bluuebunny/crossref_metadata_2025 huggingface dataset:
HOW CHILDREN PERCEIVE FOOD ADVERTISEMENTS ON TV: A SEMIOTICS ANALYSIS
Authors: Ma’rifah Ulfatul
Published: December 2020

In digital era, advertising can reach people wider than before. Children are one of targeted consumers for food advertisements. Everyday children are shown by food advertisements while they are watching TV. These advertisements functioned both to deliver and utilize a wide variety of meaning, symbols and message called semiotics. Moreover, children are treated with variety of signs and symbols, but they have different ways of interpreting them.. This study investigated ten children (8-to-10 years old) to know about their perception towards food advertisements. Using semiotics analysis researcher interviewed children about ten food advertisements that are broadcasted on TV. The result shows that most of children can perceive well all signs and symbols communication conveyed by food advertisement. The most influence symbol that affected children to try product is food image that are usually performed in zoom mode and slow motion. Children also get understanding message, culture and value conveyed by food advertisements in positive side. It can support children to behave positively. While brand personal get les attention that brand character of food advertisements which children prefer more cartoon character as a brand mascot of food product.
Il cane dell’ortolano de Lope de Vega según Ameyden, Gasparetti y Fiorellino
Authors: Trambaioli Marcella
Published: December 2020

Lope de Vega’s posthumous fame in Italy differs according to the ages: if in the 17th century he was really appreciated and his dramas and comedies were often translated, adapted and represented, nowadays he’s practically absent in the dramatic production and there are just a few titles available in Italian translation. This also happens for his masterpieces. The case of El perro del hortelano is quite interesting, since there are three versions, by Ameyden, Gasparetti and Fiorellino, belonging to different periods and different conceptions of translation and literary taste. This article tries to analyse them in a comparative perspective.
LOCAL WISDOM OF NIAS TRADITION ORAHU
Authors: Bu’ulolo Boiolifu
Published: December 2020

Orahu is a tradition of deliberation which is well known in the life system of the people of South Nias, especially in the areas of Maniamölö, Onolalu, To'ene and Mazinö. Orahu is carried out in every important activity in the community, for example discussing problems related to the village, death events, weddings, Fa'ulu and Mambu Ana'a parties (ceremony to increase social status or traditional parties) and others. Orahu to a large extent is called Orahua Mbanua, and is usually performed at Ewali Sawolo or Ewali Orahua (the courtyard in front of the house of the most influential nobleman or Balö Ji'ulu). The Orahua Mbanua was followed by the Si'ulu (nobles), Si'ila (traditional leaders) and Ono Mbanua (the whole community). This research was aimed at describing as well as revealing the local wisdoms of Orahu. This research applied qualitative descriptive method. The data in this study were collected using interview techniques and literature study. The research results shows that Orahu tradition emphasizes on the solidarity and wise decision taking which become a very important aspect in the life system of Nias people. It was in this open forum that all village problems were discussed, and decided how to handle them.  In ancient times, Orahu was also used as a trial and for determining punishment for violators of village customs. Orahu is usually done at the bale (village meeting hall), but to a lesser extent, it can also be carried out at home.
PHILOSOPHICAL MEANINGS OF TRADITIONAL CUISINE RENDANG MINANGKABAU AS A CULTURAL HERITAGE OF INDONESIA
Authors: Tanjung Nita Novianda , Manugeren M. , Purwarno Purwarno
Published: December 2020

AbstractThis research is related to the philosophical meanings of traditional cuisine Rendang Minangkabau as a cultural heritage of Indonesia. The research is conducted by means qualitative descriptive. The theory used is taken from the philosophy. Philosophy is the mother of all the sciences that have material objects and formal objects, objects the material is the mind while the object formal philosophy of science is truth, goodness and beauty in a manner dialogue. (Syafiie, 2010). This study explained the meanings of the philosophy in Rendang Minangkabau cuisine. Rendang is revered in Minangkabau culture as an embodiment of the philosophy of musyawarah, discussion and consultation with elders. The results show there are four meanings in each of the ingredients Rendang Minangkabau: Meat (dagiang) symbolizes Niniak Mamak (paman) and Bundo Kanduang (ibu) refers to the traditional clan leaders (respect for the parents). The coconut milk (karambia) symbolizes the Cadiak Pandai refers to the intellectuals (learning). The chilli (lado) symbolizes Alim Ulama refers to the religious leaders (uplifting Islamic laws). The spice mixture (pemasak) symbolizes the rest of Minangkabau society refers to the each individual (unity). This philosophy was indeed made to maintain the integrity of the Minang community in West Sumatra and also as a cultural heritage of Indonesia.
PERAN BPK SEBAGAI LEMBAGA PENGAWAS EKSTERNAL PENGELOLAAN KEUANGAN NEGARA
Authors: Kaldera Nawang Xalma , Aulia Muthi , Faza Hani Adila
Published: December 2020

Salah satu upaya untuk mewujudkan pemerintahan yang bersih dan bebas dari korupsi, kolusi, dan nepotisme (KKN) adalah dengan dibentuknya Badan Pemeriksa Keuangan sebagai lembaga pengawas yang independen. Artikel ini bertujuan untuk menjelaskan peran dan fungsi BPK terhadap keuangan negara, serta sumber dari kewenangan yang dimilikinya.

Penulis menggunakan metode penelitian yuridis normatif dengan studi kepustakaan. Hasil penelitian menunjukkan bahwa BPK melakukan fungsi pengawasannya secara represif dan eksternal, serta berperan besar dalam mendeteksi dan meminimalisir segala kelemahan yang terdapat dalam pengelolaan keuangan negara. BPK sebagai lembaga pengawas yang sumber kewenangannya berasal dari amanat UUD 1945 berfungsi untuk mengevaluasi pengelolaan keuangan negara dan mengurangi kerugian keuangan negara.
PENGARUH KINERJA KEUANGAN DAERAH TERHADAP IPM KABUPATEN/KOTA DI JAWA BARAT
Authors: Zulkarnain Zulkarnain
Published: December 2020

Penguatan SDM Indonesia menuju SDM unggul menjadi pekerjaan rumah besar Negara dan seluruh bangsa Indonesia. Kualitas SDM Indonesia dipandang masih rendah. Penelitian ini berupaya untuk menguji pengaruh kinerja keuangan daerah yang diproksikan dengan rasio derajat desentralisasi fiskal, rasio efektivitas PAD, dan rasio belanja modal terhadap IPM kabupaten/ kota di Jawa Barat. Metode penelitian yang digunakan adalah dengan pendekatan kuantitatif. Pengujian hipotesis dilakukan dengan menggunakan uji regresi linier berganda melalui alat bantu SPSS ver. 26. Hasil pengujian dan analisis data menemukan bahwa secara parsial rasio derajat desentralisasi fiskal dan rasio efektivitas PAD berpengaruh positif dan signifikan terhadap IPM. Sedangkan rasio belanja modal tidak berpengaruh signifikan terhadap IPM. Secara simultan ketiga variabel independen memiliki kemampuan menjelaskan variasi variabel dependen yaitu IPM sebesar 57,0%, sedangkan sisanya 43,0% dijelaskan atau dipengaruhi oleh faktor lain di luar variabel penelitian yang digunakan.
Faktor-Faktor Yang Mempengaruhi Keputusan Pembelian Air Mineral Dalam Kemasan Merek Dharma (Studi Kasus pada Konsumen CV. Bahana Tirta Alam Maritim di Kabupaten Sumbawa Besar)
Authors: Abdurrahman Abdurrahman
Published: December 2020

Penelitian ini bertujuan untuk mengetahui: 1) pengaruh kualitas produk terhadap keputusan pembelian AMDK Merek Dharma. 2) pengaruh harga terhadap keputusan pembelian AMDK Merek Dharma. 3) pengaruh promosi terhadap keputusan pembelian AMDK Merek Dharma. 4) pengaruh kualitas produk, harga, dan promosi secara simultan terhadap keputusan pembelian AMDK Merek Dharma. Model yang digunakan dalam analisis data adalah uji instrumen penelitian, uji asumsi klasik, analisis regresi berganda, dan uji hipotesis. Alat analisis yang digunakan dalam penelitian ini adalah SPSS 16. Data yang digunakan yaitu data primer dan data skunder dengan pengambilan sampel secara purposive sampling. Hasil penelitian menunjukan bahwa 1) kualitas produk berpengaruh positif dan signifikan yang di tunjukan dengan nilai  untuk variabel kualitas produk ialah sebesar  0.000 dimana nilai ini < 0,05. 2) Harga berpengaruh positif tetapi tidak signifikan yang ditunjukan dengan nilai untuk variabel harga ialah sebesar 0.820 dimana nilai ini > dari 0,05. 3) Promosi berpengaruh positif dan signifikan yang ditunjukan dengan nilai untuk variabel promosi ialah sebesar 0.005 dimana nilai ini < 0,05. Secara simultan kualitas produk, harga, dan promosi mempengaruhi keputusan pembelian sebesar 31,0%.
Analisis Pengaruh Kepercayaan Dan Keamanan Terhadap Keputusan Pembelian Barang Secara Online
Authors: Jefryansyah Jefryansyah , Muhajirin Muhajirin
Published: December 2020

ABSTRACT

Seiring dengan kemajuan teknologi informasi, diikuti oleh semakin mudah dan murahnya akses dan paket internet, maka jumlah pengguna internet di Indonesia mengalami peningkatan yang sangat pesat. Perkembangan teknologi informasi ini membuat perubahan perilaku bertransaksi dikalangan masyarakat, yang dari dulunya offline menjadi bertransaksi secara online. Tujuan yang ingin di capai adalah untuk meningkatkan kepercayaan serta keamanan yang di berikan oleh situs jualan online agar minat beli dari konsumen itu sendri meningkat. Data yang digunakan adalah data primer. Sampel penelitian berjumlah 130 responden mahasiswa stie bima yang pernah berbelanja pada toko online. Alat analisis dalam penelitian ini menggunakan regresi linier berganda. Hasil penelitian ini menujukan bahwa kepercayaan berpengaruh positif dan signifikan terhadap keputusan pembelian barang secara online, keamanan berpengaruh positif dan signifikan terhadap keputusan pembelian barang secara online dan terdapat pengaruh positif dan signifikan kepercayaan dan keamanan terhadap keputusan pembelian barang secara online. Sehingga semakin tinggi kepercayaan konsumen, serta semakin tinggi tingkat keamanan yang di berikan, maka semakin tinggi pula keputusan pembelian barang secara online.

 

Keywords : trust, security, purchase decisions
Pengaruh Model Kooperatif Tipe Course Review Horay dalam Pembelajaran Tematik Terpadu di Sekolah Dasar
Authors: Budianti Indah , Reinita Reinita
Published: December 2020

Penelitian ini bertujuan untuk mengetahui pengaruh model Kooperatif Tipe Course Review Horay (CRH)  terhadap hasil belajar peserta didik dalam pembelajaran tematik terpadu di kelas V SDN Gugus V Kecamatan Sungai Tarab Kabupaten Tanah Datar . Penelitian ini merupakan penelitian kuantitatif dengan jenis penelitian eksperimen dan desain penelitian quasi eksperimen. Pengambilan data sampel dilakukan dengan teknik purposive sampling. Sampel penelitian ini berjumlah 40 orang dengan populasi sebanyak 74 orang. Instrumen yang digunakan dalam menggumpulkan data berupa tes objektif dengan bentuk pilihan ganda. Berdasarkan hasil analisis data menggunakan t-test, diperoleh thitung > ttabel yakni 2,84 > 1,72 pada taraf signifikan 0,05 yang berarti Ha diterima. Dengan demikian, terdapat pengaruh model Kooperatif Tipe Course Review Horay (CRH) dalam pembelajaran tematik terpadu di kelas V SDN Gugus V Kecamatan Sungai Tarab Kabupaten Tanah Datar.
Ukuran Penyebaran Data (Simpangan Rata-rata)
Authors: Devonius Samuel Gibson , Trihartanto R.Arie , Tarigan Theresia Meri
Published: December 2020

The size of the spread is a measure that states how far the actual observed value deviates from or differs from the central value. The average deviation of the absolute value of the deviation of each observed value against the average divided by the number of controls.
PENDIDIKAN AGAMA ISLAM PADA ERA DISRUPTIF DI SEKOLAH BERJEJARING SEKOLAH ISLAM TERPADU
Authors: Wibowo A.M.
Published: December 2020

Tulisan ini merupakan bagian buku yang bertujuan mengkaji implementasi dan internalisasi nilai-nilai Pendidikan Agama Islam pada sekolah berjejaring dengan Jaringan Sekolah Islam Terpadu (JSIT) di dalam menghadapi era disruptif. Implementasi dan internalisasi pendidikan agama Islam ini meliputi implementasi kurikulum Pendidikan Agama Islam dan internalisasi nilai-nilai pendidikan agama Islam, baik di dalam pembelajaran maupun di luar pembelajaran, baik di sekolah maupun di asrama (boarding school).
Webcam-based online eye-tracking for behavioral research
Authors: Yang Xiaozhi , Krajbich Ian
Published: December 2020

Experiments are increasingly moving online. This poses a major challenge for researchers who rely on in-lab techniques such as eye-tracking. Researchers in computer science have developed web-based eye-tracking applications (WebGazer; Papoutsaki et al., 2016) but they have yet to see use in behavioral research. This is likely due to the extensive calibration and validation procedure, inconsistent temporal resolution (Semmelmann & Weigelt, 2018), and the challenge of integrating it into experimental software. Here, we incorporate WebGazer into a widely used JavaScript library among behavioral researchers (jsPsych) and adjust the procedure and code to reduce calibration/validation and improve the temporal resolution (from 100-1000 ms to 20-30 ms). We test this procedure with a decision-making study on Amazon MTurk, replicating previous in-lab findings on the relationship between gaze and choice, with little degradation in spatial or temporal resolution. This provides evidence that online web-based eye-tracking is feasible in behavioral research.
“Why MANtoring is not the solution. A Rebuttal to ‘The association between early career informal mentorship in academic collaborations and junior author performance.’”
Authors: Mabry Patricia L. , Dasgupta Nilanjana , Moss-Racusin Corinne Alison , Park Lora E , Pestilli Franco , Rattan Aneeta , Ressl Susanne , Smith Jessi Lyn , Yan Xiaoran , Diekman Amanda , Fryberg Stephanie A. , Harackiewicz Judith M. , Ledgerwood Alison , Murphy Mary C , Perry Sylvia , Ratliff Kate A. , Sekaquaptewa Denise , Thoman Dustin B
Published: December 2020

The findings of AlShebli Makovi & Rahwan1 highlight an endemic problem in science: co-authoring with men is associated with greater numbers of citations for junior scientists than co-authoring with women. The reasons for this likely stem from a long history and culture in science where White, straight, cisgender men are the dominant force. Under the authors’ assumption that authorship is equal to mentorship (a notion we criticize below), the reported citation disparity by coauthor gender for junior scientists may simply reflect that under the current status quo there are more barriers for women to establish strong mentorship programs and secure resources to support their mentees compared to men. In other words, citation disparity is the problem, not the solution as proposed by the authors. We argue that the citation disparity is uncorrelated with mentorship and the quality of the publication. Unfortunately, AlShebli Makovi & Rahwan err in their publication in two ways: they define mentorship as co-authorship (albeit with conditions), and they prescribe the problem as a solution suggesting that junior scientists, especially women, ought to be mentored by men - a proposal we have aptly named “MANtoring”. These faulty interpretations and conclusions reveal a broader problem in scholarship: failure to critically examine structural biases and assumptions when evaluating and interpreting data showing disparity. Much work is needed to improve the culture of science and to provide a more fair and equitable environment for individuals of any background (women in this case, but a similar reasoning would apply to people historically marginalized based on gender, race, sexuality, class, and other dimensions) to thrive2. The AlShebli et al article is a wakeup call to authors in all disciplines to take greater care in interpreting and acting on their disparity data. Failure to do so could have catastrophic effects on science including the irony of exacerbating the very problems researchers are attempting to address.
A Comparative Study of Electron and Ion Beam Induced Charge Imaging Techniques in CMOS Failure Analysis
Authors: Chan D.S.H. , Kolachina S. , Ong V.K.S. , Phang J.C.H. , Osipowicz T. , Sanchez J.L. , Watt F.
Published: December 2020

The Ion Beam Induced Charge (IBIC) imaging technique is compared with the conventional Electron Beam Induced Current (EBIC) imaging. The IBIC images were found to be strongly dependent on the ion beam energy and ion beam induced degradation. EBIC images are influenced by overlying metal layers while in the case of IBIC, the choice of ion type and energy determine whether the overlying metal layers influence the IBIC image or not. Ion beam induced degradation, an undesirable feature, was found to be improving images in certain cases.
Characterization of Unfilled Tungsten Plugs on a 0.35μm CMOS Multilevel Metallization Process
Authors: Sur H. , Bothra S. , Strunk Y. , Hahn J.
Published: December 2020

An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.
Pin-Point Transmission Electron Microscopic Analysis Applied to Off-Leakage Failures of a Bipolar Transistor in 0.5μm BiCMOS Devices
Authors: Okihara M. , Tanaka H. , Hirashita N. , Nakamura T. , Okada H. , Hijikata Y. , Shimoda K.
Published: December 2020

Pin-point (specific area) planar transmission electron microscopy (TEM) analysis has been improved to study process-induced defects in recent very large scale integrated (VLSI) devices. The specimens are prepared by a combination of marking failure sites with focused ion beam (FTB) equipment and planar TEM specimen preparation technique. This method provides not only planar observation of localized failures with an accurate observation with high positioning accuracy but also wide range of observable area which is feasible to carry out some application techniques associated with TEM. In particular, it is found to be a powerful method to identify the nature of crystalline defects which cause the failures. This work presents the detailed procedure and demonstrates its successful applicability via studying a leaky bipolar transistor in 0.5μm BiCMOS devices (one failure of more than 4500 transistors). The results clarify the presence of stacking faults, formed during epitaxial growth, between collector and emitter regions in the specific transistor with resistive collector-emitter leakage current.
Contactless Testing of Pulse Propagation in IC’s - A Comparison Between OBIC and Captive-Coupling Detection Techniques
Authors: Hempel K. , Sargsjan G. , Bergner H.
Published: December 2020

Internal IC probing has become an important tool for failure analysis and defect localization. Optical stimulation of logical transients enables the investigation of electrical pulse propagation through IC-regions which are not directly connected to an external input. The signal detection should be as directly as possible to avoid misinterpretation of experimental results, especially for time-resolved measurements. This paper describes the implementation of a capacitive coupling technique on a laser scanning microscope and on a needle prober. Results of static and time-resolved measurements are presented and compared to those obtained by OBIC measurements.
Electron-Beam Analysis of the Turn-On Speed of Grounded-Gate NMOS ESD Protection Transistors During Charged Device-Model Stress Pulses
Authors: Meneghesso G. , Zanoni E. , Luchies J.R.M. , Kuper F.G. , Mouthaan A.J.
Published: December 2020

A commercial Electron-beam measurement set-up has been applied to study triggering and turn-on of NMOS ESD protection transistors. Using this technique turn-on times in the sub halve nanosecond range could be determined for the first time. The measured transient behaviour could be described accurately using SPICE simulations. The measurements have been used to explain the CDM failure mode characteristics of the NMOS protection transistor.
Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration
Authors: Perdu P. , Perez G. , Dupire M. , Benteo B.
Published: December 2020

To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.
AC Hot-Carrier Effects Characterization by Circuit Modification Using Focused Ion Beam
Authors: Yoo Yong-koo , Lee Chong-ha , Lee Jung-hwan
Published: December 2020

Focused Ion Beam (FIB) is used to modify a ring-oscillator circuit to enable the direct characterization of AC hot-carrier effects. Probe access to internal device nodes is necessary to find out the amount of individual device degradation resulting from AC hot-carrier stress. The circuit modification on an existing wafer by FIB enables the direct measurement of individual device in the circuit before and after AC hotcarrier stressing without resorting to new mask sets and silicon wafer processing for new hotcarrier reliability test circuits that can provide realistic stress voltage waveform. Small pads produced by FIB have small acceptable impact on the stress waveform of the circuit and they still allow accurate measurement of the internal device nodes. FIB’s ‘cut and paste’ technique is used to form these probe pads. Some suggestions are made for the proper FIB work in this paper. The results of AC hot-carrier tests with the circuit modified by FIB are also presented with some illustrative figures.
Local Electrical Thickness-Mapping of Thin Oxides with Conducting Atomic Force Microscopy
Authors: Olbrich Alexander , Ebersberger Bernd , Boit Christian
Published: December 2020

In this work, we introduce Conducting Atomic Force Microscopy (C-AFM) as a novel technique for the determination of the local effective electrical oxide thickness with a lateral resolution of a few nanometers and a thickness resolution in the sub ångström range. In this technique the conductive tip of an AFM, which is in mechanical contact with the bare oxide surface, is used as metal electrode to define a local MOS structure with nanometer lateral extension. Oxide thickness determination is done by fitting the local I-V curves to the well known Fowler Nordheim tunneling equation with a thickness sensitivity in the sub-ångström range. In addition, tunneling current images at constant applied voltage can be obtained simultaneously to the oxide surface topography. We present a scheme which allows the conversion of the tunneling current images into maps of the local electrical oxide thickness. Several examples demonstrate the versatile and far-reaching application of C-AFM to R&D and failure analysis
A Novel Technique for Detecting High Resistance Fault Using Electroplating
Authors: Wang H. S. , Chou J. H. , Hung H. C. , Lui H. H. , Yang W. H. , Sun L. C. , Lin C. J.
Published: December 2020

This paper will demonstrate a new copper (Cu) electroplating technique [1] for accurately isolating high resistance fault locations with resistance below K-order ohms. This phenomenon is achieved by having different electric field intensity leading to different copper deposition rate on the sample surface. From experiments, the interface between the thicker electroplated and thinner electroplated copper layer on the sample surface accurately indicates the high resistance fault location. Also, Optical Microscope (OM) and Focused Ion Beam (FIB) are used to inspect the localized fault site of the electroplated sample. Furthermore, this technique, Electro-Plating Localization Method (EPLM), can process several samples or the entire wafer at the same time. In addition, this technique can be applied in the fully open cases of test vehicles with logical circuit as voltage contrast localization method.
Detecting the 10 Angstroms That Change MEMS Performance
Authors: Schutte Erika , Martin Jack
Published: December 2020

An ellipsometry based measurement protocol was developed to evaluate changes to MEMS sensor surfaces which may occur during packaging using unpatterned test samples. This package-level technique has been used to measure the 0-20 Angstrom thin films that can form or deposit on die during the packaging process for a variety of packaging processing conditions. Correlations with device performance shows this to be a useful tool for packaged MEMS device and process characterization.
Investigation of Low-Energy Focused Ion Beam Milling for Scanning Capacitance Microscopy Sample Preparation
Authors: Fillmore David K. , Wang Shixin
Published: December 2020

Scanning capacitance microscopy (SCM) has become a valuable tool for failure analysis in integrated circuit manufacture. The ability to perform two-dimensional dopant distribution analysis on small, specific structures has been hampered, however, by the imprecision of current polishing techniques. Utilization of focused ion beam (FIB) milling instrumentation to perform precise cross sectioning of specific structures is preferable to manual polishing, although SCM data has not been forthcoming, due in part at least to the thicker amorphous silicon layer. This work examines the thickness of the amorphous silicon layers generated by various sample preparation methods, including conventional polishing, FIB milling, and low-energy FIB milling. In addition, this work provides SCM comparisons of the low energy FIB milling preparation procedure and conventional polishing.
Low-K Time Dependent Dielectric Breakdown Failure Analysis Utilizing SEM Image Comparison for Defect Isolation
Authors: Demarest J. , Chanda K. , Dunn D. , Wang Y.
Published: December 2020

This paper describes a case study of a back end of the line low-k time dependent dielectric breakdown failure analysis. Due to the extremely large size of the stressed test structure, isolation of the defect and root cause determination can be quite difficult. In this particular study the defect was determined to lie in an approximately 100 um2 area and top down SEM inspection did not indicate any obvious defect. In an effort to further isolate the defect, an image comparison analysis was performed to highlight the differences between the fail area and an assumed good area of the test structure. A local area within the failing region was identified and imaged in cross section via TEM. The source of contamination which caused the fail was identified and appropriate process actions were implemented to remove the defect mechanism.
Printed Circuit Board Propagating Faults
Authors: Slee Daren T.
Published: December 2020

This paper is a review of propagating faults in printed circuit boards (PCBs) from the perspective of using the resulting burn and melted copper patterns to identify likely locations of fault initiation. Visual examination and x-ray imaging are the main techniques for examining PCB propagating faults. Once the likely fault initiation location has been identified, fault tree analysis can be used to determine the root cause for fault initiation. The paper discusses the mechanisms by which PCB propagating faults occur. The method of determining the likely area of initiation of the fault using visual examination of the PCB burn pattern, x-ray imaging, and the layout artwork for the PCB is discussed. The paper then goes on to discuss possible root-causes for the initiation of PCB propagating faults and some of their considerations.
Enhanced Pixel by Pixel Emissivity Correction for Thermal Microscopy
Authors: Goh S.H. , Yim K.H. , Phang J.C.H. , Balk L.J.
Published: December 2020

In thermal microscopy, temperature error arises whenever a constant emissivity value is assumed for different materials. In this paper, we propose a new approach to eliminate these undesirable effects resulting from the ambiguous surface emissivity of materials. This method enables the compensated (true) temperature distribution of a device under test to be obtained from the measured temperature image. A transfer function that relates the measured and true temperature is formed to estimate the actual temperature distribution of a biased device to an accuracy of approximately 0.3-0.7K.
Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits
Authors: Ray Valery
Published: December 2020

Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.
Front-End Failure Analysis of Integrated Circuits Using Scanning Capacitance Microscopy
Authors: Huang M.C. , Lin C.T. , Lin J.C.
Published: December 2020

Scanning capacitance microscopy (SCM), a powerful technique to identify front-end defects, is also helpful in understanding failure mechanisms. This article discusses three front-end doping failure examples that were clearly identified by SCM analysis. The first example was NMOS leakage between drain and source. SCM images showed that N+ junction distortion resulted in effective channel length shortage. The second one was by-field SRAM failure with power leakage. From SCM images, it is clarified that P-well was directly short to P+ in bad die and slight P-well boundary shift to P+ was observed in good die. The third example was regarding low threshold voltage failure analysis. It illustrates that combination of plane-view and cross-sectional SCM analysis could help to diagnose the failure mechanism. The resolution and precision in SCM is better than that in chemical etching combined with SEM technique.
SEM and AFM Investigation for Accurate Measurements of 193-nm Resist Profiles
Authors: Reiche Rainer , Bartkowiak René , Heller Marcel , Rosenkranz Rüdiger
Published: December 2020

SEM analysis of 193-nm photoresist profiles after cross section is seen to be critical because of the shrinkage of the photoresist material during electron beam exposure. With a combination of AFM and SEM investigations on AuPd sputter prepared samples an averaged shrinkage behaviour of height and width of resist lines of varying geometry can be quantitatively determined. This helps to a more accurate determination of resist line profiles.
Enhancement Method to Improve the Accuracy of Intermetallic Area Inspection on the Bonding Pad through Chemical and Mechanical Removal Process
Authors: Kongsubto Prong , Kongwudthiti Sirarat , Yousoom Yupa , Lochingchairit Rit , Kongjaroon Pakorn
Published: December 2020

In this work, we proposed new sample preparation technique (combination of mechanical and chemical method) for inspection of intermetallic bondballs. The use of this new method will provide more accurate estimation of the percentage of intermetallic formation area. The procedure to perform the sample preparation is: 1. Grind unit from the bottom side of the package until the bulk silicon die is visible. 2. Dipping the unit into KOH 50% solution at 100 to 110 degree C to remove the bulk silicon 3. Dip unit in HF : DI water (1:10) at room temperature to remove any diffusion layers, metal lines, barrier metal and inter-dielectric layers. Then clean the unit by using Hydrogen Peroxide (H2O2) 4. The images are imported into Image-Pro software to calculate the percentage values.
FIB Backside Circuit Modification at the Device Level, Allowing Access to Every Circuit Node with Minimum Impact on Device Performance by Use of Atomic Force Probing
Authors: Schlangen R. , Kerst U. , Boit C. , Schömann S. , Krüger B. , Jain R. , Malik T. , Lundquist T.
Published: December 2020

Direct measurements of circuit node signals without changing the performance of the circuitry are essential in modern FA but often impossible for recent IC technologies. This paper shows new methods, based on FIB backside circuit edit, allowing access to every existing circuit node at the device level, and discusses options for probing and discrete characterization.
STI Punch-through Degradation Related Standby Current Failure in HTOL Test – A Case Study
Authors: Chen Wen-Rong , Tseng Wei-Chun , Lee Yi-Ju , Liu Kuang-Wen , Kuo Li-Kuang , Yin Shaw , Lu Chih-Yuan
Published: December 2020

This report summarizes the analysis results of 0.13µm technology 256Mbits NBit HTOL (High Temperature Operational Life) induced standby current failures caused by STI (Shallow Trench Isolation) punch through induced leakage degradation. Electrical analysis, EMMI and stress experiment on test devices are employed to identify the failure mechanisms, root causes, and corrective solutions. From this study, improvements could be achieved by circuit layout modification.
Investigation of Bond-Pad Etching Chemistries for Determination of Probe/Bonding Related Sub-Pad Cracks
Authors: Korchnoy Valentina
Published: December 2020

Bond-pad integrity directly affects the performance of microelectronic devices. Bond-pad cracking and the related sub-pad cracking of Inter-Metal Dielectric (IMD) may introduce a high reliability risk and cause units to fail at environmental stress. Bond-pad cracks may be initiated by probing during wafer sort and the wire bonding process during assembly. This paper presents a comparative analysis of the various chemistries used for exposure and decoration of pad cracks. The investigation showed that a tri-iodine etch provides clean and artifact-free exposure of the TiN barrier layer of the pad and is the best (of the methods tried herein) for pad crack observation.
Wireless Advanced FA Tool (WAFT)
Authors: Chee Thim Fai , Zhang Mo
Published: December 2020

The existing failure analysis (FA) tool used in the manufacturing was unable to support multiple input multiple output (MIMO) analysis and it has poor user interface capability. The tool used by hardware engineers and design engineers is capable for all radio frequency (RF) analysis including MIMO, but yet it is an extremely expensive tool with rigid interface due to the need for automation. Wireless advanced FA tool (WAFT) was then designed, developed, and deployed as a single solution to FA engineers to perform all the RF analysis including MIMO in a user friendly interface and affordable setup. This article provides information on design planning, application, validation, and deployment of WAFT as well as on transmit quality and receive quality evaluation. WAFT has been validated in providing accurate measurement by benchmarking with the existing tools. WAFT provides the interactive controllability and comprehensive signal analysis capability including MIMO needed for FA.
Pseudo-Soft Defect Localization
Authors: Tangyunyong Paiboon , McFarland Rick , Flores Richard S. , Pearson Sean , Sanchez Marco O.
Published: December 2020

In this paper, we describe a modified soft defect localization (SDL) technique, PSDL (pseudo-soft defect localization), to localize pseudo-soft defects in integrated circuits (ICs). Similar to soft defects, functional failures due to pseudo-soft defects are sensitive to operating parameters (such as voltages, frequencies and temperatures) and/or laser exposures. Pass/fail states in pseudo soft defect failures are, however, not fully reversible after laser exposure or after changing operating parameters. PSDL uses the methodology of conventional SDL and/or TIVA in combination with a new scanning scheme for defect localization. An example will be shown to demonstrate the use of this technique to localize pseudo-soft defects.
Back-End-of-Line Quadrature-Clocked Voltage-Dependent Capacitance Measurements
Authors: Polonsky Stas , Solomon Paul , Ketchen Mark , Shiling Ernesto , Economikos Laertis , Bhushan Manjul
Published: December 2020

We compare different dc current-based integrated capacitance measurement techniques in terms of their applicability to modern CMOS technologies. The winning approach uses quadrature detection to measure mutual Front-End-Of-Line (FEOL) and Back-End-Of-Line (BEOL) capacitances. We describe our implementation of this approach, Quadrature-clocked Voltage-dependent Capacitance Measurements (QVCM), and its application to 45 nm node BEOL: wire capacitance variability measurements for analog design, and capacitive test structure to measure the effect of metal pattern density on Chemical-Mechanical Polishing (CMP) and Reactive Ion Etching (RIE).
Decapsulation Techniques for Cu Wire Bonding Package
Authors: Meng Dongmei , Rupley Joe , McMahon Chris
Published: December 2020

This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.
Effectiveness of Nanoprober in Detecting Single/Multiple Bit Flash Data Gain & Data Loss Failures
Authors: Medikonduri Rajesh
Published: December 2020

This paper discusses the physics, definitions, and nanoprobing flow of a flash bit memory. In addition, a case study showing the effectiveness of nanoprobing in detecting the Single Bit Fail Data Gain and Data Loss in Flash Memory is also discussed. The paper also includes cases where no passive voltage contrast was observed at the SEM and no leakage was observed at AFM, yet the units failing SBF DG, SBF DL and depletion, were detected by nanoprobing of the single bit. The major finding of this paper is a way to resolve data gain, data loss, and depletion failures of flash memory by nanoprobing procedure, despite no PVC seen at the SEM and no leakage seen at the AFM.
Development of Laser-Based Variation Mapping Techniques – Another Way to Increase the Successful Analysis Rate on Analog & Mixed-Mode ICs
Authors: Sienkiewicz Magdalena , Sanchez Kevin , Cattaneo Luigi , Perdu Philippe , Firiti Abdellatif , Crepel Olivier , Lewis Dean
Published: December 2020

The failure localization on analog & mixed mode ICs in functional mode (AC signals) has become more and more challenging in the last few years. Due to an increasing integration and complexity of these devices, the number of defects, especially those named “soft”, raised considerably. The classical Dynamic Laser Stimulation (DLS) techniques showed some limitations when applied to analog & mixedmode ICs. The SDL (Soft Defect Localization) technique [1] based on binary output signal allows us to localize only the most sensitive areas. The defect in this type of circuits, which are very sensitive to the laser beam [2], is often characterized by a weaker sensitivity than that of “healthy” regions. Hence, xVM (Variation Mapping) techniques were introduced to map some parameters in an analog way (the different sensitivity levels are visualized). To date, the T-LSIM technique [3], the Delay and the Phase Variation Mapping techniques were published [4, 5]. We have already had some interesting results by using these techniques [6] but not every “soft” defect case study could be resolved in that way. In this paper we propose to look at some different parameters which characterize an analog signal and can be used as an input for laser mapping. By applying a simple setup, without any additional sophisticated tool, we show on a “golden” commercial IC the added value of this analysis. We also deal with amplifying the weak signal variations induced by the laser beam scan which often are hidden by the high signal variations in analog or mixed-mode ICs.
Analysis of a Media Processor Functional Failure
Authors: Putman Alan
Published: December 2020

A system-on-chip processor (90 nm technology node) was experiencing a high basic function failure rate. Using a lab-based production tester, laser assisted device alteration, nanoprobing, and physical inspection; the cause of failure was traced to a single faulty P channel transistor. The transistor had been partially subjected to N doping due to poor photo-resist coverage caused by halation.
A Case Study: Observation of Counter Doping of Gate Poly and Its Validation in High Density 90nm CMOS SRAM Bitcell
Authors: Tsang Yuk , Wang Xiang-Dong , Mendicino Michael , Blankenship Andrew
Published: December 2020

Threshold voltage (Vt) shift was measured, using atomic force probing (AFP) technique, in the pullup PFETs of high density SRAM bitcell arrays in 90nm CMOS bulk technology. This shift caused catastrophic yield loss. The direct measurements of dopant distribution both in plan view and x-section using Scanning Capacitance Microscopy (SCM) technique suggested counter doping of the P-poly had occurred. A single mask modification was shown to validate the observation and eliminated the counter doping resulting in drastic yield enhancement to about 60% from nearly no yield.
Advanced Sample Preparation Method for Lead Free Bump IMC and Solder Grain Image Enhancement
Authors: Sheu Ming-Song , Kuo Yian-Liang , Lee Jeng-Hun , Lin Yu-Ting , Chu Hui-Chen , Tsai Tsung-Fu , Chang Chih-Horng
Published: December 2020

An advanced method for LF (Lead Free) bump sample preparation to improve the surface of sample that can enhance the image of IMC (Inter Metallic Compound), solder grain boundary and micro-crack after TC (thermal cycle) reliability test is proposed. By this advanced method application, LF bump micro-crack location and propagation path can be observed easily for the reliability test fracture failure mechanism study and LF bump crack improvement further.
High Volume and Fast Turnaround Automated Inline TEM Sample Preparation for Manufacturing Process Monitoring
Authors: Kang Hyoung H. , King John F. , Patterson Oliver D. , Herschbein Steven B. , Nadeau James P. , Fuller Scott E.
Published: December 2020

This paper introduces a high volume and fast turnaround TEM sample preparation method and requirements for a 300 mm inline DualBeam (FIB/SEM) system with “hands-off” full automation. It requires a factory automation system, robust automated recipes, and an ex-situ TEM lamella liftout system. It describes the recipe structure and TEM lamella lift out procedures. The focus is on fully automated TEM sample preparation for process monitoring in manufacturing line. Two successful examples are described to demonstrate the benefit of this method. The first one is TEM sample for CA profile at M1 level. The second is TEM sample for poly crystalline (PC) line profile at post-etch.
Backscattered Electron Imaging for Embedded Subtle Defects in 32nm Processes
Authors: Song Z. G. , Song H. S. , Yu J. , Su T.
Published: December 2020

Although the overall spatial resolution of backscattered electron (BSE) imaging suffers in comparison to secondary electron (SE) imaging, its superior sensitivity to atomic number (Z) contrast and ability to image through overlying insulation levels can provide a complementary approach for imaging subtle buried defects. BSE enables the localization and imaging of embedded defects through overlying insulator levels without the risk of compromising them with reactive ion etch (RIE) or plasma etch exposure or by anisotropic wet chemical delayering process steps. Once the embedded defect is localized with BSE in situ, subsequent imaging by cross sectional Transmission Electron Microscopy (XTEM) combined with elemental analysis by energy dispersive X-Ray analysis (EDX) or electron energy loss spectroscopy (EELs) can be performed without the risk of introducing artifacts. In this work, BSE imaging was successfully employed to image embedded subtle defects in 32nm node technologies through overlying insulator films not possible with conventional SE imaging techniques.
Decapsulation of Copper Bonded Plastic Encapsulated Integrated Circuits Utilizing Laser Ablation and Mixed Acid Chemistry
Authors: Klein Jake E. , Copeland Lucas
Published: December 2020

By utilizing a NdYAG lamp pumped marking laser, along with unique mixes of specific acids, reproducible decapsulation of copper bonded devices without damage to the bond wires, packaging material, or to the silicon die circuitry itself can be achieved. With the copper bond wires, die, or substrate exposed, typical failure analysis methodology can then be applied to drive root cause failure analysis or device characterization.