bluuebunny/crossref_metadata_2025_split huggingface dataset:
The Triebenberg Laboratory-Designed for Highest Resolution Electron Microscopy and Holography
Authors: Lichte Hannes , Schulze Dietrich , Lehmann Michael , Just Holger , Erabi Taher , Fuerst Peter , Goebel Jaqueline , Hasenpusch Andreas , Dietz Peter 
Published: July 2020

Abstract
Very often, the performance of modern electron microscopes is limited by the poor quality of the laboratory rather than by the specifications of the microscope. Therefore, with microscopes aiming at subangstrom resolution microscopy and highest performing holography methods, special measures have to be taken to reach the needed low level of AC-stray fields, vibrations, and acoustic noise. in an ”organically“ grown institute, this is very difficult to realize, if possible at all.
• The Triebenberg Lab is newly built well outside the city of Dresden, in an area essentially free from disturbances, i.e. free from power lines, away from roads, trains and airplanes; fortunately, the site is shielded from wind by means of a dense belt of trees. The lab houses six microscope units each consisting of a microscope room, a room for peripheral devices (power supply, cooling units, computers, etc), and an office for up to three scientists. in view of the nearly ideal environment, the main challenge is to avoid any self-made disturbances which might arise by the operation of the lab. Therefore, without any compromise using the best art of engineering, we designed a special lab virtually free from disturbances. in the following, the main guidelines for the construction are sketched.
Aberration-Corrected STEM: the Present and the Future
Authors: Krivanek OL , Dellby N , Nellist PD , Batson PE , Lupini AR 
Published: July 2020

Abstract
Surprising as it may seem, aberration correction for the scanning transmission electron microscope (STEM) is now a practical proposition. The first-ever commercial spherical aberration corrector for a STEM was delivered by Nion to IBM Research Center in June 2000, and other deliveries have taken place since or are imminent. At the same time, the development of corrector hardware and software is still proceeding at full speed, and our understanding of what are the most important factors for the successful operation of a corrector is deepening continuously.
Fig. 1 shows two high-angle dark field (HADF) images of [110] Si obtained with the IBM VG HB501 STEM operating at 120 kV, about 2 weeks after we fitted a quadrupole-octupole corrector into it. Fig. 1(a) shows the best HADF image that could be obtained with the corrector's quadrupoles on but its octupoles off. Sample structures were captured down to about 2.5 Å detail, easily possible in a STEM with a high resolution objective lens with a spherical aberration coefficient (Cs) of 1.3 mm. Fig. 1(b) shows a HADF image obtained after the Cs-correcting octupoles were turned on and the corrector tuned up. The resolution has now improved to 1.36 Å. This is sufficient to resolve the correct separation of the closely-spaced Si columns.
Sub-Ångstrom Transmission Electron Microscopy at 300keV
Authors: O’Keefe MA , Nelson EC , Turner JH , Thust A 
Published: July 2020

Abstract
Sub-Ångstrom TEM to a resolution of 0.78Å has been demonstrated by the one-Ångstrom microscope (OÅM) project at the National Center for Electron Microscopy. The OÅM combines a modified CM300FEG-UT with computer software able to generate sub-Angstrom images from experimental image series.
Sub-Ångstrom HREM is gaining in importance as researchers design and build artificially-structured nanomaterials such as semiconductor devices, ceramic coatings, and nanomachines. Commonly, such nanostructures include atoms with bond lengths shorter in projection than the point resolution of a mid-voltage HREM. in addition, image simulations have shown that structure determinations of defects such as dislocation cores require sub-Angstrom resolution, as will hold true for grain boundaries and other interfaces.
Sub-Ångstrom microscopy with a transmission electron microscope requires meticulous attention to detail. As resolution is improved, resolution-limiting parameters need to be reduced. in particular, aberrations must be minimized, power supplies must be stabilized, and the microscope environment optimized to reduce acoustic and electromagnetic noise in addition to vibration.
Correction of Aberrations of a Transmission Electron Microscope
Authors: Haider M 
Published: July 2020

Abstract
One of the most striking problems in electron optics, the correction of resolution limiting aberrations by means of a corrector incorporated into the electron microscope column, has been solved during the last six years by demonstrating the improvement of resolution beyond the theoretical limit of the uncorrected Electron Microscope (EM). At first, in 1995 [1] with the correction of spherical and chromatic aberration of a dedicated Low Voltage Scanning Electron Microscope (LVSEM) and later, in 1997, with the correction of only spherical aberration of a commercially available 200 kV TEM [2]. The correction of spherical aberration of a dedicated Scanning Transmission Electron Microscope (STEM) at 100 keV primary energy has been demonstrated [3] and further improvements can be anticipated within the near future.
These achievements could only be obtained due to the emergence of new computer technology and especially CCD-cameras in the case of TEM correctors. These two developments made it possible first to calculate the electron optical components more precisely and hence, to achieve a better understanding of the requirements on the hardware and second, to have a better computer control of the electron microscope and the corrector itself. The combination of these two new technologies made it possible to go towards an automatisation of the alignment. This simplification of the alignment of an even more complex system is achieved by means of a proper combination of image acquisition and dedicated software in order to analyze and measure the aberrations of an electron optical system on one side and on the other to have appropriate tools to compensate these aberrations by computer controlled power supplies [4,5].
A New High Performance Electron Energy Loss Spectrometer for use with Monochromated Microscopes
Authors: Brink HA , Barfels M , Edwards B , Burgner P 
Published: July 2020

Abstract
A new type of electron energy loss spectrometer for use with monochromated microscopes is presented. The energy resolution of the spectrometer is better than 0.100 eV. A completely new electron optical design with a number of extra optical elements and advanced tuning software makes it possible to correct spectrum aberrations to 4th order, which increases sensitivity and collection angles. New high-stability electronics make it possible to maintain energy resolution over a period of several minutes in a practical laboratory environment.
The energy resolution of Transmission Electron Microscopes (TEMs) equipped with electron energy loss spectrometers is determined by a combination of the energy spread of the electron source, the stability of the microscope’s high voltage power supply, and the energy resolution of the spectrometer. Commercial microscopes usually employ electron sources with an energy distributions of around 0.5 eV or more (FWHM), limiting the energy ultimate energy resolution that can be achieved. Recently FEI constructed a special 200 kV TEM with a built-in monochromator which makes it possible to monochromize the electron source to better than 0.100 eV. A prototype of the presented spectrometer has been installed on this microscope.
Reconstruction of the Projected Potential from a through Voltage Series of Dynamical Electron Diffraction Patterns Including Absorption
Authors: Koch C , Spence JCH 
Published: July 2020

Abstract
Recently several different methods have been proposed to reconstruct the projected crystal potential from electron diffraction patterns. These methods envolve either diffraction patterns at many different orientations (as many orientations as beams in the pattern) and/or images, which makes their experimental realization difficult. We propose an entirely new method for reconstructing the projected crystal potential from fully dynamical [including absorption and multiple scattering effects to all orders] diffraction patterns from only a single crystal orientation and no image at all. Knowledge of the specimen thickness is not necessary. However, it requires diffraction patterns at many different accelarating voltages, which is a parameter that can easily be varied (within a certain range) in most modern electron microscopes. Since the intensities in the electron diffraction pattern are not affected by lens abberations this method is capable of reconstructing the projected potential with a resolution far better than that of any method using HRTEM images.
Ultrahigh-Vacuum Electron Microscopy for Gold Nanostructures
Authors: Kondo Yukihito , Okamoto Kimiharu , Naruse Mikio , Honda Toshikazu , Kersker Mike 
Published: July 2020

Abstract
Ultrahigh-vacuum transmission electron microscopy (UHVTEM) has become increasingly popular for the direct observation of nanostructures having clean surfaces, since industrial requirements to make and research nano-scale materials have been rapidly growing for quantum or nanoscale electronic devices. Since we have first developed high resolution UHVTEM in 1986, the UHVTEMs have been evolved with steady advances such as UHV compatible goniometer, field emission gun or etc. Furthermore, the UHVTEM started to combine analytical capabilities such as energy dispersive X-ray spectrometer, in-column type energy filter and etc., and to combine STM (scanning tunneling microscope). The UHV technology is essential for the analysis, because the portion of contaminant in a nano-scale specimen increases as the size of the specimen goes down. This paper reports the results of gold nanostructures by recently the developed UHVTEM.
Figure 1 shows recently developed UHVTEM with Schottky type field emission gun.
Design and Performance of the Sesame I
Authors: Krahl D , Kujawa S , Rilk A , Benner G , Hahn P , Lang G , Essers E , Probst W 
Published: July 2020

Abstract
The strong technological trend towards higher and higher integrated systems is resulting in considerably increasing demands on nanotechnique and -electronics. One of the most important sets of information is the characterization of the inner interfaces within such materials not only concerning the atomic structure but also concerning chemical composition and bonding and concerning local strain. New generation energy filtering TEMs using corrected in-column spectrometers and providing considerably increased power of resolution concerning imaging and analysis are thus essential in order to be able to understand, define, built and characterize such devices.
Within the SESAMe (Sub-eV-sub-Angstrom Microscope) [1] project, LEO and CEOS realize such a microscope for the MPI of Metal Research, Stuttgart in 3 steps. For step 1 and 2 an in second order completely corrected and in third order minimized 90° OMEGA energy filter has been developed. This filter is operating since one year in a 200 kV LEO EFTEM with LaB6 emitter (Step 1) [4]. Results will be presented by W. Sigle during this meeting. This filter will also be incorporated in the Sub-Angstrom-TEM (SATEM) with Cs corrector for the Research Center Jülich.
Chemically Assisted Focused ION Beam Micromachining: Overview, Recent Developments and Current Needs
Authors: Russell PE , Stark TJ , Griffis DP , Gonzales JC 
Published: July 2020

Abstract
Recent developments in FIB have included optics and automation improvements as well as technique development. in the past decade, ion beam optics have improved rapidly to the point where the beam size and profile does not dramatically limit its use in many applications ranging from failure analysis to manufacturing. Developments in FIB can therefore focus on techniques to increase removal rates, enhance selectivity and improve surface finish. in this work we present various efforts to improve FIB micromachining using chemical enhancement, where the incident ions initiate chemical reactions with surface adsorbates; and using geometrical optimization of milling patterns. Chemical enhanced FIB micromachining (CE-FIBM) techniques include the use of water vapor to improve FIB micromachining of various materials including polymers, integrated circuits and diamond as well as the use of various halogen based (F, Cl and I) precursors for machining of materials ranging from Si to Fe-Ni alloys. The machining of a free edge provides a geometrical yield enhancement of more than 5 and, when combined with simultaneous chemical enhancement, can increase total yield by as much as 30 times. The major applications of FIB for preparing cross sectional analysis samples for FIB or SEM imaging, or for TEM analysis benefit in may ways from the specialized gas chemistry assistance methods developed over the past 10 years. Integrated circuit and MEMS device editing techniques have also been enhanced through the use of unique materials specific gas assisted FIB solutions.
3D Determination of Grain Shape in FeAl by Focused Ion Beam (FIB) Tomography
Authors: Inkson BJ , Mobus G 
Published: July 2020

Abstract
Techniques for the 3D analysis of materials at the sub-micron level are of major importance for understanding the structure and performance of new nanoengineered materials. Established techniques for determining 3D shapes of individual grains include X-ray tomography and light microscopy for grains ≫ 1μm, and 3D-atom probe for conducting grains &lt; 50nm size. A new technique of TEM EELS tomography is being developed for particles 2-300nm in a chemically distinct matrix.
For the grain size range 200nm-20μm, we have applied a new technique of 3D analysis using focused ion beam (FIB) sectioning to the site-specific analysis of the shape of individual grains in a single phase matrix. in the 3D FIB technique, a sample surface may be serially sectioned using a highly focused beam of Ga+ ions (Fig. 1). A sequential set of 2D secondary electron images through the sample can be aligned in 3D by cross-correlation of the position of reference markers in the 2D images.
A Method for Thinning FIB Prepared TEM Specimens after Lift-Out
Authors: Rossie B B , Shofner T L , Brown S R , Anderson S D , Jamison M M , Stevie F A 
Published: July 2020

Abstract
Advantages of the FIB lift-out technique over traditional H-bar TEM specimen preparation have been recognized. The ability to rapidly (&lt; 1 hour) prepare a site specific TEM specimen without destroying the entire bulk specimen has led to a wide spread reliance on this method. The main disadvantage of this technique is an inability to accomplish additional membrane thinning if required. Traditional H-bar preparation allows additional thinning. However, mechanical polishing is time consuming and the bulk sample is destroyed. A method has been developed which combines the efficient, site specific advantages of the lift-out method with the H-bar's ability to accomplish additional thinning. in this procedure a lift-out specimen is removed from the bulk sample and mounted onto a half-grid in a configuration similar to that employed by the H-bar technique.
A 1.0-micron thick lift-out specimen was prepared using a FEI Strata DB-235 FIB dual-beam workstation by sputtering away bulk material leaving a thin membrane containing a desired feature (FIG 1).
Application of the FIB Lift-Out Technique for the TEM of Cold Worked Fracture Surfaces
Authors: Giannuzzi Lucille A , White Henry J , Chen Wayne C 
Published: July 2020

Abstract
The FIB lift-out (LO) technique has been applied to a sample that been pulled to failure by tensile testing. An aluminum alloy (5083) was cold deformed using DSI's Maxistrain technology [1]. The alloy was cut with a low speed diamond coated wafering blade such that the fracture surface would fit inside the focused ion beam (FIB) specimen chamber. The sample was then mounted and placed in an FEI 200TEM FIB instrument. An FIB image of the tip of the fracture surface is shown in figure 1. A region for TEM specimen preparation was chosen such that the specimen would be in the plane of the tensile axis. The area of interest was chosen to ensure that FIB undercutting of the specimen could be accomplished upon tilting inside the FIB, and to ensure that the micromanipulator needle would have access to the FIB prepared specimen. A region of interest was coated with Pt using the FIB. A TEM specimen was then prepared in the usual LO manner [2,3]. The location of the finished LO specimen is circled in figure 1. After FIB milling was completed, the sample was removed from the FIB and placed on a light optical microscope stage. The electron transparent membrane was removed from the deformed sample using a glass rod attached to a micromanipulator. While the successful LO was performed, it should be noted that the micromanipulation was non-trivial due to the rough fracture surface combined with the poor depth of field of the light optical microscope.
Combined Focused Ion Beam, Energy Filtered TEM and STEM Techniques for Semiconductor Device Defects Observation
Authors: Pantel R , Sondergard E , Delille D , Kwakman LFTz 
Published: July 2020

Abstract
In this communication we present a method using Focused Ion Beam (FIB), Energy Filtered TEM (EFTEM) and STEM for semiconductor defects interception and high resolution observation. This method takes benefit of the specific imaging properties of respectively EFTEM and STEM techniques. A demonstration is presented for the observation of dislocations in a silicon integrated circuit.
Silicon defects such as dislocations are one of the major issues in Integrated Circuit fabrication. Due to their low distribution density these silicon defects are not easily observed using TEM cross section. in this paper we present a more appropriate technique using: FIB, EFTEM and STEM for such defects observation. First, in order to improve the probability of defects being present in the specimen, a very thick lamella is prepared using FIB. Then, using an energy filter for eliminating the inelastic electrons needed to allow thick specimen TEM imaging, direct defect localization and observation at medium resolution is carried out. After that, taking advantage of the beam broadening in the STEM, the defect position inside the specimen is more accurately evaluated. For that purpose two STEM observations are carried out from the two opposite specimen surfaces. The comparison of image contrast is used for further FIB specimen thinning. The process can be continued down to a thickness compatible with an acceptable spatial resolution TEM imaging.
A Method for Preparation of Site-Specific Multiple Samples of Semiconductor Material for Transmission Electron Microscopy
Authors: Rai R S , Bagchi S , Duncan L , Prabhu L , Beck J , Conner J 
Published: July 2020

Abstract
In recent years, the availability of focused ion beam (FIB) milling systems has given a much-needed boost for transmission electron microscopy (TEM) as a technique for site-specific analysis. Much progress has been made in the area of site-specific cross-sectional and planar TEM sample preparation techniques. However, a continuing need exists to reduce the sample preparation time, in order to improve TEM cycle time for better support of process development, yield improvement and production in a high-volume industrial environment. Thus, a faster TEM sample preparation technique is always desirable to meet this demand. A new approach to TEM sample preparation is described in this paper.
Following the new approach developed in the present work, one can prepare on a single TEM grid at least two different cross-sectional samples of site-specific device structures or up to four different cross-sectional samples of blanket films. Two different samples, each containing an area of interest near the center, are cleaved or cut to a width of about 1.25 mm; these samples may be from two separate locations of a wafer, or from two different wafers where TEM analyses are required.
TEM of Sub-Micrometer Particles using the FIB Lift-Out Technique
Authors: Lomness Janice K , Kempshall Brian W , Giannuzzi Lucille A , Watson Mark B 
Published: July 2020

Abstract
The ability to acquire TEM specimens from micrometer sized particles using an innovative FIB LO technique has been previously demonstrated [1-3]. This technique allowed for the preparation of a TEM LO specimen from regions which were smaller than the conventional dimensions of the LO specimen (∼5 μm × 20 μm). This paper shows how the LO technique previously developed for the preparation of micrometer sized particles [3] may be extended and utilized for the preparation of submicrometer sized particles for TEM analysis.
In this study, TiO2 particles on the order of 200 nm in width were investigated. A small portion of the TiO2 particles was dusted onto double stick carbon tape adhered to a sample stud and then sputtered coated with Au-Pd to protect the outer surface from FIB imaging. The sample stud containing the TiO2 particles was placed in an FEI 200TEM FIB workstation. Figure 1 is a FIB image of the Ti02 particles of interest. Gaps around these particles were deposited with Pt using the FIB assisted CVD process as shown in Figure 2. in this procedure, the Pt acts as a “weld” to hold the particles together, and to allow for a larger region to be milled (e.g., &gt;10 μm) for subsequent specimen preparation.
Redeposition Effects During the FIB Milling of Silicon
Authors: Rubanov S , Munroe PR 
Published: July 2020

Abstract
The technique for the preparation of specimens for transmission electron microscopy (TEM) using the focused ion beam (FIB) miller typically consists of a series of milling steps performed over both sides of an area of interest until an electron transparent membrane is achieved [1]. This process is often accompanied by the formation of damage layers on the surfaces of the specimen. The origins of any damage layer are still not clear. On one hand the process of amorphisation of the target material by the highly energetic ion beam is well known. Alternatively, other workers have reported that this damage layer can be connected with redeposition of milled material. [2,3]. in this paper we have studied redeposition effects during FIB milling of silicon TEM specimens.
A FEI xP200 FIB system with a Ga+ ion source operating at 30 kV was used in this work. to study redeposition effects a row of trenches on a silicon specimen was milled under different beam currents ranging from 1000 to 6600 pA. The size of such trenches was 15x10 μm wide and 1 μm deep. The specimen was then removed from the FIB and sputter coated with a ∼50-100 nm thick Au film to preserve the trench surfaces from further damage during subsequent milling. The specimen was then placed back in the FIB system and a second set of trenches 5×8 μm wide and 0.6 μm deep was milled on the bottom of first set of trenches (Fig. 1a). The specimens were sputter coated with Au again and were placed back in the FIB system and the trenches were then covered with 1 μ thick Pt strips using the metal deposition facility of the FIB. The presence of these protection layers (Au and Pt) ensures that the final TEM specimen have unmodified original damage layers resulting from the initial milling steps. Cross-sectional TEM specimens of the trench walls were then prepared using normal FIB procedures (Fig. 1b) [2].