bluuebunny/crossref_metadata_2025_split huggingface dataset:
Si(100) Surface Cleaning Using Sr and SrO
Authors: Wei Yi , Hu Xiaoming , Liang Yong , Jordan D.C. , Craigo Brad , Droopad Ravi , Yu Z. , Demkov Alex , Edwards John L. , Moore Karen , Ooms William J. 
Published: February 2017

AbstractA method for removing SiO2 and producing an ordered Si(100) surface using Sr or SrO has been developed. In this technique, a few monolayers of Sr or SrO are deposited onto the as received Si(100) wafer in a ultrahigh vacuum molecular beam epitaxy system. The substrate is then heated to ∼800°C for about 5 minutes, the SiO2 is removed to leave behind a Sr terminated Si(100) surface. This Sr terminated Si(100) surface is well suited for the growth of crystalline high k dielectric SrTiO3 films. Temperature programmed desorption measurements were carried out to understand the mechanism of removing SiO2 from Si(100) using Sr or SrO. The species we observed coming off the surface during the temperature cycle was mainly SiO and O, no significant amount of Sr containing species was observed. We conclude that the SiO2 removal is due to the catalyst reaction SiO2 + Sr (or SrO) → SiO (g) + O + Sr (or SrO). The reaction happened through several intermediate steps. The reaction SiO2 + Si → 2SiO (g) at the SiO2/Si interface is limited and the pit formation is suppressed. The main roles that Sr or SrO play during the oxide removal process are catalysts promoting SiO formation and preventing further etching and the formation of pits in the substrate.
On the Argon Annealing-Based Improvements of the Properties of Ultra-Thin Oxynitrides Nitrided with NH3
Authors: Dasgupta Anindya , Takoudis Christos G. , Martel Greg 
Published: February 2017

AbstractThermally grown Si3N4 films in NH3 are known to have a higher dielectric constant and a higher N concentration than silicon oxynitrides, although they incorporate hydrogen atoms that induce hot electron carriers during subsequent high temperature processing. Further, a silicon nitride is difficult to grow over about 6 nm thick, due to self-limiting growth. One alternative is SiOxNy post-nitrided with NH3.In this work, we study the scope of improvement of Ar annealed nitrided oxynitrides as a function of annealing temperature and duration. Secondary ion mass spectroscopy (SIMS) studies of the nitrogen and hydrogen profiles suggest increasing N and H removal with increasing annealing time and temperature. Electrical characterizations have been performed to determine the total charge (Qox) and interface trap (Dit) densities at different processing conditions, before and after the annealing step. Post-annealing steps are not found to yield improvements of the electrical properties of these dielectric films. Instead, sometimes Qox is even seen to increase (e.g., after a 30 min Ar anneal at 1000 °C). Therefore, an optimization of such annealing steps is essential in designing nanodielectrics with desired nitrogen amounts and N concentration profiles as well as in understanding related process-structure-function relationships.
Characteristics of Silicon Implanted Trap Memory in Oxide-Nitride-Oxide Structure
Authors: Kalkur T.S. , Peachey Nathaniel , III Tom Moss 
Published: February 2017

AbstractIn this work, non-volatile memory based on silicon nano trap was implemented by implanting silicon into oxide-nitride-oxide layers(ONO) on silicon. The charge storage effects in these memory structures were measured using capacitance-voltage techniques in polysilicon-ONO- silicon structures in terms of silicon implantation dose. Without silicon implantation, the devices did not the threshold shift (memory window). The memory window was found to be dependent on silicon implantation dose and DC bias (programming) voltage. The memory window did show any degradation by annealing in nitrogen or forming gas environment at 450 °C for 30 minutes. Nano trap memory elements were fabricated with 0.35 micron technology showed encouraging results up to 1e5 program/erase cylces.
Evolution of Sputtered HfO2 Thin Films Upon Annealing
Authors: Nam S. , Nam S.W. , Yoo J.H. , Ko D.H. 
Published: February 2017

AbstractWe investigated the evolution of the physical and electrical properties of HfO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing. The HfO2 thin films deposited at room temperature were amorphous, while the films after annealing were poly crystalline. The crystallization temperature of the HfO2 thin films was dependent on the annealing methods (RTP or Furnace) and ambient (nitrogen or oxygen). The microstructures of HfO2 thin gate oxides of Tox <15A thick were analyzed by HRTEM, XPS and XRD. We also focused on the interfacial layer between HfO2 thin films and silicon substrates. Due to its high oxygen diffusivity, any annealing led to oxygen diffusion rapidly through the HfO2 films. The EOT increased upon annealing due to the increased SiO2-containing layer. The HfO2 thin films deposited at room temperature have the undesirable interfacial states due to the surface damage by sputtering. We found that the HfO2 thin films <15A thick were optimized by RTP or furnace annealing.
Comparison of Mocvd Precursors for Hf1-xSixO2 Gate Dielectric Deposition
Authors: Hendrix B.C. , Borovik A.S. , Wang Z. , Xu C. , Roeder J.F. , Baum T. H. , Bevan M.J. , Visokay M.R. , Chambers J.J. , Rotondaro A.L.P. , Bu H. , Colombo L. 
Published: February 2017

AbstractThis study investigates and compares the deposition of Hf1-xSixO2 films from two suites of metalorganic CVD precursors. The first precursor suite has oxygen coordinated to the Si or Hf center and includes β-diketonate, alcoxide and acetoxy ligands. The second precursor suite has alkylamido ligands, which have nitrogen coordinated to the Hf or Si center. The process space for deposition of silicates was evaluated for controlling the composition of the silicate films while optimizing deposition rates for a manufacturable single-wafer process. The composition of the film, x, is controlled over the entire range by changing the composition of the precursor solution, Si:Si+Hf. The composition of the films, including hafnium, silicon, oxygen, carbon, and nitrogen content were measured by XPS. Both suites of precursors provide routes by which composition can be controlled in fully oxidized films with low carbon and nitrogen content. Film deposition rates are consistent with manufacturing requirements. The interfacial layers that were observed by HRTEM between the film and the substrate were thin (< 10Å) and possibly graded in composition.
Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation
Authors: Nandini Alok , Roy U. , Mallikarjunan A. , Kumar A. , Fortin J. , Shekhawat G.S. , Geer Robert , Dovidenko Katherine , Lifshin Eric , Bakhru H. , Lu T.M. 
Published: February 2017

AbstractThin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.
Device Scaling Effects on Substrate Enhanced Degradation in MOS Transistors
Authors: Mohapatra Nihar Ranjan , Mahapatra Souvik , Rao V. Ramgopal 
Published: February 2017

AbstractThis paper analyzes in detail the substrate enhanced gate current injection mechanism and the resulting hot-carrier degradation in n-channel MOS transistors and compares the results with conventional channel hot carrier injection mechanism. The degradation mechanism is studied for different values of substrate voltage over a wide range of channel length and oxide thickness. Stress and charge pumping measurements are carried out to study the degradation under identical bias (gate, drain, substrate) and gate current condition. The influence of device dimensions on the gate injection efficiency and hot carrier degradation is also studied. Results show that the degradation under negative substrate voltage operation is strongly dependent on the transverse electric field and spread of the interface trap profile. The possible mechanism responsible for such trends is discussed. It is also found that, under identical gate current (programming time in flash memory cells), the degradation is less for higher negative substrate bias, which is helpful in realizing fast and reliable flash memories.
Synthesis and Characterization of Methyltriethoxysilane Based Low Permittivity (Low-k) Polymeric Dielectrics
Authors: Gu Z. , Jeyakumar R. , Sivoththaman S. , Nathan A. 
Published: February 2017

AbstractA low-permittivity (low-k) polymeric material has been synthesized using methyltriethoxysilane as base material. The films were reproduceably deposited, by spin-coating on Si wafers with a uniform thickness in the range of 0.3-0.5μm depending on speed. The parameters for spin coating (spin speed and spin time etc.,) have been optimized. The effects of various curing conditions on the structural and dielectric properties have been studied. Fourier Transform Infrared Spectroscopy (FTIR) shows prominent peaks of Si-CH3 stretch and Si-O stretch modes. Test structures on silicon were fabricated to measure the dielectric constant (k) of the material. The values of k were found to be in the range of 2.6-1.2 for annealing temperatures 150°C-450°C. The dielectric constant decreases as the curing temperature increases.
Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees
Authors: Gan C. L. , Thompson C. V. , Pey K. L. , Choi W. K. , Wei F. , Yu B. , Hau-Riege S. P. 
Published: February 2017

AbstractElectromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.
The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
Authors: Kim H. , Cabral C. , Lavoie C. , Rossnagel S.M. 
Published: February 2017

AbstractTa films were grown by plasma-enhanced atomic layer deposition (PE-ALD) at temperatures from room temperature up to 300 °C using TaCl5 as source gas and RF plasma-produced atomic H as the reducing agent. Post-deposition ex situ chemical analyses showed that the main impurity is oxygen, incorporated during the air exposure prior to analysis with typically low Cl concentration below 1 at %. The X-ray diffraction indicates that ALD Ta films are amorphous or composed of nano-grains. The typical resistivity of ALD Ta films was 150-180 μΩ cm, which corresponds to that of β-Ta phase, at a wide range of growth parameters. The conformality of the film is 100 % up to an aspect ratio of 15:1 and 40 % for aspect ratio of 40:1. The thickness per cycle, corresponding to the growth rate, was measured by Rutherford back scattering as a function of various key growth parameters, including TaCl5 and H exposure time and growth temperature. The maximum thickness per cycle values were below 0.1 ML, probably due to the steric hindrance for TaCl5 adsorption. Bilayer structures consisting of Cu films deposited by sputtering and ALD Ta films with various thicknesses were prepared and the diffusion barrier properties of ALD Ta films were investigated by various analysis techniques consisting of X-ray diffraction, elastic light scattering, and resistance analysis. The results were compared with Ta thin films deposited by sputtering with comparable thicknesses. Also, the growth of TaN films by PE-ALD using consecutive exposures of atomic H and activated N2 is presented.
Surplus and Indicator
Authors: Vann Katie 
Published: February 2017

This essay offers a perspective on journal impact factor (JIF) centrism in academic evaluation from the vantage point of academic publishing in an increasingly data-driven scholarly environment. The political implications and orientations to the JIF are thought through with respect both to commercial publishing industry consolidation and to the reliance of public-sector scholarly communities on (oligopolistic) commercial academic publishing houses. The author proposes that centrism to the JIF as a legitimizing indicator and incentivizing norm leads to two diametrically opposed forms of “surplus”: for academic communities, surplus emerges in the form of layers of scholarly knowledge effects/impact and labor, which, because they remain foreclosed to formal professional recognition, are inadvertently reconstructed as dispensable (waste); for private sector publishing companies––whose contribution to the publishing process consists foremost in providing scalable content management/distribution platforms and in transforming unique manuscript content into standardized digital objects that are amenable to indexing, aggregation, and comparative calculation––surplus emerges in the form of monetary surplus (profit). The essay describes the inner workings of these phenomena.
STUDY OF RADON AND THORON CONCENTRATION IN ENVIRONMENT OF MORADABAD DISTRICT OF UTTAR PRADESH, INDIA
Authors: Singh Indu , Kumar Anil , Rawat R B S 
Published: February 2017

Purpose: A study of indoor radon and thoron has been carried out in the dwelling of Moradabad, Uttar Pradesh, India. Radon is an invisible radioactive gas that occurs naturally in the indoor atmosphere. It comes from the natural breakdown of uranium in soils and rocks. Lung cancer risk depends upon the concentration of radon, thoron and their decay product in the air.
Methodology: The measurements of radon and thoron concentration were carried out by using LR-115 type II plastic track detectors (SSNTD Technique).
Findings: In the present study the value of radon concentration from10.5 Bq/m3to 30Bq/m3 with an average19.9Bq/m3and thoron concentration from 5.6 Bq/m3 to 24 Bq/m3 with an average of 14.9 Bq/m3. It is observed that radon and thoron concentration is maximum in winter and minimum during summer. The maximum concentration in winter is essentially influenced by the intense temperature inversion, which occurs in the winter season when the wind velocity is low.
The maximum concentration in winter is also the result of decreased ventilation because in this season the houses are closed for a long time and radon/thoron accumulated inside the room and a weak positive correlation was observed between radon and thoron.
Social Implications: There are some difficulties in assessing the exact risks of radon in the home. Most studies have used data from miners who will have had far more exposure to radon than is likely in any building.
Originality/ Novelty: This study is done at Moradabad City and Research Lab present in S.S.P. G. College Shajhanapur. Data of radon and thoron concentration has been taken from twin cup radon-thoron Dosimeter and Spark Counter.
AU(III) AND CU(II) CATALYST FOR OXIDATION OF AROMATIC AND CYCLIC HYDROCARBON BY CERIUM (IV) IN ACIDIC MEDIUM UNDER MICROWAVE IRRADIATION
Authors: Srivastava Manish , Goyal Ashu , Srivastava Anamika , Mishra Aakanksha , Tomar Preeti 
Published: February 2017

The addition of traces of Au(III) chloride with Ce(IV) sulphate (catalyst: substrate ratio (1: 80 to 1: 300)) and in case of Cu(II) sulphate with Ce(IV) sulphate(catalyst: substrate ratio (1: 60 to 1: 250)) in solution phase under microwave irradiation resulted in good to excellent yields of corresponding to phenol, quinone and carbonyl compounds. In case of oxidation of anthracene, phenanthrene, naphthalene, cyclohexane and toluene dissolved in acetic acid to give 95.02 %, 85.25%, 34.68%, 40.94%, and 56.54% yields in case of gold catalyst and 93.5%, 83.4%, 24.68%, 38.25% and 47.11% yields in case of copper as a catalyst. Phenanthrene was oxidized in 9-Fluorenone instead of phenanthraquinone to get the benzylic rearrangement.
PERFORMANCE APPRAISAL SYSTEM IN MAJAN ELECTRICITY COMPANY (SOHAR, OMAN) AND ITS IMPACT ON EMPLOYEES’ MOTIVATION
Authors: Al Fazari Maryam , Khan Dr. M. Firdouse Rahman 
Published: February 2017

Purpose
The objective of the study is to investigate whether the performance appraisal system used is in Majan Electricity Company, (Oman), measures the employees’ performance accurately and to ensure motivation and satisfaction of its employees.
Design/methodology/approach
The study was conducted with 106 employees from all the departments of the main office of the company located at Sohar, who were selected on stratified random sampling basis and were contacted through a well-defined questionnaire.
Findings
The study reveals that even if there is a problem with the accuracy of performance appraisal system in measuring the performance accurately, or due to rater error in the evaluation process, the employees’ performance appraisal is not affected by them and has got positive impact on employees’ motivation and satisfaction.
Practical Implications
The study demonstrates that there is a strong association between the (i) performance appraisal system and (ii) motivation of the employees and the employees’ satisfaction. It is also found that there is no relationship between performance appraisal system, rater errors, and the accuracy of performance appraisal system.
Social Implications
Performance appraisal system is dependent on motivation of the employees and employees’ satisfaction. So, there exists necessity for the company to pay attention towards motivating the employees through concentrating on increasing the satisfaction of the employees.
Originality/value
No study have examined the impact of performance appraisal system of the Majan Electricity Company in Sohar ever before considering employee’s motivation and the welfare of the employees in one hand and the management on the other, and it is first hand study of its kind.
Research limitations/Implications
The study was restricted to the main office of the company located at Sohar, Oman. The study could be extended to know the insight of the personnel involved in the entire Majan Electricity Company, Oman.
The Everted Flap: Preliminary Results
Authors: Fugazzotto Paul A. , DePaoli Sergio 
Published: February 2017

Introduction: Attainment of primary soft tissue closure at the time of guided bone regeneration (GBR) therapy often requires significant crestal repositioning of the buccal mucoperiosteal flap, resulting in compromise of the buccal vestibule and loss of mucogingival confluence in the area. The everted flap technique (EFT) is used at the time of extraction of teeth demonstrating bone loss beyond their apices and complete epithelialization of the extraction socket. The EFT uses the tissues within the extraction socket as part of the buccal mucoperiosteal flap, thus obviating the need for crestal mucoperiosteal flap repositioning after placement of regenerative material and covering membranes.Case Presentation: Out of 118 patients treated using the EFT in the authors' private practices, one primary case and two supplementary cases are presented here. Soft tissue primary closure was attained and maintained throughout the course of regeneration in all patients. No patients required repositioning of a buccal mucoperiosteal flap at a second surgical visit to reform the buccal vestibule and/or reestablish mucogingival confluence in the area.Conclusion: The EFT offers a means by which to help attain passive soft tissue primary closure after GBR therapy without crestal repositioning of the buccal mucoperiosteal flap and to lessen the need for buccal soft tissue repositioning.
Phenotype of the First Gynogenesis Generation of Koi
Authors: Alimuddin , , Sumantadinata K. , Hadiroseyani Yani , Irawan D. 
Published: February 2017

<p>ABSTRACT</p><p>This experiment was conducted to study phenotype of F<sub>1</sub> koi that obtained from gynogenesis at the Laboratory of Fish Genetic and Breeding, Department of Aquaculture, Faculty of Fisheries and Marine Sciences, Bogor Agricultural University (IPB). Females koi used for this experiment were <em>kohaku</em> (white-red), <em>hi-utsuri</em> (red-black), and <em>shiro-bekko</em> (white-black); whereas males used <em>kohaku</em>, <em>hi-utsuri</em>, and <em>shiro-bekko</em>. Analysis on body coloration of fish was carried out at three months old. Results showed that gynogenesis from <em>kohaku</em> produced three types of koi, those were white koi, red koi and <em>kohaku</em>, and <em>hi-utsuri</em> produced red koi, black koi and hi-utsuri. Meanwhile, <em>shiro-bekko</em> by gynogenetic technique produce seven types of koi; those were white, red, black, <em>kohaku</em>, <em>shiro-bekko</em>, <em>hi-utsuri</em> and <em>sanke</em> (white-red-black koi). Survival rate of gynogenetic koi was lower then normal might be due to inbreeding stress.</p><p>Key words : Gynogenesis, phenotype, koi fish (<em>Cyprinus carpio</em>).</p><p> </p><p>ABSTRAK</p><p>Studi tentang fenotip keturunan pertama ikan koi hasil ginogenesis telah dilakukan di Laboratorium Pengembangbiakan dan Genetika Ikan, Jurusan Budidaya Perairan, Fakultas Perikanan dan Ilmu Kelautan IPB. Ikan koi betina yang dipakai adalah <em>kohaku</em> (putih-merah), <em>hi-utsuri</em> (merah-hitam) dan <em>shiro-bekko</em> (putih-hitam), sedangkan jantannya adalah <em>kohaku</em>, <em>hi-utsuri</em>, dan <em>shiro-bekko</em>. Analisis warna pada ikan dilakukan setelah ikan berumur tiga bulan. Hasil penelitian menunjukkan bahwa ginogenesis pada ikan kohaku menghasilkan tiga jenis ikan koi, yaitu koi putih, koi merah dan <em>kohaku</em>; pada ikan <em>hi-utsuri</em> dihasilkan ikan koi merah, koi hitam dan hi-utsuri. Sementara itu, teknik ginogenesis untuk ikan koi putih-hitam dihasilkan tujuh macam jenis ikan koi, yaitu koi putih, koi merah, koi hitam, <em>kohaku</em>, <em>hi-utsuri</em>, <em>siro-bekko</em> dan <em>sanke</em> (putih-merah-hitam). Tingkat kelangsungan hidup ikan ginogenetik lebih rendah daripada kontrol normalnya.</p><p>Kata kunci : Ginogenesis, fenotip, ikan koi (<em>Cyprinus carpio</em>)</p>