bluuebunny/crossref_metadata_2025_split huggingface dataset:
Study of the Transport of Ions through an Anion-Exchange Membrane By Electrochemical Methods
Authors: Rodríguez Francisca Alicia , Rivero Eligio Pastor , Cruz-Díaz Martin Rogelio , Ortega Arturo , González I 
Published: February 2020

Studies of the ionic transport through ion exchange membranes and in their adjacent electrolyte films have become a topic of great importance, due to their different applications in environmental problems [1]. A better understanding of the phenomena and processes involved in the mass transport in devices with ion exchange membranes allows designing cells with higher performance and lower energy consumption. There are few studies about of transport of ions in membranes, Wang et al. (1990) studied the mass transport of monovalent cations across a polypyrrole membrane [2], Oulmi, (2012) [3] analyzed the transport of Na+ in cation-exchange membrane (CEM), in both previous work CEM are used, studies on anion-exchange membrane (AEM) are scarce, and the transport mechanism may be different from the one observed in a CEM. Therefore, in the present work, the transport of HSO4
- through AEM is studied. The system used consists of a cell of four electrodes, where anode and cathode are separated by an anionic-exchange membrane (Selemion) with an exposed area of 0.28 cm2 on each side. Two platinized titanium plates with an area exposed to the 10.8 cm2 are used as anode and cathode; two saturated calomel with Luggin capillaries were used as reference electrodes. The electrochemical studies were: open circuit potential, chronoamperometry of sampled current and cyclic voltammetry at different scan rate, H2SO4 concentration and different potential range.
The cyclic voltammograms at different H2SO4 concentrations are shown in the Figure 1. It exhibits that HSO4
- can transfer across the Selemion membrane due to a peak current. The peak current increases as the HSO4
- concentration increases, but when the species HSO4
- is depleted at the interface of the membrane, the intensity of current decreases until a limiting current is reached, similar to the phenomenon that occurs when a species depletes at the interface of an electrode/electrolyte [2]. By continuing to increase the potential, the current intensity begins to increase. The water splitting supplying new current carriers and giving rise to the so-called exaltation effect [4]. This phenomenon appears at all the HSO4
- concentration. On the other hand, electrochemical studies show that the transfer of the anions in the anion-exchange membrane (Selemion) is through a migration process and the adjacent films by migration and diffusion.

Figure 1
Optimum Design of Pore-Filled Ion-Exchange Membranes for Efficient Energy Conversion Applications
Authors: Kim Do-Hyeong , Song Hyeon-Bee , Park Jin-Soo , Kang Moon-Sung 
Published: February 2020

Ion exchange membranes (IEMs) have been widely employed in various water treatment processes such as electrodialysis for a desalination of sea or brackish water. Recently, they have also gained increased industrial importance in the applications to electrochemical energy conversion and storage processes such as reverse electrodialysis, fuel cells, and redox flow batteries. Their intrinsic properties such as electrical resistance and permselectivity are the key parameters dominating the electrochemical energy conversion efficiencies. The cost-effectiveness of ion-exchange membranes should also be considered for successful commercialization of the IEM process. In recent years, pore-filled IEMs (PFIEMs) in which an inert porous substrate provides excellent mechanical and chemical stabilities while a filling ionomer selectively transports ions through the membrane have been receiving great interests in the application to various separation and energy processes. In this work, we have investigated the optimum design parameters of the cost-effective PFIEMs for successful application to various IEM processes. In more detail, novel PFIEMs were successfully fabricated by combining a highly porous polymer (i.e. PTFE and PE) films and cationic polyelectrolytes with structurally stable anion-exchange sites for the applications to alkaline direct liquid fuel cells, all vanadium redox flow battery, and reverse electrodialysis. The prepared PFIEMs exhibited excellent electrochemical characteristics and stabilities and also remarkable energy conversion efficiencies have been achieved by employing them.
Acknowledgments:
This work was supported in part by the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (20153030031720) and the Technology Innovation Program funded by the Korea government (MOTIE) (No. 10047796).
Electrochemical Combustion of the Antibiotic Levofloxacin By Electro-Peroxone Process
Authors: Cornejo Oscar Miguel , Nava José Luis 
Published: February 2020

Over the last years pharmaceuticals have been receiving a lot of attention as emergent pollutants worldwide. These compounds can reach the environment through many vias, i.e. excretion in urine and faeces of humans and livestock, household disposal or hospital wastes and their concentration in water can vary between ng L-1 to mg L-1 [1]. Despite their low concentration these persistent organics can have adverse effects on the environment, for this reason its elimination is a big concern. Different processes have been tried to remove these compounds from water among which are the electrochemical advanced oxidation processes (EAOP´s) like electroFenton (EF), photo electroFenton (PEF), solar photo electroFenton (SPEF) and electro-peroxone (E-peroxone) [1]. E-peroxone is a relatively new process that employs two reactants, the electrogenerated hydrogen peroxide (via O2 reduction in acidic media) and ozone to produce homogeneous hydroxyl radicals [2]. The E-peroxone process has been studied for the removal of several pharmaceuticals showing great potential in their elimination from water [3]. This work deals with the removal of the antibiotic Levofloxacin (LVN) from synthetic wastewater using the E-peroxone process. The electrolyzes were performed in a laboratory flow plant containing 1.5 dm3 of solution having 50 mg dm-3 of LVN and 0.05 M NaSO4 as background electrolyte at pH 3; a Ti-Ir-Sn-Sb oxides was used as anode and a graphite felt on top of carbon cloth was used as gas diffusion cathode [4], where compressed air was fed at 0.36 psi of pressure. The trials were conducted at a constant cathodic potential (Ecat
) of -0.3 V vs SHE at a volumetric rate (Q) of 1.5 dm3 min-1. The results showed a chemical oxygen demand (COD) decay of 70 % at 6 hours of electrolysis. The influence of current density, O3 feed and initial concentration of LVN on the rate of degradation of LVN and mineralization current efficiency was also analyzed. Finally, the by-products of LVN were followed by chromatographic techniques to propose a reaction pathway.
[1] Sirés I., Brillas., E. Remediation of water pollution caused by pharmaceutical residues sed on electrochemical separation and degradation technologies: A review. Environmental International, 40 (2018) 212-229.
[2] Li X., Wang Y., Yuan S., Li Z., Wang B., Huang J., Deng S., Yu G. Degradation of the anti-inflammatory drug ibuprofen by electro-peroxone process. Water Research, 63 (2014) 81-93.
[3] Wang H., Zhan J., Yao W., Wang B., Deng S., Huang J., Yu G., Wang Y. Comparison of pharmaceutical abatement in various water matrices by conventional ozonation, peroxone (O3/H2O2), and an electro-peroxone process. Water Research, 130 (2018) 127-138.
[4] Pérez T., Coria G., Sirés I., Nava J.L., Uribe A.R. Electrosynthesis of hydrogen peroxide in a filter-press flow cell using graphite felt as air diffusion cathode. Journal of Electroanalytical Chemistry, 812 (2018) 54-58.
Simulations of H2-H2o Flow during the Electrolysis of Water in a Continuous Reactor Equipped with a Six-Cell Stack
Authors: Castañeda Ulloa Locksley Fabiàn , Nava José Luis 
Published: February 2020

Nowadays the electrochemical reactors in specific the filter-press type in parallel plates configuration are commonly used in industrial and laboratory applications and as multipurpose flow cells utilized in a widely range of electrochemical processes [1]. The characterization of the reaction environment inside of any filter-press reactor must be considered in the design to obtain effective flow dispersion, plus a uniform current and potential distribution. The hydrodynamics is so important inside the reaction environment, because the uniformity and magnitude of mass transport and therefore the current distribution depend on the flow pattern inside the cell, specifically near the electrodes. In many electrochemical processes such as chlorine production, water electrolysis, alumina reduction, electrocoagulation, and many other electrochemical processes appears gas release on the electrodes, H2 or O2 [2]. The hydrodynamic properties and the gas-flow motion in electrochemical cells is of great interest in practice, because the dispersed phase (gas) modifies the electrical properties of the electrolyte (as well as mass and heat transfers), and therefore the macroscopic cell performance. Therefore, this works deals with the H2O-H2 flow simulations inside of a pre-pilot-scale continuous reactor with a stack of six cells in a serpentine array by solving the Reynolds-averaged Navier-Stokes (RANS) equations with κ-ε turbulence model (Euler-Euler approach). The hydrogen evolution reaction comes from the electrolysis of water. The electrodes were plates of aluminum, typically used in electrocoagulation processes. In order to perform a more complete flow pattern characterization, residence time distribution (RTD) studies were carried out to validate the CFD simulations. The RTD simulations were calculated solving the averaged diffusion-convection equation. Close agreement between experimental and theoretical RTD simulations were attained. Finally, comparisons between H2O-H2 and single-phase flow (H2O) simulations were also performed, highlighting that the dispersed phase improves the dispersion of the continuous phase.
References
[1] F.F. Rivera, C. Ponce de Le_on, F.C. Walsh, J.L. Nava, The reaction environment in a filter-press laboratory reactor: the FM01-LC flow cell, Electrochim. Acta 161 (2015) 436e452.
[2] Lokmane Abdelouahed, Rainier Hreiz, Souhila Poncin, Gérard Valentin, Francois Lapicque, Hydrodynamics of gas bubbles in the gap of lantern blade electrodes without forced flow of electrolyte: Experiments and CFD modelling, Chem. Eng. Sci. 111 (2014) 255–265.
Nanomechanical Properties of Germanium-on-Insulator (GeOI) Films
Authors: Mohammed Yousuf , Zhang Kai , Baumgart Helmut , Elmustafa A A 
Published: February 2020

Silicon-on-insulator (SOI) is envisaged as a better alternative to bulk silicon due to its superb performance and less power consumption. The fabrication of the silicon-on-insulator (SOI) and strained silicon-on-insulator (SSOI) is accomplished using wafer bonding and the SMART CUT layer splitting technology for film exfoliation. Strained SOI (SSOI) substrates are specifically developed with SiGe straining layers for high mobility channel devices [1-3]. The fabrication of Germanium-on-Insulator (GeOI) proved to be the best choice material for Si-based photodetection. Ge possesses a strong linear absorption of up to 1.55 µm, a strong compatibility with Si CMOS process, and direct energy bandgap of 0.8 eV [4]. Also, Ge retains higher carrier mobility as compared to Si, which promises faster operation. Although the lattice mismatch parameter between Ge and Si is large i.e., 4.2%, epitaxial growth of high quality Ge thick films on Si can be accomplished.
GeOI films of 100, 220, 250, and 290 nm thick were fabricated using wafer bonding and Smart Cut technology.
The structural and surface properties were explored using field emission scanning electron (FE-SEM) and atomic force microscopy (AFM). The crystal structure and orientation of the films were examined using X-ray diffraction. The GeOI film thickness was verified using field emission scanning electron microscopy (FESEM) in cross-section as shown in Figure 1. The nanomechanical properties were measured using nanoindentation to determine the modulus and hardness of the GeOI films. Constant displacement indentations in CSM mode of 10% of the film thickness, to circumvent the substrate effects were performed on each film to study the film properties.

References

Mazure and A.J. Auberton-Herve, Proc. of 35th
European Solid-State Device Research Conf. ESSDERC, p. 29 (2005)

A. Langdo, M. T. Currie, Z.-Y. Cheng, J.G. Fiorenza, M. Erdtmann, G. Braithwaite, C.W. Leitz, C.J. Vineis, J. A. Carlin, A. Lochtefeld, M. T. Bulsara, I. Lauer, D.A. Antoniadis, M. Somerville, Solid-State Electronics,
48 , 1357 (2004).

I. Cayrefourcq, A. Boussagol and G. Celler, in SiGe and Ge: Materials, Processing, and Devices, ECS Trans. 3, (7), 399 (2006)

Figure 1
Pulse Electrodeposition of Cu through-Silicon-Via (TSV) with Surface Suppressor
Authors: Lee Jinhyun , Park Kimoon , Kim Youjung , Yoo Bongyoung 
Published: February 2020

In recent years, many researches have been focused on the miniaturization of the integrated circuit (IC) feature size to improve the performance of semiconductor devices. However, we are facing the problems such as physical limit of the miniaturization and then increasing processing cost. To overcome these problems the Through-Si-Via (TSV) interconnection, a kind of the 3D interconnection, is a promising technology that could achieve high density, lower energy consumption and high performance in the IC.
Since the TSV filling process is costly in the entire TSV process, the TSV filling process which the Cu electrodeposition for TSV is one of key processes. The TSV bottom-up filling which the filling of Cu from the bottom to the top of via with suppressed lateral growth is the solution to ensure a void free filling in high aspect ratio TSV. The bottom-up filling could be achieved by using additives like a suppressor and an accelerator in the electrolyte.
In a theoretical model, the suppression breakdown at the bottom of TSV cause the bottom-up filling of TSV. Simultaneous desorption of suppressor by high potential due to ion depletion in the via bottom leads focus of current at the via bottom. Due to adsorption/desorption behavior of the suppressor, the bottom-up TSV filling could be achieved by only using the suppressor.1-3 Furthermore, it was reported that the suppressor at the sidewall is replaced by the accelerator and then the bottom-up filling performance was degraded.3

Lu et al. introduced the nanotwin Cu thin film, which had been attained with pulse electrodeposition.4 Mechanical properties of the Cu thin film is significantly enhanced by highly dense coherent twin boundaries without the degradation of electrical conductivity. Because it could effectively block the dislocation motion without interrupting the migration of electrons.4 The mechanical property of TSV interconnection such as thermal behavior is important as well as the electrical property including electrical conductivity for improvement TSV performance. Therefore, the nanotwin Cu is proper for the TSV interconnection.
In this study, nanotwin Cu was applied to fill into high aspect ratio of via (diameter = 5 µm, depth = 60 µm) with pulse current conditions. The deposition condition between direct current and pulse current was compared to observe the filling characteristics. The mechanical properties as the thermal expansion behavior, which is critical to adopting integrated devices, of nanotwin Cu were investigated. As a result, the results with pulse current condition showed obvious improved the TSV filling property than direct current condition.
1. T. P. Moffat and D. Josell, J. Electrochem. Soc., 159, D208 (2012).
2. T. Moffat and D. Josell, Journal of The Electrochemical Society, 159, D208 (2012).
3. L. Yang, A. Radisic, J. Deconinck, and P. M. Vereeckena, J. Electrochem. soc., 160, D3051 (2013).
4. L. Lu, Science, 304, 422-426 (2004).
(Invited) 2D MoS2 Memristors with Variable Switching Characteristics
Authors: Liang Xiaogan , Li Da 
Published: February 2020

Memristors has been extensively studied as an important candidate device structure for realizing non-Von Neumann computers, neuromorphic and analog computing systems. The conventional memristors are made from transition metal oxides such as TiOx, TaOx, WOx, and HfOx.1 The conductance states of such memristors can be adjusted through modulating the distribution of oxygen vacancies in the oxide channels. Recently, memristor-like transport behaviors have been also observed in the electronic devices made from emerging 2D-layered transition metal dichalcogenides (TMDCs, such as MoS2 and WSe2).2 Such emerging 2D-material-based memristors could be used for constructing novel neural networks with a significantly improved level of connectivity and enabling bio-realistic emulation of brain neuron functions. Therefore, it is highly desirable to further perform nanofabrication and nanoelectronics research to fully explore the applicability and advantage of 2D-TMDC-based memristors for practical neuromorphic applications.
Here, we present a study on the nanofabrication and characterization of memristive devices based on mechanically printed few-layer MoS2 structures. This work shows that mechanically printed MoS2 memristors with critical thicknesses exhibit a very low threshold electric field for initiating memristive-switching processes, which is essential for the successful construction and operation of energy-efficient memristor-based neural networks. More importantly, such MoS2 memristors exhibit both analogue (i.e., gradient) and discrete switching characteristics, which could be further exploited for making reconfigurable memristors for both analog and digital computing applications.
This work leveraged the unique transport properties of 2D layered MoS2 for memristor-related applications and advanced the scientific/technical knowledge for controlling memristive switching behaviors.
(Invited) in-Vacuo Studies of MBE Grown Transition Metal Dichalcogenides
Authors: Litwin Peter M , McDonnell Stephen John 
Published: February 2020

Here we present recent work on the synthesis and characterization of two-dimensional transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE). Bulk TMD crystals consist of two-dimensional layers bonded together by van der Waal interactions; the lack of primary bonds at the TMD interface allow for the growth of TMD heterostructures on a variety of substrates without the need to consider lattice constant mismatch or crystal structure of the substrate which we aim to demonstrate. TMDs are grown and characterized in an all in-vacuo ultra-high vacuum system which enables the simultaneous co-deposition of multiple transition metals and chalcogens allowing for the study of TMD ternary alloys and layered heterostructures followed by their compositional and intrinsic electronic characterization prior to atmospheric exposure. Presented will be a review of our work studying the interface chemistry between TMD and conventional semiconducting substrates, as well as our investigations of 2D-2D heterostructure grown by MBE.
Figure 1 shows an example of in-vacuo x-ray photoelectron spectroscopy (XPS) carried out on GaAs(001) before an after the growth of monolayer MoSe2. The sample was initial passivated by a sulfur based treatment, and the presence of sulfur bonded to the surface can be observed in the As 2p and Ga 2p spectra. The asymmetry observed in the As 2p and Ga 2p core-levels suggest that some reactions with Se take place during the growth. The thermal stability of this interface will be investigated using in-situ UHV heating and XPS.
In separate work we evaluated the valence band offsets using in-vacuo XPS and UPS (ultraviolet photoelectron spectroscopy). This is achieved by measuring core-level to valence band maximum separation for control samples as well as the core-level shifts in heterostructure. In-vacuo XPS analysis can also be used to reveal any interface reactors that may occur between the TMDs. It is found that for chalcogen deficient growths, metallic signatures can be detected.
Of particular interest is the process structure relationships. Presented will be parametric studies showing impact of growth temperature and relative metal-chalcogen flux ratios on the electronic structure and interface chemistry in both the 2D-2D and 2D-3D systems. The all in-vacuo synthesis and analysis cluster tool allows these investigations to be carried out without air exposure which can induce substantial changes in the chemistry of these materials.

Figure 1
Multiscale Simulation of the Fabrication Process of Lithium Ion Battery Electrodes
Authors: Franco Alejandro A. , Ngandjong Alain , Rucci Alexis , Primo Emiliano 
Published: February 2020

I present here our ongoing efforts at developing and demonstrating a multiscale computational framework devoted to rationalize the formulation of lithium ion battery composite electrodes containing next-generation material chemistries. The framework is being established through the combination of discrete particle (Coarse Grained Molecular Dynamics) and continuum mathematical models within a multiparadigm and multiscale approach mimicking the different steps along the electrode fabrication process, i.e. slurry preparation, drying and calendering. In strong complement to dedicated experimental characterizations, the theoretical framework provides fundamental insights on self-organization mechanisms of material mixtures in slurries and on the relationship between the materials properties, the electrode composition (formulation), the fabrication process layout and the arising electrode microstructure.
Practical application of the framework to lithium ion battery electrodes based on NMC materials is presented. Finally, I discuss its potential to provide insights leading to proposals of new and highly efficient industrial techniques for the fabrication of cheaper and reliable next-generation lithium ion battery electrodes for a wide spectrum of applications, including Electric Transportation.

References

ERC Project "ARTISTIC" (Advanced and Reusable Theory for the In Silico- optimization of composite electrode fabrication processes for rechargeable battery Technologies with Innovative Chemistries) (European Research Council funded project, grant agreement No. 772873).
A. Ngandjong, A. Rucci, M. Maiza, G. Shukla, J. Vazquez-Arenas, A.A. Franco, "Towards A Multiscale Simulation Platform Linking Lithium Ion Battery Electrode Fabrication Process With Performance At The Cell Level", J. Phys. Chem. Letters, 8 (23) (2017) 5966.
A.A. Franco, M.L. Doublet, W. Bessler, Eds., book title: "Multiscale Modeling and Numerical Simulation of Electrochemical Devices for Energy Conversion and Storage", Springer, UK (2015).