bluuebunny/crossref_metadata_2025 huggingface dataset:
LATTICE DISORDER PRODUCED IN Si BY 40-keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR
Authors: Hart R. R. , Marsh O. J.
Published: January 2004

The lattice disorder produced by 40 keV boron ions in Si at implant temperatures of −120 and 23°C has been measured by means of the channeling technique for a 140-keV proton beam. At −120° there are ∼ 650 displaced Si atoms per incident boron ion for random and 〈111〉 aligned implants, respectively. In contrast to the mild dependence noted earlier for Sb implants, there is a marked dependence of residual lattice disorder upon implant temperature for boron implants in this temerature range. Hall effect measurements on the implanted layers indicate that, in the dose range for boron investigated here, the electrical yield (number of acceptors per implanted ion) after a 600°C anneal increases with the amount of disorder contained in the implanted layer, with the greatest yield occurring in implants containing a fully amorphous layer. The major effect of implant temperature is to determine the amount of residual disorder.
LAMELLAR EUTECTIC InSb + Sb FILMS AS INFRARED POLARIZERS
Authors: Davis N. M. , Clawson A. R. , Wieder H. H.
Published: January 2004

Lamellar eutectic InSb + Sb films were grown by electron beam microzone crystallization. The Sb lamellae within the InSb matrix constitute a grating which acts as an infrared polarizer beyond the InSb absorption edge. The spectral dispersion of the transmittance of such polarizers between 2 and 20 μm in wavelength with the electric vector of the incident radiation oriented parallel and perpendicular to the axes of the lamellae is qualitatively consistent with theoretical expectations.
SELF-FOCUSING AND PLASMA FORMATION IN TRANSPARENT MEDIA
Authors: Engelhardt Wolfgang
Published: January 2004

On focusing a laser beam on transparent materials, we have observed luminous channels within the media, which we attribute to two effects. The beam is first self-focused because of nonlinearity of the material, and breakdown occurs. A second self-focusing effect is then possible in the plasma so produced. Divergence of the beam is prevented, and further heating occurs.
THE RESISTIVE CRITICAL FIELD OF SEVERELY DRAWN NIOBIUM
Authors: Pearson J. R. , Rose R. M.
Published: January 2004

The resistive critical field of severely drawn Nb increases far beyond the predictions of the GLAG theory for a homogeneous type-II superconductor and becomes anisotropic. Although no model fits the situation exactly, nucleation of superconductivity at dislocation cell walls is a possible explanation.
PHOTOINDUCED STRAIN IN SILICON-DOPED YTTRIUM IRON GARNET [YIG(Si)]
Authors: Dillon J. F. , Gyorgy E. M. , Remeika J. P.
Published: January 2004

The alternate application of two orthogonal linear polarizations of light to YIG(Si) leads to cyclic elongation and contraction. This effect was observed at liquid-helium temperatures, and is related to the recently reported photoinduced magnetic anisotropy and dichroism.
THE EFFECT OF TWIST ON ac LOSS AND STABILITY IN MULTISTRAND SUPERCONDUCTING COMPOSITES
Authors: Critchlow R. R. , Zeitlin B. , Gregory E.
Published: January 2004

The effect of twist on a variety of multistrand NbTi superconducting composites has been studied. Twisting reduces the ac loss and increases the stability of the conductors. It is found that a critical twist rate exists beyond which little or no further improvement occurs.
RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SiO2 FILMS
Authors: Hickmott T. W.
Published: January 2004

The optical absorption and electron spin resonance of atomic defects in rf-sputtered SiO2 films have been measured. The properties of the centers are similar to those produced when pure, fused SiO2 is bombarded with neutrons.
PULSES INDUCED IN TUNNELING CURRENTS BETWEEN SUPERCONDUCTORS BY ALPHA-PARTICLE BOMBARDMENT
Authors: Wood G. H. , White B. L.
Published: January 2004

A superconducting tunnel junction was bombarded with alpha particles and the resulting pulses in the quasiparticle tunneling current were observed. The possibility of utilizing this effect in nuclear spectrometry is discussed.
NUMERICAL CALCULATIONS ON SURFACE WAVES IN PIEZOELECTRICS
Authors: Engan H. , Hanebrekke H. , Ingebrigtsen K. A. , Jergan E.
Published: January 2004

Data describing the piezoelectric coupling to surface waves in α-quartz, PZT-4, and LiNbO3 are given.
RADIATION-ENHANCED DIFFUSION OF BORON IN SILICON
Authors: Nelson Daniel G. , Gibbons James F. , Johnson William S.
Published: January 2004

Boron was predeposited in silicon substrates by conventional diffusion techniques and then redistributed by bombarding the substrates with 10- and 50-keV protons. The substrates were held at a fixed temperature in the range 500 to 700°C for the duration of the bombardment. The resulting impurity profiles were determined. The low-energy impurity profiles are characterized by very abrupt junctions while the high-energy impurity profiles are characterized by long tails. No variation of either the 10- or the 50-keV impurity profiles with temperature was seen over the range given above.
AN AUTORADIOGRAPHIC TECHNIQUE FOR OBSERVING CHANNELED PENETRATION OF LOW-ENERGY IONS
Authors: Jech Cestmir
Published: January 2004

A method is described for recording channeling patterns by autoradiographic display of the distribution of the deeply penetrating fraction of Kr-85 ions injected into single-crystal surfaces at various angles with respect to the channeling direction. Using this method, channeling widths were measured for the penetration of low-energy (3 to 10 keV) Kr ions into Si and compared with predicted critical channeling widths.
HIGH SENSITIVITY AUGER ELECTRON SPECTROMETER
Authors: Palmberg P. W. , Bohn G. K. , Tracy J. C.
Published: January 2004

An Auger electron spectrometer for studies of solid surfaces which is considerably more sensitive than currently used instruments has been developed. The greatly improved signal-to-noise ratio of the spectrometer made it possible to display the 0–1000 eV Auger spectrum on an oscilloscope at a scanning rate of 20 000 V/sec. Alternatively, the scanning rate may be reduced to that typical of present instruments (∼2 V/sec) and the primary beam current reduced from 5 × 10−5 to 10−8 A.
PREPARATION AND PROPERTIES OF EPITAXIAL FILMS OF FERROELECTRIC Bi4Ti3O12
Authors: Takei W. J. , Formigoni N. P. , Francombe M. H.
Published: January 2004

Sputtered films of ferroelectric Bi4Ti3O12 have been prepared by using targets containing excess Bi to compensate for loss of Bi in the deposition process. Epitaxial growth has been achieved on MgO and epitaxial Pt substrates. Studies of dielectric properties suggest that the sputtered films are suitable for use in high-capacitance structures. Hysteresis measurements yield spontaneous polarization values for the epitaxial films which are in excellent agreement with those reported for bulk single crystals.
RAPID X-RAY DIFFRACTION TOPOGRAPHY USING A HIGH-GAIN IMAGE INTENSIFIER
Authors: Lang A. R. , Reifsnider K.
Published: January 2004

Instantaneous display of diffracted beams and their rapid photographic recording are achieved through use of a 4-stage light image intensifier (EMI 9694). Beams carrying only 10 x-ray photons sec−1 mm−2 are clearly seen on intensifier output phosphor by the naked eye. With an x-ray tube of 800-W power only and total experiment time less than a minute x-ray projection topographs revealing individual crystal lattice dislocations are obtained by photographing a television display of intensifier output phosphor.
CHARACTERIZATION OF FOREIGN ATOMS AND NATIVE DEFECTS IN SINGLE CRYSTALS OF CADMIUM TELLURIDE BY HIGH-TEMPERATURE CONDUCTIVITY MEASUREMENTS
Authors: Zanio K. R.
Published: January 2004

A method of determining the purity of CdTe which may also be applicable to other compound semi-conductors is presented. The electrical conductivity of undoped and lightly doped CdTe was studied from 600 to 900°C as a function of the partial pressures of its components. At high tellurium over-pressures the conductivity is independent of partial pressure. The conductivity of undoped material depends exponentially upon temperature with an activation energy characteristic of intrinsic conduction. For indium-doped CdTe and for material containing impurities the intrinsic conductivity levels off with a reduction in temperature and becomes characteristic of the foreign atom concentration.
SINGLE MODE OSCILLATION OF A PULSED SINGLY RESONANT OPTICAL PARAMETRIC OSCILLATOR
Authors: Kreuzer L. B.
Published: January 2004

Single mode oscillation of a pulsed singly resonant optical parametric oscillator was achieved by placing a tilted mode selecting Fabry-Perot etalon inside the oscillator cavity. The output power was 25% of that obtained in multimode oscillation without the etalon. Good agreement was obtained between observed and expected spectral width both with and without the etalon inside the optical cavity.
OPTICALLY TRIGGERABLE DOMAINS IN GaAs GUNN DIODES
Authors: Adams R. F. , Schulte H. J.
Published: January 2004

Illumination of an epitaxial Gunn diode in the anode and central active region with the 1-nsec light pulse from a mode-locked He–Ne laser has been observed to trigger a single domain when the diode is biased just below threshold. Cathode illumination of a diode biased above threshold has been observed to inhibit domain nucleation.
THE INTRODUCTION OF CHARGE IN SiO2 AND THE INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER-BASE JUNCTION OF GATED TRANSISTORS
Authors: Verwey J. F.
Published: January 2004

The increase (degradation) of the base current after breakdown of emitter-base junction was studied on silicon planar NPN transistors, with a field electrode (gate) on top of the emitter-base junction. We found that breakdown with a gate voltage positive with respect to the base gave rise to negative charge in the oxide. The place of the maximum in the degraded base current vs gate voltage is shown to be a strong function of the reverse current density.
STRESS-DEPENDENT RAMAN FREQUENCY AND LINEWIDTH IN α-QUARTZ
Authors: Harker Y. D. , She C. Y. , Edwards David F.
Published: January 2004

The experimental results of the stress-dependent frequency and linewidth of two E (128 cm−1, 398 cm−1) and three A1 (207 cm−1, 352 cm−1, 466 cm−1) Raman-active vibrations in α-quartz are reported. A qualitative explanation in terms of anharmonic deformation potential is given.
CRYSTALLIZATION OF AMORPHOUS ANTIMONY FILMS PREPARED BY VACUUM EVAPORATION
Authors: Bahadur Kanwar , Chaudhary K. L.
Published: January 2004

Antimony films in the thickness range of 50 to 250 Å prepared by vacuum evaporation on single crystal KCL substrates at room temperature show an amorphous structure, which changes readily to the crystalline form on exposure to a 40–100-kV electron beam of moderate intensity in the electron microscope. At the nucleation stage thin films show a random orientation on crystallization, whereas thicker, nearly continuous films assume a single crystalline orientation, with (111)metal‖(001)KCl.
A MÖSSBAUER RESONANCE EFFECT STUDY USING A BACKSCATTER GEOMETRY
Authors: Ord R. N.
Published: January 2004

A Mössbauer backscatter system has been designed which is capable of 130% resonance effect for a rolled foil stainless-steel sample having an elliptical-shaped scatter area of 6.46 in.2. This effect is a function of the surface area of the sample and the energy of the detected photon. For a sample surface area greater than 0.5 in.2, the 14.4-keV γ ray is the most efficient. This system is significant for nondestructive testing because sampling times are decreased to minutes.
ON THE PHASE CHARACTERISTICS AND COMPRESSION OF PICOSECOND PULSES
Authors: Fisher Robert A. , Fleck J. A.
Published: January 2004

It is pointed out that published data on the compression of mode-locked Neodymium-glass laser pulses do not require the pulse to have a predominantly positive frequency sweep. It is shown that a random pulse carrier phase function, for example, can account for published experimental observations.
TEMPERATURE DEPENDENCE OF THE ENERGY RELAXATION TIME IN n-InSb
Authors: Whalen J. J. , Westgate C. R.
Published: January 2004

The energy relaxation time τe in n-InSb for the temperature range 1.5 to 20°K has been measured directly in a heterodyne experiment at 69 GHz. A comparison of experimental values for τe with theoretical values calculated for a degenerate electron gas yields a deformation potential constant and a piezoelectric potential constant. Values of 16.2 eV for the deformation potential constant, 1.7 × 104d1/2/cm for the piezoelectric constant, and 280°K for the optical phonon temperature give good agreement between experiment and theory when screening is neglected. The effects of electron degeneracy and screening upon energy relaxation are discussed.
OBSERVATION OF RAMAN SCATTERING BY WATER VAPOR IN THE ATMOSPHERE
Authors: Melfi S. H. , Lawrence J. D. , McCormick M. P.
Published: January 2004

Raman backscatter of a frequency-doubled ruby laser beam by water vapor has been observed in the atmosphere, using an optical radar system. This return along with a Raman nitrogen return, has been used to calculate a relative water-vapor mixing ratio profile in the atmosphere to an altitude of approximately 2 km.
PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200-keV BORON IONS
Authors: Westmoreland J. E. , Mayer J. W. , Eisen F. H. , Welch B.
Published: January 2004

We have investigated the lattice disorder produced in Si by 200-keV B implantations using the standard channeling technique. We found the disorder production strongly temperature-dependent from about −85°C to room temperature. The annealing of the residual disorder present after such a B implantation takes place at higher temperatures. Our results indicate that the nature of the lattice disorder produced in Si by low dose ion implantation depends on the mass of the ion implanted.
SELF-MODE LOCKING AND SATURATION-PULSE SHARPENING IN A ROTATING-MIRROR Q-SWITCHED CO2 LASER
Authors: Marcus S. , McCoy John H.
Published: February 2004

Observation of self-mode-locked pulses with a rotating-mirror Q-switched CO2 laser is reported. Pulses as short as 10 nsec, narrower than the normal CO2 linewidth limit, were obtained. The shortness of these pulses is attributed to saturation broadening of the pulse spectrum.
THIN SEMICONDUCTOR LASER TO THIN PLATELET OPTICAL COUPLER
Authors: Keune D. L. , Holonyak N. , Burnham R. D. , Dapkus P. D. , Dupuis R. D.
Published: February 2004

A method is reported for coupling laser beams into thin structures (∼1 μm) and for easy coupling of optical signals between various thin structures. CdSe platelet lasers, pumped with Ga(AsP) laser diodes (77 °K), are coupled to CdS and Cd(SeS) platelet waveguides.
GRÜNEISEN DATA FROM THE ONE-DIMENSIONAL THERMOELASTIC RESPONSE OF ELASTIC MATERIALS
Authors: Oswald R. B. , McLean F. B. , Schallhorn D. R. , Buxton L. D.
Published: February 2004

A new technique for the direct measurement of the Grüneisen parameter of elastic materials is presented. The technique employs the measurement of the one-dimensional thermoelastic response of materials exposed to a pulsed electron beam. The measured values of the Grüneisen parameter for single crystals of both metals and semiconductors are in excellent agreement with thermal values.
VALUE D0Z* FOR GRAIN BOUNDARY ELECTROMIGRATION IN ALUMINUM FILMS
Authors: Rosenberg R.
Published: February 2004

A value of the constant D0Z* for grain boundary electromigration in alluminum thin films is determined to be 3(± 0.5) × 10−2. Generalized curves are provided for (v̄i/j)T against T−1 for aluminum films. These curves can be used to obtain appropriate ionic velocities at any temperature or current density for films of known grain size.
HIGH POWER XENON LASER ACTION IN HIGH CURRENT PINCHED DISCHARGES
Authors: Papayoanou A. , Gumeiner I.
Published: February 2004

Recent experiments using high current capacitor discharges have produced high power laser action in multiply ionized xenon. Strongest oscillation was found on five simultaneous transitions in the green. These lines had a total peak power of 1.4 kW. In addition, streak camera pictures have shown that the onset of laser action begins and is sustained during the interval of time when the plasma is being compressed (``pinched'') by its self-electromagnetic forces.
COMPARISON OF HF AND DF CONTINUOUS CHEMICAL LASERS: II. SPECTROSCOPY
Authors: Kwok M. A. , Giedt R. R. , Gross R. W. F.
Published: February 2004

Continuous laser action has been observed on several HF and DF vibrational-rotational transitions. The HF lases between 2.6 and 2.9μ and DF lases between 3.6 and 4.1μ. The lines are identified and the relative intensities are shown.
LASER INTERACTION WITH A NICKEL-SAPPHIRE INTERFACE
Authors: Masumura R. A. , Achter M. R.
Published: February 2004

The presence of a 1000-Å-thick evaporated nickel layer on the exit surface of a sapphire disk lowers the laser power required for crystallographic-type damage. A tentative explanation involves a shock phenomenon induced by a confined metal vapor.
PARAMETRIC AMPLIFICATION OF SURFACE ACOUSTIC WAVES
Authors: Chao G.
Published: February 2004

A parametric surface-wave amplifier capable of net terminal gain and an electronic gain of 15 to 25 dB is described. The amplifier consists of a three-frequency lumped-element varactor parametric amplifier attached to the electrical port of an interdigital surface-wave transducer. Less than 2 mW of pump power is required and a bandwidth of about 0.6 % at 106 MHz is achieved.
CRITICAL POWER DISSIPATION IN A SUPERCONDUCTOR
Authors: Rabinowitz Mario
Published: February 2004

The magnetic breakdown field Hp′ is calculated which, if applied at the surface of a super-conductor, produces a critical power dissipation leading to a steep rise in the power loss. Generally Hp′ < Hc, the critical field of the material. The functional dependence of the Q of a microwave cavity for values of Hp near Hp′ is also found.
TRANSITION FROM LAMINAR TO TURBULENT FLOW IN A LASER-INDUCED CONVECTION COLUMN
Authors: Chodzko Richard A. , Lin Shao-Chi
Published: February 2004

Transition from laminar to turbulent flow in a laser-induced vertical convection column has been observed using a CO2–N2 laser in CO2 gas. The onset of turbulence is measured with a fine-wire resistance thermometer and laser power meter. The transition boundary in terms of cell pressure p and incident laser power P0 at a fixed beam diameter and cell geometry is found to be approximately given by p2P0 = constant, which can be shown to imply a constant-transition Reynolds number for the induced flow under certain restrictive conditions.
ACOUSTOELECTRIC CURRENT SATURATION DUE TO OFF-AXIS SHEAR WAVES
Authors: Huber John C.
Published: February 2004

Current saturation in zinc oxide crystals having the electric field applied parallel to the c axis is shown to be due to acoustoelectric amplification of off-axis shear waves. The maximum angle of propagation and drift velocity are limited by the sample geometry.
NEW cw Cd-VAPOR LASER TRANSITIONS IN A HOLLOW-CATHODE STRUCTURE
Authors: Schuebel Wolfgang K.
Published: February 2004

cw laser action in Cd II of natural isotopic abundance has been observed at 5337, 5378, 6355, 6360, 7237, and 7284 Å. Laser oscillation has been achieved with a slotted hollow-cathode discharge containing He carrier gas at pressures of several Torr. Partial pressures of Cd of the order of 10−2 to 3 × 10−1 Torr were produced by external and/or discharge heating. All transitions are attributed to charge-transfer collisions between neutral Cd atoms and atomic He ions as the dominant mechanism of excitation.
FREQUENCY DEPENDENCE OF ULTRASONIC ATTENUATION IN ZINC OXIDE AT ROOM TEMPERATURE
Authors: Price D. H. R. , Wilkinson C. D. W.
Published: February 2004

The frequency dependence of the attenuation of acoustic waves in zinc oxide at microwave frequencies was measured using light-scattering techniques. For a longitudinal wave propagating along the c axis a f2 dependence was found and for a shear wave perpendicular to the c axis the frequency dependence was not f2; the most probable reason being the presence of scattering centers in the crystal.
LOW THRESHOLD ELECTRON BEAM PUMPED CdS LASERS WITH END-PUMPED CONFIGURATION
Authors: Nicoll F. H.
Published: February 2004

End-pumped lasing of thin CdS crystals is reported for electron energies down to 5 kV at 77°K and 9 kV at room temperature as a result of special treatment of the Fabry-Perot mirrors. These mirrors consisted of 500 Å of aluminum on the bombarded side and a multi-layer dichroic reflector on the opposite side. The very low voltage thresholds were obtained only where localized electron beam heating was used to produce bubbles in the aluminum; in other areas where the aluminum was flat, the threshold was greater than 25 kV. Improved reflectivity and possibly a confocal cavity contribution are believed to be responsible for this pronounced decrease of threshold.
TEMPERATURE COEFFICIENTS OF AVALANCHING P+NN+ JUNCTIONS WITH CARRIER TRAPPING
Authors: EerNisse E. P.
Published: February 2004

The steady-state characteristics of avalanching P+NN+ junctions have been calculated numerically as a function of temperature when carrier trapping on a multiple level trap is present in the space-charge region. Theory and experiment are compared for two devices of known doping profile. Negative temperature coefficients are predicted and measured at current densities higher than 50 A/cm2 and are proposed as the catastrophic failure mechanism for avalanche devices in a neutron irradiation environment. The agreement between experiment and theory substantiates assumptions about the insensitivity of the results to the value of capture rates used in the calculations.
ELECTRODELESS DISCHARGE MODES IN NEON-NITROGEN MIXTURES WITH APPLICATION TO THE PLASMA DISPLAY PANEL
Authors: Anderson John M.
Published: February 2004

Discharge buildup and decay was observed in the space between glass-covered electrodes when a sinusoidal voltage at 50 kHz was applied. Study of the emitted light in a mixture of neon + 10 % nitrogen revealed moving luminous regions, one cathode-directed which becomes a short-lived negative glow, and a second single- or multiply glowing region anode-directed which is similar to moving striations in a positive column. Three modes of discharge are observed, continuous and pulsed modes, as reported for the plasma display panel, and a third quasiglow mode, which gives high luminous output and also shows the memory desired for the plasma panel.
DEPTH DISTRIBUTION OF DIVACANCIES IN 400-keV O+ ION-IMPLANTED SILICON
Authors: Stein H. J. , Vook F. L. , Borders J. A.
Published: February 2004

The integral depth distribution for divacancies produced in silicon at room temperature by 400-keV O+ion implantation has been measured. The divacancy distribution was determined from repeated measurements of the characteristic 1. 8μ absorption band following successive anodizations and strippings of the implanted layer. Most of the divacancies are located between 4500 and 12 000 Å with a half-value at ∼ 7500 Å and a concentration of ∼ 4 × 1019 cm−3 near the center of the distribution. The measured integral depth distribution for the ion-produced divacancies is proportional within experimental error to theoretical calculations by Brice for the integral depth distribution of ion energy spent in atomic processes.
DIVACANCY MOTION ENERGY IN GOLD
Authors: Burton J. J. , Lazarus D.
Published: February 2004

A new resistance measuring technique has been used to study the annealing of quenched gold. The technique gives continuous data and makes it possible to obtain both an instantaneous and an apparent annealing activation energy. The instantaneous activation energy is 0.52 ± 0.03 eV. This is identified as the motion energy of the divacancy in gold.
ABSOLUTE FREQUENCY MEASUREMENTS OF THE 28- AND 78-μm cw WATER VAPOR LASER LINES
Authors: Evenson K. M. , Wells J. S. , Matarrese L. M. , Elwell L. B.
Published: February 2004

The two highest frequency measurements as yet reported are described. Frequencies of the 28- and 78-μm cw water vapor laser lines were found to be 10.718073±0.000002 THz and 3.821775±0.000003 THz, respectively, by beating each of these radiations with the 337- and 373-μm (0.89- and 0.80-THz) radiation from an HCN laser, in a metal-on-metal point-contact diode. The frequencies of the HCN laser were in turn measured by beating the 337-μm radiation with 74-GHz radiation and by measuring the 337- and 373-μm frequency difference.
MULTIPHOTON IONIZATION OF NEON: EXPERIMENTAL STUDY OF A RESONANCE
Authors: Baravian G. , Benattar R. , Bretagne J. , Godart J. L. , Sultan G.
Published: February 2004

By focusing a laser beam in neon, we experimentally study the validity of several multiphoton ionization theories by varying the energy of the emitted photons.
EXPLANATION OF CURRENT OSCILLATIONS IN CADMIUM SULPHIDE WITH OPTICALLY POLISHED PARALLEL END SURFACES
Authors: Das P.
Published: February 2004

A theory for the observation of current oscillations in CdS samples with parallel end surfaces due to motion of domains is presented. The theory agrees very well with the experiment.
EXPERIMENTAL STUDIES OF EVANESCENT WAVE COUPLING INTO A THIN-FILM WAVEGUIDE
Authors: Midwinter J. E. , Zernike F.
Published: February 2004

Experimental evidence is presented for a 2π phase change and a corresponding spot shift at resonance in an evanescent wave optical waveguide coupler.
ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
Authors: Gyulai J. , Meyer O. , Mayer J. W. , Rodriguez V.
Published: February 2004

Backscattering and channeling effect measurements with MeV 4He ions were used to determine the depth dependence of the composition of amorphous silicon nitride layers on single-crystal silicon. The composition was stoichiometric over the entire layer for high ratios of NH3 to SiH4 used in the deposition reaction at 850°C. For lower ratios, a silicon excess was found, and in extreme cases, the silicon excess was located predominantly near the interface.
THOMSON SCATTERING DIAGNOSTICS OF LASER-PRODUCED ALUMINUM PLASMAS
Authors: George T. V. , Engelhardt A. G. , DeMichelis C.
Published: February 2004

A 2-J, 20-nsec, Q-switched ruby laser has produced plasmas from isolated single aluminum spheres 80μm in radius. The plasma is probed by a second laser 60–200nsec later, and scattered light is detected at 90° by a multichannel system. Electron temperature and density measurements are reported.
VELOCITY MEASUREMENTS OF ELASTIC SURFACE WAVES IN THE LAYERED SYSTEM ZnS ON Al2O3
Authors: Daniel M. R. , de Klerk J.
Published: February 2004

Elastic surface waves have been generated and propagated in thin ZnS films on single crystals of Al2O3. Measurements of surface waves on these films have revealed a dispersive behavior in the velocity of propagation. At frequencies when the film thickness is greater than the wavelength, the surface wave velocity approaches 95% of the bulk shear velocity in ZnS. At lower frequencies, the velocity increases towards the bulk shear velocity in the Al2O3 substrate material.
SUPERCONDUCTING Nb TM010 MODE ELECTRON-BEAM WELDED CAVITIES
Authors: Turneaure J. P. , Viet Nguyen Tuong
Published: February 2004

Several superconducting TM010 mode Nb cavities at 8.6 GHz with high measured unloaded Q's and fields were made using commercial reactor-grade Nb, practical fabrication techniques, and practical processing techniques. The cavities were fabricated by machining the cavities in two parts from a solid billet of Nb and then joining the two parts with electron-beam welding. The cavities were processed primarily by using ultra-high-vacuum firing (1750–2100 °C) and chemical polishing. Unloaded Q's as high as 1011 were measured at low field levels, and surface fields as high as 1080 Oe and 70 MV/m were obtained with unloaded Q's on the order of 1010.
ANNEALING OF LIFETIME DAMAGE IN NEUTRON-IRRADIATED SILICON
Authors: Kawamoto H. , Oldham W. G.
Published: February 2004

A gated p-n junction diode has been used to study the effects of neutron damage on the various lifetime parameters in silicon. Isochronal annealing of heavily irradiated devices leads to the observation of two annealing stages: one in the 150–250°C range corresponding to the previously reported divacancy anneal, and the other in the 300–400°C range corresponding to the anneal of oxygen associated defects. The diffusion current, the space-charge generation current, and the space-charge recombination current show similar annealing behavior, suggesting that the damage complexes in the space-charge region are essentially of the same nature as those in the neutral bulk region.
HELIUM-CADMIUM LASER PARAMETERS
Authors: Hodges D. T.
Published: January 2004

Population densities and lifetimes have been obtained for the 5p 2P1/2,3/2, 5s2 2D3/2,5/2, and 6s 2S1/2 levels of Cd II in a typical helium-cadmium laser discharge. These results show that there is no population inversion for the lines at 3536, 2749, and 2573 Å, previously thought to be possible laser transitions. The maximum available laser power is also estimated from these results for the cw laser transitions at 4416 and 3250 Å.
ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2 INTERFACES
Authors: Fahrner W. , Goetzberger A.
Published: January 2004

Measurements of the energy dependence of surface-state density, capture cross section, and frequency dispersion were undertaken with the MOS conductance technique. Capture cross sections are constant in the depletion range and decrease exponentially towards the band edge. The frequency dispersion factor is independent of surface potential for wet oxide and becomes very small at the flatband point for dry oxides.
HALL-EFFECT MEASUREMENTS ON INDIUM-IMPLANTED SILICON
Authors: Bergamini P. , Fabri G. , Pandarese F.
Published: January 2004

Ion implantation of indium in silicon has been studied at 30 keV both in random and in channeling conditions. Implantations were performed at room temperature with doses ranging from 1×1012 to 1×1015 ions/cm2; surface carrier concentration versus anneal temperature curves were obtained and compared with the behavior of other group III elements. The anneal behavior of the above-mentioned implants after anneal at 700°C and subsequent tin implantation is also discussed.
PROPAGATION OF HIGH-VOLTAGE STREAMERS ALONG LASER-INDUCED IONIZATION TRAILS
Authors: Vaill J. R. , Tidman D. A. , Wilkerson T. D. , Koopman D. W.
Published: January 2004

The channeling and guidance of an electrical breakdown streamer via a laser-induced ionization trail is discussed, and preliminary experiments demonstrating this phenomenon are reported.
A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING THE ION-SCATTERING TECHNIQUE
Authors: Chou S. , Davidson L. A. , Gibbons J. F.
Published: January 2004

By bombarding samples with 1.1-MeV 4He+ ions and observing the energy spectra of the backscattered ions, it has been possible to determine the concentrations and lattice locations of arsenic and antimony impurities diffused into silicon. For the samples investigated it was found that only 60–75% of the arsenic atoms were in substitutional sites, even at impurity concentrations well below solid solubility. About 90% of the antimony atoms were found to be in substitutional sites.
LOW-TEMPERATURE EPITAXY OF β-SiC BY REACTIVE DEPOSITION
Authors: Learn Arthur J. , Haq K. E.
Published: January 2004

Formation of β-SiC on SiC by the reactive evaporation or reactive sputtering of Si in C2H2 was investigated. Use of values of relative C2H2:Si impingement rate > 30 avoided unreacted Si in the films. Epitaxial films were obtained on β-SiC and α-SiC at temperatures as low as 1100 and 1150°C, respectively. The occurrence of epitaxial temperatures several hundred degrees lower than for deposition by chemical vapor deposition is discussed in terms of deposition rate. Junction properties were observed for n-type β-SiC deposits on p-type SiC.
EFFECTIVE DEBYE TEMPERATURE OF PRECIPITATED CARBIDES
Authors: Mathalone Z. , Ron M. , Shechter H.
Published: January 2004

An effective Debye temperature Θ of carbides extracted from a tempered steel was determined through the Mössbauer effect. The f factor and Θ increase with tempering temperature, following a reduction of carbon content of the carbides and changes in the elastic properties. The phase transformation at Tc is followed by a discontinuity in the magnitude of the center shift and in ∂(δE/E)/∂T.
DISPERSIVE PROPERTIES OF THE FUNDAMENTAL RAYLEIGH WAVE MODE (M11) IN A HETEROEPITAXIAL ZINC OXIDE FILM ON A SAPPHIRE SUBSTRATE
Authors: Lim T. C. , Kraut E. A. , Tittmann B. R.
Published: January 2004

The dispersion characteristics of an anisotropic ZnO layer on an anisotropic sapphire substrate have been calculated for the fundamental Rayleigh mode. A typical example of the group delay as a function of frequency is illustrated. The time-bandwidth products for the linear regions of the group delay-frequency curves are tabulated. For the cases studied, it has been found that using the basal plane of ZnO on y-cut sapphire with propagation direction at right angles to the trigonal axis of sapphire yields the largest time-bandwidth product (902/in. for a layer thickness of 4μm).
SPONTANEOUS GIANT PULSING IN A RUBY LASER WITH ONE OUTPUT BEAM REFLECTED BACK INTO THE CAVITY
Authors: Carruthers J. A. , Coutts G. W.
Published: January 2004

Giant pulses have been observed in a ruby ring laser when one of the output beams is reflected directly back into the laser. The threshold for lasing action does not change when the beam is reflected back, but the output is increased to about 1 J with most of the energy in a few pulses of megawatt power level and 50–100 nsec duration.
VISIBLE LASER ACTION IN FLUORINE I
Authors: Kovacs M. A. , Ultee C. J.
Published: January 2004

Pulsed laser oscillation in atomic fluorine at 7039, 7129, and 7024 Å (vacuum) has been observed and identified as belonging to the 3p 2P – 2s2P transitions in fluorine I. Emission originates from an electrically pulsed CF4, C2F6, or SF6 and helium mixture with pressure of 0.1 and 5 Torr, respectively. Optical pulse duration is 1–2μsec with a peak power in all three lines of 150 W. Laser action takes place in a 4-m cavity with active discharge lengths from 1 to 3 m.
FREQUENCY STABILIZATION OF A GAS LASER USING THE MAGNETIC LAMB DIP
Authors: Le Floch A. , Frère P. , Brun P.
Published: January 2004

The study of the nonlinear effects occuring in the output intensity of a Zeeman laser which exhibits x-y type loss anisotropy provides a method for stabilizing the laser frequency with the magnetic Lamb dip. The modulation of the magnetic field produces the discriminant for a feedback loop. The stabilized frequency may be tuned in a controlled way.
SPONTANEOUS AND STIMULATED CARRIER LIFETIME AND THE SPECTRAL OUTPUT OF CdSe (77°K)
Authors: Keune D. L. , Holonyak N. , Dapkus P. D. , Burnham R. D.
Published: January 2004

Carrier lifetimes in thin (1–2μm) CdSe (77°K) photo-excited platelet lasers measured by a mode-locked laser excitation and phase-shift technique are found to vary from τ=1.5×10−8 sec for spontaneous recombination to τ=3.3×10−10 sec for high-level stimulated recombination. High-level photopumping (n>1018 cm−3) causes platelet laser oscillations to shift to longer wavelengths. This shift, which is observed to be as large as 20 meV, is attributed to many-particle interactions.
PICOSECOND PULSE MEASUREMENT EMPLOYING THE NONLINEAR PHOTOELECTRIC EFFECT
Authors: Burnham David C.
Published: January 2004

The nonlinear photoelectric effect is used to measured picosecond light pulses by means of a two-beam overlap technique. A biaklkali image orthicon exhibiting three-photon response is used to study the output of a diffraction-limited mode-locked Nd+++ glass laser. Very short time resolution (10−14 sec) is obtained in a single-shot technique.
ENERGY DEPENDENCE OF CASCADE CLUSTER FORMATION IN GOLD
Authors: Merkle K. L. , Singer L. R. , Wrobel J. R.
Published: January 2004

Not every xenon ion of E < 50 keV produces a defect cluster visible by transmission electron microscopy. The recently reported larger yields in heavy ion bombardment of gold are probably due to the additional damage produced by neutral particles. At E > 50 keV a one-to-one correspondence between number of incident ions and defect bunches is observed.
IMPROVED COUPLING TO INFRARED WHISKER DIODES BY USE OF ANTENNA THEORY
Authors: Matarrese L. M. , Evenson K. M.
Published: January 2004

It is shown that the dependence of the output of a whisker diode on its orientation in the polarized beam of an infrared laser can be explained on the basis of simple long-wire antenna theory. Outstanding improvements in coupling the diode to the radiation field can result when this fact is utilized in applications.
IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN p-TYPE SILICON
Authors: Fang P. H. , Tarko H. , Drevinsky P. J. , Iles P.
Published: January 2004

A study of p-type silicon shows that (1) the annealing temperature of electron-irradiation damage increases as the acceptor concentration increases and (2) the isochronal annealing behavior of damage in samples with gallium and aluminum impurities is different from that in boron-containing samples, which show a higher annealing temperature.
HIGH-RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n-GaAs
Authors: Eberhardt J. E. , Ryan R. D. , Tavendale A. J.
Published: January 2004

Surface barrier p-n junction diodes made from high-purity n-GaAs grown by liquid-phase epitaxy, have been operated as α-particle and low-energy γ-ray detectors over the range 77–373°K. Resolutions observed were 1.2 and 2.95 keV (FWHM) at 130 and 295°K, respectively, for 122-keV γ rays and 30 keV for 5.47-MeV α particles. The energy per electron hole pair for α particles is 4.51 eV and the Fano factor for γ rays is ≤0.24 at 130°K.
STIMULATED EMISSION IN In1 -xGaxP
Authors: Burnham R. D. , Holonyak N. , Keune D. L. , Scifres D. R. , Dapkus P. D.
Published: January 2004

By a modified Bridgman solution-growth technique employing a small temperature gradient. InP and GaP source crystal are used to saturate an In solution at ∼ 925°C and grow In1−xGaxP (x ∼ 0.3) at ∼ 925°C. This material is shown to exhibit stimulated emission.
CADMIUM TELLURIDE SURFACE BARRIER DETECTORS
Authors: Cornet A. , Siffert P. , Coche A. , Triboulet R.
Published: January 2004

The pulse height response for α particles incident upon Au n-type CdTe surface barrier counters has been investigated. The energy required to form an electron-hole pair in this material, by comparison with the specific energy loss per pair in silicon detectors, was found to be 4.46 eV at 300°K and 4.75 eV at 77°K.
LASER EMISSION NEAR 8 μ FROM A H2–C2H2–He MIXTURE
Authors: Shelton C. F. , Byrne F. T.
Published: January 2004

Laser emission on five lines near 8 μ has been obtained from a flowing mixture of H2–C2H2–He under pulsed electrical excitation. This emission has been tentatively identified as Q-branch lines of the 01000Σg+−000011Πu band (v2−v51) of C2H2. Pumping of the C2H2 appears to result from a near-resonant vibrational energy transfer from H2*(v=1) which has been excited in a He-rich discharge.
OBSERVATIONS OF IMPURITY INHOMOGENEITIES IN ARSENIC-DOPED SILICON BY SCANNING LASER MICROSCOPY
Authors: Jungbluth E. D.
Published: January 2004

Optical inhomogeneities in arsenic-doped silicon have been observed at a near-infrared wavelength of 3.39 μm with a scanned laser infrared microscope. The inhomogeneous distribution of impurities in the crystal includes segregation striae and a central faceted area. Results are compared with 1.1-μm infrared microscopy and x-ray diffraction topography. An interpretation of Tiller's mechanism for dislocation production is shown to be invalid for the case of arsenic-doped silicon.
ULTRASONIC STIMULATION OF OPTICAL SCATTERING IN NEMATIC LIQUID CRYSTALS
Authors: Kessler L. W. , Sawyer S. P.
Published: January 2004

We report that the application of an ultrasonic compressional wave to a thin layer of nematic liquid crystals results in optical scattering. This effect, which possesses both threshold and gray-scale properties, is potentially useful for real-time ultrasonic visualization for nondestructive testing and medical applications.
LASER ACTION IN ATOMIC FLUORINE BASED ON COLLISIONAL DISSOCIATION OF HF
Authors: Jeffers W. Q. , Wiswall C. E.
Published: January 2004

This letter reports laser action in the visible (near 7000 Å) and near infrared on transitions of atomic fluorine. The pumping process is dissociative collisions of helium metastable atoms with hydrogen fluoride. Lower levels of the laser transitions are depopulated by both uv radiative transitions and in collision with ground-state hydrogen atoms.
NANOSECOND RESPONSE TIME ROOM-TEMPERATURE INFRARED DETECTION WITH THIN-FILM BOLOMETERS
Authors: Contreras B. , Gaddy O. L.
Published: January 2004

Properties of thin-metal-film bolometer detectors deposited upon high thermal conductivity substrates are described. Measured response time is less than 15 nsec and NEP is found to be less than 10−6 W/Hz1/2.
VELOCITY MEASUREMENTS OF SMALL PARTICLES BY PHOTON COUNTING
Authors: Kelly Henry C.
Published: January 2004

Particles moving with known constant velocities are used to calibrate a photo-counting apparatus. Velocities from 1 to about 10−5 cm/sec are measured conveniently.
PRE-PRECIPITATION OF PHOSPHORUS IN HEAVILY DOPED SILICON
Authors: Biedermann E. , Bohg A.
Published: January 2004

Presently, silicon device technology phosphorous diffusions with high surface concentrations are commonly used for the formation of the emitter areas. Annealing treatments at or below 800°C have been shown to lead to the formation of extrinsic dislocation loops in such areas. A transmission electron microscopic investigation combined with resistivity measurements and profile determinations leads to the interpretation of these loops as a primary step of phosphorous precipitation in the supersaturated lattice.
CONTINUOUS SERIES OF METASTABLE HEXAGONAL CLOSE-PACKED SOLID SOLUTIONS IN THE ERBIUM-ZIRCONIUM SYSTEM
Authors: Wang R.
Published: January 2004

The complete mutual solid solubility of hexagonal close-packed forms of erbium and zirconium has been observed by x-ray diffraction for specimens rapidly quenched from the liquid state to room temperature. The lattice parameter measurements show negative deviations from the linearity as expressed by Vegard's law, with maximum deviations ΔV/V of ≲ 2% at approximately 41 at. % Zr and 2.3% at 70 at. % Zr. The axial ratio c/a remains as a linear relationship between those of two elements. The formation of the metastable solid solutions can be explained by classical rules.
SURFACE CHARGE TRANSPORT IN SILICON
Authors: Engeler W. E. , Tiemann J. J. , Baertsch R. D.
Published: January 2004

Surface charge was successfully transported by means of a series of overlapping conductor-insulator-semiconductor capacitor plates. The transport mechanism involves a field-driven diffusionlike phenomenon which is analyzed theoretically, and the results are compared to experiments performed on simple structures.
EFFECTS OF DOPING PROFILE ON THE MEASURED VELOCITY-ELECTRIC FIELD CHARACTERISTIC OF n-TYPE GaAs
Authors: Glover Gary H.
Published: January 2004

It is shown in this letter that the measured velocity-electric field (v-E) characteristic of n-type GaAs differes substantially from the intrinsic v-E characteristic if the doping density of the sample is nonuniform. A simple analysis of the effect is given which compares favorably with a more complete calculation and with experimental results. The heretofore unexplained large variation in measured v-E characteristics is readily predicted by the present theory if reasonable assumptions are made regarding sample inhomogeneity.
OBSERVATION OF SPONTANEOUS MODE LOCKING IN A HIGH-PRESSURE CO2 LASER
Authors: Lyon D. L. , George E. V. , Haus H. A.
Published: January 2004

Spontaneous mode locking has been observed in a high-pressure CO2 laser. The mode-locked pulses were found to be separated by 2L/c. Pulse separations as short as 11 nsec were achieved. The pulse shapes suggest that two axial cavity modes dominate the laser behavior.
REVERSE I-V CHARACTERISTICS OF THE Na–Si SCHOTTKY BARRIER
Authors: Szydlo N. , Poirier R. , Kleefstra M.
Published: January 2004

The Schottky barrier height at the interface between metallic sodium and vacuum-cleaved n-type Si has been found to be 0.43±0.02 eV. Ther barrier height was determined from measurements of the reverse current-voltage characteristic of Schottky diodes in a vacuum of 10−8 Torr and at 288°K. The measured value is close to the results of other workers on the alkaline-earth metals and shows that the barrier height is strongly controlled by the surface-state density at the metal-semiconductor interface.
ELECTRON BEAM INDUCED STRESS WAVES IN SOLIDS
Authors: Perry F. C.
Published: January 2004

Large-amplitude stress waves have been generated in solids by means of a very high current pulsed electron beam. The electron beam has an average energy of 3 MeV, current of 40 000 A, and pulse duration of approximately 70 nsec. The back surface velocity profiles were measured using a laser-Doppler interferometer. Data obtained for 6061-T6 aluminum indicated a slow rise of the plastic wave, thus suggesting the importance of strain rate effects. The utility of the technique for materials research at high pressures and temperatures is discussed.
CONTINUOUS STIMULATED SPIN-FLIP RAMAN SCATTERING IN InSb
Authors: Mooradian A. , Brueck S. R. J. , Blum F. A.
Published: January 2004

The first cw operation of a Raman laser is reported. Using a 5-μm CO laser we have observed two stimulated Stokes lines by scattering from spin-flip excitations of conduction electrons in InSb in a magnetic field. Observed threshold powers were about 200 mW for the first Stokes line.
ON THE COUPLING OF AN HIGH-CURRENT RELATIVISTIC ELECTRON BEAM TO A SLOW WAVE STRUCTURE
Authors: Nation John A.
Published: January 2004

Annular relativistic electron beams carrying currents of 30–40 kA at energies of 200–500 keV have been propagated through a cylindrically symmetric, annular, ridged waveguide. An interaction between the electron beam and a backward wave in the guide has been observed. This leads to oscillations in the range 7.8–9.7 GHz at power levels of about 10 MW in a 30-nsec pulse.
A NEW MODEL FOR THE TEMPERATURE-DEPENDENT CdS LASER
Authors: Leheny R. F. , Shaklee K. L. , Ippen E. P. , Nahory R. E. , Shay J. L.
Published: January 2004

The temperature dependence of laser wavelength and threshold pump power of a CdS platelet laser operating from 2 to 240°K are presented. A model is proposed that demonstrates how the temperature dependence of band edge absorption determines the variation of laser wavelength and threshold pump power over this temperature range.
STABLE, EFFICIENT, OPTICAL PARAMETRIC OSCILLATORS PUMPED WITH DOUBLED Nd: YAG
Authors: Wallace R. W.
Published: January 2004

Singly resonant LiNbO3 oscillators with pump depletion as high as 67% and average visible powers as high as 105 mW are reported. These oscillators are pumped with the doubled frequencies of a repetitively pulsed Nd: YAG laser to produce tunable radiation from 0.55 to 3.65 μm. A bleaching of optically induced index inhomogeneities has been observed when operating at relatively high average powers.
CHARGING OF POLYMER FOILS WITH MONOENERGETIC LOW-ENERGY ELECTRON BEAMS
Authors: Sessler G. M. , West J. E.
Published: January 2004

Results of charge deposition on 12.7 and 25.4-μm polymer foils with 10- to 40-keV monoenergetic electron beams are reported. The trapped charges have densities of about 10−7 C/cm2, with a uniformity of ± 5% over the bombarded area. The time constants of the charge decay are typically of the order of tens of years. Thermally stimulated currents show a more densely populated high-temperature portion than for foils charged with other methods.