bluuebunny/crossref_metadata_2025_split huggingface dataset:
Control of a Metal-Electrode Work Function by Solid-State Diffusion of Nitrogen
Authors: Lander R.J.P. , Hooker J.C. , Zijl J.P. van , Roozeboom F. , Maas M.P.M. , Tamminga Y. , Wolter R.A.M. 
Published: February 2017

AbstractThe work function of a metal gate electrode has been adjusted with the introduction of nitrogen by solid-source diffusion from an over-stoichiometric TiN1+x layer. RBS measurements have shown that measurable concentrations of nitrogen can be diffused into a 10nm Ta layer at moderate anneal temperatures (>500°C), and that this concentration increases with temperature in the range 500-1000°C. Capacitance-voltage measurements have been carried out on 10nm tantalum layers on Al2O3. These measurements have indicated that the work function of tantalum changes by -0.08eV due to the presence of the over-stoichiometric TiN1+x covering layer during anneal (800°C/30”). Similar C-V measurements have been carried out on 10nm molybdenum layers on SiO2 and on Al2O3 dielectrics. These have shown that the work function of molybdenum is substantially different for metal stacks with the TiN1+x covering layer after a similar anneal. The work function changes by -0.52eV for molybdenum on SiO2 and by -1.1eV for molybdenum on Al2O3. The results suggest great potential for molybdenum as a candidate for a single-metal dual-work function approach to integrating metal gates into future CMOS technologies.
Sr/Si Template Formation for the Epitaxial Growth of SrTiO3 on Silicon
Authors: Hu Xiaoming , Liang Y. , Wei Yi , Edwards J.L. , Droopad R. , Moore K. , Ooms W.J. 
Published: February 2017

AbstractA novel silicon cleaning process using strontium metal thin films has been described. The silicon dioxide de-oxidation process using strontium as catalysts has been studied by X-ray Photoelectron Spectroscopy (XPS) and other in-situ techniques. A Sr/Si template for the epitaxial growth of SrTiO3 single crystals on silicon can be directly formed as a result of the above Sr-de-oxidation process. The de-oxidation mechanism can be explained after solving the interfacial structures of the Sr/SiO2/Si system with in-situ XPS.
Investigation of Light Initiated Oxidation of Hydrogen Passivated Silicon Surfaces: Hx-Si(100) and H-Si(111)(1X1)
Authors: Morse Kathleen A. , Pianetta Piero 
Published: February 2017

AbstractThere are factors present in cleanroom air that may lead to contamination prior to processing. These factors need to be better understood in order to meet tomorrow's requirement for atomically clean surfaces prior to gate oxidation. This paper identifies the conditions that initiate room temperature oxidation of fluoride prepared hydrogen passivated silicon surfaces by using X-ray Photoelectron Spectroscopy (XPS). Possible oxidation factors investigated include lighting conditions and ambient gases. Both Hx-Si(100) and H-Si(111)(1X1) surfaces do not oxidize in dark conditions and in 450nm wavelength lighting conditions for both humid and dry air ambients. These surfaces do oxidize in dry air and humid air when the surface is exposed to shorter wavelengths of light. Wavelength dependence for oxidation on both surfaces is confirmed. In addition, the level of oxidation observed depends on the surface orientation in humid air but not in dry air.
Development of Spin-on Pre Metal Dielectrics (PMD) for 0.10UM Design Rule and Beyond
Authors: Li Zhongtao , Zhou Xiaobing , Wyman Dave , Spaulding Mike , Kim Ginam , Grigoras Stelian , Choi DK , Moyer Eric 
Published: February 2017

AbstractSpin-on pre metal dielectric (PMD) materials are being developed for memory and logic devices at 0.10 um design rules and beyond. The stringent design rules require a PMD material with a low thermal budget, excellent gap fill capability, and etch resistance similar to that of a thermal oxide. Spin-on PMD is being developed to meet these requirements as current PMD technologies of HDP CVD and BPSG reflow are constrained by void formation or high thermal budget requirement. One common challenge that faces spin-on PMD is inhomogeneous densification, or “corner etch”. In this paper EELS-STEM, FTIR, SEM and HF wet etching were used to study the mechanism of this phenomenon. This information provides a possible route for the development of spin-on PMD resins.
Strength-porosity relationship of nanoporous MSSQ films characterised by Brillouin Light Scattering and Surface Acoustic Wave Spectroscopy
Authors: Flannery C.M. , Wittkowski T. , Jung K. , Hillebrands B. , Baklanov M.R. 
Published: February 2017

AbstractNanoporous Methylsilsesquioxane films are a leading candidate for low dielectric constant (low-κ) materials for microelectronic interconnect. Mechanical strength reduces rapidly with lower κ (increasing porosity) however, and there is a lack of techniques to characterize these properties in the κ∼2 range. This work reports application of surface acoustic wave spectroscopy and Brillouin light scattering to characterization of density/porosity and Young's modulus values of a range of Methylsilsesquioxane films from different manufacturers. We show that the results are validated by independent measurements and that nanoindentation measurements consistently overestimate stiffness. The behaviour of 3 sets of films show different stiffness-porosity relationships, the initially stiffer materials declining more rapidly with increasing porosity than the softer materials. This has important consequences for stiffness properties in the κ<2 region.
Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control
Authors: Amada Takaaki , Maeda Nobuhide , Shibahara Kentaro 
Published: February 2017

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.
Electrically Induced Junction MOSFET for High Performance Sub-50nm CMOS Technology
Authors: Dixit Abhisek , Dusane Rajiv O. , Rao V. Ramgopal 
Published: February 2017

AbstractDegrading of short-channel effects (SCE) e.g. Drain-Induced-Barrier-Lowering (DIBL), charge-sharing etc., as CMOS devices are scaled into the sub-50nm regime, is a major roadblock for ULSI technologies. This problem can be circumvented to some extent by a proper scaling of MOSFET vertical dimensions (junction depths, oxide thickness etc.). In this work we propose a novel implementation of an electrically induced junction (EJ) MOSFET. An EJ-MOSFET is different from conventional CMOS device in that the gate voltage electrically induces the shallow source-drain extensions (SDEs). In such a device the SDEs are underneath the gate and contain low-doped regions of opposite conductivity as that of deep source-drain (S/D). In order to turn ON the device, a voltage is applied at the gate of EJ-MOSFET device, such that these low doped regions below poly-Si gate get inverted and serve as SDEs. Consequently, the effective channel length in this condition is the distance between these low-doped regions. On the contrary, at any gate voltage less than that required for inverting these regions, no SDEs are induced, and the effective channel length is equal to the physical separation between the deep S/D junctions.
Silicon Surface Chemical Treatments in Oxide/Nitride Dielectric Stack Properties
Authors: Jacques D. , Petitdidier S. , Regolini J.L. , Barla K. 
Published: February 2017

AbstractOxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on <Si>. However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.
Diffusion Studies of Cu in Si and Low-k Dielectric Materials
Authors: Prasad K. , Yuan X.L. , Tan C.M. , Zhang D.H. , Li C.Y. , Wang S.R. , Yuan S.Y.J. , Xie J.L. , Gui D. , Foo P.D. 
Published: February 2017

AbstractExperimental results are presented on the diffusion of Cu in silicon and Black Diamond¶ (BD). Cu coated silicon samples, with and without the BD layer, are annealed at various temperatures and times. It is concluded that Cu diffusion in silicon is inhibited in the presence of a copper silicide formed during annealing and/or low solubility at temperatures less than 400°C. On the other hand, the incorporation of Cu in the BD film is observed to be strongly dependant on the method of deposition of the Cu layer. It is further concluded, based on device reliability data, that intentional backside Cu contamination does not pose serious device reliability problems even when subjected to annealing at temperatures typically used for backend processing.
Single Crystal TaN Thin Films on TiN/Si Heterostructure
Authors: Wang H. , Tiwari Ashutosh , Zhang X. , Kvit A. , Narayan J. 
Published: February 2017

AbstractWe have successfully grown epitaxial cubic (B1-NaCl structure) tantalum nitride films on Si (100) and (111) substrate using a pulsed laser deposition technique. A thin layer of titanium nitride was used as a buffer medium. We characterized these films using X-ray diffraction, high resolution transmission electron microscopy and scanning transmission electron microscopy (Zcontrast). X-ray diffraction and high-resolution transmission electron microscopy confirmed the single crystalline nature of these films with cubic-on-cubic epitaxy. The epitaxial relations follow TaN(100)//TiN(100)//Si(100) on Si(100) and TaN(111)//TiN(111)//Si(111) on Si(111). We observed sharp interfaces of TaN/TiN and TiN/Si without any indication of interfacial reaction. Rutherford backscattering experiments showed these films to be slightly nitrogen deficient (TaN0.95). High precision electrical resistivity measurements showed excellent metallic nature of these films. We also tried to deposit TaN directly on silicon, the films were found to be polycrystalline. In our method, TiN plays a key role in facilitating the epitaxial growth of TaN. This method exploits the concept of lattice matching epitaxy between TaN and TiN and domain matching epitaxy between TiN and Si. We studied the diffusion barrier properties of these films by growing a thin layer of copper on the top and subsequently annealing the films at 500°C and 600°C in vacuum. Cu diffusion layer was about 2nm after 600°C annealing for 30min. This work explores a promising way to grow high quality TaN diffusion barrier on silicon for copper interconnection.
Microstructural Evolution Of The Initial Phase Formation Of Cobalt Silicide With An Ultra-Thin Titanium Layer
Authors: Johnson Kevin D. , Sim Kian Sin , Chang Huicheng , Tsai Julie , Ma Zhiyong 
Published: February 2017

AbstractInserting a titanium layer between cobalt and silicon can control the phase formation sequence for cobalt silicide. In this study we show that sputtered Ti combines with surface oxide to form a stable permeable membrane <20Å thick. Below 500°C, the restricted diffusion of Co and Si through this interlayer allows Co2Si and CoSi2 to form above and below the interlayer, respectively. Because the interlayer is very thin, the type of substrate doping dominates the reaction sequence at higher temperatures. Given sufficient cobalt supply, at 500-600°C the initial phases transform to CoSi for an n-type Si substrate. For a p-type substrate the Co2Si phase converts to CoSi while the bottom CoSi2 phase remains stable. Above 650°C, the deposited cobalt fully converts to the final CoSi2 phase.
Albumin, prealbumin and CRP levels can be used to predict prognosis in gastric cancer
Authors: Rao T. Uma Maheswara , Phanikumar Venkat Hanuman , Kumar Hemanth 
Published: February 2017

Background: malnutrition and systemic inflammatory response in cancers result in a shorter survival rate, reduced treatment response and a higher rate of complications associated with therapy. Prealbumin, albumin and CRP Levels has utility as a prognostic indicator of cancer survival in cancer. The objective of this study was to albumin, pre-albumin and CRP levels of the patients who underwent surgery for gastric cancer were prospectively recorded and retrospectively evaluated.Methods: Study was done for period of 1 year in patients underwent surgery for gastric cancer. Details noted from records are as age, gender, duration of hospital stay, TNM stage, and preoperative albumin, pre-albumin and CRP levels.Results: A total number of 44 patients, 32 (72.7%) men and 12 (27.7%) women, were included in the study. The mean age was 64.1 (43-89) years. The mean duration of hospital stay was 12.8 (4-46) days. Preoperative albumin levels were below the expected range in 16 (41%) of 44 patients. Mean age of the patients with normal and decreased albumin levels was 62.7±12.8 and 65.3±12.3 years, respectively; albumin levels were insignificantly associated with the age (p = 0.54). When these 16 cases were evaluated in terms of disease stage-3 had 11(68.7%). Preoperative pre-albumin levels were decreased in 23 (53%) of 44 cases. Among the cases with decreased pre-albumin levels, stage 1 and 3 had 5 (21.7%) cases. There was a significant correlation between the TNM stage and pre-albumin levels (P = 0.014). CRP levels were elevated in 19 (43.2%) of 44 cases with CRP. Among these Stage-3 had 8 cases, 4 (42.1%). There was no significant correlation between disease stage, presence of metastatic lymph nodes and albumin levels (p>0.05).Conclusions: Preoperative albumin, pre-albumin and CRP levels can be useful to predict prognosis of patients with gastric cancer.
The Role of Bakau Snail, Telescopium telescopium L., as Biofilter in Waste Water Management of Intensive Shrimp Culture
Authors: Hamsiah , , Djokosetiyanto Daniel , Adiwilaga E. M. , Nirmala Kukuh 
Published: February 2017

<p>ABSTRACT</p><p>The objective the experiment is to know the role of bakau snail, <em>Telescopium telescopium </em>L.,<strong> </strong>as biofilter for improving waste water quality in shrimp culture. The experiment was carried out at laboratory scale. The parameters that observed in this experiment are physical, chemical and biological of waste water. Growth and survival rate of snail were also observed. Waste water quality measurement was carried out during a week, while the growth and survival rate were measured during two months. The aquarium of 30x40x40 cm were filled with 30 l of waste water from intensive shrimp culture. Bakau snail were stocked to the aquarium with density of 0 (control), 6, 9 and 12 snail/aquarium, and these treatment were replicated 3 times. The result shown that total organic matter (TOM), total ammonia, dissolved oxygen (DO) of waste water, and growth and survival rate of snail were not different between treatment of stocking density, while the biological oxygen demand (BOD), total suspended solid (TSS), nitrite and nitrate were significantly different (p</p><p>Key words : Bakau snail, <em>Telescopium telescopium </em>L., biofilter, shrimp culture waste water.</p><p> </p><p>ABSTRAK</p><p>Percobaan ini bertujuan untuk mengkaji peranan keong bakau, <em>Telescopium telescopium </em>L.,<strong> </strong>sebagai biofilter terhadap perbaikan mutu air limbah budidaya tambak udang intesif. Pertumbuhan dan kelangsungan hidup keong bakau juga dikaji. Percobaan dilakukan dalam skala laboratorium. Pengamatan kualitas air fisika, kimia dan biologi air limbah budidaya tambak dilakukan selama seminggu, sedangkan pertumbuhan keong dilakukan selama 2 bulan. Wadah percobaan yang digunakan adalah akuarium ukuran 30x40x40 cm dan diisi air sebanyak 30 liter yang berasal dari buangan budidaya udang intensif di tambak. Perlakuan percoban berupa padat tebar keong bakau dalam akuarium yaitu: 0 (tanpa keong), 6, 9 dan 13 ekor/akuarium, dan setiap perlakuan diulang 3 kali. Hasil percobaan menunjukkan bahwa respon peubah kadar bahan organik total (TOM), amoniak total, oksigen terlarut (DO) dalam air limbah, serta pertumbuhan dan kelangsungan hidup keong bakau tidak berbeda antar perlakuan kepadatan, sedangkan BOD<sub>5</sub>, padatan tersuspensi total (TSS), nitrit dan nitrat berbeda nyata (p</p><p>Kata kunci : Keong bakau, <em>Telescopium telescopium </em>L., biofilter, air limbah budidaya udang.</p>
The Effect of Dietary Vitamin E (-Tocopherol) Level on the Lipid, Essensial Fatty Acid Level and the Hatching Rate of Catfish, Clarias batrachus Linn.
Authors: Mokoginta I. , Syahrizal , , Jr. M. Zairin 
Published: February 2017

<p class="MsoNormal" style="text-align: justify;"><span lang="in" xml:lang="in">This experiment was conducted to evaluate the dietary level of vitamin E (</span><em><span lang="in" xml:lang="in">a</span></em><em><span lang="in" xml:lang="in">-tocopherol</span></em><span lang="in" xml:lang="in">) on the lipid, essential fatty acid level and the hatching rate of catfish, <em>Clarias batrachus</em> Linn. Five experimental diets with isoenergy and isonitrogen, but different vitamin E (</span><em><span lang="in" xml:lang="in">a</span></em><em><span lang="in" xml:lang="in">-tocopherol</span></em><span lang="in" xml:lang="in">) level were used in this experiment. Dietary vitamin E levels are 18, 114, 210, 308 and 416 mg/kg diet respectively.<span> </span>Fish with body weight of 18,55 </span><span lang="in" xml:lang="in">a</span><span lang="in" xml:lang="in"> 5,11 g per fish, fed on the experimental diets at satiation, for six months.<span> </span>The vitamin E, the lipid and the n-6 and n-3 fatty acid level of egg increase as the dietary vitamin E level of broodstock diet increase. However, the ratio of n-6/n-3 fatty acid of egg produced<span> </span>by treatment 210 mg vitamin E/kg diet was higher than that of other treatments, which finally produced the highest hatching rate of egg (p&lt;0,05).</span></p><p class="MsoNormal" style="text-align: justify; line-height: 150%;"><span lang="in" xml:lang="in">Key words : Vitamin E (</span><em><span lang="in" xml:lang="in">a</span></em><em><span lang="in" xml:lang="in">-tocopherol</span></em><span lang="in" xml:lang="in">), reproduction, catfish (<em>Clarias batrachus</em> Linn.)</span></p>
Experiencias de los adultos mayores en la práctica del Tai Chi Qi Gong. Tumbes, Perú.
Authors: Melgar Morán Carlos Christian 
Published: February 2017

El tai-chi qi gong es una combinación de ejercicio físico y técnicas de relajación, utilizado para mejorar la salud física y mental de sus practicantes. Objetivos: develar y analizar comprehensivamente las experiencias de los adultos mayores en la práctica del tai chi qi gong en una posta médica de EsSalud, Tumbes–Perú. Material y métodos:investigación cualitativa, desarrollada bajo el enfoque acción participación. Los sujetos de investigación fueron los adultos mayores que asisten al Programa del Adulto Mayor. La información fue recogida mediante entrevistas a profundidad considerando en todo momento los principios éticos del Informe de Belmont; el tamaño de la muestra se determinó por el método de saturación; obteniéndose siete discursos representativos, el tratamiento de los datos fue mediante el método de análisis de contenido. Resultados: I. Tai chi qi gong: una experiencia positiva. II. Experimentado los beneficios del tai chi con las siguientes sub categorías disminuyendo dolencias corporales, aumentado la agilidad corporal, mejorando el estado de ánimo, liberando tensiones mentales. III. Practicando los ejercicios del tai chi en casa. Conclusiones: la práctica del tai chi qi gong tiene consecuencias muy favorables para la salud de los adultos mayores porque permite desarrollar en gran manera el sentido de equilibrio, con un importante mejoramiento de su condición física, funcional y emocional y un claro aumento del nivel de calidad de vida.
Relación entre el funcionamiento familiar y la capacidad de afrontamiento y adaptación de la familia con un niño con problema neurológico crónico del Servicio de Neuropediatría del Instituto Nacional de Salud del Niño. Lima - Perú.
Authors: Ochoa-Villacorta Silvia Gisella , Villaizan-Paliza Katerine Milagros , Tam-Phun Elena , Gutiérrez-Montes Pedro Antonio 
Published: February 2017

Objetivos: determinar la relación del funcionamiento familiar y la capacidad de afrontamiento y adaptación de la familia con un niño con problema neurológico crónico. Material y Métodos: estudio descriptivo correlacional de corte transversal. La recolección de datos se realizó en los meses de marzo a mayo del 2015, en 29 familiares, a quienes seles entrevistó y aplicó el cuestionario, previa firma del consentimiento informado, en un servicio de hospitalización de neuropediatría. Se realizó la validación del instrumento a través de juicio de expertos y prueba piloto obteniendo una confiabilidad de 0,771 de alfa de Crombach. Los datos obtenidos fueron calificados en una base diseñada en el programa Excel, luego se realizó el análisis para ver la relación entre las variables mediante Rho de Spearman en el programa SPSS versión 22. Los resultados se presentan en tablas estadísticas. Resultados: el tipo familiar con mayor porcentaje fue el extremo y de rango medio, con un 48,3%. La capacidad de afrontamiento y adaptación en mayor porcentaje fue la de mediano rango 55,2%; y alta, 20,7%. Conclusiones: el funcionamiento familiar tiene tendencia a la disfuncionalidad en la familia con un niño con enfermedad neurológica crónica y presenta mediana capacidad de afrontamiento y adaptación con propensión a la baja, no se encontró relación estadística significativa.
Vivencias de ser padre en estudiantes de una Universidad Pública en Jaén - Cajamarca - Perú.
Authors: Díaz Rivadeneira Insolina Raquel , Bringas Abanto Doris Elizabeth 
Published: February 2017

Objetivos: analizar comprehensivamente las vivencias de ser padre, en estudiantes de una Universidad Pública de Jaén-Cajamarca. Material y métodos: método fenomenológico. Muestra conformada por diez participantes adultos jóvenes utilizando la técnica de saturación.La recolección de la información se realizó mediante la entrevistasemiestructurada en profundidad. Considerando el consentimiento informado y respetando la confidencialidad y veracidad de los datos. Procesamiento de la información mediante la técnica del análisis temático según Bardin: Pre análisis, transcripción, elección de unidades, codificación y asignación de categorías. Resultados: selección de dos categorías. La primera “inestabilidad emocional”, con tres subcategorías: miedo a perder el apoyo de sus padres para seguir estudiando, angustia ante la reacción de la familia y los amigos y afecto ante el nacimiento de su hijo. La segunda categoría “adaptación a su realidad” dividida en dos subcategorías: postergación de sus proyectos de vida y madurez. Conclusiones: el estudiante, atraviesa todo un proceso emocional y finalmente adopta una posición de responsabilidad, de continuación de sus proyectos pendientes y el reconocimiento del padre hacia el hijo; expresiones afectivas encontradas en el estudio. Vivencias referidas por los participantes ante el nacimiento de un hijo.