bluuebunny/crossref_metadata_2025_split huggingface dataset:
Novel Non-Injection Approaches for Revealing and for Microscopic Investigation of the Microcirculatory Bed in Different Organs and Tissues
Authors: Chilingaryan N , Chilingaryan A , Chilingaryan M 
Published: July 2020

Abstract
Certain disadvantages of traditional injection methods and difficulties arising during investigation of experimental and pathological material, limit the possibilities for extensive study of the microcirculatory bed (MCB). This has prompted the authors to develop new non-injection methods for revealing the MCB on histological sections by means of direct staining of the structural elements of the vessel wall. These methods are based on selective precipitation of the extra- or intracellular orthophosphates with ions of Zn, Cd, Co, Ca, Sr, and Pb in the vascular endothelium and smooth muscle cells. These methods (which we have called “histoangiological”) provide clear-cut contrast dyeing of the MCB in different organs and tissues as well as tumors in rat, cat,pig, dog, and in humans.
In these methods, the reaction end product is lead sulfide which provides a high degree of contrast. Vessels and capillaries are detected due to precipitation of the deposit in the vascular endothelium.
Multiple Approaches to Visualizing Fibrin Clot Structure and Assembly
Authors: Weisel John W 
Published: July 2020

Abstract
Fibrin clot formation is necessary for maintaining the integrity of the vasculature via physiological processes of hemostasis and wound healing and is also involved in pathological processes, such as thrombosis and atherosclerosis. A variety of structural and biophysical approaches has been used to examine intermediates in the formation of clots and to visualize in vitro clots and ex vivo thrombi.
Structures at all stages of polymerization have been examined to learn about molecular mechanisms of assembly. Fibrinogen is a polyfunctional, multi-domain protein that is essential for platelet aggregation and for the formation of the three-dimensional network of fibrin fibers which is the structural basis of the clot. Distinctive functions for several of fibrinogen's domains in the fibrin assembly process have been elucidated. Enzymatic removal of the fibrinopeptides exposes binding sites in the central region which then interact with complementary sites at the ends of a neighboring molecule to yield fibrin oligomers.
Freeze Fracture at the Turn of the Century: Techniques for Visualizing and Labeling Tissues, Cells, and Molecules
Authors: Yasumura Thomas , Rash John E 
Published: July 2020

Abstract
Freeze-fracture techniques have contributed much to our understanding of membrane composition and macromolecular architecture. However, further substantive contributions from freeze fracture have seemed unlikely because: a) replicas typically fragmented, destroying histological orientation within samples; b) histochemical staining techniques were thought to be incompatible with bleach- or acid-cleaned freeze-fracture replicas; c) the limit of resolution was presumed to be 3-5 nm; and d) there were no methods for directing the fracture plane to specific components within a tissue. Recent developments in “grid-mapped freeze fracture” and freeze-fracture immunocytochemistry have addressed each of these limitations.
Using grid-mapped freeze fracture, samples are mapped in three dimensions using confocal microscopy before freeze-fracture (Fig. A), as well as after replication and stabilization in Lexan plastic on a gold “Finder” grid (Fig. B). After replica cleaning, areas of interest are correlated in confocal and TEM images —— for example, cilia of the ependymal layer of rat spinal cord (Fig. C).
A Technique for In Vivo Morphological Evaluation of Chronically Implanted Neuronal Silicon Substrate Electrodes for Confocal Microscopy
Authors: Edwards CA , Finger PA , Anderson DJ , Wiler JA , Hetke JF , Altschuler RA 
Published: July 2020

Abstract
Various multichannel silicon electrodes have been developed for stimulating and recording in the central nervous system of experimental animals. These electrodes can be used in their planar form or can be assembled into 3-D structures for volume interaction with tissue. However, bio-compatibility issues arise concerning the introduction of any electrode into living tissue. From earlier observations, we noticed that the neuronal cells had a tendency to adhere to the chronically implanted silicon substrate. Routine microtechnique became an obstacle when attempting to section the implanted and embedded electrode. Most often, this was attempted by passing a stainless steel blade through paraffin, or plastic embedded tissue, resulting in disrupting the tissue material interface. We needed to develop a reproducible procedure which preserved the integrity of this interface for future LM and confocal microscopic studies.
In order to preserve the electrode/tissue interface, we used the Exakt microgrinding/micropolishing technique, where the electrode/brain block was embedded in Technovit 7200 resin and cut with a diamond impregnated band saw.
Principles of Practical Advantages and Limitations of Light Microscopic 3d Deconvolution
Authors: Holmes TJ , O’Connor NJ , Wang M , Wang C , Turner JN 
Published: July 2020

Abstract
There has been much provocative discussion over the past few years about the advantages and limitations of deconvolution methods. In this tutorial we will provide a reasonable understanding of the underlying theoretical principles of deconvolution, with an aim at understanding expected advantages and limitations. These principles will be presented for a mixed audience composed of biologists, neuroscientists, engineers, physicists and other scientists and graduate students. These principles will be presented in the context of both widefield and confocal microscopy deconvolution.
The basic principles of Fourier optics will be presented. From these principles, we can explain why it is that the confocal microscope provides a superior in-plane and axial (z-axis) resolving power, compared to the widefield microscope. In particular, for example, the Fourier transform of a 3D widefield image contains a missing cone region (to be explained in the tutorial), and this missing cone region effectively spoils the axial resolution of unprocessed widefield data.
All Models are Wrong an Overview of 3D Deconvolution Methods
Authors: Conchello José-Angel , Markham Joanne , McNally James G 
Published: July 2020

Abstract
Three dimensional (3D)microscopy is a powerful toll for the visualization of biological specimens and processes. In 3D microscopy, a 3D image is collected by recording a series of two-dimensional (2D) images focusing the microscope at different planes through the specimen. Each 2D optical slice in this through focus series contains the in-focus information plus contributions from out-of-focus structures that obscure the image and reduce its contrast. There are two complementary approaches to reduce or ameliorate the effects of the out-of-focus contributions, optical and computational. In the optical approach a microscope is used that avoids collecting out-of-focus light, such as a confocal microscope (see and references therein), a two-photon or three-photon fluorescence excitation microscope, or atwo-sided microscope. In the computational approach, the through-focus series is processed in a computer using any of a number of debluring algorithms to reduce or ameliorate the out-of-focus contributions. In the past two decades, several methods for debluring microscopic images have been developed whose common aim is to undo the degradations introduced by the process of image formation and recording
All You Need to Know About Electron Backscatter Diffraction: Orientation is Only the Tip of the Iceberg
Authors: Michael J R 
Published: July 2020

Abstract
This tutorial will describe the technique of electron backscattered diffraction (EBSD) in the scanning electron microscope (SEM). To properly exploit EBSD in the SEM it is important to understand how these patterns are formed. This discussion will be followed by a description of the hardware required for the collection of electron backscatter patterns (EBSP). We will then discuss the methods used to extract the appropriate crystallographic information from the patterns for orientation determination and phase identification and how these operations can be automated. Following this, a number of applications of the technique for both orientation studies and phase identification will be discussed.
EBSD in the SEM is a phenomenon that has been known for many years. EBSD in the SEM is a technique that permits the crystallography of sub-micron sized regions to be studied from a bulk specimen. These patterns were first observed over 40 years ago, before the development of the SEM and were recorded using a special chamber and photographic film.
In-Situ Transmission Elecron Microscopy (TEM) Study of the Sintering of Sputtered Copper Nanoparticles on (001) Copper
Authors: Yeadon M , Yang JC , Averback RS , Bullard JW , Olynick DL , Gibson JM 
Published: July 2020

Abstract
The large surface area: volume ratios and fine grain size of nanophase materials give rise to novel and exciting structural and electrical properties that are of considerable scientific and technological interest. Using copper as a model system we have investigated the sintering of sputtered copper nanoparticles (4-20nm diameter) with a copper substrate in a novel UHV in-situ TEM.
The nanoparticles were generated in a UHV chamber built into the side of the column by sputtering in 1.5Torr Ar. They were transported into the microscope in the gas phase and deposited on an electron transparent (001) copper foil mounted on a heated support. A typical bright-field (BF) image of the sample immediately after deposition at room temperature is shown in Fig. 1. The particles have assumed a random orientation on the substrate and remain stable for many hours at room temperature. The presence of both single particles and agglomerates of particles is evident in this image and examples are labelled ‘P’ and ‘A’, respectively
Electrode Potential-Induced Morphology of Au, Pt and Au-Cu Alloy Particles Formed in Solution
Authors: Lu Da-ling , Tanaka Ken-ichi 
Published: July 2020

Abstract
It has been well known that Au single crystal undergoes reconstruction in vacuum as well as in acidic solutions at negative electrode potentials. The reconstruction is lifted when electrode potential sweeps to positive values. Taking into account of these facts we considered when Au particles grow on an electrode in solution at different electrode potentials, morphology of the particles may be different. Based on this idea, we investigated formation of Au, Pt and Au-Cu alloy particles grown in solutions and observed icosahedral and decahedral particles of Au and Pt formed at negative potentials. These particles are identical with multiply twinned particles (MTPs) observed in vacuum.
Particles were electrodeposited on an amorphous carbon film which was evaporated on a collodion film supported by a Au mesh as required for viewing in a transmission electron microscope (TEM). A three-compartment electrochemical cell was employed at room temperature with Pt wire counter electrode
Synthesis and Characterization of Tin Oxide Nanoparticles Heavily Doped with Antimony
Authors: Liu J , Coleman J P , Madhukar P 
Published: July 2020

Abstract
Antimony-doped tin oxide (ATO) materials have many interesting and useful properties for industrial applications. Important uses of ATO include anti-static pigments, catalysts, electrochromic devices, solar cells, gas sensors, etc. Although the electro-optical and the structural properties of ATO materials with low dopant levels have been extensively investigated,the fundamental structural/chemical properties of heavily doped ATO materials have not been well understood. We report here some preliminary results of a systematic study of the structural evolution of tin oxide nanopaiticles heavily doped with antimony.
The ATO powders were prepared by adding a mixture of antimony(V) chloride and tin(IV) chloride to deionised water with concurrent addition of sodium hydroxide. The resulting white precipitates were filtered, washed and dried at room temperature. A series of Sb-doped SnO2 samples was obtained by annealing the precipitates at various temperatures. Samples suitable for high resolution transmission electron microscopy (HRTEM) were prepared by dry-dispersing ATO powders onto holey carbon films.
Size-Controlled Synthesis of Cds Nanocrystals in Vesicles Confirmed in Situby Cryo-Transmission Electron Microscopy
Authors: Kennedy M T , Korgel B A , Zasadzinski J A , Monbouquette H G 
Published: July 2020

Abstract
Size-quantized CdS nanocrystals, synthesized within phosphatidylcholine (PC) vesicles by reaction compartmentalization, were observed in situ to confirm the proposed method of formation and to investigate the concept of membrane-mediated crystal growth. Vesicle solutions representing three different CdS nanocrystal sizes, and a solution containing unreacted CdCl2 inside vesicles, were analyzed using cryo-transmission electron microscopy (cryo-TEM). Cryo-TEM has proved capable of resolving both the vesicle bilayer and the encapsulated nanocrystal, and yields previously unknown positional information for the crystal in relation to the bilayer.
Egg-PC vesicles containing Cd2+ were formed by detergent depletion, yielding vesicles of uniform size and a defined internal Cd2+ concentration. External Cd2+ was removed from the solution by cation exchange. Ammonium sulfide was added to the vesicle dispersion to produce nanocrystals via diffusion of S2- across the vesicle membrane. Particle size was predicted based upon the vesicle size, as determined from light scattering, and the encapsulated Cd2+ concentration.
Interfacial Film Induced Fails in Titanium Salicide Interconnections with Tungsten Vias in High Density Dram Devices
Authors: Kane Terence , Anderson Ron 
Published: July 2020

Abstract
The scalability requirements of higher and higher density DRAM and logic CMOS devices has popularized the salicide process for source to drain connections using TiSi2 and ( more recently ) CoSi2.
The desirability of these salicide processes is well documented with low sheet resistivity properties offering improved access time in DRAM and faster microprocessor speeds.
Besides the obvious drawback in temperature stability of these salicides, the irregular reaction of titanium or cobalt with silicon during RTA processing can result in irregular or “rough” surface features in the salicide. Submicron contaminants (especially metallic species) introduced during in-line electrical test of Kerf structures with high wettability are not easily dislodged by conventional aqueous/ultrasonic cleaning steps. Solvent process cleaning steps can leave residues in the irregular “rough” salicide surface leading to interfacial films between the salicide and the subsequent via connection to overlying bit lines ( or metal one lines ).
Silicide Identification in Rta-Processed Ti Salicide by Analytical Electron Microscopy
Authors: Quintero A , Libera M , Cabrai C , Lavoie C , Harper JME 
Published: July 2020

Abstract
Titanium suicides have low resistivity, low contact resistance, and are widely used as interconnects in electronic devices. The most desirable structure is the C54 variant of titanium disilicide (TiSi2). It is typically formed during thermal annealing by a polymorphic transformation from the C49 TiSi2 structure. The C49 to C54 transformation has been studied extensively and there has been substantial effort to devise ways in which to lower the temperature associated with this transformation. This research uses high-resolution imaging (HREM), convergent-beam diffraction (CBED), and energy-dispersive X-ray microanalysis (EDS) to study the development of suicide morphology in response to rapid thermal annealing (RTA). Two sets of specimens have been studied: (i) 32nm Ti thin films on undoped single-crystal Si substrates [Ti/Si] and (ii) 32nm Ti films separated from an undoped single-crystal Si substrate by a 0.12nm thick Mo interlayer [Ti/Mo/Si]. This paper shows structures formed after RTA at a ramp rate 3 °C/sec to 750 °C with a hold of 1 sec
Characterization of Sil-ycy Alloy Layers Incorporating Si4c Building Blocks
Authors: Chandrasekhar D , Smith David J , Kouvetakis J 
Published: July 2020

Abstract
Group IV based alloys have received considerable attention in recent years, because of the possibility to tailor the band gap of the material system with respect to that of Si. Significant results have already been achieved with Si-Ge system, where the band gap of pseudomorphic Si1-xGex alloys is smaller than that of Si. Introduction of C onto substitutional lattice sites in Si has been proposed as a possible alternate method for tailoring the electronic properties of Si. Carbon incorporation into Si substitutionally could result in alloys whose band gap would be a function of carbon concentration and lie between the values for silicon (E =1.1 eV) and β-SiC (Eg = 2.3 eV). However, due to the low-equilibrium solubility limit of C in Si, 3.5x1017cm−3 at the eutectic temperature, highly supersaturated and metastable layers are essential to significantly alter strain and electrical properties of the alloys.
In our present study, we have synthesized and characterized Si1-yCy (0.04 &lt; y &lt; 0.20) films grown on (001) Si substrates by ultra-high vacuum chemical vapor deposition at 625°C.
Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEM
Authors: Xin Y , Wallis DJ , Browning ND , Sivananthan S , Pennycook SJ , Humphreys CJ 
Published: July 2020

Abstract
The growth of thin films on dissimilar substrates is of great technological importance for modern optoelectronic devices. However, device applications are currently limited by lattice mismatches between the film and substrate that invariably lead to defects detrimental to device performance. It is therefore of key importance that the mechanisms leading to the formation of these defects are understood on the fundamental atomic level. Correlated atomic resolution Z-contrast imaging and EELS in the STEM is a unique methodology by which this information can be obtained. In this paper, the application of this methodology to determine a novel graphoepitaxial growth mechanism for CdTe on (001)Si is demonstrated, and its potential for the study of GaN is discussed.
Fig.la shows a high resolution Z-contrast image of a cross sectional view of the CdTe/Si interface showing clearly the CdTe and Si dumbbells. Due to the differences in atomic number, the location of the interface is clear.
TEM Characterization of a Highly Oriented Diamond Film Deposited on (100) Silicon by Bias-Enhanced Nucleation (BEN) and Textured Growth
Authors: Chawla A K , Jeon S-J , Sung C , Baik Y-J 
Published: July 2020

Abstract
Currently, the aim of research in diamond film synthesis on silicon substrates is to gain an understanding of the mechanisms responsible for the development of highly oriented film and for the formation of epitaxial nuclei. With this as our goal we have applied plan-view transmission electron microscopy (TEM) for analysis of a diamond film grown on Si at various stages of film growth.
An ASTeX™ MPCVD system was used to deposit diamond on a single-crystal (100) Si substrate under the following conditions: 970°C, 700W microwave power, 2% CH4 in H2, 90 torr., and 4 hours. The growth step was preceded by a BEN stage in which a negative potential of 200V was applied to the substrate for 25 minutes at 600°C, 700W, 4% CH4 in H2, and 20 torr.. Three different types of plan-view TEM samples were prepared. For one the common procedure of backthinning, dimpling, and ion milling was applied to produce a specimen which reveals microstructures at the film surface.
Characterization of Chemically Vapor Deposited GaN on Sic on a Simox Substrate
Authors: Zhou WL , Pirouz P 
Published: July 2020

Abstract
GaN has been intensively studied because of its potential applications for the fabrication of blue- or ultraviolet-light emitting devices. Sapphire (α-Al2O3) is generally used as the substrate for growth of GaN film. However, the large lattice mismatch between GaN and Al2O3is a possible cause of the large defect density in the GaN films. Consequently, alternative substrates are being studied with the aim of growing films of lesser defect densities and improved opto-electronic properties. In this paper, we report a transmission electron microscopy (TEM) study of a GaN film grown on cubic SiC which has been obtained by carbonization of the top silicon layer of a SIMOX substrate, i.e. the system GaN/SiC/Si/SiO2/Si.
Cross-sectional TEM specimens were prepared by the conventional sandwich technique with the foil surface normal to the Si[l10] direction. The composite sample was ground and dimpled to a thickness of ∼ 10μm, and subsequently ion thinned to electron transparency.
TEM Investigation of Nitrogen-Doped Amorphous Carbon Coated Field Emitters
Authors: Myers AF , Steel EB , Ding M Q , Cuomo JJ 
Published: July 2020

Abstract
Amorphous carbon coatings, including highly sp3-bonded amorphous diamond (a-D), also referred to as tetrahedral amorphous carbon (ta-C), and diamond-like carbon (DLC), have recently been explored for field emission applications [1-3]. These coatings can be deposited uniformly at low temperatures, and possess chemical and mechanical properties similar to those of diamond. They also can be doped with nitrogen to form n-type semiconductors [4]. Diamond coatings, on the other hand, are microscopically nonuniform, usually require deposition temperatures greater than 600 °C, and cannot be doped to produce shallow donor levels [2]. Diamond, a-D, and DLC coated emitters all show enhanced electron emission properties [1-3].
The major emphasis of the work presented here is on the parallel electron energy loss spectroscopy (PEELS) characterization of the sp2 and sp3 bonded carbon in the coatings. PEELS spectra and TEM images were recorded with a Philips CM300 FEG TEM, equipped with a Gatan model 666 parallel acquisition EELS spectrometer. The operating voltage was 300 keV.
Microstructure of Pvd Al Deposition on CVD Tin
Authors: Zhang Na , McNicholas Mark , Anderhalt Bob , Slow Evan , Colvin Neil 
Published: July 2020

Abstract
CVD TiN films offer promise as a barrier to Al deposition as a result of the improved conformai step coverage of this film in 0.25 μm contact holes. As an underlayer, the TiN performs a secondary role by improving electromigration (EM) resistance. This is a result of the crystal orientation of the TiN film and its influence on the orientation of the subsequent Al layer. A &lt;111&gt;Al orientation shows improved EM resistance; however, CVD TiN has a preferred &lt;200&gt; orientation as opposed to a &lt;111&gt;PVD TiN orientation.
In this study, two parts were investigated: 1) obtain a qualified PVD Al film on a CVD &lt;200&gt; TiN barrier in terms of sheet resistance and reflectivity utilizing MRC's Eclipse™ Mark II PVD system; 2) examine the texture of the Al film utilizing Philips XL30 SEM equipped with EDAX-DX4 EDS system and Electron Back Scatter Pattern (EBSP) system.