bluuebunny/crossref_metadata_2025_split huggingface dataset:
A Bayesian Approach for Analysis of Whole-Genome Bisulfite Sequencing Data Identifies Disease-Associated Changes in DNA Methylation
Authors: Rackham Owen J L , Langley Sarah R , Oates Thomas , Vradi Eleni , Harmston Nathan , Srivastava Prashant K , Behmoaras Jacques , Dellaportas Petros , Bottolo Leonardo , Petretto Enrico 
Published: February 2017

AbstractWhole-genome bisulphite sequencing (WGBS) can identify important methylation differences between diseased and healthy samples. However, results from...DNA methylation is a key epigenetic modification involved in gene regulation whose contribution to disease susceptibility remains to be fully understood. Here, we present a novel Bayesian smoothing approach (called ABBA) to detect differentially methylated regions (DMRs) from whole-genome bisulfite sequencing (WGBS). We also show how this approach can be leveraged to identify disease-associated changes in DNA methylation, suggesting mechanisms through which these alterations might affect disease. From a data modeling perspective, ABBA has the distinctive feature of automatically adapting to different correlation structures in CpG methylation levels across the genome while taking into account the distance between CpG sites as a covariate. Our simulation study shows that ABBA has greater power to detect DMRs than existing methods, providing an accurate identification of DMRs in the large majority of simulated cases. To empirically demonstrate the method’s efficacy in generating biological hypotheses, we performed WGBS of primary macrophages derived from an experimental rat system of glomerulonephritis and used ABBA to identify &gt;1000 disease-associated DMRs. Investigation of these DMRs revealed differential DNA methylation localized to a 600 bp region in the promoter of the Ifitm3 gene. This was confirmed by ChIP-seq and RNA-seq analyses, showing differential transcription factor binding at the Ifitm3 promoter by JunD (an established determinant of glomerulonephritis), and a consistent change in Ifitm3 expression. Our ABBA analysis allowed us to propose a new role for Ifitm3 in the pathogenesis of glomerulonephritis via a mechanism involving promoter hypermethylation that is associated with Ifitm3 repression in the rat strain susceptible to glomerulonephritis.
KALBA BARBARAI: „ISTORIOGRAFINIS TEATRAS“ IR JO POVEIKIS HENRIKO LATVIO LIVONIJOS KRONIKOJE
Authors: Markevičiūtė Ramunė 
Published: February 2017

Straipsnyje aptariami draminio pasakojimo, t. y. pasisakymų tiesiogine kalba, paskirtis ir poveikis viduramžių istoriografijoje, ypatingą dėmesį skiriant draminių epizodų pavyzdžiams Henriko Latvio Livonijos kronikoje.Šioje kronikoje minimas Rygos miesto centre surengtas „pranašų spektaklis“ (ludus prophetarum), skirtas miesto krikščioniškajai bendruomenei, taip pat lyvių ir latvių naujakrikštams. Misionieriai teatrą pasitelkdavo katechetiniams tikslams, kai prireikdavo įtaigiai paaiškinti krikščioniškąsias doktrinas neišmanantiems ir naujai pakrikštytiems bendruomenės nariams. Dramos keliamas stiprus emocinis poveikis nuo pat Antikos laikų skatino ir istorikus savo tekstuose įterpti draminių pasakojimų.Remiantis Aristotelio Poetika straipsnyje siekiama parodyti, kad draminis pasakojimas viduramžių istoriografijoje atitinka aristoteliškuosius poetinio žmogaus veiksmų vaizdavimo reikalavimus. Skirdamas poeziją nuo istoriografijos, Aristotelis pabrėžia, kad poetas turi vaizduoti ne tai, kas iš tiesų įvyko tikrovėje, o tai, kas tikėtinai ar būtinai galėjo įvykti. Todėl istoriografinių tekstų dialogai ir kalbos per se kelia istorinės tiesos klausimą. Straipsnyje siekiama parodyti, kad viduramžių istoriografijos prieiga prie istorinės tiesos skiriasi nuo moderniųjų istoriografijos standartų, reikalaujančių nuosaikaus istorinių įvykių aprašymo. Ikimodernistinės minties požiūriu, draminis ar net poetinis įvykių vaizdavimas jų faktiškumui neprieštarauja: pasitelkiant tam tikrą, nors ir fiktyvų scenarijų, apie pavaizduotą asmenį perteikiama žinutė, kurios turinys yra svarbesnis už istorinių aplinkybių detales.Draminio istorinių veikėjų vaizdavimo prasmė ir paskirtis iliustruojama pavyzdžiais iš Livonijos kronikos, kurios autorius, norėdamas išreikšti tam tikras vaizduojamų asmenų savybes, priskiria jiems paradigminius vaidmenis. Pagrindiniai šio teksto, siekiančio pateisinti karinę krikščionių ekspansiją Baltijos kraštuose, veikėjai yra vokiečių kryžiaus kariai ir vietinės tautos, arba barbarai. Skaitant autoriaus aprašomas žiaurias kovas tarp vokiečių ir vietos gyventojų, galima būtų tikėtis ir atitinkamai niūriomis spalvomis tapomo žiauraus ir klastingo barbaro paveikslo; tačiau įdėmiau išanalizavus pagonis vaizduojančius draminius epizodus pasirodo, kad barbaro vaizdavimas nėra toks vienareikšmis. Daroma išvada, kad kronikos autorius naudojo draminį pasakojimą, kad tendencingame tekste išreikštų kitokį požiūrį.
Mit tehet a háziorvos a mammográfiás szűréseken való részvétel javításáért? A prevenciós nővér szerepe
Authors: Móczár Csaba , Ambrózay Éva , Lehoczky Nyina 
Published: February 2017

Abstract: Introduction: In our country the participation rate in screenings, including mammographic screening is very low. Restructuring of primary care system through the development of practice teams is an important task. Aim: The authors examined the effectiveness of prevention nurses’ work as a member of the practice team on the organization of mammographic screening. Method: Prevention nurses looked up women who did not participate in mammographic screening two years before proceeding the reference period according to a protocol. The program was gradually extended to all family doctor practices in Kecskemét. Results: In the author’s own practice is that the turnout could be achieved and sustained over 60% with this method. During the extension of the program on a representative sample respect of Kecskemét 36.7% of patients who did not participate in screening in the previous two years were involved in mammographic screening again. Extending the entire target population of Kecskemét authors found that the 16–20% of non-screened patients participated again and whole screening rate rose above 70% in the city. Conclusions: The program proved that a prevention nurse as a practice team member can coordinate the tasks of screening effectively making a connection among the family doctors, screening centers and patients. Orv. Hetil., 2017, 158(8), 311–315.
Allogén vérképzőőssejt-átültetés Magyarországon
Authors: Bátai Árpád , Reményi Péter , Réti Marienn , Barta Anikó , Gopcsa László , Lengyel Lilla , Torbágyi Éva , Csukly Zoltán , Karászi Éva , Tordai Attila , Andrikovics Hajnalka , Balassa Katalin , Tasnády Szabolcs , Masszi Tamás 
Published: February 2017

Abstract: Introduction and aim: The publication summarizes the 2548 stem cell transplantations performed in the period of 1993-2015 in Szent Laszló Hospital, Budapest and provides a detailed discussion of the 425 allogeneic transplantations during 2007–2013. Method: The analysis explains the major steps of the evolution of allogeneic stem cell transplantation and compares the results of the unique Hungarian allogeneic center. Results: The significant shift in the transplantation indications from chronic myeloid leukemia to myelodysplastic syndromes and the rising age of the recipients are in line with world wide tendencies. The latter one is the consequence of the introduction and improvement of the concept of reduced intensity conditioning regimens, originally arising from the idea of Endre Kelemen. The most limiting factor, the donor availability seems to be resolved with the use of a new immunomodulating regimen, the application of posttransplantation cyclophosphamide, which allows the transplantation through HLA barriers with haploidentical family donors with comparable results to the HLA matched volunteer unrelated donors. The above mentioned tendencies result the wider use of allogeneic stem cell transplantation less dependent from recipient age, comorbidities and even donor availability. Conclusions: The publication highlights the need of expanding the stem cell transplantation budget and the involvement of new centers in Hungary in allogeneic of stem cell transplantation. Orv. Hetil., 2017, 158(8), 291–297.
Analysis of Silicide / Diffusion Contact Resistance Making Use of Transmission Line Stuctures
Authors: Akheyar Amal , Lauwers Anne , Lindsay Richard , Potter Muriel de , Tempel Georg , Maex Karen 
Published: February 2017

AbstractThis work deals with the analysis of the resistances of Co-silicided As and B junctions. The influence of junction formation and salicide process on contact resistance was investigated. The contact resistance between the silicide and source/drain region was studied by making use of dedicated transmission line structures. The transmission line structures (TLM) consist of alternating silicided and unsilicided diffusion segments, obtained by making use of a salicide blocking mask. Our TLM results show that the contact resistance has a strong dependence on the doping profile of the diffused region and increases with decreasing surface doping, with increasing Co-silicide thickness, annealing temperatures and time of silicidation.
Solution-Based Precursor Delivery for Copper CVD
Authors: Wang Lidong , Griffin Gregory L. 
Published: February 2017

AbstractWe have measured growth rates and film properties for copper CVD using Cu(hfac)2 dissolved in isopropanol as the precursor delivery method. This approach offers the convenience and control associated with liquid precursor delivery, while avoiding the need to handle the precursor at its high melting point. The method provides similar growth rates to those observed using conventional delivery by solid sublimation, with the additional benefit that these growth rates are achieved using a much lower partial pressure of precursor in the reactor. The growth rate is nearly independent of the partial pressure of Cu(hfac)2, isopropanol, and H2 over the range of operating conditions examined. The film morphology and resistivity are also largely unaffected by the deposition conditions. These results strongly suggest that the mechanism proceeds via an adsorbed intermediate formed by the reaction of Cu(hfac)2 and isopropanol, and that the surface is nearly fully saturated by this intermediate.
The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition
Authors: Hong Seok Woo , Lee Yong Sun , Park Ki-Chul , Park Jong-Wan 
Published: February 2017

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.
The Use of C-V Techniques To Investigate Instability Mechanisms in M-I-S Structures
Authors: Paul S. , Milne W.I , Robertson J. 
Published: February 2017

AbstractIn the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radiofrequency plasma-enhanced chemical vapour deposition technique.
Interfacial Sliding in Back-End Interconnect Structures in Microelectronic Devices
Authors: Peterson K.A. , Park C. , Dutta I. 
Published: February 2017

AbstractDeformation of interconnect structures at the back-end of microelectronic devices during processing or service can have a pronounced effect on component reliability. Here, we use atomic force microscopy (AFM) to study plastic deformation and interfacial sliding of Cu interconnects lines on Si. The behavior of both stand-alone Cu lines and lines embedded in a low K dielectric was studied. Following thermal cycling, changes were observed in the in-plane Cu line dimensions, as well as the out-of plane step height between Cu and dielectric in single layer structures. These were attributed to differential deformation of the Cu/Si and Cu/dielectric material pairs due to thermal expansion mismatch, accommodated by interfacial creep. These results are discussed in light of previous work on the mechanism of interfacial creep. Some preliminary results on the distortion of Cu lines due to package-level stresses are also presented.
New Technologies for Solar Grade Silicon Production
Authors: Karabanov Sergey M. 
Published: February 2017

AbstractThe paper presents the results of study of carbothermic reduction method for solar grade silicon (SG-Si) production. The interconnection between the purity of source materials and derivable silicon has been established. The technological concept of SG-Si production, including source materials preparation, carbothermic process, silicon filtration and crystallization is suggested. The comparative analysis data of different methods of SG-Si is given.
Phenomenological and Elementary Reaction Analysis of Poly-crystalline Silicon CVD Process
Authors: Shimizu Ryosuke , Januma Tadashi , Ogino Masaaki , Sugiyama Masakazu , Koshi Mitsuo , Shimogaki Yukihiro 
Published: February 2017

AbstractThickness uniformities of poly-crystalline silicon thin films, deposited by a commercial LPCVD reactor, were investigated through a phenomenological and elementary reaction analysis. To understand the deposition rate and its profile in radius direction of ø 6”h silicon wafer, concentration distributions of film precursors were examined by solving basic diffusion equations of film precursors in the CVD system. The experimental thickness distribution can be simulated very well with the solution by optimizing η, the sticking probabilities of the precursors. While most of the silicon deposition was made by source precursor (mono-silane, SiH4), two kinds of intermediate species with sticking probabilities of 5X10-2 and 7X10-4 were found to contribute the deposition. Subsequently, elementary chemical reaction analysis of poly-crystalline silicon CVD process was performed using ChemKinTM and two chemical species, SiH2 and Si2H6, were identified as the possible candidates for the intermediate species.
Interfacial Adhesion Study of Porous Low-K Dielectrics to CVD Barrier Layers
Authors: Lee Jeffrey A. , Wetzel Jeffrey T. , Merrill Caroline , Ho Paul S. 
Published: February 2017

AbstractThe present paper discusses the four-point bending technique employed at The University of Texas at Austin (UT Austin) to characterize adhesion strength of ultra low-k dielectric materials to CVD barrier layers. Adhesion energy between an ultra low-k dielectric material and a barrier layer was measured as a function of porosity (2.0 < k < 2.3). It was found that the fracture energy decreases with the dielectric constant, which correlates with mechanical properties such as Young's modulus and hardness. Adhesion measurement data was also obtained for different lowk / barrier layer interfaces. The independence of interfacial fracture energy on the type of interface suggests that cohesive failure occurs in the low-k material layer and not at the interface. In addition, the very low fracture energies (G < 3 J/2) confirm the weak mechanical properties of such highly porous materials. Experimental results are illustrated with analysis of failure surfaces using Auger Electron Spectroscopy and Scanning Electron Microscopy.
A Correlation Study of Thermal Stability on Porous Low k
Authors: Chow Y.F. , Foo T.H. , Shen L. , Pan J.S. , Du A.Y. , Xing Z.X. , Yuan Y.J. , Li C.Y. , Kumar R. , Foo P.D. 
Published: February 2017

AbstractThe thermal stability of organic porous low k, porous SiLK with a dielectric constant of 2.4, has been studied. Organic low k material SiLKTM, non-porous SiLK, with a dielectric constant 2.8 is used as a baseline for comparison. Each sample was subjected to annealing cycles, where each cycle was conducted in a vertical furnace for one hour in an N2 ambient. The annealing temperature was set at either 430°C or 450°C. After every alternate cycle, the film properties were measured and compared to the unannealed sample for changes in film shrinkage, refractive index, dielectric constant, roughness, breakdown voltage, pore size, hardness and Young's modulus. Changes in film properties were investigated and evaluated by using opti-probe, FTIR, XPS, AFM, mercury probe, nano-indentation, SEM and TEM techniques.
Length Effects on the Reliability of Dual-Damascene Cu Interconnects
Authors: Wei F. , Gan C. L. , Thompson C. V. , Clement J. J. , Hau-Riege S. P. , Pey K. L. , Choi W. K. , Tay H. L. , Yu B. , Radhakrishnan M. K. 
Published: February 2017

AbstractWe have carried out experiments on dual-damascene Cu interconnects with different lengths. We find that at short lengths, similar to Al-based interconnects, the reliability of Cubased interconnects improves. Also like Al interconnects, some short Cu segments do not form voids that cause failure before back-stresses prevent the further growth of voids. However, unlike Al-based interconnects, there is no apparent deterministic current-density line-length product (jL) for which all lines are immortal. This is related to the absence of a conducting refractory-metal overlayer in Cu-technology that can shunt current around small voids. Also unlike Al, we find that at long lengths a sub-population of Cu lines is immortal. We propose that this is the result of rupture of the thin refractory metal liner at the base of the dual-damascene Cu vias. As a consequence of this complex behavior, median times to failure and lifetime variations are minimum at intermediate line lengths.
Effect of Metallic Contamination on Interface Properties and Oxide Reliability
Authors: Oborina Elena , Campbell Scott , Hoff Andrew M. , Gilbert Richard , Persson Eric , Simpson Darrell 
Published: February 2017

AbstractNew and emerging process technologies such as Damascene interconnect, metal gate and metal silicide processes are creating metal contamination control challenges for current and future generations of integrated circuits. In this work, we studied the contamination of oxidized silicon wafers by several metals of industrial importance including copper, cobalt, sodium, iron and nickel. Contamination was applied by spin-coating in a range from 20ppb to 500 ppb. Such levels are representative of exposure challenges induced during chemical processes such as CMP (chemical mechanical planarization) cleans. Solvated contamination ions were driven into the oxide layer by corona temperature stress (CTS). The concentrations of metallic species incorporated within the oxide by CTS were quantified using VPD-ICPMS (vapor phase decomposition) and SIMS (secondary ion mass spectrometry) surface analysis techniques. Noncontact COCOS (Corona Oxide Characterization of Semiconductor) methods were employed to measure the electrical properties and reliability of nascent and contaminated oxide/silicon structures. We show that in the absence of significant signals from the surface analysis techniques the COCOS methods show signatures of the metallic contamination in the measurement results.
Ultrathin Si3N4 Films Deposited From Dichlorosilane For Gate Dielectrics Using Single-Wafer Hot-Wall Rapid Thermal CVD
Authors: Senzaki Yoshihide , Brichko Yakov , Barelli Carl , Herring Robert , Teasdale Dana , Schaefer Marci , Sisson Joseph 
Published: February 2017

AbstractUsing a hot-wall rapid thermal system which permits single-wafer processing, thin gate dielectrics consisting of silicon nitride films were fabricated by low pressure chemical vapor deposition (LPCVD). Nitride layers deposited from dichlorosilane (DCS) and ammonia exhibited greatly reduced electrical leakage current compared to silane-based nitride films which are conventionally used in lamp-based single-wafer rapid thermal technology. After a postdeposition anneal, the DCS-based gate dielectric films showed better diffusion barrier properties against boron penetration than silane-based gate dielectrics at a dopant activation temperature of 1000°C.
High Purity Silicon Amido Precursors for Low Temperature Cvd of High к Gate Silicates
Authors: Borovik A.S. , Xu C. , Hendrix B. C. , Roeder J. F. , Baum T. H. 
Published: February 2017

AbstractHigh purity silicon amido precursors provide a route to low temperature CVD of silicate gate dielectrics. We have developed a straightforward synthetic method for the production of high purity Si[N(CH3)2]4, Si(NMeEt)4, HSi(NEtMe)3 and HSi(NEt2)3 in high yield. These compounds were fully characterized by NMR, GC/MS, ICP-MS, ICchlorine, and elemental analysis. Their solution compatibility with an Hf amide source was also examined by chemical techniques. Low temperature CVD of metal silicate films is also demonstrated.
Metrology Study of Sub 20Å Oxynitride by Corona-Oxide-Silicon (COS) and Conventional C-V Approaches
Authors: Hung Pui Yee , Brown George A. , Zhang Michelle , Bennett Joe , AL-Shareef Husam N. , Young Chadwin , Oroshiba Chris , Diebold Alain 
Published: February 2017

AbstractThis work aims to develop an in-line corona-oxide-silicon (COS) monitoring strategy for the sub 20 Å oxynitride gate dielectrics. The oxynitride gate dielectrics were composed of In-Situ Steam Generated oxide (ISSG) oxide at thickness of 16Å and 20Å which were exposed to Remote Plasma Nitridation (RPN) for various time durations. The nitrogen density in the oxynitride established by SIMS and nuclear reaction analysis (NRA), was correlated with the non-contact electrical measurements taken by Quantox™. The non-contact electrical parameters included interface trap density (Dit), flatband voltage (Vfb), total charge (Qtot), equivalent oxide thickness (EOT) and leakage current. The pre-anneal Dit measurements exhibited a strong correlation with the nitrogen density and was the most sensitive process monitoring parameter. The Vfb and Qtot, on the other hand, showed little correlation. The ISSG/RPN oxynitride process required further optimization because there was no significant reduction in EOT for the annealed samples. Furthermore, the leakage current in the pre-annealed samples increased with the RPN exposure possibly indicating plasma damage. Conventional MOS C-V measurements were also conducted. Similar to the Qunatox™ results, there were no reductions in EOT or current density. A comparison between the C-V and the Quantox™ data indicated no simple linear relationship between these two techniques. Due to the limited samples used for the Quantox™/ C-V comparison, a more extensive work is required to confirm the present observation.