bluuebunny/crossref_metadata_2025_split huggingface dataset:
Microanalytical Characterization of Structure and Defects for the Development of Low Temperature Silicon Epitaxial Growth
Authors: Jones KM , Thiesen J 
Published: July 2020

Abstract
The nano-scale dimensions of next generation VLSI and ULSI devices will drive the development of a variety of new processing requirements. Currently device processing conditions from substrate cleaning to thin film deposition require temperatures in the range of 600°C to 1200°C. In order to realize a Si device circuit architecture which integrates Si/Ge structures or the needed super abrupt junctions of buried channel CMOS, low temperature processes must replace those in current production lines. For these processes to be successfully developed and implemented, proper characterization techniques must be used. In the case of epitaxy, cross-sectional TEM is the tool of choice. We will discuss the prominent role that TEM has played in the development of a new Si epitaxy technology. Recently, at the National Renewable Energy Laboratory (NREL), we have shown low temperature, 195°C to 400°C, Si epitaxy via hot-wire chemical vapor deposition- HWCVD. In the past HWCVD has been used to produce amorphous, micro-crystalline, and polycrystalline Si thin films.
Grain Boundary Segregation and Irradiation-Assisted Stress Corrosion Cracking of Stainless Steels
Authors: Kenik EA , Busby JT , Miller MK , Thuvander AM , Was G 
Published: July 2020

Abstract
Irradiation-assisted stress corrosion cracking (IASCC) of irradiated austenitic stainless steels has been attributed to both microchemical (radiation-induced segregation (RIS)) and microstructural (radiation hardening) effects. The flux of radiation-induced point defects to grain boundaries results in the depletion of Cr and Mo and the enrichment of Ni, Si, and P at the boundaries. Similar to the association of stress corrosion cracking with the depletion of Cr and Mo in thermally sensitized stainless steels, IASCC is attributed in part to similar depletion by RIS. However, in specific heats of irradiated stainless steel, “W-shaped” Cr profiles have been observed with localized enrichment of Cr, Mo and P at grain boundaries. It has been show that such profiles arise from pre-existing segregation associated with intermediate rate cooling from elevated temperatures. However, the exact mechanism responsible for the pre-existing segregation has not been identified.
Two commercial heats of stainless steel (304CP and 316CP) were forced air cooled from elevated temperatures (∽1100°C) to produce pre-existing segregation.
Nanoscale Structural Characterization at the Titanium/Sol-Gel/Primer/PETI-5 Interface
Authors: D. Holbery James , M. Fisher Robert 
Published: July 2020

Abstract
Characteristics of the interfacial region between a polymer and substrate are critical to the durability of adhesive-adherend system performance. The High Speed Civil Transport (HSCT) requires structural laminates to be light weight, non-corrosive, environmentally safe, and able to withstand extreme service conditions (Mach 2.4 with in-service temperatures at 177°C, projected life to 120,000 hours). The present work characterizes multi-layer laminates comprised of a Titanium substrate (6A1-4V and 15V-3Cr-3Al-3Sn alloy), a silicate/zirconate sol-gel coating with aminopropyl functionality (nominally 1000 Angstroms), a NASA developed PETI-5 psuedothermoplastic polyimide primer (nominally 1000 Angstroms), and a high toughness, thermo-oxide stable PETI-5 adhesive. Previous studies report the physical effect of aging; therefore, this work aims to measure the nano-mechanical properties of the interface utilizing nano-indentation and AFM, focusing on the accelerated time-dependent changes due to extreme environmental exposure.
Samples were prepared by sectioning each laminate (No Environmental Exposure, 1000 and 2000 Hours at 200°C) in two locations, one section externally exposed to environmental test conditions and the other from the middle of the laminate.
Combined HRTEM and High Spatial Resolution Analysis of Homologous Compounds InMO3(ZNO)m By A 300kv FE-TEM
Authors: Bando Yoshio , Li Chufei , Nakamura Masaki , Kimizuka Nobuo 
Published: July 2020

Abstract
A series of homologous compounds InMO3(ZnO)m (M=In, Fe, Ga and Al, m=integer) has been synthesized successfully by the present authors. From x-ray diffraction, the strutcure is considered to be a layered structure, consisting of InO2 −1-(In-O layer) interleaved with M/ZnmOm−l 1+ (M/Zn-O layer). The space group is assigned to be R3m when m is an odd number, while it is P63/mmc when m is an even number. The distribution of M atoms within the M/Zn-O layers is considered to be random. However, from electron microscopy study, the existence of the modulated structures showing non-integral periodicities has been observed. The high spatial resolution EDS analysis using 0.5 nm electron probe diameter under a 300kV FE-TEM showed that the sinusoidal modulated structure is caused by the ordering of M atoms within the M/Zn-O layers. In the present study, modulated structures of InMO3(ZnO)13, where M atoms consists of two metals such as In and Fe, Ga, Al and Fe are studied by combined use of HRTEM and high spatial resolution EDS analysis using a 300kV FE-TEM.
Electron Spectroscopic Imaging and Diffraction: Ideal Tools for the Characterization of Ceramic Materials
Authors: Mayer J , Plitzko J , Marien J , Krämer S , Gemming T 
Published: July 2020

Abstract
The most widely spread application of energy filtering transmission electron microscopy (EFTEM) is the determination of elemental distributions in analytical investigations. The new EFTEM techniques are based on data acquisition by electron spectroscopic imaging (ESI), which offers the advantage of fast two-dimensional recording of the inner-shell loss intensities. In a more general framework, the new ESI methods and the standard PEELS technique both aim at exploring the same three dimensional data space. This data space is represented by the spatial coordinates x, y and the energy loss ΔE and the resulting intensity distribution I(x,y,ΔE) is the quantity which is evaluated. It is intuitively clear, that acquiring more than just three consecutive ESI images gives us the possibility to get quantitative information about the spectra and the shape of the ionization edge. The information on the EEL spectrum can be extracted from a series of ESI images for each individual pixel or, by integrating over corresponding pixels, for a given image area and can be quantified by applying standard EELS quantification techniques.
Local Density Information From Low Energy-Loss Peels Measurements
Authors: C. Bell David , L. Mired Clark , W. Hobbs Linn 
Published: July 2020

Abstract
It is known that radiation produces microscopic and macroscopic changes in silicas and other silicate glasses that result in densifications of several percent [1], This change in density is matched by a corresponding linear change in refractive index via the Lorentz-Lorenz relation such that where R is the molar polarizablilty, V the molar volume and n the refractive index.- Measurements of neutron irradiated bulk a-Si02 yield an exact correlation between the refractive index and density as shown by Fig. 1 such that dn/dp =185 m3/kg [ 1 ].
Utilizing a VG HB603 STEM fitted with a parallel EELS, measurement of irradiation-induced density changes in silicas were attempted using the 0-100 eV low-loss region of the electron energy-loss spectrum. The dielectric function and refractive index changes were extracted from these data using a modified Kramers-Kronig analysis (Fig. 2).
The Study of Grain Boundaries in Ag-Sheathed Bscco Tapes by Scanning Transmission Electron Microscopy
Authors: Kishida K , Pan Y , Browning ND 
Published: July 2020

Abstract
Highly textured (Bi,Pb)2Sr2Ca2Cu3O10(Bi-2223)/Ag composite tapes have received considerable attention as high-Tc superconducting materials for electric power and high-magnetic-field applications because of their relatively high-critical current densities and their flexibility. In order to improve the performance of these tapes for many commercial applications, it is essential that the mechanisms that limit the critical current density are fully understood. Previous microscopical studies of these tapes have revealed that interfaces such as grain boundaries strongly influence the transport of large currents1. From a morphological point of view, several models have been proposed to describe potential current transport mechanisms. However, as these models consider mainly the large-scale configuration of the boundaries, the underlying mechanism controlling the properties is still unclear. In order to elucidate the exact role of grain boundaries, systematical studies on the effect of the atomic structure as well as any chemistry change that occurs at the interface are required.
Growth and Texture of Polycrystalline SIC on Graphite During Forced flow Thermal Gradient Chemical Vapor Infiltration (FCVI)
Authors: Appiah KA , Wang ZL , Lackey WJ 
Published: July 2020

Abstract
Silicon carbide is a versatile material possessing properties such as a wide energy bandgap, high thermal conductivity, high elastic modulus and high-temperature creep resistance, which enable it to be used in a variety of electronic, optical and structural applications. Chemical vapor infiltration/deposition (CVI/CVD) coupled with the application of a temperature gradient and forced flow of reagents is particularly suited to the production of SiC structural composites due to the benefits of reduced infiltration time and uniform composite density. In this work, the growth and orientation of polycrystalline SiC on graphite during CVI is investigated using TEM and HRTEM.
The composites studied possess a laminated matrix of alternating layers of carbon and SiC which were deposited by alternating the reagent streams from one layer to the next. Specimens for TEM examination were obtained by cutting ∽1 mm thickness slices from the bulk sample with a low speed diamond saw.
Migration of Silicate Liquid Out of Grain Boundaries in Ceramics
Authors: Ravishankar N , Barry Carter C 
Published: July 2020

Abstract
Liquid-Phase Sintering (LPS) is a conventional fabrication route for the densification of alumina and other ceramics. The polycrystalline ceramics processed by LPS contain siliceous phases along the grain boundaries. This wetting of the grain boundaries has a strong dependence on the crystallography of the boundary. The liquid preferentially wets certain orientations while some special boundaries are ‘dry’. The mechanism of dewetting of these boundaries is not well understood. Several approaches have been adopted to study the nature of the liquid-solid interaction at the grain boundaries. In commercial alumina, anorthite is the most commonly found intergranular phase.
Basal twist boundaries in alumina which contain a thin layer of anorthite glass have been investigated in the present study. Pulsed laser deposition has been used to deposit thin films of anorthite glass on optically flat basal sapphire. The substrate-film assembly is then bonded to an optically polished basal sapphire by sintering the assembly at 1650°C for 2h.
Second Difference Electron Energy-Loss Spectroscopy with the Gatan Imaging Filter
Authors: Buck EC 
Published: July 2020

Abstract
The large number of minor elements present in geological specimens and nuclear waste materials, can make TEM/EDS analysis of such samples troublesome. With a parallel detector such as the Gatan PEELS 666, the second difference technique has been shown to be effective at removing the channel-to-channel gain variation [1]. As spectroscopy performed with the Gatan Imaging Filter (GIF200) averages over a 2D array, gain variations are minimal; however, the second-difference technique selectively enhances the high frequency features such as the “white line” absorption edges, particularly of rare earth elements (REE) and transuranics (TRU). The second difference method may thus still have merit with the GIF200. A script was created within the controlling software program (DigitalMicrograph ™) which permitted second difference acquisition [2]. The Spectroscopy Package was also modified with ResEdit and the required values were added to the Global Tags to enable easy application of the second difference routine.
Analytical Electron Microscopy Investigation of Coated 3M Nextel 720™ Fibers
Authors: Nagarajan R , Fox AG , Boakye E , Hay RS 
Published: July 2020

Abstract
An oxidation resistant interfacial layer between the fiber and the matrix is important for prolonged use of ceramic-matrix composites (CMC). The interface layer has to be chemically compatible and stable in high temperature oxidizing environments. At present various oxide based interface layers in CMC are being considered. One candidate is porous interfaces. Zircon has good thermomechanical stability with SiC and mullite, and resists pore coarsening, so it is of interest as a porous interface materials.
Ethanolic zirconia and silica precursors, complexed with polyelectrolytes to form fugitive carbon for porosity were doped with vanadium. These were used to continuously coat the 3M Nextel 720™ alumina-mullite fibers. These fibers were heat-treated in-line in argon at 1000-1300°C, with the aim of finding heat-treatment conditions that would convert the zirconia, silica, and polyelectrolyte into a fine mechanical mixture of zircon and carbon.
TEM Study of Nanocrystalline Ni Films Grown by Dc Magnetron Sputtering
Authors: Mitra R , Chiou WA , Weertman JR , Hoffman R 
Published: July 2020

Abstract
Nanocrystalline bulk Ni processed by inert gas condensation of powders followed by compaction has shown impressive mechanical properties with strength values as high as 50% of the theoretical shear strength. However, the process of warm compaction required for densification often leads to grain growth, and flaws in the microstructure. In this study, thin films of nanocrystalline Ni were processed by magnetron sputtering to bypass the compaction process and achieve a microstructure with very narrow grain size distribution. This paper presents the grain size distribution and other microstructural features of nanocrystalline Ni films.
Ni films were grown on Si and NaCl substrates, using argon plasma generated with the help of a plasma d.c. magnetron source equipped with a Ni target of 99.99% purity. The target power used was 200 W and the argon pressure was maintained at around 6 millitorr during deposition. A pulsed dc negative bias of 0 or 100 V was applied on the Si substrate.
Effect of Pre- And Post-Deposition Heat Treatment on Microstructure and Electrical Properties of ITO Films Deposited on Pet and Glass Substrates
Authors: Dolukhanyan T , Kwon JG , Moon SC , Kang MG , Sung C 
Published: July 2020

Abstract
ITO films on PET in combination with ITO films on glass substrates are extensively used in Touch Panel Displays fabrication. Main properties of interest for these systems are high optical transmittance ∽95%, low resistivity ∽10−3 Ωcm, coupled with uniform and stable sheet resistivity demanded for long term use.
The goal of this investigation is to understand relationship between microstructure and electrical/optical properties of ITO films on PET and glass substrates as a function of pre- and postdeposition annealing parameters.
ITO films of ∽60 nm thick have been deposited by radiofrequency magnetron sputtering. This method can be applied over a wide range of substrate temperatures. This is essential for plastic substrates such as PET. Regions of good and poor conductivity have been identified for TEM analysis and Analytical Electron Microscope (Philips 400 EM), equipped with light element Noran Instrument Energy Dispersive X-ray Spectrometer (EDXS) have been utilized.
TEM And IR Reflectance Studies on Phase Transitions in Thin VOx Films.
Authors: Verheijen MA , Boonekamp EP 
Published: July 2020

Abstract
Vanadium dioxide (VO2 ) exhibits a reversible semiconductor-to-metal phase transition around 341 K. The low temperature monoclinic P21 /c structure transforms into the tetragonal P42 /mnm rutile structure. The associated sharp changes in optical and electrical properties are used in various thin film switching devices. The present paper describes a study on the optical and structural changes during the synthesis of VO2 thin films using Infra-Red (IR) reflectance spectroscopy and Transmission Electron Microscopy (TEM).
The synthesis was derived from a sol-gel process by Guzman et al. Solutions of vanadyl isopropoxide (VO(OC3 H7)3 ) in n-propanol were spin-coated on a Si wafer provided with 300 nm thermal oxide. Subsequently, the wafer was transferred to an oven and heated to 773 K in a reducing H2/N2 atmosphere using a heating rate of 5 K/min. After a variable time (Δt) at 773 K, the samples were cooled down to room temperature.
Figure 1 shows the IR reflectance of thin (∽50 nm) VOx films on oxidised Si at λ,=3 μm and an angle of incidence ϕ of 30°.
TEM Examination on the Microstructure Rearrangement of ECRPVECD Nc-Si Thin Films Caused By Low Temperature Annealing
Authors: Cheng SC , Kalkan AK , Bae SH , Fonash SJ 
Published: July 2020

Abstract
In an earlier report we have shown that the infrared photoluminescence (PL) from nanocrystalline Si films shifts to lower energies with increasing deposition temperature (in the range of 180-340 °C) and with thermal annealing. These films were deposited on Corning 1737 glass substrates using a Plasma-Therm SLR 770 ECR-PECVD system to a thickness of 4500 Å. The redshift of PL correlates well with the narrowing of (111) XRD peak, the redshift of the optical absoiption profile, the increasing conductivity and the decreasing activation energy for conductivity. Therefore, the energy shift of the PL has been considered as the result of variations in bandgap due to variations in crystallite size; i.e., variations in the quantum confinement. For the samples investigated, the PL band peak was found within the extrema of 0.99 to 0.81 eV (at 77 K). These extreme values correspond to the film deposited at 180 °C (0.99 eV PL) and the same film annealed at 600 °C for 72 hours (0.81 eV PL).
Transmission Electron Microscopy of Corrosion of Stainless Steel-Zirconium Metal Waste Forms
Authors: Luo JS , Abraham DP 
Published: July 2020

Abstract
Stainless steel-zirconium (SS-Zr) alloys have been developed as waste forms to immobilize and retain fission products generated during the electrometallurgical treatment of spent nuclear fuel. The baseline waste form is a stainless steel-15 wt.% zirconium (SS-15Zr) alloy, which is prepared by melting appropriate amount of Type 316 stainless steel (SS316) and high purity zirconium. As zirconium has very low solubility in iron, the addition of zirconium to SS316 results in the formation of ZrFe2 -type Laves intermetallic phases. The corrosion behavior of stainless steel has been widely studied; however, the corrosion behavior of the Zr-based-intermetallic has not been previously investigated. In this paper, we present a microstructural characterization of the corrosion layer formed on the Zr-intermetallic phase using energy-filtering transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS).
Specimens of SS-15Zr alloy, crushed to 75 to 150 μm sizes, were immersed in 90°C deionized water for a period of two years.
Microstructure of off-Eutectic Nanoscale Pb-Cd Inclusions in Al
Authors: Peters DP , Johnson E , Touboltsev VS , Johansen A , Sarholt L 
Published: July 2020

Abstract
Much work has been devoted to TEM studies of nanoscale precipitates consisting of non-soluble elements in Al, as the Al matrix acts as a unique crucible enabling the study of melting/ solidification and crystal phase transformations at a nanometer scale. Recently, this work has been extended to include the ternary system of Al-Pb-Cd. This system is of particular interest, as both Pb and Cd display a large liquid miscibility gap with Al, but together they form a eutectic system. Bimetallic inclusions consist of an fcc Pb and an hcp Cd segment, joined along an internal interface parallel to the {111}Al planes. In this work, the microstructure and composition of off-eutectic Pb-Cd inclusions are studied. Polycrystalline Al samples were implanted with 1 x 1020 ions/m2 (∼3 at.%) with a Cd:Pb ratio of either 8:2 or 2:8, at temperatures to form inclusions in the 10 nm size range.
SIMS/AEM Characterization of Banded Microstructures in an Ni-Cr-Fe Alloy
Authors: Burke MG , Hyatt BZ , McMahon G 
Published: July 2020

Abstract
Ni-Cr-Fe alloys such as Alloy 600 and Alloy 690 are single phase fee alloys with excellent resistance to corrosion. Alloy 600 is generally used in a thermally-treated condition which is characterized by the intergranular precipitation of Cr-rich M7C3 and, depending upon the aging temperature, Cr-rich M23C6. These alloys are usually cast and processed by rolling or forging. These alloys can exhibit microstructures in which there are nonuniform distributions of intragranular carbides that appear as bands aligned parallel to the working direction (i.e. longitudinal) of the material. It is also possible for these materials to exhibit duplex grain sizes which can be associated with the banded carbide structure. Banded microstructures can become more prominent after further anneals. The resistance of the carbide bands to dissolution during solution annealing at temperatures up to 1150°C has prompted the further evaluation of banding in Alloy 600, specifically in terms of identifying those elements associated with the carbide bands.
Estimation of Interfacial Energies Based on the Shapes of Coherent Intragranular Precipitates
Authors: Chen Xiao , Rabenberg L 
Published: July 2020

Abstract
In a study of the precipitation and aging of Invar particles in Cu, we observed that the particles evolved from spherical to cuboidal as they grew in size. This behavior has been observed in other systems, and predicted by Voorhees et al. ; they showed that the precise shape of the particle is a balance between elastic anisotropy and surface energy. The correlation between our results and their predictions are very good. It is the purpose of this note to point out that simultaneous measurements of size, shape, and mismatch of a coherent particle can be used to estimate the interfacial energy under favorable conditions.
Ternary alloys consisting of Cu - 12.8 wt% Ni -7.2 wt% Fe were arc-melted, held at 1030°C to develop extended regions of the Cu-rich solid solution, quenched, then aged at various times and temperatures to develop FCC precipitates near the Invar composition in the FCC Cu matrix.
Characterization of Interfacial Microstructure in Joints Between Pb-Sn Eutectic Solder and Pd/Ni/Pd-Ni/Ni/Cu Metallization
Authors: Ghosh G 
Published: July 2020

Abstract
In electronic packaging, it is very important to understand and control the interfacial microstructure formed due to the reaction between the metallization scheme and solders. Often, the interfacial reaction is exploited/controlled to obtain an optimum properties of the joints. The strength and interfacial properties of the solder joints are determined by the interfacial microstructure. The evolution of interfacial microstructure in solder joints is governed by the diffusion path during processing and in service. Even though the semiconductor industry uses a wide variety of complex metallization schemes, recently the Pd-Ni metallization scheme on Cu has gained a lot of interest. Furthermore, the design of new metallization scheme(s) to control the interfacial microstructure and to improve the quality of solder joints is the cornerstone of advanced electronic packaging. We have carried out a systematic study of diffusion and interfacial reaction, both in the liquid and solid states, between Pb-Sn eutectic solder and the Pd-Ni metallization scheme on Cu.