bluuebunny/crossref_metadata_2025 huggingface dataset:
The Use of a Fresnel Lens on an Actual Failure
Authors: van Veenhuizen Marc , Kerver Harry , Peters-Wu Lei , Lee Sukho , Zachariasse Frank
Published: December 2020

We report on the use of Fresnel lenses in the failure analysis (FA) of actual failures. The design parameters affecting the performance of Fresnel lenses in terms of resolution, magnification, and field of view have been analyzed. It is demonstrated that the magnification depends linearly on the change in focus distance caused by the lens, normalized by the silicon thickness. The focus distance shift that can be obtained with the Fresnel lens is observed to saturate, whose root-cause remains to be investigated. The field of view is shown to increase with the silicon thickness and, to a lesser extent, with the number of lens rings. It has also been shown that these lenses are robust against patterning distortions. The OBIRCh responses of actual device failures before and after lens placement have been compared, demonstrating clearly the increase in magnification, resolution, and the ability to focus light which all translate into a better electrical fault isolation. All in all, this study proves the usefulness of Fresnel lenses for FA purposes and offers clear guidelines that will facilitate proper lens design.
Wire-Wound Resistor Investigation—A Case Study
Authors: Wheeler Jason , Wolfgong John
Published: December 2020

The focus of this paper is to present an interesting case study involving Vishay wire-wound (WSC model) resistor failures, which affected a significant number of production and fielded assemblies. The failures were considered “mission critical”, which was the primary driver necessitating root cause analysis. A disciplined approach to the failure analysis effort was established, which resulted in root cause determination and the generation of appropriate corrective actions. This paper will highlight a non-conventional decapsulation method used to preserve the integrity of the fragile resistive element and a “lucky break” that was instrumental in linking the supplier’s actions to the failures.
Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
Authors: Chinone N. , Cho Y. , Kosugi R. , Tanaka Y. , Harada S. , Okumura H.
Published: December 2020

A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.
Investigation of Phase Change Memory Confined Cell Endurance Using Transmission Electron Microscopy
Authors: Zhu Yu , Kim S. , Gonsalves J. , Brightsky M. , Sosa N. , Lam C. , Chen J. , Shen J. , Gong N. , Cha J. , Ma T.P.
Published: December 2020

The endurance performance of a novel confined phase change memory cell with metallic nitride liner is investigated using a transmission electron microscope (TEM). Write endurance has been shown to be substantially improved by this new structure [1]. Memory cells that had been cycled up to 109 were cross-sectioned and studied using the TEM. A majority of the electrically observed endurance failure mechanisms were stuck-SET. Physical failure analysis showed the failed cell is always associated with large void formation and material segregation. In-situ TEM analysis was used to study the void formation, accumulation and movement, where the memory cell was simultaneously operated and imaged in the TEM. Also, an interesting self-healing process of the void was recorded during the set/reset operation.
Elemental Characterization of Sub 20 nm Structures in Devices Using Low Energy SEM-EDS
Authors: Sagar James T. , Holland James , Burgess Simon R. , McCarthy Connor , Xiaobing Li
Published: December 2020

Here we investigate a new energy dispersive X-ray detector, which for the first time is optimized to work at the conditions typically used for high resolution imaging in a scanning electron microscope (SEM). To achieve this, significant developments have been made with regard to detector geometry and electronics. Using this new detector we are able to analyze structures in bulk semiconductor devices as well as thin sections at sub 20nm length scales in SEM. Here we outline the conditions required to carry out this analysis. Based on these results we propose workflows to accelerate failure analysis by obtaining the analysis result directly in the SEM without the need for analysis using transmission electron microscopy (TEM).
TEM Sample Prep Tool Matching—DualBeam FIB Cut Look and Measure Monitoring for Process Control and Development in a 300 mm IC Fab
Authors: Jeon Jangbae
Published: December 2020

This work presents a novel method of continuous improvement for faster, better and cheaper TEM sample preparation using Cut Look and Measure (CLM). The improvement of the process is executed by operational monitoring of daily beam conditions, end products, bulk thickness control, recipe usage and tool running time. This process produces a consequent decrease in rework rate and process time. In addition, it also increases throughput with better quality TEM samples.
Scanning Surface Photovoltage Microscopy for Stress Analysis in Nanoscale CMOS Devices
Authors: Dahanayaka Daminda , Kaszuba Phil , Moszkowicz Leon , Wells Randall , Slinkman James , Bumm Lloyd A.
Published: December 2020

Mechanical stress is a critical parameter in the design and manufacture of devices in very large scale integrated (VLSI) circuits. Whether intentionally introduced or parasitic, mechanical stress in nanoscale silicon technologies can alter carrier mobility as by as much as 25%, which can significantly affect device performance. Currently stress metrology for in-line production is conducted only at a wafer monitor level. For design purposes, the stress state in active device regions is usually inferred from electrical data. In this paper an instrument which we have developed is described for measuring mechanical stress in nanoscale silicon devices with high spatial resolution using scanning surface photovoltage microscopy (SSPVM). Other existing techniques are generally not suitable for making such measurements on production silicon nano-device structures in situ.
Fast Root Cause Identification Using Combination of Failure Analysis and In-Line Inspection
Authors: Song Zhigang , Weng Weihao , Engel Brett
Published: December 2020

Failure analysis plays an important role in yield improvement during semiconductor process development and device manufacturing. It includes two main steps. The first step is to find the defect and the second step is to identify the root cause. In the past, failure analysis mainly focused on the first step, namely how to find the defect for a failure; because in the previous generations of technology, once the defect was found, its root cause was relatively easy to be understood. As the current advanced semiconductor technology has become tremendously complicated, especially 3D devices, like FinFET, a defect found by failure analysis can be substantially transformed from its original defect by subsequent processes and can be totally different from its origin in size and shape. Thus, sometimes, the second step, identifying the root cause for a defect becomes more challenging and takes more time than the first step. With combination of failure analysis and inline inspection, it enables us to establish the relationship between the failure analysis defect and an in-line defect. This can link the defect for a device functional failure to its source layer and process step more quickly, leading to fast root cause identification. In this paper, the methodology was validated by fast identification of the root causes for three case studies in the latest FinFET technology.
Failure Analysis and Process Verification of High-Density Copper ICs Used in Multichip Modules
Authors: Walraven Jeremy A. , Jenkins Mark W. , Simmons Tuyet N. , Levy James E. , Jensen Sara E. , Jones Adam , Edwards Eric E. , Bartz James A. , Cole Edward I. , Soirez Lovelace , Norbert John
Published: December 2020

Manufacturing of integrated circuits (ICs) using a split foundry process expands design space in IC fabrication by employing unique capabilities of multiple foundries and provides added security for IC designers [1]. Defect localization and root cause analysis is critical to failure identification and implementation of corrective actions. In addition to split-foundry fabrication, the device addressed in this publication is comprised of 8 metal layers, aluminum test pads, and tungsten thru-silicon vias (TSVs) making the circuit area > 68% metal. This manuscript addresses the failure analysis efforts involved in root cause analysis, failure analysis findings, and the corrective actions implemented to eliminate these failure mechanisms from occurring in future product.
Characterization of Dynamic Laser Stimulation Approach to Locate Memory Fails Using EeLADA
Authors: Goh S.H. , Yeoh B.L. , Ngow Y.T. , Hao Hu , Tan Alan , Chan Y.H. , Zhao Lin , Lam Jeffrey , Tay C.C.
Published: December 2020

Most modern system on-chip incorporates a significant amount of embedded memories to achieve a reduced power consumption, higher speed and lower cost. In general, such memories are evaluated using built-in self-testing methods and in the event of a failure, bitmapping is heavily relied on for fault localization to guide subsequent failure analysis. However, a fast yield ramp can be impeded when bitmapping is not enabled in time or is inaccurate. This work studies the feasibility of employing electrically-enhanced LADA as an alternative method to debug embedded memory failures. Results are presented to demonstrate that the resolution of localization depends on the precision of diagnostic test pattern used and the laser spot size.
High Throughput Phase Mapping for Metrology Using Low-Loss EELS
Authors: Fu Lianfeng , Chen Lifan , Wang Haifeng
Published: December 2020

The plasmon-loss region of the low-loss electron energy loss spectroscopy (EELS) contains chemical information similar to core-loss EELS; therefore it can be utilized as finger-printing elements. A high throughput phase mapping technique based on plasmon energy (Ep) is proposed. We have successfully applied this phase mapping technique into two case studies in our magnetic head manufacturer processes. This Ep phase mapping can be applied to not only the data storage but also semiconductor industries.
Trends in Discrete Power MOSFET and Power System In-Package Fault Isolation
Authors: Kearney Ian , Dipsey Mark
Published: December 2020

Photoluminescence, defect-band emission, and Lock-in Infrared Thermography (LIT) generally enable the correlation of multi-crystalline silicon defect types. Long Wavelength Infrared (LWIR) thermal imaging has traditionally seen limited application in failure analysis. LWIR cameras are typically uncooled systems using a microbolometer Focal Plane Arrays (FPA) commonly used in industrial IR applications, although cooled LWIR cameras using Mercury Cadmium Tellurium (MCT) detectors exists as well. On the contrary, the majority of the MWIR cameras require cooling, using either liquid nitrogen or a Stirling cycle cooler. Cooling to approximately −196 °C (77 K), offers excellent thermal resolution, but it may restrict the span of applications to controlled environments. Recent developments in LWIR uncooled and unstabilized micro-bolometer technology combined with microscopic IR lens design advancements are presented as an alternative solution for viable low-level leakage (LLL) defect localization and circuit characterization. The 30 micron pitch amorphous silicon type detector used in these analyses, rather than vanadium oxide (VOx), has sensitivity less than 50mK at 25C. Case studies reported demonstrate LWIR enhanced package-level and die-level defect localization contrasted with other quantum and thermal detectors in localization systems.
To Reveal Invisible Doping Defect by Nanoprobing Analysis, Scanning Capacitance Microscopy, and Simulation
Authors: Lai LiLung , Yang Li , Wang Chunhui , Wu Yong
Published: December 2020

Modern techniques of semiconductor physical failure analysis are effective at revealing physical defects and device material composition, however, dopant profiles/ concentrations are not easily determined since these materials are in trace concentrations. Therefore, defects related to dopants are often referred to as invisible defects. New techniques have been incorporated into failure analysis to reveal the invisible defects resulting from electrical carriers (via SCM/SSRM) and physical doping profile (via STEM/EDS) in nm-scale dimension. Using nanoprobing analysis, simulation for electrical modeling, along with EDS and SCM for physical profiling, we have a great opportunity to uncover abnormal doping issues allowing completion of the failure analysis and the execution of corrective actions.
Characterization of Gate Oxide Pinhole Defect in NMOS FinFET Devices
Authors: Chen Liangshan , Bousquet Arnaud , Schaeffer Tanya , Sheridan Lucile C. Teague , Hodgkins Lowell , Fu Bianzhu , Oh Chongkhiam
Published: December 2020

This paper highlights the application of nanoprobing technique and electron tomography analysis to characterize the tiny gate oxide pinhole defect in NMOS FinFET devices. Nanoprobing technique was utilized to achieve a better understanding on the failure mechanism by characterizing the device electrical behaviors, and electron tomography, capable of mitigating the common projection issue encountered by general TEM analysis, was applied for physical analysis. It has been demonstrated through two cases, one logic fail and the other memory fail, that these two techniques together can effectively identify the root cause of pinhole defect. This type of pinhole defect, characterized by a tiny spot of oxide discontinuity and without excessive materials inter-diffusion, has been extremely challenging in FA analysis. This paper will provide the analysis details leading to the successful characterization of such type of oxide pinhole defect.
Targeted Memory Test for Enhanced Diagnostic Fault Localization
Authors: Safran Laura , Hodge Christopher , Sylvestri John
Published: December 2020

A customized test resource has been created on Linux based automated test system to enhance and accelerate diagnostics and fault localization on random access memory. The resource, Targeted Memory Test, allows creation of a user defined sub-array which targets a specific area of a memory array. The resource includes a customized pattern set which can then be used with the unique Advanced Characterization shmoo plot routine to fully characterize any given failure mode. The sub-array patterns and characterization data can provide a clear understanding of the failure and reduce the time needed for both fault localization and physical failure analysis.
Pattern Search Automation for Combinational Logic Analysis
Authors: Venkat Krishnan Ravikumar , Xuan Seah Yi , Gabriel Lim , Abel Tan , Winson Lua , Ranganathan Gopinath , Angeline Phoa , Meng Chua Choon
Published: December 2020

Combinational logic analysis (CLA) using laser voltage probing allows studying standard cells such as NOR or NAND gates as a whole, instead of individual transistors. The process involves building a reference library of laser probing (LP) waveforms and comparing them to signals from the real device. While CLA has greatly increased the success rate and turn-around time for LP, there are difficulties in signal interpretation. This is partly due to the lack of precise understanding of the laser interaction area and probe placement and partly due to difficulties identifying the correct logic states in the waveform. In this work, we have significantly improved the CLA process by first predicting the shape of the waveform based on laser interaction with the target circuitry and second, implementing an automated pattern search algorithm to further increase the speed and reliability of CLA using LP.
Electron Channeling Contrast Imaging for Beyond Silicon Materials Characterization
Authors: Strakos Libor , Machek Ondrej , Vystavel Tomas , Schulze Andreas , Han Han , Caymax Matty , Young Richard
Published: December 2020

As semiconductor devices continue to shrink, novel materials (e.g. (Si)Ge, III/V) are being tested and incorporated to boost device performance. Such materials are difficult to grow on Si wafers without forming crystalline defects due to lattice mismatch. Such defects can decrease or compromise device performance. For this reason, non-destructive, high throughput and reliable analytical techniques are required. In this paper Electron Channeling Contrast Imaging (ECCI), large area mapping and defect detection using deep learning are combined in an analytical workflow for the characterization of the defectivity of “beyond Silicon” materials. Such a workflow addresses the requirements for large areas 10-4 cm2 with defect density down to 104 cm-2.
Investigation of Die Tilting of Packages with Single and Multi-chips
Authors: Wee Lo Chea , Yee Tan Sze , Yin Gan Sue , Sheng Goh Cin
Published: December 2020

Advanced package technology often includes multi-chips in one package to accommodate the technology demand on size & functionality. Die tilting leads to poor device performance for all kinds of multi-chip packages such as chip by chip (CbC), chip on chip (CoC), and the package with both CbC and CoC. Traditional die tilting measured by optical microscopy and scanning electron microscopy has capability issue due to wave or electron beam blocking at area of interest by electronic components nearby. In this paper, the feasibility of using profilemeter to investigate die tilting in single and multi-chips is demonstrated. Our results validate that the profilemeter is the most profound metrology for die tilting analysis especially on multi-chip packages, and can achieve an accuracy of <2μm comparable to SEM.
Electromigration Response of Microjoints in 3DIC Packaging Systems
Authors: Attari Vahid , Duong Thien , Arroyave Raymundo
Published: December 2020

In multilevel 3D integrated packaging, three major microstructures are viable due to the application of low volume of solders in different sizes, and/or processing conditions. Thermodynamics and kinetics of binary compounds in Cu/Sn/Cu low volume interconnection is taken into account. We show that current crowding effects can induce a driving force to cause excess vacancies saturate and ultimately cluster in the form of microvoids. A kinetic analysis is performed for electromigration mediated intermetallic growth using multiphase- field approach. Faster growth of intermetallic compounds (IMCs) in anode layer in the expense of shrinkage of cathode IMC layer in shown. This work paves the road for computationally study the ductile failure due to formation of microvoids in low volume solder interconnects in 3DICs.
Asymmetric Data-Frequency Mapping and Multi Trigger-Probing for Improved Scan Debug
Authors: Swaminathan  , Anuradha  , Abuayob  , Eli  , Gitelmkher Konstantine , Nathan Bakken
Published: December 2020

Integrated-circuit device dimensions continue to shrink, enabling higher density of devices and smaller node size. A number of strategies to improve the resolution of failure analysis and fault isolation tools exist, but some of these techniques are reaching fundamental limits so that engineers are also challenged to innovative methods to increase the useful life of existing toolsets. Laser Scanning Microscopy including Laser Voltage Probing and frequency mapping struggle to maintain resolution commensurate with shrinking feature size. Here we present two methods to improve efficiency and capability of this toolset using existing optical hardware and configuration. The first method applies a frequency mapping technique using scan chain data patterns that allow for data manipulation. This enables an effective resolution increase through deconvolution of data collected in a sequence of scans completed on varied device states. A second method using multiple triggers per loop to evaluate a deterministic continuous wave signal is shown to reduce probe acquisition time, improve job throughput time, and enable, better signal-to-noise ratio for common scan chain debug workflow.
Reproducing the Fail from a Production Memory ATE on a Logic FA Tester
Authors: Rai Nivesh , Link Hans
Published: December 2020

We present a case study where an APG (Algorithmic Pattern Generator) based pattern from a memory tester is being converted to run on a logic FA tester. Due to the regular structure of memory patterns, the APG patterns are written in a high-level based language and converted on a real-time basis to be executed on the hardware. A logic analyzer is used to capture the test pattern that is seen by the Device Under Test (DUT). The captured test pattern is then converted to the Standard Test Interface Language (STIL) based pattern format with the help of a scripting language. An existing test program is modified to include the Timing, Levels, Specs and the pin configuration to adapt to the DUT. The failing condition for FA could be exactly reproduced after running the pattern on the FA tester and can be made as a generic solution for similar exercises.
Enhanced Scanning Nonlinear Dielectric Microscopy with Stepwise dC/dV and dC/dz Imaging—Achieving Qualitative, Quantitative and Artifact-Free Carrier Density Profiling of Semiconductor Devices
Authors: Yamaoka T. , Hasumura S. , Hirose R. , Ueno T. , Tamura K. , Yu Jing-jiang
Published: December 2020

High-resolution and high-sensitivity detection of free carriers in semiconductors is critical due to the trend of device miniaturization and diversification. To address this need, the AFM-based techniques of scanning spreading resistance microscopy, scanning capacitance microscopy, scanning nonlinear dielectric microscopy (SNDM), scanning microwave impedance microscopy, and scanning microwave microscopy are used. This paper demonstrates enhanced SNDM with stepwise dC/dV and dC/dz imaging, qualitative analysis, quantitative analysis, and artifact-free carrier-density profiling of semiconductor devices. The trace mode in enhanced SNDM is switched between contact (dC/dV measurement) state and non-contact (dC/dz measurement) state for every line scan whereby the sampling intelligent scan mode is switched these states every pixel. Using IMEC Si standards and Si power MOSFET as examples demonstrates that this SNDM methodology can provide qualitative, quantitative, and artifact-free carrier density profiling of semiconductor devices.
Novel Carrier Measurement Methodology for Floating Gate of Sub-20 nm Node Flash Memory Using Scanning Nonlinear Dielectric Microscopy
Authors: Hirota Jun , Takeno Shiro , Yamagishi Yuji , Cho Yasuo
Published: December 2020

The transistor structure of memory devices and other cutting-edge semiconductor devices has become extremely minute and complicated owing primarily to advances in process technology and employment of three-dimensional structures. Among the various approaches to improve the device performance and functionality, optimizing the carrier distribution is considered to be quite effective. This study focuses on scanning nonlinear dielectric microscopy (SNDM), a capacitance-based scanning probe microscopy technique. First, to evaluate SNDM's potential for high-resolution measurement, the most commonly used metal coated tip with a tip radius of 25 nm was used to measure a quite low-density impurity distribution. Then, after confirming that the SNDM's S/N ratio was sufficiently high for the smaller probe tip, an ultra-fine diamond probe tip with a nominal tip radius of lesser than 5nm as an SNDM probe tip to measure sub-20 nm node flash memory cell transistors was employed. Successful results were obtained and are reported.
GHz-Scanning Acoustic Microscopy Combined with ToF-SIMS/AFM for Wafer-Level Failure Analysis of Bonding Interfaces
Authors: De Wolf Ingrid , Khaled Ahmad , Franquet Alexis , Spampinato Valentina , Conard Thierry , Brand Sebastian , Kögel Michael , Wiesler Ingo
Published: December 2020

This paper discusses the implementation of GHz-Scanning Acoustic Microscopy (GHz-SAM) into a wafer level scanning tool and its application for the detection of delamination at the interface of hybrid bonded wafers. It is demonstrated that the in-plane resolution of the GHz-SAM technique can be enhanced by thinning the sample. In the current study this thinning step has been performed by the ion beam of a ToF-SIMS tool containing an in-situ AFM, which allows not only chemical analysis of the interface but also a well-controlled local thinning (size, depth and roughness).
Interpreting Laser-Based Fault Localization Results: Case Studies
Authors: Lee Sukho , van den Biggelaar John , van Veenhuizen Marc
Published: December 2020

Laser-based dynamic analysis has become a very important tool for analyzing advanced process technology and complex circuit design. Thus, many good reference papers discuss high resolution, high sensitivity, and useful applications. However, proper interpretation of the measurement is important as well to understand the failure behavior and find the root cause. This paper demonstrates this importance by describing two insightful case studies with unique observations from laser voltage imaging/laser voltage probing (LVP), optical beam induced resistance change, and soft defect localization (SDL) analysis, which required an in-depth interpretation of the failure analysis (FA) results. The first case is a sawtooth LVP signal induced by a metal short. The second case, a mismatched result between an LVP and SDL analysis, is a good case of unusual LVP data induced by a very sensitive response to laser light. The two cases provide a good reference on how to properly explain FA results.
Fast and Accurate Fault Localization Through Effective Use of Design Schematics
Authors: Oberai Ankush , Kamoji Rupa , Bhattacherjee Arpan
Published: December 2020

In modern-day semiconductor failure analysis (FA), the need for computer-aided design (CAD) has extended beyond the sole physical layout to a much larger scope of integrated circuit (IC) design data, such as the source schematic and netlist. Due to the improved accuracy of predicted failures reported by test and diagnosis tools, it has become virtually mandatory to correlate the potential failing schematic features (e.g., nets and instances) to their corresponding location on the physical-CAD layout and actual device under test (DUT). This paper covers the latest advancements of utilizing IC design schematics for fast and accurate fault localization; along with some of the most-effective methodologies for efficient root-cause analysis.
Failure Analysis on Inter Polysilicon Oxide Reliability Issues of 40nm Automotive NVM Device
Authors: Tan P. K. , Fransiscus R. , Pan Y. L. , Thoungh H. H. W. , Ting S. L. , Zhao Y. Z. , Wee T. L. , Tan H. , Neo S. P. , Chen C. Q.
Published: December 2020

Reliability tests, such as Time-Dependent Dielectric Breakdown (TDDB), High-Temperature Operating Life (HTOL), Hot Carrier Injection (HCI), etc., is required for the lifetime prediction of an integrated circuit (IC) product. Those reliability tests are more stringent and complex especially for automotive Complementary Metal–Oxide–Semiconductor (CMOS) devices, this because it involves human lives and safety. In foundries failure analysis (FA), Transmission Electron Microscopy (TEM) analysis often required in order to provide insights into the defect mechanisms and the root cause of the reliability tests. In this paper, application of high resolution Nano-probing Electron Beam Absorbance Current (EBAC), Nano-probing active passive voltage contrast (APVC), and TEM with Energy Dispersive X-Ray Spectroscopy (EDX) to identify the failing root cause of Inter- Poly Oxide (IPO) TDDB failure on an automotive grade Non- Volatile Memory (NVM) device was investigated. We have successfully demonstrated that TEM analysis after Nanoprobing EBAC/APVC fault isolation is an effective technique to reveal the failure root cause of IPO breakdown after reliability stresses.
Application of Two-pin EBIC Technique to Isolate the Defective Fin(s) in Advanced Bulk FinFET Devices
Authors: Cheong Kah Chin , Chen Liangshan , Wei Yuting , Zhang Yu , Popielarski Brian , Zhang Xiaodong , Oh Chongkhiam
Published: December 2020

This paper demonstrates a two-pin Electron Beam Induced Current (EBIC) isolation technique to isolate the defective Fin with gate oxide damage in advanced Fin Field Effect Transistor (FinFET) devices. The basic principle of this twopin configuration is similar to two-point Electron Beam Absorption Current (EBAC) technique: a second pin as ground on the gate is added to partially shunt the EBIC current and thus creates EBIC contrast from the defective Fin. In this way, the challenge of highly resistive short path inside the Fin in a narrow gate can be overcome. The paper will provide failure analysis details using this technique for defective Fin isolation.
Conductive-Dissipative-Isolating - Do the Actual Limits in Process Equipment Meet the Requirements of ESD-Sensitive Devices?
Authors: Jacob Peter , Kunz Albert
Published: December 2020

When considering CDM-like discharge, as it happens frequently in modern high-speed process and test equipment, it is important to avoid a so-called hard discharge in various electrostatic discharge (ESD)-sensitive devices. This study presents the results of experiments that were conducted to characterize the nature of hard discharge in various ESD sample materials: electrical pre-characterization, hard- vs. soft discharge test, oscilloscope measurements of the discharge characteristics, thickness measurements of metal table coatings and mates, and chargeability experiment. The results show that, following the existing standards in semiconductor manufacturing, hard CDM discharge cannot be prevented within the standardized lower resistance bandwidth. Insofar, the related standards ANSI 20.20 and IEC EN 61340-5-1 need to undergo a significant revision in the near future. For failure analysts, the results should be taken into consideration in order to advice useful corrective actions when accompanying client audits or doing ESD risk evaluations, especially within automated process equipment.
Study of Thermal Cycle Induced CPI Failure Mode in a Lidded FC-BGA Package
Authors: Morshed Muhammad Monzur , Chen Esther , Madan Anita
Published: December 2020

Dissimilarities of thermal expansion coefficient between chip and package materials results in stress and strain at the solder interconnect leading to fatigue failures. Underfill is used between chip and package to reduce the interfacial stress and hence increase reliability. In this work, four flipchip package test vehicles underwent thermal cycling to accelerate the stress and were investigated systematically with different failure analysis techniques to study their failure modes. The prevalent failure mode was observed to be at the corner area between the chip and package using different advanced failure analysis techniques. This work demonstrates the technical complexity of analyzing stress induced defects and provides insight into CPI-based material selection.
Unintentional Doping Effects on Atomically-Thin Nb-doped MoS2 Observed by Scanning Nonlinear Dielectric Microscopy
Authors: Yamasue Kohei , Cho Yasuo
Published: December 2020

Two-dimensional semiconductors such as atomically-thin MoS2 have recently gained much attention because of their superior material properties fascinating for the future electronic device applications. Here we investigate the nanoscale dominant carrier distribution on atomically-thin natural and Nbdoped MoS2 mechanically exfoliated on SiO2/Si substrates by using scanning nonlinear dielectric microscopy. We show that a few-layer natural MoS2 sample is an n-type semiconductor, as expected, but Nb-doped MoS2, normally considered as a p-type semiconductor, can unexpectedly become an n-type semiconductor due to strong unintentional electron doping.
З історії нумізматичної колекції Церковно-Археологічного музею при Київський духовній академії
Authors: Zraziuk Zinaida Alekseevna
Published: December 2020

Стаття присвячена нумізматичній колекції Церковно-археологічного музею при Київській духовній академії. Впродовж свого існування (1872-1920 рр.) музей зібрав прекрасну колекцію нумізматики, яка була широковідомою далеко за межі Російської імперії. 31 січня 1873 року указом Св. Синоду був затверджений статут київського Церковно-археологічного товариства та музей при ньому. Першим і єдиним секретарем Товариства став молодий викладач, що пропрацював у академії лише два роки, – Микола Іванович Петров (Рис. 1), який у майбутньому став відомим істориком, заслуженим ординарним професором, академіком. Поряд з церковними старожитностями музей збирав і нумізматичну колекцію. Однією з перших значних пожертв до новоствореного музею була колекція старожитностей і монет, подарована архімандритом Антоніном (А.І. Капустіним). У різні роки до музею дарували монети М.П. Чернєв,і А.Ф. Новицький, М. О. Леопардов та багато інших. Наприкінці ХІХ століття колекції монет нараховувала близько 17 тисяч одиниць. Після революції 1917 року діяльність Товариства була майже зупинена. У 1920 р. Київська духовна академія була ліквідована, а всі колекції передали до Лаврського музею культів і побуту. У 30-рр. ХХ століття нумізматичну колекцію Церковно-археологічного музею передали до історичного музею. У роки революції, громадянської війни, Першої світової колекція понесла значні втрати – її кількість скоротилась більше ніж вдвічі і сьогодні предмети, що походять з Церковно-археологічного музею є окрасою нумізматичної збірки Національного музею історії України. У статті прослідковано історію її створення, згадано людей, які зробили значний вклад у її створення.
POLÍTICAS PÚBLICAS E ESCOLA NA CONTEMPORANEIDADE
Authors: Fensterseifer Paulo Evaldo , Johann Maria Regina , Schütz Jenerton Arlan
Published: December 2020

O artigo tematiza a relação entre as políticas públicas e a instituição escolar no mundo contemporâneo. A partir do método bibliográfico encara-se a problemática de como nós, humanos, lidamos com a constituição plural do mundo humano comum. Se não nos anima ter um rei-filósofo, um tecnocrata, ou qualquer ente possuidor de uma epistéme ou uma techné que é capaz de resolver todos os problemas humanos (supostamente de vez), então é imprescindível acordar para a necessidade de se confiar que as soluções para os problemas do mundo humano possam partir dos próprios humanos e/ou envolvidos, resultantes do diálogo, da ação intersubjetiva, da pluralidade alcançada na esfera das decisões. Nessa direção, considera-se que a escola contemporânea não deveria aceitar a condição de mera demandante de recursos para cumprir objetivos que não ajudou a construir e postos como “dados naturais” de quem está “antenado” com seu tempo. Os fins da educação, e os meios para atingi-los, são políticos, e, enquanto tais, é nesta esfera que devem ser enfrentados, levando em conta a pluralidade constitutiva de uma sociedade democrática e republicana.
Pengembangan Media Pembelajaran Power Point Macro Berbasis Problem Based Learning Materi Besaran dan Pengukuran Sebagai Sumber Belajar Siswa Kelas X
Authors: Miswati Miswati , Amin Ahmad , Lovisia Endang
Published: December 2020

Penelitian ini bertujuan untuk “Mengembangkan Media Pembelajaran Power Point Macro Berbasis Problem Based Laerning pada Materi Besaran dan Pengukuran Sebagai Sumber Belajar Siswa Kelas X”. Masalah dalam penelitian ini 1) Bagaimana  cara mengembangkan media pembelajaran power point macro berbasis problem based laerning pada materi besaran dan pengukuran sebagai sumber belajar siswa kelas X?, 2) Bagaimanakah karakteristik media pembelajaran power point macro berbasis problem based laerning yang dikembangkan memenuhi sasaran kevalidan dan kepraktisan?, 3) Bagaimanakah respon siswa selama pembelajaran menggunakan media pembelajaran power point macro berbasis problem based laerning?. Model pengembangan yang digunakan yaitu Borg and Gall. Yang terdapat 10 tahapan yaitu: tahap potensi dan masalah, pengumpulan data, desain produk, validasi desain, revisi desain, uji coba produk, revisi produk, uji coba pemakaian, revisi produk dan produksi massal. Subjek penelitian kelas X MIPA SMA AL-IKHLAS Lubuklinggau dengan teknik purposive sampling. Pengumpulan data dilakukan dengan teknik observasi, wawancara, dan angket. Validasi yang dilakukan mendapatkan hasil dengan kategori sangat baik dengan skor 128. İnstrumentasi yang digunakan untuk menguku respon siswa menggunakan angket. Respon siswa kelompok terbatas dan guru mendapatkan skor 146 dalam kategori sangat setuju..Respon kelompok main field testing dengan mengerjakan soal quis 6 siswa tuntas berdasarkan KKM. Untuk angket respon siswa kelompok main field testing mendapatkan skor 312 dalam kategori sangat setuju. Sehingga dapat dikatakan bahwa media pembelajaran power point macro berbasis problem based laerning yang dikembangkan telah valid dan praktis.
Analysis of the current state of regulatory provision of formation and establishment between united territorial communities
Authors:   Land Management Institute of the National Academy of Sciences of Ukraine, Avramchuk B. , Loshakova Y. ,   National University of Life and Environmental Sciences of Ukraine
Published: December 2020

In the current conditions of decentralization and voluntary community integration, there is a need for a comprehensive, up-to-date, and high-quality study of their resource potential, distribution, and prospects for future community development. The most pressing issue for communities is the issue of the specific definition of their boundaries, planning, use, and protection of land, especially with regard to the authority to dispose of land resources outside the settlement. The article analyzes the constitutional basis of the administrative-territorial system and local self-government in Ukraine, the basic legislation, and the peculiarities of its application in the conditions of change. It is established that in the absence of the adoption of relevant laws, changes to existing ones, the incompleteness of implementation of measures on decentralization of power, untimely resolution of problems arising in the process of implementation of land management reform within the jurisdiction of local councils, the process of reforming local self-government is hampered.
Development of a geospatial database for the establishment of restrictions and encumbrances on land rights within settlements
Authors:   National University of Life and Environmental Sciences of Ukraine, Moskalenko A. , Dikun Yu. ,   LLC "TERRATOP"
Published: December 2020

The possibilities of building an information structure that can provide systematization and accumulation of spatial and attributive data to solve problems of spatial-temporal analysis and support the solution of the problem of simplifying the establishment of limits and encumbrances on land rights have been shown in the research. A general algorithm for establishing restrictions and encumbrances on land rights through a functional model was structured in the article. As a result of the research, a model of the geospatial database was developed as the main component of geoinformation support for the establishment of restrictions and encumbrances on land rights within settlements, which can solve spatial and temporal analysis and support the problem of simplifying the establishment of restrictions and encumbrances on land rights. The results of the research can be used in the process of developing master plans of cities and in the process of forming spatial decisions on land use.
MESLEKİ MÜZİK EĞİTİMİ VEREN KURUMLARDA ESER TEMELLİ BOZUK DÜZENİ BAĞLAMA ÖĞRETİMİ İÇİN BİR REPERTUVAR MODELİ ÖNERİSİ
Authors: AYKURT Hakan , BÖREKÇİ Alper
Published: December 2020

Bu araştırma, mesleki müzik eğitimi veren kurumların lisans düzeyinde verilen bozuk düzeni bağlama eğitiminde kullanılmakta olan eserleri bağlama eğitimcilerinin görüş ve deneyimleri doğrultusunda zorluk düzeylerine göre sınıflandırmak ve farklı seviyelerdeki öğrencilere yönelik eser seçiminde eğitimcilere kolaylık sağlamak amacıyla yapılmıştır. Betimsel bir durum çalışması olan bu çalışmanın katılımcılarını, 15 farklı üniversiteden 23 öğretim elemanı oluşturmaktadır. Araştırmanın verileri, hazırlanan değerlendirme anketi aracılığıyla elde edilmiştir. Araştırmada bağlama eğitimcilerinin kişisel deneyimlerine bağlı görüşleri doğrultusunda bağlama eğitiminde kullanıldığı tespit edilen 261 adet eserin TRT repertuvarında yer alan notasyonları esas kabul edilerek, bağlama eğitimcilerinin verdiği puanlar sonucu zorluk derecelerine göre sınıflandırılması yapılmıştır. Elde edilen sonuçlar neticesinde, başlangıç düzeyinde 28 adet eser, orta düzeyde 183 eser, ileri düzeyde ise 50 eser belirlenmiştir. Buna göre, en kolay eser 2,21 puan ortalamasıyla “Uzun İnce Bir Yoldayım” olurken, en zor eserler ise 11,6 puan ortalamasıyla “Nihavend Uvertür” ve “Naz Nazı” olarak belirlenmiştir. Elde edilen sonuçlar neticesinde, bağlamada icracıların teknik becerilerini geliştirmeye yönelik yeni çalgısal eserlerin bestelenmesi ve bunların bağlama öğretim programlarına dahil edilmesine yönelik çeşitli önerilerde bulunulmuştur.
19. YÜZYIL ROMANTİK VİYOLA SONATLARI EKSENİNDE YORUMA YÖNELİK MÜZİKAL VE TEKNİK YAKLAŞIMLAR
Authors: ALTINEL Naz
Published: December 2020

Bu makalede 19.yy süresince yazılmış olan viyola sonatları teknik ve müzikal açıdan incelenmiştir. Romantik dönem hakkında genel bilgiler verilmiş, klasik dönem-romantik dönem karşılaştırması yapılmış, sonat formu incelenmiş ve temel yaylı çalgı teknikleri kısaca açıklanmıştır. Yehudi Menuhin, William Primrose ve Ivan Galamian gibi önemli keman-viyola pedagoglarının çalışmalarına yer verilmiş, temel yaylı çalgı tekniklerinin belirli pasajlar üzerinde kullanımlarına yönelik yorumculara tavsiyelerde bulunulmuştur. Edinilen bilgilerin ışığında yorumculara faydalı olunması gözetilerek yay teknikleri ile ilgili pratik uygulamalarda bulunulabilecek tablolar hazırlanmıştır. 19.yy boyunca viyola için yazılmış veya diğer enstrümanlardan transkripsiyonları yapılmış olan sonatlardan Felix Bartholdy Mendelssohn “Sonata for Viola and Piano in C minor”, Henri Vieuxtemps “Sonata for Viola Op. 36”, Franz Schubert “Sonata for Arpeggione”, Mikhail Glinka “Sonata for Viola and Piano”, Anton Rubinstein “Sonata for Viola and Piano”, Johannes Brahms “Sonata for Viola and Piano Op.120 No.1” ve “Op.120 No.2” çalışmanın odak noktası olarak saptanmıştır. Belirtilmiş olan sonatlardan alınmış kesitler üzerinde sol el teknikleri için uygulamalara yer verilmiştir. Sağ el teknikleri için ise genel bilgiler verilerek sonatlar içerisinde kullanılabilecekleri pasajlara örnekler gösterilmiştir. Son olarak seçilmiş pasajlar üzerinde eserin icrasını zenginleştirebilmek amaçlı icracılara yorum önerileri sunulmuştur. Çalışmanın amacı bu repertuvarı seslendirmek isteyen viyola icracıları için yararlı bir kaynak oluşturmaktır. Bu araştırmanın oluşturulması sırasında yerli ve yabancı yayınlardan faydalanılmıştır.
Decision Support System for Finding an Optimal Postquantum Key Encapsulation Mechanism. Part 1. Decision Making Algorithm
Authors: Vlasenko A. , Evsyukov M. , Putyato M. , Makaryan A.
Published: December 2020

The purpose of this study is to develop a decision support system that will allow, for the given conditions of using the cryptosystem, to choose the most appropriate implementation of the post-quantum key encapsulation mechanism. In the first part of the series of articles, the problem of choosing the optimal implementation of the post-quantum key encapsulation mechanism is presented as a multi-criteria choice problem. Decision-making methods that are best applicable to the problem under consideration have been determined. An algorithm for solving the problem has been developed. A web application has been designed that implements the functionality of a decision support system.
Mehr sozioökonomische Ungleichheit durch Corona? Wie das Virus die Verteilungsverhältnisse beeinflusst
Authors: Butterwegge Christoph
Published: December 2020

Auf drei Ebenen wird untersucht, ob die Covid-19-Pandemie sozial egalisierend, verteilungspolitisch indifferent oder eher polarisierend gewirkt hat. Es geht dabei um die Wirkungen der Pandemie selbst, die von Schutzmaßnahmen wie einem Lockdown verstärkte Rezession sowie die staatlichen Finanzhilfen und Rettungsschirme.
Theoretical Aspects of Future Social Workers’ Professional Self-Development
Authors:   Dragomanov   National Pedagogical University, Kyiv, Ukraine, Karpenko Olena Karpenko Olena , Ostapchuk Victoria ,   Dragomanov National Pedagogical University, Kyiv, Ukraine
Published: December 2020

The article defines and reveals the essence of the concepts "professional self-development", "self-development", presents the essence and ways of forming professional self-development in the future social worker; "self-education" as a component in the development of the future social worker is revealed and substantiated. The authors point out that the most important thing in personal development is consistency. The authors present the ways of forming self-development of future specialists’ in the social sphere in the conditions of professional higher education institutions by means of extracurricular activities; theoretical directions of forming students’ professional self-development by use of forms and methods of extracurricular activity are given.
Plotless Ballets on the Stage of Ukrainian Theaters (1960-1970s)
Authors:   Kiev National University of Culture and Arts, Kiev, Ukraine, Lukyanenko Ekaterina
Published: December 2020

The article examines the peculiarities of staging plot-free ballets on the stages of Ukrainian theaters in the 1960s and 1970s on the example of performances by A. Shekera, O. Segal and I. Chernyshov. The semantic essence of the concept of "plotless ballet" is specified and the process of formation of this type of ballet performances in historical retrospect is traced. The specifics of plotless ballets as a unique type of performance in the Ukrainian ballet theater of the 60-70s of the XX century are characterized. and the contribution of choreographers to the development of artistic and figurative forms of ballet art of Ukraine is determined. It is revealed that in the works of the leading Ukrainian choreographers of the mentioned period the author's comprehension of the plastic-intonational content in the dialogue of music and choreography was embodied in many ways. The main choreographers of Ukrainian opera and ballet theaters, representing productions in which choreography is raised to the highest level of poetic generalization, helped to expand the horizons of Ukrainian choreography, to determine the main directions of national ballet in the second half of the twentieth century.
Carbon neutral University of Eastern Finland (UEF) by 2025
Authors: Ovaska Tuulevi
Published: December 2020

Reducing environmental harm aims to build a responsible and sustainable future. The University of Eastern Finland (UEF) promotes the United Nations’ (UN) Sustainable Development Goals (SDGs) in all its operations. UEF's goal is to become carbon neutral by 2025. The Library has staff members in two of the university's six working groups that chart the carbon emissions of the university and a steering group member.