bluuebunny/crossref_metadata_2025_split huggingface dataset:
Application of Single Contact Optical Beam Induced Currents (SCOBIC) for Backside Failure Analysis
Authors: Palaniappan M. , Chin J.M. , Phang J.C.H. , Chan D.S.H. , Soh C.E. , Gilfeather G. 
Published: December 2020

Abstract
The Single Contact Optical Beam Induced Currents (SCOBIC) is a new failure analysis technique, which allows the imaging of junctions by a single connection to the substrate or power pin of an integrated circuit. Modern packaging technologies and multi-layer metallizations has increased the need for backside IC failure analysis. In this paper, the SCOBIC technique is used to image junctions from the die backside. The implementation of backside SCOBIC system is discussed. Application of the SCOBIC technique from both the frontside and backside of CMOS and NMOS devices are presented.
A Focused Ion Beam Technique to Electrically Contact the Deep Trench Capacitor of a Single Active Memory Cell in the Sub 0.25µm Technology Regime
Authors: Zimmermann Gunnar , Johnston Mark , Christ Rolf 
Published: December 2020

Abstract
Focused ion beam (FIB) techniques are continuously improved to meet the demands of shrinking device dimensions and new technologies. We developed a simultaneous milling and deposition FIB technique to provide electrical contact to small buried targets in semiconductors. This method is applied to directly connect the deep trench (DT) capacitor of a DRAM single cell in deep submicron technology. By carefully adjusting the deposition parameters (scanned area &lt; (0.3 µm)2, beam current &lt; 20 pA) we are able to influence diameter, depth and Pt fill properties of the hole to meet the very restricted requirements for successful DT connection (hole diameter &lt; 200 nm at DT level). Electrical measurements are performed on DRAM single cells after connecting buried plate (n-band), p-well, wordline, bitline and DT. The probe pads were Pt, deposited with ion beam assistance, on top of highly insulating SiOx, deposited with electron beam assistance by using a dualbeam FIB. The read and write conditions of an active memory cell are studied. The presented method increases the capabilities to localize and characterize trench related failure mechanisms.
Humidity-Bias Driven Shorts in Multilayer Circuits: A Case Study in Failure Analysis
Authors: Jen Hei-Ruey Harry , D’Urso Gerald S. , Andrews Harold 
Published: December 2020

Abstract
When a failure analysis (FA) involves a multiple layer structure separated by a polymeric material such as Benzocyclobutene (BCB), in a plastic package, it becomes a very challenging task to find out where the failure site is and how it failed. This is due to the fact that the chemical de-processing procedure removes BCB as well as the plastic molding compound. This paper outlines the studies carried out to determine the failure site and the root cause of the failure mechanism in a multilayer circuit and the steps taken to fix the problems. The methodology and results of this study are applicable to many other types of circuits.
Passivation Cracks in a Four-Level Metal Low-K Dielectric Backend Process
Authors: Olewine Michael C. , DiGregorio John F. , Colovos Gus J. , Saiz Kevin F. , Sun Hongjiang 
Published: December 2020

Abstract
Mechanical stress problems in integrated circuit devices are becoming more severe as the number of metal interconnect levels increases and new materials such as low-k dielectrics are introduced. We studied dielectric cracking in a four-level Al-Cu interconnect structure that uses hydrogen silsesquioxane (HSQ), a low dielectric constant (low-k) material. The cracks extended down through the passivation layers to the HSQ layer. For the first time we report on passivation dielectric cracks directly related to the level of residual fluorine in a plasma enhanced chemical vapor deposition (PECVD) reactor. It is shown that a silicon nitride pre-coat deposition removes fluorine (F) from the reactor ambient and prevents the dielectric cracks.
pn Junction Delineation in Si Devices Using Scanning Capacitance Spectroscopy
Authors: Edwards Hal 
Published: December 2020

Abstract
The scanning capacitance microscope is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SCM). Scanning capacitance spectroscopy (SCS) is useful to utilize an SCM to delineate pn junctions in Si devices. This article reports the applications of SCS to Si devices such as CMOS and BiCMOS. SCS is shown to resolve device features on the 10 nm scale for several technologies. Ongoing work includes verifying the reproducibility of SCS measurements and using physical modeling to support the empirical assignment of depletion region width and electrical pn junction position from SCS data. Another technology area where two-dimensional pn junction data is useful is in CMOS device isolation.
Contactless Voltage and Current Contrast Imaging with Scanning Force Microscope Based Test Systems
Authors: Mertin W. , Bae S.-W. , Behnke U. , Weber R. , Kubalek E. 
Published: December 2020

Abstract
Significant improvements in the performance of modern integrated circuits (ICs) require also an increase of the performance of the used circuit internal test techniques regarding bandwidth, spatial resolution, and sensitivity. Due to its outstanding lateral and vertical spatial resolution in the nanometer regime scanning force microscopy (SFM) based on scanning probe microscopes is well suited for the investigation of very small structures. Furthermore it has been demonstrated that with SFM also electric signals can be contactless tested. This feature can be used for a circuit internal failure analysis of ICs. In this paper principles, examples, and the state-of-the-art of voltage and current measurement based on SFM will be presented.
Transparent Heat Spreader for Backside Optical Analysis of High Power GHz-Scale Microprocessors
Authors: Eiles Travis M. , Hunt Dean , Chi David 
Published: December 2020

Abstract
Optical probing using the Schlumberger IDS-2000 and other infrared-based analysis techniques have proved to be critical in the debug and analysis of flip-chip-packaged microprocessors. During probing, processors are operating with test patterns that generate a large amount of power. This article demonstrates a method for dissipating the generated heat based on a diamond window-based transparent heat spreader. This method controls the microprocessor temperature to a high degree of stability, and reduces thermal gradients across the die. Waveform results are excellent, and the transparent heat spreader provides a path for optical probing to be applied to the entire range of integrated circuit applications. The discussion covers cooling system requirements, and standard configuration specifications, and shows how the transparent heat spreader technique is effective for probing high power microprocessors.
Application of Near IR, Phase-Contrast Imaging to Backside Failure Isolation and Analysis
Authors: Falk R. Aaron , Budiarto Edward W. 
Published: December 2020

Abstract
The move towards flip-chip type packaging has produced significant obstacles for failure analysis. One such obstacle is the breakdown of traditional techniques for failure isolation via thermal mapping, typically used to isolate short circuits and leakage paths. This paper describes the application of near infrared (IR) phase-contrast techniques to allow highly sensitive, ~ 10mK, thermal mapping for backside failure analysis.
Current Image Atomic Force Microscopy (CI-AFM) Combined with Atomic Force Probing (AFP) for Location and Characterization of Advanced Technology Node
Authors: Tong Tom X. , Erickson A. N. 
Published: December 2020

Abstract
Many of the standard techniques of Failure Analysis (FA) are breaking down or becoming less useful as feature sizes drop below 100nm. The tenth micron milestone appears to be a fundamental limitation to many common techniques. Use of Current Image-Atomic Force Microscopy (CI-AFM) combined with Atomic Force Probing (AFP) brings about a combination of technologies, which allow for extension of FA below the nano-scale.
A Comparison of Lock-in Thermography and Magnetic Current Imaging for Localizing Buried Short-Circuits
Authors: Vallett David P. 
Published: December 2020

Abstract
The relative effectiveness of lock-in thermography and magnetic current imaging for identifying defects in packaged ICs was studied by directly comparing results on the same three devices. One known (in-lab fabricated) and two unknown (field return) defects were studied in organic flip-chip and wirebond configurations. Both methods succeeded in identifying the defective area but significant differences were observed in the qualitative nature of the signals, XY localization resolution, and sensitivity. Depth estimates were obtained where possible which aided in localization.
Laser Voltage Imaging: New Perspective Using Second Harmonic Detection on Submicron Technology
Authors: Celi Guillaume , Dudit Sylvain , Parrassin Thierry , Vallet Michel , Perdu Philippe , Reverdy Antoine , Lewis Dean 
Published: December 2020

Abstract
The Laser Voltage Imaging (LVI) technique [1], introduced in 2009, appears as a very promising approach for Failure Analysis application which allows mapping frequencies through the backside of integrated circuits. In this paper, we propose a new range of application based on the study of the LVI second harmonic for signal degradation analysis. After a theoretical study of the impact of signal degradation on the second harmonic, we will demonstrate the interest of this new approach on two case studies on ultimate technology (28nm). This technique is a new approach of failure analysis that maps timing degradation and duty cycle degradation. In order to confirm the degradations we will use the LVP Technique. The last part is two real case studies on which this LVI second harmonic technique was used to find the root cause of a 28nm process issue.
Non-Destructive Open Fault Isolation in Flip-Chip Devices with Space-Domain Reflectometry
Authors: Qiu W. , Wei M.S. , Gaudestad J. , Talanov V.V. 
Published: December 2020

Abstract
Space-domain reflectometry (SDR) utilizing scanning superconducting quantum interference device (SQUID) microscopy is a newly developed non-destructive failure analysis (FA) technique for open fault isolation. Unlike the conventional open fault isolation method, time-domain reflectometry (TDR), scanning SQUID SDR provides a truly two-dimensional physical image of device under test with spatial resolution down to 30 μm [1]. In this paper, the SQUID SDR technique is used to isolate dead open faults in flip-chip devices. The experimental results demonstrate the capability of SDR in open fault detection
Failure Analysis of Bit Line to SNC Leakage Fail in 2x nm DRAM Using Nano-Probing Technique
Authors: Won Jaeho , Kim Jundong , Kim Jina , Shin Jihye , Kim Jihoon , Lee Kyungrim , Yoon Miae , Lee Jonghak , Lee Jaeyoon , Suh Weonjoon , Kim Hyeonsoo 
Published: December 2020

Abstract
Leakage current from bit line to SNC (Storage Node Contact) is one of the most critical issues in DRAM operation. Such failure becomes more difficult to visualize as the device shrinks. In this study, bit line to SNC leakage fail was analyzed using nano-probing tool in 2xnm DRAM technology.
Failure Analysis Strategies for Multistacked Memory Devices with TSV Interconnects
Authors: Altmann Frank , Grosse Christian , Naumann Falk , Beyersdorfer Jens , Veches Tony 
Published: December 2020

Abstract
In this paper we will demonstrate new approaches for failure analysis of memory devices with multiple stacked dies and TSV interconnects. Therefore, TSV specific failure modes are studied on daisy chain test samples. Two analysis flows for defect localization implementing Electron Beam Induced Current (EBAC) imaging and Lock-in-Thermography (LIT) as well as adapted Focused Ion Beam (FIB) preparation and defect characterization by electron microscopy will be discussed. The most challenging failure mode is an electrical short at the TSV sidewall isolation with sub-micrometer dimensions. It is shown that the leakage path to a certain TSV within the stack can firstly be located by applying LIT to a metallographic cross section and secondly pinpointing by FIB/SEM cross-sectioning. In order to evaluate the potential of non-destructive determination of the lateral defect position, as well as the defect depth from only one LIT measurement, 2D thermal simulations of TSV stacks with artificial leakages are performed calculating the phase shift values per die level.
Visible Laser Probing (VLP) with GaP Solid Immersion Lens Demonstrating 110 nm Resolution in Common Laser Probing Applications
Authors: Eiles Travis , Pardy Patrick 
Published: December 2020

Abstract
This paper demonstrates a breakthrough method of visible laser probing (VLP), including an optimized 577 nm laser microscope, visible-sensitive detector, and an ultimate-resolution gallium phosphide-based solid immersion lens on the 10 nm node, showing a 110 nm resolution. This is 2x better than what is achieved with the standard suite of probing systems using typical infrared (IR) wavelengths today. Since VLP provides a spot diameter reduction of 0.5x over IR methods, it is reasonable, based simply on geometry, to project that VLP using the 577 nm laser will meet the industry needs for laser probing for both the 10 nm and 7 nm process nodes. Based on its high level of optimization, including high resolution and specialized solid immersion lens, it is highly likely that this VLP technology will be one of the last optically-based fault isolation methods successfully used.
Electron Beam Induced Resistance Change for Device Characterization and Defect Localization
Authors: Johnson Gregory M. , D’Aleo Christopher , Xu Ziyan , Kwon Unoh , Berman Harvey , Feng Yi , Darling Scott , Yates Brian , Wang Yun , Kagerer Markus , Newton Robert 
Published: December 2020

Abstract
Semiconductor Test Site structures were analyzed using an EBIRCH (Electron Beam Induced Resistance CHange) system. Localization of a RX (active area) to PC (gate) short was achieved with resolution that surpassed that of OBIRCH (Optical Beam Induced Resistance CHange). A voltage breakdown test structure at Metal 1 was stressed in the system, giving isolation to the specific contact. A five-fin diode macro was examined, and it is believed that the electrically active diffusions were imaged as individual fins from Metal 1. A series of ring oscillator devices were examined in steady state condition, and careful consideration of the image supports a hypothesis that Seebeck effect, from heating material interfaces in an EBIRCH system, is the reason for the “dipoles” reported in earlier literature.
ATPG Testing and Diagnosis Implementation in Failure Analysis for a Fast and Efficient Iterative ATPG Diagnosis and Fault Isolation
Authors: Barbian Eric , Estores Rommel 
Published: December 2020

Abstract
This paper will present a practical implementation of ATPG testing and diagnosis in Failure Analysis resulting in a fast and efficient iterative ATPG diagnosis and fault isolation. On this implementation, a compact test HW instead of an ATE is used for cost-effective ATPG testing and characterization capability. The advantages of this implementation are combined with ATPG tools to make it possible to achieve a faster and more efficient implementation of iterative ATPG diagnosis, Dynamic Analysis by Laser Stimulation (DALS) analysis or similar techniques. The requirements needed in order to implement ATPG testing and diagnosis in FA lab will be discussed. Success in determining root cause, especially on the complex analysis cases is determined by the complimentary combination of various fault isolation techniques. Knowledge of the fundamentals of these techniques combined with creative thinking process of the analyst leads to the approaches and solutions that maximize the combined advantages of these techniques.
Precision Xe Plasma FIB Delayering for Physical Failure Analysis of Sub-20 nm Microprocessor Devices
Authors: Zudhistira D. , Viswanathan V. , Narang V. , Chin J.M. , Sharang S. , Novotny K. , Oboňa J. Vincen 
Published: December 2020

Abstract
Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application of this technique to delayer sub-20 nm microprocessor chips with real defects to root cause the failure is presented.
Re-Packaging Solution of Bare Dice From Customer Packages To Open-Cavity Ceramic Packages
Authors: Mendaros Raymond G. , Mazon Bernardino D. , Capito Eugene , Soriano Romeo S. 
Published: December 2020

Abstract
The advent of bare die form in the semiconductor industry driven by the high-performance multichip modules’ (MCM) requirement posed electrical access and testing challenges on customer returned units (CRUs) for failure analysis (FA). In this technical literature, the developed die extraction processes and re-packaging solution on molded MCM and flex package types were discussed.
A FORMAÇÃO DE PROFESSORES PARA AS (CON)VIVÊNCIAS EM SOCIEDADE
Authors: Prestes da Silveira Dieison , Da Costa Dias Scheffer Denise 
Published: December 2020

A formação de professores é uma temática que necessita de constantes debates e provocações dentro do campo do saber, visto que permeia o processo formativo crítico e reflexivo dos sujeitos para as (con)vivências em sociedade. Diante da necessidade de ampliar as discussões envolvendo a formação de professores, o presente artigo busca analisar o processo formativo de docentes, atentando para o processo de ensino e aprendizagem, bem como o papel dos educadores para a construção de momentos críticos e reflexivos, visando o processo de emancipação social dos escolares. Em se tratando de metodologia, pode-se dizer que esta pesquisa apresenta uma abordagem do tipo qualitativa, tendo por base estudos em referenciais bibliográficos. A formação de professores deve permitir a construção de saberes, vivências e experiências e, sempre que necessário, o professor deve dinamizar o processo de ensino e aprendizagem, atentando para a pluralidade de identidades presentes dentro dos ambientes educacionais. Percebe-se, portanto, a importância do debate envolvendo a formação de professores, visando a construção de sujeitos críticos, autônomos e reflexivos e que saibam atuar com responsabilidade no meio sociocultural.
Pengembangan Buku Ajar Fisika Berbasis Kotekstual pada Materi Medan Magnetik Siswa Kelas XII SMA Negeri 2 Muara Beliti
Authors: Aryansi Dela , Yolanda Yaspin 
Published: December 2020

Penelitian ini bertujuan mengembangan buku ajar fisika Berbasis Kontekstual Materi Medan Magnetik pada Siswa Kelas XII SMA Negeri 2 Muara Beliti. Metode penelitian dalam penelitian ini yaitu Research and Developmen, sedangkan model pengembangan yang digunakan adalah ADDIE dengan 5 tahapan Analyze, design, devlopment, inplementation dan evaluation. Populasi dalam penelitian ini adalah kelas XII IPA 3 dengan 28 orang siswa. Teknik pengambilan sampling menggunakan porposive sampling yang menggunakan 6 orang sampel. Teknik pengumpulan data dalam penelitian ini menggunakan wawacara, observasi, soal tes diagnosis, angket validasi ahli, angket respon guru, angket respon siswa dan buku ajar Fisika Berbasis Kontekstual. Hasil analisis data angket validasi dengan 3 ahli validator yaitu hasil validasi materi dosen fisika 42, hasil validasi materi guru fisika dengan skor 46. Hasil validasi ahli bahasa mendapatkan skor sebesar 18, hasil validasi ahli media mendapatkan skor sebesar 35, sehingga skor akhir yang didapatkan setelah validasi sebesar 35 dengan katagori sangat baik, hasil angket respon 6 siswa diperoleh skor sebesar 3,7 dengan katagori sangat setuju dan hasil angket respon guru dan siswa mendapat skor sebesar 3,6 dengan katagori sangat setuju. hasil nilai uji kompetensi untuk menunjang kepraktisan memperoleh nilai uji kompetensi yang didapat rata-rata 80,3% tuntas mencapai ≥ 75. Sehingga dapat dikatakan bahwa Buku Ajar Fisika Berbasis Kontekstual Materi Medan Magnetik pada Siswa Kelas XII SMA Negeri 2 Muara Beliti Telah Valid Dan Praktis.
Investigating the Mental Health Impacts of University Campus Green Space Through Perceived Sensory Dimensions and the Mediation Effects of Perceived Restorativeness on Restoration Experience
Authors: Malekinezhad Fahimeh , Courtney Paul , bin Lamit Hasanuddin , Vigani Mauro 
Published: December 2020

Introduction: Green spaces support people mentally in their everyday life. Perceived restorativeness and Perceived Sensory Dimension (PSD) have been addressed as optimal environmental related characteristics with regards to psychological restoration. However, relatively little research has investigated how the perception of these characteristics, directly and indirectly, affects restoration experience, particularly in a sample of university students within the area of green outdoor campus landscapes.Methods: This study hypothesizes these associations through application of partial least squares structural equation modeling (PLS-SEM), inputting data from a sample of university students in Malaysia. In the hypothesized model, we examine the degree of restoration that is enjoyed by subjects within landscapes through the effects of these characteristics. Indirect effects of perceived restorativeness via evaluation of mediation effects associated with perception of landscape characteristics and restoration experience are also investigated.Results: Through validation of the measurement model, we find significant positive coefficient paths with adequate predictive abilities in the hypothesized model. Findings suggest the effect of PSD on perceived restorativeness leads to a better explanation of restoration experience. In addition, perceived landscape characteristics of PSD enhance restoration experience in alignment with perceived restorativeness characteristics.Conclusions: Greater effects on restoration experience come through perceived restorativeness that is affected by PSD, which itself is capable of promoting favorable experiences of restorativeness in a green space and facilitating psychological restorative outcomes. The mechanistic effect of emotional regulation implies a distinct role of green spaces in maintaining good mental health and has relevance to public health models that promote independence and well-being through preventative approaches. The work paves the way for further studies that examine which dimensions of PSD support perceived restorativeness and restoration experience more than others, and the wider psycho-social value of green spaces through the application of mediation effects and personal sensory dimensions in the development of mental health.