bluuebunny/crossref_metadata_2025 huggingface dataset:
56‐3: Quantitative Evaluation of Neutral‐plane Splitting in Foldable Displays Using Folding Stiffness Measurements and Finite Element Method Simulations
Authors: Nishimura Masumi , Hishinuma Masatomo , Yamaguchi Hajime , Murayama Akio
Published: September 2020

Neutral‐plane splitting is essential for the durability and the usability of foldable displays. In this study, we use folding stiffness measurements and finite element method simulations to establish the relationship between split neutral planes’ positions and folding stiffness. Based on the relationship, the folding stiffness is predicted from the split neutral‐planes position.
56‐4: Suppression of Angular Color Shift for Foldable OLEDs by Integrating an Advanced Circular Polarizer
Authors: Xu Wei-Feng , Wu Fung-Hsu , Cheng Wei-Sheng , Shen Chun-Nan , Hong Cyun-Tai , Kuo Chen-Kuan
Published: September 2020

A circular polarizer combined with a microstructure layer was developed to reduce the angular color shift in a foldable organic light‐emitting diode display. We experimentally verified that the proposed structure was capable of withstanding multiple bending tests.
57‐2: A New Approach to Motion Frequency Metrics Quantifies Motion‐induced Blur
Authors: Stolitzka Dale , Chong Jong-Ho , Xiong Wei , Lee ChangHee , Kwag Jinoh
Published: September 2020

An objective metric has been created to characterize motion blur for equipment makers and product reviewers. This procedure can directly measure moving‐edge blur and process images to account for eye pursuit, frame rate and luminance. The advancement produces a motion frequency value that can be readily understood by the consumer.
57‐4: Simulation of Line‐Based MTF Measurements for Pixelated Displays
Authors: Masaoka Kenichiro
Published: September 2020

Physical pixel counts are not as effective as modulation transfer functions (MTFs) for characterizing the spatial imaging performance of displays. This study introduces a new method for measuring the MTF of a display by analyzing an image of a line reproduced on the display screen. The accuracy and consistency of this method is high for a wide range of pixel ratios, i.e., number of pixels of the measurement device per display pixel. The method is validated by using computer‐generated screen images of a model display with an RGB stripe subpixel arrangement.
58‐4: Efficient Cadmium‐Free Quantum Dot Light‐Emitting Diodes
Authors: Mo Hin-Wai , Harada Kentaro , Miyazaki Hiroshi , Adachi Chihaya
Published: September 2020

By utilizing a green thermally activated delayed fluorescence (TADF) material with an appropriate device architecture, we demonstrate the performance of indium‐phosphide‐based red quantum dot light‐emitting diodes (QLEDs) with an external quantum efficiency that exceeds 11%. The prolonged photoluminescence lifetime in the quantum dot/TADF bilayer system suggests that there exists sufficient excitonic energy transfer from the TADF molecules to the direct bandgap of the quantum dot emitters. The combination of TADF and quantum dot materials can facilitate development of highly efficient cadmium‐free red/green/blue QLEDs.
59‐2: Brightness Improvement of Reflective LCD
Authors: Ma Xinli , Zhao Wei , Zhong Xuan , Xu Tianyu , Chen Dongchuan , Wang Kaixuan , Zhan Hongming , Chen Xi , Xue Hailin , Shao Xibin
Published: September 2020

Through the comparison of the measurement results and the simulation results of the reflectivity, we have found an optical simulation method which can be applied to the reflectivity simulation of reflective LCD. The design of MRS can be optimized conveniently by the simulation method, and the best MRS design parameters were obtained. The optimized design of MRS may cause the RLCD high reflectivity.
60‐2: Self‐supervised Perceptual Motion Deblurring using a Conditional Generative Neural Network Guided by Optical Flow
Authors: Koh Jaihyun , Yoon Sungroh
Published: September 2020

The sample‐and‐hold characteristic of flat‐panel displays causes motion blur. Hardware compensation, such as frame‐rate doubling, is expensive, and existing methods of software compensation are slow. We propose a display motion deblurring network (DMDnet) which compensates for motion blur using a neural network trained on pairs of images with a synthetic random displacement between them. We assess the compensated images by convolving them with a kernel produced by a perceptual blur estimation algorithm, to simulate what is seen by a viewer. This technique is approximately 87 times faster than a state‐of‐the‐art optimization technique which produces an equivalent level of compensation; and its average PSNR is 29.70 dB, against 26.68 dB for the optimization.
61‐4: Invited Paper: Development of the OLED Mass‐Production System
Authors: Matsumoto Eiichi
Published: September 2020

Canon Tokki has developed a vapor deposition system for OLED mass production. The Substrate size is G6H (half‐size generation six (G6)) panel compatible, cluster type equipment, and productivity of 15k sheets per month (G6 size conversion). We have also developed an in‐line system for OLED‐TV production on G8H size panels and vertical G6F (full‐size G6 panel) equipment to meet future demands
64‐2: Metrology of Non‐Planar Light Sources Using Near‐Field Goniometric Measurement Method
Authors: Käläntär K , Tashiro Tomonori , Toyota Toshihiro , Yamauchi Yasuki
Published: September 2020

In this paper we study the metrology issues of non‐planar light sources (NPLSs). We use near‐field (NF) goniometric measurement method to characterize the NPLSs. By using the NF method, we obtain the luminance image, the intensity, the spectra and the color of the source as a function of the ray angle, i.e., the zenith and azimuth angles in spherical coordinate system. The NF light rays are used to obtain the characteristics of the light source at far‐fields by post processing. The results of the NPLS metrology and the features of the NF goniometric measurement system are reported.
65‐1: Invited Paper: Enhanced Efficiency of InP‐based Red and Green Quantum‐Dot Light‐emitting Diodes
Authors: Li Yanzhao , Li Dong , Kristal Boris , Feng Jingwen , Lu Zhigao , Chen Zhuo , Li Xinguo
Published: September 2020

Due to the inherent toxicity of cadmium selenide (CdSe)‐based quantum dots (QDs), Cd‐free alternatives are being widely investigated. Indium phosphide (InP) QDs have shown great potential as a replacement for CdSe QDs in display applications. However, the performance of InP‐based quantum dot light emitting diodes (QLEDs) is still far behind that of the CdSe‐based devices. In this study, we wanted to show the effects of different approaches to improve the performance of InP‐based QLED devices. We investigated the effect of magnesium (Mg) doping in ZnO nanoparticles, which is used as an n‐type electron transport layer, in balancing the charge transfer in InP‐based QLED devices. We found that an increasing Mg doping level can broaden the ZnO band gap, shift its energy levels, but most importantly, increase its resistivity; as a result, the electron current density is significantly reduced and the device efficiency is improved. We also investigated the effect of high‐photoluminescence quantum yield emitters and different QLED architectures on the device performance. Through optimizing QD structures and devices, red InP QLEDs with the current efficiencies reaching 11.6 cd/A and green InP QLEDs with the current efficiencies reaching 37.0 cd/A were fabricated.
65‐2: High Luminescent Red Quantum Dot Light‐Emitting Diodes by Inkjet Printing
Authors: Jia Siqi , Liu Pai , Tang Haodong , Ma Jingrui , Xu Bing , Li Guangyu , Wang Kai , Sun Xiao Wei
Published: September 2020

We report a high luminescent quantum dot light‐emitting diode by inkjet printing. The relationship between film morphology versus the ink formulation and the annealing were investigated. For the best ink formulation among a few dozen devices we studied, the luminance is as high as 42 000 cd/m2, and the current efficiency reaches 6.42 cd/A which is the highest reported for a very primitive device structure.
67‐1: Distinguished Paper: Efficient Multi‐Quality Super Resolution Using a Deep Convolutional Neural Network for an FPGA Implementation
Authors: Kim Min Beom , Lee Sanglyn , Kim Ilho , Hong Hee Jung , Kim Chang Gone , Yoon Soo Young
Published: September 2020

We propose an efficient deep convolutional neural network for a super‐resolution which is capable of multiple‐quality input, by analyzing the input quality and choosing appropriate features automatically. To implement the network in an FPGA and an ASIC, we employ a network trimming technique to compress the neural network.
67‐2: Lightweight Tone‐mapped HDRNET with Exposure Stack Generation
Authors: Jo So Yeon , Ahn Namhyun , Kang Suk-Ju
Published: September 2020

In this paper, we propose an efficient and lightweight deep neural network, LW‐HDRNET, which quickly and accurately reconstructs tone‐mapped high dynamic range (HDR) images. The proposed network generates over‐exposed and under‐exposed images from a single LDR image and then reconstructs the tone‐mapped HDR image. Experimental results show that the performance is better than the existing methods and has up to 4,000 times fewer parameters.
67‐4: Visual Simultaneous Localization and Mapping with Deep Neural Network Based Loop Detection for Augmented Reality
Authors: Li Yang , Chen Chao Ping , Liu Yuan , Chen Jie , Zhu Changzhao , Peng Ziqi
Published: September 2020

We present a visual simultaneous localization and mapping, in which a deep neural network is adopted for the loop detection. Its working principles, including the tracking, local mapping, loop detection, and global optimization, are set forth in detail. Its overall performance regarding the loop detection and trajectory estimation is investigated.
68‐2: View‐Dependent Light‐Field Display that Supports Accommodation Using a Commercially‐Available High Pixel Density LCD Panel
Authors: Li Tuotuo , Huang Qiong , Alfaro Santiago , Supikov Alexey , Azuma Ronald
Published: September 2020

Super multiview displays generally support only a small range of viewpoints. We describe a view‐dependent light‐field display approach that combines custom optics, eye position tracking, a high‐density display and a directional backlight to provide full parallax and a 3D volume from which a viewer can see 3D objects with accommodation.
70‐4: Distinguished Student Paper: Flexible OLED‐based Photonic Skin for Attachable Phototherapeutics
Authors: Jeon Yongmin , Choi Hye-Ryung , Park Kyoung-Chan , Choi Kyung Cheol
Published: September 2020

We demonstrate a very thin flexible OLED‐based photonic skin with a total thickness of 6 microns for application in attachable phototherapeutics. By controlling the peak wavelengths (600‐700nm) and irradiation interval of the flexible OLED, it was optimized, improving the regeneration effect of artificial skin by up to 70%.
71‐1: Fractional Pixel Method for Improved Pixel‐Level Measurement and Correction (Demura) of High‐Resolution Displays
Authors: Pedeville Gary R. , Rouse Joshua H. , Kreysar Douglas F.
Published: September 2020

As display resolution and pixel density increase, measuring the characteristics (luminance, color) of individual display pixels becomes more difficult for existing imaging technology. This paper describes a method of display pixel measurement using fractional imaging sensor pixels to accurately measure pixel‐level luminance for emissive (OLED, microLED) display qualification and demura.
72‐1: Invited Paper: Realizing Long Lifetime Blue Quantum Dots Light Emitting Diodes (QLEDs) through Quantum Dot Structure Tailoring
Authors: Wu Longjia , Liu Wenyong , Lu Zizhe , Yan Yiran , Zhang Jianxin , Xu Wei , Yang Yixing , Yan Xiaolin
Published: September 2020

The fast degradation of blue QLED is the most challenging issue in QLED, and we found out the conduction band minimum offset between blue QDs and ZnO is the primary reason. Instead of optimizing ETL layer, we alternatively tailored QD core‐shell structure and achieved greatly enhanced lifetime of blue QLED.
72‐3: Influence of Mobility Effect on Top‐Emission Red Quantum‐Dot Light‐Emitting Diode with Weak‐Cavity Structure
Authors: Lee Chun-Yu , Kuo Ya-Pei , Chen Peng-Yu , Lu Hsieh-Hsing , Lin Ming Yi
Published: September 2020

Optimization of mobility is critical to achieving carrier balance in quantum dot light‐emitting diodes (QLED) which in turn is essential for high performance devices. In this paper, our red top‐emitting QLED devices possess maximum current efficiency of ~25 cd/A. We find that with appropriate annealing temperature of quantum dots (QDs)/ZMO the charge transfer balance of the device can be improved. We also present a simulation results of carrier mobility V.S. device performance based on the software SETFOS from Fluxim AG. The carrier mobility simulation is agreed with the experimental results. We believe that an applicable annealing temperature is favorable to achieve carrier balance, highly efficient and color saturation devices for display applications.
73‐4: Invited Paper: Are Displays Giving Us the Blues?
Authors: Bullough John D. , Peana Stefan , Camardello Sam J.
Published: September 2020

As visual displays for computers, televisions, tablets and mobile phones grow brighter (and larger), concerns about their emissions of short‐wavelength (“blue”) light have emerged. This paper reviews the evidence underling these concerns, including the potential for blue‐light hazard, visual discomfort, and circadian disruption.
74‐1: Image Restoration for Display‐Integrated Camera
Authors: Lim Sehoon , Zhou Yuqian , Emerton Neil , Large Tim , Bathiche Steven
Published: September 2020

Under‐display camera is of great interest in the display industry potentially eliminating the display bezel and camera notch/hole in mobile devices. However, display panels cause complex signal modulation in the camera aperture which results in obscuration, attenuation and diffraction of the incident light. We propose a learning‐based image restoration approach to enable a camera to operate underneath the display without affecting the display contrast and color gamut.
74‐3: Image Deblurring of Camera Under Display by Deep Learning
Authors: Zhang Zhenhua
Published: September 2020

A deep learning method is provided in this paper to deblur images captured behind OLED screen named Camera Under Display (CUD). Because of optical diffraction of OLED pixel pattern, images captured by front camera under the display panel are unfavorably blurred. This paper proposed a modified GAN training network to deblur these images, with result showing perceptually clearer image with better restored high spatial frequency information.
77‐1: Design of Stretchable AMOLED Display with Transitional Area
Authors: Yang Qian , Wang Pinfan , Cao Fangxu , Liu Libin , Liu Zheng , Shi Shiming , Wang Dawei
Published: September 2020

In this work, a stretchable display based on LTPS AMOLED technology was designed. Our stretchable display, developed with a stretchable substrate with transitional area based on H‐type kirigami pattern design, can withstand a 10% stretch ratio. The result show that the stretch ratio of substrate with transitional area is 25% higher than the substrate without transitional area since the concentrated stress was slow‐released in the transitional area. Also, a more uniform bridge area layer structure and VDD signal was designed to ensure the stress and display homogeneity respectively. A TFE Dam was designed in each island to prevent the flowing organic encapsulation material.
77‐3: Wearable Organic Light‐Emitting Diode Displays ‐ From Fibers to Textiles
Authors: Song Young Jin , Cho Ha‐Eun , Song Ha‐Young , Ryu Jung‐Hoon , Lee Sung‐Min
Published: September 2020

Here we present a feasible approach to implement organic light‐emitting diode (OLED) fiber‐based textile displays that can overcome issues of limited electroluminescence performance and environmental durability, as well as of underdeveloped format of interconnectable fibers. Phosphorescence OLED pixels are formed on process‐friendly fibers, where a passivation system with robust polymer and circumventing metal pads is strategically designed for reliably interconnectable OLED fibers. A resulting woven textile of interconnectable OLED fibers can be successfully operated by the matrix‐addressing scheme, even in the water and under the stretch configuration.
77‐4: High‐Efficiency Flexible Fiber‐Based Light‐Emitting Devices Processed by Phosphorescent Solution
Authors: Hwang Yong Ha , Kwon Seonil , Kim Hyuncheol , Shin Jeong Bin , Choi Kyung Cheol
Published: September 2020

In this study, we show that it is possible to fabricate phosphorescent organic light‐emitting diodes (phOLEDs) on a flexible fiber substrate. We believe that this approach provides a way to overcome the problem of an insufficient efficiency that most fiber‐based light‐emitting devices have so far.
78‐1: Invited Paper: Application of OLED Area Light in Textiles: Approaches, Challenges, Limitations, and Perspectives
Authors: Hesse Jan , Keibler-Willner Claudia , Philipp André
Published: September 2020

OLED lighting elements are recognized as light emitting graphical elements. They can be shaped, patterned or inscribed in a plethora of ways. The possible feature diversity of OLEDs is highly attractive for the creative industry. With its outstanding key feature to provide high‐quality glare‐free a light with crisp light colors, as well as its flexibility and low weight, OLED technology is ideally suited for the use in fashion items like garments or accessories and other near body applications. In addition to the consumer‐oriented fashion business also a lot of professional applications in the security, rescue and outdoor industry are potential application fields for this new technology.
79‐5: Late‐News‐Paper: Bright and Narrow Green Emitting InP‐based Quantum Dots for Wide Color Gamut Displays
Authors: Kim Yongwook , Jang Hyosook , Min Ji Hyun , Jang Eunjoo
Published: September 2020

InP‐based quantum dot (QD) has been emerged as an environment‐friendly emitter for wide color gamut (WCG) display. In this work, we optimized the composition and structure of multishell on the InP core. As a result, photoluminescence quantum yield (PL QY, 95%) and the full width at halfmaximum (FWHM, 36 nm), with perfectly matched wavelength (528 nm) for the green color in WCG displays.
80‐1: OLED Gamut Mapping Method to Generate Exact Standard Color Results
Authors: Park Jongwoong , Song Jaewoo , Baik Jiyeon , Choe Wonjun
Published: September 2020

OLED display has many excellent points comparing the legacy LCD. The main good feature is the image quality. The wider gamut, real black and higher contrast ratio feature make the OLED display the best option for image quality. However, due to this wider gamut feature, OLED display color feature could not be optimal to the standard color, in example, sRGB or AdobeRGB. To make the best color feature in OLED display with standard color contents, Gamut Mapping Algorithm for OLED Display should be developed and applied. In this paper, the method and experimental result for this will be introduced.
80‐2: Spatiochromatic Model for Image‐Quality Prediction of High‐Dynamic‐Range and Wide‐Color‐Gamut Content
Authors: Wanat Robert , Choudhury Anustup , Daly Scott
Published: September 2020

This paper presents an approach to predicting image quality by spatially filtering images before generating color difference maps with pixel‐based color difference metrics. The resulting difference maps can then be pooled across the whole image. This approach was originally developed for CIELAB color space under the name S‐CIELAB. We extend this approach to use the recently developed ICTCP color space to improve the prediction accuracy for high dynamic range and wide color gamut images. The filtering is based on the chromatic and achromatic contrast sensitivity function of the human visual system. Our results on four existing subjective image quality databases containing high dynamic range and wide color gamut images show substantial improvements at low computational cost, outperforming existing color difference metrics.
81‐2: Invited Paper: Neural Network Based Quantitative Evaluation of Display Non‐Uniformity Corresponds Well with Human Visual Evaluation
Authors: Tsutsukawa Kazuki , Kobayashi Manabu , Bamba Yusuke
Published: September 2020

We developed a neural network‐based method for evaluation of display luminance and color non‐uniformity (which we call Mura). We studied a correlation between our developed method and human visual evaluation because visual evaluation is the gold standard for Mura evaluation. We achieved Pearson correlation coefficient of 0.82.
83‐3: TE‐Type AMOLED Display with Wide Viewing Angle and Ultra‐Low Reflectance
Authors: Abe Kaoru , Taguchi Tokio , Zhang Bai , Yamane Yu , Yasukawa Kohji , Kawato Shinichi , Mitsui Seiichi
Published: September 2020

AMOLED displays with highly viewing angle and ultra‐low reflectance have been developed.

Using light diffusion film and Moth‐eye technology, which indicates.
85‐2: Invited Paper: Fourth Gen Optics ‐ Planar Optics Revolutionized by LCD Technology
Authors: Tabiryan Nelson , Roberts David , Kimball Brian , Steeves Diane , Bunning Timothy J.
Published: September 2020

We will review the state‐of‐the‐art of the Fourth Generation Optics ‐ a planar optics rooted in LCD technology, ‐ and the advance it has enabled in display, AR/VR, imaging, and other critical modern technologies beyond displays. The review will lead to the conclusion that the technology is mature for many applications offering the most versatile and efficient techniques for controlling light with truly flat, thin film, achromatic, and high quality optical systems produced at low manufacturing cost inherent to LCDs.
85‐4: Enhancing Ambient Viewing Performance of Anisotropic Nano‐Structure Light Control Film
Authors: Wu Lung-Hai , Lee Kuang Tsin , Chuang Min Chao , Wu Pei-Hsun , Liu Pei-Yi
Published: September 2020

In 2019, we proposed the Anisotropic Nano‐Structure Light Control Film (ANSLCF). Through the combination of Nano‐Structure Thin film and anisotropic molecular, light with different polarization exhibits in different way, polarized diffused and polarized transparent. With such optical properties, ANSLCF could be applied to enhance the visibility of transparent display, picture quality of high resolution display and ultra‐slim design.

Based on above, this year, we proposed ANSLCF integrated with polarizing function element. With the additional polarizing function, the new ANSLCF could further improve the sunlight visibility , wide‐viewing angle image, and better transparency. At the same time, traditional hot‐spot and second projection image from the projector could be suppressed.
86‐4: Color Conversion Enhancement of Perovskite Quantum Dots by Integrating with Cholesteric Liquid Crystals
Authors: Pan Su , Duan Miao , Hu Zhiping , Li Dongze , Chen Shu‐jhih , Zhang Xin
Published: September 2020

In this study, cholesteric liquid crystals (CLCs) are integrated with quantum dot color conversion (QDCC) display to increase the light efficiency. The CLC structure is designed to selectively reflect the blue excitation light, and thus the green emission from the perovskite quantum dots (QDs) is enhanced. An improvement of luminance by 21% is achieved.
86‐5: Late‐News‐Paper: Giant Shell Quantum Dots for Color Conversion and as Active Material in QLEDs
Authors: Krohn Sonja , Schicke Hendrik , Niehaus Jan
Published: September 2020

We present an automated and up‐scaled synthesis of giant‐shell QDs (GSQD). For color conversion, these particles will be incorporated in a suitable matrix with high QD content and transferred onto a blue light LED. We will also show results of QLEDs with a thin film of GSQD as active material.
P‐2: Hydrogenated SnO for p‐channel oxide Thin Film Transistor
Authors: Lee Alex Wootae , Matsuzaki Kosuke , Nomura Kenji
Published: September 2020

Subgap defect termination for p‐type Tin monoxide (SnO) is developed with thermal annealing in hydrogen ambient for p‐channel oxide thin‐film transistor (TFT). High‐performance p‐channel oxide TFT with the TFT mobility of ~1.4‐1.8 cm2/Vs and large on‐to‐off current as large as 105 was demonstrated. Hydrogen‐containing annealing also maintains SnO phase stable up to 390 °C and effectively reduces the subgap defect, which offer the improvement in TFT characteristics.
P‐3: Effects of Negative Bias Illumination Stress on IGZO Device and Luminance Behaviors in OLED Display Panel Operated by AC Conditions
Authors: Im Kiju , Kim Hyojung , Hwang Hyuncheol , Kim Junehwan , Khim Taeyoung , Chung Sam , Park Jongwoo
Published: September 2020

Effects of light on InGaZnO (IGZO) thin film transistors were investigated under the AC gate bias illumination stress. DC NBIS on IGZO device results in dramatic negative Vth shifts. Whereas, Vth shift tends to disappear when the specific AC gate stress is applied with light exposure. We found that NBIS effect is released in specific pulse peak bias zone for fixed pulse frequency, base pulse voltage and duty. Hence, if we employ the pulse shape in specific zone, intrinsic reliability concerns over IGZO device particularly with NBIS would not be technical huddle for volume manufacturing production.
P‐4: Enhanced Scalability and Reliability of High Mobility Elevated‐Metal Metal‐Oxide Thin‐Film Transistors with Bandgap Engineering
Authors: Xia Zhihe , Liu Xuchi , Wang Yuqi , Li Jiapeng , Chen Rongsheng , Lu Lei , Kwok Hoi-Sing , Wong Man
Published: September 2020

The effects of bandgap engineering on the performance of elevated‐metal metal‐oxide thin‐film transistors were investigated. The incorporation of gallium in the indium‐tin‐zinc oxide thin‐film transistor channel was shown to lead to enhanced scalability and reliability. The improvement is attributed to the effective widening of the energy band, and the reduction of the population of defects and background carriers.
P‐6: 4‐side Micro Border 8k4k LCD with Oxide‐TFT Gate Driver Embedded Array
Authors: Na ManHong , Tung Che-Wei , Lin YuZuo , Lin Wei-Li , Chen Center
Published: September 2020

We have realized the 4‐side micro (0.9x/0.9x/0.9x/0.9x mm) border 8k4k 120Hz LCD with Oxide thin‐film transistor (TFT) for the first time. Most of narrow border prototypes in past was 3‐side with 2‐COF process for both gate and data driving, but now, we have been developing the most cost effective 4‐side micro border LCD with only data COF. As core technology, 1G1D pixel driving and GDCIAA (Gate Driver Circuit in Active Area) with oxide TFT backplane are incorporated without any additional investment of module assembly. In practical point of view, this technology can render about 70% reduction of D‐IC cost and additional value up as a form factor of premium product compare to a‐Si TFT based LCD. Moreover, simplified 1G1D bus line structure can contribute to production yield improvement. In this report, we present the most valuable 8k4k LCD product with the latest AUOs Oxide TFT backplane technology.
P‐7: Improvement of Electrical Stability of In‐Ga‐Zn‐O Thin‐film Transistors by Incorporation of Polytetrafluoroethylene in the Back Channel Region
Authors: Lee I Sak , Na Jae Won , Kang Byung Ha , Kim Hyung Tae , Kim Hyun Jae
Published: September 2020

In this research, polytetrafluoroethylene (PTFE) is proposed as a dopant for indium gallium zinc oxide (IGZO) to improve the electrical characteristics of IGZO TFT. Especially, PTFE is incorporated in the back channel region of IGZO TFT and this leads to improved electrical stability against positive bias stress (PBS) and negative bias illumination stress (NBIS). When compared with conventional IGZO TFT, the threshold voltage shifts of PTFE doped IGZO TFT after PBS and NBIS tests are drastically improved from 4.94 to 1.18 V and 16.63 to 6.31 V, respectively.
P‐8: Degradation Model of LTPS TFT Aged off‐State Bias Stress on Flexible Substrate
Authors: Kim Kihwan , Kim Hyojung , Song Minjun , Kim Soonkon , Cho Hyunguk , Cho Youngmi , Kim Yongjo , Choi Byungdeog
Published: September 2020

We conducted experimental and quantitative studies on the effects of off‐state bias stress on the p‐type polycrystalline silicon thin film transistors (TFTs) on flexible substrate and presented an off‐stress bias stress model(=aging model) of leakage current using TCAD simulation. To understand and model the underlying mechanism of these results, we developed a spatial defect generation and charge trapping model utilizing mapping technique. We had to implement different forms of aging model in the two regions: 1) charge trapping in poly‐Si / oxide interface, and 2) defect creation in the channel bulk. Our aging model quantitatively demonstrates why the GIDL current is lowered accompanied by changes in threshold voltage and asymmetric characteristics.
P‐14: Electrical Characteristics of P3HT:TIPS‐Pentacene Blend Organic Thin‐Film Transistor under Light Irradiation
Authors: Shin Hyunji , Park Jaehoon , Choi Jong Sun
Published: September 2020

The electrical characteristics of solution‐processed Poly(3‐hexylthiophene) and 6,13‐bis(triisopropylsilylethynyl)pentacene blend thin‐film transistors were investigated under various light irradiation wavelengths. We present the phototransistor that improved photoelectric effect through heterogeneous blending and expands the absorption region.
P‐193: Late‐News‐Poster: A Novel Charge Based TFT Compact Model Applicable to Image‐Retention Simulation of AMOLEDs
Authors: Kawachi Genshiro
Published: September 2020

A novel TFT compact model based on surface potential and charge calculations has been developed. Two kinds of non‐quasi‐static (NQS) models are included to describe the transient effects of TFTs. Appling the new model, accurate simulation of image retention phenomena in AMOLEDs was realized.
P‐194: Late‐News‐Poster: Selenium 4p Orbital Enables High‐Mobility p‐Type Tin Oxyselenide Semiconductor for Thin‐Film Transistor Applications
Authors: Kim Taikyu , Jeong Jae Kyeong
Published: September 2020

Development of p‐type inorganic semiconductors for high performance thin‐film transistor (TFT) can be an essential ingredient for next‐generation display applications which requires a low power consumption. However, the conventional p‐type oxide semiconductors exhibit the poor electrical characteristics, which is mainly attributed to the inefficient conduction path formation from oxygen 2p orbitals. Here, we report a new p‐type material, tin oxyselenide (SnSeO) semiconductors for high performance p‐channel TFTs. The SnSeO was designed with the concept that valence band maximum (VBM), hole conduction path, becomes delocalized by hybridizing selenium 4p and tin 5s orbitals. The SnSe0.56O0.44 thin‐film exhibited the highest Hall mobility of 15.0 cm2 V‐1 s‐1 and hole carrier density of 1.2 x 1017 cm‐3. In addition, the SnSe0.56O0.44 TFT showed the excellent field‐effect mobility of 5.9 cm2 V‐1 s‐1 and current modulation ratio of 3.0 x 102. This high mobility is explained by the low hole effective mass through valence band engineering, which was confirmed by density functional theory calculation. Moreover, complementary metal oxide semiconductor (CMOS) inverter using the p‐type SnSe0.56O0.44 with n‐type IGZO showed excellent intrinsic gain of 15.7. This anion hybridization can provide a facile route to the realization of a high performance p‐channel TFT for next‐generation displays.
P‐195: Late‐News‐Poster: Data Retention in Pixel Drivers Based on Source‐Gated Transistors
Authors: Bestelink Eva , Dale André , Sporea Radu A.
Published: September 2020

We have recently demonstrated that, contrary to conventional TFT design rules, emissive pixels based on source‐gated transistor drivers benefit from choosing a source‐gate overlap of several microns. Using TCAD simulations we show that incorporating the SGT overlap capacitance with that of the conventional storage capacitor, pixel area can be optimized, with no adverse impact on data retention. For the technology considered, the optimum source‐gate overlap was 4 ‐ 8 μm, which is in the range of highest operating frequencies for source‐gated transistors.
P‐197: Late‐News‐Poster: Visual Advantages of Curved Displays for Working Efficiency
Authors: Park Daeun , Seo Wonyoung , Cho JaeEun , Hong HaeRyung , Kim YoonJung , Park YungKyung
Published: September 2020

Displays with large curvature far up to 1000R have been studied to increase visual performance and to reduce visual fatigue. This can be attributed to structural factors resulting from variations in the shape of monitors of the same size which causes differences in the observer's field of view. In this study, the visual performance of the curved display in an aspect of working tasks was examined in relation with the tilted and viewing field angle. An experiment using 27" flat‐panel LCD and 1800R and 1000R curved LCD was performed. The analysis of the experimental results was done by comparing the average of the time spent on five tasks in each display: Reading, Searching, Typing, Shape Adjusting, and Line Drawing. Thus, if curvature increases to 1000R at 27" size, it can be confirmed that the viewing field and tilted angle effects can improve visual navigation and reduce distortion of shape perception, thereby improving work efficiency.
P‐27: See‐Through Projection System with Dot Matrix Phosphor Screen
Authors: Chueh Yu-Chen , Liong Yong-Lin , Chi Gilbert , Chiang Wilbur , Chen Huang-Ming Philip , Chen Cheng-Huan
Published: September 2020

A 7″ screen with dot matrix blue phosphor covering 22% of the screen area has demonstrated wide viewing angle and sharp picture performance when working with 405nm DLP projector or LCoS holographic projector. The parallel transmission of the screen measured from haze meter is 70%, which makes the background scene crystal clear.
P‐29: Wide Visual Angle Anti‐Reflection Film
Authors: Chang Ya-Chun , Xu Wei-Feng , Wu Meng-Chieh , Hong Cyun-Tai , Kuo Chen-Kuan
Published: September 2020

A wide visual angle anti‐reflection film with low reflection property under zero visual angles and more than 40 degree to 70 degree visual angle was developed. In addition, due to the functional layer in the wide visual angle anti‐reflection film, the new film can reduce the angular reflective color shift at large visual angle.
P‐32: Novel Gate Driving Circuit Integrated within Active Area Based on Amorphous Oxide TFT
Authors: Wang MingXin , Zhou Liufei , Wang Zhijun , Xu Shangjun , Shu Yang , Wang Huaipei , Yuan Ling , Bian Cunjian , Fei Mi
Published: September 2020

In this paper, we present a novel display panel framework and gate driving circuit which located within active area. The uniformity of gate driving circuit which evenly distributed in the whole pixel area is guaranteed by the adoption of BCE amorphous oxide TFT.
P‐38: A New Pixel Architecture for Low‐Power LCDs with Oxide TFTs
Authors: Kim Jongbin , Jo Jae-Hee , Chung Hoon-Ju , Lee Seung-Woo
Published: September 2020

A new memory‐in‐pixel (MIP) circuit using oxide thin‐film transistors (TFTs) to achieve low power consumption is proposed. The display employing the proposed pixel circuit can greatly reduce the power consumption due to extremely low leakage current of oxide semiconductor TFTs. By fabricating the circuit with oxide TFT process, the circuit performance under continuous operation is successfully verified without additional programming. The power consumption in the panel (except backlight) can be reduced to 0.03% of that of conventional LCD.
P‐39: A 1.05% Sensing Error Current Comparator for AMOLED Displays with External Compensation
Authors: Bai Wenlong , Yi Shuiping , Lam Hing-Mo , Zhang Min , Zhang Shengdong , Jiao Hailong
Published: September 2020

External compensation is an effective scheme to adapt the threshold voltage variations of the driving Thin‐Film Transistors (TFTs) and the deterioration of the Organic Light‐Emitting Diodes (OLEDs) in pixel circuits of Active‐Matrix Organic Light‐Emitting Diode (AMOLED) display systems. In this paper, an accurate current comparator is proposed to sense the difference between the current trickling through the OLED and the reference current, so that the deterioration and variations of TFTs and OLEDs in the AMOLED pixel circuits can be detected and compensated effectively. The proposed current comparator is demonstrated in a source driver chip for AMOLED panel with external compensation and fabricated in a 0.25‐μm high‐voltage CMOS technology. The sensing accuracy of the proposed current comparator is less than 5.3 nA by chip measurement with 500 nA reference current. Furthermore, the sensing error of the proposed current comparator is lower than 1.05%.
P‐41: Mechanical Reliability of Glass in Curved Displays
Authors: Jang Bosun , Tremper Amber , Scannell Garth , Ono Toshihiko
Published: September 2020

This paper talks about Corning's approach and recommendations regarding the mechanical reliability of glass for curved displays.
P‐49: Ultimate Solution: The Belt Plane Source Evaporators for Future AMOLED and QD OLED TV
Authors: Hwang Changhun , Kim Sung Su , Chin Byung Doo
Published: September 2020

There are two type evaporators such as cluster and inline equipped with linear sources in OLED manufacturing. The inline type evaporator has been used for WOLED and QD‐OLED and there is a glass substrate bending problem in 10G size manufacturing. The cluster type evaporator has been used for AMOLED and there is a shadow distance limitation to improve the display resolution. The belt plane source FMM evaporator and the vertical belt plane source evaporator equipped with three dimensional shape plane sources will be used for very high ppi (pixel per inch) AMOLED and 10G OLED TV device, respectively. They are the ultimate evaporator‐solutions.
P‐57: Preparation of Patternable High Resolution and High Refractive Index Materials for AR/VR
Authors: Hikida Jiro , Chisaka Hiroki , Ijima Yoichiro , Liao Yuehchun , Konno Kenri , Hirano Isao , Misumi Kouichi , Shiota Dai , Ohmori Katsumi
Published: September 2020

The patternable materials have been improved to be high transparency, high resolution, and adaptable for patterning with photolithography, ink‐jet print and imprint. Moreover, combination of high refractive index materials and the patternable technologies led to wider applications for next generation of display industry, such as AR/VR and smart glasses.
P‐65: Analysis on Local Area Cell Parameter Distribution Cause by Different Dosage on Photo Alignment PI of FFS mode LCD
Authors: Huang Kun-Tsai , Hung Yu-Wen , Fang Ri-Xen , Lin Sung-Chin , Yu Chia-Hua
Published: September 2020

Fringe‐Field Switch (FFS) mode cell with Photo alignment technology have been widely used in many kinds of devices due to its excellent performance of LC display. In this paper, the local area cell parameter, include cell gap, pre‐tilt angle and twist angle of dosage have been compared.
P‐68: Proposal of Novel Polymer Materials with No Birefringence over Wide Temperature Range
Authors: Watanabe Kohei , Yuma Kobayashi , Koike Yasuhiro
Published: September 2020

We propose two types of temperature‐independent zero—zero‐birefringence polymers (TIZZBPs), which have different Tgs of 194ºC and 156ºC. These TIZZBPs also exhibit sufficient mechanical strength and high transparency. These TIZZBPs will achieve real‐color images not only for vehicle‐mounted displays but also for flexible displays.
P‐71: Concept of Stereoscopic Full‐Screen Resolution Flicker‐Free Imaging of Two Three‐Dimensional Scenes Simultaneously for Two Observers Using a Single 120 Hz Amplitude‐Polarization Imager
Authors: Ezhov Vasily A.
Published: September 2020

The described method provides stereoscopic imaging of two different three‐dimensional (3D) scenes in parallel for two observers without flicker at 100‐120 Hz frame rate using a single flat amplitude‐polarization imager (API). During each of two working subcycles, the API screen reproduces simultaneously a pair of full‐screen resolution view images of two 3D scenes with the help of information‐dependent light polarization coding of two image elements in each screen pixel. Two observers use two different sets of liquid crystal (LC) shutters with input polarizers serving as complementary polarization decoders. The shutters are implemented in the form of two active stereo glasses or two active distant binocular filters (DBF).
P‐72: An Autostereoscopic Display with a Deep Viewing Zone Using Time‐Multiplexed Directional Backlight
Authors: Borjigin Garimagai , Kakeya Hideki
Published: September 2020

We propose a high‐resolution autostereoscopic display that has a deep viewing zone based on time‐multiplexed directional backlight using a large aperture Fresnel lens. When the distance of a viewer from the display changes, the depth of light source should be changed to avoid stereoscopic crosstalk. By combining a DMD projector with layered PDLC screens, the depth of the light source is electronically changed to follow the viewer's motion, which expands the viewing zone in the depth direction.
P‐76: Object Distance Adjustment and Location Technology in VR
Authors: Yuhong Liu , Ke Li , Zhanshan Ma , Haoran Jing , Zheng Ge , Jinbao Peng , Xuefeng Wang , Hao Zhang , Wenhong Tian , Lili Chen
Published: September 2020

In order to make VR technology better serve the myopic population, the realization and application of object distance adjustment and location technology in VR are discussed in this paper. And, a new type of VR display device with auto zoom function is designed, which uses "Double lens + 2.1 inch screen". The display image distances can be adjusted by changing the different positions of lens2, which can be used for myopia compatibility of users. The moving resolution of Lens2 is 1μm and the adjustable period is 16.08‐25.73 s. In each cycle, the images changes from clear to blurred, and to clear. It can help exercise the users’ ciliary muscles. Finally, Through calibration, the device can be used to measure user's vision. The visions of 20 people were measured, and then that were compared with the results measured by the eye chart. The proportion of difference less than 0.1 is 90%, which indicates that it is feasible to measure vision by using object distance adjustment and location technology.
P‐203: Late‐News‐Poster: Impact of Optical and Surface Qualities of High‐Refractive‐Index Glass Wafer on Performance of AR/MR Glasses
Authors: Amma Shin-ichi , Shibata Akira , Shibuya Tomohiro , Yonehara Toshiya , Nakayama Motoshi , Ueki Shinji , Uemura Jin , Fujiwara Teruo , Takeshita Nobuhiko
Published: September 2020

New glass wafer suitable for waveguide of AR/MR glasses was developed. This wafer has high refractive index, superior transmittance and ultimately high smoothness, which realize highly efficient light propagation. We fabricated eye piece with the wafer and demonstrated it enables AR/MR glasses to display wider and brighter image.
P‐204: Late‐News Poster: Stereoscopic AR Displays ‐ Towards Solid‐State Multi‐Focal Architecture
Authors: Osmanis Krišs , Zabels Roberts , Ozols Ainārs , Narels Mārtiņš , Osmanis Ilmārs
Published: September 2020

In this work an entirely solid‐state multi‐focal display architecture for augmented reality near‐eye displays is introduced and analyzed. At the core of the solution is volumetric display module with discrete image depth planes as means of mitigating vergence‐accommodation conflict in stereoscopic systems and enabling safe near‐3D‐content output. The physical image depth planes are realized as switchable liquid‐crystal based optical diffuser elements. Our analysis includes evaluation of the role of a cell‐gap and spacers on a resultant image quality.
P‐205: Late‐News Poster: Head‐Mounted Display with Aspherical Phase Plates to Reduce Visual Fatigue
Authors: Iida Ryota , Miyajima Yasushi , Kato Kazutoshi , Takaki Yasuhiro
Published: September 2020

Adding aspherical phase‐plates to HMD has been proposed to reduce the visual fatigue caused by vergence‐accommodation conflict. The phase‐plates enlarge the DOF of virtual images to facilitate accommodation variation. DOF was measured and subjective evaluation using SSQ was conducted.
P‐80: Light‐Adjustable Optoelectronic Neuromorphic Device for Artificial Visual Display System
Authors: Kwon Sung Min , Cho Sung Woon , Shin JaeCheol , Shin Seung Beom , Park Sung Kyu
Published: September 2020

In this report, we demonstrated optoelectronic neuromorphic device to mimic the biological visual system. This artificial visual system was fabricated by monolithically integrating a photovoltaic divider and a synaptic transistor. The device showed synaptic functionalities such as short‐term plasticity (STP), long‐term potentiation (LTP), and neuromorphic facilitation with various light input range. Moreover, this artificial visual display system performed light‐adjustable perception behaviors such as photopic or scotopic adaptation.
P‐84: The Effects of Bias Sputtering on the Properties of ZnO Nanorods Prepared from As‐deposited Thin films by Reducing Annealing Method
Authors: Li Chaoyang , Zhang Qiang , Ueno Yudai
Published: September 2020

ZnO thin films were deposited radio frequency magnetron sputtering with a bias power. The highly‐orientated ZnO nanorods were prepared from ZnO films by an annealing process. The effects of bias on the properties of ZnO films and ZnO nanorods were investigated. The obtained ZnO films exhibits the comparable properties with different bias powers. ZnO nanorods were highly vertically grown. The compressive stress of ZnO nanorods showed a trend of increase with the bias power increasing. The obtained ZnO nanorods are expected for sensing application in displays.
P‐86: Electrospinning of Perovskite Crystals with Strong Emission and Improved Electrical Conductivity
Authors: Chen Yani , Wang Jinjie
Published: September 2020

Herein, we have successfully employed the electrospinning technique to modulate the growth of perovskite crystals, which are micro‐sized and tetrakaidecahedral, showing strong emission and remarkably improved electrical conductivity by 4‐5 orders of magnitude compared to spin‐coating and composite nanofibrous analogues, due to their ordered structures.
P‐97: Applications of Metal Halide Perovskite as Passive and Active Light Emitting Materials
Authors: Wenger Bernard , Jones Simon
Published: September 2020

Metal halide perovskites are promising materials for display applications as phosphors and active layers in light‐emitting diodes. Here, we briefly review the physical properties that make them suitable in such products, namely their high absorption and emission coefficients, combined with good charge transport properties and ease of fabrication. Then, we report on the development of green perovskite emitters and the fabrication of down‐conversion films for backlight units (BLUs). Finally, we summarise our recent development in perovskites LEDs, showing how we have reached commercially‐relevant efficiencies for each color channel.
P‐99: The Size and Temperature Effect of Ideality Factor in GaN/InGaN Multiple Quantum Wells Micro Light Emitting Diodes (Micro‐LEDs)
Authors: Liu Yibo , Zhang Ke , Chan Joe , Yeung Sze-Yan , Liu Zhaojun , Kwok Hoi-Sing
Published: September 2020

In this paper, we reported a GaN/InGaN multiple quantum wells (MQWs) micro light emitting diode (Micro‐LED) device with green light emission. For electronic performance, the Micro‐LED device exhibited a forward voltage of only 2.61 V at the current density of 10 A/cm2. For illumination performance, the emission light had 519 nm peak wavelength with a full width at half maximum (FWHM) of 22 nm. Furthermore, the diode ideality factor (n) was calculated and analyzed with different temperature categories (303 K to 573 K) and pixel sizes (30 μm to 200 μm), revealing a lower value of n with temperature growing and device scaling down.