bluuebunny/crossref_metadata_2025 huggingface dataset:
Characteristics of Microwave Plasma Observed by Spectroscopic and Mass Spectrometric Methods
Authors: Omura Itiro , Doi Hiroshi
Published: November 2005

The plasma light source operated in the standing wave mode are analyzed experimentally by using two methods. One is the spectroscopic method, and the other is the mass spectrometric method. Using the former method we can identify the several lines in the vacuum ultraviolet regions. There are the resonance lines and the emission lines for the carrier gas. For example, the emission lines of Ar V at 524 Å, Ar VII at 462 Å and He II at 304 Å are generated from the argon and the helium plasma operated in the standing wave mode. On the other hand, the resonance lines of Ar I at 1048 Å and He I at 584 Å are generated from the plasma without the standing wave mode. Using the latter method, we can observe the mass spectrum of organic compounds irradiated with the resonance line and the emission line. In order to use as a light source of the mass spectrometer, the optimum operated conditions are determined as a function of the carrier gas pressure.
Photo Hall Mobility in CdS Single Crystal at High Electric Field
Authors: Yamamoto Keiichi , Yano Seiki , Abe Kenji
Published: November 2005

Experiments of photo Hall effect on CdS single crystals with high dark resistivity have confirmed the mobility, µH, has a peak near the critical electric field,Ec, for current saturation, beyond which µHdecreases in proportion toE-1by phonon scattering, and shows anisotropy so as to be µH(E⊥c-axis)>µH(E//c-axis), while belowEcsome indications exist of ionized impurity scattering and of impact ionization. Under strong illumination of samples withE//c-axis,Ecoccurs at the electron drift velocity,vd, smaller than the sound velocity,vs, while under weak illuminationvdatEcbecomes equal tovs.
Zone Refining of Anthracene
Authors: Matsui Atsuo , Ishii Yasuhiro
Published: November 2005

A condition which minimize the time required to get the maximum fractional yield of purified material is investigated. General procedure derived is applied to find the condition of refining anthracene containing tetracene as an impurity. The optimum rate of zone travelling falls about 13 cm/h, and is little dependent on the desired degree of impurity separation. On the other hand, the optimum zone length in practical case is governed by the ingot length and the minimum interval between the adjacent zones. The maximum fractional yield under the optimum travel rate always amounts to about 65%. The content of tetracene in anthracene is estimated by a luminescence method down to the mass concentration of 10-6. The functional relation between the travel rate and the distribution coefficient satisfies a general formula proposed by Burton; best fit is obtained with δ/D=360 s/cm. The magnitude of the equilibrium distribution coefficient of tetracene in anthracene is found to be 0.04.
The Structure of Magnetic Thin Films Evaporated with Oblique Incidence
Authors: Yamanaka Mikio , Ueda Ryuzo
Published: November 2005

In order to clarify the structure of films with oblique incidence, the magnetic anisotropy was measured for Fe-Ni alloy films evaporated obliquely both on glass substrates and the surfaces of silicon grease. An X-ray small angle scattering pattern was obtained for the aluminium-Permalloy composite film deposited obliquely from the opposite side. As the simulation of X-ray scattering, the Fraunhofer diffraction pattern of laser beam was taken for a model of the chain structure in these films. The demagnetizing field factor of the chain structure and the value of anisotropic stress were estimated for these Fe-Ni films as 0.13 and 6.8×108 dyn/cm2 respectively. The average width of a chain was about 56 Å which is obtained from the analysis of X-ray scattering pattern. The laser beam diffraction gave an evidence for the images of the structure of obliquely deposited films.
A New Technique of X-Ray Diffraction Microscopy of Scanning Type
Authors: Kishino Seigô , Sugita Yoshimitsu , Kohra Kazutake
Published: November 2005

A new technique of the scanning method is proposed for obtaining an undistorted image in the X-ray diffraction microscopy, where, in contrast to the usual Lang method, the specimen is movable in a appropriate direction while the photographic plate is at rest. This technique gives same image in size as the specimen for any diffracting plane employed. With use of X-rays of appropriate wavelengths, diffraction topographs of the same (hkl) plane in both the Bragg and Laue cases can be obtained. Experimental results and application of this technique are described.
Transport Phenomena of Cr1-xTe1+xAlloys in Paramagnetic State
Authors: Sekinobu Masaaki , Nogami Minoru
Published: November 2005

Hall effects and magnetic susceptibilities were measured onCr1-xTe1+x(0≤x≤0.19) alloys between their Curie temperatures and about 350°C. Ordinary Hall coefficientR0(positive) and extraordinary Hall coefficientR1(negative) are shown to be constant in this temperature region. Further, resistivity measurements reveal that these compounds are weakly temperature-dependent in resistivity with deflections at Curie points. Calculated Hall mobilities are 1.4×10-1to 2.5 cm2/v·sec. An estimated spin-orbit interaction field is consistent with 1.17×106Oe of 3d electrons in optical spectroscopy.
Inertia Effects in Magneto-Hydrodynamically Lubricated Hydrostatic Thrust Bearing
Authors: Shukla J. B. , Kapur V. K.
Published: November 2005

In this paper the effects of inertia in magneto-hydrodynamically lubricated hydrostatic thrust bearing with axial magnetic field are considered. It is shown that load capacity of the bearing and flow rate is not only dependent on the MHD interactions in the fluid but also on inertia effects.
Dielectric Property of Some Polymers in Low Temperature Region
Authors: Hara Tohru
Published: November 2005

Measurements of the dielectric property of various polymers are made at temperatures from -268°C to 20°C at various frequencies. Loss peaks are observed at -130°C (f=300 H
z
) for oxidized polyethylene, at -110°C (3 kHz) for oxidized polypropylene, at -59°C (3 kH
z
) for poly-bisphenol-A-carbonate, at -50°C (3 kHz) for ploy-tetrachlorobis-phenol-A carbonate and at -75°C (3 kHz) for cyanoethylcellulose, respectively. The absorptions are attributed to local mode relaxations in amorphous region, No distinct loss maxima are observed below these temperatures. An upswing of loss tangent is found in the vicinity of liquid helium temperature for poly-methylemthacrylate.
Crystallization of Amorphous Selenium Films Prepared by Vacuum-Evaporation
Authors: Shiojiri Makoto
Published: November 2005

An electron microscopic study was made on the crystallization of amorphous selenium films prepared by vacuum-evaporation onto glass at room temperature. The films were crystallized by irradiation of an electron beam, and changed into metallic selenium. The crystals grew most prominently in their a-axes with the (011̄0) surface planes. Small-angle-tilt and twist boundaries as well as twinning crystals were observed in the growing crystals. The generation of the twist boundaries and the twinning crystals are interpreted by mechanisms similar to those proposed in a previous paper (J. Phys. Soc. Japan 21 (1965) 335), and that of tilt boundaries is also interpreted by a modified mechanism.
Electrical Properties of Polyethylene Single Crystals
Authors: Miyoshi Yasuhiro , Chino Ken'ichi
Published: November 2005

The currents through polyethylene single crystals have been measured as functions of voltage and temperature between 200°K and 400°K. The negative resistance phenomena were sometimes observed when thin wire electrodes were used for measuring the current through polyethylene single crystals of 70–300 Å thickness, but their behaviors were different from those described by Roggen. In the case of vacuum evaporated electrodes, however, such phenomenon was not observed. Similar measurements have been done with polyethylene thin films formed by vacuum evaporation. In this case, the negative resistance similar to that described by Hickmott was sometimes observed.
Changes of specific resistance were closely related with the change of crystal thickness in thinner crystals, and the electron transport mechanism was discussed quantitatively with simple theoretical expressions of tunneling effect and Schottky emission.
The Latent Luminescence Centres in (Zn, Cd)S : Mn, Cu
Authors: Narita Kinichiro
Published: November 2005

The molecular study of energy transfer and luminescent transition mechanisms, and the roles of added activators on the performance of electro-optical effects by double excitation are reported for (Zn, Cd)S : Mn, Cu powders. The excitation sources were uv light and dc field. The highest value of “amplification factor” was about 70 and its brightness was nearly 100 ft-L. From the analyses of date on various samples, following conclusions were deduced. The majority of luminescence centres due to Mn ions are latent under either uv light or dc field. The luminescence from the centres due to Cu ions, corresponding to “G-Cu centres” in ZnS, domainates the one due to Mn ions under uv light excitation. Cu ions also play the roles of a sensitizer under simultaneous excitations. Sulfur vacancies and oxygen atoms make the characters of the centres due to Cu ions effective on double excitation. However, the actions of oxygen are complicated, because the incorporation of oxygen presumably introduces deep traps and makes the two kinds of luminescence centress due to Mn and Cu ions selective to exciting radiation.
A Flash Lamp with Toroidal Discharge Excitation
Authors: Hattori Shuzo , Goto Toshio
Published: November 2005

Several properties of a Xe toroidal electrodeless discharge as an intense flash-light source for photo-chemical and laser applications are studied. Spectral energy distributions are studied in the pressure range from 6 to 0.02 Torr. The numerical values of luminous flux, radian flux and efficiency are estimated roughly. The spectral energy distribution changes essentially in the pressure range from 1.5 to 1 Torr. At pressures above about 2 Torr, the emission spectra are mainly composed of the continuum and the XeI spectrum. At a pressure of 0.1 Torr, only lines of XeII and XeIII are found. The direct excitation process seems to be predominant and p-states are excited favorably in these toroidal discharges. They may be regarded as advantageous for active materials of the so-called gaseous ion lasers.
Effects of Specimen Thickness and Orientation on Weight Loss of α-Brass Single Crystals due to Heating in Vacuum
Authors: Yamaguchi Hiroyuki
Published: November 2005

Alpha-brass single crystals whose surfaces are parallel to {100}, {111} and {112} planes were heated at various temperatures in vacuum and effects of their thickness and orientation on the weight loss during heating were studied. Dislocation arrangements are examined by an etch-pit technique and by an electron microscopy. The dimensional change of the crystals by heating is also examined. The apparent activation energy of zinc diffusion is affected by specimen thickness and orientation. Their values for the {112} specimens of 0.35, 0.65 and 1.20 mm in thickness are 1.65, 1.64 and 1.63 eV, respectively, whereas those for the 1.20 mm in thickness are 1.65, 1.64 and 1.63 eV, respectively, whereas those for the 1.20 mm specimens having {100} and {111} planes are 1.66 and 1.64 eV, respectively. These differences are quantitatively interpreted from stress caused by the zinc diffusion.
Theory of the Conduction of Heat in Foamed Plastics
Authors: Oka Syoten , Yamane Kuniko
Published: November 2005

The relationships between the thermal conductivity of a foamed plastic and the volume fraction of cells are studied theoretically for a statistical cell model, a special closed-cell model and a special open-cell model under the assumption of one-dimensional flow of heat. The thermal conductivity of the open-cell model is expressed as a function of the volume fraction of cells by solving a cubic equation. The thermal conductivity of each model is shown graphically as a function of the volume fraction of cells.
Experimental Study on the Out-Diffusion of Sb from Ge and Its Application to Transistors
Authors: Makimoto Tsugio
Published: November 2005

An analytical solution for the double diffusion problem which consists of in- and out-diffusion is given. An experimental method to get the evaporation velocity, K, is proposed. K is obtained as 2.9×10-8 cms-1 at 700°C and has the activation energy of 1.75 eV. The double diffusion method is applied to Ge base-diffused transistors. Changes in some electrical characteristics with the out-diffusion conditions are given, which are in satisfactory agreement with the theory. The impurity distribution profile of the base layer is improved by making use of the double diffusion method. The improvement ratio is obtained experimentally and compared with the theory.
Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes
Authors: Furukawa Yoshitaka , Ishibashi Yoshio
Published: November 2005

Transient phenomena in capacitance (C) and reverse current (I) were observed for Au-n-Type GaAs Schottky barrier diodes at different carrier concentrations in GaAs crystals. Both (C

i

-2-C

s

-2) and I

s
/I

i
, where subscripts i and s refer to the initial condition and the steady state after voltage application, respectively, approach certain values independent of voltage at high reverse voltages but dependent of carrier concentrations and trap densities. The transient phenomena disappear in crystals of high carrier concentrations, say, 2×1017 cm-3. The results are explained by trapping effects in the space charge layer. The trap density in boat-grown GaAs crystals is estimated to be of the order of magnitude of 1014 cm-3∼1016 cm-3.
Exchange Anisotropy in the Mixed Phase of γ-Fe2O3 and α-Fe2O3
Authors: Senno Harufumi , Tawara Yoshio
Published: November 2005

γ-Fe2O3 particles which were partially converted to hematite were found to exhibit properties characteristic of an exchange interaction between ferromagnetic and antiferromagnetic phases. Unidirectional torque was induced by the field cooling through Morin temperature, in the present system in the similar way as has been observed in a bulk specimen of reduced α-Fe2O3 by Iizuka and Iida.
Unidirectional torque as well as rotational hystereses at high fields were also observed at room temperature on specimens which were partially transformed in the magnetic field.
The Observation of Thick Specimens by High Voltage Electron Microscopy. Experiment with Molybdenite Films at 50-500 kV
Authors: Uyeda Ryozi , Nonoyama Minoru
Published: November 2005

This study was designed to investigate how much the maximum thickness of crystalline specimens which was adequate for transmission observation could be increased with the accelerating voltage. Molybdenite films of 0.5–7.0 microns thickness were used for specimens. Dislocations in films of about 0.5, 1, 2 and 3 microns were found to be observable under routine irradiating conditions at 50, 100, 200 and 500 kV, respectively. With focused irradiation the thicknesses were about 30% larger, although the image quality was low. Dislocation images were generally obtained when the effect of the so-called anomalous transmission, which disappears for very thick specimens, was apparent in the corresponding diffraction pattern. The theoretical background for images of thick specimens is discussed. Reference is also made to preliminary results obtained with silicon. No conclusion has been drawn on the voltage dependence of the maximum thickness of specimens adequate for transmission observation.
Theoretical Considerations of the Three-Level Maser Detector for the Far-Infrared
Authors: Shimoda Koichi
Published: November 2005

In the case when the pumping transition in a three-level system of a molecule does not exactly coincide with the output frequency of a maser oscillator, four different types of operation at off-resonance of the three-level maser detector are discussed. At first the use of pressure broadening is considered; secondly a method which observes the double-quantum transition and thirdly the other method which measures a change in population caused by the double-quantum pumping are considered, and finally the level shift due to the far-infrared input is considered.
It is found that the third method of double-quantum pumping in which three waves are involved is the most sensitive. The minimum detectable power of order 10-6W/cm2 with the resolving time of about 10-6s is expected in detecting the maser output at the far-infrared which differs from the resonant frequency of the detector by as large as 10 GHz.
Piezoelectric Effects in Selenium Rectifiers
Authors: Tanaka Tetsuro , Ishiguro Takehiko
Published: November 2005

Piezoelectric effect and inverse piezoelectric effect of a selenium rectifier, which are induced by ac strain and ac voltage, respectively, are studied. The piezoelectric effect changes with backward bias voltage, but the inverse effect is rather independent of the bias voltage. These effects are ascribed to the piezoelectricity of selenium crystals and the ordering of polycrystals at a barrier layer of the rectifier. The piezoelectric effect is more useful for the detection of ac strain of high frequency than the piezoresistive effect of semiconductor diodes.
The Formation Mechanism of Domain Etch Patterns in Triglycine Sulfate Crystals
Authors: Sawada Akikatsu , Abe Ryuji
Published: November 2005

Conditions necessary for obtaining domain patterns in triglycine sulfate-water system were studied. Effects of surface charge, stirring, undersaturation and composition of etchants were examined by rub technique, jet technique and observation of etched crystal surfaces.
Surface charge was necessary for revealing domains. Domain patterns were revealed at low undersaturations, while at high undersaturations dislocation pits. It was found that the positive glycinium ions play a major role in domain pattern detection while the negative sulfate ions a minor one.
Domain pattern formation by etching in triglycine sulfate is probably due to the difference in the rate of diffusion of the glycinium ions into the solution between at the positive and at the negative ends of the dipole. The relation between the conditions required for revealing domains and those for revealing dislocation pits is discussed on the basis of current theories of crystal dissolution.
Decrease of Built-in Voltage in Tunnel Diodes Caused by Irradiation
Authors: Wada Takao , Nakamura Toshio , Maruyama Azusa , Fukuoka Yutaka , Arizumi Tetsuya
Published: November 2005

When a germanium tunnel diode is irradiated by 7.2 MeV electrons with a total flux of ∼4.6 × 1017 electrons/cm2, the capacitance built-in voltage v

b
decreases with the increase in bombardment dose. The variation of the Fermi level obtained from the change in v

b
is about 0.040 eV for the total flux.
Considering that the carrier concentration of a heavily doped n-type germanium decreases with the electron irradiation, the Fermi level changes only in the n-side of the tunnel diodes. This calculated variation of the Fermi level in the n-side caused by the carrier removal is in good agreement with the above result.
Effect of Microwave and Magnetic Field on A. C. Josephson Currents
Authors: Yamashita Tsutomu , Onodera Yutaka
Published: November 2005

When microwave and magnetic field are applied to Josephson junction simultaneously, maximum Josephson currents I

J

n

of zero slope region in I-V characteristics are periodic in magnetic field. The phase difference between (n+1)th mode and n–th mode of I

J

n

was (1/λ0
d)·(h
c/2e) as expected theoretically. Josephson junction has a discrete voltage n
h
f/2e for both signs n=±1, ±2..., if microwave and magnetic field are applied to junction simultaneously. Uncertainty in the sign of induced voltage makes it probable to realize a logic element.
Electrostatic Instability of a Cylindrical, Collision-Free Injected Plasma of Zero Temperature in the Presence of Longitudinal Magnetic Field
Authors: Okuda Takayoshi
Published: November 2005

Electrostatic instability of a cylindrical, collision-free injected plasma of zero temperature in longitudinal magnetic field is investigated. In particular, our attention is directed towards the effect of steady radial velocities of the electron and ion on the instabilities ofm=0 andm=1, wheremis the azimuthal wave number. Linearized equations are set up to obtain the dispersion on the basis of the macroscopic picture and the quasi-static approximation. The result for the case of extremely low density shows that eight modes form=1 and sixm=0 may exist and the steady radial motions result in damping or growing of the electrostatic instability, depending on the condition. The approximate formulae for the rate of the damping or growing are presented.
Pressure Dependent Characteristics of an Ork Ridge Type Duoplasmatron Ion Source I. Discharge Characteristics
Authors: Watanabe Masanori , Suita Tokuo
Published: November 2005

The pressure dependence of discharge characteristics of an Ork Ridge type duoplasmatron ion source was studied with a Langmuir probe. It was found that the pressure dependent characteristics relate to the radial component of the magnetic field near the tip of the intermediate electrode. A fire ball of dense plasma is built up at the neck of the intermediate electrode and there a potential difference between the fire ball and anode. It was observed that the potential difference varied from 17 V to 50 V with variation in hydrogen gas pressure. The mean energy of electrons emerging from the anode aperture was measured by an A-C thermocouple. It amounts to 51 eV at a gas pressure of 0.06 Torr. The mean energy of electrons corresponds to the potential difference between the fire ball and anode.
Optimum Load Capacity of a Parallel Plate Slider Bearing with Nonuniform Magnetic Field
Authors: Ramanaiah Gundala
Published: November 2005

A theoretical study is made of parallel-plate slider bearing with a nonuniform magnetic field parallel to the plates and perpendicular to the direction of flow. By using the calculus of variations, the magnetic field profile for the maximum load capacity of the bearing is determined. The optimum magnetic field profile is a step function with the step location and step height ratio depending on the maximum field strength and the electric potential difference between the plates. For this magnetic filed profile, the load capacity of the bearing increases and the friction factor decreases as the maximum Hartmann number increases. Numerical values of the step location, load capacity, friction force, flow rate and electric current are provided for the case of short circuit.
A Liquid Helium Cooled Stage for an Electron Microscope
Authors: Watanabe Hiroshi , Ishikawa Isao
Published: November 2005

A liquid helium cooled stage for an electron microscope has been constructed. Liquid helium flows through a thin copper pipe around the specimen holder. The flexible pipe allows the specimen movement for observation. The holder and pipe are enclosed in a shield case which is kept nearly at liquid nitrogen temperature. The specimen temperature is controlled by the flow of helium, and is measured with an Au+Co-chromel thermo-element attached to the stage. The specimen can be exchanged by means of a usual mechanism without breaking the column vacuum.
Observation of magnetic effect in a superconducting film is described. In a defocused image of Nb3Sn film we observed the beam deflection due to the magnetic field pushed out of the film below the transition temperature. The inhomogeneity of the mixed state of a niobium film appeared as a zig-zag edge in the defocused image. The relaxation of the magnetic flux frozen in Nb3Sn film was recorded on a 16 mm cine-film.
Diffusion of Zinc in Gallium Arsenide under Arsenic Vapor Pressure
Authors: Fujimoto Masatomo , Sato Yasuo , Kudo Kiyoshi
Published: November 2005

The deffusion of zinc into gallium arsenide in the arsenic vapor has been investigated by means of the radioactivation analysis. In the range of low zinc concentrations, the diffusion coefficient of zinc D was nearly independent of its concentrations and changed to be concentration-dependent at higher zinc concentrations. Over the whole range of zinc concentrations investigated, D was found to decrease as the arsenic vapor pressure increased. These results may be explained by assuming that zinc diffuses due to an arsenic divacancy mechanism as in the case of manganese diffusion in gallium arsenide.
Photoelectric Properties of As2Se3Layers
Authors: Yoshida Okio
Published: November 2005

The photoelectric properties of As2Se3evaporated layers were investigated on “sandwich” type photocell. Current-voltage characteristics and persistence of photoconduction were found to depend not only on the nature of anode contact material, but also on surface conditions of the anode contact as in the case of Alcontact. The surface conditions are different depending upon whether an oxide layer is formed on the Alfirm or not. Upward bend of photocurrent in the current-voltage curve is attributed to tunneling mechanism through the insulating oxide layer. Whereas in early models the persistence of photoconduction was attributed to the trapping effect in the bulk layer, the data obtained demand a model based upon the change of barrier from blocking action to injecting action under illumination and a strong electric field.
Hole Surfaces in Indium Antimonide
Authors: Ohmura Yamichi
Published: November 2005

Hole surfaces in InSb are considered in an approximation within the second order k-p perturbation theory applied to \varGamma8 state.
The effective masses of the <111> ellipsoid which is the main feature of hole surfaces in low energy regions, are obtained in terms of the inverse mass parameters A, B and N from the analysis of dispersion relations as follows:

\frac{\hbar^{2}}{2m_{l}}=|A-\frac{N}{3}| and \frac{\hbar^{2}}{2m_{t}}=|\frac{1}{2A}(A
2+\frac{AN}{3}-2B
2)|.

Numerical evaluations are carried out and for ease of visualization energy contours of hole surfaces are illustrated in (001), (11̄0) and (111) sections. The parameters used are Bagguley et al.'s cyclotron resonance data and the value of Δ
E, the maximum energy in the <111> direction measured from that of k=0, equal to 5×10-4 eV.
Demagnetization Cryostat for Mössbauer Effect Experiments
Authors: Shinohara Motoo , Ishigaki Atsushi , Ôno Kazuo
Published: November 2005

A demagnetization cryostat for use in Mössbauer effect experiments is described. Thermal contact of the paramagnetic salt with the liquid helium bath was established with a mechanical heat switch. 50 g of CrK alum was used as the refrigerant. Temperature of the alum reached 0.08°K after demagnetization and took 3 hours to rise to 0.3°K, the liquid helium bath being held at 1.8°K. The magnetic hyperfine structure of FeCl2·4H2O (T

N
≃1°K) has been observed by employing this cryostat.
Behaviors of Eutectic Crystals below Their Eutectic Points
Authors: Tino Yosiaki , Asahi Nobuo
Published: November 2005

The present investigation is concerned with an anomalous eutectic reaction which takes place at a temperature lower than their ordinary eutectic points, provided that the eutectic system contains at least an intermetallic compound as one of the components. These experiments were carried out for the system of iron and silicon. It was found out that there are two kinds of diffusion rates of silicon into iron, which suggests that a liquid with concentration near to the composition of the compound FeSi is able to coexist with primary solid solutions of iron and silicon at a temperature lower than the ordinary eutectic points.
Voltage Signal due to Electron-Beam-Induced Conductivity in Semiconductors
Authors: Munakata Chusuke
Published: November 2005

A formula for a change in the terminal voltage due to the electron-beam irradiation is proposed for a d.c. biased semiconductor bar. The change is composed of three terms; an ohmic drop due to the irradiating beam current, an induced voltage due to the bulk electron voltaic effect and a signal due to the electron-beam-induced conductivity (β-conductivity). The last term, which is called β-conductive signal, is proportional to the square of electric field strength, or to the square of resistivity if the biasing current density is constant, and this was experimentally confirmed using a p-Ge bar whose volume and mean resistivity were 0.5×1×9.5 mm3 and 3.8 \varOmegacm, respectively. The current, energy and diameter of the irradiating electron beam were 0.1 nA, 20 KeV and about 10 µm, respectively.
Observation of Relaxation Mechanisms of Crystalline Polymers by Electron Microscopy
Authors: Nakafuku Chitoshi , Minato Kikuwo , Takemura Tetuo
Published: November 2005

Relaxation mechanisms of crystalline polymers have been clarified directly by electron microscopy.
In polyethylene, the “main dispersion” which is due to the micro Brownian motion of the main chain in the amorphous phase and the “grain boundary dispersion” for the time scale of one hour can be attributed to the motion of chains in the boundary region betweeen spherulites and the slip lamellae in a spherulite, respectively. In polychlorotrifluoroethylene the slip of lamellae in a spherulite with the time scale of one hour appears above the temperature region of the “main dispersion”. This indicates that the “grain boundary dispersion” coexists with the “main dispersion”. In polytetrafluoroethylene, the main fraction of the “crystalline dispersion” (β dispersion) is regarded as the “grain boundary dispersion” which is due to the slip of striations within the band.
Epitaxial Growth of Several F.C.C. Metals on KCl, KBr and KI Crystals Cleaved in Vacuum
Authors: Kato Teruo
Published: November 2005

The epitaxial growth of Au, Ag, Cu, Pd, Ni and Al on KCl, KBr and KI crystals cleaved in ordinary high vacuum (10-4–10-5 mmHg) has been studied by transmission electron diffraction, the effect of exchange of halogen ion in substrate crystals on the relation of the preferred orientation to the substrate temperature being especially watched. The exchange of halogen ion has no effect on the preferred orientation except the case with Pd on KI but has some effects on the epitaxial temperature, i.e. the latter shows a change characteristic of each metal with ionic radius of substrate halogen ion.
Dislocation Structure around Indentation in Barium Fluoride Crystals
Authors: Patel A. R. , Singh R. P.
Published: November 2005

Synthetic barium fluoride single crystals have been indented and the rosettes revealed by etching around the indentation have been studied. The rosette arms which consist of rows of pits are made up of two triangular patterns, oriented opposite to each other and superposed. By alternately polishing and re-etching the same surface, it is observed that the size of the triangular patterns forming the rosette, and the density of pits in the rosette arms, change. It is conjectured that the pits in the rosette arms are formed at the emergence of dislocation half loops. The change in the sizes of the two triangular patterns with the corresponding thickness polished, have been measured. The calculated inclination of the plane in which the dislocation half loops lie with the (111) surface of observation comes out to be approximately 70°. It may, therefore, be conjectured that the dislocation half loops lie in {111} cleavage planes. The implications are discussed.
Epitaxial Growth of CdSe Films Evaporated on Sodium Chloride
Authors: Yasuda Yukio
Published: November 2005

The orientation and structure of CdSe films evaporated on air-cleaved surfaces of sodium chloride were studied at various stages in film growth by means of a transmission electron microscope. The substrate temperature at which oriented overgrowth occurred was found to be about 130°C lower on step-rich regions than on step-free regions of the cleavage surface. This result is explained as the effect of coalescence in the initial stage of growth. In process of the growth in size of nuclei, thin layers of wurtzite type crystal grow on {111} planes of zincblende type crystals. The layers were found to be formed preferentially on the inclined {111} planes which intersect the rocksalt surface along <110>NaCl. This fact suggests that zincblende type crystals are apt to grow due to stacking of close-packed layers on these {111} planes. The structure of CdSe films on (111) surfaces of sodium chloride was also studied in connection with results in the cleavage surface.
Characteristics of Silicon Silicon-Dioxide Structures Formed by DC Reactive Sputtering
Authors: Iwauchi Shigeki , Tanaka Toshio
Published: November 2005

The C-V characteristics of silicon silicon-dioxide structures fabricated using DC reactive sputtering method were investigated. The fast interface states were able to be eliminated by subjecting the sample to high temperature treatment in inert gas flow and subsequent Al-treatment.
The surface state charge Q

s
s
was of the order of 1010 q·cm-2 in the sample treated in nitric acid prior to oxide deposition. The substitution of a hydrofillic pretreatment for the nitric pretreatment resulted in a negative Q

s
s
of approximately -5×1011 q cm-2.
This small Q

s
s
was stable under bias-temperature stressing at 300°C even without additional processing, and, on the other hand, the negative Q

s
s
could be stabilized with comparable ease by forming the usual phosphate glass layer on the oxide. This stable negative Q

s
s
is of interest from the viewpoint of practical application such as making normally off n-channel MOS transistors.
Comparative Optical Absorption Studies of K2NiF4 and KNiF3
Authors: Tiwari J. S. , Mehra A. , Srivastava K. G.
Published: November 2005

The absorption spectrum of K2NiF4 crystal has been measured at 77°K and compared with that of KNiF3 from the point of view of the magnetic ordering in the crystals. The smaller shifts of band maxima with temperature in K2NiF4 are attributed to the smaller Néel temperature of the crystal. The extra line observed in the 1
E

g

a
band is compared with similar line in KNiF3 and the molecular field approximation is found to give a reasonably good account of the observed results. The absorption bands in the ultraviolet region arising from the simultaneous electronic excitation of two nickel ions are discussed.
One-Third Resonance Extraction from INS AG Electron Synchrotron
Authors: Huke Kazuo , Kobayashi Yoshiyuki , Yamakawa Tatsuya , Yamaguchi Seitaro , Yamashita Sukeaki
Published: November 2005

Slow beam extraction from the INS-AG electron synchrotron was done by using a one-third resonance of the betatron oscillation. A current strip was used to change the number of the radial betatron oscillation per revolution from 2.25 to 7/3 and to enlarge the amplitude of the oscillation. The extracting beam orbit was analysed using an approximate Hamiltonian which has a separatrix represented by three straight lines and the result was in good agreement with that pursued by a computer. The properties of the extracted beam were as follows; The efficiency was 50% for electrons of 300 MeV up to 1 GeV. The maximum beam intensity was 4×1011 electrons per second. The maximum duty cycle was 3%. Phase volumes for the horizontal and the vertical motions were 10-3 rad cm and 0.75×10-3 rad cm, respectively. The beam transport system and the radiation shielding system are also described.
Intensity Anomaly in Kikuchi Lines of Molybdenite.
Authors: Takahashi Hidewo
Published: November 2005

Kikuchi patterns of normal and anomalous molybdenites [Uyeda: Acta Cryst. A24 (1968) 175] were taken with a high voltage electron microscope at 350 kV and 500 kV. Many of the Kikuchi lines were indexed systematically. The normal molybdenite is polytype 2H1, as is known, and the anomalous one is likely to be 2H2 or 2T. The anomalous extinction of 400 and 700, as pointed out by Uyeda, was observed for the normal molybdenite, while their structure factors do not vanish. It is concluded that this effect is not due to another polytype, but to a dynamical many-beam interaction.
Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube
Authors: Seki Hisashi , Moriyama Kooichi , Asakawa Izumi , Horie Souji
Published: November 2005

A theory based on a thermodynamic analysis is developed and compared with experimental results obtained for transport and epitaxial growth of GaAs in GaAs-AsCl3-H2 system. The transport rate of source GaAs and the growth rate of epitaxial layers are discussed as a function of the hydrogen flow rate, the source and substrate temperatures, the mole ratio of Cl2/H2, the reaction time and the substrate orientation. A reasonable agreement is found between the theory and experimental results except the effect of the substrate orientation on growth rate.
Evidence of Energy Transfer from Pair Gadolinium Ions to Other Rare Earths in Yttrium-Gadolinium Oxide Crystal
Authors: Ozawa Lyuji , Nishikawa Satoru
Published: November 2005

Energy transfer from gadolinium ions to other emissive rare earths in (Y, Gd)2O3 crystals is investigated by excitation spectra of the rare earth emissions. Noticeable energy transfer from gadolinium ions to Sm+3, Eu+3, and Dy+3 ions is observed when Gd+3 concentrations in the solid solution crystals are over 0.01 mole. The energy transfer to Tb+3 and Er+3 is also observed, but smaller. The evidence of energy transfer is not detected as for Pr+3, Ho+3 or Tm+3. Emission intensities of the rare earths as energy acceptors under direct excitation of the gadolinium ions increase with 2nd power of gadolinium concentrations between 0.01 and 0.1 mole. This indicates that the energy transfer arises from pair gadolinium ions. The optimum gadolinium concentration for the energy transfer is about 0.15 mole and this concentration slightly shifts to higher concentration side as concentrations of the energy acceptor ions increase. The transmission of energy involves radiationless process.
Nucleation of High-Field Domains in n-GaAs
Authors: Ohtomo Motoharu
Published: November 2005

Multiple high-field domains have been observed with a capacitive probe in relatively long samples (700∼1100 µ) ofn-GaAs with the resistivity of about 3 \varOmega-cm at room temperature. They usually appear during the first cycle of the current oscillation if the bias voltageVbis applied abruptly (dVb/dt\gtrsim1×1012V/s). While moving toward the anode, the most dominant one among them survives as a single domain in a few nanoseconds. From the comparison between the two kinds of contacts, it is deduced that the cathode contact is not essential to domain nucleation, but its inhomogeneity often gives rise to domain nucleation. In certain samples, anomalous time-dependent current saturations and large voltage drops appearing close to the cathode have been observed below the current instability threshold. They are well explained by the presence of large contact inhomogeneities.
Microheterogeneity of Glassy Films of As2Sx (x<3) and Dendritic Texture on the Glasses
Authors: Maruno Shigeo
Published: November 2005

Glassy films of As2S
x
with a continuous and optically uniform structure have been prepared by evaporation under the normal pressure in N2 gas, x ranging from 2.7 to 2.9. The microheterogeneity and a dendritic texture of the films have been studied by means of optical microscope, X-ray diffraction, electron microscope and chemical etching. X-ray powder data for the dendritic texture did not fit any compound listed in the A.S.T.M. data file but are essentially identical with the synthesized As2S2 (or As4S4). Electron micrographs of surfaces etched with NaOH solution indicated the microheterogeneity of the glassy films. The present results suggest that the glass film is a microheterogeneous system consisting of an aggregate mixture of As2S3 and As2S2 (or As4S4).
Amorphous Region in Oriented Polyoxymethylene
Authors: Miyaji Hideki , Hiroi Kaitsu , Asai Kenjiro
Published: November 2005

The texture of polyoxymethylene film, crystallized by drawing melt, was determined from X-ray high angle and low angle diffraction patterns. On the basis of this structure, a certain simplified model is proposed on the orientation of molecular chains in the amorphous parts of a sample, taking into account the results on dielectric dispersion. It is concluded that most of chains in these parts take rather helical form than random coil configuration connecting the adjoining lamellar crystallites, and the axes of helices are oriented around the draw direction with inclination less than 25°.
Saturation Electron Current in a Magnetic Field
Authors: Akazaki Masanori , Watanabe Yukio
Published: November 2005

In connection with the saturation electron current of a disk probe in a magnetic field, quantitative comparisons of experimental results with theoretical results are made for the large ratio of the electron mean free path λ
e
to the Debye length λ
D
, 102∼103. By taking account of the region of free motion of electrons between the probe and the diffusion region, the numerical conformity between these two results is reasonably improved.
When (ω
e
τ
e
)2≫1 (ω
e
: the electron cyclotron frequency, τ
e
: the electron mean collision time) and λ
e
/r

P
(r

P
: the probe radius) is relatively large, the rate of the decrease in the saturation electron current caused by a magnetic field is approximately expressed as a function of the Larmor radius r

B
and can be estimated by the measurable parameters of the electron temperature and the magnetic field instead of uncertain parameters λ
e
and τ
e
.
Electrode Voltage Drop in a Seeded Plasma
Authors: Hara Toshitsugu , Uchida Motokazu
Published: November 2005

The potential distribution in a duct has been measured in the presence of an externally applied voltage. The gas flowing through the duct has been a propane-oxygen combustion gas seeded with K2CO3 powder. The voltage-current characteristics has also been measured. The voltage drop is found to increase with the current density but to become independent of it above a critical current density. This critical current density and the voltage drop become smaller as the electrode temperature increases. It is concluded that the main causes of the voltage drop are the thin, cold gas layer near the electrode in the smaller current density region, and the arc column in the region above the critical. Also, it is suggested that the electrode materials in the MHD generator should be selected on the basis of its capability of enduring as high temperature as possible rather than of its low work function.
Improved Demagnetization Cryostat for Mössbauer Effect Experiments
Authors: Shinohara Motoo , Ishigaki Atsushi , Ôno Kazuo
Published: November 2005

Some improvements in a previously constructed demagnetization cryostat for use in Mössbauer effect experiments have been made. In the new design, a mechanical heat switch previously used for establishing thermal contact between the paramagnetic salt and the liquid helium bath was replaced with helium exchange gas; the use of vacuum-tight beryllium windows has made it possible. CrK alum or MnNH4 Tutton salt weighing 60 g was used as a cooling salt. The lowest temperature reached by using CrK alum was 0.025°K and temperature of the alum arrived at 0.05°K in 6.5 hr. The lowest temperature reached by using MnNH4 Tutton salt was 0.15°K and temperature of it was practically constant as long as liquid helium stayed in the bath. The magnetic hyperfine structure of K3Fe(CN)6 (T

N
=0.13°K) has been observed by employing this cryostat, and the internal magnetic field at the position of an iron nucleus in K3Fe(CN)6 was found to be 193 kOe.
The Observation of Thick Specimens by High Voltage Electron Microscopy. II. Experiment with Molybdenite Films at 50-1200 kV.
Authors: Uyeda Ryozi , Nonoyama Minoru
Published: November 2005

The maximum usable thickness of specimens, below which dislocation images were observable by transmission, was studied experimentally in the region 50–500 kV in the previous work [Japan J. appl. Phys. 6 (1967), 557]. The present work is a continuation of the previous one. The maximum usable thickness was determined by comparing the quality of images. The experimental result turned out to be 1.5, 2.5, 4.0, 5.0 and 6.0 µm at 100, 200, 500, 1000 and 1200 kV, respectively. These values are approximately proportional to β2=(v/c)2, although the value at 1200 kV is a little too high. The factors limiting the observation of thick specimens, i.e. image intensity, resolution and contrast, are discussed. It is not yet clear whether the above result is common to other materials or is valid in the higher voltage region.
Secondary Electron Emission from Diffusion Pump Oils II. δ-η Analysis for DC-705
Authors: Goto Keisuke , Ishikawa Kazuo
Published: November 2005

Secondary electron emission (SEE) properties of DC-705 (Trade mark: Dow Corning Chemical Co.), which is a molecular substance, have been studied. Measurements were made on SEE coefficient and on in elastic reflection coefficient for primary energy E
p of 50–2000 eV at various thicknesses of DC-705 on a tungsten substrate. The maximum emission depth of inelastically reflected primaries is given as a function of E
p and is proportional to E
p

n
(n=2.1±0.3). The maximum emission depth of true secondary electrons is found to be 20–30 Å and independent of E
p for E
p higher than 400 eV. This value is much smaller than those for other molecular substances found by other workers. The possible causes are discussed. The efficiency of inelastically reflected electrons in producing true secondaries is 3 to 4 times larger than that of direct primaries.
Piezoelectric Properties of Modified PbTiO3 Ceramics
Authors: Ueda Ichiro , Ikegami Seiji
Published: November 2005

PbTiO3 ceramics with high density and high resistivity have been prepared by adding less than 5 mol % of Bi2/3TiO3, PbZn1/3Nb2/3O3 or their derivatives. These ceramics have dielectric constants of about 200, and can be poled at 200°C under a d. c. field of 40 to 70 kV/cm. The piezoelectric coupling factors k
15, k
33 and k
31 amount to 0.43, 0.35 and 0.068, respectively. The value of k
33 is nearly constant up to the Curie temperature of about 500°C. The aging rate of frequency constant does not exceed 0.1%/time decade. The present ceramics can be used as stable piezoelectric elements in high temperature and high frequency.
A Computational Method for Disk-Loaded Waveguides with Rounded Disk-Hole Edges
Authors: Nakamura Masao
Published: November 2005

A variational method using series expansions for fields is presented for computations of r
f quantities in metal disk-loaded waveguides commonly used in electron linacs. It allows for rounding of the edge of a disk hole. It is tested by a computer program, which calculates the guide radius or the frequency with all the other dimensions and the guide wavelength prescribed, as well as r
f parameters and fields. Good agreement has been found between computed and experimental values for quantities such as the group velocity and the shunt impedance. For one type of cell, however, there is discrepancy of the order of a few hundredth of one percent between computations of the guide radius or frequency and the experiment. Computations using a least squares method yield still worse results. This is attributed to the presence of some singularities within the disk. A technique for avoiding this difficulty is proposed.