bluuebunny/crossref_metadata_2025_split huggingface dataset:
Investigation of Bond-Pad Related Inter-Metal Dielectric Crack
Authors: Song Z. G. , Tun T. , Oh C. K. , Redkar S. , Er B.H. , Soo C. P. , Goo C. H. 
Published: December 2020

Abstract
Bond-pad is an important structure of a microelectronic device because it plays the role of enabling the device to communicate with other external devices. Its integrity directly affects the performance of the microelectronic device. This paper presents our investigation on bond-pad Inter-Metal Dielectric (IMD) crack issue. Our investigation has considered the following factors: top via pattern (sea of vias/without vias) for bond-pad, top metal thickness (8 kÅ /9 kÅ /10 kÅ) and probe overdrive force (30 um/50 um/70 um). The bond-pad IMD cracks were exposed and decorated by chemicals (Aqua Regia and Hydrochloric acid), and inspected by an optical microscope. A scoring system was designed to assess the dependence of the bond-pad IMD crack severity on the above-mentioned factors. The investigation results showed that the IMD crack severity is strongly dependent on the probe overdrive force, top via pattern, and only slightly on top metal thickness.
Enhanced SEM Doping Contrast
Authors: Lin C.Y. , Lee J. H. 
Published: December 2020

Abstract
Scanning electron beams provide a superior method of failure analysis by observing the voltage contrast (VC) both in frontend and back-end processes. Back-end VC tells us both metal/via open/short issues. Front-end VC tells us not only open/short issue but also additional doping information. A case on the application of passive voltage contrast (PVC) on doping information was studied. This paper explains the mechanism producing passive voltage contrast and describes three methods of sample preparation and provides examples of the results achieved.
Interconnect and Gate Level Delayering Techniques for Cu/Low k Technology Failure Analysis
Authors: Wu Huixian , Cargo James , Dutt Barry , Bucha Tony , Serpiello Joe 
Published: December 2020

Abstract
In this paper, Failure Analysis (FA) challenges, reliability issues, and new failure modes for copper technology will be presented. Deprocessing techniques for copper technology have been developed and will be discussed. Front side and backside FA deprocessing techniques for copper layers and low k inter-level dielectric (ILD) layers including: reactive ion etching (RIE), parallel polishing, chemical mechanical polishing (CMP) and a combination of these techniques will be discussed. In addition, novel gate level deprocessing techniques will be presented.
Electrical Failure Analysis and Characterization of Leakage Paths Leading to Single Cell Failures in 128Mbit SDRAMs
Authors: Versen M. , Schramm A. 
Published: December 2020

Abstract
A common failure signature in dynamic random access memories (DRAMs) is the single cell failure. The charge is lost and thereby the information stored in trench capacitors can be destroyed by high resistive leakage paths. The nature of the leakage path determines the properties of the failure such as temperature-, voltage- and timing-dependencies and its stability. In this study, high resistive leakage paths were investigated and delimited from classical shorts by estimating the order of magnitude of the leakage current and by comparison to a simple resistive leakage path. Such an investigation is the basis for a defect-based test approach that leads to multiparameter tests [1]. An introduction to the problem is given in the first section, while the second section deals with the characterization of the defects in two case studies. A short summary is given in the end.
FIB Micro-Pillar Sampling of Si Devices and its 3D Observation
Authors: Yaguchi T. , Kamino T. , Ohnishi T. , Hashimoto T. , Umemura K. , Asayama K. 
Published: December 2020

Abstract
A novel technique for three-dimensional structural and elemental analyses using a dedicated focused ion beam (FIB) and scanning transmission electron microscope (STEM) has been developed. The system employs an FIB-STEM compatible sample holder with sample stage rotation mechanism. A piece of sample (micro sample) is extracted from the area to be characterized by the micro-sampling technique [1-3]. The micro sample is then transferred onto the tip of the stage (needle stage) and bonded by FIB assisted metal deposition. STEM observation of the micro sample is carried out after trimming the sample into a micro-pillar 2-5 micron squared in cross-section and 10 -15 micron in length (micro-pillar sample). High angle annular dark field (HAADF) STEM, bright field STEM and secondary electron microscopy (SEM) images are obtained at 200kV resulting in threedimensional and cross sectional representations of the microsample. The geometry of the sample and the needle stage allows observation of the sample from all directions. The specific site can be located for further FIB milling whenever it is required. Since the operator can choose materials for the needle stage, the geometry of the original specimen is not a limiting factor for quantitative energy dispersive X-ray (EDX) analysis.
Failure Analysis of Vertical Cavity Surface Emission Laser Diodes
Authors: Siegelin F. , Brillert C. 
Published: December 2020

Abstract
A failure analysis case study for oxide confined vertical cavity surface emitting laser (VCSEL) arrays will be presented. The focus of this work is on devices failing with a reduced optical output due to a rapid degradation of the laser diode. The complete analysis flow will be shown, including electrical and optical characterization as well as detailed investigations on a nanometer scale. It is known that these fails are caused by dislocations. An advanced FIB preparation method enabled cross-section and plan view TEM to successfully visualize the complete extent of a dislocation network.
Stacked-Die Failure Mechanisms for an Octal, Current Input 20-Bit Analog-to-Digital Converter
Authors: Craigin Bob K. , Zhou Bin Ling , Bridgmon Jason R. 
Published: December 2020

Abstract
Stacked-die packaging was used to make an octal 20-bit analog-to-digital (A/D) converter by stacking two quad A/D converter die in a single 48-lead QFN (quad flat-pack, no leads) package. Reliability testing for product qualification initially failed only (biased) HAST test. Two failure mechanisms were identified. The first mechanism was silver ion migration at sensitive analog inputs due to high conductive die-attach fillets on the bottom die. The second mechanism was ILD delamination and passivation layer cracking due to spacer-attach stress on the surface of the bottom die. Electrical failure analysis was aided by a self test mode designed into the quad A/D converter. Package opening and other standard failure analysis techniques required some modification to accommodate the stacked-die package. This work points to critical stacked-die assembly steps, including conductive die-attach and nonconductive spacer-attach application, where effects of moisture, bias, and thermal stress must all be considered.
Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis
Authors: Kerst U. , Sadewater P. , Schlangen R. , Boit C. , Leihkauf R. , Simmnacher B. , Lundquist T. , Le Roy E. 
Published: December 2020

Abstract
The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.
Topside Defect Localization Using OBIRCH Analysis
Authors: Howard Clifford , Weerakoon Anusha , Mitro Diana M. , Glaeser Dawn 
Published: December 2020

Abstract
OBIRCH analysis is a useful technique for defect localization not only for parametric failures, but also for functional analysis. However, OBIRCH results do not always identify the exact defect location. OBIRCH analysis results must be used in conjunction with other analysis tools and techniques to successfully identify defect locations.
Edge Enhancement for Acoustic Microscopy of Flip Chip Devices
Authors: Sullivan Daniel J. D. , Komrowski Andrew J. , Curiel Luis A. , Tan Kevan V. 
Published: December 2020

Abstract
Scanning acoustic microscopy (SAM) is a non-destructive tool for analysis of packaged devices. New materials, package configurations, and technologies have required adaptation of standard practices in SAM. The detection of cracked die, voids, or delamination in the underfill or package are standard issues for SAM. SAM can routinely detect large cracks through the central 80% of the die; however, the occurrence of smaller cracks at the edge of the flip chip die is problematic. This article proposes a model in which alteration in the standard SAM parameters, the gain and Time-of-Flight, enable detection of die edge cracks in assembled Flip Chip devices. IR imaging after thinning and polishing of the die confirms the die edge cracks. The SAM analysis can replace the IR imaging for detection of small die edge cracks taking minutes to complete instead of the hours involved in the sample preparation for IR imaging.
Couple Passive Voltage Contrast with Scanning Probe Microscope to Identify Invisible Implant Issue
Authors: Shen Cha-Ming , Lin Shi-Chen , Huang Chen-May , Lin Huay-Xan , Wang Chi-Hong 
Published: December 2020

Abstract
This paper presents a judicious reasoning method by coupling passive voltage contrast (PVC) with scanning probe microscopy (SPM) for revealing particular invisible defect modes, which were imperceptible to observe and very difficult to identify by means of traditional physical failure analysis techniques. In order to certify this compound method, it is applied to an implant issue as a case study. Through solving this particular defect mode, whose exact failure position could not be determined even with the most sensitive PVC or high-resolution SPM current mapping, the procedures and contentions are illustrated further. The significance of the reasoning method is based on electrical characterization and differential analysis. By coupling PVC with SPM, the capability to identify tiny defects is not limited to just distinguishing leakage or high-resistance under contacts. PVC can detect abnormal N+ contacts due to improper implanting, and SPM can provide the precise electrical characteristics.
CAD - Less Blind Navigation in Focused Ion Beam System
Authors: Ray Valery , Gerlinsky Chris 
Published: December 2020

Abstract
Traditional approaches to navigation in focused ion beam (FIB) circuit edit include blind CAD navigation based on GDSII data from the manufacturer and navigation assisted by the in-situ optical microscope (OM). These approaches are difficult to apply in security audit and reverse engineering fields, where CAD data are unavailable and objects of interest are either too small, or located in an array that is too dense for imaging by in-situ OM. To address this issue, this article presents a methodology which is based on establishing a chip-specific system of coordinates and determination of precise locations of the objects of interest within the device. The work was performed on a Vectra 986 FIB system from FEI Company and a proprietary system for optical scanning of semiconductor devices. Auxiliary techniques allowing enhancement of navigational accuracy, developed for this application, are equally applicable to the general navigation procedures during generic FIB circuit modification.
EEPROM Failure Analysis Methodology : Can Programmed Charges be Measured Directly by Electrical Techniques of Scanning Probe Microscopy (SPM)?
Authors: De Nardi Christophe , Desplats Romain , Perdu Philippe , Beaudoin Félix , Gauffier Jean Luc 
Published: December 2020

Abstract
A method to measure “on site” programmed charges in EEPROM devices is presented. Electrical Scanning Probe Microscopy (SPM) based techniques such as Electric Force Microscopy (EFM) and Scanning Kelvin Probe Microscopy (SKPM) are used to directly probe floating gate potentials. Both preparation and probing methods are discussed. Sample preparation to access floating gate/oxide interfaces at a few nanometers distance without discharging the gate proves to be the key problem, more than the probing technique itself. Applications are demonstrated on 128 kbit EEPROMs from ST Microelectronics and 64 kbit EEPROMs from Atmel.
Investigation of Passivation Damage from the Backside
Authors: Subramanian Sam , Widener Ed , Chrastecky Tony , Jones Darryl , Jones Bill W. , Mulder Randal 
Published: December 2020

Abstract
Passivation damage, a common failure mode in microelectronics circuitry, can be easily identified by optical inspection in the form of a local 'discoloration' after exposing the die to a chemical that would penetrate through the crack and attacks metal lines. Unfortunately, this process destroys evidence of what damaged the passivation, since it attacks the damaged region. As a result, in many cases, the mechanism by which the passivation damage occurred is unclear. This problem is addressed in this paper by a procedure to examine passivation damage by transmission electron microscopy (TEM) of a cross-section sample prepared from the backside and without exposing the die from the top side. The backside approach was successfully used to assign the root cause of the passivation damage to packaging process. A topside approach to characterize the passivation damaged region can result in destruction of evidence at the defect location.
3-D Defect Characterization using Plan View and Cross-Sectional TEM/STEM Analysis
Authors: Stark Terrence J. , Russell Phillip E. , Nevers Corey 
Published: December 2020

Abstract
The primary objectives of failure analysis on structurally complex semiconductor devices are often to determine a defect's location and composition. Determining exactly how these defects propagate through a sample in three dimensions, to confirm a failure mode, is often elusive. This paper discusses characterizations of two defect types to illustrate a technique of sequentially imaging whisker type defects from orthogonal orientations using TEM/STEM. The first type is a high resistance short between two metal lines that is best imaged using STEM in order to observe subtle differences in material composition. The second is a crystalline dislocation through an optoelectronic device that is best observed using TEM. Details of resistive short characterization and crystalline defect characterization performed are provided. TEM/STEM has shown to be a practical tool for locating defects prior to cross sectional analysis. This allows defects to be located and characterized in three dimensions.
In-Line Voltage Contrast Inspection of Ungrounded Chain Test Structures for Timely and Detailed Characterization of Contact and Via Yield Loss
Authors: Patterson Oliver D. , Wildman Horatio , Ache Alex , Wu Kevin T. 
Published: December 2020

Abstract
This paper shows that in-line voltage contrast inspection can be used to monitor and debug mechanisms causing via and contact opens using ungrounded chain test structures. This opens up a large number of new opportunities to the benefits of in-line VC inspection. A theory explaining the VC appearance of a broken chain is proposed and experimentally verified. The methodology used at IBM’s 300mm fab to apply this phenomenon is described along with some use cases.
Methodology of Optimum-kV BSE Application in SEM and Summary of Characteristic for Low Energy SEM/EDS/FIB
Authors: Lai Li-Lung 
Published: December 2020

Abstract
Advantages of low energy e-beam & i-beam in the operation and applications of SEM/FIB/EDS are presented. Further advantages of Backscattered Electron in SEM are stressed in the paper. However, since the “low energy” limit of zero is impractical, limiting factors and optimum operation conditions will be discussed. The article also investigates practical challenges associated with low energy beams in real situations.
A Fast and Inexpensive Product Screening Method for R.O.H.S. Compliance
Authors: Mazurkiewicz Paul 
Published: December 2020

Abstract
The Directive 2002/95/EC (referred as ROHS) of the European Parliament and of the Council restricts the use of certain hazardous substances in electrical and electronic equipment. This article reports on a fast and inexpensive methodology for rapidly screening entire electronic assemblies that acts as a high-level screen for obvious ROHS violations. Using this methodology, this lab has been able to check entire product lines for basic ROHS compliance and has identified many cases where vendors needed to be informed of ROHS violations before a product could be certified as ROHS compliant. Four tests are employed. Each of them is described, along with the basic theory behind the test: pre-screening with x-ray fluorescence spectroscopy and electron dispersion spectroscopy; detection and identification of polybrominated biphenyl ethers using gas chromatography - mass spectrometry; and chromium 6 colorimetric testing based on diphenylcarbazide.
System Failures Due to Contamination Outgassing
Authors: Nailos Mary Ann , Stein Dan , Hernandez Victor G. 
Published: December 2020

Abstract
Contamination out gassing is the release of volatile compounds from a solid or liquid, often with the addition of heat. These compounds may condense as thin films on surfaces and cause oxidation, corrosion or contact resistance. Out gassing is more likely to be problematic in system environments in which the temperature is elevated and available oxygen is limited. Moisture in the environment may also be a contributing factor. The paper includes an investigation of three case studies of different types of contamination out gassing that led to system failures. The analytical tools and methods used to determine root cause will be discussed in each case. The first case study examines bridging conductive copper dendrites on a system cable used in a PC system related to the cable shipping materials. The second failure to be discussed is the corrosion of Ag conductor traces in a display panel due to out gassing of sulfur compounds from nearby foam cushioning pads. The third case will explore a DC motor failure due to siloxane out gassing from an adjacent foam pad. Prevention of out gassing can be controlled by material selection and supply chain management. There are also standard test methods that can be used to detect out gassing in suspect material. These methods can be used in conjunction with the specification as requirements for qualification of new materials. Two ASTM test methods, ASTM E-595-77/84 and ASTM E1559-03 pertain to contamination out gassing. This paper includes a discussion of both methods and their advantages and disadvantages as part of a test plan.
ESTIMATION OF EFFICIENCY OF VARIOUS SCHEMES OF THERAPY OF PATIENTS WITH INFECTIOUS MONONUCLEOSIS CAUSED BY EPSTEIN – BARR
Authors: Yurko K. V. , Kozko V. M. , Merkulova N. F. , Моhylenets О. I. 
Published: December 2020

Background: Actuality of study of infectious mononucleosis (ІМ) is conditioned by high infected of population by the Epstein – Barr virus (EBV), specific virus affinity to the immunocompetent cells, lifelong virus persistence in an organism and often latent process. Methods: Research on the work topic was conducted at the Department of Infectious Diseases of Kharkiv National Medical University. A total of 45 patients with IM (26 men and 19 women) who were hospitalized at the Regional Clinical Hospital in 2018–2019 years were surveyed. The vast majority of patients with IM were young people aged from 18 to 25, of whom 597 % were students. Results: The clinical picture of infectious mononucleosis caused by the Epstein–Barr virus, mainly characterized by manifestations of hepatomegaly, lymphadenopathy, intoxication syndrome and nasopharyngeal tonsillitis. The efficacy of combined use of Valacyclovir and Nuclex in complex therapy of patients with infectious mononucleosis caused by Epstein – Barr virus (EBV) was studied. The use of such therapy was found to promotes regression of clinical symptoms, contribute to normalization of indices of clinical blood tests and lead to a decrease of the number of EVB's DNA copies in the blood serum or complete elimination of virus. Conclusions: Thus, evaluation of the effectiveness of the use of valacyclovir and nuclex in the complex therapy of patients with infectious mononucleosis caused by Epstein–Barr virus, indicates a more significant regression of clinical symptoms, significantly more pronounced positive impact on the indicators of clinical blood analysis and the number of copies of EBV DNA in blood serum than in the comparison group. Obtained results allowed to substantiate the use of complex therapy of valacyclovir and nuclex in patients with IM caused by EBV.
تطوير الوسيلة التعليمية بنظام الإنجليزية بدون صعوبة باستخدام تطبيق أندرويد لمهارة الكلام
Authors: Asror Robby Arinil , Thahir Halil , Huda Mokhammad Miftakhul 
Published: December 2020

أهداف هذا البحث لإنتاج الوسيلة التعليمية بنظام الإنجليزية بدون صعوبة باستخدام تطبيق أندرويد لترقية مهارة الكلام فى اللغة العربية، ولمعرفة تصحيح المنتج و لمعرفة نموذح التعلم المناسب لتطبيق المنتج. ويستخدم هذا البحث بنموذج التطوير من ديك وكاري. المنتج المطور هو تطبيق أندرويد يسمى بــــ"سهلة"، فيه ثلاثة موضوعات وهي: الأسرة، و التعارف، و بيتي. و لكل موضوع أربعة مكونات على الأقل، منها النص و الفىديو و القصة القصيرة والمفردات. نتيجة تصحيح المنتج تدل على أن النتيجة من خبير المادة هي 80.5% فى فئة جيدة و النتيجة من خبير الوسيلة هي 86.1% فى فئة جيدة أيضا، و النتيجة من الاختبار الميداني من المعلم هي 85% و من الطلاب 83.3% فى فئة جيدة أيضا. أما نموذج التعلم المناسب لتطبيق المنتج المطور هو التعلم بأسلوب المستقل.
CONSENSUS ALGORITHMS BASED BLOCKCHAIN OF THINGS FOR DISTRIBUTED HEALTHCARE
Authors: Al-Joboury Istabraq M. , Al-Hemiary Emad H. 
Published: December 2020

Internet of Things (IoT) consists of smart Things with evolution of ubiquitous computing. Fog Computing (FC) processes and analyzes data of these sensors near to users. However, the ever-increasing in number of Things and the consequent explosion in data traffic have led to fail traditional solutions of centralized storage. Blockchain is a new technology developed as a shared ledger build around peer-to-peer network to produce unchangeable blocks that contain multiple data. These blocks are linked to previous ones in sequence called chain through hash functions. Participants in blockchain selects a leader through one of consensus algorithms who adds new blocks in the chain to prevent dishonest nodes from creating invalid blocks. In this paper, we propose IoT based blockchain architecture named blockchain of Things to store medical records in a distributed manner. The architecture is emulated on Fog server Linux-based using Node.js and Postman. Three consensus protocols, namely: Proof of Work (PoW), Proof of Stake (PoS), and Byzantine Fault Tolerance (PBFT) are emulated and communicated using WebSocket. The consensus algorithms are evaluated in terms of CPU utilization and memory usage. The results show that PoS compared to PoW and PBFT is more lightweight and beneficial to IoT application.