bluuebunny/crossref_metadata_2025_split huggingface dataset:
Porphyrin‐Containing Photosensitizer Obtained via Controlled Radical Polymerization
Authors: Karewicz Anna , Kłos Małgorzata , Zapotoczny Szczepan , Nowakowska Maria 
Published: November 2011

AbstractSummary: Block amphiphilic copolymer, poly(sodium styrenesulfonate‐block‐5‐(4‐acryloyloxyphenyl)‐10,15,20‐tritolylporphyrin) (PSSS‐block‐Po) was synthesized by nitroxide‐mediated controlled radical polymerization. The polymer is soluble in water and can absorb light in the visible region. The absorbed energy migrates between the porphyrin chromophores. The polymer chains form nanospheres in aqueous solution. Their interiors are highly hydrophobic and can effectively solubilize the large hydrophobic molecules of the various organic compounds (pyrene, azulene, rubrene). The polymer photosensitizes oxidation of organic compounds via photoinduced electron transfer and/or via formation of singlet oxygen. The effect of the architecture, chain properties and Po content on the photochemical properties of the porphyrin‐containing photosensitizers was also discussed.
Star‐Like Polymers of tert‐Butyl Acrylate via Controlled Radical Polymerization – Synthesis and Properties
Authors: Dworak Andrzej , Kowalczuk Agnieszka , Mendrek Barbara , Trzebicka Barbara 
Published: November 2011

AbstractSummary: Star polymers with different numbers and lengths of poly(tert‐butyl acrylate) arms were obtained by the core‐first method via atom transfer and iodine mediated radical polymerization. Multifunctional initiators with different numbers of initiating groups (from 3 to 28) were used to initiate the polymerization of tert‐butyl acrylate, yielding stars with different numbers of arms. The structures of the stars were characterized by NMR and gel permeation chromatography with refractive index, multiangle laser light scattering and viscosimetric detectors.
Linear High Molar Mass Polyglycidol and its Direct α‐Azido Functionalization
Authors: Gervais Matthieu , Brocas Anne‐Laure , Cendejas Gabriel , Deffieux Alain , Carlotti Stephane 
Published: November 2011

AbstractSummary: Linear polyglycidols with narrow chain dispersity and controlled high molar masses were prepared in a few hours by monomer‐activated anionic polymerization of protected monomers, ethoxyethyl glycidyl ether and tert‐butyl glycidyl ether, using a system composed of tetraoctylammonium bromide as initiator and triisobutylaluminum, used in 1.5 to 5‐fold excess compared to the initiator, as co‐initiator and monomer activator. This synthetic approach was shown to give various polyglycidol‐based copolyethers in particular with propylene oxide or butene oxide. α‐Azido,ω‐hydroxy‐poly(ethoxyethyl glycidyl ether) and other polyethers were directly prepared when tetrabutylammonium azide was used as initiator. Size exclusion chromatography and matrix‐assisted laser desorption/ionization time‐of‐flight characterizations as well as “click” reactions were used to demonstrate the efficiency of the functionalization.
Competitive Processes in Controlled Cationic Ring‐Opening Polymerization of Oxetane: a Lotka‐Volterra Predator‐Prey Model of Two Growing Species Competing for the same Resources
Authors: Bouchékif Hassen , Amass Allan J. 
Published: November 2011

AbstractSummary: The activation‐deactivation pseudo‐equilibrium coefficient Qt and constant K0 (=Qt x PaT1,t = ([A1]x[Ox])/([T1]x[T])) as well as the factor of activation (PaT1,t) and rate constants of elementary steps reactions that govern the increase of Mn with conversion in controlled cationic ring‐opening polymerization of oxetane (Ox) in 1,4‐dioxane (1,4‐D) and in tetrahydropyran (THP) (i.e. cyclic ethers which have no homopolymerizability (T)) were determined using terminal‐model kinetics. We show analytically that the dynamic behavior of the two growing species (A1 and T1) competing for the same resources (Ox and T) follows a Lotka‐Volterra model of predator‐prey interactions.
African American men significantly underestimate their risk of having prostate cancer at the time of biopsy
Authors: Hemmerich Joshua A. , Ahmad Faraz S. , Meltzer David O. , Dale William 
Published: November 2011

AbstractBackgroundGuidelines for prostate cancer (PCa) screening recommend physicians to have an informational discussion with patients. At the time of biopsy, patients should be informed of their heightened PCa risk, particularly African Americans (AA) who have significantly higher diagnostic and mortality risk. We tested predictors of patients' estimation of their likelihood of having PCa at the time of biopsy.MethodsA convenience sample of AA (n = 207) and white (n = 271) biopsy patients was surveyed at the time of prostate biopsy. Participants gave likelihood estimations of having PCa and data on their socio‐demographics, health, clinical status, and general and PCa‐specific anxiety. Binary logistic regressions tested for predictors of the patients' estimations and biopsy results.ResultsFifty‐one percent of AA men answered that they had a ‘0%’ likelihood of having PCa versus 19% of whites, whereas 57% of AA men had abnormal biopsies compared with 42% of whites. In logistic regressions, predictors of patient answers of 0% chance of PCa were AA ethnicity (OR = 4.50; p < 0.001), lower cancer‐specific anxiety (OR = 0.93; p < 0.01), less education (OR = 2.38; p < 0.05), and less urinary disturbance (OR = 0.70; p < .05). In a second regression, AA patients trended towards higher positive biopsy rates (OR = 1.43; p = 0.17).ConclusionsAt biopsy, AA more often estimated their likelihood of PCa as 0%, despite higher risks. Reasons for these low estimates and their potential contribution to poor treatment outcomes of AA patients require further investigation. Copyright © 2011 John Wiley & Sons, Ltd.
Partner (dis)agreement on moving desires and the subsequent moving behaviour of couples
Authors: Coulter Rory , van Ham Maarten , Feijten Peteke 
Published: November 2011

ABSTRACTMost studies of residential mobility decision‐making focus on the housing and neighbourhood satisfaction and pre‐move thoughts of individuals. This implicitly assumes that individual evaluations represent the wider household unit. However, if partners in a couple do not share evaluations of dwelling or neighbourhood quality or do not agree on whether moving is (un)desirable, ignoring these disagreements will lead to an inaccurate assessment of the strength of the links between moving desires and actual moves. Although overlooked in studies of residential mobility, partner disagreement plays an important role in the literature on family migration. This study is, therefore, one of the first to investigate disagreements in moving desires between partners and the subsequent consequences of such disagreements for moving behaviour. Drawing on British Household Panel Survey data and concepts from family migration studies, we find that disagreement about the desirability of moving is most likely where partners do not share perceptions of housing stress. Panel logistic regression models show that the moving desires of both partners interact to affect the moving behaviour of couples. Only 7.6% of couples move if only the man desires to move, whereas 20.1% of shared moving desires lead to a subsequent move. Copyright © 2011 John Wiley & Sons, Ltd.
Taming transport in InN
Authors: Ager Joel W. , Miller Nate R. 
Published: November 2011

AbstractThe large electron affinity of InN, close to 6 eV and the largest of any III–V semiconductor, creates a strong driving force for native donor formation, both in the bulk and at surfaces and interfaces. Moreover, all InN surfaces, regardless of crystal orientation or doping, have been observed to have a surface accumulation layer of electrons, which interferes with standard electrical measurements. For these reasons, until recently, it was uncertain whether or not compensation by donor defects would prevent “real” p‐type activity (i.e., existence of sufficiently shallow acceptors and mobile holes). A coordinated experimental approach using a combination of electrical (Hall effect) and electrothermal (Seebeck coefficient) measurements will be described that allows definitive evaluation of carrier transport in InN. In Mg‐doped InN films, the sensitivity of thermopower to bulk hole conduction, combined with modeling of the parallel conducting layers (surface/bulk/interface), enables quantitative measurement of the free hole concentration and mobility. In undoped (n‐type) material, combined Hall and thermopower measurements, along with a considering of the scattering mechanisms, leads to a quantitative understanding of the crucial role of charged line defects in limiting electron transport.
Point defect evolution in low‐temperature MOCVD growth of InN
Authors: Rauch Christian , Tuna Öcal , Giesen Christoph , Heuken Michael , Tuomisto Filip 
Published: November 2011

AbstractWe present a systematic study of the influence of the growth temperature on the point defect landscape in metal‐organic chemical vapor deposition (MOCVD) InN. State‐of‐the‐art InN layers were grown at temperatures from 500 to 550 °C and positron annihilation spectroscopy has been used to investigate the incorporation of vacancy defects during the growth process. We find that a decrease of the growth temperature below 550 °C leads to increasing free carrier concentrations and lower mobilities. At the same time, positron measurements observe an enhanced introduction of mixed In‐N vacancy complexes which gather preferentially at the interface between the InN layer and the GaN template. As the measured In vacancy concentration seems too low to promote efficient defect complexing, it suggests an increased formation of N vacancies at low temperature growth through insufficient cracking of NH3, which may be responsible for the observed increase in the free carrier concentration.
Raman‐scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy
Authors: Kim Jung Gon , Kamei Yasuhito , Kimura Atsuhito , Hasuike Noriyuki , Harima Hiroshi , Kisoda Kenji , Liu Yu Huai , Matsuoka Takashi 
Published: November 2011

AbstractImprovement of hexagonal InN film quality grown by metal‐organic vapor phase epitaxy has been challenged by changing the ambient‐gas pressure in 87–320 kPa (∼1–3 atm.). The growth temperature and the source‐gas supply ratio, the so‐called V/III ratio, were optimized at each ambient‐gas pressure to improve the film quality. Raman scattering characterization of InN phonon spectra showed great improvement in crystalline quality by increasing the pressure from 87 to 213 kPa, and furthermore to 320 kPa. This tendency was also confirmed by a structural characterization by X‐ray diffraction.
Photoreflectance study of InGaAs/AlAsSb coupled double quantum wells
Authors: Mozume T. , Gozu S. 
Published: November 2011

AbstractSixty periods of undoped InxGa1–xAs/AlAs0.56Sb0.44 CDQWs with extremely thin Al(Ga)As coupling barriers between the InGaAs wells were grown by molecular beam epitaxy. Photoreflectance (PR) spectra show interband transitions related to the heavy and light holes. After taking into account the strain‐induced and quantum confinement effects, the theoretical calculations are in fairly good agreement with the PR measurement results. The interband transition energy between ground subbands was redshifted as the In composition increased from 0.53 to 0.8, and reducing the AlAs coupling barrier thickness from three mono‐layers (MLs) to two MLs. Further shift of the CDQWs interband absorption edge energy toward a communication wavelength of 1.55 µm, while maintaining the intersubband transition energy at around 0.8 eV, was achieved using 2 MLs of Al0.4Ga0.6As coupling barriers and ln0.8Ga0.2As wells. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electrical characteristics of in‐plane gate logic devices
Authors: Komatsuzaki Yuji , Kyougoku Tomoteru , Saba Kenichi , Onomitsu Koji , Yamaguchi Hiroshi , Horikoshi Yoshiji 
Published: November 2011

AbstractLogic devices based on in‐plane gate (IPG) transistors are realized and their electrical characteristics are investigated. An IPG transistor connected in series with a resistance functions as a logic device. In this work, we present logic devices based on lateral gate structures using an additional IPG transistor as a variable resistance. The logic device is formed by an in‐plane double gate transistor connected in series with a self‐gating transistor as a variable resistance. It shows clear input‐output characteristics as a logic device. Either NAND or NOR operation can be achieved by changing the width of the self‐gating transistor. The operation of IPG logic devices depends on the resistance ratio of the two transistors. By using IPG transistors as variable resistances, the Hi/Low ratio is high enough for reliable logic operations. Furthermore, it is shown that the number of terminals and wiring are considerably reduced by using our IPG logic devices compared to logic devices based on CMOS transistors. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Structural properties of InAs‐based nanostructures grown on GaAs(001) and GaAs(111)A by area selective epitaxy
Authors: Zander Marlene , Nishinaga Jiro , Iga Kazuki , Horikoshi Yoshiji 
Published: November 2011

AbstractArea selective epitaxy (ASE) of InAs on patterned SiO2/GaAs(001) and SiO2/GaAs(111)A substrates has been investigated for various In flux intensities and substrate temperatures TS by using migration enhanced epitaxy (MEE). Transmission electron microscopy (TEM) indicates a different behaviour in the strain relaxation mechanism for ASE grown InAs structures on GaAs(001) and those grown on GaAs(111)A. In case of InAs/GaAs(001) Moiré‐like fringes due to strain relaxation are visible up to at least 35 nm in the InAs dot structure, while for InAs/GaAs(111)A the Moiré‐like fringes are confined at the interface. Furthermore, electron dispersion spectroscopy (EDS) showed a relatively high In concentration below the interface for InAs/GaAs(001) indicating the formation of a reaction layer even for structures grown at a low TS of 460 °C. For InAs on GaAs(111)A grown under the same conditions, almost no In was detected below the interface (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Near‐field photoluminescence spectroscopy of CdTe/Cd0.75Mn0.25Te tilted superlattices
Authors: Harada Yukihiro , Kita Takashi , Matsuda Kazunari , Kanemitsu Yoshihiko , Mariette Henri 
Published: November 2011

AbstractWe have studied the broadened emission lines of CdTe/Cd0.75Mn0.25Te tilted superlattices (TSLs) in contrast to the sharp emission lines of the nonmagnetic CdTe/Cd0.74Mg0.26Te TSLs by using near‐field scanning optical microscopy. The broadening of the photoluminescence (PL) spectra reflect the statistical fluctuation in the magnetization of Mn spins in the exciton magnetic polaron (EMP). The EMP PL strongly depends on the temperature; the line width of the EMP PL spectrum becomes narrow and the spatial distribution of the EMP PL intensity has been found to be reduced with rising the temperature from 5 to 11 K, because of annihilation of the EMP. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Comparison of InAs nanowire conductivity: influence of growth method and structure
Authors: Sladek Kamil , Winden Andreas , Wirths Stephan , Weis Karl , Blömers Christian , Gül Önder , Grap Thomas , Lenk Steffi , von der Ahe Martina , Weirich Thomas E. , Hardtdegen Hilde , Lepsa Mihail Ion , Lysov Andrey , Li Zi‐An , Prost Werner , Tegude Franz‐Josef , Lüth Hans , Schäpers Thomas , Grützmacher Detlev 
Published: November 2011

AbstractThe conductivity and crystal structure of nominally undoped InAs nanowires deposited by three different methods – 1. selective area metal organic vapor phase epitaxy (SA MOVPE), 2. gold assisted vapor liquid solid (VLS) MOVPE and 3. extrinsic catalyst free VLS molecular beam epitaxy (MBE) – is investigated. The influence on conductivity by stacking faults and different growth conditions is analyzed to determine the main impact. It is found that in terms of crystal structure, nanowires deposited by VLS MOVPE and VLS MBE behave similarly showing a zinc blende (ZB) phase while nanowires deposited by SA MOVPE feature a high density of stacking faults and a tendency to higher amounts of wurtzite (WZ) when grown with a decreased growth rate. However, the conductivity of wires deposited by VLS MOVPE is found to be much higher and statistically less dispersive compared to the other two wire types. An electrical similarity between nominally undoped wires in VLS MOVPE and previously reported intentionally doped wires in SA MOVPE is observed and discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Vapour phase synthesis of aligned molybdenum oxide nanowires at low temperature
Authors: Hong Kunquan , An Ming , Song Rui , Liu Liqing , Xu Mingxiang 
Published: November 2011

AbstractQuasi‐aligned molybdenum oxide nanowires are synthesized on silicon substrate by a thermal evaporation method, at a low temperature of 550 °C without using any catalyst. The diameter of these nanowires is about 100 nm, with steps in the top to form a sharp tip. The field emission measurement shows that these nanowires have strong electron field emission abilities, with high field enhancement factor and a relatively low turn‐on field of 2.16 V µm–1, suggesting that these molybdenum oxide nanowire arrays might be promising candidates as field emitters.magnified imageSEM images of the molybdenum oxide nanowires: (a) top view and (b) cross‐sectional view.(© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Tunable magnetic anisotropy of CoFe2O4 nanopillar arrays released from BiFeO3 matrix
Authors: Wang Zhiguang , Viswan Ravindranath , Hu Bolin , Harris V. G. , Li Jie‐Fang , Viehland D. 
Published: November 2011

AbstractWe deposited epitaxial BiFeO3–CoFe2O4 (BFO–CFO) self‐assembled thin films on (001) SrTiO3 (STO) substrates. We find that a combined annealing and etching process could remove the BFO matrix, thereby resulting in free‐standing CFO nanopillar arrays. Scanning electron and atomic force microscopies showed well separated CFO nanopillars, which were very similar to the original CFO ones in the self‐assembled structure. Finally, comparison of the magnetic hysteresis loops before and after removal of the BFO matrix showed a significant decrease of the coercive field and a dramatic decrease in the strain dominated magnetic anisotropy. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Isolation, composition, morphological and pasting properties of starches from rice cultivars grown in Nigeria
Authors: Ashogbon Adeleke Omodunbi , Akintayo Temitope Emmanuel 
Published: November 2011

AbstractThe isolation, composition, morphology and pasting properties of rice starches from different rice cultivars (N2R, Nerica II rice; IGR, Igbemo rice; ILR, Ilaje rice; and EAR, Efon Alaye rice) were studied. The starches were isolated from their flours by using a modified deproteination method in 0.1% NaOH. The highest starch yield of 65% was obtained from EAR with a residual protein of 0.41% and lowest starch yield of 45.70% from IGR with a residual protein of 0.42%. The AAM concentration of rice starches ranged from 21.88 to 26.04%. The sizes of the starch granules obtained from SEM were between 3 and 8 µm, some of the granules were individual (single) while others were fused (compound granules). The starch granules were small, polygonal and irregular in shape. The pasting parameters were evaluated using rapid visco analyser (RVA). Significant differences were observed in individual pasting parameters such as peak viscosity (PV), breakdown viscosity (BV), final viscosity (FV) and setback viscosity (SV). Cooked ILR starch had the highest PV (279.69 RVU; rapid viscosity units) and BV (52.50 RVU) when compared to the other starches. In contrast, N2R showed the highest FV (329.92 RVU) and SV (102.50 RVU), the latter due to the high concentration of AAM. The results revealed that cultivar has an effect on composition and pasting properties of rice starch.
Prognostic Relevance of Survivin in Pancreatic Endocrine Tumors
Authors: Ekeblad Sara , Lejonklou Margareta Halin , Stålberg Peter , Skogseid Britt 
Published: November 2011

AbstractBackgroundBetter prognostic markers are needed for pancreatic endocrine tumors. Survivin is an apoptosis inhibitor that is suggested to have a negative prognostic impact in several tumor types. Contradictory data exist, especially regarding the significance of a nuclear versus cytoplasmic location of survivin. The prognostic relevance of nuclear and cytoplasmic survivin expression in pancreatic endocrine tumors—controlled for the tumor Ki‐67 index, World Health Organization classification, and TNM stage—was investigated.MethodsA total of 111 patients treated at a tertiary referral center were retrospectively evaluated. Clinical data were gathered from medical records. Immunohistochemistry for survivin and Ki‐67 was performed on paraffin‐embedded tissue. Univariate and multivariate Cox analyses were performed.ResultsPatients with tumors that had <5% survivin‐positive nuclei had a mean survival of 225 months [95% confidence interval (CI) 168–281]. The corresponding figure for patients with 5 to 50% survivin‐positive tumor cell nuclei was 101 months [95% CI 61–140; hazard ratio (HR) 2.4; P < 0.01) and with >50% survivin‐positive nuclei 47 months (95% CI 24–71; HR 4.9; P < 0.001). Nuclear survivin expression in >50% of the tumor cells was an independent marker of a poor prognosis (HR 5.7; P < 0.01). Cytoplasmic survivin was not a significant prognostic factor in the multivariate analysis (HR 0.94; P = 0.90).ConclusionsHigh expression of nuclear survivin is a significant marker of a poor prognosis in patients with a pancreatic endocrine tumor.