bluuebunny/crossref_metadata_2025_split huggingface dataset:
Effect of 3-arylamino-1,2-dihydro-3H-1,4-benzodiazepine-2-ones on the bradykinin-induced smooth muscle contraction
Authors: Virych P. A. , Shelyuk O. V. , Kabanova T. A. , Khalimova O. I. , Martynyuk V. S. , Pavlovsky V. I. , Andronati S. A. 
Published: March 2017

Damage to tissue, inflammation and disruption of normal functioning of organs are often accompanied by pain. In pain perceptions, the kinin-kallikrein system with bradykinin as mediator is very important. Regulatory activity of the kinin-kallikrein system permits the control of inflammation, pain, vascular tone and other functions. A new group of substances that may used for this purpose are 3-substituted 1,4-benzdiazepinones. We analyzed the effect of 3-aryl amino-1,2-dihydro-3H-1,4-benzodiazepine-2-ones derivatives on the normalized maximal rate of bradykinin-induced smooth muscle contraction of the stomach in the presence of calcium channel blockers verapamil (1 μM) and gadolinium (300 μM). The levels of bradykinin and 3-arylamino-1,2-dihydro-3H-1,4-benzodiazepine-2-ones in the incubation solution were 10–6 M. Data processing on the dynamics of contraction was performed according to the method of T. Burdyha and S. Kosterin. Statistically significant changes were found for MX-1828. This compound reduced the maximal normalized rate of bradykinin-induced smooth muscle contraction in the presence of Gd3+ and verapamil by 19.3% and 32.0%, respectively. Also, MX-1828 demonstrated effects similar to those of the competitive inhibitor bradykinin B2-receptor – des-Arg9-bradykinin-acetate, which is possible evidence of its interaction with the receptor or signal transduction pathways. MX-1828 additionally reduced the maximum normalized rate of relaxation by 6.2% in the presence of Gd3+. This effect was demonstrated for MX-1906 in the presence of verapamil with additional reduction of the maximal normalized rate of relaxation, which was 26.4%. The results suggest the presence of inhibitory interaction between MX-1828 and kinin-kallikrein system receptors or signal transduction pathways. The effects which were found for MX-1906 require further studies to clarify the mechanisms of influence on bradykinin-induced smooth muscle contraction.
Ultrastructural changes in biofilm forms of staphylococci cultivated in a mixed culture with lactobacilli
Authors: Lavryk G. , Korniychuk O. , Tymkiv M. 
Published: March 2017

The capacity of opportunistic bacteria for biofilm formation plays an important role in the development of chronic inflammatory processes, which are difficult to treat. To improve antimicrobial therapy methods, the influence of lactobacilli on the ultrastructure of biofilm-forming clinical strains of staphylococci when co-cultured was investigated. 5 biofilm-forming clinical strains of S. aureus from the skin of acne vulgaris patients (n = 24) were isolated. Using transmission electron microscopy (TEM) the morphological changes of S. aureus cells in the mixed culture with standard strains of Lactobacillus plantarum 8P-A3 and clinical strains of L. fermentum (n = 4) were studied. It was found that in 48 hours after the inoculation on the medium of samples of mixed cultures of L. plantarum 8P-A3 and S. aureus growth of staphylococci was not revealed. Only in some cases of mixed cultures of L. fermentum and biofilm-forming staphylococci was growth of S. aureus obtained. In electron diffraction patterns of control samples of 24-hour staphylococcal monocultures and 48-hour lactobacilli monocultures, natural development of the population at the cellular level was observed. Destructive changes under the influence of lactobacilli (probiotic and clinical strains) were detected in all ultrathin sections of the cells of biofilm-forming and planktonic staphylococci. Significant destructive changes in the cell wall of the staphylococci were observed: thickening, obtaining of irregular form, detachment of the cytoplasmic membrane, the complete destruction of the peptidoglycan layer and the emergence of "shadow cells". On all electron diffraction patterns fibrillar-threadlike structures of DNA could not be observed, but in some cases mesosome-like formations were poorly contrasted. It was established that the surface S-layer of lactobacilli was expressed on a significantly larger scale in the mixed culture with staphylococci. In mixed culture of clinical strains of lactobacilli with biofilm form of S. aureus, staphylococcal cells could be found in a dormant state. Thanks to an experimental model of biofilm in a mixed culture, the development of destructive changes of staphylococci under the influence of the lactobacilli both on the morphological and at the population levels has been assessed. The results obtained can be used in improving the schemes of complex antimicrobial therapy of pyoinflammatory processes with the use of biological preparations, which are composed of lactobacilli, including those in the form of local application.
Internet gaming disorder: Inadequate diagnostic criteria wrapped in a constraining conceptual model
Authors: Starcevic Vladan 
Published: March 2017

Background and aims
The paper “Chaos and confusion in DSM-5 diagnosis of Internet Gaming Disorder: Issues, concerns, and recommendations for clarity in the field” by Kuss, Griffiths, and Pontes (in press) critically examines the DSM-5 diagnostic criteria for Internet gaming disorder (IGD) and addresses the issue of whether IGD should be reconceptualized as gaming disorder, regardless of whether video games are played online or offline. This commentary provides additional critical perspectives on the concept of IGD.

Methods
The focus of this commentary is on the addiction model on which the concept of IGD is based, the nature of the DSM-5 criteria for IGD, and the inclusion of withdrawal symptoms and tolerance as the diagnostic criteria for IGD.

Results
The addiction framework on which the DSM-5 concept of IGD is based is not without problems and represents only one of multiple theoretical approaches to problematic gaming. The polythetic, non-hierarchical DSM-5 diagnostic criteria for IGD make the concept of IGD unacceptably heterogeneous. There is no support for maintaining withdrawal symptoms and tolerance as the diagnostic criteria for IGD without their substantial revision.

Conclusions
The addiction model of IGD is constraining and does not contribute to a better understanding of the various patterns of problematic gaming. The corresponding diagnostic criteria need a thorough overhaul, which should be based on a model of problematic gaming that can accommodate its disparate aspects.
Switching Behavior in p-Type Hydrogenated Amorphous Silicon with One and Two Blocking Contacts
Authors: Hu Jian , Branz Howard M. , Crandall Richard S. , Ward Scott , Wang Qi 
Published: March 2017

AbstractWe compare switching behaviour in Cr/a-Si:H(p)/Ag and c-Si(p)/a-Si:H(p)/Ag structures containing p-type hydrogenated amorphous silicon. The a-Si:H layer is made by hot wire chemical vapor deposition. We observed that the switching is polarity-dependent only in the sample on c-Si(p). Switching to a low-resistance state occurs at 0.4 mA/cm2 when any of the metal contacts are biased positive. When the c-Si(p) is biased positive holes are injected and no switching occurs even up to 4 A/cm2. We suggest that the switching requires a blocking metal/a-Si(p), possibly because local electrical breakdown initiates metal filament formation.
Molecular Hydrogen in Amorphous Silicon
Authors: Leopold D. J. , Fedders P. A. , Norberg R. E. 
Published: March 2017

AbstractProton NMR studies on hydrogen in numerous plasma deposited a-Si:H thin film samples over many years have established that there are primarily two dipolar broadened lines, representing different distinct degrees of proton clustering involving most of the contained hydrogen. In addition, both of these configurations were thought to be hydrogen tightly bonded to silicon. However, deuteron magnetic resonance established long ago that a substantial fraction of the hydrogen (deuterium) population was a weakly bonded species, very different than the silicon bonded hydrogen typically seen in infrared measurements. Deuteron magnetic resonance can easily distinguish bond strength because deuterons have spin, an electric quadrupole moment, and are sensitive to electric field gradients. The much weaker deuteron dipolar coupling results in NMR line shapes and widths that are determined by distributions of electric field gradients and angular averages about the applied magnetic field direction. The primary features of the deuteron line shape are a sharp powder-pattern Pake doublet attributed to the tightly silicon bonded species and a broad central Gaussian component originally interpreted as a weakly bound component, but now recognized as molecular deuterium and HD trapped in the amorphous equivalent of T-sites. This latter result is confirmed by spin-echo double resonance experiments using 1H and 29Si nuclides, which reveal a very appreciable population of molecular hydrogen in T-like sites. NMR line shape subtractions also indicate that the majority of this species resides in the less-clustered hydrogen phase. Also a comparison of the T-site molecular hydrogen fraction with measured photoresponse, combined with light-induced changes in the DMR line shape, indicate that this species is in regions of a-Si:H that control the optoelectronic properties of the material.
Microscopic Model for Creation And Removal of Metastable Dangling Bonds in a-Si:H
Authors: Powell M.J. , Deane S.C. , Wehrspohn R.B. 
Published: March 2017

AbstractWe present a new microscopic model for metastable Si dangling bond defect creation in hydrogenated amorphous silicon, which is applicable to both light-induced and carrier-induced defect creation. The key feature of our model is that hydrogen is always in the tedrahedral-like site, which is strongly bound in amorphous silicon, and never in the bond-centered site. Breaking of Si-Si bonds and successive stabilisation by bond-switching of nearby hydrogen from doubly hydrogenated Si-Si bonds (SiHHSi) results in two hydrogen-stabilised dangling bonds (SiHD). Since hydrogen is in the Td site in all configurations, this defect creation reaction is consistent with ESR, NMR, hydrogenation experiments and the mechanical stress dependence of defect creation.
Nature of Charged Metastable Defects in Network Rebonding Model
Authors: Biswas R. , Pan B. C. 
Published: March 2017

AbstractWe recently developed an atomistic model of metastability of a-Si:H, where defect creation is driven by the breaking of weak silicon bonds. The kinetics of degradation in this model is simulated with coupled rate equations that show t1/3 kinetics of defect creation and saturation behavior similar to experiment. Saturated defect densities of neutral dangling bonds are accompanied by a much smaller density of negatively charged floating bonds and positively charged dangling bonds (D+). We propose a two-step annealing mechanism where the positively charged D+ dangling bonds are annealed at low temperature and the D0 at higher temperature -which accounts for hysteresis in mobility lifetime products.
Electrons and Phonons in amorphous Si: Deformation Potentials and Solutions of the Time Dependent Schrödinger Equation
Authors: Drabold D. A. , Li Jun 
Published: March 2017

AbstractWe employ first principles methods to explore the coupling between electrons and the lattice in amorphous silicon (a-Si). First we compute the adiabatic electronic response to phonon modes in a realistic model of a-Si. Then, we present a simulation of the electron dynamics of localized edge states in a-Si at room temperature by integrating the time dependent Schrödinger equation. We study the character of the spatial and spectral diffusion of the localized states and directly simulate and reveal the nature of thermally driven hopping. Phonon-induced resonant mixing leads to rapid electronic diffusion if states are available nearby in energy and real-space. We believe that many of the results we obtain are central to modeling transport involving localized states.
Effect of Filament Material on the Decomposition of SiH4 in Hot Wire CVD of Si-Based Films
Authors: Duan H. L. , Zaharias G. A. , Bent Stacey F. 
Published: March 2017

AbstractThe choice of filament material has an effect on the decomposition of silane during the hot wire chemical vapor deposition (HW-CVD) of amorphous and microcrystalline silicon films. The Si radicals produced from W, Re, Mo and Ta filament materials have been probed by laserbased single photon ionization (SPI) as a function of hot wire temperature. The Si radical profiles are shown to demonstrate two distinct regimes: a regime below 1600°C-1800°C (depending on filament material) limited by surface reaction at the filament in which Si concentration increases monotonically; and a mass transfer limited regime above 1600°C-1800°C where Si intensity saturates. The apparent activation energy of Si radical production in the surface reaction regime from Ta (140-170 kcal/mol) is found to be close to the corresponding Si thermal desorption energy from a Ta surface, suggesting that the Si production is controlled by the desorption process from the bare metal. On the other hand, the Si activation energies from W and Re (30-60 kcal/mol) are lower than the related desorption energies, suggesting that other rate limiting reactions play a role for these materials. The apparent activation energy for the Mo surface (60-90 kcal/mol) is intermediate between the other metal values. In addition to the Si radical study, corresponding film deposition is detected in situ by multiple internal reflection infrared (MIR-IR) spectroscopy. The IR measurements have been used to estimate the growth rate of a-Si:H deposited on a Ge substrate. The results show similar activation energies for both the growth rate and the Si formation from a W filament, implying that Si radical production and subsequent film growth may be dominated by the same elementary reactions within the decomposition and film growth processes at low pressure.
Fabrication and Characterization of Polycrystalline Silicon Thin Films by Reactive Thermal CVD with Si2H6 and F2
Authors: Lee J. W. , Shimizu K. , Hanna J. 
Published: March 2017

AbstractLow-temperature growth of polycrystalline Silicon thin films has been investigated to fabricate thin film transistors by a new thermal CVD with the reactive source gases, Si2H6 and F2, resulting in the film growth at a low-temperature less than 500°C. In order to establish the optimal condition, gas pressure, total gas flow rate of Si2H6+F2 and He as a carrier gas, and residence time, τ, were tuned. Deposition rates and film crystallinity were influenced by the gas flow rations. The growth rate was 3.2-4.2[nm/min] and film uniformity was within ±6.5% over 4cm2 area. High crystallinity films showed a sharp peak at 520[cm-1] in Raman spectra whose full width at half maximum was 6-8[cm-1]. The high crystallinity even at the early stage of film growth was confirmed by transmission electron microscopy. The conductivity and activation energy is on the order of 10-5-10-6 [S/cm] and 0.53[eV], respectively, after hydrogenation. We fabricated poly-Si bottom-gate TFT that have field effect mobility as high as 32.3cm2/Vs and on/off current ratio of 104.
Defects in Microcrystalline Silicon Prepared With Hot Wire CVD
Authors: Finger F. , Klein S. , Dylla T. , Baia Neto A. L. , Vetterl O. , Carius R. 
Published: March 2017

AbstractThe influence of the preparation conditions in hot wire chemical vapour deposition (HWCVD) on the electronic properties of microcrystalline silicon is investigated in view of application of the material in thin film solar cells. Poor grain boundary passivation, as a result of hydrogen etching at strong hydrogen dilution of the process gas or thermal desorption of hydrogen at high deposition temperatures, is considered a main obstacle for material optimisation. We conclude that optimum μc-Si:H solar cell material, both from HW-CVD and from plasma enhanced CVD, is not necessarily obtained with largest grain sizes and apparent highest crystalline content, but rather by a material prepared under conditions which yield a compact morphology with an effective grain boundary passivation.
Large-Grain Polysilicon Films with Low Intragranular Defect Density by Low-Temperature Solid-Phase Crystallization
Authors: Bo Xiang-Zheng , Yao Nan , Sturm J. C. 
Published: March 2017

AbstractSolid phase crystallization (SPC) of a-Si: H at 600°C was investigated by transmission electron microscopy (TEM) and Raman spectroscopy in a cantilever structure, where the underlying SiO2 was removed prior to the crystallization. The absence of the underlying oxide leads to both a higher grain size and a lower intragranular defect density. The grain size increases from 0.6 μm in regions with the underlying oxide to 3.0 μm without the underlying oxide, and the intragranular defect density decreases one order of magnitude from ∼ 1011 cm-2 to ∼ 1010 cm-2. The improvements in material quality without the lower a-Si/SiO2 interface are thought to be due to a lower nucleation rate and a lower tensile stress with an easier silicon atomic rearrangement at the lower silicon interface.
Optical properties of Microcrystalline Silicon determined by Spectroscopic Ellipsometry and Photothermal Deflection Spectroscopy
Authors: Jun Kyung Hoon , Stiebig Helmut , Carius Reinhard 
Published: March 2017

AbstractThe effect of the microstructure and bonded hydrogen on the optical properties of microcrystalline films (μc-Si:H) was investigated by Spectroscopic Ellipsometry (SE) and Photothermal Deflection Spectroscopy (PDS). On samples with a high crystalline volume fraction we studied the reason for a large deviation of absorption coefficient in the energy range between 1.6 eV and 3.2 eV from the value predicted by effective medium theory. This enhancement can be attributed to scattering by the inhomogeneity of μc-Si:H, which is investigated by the introduction of the dense medium radiative transfer formalism to an optical scattering simulation. Further, we suggest strain as a reason for the enhanced absorption in highly crystalline μc-Si:H.
Characterization of Microcrystalline Transition from Amorphous Silicon as a Function of Hydrogen Dilution and Substrate Temperature of Hot-wire CVD
Authors: Wang Keda , Zhang Haoyue , Zhang Jian , Owens Jessica M. , Weinberg-Wolf Jennifer , Han Daxing , Gedvilas Lynn , Nelson Brent 
Published: March 2017

Abstracta-Si:H films were prepared by hot wire chemical vapor deposition. One group was deposited at a substrate temperature of Ts=250°C with varied hydrogen-dilution ratio, 0<R<10; the other group was deposited with fixed R=3 but a varied Ts from 150 to 550°C. IR, Raman and PL spectra were studied. The Raman results indicate that there is a threshold value for the microstructure transition from a- to μc-Si. The threshold is found to be R ≈ 2 at Ts = 250°C and Ts ≈ 200°C at R=3. The IR absorption of Si-H at 640 cm-1 was used to calculate the hydrogen content, CH. CH decreased monotonically when either R or Ts increased. The Si-H stretching mode contains two peaks at 2000 and 2090 cm-1. The ratio of the integral absorption peaks I2090/(I2090+I2090) showed a sudden increase at the threshold of microcrystallinity. At the same threshold, the PL features also indicate a sudden change from a- to μc-Si., i.e. the low energy PL band becomes dominant and the PL total intensity decreases. We attribute the above IR and PL changes to the contribution of microcrystallinity, especially the c-Si gain-boundaries.
Effects of Deposition Temperature and Film Thickness on the Structural, Electrical, and Optical Properties of Germanium Thin Films
Authors: Jordan William B. , Wagner Sigurd 
Published: March 2017

AbstractGermanium films deposited on glass by plasma-enhanced chemical vapor deposition from germane and hydrogen grow in the structure succession of amorphous-nanocrystallineamorphous-nanocrystalline as the substrate temperature is raised from 30°C to 310°C. We ascribe the phase formation, from low to high temperature, to a sequence of low to high mobility of Ge growth species on a surface that is hydrogenated at low temperature but not hydrogenated at high temperature. We report some structural, optical, and electrical transport properties of Ge films as a function of deposition temperature and film thickness.
Properties of amorphous silicon-germanium films and devices deposited at higher growth rates
Authors: Liu Yong , Dalal Vikram L. 
Published: March 2017

AbstractWe report on the growth and properties of amorphous Silicon-Germanium [a–(Si,Ge):H] films and devices fabricated at growth rates of ∼ 5 Å/sec using a remote ECR plasma growth process. The films and devices were made using mixtures of germane and silane along with dilution with hydrogen and helium. The addition of He to the gas mixture significantly increased the growth rates. It was found that hydrogen was always necessary in order to achieve the best film and device properties. Films and devices were made across the entire bandgap range, from a-Si to a-Ge. High ratios of photo/dark conductivity and low values of Urbach energy ( > 50 meV) indicate good film properties. The defect densities were measured using space charge limited current techniques. The defect densities were in the range of 1-2 x 10 16/cm 3 –eV, about 5 times higher than for a-Si:H. Electron mobility-lifetime products were measured and found to be in the range of 2-4 x 10-7 cm2/V, even for low gap materials (1.35 eV). Single and graded gap devices were fabricated in these materials. Device fill factors of ∼ 70% were obtained in graded gap devices.
Expanding Thermal Plasma Deposition of Silicon Dioxide-Like Films for Microelectronic Devices
Authors: Creatore M. , van Hest M.F.A.M. , Benedikt J. , van de Sanden M.C.M. 
Published: March 2017

AbstractIn this paper we report on the use of the expanding thermal plasma (ETP) technique for the deposition of carbon-free SiO2 films by means of hexamethyldisiloxane (HMDSO)/oxygen mixtures, at a growth rate of 8-10 nm/s. Information concerning the film chemical properties and refractive index/growth rate have been obtained by means of FTIR measurements and in situ single wavelength ellipsometry, respectively. Because of its geometry, the ETP configuration has proven its suitability for studies concerning the fragmentation paths of the HMDSO molecule and the reactions occurring in the plasma phase. In this framework, very recent results obtained by coupling the SiO2 film-deposition set up with a very sensitive, high spectral resolution- absorption technique, Cavity Ring Down Spectroscopy, are presented.
Monte-Carlo Simulation of Generation- Recombination Noise in Amorphous Semiconductors
Authors: Badran R.I. , Main C. , Reynolds S. 
Published: March 2017

AbstractWe compare the predictions of several analytical models for conductivity fluctuations in a homogeneous semiconductor containing discrete and distributed traps, using a Monte-Carlo simulation of the relevant multi – trapping (MT) transitions. The simulation directly embodies the statistical features associated with such processes, in a simple ‘model - independent’ approach, free of approximations and assumptions. We compare the results with those of several analytical approaches. In one, the noise spectrum is assumed to reflect separately, the characteristic individual release time constants of the various trapping centers in the material. In another, the trapping time into the ensemble of electron traps is taken to be the dominant time constant, and hence, in a material such as a-Si:H, where the trapping time into tail sates is of order 1ps, this is taken to imply that this component of the conductivity noise spectrum is unobservable in practice. Our own analytical approach, incorporates coupling (albeit weak) between traps, which necessarily communicate via the extended states. Preliminary results of the simulation support our thesis, and verify that the same information is contained in the real part of the modulated photoconductivity (MPC) spectrum. A ‘full Monte’ – Carlo simulation incorporating all gap states and spatial inhomogeneities is now a priority.