bluuebunny/crossref_metadata_2025_split huggingface dataset:
Robust True LDO Linear Voltage Regulator and Digitally Trimmable Buffered Precision Voltage Reference for High-Temperature, Low-Voltage Applications
Authors: Dusé Yoann , Laplace Fabien , Joubert Nicolas , Montmayeur Xavier , Zitouni Noureddine , Vieusses Sebastien , Thepaut Gregory , Anota Arnaud , Picun Gonzalo 
Published: October 2015

We present in this paper two new products for high-temperature, low-voltage (2.8V to 5.5V) power management applications. The first product is an original implementation of a monolithic low dropout regulator (XTR70010), able to deliver up to 1A at 230°C with less than 1V of dropout. This new voltage regulator can source an output current level up to 1.5A. The regulated output voltage can be selected among 32 preset values from 0.5V to 3.6V in steps of 100mV, or it can be obtained with a pair of external resistors. The circuit integrates complex analog and digital control blocks providing state of the art features such as UVLO protection, chip enable control, soft start-up and soft shut-down, hiccup short-circuit protection, customer selectable thermal shut-down, input power supply protection, output overshoot remover and stability over an extremely wide range of load capacitances. The circuit offers a fair ±2% absolute accuracy and is guaranteed latch-up free.
The second product is an advanced high-temperature, low-power, digitally trimmable voltage reference (XTR75020). Thanks to a custom, 1-wire serial interface, the absolute precision and the temperature coefficient can be adjusted in order to obtain an accuracy better than 0.5% with a temperature coefficient bellow ±20ppm/°C. On-chip OTP memory for trimming of absolute value and temperature coefficient makes the circuit extremely accurate and almost insensitive to drifts over time and temperature. The circuit features a class AB output buffer able to source or sink up to 5mA and remains stable with any load capacitance up to 50μF. The XTR75020 has nine preset possible output voltages. The source and sink short circuit current always remains bellow 25mA. The quiescent current consumption is 300μA typical at 230°C while the standby current is, in all cases, under 20μA.
Both devices are designed on a latch-up free silicon-on-insulator process.
ESEM as a Tool for Studying High Temperature Electronics
Authors: Svensson Stefan , Ericson Fredric , Hjort Klas , Klintberg Lena 
Published: October 2015

Researchers studying materials and processes at high temperatures are often restricted to do evaluation afterwards and at room temperature using e.g. scanning electron microscopy (SEM). Limited by high vacuum, outgassing and non-conducting samples are difficult to study with SEM. For such samples, environmental scanning electron microscope (ESEM) is an alternative that is particularly suited also for high temperature in-situ studies. The electron detector in the ESEM make use of otherwise unwanted scattering of electrons as an amplifier of the signal, and by using differential pumping, it is possible to introduce several mbar of either oxygen, water vapor, or a gas of choice into the sample chamber while still maintaining the high-vacuum in the electron column. The auxiliary gas neutralizes surface charges built up by the electron beam, which makes it possible to image non-conductive and outgassing samples, thus making it possible to study e.g. polymeric and high temperature materials. Our ESEM, FEI XL30, have a heating stage making it possible to reach temperatures up to 1500°C. Equipped with electrical feed-throughs, the instrument can be used to study high temperature phenomena on electrically activated components.
ESEM is an instrument that has found its use for biological and organic samples. However, less work has been done using it for high temperature processes. Here, we show real-time imaging of the sintering of dielectric and Ag thick-film prints on AlN substrates. The use of the electrical feed-throughs to activate electrical components and study them at high temperatures is also demonstrated. ESEM is a versatile tool for high temperature studies and in-situ analysis of electrical components, solder processes and different die-attach materials.
250°C Operating Temperature Dielectric Film Capacitors
Authors: Donhowe Mark , Lawler Jeff , Souffie Sean , Stein E. Lee 
Published: October 2015

High operating temperature electronic components are needed for a variety of military, aerospace, down-hole, and electric vehicle applications. One of the limiting technologies is the availability of highly reliable capacitors that operate at temperatures greater than 150°C and up through 250°C.
This paper introduces a high breakdown strength dielectric film Gore has developed for metallized film capacitors. In addition to exceptionally high breakdown voltages, the 6 μm PTFE film exhibits low dissipation factor and stable capacitance over a wide temperature range. Film properties were tested from −50°C to 250°C and both wound film/foil and metallized film capacitors were fabricated and tested from RT to 300°C.
High Temperature Silicon Carbide CMOS Integrated Circuits
Authors: Thompson R.F. , Clark D.T. , Murphy A.E. , Ramsay E.P , Smith D.A , Young R.A.R. , Cormack J.D. , McGonigal J. , Fletcher J. , Zhu C. , Finney S. , Martin L.C. , Horsfall A.B. 
Published: October 2015

The wide band-gap of Silicon Carbide makes it a material suitable for IC's [1] operating up to 450°C. The maximum operating temperature achieved will depend on the transistor technology selected, interconnect metallisation and device packaging. This paper describes transistor and circuit results achieved in SiC CMOS technology, where the major issue addressed is the gate dielectric performance.
N and p-channel MOSFET structures have been demonstrated operating at temperatures up to 400°C Test circuits including simple logic cells, ring oscillators, operational amplifiers and gate drive circuits have been fabricated and the characteristics of ring oscillators are presented here. Floating capacitor structures have also been fabricated for use in future analogue and mixed signal circuits.
This technology will be initially applied in applications including signal conditioning for sensors and control of SiC based power switching devices, where the high temperature capability will match that of the SiC power devices which are now becoming commercially available.
A Fully Functional Extreme Environment SiC Wireless Temperature Sensing System
Authors: Yang Jie , Fraley John R , Western Bryon , Schupbach Roberto M. 
Published: October 2015

Researchers at Arkansas Power Electronics International, Inc. (APEI, Inc.) have designed and developed a patent pending Silicon Carbide (SiC) wireless temperature sensing system that is capable of operation under extreme temperature and mechanical loads, such as inside a gas turbine engine. High operating temperatures and centrifugal forces in the tens of thousands within the region of the gas turbine engine where the circuits are to be located, exceed the capability of Silicon-on-Insulator (SOI) integrated circuits. The system is designed to be non-intrusively embedded within the turbine engine to provide real-time health monitoring of critical turbine engine components.
The SiC based wireless temperature sensing system is designed in conjunction with a high temperature thermocouple to acquire the temperature information on turbine blades or other components inside turbine engine. It has been verified through high temperature laboratory testing, up to the desired temperature level. The combination of this extreme temperature wireless telemetry technology and integrated harsh environment sensors will allow for specific in-situ maintenance of power generation and aircraft turbines during field operation. This combination can also be applied to many other industries that require extreme environment monitoring and maintenance, one example would be nuclear reactors. This form of preventative maintenance may help to reduce maintenance cost, increase operational safety, and prevent possible catastrophic failures.
Enabling Bulk Silicon CMOS Technology for Integration, Reliability, and Extended Lifetime at High Temperature
Authors: Lowther Rex , Gifford David , Morris Wesley , Jensen Jim , Peterson Scott , Atkinson Kevin 
Published: October 2015

Silicon Space Technology has developed a commercial bulk CMOS process technology, HardSIL™, which allows optimization of performance, power, and lifetime at high temperatures. A method for preventing latchup, originally developed for use in the space radiation environment, is presently applied to terrestrial high-temperature environments. With the possibility of latchup eliminated in scaled CMOS technology nodes, further designs specific for high-temperature environments have proceeded well. This novel technology has been applied to our 18Mb synchronous burst SBRAM and our ARM® Cortex® M0 microcontroller, and in two CMOS processes at the 130nm technology node (Texas Instruments and GLOBALFOUNDRIES). Extensive temperature testing on these parts demonstrates that bulk silicon CMOS technology has a practical temperature limit of 250°C or higher.
Both the microcontroller and the SBRAM have been tested with clock rates up to 70MHz and at temperatures up to 260°C. Both parts have performed without error and without latchup under these conditions, and with low operating current and low leakage current. For example, the 130 million-transistor 18Mb SBRAM has average core leakage current of 580mA at 250°C and core voltage of 1.5V with test lots and simulations showing further reduction in leakage in the next, terrestrial version of this part. In addition, the 18Mb SBRAM is undergoing an endurance test at 250°C, presently at the 2500 hour milestone. Operation at temperatures beyond the present limit of the testing equipment (260°C) appears possible from extrapolation of current data.
Integration levels of greater than 8 million gates on a bulk CMOS device would allow multi-core processors with large on-chip secondary caches. Additional DSP engines or other compute engines can be accommodated for processing high resolution three dimensional images in real time. This would provide substantial distributed processing in drilling or jet engine control. These system-on-chip (SOC) integration levels can substantially reduce mechanical failures in a subsystem by reducing the number of wire bonds from greater than 1000 connections to less than 100 connections. Integration of mixed-signal A/Ds and D/As as well as on-chip power management provides a path to further reduction in mechanical connections in a sub-system.
The Design and Characterization of an 8-bit ADC for 250°C Operation
Authors: Reed Lynn , Hoenig John , Reddy Vema 
Published: October 2015

Many high temperature applications require the measurement of analog voltages. This usually requires the integration of an ADC into the design. While the temperature degradation in performance of digital circuits is well known, the effects of temperature on analog circuitry are much harder to predict. Analog design is often an iterative process in which the characterization knowledge of a fabricated design is used to improve the next iteration of the design. This paper presents the results of the most recent iteration.
This paper describes how the design of an existing 8-bit ADC was optimized for the SOI process. It also presents the characterization of the ADC at various temperatures up to 250°C and shows the effects of increased leakage on the ADC parameters of linearity, accuracy, and conversion speed.
The ADC discussed is a successive approximation design which uses a resistive DAC. The design was modified to take advantage of the resistive characteristics inherent in the SOI process. Specifically, the DAC resistors were formed using N-type diffusion because of their superior matching as compared to using poly. The analog circuitry in the DAC switching and in the comparator required carefully choosing where to use “A” type versus “H” type transistor geometries to prevent inadvertent SCR failures. The ADC design also included a serial interface circuit that facilitates measurements within an oven by minimizing the number of connections required for operation.
The measurements were taken using a 12-bit DAC to generate the analog input voltages to the 8-bit ADC under test. The ADC digital output was compared to the digital input to the DAC. All 4096 measurement points were taken at each voltage and temperature step. The results of these measurements were post-processed to extract the characterization data.
There is a discussion of the results, the effects of leakage on those results, and how these effects might be overcome to produce more accurate ADC circuits in the future.
High Temperature Protection against Unwanted Species within Hermetic Packaging
Authors: Williams Jennifer , Matthey Johnson 
Published: October 2015

The need for electronic applications to be able to withstand high temperatures has become more prevalent in recent years. With drilling in the oil and gas industry getting deeper, the operating temperatures are getting higher, with typical geothermal gradients of 25 °C/km.
Temperatures up to 250 °C are often seen by drilling operations, which is putting a greater strain on the electronics and associated packaging. Standard methods of cooling are not viable for these harsh environments, so new technology is required to negate the effects of the extreme temperatures. As well as the use of high temperature stable electronic components, High Temperature Getters are required to remove gaseous contaminants from electronic housings to negate the associated deleterious effect on performance.
The contaminating species to be removed are commonly H2O, CO2, and H2, and sometimes short chain organic molecules. Conventional getter materials can remove damaging species at temperatures up to about 80 °C. New technology is however required to eliminate these species at temperatures up to 250 °C, where existing getter formulations would certainly fail.
Johnson Matthey has developed a range of getters that can remove multiple contaminants at both ambient and elevated temperatures. The first product in the series, HTA 1 can remove water and carbon dioxide. Addition of a metal oxide component in HTA 2 facilitates hydrogen removal at elevated temperatures, with capacities in excess of 70 cm3/g achieved. HTA 3 can adsorb unwanted organic contaminants in addition to removing water and carbon dioxide. HTA 4 is a combined getter capable of eliminating all of the aforementioned contaminant species.
These products, combined with the unique, precision engineered Hi-Rel encapsulation (Figure 1) allow getters to be supplied pre-activated, without the end user needing to apply a thermal treatment prior to use. The product can be fitted into any hermetic device to extend the lifetime, thus decreasing the number of failures within electronic assemblies, improving system reliability and preventing operations being shut down as frequently.
High Temperature Anisotropic Magnetoresistive (AMR) Sensors
Authors: Pant Bharat B. , Withanawasam Lucky , Bohlinger Mike , Larson Mark , Ohme Bruce W. 
Published: October 2015

Magnetic field sensors are employed in down-hole oil, gas, and geothermal well-drilling applications for azimuth sensing, orientation/rotation sensing, and magnetic anomaly detection. Key requirements of these applications include high measurement accuracy in the near-DC frequency regime, high-operating temperatures, high mechanical shock and vibration, and severe size constraints. Silicon manufacturing processes enable the development of rugged components with small size compatible with assembly processes used for adjacent electronics in hermetically sealed hybrid and/or ceramic packages.
Silicon-based magnetic sensors include Anistotropic Magnetoresistive (AMR), Giant Magnetoresistive (GMR) and Tunnelling Magnetoresistive (TMR) sensors. Commercially available GMR and TMR sensors generally cannot be operated much above 150°C. While GMR and TMR have enabled great areal density growth for magnetic recording industry over the past two decades, AMR sensors provide high accuracy measurements in the near-DC regime above 150°C. This is in part due to simplicity of their construction, but also due to their low noise characteristics at low frequencies compared to GMR and TMR. This paper will describe the extension of Honeywell's low noise AMR sensors into high temperature regime up to 225°C.
Sensors being reported have room temperature bridge resistance of ~700 Ω, open loop sensitivity of ~2.5 mV/V-Gauss, with a temperature coefficient of sensitivity of −2500 ppm/°C. The low-frequency minimum detectable field monotonically increases with increasing temperature. At room temperature it is ~2.2 μG/√Hz@1 Hz and reaches a value of ~26μG/√Hz@1 Hz at 225°C. Signal and noise density both increase with increasing sensor bias voltage such that low-frequency signal-to-noise ratio does not vary in the bias voltage range of 2.5 V to 10V.
These sensors have also been configured in a closed loop format using low noise electronics. Measurements of closed loop transfer function in the range of ±0.8 Gauss were made. The sensor was placed in a thermal chamber while the feedback electronics were placed outside at room temperature. The linearity of the transfer function is quite excellent; deviation from linearity increases monotonically with increasing temperature reaching &lt; 0.002% of full scale or 29 μGauss at 225°C. Closed loop operation of a typical sensor shows 1-σ measurement variability of 21 μGauss at 220°C. By a combination of averaging and closed loop operation an input step from 0 to 75 μGauss is replicated at the output to within 0.1 μG at 225°C.
A High Temperature, Frequency Output Silicon Temperature Sensor
Authors: Rose Shane , Hahn Mark 
Published: October 2015

Precision high temperature sensors often require temperature compensation. Quartzdyne pressure transducers use a temperature sensitive quartz crystal for compensation. In an effort to shrink transducer packaging, and increase reliability; a prototype frequency output temperature sensor was designed using a 0.8um silicon bulk CMOS process.
The 250°C operational sensor is based on a PTAT current generator. The design uses high temperature design techniques that were proven reliable in prior Quartzdyne ASIC's. The output frequency is 34kHz at 30°C, with a sensitivity of 100Hz/°C and achievable accuracy of ±0.3°C from 25°C to 200°C. This paper will review the sensor's characteristics, including the output linearity, hysteresis, accelerated aging and temperature cycling to demonstrate the performance and long term reliability and repeatability of the sensor.
Characterization of Substrate Materials For End-Use Environment Classification
Authors: Ahmad Syed Sajid , Shankaran Arun , Haring Fred , Vignes Justin , Scholz Bernd , Reinholz Aaron 
Published: October 2015

With the expansion of the use of sensors in everyday life, especially in medical and security fields, it has become pertinent that a substrate be chosen which is not only compatible with the sensor functionality and its manufacturing flow but also with the use environment of the sensor.
Roll-to-roll manufacturability is also an important consideration along with the quality, reliability and cost of the end product. Material advances have provided a wide variety of choices which need to be studied and understood for competitive applications.
In this study, a sample of the results of the evaluation of selected substrate materials are presented. This effort helps provide a reference database and comparison to choose a material for a particular application and application environment.
Immersion Silver as Universal Surface Finish for COB Technology
Authors: Goehre J. , Schneider-Ramelow M. , Becker K.-F. , Hutter M. 
Published: October 2015

Immersion Ag is currently being discussed as an innovative alternative to Ni/Au and Ni/Pd/Au metallization for PCBs in COB technology. Its advantages over conventional metallizations include its non-toxicity, due to the absence of Ni, and significantly lower costs, as Au and Pd are not required. Immersion Ag is also easily processed in die attach or SMD processes using adhesives or solder and is compatible with wire bonding. The first generations of immersion Ag in the 1990s were handicapped by a lack of storage capability. The Ag quickly reacted with oxygen and sulfur in the surrounding atmosphere and, after only a few hours of storage, high quality wire bonding was no longer viable. The current generation of immersion Ag was primarily developed to ensure long-term processability for solder technology. However, its suitability for wire bonding and other COB processes, such as glob topping, after periods of storage in non-inert atmospheres had not yet been verified.
This paper addresses this issue, presenting the results of wire bonding tests in initial state and after periods of storage in inert and non-inert atmosphere, as well as after die attach processes using adhesives and solder. In addition, the suitability of immersion Ag for die attach with adhesives and solder, as well as processability for glob-top encapsulation, was investigated. Finally, the results from reliability tests on open and encapsulated samples are presented. The results show that wire bonding on immersion Ag yields bonds of high initial quality and superior reliability even after storage in non-inert atmosphere for several months prior to wire bonding. The same was true of samples that had been exposed to soldering or gluing processes. In addition, immersion Ag performed exceptionally well in other COB processes, confirming its suitability as a universal surface finish for COB technology.
Chip Embedding for Printed Circuit Boards and Subsystems
Authors: Gottwald Thomas , Neumann Alexander 
Published: October 2015

The reason for chip embedding by means of PCB technology are manifold. Actually there are several emerging technologies on the market which all face one common problem: To realize the escape routing of a high pin count die one has to use several build up layers or very fine lines & spaces for the PCB. Both approaches have a significant influence on the cost of a electrical component because both solutions raise the manufacturing complexity. Due to this problem approaches like “chip first” or “chip last” are being discussed in plenty of papers.
With this paper, an alternative way of producing embedded systems is mentioned, which overcomes many of the actual problems.
Correlation of Dispense Characteristics of Conductive Inks to Substrate Temperature
Authors: Haring Fred , Vignes Justin , Ahmad Syed Sajid , Shankaran Arun , Gerstner Kaycie , Dahlman Nicole , Reinholz Aaron 
Published: October 2015

Formation of conductors on a substrate can be achieved by dispensing conductive materials on its surface. The quality and reliability of these conductors depends upon the ink characteristics, substrate characteristics and the dispensing parameters.
In this study, two materials were dispensed on a substrate commonly used in the industry at various temperatures. Results of the effect of substrate temperature on the quality of conductors dispensed on it are presented. The line width, its cross section area and its resistance and resistivity were measured at increasing temperature of the substrate and correlated to the substrate temperature.