bluuebunny/crossref_metadata_2025_split huggingface dataset:
Rare Mandibular Surgical Ciliated Cysts: First Case Reported in a Brazilian
Authors: Lopes-Santos Gabriela , Filho Hugo Nary , Oliveira Denise Tostes 
Published: December 2024

AbstractThis reported case represents the first well-documented mandibular surgical ciliated cyst, following orthognathic surgery consisting of a combination of Le Fort I bimaxillary and sagittal osteotomy concomitantly with genioplasty, reported in a Brazilian patient. A case of 43-year-old female presenting a mandibular surgical ciliated cyst after 16 years of an orthognathic surgery, consisting of a combination of Le Fort I osteotomy and genioplasty, is reported. The cystic lesion was enucleated, and the histopathological analysis showed a cystic cavity lined by pseudostratified columnar respiratory-type epithelium presenting ciliated and mucous cells supported by fibrous connective tissue without inflammation. The diagnosis established was a mandibular surgical cilited cyst. Then, for diagnosis of mandibular surgical ciliated cyst is essential the association of clinical/imagological and histopathological features with the patient' past history showing evidence of previous surgery in the mandible concomitant with the maxilla.
The Effect of Novel Laser-Activated Bleaching Protocols on the Color Change of Non-Vital Anterior Teeth: An In Vitro Study
Authors: EL Zayat Inas , Hamid Mohamed Bahgat Abdel , Farouk Ahmed Tarek , El-Damanhoury Hatem Mostafa 
Published: December 2024

Abstract
Objective This study compares the color change of non-vital anterior teeth after laser-activated bleaching and conventional walking bleaching technique.
Materials and Methods Sixty extracted teeth were endodontically treated, stained in a black tea solution, and the baseline shade was measured using a spectrophotometer (Easyshade, VITA). Bleaching was done using either: internal bleaching with 35% H2O2 (Opalescence Endo) and then tooth sealed for 5 days (Gr1), 35% H2O2 (JW Next) for 7 minutes (Gr2), internal and external bleaching for 7 minutes (Gr3), diode laser-activated internal bleaching for 30 seconds (940 nm, continuous wave, 2 W, noncontact mode, 300 um, non-initiated tip), wait for 7 minutes, second laser application for 30 seconds, tooth sealed for 5 days (Gr4), diode laser-activated internal bleaching for 24 hours (Gr5), or diode laser-activated internal and external bleaching for 24 hours (Gr6) (n = 10). The color change (ΔE00) was measured and data were analyzed using one-way analysis of variance followed by Tukey post hoc test (a = 0.05). The inner dentin of the samples was inspected using scanning electron microscopy.
Results All the tested bleaching techniques were able to change the color. All the laser-activated bleaching protocols, namely, Gr4, Gr5, and Gr6, showed higher mean ΔE00 values than the non-laser-activated bleaching Gr2 and Gr3 (p < 0.05) and were statistically similar (p > 0.05) to the control group Gr1. Laser-activated bleaching caused surface modification and dentinal tubule opening.
Conclusion All the tested laser-activated bleaching protocols showed faster and more efficient color change, comparable to the conventional 5-day walking bleaching protocol.
Realized stable BP-N at ambient pressure by phosphorus doping
Authors: Chen Guo , Zhang Chengfeng , Zhu Yuanqin , Cao Bingqing , Zhang Jie , Wang Xianlong 
Published: December 2024

Black-phosphorus-structured nitrogen (BP–N) is an attractive high-energy-density material. However, high-pressure-synthesized BP-N will decompose at low pressure and cannot be quenched to ambient conditions. Finding a method to stabilize it at 0 GPa is of great significance for its practical applications. However, unlike cubic gauche, layered polymeric, and hexagonal layered polymeric nitrogen (cg-N, LP-N, and HLP-N), it is always a metastable phase at high pressures up to 260 GPa, and decomposes into chains at 23 GPa. Here, on the basis of first-principles simulations, we find that P-atom doping can effectively reduce the synthesis pressure of BP-N and maintain its stability at 0 GPa. Uniform distribution of P-atom dopants within BP-N layers helps maintain the structural stability of these layers at 0 GPa, while interlayer electrostatic interaction induced by N–P dipoles enhances dynamic stability by eliminating interlayer slipping. Furthermore, pressure is conducive to enhancing the stability of BP-N and its doped forms by suppressing N-chain dissociation. For a configuration with 12.5% doping concentration, a gravimetric energy density of 8.07 kJ/g can be realized, which is nearly twice that of trinitrotoluene.
Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Authors: Zhang Lihao , He Miao , Wang Xiaoyu , Zhang Haodong , Han Keying , Liu Yonglai , Zhang Lei , Cheng Yingchun , Pan Jie , Qu Zhe , Wang Zhe 
Published: December 2024

Abstract
We report the bias voltage-controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states (DOS) at high energy levels. By adjusting the DOS weighting at different k-points to account for misalignment between the crystal structure of electrodes in experimental devices, we improved agreement between experimental and theoretical inversion voltages. Our results provide valuable insight into the voltage-controlled spin injection and detection in two-dimensional magnetic tunnel junctions, with implications for the development of energy-efficient spintronic devices.
Nanowrinkle waveguide in graphene for enabling secure Dirac fermion transport
Authors: Jun Seunghyun , Jung Myung-Chul , Myoung Nojoon 
Published: December 2024

Abstract
Localized states in graphene have garnered significant attention in quantum information science due to their potential applications. Despite graphene’s superior transport and electronic properties compared to other semiconductors, achieving nanoscale confinement remains challenging due to its gapless nature. In this study, we explore the unique transport properties along nanowrinkles in monolayer graphene. We demonstrate the creation of a one-dimensional conduction channel by alternating pseudomagnetic fields along the nanowrinkle, enabling ballistic Dirac fermion transport without leakage. This suggests a feasible method for secure quantum information transfer over long distances. Furthermore, we extend our analysis to bent nanowrinkles, showcasing well-guided Dirac fermion propagation unless the bent angle is sufficiently large. Our demonstration of the nanowrinkle waveguide in graphene introduces a novel approach to controlling Dirac fermion transport through strain engineering, for quantum information technology applications.
Optimizing electrical and mechanical properties via intermetallics distribution in Cu–Al spot welding
Authors: Shi Shih-Chen , Weng Wei-Chieh , Rahmadiawan Dieter 
Published: December 2024

Abstract
This study investigates the role of barrier layers in minimizing intermetallic formation during copper–aluminum spot welding to improve mechanical properties and electrical conductivity. Results show that introducing barrier layers, such as nickel and zinc, reduces hardness as expected but leads to complex effects on tensile strength and electrical conductivity. Two key mechanisms are identified: diffusion blocking, which limits intermetallics formation, and energy absorption modulation during welding, which influences strength based on barrier layer thickness. Nickel barriers significantly increase tensile strength, peaking at 15 μm, while zinc barriers reach maximum effectiveness at 20 μm. Beyond optimal thickness, incomplete welding penetration causes a decline in strength. Al2Cu is identified as the primary intermetallic compound formed during direct copper–aluminum welding. With nickel barriers, Al2Cu is dispersed, suggesting better diffusion control. Zinc barriers, on the other hand, lead to the formation of Al4Cu9 and Al2Cu, both dispersed similarly within the weld nucleus. Higher welding currents (1200 A) yield stronger welds than lower currents (1100 A), highlighting the importance of welding parameters in optimizing mechanical performance. Electrical resistivity is influenced by intermetallic layers and defects like cracks or voids at the interface, impacting overall electrical performance. This study provides insights into how barrier layers and welding conditions can be optimized to enhance the mechanical and electrical performance of copper–aluminum spot welds.
Optical characterization of actively cooled switching arcs in SF6 alternatives
Authors: Engelbrecht J T , Kumari D , Franck C M 
Published: December 2024

Abstract
A detailed study of the evolution of transient arc properties in SF6 alternative gas mixtures was carried out on an experimental puffer circuit breaker. Thermal interruption tests were performed in several CO2-based mixtures under short-line fault-like current and voltage stresses, with the test device providing a similar arc environment and interruption performance to a commercial circuit breaker. The time evolution of arc properties including the radius, temperature, and electron density were investigated using high-speed imaging and optical emission spectroscopy techniques. These results were compared with simulation results from a simple 1-D, two-zone arc model. Spatially resolved measurements of the arc were obtained in the critical interruption regions of the nozzle, including the first reported 2D measurements of the temperature distribution during the interruption process in CO2. These measurements revealed a faster temperature decay in the nozzle throat, indicative of stronger cooling in this region compared to the upstream stagnation zone. Comparisons between the behavior of SF6 and its alternatives largely agreed with the model predictions, with lower temperatures and earlier temperature decay observed in SF6, followed by CO2-based mixtures, while air exhibited the highest temperatures and latest onset of temperature decay. No significant influence of oxygen content was observed on the maximum arc temperature of CO2 / O2 mixtures at currents above 500 A, where values ranging from 20 kK to 25 kK were typically observed.
Thermal plasma technology applied to the inertization process of the inorganic fraction of sewage sludge generated from municipal wastewater treatment plant
Authors: Busquet de Sant’Anna Junior Alvaro , Miranda Felipe de Souza , Paiva Moreira Junior Pedro William , da Cruz Antonio Carlos , Essiptchouk Alexei , Ferreira Antônio , Fuji Marcio , Petraconi Gilberto 
Published: December 2024

Abstract
This study investigates the thermal plasma pyrolysis process for inertizing the inorganic fraction of sewage sludge from municipal wastewater treatment plants. The aim is to assess its effectiveness in waste inertization. Lab-scale experiments were conducted to process the sludge thermally. Elemental composition analysis was done using x-ray fluorescence (XRF), thermogravimetry coupled with mass spectrometry (TGA-MS) and x-ray diffraction (XRD). The XRF analysis showed an initial composition of Si, Al, Fe, and Ca, corresponding to 86.8% of the inorganic matter of the sludge. TGA-MS analysis showed a significant mass loss between 200 and 650°C, corresponding to organic matter volatilization, methane conversion, and dehydrogenation of polymorphic silicon. XRD analysis revealed a dried sludge crystalline structure composed mainly by SiO2, CaCO3, and AlPO4, and after plasma treatment, the remaining composition of the slag was primarily SiO2 amorphous. Mass and energy balances, considering thermodynamic equilibrium and chemical reactions, are performed. The mass balance calculations identified the most probable composition of the sludge, and energy balance calculations determined a net energy requirement of 399 kWh for plasma inertization, with an additional 300 kWh to account for furnace losses. Solubility and leaching tests confirm the inert nature of the residue. Power requirements are estimated at 700 kW for processing 350 kg h−1 of decarbonized sludge. These findings are crucial for optimizing plasma inertization processes in wastewater treatment plants. This work presents a novel approach by combining a computational prediction for an industrial-scale plant with a direct experimental assessment of the plasma treatment process.
Intriguing magnetic and electronic behaviors in La and Ru doped Sr2IrO4
Authors: Dundi Sri Chandana B , Tiwari Jeetendra Kumar , Saranya K , Rana Arpita , Senthil Murugan G , Dhenadhayalan Namasivayam , Choi Kwang-Yong , Sekhar K C , Babu P D , Sankar Raman , Panneer Muthuselvam I 
Published: December 2024

Abstract
We report a detailed experimental study of the structural, magnetic and electrical properties of La and Ru doped (Sr1−x
La
x
)2Ir1−x
Ru
x
O4 (x= 0.05, 0.15). X-ray diffraction analysis reveals that both samples crystallize in a tetragonal structure with a space group I41/acd without impurities. Substitution with La and Ru leads to an increase in the lattice parameter a and a decrease in c. With increasing doping concentration, the Ir–O–Ir bond angle increases while the Ir–O bond length decreases. X-ray photoelectron spectroscopy (XPS) shows that Ir has Ir3+ (5d
6) and Ir4+ (5d
5) charge states, where the Ir4+ charge state decreases with an increase in doping concentration. The dc magnetic susceptibility χ (T) of x= 0.05 reveals a transition from paramagnetic to weak ferromagnetic (wFM) at T
C ∼ 229 K, arising from the canted antiferromagnetic (AFM) spin arrangement. The magnetic ordering temperature T
C remains unaltered for higher doping, whereas the magnetic moment is significantly reduced. The analysis of real and imaginary components of ac susceptibility data, based on conventional critical slow model, frequency shift per decade and Vogel–Fulcher law, unanimously evidences the existence of reentrant spin-glass behavior (RSG), i.e. the coexistence of weak ferromagnetism and spin glass phases for the lowest doping of x= 0.05. On the other hand, for higher doping (x = 0.15) of hole and electron, the RSG phase vanishes, leaving only the wFM phase at the same temperature as observed in x = 0.05. This suggests the higher doping of La and Ru does not affect the magnetic order, but removes the disorder between FM and AFM phases. The electrical resistivity (ρ) measurement analysis reveals that both the samples show semiconducting/insulating behavior across the temperature range. The ρ of the x= 0.05 sample is lower than that of pure sample Sr2IrO4 (Bhatti et al 2015 J. Phys.:Condens. Matter
27 016005), while ρ of x = 0.15 shows two orders of magnitude larger than the x = 0.05 sample at low temperatures. The conduction mechanism of both samples is described by the 2D Mott’s variable-range hopping model. Our results demonstrate that co-doping of two cation sites generates intriguing, competing hopping and magnetic processes.
Bearing fault signal detection based on non-negative matrix factorization and dual-feedback segmented unsaturated tristable stochastic resonance system
Authors: Zhang Gang , Cao Longmei 
Published: December 2024

Abstract
Stochastic resonance is widely used in bearing fault detection due to its ability to enhance weak signals. This paper proposes a fault detection method that combines noise reduction with stochastic resonance. Firstly, a segmented unsaturated potential function based on the classic potential function is constructed, and a dual-feedback structure is introduced to feed the system output back to the input, thereby enhancing system performance. Secondly, the theoretical expressions for the mean first passage time and the spectral amplification of the dual-feedback segmented unsaturated tristable stochastic resonance (DSUTSR) system are derived and analyzed. Additionally, a numerical simulation comparison using the fourth-order Runge–Kutta method is performed between the DSUTSR system and its predecessor systems to verify the improvements brought by the dual-feedback structure. Subsequently, non-negative matrix factorization (NMF) is introduced as a noise reduction method, with cross-validation used to determine the decomposition rank of NMF to guide the decomposition of the fault signal matrix. Finally, the combination of NMF and the DSUTSR system is used to detect bearing fault frequencies under white noise and Lévy noise backgrounds. Experimental results demonstrate the superiority and effectiveness of the proposed method in fault signal detection. This system holds significant potential for future weak signal detection, effectively enhancing and identifying fault signals hidden within noisy backgrounds.
On a supercritical Hardy–Sobolev type inequality with logarithmic term and related extremal problem
Authors: Francisco de Oliveira José , Silva Jeferson 
Published: December 2024

Abstract
Our main goal is to investigate supercritical Hardy–Sobolev type inequalities with a logarithmic term and their corresponding variational problem. We prove the existence of extremal functions for the associated variational problem, despite the loss of compactness. As an application, we show the existence of weak solution to a general class of related elliptic partial differential equations with a logarithmic term.
The effect of series stacking on fast interruption for drift step recovery diode
Authors: Yan Xiaoxue , Liang Lin , Liu Tong , Qing Zhengheng , Yan Hui 
Published: December 2024

Abstract
The excellent working consistency of drift step recovery diode (DSRD) contributes to the formation of high-voltage devices by means of connecting in series. In addition to the voltage, there are still other important parameters of DSRD when connecting in series waiting to be discussed. In this paper, the effect of series stacking on the fast interruption process of DSRD is systematically and comprehensively investigated from theory, simulation, and experiment. The pulse voltage output characteristics of DSRD based on silicon (Si) and silicon carbide (SiC) with the number of chips in the stack ranging from 1 to 8 and 1–10 are studied using transformer circuits and dual power supply circuits, respectively. The results of Si and SiC two materials exhibit good consistency, both showing that the rising time (t
r) of the output voltage gradual decreases and then stabilizes with increase in the number of chips. By establishing a simplified equivalent circuit for stacked DSRDs in series, the calculation formula for t
r is given. It turns out that the series connection can reduce the device’s capacitance and thus reduce t
r, provided that the voltage obtained on each single chip does not change with the increasing stacking quantity. In addition, taking the ∼16 kV DSRD as an example, the effect of seven different stacking schemes on the fast interruption of the device is analyzed. Based on the standards of high V
peak, high dv/dt, and small t
r, the output characteristics of the schemes with stacking quantities 1 and 14 are the worst, while the schemes with stacking quantities 2–5 have better characteristics. The main reason for the phenomena depends on the relative impact of the drift layer structure and number of chips in the stacking scheme on t
r.
Electrostatic discharge failure and protection of single-walled carbon nanotube field-effect transistors
Authors: Chen Yipeng , Zhang Ling , Zhu Xinyu , Jiang Yunhao , Xu Zhencheng , Gao Zhiliang , Cheng Qianding , Zhou Li , Dong Shurong 
Published: December 2024

Abstract
Carbon nanotube-based field-effect transistors (CNT-FETs) have been considered as an alternative to traditional Si-based metal–oxide–semiconductor FETs. Here we investigate the electrostatic discharge (ESD) failure characteristics of single-walled CNT (SWCNT) FETs. In an ESD event, the instantaneous high current will generate a certain amount of heat in the CNT-FET channel, resulting in its thermal failure owing to its randomly aligned SWCNT networks. The CNT-FET failure mechanism and its ESD characteristics with various key parameters are studied in detail. These insights provide new ideas and guidance for research into and application of CNT-FETs. In order to achieve a full chip ESD protection network for CNT chips, we refer to commonly used ESD devices in silicon-based processes and designed CNT-based ESD devices, including GD-CNT-FETs (gated-VDD CNT-FET) and RC-CNT-FET (RC-trigger CNT-FET). CNT-FETs with randomly aligned SWCNT networks, whose failure current level is only about 50 µA µm−1, need a larger area to achieve effective ESD protection.
A light-emitting-diodes-integrated silicon carbide insulated gate bipolar transistor
Authors: Zhang Guoliang , Shen Zhanwei , Wang Zhijie , Chen Yujian , Qiu Yufeng , Zhang Feng , Zhang Rong 
Published: December 2024

Abstract
A light-emitting-diodes (LEDs)-integrated silicon carbide (SiC) insulated gate bipolar transistors (LI-IGBT) is proposed in this paper. The novelty of the LI-IGBT depends on the photogeneration effect of III-nitride LEDs embedded in the poly-Si regions of IGBT. Then, the photogenerated carriers are formed in the JFET region and the drift layer, indicating the increase of the conductivity in LI-IGBT as compared with the SiC IGBT with hole-barrier layer (H-IGBT) and the SiC IGBT with charge storage layer (CSL-IGBT). The static simulation results show that the electron density of the LI-IGBT at the middle of the drift layer is separately 17.44 times and 15.81 times higher than those of the H-IGBT and CSL-IGBT, yielding 40.91% and 37.38% reduction of forward voltage drop, respectively, and also, the LI-IGBT shows 304.59% and 263.67% improvements in BFOM as compared with CSL-IGBT and H-IGBT, respectively. For the dynamic simulation in one cycle, the loss of LI-IGBT is separately reduced by 6.57% and 8.57% compared to H-IGBT and CSL-IGBT. Meanwhile, the relationship between VC(sat) and Eturn-off can be optimized by adjusting collector doping and minority carrier lifetime. These results reveal that the proposed SiC IGBT will be more suitable for ultra-high voltage application.
A novel approximation method for two dimensional phase transfer problem in a moving domain with heat generation parameter
Authors: Joshi Jaya , Rajeev  , Gómez-Aguilar J F , Lavín-Delgado J E 
Published: December 2024

Abstract
This study presents a two dimensional mathematical model of heat transfer process, describing the melting process in a moving domain, which deals with the effect of temperature dependent heat generation and absorption. In many physical processes, as materials undergo phase change, they experience heat generation or heat loss as a result of various internal mechanisms including chemical transformations and Joule heating. Therefore, it is necessary to incorporate the effect of internal heat variations for ensuring the accuracy of phase transfer process. This study also addresses the consequences of time dependent boundary temperature. Another major finding of this study includes the development of a hybrid numerical technique based on the operational matrix of Vieta-Fibonacci polynomials with heat balance integral method (HBIM) to determine the solution of the considered two dimensional heat transfer process in a moving domain. Since, the exact solution of this complex problem is not yet possible. Therefore, a comparison between the obtained results and exact solution for a specific one- dimensional case is presented, which reveals that both results are nearly identical. The consequences of heat generation and heat absorption on the temperature profile and melting curve are shown graphically.