bluuebunny/crossref_metadata_2025_split huggingface dataset:
Correlation of Material Properties and Open-Circuit Voltage of Amorphous Silicon Based Solar Cells
Authors: Yan Baojie , Yang Jeffrey , Yue Guozhen , Guha Subhendu 
Published: June 2019

AbstractCorrelation of hydrogenated amorphous silicon (a-Si:H) alloy material properties and solar cell characteristics have been studied experimentally and by computer simulation. Simulation results show that all three solar cell parameters, short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF), decrease with increased defect density. For a given intrinsic layer thickness, a larger band gap (Eg) results in a higher Voc but a lower Jsc. However, FF does not depend on band gap. This allows us to distinguish the effect of change in band gap from that in defect density on the variation in Voc. For solar cells with good interface characteristics, a linear relation FF = βVoc + γ is obtained by light soaking experiments and simulation with different defect densities. The slope β is in the range from 2 to 3 V-1 depending on cell properties and light soaking condition, and the intersect γ depends mainly on the band gap. Comparing cells made with high H2 dilution to no H2 dilution, we find that a 58 mV enhancement in Voc with H2 dilution is due to both widening of band gap and reduced defect density. Simulation results also show that a narrower valence band tail leads to a higher Voc. We did not include this effect in the analysis due to lack of available data for correlation between H2 dilution and band tail narrowing.
Deposition of Device Quality μc-Si Films and Solar Cells at High Rates by HWCVD in a W Filament Regime where W/Si Formation is Minimal
Authors: Iwaniczko E. , Mahan A.H. , Yan B. , Gedvilas L.N. , Williamson D.L. , Nelson P. 
Published: June 2019

Abstractμc-Si has traditionally been deposited by Hot Wire CVD at a low filament temperature. At these temperatures, silicides rapidly form on the filament surface, leading in the case of a tungsten filament to both film reproducibility and filament lifetime issues. By depositing films consecutively using identical deposition parameters, these issues are chronicled for a filament temperature of ∼ 1750°C. Upon increasing the filament temperature to ∼1825-1850°C, these reproducibility and lifetime issues disappear and, by lowering both the substrate temperature and chamber pressure, device quality μc-Si is deposited at high deposition rates in a filament regime where tungsten silicide formation is minimal. Both single junction and tandem solar cells are fabricated using this material, confirming the validity of this approach.
4H-SIC Dmosfets for High Frequency Power Switching Applications
Authors: Ryu Sei-Hyung , Agarwal Anant K. , Richmond James , Palmour John W. 
Published: June 2019

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.
Effect of Mn Doping in ZnO Thin Films Deposited by Pulsed Laser Deposition
Authors: Bhattacharya P. , Das Rasmi R. , Nieves J. , Yuzyuk Yu. I. , Katiyar Ram S. 
Published: June 2019

AbstractMn doped ZnO thin films were grown using pulsed laser deposition technique on (001) Al2O3 substrates. The x-ray diffraction data confirmed highly c-axis oriented and hexagonal structure of ZnO and Mn doped ZnO thin films. However, an unidentified secondary peak was observed at very close to ZnO (002) peak. Micro Raman spectra of ceramics as well as thin films showed disorder induced Raman bands besides standard wurtzite ZnO modes. The intensity of several LO modes of ZnO was increased with the increase of Mn concentration. Optical absorption data showed an additional absorption band towards lower than bandgap energy (3 eV) with the increase in Mn content. The incorporation of Mn in ZnO thin films reduced the value of resistivities and mobilities with an increase in carrier concentrations.
Quantitative Characterization of Dislocation Structure coupled with Electromigration in a Passivated Al (0.5wt%Cu) Interconnects
Authors: Barabash R.I. , Tamura N. , Valek B.C. , Spolenak R. , Bravman J.C. , Ice G.E. , Pate J.R. 
Published: June 2019

AbstractNew synchrotron x-ray microbeam methodology is used to analyze and test the reliability of interconnects. The early stage of plastic deformation induced by electromigration before any damages become visible has been recently revealed by white beam scanning X-ray microdiffraction during an accelerated test on Al interconnect lines. In the present paper, we provide a quantitative analysis of the dislocation structure generated in several micron-sized Al grains in both the middle region and ends of the interconnect line during anin-situelectromigration experiment. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of randomly distributed geometrically necessary dislocations as well as geometrically necessary boundaries. The orientation of the activated slip systems and rotation axis depends on the position of the grain in the interconnect line. The origin of the observed plastic deformation is considered in view of constraints for dislocation arrangements under applied electric field during electromigration. The coupling between plastic deformation and precipitation in the Al (0.5% wt. Cu) is observed for the grains close to the anode/cathode end of the line.
Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects
Authors: Krishnamoorthy Ahila , Huang N.Y. , Chong Shu-Yunn 
Published: June 2019

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.
Plasma Enhanced Chemical Vapor Deposition of Porous Organosilicate Glass ILD Films With k ≤ 2.4.
Authors: Vrtis Raymond N. , O'Neill Mark L. , Vincent Jean L. , Lukas Aaron S. , Peterson Brian K. , Bitner Mark D. , Karwacki Eugene J. 
Published: June 2019

AbstractWe report on our work to develop a process for depositing nanoporous organosilicate (OSG) films via plasma enhanced chemical vapor deposition (PECVD). This approach entails codepositing an OSG material with a plasma polymerizable hydrocarbon, followed by thermal annealing of the material to remove the porogen, leaving an OSG matrix with nano-sized voids. The dielectric constant of the final film is controlled by varying the ratio of porogen precursor to OSG precursor in the delivery gas. Because of the need to maintain the mechanical strength of the final material, diethoxymethylsilane (DEMS) is utilized as the OSG precursor. Utilizing this route we are able to deposit films with a dielectric constant of 2.55 to 2.20 and hardness of 0.7 to 0.3 GPa, respectively.
Optimized Materials Properties for Organosilicate Glasses Produced by Plasma-Enhanced Chemical Vapor Deposition
Authors: O'Neill M.L. , Vrtis R.N. , Vincent J.L. , Lukas A.S. , Karwacki E.J. , Peterson B.K. , Bitner M.D. 
Published: June 2019

AbstractIn this paper we examine the relationship between precursor structure and material properties for films produced from several leading organosilicon precursors on a common processing platform. Results from our study indicate that for the precursors tested the nature of the precursor has little effect upon film composition but significant impact on film structure and properties.
Electrical, Mechanical, and Structural Properties of Fluoro-Containing Poly(silsesquioxanes) Based Porous Low k Thin Films
Authors: Hyeon-Lee Jingyu , Rhee Jihoon , Kim Jungbae , Yim Jin-Heong , Chang Seok 
Published: June 2019

AbstractLow dielectric fluoro-containing poly(silsesquioxanes) (PSSQs) have been synthesized using trifluoropropyl trimethoxysilane (TFPTMS), methyl trimethoxysilane (MTMS), and 2, 4, 6, 8-tetramethyl-2, 4, 6, 8-tetra(trimethoxysilylethyl) cyclotetrasiloxane. The properties of fluorocontaining PSSQs based thin films were studied by electrical, mechanical, and structural characterization. Film was spun on a silicon substrate, baked at 150°C and 250°C for 1 minute, respectively, and cured in the furnace at 420°C for 1 hour under vacuum condition. Thermally decomposable trifluoropropyl groups of the fluoro-containing PSSQ were served as a pore generator and partially contributed to lower a dielectric constant. â-cyclodextrin (CD) was also employed as a pore generator. The concentration of the pore generator in the film was varied from 0 to 30 %. The dielectric constants of the porous PSSQ films were found to be in the range of 2.7 – 1.9 (at 100 kHz). Hardness and Young's modulus of the films were measured by nano-indentation. The elastic modulus and hardness of the porous films were well correlated with the concentration of the pore generators. Positronium Annihilation Lifetime Spectroscopy (PALS) was employed to characterize a pore size of the porous fluoro-containing PSSQ film. The pore size of the film was less than 2.2 nm. The nanoporous films showed quite promising properties for commercial application.
Determination of Pore Size Distributions in Nano-Porous Thin Films from Small Angle Scattering
Authors: Bauer Barry J. , Hedden Ronald C. , Lee Hae-Jeong , Soles Christopher L. , Liu Da-Wei 
Published: June 2019

AbstractSmall angle neutron and x-ray scattering (SANS, SAXS) are powerful tools in determination of the pore size and content of nano-porous materials with low dielectric constants (low-k) that are being developed as interlevel dielectrics. Several models have been previously applied to fit the scattering data in order to extract information on the average pore and/or matrix size. A new method has been developed to provide information on the size distributions of the pore and matrix phases based on the “chord length distribution” introduced by Tchoubar and Mering. Examples are given of scattering from samples that have size distributions that are narrower and broader than the random distribution typical of scattering described by Debye, Anderson, and Brumberger. An example of fitting SANS data to a phase size distribution is given.
Using multi-dimensional contact mechanics experiments to measure Poisson's ratio of porous low-k films
Authors: Lucas B. N. , Hay J. C. , Oliver W. C. 
Published: June 2019

AbstractUsing a new multi-dimensional contact mechanics system, it was recently shown that the experimentally measured tangential to normal stiffness ratio of a contact can be described as a function of the bulk Poisson's ratio of the material as predicted by Mindlin [1-3]. This system has been utilized to measure the normal and tangential elastic contact stiffness of a series of porous low-k films, with increasing starting porogen content. These results indicate a transition from a material-controlled elastic behavior to a structure-controlled elastic behavior as the porosity of the film is increased. These structural effects and their potential influence on the mechanical response to forces imposed on integrated circuits are discussed. The experimental details and apparatus are introduced and described.
Synthesis and Mechanical Properties of TiN-AIN Thin Film Heterostructures
Authors: Waters C. , Kumar D. , Yarmolenko S. , Xu Z. , Sankar J. 
Published: June 2019

AbstractTiN and AlN are promising thin film materials. There is continuing interest in their mechanical, electronic and optoelectronic properties. Our studies have shown that mechanical properties can be changed by forming thin film heterostructures of the two materials. We report on our pulsed laser deposition assisted synthesis, microstructural characterizations and mechanical properties of TiN/AlN multi-layer structures. The TiN/AlN superlattice structures are fabricated on (100) silicon substrates at different temperatures (400-800oC) and different nitrogen ambient pressures. The nano-mechanical hardness properties of the multi-layered structures were examined as a function of thickness of individual layers keeping the overall thickness of heterostructures constant. Thickness variations of the films are measured with a optical phase-shift interferometer. The mechanical properties of the TiN-AlN heterostructures have been found to be associated with interfacial interaction between layers. The interfacial interaction, in turn, depends on processing parameters the most important among which is substrate temperature.
Determination of Ag/Co Interfacial Free Energies by Biaxial Zero Creep Experiments
Authors: An Bing , Zhang Tong-jun , Yuan Chao , Cui Kun , Zhang Wei 
Published: June 2019

AbstractTo measure the Ag/Co interfacial free energies, biaxial zero creep experiments were performed on Ag/Co multilayer films deposited on the Si (111) wafers. As the samples were heated from room temperature to 450°C, the residual stress in films, which was in situ monitored by substrate curvature technique, decayed gradually to zero due to the increasing plastic deformation in films. After held for several hours at 450°C, they reached a zero creep state while the equilibrium stresses were measured. The annealed element layers were immiscible, and exhibited the column grain distribution and (111) preferred orientations. Based on the Josell model, the free energy of Ag/Co (111) interfaces at 450°C was found to be 1.02 ± 0.17 J/m2.
Mechanical Behavior Of Elastomeric Stamps During Microcontact Printing Patterns: Direct Observation Of Stamps And Inks
Authors: Blackman Gregory S. , Jagota Anand , Sharp Kenneth G. 
Published: June 2019

AbstractMicrocontact printing is a straightforward and effective method for generating surface patterns of micron or submicron lateral dimensions. The fidelity of the ultimate pattern is a complex interplay of mechanical behavior of the elastomeric stamp, fluid transfer between surfaces and the ability of the ink to self-assemble on the new surface. We present here experimental observations and modeling of stamp deformation during precise external loads and visualization of inked surfaces by high contrast analytical methods. Stamp behavior was observed visually in an inverted microscope and load-displacement relationships used to determine onset of failure modes such as roof collapse and buckling of slender relief features as a function of stamp geometry. The load was applied with a glass sphere so as to obviate problems with alignment and to precisely determine contact areas.A “robotic stamper” fabricated from an AFM instrument can deliver ink under conditions of precise load. Surfaces inked with varying densities or combinations of SAMs can be imaged with excellent contrast by scanning surface potential microscopy (SSPM). The same area of the sample can then be examined using time-of-flight SIMS or other surface analytical technique with no additional etching or sample preparation. In this way the fidelity and density of the patterned monolayers can be evaluated. The effect of load on ink pattern quality can also be established.
Dislocation Intersections and Reactions in FCC and BCC Crystals
Authors: Kubin Ladislas P. , Madec Ronan , Devincre Benoit 
Published: June 2019

AbstractThe various types of configurations formed in face-centered cubic (fcc) and body-centered cubic (bcc) structures by two interacting, non-coplanar, dislocation segments of various orientations are examined and discussed. The focus is on junction formation and on a particular interaction, the collinear interaction, which deserves much more attention than paid up to now.
In-Situ TEM Studies of Sessile Dislocation Arrangements and N Vacancy Ordering in ZrN
Authors: Li P. , Howe J.M. 
Published: June 2019

AbstractDissociation of perfect 1/2<110> single dislocations into two 1/6<112> Shockley partial dislocations in ZrN was observed by transmission electron microscopy (TEM). The 1/2<110> single dislocations have a super-jog character and are not coplanar with the dissociated Shockley partials. This sessile arrangement of dislocations may be responsible for the brittleness of ZrN. The wide separation of the partial dislocations bounding stacking faults indicates that the stacking-faults energy (SFE) is low in ZrN. The low SFE can be explained on the basis of a high vacancy concentration, which was confirmed by the appearance of diffuse intensity maxima in electron diffraction patterns due to short-range ordering (SRO) of N vacancies. In-situ heating experiments in the TEM revealed that the diffuse intensity maxima disappear during heating and reappear on cooling. This indicates that N (or N vacancy) diffusion scrambles the SRO arrangement of N vacancies during heating. The width of the stacking faults in ZrN increases with temperature, indicating that the SFE decreases as the vacancy concentration increases.
A Continuum Model for Single Crystal Cyclic Plasticity
Authors: Xu Biqiang , Jiang Yanyao 
Published: June 2019

AbstractA constitutive model was developed to bridge the cyclic plasticity behavior of single crystals and the corresponding characteristic dislocation structures. Yield and flow were built on the individual slip systems. The Armstrong-Frederick kinematic hardening rule was invoked to capture the Bauschinger effect. A material memory parameter was introduced to consider the amplitude dependence of cyclic hardening. Latent hardening considering the interactions among the slip systems was used to describe the anisotropic cyclic behavior. The experimental results of copper single crystals were used to validate the model developed. It was found that the model was able to adequately describe the well-known three distinctive regions in the cyclic stress-strain curve of the FCC single crystal oriented for single slip and the associated dislocation substructures. The model was capable of capturing the enhanced hardening observed in copper single crystals in multi-slip orientations. For a given loading history, the model can predict not only the saturated stress-strain response but also the detailed evolution of the transient cyclic behavior. The characteristic dislocation structures can be featured with the slip evolution.
A Study of Localized Corrosion in Al Resulting From The Controlled Introduction of Cl
Authors: Johnson C. M. , Wall F. D. , Barbour J. C. , Martinez M. A. 
Published: June 2019

AbstractHigh purity Al samples were implanted with 35 keV Cl+ then polarized in Cl--free electrolyte in order to ascertain corrosion behavior as a function of Cl content. Electrochemical data indicated implant fluences between 5x1015 and 2x1016 Cl+cm-2 resulted in little or no localized attack. Implant fluences of 3x1016 and 5x1016 Cl+cm-2 resulted in significant attack with the severity scaling as a function of implant fluence. The low variability in the behavior of localized corrosion for the 5x1016 Cl+cm-2 sample suggests that this implant dosage may result in a critical Cl- in the sample for pit nucleation. Optical and Electron microscopy images indicated some reactivity associated with lower fluences (1x1016Cl+cm-2), possibly indicating enhanced general dissolution. At high magnification the corrosion was observed to occur outside the implanted boundary through mechanisms of tunneling or altered local chemistry at those sites. The SEM images reveal a form of localized corrosion with a crystalline character.
Passive Layer Breakdown on Titanium in Doped and Undoped Artificial Saliva
Authors: Demetrescu Ioana , Popa Mihai V. , Vasilescu Ecaterina , Drob Paula , Popescu Belarisa , Ionita Daniela , Vasilescu Cora 
Published: June 2019

AbstractThe aim of this work is to investigate the long term (3000 exposure hours) tendency of passive layers on titanium to breakdown in Tani-Zucchi and Carter-Brugirard artificial saliva undoped and doped with chloride and fluoride ions. The non-uniformity of the saliva pH (from 7.88 to 5.73 and extreme case 2.15) was simulated. The following techniques were used: potentiostatic, potentiodynamic and linear polarization, the monitoring of the open circuit potentials vs. exposure time and atomic force microscopy. The breakdown (pitting) potential at about +2.9 V and the re-passivation potential at +2.4 V in Tani-Zucchi artificial saliva were determined. So, the pitting protection potential is very noble and can not be reached in human body.
Pb Electrodeposition in the Presence of Chlorine Ions on Cu(100): An in Situ Optical Reflectivity Difference Study
Authors: Gray J. , Schwarzacher W. , Zhu X.D. 
Published: June 2019

AbstractWe studied the initial stages of the electrodeposition of Pb in the presence of chlorine ions on Cu(100), using an oblique-incidence optical reflectivity difference (OIRD) technique. The OI-RD results reveal that immediately following the underpotential deposition (UPD) of the first Pb monolayer, two different types of bulk-phase films grow depending upon the magnitude of overpotential and cyclic voltammetry (CV) scan rate. At low overpotentials and/or slow scan rates, we propose that a bulk-phase Pb film grows on top of the UPD monolayer. At high overpotentials and/or fast scan rates, either a PbO, PbCl2, or a rough Pb bulk-phase layer grows on top of the UPD layer such that the reflectivity difference signal from such a film has an opposite sign.
Doe Progress in Assessing the Long Term Performance of Waste Package Materials
Authors: Berusch A. , Gause E. 
Published: June 2019

Summary:Each of the projects has made significant progress toward the eventual operation of a repository for the disposal of high-level radioactive wastes in the United States. Although much has been accomplished, much remains to be done. For example, the Site Characterization Plans for BWIP and NNWSI are nearing completion to be followed by initiation of site characterization activities. The Site Characterization Plan for the selected salt site is scheduled for completion later in 1987. Waste package advanced conceptual design studies are currently scheduled to begin at each project before the end of FY 1987. These efforts will lead to selections of concepts to be detailed in the license application design phase. Compliance with the NRC criteria that require long-term waste package performance will be demonstrated by DOE by performing all of the aforementioned activities. In doing so, the DOE will also be assured that its plan for the safe disposal of high-level waste will be satisfactorily implemented.