bluuebunny/crossref_metadata_2025_split huggingface dataset:
ANALISIS PENDAPATAN USAHATANI SAYURAN DAUN DI DUSUN TAENO, DESA RUMAHTIGA, KECAMATAN TELUK AMBON
Authors: Kerepesina Isna V , Thenu Stephen F W , Luhukay Johanna M 
Published: December 2020

Penelitian ini bertujuan untuk menganalisis pendapatan usahatani sayuran daun, dan kelayakan usahatani sayuran daun di Dusun Taeno Desa Rumahtiga. Penelitian ini dilakukan terhadap tiga jenis sayuran daun yaitu kangkung, sawi, dan bayam. Analisis yang digunakan dalam penelitian ini adalah analisis pendapatan dan analisis B / C ratio (rasio keuntungan dan biaya). Hasil penelitian menunjukan bahwa pendapatan usahatani sayuran daun di Dusun Taeno Desa Rumahtiga sebesar Rp 270.164.717,- dengan rata-rata pendapatan sebesar Rp 7.301.749,- selama satu tahun produksi. Analisis B / C ratio mengindikasikan nilai rasio sebesar 1,6, yang artinya pendapatan yang dihasilkan oleh para petani 1,6 kali lebih besar dari biaya yang dikeluarkan. Berdasarkan hasil analisis, dapat disimpulkan bahwa usahatani sayuran daun di Dusun Taeno “layak untuk diusahakan” karena pendapatan lebih besar daripada biaya.
STRATEGY TO IMPROVE THE QUALITY OF HUMAN RESOURCES TO ACHIEVE GOOD GOVERNANCE (Case study at the Department of Small and Medium Enterprises cooperative Bantul Regency)
Authors: Budiarti Nursani , Suswanta Suswanta 
Published: December 2020

The reform of public management will have an impact on the demands of qualifications and competency of human resources in government institutions. Grand Design bureaucracy reform is increasing the capacity and accountability of bureaucratic performance. Human resources development of government apparatus in the present must be placed and directed at a position that corresponds to the field of duty. This research aims to see the strategy used by the Department of Small and Industrial enterprises of Bantul District to improve the quality of government apparatus to achieve good governance to be achieved a better organizational system. Methods used are qualitative descriptive, the technique of collecting data sources obtained by documentation.
Effects of anemia on pregnancy outcomes at Manipal Teaching Hospital
Authors: Mahato Vibha , Shrestha Pravin 
Published: December 2020

Introduction: Anemia is one of the most common disorders affecting the pregnant women in the developing countries like Nepal. Anemia during pregnancy is commonly associated with adverse pregnancy outcomes. Identifying anemia in pregnancy and knowing its common complications will help improve maternal quality care.
Objectives: The objective - was to assess the effects of anemia on pregnancy outcome at Manipal Teaching Hospital
Methodology: This cross sectional study was conducted in Manipal Teaching Hospital from September 2019 to April 2020. A total of 200 anemic pregnantladies attending obstetrics Out Patient Department were selected.Hemoglobinlevel was taken as criteria for deciding anemia and to classify severity of anemia.Anemia in pregnancy is defined by World Health Organization as hemoglobin level less than 11 gm/dl, and hemoglobin concentration of 10–10.9 g/dl, 7–9.9 g/dl, and <7 g/ dl was considered as mild, moderate, and severe anemia, respectively . All were treated depending on severity of anemia and followed up for maternal and perinatal outcome.Data was collected in Microsoft Excel and analyzed by using SPSS version 16.
Result: We found moderate anemia in 129 (64.5%) cases followed by mild in 61(30.5%) and severe in 10(5%) cases. Common maternal complications in anemic patients werepremature rupture of membranein 30 (15%) cases and Urinary Tract Infection in 30(15%) cases.During puerperiumPostpartum Hemorrhage was observed in 12(6%) and wound infection in 9 (4.5%) cases of anemic patient. High incidence of adverse fetal outcome in the form of preterm in 39 (19.5%), Intrauterine growth restrictionin 23(11.5%), Intensive Care Unitadmission in28(14%),low birth weight in41(20.5%) and Intrauterine Death in4(2%) cases of anemic patients were seen.
Conclusion: Maternal infection and adverse perinatal outcome in form of intrauterine growth restriction, Intensive Care Unitadmission, low birth weight and perinatal death were significantly associated with anemia in pregnancy.
Diocesan Synod from the Catholic and Lutheran Perspectives
Authors: Kroczek Piotr 
Published: December 2020

The aim of the article is to verify the hypothesis that the institutions of diocesan synod in the perspective of the Roman Catholic Church and that of the Evangelical Church of the Augsburg Confession in the Republic of Poland are very similar. The method to achieve the aim is the comparable analysis of the legal provisions of the fundamental laws of the Churches which refer to diocesan synod. The general conclusion is that the institutions of diocesan synod seen in the two perspectives are completely incompatible. They are different institutions.
Poezja w podroży i translatorskie synopsis. Komentarz do Bibliografii przekładów literatury chorwackiej w Polsce w 2018 roku
Authors: Majdzik Papić Katarzyna 
Published: December 2020

This article summarizes and discusses the body of translations from Croatian literature published in Poland in 2018. The most significant offering to appear on the Polish market that year was a multilingual collection of mid-career poetry by Dorta Jagić entitled The Portrait of The Body, containing Croatian originals and their translations into Polish (by M. Wierzbicka) and English (by D. Šodan, M. Đurđević). “Synoptic” editions (bilingual or multilingual) allow the reader to view both the original and its translation, which has three major benefits: it contributes to a better circulation of texts; enables deziluzionist reading (the awareness of the difference between the original and the translation); and establishes an intertextual bond between the collected texts.
Komentar k pregledu slovenskih prevodov poljske literaturę v letu 2018/Komentarz do słoweńskich przekładów literatury polskiej z 2018 roku
Authors: Unuk Jana 
Published: December 2020

W artykule dokonano przeglądu słoweńskich przekładów literatury polskiej wydanych w 2018 roku. W tym czasie ukazało się siedem tytułów: dwie powieści, dwa tomiki poetyckie, broszura festiwalowa oraz dwie ilustrowane książki dla młodszych czytelników. Mimo wciąż niewielkich możliwości publikacji recenzji literatury tłumaczonej przełożone w 2018 roku tytuły wzbudziły wyjątkowe zainteresowanie krytyków literackich i recenzentów, które utrzymywało się również w 2019 roku. Jeśli chodzi o wydany w 2017 roku przekład powieści historycznej Olgi Tokarczuk Księgi Jakubowe, można mówić o nieco spóźnionej reakcji czytelników, gdyż w dużej mierze datuje się ją na 2019 rok. Słoweńscy krytycy literaccy niejednokrotnie poszukują w przekładach współczesnych polskich prozaików sygnałów aktualnych wydarzeń społecznych, a nawet politycznych. Niemniej w ostatnim czasie, zwłaszcza po 2018 roku, z zaskoczeniem obserwuje się większe zainteresowanie wydawców poezją. Prócz wyborów wierszy ukazują się także osobne tomiki poetyckie, a nawet dzieła zebrane. Trudno jednak przewidzieć, czy ten trend się utrzyma w przyszłości. Literaturą współczesną i najnowszą, w tym i poezją, zainteresowane są słoweńskie czasopisma literackie (tradycyjne i internetowe), a przede wszystkim literackie audycje radiowe.
Comparison of Laser and Emission Based Optical Probe Techniques
Authors: Lo William K. , Kasapi Steven , Wilsher Kenneth R. 
Published: December 2020

Abstract
Two optical techniques are currently available for making at-speed timing measurements through the backside of CMOS integrated circuits: Laser Voltage Probing and Picosecond Imaging Circuit Analysis. These techniques differ significantly in many ways, including potential for invasiveness, Silicon-On- Insulator probing capability, acquisition times versus test pattern loop length, data acquisition mode, and prospects for probing at the .0.1 ƒÊm nodes. This paper compares and contrasts these techniques so that their relative merits and limitations can be better understood.
Integration of SQUID Microscopy into FA Flow
Authors: Dias Rajen , Skoglund Lars , Wang Zhiyong , Smith David 
Published: December 2020

Abstract
Scanning superconducting quantum interference device (SQUID) microscopy using high-TC SQUID sensor has been slowly gaining acceptance in the failure analysis (FA) community as a number of silicon device manufacturers are applying the tool and technique to an ever-broadening spectrum of silicon technologies for detecting the location of leakage and short failures by imaging the current path through the die and package. This paper will present the application of scanning SQUID microscopy to short isolation on die and explore the integration of this technique into the FA flow. From the examples presented in this paper, it can be seen that die level short isolation has been possible even when the separation from SQUID sensor to current is about 800-900µm. Several potentially useful techniques that will increase the accuracy of locating the die level short nondestructively are also discussed.
TDR Analysis of Advanced Microprocessors
Authors: Bethke David , Seifert Wayland 
Published: December 2020

Abstract
Time Domain Reflectrometry or TDR is an analytical technique used to determine the impedance and electrical length of conductors. This relatively inexpensive technique utilizes a pulse card and digital oscilloscope whereby the reflected signal amplitude from an initiating pulse is measured versus time. The technique is useful for characterizing the impedance of a conductor in the time domain, and has traditionally been employed in board level analysis. More recently, TDR has been shown to be useful in electrically isolating integrated circuit package failures1. Historically, open failures on non-flip chip devices were resolved through relatively straight-forward, low risk methods in a failure analysis lab. Typically, root cause analysis involved simple verification on a curve tracer, non-destructive inspection using X-Ray imaging, chemical, thermal or mechanical decapsulation, optical and electron microscopy and as necessary, the use of mechanical probe isolation. The implementation of advanced flip chip package technology rendered the traditional isolation methodologies inadequate. After verification and X-ray inspection, a decision had to be made prior to subsequent destructive physical analysis as to the most probable failure location. Since the board interconnects, board interposer, and bump locations were not geometrically aligned, isolation of opens through physical cross-sectioning became risky, tedious and lengthy. These constraints were overcome through the use of TDR analysis. The authors have successfully incorporated the TDR technique into AMD’s microprocessor failure analysis flow, improving success rate, reducing risk and decreasing turn-around time. The paper will include a brief description of TDR theory and hardware, technical barriers that the authors encountered during implementation, sample preparation as well as details where the technique was successfully employed in failure isolation. The remaining portion of this paper provides illustrative examples where TDR was effectively utilized in the analysis of slot A cards, ceramic flip chip PGA pins, and internal package trace failures.
Backside Etch: A New FA Technique for Gate Oxide Pinhole and Si Defect Identification for Power IC Devices
Authors: Wang Zhaofeng 
Published: December 2020

Abstract
The present paper describes a backside F/A technique that identifies power IC devices’ Iqcc (quiescent Vcc current) failure mechanisms. Choline hydroxide[1, 2] is used to expose the entire die back, keeping gate oxide intact. The perspective gained from the backside etch allows an analyst to quantitatively observe gate oxide defects as well as Si defects. It is discovered that either one of them can cause the same Iqcc failure. More than 60 dice can be prepared on one specimen in 2-3 hrs. Another advantage of this technique over conventional top delayering or precision crosssection process is that no SEM work is necessary, only optical microscope is needed to identify defects with typical size of 0.1 μm.
Failure Analysis of Plasma-Induced Submicron CMOS IC Yield Loss by Backside Photoemission Microscopy
Authors: Wu Zong Min , Oh Chong Khiam , Neo Soh Ping , Redkar Shailesh 
Published: December 2020

Abstract
Backside photoemission microscopy [1-2] was used to analyze the major yield loss of a communication product fabricated with submicron CMOS process --- functional failures of phase-lock-loop (PLL). The PLL block was covered by five metal layers and three of them were bulk metals. Based upon the backside photoemissions detected on the capacitor structures within the PLL block and the ruptures observed at the emission spots on the polysilicon and gate oxide or of the capacitor after physical deprocessing, the failure was proved due to the capacitor gateoxide breakdown. This was believed to be caused by the plasma-induced-damage during high-density-plasma (HDP) CVD oxide deposition after the front-end processes, as only the lots from one HDP-CVD deposition equipment have very high percentage PLL functional failure. Subsequent machine commonality check did find non-uniform inter layer dielectric (ILD) thickness from this equipment, which indicated the non-uniform plasma intensity occurred during the ILD film deposition. This was further confirmed by the finding of a worn-out gas-shower-head in this system. The abnormal high density of plasma created extra charging and caused the PLL poly capacitor’s gate oxide breakdown due to the antenna effect. After replacing the gasshower- head, the failure was disappeared and yield was back to normal. Through this low yield analysis, we demonstrated an effective application of backside photoemission microscopy to fab yield improvement.
Failure Types & Analysis In Cu Process Development of Design-Rule 0.18μm CPU
Authors: Jeong DongKwon , Ahn JuHyeon , Lee SangIn , Chung JooHyuk , Park ByungLyul , Nam JeongLim , Hah SangRok , Lee Kyung-Tae , Lee Soocheol 
Published: December 2020

Abstract
This paper presents the problems, the solutions, and the development state of the novel 0.18 μm Cu Metal Process through failure analysis of the Alpha CPU under development at Samsung Electronics. The presented problems include : “Via Bottom Lifting” induced by the Cu Via void, “Via Bottom dissociation” due to the IMD stress, “Via side dissociation” due to the poor formation of the Barrier Metal, “Via short/not-open failure” due to the IMD lifting, and Cu metal Corrosion/Loss. The analysis was carried out on the Via Contact Test Chain Patterns, using the “Electron (ION) Charge Up” method. After carefully analyzing each of the failure types, process improvement efforts followed. As a result, the pass rate of the via contact Rc was brought up from a mere 20% to 95%, and the device speed higher than 1.1 GHz was achieved, which surpasses the target speed of 1 GHz.
TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis
Authors: Dai J.Y. , Tee S.F. , Tay C. L. , Ansari S. , Er E. , Redkar S. 
Published: December 2020

Abstract
In semiconductor failure analysis, there is a demand that after mechanical polishing and scanning electron microcopy (SEM) examination, the failure site needs to be analyzed by transmission electron microscope (TEM) for a detailed examination to find the root cause. In this paper, a fast and practical TEM sample preparation method for TEM examination of specific site identified by cross-section scanning electron microscope (SEM) is demonstrated for further structural analysis.
Fault Localization and Functional Testing of ICs by Lock-in Thermography
Authors: Breitenstein O. , Rakotoniaina J.P. , Altmann F. , Schulz J. , Linse G. 
Published: December 2020

Abstract
In this paper new thermographic techniques with significant improved temperature and/or spatial resolution are presented and compared with existing techniques. In infrared (IR) lock-in thermography heat sources in an electronic device are periodically activated electrically, and the surface is imaged by a free-running IR camera. By computer processing and averaging the images over a certain acquisition time, a surface temperature modulation below 100 µK can be resolved. Moreover, the effective spatial resolution is considerably improved compared to stead-state thermal imaging techniques, since the lateral heat diffusion is suppressed in this a.c. technique. However, a serious limitation is that the spatial resolution is limited to about 5 microns due to the IR wavelength range of 3 -5 µm used by the IR camera. Nevertheless, we demonstrate that lock-in thermography reliably allows the detection of defects in ICs if their power exceeds some 10 µW. The imaging can be performed also through the silicon substrate from the backside of the chip. Also the well-known fluorescent microthermal imaging (FMI) technique can be be used in lock-in mode, leading to a temperature resolution in the mK range, but a spatial resolution below 1 micron.
Visualisation of Electrically Active Areas Using Electron Holography
Authors: Muehle U. , Lenk A. , Lehmann M. , Lichte H. 
Published: December 2020

Abstract
In accordance with the predictions of the International Semiconductor Association, a further decrease in the structural widths of semiconductor devices is expected. For an in-depth characterization of actual structural details, the transmission electron microscopy (TEM)-technique is becoming more and more significant. An urgent requirement is in the visualization of dimensions of the doped regions and estimation of p-n-junctions profile with a high level spatial resolution. The off-axis electron holography, a special TEM-technique, is able to visualize electrically active areas in semiconductors. This article describes a way to achieve sample preparation for TEM-holography from actual memory products and also provides an idea of the potential of this technique for semiconductor failure analysis. It shows that different types and sizes of FET's and testing structures could be visualized by focusing on the physical basics, technical solutions, and sample preparation.
STEM (Scanning Transmission Electron Microscopy) in a SEM (Scanning Electron Microscope) for Failure Analysis and Metrology
Authors: Vanderlinde William E. 
Published: December 2020

Abstract
Recent developments in transmission electron microscopy (TEM) sample preparation have greatly reduced the time and cost for preparing thin samples. In this paper, a method is demonstrated for viewing thin samples in transmission in an unmodified scanning electron microscope (SEM) using an easily constructed sample holder. Although not a substitute for true TEM analysis, this method allows for spatial resolution that is superior to typical SEM imaging and provides image contrast from material structure that is typical of TEM images. Furthermore, the method can produce extremely high resolution x-ray maps that are typically produced only by scanning transmission electron microscope (STEM) systems.
A Working Method for Adapting the (SEM) Scanning Electron Microscope to Produce (STEM) Scanning Transmission Electron Microscope Images
Authors: Coyne Edward 
Published: December 2020

Abstract
This paper describes the problems encountered and solutions found to the practical objective of developing an imaging technique that would produce a more detailed analysis of IC material structures then a scanning electron microscope. To find a solution to this objective the theoretical idea of converting a standard SEM to produce a STEM image was developed. This solution would enable high magnification, material contrasting, detailed cross sectional analysis of integrated circuits with an ordinary SEM. This would provide a practical and cost effective alternative to Transmission Electron Microscopy (TEM), where the higher TEM accelerating voltages would ultimately yield a more detailed cross sectional image. An additional advantage, developed subsequent to STEM imaging was the use of EDX analysis to perform high-resolution element identification of IC cross sections. High-resolution element identification when used in conjunction with high-resolution STEM images provides an analysis technique that exceeds the capabilities of conventional SEM imaging.
Laser Decapsulation of Transfer Molded Plastic Packages for Failure Analysis
Authors: Carter George 
Published: December 2020

Abstract
Decapsulation of plastic packaged components is frequently necessary for failure analysis or product development. Conventional techniques utilize an acid etch process, which is not compatible with copper and other acid-sensitive materials. There is limited ability to alter etch geometry or selectively decapsulate individual circuit elements. Laser ablation using a raster scanned Nd:YAG laser was used for selective decapsulation of temperature sensitive passive components in a PDIP packaged DC-DC converter. Copper welds, nylon insulated ferrite, and polyesterimide insulated magnet wire were decapsulated without damage, allowing failure analysis of a miniature transformer and its associated welded leads.
Investigation of Microstructure Change on Ni-based UBM Systems in Lead Free Solder
Authors: Chun Tan Teck , Hang Tung Chih , Chong Chai Tai 
Published: December 2020

Abstract
The effect of interfacial reaction of Ti/Ni(V)/Au under-bump metallisation (UBM) systems in Pb free solder had been investigated. The objective was to examine the microstructure change and intermetallic formation of Ni-based UBM during isothermal annealing in lead free solder as well as to understand its impact on the UBM failure mechanism. Studies revealed that after IR reflow, spalling of Ni-Sn compound from the UBM took place. A layer of Ni-Sn-V was found to have form in the UBM. The formation of Ni-Sn-V layer was believed to have an impact on the failure mechanism of the Pb free solder. Studies also showed that doubling the Ni layer thickness in this UBM system did not have significant improvement to the overall integrity of the solder joint. However, samples with electroless Ni(P)/Au UBM in lead free solder showed relatively good thermal properties. No major change in the intermetallic composition was observed. More details on the microstructure change during thermal aging of the UBM systems were presented in this article.
Backside Hot Spot Detection
Authors: Beaudoin Félix , Perdu Philippe , Desplats Romain , de Morais Lionel Dantas , Crepel Olivier , Goupil Christophe , Haller Gérald , Beauchêne Thomas , Lewis Dean 
Published: December 2020

Abstract
Defects localization from the IC’s backside using hot spot detection techniques is discussed. Simulations are used to validate the applicability of hot spot detection from the silicon backside and to determine the optimal experimental conditions. The effects of the dissipated power, the substrate thickness and the defect position relative to the chip area are studied. These simulations take into account the thermal dependence of the silicon thermal conductivity. Transient simulations are also performed to evaluate the effect of modulating the power on the backside temperature difference. Backside Liquid Crystal Microscopy as well as Infrared Thermography and Thermal Laser Stimulation results on defective ICs are presented.
Infrared Microthermography for Integrated Circuit Fault Location; Sensitivity and Limitations
Authors: Kiefer S. , Nair M. , Sanders P. , Steele J. , Sutton M. , Thoma R. , Wilson S. , Albright G. , Li C. , McDonald J. 
Published: December 2020

Abstract
In order to understand spatial and temperature resolution limits of an infrared microscope used for fault location in semiconductor devices, numerical models and bench methods are correlated and discussed. Results clearly show fault identification capability in the sub-micron realm and “hot-spot” resolution of a few tenths of a degree K.