bluuebunny/crossref_metadata_2025_split huggingface dataset:
Contacting of Fabric-Based Current Collectors for Lithium-Ion Batteries
Authors: Ingendoh Benedict 
Published: December 2024

Electrical energy storage systems play a decisive role in the success of the global energy transition. On the one hand, they are indispensable stationary storage systems in combination with renewable energies and, on the other, they are a basic prerequisite for the acceptance of electromobility. The driving goals in battery development include increasing the range of electric vehicles and reducing the cost of energy storage systems. This goes hand in hand with increasing the storage density and improving the service life and cycle stability of batteries. At the same time, it is very important to minimize the consumption of scarce or expensive materials and production costs. In line with these objectives, all battery components and production processes need to be further developed.
Currently, copper and aluminum foils are used as current collectors in battery production. A promising approach to improving the quality and efficiency of batteries is the use of fabric-based current collectors. The substitution of metal foils with metallized fabrics leads to a considerable reduction in weight and thus to an increase in gravimetric energy density. The use of metallized fabrics instead of metal foils also enables a significant reduction in metal consumption. This study focuses on a critical process step for the production of fabric-based current collectors, the contacting process. The most relevant results are presented and discussed to derive conclusions for the production process of electrodes with a fabric-based current collector.
Mechanical Interplay in a Silicon-Graphite Composite Electrode Under High Current Density over Long-Term Operation
Authors: Kim Giyong , Kim Sung Yeol 
Published: December 2024

Silicon-Graphite (Si-Gr) composite electrodes, composed of heterogeneous active materials, combine the high capacity of silicon with the conductivity and stability of graphite. These anodes, known for their excellent electrochemical performance and cycle stability, are gaining attention as potential replacements for graphite electrodes [1]. However, their long-term cycle stability is not as good as graphite's, and the higher the silicon content, the quicker the degradation occurs. Thus, it is necessary to improve this aspect [2]. The primary reason for the degradation of cycle stability in Si-Gr composite electrodes is the repeated growth of the Solid Electrolyte Interphase (SEI) during the cycling process [3]. Initially, the SEI forms around the active material, and as the cycling progresses, it extends over the entire electrode [4, 5]. During this process, the electrochemical performance of the active materials within the electrode decreases, and occasionally recovers. This fluctuation is influenced by the repeated growth of the SEI. When the residual stress inside the electrode exceeds the yield point, electrode cracking occurs. Unintentionally, these cracks shorten the ion transport pathways, which in turn can restore the electrochemical performance [5]. However, this interpretation is based on the observed capacity reduction and changes in electrode structure ex-situ. Therefore, there are inherent limitations in clearly delineating the step-by-step processes that result in internal structural changes and crack formation within the electrode. Additional analysis is required to further investigate these phenomena.
In this study, to understand the internal structural changes of the Si-Gr composite electrode during high-speed, long-term cycling, we monitored the changes in electrode stress states in-situ during 200 cycles at 1C [6]. Additionally, by varying the silicon ratio, we aimed to comprehend the role of each active material over the long term. In Figure 1a, the observed capacity and stress changes in the 6% Si electrode are overlaid values of the two active materials' reactions. To analyze the stress behavior characteristics due to the volumetric behavior of each active material, as shown in Figures 1b and 1c, the capacity and stress were differentiated to distinguish the contributions of each material (dQ/dV, dσ/dV). Additionally, by calculating the differential stress to differential capacity (dσ/dQ), as shown in Figure 1d, we understood the changes in the electrode structure at the reaction point of Silicon (Si1 for Li3.75Si → LixSi). By further analyzing these results and compiling data from different ratios of active materials, we aim to analyze the changes in internal electrode structure and the causes of crack formation in long-term, based on high-speed charging/discharging.

Figure 1
(Invited) Photon-Induced Plasmas and Contamination Control in Semiconductor Industry
Authors: Beckers Job 
Published: December 2024

One of the crucial steps in the fabrication process of computer chips is photolithography. This process uses Extreme Ultraviolet (EUV) photons with a wavelength as short as 13.5 nm, which are transported from their source, via a multitude of multilayer mirrors and the mask (or reticle) to the wafer, which is to be illuminated. As this high energy radiation is absorbed by almost anything, the inside of such a photolithography scanner is designed to be operated under low pressure hydrogen gas.
Everywhere the beam of EUV photons travels, it photo-ionizes the background gas, turning it into a so-called EUV-induced plasma. The resulting plasma is a peculiar one, as it is governed by high transients in the time and space domain.
The inherent presence of an EUV-induced plasma in high-end lithography scanners may have both positive and negative impact on the process in the machine and on its yield, dependent on local conditions and way of operation. For instance, ions – created in the plasma and accelerated to high energies in the space charge region at plasma-surface interfaces - may impact long term stability and lifetime of delicate and expensive optical parts. Also, the plasma inside the scanner may loft contaminating particles and transport them to locations which are extremely vulnerable to such contaminants. Contrary, the chemistry, induced by the plasma, may assist in cleaning the aforementioned optics parts from hydrocarbon contamination. Nevertheless, in order to optimize the overall photolithography process, in-depth understanding and metrology of such plasmas is desired.
This contribution first elaborates on the physics behind the formation and decay processes of this peculiar type of plasma. A general description of the elementary plasma processes is discussed.
Consecutively, some key diagnostics – and their developments over the last years - will be elaborated on. The first set of key diagnostic includes Electrostatic Quadrupole Plasma analysis (EQP) and Retarding Field Energy Analyzer (FREA) for the measurement of ion fluxes and energies, and ion energy distribution functions. The second key diagnostic evolves around the interaction between the induced plasma and standing microwaves and is called Microwave Cavity Resonance Spectroscopy (MCRS). The MCRS technique is based on exciting a standing wave in a cylindrical resonant cavity of which the resonance frequency is a measure for the density of free electrons present in the plasma.
The last part of this contribution reflects on recent work uncovering how the induced plasma affects the long-term release from surfaces of particles that were immobile before plasma operation. Results from plasma exposure measurements using an off-line hydrogen plasma sources indicate a significant morphology of lead and tin based particles.
(Invited) Recent Advances in Oxide-TFT Technology for Next-Generation Sustainable Electronics
Authors: Nomura Kenji 
Published: December 2024

Metal-oxide semiconductors and the relevant electronic devices, particularly thin-film transistor technology are nowadays acknowledged as promising elements for the development of next-generation ubiquitous sustainable electronics. Due to their superior characteristics, such as high electron mobility even in disordered structures, wide-bandgap nature, and low-temperature processability, these technologies offer high-performance, low-power device operation, and cost-effective fabrication processes. A n-channel oxide-TFT using amorphous In-Ga-Zn-O (a-IGZO) channel has already been successfully commercialized as a pixel TFT back-plane in several state-of-art displays such as high-resolution active-matrix flat panel display (AMFPD), large-sized liquid-crystal display (LCD), and high-resolution organic light-emitting display (OLED). Oxide electronics continues to explore new device applications, extending beyond display technologies to areas such as sensors and back-end-of-line (BEOL) transistors, paving the way for next-generation electronics.
Here I present recent advancements of oxide-TFT technology, mainly based on our research activity. Firstly, we will assess the advancements made in n-channel/p-channel oxide thin-film transistor (TFT) technology and address the outstanding challenges that need to be resolved for the development of next-generation electronics. We will also discuss various types of oxide-TFT-based circuit applications, such as NMOS (n-channel metal-oxide semiconductor), PMOS (p-channel metal-oxide semiconductor), and CMOS (complementary metal-oxide semiconductor).
Investigating the Role of Grain Boundaries in Enhancing Bifunctional Memory Properties of CeO2 Thin Films
Authors: Hung Ching-Heng , Chi Chong-Chi , Lu Ming-Pei , Lu Ming-Yen 
Published: December 2024

The rapid expansion of artificial intelligence (AI) has highlighted challenges for traditional von Neumann computing architectures, such as the memory and power limitations posed by complementary metal oxide semiconductor (CMOS) devices. Resistive random-access memory (RRAM) is considered to be an emerging technology for the next generation of non-volatile memory devices due to its simple metal/insulator/metal (MIM) structure, faster write/read speed, and longer retention time. CeO2 with defects is compatible with electrochemical metallization mechanisms make it ideal for use as an active material in memristors.
We conducted the study with CeO2 thin film as the active layer. PVD-CeO2, containing numerous oxygen vacancies, facilitates gradual setting/resetting under low voltage conditions, which enables analog-type switching for applications such as artificial neural synapses. While, after annealing process, grain boundaries within the CeO2 layer serve as migration paths for rapid ion diffusion. When bias is applied to the Ag/CeO2/TiN memristor, electrochemical metallization (ECM) occurs within the CeO2 switching layer, leading to the migration of Ag ions and the formation of stable Ag conductive filaments in the CeO2 layer. Resistive switching allows the realization of typical RRAM devices with stable set/reset switching and an on/off ratio of up to 105. Overall, by varying annealing temperatures and operating voltages, the Ag/CeO2/TiN system can achieve bifunctional functionality.

Figure 1
In Situ Synchrotron Based Soft XAS and Resonant Inelastic X-Ray Scattering (RIXS) Characterizations for ε-Cu0.9V2O5 Oscillator
Authors: Li Jialu , Ponis John , Banerjee Sarbajit , Lee Gihyeok , Zhuo Zengqing , Guo Jinghua 
Published: December 2024

As traditional semiconductor technology nears its limits in terms of energy efficiency and capacity, the imperative to explore new avenues in semiconductor design grows ever more pressing. One promising direction is neuromorphic computing, which holds the potential to provide real-time learning and embedded intelligence capabilities. Among the materials showing promise in this field, vanadium dioxide (VO2) received extensive research interest due to its unique properties, which undergo a reversible transition from a metallic to a semiconductor state at 340 K. The low-entropy resistive-switching behavior, which involves multiple internal states of vanadium, makes VO2 an ideal candidate for neuromorphic applications, poised to drive advancements in next-generation real-time AI. Studies have explored the effects of composition (doping), electric field, temperature, and pressure on the material properties of VO2, including its electronic device performance. However, despite these investigations, the underlying mechanism governing resistance switching for a neuromorphic response and the associated material properties remain ambiguous.
Synchrotron X-ray absorption spectroscopy (XAS) and resonance inelastic X-ray scattering (RIXS) techniques are powerful tools for investigating the element-specific electronic structure of the materials. The techniques within the soft X-ray regime could provide atomic-level insights into transition metal oxides based on core-level excitations of oxygen K-edge and 3d transition metals L-edges. RIXS reveals electron configuration, especially d-orbital configuration and band gap that majorly contribute to the electric conductivity of neuromorphic transition metal oxides.
Here, temperature/electric field dependent in situ sXAS and RIXS, with a homemade sample holder and devices designed to apply bias (electric field), are employed and demonstrated on the single crystal ε-Cu0.9V2O5 oscillator to provide fundamental insight on metal-insulator transition behaviors. This integrated approach to characterization holds considerable promise in advancing our comprehension of neuromorphic materials and establishing connections between target neuronal behavior and material properties.
Analytical Electrochemistry of Nickel and Platinum Electrolytes
Authors: Troche Kyle , Pillars Jamin R. , Garzon Fernando H. 
Published: December 2024

Pt-Ni alloys possess unique catalytic and magnetic properties, and it is highly desirable to synthesize conformal thin films of these materials for integration into magnetic devices and energy conversion systems. Electrodeposition provides large scale and complex form plating without the need for additional equipment such as a vacuum system or furnace used in traditional Pt-Ni synthesis. While nickel and platinum electrodepositions can individually plate effectively, co-deposition provides its own challenges. Large differences in deposition potentials between the two metals and platinum’s reduced overpotential for undesirable hydrogen evolution are necessary challenges that need to be addressed. Investigation into various nickel and platinum bath chemistries over a range of pH’s will help develop a Pt-Ni co-deposition bath that will produce a uniform deposition with desired morphologies.
A rotating disk electrode experiment was conducted on each electrodeposition bath along with a Koutecky-Levich analysis to determine the baths diffusion coefficient and rate constant. Nickel baths include boric acid, acetic acid, citric acid, hydrochloric acid, and phosphoric acid. Platinum baths include hydrochloric acid and acetic acid. Hydrogen suppression techniques were also studied for both nickel and platinum baths to determine the effect on hydrogen generation and metal deposition. Successful suppression of the hydrogen generation reaction would result in greater control of nickel deposition onto platinum as well as thicker platinum films.
Control of Electroplated Copper Layers Microstructure Under Modulated Current: Organic Additives Free Electrolytes
Authors: Dematos Jean , Gigandet Marie-Pierre , Hihn Jean-Yves 
Published: December 2024

The use of organic additives is a common thing to improve the properties of copper layer elaborated from a sulfate plating bath. Especially, levelling effects and brightness intensity can be strongly enhanced. But this practice is not without its disadvantages, with high costs, risks of defects in the supply chain, and health and environmental issues [1]. An interesting alternative consists in the current modulation currently named pulsed currents [2] to replace the use of organic molecules to control the roughness of copper deposits. If several works still exist in this field, their application to plating on rough surfaces (Sa around 2 μm) has not been explored yet and the pulse sequence design requires an exhaustive knowledge of each compound effects. In a previous study [3], the mode of operation of industrial organic additives was defined. The modulated current is mainly used to influence the electrocrystallization mechanism, thereby controlling the mechanical and physical properties of the deposited metal [4]. Since the nucleation rate is proportional to the current density, the use of pulsed and reverse currents can reduce porosity and create deposits with finer grain sizes. This allows them to achieve significantly higher densities than their static counterparts [5]. When the current is interrupted at Toff, the active metal ions diffuse into the electrode, where their concentration decreases due to the deposition process. This process promotes the formation of new and smaller grains [6]. Copper layers microstructure and roughness, can, therefore, be greatly modified under the influence of the deposition overpotential. Moreover, the other pulse current parameters, like pulse frequency, have an effect on the surface roughness.
[1]: https://www.anses.fr/en/content/carcinogenic-mutagenic-and-reprotoxic-substances-cmrs
[2]: P. Leisner, M. Fredenberg and I. Belov, Pulse and pulse reverse plating of copper from acid sulphate solutions, Transactions of the Institute of Metal Finishing, Vol 88 N° 5, 2010.
[3]: J. Dematos, M-P. Gigandet and J-Y. Hihn, Organic Additive Free Copper Plating, Oral Communication, ISE, 74th Annual Meeting, Lyon, France, sept. 2023.
[4]: Green, T. A., Su, X. & Roy, S. Pulse electrodeposition of copper in the presence of a corrosion reaction. J. Electrochem. Soc. 168, 062515 (2021).
[5]: Kim, M. J. et al. Pulse electrodeposition for improving electrical properties of Cu thin film. J. Electrochem. Soc. 157, D564 (2010).
[6]: J.C. Puippe and F. Leaman, Theory and Practice of Pulse Plating, American Electroplaters and Surface Finishers Society, 1986.

Figure 1
Power Modules Assembling By Thermocompression of Copper Layer Obtained by Dynamic Hydrogen Bubble: Elaboration Sequences and Electrical Efficiency
Authors: Janod Goulven , Schoenleber Jonathan , Chachay Lucas , Gigandet Marie-Pierre , Avramovic Vanessa , Hihn Jean-Yves , Avenas Yvan , Daudin Remi , Missiaen Jean-Michel , Bouvard Didier , Khazaka Rabih 
Published: December 2024

Supported by aircraft future developments with the increase in engines electrification, there is a need of extremely high-power converters in the power electric chain, interfacing the electrical network and the electric motors. The COPPERPACK project (COPPER based PACKaging for direct cooled power module ANR-19-CE05-0011) aims to module assembling by thermocompression. This requests the elaboration of thin nanoporous copper films to be placed between chips and metallized ceramic substrates and the faster and simpler way resides in electroforming deposition made by Dynamic Hydrogen Bubble Template (DHBT) [1]. This process works in unusual potentials and current densities where the competition between hydrogen discharge (commonly avoided) and copper reduction is very high. In this case, this method achieves thick deposits in very short time (few seconds) with high currents allowing a very fast growth of copper around hydrogen bubbles which can be driven by several parameters [2].
In the 4 years duration of the project, several elaboration conditions have been tested i.e. various current densities, pulse current sequences, and increase of the current to compensated the increase of the surface induced by the high level of porosity. Functional properties of films were investigated during thermal compression of chips on a copper substrate such as electrical conductivity, mechanical resistance to shear constraints, behavior after ageing etc. The film properties were paralleled with their structures, morphologies, pores, ligaments sizes as well as behavior during deformation.
Surprisingly, the most efficient films were found to be those with the lowest copper densities. Various situations close to the conditions of use are then tested for chips sticking to copper substrate: electroforming to compensate differences in height followed by DHBT, film deposits on clips used to connect two separate tracks (with very small surfaces), full systems composed by assembling of copper foams and complex copper shapes, designed for cooling fluid circulation. All these systems were extensively described and copper layers obtained by DHBT allow to build compact and efficient systems.
[1] Abdel-Karim, R.; El-Raghy, S. Chap 4 in Advanced materials and their applications - micro to nano scale. One Central Press, United Kingdom, pp 69–91, 2017
[2] Shin, H.-C.; Liu, M. Chem. Mater. 2004, 16, 25, 5460–5464 doi.org/10.1021/cm048887b

Figure 1
Suppression Effect of Sn on Irregular Shape Deposition of Zn for Negative Electrode of Large-Scale Energy Storage Devices
Authors: Kunimoto Masahiro , Ono Fumimasa , Komiya Ayumu , Harasawa Sayaka , Homma Takayuki 
Published: December 2024

Zn is one of the promising negative electrode materials for next-generation large-scale energy storage device. This is ascribed to its several advantages: (1) it shows high energy density, (2) aqueous solvent is to be used, which can prevent hazardous accident, or (3) it is abundant material. In order to put the electrode into practice, it is necessary to develop innovative electrolyte that contains effective additives to prevent shape-changes of the electrode. The undesirable phenomena taking place on the electrode surface should degrade the performance of the electrode, such as cyclabilities and current efficiencies. In particular, a filament-like deposition of Zn, what we call a “mossy” structure, is a serious problem. It takes place under relatively low overpotential environment, which is different mode from a dendritic growth under high overpotential range.
The mossy structure has been a big interest and our past study explained the mechanism underlying the structure in terms of diffusivity of deposited Zn atom on the electrode surface.1 We also try to find effective additives to prevent the mossy structure: heavy metals, such as Pb2 or Sn3, are now one of the candidates. For more precise controls of the shape-change of the electrode, such effective additives are to be analyzed in detail, so that we understand the key to controlling deposition behavior of Zn. This study performed both theoretical calculation with DFT, and electrochemical measurements to identify working mechanism of Sn that mitigates mossy formation on Zn in strongly alkaline solution.
Polarization curves indicated that Sn should work as a suppressor for mossy in the form of [Sn(OH)6]2- ion. It is due to high concentration of OH- in KOH. The results also showed that the complex form is so stable that Sn is not likely to be reduced and deposited on Zn electrode surface. DFT calculation with ESM-RISM, based on the experimental results, evaluated the additive effect of the [Sn(OH)6]2-, by comparing an energy diagram of [Zn(OH)4]2- reduction with the Sn complex to that of without it. It turned out that [Sn(OH)6]2- facilitated reduction of [Zn(OH)4]2-, by interacting with its intermediate. According to a statistic model we formerly proposed, the interaction should effectively suppress the mossy growth of Zn. The theoretical results were in good agreement with electrochemical impedance spectroscopy measurements.
Acknowledgements
This work was supported by JSPS KAKENHI Grant Number JP21H01642.
References
1. Yusuke Onabuta, Masahiro Kunimoto, Songyi Wang, Yasuhiro Fukunaka, Hiromi Nakai, Takayuki Homma, J. Phys. Chem. C, 126, 5224 (2022).
2. Yusuke Onabuta, Masahiro Kunimoto, Fumimasa Ono, Yasuhiro Fukunaka, Hiromi Nakai, Giovanni Zangari, Takayuki Homm, Electrochem. Commun., 138, 107291 (2022).
3. T. Otani, Y. Fukunaka, T. Homma, Electrochim. Acta, 242, 364 (2017).