bluuebunny/crossref_metadata_2025 huggingface dataset:
Inline Defect Solution to Mitigate EOL Device Failure
Authors: Guo Yong , MacDonald Brian , Guo Yanan , McEwen Nathan , Kim Juheon , Penley Christopher
Published: November 2023

The challenges keep rising for fault isolation and failure analysis (FIFA) for the advanced semiconductor devices fabricated via integrated processes. Perceiving that defects randomly occurred during IC manufacturing contribute primarily to the device failures in comparison to those caused by harsh service environmental, we focus our efforts on fixing the defect issues in the processes, expecting a significant portion of the device failures may be prevented. A case study here demonstrates the procedure for fixing an inline defect issue via improving tool maintenance for the chemical-mechanical polishing (CMP) process. Through a correlative physical and chemical analysis down to atomic scale, a 10 nm diamond particle and a 10 nm metallic debris damaging one of the metal interconnect layers were defined. The analysis led to pinpointing the issue to a metal CMP process. By examining the process operation and the tool configuration, we located the diamond-missing sites on a pad-conditioning disk made with embedded diamond grits in a metal matrix. Preventive countermeasure were implemented to avoid the same defect recurring via resetting the disk life and maintenance.
Implementation of RFID-based Equipment Management System for Failure Analysis Laboratory Equipment
Authors: Castillo Acer Jay , Acedillo Mark Anthony
Published: November 2023

Completion of failure analysis (FA) cases require a lot of expensive equipment and tools. Equipment Management System (EMS) is a must to safeguard the equipment from being down/damaged due to uncertified/untrained and high number of users and to avoid high repair cost of the FA laboratory equipment. The purpose of this paper is to present the RFID-based equipment management system for failure analysis laboratory equipment which has the capability to limit the equipment usage to authorized and certified users, locks and unlocks the equipment, and controls the real-time status of the equipment.
Photon Emission Intensity Analysis for Leakage Source Identification
Authors: Song Zhigang , Stellari Franco , Tran Phong
Published: November 2023

Photon Emission Microscopy (PEM) is a popular technique for microelectronics failure analysis by detecting the photon emission from a defective circuit, when a failing device is electrically exercised at certain voltage. The photon emission contains physical location information, photon emission spectral information and photon emission intensity information. People often use the physical location information to localize a defective circuit and guide the follow-up physical failure analysis to find the defects. However, this procedure does not always work. Sometimes, it shows no defect found (NDF). In this paper, we propose a new computer vision-based analysis of the photon emission intensity for identifying the root cause of the excessively high IDDQ at elevated Vdds. The procedure includes collecting photon emissions at different Vdds and a follow-up photon emission intensity analysis with computer vision techniques. The procedure was applied on a case of microprocessor chip. After analyzing the dependencies of photon emission intensity on Vdd for 4 types of circuits, it was concluded that the SRAM circuit leakage is the root cause of the excessively high IDDQ at elevated Vdd.
Fault Simulation for Dynamic Failures in Analog and Mixed Signal Circuits
Authors: Melis Tommaso
Published: November 2023

The localization of defects that cause dynamic electrical behavior is a constant challenge for failure analysts. Such types of failures are often present in analog circuits, and standard fault isolation techniques are constrained and not always successful. In this paper, we demonstrate a method to exploit industrial fault simulators in conjunction with standard analysis methods to solve analyses in analog circuits. In addition, we will show methods to adapt fault simulation to these dynamic electrical failure modes. Successful fault isolation results from real-world failure analyses of oscillators, which are typical inside analog and mixed-signal circuits.
A Failure Caused by Extended Cross-Defect in DRAM
Authors: Lee Jaehoon , Kim Jinseon , Han Dongguk , Lee Seunghun , Kim Sunwoo , Seol Jingyeong , Lee Seungjin , Cho Kyoungrak , Nam Incheol , Kim Daesun , Lee Beomseop , Hong Heeil , Hwang Sangjun
Published: November 2023

As memory devices decrease in dimensions, particles are found to be a major source of defects in unexpected DRAM failures due to their relatively large size. Among many DRAM defects, cross-defects account for the majority of system failures for a long time. Hard cross-defects are frequently observed in the first test step. Most of these defective cells are repaired with row or column redundancy resources. However, after high voltage and temperature stress, some of the cross-defects can additionally spread to adjacent rows or columns with reduced resistance. Recently, a new type of bridge cross-defect accompanied by row failures has emerged. This can be detected electrically through current measurements of 2 wordline (WL) under active mode. But, these defects are not obvious even after both high temperature and voltage stress. The bridge causes intermittent failure in the row-direction during DRAM operation. This soft 2-WL bridge is considered a serious fault source that can cause uncorrectable error (UE) at the system level even though on-die error correction code (ODECC) is introduced. Therefore, it is very important to find, improve, and develop control methods on such defects for future DRAM enhancement. In this paper, 2-WL defects or extended cross-defect were intensively analyzed through electrical failure analysis (eFA) and physical FA (pFA). Results reveal fine particles as the cause.
Application of Beam Deceleration to Improve SEM Image Quality for Physical Failure Analysis
Authors: Scott Robert , Schnutenhaus Tim , Torres Andres , McEwen Nathan , Chin Cheong Kah , Penley Christopher
Published: November 2023

As technology nodes continue to shrink, Scanning Electron Microscopy (SEM) inspection and electrical characterization of transistors has increased in difficultly. This is particularly true with early back end-of-line (BEOL) features like metal and via layers which are traditionally imaged at 3-5 keV. At these layers, this energy is capable of beam contamination, introducing electrical complications particularly with transistor probing. This electrical data is necessary to characterize subtle defects at front end-of-line (FEOL). Thus, the implementation of beam deceleration for the inspection of these layers provides a useful combination of low landing energy and higher image quality. This technique proves to aid in preserving the ability to electrically characterize any defect at the subsequent layers beneath. This increases the quality of the Physical Failure Analysis (pFA) workflow when implemented at early BEOL layers by providing higher quality images as well as preserving the electrical properties of the transistors for subtle FEOL defect characterization.
ICCDLAB : Silicon Chip Tooling for Failure Analysis Laboratories
Authors: Lysee Nicolas , Parrassin Thierry , Le Gloanec Céline , Borot Bertrand , Dudit Sylvain
Published: November 2023

The ICCDLAB (Integrated Circuit for Characterization and Debug Laboratory) test chip is a full custom silicon chip dedicated to failure analysis. This chip embeds several custom devices designed to highlight, reproduce, and simulate defects, as well as enhance the signatures obtained through failure analysis techniques that are used to locate defects in circuits. The ICCDLAB serves as a versatile tool for failure analysts, providing a “Swiss army knife” and a failure analysts’ playground at the same time. The chip offers a simple means of covering an exhaustive catalog of failure analysis techniques and approaches, allowing for equipment benchmarking, training of individuals new to the failure analysis field, understanding of failure mechanisms and signatures, simulation of defect behaviors, and support for development of new techniques.
Open Localization with LIT
Authors: van Veenhuizen Marc , Wan Jinbo , Yang Shuhan , Peters-Wu Lei
Published: November 2023

This paper discusses a method to observe open traces with the LIT. An overview is given of FA techniques capable of localizing high Ohmic fails. It is discussed how a wire can be made observable with LIT by injecting an AM modulated RF carrier signal. The electrical stimulus is described that excites the device and triggers the LIT. Results that demonstrate the capability of the technique are presented for several devices and the findings are evaluated.
Inverter Characterization in Advanced Process by Nanoprobing
Authors: Tsai J.S. , Yen C.H. , Tzou D.Y. , Ho K.T.
Published: November 2023

As the semiconductor process node enters into advanced process era, it is more challenging to extract electrical behavior of devices and circuits by nanoprobing systems. Not only probing is getting difficult at smaller contact or via, but also the deprocess tricks would have large influence on probing conditions, which could cause incorrect electrical performance and hard to explain the reasons. This research develops the technique of sample preparation to extract correct transfer curve of inverter cell in FinFET process.
Autoencoder-Based Defect Detection is Applied to CAFM Images of Periodical Structures
Authors: Solovey Alexey , Zhang Chuan
Published: November 2023

An autoencoder-based approach is applied to CAFM images of the chip memory. Latent features visualizing highlights the regions, that could be of the interest to estimate the typical failures: missing contact, additional contact, not sufficient contact. Preliminary results are provided.
High-Precision Pulse Reflectometry-Based Fault Localization Approach for Advanced Chip Package Failures
Authors: Zhang Chuan , Aguada John
Published: November 2023

For decades, device scaling has been the primary driver of the performance boost in integrated circuit (IC) devices. However, this trend has slowed down in recent years due to physical limitations and technical challenges. To continue meeting the ever-increasing demand for high-performance computing, other innovations such as advanced transistor designs and packaging schemes have emerged. Advanced transistors, such as FinFETs and Gate-all-around FET (GAAFETs), have been developed to overcome the limitations of traditional planar transistors, offering higher performance and energy efficiency. Meanwhile, advanced packaging schemes, such as system-in-package (SiP), 2.5D, and 3D packaging, offer higher integration densities, improved thermal management, and faster data transmission. These innovations are crucial in driving the development of high-performance computing, and they will play an essential role in meeting the growing demand for faster and more efficient computing.
Voltage Free Failure Analysis of Sub-15nm DRAM Gate Insulator Breakdown based on Thermal Laser Stimulation
Authors: Kim Chae Soo , Jeon Bohyeon , Byeon Chiheon , Yew Seungchul , In Lee Dong , Park SeGuen , Ban Hyodong
Published: November 2023

We propose an unbiased electrical fault isolation methodology for locating gate oxide breakdown failures in MOSFETs. The test vehicle involves a sub-15nm technology DRAM device which failed due to time-dependent dielectric breakdown (TDDB). This methodology introduces an implementation of Optical Beam Induced Resistance Change with no applied external bias (zero input voltage). From OBIRCH analysis, a change in current was achieved near failure site. This principle was explained based on Seebeck effect and equivalent circuit modeling of the MOSFET drain within Seebeck generator. A physical cross section using the Focused Ion Beam (FIB) revealed a gate oxide breakdown along the location of the OBIRCH spot, illustrating the benefit of an unbiased fault isolation to preserve the failure mechanism. This study proves that gate oxide breakdown site can still be located even with no external voltage applied, preserving the device condition of nanoscale DRAM, and eliminating the chances of altering the failure mechanism as a result of the applied external voltage stress.
Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB
Authors: Bonifacio C.S. , Ray M.L. , Fischione P.E. , Yu Y. , Skowronski M.
Published: November 2023

Advanced memory technologies are in demand with phase change memory (PCM) devices as a forefront candidate. For successful characterization by transmission electron microscopy (TEM) for failure analysis and device development, an accurate and controllable thinning of TEM specimens is critical. In this work, TEM specimens from a GeTe-based PCM device at a partial SET state were prepared using a Xe plasma focused ion beam (pFIB) and polished to electron transparency using Ar ion beam milling. We will highlight the differences between Ga focused ion beam (FIB) and Xe pFIB TEM specimen preparation, the benefits of post-pFIB Ar ion beam milling, and show TEM results of the effects of partial SET programming of the GeTe PCM device.
Techniques for Preparation of Damage-Free Ultrathin Cross-Section TEM Samples from Planar TEM Samples
Authors: Levenson Jacob , Subramanian Swaminathan , Ly Khiem , Chrastecky Tony
Published: November 2023

As integrated circuit (IC) feature dimensions have shrunk, the need for precise and repeatable sample preparation techniques has increased. In this work, the process of preparation of ultrathin planar-to-cross-section conversion transmission electron microscopy (TEM) samples using a gallium dual-column focused ion beam (FIB)/scanning electron microscope (SEM) system is examined. Sample preparation technique in this paper is aimed at repeatably isolating features in the 5-30 nm range, while limiting common issues such as amorphization, lamella warpage, and the curtain effect (or “curtaining”). This can be achieved through careful selection of FIB parameters including ion beam energy, ion beam current, stage tilt, and deposited protective layer materials and thicknesses, which are all discussed in this work.
Electrons Vs. Photons: Assessment of Circuit’s Activity Requirements for E-Beam and Optical Probing Attacks
Authors: Amini Elham , Kiyan Tuba , Renkes Lars , Krachenfels Thilo , Boit Christian , Seifert Jean-Pierre , Jatzkowski Jörg , Altmann Frank , Brand Sebastian , Tajik Shahin
Published: November 2023

Contactless probing methods through the chip backside have been demonstrated to be powerful attack techniques in the field of electronic security. However, these attacks typically require the adversary to run the circuit under specific conditions, such as enforcing the switching of gates or registers with certain frequencies or repeating measurements over multiple executions to achieve an acceptable signal-to-noise ratio (SNR). Fulfilling such requirements may not always be feasible due to challenges such as low-frequency switching or inaccessibility of the control signals. In this work, we assess these requirements for contactless electron- and photon-based probing attacks by performing extensive experiments. Our findings demonstrate that E-beam probing, in particular, has the potential to outperform optical methods in scenarios involving static or low-frequency circuit activities.
Lock-in Thermography for the Localization of Security Hard Blocks on SoC Devices
Authors: Kögel Michael , Brand Sebastian , Große Christian , Altmann Frank , Selmke Bodo , Zinnecker Kilian , Hesselbarth Robert , Kabakci Nisha Jacob
Published: November 2023

Localizing security-relevant hard blocks on modern System-on-Chips (SoCs) for physical attacks, such as sidechannel analysis and fault attacks, has become increasingly time-consuming due to ever-increasing chip-area and - complexity. While this development increases the effort and reverse engineering cost, it is not sufficient to withstand resolute attackers. This paper explores the application of camera-based lock-in thermography (LIT), a nondestructive testing method, for identifying and localizing security hard blocks on integrated circuits. We use a synchronous signal to periodically activate security-related functions in the firmware, which causes periodic temperature changes in the activated die areas that we detect and localize via an infra-red camera. Using this method, we demonstrate the precise detection and localization of security-related hard blocks at the die level on a modern SoC.
Mapping Conductivity and Electric Field in an AlGaAs HEMT with STEM EBIC
Authors: Hubbard William A
Published: November 2023

The operation of modern semiconductor components often relies on nanoscale electronic features emerging from complicated device architectures with finely tuned composition. While the physical structure of these devices may be straightforward to image, the resulting electronic characteristics are invisible to most high-resolution imaging techniques. Here we present electron beam-induced (EBIC) imaging in the scanning transmission electron microscope (STEM) as a high-resolution imaging technique with electronic-based contrast for characterizing complex semiconductor devices. Here, as an example case, we discuss the preparation and imaging of a STEM EBIC-compatible cross section extracted from a commercial AlGaAs high electron-mobility transistor (HEMT). The device exhibits low surface leakage, as measured via electrical testing and STEM EBIC conductivity contrast. The EBIC signal in the active layer of the device is mostly confined to the InGaAs channel, indicating that the electronic structure is largely preserved following sample preparation.
Nanoprobing for Logical Cell Operational Tests
Authors: Long Branden , Su Yang , Wang Yunfei , Morgan Christopher , Kabir Md Faisal , Padmanaban Ramya , Hearne Weston , Daniel Tad
Published: November 2023

We have identified a method for nanoprobing CMOS circuits at MHz frequencies using the same hardware already used for single transistor pulsing applications. In this paper we show example responses and failure isolation examples for both sequential and combinational logic cells and discuss the test setup and sample prep that were used to successfully collect the responses.
Advances in EFA with Color Coded Multi-Channel Nanoprobing
Authors: Moldovan Grigore , Courbat William , Jatzkowski Jörg
Published: November 2023

Key improvements to data acquisition, visualization and analysis are presented for Electrical Failure Analysis (EFA). Multi-channel image acquisition is introduced, where every nanoprobe is used for simultaneous imaging, in combination with color coding either by probe or by current. This new approach improves visualization of new device technologies with increasing three-dimensional complexity, in particular for overlapping structures and fields. Further, this new multichannel method opens opportunities for image mixing to improve data quality and signal interpretation.
Finite Element Analysis (FEA) and Fractography : Complementary Methods in Understanding the Factors Resulting to Hairline Die Crack on Chip-On-Lead (COL) Devices
Authors: Cajita Melanie , Dechino Renald , Javien Marionne , Villafranca Nico Deus
Published: November 2023

Several failures in Chip-On-Lead (COL) package from the customer were returned for Failure Analysis (FA). Containment activities were able to find similar failures. The connectivity of the silicon die to the leads uses gold wire. The die is in live bug position with respect to the package and is being held in place using non-conductive die attach epoxy. The identification of the Failure Mechanism (FMECH) utilized analysis flow involving non-destructive and destructive FA techniques. A hairline crack was found on the die between the two (2) corner pins. Based on lot history reviews, hairline die crack had a very low detectability at electrical test. Further collaboration with the process owners showed the need to identify the crack initiation, propagation and the factors that could result to this FMECH. Analysis of fracture or fractography was utilized in identifying the crack initiation point and propagation. Due to low detectability, identifying the factors resulting to die crack would require several evaluations and process mappings. Finite element analysis (FEA) was utilized to create models and simulation to identify factors that would result to highly stressed area identified through fractography. These additional data for the hairline crack were vital on the identification of root cause and formulation of corrective/preventive actions.
GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy
Authors: Fouchier Marc , Monachon Christian , Davies Matthew
Published: November 2023

This work reviews the capabilities of cathodoluminescence spectroscopy to monitor several key performance indicators in GaN-based High Electron Mobility Transistors (HEMTs) manufacturing. In particular, high throughput threading dislocation (TD) density measurements in the 108-109 cm-2 range are presented, together with dislocation type discrimination capabilities. Beyond these applications, other relevant topics such as buried AlGaN layers composition and Mg dopant concentration for normally off devices are introduced.
SiC MOSFET Micro-Explosion Due to a Single Event Burnout: Analysis at the Device and Die Levels
Authors: Coq Germanicus Rosine , Phulpin Tanguy , Rogaume Thomas , Niskanen Kimmo , Froissart Sandrine , Latry Olivier , Michez Alain , Lüders Ulrike
Published: November 2023

For device qualification in harsh environments (space, avionic and nuclear), radiation testing identifies the sensitivity of the devices and technologies and allows to predict their degradation in these environments. In this paper, the analysis of the electrical characteristics and of the failure of a commercial SiC MOSFET after a Single Event Burnout (SEB) induced by proton irradiation are presented. The goal is to highlight the SEB degradation mechanism at the device and die levels. For failed devices, the current as a function of the drain-source bias (VDS) in off-state (VGS=0V) confirms the gate rupture. For the die analysis, Scanning Electron Microscopy (SEM) investigations with energy-dispersive X-ray spectroscopy (EDX) analysis reveals the trace of the micro-explosion related to the catastrophic SEB inside the SiC die. With a fire examination, similar to a blast, the SEM analysis discloses damages due to the large local increase of the temperature during the SEB thermal runaway, leading to the thermal decomposition of a part of the SiC MOSFET and the combustion with gaseous emissions in the device structure.
Cell-Aware Test Integration Towards Achieving 0 DPPB on Automotive Designs
Authors: Ramesh Saidapet , Krishnamurthy Nikila , Jha Siddharth , Loh Jun Keat , Clark Gary S. , Ling CP
Published: November 2023

Traditional fault based scan ATPG stuck-at, transition-delay and small-delay defect and custom multi-transition fault model based patterns have been used as the primary DFT scan test content for many years to guarantee zero defects on automotive designs. Continued analysis to reduce DPPB on multiple automotive designs confirmed presence of subtle cell-internal defects that were not getting screened out using the traditional set of fault model based patterns and, motivated us to evaluate and integrate defect-oriented cell-aware tests on automotive designs. In this paper, we will first discuss the cell-aware pattern generation flow followed by the enhanced test program flow that was used to screen and identify unique cell-aware only failures from a new product introduction design. Later, we will review the deep-dive findings from the first unique cell-aware failure on a new design. ATE silicon characterization, failure analysis findings and ATPG simulation along with CMOS transistor level explanation of how cell-aware transition-delay patterns were more effective in screening out the defective unit when compared to traditional transitional-delay patterns will be discussed in detail.
Innovation in Copper Bond Wire Package Immersion Decapsulation Technique for Stressed Soic Products
Authors: Beboso Eugene , Yabut Brian , Balabbo Rona , Masiris Mac
Published: November 2023

This study presents a revolutionary methodology in an otherwise tedious and inconsistent manual decapsulation process of copper-wired small outline integrated circuit (SOIC) plastic package. The author explains how the consistency was achieved by adopting important changes such as (1) application of the 1-volt electrochemical bias, (2) optimization of etching solution agitation at 3.5 RPM, and (3) adoption of a symmetrical stainless-steel cathode. With the power of consistency, the added benefit of the adoption changes is the correct measurement of wire bond integrity tests such as wire pull, wire diameter, and magnitude of etch. The paper also discusses additional improvements to address the issue of long cycle time via laser ablation.
Flip-Chip and Backside Techniques (2023 Update)
Authors: Cole Edward I. , Fishgrab Kira L. , Barton Daniel L. , Bernhard-Höfer Karoline
Published: November 2023

Presentation slides for the ISTFA 2023 Tutorial session “Flip-Chip and Backside Techniques (2023 Update).”
Sample Preparation for Electron Microscopy Characterization (SEM and TEM) and Failure Analysis of Advanced Semiconductor Devices
Authors: Nowakowski Pawel , Bonifacio Cecile S.
Published: November 2023

Presentation slides for the ISTFA 2023 Tutorial session “Sample Preparation for Electron Microscopy Characterization (SEM and TEM) and Failure Analysis of Advanced Semiconductor Devices.”
In-situ Correlative AFM-SEM Characterization for Failure Analysis
Authors: Neuman Jan , Dao Radek , Novotný Ondřej , Schánilec Vojtěch , Hegrová Veronika , Strakoš Libor , Vystavěl Tomáš , Celano Umberto
Published: November 2023

Presentation slides for the ISTFA 2023 Tutorial session “In-situ Correlative AFM-SEM Characterization for Failure Analysis.”
Fundamental Considerations in the Justification, Design, and Construction of an Analytical Laboratory for High Tech Imaging and Processing Tools
Authors: Herschbein Steven B. , Hartfield Cheryl , Wong Michael
Published: November 2023

Presentation slides for the ISTFA 2023 Tutorial session “Fundamental Considerations in the Justification, Design, and Construction of an Analytical Laboratory for High Tech Imaging and Processing Tools.”
Non-Destructive Defect Localization by Scanning Acoustic Microscopy
Authors: Brand Sebastian , Kögel Michael
Published: November 2023

Presentation slides for the ISTFA 2023 Tutorial session “Non-Destructive Defect Localization by Scanning Acoustic Microscopy.”
Assessment of the validity and practical feasibility of target indicators for the development of the livestock industry in the region within the framework of the State Program
Authors:   Federal State Budget Scientific Institution «Federal Rostov Agricultural Research Centre», Rassvet, Rostov region, Russia, Kuznetsov Vladimir V. , Kholodova Marina A. ,   Federal State Budget Scientific Institution «Federal Rostov Agricultural Research Centre», Rassvet, Rostov region, Russia
Published: November 2023

With the beginning of socio-economic transformations of the agrarian sphere in 2006-2021, the domestic livestock industry is developing within the framework of the formation of a modern strategic planning system. Priority goals, benchmarks, indicators of the development of the meat and dairy farming industry for the long-term perspective and the state’s obligations to support agricultural producers are reflected in the State Program. The implementation of strategic tasks is carried out at the regional level. The direct executors are agricultural producers. Stimulation of agribusiness entities in terms of the development of priority subsectors of animal husbandry in small forms of management, technical modernization of their technological processes, co-operational interactions is provided by providing state support funds. The article assesses the validity of the target indicators of the development of the livestock industry within the framework of the regional state Program of Rostov region and their practical feasibility. It is proved that the absence of an active predictive function in the strategic planning system at the regional level casts doubt on the objectivity of the formation and fulfillment of the target indicators of the regional state Program. The author’s substantiated forecasts of the development of meat and dairy farming at the level of a specific region for the long term and the assessment of the current level of state support of the industry cause the need to revise the basic approaches to the allocation of budgetary funds in order to achieve strategic priorities.
Diagnostics of spatial localization of rural territories of the Belgorod region
Authors:   Research Institute of Economics and Organization of Agro-Industrial Complex of the Central Chernozem Region is a branch of FGBSI «Voronezh Federal Agrarian Scientific Center named after V.V. Dokuchaev», Voronezh, Russia, Zakshevskii Vasilii G. , Merenkova Irina N. ,   Research Institute of Economics and Organization of Agro-Industrial Complex of the Central Chernozem Region is a branch of FGBSI «Voronezh Federal Agrarian Scientific Center named after V.V. Dokuchaev», Voronezh, Russia, Gavrilova Zoya V. ,   Research Institute of Economics and Organization of Agro-Industrial Complex of the Central Chernozem Region is a branch of FGBSI «Voronezh Federal Agrarian Scientific Center named after V.V. Dokuchaev», Voronezh, Russia
Published: November 2023

The article deals with the issues of determining the level of spatial localization and inter-municipal polarization of rural areas of the Belgorod region. According to the main subsystems of spatial potential (labor, financial, infrastructural and social), the authors built ratings of municipal districts, reflecting their leadership or lag behind in various components. Using the relative magnitude of polarization, intermunicipal polarization was calculated by subsystems of spatial potential in the districts of the Belgorod region, and the total spatial potential for each district was calculated. The intermunicipal polarization, the total spatial potential and the degree of spatial localization of the districts of the Belgorod region are clearly presented in the form of cartograms. The interpretation of the results of the grouping is given and proposals are made for groups of municipalities with different levels of spatial potential.
Organizational and economic aspects of the use of Indian-made tractors in business subjects of Russia
Authors:   Ural State Agrarian University, Yekaterinburg, Russia, Iovlev Grigory A. , Goldina Irina I. ,   Ural State Agrarian University, Yekaterinburg, Russia
Published: November 2023

The study presents the main manufacturers of agricultural machinery and tractors in India, their share in total production, dynamics in recent years. The production of tractors in India over the past 70 years has been analyzed. It is mainly focused on the production of tractors with an engine power of up to 50 hp. Indian-made tractors that have appeared on the Russian market have a rather high energy saturation, which will allow using ballast weights to obtain satisfactory traction properties and high performance properties. When determining the economic efficiency of using tractors, it was revealed that the Indian-made Solis 90 tractor is practically not inferior to Chinese-made tractors, and surpasses them in a number of parameters.
Regional factors of grain production growth in Russia
Authors:   The Institute of Agrarian Problems is a separate structural subdivision of the Federal State Budgetary Institution of Science of the Federal Research Center «Saratov Scientific Center of the Russian Academy of Sciences», Saratov, Russia, Bondarenko Yuri P.
Published: November 2023

The record gross grain harvest in 2022 made it possible to strengthen Russia’s food security and increase its export potential. This increases the relevance of the study of regional factors of grain production growth to maintain this trend. A study of 27 regions with the most developed grain subcomplex, which produce almost 90% of grain in the country, showed a low dependence of grain production growth rates on the value of indicators of material and financial security of agriculture. It is concluded that a ranked increase in the growth rate of grain production in almost half of the regions occurred with a decrease in the staffing of enterprises with basic types of agricultural machinery, a decrease in the volume of mineral and organic fertilizers, a reduction in the volume of investment and subsidization of agriculture and an increase in the degree of general and complete depreciation of fixed assets of agriculture. Over the past eight years, the indicators of material and financial security of agriculture in all surveyed regions have sharply decreased, which significantly reduces the possibility of further growth in grain production. The selected regions were grouped according to the existing level of agricultural production potential. It was revealed that only ten regions have a relatively balanced material and financial potential, which makes it possible to continue increasing grain production in the near future with a high probability while maintaining the existing volumes of state support. In the remaining seventeen regions, further increase in grain production will be impossible without a significant increase in support and financing of the grain subcomplex.
Features of the reproduction of skilled personnel in the agro-food sector of the economy and the mechanisms of their adaptation in rural territories
Authors:   Institute of Economics, Ural Branch of the Russian Academy of Sciences, Yekaterinburg, Russia, Semin Alexander N.
Published: November 2023

The article presents the results of the analysis of the influence of various socio-economic factors on the processes of reproduction of qualified personnel and the adaptation of young specialists in rural areas of the Middle Urals. It has been established that young specialists consider insufficient practical (practice-oriented) training in an agricultural educational institution to be the most important factor preventing full adaptation (unlike in previous years). They are also very concerned (according to the survey data) about the lack of mentorship in most of the economic entities of the agro-industrial complex. Faster than other young professionals, veterinarians and zooengineers adapt to the new production environment (average adaptation time is 1.5 years). It is recommended to carry out career guidance work on the stages of the reproductive process (preparation in kindergarten - at school - at college - at the university - arrival at the place of work and adaptation to production processes - advanced training - retraining if necessary).
PENERAPAN PENDEKATAN MATEMATIKA REALISTIK INDONESIA(PMRI) TERHADAP HASIL BELAJAR MATEMATIKA SISWA KELAS VII SMP NEGERI 3 LUBUKLINGGAU
Authors: Nabillah Hurin , Refianti Rani , Luthfiana Maria
Published: November 2023

This study aims to determine the mathematics learning outcomes of students class VII SMP Negen 3 Lubuklinggau after using the application of the Indonesian Realistic Mathematics Education (PMRI) approach. The approach used in this research is a quantitative approach with a quasi-experimental research type. Negen 3 Lubuklinggau for the 2022/2023 academic year. The samples taken were class VII 4 with a total of 30 students. The data collection technique in the uu yahu research was a test technique, namely by giving students four questions. The results of this study showed that student learning outcomes experienced completeness of 86% with an average MLA of 71.92. Based on research using a t-test with a significant level = 0.05 with the results of the hypotensive test analysis showing the final ability of students with thong (2.434) > table (1.699), it can be concluded that students' learning outcomes in mathematics class VII SMP Negeri 3 Lubuklinggau for the 2022/2023 academic year after the application of the Indonesian realistic education approach (PMRI) to learning mathematics results.
Correction of Hypomimia Through Activation of Gait Function in Patients with Parkinson`s Disease
Authors:   Prof. V.F. Voino-Yasenetsky Krasnoyarsk State Medical University, Khomchenkova A.A. ,   Krasnoyarsk, Russian Federation, Prokopenko S.V. ,   Prof. V.F. Voino-Yasenetsky Krasnoyarsk State Medical University; Krasnoyarsk, Russian Federation, Ismailova S.B. ,   Prof. V.F. Voino-Yasenetsky Krasnoyarsk State Medical University; Krasnoyarsk, Russian Federation, Ashikhmina Yu.N. ,   Prof. V.F. Voino-Yasenetsky Krasnoyarsk State Medical University; Krasnoyarsk, Russian Federation, Denisova E.S. ,   Prof. V.F. Voino-Yasenetsky Krasnoyarsk State Medical University; Krasnoyarsk, Russian Federation
Published: November 2023

Aim: To assess the influence of gait function activation on manifestations of hypomimia in patients with Parkinson's disease (PD). Design: A comparative clinical study. Materials and methods. The study enrolled 18 patients with stage of 2–3 PD according to Hoehn — Yahr Rating Scale aged 70 [65; 76] years. Analysis of facial expression in PD patients was analysed by using a proprietary method of computer video-analysis of facial muscle movement. Activation of the gait function used another proprietary method: the apparatus for functional foot therapy that mechanically activates the rear push of the foot at the moment of the lift of the foot from the supporting surface. Results. Activation of the gait function has statistically significantly improved the mimic function of the face, in particular the blink frequency (p = 0.022), eyebrow movement amplitude along the Y axis in the «brow furrow» test (p = 0.048) and the amplitude of mouth movement while reading a text along the axis X (p = 0.012). Conclusion. The confirmation of the decrease of hypomimia manifestations through affecting the condition of general hypokinesia creates the prerequisites for appearance of rehabilitation methods making it possible to perform simultaneously correction of these two symptoms. Keywords: Parkinson’s disease, hypomimia, hypokinesia, gait function activation.
STUDI LITERATUR: PENGGUNAAN E-LEARNING BERBASIS WEBSITE PADA PEMBELAJARAN FISIKA
Authors: Putra Dicky Cahyadi Eko , Anoovasho Jhelang , Mardaya Mardaya
Published: November 2023

Tujuan dari penelitian ini adalah untuk mengetahui bagaimana kelebihan dan kendala penggunaan e-learning berbasis website pada pembelajaran fisika. Metode untuk mencapai tujuan tersebut adalah penelitian kepustakaan. Penelitian dilakukan dengan mereview berbagai jurnal penelitian e-learning berbasis website di sekolah tentang studi fisika yang diterbitkan dalam 10 tahun terakhir. Hasil penelitian menunjukkan bahwa penggunaan e-learning berbasis website paling banyak memberikan keuntungan sebagai sumber belajar siswa, sedangkan kendala yang paling banyak dalam penggunaan e-learning berbasis website adalah sekolah harus memiliki layanan internet yang cepa
IDENTIFIKASI KESULITAN BELAJAR PESERTA DIDIK DALAM PEMBELAJARAN FISIKA SECARA DARING PADA MASA PANDEMI COVID-19
Authors: Mastuti Mastuti , Nurlina Nurlina , Mutmainna Mutmainna
Published: November 2023

Tujuan dari penelitian ini adalah untuk mengetahui faktor penyebab kesulitan yang dialami oleh peserta didik selama pembelajaran fisika secara daring pada masa pandemi Covid-19. Penelitian ini menggunakan penelitian kuantitatif dengan metode survei, teknik pengumpulan data melalui wawancara.  Data yang didapatkan dianalisis secara deskriptif dengan jumlah populasi sebanyak 43 responden yang terdiri atas kelas XI IPA 1 dan IPA 2 dengan teknik pengambilan sampel menggunakan sampling jenuh. Hasil penelitian diperoleh bahwa kesulitan belajar dipengaruhi oleh dua faktor yaitu faktor eksternal dan internal. Faktor eksternal meliputi kepemilikan HP dan laptop, jaringan internet, dan penggunaan aplikasi sedangkan faktor internal meliputi kesulitan memahami materi, motivasi, dan tugas.  Ditinjau dari faktor eksternal, seluruh peserta didik memiliki HP, namun masih terdapat kesulitan dalam mengunduh file karena penyimpanan penuh dan akses jaringan yang tidak optimal membuat peserta didik kurang bersemangat mengikuti pembelajaran serta penggunaan aplikasi yang berbeda-beda menghabiskan banyak kuota sementara faktor internal, peserta didik malas membaca lewat file karena HP memiliki tampilan layar yang kecil dan peserta didik kesulitan mengerjakan tugas yang terlalu banyak. Sedangkan ditinjau dari faktor eksternal berdasarkan gender, peserta didik laki-laki cenderung mengalami kesulitan mengunduh file, cenderung peserta didik perempuan mengalami kesulitan belajar terkait kuota dan jaringan, peserta didik perempuan lebih unggul menggunakan aplikasi sementara ditinjau dari faktor internal, peserta didik laki-laki cenderung mengalami kesulitan memahami materi, peserta didik laki-laki lebih mematuhi aturan serta dalam mengerjakan tugas peserta didik perempuan lebih unggul.
ANALISIS PERAN SUHU PADA PERTUMBUHAN DAN PERKEMBANGAN TANAMAN STROBERI
Authors: Mahardika I Ketut , Bektiarso Singgih , Santoso Rike Aji , Novit Andriani , Saiylendra Revaldy Bisma , Dewi Renisa Kusuma
Published: November 2023

Perubahan iklim menyebabkan suhu di bumi semakin meningkat, ketika suhu meningkat maka tidak banyak hal yang diuntungkan tetapi lebih banyak hal yang dirugikan seperti terjadinya kemarau yang mengakibatkan lahan pertanian menjadi kering, tak hanya itu derajat suhu akan meningkat sehingga tanaman tanaman lain juga ikut terpengaruh. Seperti yang kami akan bahas yaitu tanaman stroberi juga akan mengalami penghambatan dalam pertumbuhan dan perkembangan karena pengaruh perubahan suhu. Suhu ialah suatu aspek yang penting di dalam pertumbuhan dan perkembangan tanaman karena. Secara teori jika pada lingkungan memiliki suhu minimum maka tanaman tidak bisa bertumbuh dan jika lingkungan suhu optimum bisa mengakibatkan laju pertumbuhan menjadi tinggi tetapi pada tanaman stroberi berbanding terbalik dengan teori karena membutuhkan suhu rendah untuk bisa tumbuh dan berkembang dengan optimal. Sehingga tumbuhan stroberi umumnya pembudidayaannya dilakukan di dataran tinggi, hal ini disebabkan syarat untuk bertumbuh membutuhkan lingkungan yang suhunya dingin dan lembab dimana memiliki suhu rata-rata antara 17–20°C, kelembaban 80–90 %, penyinaran 8-10 jam per hari dan curah hujan sekitar 600mm–700mmpertahun. Tidak hanya dataran tinggi, banyak juga masyarakat yang menanam stroberi di dataran medium ataupun dataran rendah, padahal dataran rendah memiliki suhu yang tinggi hal tersebut dapat memicu terjadinya kegagalan dalam pertumbuhan dan perkembangan tanaman stroberi, Pertumbuhan yang dialami oleh suatu tanaman sangatlah mendapatkan pengaruh dari suhu. Tiap spesies tanamam maupun varietas tanaman mempunyai suatu kerentanan atas suhu tertentu, yakni suhu minimum, optimum dan maksimum. Apabila lingkungan suhu minimum tentunya tanaman tidak bisa bertumbuh dan berkembang dengan baik. Peran suhu pada pertumbuhan dan perkembangan tanaman stroberi berpengaruh pada buahnya, hasil itu dapat dilihat ketika buahnya dibandingkan antara yang ditanam pada dataran tinggi dengan dataran rendah.
PENGARUH MEDIA PEMBELAJARAN MENGGUNAKAN MIND MAP BERBANTUAN LKPD TERHADAP PEMAHAMAN KONSEP FISIKA PESERTA DIDIK
Authors: M Musdar , Lutfin Nursakinah Annisa , Hasniati Hasniati
Published: November 2023

Penelitian ini bertujuan untuk mengetahui perbedaan yang signifikan pemahaman konsep peserta didik antara kelas yang menggunakan mind map berbantuan LKPD dengan kelas yang tidak menggunakan mind map berbantuan LKPD pada pembelajaran fisika kelas X SMA Negeri 1 Majene. Jenis penelitian ini adalah quasi-eksperimen dengan desain nonequevalent control design. Penelitian ini dilakukan pada dua kelas, yaitu kelas X MIPA 3 sebagai kelas kontrol dan kelas X MIPA 4 sebagai kelas eksperimen. Pada kelas eksperimen menggunakan media pembelajaran mind map berbantuan LKPD. Sedangkan pada kelas kontrol tidak menggunakan media pembelajaran mind map berbantuan LKPD. Teknik pengumpulan data melalui tes pemahaman konsep berupa pretest dan posttest. Data dianalisis dengan statistik deskriptif dan statistik inferensial menggunakan uji t. Hasil penelitian yang diperoleh membuktikan bahwa terdapat perbedaan yang signifikan pemahaman konsep peserta didik antara kelas yang menggunakan mind map berbantuan LKPD dengan kelas yang tidak menggunakan mind map berbantuan LKPD pada pembelajaran fisika kelas X SMA Negeri 1 Majene. Terlihat dari hasil uji ( thitung = 2,113 > ttabel = 2,004) pada taraf signifikan 0,05.
ANALISIS PENGELOLAAN STANDAR ORGANISASI DAN PERSONALIA LABORATORIUM DI SMAN 1 GENTENG BANYUWANGI
Authors: Putri Miftahul Gea Alivia , Nafisah Nisrina , Putri Miftahul  Gea Alivia , Nafilla Vina Zulviana , Cahayati Era , Indriyani Amalia Rosyida , Nuraini Lailatul , Harijanto Alex
Published: November 2023

Penelitian ini bertujuan untuk mengetahui standarisasi dan pengelolaan laboratorium fisika di SMA Negeri 1 Genteng. Jenis penelitian yang digunakan adalah penelitian kualitatif deskriptif. Penelitian ini dilakukan secara langsung dengan wawancara serta observasi di SMA Negeri 1 Genteng. Instrumen penelitian yang digunakan adalah angket berisi pertanyaan tentang standar fasilitas labortorum dan mekanisme praktikum. Hasil penelitian menunjukkan bahwa standarisasi laboratorium fisika di SMA Negeri 1 Genteng yang berkaitan dengan ruang laboratorium fisika, struktur organisasi dan administrasi, pengelolaan, peralatan keselamatan kerja, serta mekanisme pelaksanaan praktikum memiliki klasifikasi baik. Untuk standarisasi tempat penyimpanan, perlatan, dan bahan praktikum memiliki klasifikasi sangat baik. Sehingga dapat dikatakan bahwa laboratorium fisika SMA Negeri 1 Genteng temasuk kategori standarisasi yang baik.
Lixus fasciculatus Boheman, 1836 (Coleoptera: Curculionidae) – a nationally rare weevil species recorded on the Czechowskie Hills in Lublin (E Poland).
Authors: Kowalczyk Magdalena , Czarniawski Wojciech , Rysiak Anna , Wagner Grzegorz
Published: November 2023

Considered rare weevil species Lixus fasciculatus Boheman, 1836 (Curculionidae) was recorded on the Czechowskie Hills in Lublin (E Poland) in 2022. More than 30 adults were found, as well as numerous L1 – L3 larvae and eggs. All the developmental stadia were found on mugwort (Artemisia vulgaris) growing in localities with xerothermic or ruderal plant communities.
Оптимізація профілактики поведінкових чинників ризику в практиці медичного працівника
Authors: Biduchak А. S.
Published: November 2023

Розроблено функціонально-організаційну модель роботи медичного працівника з профілактики хвороб системи кровообігу, основою якої є корекція поведінкових чинників ризику.