bluuebunny/crossref_metadata_2025_split huggingface dataset:
Mechanism of the Suppression of Zr Silicide Formation in Poly-Si/ZrON/ZrSiON/Si Structure
Authors: Koyama Masato , Suguro Kyoichi , Hongo Chie , Koike Mitsuo , Kamimuta Yuichi , Suzuki Masamichi , Nishiyama Akira 
Published: February 2017

AbstractIn this paper, the mechanisms of the suppression of Zr-silicide formation in poly-Si/ZrON/interfacial-layer/Si structure at 1000°C annealing are discussed in detail. It was demonstrated that gaseous SiO desorption, which played a dominant role in the silicide formation in the case of the ZrO2/SiO2/Si, was completely inhibited in the ZrON/interfacial-layer/Si structure. In addition, we have found that an ultrathin interfacial SiON layer between poly-Si and ZrON stabilized the interface. Consequently, we concluded that the effective nitrogen incorporation into top/bottom interfacial SiON layers with our process was responsible for the superior thermal stability of the stack.
Effective Dielectric Thickness Scaling for High-K Gate Dielectric Mosfets
Authors: Bhuwalka Krishna Kumar , Mohapatra Nihar R. , Narendra Siva G. , Rao V Ramgopal 
Published: February 2017

AbstractIt has been shown recently that the short channel performance worsens for high-K dielectric MOSFETs as the physical thickness to the channel length ratio increases, even when the effective oxide thickness (EOT) is kept identical to that of SiO2. In this work we have systematically evaluated the effective dielectric thickness for different Kgate to achieve targeted threshold voltage (Vt), drain-induced barrier lowering (DIBL) and Ion/Ioff ratio for different technology generations down to 50 nm using 2-Dimensional process and device simulations. Our results clearly show that the oxide thickness scaling for high-K gate dielectrics and SiO2 follow different trends and the fringing field effects must be taken into account for estimation of effective dielectric thickness when SiO2 is replaced by a high-K dielectric.
Electrical Characterization of SIMOX SOI Wafers with MOSOS C-V Measurements
Authors: Li C.L. , Yu Y.H. , Chen M. , Zou S.C. , X Sh. , Lin Z.X. 
Published: February 2017

AbstractSIMOX SOI is quite attractive for IC technology because of its potential for high-speed and low power consumption. SOI wafers are required to maintain good electrical performances in the buried oxide (BOX) layers, thus it is imperative to study the electrical characteristics of the BOX layers and the interface states. C-V and I-V techniques are very frequently utilized for extracting the parameters of the Si-SiO2 interface in bulk-silicon MOS systems. In this paper, we use a new two-terminal MOSOS (metal-oxide-semiconductor-oxide-semiconductor) structure to study the electrical characteristics of SIMOX SOI wafers. Results gained from the comparison between the experimental curves and simulation curves are presented and analyzed. We show considerable improvement in comparison with results obtained using traditional methods.
Modeling Boron Diffusion in Polycrystalline HfO2 Films
Authors: Liu Chun-Li 
Published: February 2017

AbstractWe present ab-initio modeling results including formation, migration, and activation energies for B diffusion through bulk and grain boundaries in polycrystalline HfO2 films. Modeling results clearly indicate that B can penetrate through a 40 Å HfO2 film via grain boundary diffusion, but not by bulk diffusion. SIMS analysis of B concentration profiles for polysilicon/HfO2/Si gate stacks after different anneals showed double B peaks at the interfaces and thus confirmed the modeling prediction.
Is it a Right Assumption That B and Ge are Distributed Randomly After Growing a Strained HBT-Structure?
Authors: Kol'dyaev Victor I. 
Published: February 2017

AbstractIt is accepted that surface Ge atoms are considered to be responsible for the surface B segregation process. A set of original experiments is carried out. A main observation from the B and Ge profiles grown at different conditions shows that at certain conditions B is taking initiative and determine the Ge surface segregation process. basic assumptions are suggested to self-consistently explain these original experimental features and what is observed in the literature. These results have a strong implication for modeling the B diffusion in Si1-xGex where the initial conditions should be formulated accounting for the correlation in B and Ge distribution. A new assumption for the initial condition to be “all B atoms are captured by Ge” is regarded as a right one implicating that there is no any transient diffusion representing the B capturing kinetics.
Synthesis of Ordered Nanoporous Silica Film With High Structural Stability
Authors: Nishiyama Norikazu , Tanaka Shunsuke , Egashira Yoshiyuki , Oku Yoshiaki , Kamisawa Akira , Ueyama Korekazu 
Published: February 2017

AbstractA mesoporous silica film was prepared on a silicon substrate using a spin-coating process followed by a tetraethyl orthosilicate (TEOS) vapor treatment. The stability of a formed silica network before TEOS treatment is thought to be insufficient because the rate of the condensation reaction is not high at temperatures below 453 K. The density of silica wall surrounding surfactant assembly could be low, resulting in the structural contraction with the formation of a silica network. On the other hand, the TEOS-treated mesoporous silica film did not contract during calcination, showing high structural stability. In the TEOS treatment, TEOS molecules penetrate into an originally deposited silicate film and react with silanol groups. The densified silica wall has high structural stability and hardly contracts under a calcination process. A flat mesoporous silica film about 250 nm thick was grown from the silicon substrate. A periodic hexagonal porous structure was observed in the FE-SEM image of the cross section of the TEOS-treated film. This indicates that the channels run predominantly parallel to the surface of the silicon substrate. The developed film is a promising material such as chemical sensors, low-k films and other optoelectronic devices.
Challenges in Etching of OSG Low- K Materials for Dual-Damascene Metallization
Authors: Bliznetsov Vladimir N. , Mukherjee-Roy Moitreyee , Wing Leong Yew , Teck Ng Beng , Chuan Yew Wee 
Published: February 2017

AbstractIssues associated with trench etching in low-k OSG (organosilicate glass) films for dual damascene applications and in particular for “via-first” integration scheme were the focus of this study. As a result of designed experiment in dipole ring magnet (DRM) etcher with C4F8/N2/Ar gas mixture the trench process was established with sidewall profile 89° and flat bottom. Selectivity obtained was enough to pursue etch processes using planarizing BARC (bottom antireflective coating) for additional via bottom protection. BARC fill in vias and BARC opening time were tuned to reduce generation of polymers during etch. Effective combination of dry /wet clean recipes was developed for removal of post-RIE (reactive ion etching) residues without significant changes in OSG k-value. Optimized processes were successfully used for creating dual damascene structure complying with integration requirements for 0.13 μm design rules.
Characterization of Polysiloxane Modified Polysilsesquioxane Films for Low Dielectric Applications: Microstructure, Electrical Properties and Mechanical Properties
Authors: Hyeon-Lee Jingyu , Lyu Yi Yeol , Mah Sang Kook , Yim Jin-Hyeong , Jeong Hyun-Dam , Lee Mong Sup , Kim Sang Youl 
Published: February 2017

AbstractPoly(ε-caprolactone) (PCL) / poly(siloxane-silsesquioxane) (PSQ-PSSQ) nanohybrid films were fabricated. The dielectric constant of the film was scaled down from 2.66 to 2.28 when the 30% PCL was added into poly(siloxane-silsesquioxane) matrix. The FE-SEM micrograph of poly(ε-caprolactone) / poly(siloxane-silsesquioxane) (PSQ-PSSQ) nanohybrid film shows nanoporous structure. The modulus and hardness of the film decrease with increasing film thickness. As PCL content increases, modulus and hardness of the films decreases.
Study of Porous Silica Based Films as Low-k Dielectric Material and their Interface with Copper Metallization
Authors: Fisher Ilanit , Kaplan Wayne D. , Eizenberg Moshe , Nault Michael , Weidman Timothy 
Published: February 2017

AbstractThe success of future gigascale integrated circuits (IC) chip technology depends critically upon the reduction of the interconnects RC delay time. This calls for the development of new low dielectric constant (low-k) insulators, and for work on their integration with lower resistivity copper metallization.A porous silica based film prepared by surfactant templated self-assembly spin-on deposition (SOD) is an attractive candidate as a low-k material. In this research we have studied the structure, chemical composition and bonding of the film and its interface with copper metallization. The decomposition and vaporization of the surfactant in the last step of film deposition resulted in a film with an amorphous structure, as determined by XRD and TEM analysis. Its high porosity (35-58%) was confirmed by XRR and RBS measurements. XPS analysis of the Si2p transition indicated three types of bonding: Si-O, O-Si-C and Si-C. The bonding characteristics were also investigated by FTIR analysis. The effect of a hydrogen plasma post-treatment process on the film topography and bonding was determined by AFM and XPS, respectively. It was found that direct H2 plasma exposure significantly affected the surface roughness of the film and type of chemical bonding. The structure and properties of various PECVD deposited capping layers were also studied, as was the interface between the porous dielectric and Ta, TaxN and Cu (PVD deposited films) after annealing at 200-700°C in vacuum environment for 30 min. At temperatures up to 500°C, no significant diffusion of Cu or Ta into the porous film was detected, as determined by RBS. No copper penetration was detected up to 700°C, according to AES and SIMS analysis. However, at 700°C copper dewetting occurred when it was deposited directly on the porous silica based film.
Polarity Dependence of Degradation in Ultra Thin Oxide and JVD Nitride Gate Dielectrics
Authors: Mutha Yatin , ManjulaRani K.N. , Lal Rakesh , Rao V.Ramgopal 
Published: February 2017

AbstractWe have studied high field degradation of Jet Vapor Deposited (JVD) silicon nitride MNSFETs with DC stress fields and compared their degradation with conventional silicon dioxide MOSFETs under identical stress conditions. We have observed that in both oxide and nitride devices, the interface degradation is higher for negative gate field. Further, the relative degradation of nitrides is always lower compared to that of oxides for both positive and negative stress conditions. AC stress experiments were performed on these ultra thin oxide transistors to understand possible degradation processes. The frequency, the peak-to-peak and offset voltage of the applied AC signal are some of the parameters that have been varied. Detailed characterization results and an analysis of the degradation mechanisms are presented in this paper. We conclude that many of the degradation results can be explained using the trapped hole recombination model.
Use of Small Gate Voltage Pulses for the Extraction of the Interface Trap Densities in MOS Structures Using The Charge Pumping Technique
Authors: Lin Eugène , Moussy Eric , Bauza Daniel 
Published: February 2017

AbstractA general model for charge pumping is derived and is used for extracting interface trap densities using small gate voltage pulses. In MOS structures with ultrathin oxides, this strongly reduces the leakage current and prevents the oxide from any degradation. Interface trap densities from devices with oxides from 2.3 to 1.3 nm thick are reported for the first time.
Self-Aligned Passivated Copper Interconnects: A Novel Technique for Making Interconnections in Ultra Large Scale Integration Device Applications
Authors: Chugh Amit , Tiwari Ashutosh , Kvit A. , Narayan J 
Published: February 2017

AbstractWe have developed a technique to grow self-aligned epitaxial Cu/MgO films on Si (100) using Pulsed Laser Deposition Method. In this method we deposit a uniform film of Cu/Mg (5-7%) alloy over Si (100) at room temperature using TiN as an intermediate buffer layer. As a result of HRTEM (with spatial resolution of 0.18 nm) and STEM-Z investigations we observed that when this film is annealed at 500°C (in a controlled oxygen environment), in less than 30 minutes time, all the Mg segregates at the top and at the bottom surface of Cu. This is understood to be the consequence of lower surface energy of Mg. At 500°C Mg is quite sensitive to oxygen and thin layer of MgO is immediately formed at the top surface, we also observed a thin layer of MgO at the Cu/TiN interface. Thickness of the upper MgO layer was found to be 15 nm while that of lower layer was 10 nm. MgO underneath layer acts as a diffusion barrier and inhibits the diffusion of Cu in the system. Upper MgO layer acts as a passivating layer and improves the quality of copper against oxidation. Electrical resistivity measurements (in the temperature range 12-300 K) showed MgO/Cu/MgO/TiN/Si (100) sample to be highly conducting. We also observed that the resistivity of the system is insensitive to ambient oxygen environment. Selfaligned MgO (100) layer also provides a means to grow several interesting materials over it. This technique can be used to integrate high temperature superconductors like YBa2Cu3O7 with silicon chip.
The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors
Authors: Suh You-Seok , Heuss Greg , Lee Jae-Hoon , Misra Veena 
Published: February 2017

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.
To evaluate lower extremity ulcer cases in respect of their aetiological basis
Authors: A Gajjam Shrinivas , Amol Wagh 
Published: February 2017

Background: Lower extremity ulcer is most common in our population due to their chronicity. Lower extremities are exposed to injury and having a circulation strained by upright posture. This has reason for researchers and surgeon who have been concerned with the reasons for their common occurrence and difficulty in their cure. Researcher interested to study the lower extremity ulcer cases in respect of their aetiological basis.Methods: 100 patients of lower extremity ulcer with various types were admitted in surgical wards of Mallareddy Institute of Medical Sciences, Hyderabad during study period. The cases were examined in detail and investigated thoroughly. If there is clinically doubtful case, the diagnosis was made only after histopathological examination.Results: Most common type of ulcer was found in the present was venous 25 (25%) cases, contributed by male (21) and female (04) followed by diabetic 22 (22%) and Traumatic 18 (18%). Most of cases belongs to the age group 41-60 years (45) and male (37 cases). High saphenous vein ligation with stripping of veins (21.4%) and conservative (21.4%) treatment were common surgical procedures used for the treatment of Venous ulcer.Conclusions: In the present, Venous ulcers are the most common of all leg ulcers with high morbidity. The surgical procedures are directed at prevention of venous reflux at various levels.
A study of fine needle aspiration cytology in salivary gland lesions in a rural population
Authors: Joshi Anil R. , Jadhav Dnyaneshwar S. , Baste Balaji D. , Ranka Shweta K. 
Published: February 2017

Background: Fine needle aspiration cytology (FNAC) of suspected salivary gland lesions has an established role in preoperative diagnosis and management of patients. However diverse morphological patterns and overlapping features make it a challenging job, to give a precise diagnosis at times.Methods: This was a prospective study done from October 2011 to October 2013. Fine needle aspiration cytology was performed in 64 patients with clinically significant salivary gland lesions.Results: Fine needle aspiration cytology categorized 38 (59.4%) of the salivary gland lesions as neoplastic and 26 (40.6 %) as non- neoplastic lesions. Amongst the neoplastic lesions, 86.9% were benign and 13.2% were malignant cases.Conclusions: FNAC of the salivary gland is simple, cheap, safe and reliable technique in the primary diagnosis of salivary gland lesions.
Study of serum magnesium level in patients with type 2 diabetes mellitus and it’s correlation with glycosylated hemoglobin and diabetic complications
Authors: Wahid Abdul , Verma Girish C. , Meena C. P. , Pathan A. R. 
Published: February 2017

Background: Hypomagnesemia has been proposed as a novel factor implicated in the pathogenesis of poor glycemic control and diabetic complications. Aim of the present study is to study serum magnesium level in patients with type 2 DM and to find the correlation between serum magnesium levels, HbA1c and diabetic complications.Methods: 100 patients with Type 2 DM (50 males and 50 females) who were diagnosed on the basis of ADA criteria or taking treatment for Diabetes were included in the study. All patients underwent tests for serum magnesium level, fasting blood sugar, postprandial blood sugar, HbA1c and also target organ evaluation for Diabetes. A detailed history and examination was also done.Results: There was significant difference in the prevalence of hypomagnesemia (34% vs 6%) and serum magnesium levels (1.59±0.187 versus 1.78±0.126, p <0.0001) between diabetics and control group. FBS (172.17±30.55 versus 137.06±37.76, p<0.0001), PPBS (243±61.21 versus 195.84±59.1, p = 0.0003) and HbA1C (8.42±1.292 versus 7.04±0.956, p<0.0001) were significantly higher in hypomagnesemic diabetics as compared to normomagnesemic diabetics. Significant proportion of hypomagnesemic diabetics were suffering from retinopathy as compared to normomagnesemic diabetics (47.06% versus 19.70%, p = 0.0042). Diabetic nephropathy, neuropathy, hypertension and IHD were also higher in hypomagnesemic diabetics as compared to normomagnesemic diabetics, but insignificant.Conclusions: Prevalence of hypomagnesemia in Type 2 diabetics was 34%. Diabetics with hypomagnesemia had poor glycemic control. Hypomagnesemia was significantly associated with diabetic retinopathy.
Malaria and anaemia in pregnant and non-pregnant women of child-bearing age: a cross-sectional study
Authors: Romday Rakesh , Gupta Ajay Kumar , Chilloria Pawan , Sharma Satendra , Bhambani Pawan 
Published: February 2017

Background: Malaria infection during pregnancy is a major public health problem globally. Anaemia is often an adverse outcome of severe parasitic infections during pregnancy in developing countries. Pregnant are more susceptible to Plasmodium falciparum infections than non-pregnant women of child-bearing age. The objective of this study was to comparatively investigate malaria and anaemia in pregnant and non- pregnant women of child-bearing age.Methods: A cross-sectional comparative study, in which 380 pregnant women and 380 non-pregnant women were screened for the study. The study was conducted at the Index Medical College Hospital and Research Centre, Indore, Madhya Pradesh, India. Participants’ demographic data were collected via the administration of questionnaires. In addition, their blood samples were analysed for haemoglobin level and Malaria parasites, while stool samples from the pregnant women were examined for intestinal parasites.Results: The study revealed that pregnant women have higher malaria parasitaemia (12.6%) and anaemia (62.6%). The species of Plasmodium isolated from the pregnant women were P. falciparum (85.4%), P. malariae (4.2%) and P. ovale (10.4%). Malaria parasitaemia was higher in the primigravidae (14%). However multi-gravidae recorded the highest anaemia prevalence (67.1%). Age of pregnant women was a factor affecting malaria parasitaemia with a significant P-value and (P value = 0.0041).Conclusions: Pregnant women were more susceptible to malaria and anaemia than non-pregnant women of child-bearing age. Most of the pregnant women reported at antenatal clinic during the second trimester. Primigravidae however recorded the highest malaria parasitaemia. The main species of Plasmodium observed in the blood samples was falciparum.
The Effect of Stocking Density on Nitrification Rate in a Closed Recirculating Culture System
Authors: Sidik A.S. , Sarwono , , Agustina , 
Published: February 2017

<p>ABSTRACT</p><p>Nitrification rate in a closed recirculating water system with different stocking density of common carp (Cyprinus carpio L.) had been observed in the Laboratory of Aquaculture, Faculty of Fisheries and Marine Science, Mulawarman University. Fish were cultivated in rounded tanks with four level of stocking densities i.e. 10, 20, 30 and 40 fish/100 l in a closed recirculting water system, and fed on a commercial pellet given thrice a day at a quantity of 5% from the total body weight of fish per day. The experiment was designed completely randomized with three replications. Nitrification rate was calculated stoichiometrically through the determination of ammonia and nitrite oxidation rate. Results showed that in this experiment the ammonia and nitrite oxidation rate, and nitrification rate in a closed recirculating water system was increased with the increasing stocking density of fish. On the contrary, the growth of fish was decreased with the increasing of stocking density.</p><p>Key words : Nitrification rate, stocking density, recirculation system, common carp (Cyprinus carpio L.).</p><p> </p><p>ABSTRAK</p><p>Laju nitrifikasi dalam budidaya sistem resirkulasi air tertutup dengan padat penebaran ikan mas (Cyprinus carpio L.) yang berbeda telah diamati di Laboratorium Budidaya Perairan, Fakultas Perikanan dan Ilmu Kelautan Universitas Mulawarman. Ikan dipelihara dalam tong plastik dengan empat tingkat padat penebaran, yaitu 10, 20, 30 dan 40 ekor/100 l, dan diberi makan pelet komersial tiga kali sehari dengan jumlah 5 % dari berat badan ikan per hari. Penelitian ini dirancang secara acak lengkap dengan tiga ulangan. Laju nitrifikasi dihitung secara stoikiometrik melalui penentuan laju oksidasi amoniak dan nitrit. Hasil penelitian menunjukkan bahwa laju oksidasi amoniak dan nitrit serta laju nitrifikasi dalam sistem resirkulasi air tertutup meningkat dengan meningkatnya padat penebaran. Sebaliknya pertumbuhan ikan menurun dengan meningkatnya padat penebaran.</p><p>Kata kunci : Laju nitrifikasi, padat penebaran, sistem resirkulasi, ikan mas (Cyprinus carpio L.).</p>