bluuebunny/crossref_metadata_2025_split huggingface dataset:
Observation of Surface-Enhanced Raman Scattering from Strongly Coupled Molecules and Localized Surface Plasmons in Resonance
Authors: Murakoshi Kei , Nagasawa Fumika , Takase Mai 
Published: February 2020

The photoexcitation characteristics of materials have been investigated using surface enhanced Raman scattering (SERS) [1]. Signal enhancement by< 104 times of magnitude is caused by resonances that are induced by optical absorption. Previously documented studies have found that the absorption spectra of chromophores that were adsorbed to Au or Ag plasmonic nanoparticles can be strongly perturbed. This perturbation of the electronic transition should affect the SERS profiles in ways that differ from those predicted based on simple enhancement of the local electromagnetic field. Previously documented studies discussed about the SERS effect as involving transition dipole coupling between the chromophore and the metal, and also theoretical simulation including resonance coupling between the molecular electronic transition and the optical transition of the nanoparticles. Despite these attempts to research the Raman characteristics when the system achieved hybridized states, the Raman features in the strong coupling regime when using LSPR have not been clarified yet.
In this study, polarized Raman scattering measurement was carried out using a hybridized system of Ag nano-dimer structures and organic dye molecules. Tuning of the localized surface plasmon resonance energy leads to modulation of the hybridized polariton energy. The anti-crossing behavior of the polariton energy implies a strong coupling regime with maximum Rabi splitting energy of 385 meV. The observation proves the effective Raman enhancement via the excitation of the upper and the lower blanches of the hybridized states at the gap of the metal dimer. Maximum Raman enhancement was obtained at an optimized resonant energy between the hybrid states and Raman excitation.

Reference

[1] M. Takase, F. Nagasawa, H. Nabika, K. Murakoshi, “Single Molecule Surface-Enhanced Raman Scattering as a Probe for Adsorption Dynamics on Metal Surfaces", in Frontiers of Surface-Enhanced Raman Scattering: Single-Nanoparticles and Single Cells, Y. Ozaki, K. Kneipp, and R. P. Aroca, John Wiley & Sons, New York, (2014).
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Design and synthesis of ternary Ferrite/Graphene/polyaniline hierarchical nanocomposites for high-performance supercapacitors
Authors: Xiong Pan , Fan Ye 
Published: February 2020

As typical active electrode materials for pseudocapacitor, transition metal oxides, hydroxides, and conductive polymers possess multiple oxidation states/structures that enable rich redox reactions for pseudocapacitance generation. Spinel ferrite oxides (MFe2O4, M=Fe, Co, Ni, Cu, Mn) has been conceived as a promising cost-effective and scalable alternative for supercapacitor. It is expected that ferrite oxides (MFe2O4) may offer richer redox reactions, including contributions from both M and Fe ions, than those of the monometallic oxide. However, it is noted that the pure ferrite oxides cannot be conductive to satisfactory performance. A promising approach to enhance the performance is designing novel ferrite-based hybrids.
Conducting polymer, such as polyaniline (PANI) is usually used to hybrid with metal oxides to enhance the electronic conductivity and achieve higher capacitance, owing to its low cost, environmental compatibility, excellent electrical conductivity, large pseudo-capacitance, and fast doping/dedoping rate. However, the poor cycling stability is a noticeable shortcoming. Graphene is a rising star in supercapacitor owning to its extremely high specific surface area, superior mechanical properties, good electrochemical stability and high intrinsic electrical conductivity. Recently, a hierarchically ternary composites composed of carbon nanomaterials, conducting polymers and transition metal oxides have been explored. This novel ternary hybrids provide a new direction for the fabrication of the next generation high-performance electrochemical electrodes. Based on the above, it is of great interest to fabricate the ternary ferrite-based composites as an capacitor material. To the best of our knowledge, very few studies on the synthesis of ferrite-based hybrids have been reported so far, especially this intriguing ternary nanostructure.
Herein, we first reported ternary ferrite/graphene/PANI hybrid by a facile two-step method. This ternary nanostructures show enhanced electrochemical capacitance and improved cycling stability than those of the three separated components and their corresponding binary hybrids.
Effects of Anions, Cations and Supporting Electrolyte on the Electrochemistry and Spectroelectrochemistry of Neutral, Protonated and Deprotonated Free-Base Porphyrins in Nonaqueous Media
Authors: Kadish Karl M. , Cui Yan , Zeng Lihan , Fang Yuanyuan 
Published: February 2020

A series of free-base porphyrins were examined by electrochemistry and spectroelectrochemistry in nonaqueous media containing a variety of added anions or cations and different supporting electrolytes which were able to bind with the neutral and/or electrogenerated forms of the macrocycle. The investigated neutral porphyrins are represented as H2(P) while the protonated and deprotonated porphyrins are represented as [H4(P)]2+
, [H3(P)]+
, [
H(P)]-
and [(P)]2-
. The protonated porphyrins were generated by addition of an organic acid to solution, while the deprotonated porphyrins were formed by addition of base to give the compounds shown in Chart 1.
UV-vis spectra of the prophyrins were measured before, during and after the addition of different anions, cations and supporting electrolytes to solution. Cyclic voltammetry was used to measure the redox potentials for oxidation or reduction under the different solution conditions, while spectroelectrochemistry was used to monitor UV-vis spectra during each electron addition or electron abstraction. Formation constants for anion or cation binding were measured using both spectroscopic and electrochemical techniques. The measured shifts of absorption bands and shifts of reduction potentials were shown to vary with changes in the binding constants and this was markedly dependent upon both the nature of the porphyrin substituents and the porphyrin geometry, i.e., the planarity of the macrocycle. A proposed mechanism for anion and cation interaction with the free-base porphyrins will be presented.
Synthesis of Porphyrin Arrays and Investigation of Their Optical and Electrochemical Properties
Authors: Tamaki Takashi , Nosaka Takenori , Ogawa Takuji 
Published: February 2020

Porphyrin arrays have attracted much attention in a wide range of scientific applications such as in artificial photosynthetic antenna1, electronic devices, and single-molecule devices2. Although various synthetic methods have been reported, they are applicable only to the homologous porphyrin arrays; in addition, it is difficult to synthesize the elaborate porphyrin arrays with programmable order of each unit. Thus, we synthesized porphyrin dimers and trimers that have varying sequences of the porphyrin units via the consecutive Suzuki coupling reactions using the same key porphyrin compound. The use of the consecutive Suzuki coupling reactions for the effective syntheses of elaborate oligoarenes by repetition of the same reaction at each elongation step3, has been reported. In this work, the consecutive Suzuki coupling was applied for the synthesis of porphyrin arrays of various orders.
We synthesized two porhpyrins as the starting monomers: porhyrin 2 bearing a triflate group, and the key porphyrin 3 bearing a boronic ester and a hydroxyl group. Porphyrins 2 and 3 were synthesized in three and four steps, respectively. The Suzuki coupling reaction between 2 and 3 in various combinations afforded four different dimers, as denoted by 4 in Scheme 1. After triflation of the hydroxyl group of 4, a further coupling of 4 with 3 afforded five different trimers, as denoted by 6 in Scheme 1. The porphyrin monomers were synthesized in gram scale in one batch, and the coupling reactions afforded moderate to good yields. The optical and electrochemical properties of these dimers and trimers were investigated.
The absorption and emission spectra of the dimers and trimers, possessing the same molecular formula, were different (Fig. 1) when the order of the units was different. The emission profiles of the arrays, 4-HZn and 6-HZnH, were attributed to that from the free-base porphyrin unit; however, the wavelengths and intensities of their emission were different. (Fig. 1.(b)). The differential pulse voltammograms of the monomers, 1-H and 1-Zn, and the dimer 4-HZn are demonstrated in Fig. 2. Certain redox peaks of the dimer 4-HZn were almost identical to those of the component monomers (1-H and 1-Zn); however, a few new redox peaks were observed, which indicated the emergence of new electronic states via interaction of each unit component.
(1) Nakamura, Y.; Aratani, N.; Osuka, A. Chem. Soc. Rev.
2007, 36, 831.
(2) Sedghi, G.; Garcia-Suarez, V. M.; Esdaile, L. J.; Anderson, H. L.; Lambert, C. J.; Martin, S.; Bethell, D.; Higgins, S. J.; Elliott, M.; Bennett, N.; Macdonald, J. E.; Nichols, R. J. Nat Nano
2011, 6, 517.
(3) Noguchi, H.; Hojo, K.; Suginome, M. J. Am. Chem. Soc.
2007, 129, 758.
Electrochemical Analysis of Phthalocyanine Grafted Polymer Nanofibers
Authors: Gokceoren Argun T , Kaplan Ekrem , Arsalanoglu Yasin 
Published: February 2020

Nanofibers possess exclusive physical, chemical, and electronic properties. Although different methods are known [1-2], electrospinning has been used with an increasing impact because of the ease of proceeding and the use of a wide range of polymeric materials [3–4] in the production of nanofibers.
Metal free phthalocyanine grafted polypyrrole and cobalt metallated phthalocyanine grafted polypyrrole nanofibers were prepared by electrospinning method. The electrospun PPy and phthalocyanine grafted polypyrrole fibers were coated on indium tin oxide electrode surface for a proper investigation of the electrochemical activity of the fibers. Different methods were used to characterize the obtained fibers. Fourier-transform infrared spectroscopy, Scanning electron microscope and polarized optical microscope were used for their morphological characterization, while electrical behaviors of the nanofibers were characterized by direct current and electrochemical impedance spectroscopy measurements.
[1] Feng L, Li S, Li H, Zhai J, Song Y, Jiang L. Super-Hydrophobic Surface of Aligned Polyacrylonitrile Nanofibers. Angew Chem Int Ed 2002;41:1221–1223.
[2] Ma PX, Zhang R. Synthetic nano-scale fibrous extracellular matrix. J Biomed Mat Res 1999;46:60–72.
[3] Menon VP, Lei J, Martin CR. Membrane-Based Synthesis of Nanomaterials. Chem Mater 1996; 8: 2382-86.
[4] Joo J, Park KT, Kim BH, Kim MS, Lee SY, Jeong CK, Lee JK, Park DH, Yi WK, Lee SH, Ryu KS. Conducting Polymer Nanotube and Nanowire Synthesized by Using Nanoporous Template: Synthesis, Characteristics, and Applications. Synth Met 2003;135:7-13.
(Invited) Electrical Characterization of Defects in Al2O3
Authors: Schmid Alexander , Kersten Friederike , Rentrop Solveig , Abendroth Barbara , Meyer Dirk Carl , Heitmann Johannes 
Published: February 2020

Nanocrystalline high-k dielectrics play a major role in semiconductor research and development. The semiconductor industry faces nanocrystalline dielectrics for MIM capacitors in DRAM devices [1] and rf applications, as well as for gate dielectrics in sub 45 nm devices.
However, the use of crystalline dielectrics lead to new effects like trapping, stress induced leakage currents [2, 3], change in the field extrapolation model of lifetime [4] and an increase of dielectric absorption effects [5]. Most of the described effects are connected to the formation of defect states within the bandgap of the dielectric material. We will review our work on electrical characterization of amorphous and crystalline dielectrics of materials like Al2O3, HfO2, ZrO2 and SrZrO. The time constants of the dielectric absorption of the dielectrics differ very strongly and mainly for the crystalline dielectrics they show strong load voltage dependence. This can be attributed to a very effective tunneling process into a defect band in the high-k-Material at voltages of 0.6-0.7 V. Additionally, optical stimulated leakage current measurements at 15 K will be shown. Here, defects states in the dielectric and at the interface dielectric-semiconductor can be optically stimulated with IR-light for different sub-band-gap energies.
By the different described methods a detailed characterization of the energy of the investigated bulk and interface traps of the high-K material in combination with Si and GaN substrates are carried out.
[1] J. Heitmann, A. Avellan, T. Boescke, E. Erben, B. Hintze, S. Jakschik, S. Kudelka, and U. Schroeder, ECS.
Trans.
2,217 (2006).
[2] D. Zhou, U. Schroeder, J. Xu, J. Heitmann, G. Jegert, W. Weinreich, M. Kerber, S. Knebel, E. Erben, and T. Mikolajick, J. of Appl. Phys. 108 (2010) 124104.
[3] A. Paskaleva, M. Lemberger, A.J. Bauer, W. Weinreich, J. Heitmann, E. Erben, U. Schröder, and L. Oberbeck, J. Appl. Phys. 106 (2009) 054107.
[4] R. Agaiby, P. Hofmann, D. Zhou, M. Kerber, J. Heitmann, U. Schroeder, E. Erben, L. Oberbeck, IEEE Elect. Dev. Lett. 30 (4) (2009) 340-342.
[5] M. Kerber, C. Fachmann, J. Heitmann, S. Kudelka, U. Schröder, H. Reisinger, J. Vac. Sci. Technol. B 27(1) (2009) 321-324.
Characterization of a Novel Radical Nitrogen Plasma Source for Semiconductor Nitridation
Authors: Lucero Antonio Tomas , Cho Taiheui , Kim Jiyoung 
Published: February 2020

Surface nitridation has long been desirable for surface and interface passivation to realize ultra-low equivalent oxide thickness (EOT) dielectric layers on Si and III-V materials. Various nitridation techniques exist, including thermal and plasma nitridation. Thermal processes rely on high temperatures which are difficult to control for very shallow nitridation without any significant diffusion. Thermal budgets become stricter when moving to III-Vs, unless special steps are taken to reduce or eliminate loss of low vapor pressure materials (ie. As, In). Conventional plasma processes allow lower temperatures but can expose the substrate to damaging, high energy ions. Shallow channel devices are particularly vulnerable to substrate damage, degrading mobility.
We will report nitridation of Si and GaAs using a novel, remote nitrogen radical generator system. The generator is a custom, atmospheric plasma source capable of generating a large concentration of N radicals without exposing the substrate to plasma. Processes are carried out at low pressures, 1-10 Torr, and the generator is connected to the process chamber by an orifice, precluding direct line of site to the plasma. The system is integrated with an atomic layer deposition (ALD) chamber for both radical enhanced and thermal ALD, allowing in-situdeposition of dielectrics.
Growth temperatures range from room temperature to 400 °C. Aluminum oxide, aluminum nitride and zirconium oxide ALD dielectric stacks will be analyzed using ex-situ x-ray photoelectron spectroscopy (XPS) to gauge the surface chemistry and nitridation stability. Metal-oxide-semiconductor capacitors will be measured using capacitance-voltage (C-V) measurements to look at the nitridation contribution to electrical properties. Emphasis will be places on zirconia-alumina-zirconia (ZAZ) stacks, with nitridation at the interface and the dielectric bulk.
We would like to thank Samsung Electronics for their financial support and Toshiba Mitsubishi-Electric Industrial Systems Corporation (TMEIC) for providing the nitridation system.
Heterogeneous Integration of Plasmonics with Si-Photonics & Microelectronics for High-Performance Optical Routing
Authors: Tekin Tolga , Pleros Nikos , Bozhevolnyi Sergey I. , Dereux Alain , Avramopoulos Hercules , Waldow Michael 
Published: February 2020

Advanced packaging technologies impact future systems, since packaging determines functionality, cost and reliability of future systems. The future systems are very high complex systems and contain different physical functions. Therefore modularity in heterogeneous integration is required. Future systems combine optical and ultra high frequency functions. With this a large variety of materials will be applied. For all these components a common smart support substrate such as ‘Silicon’ will be of importance for future systems. Furthermore, System-in-Package is must for future subsystems in order to overcome the challenges.
In tems of of today’s Peta-flop High-Performance Computing (HPC) applications the size and power consumption appear to be critical issues, signifying that new technological and architectural considerations are required in order to be able to move towards Exascale-computing powers. Whereas silicon photonics emerges as a powerful technology for low-loss and high bandwidth optical connectivity in integrated circuit environments, servers and network switches are already consolidating into high-density blade enclosures in order to reduce space and cooling requirements. These considerations determine additional tasks for switching infrastructures of miniature data networks: the next generation of routing circuitry has to provide high throughput capabilities while keeping in line with the requirements of small foot-print, low power consumption and low latency. Here, next generation computing architectures are needed with ultra low power consumption; ultra high performance with novel photonic interconnection technologies. The objective of the recently proposed high bandwidth photonics interconnection layer for converged microsystems using System-in-Package Technology, is to develop a CMOS compatible underlying technology to enable next generation optical computing architectures.
We present within the framework of EU-PLATON project a photonic integrated system-in-package platform for Tb/s optical routing, where three different technologies, silicon photonics, plasmonics and electronics are merged. Compatibility between various components has to be ensured to allow for their seamless interfacing and interoperability. The 4x4 router architecture exploits a SOI platform employing 340x400nm2 waveguide structures and hosting four 7:1 SOI multiplexing circuits, four photodiodes, an electronic IC control circuit and the 4x4 dielectric-loaded surface plasmon-polariton (DLSPP)-based switching matrix.
This work has been partly supported by the European FP7 research program PLATON, Contract Number 249135. www.ict-platon.eu
Integrated CMOS-MEMS Technology and Its Applications
Authors: Machida Katsuyuki , Konishi Toshifumi , Yamane Daisuke , Toshiyoshi Hiroshi , Masu Kazuya 
Published: February 2020

Fusion of microelectromechanical systems (MEMS) with CMOS LSI technologies is a promising way to develop high functional devices. We have been developing the integrated CMOS-MEMS technology that fabricates MEMS devices on CMOS LSI[1-2]. Thetechnology has the features ofhigh-functionality, high-accuracy, and mass-production.
In this paper, first, MEMS technology trends and the concept of the integrated CMOS-MEMS technology are described. Next, we present the multi-physics simulation for the CMOS-MEMS technology[3-4]. Finally, as the examples, we demonstrate the arrayed CMOS-MEMS accelerometer[5-7].
Prospects and challenges of the integrated CMOS-MEMS technology are described from the view point of CMOS-LSI (Fig.1). It indicates that this technology gives the solution of developing high functional devices.
We have developed the multi-physics simulation platform to analyze the electromechanical behaviors of MEMS and CMOS simultaneously. Based on the analytical model, the equivalent circuit was proposed to simulate the above behavior on a Verilog-A compatible hardware description language (Fig.2).
Small size and wide range accelerometers are increasingly in demand in the various system. Figure 3 shows the proposed arrayed CMOS-MEMS accelerometer that was capable of detecting a wide range of acceleration. The MEMS accelerometer was fabricated by gold electroplating with post-CMOS process. We can obtain the 3-by-3 arrayed MEMS accelerometer with the sensing range from 1.7G to 20G(Fig. 4). Also, using the simulation results obtained by the above multi-physics platform, we can realize the CMOS-MEMS accelerometer.
In conclusion, it is confirmed that the integrated CMOS-MEMS technology will pave the way for the More than Moore technology.
References
[1] K. Machida, et al., IEEE Trans. Electron Devices
48, 2273 (2001).
[2]K. Machida, et al., SSDM2010, Tokyo, Sep. 24, p.818(2010).
[3]H. Toshiyoshi, et al., IEDM 2012, USA, p. 6.3.1(2012).
[4]T. Konishi,
et al., IEEE/ASME
J. Microelectromech. Syst., vol. 22, no. 3, Jun. p.755 (2013).
[5]D. Yamane, et al., Transducers 2013, Spain, p.22 (2013).
[6]T. Konishi, et al., Jpn. J. Appl. Phys., vol. 52, p. 06GL04(2013). [7]T. Konishi, et al., SSDM 2013, Sept. 24-27, Fukuoka, Japan. p.844(2013).
(Invited) Metrology for 3D Integration
Authors: Allen Richard A , Vartanian Victor , Read David , Baylies Winthrop 
Published: February 2020

Three-dimensional stacked integrated circuits (3DS-IC) fabrication requires complex technologies such as high-aspect ratio through-silicon vias (TSVs), wafer thinning, thin wafer handling and processing, and bonding of thin wafers with complex patterned surfaces. The implementation 3DS-IC also presents significant metrology challenges. This talk will give an overview of the metrology needs for 3DS-IC, identify solutions, and describe work towards the development of standards to support the 3D ecosystem.
One of these standards under development is investigating methods for identifying and characterizing voids between bonded wafers. Wafer bonding in a 3DS-IC process is typically an intermediate step. After bonding, one or both of the wafers will undergo processes such as thinning, thin film deposition, lithography, and patterning. The presence of voids between the wafers will cause significant stack thickness variation, which can lead to failure at one or more of these steps. A number of tools can be used to identify and/or characterize voids; this standard will provide members of the 3DS-IC community with guidance for choosing the tool or tools that will best address the specific need.
Preliminary results from a round robin experiment, involving approximately 20 laboratories, will be shown. This experiment uses as a test structure a bonded wafer pair with a number of voids patterned into one of the wafers before bonding. The sizes of the programmed voids range from 0.5 μm to 300 μm with depths of 15 nm to 1200 nm and are placed in isolated, semi-dense, and dense patterns. A scanning acoustic microscope image of one instance of the test chip with patterned voids is shown in the figure.