bluuebunny/crossref_metadata_2025 huggingface dataset:
Design of an Indegenised Negative Resistance Characteristics Curve Tracer
Authors: Kumar Umesh
Published: June 2007

“Negative Resistance” exhibited by a device during some portion of its V‐I characteristics produces jump phenomenon, hysteresis and oscillation in the tracing
circuitry. A method is presented to overcome the above problems in tracing the
negative resistance characteristics of 2‐terminal and 3‐terminal devices by an indeginised
curve plotter.
Modeling of Interface Defect Distribution for an n‐MOSFETs Under Hot‐Carrier Stressing
Authors: Marrakh R. , Bouhdada A.
Published: June 2007

We propose to model the evolution of the interface defect density, induced by the hot‐carrier‐injection, during stress time for n‐MOSFET transistor. This interface defect density is modeled by a spatial and temporal gaussian distribution centered close to the
extremity of the channel near the drain. The gaussian Parameters (standard deviation
and maximum) vary according to the stress. The stress generated defects leads to the
degradation of the threshold voltage. The analysis of the threshold voltage evolution
with stress time allows us to handle informations on the device performances degradation.
The mathematic expression is simple so that the present model is suitable for
circuit simulator.
Multi‐Function Active‐Only High‐Order Current‐Driven Filter
Authors: Abuelma′atti Muhammad Taher , Alzaher Husain Abdullah
Published: June 2007

A new multi‐function high‐order current‐driven filter is proposed. The filter uses only
operational amplifiers, and operational transconductance amplifiers (OTAs). Without
using any external passive elements, a variety of high‐order input‐current/output‐current
and/or input‐current/output‐voltage responses can be realised without changing the
circuit topology and without any matching or cancellation conditions. The parameters of
the high‐order filter responses can be electronically tuned by adjusting the bias currents
of the OTAs.
A Study on Effect of Line Width, Composition and Firing Temperature on the Microstripline Properties
Authors: Rane Sunit , Puri Vijaya
Published: June 2007

The transmittance and reflectance of microstriplines of different widths, fabricated
by thick film and thin film technology are studied in the X and Ku band (8–18 GHz).
The fritless thick film Ag pastes with different binder composition was formulated indigenously
and screen‐printed the microstriplines on alumina substrate. These microstriplines
were compared with the microstriplines made from ESL (USA) pastes and also
Cu thin film circuits. The effect of line width, composition and firing temperature on the
thick film microstriplines was investigated. The transmittance of all the indigenously
prepared Ag thick film paste compared well with microstriplines prepared with ESL
pastes. All these thick film pastes gave good transmittance upto 18.0 GHz. The results
indicate firing at 700℃ gives best films, and also 18 mil or 20‐mil line width is more
suitable than conventional 25‐mil line width if thick films are used for metallization upto
18.0 GHz.
VDMOSFET Model Parameter Extraction Based on Electrical and Optical Measurements
Authors: Salame C. -T. , Rizk C. , Jelian G.
Published: June 2007

Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide
semiconductor field effect transistor) with hexagonal cells has been extracted by an
original model based on electrical and optical measurements. Using microscopic
observation for the ship of the device and by C‐V characterization, the lateral device
structure parameters could be extracted. Values of the extracted parameters are in good
correlation with the values given by the manufactured. Advantage of this model the high
precision results with a low cost. Perhaps, the most important point in this model, that
we can replace the other techniques usually employed in this study where we destroyed
the device for cut and cross section of the structure. The proposed technique in this paper
can be very useful for analyzing any complex geometrical structure of VDMOS
transistors (hexagonal, triangular, square etc…).
A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
Authors: Lee Ming Rong , Yarn K. F. , Chang W. R.
Published: June 2007

A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential
barrier lowering resulted from the forward biased pn junction is demonstrated in a
AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics
with a high voltage control efficiency η(= VS/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF‐and ON‐state resistances are 120 kΩ, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as‐cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm.
Biaxial Strain Effects on Optical Characteristics of Quantum Well Lasers
Authors: Hsu J. S. , Lee Ming Rong , Yarn K. F.
Published: June 2007

The effects of biaxial strain produced by the lattice mismatch of constituent materials on
the optical properties of strained In1−xGaxAsyP1−y/In1−xGaxAs quantum well lasers
are investigated.

The optical gain and refractive index change of a biaxially stressed quantum well lasers
are studied theoretically using the multiband effective mass equation (i.e., method),
deformation potential theory and Fermi‐Golden rule, band mixing effect is retained in
the calculations. It is found that the biaxial strain would change the subband structures
and optical properties of quantum well lasers, we found the gain of TE mode increases
with increasing compressive strain, while the gain of TM mode increases with increasing
tensile strain, these will be benefited for reducing the threshold current depending on
whether the quantum well lasers are operating in TE or TM mode. On the other hand,
the refractive index change in the active region near the TE(TM) mode peak gain
becomes more negative when a biaxial compressive(tensile) strain is applied, it leads
to the conclusion that the strain weakens the optical confinement, the temperature
dependence of gain also becomes stronger when there is strain.

Finally, we also found the minimum peak gain occurs when a small tensile strain is
applied, but no strain.
A Brief Discussion on Energy Considerations for GaAs Parabolic Quantum Dots
Authors: Grado-Caffaro M. A. , Grado-Caffaro M.
Published: June 2007

The hamiltonian operator corresponding to a GaAs parabolic quantum dot is formulated
by analyzing carefully the terms of this operator. In this formulation, certain
plasma aspects are discussed with respect to the hamiltonian. Our study is referred to the
absence of electric and magnetic fields.
Design of an Indigenised Electronic Lock‐In Amplifier
Authors: Kumar Umesh
Published: June 2007

An indigenised lock‐in amplifier is designed that enables the accurate measurement of
signals contaminated by broad‐band noise, power‐line pick‐up, frequency drift, or other
sources of interference. It does this by means of an extremely narrow band detector
which has the centre of its passband locked to the frequency of the signal to be measured.
Large improvements in signal‐to‐noise ratio are achieved.
Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET′s with Localized Defects
Authors: Bouhdada A. , Marrakh R.
Published: June 2007

We propose a model of the surface potential and the threshold voltage for submicron
lightly‐doped drain LDD nMOSFET’s in relation with the localized defects at the
interface Si–SiO2 in the overlap n‾ LDD region. Calculating the surface potential in the
intrinsic and the LDD regions by solving the 2‐D Poisson′s equation, the minimum
surface potential and the threshold voltage model are derived. Simulation results show
that the extension of the degraded zone induce a decrease of the surface potential and a
modification on its profile, this leads to an increase of the threshold voltage. The
threshold voltage variation can be used to characterize the ageing effect. The DIBL
(Drain induced barrier lowering) and the substrate bias effects are also included in this
model.
The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabricationof Microwave Filters
Authors: Kollias A. T. , Tsamis E. D. , Avaritsiotis J. N.
Published: June 2007

The piezoelectric properties of reactively sputtered ZnO thin films deposited on glass and
silicon substrates were studied in order to assess their potential for the construction of
RF overmoded filters. Films of high crystallographic orientation {002}, as shown by
XRD measurements and SEM observations, and high value of
, calculated with the aid of the BVD model, were obtained after the optimization of the deposition conditions, with highly repetitive properties. Simple devices were designed and constructed on
silicon substrates which showed a quality factor of 1000 without the use of a Bragg
acoustic reflector, and a temperature drift of –30ppm/℃.
Chaos Generation Using BJT′s and PLL′s
Authors: Kumar Umesh
Published: June 2007

There are several simple equations which can be used to generate chaotic waveforms. We present two such equations, called the Duffing equation and the Ueda equation. The
duffing equation displays a chaotic trajectory for particular values of the parameters. A
two‐BJT circuit and a PLL circuit are used as shown.
Electrochemistry of Inorganic Nanocrystalline Electrode Materials for Lithium Batteries
Authors: Kwon C. W. , Hwang S. J. , Delville M. H. , Labrugère C. , Murugan A. Vadivel , Kale B. B. , Vijayamohanan K. , Campet G.
Published: June 2007

Traditional electrode materials are based on the redox potential difference of the electrode in the course of intercalation/deintercalation reactions. They are generally well‐crystalline host compounds either with layered structure such as LiCoO2 and LiNiO2, or with tunnel structure like LiMn2O4 Nanocrystalline materials are, however, being re‐evaluated recently as ‘nanoscience’ advances. The electrochemistry of this kind of materials is
much different from that of traditional crystalline ones because of their significant ‘surface effects’. In connection with that, the nanocrystalline cathode materials are reported to have an enhanced electrochemical activity when the first significative electrochemical step is insertion of Li ions (discharge process). The “electrochemical grafting” concept will be given as a plausible explanation. As illustrative examples, electrochemical behaviors of nanocrystalline manganese oxydes are presented.
Flat Type Thick Film Inductive Sensors
Authors: Marioli D. , Sardini E. , Taroni A.
Published: June 2007

Two thick film flat‐type inductive sensors are described and tested for distance and profile measurement. The first one is a single‐layer spiral while the second one is a multi‐layer structure consisting of ten spirals one over the other. The paper describes their geometric configurations together with their simulated magnetic fields and it reports the results
from the characterization test i.e. the series‐equivalent circuit parameters, the sensitivity and the cross‐sensitivity to temperature. An experimental analysis of the sensitivity suggests that optimized values are obtained by an appropriate choice of the working frequency. The sensors are shielded against e.m. noise coming from the nonsensitive
area. Moreover, two sensors have been tested in the laboratory using the single layer as a distance sensor and the multi‐layer as a transducer for the measurement of a metallic object profile. The results of the tests show a maximum sensitivity of 14mV/µm and a resolution of 0.6 µm for the single layer, while the multi layer one reconstructs the profile with an axial resolution of a few microns and a lateral resolution better than 200 mm.
An Inexpensive Thick Film Furnace
Authors: Begakis N.
Published: June 2007

The centre of any thick film teaching or research establishment is the furnace for firing the thick film pastes. These are usually large and expensive belt furnaces. This article discusses the design and manufacture of an inexpensive three zone belt furnace of moderate size, which any reasonably well equipped college, university or small manufacturer could assemble.
Effect of Heat Treatment of Anodic Oxide Films on Aluminium on Their Photoluminescent Properties
Authors: Tajima S. , Shimizu K. , Baba N. , Sakai H.
Published: June 2007

Heating of anodic oxide films on aluminium produced irreversible changes in their photoluminescent properties.
In the case of oxalic acid films, for instance, PL intensity increased exponentially with increasing heating temperature up
to 600℃. Above this temperature, PL intensity decreased rapidly with increasing heating temperature and
disappeared at 800℃. Similar tendencies were also found with other carboxylic and hydroxy‐carboxylic acid films.
On the other hand, inorganic acid films gave no photoluminescence even after heat treatment. It was found that our
hypothesis that the luminescent centres of anodic oxide films on aluminium might be incorporated carboxylate ions as
presented in a previous paper, proved to be appropriate to explain these observations.
A System for Depositing Tungsten Coatings Suitable for an Electrical Contact Application
Authors: Carpenter R.
Published: June 2007

A method was needed for depositing smooth coatings of tungsten at relatively high rates onto the electrodes of a reed switch. A literature survey indicated that the most suitable technique was based on the vapour phase hydrogen reduction of tungsten hexafluoride. A reactor was designed for this purpose on the basis of safety, optimum utilisation of tungsten hexafluoride, and possible adaption to higher throughput. Experience with this reactor indicated that precautions were necessary before good quality coatings could be deposited and suggested that films of an acceptable thickness variation could be produced by using a flow reversal technique.
Conduction Processes in Thick Film Resistors. Part II
Authors: Ansell M. P.
Published: June 2007

The structures of three families of thick film resistors have been investigated by scanning electron microscopy and electron probe micro‐analysis. The two principal components of the resistive glazes, that is the conducting pigment and the glassy binder, have been identified in each case. The pigments were found to be simple or ternary oxides of the Pt transition metal group and Pd/PdO/Ag alloys. The glassy binders were based on lead borosilicate glasses.

A model for the electronic conduction processes through the glass and pigments is proposed on the basis of the observed physical structures, the measured electrical properties of resistors and the properties of the component resistor materials.

Part I of the total paper is concerned with identifying the phases in various thick film resistors and part II considers the conduction processes that are applicable.
Failure Mechanism of Solid Tantalum Capacitors
Authors: Goudswaard B. , Driesens F. J. J.
Published: June 2007

It has been suggested that failure of solid tantalum capacitors is due to thermal migration of impurities from
the tantalum anode to flaws in the oxide layer. This implies, however, that leakage current gradually increases under
normal operating conditions, an effect which has not been observed. An alternative hypothesis advanced here is that
failure is due to crystallization of tantalum oxide under the influence of the electric field. Scanning electron microscopy
of specially cleaned anodized tantalum sheet on which thin gold electrodes have been deposited clearly shows the
occurrence of crystallization after 17 hours at an applied voltage of 75 V and a temperature of 65℃. Results
of accelerated life tests on solid tantalum capacitors at temperatures of 85℃ and 125℃, and at up to 2,5
times rated voltage also accord better with a field crystallization hypothesis than with a thermal migration failure hypothesis.
Applications of Langmuir Films in Integrated Optics
Authors: Pitt C. W. , Walpita L. M.
Published: June 2007

This paper describes the preparation and properties of Langmuir (long‐chain fatty‐acid) films, for use as optical waveguides. It is shown how the refractive index and molecular thickness can be estimated by probing the films with a guided wave, and how such layers may be utilised to modify the propagation characteristics of pre‐fabricated guiding structures. Cases of isotropic and anisotropic guides formed from such films are discussed, together with further uses of such films as cladding to guides and other materials.
Adhesion Measurement of Thin Films
Authors: Mittal K. L.
Published: June 2007

A critical and comprehensive review of the various methods for the measurement of adhesion of thin films is presented. Emphasis has been placed on the techniques used for thin films (<1μm) but consideration has also been extended to methods which have proved successful in case of relatively thicker coatings and are potentially applicable in the study of thin films. Most of the methods catalogued in this review have been harnessed in measuring the adhesion of thin evaporated or sputtered metallic films on an assortment of substrates; the literature references to the study of thin polymeric films are extremely meager.

The methods of determination of adhesion are discussed under three headings: Nucleation Methods, Mechanical Methods and Miscellaneous Techniques. Furthermore, the mechanical methods are categorized depending upon the mode of application of the force to disrupt the interface. Although the emphasis is on the quantitative methods of measuring adhesion, but for completeness qualitative as well as the methods which are still in a state of infancy have been included.

Requirements for the ideal adhesion test are outlined and, apparently, there does not exist any test which fulfils all the virtues. Many of the techniques may not provide absolute quantitative values of adhesion strength but these can profitably be used to follow relative changes in adhesion strength due to process variables, ageing weathering, etc.

The principle, merits, potentialities, and limitations of each technique are outlined, and the difficulties associated with measuring adhesion strengths and their relationship to “basic adhesion” are discussed.
Wide Band Monolithic Crystal Filters Using Lithium Tantalate
Authors: Hales M. C. , Burgess J. W.
Published: June 2007

The construction and performance of wide bandwidth monolithic crystal filters is demonstrated using single crystal lithium tantalate. Important steps in the fabrication of the filter and the necessary design criteria are discussed. The Bechmann conditions for single mode energy trapping and the inter‐resonator coupling relationships are given. Using the data reported, filters operating at third harmonic frequencies (approximately 50 MHz) have been constructed with bandwidths up to 0.75%.
An Experimental Investigation of the Dielectric Properties of Thermally Evaporated Rare Earth Oxides for Use in Thin Film Capacitors
Authors: Fromhold, A. T. , Foster W. D.
Published: June 2007

An experimental survey of rare earth oxides for use in thin film capacitors has been completed.
Dielectric properties measured at 300°K are reported for thermally evaporated oxides 300 to 6000 Å in
thickness of the metals, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Yb, Y, Sc, and also, V. Thin evaporated aluminum
electrodes were utilized to impress voltages in the range zero to 75 V across the oxide layers. Dielectric breakdown
strengths in excess of 5 × 106 V/cm were observed. Relative dielectric constants measured for
the oxides range from two to twenty, and measured capacitances were as high as
156 × 10−9 F/cm2. The oxides of Ce, La, Nd, Gd, Pr, and Er show the
most promise as potential materials for use in thin film capacitors.
Electrical Conduction by Percolation in Thick Film Resistors
Authors: Forlani F. , Prudenziati M.
Published: June 2007

Thick film resistors are widely used in microelectronic devices, however the mechanism of electrical conduction in these resistors has not yet been fully understood. In particular the anomalous behaviour of the temperature coefficient of resistance (T.C.R.) vs. temperature for a purely ohmic resistor has not been explained. The anomaly is that the T.C.R. is negative at low temperatures, is zero around room temperature and becomes positive at higher temperatures.

This paper demonstrates that the electrical conduction mechanism in thick film resistors can be described by the electron percolation theory already proposed to explain charge transport in amorphous semiconductors.
The thick film structure consists of conductive grains with a diameter of 0.1 μm
to 0.3 μm separated by dielectric layers. Some of the conductive grains make contact through
dielectric layers so thin that electrons are able to tunnel through the layers. The critical percolation path is through
these grains. Experimental evidence is given which confirms that the resistance vs. temperature characteristics
satisfactorily fit the conduction equation provided by the percolation theory.

The T.C.R. anomaly can be explained in the framework of this theory. The decay length of the electron wave‐function
is shown to be lower than 370 Å for a density of conductive grains in the film in the order
of 1015 cm−3. Such a value is consistent with electron tunnelling through layers
about 100 Å thick.
Field and Circuit Models for the Wound Foil Inductor
Authors: Murgatroyd P. N.
Published: June 2007

The Wound Foil Inductor is an important example of inductive components with appreciable internal capacitance.
It is examined from three viewpoints – electromagnetic field theory, distributed‐parameter (or transmission‐line),
and lumped equivalent circuit. The analyses are compared, particularly in terms of phase gradients within a component,
and the relationship between a two‐dimensional field analysis and the now established lumped model is derived.
Improved Hybrid Circuit Assembly Yields and Reliability byGlassivation of the Semiconductor Chip
Authors: Heap B. C. , France S. A.
Published: June 2007

Lead glass passivation (glassivation) of semiconductor chips has been investigated. Glassivation of BC107 type
transistor chips has resulted in improved robustness and their ability to withstand ionic contamination better than
control chips. Increased yields were observed when glassivated transistor chips were assembled in ceramic flat
packages.
Characterization of Thick Film Capicitors
Authors: Leroy Y. , Descamps M. , Vernet M.
Published: June 2007

Teaching activities of the “Institut Universitaire de Technologie de Lille” (France) were previously reported.

The present paper reports measurement results obtained by students during their last training period for about a
hundred capacitors made with commercial dielectrics (EMCA CDP 400, EMCA CDP 2000, and ESL K 1000).

We examine the following points: reproducibility of capacitors during fabrication, correlation between electrical
parameters of components and firing conditions, measurements of capacitance and loss factor between 10 kHz and
20 MHz for temperatures ranging from 20°C to 100°C.
Thin Film Integrated RC‐Networks With Compensated TemperatureCoefficients of R and C
Authors: Pötzlberger H. W.
Published: June 2007

Thin film integrated RC‐networks can be prepared from two non reactively sputtered TaAl films, the properties
and optimum compositions of which have been found. Temperature compensation of the integrated resistors and
capacitors is achieved by adjusting the temperature coefficient of capacitance. A duplex dielectric capacitor structure
is used with anodically formed TaAl‐oxide and a sputtered SiO2 layer. Temperature coefficient of capacitance,
dielectric loss and capacitance density have been measured vs. SiO2 thickness. Because of almost linear dependences
on temperature of both the TaAl resistors and the TaAl‐oxide/SiO2‐capacitors, such RC‐networks show temperature
compensation over a wide temperature range, the TCC being +110 ppm/K and the TCR −110 ppm/K.
A New Concept in Calculation of Thick Film Resistors
Authors: Stecher G.
Published: June 2007

Because of interaction of resistor and conductor material and variation of film thickness due to different resistor
geometries, square resistance becomes a function of resistor length and width. Additional to the square resistance
one paste parameter or two parameters must be introduced if the influence of both length and width on the square
resistance is to be taken into account. From resistance measurements of a test pattern all paste parameters can be
calculated as numerical functions of resistor length by a computer programme using the method of least squares.
Beside the layout of thick film resistors, the data are suitable to give a computer plot of square resistance in relation
to length and width. This representation can play an important part in paste evaluation and process control. It shows
at a glance what relationship will be present with various combinations of conductor and resistor materials or by
changed process conditions.
Criteria of Low‐Noise Thick‐Film Resistors
Authors: Vandamme L. K. J.
Published: June 2007

Our simple model of the noise of a thick‐film resistor leads to two limiting cases. For thick‐film resistors with a
conduction dominated by the glass interface, the relative noise is proportional to the sheet resistance, R□. For thick
film resistors, where the conduction is mainly dominated by the current constrictions in the contact areas between
grains, the relative noise is proportional to . Both trends have been observed. Some criteria of low‐noise thick‐film
resistors are derived from the developed noise relations.

The major conclusion is that measurements of the noise index are a nondestructive way to check quantitatively
the operations used to manufacture high‐quality thick‐film resistors. Inadequate materials or treatments, weak or
brittle wire bonds and reliability are easily detected by 1/f noise measurements.
Influence of the Metal Migration From Screen‐and‐Fired Terminationson the Electrical Characteristics of Thick‐Film Resistors
Authors: Cattaneo A. , Cocito M. , Forlani F. , Prudenziati M.
Published: June 2007

The electrical characteristics of ruthenium‐based thick‐film resistors with different conductive terminations (PtAu
and Ag based compositions) and with different aspect ratios were examined. The purpose is to understand the effects
of resistivity decrease and TCR variation caused by the migration of metal particles from the terminations into the
resistor film.

The majority of the data were collected by using silver‐based terminations since Ag diffusion processes, and then
the relevant electrical effects, are emphasized.

Scanning electron microscopy, electron microprobe analysis and X‐ray diffraction analysis have been used to
analyze the diffusion processes and the thick‐film microstructures. It is shown that the experimental data is simply
explained by a conduction model which assumes percolative tunneling of electrons through conductive grains
embedded in the glass matrix of the resistors. Using simple hypotheses the model theory gives a good quantitative
fit of the experimental results.
Economics of Thick and Thin Film Hybrid Production in Europe
Authors: Boswell D. , Campbell D. S.
Published: June 2007

This paper is a report of a discussion panel held at the First European Conference on Hybrid Microelectronics,
concerning the Economics of Hybrid Production. Figures were presented at the discussion showing the sizes of the
markets in the U.S.A. and in Europe, demonstrating the percentage of total hybrid markets associated with thin film
technology and also the percentage of the market associated with hermetically packaged circuits. It was shown that
the growth rate in hybrid technology is similar to that predicted for integrated circuits, a result which can be
explained in terms of the interconnection facility which hybrid technology offers.
Techniques for the Examination of Thick Film Resistor Microstructures by T.E.M.
Authors: Pedder D. J.
Published: June 2007

This paper discusses the preparation techniques which can be used for the examination of thick film resistor microstructures
by Transmission Electron Microscopy. The application of this technique, including High Voltage Electron
Microscopy and Electron Microscope Mass Analysis, to both Ruthenium Dioxide and Bismuth Ruthenate based
thick film resistors, is considered.
A Thick Film Base Metal Resistor and Compatible Hybrid System
Authors: Buzan F. E. , Grier J. D. , Bertsch B. E. , Thoryk H.
Published: June 2007

Non‐noble metal thick film materials have been the topic of several recent papers. 11 ,13 ,14,15 This paper will focus on the
first non‐noble metal thick film system comprising conductors, dielectrics and most important, resistors for commercial
use. Processing and performance data are presented in detail to illustrate the capabilities of these new materials.
Circuit applications information is presented wherever possible. This new class of materials will enable the microelectronics
industry to exploit new market opportunities previously unavailable due to the high costs of precious
metal materials.
Time Dependence of Ion‐Migration Effects in NiCr Resistor Films
Authors: Smith U. , Hoffmann R.
Published: June 2007

This paper reports the effects of ion‐migration on NiCr‐resistor films sputtered on the substrates Corning 0211 and
7059. Graphs showing the influence of magnitude and polarity of the bias potential, of the separation between
resistor and counter‐electrode, and of reversal of bias polarity are given for Corning 0211 substrates at a temperature
of 100℃ and in a relative humidity of 0.7% for periods of time ranging up to 1000 hours. Results for resistors
having a NiCr‐oxide layer between the film and the Corning 0211 substrate as well as for NiCr resistors on Corning
7059 substrate are also presented. Previous use of a bias‐electrode at positive potential is shown to lead to a
depletion‐recovery effect. The physical interpretation of the experimental features is given in terms of a model
involving anodic oxidation at the positive electrode and formation of a low conductivity deposit at the negative
electrode.
Design of Wide Band Amplifiers Using Hybrid Integrated Techniques
Authors: Sonkoly Aurel
Published: June 2007

This article deals with the design of wide band transistor amplifiers. The effects of parasitic elements are significant
in the high frequency circuits mounted traditionally and they can only be partially computed. That is why, at
present, good quality wide band transistor amplifiers can only be realized using hybrid techniques in an economical
production environment. Precise equivalent circuits of high frequency transistors cannot be given, so these devices
are characterized by the scattering parameters. Using a digital computer in order to analyse transistor amplifiers the
impedance, admittance, transmission and scattering parameters must be converted rationally. To compensate the
circuits at high frequencies inductive elements are needed. Using thin film hybrid techniques, the inductor can be
realized on a ceramic substrate as an open, i.e. asymmetrical, microstrip transmission line section.

Up to now, in our institute, two circuit families of wide band amplifiers based on the above thin film hybrid
principles have been produced. These circuits are designed for use as general purpose amplifiers but they are also
suitable for CATV and measuring systems.
An Evaluation of the Voltage‐Current Rating Characteristics of Miniature Monolithic RF Ceramic Capacitors
Authors: Albert M. J.
Published: June 2007

This paper reviews the establishment of RF voltage and current rating characteristics of monolithic ceramic
capacitors, using thermal balance considerations between heating of the component due to dielectric losses and heat
transport through conduction by the electrodes.

Maximum thermal voltages and currents, characteristic of the electric and thermal conductivities of the dielectric
material, were calculated on the basis of dielectric loss‐frequency characteristics determined experimentally for
test devices resembling in their design those of miniature RF power capacitors, and UHF/microwave porcelain chip
capacitors for applications in strip line circuits.

Maximum rated RF voltages for the specific components were evaluated by consideration of the elements of
dielectric strength and breakdown properties.

By the establishment of the maximum internal temperatures developed within the dielectric upon the application
of RF voltages which are permissible for reliable operation of the component, the RF voltage and current
rating characteristics may be designated in terms of characteristic limiting impedances determining regions of the
characteristics where limitations by the maximum rated voltage, power, or current obtain.

Relations between rating characteristics and component design are briefly reviewed.
New Crossovers Using a Combined Film Technique
Authors: Kiessling Günter
Published: June 2007

This paper was presented at the IEEE Committee for Passive Components and their Materials International
Conference on Thin and Thick Film Technology, held at Augsburg, 28–30 September 1977.
A New Analytical Expression for the T.C.R. of Thin Monocrystalline Metal Films
Authors: Tellier C. R.
Published: June 2007

The analysis of electrical conductivity of continuous thin monocrystalline metal film has been treated by assuming
that the scattering from other sources than grain‐boundaries can be described by an effective relaxation time. This
relaxation time method is applied to the temperature coefficient of resistivity and leads to an analytical approximate
equation in terms of the grain‐boundary reflection coefficient r and the reduced thickness k.

Comparison of the results with those deduced from the exact equation (derived from the Mayadas and Shatzkes
theory) shows that they deviate by less than 5% in large k–, p–, and r– ranges.
Chemical Reaction and Electrical Properties of Amorphous RuO2‐Ag‐Glass Ternary System
Authors: Ikegami Akira , Shinriki Kiichi
Published: June 2007

The relationship between composition, electrical properties, and the chemical reaction during firing of amorphous
RuO2‐Ag‐Glass ternary system are investigated. The results are as follows.

1) Iso‐resistivity, iso‐TCR and iso‐noise index curves of the system are determined. They have a common feature
with regard to their bending in the composition region containing less than about 10wt% Ag.

2) X‐ray diffraction and thermal differential analysis reveals the solution of Ag into glass phase in addition to
the crystallization of amorphous RuO2.

3) The triaxial diagram of isothermal section at 850℃ is given.

4) Electrical isograms in the system are discussed in relation to the solubility of Ag into glass phase.
Hybrid Realisation of High Precision Analog Conversion Modules
Authors: Kun L.
Published: June 2007

High precision analog modules are manufactured using film technologies. Components which are critical as regards
operation and stability are made by thin film technology, additional elements and interconnection of active
components are made using thick film technology.

Using these two separate manufacturing methods to obtain high stability and accuracy, optimum cost and yield
can be achieved. To illustrate these facts, two circuits are discussed in detail, a voltage to frequency converter and a
log amplifier.
Size Effects in Metallic Films
Authors: Warkusz F.
Published: June 2007

Based on the theories so far developed, an approximate expression for the resistivity of metallic films is derived,
which takes into account film thickness, grain diameter, as well as the coefficients of surface scattering and grain
boundary scattering. The derived formulae are compared with the results achieved by other authors.
Principe d′un Analyseur de Spectre Optique Utilisant les CouchesMinces Pulverisees
Authors: Murray H.
Published: June 2007

Cette étude décrit le principe d′un analyseur de spectre optique entre 2000 Å et 7000 Å, utilisant les propriétés
spécifiques de l′effet photovoltaïque apparaissant dans les structures sandwich de faible épaisseur. La mesure des
longueurs d′onde est liée à la détermination du point de renversement de la tension photovoltaïque en circuit ouvert;
le courant de court‐circuit étant par ailleurs proportionnel au flux lumineux. La précision obtenue sur la mesure des
longueurs d′onde dépasse 0,5% si le flux lumineux est supérieur au seuil minimum de 10 μW/cm2.

Specific properties of photovoltaïc effects in thin sandwich films have been used to describe a spectral analyser for
optical radiations in the range 2000 Å to 7000 Å. In such structures, we have shown that the photovoltaïc current
has a polarity depending on the wavelength of incident radiation. Further studies relating to conduction and
photoconduction phenomena allow us to attribute the reversal effect to a photoexcitation of ionised traps (Poole
Frenkel effect) or a photoexcitation from valence to conduction band of the photoconductor (Interband
transitions). As these two photoeffects present dimensional dependence, the reversal wavelength λ0 is thickness
dependent. Multilayer dielectric sandwich films may be used as spectral analysers after specific calibration of the
bias voltage, with an accuracy of 0.5% when the intensity of light is greater than 10 μW/cm2.

We have obtained some applications of such detectors in the U.V. region, when the dielectric is made from
sputtered zinc sulphide and in the visible region with cadmium sulphide. The specific properties of sputtering
processes are particularly adapted to the introduction of such analysers in microelectronics devices.
A Thick Film Capacitive Temperature Sensor Using Barium StrontiumTitanate Glass Formulations
Authors: Leppävuori S. , Hannula T. , Uusimäki A.
Published: June 2007

This paper describes a novel use of thick film techniques to produce a temperature sensor. Ferroelectric materials
above their Curie temperature exhibit a dielectric constant which is inversely dependent upon temperature. The
measuring range of the sensor can be altered by varying the ratio of the ferroelectric components used (BaTiO3 and
SrTiO3). By using this ceramic together with a glass frit to form a paste, it is possible to employ standard thick film
techniques to produce the sensors. Sensors with a composition (Ba0.5 Sr0.5)TiO3 were subjected to various temperature
and ambient conditions to investigate their temperature performance and stability. The sensors were fundamentally
stable and exhibited a capacitance change as large as 65% of their initial value over a temperature range
of 100℃ and yet the dependence was linear to within 1.5℃.
Electrical Transport in Thick Film Resistors
Authors: Hill Robert M.
Published: June 2007

It is only in the last ten years or so that solid state physics has had the temerity to consider that real solids are
neither perfect nor pure, whereas for many years all resistors of reasonable quality have been impure, highly doped,
and clearly disordered in structure. As solid state theory has developed there have been attempts to understand the
resistor problem but until now, with hindsight, we can say that the tools required have not been available. The
situation is, even now, not perfectly clear but there is sufficient information available to make a critical assessment
of the methods that can be applied and to indicate where the solution to the problem of carrier transport in resistor
materials might lie.
Gold‐Aluminium Intermetallic Compound Formation
Authors: Galli E. , Majni G. , Nobili C. , Ottaviani G.
Published: June 2007

During investigations of failure mechanisms and failure avoidance we have studied the kinetics and the mechanisms
responsible for the growth of the Au‐Al compounds. Au4Al, Au5Al2, Au2Al, AuAl, AuAl2
have been observed and the growth kinetics of the Au2Al, AuAl, AuAl2 follow a (time)1/2 dependence. The activation energy for the
growth of Au2Al is 1 eV and 1.2 eV was found for AuAl and AuAl2. The kind of compound formed depends on
the samples preparation and the results indicate that the kinetics of the mixing is the main mechanism responsible
for the sequence of formation of the various compounds.
An Installed Tape Automated Bonding Unit
Authors: Kurzweil Karel
Published: June 2007

The Tape Automated Bonding (TAB) was developed and industrialized to achieve a higher packaging density in
computer applications. After elaboration and testing of the prototype units, significant work was done to transfer
all the activity into production.

After a brief review of the principle of TAB technology the main characteristics of the manufacturing site are
presented and the most significant equipments developed for production needs are briefly described. It becomes
apparent that TAB and micropackaging technology are not limited to computers but can be considered in many
other microelectronic applications.
A Technique for the Measurement of Hot Spots and Isotherm Profilesat the Surfaces of the Elements of Hybrid Microcircuits
Authors: Sinnadurai F. N.
Published: June 2007

A simple technique for measuring surface temperatures with high sensitivity and spatial resolution, which is
particularly useful for examining temperature distributions of microcircuits, is described. The invention exploits
the well‐defined “Isotropic‐point” transitions of nematic liquid crystals from optical birefringence to anisotropy,
using a polarising microscope to detect temperatures in microscopic areas. Thus hot spots appear black against a
bright background. The temperature sensitivity is better than 0.5℃ and the spatial resolution better than 5 microns.
The technique has distinct advantages over alternative methods of measuring microcircuit temperatures. Examples
of applications in support of design evaluation and fault diagnosis of monolithic circuits illustrate the benefits of
visual information obtained. The ready application of the technique to the large planar areas of thick film resistors
has enabled the location of hot spots – confirming their occurrence at the end of laser cuts – and the measurement
of thermal resistances of resistors either singly or in arrays – showing that substantial heat conduction through the
substrate can outweigh local non‐uniformities in dissipation. Applications extend beyond the supportive role to
reliability evaluation illustrated in this paper.
An Alternative Way of Making Bumps for Tape Automated Bonding
Authors: Kopejtko Karel , Vilím Jindřich
Published: June 2007

Complete testing and high speed automated assembling are the main advantages which are offered by the technology
called Tape Automated Bonding (TAB). The main step in this technology is a bumping of wafers which is usually
performed by the IC manufacturers. When the bumped wafers are not available, the hybrid circuit manufacturers
are forced to bump wafers themselves. As the bumping process consists of several operations requiring many
preliminary steps, a new bumping process which is based on ultrasonic bonding of the preformed gold bumps to the
aluminium pads of chips has been suggested. Compatibility of such bumped chips with TAB and the shear strength
of those bumps were tested.
New Thick Film Sensors
Authors: Leppävuori S.
Published: June 2007

Various thick film sensors which are under development in the Microelectronics laboratory of the University of
Oulu are described. More details are included on the capacitive thick film temperature sensor which is in the
application stage. Other thick film sensors at present in the material development stage are the resistive humidity
sensor, the gas sensor and the ion selective sensor.
Advances in Thick Film Conductors for Microwave Integrated Circuits
Authors: Johnson R. Wayne , Rich Phil W. , Rich Debbie D. , Wilson Larry K.
Published: June 2007

New conductor pastes have made possible great improvements in the loss characteristics of thick film microwave
integrated circuits. This paper presents data on the microwave characteristics of transmission structures made from
newly developed copper, silver and gold conductor pastes on alumina and garnet substrates. The resistivity and
microstructure for each conductor material was examined for correlation with microwave properties. These data
show that thick film circuits can give excellent performance through 18 GHz.
The Sintering Mechanism of Aluminium and the Anodization of Aluminium Sintered Bodies
Authors: Okuma Sadao
Published: June 2007

It has been said that aluminium is hard to sinter. This is because a hard aluminium oxide film forms naturally on
exposed aluminium in air, and in the case of heat‐treatment for sintering, another type of hard aluminium oxide
file also forms. Thus aluminium is hard to sinter at about 600℃. The uthor has succeeded in manufacturing
aluminium sintered bodies, by using a vacuum, an inactive gas or a reducible gas atmosphere for the sintering
environment.

The possibility of producing a satisfactory dielectric on the aluminium sintered body was also investigated. An
aluminium sintered body has physical properties different from aluminium foil or plate, because it is always in the
porous state.

In this paper, the author presents the experimental results on aluminium sintered bodies manufactured under
various conditions and the results of anodization of the sintered bodies.
Investigation of the Dissipation Process in Electrolytic Capacitors
Authors: Cathey Leconte , Joyner Keith A.
Published: June 2007

An experimental study of electrolytic capacitors was conducted, with emphasis on their thermal properties.
The capacitors were subjected to charge–discharge cycles with various values of peak voltage. The observed power
dissipated did not agree with that which would be expected if constant capacitance and constant effective series
resistance (ESR) are assumed for the capacitors. In order to explain the discrepancy, the capacitance and ESR
variations were measured with respect to voltage, temperature, and frequency. A predicted power dissipation was
calculated for each capacitor; these dissipations compared favorably with those that were experimentally observed.
In addition, voltage versus time profiles were measured for each unit and these were analyzed to determine the
charge transport characteristics of the capacitors. The populations and mobilities of each type of charge carrier
turned out to be quite similar from one capacitor sample to the next.
National and Transregional StandardizationActivities and the Present World Market
Authors: Pokorny F.
Published: June 2007

On the occasion of the “Electronica 1978”, an exhibition of electronic components and modules held in Munich in
November 1978, a technical session took place entitled “Aspects of the International Standardization of
Components”. One of the four lectures on standardization reviewed current standardization activities in general. An
English version of this lecture is given below.

After describing the development of standardization at national, regional and international levels, the author
identifies the various organisations involved and explains how they cooperate. International standards are in the
future to be accorded priority in the interest of the international market. Some aspects of electronic materials are
discussed and new trends in standardization work indicated. In conclusion statistics covering the volume of work on
standardization and the cost factors involved are presented.

Some of these statistics, which are based on investigations conducted in Germany, may stimulate similar
investigations in other countries.
On the Inhibition of the Reaction Between Anodic Aluminum Oxide andWater
Authors: Sanz J. M. , Albella J. M. , Martínez-Duart J. M.
Published: June 2007

The reaction between anodic aluminum oxide and several passivating solutions of citric acid and ammonium
dihydrogen phosphate (ADP) is studied by capacitance measurements. In addition, the passivating effect of the
above solutions has been evaluated by the reaction of the oxide with pure boiling water and subsequent anodization.
The results show a strong passivating effect of the ADP solution which is partially diminished by the addition of
citrate ions.