bluuebunny/crossref_metadata_2025 huggingface dataset:
Local Memory Policy. The Case of Wałbrzych
Authors: Sęczyk Waldemar
Published: December 2020

Until 1989 Wałbrzych was an important industrial center of Lower Silesia. The system transformation which started in 1989 led to the liquidation of enterprises in the mining, ceramics and textile industries. The city began to be perceived in Poland as a city of high unemployment, illegal shallow coal mines or political corruption.

The city authorities began to wonder what events from the past could be helpful in creating its new image. They undertook a number of activities in this regard. The questionnaire was to assess the effectiveness of the city’s activities. It was carried out among secondary school students, students and the employees of Wałbrzych city institutions, teachers of Wałbrzych schools and councilors of the City Council. The survey was conducted in October and November 2019. The respondents indicated mainly the activities of the authorities aimed at personalizing local historical policy. The city authorities undertook a number of other initiatives in the field of local remembrance policy. The surveys showed that the initiatives were not known to the inhabitants of Wałbrzych. In the minds of respondents, there were only two historical events, namely May 3 and November 11. To a small extent, they participated in historical ceremonies present in national historical politics (e.g. the Day of the Cursed Soldiers). Apart from the figure of Princess Daisy, most respondents were unable to identify other people important to the region. Although there are a number of organizations and associations in the city, only the Princess Daisy Foundation conducted the eff ective and visible activities in the field of local remembrance policy. Although the respondents declared their interest in history, their knowledge at the local level is low.
O ENCARCERAMENTO DOS LGBT FRENTE À DUPLA PENALIZAÇÃO
Authors: Cinque Helena , Dorigon Alessandro
Published: December 2020

O presente trabalho visa a demonstrar a necessidade de observar as identidades de gênero dentro do sistema carcerário brasileiro, criando, assim, um espaço de convivência específico para os apenados LGBT (lésbicas, gays, bissexuais e transexuais). A atual ótica binária, dentro da qual os detentos são distribuídos de acordo com o seu sexo biológico, mostra o despreparo do Estado em acolher a população LGBT encarcerada, gerando, assim, uma dupla penalização. Além de ter cerceada a sua liberdade, eles perdem a dignidade, integridade física, psíquica e moral, haja vista as atrocidades cometidas pelos outros apenados. Porquanto, a discussão não está sobre a imposição de pena ao criminoso LGBT, mas sim se os estabelecimentos prisionais brasileiros propiciam para estes uma condição digna de permanência. Vale lembrar que a Lei nº 7.210 (Lei de Execução Penal) contém garantias à população encarcerada, assegurando, dentre outros direitos, a integridade física, moral e o tratamento humanizado, porém, diante das atrocidades sofridas dentro do cárcere, o Conselho Nacional de Política Criminal e Penitenciária e o Conselho Nacional de Combate à Discriminação publicaram a Resolução Conjunta nº 1, de 2014, com o objetivo de estabelecer parâmetros de acolhimento ao LGBT apenado, observando, entre outras preocupações, a necessidade da criação de espaços específicos de convivência, entretanto, tal documento não possui poder coercitivo. Assim, tendo em vista o Princípio da Isonomia, é de suma importância a criação de espaços específicos para os apenados LGBT, bem como observar a falta de legislação própria para a problemática. Logo, há a necessidade de mudança da ótica binária desse sistema carcerário brasileiro arcaico para acolher as identidades de gênero e afastar, assim, a dupla penalização.
Aggressive vertebral hemangiomas in asymptomatic patients: A review
Authors: Santos Rayan Haquim Pinheiro , França Caio Nuto Leite , Guimarães Victor Dinelli , Prigenzi Cezar Kabbach Calaça , Fontoura Emilio Afonso França , Botelho Ricardo Vieira
Published: December 2020

Background:

Hemangioma is the most common benign tumor of the spine. Most patients are asymptomatic, but some lesions can become aggressive, leading to spinal compression. Here, we reviewed the natural history and treatment of aggressive hemangiomas in asymptomatic patients.

Methods:

An electronic review of the literature was performed regarding the diagnosis/treatment modalities for asymptomatic aggressive hemangiomas of the spine utilizing the Medline (PubMed) and Google Scholar databases.

Results:

We selected four articles describing the diagnosis/management of four cases of aggressive, asymptomatic hemangiomas in patients averaging 11.25 ± 2.36 years of age. Three of the four patients were females, and all were followed an average of 36.5 ± 25 months. Notably, two of four patients required emergency surgery.

Conclusion:

There is a paucity of the literature regarding the diagnosis and optimal therapeutic management of aggressive hemangiomas in asymptomatic patients, half of whom may present with acute neurological deterioration warranting emergency surgery.
Simulation of Transient Flow in Gas Pipelines Using the Finite Volume Method
Authors: Quintela Pedro , Pérez Parra Jean Carlos , Useche Castro Lelly , Lapo Palacios Miguel
Published: December 2020

The transient flow analysis is fundamental to the simulation of natural gas process, in order to adjust the system to real operative conditions and to obtain the highest level of efficiency, compliance and reliability. The simulation of natural gas pipelines and networks requires mathematical models that describe flow properties. Some models that have been developed year after year based on the laws of fluid mechanics that govern this process, interpreted as a system of equations difficult to solve. This investigation describes the fully implicit finite volume method for natural gas pipeline flow calculation under isothermal conditions and transient regime. The simplification, discretization scheme and implementation equations are approached throughout this paper. The model was subjected to two evaluations: sinusoidal variation of the mass flow and opening-closing valve at the outlet of the pipeline, it is compared with two models: fully implicit finite difference method and method of characteristics. This method proved to be efficient in the simulations of slow and fast transients, coinciding the flow oscillations with the natural frequency of natural gas pipeline.
ROLE OF THE QUALIFICATION OF JUDGES IN ENSURING THE AUTHORITY OF THE JUDICIAL POWER
Authors: Туманова Лидия Владимировна
Published: December 2020

Статья посвящена вопросам формирования судейского корпуса и полномочиям квалификационных коллегий судей. Авторитет судебной власти обеспечивается личностью каждого судьи, поэтому так важен конкурсный отбор на судейские должности. Принцип независимости не означает отсутствие ответственности.

The article is devoted to the formation of the judiciary and the powers of the qualification collegiums of judges. The authority of the judiciary is ensured by the personality of each judge, which is why competitive selection for judicial positions is so important. The principle of independence does not mean lack of responsibility.
Gestão Escolar e as Novas Incumbências Impostas pela Lei Federal Nº 13.663/18
Authors: Hammes Lúcio Jorge , Sebaje Alexandre Zacaria
Published: December 2020

A presente pesquisa, centrada teoricamente na área da Educação, compreende uma investigação de abordagem qualitativa, cujo escopo abrange questões pertinentes a Lei Federal nº 13.663/18 que acrescentou os incisos IX e X ao Art. 12 da Lei de Diretrizes e Bases da Educação (BRASIL, 2018). Tais incisos obrigam os envolvidos no processo de ensino e aprendizagem a promoverem medidas de conscientização, de prevenção e de combate a todos os tipos de violência, bem como estabelecerem ações destinadas à promoção da cultura de paz no âmbito escolar. A pesquisa tem como objetivo contribuir para o debate e a percepção dos gestores escolares no que se refere às novas incumbências impostas pela lei em questão. O lócus da investigação é uma escola de Ensino Médio de Pelotas pertencente à Rede Pública Estadual de Ensino do Estado do Rio Grande do Sul. O corpus analítico emerge de dados obtidos por meio de dois questionários com perguntas abertas, destacando-se a análise de conteúdo como método precípuo de tratamento dos dados.. Os resultados obtidos indicam a necessidade de qualificar os gestores em educação para que possam, assim, colocar efetivamente em prática as novas disposições. Sugere-se, assim, a inclusão de cursos de formação e capacitação de gestores, a fim de inspirar novas e potentes discussões e construções de saberes acerca das novas diretrizes.
Professor sem Fronteiras: trabalhando o lúdico na Educação Infantil a partir de múltiplas linguagens de sentido
Authors: Oliveira Liliane Afonso de , Silva Maria do Perpétuo Socorro Cardoso da , Campelo Wanubya do Nascimento Moraes , Cardoso Cíntia Maria
Published: December 2020

As múltiplas linguagens trabalhadas através do lúdico na educação infantil fortalecem o processo de desenvolvimento da aprendizagem da criança, no qual, cria e passa a usar seu imaginário para organizar os espaços sociais nos quais está inserida. Com o objetivo de ampliar reflexões sobre múltiplas linguagens podem ser trabalhadas no contexto da educação infantil, este estudo ancora-se à discussão de que o professor da educação infantil precisa repensar suas práticas com o apoio do lúdico. Caracteriza-se como um estudo exploratório, de aportes teóricos relacionados ao lúdico como subsídio essencial para o desenvolvimento infantil. A partir de conclusões preliminares admite-se que é um tema de extrema importância, pois, as múltiplas linguagens desenvolvidas no ambiente escolar reverberam ações pertinentes ao reconhecimento e desenvolvimento cognitivo da criança.
STUDI KUALITATIF WAJIB PAJAK ORANG PRIBADI PENGUSAHA TERTENTU DALAM MELAKUKAN PEMBAYARAN PAJAK PENGHASILAN (Studi Kasus Pada Pelaku Social Commerce)
Authors: Aryani R. Ayu Ida
Published: December 2020

Tujuan penelitian ini adalah untuk mengetahui kondisi pengetahuan pelaku social commerce sebagai wajib pajak pengusaha tertentu dalam membayar pajak penghasilan atas usahanya.  Penentuan perilaku agen social commerce ketika dihadapkan pada tantangan membayar pajak penghasilan, dan bagaimana kendala yang dihadapi oleh petugas pajak atas transaksi social commerce pengumpulan pajak. Penelitian ini merupakan penelitian kualitatif yang dilakukan dengan mewawancarai para pelaku perdagangan social. Hasil wawancara menunjukkan bahwa faktor utama pelaku social commerce tidak membayar pajak penghasilan adalah kurangnya informasi jika mereka wajib pajak dan diharuskan membayar pajak atas penghasilan yang diterima. Mereka perlu memiliki kriteria yang jelas tentang perpajakan perdagangan social, jangka waktu pembayaran, dan kepastian bahwa mereka tidak dirugikan. Berbagai kendala yang dihadapi KPP untuk keperluan perpajakan juga terjadi transaksi social commerce, seperti kesulitan melacak siapa yang bertransaksi social commerce, kesulitan menentukan objek pajak (hingga formal digital), transaksi tidak hanya di wilayah pabean Indonesia.
Analisa Penjualan Sepeda Motor PT. Graha Auto Pratama Menggunakan Metode Least Square
Authors: Rosita Ela
Published: December 2020

This journal was created to conduct case study research of PT. GRAHA AUTO PRATAMA motorcycle sales to predict the number of motorcycle sales in the coming period. In this study using the least square method which aims to forecast by determining the trend equation from the data using the data using the application MS.Excel and SPSS
Krisis Demokrasi dan Tirani Meritokrasi Menurut Michael Sandel
Authors: Madung Otto Gusti
Published: December 2020

This article aims to introduce the basic thesis of Michael Sandel as described in the book the Tyranny of Merit about the link between the contemporary crisis of democracy and meritocracy. The crisis of democracy today is shown through the increasing wave of right-wing populism in some democratic countries in Europe and the USA. According to Michael Sandel, the crisis of democracy is caused by the policy of meritocracy launched by the liberal democracy that has marginalized the groups of the middle class and working class. Furthermore, the article argues that populist leaders such as Donald Trump succeed in capitalizing on the grievances and frustration of social groups and expressing them as a political agenda. Based on the communitarianism of Michael Sandel, this article offers a solution to strengthen the role of social solidarity and community to cope with individualism and the crisis of liberal democracy.

Key words: Crisis of democracy, meritocracy, liberalism, communitaranism, Michael Sandel.
Focused Ion Beam Assisted Circuit Debug of a Video Graphics Chip
Authors: Fischer L.S. , Herschbein S.B.
Published: December 2020

Microchip circuit simulation modeling cannot always duplicate all of the independent variables found in a system level application. Sometimes, monitoring the logic states at multiple internal nodes when operating in the native environment is the only way of debugging a subtle design error. In this situation, Focused Ion Beam (FIB) technology was used to provide microprobe access points to deeply buried nets, allowing levels of real-time mapping not available by any other method. Data extraction was accomplished by probing the socketed chip on a rigidly mounted AT bus video card. The driver was a fully disassembled personal computer running a graphics intensive program. The close collaboration between failure analyst, applications engineering and the chip designers made this a truly unique experience.
A User-Friendly System for Fluorescent Microthermal Imaging and Light Emission Microscopy
Authors: Glacet J-Y. , Berne S.
Published: December 2020

The Fluorescent Microthermal Imaging (FMI) technique was developed as a new failure analysis tool for hot spot and leakage site localization in order to complement the Liquid Crystal and Light Emission Microscopy techniques. The goal of this work was to produce a user-friendly and automated FMI system which is simple to use by the laboratory personnel. The instrumentation was set up on a probe station. It involved a uv light source, a dark box, a motorized optical microscope, a slow scan cooled CCD camera, a temperature controller, electrical test equipment, and a PowerMacintosh computer with IPLab software for instrumentation control, image acquisition and image processing. Software extensions for IPLab were developed with Think C to add automated functions to the system using the GPIB-IEEE 488 bus. IPLab scripts were written to fully automate instrumentation control, image acquisition and processing. A study of EuTTA compound fluorescence intensity variation with temperature, exposure time, and uv excitation was performed in order to characterize the system. The FMI technique was then applied to hot spot identification on microelectronic devices and failure analysis. With a few simple modifications, the same system was also employed for Light Emission Microscopy.
FLOSPAT: Fault Localization by Sensitized Path Transformation
Authors: Heath M.W. , Maly W.
Published: December 2020

This paper describes a fault identification algorithm for combinational and full-scan sequential circuits called FLOSPAT - Fault Localization by Sensitized Path Transformation [1,2]. The goal of fault identification is to localize a fault to the fewest possible gates and to determine the Boolean functions realized by those gates. Instead of choosing a fault model, FLOSPAT uses fault-independent sensitized path tracing [3] to localize functional deviations. Sensitized path transformation is used to adaptively generate test vectors which improve the diagnostic resolution. The output of FLOSPAT is used for physical defect diagnosis by cross-referencing gate-level defect dictionaries generated by the contamination-defect-fault mapper CODEF [4,5,6].
A Study of Measurement Methods for Detecting Voiding and Delamination of Die Attach Materials in Power Semiconductor Devices
Authors: Smith L. , Kalkur T.S.
Published: December 2020

There are three basic methods used to detect voiding and delamination of die attach materials in semiconductor devices. (1)Electrical measurement of a temperature sensitive parameter (e.g. Vbe, Vgs) under pulsed power conditions is preferred by manufacturers because the data is easily and quickly obtainable during final electrical test; but electrical measurements are only sensitive to gross voiding or delamination. (2)X-ray analysis produces images which are generally accepted as proof of voiding; but X-ray is completely insensitive to delamination or degradation from thermal stress. (3)Use of Scanning Acoustic Microscopy (SAM) as a non-intrusive analysis tool is increasing in the semiconductor industry and provides accurate evidence of delamination in cases where the other two methods fail. The use of all three methods is recommended to maintain a reliable power product fabrication line at its peak of quality with respect to die attach coverage. This paper will compare and contrast the three methods during thermal shock stress in two manufacturer's power Insulated Gate Bipolar Transistor (IGBT) using a lead-tin solder die attach material.
Signature Analysis of Package Delamination Using Scanning Acoustic Microscope
Authors: Li S.X. , Lee K. , Hulog J. , Gannamani R. , Yin S.
Published: December 2020

Package delaminations are often associated with electrical and package reliability problems in IC devices. Delaminations caused by electrical-over-stress (EOS) and moisture expansion during reflow soldering have shown different delamination patterns. A Scanning Acoustic Microscope (SAM) can be used to detect package delaminations. Understanding these delamination signatures can help us quickly identify the failure cause at an early stage of the failure analysis.
Interconnect Failure Dependence on Crystallographic Structure
Authors: Field D.P. , Nucci J.A. , Keller R.R.
Published: December 2020

A wealth of literature has arisen in the past couple of decades regarding the phenomenon of electromigration. In addition, stress voiding has received considerable attention from the research community. Some of the work on the structural character of these phenomena has focussed on the roles of crystallographic texture and grain boundary structure. It is an experimental fact that the strength of the (111) fiber texture is an indication of interconnect reliability, the stronger the texture, the more reliable the interconnect. It is also presumed that grain boundary diffusivity is a controlling factor in electromigration behavior of polycrystalline lines. Undesirable grain boundary structure is likely a cause of failure in lines with a bamboo structure as well because they are often sites of stress concentration and local incompatibilities. The present study focuses upon electromigration failures in test structures of Al-Cu lines and stress voiding in Cu lines. Texture and grain boundary structure were measured directly on the specimens using electron back-scatter diffraction and orientation imaging. It is observed that a correlation exists between grain boundary structure and void formation in strongly textured polycrystalline lines. Results indicate that secondary orientation (not just the (111) fiber), and boundary structure may be of primary importance in optimizing interconnect microstructure.
Microthermal Imaging Based on the Transmission Change of a Thermochromic Dye Film
Authors: Ban Hiroshi , Komine Yukio , Takeda Tadao , Nakamura Shinji
Published: December 2020

We have developed a sensitive method for detecting hot spots in LSIs, which is called Dye Thermochromism Imaging (DTI). A key is a thermochromic dye film based on a leuco-dye/acid/modulator/polymer system. The blue color of this film reversibly fades at temperatures near room temperature: its transmittance at 610 nm changes at a logarithmic slope of 0.35/°C. A differential local brightness increase in the image indicates a hot spot when an LSI is biased with a supply voltage. We observed a hot spot in a low power SRAM at supply voltages between 0.9 and 2 V and power dissipations between 0.072 and 1 mW using a 10-bit/12-bit dual mode CCD. Comparing DTI with fluorescent microthermal imaging (FMI), we found that DTI has several advantages with regard to temperature sensitivity, reproducibility in repeated measurements, instrumental setup, and speed of measuring.
Embedded SRAM Bitmapping and Failure Analysis for Manufacturing Yield Improvement
Authors: Glacet Jean-Yves , Lee Fourmun
Published: December 2020

SRAM bitmapping and failure analysis have been used as a driver for continuous yield improvement during pre-qualification manufacturing of a microcontroller. The combination of the embedded SRAM electrical failure data and failure analysis results was used to generate a pareto of failure modes and failure mechanisms and establish a correlation between the two. Bitmap trend charts can be used as a manufacturing line monitoring tool to supplement traditional in-line inspection. Identification of manufacturing issues can be obtained from bit failure information and compared with in-line inspection results to quickly identify which specific process module is responsible for a significant yield loss.
Overcoming Environmentally Induced Probe Drift for Sub-300nm Fault Isolation
Authors: Waggoner Clint A.
Published: December 2020

This paper defines environmentally induced probe drift and elaborates on the problems and challenges associated with it as they relate to physical sub-micron fault isolation systems. Vibration, acoustical, and thermal disturbances are discussed. Probing hardware that can be affected by environmental conditions will be summarized. A comparison of the different approaches is presented with the “pros” and “cons” of each approach summarized. Optimal methods of managing probe drift are presented to give the reader a complete understanding of how environmentally induced probe drift may impact their own physical sub-micron fault isolation. Examples, images, and device data are presented when appropriate.
Design and Process Related Failure Detection With Reliability Testing Incorporating Varying Power Sequencing and Slew Rate
Authors: Kadathur Srinivasan R. , Spencer Dennis , Walker Andrew
Published: December 2020

The fact that most components on prototype motherboards are likely to be from the same, or nearly the same manufacturing lot, and hence do not show the same variation that may be seen between lots during mass production, magnifies the deficiencies in the design and test process with respect to design robustness against process and manufacturing variability. This article details the need for and the use of Slew Rate Control and Rail Ordering Control in conjunction with the use of the temperature and voltage testing beyond specification to ensure product robustness and detect design weakness. It is important to have the ability to test functionality at all bounds of the specification, including any gray areas, to reduce field failures. The test proposed in the article helps address this problem, saving valuable design and debug time and preventing potential future issues when leveraging the circuit on platforms with different power sequencing.
Complementary EBIC and SEM Analysis of ESD Induced Failures in PIN Photodiodes
Authors: Helfand Martin A. , Owens Mark , Chokshi Nehal
Published: December 2020

Solid-state semiconductor devices such as III-V based photodiodes can suffer damage from electro-static discharge (ESD) events. Electron beam induced current (EBIC) imaging techniques have been used successfully to characterize a wide range of failure modes in many different material systems. This article proposes a technique of superimposing the EBIC image with the secondary electron image which permits the correlation of the recombination center with defects and is a powerful tool to assist in the understanding of the root cause for failure. Further complementing the EBIC and SEM analysis with optical microscopy, DC and AC electrical characterization enhances the understanding of the location, nature and mode of failure. The creation of these defects is very localized and commonly occurs at pre-existing defect sites or along the periphery of the metal guard ring. This is characteristic of ESD-induced failure along with the localized heating and evaporation of material.
Study of MFM Application in Semiconductor Failure Analysis
Authors: Chen Way-Jam , Shiau Lily , Huang Ming-Ching , Chao Chia-Hsing
Published: December 2020

In this study we have investigated the magnetic field associated with a current flowing in a circuit using Magnetic Force Microscopy (MFM). The technique is able to identify the magnetic field associated with a current flow and has potential for failure analysis.
Study of Porous Organic Ultra Low K Materials After Treatment With Various Etching and Cleaning Plasma
Authors: Lu Dong , Lim Vanissa , Ramana Murthy B. , Kumar Rakesh , An Yan Du , Trigg Alastair D. , Yang Ping
Published: December 2020

In the selection of ultra low k materials, process compatibility is a very important factor. Plasma processing plays a critical role in enhanced interconnect integration. It is therefore important to study plasma interaction with the ultra low k materials and its effects on the structure and property of these materials. X-ray reflectivity (XRR) measurement can be used to measure film thickness, density and interface roughness, which are important parameters to check for after plasma treatments. In the current study, porous SiLK (p-SiLK) was treated with various plasmas, such as O2, O2/N2, H2/N2, CH2F2/Ar and CF4/O2. XRR results indicate that the density of the p-SiLK films remains unchanged after various plasma treatments. Surface roughening occurs during the plasma treatments, accompanied by the decrease in film thickness. Plasma-induced surface roughening was also observed using atomic force microscope (AFM). Such roughening is more severe for plasma treatments using oxygen-containing plasmas. FTIR analysis indicates that the chemical structure of the p-SiLK films is not significantly affected by plasma treatment. It is reasonable to conclude that oxidation of the surface plays a major role in the plasma-induced change in surface roughness and film thickness.
Optimizing Gas-Assisted FIB Processes: The Importance of Oft-Ignored Secondary Parameters
Authors: Rue C. , Herschbein S. , Scrudato C. , Fischer L. , Shore A.
Published: December 2020

The efficiency of Gas-Assisted Etching (GAE) and depositions performed using the Focused Ion Beam (FIB) technique is subject to numerous factors. Besides the wellknown primary parameters recommended by the FIB manufacturer (pixel spacing, dwell time, and gas pressures), certain secondary factors can also have a pronounced effect on the quality of these gas-assisted FIB operations. The position of the gas delivery nozzle during XeF2 mills on silicon is examined and was found to affect both the milling speed and the texture on the floor of the FIB trench. Limitations arising from the memory capacity of the FIB computer can also influence process times and trench quality. Exposing the FIB vacuum chamber to TMCTS during SiO2 depositions is found to temporarily impede the performance of subsequent tungsten depositions, especially following heavy or prolonged TMCTS exposure. A delay period may be required to achieve optimal tungsten depositions following TMCTS use. Finally, the focusing conditions of the ion beam are found to have a significant impact on the resistance of FIB-deposited metal films. This effect is attributed to partial milling of the deposition film due to the intense current density of the collimated ion beam. The resistances of metal depositions performed with intentionally defocused ion beams were found to be lower than those performed with focused beams.
Silicon Thinning using Ultra-Short Pulse Laser Ablation
Authors: Beaudoin F. , Perdu P. , DeNardi C. , Desplats R. , Lopez J. , Faucon M.
Published: December 2020

Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.
Failure Analysis of Functional Failures in a Designed for FA SRAM
Authors: Garteiz Gil
Published: December 2020

Designing devices for failure analisys (FA) is becoming increasingly critical as structure geometries and killer defects rapidly decrease in size. Naturally, devices that are designed for FA are much easier to analyze and have a higher FA success rate than those that are not. Several analyses of functional failures in a 0.18um CMOS SRAM are presented in this paper to demonstrate “Design For FA” usefulness and application. Physical analysis methodology is also discussed.
Chemical Delidding and Thin-Die Extraction of Flip-Chip Devices Using N-Methyl-2-Pyrrolidone
Authors: Agarwal Reena , Ramanujachar Kartik , Rusli Darwin , Wills Scott , Cowens Marvin , Stierman Roger
Published: December 2020

Chip access for flip-chip packages in high-performance microprocessors is performed by removing the lid then by extraction of the die from the package substrate. Residual stresses built in temperature cycled (TC) units result in a low success rate using conventional delidding techniques. A need has developed in failure analysis for stress-free removal of the materials surrounding a flip-chip device. This paper discusses a novel, cost effective, wet chemical process that has been developed for thin die and lid removal of flip-chip packaged units. The process uses n-methy-2-pyrrolidone (NMP) for epoxy-based lid attach and underfill materials. A reflux unit is designed to reduce the risk of fire and explosion when the sample is heated in the solvent to the desired temperature. The method of heating reduces the chance of thermal shock, which could fracture the sample due to rapid heating or cooling.
Noninvasive Acoustic Phonon Characterization of Dynamic MEMS
Authors: Wong W.K. , Palaniapan M. , Wong C.L. , Wang S.R. , Tay F.E.H.
Published: December 2020

This paper describes an acoustic phonon-based characterization technique as a novel tool for the characterization of dynamic microelectromechanical (MEMS) devices such as resonators, switches, micromirrors, accelerometers and gyroscopes. The technique intrinsically features non-invasive characterization due to the favorable transmission properties of acoustic phonons through device packaging and high throughput due to universal detectability from a single detection point, which facilitates high volume wafer and package level testing. The dependence of phonon generation on material properties yields information not obtained in existing electrical, optical and electron beam testing techniques such as contact tribology, energy dissipation, non-linear device behavior and device resonance modes. Preliminary case study results show that phonon-based characterization not only provides efficient, non-destructive testing (NDT) of MEMS functionality, but also insights into MEMS device lifecycle behavior.
Triangulating to a Defect’s Physical Coordinates Using Multiple Supply Pad IDDQs—Test Chip Results
Authors: Plusquellic Jim , Acharyya Dhruva , Tehranipoor Mohammad , Patel Chintan
Published: December 2020

Quiescent Signal Analysis (QSA) is an IDDQ method for detecting defects that is based on the analysis of multiple simultaneous measurements of supply port IDDQs. The nature of the information in the multiple IDDQs measurements also allows for the localization of the defect to physical coordinates in the chip. In previous work, we derived a hyperbola-based method from simulation experiments that is able to "triangulate" the position of the defect in the layout. In this paper, we evaluate the accuracy of this method using data collected from 12 chips fabricated in a 65 nm process.
Study on the Effect of FIB Electron Beam Assisted Platinum Deposition on TEM Sample Analysis
Authors: Hu Jianqiang , Zhou Jing , Li Ming , Gao Qiang , Niou Chorng , Chien Kary W.T.
Published: December 2020

Electron beam assisted platinum film deposition has been found to be an effective method to protect the sample surface for both FIB and TEM analysis. In this paper, the phenomena of electron beam assisted deposition of platinum will be reviewed The results suggest that a 45 nm thick residual Pt film can effectively protects (100) silicon from damage induced by ion beam assisted Pt deposition. A carbon based organic layer under the electron beam assisted Pt has been observed. The mechanism and results on exposed oxide thickness measurements will be discussed. It is suggested that a carbon glue cap be used as a protective layer or polysilicon be deposited in line before submitting the wafer for TEM sample preparation and observation.
Conductive Atomic Force Microscopy Application for Semiconductor Failure Analysis in Advanced Nanometer Process
Authors: Lin Kun , Zhang Hang , Lu Shey-shi
Published: December 2020

Conductive Atomic Force Microscopy (C-AFM) is a useful tool for both electrical failure analysis (EFA) and physical failure analysis (PFA). In this paper, the root cause of a physical failure in an analysis image was verified from the evidence of two-dimensional AFM profile depth measurement. The other analysis technique, which is electrical parameter extraction by contacting I-V spectroscopy measurement, was also utilized to locate the possible defects. As a result, the failure mechanism was illustrated with an AFM topography image, which showed the silicon surface profile after removal of cobalt salicide (self-alignment silicide) by dilute HF. The vertical junction leakage path was identified with a C-AFM image.
Combine Nanoprobing Technique with Difference Analysis to Identify Nonvisual Failures
Authors: Shen Cha-Ming , Chuang Tsan-Cheng , Chang Jie-Fei , Chou Jin-Hong
Published: December 2020

This paper presents a novel deductive methodology, which is accomplished by applying difference analysis to nano-probing technique. In order to prove the novel methodology, the specimens with 90nm process and soft failures were chosen for the experiment. The objective is to overcome the difficulty in detecting non-visual, erratic, and complex failure modes. And the original idea of this deductive method is based on the complete measurement of electrical characteristic by nano-probing and difference analysis. The capability to distinguish erratic and invisible defect was proven, even when the compound and complicated failure mode resulted in a puzzling characteristic.
Defect Localization Technique for Logic Circuits in Sub 90nm SOI Microprocessors
Authors: Kane Terence , Tenney Michael P. , Bruley John , Boettcher Steven
Published: December 2020

The emergence of multiple core, high speed microprocessors in sub 90nm node technologies present challenges for defect localization, especially in SRAM logic circuits involving Array Built In Self Test (ABIST). Voltage sensitive, temperature sensitive and frequency sensitive soft defects in these ABIST logic circuits can spell the difference between pass and failure, especially for Silicon on Insulator (SOI) designs. High density SRAM arrays with ever shrinking critical dimensions in multiple core, high speed microprocessor designs dictate an increased number of ABIST logic circuits of complex hierarchical design. Scan chain diagnostics to pinpoint the failing scan latch logic circuit following ABIST testing frequently results in ever greater uncertainty; increased number of suspect circuits related to the failure. A case study analysis successfully applied to pinpointing a voltage sensitive logic circuit defect in a 90nm SOI design is described here, followed by root cause TEM analysis.
Fine MCP Decapsulation Technology Development
Authors: Zhou Jianwei , Zheng Wei , Lee Taekoo
Published: December 2020

Multi-Chip Package (MCP) decapsulation is now becoming a rising problem. Because for traditional decapsulation method, acid can’t dissolve the top silicon die to expose the bottom die surface in MCP. It makes inspecting the bottom die in MCP is difficult. In this paper, a new MCP decapsulation technology combining mechanical polishing with chemical etching is introduced. This new technology can remove the top die quickly without damaging the bottom die using KOH and Tetra-Methyl Ammonium Hydroxide (TMAH). The technology process and relative application are presented. The factors that affect the KOH and TMAH etch rate are studied. The usage difference between the two etchant is discussed.
Measurement Techniques for Thermally Induced Warpage to Predict Ball-Grid Array Package-on-Package Solder Compatibility
Authors: Davis Thomas B. , Morrison Mike , Krawzak Thomas , Reeder Jeff , Jiang Tom
Published: December 2020

The semiconductor industry is recognizing an increasing need to define the compatibility of various products joined in package-on-package configuration by solder reflow. Within the scope of the application, this paper discusses: sample preparation; warpage data collection methods; extraction of usable images and numerical data from the measurements; creation of visual warpage patterns for the top and bottom components of stacked package sets; mathematical determination of variation or separation of parts at critical locations during reflow; and finite element analysis of parts and processes to understand and predict reactions to design changes.
Backside 3D Analysis of Power Device Using an ITO Electrode
Authors: Goto Yasunori
Published: December 2020

The power device has a vertical structure and analysis of defective products generally occurs from the backside because the surface is covered in an aluminum electrode and the backside in a metallic electrode. We will discuss the development of backside 3D analysis technique using defective products that emerged due to the marginal valuation of the power device development. First, it was verified that applying a DC voltage uniformly to the entire backside would be effective in placing a glass with an ITO (Indium Tin Oxide) transparent electrode in contact with the backside; therefore it was able to specify a failure point using the IR-OBIRCH (Infra Red-Optical Beam Induced Resistance CHange) method [1]. Then, a micro-sample was extracted without missing the failure point and observed the 3D perspective method; thus it was clear that existence of crystal lattice defects were thought about as the cause of failure.
Automated TEM Sample Preparation on Wafer Level for Metrology and Process Control
Authors: Rijpers Bart , Verkleij Dick , Langer Eckhard
Published: December 2020

As the feature size of semiconductor technology shrinks, cross-section metrology becomes more and more challenging. The generation of cross section metrology data is important for the introduction of new advanced integration schemes, rapid yield learning, and continuous process control for stable manufacturing. In this paper an automated way of TEM cross-section preparation by FIB is described to ensure fast cycle time for preparation and analysis. A dual column FIB/SEM system is used to prepare TEM samples from multiple locations of a 300 mm wafer batch. Subsequently, the TEM lamella is transferred to a grid using an ex-situ lift-out station. Two dedicated applications are shown, a Focus Exposure Matrix (FEM) on patterned photo resist and a process control case study on an etched poly-silicon transistor gate.
Applications of Electron Tomography on Advanced DRAM
Authors: Luo Jian-Shing , Russell Jeremy D. , Huang Lang-Yu , Chen Tsang-Pei
Published: December 2020

It is well known that pursuing the miniaturization of devices to lower the cost and increase high-speed performance are extremely important goals for dynamic random access memory (DRAM). Therefore, electron tomography has a high potential for application to novel generation DRAMs. In this article, several real-case examples of electron tomography on 90 nm technology DRAM, including barrier layer step coverage, via fill process observations and defect analysis are reported. These cases were demonstrated to show the applications of bright field-transmission electron microscope (BF-TEM) and HADDF- scanning transmission electron microscope (STEM) tomography to analyze barrier layer step coverage, defects, and W fill quality in advanced DRAM. By appropriate use of BF-TEM or HAADF STEM tomography, optimal information for failure analysis, root cause clarification, and subsequent process improvements can be obtained. Electron tomography holds significant advantages in comparison to traditional TEM imaging for appropriate cases.
Ultra Low Voltage Probing on 45 nm CMOS by Time Resolved Emission (TRE) Technology
Authors: Young Chi-Lin , Ng Paul , Contreras Francisco , Ispasoiu Radu , Vickers Jim , Cotton Dan , Shaw Chris
Published: December 2020

Ultra low voltage probing by time resolved emission (TRE) technology below 1.0V is very challenging for micro-processor debug in practical operation condition. This is because the photo-emission rate reduces exponentially as the power supply voltage decreases. In this paper, a novel technology with improved detector in solid immersion lens (SIL) TRE system was demonstrated for low voltage and small node probing. An improved detecting scheme was developed to collect 30% more photon detection efficiency than the previous system. The SIL TRE with low dark noise detector technology has been successfully applied to optical probing for 45nm product debug. The performance gain improvement in strong and weak signal regime has been demonstrated against the current detector technology. It has also demonstrated the capability on probing the ultra low voltage at 0.75 V for sub micron node of 45nm process.
The Failure Site Localization Using Absorbed Current Image and Voltage Distribution Contrast
Authors: Nokuo Takeshi , Eto Yoshiyuki , Marek Zane
Published: December 2020

This paper describes the detection range of two failure site localization methods developed by the authors. One method, known as the absorbed current image (AEI) technique, is ideally suited for analyzing test element group interconnects on a huge scale, while the other method, known as voltage distribution contrast (VDIC), works best for interconnects in actual devices which have relatively low resistance.
Series Capacitance in High Speed Differential Pairs – A Failure Analysis Case Study
Authors: Konkol Nicholas
Published: December 2020

Series capacitors, under certain conditions, within high speed differential pair signals were found to have negative effects on mother board functions inside a personal computer (PC). It was noted in one case study that three conditions affected capacitors with this type of application: capacitor aging, DC offset voltage, and cold temperatures. These conditions led to the decrease in capacitance which then disabled the network connection inside the PC. It was concluded that a strategically chosen capacitor type alleviates these conditions. The capacitor type primarily depends on the dielectric material.
Latch-Up Root Cause Analysis for New ASIC Design
Authors: Danielak W. , Machado W. , Jaffer M. , Waldstein S. , Jordan A. , Sachdev M. , Li D.
Published: December 2020

The analyzed new Application Specific Integrated Circuit (ASIC) design failed latch-up test on two input pins during current stress. In order to determine the root cause, the Failure Analysis (FA) with use of backside Emission Microscopy (EMMI) was performed. The EMMI results were followed by detailed layout and circuit analysis. It was found that the root cause of the latch-up is an abutment of two specific cells (called “cell C” and “cell D”), where the N-well was grounded creating a parasitic NPN transistor sustaining the latch-up. A detailed calculation of parasitic interconnection resistances from the layout revealed some differences between latching and non-latching pins. The analytical model to explain the latch-up behavior based on parasitic resistances was applied successfully to root cause analysis. Summarizing, the latch–up behavior can be explained by the abutment of cells C and D, parasitic interconnect resistances and cell location with respect to the substrate bumps. In conclusions the following recommendations were made: 1. Remove the n-well in cell D; 2. Connect specific cells (B and D) to higher supply voltage; 3. Implement p+ guard rings for cells C and D; 4. Optimize placement of ground bumps; 5. Eliminate abutment of cell C and D.
FAMOS Fail Bit Verification/Characterization via NanoProbe
Authors: Dexter Mark , Stallcup Richard , Gunturi Sarma
Published: December 2020

The nanoprobe technique has been widely adapted to many circuit analyses from 6T SRAM bitcells to analog circuit failure analysis. But among the applications widely reported, little has focused on the flash bitcell analysis. This paper presents the more unusual case where fail device isolation is insufficient to determining the defect and/or the root cause. It provides information on measuring floating gate bitcell characteristics and understanding the fail through the customer fail mode and soft programming. In this case, the nanoprobe technique is established to understand the electrical signature of a customer return 1T flash bit fail. By using nanoprobe DC bit characterization, it was determined that data gain failures were due to thin or compromised interpoly dielectric.
Failure Analysis of Breakdown Sites in Silicon Solar Cells
Authors: Breitenstein Otwin , Bauer Jan , Wagner Jan-Martin , Blumtritt Horst , Zakharov Nikolai , Lotnyk Andriy
Published: December 2020

In this contribution the use of electroluminescence imaging, bias-dependent lock-in thermography, special dark and illuminated lock-in thermography techniques, and electron microscopy techniques is demonstrated for investigating the physical mechanism of breakdown in multicrystalline silicon solar cells. Two dominant breakdown mechanisms are identified, which are breakdown at recombination-active crystal defects, showing a relatively soft breakdown, and avalanche breakdown at dislocation-induced etch pits, which occurs very steep (hard breakdown) and dominates in our cells at high reverse bias.
Writing Better Research Reports
Authors: Davis Thomas B.
Published: December 2020

In the world of failure analysis and material characterization, compiling a final report may not be on our priority project list yet we will discover that the layout, syntax, and format of our reports can have as large an impact on the reader as the data we have collected. In an industry where the transmission of valid and understandable information from the lab floor to the requestor is vital, it becomes necessary for each of us to search for resolution to this quandary. In answering the question of how can we write better research documents and reports, this paper will present research to discuss 1) the needs of each group involved with research documents and reports; 2) the difference in expectations between readers and writers; 3) the techniques used to teach report writing; and 4) what makes an effective report. The conclusion of this paper will form a generalized statement of the factors that lead to better-written research documents and reports and will point out areas of consideration for future research.