bluuebunny/crossref_metadata_2025_split huggingface dataset:
Intrinsic Point Defects in Semiconductors 1999
Authors: Watkins George D. 
Published: February 2013

Abstract
The sections in this article are

Introduction

Silicon

Defect Production

The Silicon Vacancy

Electronic Structure

Effects of Lattice Relaxation – General Considerations

Electrical Level Positions of the Vacancy

Vacancy Migration

Vacancy Interactions with other Defects

The Silicon Interstitial

Interstitial Migration

Trapped Interstitials

Theory of the Silicon Interstitial

Close Frenkel Pairs

Other Group
IV
Semiconductors

Germanium

Diamond

Si
C

II
–
VI
Semiconductors

Zn
Se

The Zinc Vacancy

Zinc Vacancy Diffusion and Interaction with other Defects

Interstitial Zinc and Close Frenkel Pairs

Defects on the Selenium Sublattice

Other
II
–
VI
Materials

The Metal Vacancy

The Chalcogen Vacancy

The other Intrinsic Defects

Theory

III
–
V
Semiconductors

Antisites

The Anion Antisite
V

III

The Cation Antisite
III
V

Group‐
III
Atom Vacancies

Metal Interstitials

Defects on the Group‐
V
Sublattice

Summary and Overview

Summary

Group
IV
Semiconductors

II
–
VI
Semiconductors

III
–
V
Semiconductors

Overview

Vacancies

Interstitials

Antisites

Migration Barriers

Acknowledgements
Point Defects, Diffusion, and Precipitation
Authors: Tan The Y. , Gösele Ulrich M. 
Published: February 2013

Abstract
The sections in this article are

Introduction

Native (Intrinsic) Point Defects Under Thermal Equilibrium Conditions

Native (Intrinsic) Point Defects Under Nonequilibrium Conditions

Phenomenological Description of Diffusion Processes

Atomistic Diffusion Mechanisms

Diffusion Without Involvement of Native Point Defects

Simple Vacancy Exchange and Interstitialcy Mechanisms

Interstitial‐Substitutional Mechanisms

Uncharged Species

Charged Species

Recombination‐Enhanced Diffusion

Diffusion in Silicon

General Remarks

Silicon Self‐Diffusion

Interstitial‐Substitutional Diffusion:
Au
,
Pt
and
Zn
in
Si

Dopant Diffusion

Fermi Level Effect

Influence of Surface Reactions

Dopant‐Diffusion‐Induced Nonequilibrium Effects

Recombination‐Enhanced Diffusion

Diffusion of Carbon and Other Group
IV
Elements

Diffusion of Si Self‐Interstitials and Vacancies

Oxygen and Hydrogen Diffusion

Diffusion in Germanium

Diffusion in Gallium Arsenide

General Remarks

Gallium Self‐Diffusion and Superlattice Disordering

Intrinsic Gallium Arsenide

Doped Gallium Arsenide

Arsenic Self‐Diffusion and Superlattice Disordering

Impurity Diffusion in Gallium Arsenide

Silicon Diffusion

Interstitial–Substitutional Species

Comparison to Diffusion in Other
III
–
V
Compounds

Agglomeration and Precipitation

Agglomerates of Native Point Defects in Silicon

Void and Gallium Precipitate Formation During Zinc Diffusion into
Ga
As

Precipitation with Volume Changes in Silicon
Dislocations
Authors: Alexander Helmut , Teichler Helmar 
Published: February 2013

AbstractThe sections in this article areIntroductionGeometryExperimental Results on the Electronic Properties of Dislocations and Deformation‐Induced Point DefectsElectron Paramagnetic Resonance (EPR) Spectroscopy of Plastically Deformed SiliconInformation on Dislocations and Point Defects from Electrical MeasurementsPhenomena Indicating Shallow Dislocation‐Related StatesPhotoluminescence (PL)Optical AbsorptionMicrowave Conductivity (MWC)Electric Dipole Spin Resonance (EDSR)Electron Beam Induced Current (EBIC)GermaniumGallium ArsenideAIIBVICompoundsTheoretical Investigations about Electronic Levels of DislocationsCore Structure CalculationsDeep Electron Levels at DislocationsCore Bond Reconstruction and Reconstruction DefectsKinks, Reconstruction Defects, Vacancies, and Impurities in the Dislocation CoresShallow Dislocation LevelsDeep Dislocation Levels in CompoundsDislocation MotionGeneralMeasurements of the Velocity of Perfect Dislocations in Elemental SemiconductorsKink Formation and Kink MotionExperiments on the Mobility of Partial DislocationsCompoundsTheory of Dislocation MotionDislocation Motion in Undoped MaterialDislocation Motion in Doped SemiconductorsDislocation Generation and Plastic DeformationDislocation NucleationDislocation Multiplication (Plastic Deformation)Generation of Misfit DislocationsGettering with the Help of DislocationsAcknowledgements
Interfaces
Authors: Hull Robert , Ourmazd Abbas , Rau W. D. , Schwander P. , Green Martin L. , Tung Raymond T. 
Published: February 2013

AbstractThe sections in this article areIntroductionExperimental TechniquesInterfaces between Lattice‐Matched, Isostructural SystemsDefinitionStructureMicroscopic StructureMesoscopic and Macroscopic StructureInterfaces Defined by Inhomogeneous DopingRelaxation of Chemical InterfacesInterdiffusion due to Thermal AnnealingIntermixing due to Ion‐ImplantationSummaryInterfaces between Lattice‐Mismatched, Isostructural SystemsLattice Mismatch Strain and Relaxation MechanismsOrigin and Magnitude of Lattice Mismatch StrainStrain Accommodation and Relief MechanismsEpitaxial Layer RougheningInterdiffusionMisfit DislocationsCompetition between Different Relaxation ModesThe Critical Thickness for Misfit Dislocation Introduction: Excess StressBasic Concepts: Single Interface SystemsExtension to Multilayer SystemsMisfit Dislocation KineticsKinetic Relaxation ModelsNucleation of Misfit DislocationsPropagation of Misfit DislocationsInteractions of Misfit DislocationsTechniques for Reducing Interfacial and Threading Dislocation DensitiesElectrical Properties of Misfit DislocationsSummaryInterfaces between Crystalline Systems Differing in Composition and StructureIntroductionFabrication of Epitaxial Silicide–Silicon InterfacesMonolayers ReactionInterlayer Mediated EpitaxyGrowth of Silicon on SilicidesConglomeration of Silicide PrecipitatesEpitaxial Elemental MetalsEpitaxial Metallic Compounds onIII–VSemiconductorsStructure, Energetics, and Electronic Properties ofM–SInterfacesEpitaxial Silicide–Silicon InterfacesEpitaxial Elemental MetalsIntermetallic Compounds onIII–VSemiconductorsConclusionsInterfaces between Crystalline and Amorphous Materials: Dielectrics on SiliconTheSi/SiO2SystemProcessingTheSi/SiOxNySystemAlternative Gate DielectricsConclusion
Material Properties of Hydrogenated Amorphous Silicon
Authors: Street Robert A. , Winer K. 
Published: February 2013

AbstractThe sections in this article areIntroductionPlasma‐Enhanced Chemical Vapor Deposition Growth of Hydrogenated Amorphous SiliconMolecular StructureChemical BondingLocalization of Electronic StatesElectronic Structure and Localized StatesBand Tail StatesDoping and Dopant StatesThe Doping EfficiencyDopant StatesNative Defects and Defect StatesMicroscopic Character of DefectsDependence of the Defect Concentration on DopingDistribution of Defect StatesDependence of the Defect Concentration on Growth ConditionsSurfaces and InterfacesSurface StatesOxidationInterfacesAlloysElectronic TransportElectrical Conductivity, Thermopower and Hall EffectThe Drift MobilityDefect Equilibrium and MetastabilityThe Hydrogen Glass ModelThermal Equilibration of Electronic StatesThe Defect Compensation Model of DopingThe Weak Bond ModelThe Distribution of Gap StatesDefect Reaction KineticsStretched Exponential DecayHydrogen DiffusionMetastabilityDefect Creation by IlluminationDefect Creation by Bias and CurrentDevices and ApplicationsThin Film TransistorsP‐i‐nPhotodiodes and Solar CellsThe Photodiode Electrical CharacteristicsMatrix Addressed ArraysSummary
High‐Temperature Properties of Transition Elements in Silicon
Authors: Schröter Wolfgang , Seibt Michael , Gilles Dieter 
Published: February 2013

AbstractThe sections in this article areIntroductionTransition Elements in Intrinsic SiliconSolubilityDiffusionSolubility and Diffusion in Extrinsic SiliconIntroductionSolubilityDiffusionHigh Temperature Electronic StructurePrecipitation of Transition Elements in SiliconGeneral ConsiderationsChemical Driving ForcePrecipitate CompositionSpatial Distribution of PrecipitatesAtomic Structure of Silicide PrecipitatesPrecipitation without Volume Change: Nickel and CobaltPrecipitation with Volume Expansion: Copper and PalladiumHeterogeneous PrecipitationIron in SiliconCopper in SiliconNickel in SiliconElectrical Properties of Silicide PrecipitatesRecombination Behavior of Silicide PrecipitatesSpectroscopy of Deep States at Silicide PrecipitatesSilicide Precipitation atSi/SiO2InterfacesGettering Techniques and MechanismsIntroduction to Gettering MechanismsInternal GetteringOxygen Precipitation Getteringp/p+GetteringExternal GetteringIntroductionPoly‐Silicon GetteringAluminum GetteringCavity GetteringPhosphorus Diffusion Gettering, Segregation and Injection GetteringSummary and OutlookAcknowledgements
New Materials: Semiconductors for Solar Cells
Authors: Möller Hans Joachim 
Published: February 2013

AbstractThe sections in this article areIntroductionBasic Principles of Solar Energy ConversionTechnology of Solar Cell DevicesFundamental Material ParametersMonocrystalline and Polycrystalline SiliconHigh‐Quality SiliconCzochralski and Tri‐Crystal GrowthDefect Structure and Material PropertiesMulticrystalline SiliconIngot Growth TechnologiesDefect Structure and Electronic PropertiesRibbon Growth TechnologiesTechnological DevelopmentMicrostructure and Electronic PropertiesProperties of Efficiency Limiting DefectsOxygen and Carbon Related DefectsGettering of Transition MetalsHydrogen PassivationThin Film SiliconPolycrystalline Thin FilmsMicrocrystalline and Amorphous FilmsOptical and Electronic Transport PropertiesPolycrystalline FilmsAmorphous Solar CellsPolycrystalline Thin Film Compound SemiconductorsCadmium–TellurideProcessing Techniques and Related Material ProblemsElectronic PropertiesChalcopyrite SemiconductorsGeneral Properties ofCuInSe2and Related CompoundsDeposition TechniquesElectronic PropertiesSpecial Solar Cell ConceptsHigh Efficiency Solar Cell MaterialsDye SensitizedTiO2
New Materials: Gallium Nitride
Authors: Weber Eicke R. , Kisielowski Christian 
Published: February 2013

AbstractThe sections in this article areIntroductionApplications ofGaNand Related AlloysSpecific Materials Problems ofIII‐NitridesGrowth ofGaNand Related AlloysBulk Growth from SolutionHydride Vapor Phase Epitaxy (HVPE) ofIII‐NitridesMetal–Organic Vapor Phase Epitaxy (MOVPE) ofIII‐NitridesMolecular Beam Epitaxy (MBE) ofIII‐NitridesEpitaxial Lateral Overgrowth (ELOG) ofIII‐NitridesLaser Lift‐OffDefects inIII‐NitridesExtended DefectsPoint Defects and Doping IssuesOptical Properties ofIII‐NitridesBandedge‐Related TransitionsDonor–Acceptor PairsYellow LuminescenceCubicGaNElectrical Properties ofIII‐NitridesDevices Based onIII‐NitridesOptical Devices: Light Emitting Diodes (LEDs) and LasersElectronic Devices: Field Effect Transistors (FETs)OutlookAcknowledgements
Silicon Processing
Authors: Wilkes John G. , Lin Wen , Benson Ken E. 
Published: February 2013

AbstractThe sections in this article areIntroductionMetallurgical‐Grade SiliconSemiconductor Grade Polycrystal SiliconThe Chlorosilane RouteThe Silane RouteSingle Crystal SiliconFloat‐Zoned SiliconNeutron Transmutation Doped SiliconCarbon and Nitrogen in Float‐Zoned SiliconPeriodic Crystal GrowthCzochralski SiliconDislocation‐Free SiliconConstitutional SupercoolingThe Incorporation of Carbon and OxygenMagnetic Czochralski SiliconEvolution in Czochralski Crystal DiameterWafer PreparationSlicingEdge RoundingLapping/GrindingChemical EtchingPolishingCleaningMechanical Damage in SiliconOxygen in Czochralski SiliconThe Behavior of Oxygen in SiliconThe Precipitation of Oxygen in SiliconThermal Donors and Enhanced DiffusionGettering EngineeringExtrinsic Gettering in SiliconIntrinsic Gettering in SiliconAcknowledgements
Epitaxial Growth
Authors: Kuech Thomas F. , Tischler Michael A. 
Published: February 2013

Abstract
The sections in this article are

Introduction

The Epitaxial Process: General Features

Surface Thermodynamics and Surface Structure

Surface Transport and Incorporation

Growth Behaviors

Chemical Vapor Deposition: Technology and Issues

Reactors: Mass, Fluid, and Thermal Transport

Fluid Behavior and Reactor Design

Mass and Thermal Transport

Gas Phase and Surface Chemistry

Liquid Phase Epitaxy (
LPE
) Technology

LPE
Growth Procedures

Molecular Beam Epitaxy (
MBE
) Technology

Specific Epitaxial Systems: Materials and Growth Issues

Silicon Chemical Vapor Deposition

Silicon Chemical Vapor Deposition: Surface and Reactor Considerations

Silicon Chemical Vapor Deposition: Growth Chemistry

Heterojunction Formation

Impurity Incorporation

Ga
As
MBE

Growth of
Al
Ga
As
by
LPE

In
P
Metal Organic Vapor Phase Epitaxy (
MOVPE
)

Acknowledgements
Interconnection Systems
Authors: Knausenberger Wulf 
Published: February 2013

AbstractThe sections in this article arePerspectiveInterconnection Technology Trends and DriversTrendsInterconnection Density as a Cost DriverInterconnection Capability and Cost MetricInterconnection Cost ComparisonsMatching Capability and NeedInterconnection HierarchyPartitioningIntroductionPartitioning ApproachesComponent‐Oriented PartitioningInterconnection‐Oriented PartitioningInterconnection Distribution PatternsBroadcast InterconnectionsNetwork InterconnectionsStatus/Control InterconnectionsIdeal System Partitioning ApproachMultichip ModulesPrinted Wiring Board (PWB) TechnologyIntroductionMaterial SystemsPWBCategoriesRigidPWBsDiscrete Wired CircuitsFlexiblePWBsPWBProduction ProcessesBasic ProcessesFabrication Sequences for DifferentPWBTypesFuture DirectionsMerging of MarketsNew Form of Consumer ServicesEvolution of Technology
Diffusion Kinetics in Solids
Authors: Murch Graeme E. 
Published: February 2013

AbstractThe sections in this article areIntroductionMacroscopic DiffusionFick's LawsTypes of Diffusion CoefficientsTracer or Self‐DiffusionImpurity and Solute DiffusionChemical or InterdiffusionIntrinsic or Partial Diffusion CoefficientsSurface Diffusion CoefficientsPhenomenological Equations of Irreversible ThermodynamicsTracer DiffusionChemical DiffusionEinsteinian Expressions for the Phenomenological CoefficientsRelating Phenomenological Coefficients to Tracer Diffusion CoefficientsShort‐Circuit DiffusionMicroscopic DiffusionRandom Walk TheoryMechanisms of DiffusionThe Einstein EquationTracer Correlation FactorImpurity Correlation FactorCorrelation Factors for Concentrated Alloy SystemsCorrelation Factors for Highly Defective SystemsThe Physical or Conductivity Correlation FactorCorrelation Functions (Collective Correlation Factors)The Nernst–Einstein Equation and the Haven RatioThe Isotope Effect in DiffusionThe Jump FrequencyThe Exchange FrequencyVacancy ConcentrationDiffusion in MaterialsDiffusion in MetalsSelf‐DiffusionImpurity DiffusionDiffusion in Dilute AlloysSubstitutional AlloysInterstitial AlloysDiffusion in Concentrated Binary Substitional AlloysDiffusion in Ionic CrystalsDefects in Ionic CrystalsDiffusion Theory in Ionic CrystalsExperimental Methods for Measuring Diffusion CoefficientsTracer Diffusion MethodsChemical Diffusion MethodsDiffusion Coefficients by Indirect MethodsRelaxation MethodsNuclear MethodsSurface Diffusion MethodsAcknowledgements
Statistical Theories of Phase Transitions
Authors: Binder Kurt 
Published: February 2013

AbstractThe sections in this article areIntroductionPhenomenological ConceptsOrder Parameters and the Landau Symmetry ClassificationSecond‐Order Transitions and Concepts about Critical Phenomena (Critical Exponents, Scaling Laws,etc.)Second‐Order Versus First‐Order Transitions; Tricritical and other Multicritical PhenomenaDynamics of Fluctuations at Phase TransitionsEffects of Surfaces and of Quenched Disorder on Phase Transitions: A Brief OverviewComputational Methods Dealing with the Statistical Mechanics of Phase Transitions and Phase DiagramsModels for Order–Disorder Phenomena in AlloysMolecular Field Theory and its Generalization (Cluster Variation Method,etc)Computer Simulation TechniquesConcepts about MetastabilityDiscussion
Novel Electrochemical Techniques in Corrosion Research
Authors: Grundmeier G. , Jüttner K. , Stratmann Martin 
Published: February 2013

AbstractThe sections in this article areIntroductionExperimental Investigation of Corrosion Reactions by Analysis of the Corrosion ProductsExperimental Investigation of Corrosion Reactions by Following the Chemical Reaction RateExperimental Investigation of Corrosion Reactions by Following the Rate of the Electrochemical Corrosion ReactionElectrochemical Impedance Spectroscopy and Noise AnalysisIntroductionThe Principle of Dynamic System AnalysisMeasurement of the Electrochemical ImpedancePresentation of Impedance DataInterpretation of Impedance DataThe Polarization ResistanceFrequency DispersionSurface InhomogeneitiesSingle Layer Impedance ModelSandwich Layer Impedance ModelEquivalent Circuit Versus Transfer FunctionThe Transport ImpedanceIron Corrosion in Neutral SolutionImpedance Model of Passive FilmsMetal Dissolution and Active‐to‐Passive TransitionElectrochemical NoiseNoise Sources in Electrochemical SystemsNoise Measurement TechniquesData ProcessingNoise Resistance and Polarization ResistanceThe Scanning Vibrating Electrode TechniqueIntroductionHistory of Scanning Reference ElectrodesBasic Principles of Localized Potential MappingLocalized Electrochemical Impedance Spectroscopy (LEIS)Applications of Modern Scanning Electrode TechniquesLocal Breakdown of PassivityGalvanic CorrosionInhibitionMicrobiologically Influenced CorrosionProtective Polymeric CoatingsConcluding RemarksScanning KelvinprobeIntroductionTheory of the Vibrating Condenser MethodThe Relation between the Volta Potential Difference and Corrosion‐Relevant PropertiesElectrolyte Covered Metal SurfacesMetals in Humid AirPolymer‐Coated MetalsCalibration of the KelvinprobeApplication of the Kelvinprobe: Atmospheric CorrosionExperimentalResultsApplication of the Kelvinprobe: Corrosion Protection by Organic CoatingsExperimentalPolymer‐Coated SteelPolymer Coated Galvanized SteelPolymer Coated Aluminum AlloysIndustrial CoatingsApplication of the Kelvinprobe: Corrosion Protection by Modified Metal SurfacesMetal Surfaces Modified by Monolayers of Organic MoleculesMetal Surfaces Modified by Ultra‐Thin Plasma PolymersMetal Surfaces Modified by Inorganic and Organic Layers
High‐Temperature Oxidation and Corrosion of Intermetallics
Authors: Brady M. P. , Pint B. A. , Tortorelli P. F. , Wright I. G. , Hanrahan R. J. 
Published: February 2013

AbstractThe sections in this article areIntroductionOxidation FundamentalsProtective Oxide Scale FormationReactive ElementsOverviewEffects on OxidationProduction of Alloys withREAdditionsApplicability and LimitationsPestingNiAlBased IntermetallicsOverviewNiAlTransient OxidationSteady‐State OxidationEffect of Al ContentAlloying AdditionsOther Corrosive EnvironmentsNi3AlTransient OxidationSteady‐State OxidationAlloying EffectsFeAlBased IntermetallicsOverviewHistorical PerspectiveThermodynamic and Kinetic Considerations in theFeAlOSystemFe3AlFeAlOther Corrosive EnvironmentsSulfur‐Containing GasesChlorine‐Containing GasesCarbon‐Containing GasesMolten Salts and Condensed DepositsTiAlBased IntermetallicsOverviewTiAl2TiAl3τ Phaseγ‐TiAlThermodynamic ConsiderationsThe Nitrogen EffectEffects of Alloying AdditionsEngineering ConsiderationsOther Corrosive Environmentsα2‐Ti3Aland OrthorhombicTi2AlNbα2AlloysOrthorhombic AlloysNbAlBased IntermetallicsOverviewNbAl3Nb2AlNb3AlNbTiAlPrecious Metal, Exotic, and Miscellaneous AluminidesPtAlIntermetallicsIrAlIntermetallicsRuAlIntermetallicsCoAlIntermetallicsVAlIntermetallicsLaves Phases and In‐Situ CompositesOverviewSingle‐Phase Laves AlloysNbNbCr2In‐Situ CompositesCrXCr2Type In‐Situ CompositesNiAl‐Based In‐Situ Compositesγ‐TiAl + Ti(Cr,Al)2andNbAl3 + Nb(Cr,Al)2In‐Situ CompositesSilicidesOverview and General ConsiderationsMoSi2OverviewHigh‐Temperature OxidationAccelerated Oxidation and PestingEffects of Alloying AdditionsCompositesOther Corrosive EnvironmentsMo5Si3TiSi2andTi5Si3TiSi2Ti5Si3V5Si3Cr3SiFeandNiSilicidesOther SilicidesBeryllidesOverviewComplex Beryllides–MBe13,MBe12, and M2Be17MBe2MBePhasesAcknowledgements
Corrosion of Ceramic Materials
Authors: Opila Elizabeth J. , Jacobson Nathan S. 
Published: February 2013

AbstractThe sections in this article areIntroductionExperimental TechniquesOxidation of Silica‐FormersProperties of SilicaBasic Oxidation Mechanisms of Silica FormersOxidation of SiliconOxidation of PureSiCin Dry OxygenOxidation of PureSi3N4in Dry OxygenOxidation ofSiCandSi3N4in the Presence of Low Level ImpuritiesOxidation ofSiCandSi3N4Containing Sintering AidsOxidation of Silica Formers in Other OxidantsOxidation ofSi,SiC, andSi3N4in Water VaporOxidation ofSiCinCO2Cyclic Oxidation of Silica‐FormersEffect of Oxidation on Fracture Strength of Silica‐FormersVolatilityDirect VaporizationOxide–Substrate ReactionsActive OxidationMolten Salt CorrosionRefractory Oxide Coatings on Silica‐Forming CeramicsOxidation of Alumina‐Forming Non‐oxidesOxidation of AlNOxidation ofAl4C3Boria‐Forming CeramicsTransition Metal Carbides and NitridesTransition Metal CarbidesTransition Metal NitridesOxidation of Ceramics Forming Multi‐Component ScalesMixed Oxide ScalesTransition Metal BoridesOxidation of Complex Systems Resulting in Mixed Oxide ScalesComposites which form Compound OxidesSiC‐ReinforcedAl2O3Si2N2OZrO2TiB2Al2O3Composites which form Single Phase Oxide Solid SolutionsCeramic Matrix CompositesSummary
Corrosion Engineering of Electronic and Photonic Devices
Authors: Sinclair J. D. , Comizzoli R. B. , Frankenthal R. P. 
Published: February 2013

AbstractThe sections in this article areIntroductionUnderstanding and Preventing Harmful Environmental EffectsSources and Deposition of ContaminantsEffects of Environmental ContaminationLeakage Currents and Arcing Caused by Water‐Soluble Ionic Dust and Other ContaminantsCorrosion of Band Pass Filters by Electrical Discharges within the CavityProduct Design and Materials SelectionPassivation Issues with Laser FacetsThreshold Voltage Shifts in ModulatorsMetal Migration‐Induced FailuresElectrical Contacts and Metallic JointsHigh Contact Resistance on Gold‐Plated Connector Contacts Caused by Pore‐Creep CorrosionHigh Resistance Failures in Device MetallizationsHigh Contact Resistance in Relays with Gold–Silver ContactsHigh Resistance Failures Due to Fretting Corrosion of Separable Connectors Using Tin FinishesCorrosion of Low Coefficient of Expansion Alloys in Metal‐To‐Glass SealsCorrosion by Impurities in MaterialsTarnishing and Cracking of Silver‐Plated Copper Cable ShieldMaterials and Device Corrosion during Shipping and StorageOther Electrochemical Corrosion MechanismsCorrosion of Gold Metallizations in the Absence of ContaminantsGalvanic CorrosionProcessing‐Related Corrosion IssuesAluminum Corrosion inTi/TiN/Al/TiNMetallizationMicropitting of Aluminum During Processing of Integrated CircuitsCorrosion of Aluminum by Chlorinated SolventsCorrosion Failures of Thin‐Film Tantalum Nitride ResistorsReliability Testing and Prove‐InGeneral Aspects of Accelerated Life TestingFine Particle TestingGround Synthetic Dust MixtureAtomized Spray DepositionTest Chamber for Fine ParticlesConductive Anodic Filaments–A Flawed PredictionFuture ChallengesAcknowledgements
Synthesis of Abiotic Foldamers
Authors: Khan Anzar 
Published: February 2013

Abstract
The sections in this article are

Introduction

Phenylene Ethynylene Foldamers

Backbone Folding: Design Principle

General Synthesis

Representative Examples

Oligo(
meta
‐Phenylene Ethynylene)s (
Om
PEs
)

Oligo(

ortho

‐Phenylene Ethynylene)s (
Oo
PEs
)

Helical Aromatic Amides

Backbone Folding: Design Principle

General Synthesis

Representative Examples

Oligoaryl‐Dicarboxamides

Oligoquinoline‐Dicarboxamides

Oligoanthranilamides

Oligopyridine‐Dicarboxamides

Helical Aromatic Ureas

Backbone Folding: Design Principle

General Synthesis

Representative Examples

Oligoheterocyclic Ureas

Oligoaryl Ureas

Oligobenzoyl Ureas

Helical Aromatic Hydrazides

Backbone Folding: Design Principle

Synthesis

Heterocyclic Foldamers

Backbone Folding: Design Principle

Representative Examples

Oligopyridine‐Pyrimidines

Oligopyridine‐Pyridazines

Oligonaphthyridine‐Pyrimidines

1,4‐Disubstituted‐1,2,3‐Triazoles

Oligoindoles

Conclusions