bluuebunny/crossref_metadata_2025 huggingface dataset:
81‐3: One‐to‐One Microlens Array with Pixel for Full‐Color Organic Light‐Emitting Diode Display
Authors: Lu Tianhao , Li Xiaohu , Jin Qian , An Che , Yan Yutong , Yang Ming , Liu Wenqi , Li Liuqing , Liu Yujie , Huang Wei , Jiao Zhiqiang , Yuan Guangcai , Dong Xue
Published: July 2024

In this study, we successfully accomplished a one‐to‐one micro‐lens array with pixel via printing technology on a hydrophobic film layer without pattern. By meticulous adjustments to the lens printing process and device structure, we achieved a notable increase in current efficiency exceeding 30% for RGB OELD.
86‐1: An Eye Tracking Method to Extend the Viewing Zone in Multiview 3D Displays
Authors: Surman Philip Anthony , Yao Zhenwei , Sun Xiao Wei
Published: July 2024

We describe the design and performance of a multi‐view 3D display system displaying an adjustable number of views. This uses an 8K panel and a simple eye tracking method to extend the viewing zones over a very large range and provides a multi‐view 3D display with high resolution and smooth motion parallax that gives the viewer good freedom of movement. The results are obtained from a system built around a 32" 8k monitor with a 45 lpi lenticular screen; it gives good image depth with motion parallax to a single user, with a viewing angle more than 60.
87‐3: The Study of Brightness Drop of AMOLED Based on LTPS Process
Authors: Qing Haigang , Wang Miao , Guo Yonglin , Jiang Zhiliang , Hu Ming , Qiu Haijun , Zheng Kening , Shi Bo , Shi Shiming , Yang DongFang
Published: July 2024

The phenomenon of brightness drop (B/D) during one frame period exist in OLED panel using LTPS process. We analyzed how TFT leakage current lead to B/D in conventional circuit, and we also found that hysteresis is another important reason for B/D. Meanwhile, lots of approaches to improving B/D are discussed.
89‐3: Invited Paper: An Investigation of Quantitative Measure of See‐Through Image Quality for Transparent Displays
Authors: Kwon Hyeok-Jun , Lee Sang-Bin , Lim Kyongho , Kang Dong-Woo , Jun WoongGi , Yoon Soo Young
Published: July 2024

To provide clear see‐through image quality is one of the most important performances of a transparent display, because of its see‐through capability. Purity is one of the quantitative measure can evaluate the see‐through image quality in terms of perceived blurriness. In this paper, the characteristics of purity are investigated. Experimental results indicate that the purity values have highly correlated with perceptual blurriness of see‐through images. Furthermore, the perceptual limit of purity value is also derived.
91‐1: Invited Paper: Micro‐LED Stamp Transfer & Repair Technology for Tiling Display
Authors: Wang Yan , Cui Yongxin , Xia Jiye , Cao Xuan
Published: July 2024

Micro‐LED technology is believed to be the next generation of display, which has attracted increasing interests from academia and display industry. Combined with the efforts of of panel makers, LED manufacturers, equipment and materials makers, the yield and performance of Micro‐LED is becoming more competitive over that of a few years ago. Stamp transfer is still the closest mass transfer technology towards the possibility of mass production of Micro‐LED. Along with more mature inspection and repair, slicing, driving and demura technology, Vistar has developed a full‐process solution for the fabrication of 102 inch large area splicing display, constructed with 4.78 inch Micro‐LED display modules. After the construction of the first Micro‐LED pilot line in Mainland China in Aug 2020, Vistar took another leap in the construction of the first Micro‐LED mass production line, which laid foundation in Sep 2023. It is a big step closer to a future of Micro‐LED filled with displays.
93‐4: Evaluation Method and Results for Measuring Stretchability of Two‐Dimensional Stretchable Displays
Authors: Lim Myung Sub , Park Chan Il , Jung Haeyoon , Min Sung Joon , Kim Taehyun , Song Jun Hyuk , Oh Yeonjun , Lee Injun , Jeong Yu Ra , Kim Dojoong , Kim Aesun , Lee Hyokang , Kim Gi‐Hong , Yang Joon‐Young , Yoon Sooyoung
Published: July 2024

We report a highly stretchable display panel capable of enduring extreme deformations including large curvature folding, fully folded deformation and stretching without any damage. We examined both uniaxial and multi‐axial stretching with the panel, and presented a method to calculate its stretchability. Our display panel exhibited areal stretchability of up to 45% strain and remained reliably functional through 10,000 repeated stretching cycles at 20% uniaxial tensile strain. By demonstrating the ability to withstand extreme deformations while maintaining structural integrity, this platform showed strong potential for use in a variety of stretchable displays.
P‐8: Distinguished Poster: Realization of Dynamic Local Refresh on LCD with Novel Partial Scan GOA
Authors: Chen Dongchuan , Yang Tao , Shao Xibin , Liu Dong , Miao Yingmeng , Ma Wenpeng , Zhang Yinlong , Liao Yanping , Lee Seungmin , Wang Zhangtao , Qu Yingying
Published: July 2024

This paper presents a novel partial scan GOA architecture with gate and cascade scan separated output (GCSS‐GOA). Combined with a newly designed TCON IC and IP, dynamic local refresh at any position and with different refresh rate at different area on LCD panel are achieved. The power consumption of GOA and data drivers can be reduced by up to 50% respectively.
P‐13: Excessive Oxygen induced Threshold Voltage Shifts in High Mobility Top‐Gate PrIZO TFTs
Authors: Dong Yuhua , Ge Shimin , Cai Zhihui , Yuan Dong , Yu Mingjiue , Pan Zikang , Li Shan , Park David , Xie Zhongjing , Xiao Juncheng
Published: July 2024

The top gate self‐alignment (TGSA) Praseodymium‐doped indium zinc oxide (PrIZO) thin film transistor (TFT) was fabricated with different process condition in our production line, and high field effect mobility of 40.83 cm2 V‐1 s‐1 was obtained by regulating the GI and ILD parameters. At the same time, the devices show excellent stability with PBTS of 0.52 V and NBTIS of ‐0.9 V, indicating its potential in overcoming the trade‐off between mobility and reliability.
P‐14: High Mobility and High Light Stability Oxide Back‐Channel‐Etched TFT and Application to High‐End LCD NB Production
Authors: Huang Jie , Yuan Guangcai , Li Zhengliang , Ning Ce , Huang Rui , Meng Detian , Li Feifei , Fu Xu , Hu Hehe , Huang Zhonghao , Wu Xu , Ning Zhiyong , Wang Rui , Yang Yutong
Published: July 2024

A high mobility (29 cm2 /Vs) and high light stability oxide thin‐film transistor (TFT) with 8 mask back channel etched (BCE) structure has been fabricated. Remarkable enhancement in negative gate‐bias thermal stress with illumination has been achieved, resulting in a threshold voltage (Vth) shift of ‐0.01 V after 1 hour. A 16.0 inch WQHD 240Hz LCD NB has been developed using high mobility and high light stability oxide TFT in G8.5.
P‐17: Development of Vertical Oxide Channel Thin Film Transistor Based on Hard‐Mask Etching
Authors: Tong Binbin , Huang Rui , Wang Lizhong , Zhang Jinchao , Zhou Tianmin , Gu Pengfei , Ning Ce , Yuan Guangcai
Published: July 2024

Avertical oxide semiconductor thin film transistor (VTFT) with channel lengthof 0.4 μm wasdeveloped in our work. This VTFT has a small footprint, which isconducive to achieving higher resolutiom. In this work, we produced a VTFT by usinga hardmask etching process and designed different vertical structures, such asslope, hole, etc. The device achieved an on‐state current of 20.6 μA (normalized with width) and an off‐state current below 1 pA.
P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display
Authors: Luo Chuanbao , Yao Jiangbo , Ding Wei , Zhou Kai , Liu Juan , Liu Nian , Zhan Xiaojun , Zhang Xin
Published: July 2024

The stacked structure thin film transistors (TFT) has caused the widespread attention to achieve high mobility and reliability simultaneously. To ensure the stacked structure TFT application to mass production, it is critical to reduce the number of mask‐count. In this paper, 8‐mask‐count stacked TFT‐array process using the first semiconductor layer overlapped with the source and drain layer directly, which is the first layer on the glass substrate, is studied. By adopting this novel process, the device mobility is 25.4 cm2/Vs, which is more than twice that of conventional top‐gate self‐aligned a‐IGZO device. Besides, the ΔVth under the positive bias stress of 30V and negative bias temperature illumination stress of ‐30V for 1 h is +0.41V and ‐0.13V, respectively, achieving the stability to the level of a‐IGZO TFTs.
P‐22: Fabrication of Ultra Short Channel Oxide Thin Film Transistors
Authors: Yao Jiangbo , Liu Nian , Liu Juan , Luo Chuanbao , Zhang Xin
Published: July 2024

By utilizing flat display panel manufacturing equipment and innovative techniques, we have successfully developed short channel Top‐gate amorphous InGaZnO4 thin‐film transistors (TG a‐IGZO TFTs) at Gen4.5. Despite the challenge of facing issues with the lateral diffusion of hydrogen during process and short channel effects, we managed to optimize the uniformity and drain‐induced barrier lowering with the novel structure of TFTs. After optimizing the device structure, we have achieved short channel TFTs with channel length of 1.3um, Vth of ‐ 0.03V, mobility of 9.77 cm2 /Vs, and DIBL of 29mV/V, and successfully make a demo of 7.1inch miniLED with the ultra short channel TFTs.
P‐25: Tailoring the Threshold Voltage Control of Oxide Thin‐Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure
Authors: Han Jung Hoon , Shin Dong Yeob , Sung Chihun , Cho Sung Haeng , Ju Byeong‐Kwon , Chung Kwun‐Bum , Nam Sooji
Published: July 2024

The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin‐film transistors (TFTs), we propose heterojunction structure of p‐type Tellurium (Te) and n‐type Aluminum‐Doped Indium‐Zinc‐Tin‐Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single / double deposition of the heterojunction Te layer.
P‐222: Late‐News Poster: Performance of Double Gate P‐ch Cu‐MIC Poly‐Ge TFTs on Flexible Plastic Substrates and Their Feasibility for CMOS Inverter
Authors: Kurihara Akito , Suzuki Sho , Tsuchiya Toshiyuki , Okuyama Tetsuo , Hara Akito
Published: July 2024

In this study, p‐ch double‐gate (DG) poly‐Ge thin‐film transistors (TFTs) were fabricated at 385 or 400 °C on flexible plastic bonded to glass substrates. The TFTs were crystallized through metalinduced crystallization using copper (Cu‐MIC). They had an Ion/Ioff ratio of 6 × 103 and a mobility of 8.3 cm2/Vs after the plastic was peeled from the glass substrate. To verify the feasibility of these DG Cu‐MIC poly‐Ge TFTs for complementary metal‐oxide semiconductor (CMOS) on plastic substrates, n‐ch and p‐ch TFTs were fabricated on a glass substrate at 400 °C, which was a suitable temperature for a plastic substrate, and a CMOS inverter was operated after the TFTs were wired.
P‐37: Enhanced Text Display with Balanced Anti‐reflection and Anti‐glare Design
Authors: Yang Song , Zeng Yang , Yao Qijun , Lu Feng , Lyu Bojia , Li Shaohua
Published: July 2024

Influences of anti‐reflection (AR) and anti‐glare (AG) components on display performance were studied, especially for the scenario of indoor text reading. Both ambient influence and display clarity were analyzed in search of a cost‐effective combination of the two components. A design method based on human eye sensitivity curves was developed for the optimization of AG component.
P‐41: The diffraction simulation of FFS VR LCD Panel
Authors: Cheng Wei , Qian Deng , Yuan Jianfeng , Li Zhifu
Published: July 2024

In this paper, based on the perspective of optical diffraction, we use matlab as a tool to analyze the possible causes of vertical stripe interference caused by optical diffraction in VR display. By careful comparison of captured images with different random components, we find that the variation of Metal & BM CD will be the main contributors to the diffraction‐induced problem.
P‐60: Automotive Dual Cell microZone™ LCD Gamma Control Algorithm
Authors: Weindorf Paul , Hayden Brian , Rodas Ayari
Published: July 2024

Consumer experience with high performing mobile device displays sets high expectations for the automotive market in contrast, color performance and brightness. OLED based displays continue to experience difficulties in penetrating the automotive display market primarily due to image burn at high luminance operation and high costs. The microZone™ LCD is an alternative display configuration that can meet the desirable properties of OLED displays while providing high luminance at high temperature operation without image burn in.
P‐64: Research on Displayable Scheme of Camera Under Panel Based on Automobile Display
Authors: Liu Sen , Hu Xinpei , Wu Xiaomin , Zha Guowei , Liu Fancheng , Hou Shaojun
Published: July 2024

CUP (Camera Under Panel) is applied to the automobile and can identify the driver's identity, monitor the driver's fatigue, attention, and monitor dangerous driving behaviors. The commonly used blind hole technology now leads to the inability to display the camera hole area. Therefore, we proposes a scheme for camera under panel applied to automobile, which is based on the Mini LED backlight structure design to achieve full screen display. At the same time, optical simulation analysis and related experiments were conducted to verify the feasibility of the scheme.
P‐69: Cause Analysis of Water Ripple Issue on Charging‐ratio Sensitive LCD Panels Based on TCON Timing Control Theory
Authors: Xiao Lijun , Zhang Junmin , Jiang Peng , Lv Yanwei
Published: July 2024

Water Ripple is the fine rolling textures phenomenon that occurs on large size, high resolution and high refresh rate LCD panels. It is a tough issue in the field of high‐end TV. The root cause is that such panels are too sensitive to pixel charging‐ratio. To ameliorate the problem, this paper analyzed the causes of charging‐ratio fluctuation from the perspectives of cross clockdomain conversions, display transport protocols and SSC influence, based on the TCON timing control theory. Then a method was proposed to cover the issue. The results show that at least one or two levels of improvement can be achieved. This study can provide an idea for the solution of water ripple, which is important to actual products.
P‐75: Extreme Low Power a‐InGaZnO TFT Scan Driver with Extra Clock Signal Modulation
Authors: Kim Hyunwoo , Moon Jinho , Kim Dongseok , Lee Hojin
Published: July 2024

In this paper, a scan driver with extra clock signal using amorphous indium‐gallium‐zinc‐oxide (a‐InGaZnO) thin‐film transistors (TFTs) is proposed. Extra clock signal with variable frequency modulates the pull‐down unit of scan driver in order to reduce the power consumption. Proposed scan driver is suitable for operating extreme low‐power displays such as always on display.
P‐76: The Influence of Bending FFC Transmission Line on High‐Speed Signal Channels
Authors: Deng Zaiyong , Zhu Hongpeng , Liu Yuqi , Chen Dongwen , Song Lijia
Published: July 2024

Generally, display devices interconnect FFC transmission lines with circuits to form a transmission line network system to achieve data communication between Tcon and Driver. Due to the limitations of the external shape and internal space structure of the display device, the FFC transmission cable presents a curved shape from 0 to 180 degrees during the wiring process. Under the action of spatial electromagnetic fields, the display device will involve the field‐circuit hybrid problem of electromagnetic coupling of the FFC transmission line's bent line and circuit conduction interference, which will cause severe electromagnetic interference(EMI), resulting in deterioration of the high‐speed channel signal at the receiving end and even inability to correctly restore and decode the signal, thus causing signal distortion, which in turn leads to display image distortion or pixel loss.
P‐79: Calibration Data Methods for In‐Cell Integrated Ambient Light and Color Temperature Sensor Data
Authors: Chung Yi-Ting , Huang Yu-Hsiang , Shih Ding-Teng , Peng Chih , Chou Chun-Yi
Published: July 2024

In general, the algorithm for in‐cell ambient light and color temperature sensor was optimized by the golden modules. However, there are differences between the modules. This implies that if we do not normalize the data from modules, there will inevitably be a significant error. To this end, three calibration data methods for in‐cell integrated ambient light and color temperature sensor data are proposed. With these methods, the illuminance error rate can be reduced to less than 6% and the color temperature absolute error can be reduced to less than 150.
P‐248: Late‐News Poster: Image Upscaling Techniques for IT Products; Evaluation and Analysis
Authors: Kim Jinpil , Choi Kyungmin , Lee Wonbok , Park Jongwoong
Published: July 2024

This paper introduces an upscaler technology which is proven to be effective in improving power reduction for IT products at the system level. Proposed upscaler algorithm utilizes Lanczos and bilinear interpolation both of which are widely used in currently existing upscaler designs on the industry, and carefully analyzes the image distortion caused by 2x scaling of the input image and manipulates the possible artifacts by considering the key performance criteria in the up‐scaling. Our experimental results show that image quality distortion due to the proposed scaling algorithm is significantly improved while the small details in the images are preserved at most thanks to the combination of “blended upscale” and “edge enhancement” sub‐functions in the proposed upscaling design. According to our subjective evaluation, we got the average score of 4.39 over 15 persons with 21 images from well‐known image benchmark suites.
P‐249: Late‐News Poster: A Low Power Digital Logic Structure for High Resolution and High Frame Rate OLEDoS Micro Displays
Authors: Jeong Seoyeong , Jang Junhyuk , Lee Kichang , Lim Jaemyung
Published: July 2024

This paper proposes a digital logic circuit in the source driver for OLEDoS micro display which uses a novel data signal tree structure with clock gating logic to reduce power consumption. The proposed structure for 4096×4096 (4K) 144 Hz micro displays was verified using a CMOS 110 nm process. The power consumption was reduced by 69.6 % compared to the conventional data signal tree structure, enabling a low‐power design.
P‐83: The Development of Mask‐Reduction Technology in LTPS LCD
Authors: Lan Xuexin , Liu Bingping , Lin Chunrong , Zheng Lihua , Huang Yanshan , Chen Shaoyun , Yang Xianyan
Published: July 2024

In order to gain a price advantage in the competition with AMOLED and a‐Si LCD, the manufacturing process of LTPS LCD is simplified. Several mask‐reduction technologies such as SALDD, LSM lessness, and PLN lessness are developed, and LTPS LCD with 9‐mask, 8‐mask, and 7‐mask technologies has been mass produced.
P‐90: Automatic Design Optimization Platform for FMM Mask Dummy Pattern Simulation Based on AMOLED Display Screen
Authors: Chen Shengxiong , Ma Yangzhao , Huang Wei , Dun Dongliang , Xia Zhiqiang , Yang Kang , Lee Bonggeum
Published: July 2024

In this paper, the automatic design optimization platform for FMM dummy pattern simulation based on AMOLED display screen has the advantages of short time, high precision, simple process and wide range of design combination. Specifically, the project simulation design time is reduced by half, the error rate in the simulation design process is reduced from 10% to 1%, the design combination range is increased by more than 10 times, and the FMM mask compensation accuracy is increased by 10%. Automated design optimization platform is helpful to improve product yield and save cost.
P‐98: High‐Quality OLED Display Panel Using Optimized IGZO Deposition Process through Eliminating Sputter Target Mura
Authors: Zhao Ce , Choi YongHo , Fang Jingang , Wang Ming , Yan Liangchen , Yu Jianwei
Published: July 2024

Target Mura occurs in sputter using separated target at IGZO deposition. This study was evaluated to improve the problem of poor panel quality and reliability for Target Mura. To improve OLED panel quality of a‐IGZO TFT we have been optimized the sputter deposition method and the annealing process of IGZO/Gate Insulator layer. Improved panel quality by completely eliminating sputter target mura and we achieved to highly reliability in Image Sticking. Also, we achieved that the uniformity of threshold voltages of a‐IGZO TFTs on Gen. 8.5 glass is approximately 0.77V by using optimized TFT process. In addition, improved top gate IGZO TFTs backplane of the 55 inch 4K UHD OLED TV could be demonstration.
P‐100: Control of Vacuum Pressure in Vacuum Drying Process for Uniform Film Formation of Inkjet‐Printed OLEDs
Authors: Cho Kwan Hyun , Noh Youngwook , Lee Sang Youn , Hwang Jun Young
Published: July 2024

To enhance the performance of inkjet OLED/QLED devices, achieving a uniform film during the drying process is crucial. This study aims to improve both intra‐pixel and inter‐pixel uniformity in the drying process of inkjet printing technology. We conducted a comprehensive analysis of drying characteristics under various mixed solvent boiling points in nitrogen(N2) conditions. Additionally, during vacuum drying process, we carefully studied the characteristics based on adjustments in vacuum pressure and heating. Our focus was on analyzing the thickness profiles of dried pixel arrays in different positions: top, center, bottom, and left parts. Through the optimization of vacuum drying using solvents with a high boiling point (BP), we successfully achieved uniform film formation within and between pixels in inkjet‐printed pixel arrays.
P‐104: Corrugated Silicon Nitride Masks with Enhanced Mechanical Strength for Patterning RGB‐Stripe OLED Microdisplays
Authors: Dong Shou-Cheng , Yang Jiye , Tam Bryan Siu Ting , Tang Ching W.
Published: July 2024

Corrugated silicon nitride masks (SiNMs) with improved mechanical strength are developed for patterning OLED microdisplays. The corrugations in the nitride membrane significantly increase the rigidity of the mask and reduce sagging, enabling 3000‐ppi slot apertures for patterning RGB‐stripe pixel layouts that are normally not achievable by fine metal masks.
P‐106: A Based Machine Learning Model for the Prediction of Initial Gamma Values for OLED Panels
Authors: Shen Hao , Su Zhifu
Published: July 2024

Gamma tuning is an important step in producing high‐quality OLED panels; in order to ensure the quality of OLED panels, OLED panels usually need 9 to 12 gamma curves at one frequency, covering the entire brightness range of the panel. And there are several adjusting nodes (generally 15~27) on each gamma curve. The current gamma tuning needs to calibrate each node through external optical equipment and stores them in the display IC. However, the initial values of the register adjusted by the current method is less accurate. The method is proposed for gamma values prediction based on machine learning that improves accuracy greatly.
P‐111: A Machine Learning Perspective for the Optimization of Annealing Parameters in Solution Processed Thin Film Devices
Authors: Wang Jiankai , Chen Xi , Wang Xiao , Xu Lihai , Tan Shuhui , Tang Jun , Chen Wei , Tang Haodong
Published: July 2024

This work adopts machine learning to refine the annealing process in solution‐processed thin films, such as QDs, perovskites, and organic semiconductors. The annealing temperature and time of PbS QD thin film is optimized using a machine learning algorithm. This method offers a systematic approach to determine the optimal annealing parameters, surpassing the traditional, less‐efficient methods. This adaptive model minimizes human bias, handles complex nonlinear relationships, and capable of optimizing multiple parameters simultaneously. By introducing machine learning algorithm, this method provides a universal and effective strategy for the optimization of parameters during the fabrication of thin films.
P‐119: Evaluating Seamlessness: A Quantitative Index for Transparent Tiled MicroLED Displays
Authors: Tsai YuTang , Huang MinChun , Li ChangHung , Chiou ShengYuan , Tien KunCheng , Fang YenWen , Lee MingHsien , Shao MingLiang
Published: July 2024

The objective of this study was to develop a method for accurately evaluating the quality of splicing seams in tiled transparent MicroLED displays, replacing subjective human observation with a quantitative indicator. The study utilized the validated Structural Similarity (SSIM) index method, which enabled precise guidance in the production process and established common measurement standards for defining splicing seam quality. This study would significantly contribute to the advancement of panel technology development by providing a standardized and objective evaluation approach for assessing splicing seam quality.
P‐146: Research on Optical Model of Quantum Dot Color Conversion and Blue Backlight Device Architecture
Authors: Cui Ying , Wang Linlin , Shen Yongqi , You Juanjuan , Bian Menghua , Zhang Yue , Hu Chunjing , Quan Wei , Bo Bin , Yu Donghui , Sun Li , Shi Shoulei , Yan Guang , Shih Huai-Ting , Yu Jianwei
Published: July 2024

Due to its high quantum yield and unique spectral characteristics, quantum dots (QDs) color conversion materials have attracted great attention in the application of luminescent display products. However, there is a lack of effective optical model for QD color conversion materials, especially for the propagation and distribution of light, when the QD ink contains scattering particles. In this paper, a full‐view optical model of QD conversion and blue backlight device architecture is established. The model can not only output the spectral information in the front view, but also predict the spectral information of the QD color conversion device in other different views. At the same time, the effects of QD concentration, thickness, particle size and refractive index on the luminous efficiency of the device structure are also studied by using this optical model. On the other hand, the influence of conversion efficiency of QD and EL backlight on the power consumption and lifetime of QD products is also studied by using this optical model. The model can realize the output of the optical influence on the future products by the parameters related to QD color conversion materials and backlight without actual device fabrication, which can greatly reduce time and labor cost.
P‐153: 8‐inch. Zero‐Defect Germanium Wafers for AlGaInP μ‐LEDs
Authors: Meulemeester Bendix De , Dessein Kristof , Vanpaemel Johannes , Peetermans Annick
Published: July 2024

8′ Ge wafers were developed as the starting substrate for lattice‐matched hetero‐epitaxially grown As‐free AlGaInP layers for 650nm RED μ‐LEDs. This paper focusses on the challenges that we have encountered and the innovations that were needed to develop 8′ Germanium wafers for Arsenic free AlGaInP red μ‐LEDs. The results of germanium 8′ 0EPD crystals and low LPD/COP wafers from our pilot 8′ wafer line, will be shown. This paper also includes a comparison with Si and GaAs.
P‐162: Green solvent for fabricating inverted QD‐LED
Authors: Kim Hyo-Bin , Choi Eun-young , Yoo Jae-In , Kang Sung-Cheon , Song Jang-Kun
Published: July 2024

Quantum‐dot light emitting diode (QD‐LED) displays have attracted great attention because of their high potential as a future display technology. The solution processability is also regarded as an important advantage for low‐cost manufacturing capabilities. However, the use of toxic and environmentally hazardous organic solvents is the dark side of solution processable QD‐LEDs. Chlorobenzene, chloroform, 1‐4 dioxane, and 1,2‐dichlorobenzene are representative toxic solvents for the manufacture of QD‐LEDs, and these are mainly used as solvents in the hole transport layer (HTL). Therefore, it is important to find an environmentally friendly solvent for (HTL). In this study, we report a new methodology for finding environmentally friendly solvents, that have good processability, and have solvent orthogonality with adjacent layers.
P‐163: A Novel Method for Evaluating Short‐Range Uniformity of Micro‐LED Display
Authors: Zhai Yingteng , Hu Yuqi , Li Xi , Hao Zhiyang , Lyu Bojia
Published: July 2024

We proposed a novel method for evaluating short range uniformity. It was used to compare the performance of the micro‐LED display which was driven by PAM method and PAM+PWM hybrid method respectively. The results showed that the PAM+PWM hybrid driving method had significant performance advantages, which corresponded to the subjective visual feeling.
P‐164: Highly Efficient Quantum Dot Light‐emitting Diodes Enhanced via Ultraviolet Postprocessing
Authors: Ma Huanyu , Lu Zhigao , Zhang Xiaoyuan , Liu Yang , Li Dong , Chen Zhuo , Li Yanzhao , Li Xinguo , Xu Xiaoguang
Published: July 2024

Recently, low efficiency and stability due to unbalanced carrier injection remain urgent problems in inorganic quantum dot light†emitting diodes (QLEDs). To address these issues, the device was irradiated with ultraviolet light in this study, which improved the interface contact. This resulted in the smaller electron potential barrier, increased hole injection and more balanced carrier injection in the device. Ultimately, the device efficiency was improved, and the operating lifetime of the device was increased by ~91†fold.
P‐221: All Inkjet‐Printed Inverted Electroluminescent Quantum Dot Light Emitting Diode Display Based on Metal Oxide Thin Film Transistors
Authors: Kim Jiyoon , Kim Hyeonsik , Kim Yool Guk , Im Heewoon , Nam Yuk-Hyun , Lee Sangho , Park Jaehyun , Ha Jaekook , Yoon Yeo-Geon , Lee Changhee
Published: July 2024

A 12.4‐inch inverted cadmium‐free electroluminescent quantum dot (QD) light emitting diode (LED) display panel based on metal oxide thin film transistors (TFTs) is demonstrated. The backplane of our panel is fabricated by using multiple steps of photolithography processes, and pixel/scan driver circuits are composed by n‐type indium‐gallium‐zinc oxide TFTs. Especially, each sub‐pixel has internal compensation circuit which compensates the threshold voltage of its own driving TFT. Different from the conventional structure, since our QD LEDs have inverted structures, electroluminescent layers from the electron injection layer to the hole injection layer are constructed by sequential inkjet‐printing processes. Our inverted electroluminescent QD LED display based on metal oxide TFTs is very promising structure for premium large‐format displays for the next generation due to its superb performance and cost‐effectiveness.
P‐167: A simulation model for charged particle motion in INK system
Authors: Cui Xiaorong , Zheng Haoliang , Xiao Li , Guo Yuzhen , Zhao Jiao , Zhang Chenyang , Gao Lipeng , Feng Xuan , Liu Dongni , Xuan Minghua , Chen Xiaochuan , Yuan Guangcai
Published: July 2024

This paper provides a simulation model for the electronic paper display device, the model can quickly and efficiently simulate the initial steady state of the electronic ink system, thus improving the efficiency of device development. It mainly includes the following contents: Obtaining the parameters of the model, then the built‐in electric field strength is calculated through the model parameter information and the pre‐ constructed built‐in electric field model. The motion of each charged particle is simulated to obtain the simulation relationship between the display gray scale and the applied electric field force. Finally, it make various charged particles reach the force equilibrium state, so as to realize the simulation of the voltage‐gray scale relationship of electronic ink system.
P‐179: Design of the Pixel Electrode to Improve the image sticking in FFS‐LCD
Authors: Wang Peng , Lan Chenping , Zhao Hongwei , Zhu Lan , Lin Wenpeng , Zhong Caijiao , Lai Guochang , Yang Xianyan
Published: July 2024

In this paper, a series of slit angle designs are designed to achieve the improvement of long‐term image sticking properties. The excellent image sticking of high slit angle design are attributed to the small flexo‐electric effect which is explained by using simulation and theory mode analysis, where the flexo‐electric maintains a lower level and the electric field provides a minor deformation. This novel pixel electrode design which optimizes the performance of image sticking, provides a new paradigm for the high picture quality of liquid crystal display.
P‐188: Analysis and improvement of TV product slapping bright spot defects
Authors: Wang Jing , Yang Zhi , Cheng Shi , Fu Junjie , Sheng Zimo , Xie Bin , Feng Jun , Gao Xiangyu
Published: July 2024

In order to improve "slapping bright spot" defect that frequently occurs in the client of TV products, this paper clarified that the defect is different from the dropping red spot caused by PS shift. It is an irregular tiny vacuum bubble caused by incomplete filling of liquid crystal (LC) due to poor wetting on PI surface. With the help of effective simulation and characterization techniques, the defect can be completely eliminated through process or OC material optimization. The follow‐up can still continue to conduct in‐depth research from OC material system and LC material monomer, which gives clear direction and reference basis for new products.
P‐189: Distinguished Poster: Polarization Independent Liquid Crystal Device with Multi‐Microdomain Twist Structure
Authors: Tang Mingyuan , Huang Kai , Zhang Yumeng , Lu Jiangang
Published: July 2024

The polarization‐independent liquid crystal (LC) phase modulators can greatly improve the efficiency and reduce the complexity of the optical system. However, it is difficult for the LC phase modulator to achieve both good low‐loss modulation and polarization‐independent properties. A LC phase modulator of single layer multi‐microdomain orthogonal twisted (MMOT) structure is proposed which may achieve good polarization independence and low loss in different phase depth. A lightcontrolled azimuth angle (LCAA) process based on the rotation effect of cholesteric liquid crystal (CLC) is developed for the fabrication of the single layer MMOT structure. The measurement results showed that the single layer MMOT LC phase modulator may get very low polarization dependence, about 3.52% under 2Ï€ phase modulation depth, with low loss. The device shows good potential application in optical communication, wearable device, and display.
P‐191: Application of high precision PS technology in liquid crystal display
Authors: Xue Dapeng , Cao Zhanfeng , Fang Zheng , Wu Huili , Li Shaohui , Yan Yuwei , Zhang Zhen , Xie Changhan
Published: July 2024

For high PPI LCD products, PS size has an increasing influence on the opening rate. This paper proposes a high precision PS technology to maximize the opening rate.
P‐210: Photolithography Patterning of Organic Light‐Emitting Diodes Using Solvent Resistant Electron Transport Materials
Authors: Yu Hyunjin , So Eun Yeong , Eun Kyunghyun , Jung Byung Jun , Kim Myungwoong , Lee Jin-Kyun , Lee Jun Yeob
Published: July 2024

In this paper, we develop a novel approach to achieve ultra‐high resolution in organic light‐emitting diodes (OLEDs) through a photolithography patterning process. It is important to apply a solvent resistant electron transport layer (ETL) in the photolithography pattering of OLED because of solution coating process of photoresist on the ETL. Therefore, a solvent resistant ETL named 2,7‐bis(4,6‐diphenyl‐1,3,5‐triazin‐2‐yl)‐9,9 ′ ‐spirobi[fluorene] (SBF‐Trz) was developed and employed as the ETL of OLEDs. The SBF‐Trz demonstrated excellent solvent resistance during photolithography process and enabled device performances comparable to those of the conventional OLED without any photolithography process. It was found that the SBF‐Trz ETL is appropriate as the ETL of the OLED patterned by photolithography due to good electron transport property, good stability, and good solvent resistance.
P‐215: Emission Mechanism‐Tunned Fused Indolo[3,2,1‐jk]carbazole‐based Multiple Resonance Emitters for Long Device Operational Lifetime
Authors: Kang Jihoon , Jeon Soon Ok , Lee Ha Lim , Kim Seung Chan , Lee Jun Yeob
Published: July 2024

In blue organic light‐emitting diodes (OLEDs), the importance of terminal emitters, which determine device operational characteristics, has been grown. Although multiple resonance (MR) type emitters can provide high color purity and high device efficiency, the high triplet energy (ET) of emitters often cause issues on long‐term device operation. In this work, as a solution to implementing stable operation of blue OLEDs, novel emission‐mechanism‐tuned MR type emitters were developed based on fused indolo[3,2,1‐jk]carbazole framework. The molecular structural changes effectively stabilized the ET while maintaining the narrow emission bandwidth. The fabricated blue fluorescent OLED recorded a highquantum efficiency in deep‐blue region of CIEy of 0.075 and device lifetime twice longer than a typical boron type dopant based device. This research establishes the emitter design strategy for extended blue OLEDs.
P‐217: Improvement of low gray scale black spots by HTM morphologies
Authors: Xu Chuanzhi , Zhang Tingting , Gao Xiaoyu , Hu Siming , Xie Zhengfang , Wu Yong , Zhu Xiujian
Published: July 2024

An SPC structure and test model for improving low brightness and low gray scale black spots: the structure can effectively improve the SPC crush problem and the impact of the crush on the display, and the model can effectively reproduce the problem heart.
P‐219: Research on the Direction of Luminance Modulation at Small Angles Based on Micro Lens
Authors: Li Yao , Fan Wenzhi , Yu Zhonglong , Xu Weiqi , Shen Ying , Li Hui
Published: July 2024

The study investigated the variations in luminance of active‐matrix organic light‐emitting diodes (AMOLED) when viewed at small angles, employing different micro lens arrangements. By examining the micro lens array (MLA) structure, we analyzed how luminance behaves at various angles. Concurrently, we explored the alignment of red, green, and blue (R/G/B) pixel apertures with the micro lens placement, aiming to achieve precise luminance modulation for acute viewing angles.

Initially, micro lens arrays are crafted by utilizing materials with varying refractive indices above the pixel aperture, ensuring total internal reflection of light at thejunction between materials of high and low refractive indices. This arrangement also alters the emission angle of light. Within this architecture, the critical angle — determined by the disparity in refractive indices — and the variance in the angle at the reflective interface are crucial in influencing light emission reflection.

Furthermore, we explored how the spacing of graphic openings with low refractive indices influences the angle of light emission. This spacing affects the reflection angle, as it is not produced by a singular interface but rather by a composite of multiple angles. The size of the pixel apertures and the spacing of these openings cause the point of total internal reflection to vary, altering the deflection angle of light. Thus, the design of pixel openings and the external expansion is crucial to controlling the light emission angle.

Lastly, we examined the influence of the reflective interface and the external expansion design on the light output angle. This analysis highlighted the enhancement of light output at narrow angles and provided strategies to minimize luminance fluctuations at such angles, contributing to the development of high‐precision luminance control in AMOLED displays.
P‐254: Late‐News Poster: Design Optimization and Considering Mass Production of 2D Hole Arrayed Double Anode Structure for Improving Outcoupling Efficiency of OLEDoS
Authors: Lim Dogi , Park Jun-Young , Lee Seungwon , Bi Jian Cheng , Park Seonghyeon , Song Junbeom , Lee Ji-Sung , Lim Hyejung , Ju Byeong-Kwon
Published: July 2024

AR, VR Headset for “metaverse” is one of candidates to widen human life experiences with virtual reality. Display requirement for headset is the high resolution as to 3000ppi that needs to enhance outcoupling efficiency of OLED (OLEDoS). We optimized 2D hole arrayed double anode structure for mass production with materials, thickness of anode and interlayer, process variation of etching top anode, and particles in double anodes. Outcoupling efficiency of optimized structure is improved to 1.377 folds than conventional TE‐OLEDs. We hope that this study promotes more approaches to excite SPPs of anode.
P‐258: Late‐News Poster: New Approach for Achieving Perfect Black of WOLED
Authors: Kim Minhyung , Roh Sudong , Lim Chungsun , Lee Taerim , Bae Sungjoon , Shin Woosup , Lee Hyeonwoo
Published: July 2024

OLED displays have excellent black characteristics as a self‐emitting device, but in the bottom emission structure, reflections from external light are generated by the use of highly reflective metal electrodes. In order to control this, an appropriate anti‐reflective function for each wavelength has been given to the film to realize Neutral Black. In this paper, we would like to propose a new method to realize more neutral black and high clarity CR by adjusting the QWP and surface treatment of the pol layer and panel technology that affect the reflective properties.
P‐259: Late‐News Poster: ViPTM Based RGB Tandem OLED Display with a White Light Emission Current Efficiency over 134 cd/A
Authors: Li Mengzhen , Liu Bin , Pang Hui , Zhao Jing , Ma Shuyue , Lou Zhenhua , Sun Dawei , Ren Qiqi , Cai Minghan , Wang Hongyu , Song Wonjun , Lee CC , Zhu Xiujian
Published: July 2024

In this paper, we demonstrated a very competitive RGB tandem OLED based on ViP technology that showed low power consumption and long lifetime. Compared to the traditional single OLED for mass production, panels based on tandem OLED can reduce power consumption by 29% and increase lifetime by more than 3.3 times. In combination with ViP technology, 8% efficiency improvement was obtained by optimizing the light‐emitting layer positions of RGB tandem OLEDs and thickness of cathode and capping layer (CPL), respectively, achieving a white light emission current efficiency over 134 cd/A.
Identification and estimation of causal effects in the presence of confounded principal strata
Authors: Luo Shanshan , Li Wei , Miao Wang , He Yangbo
Published: July 2024

Principal stratification has become a popular tool to address a broad class of causal inference questions, particularly in dealing with non‐compliance and truncation by death problems. The causal effects within principal strata, which are determined by joint potential values of the intermediate variable, also known as the principal causal effects, are often of interest in these studies. The analysis of principal causal effects from observational studies mostly relies on the ignorability assumption of treatment assignment, which requires practitioners to accurately measure as many covariates as possible so that all potential sources of confounders are captured. However, in practice, collecting all potential confounding factors can be challenging and costly, rendering the ignorability assumption questionable. In this paper, we consider the identification and estimation of causal effects when treatment and principal stratification are confounded by unmeasured confounding. Specifically, we establish the nonparametric identification of principal causal effects using a pair of negative controls to mitigate unmeasured confounding, requiring they have no direct effect on the outcome variable. We also provide an estimation method for principal causal effects. Extensive simulations and a leukemia study are employed for illustration.
Multidimensional Engineering Induced Interfacial Polarization by in‐Situ Confined Growth of MoS2 Nanosheets for Enhanced Microwave Absorption
Authors: Luo Kaicheng , Xu Chunyang , Du Yiqian , Lv Xiaowei , Yang Xiaofen , Liu Min , Zhao Wenxuan , Zhang Chang , Lai Yuxiang , Liu Zhengwang , Che Renchao
Published: July 2024

Interface design has enormous potential for the enhancement of interfacial polarization and microwave absorption properties. However, the construction of interfaces is always limited in components of a single dimension. Developing systematic strategies to customize multidimensional interfaces and fully utilize advantages of low‐dimensional materials remains challenging. Two‐dimensional transition metal dichalcogenides (TMDCs) have garnered significant attention owing to their distinctive electrical conductivity and exceptional interfacial effects. In this study, a series of hollow TMDCs@C fibers are synthesized via sacrificial template of CdS and confined growth of TMDCs embedded in the fibers. The complex permittivity of the hollow TMDCs@C fibers can be adjusted by tuning the content of CdS templates. Importantly, the multidimensional interfaces of the fibers contribute to elevating the microwave absorption performance. Among the hollow TMDCs@C fibers, the minimum reflection loss (RLmin) of the hollow MoS2@C fibers can reach −52.0 dB at the thickness of 2.5 mm, with a broad effective absorption bandwidth of 4.56 GHz at 2.0 mm. This work establishes an alternative approach for constructing multidimensional coupling interfaces and optimizing TMDCs as microwave absorption materials.
Revisiting the Charging Mechanism of α‐MnO2 in Mildly Acidic Aqueous Zinc Electrolytes
Authors: Wu LangYuan , Li ZhiWei , Xiang YuXuan , Dong WenDi , Qi XiaoDong , Ling ZhenXiao , Xu YingHong , Wu HaiYang , Levi Mikhael D. , Shpigel Netanel , Zhang XiaoGang
Published: July 2024

In recent years, there have been extensive debates regarding the charging mechanism of MnO2 cathodes in aqueous Zn electrolytes. The discussion centered on several key aspects including the identity of the charge carriers contributing to the overall capacity, the nature of the electrochemical process, and the role of the zinc hydroxy films that are reversibly formed during the charging/discharging. Intense studies are also devoted to understanding the effect of the Mn2+ additive on the performance of the cathodes. Nevertheless, it seems that a consistent explanation of the α‐MnO2 charging mechanism is still lacking. To address this, a step‐by‐step analysis of the MnO2 cathodes is conducted. Valuable information is obtained by using in situ electrochemical quartz crystal microbalance with dissipation (EQCM‐D) monitoring, supplemented by solid‐state nuclear magnetic resonance (NMR), X‐ray diffraction (XRD) in Characterization of Materials, and pH measurements. The findings indicate that the charging mechanism is dominated by the insertion of H3O+ ions, while no evidence of Zn2+ intercalation is found. The role of the Mn2+ additive in promoting the generation of protons by forming MnOOH, enhancing the stability of Zn/α‐MnO2 batteries is thoroughly investigated. This work provides a comprehensive overview on the electrochemical and the chemical reactions associated with the α‐MnO2 electrodes, and will pave the way for further development of aqueous cathodes for Zn‐ion batteries.