bluuebunny/crossref_metadata_2025_split huggingface dataset:
The interplay between chasing behavior, time perspective, and gambling severity: An experimental study
Authors: Ciccarelli Maria , Cosenza Marina , Griffiths Mark D. , D’Olimpio Francesca , Nigro Giovanna 
Published: June 2019

Background and aims
Chasing refers to continued gambling in an attempt to recoup previous losses and is one of the diagnostic criteria for gambling disorder. However, research on the topic is still in its infancy. This study investigated whether chasing behavior mediates the relationship between time perspective and gambling severity.

Methods
Non-problem gamblers (N = 26) and problem gamblers (N = 66) with the same demographic features (age and gender) were compared on the Consideration of Future Consequences and a computerized task assessing chasing. The Italian South Oaks Gambling Screen was used to discriminate participants in terms of gambling severity.

Results
Significant correlations were found relating to gambling severity, chasing, and time perspective. More specifically, the results showed that problem gamblers reported more chasing and a foreshortened time horizon. Chasers, compared to non-chasers, were found to be more oriented to the present. Regression analysis showed that male gender, present-oriented time perspective, and chasing were good predictors of gambling severity. Finally, to clarify if present orientation was on the path from chasing to gambling severity or if chasing was the mediator of the impact of present orientation on gambling severity, a path analysis was performed. The results indicated that present orientation had a direct effect on gambling severity and mediated the relationship between chasing and gambling involvement.

Conclusion
The findings support the exacerbating role of chasing in gambling disorder and for the first time show the relationship of time perspective, chasing, and gambling severity among adults.
Magnetography: A novel Characterization Tool for Li-Ion-Batteries
Authors: Bergholz Timm , Nuñez Theodor , Wackerl Jürgen , Korte Carsten , Stolten Detlef 
Published: June 2019

ABSTRACTThe application of magnetography as a novel method to determine the state of charge (SoC) of commercial Li-ion Batteries is reported. The method is non-invasive and nondestructive and suitable to be applied during normal operation. It is based on spatially resolved measurement of the magnetic field B, induced by the changing current flow during cycling. A standardized measurement setup and procedure for conventional AMR-sensors has been developed, offering high reproducibility (∼0.1%) and the chance to characterize the different spatial components of the magnetic field (Bx, By, Bz). The percentage deviation of the B-distributions for different SoCs for a given current load reveals significant differences. A change of B of up to 20% between SoCs of 90% and 10% is found. The influence of current density at different SoC reveals a constant magnetic susceptibility χ at low SoC and a field dependent χ at high SoC. Both effects are attributed to the change of the magnetic properties upon varying the amount of intercalated lithium in the transition metal (LixNi1/3Co1/3Mn1/3O2) based intercalation cathode. The method can be used to provide an additional parameter for SoCestimation to battery management systems.
High Resolution Mapping of Cytoskeletal Dynamics in Neurons via Combined Atomic Force Microscopy and Fluorescence Microscopy
Authors: Spedden Elise , Kaplan David L. , Staii Cristian 
Published: June 2019

ABSTRACTLiving neuronal cells present active mechanical structures which evolve with cellular growth and changes in the cell microenvironment. Detailed knowledge of various mechanical parameters such as cell stiffness or adhesion forces and traction stresses generated during axonal extension is essential for understanding the mechanisms that control neuronal growth, development and repair. Here we present a combined Atomic Force Microscopy (AFM)/Fluorescence Microscopy approach for obtaining systematic, high-resolution elasticity and fluorescent maps for live neuronal cells. This approach allows us to simultaneously image and apply controllable forces to neurons, and also to monitor the real time dynamics of the cell cytoskeleton. We measure how the stiffness of neurons changes both during axonal growth and upon chemical modification of the cell, and identify the cytoskeletal components most responsible for the changes in cellular elasticity. This is accomplished by identifying cellular components with unique elastic signatures, and tracking those components over time within healthy cells or within cells treated to disrupt selective components.
Structural Evolution of Nickel Doped Zinc Oxide Nanostructures
Authors: Goswami Navendu , Sahai Anshuman 
Published: June 2019

ABSTRACTIn this article, structural evolution in nickel doped zinc oxide nanostructures is reported. The ZnO nanostructures are synthesized with 1-10% of Ni doping adopting a chemical precipitation method. The undoped and doped nanostructures thus prepared, were systematically investigated employing X-ray diffraction (XRD), transmission and scanning electron microscopy (TEM/SEM), Fourier transform infrared (FTIR) and micro-Raman spectroscopy (μRS). The identification of wurtzite phase and determination of lattice parameters of Ni doped ZnO nanocrystallites is ascertained through XRD analysis. TEM/SEM images reveal the structural alteration of ZnO with variation of Ni doping concentrations. The study of vibrational modes of nanostructures at different stages of structural transformation, as performed through FTIR and Raman spectroscopy, assist in deciphering the crucial role of Ni doping concentration in gradual evolution of nickel doped ZnO structure from nanoparticles to nanorods.
Partially-Filled Skutterudites: Optimizing the Thermoelectric Properties
Authors: Nolas G.S. , Kaeser M. , Littleton R.T. , Tritt T.M. , Sellinschegg H. , Johnson D.C. , Nelson E. 
Published: June 2019

ABSTRACTThe skutterudite family of compounds continues to be of interest for thermoelectric applications due to the low thermal conductivity obtained when filling the voids with small diameter, large mass interstitials such as trivalent rare-earth ions. In the last few years there has been a substantial experimental and theoretical effort in attempting to understand the transport properties of these compounds in order to optimize their thermoelectric properties. One such approach involves partially-filling the voids in attempting to optimize the power factor while maintaining low thermal conductivity. In this report experimental research on skutterudites with the voids partially filled with heavy mass lanthanide and alkaline-earth ions is reported.
Electrodeposition of Bi2Te3 Nanowire Composites
Authors: Prieto Amy L. , Sander Melissa S. , Stacy Angelica M. , Gronsky Ronald , Sands Timothy 
Published: June 2019

ABSTRACTWidespread applications of thermoelectric materials are limited due to low efficiency. Currently, the most widely used thermoelectric devices consist of alloys based on Bi2Te3. In such devices, the thermoelectric figure-of-merit (ZT) of bulk Bi2Te3 has been increased through doping. It is postulated that further enhancements in ZT may be attained by engineering the microstructure of the material to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. This may be achieved by fabricating Bi2Te3 in the form of one-dimensional (1D) nanowires. We have deposited nanowires of Bi2Te3 with two different diameters (200 nm and 40 nm) by electrodeposition into porous anodic alumina. Characterization of the Bi2Te3/porous Al2O3 composite materials has been accomplished using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Energy dispersive X-ray spectroscopy (EDS) has been used to determine the stoichiometry of the wires.
Theoretical Evaluation of the Thermal Conductivity in Framework (Clathrate) Semiconductors
Authors: Dong Jianjun , Sankey Otto F. , Myles Charles W. , Ramachandran Ganesh K. , McMillan Paul F. , Gryko Jan 
Published: June 2019

ABSTRACTWe have calculated the room temperature thermal conductivity in semiconductor germanium clathrates using statistical linear-response theory and an equilibrium molecular dynamics (MD) approach. A key step in our study is to compute a realistic heat-current J (t) and a corresponding auto-correlation function < J (t) J (0) >. To ensure convergence of our results and to minimize statistical fluctuations in our calculations, we have constructed large super-cell models (2944 atoms) and have performed several independent long time simulations (>1,500 ps in each simulation). Our results show an unexpected “oscillator” character in the heat-current correlation function of the guest-free Ge clathrate frameworks. This is absent in the denser diamond phase and other with simple structural frameworks. We seek to interpret these results using lattice dynamics information. A study of the effects of the so-called “rattling” guest atoms in the open-framework clathrate materials is in progress.
A Low-Frequency Forced Torsion Pendulum for the Measurement of the Mechanical Properties of Granular Media
Authors: D'Anna G. 
Published: June 2019

ABSTRACTWe present a forced torsion pendulum designed to measure the dynamic moduli of granular media. In the method, the oscillating probe of the pendulum is immersed into various materials, such as sand, glass beads, snow. The apparatus operates at low-frequency and provides information about the quasi-static mechanical properties of the medium. In particular, a peak in the losses is ascribed to friction and cohesion between the grains, and a measure of the macroscopic failure limit can be obtained. As an example the effect of moisture-induced ageing in small glass beads, and the effect of sintering of ice grains in snow, are shown.
Investigation of particulate systems using optical pathlength spectroscopy
Authors: Popescu Gabriel , Dogariu Aristide 
Published: June 2019

ABSTRACTIn many industrial applications involving granular media, knowledge about the structural transformations suffered during the industrial process is desirable. Optical techniques are noninvasive, fast, and versatile tools for monitoring such transformations. We have recently introduced optical path-length spectroscopy as a new technique for random media investigation. The principle of the method is to use a partially coherent source in a Michelson interferometer, where the fields from a reference mirror and the sample are combined to obtain an interference signal. When the system under investigation is a multiple-scattering medium, by tuning the optical length of the reference arm, the optical path-length probability density of light backscattered from the sample is obtained. This distribution carries information about the structural details of the medium. In the present paper, we apply the technique of optical path-length spectroscopy to investigate inhomogeneous distributions of particulate dielectrics such as ceramics and powders. The experiments are performed on suspensions of systems with different solid loads, as well as on powders and suspensions of particles with different sizes. We show that the methodology is highly sensitive to changes in volume concentration and particle size and, therefore, it can be successfully used for real-time monitoring. In addition, the technique is fiber optic-based and has all the advantages associated with the inherent versatility.
Particle Fluctuation Velocity in Gas Fluidized Beds - Fundamental Models Compared to Recent Experimental Data
Authors: Cody G. D. 
Published: June 2019

ABSTRACTThe first measurements of the mean squared fluctuation velocity, or granular temperature, of monodispersed glass spheres in gas fluidized beds were recently obtained by two independent techniques: Power Spectral analysis of wall vibrational energy excited by random particle impact or Acoustic Shot Noise (ASN), and Diffusing Wave Spectroscopy (DWS) of reflected laser light multiply scattered by random particle motion. We explore the relevance of this data to the initial stability of the uniform fluidized state and to recent fundamental models for the magnitude, gas flow, and particle diameter dependence of the steady state granular temperature.
Mechanical response of a static granular piling
Authors: Reydellet Guillaume , Vanel Loic , Clément Eric 
Published: June 2019

ABSTRACTWe present the results of different experiments which aim is to investigate the response of a static granular assemblies to various local perturbations. We design a sensitive experimental method to probe the response of a localized stress at the top of a granular piling. The piling is an horizontal 3D granular layer confined in a box and the spatial distribution of loads at the bottom is monitored. This analysis defines some crucial experimental test to inform a currently debated issue on the mechanical status of static granular assemblies.
Monte-Carlo Simulation of Three Dimensional Ion Dynamics in Polymers
Authors: Wagner A. , Kliem H. 
Published: June 2019

AbstractDynamic Monte-Carlo simulations of three dimensional ion motions are carried out based on a multi-well potential model. A parallel plate capacitor is modeled with an ionic conducting polymer having two ideal blocking electrodes. Positive ions (maximum 1000) are located on a cubic lattice with a maximum size of 100×100×100 locations. A negative background charge, constant in space and time, is used to provide charge neutrality. The positive ions can perform hops between neighboring sites with a probability corresponding to distributed energy barriers. To calculate the potentials due to an interaction of the ions the method of images is used. The steady state and the dynamic properties are studied after application of a voltage step in dependence on the sample thickness, the ion concentration and the voltage. A simulation of a space charge polarization yields an explanation for the experiments in the time and in the frequency domain.
Modeling Stress and Failure in Shrinking Coatings
Authors: Lei Herong , Francis Lorraine F. , Gerberich William W. , Scriven L. E. 
Published: June 2019

AbstractDrying or curing of a coating after vitrification or gelation is accompanied by stress development. Evaporation of solvent, polymerization, cross-linking, and cooling all cause shrinkage, but adhesion of the coating to the substrate prevents shrinkage to a stress-free state. The interaction of shrinkage and restraint creates strain and stress. If the local stress grows above the local strength of the coating, it can produce cracking, delamination, or other defects.A large deformation elastic model based on the Galerkin/finite element method is developed to analyze stress development in coatings subject to uniform shrinkage. The model is used to analyze effects of delamination and surface cracks. The strain energy release rates in both delamination and surface cracking are computed at different crack lengths. In both cases, results show that thicker coatings have larger energy release rates and are more vulnerable to cracking. A key conclusion of this modeling is that a crack can propagate only from an inherent flaw greater than a certain size. If the coating is thin enough so that the maximum energy release rate is less than the crack growth resistance, then no inherent flaws in the coating can grow into a crack, and so the coating remains crack-free. The model also shows how to calculate a critical coating thickness, i.e., the maximum thickness of a coating that can remain crack-free.
Crack Behaviour at Bi-Crystal Interfaces: A Mixed Atomistic and Continuum Approach
Authors: Pillai Arun R. , Miller Ronald E. 
Published: June 2019

AbstractInterfacial defects like grain boundaries and phase boundaries play an important role in the mechanical behaviour of engineering alloys. In this work the problem of a crack on a bi-crystal interface is studied at the atomic scale, with the goal of elucidating the effects of varrying interatomic interaction on crack behaviour and to assess the suitability of existing fracture criteria to the anisotropic bi-crystal case. Calculations are performed using the Quasicontinuum (QC) method [1]. Using suitable approximations, some of the existing fracture criteria were used to predict ductile or brittle fracture and compared to the QC results.
High Doped p-Type GaN Grown by Alternative Co-Doping Technique
Authors: Iwai Souhachi , Hirayama Hideki , Aoyagi Yoshinobu 
Published: June 2019

AbstractWe investigated the electrical properties of Mg-doped GaN grown by alternative pulse supplies of source and dopant materials in metalorganic vapor phase epitaxy. We obtained the hole concentration of 6×1018cm-3 for p-type GaN grown on a sapphire substrate by repetition of supply and purging of Ga and Mg sources in the constant NH3 flow, while that of p-type GaN grown by the constant feeding of Ga and Mg sources was 2×1018cm-3. By using alternative feedings of Ga source and NH3 with Mg-Si co-doping, we obtained a highly hole concentration of 2×1019cm-3 for p-type GaN which was grown directly on a low temperature AlN buffer layer. We also obtained the hole concentration of 6×1018cm-3 for p-type GaN which was grown on an AlGaN layer on a SiC substrate by alternative co-doping technique. The activation energies for Mg-doped GaN grown by the pulse feedings of source materials were lower than that for GaN grown by continuous supplies of source materials as used in the conventional technique.
Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source
Authors: Armitage Rob , Yang Qing , Feick Henning , Park Yeonjoon , Weber Eicke R. 
Published: June 2019

AbstractCarbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (<5×1020 cm-3) were actually ntype rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow (∼6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.
Comparative Study of trap levels observed in undoped and Si-doped GaN
Authors: Soh C. B. , Chi D. Z. , Lim H. F. , Chua S. J. 
Published: June 2019

AbstractIn this paper, deep level defects in undoped and Si–doped GaN have been studied using digital deep level transient spectroscopy. Common trap levels at Ec -ET ∼ 0.15-0.20 eV and 0.59-0.62 eV were detected for both undoped and Si-doped samples. For the doped samples, three additional defect levels at Ec-Et ∼ 0.11, 0.28, and 0.45 eV were detected. The concentration of the 0.15-0.20 eV was found to be much higher in undoped GaN that also shows higher dislocation density. Based on this correlation and the logarithmic capture behavior observed for this level, indicative of extended defect nature, we attribute the 0.15-0.20 eV level to dislocation related defects. On the other hand, the 0.28 and 0.45eV trap levels are tentatively attributed to Sirelated defects simply due to the fact that these two levels were observed only in Si-doped GaN. The 0.11eV trap level, which exhibits an exponential capture kinetic, is believed to be related to nitrogen vacancies.
Low-temperature operation of diamond surface-channel field-effect transistors
Authors: Tachiki Minoru , Ishizaka Hiroaki , Banno Tokishige , Sakai Toshikatsu , Song Kwang-Soup , Umezawa Hitoshi , Kawarada Hiroshi 
Published: June 2019

AbstractCryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.
Comparative Analysis of MBE-grown GaN Films on SiC, ZnO and LiGaO2 Substrates
Authors: Yun F. , Reshchikov M. A. , He L. , King T. , Huang D. , Morkoç H. , Nause Jeff , Cantwell Gene , Maruska H. Paul , Litton C. W. 
Published: June 2019

AbstractWe report the growth of GaN films by RF-MBE on SiC, ZnO, and LiGaO2 substrates, without buffer layers. Structural and optical properties of the films were probed by AFM for surface morphology, XRD for crystalline structure, and PL for optical properties. The dependence of GaN layer quality on the substrates and their surface pre-treatment prior to growth was studied within a similar MBE growth parameter matrix for all samples.
Perturbation of Copper Substitutional Defect Concentrations in CdS/CdTe Heterojunction Solar Cell Devices
Authors: Albin D. , Dhere R. , Wu X. , Gessert T. , Romero M.J. , Yan Y. , Asher S. 
Published: June 2019

AbstractThe efficacy of implementing terrestrial-based photovoltaics is dictated by trade-offs in device performance, cost, and reliability. Presently, the highest efficiency polycrystalline CdS/CdTe superstrate solar cells utilize back contacts containing copper as an intentional dopant. Accelerated stress data correlates copper diffusion from this contact with performance degradation. Degradation at the device level exhibits two characteristic modes that are influenced by CdTe surface treatments prior to contacting. Rapid degradation associated with a rapidly decreasing open-circuit voltage can occur in cases where processing favors stoichiometric CdTe surfaces. Slower degradation associated with roll-over is typified by treatments favoring the presence of Te at the back contact. The chemical composition and extent of Te-rich contact interfaces is revealed by transmission electron microscopy. Deep-level transient spectroscopy of NP etched and non-etched devices show Te-rich conditions are necessary for the detection of deep-acceptor CuCd defect levels at (Ev +0.28 to 0.34 eV). Low keV cathodoluminescence measurements show that these defects can be found localized at the back surface of CdS/CdTe devices.
The Elimination of Ion Implantation Damage at the Source/Drain Junction of Poly-Si TFTs
Authors: Jung Sang-Hoon , Lee Min-Cheol , Park Kee-Chan , Han Min-Koo 
Published: June 2019

AbstractWe report a new poly-Si TFT, of which the troublesome implantation damage near the source/drain junction was eliminated, by performing source/drain ion implantation as well as excimer laser annealing (ELA) prior to the gate formation. The recrystallization of a-Si in the channel region and the dopant activation in the source/drain region were simultaneously accomplished by single ELA process step so that the implantation damage, which results in large leakage current of TFT, has been successfully eliminated. TEM image verifies that large poly-Si grains were successfully grown from the ion implanted source/drain region to the channel region. The proposed poly-Si TFT, of which mobility is 171 cm2/Vs, exhibits a large on/off current ratio exceeding 4.1 × 107without LDD or offset structure while those of the conventional TFT, which has been fabricated simultaneously for the comparison purpose, are 86 cm2/Vs and 6.1 × 106.