bluuebunny/crossref_metadata_2025_split huggingface dataset:
Factors Determining Success in Youth Judokas
Authors: Kuvačić Goran , Krstulović Saša , Caput Petra Đapić 
Published: March 2017

Abstract
The aim of this study was to compare two models of determining factors for success in judo. The first model (Model A) included testing motor abilities of high-level Croatian judokas in the cadet age category. The sample in Model A consisted of 71 male and female judokas aged 16 ± 0.6 years who were divided into four subsamples according to sex and weight category. The second model (Model B) consisted of interviewing 40 top-level judo experts on the importance of motor abilities for cadets’ success in judo. According to Model A, the greatest impact on the criterion variable of success in males and females of heavier weight categories were variables assessing maximum strength, coordination and jumping ability. In the lighter weight male categories, the highest correlation with the criterion variable of success was the variable assessing agility. However, in the lighter weight female categories, the greatest impact on success had the variable assessing muscular endurance. In Model B, specific endurance was crucial for success in judo, while flexibility was the least important, regardless of sex and weight category. Spearman’s rank correlation coefficients showed that there were no significant correlations in the results obtained in Models A and B for all observed subsamples. Although no significant correlations between the factors for success obtained through Models A and B were found, common determinants of success, regardless of the applied model, were identified.
Lower Leg Length is Associated with Running Economy in High Level Caucasian Distance Runners
Authors: Laumets Rauno , Viigipuu Karel , Mooses Kerli , Mäestu Jarek , Purge Priit , Pehme Ando , Kaasik Priit , Mooses Martin 
Published: March 2017

AbstractThe aim of the present study was to investigate lower limb anthropometric and composition variables related to running economy (RE) and running performance in a homogeneous group of high level European distance runners. RE at the speeds of 14, 16 and 18 km·h−1(189 ± 12; 188 ± 11; 187 ± 11 O2ml·kg−1·km−1) and maximal oxygen uptake (VO2max) (67.3 ± 2.9 ml·kg−1·min−1) of 13 high level distance runners were determined on a motorised treadmill. Anthropometric variables and body composition were measured. The BMI was related to RE at the speed of 14 (r2= 0.434; p = 0.014), 16 (r2= 0.436; p = 0.014) and 18 km·h−1(r2= 0.389; p = 0.023). Lower leg length was negatively related to RE at the speed of 16 and showed such a tendency at the speed of 14 and 18 km·h−1. VO2maxindicated a moderate relationship with RE at the speeds of 14, 16 and 18 km·h−1(r2= 0.372, p = 0.030; r2= 0.350, p = 0.033; r2= 0.376, p = 0.026, respectively) which was confirmed by subsequent partial correlation analysis. While lower leg length and the BMI presented a relationship with RE, none of the calculated body composition and anthropometric proportions were related to RE or performance. The relationship between RE and VO2maxwould confirm the notion that RE could be at least partly compensated by VO2maxto achieve high performance results.
Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films
Authors: Dragounová Kateřina , Potůček Zdeněk , Potocký Štěpán , Bryknar Zdeněk , Kromka Alexander 
Published: March 2017

Abstract
In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 - 300 K and used to determine the temperature dependence of the zero-phononline full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.
One-sound morphemic elements in the base of the derivational suffixes in Orkhon Inscriptions
Authors: Ahmadova Aysel 
Published: March 2017

Abstract
In this paper, the origin of Turkic derivational suffixes is discussed. It was noted that there are various approaches to this case, one of them being the theory of grammaticalization which suggests that Turkic derivational suffixes come from content words, while the other being based on the one-sound morphemic elements that are common to some derivational suffixes. The main one-sound formants in the language of Orkhon Inscriptions that we investigate are the elements -l, -g, and -m. The element -l occurs both in denominal and deverbal words, whereas the formants -g and -m are registered mostly in deverbal nominal words.
The Assessment of Knowledge of Organisational - Administrative Procedures in the Case of a Bioterrorist Threat in Selected Environmental Populations
Authors: Henrykowska Gabriela , Lipiński Marcin , Dziedziaczak-Buczyńska Maria , Zawadzka Magdalena 
Published: March 2017

Abstract
In the past we have seen numerous cases of the purposeful utilisation of micro-organisms and toxins. This situation forced us to undertake actions aimed at a limitation of the production and storage of biological weapons. Unfortunately, despite the signing of the Convention on Biological and Chemical Weapons, many countries are still involved in research into the use of biological agents as a military resource.
The objective of the work was to perform an assessment of the knowledge of threats connected with bioterrorism as well as of the procedures in the case of a bioterrorist attack in two different urban populations - i.e. of below 50 thousand and above 500 thousand inhabitants.
The study was conducted in two towns, Nysa and Łódź. A self-designed questionnaire included 100 persons from each town, both men and women aged between 18 and 65 years. Despite the small differences between the researched populations, the knowledge of respondents concerning bioterrorist threats and procedures during an attack is insufficient.
On the basis of the obtained results we may conclude that there is a need to educate the entire society, irrespective of the place of residence, in order to raise an awareness with regard to the potential threat and procedures in the event of a bioterrorist attack.
“I had to Leave, to get some Air.” The Swedish Encounter with the Stein Salons
Authors: Lundén Rolf 
Published: March 2017

Abstract
In the early days of Modernism, numerous Swedish artists and intellectuals paid visits to the salons of the Steins in rue de Fleurus and rue Madame in Paris. The Steins did not pay them much attention, however. In contrast, many of the Swedes recorded their impressions of the Steins and their art exhibits in articles and memoirs. These impressions and analyses have so far not been discussed in a comprehensive way. This article analyzes the Swedish response to the Steins and their salons, shedding new light and complementing the reactions of visitors from other nations. It further highlights the significant roles played by, for instance, Carl Palme, Isaac Grünewald, and David Edstrom. Most importantly, the article presents for the first time a long paraphrase of an exposition on modernist art by Leo Stein, recorded in 1909 by Tor Hedberg, the future member of the Swedish Academy.
Central hemodynamic and splanchnic circulation in children with meningococcal septic shock
Authors: Georgiyants M. A. , Korsunov V. A. , Olkhovska O. M. 
Published: March 2017

Meningococcal infection is caused by the bacterium Neisseria meningitidis (also termed meningococcus). Invasive meningococcal disease remains a rare infectious disease not only with high mortality but also with important morbidity and remains as a leading cause of sepsis and septic shock. The pathogenic mechanisms of microcirculatory disorders in meningococcal septic shock have been subject to controversy. This article presents the results of a study of 11 paediatric patients’ (4 boys and 7 girls) with meningococcal septic shock (Group I) who were hospitalized at the Regional Children's Infectious Hospital from 2009 to 2011. The average age of the patients was 37.4 ± 8.4 mo. Septic shock was diagnosed according to International Pediatric Sepsis Consensus Conference: definitions of criteria for sepsis and organ dysfunction in paediatrics. Heart rate, respiratory rate, systolic blood pressure, diastolic blood pressure, average blood pressure, SpO2 were monitored. The cardiac output, ejection fraction, fraction shortening, stroke volume were measured by ultrasound in M-mode by Teichholz method. Blood circulation in the a. mesenterica, a. hepatica, a. lienalis, a. renal sinister, v. porta, v. lienalis, v. renal sinister was determined by impulse Doppler’s wave. Acid-base and electrolytes level in serum, nitric oxide (NO), endothelin I, creatinine, C-reactivity protein and lactate blood level were measured. The control group consisted of 21 healthy children (9 boys and 12 girls), aged 37.5 ± 5.4 mo. in average (Group II). We used t-criteria (Student’s) and correlation with R-criteria (Spearmen) for statistical analysis. The data showed a statistically significant lower fraction of ejection, fraction of shortening, stroke volume in Group I. Moreover, our data showed a statistically high level of mesenterial and portal blood flow rate and high pulse index in v. renal sinister compared to healthy children. The blood level of NO was increased in Group I as well as in Group II. Direct correlations were determined between the level of NO and mesenteric, hepatic arterial and venous blood flow rate. Statistically significant inverse correlations between the level of NO and pulse resistive index in splanchnic vessels were discovered as well as inverse correlations between the NO level and the indicator of the severity of condition on PRISM scale (r = –0.952). At the same time, we have found no correlation between splanchnic circulation value and cardiac output. Based on the results of this study, we consider that NO has organ protective effects in children with meningococcal sepsis. Future research should aim to introduce new strategies of intensive care for patients with meningococcal septic shock with early use of inotrope and NO-donor therapy in fluid restriction combination.
The Internet’s effect on personality traits: An important casualty of the “Internet addiction” paradigm
Authors: Aboujaoude Elias 
Published: March 2017

Background and aims
The “Internet addiction” paradigm has been criticized for several shortcomings, including inattention to specific online behaviors, not distinguishing the Internet from other media, insufficient focus on comorbidities, and definitions that do not take into account the constant access now possible. The paradigm’s biggest casualty, however, may be that it has diverted attention away from subtle personality changes that seem to occur online, including in users who cannot be considered “addicted” under any definition.

Methods
A narrative assessment of the literature was conducted, focusing on the Internet’s effects on personality traits as revealed in studies of Internet users.

Results
Impulsivity, narcissism, and aggression are some of the personality traits that seem to be nurtured by the Internet, with possible negative offline consequences.

Discussion
Ignoring the Internet’s subtle effects on personality as we embrace an addiction model that implies severe pathology makes the majority of Internet users feel deceptively immune to the psychological effects of new technologies. It also limits our understanding of the big cultural shifts that are happening as a result.

Conclusion
The Internet’s potentially negative effect on personality, and by extension on society at large, is a fundamental part of online psychology, one well worthy of further investigation.
Lost in the chaos: Flawed literature should not generate new disorders
Authors: Van Rooij Antonius J. , Kardefelt-Winther Daniel 
Published: March 2017

The paper by Kuss, Griffiths, and Pontes (2016) titled “Chaos and confusion in DSM-5 diagnosis of Internet Gaming Disorder: Issues, concerns, and recommendations for clarity in the field” examines issues relating to the concept of Internet Gaming Disorder. We agree that there are serious issues and extend their arguments by suggesting that the field lacks basic theory, definitions, patient research, and properly validated and standardized assessment tools. As most studies derive data from survey research in functional populations, they exclude people with severe functional impairment and provide only limited information on the hypothesized disorder. Yet findings from such studies are widely used and often exaggerated, leading many to believe that we know more about the problem behavior than we do. We further argue that video game play is associated with several benefits and that formalizing this popular hobby as a psychiatric disorder is not without risks. It might undermine children’s right to play or encourage repressive treatment programs, which ultimately threaten children’s right to protection against violence. While Kuss et al. (2016) express support for the formal implementation of a disorder, we argue that before we have a proper evidence base, a sound theory, and validated assessment tools, it is irresponsible to support a formal category of disorder and doing so would solidify a confirmatory approach to research in this area.
Absence of a Steady State in Hydrogen Diluted Silane Plasmas Due to Mass Dependent Gas Pumping Speeds and Its Consequences
Authors: Ganguly G. , Wood G. , Newton J.N. , Bennett M. , Carlson D.E. , Arya R.R. 
Published: March 2017

AbstractWe have investigated the cause for continued changes in the silane related species observed using mass spectroscopy during i-layer deposition process lasting several tens of minutes. Silane decomposition is found to influence the mass spectrometer filament and therefore, pressure changes were compared to ascertain differences in pumping speed using a rotary, mechanical pump. The cathode voltage was used as a measure of effective hydrogen to silane ratio in real time and deliberate tailoring of this ratio is seen to result in a discernible difference in the degradation of single junction amorphous silicon solar cells. Some obvious consequences of this subtle, pump-type dependent transient behavior are discussed.
Low Temperature Formation of Silicon Nitride Film: Combination of Catalytic-Nitridation and Catalytic-CVD
Authors: Izumi A. , Kikkawa A. , Matsumura H. 
Published: March 2017

AbstractIn this work silicon nitride films are formed as substrate temperatures 250°C by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that inserting nitridation layer about 2 nm-thick before growing the silicon nitride films, injection-type hysteresis of capacitance-voltage curve is drastically reduced from 1.4 V to 0.05 V for 40 nm-thick SiNx.
Light-Induced Degradation in Solar Cells with Hydrogenated Amorphous Silicon-Sulfur Active Layers
Authors: Xu Wei , Taylor P. C. 
Published: March 2017

AbstractWe have made a series of a-SiSx:H based solar cells, with a pin structure, in a multichamber plasma enhanced chemical vapor deposition (PECVD) system. The sulfur concentration ranges from zero to 5 x 1018 cm-3 as measured by secondary ion mass spectroscopy. The initial conversion efficiencies of cells in this series with sulfur concentrations ≤ 1018 cm-3 are approximately 7%. The time constants for degradation increase with increasing sulfur concentration, but not fast enough to be of practical importance in photovoltaic devices.
Effect Of Increasing Growth Rates on Film Properties and Device Performance for DC Glow Discharge Amorphous Silicon
Authors: Heath Jennifer T. , Gutierrez James J. , Cohen J. David , Ganguly Gautam 
Published: March 2017

AbstractWe have examined the electronic properties of intrinsic amorphous silicon films as a function of deposition rate, and compared these with the performance of companion solar cell p-i-n devices. The device efficiency in the light-soaked state was strongly inversely correlated with growth rate. Film properties were evaluated in both the as-grown and light soaked states using drive-level capacitance profiling and transient photocapacitance spectroscopy. Although deep defect densities measured by drive-level capacitance profiling did not vary significantly between samples, the magnitude of the defect band deduced via transient photocapacitance spectroscopy was well correlated with device performance. Possible reasons for this discrepancy are discussed. Urbach energies were also correlated with film growth rate.
Surface Diffusion of SiH3 Radicals and Growth Mechanism of a-Si:H and μc-Si
Authors: Dewarrat R , Robertson J 
Published: March 2017

AbstractExisting growth mechanisms of hydrogenated amorphous silicon (a-Si:H) and micro-crystalline silicon assume that the growth species SiH3 can diffuse over the hydrogen-saturated Si surface. However, recent calculations suggest that this could not happen. Local density formalism pseudopotential calculations have been carried out of binding of SiH3 to hydrogen terminated (111)Si surfaces. The bound site is not the three-centre Si-H-Si bridging site previously assumed. It has a direct Si-Si bond between the SiH3 and the surface Si, and the surface hydrogen is displaced to a bond centre of a surface Si-Si bond. A bound site confirms conventional models of growth of a-Si:H and microcrystalline Si, in which a mobile growth species creates smooth surfaces.
Photoconductivity Stability Improvement in Hydrogenated Amorphous Silicon by Ultraviolet Illumination
Authors: Branz Howard M. , Xu Yueqin , Heck Stephan , Wang Qi , Gao Wei , Crandall Richard S. , Nelson Brent P. 
Published: March 2017

AbstractWe observe improved photoconductivity stability against light-soaking in hydrogenated amorphous silicon thin films as a result of an ultraviolet (UV) illumination and etch treatment. UV-etch treated samples begins with red-light photoconductivities inferior to that of a control sample which is only etched. After less than an hour of 1 sun red light-soaking, the photoconductivity of the etched-only control falls below that of the UV-etch treated sample. After 2 to 3 days light soaking, the UV-etch films can have a photosensitivity 20 to 38% above their control. We observe no corresponding improvement of defect optical absorption by constant photocurrent method spectroscopy. The UV-etch treatment also produces small improvements in the stabilized open-circuit voltage of Schottky barier solar cells. We speculate that mobile hydrogen produced during UV illumination is penetrating the film and improving stability.
Spectroscopy of Ecr Plasma Used for Depositing Amorphous and Microcrystalline Silicon Films
Authors: Pontoh Marsela , Dalal Vikram L. , Gandhi Neha 
Published: March 2017

AbstractElectron-cyclotron-resonance (ECR) plasma are used extensively to deposit amorphous and microcrystalline Si and (Si,Ge) films, and for depositing oxides and nitrides of Si. In this paper, we discuss the results of optical emission spectroscopy, Langmuir probe measurements and mass-spectrometery measurements of the ECR plasma when used to deposit a-Si films. We study He and H diluted plasmas. We find that the addition of hydrogen to the gas mixture immediately reduces the flux of the active (e.g. SiH, SiH2,SiH3) radicals and ions that are responsible for the growth of films. Thus, introducing hydrogen in the mixture reduces the growth rate significantly, not only because it etches the film during growth, but primarily because it reduces the production of the needed growth radicals. We find an excellent correlation between growth rates and SiH intensity signal. A surprising result is that the densities of all three ions, SiH, SiH2 and SiH3, arriving at the substrate are comparable in magnitude in this low pressure reactor, with the SiH ion density becoming larger than the SiH3 density at higher powers. This observation raises some doubt about the standard model for growth that states that SiH3 is the dominant radical responsible for growth during plasma CVD processes. We also find that decreasing the pressure increases the ratio of H/H2 arriving at the substrate, which in turn means that more H ions and atoms are available to do etching of the growing film and change its properties at lower pressures.
Analysis of Post-Transit Photocurrent-Time Data by Application of Tikhonov Regularization
Authors: Gueorguieva Mariana J. , Main Charlie , Reynolds Steve 
Published: March 2017

AbstractA novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.
Influence of the Beam Irradiation Condition With Oblique Incidence on Crystallization of an Si film by a Linearly Polarized Pulse Laser
Authors: Nakata Yasunori , Kaki Hirokazu , Horita Susumu 
Published: March 2017

AbstractWe investigated influence of the beam irradiation conditions with oblique incidence on crystallization of an Si film by a linearly polarized pulse laser in order to enlarge the periodic width of grain boundary. The irradiation conditions are fluence, pulse number and film thickness. We can obtain the periodic width of about 900 nm by increasing the incident angle to 25°. The experimental results suggest that the pulse number and the film thickness should be controlled properly as well as fluence in order to produce large grain stably for the oblique incidence. The detail of these conditions was discussed.
On Mechanism Of Nickel Diffusion During Metal Induced Lateral Crystallization Of Amorphous Silicon
Authors: Myasnikov A.M. , Poon M.C. , Chan P.C. , Ng K.L. , Chan M.S. , Chan W.Y. , Singla S. , Yuen C.Y. 
Published: March 2017

AbstractDuring metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality of obtained film depend on nickel penetration and it is very important to know about nickel diffusion at recrystallization process. The nickel has penetrated during annealing on surface of a-Si inducing the recrystallization process, which has changed the mechanism of diffusion on surface of a-Si to the mechanism of diffusion on surface of single crystal silicon and in single crystal silicon. Also the effect of thickness of nickel and a-Si film are discussed.
Low Tempeature Lateral Crystallization of Amorphous Silicon on Glass
Authors: Rezaee Leila , Akhavan Aarash , Mohajerzadeh Shamsoddin , Khakifirooz Ali 
Published: March 2017

AbstractLow temperature lateral growth of amorphous silicon films has been achieved on thin flexible glasses using ultra-violet assisted metal-induced crystallization technique. 125μm ordinary glass substrate is sputter-coated with 1500Å chromium and a 1000Å SiN layer, respectively. 1000Å Si film was deposited using e-beam evaporation at a temperature of 350°C. Equally spaced dots of nickel pads with 140μm separation were used as seed of crystallization of a-Si layer. Crystallinity of the samples was studied using XRD, SEM and optical microscopy. Some crystallographic etchants were used to develop the crystal orientations for SEM analysis. Based on this study, a lateral growth rate of 2μm/hr is obtained at a temperature of 380°C. Activation energy of 1.4 to 1.5eV is extracted for this UV-assisted MILC process.