bluuebunny/crossref_metadata_2025 huggingface dataset:
Przerwanie biegu przedawnienia roszczeń przez wszczęcie mediacji
Authors: Kuźmicka-Sulikowska Joanna
Published: February 2017

Artykuł dotyczy kwestii przerwania biegu przedawnienia roszczeń przez wszczęcie mediacji. W artykule poddano analizie ten przypadek, przedstawiając go najpierw w kontekście pozostałych przewidzianych w Kodeksie cywilnym przyczyn przerwania biegu przedawnienia, które budzą liczne kontrowersje, i na tym tle pokazano, że wątpliwości interpretacyjne powstają także w odniesieniu do tej przyczyny przerwania biegu przedawnienia, zwłaszcza jeśli chodzi o mediację inicjowaną przez stronę. Wynikają one przede wszystkim z tego, że choć zgodnie z art. 1836 § 1 k.p.c. wszczęcie mediacji następuje z chwilą doręczenia przez stronę mediatorowi wniosku o przeprowadzenie mediacji (z dołączonym dowodem doręczenia jego odpisu drugiej stronie), to jednak nie uregulowano prawnie sytuacji, gdy wniosek taki zawierał będzie braki formalne (a poglądy doktryny co do tego, czy możliwe jest ich uzupełnienie i wszczęcie wówczas mediacji, a co za tym idzie – przerwanie biegu przedawnienia, są diametralnie zróżnicowane). Ponadto źródłem wspomnianych wątpliwości jest też art. 1836 § 2 k.p.c., w którym ustawodawca przewidział cały szereg przypadków, w jakich pomimo prawidłowego doręczenia wspomnianego wyżej wniosku nie będzie dochodzić do wszczęcia mediacji. W artykule poddano je dokładnej analizie, ze szczególnym uwzględnieniem wpływu takich sytuacji na przerwanie biegu przedawnienia roszczeń (w tym oceniając zasadność tych rozwiązań prawnych oraz odnosząc się do poglądów doktryny i zgłaszając uwagi de lege ferenda). Podniesiono także kwestie wiążące się z przedawnieniem w przypadku, w którym to sąd kieruje strony do mediacji.
Umorzenie postępowania karnego według art. 62a ustawy z 2005 r. o przeciwdziałaniu narkomanii
Authors: Muszyńska Anna , Łucarz Katarzyna
Published: February 2017

Autorki, na tle rozwoju rozwiązań prawnych stosowanych wobec sprawców przestępstw "drobnego posiadania" substancji zabronionych, dokonały obszernej analizy nowej instytucji z art. 62a u.p.n. Regulacja ta zakłada możliwość umorzenia postępowania wobec wspomnianej kategorii sprawców. Omawiając tę konstrukcję normatywną, autorki wskazały jednocześnie obszary, które są wadliwe i stąd wymagają pilnej interwencji ustawodawcy.
Obrona konieczna a przestępstwo bójki
Authors: Banaszak Paulina
Published: February 2017

Jedną z najbardziej kontrowersyjnych kwestii na gruncie instytucji obrony koniecznej jest to, czy uczestnik bójki może powołać się na ten kontratyp. Przed przystąpieniem do szczegółowej analizy tego zagadnienia autorka scharakteryzowała zarówno instytucję obrony koniecznej, jak i przestępstwo bójki. Z uwagi na to, że problematyka ta nie jest w pełni wyjaśniona, co pociąga za sobą liczne spory i kontrowersje, celem niniejszego artykułu było wskazanie podstawowych problemów, które dotyczą tej kwestii, zaprezentowanie poglądów doktryny polskiego prawa karnego, wybranych rozstrzygnięć sądów i próba wyrażenia opinii, czy uczestnik bójki może powoływać się na działanie w obronie koniecznej. Konstatacją wynikającą z podjętych rozważań pozostaje twierdzenie, że możliwe jest wskazanie pewnych sytuacji, w których można będzie uznać, że osoba biorąca udział w bójce działa w obronie koniecznej.
Ryzyko gwaranta w świetle projektu nowelizacji ustawy Prawo zamówień publicznych
Authors: Lenhardt Sergiusz
Published: February 2017

Niniejszy artykuł poświęcony został tematyce ryzyka gwaranta związanego z postępowaniem o udzielenie zamówienia publicznego. Szczególną uwagę zwraca się w nim na rolę gwarancji we wspomnianym procesie oraz na zagrożenia związane z ich sprzedażą. Celem artykułu było ukazanie zmian w kwestii ekspozycji na ryzyko gwaranta w związku z nowelizacją Prawa zamówień publicznych. Artykuł składa się zasadniczo z trzech części, tj.: wstępnej, w której przedstawiono rodzaje gwarancji występujące w postępowaniu o udzielenie zamówienia publicznego; drugiej ‒ dotyczącej szczegółów projektu ustawy oraz trzeciej ‒ opisującej zmiany ryzyka gwaranta w nowej rzeczywistości prawnej.
Dług samorządu – bodziec czy bariera absorpcji środków europejskich?
Authors: Jurewicz Daniel
Published: February 2017

Zadłużenie, a więc najogólniej rzecz biorąc, zobowiązania podlegające zwrotowi, nierzadko w doniesieniach medialnych traktowane jest jako pojęcie o pejoratywnej konotacji i negatywny aspekt funkcjonowania samorządów, zarówno regionalnych, jak i lokalnych, to jednak ze względu na przeznaczenie, przede wszystkim na finansowanie przedsięwzięć inwestycyjnych, w literaturze z zakresu prawa finansowego oraz ekonomii jest przedstawiane w zdecydowanie lepszym świetle. Jego występowanie w gospodarce finansowej jednostek samorządu terytorialnego (JST) nie stanowi przejawu nieprawidłowości występujących w procesie gospodarowania, a jest wręcz wyrazem prorozwojowej polityki władz lokalnych oraz regionalnych. Ograniczone zasoby finansowe samorządu spowodowały, że realizacja inwestycji, będących niezwykle ważnym stymulatorem rozwoju lokalnego, wymaga sięgania po zwrotne źródła finansowania. Obowiązujące regulacje prawne oraz możliwości pozyskiwania środków z funduszy Unii Europejskiej (UE) spowodowały, że dynamicznie rosnący w ostatnich latach dług JST służył przede wszystkim realizacji przedsięwzięć inwestycyjnych, które przynajmniej w zamierzeniach mają służyć rozwojowi wspólnot lokalnych. Włączenie Polski w struktury zjednoczonej Europy spowodowało, że to właśnie samorządy stały się największym inwestorem publicznym, przyczyniając się tym samym do rozwoju nie tylko poszczególnych regionów, ale również całej gospodarki krajowej. Realizacja poszczególnych przedsięwzięć inwestycyjnych budzi czasem zastrzeżenia i obawy, niemniej z samego założenia mają one służyć zarówno rozwojowi danych samorządów, jak również poprawie jakości życia ich mieszkańców. Mając na względzie te argumenty, zawarty w literaturze przedmiotu pozytywny obraz zadłużenia samorządowego jest uzasadniony. Istnieje jednak dość pokaźna luka w zakresie analizy aspektów negatywnych, jakie bez wątpienia występują.
Etyczne podłoże postaw maklerów papierów wartościowych i doradców inwestycyjnych
Authors: Langer Mateusz
Published: February 2017

Przedmiotem opracowania jest zbadanie doktrynalnych spoiw infrastruktury etycznej, które winny służyć zapewnieniu właściwej postawy moralnej profesjonalistom narażonym na pokusę przeprowadzenia transakcji spekulacyjnych. W szczególny sposób problem ten dotyczy osób zatrudnionych w sektorze usług finansowych na stanowisku maklera papierów wartościowych i doradcy inwestycyjnego. Obszar badawczy został celowo ograniczony do tendencji formalizacyjnych etyki oraz roli procesów kodyfikacyjnych w jej kształtowaniu. Przede wszystkim po to, by wykazać redundantny wpływ unormowań etycznych na wybrane elementy rozwoju moralnego człowieka. Nadto niniejsza praca kładzie akcent na pełniejsze, niż to było dotychczas, wyjaśnienie regularnie występujących niedociągnięć argumentacyjnych narosłych wokół instytucjonalizacji etyki zawodowej z uwypukleniem tych racji, które dezawuują jej znaczenie przy rozstrzyganiu dylematów moralnych. Naszkicowana problematyka została przedstawiona na podstawie aktualnego dorobku doktryny, włączając się w ten sposób w wartki nurt jej rozważań.
HERODOTO AMESTRIDĖ, SOFOKLIO DEJANEIRA IR MIRTĮ NEŠANTIS APDARAS
Authors: Deligiorgis Konstantinos
Published: February 2017

Šio straipsnio tikslas – ištirti ir palyginti Herodoto Istorijos finalinėse scenose (9. 108–113) ir Sofoklio tragedijoje Trachinietės aptinkamą dovanos motyvą bei jo funkciją. Abiejuose skirtingų žanrų kūriniuose dvi moterys – Kserkso žmona Amestridė ir Heraklio žmona Dejaneira – savo vyrams dovanoja ypatingą drabužį, tačiau šios dovanos, priešingai gavėjų lūkesčiams, atneša ne džiaugsmą, o pražūtį. Tiek Amestridė, tiek Dejaneira lemtingais gyvenimo momentais susiduria su savo įtakingų vyrų neištikimybe ir imasi veiksmų, kad išsaugotų ir sutuoktinių meilę, ir savo padėtį visuomenėje. Abiejuose pasakojimuose šis motyvas yra esminis. Nuosekliai atskleidžiamos veiksmo aplinkybės išryškina dviejų moterų – graikės ir barbarės – charakterių bei kultūrų skirtumus.
SĄŽINĖS PROBLEMA EURIPIDO ORESTE
Authors: Dikmonienė Jovita
Published: February 2017

Straipsnyje tyrinėjama Euripido tragedijos Orestas sąžinės (ἡ σύνεσις, 396) problematika. Euripido Orestas lyginamas su Aischilo Choėforų ir Eumenidžių Orestu, Euripido Herakliu. Pasitelkus klasikinės filologijos mokslininkų tyrimus analizuojama sąžinės termino etimologija, su sąžinės priekaištais susiję jausmai, Euripido Oresto psichologinė būsena po motinžudystės, σύνεσις termino pavartojimo tragedijoje prasmė ir reikšmė. Svarstoma, kodėl Euripidas tragedijoje, priešingai nei Aischilas, parodė teismą, nesugebantį sustabdyti Oresto keršto. Teigiama, jog poetas Oreste pasišaipė iš negailestingų, panašių į kerštą teismo sprendimų ir žmogaus negebėjimo pripažinti savo klaidas.
DAR KARTĄ APIE TRISTIA EX MELITOGAUDO: ARGUMENTAI DISKUSIJAI
Authors: Fiorini Stanley , Vella Horatio C. R.
Published: February 2017

Šiame straipsnyje nagrinėjami poleminiai klausimai, kuriuos vis dar kelia pirmasis poemos, pavadintos Tristia ex Melitogaudo: Lament in Greek Verse of a XIIth-century Exile on Gozo, leidimas (Busuttil, Joseph, Stanley Fiorini & Horatio Caesar Roger Vella, eds. 2010. Tristia ex Melitogaudo: lament in Greek verse of a XIIth-century exile on Gozo. Malta: Best Print). Remdamiesi istorine bei filologine teksto analize leidėjai pagrindžia savo poziciją kai kuriais kritiniais klausimais ir atsako į M. D. Lauxtermanno straipsnyje (Lauxtermann, Marc D. 2014. Tomi, Mljet, Malta. Critical Notes on a Twelfth-Century Southern Italian Poem of Exile. Jahrbuch der Ősterreichischen Byzantinistik 64, 155–176) pateikiamus kritinius argumentus.
IDEALUS VALDOVAS PINDARO PIRMOJOJE OLIMPINĖJE ODĖJE
Authors: Tylaitė Lina
Published: February 2017

...
Safe Storage of Opioid Pain Relievers Among Adults Living in Households With Children
Authors: McDonald Eileen M. , Kennedy-Hendricks Alene , McGinty Emma E. , Shields Wendy C. , Barry Colleen L. , Gielen Andrea C.
Published: February 2017

OBJECTIVES:

To describe safe storage practices and beliefs among adults who have used a prescription opioid pain reliever (OPR) in the past year; to compare practices and beliefs among those living with younger (<7 years) versus older children (7–17 years).

METHODS:

A survey was administered to a nationally representative sample of adults reporting OPR use in the previous 12 months and who had children <18 years old living with them. We used Health Belief Model–derived items to measure beliefs. Safe storage was defined as locked or latched for younger children and as locked for older children. Regression models examined the association between beliefs and safe storage practices.

RESULTS:

Among 681 adults who completed our survey and reported having children in their home, safe storage was reported by 32.6% (95% confidence interval [CI], 21.4–43.8) of those with only young children, 11.7% (95% CI, 7.2–16.2) among those with only older children, and 29.0% (95% CI, 18.3–39.8) among those with children in both age groups. Among those asked to answer survey questions thinking about only their oldest child, the odds of reporting safe storage decreased by half as perceived barriers increased (0.505; 95% CI, 0.369–0.692), increased twofold as efficacy increased (2.112; 95% CI, 1.390–3.210), and increased (1.728; 95% CI, 1.374–2.174) as worry increased.

CONCLUSIONS:

OPRs are stored unsafely in many households with children. Educational messages should address perceived barriers related to safe storage while emphasizing how it may reduce OPR access among children.
Overdose Risk in Young Children of Women Prescribed Opioids
Authors: Finkelstein Yaron , Macdonald Erin M. , Gonzalez Alejandro , Sivilotti Marco L.A. , Mamdani Muhammad M. , Juurlink David N. ,   Canadian Drug Safety And Effectiveness Research Network (CDSERN)
Published: February 2017

BACKGROUND AND OBJECTIVE:

Over the past 20 years, the prescribing of opioids has increased dramatically in North America, with parallel increases in opioid addiction, overdose, and associated deaths. We examined whether young children of women prescribed opioids were at increased risk of opioid overdose.

METHODS:

We conducted a population-based, nested case control study in Ontario, Canada, between 2002 and 2015. We identified children aged ≤10 years, whose mothers received publicly funded prescriptions for an opioid or a nonsteroidal antiinflammatory drug (comparator analgesic) in the preceding year. Cases were children who presented to hospital for or died of opioid overdose. Each case was matched with 4 controls with no opioid overdose. The primary outcome was the risk of opioid overdose.

RESULTS:

We identified 103 children who presented to the hospital with opioid overdose and matched them with 412 controls. Half of the children with opioid overdose were <2 years old. Compared with controls, children with an opioid overdose were far more likely to have a mother who received a prescription opioid (unadjusted odds ratio, 2.41; 95% confidence interval, 1.68–3.45) and who was prescribed antidepressants. The most commonly implicated overdose opioids were codeine (53.4%), oxycodone (32.0%), and methadone (15.5%).

CONCLUSIONS:

Young children of mothers prescribed opioids are at a markedly increased risk of overdose. Physicians, pharmacists, and parents should take measures to mitigate the risk of opioid-related harm to children, such as prescribing smaller quantities, emphasizing the importance of secure medication storage, and the prompt disposal of unused opioids.
Expert Witness Participation in Civil and Criminal Proceedings
Authors: Paul Stephan R. , Narang Sandeep K. ,   COMMITTEE ON MEDICAL LIABILITY AND RISK MANAGEMENT, McDonnell William M. , Altman Robin L. , Bondi Steven A. , Fanaroff Jon Mark , Oken Richard L. , Rusher John W. , Santucci Karen A. , Scibilia James P. , Scott Susan M.
Published: February 2017

This Policy Statement was reaffirmed June 2024.

The interests of the public and both the medical and legal professions are best served when scientifically sound and unbiased expert witness testimony is readily available in civil and criminal proceedings. As members of the medical community, patient advocates, and private citizens, pediatricians have ethical and professional obligations to assist in the civil and criminal judicial processes. This policy statement offers recommendations on advocacy, education, research, qualifications, standards, and ethical business practices all aimed at improving expert testimony.
Expert Witness Participation in Civil and Criminal Proceedings
Authors: Narang Sandeep K. , Paul Stephan R. ,   COMMITTEE ON MEDICAL LIABILITY AND RISK MANAGEMENT, McDonnell William M. , Altman Robin L. , Bondi Steven A. , Fanaroff Jon Mark , Oken Richard L. , Rusher John W. , Santucci Karen A. , Scibilia James P. , Scott Susan M.
Published: February 2017

This Technical Report was reaffirmed June 2024.

The interests of the public and both the medical and legal professions are best served when scientifically sound and unbiased expert witness testimony is readily available in civil and criminal proceedings. As members of the medical community, patient advocates, and private citizens, pediatricians have ethical and professional obligations to assist in the civil and criminal judicial processes. This technical report explains how the role of the expert witness differs in civil and criminal proceedings, legal and ethical standards for expert witnesses, and strategies that have been employed to deter unscientific and irresponsible testimony. A companion policy statement offers recommendations on advocacy, education, research, qualifications, standards, and ethical business practices all aimed at improving expert testimony.
Synthesis and characterization of some abundant nanoparticles, their antimicrobial and enzyme inhibition activity
Authors: Khan Shams T. , Malik Ajmaluddin , Wahab Rizwan , Abd-Elkader Omar H. , Ahamed Maqusood , Ahmad Javed , Musarrat Javed , Siddiqui Maqsood A. , Al-Khedhairy Abdulaziz A.
Published: February 2017

Although the antimicrobial activity of the engineered nanoparticles (NPs) is well known, the biochemical mechanisms underlying this activity are not clearly understood. Therefore, four NPs with the highest global production, namely SiO2, TiO2, ZnO, and Ag, were synthesized and characterized. The synthesized SiO2, TiO2, ZnO, and Ag NPs exhibit an average size of 11.12, 13.4, 35, and 50 nm, respectively. The antimicrobial activity of the synthesized NPs against bacteria and fungi were also determined. NPs-mediated inhibition of two very important enzymes, namely urease and DNA polymerase, is also reported. The synthesized NPs especially Ag and ZnO show significant antimicrobial activity against bacteria and fungi including methicillin-resistant Staphylococcus aureus even at low concentration. The DNA polymerase activity was inhibited at a very low concentration range of 2–4 µg/ml, whereas the urease activity was inhibited at a high concentration range of 50–100 µg/ml. Based on their ability to inhibit the urease and DNA polymerase, NPs can be arranged in the following order: Ag > ZnO > SiO2 > TiO2 and Ag > SiO2 > ZnO > TiO2, respectively. As the synthesized NPs inhibit bacterial growth and suppress the activity of urease and DNA polymerase, the use of these NPs to control pathogens is proposed.
Virulotyping of Shigella spp. isolated from pediatric patients in Tehran, Iran
Authors: Ranjbar Reza , Bolandian Masomeh , Behzadi Payam
Published: February 2017

Shigellosis is a considerable infectious disease with high morbidity and mortality among children worldwide. In this survey the prevalence of four important virulence genes including ial, ipaH, set1A, and set1B were investigated among Shigella strains and the related gene profiles identified in the present investigation, stool specimens were collected from children who were referred to two hospitals in Tehran, Iran. The samples were collected during 3 years (2008–2010) from children who were suspected to shigellosis. Shigella spp. were identified throughout microbiological and serological tests and then subjected to PCR for virulotyping. Shigella sonnei was ranking first (65.5%) followed by Shigella flexneri (25.9%), Shigella boydii (6.9%), and Shigella dysenteriae (1.7%). The ial gene was the most frequent virulence gene among isolated bacterial strains and was followed by ipaH, set1B, and set1A. S. flexneri possessed all of the studied virulence genes (ial 65.51%, ipaH 58.62%, set1A 12.07%, and set1B 22.41%). Moreover, the pattern of virulence gene profiles including ial, ial–ipaH, ial–ipaH–set1B, and ial–ipaH–set1B–set1A was identified for isolated Shigella spp. strains. The pattern of virulence genes is changed in isolated strains of Shigella in this study. So, the ial gene is placed first and the ipaH in second.
Suppression of Parasitic BJT Action in Single Pocket Thin Film Deep Sub-Micron SOI MOSFETs.
Authors: Najeeb-ud-Din  , Mohan Aatish K. , Dunga V. , Rao V. Ramgopal , Vasi J.
Published: February 2017

A study of parasitic bipolar junction transistor effects in single pocket thin film siliconon-insulators (SOI) nMOSFETs has been carried out. Characterization and simulation results show that parasitic bipolar junction transistor action is reduced in single pocket SOI MOSFETs in comparison to homogeneously doped conventional SOI MOSFETs. A novel Gate-Induced-Drain-Leakage (GIDL) current technique was used to characterize the SOI MOSFETs. 2 - D simulations were carried out to analyze the reduced parasitic bipolar junction effect in single pocket thin film SOI MOSFETs.
Microstructural Evolution and Defects in Ultra-thin SIMOX Materials during Annealing
Authors: Jeoung Jun Sik , Evans Rachel , Seraphin Supapan
Published: February 2017

The microstructure of ultra-thin SIMOX depends strongly on implantation dose, energy and annealing conditions. We used TEM combined with AES and RBS to determine the microstructural evolution of SIMOX wafers subjected to various temperatures during annealing. We found that an optimum dose window to produce a continuous buried oxide layer without Si islands is 3.0-3.5×1017 O+/cm2 for 100 keV. The thickness of the silicon overlayer and BOX layer produced in this dose window was about 170 nm and 75 nm respectively. RBS analysis showed that a high quality crystalline Si layer was produced after annealing at 1350 °C for 4 hrs. The defect density was very low (< 300/cm2) for all samples implanted at 100 keV.
X-Ray Reflectivity Study Of Exotic Materials For Electronic Applications
Authors: Russell C.H.
Published: February 2017

As device size continues to decrease, new challenges arise regarding shrinking dimensions, creating the need for thin, high-k dielectric materials, low-k dielectrics and other exotic materials. These new materials in turn create characterization issues, which cannot be resolved with traditional metrology tools. Critical structural parameters such as thickness, density, and interface roughness of a layer can be measured and monitored with X-ray reflectivity. A quick and reliable method of study regarding these materials is to base work on simulations using a very robust fitting program. This work incorporates a largely theoretical study of exotic materials of interest, including silicon oxynitride (SiOxNy), low-k (porous films) and high-k dielectrics (Ta2O5, HfO2), with a few selected experimental results.
A Self-Aligned Silicide Process Utilizing Ion Implants for Reduced Silicon Consumption and Control of the Silicide Formation Temperature
Authors: Cohen G. M. , Cabral C. , Lavoie C. , Solomon P. M. , Guarini K.W. , Chan K.K. , Roy R.A.
Published: February 2017

We propose a modified self-aligned silicide (salicide) process that uses Ge implantation and a silicon cap to reduce the silicon substrate consumption by 75% as compared with a conventional salicide process. We have used Ge implants to increase the cobalt disilicide formation temperature. This forces the cobalt to react primarily with a deposited silicon cap, thus minimizing consumption from the silicon substrate. We expect this process to be useful for making silicide on shallow junctions and thin SOI films, where silicon consumption is constrained.
Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation
Authors: Pan G.Z. , Chang E.W. , Rahmat-Samii Y.
Published: February 2017

We comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.
Micro-raman spectroscopic investigation of NiSi films formed on BF2+-, B+-and nonimplanted (100) Si substrates
Authors: Donthu S. K. , Chi D. Z. , Wong A. S. W. , Chua S. J. , Tripathy S.
Published: February 2017

Micro-Raman spectroscopic technique was used to investigate vibrational properties of NiSi thin films formed on three different (100) Si substrates: non-implanted, 20-keV BF2+-implanted, and 20-keV B+-implanted. Raman spectroscopy was also performed on NiSi powder to identify various phonon modes associated with different selection rules of group theory. It was found that Raman peaks of NiSi thin films formed on BF2+ implanted substrate were broader and shifted to lower frequency side compared to films formed on other substrates. The broadening of the Raman peaks in these films, which also exhibit much improved thermal stability, is attributed to small grains resulting probably from fluorine segregation to grain boundaries and interface. It is further proposed that besides grain boundary segregation, the excess fluorine in the film influences the stress-state in the silicide film resulting in shift of phonon peak positions.
Near-Field Ultrasonic Imaging: A Novel Method for Nondestructive Mechanical Imaging of IC Interconnect Structures
Authors: Shekhawat G. S. , Xie H. , Zheng Y. , Geer R. E.
Published: February 2017

The investigation of an alternate approach to nondestructive, nanoscale mechanical imaging for IC interconnect structures is reported. This approach utilizes a heterodyne interferometer based on a scanning probe microscope, also referred to as heterodyne force microscopy (HFM). This interferometer is sensitive to the relative phase difference of the two ultrasonic excitations due to spatial variations in the sample viscoelastic response and enables near-field, phase-sensitive imaging. Proof-of-feasibility demonstrations of this technique are presented for ultrasonic phase-imaging of Al/low-k interconnect structures. Spatial resolution <10 nm is demonstrated.
Post Blast Component Cleaning Techniques to Reduce Particle Generation in Etch and Deposition Chambers
Authors: Burgess Ronald , Laube Dave , Sidhwa Ardy , Spinner Chuck , Zheng Sanyi , Chew Tin Bun , Gandy Todd , Melosky Steve , Vetier Jerome
Published: February 2017

Particles emanating from the walls, shields, and other components of the chambers in which integrated circuit wafers are processed, are among the factors which have been shown to contribute to the formation of defect sites on the completed wafers. Typically, the generation rate of these particles is influenced by the final treatment that the surfaces of these components receive prior to installation in the chamber, whether or not the components are new or recycled. Parameters affecting one such source of particulate contamination have been examined in the present studies.
Evaluation of Contact and Via Step Coverage Using a Novel Two-Step Titanium Nitride Barrier Deposition Process
Authors: Sidhwa Ardy , Spinner Chuck , Gandy Todd , Brown William , Ang Simon , Naseem Hameed , Ulrich Richard
Published: February 2017

Aluminum plug technologies are still used for many different semiconductor device applications and are cost-effective processes. However, there are some disadvantages associated with them. The key disadvantage is aluminum junction spiking caused by aluminum diffusing down into the silicon substrate and silicon diffusing up into the aluminum plug due to a poor titanium nitride (TiN) barrier [1]. The tungsten plug process is primarily used for 0.5mm and smaller technologies. Titanium nitride barrier material plays an important role as an underlayer for tungsten plugs to prevent tungsten hexafluoride (WF6) from attacking the titanium (Ti) film [2]. The role of the TiN barrier is to retard or prevent diffusion of the materials that the TiN layer separates [3]. In this work, the authors investigated the TiN barrier film properties with respect to nitrogen flows at two different power set points and argon gas flows. Different experiments were performed to understand the properties of the TiN film with respect to process variables. Single-step and dual-step TiN barrier processes were studied for contact and via step coverage profiles used for aluminum and tungsten plug technologies.
A New Ultra-Low K ILD Material Based On Organic-Inorganic Hybrid Resins
Authors: Zhong Ben , Meynen Herman , Iocopi Francesca , Weidner Ken , Mailhouitre Stephane , Moyer Eric , Bargeron Cory , Schalk Paul , Peck Alan , Hove Marleen Van , Maex Karen
Published: February 2017

A ULK material based on a siloxane resin has been developed that can be processed using spin-coating and thermal cure to yield porous low-k films. The chemical bonds between the resin and porogen groups prevent the phase separation of the porogen from the resin during curing and lead to extremely small pores. The highly hydrophobic thin films made from this material displayed dielectric constant of 1.8, breakdown voltage of 4 MV/cm, a cohesive strength > 60 MPa, excellent crack resistance, and an average pore size of 2.2 nm by Positron Annihilation Lifetime Spectroscopy (PALS) and 2.5-3.0 nm by Ellipsometric Porosimetry (EP). In this paper, our strategy for designing low-k materials, the material properties and initial integration results for this new material will be discussed.
A New Approach of Thin-Film X-Ray Diffraction / Scattering Analysis for Ultra-Low-k Dielectrics with Periodic Pore Structures
Authors: Hata N. , Oku Y. , Yamada K. , Kikkawa T.
Published: February 2017

We propose and demonstrate experimentally a structural characterization technique for ultra-low-dielectric-constant thin films with periodic porous structures [1-3] by employing X-ray diffraction / scattering measurements. The analytical approach that we propose here takes into account specular reflection, incoherent scattering from random distribution of electron density, and coherent scattering from periodically modulated distribution of electron density. From the analysis, inter-pore distances and pore diameters in the directions perpendicular and parallel to the film surface are determined with which the film porosity is calculated. Thus obtained porosity is then used to discuss the film density and dielectric constant in comparison to those of non-porous reference sample.
Techniques for Localization of IC Interconnection Defects
Authors: Cole Edward I.
Published: February 2017

The advances in integrated circuit technology has made failure site localization extremely challenging. Charge-Induced Voltage Alteration (CIVA), Low Energy CIVA (LECIVA), Light-Induced Voltage Alteration (LIVA), Seebeck Effect Imaging (SEI) and Thermally-Induced Voltage Alteration (TIVA) are five recently developed failure analysis techniques which meet the challenge by rapidly and non-destructively localizing interconnection defects on ICs. The techniques take advantage of voltage fluctuations in a constant current power supply as an electron or photon beam is scanned across an IC. CIVA and LECIVA are scanning electron microscopy (SEM) techniques that yield rapid localization of open interconnections. LIVA is a scanning optical microscopy (SOM) method that yields quick identification of damaged semiconductor junctions and determines transistor logic states. SEI and TIVA are SOM techniques that rapidly localize open interconnections and shorts respectively. LIVA, SEI, and TIVA can be performed from the backside of ICs by using the proper photon wavelength. CIVA, LECIVA, LIVA, TIVA, and SEI techniques in terms of the physics of signal generation, data acquisition system required, and imaging results displaying the utility of each technique for localizing interconnection defects. In addition to the techniques listed above, the Resistive Contrast Imaging (RCI) for localizing opens on metal test patterns will be described as a starting point for the “IVA” technologies.
Plasma Enhanced Atomic Layer Deposition of ZrO2 Gate Dielectric
Authors: Koo Jaehyoung , Han Jiwoong , Choi Sungwoo , Park Chan Gyung , Kim Yangdo , Jeon Hyeongtag
Published: February 2017

Zirconium oxide (ZrO2) films were investigated as a potential replacement for silicon dioxide gate dielectric. ZrO2 films were deposited by both atomic layer deposition (ALD) and plasma enhanced ALD (PEALD) techniques using Zr t-butoxide and Zr(NEt2)4 as Zr precursors and oxygen as reactant gas. The XTEM images showed a randomly oriented polycrystalline structure of ZrO2 and amorphous characteristics of the interfacial layer. The calculated dielectric constant value of the ZrO2 films are about 10∼18 and these low values are believed due to the low dielectric constant interface layer. ZrO2 films deposited with oxygen plasma using Zr(NEt2)4 showed the leakage current of 3.12X10-9 A/cm2 at the gate bias voltage of -1.0 Volt with the equivalent oxide thickness value of 1.39 nm. ZrO2 films deposited with the oxygen plasma showed generally improved film quality with relatively low leakage current, small hysteresis and low carbon incorporation as well as the higher growth rate compared to the films deposited with the oxygen gas. Also, ZrO2 films deposited using Zr(NEt2)4 showed relatively improved film properties compared to the films deposited using Zr t-butoxide. This study demonstrated the possible application of PEALD technique for the high quality ZrO2 gate dielectric film deposition.
Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor
Authors: Conley J.F. , Ono Y. , Tweet D.J. , Zhuang W. , Solanki R.
Published: February 2017

HfO2 films have been deposited using anhydrous hafnium nitrate (Hf(NO3)4) as a precursor for atomic layer chemical vapor deposition (ALCVD). These films have been characterized using x-ray diffraction, x-ray reflectivity, atomic force microscopy, current vs. voltage, and capacitance vs. voltage measurements. An advantage of this precursor is that it produces smooth and uniform initiation of film deposition on H-terminated silicon surfaces. As deposited films remained amorphous at temperatures below ∼700°C. The effective dielectric constant of the film (neglecting quantum effects) for films less than ∼15 nm thick, was in the range of kfilm ∼ 10-11, while the HfO2 layer value was estimated to be kHfO2 ∼ 12-14. The lower than expected dielectric constant of the film stack is due in part to the presence of an interfacial layer such as HfSiOx. Excess oxygen may play a role in the lower than expected dielectric constant of the HfO2 layer. Breakdown of HfO2 films occurred at ∼5-7 MV/cm. Leakage current was lower than that of SiO2 films of comparable equivalent thickness.
High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices
Authors: Ng K.L. , Zhan N. , Poon M.C. , Kok C.W. , Chan M. , Wong H.
Published: February 2017

HfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.
Dielectric and Room Temperature Tunable Properties of Mg-Doped Ba0.96Ca0.04Ti0.84Zr0.16O3Thin Films on Pt/MgO
Authors: Kalkur T.S. , Yi Woo-Chul , Philofsky Elliott , Kammerdiner Lee
Published: February 2017

Mg- doped Ba0.96Ca0.04Ti0.84Zr0.16O3(BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structures of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 °C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm.
Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress
Authors: Lee Yi-Mu , Wu Yider , Hong Joon Goo , Lucovsky Gerald
Published: February 2017

Constant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2interface, and reduced gate-to-drain overlap region.
Composite X-ray Waveguide-Resonator as a Background for the New Generation of the Material Testing Equipment for Films on Si Substrates
Authors: Egorov V.K. , Egorov E.V.
Published: February 2017

Experimental research of the first composite planar X-ray waveguide-resonator (CPXWR) is presented. Model for an X-ray beam penetration across CPXWR is proposed. The model shows that the experimental data can be interpreted as the effect of the X-ray beam angle tunneling across small gap between two waveguide-resonators aligned consecutive. The assumption been made that the effect may open the key for the mechanism understanding of a hard electromagnetic radiation beam's management. Possibilities of the CPXWR practical using for creation of the X-ray new generation equipment for testing of thin film coating on Si substrates are discussed.
Effects of Poly-Si Annealing on Gate Oxide Charging Damage in Poly-Si Gate Etching Process
Authors: Chong Daniel , Yoo Won Jong , Chan Lap , See Alex
Published: February 2017

The effects of the poly-Si annealing on gate oxide charging damage in the gate etching process were investigated. Our electrical test results show that gate oxide charging damage can be reduced if the poly-Si is not annealed prior to the gate etching process.
Degradation Study of Ultra-thin JVD Silicon Nitride Mnsfets
Authors: ManjulaRani K. N. , Rao V. Ramgopal , Vasi J.
Published: February 2017

In this paper we discuss a new method for measuring border trap density (Nbt) in sub-micron transistors using the hysteresis in drain current. We have used this method to measure Nbt in jet Vapour Deposited (JVD) Silcon Nitride transistors (MNSFETs). We have extended this method to measure the energy and spatial distribution of border traps in these devices. The transient drain current varies linearly with logarthmic time. This suggests that tunneling is the dominant charge exchange mechanism of border traps. The pre-stress energy distribution is uniform whereas poststress energy distribution shows a peak near the midgap.
Dopant Profile in Silicon Processing
Authors: Sharma Ph D PE Kal. Renganathan
Published: February 2017

Non-Fickian effects are accounted for in dopant diffusion by the solution of hyperbolic mass wave propagative equation. The surface flux is represented by a modified Bessels composite function of first kind of 0th order in the open interval of τ>x.
Control of a Metal-Electrode Work Function by Solid-State Diffusion of Nitrogen
Authors: Lander R.J.P. , Hooker J.C. , Zijl J.P. van , Roozeboom F. , Maas M.P.M. , Tamminga Y. , Wolter R.A.M.
Published: February 2017

The work function of a metal gate electrode has been adjusted with the introduction of nitrogen by solid-source diffusion from an over-stoichiometric TiN1+x layer. RBS measurements have shown that measurable concentrations of nitrogen can be diffused into a 10nm Ta layer at moderate anneal temperatures (>500°C), and that this concentration increases with temperature in the range 500-1000°C. Capacitance-voltage measurements have been carried out on 10nm tantalum layers on Al2O3. These measurements have indicated that the work function of tantalum changes by -0.08eV due to the presence of the over-stoichiometric TiN1+x covering layer during anneal (800°C/30”). Similar C-V measurements have been carried out on 10nm molybdenum layers on SiO2 and on Al2O3 dielectrics. These have shown that the work function of molybdenum is substantially different for metal stacks with the TiN1+x covering layer after a similar anneal. The work function changes by -0.52eV for molybdenum on SiO2 and by -1.1eV for molybdenum on Al2O3. The results suggest great potential for molybdenum as a candidate for a single-metal dual-work function approach to integrating metal gates into future CMOS technologies.
Sr/Si Template Formation for the Epitaxial Growth of SrTiO3 on Silicon
Authors: Hu Xiaoming , Liang Y. , Wei Yi , Edwards J.L. , Droopad R. , Moore K. , Ooms W.J.
Published: February 2017

A novel silicon cleaning process using strontium metal thin films has been described. The silicon dioxide de-oxidation process using strontium as catalysts has been studied by X-ray Photoelectron Spectroscopy (XPS) and other in-situ techniques. A Sr/Si template for the epitaxial growth of SrTiO3 single crystals on silicon can be directly formed as a result of the above Sr-de-oxidation process. The de-oxidation mechanism can be explained after solving the interfacial structures of the Sr/SiO2/Si system with in-situ XPS.
Investigation of Light Initiated Oxidation of Hydrogen Passivated Silicon Surfaces: Hx-Si(100) and H-Si(111)(1X1)
Authors: Morse Kathleen A. , Pianetta Piero
Published: February 2017

There are factors present in cleanroom air that may lead to contamination prior to processing. These factors need to be better understood in order to meet tomorrow's requirement for atomically clean surfaces prior to gate oxidation. This paper identifies the conditions that initiate room temperature oxidation of fluoride prepared hydrogen passivated silicon surfaces by using X-ray Photoelectron Spectroscopy (XPS). Possible oxidation factors investigated include lighting conditions and ambient gases. Both Hx-Si(100) and H-Si(111)(1X1) surfaces do not oxidize in dark conditions and in 450nm wavelength lighting conditions for both humid and dry air ambients. These surfaces do oxidize in dry air and humid air when the surface is exposed to shorter wavelengths of light. Wavelength dependence for oxidation on both surfaces is confirmed. In addition, the level of oxidation observed depends on the surface orientation in humid air but not in dry air.
Development of Spin-on Pre Metal Dielectrics (PMD) for 0.10UM Design Rule and Beyond
Authors: Li Zhongtao , Zhou Xiaobing , Wyman Dave , Spaulding Mike , Kim Ginam , Grigoras Stelian , Choi DK , Moyer Eric
Published: February 2017

Spin-on pre metal dielectric (PMD) materials are being developed for memory and logic devices at 0.10 um design rules and beyond. The stringent design rules require a PMD material with a low thermal budget, excellent gap fill capability, and etch resistance similar to that of a thermal oxide. Spin-on PMD is being developed to meet these requirements as current PMD technologies of HDP CVD and BPSG reflow are constrained by void formation or high thermal budget requirement. One common challenge that faces spin-on PMD is inhomogeneous densification, or “corner etch”. In this paper EELS-STEM, FTIR, SEM and HF wet etching were used to study the mechanism of this phenomenon. This information provides a possible route for the development of spin-on PMD resins.
Strength-porosity relationship of nanoporous MSSQ films characterised by Brillouin Light Scattering and Surface Acoustic Wave Spectroscopy
Authors: Flannery C.M. , Wittkowski T. , Jung K. , Hillebrands B. , Baklanov M.R.
Published: February 2017

Nanoporous Methylsilsesquioxane films are a leading candidate for low dielectric constant (low-κ) materials for microelectronic interconnect. Mechanical strength reduces rapidly with lower κ (increasing porosity) however, and there is a lack of techniques to characterize these properties in the κ∼2 range. This work reports application of surface acoustic wave spectroscopy and Brillouin light scattering to characterization of density/porosity and Young's modulus values of a range of Methylsilsesquioxane films from different manufacturers. We show that the results are validated by independent measurements and that nanoindentation measurements consistently overestimate stiffness. The behaviour of 3 sets of films show different stiffness-porosity relationships, the initially stiffer materials declining more rapidly with increasing porosity than the softer materials. This has important consequences for stiffness properties in the κ<2 region.
Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control
Authors: Amada Takaaki , Maeda Nobuhide , Shibahara Kentaro
Published: February 2017

An Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.
Electrically Induced Junction MOSFET for High Performance Sub-50nm CMOS Technology
Authors: Dixit Abhisek , Dusane Rajiv O. , Rao V. Ramgopal
Published: February 2017

Degrading of short-channel effects (SCE) e.g. Drain-Induced-Barrier-Lowering (DIBL), charge-sharing etc., as CMOS devices are scaled into the sub-50nm regime, is a major roadblock for ULSI technologies. This problem can be circumvented to some extent by a proper scaling of MOSFET vertical dimensions (junction depths, oxide thickness etc.). In this work we propose a novel implementation of an electrically induced junction (EJ) MOSFET. An EJ-MOSFET is different from conventional CMOS device in that the gate voltage electrically induces the shallow source-drain extensions (SDEs). In such a device the SDEs are underneath the gate and contain low-doped regions of opposite conductivity as that of deep source-drain (S/D). In order to turn ON the device, a voltage is applied at the gate of EJ-MOSFET device, such that these low doped regions below poly-Si gate get inverted and serve as SDEs. Consequently, the effective channel length in this condition is the distance between these low-doped regions. On the contrary, at any gate voltage less than that required for inverting these regions, no SDEs are induced, and the effective channel length is equal to the physical separation between the deep S/D junctions.
Silicon Surface Chemical Treatments in Oxide/Nitride Dielectric Stack Properties
Authors: Jacques D. , Petitdidier S. , Regolini J.L. , Barla K.
Published: February 2017

Oxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on . However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.