Deposition of TiN and TiAlVN thin films by DC magnetron sputtering
Authors: Abdallah Bassam , Kakhia M. , Alsadat W. 
Published: December 2019

Purpose

TiN and TiAlVN films have been prepared by DC magnetron sputtering technique at room temperature. TiN target has been used to deposit TiN thin film under pure argon (100 percent Ar) gas. Additionally, Ti6Al4V alloy target has been used to deposit TiAlVN under nitrogen and argon gas (50 percent Ar and 50 percent N2). In this paper, two substrate types have been used: stainless steel 304 and Si(100). This analysis has confirmed that the nitride films, (TiN/Si) and TiAlVN in both cases, have been produced. Energy Depressive X-ray Spectroscopy (EDX) measurement confirmed that the TiN/Si was stoichiometry, where the N/Ti ratio was about 1 with low oxygen contamination. The results obtained have indicated that the TiAlVN has more resistance to corrosion than TiN film in 3.5 percent NaCl at 25°C (seawater). Both films, TiAlVN/SS304 and TiN/SS304, have shown improved corrosion resistance compared with virgin 304 substrate. Microhardness was carried out using Vickers method; the microhardness values for TiN/SS304 and TiAlVN/SS304 were approximately 7.5 GPa and 25.3 GPa, respectively. The paper aims to discuss these issues.

Design/methodology/approach

The films were prepared by a DC magnetron sputtering system starting from high pure (99.99 percent) Ti6Al4V target (Al 6wt%, V 4wt% and balance Ti) in plasma discharge argon/nitrogen (50 percent Ar and 50 percent N2) for deposition of TiAlVN film. Pure TiN target (99.99 percent) was used for preparation of TiN film in pure argon plasma. The diameter of target was 50 mm and the power applied for preparation of the two films was 100 W. A cylindrical high-vacuum chamber (Figure 2) made of stainless steel 316, with height 363 mm diameter, was fabricated locally. Scanning electron microscope images have been used to discover the films morphology. The composition of the films has been determined by EDX technique for films deposited on Si substrate. The electrochemical corrosion test was carried out using conventional three-electrode cell of 300 ml capacity by using Voltalab PGZ 301 system (France) using Tafel extrapolation method and electrochemical impedance spectroscopy techniques.

Findings

TiN and TiAlVN films have been prepared by DC magnetron sputtering technique without heating of the substrates holder. The effects of the composition of nitride films on mechanical and corrosion properties were investigated. The composition of the films has been determined by EDX technique. The effect of using titanium alloy (Ti with Al and V) on the composition and crystalline quality has been investigated. The microhardness is strongly dependent on the addition of the Al and V elements, and it consequently improves mechanical proprieties. The microhardness values for TiN/SS304 were approximately 7.5 GPa and 25.3 GPa for TiAlVN/SS304. They indicate that prepared films prevent the aggressive action of corrosion media.

Originality/value

TiN and TiAlVN films have been prepared by DC magnetron sputtering method at room temperature. Titanium nitride film, especially TiAlVN, is an effective method to improve the corrosion resistance of SS304. TiAlVN film has exhibited enhanced corrosion resistance and higher microhardness. Independent time-of-flight elastic recoil detection analysis has been used to determine the composition of the film.