bluuebunny/crossref_metadata_2025_split huggingface dataset:
Maximizing the Electron Microscopy Contrasts for Analysis
Authors: Toh Suey Li , Ji Rong 
Published: December 2020

Abstract
To characterize materials or devices in the next generation cutting-edge technologies, it is becoming more essential to carry out comprehensive characterization of the samples with a system that can provide a wealth of various contrast information. By analyzing the different signals detected at different angular scattering distribution, it can reveal tremendous information from the samples. Coupled with the superior detection capability, we have demonstrated the capability to enhance the fault isolation methodology of memory devices or media grain size analysis by optimizing various parameter settings. The effects of conditions (accelerating voltage, working distance, detector, probe current etc.) that can influence the trajectory pathways or yield of the different emitted signals would be discussed in the paper.
In-Line Electron Beam Inspection of High Aspect-Ratio RMG FINFET Gate
Authors: Hafer Richard F. , Patterson Oliver D. , Gow Cathy , McKindles Derek , Hsieh Brian Yueh-Ling , Tang Xiaohu 
Published: December 2020

Abstract
For a recent replacement metal gate (RMG) technology using a SOI substrate, residue from the dummy gate formed a defect that affected the RMG formation. In this FINFET technology, the high aspect ratio of the gate makes removing the dummy gate very difficult. Residue is left behind, especially in multi-fin structures. This residue was poorly detected by existing Broad-Band-Plasma inspection and thus required Electron Beam Inspection. However, this physical inspection is challenging due to high aspect ratio of the gate and an insulating wafer surface. The defect was verified using TEM, and careful sample prep is shown to be critical to verify the defect. The high aspect ratio and insulating sample in a charged-particle inspection is investigated with Monte-Carlo (MC) simulations.
Techniques in Extracting CSP Device from Underfilled PCB Module and Performing Solder Rework and Reballing for ATE Testing
Authors: Cheong Kah Chin 
Published: December 2020

Abstract
The application of underfill materials for board level assembly has been increasing rapidly in semiconductor industry to enhance strength and reliability performance of semiconductor components in harsh environments. However, due to the intractability of the capillary underfill after curing, extracting a chip scale package (CSP) device from a printed circuit board (PCB) with a combination of mold compound and capillary underfill for ATE testing has become difficult and challenging. This poses a severe limitation to this technology regarding electrical testing and failure analysis. In order to address the challenge in extracting a CSP device from an underfilled PCB without inducing any mechanical damage, a series of sample preparation techniques has been introduced. This paper discusses the techniques in removing the fine pitch CSP device from underfilled PCB module in a relatively simple way which includes application of chemical solutions, de-soldering, residual solder remnants cleaning and reballing. The established process enables ATE testing, electrical testing and failure analysis to be performed on any CSP devices. An electrical evaluation on the efficiency of a CSP device after a series of sample preparation processes will also be highlighted.
Improved Phase Data Acquisition for Thermal Emissions Analysis of 2.5D IC
Authors: Zee Bernice , Qiu Wen , Foo Fangjie , Lai Brian , Vickers Jim , Tien David 
Published: December 2020

Abstract
Lock-in thermography (LIT) phase data is used to generate phase shift versus applied lock-in frequency plots to estimate defect depth in semiconductor packages. Typically, samples need to be tested for an extended time to ensure data consistency. Furthermore, determining the specific point on the thermal emission site to collect data from can be challenging, especially if it is large and dispersive. This paper describes how the use of new computational algorithms along with streamlined and automated workflows, such as self-adjusting thermal emission site positioning and phase measurement auto-stop, can result in improvements to data repeatability and accuracy as well as faster time to results. The new software is applied to generate the empirical phase shift versus applied lock-in frequency plot using 2.5D IC devices with known defect location. Subsequently, experimental phase shift data from reject 2.5D IC devices with unknown defect locations are obtained and compared against the empirical phase shift plot. The defect Z-depth of these devices are determined by comparing where the experimental phase shift data points lies with respect to empirical phase shift plot and validated with physical failure analysis (PFA).
Pattern Matching Rule Ranking Through Design of Experiments and Silicon Validation
Authors: Rajavendra Reddy Gaurav , Wallner Jin , Babich Katherina , Makris Yiorgos 
Published: December 2020

Abstract
Continued technology scaling has led to exposure of many ‘weak-points’ in the designs fabricated in some of the most advanced technology nodes. Weak-points are certain layout patterns which are found to be sensitive to process non-idealities and have a higher tendency to cause defects. They may be coded in the form of Pattern Matching (PM) rules and included within the Design for Manufacturability Guidelines (DFMGs) to ensure product manufacturability. Often, during Integrated Circuit (IC) design, a trade-off is made between meeting performance specifications and complying with DFMGs. As a result, designs may reach the foundry with some DFMG violations. Fixing such violations generally causes a ‘ripple effect’ where one change requires many changes in other metal layers, making the process tedious. Therefore, providing a ranked list of guidelines to the designers helps them in assessing the criticality of violations, prioritizing, and fixing them accordingly. Past research suggests using diagnosis data to determine the impact of DFMG violations. However, this is a reactive approach wherein DFMGs are ranked only based on their hard-defect causing nature. To make the ranking process more robust, we propose a proactive silicon validation based approach which not only considers the yield loss due to hard-defects but also takes into account the parametric and reliability degradation caused by DFMG violations. We evaluate the effectiveness of the proposed methodology through on-silicon experiments on an advanced Fully-Depleted Silicon-On-Insulator (FD-SOI) technology node.
WLCSP Laminate Removal Using NIR Laser
Authors: Khoo Chun Haur 
Published: December 2020

Abstract
Driven by the cost reduction and miniaturization, Wafer Level Chip Scale Packaging (WLCSP) has experienced significant growth mainly driven by mobile consumer products. Depending on the customers or manufacturing needs, the bare silicon backside of the WLCSP may be covered with a backside laminate layer. In the failure analysis lab, in order to perform the die level backside fault isolation technique using Photon Emission Microscope (PEM) or Laser Signal Injection Microscope (LSIM), the backside laminate layer needs to be removed. Most of the time, this is done using the mechanical polishing method. This paper outlines the backside laminate removal method of WLCSP using a near infrared (NIR) laser that produces laser energy in the 1,064 nm range. This method significantly reduces the sample preparation time and also reduces the risk of mechanical damage as there is no application of mechanical force. This is an effective method for WLCSP mounted on a PCB board.
Quantitative Imaging of Carrier Distribution in Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy
Authors: Hirose Kotaro , Cho Yasuo , Tanahashi Katsuto , Takato Hidetaka 
Published: December 2020

Abstract
The carrier distribution in solar cell is important evaluation target. Scanning nonlinear dielectric microscopy is applied to the cross section of phosphorus implanted emitter in monocrystalline silicon solar cell and visualizes the carrier distribution quantitatively. The effective diffusivities of phosphorus are estimated from the experimental results. Then, the three-dimensional carrier distribution is simulated. The experimental and simulation results show good correlation.
Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies
Authors: Kodali Satish , Zhe Chen , Khiam Oh Chong 
Published: December 2020

Abstract
Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.
NanoProbing on 7 nm FinFET Devices in an SRAM Array: Challenges and Solutions
Authors: Qiu Anqi , Lowe William , Arora Mridul 
Published: December 2020

Abstract
Nanoprobing systems have evolved to meet the challenges from recent innovations in the semiconductor manufacturing process. This is demonstrated through an exhibition of standard SRAM measurements on TSMC 7 nm FinFET technology. SEM based nanoprober is shown to meet or exceed the requirements for measuring 7nm technology and beyond. This paper discusses in detail of the best-known methods for nanoprobing on 7nm technology.
Nanoprobing of Advanced Silicon-On-Insulator Transistors
Authors: Larentis Stefano , Erington Kent , Garcia Jose Z. , Ly Khiem , Dickson Kris , Chrastecky Tony , Heineke Steve , Gomez Nelson , Subramanian Sam 
Published: December 2020

Abstract
As advanced silicon-on-insulator (SOI) technology becomes a more widespread technology offering, failure analysis approaches should be adapted to new device structures. We review two nanoprobing case studies of advanced SOI technology, detailing the electrical characterization of a compound gate-to-drain defect as well as the characterization of unexpected SOI source-to-well leakage.
Statistical Failure Analysis for Non-Parametric Characteristic in DRAM
Authors: Oak Myunghoon , Lee Jongbum , Bae Jungwon , Kyungrak-Cho  , Minju-Shin  , Park Choongsun , Park Sunghoon , Hwang Hongsun , Oh Taeyoung , Kim Jonghoon , Lee Jungbae 
Published: December 2020

Abstract
Rapid and accurate root cause analysis of the defect contributes to improvement in yield and quality in semiconductor manufacturing system. In particular, imperfection of final test can cause major problems for customers, so analysis on root cause of final test failure is important activity for high quality. It can be started with finding first test data which is highly correlated with final test failure. However, it is difficult to analyze the correlation of first test data and final test failures because the first test is made up of hundreds of test items, and the data also show non-parametric characteristics with extreme outlier. In this study, Kolmogorov-Smirnov test (K-S test), which is a non-parametric test method, is statistically applied to the first test data. The K-S test is intuitive and descriptive, which makes it easy to analyze the root cause. And K-S test showed a performance improvement compared to t-test statistic, which requires a normal distribution assumption. Therefore, our data mining approach can help analysis to improve yield and quality of mass production with highly scaled devices.
Biophysical Characterization of a Novel SCN5A Mutation Associated With an Atypical Phenotype of Atrial and Ventricular Arrhythmias and Sudden Death
Authors: Ghovanloo Mohammad-Reza , Atallah Joseph , Escudero Carolina A. , Ruben Peter C. 
Published: December 2020

BackgroundSudden cardiac death (SCD) is an unexpected death that occurs within an hour of the onset of symptoms. Hereditary primary electrical disorders account for up to 1/3 of all SCD cases in younger individuals and include conditions such as catecholaminergic polymorphic ventricular tachycardia (CPVT). These disorders are caused by mutations in the genes encoding cardiac ion channels, hence they are known as cardiac channelopathies. We identified a novel variant, T1857I, in the C-terminus of Nav1.5 (SCN5A) linked to a family with a CPVT-like phenotype characterized by atrial tachy-arrhythmias and polymorphic ventricular ectopy occurring at rest and with adrenergic stimulation, and a strong family history of SCD.ObjectiveOur goal was to functionally characterize the novel Nav1.5 variant and determine a possible link between channel gating and clinical phenotype.MethodsWe first used electrocardiogram recordings to visualize the patient cardiac electrical properties. Then, we performed voltage-clamp of transiently transfected CHO cells. Lastly, we used the ventricular/atrial models to visualize gating defects on cardiac excitability.ResultsVoltage-dependences of both activation and inactivation were right-shifted, the overlap between activation and inactivation predicted increased window currents, the recovery from fast inactivation was slowed, there was no significant difference in late currents, and there was no difference in use-dependent inactivation. The O’Hara-Rudy model suggests ventricular after depolarizations and atrial Grandi-based model suggests a slight prolongation of atrial action potential duration.ConclusionWe conclude that T1857I likely causes a net gain-of-function in Nav1.5 gating, which may in turn lead to ventricular after depolarization, predisposing carriers to tachy-arrhythmias.
Are more GPs associated with a reduction in emergency hospital admissions? A quantitative study on GP referral in England
Authors: Nicodemo Catia , McCormick Barry , Wittenberg Raphael , Hobbs FD Richard 
Published: December 2020

BackgroundRecent studies have found an association between access to primary care and accident and emergency attendances, with better access associated with fewer attendances. Analyses of an association with emergency admissions, however, have produced conflicting findings.AimThis study investigated whether emergency admission rates in an area are associated with 1) the number of GPs, and 2) mean size of GP practice.Design and settingAnalysis was conducted utilising Hospital Episode Statistics, the numbers of GPs and GP practices, Office for National Statistics population data, Quality and Outcomes Framework prevalence data, and Index of Multiple Deprivation data, from 2004/2005 to 2011/2012, for all practices in England.MethodRegression analysis of panel data with fixed effects to address 1) a potential two-way relationship between the numbers of GPs and emergency admissions, and 2) unobservable characteristics of GP practices.ResultsThere is not a statistically significant relationship between the number of GPs in a primary care trust area and the number of emergency admissions, when analysing all areas. In deprived areas, however, a higher number of GPs is associated with lower emergency admissions. There is also a lower emergency admission rate in areas in which practices are on average larger, holding GP supply constant.ConclusionAn increase in GPs was found to reduce emergency admissions in deprived areas, but not elsewhere. Areas in which GPs are concentrated into larger practices showed reduced levels of emergency admissions, all else being equal.
Penegakan Hukum terhadap Pencemaran Lingkungan di Sungai Cikijing, Jawa Barat Akibat Aktivitas Industri Tekstil PT. Kahatex
Authors: Sihombing Agung Kurniawan 
Published: December 2020

AbstrakHak untuk mendapatkan lingkungan hidup yang baik dan sehat merupakan hak fundamental manusia yang diatur dalam Undang-undang Dasar 1945 dan peraturan perundang-undangan di bawahnya. Di sisi lain, negara membutuhkan pembangunan sebagai upaya dalam memajukan negaranya. Sayangnya, kedua hal ini sulit berjalan beriringan secara optimal. Hal ini dikarenakan pemenuhan hak atas lingkungan yang baik dan sehat sering kali terhambat oleh aktivitas industri yang tidak bertanggung jawab. Contohnya, hal ini dapat dilihat pada kasus pembuangan limbah tekstil PT. Kahatex di Kabupaten Bandung yang telah mencemari Sungai Cikijing di Rancaekek, Jawa Barat. Meski izin pembuangan limbahnya telah dicabut, PT. Kahatex masih terlihat melaksanakan aktivitasnya dengan dampak pencemaran lingkungan yang masih berkelanjutan. Lebih lanjut, Bupati Sumedang tidak berani menghentikan operasi perusahaan tersebut mengingat jumlah karyawan PT. Kahatex yang terancam kehilangan pekerjaan. Oleh karena itu, tulisan ini bertujuan untuk menganalisis permasalahan lingkungan yang ada serta memberikan saran terhadap penegakan hukum yang sebaiknya dilakukan. Kata kunci: Cikijing, industri, lingkungan, penegakan hukum, PT. KahatexAbstractThe right to a good and healthy environment is a fundamental right which is regulated in the Indonesian Constitution and the regulations below it. On the other hand, the state needs development to make the people prosperous. However, these two concepts are difficult to go hand in hand optimally. This due to the right to a good and healthy environment is often hampered by irresponsible industrial activities. For example, this could be seen in textile waste disposal by PT. Kahatex in Bandung Regency which has polluted the Cikijing River in Rancaekek, West Java. Although the waste disposal permit has been revoked, PT. Kahatex was still carrying out its activities. Moreover, The Sumedang Regent did not have the courage to stop the company's operations, considering the number of employees from PT Kahatex is threatened to be jobless. Therefore, this paper aims to analyze existing environmental problems and suggests recomendation for the law enforcement.Keywords: Cikijing, industry, environment, law enforcement, PT. Kahatex
Measurement report: Long-term variations in carbon monoxide at a background station in China's Yangtze River Delta region
Authors: Chen Yijing , Ma Qianli , Lin Weili , Xu Xiaobin , Yao Jie , Gao Wei 
Published: December 2020

Abstract. This study analyzed the long-term variations in carbon monoxide (CO) mixing
ratios from January 2006 to December 2017 at the Lin'an regional atmospheric
background station (LAN; 30.3∘ N, 119.73∘ E, 138 m a.s.l.) in China's Yangtze River Delta (YRD) region. The CO mixing ratios
were at their highest (0.69 ± 0.08 ppm) and lowest (0.54 ± 0.06 ppm) in winter and summer, respectively. The average daily variation in CO
exhibited a double-peaked pattern, with peaks in the morning and evening and
a valley in the afternoon. A significant downward trend of −11.3 ppb yr−1 of
CO was observed from 2006 to 2017 at the LAN station, which was in
accordance with the negative trends of the average CO mixing ratios and
total column retrieved from the satellite data (Measurements of
Pollution in the Troposphere, MOPITT) over the YRD region during the same
period. The average annual CO mixing ratio at the LAN station in 2017 was
0.51 ± 0.04 ppm, which was significantly lower than that (0.71 ± 0.12 ppm) in 2006. The decrease in CO levels was largest in autumn (−15.7 ppb yr−1), followed by summer (−11.1 ppb yr−1), spring (−10.8 ppb yr−1), and
winter (−9.7 ppb yr−1). Moreover, the CO levels under relatively polluted
conditions (the annual 95th percentiles) declined even more rapidly (−22.4 ppb yr−1, r=-0.68, p<0.05) from 2006 (0.91 ppm) to 2017 (0.58 ppm), and the CO levels under clean conditions (the annual 5th percentiles)
showed decreasing evidence but not statistically significant (r=-0.41, p=0.19) throughout the years. The long-term decline and
short-term variations in the CO mixing ratios at the LAN station were mainly
attributed to the implementation of the anthropogenic pollution control
measures in the YRD region and to events like the Shanghai Expo in 2010 and
Hangzhou G20 in 2016. The decreased CO level may influence atmospheric
chemistry over the region. The average OH reactivity of CO at the LAN
station is estimated to significantly drop from 4.1 ± 0.7 s−1 in
2006 to 3.0 ± 0.3 s−1 in 2017.
Human Health Consequences of Endocrine-Disrupting Chemicals
Authors: M. Heshmati Hassan 
Published: December 2020

Daily use of chemicals is an essential part of modern life. Endocrine-disrupting chemicals (EDCs) are a heterogeneous group of exogenous chemicals or chemical mixtures that interfere with the action of hormones and consequently cause adverse effects to humans and wildlife. The number of EDCs has markedly increased over the past 60 years. Humans are constantly exposed to hundreds of EDCs mainly through air, water, and food. Exposure to EDCs (in utero or lifetime) may be a significant component of the environmental origin of several medical conditions. The developing fetus and neonate are more sensitive than adults to perturbation by EDCs. The prenatal damage can cause adverse consequences later in life (developmental origins of adult disease). In many cases, the damage is irreversible. There is also a possibility of transgenerational effects. By interfering with hormonal functions, EDCs can contribute to a variety of dysfunctions and diseases including obesity, diabetes, reproductive disorders, and cancers. Information on long-term effects of chronic, low-dose exposure to EDCs is relatively limited. EDCs represent a global threat for human health and cause a high cost for the society. Promoting public knowledge and initiating preventive measures will help minimizing the health and economic consequences of EDCs for future generations.
Public Libraries Respond to the COVID-19 Pandemic, Creating a New Service Model
Authors: Goddard Jon 
Published: December 2020

During the COVID-19 pandemic, public libraries have demonstrated, in many ways, their value to their communities. They have enabled their patrons to not only resume their lives, but to help them learn and grow. Additionally, electronic resources offered to patrons through their library card have allowed people to be educated and entertained.
The credit must go to the librarians, who initially fueled, and have maintained this level of service by re-writing the rules—creating a new service model.