bluuebunny/crossref_metadata_2025_split huggingface dataset:
Expert System for EPMA
Authors: Fournier C , Merlet C , Staub PF , Dugne O 
Published: July 2020

Abstract
Analysis parameters for an electron microprobe are numerous, and the accuracy of the quantitative analysis is very sensitive to the selection of these experimental conditions. The expert system intends to optimize the choice of each analysis parameter as well as to automate the phases of a quantitative analysis on all kinds of materials. To summarise, the aim of the expert system is to simplify the procedures, improve the accuracy of results and control the analysis time. The figure 1 illustrates the various stages of the expert system.
The starting point of the expert system is an interactive questionnaire concerning the sample,( ie, what is already known), and about the expectations on the analysis,( ie, the accuracy of the results and/or the duration of the analysis required by the operator). Then, the expert system performs a semi-quantitative analysis on the sample. Based on the acquisition of a wavelength qualitative spectrum, this method is a way to obtain the sample composition in a short time with the advantages of the WDS system, and with a reasonable accuracy.
Characterization of Aluminum Flocs in Distribution Drinking Water Using Differential Interference Contrast (DIC), Transmission and Scanning Electron Microscopy (TEM & SEM) and Energy Dispersive X-Ray Analysis (EDXA)
Authors: Song Y , Stark A 
Published: July 2020

Abstract
Conventional water treatment plants that use alum (aluminum sulfate) as a coagulant have been dealing with the issue of residual alum carry over from the treatment plant into the distribution system. The basic product formed whe alum is added to water is aluminum hydroxide floc. This floc grows in size and density as it captures suspended particulates and then is settled out. Smaller floc aggregates that pass through the settling process are in the most part removed by sand filtration. However due to the amphoteric characteristics and solubility properties of aluminum alon with it’s many different compounds, carry over of aluminum compounds through the filter is a phenomena that is a great concern to the water industry. These residual aluminum compounds produce small hydroxide floes that coat the inner surfaces of distribution pipes causing head loss or increased energy requirements for water pumping.In addition phosphate compounds (poly and ortho blends) have recently been added to the distribution system to reduce the leaching and corrosion of lead and copper from pipes.
Monte Carlo Simulation of Electron Scattering for Arbitrary 3D Structures Using A Multi-Quadtree Geometry Representation
Authors: Schiebl CO , Ambrose V 
Published: July 2020

Abstract
In the semiconductor industry the importance of Computer Aided Materials Analysis (CAMA) is growing rapidly due to ever decreasing feature sizes on semiconductor wafers. Due to the fact that the excitation volume is often larger than the typical feature size on a processed state-of-the-art semiconductor wafer it was necessary to extend SeSAME, a Monte Carlo simulator for arbitrary 2- dimensional geometries, to be able to handle arbitrarily shaped 3-dimensional structures. This is achieved by using a so called multi-quadtree approach for the discretization of 3-dimensional geometries.
A multi-quadtree consists of several parallel arranged modified quadtrees. This means, an arbitrarily shaped 3-dimensional structure is divided into parallel slices of constant geometry in direction perpendicular to the quadtree plane. The number of such 2-dimensional slices and the thickness of these slices is solely limited by the available memory. Therefore, really 3-dimensional structures may be resolved in principal with any resolution.
Misfit Dislocation Core Structures At Ba0.5 Sr0.5TiO3 /LaAlO3 Interfaces
Authors: Gao H-J , Rafferty B , Chen CL , Singh RK , Pennycook SJ 
Published: July 2020

Abstract
The trend of replacing trench and stack capacitors in a dynamic random access memory (DRAM) with a planar configuration has stimulated the development of high dielectric constant materials with reliably low leakage current and high dielectric breakdown strength. In this regard, high dielectric constant materials, such as PbZrxTiyO3(PZT), BaTiO3, SrTiO3, PbTiO3, and BaxSr1-xTiO3, have been extensively investigated as dielectrics in the last few decades. Of these, the sol id-solution quaternary BaxSr1-xTiO3, (BST) combines the high dielectric constant of BaTiO3, with the structural stability of SrTiO3, is one of the most promising materials for DRAM cells in very large-scale integrated circuits. BST shows a paraelectric phase for x&lt;0.7 at room temperature, which provides additional features such as no aging or fatigue effects from ferroelectric domain switching. However, so far, there have been few studies of the interfaces between BST and the substrates, particularly at the atomic-resolution level.
X-Ray Mapping of Bimetallic Catalysts in Mesoporous Silica
Authors: J. Keast Vicki , A. Midgley Paul , F.G. Johnson Brian , Meurig Thomas John 
Published: July 2020

Abstract
The small electron probe available in a scanning transmission electron microscope (STEM), when combined with X-ray energy dispersive spectroscopy (XEDS), enables the acquisition of 2D compositional maps with high spatial resolution and sensitivity. In addition to the spectroscopic information available, images sensitive to atomic number (so called Z-contrast images) can be acquired simultaneously using high-angle annular dark field imaging (HAADF). These capabilities make the STEM an ideal tool to study elemental distributions in catalysts containing 1-2 nm sized metal clusters within a support of low atomic number. The material examined in this work comprises of mesoporous silica in a honeycomb structure with channels of ˜3 nm diameter (designated MCM-41) in which nano-clusters of the bimetallic Pd6Ru6 have been introduced into the channels using metal-cluster carbonyls as precursors. Details of the specimen preparation are similar to that outlined by Shepard et al. for a Cu-Ru bimetallic catalyst.
Fig. 1 shows (a) a bright-field (BF) image, (b) a HAADF image and (c-f) X-ray elemental maps acquired on a VG 603 STEM, operated at 300 keV with probe size of ˜1.4 nm (FWTM) and probe current of ˜0.6 nA.
Quantitative Composition Maps of Magnetic Recording Media by EFTEM
Authors: Bentley J , Wittig JE , Nolan TP 
Published: July 2020

Abstract
Elemental mapping of Co-Cr-X based magnetic recording media at resolutions approaching 1 nm by energy-filtered transmission electron microscopy (EFTEM) can provide quantitative measurements of intergranular Cr segregation for correlation with magnetic properties and materials processing. The thin-film media present many challenges for EFTEM methods, such as diffraction contrast and closelyspaced edges. The goal of this work was to provide robust methods for mapping quantitative compositions in such materials. Results presented here are for a model material of 60 nm of Co84Cr12Ta4 on a 75 nm Cr underlayer; both films were d.c. magnetron sputtered onto a NiP-plated Al substrate pre-heated to 250°C. Other compositions and thinner layers (∼30 nm) have also been studied. EFTEM was performed on back-thinned, plan-view specimens with a Gatan Imaging Filter (GIF) interfaced to a 300 kV LaB6 Philips CM30. Optimized acquisition conditions have been detailed elsewhere. Besides core-loss image series, zero-loss I0 (slit width Δ=10eV), low-loss Ik (Δ=30eV), and unfiltered IT images were recorded, and maps of t/λ. = ln(IT / I0), where t is specimen thickness and λ. is the total inelastic mean free path, were produced.
An EELS-Study of the Chemical Homogeneity in Cu-In-S Films
Authors: Su DS , Schattschneider P , Zeitler E 
Published: July 2020

Abstract
The development of high-efficiency, low-price photovoltaic devices relies on epitaxially grown layers of ternary chalcopyrites. The question addressed in this study is to which extent the near stoichimetric composition of CuInS2 grown on hydrogen terminated Silicon, Si (111), varies cross the sample area. The method usually employed [1] for such analysis is Argon-Rutherford Backscattering (RBS), whose spatial resolution, however, is limited to the order of millimeters. This limit can readily be overcome by electron microscopic and electron spectroscopic means.
For observation and recording of the energy loss spectra in the transmission electron microscope, samples were carefully prepared by mechanic polishing and ion-milling. The thinning began with polishing the Si substrate on ALLED diamond lapping films, down to 10 μm and a final ion-milling in a Gatan ion-thinning equipment from the Si-side (Ar+ 3 kV, the incident angle less than 7°).Spectra were taken by means of a Gatan image filter (GIF - 100) in a Philips CM200 FEG electron microscope operated at 200 kV.
Jump Ratio Elemental Mapping in Amorphous Ice Cryo-EFTEM Opens the Window to Solution Chemistry
Authors: Bovin J-O , Huber T , Balmes O , Malm J-O , Karlsson G 
Published: July 2020

Abstract
The preparation of frozen amorphous thin films of solutions containing crystals, and imaging with cryo energy filtered TEM, opens for the first time the possibility to image the chemistry of solids interacting with liquids. The future possible areas of research include: dynamic of crystal growth processes, adsorption mechanisms, ion exchange, structure determination of solids in equilibrium with solutions, etc.
The sample preparation uses a controlled-environment vitrification system1. Vitrification of the liquid phase was achieved by plunging the grid into liquid ethane. The vitrified specimen was transferred into the microscope by an Oxford CT3500 cryo-holder. The specimen temperature in the microscope column can be kept at -−183 °C. The thickness of the vitrified films, including the crystals, should be about 250 nm or preferably less. The Philips CM120 BioTWIN Cryo, here used for cryo-TEM, has a focal length of 6 mm and a structural resolution of 0.4 nm.
Energy Filtering of Schottky Field Emission Gun Using Fringe Field Monochromator
Authors: Mook HW , van Veen AHV , Kruit P 
Published: July 2020

Abstract
The energy resolution which can be attained in electron energy loss spectroscopy (EELS) is determined by the energy spread of the electron source. The energy width of a high brightness electron gun (typically 0.4 to 0.8 eV) blurs the energy spectrum. A pre-specimen energy filter or monochromator must be used to reduce the energy width of the beam below 0.1 eV to allow detailed EELS analysis of the electronic band structures in materials. The monochromator can not only improve EELS, but it is also capable of improving the spatial resolution in low voltage SEM, which is limited by the chromatic blur of the objective lens. A new type of monochromator the Fringe Field Monochromator has been designed and experiments in an ultra high vacuum setup show the monochromatisation of a Schottky Field Emission Gun.
Z-Contrast Imaging and EELS Analysis of Chromium Doped Diamond-Like Carbon
Authors: Fan X , Dickey EC , Pennycook SJ 
Published: July 2020

Abstract
Diamond-like carbon (DLC) has attracted considerable interest with a variety of potential applications [1]. A new class of amorphous films has been produced recently by incorporating metals within the carbon network. The electrical conductivity of these films varies a wide range, however nonlinear with the metal concentration. It is believed it is because metals may form clusters. Such nano-phase metal cluster encapsulated by an inert matrix can offer interesting applications, for example as nano-electrodes used in electrochemistry[2]. It is therefore fundamentally important to observe the metal cluster formation. By using Z-contrast imaging [3], the metal distribution can be directly determined on the atomic level. The local metal concentration and other electronic properties cafi also be analyzed by spatial resolved electron energy loss spectroscopy (EELS)
Measurement of Effective Extinction Distances in Zone Axis Silicon
Authors: Yu Z , Vanfleet RR , Silcox J 
Published: July 2020

Abstract
Extinction distances for two beam conditions are readily available through many sources, but under more complex zone axis conditions extinction distances are not well known. The use of thickness fringes as an approximate thickness estimate under zone axis conditions, such as in high resolution Annular Dark Field imaging, can be a useful tool. We have measured thickness vs. fringe number under zone axis conditions using low loss Electron Energy Loss Spectroscopy (EELS). Work was done on the Cornell UHV HB501 STEM.
Several orientations of silicon were glued together and thinned in cross section by the wedge technique. Additional thinning was done by low angle ion milling. Surface oxide was removed with an HF etch before loading into the microscope.Each piece of silicon was tilted to the zone axis condition and low loss EELS spectra was taken at selected points. The thickness fringes were numbered with the following convention: the center of the first black fringes close to the edge is 1 and the center of the second black fringe is 2, etc.
Archie Howie Symposium : Celebrations in Pioneering Electron Microscopy
Authors: Gai PL , Boyes ED , Carter CB , Marks LD , Pennycook SJ 
Published: July 2020

Abstract
The first MSA Special Symposium honors Professor Archie Howie CBE FRS for his pioneering contributions to the physics and applications of electron microscopy, initially in TEM and more recently also for SEM; and his leadership, outstanding teaching and wide ranging collaborations in these and related fields.
Professor Howie’s important contributions have included fundamental studies of diffraction contrast effects in the TEM which have been extensively leveraged in numerous applications and collaborations, by Howie, his coworkers and many others. They have had a major impact in column approximations, an early discovery of the weak beam effect in many beam computer simulations of coherency strain contrast and subsequent advances in dislocation weak beam imaging, and the first identification of 311 planar defects in irradiated Ge. Inelastic scattering and particularly valence losses, electron channeling, optical potential and x-ray production, amorphous materials were all major contributions, as were the series of projects centered on novel STEM methods.
Extended and Point Defects in Diamond Studied With the Aid of Various Forms of Microscopy
Authors: Steeds JW 
Published: July 2020

Abstract
Introduction
There is considerable interest in CVD diamond layers for a wide variety of applications. Growth of high quality and phase pure material is now achieved in a number of laboratories but it remains to optimize the growth process for particular applications so that physical properties approaching or even exceeding those of the best natural diamond can be achieved. We have found that the combined use of a wide range of different microscopies is effective in the process of refinement.
Diamond quality and phase purity
Raman spectroscopy is widely used to investigate the phase purity of diamond layers. Infra-red Raman is particularly sensitive to the presence of traces of non-diamond carbon in diamond while ultra-violet Raman reveals the presence of traces of diamond carbon in layers that largely are not sp bonded. For thick rather perfect layers confocal micro-Raman mapping is a convenient method for revealing the locations of non-diamond regions.
Scattering Cross Sections in Electron Microscopy and Microanalysis
Authors: Rez Peter 
Published: July 2020

Abstract
In all scattering experiments some measure is need of the strength of the scattering interaction. The scattering cross section, which has dimensions of area, is a quantity that can be defined for any scattering interactions, irrespective of the nature of the scatterer, or the particle or radiation being scattered. To define a scattering cross section, refer to the geometry of Figure 1. If I0 is the incident number of particles, Is the number of particles scattered through an angle θ with an energy loss ΔE, N is the number of scatterers/ unit volume and t is the thickness of the specimen (or length of the scattering region) then where σ(θ,ΔE) is the scattering cross section. The product N t represents the number of scatterers per unit area as seen by the incident beam
In electron microscopy all scattering arises from the Coulomb interaction between the incident electron and the electrons or nuclei or the atoms in the specimen.
Low Voltage Scanning Electron Microscopy (LVSEM) in Perspective
Authors: Boyes ED 
Published: July 2020

Abstract
In the past quarter century low voltage SEM (LVSEM) has been developed for use in a wide range of applications, and it has become the main area of innovation in SEM, and now perhaps more widely in electron microscopy. The intellectual challenge (1,2) has been transformed into a vital tool of modern technology in the semiconductor, polymer and chemical industries, and is widely used in the materials and biological sciences (3, 4). It has been claimed by this author and others that LVSEM is the rational and preferred state of SEM, but unfortunately at the time of the first SEMs only higher voltage systems could be built with the technologies available half a century ago (1). The primary advantage of the SEM remains the use of real bulk specimens with a minimum of potentially invasive preparation. A wide area in the range of square mms to sq inches can contain aperiodic, or otherwise infrequent, events in or on the surface, or in a simple snapped cross-section, and always using relatively stable bulk samples.
Characterisation of Amorphous Materials By Electron Diffraction and Atomistic Modelling
Authors: Cockayne D J H , McKenzie D R , McBride W , Goringe C , McCulloch D 
Published: July 2020

Abstract
Disordered or ‘glassy’ materials are of significant technological value. Their structure can be investigated by diffraction (neutron, X-ray, electron) techniques. When the available volume is very small (eg thin films, non-homogeneous structures) only electrons are suitable. Cockayne and McKenzie developed a technique of RDF analysis using energy filtered electron diffraction which gives information on structures of amorphous materials through the reduced intensity function ϕ(s) and the reduced density function G(r). This technique has been applied successfully to many systems.
A major limitation to the use of G(r) for characterisation of amorphous materials arises from the fact that, for electron diffraction, the G(r) measured is a combination of all partial radial distribution functions for each species in the solid. In addition, in practice there are many different models which will equally well fit the data. In order to overcome these difficulties, refinement needs to be done using a realistic starting atomic configuration. For this reason, we have produced starting models using ab-initio molecular dynamics (Car-Parrinello scheme).
EELS Characterization of Electronic Structure in Group III - Nitrides Compared With Synchrotron Ellipsometry Results
Authors: Brockt G , Lakner H 
Published: July 2020

Abstract
EELS in the low loss region of the spectra (&lt; 50eV) provides information on excitations of outer shell electrons and thus the electronic structure of a specimen material which determines its optical properties. In this work dedicated EELS methods for the experimental acquisition and analysis of spectra are described which give improved information about the electronic structure near the bandgap region at a spatial resolution in the range of nanometers. For this purpose we made use of a cold field emission STEM equipped with a dedicated EELS system. This device provides a subnanometer electron probe and offers an energy resolution of 0.35 eV. Application of suitable deconvolution routines for removal of the zero loss peak extracts information on the closest bandgap region while Kramers-Kronig transformation deduces the dielectric properties from the measured energy loss function. These methods have been applied to characterize the optical properties of wide-bandgap materials for the case of group Ill-nitride compounds which are currently the most promising material for applications on optoelectronic devices working in the blue and ultraviolet spectral range.
An Automated and Rapid Process for Determining Number of Atoms in Supported Ultra-Small Metal Clusters
Authors: Yang JC , Bradley S , Gibson JM 
Published: July 2020

Abstract
Since heterogeneous catalysis depends on surface chemistry, insights into the structure of supported catalytic materials is vital for understanding catalysis. We have developed a mass spectroscopic technique using very high angle annular dark field images in a scanning transmission electron microscope (STEM), that gives the number of atoms per cluster. We have also developed a robust interactive computer program to analyze these images rapidly. In this proceeding, we will present our method and results on analyzing ultra-small and dispersed Pt clusters on amorphous carbon, as well as our preliminary results of Pt on γ-A12 O3.
The ultra-small Pt clusters on the amorphous carbon Cu grid were made by a proprietary technique. Imaging for the STEM-based mass-spectroscopic technique was performed on a Field Emission Gun (FEG) VG HB601 STEM operated at l00kV. The absolute measured intensity from the clusters were converted to scattering cross-sections, which can then be converted to number of atoms: More details of this method can be found in Singhal, Yang and Gibson.
Direct Observation of Growth Behaviour of Athermal Omega-Phase Crystals in a Beta-Titanium Alloy Due to Cooling to 77k Using In-Situ Dark Field Imaging Technique
Authors: Matsumoto Hajime , Sukedai Eiichi , Hashimoto Hatsujiro 
Published: July 2020

Abstract
INTRODUCTION
It has been reported by many authors that metastable β-Ti alloys such as Ti-Nb, Ti-V and Ti- Mo indicate the negative temperature dependence of electrical resistivity at low temperature since Ames et al., found the dependence on Ti-Nb alloys in 1954. Williams et al., suggested that the phenomenon resulted from formation of athermal co-phase crystals. In order to clarify the origin, electron diffraction pattern analyses were carried out using a specimen cooling stage and both of start and finish temperatures of formation of athermal co-phase crystals were decided. However, it is necessary to reveal the morphology of athermal ω-phase crystals to study the relationship between the electrical resistivity change and appearance of athermal ω-phase crystals. On the other hand, although electron diffraction pattern analyses are able to identify the atomic structures of crystals, which appear the diffraction spots, it is not so easy to reveal the detailed morphology of the crystals. Also, it has to consider effects of electron irradiation to transformations.
Analysis of Extended Energy-Loss Fine Structure of Nanometerscale Clusters
Authors: Ito Y , Jain H , Williams DB 
Published: July 2020

Abstract
Small atomic clusters are of great importance for applications such as catalysts whose activity depends on the surface of the cluster. Attempts to determine the atomic short-range order and size of clusters have been made by analyzing the extended X-ray absorption fine structure (EXAFS). However, the analysis was made on an average of many small clusters. Analysis of extended energy-loss fine structure (EXELFS) in an electron energy-loss spectrum (EELS) has developed to the point where in some cases, the quality of the results is comparable to its X-ray analogue, EXAFS. No other technique provides nanometer-scale spatial resolution of the analyzed area for determining the atomic structure. Most EXELFS analysis has been performed on the K-ionization edge of lighter elements. For heavier elements, a more complex ionization edge such as the L-edge has to be used, due to the inefficiency of collecting high quality EEL spectra at higher energy-losses (Z &gt; 18).