bluuebunny/crossref_metadata_2025 huggingface dataset:
A Study of Electron Loading in the Accelerating Tube of Van de Graaff Generator
Authors: Chu-Chung Hsu , Tōhei Tsutomu , Nakagawa Takemi , Morita Susumu
Published: November 2005

X-ray spectra and energy distribution of electrons accompanying the electron loading in the accelerating tube of Van de Gaaff generator were obtained in the energy region of proton from 2.2– to 4.0 MeV. It was found that most of the loading electrons are accelerated through about 30 to 40 sections of accelerating tube which is consisted of 100 sections. The higher energy component of electrons accelerated up to 70 sections are produced at the accelerating voltage beyond E

p
=3.45 MeV. The intensity of electron increases rapidly with the beam energy.
Preparation of Fine Metal Particles by Means of Evaporation in Helium Gas
Authors: Wada Nobuhiko
Published: November 2005

Fine particles of Mg, Zn, Cd, Al, Fe, Cu and Ag were prepared by means of evaporation in helium gas. Compared with those prepared in argon gas (Japan. J. appl. Phys. 2 (1963) 702), the particle size was much smaller, provided the pressure was the same. To obtain the same size, the pressure of helium had to be about ten times as large as that of argon.
The Crystallographic Orientation Dependence of Snoek-Type Internal Friction Peaks of an Fe-Si Alloy
Authors: Hashizume Hiroo , Sugeno Takesi
Published: November 2005

Snoek-type internal friction peaks of a ternary alloy of iron, silicon and nitrogen were investigated with a special reference to the crystallographic orientation of applied stress. The two abnormal Snoek peaks discovered so far are found to have the same orientation dependence as the normal Snoek peak in alpha iron. From this fact and Nowick & Heller's “selection rule” (A. S. Nowick & W. R. Heller: Advances in Phys. 14 (1965) 101), it is concluded that the defects, jumps of which give rise to the abnormal Snoek peaks, must produce tetragonal or <100> orthorhombic local strain around them. Two possible mechanisms of the abnormal Snoek peaks are proposed on the basis of this symmetry condition of the strain.
Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of Silicon
Authors: Yoshida Masayuki , Saito Ken
Published: November 2005

Behavior of electrically active nickel which acts as an acceptor in silicon is studied. Energy level of 0.41±0.01 eV below the conduction band at about 330°K, which includes the effect of the statistical weight factor, solubility of N

S
°=1026exp
[-(3.1±0.2)/k
T] cm-3 and reciprocal product of time constant of annealing of supersaturated state by dislocation density of 1/τn

d
=1.3×10-2exp
[-(1.4±0.2)/k
T] cm2 sec-1 have been obtained by Hall coefficient and resistivity measurements. It is concluded that the electrically active nickel atoms occupy the substitutional sites and nickel diffuses dissociatively and that the self-diffusion constant of silicon is 30exp
[-(4.5±0.4)/k
T] cm2 sec-1.
Instabilities of MOS Structure
Authors: Miura Yoshio , Matukura Yasuo
Published: November 2005

The surface charge density of MOS structure is strongly affected by the bias and temperature (BT) treatment. Ordinary and “clean” MOS diodes are prepared by using the (100) and (111) planes. The results on the “clean” diodes during the BT treatment at high electric field of both polarities show the presence of an electrochemical reaction. It has an activation energy of 11 kcal/mole concerning the generation and disappearance of oxygen vacancy at the silicon to silicon dioxide interface. On the positive BT treatment for the ordinary MOS diodes, an anomalous behavior during the high field treatment is found. This phenomenon is qualitatively explained by assuming another reaction in addition to the oxygen vacancy mechanism and the fixed charge, Sodium ions are speculated as the impurity ions in the silicon dioxide film of the ordinary diodes.
Infrared Lattice Reflection Spectra of II-VI Compounds
Authors: Manabe Atsushi , Mitsuishi Akiyoshi , Yoshinaga Hiroshi
Published: November 2005

The reflection spectra of cubic ZnS, ZnSe, ZnTe and CdTe, hexagonal CdS, CdSe and ZnS were measured in the spectral region from 20 µm up to about 100 µm. The Reststrahlen bands thus obtained were analysed using Drude dispersion relation and the following values of transverse optical mode frequency (νt) at the zone center were determined: cubic ZnS, 282 cm-1; ZnSe, 207 cm-1; ZnTe, 177 cm-1; hexagonal CdS, 234 cm-1and 241 cm-1for the vibrations parallel and perpendicular to thecaxis respectively; hexagonal CdSe, 167 cm-1for unpolarized radiation; hexagonal ZnS, 274 cm-1for the vibrations of both polarizations. The longitudinal optical mode frequency at the zone center, the Szigeti effective charge and the other dispersion parameters were also obtained. νtwas also obtained from the transmission spectrum of an evaporated thin film and was found to be in good agreement with the value obtained from the reflection analysis.
Collisional Damping of the Whistler Mode in a Dense Plasma
Authors: Watanabe Hiroshige , Sugita Keiichiro , Nagao Shigeo
Published: November 2005

The effect of Coulumb collisions on the transverse wave along an external magnetic field in a fully ionized dense plasma is investigated by means of the Fokker-Planck equation. Expressions for the dispersion relation and the spatial damping constants of the whistler mode are obtained. The spatial damping constants, to first order, are given by κ_i=\frac{2}{3\sqrt{\pi}}·(\frac{k\nu_{c}}{\omega_{c}-\omega})·[1+\frac{7}{5}(\frac{kv_{0}}{\omega-\omega_{c}})^2], κ_e=\frac{14}{15\sqrt{2\pi}}·(\frac{k\nu_{c}}{\omega_{c}-\omega})(\frac{kv_{0}}{\omega-\omega_{c}})^2, where νcis the electron collision frequency,v0is the electron thermal velocity,kis the wave number and ωcis the electron cyclotron frequency. Finally, their applications to the experimental results are briefly discussed.
Rolling Friction of Polymeric Material
Authors: Minato Kikuwo , Takemura Tetuo
Published: November 2005

The coefficients of rolling friction of polymeric materials for a rigid and cylinder are calculated using the generalized Voigt model. Surface deformation owing to rolling sphere or cylinder is assumed as a periodic phenomenon to derive the theoretical correlation between rolling friction and dynamic modulus of material. It is concluded that the coefficient of rolling friction can be calculated from dynamic data, and conversely dynamic data from rolling friction. Temperature and rolling speed dependencies of the coefficient are explained by temperature and dynamic frequency dependencies of material, respectively. Experimental results for several polymers provide quantitative agreements with theoretical results.
Coherence of Light Filtered by Fabry-Perot Etalons
Authors: Morokuma Tadashi
Published: November 2005

The spatial and temporal coherence of the light filtered by Fabry-Perot etalons was experimentally investigated. Fringes of equal inclination are photographically shown as they are closely related to spatial coherence. The visibility of fringes of equal thickness was measured for the several combinations of etalons and light sources, the radiations was measured from low and high pressure mercury lamps at 0.5461 µ. Peaks were found spaced at every 20 mm and 2.3 mm in visibility when the etalons of the same spacings were used. Non-linear variation in the phase angle of fringes associated with the peaks was examined in comparison with that of fringes formed with the 0.5461 µ line of Hg 198.
Fast Linear Gate
Authors: Ryu Norio , Nishi Masato
Published: November 2005

A fast linear gate has been designed and its performance examined for simulated pulses similar to those from a photomultiplier anode. A pair of fast transistors functions as a gate by exchanging their bias voltages with a gating pulse. The amplification of the circuitry is almost linear up to about 11 mA input pulse. This ensures very fast response, good fidelity of pulse shape, low output impedance and a stable gain of around two. A pulse fed through the circuit without gate input is only 1.6% of the input pulse, and the gate pedestal at the output in the absence of input pulse is a transient pulse of less than 10 mV. These characteristics allow the circuit to satisfy the various requirements of nuclear experiments.
Electrolysis and Ion Transport Mechanism in Uranium Dioxide
Authors: Iida Shoji
Published: November 2005

Uranium dioxide was electrolyzed in the temperature range between 20°C and 1000°C. A difference in O/U ratios between anode and cathode sides was observed. Electrical conductivity measurements indicate that at low temperature most of the carriers are electrons, and at high temperature ionic conductivity is observable, the most predominant ionic carrier being oxygen ions. Electrical conductivity is observable, the most predominant ionic carrier being oxygen ions. Electrical conductivity at high temperature is considered to be due to both electrons and ions. The mobilities of uranium ion and oxygen ion were calculated at 1000°C as µ
u
=7.35×10-26 cm2/volt·sec and µ0=2.1×10-5 cm2/volt·sec, respectively. Schottky defects are considered to be the predominant iontransport mechanism from the result of transference number; Schottky defect formation are expected at either low or high temperatures, along with Frenkel defect formation.
Elimination of Phosphor Backscattering Effect in Electron Scintillation Spectrometry
Authors: Oda Nobuo , Suzuki Hirosi
Published: November 2005

Distortions of continuous electron spectra due to the effect of backscattering from phosphors in the scintillation spectrometer have been studied experimentally for different shapes of plastic phosphors and different geometrical source-detector arrangements. Beta ray sources 32P, 204Tl and 45Ca have been used for the test. Spectra obtained with sandwich- and well-type scintillators show the satisfactory spectral shape down to about two-tenth of the maximum energy due to the effective self-elimination of the backscattering effect. In particular the well type is applicable to every source-detector geometries. After making corrections for the effect of instrumental resolution, the values of the maximum energy were obtained with good accuracies. Even with a scintillator of the usual plane shape, the observed spectra show very little distortion, in the case of a well-collimated beam of normal incidence.
An Ultrasonic Study of Some Optical Glasses
Authors: Inamura Takahiro
Published: November 2005

Ultrasonic delay time in typical optical glasses was measured between -20° and 120°C using superposition method at 5 MHz, which assured the precision of 1 in 104. It was found out that the temperature coefficients of delay time of measured glasses lie in the range of ±50 ppm/°C, and shift from negative to positive as SiO2 content decreases. The frequency dependence of acoustic loss was also measured using pulse echo method up to 130 MHz, and was found to be in the range of 0.01∼0.03 dB per unit wavelength.
Transmission Electron Microscope Study of the Structure of High Temperature Beta Phase in Cu-Sn Alloy
Authors: Nishiyama Zenji , Morikawa Hirofumi , Shimizu Ken'ichi
Published: November 2005

The structure of beta-phase in Cu-Sn alloy has been studied by electron diffraction using an electron microscope equipped with a high temperature stage. From the superlattice spots it was confirmed that the beta-phase at the high temperature has a Fe3A1 type superlattice. Its diffraction pattern shows strong diffuse streaks which indicate the existence of low frequency transverse lattice vibrations of polarization perpendicular to <111> directions.
Lüders Bands of KCl Whiskers
Authors: Yoshida Kazuhiko
Published: November 2005

KCl Whiskers (grown in <100> direction) thicker than about 70 µ show logarithmic stress-strain curves, which are caused by the propagation of Lüders bands. The front velocity of a Lüders band is nearly constant for the constant tensile strain rate in spite of the remarkable increase of the flow stress during its propagation. The average strain in a Lüders band increases with its propagation. On the other hand, whiskers thinner than about 70 µ show remarkable serrated yielding phenomena. It is shown that both the logarithmic stress-strain curve and the serrated yielding can be interpreted on the basis of experimental facts and on the cross-slip mechanism which may be caused by the stress field of screw dislocation alignments in Lüders bands.
Preparation and Properties of GaAs-Si Heterojunctions by Solution Growth Method
Authors: Nakano Takao
Published: November 2005

GaAs-Si heterojunctions were fabricated successfully by the travelling solvent method, where liquid gallium was used as the molten zone, Si as the substrate and GaAs as the source material. The thickness of the GaAs layer grown on the Si substrate was 20∼55 µ m for the growth period of 2∼10 hours at 880°C∼830°C. Single-crystallinity was confirmed by etching studies of the cross-sectioned junctions and by Laue backscatter X-ray data.
Some properties of the GaAs-Si heterojunction were examined from the electrical characteristics. The formation of the GaAs-Si heterojunction was also confirmed from the photoelectrical properties.
Operation of a Laser-Pumped Rudy Maser at 77°K
Authors: Saito Fujio
Published: November 2005

Differential equations describing time-dependent behavior of a pulsed laser-pumped maser are derived in the self-consistent formalism using the density matrix equation and the Maxwell equations. Numerical analysis based on the equations shows that the maser action can occur even when the steady state operation looks impossible. Experimental results on a 24 GHz laser-pumped ruby maser are described and compared with the theoretical calculations.
Interferometric Measurements of Absolute Stress-Optical Coefficients in Amorphous Polymers II. “Direct” and “Transverse” Stress-Optical Coefficients in Photoviscoelastic Effects of Polyester Mixture
Authors: Azuma Kensaku , Soezima Yosio
Published: November 2005

By employing a Mach-Zehnder interferometer and an immersion technique, the stress birefringence effects in polyester mixtures of Rigolac 1557 and Rigolac 70F were measured in order to study the fundamental characteristics of the optical anisotropy caused by the stress accompanied by creep tests. The direct measurements of the absolute changes in principal refractive indices are made separately for the components of light polarized parallel and perpendicular to the direction of stress. By varying the proportion of the composition, the sign of the creep component of the “transvers” stress-optical coefficient is reversed from negative to positive in spite of the fact that the sign of the elastic component is negative in all cases. The “direct” stress-optical coefficient has negative sign in both elastic and creep components. It becomes evident that the photoviscoelastic property is essentially different from that due to elastic deformation in some cases even if the “relative” stress birefringence effects are similar to each other.
Dark and Light Pits on (111) Surface of Copper
Authors: Marukawa Kenzaburo
Published: November 2005

Dislocation etch pits formed by chemical etching on (111) surface of copper sometimes appear as two different kinds of pits, dark and light, at the observation by an optical microscope. Possible kinds of dislocations corresponding to these have been investigated. Various observations have shown that dark and light pits formed by a modified Young's etchant correspond to screw and edge dislocations, respectively. On the other hand, those formed by Livingston's etchant correspond to edge dislocations with positive and negative signs, as already shown by Livingston. It has also been shown that pits at screw dislocations formed by the latter etchant have dark appearances. Some suggestions are made about the mechanism to bring about the different kinds of pits.
On the Ferroelectric Domain Wall in Triglycine Sulfate
Authors: Fousek J.
Published: November 2005

Characteristics of the domain wall of ferroelectrics triglycine sulfate (TGS) are calculated by means of Zhirnov's continuum theory. On the basis of an approximate estimation of the correlation energy coefficient κ, the values of the wall thickness δ (10-6 cm in order of magnitude) and of the wall energy density σ (4 to 12 erg/cm2) are obtained. It is shown that, independently of the value of the unknown coefficient κ, the ratio δ/σ equals 3·10-7 cm3/erg for TGS far below the Curie temperature and exceeds by orders of magnitude the value of the same quantity for BaTiO3 or Rochelle salt. The dependence of σ on the wall orientation in the crystal has been studied; it is found that the energy is minimum for a wall oriented along the crystallographic axes a, b, which is in agreement with the experimental observations. The angular wall energy dependence, however, appears to be quantitatively little pronounced.
Current Dependence of Junction Temperature in C-W Operated GaAs Laser Diodes
Authors: Susaki Wataru
Published: November 2005

In a c-w operated laser diode, the junction temperature depends critically upon current because of the generation of heat. Current dependence of the junction temperature in GaAs laser diodes which were mounted on an excellent heat sink examined at the case temperature of 77°K. An appoximate steady-state equation of the heat flow was derived by taking into account of the temperature dependence of the heat conductivity of GaAs in order to explain the experimental result, and a fairly good agreement with the experimental was obtained.
Linear Gate with Stretcher
Authors: Ryu Norio , Nishi Masato
Published: November 2005

A linear gate with stretcher has been designed to stretch a gated fast pulse to a slow pulse of 0.5 µs rise time and long tail which is acceptable to usual pulse height analyzers. Its performance has been examined by use of simulated pulses similar to those from a photomultiplier anode. Although there is a 3% cut off of the dynamic range, the departure from linearity is less than a few percent up to 20 mA input, which corresponds to a slow pulse output of 2 V. The gate pedestal without input is 0.5% of dynamic range and the feed-through without gating pulses is less than 1%. From the monitor output one can extract timing information which enables one to adjust the gating time within a range of a few ns.
The Kα2 Radiation Monochromated by a New Filter and Its Topographical and Other Applications
Authors: Hosoya Sukeaki
Published: November 2005

It is pointed out that new X-ray filters to choose the Kα2 radiation by cutting Kα1 are available for limited cases. Among these filters, a Ru filter for selecting AgKα2 seems to be practically most useful in various purposes of X-ray crystallography. Some simple applications are described with some preliminary experimental results. The most promising is a simple and quick method to take a topographical photograph without a traverse mechanism and without much loss of resolution. Another example is to take a powder photograph by a Guinier camera with AgKα2 only. Merits and demerits in several possible applications including the single crystal diffractometry are also discussed.
Temperature Dependence of the Photoconductive Lifetime in N-Type Gallium Arsenide Diffused with Copper
Authors: Shirafuji Junji
Published: November 2005

Temperature dependence of the photoconductive lifetime has been studied in the temperature range 100°–360°K on n-type gallium arsenide partially compensated with copper. It is confirmed that in n-type gallium arsenide the electron lifetime is determined by the presence of two different levels: one is a recombination level at about the middle of the band gap and the other is an acceptor level near the valence band. The electron capture-cross-section of the acceptor level is estimated to be 10-22-2×10-23 cm2. From the magnitude of the hole capture-cross-section, the recombination level is presumed to be a donor.
A Simplified Theory of Negative Resistance Diode
Authors: Iida Masamori , Nojima Susumu , Kurosu Tateki
Published: November 2005

Taking account of the charge conditions of deep donors in the intrinsic region, V-I characteristics of N-I junction diode are studied theoretically. It is shown that mobility of the intrinsic region increases with the voltage applied across the junction and the diode exhibits current controlled negative resistance. The dependences of V-I characteristics on temperature are also calculated. The results show that the threshold voltage V
th decreases with the increase of temperature, on the other hand, the sustaining voltage V

m
is almost independent of temperature. The results are in fair qualitative agreement with experiments and several characteristics of Cryosar can be explained by this simplified model.
Hologram Interferometry Using Two Reference Beams
Authors: Tsuruta Tadao , Shiotake Norio , Itoh Yoshinobu
Published: November 2005

A double-exposure hologram interferometer using two reference beams is described which restores fringe visibility after processing and permits to obtain various fringe patterns from a single hologram. It has been successfully applied to the deformation measurements on an object of local variations in lateral translations. Experiments are also presented on changing fringe patterns suitable to interpretations. Expressions were derived for the localization of fringes of diffusely reflecting objects and compared with the experimental results. A good agreement was obtained between them.
Some Experimental Data on Luminous Flow around Bodies
Authors: Matsuzaki Ri'ichi
Published: November 2005

The experimental study of luminous flow ahead of sphere under the conditions of high temperature and low density has been made in this report. For spherical cases, same as the cylindrical cases studied in our previous report, the relative thickness is again found to have increased with the decrease in the body diameter, or with the increase in Knudsen number based on the body radius. Some other qualitative observations on luminous far wake behind cylinders in flow at conditions somewhat different from the case of the spheres have also been reported. Those observed profiles of the wake shock front and the viscous wake region are discussed.
Determination of the Flow Curve by a Cone and Plate Viscometer
Authors: Oka Syoten , Murata Tadayoshi
Published: November 2005

It is shown how to determine the flow curve f(τ) of an arbitrary time-independent non-Newtonian fluid in a cone and plate viscometer from the known relationship between the torque M and the angular velocity \varOmega. The general formula for the flow curve has been applied to a Newtonian fluid.
Transverse Magnetic Field Effect on Carrier Injection into Germanium Slice
Authors: Miyazaki Kazuhiko , Yamaguchi Jiro
Published: November 2005

It is shown that the electric field intensity (E

t
h
) necessary for observing the effective carrier injection into long and thin germanium slice increases with the increasing transverse magnetic field intensity, even when lifetime of carriers in the slice becomes longer with the transverse magnetic field. The phenomenon is considered by the concept of the field-driven, volume-controlled and space charge limited current in long specimens of semiconductors presented by Lampert and Rose in conjunction with the transverse magnetic field effect. The calculated values of the threshold electric field intensity in transverse magnetic field are compared with the experimental results of N-type ana P-type materials with different dimensions at 77°K. It is suggested that the phenomenon will be influenced, though indirectly, by the space charge due to the Hall effect.
Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes
Authors: Sugano Takuo , Hirai Katsumi , Kuroiwa Koichi , Hoh Koitiro
Published: November 2005

Silicon nitride film was deposited on silicon by gas phase reaction between SiH4 and NH3 using N2 as the carrier gas and a horizontal resistance-heated furnace at the temperature range of 650 to 950°C. The higher the substrate temperature became, the larger the wave number of the infrared, which corresponds to the maximum absorption. Film deposited at lower temperature always showed the hysteresis of C-V curve, but it almost disappeared by elevating substrate temperature and supplying much amount of ammonia. MNS diode was very stable to the BT-treatment even if it was intentionally contaminated with NaOH. Interface charge density was nearly 1.5×1012e/cm2 which was little dependent of surface treatments before depositing the film, and seemed to be almost determined by the positive charge in nitride film. C-V curve of the diode showed the frequency dependence, which was due to the accumulation of electrons in nitride film near the interface.
The Retarded Diffusion of Gallium in Silicon. II
Authors: Okamura Masahiro
Published: November 2005

The equations of simultaneous diffusion are solved numerically to estimate the effect of the internal electric field on the diffusion of acceptors together with donors. Gallium diffusion is retarded by the presence of donors of high concentration. It is found that the theoretical retardations are generally larger than experimental ones, and that the computed results do not show the difference in retardation which is observed in experiments between arsenic and phosphorus.
It is also found experimentally that the simultaneous diffusion may cause the push-out of gallium diffusion under certain conditions.
In order to explain these facts, a model is proposed: the diffusion enhancement by the generation of excess vacancies is a mechanism which governs the retardation of gallium in the simultaneous diffusion in conjunction with the internal electric field.
Measurements of Pulsed Current and Magnetic Field by the Faraday Effect
Authors: Tawara Hiroyuki
Published: November 2005

Pulsed magnetic field up to 20 kG was measured by the Faraday effect. The present optical measuring method, though rather simple arrangement, in which the angle between polarizer and analyzer axes is set to -π/4, can make a direct observation possible on accurate wave form and direction of pulsed magnetic field and current with a duration of a few microseconds. Also noises caused by pulsed current source can be eliminated or reduced by using the optical fibers with which the Faraday probe is coupled to the light detector placed a few meters apart from pulsed current source. Some applications of the present method are simply described.
Elastooptic Coefficient of Liquids Determined by Ultrasonic Light Diffraction Method
Authors: Uchida Naoya
Published: November 2005

The elastooptic coefficients of 26 kinds of readily available liquids have been measured using pulsed ultrasonic light diffraction method. As a reference, the coefficient of water was used with the value of 0.322 after Raman and Venkataraman. Values of the coefficient obtained by the present method are always smaller than the values calculated from the Lorentz-Lorenz formula as the majority of data determined by several authors were so. The corrected Lorentz-Lorenz relation (the Böttcher formula) based upon the rigorous treatment on the cavity field in the dielectric medium has been able to considerably diminish the discrepancy, though the systematic deviation has still remained especially for liquids with the low refractive index.
Preparation of Fine Metal Particles by Means of Evaporation in Xenon Gas
Authors: Wada Nobuhiko
Published: November 2005

Fine particles of Be, Mg, Al, Cr, Fe, Ni, Co, Cu, Zn, Ag, Cd and Au were prepared by means of evaporation in xenon gas. The particle size was about 3 or 4 times larger than that for those prepared in argon gas of the same pressure. Almost all particles exhibited distinct crystalline shapes except Al.
Single Crystal CdS Solar Cell
Authors: Shitaya Takao , Sato Hisanao
Published: November 2005

This paper describes the analysis of photovoltaic surface and the photovoltaic characteristics of CdS solar cells fabricated by electroplating copper onto CdS single crystals. The spectral response of the cells resembled to that of photocurrent in copper doped CdS single crystals irrespective of the conduction types of the surface treated by several methods and the capacitance of the cells did not depend on the bias voltage. These features of the cells can be explained in terms of Mott barrier layer existing near the electroplated surface and the photo-generation of carriers excited from the copper states in the insulating layer of CdS. It is concluded that the copper diffused insulating layer plays the main role of the photovoltaic effect and the location of the Fermi level at the surface of CdS is determined by the levels of copper substituted in CdS.
Application of Microchemical Analysis to Diagnostics of Lithium Plasma
Authors: Mohri Akihiro , Tamura Sanae
Published: November 2005

A method for measuring diffusion of a plasma produced from a metal of low vapour pressure with the aid of microchemical analysis is presented. A pinholed cavity of a suitable material can be used as a perfect sink of such a plasma stream. The trace amounts of the plasma deposited in the cavity are determined by flame photometry, the sensitivity of which is exceedingly high for alkali metals.
An example is shown of the application of this method to the electric drift motion of a laser-produced lithium plasma in a uniform magnetic field. The number of lithium atoms colliding with the wall of a vacuum chamber, determined by flame photometry, shows a fairly good agreement with the density of plasma obtained by a double probe.
Electromagnetic Field of Traveling Charge in Beam Ducts
Authors: Hirakawa Hiromasa
Published: November 2005

Electromagnetic field generated by traveling charges in a beam duct and resulting forces exerted on them are studied. Potentials for ellipsoidal charge distributions are computed in a cylindrical duct and in a parallel plate duct, with the aid of Green functions. The results are compared with corresponding potentials in free space. For a duct with resistive wall, the whole field is expanded in a parameter α, which is proportional to (resistivity)1/2. Using general expressions for the first order terms, the decelerating force on the charge, which makes up for the Ohmic energy dissipation, and the transverse forces, which cause the resistive instabilities, are obtained.
Turn-on Mechanism of a Microplasma
Authors: Kimura Chikao , Nishizawa Jun-ichi
Published: November 2005

A turn-on mechanism of a microplasma is investigated. Microplasma phenomena are treated as a two-valued Markoff process. The turn-on delay of a microplasma is given as a Laue plot and is found to be similar to a statistical time lag in a gas discharge. The Laue plot at room temperature shows that the turn-on phenomena are governed by a thermal generation rate of carriers, G

o
(T). On the other hand, most of microplasma turn-on at liquid nitrogen temperature show that they are affected by a transient carrier generation from trapping centers because G

o
(T) is negligibly small. The concerned energy depth of the trapping center is estimated to be shallower than 0.15 eV from the aftereffect of preceding conducting state. Turn-on behavior of a microplasma for the gradually increasing voltage is also analyzed.
Theory of Field Strength Determination in RF Structures by Perturbation Techniques
Authors: Nakamura Masao
Published: November 2005

The reciprocity principal exploited for deriving perturbation formulae which relate the local electric and magnetic fields at the position of a perturbing body inside an r
f structure to the fields induced by the body in an output lead or, in case of a resonant cavity, to the change in the resonant frequency or the quality factor of the cavity. The present theory applies to any r
f structure which is linear and passive; it enables us to apply perturbation techniques to a wider class of structures than hitherto considered possible. It affords us a theoretical basis for some experimental methods which have been used without duly theoretical consideration. As one such example, absorption measurements of fields in Fabry-Perot resonators are discussed. Another example is measurements of travelling waves inside electron linear accelerator structures, for which a result of analyzing some experimental data is given.
Formation and Properties of Anodic Oxide Films on Indium Antimonide
Authors: Sakurai Toshihiko , Suzuki Toshimasa , Noguchi Yoshio
Published: November 2005

The surfaces of the high purity n-type InSb were anodized in a KOH solution under the constant current conditions, and the electrical characteristics of the resultant oxide films were measured at room temperature at liquid nitrogen temperature. A new etching technique for indium antimonide is presented which gives a flat mirror-like surface prior to anodization. At liquid nitrogen temperature, the resistivity of the film is evaluated to be more than 1016Ω-cm, and the breakdown voltage is 100 Volts/µm. The dielectric constant at 1 MHz is 11 for thin films, showing a little dependence on the thickness of the film. A transient behavior in the current-voltage characteristics of the film was observed at both temperatures.
Gamma-Ray Thermoluminescence in Rare-Earth-Activated Y2O3 Phosphors
Authors: Ato Yasuro , Huzimura Ryoitiro , Ozawa Lyuji
Published: November 2005

The gamma-ray- and photo-induced thermoluminescences in rare-earth-activated Y2O3 phosphors are investigated. They have three or four peaks between 85°K and 380°K. The efficiency of thermoluminescence in Y2O3: Eu is highest among the phosphors examined, being about ten times of those of the others. The main peak temperature of gamma-ray-induced thermoluminescence in Y2O3 activated by Eu or Dy is shifted about 10°K from that of photo-induced thermoluminescence. The emission colors in gamma-ray-induced thermoluminescence in Y2O3: Eu and Y2O3: Dy were inferred to be due to the proper photo-luminescent band of Eu3+ and Dy3+, respectively. A broad white-like emission band was found for the lowest temperature peak of unactivated Y2O3. The effects of the heating rate for the present thermoluminescence are the same as in the usual phosphors. The activation energy was 0.996 eV for the highest temperature peak (348°K) of Y2O3: Eu. The growth and fading of this peak after gamma-irradiation at room temperature nearly obey monomolecular kinetics. The effect of radiation damage on the growth of the peak became remarkable with doses near 104R. The mechanism of the thermoluminescence and its applicability to radiation dosimetry are discussed.
Interferometric Method for Measuring Ultrasonic Light Diffraction Spectra
Authors: Mori Hideo , Suminokura Toshihiko , Suzuki Tatsuro
Published: November 2005

An interferometric method for measuring light diffraction spectra of phase gratings produced by ultrasonic sound waves travelling in media is described. The diffracted light beam is heterodyned by the reference light beam coming from the same He-Ne gas laser as for the diffracted beam. Since the frequency of the diffracted beam is shifted according to that of the ultrasonic waves and the spectral order, the spectra are obtained by measuring the beats between two beams.
Clear spectra were obtained for the waves travelling in water and the method will have various applications, such as exact measurements of the velocities and the pressure amplitudes of sound waves in media.
Experiments on the Field Configuration and a Stable Condition of Plasma in PIG Discharge Tube
Authors: Kuroda Tsutomu
Published: November 2005

The noises of plasma in PIG discharge was studied under the various kinds of the magnetic field configuration, i.e. the cusp field, the mirror field and divertor type field. The frequency spectrum of the anode voltage fluctuation and the plasma densities were measured. A stable and optimum discharge condition as a plasma source is obtained in a divertor type field. In such a field, not only the plasma noise amplitudes are minimized and are one fiftieth as large as those in the uniform field, but also the plasma density becomes much greater than that in other field configurations.
Effect of Non-Uniformity in the Disk-Loaded Waveguides of Electron Linear Accelerators
Authors: Nakamura Masao
Published: November 2005

The effect of incrementing dimensions of a cell in a periodic lossless cavity chain is shown to be represented by series reactances and shunt susceptances loaded on a uniform transmission line. Expressions for the reactances and susceptances are given in terms of the fields in the perturbed regions of the particular cell concerned.
The treatment is then applied to the disk-loaded waveguides of electron linear accelerators and a numerical example is given. Some discussions are made on the effect of imperfections of one cell on the frequency of a resonant cavity formed by several cells including the imperfect one, on the mismatches inherent in gradient structures and on the implication of “tuning” of individual cells comprised in a fabricated guide.
The Evaluation of n-Beam Dynamic Electron Diffraction Intensities by Matrix Method
Authors: Fisher P. M. J.
Published: November 2005

On the basis of Fujimoto's1)n-beam matrix formulation, a computational method is given which allows very rapid and accurate estimation of electron diffraction intensities for largen-beam arrays. In its programmed form, the method consists of an array sort procedure which establishes the dispersion matrix. By applying the diagonalization routine of Jacobi to this matrix, the eigenvalues and eigenvectors can be very rapidly derived to six figure accuracy or more. Once this diagonalization has been achieved, no significant increase in computation time is encountered for the evaluation of diffraction intensities for any practical number of thickness levels within any thickness range. Examples of calculation are given for CuAu3. A beam reduction method is discussed, from which a practical criterion is established in regard to the number of beams to be considered in a given calculation.
Substituting Sites of Rare Earth Ions in BaTiO3
Authors: Takeda Takeshi , Watanabe Akinori
Published: November 2005

The electron spin resonance experiment has been performed in reduced ceramic samples of BaTiO3 containing La3+ ions. A characteristic F-center signal was observed for the Ba/Ti ration of 1.02. This observation of F-center signal indicates strongly that some of doped La3+ ions substitute Ti4+ ions and act as acceptors. The effect of some monovalent and trivalent ions on the substituting sites of Gd3+ ions has been also investigated. It was found that for a low concentration of monovalent ions they formed “pairs” with Gd3+ ions at Ba2+ sites.
An X-Ray Study of Faulting in Martensite of Cu-Al Alloys
Authors: Kajiwara Setsuo
Published: November 2005

Stacking fault probabilities in β' martensite of Cu-Al alloys were obtained as a function of solute content by means of X-ray diffraction. It was observed that most of diffraction lines of the powder patterns are shifted due to stacking faults, and these shifts increase with increasing aluminum content of the alloy. Fault probabilities were evaluated from the shifts of diffraction lines on the basis of Kakinoki-Komura's theory which deals with diffraction by crystals containing stacking faults. It was found that the fault probability β in the martensite increases with increasing aluminum content. This fact suggests that the β' martensite in a higher aluminum content alloy has a more tendency to approach to an h.c.p. structure.
The Origin and Structures of the Anomalous Defects Observed in Silicon Crystals
Authors: Yukimoto Yoshinori
Published: November 2005

The structure of defects in silicon crystals, which cause anomalous etching phenomenon and X-ray double images, is studied in detail by X-ray diffraction topography and etching technique. If one uses a particular etching method, the etching phenomenon is a sensitive reflection of the defect structure. Generation of these defects is related to the content of hydrogen gas flow used as the ambient and not to the thermal gradient in the crystal during growth. The images of the defects resemble to those of inclusions with spherical symmetry. When a specimen was annealed in the range from 1000°C to 1200°C, the anomalous etching phenomenon diminishes considerably and the double image changes to various structures such as disc, pair of dot arrays, and concentric multi-loops. A model is proposed to explain the observed experimental results. The differences in the images between the floating zoned crystals and the pulled crystals and between the prismatic loops and the concentric loops are explained in terms of the cooling rates and the vacancy concentration, respectively.
On the Relation between K-State and Magnetic Properties in the System of Iron and Aluminium
Authors: Saitô Hideo , Morita Hiroaki
Published: November 2005

To make clear the effect of the K-state on the magnetic properties and the residual electric resistance in Fe-Al alloys, measurements were made with the 19.53 at% Al-Fe alloy at liquid He temperature after isothermal annealing at 235°C for various durations. Slight changes in the magnetic properties were detected by an improved precise apparatus. At the beginning of the annealing, the saturation magnetization increased until it reached the maximum after about 10 min of annealing, and then decreased. After a prolonged annealing, the magnetization and the hysteresis curves became constricted shape of perminvar type. The residual electric resistance at first decreased to the minimum after about 10 min of annealing and then increased, corresponding to the behaviour of the saturation magnetization. All these phenomena can be explained in terms of the existence of FeAl- or Fe3Al-clusters in the disorderd matrix.
Free Radicals of Nucleic-Acid Components Induced by Radiation from Atomic Reactor
Authors: Hase Hirotomo , Tahira Sadamu , Sidei Tunahiko
Published: November 2005

Nucleic-acid bases and pyrimidine nucleosides have been irradiated at room temperature as dry powders in pneumatic tube of atomic reactor. Total dose is estimated as 1.8×107 rad.
ESR measurement has been made at 77°K and the first derivative spectra obtained are similar to those already reported on the experiment with γ-irradiation with one exception for adenine.
Radical yields of the bases correspond to the order:

cytosine>adenine>uracil>thymine>guanine.

In the case of pyrimidine nucleosides,

cytidine>uridine>thymidine.

The radical yields of the nucleosides are about ten times higher than the bases.
Bulk and Shear Relaxation Processes in Poly-i-butyl Methacrylate
Authors: Morita Eiichi , Kono Ryusuke , Yoshizaki Haruyo
Published: November 2005

Relaxation of the bulk and shear moduli of poly-i-butyl methacrylate is investigated using the modified rotating plate method. Both shifted factors for bulk and shear moduli follow the WLF equation of poly-n-butyl methacrylate. The reduced function of bulk moduli indicates a relatively narrow distribution of relaxation times compared with that of shear moduli. The average bulk relaxation time is found to be nearly five times as long as the average shear relaxation time.
Thermal Expansion and Compressibility of Amorphous Polymers
Authors: Ishinabe Takao , Ishikawa Kinzo
Published: November 2005

Structure insensitive properties of amorphous polymers are discussed on the basis of cell model. Even in amorphous polymer, each polymer chain is supposed to be surrounded by six or four nearest neighbors and they form a hexagonal or tetragonal lattice. Lennard-Jones type potential is assumed between chain units which belong to different chains. The equation of state is obeys the principle of corresponding state. Considering the growth of holes due to the micro-Brownian motions of the chain segments, the dependences of specific volume and compressibility on temperature are discussed for rubbery state as well as glassy one. The results fairly agree with available experimental data.
InSb Photoconductive Detectors in the Far Infrared
Authors: Yamamoto Junya , Yoshinaga Hiroshi
Published: November 2005

Far infrared detectors using n-type InSb element with lower carrier concentrations are studied to obtain optimum bias current and spectral responsivities as a function of magnetic field. The maximum responsivity of the best detector at 4.2°K is 2600 µV/µW at 190 µm with half width of 40 µm in the magnetic field of 7.32 kOe. The wavelength gibing peak response varies with magnetic field in accordance with cyclotron resonance. Element with low carrier concentration shows desirable characteristics as a narrow band detector. Optimum bias current of the detector is determinable from current-voltage characteristic of the element. Time constant of less than 0.4 µs in rise time and 1.0 µs in decay time is obtained by measuring a cyanide laser pulse. The detector has response even at 2 mm-wavelength and is superior in response and time constant of a Si point contact rectifier.
On Temperature Dependence of Anisotropy Dispersion in Ni-Fe Thin Films
Authors: Masuda Morio , Fujii Toshitaka , Uchiyama Susumu
Published: November 2005

The domain structure in Ni–Fe films demagnetized by an ac field in the hard direction was investigated as a function of temperature ranging from room temperature to 400°C. As the temperature was elevated, the skew of domain walls became more and more remarkable. The angular dispersion estimated from the direction of these domain walls agreed fairly well with that measured by means of ferromagnetic resonance. The result indicates that the increase of α90 measured by means of ferromagnetic resonance with raising temperature comes from the increase of the skew which probably originates from the magnetoelastic anisotropy due to the non-uniformity in temperature.
Effects of Time-Varying Diffuse Illumination on Holography
Authors: Fujiwara Hirofumi , Asakura Toshimitsu
Published: November 2005

The process of making a hologram of an object illuminated with time-varying diffuse coherent and monochromatic light is treated theoretically.
The effects of diffuse illumination on the degradation of reconstructed images and on a distortion term (zero-order diffraction term) are discussed. Two important results are obtained for diffuse illumination; (1) contraction of the distortion term in reconstruction wavefronts, and (2) an increase in the degradation of the two reconstructed images.
The improvement of image degradation resulting from the distortion term is shown by means of diffuse illumination, and typical examples confirming this fact are presented in case of a Fraunhofer hologram.
Auto-Recording Type Spectrometer for the Magneto-Optical Rotatory Dispersion
Authors: Hattori Shuzo , Matsuura Kohki , Nakazono Tetsuya
Published: November 2005

A new instrumentation which records automatically the magneto-optical rotatory dispersion as a function of wavelength (MORD) is described. Two cells, filled with a solvent and solution of a sample in the solvent, are symmetrically assembled and are rotated around the axis of symmetry in a magnetic field which is in line with the rotation axis. Linearly polarized light is directed through the upper cell parallel to the magnetic field and then reflected back through the lower cell. Because the MOR reverses its rotation when the direction of the applied magnetic field is reversed, the resultant rotation of the polarization plane which vibrates synchronously with the rotation of the cells shows the difference of the MOR induced by the solvent and solution. The errors of the determination of MORD induced by natural activity and phase change caused by the reflecting surfaces are also discussed.