bluuebunny/crossref_metadata_2025 huggingface dataset:
ELECTRO-OPTIC ELIMINATION OF SPATIAL HOLE BURNING IN LASERS
Authors: Danielmeyer H. G. , Turner E. H.
Published: January 2004

By modulating the position of the standing-wave field inside the laser cavity electro-optically with certain discrete amplitudes, the population inversion can be made uniform for all positions along the axis. This produces spontaneous single-frequency output for homogeneously broadened lasers. It is shown experimentally that maximum stable single-frequency operation of a Nd : YAG laser can be obtained with this technique. Simultaneous doubling of the single frequency is also observed.
ION CONVERSION IN XENON AFTERGLOW PLASMAS
Authors: Bhattacharya A. K.
Published: January 2004

Mass-identified measurements of the time dependence of the density of atomic xenon ions in decaying plasmas are reported. The measurements yield a mobility μ0(Xe+) = 0.66 cm2 V−1 sec−1 for Xe+ in xenon, and for the rate of conversion of Xe+ into Xe2+, a value of 1.8×10−31 cm6 sec−1 at a gas temperature of 300°K.
HIGH-RESOLUTION LASER DOPPLER VELOCITY MEASUREMENT OF BIDIRECTIONAL PULSATILE FLUID FLOW
Authors: Lanz Otto , Johnson Curtis C. , Morikawa Satsuki
Published: January 2004

A laser Doppler heterodyning system has been developed for localized measurement of the magnitude and direction of time-varying fluid flow velocity. Directional sensitivity is achieved by shifting the frequency of the reference laser beam by an acoustical diffraction cell. A Doppler frequency shift proportional to fluid flow velocity is obtained by heterodyning the scattered laser light with a frequency-shifted reference laser beam. Experimental results for time-varying flow velocity in perturbed flow sections are presented.
IMPROVED MAGNETIC BUBBLE MOBILITY BY X-RAY IRRADIATION
Authors: Eisenberger P. , Schmidt P. H. , Walters E. M.
Published: January 2004

An investigation of the effect of x-ray irradiation on magnetic bubble materials shows that an improvement in bubble mobility of up to a factor of 5 over intrinsically grown crystalline samples can be achieved. Conditions for the improvement of the bubble mobility are presented.
OFF-RESONANCE ELECTRONIC RAMAN SCATTERING OF FREQUENCY-DOUBLED Nd LASER RADIATION BY EXCITED MERCURY ATOMS
Authors: Platz P.
Published: January 2004

Excited mercury atoms in an electrodeless discharge are exposed to high-power radiation at 5289 Å obtained by frequency-doubling the output of a Q-switched Nd : glass laser. A very weak line is detected at 4250 Å and described to a Raman transition from the 63 P2 to the 63 P1 state.
REDETERMINATION OF THE NONLINEAR OPTICAL COEFFICIENTS OF Te AND GaAs BY COMPARISON WITH Ag3SbS3
Authors: McFee J. H. , Boyd G. D. , Schmidt P. H.
Published: January 2004

The nonlinear optical coefficients d11(Te) and d14(GaAs) have been determined relative to d+(Ag3SbS3), pyrargyrite, in second harmonic generation (SHG) experiments at 10.6μ. Based on an absolute value for d+(Ag3SbS3) previously determined, we find that d11(Te) = (22±7) × 10−7 esu, and d14(GaAs) = (3.2±1) × 10−7 esu. The value for Te is significantly less than the previously accepted values.
REAL-TIME HOLOGRAPHIC RECONSTRUCTION BY ELECTRO-OPTIC MODULATION
Authors: Goetz George G.
Published: January 2004

Light modulation by an electro-optical material is under examination as an approach to real-time display for sampled holograms. The feasibility of obtaining reconstructed images from coherent light transmitted through a deuterated KH2PO4 crystal (DKDP) having a holographic charge pattern has been demonstrated. A special advantage in the image-to-back-ground intensity ratio, factors influencing resolution, and problems peculiar to the use of DKDP are discussed.
A TRANSVERSE-FLOW CO CHEMICAL LASER
Authors: Jeffers W. Q. , Wiswall C. E.
Published: January 2004

Experimental results are presented on a transverse-flow chemical laser using the reaction of atomic oxygen with carbon disulfide. The design of this device has allowed fast mixing and rapid flow of the reaction products into and out of the volume of the laser optical fields. Primarily because of the transverse flow, the measured output powers are more than one order of magnitude greater than those of similar longitudinal-flow devices. The addition of cold CO to the reaction increases the output power by a factor of typically 2, and may be due to an additional laser-excitation mechanism.
MODE LOCKING OF THE He–Cd LASER AT 4416 AND 3250 Å
Authors: Silfvast W. T. , Smith P. W.
Published: January 2004

Mode locking of the He–Cd laser has been achieved at 4416 and 3250 Å using an intracavity acoustic loss modulator. Pulses narrower than 150 psec with a peak power greater than 1.6 W were obtained at 4416 Å when a special Cd isotope mixture was used. Pulses of the order of 400 psec with a peak power of 0.1 W were obtained at 3250 Å using naturally occurring Cd.
ULTRASONIC AMPLIFICATION IN HIGH ELECTRIC FIELD UNDER TRANSVERSE MAGNETIC FIELD IN InSb
Authors: Hayakawa H. , Kikuchi M.
Published: January 2004

Ultrasonic amplification in InSb under the transverse magnetic field in the high electric field has been performed at 77°K. In lower magnetic field, the increase of the acoustic gain which can be attributed to the Doppler-shifted amplification has been observed in the high electric-field region. The results can give a general explanation of two modes of the acousto-electric current oscillations.
PHOTON DRAG IN GERMANIUM
Authors: Gibson A. F. , Kimmitt M. F. , Walker A. C.
Published: January 2004

The transfer of momentum from a photon stream to free electrons and holes in germanium has been studied. It is shown that a Q-switched CO2 laser at 10.6μ can transfer sufficient momentum to produce a longitudinal emf in a rectangular rod typically 4 cm long. This provides a useful, very high speed detector, operating at room temperature.
DEGENERATE VERNIER INTERFEROMETRIC LASER RESONATORS
Authors: Zory Peter
Published: January 2004

An experiment is described which demonstrates that the loss associated with the high Q modes of vernier resonators remains constant as the degenerate configuration is approached. Methods are described which utilize near-degenerate vernier resonators for (1) studying the competition between laser transitions with common energy levels and (2) measuring electron densities in cw gaseous plasmas.
INFLUENCE OF IMPURITIES ON Si (111) SURFACE STRUCTURES
Authors: Thomas R.N. , Francombe M.H.
Published: January 2004

In situ LEED studies of the homoepitaxial growth of Si (111) films by uhv sublimation indicate that the surface structures which develop are strongly influenced by the metallic impurity content of the silicon substrates, as judged from minority carrier lifetimes. The development of the familiar Si (111)−7×7 LEED pattern at a given annealing or homoepitaxial growth temperature appears to be favored on silicon substrates possessing low lifetimes. Experiments where Fe is introduced prior to annealing and film growth on high-lifetime silicon suggest that this impurity species can lead to the formation of the Si (111)−7×7 surface structure.
INTERPRETATION OF THE SUBPICOSECOND STRUCTURE AND FREQUENCY CHIRP OF MODE-LOCKED LASERS
Authors: Svelto O.
Published: January 2004

A model of mode locking is presented which directly follows from a previously published theory and which explains the recently observed phenomena of subpicosecond structure and frequency chirp of mode-locked lasers.
HOLOGRAPHIC INTERFEROMETRY FOR ROTATING SUBJECT
Authors: Tsuruta T. , Itoh Y.
Published: January 2004

Holographic interferometry has been applied to the measurement of dynamic deformation taking place over an object during rotation. An exact match of the reconstructed images, one recorded in rotation and the other in repose, is achieved by an optical arrangement designed for the purpose and ensures clear interference fringes over the object. A Q-switched ruby laser is used for the recording. A preliminary experiment is described.
PREPARATION OF VISIBLE-LIGHT-EMITTING p-n JUNCTIONS IN AlAs
Authors: Nuese C. J. , Sigai A. G. , Ettenberg M. , Gannon J. J. , Gilbert S. L.
Published: January 2004

p-n junctions have been formed for the first time in AlAs by diffusing Zn into single-crystal n-type vapor-grown AlAs layers. I–V, C–V, and photovoltage measurements indicate well-behaved junctions at room temperature with external electroluminescent efficiencies on the order of 10−5. The room-temperature forward-bias emission spectrum consists of a narrow yellow-green peak at 2.146 eV and two broad infrared peaks at 1.66 and 1.35 eV. At 600°K and 3 V reverse-bias current densities of 10−3 A/cm2 are observed.
MAGNETIC SURFACE MAPPINGS BY STORAGE OF PHASE-STABILIZED LOW-ENERGY ELECTRON BEAMS
Authors: Sinclair R. M. , Hosea J. C. , Sheffield G. V.
Published: January 2004

We describe a new technique for measuring the shape of a toroidal magnetic field (such as in a stellarator). We show that various perturbations do not destroy the magnetic surfaces, but alter their parameters significantly. The same technique can also be used for the long-term storage of low-energy ions.
MEASUREMENT OF VELOCITY-FIELD CHARACTERISTICS OF ELECTRONS IN InSb AT HIGH FIELDS
Authors: Neukermans A. , Kino G. S.
Published: January 2004

The velocity of electrons in p-type InSb at 77°K has been measured as a function of the field in the range from 460 to 625 V/cm, by a time-of-flight technique. It is found that this characteristic displays negative differential mobility. The results are in good agreement with a recent theory by Fawcett and Ruch.
SPATIALLY UNIFORM AND ALTERABLE SHG PHASE-MATCHING TEMPERATURES IN LITHIUM NIOBATE
Authors: Bridenbaugh P. M. , Carruthers J. R. , Dziedzic J. M. , Nash F. R.
Published: January 2004

By the addition of MgO to a congruent melt, one can obtain x-axis crystals of lithium niobate several centimeters in length, whose phase-matching temperature for second harmonic generation (SHG) has been increased appreciably while the spatial uniformity of Tpm has been preserved. Thus it is possible to operate a 0.5145-μ pumped parametric oscillator in a convenient wavelength regime and at a temperature above that for damage annealing.
CHARGE COUPLED 8-BIT SHIFT REGISTER
Authors: Tompsett M. F. , Amelio G. F. , Smith G. E.
Published: January 2004

An 8-bit shift register has been developed based on the charge-coupled device concept. The device configuration is essentially that of a linear array of 26 closely spaced MOS capacitors with a p-n junction at either end. A packet of charge is inserted into the first capacitor from one of the p-n junctions and then transferred down the array in a potential well created by sequential pulsing of the electrode potentials. A high-charge transfer efficiency of greater than 99.9% per electrode has been obtained in this device for transfer times of 2μ sec. The use of the device as an 8-bit shift register and a line imaging device are demonstrated thereby further verifying the charge-coupled device concept and showing the basic feasibility of developing charge-coupled devices for shift registers, logic operations, and optical imaging applications.
COINCIDENCE TWIST BOUNDARIES BETWEEN CRYSTALS OF MgO SMOKE
Authors: Chaudhari P. , Matthews J. W.
Published: January 2004

Twist boundaries have been observed on {001} surfaces between crystals of MgO smoke. Measurements of the angle of twist across 80 of these grain boundaries have revealed a preference for boundaries at 16.5±0.3°, 22.6±0.3°, and 36.6±0.3°. These angles agree with those predicted by the coincidence site model to within the accuracy of measurement.
MEASUREMENTS OF PHOTON CORRELATIONS OF SECOND HARMONIC GENERATED LIGHT
Authors: Davidson F. , Klebba J. , Laurence C. , Tittel F.
Published: January 2004

Results of measurements of the second-order intensity correlation function of the optical field produced by cw optical second harmonic generation in a LiNbO3 crystal pumped by a He–Ne laser operating in two independent axial modes are reported. The observed correlation function is shown to be in agreement with theoretical descriptions of second harmonic generation and with coherence theory.
MEASUREMENT OF ULTRASHORT LASER PULSES BY THREE-PHOTON FLUORESCENCE
Authors: Rentzepis P. M. , Mitschele C. J. , Saxman A. C.
Published: January 2004

We have measured for the first time the duration of picosecond pulses by three-photon fluorescence (3PF). The advantages over the two-photon fluorescence (TPF) technique include higher contrast ratios (10:1 versus 3:1) and capability of measuring the phase-intensity correlation.
HEAT TRANSFER TO LIQUID HELIUM IN NARROW CHANNELS WITH LAMINAR AND TURBULENT FLOW
Authors: Jergel M. , Stevenson R.
Published: January 2004

Boiling heat transfer of liquid helium at 4.2°K has been studied under conditions of forced flow through rectangular channels. The heat transfer characteristic is dependent on whether the flow is laminar or turbulent. Both types of flow give greatly increased heat transfer, turbulent flow being superior. A correlation of the heat transfer data was obtained.
OBSERVATION OF PROPAGATION CUTOFF AND ITS CONTROL IN THIN OPTICAL WAVEGUIDES
Authors: Hall David , Yariv Amnon , Garmire Elsa
Published: January 2004

The first observation of optical cutoff in thin-film waveguides is reported. The waveguides consist of thin (∼10μ) epitaxial layers of high-resistivity GaAs deposited on lower-resistivity GaAs substrates. The optical cutoff is controlled through the electro-optic effect by applying an electric field across the epitaxial layer.
BULK DIFFUSION OF PHOSPHORUS IN SILICON IN HYDROGEN ATMOSPHERE
Authors: Ghoshtagore R. N.
Published: January 2004

Phosphorus-32 has been diffused into (111), float-zone, silicon in hydrogen atmosphere from an epitaxially grown P-32-doped silicon source layer. P-32 concentration profiles obtained show Fickian behavior and provide much lower diffusion coefficients than reported in the literature using oxide dopant sources on a free surface.
SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONS
Authors: Hovel H. J.
Published: January 2004

Heterojunctions of nZnSe–pGe switched from a high impedance to low in 100 nsec when a threshold voltage is exceeded. Resetting occurs in the opposite bias direction in 10 nsec after sufficient current is applied. Either state is maintained with all bias removed for a minimum of two weeks.
TIME OF FLIGHT OF IONS IN AN INHOMOGENEOUS OSCILLATORY ELECTRIC FIELD
Authors: Carrico J. P. , Ferguson L. D. , Mueller R. K.
Published: January 2004

The measurement of the time of flight of ions in an inhomogeneous oscillatory electric field is used to spearate ions of different mass-to-charge ratios. Analytical and experimental results are reported.
USE OF ASYMMETRIC DIFFRACTION IN X-RAY TOPOGRAPHY TO REVEAL INTERFACIAL STRAIN
Authors: Saccocio Edward J.
Published: January 2004

Perimeters only of thin films have heretofore been observed on crystal substrates by x-ray topography. It has been found that the entire film/crystal interface can be exhibited in like fashion if asymmetric diffraction is used to produce the topograph.
HETERODYNE DETECTION OF 10.6-μ RADIATION BY METAL-TO-METAL POINT CONTACT DIODES
Authors: Abrams R. L. , Gandrud W. B.
Published: January 2004

Optical heterodyne detection of 10.6-μ radiation has been performed with metal-to-metal point contact diodes, using a 30-MHz IF. The minimum detectable power of 9.1×10−14 W/Hz is the lowest value ever reported at 10μ for a room-temperature detector operating at megahertz frequencies.
SPATIALLY RESOLVED GAIN MEASUREMENTS IN A FLOWING CO2 AMPLIFIER
Authors: McQuillan A. K. , Carswell A. I.
Published: January 2004

Spatially resolved gain measurements at 10.6μ have been made transverse to the discharge in an axially flowing CO2 laser amplifier. These show a nonuniform gain throughout the discharge with maximum gain at the upstream end of the positive column. Increasing the flow velocity shifts the gain profile and leads to an over-all increase in gain. Spatial intensity profiles of the sidelight emission of CO2 at 4.3μ, CO at 0.48 and 2.3 μ, and N2 at 3371 Å are shown.
MEASUREMENT OF THE LOWER-LEVEL POPULATION OF THE ARGON ION LASER USING LASER-INDUCED POPULATION CHANGES
Authors: Johnston T. F.
Published: January 2004

A method is described for determining the inversion ratio on a laser transition from measurements of laser-induced changes in the upper level population. This method is used to determine the lower-level population of the 4880-Å transition in the argon ion laser as a function of tube current, axial magnetic field, and fill pressure.
THE NERNST DETECTOR: FAST THERMAL RADIATION DETECTION
Authors: Washwell E. R. , Hawkins S. R. , Cuff K. F.
Published: January 2004

A thermal radiation detector based on the Nernst effect is capable of relatively high-speed operation without loss of responsivity or detectivity (D*) over its low-frequency values. The effective decoupling of the responsivity and thermal time constant is the result of the specific characteristics of the Nernst effect. Results are presented for materials having optimum properties for operation at room temperature (Bi), as well as lower temperatures (Bi97Sb3).
FABRY-PEROT STRUCTURE AlxGa1−xAs INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/cm2
Authors: Kressel H. , Hawrylo F. Z.
Published: January 2004

Heterojunction injection lasers of (AlGa) As have been made with room-temperature threshold current densities ∼3 times lower than previously reported devices emitting in the same spectral range. Fabry-Perot structure lasers with Jth as low as 2530 A/cm2 emitting at ∼8800 Å are described. The improved performance is partly due to a very high optical gain coefficient resulting from a high doping level in an exceptionally narrow lasing region (0.8μ).
FOURIER TRANSFORM HOLOGRAMS OF THREE-DIMENSIONAL OBJECTS
Authors: Som S. C. , Lessard R. A.
Published: January 2004

A method has been discussed which enables the formation of the Fourier transform hologram of a three-dimensional object scene such that the reconstructed image is also three-dimensional in nature showing, say, parallax effect. Supporting experimental result has been presented.
STORAGE OF HOLOGRAMS IN A FERROELECTRIC-PHOTOCONDUCTOR DEVICE
Authors: Keneman S. A. , Taylor G. W. , Miller A. , Fonger W. H.
Published: January 2004

Optical holographic storage and pattern storage have been demonstrated in an integrated ferroelectric-photoconductor device (Bi4Ti3O12–ZnSe). The device has nondestructive readout and is erasable. Gratings as fine as 1.26μ were stored. Recording sensitivity was approximately 10μJ/mm2. Diffraction readout efficiencies of approximately 0.01% were measured.
PHOTOLUMINESCENCE IN Bi12SiO20 AND Bi12GeO20
Authors: Lauer R. B.
Published: January 2004

A red photoluminescence emission band peaking at 1.95 eV is reported for Bi12SiO20 and Bi12GeO20. The mechanism for exciting the luminescence transition is considered, and a tentative model for the luminescence center is proposed. It is suggested that the most likely mode of excitation involves resonance transfer of energy from excitons to the luminescence center by means of a radiationless process followed by subsequent light emission from the luminescence center.
THERMALLY INDUCED OSCILLATIONS AND NEGATIVE RESISTANCE IN GaAs DOUBLE-INJECTION DEVICES
Authors: Ferro A. P. , Ghandhi S. K.
Published: January 2004

Thermally induced oscillations are observed in semiinsulating O2-doped GaAs double-injection devices, by heating them beyond a critical temperature. In addition, a stable voltage-controlled negative-resistance characteristic has been obtained by suitable device termination. Possible mechanisms for these oscillations are proposed.
EVIDENCE FOR EXCIPLEX LASER ACTION IN COUMARIN DYES BY MEASUREMENTS OF STIMULATED FLUORESCENCE
Authors: Dienes A. , Shank C. V. , Trozzolo A. M.
Published: January 2004

Experiments have been performed that measure the time dependence of stimulated fluorescence from acidified solutions of 4-methylumbelliferone and 7-hydroxycoumarin. The results show that laser action takes place from excited state complexes. It was found that exciplex emission is delayed after the neutral molecule emission. The delay gives a measure of the exciplex formation time. The measured dependence of exciplex formation time on hydrogen ion concentration, temperature, and pumping power was found to agree qualitatively with a simple model. Evidence for multiple exciplex formation is also presented.
MEASURED PULSE VELOCITY GREATER THAN c IN A NEON ABSORPTION CELL
Authors: Faxvog F. R. , Chow C. N. Y. , Bieber T. , Carruthers J. A.
Published: January 2004

The pulse velocity in a Ne absorption cell placed inside a self-locked He–Ne (6328 Å) laser has been found to exceed c, the free-space velocity of light, by about 3 parts in 104. Conversely, the pulse velocity in a He–Ne gain cell was less than c by about the same fraction. These results are consistent with the classical group velocity dω/dk, where the frequencies are confined to the central region of the resonant line.
NEGATIVE RESISTANCE, CONDUCTIVE SWITCHING, AND MEMORY EFFECT IN SILICON-DOPED YTTRIUM-IRON GARNET CRYSTALS
Authors: Bullock D. C. , Epstein D. J.
Published: January 2004

A current-controlled negative resistance has been found in thin single-crystal wafers of silicon-doped yttrium-iron garnet (Si-YIG). Switching properties have been examined, and relaxation oscillations in the range 0.5–1 MHz have been established in the negative resistance region. A conductive memory state having a behavior similar to that occurring in amorphous semiconductors has also been seen.
OPTICAL PROBING OF LOCALIZED ELECTRON-HOLE PLASMAS IN n-TYPE InSb
Authors: Benoit J.
Published: January 2004

A CO2 laser is used as a hole density probe in order to study low-field contact effects in n-type InSb near liquid-nitrogen temperature—injection at the anode and avalanche, in presence of a transverse magnetic field, and at the cathode. These two effects are shown to be present during acoustoelectric oscillations.
PHOTOANODIC ENGRAVING OF HOLOGRAMS ON SILICON
Authors: Dalisa A. L. , Zwicker W. K. , DeBitetto D. J. , Harnack P.
Published: January 2004

Holograms have been recorded on the surface of Si by means of a photoanodic reaction. Resolution better than 2500 lines/mm have been achieved in holographically recorded gratings. Diffuse object holograms with reconstruction efficiencies as high as 10% have also been obtained.
THIN-OXIDE MOS CAPACITANCE STUDIES OF FAST SURFACE STATES
Authors: Hunter William R. , Eaton D. H. , Sah C. T.
Published: January 2004

Fast surface states at the silicon-silicon dioxide interface have been studied using the MOS capacitor structure with a very thin oxide (50–100 Å), which greatly enhances the effect of the surface states on the capacitance-voltage characteristics. On p-type silicon, a surface-state distribution with a peak at 0.3 eV above the valence band is observed. Comparison of the experimental results with theoretical calculations based on the equivalent circuit model is made. Total density of state of 5.4×1012/cm2 with a peak of 3×1013 surface states/cm2 eV are observed.
A FIELD-INDEPENDENT OPTICALLY PUMPED 85Rb MASER OSCILLATOR
Authors: Stern W. A. , Novick R.
Published: January 2004

Oscillation is reported in an optically pumped 85Rb maser operating on the magnetic-field-independent ground-state hyperfine transition (3035.73…MHz). A power output of 8×10−10 W was observed. Frequency shifts due to buffer gas were measured. Light and cavity shifts were also observed.
EFFECTS OF SURFACE STATES ON SURFACE WAVE AMPLIFICATION
Authors: Zemon S. , Conwell E. M.
Published: January 2004

The present theory of amplification of Rayleigh waves by drifting carriers in a semiconductor neglects the possibility of surface states. Experimental investigations of the propagation of Rayleigh waves on CdS have revealed in many samples behavior that differs markedly from theoretical expectations, notably (1) relatively small amounts of high-frequency amplified noise; (2) relatively small parametric downconversion; (3) increase with strain, starting at the smallest strains conveniently measured, of the drift field Eco at which attenuation changes to gain; (4) decreases in conductance that persist milliseconds after the passage of high-strain surface waves. The presence of a depletion layer at the surface provides explanations for all these features.
CaMoO4 ELECTRONICALLY TUNABLE OPTICAL FILTER
Authors: Harris S. E. , Nieh S. T. K. , Feigelson R. S.
Published: January 2004

The paper describes a CaMoO4 transmission-type acousto-optic filter. Tuning from about 6700 to 5100 Å is obtained by changing an acoustic frequency from 40 to 68 MHz. The filter bandwidth is 8 Å at an f/6 aperture. 95% transmission is obtained at an acoustic power density of 69 mW/mm2.
SHORT-TIME MODE BEHAVIOR OF GaAs LASERS
Authors: Weber H. P. , Gloge D.
Published: January 2004

GaAs lasers are known to emit spectra containing many axial modes, but it has not been established whether these oscillate simultaneously or sequentially in time. Analysis of some earlier experimental results obtained by intensity interferometry indicate that the intensity fluctuates on a picosecond time scale and hence that the axial modes must be oscillating concurrently. However, they are not mode locked.
OPTICAL PARAMETRIC OSCILLATION IN PROUSTITE
Authors: Ammann E. O. , Yarborough J. M.
Published: January 2004

The nonlinear material proustite (Ag3 AsS3) has been employed in an optical parametric oscillator. The oscillator is pumped by the 1.06-μ output from a repetitively Q-switched Nd : YAG laser and has signal and idler outputs near 2.1μ. Operation of the oscillator is described and the results of optical parametric fluorescence experiments are given. The primary limitation on the operation of the oscillator is surface damage to the proustite crystal.
SOFT X-RAY TUBE FOR ELECTROSTATIC CYLINDRICAL ELECTRON SPECTROGRAPHS
Authors: Ratinen H.
Published: January 2004

The soft x-ray tube with the aluminum anode, for photoelectron spectroscopy with a cylindrical electron spectrograph, has been constructed and tested. The construction permits 20 mm distance between the tube anode and the sample. The testing anode voltage was 5 kV and anode currents 2.5, 5, and 7.5 mA. The stability of the tube was satisfactory. During the test of 5.5h for each current the contamination of the anode surface, caused by the oil from the diffusion pump, decreased the intensity of the tube 10–20%.
ELECTRON LOCAL-MODE PHONON INTERACTION IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL JUNCTIONS
Authors: Schein L. B. , Compton W. Dale
Published: January 2004

Interactions between tunneling electrons and a variety of phonons have been previously reported in MIS tunnel junctions including zone boundary phonons, the k = 0 longitudinal optical phonon, and the B local-mode phonon. We report here the observation of interactions between the tunneling electron and the local-mode phonon associated with N in n-type SiC and P, O, and perhaps C and C–O in n-type Si. The data in SiC suggest that the interaction with the tunneling electrons arise from N substituted for Si atoms. The identification of the local modes in Si is based on agreement with infrared absorption measurements, by observation of at least two local-mode peaks for each impurity, and a correlation between the strength of the interaction and the concentration of P and O impurities present in various crystals.
TUNABLE DYE LASER WITH NARROW SPECTRAL OUTPUT
Authors: Walther H. , Hall J. L.
Published: January 2004

A tunable dye laser with narrow-banded spectral output in the order of 0.01 Å or smaller is described. This narrow spectral output is obtained by means of a birefringent filter (Lyot filter) which was inserted into the laser cavity. The properties of this laser setup have been investigated and are described.
cw OPERATION OF AN ORGANIC DYE SOLUTION LASER
Authors: Peterson O. G. , Tuccio S. A. , Snavely B. B.
Published: January 2004

A cw laser using a 2.5×10−4 M solution of rhodamine 6G in water containing a deaggregating agent (1.5% Triton-X100) is described. The laser consists of a 4.5-mm transverse-flow hemispherical cavity excited longitudinally by the 5145-Å output of a 1-W argon ion laser. With mirror reflectances of 97.5% and 99.5%, a 200-mW threshold excitation was measured. Power output was approximately 30 mW at 597 nm with 960 mW excitation power.
cw SUBMILLIMETER LASER ACTION IN OPTICALLY PUMPED METHYL FLUORIDE, METHYL ALCOHOL, AND VINYL CHLORIDE GASES
Authors: Chang T. Y. , Bridges T. J. , Burkhardt E. G.
Published: January 2004

cw laser action is obtained on two lines in methyl fluoride, three lines in vinyl chloride, and 23 lines in methyl alcohol by optically pumping the gases with various lines of the CO2 laser. The laser wavelengths range from 70 to 700 μm.
MOLYBDENUM FILMS AS PARTIAL DIFFUSION MASKS IN MOS PROCESSING
Authors: El-Hoshy Ahmed , Brown Dale M. , Engeler William E.
Published: January 2004

Thin molybdenum films ∼1000 Å deposited on thermal SO2 grown on Si are observed to act as partial masks for B diffusion. B-doped glass is used as a diffusion source. Detection of the diffusion front is through measuring C-V curves for the MOS structure with molybdenum as the metal electrode. The above process is used to fabricate low threshold enhancement mode and depletion mode p-channel MOSFET's in one diffusion step.
DEFLECTION OF AN OPTICAL GUIDED WAVE BY A SURFACE ACOUSTIC WAVE
Authors: Kuhn L. , Dakss M. L. , Heidrich P. F. , Scott B. A.
Published: January 2004

The experimental demonstration of deflection of an optical film-guided wave by a surface acoustic wave is reported. When Bragg conditions are satisfied, 0.18 W acoustic power gives rise to 66% deflection efficiency as measured by the depletion of the incident optical guided wave.
THICKNESS OF Cs AND Cs–O FILMS ON GaAs(Cs) AND GaAs(Cs–O) PHOTOCATHODES
Authors: Sommer A. H. , Whitaker H. H. , Williams B. F.
Published: January 2004

The Cs content of GaAs(Cs) and GaAs(Cs–O) photocathodes was determined by direct chemical analysis. The surface films were found to be of monolayer dimension. From this result, it is concluded that the effect of these films on electron emission is probably not associated with the bulk properties of cesium oxide.
EFFECT OF ION-IMPLANTATION DAMAGE ON THE OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE
Authors: Shifrin G. A. , Hunsperger R. G.
Published: January 2004

Optical (3–6 eV) reflectivity spectra of Cd+-implanted layers of GaAs are examined as functions of dose in the range of 1012 to 8×1014 ions/cm2 and of annealing up to 600°C. Characteristic peaks in the crystalline spectrum decrease smoothly with dose, with some saturation observed at about 6×1013/cm2. Annealing tends to partially restore the spectra toward the crystalline form. Similarity with results for implanted silicon layers is noted. Reflectivity and observations of lattice damage by Rutherford scattering are correlated.
A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORS
Authors: Zohta Yasuhito
Published: January 2004

It is pointed out that the conventional capacitance method and the Copeland method provide different results for the determination of impurity concentrations of semiconductor wafers in the presence of deep centers. On the basis of a discussion of this phenomenon, a simple method of determining the concentration and the energy level of deep centers is proposed and demonstrated. The method is checked by application to oxygen-doped n-type GaAs with a carrier concentration of 3.2×1015 cm−3. The result yields a value of 2.1×1016 cm−3 for the deep center concentration and a value of 0.57 eV below conduction band for the energy level of the deep centers, which are reasonable in comparison with other experimental data.
MEASUREMENT OF ULTRASONIC SURFACE WAVE VELOCITY AND ABSORPTIVITY ON SINGLE-CRYSTAL COPPER
Authors: Diachok Orest I. , Hallermeier Robert J. , Mayer Walter G.
Published: January 2004

Light-ultrasound interaction techniques were employed to measure the velocity and absorptivity of surface waves in various directions on the (100) face of single-crystal copper sample. Schlieren images of beam displacement at the liquid-sample interface were used to determine crystal orientation.
SPONTANEOUS AND LASER EMISSION FROM Pb1−xSnxTe DIODES PREPARED BY Sb DIFFUSION
Authors: Antcliffe G. A. , Wrobel J. S.
Published: January 2004

Impurity diffusion, using the donor impurity Sb, has been used to prepare high-quality Pb1−xSnxTe (x=0.13–0.20) light-emitting diodes. The emission of 8–14 μ spontaneous and laserlike radiation from these diodes is discussed in terms of the optical gain expected at these wavelengths.
NONLINEAR OPTICAL SUSCEPTIBILITY OF LITHIUM FORMATE MONOHYDRATE
Authors: Singh S. , Bonner W. A. , Potopowicz J. R. , Van Uitert L. G.
Published: January 2004

Nonlinear optical coefficient, optical transmission, and refractive indices of orthorhombic lithium formate monohydrate single crystals have been measured. The crystals are transparent from 0.25 to about 1.2μm and suffer no optical damage. The SHG can be phase-matched for a large number of fundamental wavelengths in the range of transparency of the material. The phase-matchable nonlinear coefficient d24=d32=3.5× d11α-SiO2. For the 1.064 to 0.532μm conversion, both d24 and d32 are phase-matchable and the conversion efficiency is found to be twice that of LiIO3.
A UNIVERSAL MICROSECTIONING TECHNIQUE FOR DIFFUSION
Authors: Gupta D. , Tsui R. T. C.
Published: January 2004

rf sputter etching has been successful tested for microsectioning and profiling of Au195 radioactive tracer self-diffusion into Au. It was possible to obtain sections of only 50 Å thickness in a reproducible manner and measure extremely small diffusion coefficients. The technique is expected to lend itself universally for diffusion microsectioning.
BARIUM MANGANESE FLUORIDE, A NEW CRYSTAL FOR MICROWAVE ULTRASONICS
Authors: Spencer E. G. , Guggenheim H. J. , Kominiak G. J.
Published: January 2004

Frequency and temperature dependence of the microwave elastic properties and the velocities of propagation are reported for BaMnF4. A sharp anomaly in attenuation indicates that a crystallographic phase transition occurs at T=255°K.
HIGH-PRESSURE PULSED XENON LASER
Authors: Schwarz S. E. , DeTemple T. A. , Targ Russell
Published: January 2004

Pulsed laser action in neutral xenon has been obtained using a transversely excited helium-xenon discharge with xenon partial pressure in the range 5–50 Torr. The optimum xenon partial pressure is 100 to 1000 times greater than that in previously reported cw xenon lasers. Pulses of 1000-W peak power and 0.5-μsec duration are obtained, with spectral components at 2.027, 3.508, and 3.652μ.
SINGLE PASS GAIN OF EXCIPLEX 4-MU AND RHODAMINE 6G DYE LASER AMPLIFIERS
Authors: Shank C. V. , Dienes A. , Silfvast W. T.
Published: January 2004

Single pass gain has been measured in N2 laser pumped exciplex 4-Methylumbelliferone (4-MU) and rhodamine 6G dye lasers using a technique developed by Silfvast and Deech for high-gain pulsed metal vapor lasers. The gain is measured by comparing the intensities of amplified spontaneous emission in single and double cell lengths with the maximum unsaturated single-pass gain being limited by the saturation of the spontaneous emission. Maximum unsaturated gains on the order of 20 dB/cm were measured for both dyes. The gain was found to vary linearly with pump power. The technique was also used to measure the variation of gain with wavelength for a given pump power. The maximum gain for exciplex 4-MU occurred at the fluorescence peak, whereas for rhodamine 6G it was shifted to a longer wavelength due to ground-state reabsorption. By fitting the measured gain versus wavelength to the theory, it was possible to deduce the fractional excited singlet population in the rhodamine 6G solution.
ION IMPLANTATION OF SODIUM, LITHIUM, AND NEON IN CADMIUM SULFIDE
Authors: Tell B. , Gibson W. M. , Rogers J. W.
Published: January 2004

Na, Li, and Ne have been implanted into CdS in order both to study the luminescence and to attempt to achieve type conversion. Acceptor luminescence, due to the alkali impurities, has been produced with significant intensity, but type conversion has not been observed. The luminescence efficiency and the induced emission intensity as a function of annealing temperature have been obtained.
ANISOTROPIC NUCLEAR SPIN-LATTICE RELAXATION IN A NEMATIC-LIQUID CRYSTAL
Authors: Tarr C. E. , Nickerson M. A. , Smith C. W.
Published: January 2004

The proton spin-lattice relaxation time T1 of p-methoxybenzilidene-p′-cyanoanaline has been studied as a function of molecular alignment in a dc electric field. The experimental results clearly show a large anisotropy in T1 for the benzene-ring protons as well as an isotropic spin-lattice relaxation time associated with the remaining protons. These results are in agreement with the most recent theoretical descriptions.
ION-IMPLANTATION INDUCED OPTICAL ABSORPTION EDGE SHIFTS IN GaP
Authors: Davey J. E. , Pankey T. , Malmberg P. R. , Lucke W. H.
Published: January 2004

The effects of implantation of argon on the optical properties of GaP films and bulk have been investigated for doses of 1013 to 1015/cm2 and energies between 1.5 and 3 MeV. Implantation of ordered films and bulk GaP results in a marked change in the optical absorption edge from about 2.3 eV to less than 1.0 eV, similar to behavior observed for amorphous films and for those subject to neutron irradiation. A maximum value of 3.22 has been observed for the index of refraction of implanted films as compared with 3.06 for bulk or highly ordered films. Bulk optical behavior can be recovered for implanted GaP with annealing at temperatures below 600°C.
WORK FUNCTION OF A GOLD FILM MEASURED DURING THE NUCLEATION OF A SILVER OVERLAYER
Authors: Mitchinson James C. , Pringle Robert D.
Published: January 2004

A rotating dynamic capacitor is used to measure the contact potential difference between a gold reference electrode and λ gold film during the nucleation of a silver overlayer. An interpretation of the resulting graphs is given and the curves are fitted to an exponential relationship between the mean overlayer thickness and the percentage area covered. These results are compared with results for a gold overlayer on silver film.
MICROSTRUCTURE ARRAYS PRODUCED BY ION MILLING
Authors: Spencer E. G. , Schmidt P. H. , Fischer R. F.
Published: January 2004

Techniques have been developed using argon ion milling to produce high-density microstructure arrays of permalloy magnetic dipoles for use in magnetic bubble devices. Ion milling is used to replace the chemical etch process in the usual photolithographic method, which results in an order-of-magnitude improvement in density. A 1000-bit I and bar shift register has been made in which the spacing between elements in 7.5μ, and the width of the elements are ∼ 1μ. The entire structure is 0.25 mm (or 10 mil) square.
MULTIPLE KINK EFFECT IN GRAPHITE
Authors: Yugo Shigemi , Hayashi Haruhisa , Yazawa Kazuhiko
Published: January 2004

It is found that (1) the current-voltage relation of graphite has three kink points under the influence of a transverse of a transverse magnetic field, and (2) the kink effect is observed even at such a high temperature as 300°K. These kinks are attributed to the interaction between conduction electrons and various modes of phonons that are unique in the lamellar structure material.
OPTICAL MODULATION OF ELECTRONS
Authors: Hutson A. R.
Published: January 2004

When a high-energy electron traverses a thin dielectric film guiding a laser beam, it is partially scattered by the electromagnetic field. The scattered wave function and the probability amplitude then carry optical information as time and spatial modulation. This effect, rather than classical bunching of electrons, is proposed as the modulation mechanism in the Schwarz-Hora experiment.
INTENSITY RELATIONSHIPS IN THE SCHWARZ-HORA EFFECT
Authors: Van Zandt L. L.
Published: January 2004

The dependence of the intensity of the reemitted radiation in the Schwarz-Hora effect as a function of electron beam intensity, coherence time, energy spread, and beam length is calculated. Sufficient information is given to provide for experimental confirmation or rejection of the hypothesis that radiation occurs by virtual excitation of and longitudinal dipole radiation from target ions. Two terms, one quadratic and one linear in the beam current, are found.
INCREASE OF CURIE TEMPERATURE IN EuO FILMS BY Fe DOPING
Authors: Ahn K. Y.
Published: January 2004

A large increase of ferromagnetic Curie temperature from 69.5 to ∼180°K has been discovered in EuO films by Fe doping. In films containing Fe up to 8% by weight, the structure is essentially the same as bulk EuO, the magnetic moment (at 4.2°K) is reduced slightly to 190 emu/g, the longitudinal Faraday rotation shows a similar wavelength dependence as that of pure EuO with a maximum positive rotation of 2.4×105 deg/cm at 6500 Å at an incidence angle of 65°, square hysteresis loops extend to ∼160°K, and the optical absorption characteristics are modified by Fedoping with a peak absorption coefficient of 2.4×105/cm (at 300°K) at 5800 Å.
HIGH-RESOLUTION INVERTED LAMB-DIP SPECTROSCOPY ON SF6
Authors: Goldberg M. W. , Yusek R.
Published: January 2004

The technique of inverted Lamb-dip spectroscopy was used to observe 43 SF6 absorption lines coincident with the P(18) line and 24 lines coincident the P(16) line in the 10.6-μ band of the CO2 laser. Using heterodyne methods, line spacings on the order of 1 MHz were measured, and the resulting line spectra were referenced to laser line center.
P-N JUNCTION FORMATION IN ION-IMPLANTED ZnTe
Authors: Marine J. , Rodot H.
Published: January 2004

Chlorine ion implantation in ZnTe gives a highly resistive n-type layer. We describe the technological process used for the doping, as well as the different tests which allowed us to conclude that the type conversion of ZnTe was accomplished.
cw LASER ACTION AT 81.5 AND 263.4 μm IN OPTICALLY PUMPED AMMONIA GAS
Authors: Chang T. Y. , Bridges T. J. , Burkhardt E. G.
Published: January 2004

cw laser action at 81.5 and 263.4 μm, corresponding to a rotational transition and an inversion transition in the v2 state of NH3, has been obtained by optically pumping the gas with an N2O laser.
SOME OPTICAL PROPERTIES OF ALUMINUM ARSENIDE
Authors: Minden H. T.
Published: January 2004

Epitaxial AlAs was grown on GaAs substrates, and polycrystalline AlAs films were deposited on quartz. The visible optical absorption edge indicated that the direct band gap was 3.5 eV while the indirect gap was 2.2 eV. Infrared interference fringes were measured and the high-frequency dielectric constant was determined to be 15.2. The transverse restrahl frequency was 400 cm−1.
ENHANCEMENT OF THE FAR-INFRARED PHOTOCONDUCTIVE RESPONSE IN p-TYPE Ge
Authors: Wagner R. J. , Prinz G. A.
Published: January 2004

An increase in far-infrared photoconductivity caused by near-infrared light has been observed. A number of possible explanations are given for the experimental observations. The potential use of this technique for experiments beyond 100μ is suggested.
FIELD-ASSISTED REEMISSION OF CHARGE CARRIERS FROM SHALLOW IMPURITY CENTERS IN GERMANIUM
Authors: Martini M. , McMath T. A.
Published: January 2004

Field-assisted reemission has been observed at low temperatures for charge carriers captured by shallow ionized donor and acceptor states in germanium. The observed behavior is well explained by the three-dimensional Poole-Frenkel theory at moderate field strength (400–1000 V cm−1); at higher fields, other effects dominate the reemission process.
DONOR BEHAVIOR IN INDIUM-ALLOYED SILICON
Authors: McCaldin J. O. , Mayer J. W.
Published: January 2004

The anomalous doping behavior of Si regrown from In solution was studied by (1) Schottky barrier evaluation of conductivity type, (2) electron microprobe analysis for phosphorus, and (3) channeling effect measurements for interstitial In. The latter showed In present at ∼ 1019 cm−3, but not occupying a regular substitutional or interstitial position. A correlation was found in the first two measurements between phosphorus contamination and n-type conductivity. When the In was contacted only by quartz freshly etched in HF, the n-type behavior and phosphorus contamination disappeared. The anomalous doping behavior is most likely due to phosphorus inpurity picked up by the In.
LOW ACOUSTIC LOSS CHALCOGENIDE GLASSES— A NEW CATEGORY OF MATERIALS FOR ACOUSTIC AND ACOUSTO-OPTIC APPLICATIONS
Authors: Krause J. T. , Kurkjian C. R. , Pinnow D. A. , Sigety E. A.
Published: January 2004

Some ternary groups 1VA-VA-V1A nonoxide glasses have been found which have very low acoustic losses of the order of fused silica, low values of sound velocity, and very high acousto-optic figures of merit. Their optical transmission range is 1 – 12μ. The unusual combination of these parameters in a chemically stable isotropic medium make these glasses attractive for us in acoustic and acousto-optic devices operating at infrared wavelengths.
OPTICAL PROBING OF BULK WAVES PRESENT IN ACOUSTIC SURFACE WAVE DELAY LINES
Authors: Schmidt R. V.
Published: January 2004

Diffraction of laser light from bulk waves present in a LiNbO3 surface wave delay line has been used to probe surface wave mode conversion. Up to 4% of the power present in a surface wave incident on a reactively loaded interdigital transducer has been observed to be scattered into shear waves. In addition, a driven interdigital transducer has been seen to radiate bulk waves with directivity properties well described by a phased array antenna model.
EFFICIENT ELECTROLUMINESCENCE FROM InP DIODES GROWN BY LIQUID-PHASE EPITAXY
Authors: Blom G. M. , Woodall J. M.
Published: January 2004

Light-emitting InP diodes were made by liquid-phase epitaxy. The most efficient diodes result when the n-type layers are grown from a Sn-doped melt, while the p-type layers are grown from the same melt, but overcompensated with Zn. External quantum efficiencies up to 0.75% at room temperature and 11.7% at 77°K were observed in uncoated diodes. Threshold current densities for stimulated emission were as low as 750 A/cm2 at 77°K. Spontaneous emission can be observed normal to the p-n junction.
LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SI
Authors: Whan R. E. , Arnold G. W.
Published: January 2004

Measurements of the surface topography of ion-bombarded GaAs and Si show a marked elevation of the irradiated portion of the surface relative to the surrounding unirradiated material. The average lattice atom displacement brought about by the expansion can cause anomalously high yields of displaced atoms as measured by backscattering of particles incident along channeling directions.
HOLOGRAPHIC RECORD OF POLARIZATION IN VOLUME HOLOGRAM
Authors: Som S. C. , Lessard R. A.
Published: January 2004

It is pointed out that volume holograms can be successfully used to store and retrieve informations about the state of polarization of a wave field. Supporting experimental results, which were obtained with a polarized wave field caused by stress birefringence, are presented.
VACUUM ULTRAVIOLET LASER EMISSION FROM MOLECULAR HYDROGEN
Authors: Waynant R. W. , Shipman J. D. , Elton R. C. , Ali A. W.
Published: January 2004

Using a short-risetime traveling-wave discharge system, lasing has been produced in molecular hydrogen in the 1600-Å region and confirmed by direct observation of extensive amplification in the direction of travel. Pulsewidths and powers on the order of 1 nsec and hundreds of kilowatts, respectively, are observed. The ten H2 lines resolved extend from 1567 to 1613 Å in the Lyman band. The laser lines originate from transitions between the vibrational levels of the state B(2pσ1Σu+) and the higher vibrational levels of the ground state X(1s1Σg+).
A CURRENT VOLTAGE TECHNIQUE FOR OBTAINING LOW-FREQUENCY C-V CHARACTERISTICS OF MOS CAPACITORS
Authors: Kappallo W. K. , Walsh J. P.
Published: January 2004

A simple technique for the measurement of low-frequency capacitance-voltage characteristics of MOS capacitors utilizing the current response of these devices to slow linear voltage ramps is described. The capability of this technique is demonstrated in representative C-V curves showing the effects of temperature, frequency, and light on the MOS characteristics.