Control of Magnetism with Electrochemical Potential
Authors: Allongue Philippe , Maroun Fouad , Lamirand Anne , Tournerie Nicolas , Di Nan , Novak Rafael L 
Published: February 2020

Magnetic ultrathin films (thickness of only a few atomic plane)s are of special interest because their magnetic anisotropy, i.e. the direction of magnetization at rest, is controlled by interfaces with substrate and capping layer [1]. Such films are involved in GMR and TMR junctions which are the building blocks to design memories and logic circuits [2]. Device operation relies on ability to reverse the magnetization within one component at a time. The best method is currently Spin Torque Transfer, STT, by injection of spin polarized current. The method allows addressing magnetization reversal in one single component but requires high current density (1010 A/m2) that leads to Joule heating [3].
Physical electrochemistry and electrodeposition have a role to play in above context because electrochemical growth of epitaxial films is almost routine technique. In situ STM and in situ SXRD showed that nucleation and growth is now well controlled [4] [5] [6]. Moreover, the development of in situ magnetic properties (magnetooptical Kerr Effect, MOKE) [7] has been a decisive step forward to correlate structure / morphology with magnetic anisotropy (MA).
This presentation will focus on the use of electrochemical interface to tailor MA with applied voltage [8] [9] [10] which is most promising approach to design ultralow power consumption devices [11]. Newest results will be discussed.
References:
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