bluuebunny/crossref_metadata_2025_split huggingface dataset:
The Effect of Ta and N Content on Mechanical Properties of DC Magnetron Sputtered fen and Fetan thin films
Authors: Deng Hong , Minor M. Kevin , Barnard John A. 
Published: April 2011

AbstractThis paper reports nanoindentation studies of the effect of Ta and N content on the mechanical properties of magnetically soft high moment FeN and FeTaN thin films prepared by dc magnetron sputtering. The FeTaN films were deposited on oxidized silicon (100) substrates with a series of FeTa targets in which the Ta content varies from 0 to 25wt%. The hardness (H) and Young's modulus (E) were measured by the Nano Indenter at nine indenter penetration depths: 20, 30, 40, 50, 60, 80, 100, 120 and 200 nm. The inherent hardness values of these films (no substrate effect) can be determined at penetration depths ranging from 20 to 60 nm for the 500 nm thick film used in the study. It was found that for the films deposited from the pure Fe target when the nitrogen flow rate increases from 0 to about 0.5 sccm the hardness of the film increases. However, a decreasing trend in hardness of these films was observed on further increasing the nitrogen flow rate. On the other hand, for the films prepared from the targets with the Ta content in the range of 5–15wt%, the hardness increases whenever Ta and N contents increase. These effects are clearly illustrated by 3-D and contour hardness and Young's modulus maps in this paper.
Microstructure and Mechanical Properties of Thin Al-Si-Ge Films
Authors: Kirchner S. , Kraft O. , Baker S. P. , Arzt E. 
Published: April 2011

AbstractThe mechanical properties are thought to play an important role in the performance of metallization materials for very large scale integration (VLSI) applications. From recent investigations on bulk materials it is known that Al-Si-Ge alloys can be very efficiently strengthened with only a small amount of the alloying elements. These alloys are potential candidates for future metallizations both because Si and Ge are compatible with the existing semiconductor technology, and because the resistivity is expected to be low.We present the first results of detailed characterizations of Al-Si-Ge thin films as a function of sputter conditions and heat treatments. The microstructure was characterized using x-ray diffraction and transmission electron microscopy. The kinetics of precipitation were studied using resistance measurements. Room temperature hardness was investigated using nanoindentation, and the mechanical properties at temperatures up to 240°C were examined using a substrate curvature method. The correlation between precipitate structure and film properties is discussed.
Adhesion Study of Dlc/Cr/Dlc and Dlc/Ti/Dlc Sandwich Structures on Hardened Steel
Authors: Müller U. , Hauert R. 
Published: April 2011

AbstractHard amorphous hydrogenated carbon, also referred to as diamond-like carbon films, are of technological interest as protection coatings due to their special properties such as high hardness, low friction, low wear, chemical inertness and electrical insulation. In this paper a study of the adhesion properties of multilayer structures composed of DLC/Metal/DLC/substrate is presented. As substrates a ball and roller bearing steel (DIN 1.3505, AISI 52100) was used. After Ar plasma cleaning of the substrate, DLC films were deposited from acetylene gas by rf plasma chemical vapor deposition at a self-bias of -600V. Metal films were deposited in the same chamber by DC magnetron sputtering.Adhesion of the different layers on the underlying layer was investigated by optical analysis of the coating at the border of Rockwell C indentations made into the substrate. If necessary, additional thin layers are deposited at the particular interface to ensure good adhesion. Further information on the interface quality and hence the adhesion is gained by a second optical analysis of the Rockwell indentation after exposure to ambient air for two weeks.The multilayer structure containing titanium as the metal layer showed no ablation of the coating around the indentation even after two weeks of exposure to ambient air. Chromium on the other hand already showed some ablation immediately after the indentation as well as still ongoing ablation after two weeks. These results are further corroborated by pin-on-disc tests.
Thermal- and Electromigration- Induced Stresses in Passivated AL- and Alsicu-Interconnects
Authors: Beckers D. , Schroeder H. , Eppler I. , Schilling W. 
Published: April 2011

AbstractAl and Al- alloys are commonly used as interconnect materials in integrated electronic devices. Stress induced voiding and degradation of metal lines by electromigration are closely related to the stresses in the lines.We have studied the strain and stress evolution during thermal cycling, isothermal relaxation and due to electromigration in passivated Al and AlSi(l%)Cu(0.5%) lines by X-Ray diffraction with variation of experimental parameters such as the aspect ratio and the electrical current density. Furthermore the extent of voiding and plastic shear deformation has been determined from the experimental metal strains with the help of finite element calculations.Main results are: 1) During thermal cycling the voiding is less than 2 ·10−3. The extent of plastic shear deformation increases with increasing line width and with decreasing flowstress. 2) During isothermal relaxation void growth occurs but no significant change in the plastic shear deformation. 3) An electric current in the lines causes no measurable additional change of the volume averaged stresses up to line failure.
Characterization of Sic Fibers by Soft X-Ray Photoelectron and Photoabsorption Spectroscopies and Scanning Auger Microscopy
Authors: Ma Qing , Mcdowell M. W. , Rosenberg R. A. 
Published: April 2011

AbstractSynchrotron radiation soft x-ray photoelectron and photoabsorption spectroscopy was used to characterize commercially obtained SiC fibers, which were produced by chemical vapor deposition (CVD) of SiC on a W core, followed by a carbon passivating layer. Depth profiling of the fiber through the carbon/SiC interface was done by making Si 2p and C ls core level PES and PAS, as well as scanning Auger microscopy, measurements following Ar+ sputtering. No significant changes in either photoemission or absorption or Auger line shapes were observed as a function of the depth, which indicates that there is no significant interfacial reaction. The line shapes of the carbonaceous coatings are predominately graphite-like and those of the CVD SiC coatings are microcrystalline, with presence of disorder to some extent in both cases.
Fermi Surface Mapping Using A Third Generation Light Source
Authors: Rotenberg Eli , Denlinger J. D. , Kevan S. D. , Goodman K. W. , Tobin J. G. , Mankey G. J. , Subramanian K. 
Published: April 2011

AbstractThe electronic states at the Fermi surface determine diverse properties such as magnetism, chemical bonding, and phonon-electron coupling. Using a conventional hemispherical analyzer at the ultraESCA beamline 7.0 of the Advanced Light Source, we have measured Fermi contours of the bulk and surface states of Cu(001) and Ag(001). For bulk states, we used uniform sampling in k-space by varying both the electron takeoff angle as well as the photon energy. Three-dimensional plots (in k-space) of bulk and surface states at the Fermi level can easily be achieved within one or two synchrotron shifts. Surface states, whose momentum is independent of k-perpendicular, are easily mapped if sufficiently dense angular sampling is performed. The states crossing the Fermi level at X in the surface Brillouin Zone of Cu(100) and Ag(100) are presented as examples.
A Study on the Metal Induced Lateral Crystallization Behavior of Amorphous Silicon Thin Films
Authors: Lee Byung-Il , Kim Kwang-Ho , Jeong Won-Cheol , Ahn Pyung-Su , Shin Jin-Wook , Joo Seung-Ki 
Published: April 2011

AbstractBasic mechanisms for both Ni- and Pd-metal induced lateral crystallization (MILC) are investigated. For both cases, tiny silicides were formed under the metal deposited area, and propagated toward amorphous Si films leaving crystallized Si behind at temperatures as low as 500 °C. Ni-MILC was influenced by Pd such that the lateral crystallization rate was enhanced, and the temperature for the lateral crystallization was lowered to 450 °C. Through TEM analysis and external stress experiments, it was found that the enhancement of the lateral crystallization rate was closely related to the compressive stress generated by the formation of nearby Pd2Si.
Effects of Reactive Gas Compositions on the Magnetic Properties and Microstructures of FeTaNC Films
Authors: Koh Tae-Hyuk , Shin Dong-Hoon , Choi Woon , Ahn Dong-Hoon , Nam Seoung-Eui , Kim Hyoung-June 
Published: April 2011

AbstractSoft magnetic properties and microstructure evolutions of FeTaNC films were investigated, and compared with those of FeTaN and FeTaC films. Effects of substrate species (glass vs. CaTiO3) on the magnetic properties were also investigated. Co-addition of N and C enhances the grain refinements and soft magnetism compared with N or C only addition. Good soft magnetic characteristics of coercivity of 0.17 Oe, permeability of 4000 (5 MHz), and magnetic flux density of 17 kG can be obtained in the FeTaNC films with the relatively wide process ranges. While these values appear to be similar to those of FeTaN films on glass substrate, the most distinctive difference between FeTaNC and FeTaN (or C) films is the effects of substrate. Whereas FeTaNC films show good magnetic characteristics on both glass and CaTiO3 substrates, FeTaN (or C) films show substantial degradation on the CaTiO3 substrate.
The Effect of Growth Temperature on Atomic Ordering in Gao.5 2Ino.48P Epilayers Grown on GaAs (001) Substrates by GS-MBE
Authors: Meenakarn C. , Staton-Bevan A. E. , Dawson M. D. , Duggan G. , Kean A. H. , Najda S. P. 
Published: April 2011

AbstractA Transmission Electron Microscopy (TEM), Photoluminescence (PL) and Photoluminescence Excitation Spectroscopy (PLE) investigation has been conducted on Ga0 52In0.48P epilayers, grown on GaAs(001) by Gas-Source Molecular Beam Epitaxy. Selected area diffraction in the TEM shows that epilayers grown at temperatures between 480°C and 535°C exhibit CuPt-type ordering with the antiphase domain size increasing with increasing growth temperature. PLE data shows that, in the temperature range 480°C to 535°C the band gap energy of Ga0.52In0-48P epilayers increases with increasing growth temperature from 1.971 to 2.003 (±0.001 eV). For high band gap optical data storage applications these values compare well with the highest band gap energies reported for epilayers grown by MOCVD.
TiSi2 Phase Transformation by Amorphization Techniques
Authors: Karlin Tord , Samuelsson Martin , Nygren Stefan , östling Mikael 
Published: April 2011

AbstractULSI packing density calls for sub-micron line widths, but on n-type polysilicon this can lead to incomplete titanium silicide C49 to C54 phase transformation after a conventional two step rapid thermal anneal (RTA). This study compares three different ion beam amorphization techniques: preamorphization, ion beam mixing and silicide amorphization, aiming at a complete phase transformation for submicron silicide lines. For preamorphization, an arsenic implantation at moderate energies (35–75 keV) was used to amorphize the top layer of the polysilicon prior to the titanium deposition. Ion beam mixing used a high-energy (200 keV) arsenic implantation after the titanium deposition to create an amorphous mix of silicon and titanium. These two methods did, each by themselves, lead to an increased fraction of C54 silicide grains already during the low temperature RTA, and a complete phase transformation during the subsequent high temperature RTA. Both methods lowered the thickness difference between titanium silicide on p- and n-type silicon. Silicide amorphization with 75 keV arsenic or 100 keV antimony, applied before the second RTA, did not significantly improve the silicide phase transformation.
Doping properties of the Ion-Beam-Sputtered SiGe Film
Authors: Qi Wen-Jie , Wang Zhi-Sheng , Gu Zhi-Guang , Ru Guo-Ping , Jialig Guo-Bao , Li Bing-Zong 
Published: April 2011

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.
Atomic Force Microscopy Investigation of the Morphology of A UV Photodefined Palladium Activation Layer on Alumina Ceramic and the Nucleation of Electroless Copper at the Activated Sites
Authors: Lafferty E. J. , Macauley D. J. , Kelly P. V. , Crean G. M. 
Published: April 2011

AbstractThe surface morphology of a UV excimer lamp photodefimed palladium activation layer and its effect on subsequent electroless copper deposition have been studied on 96% alumina substrates using an atomic force microscope (AFM). The morphology of the activation layer and the density of the palladium catalyst are important factors affecting the initial stages of the electroless deposition and the microstructure of the copper film. Under activation conditions on which a subsequent electroless copper deposit exhibited good adhesion characteristics, the palladium activation was found to have a nodular structure with a large distribution of palladium particle sizes of the order of 10 nm at grain boundaries and the edges of grain steps, with smaller activation particles observed on smoother areas of the alumina grains. The influence of substrate morphology on the nature of the catalytic sites and thence, on the nature of the subsequently deposited metal was investigated, both at the nucleation stage, and as the autocatalytic electroless deposition reaction proceeded. The recrystallisation of the initial electroless deposit, the morphology of the resulting copper films and its relationship to catalyst particle size are reported. The principal determining factors in the substrate and activation layer morphology which control the microstructure of the electroless copper deposit are discussed.
Characterization of Platinum films Deposited by a Two-Step Magnetron Sputtering on SiO2/Si Substrates
Authors: Lee Dong-Su , Park Dong-Yeon , Kim Min Hong , Chun Dong-Il , Ha Jowoong , Yoon Euijoon 
Published: April 2011

AbstractIn this study, defect-free Pt films with good adhesion were deposited on SiO2/Si substrates by a two-step magnetron sputtering. This method consists of the first sputtering step using Ar/O2 gas mixture and the second step using Ar. After two-step deposition, an annealing process was followed at 600-1,000 °C in ambient atmosphere. In the first step, oxygen containing Pt films were deposited. Oxygen incorporated in the Pt films completely diffused out during the high temperature annealing. After the annealing process, the film became dense without catastrophic failures such as hillock, pinhole or buckling. Adhesion strength of films produced by this process was good enough to pass a tape test. It is believed that the good adhesion and the observed microstructural evolution are related to the oxygen in Pt films introduced during the first sputtering step. Adhesion, microstructural evolution and the role of oxygen in Pt films are briefly discussed.
Formation and Phase Transformation of R. F. Sputter Deposited NON-BCC 6-A15 Chromium Thin Films
Authors: Chu J. P. , Chang J. W. , Lee P. Y. , Wu J. K. 
Published: April 2011

AbstractFormation and phase transformation of non-BCC δ-A15 Cr thin films prepared by R. F. magnetron sputtering have been characterized. Processing parameters such as working pressure, deposition time and temperature were found to affect the formation of δ-A15 Cr films. Using differential scanning calorimetry, we have demonstrated for the first time that the phase transformation of the δ-A15 Cr phase to the equilibrium c-BCC Cr phase is an irreversible, exothermic, first-order transition. At a heating rate of 10°C/min, the onset and peak temperatures of transformation were determined to be 428°C and 437°C, respectively. Our post-deposition annealing study by X-ray diffraction further verified the occurrence of transformation.
Epitaxial Batio3 and Knbo3 Thin Films On Various Substrates for Optical Waveguide Applications
Authors: Beckers L. , Zander W. , Schubert J. , Leinenbach P. , Buchal Ch. , Fluck D. , Gügnter P. 
Published: April 2011

AbstractTechnologically interesting optical materials such as BaTiO3 and KnbO3 are difficult to grow as single crystals of large dimensions. Thin film techniques can overcome this problem by synthesizing these materials on commercially available substrates. We demonstrate the deposition of single crystalline BaTiO3 and KnbO3 on MgO, SrTiO3 and buffered MgO substrates by Pulsed Laser Deposition (PLD). The samples are characterized by Rutherford Backscattering Spectrometry / Channeling (RBS/C), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM). We found excellent crystalline quality, confirmed by RBS/C minimum yield values of 2 % and a FWHM of 0.36° of the BaTiO3(002) rocking curve. Even films of a few microns thickness have been grown without loss of crystalline perfection, and all films show very flat surfaces. The RMS roughness of a 950 nm BaTiO3 film was found to be 1.1 nm.
Cadmium Sulfide Films Deposited by Cw Laser Evaporation Technique
Authors: Moss R. W. , Harris J. , Lee D. H. , Condrate R. A. , Wang X. W. , Stoltz S. M. , Petrou A. 
Published: April 2011

AbstractCadmium Sulfide (CdS) thin films had been fabricated by a laser deposition technique. Our previous results indicated that the hexagonal structured films could be formed at a substrate temperature of 400 C or higher. Reducing the temperature to 200 C or lower, cubic dominant films had been fabricated. To further understand the effects of other deposition parameters, CdS films were deposited at 30 C in this study. Crystal structures of the films were analyzed by Xray diffraction (XRD) and Transmission Electron Microscopy (TEM). It was found that the processing windows for the cubic films were very limited. As revealed by optical transmission measurements, the optical absorption edge of the cubic film was different from that of the hexagonal film.
Low Temperature Epitaxy of Si on Dihydride-Terminated Si (001): Energetic Versus Thermal Growth
Authors: Taylor M. E. , Atwater Harry A. , Murty M. V. Ramana 
Published: April 2011

AbstractPulsed laser deposition of Si on dihydride-terminated (l×1) Si (001) at low temperatures yields epitaxial layers, unlike molecular beam epitaxy. Si films were grown by ultrahigh vacuum pulsed laser deposition on the dihydride surface at substrate temperatures from 40 °C to 350 ° C. Epitaxial thickness and interface roughness were measured by high-resolution cross-sectional transmission electron microscopy and found to be comparable to known data for Si films grown by molecular beam epitaxy on monohydride-terminated (2×l) Si (001). Si films were grown at 200 °C by pulsed laser deposition on the dihydride surface at argon background pressures between 10− torr and 10−1 torr. Ion probe time of flight data was collected over the same pressure range. Comparison of the results suggests that loss of epitaxy is correlated with low incident energy. This, in conjunction with information on surface reconstruction obtained from reflection high-energy electron diffraction, suggests that the mechanism enabling epitaxy on the dihydride surface is Si subplantation, a mechanism only possible in growth with an energetic beam.
Control of the hydrogen content of diamond-like carbon films deposited using unbalanced magnetron sputtering
Authors: Seo S.-C. , Ingram D. C. 
Published: April 2011

AbstractThe possible sources of hydrogen contamination of Diamond-Like Carbon (DLC) films deposited using Unbalanced Magnetron (UBM) sputtering of carbon from a graphite target have been studied. Without deliberate introduction of hydrogen or hydrocarbon gas, magnetron sputtered DLC can contain significant amounts of hydrogen, from 4 to 23 %, by changing the base pressure (or residual gas pressure, rgp) of the deposition system from 3 × 10−6 to 4 × 10−5Torr. This hydrogen contamination contributes to a large change in the optical band gap (0.2 to 1.0 eV) and lowers the density of the films. The hydrogen content in the films comes from water vapor in the deposition system, mainly absorbed in the graphite target, which is dissociated and/or ionized in the plasma. Hydrogen gas has been introduced up to a pressure of 7 × 10−1Torr at a base pressure of˜1 × 10−1Torr in order to simulate high residual gas pressure conditions. The properties of the plasma and the films produced at high base pressures have been compared to those at a high partial pressure of hydrogen gas. For the plasma properties, the electron temperature, Te, and the ion density, ni, were measured by using a double Langmuir probe. The films were characterized by using Ultraviolet-Visible, Rutherford Backscattering/Elastic Recoil, and X-ray Photoelectron Spectroscopies (UV-VIS, RBS/ERS, and XPS).
Fast Soldering Reactions on Au Foils
Authors: Kim P.G. , TU K.N. 
Published: April 2011

AbstractWe have studied the wetting behaviors and interfacial reactions of Pb‐containing (63Sn‐37Pb, 95Pb‐5Sn) and Pb‐free solders (pure Sn, 96Sn‐4Ag, 57Bi‐43Sn, 77.2Sn‐20In‐2.8Ag) on Au foils in order to understand the role of Pb in Pb‐based solders. Surface morphology, wetting angle, and interfacial reaction of the solders were studied by Scanning Electron Microscopy (SEM) and Energy Dispersive X‐ray Analysis (EDX). Pb‐containing and Pb‐free solders (pure Sn, 96Sn‐4Ag, 77.2Sn‐20In‐2.8Ag) showed rough surfaces due to the precipitation of intermetallic compounds on the surface of the solder caps. The eutectic SnBi (57Bi‐43Sn) solder, however, showed a smoother surface. The wetting angle of the eutectic SnPb (63Sn‐37Pb), pure Sn, 96Sn‐4Ag, and 77.2Sn‐20In‐2.8Ag solders decreased significantly with reflow time, while the eutectic SnBi and 95Pb‐5Sn solders showed a much smaller decrease. A large amount of intermetallic compounds was formed throughout the entire region of the solder cap for the eutectic SnPb, 96Sn‐4Ag, 95Pb‐5Sn, and 77.2Sn‐20In‐2.8Ag, mainly due to the high solubility of Au in these solders. Slow intermetallic compound growth was observed for the eutectic SnBi solder.