bluuebunny/crossref_metadata_2025_split huggingface dataset:
(Invited) New Benzoxazine Resins Coated on Anodized Aluminium Alloys: Electrochemical Behaviour of Efficient Corrosion Protection Systems
Authors: Olivier Marjorie , Renaud Alexis , Dumas Ludovic , Delangre Adrien , Paint Yoann , Bonnaud Leila , Poorteman Marc , Dubois Philippe 
Published: February 2020

Aluminum alloys are widely used in aircraft applications, especially series 2xxx (Cu) and 7xxx (Ti). Those alloys offer improved mechanical properties compared to pure aluminum, but are strongly sensitive to corrosion. Chromic anodizing combined with chromate containing epoxy primer was used as an efficient system to prevent corrosion. Nevertheless, due to health and environmental issues, this treatment is going to be forbidden. Alternative solutions have to be developed to reach aircraft standards considering health and environmental concerns. This work aims at proposing an alternative protective system, consisting in an oxide layer obtained from sulfotartaric anodizing (TSA) and coated with benzoxazine organic layers. Benzoxazine resins offer high chemical resistance and low shrinkage and so are very good candidates for coating applications. Investigated layers have been prepared on both bare and clad Al-2024 T3 substrates. The morphology and the thickness of coating systems were determined using Field Emission Gun Scanning Electron Microscopy (FEG-SEM). Electrochemical Impedance Spectroscopy (EIS) was used to characterize the electrochemical behaviour of obtained systems and separated layers in order to emphasize synergetic effects. The AC/DC/AC electrochemical tests were carried out to evaluate the cathodic disbonding sensitivity of these new coating systems. The results were fitted by Equivalent electrical circuits to model the electrochemical properties of different layers and the evolution of their properties over immersion time in an aggressive saline solution and during AC/DC/AC cycles.
The results confirmed the strong potential of such systems for future corrosion protection applications.
(Invited) Effect of Position of Reference Electrode on Electrochemical Impedance in Laminated Lithium-Ion Rechargeable Batteries
Authors: Hoshi Yoshinao , Narita Yuki , Shitanda Isao , Itagaki Masayuki 
Published: February 2020

Electrochemical impedance spectroscopy (EIS) is a powerful method to investigate the performance of lithium-ion rechargeable batteries (LIRBs). The three-electrode cell was used for the electrochemial impedance measurement of LIRBs to examine the electrochemical properties of the positive and negative electrodes in LIRBs 1-4). It is important to determine the position of the reference electrode in the LIRBs cell because the measured impedance spectra are affected by the current distribution between positive and negative electrodes. Our group 5) determined the suitable position of the reference electrode for impedance measurements in LIRBs with a three-electrode cell by finite element method (FEM). On the basis of FEM analysis, the effect of the position of the reference electrode on the impedance spectrum was investigated by the measurement of the impedance spectrum of the laminated LIRBs. The condition of reference electrode before and after the impedance mesurement of the laminated LIRBs was discussed with the measured impedance spectrum in the present study.

References:
1. D.P. Abraham, S.D. Poppen, A.N. Jansen, J. Liu, D.W. Dees, Electrochim. Acta, 49 (2004) 4763-4775.
2. J. Zhou, P.H.L. Notten, J. Electrochem. Soc., 151 (2004) A2173-A2179.
3. C.H. Huang, S.X. Zhuang, F.Y. Tu, J. Electrochem. Soc., 160 (2013) A376-A382.
4. O.S. Mendoza-Hernandez, H. Ishikawa, Y. Nishikawa, Y. Maruyama, Y. Sone, M. Umeda, Electrochim. Acta, 131 (2014) 168-173
5. Y. Hoshi, Y. Narita, K. Honda, T. Ohtaki, I. Shitanda, M. Itagaki, J. Power Sources, 288 (2015) 168-175.
(Invited) Analysis of Li-Ion Battery By EIS Response By Equivalent Circuit and Verification of Estimated Parameters
Authors: Momma Toshiyuki , Mukoyama Daikichi , Nara Hiroki , Yokoshima Tokihiko , Osaka Tetsuya 
Published: February 2020

Analyzing technique of Li-ion batteries (LIB) is strongly demanded both in the field of developments of LIB with improved properties such as safety, long life, and high capacity with high power, and in the field of checking the condition of the installed LIB in the power unit. Electrochemical impedance spectroscopy (EIS) is one of the most effective methods of investigation of LIB without disassembling of the cell. We have proposed an equivalent circuit for analysis of electrochemical reactions, diffusion parameters, and resistivity of solid electrolyte interphase (SEI), and demonstrated analysis of impedance spectra with using the proposed circuit.[1-3]
Since the impedance responses of the LIB are the results of impedance of each anode and cathode connected in series, it is hard to distinguish them into elemental steps for each electrode. In this paper, our strategy for the analysis of LIB impedance with resolving the response classified by time constant into elemental steps of each electrode is demonstrated.
The impedance of whole LIB cell was analyzed based on the equivalent circuit with the values of time constant of impedance response for elemental steps of each electrode. The impedance response of elemental step for each electrode was confirmed with two symmetric cells which have a set of two LIB anodes or two LIB cathodes. In order to confirm the correspondence between the each elemental step and the estimated parameters, impedance analyses of symmetric cells to obtain each value of time constant for response of each elemental step.
Furthermore, parameter analysis with shifting profile of time constant of impedance responses by sequence change in temperature of the LIB also helps to verify the reliability of the estimated values. Figure 1 shows the estimated values of each resistance in the equivalent circuit with the analysis of ac response of LIB under various temperatures. The values are aligned straightly against the LIB temperature, while the values obtained at 20 degree C locates out of the lines. These values at 20 degree C could be considered to be difficult to estimate adequately since the time constant of the response were over-lapping.
At the presentation, detailed explanation of these analyses will be introduced and discussed their potential for reliable analysis of impedance spectra.
This work was partly supported by “Research & Development Initiative for Scientific Innovation of New Generation Batteries” from NEDO, Japan.
[1] T. Osaka, et al., J. Power Sources, 119 (2003) 929-933.
[2] T. Osaka, et al., J. Power Sources, 205 (2012) 483-486.
[3] D. Mukoyama, et al., Chem. Lett., 41 (2012) 444-446.
[4] T. Momma, et al., J. Power Sources, 216 (2012) 304-307.

Figure 1
(Invited) Corrosion Inhibitor (Decanethiol) for Carbon Steels Exposed to Aqueous CO2
Authors: Belarbi Zineb , Farelas Fernando , Singer Marc , Young David , Nesic Srdjan 
Published: February 2020

CO2 corrosion mitigation is a challenge in the oil and gas industry. In order to decrease the severity of CO2 corrosion of carbon steel pipelines and equipment, different mitigation practices are recommended. One such strategy is the application of surface active chemical inhibitors. The objective of this study was to evaluate the inhibition effectiveness of decanethiol in a CO2-saturated aqueous electrolyte (1 wt.% NaCl). The inhibition properties of decanethiol were evaluated by electrochemical measurements (linear polarization resistance (LPR) and electrochemical impedance spectroscopy (EIS)) and the steel surface characterized by scanning electron microscopy (SEM). The obtained data show that decanethiol successfully prevents corrosion of carbon steels in a CO2 environment. An inhibition mechanism was also proposed based on adsorption characteristics and film formation.
Keywords
:
CO2 corrosion, decanethiol, carbon steel, EIS, surface film
Detection Method of Corrosion Site of Reinforcing Steel in Concrete By Two Electrode System
Authors: Koike Taisuke , Tokieda Hiroyuki , Hoshi Yoshinao , Shitanda Isao , Itagaki Masayuki 
Published: February 2020

A reinforced concrete has been used for the building structures and bridge in the world. However, the degradation of reinforced concrete related to the corrosion of the reinforcing steel in concrete is now serious problem. It is important to establish the method to evaluate the durability of reinforced steel in concrete. Dawson et al. [1] applied the electrochemical impedance spectroscopy to investigation of the corrosion resistance of reinforced steel in concrete. Koleva et al. [2] investigated the durability of the steel rebar casted mortal cylinder by the rest potential, polarization curve and electrochemical impedance measurements.
The present study developed the method to determine the corroded reinforcing steel in concreate by two electrode system. Figure 1 shows the schematic of developed system in the present study. Two copper electrodes are placed on the surface of the concrete in which the steel bar was embedded. The cover thickness of concrete was 10 mm. The half side of the steel bar corroded to simulate the degradation of the steel bar.
Schematic of the impedance spectrum of reinforcing steel in concrete measured by two electrode system is shown in Fig. 2. Two loops were observed in the impedance spectrum when the copper electrodes are placed on the concrete in which corroded steel was embedded. It indicated that the current flowing though the copper electrodes was flowed into the corroded region of the steel bar. The loop in the high frequency range was related to concrete and the loop in the low frequency range was related to interface of concrete between steel rebar.
Reference:
[1] J. L. Dawson, L. M. Callow, K. Hladky and J. A. Richardson, Corrossion/78, 125 (1978).
[2] D. A. Koleva, K. van Breugel, J. H. W. de Wit, E. van Westing, N. Boshkov and A. L. A. Fraaij, J. Electrochem. Soc., 154, E45 (2007).

Figure 1
(Invited) Using Industry to Inspire Academic Research
Authors: Takeuchi Esther S , Marschilok Amy C , Takeuchi Kenneth J 
Published: February 2020

Market driven applications may benefit from improved or next generation products. However, the scope of the product modification for the new application may be substantial, require significant investment and be high risk. Thus, the new product introduction may be beyond the risk tolerance of a company even though the application and product are aligned with company objectives. This scenario provides an opportunity for academically based research. Academic research can pursue higher risk alternatives in parallel with the investigation of the basic science phenomena associated with the new concept.
Several case studies will be described. For example, one case focuses on the investigation of a new class of active cathode materials for an implantable medical battery. A known life limiting phenomena, cathode solubility, was explored at a fundamental level for the benchmark commercialized system and compared with the new class of materials under development. It was demonstrated that the life limiting mechanism of the battery could be significantly reduced. The second case study describes improvement in pulse power for a lithium/carbon monofluoride (CFx) battery. While the Li/CFx system provides high energy density, it has been limited by its power capability. Electrode design approaches were utilized to address the limitation to broader market adoption.
(Invited) Vionx Energy: A Small Company Leveraging Large-Company Innovations
Authors: Perry Mike L. , Darling Robert M. 
Published: February 2020

Vionx Energy is a start-up company that was created to launch and commercialize redox-flow-battery (RFB) systems for grid-scale energy-storage applications. Vionx has an exclusive license to innovative RFB technology that was originally developed and demonstrated by United Technologies Research Center (UTRC). The Vionx business model is different than most start-up companies and this innovative business model will be the primary focus of this presentation. Vionx Energy has brought together a number of partners with deep expertise in technology, energy, manufacturing, and financing to produce, market, and deploy groundbreaking energy-storage technology in an efficient and effective manner. The unique relationship brings together six global companies— United Technologies Corp. (UTC), Starwood Energy Group, Siemens, 3M, VantagePoint Capital Partners and Jabil. Some of the key advantages of this unique business model will be highlighted, with an emphasis on UTRC’s ongoing role as a source of electrochemical innovations that can enable Vionx to offer future products with increasingly improved performance and cost.
Acknowledgements
Thanks to the organizers of this Symposia for the invitation to present. The authors would also like to thank their collaborators at Vionx Energy and UTRC. Past funding from U.S. Department of Energy, Advanced Research Projects Agency - Energy (ARPA-E) under Award Number DEAR0000149 helped to accelerate UTRC’s initial work on flow batteries, and is also gratefully acknowledged.
Center Approach to Accelerate Technology Commercialization
Authors: Botte Gerardine G 
Published: February 2020

Introduction

The Center for Electrochemical Engineering Research at Ohio University (CEER) is dedicated to electrochemical research and development, innovation, education, and economic growth [1]. The Center focuses on providing out of the box solutions to the problems encountered by chemical and electrochemical industries. The mission of the Center is to: (1) Develop solutions to global problems (sustainable food, energy, water, air) through an electrochemical approach; (2) Educate future generations of experts in electrochemistry and electrochemical technologies; (3) Be a resource to industry and government on policy issues where electrochemical technologies can provide solutions; (4) Disseminate scientific knowledge on electrochemistry and electrochemical technologies; and (5) Contribute to economic growth.
CEER has implemented a novel approach to accelerate technology commercialization from the University. The approach involves technology marketing and commercialization in parallel with its development through a combination of state programs and Industry/University partnerships. Through this approach, challenges in market acceptance get identified early during the technology development roadmap.
In this talk, the approach will be discussed under the context of the development of the electrolysis of coal for the production of high value products.

References [1] Ohio University Center for Electrochemical Engineering Research, https://www.ohio.edu/engineering/ceer/index.cfm, (accessed 04/18/2016).
(Invited) Defect Evolution during Silicon Smartcut™
Authors: Rieutord François , Tardif Samuel , Mazen Frédéric , Landru Didier , Kononchuk Oleg 
Published: February 2020

We have studied the development of cracks in gas-implanted silicon, from nano-scale to wafer-scale which is at the heart of the SmartCut™ technology.
We will discuss the results of X-ray scattering experiments that allow the monitoring of growth of nanometer-size cavities (platelets) from implantation to their full development where they reach sizes of several tens of nanometers. The nucleation, growth and coarsening mechanisms of these nanometer size platelets are interpreted within the Ostwald ripening framework.
At larger annealing times, some micron-size defects called microcracks appear, and experience again some competitive growth, dominated by coalescence. The growth of these micron-size objects depends on their interactions with smaller-size platelets. The modelling of this interaction can explain the dependance of split time with temperature. Microcrack development is a key step in the SmartCut™ process.
Finally the propagation of the fracture front will be discussed. We will discuss the velocity dependence of the crack front with temperature and present some new measurements of dynamic crack opening displacement.

Figure 1
High Electron and Hole Mobility by Localized Tensile & Compressive Strain Formation Using Ion Implantation and Advanced Annealing of Group IV Materials (Si+C, Si+Ge & Ge+Sn)
Authors: Borland John O 
Published: February 2020

Since the 90nm node the industry has been using S/D-stressor for strain-channel formation and increased hole & electron mobility. The S/D-stressor strain-Si method required optimizing the deep S/D junction with the shallow SDE implant junction. PMOS used recess etch eSiGe for p+ S/D tensile strain with precise lateral gate overlap distance control to induce channel compressive strain for increased hole mobility in Si while NMOS n+ S/D compressive strain is formed by deep amorphous implant with carbon and stacking fault dislocation defects that induces channel tensile strain for increased electron mobility in Si. With the switch in transistor design from 2-D planar to 3-D FinFET by the industry at the 22nm and 14/16nm nodes, increasing eSiGe Ge content above 55% has reached it’s limit in strain-Si S/D-stressor of -3GPa for hole mobility improvement therefore requiring higher mobility channel material at 10nm and beyond by using: 1) relaxed >70% SiGe to 100% Ge or 2) compressive strain >50% SiGe to 100% Ge for higher hole mobility. Higher electron mobility requires: 1) relaxed >95% SiGe to 100% Ge, 2) tensile strain-Si on >25% relaxed-SiGe or 3) tensile strain >50% SiGe to 100% Ge. Using CVD epitaxial growth of SiGe and Ge requires thick SRB (strain relaxed buffer) epilayers by blanket or selective epitaxial growth but this results in threading dislocation in the 106 to 109 /cm2 level results in high n+ and p+ junction leakage. The reported targets for NMOS is 2% tensile channel strain of >1.5GPa while for PMOS, 2% compressive channel strain of >-1.5GPa at 7nm node [1].
This paper will review strain-Si and strain-Ge formation by ion implantation and advanced annealing to form tensile and compressive strain channel for improved electron and hole mobility in Group IV materials. Carbon and Si implants was used to form surface tensile strained-channel SiC, GeC and GeSi material while Ge and Sn implants was used to form surface compressive strained-channel SiGe, SiGeSn and GeSn material. Improved hole mobility (µh) by >4x and electron mobility (ue) by >2x have been reported by use of implantstrain formation [2,3].
References
1] R. Kim et al., IEDM-2015, paper 34.1.
2] J. Borland et al., IWJT-2013, paper S4-4, p.49.
3] J. Borland et al., IWJT-2015, paper S2-1, p.12.
(Invited) Significant Reduction of Leakage Currents in Reverse-Biased Ge n+/p Junctions by Taking Care of Peripheral Passivation Layer
Authors: Liu Chi , Ikegaya Hiroki , Nishimura Tomonori , Toriumi Akira 
Published: February 2020

Drastic enhancement of electron mobility and deep understanding of carrier transport in Ge MOSFETs have been made thanks to a significant reduction of major extrinsic carrier scattering sources such as Dit
[1] and surface roughness [2]. Furthermore, EOT scaling in Ge gate stacks [3] in addition to the gate stack reliability [4] have also been demonstrated. One of the remaining big challenges in Ge MOSFETs is rather high leakage currents at n+/p junctions. We recently found that oxygen atoms in Ge substrate have an appreciable effect on reverse-biased n+/p junction leakage current. This result is good news for Ge technology [5].
In this presentation, we discuss the leakage current mechanism in Ge n+/p junctions. We prepared n+/p junctions with various areas, and investigated the dependence of the leakage currents both on area and perimeter length, by changing the peripheral passivation layer. We found a dramatic effect of the passivation layer on the reverse-biased junction leakage current. By taking care of the passivation layer, we demonstrate more than 106 magnitude difference in the on/off ratio at n+/p junctions biased at V=|1| V , which is, to our knowledge, the highest ratio in the conventional planar n+/p junctions.
It is true that the junction leakage is intrinsically poor in Ge due to a narrower energy band gap, but this paper strongly suggests that the poor quality of Ge n+/p junctions fabricated in the current technology is not intrinsic but quite process and materials dependent.
Thus, it is expected that Ge CMOS technology including junction leakage current will be further improved by detailed understanding of Ge properties.
[1] C. H. Lee et al., IEEE TED-58(2011) 1295.
[2] T. Nishimura et al., Appl. Phys. Exp. 5(2012) 121301.
[3] C. Lu et al., Dig. VLSI Tech. Symp. (2015) 2.4.
[4] C. Lu et al., Tech. Dig. IEDM (2015). 14.6.
[5] A. Toriumi et al., ECS-T, 69(5) 287 (2015).
Electrical Characterization of Defects Introduced By Electron Beam Deposition in n-GaAs
Authors: Tunhuma Shandirai , Diale Mmantsae , Legodi Matshisa , Auret Danie 
Published: February 2020

Metallization is an important processing step in the microelectronic and photovoltaic industry. Electron beam deposition is a popular method for depositing metals because of its ability to deposit metals at a more controllable rate. The disadvantage of electron beam deposition is that this technique introduces defects in n-GaAs. Recent research has pointed out to discrete breathers as the possible mechanism of defect formation during metallization. In this work, the fundamentals of energy transfer in GaAs, from electrons with sub-threshold energies were investigated. We have used deep level transient spectroscopy (DLTS) to characterize the defects introduced in n-GaAs during electron beam deposition (EBED) of tungsten Schottky barrier diodes. EBD induces the E0.43 and E0.49 defects. An analysis of the conditions under which the defects are formed was done to distill a number of possible defect formation mechanisms using the experimental evidence obtained.