bluuebunny/crossref_metadata_2025_split huggingface dataset:
Investigation of the High-Rate Recharging Mechanism in LiMn2O4 By Primary Particle Analysis
Authors: Ishikawa Satoshi , Ito Tomohiro , Tachibana Kazuhiro , Nishina Tatsuo 
Published: February 2020

Introduction
There were two types of lithium manganese oxide (LiMn2O4) supplied by different supplier. They showed similar crystal structure according to the XRD analysis, but the Li+ charging/discharging rate was quite different. To elucidate the working mechanism of this performance difference, we applied the SEM, AC impedance, and ESR measurement on LiMn2O4particles.
Results and discussion of the experimental
Two kinds of the lithium manganese oxides were used as the active material. The active material as the electrode, was implanted in the gold wire without any binder and conductive additive (99.99%). 1M LiPF6 / EC + DEC (1: 1 volume ratio) was used as the electrolyte, silver is used as a quasi-reference electrode, it was used platinum as a counter electrode.
In this experiment was measured the Cyclic voltammogram of the high-rate lithium manganese oxide (HR-LMO) and non-high-rate lithium manganese oxide NHR-LMO at the potential sweep rate v of 200 mV/s. The HR-LMO was continuously observed the two peaks. However, the NHR-LMO was not observed.
The SEM samples of the cross-section of the active material was prepared using an FIB system. The cross-sectional SEM photograph, was performed at an accelerating voltage of 5 kV using the LV-SEM.In this experiment the average particle diameter of primary particles is 30 nm in the HR-LMO, NHR-LMO were hundreds of nanometers at 10 times or more. This finding indicated that the rate performance of the active material was affected by the primary particles size.
The active material was placed into the impedance measurement jig (S = 1260 mm2, d = 0.9 ± 0.3 mm). The impedance |Z| and phase angle θwere measured by using the LCR meter (NF Corp., ZM-2355).The impedance |Z| of the HR-LMO and the NHR-LMO were 5 kΩ and 200 kΩ, respectively. The phase angle θwere -30 ° and -65 °, respectively. This finding indicated that the active material of the high rate performance was low impedance.5 mg of active material were placed into the cylindrical glass sample tube (inner diameter of 1 mm) as the ESR measurement tube, and the mass of the active material was measured. The ESR measurement tube was placed at the center in the ESR resonator. The ESR spectrum was observed by using the ESR spectrometer (JEOL, JES-RE3X).
The ESR signal of g=2.0 and ΔH=22.2 mT were observed in the HR-LMO. However, the ESR signal was not observed in the NHR-LMO. The ESR signal of g=2.0 may be due to electrons in conduction band, because this value is approximated to g=2.0023 of free electrons.
Preparation of Pre-Lithiated Sulfur Cathode By an in Situ Contacting Reaction
Authors: Wu Yunwen , Yokoshima Tokihiko , Nara Hiroki , Momma Toshiyuki , Osaka Tetsuya 
Published: February 2020

There is an increasing demand for the development of a new kind of secondary battery with high capacity and long cycle life. The sulfur cathode with the theoretical capacity of 1672 mAh/g (sulfur) has attracted researchers' attention.1 However, the Li-S batteries faces huge challenges because of the capacity fading caused by the polysulfide's shuttle effect and the safety issues caused by the lithium metal. Recently, researchers were attracted on the fabrication of metallic lithium free battery with the lithiated sulfur cathode.2 However, due to the high sensitivity of lithium sulfide (Li2S) to the moisture of air, this method have to be taken completely in an inert atmosphere, which raises the manufacturing cost and obstruct the access to commercialization. Consequently, it is urgent to introduce a new way to fabricate the lithiated sulphur cathode to meet the application requirement.
Herein, we prepared Li2S/KB cathode by an in situ synthesis method under the protection of ion-selective polypyrrole (PPy) layer. The anion doped PPy layer was deposited by electrodeposition method on S/KB cathode.3 The layer by layer structure of the cathode was proved by SEM analysis of the cross-section image (showed in Figure 1a). A lithium source was used to contact with the cathode in a wet environment and the lithium ions will go to the cathode by diffusion. The product of pre-lithiation was confirmed to be amorphous Li2S by XPS and XRD analysis. As Figure 1b shows, the first charge capacity can reach 1153 mAh/g (sulfur) at 0.1C rate after paired with a Li foil anode. This Li2S/KB cathode can be coupled with lithium free anode, such as graphite, Si to form a lithium free battery.

Figure 1. (a) Cross section FE-SEM image of the S/KB/PPy cathode. Inset is the FE-SEM image of the PPy layer of the S/KB/PPy cathode. (b) The charge and discharge of the pre-lithiated cathode at a charge rate of 0.1C.

Furthermore, the thickness of PPy was proved to influence the cyclability and capacity of the coin type cell. With the help of PPy, the shuttle effect will be alleviated by the ion-selective property of the PPy layer. Additionally, the lithiated S/KB cathode can be exposed to air for a short time because of the protection of PPy layer. We believe these properties of the lithiated S/KB cathode will provide possibility to assemble Li2S battery in air atmosphere and pave way to commercialization.

Acknowledgement

This work is supported by Advanced Low Carbon Technology Research and Development Program (JST-ALCA) Special Priority Research Area "Next-generation Rechargeable Battery”.

References

1. Manthiram, A.; Fu, Y.; Chung, S. H.; Zu, C.; Su, Y. S. Chem. Rev., 114, 11751-87 (2014).
2. Son, Y.; Lee, J.-S.; Son, Y.; Jang, J.-H.; Cho, J. Adv. Energy Mater.,
5, 1500110 (2015).
3. Nakamura, N.; Yokoshima, T.; Nara, H.; Momma, T.; Osaka, T. J. Power. Sources, 274, 1263-1266 (2015).

Figure 1
Development on High Energy Laminated Type Li Secondary Batteries Using Si-O-C Composite Anode and S/KB Composite Cathode with Glyme-Li Salt Solvate Ionic Liquid
Authors: Jeong Moongook , Yokoshima Tokihiko , Sugiyama Atsushi , Nara Hiroki , Mikuriya Hitoshi , Momma Toshiyuki , Osaka Tetsuya 
Published: February 2020

It is well known that sulfur is considered as a new generation cathode active materials of lithium secondary batteries because its abundance in nature, reversible electrochemical reaction with Li ion and very high theoretical specific capacity compared to the established commercial LCO electrodes (Li2S; 1166 mA h g-1, LiCoO2; 274 mA h g-1). We already introduced the Li-S battery prepared by the S/KB composite cathode and Li metal anode delivering high energy density of 200 Wh kg-1. In the previous work, 3D mesh structured Al foam was used as a substrate for the S/KB cathode active material to improve its loading amount. The S/KB composite cathode on the 3D mesh structured Al foam substrate was cycled with Li metal and glyme–Li salt solvate ionic liquid as an anode and an electrolyte. In this study, the S/KB composite cathode loaded on 3D mesh structured Al foam substrate was developed with Si-O-C composite anode. We have previously reported the Si-O-C composite anode which was prepared by electrodeposition technique using organic carbonate electrolyte. [1, 2] The Si-O-C composite achieved highly durable cycle ability with relatively high specific capacity showing 1045 mA h g-1-Si at the 2000th cycle and 842 mA h g-1-Si even at the 7200th cycle. Herein, we used specially treated Cu substrate showing high surface roughness to increase electrodeposited Si amount. The electrodeposited Si-O-C composite anode and the S/KB composite cathode were assembled with a Li activation electrode. The Li activation electrode was inserted for pre-activation process of the S/KB composite cathode and the Si-O-C composite anode. Afterwards, lithium pre-doping process of the full cell was carried out in aid of the Li activation electrode. As the result, we developed high energy laminated type lithium secondary battery using the Si-O-C composite anode and the S/KB composite cathode with glyme–Li salt solvate ionic liquid. Fig. 1 shows potential profiles of the S/KB composite cathode (a) and the Si-O-C composite anode (b) cycled by half-cell assembly for activation process. Furthermore, the loading amount of S/KB active material is succeeded to increase from 1.3 to 11.5 mg cm-2, which shows the promising potential on enlarging capacity of cathode.

Acknowledgements

This work was partly supported by Saitama Leading Edge Project “Development of community energy management system with secondary-batteries control for creating eco-towns”, Saitama Prefecture, Japan

References

[1] H. Nara, T. Yokoshima, T. Momma, T. Osaka, Energy Environ. Sci. 5 (2012) 6500-6505.
[2] T. Osaka, H. Nara, T. Momma, T. Yokoshima, J. Mater. Chem. A 2 (2014) 883-896.

Figure 1
Electrochemical Properties of LiNi0.85Co0.10Al0.05O2 synthesized By Using AAO(Anodic Aluminum Oxide) Template
Authors: Shin Mi-Ra 
Published: February 2020

Abstract

Recently, among various cathode materials for lithium batteries, LiCoO2 has been still use on the market due to electrochemical stability. However, LiCoO2 cathode materials have low thermal stability, high cost, low capacity. [1-2] Co and Al co-synthesized materials, Li(Ni,Co,Al)O2, are one of the most applicable materials due to the low cost, thermal stability than LiCoO2. Thus, the battery properties of lithium ion cell with LiNi0.85Co0.10Al0.05O2 cathode are better than LiCoO2. But, LiNi0.85Co0.10Al0.05O2 still show that capacity fading. [3] Anodizing method is an effective means of improving electrochemical performance. To improve the electrochemical properties of cathode material LiNi0.85Co0.10Al0.05O2 for a lithium-ion battery, LiNi0.85Co0.10Al0.05O2 cathode powders were prepared by sol-gel method in AAO template followed by heat treatment. The prepared compounds were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) studies and were subjected to charge-discharge cycling performance studies at different C-rates. Though the SEM, AFM, it was confirm that nano-rod for cathode material was obtained. [4]

References

[1] T. J. Park, J. B. Lim, and J. T. Son, Bull. Korean Chem. Soc.
2014
, Vol. 35, No. 2 357

[2] Z. R. Chang, X.Z. Yuan and H. Wang, Powder Technology 207 (2011) 396
–
400

[3] H. Kondo, T. Kamiyama and Y. Ukyo, J. Power Sources 174 (2007) 1131–1136

[4] S. B. Yang, C. Kim, B. C. Jang, and J. T. Son, J. Korean Physical Soc. Vol. 67, No.4 728~732

Acknowledgement

This study was supported by the granted financial resource from Korea National University of Transportation in 2016, the Ministry of Trade program of the Industry & Energy, Republic of Korea (G02N03620000901) and the Global Excellent Technology Innovation of the Korea Institute of Energy Technology Evaluation and Planning (KETEP).
Synthesis of LiCoO2 Thin Film on the Solid Electrolyte By Electro-Deposition Method -for the Fabrication of All-Solid Lithium Ion Battery-
Authors: Sonoyama Noriyuki , Yoshida Yuki 
Published: February 2020

Development of all solid state lithium ion batteries is desired for the prevention of inflammation of battery and increase in the energy density of battery system. But, the cost of current all solid battery system under the development is too high, because the deposition of each layer is carried out mainly by vapor deposition method or sputtering method, those require high vacuum condition. Recently, our group has developed the synthesis method of cathode material thin films composed of nano particles by sintering electrodeposited metal oxide precursor on the Au or carbon substrates. [1, 2] In this paper, we have attempted at synthesizing cathode material LiCoO2 on the surface of Au coated solid electrolyte, Li6.75La3Zr1.75Nb0.25O12 (LLZNb), by electrodeposition and subsequent sintering.
LLZNb was synthesized by solid phase method. Electrodeposition was carried out under a cathodic polarization of 1.7 V in 2M CoSO4 solution at 40˚C with bubbling oxygen gas. Obtained cobalt oxide film was sintered at 650˚C for 12h after dipping LiOH solution. The products were identified by XRD and Raman spectroscopy. The electrochemical properties of deposited film was examined by DC charge-discharge and AC impedance measurement using lithium metal anode at the other side of the electrolyte pellet.
In the figure, the charge-discharge curves of the solid battery synthesized on Au coated LLZNb. It was found that reversible charge-discharge with the capacity of 0.1 µAh can be obtained using this thin film solid battery.
Reference
[1] Z. Quan et. al., J. Power Sources. 244 (2013).
[2] N. Sonoyama et al., Solid State Ionics, 285, 106 (2016).

Figure 1
Lithium Titanium Sulfide Thin Film Cathodes for All-Solid-State Lithium-Ion Batteries: Taking Advantage of a Dual Cation and Anion-Based Redox Process
Authors: Le Cras Frédéric , Flamary Vincent , Dubois Vincent , Martinez Hervé , Pecquenard Brigitte 
Published: February 2020

The significant growth of both the number and the kinds of portable electronic systems, generally battery-powered has triggered the race for the development of high-performance microprocessors and systems on chips using low power consumption integrated circuits. As a consequence, the energy supply of such optimized components can also be ensured today by miniaturized power sources such as Li microbatteries. The latter have the advantage of being manufactured by vacuum deposition process also widely used in the microelectronics industry [1]. Nevertheless to be considered as an electronic components, the microbattery need to sustain temperature higher than 230°C for the reflow soldering to attach the component to the PCB . As Li metal anode melts at 181°C, Li microbatteries are not tolerant to such high temperature. For this reason we have manufactured Li-ion all-solid-state thin films batteries based on Si at the negative electrode and a new lithiated titanium oxysulfide as a cathode [2]. Lithium titanium sulphide thin films were synthesized by sputtering of LiTiS2 targets. Three different methods including chemical lithiation, solid state synthesis or spark plasma sintering steps were used to prepare the targets in-house and were found to influence the final composition of the films [3]. Due to the high reactivity of titanium, incorporation of some oxygen into the LiTiS2 film is inevitable. The limited oxygenation of the films that occurs, favours the occurrence of the S2-/(S2)2- redox process at the expense of the Ti3+/Ti4+ one during the battery operation. Finally, a perfect reversibility of both electrochemical processes is highlighted, whatever the initial oxygen content. All-solid-state lithium microbatteries using these amorphous lithiated titanium disulphide thin films and operated between 1.5-3.0 V/Li+/Li deliver a greater capacity (210-270 mAh g-1) than LiCoO2, with a perfect capacity retention (-0.0015 % cycle-1). Excellent electrochemical performances in terms of capacity value and cycling stability were also obtained in all-solid state Li-ion cells with Si as a negative electrode. After three successive solder-reflow processes (thermal treatment at 260°C), the capacity, the cycle life as well as the voltage profile remained unchanged. Finally, Li1.2TiO0.5S2.1 is confirmed as a new interesting lithiated positive material for thin film lithium and lithium-ion microbatteries. Moreover, as its synthesis does not require any thermal treatment (contrary to the well-known LiCoO2), is well-adapted to thermally sensitive substrates such as flexible polymers foils.
References:
[1] B. Fleutot, B. Pecquenard, F. Le Cras, B. Delis, H. Martinez et al., J. Power Sources, 196 (2011) 10289
[2] F. Le Cras, B. Pecquenard, V. Dubois, V.P. Phan et al., Adv.
Energy Mater., 5 (2015) 1501061
[3] V. Dubois, B. Pecquenard, S. Soulé, H. Martinez, F. Le Cras, submitted
Factors Affecting the Electrochemical Performance of Graphene like Graphite
Authors: Taninaka Junichi , Maruyama Shunya , Hashiguchi Katsuki , Matsuo Yoshiaki , Muramatsu Yasuji , Cheng Qian , Okamoto Yasuharu , Tamura Noriyuki , Murakami Tomoo 
Published: February 2020

Lithium-ion batteries with high energy density, compact size and good cycling performance are attracting much attention for the use of portable electronic devices, electric vehicles and energy storage devices. Graphite is mainly used for the anode materials of them, however, further improvements are needed in terms of both power and energy densities. It has been reported that graphene-based anode materials show high power density and capacity exceeding 1000 mAh/g. However, graphene is known to suffer from a large irreversible capacity due to its intrinsically large surface area. Recently, we have introduced a novel graphene like graphite (GLG) with low surface area and similar interlayer spacing to that of graphite, which was prepared from the thermal reduction of graphite oxide (GO). It showed the capacity of 600 mAh/g, high rate capability and higher coulombic efficiency. In this study, we have prepared GLG samples with various structural parameters and investigated their electrochemical performance in detail.
GO was prepared from natural graphite using modified Brodie’s method. The as-prepared GO was dispersed in 0.1M NH3 aq at various concentrations (0.2-3.0 mg/ml), then the dispersions were spray-dried at 100 or 150℃. The resulting GO samples were heated at 700 – 1000°C under vacuum and GLG with different structural parameters were obtained. The constant current charge-discharge measurement was performed using a two-electrode cell with lithium metal and 1M LiClO4-EC+DMC (1:1) as counter electrode and electrolyte, respectively.
The interlayer spacing, Lc, La and oxygen contents of the resulting GLG samples were 0.336 –0.353 nm, 7.1 – 57 nm, 7.8 -23 nm and 1.0 – 5.1 %, respectively. Based on these parameters and the shape of discharge curves of them, we have concluded that the oxygen content in them is more directly related to their capacity.
(Invited) SiOxNy Back-End Integration Technologies for Heterogeneously Integrated Si Platform
Authors: Nishi Hidetaka , Tsuchizawa Tai , Kakitsuka Takaaki , Hasebe Koichi , Takeda Koji , Hiraki Tatsuro , Fujii Takuro , Yamamoto Tsuyoshi , Matsuo Shinji 
Published: February 2020

Network traffic is continuously increasing, and the global IP traffic reaches 2 zettabytes in 2019 [1]. Photonic integrated circuits on Si-based substrates are highly demanded for coping with increasing telecommunication network traffic and energy consumption in low-cost ways. Particularly, Si and Ge provide modulators and photodetectors in telecom wavelength with a full monolithic way on SOI substrates. In addition, InP provides lightsources based on low-temperature direct-bonding technique. To connect these dynamic and active devices, we propose back-end photonic wiring by using SiOxNy-based waveguides. In this paper, I review recent progress of our work.
First, I briefly review our early work; Si-Ge-SiOx integration technology and application to the WDM receiver. To increase integration density, recently, we also have developed a silicon-nitride (SiN) waveguide[1]. SiN has moderately high refractive index and provides moderately small passive devices with tolerance for nonlinear effects. We confirmed 1-dB/cm propagation loss for 1.3-, 1.5-, and 1.6-um wavelength range and applied to a compact and low-loss 16-ch. arrayed-waveguide grating (AWG) filter with 200GHz spacing. In addition, for lightsource integration, a InP-wire waveguide was successfully integrated with the SiOx waveguide via a spot-size converter (SSC) on SiO2/Si substrates[2]. The fabricated InP waveguide provides 5.2-dB/cm propagation loss and connected to the SiOx waveguide with a 0.7-dB loss and less than -50-dB reflectance. The InP waveguide can be used as output waveguide for the membrane laser, which utilizes strong optical confinement within the active area to obtain high modulation efficiency and low power consumption[3, 4]. With introducing distributed-reflector (DR) laser structure, the membrane laser exhibits low threshold current of 0.6 mA, output power of 0.7 mW, and 25.8-Gbit/s NRZ direct modulation with 132-fJ/bit energy consumption. In addition, the output InP wire waveguide is successfully integrated with the SiOxwaveguide, which exhibits fiber coupling loss of 2.7 dB and low reflectance at the chip facet to obtain sufficient optical output power and stable single-mode operation.
[1] K. Okazaki et al., Proc. GFP 2014, Vancouver, paper WP43.
[2] H. Nishi et al., IEEE Photonics Journal, vol. 7, pp. 4900308, 2015.
[3] S. Matuso et al., J. Lightwave Technol., vol. 33, pp. 1217, 2015.
[4] H. Nishi et al., Proc. ECOC 2015, Valencia, paper We.2.5.3.
(Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics
Authors: Du Wei , Al-Kabi S. , Ghetmiri Seyed , Tran Huong , Pham Thach , Alharthi Bader , Mosleh Aboozar , Margetis Joe , Tolle John , Naseem Hameed A , Mortazavi Mansour , Sun Greg , Soref Richard , Li B , Yu Shui-Qing 
Published: February 2020

GeSn/SiGeSn techniques are of great interest in the area of Si photonics due to: 1) the industry scalable growth; 2) compatible with current Si complementary metal-oxide semiconductor (CMOS) process; 3) capability of monolithic integration on Si; 4) the identified group-IV based direct bandgap materials; and 5) the tunable bandgap allowing the optoelectronic devices operation features broad wavelength coverage in near- and mid-infrared ranges. In the past a few years, the GeSn/SiGeSn material growth, the materials and devices characteristics have been comprehensively studied. Plenty of promising results are reported.
In this work, the following aspects regarding GeSn/SiGeSn techniques are investigated: 1) low-defect material growth technique via Ultra High Vacuum Chemical Vapor Deposition (UHVCVD) system; 2) advanced material and optical characterizations of GeSn/SiGeSn thin films, Ge/GeSn/Ge double heterostructure (DHS), and GeSn/SiGeSn quantum well samples; 3) demonstration of GeSn-based optoelectronic devices including photodetectors and emitters.
Laterial Growth of High Quality GeSn Layers on Si Using Tin As Catalysts
Authors: Li Chuanbo , Yu Kai , Cheng Buwen 
Published: February 2020

GeSn is an important Si based semiconductor material. In 2015 it has been reported that a Si-based optical pumping lasing achieved from a direct-band-gap GeSn alloy. The introduce of Sn into GeSn alloy also induce a high-efficiency optical detection in the full-band communication at low concentration of Sn (approximately 3%). Moreover, GeSn alloy has higher carrier mobility than Ge. It has attracted lots of attention in recent years. However, due to the low solid solubility of Sn in Ge, easy segregation of Sn and large lattice mismatch, the growth of GeSn on Si is still a challenge. Some research groups recently realized high-quality GeSn alloy film by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), but the dislocation density is still high than 107cm-2. Here we report a new way to grow the defect-free GeSn alloy strips on Si substrates with the assistance of Sn. We realize the lateral growth of GeSn alloy strips on Si(111) by Sn self-catalyzed method. The GeSn materials are grown in a custom-designed MBE system with a base pressure of 5 × 10−8 Pa. The growth mechanism and the impact factors on the materials are studied. It is found that different depositions and annealing times of Sn are performed to observe the impact on morphology of the materials. Sn has an important impact on morphology of the GeSn materials. It is indicated that enough depositions and annealing times of Sn to match to the deposition of Ge will contribute to the growth of GeSn alloy strip. GeSn alloy strips show a good quality by the TEM micrographs and the SAED patterns. No dislocation is found in the grown material. The controlled growth of GeSn strips are also studied on pattered substrate. The results in this study will help us obtain the better GeSn materials for device applications.

Figure 1