bluuebunny/crossref_metadata_2025_split huggingface dataset:
Can brain natriuretic peptide, S100b, and interleukin-6 prognosticate the neurological consequences in Egyptian patients presented with supratentorial intracerebral hemorrhage?
Authors: Eldawoody Hany A. Fikry , Mattar Mohammed Abdel Bari , Mesbah Abeer , Zaher Ashraf , Elsherif Mohammed 
Published: December 2020

Background:
Biomarkers in supratentorial intracerebral hemorrhage (SICH) enhance the prognosis of the disease. This study aimed to assess the prognosticative grade of S100 calcium-binding protein B (S100B), interleukin-6 (IL-6), and the pro-brain natriuretic peptide (pro-BNP) in SICH outcome prediction.

Methods:
Blood samples of 50 SICH patients were analyzed for the biomarkers. The patients were classified into two groups with and without intraventricular hemorrhage (IVH). The following scales including Glasgow Coma Score (GCS), the Barthel index (BI), intracerebral hemorrhage (ICH) score, ICH volume, National Institutes of Health Stroke Scale (NIHSS), Modified Rankin Score (mRS), and length of stay were used to evaluate the severity.

Results:
The severity scores (NIHSS, GCS, BI, mRI) were significantly higher in SICH patients with IVH versus SICH patients without IVH (P = 0.002, 0.008, 0.001, and 0.03, respectively). Serum levels for a pro-BNP and S100b are significantly higher in SICH patients with IVH versus SICH patients without IVH (P = 0.02 and 0.027, respectively). Multivariate correlations between demographic (age), biomarkers panel (IL-6, S100b, and proBNP), and clinical and severity scores (ICH score, ICH volume, length of hospital stay [LOS], BI, mRS, GCS, and NIHSSS) in all studied patients showed a highly significant correlation between ICH score and pro-BNP (P = 0.04). There was a highly significant correlation between LOS and IL-6 (P = 0.003).

Conclusion:
Pro-BNP, IL-6, and S100b are greatly associated with the presence of IVH that, in turn, correlated well with poor clinical outcome measures.
CAUSES AND EFFECTS OF THE PROTAGONIST’S WORRY IN DANIELLE STEEL’S NOVEL FAMILY TIES
Authors: Ikhsan Muhammad , Ekalestari Susi 
Published: December 2020

This research analyses the causes and effects of the protagonist’s worry in Danielle Steel’s novel Family Ties, a story of woman, Annie Ferguson, who must become a mother in her bachelorette. She always worries about the future of her sister’s children. This research applied the theory of worry proposed by Graham (2006), who said that worry is “prominent feature of most anxiety-based disorders including generalized anxiety disorder, specific phobias obsessive-compulsive disorder, panic disorder, and post-traumatic stress disorder“. The research is completed by using descriptive qualitative method in which the finding is presented in the form of description. The data of this study is obtained from the novel Family Ties by Danielle Steel. The analysis finds that the dominant causes of the protagonist’s worry come from her nephews’ life which affects her life negatively. The effects of her worry will be a lesson for human life because every human being certainly has worry feeling in their life in certain situations.
Deficiencia de hierro en mujeres universitarias en edad reproductiva en la Facultad de Medicina, Uruguay
Authors: Grille Sofía , Lorenzo Mariana , Acosta Soledad , Acosta Nadia , Correa Sharon , Corral Mercedes , Quintanilla Cinthya , Ragone Romina , Guillermo Cecilia 
Published: December 2020

Introducción: Los trastornos del metabolismo del hierro son condiciones patológicas muy frecuentes. La deficiencia de hierro, con o sin anemia, se estima que afecta a más de 2 billones de personas.
El objetivo de este estudio fue determinar la prevalencia de deficiencia de hierro y anemia y los factores predisponentes en un grupo de mujeres premenopáusicas, estudiantes universitarias de la Facultad de Medicina de la Universidad de la República en Uruguay.
Métodos: Se realizó un estudio observacional de corte transversal donde se incluyeron mujeres en edad reproductiva estudiantes universitarias de la Facultad de Medicina. Se les realizó una entrevista con el objetivo de recabar los datos clínicos y se registró el volumen menstrual mensual a través de un pictograma. Se realizó un hemograma y se determinaron los niveles de ferritina.
Resultados: Se incluyeron 196 mujeres de 18 a 37 años. La prevalencia de ferropenia fue 8.7% (n=17) y la prevalencia de anemia fue de 2.1% (n=4). La presencia de ferropenia se asoció a un menor consumo de carne roja (p=0.024), a un mayor volumen menstrual (p=0.018) y a una mayor frecuencia de sangrado uterino anormal (p=0,019).
Conclusión: Este estudio pone de manifiesto la frecuencia elevada de deficiencia de hierro en mujeres sanas en relación con sangrado uterino anormal y bajo consumo de carne roja, lo que plantea la necesidad de implementar programas que promuevan medidas educativas a fin de promover la consulta precoz y evitar la anemia y ferropenia en estas mujeres en edad reproductiva.
The Use of Near-Field Scanning Optical Microscopy for Failure Analysis of ULSI Circuits
Authors: Cramer R.M. , Balk L.J. , Chin R. , Boylan R. , Kämmer S.B. , Reineke F.J. , Utlaut M. 
Published: December 2020

Abstract
As minimum feature sizes decrease for ultra large scale integration, deleterious effects of smallest defects become increasingly important. In order to detect, measure and analyze these defects in buried structures, complementary techniques to those presently used must be developed and explored. Conventional optical microscopy techniques such as UV, confocal and laser scanning are approaching their fundamental limits of resolution. The near-field scanning optical microscope (NSOM) offers sufficiently high spatial resolution (50 nm), and an excellent signal-to-noise ratio to image buried structures inside optically transparent media. In order to investigate defects in layers below the surface of completed devices, we have developed a special sample preparation technique and have demonstrated optical resolution at the 50 nm level. In addition, we have explored the interaction in the image formation of a mixture of near and far field contributions. We show how useful buried layer information may be obtained via NSOM and demonstrate the present limitations of the technique. We compare our results to those obtained by conventional optical microscopy techniques.
Contamination Diagnosis Using Contamination-Defect-Fault (CDF) Simulation
Authors: Khare J. , Maly W. 
Published: December 2020

Abstract
This paper describes a simulation-based approach to contamination diagnosis. The methodology is based on the contamination-defect fault (CDF) simulator CODEF. CODEF is able to derive circuit-level faults resulting from contamination deposited on an IC cell during fabrication by simulating the manufacturing process flow. The application of CODEF in contamination diagnosis is illustrated with several examples.
Failure Analysis From Back Side of Die
Authors: Wu N.M. , Weaver K. , Lin J.H. 
Published: December 2020

Abstract
With increasing complexity of circuit layout on the die and special packages in which the die are flipped over, failure analysis on the die front side, sometimes, can not solve the problems or is not possible by opening the front side of the package to expose the die front side. This paper discusses fault isolation techniques and procedures used on the back side of the die. The two major back side techniques, back side emission microscopy and back side OBIC (Optical Beam Induced Current), are introduced and applied to solve real problems in failure analysis. A back side decapsulation technique and procedure are also introduced. Last, several examples are given. The results indicated that the success in finding root cause of failure is greatly increased when these techniques are used in addition to the traditional front side analysis approaches.
Temperature Profiling with Highest Spatial and Temperature Resolution by Means of Scanning Thermal Microscopy (SThM)
Authors: Fiege G. M. , Cramer R. M. , Balk L. , Reineke F. 
Published: December 2020

Abstract
As smallest feature sizes approach the 150 nm regime, the spatial resolution of a temperature measurement technique must be within the same range in order to resolve temperature distributions of single structures. In this work we present a system which has the capability to measure millikelvin temperature distributions while enabling a spatial resolution in the nanometer regime. The probe consists of a bent platinum wire which acts as a resistive probe. The probe is scanned over the sample in an SFM contact mode. The probe resistance changes caused by variations in the sample surface temperature are measured and recorded simultaneously with the topography data, thus producing two-dimensional temperature profiles. We have achieved a temperature resolution of 50 mK and a spatial resolution of less than 500 nm on passivated samples.
A Simple, Cost Effective, and Very Sensitive Alternative for Photon Emission Spectroscopy
Authors: Rasras M. , De Wolf I. , Groeseneken G. , Maes H. E. , Vanhaeverbeke S. , De Pauw P. 
Published: December 2020

Abstract
A new, simple and cost effective photo emission microscope (PEM) for continuous wavelength measurement is proposed (SPEMMI: Spectroscopic Photo Emission Microscope). The new system uses only one sensitive detector (GENIII-NIR) for both conventional failure detection and spectral analysis. The spectrometer and the mechanical parts, used to build up the SPEMMI, are presented. Also the required calibration procedures are discussed. To demonstrate the functionality of the new system, spectra of hot carriers in a saturated NMOS transistor and of a diode in forward and reverse biased conditions are discussed. In addition, the application of SPEMMI for determination of failures that occur in industrial IoDQ-failed VLSI chips is illustrated.
A Selected Area Planar TEM (SAPTEM) Sample Preparation Procedure for Failure Analysis of Integrated Circuits
Authors: Subramanian S. , Schani P. , Widener E. , Liston P. , Moss J. , Soorholtz V. 
Published: December 2020

Abstract
A selected area planar TEM (SAPTEM) sample preparation technique for failure analysis of integrated circuits using a transmission electron microscope has been developed. The technique employs a combination of mechanical grinding, selective wet/dry chemical etching (if required) and a two step focused ion beam IIFIB) milling. The mechanical grinding steps include: (a) a backside grind to achieve a die thickness less than 30 µm, (b) the support half ring glue, and (c) a cross-section grind from one side to reach less than 35 pm to the failing site. A selective wet or dry chemical etch is applied before, between,, or after FIB thinning depending on the nature of problem and device components. The FIB milling steps involve: (is) a high ion current cross-sectional cut to reach as close as 5-8 µm to the area of interest (b) a final planar thinning with the ion beam parallel to the surface of the die. The plan view procedure offers unique geometric advantage over the cross-section method for failure analysis of problems that are limited to silicon or certain layers of the device. Iln the cross-sectional approach, a thin section (thickness less than 250 µm) of a device is available for failure analysis, whereas in the planar procedure a 20 µm2 area of any layer (thickness less than 250 µm) of the device is available. The above advantage has been successfully exploited to identify and solve the following prablems in fast static random access memories (FSRAM): (i) random gateoxide rupture that resulted in single bit failures, (ii) random dislocations from the buried contact trenching that caused single bit failures and general silicon defectivity (e.g. implant damage and spacer edge defects), and (iii) interracial reactions.
Basic Physics in Color-Coded EOS Metallization Failures (Differentiating between EOS and ESD)
Authors: Henry Leo G. , Mazur J.H. 
Published: December 2020

Abstract
The task of differentiating precisely between EOS and ESD failures continues to be a challenging one for Failure Analysis Engineers. Electrical OverStress (EOS) failures on the die surface (burnt/fused metallization) of an IC can be characterized mainly by the discoloration at the site of the failures. This is in direct contrast to the lack of discoloration characteristic of ESD failures, which occur almost exclusively below the die surface (oxide and junction failures). To aid in this distinction, this paper attempts to present the underlying physics behind the discoloration produced in the EOS failures. For the EOS failures, the metal fuses due to the longer pulse widths (sec to msec), while for the ESD failures, the silicon melts because of the shorter pulse widths (&lt; &lt; 500 nsec) and higher energy. After EOS, the aluminum surface becomes dark and rough and the oxide in the surrounding area becomes deformed and distorted, resulting in the discoloration observed in the light microscope. This EOS discoloration could be due to one or more of the following: 1) morphological and structural changes at the metal/glass interface and the glass itself; 2) changes in the thickness and scattering behavior of the glass and metal in the failed areas.
A Hermetic Package Internal Water Vapor Paradox: Nonconforming Product That Does Not Fail
Authors: Lowry Robert K. 
Published: December 2020

Abstract
Corrosion in hermetically sealed electronic devices is a well-known failure mechanism that can occur when moisture in a sealed cavity condenses and destroys metallization by chemical or galvanic action. Early military standards imposed a 5000 part per million by volume (ppmv) limit on internal water vapor (IWV) in hermetic parts measured by mass spectrometry. In a recent product lot IWV non-conformance, 15 of 37 product lots and 56 of 369 units were nonconforming, with IWV ranging from 5000 to 32,000 ppmv. Root cause was outgassing from a non-robust die adhesive. Functionality of non-conforming units was investigated. Of 149 units selected from non-conforming product lots and lifetested under both static and 17.7V bias conditions at 2°C (assuring condensate in non-conforming units) for 2000 hours, none failed functionally. Subsequent analysis of 27 of these units found 17 exceeding 5000 ppmv IWV with one unit as high as 90,000 ppmv IWV. Despite the certainty of condensate internally during life tests, all units maintained functionality. Units were further investigated by internal visual inspection, glass integrity testing of die passivation, and SIMS analysis of internal surfaces for ionic impurities. The units passed all inspections and were free of any ionic impurities detectable to the few ppm level by SIMS. IWV is clearly a necessary precursor to, but not a sufficient condition for, corrosion failure. This paper discusses these results and proposes an alternative IWV criterion for product assurance.
Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques
Authors: Lorenz H. , Engel C. 
Published: December 2020

Abstract
Due to the continuously decreasing cell size of DRAMs and concomitantly diminishing thickness of some insulating layers new failure mechanisms appear which until now had no significance for the cell function. For example high resistance leakage paths between closely spaced conductors can lead to retention problems. These are hard to detect by electrical characterization in a memory tester because the involved currents are in the range of pA. To analyze these failures we exploit the very sensitive passive voltage contrast of the Focused Ion Beam Microscope (FIB). The voltage contrast can further be enhanced by in-situ FIB preparations to obtain detailed information about the failure mechanism. The first part of this paper describes a method to detect a leakage path between a borderless contact on n-diffusion and an adjacent floating gate by passive voltage contrast achieved after FIB circuit modification. In the second part we will demonstrate the localization of a DRAM trench dielectric breakdown. In this case the FIB passive voltage contrast technique is not limited to the localization of the failing trench. We can also obtain the depth of the leakage path by selective insitu etching with XeF2 stopped immediately after a voltage contrast change.
Application of EMS Analysis to Failure in Cell Area of Memory Device
Authors: Nukumizu T. , Sato J. , Furuya H. , Namba H. , Kikuch T. 
Published: December 2020

Abstract
EMS analysis is widely used in the failure analysis of the semiconductor. Moreover, the availability is widely evaluated. However, EMS analysis is not often used for the defect (1 Bit failure, Word Line failure, Bit Line failure, etc.) in the cell area in the memory device, because information on Fail Bit Map can be facilitated. Recently, make minutely advancing, and it is impossible to detect the defective cause only by Fail Bit Map information. We found the effectiveness as follows by the use of EMS analysis for a defective sample with Fail Bit Map information to solve such a problem. It leads to shortening analysis TAT because a defective part can be specified. Moreover, because the SHORT/OPEN mode can be divided, it is useful for the presumption of a defective mode. Furthermore, it is effective also to the confirmation of the presence of the redundancy and the confirmation of Fail Bit Map. Thus, because the application of EMS analysis for the defect in the cell area of the memory device is very effective to detect a defective cause, I want to recommend it by all means.
FIB Micro-Surgery on Flip-Chips from the Backside
Authors: Lee Raymond , Antoniou Nicholas 
Published: December 2020

Abstract
The increasing use of flip-chip packaging is challenging the ability of conventional Focused Ion Beam (FIB) systems to perform even the most basic device modification and debug work. The inability to access the front side of the circuit has severely reduced the usefulness of traditional micro-surgery. Advancements in FIB technology and its application now allow access to the circuitry from the backside through the bulk silicon. In order to overcome the problem of imaging through thick silicon, a microscope with Infra Red (IR) capability has been integrated into the FIB system. Navigation can now be achieved using the IR microscope in conjunction with CAD. The integration of a laser interferometer stage enables blind navigation and milling with sub-micron accuracy. To optimize the process, some sample preparation is recommended. Thinning the sample to a thickness of about 100 µm to 200 µm is ideal. Once the sample is thinned, it is then dated in the FIB and the area of interest is identified using the IR microscope. A large hole is milled using the FIB to remove most of the silicon covering the area of interest. At this point the application is very similar to more traditional FIB usage since there is a small amount of silicon to be removed in order to expose a node, cut it or reconnect it. The main differences from front-side applications are that the material being milled is conductive silicon (instead of dielectric) and its feature-less and therefore invisible to a scanned ion beam. In this paper we discuss in detail the method of back-side micro-surgery and its electron device performance. Failure Analysis (FA) is another area that has been severely limited by flip-chip packaging. Localized thinning of the bulk silicon using FIB technology offers access to diagnosing failures in flip-chip assembled parts.
Quantitative E-beam Probe for Valid High-Speed Measurements
Authors: Salling C. T. 
Published: December 2020

Abstract
This paper presents the results of a study to assess the timing measurement capabilities of e-beam probes and how they compare to mechanical probes in terms of sampling time, accuracy, and repeatability. Analysis of the data indicates that the transient response of mechanical probes is prone to overshoot and ringing, which contributes significantly to measurement error and uncertainty. E-beam probes, on the other hand, are subject to charging effects and interference which, as the authors show, can be effectively eliminated, facilitating high-speed timing measurements accurate to within a few picoseconds.
Sample Preparation for Backside Failure Analysis Using Infrared Photoemission Microscopy
Authors: Trigg Alastair , Loh Peak Yong 
Published: December 2020

Abstract
For conventional photoemission microscopy the silicon is thinned to a few tens of micrometres for backside imaging since silicon is opaque in the visble part of the spectrum. However, at wavelengths greater than approximately 1050 nm, most silicon is effectively transparent. Hence, the use of an infrared photoemission microscope (IRPEM) operating at wavelengths of 1100 to 2500 nm, usually eliminates the need for thinning, except where the silicon is heavily doped. However, the plastic encapsulation of packaged devices must be removed and the die surface polished. A polishing system has been evaluated and optimised for this purpose. Surface roughness (Ra) of 1 nm or better was obtained. Representative applications are shown and discussed.
Selective Au-Etching on Aged GaAs-Based Devices
Authors: Vanzi M. , Bonfiglio A. , Salaris P. , Deplano P. , Trogu E.F. , Serpe A. , Salmini G. , De Palo R. 
Published: December 2020

Abstract
A specific problem in failure analysis of InGaAs/ AlGaAs laser diodes asked for a deprocessing tool able to selectively etch gold from a Ti/Pt/Au triple metal layer. Attempts made by the usual I2/KI etch confirmed the damage that it causes to the crystal stack, and non-uniform attack of gold. A new etch, indicated as Epta-Methyl-bis-diodine, has been successfully employed. Careful time control and detailed characterization of the complex metallization pattern of the devices allowed not only to properly expose the Pt layer, but also to preserve the overall electrical connection, thus maintaining the capability of both measuring the electrical characteristics at low current injection and collecting the EBIC signal from the etched device.
Evacuated FM08 Fuses Carry a Sustained Arc in a Bus over 75 VDC
Authors: Leidecker H. , Slonaker J. 
Published: December 2020

Abstract
The FM08 style fuse is specified to interrupt an overcurrent of up to 300 A in a bus of up to 125 VDC, but this applies only when its barrel is filled with air. When placed into a space-grade vacuum, the FM08 style fuse exhausts its air within a year. Then, the probability of an enduring arc is high for all ratings when the bus is above 75 VDC, and the overcurrent is large. The arc endures until something else interrupts the current. The fuse can violently eject metal vapor or other material during the sustained arcing. The evacuated FM08 does not develop a sustained arc when interrupted in a bus of 38 VDC or less, at least when there is little inductance in the circuit. This is consistent with its successful use in many spacecraft having buses in the range 24 to 36 volts.
Reliability Test Results for Pt FIB Interconnect Structures
Authors: Zaragoza Michael 
Published: December 2020

Abstract
The reliability of FIB deposited Pt structures is assessed through lifetesting of product die and through stress testing of via-intensive test structures. Data is also presented for Pt resistance monitors collected over a 21 month period aimed at assessing the stability of the FIB deposition process. Two product types were subjected to HTOL and HTSS conditions at 125°C followed by temperature cycling. The test structures were stressed at different combinations of temperature ranging from 100°C to 140°C and with currents up to 5 mA. Neither product type experienced any FIB related failures whereas the test structure saw 70% fallout due to degradation of the Pt material within the vias. Temperature cycling did not precipitate any failures. The Pt resistance monitor data showed that film resistance increases with film thickness indicating the incorporation of organic byproducts from the deposition process.