bluuebunny/crossref_metadata_2025_split huggingface dataset:
Differentiating the Rate Capabilities of Lithium-Nickel-Manganese Oxide, Li[Ni1/2Mn3/2]O4, Insertion Materials and Electrodes Using Diluted Electrode Methods
Authors: Ariyoshi Kingo , Masuda Shumpei , Sugawa Jun 
Published: December 2020

Development of high-power lithium-ion batteries requires the optimization of the electrode kinetics of lithium-insertion materials to improve the rate-capability of these devices. The rate-capability of a lithium-insertion electrodes is controlled by the concentration overvoltages arise from changes in the Li+ ion concentration at the electrode/electrolyte interface. Two distinct rate-capability behaviors prevail depending on whether charge transport is limited by Li-ion mass transfer within the solid particles or within the interstitial spaces of the electrode.
In this study, we used the diluted electrode method is employed to characterize the two types of the rate-capability behavior exhibited by the Li[Ni1/2Mn3/2]O4 (LiNiMO) electrodes. Porous electrode to a pseudo-single- particle electrode configurations are produced by diluting the LiNiMO content with Al2O3 spectator material while maintaining the weight, thickness, and porosity of the structure. Examination of diluted electrodes containing 5-88 wt% LiNiMO reveals the rate capability of low LiNiMO-content electrodes to be superior to that of high LiNiMO-content electrodes. The rate-determining step of low-content electrodes is the transport of Li+ ions through the solid phase, whereas the rate-determining step of high-content electrodes is Li+ ion transport through the liquid electrolyte phase.
This report is the first report to distinguish between the two kinds of rate-capability behavior in lithium-insertion materials and electrodes. By defining the range of rate-capability behavior, our results should guide future studies seeking to establish the electrode kinetics of lithium-insertion electrodes and to improve their capabilities through optimization of an electrode structure.

Figure 1
Chemically Derived K2Mn3O7 As a Potassium Insertion Material:Structure and Electrochemical Study
Authors: Sada Krishnakanth , Pralong Valerie , Barpanda Prabeer 
Published: December 2020

Potassium-ion batteries (KIBs) are fast emerging as economic alternatives for partial replacement of Li-ion batteries in stationary large-scale storage application. With the rising concern over the price and availability of Li-based resources, Na-ion and K-ion batteries have come up to serve applications unrestricted by gravimetric/ volumetric energy density. When compared to Na-ion batteries, KIBs offer several merits including feasible K+ (de)insertion into graphite anode (244 mA h g-1), lower standard voltage (-2.93 V vs. SHE), high diffusion kinetics along with lower solvation radius [1].
To realize novel potassium insertion materials, we have proposed application of pristine and chemically modified (e.g. ion-exchange) sodium insertion compounds as cathodes in KIBs. Owing to the similar size of Na and K species, various sodium-based materials can act of host for K+ insertion. As a proof-of-concept study, NaxCoO2 and Na2Mn3O7 were successfully used as KIB cathodes with reversible capacity values of 82 and 132 mAh g-1 respectively [2-3]. Focusing on layered Na2Mn3O7, we have discovered a novel oxide phase by topotactic ion-exchange route using K2SO4 at room temperature. Assuming a layered structure, this new compound exhibits a reversible specific capacity of ~100 mA h g-1 at the current rate of C/20. It involves step-wise voltage profile with a nominal Mn4+/Mn3+ redox potential ~2.7 V (vs. K/K+) (Figure 1). Further, it exhibited robust cycling stability at different current rates, retaining a discharge capacity of 63 mA h g-1 even at 1C rate in the potential window of 1.5 to 3.8 V. The synthesis, structural features and electrochemical charge storage mechanism of this novel potassium insertion compound will be presented.

Reference
s
:

[1] H. Kim, J. C. Kim, M. Bianchini, D-H Seo, J. R Garcia, G. Ceder, Adv. Energy Mater. 8 (2017) 1702384.
[2] K. Sada, B. Senthilkumar, P. Barpanda, Chem. Commun. 61 (2017) 8588–8591.
[3] K. Sada, B. Senthilkumar, P. Barpanda, ACS Appl. Energy Mater. 10 (2018) 5410–5416.

Figure 1
(Invited) Manganese Dioxide Positive Electrodes for Aqueous Zinc-Ion Batteries
Authors: Adams Brian 
Published: December 2020

Tremendous work has been made in a relatively short period of time on developing the rechargeable aqueous zinc-ion battery (ZIB). The ZIB using inexpensive/abundant raw active materials is a cheaper and safer alternative to Li-ion batteries (LIBs), particularly where portability is not of primary importance. The ZIB is also considered by many to be the most promising rechargeable zinc battery technology because it addresses many of the short-comings of traditional zinc battery chemistries. By using a near-neutral pH electrolyte as compared to a strong alkaline solution, cycling of the zinc metal electrode is improved drastically. The coulombic efficiency of zinc plating/stripping is increased and internal short circuits due to dendritic growth of zinc metal are suppressed. The slightly acidic (pH 4-6) electrolyte also allows for new reversible (de)intercalation mechanisms to occur at the positive electrode. This has led to the development of several novel classes of electrode materials which store zinc cations.
One such electrode material which is capable of intercalating Zn2+ cations is manganese dioxide. Compared to the alkaline Zn-MnO2 battery in which both the zinc negative electrode and the manganese dioxide positive electrodes undergo conversion reactions, the chemistry of the ZIB is simplified. Zn2+ is stripped from the negative electrode and intercalates into the positive electrode during discharge. Upon charge, Zn2+ cations de-intercalate from the positive electrode active material and plate back onto the negative electrode as zinc metal. In this work, various forms of manganese dioxide were explored in detail for use as the positive electrode active material for zinc intercalation. Different crystal structures of MnO2 were studied and several additional factors, such as particle size and morphology were found to impact the performance of Zn2+ intercalation. The diffusion coefficients were calculated and each material was cycled in a zinc-ion battery to determine its suitability as a Zn2+ intercalation electrode in a near-neutral aqueous system. Through this structure-properties correlation, general material design rules can be drawn, guiding future R&D efforts on ZIB chemistry.

Figure 1
Charge Storage Mechanism of a Quinone Polymer Electrode for Zinc-Ion Batteries
Authors: Zhang Ye , Liang Yanliang , Dong Hui , Wang Xiaojun , Yao Yan 
Published: December 2020

Aqueous zinc-ion batteries (AZIBs) offer a potentially stable alternative to alkaline rechargeable zinc batteries in utilizing zinc metals for low-cost and safe energy storage. Two fundamental features of AZIBs are (1) near-neutral aqueous electrolytes, in which zinc dendrites growth is apparently suppressed compared with that in alkaline electrolytes, and (2) Zn2+ -storing cathode materials, which do not store protons in cathodes and maintain the near-neutral pH of an electrolyte throughout charge-discharge processes. Because of the importance of stored species at the cathode for the viability of a battery, the charge storage mechanism in cathode materials has been under scrutinization. Among cathode materials proposed for high-energy AZIBs, many vanadium oxides seem to store zinc-ions, while manganese oxides more often than not involve proton storage which raises concerns of pH variation of the electrolyte. Quinones have been recently proposed as versatile electrode materials for aqueous batteries. Early attempts of quinones for AZIBs have resulted in promising specific energy and cycling stability. It is therefore interesting to investigate the charge storage mechanism in these materials and assess their viability for practical applications.
This work focuses on the identification of stored ions in a quinone polymer, poly(benzoquinonyl sulfide) (PBQS), as an AZIB cathode material. Possible ions to be involved in the electrode reaction include zinc ions, protons, counter anions (in this case triflate), and their hydrated forms. Spectroscopic technologies suitable for qualitative and quantitative analyses of the electrode reaction of organic materials have undergone major development in recent years. Electrochemical quartz crystal microbalance (EQCM) is an established tool to quantitatively probe the stored ions in redox-active polymers and carbon materials. Recent advancement with dissipation monitoring (EQCM-D) further strengthened the technique for characterizing softer electrodes. On the other hand, Fourier transform infrared spectroscopy (FTIR) is a standard technique for qualitative detection of chemical groups, thus a useful tool to compliment EQCM-D which may lack chemical information. In-situ FTIR has been proven effective in monitoring the electrode reactions in organic carbonyl electrodes, though the use for detection of stored ions has not been reported. Here we combine EQCM-D and FTIR techniques for a comprehensive understanding of the charge storage mechanism of PBQS in a near-neutral zinc electrolyte.
Tincone-New Hybrid Organic-Inorganic Anode Material for High Performance Li-Ion Battery
Authors: Zhu Hongzheng , Aboonasr Shiraz Mohammad Hossein , Liu Jian 
Published: December 2020

Atomic layer deposition (ALD) is a nanomaterial synthesis method that draws more and more attention in the past few decades. Due to its self-limit growth nature, ALD has become a powerful tool for fabricating uniform and conformal thin film[1]. Molecular layer deposition (MLD), as a derivative of ALD, is a technique specially for organic or organic-inorganic hybrid films. Due to the carbon chains were involved [2], MLD thin film shows several more merits than ALD such as low growth temperature, flexibility and low density, which are very meaningful when applied in battery material. Studies of MLD film in battery field are usually focus on the following aspects. For example, applying MLD film as a post-treatment for electrode. In this way, MLD coating can suppress electrode volume change issue during discharge/charge processes because of its flexibility. [3] Secondly, if added an annealing process, MLD film with organic component would turn into porous carbon/metal oxide matrix. The post-anneal treatment would improve the contact between active material and conductive carbon, and also bring more site for heteroatom doping [4].
Although there are lots of studies of MLD film in battery field, only few researchers use MLD film as an organic electrode material. In our study, we synthesised Tincone MLD film on Nitrogen doped carbon nanotube (N-CNT), and test the electrochemical properties of this hybrid organic-inorganic anode material Tincone/N-CNT in Li-ion battery. As a result, Tincone film shows electrochemical activity in CV test, and good lithium storage ability in cycling test. The capacity retention of Tincone/N-CNT is 89% after 100 cycles. As a usage of MLD film for electrode material, Tincone/N-CNT enriches the ways of applying MLD method in battery field as well as energy storage area.

Keywords: MLD battery；Tincone；Lithium ions battery

References:

[1] Meng X , Wang X , Geng D , et al. Atomic layer deposition for nanomaterial synthesis and functionalization in energy technology[J]. Mater. Horiz, 2017, 4(2):133-154.
[2] Choudhury D , Sarkar S K , Mahuli N . Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone[J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015, 33(1):01A115.
[3] Luo, L.; Yang, H.; Yan, P.; Travis, J. J., et al. Surface-coating regulated lithiation kinetics and degradation in silicon nanowires for lithium ion battery. ACS Nano 2015, 9, 5559−5566.
[4] Chen, C., et al., Nanoporous nitrogen-doped titanium dioxide with excellent photocatalytic activity under visible light irradiation produced by molecular layer deposition. Angew Chem Int Ed Engl, 2013. 52(35): p. 9196-200.
(Invited) Theoretical Understanding of Nanoscale Ferroelectric Field-Effect-Transistor Having a Poly-Domain Structure
Authors: Park Hyeon Woo , Hwang Cheol 
Published: December 2020

The emergence of ferroelectricity in doped HfO2 and (Hf,Zr)O2 (HZO) thin film with a typical thickness ~10 nm brings back the great interest in ferroelectric (FE) memories including the conventional ferroelectric random access memory, ferroelectric field-effect transistors (FEFET), and more recent negative capacitance field-effect transistors, in not only academia but also memory industry. In the industry, one of the most important issues concerning a FEFET is whether FEFET based NAND (FE-NAND) memory can be a next-generation device with superior performance to a conventional CTF-based NAND memory. For this purpose, it must have the multi-level capability and lower interference between adjacent memory cells. Because of sufficiently large ferroelectric polarization (10~15 uC/cm2 for typical HZO thin film), the multi-level capacity of FE-NAND would be higher than that of CTF-based NAND. However, an experimental result of FE-NAND devices shows that only a tenth of the expected memory window for the reading operation was achieved. At the same time, ten times larger erasing/writing voltages are required.
In this work, we presented the comprehensive FEFET model to describe the writing process and reading process in FEFET from the fundamental viewpoint of metal-oxide-semiconductor (MOS) FET device physics in conjunction with the FE switching phenomenon. To capture the multi-domain nature of the ferroelectric thin film, we adopted the time-dependent Ginzburg-Landau (TDGL) formalism as a core physics of the switching kinetics. Furthermore, the FEFET model has been extended to a 3-Dimensional FE-NAND simulation. These models showed that the multi-domain nature of the ferroelectric film, which is shared by serial gates in the FE NAND device, not only degrades gate controllability on a target memory cell but also decreases a magnitude of surface potential. The extensive simulation results provided a critical view to understand the degraded memory window of FEFET and a possible strategy for the improvement.
(Plenary) The Revival of Compound Semiconductors and How They Will Change the World in a 5G/6G Era
Authors: Collaert Nadine , Alian AliReza , Banerjee Aritra , Chauhan Vikas , ElKashlan Rana Y. , Hsu Brent , Ingels Mark , Khaled Ahmad , Kodandarama Komal Vondkar , Kunert Bernardette , Mols Yves , Peralagu Uthayasankaran , Putcha Vamsi , Rodriguez Raul , Sibaja-Hernandez Arturo , Simoen Eddy , Vais Abhitosh , Walke Amey , Witters Liesbeth , Yadav Sachin , Yu Hao , Zhao Ming , Wambacq Piet , Parvais Bertrand , Waldron Niamh 
Published: December 2020

Compound semiconductor devices have always intrigued the semiconductor industry due to their high intrinsic mobilities and the heterostructure engineering enabled by those materials. While CMOS has been the vehicle pushing the industry to ever smaller devices, better performance and of course reduced cost, the unique properties of compound semiconductor devices are finding renewed interest in an era where an increasing amount of data is being sent around, stored and analyzed. While several applications like photonics, high-power electronics and image sensors also benefit from enabling a variety of III-V materials and devices, specifically, in the RF Front-End Modules of 5G radio chips [1], these materials allow to address the challenges related to speed, efficiency and output power needed for this next generation wireless communication standard. And while 5G is in full deployment, with first addressing the sub-6GHz frequency bands and in a later phase the mm-wave frequency bands, first publications are already appearing on 6G, where even higher frequencies (beyond > 100GHz) will be targeted [2].
GaN [3] and InP-based devices [4] have a clear performance advantage over Si CMOS and SiGe HBT/BICMOS, but their lower integration potential, still restricted to smaller size substrates and lab-like processing today, is one of the key limitations for adopting those technologies for high-volume 5G and 6G applications. Upscaling those devices to a 200mm/300mm Si platform will be a first step to improve yield and maturity and increase complexity. In a second phase, upscaling and maturing these technologies will allow to co-integrate these devices, usually quite dissimilar to CMOS, with advanced Si technology nodes and provide a fully integrated heterogeneous system.
In this talk, we will review the status and progress toward integrating these devices on a CMOS-compatible platform.
References
[1] N. Collaert et al., "Semiconductor technologies for next generation mobile communications", 14th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, pp. 1-4, Nov. 2018.
[2] White Paper from NTT Docomo regarding 6G, January 2020, [Online]. Available: https://www.nttdocomo.co.jp/english/binary/pdf/corporate/technology/whitepaper_6g/DOCOMO_6G_White_PaperEN_20200124.pdf

[3] U. Peralagu et al., “CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance”, IEDM 2019, pp.398-401.
[4] A. Vais et al., “First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology”, IEDM 2019, pp. 178-181.
(Plenary) Creating the Interface between the Universe and Data with Integrated Photonic Sensors
Authors: Miller Benjamin L. 
Published: December 2020

We are in an exciting period in history, as advances in our understanding of biology tell us how networks of DNA, RNA, proteins, and other molecules influence human health and disease. In order to detect all these molecules, measure their concentrations, and convert that into data that can be accessed digitally, we need the appropriate interface: a sensor. This talk will discuss the ways we are developing new optical sensor systems that can be used as diagnostic systems in the clinical lab, at the point of care, and (eventually) at home. Achieving these goals requires advances in chemistry, materials science, optics, and the fabrication technologies to make it all work “at scale”, in a format that can go beyond the laboratory and into the commercial sphere.
Integrated photonics is a particularly attractive option for building broadly useful sensor platforms. Here, the light source, sensing mechanism, and detection system are all in the same plane. As such, these sensors are small and simple enough that they could be incorporated into a cell phone. For the past five years, we have worked in partnership with the American Institute for Manufacturing Integrated Photonics (AIM Photonics) to establish designs and manufacturing strategies for photonic chemical and biological sensors. AIM is a public-private partnership established to develop US manufacturing capability in photonics. This talk will detail progress in demonstrating AIM Photonics’ fabrication capabilities in chemical and biological sensing, with a particular focus on rapid assays for SARS-CoV-2, the virus causing COVID-19 disease.
(Invited) GaN Power Electronics and Associated Fundamental Limits
Authors: Xing Huili Grace , Li Wenshen , Nomoto Kazuki , Jena Debdeep 
Published: December 2020

How does it impact the design principles of power electronics in ultra-wide bandgap semiconductors? What fundamentally different roles does a p-region play in a power electric device in comparison to a semi-insulating region, for example, in the popular GaN HEMT based power transistors? What are the practical fundamental limits for the unipolar devices such as Schottky Barrier Didoes without the help of p-type? What are the unique advantages a polar semiconductor family like GaN can offer? What is polarization doping and how is polarization-doping fundamentally different from impurity doping? I will reflect on our efforts in seeking answers to these questions in the past 20 years in GaN power electronic devices as well as realizing state-of-the-art devices; some example publications can be found in references 1-12.
Our work has been in part supported by ARPAe SWITCHES, AFOSR FA9550-17-1-0048, and NSF DMREF 1534303, making use of shared facilities at CNF (NSF ECCS-1542081), CCMR (NSF MRSEC DMR-1719875) and equipment supported by DMR-1338010.

References:

[1] W. Li, Z. Hu, K. Nomoto, D. Jena and H. G. Xing. Compound Semiconductor, April/May Issue, Page 22-28 (2019). [2] P. Kozodoy et al., Journal of Applied Physics 87, 770 (2000); https://doi.org/10.1063/1.371939. [3] H. G. Xing et al, Proc. of 73rd DRC (2015) DOI: 10.1109/DRC.2015.7175549. [4] Z. Hu et al., Appl. Phys. Lett., 107, 243501(2015). [5] K. Nomoto et al., IEEE Electron Device Letters, 37(2), pp.161 (2016). DOI: 10.1109/LED.2015.2506638. [6] M. Zhu et al., Appl. Phys. Lett. 110, 182102 (2017); doi: 10.1063/1.4982920. [7] W. Li et al., IEEE Trans. Electron Dev. 64(4), 1635-1641 (2017). DOI: 10.1109/TED.2017.2662702. [8] Z. Hu et al. in Proc. of 75th DRC (2017). [9] W. Li et al, Appl. Phys. Lett. 113, 062105 (2018) DOI: 10.1063/1.5041879. [10] W. Li et al. IEEE Trans. Electron Dev. 65(6) (2018). DOI: 10.1109/TED.2018.2829125. [11] M. Meneghini et al., Phys. Status Solidi A, 1900750 (2020) DOI: 10.1002/pssa.201900750. [12] W. Li et al., J. J of Applied Physics 58, SCCD15 (2019) https://doi.org/10.7567/1347-4065/ab0f1b