bluuebunny/crossref_metadata_2025_split huggingface dataset:
Vulnerability and Disaster Resilience at Household Level
Authors: Poudel Namita 
Published: December 2020

Many development practitioners, academicians, development institutions and organizations, are attempting to discover the characteristic of resilience in Nepal. The issue of disaster resilience got its prominence in Nepali scholarship after the 2015 earthquake. The people of Nepal today, are visible to perpetual disaster events and profound vulnerability to the disaster, which was already there. Disaster incidents are increasing day by day, due to natural hazards such as landslides, floods, and human-induced activities like road accidents, fire, etc. But these consequences are not merely natural events; they are social events as well. The deaths of people, injuries, and property damage are related to the social side of the disaster. Similarly, natural hazards such as earthquakes are also creating disasters because of vulnerability and the absence of disaster resilience in Nepalese people. Rising incidents of disaster vulnerability and resilience is increasing concern of the state, academia and local level, since Nepal is 4th and 11th vulnerable to the risk of climate change and earthquakes in the world. Apart from that, other chances of disaster are equally mounting, and the capacity to cope (Resilience), or coming back to usual conditions is not enough for surviving and moving forward.

This article tries to explore the relationship between vulnerability and disaster resilience, and the research questions of this article are, what types of vulnerability are creating the barrier for a resilient household and what are the attributes of a resilient family? Dhugin, Lamatar is the field for this research, and answers are dug out based on the Nepal earthquake 2015 as a major disaster of Nepal. Field data are collected after finalizing the purposive sampling. The interview method is used to take the depth information. Face-to-face interviews with informants remained the primary sources for data collection. And this research has been conducted using a qualitative method. My finding is: adopting capacity with the help of resources and assets and absorbing capacity by shifting occupation; after a disaster are the attributes of resilient households, whereas geographically vulnerability, exclusion, poverty remained barriers for resilient families.
The spring bread wheat ‘Ekstra’
Authors: Zezin N. N. , Vorobiev V. A. , Vorobiev A. V. , Bezgodov A. V. , Nikolaeva Z. R. 
Published: December 2020

The current study was carried out in order to create an early-ripening variety of spring bread wheat with productivity at the level of middle-early or higher, the most adapted to the specific conditions of the Middle Urals. The estimation of the breeding material was carried out in the fields, the soils of which are typical for the Sverdlovsk region and Permsky Krai. During the years of the study, the agroclimatic conditions differed along the growing season. There have been established the dry year of 2016 (90 mm of rain, GTC 0.6) and the moisture years of 2014, 2015, 2017–2019 (with precipitation amount of 247–448 mm, GTC 2.0–3.2). The crossings were carried out between the middle-ripening variety ‘Omskaya 35’ (mother) and the early- ripening variety ‘Iren’ (father). There has been developed the variety that combined high productivity and early maturity. The average productivity of the new variety ‘Ekstra’ in the Competitive Variety Testing in 2014–2019 was 4.07 t/ha, which is on 0.55 t/ha higher than the standard variety ‘Iren’, the maximum productivity was 5.0–6.1 t/ha (2019). The new variety has exceeded the values of the standard variety in such yield structure elements as “seed weight per head”, “1000 grain weight”, “grain content per head”; the accumulation of seeds per day of growing season was 14.2% and at 1 mm of precipitation the value improved till 15.2%. In the ecological testing the variety ‘Ekstra’ exceeded the varieties ‘Iren’, ‘Irgina’ from the State List of Breeding Achievements in the Volga-Vyatka region on 0.56–0.80 t/ha and the middle-early ripening varieties ‘Gornouralskaya’, ‘Bazhenka’, ‘Svecha’, ‘Zlata’ on 0.44–0, 55 t/ha. The variety ‘Ekstra’ is characterized by better energy efficiency parameters than ‘Irgina’, ‘Iren’, ‘Gornouralskaya’, ‘Zlata’. The excess was 9.2–21.9% in terms of total energy in the harvest per hectare, 16.0–40.6% in net energy income, and 4.7–13.1% in bioenergy ratio. The variety reduced energy consumption for the production of 1 ton of grain by 9.5–11.5%. There has been determined a significant advantage of the variety ‘Ekstra’ in terms of the general adaptability, stability, and breeding value of the genotype. In 2020 the variety was included into the State List of Breeding Achievements in the Volga-Vyatka region, Ural, West Siberian regions of the Russian Federation. The variety ‘Ekstra’ has the same parameters of productivity, yield structure elements, adaptability, the accumulation of seeds per day of growing season and per 1 mm of precipitation, energy efficiency of cultivation, as the middle-early ripening standard variety ‘Ekaterina’.
Dinamika HAM dalam Perbincangan Tiga Dimensi: Tinjauan Konseptual dan Praktis
Authors: Regus Max , Jelahut Marianus Supar , Nesi Antonius 
Published: December 2020

<p><em>Human Rights (HAM) has achieved a lot of progress as well as a stalemate. The human rights condition at these two points also shows human rights dynamics concerning various dimensional contexts. This article explicitly discusses the significant dimensions of the dynamics of human rights. Based on a critical literature review and practical reflection, this study proposes two three-dimensional analysis models of human rights dynamics at both global and national levels. The first model deals with the historical, theoretical, and practical dimensions of human rights dynamics. The second model explains the normative-philosophical, political, and sociological dimensions of the dynamics of human rights. This article consists of several sections, including an introduction, an analytical framework, the two</em><em>-</em><em>dimensional model of human rights dynamics, and </em><em>a </em><em>conclusion.</em></p><p><em> </em></p><p><strong>Keywords</strong>: <em>Human<strong> </strong>rights, Human rights dynamics, State, R2P, Citizen</em><em></em></p>
Studies on Fingerprints of EDX, FTIR, XPS and TOF-SIMS Techniques and Applications in Failure Analysis of Wafer Fabrication
Authors: Younan Hua , Foo Lo Keng , Rao N. Ramesh , Mo Z. Q. 
Published: December 2020

Abstract
In failure analysis of wafer fabrication it is difficult to identify possible sources of carbon-related contaminants as most of them are from polymers, organic and complex compounds. In this paper, the fingerprints of EDX, FTIR, XPS and TOFSIMS techniques will be introduced so as to identify sources of carbon-related contaminants. For example, Si peak (1.740 keV) can be used as a fingerprint of EDX technique to identify the ink-related contaminant from the other carbon-related contaminants. FTIR spectra of more than 10 possible materials from wafer fab and assembly processes are discussed, which may be used as the fingerprints of FTIR technique to identify carbon-related contaminants. The C=O functional group and the PDMS (PolyDimethylSiloxane) are recommended as the fingerprints of XPS and TOF-SIMS techniques to identify source of carbon-related contaminants, respectively. In this paper, some application cases will be also discussed.
Studies of Galvanic Corrosion (Al-Ti Cell) on Microchip Al Bondpads and Elimination Solutions
Authors: Younan Hua , Zhiqiang Mo , Siping Zhao , Hao Gong 
Published: December 2020

Abstract
Galvanic corrosion (two metal corrosion) on microchip Al bondpads may result in discolored or non-stick bondpad problem. In this paper, a galvanic corrosion case at bondpad edge will be presented. Besides galvanic corrosion (Al-Cu cell), a concept of galvanic corrosion (Al-Ti cell) is proposed, which is used to explain galvanic corrosion at bondpad edge with layers of TiN/Ti/Al metallization structure. A theoretical model of galvanic corrosion (Al-Ti cell) is proposed to explain chemically & physically failure mechanism of galvanic corrosion at bondpad edge. According to the theoretical model proposed in this paper, galvanic corrosion on microchip Al bondpads could be identified into two corrosion models: galvanic corrosion (Al-Cu cell) occurred mostly at the bondpad center and galvanic corrosion (Al-Ti cell) occurred specially at bondpad edge with TiN/Ti/Al metallization structure. In this paper, a theoretical model of galvanic corrosion (Ai-Ti cell) will be detail discussed so as to fully understand failure mechanism of galvanic corrosion the bondpad edge. Moreover possible solutions to eliminate galvanic corrosion (Al-Ti cell) are also discussed.
PCB Related Field Failures with ImAg Surface Finishes
Authors: Kurella Anil , Munukutla Aravind , Lewis J.S. 
Published: December 2020

Abstract
PCB surface finishes like Immersion silver (ImAg) are commonly used in Pb-free manufacturing environments following RoHS legislation. With this transition, however the numbers of field failures associated with electrochemical migration, copper sulphide corrosion, via barrel galvanic corrosion are on a steady rise. More often than not ImAg surfaces seem to assist these failing signatures. As computers penetrate into emerging markets with humid and industrialized environments there is a greater concern on the reliability and functionality of these electronic components.
Electrical Signature Verification and Fault Localization in High-Density DRAM Device Using Atomic Force Probe
Authors: Wang Wei-Chih , Liew San-Lin , Chen Hua-Sheng , Chen Kuang-Liang , Luo Jian-Shing 
Published: December 2020

Abstract
Owing to the limitations of physical failure analysis (FA) techniques and fault localization techniques, the nano-probing tool, which has both the device characterization ability as well as the necessary sensitivity to characterize the non-visible defects and marginal fails, has emerged to be a powerful tool in the FA community. This paper presents a nano-probing technique on two yield impact cases in dynamic random access memory technology. The first case is related to a die that exhibited a high pin current issue during the parametric test sequence at the early stage of our probe test. The second case is related to a column fail expanding across a shared sense amplifier (SA) circuit. By comparing the nano-probing electrical results with simulation data and wafer acceptance test data, insufficient (S/D) contact implant which causes slower p-MOS turn-on and resistive source contact that causes lower driving ability in a SA transistor issue are concluded.
A New Failure Analysis Roadmap for Power Semiconductor Modules and Devices
Authors: Jacob Peter , Kunz Albert , Nicoletti Giovanni 
Published: December 2020

Abstract
In case of power semiconductor analysis, classical failure localization methods are restricted in application due to thick, closed metal layers and high-dose bulk-Si implants, making backside access difficult. Furthermore, defect traces in power semiconductors are often such severe that no conclusive FA is possible anymore. The new roadmap considers these specialties and shows ways how to deal with them, showing ways to conclusive results.
Challenges for Parametric Analysis of the Solar Cells Using Failure Analysis Technique Developed for the Microelectronics
Authors: Boostandoost M. , Ycaza X. , Leihkauf R. , Kerst U. , Boit C. 
Published: December 2020

Abstract
In this study, the challenges to transfer the microelectronics failure analysis techniques to the photovoltaic industry have been discussed. The main focus of this study was the PHEMOS as a tool with strong technological research capacity developed for microelectronics failure analysis, and OBIC (Optical Beam Induced Current) as a non-destructive technique for detecting and localizing various defects in semiconductor devices. This failure analysis tool was a high resolution optical infrared photon emission microscope used mainly in microelectronics for qualitative analysis and localization of semiconductor defects. Such failure analysis equipment was designed to meet requirements for modern microelectronic devices. Characterization of current photovoltaic device often requires quantitative analysis and should provide information about the electrical and material properties of the solar cell. Therefore, in addition to the demand for further data processing of the obtained results we had to study the corresponding operating regime of solar cells to allow for a correct interpretation of measurement results. In this paper, some of the related problems we faced during this study, e.g. large amount of data processing, the spatial misalignment of the images obtained as EL (Electroluminescence) and IR-LBIC (Infrared Light Beam Induced Current), the implemented laser wavelength, its profile and power density for IR-LBIC measurement. These topics have been discussed in detailed to facilitate a reliable transfer of these techniques from microelectronics to the photovoltaic world.
Surface Treatment for 20 nm SRAM Devices to Overcome Tip Curvature Radius Limitation in Conductive AFM Analysis
Authors: Ng Tsu Hau , James S. , Dawood M.K. , Limin P.S. , Tan H. , Tan P.K. , Lam J.C. , Mai Z.H. 
Published: December 2020

Abstract
Conductive-Atomic Force Microscopy (C-AFM) is a popular failure analysis method used for localization of failures in Static Random Access Memory (SRAM) devices [1-4]. The SRAM structure has a highly repetitive pattern where any abnormality in a failed cell compared to neighboring cells could be easily identified from its current image [5-7]. Unlike topographical imaging, the C-AFM requires the probe tip to be coated with a conductive layer in order to pick up the electrical signals from the device under test. The coating needs to be sufficiently thick as it would wear off after a certain amount of physical scanning. This additional coating on the AFM tip is essential but poses a limit to the tip radius curvature. The commercially available tip radius is approximately 35nm (DDESP-10 from Bruker) and the dimension is too large for imaging of 20nm technology device. However, the limitation could be alleviated by subjecting the sample surface to treatment prior to C-AFM imaging. The aim of this surface treatment is to ensure C-AFM tip maintains sufficient scanning contact with the tiny conductive (tungsten) structure of the sample in order to achieve distinct current image. The surface treatment is done by creating a receding Inter-Layer Dielectric (ILD) from its neighboring tungsten contact. The creation of the receding depth could be achieved by either wet etching or dry etching (Reactive Ion Etching, RIE). In this work, the surface treatments by these two methods have been investigated and the recipe is optimized to obtain a clear current image. The optimized recipe is then applied on actual failure analysis where three cases are studied.
Short Localization in 2.5D Microchip with Interposer Using Magnetic Current Imaging
Authors: Gaudestad J. , Nuez D. , Tan P. 
Published: December 2020

Abstract
Interposers used in 2.5D technologies introduce new challenges for Electric Fault Isolation (EFI) due to the multiple layers of silicon, metal layers, Through Silicon Vias (TSV), solder bumps and/or copper pillars making it hard for standard EFI techniques, such as thermal and optical techniques, to localize failures due to the opaqueness of these materials [1, 2, 3]. In this paper we show that shorts in 2.5D Integrated Circuits (IC) technologies can be localized accurately in x, y and z-direction using Magnetic Current Imaging (MCI) while injecting a low power current and showing that the materials used in 2.5D semiconductor manufacturing are fully transparent to magnetic fields.
Failure and Stress Analysis of Cu TSVs Using GHz-Scanning Acoustic Microscopy and Scanning Infrared Polariscopy
Authors: De Wolf Ingrid , Khaled Ahmad , Herms Martin , Wagner Matthias , Djuric Tatjana , Czurratis Peter , Brand Sebastian 
Published: December 2020

Abstract
This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs), used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz- SAM), which not only allows detection of defects like voids, cracks and delamination, but also the visualization of Rayleigh waves. GHz-SAM can provide information on voids, delamination and possibly stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress anisotropy in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.
Resistive Contrast Imaging—The Tool, Technique, and Applications on Leading-Edge Semiconductor Technology Devices
Authors: Ring Rosalinda M. , Newkirk Randy , Davidson Kevin , Capriola James , Russell Jeremy , Rummel Andreas , Carper Edward C. 
Published: December 2020

Abstract
The advances on IC technology have made defect localization extremely challenging. “Soft” failures (resistive vias and contacts) are typically difficult to localize using commonly available failure analysis (FA) techniques such as emission microscopy (EMMI) and scanning optical microscopy (SOM), and often cannot be observed by two-dimensional inspections using layer by layer removal. The article describes the Resistive Contrast Imaging (RCI) defect localization technique (also known as Electron Beam Absorbed Current (EBAC), instrumentations, and case studies on test structures or process control monitors especially designed to detect “soft” open failures on advanced (28nm and below) technology devices. It also lists the key SEM parameters critical for effective FA using the RCI nano-probing system.
SRAM Bitmap Validation Using Laser-Induced Damage for FinFET ICs
Authors: Lo William , Gupta Puneet , Venkatesh Rakshith , Schlangen Rudolf , Ng Roy , Li Jane , Marks Howard , Cory Bruce 
Published: December 2020

Abstract
Using a laser to purposely damage (or zap) a static random-access memory (SRAM) bitcell for bitmap validation purposes is a well-established technique. However, the absence of visible damage in FinFET SRAM cells, amongst other things, makes precision zapping in these devices more difficult. In this paper, we describe system enhancements and a modified workflow for bitmap validation of these devices using precision, near-infrared (NIR) laser-induced damage. We also explore the use of laser perturbation and non-precision zapping options. Examples are provided.
Non-Destructive Fault Localization in 2.5D Packages Using Electro Optical Terahertz Pulse Reflectometry
Authors: Zee B. , Qiu W. , Alton J. , White T. , Igarashi M. 
Published: December 2020

Abstract
Here, we demonstrate how electro optical terahertz pulse reflectometry (EOTPR) can be used to quickly and non-destructively isolate faults in 2.5D packages. We present case studies to show how EOTPR can unambiguously differentiate between faults located in the C4 bump, TSV, RDL, and micro-bump of a 2.5D package.
EBIC on TEM Lamellae for Improved Failure Localization and Root Cause Understanding
Authors: Lorut Frédéric , Bon Romain , Borowiak Céline , Larré Philippe 
Published: December 2020

Abstract
Nanoprobing and subsequent electron beam induced current imaging technique are commonly used techniques for fault localization. The failing structure/device being electrically tested, the behavior of the electrical characteristics allows to give hypothesis of the origin of the fail, while single device testing enables to restrict the physical characterization to the failing structure - either using FIB/SEM cross-sectioning or for advanced technology nodes, directly with a TEM lamellae performed at pointed site location. In this paper, an experimental setup to perform electrical-like mappings on a TEM lamella is implemented, as an additional step to the existing nanoprobing-TEM flow. Such an apparatus offers the ability to observe indirectly dopants distribution in a TEM thin foil, allowing a direct complement from a TEM specimen. Moreover, when applied on thicker TEM-like samples, the technique ability to localize subtle defects prior their physical characterization is demonstrated.
Nanoscale Chemical Mapping of Semiconductor Devices and Materials via PiFM
Authors: Park Sung , Nowak Derek , Albrecht Tom 
Published: December 2020

Abstract
Nanoscale microscopy is an important technique in analyzing current semiconductor processes and devices. Many of the current microscopy techniques can render high resolution images of morphology and, in some cases, elemental information. However, techniques are still needed to give definitive nanoscale mapping of compound materials utilized in semiconductor processes such as Si3N4, SiO2, SiGe, and low-k materials. Photo-induced force microscopy (PiFM) combines IR spectroscopy with atomic force microscopy (AFM) to provide concurrent information on topography and chemical mapping. PiFM measures the attractive dipole-dipole photo-response between the tip and the sample and does not rely on repulsive force arising from absorption-based sample expansion. As such, PiFM works well with many of the inorganic semiconductor compounds (with low thermal expansion coefficients) as well as organic materials (with high thermal expansion coefficients) [1]. In this study, various examples of nanoscale chemical mapping of semiconductor samples (surfaces processed via directed self-assembly (DSA), strain in SiGe/SiO2 structure, photoresist, etc.) will be presented, all demonstrating ~ 10 nm spatial resolution
Artifact-Free Decapsulation of Silver Wire Bonded Semiconductor Devices Using Microwave Induced Plasma
Authors: Tang J. , Wang J. , van den Hoek W. , Lohier D. , Forgerit B. , Gabaston G. , Beenakker C. I. M. 
Published: December 2020

Abstract
Decapsulation of silver wire bonded packages with known techniques often results in damaged silver wires. The chemical properties of silver and silver compounds make silver bond wire inherently susceptible to etching damage by acid, conventional plasma, and oxygen-based Microwave Induced Plasma (MIP). In this paper we solve this problem by developing a specific decapsulation chemistry, based on a hydrogen-containing MIP, for artifact-free decapsulation of silver wire bonded packages.
Dynamic Governance Dalam Pengelolaan Ruang Terbuka Hijau Di Kota Makassar
Authors: Fajri Yuni Kartika , Khaerah Nur , Razak Fitriani Sari Handayani 
Published: December 2020

Penelitian ini membahas tentang Dynamic Governance dalam pengelolaan Ruang Terbuka Hijau Di Kota Makassar. Lokasi penelitian ini bertempat di jalan Sultan Hasanuddin, kecamatan Ujung Pandang, kota Makassar.Jenis penelitian yang digunakan adalah deskriptif kualitatif yakni memberikan gambaran secara objektif terkait bagaimana keadaan sebenarnya objek yang diteliti, dan tipe penelitian yang digunakan adalah tipe fenomenologi. Adapun sumber data yang digunakan dalam penelitian ini adalah sumber data primer dan sumber data sekunder dengan jumlah Informan sebanyak 9 orang.Teknik pengumpulan data dengan menggunakan metode observasi, wawancara dan dokumentasi.Teknik Analisis data yang digunakan dalam penelitian ini yaitu membandingkan antara pendapat informan yang satu dengan yang lainnya dengan mengajukan pertanyaan yang sama. Hasil penelitian yang dilakukan menunjukakan bahwa Dynamic Governance dalam pengelolaan Ruang Terbuka Hijau di kota makassar belum berjalan dengan efektif. Hal tersebut terjadi karena kurangnya lahan untuk dijadikan Ruang Terbuka Hijau Publik sehingga masih kesulitan dalam memenuhi target RTH di kota Makassar.