bluuebunny/crossref_metadata_2025_split huggingface dataset:
The association between serum 25-hydroxyvitamin D level and subclinical atherosclerosis in healthy population
Authors: Mohammadzadeh Vida , Mehrpour Masoud , Ghoreishi Abdoreza , Kamali Koorosh , Zamani Babak 
Published: December 2020

Background: Subclinical atherosclerosis is the asymptomatic phase of carotid atherosclerosis, and its early diagnosis is important to prevent cerebrovascular diseases. Although the vitamin D plays a role in the structure of vessels, the association between the serum level of vitamin D and subclinical atherosclerosis has not been well-studied. We aimed to investigate the association between serum vitamin D level and carotid artery intima-media thickness (CIMT) in Iranian population.
Methods: One hundred individuals with the age range from 20 to 50 years with no history of cardiovascular risk factors were selected for the analysis. Measurements of serum 25-hydroxyvitamin D3 [25(OH) D3] concentration and CIMT were made. Confounding factors such as diabetes, hypertension (HTN), smoking, alcohol, tobacco, dyslipidemia, cardiovascular disease (CVD), high body mass index (BMI), history of drug intake especially calcium, vitamin D, statins, and anti-hypertensive drugs were considered and then excluded from our study.
Results: The mean serum vitamin D level was 15.55 ± 0.42 ng/ml, whereas in the increased intima-media thickness (IMT), it was 12.50 ± 9.50 ng/ml. 55% of the subjects were diagnosed with subclinical atherosclerosis (IMT ≥ 0.75 mm). Mean IMT was 0.74 ± 0.12 mm; however, it was higher (0.86 ± 0.30) in severe vitamin D deficiency group. The analysis showed an association between serum 25(OH) D3 level and CIMT (P = 0.002). 44% of those participants with subclinical atherosclerosis had also a severe vitamin D deficiency, while only 13% of normal people had a severe vitamin D deficiency. Also, a correlation was observed between severe vitamin D deficiency and the presence of plaque or higher IMT.
Conclusion: Serum 25(OH) D3 level was inversely correlated with CIMT in our investigated subjects with no cardiovascular risk factor.
Resenha: Martins, F. J. (2020). A escola e a educação do campo. São Paulo: Pimenta Cultural.
Authors: Gonçalves Gisele de Souza 
Published: December 2020

Esta resenha tem o objetivo de apresentar o livro “A escola e a educação do campo”, do autor e pesquisador professor Dr. Fernando José Martins, que organiza a obra em seis capítulos construídos a partir de seus estudos, pesquisa e experiências referentes à educação do campo e os elementos que a constituem.
Palavras-chave: Educação do Campo, Escolas do Campo, Formação.

Review: Martins, F. J. (2020). A escola e a educação do campo. São Paulo: Pimenta Cultural.
ABSTRACT. This review has the objective of presenting the book “The school and the rural education”, by the author and researcher professor Dr. Fernando José Martins, which organizes the work in six chapters built from his studies, research and related experiences to rural education and the elements that constitute it.
Keywords: Rural Education, Countryside Schools, Professional Qualification/Continuing Education.

Revisión: Martins, F. J. (2020). A escola e a educação do campo. São Paulo: Pimenta Cultural.
RESUMEN. Esta revisión tiene como objetivo presentar el libro “La escuela y la educación del campo”, del autor e investigador profesor Dr. Fernando José Martins, que organiza el trabajo en seis capítulos construidos a partir de sus estudios, investigaciones y experiencias afines de la educación del campo y los elementos que la constituyen.
Palabras clave: Educación del Campo, Escuelas del Campo, Formación.
Violent Victimization Among Lesbian, Gay, and Bisexual Populations in the United States: Findings From the National Crime Victimization Survey, 2017–2018
Authors: Bender Annah K. , Lauritsen Janet L. 
Published: December 2020

Objectives. To estimate US nonlethal violent victimization rates for lesbian, gay, and bisexual (LGB) males and females aged 16 years and older and to compare disparities among LGB and straight males and females, controlling for other correlates of victimization. Methods. We used data from the 2017 and 2018 National Crime Victimization Survey (NCVS) to provide nationally representative rates of various forms of violent victimization for self-identified LGB and straight persons. Multivariable models assessed the risk for violence associated with LGB status. Results. Total violence rates were 2 to 9 times higher among LGB persons compared with heterosexuals. For some forms of violence (e.g., rape and sexual assault, violence with serious injuries, and multiple offender violence) there were notably high disparities between bisexuals and heterosexuals. With adjustment for covariates, LGB orientation was associated with odds ratios nearly 2 to 4 times those of heterosexuals. Conclusions. This is one of the first known uses of NCVS data to estimate LGB victimization, revealing substantially higher rates of violence directed at LGB individuals. Public Health Implications. Sexual orientation and gender identity questions in federal surveys such as the NCVS enable monitoring of violent victimization rates and should continue. Collecting these data can help researchers understand victimization risk and guide appropriate resources toward victim services, especially important given the high violent crime levels experienced by LGB individuals.
Package Related Failure Mechanisms in Plastic BGA Packages Used for ASIC Devices
Authors: Parekh K. , Milburn R. , Georgia K. 
Published: December 2020

Abstract
This paper describes various package related failure mechanisms observed in the plastic surface mount Ball Grid Array (BGA) package. Two types of plastic BGA packages commonly known as 225 OMPAC™ (Over Molded Pad Array Carrier) and 225 GTPAC (Glob Top Pad Array Carrier) are covered in this paper. The GTPAC is not offered as a production package, but it is used for commercial prototypes and evaluations. The failure analysis results discussed in this paper are primarily of the devices which failed at different times during various reliability and qualification testing over a period of two years. The failure analysis results of field returns (about 10% of al the devices analyzed) from customers for the same period are also included in this study. Of all the devices in the BGA packages which were failure analyzed, about 50% lailed due to package related problems. All the package related failures fall into two major categories of failure mechanisms, package delamination and cracked open copper traces on the printed circuit board (PCB). The delamination resulted in a variety of physical damage such as lifted ball bonds at the die pads, fractured bond wires in the span as well as at the heel of the crescent bonds on the PCB substrate, and cracking of the encapsulant. The copper traces cracked from two types of stresses, mechanical and thermal. In addition, some of the techniques used for the failure analysis are briefly discussed in this paper.
A Novel Approach to Identifying and Validating Electrical Leakage in Printed Circuit Boards Through Magnetic Current Imaging
Authors: Hillman Craig 
Published: December 2020

Abstract
Superconducting Quantium Interferance Device (SQUID) microscopy uses detection of magnetic fields to image current paths within electronic devices and has been successful in non-destructively identifying the location of low leakage currents, even when the failure site was between a power and ground plane. This article presents a case study in which the customer was experiencing ignition of a 20-layer printed circuit board after approximately 1000 to 4000 operating hours in an indoor-controlled environment. High currents on the board resulted in extensive damage, effectively preventing initial identification of the failure site, failure mechanism, or root-cause. Based on a review of potential failure mechanisms, measurement of relevant parameters, and the results of SQUID microscopy, the process of electrochemical migration around or through the particles was determined to be the most likely root-cause of electrical shorting between power and ground.
Diagnostic Fault Simulation for the Failure Analyst
Authors: Bodoh Dan , Blakely Anthony , Garyet Terry 
Published: December 2020

Abstract
Since failure analysis (FA) tools originated in the design-for-test (DFT) realm, most have abstractions that reflect a designer's viewpoint. These abstractions prevent easy application of diagnosis results in the physical world of the FA lab. This article presents a fault diagnosis system, DFS/FA, which bridges the DFT and FA worlds. First, it describes the motivation for building DFS/FA and how it is an improvement over off-the-shelf tools and explains the DFS/FA building blocks on which the diagnosis tool depends. The article then discusses the diagnosis algorithm in detail and provides an overview of some of the supporting tools that make DFS/FA a complete solution for FA. It also presents a FA example where DFS/FA has been applied. The example demonstrates how the consideration of physical proximity improves the accuracy without sacrificing precision.
Diagnosing DACS (Defects That Affect Scan Chain and System Logic)
Authors: Huang Yu , Cheng Wu-Tung , Tsai Kun-Han , Crowell Greg , Mcmahon Chris 
Published: December 2020

Abstract
In this paper, DACS stands for Defects that Affect Chain and System, which could be any type of silicon defects caused by an unintentional interaction between a scan chain signal and a system logic signal. The device could fail scan chain testing or show up as a latent failure in the customer’s system. A novel diagnosis methodology is proposed to locate both ends of a DACS. The proposed algorithm can be generally applied to any type of DACS. Experimental results on industrial chips demonstrate the effectiveness of the proposed method.
Application of LADA for Post-Silicon Test Content and Diagnostic Tool Validation
Authors: Kong Chia Ling , Castro Edwin P. 
Published: December 2020

Abstract
Embedded cache size has dramatically increased with the advent of Intel Hyper-Threading and Multi-Core Technology, making many of the existing cache test validation method less and less practical, if not obsolete. As a result, the effort to sustain and improve array test quality, which is ever so critical to achieve DPM goals, is becoming a formidable challenge. In this paper, we present a test content validation procedure through novel application of Laser Assisted Device Alteration (LADA), i.e. soft fault injection in state elements, which had proven itself in Itanium® 2 array test quality improvement. While the procedure was originally targeting cache test content, the underlying concept has been successfully deployed to expedite scan test content and fault isolation tool validation.
Surface Effect on SEM Voltage Contrast and Dopant Contrast
Authors: Li-Lung Lai , Gao Huimin , Xiao Hong 
Published: December 2020

Abstract
The Voltage Contrast (VC) [1-3] and Dopant Contrast [4-7] in Scanning Electron Microscopy (SEM) [8] have been widely used in the Silicon (Si) semiconductor manufacturing field to localize the failure site from plane-view and inspect the doping profile along cross-section with spatial resolution in the nanometer (nm) range. In this article, we demonstrate how the surface effect, such as topography or material variation, impacts the conventional prediction for the voltage and dopant contrast in the SEM images. The mechanisms and applications for the SRAM and real products are described.
Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based Photovoltaics
Authors: Kittler Martin , Arguirov Tzanimir , Schmid Reiner , Seifert Winfried , Mchedlidze Teimuraz 
Published: December 2020

Abstract
Crystalline silicon used for fabrication of solar cells, such as multicrystalline silicon (mc-Si), contains a high density of extended crystal defects. Since mc-Si wafers exhibit an inhomogeneous defect distribution, there is a need to combine the spectral capabilities with the ability of spatially resolving the defect areas. This paper reports application of luminescence and electron-beam-induced current (EBIC) techniques for characterization of defects in solar Si. The first part introduces luminescence features of defective Si and discusses application examples. The second part starts with explanation of the EBIC technique, including details about the temperature dependence of the EBIC defect contrast c(T). Then, application examples of the c(T) behavior and the analysis of the "interaction" of grain boundaries with p-n junctions are discussed. The paper demonstrates the potential of luminescence for nondestructive characterization of Si wafers and solar cells in terms of in-line defect detection and process control.
Developing a Chemistry-Assisted Focused Ion Beam Process for ‘On-Demand’ Solid Immersion Lenses in Silicon
Authors: Scholz P. , Kerst U. , Boit C. , Kujawa T. , Lundquist T. 
Published: December 2020

Abstract
Focused Ion Beam has proven to create refractive solid immersion lenses in silicon that can significantly improve the resolution of optical backside analysis tools. The SIL performance in our previous works has been limited though, mostly due to a pure sputtering process. This problem is addressed by developing a chemistry-assisted FIB process, offering the ability to create larger SIL shapes. A 50 µm wide SIL shape is presented with a lens area two and a half times larger than the largest FIB SIL we created so far. The resulting wider opening angle has the potential of better spatial resolution and higher photon collection efficiency. 370 nm wide image features are resolved using the FIB created SIL expanding the resolution capabilities of the used laser scanning microscope considerably.
Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy
Authors: Chung Jayhoon , Lian Guoda , Rabenberg Lew 
Published: December 2020

Abstract
Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.
Scanning Capacitance Microscopy: A Valuable Tool to Diagnose Current Paths in 3D-Capacitors Process
Authors: Delaroque Thomas , Danilo Karine , Voiron Frédéric , Bunel Catherine , Domengès Bernadette , Laflutte Marc , Dalmolin Renzo 
Published: December 2020

Abstract
Some process abnormalities can be very difficult to detect with conventional FA techniques. Scanning Capacitance Microscopy (SCM) has been shown to be a reliable and versatile tool and the case analysis presented in this work illustrates its significant role. In this paper, a 3D-PICS capacitor used as an element of a band pass filter of a cardiac detection chain was studied. As the electrical and physical diode current signature of this device did not satisfy the targeted needs, a complete failure analysis flow was performed, including OBIRCH and Scanning Capacitance Microscopy characterizations. SCM accumulated measurements allowed extracting and validating a trend according to electrical performance variations from the center to the edge of the wafer. As a result, the root cause of the level of this diode reverse current was identified and corrective actions could be introduced in the process to meet the application requirements.
Non Destructive Failure Analysis of 3D Electronic Packages Using Both Electro Optical Terahertz Pulse Reflectometry and 3D X-Ray Computed Tomography
Authors: Li Yan , Cai Yongming , Pacheco Mario , Dias Rajen C. , Goyal Deepak 
Published: December 2020

Abstract
The 3D package configuration presents challenges to conventional Fault Isolation (FI) and Failure Analysis (FA) methods. This paper illustrates that with correct Electro Optical Terahertz Pulse Reflectometry (EOTPR) data processing, interpretation and additional reference spectra, the combination of EOTPR to isolate the open/high resistance failure location and 3D X-ray Computed Tomography (CT) to image the failure is very effective for System in a Package (SIP) FI/FA.
Study of Static Noise Margin, Cell Stability and Influence of Electron Beam on Sub-30nm SRAM Using SEM-Based Nanoprobing with 8 Nanoprobes
Authors: Ng T.H. , Dawood M.K. , Tan P.K. , Tan H. , Oh C.K. , Lam J. C. , Mai Z.H. 
Published: December 2020

Abstract
SEM-based nanoprobing has proven vital in identifying nonvisual failures through electrical characterization in current FA metrology for fault identification. With eight probes used concurrently, the system could have the ability to obtain other important information such as cell stability as well as the static noise margin (SNM). In this work, the cell stability and SNM at different biasing conditions at low electron beam energy (500eV) of a sub-30 nm technology node SRAM device have been characterized. Bit cell stability, static noise margin test as well as leakage study between two adjacent floating wordines were performed on the SRAM samples. Results show that no significant degradation has been introduced during the data acquisition and imaging processes in the SEM. Good resolution imaging with passive voltage contrast can be achieved with low electron voltage (500eV) throughout the nanoprobing process.
Advanced Methods and Software for Enhancing Analytical Tools Capabilities during Chip Diagnostic and Characterization
Authors: Stellari Franco , Song Peilin 
Published: December 2020

Abstract
In this paper, we present a comprehensive overview of several advanced methods and software solutions that we have developed during the years in support of chip diagnostic and characterization in our lab. These techniques apply to the analytical tools in our lab, such as time-integrated and time-resolved emission microscopes, and are devised to help improve productivity and ease of use. In particular we discuss emission-based auto-focusing for detecting very faint signals, processing large sets of images for high-resolution mapping of very large field of views, careful registration of emission images to circuit layout shapes, and advanced processing of the data for extracting the valuable underlying information. In the past, these techniques have been extensively used in support of many diagnostic and characterization applications, and they have been effective enablers for the development of innovative methods and tools.
Failure Analysis Methodology on Systematic Defect in N+ poly/NWELL Varactor in RF Analog_PLL due to Implanter Charging Issue
Authors: Boon Ang Ghim , Changqing Chen , Peng Ng Hui , Ping Neo Soh , G Magdeliza , Jony Indahwan , Tat Lee Mern 
Published: December 2020

Abstract
In this paper, a zero yield case relating to a systematic defect in N+ poly/N-well varactor (voltage controlled capacitor) on the RF analog circuitry will be studied. The systematic problem solving process based on the application of a variety of FA techniques such as TIVA, AFP current Imaging and nano-probing, manual layout path tracing, FIB circuit edit, selective etching together with Fab investigation is used to understand the root cause as well as failure mechanism proposed. This process is particularly critical for a foundry company with restricted access to data on test condition setup to duplicate the exact failure as well as no layout tracing available at time of analysis. The systematic defect was due to gate oxide breakdown as a result of implanter charging. It serves as a good reference to other wafer Fabs encountering such an issue.
Fabrication and Characterization of Helium and Neon Ion Deposited Platinum Wires for Circuit Edit Applications
Authors: Thompson William , Stern Lewis , Wu Huimeng , Ferranti Dave , Xia Deying , Khanom Fouzia , Rack Philip D. , Gonzales Carlos , Phaneuf Michael W. 
Published: December 2020

Abstract
Sub-nanometer focused inert gas ions derived from a Gas Field Ion Source (GFIS) contain properties that can improve the dimensional and conductivity characteristics of ion beam deposited platinum circuit edit wiring. The following paper, presents ion interaction simulations that help provide insight into the factors which determine the ultimate wire width, resistivity, and metal deposition rates. An experimental result that has aided in the understanding of the primary wire width limiting mechanism is also presented. Finally, a description of the ion beam and precursor properties used for the platinum deposition is provided, a long with a discussion of the wire resistivity measurement technique and challenges. To conclude, the prospects for GFIS ion induced dielectric and metal deposition for circuit edit and nanofabrication applications are discussed.
22 nm BEOL TDDB Defect Localization and Root Cause Analysis
Authors: Kane Terence , Wang Yun Yu 
Published: December 2020

Abstract
For 22nm and below technologies which involve as many as fifteen back end of the line (BEOL) metallization levels, these leading edge technology nodes pose real challenges in defect localization and root cause analysis. Due to scaling, the reduction in copper land cross section area is accompanied by increased current density and electromigration failure rates. Time to Dielectric Defect Breakdown (TDDB) shows an increase in fallout with successive technology node from 32nm and below. Similarly, the reduced dielectric thickness increases the electric field stress prompting the necessity for porous, ultra low k dielectric (ULK) films. Defect localization is difficult due to the complexity of these multiple metal layers along with the presence of the porous, low k dielectric films which exhibit shrinkage or void formation when exposed to an e-beam/FIB ion beam &gt; 1keV. Due to the porosity of these ULK dielectric films, they are especially susceptible to gallium ion implantation. It has been reported elsewhere that suppressing copper diffusion at the copper land/cap interface can be achieved by depositing a thin layer of CoWP and doping the copper seed layer with manganese [15, 16, 17]. However, a method for analytically confirming that these approaches for suppressing the copper diffusion do not affect TDDB performance/electromigration behavior must be demonstrated.
The Application of Magnetic Force Microscopy for Detection of Subsurface Anomalies in Semiconductor Device Wiring Levels
Authors: Kaszuba Phil , Alwine Frank , Moszkowicz Leon , Wells Randy 
Published: December 2020

Abstract
Subsurface wiring level anomalies in VLSI semiconductor devices are extremely difficult, if not impossible to analyze without de-processing the device to expose suspect wiring. Magnetic Force Microscopy (MFM) is a scanning probe technique that requires minimal sample preparation and has the capability to sense magnetic fields in proximity to thin film conductors with high lateral resolution [1]. In this study, multiple VLSI device conductors were intentionally modified and then the magnetic field around the energized conductors was analyzed using MFM. An overview of the technique and results of the magnetic field analysis are discussed.