 × 80-micron single crystal islands with no low-angle grain boundaries. A process window of 1 to 10 percent in electron-beam power was measured. Single-crystal films were obtained at a line-scan velocity up to 2 cm/s suggesting a potential throughput of about 100 wafers per hour. The high scan velocity allows for minimizing the high-temperature cycle to under 30 seconds that the wafer is exposed to during recrystallization. This short temperture cycle is compatible with the fabrication of three dimensional devices, since unwanted diffusion and substrate damage are minimized.
The Effect of Organic Macromolecules on the Vateritet to Calcite Transformation
Authors: Spearing Liisa Kuhn , Sarig S. , Fink D. J. , Heuer A. H. 
Published: March 2011

ABSTRACTSmall quantities of acidic macromolecules were added to crystallizing calcium carbonate in an attempt to engineer crystal growth. The additives are simple analogs to those molecules found in close association with the mineral phase in biological ceramics. When 5 or 10 ppm of the four additives (poly-L-glutamate, poly-L-aspartate, polyacrylate and polymaleate) were added to aqueous suspensions of metastable vaterite, the transformation to calcite was markedly retarded, and the morphology of the final crystal product was altered. The two polypeptides were most effective in inhibiting calcite nucleation and growth; they also promoted vaterite aggregation, and caused the formation of large calcite crystals.
Synthesis of Functionalized Targeted Polyamides
Authors: Mungara P. M. , Gonsalves K. E. 
Published: March 2011

ABSTRACTA synthetic approach to polyamides containing the tyrosine-leucine linkage is presented. The diphenyl phosphoryl azide, (DPPA), coupling technique was utilized to synthesize the monomers. Solution polymerization of monomer I, tyrosylleucyliminohexamethyleneiminoleucyltyrosine, with adipoyl and sebacoyl chlorides gave polymers with intrinsic viscosities of 0.18 dL/g and 0.13 dL/g respectively in 90% formic acid. Interfacial polymerization of the monomer yielded a fibrous crosslinked material which was found to be a poly(amide-ester) by IR spectroscopic analysis.
Wear and Friction of Unio Crassus Shell in Dry Sliding Contact with Steel
Authors: Hirvonen J-P. , Lappalainen R. , Koskinen J. , Likonen J. , Pekkarinen M. 
Published: March 2011

ABSTRACTBiological materials such as shells possess a useful combination of mechanical properties. For instance, good fracture toughness combined with a relatively high hardness has been reported. The response of these properties to a tribological performance could presumably be very beneficial. Unfortunately no such research has been reported, although this kind of information is invaluable in possible utilization of biomimetic or biological processes in producing of materials.In this work chemical composition of Unio Crassus shells were characterized using secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectroscopy (RBS) and the microstructure was determined with X-ray diffraction (XRD) and scanning electron microscopy (SEM). Specimens of 20×10 mm in size with a thickness of a few millimetres were cut and mechanically polished followed by ultrasonic cleaning in deionized water. Wear and friction measurements were performed in a pin-on-disc tester with a hardened steel pin 6 mm in diameter as a counter face. Tests were carried out in a relative humidity of 50 % at room temperature with a sliding speed of 15 mm/s. The measurements indicate a friction coefficient of 0.3 – 0.4 which is reasonable low. Moreover, wear resistance was found to be excellent. The wear resistance of the material was similar to those of the best synthetic diamond-like carbon films. The storage of the specimen at room temperature for 150 days deteriorated the material resulting in much worse tribological properties.
Biomimetic Lithography and Deposition Kinetics of Iron Oxyhydroxide Thin Films
Authors: Rieke Peter C. , tarasevich Barbara J. , Wood Laurie L. , Marsh Brian D. , Song Lin , Fryxell Glen E. , Engelhard Mark H. , Baer Don R. , John Connie M. 
Published: March 2011

ABSTRACTHeterogeneous nucleation and crystal growth on protein substrates are critical steps in biological hard tissue formation. Self assembled monolayers can be derivatized with various organic functional groups to mimic the “nucleation proteins” for induction of mineral growth. Studies of nucleation and growth on SAMs can provide a better understanding of biomineralization and can also form the basis of a superior thin film deposition process. We demonstrate that micron-scale, electron and ion beam, lithographic techniques can be used to pattern SAMs with functional organic groups that either inhibit or promote mineral deposition. Patterned films of iron oxyhydroxide were deposited on the areas patterned with nucleation sites. Studies of the deposition kinetic of these films show that the surface indeed induces heterogeneous nucleation and that film formation does not occur via absorption of polymers or colloidal material formed homogeneously in solution. The nucleus interfacial free energy was calculated to be 88 mJ/m2 on a SAM surface composed entirely of sulfonate groups.
Injection Molding of ProNectin®F Dispersed in Polystyrene for The Fabrication of Plastic Ware Activated Towards Attachment of Mammalian Cells
Authors: Stedronsky Erwin R. , Cappello Joseph , David Samuel , Donofrio David M. , Mcarthur Tina , Mcgrath Kevin , Panaro Marilyn A. , Putnam Donna , Spencer William , Wallis Owens 
Published: March 2011

ABSTRACTProNectin®F is a recombinant engineered protein polymer of de novo design which incorporates the RGD epitope recognized by mammalian cell integrins. It is biologically active as a cell attachment protein, manifests properties of a planar polymeric surfactant, and is extremely resistant to thermal degradation. ProNectin®F was dispersed onto polystyrene powder, fabricated into plastic ware through injection molding, and the plastic ware was shown to have cell attachment activity. This technology represents a new paradigm for the production of plastic ware useful for mammalian cell culture under serum free conditions; and more generally, for the production of molded devices for use in contact with cells in vitro or in vivo.
Selective Attachment of Synthetic DNA to Self-Assembled-Monolayer Functionalized Surfaces
Authors: Chrisey Linda A. , Roberts Paul M. , Benezra Valarie I. , Dressick Walter J. , Dulcey Charles S. , Calvert Jeffrey M. 
Published: March 2011

ABSTRACTSelf-assembled monolayer (SAM) films of organosilanes have been characterized as surfaces for the spatially-controlled, selective attachment of single-stranded synthetic DNA. Geometric patterns of DNA on silica substrates have been created by photochemical modification of the SAMs to produce regions which promote or resist DNA attachment. The attachment of DNA to the modified surfaces was followed using UV spectroscopy, radioassay, ellipsometry, and enzyme-linked colorimetric assay. We have also demonstrated that immobilized DNA is capable of hybridization with a complementary strand under stringent conditions.
Two-Dimensional Protein Crystals (S-Layers): Fundamentals and Application Potential
Authors: Sleytr Uwe B. , Sara M. , Pum D. , Küpcü S. , Messner P. 
Published: March 2011

ABSTRACTCrystalline cell surface layers (S-layers) represent the outermost cell envelope component in many bacteria. The oblique, square or hexagonal lattices are formed of assemblies of a single protein or glycoprotein species. Isolated S-layer subunits are endowed with the ability to assemble into monomolecular arrays in suspension, on solid surfaces (e.g. metals, polymers, glass, carbon, silicon), at the air/water interface, or on lipid films generated by the Langmuir Blodgett technique. S-layer lattices are isoporous structures with functional groups located on the surface and in the pores in an identical position and orientation. These characteristic features have led to applications of S-layers as (i) ultrafiltration membranes with pores of identical size and morphology and a broad chemical modification potential, (ii) matrices for the controlled and reproducible immobilization of functional macromolecules, as required for affinity and enzyme membranes, affinity microcarriers and biosensors, (iii) carriers for Langmuir-Blodgett films and reconstituted biological membranes, (iv) immobilization matrices and adjuvants for weakly immunogenic antigens and haptens and (v) patterning elements in molecular nanotechnology.