bluuebunny/crossref_metadata_2025_split huggingface dataset:
Metabolic and cardiovascular outcomes in a group of adult patients with Turner's syndrome under hormonal replacement therapy
Authors: Giordano Roberta , Forno Daniela , Lanfranco Fabio , Manieri Chiara , Ghizzoni Lucia , Ghigo Ezio 
Published: March 2011

ObjectiveTurner's syndrome (TS) is a rare genetic disorder caused by complete or partial X chromosome monosomy in a phenotypic female, and it is associated with increased morbidity and mortality for cardiovascular diseases, impaired glucose tolerance, and dyslipidemia.Subjects and methodsIn 30 adult TS patients under chronic hormonal replacement therapy (HRT), 17β-estradiol (E2), body mass index (BMI), waist circumference, fasting glucose and insulin, homeostatic model assessment (HOMA) index, serum lipids, oral glucose tolerance test (OGTT), 24 h ambulatory blood pressure monitoring (ABPM), and intima–media thickness (IMT) were evaluated and compared with those in 30 age- and sex-matched controls (CS).ResultsNo difference was found between TS and CS in E2and BMI, whereas waist circumference was higher (P<0.05) in TS (77.7±2.5 cm) than in CS (69.8±1.0 cm). Fasting glucose in TS and in CS was similar, whereas fasting insulin, HOMA index, and 2 h glucose after OGTT were higher (P<0.0005) in TS (13.2±0.8 mUI/l, 2.5±0.2, and 108.9±5.5 mg/dl respectively) than in CS (9.1±0.5 mUI/l, 1.8±0.1, and 94.5±3.8 mg/dl respectively). Total cholesterol was higher (P<0.05) in TS (199.4±6.6 mg/dl) than in CS (173.9±4.6 mg/dl), whereas no significant differences in high-density lipoprotein, low-density lipoprotein, and triglycerides were found between the two groups. In 13% of TS, ABPM showed arterial hypertension, whereas IMT was <0.9 mm in all TS and CS. A negative correlation between insulin levels, HOMA index, or 2 h glucose after OGTT and E2was present in TS.ConclusionsOur results indicate that adult patients with TS under HRT are connoted by higher frequency of central obesity, insulin resistance, hypercholesterolemia, and hypertension.
Low Thermal Expansion Polyimides and their Applications
Authors: Numata Shunichi , Miwa Takao , Misawa Yutaka , Makino Daisuke , Imaizumi Junichi , Kinjo Noriyuki 
Published: March 2011

ABSTRACTThermal expansion coefficients (TECs) for polyimides differ very much depending on their chemical structures. Polyimdes with a rod-like structure as their backbone chains have lower TEC values. This is attributed to restraining of thermal expansion by rod-like molecules within intermolecular spaces, analogous to glass fibers in FRPs. The development of new polyimides which can closely match TECs of inorganic materials, such as metal or Si, can eliminate problems produced by thermal stress including warping, cracking or delamination.A new multilevel interconnection system using multilayered dielectrics consisting of low thermal expansion polyimide and inorganic materials has been proposed as one future technology for submicron VLSIs. Consequently, adhesiveless, high quality flexible printed circuit boards have been developed using a polyimide with the same TEC as copper foil. Their most significant property is a high dimensional stability after heat treatments, such as in a soldering process. Furthermore, they have very high adhesion strength at elevated temperatures.
Surface Migration of Low Molecular Weight Products Induced by Hygrothermal Fatigue in Epoxy Composites
Authors: Porto A. , Licciardello A. , Grasso D. , Cavallaro A. , Ferla G. , Puglisi O. 
Published: March 2011

ABSTRACTThe hygrothermal fatigue induces a complex phenomenology in the epoxy composites, with degradation of the linear coefficients of expansion.Epoxy composites, (novolac type, with SiO2 as filler, 75–85 % in weight) have been exposed to high temperature and high pressure moisture.A role important is played by the decomposition products formed during the aging. The Molecular Weight Distribution of these species has been followed by GPC and shows that there is partial depolymerization of the matrix after 24 h treatment time. It has been found that there is surface migration of low Molecular Weight species, both additives and decomposition products.
Characteristics of Polyethylene Thin Films Deposited by Ionized Cluster Beam
Authors: Usui Hiroaki , Numata Kouji , Dohmoto Hitoshi , Yamada Isao , Takagi Toshinori 
Published: March 2011

ABSTRACTPolyethylene thin films were deposited by the ionized cluster beam (ICB) method. The dielectric, resistivity, and breakdown field measurements showed that the ICB polyethylene films have excellent properties as an electrical insulator. The characteristics of Au/polyethylene/Si MIS diodes and MISFErs indicated that the ICB method can control the film-substrate interface property. The SIMS and ESCAan alyses showed that the ICB films have pure and stable chemical structure.
Polymer Encapsulated Microelectronics: Mechanisms of Protection and Failure
Authors: Anderson J. E. , Markovac V. , Troyk P. R. 
Published: March 2011

ABSTRACTThis research relates electrochemical failure of encapsulated microelectronics to surface moisture and to surface impurities. It draws heavily on “osmotic blistering”, a phenomenon known to produce corrosive failure of coated/painted metals [1].Leakage currents were measured on aluminum comb specimens as a function of relative humidity (RH) and temperature. We studied both bare combs and combs encapsulated with polysiloxane. 9.05 Vdc bias was used. We performed “contamination-by-design” experiments by deliberately introducing known amounts of NaCl, CaCl2 and sucrose onto the comb surface. Results were compared with corresponding data taken on well-cleaned specimens.Our principal findings are(1) Under dry conditions (RH<1%), small leakage currents are observed, ranging between 1-10 pA, which are insensitive to surface contamination levels. This implies that solid surface impurities Rer se do not promote electrochemical IC failure.(2) In extremely moist environments (RH>99%), surface-contaminated samples exhibit large leakage currents, ranging between 1 and 10 pA, that are roughly proportional to surface loading.(3) Different surface chemical compounds produce leakage-current steps at specific RH values, corresponding to solid-to-saturated solution transitions. For example, CaCI2 exhibits a transition at 21% RH; NaCl at 75% RH. At RH values above the transition, aqueous droplets, or vacuoles, were observed at surface sites occupied by solid deposits. The RH location of the transitions is largely unaffected by the presence or absence of polymer encapsulant. Leakage current steps were typically four to six orders of magnitude. The size of the step change varied between bare and encapsulated samples, and with surface loadings.(4) Variable temperature studies, performed at constant external water vapor, exhibited step decreases in leakage current at temperatures corresponding to saturated solution to solid transitions.(5) Sucrose, a nonelectrolyte, exhibited a leakage current step similar to those observed with CaCl 2 and NaCl. The size of the sucrose step change was significantly less than that observed with the electrolytes.(6) Electrochemical attack patterns varied among the different chemical compounds. For example, as shown in Fig. i, CaCl 2 exhibited anodic attack on alternate metallization lines. NaCl produced attack on all metallization lines.A full report of this work will appear elsewhere [2].
XPS Studies of Chromium Atoms Interacting with a PMDA-ODA Polyimide Surface
Authors: Haight R. , Silverman B. D. , White R. C. , Ho P. S. , Rossi A. R. 
Published: March 2011

ABSTRACTXPS data obtained during the initial stages of vapor deposition of chromium atoms onto a PMDA-ODA polyimide substrate is presented. Utilizing the results of molecular orbital calculations it is emphasized that the data is consistent with the formation of a charge transfer complex between the deposited metal atoms and the PMDA unit of the polymer.
The Promotion of Metal/Polymer Adhesion by Ion Beam Enhanced Deposition
Authors: Loh Ih-Houng , Hirvone J. K. , Martin J. R. , Revesz P. , Boyd C. 
Published: March 2011

ABSTRACTThe adhesion between metals and polymers is normally weak because they have drastically different electronic properties and interfacial bonding between metals and organic polymers is not readily affected by conventional coating techniques. The ion beam enhanced deposition (IBED) approach to improve adhesion focuses on the promotion of non-equilibrium “interdiffusion” and the creation of nucleation sites at the interfaces by low energy ion bombardment before and during metal deposition onto the polymer substrate.The results of our work show a significant improvement of adhesion at the metal (Au)/polymer (Teflon) interface.
Hydrogen Diffusion Between Plasma-Deposited Silicon Nitridepolyimide Polymer Interfaces
Authors: Nguyen Son Van , Kerbaugh Mike 
Published: March 2011

ABSTRACTA Nuclear Reaction Analysis (NRA) for Hydrogen technique was used to analyze the hydrogen concentration near Plasma Enchanced Chemical Vapor Deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF4 + O2 (8% O2) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate.
Materials and Processes At the Leading Edge of Photolithography
Authors: Taylor Gary N. 
Published: March 2011

ABSTRACTThe evolution of optical lithography to higher resolution patterning with step-and-repeat exposure methods has resulted from the precise fabrication of higher numerical aperture lenses, more precisely engineered and controlled mechanical and electrical subsystems, and new lenses, systems components and light sources which enable efficient printing at shorter wavelengths. Optical resist technology is undergoing a parallel evolution which is sharpening this capability even further. This paper outlines resist materials and processes at the leading edge of photolithography which will enable printing near and perhaps at the theoretical resolution limits. Subtopics discussed include resists sensitive to 248.4 nm excimer laser radiation, planarization methods, multilevel resist materials, and surface-functionalized plasma-developed resists. Finally, some conjecture about the practical resolution limits of optical lithography is presented.
Device Limitations
Authors: Keyes Robert W. 
Published: March 2011

ABSTRACTPackaging technology must deal with the inexorable trend of semiconductor technology towards higher levels of integration. Extrapolation of present trends suggests that chips with 100 million devices will be produced by the end of the present century. The ability of technology to miniaturize pin-outs will limit the utilization of all of these devices for purposes other than memory. This limitation plus problems of supplying power and removing heat means that chips for high-performance large systems, where the demand for pins follows a well known rule, will probably be limited to levels of integration less than 100,000. A model of large system wiring shows that large increases in the density of wires in system packages and in the rate at which heat can be removed will be needed.Less severe limitations apply to low cost applications. No large increase in power per chip can be anticipated. However, more powerful microprocessors will become available and will need increased amounts of input-output capability.
Materials and Structures for High Density I/O Interconnection Systems
Authors: Hong S. , Bravman J. C. , Weihs T. P. , Kwon O. K. 
Published: March 2011

ABSTRACTIn order to examine the use of a compliant cantilever structure as a contact scheme for a Multi-chip Interconnection System (MIS), multi-layer (metals and SiO2) cantilever beams were fabricated utilizing standard silicon processing and micromachining technologies. The mechanical behavior and electrical characteristics of the beams were investigated in order to establish their optimum dimensions for use in the MIS. During the course of this study, a new mechanical testing method for thin films has also been developed, which makes use of the same cantilever beam structure and a “Nanoindenter.” The Young's modulus and yield strength of thermally grown SiO2 and Au were measured using this technique.
A Study of Threshold and Incubation Behaviourduring Electromigration in thin Film Metallisation
Authors: Ross C. A. , Evetts J. E. 
Published: March 2011

ABSTRACTWe have previously described a microstructural model for electromigration in thin film metallisation, based on the concept of a stress-driven backwards flux opposing the forwards electromigration flux. The model can be used to calculate the build-up of stress in a metallisation track subject to arbitrary variations in electromigration flux, and to predict both the location of electromigration damage and incubation times before its appearance. In this paper we present an experimental study of electromigration behaviour in thin aluminium films on a niobium substrate and relate the results obtained to the model.
Mechanical Interconnects to Silicon Integrated Circuits
Authors: Steidel Charles A. 
Published: March 2011

ABSTRACTThere are three predominant interconnection technologies in use today for silicon integrated circuits: wire bonding; TAB (tape automated bonding); and C4 (controlled collapse chip connection). This paper briefly reviews each of these technologies for their strengths and weaknesses but focuses especially on wire bonding for single chip VLSI applications.Although wire bonding has been in widespread use ever since the invention of the small scale integrated circuit, the technique is still applicable for today's much larger and denser chips. With leadcounts up to 250 or even higher, many challenges are presented for equipment accuracy and speed and in package design, where novel techniques often are required to prevent the package from being the limiting factor in chip interconnection. These challenges are discussed in some detail.The paper concludes with a discussion of the future direction for mechanical connections as influenced by the technical and cost requirements of both the chip and the system in which it resides.
Esca and Sims Study of the Tetrabromobisphenol A Flame Retardant Diffusion to the Metal-Encapsulating Resin Interface
Authors: Torrisi Alberto , Cavallaro Angelo , Perniciaro Antonio , Ferla Giuseppe , Pignataro Salvatore 
Published: March 2011

ABSTRACTEpoxy resins of novolac type were molded to real copper and nickel plated copper framesin plant conditions. Three resins, formulated with different amount of tetrabromobisphenol A flame retardant, were used. The samples were stored at 200°C and then mechanically fractured at given time intervals. The surfaces obtained in the fracture have been analyzed by ESCA and Ga+ excited static and imaging SIMS. The kinetics of migration of the flame retardant to the resinmetal interfacial zone have been followed. The process was found to be diffusion controlled. Evidence of a redox reaction between the copper oxides found on the surface of the copper frame and the tetrabromobisphenol A was obtained. A copper diffusion through the Ni plating was observed in the case of the nickel plated frames. This phenomenon is most important at the point on the frame where the bromine concentration is higher.
Lateral Diffusion of NIAL3 and NI2AL3
Authors: Liu Joyce. C. , Mayer J. W. 
Published: March 2011

ABSTRACTPhase formation of NiAl3 and Ni2Al3 were studied individually in lateral diffusion couples A and B and simultaneously in sample C. The lateral growth of certain phases was controlled by varying the thickness ratios of Al to Ni at the source and thin film area. Parabolic dependence of the phase width on annealing time was found for NiAl3 and Ni2Al3 in the one-phase and two-phase growth at 425 °C.
Thermodynamics of Wetting by Liquid Metals
Authors: Yost F. G. , Romig A. D. 
Published: March 2011

ABSTRACTThe wetting of metal surfaces by molten solder is usually considered to be driven solely by an interfacial energy imbalance. The effect of chemical reactions on the wetting process is neglected, although the growth of an intermetallic layer in the wetted interface is commonly observed. In this work, the energy release during the incremental advance of a spreading solder droplet due to the interfacial energy imbalance and the formation of the intermetallic layer is calculated. The free energy of formation, ΔG, of the intermetallic layer is shown to be an important driving force for solder wetting.This approach to wetting has been applied to three systems, Cu-Sn, Cu-Sb and Cu-Cd. Liquid Sn, Sb and Cd react with solid Cu to form Cu6Sn5 (η), Cu2Sb (γ) and CuCd3 (ε), respectively. The free energy of formation, ΔG, for these intermetallic compounds is unknown experimentally, but can be calculated from the phase diagrams and other solution data using classical thermodynamics. These thermochemical calculations yield ΔG(η) = 465–3.09T for Cu-Sn, ΔG(γ) = −2500+0.54T for Cu-Sb and ΔG(ε) = −825+0.44T for Cu-Cd (cal/mole). These relations were evaluated at the respective melting temperatures and compared with the interfacial energy exchange. In all three cases the ΔG contribution was approximately two orders of magnitude larger than the interfacial energy exchange making it the dominant driving force for wetting kinetics.
Microstructure Development in Thin Films During Deposition from the Vapor Phase
Authors: Goyal D. , King A. H. , Bilello J. C. 
Published: March 2011

ABSTRACTTransmission electron microscope observations of the structures of single-phase metallic thin films have been made. Films prepared by sputtering and by thermal evaporation have been used and the structures have been evaluated quantitatively as a function of film thickness. It is found that the grain size in all films increases linearly with the film thickness, indicating that grain growth occurs during film deposition.
Stresses in Anisotropic Thin Films Bonded to Stiff Substrates
Authors: Lambropculos John C. , Wan Shih-Ming 
Published: March 2011

ABSTRACTNumerical techniques are used to calculate the stress concentrations arising near the interface of a single-crystalline film which is bonded to a stiff substrate. The film has cubic elastic symmetry, and it is characterized by the anisotropic constants A and H which show the deviation of the material frcm elastic isotropy. The normal to the film-substrate interface is taken to be along the 100, 111 or 110 directions. The inhomogeneous stresses near the free edge and the uniform stresses far from the free edge are calculated, and the effects of cubic elastic anisotropy and of film growth direction are established for material parameters typical of metallic and semiconducting films.
Integrated Optoelectronic Materials and Circuits for Optical Interconnects
Authors: Hutcheson L. D. 
Published: March 2011

ABSTRACTConventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs Integrated Optoelectronic Circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.
Lithium Niobate Packaging Challenges
Authors: Murphy E. J. , Holmes R. J. , Jander R. B. , Schelling A. W. 
Published: March 2011

ABSTRACTThe use of lithium niobate integrated optic devices outside of the research laboratory is predicated on the development of a sound packaging method. We present a discussion of the many issues that face the development of a viable, robust packaging technology. We emphasize the interaction of lithium niobate's physical properties with available packaging materials and technologies. The broad range of properties (i.e. electro-optic, piezo-electric, pyro-electric, photorefractive…) that make lithium niobate an interesting material in many device applications also make it a packaging challenge. The package design, materials and packaging technologies must isolate the device from its environment so that lithium niobate's properties do not adversely affect the device performance.
Thin Film Wiring for Integrated Electronic Packages
Authors: Wen Sheree H. , Kim Jungihl I. 
Published: March 2011

ABSTRACTAmong the available packaging technologies, thin film wiring is most suitable for high density package applications. This paper discusses the materials choices for the thin film wiring and some possible fabrication processes. The Cu- polymer or Cu- glass system are most promising from both performance and manufacturability perspectives. The interface adhesion and high inter layer interconnection resistance are critical problems for this structure. The use of a Cr, Cu blend structure as an interface layer will solve this problem. The microstructure, interface chemistry and the adhesion mechanisms of this blend layer are discussed.
Microstructure and Physical Properties of New SiC Materials with High Thermal Conductivity
Authors: Shinozaki S. S. , Hangas J. , Maeda K. 
Published: March 2011

ABSTRACTSilicon carbide materials with BeO addition (2 wt%) have the unique properties of high electrical resistivity, high thermal conductivity, and a thermal expansion coefficient close to that of silicon. The materials have been used as a chip carrier material for high power LSI packaging. Microstructures were correlated by means of analytical electron microscopy (AEM), with the physical properties. Generally, BeO particles are evenly distributed mostly at triple points and the grain growth is anisotropic and many grains are elongated with an aspect ratio of 2 or 3. The average grain size is measured to be around 5 μm and the morphology is typically thick tabular.AEM analysis has shown that large middle section of each SiC grain is mostly 6H polytype with a few or no stacking faults. On both sides of the 6H polytype, sheaths are formed, which consist of a large number of extremely thin 4H or other polytype lamellae. Along grain boundaries, no second phase formation is observed with a few exception of Be 2 C and impurity transition metal compounds lamellar formation.The results indicate that direct and clean contacts between 6H lamellae and BeO grain or other 6H lamellae form a path of high thermal conductivity. On the other hand, complex network of thin disordered (4H rich) lamellae doped with BeO forms the electrically high resistive path.