bluuebunny/crossref_metadata_2025_split huggingface dataset:
Morphological and Chemical Characterization of a Mechanically Alloyed Rubber Toughened PMMA With X-Ray Spectromicroscopy
Authors: Smith A P , Ade H , Spontak R J , Koch C C 
Published: July 2020

Abstract
Rubber toughening was first developed about seventy years ago as a method of increasing the impact resistance of brittle glassy polymers. Since that time, a wide variety of techniques have been developed to produce discrete dispersions of rubber within a glassy polymer matrix. We are exploring a new route to rubber-toughen polymer through the non-equilibrium process of mechanical alloying (high-energy ball milling). Here we have blended poly(methyl methacrylate) (PMMA) with polyisoprene (PI) (see the insets in Fig. 1 for chemical structures) and have characterized the resultant blends with Scanning Transmission X-ray Microscopy (STXM) in order to obtain chemical, as well as morphological, information about the blends.
The STXM technique utilizes tuneable soft x-rays that are focused with a diffraction zoneplate to a microprobe of 45 nm full width at half maximum. Thin sections of the sample are placed at the microprobe and the transmitted photon intensity is measured.
EDS from then Till Now—A Chronology of Innovation
Authors: Friel John J 
Published: July 2020

Abstract
Since its introduction in 1968 on both the EPMA and SEM, the energy-dispersive spectrometer has become widely used from research laboratories to production testing. It has become the mainstay for microanalysis in many scientific disciplines. A discussion of energy-dispersive spectrometry (EDS) logically divides into two lines of development: X-ray detector/hardware and X-ray analyzer/software. Of the several types of EDS detectors, only Si(Li) and intrinsic germanium detectors (IG) will be covered in this review, as they are the most common on electron microscopes.
The 1960s— The use of a solid state EDS detector on an EPMA was first described by Fitzgerald, et al. in 1968.1 They realized at the time that the high collection efficiency of about 80% permitted analysis at lower beam current for the same counting statistics and electron dose on the specimen. The first installation of a Si(Li) detector on an SEM came later the same year.
SI(LI) and Hpg Detectors: Recent Measurements
Authors: Sareen R A , Nashashibi T 
Published: July 2020

Abstract
Small Si (Si(Li), Intrinsic Si, PEN diodes) and Ge (HPG) planar detectors are used for measuring the energy and intensity of X-rays at low energies (below 100 keV). Applications include energy dispersive microanalysis in the electron microscope and x-ray fluorescence in tube excited systems. They are also finding increasing use on synchrotron beam lines. Both types of detector have unique and special properties and there is a wealth of information in the literature1 describing their principles of operation including their spectral characteristics.
For example, the superior resolution (110 eV compared to 130 eV (FWHM) at 5.9 keV) obtained with 10 mm2 HPG detectors is a consequence of Ge's smaller band gap (0.7 eV compared to 1.1 eV eV for Si). This leads directly to a lower value for the activation energy (2.9 eV compared to 3.81 eV at 77K). Both materials have very similar Fano factors (approximately 0.11).
The Impact of EDS In Materials Science Microanalysis
Authors: Williams D B 
Published: July 2020

Abstract
Since its invention in 1968, the EDS has played an essential role in X-ray analysis of materials, at the micrometer level, in the electron probe microanalyzer (EPMA). In the EPMA, the characteristic X-ray intensity from bulk specimens is sufficient that, despite its very small collection angle, the wavelength dispersive spectrometer (WDS) can also be used. Given the excellent energy resolution of the WDS it has often been the spectrometer of choice for bulk quantitative X-ray microanalysis. Therefore, the most important role of the EDS has been in X-ray microanalysis of thin specimens in the analytical electron microscope (AEM) because, in an AEM, the limited confines of the stage mean that EDS is the only viable spectrometer. Since the pioneering work of Cliff and Lorimer in the 1970s, EDS has been the method by which all high spatial resolution X-ray microanalysis of thin foils has been performed.
The Use of Energy Dispersive X-Ray Microanalysis in the Geological Sciences: 30 Years of Heavy and Creative Application
Authors: Armstrong John T 
Published: July 2020

Abstract
Considering the heavy use by the geological community that followed, it is not surprising that first two authors of the introductory paper in Science on the energy dispersive x-ray spectrometer applied their x-ray microanalysis skills predominantly in the geological sciences. The energy dispersive spectrometer became first commercially available at an ideal time for the geological community. During the 1960’s, mineralogists and petrographers like K. Keil, J.V.P. Long, J.C. Rucklidge, J.V. Smith, A. Albee, and A. Chodos demonstrated that electron microprobe analysis with wavelength dispersive spectrometers could provide accurate in-situ analysis of portions of individual mineral grains on a scale not readily obtainable by other techniques (e.g., 2-3 and cited refs.). The electron microprobe enabled analysis of features observed by reflected- and transmitted-light polarized optical microscopy (prime tools of the mineralogist and petrographer) and was beginning to be used routinely for the study of meteorites and terrestrial rocks and even more exotic types of specimens, like individual microparticles from sediment and airborne particulate samples.
Energy Dispersive Spectrometry in the AEM
Authors: Michael J R 
Published: July 2020

Abstract
Energy-dispersive x-ray spectrometry (EDS) with a SiLi detector has become a standard technique in the analytical electron microscope (AEM). There have been many difficulties to overcome involving both the interfacing of the spectrometer to the microscope and in developing robust techniques for quantitative analysis of thin specimens. The AEM is a difficult environment for EDS due to the high accelerating voltages (100-400 kV) typically used and due to constraints on detector placement relative to the specimen as a result of the confined space within the specimen region of the AEM. The first published account of the installation of SiLi EDS on a transmission electron microscope (TEM) occurred in 1969. In this paper and subsequent publications, these authors described many of the difficulties that still haunt EDS in the AEM.
The initial attempts at interfacing EDS to a TEM column demonstrated that the. specimen stage of a TEM was not ideal for this purpose.
Low Beam Energies for EDS Chemical Microanalysis in the SEM (LVEDS)
Authors: Boyes E D 
Published: July 2020

Abstract
Microanalysis data depe nd strongly on the electron beam energy used in the S E M and the effects are more pronou nced with bulk samples than with thin sections. The situation can be used to advantage but there are also significant problems. The data and any quantitative corrections can be quite different at different beam energies. Th e spectra look different and this can be both helpful and confusing, with low ene rgy x-ra y lines generally more prominent at lower voltages. S p ec tra at several different voltages are particularly informative, both for quantitative analysis and to deco nvo lute three dimensional geometries. There may be no single perfect voltage for an analysis.
Computer Simulation Applied to WD Analysis
Authors: Reed S JB , Buckley A 
Published: July 2020

Abstract
The efficiency and reliability of WD analysis can be enhanced substantially by means of computer simulation carried out before embarking on the actual analysis, thereby eliminating the need for a time-wasting ‘trial and error’ process and preventing errors in quantitative analysis due to line overlaps etc. which otherwise might be undetected. By displaying on-screen the combined spectra of elements known or expected to be present in a given sample, overlaps can be studied in detail, which may indicate the preferability of using an alternative analytical peak (e.g. L(Lβ1 instead of Lα1). The selection of optimum background positions with minimal overlap from neighbouring elements is also facilitated. These choices can be made much more rapidly and reliably than by depending on wavelength tables, while also saving the considerable instrument time required to carry out wavelength scans for each new type of sample.
Electron Probe Evaluation of Heterogeneity in the Certification of NIST Standard Reference Materials for Microanalysis
Authors: Marinenko R B , Leigh S 
Published: July 2020

Abstract
The certification process for a microanalysis standard can be quite lengthy. In addition to certifying the reference material for composition, the extent of heterogeneity between specimens and within specimens must be determined. NIST (or formerly, NBS) 260 Special Publications have been used in the past to describe procedures used for individual SRM certifications. Some of these publications describe in detail how the extent of microheterogeneity (or, microhomogeneity) as well as the specimen to specimen heterogeneity can be determined. The intent here is to describe a general statistical approach used at NIST to determine and report the extent of heterogeneity. This approach can be readily used by other laboratories either for certification or for evaluation of standards.
When evaluating a material for use as a standard, there are several physical characteristics which must be satisfied. The material must be robust under the electron beam at the voltages and currents to which it will be subjected in its proposed use. When mounted and polished, it should be stable on exposure to the atmosphere. However, if the material will not be mounted and polished in use, it should be in the same physical form as the final certified standard material.
A Microprobe Study to Differentiate Bulk Chemical Data by Neutron Activation Analysis on Guatemalan Pottery
Authors: Ross L , Cogswell J , Neff H 
Published: July 2020

Abstract
Bulk chemical characterizaton with techniques such as neutron activation analysis (NAA) has been used for many years to identify sources of archaeological artifacts by comparing bulk chemical profiles of archaeological artifacts to profiles determined for samples of raw material for source identification. The chemical approach to determining the provenance of archaeological pottery is complicated by the paste preparation activities of potters and by post-depositional processes. In a ceramic provenance investigation, the investigator typically identifies a series of relatively homogeneous subgroups, which most often are assumed to represent geographically restricted raw material sources. Although the source-specific interpretation is often the most parsimonious explanation of compositional patterning, it is really only the first of several competing hypotheses which, singly or in combination, might account for patterns of similarity and difference in a compositional data set. In this case, two white firing pottery types (SAWH and Ivory) made during the Late and Terminal Formative periods (300 B.C. - 200 A.D.) in southeastern Mesoamerica (Guatemala) were found to be chemically distinct.
Image Formation With Upper and Lower Secondary Electron Detectors in the Low Voltage Field-Emission SEM
Authors: Liu J 
Published: July 2020

Abstract
High-resolution secondary electron (SE) imaging was first demonstrated at 100 kV in the STEM a decade ago. High-resolution SE imaging is now routinely obtainable in field-emission SEMs. Although nanometer-scale surface features can be examined at low incident beam voltages we still do not fully understand the factors that affect the contrast of low voltage SE images. At high incident beam voltages, SE1 (SEs generated by the incident probe) and SE2 (SEs generated by backscattered electrons at the sample surface) can be spatially separated. SE1 carries high-resolution detail while SE2 contributes to background. At low incident beam voltages, however, the interaction volume of the incident electrons shrinks rapidly with decreasing incident beam voltage. Thus, both the SE1 and SE2 signals carry high-resolution information. At low incident beam voltages, SE3 (SEs generated by backscattered electrons impinging on the sample chamber, pole pieces and etc.) also carries high-resolution detail and contributes significantly to the collected signal, especially for high atomic number materials and at short working distances.
Multivariate Statistical Analysis of Low-voltage EDS Spectrum Images
Authors: Anderson Ian M 
Published: July 2020

Abstract
Whereas energy-dispersive X-ray spectrometry (EDS) has been used for compositional analysis in the scanning electron microscope (SEM) for 30 years, the benefits of using low (&lt;5 kV) operating voltages for such analyses have been explored only during the last few years. This paper couples low-voltage EDS with two other emerging areas of characterization: spectrum imaging and multivariate statistical analysis (MSA). The specimen analyzed for this study was a finished Intel Pentium processor, with the polyimide protective coating stripped o ff to expose the final active layers. Data acquisition was performed with a Philips XL30-FEG SEM operated at 2 kV and equipped with an Oxford super-ATW detector and XP3 pulse processor. The specimen was normal to the electron beam and the take-off angle for acquisition was 35°. The microscope was operated with a 150 μm diameter final aperture at spot size 6, which yielded an X-ray count rate of ∼1000 s-1.
Beam Size in the Environmental SEM: a Comparison of Model and Experimental Data
Authors: Wight S A 
Published: July 2020

Abstract
Knowledge of the magnitude of the scattered electron skirt in the environmental scanning electron microscope (ESEM) or low vacuum scanning electron microscope (LVSEM) is important to the understanding of the analytical spatial resolution of energy dispersive spectrometry (EDS). The extent of beam scattering is a function of the distance from the final aperture to the specimen, composition of the gas present, chamber pressure, accelerating voltage, and beam current. This work compares model predictions of electron scattering to experimental measurements of electron scattering. Several of the popular Monte Carlo programs written for electron-solid interactions were not designed for low vacuum conditions. Joy has developed a model that takes into account the electron scattering which takes place in the chamber before interacting with the specimen; thus it is useful for LVSEM conditions. That model is incorporated in Electron Flight Simulator - E (Small World, Vienna VA)1 and is used in this work.
Topographic Comparison of G-Wire DNA Imaged by Hydration Scanning Tunneling and Atomic Force Microscopy as a Function of Humidity
Authors: Janigian D , Morales E , Muir T , Garcia B , Vesenka J 
Published: July 2020

Abstract
The tendency of poly-G oligonucleotides to undergo self-assembly into helical nucleic acid tetramers have been termed G-quartets. Also known as G-wires, these structures retain their crystallographic determined dimensions better than duplex DNA when imaged with the atomic force microscope (AFM). Relative humidity has been known to affect both the resolution and measured height DNA strands on mica. The results below aim to develop a model that can be used to define the mechanical properties of G-wires by scanning probe microscopy investigations. G-wires were examined under a wide range of relative humidity to determine their tolerance to shear forces under the AFM, and to establish imaging conditions for hydration scanning tunneling microscopy (HSTM).
The relative humidity dependence of G-wires were taken with 125 μm long, 20 μm wide silicon nitride cantilevers in contact AFM mode (spring constant ∼ 0.4 N/m) (Fig. 1).
Using a Moderate Vacuum, Hot/Cryo-Stage Equipped AFM for In-Situ Observation of α-Phase Growth In 60SN40PB Hypoeutectic Solder
Authors: Leonard D N , Russell PE 
Published: July 2020

Abstract
Atomic force microscopy (AFM) was introduced in 1984, and proved to be more versatile than scanning tunneling microscopy (STM) due to the AFM's capabilities to scan non-conductive samples under atmospheric conditions and achieve atomic resolution. Ultra high vacuum (UHV) AFM has been used in surface science applications when control of oxidation and corrosion of a sample's surface are required. Expensive equipment and time consuming sample exchanges are two drawbacks of the UHV AFM system that limit its use. Until recently, no hot/cryo-stage, moderate vacuum, controlled gas environment AFM was commonly available.
We have demonstrated that phase transformations are easily observable in metal alloys and polymers with the use of a moderate vacuum AFM that has in-situ heating/cooling capabilities and quick (within minutes) sample exchange times. This talk will describe the results of experiments involving a wide range of samples designed to make use of the full capabilities of a hot/cryo-stage, controlled gas environment AFM.
Diamond Indenter Shaping Using Focused Ion Beam
Authors: Phillips JR , Jarausch KF , Stark TJ , Houston JE , Griffis DP , Russell PE 
Published: July 2020

Abstract
Nanoindentation is becoming an increasingly important tool for the characterization of the mechanical properties of materials on the nanometer scale. The mechanical response of a material is measured by recording the force acting between an indenter and the material while displacing the indenter into the material. The shape of the recorded load displacement curves is not only dependent on the mechanical properties of the material, but also strongly dependent on indenter geometry. To minimize difficulties in the extraction of quantitative material mechanical property information from the force curve, indenter geometry must be controlled and characterized on the same scale as the indentation, i.e. on the nanometer scale. Diamond, the hardest naturally occurring material, is an obvious choice as the indenter material. Conventional lapping techniques4 do not provide sufficient control to produce indenter geometries of the shapes and to the precision required for optimal nanoindentation measurements.
Nanomanipulation for Material Properties, Substrate Interactions and Devices
Authors: Superfine R , Falvo M R , Clary G J , Paulson S , Taylor R M , Chi V , Brooks F P , Washburn S 
Published: July 2020

Abstract
In many cases in experimental science, it is true that the instrument interface becomes a limiting factor in the efficacy of carrying out unusual experiments, or prevents the complete understanding of the acquired data. We are developing an advanced interface for Scanning Probe Microscopy (SPM) which allows intuitive rendering of datasets and natural instrument control, all in real-time. The interface, called the nanoManipulator, combines a high performance graphics engine for real-time data rendering with a haptic interface which places the human operator directly into the “feedback loop” that controls surface manipulations. In practice, the user holds a stylus in hand. By moving the stylus laterally, the user directs the movement of the SPM tip across the sample. The haptic interface enables the user to “feel” the surface by forcing the stylus to move up and down in response to the surface topography.
Electron Scattering In Diamond as a Function of Thickness
Authors: Bell David C 
Published: July 2020

Abstract
Background
The electron energy-loss spectrum of a single crystal diamond wedge has been examined, with particular reference to the excitation of plasmon oscillations in the bulk of a diamond crystal. The electron energy-loss spectrum has been previously studied [1], and in particular the ‘low-lo ss’ region of the spectrum shows a number of important features, Fig. 1. The main feature in the energy-loss spectrum is a peak at ∼ 33 eV which corresponds to a plasma resonance of valence electrons. Diamond has 4 valence electrons which yields a value of Ep = 31.0 eV. The upward shift in the resonance energy to 33 eV is caused by single-electron excitation at lower energy-loss values. An important feature is the “bump” at about 23 eV, which has been shown to be an interband transition [2].
Absorption Potential for Dynamic Electron Diffraction - A Revisit
Authors: Wang ZL , Zhang Chen 
Published: July 2020

Abstract
Quantitative analysis of structural information provided by transmission electron diffraction and imaging strongly relies on computer simulations. An important quantity in dynamic calculation is the “absorption” potential. The absorption here actually means that the electron is not absorbed by the specimen rather it is scattered out of the elastic state (or Bragg peaks) due to energy-loss and momentum transfer, resulting in a decrease in the intensity of the elastic wave. This is the effect of inelastic scattering (or diffuse scattering) on the Bragg reflected waves [1]. Almost all of the model calculations for the absorption potential have been based on the approximation o riginally introduced by Y o sh ioka, in which the Green's function is approximated by its form in free-space. Thus, the absorption potential is simplified into a non-local function that depends only on the nature of the inelastic scattering.
Application of Synchrotron Radiation to Analysis of Both Contamination and Structure of Silicon Surfaces and Interfaces
Authors: Pianetta P , Brennan S 
Published: July 2020

Abstract
Synchrotron Radiation has become an important tool for the analysis of silicon surfaces in both fundamental and applied problems with techniques ranging from x-ray scattering to fluorescence. Applications that have been studied include the analysis of ultra-low levels of impurities on silicon wafer surfaces using the total external x-ray fluorescence technique (TXRF), measurement of silicon wafer surface roughness using crystal truncation rod scattering, measurement of the stress and defects associated with isolation trenches used in the fabrication of integrated circuits, and the study of transient enhanced diffusion in implanted silicon using x-ray diffuse scattering.
As the dimensions of integrated circuits become smaller and smaller, the thickness of the gate oxide is being reduced to a level where it has become necessary to control the process to virtually atomic levels. With oxide thicknesses less than 100 Angstroms, surface impurities can have deleterious affects on the oxide properties.
Mephisto: A Novel Synchrotron Imaging Photoelectron Spectromicroscope
Authors: Stasio Gelsomina De 
Published: July 2020

Abstract
We discuss the scheme and test performances of the recently commissioned MEPHISTO system in its final configuration. The tests show that the improvements in the electron optics system with respect to other instruments in the same class made it possible to reach lateral resolutions in the 50 nm range. They also demonstrate rather good spectromicroscopy and spectroscopy performances, reliability and flexibility of operation.
This instrument belongs to the class of the electron-imaging systems, like the PEEM (PhotoElectron Emission Microscope) [1] and the X-PEEM (X-ray PhotoElectron Emission Microscope) Microscope [2-5], Our new instrument, called MEPHISTO from the French acronym “Microscope a Emission de Photo électrons par Illumination Synchrotronique de type Onduleur” (Photoelectron Emission Microscope by Synchrotron Undulator Illumination) shares the good characteristics of the instruments of its class: real-time chemical imaging, fast taking of local x-ray absorption spectra, high spatial resolution, large dynamic range, flexibility and user-friendliness.