bluuebunny/crossref_metadata_2025_split huggingface dataset:
Electrochemical Performance of Lithium-Ion Cells with Lithium- and Manganese- Rich Oxide Cathodes
Authors: Badami Pavan , Wang Bingning , Liao Chen , Trask Stephen E. , Abraham Daniel P. 
Published: August 2024

State-of the-art (SOA) lithium-ion batteries (LIBs) being developed for transportation applications contain a transition metal (TM) oxide cathode and a graphite anode; both serve as host-matrices to house lithium ions during battery operation. The cathodes typically contains Li1+xNiaCobAlcO2 (NCA) or Li1+xNiaMnbCocO2 (NMC) oxides: both oxide chemistries contain Co, which is known to preserve the layered structure during lithium extraction/insertion reactions. However, the possibility of a global Co shortage and soaring costs has galvanized the LIB community to explore sustainable cathode chemistries, while maintaining cell performance (energy/power densities), safety and cycle/calendar life. In this context the U.S. Department of Energy (DOE) initiated the Earth-Abundant Cathode Active Material (EaCAM) Program for the development of sustainable cathode chemistries, based on earth-abundant elements.
Materials of particular interest to the EaCAM program are the x Li2MnO3 ● (1-x) LiMnaNibZcO2 composites; here Z refers to various elements that could be included in the oxide structure. These lithium- and manganese- rich materials are considered attractive candidates because of their high specific capacities, zero cobalt content, and lower costs compared to the SOA oxides. We have been examining the electrochemical behavior of cells with these oxides, with a particular focus on the 0.3 Li2MnO3 ● 0.7 LiMn0.5Ni0.5O2 (LMR) compound.
During this presentation, we will show results from battery cells, containing LMR cathodes and either graphite or lithium-titanate anodes. In particular, the use of a microprobe reference electrode to monitor the cathode and anode potentials will be discussed. The effect of activation on cell performance and the performance loss characteristics during cycling will be highlighted. We will show how cell impedance is affected by voltage hysteresis and the voltage fade that results from cycling. Our ultimate goal is to identify constituents and mechanisms responsible for the cell performance loss and develop solutions to mitigate this degradation.
Acknowledgement: This document has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract No. DE-AC02-06CH11357.
Role of Halogen Elements in Conductivity and Electrochemical Stability of Sulfide Based Solid Electrolytes
Authors: Raj Hari , Pralong Valerie 
Published: August 2024

All-solid-state batteries (ASSBs) are a promising candidate for future energy storage technology with better safety and higher energy density [1]. Safety of solid state batteries come from solid electrolytes used instead of organic liquid electrolytes in conventional Li-ion batteries. The various types of solid electrolytes have already been reported for SSBs which can be divided into oxides, sulfides, halides and polymers based on their properties, advantages and disadvantages [2]. Among them, sulfide based solid electrolytes have advantages over other due to high conductivity and ductile nature of sulfides [3]. The discovery of Li10GeP2S12 solid electrolyte called LGPS structured sulfide electrolyte have shown great potential to replace liquid electrolyte as ionic conductivity of LGPS was found 1.2×10-2 S cm-1 at room temperature comparable to the conductivity of organic liquid electrolyte [4]. However, Li10GeP2S12 electrolyte suffers with poor cyclability in solid state batteries due to reduction of Ge+4 ions to Ge0, and instable against lithium metal anode [5, 6].
The solid electrolytes (SEs) with high conductivity and better stability against lithium metal are most important requirements for successful commercialization of solid state battery (SSB) technology. Therefore, in the search for new SEs with above mentioned qualities, halogen elements (Cl, Br, I) are explored in Li-P-S-O system to prepare Li10GeP2S12 (LGPS) structured SEs. In all prepared SEs, LPSOBr and LPSOI compositions show highest conductivities of 0.55 mS cm-1 and 0.67 mS cm-1 at 25 °C. The phase identification of newly synthesized solid electrolytes is done by X-ray diffractometer technique along with Rietveld refinement analysis. The conductivity of prepared solid electrolytes is determined by electrochemical impedance spectroscopy. These similar compounds also show superior stability against lithium metal in symmetric cells (Li/Ses/SE) as well as in full SSB cells (NCA/SEs/graphite) tested with LiNi0.8Co0.15Al0.05O2 cathode and graphite anode. These compounds also show 5 times higher stability in ambient environment conditions as compared to non-doped LPSO compound.
References:

Nikodimos et al. Adv. Energy Mater. 2022, 2202854

Scrosati et al., Power Sources 195, 2010, 2419.

Zhang et al., Energy Storage Mater. 10, 2018, 139-159.

Jiang et al., ACS Appl Mater Interfaces 12, 2020, 54662-70.

Kamaya et al., Mater., 10, 2011, 682–686.

Neveu et al., Power Sources 467, 2020, 228250.
Ionblox’s SiOx-Based, High-Energy, High-Power Li-Ion Battery for Performance Electric Vehicles and Electric Aviation
Authors: Hays Kevin A , Elangovan Ayyappan , Lopez Herman A. , Sinkula Michael , Kumar Sujeet 
Published: August 2024

Demands on land-based, high-performance electric vehicles (EVs) and electric aviation, by means of electric conventional takeoff and landing aircraft (eCTOLs) and electric vertical takeoff and landing aircraft (eVTOLs) demand more on a secondary cell chemistry than ever before. There are many secondary cells on the market that offer energy density, power density, fast-charge capability, or cycle life, but few, if any other manufacturing-ready cells, offer a combination of all four. IONBLOX has solved this by pairing it’s patented, Pre-lithiated SiOx anode with a high nickel, NMC cathode to produce cells exceeding 330 wh/kg. Herein we describe the performance of our 32 Ah cell, featuring high-energy density, high-power density, extreme fast charge capability, and good cycle life, within a package that is already in production.
In particular, challenges for the eVTOL market will be addressed, which require peak power demand on the cell at low state-of-charge, without reducing the energy density. Methods for characterizing cells for such high-power applications will be further explored. DCIR pulse characterization and more customized testing like usable energy testing, which is important for identifying the applicable energy density for high-power use cases, will be demonstrated. Additionally, extreme fast charge capability is described on our large format cells with 5 min charge to >60% total cell capacity, over 1000 cycles. This shows such a cell is up to the expectations of a consumer familiar with the timing of a standard gasoline pump. Contribution from the information presented herein demonstrates the state of Si-based anode chemistry and can serve as useful guidelines to the academic community as future technologies are pursued for similar applications

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(Invited) Electroflow: Sustainable Electrochemical Lithium Chemical Production
Authors: McShane Eric J. , Gardner Evan J. 
Published: August 2024

The demand for lithium has soared in recent years as the adoption of electric vehicles has grown rapidly, and lithium supply will need to grow another ~5x from current day to meet projected demand for lithium in 2030. To keep pace with this exponentially growing demand, novel methods of lithium sourcing are needed. Direct lithium extraction (DLE) from saltwater brines holds promise to unlock the lithium resources needed to power the electric vehicle revolution.
Lithium is traditionally sourced via two methods. Open pit hard rock mining is the method which many are familiar with. In this method, rocks are excavated, roasted with sulfuric acid, and the eluent is processed to produce a pure lithium product. This is well known to be environmentally destructive, and it produces larges amounts of waste products. The second method employed to produce lithium chemicals is brine evaporation ponds. In this method, brine is pumped to a surface pond, often multiple acres across, and solar evaporation concentrates the lithium in the brine to the point that it can undergo further processing. This method is extremely land and water intensive, and local residents adjacent to such ponds are increasingly worried about the effects of such methods on local water tables.
Electroflow employs a DLE process to convert brine directly into pure, battery grade lithium chemicals via a sustainable electrochemical process. Our electrochemical cell design enables extraction from dilute lithium brine resources with as low as 10 ppm Li, which unlocks huge swaths of new lithium resources across the globe, and specifically in North America. We use lithium-selective electrode materials as the basis for lithium separation from brine solutions, and this allows a new paradigm of DLE processes that have not yet been thoroughly studied. This talk will describe the operation of our technology and explore the impact that it could have at scale.
(Invited) Challenges and Successes of an Industrial Start-up to Global Electrolyzer Company
Authors: Capuano Christopher B. , Ayers Katherine E. , Dalton Luke T. , Anderson Everett , Carmo Marcelo 
Published: August 2024

Hydrogen generation via electrolysis has gained much attention internationally as not only a sustainable source of fuel for the transportation, but as a carrier of energy to capture stranded renewable energy due to the carbon-free chemical cycle and response characteristics of the technology. The barrier to entry preventing this technology from being widely adopted is the overall cost associated with both the upfront capital expense as well as the operating cost incurred over the product life. The majority of this cost is driven by 1) low electrical efficiencies due to the high ohmic resistance of thicker membranes required by electrolysis systems to electrochemically compress generated hydrogen for storage and the overpotential associated with the water splitting oxygen evolution reaction (OER) catalysts typically used, 2) high cost of system and cell stack materials, which need to be durable for up to 100,000hrs at potentials approaching 2V in both reducing and oxidizing environments, and 3) the lack of a robust supply chain for high volume manufacturing to further drive down cost through economies of scale.
Nel Hydrogen has worked to commercialize this technology, originally developed for aerospace and miliary applications where cost and efficiency were not the drivers. Since the founding of Proton Energy Systems in 1996 and to the present as Nel Hydrogen we have worked to address these problem areas in an attempt to develop products that can serve cost sensitive markets, such as energy capture and storage. During this talk, I will look back on the challenges we faced as an industrial start-up dealing with uninterested suppliers, creating relationships, and establishing partnerships, all while developing our first 28cm2 products to the point today, where we are producing and siting multi-MW systems.
Enhancing the Performance of Electrochemical RAM (ECRAM) through Modeling Guided Device Engineering
Authors: Tessler Nir , Jeon Seonuk , Woo Jiyong 
Published: August 2024

Traditionally, the only ions allowed or welcomed by the microelectronic industry are those that act as fixed dopants. The issue of mobile ions became welcome primarily due to the memristor technology however, thin film transistor technologies benefit from them too. The electrochemical (transistor) random access memory (ECRAM) is emerging as a promising building block for multi-level neuromorphic computing. Using FAB-compatible materials we construct the ECRAM using CuOx as the gate and ions source (Cu+). The morphology of the HfOx gate insulator layer is tuned to render it ion transporting such that it can act as a uniform electrolyte layer. Lastly, the channel material is WOx with tungsten metal as the source/drain contact.
While there are several reports of ECRAM devices, the operation mechanisms are not fully known/understood thus withholding progress of this field. Using the Sentaurus device simulator by Synopsis, including the hydrogen diffusion module, we simulate the mixed ionic electronic operation of the device. We have recently reported that by fitting the simulation to the device performance, we could identify the potentiation mechanism (i.e., insulator charging) and the occurrence of copper plating that takes place under high Cu+ ion flux (as in fast charging of Li batteries).[1]
In the first part of the talk, we will expand on the chemical-physics details of the ECRAM device mentioned above. Next, we will present a new device architecture where we remove the WOx layer and study the ionic-electronic conduction of a modified HfOx layer. By fine-tuning the stoichiometry of the HfOx layer, it assumes both roles of ionic electrolyte and electronic conducting channel. Following detailed modelling of the measured properties, we introduce AlO2 as an ionic barrier layer at the WOx/HfOx interface to enhance the ionic retention of the HfOx layer. Using the above three device architectures in conjunction with the mixed ionic-electronic device simulation we reveal the role of the two memory mechanisms: a) Electric field-activated ion transport and b) Structure-induced trapping by ion-barrier layers.
Reference
[1] Nir Tessler, Nayeon Kim, Heebum Kang, Jiyong Woo; Switching mechanisms of CMOS-compatible ECRAM transistors—Electrolyte charging and ion plating. J. Appl. Phys. 21 August 2023; 134 (7): 074501. https://doi.org/10.1063/5.0154153

Figure 1
(Invited) Material Engineering for the GAA and Post-GAA Transistors and Interconnects
Authors: Moroz Victor , Smidstrup Soren , Choi Munkang , Gull Ronald , Aboud Shela 
Published: August 2024

Feature scaling in advanced CMOS technology has been slowing down starting at 10 nm node and is expected to stop completely in the next few years. Nevertheless, transistor density scaling is continuing at a Moore’s law pace, driven by DTCO and 3D IC.
Transistor dimensions and minimum metal pitch are expected to be massaged down only by 10% to 20% during the next decade. However, both the transistor and the interconnect will continue to evolve and improve both in performance and in variability.
Currently, the industry is transitioning from FinFET technology to GAA (Gate All-Around) technology. The next transition, from GAA to the NMOS and PMOS GAA transistors stacked on top of each other (often referred to as CFET (Complementary Field Effect Transistor)) is expected in 8 to 10 years from now.
The main methodology for GAA and CFET transistor engineering comes down to bandstructure engineering, where material composition, shape and thickness of different layers, and mechanical stress are engineered to tailor a bandstructure of the channel that maximizes on-state driving strength and minimizes off-state leakage and variability. The key methodology for bandstructure engineering is ab-initio analysis of transistor components and then transfer of the obtained bandstructure to transistor scale analysis to characterize its behavior.
For the interconnect engineering, the tight metal pitches and increasingly tall and narrow vias dictate transition from copper to alternative metals, with a preference for the metals that can be etched and selectively grown. The key methodology for interconnect engineering is ab-initio analysis of electron scattering at the interfaces and grain boundaries. The scattering is then converted into interconnect resistance that defines speed and power consumption of the advanced CMOS circuits.
This work introduces the concepts of transistor band structure engineering and interconnect scattering engineering and provides illustrations of these methodologies applied to GAA and post-GAA technologies.
(Invited) Organic Source-Gated Transistors for High-Gain Sensor Signal Conditioning
Authors: Sporea Radu Alexandru 
Published: August 2024

A set of important developments have been recently demonstrated in contact-controlled thin-film transistors [1-3] realized with organic semiconductors.
Targeted at obtaining superior power efficiency, layout utilization and signal integrity, these advances largely focus on the electrical and geometrical optimization of the source area. Field-relief structures embedded into the source contact produce high intrinsic gain in both n-type and p-type inkjet-printed organic source-gated transistors (SGTs) [4-5], toward achieving the potential of such devices in high gain unipolar amplifiers [6]. Thermal effects are reduced via contact barrier – semiconductor interplay [7] and robust optical sensing of blue light is demonstrated [8]. Finally, utilizing the source barrier, as opposed the W/L geometry of the transistor to dictate drain current magnitude leads to compact and practical CMOS inverters when p-type DNTT-based organic SGTs are paired with n-type IGZO SGTs [9].
By judicious and application-driven design (Figure 1) [10], the source-gated transistor and its evolution, the multimodal transistor [11], are showing significant potential in signal conditioning and sensing applications.
[1] J. M. Shannon et al., IEEE Trans. Electron Devices, 60, 2444–2449 (2013).
[2] A. Valletta et al., J. Appl. Phys. 114 064501 (2013).
[3] J. Zhang, et al., PNAS
116, 4843 (2019).
[4] Y. Hemmi, et al., Nanomaterials, 12, 4441 (2022).
[5] Y. Hemmi, et al., Adv. Electron. Mater., 9, 2201263 (2023).
[6] E. Bestelink, et al., IEEE Sens. J., 20 (24), 14903 (2020).
[7] E. Bestelink, et al., Adv. Electron. Mater., 9, 2201163 (2023).
[8] E. Bestelink, et al., Adv. Opt. Mater., 2301931 (2023).
[9] E. Bestelink, et al., J. Mater. Chem. C, 11, 11688 (2023).
[10] E. Bestelink, et al., Adv. Electron. Mater., 8, 2101101 (2021).
[11] E. Bestelink, et al., Adv. Itell. Sys.,
3, 2000199 (2021).

Figure 1
(Invited) Transferable Organic Semiconductor Nanosheets for Van Der Waals Heterojunction Devices
Authors: Kalkan Sirri Batuhan 
Published: August 2024

The combination of organic semiconductors (OSCs) and two-dimensional materials provides a new basis to harness the advantages of both material systems, for example to fabricate unipolar pentacene thin-film transistors using graphene contacts [1] and p-n junctions using pentacene and molybdenum disulfide [2]. However, the fabrication of such devices by vapor deposition of OSCs is a challenge because growth is limited by the surface-dependent diffusion of small molecules. In this talk, I will present a novel method for the preparation of transferable OSC nanosheets that overcomes this problem. Highly crystalline, wafer-scale (3") nanosheets as thin as 20 nm can be obtained by precisely delaminating the OSC layer from a water-soluble sacrificial film in an appropriate wetting geometry. These free-floating films are then deposited on arbitrary substrates while maintaining morphology and crystallinity. Consequently, we demonstrate functional OSC nanosheets on top of prefabricated electrodes and monolayer MoS2, resulting in devices such as unipolar, ambipolar, and anti-ambipolar field effect transistors [3].
References:
[1] Lee, W.H., Park, J., Sim, S.H., Lim, S., Kim, K.S., Hong, B.H. and Cho, K., 2011. Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors. Journal of the American Chemical Society, 133(12), pp.4447-4454.
[2] Jariwala, D., Howell, S.L., Chen, K.S., Kang, J., Sangwan, V.K., Filippone, S.A., Turrisi, R., Marks, T.J., Lauhon, L.J. and Hersam, M.C., 2016. Hybrid, gate-tunable, van der Waals p–n heterojunctions from pentacene and MoS2. Nano letters, 16(1), pp.497-503.
[3] Kalkan, S.B., Najafidehaghani, E., Gan, Z., Apfelbeck, F.A.C., Hübner, U., George, A., Turchanin, A. and Nickel, B., 2021. Wafer scale synthesis of organic semiconductor nanosheets for van der Waals heterojunction devices. npj 2D Materials and Applications, 5(1), p.92.
Photoluminescence and Electroluminescence Confocal Imaging of an OLED
Authors: Berry Matthew , Thomson Stuart 
Published: August 2024

In recent years organic light-emitting diodes (OLEDs) have become one of the leading technologies for full-colour display panels in high-end smartphones and televisions. This rapid growth in use has occurred because OLEDs offer an all-around superior performance to liquid crystal displays (LCDs). For example, they are thinner, lighter, more flexible, less power consumptive, and brighter.
When new OLEDs are developed, the optoelectronic properties of individual components and the complete device can be characterised using photoluminescence (PL) and electroluminescence (EL) spectroscopy. In this poster presentation, we use a confocal Raman microscope to characterise and spatially resolve the optoelectronic properties of a fabricated OLED device with four imaging modalities: PL, EL, time-resolved PL (TRPL), and time-resolved EL (TREL). Using a confocal microscope to characterise an OLED's spectral and time-resolved properties provides much greater detail than bulk measurements.

Figure 1
(Invited) Breakdown Improvement of Mg-Diffused Current Blocking Layer in Ga2O3
Authors: Zeng Ke , Bian Zhengliang , Chowdhury Srabanti 
Published: August 2024

The path towards an all-planar highly efficient vertical Ga2O3 transistor requires the construction of a buried gate barrier junction to circumvent the pre-mature breakdown near the gate often seen in lateral structures. An effective selective doping technique is necessary to achieve this. By taking advantage of the high diffusivity of dopants and defects in Ga2O3, we propose the use of diffusion doping as a rapid and non-invasive technique to explore the possibility of an effective current blocking layer (CBL) in vertical Ga2O3 transistors. Unlike ion implantation, diffusion doping does not require an 1100°C annealing for the repair of crystal damage. Thus, the desired Mg doping profile can be maintained by the end of device fabrication, which is the key to achieving a high blocking voltage with Mg-doped CBL. In addition, diffusion doping can easily form a much deeper dope junction and be very useful for high-voltage and super-junction devices.
Recently, we have demonstrated the first Ga2O3 vertical-diffused-barrier field-effect transistor (or VDBFET) utilizing a Mg-diffusion doped CBL with a spin-on-glass source. The transistor exhibited excellent FET behavior with decent saturation, enhancement-mode operation, and an on/off ratio of more than 109. However, the breakdown voltage is measured to be only 72V most likely due to the punch-through of the Mg-diffused CBL. This is likely caused by a lower-than-expected Mg doping rendering an inefficient electron blocking. In addition, SIMS analysis indicated the existence of Mg-H complex that deactivated the Mg. Thus, the effective Mg doping is even lower than its chemical concentration. Here we will discuss a new strategy to resolve this problem and showcase the characteristics of the improved CBL with a higher breakdown. This development paves the way for the development of high-voltage Ga2O3 VDBFETs.