bluuebunny/crossref_metadata_2025_split huggingface dataset:
Failure Case Studies of GaAs-Based Oxide-Confined VCSELs
Authors: Ho Kuang-Tse , Li Cheng-Che 
Published: October 2021

Abstract
Vertical-cavity surface-emitting lasers (VCSELs) have many advantages over edge-emitting devices, but they tend to be more sensitive to increasing current density both in lifetime and reliability. To better understand this relationship, the authors investigated the cause of 35 failures involving GaAs-based oxide-confined VCSELs. This paper presents a summary of the procedures, methods, and equipment used, the defects and damages observed, and the root causes behind each failure. The authors followed a standard failure analysis workflow consisting of PEM and OBIRCH fault isolation, plan view TEM to confirm the location and distribution of defects, and cross-sectional TEM (XTEM) to determine the profile of a defect at a specific site. All failures examined could be attributed to one of four basic failure mechanisms: burnout due to ESD, dislocations, oxide diffusion, and oxide delamination.
Automated Metrology on the Verticality of Cross-Sectioned Channel Hole at V-NAND with Over 200 Layers by Transmission Electron Microscope
Authors: Kim Dong-yeob , Son Jong-ick , Kang Christopher H 
Published: October 2021

Abstract
This paper describes the development and implementation of a TEM-based measurement procedure and shows how it is used to determine the verticality or etching angle of channel holes in V-NAND flash with more than 200 layers of memory cells. Despite the high aspect ratio of the region of interest, the method can resolve offsets down to a few nm. Such precision is critical, as the paper explains, because the radius and thus electrical characteristics of each memory cell is determined by the etching angle.
Advanced Soft Defect Screen Methodology for Nanoscale SRAM Yield Improvement
Authors: Kim Pangyum , Kim Hyungtae , Kim Youngdae 
Published: October 2021

Abstract
This paper explains how embedded assist and timing control techniques are being used to improve soft defect screening in nanoscale static random access memory (SRAM). The electrical stress test method is evaluated on advanced FinFET devices. As test results show, resistive and parametric defects that are difficult if not impossible to detect using conventional techniques become visible with the aid of assist and timing control circuits.
Enabling Automated Sample Delayering, Imaging, and Probing Prep with an Adaptive Endpointing Workflow
Authors: Morgan-Jones Sean , Carleson Pete , Najarian Mark , Mitchson Gavin , Franco Noel , Weeks Sophia , Mandala Suri 
Published: October 2021

Abstract
With manufacturers now capable of creating transistors in the 5-7 nm node range, the ability to isolate, inspect, and probe individual metal and via layers is of the utmost importance for defect inspection and design validation. These isolated layers can be inspected for defects via SEM, provide design validation, or tested with electrical probing for failure analysis. The work herein describes a functional workflow that enables manufacturers to perform this kind of sample preparation in an automated fashion using plasma focused ion beam (FIB) technology. The workflow is scalable and can be used in both lab and fabrication environments.
Automated Cell Layer Counting and Marking at Target Layer of 3D NAND TEM Samples by Focused Ion Beam
Authors: Ryu Jisu , Kim Seojin , Kang Christopher H. , Baek Jaeheum 
Published: October 2021

Abstract
This paper discusses the development of an automated cell layer counting process for preparing 3D NAND flash memory samples for TEM analysis. In an initial proof-of-concept, several line markings were inscribed on the test device in evenly spaced intervals in order to evaluate its helpfulness for a human operator. A more automated procedure was then developed in which cell layers were counted to a desired target layer starting from a reference layer set by the operator. At that point, the operator could begin preparing the TEM sample.
P-N Junction Analysis using Electron Beam Induced Current (EBIC) Technique
Authors: Sarnecki Lori L. , Kuan Regina 
Published: October 2021

Abstract
This paper describes how electron beam induced current (EBIC) analysis is used to determine the doping profile of p-n junctions and identify defective devices. The limitations of both chemical etching and EBIC are discussed as is the use of ion milling as a potential method for enhancing resolution. The findings in this paper add to the understanding of EBIC and provide insights to further improvements in its use in failure analysis.
Practical Methodologies in Restoring Initial Failure Mode and Backside Focused Ion Beam Cross-Section for Defect Visualization
Authors: Tampos Alvina Jean , Villareal Karl 
Published: October 2021

Abstract
An image sensor module failed in the field and was returned showing functional issues and a supply-to-ground short. After the hard lens mounted over the imaging chip was removed, the short disappeared along with the functional issues. This paper explains how the authors were able to restore the failure mode and discover the underlying defect, via backside focused ion beam cross-sectioning, with minimal intrusion into the top-side package and silicon.
Electro-Optical Probing for Capturing Fast-to-Rise Scan Chain Failures
Authors: Villareal Karl , Estores Rommel , Baert Peter 
Published: October 2021

Abstract
This paper explains how the authors determined the cause of a fast-to-rise failure discovered during scan chain testing of an image sensor. The failed device was mounted on a portable card that facilitates transfer between test platforms in an electro-optical probing (EOP) system. Initial fault localization was conducted through backside PEM, but the results were inconclusive. The part was then analyzed on a digital scan chain tester to check for flaws in the daisy chain of shift registers. Through broken scan chain analysis, the potential cause of the problem (a failing flip-flop) was narrowed down to a few chain links and ultimately pinpointed using EOP fault isolation techniques. The failed device was then deprocessed by parallel lapping and analyzed in a SEM, revealing a broken poly gate as the physical cause of failure.
Maximizing ATPG Diagnosis Resolution on Unique Single Failing Devices
Authors: Sabate Andrew , Estores Rommel 
Published: October 2021

Abstract
For unique single failures, which tend to be the case in customer return and reliability failures, selecting another sample or performing root cause deconvolution is not an option, and if diagnostic tests are not conclusive, it becomes necessary to extend the effectiveness of automatic test pattern generator (ATPG) diagnosis in order to determine the failure mechanism. This paper proposes a way to improve resolution using single-shot logic and high-resolution targeted patterns. Two cases are presented to demonstrate the approach and show how it performed on actual failing units.
Genetic Algorithm-Based Digital Test Optimization Method and its Application to Yield Improvement
Authors: Chan Y.H. , Goh S.H. 
Published: October 2021

Abstract
This paper presents a machine learning approach that uses genetic algorithms to optimize test program timing sets based on first silicon. The method accounts for test hardware differences, discrepancies in silicon processes, and IO pin interdependency. The general theory and implementation are covered in detail and the capabilities of the method, in terms of false fail discovery, elimination, and failure debug, are demonstrated using actual product test cases.
Defect Inspection Wafer Notch Orientation and Defect Detection Dependency
Authors: Purwaningsih Lindarti , Konsulke Philipp , Tonhaeuser Markus , Jantoljak Helena 
Published: October 2021

Abstract
This case study shows that wafer notch orientation can have a significant effect on defect capture rates obtained during defect inspection. The discovery was made when a review of historical data showed that the relationship between defect densities and yield varied greatly for different products in regard to a terminal metal layer. A product design analysis on the affected layer revealed that a majority of metal lines were oriented the vertical direction in one product and in the horizontal direction in the other. It was then shown that this difference could be offset by rotating the wafer in the defect scan tool, which resolved the data discrepancy. This work highlights the importance of considering the orientation of metal lines in each layer when creating a new defect scanning recipe.
Large Area Semiconductor Device Delayering for Failure Identification and Analyses
Authors: Nowakowski Pawel , Bonifacio Cecile , Ray Mary , Fischione Paul 
Published: October 2021

Abstract
This paper presents a development in semiconductor device delayering by broad ion beam milling that offers a uniform delayering area on a millimeter scale. A milling area of this size is made possible by the user's ability to position ion beams individually to cover the desired area. This flexibility in ion beam positioning also enables more precise targeting of an area of interest.
A Novel Sample Preparation Method for Frontside Inspection of GaN Devices after Backside Analysis
Authors: Colpaert Tony , Verleye Stefaan 
Published: October 2021

Abstract
This paper presents a method that allows top view SEM inspection on GaN devices previously subjected to PEM analysis from the backside and the associated sample preparation procedures. By filling the backside cavity with glob-top resin and epoxying the device to a piece of silicon, it is possible to remove all covering layers with a sequence of wet etches. A dried Ag liquid strap eliminates SEM charging problems and backside laser marks are made visible from the front side using an IR wavelength. The paper describes each step of the process in detail along with the results of the frontside SEM inspection.
Simultaneous Interface Defect Density and Differential Capacitance Imaging by Time-Resolved Scanning Nonlinear Dielectric Microscopy
Authors: Yamasue Kohei , Cho Yasuo 
Published: October 2021

Abstract
This work highlights the unique capabilities of time-resolved scanning nonlinear dielectric microscopy as demonstrated in the study of SiO2/SiC interfaces. Scanning nonlinear dielectric microscopy (SNDM) is a microwave-based scanning probe technique with high sensitivity to variations in tip-sample capacitance. Time-resolved SNDM, a modified version, is used in this study because it allows simultaneous nanoscale imaging of interface defect density (Dit) and differential capacitance (dC/dV), lending itself to correlation analysis and a better understanding of the relationships that influence interface quality. Through cross-correlation analysis, it is shown that Dit images are not strongly correlated with simultaneously obtained dC/dV images, but rather with difference images derived from dC/dV images recorded with different voltage sweep directions. The results indicate that the dC/dV images visualize the nonuniformity of the total interface charge density and the difference images reflect that of Dit at a particular energy range.
Yield Basics for Failure Analysts
Authors: Albert Dave , Myers Tracy 
Published: October 2021

Abstract
This presentation provides an overview of the terminology and concepts associated with semiconductor yield analysis, modeling, and improvement techniques. It compares and contrasts yield models and describes the steps and equipment involved in setting up yield engineering programs targeting specific failures and defects. It also includes case histories showing how different yield analysis models have been used to identify the root cause of random and systematic failures.
Photonic Localization Techniques
Authors: Boit Christian 
Published: October 2021

Abstract
This presentation provides an overview of photonic measurement techniques and their use in isolating faults and locating defects in ICs. It covers transmission, reflectance, and absorption methods, describing key interactions and important parameters and equations. Reflectance methods discussed include electro-optical probing (EOP), electro-optical frequency modulation (EOFM), and laser-voltage imaging (LVI). Absorption methods covered include those based on the absorption of light in semiconductors, as in optical beam induced current (OBIC), light-induced voltage alteration (LIVA), and laser-assisted device alteration (LADA), and those based on absorption in metals, as in thermally induced voltage alteration (TIVA), optical beam induced resistance change (OBIRCH), and thermoelectric voltage generation or Seebeck effect imaging (SEI). The presentation also covers thermoluminescence (lock-in thermography) and electroluminescence (photon emission) measurement methods and assesses hardware security risks posed by current and emerging photonic localization techniques.
Technique Selection for Front End of Line Defect Localization in Bulk Si FA
Authors: Johnson Greg 
Published: October 2021

Abstract
This presentation is a pictorial guide to the selection and application of measurement methods for defect localization. The presentation covers electron beam absorbed current (EBAC), electron beam induced current (EBIC), passive voltage contrast (PVC), optical and electron beam induced resistance change methods (OBIRCH and EBIRCH), lock-in thermography, photon emission microscopy (PEM), and nanoprobing. It describes how the measurements are made, the sensing mechanisms involved, and the output that can be expected.
Flip-Chip and Backside Techniques
Authors: Cole Edward I. , Fishgrab Kira L. , Barton Daniel L. , Bernhard-Höfer Karoline 
Published: October 2021

Abstract
This presentation covers the basic physics needed to effectively apply backside IC analysis techniques to flip-chip packaged die. It describes the principles of light transmission through silicon and the factors that influence optical image formation from the backside of the wafer or die. It also provides information on the tools and techniques used to expose surfaces, regions, and features of interest for analysis. It describes the steps involved in CNC milling, mechanical grinding and polishing, reactive ion etching (RIE), laser microchemical (LMC) etching, and milling and etching by focused ion beam (FIB). It explains where and how each technique is used and quantifies the capabilities of different combinations of methods.
SUBJECTIVE ATTITUDE TO REMOTE WORK AMONG SPECIALISTS WITH DIFFERENT INDIVIDUAL-TYPOLOGICAL CHARACTERISTICS IN COVID-19 CIRCUMSTANCES
Authors: Shirokaya M. , Zhukova O. 
Published: October 2021

The study is focussed on the specialist’s with different individual-typological characteristics attitude to the changed conditions for accomplishing work tasks, satisfaction and professional success in the conditions of remote work during global pandemic. Objectives of the study: learn about the attitude specifics of the specialists with different individual-typological characteristics (cognitive styles) to remote work, job satisfaction during pandemic and professional success.
The study involved 120 respondents. To obtain the results a professional psychological questionnaire and a methodology of individual typological characteristics (L.N.Sobchik) were used. As a result of the analysis, it was found that respondents with different cognitive styles differ among themselves in the indicator of assessing the duration of working hours after the introduction of a remote work format, a subjective indicator of preference (choice) of a remote work format over face-to-face and professional success in these conditions. Respondents with formal-logical, verbal and accentuated cognitive styles noted an increase in the duration of working hours during switching to a remote work format and they had the lowest indicators of professional work success. Individuals with visual-figurative and intuitive cognitive styles did not notice an increase in the duration of working hours due to the transition to a distance with the highest indicators of professional success in activity. It is concluded that the
"stress of time" was a valid factor influencing the decrease in professional success in the conditions of universal telecommuting in a pandemic. No connection was found between the cognitive styles of the respondents and the subjective assessment of job satisfaction in a distant setting.
BASIC POLITICAL VALUES
Authors: Kryukov V. , Rubancova T. , Sotnikova E. 
Published: October 2021

In the article, from the point of view of the theory of values, the main categories of political philosophy are considered: politics, management, power. The tribal community was governed by rituals and taboos. In civil society, it is necessary to develop an order of relations between strangers, and for this it is necessary to adopt some rules of behavior that become laws and develop into legal codes, sets of legal norms.
Two circumstances are of fundamental importance in the functioning of social roles: due to the fact that the social role is a secondary and transformed form of personality, it represents, replaces one, several or many personalities. The phenomenon of representation is dialectically accompanied by its reverse side – the personification of a social role. The performer of a particular social role, occupying a position, being nominated for a particular post, being endowed with a certain rank, rank or degree and title, not only freely, but also out of necessity identifies himself and his social position.
Psychological Features of Police Officers’ Conflict Behavior: Gender Aspect
Authors: Platkovska O. V. 
Published: October 2021

To date, there are no scientifically sound recommendations for resolving conflicts in law enforcement activity, there are no methods for resolving conflicts, and there are no means for managing the conflict behavior of police officers taking into account the gender aspect.
The purpose of the work is to conduct a comprehensive study of psychological characteristics of conflict behavior of police officers taking into account the gender aspect. Theoretical and empirical methods were used in the work. According to the results of conducted theoretical analysis the author has noted the psychological and moral preconditions for conflict prevention with the participation of police officers taking into account the gender aspect.
According to the method of “Personal Aggression and Conflict” the highest rates in the first group (police officers – women) were obtained on the scale of “conflict”. The lowest rates among women are on the scale of “negative aggression”. The highest rates in the second group (police officers – men) – were on the scales of “conflict” and “positive aggression”. The lowest rates were on the “negative aggression” scale.
The highest rate on the scale of “adaptation” according to the method of “Diagnosis of Style of Behavior in Conflicts” (K. Thomas) is both among women and men. Women and men according to the “rivalry” scale have a low rate.
The highest rate for women according to the method of “Diagnosis of Conflict Resolution Strategies" was on the “adaptation” scale. The highest rate among men was the scale of “cooperation”. Prevention rates among women are low. Men have the lowest rate on the “competition” scale.
Analyzing the results of the study of the style of behavior of police officers in conflict situations within the gender aspect, it was found out that the higher the tendency to avoid conflict, the less are manifestations of styles of rivalry, cooperation and adaptation. At the same time, as the length of service increases, the tendency to adaptive style of behavior in conflict situations increases, which may be associated with manifestations of professional deformation and burnout; strategies of compromise and avoidance in conflict situations are in the lead.
National Police of Ukraine as a Party to a Police Service Contract
Authors: Vereitin S. V. 
Published: October 2021

Scientific approaches to determining the legal status of the employer in labor relations have been studied considered. The author has studied the norms of the Law of Ukraine “On the National Police”, which determine the identity of the employer and his authority to enter into a police service contract.
It has been noted that the state is the employer in labor legal relations of police officers. However, employer powers in accordance with Part 1 of the Art. 63 of the Law of Ukraine “On the National Police” are delegated from the state to the National Police of Ukraine. Employer powers are directly exercised by the head of the police agency granting the right to accept and dismiss from the police. This person, on the one hand, is a representative of the employer, on the other hand – an employee.
It has been stated that the Law of Ukraine “On the National Police”, defining the identity of the employer in the labor legal relations of police officers, did not enshrine the labor rights and responsibilities of the National Police of Ukraine as an employer. It is recommended to clearly define the list of labor rights and responsibilities of the National Police of Ukraine as an employer in the Law of Ukraine “On the National Police”. The following groups of labor rights of the National Police of Ukraine should be envisaged: 1) the right to select on the position of a police officer; 2) the right to accept, transfer and dismiss from the police; 3) the right to demand from the police officer to perform his / her functional duties; 4) the right to organize and manage the service; 5) the right to apply incentives; 6) the right to compensation ин police officers for the damage caused to the property of the police agency as a result of the violation of their functional duties by police officers. It is also necessary to consolidate the following groups of labor responsibilities of the National Police of Ukraine: 1) ещ provide the police щаашсук with work that meets the job descriptions and functional responsibilities of the relevant position; 2) ещ create appropriate service conditions necessary for the performance of functional duties; 3) to ensure proper rest of police officerі; 4) to provide timely financial support to police officerі and in the full extent; 5) to provide social protection for police officers; 6) to ensure the protection of the life and health of police officers, the life and health of family members, as well as their property.