bluuebunny/crossref_metadata_2025_split huggingface dataset:
Characterization of auto-agglutinating and non-typeable uropathogenic Escherichia coli strains
Authors: Hernández-Chiñas Ulises , Pérez-Ramos Alejandro , Belmont-Monroy Laura , Chávez-Berrocal María E , González-Villalobos Edgar , Navarro-Ocaña Armando , Eslava Carlos A , Molina-Lopez Jose 
Published: July 2019

Introduction: Uropathogenic Escherichia coli (UPEC) are the main etiological agent of urinary tract infections (UTIs). Association between different serotypes and UTIs is known, however, some strains are incapable to be serotyped. The aim of this work was to study bthe phenotypical and genotypical characteristics of 113 non-typeable (NT) and auto-agglutinating (AA) E. coli strains, isolated from UTIs in children and adults.
Methodology: The 113 UPEC strains were analyzed by PCR assays using specific primers to determine their serogroups, fimH, papC, iutA, sat, hlyCA and cnf1, virulence associated genes, and chuA, yjaA and TSPE4.C2 for phylogroup determination. Additionally, the diffusion disk method was performed to evaluate the antimicrobial resistance to 18 antimicrobial agents.
Results: Using the PCR assay, 63% (71) of the strains were genotyped showing O25 and O75 as the most common serogroups. The virulence genes fimH (86%) and iutA (74%) were the most prevalent, in relation to the phylogroups the commensal (A and B1) and virulent (B2 and D) showed similar frequencies (P > 0.05). The antimicrobial susceptibility test showed a high percentage (73%) of multidrug-resistant strains.
Conclusions: The genotyping allowed identifying the serogroup in many of the strains that could not be typed by traditional serology. The strains carried virulence genes and were multidrug-resistant in both, commensal and virulent phylogroups. Our findings revealed that, in addition to the classical UPEC serogroups, there are pathogenic serogroups not reported yet.
Tick-borne encephalitis in Serbia: A case series
Authors: Poluga Jasmina , Barac Aleksandra , Katanic Natasa , Rubino Salvatore , Milosevic Branko , Urosevic Aleksandar , Mitrovic Nikola , Kelic Ivana , Micic Jelena , Stevanovic Goran 
Published: July 2019

Introduction: In the Europe, the number of tick-borne encephalitis (TBE) has been increased in the last decade, and the number of endemic areas has been also increased and is still growing. In the present case series, we present clinical and socio-epidemiological data of patients with TBE hospitalized in the period of TBE virus epidemic in Serbia.
Methodology: A case series was conducted in Serbia in 2017. Patients with confirmed TBE were included in the study. Biochemical and serological analysis of blood and CSF, as well as radiological imaging (CT and MRI) were done.
Results: In total, 10 patients with TBE were included in the study. M:F ratio was 1.5:1, while average age was 45.1 years. Half of the patients had severe clinical picture. Endocranial CT scan and MRI did not reveal any abnormality, except in the patient with the most severe CNS infection (meningoencephalomyelitis). Mean value of sedimentation and CRP was slightly elevated (29.6 mm/1hours and 20.1 mg/L, respectively) in 80% of the patients, although elevation was almost negligible. The average number of leucocytes in the cerebrospinal fluid (CSF) was 171×106/L, the mean value of the CSF protein was 1.1g/L. There were no fatal outcomes.
Conclusion: Since other CNS infections have similar clinical picture and CSF finding as TBE, serological analysis for TBE should be included in routine diagnostic practice.
La décristallisation des pensions des anciens militaires africains : et après ?
Authors: Evrard Camille 
Published: July 2019

Les anciens militaires de l’armée française ressortissants des anciennes colonies subsahariennes ont vu leur pension figée à partir des années 1950, ce qui a conduit à leur accorder des droits amoindris. À la suite d’un long combat juridique, cette disposition discriminatoire a été supprimée des textes légaux. Cette « décristallisation » a cependant été très limitée dans les faits. Ses modalités d’application, le labyrinthe administratif à affronter, les distances à parcourir, le manque de relais contribuent à dégrader le quotidien de pensionnés aujourd’hui très âgés.
Parametric study of electronics components joining using reactive films for high temperature applications
Authors: Khazaka Rabih , Martineau Donatien , Youssef Toni , Le Thanh Long , Azzopardi Stéphane 
Published: July 2019

Abstract
In this paper, in order to assemble electronic components onto substrates, a local rapid soldering process using an exothermic reactive foil sandwiched between solder preforms was evaluated. Among others, the main interest of this technique is that it can allow the use of high temperature melting solders, without the need to heat the whole assembly above this melting temperature. The reactive foil is commercially available and is formed from alternatively stacked nanolayers of Ni and Al until it reaches the total film thickness. Once the film is activated by using an external power source, a reaction takes place and releases such an amount of energy that is transferred to the solder preforms. If this amount of energy is high enough, solder preforms melt and insure the adhesion between the materials of the assembly. The process was evaluated using a standard SAC305 and a high temperature Au80Sn20 preforms. The influences of the applied pressure, the reactive film thickness as well as the solder and the attached materials nature and thicknesses were investigated. The initial joint quality was evaluated using scanning acoustic microscopy, scanning electron microscopy, and shear strength measurements. It was shown that the applied pressure during the process has a strong effect on the joint initial quality. The voids ratio between metallized diode dice and an Active Metal Braze (AMB) substrate decreases from 64% to 26% for pressure values between 0.5kPa and 100kPa respectively. Otherwise, under a constant low pressure of 13kPa, reducing the substrate metal thickness on a low thermal conductivity insulator allows the improvement of the initial joint quality and a voids ratio of about 15% was reached when using 35μm of copper on FR4 substrate. The use of aluminum instead of copper as a metal for the ceramic metallized substrate (with the same gold finishing layer) led to a reduction in the void ratio in the joint. The microstructure of the AuSn joint achieved using the reactive films shows very fine phase distribution compared to the one obtained using conventional solder reflow process in the oven. The mechanical properties of the joint were evaluated using shear tests performed on 350μm thick silicon diodes assembled on AMB substrates under a pressure of 100kPa. The reactive films were 60μm thick and were sandwiched between two 25μm thick SAC preforms. The void ratio was about 37% for the tested samples and shear strength values above 9.5MPa were achieved which remains largely higher than MIL-STD-883H requirements. Finally, the process impact on the electrical properties of the assembled diodes was compared with a commonly used solder reflow assembly and results show a negligible variation.
Stackable SiC Embedded Ceramic Packages for High Voltage and High Temperature Power Electronics Applications
Authors: Bach Hoang Linh , Dirksen Daniel , Blechinger Christoph , Endres Tobias Maximilian , Bayer Christoph Friedrich , Schletz Andreas , März Martin 
Published: July 2019

Abstract
This paper encompasses the development of a high voltage and high temperature capable package for power electronic applications based on the embedding of SiC (silicon carbide) semiconductor devices in ceramic circuit carrier such as direct bonded copper (DBC) substrate. By sealing the semiconductor devices into DBC substrates, high temperature, high voltage and high current capability as well as high corrosion resistance can be achieved compared to state-of-the-art PCB (printed circuit board) embedding technology. The power devices are attached with high temperature stable solder and sinter material, and are surrounded by thermal conductive ceramic and high temperature capable potting materials that enable the complete package to operate at 250 °C or above. Furthermore, the single embedded packages can be stacked together to multilevel DBC topologies with increased voltage blocking characteristics. Thus, current limits of PCB and LTCC (low-temperature co-fired ceramic) based multilayer solutions are exceeded and will be confirmed in the course of this study. This package is designed to carry out the maximal performance of SiC and future WBG (wide band-gap) devices. It is a promising solution for applications in harsh ambient environment such as aerospace and turbine, geothermal well logging, down hole-well oil & gas, but also applicable for HEV/EV (hybrid electric/electric vehicle) and energy conversion.
Characteristics of Organic-Based Thermal Interface Materials Suitable for High Temperature Operation
Authors: Wang Baron , Chen Andrea S. , Lo Randy H.Y. 
Published: July 2019

Abstract
Historically, for semiconductors subject to standard operating temperatures--which tend not to exceed 125°C--the Tg (glass transition temperatures) of the organic packaging materials protecting the chips is usually around 175°C. Given that, when it comes to electronics operating at high temperatures—typically an environment where the ambient temperature exceeds 200°C—the use of organic materials is generally prohibited due to rapid degradation. At those elevated temperatures, the packaging materials selected are generally composed of metals and ceramics but these materials come with their own shortfalls as well as higher material and manufacturing costs. Therefore, it would be desirable if there were ‘ruggedized’ versions of the organic compounds so commonly used in semiconductor packaging but available for more extreme temperatures, both to reduce cost and package footprint.
Meanwhile, the demands from recent developments in high performance computing (HPC) and high-speed data networks means a greater need for increased power and thermal dissipation coupled with very large package body sizes to accommodate the high I/O count. The latest in server microprocessor (MPU) products can easily generate up to 300W during operation, and the heat generated must be quickly transported away from chip to prevent the threat of thermal shutdown. The thermal dissipation issue is controlled by the use of heat spreaders and heat sinks, both of which are intended to make contact with the back-side of a flipped MPU via a thermal interface material (TIM), as part of a large die, large body-size flip-chip ball grid array (FCBGA) package.
The thermal interface materials discussed here are examples of organic engineered materials that are capable of withstanding higher operating temperatures than typically seen by semiconductors encased in organic-based packaging. This paper will look at the key material and mechanical attributes for a good thermal interface material, examines the pros-and-cons of various thermal interface material formulations, and discusses the factors for reliable thermal dissipation performance.
Comparative study of how additives affect sintered silver microstructure in die-attach applications
Authors: Lo Ming , Paknejad Seyed Amir , Borrill Harry , Kong Wan K. , Addo-Kwabena Addo , Saidoune Mohamed , Powley Chris , Kapadia Naim , Zuo Yang , Mannan Samjid H. 
Published: July 2019

Abstract
Die attach materials based on silver nanoparticles which sinter at temperatures in the range 200–300 °C are a comparatively new technology. The properties of the sintered structure can be affected by a wide range of additives which can alter the physical and chemical characteristics of the joints. In this study, a commercially available Ag nanoparticle paste has been used as the base, and a range of additives have been added principally to determine the effect of each additive on the sintered microstructure immediately after sintering, and after long term thermal ageing. The additives trialled include Au, Sn, Cu, and Zn. In each case the additive powder was mixed with the original paste and the microstructure after sintering was compared to the microstructure after ageing at 250 °C for 24 h. Another method of introducing an additive into the system is adding it as a mesh, interposed between die and substrate and immersed in the silver paste. Au was added in both this form, and in the form of a powder additive. The mesh results in a thermodynamically stable microstructure up to at least 500 °C. The design takes advantage of solid–solid interdiffusion bonding which results in a die attach assembly with a continuous, non-porous gold-silver interdiffusion layer running all the way from the die to the substrate.
Fabrication of highly reliable joint based on Cu@Ni@Sn double-layer powder for high temperature application
Authors: Xu Hongyan , Shen Yaochun , Hu Yihua , Li Jianqiang , Xu Ju 
Published: July 2019

Abstract
A highly reliable three-dimensional network structure joint was fabricated based on Cu@Ni@Sn core-shell powder and transient liquid phase bonding (TLPB) technology for high temperature application. Cu@Ni@Sn joint is characterized by Cu metal particles embedded in the matrix of (Cu,Ni)6Sn5/Ni3Sn4 intermetallics (IMCs), low level of voiding is achieved, they can be reflowed at a low temperatures (&lt;260°C), but reliably working at high temperature up to 415°C. Cu@Ni@Sn double-layer microparticles with different Sn layer and Ni layer thickness were fabricated and compressed as preform used for TLPB joint bonding, the microstructure and phase composition evolution for Cu@Sn and Cu@Ni@Sn system were comparatively studied during reflowing and aging process. Different kinds of interfacial structure designs were made, interfacial microscopic morphology was analyzed and compared under once and twice reflowing soldering process. Results indicated that Sn coating layer was completely consumed to form (Cu,Ni)6Sn5/Ni3Sn4 IMCs, Cu@Ni@Sn bondline have lower void rate and higher shear strength than that of Cu@Sn. The mechanism of Ni coating layer inhibit Cu atom diffusing towards Cu6Sn5 to form Cu3Sn was studied. The high reliable three-dimensional network structure joint based on Cu@Ni@Sn double-layer powder was fabricated for high temperature application.
Resistors for High Temperature Applications
Authors: Morris Tom 
Published: July 2019

Abstract
The use and growth of high temperature electronics in a variety of applications (such as oil and gas exploration and production, automotive under the hood, aerospace and satellite/space to name a few), has necessitated a closer look at the technology used in passive components (such as resistors). A variety of resistor technologies may be suitable for high temperature applications. In the paper information, on thin film technologies (both nichrome and tantalum nitride thin film information is presented), thick film, and wire-wound construction is presented, with discussions regarding their respective characteristics that make them more or less suitable for high temperature and other excessive environments. This paper presents information on resistor construction details, material information and manufacturing processing, along with test data and performance summaries under short and long term high temperature conditions. Additionally, other pertinent test data through typical environmental tests is presented
Although resistors and other passive components are often taken for granted, high temperature applications can tax the performance of many resistor types. The proper selection of resistive components will insure that the stability, temperature coefficient (and temperature coefficient tracking for resistor networks), and reliability is maintained to insure reliable circuit performance.
A modular application specific active test environment for high-temperature wafer test up to 300 °C
Authors: Meister Michael , Reinhard Marco 
Published: July 2019

Abstract
Applications in harsh environment such as high temperatures require electronic devices for signal amplification, calculations and digital interfaces. These devices often contain ASICs (application specific integrated circuits) which are suitable for high temperatures above 125 °C. For functionality verification of these high-temperature ASICs a high-temperature wafer test environment is necessary.
This article describes a high-temperature wafer test setup which can be used up to 300 °C. It is based on a modular concept for a maximum of 48 test channels. The combination of three modular components (contact needle system, thermal insulation chamber and active probe card) allows adapting the setup to different ASICs and pad layouts. The active probe card operates at temperatures below 65 °C during 300 °C wafer test temperature. It is mounted on the thermal insulation chamber for signal amplification, defined loads or generation of precise input signals. This modular concept significantly shortens the development time for the high-temperature wafer test and thus saves time and reduce the costs of ASIC development.
Elevated levels of glutathionyl haemoglobin as an oxidative stress marker in patients with major depressive disorder
Authors: Mathew Boby , Srinivasan Krishnamachari , Johnson Pradeep , Thomas Tinku , Mandal Amit Kumar 
Published: July 2019

Background & objectives:
Oxidative stress has been implicated in the pathophysiology of major depressive disorder (MDD), but biomarkers to assess oxidative stress in patients with MDD have yielded ambiguous results. Glutathionyl haemoglobin (GS-Hb) has been reported as a stable and potential biomarker for oxidative stress in various clinical conditions. The objective of the study was to evaluate GS-Hb as a potential biomarker of oxidative stress in patients with MDD through its quantification and to compare the levels of GS-Hb in age- and gender-matched healthy controls.

Methods:
The levels of GS-Hb were estimated using liquid chromatography coupled to electrospray ionization mass spectrometry in patients diagnosed with MDD and in a subset of patients after six weeks of treatment with selective serotonin reuptake inhibitors (SSRIs).

Results:
GS-Hb levels in drug-naïve patients with MDD (n=26) were significantly elevated compared to matched healthy controls (n=17). GS-Hb levels were not significantly different between MDD patients with and without co-morbid anxiety disorders. There were no significant differences in GS-Hb levels following six weeks of treatment with SSRIs compared to baseline.

Interpretation & conclusions:
Compared to controls, GS-Hb level in patients with MDD was significantly elevated, suggestive of increased oxidative stress associated with MDD. However, six weeks of antidepressant treatment was not sufficient to modify the alterations in antioxidant/oxidant system. Further studies need to be done with a large sample of MDD patients with a longer duration of antidepressant treatment.
Multiplicação in vitro de Xylopia aromatica em diferentes meios de cultura e concentrações de BAP
Authors: Porfírio Kennedy De Paiva , Titon Miranda , Castro Ana Caroline Macedo de , Pereira Israel Marinho , Knegt Rafael Antonius Pfeilsticker de 
Published: July 2019

Este estudo teve por objetivo desenvolver uma metodologia de multiplicação in vitro para Xylopia aromatica, visando a produção de mudas, avaliando-se meios de cultura e concentrações de reguladores de crescimento mais adequados. Foram utilizados, como explantes, segmentos nodais, provindos de brotações de mudas produzidas via seminal e mantidas em viveiro. Foram testados os meios de cultura Murashige Skoog (MS) e Wood Plant Medium (WPM) suplementados com 800 mg L-1 de polivinilpirrolidona (PVP), 30 g L-1 de sacarose, 0,054 µM de ácido naftalenoacético (ANA) e 6 g L-1 de ágar e concentrações de 2,22 e 3,55 µM de benzilaminopurina (BAP) para a multiplicação in vitro. Aos trinta dias, avaliou-se o número de brotações laterais emitidas e o percentual de explantes formando calos na base. As maiores taxas de multiplicação foram obtidas com o meio MS acrescido de 3,55 µM de BAP. Em relação à formação de calos na base dos explantes, o meio MS promoveu maior formação quando comparado ao WPM, no entanto não comprometeu a formação de brotos. Foi possível estabelecer as fases de introdução e multiplicação, definindo assim o meio de cultura e concentrações de reguladores de crescimento mais adequados ao cultivo in vitro de Xylopia aromatica.
Intraoperative Transesophageal Echocardiography: A Safeguard for Cardiovascular Surgery!
Authors: Wells Cynthia MQ 
Published: July 2019

How to cite this article
Subramaniam K, Wells CMQ. Intraoperative Transesophageal Echocardiography: A Safeguard for Cardiovascular Surgery!. J Perioper Echocardiogr 2014;2(2):49-50.
What is the Effect of Implant-tooth Distance on Resonance Frequency Analysis Measurements?
Authors: Aljuboori Mohammed Jasim , Filho Luiz Carlos Magno , Al-Obaidi Farah Saadi , Al-Wakeel Hussein Ali , Al-Marzok Maan Ibrahim 
Published: July 2019

ABSTRACTObjectivesThe volume and density of the bone surrounding an implant directly affect the implant stability during the healing period.The aim of this study was to determine the correlations between resonance frequency analysis (RFA) readings and implant-tooth distances at the crestal and average apicalcrestal levels.Materials and methodsNine patients received 22 implants. Periapical radiographs were taken at 6 weeks, and the implant-tooth mesial and distal crestal level distances were measured, along with the mesial and distal apical levels. The average mesial (AM) and average distal (AD) apical-crestal distances were calculated. In cases in which either the AM or the AD of the implant was below 4 mm, the specimens were placed in the AMD– group; when both the AM and the AD were greater than 4 mm, the specimens were placed in the AMD+ group. The lower values were used for both groups. Resonance frequency analysis measurements were taken in the mesiodistal direction at 6 weeks. The correlations between the mean RFAs and the means of the distances were examined using Spearman's or Pearson's correlation tests, depending on the distributions of the data.ResultsThe mean and SD of the AD group was 3.99 ± 3.19. The mean and SD of the AM group was 3.80 ± 2.67. The mean and SD of the AD– group was 2.72 ± 0.89. The mean and SD of the AD+ group was 6.34 ± 2.94. The mean and SD of the RFAs at 6 weeks was 77.82 ± 5.24, and for the AMD– and AMD+ groups, these measures were 78 ± 5.55 and 77.64 ± 5.36, respectively. None of the correlations between the RFAs and any of the distances were significant: AD (r = 0.114; Pearson's test, p < 0.05), AM (r = – 0.217; Spearman's test p < 0.05), AMD– (r = 0.248; Pearson's test, p < 0.05), and AMD+ (r = 0.3; Spearman's test, p < 0.05).ConclusionWithin the limitations of this study, no correlations between the RFA readings and the implant-tooth distances were found at any level or distance.How to cite this articleAljuboori MJ, Filho LCM, Al-Obaidi FS, Al-Wakeel HA, Al-Marzok MI. What is the Effect of Implant-tooth Distance on Resonance Frequency Analysis Measurements? Int J Experiment Dent Sci 2015;4(2):124-129.