bluuebunny/crossref_metadata_2025_split huggingface dataset:
Principles and Possibilities of Backscattered Electron Micro-Tomography in the Scanning Electron Microscope
Authors: Rau E I , Robinson VNE 
Published: July 2020

Abstract
Multi layer structures are widely used in micro electronics devices and visualisation of their sub surface layers is important to understand the nature and properties of these devices. One of the more common methods of sub surface imaging is ion beam milling, in which sections of the overlaying material are removed to reveal sub surface details. Some disadvantages of this technique are that the equipment required is expensive and the technique is destructive. Another technique is to image a device at different accelerating voltages and determine at which voltage a particular feature is first detected. A major disadvantage of this technique is that the underlying layers are always observed partially obscured by the overlaying material. The development of a non destructive technique for three dimensional characterisation of electronic, physical, compositional and/or topological properties of these structures could be useful.
One such technique is micro tomography using the backscattered electron (BSE) signal in the scanning electron microscope SEM [1].
Nucleation and Growth of Aromatic Nitro Compound on Semi-Insulating Silicon Substrates by Organic Molecular Beam Deposition
Authors: Seo KI , Lowe CW 
Published: July 2020

Abstract
From the viewpoint of variety in molecular design, organic molecules have great potential because some of them have large optical nonlinearities. Organic molecules due to a delocalized π-conjugated systems have a number of applications. Since the nitro group is one of the strongest electron-acceptor group, the noncentrosymmetric structures of MNA [2-methyl-4-nitroaniline] and MAP [methyl-(2,4-dinitrophenyl)-aminopropanoate] provide a successful approach for nonlinear optical (NLO) properties.
Heteroepitaxy has become one of the important methods in modern semiconductor technology. In this work the polymeric thin films have grown on crystalline materials by organic molecular beam deposition (OMBD) technique. This provides a highly controlled process of film growth of various organic thin films.
The behaviors of film formation and preliminary results of some properties of mixed MNA-MAP thin films are reported. A surface scientist studying organic interfaces must apply traditional surface science tools with great care. The experimental procedure is followed here in order to examine their morphological features.
Micromagnetic and Microstructure-Property Relationships in Magnetic Recording Media
Authors: Sinclair R , Tang K , McKinlay SE 
Published: July 2020

Abstract
The further development of computer hard disk technology involves ever increasing density of information storage. Current levels of recording are about 1 Gbit per square inch, which will increase by a factor often over the next couple of years. The methodology is well-established: ferromagnetic cobalt alloy thin films (≈20 nm) are sputtered onto an appropriate substrate. Improvement in the magnetic performance (e.g., coercivity, signal-to-noise) requires manipulation of the microstructure by the deposition conditions. Transmission electron microscopy (TEM) is really the only characterization tool which can yield all the necessary information (structural, chemical and magnetic) because of the dimensions involved (e.g., grain sizes of 10-20 nm, with grain boundary segregation an important consideration). This article illustrates some recent contributions to understanding the structure-property-processing combination in this rapidly developing area.
The typical hard disk is made up from an aluminum alloy substrate, a 5-10 micron thick, hard NiP electrodeposited layer, a chromium underlayer, the magnetic Co alloy and a protective thin carbon overcoat.
Electron Holographic Imaging of Magnetic Materials at Nanometer Scale Resolution
Authors: McCartney MR 
Published: July 2020

Abstract
Traditional electron microscopy techniques for imaging magnetic microstructure include out-of-focus Fresnel or Lorentz imaging, Foucault imaging and differential phase contrast (DPC). Off-axis electron holography provides access to both the amplitude and phase of the electron wave which has passed through the sample and therefore can provide direct, quantitative information about the in-plane component of the magnetic induction. The Philips CM200-FEG microscope which was used for the holography described here is equipped with a powerful mini-lens below the specimen enabling 2nm spatial resolution and only a small residual field at the sample. The combination of high coherence and increased magnification enable quantitative mapping of magnetic induction at the nanometer scale.
Electrostatic or magnetic potentials give rise to phase shifts in the holographic interference fringes which can be quantified following reconstruction. In the presence of a magnetic field, the phase equation (for constant composition and neglecting diffraction effects) becomes:
Quantification of Interfacial Segregation by Atom Probe Field Ion Microscopy
Authors: Miller MK 
Published: July 2020

Abstract
The atom probe field ion microscope is a powerful technique for the quantification of solute segregation at internal interfaces due to its ultrahigh spatial resolution. The segregation behavior for all elements is determined by collecting the atoms that originate in a cylinder centered on the boundary region. The method of analysis is dictated by the orientation of the boundary in the field ion specimen. The general case and the two special orientations are shown schematically in Fig. 1. The special case where the unit normal to the interface plane is at 90° to the unit vector parallel to the cylinder of analysis, ϕ = 90°, permits a large number of atoms to be collected but the spatial resolution is defined by the effective diameter of the probe aperture and is typically chosen to be between 1 to 5 nm. The special case where ϕ = 0° provides the highest spatial resolution but only a limited number of atoms are collected from the boundary in each cylinder of analysis.
The Effects of P and Pt on the Microstructure of Co-Cr-P-Pt Thin Film Magnetic Recording Media
Authors: Choi Ju-Hwan , Sung Changmo , Allard Lawrence F , HoShin Kyung 
Published: July 2020

Abstract
Because of their high coercivity, cobalt alloy thin films are among the most popular materials used for ultra-high density longitudinal magnetic recording media. The recording and magnetic properties of the materials are related to their microstructure; in particular, depletion of Co in a grain boundary phase, and physical separation of the grains act to increase coercivity and thus to produce low noise media. We are studying a new alloy system comprising 18 nm thick Co-Cr-P-Pt films (Mr.t ≈ 0.9 memu/cm2), prepared by DC sputtering. A coercivity of 2600 Oe or higher was obtained in these films even when they were deposited without heating the substrate or applying a bias voltage. The effects of P and Pt addition were characterized by high-resolution TEM coupled with energy dispersive x-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS). A Hitachi HF-2000 field emission TEM was used to image both low P (≈ 6 at. %) and high P (≈ 12 at. %) samples, and to provide a 1 nm beam for high spatial resolution EDS and EELS.
Quantification of Cu Segregation to Grain Boundaries in an Al - 4 Wt.% Cu Thin Film Using High Resolution X-Ray Mapping
Authors: Carpenter DT , Watanabe M , Barmak K , Williams DB , Smith DA 
Published: July 2020

Abstract
A typical microprocessor chip has several million devices patterned into it and, as fabrication techniques improve, device dimensions continue to shrink. This miniaturization results in a corresponding decrease in the dimensions of the interconnects between devices, causing an increased susceptibility to failure by current-induced mass transport, or electromigration (EM). It is well known that the addition of a small amount of Cu to Al interconnects increases their median time to failure profoundly. Since EM in these films occurs almost exclusively at grain boundaries, the simplest explanation for the role of Cu is that it segregates to the grain boundaries and reduces their diffusivity. Analytical electron microscopy studies have shown that Cu segregates to grain boundaries in Al under the proper conditions, and its concentration was measured using X-ray energy dispersive spectroscopy (EDS), but only a small number of boundaries were measured.In order to determine whether the distribution of Cu affects the resistance of a material to EM damage, it is first necessary to characterize the Cu content of the material as a whole, which requires the analysis of large numbers of boundaries rather than just a few.
A Comparison of Stem-EDX and Auger Analysis of Segregation: The Plaudits and the Pitfalls.
Authors: Tatlock GJ 
Published: July 2020

Abstract
Equilibrium segregation to grain boundaries has been studied for many years, but only recently have the techniques to quantify such segregation at high spatial resolution become widely available. These include, for example, the Auger surface analysis of fractured samples, or the study of boundaries edge-on in a field emission gun STEM equipped with energy dispersive X-ray analysis or electron energy loss spectroscopy. The key question, however, is whether these different techniques yield the same results when applied to a specific set of samples, and this paper reviews some of the successes and problems associated with such studies.
For STEM analysis of grain boundary segregation, several instruments now routinely give probe sizes of ∼1nm. Hence line profiles across grain boundaries at this level of resolution are quite feasible. However a larger probe with greater probe current and better X-ray counting statistics is often more useful, especially if sample drift is a potential problem.
Segregation Measurements in Ferritic Steels Using AES and EDX
Authors: Vatter I A , Titchmarsh JM 
Published: July 2020

Abstract
A quantitative comparison has been made of intergranular segregation in four 9%-Cr ferritic steel alloys, S1-S4 doped, respectively, with 560, 300, 120 and 25ppm P, by both Auger Electron Spectroscopy (AES) and EDX in the analytical electron microscope (FEG-STEM). The strengths, weaknesses, relative accuracies and precision of the two methods were investigated in view of the different equipment, sample preparation, characteristic signals and unrelated assumptions in quantifying the results. No such investigation of ferritic steels has previously been reported, even though they are widely used in engineering components and can be susceptible to embrittlement. Comparative studies have been reported for austenitic alloys.
The steels were solution-treated, tempered at 750°C and aged at 500°C for 100 hours. In-situ impact at low temperature in the VG MA500 AES apparatus caused mixed cleavage and intergranular fracture, the latter increasing with P content. Spectra from up to 80 individual intergranular facets were recorded from each alloy using a 5nA-10KeV beam from an LaB6 electron source under conditions which had been optimised by prior investigation.
STEM Investigation of Segregation and Local Structure at Grain Boundary in Tetragonal Zirconia
Authors: Gu H , Wakai F 
Published: July 2020

Abstract
Y or Ca stabilized tetragonal ZrO2 (TZP) exhibits superplasticity at high temperature, and can also be used as solid electrolytes. Those properties are dictated by structure and chemistry of grain boundaries, which can be controlled by segregation of impurities or additives. The grain boundaries were found either covered by amorphous films or free of the film. Co-segragation of additives and stabilizers has also been observed. To fully understand the correlation between segregation and grain boundary structure, a dedicated STEM (VG HB601) capable of EDX/EELS analysis and phase/Z-contrast imaging is employed to study 3Y-TZP doped with 0.3 and 0.9 mol% SiO2.
Although Y-L lines arc dominated by overlapping Zr-L lines in EDX, Y excess at grain boundaries can still be measured by “spatial difference” which removes Zr signal with a spectrum from the bulk. The co-segregation of Si and Y is also observed (Fig. 1) at many boundaries. Their average excesses arc 5±2 nm−2and 25±10 run−2 respectively, close to 1 monolayer each of SiO2 and Y2O3.
Electron Spectroscopic Investigations of the Solute Drag Like Effect in Fe-C-Mo Alloys
Authors: Menon ESK , Reynolds WT , A.G.Fox  
Published: July 2020

Abstract
The role of various alloying elements on the kinetics of austenite decomposition in steels is well documented. One of the least understood aspects is the ability of some elements like Mo to drastically reduce the kinetics of ferrite (α) growth in austenite (γ).Within specific ranges of transformation temperatures and alloy compositions, the transformation of austenite can cease entirely for extended periods of time (transformation stasis). The phenomenon is quite pronounced in Fe-C-Mo alloys and is clearly evidenced by a horizontal region in the plot of the fraction transformed vs. isothermal reaction time. Based on microstructural and kinetic evidence, the occurrence of the transformation stasis phenomenon has been ascribed to a "solute drag like effect" caused by the segregation of Mo atoms to α : γ boundaries. The proposal that interface chemistry alters the growth kinetics of ferrite is quite difficult to verify as the segregation is expected to be confined to a boundary region less than a nanometer in width.
High Spatial Resolution EBSD Study of Nanosized Epitaxial Particles
Authors: Cosandey F 
Published: July 2020

Abstract
Traditionally, the structure and orientation relationship of individual catalyst particles on various oxide substrates have been studied by transmission electron microscopy. However, the combination of high resolution scanning electron microscopes (HRSEM) equipped with Schottky field emission sources with CCD cameras for recording electron backscatter diffraction (EBSD) paterns, it is now possible to obtain both morpholgy and orientation of individual particles with high spatial resolution. In this paper, we present results on the application of combined EBSD with HRSEM to determine the epitaxial orientation relationship of 80 nm Au particles on TiO2 (110). An evaluation of the spatial resolution limit of EBSD using Monte Carlo simulation of backscattered electron trajectories is also presented.
The TiO2 (110) single crystal surfaces used in this study were prepared in UHV using surface science tools followed by in-situ metallization. After deposition of 15 nm Au at 300K followed by annealing at 800K, the samples were transferred in air to the Field Emission Scanning Electron microscope (LEO 982 Gemini) for high resolution imaging.
Monte Carlo Simulation of Spatial Resolution for Electron Backscattered Diffraction (EBSD) with Application to Two-Phase Materials
Authors: Ren S X , Kenik E A , Alexander K B 
Published: July 2020

Abstract
The study of texture and grain boundary misorientation in multiphase materials has been greatly benefited from the recent automation of the electron back-scattered diffraction (EBSD) technique. With this technique, each phase in a multiphase material can be individually sampled and analyzed. This is of great significance and interest in the study of thin films, inclusions and multiphase alloys. Spatial resolution, which depends on experimental conditions such as beam energy and specimen tilt, and the material being studied, is critical in order to determine the orientation of different phases in multiphase materials.
The Monte Carlo (MC) method has been effectively used to investigate spatial resolution in single phase materials. In this paper, the MC simulation is modified and applied to two-phase geometries. For a bulk two phase (Al/Au) specimen, the coordinate system was defined such that the x-axis was normal to the electron beam and the interface, y-axis parallel to the interface and coplanar to the beam direction, and z-axis perpendicular to the specimen surface which was tilted 70°, as shown in Fig. 1.
REM Studies of Surface Dynamics on Si Surfaces
Authors: Yagi K , Aoki K , Minoda H , Tanishiro Y , Tamura H , Suzuki T 
Published: July 2020

Abstract
Recent developments in techniques of real space observations of surfaces are notable. In them reflection electron microscopy (REM) is a unique technique where in-situ real time observations of wide areas of surfaces are possible. In the present paper recent studies of surface dynamic processes on Si surfaces are reviewed. Observed dynamic processes are adsorption induced successive phase transitions, adsorbate induced facet formations and step rearrangements induced by a reversal of specimen heating current direction(so called current effect) and by a reversal of the sign of the surface strain(strain effects).
Figure 1 reproduces a series of REM images and RHEED patterns taken during successive phase transition induced by Au deposition on a clean Si(lll) surface at 780°C[l]. (a) shows a REM image taken before Au deposition. Line images with zigzag in shape are atomic steps on the surface. The surface steps up to the right as indicated by a step mark. The corresponding RHEED pattern in (b) shows that the surface has the 7×7 structure.
In Situ REM Observation of Step Dynamics on Silicon Surfaces
Authors: Latyshev AV , Yagi K 
Published: July 2020

Abstract
Clear understanding of the structural and morphological transformations on the crystal surfaces can only be extracted from considerations of the dynamical properties of surface evolution. So ultra high vacuum reflection electron microscopy (UHV REM) has been applied to in situ studies of step behaviors on the silicon surfaces during various treatments. Dependence of the surface morphology on the number of parameters is reviewed with new results. Special attention is paid to influence of the electromigration phenomena and strain fields on structural evolution of the surfaces during sublimation, phase transition and epitaxial growth. The stability of the atomic step distributions is discussed in the frame of kinetical morphological transitions on silicon surfaces during DC heating of studied crystal [1].
The step motion during sublimation shows a strong influence of stress fields on the step configurations [2]. The importance of surface stress is obvious because in equilibrium conditions there is a residual stress on the surface due to existence of broken bonds.
In-Situ UHV TEM Investigations of the Initial Stages of Cu(001) Oxidation
Authors: Yang J C , Yeadon M , Kolasa B , Gibson J M 
Published: July 2020

Abstract
We studied the beginning oxidation stage of a model metal system by in-situ transmission electron microscopy (TEM) in order to gain insights into the initial kinetics of oxidation. In-situ TEM experiments can distinguish between nucleation and growth since individual oxide islands are imaged. We chose to investigate Cu, since it is a simple face-centered cubic metal. Also, Cu is a highly promising metal interconnect material because of its low resistivity and good electromigration properties as compared to Al.
Single crystal -1000Å 99.999% purity copper films were grown on irradiated NaCl in an UHV e-beam evaporator system. The free-standing copper film was placed on a specially designed holder, which permits resistive heating of the sample. The microscope used for this experiment is a modified ultra-high vacuum, with base pressure of 10−9 torr, JEOL200CX, operated at l00kV. To remove the native oxide formed during exposure in air, the Cu film was annealed at ∼350°C
Domain Dynamics in Ferroelectric Thin Films Via In-SituTEM Analysis
Authors: Lin Xiwei , Dravid VP , Auciello O , Bjormander C , Foster CM 
Published: July 2020

Abstract
Due to spatial constraints and small dimensions (&lt;1 μm), the ferroelectric domain statics and dynamics in thin films can be significantly different from their bulk counterparts. Further, it has been recognized that electrode-film interfaces play a key role in the fatigue and retention phenomena in the thinfilms for ferroelectric memory applications, which are closely associated with barrier formation and charged defects trapped at various interfaces including the domain boundaries. Thus, it is imperative to utilize in-situ TEM to directly observe the domain switching at a length-scale which is essential (i.e. 1-10nm) for better understanding of the domain dynamics and their interactions with microstructure in thin filmferroelectrics.
We have successfully carried out in-situ TEM observations of domain dynamics in Pb(Zr.5Ti.5)O3 (PZT) thin films using PZT-based capacitor structures. The capacitors were produced by growing PZT layers (∼550 nm thick) on SrRuO3 bottom electrode layers (∼100 nm thick) on (001) SrTiO3 substrates using MOCVD. The top electrode consisted of an ∼200 nm silver layer.
Hydrogen-Induced Phase Separation of Palladium-Rhodium Alloys Using an Environmental Cell TEM
Authors: Teter DF , Field RD , Thoma DJ 
Published: July 2020

Abstract
The palladium-rhodium system has been extensively studied for its hydrogen absorption characteristics. However, the phase diagram of the palladium-rhodium system has not been conclusively determined below 800 K. Shield and Williams have experimentally determined the incoherent miscibility gap in Pd-Rh alloys using electrical resistivity studies, however the coherent miscibility gap and spinodal have not been determined. Recently work by Noh and Flanagan has suggested that hydrogen enhances metal atom mobility and may increase the kinetics of phase separation in Pd-Rh alloys. Field and Thoma found that hydrogen causes a Pd-10%Rh alloy to decompose during an in situhydrogen charging experiment in an environmental cell TEM. According to the calculations by Gonis et al. of the miscibility gap for the palladium-rhodium system, the Pd-10%Rh alloy may be within the chemical spinodal at room temperature.
In this work, two palladium-rhodium compositions were investigated. The first was a Pd-10 at.% Rh alloy produced by melt-spinning, and the second was a Pd-30at.
%Rh alloy which had been arc-melted and cold rolled followed by an annealing treatment to homogenize the material. TEM specimens were prepared by punching 3 mm disks from the material.
Development of an In-Situ Nanoindentation Specimen Holder for the High Voltage Electron Microscope
Authors: Wall MA , Dahmen U 
Published: July 2020

Abstract
Progress on the development of an in-situ nanoindentation specimen holder for the Kratos 1.5MeV HVEM located at the National Center for Electron Microscopy, Berkeley, CA, USA, is reported. There is currently considerable work being reported on the mechanical properties (i.e., hardness, delamination, wear, etc.) of single and multicomponent thin films, nanoclusters and fibers by techniques such as nanoindenting, ref. [1] are recent examples. However, with all of these tests there has not been direct, unambiguous observation of the response or evolution of the microstructure. With many of these reports, there has been little “post-mortem” TEM characterization and there has been no real attempts to simulate these dynamically in the TEM. For the case of nano-testing of the materials the interaction volumes are often on the scale of the natural sampling volume of the HVEM. It seems natural that post-mortem and in-situ TEM characterization techniques be applied.