bluuebunny/crossref_metadata_2025 huggingface dataset:
International Standards of Corporate Security
Authors: Otenko Irina , Preobrazenska Olena
Published: May 2017

Under the influence of the processes of intensification of relations among internal and external environment of companies the necessity of compliance to international standards is rising significantly. There is a growing need for a deep understanding of corporate relations, using of control mechanisms over the company, demands for its transparency, balance of stakeholders interests and rights. These processes determine the effectiveness of corporate security systems. Currently, the capacity to implement effective management of corporate security involves the development of a business approach that creates long-term shareholder value by combining use of opportunities and risk management that meet applying to international standards and practices. The concept of security is mainly designed for a long period of time. With the development of open market relations and strengthening of legal regulation of the market measures, the emphasis of security has been transferring to the sphere of economy. Security becomes an essential priority for any kind of business interaction. In order to find out where security problems currently stand in practice and within academia circles the relevant sources of information were analyzed. The result of formalization, generalization of best international management practices and expertise are defined in international standards. In the article the content of the application and features of standards relating to key aspects of corporate security at the national and international markets are considered.
Variability of Methodical Use of System Models for Determining the Cost in Construction
Authors: Bondar Elena , Stitsenko Vlad
Published: May 2017

This article presents a possibility of system-based implementation of determining the cost of work in construction. Based on the principles of systemic and variable visibility a logistics mechanism of the use of systemic economic and mathematical models for determining the cost of work in construction is proposed. The proposed mechanism includes specific regulatory features, contractual proposals and specific features of construction projects. The abovementioned methodology is based on a systemic synthesis of economic feasibility and technological complexity of construction work.
Conceptualizing Functional Distribution of Authority to Regulation Social, Ecological, and Economic Development of Micro-Regions
Authors: Panukhnyk Olena
Published: May 2017

Objective necessity to conceptualize functional distribution of authority to regulation social, ecological, and economic development of micro-regions has been substantiated to provide efficiency of their policy regulation as well as effective regulating functions. The content of principles to be a basis to regulation social, ecological, and economic development of micro-regions has been shown and developed. Functional and target structure of mechanism to regulation social, ecological, and economic development of micro-region has been proposed. A role of each regulation subsystem has been identified; its purpose and functions have been determined; components and regulation tools have been listed.
Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
Authors: Woerle Judith , Camarda Massimo , Schneider Christof W. , Sigg Hans , Grossner Ulrike , Gobrecht Jens
Published: May 2017

In this study, electrical properties of MOS capacitors with varying oxide thicknesses have been investigated. The oxide growth was performed at 1050 °C without any further post-oxidation annealing steps resulting in oxide thicknesses between 2 nm and 32 nm. Capacitance-Voltage measurements revealed a decreasing density of interface defects for increasing oxide thickness suggesting a deterioration of the interface at the initial stage of the growth.
Two-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
Authors: Chinone Norimichi , Kosugi Ryoji , Tanaka Yasunori , Harada Shinsuke , Okumura Hajime , Cho Yasuo
Published: May 2017

A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO2/SiC structure samples with different post oxidation annealing (POA) conditions were measured. We observed that the local DLTS signal decreases with POA levels, which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO2/SiC interface.
Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation
Authors: Russell Stephen , Jennings Michael R. , Dai Tian Xiang , Li Fan , Hamilton Dean P. , Fisher Craig A. , Sharma Yogesh K. , Mawby Philip  Andrew , Pérez-Tomás Amador
Published: May 2017

MOS Capacitors are demonstrated on 4H-SiC using an octahedral ABO3 ferroic thin-film as a dielectric prepared on several buffer layers. Five samples were prepared: ABO3 on SiC, ABO3 on SiC with a SiO2 buffer (10 nm and 40 nm) and ABO3 on SiC with an Al2O3 buffer (10nm and 40 nm). Depending on the buffer material the oxide forms in either the pyrochlore or perovskite phase. A better lattice match with the Al2O3 buffer yields a perovskite phase with internal switchable dipoles. Hysteresis polarization-voltage loops show an oxide capacitance of ~ 0.2 μF/cm2 in the accumulation region indicating a dielectric constant of ~120.
Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)
Authors: Tsukimoto Susumu , Ise Tatsuhiko , Maruyama Genta , Hashimoto Satoshi , Sakurada Tsuguo , Senzaki Junji , Kato Tomohisa , Kojima Kazutoshi , Okumura Hajime
Published: May 2017

Evaluation of surface damage layers formed by mechanical grinding processes is indispensable in epi-ready SiC wafer preparation. As well as microstructure, the analysis of local strain distribution in the damage layers gives a clue on control of the wafer quality. Advanced electron backscatter diffraction (EBSD) technique is applied to evaluate the strain distribution of the damage layers. It is revealed that the elastic strain distribution can be classified into a hierarchy of three regions with respect to depth from the surface. Combining EBSD analysis with TEM observation, large compressive elastic strain and misorientation are introduced in the highly-defective region underneath the ground wafer surface. In addition, the gradient distribution of the strain is observed clearly below the highly-defective region. The knowledge of correlating between strain distribution and microstructure is promising to control the damage layer for the wafer preparation.
Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
Authors: Yang Yu , Guo Jian Qiu , Raghothamachar Balaji , Dudley Michael , Chung Gil Yong , Sanchez Edward , Manning Ian
Published: May 2017

Synchrotron X-ray Topography with grazing incidence geometry is useful for discerning defects at different depths below the crystal surface, particularly for 4H-SiC epitaxial wafers. However, the penetration depths measured from X-ray topographs are much larger than the theoretical values. In order to interpret this discrepancy, we simulate topographic contrast of dislocations based on two of the most basic contrast formation mechanisms – orientation contrast and kinematical contrast. Orientation contrast considers merely the displacement fields associated with dislocations while kinematical contrast also takes the diffraction volume into account. The diffraction volume is defined by the effective misorientation around dislocations and the rocking curve width for particular diffraction vector. Ray Tracing Simulation has been carried out to visualize dislocation contrast for both models, taking into account the photoelectric absorption of X-ray beams inside the crystal. Results show that orientation contrast plays the key role in determining both the contrast and X-ray penetration depths for different types of dislocations.
Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination
Authors: Galeckas Augustinas , Ayedh Hussein M. , Bergman J. Peder , Svensson Bengt Gunnar
Published: May 2017

We address the key factors limiting charge carrier lifetime in 4H-SiC epilayers by demonstrating a viable method for eliminating carbon vacancy (VC) related Z1/2 lifetime killer sites and by introducing a novel approach in depth-resolved characterization of the carrier lifetimes across the epitaxial layer, which allows monitoring the efficacy of the proposed defect reduction scheme also exposing surface and interface recombination effects. We show that a moderate-temperature annealing conducted at 1500 °C for 6 hours under C-rich thermodynamic equilibrium conditions in effect eliminates carbon vacancies in epilayers to the levels below the detection limit (1011 cm-3) of DLTS measurements. The efficient reduction of VC-related Z1/2 sites upon thermal treatment is further proven by a significant increase of the minority carrier lifetime from 0.3µs to 1 µs, the upper limit apparently set by epilayer thickness dependent lifetime. Equally important is the extensive range of defect elimination as evidenced by consistently enhanced lifetime throughout entire 40 μm-thick epilayer, thus suggesting immediate practical implication as a lifetime control method suitable for variable thickness 4H-SiC epilayers.
Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties
Authors: Hosoi Takuji , Nagai Daisuke , Sometani Mitsuru , Shimura Takayoshi , Takei Manabu , Watanabe Heiji
Published: May 2017

This paper reviews our recent work on ultrahigh-temperature oxidation of 4H-SiC(0001) surfaces. Our rapid thermal oxidation experiments demonstrated the reaction-limited linear growth at temperatures ranging from 1200 to 1600°C. The Arrhenius plot of linear growth rate of thermal oxidation can be fitted by a linear line, and the activation energy of oxide growth in dry O2 oxidation was estimated to be 2.9 eV. We also found that unintentional oxidation during the cooling down process severely degrades SiO2/SiC interface properties, resulting in positive flatband voltage shift (VFB) and hysteresis in capacitance-voltage (C-V) characteristics regardless of oxidation temperature. By effectively suppressing oxide growth during the cooling process, we have clarified that SiO2/SiC interface properties depend on oxidation temperature and the lowest interface state density was obtained for the oxide formed at 1450°C.
Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation
Authors: Guillemin Sophie , Esteve Romain , Heidorn Christian , Unegg Gerald , Reinwald Gerald , Hartl Marcella , Kueck Daniel
Published: May 2017

In this work investigation on wet etching of ion implanted 4H-SiC has been performed. Starting with the search for a suitable etching solution is followed by investigations on how to damage 4H-SiC in an efficient way involving different implantation species in various doses. With the help of Monte Carlo simulations a model for the experimental findings is proposed to derive the limitations for the wet etch capability.
Fabrication of Thick Free-Standing Lightly-Doped n-Type 4H-SiC Wafers
Authors: Dahal Rajendra P. , Chowdhury Sauvik , Hitchcock Collin W. , Chow T. Paul , Bhat I.
Published: May 2017

In this work, we have developed a selective wet etching technique for n+-SiC substrate using electrochemical etch process. A mixture of hydrofluoric acid and hydrogen peroxide was used as an electrolyte and the etch rates exceeding 200 μm per hour at the current density of 50 mAcm-2 was achieved. This process is highly selective and the etching process stops at the interface of n+ SiC substrate and n-SiC epi layer. Using this process, we have successfully fabricated 180 to 250 μm thick 4’’ n-SiC epitaxial free standing wafers by separating them from a 350 μm thick n+ SiC substrate. After the substrate is completely removed, free standing wafer is characterized for wafer bow and minority carrier lifetime, using both Si-face and C-face. The wafer bow was reduced from 40 μm to 20 μm after the substrate removal. It was found that the process of removing the substrate does not introduce any extra damage to the wafer as far as the lifetime is concerned. The hole lifetime measured by microwave photoconductivity decay technique was unchanged at around 2 μsec, measured from both Si-face and C-face. These results are very promising and open up many avenues for many device applications where lightly doped free standing epitaxial semiconductor thin film is needed.
Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing
Authors: De Silva Wijemuni , Kawasaki Teruhisa , Kikkawa Takamaro , Kuroki Shin Ichiro
Published: May 2017

Non-equilibrium laser silicidations for low-resistance ohmic contact to 4H-SiC C-face with Titanium was demonstrated. Ti is one of carbon-interstitial type metals. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance becomes larger. For suppressing the carbon agglomeration, in this research, nanoseconds non-equilibrium laser annealing was introduced, and also Ti was introduced to form both silicide and carbide. Ti (75, 100 nm)/SiC and Ni (75, 100 nm)/SiC contacts were formed on C-face side of 4H-SiC substrates. Electrical contact properties were investigated after 40 nanoseconds pulse laser annealing in Ar ambient and rapid thermal annealing. As the result, In the case of laser annealing, the lowest specific contact resistance of 2.4×10-4 Ωcm2 was obtained in Ti (75 nm)/SiC sample in the laser power of 2.5 J/cm2.
The Effect of Incomplete Ionization on SiC Devices during High Speed Switching
Authors: Ebihara Kohei , Kawahara Koutarou , Watanabe Hiroshi , Nakata Shuhei , Yamakawa Satoshi
Published: May 2017

SiC devices such as MOSFETs and SBDs reduce power loss in fast-switching condition as compared to Si devices. However, shallow and deep levels in SiC significantly affect dynamic characteristics of SiC devices. We already reported that high densities of deep levels were discovered in Al+-implanted samples other than the shallow Al acceptor level. In this work, we applied the deep level to the TCAD simulation, and examined the behavior of the carriers at high dV/dt conditions.
1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance
Authors: Peters Dethard , Aichinger Thomas , Basler Thomas , Bergner Wolfgang , Kueck Daniel , Esteve Romain
Published: May 2017

A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is designed for an on-resistance of 45 mΩ. In order to be compatible to various standard gate drivers the gate voltage range is designed for-5 V in off-state and +15 V in on-state. Long term gate oxide life time tests reveal that the extrinsic failure evolution follows the linear E-model which allows a confident prediction of the failure rate within the life time of the device of 0.2 ppm in 20 years under specified use condition.
High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
Authors: Ishibashi Naoto , Fukada Keisuke , Bandoh Akira , Momose Kenji , Osawa Hiroshi
Published: May 2017

This paper presents a high-quality 100/150 mm p-type 4H-SiC epitaxial wafer prepared by chemical vapor deposition; this wafer is suitable for high-voltage bipolar device applications. The density of killer defects for bipolar devices including downfalls, triangular-shaped defects, and basal plane dislocations (BPDs), is less than 0.1 cm-2 in the proposed 100 mm n/p multilayer epitaxial wafer. The in-plane thickness and doping uniformity of the 150 mm p-layer is 3.0% and 11.0%, respectively. The doping concentration of the p-layer can be controlled in the 1E+16 cm-3 to 1E+19 cm-3 range.
Total Dose Effects on 4H-SiC Bipolar Junction Transistors
Authors: Suvanam Sethu Saveda , Lanni Luigia , Malm B. Gunnar , Zetterling Carl Mikael , Hallén Anders
Published: May 2017

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.
16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development
Authors: Sampayan Kristin
Published: May 2017

A transconductance-like behavior similar to that of junction semiconductor devices is observed in photonically excited wide bandgap (WBG) semi-insulating material without a junction. This property offers the possibility of power electronic devices capable of virtually unlimited voltage and current carrying capability due to intrinsic electrical isolation of the controlling voltage from the switched high voltage. A proof of concept experiment demonstrated the transconductance-like property in burst mode switching to >16 kV, 50% duty cycle, and 75 kHz. Our eventual goal is to combine the light source, optics and the WBG material to form a compact module that is functionally equivalent to junction power electronic devices. In this paper, we present the background, our generalized approach for implementing photoconductive switching for potential applications to high repetition rate (>50 kHz), high voltage (>15 kV) power switching, our associated material measurements, and our path forward to multi-10s of ampere devices.
Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
Authors: Ryu Sei Hyung , Lichtenwalner Daniel J. , van Brunt Edward , Capell Craig , O’Loughlin Michael J. , Jonas Charlotte , Lemma Yemane , Zhang J. , Richmond Jim , Burk Albert A. , Hull Brett , O’Brien Heather , Ogunniyi Aderinto , Lelis Aivars J. , Casady Jeff , Grider David , Allen Scott , Palmour John W.
Published: May 2017

The impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated. 15 kV 4H-SiC P-GTOs with 140 μm thick drift layers, with and without 1450°C lifetime enhancement oxidation (LEO) process, were compared. The LEO process increased the average carrier lifetime in p-type epi layer from 0.9 μs to 6.25 μs, and it was observed that the effectiveness of the lifetime enhancement process was very sensitive to the doping concentration. The device with the LEO process showed a significant reduction in forward voltage drop and a substantially lower holding current, as expected from the carrier lifetime measurements. However, a slight reduction in blocking capability was also observed from the devices treated with LEO process. The common emitter current gain (β) of the wide base test NPN BJT was approximately 10X higher for the wafer with LEO process.
Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing
Authors: Pristavu Gheorghe , Brezeanu Gheorghe , Badila Marian , Draghici Florin , Pascu Razvan , Craciunoiu Florea , Rusu Ion , Pribeanu Adriana
Published: May 2017

Different characterization techniques have been used in order to evaluate the electrical behavior of Pt/SiC-Schottky diodes and determine their capability as temperature sensors. I-V characteristics for fabricated devices were measured up to 400°C. Subsequent conventional parameter extraction evinced a barrier height increase with temperature, suggesting inhomogeneous contact formation. The energy activation method was carried out in order to identify both the effective barrier height for the devices and the non-uniformity parameter (p). Despite severe degrees of contact inhomogeneity, the diodes were found adequate for temperature sensing applications over the 26°C – 400°C range, with sensitivities up to 1.59 mV/°C.
Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes
Authors: Afanasyev Alexey V. , Ilyin Vladimir A. , Luchinin Victor V. , Reshanov Sergey A. , Schöner Adolf , Sergushichev K.A. , Smirnov A.A.
Published: May 2017

4H-SiC UV-photodetectors based on full-epitaxial p +p-n+ multilayer structures werefabricated. The diodes were irradiated with fast neutrons up to the fluence of 1·1014 cm-2 . Current-voltage characteristics, life time of non-equilibrium charge carriers as well as photosensitivityspectra of the diodes before and after irradiation were investigated. The studies showed that PiNUV-photodiodes with base doping below 1·1015 cm-3 retain their performance up to the fluence of5·1012 neutrons per cm2 . The further increase in fast neutron fluence stimulates the creation ofexcessive deep recombination centers. This leads to degradation of I-V-characteristics, reduction ofcarrier life time and, consequently, to degradation of the photosensitivity of devices.
Optimization of 4H-SiC Photodiodes as Selective UV Sensors
Authors: Matthus C.D. , Burenkov A. , Erlbacher Tobias
Published: May 2017

The spectral responsivity of 4H-SiC photodiodes was studied and optimized in this paper with the aim to realize UV photo-sensors, selectively sensitive either to harder or to softer UV radiation. The spectral selectivity of the SiC-photodiodes was achieved by optimizing doping profiles in the active regions of the photodiodes and of the anti-reflective coating. A shallow doping profile of the p+-emitter allowed an enhancement of sensitivity for hard UV radiation. Deeper doping profiles were chosen for detection of softer UV radiation. The impact of the variations of the thickness of protective and anti-reflective layers was studied as well.
Corona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) Pseudosubstrates
Authors: Reiprich Johannes , Stauden Thomas , Berthold Theresa , Himmerlich Marcel , Pezoldt Jörg , Jacobs Heiko O.
Published: May 2017

Gallium oxide nanowires were grown on different substrates using a corona plasma assisted vapor phase epitaxy process and gold catalyst. It is shown that the silicon carbide pseudo substrate in combination with the plasma excitation of the gas phase supports the growth of the gallium oxide nanowires. Analyzing the orientation of the nanowires with respect to the growth surface, it is concluded that the nanowires growth proceed along the fast growth direction of gallium oxide.
Challenges on Drive Circuit Design for Series-Connected SiC Power Transistors
Authors: Peftitsis Dimosthenis , Rabkowski Jacek , Nee Hans Peter , Undeland Tore
Published: May 2017

The breakdown voltages of the currently available 1.2 and 1.7-kV classes Silicon Carbide (SiC) transistors are not sufficient to operate under medium blocking voltages. On the other hand, the fabrication yields of the available high-voltage SiC transistors are still low, resulting in low current capabilities. Series-connection of several individual transistors is the solution to meet medium blocking voltages and high current ratings. This paper identifies the most crucial design challenges of gate and base drive circuits suitable for driving fast-switching series-connected SiC transistors. These challenges are presented and analyzed using Finite Element Method simulations and experimental investigations.
Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds
Authors: Mokhov Evgeniy , Nagalyuk Sergey , Soltamov Victor A.
Published: May 2017

The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport) method has been studied by optical microscopy in combination with chemical etching. It is established that free lateral growth on protruding relief elements (mesas) is accompanied by a sharp decrease in the density of threading dislocations and micropipes. The decreased density of dislocations is retained after growing a thick layer that involves the overgrowth of grooves that separated individual mesas.
Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with Gan-on-SiC Hemts
Authors: Lang J. , Belov Ilia , Hellen Johan , Lim Jang Kwon , Schodt Bo , Nilsson Torbjorn , Poder Ralf , Bakowski Mietek , Leisner Peter
Published: May 2017

RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) followed by electrical, thermal and structural evaluation. Two types of solders i.e. Sn63Pb36Ag2 and lead-free SnAgCu (SAC305) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermo-mechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.
Investigation of Direct Water Photoelectrolysis Process Using III-N Structures
Authors: Usikov Alexander , Nikiforov Alexey , Khait Oleg , Medvedev Oleg , Ermakov Ivan , Papchenko Boris , Puzyk Mikhail V. , Antipov Andrey , Barash Iosif , Kurin Sergey , Roenkov Alexander , Helava Heikki , Makarov Yuri
Published: May 2017

GaN, GaN/AlGaN and GaN/InGaN-based structures were used to study water photoelectrolysis in KOH-based electrolyte, measurement of current-potential characteristics, investigation of electrode corrosion and for hydrogen generation. The corrosion process of p-n AlGaN/GaN structure starts in the p-layers, spreads via vertical channels associated with threading defects, and continues laterally along the n-layers, where large local hollows and voids were observed. The H2 production rate of 0.3-0.6 ml/cm2×h was measured for n-GaN structure.
Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD
Authors: Hens Philip , Brow Ryan , Robinson Hannah , Cromar Michael , van Zeghbroeck Bart
Published: May 2017

In this paper, we report, for the first time, growth of high-quality single-crystalline 3C-SiC on silicon substrates using Hot Filament Chemical Vapor Deposition (HF-CVD). Rocking curve X-Ray diffraction (XRD) measurements revealed a full-width at half maximum (FWHM) as low as 333 arcsec for a 15 μm thick layer. Low tensile strain, below 0.1%, was measured using Raman spectroscopy. This quality was achieved with a carefully optimized process making use of the additional degrees of freedom the hot filaments create. For example, the hot filaments allow for precursor pre-cracking. Additionally, they allow a tuning of the vertical thermal gradient which creates an improved thermal field compared to classic Chemical Vapor Deposition techniques used for the deposition of this material today.
Transfer of Representations and Orbital Integrals for Inner Forms of GLn
Authors: Cohen Jonathan
Published: May 2017

We characterize the Local Langlands Correspondence (LLC) for inner forms of GLn via the Jacquet–Langlands Correspondence (JLC) and compatibility with the Langlands Classification. We show that LLC satisfies a natural compatibility with parabolic induction and characterize LLC for inner forms as a unique family of bijections Π(GLr(D)) → Φ(GLr(D)) for each r, (for a fixed D), satisfying certain properties. We construct a surjective map of Bernstein centers ℨ(GLn(F)) → ℨ(GLr(D)) and show this produces pairs of matching distributions in the sense of Haines. Finally, we construct explicit Iwahori-biinvariant matching functions for unit elements in the parahoric Hecke algebras of GLr(D), and thereby produce many explicit pairs of matching functions.
Multivalued function spaces and Atsuji spaces
Authors: Naimpally Som
Published: May 2017

In this paper we present two themes. The first one describes a transparent treatment of some of the recent results in graph topologies on multi-valued functions. The study includes Vietoris topology, Fell topology, Fell uniform topology on compacta and uniform topology on compacta. The second theme concerns when continuity is equivalent to proximal continuity or uniform continuity.
Quasi-pseudometric properties of the Nikodym-Saks space
Authors: Ferrer Jesús
Published: May 2017

For a non-negative finite countably additive measure μ defined on the σ-field Σ of subsets of Ω, it is well known that a certain quotient of Σ can be turned into a complete metric space Σ (Ω), known as the Nikodym-Saks space, which yields such important results in Measure Theory and Functional Analysis as Vitali-Hahn-Saks and Nikodym's theorems. Here we study some topological properties of Σ (Ω) regarded as a quasi-pseudometric space.
Graph topologies on closed multifunctions
Authors: Di Maio Giuseppe , Meccariello Enrico , Naimpally Somashekhar
Published: May 2017

In this paper we study function space topologies on closed multifunctions, i.e. closed relations on X x Y using various hypertopologies. The hypertopologies are in essence, graph topologies i.e topologies on functions considered as graphs which are subsets of X x Y . We also study several topologies, including one that is derived from the Attouch-Wets filter on the range. We state embedding theorems which enable us to generalize and prove some recent results in the literature with the use of known results in the hyperspace of the range space and in the function space topologies of ordinary functions.
Prélèvement: origem, evolução e ocaso do privilégio nas sucessões internacionais na França
Authors: Meinero Fernando Pedro
Published: May 2017

O presente artigo visa mostrar a evolução de um mecanismo de proteção a herdeiros nacionais denominado prelévèment, vigente até pouco tempo atrás no Código Civil francês. Com alguma semelhança com o benefício da lei mais favorável na legislação brasileira, o prélèvement permitia que os herdeiros franceses que tivessem sido excluídos em sucessões abertas no estrangeiro, pudessem compensar esse prejuízo tomando uma porção equivalente sobre a herança aberta em território francês. Para atingir o objetivo, utiliza-se do método histórico e analisa o contexto em que a norma surgiu, como ela foi interpretada pela doutrina e pela jurisprudência daquele país e, finalmente, os motivos que levaram a ser declarada inconstitucional pelo Conselho Constitucional francês no ano de 2011. A análise revela uma deturpação da ideia original de proteção patrimonial de determinados herdeiros, transformado em um privilégio baseado na nacionalidade dos mesmos, contrária ao princípio da igualdade.
MERCOSUL e o meio ambiente: perpesctivas da tutela ambiental regional
Authors: D'Isep Clarissa Ferreira Macedo
Published: May 2017

O MERCOSUL, mediante a aprovação do Acordo-Quadro sobre Meio Ambiente do MERCOSUL (AQMAM), instituiu o comando de promoção do "Desenvolvimento sustentável" e de "proteção do meio ambiente", inaugurando assim a tutela ambiental regional do Cone Sul. O presente artigo trata dos efeitos jurídicos que se podem extrair, como a identificação da proteção ambiental integrada e a proteção ambiental autônoma, que formam a Direito Ambiental Regional do bloco, que deverá orientar a gestão ambiental, notadamente dos recursos naturais compartilhados. Tem-se evidênciado uma nova fase no direito das integrações, que possibilitará as partes de exercitarem a cooperação na gestao da coisa comum e quiça, colaborar para o avanço na cooperação sócioeconômica. São análisados alguns dos desafios de implementação são evidenciados no presente estudo.
Dreito humano à alimentação, (in) segurança alimentar e desenvolvimento: os desafios à realização progressiva na América Latina
Authors: Camera Sinara , Wegner Rubia
Published: May 2017

Desde a Conferência da Food and Agriculture Organization (FAO) de 1996, O direito humano à alimentação foi estabelecido como obrigação dos Estados nacionais. À comunidade internacional coube o papel de garantir que, nos países periféricos, fossem criados mecanismos de implementação de controle dessas obrigações. O que está em questão é garantir o acesso ao alimento e, nesse aspecto, além da geração de emprego e renda, estão a distribuição e a comercialização dos alimentos. Esses elos da cadeia ocorrem especialmente nos países subdesenvolvidos à revelia do setor privado que, em grande medida, são empresas transnacionais. O presente texto visa analisar interdisciplinarmente essas questões, à luz das medidas adotadas pelos países latino-americanos e europeus. Assim, ele foi dividido em dois momentos: primeiramente serão analisadas (des) construções históricas dos direitos humanos e os processos de internacionalização e diversificação dos direitos humanos forjando a criação de novos direitos a serem protegidos, como o direito humano à alimentação. E num segundo momento se discorrerá sobre o direito à alimentação adequada e a segurança alimentar em termos de desenvolvimento econômico.
Quando julgar se torna um espetáculo: a interação entre o Supremo Tribunal Federal e a opinião pública, a partir de reflexões da literatura estrangeira
Authors: Perrone Campos Mello Patrícia
Published: May 2017

O ensaio procura demonstrar que o Legislativo e o Executivo podem não ser representativos da vontade popular; que o Supremo Tribunal Federal, não raro, julga de acordo com a vontade da maioria; e que esquemas tradicionais de separação de poderes precisam ser problematizados para que se compreenda a interação entre o STF e a opinião pública. Argumenta-se, ainda, que não apenas as decisões contramajoritárias, mas igualmente a decisões majoritárias do Supremo devem ser objeto de crítica. A tendência à espetacularização dos julgamentos da Corte e a forte exposição de seus membros à mídia torna-os vulneráveis ao contágio informacional, ao contágio reputacional e ao efeito manada. Com esse objetivo, o artigo recorre a estudos estrangeiros que explicam a interação entre cortes constitucionais e opinião pública; examina pesquisas de opinião sobre matérias decididas pelo Congresso Nacional e submetidas ao STF; analisa o julgamento de tais casos; e avalia as declarações dos ministros sobre a influência da opinião pública nos respectivos julgamentos.
Ainda (e uma vez mais) o silêncio que entoa o triunfo de Lewis Carrol: a regra nº 42 do Supremo Tribunal Federal
Authors: Pádua Thiago Aguiar , Machado Bruno Amaral
Published: May 2017

No presente artigo discutimos dois recentes julgamentos do Supremo Tribunal Federal do Brasil em relação aos crimes praticados durante a ditadura civil-militar: a Arguição de Descumprimento de Preceito Fundamental nº 153 (constitucionalidade da lei de anistia de 1979), e a Extradição nº 1362 (requerimento de extradição de cidadão argentino que foi condenado pelo cometimento de crime de lesa-humanidade durante a ditadura argentina). Analisamos o papel do Supremo Tribunal Federal na (re) construção do “problema criminal” e do “controle penal”, em relação a crimes contra a humanidade perpetrados nos períodos da ditadura argentina (1978-1983) e brasileira (1964-1985). Buscamos inspiração no pensamento de Lola Aniyar de Castro, para quem a criminologia do Século XXI é a “criminologia dos direitos humanos”, e o controle penal é o termômetro dos direitos humanos. Ao final discutimos que parece ter havido o triunfo de Lewis Carrol, na metáfora de inversão de sentidos: quando proteger os direitos humanos passa a ser não proteger os direitos humanos, com criação de uma regra decisória ad hoc, em que “lembrar é esquecer”, e “esquecer é recordar”, desde que, em peculiar Regra nº 42, não se autorizem a investigação e a responsabilização pela prática de crimes de lesa-humanidade.
A natureza jurídica das decisões do Sistema de Solução de Controvérsias da OMC: Solucionando um Imbróglio
Authors: Capucio Camilla
Published: May 2017

O trabalho tem o objetivo de localizar o Sistema de Solução de Controvérsias da OMC na sistemática mais ampla dos órgãos adjudicatórios internacionais, sem, contudo, ignorar suas especificidades. Assim, ao adentrarmos brevemente na evolução, componentes, características e procedimentos do sistema de solução de controvérsias da OMC, o estudo da natureza jurídica das decisões emanadas deste sistema pode ser realizado de maneira sistêmica e coerente. O trabalho objetiva, pois, desconstruir, um equívoco acerca da natureza jurídica de suas decisões, constatando que, apesar da presença de um Órgão Político (Órgão de Solução de Controvérsias), as decisões emanadas deste sistema como um todo são jurídicas e obrigatórias.
Protein profile and physicochemical characteristics of meat of lambs fed diets supplemented with rapeseed oil, fish oil, carnosic acid, and different chemical forms of selenium
Authors: Przybylski Wiesław , Żelechowska Elżbieta , Czauderna Marian , Jaworska Danuta , Kalicka Katarzyna , Wereszka Krzysztof
Published: May 2017

Abstract. The objective of this study was to evaluate the physicochemical characteristics of the longissimus muscle of lambs fed a control diet containing 3 % rapeseed oil (RO) (group I); an experimental diet with 2 % RO and 1 % fish oil (FO) (group II); or experimental diets with coupled addition of 2 % RO, 1 % FO, and 0.1 % carnosic acid (CA) (group III) without/with 0.35 ppm Se as selenized yeast (SeY) (group IV) or selenate (SeVI as sodium selenate, Na2SeO4) (group V). The results showed that dietary FO or SeVI affected the ultimate pH and meat color in comparison to lambs fed the control diet. The differences noted between diets in the case of muscle tissue were as follows: myosin HC (heavy chain) and LC1 (light chain), 150 kDa, α-actinin, 60 kDa, and TnT (troponin T), 30 kDa protein. The addition of FO to lamb diets resulted in a lower content of 30 kDa proteins, which are indicators of proteolysis. Considering the protein profile of drip loss, results showed effects of dietary administration of FO, CA, and Se (as SeY and SeVI) on the abundance of the following sarcoplasmic proteins: AMPDA (AMP deaminase), PGM (phosphoglucomutase), PK/PGI (pyruvate kinase/phosphoglucose isomerase), CK/PGAK (creatine kinase/phosphoglycerate kinase), ALD (aldolase), LDH (lactate dehydrogenase), PGAM (phosphoglycerate mutase), and TPI (triosephosphate isomerase). The lower content of TPI (in group II with comparison to groups III–V) and PGAM (in group II with comparison to group I and III) could be due to a higher ultimate pH in the group with FO addition, whereas lower contents of CK/PGAK, ALD, and LDH were attributed to Se addition. In comparison to the control diet, all experimental diets without SeVI decreased the content of the sum of all assayed amino acids ( ∑ AAs), indispensable amino acids ( ∑ IAAs), and dispensable amino acids ( ∑ DAAs) in the muscle. The highest ratios of  ∑ IAAs to  ∑ DAAs and  ∑ IAAs to  ∑ AAs were found in the muscle of lambs fed the diet containing RO, FO, and CA. The FO-supplemented diet with CA and SeVI increased the abundance of methionine in the muscle in comparison to the control diet and the FO-supplemented diet without/with CA.
Derivation of aerosol profiles for MC3E convection studies and use in simulations of the 20 May squall line case
Authors: Fridlind Ann M. , Li Xiaowen , Wu Di , van Lier-Walqui Marcus , Ackerman Andrew S. , Tao Wei-Kuo , McFarquhar Greg M. , Wu Wei , Dong Xiquan , Wang Jingyu , Ryzhkov Alexander , Zhang Pengfei , Poellot Michael R. , Neumann Andrea , Tomlinson Jason M.
Published: May 2017

Abstract. Advancing understanding of deep convection microphysics via mesoscale modeling studies of well-observed case studies requires observation-based aerosol inputs. Here, we derive hygroscopic aerosol size distribution input profiles from ground-based and airborne measurements for six convection case studies observed during the Midlatitude Continental Convective Cloud Experiment (MC3E) over Oklahoma. We demonstrate use of an input profile in simulations of the only well-observed case study that produced extensive stratiform outflow on 20 May 2011. At well-sampled elevations between −11 and −23 °C over widespread stratiform rain, ice crystal number concentrations are consistently dominated by a single mode near ∼ 400 µm in randomly oriented maximum dimension (Dmax). The ice mass at −23 °C is primarily in a closely collocated mode, whereas a mass mode near Dmax ∼ 1000 µm becomes dominant with decreasing elevation to the −11 °C level, consistent with possible aggregation during sedimentation. However, simulations with and without observation-based aerosol inputs systematically overpredict mass peak Dmax by a factor of 3–5 and underpredict ice number concentration by a factor of 4–10. Previously reported simulations with both two-moment and size-resolved microphysics have shown biases of a similar nature. The observed ice properties are notably similar to those reported from recent tropical measurements. Based on several lines of evidence, we speculate that updraft microphysical pathways determining outflow properties in the 20 May case are similar to a tropical regime, likely associated with warm-temperature ice multiplication that is not well understood or well represented in models.
Re-establishing glacier monitoring in Kyrgyzstan and
Uzbekistan, Central Asia
Authors: Hoelzle Martin , Azisov Erlan , Barandun Martina , Huss Matthias , Farinotti Daniel , Gafurov Abror , Hagg Wilfried , Kenzhebaev Ruslan , Kronenberg Marlene , Machguth Horst , Merkushkin Alexandr , Moldobekov Bolot , Petrov Maxim , Saks Tomas , Salzmann Nadine , Schöne Tilo , Tarasov Yuri , Usubaliev Ryskul , Vorogushyn Sergiy , Yakovlev Andrey , Zemp Michael
Published: May 2017

Abstract. Glacier mass loss is among the clearest indicators of atmospheric warming. The observation of these changes is one of the major objectives of the international climate monitoring strategy developed by the Global Climate Observing System. Long-term glacier mass balance measurements are furthermore the basis to calibrate and validate models simulating future runoff of glacierized catchments. This is essential for Central Asia, which is one of the driest continental regions of the northern hemisphere. In the highly populated regions, water shortage due to decreased glacierization potentially leads to pronounced political instability, drastic ecological changes, and endangered food security. As a consequence of the collapse of the former Soviet Union, however, many valuable glacier monitoring sites in the Tien Shan and Pamirs were abandoned. In recent years, multinational actors have re-established a set of important in-situ measuring sites to continue the invaluable longterm data series. This paper introduces the applied monitoring strategy for selected glaciers in the Kyrgyz and Uzbek Tien Shan and Pamir, highlights the existing and the new measurements on these glaciers and presents an example for how the old and new data can be combined to establish multidecadal mass balance time series. This is crucial for understanding the impact of climate change on glaciers in this region.
Coastal ocean acidification and increasing total alkalinity in the northwestern Mediterranean Sea
Authors: Kapsenberg Lydia , Alliouane Samir , Gazeau Frédéric , Mousseau Laure , Gattuso Jean-Pierre
Published: May 2017

Abstract. Coastal time series of ocean carbonate chemistry are critical for understanding how global anthropogenic change manifests in near-shore ecosystems. Yet, they are few and have low temporal resolution. At the time series station Point B in the northwestern Mediterranean Sea, seawater was sampled weekly from 2007 through 2015, at 1 and 50 m, and analyzed for total dissolved inorganic carbon (CT) and total alkalinity (AT). Parameters of the carbonate system such as pH (pHT, total hydrogen ion scale) were calculated and a deconvolution analysis was performed to identify drivers of change. The rate of surface ocean acidification was −0.0028 ± 0.0003 units pHT yr−1. This rate is larger than previously identified open-ocean trends due to rapid warming that occurred over the study period (0.072 ± 0.022 °C yr−1). The total pHT change over the study period was of similar magnitude as the diel pHT variability at this site. The acidification trend can be attributed to atmospheric carbon dioxide (CO2) forcing (59 %, 2.08 ± 0.01 ppm CO2 yr−1) and warming (41 %). Similar trends were observed at 50 m but rates were generally slower. At 1 m depth, the increase in atmospheric CO2 accounted for approximately 40 % of the observed increase in CT (2.97 ± 0.20 µmol kg−1 yr−1). The remaining increase in CT may have been driven by the same unidentified process that caused an increase in AT (2.08 ± 0.19 µmol kg−1 yr−1). Based on the analysis of monthly trends, synchronous increases in CT and AT were fastest in the spring–summer transition. The driving process of the interannual increase in AT has a seasonal and shallow component, which may indicate riverine or groundwater influence. This study exemplifies the importance of understanding changes in coastal carbonate chemistry through the lens of biogeochemical cycling at the land–sea interface. This is the first coastal acidification time series providing multiyear data at high temporal resolution. The data confirm rapid warming in the Mediterranean Sea and demonstrate coastal acidification with a synchronous increase in total alkalinity.
Olive baboons' (Papio anubis) response towards crowned eagles (Stephanoaetus coronatus) at Lake Manyara National Park
Authors: Paciência Filipa M. D. , Baluya Deusdedith , Mbaryo Pay , Knauf Sascha , Zinner Dietmar
Published: May 2017

Abstract. In this paper we report on two encounters between olive baboons (Papio anubis) and crowned eagles (Stephanoaetus coronatus) at Lake Manyara National Park, northern Tanzania. During these encounters olive baboons responded by giving alarm calls and all infants and juveniles rushed down from trees seeking cover under bushes or close proximity to adult conspecifics. In one of the events, alarm calls from banded mongoose (Mungos mungo) and rock hyraxes (Procavia capensis) most likely triggered alarm calling of vervet monkeys (Chlorocebus pygerythrus) which in turn prompted baboons to respond with alarm calls as well. In both observations, adult male baboons took the lead in climbing trees, threatening the eagle (staring, yawning, ground slapping) and chasing it away. The reaction of the baboons suggests that crowned eagles pose a threat at least for juvenile baboons at Lake Manyara National Park.
Workers of the World Have Nothing, and Everything, to Lose
Authors: Luce Stephanie
Published: May 2017

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