bluuebunny/crossref_metadata_2025_split huggingface dataset:
Determination of aromatic amines from azo dyes reduction by liquid‐phase sorbent trapping and thermal desorption‐gas chromatography‐mass spectrometry
Authors: Zhang Qing , Wang Chao , Bai Hua , Wang Xing , Wu Ting , Ma Qiang 
Published: June 2009

AbstractA novel method based on thermal desorption was developed for the trapping of aromatic amines from azo dyes reduction in liquid phase. Combining GC‐MS, the detection limits for 21 kinds of aromatic amines ranged from 0.1 to 3 mg/kg. The recoveries of most aromatic amines were ⪈70% with RSDs ⪇10%. This method also offers low sample and organic solvent requirements, effective preconcentration and convenient procedure. It has been applied to determine aromatic amines from the real samples of textile and yielded good results.
Glycosylphosphatidylinositols are potential targets for the development of novel inhibitors for aerolysin‐type of pore‐forming bacterial toxins
Authors: Wu Qiuye , Guo Zhongwu 
Published: June 2009

AbstractMany bacteria produce toxins that cause damage through the formation of pores in the host cell membrane. Some of these toxins, such as aerolysin, use glycosylphosphatidylinositols (GPIs) as their binding receptors to assist the pore formation on the host cell surface and the subsequent insertion of the resultant pores into the cell membrane. GPIs are a class of complex glycolipids that anchor surface proteins and glycoproteins onto the cell membrane in eukaryotic species. This review has summarized the reported evidences supporting the GPI‐dependent pore‐forming mechanism for aerolysin‐type of toxins and analyzed the possibility of targeting this unique process for the design and development of novel GPI‐based inhibitors for these pore‐forming bacterial toxins. © 2009 Wiley Periodicals, Inc. Med Res Rev, 30, No. 2, 258–269, 2010
Transition metal NMR chemical shifts and polarizability effect in organometallic complexes
Authors: Egorochkin Alexey N. , Kuznetsova Olga V. , Khamaletdinova Nadiya M. , Kurskii Yury A. , Domratcheva‐Lvova Lada G. , Domrachev Georgy A. 
Published: June 2009

AbstractThe literature data on substituent influence on the 51V, 55Mn, 57Fe, 59Co, 61Ni, 95Mo, 103Rh, 183W, 187Os and 195Pt NMR chemical shifts (δ) and on J (M, P; M = Mn, Fe, Mo, Rh, W, Os) coupling constants have been analyzed for 30 series of the organometallic complexes. It has been established for the first time that the δ and J values depend on the inductive, resonance and polarizability effects of substituents. The polarizability effect is caused by the partial charge on the central M atom. The contribution of this effect ranges from 3 to 86%. Copyright © 2009 John Wiley & Sons, Ltd.
Northern Ireland manufacturing industrial rates campaign
Authors: Turley Barry 
Published: June 2009

Abstract

The Northern Ireland Manufacturing Focus Group's campaign to oppose the imposition of industrial rates was run by political consultancy ASITIS Consulting, based in Belfast. In a helter‐skelter two‐year campaign the group brought the business community into the political realm in a way never achieved before in Northern Ireland. The group organized the manufacturing sector into a potent political force which used a sophisticated array of lobbying and PR techniques to leave the newly formed devolved Assembly with little option but to support the group and cap the rate.

The campaign was the only Northern Ireland‐based public affairs initiative to be nominated for a national award and saved the manufacturing sector £50 million a year. These savings are now seen as important, given the onset of the credit crunch and are credited with saving thousands of jobs.

Copyright © 2009 John Wiley & Sons, Ltd.
Polycationic calix[8]arene receptors grafted onto polymeric matrix: smart material for heparin neutralization
Authors: Mecca Tommaso , Cunsolo Francesca 
Published: June 2009

AbstractHeparin is widely prescribed as an anticoagulant medicine and is beneficial to millions of patients. However, the use of heparin in open‐heart surgery, where it enables a continuous flow of blood throughout the process, is still problematic. Its anticlotting properties are crucial for a successful operation, but after surgery the patient's blood needs to return normal and acquire its former ability to coagulate. If this process fails, the outcome may prove fatal. Currently, protamine sulfate is used to neutralize heparin after open‐heart surgery. However, protamine itself causes allergic reactions and other side effects and is sometimes fatal. For this reason, the finding of new heparin antagonists or much safer methods for heparin removal from blood is currently of great interest. Recently we have reported on the synthesis of calix[8]arene polycations that have shown an exceptional neutralization power towards heparin both in physiological solution and in blood. In this work, we have studied the grafting of these calix[8]arene derivatives onto a polymeric matrix with the aim to obtain a new polymeric material appropriate for the design and realization of filters or membranes able to effectively remove heparin from blood. In this way, also the side effects connected to systemic administration of heparin antagonists are avoided. Besides the synthesis, preliminary results on the neutralization capacity towards heparin, both in physiological solution and in blood, are reported. Copyright © 2009 John Wiley & Sons, Ltd.
Anionic polymerization of 9‐vinylanthracene with the alkyllithium/amine system
Authors: Natori Itaru , Natori Shizue 
Published: June 2009

AbstractThe anionic polymerization of 9‐vinylanthracene (VAN) with the alkyllithium (RLi)/amine system was examined to explore new initiator systems that could polymerize VAN at moderate temperatures in hydrocarbon solvents. Important factors in the anionic polymerization of VAN were found to be the high nucleophilicity of the RLi/amine and poly(9‐vinylanthracenyl)lithium (PVANLi)/amine systems, the low steric hindrance of the amine molecule, and good solubility of PVANLi during the polymerization. The t‐butyllithium (t‐BuLi)/N,N,N',N'‐tetramethylethylenediamine (TMEDA) (1.00/1.25) system achieved the highest PVAN yield in toluene at room temperature (ca. 25°C), although the limitations of yield and the number average molecular weight (Mn) were around 90 wt% and 2000, respectively. The results obtained from spectrum analyses suggested that the anionically polymerized PVAN would be considered a favorable polymer for the preparation of new luminescent materials. Copyright © 2009 John Wiley & Sons, Ltd.
The synergistic flame‐retardant effect of O‐MMT on the intumescent flame‐retardant PP/CA/APP systems
Authors: Liu Yun , Wang Jun‐Sheng , Deng Cheng‐Liang , Wang De‐Yi , Song Yan‐Peng , Wang Yu‐Zhong 
Published: June 2009

AbstractThe flame retardancy of a novel intumescent flame‐retardant polypropylene (IFR‐PP) system, which was composed of a charring agent (CA), ammonium polyphosphate (APP), and polypropylene (PP), could be enhanced significantly by adding a small amount (1.0 wt%) of an organic montmorillonite (O‐MMT). The synergistic flame‐retardant effect was studied systematically. The thermal stability and combustion behavior of the flame‐retarded PP were also investigated by thermogravimetric analysis (TGA), limiting oxygen index (LOI), vertical burning test (UL‐94), scanning electronic microscopy (SEM), and cone calorimeter test (CCT). TGA results demonstrated that the onset decomposition temperatures of IFR‐PP samples, with or without O‐MMT, were higher than that of neat PP. Compared with IFR‐PP, the LOI value of IFR‐PP containing 1.0 wt% O‐MMT was increased from 30.8 to 33.0, and the UL‐94 rating was also enhanced to V‐0 from V‐1 when the total loading of flame retardant was the same. The cone calorimeter results showed that the IFR‐PP with 1.0 wt% of O‐MMT had the lowest heat release rate (HRR), total heat release (THR), total smoke production (TSP), CO production (COP), CO2 production (CO2P), and mass loss (ML) of all the studied IFR‐PP samples, with or without O‐MMT. All these results indicated that O‐MMT had a significantly synergistic effect on the flame‐retardancy of IFR‐PP at a low content of O‐MMT. Copyright © 2009 John Wiley & Sons, Ltd.
The role of feticide in the context of late termination of pregnancy: a qualitative study of health professionals' and parents' views
Authors: Graham R. H. , Mason K. , Rankin J. , Robson S. C. 
Published: June 2009

AbstractObjectiveTo provide an in‐depth account of the role feticide has relative to experiences of late termination of pregnancy (TOP).MethodExploratory qualitative interview study. Participants were recruited from three National Health Service (NHS) units that provide secondary and tertiary level fetal medicine services. Data were collected from 36 in‐depth interviews, with 12 parents (representing eight cases) who had experienced late TOP for fetal anomaly and 23 health professionals with experience of feticide provision. The qualitative analysis utilised a generative thematic approach, facilitated by Atlas.ti qualitative software package.ResultsTwo key themes from the study provide data on how perceptions of feticide were described by those involved in late TOP: (1) feticide is recognised and described as a legitimate clinical procedure and (2) the practice of feticide is conceptualised as difficult but necessary.ConclusionFor health professionals who provide and facilitate feticide, and for parents making decisions about late TOP and feticide, the procedure is understood as a necessary rather than chosen activity. Parents' perceptions of feticide may differ, and good clinical care must be designed to cope with this variation. For health professionals, feticide seems more readily distinguished from other types of TOP activities and may evoke simultaneous positive and negative perceptions. Copyright © 2009 John Wiley & Sons, Ltd.
Uses of proton pump inhibitors and serum potassium levels
Authors: Gau Jen‐Tzer , Heh Victor , Acharya Utkarsh , Yang Yu‐Xiao , Kao Tzu‐Cheg 
Published: June 2009

AbstractPurposeProton pump inhibitor (PPI) may suppress adrenal cortical steroid synthesis and release, thereby leading to electrolyte disturbances. Both hyponatremia and hyperkalemia in the setting of PPI therapy have been documented in case reports. The objective of this study was to examine the association between serum potassium (K+) level and PPI use.MethodsA retrospective data analysis of hospitalized adults aged ≥65 years during 2006, including PPI users (N = 257) and PPI non‐users (N = 388), was conducted. Multiple linear and logistic regression analyses were used to assess the association between PPI use and serum K+ level.ResultsPPI users [mean age (SD):79.7 (8.0) years; 70% female] had significantly higher serum K+ levels than PPI non‐users [80.2 (8.8) years; 64% female] on admission [4.13 (0.62) vs. 3.97 (0.57) mmol/L; p < 0.001]. The linear regression model revealed that ≥2 defined daily dose (DDD) units of PPI use were a significantly positive contributor to serum K+ levels (p = 0.021) after adjusting for age, serum creatinine levels, sex, history of diabetes, and uses of the following drugs: angiotensin‐converting enzyme (ACE) inhibitor, angiotensin receptor blocker, β blocker, diuretics, spironolactone, K+ supplement, non‐steroidal anti‐inflammatory drugs, atypical antipsychotics, and narcotics. However, multiple logistic regression model revealed that high dose PPI therapy was not associated with an increased risk for hyperkalemia occurrence (p = 0.762).ConclusionHigher serum K+ levels were observed among PPI users when compared to PPI non‐users. High daily dose PPI therapy may be an independent positive predictor of serum potassium levels. Copyright © 2009 John Wiley & Sons, Ltd.
Comparative proteome profile of immature rat ovary during primordial follicle assembly and development
Authors: Wang Ningling , Zhang Ping , Guo Xuejiang , Xie Jin , Huo Ran , Wang Fuqiang , Chen Lin , Shen Jian , Zhou Zuomin , Shi Qinghua , Zhao Baige , Sha Jiahao 
Published: June 2009

AbstractThe assembly of primordial follicles early in ovarian development and subsequent transition to primary follicles are critical processes in ovarian biology. Inappropriate coordination of these processes contributes to ovarian pathologies such as premature ovarian failure and infertility. To better understand the molecular mechanisms involved in primordial follicle assembly and development, 2‐D PAGE and MALDI‐TOF/TOF technologies were used to construct a comparative proteome profile of the immature rat ovary at specific time‐points (0, 24, 48, and 72 h postpartum). A total of 154 differential protein spots corresponding to 134 different proteins were definitively identified between any two time‐points. Further cluster analysis showed four expression patterns, and each pattern correlated with specific cell processes that occur during early ovarian development. Seven proteins were randomly selected to verify expression patterns using Western blotting, and subsequently immunohistochemistry was performed to further investigate their cellular localization. Additionally, detailed functional analyses of these differentially expressed proteins were performed. Elucidation of how these changes in protein expression level coordinate primordial follicles assembly and development is intended to provide a better understanding of these critical biological processes early in ovarian development and will provide potential therapeutic molecular targets to regulate ovarian function and treat ovarian disease.
Weed control in glyphosate‐tolerant maize in Europe
Authors: Dewar Alan M 
Published: June 2009

AbstractMaize growing in the EU27 increased to over 13 million ha in 2007, most of which (>80%) was grown in just eight countries (France, Romania, Germany, Hungary, Italy, Poland, Spain and Bulgaria). The number of herbicides used to control the wide spectrum of weeds occurring in all these countries is likely to decline in the future as each current active ingredient is reassessed for toxicological and environmental safety under Directive 91/414/EEC. Glyphosate has already been approved under this directive. Glyphosate, applied alone or in combination with currently available residual herbicides to genetically modified varieties tolerant to glyphosate, can provide a viable, flexible and profitable alternative to conventional weed control programmes. Glyphosate usage with glyphosate‐tolerant varieties also provides an environmentally sustainable weed control option as long as sufficient diversity of weed management options (crop rotation, chemical diversity, multiple cultural and mechanical practices, buffer strips) is maintained within the farm management system. Appropriate product stewardship measures will be required to maximise the long‐term overall benefits of the glyphosate‐based system. Specifically, care will need to be taken to manage potential weed shifts to more difficult‐to‐control species and to reduce the risk of selection for glyphosate‐resistant weeds. Copyright © 2009 Society of Chemical Industry
Fluticasone furoate (Avamys): new intranasal steroid spray
Authors: Chaplin Steve 
Published: June 2009

AbstractFluticasone furoate (Avamys) is a new intranasal steroid spray for the treatment of allergic rhinitis. Our New product review presents the clinical trial data and describes how this new formulation might be preferred by patients. Copyright © 2009 Wiley Interface Ltd
Comparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETs
Authors: Chow T. Paul , Naik H. , Li Z. 
Published: June 2009

AbstractWe have comparatively characterized the electrical characteristics of 4H‐SiC and 2H‐GaN MOS capacitors and FETs. While progressive refinement of gate oxide processes, notably with NO anneal, has resulted in better threshold voltage control, reduced subthreshold slope and higher field‐effect mobility for 4H‐SiC MOSFETs, we have recently reported more superior MOS parameters for 2H‐GaN MOSFETs. In addition, we have performed MOS‐gated Hall measurements to extract the intrinsic carrier concentration and MOS mobility, indicating that both less channel electron trapping and scattering take place in 2H‐GaN MOSFETs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Extreme temperature 6H‐SiC JFET integrated circuit technology
Authors: Neudeck Philip G. , Garverick Steven L. , Spry David J. , Chen Liang‐Yu , Beheim Glenn M. , Krasowski Michael J. , Mehregany Mehran 
Published: June 2009

AbstractExtreme temperature semiconductor integrated circuits (ICs) are being developed for use in the hot sections of aircraft engines and other harsh‐environment applications well above the 300 °C effective limit of silicon‐on‐insulator IC technology. This paper reviews progress by the NASA Glenn Research Center and Case Western Reserve University (CWRU) in the development of extreme temperature (up to 500 °C) integrated circuit technology based on epitaxial 6H‐SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs fabricated and packaged by NASA have now demonstrated thousands of hours of continuous 500 °C operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Design, modeling, and characterization of transistors and circuits at temperatures from 24 °C to 500 °C are also described. CWRU designs for improved extreme temperature SiC JFET differential amplifier circuits are demonstrated. Areas for further technology maturation, needed prior to beneficial system insertion, are discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Measurements of impact ionization coefficients of electrons and holes in 4H‐SiC and their application to device simulation
Authors: Hatakeyama Tetsuo 
Published: June 2009

AbstractThis article is intended to review measurements and modeling of anisotropic impact ionization coefficients of electrons and holes in 4H‐SiC. Owing to the hexagonal crystal structure, the carrier transport in 4H‐SiC shows anisotropy, such as anisotropic mobility and anisotropic impact ionization coefficients. The anisotropy of impact ionization coefficients brings about the difference in the breakdown voltage of p+n diodes on Si‐face and A‐face. Experiments showed that the breakdown voltage of a p+n diode on A‐face is 62 percent of that on Si‐face. This difference in breakdown voltage corresponds to 81 percent of anisotropy in breakdown fields. The impact ionization coefficients parallel and perpendicular to c‐axis were extracted from measurements of the breakdown voltage and the multiplication factor of holes in high electric fields. The analytical model of the anisotropic impact ionization coefficients, which interpolates impact ionization coefficients parallel and perpendicular to c‐axis, was derived, considering the energy transport in the avalanche phenomena. The effects of anisotropic impact ionization coefficients on the avalanche breakdown in 4H‐SiC power devices are examined. We show that the avalanche breakdown voltage of a power device is affected by the anisotropy of impact ionization coefficients, because avalanche breakdown occurs at the field crowding point at peripheral edge of power device, where the lateral field dominates. Finally, we show that the optimized two‐zone junction termination structure suppresses the degradation of the breakdown voltage caused by anisotropy of the impact ionization coefficients. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
4H‐SiC MISFETs with nitrogen‐containing insulators
Authors: Noborio Masato , Suda Jun , Beljakowa Svetlana , Krieger Michael , Kimoto Tsunenobu 
Published: June 2009

Abstract4H‐SiC MISFETs with nitrogen‐containing insulators have been fabricated and characterized. Several techniques have been explored to incorporate nitrogen in the gate insulator in order to improve the density of interface states and thereby the channel mobility. The techniques are N2O‐grown oxides, the oxidation of a surface layer co‐implanted with N+ and Al+, deposited SiO2 annealed in N2O and NO, and deposited SiNx /SiO2 annealed in N2O. By optimizing the formation process of the gate insulators, MIS capacitors with N‐containing insulators have demonstrated an interface state density close to the conduction band edge below 2 × 1011 cm–2 eV–1 which is one or two orders‐of‐magni‐ tude lower than that of MOS capacitors with oxides grown in dry O2. The channel mobility of the n‐channel 4H‐SiC(0001) MISFETs with N‐containing insulators is increased to about 30 cm2/Vs. In addition, an even higher channel mobility of 50 cm2/Vs has been realized by utiliz‐ ing N‐containing insulators adequately processed on the 4H‐SiC (000$ \bar 1 $) face. From the experimental results, the dominant scattering mechanisms in SiC MISFETs have been identified; Coulomb scattering and electron trapping at interface states dominate the channel mobility in SiC MOSFETs with thermally‐grown and deposited SiO2. The application of N‐containing insulators to p‐channel 4H‐SiC MIS devices is also discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Design, process, and performance of all‐epitaxial normally‐off SiC JFETs
Authors: Malhan Rajesh K. , Bakowski Mietek , Takeuchi Yuuichi , Sugiyama Naohiro , Schöner Adolf 
Published: June 2009

AbstractThis paper reviews the normally‐off (N‐off) and normally‐on (N‐on) SiC junction field effect transistor (JFET) concepts and presents an innovative all‐epitaxial double‐gate trench JFET (DGTJFET) structure. The DGTJFET design combines the advantages of lateral and buried gate JFET concepts. The lateral JFET advantage is the epitaxial definition of the channel width and the buried gate JFET advantage is the small cell size. In the DGTJFET process the epitaxial embedded growth in trenches facilitates the small cell pitch and the vertical direction of the channel. A detailed numerical simulation analysis compares the potential of the DGTJFET design with reported lateral channel and buried gate JFET structures.Migration enhanced embedded epitaxy (ME3) and planarization processes were developed to realize narrow cell pitch DGTJFETs for high‐density power integration. The highly doped vertical channel of the DGTJFET defined by the ME3growth process makes it possible to accurately control the sub‐micron channel dimensions in order to realize a low specific on‐state resistance (RON) and a high saturation current capability. The anisotropic nature of SiC is taken into account for the channel design considerations.The successful application of the new process technologies for the development of the all‐epitaxial DGTJFETs is discussed. Fabricated 5.5 μm cell pitch 4H‐SiC DGTJFETs demonstrate the saturation current density capability of more than 1000 A/cm2. N‐off and N‐on DGTJFETs with 2.25 mm squared chip size and 9.5 μm cell pitch output 15 A and 20 A at gate voltage of 2.5 V and drain voltage of 5.0 V. The specificRONof the N‐off and N‐on DGTJFETs is at room temperature 8.1 m Ω cm2and 6.3 mΩ cm2, respectively, indicating that N‐off devices can be realized at the expense of a slight increase in specificRONof approximately 25%. DGTJFETs with a 13 μm drift layer doped to 5.0 × 1015cm–3are demonstrated with a breakdown voltage in the range of 1200 V to 1550 V at the wafer level with a leakage current below 10 μA. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)