bluuebunny/crossref_metadata_2025 huggingface dataset:
Dynamic Mechanical Properties of Polyoxymethylene I
Authors: Miki Kyosuke , Yokokawa Yukimoto , Hikichi Kunio , Furuichi Jiro
Published: November 2005

Dynamic mechanical properties of melt grown Polyoxymethylene are studied for specimens with different lamella thicknesses and for irradiated specimens over a range of temperature from -30°C to 150°C. The apparent relaxation strength of the mechanical α-dispersion is proportional to the lamella thickness. This result qualitatively satisfies the requirements of Okano's theory of crystalline dispersion. The apparent relaxation strength of the α-dispersion for irradiated specimens increases with increasing irradiation dose. This behavior is not due to the growth of lamella thickness with irradiation, but due to other effects, such as the occurrence of lattice defects in crystallites by irradiation. Thus it is impossible to explain this behavior in terms of Okano's theory. The apparent activation energy of the α-dispersion does not change with γ-irradiation, which indication, which indicates that the irradiation does not essentially influence the molecular mechanism of the dispersion.
Effect of Cu2O on the Polarization of (Zn, Cd)S
Authors: Yamashita Akio , Hagiwara Hiroshi , Yamauchi Ichiro
Published: November 2005

An effect of Cu2O on the persistent internal polarization of (Zn, Cd)S dispersed in the insulator binder was investigated. For an appropriate addition of Cu2O, the polarity of charges of the storage layer was reversed, that is, the charges had the same polarity as the electrode in contact with the storage layer.
The charges are shown as functions of decay time, electric field, length of application of external field, and light irradiation intensity. It was consequently presumed that the trap due to (Zn, Cd)S captures charges of the opposite polarity to the electrode in contact with the storage layer and the trap due to Cu2O captures charges of the same polarity as that electrode. Furthermore it was necessary to consider the interaction between the charges respectively trapped due to (Zn, Cd)S and Cu2O.
Loops and Spirals on Thermally Etched Surfaces of Cleaved NaCl Crystals
Authors: Patel A. R. , Bahl O. P. , Vagh A. S.
Published: November 2005

Freshly cleaved (100) surfaces of laboratory grown single crystals of NaCl were thermally etched by placing them in a muffle furnace on a platinum lid. In addition to the usual square etch pits, various closed loop patterns have been beautifully illustrated. It is conjectured that the circular loop patterns, having a central spiral, might have been formed as explained by Lang (1957), while the pattern similar to that originating at Frank-Read sources and the multiple loop pattern might have been formed at pairs of dislocations of opposite nature.
Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure
Authors: Nakashima Hisao , Sugano Takuo , Yanai Hisayoshi
Published: November 2005

SiC film is epitaxially grown by reacting methane to silicon. The growth rate of the film is measured as a function of the temperature and the partial pressure of methane. The results show that the film thickness is proportional to t
1/2(ln
p+A)1/2×exp
(-4q/2k
T) where t is the reaction time, p is the partial pressure of methane, T is the reaction temperature and A is constant. Because of the parabolic rate law, the high activation energy of 4 eV, and the dependence of partial pressure of methane, the rate determining process will be due to the diffusion of carbon atoms through the SiC film.
By electron diffraction analysis, the crystal structure of the film is studied. The film is composed of two layers, a single crystal layer and a polycrystalline layer. The single crystal layer is at the surface of the film, and the polycrystalline layer is at the interface of SiC and Si. An epitaxy relationship between SiC and Si is observed.
Application of Different Orthonormal Expansion Methods to Neutron Measurements. II. Estimation of Dose Equivalent Rates
Authors: Ryufuku Hiroshi
Published: November 2005

In the present parer, the multi-detector method for obtaining neutron dose equivalent rates is discussed in detail by the use of the theory of orthonormal expansion. An examination of two different procedures in which the real or adjoint flux, respectively, is used shows that the “Adjoint Flux Procedure” is better for neutrons of broad range spectra and also for monoenergetic neutrons.
Construction of Single-Mode D.C. Operated He/Ne Lasers
Authors: Ramsay J. V. , Tanaka K.
Published: November 2005

Methods of construction of d.c. operated He/Ne laser tubes using optical contact bonds are described. Optimum values of various parameters for operation at 632.8 mm have been establised and a robust single-mode laser is described which is very suitable for use as a light source in interferometry. It is relatively easy to construct and can be dismantled for major maintenance such as refilling.
Anodic Oscillations and Noise in Glass Bulb Mercury Arc Rectifiers
Authors: Aikawa Kosaku
Published: November 2005

Voltage oscillations and noise generally appear in glass bulb mercury arc rectifiers. The oscillations have two types, one of which is low frequency pulsatory fluctuation having frequency below 10 kc/s and peak to peak amplitude below several volts, and the other is high frequency quasi-sinusoidal oscillation having frequency about 100 kc/s and the same amplitude as the former. In some rectifiers, low frequency fluctuations are generated, accompanied by a faint glow which surrounds a cylidrical anode. High frequency oscillations appear very stably in other rectifiers, accompanied by a bright glow ball in front of the anode, frequently causing radio interference. The frequency of oscillations is affected by arc current, ambient temperature, residual gas pressure, magnetic field or shunt capacitor. On the hypothesis that these oscillations are periodic repetitions of generation of excess ions and the decay of ion density by ambipolar diffusion, the life time of ions can be calculated. The frequencies calculated on some assumptions apparently agree with experimental results.
Dielectric Properties of Solid-State Gelatin and Collagen
Authors: Saiki Kuniomi , Okamoto Yasushi
Published: November 2005

Dielectric properties of collagen and gelatin are studied in order to get detailed information concerning the properties of the incompletely crystallized part, and as a result to get more complete information about the structure of collagen. Two kinds of dielectric absorption, α- and β-absorption, are observed in the temperature range between -70°C and 200°C and in the frequency range between 30cps and 106cps. The dipoles which contribute to the molecular motions for α- and β-absorption are situated on the polypeptide main chain of the “band part” appearing in the electronmicrograph of collagen fibril. The activation energies of the absorptions are 24∼48 Kcal/mole and 12∼19 Kcal/mole, respectively.
A High Resolution Echelle Monochromator and Its Application to Ion Temperature Measurement of He Plasma
Authors: Miyamoto Kenro , Otsuka Masamoto , Fujita Junji , Kawasaki Sunao , Inoue Nobuyuki , Suzuki Yasuo , Uchida Taijiro , Mori Kazuo , Ando Kozo , Ishimura Tsutomu
Published: November 2005

For the measurement of the profile of a spectral line, a high dispersive monochromator with an Echelle grating and 12 channels of photoelectric devices using thin glass sheets to separate the line profile was constructed. The measured resolving power is about 2×105 and the linear dispersion at the image plane is 1.2 mm/Å at 5000Å. This instrument was used to measure the ion temperature of a BSG device by employing the 4686Å line of He II.
Longitudinal Magneto-Optic Effect in Ferromagnetic Thin Films. I
Authors: Yoshino Toshihiko , Tanaka Shun-ichi
Published: November 2005

Theoretical equations are derived on the longitudinal Faraday and Kerr effects in gyroelectric thin films bounded by a nonmagnetic medium on each side under the first order approximation where a gyoelectric constant Q is much smaller than unity. Multiple inner reflections are considered. Analytical solutions for the coefficients of these effects are also obtained for films satisfying the condition, |(πN
d
Q)/λ0|<1, where N, d are the complex index of refraction and thickness of the film, λ0 the wavelength of light in vacuum. The coefficients consist of two terms, the one stemming from the propagation of wave within the film, and the other, the boundary effect in the film.
Plastic Deformation of Point Contact Germanium Diode
Authors: Matsushima Iwao
Published: November 2005

Dislocation etch pits and other etch patterns due to plastic deformations are observed by the decoration method at electrically formed area on the crystal surface of a point contact germanium diode. The dislocations and other crystal defects are decorated with a lithium impurity. The lithium vapor is diffused into a germanium surface, and crystal defects are delineated by the selective etching of precipitates.
The distributions of dislocation etch pits appear in the area of about 70–100 µ in diameter around a point contact and they show the crystallographic orientation <110> on the (111) surface. The dislocation etch pits and other crystal defects are ascribed to the plastic deformation induced in the contact region by an electrical forming.
It is confirmed by means of the thermo-emf that the type of conductivity of the formed region changes from an n-type to a p-type. This suggests that dislocations play an important role in the conductivity conversion.
Moving Striations and Helical Oscillation in a Longitudinally Magnetized Positive Column
Authors: Yatsui Kiyoshi , Ohji Takayoshi , Inuishi Yoshio
Published: November 2005

The effect of longitudinal magnetic field on the characteristics of moving striations appeared in low pressure gaseous plasma, and the relation between these striations and helical oscillation are experimentally investigated in connection with anomalous diffusion. Although the frequency of striations decreases monotonically with increasing magnetic field, wavelength shows complex changes. It is found that strong interaction exists between these striations and helical oscillation in the region of anomalous diffusion. Moving striations begin to be strongly damped with distortion of wave-forms in the presence of helical oscillation.
The Influence of Dissolved Oxygen in SiO2 on C-V Characteristics
Authors: Kubo Shuji , Ichinohe Eisuke
Published: November 2005

Characteristic of Si–SiO2 interface which is obtained by dry O2 oxidation under various conditions and by annealing in nitrogen atmosphere, are investigated by the capacitance-voltage measurement. It is shown that concentration of dissolved oxygen in SiO2 is in linear proportion to flat band voltage in C–V curve, and is closely related to “shoulder surface stage”. The experimental results suggest that aluminum metal on SiO2 have gettering action for dissolved oxygen in heat treatment of Si–SiO2–Al system at 300–500°C.
Electrostriction in Perovskite-Type Ferroelectric Ceramics
Authors: Uchida Naoya , Ikeda Takuro
Published: November 2005

The electrostriction and polarization in the perovskite-type ferroelectric ceramics have been calculated in the state under the arbitrary biasing field. Domain configurations produced by 180°-reversal or 90°-rotation have been represented here by the threshold angle θ180 or θ90; that is, domains, making smaller angles than θ180 or θ90 after the switching once occurs, are completely reoriented under the given bias. The electrostriction and polarization can be calculated as functions of θ90 and θ180, from the spontaneous strain and polarization of the crystal. The spontaneous strain in the rhombohedral crystal has been found as (3/2)[(π/2)-α] for the first time. Bias dependence of θ90 and θ180 have been obtained from the experimental results on the basis of the present calculations. Some discrepancies between the results and the expectation based on the activation field considerations are presumably due to the mechanical stress accompanied with 90°-rotations, and to the interaction of 180°-reversals and 90°-rotations.
Magnetic Properties of Fe-Co Alloy Fine Particles
Authors: Tanaka Toshikazu , Tamagawa Nobuaki
Published: November 2005

Fine particles of Fe-Co alloys, whose radii ranged about from 50 Å to 350 Å, were prepared by evaporation in the atmosphere of argon gas at low pressure. They arranged like a necklace. An assembly of these particles, whose average radius was 350 Å, has a uniaxial magnetic anisotropy of 3∼4×106 ergs/cm3, which is mainly due to the shape anisotropy of the assembly. Relative change of magnetization of these particles against the alloy composition was almost the same with the Slater-Pauling curve, but values of magnetization were fairly less than those of bulk specimens. Superparamagnetic behavior was not observed for the assembly of the smallest particles.
Three-Wave Optical-Mixing Effects in Wedge-Shaped Cells
Authors: Nabara Akira , Kubota Kanji
Published: November 2005

The optical-mixing process in which the light at the frequency of 2ω1–ω2 is generated from two incident beams at ω1 and ω2 through the polarization of the third order in the electric field, is studied in several kinds of liquid using a sample cell with nonparallel windows. The dependence of the output light intensity at 2ω1–ω2 on the optical thickness z and the angle α of parallelism of the cell is obtained. For small α, the output intensity oscillates as z is changed except C6H6, in which a different behavior is observed under the same condition. For large α, this oscillatory behavior is observed fairly small. In these experiments, the optical path length z is 10∼15 times as long as the coherence length. The third-order nonlinear susceptibilities have been estimated to be of the order of 10-12∼10-14 cm3 erg-1.
Influence of Giant Pulse Irradiation on a Ruby Laser
Authors: Nakaya Toshizo , Okabe Hirobumi
Published: November 2005

In an optical system, consisting of two ruby lasers (one is Q-switching operation, the other normal operation), the following phenomena have been studied on the basis of the experimental results obtained on the fractional metastable state population; 1) quenching of normal laser oscillation, 2) amplification of incident giant pulse by maser mechanism, and 3) changes in giant pulse characteristics by giant pulse irradiation in a Q-switching laser with saturable absorber.
Pressure Dependent Characteristics of an Oak Ridge Type Duoplasmatron Ion Source II. Composition of Hydrogen Ions.
Authors: Watanabe Masanori
Published: November 2005

A measurement of the abundance ratio of mass species of hydrogen ion beam extracted from an Oak Ridge type duoplasmatron ion source was made with a mass-spectrometer and processes leading to the formation of each ion were discussed. Each ion current of H1+, H2+, and H3+can reach a value of 70% or more of extracted beam current depending on the operation conditions. The atomic ion current increases as the arc current increases and it becomes dominant when the spacing between intermediate electrode and anode is small. While, the triatomic ion current is dominant at small arc currents and small magnetic field strengths particularly when the gas pressure is high and the spacing between the intermediate electrode and anode is large. The molecular ion current is dominant only at low gas pressures. In contrast with the case of RF ion source the atomic ions are formed by two-stage processes, namely the reactions, H2+e→ H2++2e and subsequent H2++e → H1++H1+e, have an important role. While, the triatomic ions are produced through the ion-molecule reaction, H2++H2→ H3++H1.
Effect of the Internal Short-Circuiting on Electrical Characteristics of MHD Power Generators with Peg Walls
Authors: Sasaki Yutaro
Published: November 2005

The effect of the internal short-circuiting, which is caused by metal pegs embedded in insulating walls for an MHD power generator results in the reduction in open-circuit voltage, whereas it does not make any change in short-circuited current in the absence of the Hall effect. Electrical characteristics of generators with peg walls are expressed in terms of a correction factor which represents a rate of the reduction in open-circuit voltage. It is shown that this factor can be determined theoretically by the use of a conformal mapping technique or experimentally by means of an electrolytic bath. Experimental results obtained with a combustion-driven MHD power generator reveal that this effect is not minor even in the presence of thermal boundary layers near peg walls and that it can be minimized by coating alumina on the surface of metal pegs.
Growth of Crystalline Silicon Films on Polycrystalline Substrate
Authors: Ishiwatari Keizo , Oka Toshio , Akiyama Kenji
Published: November 2005

Crystalline films of silicon were prepared on a tungsten substrate by vacuum evaporation. The method used here was evaporation of silicon on a tungsten substrate, on which thin gold film was predeposited, keeping the substrate at 600–800°C. Growth of plane crystals or whisker crystals was observed depending on growth conditions such as substrate temperature, thickness of gold film and evaporation rate. The sizes of grown plane crystals were as large as several hundreds microns. Their orientation is (111) plane parallel to the substrate and their conductivity is n-type. The details of the growing technique and the examination of grown films will be explained and growth mechanism will be discussed.
Some Properties of SiO2 Films Deposited by the Reaction of SiH4 with Water Vapor
Authors: Haneta Yuichi , Nakanuma Sho
Published: November 2005

SiO2 films were deposited on the n-type Si substrates by the reaction of SiH4 with water vapor in the temperature range 900°∼1200°C. The refractive index and etching rate with HF solution of SiO2 films prepared at 900°C were strongly dependent on the molar ratio of water vapor to SiH4, but no shifts of the 9 micron absorption peaks by the stretching vibration of Si-O-Si bonds were observed among the films prepared at different molar ratios and at 900°C. These results indicate that Si atoms are included in these SiO4 films. A capacitance-voltage hysteresis of the metal-oxide-silicon structure was observed and attributed to a phenomenon caused by the ionization of Si atoms in the SiO4 films.
Magnetic Thin Films Deposited upon a Liquid-Like Surface
Authors: Yamanaka Mikio , Ueda Ryuzo
Published: November 2005

Some metal films, mainly of Permalloy and Ni, were deposited on the surface of silicon grease plastered over glass substrates and their magnetic properties were compared with those evaporated directly on glass surface in order to know the substrate effects on the properties of evaporated thin films, The nature of these films is closely related to their preparation conditions. Au, Ag, Al, Ni and Permalloy films on grease exhibit a contraction in several per cent on account of their wrinkles. Fe vapour is, however, reflected back on the grease surface. Permalloy films on grease show only a small variety in B-H hysteresis loops and their coercive forces are nearly constant in a relatively small value for the thickness variation. Ni films on grease are by far easily magnetized compared with those on glass because the relaxation of internal stresses reduces their perpendicular anisotropy.
Specular Reflectance Curves of Wax-Polished Painted Surface: Determination of Wax-Film Thickness and rms Roughness
Authors: Nagata Ken-ichi
Published: November 2005

The reflectance curves of wax-polished painted surface, for p-polarized light of three wavelengths (641, 548 and 435 mµ), near the Brewster angle are classified into three groups. They are analyzed in connection with varied states of wax spread on the painted surface. The analysis is based on an expression introduced in the preceding paper for the specular reflectance of a uniformly filmed rough plane surface. The following results are given: When the wax-film is uniform in thickness its thickness lies between 750 and 400 Å, and the surface becomes partially filmed when the thickness is below 400 Å. The rms roughness of the painted surface is 400∼500 Å.
222 Electron Reflection from Aluminium and Systematic Interaction
Authors: Nagata Fumio , Fukuhara Akira
Published: November 2005

Energy dependence of electron diffraction from a bent wedge crystal of Al was investigated experimentally at energies from 100 KeV to 1 MeV as well as theoretically with particular interest in the systematic interaction. The (222) intensity at the crystal orientation for this reflection is remarkably reduced under observation at some 600 KeV where two dispersion sheets cross each other; furthermore the measured energy-dependence of a fine fringe appearing in the extinction contours agrees fairly well with our theoretical prediction. Around the orientation for (111) reflection the observed profile of (222) image-intensity includes a fringe synchronous to that in the (111) intensity, correspondingly to Vingsbo's observation for an MgO crystal (Proc. 6th International Congress for Electron Microscopy, Kyoto (1966), Vol. I 109.). As for (111) extinction distance, the present theoretical estimation gives a fringe-period shorter by 9% and 16% at 100 KeV and 1 MeV respectively than the simple two-ray approximation does.
Apparent Negative Thermal Conductivity in the Flux Flow State of Type II Superconductors
Authors: Ohta Tokio
Published: November 2005

A theory of thermal conductivity in the flux flow state of type II superconductors where an electric current and a thermal gradient coexist is developed and the conditions of the sign reversal of the net thermal conductivity are sought out in detail. The condition for negative sign in a typical case is E>5.2×10-9
H
2/3, where E, the electric field across the sample and H, the applied magnetic field, are measured in V/cm and Oe, respectively. The “Umkehreffekt” in the thermal conductivity and the negative figure of merit are discussed regarding the effective thermoelectric effects.
Theory of a Double Cone Viscometer for Non-Newtonian Liquids
Authors: Oka Syoten , Takami Akira
Published: November 2005

A general relationship between the torque M and the angular velocity Ω is derived theoretically for a time-independent non-Newtonian liquid specified by an arbitrary flow curve. It is assumed that the motion of the liquid is laminar and steady and that each liquid particle moves with a constant angular velocity on a circle on a horizontal plane perpendicular to the axis of rotation. The edge-effect is neglected. It is shown how to determine the flow curve from the experimental relationship between M and Ω for some special cases: i) non-Newtonian liquid obeying power law flow curve, ii) non-Newtonian liquid whose flow curve is expanded into a power series, iii) Bingham body, and iv) non-Newtonian liquid obeying Casson's equation.
Identification of Apparent Mass 80 Peak of Argon in Mass Spectrum Obtained with Static Operation
Authors: Tsuyama Hitoshi , Doi Hiroshi
Published: November 2005

In the mass spectrum of argon obtained by a static operation, an abnormal peak appeared at the position corresponding to M/e=80. In order to identify whether this peak can be defined as diatomic ions Ar2
+ or atomic ions Ar+2-1 produced by charge transfer, the yield curves were made as functions of the gas pressure, the ion energy and the electron energy.
It was concluded from the curve obtained against electron energy that the ions are Ar2
+ for electron energy below the appearance potential of Ar++ while above that energy, most of the ions are Ar+2-1 formed by the charge transfer process A+++Ar→Ar++Ar+ which occurred in the space between the ion source and the magnetic analyzer.
This interpretation is in agreement with the observed shape of the peak at M/e=80.
Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier Diode
Authors: Furukawa Yoshitaka , Ishibashi Yoshio
Published: November 2005

A GaAs Schottky barrier diode was prepared by evaporating Au onto the (1̄1̄1̄) surface of a n-type GaAs crystal whose carrier concentration was 2×1016 cm-3. When a reverse voltage was applied to this diode, to this diode, transient phenomena were observed in the capacitance as well as in the reverse current. The time constants associated with the transient phenomena were reduced appreciably by exposing the diode to monochromatic lights with photon energies lower than the band gap of GaAs. The capacitance C

s
and the reverse current I

s
observed in a dark steady state condition changed by an amount of (Δ
C

s
)
s
and (Δ
I

s
)
s
respectively when the diode was exposed to the monochromatic lights. Sign of (Δ
C

s
)
s
is the same as that of (Δ
I

s
)
s
, and sign reversal occurs at photon energy of about 1.1 eV. A tentative explanation is given for the sign reversal and the common sign of (Δ
C

s
)
s
and (Δ
I

s
)
s
.
Carrier Lifetime Determination through Stress-Associated Cyclotron Resonance
Authors: Otsuka Eizo , Shimura Mikihiko , Ishida Shuichi
Published: November 2005

A new method of measuring carrier lifetime in silicon and germanium at liquid helium temperatures is introduced. It makes use of cyclotron resonance combined with application of uniaxial stress, and is intended to supplement another cyclotron resonance technique reported earlier, which measures lifetime broadening of a resonance signal. Though the knowledge of intervalley scattering rate is required, the present method has the merit of being free from the electrode-contact problem and is particularly useful for determining the lifetime of 10-8–10-9 sec, which is too short for a direct photodecay measurement and yet too long for the other cyclotron resonance method. An appropriate example of date is given for a doubly doped p-type germanium.
Secondary Electron Emission from Diffusion Pump Oils. I
Authors: Ishikawa Kazuo , Goto Keisuke
Published: November 2005

Secondary electron emission (SEE) properties of Octoil-S, DC-704, and DC-705 have been studied by a pulsed-beam method in the primary range 50–2000 eV. For these three specimens, the maximum values of SEE coefficient σ are 2.8, 2.0, and 2.0, respectively, and the primary electron energies which give the maximum σ are equally 200 eV. The maximum values of inelastic reflection coefficient η are 0.14, 0.17, and 0.17, respectively. The results are compared with those for other molecular substances. SEE from tungsten covered with an evaporated film of Octoil-S, DC-704, and a vacuum grease has also been studied. σ varies markedly for every specimens with increasing thickness of the film. This method can be used for quantitative detection of organic contamination in vacuum systems down to average thickness of several angstroms.
Dielectric Properties of Low Molecular Weight Polychlorotrifluoroethylene
Authors: Hara Tohru
Published: November 2005

Measurements of dielectric properties of six polychlorotrifluoroethylene samples with different molecular weights, between 500 and 1300, were made in the temperature range between -70° and +200°C as a function of frequency (30 Hz–3 MHz). The temperature dependence of NMR line width was measured in the temperature range between -150° and +80°C. A dielectric absorption due to the dipole orientation in crystalline phase is observed in low molecular weight samples. The activation energy of the dielectric process is 35 Kcal/mole for sample # 2 (M̄:600) but diminishes to 17 Kcal/mole for # 7 (M̄:110,000). The magnitude of the absorption increases with increasing molecular weight. Loci of ε'' vs ε' in these low molecular weight samples are fitted by the Davidson-Cole plot, but they approach the Cole-Cole plot with increasing molecular weight. The dielectric process is explained in terms of the dipole orientation of two modes: main chain dipole and end-group dipole. The effective dipole moment of a polar group unit in the chain, measured for a dilute solution, increases with increasing molecular weight.
Fluid Layer Heated from Below
Authors: Banerjee Mihir B.
Published: November 2005

The present paper investigates the stability of an inviscid layer of homogeneous fluid between parallel plates under the action of a uniform adverse temperature gradient while the fluid is having a general streaming which depends only on the coordinate transverse to this streaming direction. A sufficient condition of stability is obtained for the above system and further it has been shown that this model is an unstable one howsoever small the applied adverse temperature gradient may be.
A Selective Oscillation of P and R Branches in CO2 Laser
Authors: Kambara Hideki , Suzuki Shigeko , Iwano Masao , Katayama Mikio
Published: November 2005

A stable laser action in P and/or R branch in the 00°1–10°0 vibrational transition of CO2 was obtained by a fine adjustment of an output mirror. The change in spectra with time was also examined.
Photoconduction of High-Density Polyethylene
Authors: Tanaka Toshikatsu , Inuishi Yoshio
Published: November 2005

A photo-current was observed in high-density polyethylene when a 40 micron-thick sample was exposed to low-intensity white light from a tungsten lamp. A large photo-current was found when a sample had been pre-irradiated with high-energy electrons. Notable results are as follows; it is fairly sensitive to photons with a certain range of energy (about 1.2 eV), which might support that charge carriers are optically released from trap centers; it has approximately the same activation energy as the dark current; it might be related to space charge formation; and photo-current/light-intensity characteristics are divided into three regions of intensity. Tentative energy diagram is proposed for irradiated polyethylene on the assumption of band model. Apparent correlation is possible between double bonds and conductivity, which might be a key to investigate the electrical properties of polymers.
X-Ray Studies on the Sub-Grain Boundaries of LiF Single Crystals by the Limited Projection Topography
Authors: Futagami Kōji
Published: November 2005

Limited projection topography is applied to three-dimensional observations of the sub-grain boundaries in LiF single crystals. (1) When the density ρ of dislocation constituting a sub-grain boundary is low or tilt-angle θ is small (ρ<5×105/cm2, θ<4''), individual dislocations forming an array in sub-grain boundary can be observed. (2) When ρ is comparatively high (ρ>2×106/cm2, θ>9''), only interference fringes are observed, which are confirmed to be Pendellösung ones associated with the wedge formed by sub-grain boundary and the surface of specimen. (3) When ρ is in the intermediate range (∼1×106/cm2, θ∼6''), both the dislocation arrays and interference fringes are observed overlapping each other. The conditions for appearance of the dislocation images and the interference fringes are explained by taking into account the elastic distortion around the dislocations.
Reduction of CrO3 into CrO2 and Cr2O3 under Very High Pressure and High Temperature
Authors: Kawai Naoto , Sawaoka Akira , Kikuchi Saburo , Tamagawa Nobuaki
Published: November 2005

High pressure and high temperature region under which chromium dioxide CrO2 can be synthesized was examined by using split sphere type of high pressure equipment. The experiments were performed under pressures up to 85 Kb and at temperature up to 1600°C
Electrical Properties of Gallium Phosphide
Authors: Miyauchi Takeshi , Sonomura Hajimu , Yamamoto Nobuyuki
Published: November 2005

Hall coefficient and conductivity of GaP crystals produced by the solution-growth method were measured at temperatures between 4.2°K and 300°K. Activation energies of donors in undoped, Si-doped and S-doped samples are almost the same indicating about 0.10 eV. In Zn-doped Gap, the level of Zn lies 0.031 eV above the valence band. Electron mobility in undoped samples and hole mobility in Zn-doped samples are 140–180 cm2/volt·sec and about 50 cm2/volt·sec respectively at room temperature.
These samples exhibited impurity conduction at considerably high temperature, for example, at 50°K for undoped samples, and its characteristics are similar to those of germanium in the metallic and the transition region.
Vapor Transport Thermodynamics of GaP-Cl2-H2 System in an Open Tube
Authors: Seki Hisashi , Araki Hidemaro
Published: November 2005

In order to define the most suitable conditions for the transport of gallium-phosphide the composition of the gas phase is calculated for various temperatures and chlorine-to-hydrogen mole ratios in an open tube process. A transport rate equation base on thermodynamic considerations has been developed. It is shown that the principal components are HCl, GaCl3, GaCl, and P4 at low temperature, and HCl, GaCl, and P2 at high temperature, in addition to H2 for a Cl2/H2 mole ratio of 1×10-2. The hypothetical partial pressure of gallium-phosphide, from which the deposition rate of GaP may be conveniently estimated, is calculated.
Intensity Measurements in Vacuum Ultraviolet Region by Aromatic Phosphors
Authors: Masuda Fumio , Kochi Masakatsu , Iwashima Satoshi , Inokuchi Hiroo
Published: November 2005

Intensities of radiation in the region 900–1700 A were measured with aromatic phosphors, 1,12-benzperylene (I), dihydrotetracene (II), perylene (III), tetrabenzperylene (IV) and tetrachlorpyrene (V), combined with 7696-type photomultiplier mounted at the exit slit of a Seya-type 0.5 metre vacuum monochromator. The (I)-film against irradiation was more stable than that of sodium salicylate (VI), even below 1300 A. The quantum yield of (I)-film was two times higher than that of (VI). The (II)-film was sensitive like to (VI), but was decomposed gradually under irradiation. Other three, III, IV, V, were inferior to sodium salicylate as photon detector.
The Modes of the Screw Instability in a Positive Column for Several Gases
Authors: Kawaguchi Motoichi , Itoh Satoshi , Yamamoto Kenzo
Published: November 2005

The mode, frequency and wavelength of screw instability are experimentally observed for several gases. These experimental results are compared with the theory modified from that of Kadomtsev and Nedospasov. The modified theory shows good agreement with the experiment. The experimental results are divided into two cases: one is obtained in rare gas and the other is in diatomic gas discharge. For rare gas discharges the mode coincides with the Kadomtsev-Nedospasov's theory, while for diatomic gas discharges the column shows a peculiar mode transformation with increase of longitudinal magnetic field. These experimental results are explained by the modified theory.
A New Method for Thermal Conductivity Measurement
Authors: Ozawa Takeo
Published: November 2005

A new method for thermal conductivity measurement described is based on an analysis of transient change of the temperature gradient in specimens caused by intermittent heat input. The thermal conductivity is obtained by integration of the change of the temperature gradient. The method is suitable for measurement of the temperature dependence of the thermal conductivity especially over the temperature rang were the thermal properties of the specimen change sharply. The method is verified by an analysis of variances, using silica glass as the specimen, and the thermal conductivity of the silica glass observed is compared with the reported ones. Satisfactory agreement among them is observed. The method is also applicable to the measurement of thermal diffusivity.
Piezoelectric and Elastic Properties of Lithium Niobate Single Crystals
Authors: Yamada Tomoaki , Niizeki Nobukazu , Toyoda Hiroo
Published: November 2005

Piezoelectric and elastic constants of lithium niobate single crystal were measured in the temperature range between 20°C and 200°C. These constants were obtained by measuring the resonant and antiresonant frequencies of the length-extensional mode of bars with various orientations. The measured constants are all of the piezoelectric strain constants and the dielectric constants and a part of the elastic compliances, namely, s

E

11, 2s

E

13+s

E

44, s

E

14 and s

E

33. Values at 20°C and their temperature dependence are as follows. The constants d and s are expressed in units of 10-8 statcoulomb/dyn and 10-12 cm2/dyn, respectively: d
15=222[1+(T(^°C)-20)2.8×10-4]; d
22=62.3[1+(T-20)×2.4×10-4]; d
31=-2.59[1+(T-20)11×10-4]; d
33=48.7[1+(T-20)2.9×10-4]; s
11

E
=0.564×[1+(T-20)1.5×10-4]; 2s
13

E
+s
44

E
=1.39[1+(T-20)2.0×10-4]; s
14

E
=
-0.084; s
33

E
=0.494[1+(T-20)1.5×10-4]; ε
11

T
=84.6; ε
33

T
=28.6; k
31=0.02; k
22=0.32; k
33=0.47. The electromechanical coupling factor k'31 of z
y
w-45°-cut bar amounts to 0.50.
The Condition for the Appearance of Necking under Tensile Tests
Authors: Takeuchi Tomoyuki
Published: November 2005

When a necking appears in a specimen under a tensile test, the strain rate at the necking region must become larger than the other region of the specimen. Generally, the flow stress of the material increases with strain rate. Taking these factors into account, the condition for the appearance of a nicking in a specimen was calculated. It was shown that a necking can not appear in a specimen if the size and the local work-hardening rate are ideally uniform in the specimen. The cause for the appearance of a necking in a real specimen is the inhomogeneities of the cross-sectional area or the local work-hardening rate in the specimen. Comparisons of the calculated results with experiments are described.
Electron Microscopic Observation of Oxides Formed on Thin Film of Copper at Elevated Temperature
Authors: Ishii Makoto , Hashimoto Hatsujiro
Published: November 2005

Electrolytically-thinned copper foils containing dislocations, grain boundaries and twin structures are heated at temperatures between 200°C and 600°C and in air-pressures between 5×10-3 mmHg and 760 mmHg in order to investigate the relation between the crystal lattice imperfections in the copper substrate and the oxide crystals formed on the surface. It is observed in the electron microscopic images that cuprous oxide particles are epitaxially formed at the temperature below 400°C on the copper surface. The oxide particles with diameters less than 1000 Å have a ball shape and some parts project from the copper substrate. Some strain field between ball-like oxides and copper substrate is observed as a contrast anomaly in the electron micrograph. The nucleations of the cuprous oxide crystals are independent of the imperfections in the copper substrate. Some intermediate states of copper oxides which are probably superstructures of paramelaconite and a superstructure of cupric oxide are observed during the oxidation procedure.
Transient Phenomena in DC Electroluminescence in Thin Films of Zinc Sulfide
Authors: Soeya Teruko
Published: November 2005

Making use of the cells with Al or Au-counter electrode, transient phenomena in brightness of electroluminescent emission and in over-all current which is flowing through the cell are investigated under various conditions. Thin films used are of composition ZnS : Cu : Mn : Cl. From the observed facts it is confirmed that there exist two cases classified by the presence of so-called “forming” phenomena. It is also found out that these two cases are different from each other in the following points; i.e., the threshold voltage for the electroluminescent emission, the location of emitting spots, the voltage-current characteristic of the cell, and the transient response for the polarity reversal of the excitation voltage. Lastly, regarding the transient response for the polarity reversal of excitation voltage, a comparison between Thornton's and our results is described.
Metallurgical Investigations with a 500 kV Electron Microscope
Authors: Fujita Hiroshi , Kawasaki Yōzō , Furubayashi Ei-ichi , Kajiwara Setuo , Taoka Tadami
Published: November 2005

Metallurgical investigations such as recrystallization, martensitic transformation and dynamic behaviors of dislocations have been carried out with a 500 kV electron microscope. The critical foil thickness sufficient to observe the same dynamic behaviors of these phenomena as occurred in bulk specimens is about 1 µ for recrystallization in aluminum and iron alloys, and 3 µ for cell formation in aluminum. On the other hand, foil thickness which allows observation with the 500 kV electron microscope is practically above 8 µ for annealed aluminum and above 2 µ for annealed iron and copper, and it is about one half in order to allow continuous observation of the dynamic behaviors of phenomena.
It is concluded that the 500 kV electron microscope has great advantages for the dynamic investigations of metals, especially of materials with the atomic number smaller than 15 such as aluminum and many of ionic crystals.
Electron Beam Extraction from INS AG Synchrotron. Part I. Theory
Authors: Kawasaki Sunao , Huke Kazuo
Published: November 2005

The theoretical basis for the electron beam extraction from the INS 0.75 GeV AG synchrotron is given. The method is essentially a Piccioni scheme in which the beryllium absorber target and two cascade kicker magnets are used. The extraction efficiency is calculated from the properties of the accelerated beam of the accelerator, the energy and angular distribution of the particles after passing through the absorber and the characteristics of betatron oscillations of the electrons in the guide field containing two pulse magnetic fields and the fringing field of the synchrotron magnet. The efficiency is found to be about 40% at most.
Reflection of Light from Filmed Rough Surface: Determination of Film Thickness and rms Roughness
Authors: Nagata Ken-ichi , Nishiwaki Jien
Published: November 2005

The specular reflection of light from non-conducting slightly random surfaces which are uniformly or partially filmed, is investigated in a statistical manner. The film is assumed to be thin, transparent and uniform in thickness. Two possible methods for determining its thickness d, rms roughness σ and, if necessary, refractive index are introduced. One method uses the minima of specular reflectance curves near the Brewster angle and the other uses the reflectance values directly. The latter can apply only up to σ/λ=0.025, where λ is wavelength, owing to the effect of diffuse reflection. The former is almost free from this effect, does not require the absolute value of reflectance and enables one to discriminate whether the surface is filmed uniformly or partially.
Growth Ridges, Etched Hillocks, and Crystal Structure of Lithium Niobate
Authors: Niizeki Nobukazu , Yamada Tomoaki , Toyoda Hiroo
Published: November 2005

Growth feature of a LiNbO3 crystal obtained by the pulling method has been studied. The formation of growth ridges was interpreted as the intermittent growth of the form {102̄}, which was the most readily grown form from the melt. The point group of the high temperature, paraelectric phase was uniquely determined as 3̄2/m from the symmetry elements of the configuration of ridges.
On (001̄) planes, the triangular etched hillocks were observed. Orientations of the hillocks on the antiparallel domains were related by 2-fold rotation axis parallel to [100] consistent with the phase transition of the type 3̄2/m→3m.
The atomic arrangement in the form {102̄} was examined, and a three-dimensional framework of the corner-shared Nb-O octahedra, similar to the one in perovskite, was found.
Alignment Characteristics of an Optical Maser with a Corner Prism
Authors: Karube Norio , Yamaka Eiso
Published: November 2005

Gaseous laser oscillation has been obtained in a modified Fabry-Perot resonator in which one of the plane mirrors is replaced by a corner-cube prism. The alignment characteristics of such an optical cavity were measured experimentally. Though the alignment tolerance of the plane mirror remained to be a few minutes, the tolerance of the prism alignment exceeded a few degrees. This means an improvement over that of a conventional Fabry-Perot resonator by three orders of magnitude. Some of the basic properties of a corner-cube prism as well as this type of resonator are also described.
Stress in Vacuum Deposited Films of Silver
Authors: Kinosita Koreo , Maki Kunisuke , Nakamizo Kozo , Takeuchi Kyoko
Published: November 2005

Measurements have been made of the tensile stress in silver films evaporated in a vacuum of 1–2×10-5 torr on to mica strips, electron microscopic observations of the film structure being carried out on the other hand. Films having various thicknesses ranging from about 30 Å to 1000 Å were under investigation. The tension per unit width of the film, S, increases sigmoidally with the film thickness d: In the initial stages of film growth in which the film is composed of isolated islands, S is very small; S increases rapidly during the late coalescence stage and the channel stage; after the completion of a continuous, hole-free film, S does increase with d, but at a much slower rate. The mean stress per unit cross section of the film, σ (=S/d), increases sharply with d to assume a maximum at a thickness around 200 Å where the “shoulder of the S-d curve is located, and decreases gradually as d increases further.
Tensile Deformation in Iron Single Crystal Plates Observed by the Divergent X-Ray Method
Authors: Dohi Shoso
Published: November 2005

Tensile deformation which appeared on the X-ray radiographs taken with the iron single crystal plates by the divergent X-ray method was investigated. In the broad Laue-spots on the X-ray radiographs, some kinds of striped patterns appeared in connection with the slips. When the deformation was caused by a single slip, one kind of straight pattern was detected uniformly. When is was caused by a single slip, one kind of straight pattern was detected uniformly. When it was caused by the double slip, two kinds of patterns or the complicated one was seen partly. From these striped patterns it was reaffirmed that the tensile deformation in iron single crystal plates was caused by the single slip or by the double slip of the {110}–<111> slip system. Broad Laue-spots and the white lines in the pseudo-Kossel pattern suggested that the slip deformation in iron single crystal plates was influenced by the sub-grain boundaries.
Effect of Stress on Germanium and Silicon p-n Junctions
Authors: Kanda Yozo
Published: November 2005

The current change induced by uniaxial compression is calculated for the <100>, <111>, <110> and <211> orientations. The change in minority carrier mobility is considered to higher order for stress in addition to the change in minority carrier concentration. The differences of heavy hole mass and light hole mass and their stress dependence are taken. Experimentally obtained deformation potential constants are used.
The minority carrier concentration decreases at low stress level and then increases rapidly with increasing stress. The orientation which shows the maximum current change corresponds to the direction of the rotating axis of conduction valley. The orientation dependence of the current change is in good agreement with that obtained experimentally for the uniaxial and anisotropic stress effects.
In Ge, the apparent stress coefficient of band gap is obtained as -10.5×10-12 eV cm2/dyn for the <111> orientation.
Extraction of a Property of Visual Patterns by Fraunhofer Diffraction
Authors: Fujimura Sadao , Isobe Takashi
Published: November 2005

A simple method is proposed to extract an information concerning relative orientation of straight lines which are contained in a visual pattern such as a character or a numeral by making use of Fraunhofer diffraction produced by a laser beam. When a pattern has straight lines, the diffraction pattern also has straight lines, all of which pass through a point (zero-order point) in the diffraction plane and each of which is perpendicular to the corresponding original one. The use of a rotating straight slit in the diffraction plane and a photomultiplier unit behind it enables us to obtain an electric time-signal which shows maxima corresponding to straight lines in the original pattern. The mutual separation of the maxima informs us of their relative orientation. The extraction of information is carried out quite independently of the position and the orientation of the original pattern.