Thermoelectric Properties of Highly Ordered Metal-Organic Framework Films
Authors: Chen Xin , Wang Zhengbang , Lin Pengtao , Zhang Kai , Baumgart Helmut , Redel Engelbert , Wöll Christof 
Published: February 2020

Surface Anchored Metal-organic-framework (SURMOF) films are designed quasi-crystalline compounds that consists of metal ions connected by organic ligands, forming highly ordered porous structures. The SURMOF films initially were considered to have limited applications in electronic devices because of their insulating character. Recently, several approaches were found to tune the electrical conductivity of MOFs [1]. One of the effective methods found is to infiltrate guest molecules inside the porous framework to transport ions, and hence to modulate the electrical properties of the host framework. MOF Cu3(BTC)2 (BTC: benzene tricarboxylate) is a typical MOF film known as HKUST-1 (Hong Kong University of Science and Technology 1). Its electrical conductivity could increase up to 7 orders of magnitude by introducing tetracyano-quinodimethane (TCNQ) guest molecules. Recently MOFs films received more attention in the fields of switching nanodevices [2], sensors, and thermoelectrics. reported MOF films loaded with TCNQ@Cu3(BTC)2 exhibiting high Seebeck coefficients and low thermal conductivity [3]. However, the low electrical conductivity reduces the figure of merit ZT of MOFs.
In this work we present alternating MOF/PbTe and MOF/PbSe nanolaminate structure synthesized by alternately depositing SURMOF films and lead chalcogenide films. The SURMOFs were fabricated by liquid phase epitaxy (LPE) technique. Ethanoic solution of copper acetate hydrate (1mM) and organic linker solution (1, 3, 5-benzenetricarboxylic acid) (0.2mM) were used as precursors for HKUST-1 MOFs. TCNQ was loaded to modulate electrical conductivity of MOFs. PbTe and PbSe were synthesized on the top of MOFs by thermal ALD technology. Lead bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C11H19O2)2), (trimethylsilyl) telluride ((Me3Si)2Te) and (trimethylsilyl) selenide ((Me3Si)2Se) were employed as the chemical ALD precursors for lead, telluride and selenide, respectively. 20 sccm N2 was used as a carrier gas to transport the chemical precursors into the ALD reaction chamber. The ALD growth temperature was 150 ˚C. The solid lead precursor was volatilized at a temperature of 170 ˚C, the liquid Te precursor required heating to 40 ˚C, and the liquid Se precursor was kept at room temperature. The chamber base pressure was kept at 30 mTorr. Composite nanolaminate structure of MOF/PbTe and MOF/PbSe with film thickness of 10 nm/ 10 nm, 20 nm/ 20 nm, and 60 nm/ 60 nm were fabricated and investigated.
Several physical characterization techniques have been employed to determine the surface characters of the sample. The samples were characterizated by X-ray diffraction (XRD) for film crystal structure, and by field emission scanning electron microscopy (FE-SEM) for film morphology and structure. For thermoelectrical properties of the sample, Seebeck coefficient both in vertical and horizontal directions were measured. Electrical conductivity and thermal conductivity of the films were investigated as well to envaluate ZT value of the samples. Figure 1 shows the IV characteristics of MOF films loaded with TCNQ. The linear IV curve indicates Ohmic conduction in TCNQ loaded MOFs. Figure 2 displays the Seebeck coefficient of TCNQ loaded MOF films over a temperature range of 290 K ~330 K. The maximum Seebeck coefficient of the film occurs at 290 K and the positive Seebeck coefficient reveals positive charge carriers in the MOF film.
References:
1. Talin, A.A., et al., Tunable electrical conductivity in metal-organic framework thin-film devices. Science, 2014. 343(6166): p. 66-69.
2. Wang, Z., et al., Resistive Switching Nanodevices Based on Metal–Organic Frameworks. ChemNanoMat, 2016. 2(1): p. 67-73.
3. Erickson, K.J., et al., Thin Film Thermoelectric Metal–Organic Framework with High Seebeck Coefficient and Low Thermal Conductivity. Advanced Materials, 2015. 27(22): p. 3453-3459.

Figure 1