bluuebunny/crossref_metadata_2025_split huggingface dataset:
Kinetic Resistance: Concept for Elecrochemical and Catalytic Kinetics
Authors: Yablonsky Gregory S 
Published: February 2020

It is shown that the steady-state or pseudo-state of rate of complex chemical reaction with a single route can be presented in a form
Rate = (Driving force)/ "Kinetic Resistance" (1)
The driving force is related to the 'mass law expression' for the overall reaction.
The Kinetic Resistance (KR) has a Langmuirian form. It is linear regarding the concentration terms. Coefficients of these terms are Arrhenius parameters or sums of the Arrhenius parameters.
Obviosly, this dependence is similar to the Ohms Law, i.e. rate, driving force and 'kinetic resistance', can be identified with current, voltage and resistance, respectively.
This equation is rigorously proven using graph theory for many classes of linear complex mechanisms which steps are linear regarding intermediates.
As for the non-linear mechanisms, it is rigorously proven for the single route mechanims under typical simplifying assumptions: (a) presence of the rate-determining step;
(b) vicinity of the equlibrium.
In the general case, the rate of complex reaction can not be expressed explicitly as a function of concentration and temperature. It was proven that for the single-route complex reaction with the non-linear mechanism, the kinetic expression is a polynomial F( R, c, T), i.e. a Kinetic Polynomial (KP) , which is implicit regarding the reaction rate. However the thermodynamic branch of kinetic polynomial can be always presented in the form (1) using concepts of the 'driving force' and 'Kinetic resistance'. These resultants have been obtained using the algebraic theory of resultants (1) The concept of kinetic resistance was succefully applied for description of water-gas shift reaction over platinumcontaining catalyst (2)
1. Lazman, M.Z. and Yablonsky, G.S. (2008), in Mathematics in Chemical Engineering and Kinetics, Advances in Chemical Engineering, V.34, Elsevier, Amsterdam, pp.47-102
2. Marin, G, and Yablonsky, G.S., Kinetics of Chemical Reactiions: Decoding Complexity, Wiley-VCH, 2011, 428 pp.
Processing of 2D Layered Materials for Supercapacitors Applications
Authors: Nicolosi Valeria , Mendoza Beatriz , Cohelo Joao , O'Brien Sean , Pettersson Henrik , McGuire Eva , Nerl Hannah , Doherthy Evie , Long Edmund , Barco Jesus , Coleman Jonathan 
Published: February 2020

Graphene has generated huge interest in recent years due to its unique physics properties [1, 2]. We have shown that high-quality monolayer graphene can be produced at significant yields by non-chemical, solution-phase exfoliation of graphite in certain organic solvents. Until a few years ago the standard procedure used to make graphene was micromechanical cleavage [1], which is a very low yield production method. In order to fully exploit graphene’s outstanding properties, a mass production method was necessary and the development of a method to exfoliate cheap, commercial graphite in organic solvents down to large area single graphene flakes with high yield was one major achievement [3]. Recently this work had been extended to a wide range of two-dimensional inorganic nanomaterials [4, 5]. These are potentially important because they occur in hundreds of different types with a wide range of electronic properties, varying from metallic to semiconducting.
In this work we present a cost-effective spray deposition technology for the fabrication of both semi-industrial scale and laboratory size film supercapacitor electrodes. Based on graphene and other two-dimensional nanomaterials. Cylic voltammetry, and charge discharge studies revealed a combination of a double layer capacitance and pseudocapacitance charge storage mechanisms that, unlike the many graphene-oxide derived electrodes reported to date, was maintained at unusually high scan rates of 20,000 mV/s. The performance of these graphene electrodes contrasts with that of functionalised single walled carbon nanotubes (SWNTs) electrodes similarly fabricated, which show a sharp decrease in capacitance above a voltage scan rate of 200 mV/s and a nearly complete resistive behaviour at 4,000 mV/s. Electrochemical impedance spectroscopy analysis showed a capacitor response of 17.3 ms and cyclability for 5,000 cycles with 100 % capacitance retention at 10,000 mV/s [6]. We have also exploited the concept of hybridization to combine the properties of two 2D materials in a "hybrid" synthesized by a single step liquid-phase exfoliation method. First synthesized metal oxide-graphene hybrids showed an improved charge storage capacity. This work constitutes the proof-of-concept work for future investigation on rational design of functional 2D hybrid nanomaterials.

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Invited: In Situ Characterization of Plasma Assisted Hydrogenation/Fluorination of Graphene and CFx Battery Applications
Authors: Jayasinghe Ruwantha , Sumanasekera Gamini U , Thapa Arjun K , Pradhan Bhabendra 
Published: February 2020

Monolayer graphene synthesized by chemical vapor deposition was subjected to controlled and sequential hydrogenation using RF plasma while monitoring its electrical properties in-situ. Low temperature transport properties, viz., electrical resistance (R), thermopower (S), Hall mobility (m), and magneto-resistance (MR) were measured for each sample and correlated with ex-situ Raman scattering and X-ray photoemission (XPS) characteristics. For weak-hydrogenation, the transport is seen to be governed by electron diffusion and low temperature transport properties show metallic behavior (conductance G remains non-zero as 0). For strong-hydrogenation, the transport is found to be describable by variable range hopping (VRH) and the low T conductance shows insulating behavior (0 as 0). Weak localization (WL) behavior is seen with a negative MR for weakly-hydrogenated graphene and this WL effects are seen to diminish as the hydrogenation progresses. A clear transition to strong localization (SL) is evident with the emergence of pronounced negative MR for strongly-hydrogenated graphene.
Multi-walled carbon nanotubes synthesized using fluidized bed chemical vapor deposition technique were fluorinated sequentially to prepare a series of CFx battery electrodes. Primary battery performance was tested using CFx as a cathode against Li. Fully fluorinated MWNTs showed capacity exceeding 815 mAh/g while partially fluorinated samples showed systematically lowered capacity with decreasing x (in CFx). However, fully fluorinated MWCNTs showed distinctly low rechargeable capacity compared to the subfluorinated samples when used as an anode against Li. Mildly fluorinated MWNTs show high capacity and better stability during charge/discharge cycles. High concentrations of fluorine seem to affect capacity retention due to the increased defect densities and reduced electronic conduction. These defects of nanotubes will provide additional pathways for lithium ions to diffuse within the core of the fluorinated structure and to access the electrochemically active C-F sites. XRD, XPS, and Raman spectroscopy were utilized to characterize the samples. Finally the electrochemical performance of fluorinated MWNTs was compared with that of Natural Chinese Graphite (NCG).
Designing Knitted Architectures for Applications in Electrochemical Capacitors
Authors: Jost Kristy , Dion Genevieve , Gogotsi Yury 
Published: February 2020

In recent years, numerous reports on yarn and fiber capacitors have appeared in the literature. These capacitors have demonstrated excellent electrochemical performance under mechanical stress, making them viable for applications in wearable and flexible electronics [1-3]. However, few of these yarns have been constructed into full size textiles, or tested in lengths longer than a few centimeters.
The goal of this study is to explain how the electrochemical performance is effected when capacitive and conductive yarns are fabricated into different knitted structures. We also identify how researchers can design the capacitance and resistance of a textile capacitor to achieve desired device properties. The capacitance and equivalent series resistance for each geometry is determined from galvanostatic cycling, cyclic voltammetry and impedance spectroscopy. Classic sandwiched, interdigitated (Fig. 1) and modified electrode configurations in fabrics will be discussed. All devices are fabricated on a Shima Seiki industrial knitting machine making these geometries viable solutions for any researcher to scale up their capacitive yarns.
References:
1. K. Jost, G. Dion, Y. Gogotsi, “Textile Energy Storage in Perspective,” Review Article in Issue on Flexible Energy Storage and Conversion, Journal of Materials Chemistry A, Feb. 2014, DOI: 10.1039/C4TA00203B

2. K. Jost, D. Stenger, C.R. Perez, J.K. McDonough, K. Lian, Y. Gogotsi, G. Dion, “Knitted and screen printed carbon fiber textile-supercapacitors for applications in wearable electronics,” Energy and Environmental Science, 6 (2013) 2698-2705

3. K. Jost, C.R. Perez, J.K. McDonough, V. Presser, M. Heon, G. Dion, Y. Gogotsi, “Carbon Coated Textiles for Flexible Energy Storage in Smart Garments.” Energy and Environmental Science. 4 (2011) 5060-5067
Fig. 1. Front and back photographs of stainless steel yarn knitted into a symmetric interdigitated supercapacitor, where each electrode is physically separated by a non-conductive yarn knitted between the fingers.
A Study on the Sensitivity between Oxygen Radical and Negative Color PR in Exposure Process of CMOS Image Sensor
Authors: Hwang Sang Duk , Kim J N , Kim Y J , Choi J K 
Published: February 2020

Color filter process for CMOS image sensor process is divided into micro-lens and color layers steps.
And the structure of Color layers is made by building up photo resist(PR).
Then, Color is distinguished by color pattern of image sensor after light induced transmits through the pattern built.
So negative PR is generally used for the structural characteristic.
Negative PR needs high-dose which results in deactivation effect by oxygen radical.
In this paper, the experiment was performed to reduce oxygen radical by adding tool in lithography machine.
As a result, PR sensitivity was developed by reducing Oxygen radical and the process in order to pattern by reduced dose was acquired.
Shape and Orientation Controlled Vapor-Liquid-Solid growth of Si and Ge Nanowires for Monolithic Device Integration
Authors: Lugstein Alois , Molnar Wolfgang , Zeiner Clemens , Bertagnolli Emmerich 
Published: February 2020

Controlling morphology, electronic properties and growth direction of nanowires is an important aspect regarding their integration into devices on technologically relevant scales.
The purpose of the presentation is to illuminate several aspects regarding the vapour-liquid-solid synthesis of group IV nanowires (Si, Ge), their electrical properties, and the fabrication of devices made thereof. Following an introductory survey of nanowire growth methods, experimental results concerning the epitaxial growth of group IV nanowires are presented. The diameter dependence of the growth velocity and crystallographic growth direction of nanowires, a parameter that is of great importance especially in view of the technical applicability of epitaxially grown nanowires will be discussed. After these partially theoretical considerations with regard to the nanowire morphology, the electrical and optical properties of nanowires will be shown.
Finally we will demonstrate shape transfer from a catalytic particle to the nanowire which has to be seen as a proof-of-concept. Given the immense variety of potential binary alloy seeds, we suppose that this approach should not be limited solely to the materials discussed here – other precursors or catalysts should extend this method to other materials.
Having electronic applications of nanowires in mind, theintegration of nanowires in field-effect transistors is naturally the first step. The feasibility of the fabrication process and the basic functionality of nanowire based devices such as gate all around FETs or “straintronic” devices will be demonstrated.
Templated Shadowing-Growth for Photonics and Plasmonics
Authors: Suzuki Motofumi 
Published: February 2020

It is well known that electric and magnetic polarizations depend on shape of bodies. Photonic metamaterials which reflect useful properties of shape are obtained by shaping and arraying nanoelements (<< λ) with a narrow spacing (<< λ), where λ is a wavelength of light. On the other hand, photonic monocrystals, polycrystals and amorphous with shape related useful properties are available by arraying the shaped nanoelements in a scale comparable to λ. Hybridization of photonics and plasmonics is also possible if the metallic nanoelements are integrated.
In order to control the shapes of such nanoelements, shadowing growth based on dynamic oblique deposition is quite useful. The shadowing growth enables growth of complex 3D structures without any pre- and post-processes such as lithography and etching and is robust in choosing materials. In addition it is easy to modulate the composition in a direction perpendicular to substrate surface because the dynamic oblique deposition technique is a version of PVD. By using a template, which is either self-assembled or lithographically patterned, we can tune the shapes and growth position of nanoelements. Therefore, the shadowing growth on a template with tailored nanomorphology is a powerful tool to shape and array those nanoelements.
In this presentation, we will show you the peculiar nanomorphology prepared on various templates and some examples of applications to photonics and plasmonics including photonic crystals, polarizers and sensors.
Water Soluble CdTe Quantum Dots for Mercury Detection
Authors: Elnagar Mohmed , Sakr Abdel-Hamid , Soliman Moataz , Ebrahim Shaker , Abdel-Fattah Tarek M 
Published: February 2020

Nanomaterials are becoming one of the most important classes of material research [1]. For example, quantum dots (QDs), especially water soluble QDs, have been used in many areas of research [2-3]. QDs are nanosize crystals of inorganic semiconductors with diameter in the range of 1-10 nm [4]. At such small sizes (close to or smaller than the dimensions of the exciton Bohr radius within the corresponding bulk material), these nanostructured materials behave differently from bulk solids, because of quantum-confinement effects [4]. As a result of quantum-confinement, they have unique optical and electronic properties such as broad excitation spectra and narrow, symmetric and tunable emission spectra [4]. Therefore, QDs have been used as novel luminescent sensors for chemical and biological species [5-8].
This study fabricated cadmium telluride (CdTe) QDs from aqueous solution containing CdCl2 and Te precursor in presence of thioglycolic acid. The resulted QDs were characterized by using Uv-Vis. spectroscopy, photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM). The results demonstrated that low concentration, in nano-molar range, of Hg(II) ions could effectively quench the CdTe QDs fluorescence because Hg(II) ions form a stable complex with QDs coating (thioglycolic acid) which allow for an effective electron transfer from the QDs to the Hg(II). A linear response to Hg(II) ions in the concentration range from 0.625 to 8.0 n M was observed and the detection limit of this sensor was 0.625 nM and sensitivity was equal to 53.4 /nM.

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Interaction of Silicene and Germanene with Non-Metallic Substrates
Authors: Houssa Michel , Scalise Emilio , van den Broek Bas , Lu Augustin , Pourtois Geoffrey , Afanas'ev Valeri V. , Stesmans Andre 
Published: February 2020

Silicene, the silicon counterpart of graphene, has recently attracted a lot of attention as an alternative 2D materials to graphene for nanoelectronic devices. So far, the likely existence of silicene on Ag(111) surfaces has recently been reported, by combining experimental and first-principles simulations (1,2). The growth of silicene has also been reported on other metallic substrates, like (0001) ZrB2 (3) and (111)Ir (4).
However, the characterization of the electronic and electrical properties of silicene on metallic substrates is very challenging, since these properties can be largely dominated by the substrates. In addition, potential applications of silicene in nanoelectronic devices will also require its growth on non-metallic substrates.
We report here on the theoretical study of the interaction of silicene and germanene (2D Ge counterpart of graphene) with non-metallic substrates, using first-principles simulations. We first studied the weak (van der Waals) interaction between silicene or germanene with metal chalcogenide substrates (5,6). The buckling of the silicene/germanene layer is found to be correlated to the in-plane lattice mismatch between the free-standing silicene or germanene layer and the metal dichalcogenide layer. Highly buckled silicene (e.g. on MoS2) is predicted to be metallic, while low buckled silicene (on e.g. GaSe) is predicted to have Dirac cones at the K-points.
We next investigated the interaction between silicene or germanene with (0001) ZnS or (0001) ZnSe surfaces (7,8). In this case, part of the Si (Ge) atoms form covalent bonds with the substrate, leading to the opening of a gap in their energy band structure. Very interestingly, the value of this energy gap can be controlled by an out-of-plane electric field, leading to field-driven semiconductor to metal transitions at these interfaces – which could be very promising for the potential use of silicene and germanene in field effect transistors.
Part of this work has been financially supported by the European Project “2D Nanolattices” within the Future and Emerging Technologies (FET) program of the European Commission, under FET-grant number 270749, as well as the KU Leuven Research Funds, project GOA/13/011.

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Investigation of Frenkel-Pair Formation in HfO2 and Its Influence on OxRAM Memory Reliability
Authors: Vianello Elisa , Blaise Philippe , Traoré Boubacar , Xue Kanhao , Fonseca Leonardo , Molas Gabriel , de Salvo Barbara , Perniola Luca , Nishi Yoshio 
Published: February 2020

Oxide based RRAM memories are considered as potential candidates to replace floating gate memory devices [1-2] due to their proven low power operation , high switching speed [3] and compatibility with conventional CMOS back-end-of-line process. The working principle relies on the reversible change of the oxide layer’s resistance between two levels namely HRS (High Resistance State) and LRS (Low Resistance State). This resistance change has been widely attributed to the creation/reconstruction and rupture of a localized or multiple conductive filaments (CF) in the oxide layer. Various companies [4] and research laboratories [5] have adopted the HfOx solution as the active oxide layer that casts the memory effect. However, the process of the CF creation responsible for resistive switching and the oxide layer degradation are yet to be fully explored.
In this paper we use first principles calculations to investigate Frenkel-Pair formation (FP) in HfO2 that play an important role in the CF creation. Depending on the electrode nature, its work function and reactivity with oxygen, we bring more insight into the FP formation leading to CF creation and device reliability. We show that oxygen active electrodes with low work function, like Ti, improve device reliability. Finally, endurance tests on a memory cell with Ti as top electrode were performed to assess cycling stability. Endurance up to 108 cycles, with optimized set conditions has been demonstrated.
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