Electrical Characterization of Gallium Nitride Thin Film Synthesized By Electrochemical Deposition Method
Authors: Ali Abdulraoof I. , Nel Jacqueline M. , Meyer Walter E. 
Published: May 2020

Introduction
: Group III-nitride semiconductor materials are the basis of modern electronic allowing for the development of diodes, transistor, LEDs and photovoltaic. Newer generation of semiconductors rely heavily on nanotechnology and advance in nanomaterials. Group III-nitride semiconductor materials such as GaN, AlN and InN are promising materials since their properties are ideal for use in optoelectronic devices, high power and high temperature electronic devices. These materials have wide energy band gaps between 1.9 to 6.3 eV and, for electronic applications, these materials are usually synthesised by means of chemical vapour deposition or molecular beam Epitaxy and these techniques are high cost, and recently room temperature electrochemical growth.The advantages of electrochemical deposition are the controllability of the thickness and surface morphology by varying the deposition parameters, cost-effectiveness, the minimum waste generation, long bath lifetime and easy set-up, in this study room tempreature electrochemical deposition has been used to synthesis the GaN nitride on Si.

Summary: the GaN thin films grown by electrochemical deposition on Si (111) substrate using mixture of Ga(NO3)3 and NH4NO3, then dissolved in deionized water at the room temperature with different current of deposition after investigated the grown by using XRD, SEM and AFM, thereafter fabricated the Schottky diode on the GaN thin films and measured the IV, CV and DLTS on it.

Result:

The XRD results of GaN thin films grown under the different conditions are shown in Figure 1. Sample a (1 mA during 30 mint) and b (3 mA during 30 mint) were prepared at room temperature at an electrodeposition current of 1 mA, 3 mA for 30 respectively. The XRD analysis showed the presence of hexagonal and cubic structure with crystallite sizes ranging from 130 to 140 nm. From AFM and SEM images, however, the results varied with growth conditions and substrate. Good quality Schottky diodes was shown on the GaN thin film and DLTS measurements were performed.

Introduction
: Group III-nitride semiconductor materials are the basis of modern electronic allowing for the development of diodes, transistor, LEDs and photovoltaic. Newer generation of semiconductors rely heavily on nanotechnology and advance in nanomaterials. Group III-nitride semiconductor materials such as GaN, AlN and InN are promising materials since their properties are ideal for use in optoelectronic devices, high power and high temperature electronic devices. These materials have wide energy band gaps between 1.9 to 6.3 eV and, for electronic applications, these materials are usually synthesised by means of chemical vapour deposition or molecular beam Epitaxy and these techniques are high cost, and recently room temperature electrochemical growth.The advantages of electrochemical deposition are the controllability of the thickness and surface morphology by varying the deposition parameters, cost-effectiveness, the minimum waste generation, long bath lifetime and easy set-up, in this study room tempreature electrochemical deposition has been used to synthesis the GaN nitride on Si.

Summary: the GaN thin films grown by electrochemical deposition on Si (111) substrate using mixture of Ga(NO3)3 and NH4NO3, then dissolved in deionized water at the room temperature with different current of deposition after investigated the grown by using XRD, SEM and AFM, thereafter fabricated the Schottky diode on the GaN thin films and measured the IV, CV and DLTS on it.

Result:

The XRD results of GaN thin films grown under the different conditions are shown in Figure 1. Sample a (1 mA during 30 mint) and b (3 mA during 30 mint) were prepared at room temperature at an electrodeposition current of 1 mA, 3 mA for 30 respectively. The XRD analysis showed the presence of hexagonal and cubic structure with crystallite sizes ranging from 130 to 140 nm. From AFM and SEM images, however, the results varied with growth conditions and substrate. Good quality Schottky diodes was shown on the GaN thin film and DLTS measurements were performed.

Figure 1