Growth of III‐Nitrides
Authors: Dupuis Russell D. , Ponce Fernando A. 
Published: April 2015

AbstractThe International Symposium on the Growth of III‐Nitrides (ISGN) series of conferences have been premier international forums for experts from academia, industry, and national laboratories to present their latest progress and exchange ideas in the fundamental and applied aspects of III‐N bulk and epitaxial growth technologies as well as related device advances. III‐N compound semiconductor materials underlie many of today's most advanced high‐performance devices such as LEDs, laser diodes, and transistors, which are becoming an essential part of the solution of many global problems. In the future, III‐N solar cells, nanostructure materials, and other innovative devices will play a similar significant role in improving the human condition.The primary purpose of ISGN‐5 was to foster the continued advance of this important field of research and development. The ISGN‐5 was organized by a team of US‐based experts in the field and the choice of Plenary and Invited speakers was based upon inputs from the International Advisory Committee composed of active III‐N researchers from all over the world. We actively solicited papers describing the latest work in the following technical areas:– III‐N bulk growth: AlN, GaN, InN– Epitaxial growth techniques– Ternary and quaternary alloys– III‐N nanostructures– Defect control and surface effects– Optical and electrical properties– III‐N magnetic and spin‐related phenomena– III‐N devices: FETs, HBTs, rectifiers, LEDs, lasers, photodetectors, and novel devicesThe ISGN‐5 program had fourteen regular sessions and two poster sessions scheduled over four days. The total number of attendees was 146. The conference technical sessions began with a plenary talk by André Strittmatter who described the current state‐of‐the‐art of GaN on Si. The regular sessions were begun with Invited Speakers. The full conference schedule is available here: http://www.mrs.org/isgn‐5‐program/.The primary conference support was provided by AIXTRON, Sandia National Laboratories, the U.S. National Science Foundation, and the U.S. Army Research Office. We were fortunate to have the on‐site support of eleven commercial vendors of equipment and services related to III‐N materials and devices who arranged to have a booth at ISGN‐5 to display and demonstrate their products. These companies included AIXTRON, Aymont Technology Inc., Evans Analytical Group, HexaTech, Inc., k‐Space Associates, Inc., KITZ SCT America Corporation, Nitride Crystals, Inc., Proton OnSite, Riber, Inc., Semiconductor Technology Research–STR Group, and Taiyo Nippon Sanso Corporation.The ISNG‐5 proceedings Guest Editors were Christian Wetzel (Rensselaer), Jae‐Hyun Ryou (University of Houston), and Michael Manfra (Purdue University).We thank the sponsors, the exhibitors, the Materials Research Society staff, the members of the Conference Organizing Committee, the members of the International Advisory Committee and of the Program Committee, and everyone who attended for their support.The ISGN‐5 Symposium Chairs,Russell D. Dupuis, Georgia Institute of TechnologyFernando A. Ponce, Arizona State University