bluuebunny/crossref_metadata_2025_split huggingface dataset:
Ten‐digit replantation with seven years follow‐up: A case report
Authors: Cong Haibo , Sui Haiming , Wang Chenlin , Wang Zhumin , Yang Qingmin , Wang Buxing 
Published: January 2010

AbstractIn this report, we present a case of successful replantation of 10‐digit complete amputation and results of postoperative rehabilitation in 7 years follow‐up. The rehabilitation program included psychotherapy, physical therapy, sensory re‐education, and measurements. At the 7 years postoperatively, the static two‐point discriminations of replanted digits ranged from 4 to 11 mm. Grasping powers ranged from 69 to 81 lb, and pinching powers ranged from 13 to 19 lb. The patient returned to the previous employment. Our experience has demonstrated that systemic postoperative rehabilitation and measurements could achieve satisfactory recovery of the sensory and motor functions of multiple‐digit replantation. © 2010 Wiley‐Liss, Inc. Microsurgery 30:405–409, 2010.
Equitable bandwidth allocation in content distribution networks
Authors: Luss Hanan 
Published: January 2010

AbstractApplications for content distribution over networks, such as Video‐on‐Demand (VOD), are expected to grow significantly over time. Effective bandwidth allocation schemes that can be repeatedly executed must be deployed since new programs are often installed at various servers while other are deleted. We present a model for bandwidth allocation in a content distribution network that consists of multiple trees, where the root of each tree has a server that broadcasts multiple programs throughout the tree. Each network link has limited capacity and may be used by one or more of these trees. The model is formulated as an equitable resource allocation problem with a lexicographic maximin objective function that attempts to provide equitable service performance for all requested programs at the various nodes. The constraints include link capacity constraints and tree‐like ordering constraints imposed on each of the programs. We present an algorithm that provides an equitable solution in polynomial time for certain performance functions. At each iteration, the algorithm solves single‐link maximin optimization problems while relaxing the ordering constraints. The algorithm selects a bottleneck link, fixes various variables at their lexicographic optimal solution while enforcing the ordering constraints, and proceeds with the next iteration. © 2010 Wiley Periodicals, Inc. Naval Research Logistics, 2010
FLEXMG: A new library of multigrid preconditioners for a spectral/finite element incompressible flow solver
Authors: Rasquin M. , Deconinck H. , Degrez G. 
Published: January 2010

AbstractA new library called FLEXMG has been developed for a spectral/finite element incompressible flow solver called SFELES. FLEXMG allows the use of various types of iterative solvers preconditioned by algebraic multigrid methods. Two families of algebraic multigrid preconditioners have been implemented, namely smooth aggregation‐type and non‐nested finite element‐type. Unlike pure gridless multigrid, both of these families use the information contained in the initial fine mesh. A hierarchy of coarse meshes is also needed for the non‐nested finite element‐type multigrid so that our approaches can be considered as hybrid. Our aggregation‐type multigrid is smoothed with either a constant or a linear least‐square fitting function, whereas the non‐nested finite element‐type multigrid is already smooth by construction. All these multigrid preconditioners are tested as stand‐alone solvers or coupled with a GMRES method. After analyzing the accuracy of the solutions obtained with our solvers on a typical test case in fluid mechanics, their performance in terms of convergence rate, computational speed and memory consumption is compared with the performance of a direct sparse LU solver as a reference. Finally, the importance of using smooth interpolation operators is also underlined in the study. Copyright © 2010 John Wiley & Sons, Ltd.
Dual‐grid‐based tree/cotree decomposition of higher‐order interpolatoryH(∇∧, Ω) basis
Authors: Beig Davood Ansari Oghol , Leong Mook‐Seng 
Published: January 2010

AbstractThis work extends the zeroth‐order tree/cotree (TC) decomposition method into higher order (HO) interpolatory elements and develops the constraints operator required for the elimination of spurious solutions for general HOspectralbasis. Earlier methods explicitly enforce the divergence condition that requires a mixed finite element (FE) formulation with bothH1andH(∇∧) expansions and involves repeated solutions of thePoissonequation. A recent approach, which avoids the mixed formulation and the Poisson problem, uses TC decomposition of edgeDoFover the primal graph and construction of integration and gradient matrices. The approach is easily applied toHO hierarchicalelements but becomes quite complex for HO spectral elements. In the presence of internal DoF, it is difficult to utilize the primal graph for an explicit decomposition of the spectral DoF. In contrast, this work utilizes thedualgrid, resulting in an explicit decomposition of DoF and construction of constraint equations from a fixed element matrix. Thus, mixed formulation and the Poisson problems are avoided while eliminating the need for evaluation of integration and gradient matrices. The proposed constraints matrix is element‐geometry independent and possesses an explicit sparsity formulation reducing the need for dynamic memory allocation. Numerical examples are included for verification. Copyright © 2010 John Wiley & Sons, Ltd.
High potential of thin (<1 µm) a‐Si: H/µc‐Si:H tandem solar cells
Authors: Schicho S. , Hrunski D. , van Aubel R. , Gordijn A. 
Published: January 2010

AbstractSilicon based thin tandem solar cells were fabricated by plasma enhanced chemical vapor deposition (PECVD) in a 30 × 30 cm2 reactor. The layer thicknesses of the amorphous top cells and the microcrystalline bottom cells were significantly reduced compared to standard tandem cells that are optimized for high efficiency (typically with a total absorber layer thickness from 1.5 to 3 µm). The individual absorber layer thicknesses of the top and bottom cells were chosen so that the generated current densities are similar to each other. With such thin cells, having a total absorber layer thickness varying from 0.5 to 1.5 µm, initial efficiencies of 8.6–10.7% were achieved. The effects of thickness variations of both absorber layers on the device properties have been separately investigated. With the help of quantum efficiency (QE) measurements, we could demonstrate that by reducing the bottom cell thickness the top cell current density increased which is addressed to back‐reflected light. Due to a very thin a‐Si:H top cell, the thin tandem cells show a much lower degradation rate under continuous illumination at open circuit conditions compared to standard tandem and a‐Si:H single junction cells. We demonstrate that thin tandem cells of around 550 nm show better stabilized efficiencies than a‐Si:H and µc‐Si:H single junction cells of comparable thickness. The results show the high potential of thin a‐Si/µc‐Si tandem cells for cost‐effective photovoltaics. Copyright © 2010 John Wiley & Sons, Ltd.
Positive adjustment to breast cancer: development of a disease‐specific measure and comparison of women diagnosed from 2 weeks to 5 years
Authors: Boot Julia S. , Holcombe Christopher , Salmon Peter 
Published: January 2010

AbstractObjective: Many women describe ‘positive adjustment’ as a consequence of having breast cancer. It is unclear whether positive experiences reflect the absence of anxiety and depression or are part of a separate process of adjustment. Existing measures are not specific to breast cancer and may lack validity. Our aims were as follows: (1) to develop a valid questionnaire to measure positive adjustment after breast cancer; (2) to clarify whether it measures aspects distinct from anxiety and depression and (3) to suggest when positive adjustment typically emerges.Methods: A new measure, the Positive Adjustment Questionnaire (PAQ), was developed and completed by 156 women with breast cancer, allocated to three groups: 2–4 weeks; 6 months–2 years and 2–5 years post‐diagnosis. Other questionnaires were used to assess anxiety and depression and test the validity of the PAQ.Results: Principal components analysis of the PAQ identified four domains of positive adjustment; Fulfilment, Re‐evaluation, New ways of living and Valuing Life. Women questioned 2–5 years after diagnosis reported more fulfilment, re‐evaluation of life and new ways of living than those asked shortly after diagnosis. Differences in these aspects of positive adjustment remained after controlling for anxiety and depression.Conclusions: This study (1) provides a measure specific to positive adjustment following breast cancer; (2) suggests that positive adjustment is different from anxiety and depression and (3) indicates that positive adjustment is seen in women assessed 2–5 years after diagnosis. Psychological therapies that promote positive adjustment could enhance existing interventions that focus on reducing anxiety and depression. Copyright © 2010 John Wiley & Sons, Ltd.
Theoretical analysis and experimental results on the modulated photocarrier grating technique
Authors: Schmidt J. A. , Budini N. , Ventosinos F. , Longeaud C. 
Published: January 2010

AbstractWe present a complete theoretical analysis of the modulated photocarrier grating method (MPG). Our calculations show that the response of the sample will be not only a photocurrent modulated with the frequency f of the illumination, but also a response in dc and with frequency 2f. In order to put to test our calculations, we implement experimentally the MPG technique and we apply it to a hydrogenated amorphous silicon sample. We verify the existence of a response at frequency 2f, and we measure the relative intensity of this signal – which compares well with the result of our theoretical calculation. We also show that under certain conditions the density of states (DOS) at the quasi‐Fermi level for the majority carriers is related to the ratio of the MPG and modulated photoconductivity (MPC) signals. We present a simple formula that allows estimating the DOS as a function of energy by changing the temperature and the generation rate.
a‐Si:H temperature sensor integrated in a thin film heater
Authors: Caputo D. , de Cesare G. , Nascetti A. , Scipinotti R. 
Published: January 2010

AbstractIn this work we present an hydrogenated amorphous silicon (a‐Si:H) temperature sensor integrated in a thin film heater to perform biomolecular treatments. The system is fabricated on a microscope glass slide and includes a PolyDiMethylSiloxane (PDMS) chamber to confine the solution containing the sample and to avoid its evaporation. The heater is a 200 nm‐thick titanium/tungsten sputtered film with a serpentine shaped geometry that has been designed by a finite element simulator in order to obtain a spatial‐uniform temperature distribution. A uniformity better than 3% has been achieved over the surface of the structure. The temperature sensor is a n‐type/intrinsic/p‐type a‐Si:H stacked structure deposited by plasma enhanced chemical vapor deposition. The top and bottom contacts of the diode are made by the same metal utilized to fabricate the heater. The characterization of the sensor response has been performed both under forward and reverse bias condition. In reverse bias condition, at fixed voltage, the current–temperature curve exhibits an exponential behavior. In forward bias condition, at constant bias current, the voltage across the diode is linearly dependent on the temperature in the range 30–90 °C. In particular, using a constant bias current of 10 nA, a sensitivity around −3.3 mV/°C has been achieved.
A fully integrated optical detector with a‐Si:H based color photodiodes
Authors: Watty Krystian , Merfort Christian , Seibel Konstantin , Schöler Lars , Böhm Markus 
Published: January 2010

AbstractThe fabrication of an electrophoresis separation microchip with monolithic integrated excitation light source and variospectral photodiodes for absorption detection is presented in this paper. Microchip based separation techniques are essential elements in the development of fully integrated micro‐total analysis systems (µ‐TAS). An integrated microfluidic device, like an application specific lab‐on‐microchip (ALM) (Seibel et al., in: MRS Spring Meeting, San Francisco, USA, 20051), includes all components, necessary to perform a chemical analysis on chip and it can be used as a stand‐alone unit directly at the point of sampling. Variospectral diodes based on hydrogenated amorphous silicon (a‐Si:H) technology allow for advanced optical detection schemes, because the spectral sensitivity of the devices can be tailored to fit the emission of specific fluorescent markers. Important features of a‐Si:H variospectral photodiodes are a high dynamic range, a bias‐tunable spectral sensitivity and a very good linearity for the separation of mixed color signals.magnified imagePrinciple of ALM device
Structural models of a‐Si:H with a low defect concentration: A first‐principles molecular dynamics study
Authors: Jarolimek K. , de Wijs G. A. , de Groot R. A. , Zeman M. 
Published: January 2010

AbstractWe present a theoretical study of hydrogenated amorphous silicon (a‐Si:H) with a device quality hydrogen concentration of 11 at%. We used a first principle, parameters‐free method. The interaction between the atoms was treated quantum mechanically within the density functional theory approximation. Amorphous structures were prepared by cooling from the liquid phase. When using a cooling rate of 0.02 K/fs defect‐free structures were prepared. All silicon atoms were fourfold coordinated and there were no defect states in the band gap. The calculated short range order showed a good agreement with available neutron scattering measurements. We further calculated the formation energy of dangling bonds (DBs; threefold coordinated Si atom) in all three charge states (negative, neutral, and positive) as a function of the Fermi energy. Interestingly, the DB correlation energies can have both positive and negative values.
In situ measurements of surface (photo)voltage of roll‐to‐roll deposited thin film silicon solar cells
Authors: Van Aken Bas B. , Bakker Klaas J. , Heijna Maurits C. R. , Reid Dennis , Baikie Iain , Soppe Wim J. 
Published: January 2010

AbstractThe Kelvin probe is a non‐contact, non‐destructive vibrating capacitor device that measures the work function difference between a conducting sample and a vibrating tip. This contribution focuses on inline monitoring of the surface (photo)voltage of deposited silicon layers. We apply a custom‐built in situ Kelvin probe, operated in a roll‐to‐roll PECVD system, located immediately after the plasma zones to enable direct feedback to the controlling system of the plasma deposition. The surface photovoltage of nip thin film Si solar cells increases with increasing Voc. The results imply that inline, contactless measurements of the open‐circuit voltage are possible and that thus monitoring the doped layer quality during roll‐to‐roll production is feasible.
Investigation of crystalline orientation factor in microcrystalline silicon thin film deposition
Authors: Saito Kimihiko , Kondo Michio 
Published: January 2010

AbstractCrystalline orientation factors in microcrystalline silicon (µc‐Si) deposition are investigated by the triode‐plasma enhanced chemical vapor deposition (PECVD) method and conventional diode‐PECVD with optical emission spectroscopy (OES). The existence of more important factors for the orientation than the ion and the [H]/[SiHx] ratio on the growing surface is suggested from the SiH4 flow rate and the mesh‐electrode gap dependence of the orientation and the crystallinity in triode‐PECVD. Improvement of the crystallinity and the independent orientation of the following film on the seed‐layer offer the deposition radicals to act a key role for the crystalline growth direction. The oligomerized‐silane radical (probably dimeric radical) is proposed as an orientation factor by the relation of SiH* emission intensity on the deposition rate and the orientation.
The study of structural changes of amorphous Ge2Sb2Te5 films after annealing by optical absorption spectroscopy
Authors: Gotoh Tamihiro , Kawarai Kenta 
Published: January 2010

AbstractOptical absorption spectra of post‐annealed Ge2Sb2Te5 films were measured in the photon energy range from 0.5 to 3.5 eV. Optical absorption edge and Urbach slope parameter changed slightly with increase in annealing temperature and then abrupt changes occurred at around crystallization temperature. The band gaps of amorphous and cubic Ge2Sb2Te5 are 0.74 and 0.54 eV, respectively. The spectroscopic method is demonstrated to be suitable for evaluation of structural disorder and crystalline composition in phase‐change materials.
Medium‐range order in a‐Si:H films prepared from hydrogen diluted silane
Authors: Vavrunkova Veronika , van Elzakker Gijs , Zeman Miro , Sutta Pavol 
Published: January 2010

AbstractA systematic and detailed analysis of the influence of hydrogen (H2) dilution of silane (SiH4) on the structural properties of thin hydrogenated silicon (Si:H) films was carried out. The Si:H films were prepared by plasma enhanced chemical vapour deposition method at different H2 to SiH4 flow ratios (R) ranging from R = 0 to 40. A detailed structural analysis was carried out by X‐ray diffraction (XRD). In order to suppress the XRD intensity from the substrate, Si:H films were deposited onto a [100]‐oriented single‐crystalline silicon substrate and XRD was carried out with a thin‐film attachment. The XRD analysis demonstrated that the first diffraction peak in the Si:H films corresponded to the signal from silicon hydride (Si4H) ordered domains having tetragonal lattice structure. The full width of half maximum (FWHM) of the peak was decreasing with increasing H2 dilution, and remained nearly constant for R ≥ 20. The FWHM values confirmed that the Si:H films grown at R ≥ 20 are more ordered than films deposited at lower R. This trend was confirmed by the Raman spectroscopy from the analysis of the shift of the Raman amorphous peak.
Modulated surface textures using zinc‐oxide films for solar cells applications
Authors: Isabella Olindo , Moll Folkert , Krč Janez , Zeman Miro 
Published: January 2010

AbstractWe present modulated surface textures on glass substrates for improved light trapping in thin‐film silicon solar cells. The surface morphology, the roughness spectral distribution, and the scattering properties of the modulated surface‐textured substrates were characterized. We deposited solar cells on the modulated surface‐textured substrates and observed enhancement in the performance compared to a solar cell deposited on textured ZnO:Al (reference) substrates.
Growth of stable amorphous silicon films by gas‐flow‐controlled RF plasma‐enhanced chemical vapor deposition
Authors: Niikura Chisato , Matsuda Akihisa 
Published: January 2010

AbstractWe proposed a multi‐hollow discharge‐based plasma‐enhanced chemical vapor deposition (PECVD) technique with gas‐flow control for preparation of highly stable a‐Si:H films at high rates. The conditions for multi‐hollow plasma production have been optimized under radio‐frequency (RF) and low pressure conditions. The effectiveness of the gas‐flow control has been confirmed. As a result, a‐Si:H films with a SiH2 density of 0 at.% were successfully obtained at a relatively high growth rate of 0.27 nm/s by the novel technique, even under RF conditions. Further optimization of electrode configuration and deposition conditions would improve the growth rate of a‐Si:H films with high stability against light soaking.
Properties of interfaces in amorphous/crystalline silicon heterojunctions
Authors: Olibet Sara , Vallat‐Sauvain Evelyne , Fesquet Luc , Monachon Christian , Hessler‐Wyser Aïcha , Damon‐Lacoste Jérôme , De Wolf Stefaan , Ballif Christophe 
Published: January 2010

AbstractTo study recombination at the amorphous/crystalline Si (a‐Si:H/c‐Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechanisms, yielding an excellent interface defect density reduction by intrinsic a‐Si:H and tunable field‐effect passivation by doped layers. The potential of this model's applicability to recombination at other Si heterointerfaces is demonstrated. Solar cell properties of a‐Si:H/c‐Si heterojunctions are in good accordance with the microscopic interface properties revealed by modeling, that are, e.g., slight asymmetries in the neutral capture cross‐sections and band offsets. The importance of atomically abrupt interfaces and the difficulties to obtain them on pyramidally textured c‐Si is studied in combination with transmission electron microscopy.
Optimization of the in situ series connection of amorphous silicon solar modules on glass and foil substrates
Authors: Merz Rainer , Kistner Jens , Bouattour Mohamed Ali , Schubert Markus B. 
Published: January 2010

AbstractThin film solar cell technology allows for integrated monolithic series connection. During manufacturing of the cells, patterning steps in between the layer depositions form cell stripes and form the monolithic series connection between the front contact of one cell and the back contact of the adjacent one. The in situ series connection (ISSC) technology is not patterning in between the layer depositions but during the depositions. The patterning during layer deposition offers a couple of advantages over common laser scribing techniques. The in situ patterning does not break the vacuum or workflow to establish the monolithic series connection. The non‐thermal patterning enables the use of any flexible or rigid substrate like glass plates or polyethylene naphthalate (PEN) foil. We present the optimization of the wire pattering for plasma enhanced chemical vapor deposition and sputtering of highly conductive front contact material with three times improved shunt protection for an optimized production yield. Evaluating the interconnection losses of the ISSC projects interconnection losses down to 7% with optimized patterning. First amorphous silicon (aSi)‐based ISSC modules exhibit a total interconnection loss F = 15% on PEN foil. Moreover, for the first time we report on the successful implementation of the ISSC of aSi cells on rigid glass substrates.
Metastability in multicomponent oxide transistors
Authors: Jackson Warren B. , Hoffman Randy , Yeh Bao , Emery Tim , Koch Tim , McConica C. , Kwon Ohseung 
Published: January 2010

AbstractResults of an investigation of bias stress metastability of multicomponent, zinc–indium and zinc–tin oxides, transistors are investigated. The bias stress as a function of various dielectrics, passivation layers, and illumination conditions indicate that for negative gate bias stressing defects often are created in the semiconductor, probably near or at the surface, particularly if the devices are unpassivated. Oxygen vacancy formation is a likely candidate. For many dielectrics, the positive gate bias metastability appears to be dominated by charge trapping within the insulator. For zinc–tin oxide devices, the kinetics of the metastability follows a stretched exponential behavior with a power law dependence on gate voltage. Correcting for the observed Meyer–Neldel behavior, the activation energy of τ is about 1.2 eV for defect generation and the disorder energy from β is about 0.06 eV. By using passivation, the best gate dielectrics and annealing protocols, we have reduced the bias stress metastability to about 0.1 V for a 25,000 s stress at 22 °C.