bluuebunny/crossref_metadata_2025 huggingface dataset:
Mechanisms of the Reversible Electrochemical Insertion of LithiumOccurring With NCIMs (Nano‐Crystallite‐Insertion‐Materials)
Authors: Han S. D. , Treuil N. , Campet G. , Portier J. , Delmas C. , Lassègues J. C. , Pierre A.
Published: April 2008

A new family of insertion‐compound electrodes, so called NCIMs (Nano‐Crystallite‐Insertion‐Materials),
has been proposed: the major requirement is that the electrode materials have to be polycrystalline
with a crystallite and particle size as small as possible (the accepted definition being that many crystallites
make a particle). Indeed, by minimizing the size of the crystallites, the formation of defects bonds is
favored, particularly at the.crystallite surface, acting as reversible (de)grafting sites of Li+. Also, the
cation‐anion bonding is weakened not only in the grain boundary region but also within the crystallite
close to its surface: then the electrochemical insertion of Li+ takes place through easy bonding rearrangements.
Digitally Programmable Active‐R Function Generator
Authors: Abuelma′Atti Muhammad Taher
Published: April 2008

A new digitally programmable active‐R function generator circuit is presented. The circuit uses four
operational amplifiers, two operational transconductance amplifiers, and resistors. The circuit can provide
sinusoidal, square, and triangular waves with digitally programmable frequency. The frequency is
linearly proportional With the digital input.
Novel CCI‐OTA‐Based Grounded Capacitor Current‐Mode BiquadraticBandpass and Lowpass Filters
Authors: Abuelma′atti Muhammad Taher
Published: April 2008

A novel current‐mode active filter topology using a first generation current conveyor (CCI) and an
operational transconductance amplifier (OTA) is presented. Using this topology, grounded‐capacitor
biquadratic bandpass and lowpass filter sections, with at most five one‐port passive elements, are
realized. In these realizations, the parameter ω0 can be adjusted without disturbing the parameter ω0/
Q0
Immittance Spectroscopy of Smart Components and Novel Devices
Authors: Alim Mohammad A. , Khanam Sanjida , Seitz Martin A.
Published: April 2008

AC small‐signal immittance spectroscopy is employed as a viable tool to demonstrate electrical characterization,
performance improvement, and quality assurance issues of smart materials‐based components
and novel devices. The variation in the ac response, complemented via dc measurements within
a range of tolerating temperature, delineates competing phenomena occurring in the microstructures
of these engineering material systems. The results are presented in a generic manner with possible
explanations on the mechanisms for two selected Debye‐like (nearly ideal) and non‐Debye (non‐ideal)
low‐capacitance resistors. This spectroscopic approach allows systematic development of a representative
equivalent circuit, considered to be the characteristic of the devices and components, for specific
applications.
Influence of Intrinsic Trapping on The Performance Characteristics of ZnO‐Bi2O3 BasedVaristors
Authors: Alim Mohammad A.
Published: April 2008

The lumped parameter/complex plane analysis technique reveals several contributions to the ac small‐signal
terminal immittance of the ZnO‐Bi2O3 based varistors′ grain‐boundary response. The terminal
capacitance constitutes multiple trapping phenomena, a barrier layer contribution, and a resonance
effect in the frequency range 10-2 ≤ f ≤ 109 Hz. A trapping response near to ∼105 Hz (∼10-6 s),
observed via the loss‐peak and a distinct depressed semicircular relaxation in the complex capacitance
plane, is common to all well‐formed (exhibiting good performance for applications) devices regardless
of the composition recipe and processing route. This trapping is attributed to possible formation of
ionized intrinsic or native defects, and believed to be predominant within the electric field falling regions
across the microstructural grain‐boundary electrical barriers. The nature of rapidity of this intrinsic
trapping and the corresponding degree of uniformity/non‐uniformity can be utilized in conjunction with
relevant information on other competing trapping phenomena to assess an overall performance of these
devices. The constituting elements, responsible for the average relaxation time of the intrinsic trapping,
indicate some sort of possible surge arrester (i.e., suppressor/absorber) applications criteria in the
power systems′ protection. The factors related to materials′ history, composition recipe, and processing
variables influence or modify relative magnitudes and increase or decrease the visibility of the constituting
elements without distorting devices′ generic dielectric behavior.
Vector Kirchhoff Analysis for The Study of Rectangular Microstrip Antennas Immersed in a Plasma
Authors: Mital Prem Bhushan
Published: April 2008

The radiation properties of a microstrip antenna immersed in an ionized medium have since been
studied using potential function technique and linearized hydrodynamic theory. In the present paper,
Vector Kirchhoff AnalySis has been used for the study of rectangular microstrip antenna immersed in
a plasma media. Expressions for radiated far fields have been obtained using this analysis. The analysis
is mathematically precise and is used by reasonably approximating the actual aperture field distributions.
The effect of ion sheath in the vicinity of a rectangular microstrip antenna is also discussed.
Effects of Non‐Idealities of OP‐AMPs on Active Filters: An Analytical Study
Authors: Mital Prem Bhushan , Kumar Umesh
Published: April 2008

This paper studies the effect of non‐idealities of OP AMPs on the performance of active filters. The
non‐ideality is considered in terms of finite gain, finite gain‐bandwidth product, slew‐rate, and offset
voltages. The effect of these non‐idealities on active RC & switched capacitor filters is highlighted.
Some ways of reduction of these effects are also suggested and relative advantages and disadvantages
of various compensation techniques are discussed.
First‐Order Optical Phonon Processes in Amorphous Clusters
Authors: Caffaro M. A. Grado , Caffaro M. Grado
Published: April 2008

Optical absorption in the far infrared range for amorphous GaAs, SiC and Ge is investigated. Small
clusters in the context of dynamical disorder are considered. Average values of the absorption contributions
due to both dynamical and structural disorders are introduced. In particular, an equation for
the spectrum due to dynamical disorder in amorphous SiC is presented.
Time Domain Response of Uniform RC Lines With ResistiveTermination at Both Ends
Authors: Abuelma′atti Muhammad Taher
Published: April 2008

The time domain response of uniform RC lines with resistive termination at both ends is obtained by
obtaining the approximate poles of the transfer function. A simple model is developed for the URC
line. The model consists of three passive elements only and can be easily implemented for computeraided
analysis of URC lines with resistive termination at both ends.
A Chronological List of References on Switched Capacitor Networksand Techniques for the Period 1981‐1992
Authors: Singh A. K.
Published: April 2008

A chronological list of 440 references on switched capacitor (SC) networks from 1939 to May 1981 was
published in this Journal by J. Vandewalle. In this communication, we present a compilation of 1357
references covering the period from May 1981‐1992 (along with a supplementary list of 43 missing
references for the period before May 1981). The present compilation and the earlier one by Vandewalle
put together, thus, constitute an exhaustive bibliography of 1797 references on SC‐networks and techniques
till 1992.
Electronic Energy in Itinerant‐Electron Metamagnetism
Authors: Grado Caffaro M. A. , Grado Caffaro M.
Published: April 2008

Electronic energy in the context of itinerant‐electron metamagnetism is considered in a new way. In
particular, the minimal value of this energy is calculated within the Stoner model. To get this end, an
elliptic density of states is used.
Principles and Applications of Ceramic Humidity Sensors
Authors: Pelino Mario , Cantalini Carlo , Faccio Marco
Published: April 2008

This paper presents a brief review of the state of the art in humidity and gas ceramic sensors R&D; it
also describes the principle, fabrication and application of the humidity‐sensitive Si‐doped a‐hematite
(α‐Fe2O3) sintered compacts.
The humidity signal response is characterized by volt‐amperometric and impedance spectroscopy
techniques in the 0‐97% relative humidity (RH) range. The response time of the sensor is evaluated
by 0‐60% RH variations. Experimental techniques used to measure the hysteresis, drift, and aging of
the humidity setasor are presented and the results are discussed. The CO sensitivity is investigated by
activating the sensor in the 350‐450℃ temperature range.
A humidity‐meter prototype, based on the α‐Fe2O3 ceramic compact is described, and its electronics
and features are presented in this paper.
Characteristics of MOCVD‐Grown High‐Quality CdTe Layers on GaAs Substrates
Authors: Sze P. W. , Yarn K. F. , Wang Y. H. , Houng M. P. , Chen G. L.
Published: April 2008

CdTe epitaxial layers are grown successfully on a (100)‐GaAs substrate by metalorganic chemical vapor
deposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources.
The CdTe epilayers grown between 365°C and 380°C possess the best surface morphology. DETe is used
as the controlling species of this growth system. Typical growth rates are varied from 2.51µm/hr to
5.31µm/hr. Low‐temperature (12K) photoluminscence (PL) measurements reveal that 380°C is the best
growth temperature and the full width at half maximum (FWHM) of the dominated peak is about
1.583eV by the bound‐exciton emission of 9.38meV. The double crystal X‐ray rocking curves (DCRC)
indicate that the FWHM decreases while increasing the epilayer thickness and approaches a stable value
about 80 arc sec under the growth rate of 5.2µm/hr, the growth temperature of 380°C and the
DETe/DMCd concentration ratio of 1.7. The value of 80 arc sec in FWHM is the smallest one ever
reported to date.
On The Realization of Low/High Frequency CCII+ Based Oscillators Employing Grounded Resistors and Lossy Capacitors
Authors: Abuelma′atti Muhammad Taher , Khan Muhammad Haroon
Published: April 2008

New RC oscillator circuits are presented. Each circuit uses two second‐generation positive current‐conveyors,
three grounded capacitors and four grounded resistors. The circuits enjoy independent control
of the frequency and the condition of oscillation and are very attractive for integration. The circuits can
realize high and low frequencies of oscillation. Simulation results are included.
Programmable CF‐OTA‐Based Lowpassand Bandpass Filters
Authors: Abuelma′atti Muhammad Taher , Quddus Azhar
Published: April 2008

A new circuit is proposed for realizing lowpass and bandpass filter responses. The circuit uses one
current‐follower and one operational transconductance amplifier. The circuit enjoys low temperature
sensitivities, high input impedance and its important parameters are electronically programmable. The
use of grounded capacitors is an additional attractive feature for integration. Simulation results
confirming the theory presented are included.
Simulation of Crosstalk in High‐Speed Multi‐Chip Modules
Authors: Papaioannou D. A. , Avaritsiotis J. N.
Published: April 2008

Simulation results of the electrical performance at 1 GBits/sec of a number of different off‐chip interconnection
architectures are presented with emphasis given to the dependence of crosstalk and signal
delay on the geometries and dielectric constants of the insulating layers as well as on the widths and
separations of the conductors. The results indicate that signal delay and crosstalk may be reduced by
using low εr values for the dielectrics and that crosstalk may be also reduced by reducing the conductor‐to‐ground wire separation which simultaneously neutralises the role of εr value on crosstalk and line
impedance.
Analysis of the Charge Transfer in CCDSIncluding the Effect of Surface Statesand a Varying Fringing Field
Authors: Kumar Umesh , Mital P. Bhushan
Published: April 2008

In this paper, a general charge transfer equation is derived that includes the effect of the surface states
and does not assume a constant fringing field. Further, a detailed and simple method is presented for
the solution of this general charge transfer equation.
On the Stability of Resistively VariableCapacitors Using General ImpedanceConverters
Authors: Abuelma′atti Muhammad Taher , Khan Muhammad Haroon
Published: April 2008

The stability of three recently proposed circuits for realizing resistively variable capacitors is studied. It
is shown that the circuits may oscillate for practical values of active and passive components. Simulation
and experimental results are included.
Programmable Current‐Conveyor‐BasedOscillator Employing GroundedResistors and Capacitors
Authors: Abuelma′atti Muhammad Taher , Al-Ali Abdulrahman Khalaf , Ahsan Mohamed
Published: April 2008

A new programmable oscillator using two negative first‐generation current‐conveyors, three grounded
capacitors, and two grounded resistors is presented. The proposed circuit enjoys independent oscillation
control through a single grounded resistor and independent frequency control through a single grounded
capacitor. Replacing one of the grounded resistors by a digitally programmable resistor results in a
programmable oscillator.
Programmable Current‐Conveyor‐BasedVoltage‐Mode Filter with Single Inputand Five Outputs
Authors: Abuelma′atti Muhammad Taher , Quddus Azhar
Published: April 2008

A new universal voltage‐mode active‐filter with single input and five outputs is presented. The
parameters of the proposed filter are programmable and the filter uses grounded capacitors and
resistors. The proposed circuit can simultaneously realize lowpass, highpass, bandpass, allpass, and notch
biquadratic filter functions and enjoys low temperature sensitivities.
A Cumulative Study of PerformanceDegrading Factors in a High CapacityCellular Zone System
Authors: Mital Rajeev Kumar , Kumar Umesh
Published: April 2008

In high capacity cellular zone systems, cell size is reduced considerably: hence cells may be re‐defined
as microcells. The key point in microcell interference modeling is that the desired signal, as wall as
co‐channel interferers′ signals should have different statistics. A microcell interference model that
which provides different fading parameters to the concerned signals is used in this paper to evaluate
various performance degrading factors. Outage probability and spectrum efficiency have been calculated.
Various techniques to counteract the above mentioned interferences have been suggested.
Dielectric Anisotropy in PartiallyGrain‐Oriented Bi2VO5.5 Ceramics
Authors: Prasad K. V. R. , Varma K. B. R.
Published: April 2008

Ceramics obtained from quenching melts of prereacted polycrystalline Bi2V5.5 exhibit grain orientation
(~ 55%). Microstructural studies carried out using scanning electron microscopy (SEM) on subsequently
annealed ceramics show ferroelectric domains. These post‐annealed ceramics possess dielectric
anisotropies of about 1:1.2 at 300 K and 1:4.3 in the vicinity of the Curie temperature (~ 730 K)
between the directions parallel and perpendicular to the quenching direction. The dielectric constants
of the samples, obtained by quenching the melts, are higher than that of the post‐annealed ceramics.
Electrically poled and thermally cycled samples of both as‐quenched and post‐annealed exhibit
ferroelectric hysteresis loops at 300 K.
High Injection Effects on Solar Cell Performances
Authors: Mialhe P. , Affour B. , El-Hajj K. , Khoury A.
Published: April 2008

Experiments are performed on solar cells under concentrated sunlight in order to explore fundamental
physical processes with high injection conditions. Saturation effects are observed on the cell open circuit
voltage and on the extracted values of the recombination current. A large decrease of the initial decay
of the transient voltage have been measured. High injection effects are shown to be correlated with
the increase of recombination current in the space charge region together with an increase of the emitterbase
coupling.
Partially Active‐R Grounded‐Capacitor CFOA‐Based Sinusoidal Oscillators
Authors: Abuelma′atti Muhammad Taher , Khan Muhammad Haroon
Published: April 2008

New grounded‐capacitor CFOA‐based sinusoidal oscillator circuits with independent frequency control are presented. Experimental results are included.
An Experimental Study of Curved Rectangular Microstrip Antenna in Simulated Plasma Medium
Authors: Mital Prem Bhushan
Published: April 2008

The effect of plasma on the radiation characteristics of curved rectangular microstrip antenna is studied by means of a new plasma simulation technique. Unlike previous techniques [1,2], a relative index of refraction less than unity is obtained by representing free space with a high dielectric constant sodium chloride powder and plasma by a medium of lower dielectric constant (air). A wide range of dielectric constants of simulated plasma could be possible with this technique using solid dielectrics instead of liquids. It is observed that the resonance frequency is not affected by the curvature of the antenna. However radiation patterns are significantly affected.
Synthesis and Properties of Polyacrylamide‐Bismuth Halogenated Hybrids
Authors: Campet G. , Rabardel L. , Portier J. , Dweik H. S. , Subramanian M. A.
Published: April 2008

When solid polyacrylamide (PAam) is added to a solution of bismuth chloride, a polymeric salt of composition (CH2‐CH‐CONH2)n BiCl3 (n > 10) is obtained. This amorphous material is transparent in the visible. In this hybrid, bismuth seems to be coordinated both to amine and carbonyl groups. When the PAam‐BiCI3 hybrid is swollen with a KI solution, the corresponding iodide salt is formed with probably small particles of Bil3 precipitated into the polymeric matrix. Chemical, thermal, and optical (in the UV, visible, and infrared regions) properties of the salt and of the composite are studied.
Electrical Characterization of Engineering Materials
Authors: Alim Mohammad A.
Published: April 2008

Engineering material systems for smart components and novel device applications require a thorough understanding on the structure‐property‐processing relationships to optimize their performance. The factors determining performance characteristics of the multi‐phase/component heterogeneous polycrystalline hybrid (MPCHPH) systems are not identical to devices based on single‐crystal/single‐junction (SCSJ) technology. Performing SCSJ‐like data‐analysis on the MPCHPH systems can lead to confusion in delineating simultaneously operative phenomena when “physical geometrical factors”are used in normalizing the as‐measured electrical parameters or electrical quantities. Such an analytical approach can vitiate interpretation when microstructural inhomogeneity plays a key role in determining the electrical path. The advantage of using the as‐measured electrical parameters or electrical quantities constituting the “immittance function” is emphasized. The “state of normalization” using physical geometrical factors can only be executed for a specific phenomenon when isolated from the total electrical behavior.
Design and Analytical Study of Strays‐Insensitive Switched‐Capacitor Filters
Authors: Kumar Umesh
Published: April 2008

Use of analog circuit elements in active networks have become very common and the demand for their miniaturization is increasing day by day. Though several methods are available for the miniaturization of these elements through large scale integration on single chips, the performance is not very satisfactory in low‐frequency applications, due to the presence of parasitic capacitance that is comparable to the capacitance of active elements. As a result, the desired response gets deviated and also noise is involved. In this paper, an attempt has been made to devise methods for the elimination or reduction of the influence of these parasitic capacitances on filter circuits.
A Short Note on the Susceptibility in the Paramagnetic State for Disordered Itinerant‐Electron Metamagnetic Materials
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: April 2008

A formulation for the paramagnetic susceptibility of a typical disordered itinerant‐electron metamagnetic material is proposed by using a tight‐binding approximation. Moreover, some considerations on the susceptibility tensor are exposed.
On Cluster Calculation for Amorphous Tetrahedrally BondedSemiconductors
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: April 2008

This article consists of an approach to the calculation of the density of valence states in tetrahedrally
bonded amorphous semiconductors and, on the other hand, the paper contains theoretical
considerations on electronic spectra related to the results obtained by the authors concerning
cluster calculation. The exposition is centered on III–V compounds. Moreover,
operational methods are used to perform certain computations related to the previous subjects.
Electrostatic Repulsion Between Highly Injecting Metals: An Experimental Investigation
Authors: Dervos C. T.
Published: April 2008

This paper is an experimental investigation of the major implications brought in the crossing
resistance of mechanically contacted metals when operating in the high electronic injection
regime, i.e., steady state interfacial voltage values greater than the max. acceptable level
determined by specifications and less than the melting voltage. Under such operating conditions,
monolayers of positive ions may be formed within interfacial cavities filled by the
material from the surrounding space. The dominating ion neutralization process on the cathode
controls the formation of “Helmholtz” inner layers at the metal cathode+oxide+gas
interface. The presence of a positive ion monolayer over the cathode electrode will tend to
reduce the field threshold required for electronic field emission and affect the overall currentvoltage
characteristics.

The response of contacts operating under high charge injection is monitored on an
injected charge vs. interfacial field phase space, which clearly demonstrates non‐linear conductivity
phenomena and hysteresis effects for the examined structures. Experimental results indicate
convincingly the importance of the dielectric media around highly injecting metal contacts.
The excessive positive ion formation may also account for the experimentally observed
electrostatic repulsion between highly injecting metal contacts. Under low contact pressure
situations spontaneous separation of the current carying electrodes may occur. During a
spontaneous contact breaking process, the transient current and voltage profiles across the
metal contacts have been monitored using state‐of‐the‐art data logging systems. The importance
of the oxide capacitance and (time varying) gap capacitance on V(t) and I(t) profiles
has been discussed. The obtained results provide evidence for the positive ion layer formation
over the cathode electrodes.
Interfacial Dynamic Velocity for Solar Cell Characterization
Authors: Farah J. , Azar B. , Khoury A. , Mialhe P.
Published: April 2008

A new parameter for solar cell characterization has been introduced. The n–P junction has
been considered as an active interface and an interfacial dynamic velocity is defined at the
base boundary of the space charge region. We show that this interracial dynamic velocity
depends on the base width, base doping profile, and the recombination velocity at the device
back surface. Additionally, it is shown to be a function of the operating conditions such as the
applied potential and the illumination level.
New Universal Filter Using TwoCurrent‐Feedback Amplifiers
Authors: Abuelma′atti Muhammad Taher , Al-Zaher Husain Abdullah
Published: April 2008

A new universal voltage‐mode second‐order filter circuit is presented. The circuit has three
inputs and one low‐impedance output and can realize all the standard filter functions; lowpass,
highpass, bandpass, notch, and allpass, without changing the passive elements. The
proposed circuit uses only five passive components and enjoys independent control of the
natural frequency and the bandwidth, orthogonal control of the natural frequency and the
quality factor, as well as low active and passive sensitivities.
Harmonic Generation by Nondegenerate P‐N Junction Varactor Diodes
Authors: Abuelma′atti Muhammad Taher
Published: April 2008

This paper deals with the large‐signal analysis of nondegenerate p‐n junction varactor diodes. Expressions are obtained for the harmonics of the varactor diode current when driven by a sinusoidal voltage signal. The special case of relatively small input amplitudes is considered and the results are compared with previously published results.
An Improved Analysis for the Harmonic Distortion of MOS Voltage‐Controlled‐Resistors
Authors: Abuelma′atti Muhammad Taher
Published: April 2008

In this paper, a fourth‐order polynomial expression is obtained for the nonlinear current‐voltage characteristic of a MOS transistor operating in the triode region. Using this expression, closed‐form expressions are obtained for the second‐, third‐ and fourth‐harmonic distortion of a MOS voltage‐controlled‐resistors. The analytical expressions obtained in this paper can be used for a quantitative study of the effect of different parameters of the performance of MOS voltage‐controlled‐resistors.
A Molecular‐Orbital Model for Amorphous Group IV Semiconductors
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: April 2008

A theoretical model based on standard molecular‐orbital theory and extended Hückel approach
is proposed. This model is valid for amorphous group IV semiconductors and represents
a substantial improvement of the state of the art.
A New Low‐Expansion Composite in Lead Iron Niobate‐Lead TitanateSystem
Authors: Sai Sundar V. V.S.S. , Umarji A. M.
Published: April 2008

A composite prepared between lead titanate (PT) and lead iron niobate (PFN) exhibits low
thermal expansion coefficient (α) over the temperature range 300–673K. X‐ray, DTA, and
dilatometric measurements have been used to identify the optimum sintering condition, retaining
the individual constituent identity, to achieve overall low bulk thermal expansion. The
composite, PFN0.35PT0.65 sintered at 1223K for 15 min. and at 1253K for 60 min. are
sufficiently dense and show an overall α of –0.3 × 10–6/K and –1.2 × 10–6/K, respectively,
in the temperature range 300–673K.
A Brief Study on Energy in Itinerant‐Electron MetamagneticMaterials at Very Low Temperature
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: April 2008

Electronic energy is calculated explicitly for itinerant‐electron metamagnetic materials at
very low temperature. This calculation involves bandwidth and consequently volume, and it
has been performed by means of an elliptic density of states. Moreover, total energy is
considered.
A Minimum Component Grounded‐Capacitor CFOA‐Based RC Oscillator
Authors: Abuelma′atti Muhammad Taher , Al-Shahrani Sa′ad Muhammad
Published: April 2008

A minimum‐component grounded‐capacitor single‐frequency RC‐sinusoidal oscillator circuit using the current feedback operational amplifier (CFOA) is presented. The circuit uses a single CFOA, two resistors, and two grounded capacitors. The circuit enjoys low active and passive sensitivity characteristics.
Universal Current‐Conveyor‐Based Current‐Mode Filters with Single Input and Three Outputs
Authors: Abuelma′atti Muhammad Taher , Farooqui Amir Alam
Published: April 2008

Universal active current‐mode filters with single input and three outputs are presented.
The proposed filters avoid the use of external feedback in any part of the circuit and use
grounded resistors and grounded capacitors. The proposed circuits can simultaneously
realize lowpass, highpass, and bandpass filter functions.
Fabrication and Characterization of Multilayer Capacitors Buried in a Low Temperature Co‐Fired Ceramic Substrate
Authors: Chan Y. C. , Li G. Y.
Published: April 2008

Multilayer ceramic capacitors designed to be embedded in a low
temperature co‐fired ceramic substrate have been successfully
fabricated. Low and high value capacitors were respectively
embedded in the low K multilayer substrate and high K dielectric
layer. The buried capacitor has a capacitance density range (1
kHz) from about 220 pF/cm2 to 30 nF/cm2. The design took
material compatibility and shrinkage characteristics specifically
into account. The effects of heating rate and peak temperature
holding time on the densification of the laminate were studied.
The scanning electron micrograph revealed no evident cracking in
the fired components. The electrical properties of the buried
capacitors such as dissipation factor, insulation resistance and
breakdown voltage were studied and found to be good for device
application. The temperature dependence of the dissipation factor
and coefficient of capacitance for the buried capacitor was also
studied.
Diode Physical Parameters for HEXFETs Characterization of Dose Effect
Authors: Bendada E. , Raïs K.
Published: April 2008

Modeling techniques of P‐N junctions have been applied for studying the physical
parameters in metal‐oxide semiconductor field‐effect transistor structures. A parameter
extraction method provides a precise description of the changes in conduction processes
due to radiation damages in the integral body‐drain junction. A large increase of the
ideality factor and series resistance is related to radiation‐induced defects.
A Retrospection of Chaotic Phenomena in Electrical Systems
Authors: Kumar Umesh
Published: April 2008

In the last decade new phenomena have been observed in all areas of non linear
dynamics, principal among these being ‘Chaotic phenomena’. Chaos has been reported
virtually from every scientific discipline. This paper summarizes a study of the chaotic
phenomena in electrical systems and attempts to translate the mathematical ideas and
techniques into language that engineers and applied scientists can use to study ‘Chaos’.
Towards this end, the paper has summarized the study of chaos in several examples like
Chua’s circuit family; Folded Torus circuit; non‐autonomous circuits; switched
capacitor circuits and hyper‐chaos circuits. As observed in power systems, control
systems and digital filters, chaos has been exhibited and shown on examples.
An Analytical Study on the Local Electronic Density of States of the Valence Bands in Amorphous Silicon Carbide
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: April 2008

A formulation for the energy‐averaged local valence band density of states of
amorphous silicon carbide is derived. To this end, sp3‐type hybrid orbitals are employed.
Four Level Simulation of MOSFET
Authors: Doja M. N. , Moinuddin  , Kumar Umesh
Published: April 2008

In this paper a software (MOSOFT) has been developed for 4‐level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.
Insufficiencies of the Single Exponential Model and Efficiency of the Double Exponential Model in the Optimization of Solar Cells Efficiency
Authors: Zerga A. , Benyoucef B. , Charles J.-P.
Published: April 2008

Single and double exponential models are confronted to determine the most adapted
model for optimization of solar cells efficiency. It is shown that the single exponential
model (SEM) presents some insufficiencies for efficiency optimization. The interest of the
double exponential model to optimize the efficiency and to achieve an adequate
simulation of the operation of solar cells is demonstrated by means of I-V
characteristics plotting.
Electroluminescent Display with Picture Storage
Authors: Porada Z. , Schabowska-Osiowska E.
Published: April 2008

Memory cells, composed of PC and EL thin film elements, have been utilized to
designing of a display with picture storage. Such a picture storing electroluminescent
display may prove competitive with used now picture storing methods in the digital
form. A mathematical model suitable for analysing the properties of a PC‐El system is
proposed and the preparation of PC and EL thin film elements is described. For a single
pixel the dependences of output signal on the time for various values of amplitude and
frequency of supplying voltage are presented.
A Quantitative Analysis of Tunneling Current in A MOS Cell for ALow‐Voltage Microcontroller
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: April 2008

The tunneling current density in a MOS cell for a low‐voltage microcontroller based on
EEPROM is calculated for high electric strengths. Furthermore, this current density is
discussed in terms of the oxide thickness and an approximate expression for the velocity
of charge carriers is derived.
A Model Based Upon the Cross‐Correlation Function Between the Potential and Wave Functions for Disordered Solids
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: April 2008

A formulation for the cross‐correlation function between the potential and Schrödinger
wave functions with respect to the spacing between consecutive atoms in an infinite one‐dimensional
disordered solid is proposed. In this theoretical model, the argument of the
above cross‐correlation function is the spacing in question which is regarded as a
random variable.
Material Dispersion in Intrinsic GaAs for the Far‐Infrared Range
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: April 2008

An expression for the coefficient of material dispersion in intrinsic gallium arsenide for
the far‐infrared range is derived. From this result, the variation of the group index in the
above range is discussed.
Measurement of Self‐Heating Affected Dynamic Error of Precision Wire‐Wound Resistors
Authors: Szepessy Zsolt
Published: April 2008

This paper presents the thermal dynamic model of wire‐wound resistors. In order to
identify the thermal model an active bridge circuit is discussed. The power step response
of the wire‐wound resistors can be measured with the resolution of 1 ppm using the
detailed circuit. Experimental results are also presented.
Synthesis of Hybrid Electrochromic Material Based on Tungsten Oxide
Authors: Kim B. W. , Portier J. , Park N. G. , Campet G.
Published: April 2008

This paper reports first on general considerations on electrochromic materials in order to
present, afterwards, electrochromic films having a hybrid PAA (polyacrylic acid)‐WO3
structure. The films are prepared by successive coatings of polyacrylic acid‐ethanol solution
and tungsten oxide NH4OH‐water one.
Fuzzy Logic Transformer DesignAlgorithm (FLTDA)
Authors: Mudholkar R. R. , Sawant S. R. , Tengshe G. G. , Bagwan A. B.
Published: April 2008

In the present communication we report a novel fuzzy based algorithm developed for
transformer designing. The Fuzzy Logic Transformer Design Algorithm (FLTDA)
incorporates the experience of human transformer designers and builders in terms of
minimum of fuzzy rules. It easily accomodates the linguistic design concepts and linguistic
values of transformer specifications. The FLTDA allows to use assumptions, approximations,
estimations and guess‐figures for specifications in the beginning of design‐route
and adjusts the parameters in iterations yielding optimum design results.

As a first attempt towards the development of FLTDA only preliminary results have
been worked out in trial designs. Comparison between conventional design method and
fuzzy based method is made by working out the typical design problems.
A Method for the Statistical Evaluation of Crosstalk Effect Between Three Parallel Conductors
Authors: Trakadas P. T. , Capsalis C. N.
Published: April 2008

There are several cases at which, in order to evaluate the crosstalk effect among
transmission lines carrying useful signals, there is a need for probabilistic approach. This
paper considers the problem of crosstalk estimation between transmission lines
consisting of three conductors in a homogeneous surrounding medium, where the
distance between the conductors is a random variable described by uniform distribution.
The transmission lines are considered as electrically short. A closed‐form equation is
developed for the statistical distribution of the per‐unit‐length mutual inductance (lm)
and an analytical one is described for the evaluation of the per‐unit‐length capacitance
(cm). Theoretical results are compared with simulated ones for validation purposes.
On the Sensitivity of the Tunneling Current to Electric Field in a MOSFET with Two Gates
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: April 2008

A theoretical model to evaluate the sensitivity of the tunneling current to the electric field
in an n‐channel MOSFET with two gates is proposed. This sensitivity is calculated in a
real situation.
A New Method for the Extractionof Diode Parameters Usinga Single Exponential Model
Authors: Dib S. , De La Bardonnie M. , Khoury A. , Pelanchon F. , Mialhe P.
Published: April 2008

A new method for extracting junction parameters of the single diode model is presented.
A least squares method approach considers the deviation ∆V=f(I) between the
experimental current‐voltage (I‐V) characteristic and a theoretical arbitrary characteristic.
A specific case‐ the ∆V graph reducing to a straight line–is identified and the
knowledge of the slope and of the intercept with the ordinate axis leads to the determination
of the junction parameters. The method is applied to the characterization of
the emitter‐base junction of transistors and the results are discussed.
A New Statistical Methodfor Maximum Power Estimationin CMOS VLSI Circuits
Authors: Evmorfopoulos N. E. , Avaritsiotis J. N.
Published: April 2008

A method for maximum power estimation in CMOS VLSI circuits is proposed. The
method is based on extreme value theory and allows for the calculation of the upper end
point of the probability distribution which is followed by the instantaneous power drawn
from the supply bus. The main features of the method are the relatively small and circuitin‐dependent
subset of input patterns required for accurate prediction of maximum
power and its simulative nature which ensures that no over‐simplifying assumptions are
made. Application of the proposed method to eight distributions, which come close to
the behavior of power consumption in VLSI circuits, proved its superior capabilities
with respect to existing methods.
The Li and Co‐Substituted Spinel Mn Oxide, (Li) 8a[Lix/4Co3x/4Mn2−x] 16dO4, and Its Use as Cathode Material in Flat and Flexible LithiumBattery
Authors: Hong Y. S. , Han C. H. , Kim K. , Kwon C. W. , Campet G.
Published: April 2008

The partial substitution of manganese by lithium and cobalt ions in 16d octahedral sites
enhances the electrochemical cyclability of LiMn2O4 upon cycling. The improvement
in cycling performance is mainly attributed to the suppression of the Jahn–Teller
distortion in the spinel structure. The as‐doped spinel Mn oxide has been successfully
used as cathode material in flat and flexible lithium battery.
Relaxable Damage in Hot‐Carrier Stressing of n‐MOS Transistors
Authors: Rahmoun M. , Bendada E. , El Hassani A. , Raïs K.
Published: April 2008

A method for device characterization is experimented to qualify the relaxable damage in
hot‐carrier stressing of n‐MOS transistors. The degradation of physical parameters of
the body‐drain junction of power HEXFETs is presented for applied stress condition
Vg= Vd/2. Large decrease of the resistance series, of the ideality factor, and of the reverse
recombination current are shown to be related to relaxation time, and are significant
at Vg=–Vd. These effects are discussed and explained by the evolution of the
interface states.
Peltier Effect Appliedto the Design and Realizationof a New Mass Flow Sensor
Authors: Rahmoun M. , El Hassani A. , Leclerq D. , Bendada E.
Published: April 2008

The present paper deals with design and realization of a new mass flow sensor using the
Peltier effect. The sensor, shaped as a bimetallic circuit includes two continuous parallel
strips coated with a great deal of metal plated spots. In such a device, one track performs
as a classical thermoelectrical circuitry whose both plated and uncoated parts provide
the thermopile junctions. The other strip is subjected to electrical current so as to generate
numerous small thermal gradients owing to the Peltier effect. Then, the resulting
differences in temperature induce a Seebeck e.m.f. detected by the other strip acting
as a receiver. The thermal coupling between transmitter and receiver tracks depends on
many variation of the surrounding environment heat transfer coefficient. Therefore,
such a device allows us to detect any shift in physical properties related to the apparent
thermal conductivity. In special case of a steady state fluid, the induced e.m.f. in the
receiving track hinges on the thermal conductivity. When the fluid is in relative motion
along the sensor, the velocity can be read out as a funotion of voltage as an application,
the sensor is placed into a tube conducting a fluid flow, in order to design a new mass
flowmeter.
Computer‐Aided Numerical Inversion of Laplace Transform
Authors: Kumar Umesh
Published: April 2008

This paper explores the technique for the computer aided numerical inversion of Laplace
transform. The inversion technique is based on the properties of a family of three
parameter exponential probability density functions. The only limitation in the
technique is the word length of the computer being used. The Laplace transform has
been used extensively in the frequency domain solution of linear, lumped time invariant
networks but its application to the time domain has been limited, mainly because of the
difficulty in finding the necessary poles and residues. The numerical inversion technique
mentioned above does away with the poles and residues but uses precomputed numbers
to find the time response. This technique is applicable to the solution of partially
differentiable equations and certain classes of linear systems with time varying
components.
Translocations Involving the Immunoglobulin Heavy Chain Gene Locus Predict Better Survival in Gastric Diffuse Large B-Cell Lymphoma
Authors: Nakamura Shotaro , Ye Hongtao , Bacon Chris M. , Goatly Alison , Liu Hongxiang , Kerr Lucy , Banham Alison H. , Streubel Berthold , Yao Takashi , Tsuneyoshi Masazumi , Savio Antonella , Takeshita Morishige , Dartigues Peggy , Ruskoné-Fourmestraux Agnès , Matsumoto Takayuki , Iida Mitsuo , Du Ming-Qing
Published: April 2008

Purpose: The pathogenesis and clinical heterogeneity of gastric diffuse large B-cell lymphoma (DLBCL) are poorly understood. We have comprehensively investigated the incidence and clinical significance of lymphoma-associated chromosomal translocations, particularly those involving the immunoglobulin heavy chain (IGH) gene locus, in a large series of gastric DLBCL.

Experimental Design: One hundred forty-one cases of primary gastric DLBCL [58 with mucosa-associated lymphoid tissue (MALT) lymphoma and 83 without MALT lymphoma] were enrolled. Translocations involving BCL6, c-MYC, FOXP1, MALT1, and IGH were investigated using interphase fluorescence in situ hybridization. In positive cases, additional fluorescence in situ hybridization was done with appropriate probes for potential partner genes. Cases were classified into germinal center B-cell–like (GCB) or non-GCB subgroups by immunophenotyping with CD10, BCL6, and MUM1.

Results: Translocations involving IGH were detected in 36 (32%) of 111 cases; their partner genes included BCL6 (n = 10), c-MYC (n = 5), and FOXP1 (n = 3) but remained unknown in the remaining 18 cases. t(14;18)/IGH-BCL2, t(14;18)/IGH-MALT1, and t(1;14)/BCL10-IGH were not detected in any case. t(11;18)/API2-MALT1 was detected in none of the cases, except for one case of DLBCL with MALT lymphoma, which showed positive signals only in MALT lymphoma cells. IGH-involved translocation was associated with younger age but not with any other clinicopathologic factors including GCB or non-GCB immunophenotypes. Cox multivariate analysis revealed that IGH-involved translocation, in addition to younger age and early stage, was an independent prognostic factor for better overall and EFSs.

Conclusion: IGH-involved translocations are frequent in gastric DLBCL and seem to identify cases with favorable prognosis.
Chemopreventive effects of oral gallic acid feeding on tumor growth and progression in TRAMP mice
Authors: Raina Komal , Rajamanickam Subapriya , Deep Gagan , Singh Meenakshi , Agarwal Rajesh , Agarwal Chapla
Published: April 2008

Our recent studies have identified gallic acid as one of the major constituents of grape seed extract showing strong in vitro anticancer efficacy against human prostate cancer cells. Herein, for the first time, we established the in vivo chemopreventive efficacy of gallic acid against prostate cancer by evaluating its activity against prostate tumor growth and progression in transgenic adenocarcinoma of the mouse prostate (TRAMP) model. At 4 weeks of age, male TRAMP mice were fed with drinking water supplemented with 0.3% and 1% (w/v) gallic acid until 24 weeks of age. Positive control group was fed with regular drinking water for the same period. Our results showed that gallic acid–fed groups had a higher incidence of differentiated lower-grade prostatic tumors at the expense of strong decrease (∼60%; P < 0.01) in poorly differentiated tumors. Immunohistochemical analysis of prostate tissue showed a decrease in proliferative index by 36% to 41% (P < 0.05) in 0.3% to 1% gallic acid–fed groups, with an increase in the apoptotic cells by 3-fold (P < 0.05). Further, both doses of gallic acid completely diminished the expression of Cdc2 in the prostatic tissue together with strong decrease in the expression of Cdk2, Cdk4, and Cdk6. The protein levels of cyclin B1 and E were also decreased by gallic acid feeding. Together, for the first time, we identified that oral gallic acid feeding inhibits prostate cancer growth and progression to advanced-stage adenocarcinoma in TRAMP mice via a strong suppression of cell cycle progression and cell proliferation and an increase in apoptosis. [Mol Cancer Ther 2008;7(5):1258–67]
Cholangiocarcinoma Complicating Primary Sclerosing Cholangitis: A 24-Year Experience
Authors: Morris-Stiff G. , Bhati C. , Olliff S. , Hübscher S. , Gunson B. , Mayer D. , Mirza D. , Buckels J. , Bramhall S.R.
Published: April 2008

Aim: To report the prevalence and outcome of cholangiocarcinoma arising in primary sclerosing cholangitis for a British tertiary referral centre. Methods: All patients diagnosed with primary sclerosing cholangitis and concurrent cholangiocarcinoma were identified from a prospectively maintained departmental database, and the mode of presentation, management and outcome were determined. Results: Of 370 patients with primary sclerosing cholangitis, 48 patients (13%) were diagnosed with a cholangiocarcinoma within a median time of 0.51 months (range: 0–73.12) from presentation to the unit. Mode of presentation included: inoperable tumours (n = 14); incidental findings in transplant hepatectomy specimens (n = 13); primary sclerosing cholangitis follow-up (n = 9); transplant work-up (n = 5); transplant waiting list (n = 5); suspected tumour confirmed at transplant (n = 1), and incidental finding at cholecystectomy (n = 1). The diagnosis was confirmed by: radiology-guided biopsy (n = 27); MRI (n = 3); CT (n = 2); laparoscopy or laparotomy (n = 2), and frozen section at transplant (n = 1). Management consisted of: transplantation (n = 14, including 1 abandoned); hepatic resection (n = 8), and palliation through stenting (n = 26). The overall median survival of the cohort was 4.9 months (range: 0.09–104.5). Median survival ranged from 2.6 months (range: 0.09–35.3) for palliation to 7.6 months (range: 0.6–99.6) for transplantation and 52.8 months (range: 3.7–104.5) for resection. There was no difference in survival between the transplant and resection groups (p = 0.14). Conclusions: Cholangiocarcinoma is a common finding in primary sclerosing cholangitis and regular screening of this cohort of patients at referring centres is advocated to detect early tumours, as surgical treatment at an early stage offers significantly better outcomes for this cohort of patients.