(Invited) Stability and Reliability of Carbon Nanotube Thin-Film Circuits
Authors: Hersam Mark C. 
Published: February 2020

The isolation and scale-up of electronically monodisperse carbon nanotubes (CNTs) have heightened expectations for CNT-based thin-film electronic devices [1-4] and circuits [5-10]. Indeed, significant progress has been reported for individual CNT thin-film transistors (TFTs), ultimately leading to the demonstration of highly integrated CMOS circuits [11] including static random access memory (SRAM) [12]. While the latter demonstration was realized through careful development of encapsulation schemes that suppress oxygen diffusion, the underlying n-type dopants (i.e., benzyl viologen) possess intrinsic limitations that ultimately degrade electronic performance and limit circuit architecture design. This talk will address this stability and reliability issue by introducing alternative organorhodium n-type dopants for CNT TFTs. In addition to providing controlled n-type doping as determined by TFT and Hall effect measurements, this doping scheme is compatible with top-gated CNT TFT designs. The implications of this work for very-large-scale integration (VLSI) will be discussed.
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