bluuebunny/crossref_metadata_2025_split huggingface dataset:
Strained BaTiO3 / SrTiO3 Superlattice Grwon by Reactive Molecular Beam Epitaxy
Authors: Tian W , Jiang J C , Haeni J H , Schlom D G , Pan X Q 
Published: July 2020

Abstract
Due to their unique dielectric and ferroelectric properties, ferroelectric superlattices have attracted increasing interest for fundamental and applied research. Such superlattices with a small layer thickness (a few unit cells) provide a model system to investigate the effects of crystal size, internal strain, interfacial structure and chemistry on physical properties. Recent development in oxide thin film epitaxial growth using reactive molecular beam epitaxy (MBE) make it possible to grow high quality metastable oxide superlattice films. BaTiO3 / SrTiO3 system has been selected for this study.
[(BaTiO3)5 / (SrTiO3)5]20 superlattice films were grown on (001) SrTiO3 substrates by reactive MBE. The atomic structure of these films and the related heterostructural interfaces have been investigated by a combination of high-resolution transmission electron microscopy (HRTEM) and computer image simulations. HRTEM studies were conducted within JEOL-4000EX electron microscope equipped with Gatan Image Filter (GIF), which is operated at 400 kV.
Atomic Structure of La067Ca0.33MnO3 Thin Films on LaAlO3
Authors: Gao H-J , Chen CL , Fan X , Kim M , Chen SY , Chu CW , Pennycook SJ 
Published: July 2020

Abstract
Thin films of doped perovskite manganites of the type R1-X AxMnO3-y are currently become the focus of intense theoretical and experimental research due to their promising technological implications. However, the microstructure of the film and the interface structure at the atomic level remains unclear. In this report, we will present the atomic structure of the film/substrate interface and the microstructure of the film using a combination of transmission electron microscopy (TEM), Z-contrast scanning transmission microscopy (STEM), and electron energy loss spectroscopy (EELS).
The La0.67Ca0.33MnO3 (LCMO) samples were grown on (001) LaA1O3 (LAO) using pulsed laser deposition. X-ray diffraction indicated the films to be oriented with the [001] directions parallel to the &lt;001&gt; directions of the pseudo-cubic perovskite LAO. Rocking curve measurements using the (002) reflection from the film indicated a full width half maximum of less than 0.3°. A Philips EM-400 electron microscope at 100 kV and a VG HB603 STEM at 300 kV were employed for sample analysis.
Application of Electron Microprobe Age Mapping and Dating of Monazite
Authors: Williams M L , Jercinovic M J 
Published: July 2020

Abstract
High resolution X-ray mapping and dating of monazite (Th, REE-phosphate) using the electron microprobe is an exceptionally powerful technique for structural, metamorphic, and tectonic analysis in geology. Age determination of geologic materials has been conventionally accomplished by mass spectrometry-based analysis of radioisotopic ratios in minerals from hand-picked mineral separates, careful sampling of individual grains out of petrographic thin sections, or by detailed ion probe analysis. Recently, use of the electron microprobe for dating purposes has been attempted. In principal, the concentrations of Th, U and Pb uniquely define the age if non-radiogenic Pb is either not initially present or can be subtracted from the total Pb. Monazite contains high concentrations of Th and U and does not appear to incorporate significant non-radiogenic Pb during mineral growth. Furthermore, monazite is a ubiquitous accessory phase in many metamorphic and igneous rocks, making it ideal for microprobe dating.
An Evaluation of Dating of Diagenetic Xenotime by Electron Microprobe.
Authors: Griffin Brendan J , Forbes Duncan , McNaughton Neal J 
Published: July 2020

Abstract
Xenotime is an igneous mineral commonly present in pegmatite and fractionated granite. Recent studies reveal that it also forms as a diagenetic mineral. Minute (0.1-5 μm) xenotime overgrowths typically crystallise on the surfaces of detrital zircon shortly after sedimentation, in a wide range of siliciclastic sedimentary units. For example, in backscattered electron (BSE) imaging using a scanning electron microscope (SEM), two minute, euhedral, pyramidal, xenotime overgrowths on an oscillatory-zoned detrital Ambergate zircon are evident (figure 1).
Electron microprobe analysis (EMPA) geochronology is a chemical dating method that uses precisely measured concentrations of U, Th, and Pb, and the decay rates of U238, U235, and Th232, to calculate an age for a mineral. The EMPA dating method used in this study to date igneous xenotime and igneous-metamorphic monazite is the chemical isochron method (CHIME). EMPA geochronology is not a widely used technique because of the higher precision of isotopic geochronology.
Drift-Corrected High Magnification Elemental X-Ray Mappng
Authors: Bailey GW , McKernan S , Price RL , Walck SD , Charest P-M , Gauvin R , Kawasaki M , Hosokawa F , Fritz G , Kale N 
Published: July 2020

Abstract
Chemical analysis in a TEM has usually been done as a manual point analysis by forming a probe of an appropriate size for the area of interest. This type of local analysis may provide enough information from the selected area, but these days when materials properties are found to be deeply dependent on chemical distribution, one needs to do a higher dimensional analysis using a systematic line scan or mapping.
Since the advent of the Field Emission Gun (FEG), chemical mapping using X-rays (EDS mapping) or inelastic scattered electrons (Energy Filtering mapping) has become more and more commonly used due to the extremely high resolution information available in the chemical map. Compared to the energy filtered mapping, EDS maps take longer to acquire due to the use of the scanned probe over the area but EDS mapping allows a wider choice of elements to map due to the wider energy range it covers.
Microstructures in Milli-Wave Sintered Silicon Nitride
Authors: Bailey GW , McKernan S , Price RL , Walck SD , Charest P-M , Gauvin R , Brito M E , Valecillos MC , Hirao K , Toriyama M 
Published: July 2020

Abstract
Expectations arised that unique microstructures could be attained by micro- or milli-wave processing of ceramics. To determine possible effects of milli-wave radiation on the microstructure evolution of silicon nitride, a detailed study has been carried out for silicon nitride sintered under conventional resistance heating and under milli-wave radiation (28 GHz). Densification of silicon nitride is achieved by liquid-phase sintering process. The additives such as yttria (Y2O3) and alumina (A12O3) are utilized to form a liquid phase during sintering. Considering the low microwave absorption factor of silicon nitride, heating in a microwave field is associated with the preferential microwave absorption of the additives. Differences in the nature and/or in the absorption factor of the additive will influence the sintering process and hence the final microstructure.
Backscattered Electron Imaging and Microanalysis of Iron-Titanium Oxide Minerals in Fine-Grained Igneous Rocks
Authors: Lowther J S , Brunstad K A 
Published: July 2020

Abstract
Oxides of iron, titanium, and iron & titanium occur as accessory mineral components of most igneous rocks and generally comprise 1-2% of the total rock volume. In the fine-grained rocks the crystals are usually equidimensional and less than 1 mm across. Because most of them are opaque they cannot be examined using polarized transmitted light in the standard petrographic microscope and must be identified by reflected light (1). We have chosen to study these minerals in the SEM using BSE imaging and EDS microanalysis of carbon-coated polished sections of the rocks which contain them. Alhough this does not permit precise identification of the minerals the technique does reveal textural details which cannot be seen with light microscopy and also allows chemical analysis of the grains or parts of the grains. Furthermore, all these the oxide minerals are very easy to see in the BSE images because they are a higher atomic number (Z) than the silicates that form the bulk of the rock.
Fluctuation Microscopy Studies of Amorphous Diamond-Like Carbon Films
Authors: Chen X , Gibson J M , Sullivan J 
Published: July 2020

Abstract
Hydrogen-free amorphous diamond-like carbon films have stimulated great interest because of their useful properties, such as high hardness, chemical inertness, thermal stability, wide optical gap, and negative electron affinity[l]. Consequently, they may have various potential applications in mechanical and optical coatings, MEMS systems, chemical sensors and electronic devices. Amorphous diamond-like carbon films often contains significant amounts of four-fold or sp3 bonded carbon, in contrast to amorphous carbon films prepared by evaporation or sputtering which consist mostly of three-fold or sp2 bonded carbon. The ratio and the structure configurations of these three-fold and four-fold carbon atoms certainly decide the properties of these amorphous diamond-carbon films. Although the ratio of three-fold and four-fold carbon has been studied with Raman spectroscopy and electron-loss-energy spectroscopy, very little has been understood regarding key questions such as how the three-fold and the four-fold carbon atoms are integrated in the film, and what structures those three-fold carbon atoms take.
Real Time Observations of Dislocation-Mediated Plasticity in the Epitaxial Aluminum (110) / Silicon (001) Thin Film System
Authors: Stach EA , Dahmen U , Nix WD 
Published: July 2020

Abstract
The mechanical behavior of metallic thin films on silicon plays a crucial role in the performance and reliability of microelectronic devices. A substantial body of research has focused on experimental methods for determining the mechanical properties of these systems as well as their response to thermomechanical stimuli. Of particular interest is a fundamental understanding of the how these films respond to the thermal expansion stresses that develop during typical microelectronic device fabrication steps.
In this work, we present a series of real time in-situ transmission electron microscopy observations of the thermomechanical response of a model metal film on silicon system. Physical vapor deposition of approximately 50 nm of aluminum onto a clean Si substrate held at 280 °C results in the creation of an epitaxial bicrystalline film with two variants of Al (110) oriented grains. In order to observe a large, uniform area during in-situ TEM thermal cycling, the Si substrate used was a SIMOX structure composed of 300 nm of Si (001) over 370 nm of buried SiO2).
The Crystallography of Co-Alloy Magnetic Media Grown on NiAl Underlayers: Two-&-a-Quarter-D Isotropy Due to Multiplicity of Hexagonal & Cubic Structures
Authors: MoberlyChan Warren J , Dorsey Paul 
Published: July 2020

Abstract
Hard drives in portable computers require media deposited on glass substrates and employ NiAl as the first seed layer to optimize magnetic performance. From observations of a 112 XRD peak [1], a &lt;112&gt; texture has been reported to develop as sputtered films of NiAl thicken; however, synchrotron analysis observes additional cubic peaks [2]. The electron diffraction in this study detects no dominant &lt;112&gt; orientation in NiAl, but rather that the NiAl films (and subsequent cubic underlayers) are closer to 3-D isotropic. Furthermore, the +/-20° range of ﹛1100﹜ orientations observed [3] in the Co media grains grown on NiAl/Cr occurs not because of one (or two) special zone axis relationship(s), nor due to substrate surface finish, but rather as a consequence of multiplicity relationships between the cubic and hexagonal crystals. Although an “increase” in variants is often accepted for an upper film (e.g. bicrystals of [1120] Co on [200] Cr),
TEM Investigations of Aluminum Assisted Crystallization of Amorphous Silicon (α-Si:H)
Authors: Kishore Ram , Hotz Chris , Brown WD , Naseem HA 
Published: July 2020

Abstract
The Crystallization of amorphous silicon (α-Si:H) at lower temperatures is a challenging area of research these days because it will open up the possibilities of fabricating semiconductor devices like thin film transistors (TFT's), solar cells, active matrix liquid crystal display (AMLCD) devices at considearbly lower cost. Various metals e.g. Ni, Cu, Au, Ag and Al have been used to bring down the crystallization temperature of α-Si. We have found that aluminum assisted crystallization can bring down the temperatures of crystallization to as low as 200 °C. The crystallization behavior of α- Si:H has been studied by scanning electron microscopy, Raman spectroscopy, XPS spectroscopy and X-Ray diffraction but very little work has been carried out on microstructural investigation of the material using transmission electron microscopy. We have prepared specimen for die TEM study of α-Si:H and that of crystallized Si obtained by aluminum assisted crystallization. A detailed investigation of the crystallization behavior of α-Si:H using TEM have been carried out.
Scanning Electron Microscopy Studies of Vacuum Evaporated CdCl2 Doped Cadmium Sulphide Films
Authors: Kishore Ram , Korapati Venkatram , Brown WD , Naseem HA 
Published: July 2020

Abstract
CdTe/CdS thin film solar cells are being investigated extensively these days by many workers as an option for low cost photovoltaic applications. In order to achieve high efficiency solar cell it is important that the CdS film should have minimum possible structural defects and reasonably large grain size. The CdS films for CdTe/ CdS solar cell structure are mostly grown on glass substrates by chemical bath deposition (CBD). Although adherent, transparent and conformal films with index of refraction close to single crystal CdS can be grown by CBD, impurity inclusions and micropinholes are a problem there in. Very little work has been carried out to grow CdS films by thermal evaporation in vacuum. In the present work we have grown pure and CdCl2 doped CdS films on glass substrates by thermal evaporation and carried out microstructural investigations of these films using scanning electron microscopy.
Corning 7059 glass of 25.4 x 25.4 x 1.2 mm size were used as substrates for the deposition of CdS as well as CdCl2 doped CdS films.
Clincial Application of Microwave Processing: Biopsy to Block in 3 Hours
Authors: Hastings Cindy L , Crocker Monica J , Walker Patrick D 
Published: July 2020

Abstract
Microwave processing has progressed into a promising procedure for use in the clinical electron microscopy laboratory. In striving for faster turn-around-time in the clinical patient environment, the laboratory microwave has become a very exciting tool. The development of microwave technology enhances the pathologists’ ability to diagnose quickly without compromising quality.
This laboratory's patient sample base is primarily renal biopsies. Tumors and other tissue abnormalities are also diagnosed. Animal and human renal tissue were used for experimentation with the microwave processing protocol. With the need for consistency between the existing resin of choice and standard processing protocol, procedures were developed with these criteria in mind. The standard electron microscopy processing protocol for this laboratory is fixation in either 10% neutral buffered formalin (NBF) or 4% buffered gluteraldehyde followed by post-fixation with 1% osmium tetroxide for 1 hour. The dehydration is performed with gradients of 50% to 100% ethanol followed by a transition solvent of propylene oxide into resin infiltration and polymerization.
Immunolocalization of Rubisco Activase and Rubisco in C3 and C4 Plant Tissues
Authors: Madhavan S , Miller-Goodman M S , Lee K W 
Published: July 2020

Abstract
Ribulose bisphosphate carboxylase/oxygenase (Rubisco), an abundant enzyme in chloroplasts, must be activated by CO2 in order for it to catalyze the carboxylation of ribulose bisphosphate. Rubisco activase, a nuclear encoded chloroplast protein was first identified as a biochemical lesion in the rca mutant of Arabidopsis (1) which lacked this enzyme. Study of Rubisco in this mutant (2) and transgenic tobacco plants with reduced Rubisco activase levels showed that Rubisco could not achieve and maintain an adequate level of activity, in vivo, without an activase. Rubisco activase promotes ‘activation’ of Rubisco by overcoming the deleterious effects of tight binding sugar phosphates and low chloroplast CO2 levels on catalysis and carbamylation (1).
Rubisco activase has been detected in higher plants (3), in unicellular green algae (4,5) and in cyanobacteria (6). Though the presence of Rubisco in guard cell chlroplasts was a subject of controversy, several immunolight and immunoelectron microscopic studies have demonstrated the presence of Rubisco in guard cells (7).
TEM Comparison of Cytologic Specimens Collected in Cytorich Red Preservative and Routine Methods
Authors: McDonald F , Buschmann BO , Boudreaux CW , King JAC 
Published: July 2020

Abstract
Liquid-based technology is becoming more widely used in cytology laboratories for gynecologic and non-gynecologic specimens. Like many other institutions we recently incorporated the liquid-based technology into our laboratory. We have an electron microscope facility in our department and utilize the TEM for ukrastructural evaluation of cytology specimens when additional information is needed. This study compares the preservation of cells from cytology specimens when prepared by routine methods and when placed in the preservative fluid for liquid-based preparations.
Routine smears were made from fine needle aspirations at the time of the procedure or from urine or body fluids on receipt. Some material from three of the non-gynecologic specimens was placed in CytoRich Red (TriPath Imaging, Burlington, NC) fluid. The specimens in CytoRich Red were then centrifuged, and the pellets were placed in 3% glutaraldehyde in cacodylate buffer. Eight body fluid or fine needle aspiration specimens in Plasma-Lyte (Baxter Healthcare Corp., Deerfield, IL) balanced electrolyte solution were centrifuged, and the pellets were placed in 3% glutaraldehyde in cacodylate buffer.
SEM Analysis of Urine Crystals Prepared with Cytorich Red
Authors: Brumit MC , Buschmann B O , Boudreaux C W , McDonald F , King J A C 
Published: July 2020

Abstract
Microscopic evaluation of urine sediment by the cytology laboratory can provide valuable information to the clinician. While some crystal types are considered normal, others are abnormal and indicate disease. Traditional analysis within the cytology laboratory includes direct cytospin preparations and smears of the urine sample. Light microscopy with polarized light is then utilized to examine the slide preparations.
Many cytology laboratories have recently incorporated liquid-based technology for gynecologic and non-gynecologic specimen preparation. Specimens placed in the proprietary fluid are processed according to the manufacturer's directions with the ultimate result of a thin, circular layer of cells on the slide. The advantages of liquidbased methods include concentration of the cells into a thin layer, localization to a small area of the slide, minimization of background debris, and ability to make additional specimens from the same sample. When the liquid-based slide preparations of urine made in our lab were compared to the conventional cytospin smears,
High Throughput in Advanced Sample Preparation
Authors: Shechter Guy , Riga Giorgio 
Published: July 2020

Abstract
As the semiconductor industry paces toward 0.15-micron feature size and below, the visibility of structures becomes a challenge. As a result, the use of higher precision metrology equipment such as FESEM, STEM, TEM and SCM becomes a necessity. TEM analysis today is a less common methodology of analysis. This is due to the time and effort required for the analysis as well as the difficulty of the sample preparation. This publication will share the experience gained in sample preparation for challenging applications such as STEM, TEM and SCM. The main driver will be the focus on short turnover time and high success rates.
In order to perform high-resolution analysis, samples should be transparent to electrons. Optimal thickness would be in the range of 20 to 120 nm (1). Pre-preparation of sample for advanced imaging will determine the final step method required. We used the automated polishing technique for sample preparation and reached 1 to 2 micron thickness.
Broad Ion Beam “Slope Cutting” Technique for Cross Sectional SEM Specimen Preparation of Semiconductors
Authors: Alani R , Hauffe W , Mitro R J 
Published: July 2020

Abstract
Cross sectional SEM specimens are routinely prepared for process monitoring/development, fabrication problem solving and failure analysis in semiconductor industries. A considerable variety of established methods are already in place for production of these specimens. They include: mechanical polishing, manual/automated cleaving, wet chemical etching and focused ion beam (FIB) milling. This report covers a new approach to the preparation of such specimens utilizing a broad ion beam technique. The technique consists of three steps, I) perpendicular “slope cutting” to expose the profile of the layers/features in the starting wafer, II) etching of the cut surface to delineate the microstructures and III) coating the specimen with a conductive thin film to prevent charging effects in the SEM. All three steps are carried out in a dedicated broad ion beam instrument, designed initially to etch and coat SEM specimens in one vacuum chamber [1]. The entire three-step process can be completed in one hour.
A Technique to Prepare Cross Sections of Semiconductor Devices in Small Samples for Transmission Electron Microscopy
Authors: Hudson M V 
Published: July 2020

Abstract
This technique is used to prepare cross sections of semiconductor devices in small samples for analysis by Transmission Electron Microscopy (TEM). These small samples, measuring 100 X 100 X 50 microns, are too small for the manual handling involved in routine mechanical cross sectioning methods. A larger sample, for easier manual handling, is made by gluing the original small sample between a larger piece of silicon and a larger piece of dimpled quartz. The dimpled depression in the quartz is just large enough to surround the original sample. The sample is then mechanically thinned down using a Tripod polisher and the wedge technique. The quartz piece, glued to the top of the original sample, allows the progress of the polish to be monitored as the first side of the cross section is being mechanically polished. The silicon piece, glued to the bottom of the original sample, is used to gauge the final thickness of the wedge produced when polishing the second side of the cross section using the wedge technique.
FIB Dimpling: A Method for Preparing Plan-View TEM Specimens
Authors: Klepeis Stanley , Domenicucci Anthoney , Hunt Donald , Anderson Ron 
Published: July 2020

Abstract
Failure analysis in the microelectronic industry via TEM has long dealt with the specimen preparation spatial resolution problem—the ability to prepare useful TEM specimens at very small pre-selected locations. This problem is made more difficult with time because, while device structures become smaller and more dense, the failure rate of individual devices is extremely low and dropping. TEM analysts, therefore, must prepare specimens that optimally present a single faulty component within an ocean of a billion or more similar components. Sophisticated electrical testers can find the faulty component and transfer its coordinates to a FIB tool where the failure can be marked. Cross section TEM specimens are appropriate when it is suspected that the failure is caused by a defect in the stack of metal and insulators constructed on the top of the device substrate (usually silicon). Plan view TEM specimens are appropriate when the electrical signature of the failure indicates that the fault lies in the Si itself-dislocations or some other crystal defect.