bluuebunny/crossref_metadata_2025_split huggingface dataset:
Lattice Fringe Visibility after Tilt
Authors: Qin W , Fraundorf P 
Published: July 2020

Abstract
Factors that affect the visibility of lattice fringes include crystal orientation and thickness, as well as instrument response. As a crystal gets smaller, lattice fringes stay visible for larger deviations from the Bragg condition. Hence the persistence of fringes under tilt affects the abundance and range of lattice spacings (and angles) that one sees in an image of randomly-oriented crystals. A subset of the fringes in an image are “still-visible” after large (e.g. 35°) single or double axis tilts. If one is looking for “new-fringes” from the same crystal (e.g. to analyze it's 3D lattice parameters), rules for recognizing redundant fringes might also help out.
Here we examine a semi-empirical model for predicting the visibility of lattice fringes after tilt, by connecting the visibility to intersection of the corresponding crystal reciprocal-lattice spot with the illuminating Ewald sphere.
Spectrum Imaging: Microanalysis for a New Millennium
Authors: Anderson IM 
Published: July 2020

Abstract
Spectrum imaging, where a full spectrum is acquired at each pixel in a two-dimensional array, provides a new paradigm for materials characterization that combines the advantages of traditional paradigms for imaging and analysis in electron optical characterization. Traditionally, electron optical imaging (e.g., secondary electron imaging of electron-opaque or bright-field imaging of electron-transparent specimens) emphasizes contrast production among distinct features of the microstructure. An excellent survey of the specimen microstructure is achieved - many pixels are acquired - but typically no quantitative analysis of image intensities is performed. In contrast, electron optical analysis techniques traditionally concentrate on quantitative elemental analysis (e.g., electron probe microanalysis), or at least comprehensive qualitative analysis through full spectrum acquisition (e.g., energy-dispersive X-ray or electron energy-loss spectrometry). However, these analyses are typically performed at only a few locations on the specimen, which are pre-selected on the basis of the image contrast generated as described above.
Information Extraction: Statistical Analysis to Get the Most from Spectrum Images
Authors: Kotula P G , Keenan M R 
Published: July 2020

Abstract
As more x-ray energy dispersive spectroscopy (EDS) manufacturers begin to offer spectrum imaging (a complete x-ray spectrum from each pixel in an image), there is a clear need for robust and automated methods for quickly extracting the relevant information from the large spectrum image data sets. A typical spectrum image may consist of 100 x 100 pixels (10000 spectra) each with 1000 channels which (when stored at double precision) is 80 Mbytes. It is clear that a large four-dimensional data set such as this cannot be viewed in its entirety and the time to analyze individual spectra by hand is prohibitive. Conventional analysis of spectrum images by mapping energy windows is useful as a first pass only for finding the elements present and only if at sufficient concentrations. Additional problems with mapping include systematic overlaps of other x-ray peaks, changes in the background shape and displaying the maps so they faithfully portray the actual signal intensity.
Prospects and Limitations of Energy Filtering TEM in Spectrum Imaging Analysis
Authors: Mayer J , Pidun M , Karduck P , Zern A , Hahn K 
Published: July 2020

Abstract
The increasing number of energy filtering transmission electron microscopes (EFTEMs) has given many microscopists the ability to apply the fast and very efficient tool of electron spectroscopic imaging (ESI) for analytical characterisation, rather than to record EELS spectra. In a more general framework, the new ESI methods and the standard PEELS technique both aim at exploring the same three-dimensional data space. This data space is represented by the spatial co-ordinates x, y and the energy loss ΔE. The resulting intensity distribution I(x,y, ΔE) is frequently referred to as a spectrum image and the experimental techniques to acquire the corresponding data are referred to as spectrum imaging. The actual analysis can either be based on recording PEELS spectra for a twodimensional array of probe positions, or on recording series of energy filtered images across inner shell loss edges or in the low loss region.
PC/MAC* Image Processing Freeware for Examining Spectral Images
Authors: Bright D S 
Published: July 2020

Abstract
MacLispix, a public domain image processing system for the Macintosh*, has been applied to a variety of image processing problems, such as using Principal Component Analysis to explore correlated images. The tools provided by MacLispix are now available in Lispix, the updated version that runs on both the PC and the Macintosh.
I will illustrate the utility of Lispix by way of an example ‘data cube', a low voltage energy dispersive x-ray spectrum image provided by Ian Anderson. The ‘cube'is 200x150 pixels, each pixel having a spectrum of 512 two-byte channels The spectra were smoothed and reduced by adding adjacent channels to reduce them to 256 channels each. Since Lispix is image oriented rather than spectrum oriented, the reduced cube is stored, and represented internally as 256 images (one image for each channel in the spectrum), rather than as 200x150 spectra (one spectrum for each pixel in the image).
Atomic Resolution Imaging of Thin Film Interfaces
Authors: Larson D J , Clifton P H , Martens R L , Cerezo A , Kelly T F , Petford-Long A K , Smith G D W , Tabat N 
Published: July 2020

Abstract
In recent years there has been a high degree of interest in multilayer film (MLF) structures because of their applications as magnetoresistive sensors and as memory elements in magnetoresistive random access memory arrays. As each of the layers in a spin-valve-based MLF structure1 is only a few nanometers in thickness, the morphology of the layers is crucial in controlling the magnetic and transport properties of the devices. In general, the microstructural features that can influence the film properties include layer roughness, layer composition, interfacial chemical mixing, grain size, grain boundary morphology, and crystallographic orientation, with the most important microstructural parameter being the nature of the interfaces between adjacent layers. With so many internal interfaces, each of which can have a different morphology and degree of intermixing, it is extremely difficult to determine the nature of each individual interface unless a technique is used that can analyze them independently, and with high spatial resolution.
In-Situ TEM Investigation of the Solid/Liquid Interface in Al-Si Alloys
Authors: Storaska Garrett A , Howe James M 
Published: July 2020

Abstract
The solid/liquid interface is a junction between two condensed phases with completely different atomic arrangements. At the interface between the periodically ordered solid and the amorphous liquid, the atoms adopt a structure that minimizes the excess energy due to the abrupt change between the surrounding phases. Faceted and diffuse interfaces describe two extremes in morphology of a solid/liquid interface. In a faceted interface, the change from solid to liquid occurs over one atomic layer, however periodic order extends into the first few liquid layers adjacent to the crystalline solid, as predicted by numerous models.1 The faceted interface advances by nucleation and growth of ledges on the interface. A diffuse interface has a structure in which the change from solid to liquid occurs over several atomic layers. This interface contains many ledges to which liquid atoms may attach continuously as the interface advances.
Synthesis of CaCO3 Thin Films via a Bioinspired Strategy: Cooperative Template-Inhibition
Authors: Xu Guofeng , Yao Nan , Aksay Ilhan A , Groves John T 
Published: July 2020

Abstract
Exquisite control over the morphology of inorganic materials is well demonstrated in biological mineralization. An elegant example is the mulluscan nacre, in which aragonite (a polymorph of calcium carbonate) forms as thin films of about 0.5|im thick between organic matrices as a result of an interplay between templating and inhibition (Figure 1). Not surprising, biomineralization has inspired many recent research efforts in biomimetic materials synthesis, especially the synthesis of inorganic thin films. The majority of these efforts have exclusively focused on exploring the promoting effect on mineral formation by templates. A major drawback of this approach is the lack of control over the mineral growth in the direction normal to the template, which often leads to the formation of discrete patches instead of a true film. In this report, we describe a strategy which takes advantage of the interplay between templating and inhibiting, as utilized by organisms, to synthesize macroscopic and continuous CaCO3 thin films.
An Amorphous to Crystalline Transition in the Formation of CaCO3 Thin Films
Authors: Xu Guofeng , Yao Nan , Aksay Ilhan A , Groves John T 
Published: July 2020

Abstract
Calcium carbonate is one of the most abundant biominerals. Organisms have developed sophisticated controls over its polymorph, morphology and orientation through protein matrices. However, there are many unknowns as to how the matrices affect the crystallization process, in particular, the initial nucleation. A prevailing view is that crystals form via epitaxy from the templates. Alternatively, a crystalline phase could form through a multistep phase transformation, initiated by the formation of an amorphous phase. Since the amorphous phase is more soluble than the stable crystalline phase, it should be the first solid phase formed during the crystallization and therefore could be prevalent in biomineralization. In fact, amorphous phase minerals have been identified in many organisms and more recent discoveries have suggested that amorphous calcium carbonate is more widespread than commonly supposed in biology, but has been overlooked due to the difficulty of identifying an amorphous phase in the presence of a crystalline phase of the same composition.
Strain Field Distribution in Submicron Devices by TEM/CBED. A European Project
Authors: Armigliato A , Balboni R , Carnevale G P , Colpani P , Frabboni S , Pavia G 
Published: July 2020

Abstract
It is now widely accepted that one of the major issues for the future deep sub-micron integrated circuit (IC) technologies regarding yield, device performance and stability and device and product reliability, is the mechanical stress built up in the layers and substrate. It is therefore important to give a quantitative account of these stresses and this can only be achieved by disposing of reliable, performant (as to spatial resolution) and quantitative techniques for the local stress determination in the substrate, of adequate and dedicated process simulation tools and of sensitive methods to analyse the stress effects on device performance.
The only experimental technique presently available which allows the strain field distribution in sub-micron CMOS devices is the convergent beam electron diffraction technique of the transmission electron microscopy. Its sensitivity is of the order of 10-4 and its spatial resolution is of 1 nm if a TEM/FEG is employed.
Quantitative Analysis of Si1-xGex using Convergent Beam Electron Diffraction for Extinction Distance Measurements.
Authors: Delille D , Pantel R , Vincent G , Van Cappellen E 
Published: July 2020

Abstract
Introduction
SiGe epitaxy on Si has been extensively studied, for semiconductor gap modeling and band structure engineering. Quantitative measurement of the Ge concentration is not a trivial exercise at the microscopic level, where classical tools such as X-Ray diffraction, ellipsometry and SIMS cannot be used. A new quantitative microanalytical technique is proposed based on extinction distance measurements using Convergent Beam Electron Diffraction (CBED) combined with dynamical diffraction simulations. A Ge concentration accuracy of less than 2% is demonstrated on strain relaxed SiGe epitaxial layers.
Experiment
Unstrained SiGe epitaxial layers are analyzed for different Ge concentrations, with two-beam CBED, using the transmitted and the 004 diffracted disc. Energy filtered CBED patterns are acquired at 197 keV with a Philips CM 200 FEG transmission electron microscope, using the Ik x Ik CCD camera of the Gatan GIF energy filter. A liquid nitrogen cryo-holder is used, to sharpen up the CBED patterns and to avoid contamination and degradation of the samples.
Defect Dynamics in Simox Structures as a Function of the Annealing Parameters
Authors: Tan Yan , Johnson Benedict , Seraphin Supapan , Anc Maria J 
Published: July 2020

Abstract
Advanced semiconductor devices on the SIMOX (Separation by IMplanted OXygen) substrate have many advantages including high-speed, large packing density and low power consumption. SIMOX consists of a layer structure generated by oxygen ion implantation into silicon wafers. The implantation process introduces a high density of defects that can be reduced by post-implantation annealing. Decreasing the oxygen dose not only reduces the cost but also decreases the damage to the top Si layers. Low-dose implantation results in thinner buried oxide (BOX) layer, in contrast to traditional high-dose SIMOX. The BOX layer formation mechanism is different for low-dose SIMOX from that of high-dose. For a high-dose SIMOX, the BOX layer is already formed by implantation. However, for a low-dose, a number of oxide precipitates are formed during implantation. The larger precipitates grow at the expense of smaller ones until they coalesce to the BOX layer during annealing. This step is known as Ostwald ripening, which is responsible for the thin BOX formation.
Non Destructive Determination of the Threading Dislocation Density of Smooth Simox Substrates using Atomic Force Microscopy
Authors: Domenicucci A , Murphy R , Sadanna D , Klepeis S 
Published: July 2020

Abstract
Atomic force microscopy (AFM) has been used extensively in recent years to study the topographic nature of surfaces in the nanometer range. Its high resolution and ability to be automated have made it an indispensable tool in semiconductor fabrication. Traditionally, AFM has been used to monitor the surface roughness of substrates fabricated by separation by implanted oxygen (SIMOX) processes. It was during such monitoring that a novel use of AFM was uncovered.
A SIMOX process requires two basic steps - a high dose oxygen ion implantation (1017 to 1018 cm-3) followed by a high temperature anneal (&gt;1200°C). The result of these processes is to form a buried oxide layer which isolates a top single crystal silicon layer from the underlying substrate. Pairs of threading dislocations can form in the top silicon layer during the high temperature anneal as a result of damage caused during the high dose oxygen implant.
Effect Of Capping Layer During Annealing of Low-Dose Lowenergy Simox Materials
Authors: Johnson B , Anderson P , Tan Y , Seraphin S , Anc M 
Published: July 2020

Abstract
Ultra-thin Silicon-On-Insulator (SOI) materials are becoming increasingly attractive for fabrication of ultra-large scale integrated (ULSI) devices due to their performance, speed, and power reduction advantages [1]. In SIMOX (Separation by IMplanted OXygen) materials, extensive damage can be repaired by high-temperature annealing in an argon ambient. A small percentage of oxygen is added to give a sufficient oxygen partial pressure to prevent formation of silicon monoxide lumps and subsequent pits [2]. Capping the sample surface to prevent external thermal oxidation during annealing is important to preserve the thickness of the top silicon layer. This is particularly critical for the ultra-thin SIMOX produced by the low-dose low-energy process. However, the surface capping also affects the formation of the buried oxide (BOX). To study this effect, two sets of samples implanted at the same doses of 1.5, 2.0, 2.5, and 3.0x 1017O+ /cm2 at 65keV were annealed with or without protective cap on the sample surface.
Crystallographic Features and Subband Transitions of Al/InAs Metal-Semiconductor Junctions
Authors: Zhang JP , Tsujino S , Thomas M , Allen SJ 
Published: July 2020

Abstract
To study the nature of metal-semiconductor junction, metal-clad InAs quantum wells with aluminum deposited on 15-nm thick InAs grown on (100) GaAs with AlSb barrier were prepared by an in-situ method (aluminum was grown immediately by molecular beam epitaxy) and by an ex-situ method (aluminum was deposited after exposing InAs surface in ambient condition by selective etching). Cross sectional TEM studies indicated that the Al grains in the clad aluminum layer were randomly arranged in the ex-situ grown junctions, while, in the in-situ samples, the aluminum grains were found to be well oriented to the underlying InAs.
When the interface is viewed along [Oil], three observed crystallographic relationships for in-situ Al growth are
1. [011]AI // [011]InAs and (100)AI // (100)InAs as shown in Fig. 1(a): the aluminum grains of facecentered cubic (fee) structure are perfectly aligned with the fee InAs lattice when they grow;
An SEM Investigation of Annealing Encapsulants for SiC
Authors: Ervin M H , Jones K A , Derenge M A , Kirchnef K W , Wood MC , Shah P B , Vispute R D , Venkatesan T , Thomas C , Spencer M G 
Published: July 2020

Abstract
Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.
Advancing Nanoscale Indentation Measurements Toward Quantitative Characterization of Polymer Properties
Authors: VanLandingham M , Villarrubia J , Meyers G , Dineen M 
Published: July 2020

Abstract
The ultimate objective of instrumented indentation testing is to obtain absolute measurements of material properties and behavior. To achieve this goal, accurate knowledge of the shape of the indenter tip is required. For indentation measurements involving sub-micrometer scale contacts, accurate knowledge of the tip shape can be difficult to achieve. In this presentation, a technique referred to as blind reconstruction is applied to the measurement of tip shapes of indenters used with the atomic force microscope (AFM) to indent polymeric materials.
The AFM has been used recently to make nanoscale indentation measurements and is particularly useful for evaluating the mechanical response of polymeric materials. These measurements can be made using AFM cantilever probes and operating the AFM in force mode with some modifications to account for lateral tip motion. Because the AFM was not specifically designed as an indentation device, other complications can arise due to instrumental uncertainties such as piezo hysteresis, piezo creep, and photodiode nonlinearities.
Ionic Nano-Aggregates in Polyethylene-Based Ionomers: Comparison of Stem and Saxs Results
Authors: Winey Karen I , Laurer Jonathan H , Kirkmeyer Brian P 
Published: July 2020

Abstract
Semicrystalline ionomers are industrially important materials in adhesives, packaging, engineering thermoplastics, coatings, and more. The most common of these are based on poly(ethylene-ran-methacrylic acid), E/MAA random copolymers partially neutralized with various cations and produced by DuPont under the tradename Surlyn®. In 1990, Register and Cooper described the morphology of semicrystalline ionomers as crystalline lamellae separated by an amorphous polymeric matrix that contains isolated cation-rich domains. Their anomalous small angle X-ray scattering experiments are consistent with the relative electron densities associated with this “three-phase” morphological model. Despite this agreement and the commercial importance of semicrystalline ionomers, a number of fundamental issues have remained unresolved regarding both the morphology of the ionic nanoaggregates and the efficiency of aggregation.
Recently, we have imaged the ionic aggregates using a scanning transmission electron microscope equipped with a field emission electron gun. This microscopy method offers the advantages of reduced phase contrast, high spatial resolution, and enhanced atomic number contrast relative to transmission electron microscopy.
Energy Filtering and Spectrum Imaging of Polymers
Authors: Aitouchen A , Taylor J , Crozier P , Libera M 
Published: July 2020

Abstract
Chemical imaging of polymeric materials is attractive, because of the inherently poor contrast typically afforded by multiphase amorphous polymers in bright-field imaging techniques. Spectrum imaging and energy-filtering approaches are being increasing applied to polymeric materials (1,2, 3).
One recent example from the Stevens group using a Philips CM20 FEG TEM/STEM interfaced to an EmiSpec Vision data acquisition/control system and a Gatan 666 PEELS spectrometer is presented in figure 1. The specimen is a PVP sphere on a holey-carbon TEM grid. The specimen was cooled to approximately -125 °C in a single-tilt cryo stage. Drift correction was implemented by collecting HAADF STEM images from the sub-image region indicated by the dashed white box at periodic intervals. Based on an autocorrelation with the initial image, electronic shifts where imposed to correct for drift. A 3-D spectrum dataset was generated from the 70 x 70 pixel box around the polymer particle at an interpixel spacing of 5 nm and a pixel dwell time of 1.5 sec.
Low Dose High Resolution Electron Microscopy (HREM) Analysis of Regularly Twisted Poly(m-Phenylene Diisophthalamide) (MPDI) Fibers
Authors: Kubel C , Lawrence DP , Martin DC 
Published: July 2020

Abstract
Poly(m-phenylene diisophthalamide) (MPDI) is an all-aromatic polyamide used to manufacture thermally stable high strength fibers (Nomex® by DuPont). The X-ray diffraction data of the commercial solution-spun fiber is in good agreement with a triclinic unit cell structure proposed by Kakida et al. with hydrogen bonds forming a two dimensional network approximately orthogonal to the polymer main chain. When MPDI dissolved in N,N-dimethylacetamide (DMAc) is crystallized over several weeks by exposure to a non-solvent (water) in a diffusion vessel, the polymer precipitates into uniform, regularly twisted crystalline bundles (Figure 1).
TEM images show that the bundles consist of 1-8 individual strands and can reach a length of 20 microns. The pitch and the diameter of these bundles are uniform along the visible length for each bundle but depend on the number of strands per bundle. The diameter of an individual strand is 20-50 nm resulting in a diameter of 20-300 nm for a bundle and a “macroscopic” pitch of 200-1000 nm (Figure 2).