bluuebunny/crossref_metadata_2025_split huggingface dataset:
Expert Witness Participation in Civil and Criminal Proceedings
Authors: Narang Sandeep K. , Paul Stephan R. ,   COMMITTEE ON MEDICAL LIABILITY AND RISK MANAGEMENT, McDonnell William M. , Altman Robin L. , Bondi Steven A. , Fanaroff Jon Mark , Oken Richard L. , Rusher John W. , Santucci Karen A. , Scibilia James P. , Scott Susan M. 
Published: February 2017

This Technical Report was reaffirmed June 2024.
The interests of the public and both the medical and legal professions are best served when scientifically sound and unbiased expert witness testimony is readily available in civil and criminal proceedings. As members of the medical community, patient advocates, and private citizens, pediatricians have ethical and professional obligations to assist in the civil and criminal judicial processes. This technical report explains how the role of the expert witness differs in civil and criminal proceedings, legal and ethical standards for expert witnesses, and strategies that have been employed to deter unscientific and irresponsible testimony. A companion policy statement offers recommendations on advocacy, education, research, qualifications, standards, and ethical business practices all aimed at improving expert testimony.
Synthesis and characterization of some abundant nanoparticles, their antimicrobial and enzyme inhibition activity
Authors: Khan Shams T. , Malik Ajmaluddin , Wahab Rizwan , Abd-Elkader Omar H. , Ahamed Maqusood , Ahmad Javed , Musarrat Javed , Siddiqui Maqsood A. , Al-Khedhairy Abdulaziz A. 
Published: February 2017

Although the antimicrobial activity of the engineered nanoparticles (NPs) is well known, the biochemical mechanisms underlying this activity are not clearly understood. Therefore, four NPs with the highest global production, namely SiO2, TiO2, ZnO, and Ag, were synthesized and characterized. The synthesized SiO2, TiO2, ZnO, and Ag NPs exhibit an average size of 11.12, 13.4, 35, and 50 nm, respectively. The antimicrobial activity of the synthesized NPs against bacteria and fungi were also determined. NPs-mediated inhibition of two very important enzymes, namely urease and DNA polymerase, is also reported. The synthesized NPs especially Ag and ZnO show significant antimicrobial activity against bacteria and fungi including methicillin-resistant Staphylococcus aureus even at low concentration. The DNA polymerase activity was inhibited at a very low concentration range of 2–4 µg/ml, whereas the urease activity was inhibited at a high concentration range of 50–100 µg/ml. Based on their ability to inhibit the urease and DNA polymerase, NPs can be arranged in the following order: Ag > ZnO > SiO2 > TiO2 and Ag > SiO2 > ZnO > TiO2, respectively. As the synthesized NPs inhibit bacterial growth and suppress the activity of urease and DNA polymerase, the use of these NPs to control pathogens is proposed.
Suppression of Parasitic BJT Action in Single Pocket Thin Film Deep Sub-Micron SOI MOSFETs.
Authors: Najeeb-ud-Din  , Mohan Aatish K. , Dunga V. , Rao V. Ramgopal , Vasi J. 
Published: February 2017

AbstractA study of parasitic bipolar junction transistor effects in single pocket thin film siliconon-insulators (SOI) nMOSFETs has been carried out. Characterization and simulation results show that parasitic bipolar junction transistor action is reduced in single pocket SOI MOSFETs in comparison to homogeneously doped conventional SOI MOSFETs. A novel Gate-Induced-Drain-Leakage (GIDL) current technique was used to characterize the SOI MOSFETs. 2 - D simulations were carried out to analyze the reduced parasitic bipolar junction effect in single pocket thin film SOI MOSFETs.
Microstructural Evolution and Defects in Ultra-thin SIMOX Materials during Annealing
Authors: Jeoung Jun Sik , Evans Rachel , Seraphin Supapan 
Published: February 2017

AbstractThe microstructure of ultra-thin SIMOX depends strongly on implantation dose, energy and annealing conditions. We used TEM combined with AES and RBS to determine the microstructural evolution of SIMOX wafers subjected to various temperatures during annealing. We found that an optimum dose window to produce a continuous buried oxide layer without Si islands is 3.0-3.5×1017 O+/cm2 for 100 keV. The thickness of the silicon overlayer and BOX layer produced in this dose window was about 170 nm and 75 nm respectively. RBS analysis showed that a high quality crystalline Si layer was produced after annealing at 1350 °C for 4 hrs. The defect density was very low (< 300/cm2) for all samples implanted at 100 keV.
X-Ray Reflectivity Study Of Exotic Materials For Electronic Applications
Authors: Russell C.H. 
Published: February 2017

AbstractAs device size continues to decrease, new challenges arise regarding shrinking dimensions, creating the need for thin, high-k dielectric materials, low-k dielectrics and other exotic materials. These new materials in turn create characterization issues, which cannot be resolved with traditional metrology tools. Critical structural parameters such as thickness, density, and interface roughness of a layer can be measured and monitored with X-ray reflectivity. A quick and reliable method of study regarding these materials is to base work on simulations using a very robust fitting program. This work incorporates a largely theoretical study of exotic materials of interest, including silicon oxynitride (SiOxNy), low-k (porous films) and high-k dielectrics (Ta2O5, HfO2), with a few selected experimental results.
A Self-Aligned Silicide Process Utilizing Ion Implants for Reduced Silicon Consumption and Control of the Silicide Formation Temperature
Authors: Cohen G. M. , Cabral C. , Lavoie C. , Solomon P. M. , Guarini K.W. , Chan K.K. , Roy R.A. 
Published: February 2017

AbstractWe propose a modified self-aligned silicide (salicide) process that uses Ge implantation and a silicon cap to reduce the silicon substrate consumption by 75% as compared with a conventional salicide process. We have used Ge implants to increase the cobalt disilicide formation temperature. This forces the cobalt to react primarily with a deposited silicon cap, thus minimizing consumption from the silicon substrate. We expect this process to be useful for making silicide on shallow junctions and thin SOI films, where silicon consumption is constrained.
Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation
Authors: Pan G.Z. , Chang E.W. , Rahmat-Samii Y. 
Published: February 2017

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.
Micro-raman spectroscopic investigation of NiSi films formed on BF2+-, B+-and nonimplanted (100) Si substrates
Authors: Donthu S. K. , Chi D. Z. , Wong A. S. W. , Chua S. J. , Tripathy S. 
Published: February 2017

AbstractMicro-Raman spectroscopic technique was used to investigate vibrational properties of NiSi thin films formed on three different (100) Si substrates: non-implanted, 20-keV BF2+-implanted, and 20-keV B+-implanted. Raman spectroscopy was also performed on NiSi powder to identify various phonon modes associated with different selection rules of group theory. It was found that Raman peaks of NiSi thin films formed on BF2+ implanted substrate were broader and shifted to lower frequency side compared to films formed on other substrates. The broadening of the Raman peaks in these films, which also exhibit much improved thermal stability, is attributed to small grains resulting probably from fluorine segregation to grain boundaries and interface. It is further proposed that besides grain boundary segregation, the excess fluorine in the film influences the stress-state in the silicide film resulting in shift of phonon peak positions.
Near-Field Ultrasonic Imaging: A Novel Method for Nondestructive Mechanical Imaging of IC Interconnect Structures
Authors: Shekhawat G. S. , Xie H. , Zheng Y. , Geer R. E. 
Published: February 2017

AbstractThe investigation of an alternate approach to nondestructive, nanoscale mechanical imaging for IC interconnect structures is reported. This approach utilizes a heterodyne interferometer based on a scanning probe microscope, also referred to as heterodyne force microscopy (HFM). This interferometer is sensitive to the relative phase difference of the two ultrasonic excitations due to spatial variations in the sample viscoelastic response and enables near-field, phase-sensitive imaging. Proof-of-feasibility demonstrations of this technique are presented for ultrasonic phase-imaging of Al/low-k interconnect structures. Spatial resolution <10 nm is demonstrated.
Post Blast Component Cleaning Techniques to Reduce Particle Generation in Etch and Deposition Chambers
Authors: Burgess Ronald , Laube Dave , Sidhwa Ardy , Spinner Chuck , Zheng Sanyi , Chew Tin Bun , Gandy Todd , Melosky Steve , Vetier Jerome 
Published: February 2017

AbstractParticles emanating from the walls, shields, and other components of the chambers in which integrated circuit wafers are processed, are among the factors which have been shown to contribute to the formation of defect sites on the completed wafers. Typically, the generation rate of these particles is influenced by the final treatment that the surfaces of these components receive prior to installation in the chamber, whether or not the components are new or recycled. Parameters affecting one such source of particulate contamination have been examined in the present studies.
Evaluation of Contact and Via Step Coverage Using a Novel Two-Step Titanium Nitride Barrier Deposition Process
Authors: Sidhwa Ardy , Spinner Chuck , Gandy Todd , Brown William , Ang Simon , Naseem Hameed , Ulrich Richard 
Published: February 2017

AbstractAluminum plug technologies are still used for many different semiconductor device applications and are cost-effective processes. However, there are some disadvantages associated with them. The key disadvantage is aluminum junction spiking caused by aluminum diffusing down into the silicon substrate and silicon diffusing up into the aluminum plug due to a poor titanium nitride (TiN) barrier [1]. The tungsten plug process is primarily used for 0.5mm and smaller technologies. Titanium nitride barrier material plays an important role as an underlayer for tungsten plugs to prevent tungsten hexafluoride (WF6) from attacking the titanium (Ti) film [2]. The role of the TiN barrier is to retard or prevent diffusion of the materials that the TiN layer separates [3]. In this work, the authors investigated the TiN barrier film properties with respect to nitrogen flows at two different power set points and argon gas flows. Different experiments were performed to understand the properties of the TiN film with respect to process variables. Single-step and dual-step TiN barrier processes were studied for contact and via step coverage profiles used for aluminum and tungsten plug technologies.
A New Ultra-Low K ILD Material Based On Organic-Inorganic Hybrid Resins
Authors: Zhong Ben , Meynen Herman , Iocopi Francesca , Weidner Ken , Mailhouitre Stephane , Moyer Eric , Bargeron Cory , Schalk Paul , Peck Alan , Hove Marleen Van , Maex Karen 
Published: February 2017

AbstractA ULK material based on a siloxane resin has been developed that can be processed using spin-coating and thermal cure to yield porous low-k films. The chemical bonds between the resin and porogen groups prevent the phase separation of the porogen from the resin during curing and lead to extremely small pores. The highly hydrophobic thin films made from this material displayed dielectric constant of 1.8, breakdown voltage of 4 MV/cm, a cohesive strength > 60 MPa, excellent crack resistance, and an average pore size of 2.2 nm by Positron Annihilation Lifetime Spectroscopy (PALS) and 2.5-3.0 nm by Ellipsometric Porosimetry (EP). In this paper, our strategy for designing low-k materials, the material properties and initial integration results for this new material will be discussed.
A New Approach of Thin-Film X-Ray Diffraction / Scattering Analysis for Ultra-Low-k Dielectrics with Periodic Pore Structures
Authors: Hata N. , Oku Y. , Yamada K. , Kikkawa T. 
Published: February 2017

AbstractWe propose and demonstrate experimentally a structural characterization technique for ultra-low-dielectric-constant thin films with periodic porous structures [1-3] by employing X-ray diffraction / scattering measurements. The analytical approach that we propose here takes into account specular reflection, incoherent scattering from random distribution of electron density, and coherent scattering from periodically modulated distribution of electron density. From the analysis, inter-pore distances and pore diameters in the directions perpendicular and parallel to the film surface are determined with which the film porosity is calculated. Thus obtained porosity is then used to discuss the film density and dielectric constant in comparison to those of non-porous reference sample.
Techniques for Localization of IC Interconnection Defects
Authors: Cole Edward I. 
Published: February 2017

AbstractThe advances in integrated circuit technology has made failure site localization extremely challenging. Charge-Induced Voltage Alteration (CIVA), Low Energy CIVA (LECIVA), Light-Induced Voltage Alteration (LIVA), Seebeck Effect Imaging (SEI) and Thermally-Induced Voltage Alteration (TIVA) are five recently developed failure analysis techniques which meet the challenge by rapidly and non-destructively localizing interconnection defects on ICs. The techniques take advantage of voltage fluctuations in a constant current power supply as an electron or photon beam is scanned across an IC. CIVA and LECIVA are scanning electron microscopy (SEM) techniques that yield rapid localization of open interconnections. LIVA is a scanning optical microscopy (SOM) method that yields quick identification of damaged semiconductor junctions and determines transistor logic states. SEI and TIVA are SOM techniques that rapidly localize open interconnections and shorts respectively. LIVA, SEI, and TIVA can be performed from the backside of ICs by using the proper photon wavelength. CIVA, LECIVA, LIVA, TIVA, and SEI techniques in terms of the physics of signal generation, data acquisition system required, and imaging results displaying the utility of each technique for localizing interconnection defects. In addition to the techniques listed above, the Resistive Contrast Imaging (RCI) for localizing opens on metal test patterns will be described as a starting point for the “IVA” technologies.
Plasma Enhanced Atomic Layer Deposition of ZrO2 Gate Dielectric
Authors: Koo Jaehyoung , Han Jiwoong , Choi Sungwoo , Park Chan Gyung , Kim Yangdo , Jeon Hyeongtag 
Published: February 2017

AbstractZirconium oxide (ZrO2) films were investigated as a potential replacement for silicon dioxide gate dielectric. ZrO2 films were deposited by both atomic layer deposition (ALD) and plasma enhanced ALD (PEALD) techniques using Zr t-butoxide and Zr(NEt2)4 as Zr precursors and oxygen as reactant gas. The XTEM images showed a randomly oriented polycrystalline structure of ZrO2 and amorphous characteristics of the interfacial layer. The calculated dielectric constant value of the ZrO2 films are about 10∼18 and these low values are believed due to the low dielectric constant interface layer. ZrO2 films deposited with oxygen plasma using Zr(NEt2)4 showed the leakage current of 3.12X10-9 A/cm2 at the gate bias voltage of -1.0 Volt with the equivalent oxide thickness value of 1.39 nm. ZrO2 films deposited with the oxygen plasma showed generally improved film quality with relatively low leakage current, small hysteresis and low carbon incorporation as well as the higher growth rate compared to the films deposited with the oxygen gas. Also, ZrO2 films deposited using Zr(NEt2)4 showed relatively improved film properties compared to the films deposited using Zr t-butoxide. This study demonstrated the possible application of PEALD technique for the high quality ZrO2 gate dielectric film deposition.
Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor
Authors: Conley J.F. , Ono Y. , Tweet D.J. , Zhuang W. , Solanki R. 
Published: February 2017

AbstractHfO2 films have been deposited using anhydrous hafnium nitrate (Hf(NO3)4) as a precursor for atomic layer chemical vapor deposition (ALCVD). These films have been characterized using x-ray diffraction, x-ray reflectivity, atomic force microscopy, current vs. voltage, and capacitance vs. voltage measurements. An advantage of this precursor is that it produces smooth and uniform initiation of film deposition on H-terminated silicon surfaces. As deposited films remained amorphous at temperatures below ∼700°C. The effective dielectric constant of the film (neglecting quantum effects) for films less than ∼15 nm thick, was in the range of kfilm ∼ 10-11, while the HfO2 layer value was estimated to be kHfO2 ∼ 12-14. The lower than expected dielectric constant of the film stack is due in part to the presence of an interfacial layer such as HfSiOx. Excess oxygen may play a role in the lower than expected dielectric constant of the HfO2 layer. Breakdown of HfO2 films occurred at ∼5-7 MV/cm. Leakage current was lower than that of SiO2 films of comparable equivalent thickness.
High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices
Authors: Ng K.L. , Zhan N. , Poon M.C. , Kok C.W. , Chan M. , Wong H. 
Published: February 2017

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.
Dielectric and Room Temperature Tunable Properties of Mg-Doped Ba0.96Ca0.04Ti0.84Zr0.16O3Thin Films on Pt/MgO
Authors: Kalkur T.S. , Yi Woo-Chul , Philofsky Elliott , Kammerdiner Lee 
Published: February 2017

AbstractMg- doped Ba0.96Ca0.04Ti0.84Zr0.16O3(BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structures of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 °C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm.
Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress
Authors: Lee Yi-Mu , Wu Yider , Hong Joon Goo , Lucovsky Gerald 
Published: February 2017

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2interface, and reduced gate-to-drain overlap region.
Composite X-ray Waveguide-Resonator as a Background for the New Generation of the Material Testing Equipment for Films on Si Substrates
Authors: Egorov V.K. , Egorov E.V. 
Published: February 2017

AbstractExperimental research of the first composite planar X-ray waveguide-resonator (CPXWR) is presented. Model for an X-ray beam penetration across CPXWR is proposed. The model shows that the experimental data can be interpreted as the effect of the X-ray beam angle tunneling across small gap between two waveguide-resonators aligned consecutive. The assumption been made that the effect may open the key for the mechanism understanding of a hard electromagnetic radiation beam's management. Possibilities of the CPXWR practical using for creation of the X-ray new generation equipment for testing of thin film coating on Si substrates are discussed.
Effects of Poly-Si Annealing on Gate Oxide Charging Damage in Poly-Si Gate Etching Process
Authors: Chong Daniel , Yoo Won Jong , Chan Lap , See Alex 
Published: February 2017

AbstractThe effects of the poly-Si annealing on gate oxide charging damage in the gate etching process were investigated. Our electrical test results show that gate oxide charging damage can be reduced if the poly-Si is not annealed prior to the gate etching process.
Degradation Study of Ultra-thin JVD Silicon Nitride Mnsfets
Authors: ManjulaRani K. N. , Rao V. Ramgopal , Vasi J. 
Published: February 2017

AbstractIn this paper we discuss a new method for measuring border trap density (Nbt) in sub-micron transistors using the hysteresis in drain current. We have used this method to measure Nbt in jet Vapour Deposited (JVD) Silcon Nitride transistors (MNSFETs). We have extended this method to measure the energy and spatial distribution of border traps in these devices. The transient drain current varies linearly with logarthmic time. This suggests that tunneling is the dominant charge exchange mechanism of border traps. The pre-stress energy distribution is uniform whereas poststress energy distribution shows a peak near the midgap.