bluuebunny/crossref_metadata_2025 huggingface dataset:
Expert Vision Systems in Archaeometry
Authors: Russ John C. , Rovner Irwin
Published: August 2016

In the analysis of object or material form and structure, especially micro-structure, correlations of material properties with their microstructure, and of structures with their production history and function, are at the heart of much of artifact and fossil analysis in archaeometry. Presently, a great deal of such examination of archaeomaterials is either:

∎ qualitative, descriptive and anecdotal, comparing “representative” specimens to illustrate the differences of mean, typical, or normative structures, and forms; or

∎ limited to measurement of parameters which oversimplify the structure or are easily measured by hand, e.g., length, width, and thickness.

These do not differentiate shape variation or describe irregular shapes effectively. Hand measurements, even simple ones, are often difficult to derive on microstructures or on irregular macroscopic-sized objects and normally involve too few data points for statistical interpretation. Images of tesselated mosaics and multiphase microstructures in materials such as metals or ceramics are often chaotic and irregular in form, size variation and distribution of elements, inclusions and phases. Because of this, they are difficult to quantify precisely or accurately. Moreover, analysis is often limited more by the need to minimize destruction to an irreplacable artifact or art object than by a method's ability to generate significant data. Sample size is often held at the minimum threshold of significance or adequacy. Thus, any method which enhances the quality and quantity of such data should be welcome in archaeometric research.
Up Close: Advanced Light Source at Lawrence Berkeley Laboratory
Authors: Robinson A. L.
Published: August 2016

A marriage of the new and the old is under way at the Lawrence Berkeley Laboratory (LBL), Berkeley, California. The new is the Advanced Light Source (ALS), a facility for generating laser-like, partially coherent beams of x-ray and ultraviolet (collectively, the XUV) synchrotron radiation of unprecedented spectral brightness. (See Figure 1.) The old is the domed hall that has sheltered the historic 184-inch cyclotron, a nuclear accelerator built 46 years ago by the laboratory's founder E.O. Lawrence. The ALS is to reside in an enlarged version of the old hall, a familiar landmark in the Berkeley-San Francisco area whose architectural features are to be preserved.

Another sign of the marriage is an increased emphasis on materials research. Though by no means forsaking its nuclear science origins, LBL has seen its budget for materials research grow steadily in recent years, especially with the establishment of the Center for Advanced Materials and the construction of two new laboratories to house its activities. [See the April 1988 MRS BULLETIN, p. 54, for an Up Close article on LBL's National Center for Electron Microscopy.] With its focus on the use of electromagnetic radiation for structural and spectroscopic studies of physical, chemical, and biological systems, including those investigated by materials researchers, the ALS fits neatly into this new emphasis. In fact, funding for the $98.7 million ALS comes to LBL through the Division of Materials Sciences of the U.S. Department of Energy (DOE).
Physics of Thermal Wave NDE of Semiconductor Materials and Devices
Authors: Opsal Jon , Rosencwaig Allan
Published: August 2016

Thermal wave physics is playing an ever increasing role in the on-line characterization of semiconductor materials and devices. This is especially true for thermal wave methods that employ laser beams for both the generation and detection of thermal waves. For the modulated reflectance method discussed here, the pump and probe beams are focused on the same spot. They therefore achieve the noncontact advantage of optical methods in addition to the optimum condition for high spatial resolution, a necessary condition for thermal wave measurements on product wafers.

When a material is excited with an intensity-modulated laser beam or pump, a thermal wave is generated in the material and in the air above the sample. The material within this heated region will undergo a thermal expansion which can be detected with a probe beam interferometer or by deflecting the probe beam from the thermoelastic deformation of the surface. Since the complex refractive index of most materials depends on temperature, a modulated temperature will also induce a corresponding modulation in the refractive index and consequently a modulation on a probe beam passing anywhere near the thermal wave. A probe beam directed along the heated surface of the sample, for example, will be deflected as it passes through the heated region above the surface. This mirage effect can also be observed within the sample by directing a transmitting probe through the heated region beneath the surface. Likewise, using a probe beam directed onto the sample surface one can observe a modulation in reflection, transmission, or scattering. A related noncontact method is the photothermal measurement of infrared radiation emitted from the material's heated region. Note that with all these detection methods, thermal wave measurements can be, and most often are, done in air and at room temperature.
Real-Time X-Ray Diffraction For Materials Process Control
Authors: Green R.E.
Published: August 2016

As useful as classical x-ray diffraction techniques have been, the ability to obtain x-ray diffraction images with extremely short exposure rimes opens up new opportunities for materials scientists, including real-time materials process control. This article briefly describes state-of-the-art systems for obtaining extremely rapid and real-time x-ray diffraction images and gives several examples of their applications for materials process control.

Two generic electro-optical methods permit real-time viewing and recording of x-ray diffraction images. The first uses a low-intensity conventional x-ray tube source leading to a low-intensity diffraction image, which requires a high-gain electro-optical imaging system. The second uses either a high-intensity rotating anode, synchrotron, or flash x-ray source. Such a high-intensity source produces a high-intensity diffraction image, permitting use of a low-gain high-resolution electro-optical imaging system.

Figure 1 schematically shows two types of image intensifier tubes which have been most often used to view x-ray diffraction images. By cascading three individual first generation image tube stages (Figure 1a), light gains as high as several million can be obtained. The second generation microchannel-plate image intensifier tube (Figure 1b) is similar to a single-stage first generation device except for the extremely important addition of a microchannel plate.
High-Performance Polymer Fibers
Authors: Adams W. Wade , Eby R. K.
Published: August 2016

Since the pioneering work of Carothers which led to the introduction of strong nylon fibers by DuPont in the 1930s, polymer scientists have pursued the development of high-performance fibers to replace natural or metallic products, both to improve mechanical properties and to reduce weight. That development was relatively slow and evenly paced until DuPont again revolutionized the field with the release of Kevlar™, an aromatic polyamide with unprecedented mechanical properties. Since then, the field has literally boomed with new developments, and now organic fibers are available with properties that compete with the best inorganics and are far superior to metal fibers.

Strong motivation for the invention of new organic fibers comes from the aerospace industry, which seeks fibers to use in reinforced composite structural materials. Composites bring new advances in stiffness (airplane wings can't bend too much!) in weight savings (every kilogram saved in the structure of an airplane saves $120 over its lifetime, and in a spacecraft $10,000), and in radically new ideas, such as radar-invisibility (stealth)5 and mission-adaptive wings (in-flight variable-shape wings). Hence, for a variety of specialty applications, otherwise commercially indefensible materials become viable.

It may be somewhat counter intuitive to materials scientists unfamiliar with polymers to expect polymer mechanical properties to be greater than in the best metals. The origin of high strength and stiffness in a polymer fiber is the covalent bond, especially when aligned in an ordered array of long chain molecules.
Current Research Issues in Silicon Nitride Structural Ceramics
Authors: Pasto Arvid E.
Published: August 2016

Ceramics have long been known for their refractoriness, or ability to bear loads at elevated temperatures. However, until the 1960s, the predominant refractory ceramics were oxide-based materials such as silica, zirconia, alumina, mullite, magnesia, and their combinations, including silicates. These ceramics were, and still are, used for firebrick furnace linings, crucibles and liquid metal carrier liners, regenerators, and recuperators.

However, these materials all possess some characteristic which precludes their use for very high stress, high temperature applications. Typically, the silicates form viscous liquids which allow creep, while zirconia and alumina suffer from poor thermal shock resistance, and magnesia possesses a large thermal expansion coefficient. Consequently, for heat engine applications which involve high temperatures, high stresses, sudden temperature changes (e.g., startup), and may involve the maintenance of tight operating tolerances, a new family of materials is required. The requisite properties for heat engine applications may be found in certain non-oxide materials, namely silicon nitride and silicon carbide. They possess high strength even at high temperatures, low thermal expansion coefficient, and excellent thermal shock resistance. These materials are not thermodynamically stable in air at elevated temperatures and will eventually react to form oxides. Nonetheless, they possess excellent oxidation resistance by virtue of protective silica-based glass oxidation layers.
Multilayers: A Research Tool for Mechanical Property and Alloy Phase Stability Investigations
Authors: Jankowski A.F.
Published: August 2016

The magic of multilayer structures — comprised of a regular repeating pattern of alternating layers that vary in thickness from less than 1 nm to more than several micrometers — is present today in nearly every facet of materials science.

A technological gamut of issues has been approached through the use of multilayer structures. Material systems have been routinely investigated, ranging from simple binary through complex quaternary and including nearly every element of the periodic table. Applications include thin-film semiconductor devices in the form of strained-layer superlattices; protective coatings for improved surface hardness and wear resistance of conventional alloys (tribology); and reflective and transmissive x-ray optical devices. Multilayer structures have also provided an experimental means to investigate the interdiffusion and stability of alloy phases; the relationship between the presence, lack, or variations of crystallinity with magnetism (and most recently superconductivity); and the role of interfaces in adhesion and elastic/plastic behavior.
Materials Analysis with High Energy Ion Beams Part II: Channeling and Other Techniques
Authors: Gossmann H-J. , Feldman L.C.
Published: August 2016

This article discusses uses of high energy ion beam scattering for materials analysis, including channeling, particle induced x-ray emission (PIXE), and nuclear reaction analysis (NRA). These additional capabilities used in conjunction with RBS equipment provide capabilities for crystalline defect studies and light element detection.
Materials Analysis with High Energy Ion Beams Part III: Elastic Recoil Detection
Authors: Dunselman C.P.M. , Bik W.M. Arnold , Habraken F.H.P.M. , der Weg W.F. van
Published: August 2016

The fundamentals of the high energy ion beam technique Elastic Recoil Detection are presented. The potential of this analysis technique for the depth-resolved determination of light elements in a heavy matrix is illustrated with examples from semiconductor technology.
Chalcogenide Glasses
Authors: Taylor P. Craig
Published: August 2016

Although there are some significant exceptions, most important glass-forming systems contain elements from the sixth, or chalcogenide, column of the periodic table (oxygen, sulfur, selenium, or tellurium). The glasses which contain oxygen are typically insulators, while those which contain the heavier chalcogen elements are usually semiconductors. Even though oxygen is technically a chalcogen element, the term “chalcogenide glass” is commonly used to denote those largely covalent, semiconducting glasses which contain sulfur, selenium, or tellurium as one of the constituents.

The chalcogenide glasses are called semiconducting glasses because of their electrical properties. The electrical conductivity in these glasses depends exponentially on the temperature with an activation energy which is approximately one half of the optical gap. In this sense these glasses exhibit electrical properties similar to those in intrinsic crystalline semiconductors. The analogy is by no means perfect. The mobilities for the charge carriers in these glasses are very low (< 10 cm2/V-s) compared to crystalline semiconductors, and there are even discrepancies in determining the sign of the charge carriers from measurements of the Hall effect and the Seebeck effect.

The first detailed studies of the chalcogenide glasses were performed about 30 years ago. For many years the prototype compositions have been selenium (Se), arsenic triselenide (As2Se3) or arsenic trisulfide (As2S3), and germanium diselenide (GeSe2) or germanium disulfide (GeS2).
Synchrotron X-Ray Powder Diffraction
Authors: Cox D.E.
Published: August 2016

X-ray powder diffraction is one of the most widely used techniques by scientists engaged in the synthesis, analysis, and characterization of solids. It is estimated that there are now about 25,000 users throughout the world, of which about one third are in the United States. Any single-phase polycrystalline material gives an x-ray pattern which can be regarded as a unique “fingerprint,” and modern automated search-and-match techniques used in conjunction with the Powder Diffraction File (maintained by the International Center for Diffraction Data, Swarthmore, PA) allow routine analysis of samples in minutes. From an x-ray pattern of good quality it is possible to determine unit cell parameters with high accuracy and impurity concentrations of 1-5%, so that powder techniques are extremely valuable in phase equilibrium studies and residual stress measurements, for example. In addition, a detailed analysis of line shapes gives information about physical properties such as the size and shape of the individual crystallites, microscopic strain, and stacking disorder.

In the early days of crystallography many simple (and some not-so-simple) structures were solved from x-ray powder diffraction patterns, but the obvious limitations to the number of individual reflection intensities which can be estimated and the increasing sophistication of single-crystal techniques resulted in a decline in the importance of this application in the 1950s and 1960s.
Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
Authors: Šik J. , Schubert M. , Hofmann T. , Gottschalch V.
Published: August 2016

The infrared-optical properties of GaAs/GaNxAs1−x superlattice (SL) heterostructures (0 < x < 3.3%) are studied by variable angle-of-incidence infrared spectroscopic ellipsometry (IRSE) for wavenumbers from 250 cm−1 to 700 cm−1. The undoped SL structures where grown on top of a 300 nm thick undoped GaAs buffer layer on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). We observe the well-known Berreman-polariton effect within the GaAs LO-phonon region. We further observe a strong polariton-like resonance near the coupled longitudinal-optical plasmon-phonon frequency of the Te-doped substrate at 306 cm−1. For analysis of the IRSE data we employ the harmonic oscillator dielectric function model and the Drude model for free-carrier response. The additional resonance feature is explained by pseudo surface polariton (PSP) interface modes between the Te-doped GaAs and the undoped GaAs buffer layer / SL film. We find that the PSP modes are extremely sensitive to free-carrier properties within the SL structures, and we obtain a strong increase in free-carrier concentration within the GaNAs SL sublayers with increasing x from analysis of the IRSE data. We further observe the localized vibrational modes of nitrogen at 470 cm−1 in the GaNxAs1−x SL sublayers with a polar strength that increases linearly with x, and which can be used to monitor the nitrogen concentration in GaNxAs1−x.
Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
Authors: Bartram Michael E.
Published: August 2016

Bis(cyclopentadienyl)magnesium (MgCp2) is used commonly as a source for doping nitride materials with magnesium. Increased oxygen incorporation known to accompany the use of MgCp2 makes the purity of this precursor an important consideration in nitride CVD. Gas chromatography-mass spectroscopy (GCMS) methods have now been developed for the identification of volatile impurities in MgCp2. Diethylether, an oxygen containing organic compound (CH3CH2OCH2CH3), and additional organic impurities were found in the MgCp2 supplied by three manufacturers. Subsequent refinements in the synthetic processes by these companies have resulted in the availability of MgCp2 free of ether and other organic impurities as determined by GCMS.
Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
Authors: Lorenz K. , Vianden R. , Pearton S.J. , Abernathy Cammy R. , Zavada J.M.
Published: August 2016

The annealing of implantation induced lattice damage in AlN, GaN and InN was studied by means of the perturbed angular correlation (PAC) technique using the PAC probe 181Hf(181Ta). In all three lattices substantial fractions of the probe atoms occupied substitutional lattice sites after annealing. A detailed investigation of the changes observed during isochronal annealing indicates differences in the recovery process. In GaN the trapping of a unique defect, possibly a Nitrogen vacancy, in an intermediate temperature range was found.
UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
Authors: Brown J.D. , Boney J. , Matthews J. , Srinivasan P. , Schetzina J.F. , Nohava Thomas , Yang Wei , Krishnankutty Subash
Published: August 2016

An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal organic vapor phase epitaxy. Double-side polished sapphire wafers serve as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to fabricate the devices. The fully-processed photodiode array was hybridized to a silicon readout integrated circuit (ROIC) using In bump bonds for electrical contact. The UV camera was operated at room temperature at frame rates ranging from 15 to 240 Hz. A variety of UV scenes were successfully recorded with this configuration.
Preparation of stoichiometric GaN(0001)−1×1: an XPS study
Authors: Widstrand S.M. , Magnusson K.O. , Johansson L.S.O. , Moons E. , Gurnett M. , Yeom H.W. , Miki H. , Oshima M.
Published: August 2016

We report on the investigation of GaN(0001)−1×1 using synchrotron radiation x-ray excited photoelectron spectra from the core levels Ga 3p and N 1s, as well as from the contaminants O 1s and C 1s. Measurements were done after outgassing (a) and during three surface treatment methods performed in sequence; (b) ammonia (NH3) flux anneals, (c) Ga deposition with sample held at room temperature followed by vacuum anneal, and (d) Ga deposition on a heated sample followed by Ga desorption during NH3 flux anneal. We have found that the initial NH3 flux anneals increased the amount of present N on the surface and enabled the formation of a well-ordered surface structure, according to the low energy electron diffraction (LEED) pattern. After treatment (b) and (d) the core level spectra of Ga 3p are much improved showing clearly distinct features indicative of increased Ga-N bonding. The Ga to N concentration ratio decreases during the surface treatments from 4.0 to 1.1, hence towards stoichiometry. The amounts of C (and O) present on the surface after outgassing corresponded to 1.1 (0.9) monolayers (ML) but reduced to 0.1 (0.1) ML after the final treatment (d). The Fermi level position in the band gap shifts down by 0.55 eV during the surface treatments, indicating a change of states present in the band gap. We have also found strong support that this Ga-polar sample is initially Ga-terminated.
Development of High Power Green Light Emitting Diode Chips
Authors: Wetzel Christian , Detchprobhm T.
Published: August 2016

The development of high emission power green light emitting diodes chips using GaInN/GaN multi quantum well heterostructures on sapphire substrate in our group is being reviewed. We analyze the electronic bandstructure in highly polarized GaInN/GaN quantum wells to identify the appropriate
device structures. We describe the optimization of the epitaxial growth for highest device performance. Applying several optimization schemes, we find that lateral smoothness and
homogeneity of the active region as characterized by atomic force microscopy is a most telling character of high yield, high output power devices emitting near 525 nm. In un-encapsulated epi-up
mounted (400 μm)2 die we achieve 2.5 mW at 20 mA at 525 nm. We describe die performance, wafer yield, and process stability, and reproducibility for our production-scale implementation of this green LED die process.
Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study
Authors: Shahedipour-Sandvik F. , Jamil M. , Topol K. , Grandusky J. R. , Dunn Kathleen A , Ramer J. , Merai V. N.
Published: August 2016

Observation of GaN-based islands surrounded by V-defects in the barrier layer of green LED is reported for InGaN MQWs deposited under no hydrogen or at growth temperatures of less than 800°C. Nanoscale mechanical properties of the areas enclosed and outside of the ring defects does not show any appreciable variation as measured by UFM. Chemical etching of the MQW structure in addition to cross-sectional TEM analysis ruled out the possibility of growth of inversion domains of N-polar GaN in a Ga-polar GaN matrix.
Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers
Authors: Monroy E. , Calle F. , Muñoz E. , Omnes F. , Beaumont B. , Gibart Pierre , Muñoz J. A. , Cusso F.
Published: August 2016

Schottky barrier photovoltaic detectors based on Si-doped AlxGa1-xN (0 ≤ × ≤ 0.22) have been fabricated and characterized. Samples were grown on basal plane sapphire by LP-MOVPE. Schottky contacts were made with Au. Responsivities are independent of the diode size and of the incident power in the range measured (10mW/m2 to 2KW/m2). The spectral response shows an abrupt cutoff that shifts linearly to higher energy with increasing Al content. A visible rejection of 3 to 4 orders of magnitude is observed in AlxGa1-xN Schottky photodiodes. Device time response is RC-limited, and a minimum decay time as short as 15ns have been estimated in unbiased Al0.22Ga0.28N diodes. This time response can be further reduced by reverse biasing.
Optical Properties of GaNAs Grown by MBE
Authors: Pozina G. , Ivanov I. G. , Monemar B. , Thordson J.V. , Andersson T.G.
Published: August 2016

Optical properties of the GaNxAs1−x layers grown on (001) GaAs substrates by molecular beam epitaxy have been studied. The samples can be classified into three categories with respect to the concentration of N, as determined by x-ray diffraction and secondary-ion mass spectrometry: (i) with doping nitrogen concentration, (ii) with average content of N less than 30 %, and (iii) with x close to 100 %. From optical measurements of photoluminescence and Raman scattering, combined with analysis of x-ray diffraction spectra, different phases are observed in the GaNxAs1−x layers: GaAs, GaN and the solid ternary solution GaNxAs1−x. We have estimated the fundamental band-gap energy in the GaNxAs1−x alloy with low nitrogen concentration (up to x = 0.04) from absorption measurements, and in GaNxAs1−x with low arsenic concentration (up to 1−x = 0.04) - from photoluminescence spectra. An analysis of the dependence of the experimental values of the GaNxAs1−x band-gap energy on the nitrogen composition indicates a constant bowing parameter b as large as b = -18 eV.
Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
Authors: kowiak Pawe ,Ma , Nakwaski W ,odzimierz
Published: August 2016

A detailed threshold analysis of room-temperature pulsed operation of GaN/AlGaN/AlN vertical-cavity surface-emitting lasers (VCSELs) is carried out. The model takes advantage of the latest results concerning gain in active regions, material absorption in the cladding layers, as well as cavity diffraction and scattering losses. The simulation showed that although VCSELs with single (S) or multiple (M) quantum-well (QW) active regions exhibit lower threshold currents, they are much more sensitive to any increase in optical losses than their bulk counterparts. In particular, decreasing the active region radius of gain-guided QW VCSELs below 5 μm (which increases diffraction losses) or increasing dislocation densities (which, in turn, raises scattering losses) gives an enormous rise to their threshold currents. Therefore small-size GaN VCSELs should have an index-guided structure. In the case of MQW VCSELs, the optimal number of quantum wells strongly depends on the reflectivities of resonator mirrors. According to our study, MQW GaN lasers usually require noticeably lower threshold currents compared to SQW lasers. The optimal number of QW active layers is lower in laser structures exhibiting lower optical losses. Although the best result occurred for an active region thickness of 4 nm, threshold currents for the various sizes differ insignificantly.
GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary® Reactors
Authors: Schoen O. , Schmitz D. , Heuken M. , Juergensen Holger , Bremser M. D.
Published: August 2016

Using optimised growth processes for an AIX 2000 HT Planetary® Reactor a high material quality and high potential device yield are demonstrated. Doping levels for GaN single layers from 1·1020 cm−3 free electrons to semi-insulating to 1·1018 cm−3 free holes with state-of-the-art layer resistance uniformities especially for n-type layers are shown. Both AlGaN and GaInN with composition homogeneities of better than 1 nm photoluminescence peak-wavelength standard deviation are displayed. Finally, examination of optically pumped laser action in simple double-hetero structures is quoted to prove the quality of the material.
High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
Authors: Schmitz D. , Beccard R. , Schoen O. , Niebuhr R. , Wachtendorf B. , Juergensen Holger
Published: August 2016

We present results on the growth of Al-Ga-In-N films in multiwafer reactors with 7×2″ wafer capacity. The design of these reactors allows the combination of high efficiency (TMGa efficiency for GaN around 30%) and excellent uniformity. Results on the growth of all materials from the Al-Ga-In-Nitride family are presented in detail. GaN is grown with an excellent optical quality and very good thickness uniformity below 2% across 2″ wafers. The material quality is shown by electron mobility of more than 500 cm2/Vs at an intentional Si-doping of approximately 1×1017 cm−3. Controlled acceptor doping with Mg yields carrier concentrations between 5×1016 and 1018 cm−3. The layer thickness uniformity of the films are better than 2% over a 2″ wafer area. GaInN is grown with PL emission wavelengths in the visible blue region showing a uniformity better than 1.5 nm standard deviation. The film thickness uniformity represents the same figures as obtained for the binary. The compositional uniformity of AlGaN is in the sub 1% range corresponding to a wavelength variation below 1 nm.

The fabrication of heterostructures from these binary and ternary materials is described as well as results from the characterization of these structures. The results show that reliable and efficient production of Al-Ga-In-Nitride based optoelectronic devices can be performed in multiwafer reactors.
Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
Authors: Monroy E. , Garrido J. A. , Muñoz E. , Izpura I. , Sánchez F. J. , Sánchez-García M. A. , Calleja E. , Beaumont B. , Gibart Pierre
Published: August 2016

In this work high gain GaN photoconductive UV detectors have been fabricated and characterized, and a novel gain mechanism, dominant in these detectors, is described. DC responsivities higher than 103A/W have been measured for an incident power of lW/m2 at room temperature. The photoconductive gain depends directly on the bias voltage and scales with incident power as P−k (k ≈ 0.9) for more than five decades. A decrease of both gain and k parameter with temperature has also been observed. As a consequence of the slow non-exponential transient response, AC gain measurements result in lower values for gain and k parameter, which are frequency dependent. The high responsivity, non-linear behavior and slow non-exponential transient response, are all modeled taking into account a modulation mechanism of the layer conductive volume. Such spatial modulation is due to the photovoltaic response of the potential barriers related to the surface and charged dislocations arrays.
A Perspective on the GaN Injection Laser
Authors: Pankove J. I.
Published: August 2016

This short paper is a brief review of the problems to be overcome for making an injection laser using a new semiconductor that promises to revolutionize the information storage industry.
Evidence of 2D-3D transition during the first stages of GaN growth on AlN
Authors: Widmann F. , Daudin B. , Feuillet G. , Samson Y. , Arlery M. , Rouviere J. L.
Published: August 2016

In order to identify the strain relaxation mechanism, Molecular Beam Epitaxy of wurtzite GaN on AlN was monitored in situ using Reflection High Energy Electron Diffraction (RHEED). In the substrate temperature range between 620°C and 720°C, a Stransky-Krastanov (SK) transition was evidenced, resulting in a 2D-3D transition after completion of 2 monolayers, with subsequent coalescence of 3D islands, eventually resulting in a smooth surface. Quantitative analysis of the RHEED pattern allowed us to determine that island formation is associated with elastic relaxation. After island coalescence, a progressive plastic relaxation is observed. The size and density of 3D islands was varied as a function of the growth parameters. AFM experiments revealed that the size of the GaN islands, about 8 nm large and 2 nm high, was small enough to expect quantum effects. It was found that capping of the islands by AlN resulted in a smooth surface after deposition of a few monolayers allowing us to grow a »superlattice» of islands by periodically repeating the process.
Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
Authors: Kamp Markus , Mayer M. , Pelzmann A. , Ebeling K. J.
Published: August 2016

Ammonia is investigated as nitrogen precursor for molecular beam epitaxy of group III nitrides. With the particular on-surface cracking approach, NH3 is dissociated directly on the growing surface. By this technique, molecular beam epitaxy becomes a serious competitor to metal organic vapor phase epitaxy. Thermodynamic calculations as well as experimental results reveal insights into the growth mechanisms and its differences to the conventional plasma approach. With this knowledge, homoepitaxially GaN can be grown with record linewidths of 0.5 meV in photoluminescence (4 K). GaN layers on c-plane sapphire also reveal reasonable material properties (photoluminescence linewidth 5 meV, n ≈ 1017 cm−3, μ ≈ 220 cm2/Vs). Beside GaN growth, p- and n-doping of GaN as well as the growth of ternary nitrides are discussed. Using the presented ammonia approach UV-LEDs emitting at 370 nm with linewidths as narrow as 12 nm have been achieved.
Raman characterization of the optical phonons in AlxGa1−xN layers grown by MBE and MOCVD
Authors: Cros A. , Angerer H. , Handschuh R. , Ambacher O. , Stutzmann M.
Published: August 2016

We present the results of Raman measurements performed on AlxGa1−xN layers grown by MBE and MOCVD. The films were deposited on (0001) c-sapphire substrates, and the aluminum content covered the whole composition range for x from 0 (GaN) to 1 (AlN). It is shown that the energies of both A1(TO) and A1(LO) phonon modes smoothly increase with increasing x, indicating a one-mode behavior. The E2 phonon mode, however, presents a different behavior. Its energy increases very slowly with aluminum content and, for x≈0.4, a new phonon mode shows up which is shifted to higher energies by 50 cm−1. This new line leads to the E2 AlN mode for increasing aluminum content. The linewidths and intensities of these modes strongly depend on composition. These results are compared with recent theoretical calculations. Finally, the Raman selection rules in the MBE and MOCVD samples are compared and conclusions about the quality of the layers are drawn.
Recent Results in the Crystal Growth of GaN at High N2 Pressure
Authors: Grzegory I. , Bockowski M. , Lucznik B. , Krukowski S. , Wroblewski M. , Porowski S.
Published: August 2016

We present recent results on bulk GaN crystallization. The best quality GaN crystals grown from the solution at high N2 pressure without an intentional seeding are single crystalline platelets of stable morphology reaching dimensions up to 10 mm. The fastest growth direction for such crystals is [1 0 0], perpendicular to the GaN c-axis. The maximum stable growth rate perpendicular to crystal c-axis is determined from the experiment and used for an estimate of the effective supersaturation for the {10 0} face assuming two dimensional layer growth. The heat of GaN disssolution, determined from experimental solubility data, is used for the estimation of the edge energy of 2-D nuclei on the growing {10 0} face. Bulk crystal growth seeded by a single hexagonal needle with well developed {10 0} faces is also reported. The crystallization mechanisms and morphological stability in seeded growth of GaN are discussed on the basis of experimental results. The physical properties of the GaN crystals and homoepitaxial layers grown on them are briefly reviewed.
The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
Authors: Thompson Alan G. , Schurman M. , Feng Z. C. , Karlicek R. F. , Salagaj T. , Tran C. A. , Stall R. A.
Published: August 2016

In the past year, several organizations have fabricated reliable, high-brightness LEDs from III-Nitride materials that emit in the blue and green. Recently, Nichia in Japan have announced lasing action in GaN-based diodes. Quantum well structures are key to all these results, offering higher brightness, narrower EL linewidths, and a wider spectral range. In order for the III-Nitride technology to develop, the material growth technique must offer high volume at low cost in addition to the requisite device performance. To date, only MOVPE has demonstrated this capability. We have previously reported the growth of GaN, InGaN, and AlGaN layers by MOVPE in a multi-wafer, high-speed rotating disk reactor. Both n- and p-doping and high quality optical properties have been achieved. In this paper we extend this earlier work and present results of the performance of InGaN / (Al)GaN quantum well structures. Intense PL spectra were observed in the violet and blue regions. The thinnest wells show evidence from PL and DCXRD measurments of either discontinuous layers (islands) or a diffuse upper interface, with preliminary TEM results showing the latter to be the most likely. We also report excellent uniformity of these quantum well structures, and show electroluminescence from a SQW diode emitting at 473 nm.
MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
Authors: Jürgensen H. , Schmitz D. , Strauch G. , Woelk E. , Dauelsberg M. , Kadinski L. , Makarov Yu.N.
Published: August 2016

For the growth of an electrically pumped lasing nitride emitter, the development of the MOCVD equipment and the process are mutually dependent. Most important is the implementation of the rapid temperature changes that are required between the growth of the different layers of a device structure. Equally important is to provide a reaction chamber that develops a stable gas phase at all growth temperatures used in the process. In this paper we will give insight in the technology and the relationship between processes and equipment. The development of the reation chamber was supported by mathematical modeling that formed the basis for the selection of appropriate process parameters for growth of group-III nitrides. The modeling consists of the numerical solution of the Navier-Stokes equations coupled with heat transfer and mass transport of the chemical species. The modeling of radiative heat transfer takes into account the effect of changing surface radiative properties. These changes result from the coating of the reactor inner surfaces during the growth run. Coupled flow dynamics and chemistry including homogeneous and heterogeneous reactions play an important role for predicting growth rate distributions on the susceptor area. At the practically used high temperatures, group-III metalorganics turn out to be almost entirely decomposed and it is the mass transport of these decomposition products to the growing layer that is assumed to control the growth rate in accordance with experimental observations.

AIXTRON GmbH
Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
Authors: Rouviere J. L. , Arlery M. , Niebuhr R. , Bachem K. H. , Briot Olivier
Published: August 2016

GaN layers deposited by MOCVD on sapphire have been characterized by Transmission Electron Microscopy (TEM). Two substrate orientations were used, (0 0 0 1) and(2 0).We determine the crystallographic structures (defect content and layer polarity) of three different types of GaN layers with different surface morphologies. Convergent Beam Electron Diffraction studies were particularly important to determine the polarity of the GaN layers. We find that polarity and surface diffusion are the factors that control the different growth modes. Unipolarity is obtained thanks to the annealing of the low temperature buffer layer or/and thanks to the nitridation of the sapphire substrate.

Hexagonal pyramids and flat tops are formed when the material has a dominant N-polarity. The pyramids contain many tiny hexagonal columnar Inversion Domains (IDs). These pyramids are formed when the tiny Ga-polar IDs grow faster than the surrounding N-polar matrix. Flat GaN layers are unipolar, with a Ga polarity. Rough grainy layers which are unipolar (Ga-polarity) are obtained when surface diffusion is not high enough.
Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
Authors: Seo Im Jin , Härle Volker , Scholz Ferdinand , Hangleiter Andreas
Published: August 2016

We have studied GaInN/GaN quantum well structures grown by LP-MOVPE by picosecond time-resolved photoluminescence spectroscopy. For the quantum wells we find rather long PL decay times of up to 600 ps at low temperature. At temperatures higher than about 100 K, the decay time decreases rapidly, reaching about 75 ps at room temperature. From measurements of the integrated PL intensity, we conclude that this decrease of the decay time is due to nonradiative recombination processes. By combining our data for the lifetime and the intensity, we derive the radiative lifetime, which is constant at low temperature and increases at elevated temperatures. We explain this behavior on the basis of the interface roughness at low temperature and thermal dissociation of excitons at higher temperatures.
Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
Authors: Piner E. L. , McIntosh F. G. , Roberts J. C. , Aumer M. E. , Joshkin V. A. , Bedair S. M. , El-Masry N. A.
Published: August 2016

High quality InGaN films have led to the development of LEDs and blue lasers. The quaternary AlInGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report on such films grown on (0001) sapphire substrates in an atmospheric pressure MOCVD reactor at 750-800°C. The ternary films have a composition of up to 40% InN and the quaternary films were grown in the composition range of 0 to 20% AlN and 0 to 20% InN. The quaternary compositions studied by EDS and the lattice constants from double crystal XRD followed Vegard's law indicating solid solubility for the range studied. Room temperature PL is dominated by band edge emission for InGaN and AlInGaN, at low AlN%. Higher AlN alloys of AlInGaN had PL dominated by deep levels. AlInGaN/InGaN and AlGaN/InGaN heterostructures were grown with abrupt interfaces. We emphasize the most important growth parameters for the growth of high quality ternary and quaternary thin films. The structural, electrical and optical properties of these In-based ternary and quaternary films and their lattice matched and strained heterostructures will also be presented.
Cleidocranial Dysplasia with 6p21.1-p12.3 Microdeletion
Authors: Puvabanditsin Surasak , February Melissa , Mayne Julia , McConnell Jennifer , Mehta Rajeev
Published: August 2016

Objective:

The aim of this article is to publish a literature review and report on a new case of cleidocranial dysplasia syndrome with 6p21.1-p12.3 microdeletion.

Design:

A PubMed search using “cleidocranial dysplasia syndrome (CCD)” or “6p microdeletion” was performed. Articles with information relevant to our case were obtained for review. A new case of cleidocranial dysplasia syndrome is presented to describe and discuss clinical manifestations, pathogenesis, clinical progression of cleidocranial dysplasia syndrome, and management.

Results:

There were 22 articles with reports of cleidocranial dysplasia syndrome or 6p microdeletion. Cleidocranial dysplasia syndrome, a rare genetic disorder, documented to have an autosomal dominant inheritance pattern and caused by caused by mutations of the transcription factor RUNX2. RUNX2 has been mapped to chromosome 6p21. The anomalies in cleidocranial dysplasia syndrome can involve not only the clavicle and skull but the entire skeleton because the membranous as well as endochondral bone formation may be affected. Upon follow-up, our patient was found to have global developmental delay.

Conclusions:

We report a near-term neonate with characteristic features of cleidocranial dysplasia and a 6p21.1-p12.3 microdeletion. Cleidocranial dysplasia syndrome is a rare autosomal dominant skeletal dysplasia. The mutation of the RUNX2 gene results in cleidocranial dysplasia syndrome.
Influence of Soil Moisture Stress on Vegetative Growth and Mycorrhizal Colonization in Hound’s-tongue (Cynoglossum officinale)
Authors: Momayyezi Mina , Upadhyaya Mahesh K.
Published: August 2016

Hound’s-tongue is an invasive, biennial weed that thrives in dry rangelands of British Columbia. Rosette formation in the first year of growth and a deep root system offer this weed a competitive advantage against associated grasses under dry conditions. To study effects of water stress on seedling growth and mycorrhizal colonization in hound’s-tongue, seedlings of this weed were grown in pots in a greenhouse and subjected to four (100, 80, 60, and 40% of field capacity) soil moisture treatments. Effects of soil moisture stress (SMS) on several growth parameters as well as mycorrhizal colonization of roots were studied. The total biomass, shoot and root fresh and dry weights, leaf number, petiole length, leaf area, and specific leaf weight (leaf dry weight per unit leaf area) decreased with increasing SMS; shoot and root water content was not affected. Because of a greater effect of SMS on root compared with the shoot biomass, shoot:root ratio increased as the moisture stress increased. Water stress decreased mycorrhizal colonization and arbuscule and vesicle abundance. A reduction in total biomass, leaf number and leaf area per plant, petiole length, and mycorrhizal colonization may reduce the competitive advantage of hound’s-tongue over its neighbors under drought conditions. The effect on plant size may also influence herbivory, by biocontrol agents and other herbivores, and fecundity of this weed.
Physical and hydraulic response of geomembrane wrinkles underlying saturated fine tailings
Authors: Joshi P. , Rowe R. K. , Brachman R. W. I.
Published: August 2016

The effect of applied pressure on the deformation of a prescribed wrinkle, with and without a hole, in four different geomembranes (1 and 2 mm thick high density polyethylene (HDPE) and 1 and 2 mm thick linear low-density polyethylene (LLDPE)), placed on a compacted silty-sand underliner and backfilled with saturated fine tailings at 65% solids content, is investigated. For the 1 mm thick geomembranes without holes, the gap beneath the wrinkle was eliminated (but the geomembrane was excessively strained) at an applied total stress of 250 kPa, whereas for the 2 mm thick geomembranes the gap remained even under a total stress of 1000 kPa. The short-term performance was the same for both LLDPE and HDPE. For wrinkles with a hole, any gap that remained beneath the wrinkle was completely filled by tailings. The tailings migrated into the gap beneath the wrinkle partly as free-flowing slurry and partly under the applied hydraulic gradient. There was a difference in the shape of the final wrinkle depending on whether the hole in the wrinkle was present before or after backfilling with tailings. However, the same leakage was measured through a 10 mm diameter hole in both cases. With an increase in applied vertical stress, the leakage decreased.