bluuebunny/crossref_metadata_2025_split huggingface dataset:
The disintegrin contortrostatin in combination with docetaxel is a potent inhibitor of prostate cancer in vitro and in vivo
Authors: Lin Edwin , Wang Qingcai , Swenson Stephen , Jadvar Hossein , Groshen Susan , Ye Wei , Markland Francis S. , Pinski Jacek 
Published: May 2010

AbstractBACKGROUNDThere are few available treatments for hormone refractory prostate cancer. Through the inhibition of integrins, contortrostatin (CN) effects tumor cell growth directly as well as through the inhibition of angiogenesis. The effect of CN in combination with docetaxel on prostate cancer cell lines in vitro and in vivo is evaluated in the present study.METHODSFACS analysis of integrin expression, assessment of CN and docetaxel exposure on viability of plated cancer cells, and scratch test migration analysis were performed on PC‐3 prostate cancer cells. CN and docetaxel inhibition of both PC‐3 and CWR‐22 prostate cancer cell lines were evaluated in a mouse xenograft bone model. Angiogenic activity in tumors were assessed using IHC with antibodies to CD31.RESULTSCell culture experiments indicate that the combination of docetaxel and CN inhibits growth in an additive fashion. FACS analysis of PC‐3 cells shows expression of α5β1 and αvβ5 integrins, but little expression of the αvβ3. CN showed complete inhibition of PC‐3 migration in cultures grown on matrigel plates. In mice xenograft bone models, CN with docetaxel showed increased inhibition of both PC‐3 and CWR‐22 derived tumors. Analysis of treated xenograft tumors showed significantly decreased expression of CD31 indicating suppression of angiogenesis. Prostate 70:1359–1370, 2010. © 2010 Wiley‐Liss, Inc.
Improved therapeutic responses for liposomal doxorubicin targeted via thrombospondin peptidomimetics versus untargeted doxorubicin
Authors: Rivera‐Fillat M. P. , Reig F. , Martínez E. M. , Grau‐Oliete M. R. 
Published: May 2010

AbstractNew therapies in cancer treatment are focusing on multifaceted approaches to starve and kill tumors utilizing both antiangiogenic and chemotherapeutic compounds. In this work, we searched for a peptide vector that would home liposomes both to endothelial and tumor cells. [Abu6]TSPB and [Abu6]TSPA, aspartimide analogs of natural sequences of TSP‐1 and TSP‐2, respectively, were tested for adhesion of tumor and endothelial cells, in vivo and in vitro antiangiogenic effects, and in vivo antitumor action. Both peptides support the adhesion of both types of cells, but only [Abu6]TSPA inhibits the angiogenesis in vivo, and [Abu6]TSPA‐targeted L‐DOX decreases by 58% (P < 0.008) the HT29 tumor growth in nude mice. The improvement in the doxorubicin antitumor effect should be attributed to the antiangiogenic effect of [Abu6]TSPA, since [Abu6]TSPB, despite being a good ligand for both cell types, had no effect on tumor growth. Copyright © 2010 European Peptide Society and John Wiley & Sons, Ltd.
The human male reproductive tract antimicrobial peptides of the HE2 family exhibit potent synergy with standard antibiotics
Authors: Yenugu Suresh , Narmadha Ganapathy 
Published: May 2010

AbstractReproductive tract infections pose a serious threat to health and fertility. Due to the emergence of antibiotic resistant pathogens, antimicrobial proteins and peptides of the reproductive tract are extensively characterized in recent years toward developing newer strategies to treat genital tract infections. Pathogen growth inhibition using a combination of naturally occurring male reproductive tract antimicrobial peptides and commonly used antibiotics has not been reported. Checker board analyses were carried out to determine the nature of interaction (synergistic, additive and antagonistic) between HE2α and HE2β2 peptides and the commonly used antibiotics. Using Escherichia coli as the target organism, the minimal inhibitory concentration and fractional inhibitory concentration indices were determined. We demonstrate for the first time that the human male reproductive tract antimicrobial peptides HE2α and HE2β2 act synergistically with the commonly used antibiotics to inhibit E. coli growth. A combination of HE2α and HE2β2 peptides resulted in an additive effect. Interestingly, the synergistic effects of HE2 peptides were highest with doxycycline and ciprofloxacin, antibiotics generally used to treat epididymitis. Results of this study demonstrate the potential of endogenous HE2 peptides to be pharmacologically important in designing novel strategies to treat reproductive tract infections. Copyright © 2010 European Peptide Society and John Wiley & Sons, Ltd.
Effects on in vitro and in vivo angiogenesis induced by small peptides carrying adhesion sequences
Authors: Conconi Maria Teresa , Ghezzo Francesca , Dettin Monica , Urbani Luca , Grandi Claudio , Guidolin Diego , Nico Beatrice , Di Bello Carlo , Ribatti Domenico , Parnigotto Pier Paolo 
Published: May 2010

AbstractIt is well known that tumor growth is strictly dependent on neo‐vessel formation inside the tumor mass and that cell adhesion is required to allow EC proliferation and migration inside the tumor. In this work, we have evaluated the in vitro and in vivo effects on angiogenesis of some peptides, originally designed to promote cell adhesion on biomaterials, containing RGD motif mediating cell adhesion via integrin receptors [RGD, GRGDSPK, and (GRGDSP)4K] or the heparin‐binding sequence of human vitronectin that interacts with HSPGs [HVP(351–359)]. Cell adhesion, proliferation, migration, and capillary‐like tube formation in Matrigel were determined on HUVECs, whereas the effects on in vivo angiogenesis were evaluated using the CAM assay. (GRGDSP)4K linear sequence inhibited cell adhesion, decreased cell proliferation, migration and morphogenesis in Matrigel, and induced anti‐angiogenic responses on CAM at higher degree than that determined after incubation with RGD or GRGDSPK. Moreover, it counteracted both in vitro and in vivo the pro‐angiogenic effects induced by the Fibroblast growth factor (FGF‐2). On the other hand, HVP was not able to affect cell adhesion and appeared less effective than (GRGDSP)4K. Our data indicate that the activity of RGD‐containing peptides is related to their adhesive properties, and their effects are modulated by the number of cell adhesion motifs and the aminoacidic residues next to these sequences. The anti‐angiogenic properties of (GRGDSP)4K seem to depend on its interaction with integrins, whereas the effects of HVP may be partially due to an impairment of HSPGs/FGF‐2. Copyright © 2010 European Peptide Society and John Wiley & Sons, Ltd.
Synthesis of pathological and nonpathological human exon 1 huntingtin
Authors: Singer David , Zauner Thomas , Genz Maika , Hoffmann Ralf , Zuchner Thole 
Published: May 2010

AbstractHuntington's disease (HD) is a neurodegenerative disorder that affects approximately 1 in 10 000 individuals. The underlying gene mutation was identified as a CAG‐triplet repeat expansion in the gene huntingtin. The CAG sequence codes for glutamine, and in HD, an expansion of the polyglutamine (poly‐Q) stretch above 35 glutamine residues results in pathogenicity. It has been demonstrated in various animal models that only the expression of exon 1 huntingtin, a 67‐amino acid‐long polypeptide plus a variable poly‐Q stretch, is sufficient to cause full HD‐like pathology. Therefore, a deeper understanding of exon 1 huntingtin, its structure, aggregation mechanism and interaction with other proteins is crucial for a better understanding of the disease. Here, we describe the synthesis of a 109‐amino acid‐long exon 1 huntingtin peptide including a poly‐Q stretch of 42 glutamines. This microwave‐assisted solid phase peptide synthesis resulted in milligram amounts of peptide with high purity. We also synthesized a nonpathogenic version of exon 1 huntingtin (90‐amino acid long including a poly‐Q stretch of 23 glutamine residues) using the same strategy. In circular dichroism spectroscopy, both polypeptides showed weak alpha‐helical properties with the longer peptide showing a higher helical degree. These model peptides have great potential for further biomedical analyses, e.g. for large‐scale pre‐screenings for aggregation inhibitors, further structural analyses as well as protein–protein interaction studies. Copyright © 2010 European Peptide Society and John Wiley & Sons, Ltd.
Growth of GaN crystals by Na flux LPE method
Authors: Mori Y. , Kitaoka Y. , Imade M. , Kawamura F. , Miyoshi N. , Yoshimura M. , Sasaki T. 
Published: May 2010

AbstractHigh‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux method. The carbon doping into the solution and the forced induction of solution flow are effective to control them. We also present some attempts for improving the quality of seed substrate for fabrication of boule‐sized bulk GaN crystals.
Optical gain and gain saturation of blue‐green InGaN quantum wells
Authors: Sizov Dmitry , Bhat Rajaram , Napierala Jerome , Gallinat Chad , Song Kechang , Allen Donald , Zah Chung‐en 
Published: May 2010

AbstractUsing varied stripe length method we systematically studied optical gain properties of blue‐green 3 nm InGaN QWs grown on c‐plane and (11−22) semipolar substrates. We determined that for such structures when the product of modal net gain at peak and stripe length exceeds factor 5 the gain saturation occurs due to depletion of pumped carriers. We then focused our attention on the gain in unsaturated conditions. We observed strong gain peak position blue shift with increase of pumping power for both substrate orientations due to quantum well state filling and for c‐plane due to piezoelectric field screening. Thus in order to increase lasing wavelength, minimizing optical losses, and maximizing modal gain are essential. We then found that for the semipolar QWs the gain at ∼500 nm was 2× higher with the stripe along [−1−123] direction despite the fact that at low pumping level the polarization switching of spontaneous emission resulted predominant E||[−1−123]. Finally we compared the semipolar and c‐plane QWs and found that the gain increase with pumping power of c‐plane QW is slower than that for semipolar QW in high gain direction while the transparency pumping power is lower for c‐plane.
GaN‐based nanowires: From nanometric‐scale characterization to light emitting diodes
Authors: Bavencove A.‐L. , Tourbot G. , Pougeoise E. , Garcia J. , Gilet P. , Levy F. , André B. , Feuillet G. , Gayral B. , Daudin B. , Dang Le Si 
Published: May 2010

AbstractWe studied and improved gallium nitride (GaN) nanowire (NW) based light emitting diodes (LEDs). PIN nanodiodes with and without InGaN/GaN multiple quantum wells (MQWs) were grown by molecular beam epitaxy (MBE) under N‐rich conditions on n‐doped Si(111) substrates. Thanks to the coalescence of the p‐type region of the NWs grown at low temperature, an autoplanarization process has been performed to obtain LEDs. Ni/Au top contacts have been deposited and patterned in order to bias the devices. A multiple‐scale characterization approach has been carried out through the comparison of localized cathodoluminescence (CL) and macroscopic electroluminescence (EL) spectra. It shows that the EL emission of PIN‐based LED at room temperature is related to defects in the p‐type region of the NWs. In order to enhance the radiative recombinations of NW‐based LEDs, we have first added InGaN/GaN MQWs, and secondly an electron blocking layer (EBL) has been inserted between the MQWs and the p‐type zone of the NWs. The LED with EBL exhibited an emission band at 420 nm. The blue‐shift of this emission band with increasing injected current is attributed to quantum confined Stark effect (QCSE) and evidences the radiative emission of InGaN/GaN MQWs. At 50 mA dc current, this improved NW‐based LED emits about 500 times more light than the heterostructure without EBL.
Growth of free‐standing non‐polar GaN on (100) γ‐LiAlO2 substrates by hydride vapor phase epitaxy
Authors: Chou Mitch M.C. , Hang D. R. , Chen Chenlong , Li Chu‐An , Lu Jin‐Wei , Lee Chun‐Yu , Tsay Jenq‐Dar , Hsu Chuck W. C. , Liu Calvin 
Published: May 2010

AbstractNonpolar free‐standing m‐plane GaN substrates were fabricated by hydride vapor phase epitaxy on (100) γ‐LiAlO2 substrates. The surface morphlogies were characterized by conventional optical microscopy. Structural properties of the GaN epilayers are investigated by X‐ray diffraction. Optical properties examined by photo‐luminescence spectroscopy exhibited a strong and sharp near near‐band‐edge emission peak at 3.43 eV, as well as a defect‐related yellow emission (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
“Step‐graded interlayers” for the improvement of MOVPE InxGa1‐xN (x ∼ 0.4) epi‐layer quality
Authors: Islam Md Rafiqul , Ohmura Y. , Hashimoto A. , Yamamoto A. , Kinoshita K. , Koji Y. 
Published: May 2010

AbstractThis paper reports the effect of step‐graded interlayers on MOVPE InGaN epi‐layer quality. Multilayer epitaxial structures consisting of Inx Ga1–xN layers with various compositions have been successfully grown. HRXRD measurements reveal that the insertion of step‐graded interlayers significantly reduces the twist while little effects are observed on tilt. Decreasing of twist with increasing the number of interlayers is found to be remarkable up to a certain value and then maintain nearly the same even with increasing the In composition. Different types of dislocation density have also been studied using the X‐ray diffraction analysis. Dislocation densities, particularly the edge dislocation density, decrease considerably with the insertion of interlayers for higher In composition. An edge dislocation of 3 × 1010 cm–2 is obtained for a smple with 0.25 In composition, that seems to come from the GaN layer beneath the step‐graded interlayers (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sublimation growth of nonpolar AlN single crystals and defect characterization
Authors: Satoh Issei , Arakawa Satoshi , Tanizaki Keisuke , Miyanaga Michimasa , Yamamoto Yoshiyuki 
Published: May 2010

AbstractSublimation growth of nonpolar AlN single crystals was investigated. The crystals were prepared in two methods: By slicing along the m ‐plane from c ‐plane‐grown thick crystals, and by heteroepitaxial growth on m ‐plane SiC substrates. Defects of the crystals were observed by high‐resolution transmission electron microscope. Dislocation density in AlN/SiC (0001) decreased significantly at about 1.5 μm above the interface, while stacking faults initiated from the interface toward the growth surface in AlN/SiC (1–100). With increasing crystal thickness, the dislocation density decreases up to 5 × 104/cm2 at the thickness of 10 mm. In the AlN single crystal grown on SiC (0001), it is noteworthy that the dislocations are localized around the AlN/SiC interface and that far fewer dislocations occur near the growth surface. High‐crystallinity AlN thick single crystals could be grown on SiC (0001) substrates. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Excitonic binding energies in non‐polar GaN quantum wells
Authors: Schulz Stefan , O'Reilly Eoin P. 
Published: May 2010

AbstractWe use a fractional dimensional space approach to calculate the excitonic binding energies in non‐polar GaN/AlGaN quantum wells (QWs) as a function of well width. We investigate the influence of the conduction band to valence band offset ratio on the excitonic binding energies. Because the exciton energy is mainly dominated by he eectron sngle‐particle staes, the calculated binding energies increase strongly with increasing conduction band offset, but the fractional increase in energy remains smaller than that found in previous studies of GaAs/AlGaAs structures, and is also smaller than binding energies deduced from recent experimental analysis of a ‐plane GaN/Al0.18Ga0.82N QWs. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
AlInN/InN metal oxide semiconductor heterostructure field effect transistor
Authors: Islam Md. Sherajul , Muhtadi Sakib M. , Hasan Md. Tanvir , Bhuiyan Ashraful G. , Islam Md. Rafiqul , Hashimoto A. , Yamamoto A. 
Published: May 2010

AbstractThis paper describes a novel AlInN/InN metal‐oxide‐semiconductor heterojunction field effect transistor (MOSHFET) as a promising candidate for future high performance microwave devices. The transport properties such as channel mobility and velocity‐field characteristics of the proposed AlInN/InN MOSHFET are calculated using Monte Carlo simulation. The DC and high frequency performances are assessed using an analytical model. The highest mobility is found to be 8.1×104 cm2V–1s–1 at a sheet carrier concentration of 8.79×1012cm–2. The peak drift velocity obtained for the device is 8.3×107 cm/s at the field of 66 kV/cm. The maximum cut‐off frequency, transconductance and drain current have been found 160 GHz, 280 mS/mm, and 879 mA/mm, respectively, for a gate length of 0.25 μm. The calculated results are in good agreement with the published results of GaN MOSHFET (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Optical band gap of h‐BN epitaxial film grown on c ‐plane sapphire substrate
Authors: Kobayashi Yasuyuki , Tsai Chiun‐Lung , Akasaka Tetsuya 
Published: May 2010

AbstractThe optical band gap of hexagonal boron nitride (h‐BN) epitaxial film is investigated by means of transmittance and reflectance measurements. We grew the h‐BN epitaxial film on c‐plane sapphire substrate by metalorganic vaper phase epitaxy. X‐ray diffraction and reflection high‐energy electron diffraction reveal that the h‐BN epitaxial film has a smooth surface, and the epitaxial relationship is found to be (0001)h‐BN|| (0001)sapphire with an in‐plane orientation relationship of [11$ \bar 2 $0]h‐BN|| [1$ \bar 1 $00]sapphire. The photon energy dependence of the squared absorption coefficient is linear, indicating a direct band gap in the h‐BN, and the optical band gap is determined to be 5.9 eV. The single‐phase h‐BN epitaxial film provides a more intrinsic value of the optical band gap than the values estimated for polycrystalline or pyrolytic BN. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Analysis of the energy‐based swing‐up control for the double pendulum on a cart
Authors: Xin X. 
Published: May 2010

AbstractDesigning and analyzing controllers for mechanical systems with underactuation degree (difference between the number of degrees of freedom and that of inputs) greater than one is a challenging problem. In this paper, for the double pendulum on a cart, which has three degrees of freedom and only one control input, we study an unsolved problem of analyzing the energy‐based swing‐up control which aims at controlling the total mechanical energy of the cart‐double‐pendulum system, the velocity and displacement of the cart. Under the energy‐based controller, we show that for all initial states of the cart‐double‐pendulum system, the velocity and displacement of the cart converge to their desired values. Then, by using a property of the mechanical parameters of the double pendulum, we show that if the convergent value of the total mechanical energy is not equal to the potential energy at the up–up equilibrium point, where two links are in the upright position, then the system remains at the up–down, down–up, and down–down equilibrium points, where two links are in the upright–down, down–upright, and down–down positions, respectively. Moreover, we show that each of these three equilibrium points is strictly unstable in the closed‐loop system by showing that the Jacobian matrix valued at each equilibrium point has at least one eigenvalue in the open right half plane. This shows that for all initial states with the exception of a set of Lebesgue measure zero, the total mechanical energy converges to the potential energy at the up–up equilibrium point. This paper provides insight into the energy‐based control approach to mechanical systems with underactuation degree greater than one. Copyright © 2010 John Wiley & Sons, Ltd.
Stochastic suppression and stabilization of delay differential systems
Authors: Wu Fuke , Hu Shigeng 
Published: May 2010

AbstractIn this paper, we investigate stochastic suppression and stabilization for nonlinear delay differential system \documentclass{article}\usepackage{amssymb}\usepackage[mathscr]{euscript}\footskip=0pc\pagestyle{empty}\begin{document}${\dot{x}}(t)=f(x(t),x(t-\delta(t)),t)$\end{document}, where δ(t) is the variable delay and f satisfies the one‐sided polynomial growth condition. Since f may defy the linear growth condition or the one‐sided linear growth condition, this system may explode in a finite time. To stabilize this system by Brownian noises, we stochastically perturb this system into the nonlinear stochastic differential system dx(t)=f(x(t), x(t−δ(t)), t)dt+qx(t)dw1(t)+σ|x(t)|βx(t)dw2(t) by introducing two independent Brownian motions w1(t) and w2(t). This paper shows that the Brownian motion w2(t) may suppress the potential explosion of the solution of this stochastic system for appropriate choice of β under the condition σ≠0. Moreover, for sufficiently large q, the Brownian motion w1(t) may exponentially stabilize this system. Copyright © 2010 John Wiley & Sons, Ltd.
Unified command and control for heterogeneous marine sensing networks
Authors: Schneider Toby , Schmidt Henrik 
Published: May 2010

AbstractSuccessful command and control (C2) of autonomous vehicles poses challenges that are unique to the marine environment, primarily highly restrictive acoustic communications throughput. To address this, the Unified C2 architecture presented here uses a highly compressed short message encoding scheme (Dynamic Compact Control Language or DCCL) to transfer commands and receive vehicle status. DCCL is readily reconfigurable to provide the flexibility needed to change commands on short notice. Furthermore, operation of multiple types of vehicles requires a C2 architecture that is both scalable and flexible to differences among platform hardware and abilities. The Unified C2 architecture uses the MOOS‐IvP autonomy system to act as a “backseat driver” of the vehicle. This provides a uniform interface to the control system on all the vehicles. Also, a hierarchical configuration system is used to allow single changes in configuration to propagate to all vehicles in operation. Status data from all vehicles are displayed visually using Google Earth, which also allows a rapid meshing of data from other sources (sensors, automatic identification system, radar, satellites) from within, as well as outside of, the MOOS‐IvP architecture. Results are presented throughout from the CCLNET08, SQUINT08, GLINT08, GLINT09, SWAMSI09, and DURIP09 experiments involving robotic marine autonomous surface craft (ASCs) and Bluefin, OceanServer, and NATO Undersea Research Centre (NURC) autonomous underwater vehicles (AUVs). © 2010 Wiley Periodicals, Inc.
The CRT is the scaling limit of unordered binary trees
Authors: Marckert Jean‐François , Miermont Grégory 
Published: May 2010

AbstractWe prove that a uniform, rooted unordered binary tree (also known as rooted, binary Pólya tree) with n leaves has the Brownian continuum random tree as its scaling limit for the Gromov‐Hausdorff topology. The limit is thus, up to a constant factor, the same as that of uniform plane trees or labeled trees. Our analysis rests on a combinatorial and probabilistic study of appropriate trimming procedures of trees. © 2011 Wiley Periodicals, Inc. Random Struct. Alg., 38, 467–501, 2011