Band structure of topological insulator Li(Na)AuS
Authors: Xu Jia-Ling , Jia Li-Yun , Liu Chao , Wu Quan , Zhao Ling-Jun , Ma Li , Hou Deng-Lu ,   Department of Mathematics and Physics, Hebei Institute of Architecture Civil Engineering, Zhangjiakou 075000, China,   College of Physics, Hebei Normal University, Shijiazhuang 050016, China
Published: December 2020

Half-Heusler semiconductors exhibit similar properties: the differences among their properties lie only in the fact that in ternary compositions the zinc-blende binary substructure does not provide the required 18 electrons, but this is improved by adding an extra transition metal, which restores the electronic balance. Half-Heusler ternary compound with 18 valence electrons under an appropriate uniaxial strain is a topological insulating phase. Most importantly, it is proposed that in the half-Heusler family, the topological insulator should allow the incorporating of superconductivity and magnetism. Using the first-principle full-potential linearized augmented wave method we study the band structure of a series of Li(Na)AuS topological insulators. The electronic and magnetic properties of Heusler alloys are investigated by the WIEN2k package. The exchange-correlations are treated within the generalized gradient approximation of PerdeweBurke and Ernzerhof (GGA), the local spin density approximation (LSDA), by using the modified Becke-Johnson exchange potential and the correlation potential of the local-density approximation (MBJ). Spin-orbit coupling is treated by means of the second variational procedure with the scalar-relativistic calculation as basis. We first determine the equilibrium lattice constants by calculating the total energy. The theoretical lattice constant of LiAuS full-potential GGA is 6.02 Å, which is somewhat greater than the result of pseudopotential(5.99 Å). The calculated equilibrium lattice parameter is 5.86 Å for LSDA. Most of the half-Heusler compounds have band inversion, and open the nature band gaps, but the gap of MBJ is not very good. Smaller uniaxial stress damages the cubic structure and also such a natural band gap of topological insulators. By applying uniaxial tensile stress until the equilibrium position is reached in all directions of the structure, the system band gap value is about 0.2 eV, which is consistent with the result obtained from the band gap of cubic structure equilibrium position. When uniaxial tensile stress is 41%, the system turns into a tetragonal structure, the equilibrium lattice constant is <i>a </i>= 5.2477 Å and <i>c</i>/<i>a</i> = 1.41. We use the method of substitution of homologous elements to ensure the properties of topological insulator of materials without changing the cubic structure, and open the bandgap of materials under the equilibrium lattice constant of the system, thereby improving the feasibility of experimental synthesis of topological insulator materials. Our results for the doping suggest that epitaxial strain encountered during experiment can result in electronic topological transition. We hope that the results presented here conduce to further experimental investigation of the electronic topological transition in half-Heusler compounds.