bluuebunny/crossref_metadata_2025 huggingface dataset:
Allogén vérképzőőssejt-átültetés Magyarországon
Authors: Bátai Árpád , Reményi Péter , Réti Marienn , Barta Anikó , Gopcsa László , Lengyel Lilla , Torbágyi Éva , Csukly Zoltán , Karászi Éva , Tordai Attila , Andrikovics Hajnalka , Balassa Katalin , Tasnády Szabolcs , Masszi Tamás
Published: February 2017

Abstract:

Introduction and aim: The publication summarizes the 2548 stem cell transplantations performed in the period of 1993-2015 in Szent Laszló Hospital, Budapest and provides a detailed discussion of the 425 allogeneic transplantations during 2007–2013. Method: The analysis explains the major steps of the evolution of allogeneic stem cell transplantation and compares the results of the unique Hungarian allogeneic center. Results: The significant shift in the transplantation indications from chronic myeloid leukemia to myelodysplastic syndromes and the rising age of the recipients are in line with world wide tendencies. The latter one is the consequence of the introduction and improvement of the concept of reduced intensity conditioning regimens, originally arising from the idea of Endre Kelemen. The most limiting factor, the donor availability seems to be resolved with the use of a new immunomodulating regimen, the application of posttransplantation cyclophosphamide, which allows the transplantation through HLA barriers with haploidentical family donors with comparable results to the HLA matched volunteer unrelated donors. The above mentioned tendencies result the wider use of allogeneic stem cell transplantation less dependent from recipient age, comorbidities and even donor availability. Conclusions: The publication highlights the need of expanding the stem cell transplantation budget and the involvement of new centers in Hungary in allogeneic of stem cell transplantation. Orv. Hetil., 2017, 158(8), 291–297.
Analysis of Silicide / Diffusion Contact Resistance Making Use of Transmission Line Stuctures
Authors: Akheyar Amal , Lauwers Anne , Lindsay Richard , Potter Muriel de , Tempel Georg , Maex Karen
Published: February 2017

This work deals with the analysis of the resistances of Co-silicided As and B junctions. The influence of junction formation and salicide process on contact resistance was investigated. The contact resistance between the silicide and source/drain region was studied by making use of dedicated transmission line structures. The transmission line structures (TLM) consist of alternating silicided and unsilicided diffusion segments, obtained by making use of a salicide blocking mask. Our TLM results show that the contact resistance has a strong dependence on the doping profile of the diffused region and increases with decreasing surface doping, with increasing Co-silicide thickness, annealing temperatures and time of silicidation.
Periodic Heating in SLSI
Authors: Sharma Ph D PE Kal. Renganathan
Published: February 2017

The periodic heating is studied using hyperbolic heat wave propagative equation complex variables. The flux reversal is observed. Fin assemblies may reduce the heat accumulated.
Solution-Based Precursor Delivery for Copper CVD
Authors: Wang Lidong , Griffin Gregory L.
Published: February 2017

We have measured growth rates and film properties for copper CVD using Cu(hfac)2 dissolved in isopropanol as the precursor delivery method. This approach offers the convenience and control associated with liquid precursor delivery, while avoiding the need to handle the precursor at its high melting point. The method provides similar growth rates to those observed using conventional delivery by solid sublimation, with the additional benefit that these growth rates are achieved using a much lower partial pressure of precursor in the reactor. The growth rate is nearly independent of the partial pressure of Cu(hfac)2, isopropanol, and H2 over the range of operating conditions examined. The film morphology and resistivity are also largely unaffected by the deposition conditions. These results strongly suggest that the mechanism proceeds via an adsorbed intermediate formed by the reaction of Cu(hfac)2 and isopropanol, and that the surface is nearly fully saturated by this intermediate.
The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition
Authors: Hong Seok Woo , Lee Yong Sun , Park Ki-Chul , Park Jong-Wan
Published: February 2017

The effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.
The Use of C-V Techniques To Investigate Instability Mechanisms in M-I-S Structures
Authors: Paul S. , Milne W.I , Robertson J.
Published: February 2017

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radiofrequency plasma-enhanced chemical vapour deposition technique.
Interfacial Sliding in Back-End Interconnect Structures in Microelectronic Devices
Authors: Peterson K.A. , Park C. , Dutta I.
Published: February 2017

Deformation of interconnect structures at the back-end of microelectronic devices during processing or service can have a pronounced effect on component reliability. Here, we use atomic force microscopy (AFM) to study plastic deformation and interfacial sliding of Cu interconnects lines on Si. The behavior of both stand-alone Cu lines and lines embedded in a low K dielectric was studied. Following thermal cycling, changes were observed in the in-plane Cu line dimensions, as well as the out-of plane step height between Cu and dielectric in single layer structures. These were attributed to differential deformation of the Cu/Si and Cu/dielectric material pairs due to thermal expansion mismatch, accommodated by interfacial creep. These results are discussed in light of previous work on the mechanism of interfacial creep. Some preliminary results on the distortion of Cu lines due to package-level stresses are also presented.
New Technologies for Solar Grade Silicon Production
Authors: Karabanov Sergey M.
Published: February 2017

The paper presents the results of study of carbothermic reduction method for solar grade silicon (SG-Si) production. The interconnection between the purity of source materials and derivable silicon has been established. The technological concept of SG-Si production, including source materials preparation, carbothermic process, silicon filtration and crystallization is suggested. The comparative analysis data of different methods of SG-Si is given.
Phenomenological and Elementary Reaction Analysis of Poly-crystalline Silicon CVD Process
Authors: Shimizu Ryosuke , Januma Tadashi , Ogino Masaaki , Sugiyama Masakazu , Koshi Mitsuo , Shimogaki Yukihiro
Published: February 2017

Thickness uniformities of poly-crystalline silicon thin films, deposited by a commercial LPCVD reactor, were investigated through a phenomenological and elementary reaction analysis. To understand the deposition rate and its profile in radius direction of ø 6”h silicon wafer, concentration distributions of film precursors were examined by solving basic diffusion equations of film precursors in the CVD system. The experimental thickness distribution can be simulated very well with the solution by optimizing η, the sticking probabilities of the precursors. While most of the silicon deposition was made by source precursor (mono-silane, SiH4), two kinds of intermediate species with sticking probabilities of 5X10-2 and 7X10-4 were found to contribute the deposition. Subsequently, elementary chemical reaction analysis of poly-crystalline silicon CVD process was performed using ChemKinTM and two chemical species, SiH2 and Si2H6, were identified as the possible candidates for the intermediate species.
Interfacial Adhesion Study of Porous Low-K Dielectrics to CVD Barrier Layers
Authors: Lee Jeffrey A. , Wetzel Jeffrey T. , Merrill Caroline , Ho Paul S.
Published: February 2017

The present paper discusses the four-point bending technique employed at The University of Texas at Austin (UT Austin) to characterize adhesion strength of ultra low-k dielectric materials to CVD barrier layers. Adhesion energy between an ultra low-k dielectric material and a barrier layer was measured as a function of porosity (2.0 < k < 2.3). It was found that the fracture energy decreases with the dielectric constant, which correlates with mechanical properties such as Young's modulus and hardness. Adhesion measurement data was also obtained for different lowk / barrier layer interfaces. The independence of interfacial fracture energy on the type of interface suggests that cohesive failure occurs in the low-k material layer and not at the interface. In addition, the very low fracture energies (G < 3 J/2) confirm the weak mechanical properties of such highly porous materials. Experimental results are illustrated with analysis of failure surfaces using Auger Electron Spectroscopy and Scanning Electron Microscopy.
A Correlation Study of Thermal Stability on Porous Low k
Authors: Chow Y.F. , Foo T.H. , Shen L. , Pan J.S. , Du A.Y. , Xing Z.X. , Yuan Y.J. , Li C.Y. , Kumar R. , Foo P.D.
Published: February 2017

The thermal stability of organic porous low k, porous SiLK with a dielectric constant of 2.4, has been studied. Organic low k material SiLKTM, non-porous SiLK, with a dielectric constant 2.8 is used as a baseline for comparison. Each sample was subjected to annealing cycles, where each cycle was conducted in a vertical furnace for one hour in an N2 ambient. The annealing temperature was set at either 430°C or 450°C. After every alternate cycle, the film properties were measured and compared to the unannealed sample for changes in film shrinkage, refractive index, dielectric constant, roughness, breakdown voltage, pore size, hardness and Young's modulus. Changes in film properties were investigated and evaluated by using opti-probe, FTIR, XPS, AFM, mercury probe, nano-indentation, SEM and TEM techniques.
Length Effects on the Reliability of Dual-Damascene Cu Interconnects
Authors: Wei F. , Gan C. L. , Thompson C. V. , Clement J. J. , Hau-Riege S. P. , Pey K. L. , Choi W. K. , Tay H. L. , Yu B. , Radhakrishnan M. K.
Published: February 2017

We have carried out experiments on dual-damascene Cu interconnects with different lengths. We find that at short lengths, similar to Al-based interconnects, the reliability of Cubased interconnects improves. Also like Al interconnects, some short Cu segments do not form voids that cause failure before back-stresses prevent the further growth of voids. However, unlike Al-based interconnects, there is no apparent deterministic current-density line-length product (jL) for which all lines are immortal. This is related to the absence of a conducting refractory-metal overlayer in Cu-technology that can shunt current around small voids. Also unlike Al, we find that at long lengths a sub-population of Cu lines is immortal. We propose that this is the result of rupture of the thin refractory metal liner at the base of the dual-damascene Cu vias. As a consequence of this complex behavior, median times to failure and lifetime variations are minimum at intermediate line lengths.
Effect of Metallic Contamination on Interface Properties and Oxide Reliability
Authors: Oborina Elena , Campbell Scott , Hoff Andrew M. , Gilbert Richard , Persson Eric , Simpson Darrell
Published: February 2017

New and emerging process technologies such as Damascene interconnect, metal gate and metal silicide processes are creating metal contamination control challenges for current and future generations of integrated circuits. In this work, we studied the contamination of oxidized silicon wafers by several metals of industrial importance including copper, cobalt, sodium, iron and nickel. Contamination was applied by spin-coating in a range from 20ppb to 500 ppb. Such levels are representative of exposure challenges induced during chemical processes such as CMP (chemical mechanical planarization) cleans. Solvated contamination ions were driven into the oxide layer by corona temperature stress (CTS). The concentrations of metallic species incorporated within the oxide by CTS were quantified using VPD-ICPMS (vapor phase decomposition) and SIMS (secondary ion mass spectrometry) surface analysis techniques. Noncontact COCOS (Corona Oxide Characterization of Semiconductor) methods were employed to measure the electrical properties and reliability of nascent and contaminated oxide/silicon structures. We show that in the absence of significant signals from the surface analysis techniques the COCOS methods show signatures of the metallic contamination in the measurement results.
Ultrathin Si3N4 Films Deposited From Dichlorosilane For Gate Dielectrics Using Single-Wafer Hot-Wall Rapid Thermal CVD
Authors: Senzaki Yoshihide , Brichko Yakov , Barelli Carl , Herring Robert , Teasdale Dana , Schaefer Marci , Sisson Joseph
Published: February 2017

Using a hot-wall rapid thermal system which permits single-wafer processing, thin gate dielectrics consisting of silicon nitride films were fabricated by low pressure chemical vapor deposition (LPCVD). Nitride layers deposited from dichlorosilane (DCS) and ammonia exhibited greatly reduced electrical leakage current compared to silane-based nitride films which are conventionally used in lamp-based single-wafer rapid thermal technology. After a postdeposition anneal, the DCS-based gate dielectric films showed better diffusion barrier properties against boron penetration than silane-based gate dielectrics at a dopant activation temperature of 1000°C.
High Purity Silicon Amido Precursors for Low Temperature Cvd of High к Gate Silicates
Authors: Borovik A.S. , Xu C. , Hendrix B. C. , Roeder J. F. , Baum T. H.
Published: February 2017

High purity silicon amido precursors provide a route to low temperature CVD of silicate gate dielectrics. We have developed a straightforward synthetic method for the production of high purity Si[N(CH3)2]4, Si(NMeEt)4, HSi(NEtMe)3 and HSi(NEt2)3 in high yield. These compounds were fully characterized by NMR, GC/MS, ICP-MS, ICchlorine, and elemental analysis. Their solution compatibility with an Hf amide source was also examined by chemical techniques. Low temperature CVD of metal silicate films is also demonstrated.
Metrology Study of Sub 20Å Oxynitride by Corona-Oxide-Silicon (COS) and Conventional C-V Approaches
Authors: Hung Pui Yee , Brown George A. , Zhang Michelle , Bennett Joe , AL-Shareef Husam N. , Young Chadwin , Oroshiba Chris , Diebold Alain
Published: February 2017

This work aims to develop an in-line corona-oxide-silicon (COS) monitoring strategy for the sub 20 Å oxynitride gate dielectrics. The oxynitride gate dielectrics were composed of In-Situ Steam Generated oxide (ISSG) oxide at thickness of 16Å and 20Å which were exposed to Remote Plasma Nitridation (RPN) for various time durations. The nitrogen density in the oxynitride established by SIMS and nuclear reaction analysis (NRA), was correlated with the non-contact electrical measurements taken by Quantox™. The non-contact electrical parameters included interface trap density (Dit), flatband voltage (Vfb), total charge (Qtot), equivalent oxide thickness (EOT) and leakage current. The pre-anneal Dit measurements exhibited a strong correlation with the nitrogen density and was the most sensitive process monitoring parameter. The Vfb and Qtot, on the other hand, showed little correlation. The ISSG/RPN oxynitride process required further optimization because there was no significant reduction in EOT for the annealed samples. Furthermore, the leakage current in the pre-annealed samples increased with the RPN exposure possibly indicating plasma damage. Conventional MOS C-V measurements were also conducted. Similar to the Qunatox™ results, there were no reductions in EOT or current density. A comparison between the C-V and the Quantox™ data indicated no simple linear relationship between these two techniques. Due to the limited samples used for the Quantox™/ C-V comparison, a more extensive work is required to confirm the present observation.
Si(100) Surface Cleaning Using Sr and SrO
Authors: Wei Yi , Hu Xiaoming , Liang Yong , Jordan D.C. , Craigo Brad , Droopad Ravi , Yu Z. , Demkov Alex , Edwards John L. , Moore Karen , Ooms William J.
Published: February 2017

A method for removing SiO2 and producing an ordered Si(100) surface using Sr or SrO has been developed. In this technique, a few monolayers of Sr or SrO are deposited onto the as received Si(100) wafer in a ultrahigh vacuum molecular beam epitaxy system. The substrate is then heated to ∼800°C for about 5 minutes, the SiO2 is removed to leave behind a Sr terminated Si(100) surface. This Sr terminated Si(100) surface is well suited for the growth of crystalline high k dielectric SrTiO3 films. Temperature programmed desorption measurements were carried out to understand the mechanism of removing SiO2 from Si(100) using Sr or SrO. The species we observed coming off the surface during the temperature cycle was mainly SiO and O, no significant amount of Sr containing species was observed. We conclude that the SiO2 removal is due to the catalyst reaction SiO2 + Sr (or SrO) → SiO (g) + O + Sr (or SrO). The reaction happened through several intermediate steps. The reaction SiO2 + Si → 2SiO (g) at the SiO2/Si interface is limited and the pit formation is suppressed. The main roles that Sr or SrO play during the oxide removal process are catalysts promoting SiO formation and preventing further etching and the formation of pits in the substrate.
On the Argon Annealing-Based Improvements of the Properties of Ultra-Thin Oxynitrides Nitrided with NH3
Authors: Dasgupta Anindya , Takoudis Christos G. , Martel Greg
Published: February 2017

Thermally grown Si3N4 films in NH3 are known to have a higher dielectric constant and a higher N concentration than silicon oxynitrides, although they incorporate hydrogen atoms that induce hot electron carriers during subsequent high temperature processing. Further, a silicon nitride is difficult to grow over about 6 nm thick, due to self-limiting growth. One alternative is SiOxNy post-nitrided with NH3.

In this work, we study the scope of improvement of Ar annealed nitrided oxynitrides as a function of annealing temperature and duration. Secondary ion mass spectroscopy (SIMS) studies of the nitrogen and hydrogen profiles suggest increasing N and H removal with increasing annealing time and temperature. Electrical characterizations have been performed to determine the total charge (Qox) and interface trap (Dit) densities at different processing conditions, before and after the annealing step. Post-annealing steps are not found to yield improvements of the electrical properties of these dielectric films. Instead, sometimes Qox is even seen to increase (e.g., after a 30 min Ar anneal at 1000 °C). Therefore, an optimization of such annealing steps is essential in designing nanodielectrics with desired nitrogen amounts and N concentration profiles as well as in understanding related process-structure-function relationships.
Characteristics of Silicon Implanted Trap Memory in Oxide-Nitride-Oxide Structure
Authors: Kalkur T.S. , Peachey Nathaniel , III Tom Moss
Published: February 2017

In this work, non-volatile memory based on silicon nano trap was implemented by implanting silicon into oxide-nitride-oxide layers(ONO) on silicon. The charge storage effects in these memory structures were measured using capacitance-voltage techniques in polysilicon-ONO- silicon structures in terms of silicon implantation dose. Without silicon implantation, the devices did not the threshold shift (memory window). The memory window was found to be dependent on silicon implantation dose and DC bias (programming) voltage. The memory window did show any degradation by annealing in nitrogen or forming gas environment at 450 °C for 30 minutes. Nano trap memory elements were fabricated with 0.35 micron technology showed encouraging results up to 1e5 program/erase cylces.
Evolution of Sputtered HfO2 Thin Films Upon Annealing
Authors: Nam S. , Nam S.W. , Yoo J.H. , Ko D.H.
Published: February 2017

We investigated the evolution of the physical and electrical properties of HfO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing. The HfO2 thin films deposited at room temperature were amorphous, while the films after annealing were poly crystalline. The crystallization temperature of the HfO2 thin films was dependent on the annealing methods (RTP or Furnace) and ambient (nitrogen or oxygen). The microstructures of HfO2 thin gate oxides of Tox <15A thick were analyzed by HRTEM, XPS and XRD. We also focused on the interfacial layer between HfO2 thin films and silicon substrates. Due to its high oxygen diffusivity, any annealing led to oxygen diffusion rapidly through the HfO2 films. The EOT increased upon annealing due to the increased SiO2-containing layer. The HfO2 thin films deposited at room temperature have the undesirable interfacial states due to the surface damage by sputtering. We found that the HfO2 thin films <15A thick were optimized by RTP or furnace annealing.
Comparison of Mocvd Precursors for Hf1-xSixO2 Gate Dielectric Deposition
Authors: Hendrix B.C. , Borovik A.S. , Wang Z. , Xu C. , Roeder J.F. , Baum T. H. , Bevan M.J. , Visokay M.R. , Chambers J.J. , Rotondaro A.L.P. , Bu H. , Colombo L.
Published: February 2017

This study investigates and compares the deposition of Hf1-xSixO2 films from two suites of metalorganic CVD precursors. The first precursor suite has oxygen coordinated to the Si or Hf center and includes β-diketonate, alcoxide and acetoxy ligands. The second precursor suite has alkylamido ligands, which have nitrogen coordinated to the Hf or Si center. The process space for deposition of silicates was evaluated for controlling the composition of the silicate films while optimizing deposition rates for a manufacturable single-wafer process. The composition of the film, x, is controlled over the entire range by changing the composition of the precursor solution, Si:Si+Hf. The composition of the films, including hafnium, silicon, oxygen, carbon, and nitrogen content were measured by XPS. Both suites of precursors provide routes by which composition can be controlled in fully oxidized films with low carbon and nitrogen content. Film deposition rates are consistent with manufacturing requirements. The interfacial layers that were observed by HRTEM between the film and the substrate were thin (< 10Å) and possibly graded in composition.
Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation
Authors: Nandini Alok , Roy U. , Mallikarjunan A. , Kumar A. , Fortin J. , Shekhawat G.S. , Geer Robert , Dovidenko Katherine , Lifshin Eric , Bakhru H. , Lu T.M.
Published: February 2017

Thin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.
Device Scaling Effects on Substrate Enhanced Degradation in MOS Transistors
Authors: Mohapatra Nihar Ranjan , Mahapatra Souvik , Rao V. Ramgopal
Published: February 2017

This paper analyzes in detail the substrate enhanced gate current injection mechanism and the resulting hot-carrier degradation in n-channel MOS transistors and compares the results with conventional channel hot carrier injection mechanism. The degradation mechanism is studied for different values of substrate voltage over a wide range of channel length and oxide thickness. Stress and charge pumping measurements are carried out to study the degradation under identical bias (gate, drain, substrate) and gate current condition. The influence of device dimensions on the gate injection efficiency and hot carrier degradation is also studied. Results show that the degradation under negative substrate voltage operation is strongly dependent on the transverse electric field and spread of the interface trap profile. The possible mechanism responsible for such trends is discussed. It is also found that, under identical gate current (programming time in flash memory cells), the degradation is less for higher negative substrate bias, which is helpful in realizing fast and reliable flash memories.
Synthesis and Characterization of Methyltriethoxysilane Based Low Permittivity (Low-k) Polymeric Dielectrics
Authors: Gu Z. , Jeyakumar R. , Sivoththaman S. , Nathan A.
Published: February 2017

A low-permittivity (low-k) polymeric material has been synthesized using methyltriethoxysilane as base material. The films were reproduceably deposited, by spin-coating on Si wafers with a uniform thickness in the range of 0.3-0.5μm depending on speed. The parameters for spin coating (spin speed and spin time etc.,) have been optimized. The effects of various curing conditions on the structural and dielectric properties have been studied. Fourier Transform Infrared Spectroscopy (FTIR) shows prominent peaks of Si-CH3 stretch and Si-O stretch modes. Test structures on silicon were fabricated to measure the dielectric constant (k) of the material. The values of k were found to be in the range of 2.6-1.2 for annealing temperatures 150°C-450°C. The dielectric constant decreases as the curing temperature increases.
Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees
Authors: Gan C. L. , Thompson C. V. , Pey K. L. , Choi W. K. , Wei F. , Yu B. , Hau-Riege S. P.
Published: February 2017

Electromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.
The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
Authors: Kim H. , Cabral C. , Lavoie C. , Rossnagel S.M.
Published: February 2017

Ta films were grown by plasma-enhanced atomic layer deposition (PE-ALD) at temperatures from room temperature up to 300 °C using TaCl5 as source gas and RF plasma-produced atomic H as the reducing agent. Post-deposition ex situ chemical analyses showed that the main impurity is oxygen, incorporated during the air exposure prior to analysis with typically low Cl concentration below 1 at %. The X-ray diffraction indicates that ALD Ta films are amorphous or composed of nano-grains. The typical resistivity of ALD Ta films was 150-180 μΩ cm, which corresponds to that of β-Ta phase, at a wide range of growth parameters. The conformality of the film is 100 % up to an aspect ratio of 15:1 and 40 % for aspect ratio of 40:1. The thickness per cycle, corresponding to the growth rate, was measured by Rutherford back scattering as a function of various key growth parameters, including TaCl5 and H exposure time and growth temperature. The maximum thickness per cycle values were below 0.1 ML, probably due to the steric hindrance for TaCl5 adsorption. Bilayer structures consisting of Cu films deposited by sputtering and ALD Ta films with various thicknesses were prepared and the diffusion barrier properties of ALD Ta films were investigated by various analysis techniques consisting of X-ray diffraction, elastic light scattering, and resistance analysis. The results were compared with Ta thin films deposited by sputtering with comparable thicknesses. Also, the growth of TaN films by PE-ALD using consecutive exposures of atomic H and activated N2 is presented.
BIOMASSA DAN KEANEKARAGAMAN IKAN DI PERAIRAN ANCOL, TELUK JAKARTA
Authors: Wagiyo Karsono , Hartati Sri Turni
Published: February 2017

Dampak reklamasi pantai di Ancol menghasilkan lingkungan yang tampak lebih bersih indah dan asri. Keadaan ini belum tentu diikuti peningkatan fungsional kondisi perairan dalam mendukung sumber daya perikanan, sehingga perlu diketahui kondisi sumber daya perikanan.
DISTRIBUSI DAN KEPADATAN LUMBA-LUMBA Sfenella longirostris DI LAUT SAWU, NUSA TENGGARA TIMUR
Authors: Faizah Ria , Dharmadi Dharmadi , Purnomo Februanty S.
Published: February 2017

Penelitian yang bertujuan untuk mempelajari distribusi dan kepadalan lumba-tumba Stenella longirostris di peralran Laut Sawu, Nusa Tenggara Timur, dilakukan pada bulan Juli dan Desember 2005. Metod6 yang digunakan adalah dislance sampling menggunakan line tnnsect dengan duat plattom.
Improvement in the Initial Implant Stability Quotient Through Use of a Modified Surgical Technique
Authors: Díaz-Sánchez Rosa-María , Delgado-Muñoz José-María , Hita-Iglesias Pilar , Pullen Kyle T. , Serrera-Figallo María-Ángeles , Torres-Lagares Daniel
Published: February 2017

To ensure similar primary implant stability measured by resonance frequency analysis (RFA) could be obtained in different jawbone densities by using a specific surgical drilling protocol and, to correlate those RFA measurements with factors related to the implant design, width, and length, we are performed a 1-year prospective clinical study was carried out using 27 subjects. A total of 67 hydrophilic titanium implants were placed using a standard 2-stage implant placement protocol. The bone type at each implant site was determined by evaluation of a preoperative, high-resolution cone beam computerized tomography (CBCT) scan. A modified drilling protocol was used in softer bone (types 2, 3, and 4) that allowed for greater implant thread contact with the surrounding bone. The implant stability quotient (ISQ) was measured at 4 different times during the study: initially it was determined immediately after implant placement, then again at stage 2 uncovering surgery, then at 6 months' postplacement and, and finally at 1 year postplacement. Data collected immediately after implant surgery demonstrated a high correlation (R2 = .99) between the ISQ and bone type classification. An overall trend toward a higher ISQ was found over the 1-year study period for all types of bone. Implants remained clinically and radiographically stable during the 1-year study period. Our data allow conclude that the primary stability of 2-staged loaded implants placed in different bone types can be optimized by applying this surgical drilling protocol during the implant placement. The ISQ method was found to be a reliable predictor of implant stability.
Neuromyelitis optica: phenotypic characteristics in a Brazilian case series
Authors: Del Negro Maria Cristina , Marinho Patricia Beatriz Christino , Papais-Alvarenga Regina Maria
Published: February 2017

ABSTRACT The definition of neuromyelitis optica (NMO) is still evolving. In 2015, the International Panel for NMO Diagnosis was convened to develop revised diagnostic criteria. There have been few studies on NMO in the Brazilian population. Objective To describe the characteristics of 34 Brazilian NMO patients. To evaluate the contribution of the 2015 criteria to the diagnosis of NMO spectrum disorders (NMOSD) in 40 patients with longitudinal extensive transverse myelitis (LEMT). Methods This is a retrospective, descriptive and analytic study. Results Among NMO patients, there was a predominance of women, with onset in the fourth decade of life, and AQP4-IgG seropositivity in 73.5%. The diagnosis of NMOSD was established in 37.5% of LETM patients according to AQP4-IgG positivity and in 5% of LETM patients if the AQP4-IgG result was unknown. Conclusions The characteristics of this series are similar to those of other Western populations. The AQP4-IgG testing assists in the diagnosis of NMOSD.
Experimental neurocysticercosis: absence of IL-4 induces lower encephalitis
Authors: Silva Hidelberto Matos , Vinaud Marina Clare , Lino Júnior Ruy de Souza
Published: February 2017

ABSTRACT Neurocysticercosis (NCC) is the most severe clinical manifestation of cysticercosis. One of the factors responsible for its symptomatology is the host inflammatory response. Therefore the influence of interleukin 4 (IL-4) on the induction of encephalitis in experimental NCC was evaluated. Methods BALB/c (WT) and BALB/c (IL-4-KO) mice were inoculated intracranially with Taenia crassiceps cysticerci and euthanized at 7, 30, 60 and 90 days later, the encephala removed and histopathologically analyzed. Results The absence of IL-4 induced greater parasitism. In the initial phase of the infection, IL-4-KO showed a lower intensity in the inflammatory infiltration of polimorphonuclear cells in the host-parasite interface and intra-parenquimatous edema. The IL-4-KO animals, in the late phase of the infection, showed lower intensity of ventriculomegaly, encephalitis, and meningitis, and greater survival of the parasites in comparison with the WT animals. Conclusion The absence of IL-4 induced lower inflammatory infiltration, ventriculomegaly and perivasculitis in experimental NCC.
Cuidado filial e o relacionamento com o idoso em famílias de diferentes nacionalidades
Authors: Faller Jossiana Wilke , Zilly Adriana , Alvarez Angela Maria , Marcon Sonia Silva
Published: February 2017

RESUMO Objetivo: identificar de que forma ocorrem o cuidado filial e o relacionamento com o idoso em famílias de diferentes nacionalidades. Método: estudo qualitativo, realizado em município da tríplice fronteira do Paraná com 33 idosos de cinco nacionalidades e que adotou como estratégia teórico-metodológica o Interacionismo Simbólico e a Grounded Theory. Resultados: entre os libaneses, a religião muçulmana direciona a conduta dos filhos em obediência e respeito aos pais; entre os franceses, destacam-se relações familiares distantes e o cuidado asilar. Para os paraguaios, a relação familiar é estreita; os chineses têm o cuidado filial como obrigação tácita; e os brasileiros costumam acolher e cuidar dos pais na velhice. Conclusão: houve predomínio do cuidado familial, mas as tradições de cada sociedade direcionam as ações desse cuidado, sendo necessário, para a prática assistencial, que os profissionais da saúde reconheçam o contexto no qual os idosos estão inseridos.
A segurança do paciente nos caminhos percorridos pela enfermagem brasileira
Authors: Gomes Andréa Tayse de Lima , Salvador Pétala Tuani Candido de Oliveira , Rodrigues Cláudia Cristiane Filgueira Martins , Silva Micheline da Fonseca , Ferreira Larissa de Lima , Santos Viviane Euzébia Pereira
Published: February 2017

RESUMO Objetivo: sumarizar as dissertações e teses produzidas por enfermeiros disponíveis no Catálogo de Teses e Dissertações da Associação Brasileira de Enfermagem, do volume XIX ao XXXII, que abordam a segurança do paciente. Método: pesquisa documental. Após coleta de dados, analisaram-se as seguintes variáveis: nível acadêmico, instituição de ensino, ano, local, tipo de serviço, objeto de estudo, desenho metodológico, sujeitos, protocolo prioritário de segurança do paciente, implicações e recomendações finais. Resultados: encontrados 8.720 resumos, dos quais 53 (0,61%) foram analisados. Houve predomínio de dissertações (n=19; 35,85%) relacionadas à redução do risco de quedas e úlcera por pressão (n=24; 45,28%), do tipo descritivo (n=21; 39,62%), quantitativo (n=16; 30,19%), no cenário hospitalar (n=16; 30,19%), utilizando escalas e protocolos (n=6; 11,32%). Conclusão: observou-se tendência para desenvolvimento de estudos relacionados à segurança do paciente no cenário hospitalar, com ênfase na redução do risco de úlcera por pressão.
Letramento funcional em saúde e conhecimento de doentes renais em tratamento pré-dialítico
Authors: Moraes Katarinne Lima , Brasil Virginia Visconde , Oliveira Gabriela Ferreira de , Cordeiro Jacqueline Andréia Bernardes Leão , Silva Antonio Márcio Teodoro Cordeiro , Boaventura Rafaela Peres , Munari Denize Bouttelet , Ribeiro Canhestro Mônica
Published: February 2017

RESUMO Objetivo: analisar o letramento funcional em saúde (LFS) e o conhecimento sobre doença renal crônica de 60 pacientes em tratamento pré-dialítico. Método: estudo transversal. O LFS foi mensurado pelo instrumento B-TOFHLA; e o conhecimento, por questionário. Foram realizados testes de correlação de Pearson e Qui-quadrado e modelos de regressões lineares. Resultados: todos entrevistados apresentaram LFS inadequado, e a maioria apresentou conhecimento insuficiente em relação à doença e ao tratamento. Menor escolaridade foi fator preditivo para piores escores de LFS. Conhecimento insuficiente foi relacionado à idade e ao comprometimento cognitivo. Conclusão: embora não tenha sido encontrada associação entre as variáveis preditivas, a limitada capacidade de obter e usar informações relacionadas à saúde e o conhecimento insuficiente em relação à própria doença e tratamento podem contribuir para piores desfechos de DRC. São necessárias estratégias de intervenções adequadas ao limitado LFS e maior conhecimento e habilidade dos profissionais para lidar com o assunto.
Intervenção educacional de enfermagem para redução da hiperfosfatemia em pacientes em hemodiálise
Authors: Stumm Eniva Miladi Fernandes , Kirchner Rosane Maria , Guido Laura de Azevedo , Benetti Eliane Raquel Rieth , Belasco Angélica Gonçalves Silva , Sesso Ricardo de Castro Cintra , Barbosa Dulce Aparecida
Published: February 2017

RESUMO Objetivo: avaliar a efetividade de uma intervenção educacional de enfermagem para redução da hiperfosfatemia em pacientes renais crônicos em hemodiálise. Método: estudo quase experimental realizado com 63 pacientes hiperfosfatêmicos em hemodiálise. A intervenção se constituiu em orientar e disponibilizar um manual impresso e ilustrado aos pacientes, contendo informações sobre o controle da doença. Foi solicitado o preenchimento de um checklist diário, com finalidade recordatória dos aspectos abordados no manual. Os exames laboratoriais e a intensidade do prurido foram analisados no início do estudo, aos 30 e 60 dias após a intervenção educacional. Resultados: a média de idade dos participantes foi 58±13,1 anos e tempo de tratamento de 51,1±44,7 meses. Houve redução dos valores séricos do fósforo de 7,06±1,43 para 5,80±1,53 (p<0,001) e da intensidade do prurido após a intervenção. Conclusão: a Intervenção Educacional de Enfermagem foi efetiva para redução do fosfato e diminuição do prurido nos pacientes hiperfosfatêmicos.
Processo de enfermagem na saúde mental: revisão integrativa da literatura
Authors: Garcia Ana Paula Rigon Francischetti , Freitas Maria Isabel Pedreira de , Lamas José Luiz Tatagiba , Toledo Vanessa Pellegrino
Published: February 2017

RESUMO Objetivo: identificar evidências da literatura sobre a aplicação do processo de enfermagem no cuidado desenvolvido pelo enfermeiro na saúde mental. Método: revisão integrativa da literatura, entre 1990 e 2013, nas bases PubMed, Scopus, CINAHL e LILACS. Descritores: processos de enfermagem, saúde mental, cuidados de enfermagem. Resultados: identificaram-se 19 artigos. Uso limitado e parcial do processo de enfermagem no cuidado estabelecido por meio da relação terapêutica que respeita a individualidade do paciente. Observaram-se propostas de cuidados sistematizados para pacientes que apresentam aspectos patológicos no limite entre físico e psíquico, podendo ser uma resposta à influência da prática baseada em evidências. Conclusão: constatou-se movimento antagônico entre cuidado pautado na relação e situado na padronização de diagnósticos que respondem ao mal-estar físico. Verificou-se falta de evidência para o uso do processo de enfermagem na saúde mental e aponta-se para necessidade da criação de novas possibilidades de diálogo entre perspectivas relacional e biológica.
Ambiente das práticas de enfermagem e satisfação profissional em unidades críticas
Authors: Oliveira Elaine Machado de , Barbosa Ricardo Luis , Andolhe Rafaela , Eiras Flavia Regina Cocuzza das , Padilha Katia Grillo
Published: February 2017

RESUMO Objetivo: analisar a associação entre ambiente das práticas de enfermagem e satisfação profissional em Unidades de Terapia Intensiva (UTI). Método: estudo transversal, realizado em 8 UTIs adulto de um hospital público universitário, no período entre 2012 e 2015. Para investigar o ambiente das práticas de enfermagem e satisfação profissional, foram aplicados, respectivamente, os instrumentos Nursing Work Index-Revised (NWI-R), nas versões resumidas, e Índice de Satisfação Profissional (ISP). Resultados: participaram do estudo 100 (34,84%) enfermeiros e 187 (65,15%) técnicos/auxiliares de enfermagem. O ambiente foi favorável para autonomia e relações e apresentou fragilidade para controle das práticas e suporte organizacional. O escore ISP indicou baixa satisfação profissional. As variáveis "ambiente das práticas", "tempo de trabalho em UTI" e "disposição para o trabalho" foram associadas à satisfação profissional. Conclusão: investir no ambiente das práticas, nos fatores que promovem a disposição e o tempo de experiência na UTI aumenta a satisfação profissional de enfermagem.
Fatores associados à exposição ocupacional com material biológico entre profissionais de enfermagem
Authors: Negrinho Nádia Bruna da Silva , Malaguti-Toffano Silmara Elaine , Reis Renata Karina , Pereira Fernanda Maria Vieira , Gir Elucir
Published: February 2017

RESUMO Objetivo: identificar os fatores associados à exposição ocupacional com material biológico entre profissionais de enfermagem. Método: estudo transversal, realizado em um hospital, de alta complexidade, do interior do Estado de São Paulo, Brasil. Foram entrevistados profissionais de enfermagem no período de março a novembro de 2015. Todos os aspectos éticos foram contemplados. Resultado: dentre 226 profissionais entrevistados, 17,3% sofreram exposição ocupacional com material biológico potencialmente contaminado, sendo 61,5% por via percutânea. Fatores, como a faixa etária (p=0,003), a experiência na enfermagem (p=0,015) e na instituição, (p=0,032) estiveram associados ao acidente. Conclusão: a maior parte dos acidentes com material biológico entre os profissionais de enfermagem ocorreu por via percutânea sendo que a idade, experiência profissional e na instituição compreenderam fatores associados à exposição ocupacional.
Ultrasound of ankles in the diagnosis of complications of chikungunya fever
Authors: Mogami Roberto , Vaz João Luiz Pereira , Chagas Yêdda de Fátima Barcelos , Torezani Rodrigo Sperling , Vieira André de Almeida , Koifman Ana Célia Baptista , Barbosa Yasmin Baptista , Abreu Mirhelen Mendes de
Published: February 2017

Abstract Objective: To describe the main ultrasound findings of chikungunya fever in the ankle. Materials and Methods: This was a cross-sectional observational study involving 52 patients referred to the Hospital Universitário Pedro Ernesto and presenting with clinical and biochemical evidence of chikungunya fever. The examinations were performed by a radiologist with more than 20 years of experience in ultrasound. Results: The predominant gender was female (in 88.5%), and the mean age was 58.4 years. The majority (61.5%) of the patients came from the northern part of the city of Rio de Janeiro, and 46.2% were using corticosteroids to treat inflammatory symptoms. The most common alterations observed by ultrasound were joint effusion (in 69.2%), tenosynovitis (in 59.6%), cellulitis (in 46.2%), Kager's fat pad thickening (in 29.9%), myositis (of the soleus or flexor hallucis longus muscle) (in 17.3%), retrocalcaneal bursitis (in 5.8%), tendon ruptures (in 3.8%), and increased vascular flow on power Doppler (in 3.8%). Conclusion: Signs of synovitis and tenosynovitis were the main ultrasound findings in a predominantly female population with a mean age of 58.4 years. Further studies are needed in order to define the role of ultrasound in the follow-up of such patients.
A crise do federalismo cooperativo nas políticas de saúde no Brasil
Authors: Ribeiro José Mendes , Moreira Marcelo Rasga
Published: February 2017

RESUMO Este artigo analisa os aspectos principais dos sistemas políticos federativos segundo teorias clássicas e contemporâneas e o caso do setor saúde brasileiro. O Brasil apresenta uma configuração federativa fundada na cooperação como resultado da transição democrática na qual foram fortalecidas as dimensões consensuais da democracia. Por outro lado, o enfraquecimento de aspectos madisonianos de separação de funções e revisão judicial comprometeu a coordenação política e a responsabilização na política de saúde. Argumenta-se que os aspectos cooperativos são comprometidos pela singularidade de municípios com poder federativo sem a criação de instituições compensatórias dos déficits competitivos.
Estado e políticas de equidade em saúde: democracia participativa?
Authors: Souto Kátia Maria Barreto , Sena Ana Gabriela Nascimento , Pereira Vinicius Oliveira de Moura , Santos Lia Maria dos
Published: February 2017

RESUMO Estado, políticas de equidade e participação social: experiência de gestão participativa na construção e na implementação de políticas públicas. Pode a saúde tornar-se um espaço de construção de cidadania que contribua com a redução das desigualdades sociais? Os limites do Estado brasileiro podem ser impeditivos para o desenvolvimento de uma gestão participativa, na qual os movimentos sociais deveriam estar aptos, de fato, a opinar e participar sem perder sua autonomia? O presente ensaio traz elementos para essas reflexões e cita possíveis avanços em tais questões, a partir da implantação de políticas de equidade na saúde, apontando, ainda, potencialidades de articulação entre as esferas da gestão do Sistema Único de Saúde, como espaço, também, de gestão participativa.