bluuebunny/crossref_metadata_2025_split huggingface dataset:
The Chemical Stability of Nasicon As a Solid Electrolyte for Seawater Batteries
Authors: Wi Tae-Ung , Lee Chanhee , Rahman Fahmi , Go Wooseok , Kim Min-Ho , Kim Su Hwan , Hwang Daeyeon , Kwak Sang Kyu , Kim Youngsik , Lee Hyun-Wook 
Published: February 2020

Seawater batteries have attracted significant attention for use as grid-scale energy storage systems (ESSs) due to the effective utilization of abundant resources of seawater as a catholyte. Sodium ions in seawater selectively transfer through a solid electrolyte to the anode for saving the chemical energy. For the selective transfer of sodium ions, NASICON (Na3Zr2Si2PO12) electrolytes are one of the suitable candidates for the solid electrolyte to prevent a short circuit between the catholyte and anode. However, NASICON powder is known to be dissolved in water because of the structural instability, leading to catastrophic failure of the system, while NASICON solid electrolytes are stable in seawater during the battery operation.
In this regard, we have carefully compared the stability of NASICON powder and pellets in both DI water and seawater associated with different degradation mechanism. Figure shows the structural stability of NASICON pellets after the immersion tests in DI water and seawater indicative of the chemical stability of NASICON in seawater. In addition, the electrochemical performance shows higher stability of the seawater-immersed electrolyte than the DI water-immersed electrolyte. The corresponding analyses are carried out to confirm the effect of the investigation.
Furthermore, we have employed polymer coating methods to enhance stability and performance as a seawater battery system. The coating layer enables to prevent direct contact with seawater, resulting in longer stability during operation without compromising ionic conductivity. These results reveal that NASICON solid electrolytes can be operated in seawater with high stability and performance.
Figure. The chemical stability comparison of NASICON in seawater and DI water
References

Mauvy, F., Siebert, E., & Fabry, P. (1999). Reactivity of NASICON with water and interpretation of the detection limit of a NASICON based Na+ion selective electrode.
Talanta
, 48(2), 293–303.

Fuentes, R. O., Figueiredo, F., Marques, F. M. B., & Franco, J. I. (2001). Reaction of NASICON with water,
Solid State Ionics
, 263, 309–314.

Kim, Y., Kim, H., Park, S., Seo, I., & Kim, Y. (2016). Na ion- Conducting Ceramic as Solid Electrolyte for Rechargeable Seawater Batteries.
Electrochimica Acta
, 191, 1–7.

Jung, J. Il, Kim, D., Kim, H., Jo, Y. N., Park, J. S., & Kim, Y. (2017). Progressive Assessment on the Decomposition Reaction of Na Superionic Conducting Ceramics.
ACS Applied Materials & Interfaces
, 9(1), 304–310.

Figure 1
The Effect of Al2O3 ALD Precursors on the Electrochemical Performance of Cathode Materials for Lithium-Based Battery Applications
Authors: Kang Donghyeon , Mane Anil U. , Elam Jeffrey W. , Warburton Robert , Greeley Jeffrey 
Published: February 2020

Al2O3 coatings prepared by atomic layer deposition (ALD) using trimethyl aluminum (TMA) and H2O on various cathode materials have been shown to enhance the battery cycle stability of lithium ion batteries. Interestingly, not all cathode materials are enhanced by Al2O3 ALD coating. For example, while Al2O3 coating on lithium cobalt oxide (LCO) using 1-2 TMA/H2O ALD cycles dramatically improves cycle performance [1], much less positive effect on lithium manganese oxide (LMO) was observed [2]. We revealed the TMA surface reactions on LMO are unusual in that they do not involve hydroxyls, ethane is released, and the manganese undergoes redox chemistry from our previous study [2]. Furthermore, density functional theory (DFT) calculations reveal that this unique mechanism is driven by the large free energy changes upon methyl loss from TMA [2].
This information leads us to speculate that the surface reactions and subsequent electrochemistry might also depend on different Al precursors. To evaluate our hypothesis, we are exploring a range of aluminum precursors including trimethyl aluminum (TMA), tris(dimethylamido) aluminum (Al-TDMA), aluminum trichloride (AlCl3), dimethyl aluminum isopropoxide (DMAI), and aluminum triisopropoxide (ATIP) on LCO and LMO cathode materials. Our preliminary results showed that very different ALD chemistries on between LCO and LMO cathode materials. It suggests a correlation between cation reduction on the cathode surface and the relative Lewis acidity of the Al precursor ligands. We will elaborate on these findings using results from XPS measurements, DFT calculations, electrochemical characterizations, and battery cycling studies.
[1] Y. S. Jung et. al., J. Electrochem. Soc.
157 (1) A75-A81, (2010).
[2] L. Chen et. al., Chem
4 2418-2435 (2018).
(Invited) Application of ALD-Grown Metal Oxide Layers for Energy Applications: Photovoltaic and Photoelectrochemical Water Splitting
Authors: Shin Byungha 
Published: February 2020

ALD is a versatile growth technique for depositing a thin conformal layer of various functional materials. In this presentation, I will discuss two applications of ALD in energy materials research—photovoltaics (PV) and photoelectrochemical (PEC) water splitting. In the PV part, I will present how ALD-growth thin dielectric layers can be used to passivate both the top and bottom interfaces of Cu2ZnSnSe4 solar absorber, which has been drawing attention in the PV community as an earth-abundant, non-toxic and cheap solar material. The passivation strategy with the thin ALD-grown layers led to significant improvement in open-circuit voltage by suppressing charge recombination.[1] Another example of the ALD application in thin film PV is the replacement of CdS—the most common buffer layer in CIGS solar cells but with a toxic Cd—with ALD-ZnTiO.[2] I will present the application of ALD-ZnTiO whose materials properties were tuned In the PEC part, various metal oxide layers prepared by ALD were applied to Cu(In,Ga)Se2 (CIGS) photocathode as protection layers to prevent photo-corrosion of the CIGS in a liquid electrolyte.[3],[4] Different degradation mechanisms were identified for PEC devices with different ALD protective overlayers, details of which will be discussed.
[1] Kim et al., Progress in Photovoltaics, 25 (2017), 4.
[2] Hwang et al., ACS Applied Materials & Interfaces, 10 (2018), 20920.
[3] Koo et al., ACS Applied Materials & Interfaces, 9 (2017), 5279.
[4] Koo et al., Advanced Functional Materials, 28 (2018), 16.
Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs
Authors: Kabir Muhammad Salahuddin , Chowdhury Rahnuma Rifat , Manley Robert G. , Hirschman Karl D 
Published: February 2020

The focus of this work is on the performance dependence of scaled IGZO TFTs with variations in gate electrode configuration and passivation options. A conservative process for the fabrication of long channel length devices (i.e. L ≥ 2 µm) exhibits long-channel behavior and excellent stability in both bottom-gate (BG) and double-gate (DG) configurations [1,2]. As the devices are scaled to shorter channel lengths, limitations of the device electrostatics begin to give way to short channel behavior. Dielectrics used for the gate and back-channel regions are typically adjusted to overcome short-channel effects as lateral dimensions are reduced. However certain interaction effects require additional process modifications for the desired device response and to accommodate the details of process integration. Scaled devices with channel lengths L < 2 µm are under investigation, with process conditions evaluated by quantitative measures on the materials properties, electrostatic behavior, and stability when subjected to bias and thermal stress. Process recipes for PECVD passivation layers, oxygen ambient annealing, and ALD capping materials are under reevaluation for their impact on short-channel devices. TCAD simulation is used as a resource to refine material and device models [3], and provide insight on the details which establish the limits of device operation. Design rule scaling and self-aligned gate device structures are also being studied for reduced parasitic capacitance and stage delay, and a reduction in overhead real estate.
[1] T. Mudgal, N. Edwards, P. Ganesh, A. Bharadwaj, Eli Powell, M.S. Pierce, R. G. Manley, and K. D. Hirschman, “Investigation on the Gate Electrode Configuration of IGZO TFTs for Improved Channel Control and Suppression of Bias-Stress Induced Instability”, ECS Trans. 75 (10), 189-197 (2016)
[2] M.S. Kabir, P. Ganesh, R.R. Chowdhury, H. Sethupathi, J. Okvath, J. Konowitch, R.G. Manley and K.D. Hirschman, “Channel-length dependent performance degradation of thermally stressed IGZO TFTs”, ECS Trans. 86 (11), 125-133 (2018) DOI: 10.1149/08611.0125ecst
[3] K.D. Hirschman, T. Mudgal, E. Powell and R.G. Manley, “A 2D empirical model for on-state operation of scaled IGZO TFTs exemplifying the physical response of TCAD simulation”, ECS Trans. 86 (11), 153-166 (2018) DOI: 10.1149/08611.0153ecst

Figure 1
(Keynote) Devices for Si Based Quantum Computing
Authors: Vinet Maud 
Published: February 2020

Universal quantum computers offer potentially disruptive solutions to solve currently intractable problems. They provide a tool to artificially reproduce quantum systems with another quantum system that can be programmed at will by making use of phenomena that only occur in the quantum world such as superposition and entanglement. However, modern quantum processors are still relatively simple and their performance is still far from what current classical supercomputers can achieve. Technologies such as ion traps or superconducting qubits are leading the first wave of development with machines of a few tens of quantum bits or qubits1, the basic unit of quantum information processing. These two technologies are attracting the first rounds of public funding at the European level with the Flagship Programme on Quantum Technologies and a significant amount of private funding with superconducting qubit initiatives run by well-established American companies such as IBM, Google or start-ups like IonQ or Rigetti Computing.
However, the current qubit numbers are insufficient to realise quantum computation of significant practical use. To run a simulation of a simple material the predictions set the number of necessary qubits to 102-103 units and for an arbitrarily complex one to 106-108 units. Scaling up to a large number of qubits is hence the greatest challenge to fulfill the promises of quantum computing. Current hardware approaches to ion trap and superconducting qubits offer limited prospects for scalability with qubit densities of 1 and 100 qubits/cm2, respectively.
Compared to other quantum computing implementations, qubits silicon-based spin qubits offer the best prospects in terms of scalability. The typical footprint of silicon-based spin qubits manufactured with complementary-metal-oxide semiconductor technology is of the order of a few hundred nm².

In addition to their small footprint, Si spin qubits actually show promising performance and a rapid rate of improvement. Recent experimental demonstrations in several academic environments have demonstrated single-qubit gates with fidelities well-above error-correction protocols (>99%17) in cases exceeding those of superconducting qubits, whereas two-qubit gates (F2Q = 98%19) are already above the typical values observed in superconducting systems and are rapidly improving.
In this paper, we will first remind the principle of how to design a qubit based on silicon. Then we will review the current state-of-the-art and will present the architectures to design a large scale quantum computer based on Si spin qubits, their pros and cons regarding variability assumptions and technological achievements will be discussed. We will also show how the recent demonstration of long distance quantum information transfer can be implemented in silicon.
(Invited) Controlled Synthesis and Thermoelectric Properties of Tin Telluride-Based Topological Crystalline Insulator Nanowires
Authors: Zhang Shixiong 
Published: February 2020

Tin telluride (SnTe) and its related alloys have recently attracted significant interest in the thermoelectric community because of their great potential as environmental-friendly alternatives to the conventional lead telluride-based thermoelectric materials. Meanwhile, they have been demonstrated by condensed matter physicists to be a class of novel quantum materials named topological crystalline insulators (TCI's), which host topological states on their high symmetry crystal surfaces. The SnTe-based TCI's possess intriguing surface properties, including Dirac cones in their electronic band structure and Van-Hove singularities in the density of states. One-dimensional TCI nanowires with large surface-area-to-volume ratios and well-defined facets provide an excellent platform to enhance topological surface contributions to the thermoelectric properties.
In this talk, I will present the controlled growth and thermoelectric studies of SnTe-based TCI nanowires. In particular, I will discuss how we control the facet, diameter, doping, and alloying in the vapor-liquid-solid growth of SnTe nanowires. Measurements of the Seebeck coefficient, and electrical and thermal conductivities were performed on the same single nanowires to accurately determine their thermoelectric figure of merit. I will discuss the enhancement of the Seebeck coefficient and suppression of thermal conductivity in connection with the topological states, doping, alloying, and nano-structuring.
Optically Switchable Memristors: A Route to Hierarchical Control in Artificial Intelligent Systems
Authors: Kemp Neil Timothy 
Published: February 2020

Modulation of resistive switching memory by light opens the route to new optoelectronic devices that can be switched optically and read electronically. Applications include integrated circuits with memory elements switchable by light and optically reconfigurable and tunable synaptic circuits for neuromorphic computing applications and brain-inspired artificial intelligent systems. A novel polarization and wavelength-specific optoelectronic memory device is presented1 that can be controlled purely optically, electronically or by both. Optical or electronic modulation switches the device between low and high conducting states whilst modulation by both facilitates fine-tuning of the resistive memory properties and switching characteristics of the device.
In biological synapses, the connection strength (plasticity) between two neurons is controlled by the ionic flow through the synaptic cleft and it is widely believed that the adaptation of synaptic weights enables biological systems to learn and function. Similarly, the conductance of a memristor depends on the history of the total charge that has travelled through it. A key feature of neuronal learning is habituation, whereby repeated stimuli strengthens the synaptic plasticity whilst a lack of stimuli results in weakening. Learning in biological systems also involves spike-timing-dependent plasticity (STDP). In STDP, learning the synaptic efficacy governing potentiation and depression is determined by the temporal order of pre-synaptic and post-synaptic spikes.
Using our optical memristor device, we demonstrate optical control of synaptic potentiation and depression, optical switching between short and long-term memory and optical modulation of the synaptic efficacy via spike timing dependent plasticity. The work opens the route to dynamic patterning of memristor networks both spatially and temporally by light, thus allowing the development of new optically reconfigurable neural networks and adaptive electronic circuits.2
,
3

References

Jaafar, A. H. et al. Reversible optical switching memristors with tunable STDP synaptic plasticity: a route to hierarchical control in artificial intelligent systems. Nanoscale
9, 17091 (2017).

Kossifos, K. M., Antoniades, M. A., Georgiou, J., Jaafar, A. H. & Kemp, N. T. An Optically-Programmable Absorbing Metasurface. IEEE Int. Symp. Circuits Syst. (2018). doi:10.1109/ISCAS.2018.8351874

Georgiou, J., Kossifos, K. M., Antoniades, M. A., Jaafar, A. H. & Kemp, N. T. Chua Mem-Components for Adaptive RF Metamaterials. IEEE Int. Symp. Circuits Syst. (2018). doi:10.1109/ISCAS.2018.8351852

Figure 1
(Invited) Advancing Compound Semiconductors through Heterogeneous Integration
Authors: Douglas Erica A. , Hollowell Andrew E , Jordan Mathew , Friedmann Thomas , Wood Michael G , Michael Christopher , Arrington Christian L. , Musick Kate , McClain Jaime 
Published: February 2020

Heterogeneous integration (HI) has been developed for Si-based industrial and R&D applications to minimize form factors while enabling such components as logic chiplets and memory into a single architecture. Sandia National Laboratories has a wide range of on-going research activities in developing HI of various semiconductor materials and devices such as optoelectronics and microelectromechanical systems, utilizing a variety of HI technologies, including fine pitch indium thermocompression bonding, solder reflow attachment, and Cu direct bond interconnects (DBI). This talk will provide an overview of present-day capabilities, technologies currently being worked on needed to enable future HI of compound semiconductors, as well as an overview of the progress to-date of Sandia’s research.
Acknowledgment: This work was supported in part by the Laboratory Directed Research and Development program at Sandia National Laboratories. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA-0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.
Influence of Dopants on the Electrochemical Properties of Conducting Polymers As Electrodes for Supercapacitors
Authors: Zhang Miaomiao , Nautiyal Amit , Du Haishun , Zhang Xinyu 
Published: February 2020

Conducting polymers are class of functional polymers having conjugated chain structures. Among them, polyaniline (PAni) and polypyrrole (PPy) are well known for their excellent electrochemical properties as electrode materials of supercapacitors. To achieve high conductivity in conducting polymers, doping is necessary. In conducting polymers, dopants tend to be randomly distributed within the conjugated polymer affecting the structural and electrical properties of conducting polymers and as a result the electrochemical performance are strongly affected by the resulting structural and electronic disorder.
In this paper, the influence of dopants: hydrochloric acid (HCl), perchloric acid (PrA), sulfuric acid (SA), p-toluene sulfonic acid (p-TSA), phosphoric acid (PhAc) and phytic acid (PA), on electrochemical performance of PAni and PPy were evaluated, respectively. For better comparation and understanding of the effect of dopants on the electrochemical properties of conducting polymers, the morphologies and structures of PAni and PPy obtained by using different dopants were characterized by SEM, TEM, XRD, TGA, etc. Their electrochemical performance as electrode materials for supercapacitors were evaluated by using cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), electrochemical impedance spectroscopy (EIS). Results showed that, for both PAni and PPy, a smaller size of dopants helps to form a more compact coating with better conductivity in which ions could easily diffuse in and out of the conducting polymers. Thus, better electrochemical performance and higher capacitance could be obtained. However, during charge-discharge process the conducting polymers with smaller dopants were much easier to swell and shrink that makes their degradation faster. On the other hand, bigger size dopants showed better stability at higher scan rates and current densities. This work demonstrated that the size of dopants played a big role on the electrochemical performance and stability of conducting polymers when they were used as supercapacitor electrodes.
Integrating Pseudocapacitive Function into Air-Cathodes with 3D-Wired Nanoscale MnOx: Enabling Pulse-Power for Zn–Air Batteries
Authors: Chervin Christopher N. , Long Jeffrey W. , Sassin Megan B. , Parker Joseph F. , Hopkins Brandon J. , Rolison Debra R. 
Published: February 2020

Metal–air batteries have the highest specific (packaged) energy among common battery chemistries (over 400 Whkg–1 for Zn–air) with the added benefits conferred by aqueous electrolytes of safety and affordability. But air-dependent batteries are power-limited by catalytic and mass-transfer restrictions associated with reduction of molecular oxygen at the air cathode—an electrode that must support multiple tasks: O2 transport, ion transport, electron conduction, and electrocatalytic reactivity. To address this power limitation, we have redesigned the air cathode using an architectural and nanoscopic perspective that marries complementary characteristics of batteries and electrochemical capacitors. We demonstrate that air cathodes comprising fiber paper–supported carbon nanofoams modified with conformal nanoscale coatings of Na+-birnessite-type MnOx (10–20 nm thick) exhibit dual functionality: (i) oxygen reduction to sustain long-term energy delivery and (ii) faradaic pseudocapacitance associated with Mn(III/IV) redox to provide intermittent, farads-worth discharge pulses over 10s of seconds [1,2]. Manganese (III) sites in the post-pulsed oxide spontaneously recharge to Mn(IV) in the presence of oxygen from air, making the oxide ready and available for subsequent pulse-power discharge.
[1] Redesigning air cathodes for metal–air batteries using MnOx-functionalized carbon nanofoam architectures. C.N. Chervin, J.W. Long, N.L. Brandell, J.M. Wallace, and D.R. Rolison, J. Power Sources
2012, 207, 191–199.
[2] Dual-function air cathode nanoarchitectures for metal–air batteries with air-independent pulse power capability. J.W. Long, C.N. Chervin, N.W. Kucko, E.S. Nelson, and D.R. Rolison, Adv. Energy Mater.
2013, 3, 584–588.