bluuebunny/crossref_metadata_2025_split huggingface dataset:
59.2: The Contributions of Built‐in Light on the Readability in E‐paper Devices
Authors: Koizuka Tatsuya , Ishii Yuki , Kojima Takehito , Lege R. Paul , Miyao Masaru 
Published: July 2014

AbstractIn recent years, e‐readers have spread to many countries. Most of e‐readers have a reflective type of display called e‐paper. The general view is that under conditions of low illuminance, readability of the e‐paper display is poor. However, most recent e‐readers have a built‐in light system. This system would improve the readability of the e‐paper display under low illuminance conditions. We carried out experiments to evaluate the readability e‐paper devices using different systems. In the experiments, we conducted subjective evaluations under staged illuminance conditions by using English words. This study found that e‐paper devices with built‐in light under low illuminance condition were superior in terms of readability.
60.2: Efficient Light‐field Rendering using Depth Maps
Authors: Jeong Young Ju , Park Ju Young , Lee Jin‐Ho , Nam Dongkyung , Kuo C.‐C. Jay 
Published: July 2014

AbstractTo generate light‐field display images, a large amount of cameras or input images is required. This creates difficulties in designing both the acquiring system and memory storage. In this paper, we propose an efficient light‐field rendering algorithm using only a few input color and depth images. Using a depth map and estimated camera parameters, synthesized light‐field images were directly generated. With the use of this algorithm, the memory load is much lighter than with a conventional light‐field rendering algorithm. This algorithm is also much simpler than the image‐based rendering (IBR) algorithm because it does not involve the generation of many multiview images.
61.1: Invited Paper: How High‐Frame‐Rate Dual‐Projector 3D Made Its Movie Debut at the World Premiere of The Hobbit
Authors: Schmidt Terry 
Published: July 2014

AbstractPeter Jackson's The Hobbit, was the first wide release motion picture to be shot and projected in High Frame Rate 3D worldwide. This paper describes the significant technical differences that affected production, distribution and the projection of this new and superior image quality format. The world premiere in New Zealand, and subsequent events in Tokyo and London all used Dual Projection systems for increased luminance and highest 3D image quality possible.
61.5L: Late‐News Paper: Latest Developments in 3D Projection Mapping Systems
Authors: Anthony Roy , Robinson James , Salvini Paul , Tsintzouras George , Vieth John 
Published: July 2014

AbstractThe current state of the art in projection mapping can produce impressive results, but the workflow processes is quite primitive and complex. The goal was to set out to create a new workflow that is entirely constructed in a 3D environment, to make the 3D projection mapping experience more powerful, flexible, and easier to execute.
62.4L: Late‐News Paper: Light Emitting Memory: A Modular LED Panel with 10K True Color Frame Rate for 3D Display Applications
Authors: Zhou Bo , Hu X. Sharon , Chen Danny Z. 
Published: July 2014

AbstractLight Emitting Memory (LEM), a LED‐based panel, is presented to address several key challenges in 3D displays. Under $100, LEM achieves 10K true‐color frame rate, 64times32 resolution and 2.54mm pixel pitch. Compared with current state‐of‐the‐art implementations, LEM is effectively 10x faster, 16x smaller and 200x cheaper.
P‐1: Distinguished Poster: Fabrication of a Self‐Aligned ZrInZnO Thin‐Film Transistor Using Polypropylene Carbonate Solution
Authors: Tu Huynh Thi Cam , Inoue Satoshi , Nishioka Kiyoshi , Fujimoto Nobutaka , Karashima Shuichi , Shimoda Tatsuya 
Published: July 2014

AbstractTo fabricate a self‐aligned oxide semiconductor thin‐film transistor (TFT) using a solution process, we developed a novel diffusion method to dope ZrInZnO source and drain regions. In this method, Sn was allowed to diffuse into ZrInZnO from a solution of Sn mixed with polypropylene carbonate. The sheet resistance of the Sn‐containing ZrInZnO was reduced dramatically from 1 MΩ/□ to 6.8 KΩ/□. The self‐aligned ZrInZnO TFT exhibited a mobility of 20 cm2•V−1•s−1, a threshold voltage of 1 V, a subthreshold swing of 0.2 V/decade, and an on‐to‐off current ratio of 7.
P‐6: Static Reliability of Bridged‐Grain Poly‐Si TFTs
Authors: Zhang Meng , Zhou Wei , Chen Rongsheng , Zhao Shuyun , Wong Man , Kwok Hoi‐Sing 
Published: July 2014

AbstractThe characteristics of bridged‐grain (BG) poly‐Si thin film transistors (TFTs) with different BG periods and the static reliability of BG poly‐Si TFTs was examined and discussed. The characterizations show that the length of the sub‐channels mainly affects the on‐state current and the sub‐threshold characteristics. BG TFTs exhibit better hot carrier reliability, better self‐heating reliability, better negative bias temperature instability and good immunity against water.
P‐8: High Resolution a‐IGZO TFT LCD Panel Fabricated with Lower Annealing Temperature
Authors: Chiang Shin‐Chuan , Chen Yu‐Hsien , LU Ya‐Ju , WU Der‐Chun , Chen Po‐Lung , Tseng Kuo‐Hsing , Lu Wen‐Cheng , Lin Yi‐Hsien , Chen Ying‐Hui , Lid En‐Chih , Wang Chi‐Young , Chang Hsi‐Ming , Kang Li‐Hsin , Huang Yen‐Yu 
Published: July 2014

AbstractIn this paper, a‐IGZO TFT fabricated with sputtered process and annealed with low temperature is investigated. For all the prcoess, the maximum process temperature is as low as 300°C In addition, a 3.8 inch WVGA AM‐LCD driven by a‐IGZO TFTs is successfully demonstrated.
P‐10: Oxide TFT Fabrication by Nano‐Rheology Printing for Display Application
Authors: Koyama Hiroaki , Fukada Kazuhiro , Murakami Yoshitaka , Tue Phan Trong , Tanaka Shogo , Inoue Satoshi , Shimoda Tatsuya 
Published: July 2014

AbstractA nano‐rheology printing method was used to fabricate oxide thin‐film transistors (TFTs). This method utilizes the rheological properties of oxide precursor gels that are imprinted at an elevated temperature. TFTs designed for an active matrix array were successfully developed with high alignment accuracy, and the operation of its transistors was confirmed.
P‐18: A Low‐Power Scan Driver Using Depletion‐Mode a‐IGZO TFTs for High‐Resolution Displays
Authors: Ahn Seong‐Jin , Hong Seong‐Kwan , Kwon Oh‐Kyong 
Published: July 2014

AbstractIn this paper, a low‐power scan driver using depletion‐mode amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs) is proposed for high‐resolution displays. The proposed scan driver uses single clock signal to reduce the power consumption. This scan driver is simulated at the operating frequency of 153.6 kHz, which is the driving condition of 10.0‐inch wide quadruple extended graphics array (WQXGA, 1600 × 2560) display with the frame frequency of 60 Hz. The power consumption of ten stages of the proposed circuit is 0.39 mW. The proposed scan driver reduces the power consumption by 69% compared to the conventional scan driver.
P‐185L: Late‐News Poster: Polarization‐dependent Cylindrical Fresnel Lens Using the Reactive Mesogen Aligned by Nano‐groove Structure for 2D/3D Switchable Display
Authors: Lee Choelho , Kim Mugeon , Park Min‐Kyu , Park Ji‐Sub , Yoo Seong‐Hyeon , Kim Hak‐Rin 
Published: July 2014

AbstractWe present a well‐aligned reactive mesogen (RM) layer for polarization‐dependent Fresnel lens array using the nano‐groove structure made by the nano‐imprinting process. In our method, the RM layer is aligned on the reverse‐shaped Fresnel lens template by both the bottom liquid crystal (LC) alignment layer and the top nano‐groove layer. Due to the additional geometric alignment effect by the nano‐groove pattern, the photo‐cured RM layer can be well aligned irrespective of the complex surface structure. The nano‐groove structure on the photo‐cured RM layer can be used also for the LC alignment layer, which enables our combined structure of the polarization‐dependent RM lens layer and the polarization‐switching twist nematic (TN) LC layer.
P‐32: Mura Grade Evaluation Based on S‐CIELAB Color System
Authors: Asano Toshio , Kondo Takahiro , Maeda Shunji 
Published: July 2014

AbstractA unified method that evaluates uniformity grade for both luminance and color components has been developed. The S‐CIELAB color system is introduced to realize the visual perceptual characteristics. The experimental results showed strong relations between human sensory evaluation scores and the proposed mura index E values.
P‐174L: Late‐News Poster: Analysis of Fundamental Characteristics of Movement of Gaze and Hand when Holding E‐book in the Hand
Authors: Kikuchi Kei , Takahira Hideaki , Ishikawa Ryouichi , Wakamatsu Eki , Yamada Mitsuho 
Published: July 2014

AbstractWe developed a device to measure gaze and hand movement in a natural setting, such as while reading a book on a train or bus, and examined the cooperation among different types of movement while subjects were reading a book held in the hand.
P‐43: A Novel TFT Pixel Design for Active Matrix FLC with Grayscale Generation
Authors: Ho T. K. , Srivastava A. K. , Zhou W. , Chen R. S. , Lee C. Y. , Tseng M. C. , Chigrinov V. G. , Kwok H. S. 
Published: July 2014

AbstractMost active‐matrix FLC (AMFLC) devices were mainly realized in the form of LCOS display rather than in the TFT platform. This is because FLC devices normally require higher power and current to drive due to the larger pixel capacitance inhering from the small cell gap. Difficulty in generating grayscale also poses great challenge in commercializing AMFLC. We proposed a new TFT pixel design incorporating ESH FLC mode and BGTFT that successfully demonstrated AMFLC display with grayscale while preserving FLC's fast switching property.
P‐47: New Signal Processing Method to Improve Image Quality of RGBW Display
Authors: Kabe Masaaki , Nagatsuma Toshiyuki , Higashi Amane , Nakahara Tae , Ikeda Kojiro , Goto Fumitaka , Sakaigawa Akira 
Published: July 2014

AbstractIn this paper, the analysis and cause of image quality deterioration of an RGBW display is described. We have found that some distortions are caused by the combination of luminance distribution in a pixel scale and the human visual system. A newly‐developed RGBW calculation is proposed to solve this problem.
P‐52: A New Dynamic Headroom Controller using Storage Delay Time of BJT for Low Power Consumption of LED Backlight
Authors: Huh Jin , Jung Sang‐Duk , Cho Gyu‐Heong 
Published: July 2014

AbstractA new dynamic headroom control circuit for PWM LED drivers was proposed. Unlike conventional headroom control circuits, the proposed circuit uses storage delay time of BJTs. During off periods of the PWM driver, the proposed circuit senses the storage delay time from the base of BJT and minimizes the error between the sensed time and a reference delay time by adjusting the converter output voltage consecutively. A reverse recovery time of KTC4380 that determined by storage delay time and rising time was measured for different values of the VCE. Based on the measurement results, a reference pulse width was determined. By applying the reference determined, the proposed circuit was simulated by LTspice for verification and the simulation results showed that the proposed circuit well controlled the headroom voltage of the current source. Hence, the low power consumption could be achieved.
P‐53: Real‐Time Super Resolution for 4K2K TVs using Edge Directed Unsharp Masking Sharpening Method
Authors: Lin Fang‐Cheng , Peng Kuo‐Shiuan , Huang Yi‐Pai , Shieh Han‐Ping D. 
Published: July 2014

AbstractWe proposed an efficient edge directed unsharp masking sharpening (EDUMS) method to achieve real‐time super resolution for a 4K2K TV application. Based on conventional unsharp masking sharpening, EDUMS used simple and robust edge information to reproduce clear edge structure and vivid details of high resolution images with minimum ringing and jaggy artifacts.
P‐54: Image Segmentation Using Densely Constructed Mean‐Shift Vectors
Authors: Cho Hanjoo , Cho Sung In , Kim Young Hwan 
Published: July 2014

AbstractThis paper presents an image up‐scaling based approach to improving the quality of image segmentation that uses linked mean‐shift vectors [6]. While already effective, the segmentation quality of [6] can be further improved by strengthening the approximation process it uses. Making up for the weakness, the proposed algorithm remarkably outperformed existing competitor algorithms in segmentation quality by Probabilistic Rand Index [8] and Segmentation Covering [9] for Berkeley Segmentation Dataset [7].
P‐55: Adaptive Noise Reduction Method using Variable Window Size Based on Region Analysis
Authors: Lim Jae Hwan , Cho Sung In , Kim Young Hwan 
Published: July 2014

AbstractThis paper proposes a novel denoising method which uses a variable window size for noise filter depending on the results of local region analysis. The proposed method classifies local regions of a given noisy image as detail or smooth regions using a new parameter which is calculated by the ratio of estimated noise variance to local variance. The new parameter, a detail descriptor, represents the amount of image details in a local region. Then, the proposed method adaptively applies a noise reduction filter to remove image noise while preserving image details by regulating the filtering window size depending on the detail descriptor.
P‐56: A Single‐Inductor Bipolar‐Output DC/DC Converter with High Efficiency Over Wide Load Range for Active Matrix OLED
Authors: Lin Kuei‐Liang , Ng Shao Siang , Huang Tzu‐Chi , Chen Ke‐Horng , Liu Sheng‐Fa , Chiu Pao‐Hsien , Chen Sandy , Shen Chun‐Yu , Hsieh Ming‐Ta , Li Huai‐An 
Published: July 2014

AbstractThis paper proposes a single‐inductor bipolar‐output (SIBO) switching converter with high efficiency over a wide load range for active matrix organic light‐emitting diode (AMOLED) display. The SIBO converter provides a pair of positive and negative output voltages with only one external inductor. The proposed burst mode function can enhance the light load efficiency with low output ripples, 25mV and 10mV for positive and negative voltages, respectively. With the smooth start‐up function, the inductor current can rise smoothly and have low peak value, reducing the current stress on inductor and power MOSFETs. The efficiency can be maintained higher than 80% with the load current from 20mA to 140mA. At light loads, the efficiency is higher than 60% when the load current is above 5mA. The maximum efficiency is 88% when the input voltage is 3.7V and the load current is 60mA.
P‐176L: Late‐News Poster: A 3.7Gb/s Clock‐embedded Intra‐Panel Interface for the Large‐sized UHD 120Hz LCD TV Application
Authors: Jeon Hyun‐Kyu , Kim Byung‐Guk , Cho Hyun‐Ho , Choi Jung‐Hwan , Ko Seung‐Oh , Oh Suk‐Jae , Kim Sang‐Woo , Seo Jeong‐Il , Jeong Yong‐Ik , Na Jun‐Ho , Kang Pil‐Sung , Son Min‐Sik , Park Se‐Ryong , Kim Jae‐Hak , Park Jun‐Yeong , Park Jun , Hong Jin‐Cheol , Baek Jong‐Sang 
Published: July 2014

AbstractAn Intra‐panel interface that supports 3.7Gb/s data transmission on the ultra‐high definition (UHD) TV application is proposed. The interface channel of display module for UHD TV consists of long PCB traces and flexible flat cable (FFC), which severely degrade the signal quality of transmitted signal. To support over 3Gb/s data rate in the interface channel of UHD display, the receiver in the column driver is equipped with a continuous‐time linear equalizer (CTLE) with adjustable equalization step and data sampler with improved setup and hold time. The transmitter for the proposed interface is implemented using a field programmable gate array (FPGA). The column driver with the proposed receiver is fabricated with a 0.18um high‐voltage CMOS process. The proposed interface is verified with 84‐inch UHD (3840RGBx2160) resolution TFT‐LCD module with 10‐bit color depth and 120Hz refresh rate for large‐sized TV application. The proposed receiver in the column driver achieves 3.7Gb/s data rate in wafer test and 3.1Gbps data rate that is the maximum data rate in the pattern generator at the LCD module with 80‐cm FFC.
P‐61: WITHDRAWN: P‐62: Brightness and Contrast Improvement of Display Panel by Using Antireflection Films Nanoimprinted by Density‐Graded Nanoporous Silicon
Authors: Ho Yu‐Hsuan , Tsai Ming‐Chih , Peng Kai‐Yu , Ting Kuan‐Han , Tian Wei‐Cheng , Wei Pei‐Kuen 
Published: July 2014

AbstractWe present a convenient and low‐cost method to fabricate large‐area polycarbonate AR nanostructures to improve the luminous intensity and image clarity of a commercial 2.0‐inch OLED display panel in bright condition. The polycarbonate AR nanostructures were nanoimprinted by the graded‐density nanoporous silicon template with nanoparticle‐catalyzed etching. After attaching on the display panel to reduce the light reflection on the substrate, the brightness enhancement and decrease of ambient light reflection were observed. Due to the enhancement of contrast ratio, the quality index of the Lena image test was improved from 0.85 to 0.92 under strong ambient illumination.
P‐65: Study on Resin as Passivation Layer of Retina Display for Mobile Phone Screen
Authors: Yan Changjiang , Xie Zhenyu , Guo Jian , Wang Wei , Min TaeYup , Su Shunkang , Lu Kai , Zhang Jiaxiang , Li Tiansheng , Xu Shaoying , Zhang Wenyu , Tian Zongmin , Li Jing , Kun Liu 
Published: July 2014

AbstractThe Si‐C resin layer has lower dielectric constant, better optical transparency, and can be spin coated as a flat surface film easily. By using Si‐C resin as passivation layer, we investigated the etching characteristics of resin thin films in SF6/O2/He plasma, and found the variable thickness of channel protection layers have a play role in a‐Si:H TFT characteristic. We also success in prototyping a high definition LCD panel, retina display as 326 pixels per inch, which can be improved the RC delay of signal effectively and decreased nearly 40% in the logic power consumption compare to the existing panel with only SiNx passivation layer.
P‐66: The Mechanical Properties of Aluminosilicate Glass with Chemical Strengthening
Authors: Chang Kuo‐Chou , Tung Li‐Ting , Liu Yu‐Chen 
Published: July 2014

AbstractThe stress of chemical strengthened glass was tested by ring‐on‐ring and Vickers hardness test. Glass with high compressive stress could be shown the high biaxial stress. The Vickers hardness only depended on depth of layer.
P‐67: Research on Thermal Mura in Edge‐Type LCD Module and Improvement by Heat Sink Design
Authors: Hsiao Ken , Lv Cheng‐Ling , Tang Guo‐Fu , Chen Shih‐Hsiang , Zhang Pang‐Ling ,   Supported by Guangdong Innovative Research Team Program (No.2011D079)
Published: July 2014

AbstractThis paper provides a way to quantify thermal mura by heat stress on panel using thermal and structure coupling simulation method. Meanwhile, we use this method to investigate the influence of heat sink width and propose its critical value under different power density, which is meaningful to module design.
P‐68: Analysis of Movable Mura and Improvement in LCD Cells
Authors: Hsiao Ken , Tang Guo‐Fu , Chen Shih‐Hsiang , Lv Cheng‐Ling , Zhang Pang‐Ling , Lo Sheen , Chang Robert ,   Supported by Guangdong Innovative Research Team Program (No.2011D079)
Published: July 2014

AbstractThe mechanism of movable mura in large‐sized LCD is investigated. The shift between TFT and CF glasses shown in experiment is well explained by the proposed simulation method. These results suggest the design criteria of black matrix margin in LCD cells for which movable mura could be restrained or eliminated.
P‐177L:Late‐News Poster: Development of High Strength Chemically Strengthened Glass
Authors: Kawamoto Kosuke , Murata Takashi , Miwa Shinkichi , Ohji Masahiko , Yamazaki Hiroki 
Published: July 2014

AbstractNewly developed chemically strengthened glass, T2X‐1, is demonstrated. T2X‐1 has high strength and excellent ion‐exchange properties. Fracture strength of T2X‐1 is 20% higher than conventional Alumino‐silicate glass (CX‐01). T2X‐1 has twice as fast ion‐exchange speed and durable compressive stress against four times more Na+contamination in molten KNO3than conventional Alumino‐silicate glass (CX‐01).
P‐70: Multilayer Silicon and Silicon Oxide Subwavelength Grating as a Reflective Polarizer in Visible Region
Authors: Pan Su , Kwok Hoi‐Sing 
Published: July 2014

AbstractWe proposed a novel visible polarizer based on multilayer silicon and silicon oxide alternative subwavelength grating and its optical characteristic is numerically investigated by finite difference time domain method. The reflectance of TE mode and transmission of TM mode are above 90% with extinction ratio up to 103. Moreover, the proposed polarizer also has wide angular field and large fabrication tolerance.
P‐71: Simulation and Experimental Study on Light Leakage in ADS Mode LCDs
Authors: Yang Yafeng , Kiman Kim , Qin Guangkui , Suzuki Teruaki , Yao Jikai , You Jaegeon 
Published: July 2014

AbstractIn this paper, we discuss about the light leakage mechanism in the dark state of ADS mode LCDs. Based on the stress‐optic law, we analyzed the phenomenon through several experiments and simulations. We have concluded that the main reason of the light leakage is the combined effect of the retardations from the stressed glass and the liquid crystal layer.
P‐74: Adaptable Light Beaming and Shaping with Lens Array
Authors: Wang Jieyu , Zhang Yuning , Li Xiaohua 
Published: July 2014

AbstractA light configuration with adjustable light beaming and shaping is proposed based on integral imaging. The system is composed of a LED matrix and a lens array. It accomplishes a real‐time control of the light beaming and shaping in electrical way without the complex mechanical structure currently used in the traditional spot control system.
P‐87: All Solution Processable of Color Tunable Quantum Dot Light‐Emitting Diodes
Authors: Chen Jing , Lei Wei , Li Zhi , Pan Jiangyong , Li Qing , Xia Jun , Tu Yan 
Published: July 2014

AbstractIn this paper, we report on the fabrication of color tunable quantum dot light‐emitting diodes (QD‐LED) using a hybrid ZnO@TiO2 as electron injection layer and ZnCdSeS QD as emitters. The color can be varied from yellow to white, and then blue during the applied voltage changing from 0 to 15 V.
P‐88: All‐Inorganic Quantum‐Dot Light‐Emitting Devices Prepared by Solution‐Process Route
Authors: Li Zhi , Qasim Khan , Chen Jing , Lei Wei , Pan Jiangyong , Li Qing , Xia Jun , Tu Yan 
Published: July 2014

AbstractWe have fabricated all‐inorganic quantum‐dot light‐emitting devices(QDLED) with NiO as a hole transporting layer and TiO2 as a inorganic electron transporting layer. P‐type NiO and n‐type TiO2 charge‐transport layers were synthesized by sol‐gel method using spin‐coating technique. The thickness of TiO2 layer was optimized with different spin‐coating speed, and studied the luminescence characteristics of devices. Results indicated devices with 4000 rpm TiO2 layer has lower turn voltage 4.2V and higher EL intensity.
P‐179L: Late‐News Poster: Chemical Stability Enhancement of K2SiF6:Mn4+ by Metal (Oxide) Coating
Authors: Deressa Gemechu , Jeong Hyoungseak , Park Seongwoo , Lim Seokgyu , Lee Changyup , Kim Hyunjong , Kim Jongsu 
Published: July 2014

AbstractThe K2SiF6:Mn4+ phosphor was synthesized by a redox reaction from SiO2 [1]. Under the 450 nm excitation, K2SiF6:Mn4+ show a narrow deep‐red emitting around 633 nm which attributed to the 2Eg to 4A2g transition of Mn4+ ion with the half width of 8 ‐10 nm. The particle size was approximately 8 μm. We obtained single phase of cubic structure with a space group of Fm‐3m (225) which agree with XRD pattern of JCPDS # 85‐1382. In the temperature dependence of emission spectra, emission intensity decrease to around 60 % (80%@200°C YAG) of that at room temperature is about 175°C. The chemical stability of the phosphors was improved by coating the phosphor with target metal oxide. These phosphors can be efficiently excited by the blue light‐emitting InGaN diode and provides a high color rendering property with green or yellow phosphors. It will be useful as a red phosphor for white‐light‐emitting diode.