bluuebunny/crossref_metadata_2025 huggingface dataset:
Fault Localization of Power-Ground Short via Signal Injection and Oscilloscope Technique
Authors: Nguyen Binh
Published: December 2020

For those attempting fault isolation on computer motherboard power-ground short issues, the optimal technique should utilize existing test equipment available in the debug facility, requiring no specialty equipment as well as needing a minimum of training to use effectively. The test apparatus should be both easy to set up and easy to use. This article describes the signal injection and oscilloscope technique which meets the above requirements. The signal injection and oscilloscope technique is based on the application of Ohm's law in a short-circuit condition. Two experiments were conducted to prove the effectiveness of these techniques. Both experiments simulate a short-circuit condition on the VCC3 power rail of a good working PC motherboard and then apply the signal injection and oscilloscope technique to localize the short. The technique described is a simple, low cost and non-destructive method that helps to find the location of the power-ground short quickly and effectively.
High Volume Scan FA for Yield Enhancement at the 90nm Node
Authors: Ross Ryan , Garteiz Gil
Published: December 2020

Driving yield improvement activities to decrease baseline logic / scan yield fallout is often perceived as a challenging or complex activity. Much of this perception is based on yield or device teams historical interactions with the FA teams on these types of requests. This paper will present our methodology for generating a relatively high volume of scan FA results in a short time frame. This type of high volume scan FA enables real time FA paretos of what is causing scan / logic yield loss.
DRAM Static Refresh Weak Cell Characterization and Structure Analysis
Authors: Lee Sung Ho , Yoo Yong Ho , Park Tae Jung , Choi Jin , Ahn Ju Hyeon , Kim Seok Sik , Kang Chang-Jin , Nam Seok Woo , Lee Joo Young , Jin Gyo Young
Published: December 2020

Data retention characteristic is one of the most critical issues in low power DRAMs because it determines idle currents of self-refresh operation. Compared to normal healthy cells, a few ppm orders of cells in a tail distribution have much higher leakage currents. The origin of the leaky cells (so called weak cells or tail cells) has been quite arguable for the past decades [1, 2], but it should be scrutinized in order to achieve long data retention time. In this paper, we have thoroughly investigated the behavior of the retention weak cells using a newly generated combination program and TEM analysis so as to discover and explain their origins
Flash Single Bit Cycling Fail Due to Charge Accumulation from Incorrect Lateral Drain Junction Formation
Authors: Harber Keith , Subramanian Sam , Chrastecky Tony , Ly Khiem , Mu Fuchen
Published: December 2020

This paper outlines the analysis of a flash single bit failure caused by bitcell degradation over write/erase cycling. With no physical anomaly present at the failing single bit, Atomic Force Probing (AFP) characterization was utilized in conjunction with thermal response characterization to direct analysis towards a particular non-visible defect as the root cause. Existence of the hypothesized non-visible defect causing the single bit cycling failure was proven through Transmission Electron Microscopy (TEM) stained sample analysis, which highlighted an anomalous lateral drain junction formation at the single bit that caused the cycling failure.
Challenges and Benefits of Product-Like SRAM in Technology Development
Authors: Beaudoin Felix , Lucarini Stephen , Towler Fred , Wu Stephen , Song Zhigang , Albert David , Safran Laura , Sylvestri John , Karve Gauri , Yu Xiaojun , Kachir Eli , Jungmann Noam
Published: December 2020

For SRAMs with high logic complexity, hard defects, design debug, and soft defects have to be tackled all at once early on in the technology development while innovative integration schemes in front-end of the line are being validated. This paper presents a case study of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle of the line, and the front-end of the line. These process changes were successfully verified by demonstrating a significant reduction of the Vmax and Vmin nest array block fallout, thus allowing the broader development team to continue improving random defectivity.
A Novel ONO Inspection Methodology for DRAM Deep Trench Structure
Authors: Chen Kuo Hsiung , Chang Chih-Chung , Lin Jian Chan
Published: December 2020

The oxide-nitride-oxide (ONO) is one of the critical layers in the deep trench (DT) capacitor of the modern DRAM structure. This paper highlights a ONO inspection methodology, which used the silicon wet etching to enhance the ONO leakage point. First, a hole was milled nearby the leakage ONO, which was localized by using focused ion beam (FIB). Then, silicon was removed by an etching solution from the opening. When the poly of DT is etched through the ONO weak point, the leakage site will be enhanced. With the silicon wet etching enhancement, the ONO leakage point is easy to be observed by X-S FIB inspection. The real ONO leakage point is useful information for the root cause finding and the process improvement.
A Study of SRAM Device Soft Failures Caused by Contact Volcano Defects Using Nanoprobing Analysis
Authors: Shu Yu Hsiang , Huang Vincent , Chao Chia Hsing
Published: December 2020

Using nanoprobing techniques to accomplish transistor parametric data has been reported as a method of failure analysis in nanometer scale defect. In this paper, we focus on how to identify the influence of Contact high resistance on device soft failures using nanoprobing analysis, and showing that the equivalent mathematical models could be used to describe the corresponding electrical data in a device with Contact high resistance issue. A case study was presented to verify that Contact volcano defect caused Contact high resistance issue, and this issue can be identified via physical failure analysis (PFA) method (e.g. Transmission Electron Microscope and Focus Ion Beam techniques) and nanoprobing analysis method. Finally, we would explain the physical root cause of Contact volcano issue.
Nanoelectronic Analog Circuit PFA – The Return of Circuit Level Probing
Authors: Albert D. E. , Fischer L. , Beck S.
Published: December 2020

Circuit level probing is testing, measuring, or characterizing the operation of an electronic circuit. It reveals the true operation of a circuit, and takes the next step beyond electrical engineering design and circuit simulation. This paper presents the return of circuit level probing in nanoelectronics by means of SEM based nanoprobing. It provides information on the process of characterizing resistance matching, diode matching, Op Amp offset matching, and mirrored current. Circuit level probing, using a SEM based nanoprober, identified the problem to be poor matching between the current mirror devices in the circuit. A family of curves device characterization was obtained from the circuit level probing. Discrete devices testing showed good correlation back to the circuit level data. The device mismatch was determined to be associated with the "as processed" built-in potential of the devices, with no abnormal influence from either the gate or drain electrical fields.
Characterization and TCAD Simulation of 90nm Technology PMOS Transistor under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement
Authors: Llido R. , Sarafianos A. , Gagliano O. , Serradeil V. , Goubier V. , Lisart M. , Haller G. , Pouget V. , Lewis D. , Dutertre J.M. , Tria A.
Published: December 2020

This study responds to our need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus it is mandatory to understand the behavior of elementary devices under laser stimulation, in order to model and anticipate the behavior of more complex circuits. This paper characterizes and analyses effects induced by a static photoelectric laser on a 90 nm technology PMOS transistor. Comparisons between currents induced in short or long channel transistors for both ON and OFF states are made. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses. These physical simulations give a physical insight of carriers generation and charge transport phenomena in the devices.
Differential Polarization Imaging and Probing [DPIP]: Seeing and Probing the “Invisible”
Authors: Niu Baohua , von Haartman Martin , Pardy Patrick , Sacks Mitch
Published: December 2020

A novel method for obtaining diffraction limited high resolution images, and increased signal to noise ratio (SnR), for imaging and probing silicon based complementary metal oxide semiconductor field effect transistor (CMOS, and MOSFET) integrated circuits (IC), is presented. The improved imaging is based on the sub wavelength features’ asymmetric layout, which is dictated by the lithography design rules constrain in CMOS IC and their interactions with polarized light. This asymmetry in layout and the inherent stress engineering on the CMOS IC, produce both dichroism and birefringence in silicon (Si). An elegant design enabled us to obtain two images with orthogonal polarization detection to take advantages of the dichroism and birefringence in Si based CMOS IC. Differential Polarization Image (DPI) is obtained by subtracting the two orthogonal polarization resolved images. On infrared emission microscopes (IREM), DPI in optical imaging mode and DPI plus probing [DPIP] in emission mode, showed 2X or more in terms of optical resolution (imaging mode) and 2X or more SnR (emission-probing mode) improvements. Striking images in probing mode, revealing previously “invisible” emission, were demonstrated.
Routine Backside FIB Milling With EXpressLO™
Authors: Giannuzzi Lucille A.
Published: December 2020

A new method and grid design is described for implementation of ex-situ lift-out of FIB prepared specimens. This technique negates all prior disadvantages to ex-situ liftout and provides a method for higher throughput and rethinning of ex-situ specimens. In particular, this method allows for easy, fast, and routine manipulation for subsequent backside FIB milling and analysis.
Metallographic Investigation on Solder Creep Phenomenon
Authors: Gustilo Paul Angelo D. , Fernandez Joyce Lyn G.
Published: December 2020

Solder bulging is detected on the exposed paddle of Device A after burn-in causing the affected units to fail the coplanarity criteria. The affected units show up at random burn-in board socket locations and occur with varying frequency. Potential causes are plotted through an Ishikawa diagram which reveal fusion and creep as the potential mechanisms behind the solder bulging phenomenon. This paper seeks to determine the mechanism behind the solder bulging phenomenon via a 2-step metallographic investigation through (i) material deformation characterization and (ii) deformation mechanism simulation. In material deformation characterization, visual inspection on affected units show that the solder bulge is generally circular and is located on the center of the exposed paddle. Moreover, SEM/EDX analysis reveal that the solder bulge is not caused by a foreign contaminant or a compositional anomaly in the solder plating. On the other hand, deformation mechanism simulation involves the metallographic comparison between controlled simulations of fusion and creep versus the actual unit with solder bulge. Metallographic inspection reveal that the grain size and grain shape of the solder bulge possess the characteristics of creep phenomenon. Additionally, investigation on the burn-in (BI) process conditions also supports creep over fusion as the mechanism behind the solder bulging phenomenon. The static stress induced by the socket on the package at elevated temperature caused the solder plating to creep towards the free area which is the hole on the bottom of the socket.
Challenges for Physical Failure Analysis of 3D-Integrated Devices—Sample Preparation and Analysis to Support Process Development of TSVs
Authors: Meyer Andreas , Grimm Gabriele , Hecker Michael , Weisheit Martin , Langer Eckhard
Published: December 2020

The trend to higher integration of electronic devices to include more functions into ever-smaller devices, such as mobile phones or tablet computers, drives the development of novel packaging technologies for semiconductor chips. One of the approaches to reduce packaging size and power consumption is to stack multiple silicon chips on top of each other. An alternative approach is the utilization of through-silicon vias (TSV) to connect multiple chips to each other. This paper provides a set of sample preparation and analysis techniques for the comprehensive analysis of TSVs in support of technology development and qualification. The toolset ranges from simple cross-section imaging of cleaved samples to the evaluation of wafer planarity at the end of the TSV process flow and to the more specific analysis of the stress field around TSVs. The results provide valuable insights for designers, integration engineers, and process engineers.
The Unique and Completed Characteristics of Device Behaviors in the Nanoprobing Analysis and Application for Missing LDD
Authors: Lai LiLung
Published: December 2020

The Nanoprobing technique has become a popular tool for the Failure Analysis. This paper tries to establish the fundamental postulates for the following improvement of the technique. After description of the postulates, the application to missing or blocked LDD is claimed. Meanwhile, the following strategy of post-Nanoprobing is discussed by the case of missing LDD and for general conditions.
Sub-mohms Resistance Characterization of Conductive Interfaces on Automotive Power MOSFET to Determine the Origin of On-Resistance Drift
Authors: Weber Yann , Rousseille Philippe
Published: December 2020

This paper presents an original approach allowing determining the failure mechanism at the origin of onresistance (RDSon) drift on vertical Power N-MOSFETs, dedicated to automotive application. The studied devices failed after Temperature Cycling (TC) qualification stress. The originality of that paper concerns the necessity to use strategic Failure Analysis (FA) approaches to determine the origin of the defect, without any localization possibilities. In that perspective, an original microprobing sub-mohms resistance electrical characterization of the different conductive interfaces was performed in order to determine the failing layer. Then, physical destructive FA techniques (backside SAM, leadframe peel-off and mechanical cross-section) were combined in order to finely characterize the defect. As a result, problems in die attach layer were highlighted, confirming the electrical probing characterization. At last, root cause of this abnormal die attach will be discuss through review of assembly process parameters. These results allowed implementing corrections and improving product stress resistance.
UV-Raman Microscopy on the Analysis of Ultra-Low-k Dielectric Materials on Patterned Wafers
Authors: Huang Maggie Y.M. , Ng Tsu Hau , Tan Hao , Dawood Mohammed Khalid Bin , Tan Pik Kee , Lam Jeffrey C.K. , Mai Zhihong
Published: December 2020

With the shrinkage of the IC device dimensions, Cu and ultra-low-k dielectric were introduced into IC devices to reduce RC delay. Ultra-low-k dielectrics generally suffer more damage than silicon oxide dielectric during process integration and subsequently cause reliability degradation. Therefore, ultra-low-k damage characterization on Cu damascene structures is of great importance to understand the damage mechanisms. This paper describes the application of UV-Raman microscopy with enhanced spatial resolution and signal sensitivity for characterizing ultra-low-k dielectric in the three-dimension structure of Cu metallization with nanometer feature size. It shows UV-Raman technique has an advantage in analyzing ultra-low-k layer on patterned wafer and extracting ultra-low-k signals from Cu/ultra-low-k mixed structure. UV-Raman is also effective to characterize the ultra-low-k degradation for ultra-low-k related reliability analysis by time dependent dielectric breakdown (TDDB) test.
Applying Innovative Techniques for Solving FA Challenges of 3D IC Failures Utilizing Conventional Equipment
Authors: Tan Phoumra , Ng Kenny , Thorne Eric , Pai S.Y. , Hamilton Doug , Nuez Dan
Published: December 2020

With the advent of three-dimensional stacked integrated-circuit (3D IC), the functionality, performance and power of semiconductor devices has been elevated to a new level. At the same time, the analytical techniques used in the evaluation of 3D IC must also advance in capability. Some new methodologies, based on FPGA products, have been developed to analyze 3D IC failures, all using conventional FA equipment and innovative techniques to achieve a short turn-around time and high success rate. A few case studies will be presented to show the effectiveness of the methodologies.
Applications and Techniques for 2D Picosecond Imaging for Circuit Analysis
Authors: Stellari Franco , Song Peilin , Weger Alan J.
Published: December 2020

In this paper, we present the latest results obtained with a 2D Picosecond Imaging Circuit Analysis (PICA) camera with enhanced Near InfraRed (NIR) sensitivity [1] for taking 2D Time Resolved Emission (TRE). We will discuss key applications where the time-resolved imaging capability is very effective in reducing the debug time and improving the interpretation of the failure signatures of several VLSI chips. Besides conventional chip diagnostics, specific focus will be dedicated to new areas of applications, such as security and reverse engineering [2]. We will also discuss spectral analysis and other techniques that can be used to extract valuable information from the PICA dataset.
Localization of Weak Points in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging
Authors: Jatzkowski Jörg , Simon-Najasek Michél , Altmann Frank
Published: December 2020

A novel approach for the localization of weak points in thin transistor and capacitor oxides before electrical breakdown will be presented in this paper. The proposed approach utilizes Electron Beam Absorbed Current (EBAC) imaging based on Scanning Electron Microscopy (SEM). This technique uses the generation of additional charge carriers within the semiconductor substrate level by scanning with a focused electron beam. Over a thin transistor or capacitor oxide layer inside the interaction volume of the electron beam an increased tunnel current is visualized by EBAC and shows areas with different current intensities indicating weak points. These soft defect areas are investigated in comparison to references which were analyzed by using cross sectioning in a dual beam FIB/SEM system followed by a high resolution Transmission Electron Microscopy (TEM) investigation. The feasibility of this new technique is demonstrated on a defective transistor gate oxide test structure.
Fault Isolation Using Electrically-Enhanced LADA (EeLADA)
Authors: Goh S.H. , Yeoh B.L. , You G.F. , Hao H. , Sio W.L. , Lam J. , Chua C.M.
Published: December 2020

Pulsed-LADA is found to play an important role in the advancement of next-generation LADA and it is reported that tens of μs pulses with 10 kHz frequency is sufficient to observe enhancements in carrier injection. Electrically-enhanced LADA (EeLADA), based on pulsed-LADA, is introduced as a new fault localization method capable to overcome current limitation of Laser Assisted Device Alteration (LADA) application on soft failure and extends it to hard failure debug. We present the EeLADA methodology and experimental data to demonstrate its feasibility.
Quantitative SiGe TEM Elemental Analysis in FinFET Test Structures
Authors: Demarest James , Bruley John
Published: December 2020

As semiconductor device scaling continues to reduce the structure size, device geometries are also changing to three dimensional structures such as finFETs, and the materials which compose the devices are also evolving to obtain additional device performance gains. The material change studied in this paper is the introduction of silicon germanium into the electrically active region of a finFET test structure. The paper demonstrates a quantitative energy dispersive X-ray spectroscopy transmission electron microscopy (TEM) technique through the use of blanket film calibration samples of known concentration characterized by X-ray diffraction. The technique is used to identify a test structure issue which could only be diagnosed with a technique having nanometer spatial resolution and atomic percent sensitivity. The results of the test structure analysis are independently verified by the complementary TEM electron energy loss spectroscopy technique.
Poly Undercut Induced Device Asymmetric Failure
Authors: Wang Wen Hui , Lin Mei Chuang , Huang Shiuan Wen
Published: December 2020

Device asymmetric current is a common soft failure type in real nano-probing cases. Generally speaking, it is not easy to find out the root cause. LDD shadowing, Poly depletion are well known failure mechanisms causing asymmetric current due to an equivalent high resistance at defect location. Based on the defect serious condition, even some hard defect like channel AA pitting will show the similar I-V feature with previous 2 soft fail cases. This paper will introduce another type of asymmetric current feature – poly bottom undercut which I-V curve still keeps ideal linear and saturation area, but the asymmetric current difference is obvious.
Pulse Laser Ablation Techniques for IC Package Substrate Modifications and Validation
Authors: Mulholland Matthew M. , Helmy Ahmed A. , Dao Anthony V.
Published: December 2020

Post silicon validation techniques specifically Focused Ion Beam (FIB) circuit editing and Failure Analysis (FA) require sample preparation on Integrated Circuits (IC). Although these preparation techniques are typically done globally across the encapsulated and silicon packaging materials, in some scenarios with tight mechanical or thermal boundary conditions, only a local approach can be attempted for the analysis. This local approach to access the underlying features, such as circuits, solder bumps, and electrical traces can be divided into two modification approaches. The back side approach is typically done for die level analysis by de-processing through encapsulated mold compound and silicon gaining access to the silicon transistor level. On the other hand, the front side approach is typically used for package level analysis by de-processing the ball grid array (BGA) and package substrate layers. Both of these local de-processing approaches can be done by using the conventional Laser Chemical Etching (LCE) platforms. The focus of this paper will be to investigate a front side modification approach to provide substrate material removal solutions. Process details and techniques will be discussed to gain access to metal signals for further failure analysis and debug. A pulse laser will be used at various processing stages to de-process IC package substrate materials.
Locating Gate Oxide Failures Using KOH
Authors: Sarnecki Lori L.
Published: December 2020

This paper presents two new methods using potassium hydroxide (KOH) as a wet etch technique to successfully stop on gate oxide and find the submicron gate oxide failures that correspond to failure response sites. Applications of this new technique to submicron gate oxide failures on both planar and deep trench MOSFET devices are reported in this paper.
Analysis Approach on Copper Solderable Front Side Discoloration Issue
Authors: Sing Lim Saw , Ping Lim Siew
Published: December 2020

This paper outlines the physical analysis approach to investigate droplet-like copper discoloration defects. These defects are proven to be caused by differences in copper oxidation based on quantification results of the CuO and Cu2O chemical states using X-ray photoelectron spectroscopy (XPS) analysis.
Enhanced Static Fault Localization Methodology on Resistive Open Defects Using Photon Emission Microscopy and Layout Defect Prediction
Authors: Quah A.C.T. , Nagalingam D. , Ang G.B. , Chen C.Q. , Ma H.H. , Susanto E. , Moon S. , Neo S.P. , Lam J.C. , Mai Z.H.
Published: December 2020

In this paper, the effects of an open defect resulting in floating gate on combinational logic gate structures are studied. From this study, a novel method is derived to predict and narrow down the potential open defect location from a long failure path that is driving multiple branches of input nodes, into a much smaller segment without EBAC analysis. This method is applied with great success to localize open defects on actual low yield cases from advanced technology nodes with significant reduction in FA cycle time.
A Database for Counterfeit Electronics and Automatic Defect Detection Based on Image Processing and Machine Learning
Authors: Asadizanjani Navid , Gattigowda Sachin , Tehranipoor Mark , Forte Domenic , Dunn Nathan
Published: December 2020

Counterfeiting is an increasing concern for businesses and governments as greater numbers of counterfeit integrated circuits (IC) infiltrate the global market. There is an ongoing effort in experimental and national labs inside the United States to detect and prevent such counterfeits in the most efficient time period. However, there is still a missing piece to automatically detect and properly keep record of detected counterfeit ICs. Here, we introduce a web application database that allows users to share previous examples of counterfeits through an online database and to obtain statistics regarding the prevalence of known defects. We also investigate automated techniques based on image processing and machine learning to detect different physical defects and to determine whether or not an IC is counterfeit.
Impact of Carbon on Threshold Voltage Shift in MOSFET Studied by 3D Atom Probe Tomography
Authors: Kim Ju-Heon , Ok Euna , Sim Hyunmi , Na Dongkeun , Song Ho Seok , kim Dae Hyun , Cho Yong-Beom , Won Seok-Jun , Park Tae-Soo
Published: December 2020

In this paper, impact of carbon on threshold voltage in MOSFET-based device is studied by 3D-atom probe tomography (APT). Carbon is one of most difficult contaminants incorporated from fab-environment to be detected by typical analytical techniques such as TEM-EDS or SIMS. Here, we successfully demonstrated the detection of carbon segregated at gate oxide/Si substrate interface using 3D-APT with single-atom sensitivity and sub-nanometer spatial resolution. It was found that the carbon contaminants have significant effect on the threshold voltage shift (ΔVth), in which ΔVth increases slightly with increasing carbon concentration. The deterioration of device performance is explained by means of which the positively ionized carbons at the interface acting as additional positive charges affecting the inversion to n-channel.
Transmission Electron Microscopy Nano Beam Diffraction Sensitivity Study in Focused Ion Beam Prepared Semiconductor Test Structures
Authors: Demarest James
Published: December 2020

In this paper, a sample was made on an advanced technology node finFET test structure and analyzed in a 200kV TEM equipped with a 4k camera and commercially available strain analysis software using a sub 5nm parallel probe. It was observed that doubling the step size of the data acquisition from 5nm per step to 2.5nm per step with a 4k image resolution changed the sensitivity of the data by about 4%. However, increasing the number of pixels of each diffraction pattern from 2k to 4k and removing the focused ion beam prepared sample surface damage both showed greater than 10% improvements in nano beam electron diffraction (NBD) sensitivity greater than 10%. As a result, it is possible to obtain greater sensitivity of the NBD technique by employing these changes in response to the evolving characterization needs.
Practical Dynamic Laser Stimulation Techniques for Complex Analog and Mixed Signal IC Failure Analysis
Authors: Javier Jeffrey , Hurdle Taylor , Fernandez Sammie , Van Vliet Kari
Published: December 2020

The increasing electrical design and physical complexity of semiconductor devices, especially in the analog and mixed signal (AMS) applications, directly influences the development and evolution of fault isolation techniques. One of these techniques is Dynamic Laser Stimulation (DLS) which is widely used in the industry for effective identification of subtle failure mechanisms and soft defects especially for AC signal-related failures [1, 2]. However, for analysis of some complex AMS IC failure modes, the tool’s standard setup may not always be compatible with the biasing requirements of the device. For example, the setup would typically require expensive and intricate test systems (i.e. Automatic test equipment (ATE), SCAN tester, etc.) to be interfaced with the DLS tool for the analysis to be feasible and successful [3, 4]. This paper presents simple and practical techniques to implement DLS without the need for an expensive test support system. These techniques were applied in three different FA cases involving AMS ICs with complex and temperature-dependent failure modes. The results of subsequent analysis indicated success in isolating the exact defect sites.
Challenges in Failure Analysis of 3D Bonded Wafers
Authors: Pichumani Pradip Sairam , Atanasova Tanya , Baumann Frieder , Hatzistergos Michael , Mody Jay , Molis Steven , Pozder Scott , Madan Anita
Published: December 2020

This paper discusses the Failure Analysis methodology used to characterize 3D bonded wafers during the different stages of optimization of the bonding process. A combination of different state-of-the-art techniques were employed to characterize the 3D patterned and unpatterned bonded wafers. These include Confocal Scanning Acoustic Microscopy (CSAM) to determine the existence of voids, Atomic Force Microscopy (AFM) to determine the roughness of the films on the wafers, and the Double Cantilever Beam Test to determine the interfacial strength. Focused Ion Beam (FIB) was used to determine the alignment offset in the patterns. The interface was characterized by Auger Spectroscopy and the precession electron nanobeam diffraction analysis to understand the Cu grain boundary formation.
Correlation of Thermal Rise Time to Sample Depth in Multi-Die Stacked Devices
Authors: Shi M. , Street A.G. , Dai Y.F.
Published: December 2020

Dynamic Digital Modulation, an adaptation of Lock-In Thermography, has been shown to be a useful technique to establish the relative Z-depth of thermal sources in integrated circuits. In order to determine the specific depth of a thermal source it is necessary to correlate known depths to measured thermal rise time. In this work, multi-die stacked memory devices are used as calibration sources to correlate a thermal source at individual die to the measured thermal rise time.
Creative Approach Using Lock-in Thermography in Fault Localization of ASIC Devices
Authors: Sabate Andrew , Estores Rommel
Published: December 2020

The advent of lock-in thermal imaging application on semiconductor failure analysis added capability to localize failures through thermal activity (emission) of the die. When coupled with creative electrical set-up and material preparations, lock-in thermography (LIT) [1, 2] application gives more possibility in exploring the failure of the device using low power settings. This gives higher probability of preserving the defect which leads to a more conclusive root cause determination.
Novel Approach of Improving Secondary Electron Detector in FIB System
Authors: Wang Steve , McGinn Jim , Tvarozek Peter , Weiss Amir
Published: December 2020

Secondary electron detector (SED) plays a vital role in a focused ion beam (FIB) system. A successful circuit edit requires a good effective detector. Novel approach is presented in this paper to improve the performance of such a detector, making circuit altering for the most advanced integrated circuit (IC) possible.
Plan View Specimen Preparation Via Vacuum Assisted Ex Situ Lift Out
Authors: Lowery Lisa Marie , Lu Ping , Kotula Paul G. , Michael Joseph R. , Giannuzzi Lucille A.
Published: December 2020

Vacuum assisted ex situ lift out may be used for fast, easy, and reproducible plan view specimen preparation. Manipulation of samples via beveled hollow glass probes whose plane of interest is parallel to slotted grids allow for conventional FIB milling for S/TEM analysis.
Nanopyramid: An Optical Scrambler Against Backside Probing Attacks
Authors: Shen Haoting , Asadizanjani Navid , Tehranipoor Mark , Forte Domenic
Published: December 2020

Optical probing from the backside of an integrated circuit (IC) is a powerful failure analysis technique but raises serious security concerns when in the hands of attackers. For instance, attacks using laser voltage probing (LVP) allow direct reading of sensitive information being stored and/or processed in the IC. Although a few sensor-based countermeasures against backside optical probing attacks have been proposed, the overheads (fabrication cost and/or area) are considerable. In this paper, we introduce nanopyramid structures that mitigate optical probing attacks by scrambling the measurements reflected by a laser pulse. Nanopyramid structure is applied to selected areas inside an IC that requires protection against optical probing attacks. The fabrication of nanopyramids is CMOS compatible and well established for photovoltaic applications. We design the nanopyramid structure in ICs, develop the LVP attacking model, and perform optical simulations to analyze the impact of nanopyramids on LVP. According to the simulation results, the nanopyramid can disturb the optical measurements enough to make LVP attacks practically infeasible. In addition, our nanopyramid countermeasure has no area overheads and works in a passive mode without consuming any energy.
Uniform Mechanical Deprocessing of Stacked Memory Modules
Authors: Liechty Gary , Richardson Chris
Published: December 2020

With the introduction of CNC-based milling systems, it became possible to more uniformly deconstruct silicon devices for through-silicon electrical fault isolation techniques that feature either a convex or concave geometry or by thermally relaxing the device. This paper presents a novel methodology for uniform mechanical deprocessing of stacked memory modules using a CNC milling system. The PCB (FR4) substrate has been identified as the primary mechanism influencing both the profile of the device and relaxation that occurs during device deconstruction. Examples showing this effect are provided on both pre- and post-processed devices where a difference in symmetry can be observed. Utilizing this new strategy, it is possible to restore a more symmetrical profile that is easier to process with a CNC milling machine.
Variable Angle TEM Grid Holder for Advanced TEM Lamellae Preparation
Authors: Hrnčíř Tomáš , Šikula Marek , Doleže Pavel , Savoia Claudio A. G.
Published: December 2020

Multipurpose sample holder for advanced Transmission Electron Microscopy (TEM) sample preparation which reduces cost of the tool and most importantly simplifies the workflow is introduced. Following the current demand for user-friendly interface, semi-automated approach is aimed to be build up. Abilities to prepare advanced TEM lamellae in various geometries without rotary nanomanipulator and using various end-point detection signals are perceived as biggest advantages of this design.
Uveitis Among Children Living with HIV / AIDS in Kinshasa, RD Congo: A Case Series
Authors: Lusambo Nadine Nsiangani , Lusambo Nadine Nsiangani , Kaimbo Dieudonné Kaimbo Wa
Published: December 2020

Purpose: To report the clinical features of a series of children living with HIV / AIDS (CLWHA) with
uveitis.
Methods: This was a case series of CLWHA and who had a diagnosis of uveitis examined from November
2010 to April 2011 in five sanitary structures in Kinshasa. For each child, anamnestic elements were
collected. Each child underwent an ophthalmological examination including visual acuity measurement, slit
lamp examination and fundus examination after dilation.
Results: 15 CLWAH presented with uveitis out of a series of 100 CLWHA examined. Fourteen of the
children with uveitis were already on treatment and had normal immune status, the only child who had not
yet started treatment had a severe immune deficiency. Retinal vasculitis was the most common disorder in
8 children. It was asymptomatic and mainly concerned the veins on the peripheral retina. Four children
presented with chorioretinal scars of unknown etiology. HIV-related microangiopathy was found in 2
children. Unilateral anterior uveitis was the only symptomatic involvement, found in the child who were
not on treatment.
Conclusion: Uveitis is common in African CLWHA. Retinal vasculitis of unknown etiology appears to be
the most common clinical manifestation in this population. Antiretroviral therapy seems to decrease the
frequency of sight-threatening conditions.
EL IDEARIO CONSTITUCIONAL DE IGUALDAD Y LA DEFENSA DE LOS DERECHOS HUMANOS: LA CUESTIÓN DE LA HOMOSEXUALIDAD Y LA NO DISCRIMINACIÓN EN BRASIL
Authors: Verbicaro Soares Douglas
Published: December 2020

La investigación tiene como objetivo explicitar el ideario constitucional sobre la defensa de los Derechos Humanos en la sociedad brasileña, en especial sobre las personas homosexuales y la lucha contra la discriminación en Brasil. Por lo tanto, se ha realizado una investigación basada en fuentes bibliográficas que retratan la condena a la homosexualidad en el país. Para el estudio se ha empleado una metodología deductiva multidisciplinar, con relación al derecho, la historia, la sociología etcétera. Como indagaciones el estudio buscó algunas respuestas: ¿Qué establece la normativa brasileña sobre la no discriminación? ¿Cómo es plasmada la igualdad en la Carta Magna? La investigación concluye manifestando ideales de prejuicios y discriminación a lo largo de los tiempos para las personas homosexuales en el país.
Analisis Minat Belajar Mahasiswa FKIP Universitas Papua pada Pembelajaran Online
Authors: Manopo Cendy Chaterina , Widyaningsih Sri Wahyu , Sebayang Sri Rosepda Br.
Published: December 2020

Penelitian ini bertujuan untuk menganalisis minat belajar mahasiswa FKIP Universitas Papua pada pembelajaran online. Metode penelitian yang digunakan adalah metode survey dengan menggunakan angket. Teknik pengambilan sampel yang digunakan adalah purposive sampling, dengan sampel 100 mahasiswa dari seluruh program studi yang ada di FKIP Universitas Papua. Instrumen yang digunakan dalam penelitian ini adalah angket minat belajar mahasiswa yang terdiri dari 15 pernyataan. Hasil analisis menunjukkan bahwa tingkat minat belajar mahasiswa FKIP Universitas Papua masuk dalam tiga kategori. Pada indikator rasa senang didapatkan hasil minat belajar belajar sangat tinggi sebanyak 23%, kategori minat belajar tinggi sebanyak 56%, dan kategori minat belajar sedang sebanyak 19%, dan kategori rendah sebanyak 2%. Pada indikator rasa tertarik didapatkan hasil minat belajar belajar sangat tinggi sebanyak 22%, kategori minat belajar tinggi sebanyak 64%, kategori minat belajar sedang sebanyak 13%, dan kategori rendah sebanyak 1%. Pada indikator rasa perhatian didapatkan hasil minat belajar belajar sangat tinggi sebanyak 8%, kategori minat belajar tinggi sebanyak 61%, kategori minat belajar sedang sebanyak 29%, dan kategori rendah sebanyak 2%. Minat belajar yang paling terlihat adalah minat belajar dengan indikator rasa tertarik yaitu adanya rasa tertarik untuk menyelesaikan soal-soal yang diberikan selama pembelajaran online.
Land management under protective forest plantations at the local level: decentralization models
Authors:   National University of Life and Environmental Sciences of Ukraine, Dorosh O. , Fomenko V. ,   Odessa State Agrarian University, Hunko L. ,   National University of Life and Environmental Sciences of Ukraine, Saliuta V. ,   Institute of Agroecology and Nature Management of NAAS Ukraine
Published: December 2020

The state of field protective afforestation in Ukraine has been studied and it has been found that the indifferent attitude of the state to field protective forest belts for many years has led to a ecological crisis (we have about 15 million hectares of degraded soils and estimated losses of 33-35 billion hryvnia annually), which is also the result of the long absence of the owner of these lands. Characterizing the problems associated with the use of forest plantations in terms of the interests of management and economic entities, it was found that currently the most influential entities are the state, the State Forestry Agency, united territorial communities and people whose interests compete with each other. Based on studies of the evolution of land ownership under protective forest belts, taking into account the decentralization processes taking place in the country and taking into account the provisions of the Laws of Ukraine, models of their management at the local level are proposed. Emphasis is placed on the fact that, regardless of the choice of the owner, preference is given to the creation of a municipal agroforestry reclamation enterprise for the arrangement of protective forest belts.
Scientific and methodological approaches to the development of experimental land management projects for the organization of the territory of state scientific institutions and enterprises for the production of organic products
Authors:   National University of Life and Environmental Sciences of Ukraine, Dorosh O. , Barvinskyi A. ,   Land Management Institute of the National Academy of Sciences of Ukraine, Kolisnyk G. ,   National University of Life and Environmental Sciences of Ukraine, Svyrydova L. ,   National University of Life and Environmental Sciences of Ukraine
Published: December 2020

The expansion of organic production in Ukraine is in line with global trends in the agricultural sector in the direction of greening of agricultural land use, accompanied by reducing the level of anthropogenic pressure on land resources, ensuring high quality crop products and maintaining a clean environment. The only means of creating spatial conditions for the harmonious functioning of organic land use within the territories of state research institutions and enterprises is the appropriate land management mechanism, which is currently lacking. Therefore, it is important to solve this problem by its creation and implementation in the practice of economic entities. The purpose of this study is to improve scientific and methodological approaches to the development of experimental land management projects for the organization of the territory for the production of organic products within the land use of state research institutions and enterprises. For this purpose the following tasks were solved: analysis of the current state of development of relevant land management projects and their legal support, determination of structural features and placement of relevant elements of the organization of the territory for organic crop production, substantiation of ecological and economic optimization of agricultural land structure and crop rotation.
Current Concepts in the Management of Osteoporotic Vertebral Fractures: A Narrative Review
Authors: Jang Hae-Dong , Kim Eung-Ha , Lee Jae Chul , Choi Sung-Woo , Kim Kyungbum , Shin Byung-Joon
Published: December 2020

Vertebral fractures are the most common type of osteoporotic fracture and can increase morbidity and mortality. To date, the guidelines for managing osteoporotic vertebral fractures (OVFs) are limited in quantity and quality, and there is no gold standard treatment for these fractures. Conservative treatment is considered the primary treatment option for OVFs and includes pain relief through shortterm bed rest, analgesics, antiosteoporotic drugs, exercise, and braces. Studies on vertebral augmentation (VA) including vertebroplasty and kyphoplasty have been widely reported, but there is still debate and controversy regarding the effectiveness of VA when compared with conservative treatment, and the routine use of VA for OVF is not supported by current evidence. Although most OVFs heal well, approximately 15%–35% of patients with unstable fractures, chronic intractable back pain, severely collapsed vertebra (leading to neurological deficits and kyphosis), or chronic pseudarthrosis frequently require surgery. Given that there is no single technique for optimizing surgical outcomes in OVFs, tailored surgical techniques are needed. Surgeons need to pay attention to advances in osteoporotic spinal surgery and should be open to novel thoughts and techniques. Prevention and management of osteoporosis is the key element in reducing the risk of subsequent OVFs. Bisphosphonates and teriparatide are mainstay drugs for improving fracture healing in OVF. The effects of bisphosphonates on fracture healing have not been clinically evaluated. The intermittent administration of teriparatide significantly enhanced spinal fusion and fracture healing and reduced mortality risk. Based on the current literature, there is still a lack of standard management strategies for OVF. There is a need for greater efforts through multimodal approaches including conservative treatment, surgery, osteoporosis treatment, and drugs that promote fracture healing to improve the quality of the guidelines.
Learning the Elsewhere of ‘Inner Space’
Authors: Selim Nasima
Published: December 2020

How is access to the Elsewhere facilitated through affective pedagogy in a contemporary Sufi setting in Germany? This article draws analytical lessons from Inayati healing seminars that took place in the summer of 2013. Participants were instructed to feel the Elsewhere of ‘inner space’ in the material/corporeal realities by attuning to breath, sonic resonance, collective movement, and attentive listening. The affective pedagogy of the teacher extended the spatial-temporal coordinates of the Elsewhere (as framed by Mittermaier) to include ‘fleeting affects’ among its unknown elements. These pedagogic tactics entangled religious and secular life-worlds with aesthetic and therapeutic traditions. Learning to feel the unknown affects emanating from the Elsewhere in this setting aimed to provide existential resources to cope with the everyday struggles of post-secular life.
BİR MİM OYUNUNDAN HAREKETLE ÇAĞDAŞ DANS SOLO ESER KOREOGRAFİSİ ETÜT: SÖZSÜZ OYUN I
Authors: DEMİRCAN Seçil
Published: December 2020

Bu çalışma, Samuel Beckett’in özellikle bir dansçı ile çalıştığı Sözsüz Oyun I (Becket, 1993) adlı mim eserinin oyun yapısı ile çağdaş dans solo ilişkisine bakmakta ve eser üretim sürecine dair bilgiler vermektedir. Araştırmanın temeli, Beckett’in oyun, beden ve sahne tavrı ile dansçı bedenine ait hareket deneyiminin ürünü olan bedensel enerji, hareket tekniği, algı ve hafızanın metinle ilişkisi nasıl kurulabilir sorularından hareketle oluşturulmaktadır. Araştırma sürecinde oyun metnine ait mekân, hareket ve uzam unsurlarının dansçı bedenle olan ilişkisi ve beklentileri arasındaki bağlantısı doğaçlama hareket araştırmalarıyla kurulmakta ve yeni çalışma önerilerinde bulunmaktadır. Hareket araştırmalarında dansı biricik ve metnin ihtiyaçları doğrultusunda değerlendirirken, koreografiyi metnin verili kaynakları içinde dönüştürerek uygulamaktadır. Çalışma son olarak müzisyenin tasarladığı ses tasarım kompozisyonu ve hareket kompozisyonel öğelerinin biçimlendirilmesi ile birlikte tamamlanmış, 15 dakika uzunluğunda çağdaş dans solo eseri ‘Etüt: Sözsüz Oyun I (Demircan, 2019)’ üretilmiş ve sahnelenmiştir.