bluuebunny/crossref_metadata_2025_split huggingface dataset:
Ketogenic diet: Predictors of seizure control
Authors: Agarwal Nitin , Arkilo Dimitrios , Farooq Osman , Gillogly Cynthia , Kavak Katelyn S , Weinstock Arie 
Published: June 2017

Background: The ketogenic diet is an effective non-pharmacologic treatment for medically resistant epilepsy. The aim of this study was to identify any predictors that may influence the response of ketogenic diet. Methods: A retrospective chart review for all patients with medically resistant epilepsy was performed at a tertiary care epilepsy center from 1996 to 2012. Patient- and diet-related variables were evaluated with respect to seizure reduction at 1, 3, 6, 9 and 12-month intervals and divided into four possible outcome classes. Results: Sixty-three patients met inclusion. Thirty-seven (59%) reported >50% seizure reduction at 3 months with 44% and 37% patients benefiting at 6-month and 12-month follow up, respectively. A trend toward significant seizure improvement was noted in 48% patients with seizure onset >1 year at 12-month (p = 0.09) interval and in 62% patients with >10 seizure/day at 6-month interval (p = 0.054). An ordinal logistic regression showed later age of seizure to have higher odds of favorable response at 1-month (p = 0.005) and 3-month (p = 0.013) follow up. Patients with non-fasting diet induction were more likely to have a favorable outcome at 6 months (p = 0.008) as do females (p = 0.037) and those treated with higher fat ratio diet (p = 0.034). Conclusion: Our study reports the effectiveness of ketogenic diet in children with medically resistant epilepsy. Later age of seizure onset, female gender, higher ketogenic diet ratio and non-fasting induction were associated with better odds of improved seizure outcome. A larger cohort is required to confirm these findings.
Matrix-Assisted Autologous Chondrocyte Transplantation in the Knee: A Systematic Review of Mid- to Long-Term Clinical Outcomes
Authors: Schuette Hayden B. , Kraeutler Matthew J. , McCarty Eric C. 
Published: June 2017

Background: Matrix-assisted autologous chondrocyte transplantation (MACT) is a surgical treatment option for articular cartilage lesions of the knee joint. Purpose: To investigate mid- to long-term clinical outcomes of MACT in the patellofemoral (PF) and tibiofemoral (TF) joints. Study Design: Systematic review; Level of evidence, 4. Methods: A systematic review was performed by searching PubMed, Embase, and the Cochrane Library to find studies evaluating minimum 5-year clinical outcomes of patients undergoing MACT in the knee joint. Search terms used were knee, matrix, and autologous chondrocyte. Patients were evaluated based on treatment failure rates, magnetic resonance imaging, and subjective outcome scores. Study methodology was assessed using the Modified Coleman Methodology Score (MCMS). Results: Ten studies (two level 1, one level 2, one level 3, and six level 4 evidence) were identified that met inclusion and exclusion criteria, for a total of 442 TF patients and 136 PF patients. Treatment failure occurred in 9.7% of all patients, including 4.7% of PF patients and 12.4% of TF patients ( P = .037). Weighted averages of subjective outcome scores, including Knee injury and Osteoarthritis Outcome Score, Short Form–36 Health Survey, and Tegner scores, improved from baseline to latest follow-up in both TF and PF patients. The mean MCMS was found to be 57.4, with a standard deviation of 18.5. Conclusion: Patients undergoing MACT in the knee show favorable mid- to long-term clinical outcomes. A significantly higher treatment failure rate was found in patients undergoing MACT in the TF joint compared with the PF joint.
What do we (do not) know about the use of cone beam computed tomography in endodontics? A thematic series with a call for scientific evidence
Authors: Kamburoğlu Kıvanç , Tsesis Igor , Rosen Eyal 
Published: June 2017

Abstract
Cone beam computed tomography (CBCT) has become a common diagnostic method in endodontics. However, the current literature provides insufficient information about different aspects that are related to the use of CBCT, such as: the efficacy of CBCT to support the practitioner’s clinical decision making and to affect treatment outcomes; about the required training of the practitioner so he can efficiently examine the entire region that appears in the CBCT scan and diagnose abnormalities or possible pathologies; and on the long-term health risks associated with the use of CBCT in endodontics. In addition, CBCT has the strong potential to be used for accurate diagnosis of complete and uneventful healing. In this thematic series, we call for manuscripts that discuss aspects of the use of CBCT in endodontics.
A multi-tool recipe to identify regions of protein-DNA binding and their influence on associated gene expression
Authors: Carlin Daniel E. , Kosnicki Kassi , Garamszegi Sara , Ideker Trey , Thorvaldsdóttir Helga , Reich Michael , Mesirov Jill P. 
Published: June 2017

One commonly performed bioinformatics task is to infer functional regulation of transcription factors by observing differential expression under a knockout, and integrating DNA binding information of that transcription factor. However, until now, this this task has required dedicated bioinformatics support to perform the necessary data integration. GenomeSpace provides a protocol, or “recipe”, and a user interface with inter-operating software tools to identifying protein occupancies along the genome from a ChIP-seq experiment and associated differentially regulated genes from an RNA-Seq experiment. By integrating RNA-Seq and ChIP-seq analyses, a user is easily able to associate differing expression phenotypes with changing epigenetic landscapes.
The effect of imatinib therapy on tumour cycling hypoxia, tissue oxygenation and vascular reactivity
Authors: Gonçalves Miguel R. , Johnson Sean Peter , Ramasawmy Rajiv , Lythgoe Mark F. , Pedley R. Barbara , Walker-Samuel Simon 
Published: June 2017

Background: Several biomedical imaging techniques have recently been developed to probe hypoxia in tumours, including oxygen-enhanced (OE) and blood oxygen level-dependent (BOLD) magnetic resonance imaging (MRI). These techniques have strong potential for measuring both chronic and transient (cycling) changes in hypoxia, and to assess response to vascular-targeting therapies in the clinic. Methods: In this study, we investigated the use of BOLD and OE-MRI to assess changes in cycling hypoxia, tissue oxygenation and vascular reactivity to hyperoxic gas challenges, in mouse models of colorectal therapy, following treatment with the PDGF-receptor inhibitor, imatinib mesylate (Glivec). Results: Whilst no changes were observed in imaging biomarkers of cycling hypoxia (from BOLD) or chronic hypoxia (from OE-MRI), the BOLD response to carbogen-breathing became significantly more positive in some tumour regions and more negative in other regions, thereby increasing overall heterogeneity. Conclusions: Imatinib did not affect the magnitude of cycling hypoxia or OE-MRI signal, but increased the heterogeneity of the spatial distribution of BOLD MRI changes in response to gas challenges.
Governance Practices in Platform Ecosystems: Navigating Tensions Between Cocreated Value and Governance Costs
Authors: Huber Thomas L. , Kude Thomas , Dibbern Jens 
Published: June 2017

Based on an exploratory multiple-case study in two platform ecosystems, we develop a process theory that explains how and why different ways of practicing ecosystem-wide governance are more or less successful in navigating the tension between cocreated value and governance costs. Our process theory shows that how ecosystem-wide rules and values are practiced considerably varies and changes over time. Initially, governance practices follow ecosystem-wide rules; if and how practices shift toward going beyond the rules hinges on specific necessary conditions. Irrespective of which governance route is taken, the tension between cocreated value and governance costs is more successfully addressed if practices are sensitive to ecosystem-wide values. The online appendix is available at https://doi.org/10.1287/isre.2017.0701 .
Finite Genus Solutions to the Generalised Kaup-Newell Hierarchy and Two 2+1 Dimensional Modified Korteweg-de Vries Equations
Authors: Yang Xiao , Han Jiayan 
Published: June 2017

Abstract
A generalised Kaup-Newell (gKN) hierarchy is introduced, which starts with a system of first-order ordinary differential equations and includes the Gerdjikov-Ivanov equation. By introducing an appropriate generating function, its related Hamiltonian systems and algebraic curve are given. The Hamiltonian systems are proved to be integrable, then the gKN hierarchy is solved by Hamiltonian flows. The algebraic curve is provided with suitable genus, then based on the trace formula and Riemann-Jacobi inversion theorem, finite genus solutions of the gKN hierarchy are obtained. Besides, two 2+1 dimensional modified Korteweg-de Vries (mKdV) equations are also solved.
GABA-B Controls Persistent Na+Current and Coupled Na+-Activated K+Current
Authors: Li Ping , Stewart Richard , Butler Alice , Gonzalez-Cota Ana Laura , Harmon Steve , Salkoff Lawrence 
Published: June 2017

AbstractThe GABA-B receptor is densely expressed throughout the brain and has been implicated in many CNS functions and disorders, including addiction, epilepsy, spasticity, schizophrenia, anxiety, cognitive deficits, and depression, as well as various aspects of nervous system development. How one GABA-B receptor is involved in so many aspects of CNS function remains unanswered. Activation of GABA-B receptors is normally thought to produce inhibitory responses in the nervous system, but puzzling contradictory responses exist. Here we report that in rat mitral cells of the olfactory bulb, GABA-B receptor activation inhibits both the persistent sodium current (INaP) and the sodium-activated potassium current (IKNa), which is coupled to it. We find that the primary effect of GABA-B activation is to inhibit INaP, which has the secondary effect of inhibiting IKNabecause of its dependence on persistent sodium entry for activation. This can have either a net excitatory or inhibitory effect depending on the balance of INaP/IKNacurrents in neurons. In the olfactory bulb, the cell bodies of mitral cells are densely packed with sodium-activated potassium channels. These channels produce a large IKNawhich, if constitutively active, would shunt any synaptic potentials traversing the soma before reaching the spike initiation zone. However, GABA-B receptor activation might have the net effect of reducing the IKNablocking effect, thus enhancing the effectiveness of synaptic potentials.
The Amyloid Precursor Protein Is a Conserved Receptor for Slit to Mediate Axon Guidance
Authors: Wang Baiping , Li Hongmei , Mutlu Sena A. , Bowser Devon A. , Moore Michael J. , Wang Meng C. , Zheng Hui 
Published: June 2017

AbstractThe amyloid precursor protein (APP) is a receptor-like membrane protein. Although APP processing and β-amyloid production play a central role in Alzheimer’s disease (AD) pathogenesis, the physiological function of APP remains elusive. Here, we identify APP as a novel receptor for Slit that mediates axon guidance and neural circuit formation. APP deficiency abolishes the Slit repulsive effect in a 3D olfactory explant culture, consistent with its callosal projection deficit in vivo and reminiscent of Slit loss. Inactivation of APP ortholog APL-1 inCaenorhabditiselegans results in pioneer axon mistargeting and genetic analysis places APL-1 in the SLT-1 (Slit)/SAX-3 (Robo) repulsive pathway. Slit binds to APP through the E1 domain, which triggers APP ectodomain shedding and recruitment of the intracellular FE65 and Pak1 complex and associated Rac1 GTPase activation. Our study establishes APP as a novel receptor for Slit ligand mediating axon guidance and neural circuit formation.
Evolution of SOI MOSFETs: from Single Gate to Multiple Gates
Authors: Colinge Jean-Pierre 
Published: June 2017

AbstractTo improve short-channel characteristics and increase current drive, SOI technology is shifting focus from “classical” single-gate MOSFET architectures to multiple-gate device structures. This paper traces the history of single- and multiple-gate SOI MOSFETs and summarizes the electrical characteristics of such devices.
Scalability of MOCVD-deposited Hafnium Oxide
Authors: Elshocht S. Van , Carter R. , Caymax M. , Claes M. , Conard T. , Daté L. , Gendt S. De , Kaushik V. , Kerber A. , Kluth J. , Lujan G. , Pétry J. , Pique D. , Richard O. , Rohr E. , Shimamoto Y. , Tsai W. , Heyns M.M. 
Published: June 2017

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.
A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide
Authors: Hori Mitsuaki , Tamura Naoyoshi , Kase Masataka , Sakuma Hiroko , Ohota Hiroyuki , Shigeno Mayumi , Kataoka Yuuzi 
Published: June 2017

AbstractWe propose a new parameter predicating transconductance (Gm) of the gate dielectric of nitrided SiO2 with the physical thickness below 1.1 nm for high-performance transistors. The 6 different type of nitrided SiO2 are formed using the plasma nitridation or nitric oxide (NO) gas annealing in conditions to adjust a optical thickness ranging 0.96 to 1.19 nm. The material property of nitrided SiO2 are analyzed by secondary ions mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS). The MOSFET are fabricated using these gate dielectric and 90 nm generation CMOS technology. Then we find a good correlation between the maximum of Gm and the percentage of amount of N(SiN3)3 substructure at the total amount of NSi3 structure measured by XPS, rather than the total dose of nitrogen measured by SIMS.
LS-MOCVD of BSTO Thin Films Using Novel Ba and Sr Precursors
Authors: Kwon Hyun Goo , Oh Youngwoo , Park Jung Woo , Lee Young Kuk , Kim Chang Gyoun , Kim Yunsoo 
Published: June 2017

AbstractWe report the synthesis of new precursors Ba(thd)2(tmeea) and Sr(thd)2(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amine, and the LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Thin films of BSTO were grown on Pt(111)/SiO2/Si(100) substrates by LS-MOCVD using the cocktail source consisting of the conventional Ti precursor Ti(thd)2(OiPr)2 and the new Ba and Sr precursors. As-grown films were characterized by SEM, XRD, XRF, and C-V measurement. BSTO films grown at 420°C were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as large as 320. The dependence of composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, and working pressure will be discussed.
Kinetics Of Charge Generation During Formation Of Hf And Zr Silicate Dielectrics
Authors: Gougousi Theodosia , Kelly M. Jason , Parsons Gregory N. 
Published: June 2017

AbstractUnderstanding charged defects in high dielectric constant insulators is a critical challenge for advanced devices. We have formed thin Zr and Hf silicates by oxidation of thin metal films sputtered on clean Si(100) and studied the effect of oxidation time (15 to 300s) and temperature (600 or 900°C) on the flatband voltage using capacitance vs. voltage measurements. We find that the thermal budget during oxidation and the type of oxidizing agent (slow vs. fast) affect the amount of fixed charge in the film significantly. Oxidation of 0.8nm of Zr metal on Si at 600°C in N2O for 15s results in EOT=1.2nm and a shift in the flatband voltage by ∼-0.2V indicating generation of positive fixed charge. Oxidation of similar films for 300s result in EOT=2.8nm and shift of the flatband voltage by ∼-0.95V. Hf films oxidized in N2O also show increased concentrations of fixed charge for longer oxidation times. By comparison, Si oxidized in the same environment does not show this extent of flatband voltage shift. A significantly reduced charge generation rate is observed for Hf oxidation under low O2 partial pressure. Extended oxidations (up to 1h) result in increased EOT and a slight decrease in the charged defect state density. Forming Gas Anneal (FGA) results in partial neutralization of the charge. FGA after the Al gate deposition also leads to significant decrease of the EOT (from 2.7 to 2.1nm) indicating significant reaction of the film with the gate metal. X-ray photoelectron spectroscopy for thin films indicates formation of Zr and Hf-silicates. However, for thick Hf films the low O2 oxidation process results in less silicon incorporation in the film as compared to films oxidized in N2O. Results suggest that understanding oxidation mechanisms will be important in isolating andcontrollingfixedchargeinhigh-kdielectrics.
Free Standing Silicon as a Compliant Substrate for SiGe
Authors: Cohen G. M. , Mooney P. M. , Chu J.O. 
Published: June 2017

AbstractWe show that SiGe grown on free-standing silicon is elastically relaxed. The free-standing Si structure consists of a ∼30 nm-thick, 5 μm-square silicon slab supported by a SiO2 pedestal at a single contact point at the center of the square (the cross-section resembles a mushroom). A matrix of free-standing structures was made by patterning a bonded silicon-on-insulator (SOI) wafer and undercutting the SiO2 to form the pedestal. Un-patterned areas of the SOI wafer and the exposed bulk Si substrate were included as reference regions. A UHVCVD Si0.8Ge0.2 film, about 200 nm-thick, was grown epitaxially on both sides of the free-standing silicon and the surrounding exposed bulk Si. The SiGe was also grown on the un-patterned SOI and bulk substrate control areas. The SiGe film grown on both SOI and bulk silicon was found to be fully strained. In contrast, the SiGe layer grown on free-standing silicon is ∼89% strain-relaxed, and the free-standing silicon film was measured to be under tensile strain. Since the same lattice mismatch was found between the SiGe layer and the Si on the free-standing silicon and on the SOI and bulk Si control regions, we conclude that the strain relaxation of the SiGe film on free-standing Si is elastic with the strain accommodated entirely by the free-standing silicon film under tensile strain. This was further confirmed by AFM measurements. The SiGe film on the control regions showed a very smooth SiGe surface with only a few surface steps originating from misfit dislocations at the SiGe/Si interface. No surface steps from misfit dislocations were observed on the surface of the SiGe film on free-standing Si. These results show that free-standing silicon serves as an ideal compliant substrate for SiGe.
Short-period (Si14 / Si0.75 Ge0.25)20 Superlattices for the Growth of High-quality Si0.75 Ge0.25
Authors: Rahman M.M. , Tambo T. , Tatsuyama C. 
Published: June 2017

AbstractIn the present experiment, we have grown 2500-Å thick Si0.75Ge0.25 alloy layers on Si(001) substrate by MBE process using a short-period (Si14/Si0.75Ge0.25)20 superlattice (SL) as buffer layers. In the SL layers, first a layer of 14 monolayers (MLs) of Si (thickness about 20Å) then a thin layer of Si0.75Ge0.25 (thickness 5-6Å) were grown. This Si/(Si0.75Ge0.25) bilayers were repeated for 20 times. The buffer layers were grown at different temperatures from 300-400°C and the alloy layers were then grown at 500°C on the buffer layers. The alloy layer showed low residual strain (about -0.16%) and smooth surface (rms roughness ~15Å) with 300°C grown SL buffer. Low temperature growth of Si in SL layer introduces point defects and low temperature growth of Si1-xGex in SL layer reduces the Ge segregation length, which leads to strained SL layer formation. Strained layers are capable to make barrier for the propagation of threading dislocations and point defect sites can trap the dislocations.
Low Schottky Barrier on N-Type Si for N-Channel Schottky Source/Drain MOSFETs
Authors: Tao Meng , Udeshi Darshak , Agarwal Shruddha , Basit Nasir , Maldonado Eduardo , Kirk Wiley P. 
Published: June 2017

AbstractSchottky source/drain (S/D) in Si-CMOS provide an alternative to current approaches in S/D, channel, and gate-stack engineering. The Schottky S/D PMOS has been demonstrated at a number of university and industrial laboratories. The bottleneck for the Schottky S/D NMOS is the fact that none of the common metals or metal silicides has a low enough barrier height (~0.2 eV) on n-type Si. A method to produce low Schottky barriers on n-type Si with common metals including aluminum (Al) and chromium (Cr) is reported in this paper. The interface between metal and Si(100) is engineered at the atomic scale with a monolayer of selenium (Se) to reduce the density of interface states, and the engineered interface shows inertness to chemical and electronic processes at the interface. One consequence of this electronic inertness is that the Schottky barrier is now more dependent on the metal work function. Al and Cr both have work functions very close to the Si electron affinity. It is found that the Schottky barrier of Al on Se-engineered n-type Si(100) is 0.08 eV, and that of Cr is 0.26 eV. These numbers agree well with the ideal Schottky barrier heights for Al and Cr on n-type Si(100), but are significantly different from the barrier heights known for four decades for these metals on n-type Si(100). These results bring new hope for the Schottky S/D NMOS with a metal commonly used in the Si industry.