(Invited) Characterization of Semiconductor Crystals Based on Omnidirectional Photoluminescence (ODPL) Spectroscopy
Authors: Kojima Kazunobu , Ichikawa Shuhei , Maida Osamu , Shima Kohei , Chichibu Shigefusa 
Published: July 2022

The performance of optical devices based on nitride semiconductors operating in the ultraviolet and visible wavelength regimes has been remarkably improved. For example, high-efficiency blue InGaN light-emitting diodes (LEDs) with an external quantum efficiency (EQE) of over 80% was achieved [Y. Narukawa, M. Ichikawa1, D. Sanga, M. Sano, and T. Mukai, J. Phys. D: Appl. Phys. 43, 354002 (2010)], and green laser diodes (LDs) was realized [Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama and T. Nakamura, Appl. Phys. Express 2, 082101 (2009)]. Recently, deep-ultraviolet AlGaN LEDs and LDs have also become hot topics. The nitride semiconductors have been actively applied not only to optical applications but also to electronic devices such as high-voltage transistors and high-electron mobility transistors based on their high breakdown voltage and saturation electron velocity. The performance of these optical and electronic devices relies on the crystal growth technology, where quality of GaN freestanding substrate is one of the most important issues.

In recent years, it has become common for the "high-quality" GaN freestanding crystals to have a threading dislocation (TD) density of 106 cm-2 or less. TD density of 106 cm-2 corresponds to an average distance between TDs of 10 μm, which means that the TDs are sparser than 1 μm, the order of the carrier diffusion length. In other words, the TDs are no longer dominant in recombination processes of minority carriers (although this is a rather broad argument). In this case, the recombination processes, especially nonradiative recombination process, are likely to be dominated by point defects and impurities rather than by the sparse TDs.

In fact, a negative correlation between room-temperature (RT) photoluminescence (PL) lifetime for the near-band-edge (NBE) emission and the concentration of VGaVN (a divacancy consisting of Ga and N vacancies) has been pointed out by a combined study of time-resolved PL measurements, positron annihilation spectroscopy, and theoretical calculations [S. F. Chichibu, A. Uedono, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, and S. Ishibashi, J. Appl. Phys. 123, 161413 (2018)]. Since PL lifetime measured at RT indicates nonradiative recombination lifetime when the internal quantum efficiency (IQE) of the crystal is low, this negative correlation means that the lower concentration of VGaVN induces larger intensity of the NBE emission.

Actually, we have observed PL lifetime exceeding 2 ns at RT in a GaN crystal grown by halide vapor phase epitaxy (HVPE) on m-plane GaN grown by the acidic ammonothermal method as a seed crystal [K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu, Appl. Phys. Express 8, 095501 (2015)]. This is an extremely long value for a GaN crystal, which means that the nonradiative recombination lifetime is long, i.e., the IQE of the NBE emission is large. In this case, the validity of the approximation where the PL lifetime at RT is directly read into the nonradiative recombination lifetime becomes an issue.

Therefore, in order to compare the quality of GaN freestanding crystals, it is important to measure the IQE as well as the PL lifetime. The IQE value for the NBE emission in semiconductor crystals is a quantity that represents the balance between radiative and nonradiative recombination processes and is directly related to the concentration of point defects and impurities that form deep levels. Therefore, the IQE can be used as an indicator of not only the energy-saving performance of optical devices but also the performance of GaN crystals as a substrate material in electronic devices.

In this presentation, the characterization of semiconductors with direct bandgap by using omnidirectional photoluminescence (ODPL) spectroscopy, a technique that can determine the IQE from the EQE without the need for model calculations, will be reviewed. Using GaN, ZnO, and metal halide perovskites as examples, specific procedures and applications of IQE determination will be discussed. In particular, the ability to measure large sample crystals or wafers is one of the major features of the ODPL spectroscopy, and it is expected to be combined with mapping measurements of the entire surface of semiconductor wafers and various types of nonlinear and microscopic spectroscopy.