bluuebunny/crossref_metadata_2025_split huggingface dataset:
An analysis of China's grain production: looking back and looking forward
Authors: Li Yuxuan , Zhang Weifeng , Ma Lin , Wu Liang , Shen Jianbo , Davies William J. , Oenema Oene , Zhang Fusuo , Dou Zhengxia 
Published: December 2013

AbstractEnsuring food security is the foundation of economic development and social stability. China is historically a country that is dominated by agriculture. In the past 60 years, China's total grain output increased by fivefold, from 113 million tons (MT) in 1949 to 571 MT in 2011, a statistic which provides inspiration to producers in other parts of the world. Grain production per capita doubled, from 209 to 425 kg during the same time period. At the national scale, China has succeeded in maintaining a basic self‐sufficiency for grain for the past three decades. However, with the increasing population pressure and a growing appetite for animal products, China will need 776 MT grain by 2030 to feed its own people, a net increase of 35.9% from its best year on record. China's drive for future food security is challenged by problems such as low efficiency of resource use and resource limitation, diminishing return in yield response, competition for nonagricultural land uses, and environmental degradation. In this article, we analyze historical, temporal, and spatial variation in total grain production as well as the overall developing trends of current and future grain production, and discussed relevant options to overcome production constraints and further promote agricultural production.
Preparation of Pt@SnO2 Core‐Shell Nanoparticles for Photocatalytic Degradation of Formaldehyde
Authors: Chang Ya‐Chin , Yan Cheng‐Yu , Wu Ren‐Jang 
Published: December 2013

AbstractWe report the synthesis and characterization of platinum‐tin oxide core‐shell nanoparticles (Pt@SnO2) for use as a photocatalyst for formaldehyde (HCHO) degradation. We used a sol‐gel process followed by calcination to prepare the Pt@SnO2 photocatalyst. Transmission Electron Microscopy (TEM) revealed that the average Pt core diameter was 7‐10 nm in diameter, and the SnO2 shell was approximately 2 nm thick. UV‐Visible spectroscopy displayed the peak from the Pt@SnO2 core‐shell structures is red‐shifted by 16 nm from that of the Pt nanoparticles. We determined photocatalytic activity by irradiating formaldehyde gas in the presence of nanoparticle samples with an 18 W daylight lamp for 180 min. The irradiated Pt@SnO2 nanoparticles achieved 93.2% formaldehyde degradation, while TiO2 (P25), SnO2, and 1 wt.% Pt/SnO2 achieved 70.1%, 67.5%, and 66.0% respectively. Thus, Pt@SnO2 was the most effective material for the degradation of formaldehyde, demonstrating its potential for use as a high efficiency photocatalyst for the degradation of formaldehyde.
Synthesis of β‐Haloketones by β‐Addition Reactions of α,β‐Unsaturated Ketones with BX3 (X = Br, Cl) as Halide Source
Authors: Lee Adam Shih‐Yuan , Wang Shu‐Huei , Chang Yu‐Ting 
Published: December 2013

AbstractA series of β‐bromoketones and β‐chloroketones were synthesized by the addition reactions of α,β‐unsaturated ketones under BX3 (X = Br, Cl) and ethylene glycol reaction system. The α,β‐unsaturated ester also was successfully converted to its corresponding β‐bromoester under the reaction condition.
Transitions between Electron Transporting Mechanisms in Molecular Junctions and Transistors
Authors: Kuo Chun‐Ting , Su Li‐Chen , Chen Chun‐hsien 
Published: December 2013

AbstractOn the extraordinary journey cruising into the interdisciplinary field of molecular electronics by experimentalists, many of the proposed mechanisms for electron transporting across molecular junctions have been witnessed, such as hopping, direct tunneling, thermionic emission, and field emission. For a newcomer to this research field, the terms of the mechanisms can be confusing. This mini‐review is intended to provide a very elementary introduction to the basics of the mechanisms with the help of selected literature examples to make the concept less abstract. In addition to the definition of terminologies used in molecular electronics, the correlation of experimental conditions with the pathways of electron transport is emphasized.
Really Understanding Layered Vanadyl Phosphate Hydrates
Authors: Huang Hui‐Lin , Lii Kwang‐Hwa , Wang Sue‐Lein 
Published: December 2013

AbstractLayered vanadyl phosphate hydrates with the V/P ratio of 1:1 represent an important class of low‐dimensional phosphate structures as they are of great interest in intercalation chemistry in association with redox catalytic reactions and innovation of light and energy‐saving materials. The inorganic layer of VOPO4 is simple chemically, but is actually complex in inner‐ and inter‐layer structures, and can be based on to induce a diversity of new topologies. There have been obstacles in synthesis as to exploring viable synthetic strategy and understanding the structures in depth. This review provides an up‐to‐date survey to two‐dimensional structures based on 4‐connected VOPO4 layer. For this, all examples so far reported are investigated and presented, including manipulative synthetic parameters, shared structure features, influence of water content in coordination sphere or as guest, and template size and type effects, control of interlayer spacing, and chemical tailoring the inorganicVOPO4 layer.
Medial meniscal displacement and strain in three dimensions under compressive loads: MR assessment
Authors: Freutel Maren , Seitz Andreas M. , Galbusera Fabio , Bornstedt Axel , Rasche Volker , Knothe Tate Melissa L. , Ignatius Anita , Dürselen Lutz 
Published: December 2013

PurposeTo investigate the 3D displacement and the local strain of the medial meniscus and its attachments under compressive loading.Materials and MethodsMagnetic resonance imaging (MRI) scans of six porcine knee joints were performed under unloaded and loaded conditions (100% and 200% body weight [BW]). Volumes were registered to obtain a 3D displacement field of the medial meniscus and its attachments, which were divided into five anatomic compartments. Finally, displacements of the center of mass of each compartment and the local strain were analyzed.ResultsThe meniscus and its attachments significantly displaced by up to 2.6 ± 1.2 mm (P < 0.01) under knee joint loads of 200% BW. An increase of 0.9 mm in the distance between posterior and anterior horn (P < 0.001) was observed. The meniscus and its attachment showed an average radial stretch of 0.6%, an average circumferential stretch of 0.9%, and an average axial compression of 11.6% at 200% BW.ConclusionHigh‐resolution MRI was successfully combined with image registration to investigate the displacement and strain of the meniscus and its attachments under compression. The results of this study contribute to the basic understanding of meniscal movement which may impact the design of meniscal implants and the validation of finite element models in the future.J. Magn. Reson. Imaging 2014;40:1181–1188. © 2013 Wiley Periodicals, Inc.
Systematic Studies of Morphological Changes of Precision Polyethylene
Authors: Few Chip S. , Wagener Kenneth B. , Thompson Donovan L. 
Published: December 2013

The morphological changes of polyethylenes bearing precisely spaced “defects” are reviewed, focusing on the effects of defect frequency, size, and functionality on crystallization and crystalline structure. The precise defect interval is imparted through acyclic diene metathesis polymerization of structurally symmetric diene monomers. Studies have included structural characterization by differential scanning calorimetry, wide‐angle X‐ray scattering, small‐angle X‐ray scattering (SAXS), and infrared spectroscopy. The collective results are presented separately for functionalized polyethylenes and for those containing alkyl chain branches, as these two classes of polymers vary greatly in morphology.
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Straightforward RAFT Procedure for the Synthesis of Heterotelechelic Poly(acrylamide)s
Authors: Wallyn Sofie , Zhang Zhiyue , Driessen Frank , Pietrasik Joanna , De Geest Bruno G. , Hoogenboom Richard , Du Prez Filip E. 
Published: December 2013

Heterotelechelic, hydrophilic polymers with a primary amine and thiol group at the α– and ω‐chain end, respectively, are synthesized via reversible addition–fragmentation chain transfer (RAFT) polymerization in a straightforward and versatile way and subsequently used for the design of dual‐responsive polymer/gold nanohybrids. Therefore, a phthalimido‐containing chain transfer agent (CTA) is synthesized and used for the polymerization of the hydrophilic monomers N‐isopropylacrylamide (NIPAM) and N,N‐dimethylacrylamide (DMA). After polymerization, the trithiocarbonate functionality at the ω‐chain end, originating from the CTA, is converted into a thiol upon aminolysis. In the next step, the phthalimido α‐chain end is hydrolyzed into a primary amine, resulting in heterotelechelic, hydrophilic polymers. End‐group conversions are monitored by 1H NMR spectroscopy, MALDI‐TOF MS analysis, and UV–Vis spectroscopy, confirming that quantitative modifications are obtained during each stage. The amino groups of these heterotelechelic polymer chains are modified with citraconic anhydride, after which the obtained polymers are grafted with the thiol group onto citrate‐stabilized gold nanoparticles resulting in the creation of dual‐temperature‐ and pH‐responsive gold particles.
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Incorporation of 5‐Hydroxyindazole into the Self‐Polymerization of Dopamine for Novel Polymer Synthesis
Authors: Peterson Matthew B. , Le‐Masurier Solomon P. , Lim Khoon , Hook James M. , Martens Penny , Granville Anthony M. 
Published: December 2013

Investigation into the mussel‐inspired polymerization of dopamine has led to the realization that other compounds possessing potential quinone structures could undergo similar self‐polymerizations in mild buffered aqueous conditions. To this end, 5‐hydroxyindazole was added to a dopamine polymerization matrix in varying amounts, to study its incorporation into a polydopamine coating of silica particles. Solid‐state 13C NMR spectroscopy confirmed the presence of the indazole in the polymer shell when coated onto silica gel. SEM and DLS analysis also confirmed that the presence of the indazole in the reaction matrix yielded monodisperse polymer‐coated particles, which retained their polymer shell upon HF etching, except when high levels of the indazole were used. Characterization data and examination of incorporation mechanism suggests that the 5‐hydroxyindazole performs the function of a chain‐terminating agent. Cytotoxicity studies of the polymer particles containing 5‐hydroxyindazole showed dramatically lower toxicity levels compared to polydopamine alone.
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Fiberfox: Facilitating the creation of realistic white matter software phantoms
Authors: Neher Peter F. , Laun Frederik B. , Stieltjes Bram , Maier‐Hein Klaus H. 
Published: December 2013

PurposePhantom‐based validation of diffusion‐weighted image processing techniques is an important key to innovation in the field and is widely used. Openly available and user friendly tools for the flexible generation of tailor‐made datasets for the specific tasks at hand can greatly facilitate the work of researchers around the world.MethodsWe present an open‐source framework, Fiberfox, that enables (1) the intuitive definition of arbitrary artificial white matter fiber tracts, (2) signal generation from those fibers by means of the most recent multi‐compartment modeling techniques, and (3) simulation of the actual MR acquisition that allows for the introduction of realistic MRI‐related effects into the final image.ResultsWe show that real acquisitions can be closely approximated by simulating the acquisition of the well‐known FiberCup phantom. We further demonstrate the advantages of our framework by evaluating the effects of imaging artifacts and acquisition settings on the outcome of 12 tractography algorithms.ConclusionOur findings suggest that experiments on a realistic software phantom might change the conclusions drawn from earlier hardware phantom experiments. Fiberfox may find application in validating and further developing methods such as tractography, super‐resolution, diffusion modeling or artifact correction. Magn Reson Med 72:1460–1470, 2014. © 2013 Wiley Periodicals, Inc.
Perceived emotional invalidation and borderline personality disorder features: A test of theory
Authors: Sturrock Bonnie , Mellor David 
Published: December 2013

ABSTRACTContemporary theories of borderline personality disorder (BPD) have detailed the functional importance of emotional invalidation in meaningful relationships as an aetiological and perpetuating factor of its core disturbances. The purpose of our study was to test aspects of Linehan's (1993) biosocial and Fruzzetti (1996) and Fruzzetti, Shenk, and Hoffman's (2005) validation/invalidation family interactions transactional theories in a community sample of 186 participants. Results indicated that a multi‐mediational path model of invalidation in meaningful relationships, emotion dysregulation, poor distress tolerance and BPD symptoms provided a perfect fit to the data and accounted for a substantial amount of variance in BPD (38%). The results provided support for these complimentary theories of BPD, which hold promise for clinical applications and future research. Copyright © 2013 John Wiley & Sons, Ltd.
Sequence, biophysical, and structural analyses of the PstS lipoprotein (BB0215) from Borrelia burgdorferi reveal a likely binding component of an ABC‐type phosphate transporter
Authors: Brautigam Chad A. , Ouyang Zhiming , Deka Ranjit K. , Norgard Michael V. 
Published: December 2013

AbstractThe Lyme disease agent Borrelia burgdorferi, which is transmitted via a tick vector, is dependent on its tick and mammalian hosts for a number of essential nutrients. Like other bacterial diderms, it must transport these biochemicals from the extracellular milieu across two membranes, ultimately to the B. burgdorferi cytoplasm. In the current study, we established that a gene cluster comprising genes bb0215 through bb0218 is cotranscribed and is therefore an operon. Sequence analysis of these proteins suggested that they are the components of an ABC‐type transporter responsible for translocating phosphate anions from the B. burgdorferi periplasm to the cytoplasm. Biophysical experiments established that the putative ligand‐binding protein of this system, BbPstS (BB0215), binds to phosphate in solution. We determined the high‐resolution (1.3 Å) crystal structure of the protein in the absence of phosphate, revealing that the protein's fold is similar to other phosphate‐binding proteins, and residues that are implicated in phosphate binding in other such proteins are conserved in BbPstS. Taken together, the gene products of bb0215‐0218 function as a phosphate transporter for B. burgdorferi.
Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing
Authors: Zhang X. , Ma X. , Gao C. , Xu T. , Zhao J. , Dong P. , Vanhellemont J. 
Published: December 2013

AbstractThe resistivity change of low resistivity Si substrates by rapid thermal processing (RTP) and subsequent low tem‐perature annealing is reported. The observed resistivity increase after RTP can be explained by dopant deactivation due to trapping by dopant atoms of intrinsic point defects created during the high temperature step. Similar dopant deactivation is observed during growth of low resistivity single crystals or epitaxial layers.The stability of the intrinsic point defect‐dopant clusters and the recovery of resistivity is studied by low temperature anneals ranging from 300 to 650 °C. Results are presented on As (3‐5 mΩcm), P (1‐2 mΩcm), (17‐18 mΩcm) and B (16‐17 mΩcm) doped Si substrates. The observations are explained on the basis of a continuum model for intrinsic point point defect trapping by dopants. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Design and simulation of optically controlled field effect transistors
Authors: Sorianello V. , Colace L. , Rajamani S. , Assanto G. 
Published: December 2013

AbstractTechnology roadmaps identify the transmission bottleneck as one of the major challenges at high frequencies and in compact geometries. Increasing bandwidth and massive data processing prompt for the use of optics over short distances, down to board‐to‐board, chip‐to‐chip and even intra‐chip. In this framework, optical to electric converters are key elements. We investigate the feasibility of an optically controlled field effect transistor (FET), a device capable of switching when driven by light (rather than voltage) thanks to a photosensitive gate. We develop a physical model in order to simulate with TCAD the modulation of FET channel conductivity, using drift‐diffusion with optical generation. Current modulation of more than one order of magnitude with 1 µW optical power and time response lower than 100 ps can be achieved. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
New RP‐CVD grown ultra‐high performance selectively B‐doped pure‐Ge 20 nm QWs on (100)Si as basis material for post‐Si CMOS technology
Authors: Mironov O. A. , Hassan A. H. A. , Uhlarz M. , Kiatgamolchai S. , Dobbie A. , Morris R. J. H. , Halpin J. E. , Rhead S. D. , Allred P. , Myronov M. , Gabani S. , Berkutov I. B. , Leadley D. R. 
Published: December 2013

AbstractMagnetotransport studies at low and room temperature are presented for two‐dimensional hole gases (2DHG) formed in fully strained germanium (sGe) quantum wells (QW). Two designs of modulation doped heterostructure grown by reduced pressure chemical vapour deposition (RP‐CVD) were used and included a normal structure (doping above the Ge channel and inverted structure (doping beneath the Ge channel). The mobility (μH) for the normal structure was measured to be 1.34×106 cm2/Vs with a sheet density (ps) of 2.9×1011cm‐2at 1.5 K, and μH= 3970 cm2/Vs and ps ∼1×1011cm‐2 for room temperature, determined from simulation using the Maximum Entropy‐Mobility Spectrum Analysis (ME‐MSA) method.For the inverted structure a μH of 4.96×105 cm2/Vs and ps of 5.25×1011cm‐2was measured at 90 mK. From the temperature dependent amplitude of Shubnikov de Haas oscillations, the normal structure was found to have a very low effective mass (m*) value of 0.063 m0 and a ratio of transport to quantum lifetime (α) of ∼78. This extremely high α is indicative of the carrier transport being dominated by small angle scattering from remote impurities i.e. a sample having an extremely low background impurity level and very smooth hetero‐interfaces. The inverted structure had an m*of 0.069 m0 and α ∼29, which also indicates exceedingly high quality material. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electrical and optical characterization of extended defects induced in p‐type Si after Si ion implantation
Authors: Nyamhere Cloud , Cristiano Fuccio , Olivie Francios , Bedel‐Pereira Elena , Essa Zahi 
Published: December 2013

AbstractIn this work we present the analysis of small interstitial clusters (ICs) introduced in p‐type Si after ion implantation using deep level transient spectroscopy (DLTS) and photoluminescence. Silicon ions with energy 380 keV and fluence of 1.0 x 1012 cm‐2 have been implanted into bulk p‐type Si and post‐implant annealing at temperatures between 500 oC and 800 oC specifically to create small interstitial cluster (ICs) defects. In the samples annealed at 500 oC, DLTS spectra show deep level hole traps at EV + 0.20 eV, EV + 0.25 eV, EV + 0.36 eV, and EV + 0.50 eV. The hole traps EV + 0.36 eV and EV + 0.50 eV have been attributed to the small Si self‐interstitial clusters. After increasing the post‐implant anneals to 600 oC there is a significant decrease in defect concentration and all the defects are annealed‐out at 700 oC. Photoluminescence (PL) spectroscopy of the samples reveals optical band levels, at 1218 nm (1.019 eV), and 1233 nm (1.007 eV) which have both been attributed to interstitial cluster defects. The interstitial cluster‐related optical band levels have been observed in the samples annealed at 500 oC which correlate well with DLTS measurements. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Atomic scale Monte Carlo simulations of BF3 plasma immersion ion implantation in Si
Authors: La Magna Antonino , Fisicaro Giuseppe , Nicotra Giuseppe , Spiegel Yohann , Torregrosa Frank 
Published: December 2013

AbstractWe present a numerical model aimed to accurately simulate the plasma immersion ion implantation (PIII) process in micro and nano‐patterned Si samples. The code, based on the Monte Carlo approach, is designed to reproduce all the relevant physical phenomena involved in the process. The particle based simulation technique is fundamental to efficiently compute the material modifications promoted by the plasma implantation at the atomic resolution. The accuracy in the description of the process kinetic is achieved linking (one to one) each virtual Monte Carlo event to each possible atomic phenomenon (e.g. ion penetration, neutral absorption, ion induced surface modification, etc.). The code is designed to be coupled with a generic plasma status, characterized by the particle types (ions and neutrals), their flow rates and their energy/angle distributions. The coupling with a Poisson solver allows the simulation of the correct trajectories of charged particles in the void regions of the micro‐structures. The implemented model is able to predict the implantation 2D profiles and significantly support the process design. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells
Authors: Mouis Mireille , Lee Jae Woo , Jeon Daeyoung , Shi Ming , Shin Minju , Ghibaudo Gérard 
Published: December 2013

AbstractA wealth of convergent results are indicating that point defects originating from the processing of source/drain (S/D) regions are strongly involved in many parameters that rule the operation mechanisms and ultimately the performance of transistors. One example of such effect is the mobility degradation which is observed at short gate length in most, if not all, technologies. Defects can also been traced by their implication in leakage currents. Their dynamics has been found as well to be involved in the activation/deactivation processes and the final series resistance of S/D regions, enlightening the role of additional interfaces that are being introduced with thin film SOI and nanowire technologies. These complex effects, which are becoming 3D in present technologies, are very difficult to characterize by means of structural characterization. On the other hand, simulation based predictions have strongly improved. However, due to the complex processes involved, they still require the adjustment of a large number of parameters, which can usually be validated in model configurations only. In this paper we will review and complement some of our recent results obtained from electrical characterization, for a variety of advanced MOS transistor architectures, with focus on the analysis of the parameters which can be influenced by the presence of defects. It is shown that in‐depth electrical characterization can provide strong experimental indications about point defects lateral distribution, with the advantage of probing the real device. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)