bluuebunny/crossref_metadata_2025 huggingface dataset:
20‐4: Student Paper: High‐Performance p‐Channel Tellurium Thin‐Film Transistor Applications Fabricated at a Low Temperature of 150 °C
Authors: Kim Taikyu , Choi Cheol Hee , Jeong Jae Kyeong
Published: June 2022

Development of high‐performance p‐channel thin‐film transistors (TFTs) can be an essential building block for next‐generation display technologies which require a great power efficiency. While an n‐channel InGaZnO TFT has been practically demonstrated, the counterparts are still challenging because of their ionic bonding nature. Here we report high‐performance p‐channel hexagonal tellurium (Te) TFT which exhibits outstanding device performances with a field‐effect mobility of 21.2 cm2/Vs, a current modulation ratio of 2.3 × 105, a subthreshold swing of 0.2 V/dec, and a threshold voltage of ‐0.3 V. This study shows a strong potential of p‐channel Te TFT for next‐generation display applications.
21‐4: Implications of Spatial Coherence on Minimizing Diffractive Reflection Artifacts in OLED Displays
Authors: Menke S. Matthew , Freier David G. , Brott Robert L.
Published: June 2022

We demonstrate how spatial coherence affects the appearance of reflective artifacts in organic light‐emitting device (OLED) displays. We find that diffraction can account for a significant proportion of the diffuse reflection, and we provide a timely perspective on the degree to which these artifacts can be mitigated.
24‐2: Development of Methods to Reduce Blue Light Hazard from Displays
Authors: Harris Derek , Garbar Arkady , Broyles Paul J. , Mitzel Kelly , Binger Benjamin , Batdorf Elishaa
Published: June 2022

New materials have been developed for LED backlit displays to reduce the hazard associated from shorter wavelength blue light. This can be done without sacrificing luminance or color gamut.
25‐1: Invited Paper: OLED Microdisplays for AR/VR Applications: Technical Approaches Toward Realization of over 10,000 Nits Full‐Color Panels
Authors: Jo Jang , Kim Pureum , Kim Ho-Jin , Lim Hyeongjun , Joung Seung-Ryong , Yoo Choong-Keun , Choi Dong-Wook , Yang Joon-Young , Ha Yong-Min , Yoon Sooyoung
Published: June 2022

We report technical approaches for enhancing brightness of OLED microdisplays based on Si backplanes (OLEDoS) by changing in white OLED device architectures and incorporating the microcavity technology. In addition, effective strategies for further increasing the performances of the OLEDoS panels are suggested.
26‐1: Invited Paper: Challenges in QD‐OLED Display Technology
Authors: Burschka Julian , Choi Chang-Suk , Greinert Nils , Kossoy Elizaveta , Suzuki Teruaki , Yamamoto Atsuko , Koehler Ingo
Published: June 2022

OLED technology has changed the display landscape remarkably. Now the next generation, QD‐OLED, is reaching the consumer TV market. At its heart, the quantum dot pixelized color convert (QD‐PCC) represents a fundamentally new component with materials and processes yet to be developed and scaled to reach the performance and reliability criteria for a commercially viable mass production. This communication will review critical hurdles encountered during the fabrication of such a color converter with a particular focus on the use of ink‐jet printing to deposit the optically active components. Smart material solutions will be reviewed explaining how they can help to overcome technical challenges and facilitate processing in an industrially viable environment ultimately enabling the cost‐effective commercialization of this promising new display technology
27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays
Authors: Hodo Ryota , Saito Satoru , Sugaya Kentaro , Hiura Yoshikazu , Fujie Takahiro , Sasagawa Shinya , Murakawa Tsutomu , Kunitake Hitoshi , Yamazaki Shunpei
Published: June 2022

An island formation method for fabrication of a miniaturized CAAC‐OS FET has been developed. With our etching process, the CAAC‐OS FET, which has a gate length as small as 6.5 nm, had a high on‐off drain current ratio. The high‐definition display had excellent characteristics of a low lateral leakage current.
28‐2: Invited Paper: Accelerating OLED R&D with Digital Twins
Authors: Vauzelle Arthur , Hauenstein Christoph , Torun Engin , Gijsen Ruud , van Mensfoort Siebe , van Eersel Harm , Gottardi Stefano
Published: June 2022

R&D of OLEOs devices can benefit from the support of simulations. The highest level of insight can be obtained with 30 kinetic Monte Carlo. Concrete R&D case studies showing how 30 kinetic Monte Carlo simulations can be used to address OLEO R&D challenges will be presented.
28‐3: Invited Paper: Enhanced Current Efficiency and Accumulation Charge in Model OLEDs by Light Irradiation During Deposition of Polar Molecule
Authors: Tanaka Yuya , Tazo Yuki , Ishii Hisao
Published: June 2022

The charge accumulation within organic light‐emitting diodes (OLEDs) is a critical factor affecting their performance. Particularly, the accumulated surface charge density (σacc) below the threshold voltage is determined by the polarization charge, which is induced by the spontaneous orientation of polar molecules, such as tris(8‐hydroxyquinolinato) aluminum and 1,3,5‐tris(1‐phenyl‐1H‐benzimidazol‐2‐yl) benzene (TPBi). Recently, the σacc in a TPBi‐based bilayer device was reported to be increased by light irradiation during TPBi deposition [Trans Electron. E104‐C, 176 (2021)]. However, the effect of irradiation on device performance remained unclear. In this study, we found that light irradiation enhances not only σacc but also the current efficiency of the device. This result suggests that the application of light irradiation is a useful process for realizing high‐performance OLEDs.
28‐4: Invited Paper: Effects of Guest Clustering Morphology in Phosphorescent OLEDs
Authors: Zimmerman Jeramy D. , Bennett Roland A. , Niyonkuru Paul , Jaskot Matthew B. , Proudian Andrew P.
Published: June 2022

In this work, we report results of clustering studies across a range of length scales in Ir(ppy)3: mCBP organic light emitting diodes (OLEDs) deposited at a variety of substrate temperatures. We identify signatures of the light‐emitting guest molecules clustering at the local scale using atom probe tomography and large‐scale clusters using high‐angle annular dark‐field scanning transmission microscopy (HAADF‐STEM). Changes of to the small‐ and large‐scale clustering behavior are consistent with changes to conductivity and exciton annihilation processes observed at different substrate deposition temperatures.
31‐2: Student Paper: Fermi Level Prediction of Solution‐processed Ultra‐wide Band gap a‐Ga2Ox via Supervised Machine Learning Models
Authors: Purnawati Diki , Regonia Paul Rossener , Bermundo Juan Paolo , Ikeda Kazushi , Uraoka Yukiharu
Published: June 2022

This work presents machine learning (ML) assisted Fermi level prediction of solution‐processed ultra‐wide bandgap (UWB) amorphous gallium oxide (a‐Ga2Ox) which can significantly accelerate the fabrication of semiconducting UWB a‐Ga2Ox‐based material for future display application. Different models such as Kernel Ridge Regression (KRR), Support Vector Regression (SVR) and Random Forest Regression (RFR) were trained with empirical features, including experimental thickness, annealing temperature and environment during the solution‐processed UWB a‐Ga2Ox film fabrication. This work is a big step towards rapid and cost‐effective optimization method of fabricating UWB a‐Ga2Ox‐based devices.
32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
Authors: Kozuma Munehiro , Okamoto Yuki , Ito Minato , Inoue Hiroki , Saito Toshihiko , Komura Yusuke , Miyata Shoki , Toyotaka Kouhei , Matsuzaki Takanori , Onuki Tatsuya , Kobayashi Hidetomo , Sugaya Kentaro , Fujie Takahiro , Okazaki Yutaka , Hodo Ryota , Yanagisawa Yuichi , Wakuda Masahiro , Murakawa Tsutomu , Sasagawa Shinya , Kunitake Hitoshi , Nakamura Daiki , Nagata Takaaki , Fukuzaki Shinya , Aoyama Tomoya , Kimura Hajime , Yen Shih-Ci , Chang Chuan-Hua , Hsieh Wen-Hsiang , Yoshida Hiroshi , Chen Min-Cheng , Liao Ming-Han , Chang Shou-Zen , Yamazaki Shunpei
Published: June 2022

In this paper, we fabricate a 1.50‐inch, 3207‐ppi prototype OLED display with drivers capable of 32‐division driving, which is achieved by monolithically stacking CAAC‐OS FETs over SiFETs. This structure enables a narrow bezel and two‐dimensional driver arrangement, leading to independent driving of 32 pixel arrays with divided source and gate lines.
34‐1: Novel Liquid Crystal Display Mode SUVA4&SUVA5 with Double Photo Alignment Technology for High Definition Display
Authors: Li Fan , Wang Zhi-gang , Peng Lin , Zhang Yong , Han Hai-bin , Zhou Peng , Kambe Makoto
Published: June 2022

In order to achieve the high transmittance of the high‐definition Display/8K Display panel, the B19 factory has successfully developed a new photo alignment process‐double photo alignment technology SUVA4 and SUV AS, which is the world's first. This new technology reduces the dark lines generated by the pixel ideal alignment division patterns, thereby achieving high panel transmittance. At the same time, the SUVA4 uses the VATN method, which can achieve high panel contrast.
35‐1: Halo Mura of OLED and FALD LCD: Measurements and Perception for Automotive Displays
Authors: Blankenbach Karlheinz , Bhatti Faraz
Published: June 2022

Halo mura affects visual quality of automotive displays. We report on two quantitative methods to measure halo of OLEDs and (FALD) LCDs. The relative halo “luminance” for an OLED is in the range of 0.01 %, which is about 10x larger than that of a state‐of‐the‐art FALD LCD. The decline of halo is exponential and spreads for more than 10 mm. By using the measurements of lines with a length of about 32 pixels as input for simulations, we can extract the halo of a single pixel. A user study resulted in moderate perception of halo at night for negative mode GUIs and relatively high insensitivity for positive mode.
35‐2: Proposal for Improved Calculation Method for the Halo Effect in Digital Displays Based on Human Brightness Perception
Authors: Lim Han Byul , Suh Hyunah , Ha Hyeyoung , Kim Hyosun , Seo Young-Jun , Kwon Jaejoong , Lee Changhee
Published: June 2022

Evaluating the halo effects in digital displays is explained in the Information Display Measuring Standard(IDMS) as the name of halation. However, we found that the calculated halation is not well matched with the perceptual halo level, especially for those of high dynamic range(HDR) displays which show high peak luminance and low black luminance simultaneously. In addition, the values need to be moderately calibrated because the difference between displays cannot be recognized intuitively. Through subjective experiments, we found that perception of the halo effect in the display is more explainable by lightness than the luminance of the display. In this paper, we suggest a new calculation method that is more well‐matched to describe the perceptual halo effects. In the calculation, we used the lightness of the CIELAB and the maximum luminance level in the HDR.
35‐4: Student Paper: Systematic Comparisons on Display Performances including Halo Effect
Authors: Yang Zhiyong , Hsiang En-Lin , Qian Yizhou , Wu Shin-Tson
Published: June 2022

We evaluate and compare the performance of a 15.6‐inch mini‐LED backlit LCD (mLCD) with a commercial OLED panel. Results show that the mLCD exhibits advantages over the OLED panel in peak brightness, gamma curve, color volume, power consumption, and ambient contrast ratio. The LMK imaging photometer with a high‐resolution CMOS sensor is employed to characterize the halo effect and reconstruct the real luminance profiles based on the non‐ideal profile of the OLED display. We have also proposed a novel strategy to measure the backlight's point spread function.
36‐2: Optimizing Brightness with Micro Lens Array Gain Enhancing Films for Edge‐Lit Back Light Units
Authors: Shen Bing , Walker Kenneth L. , Pope Matthew
Published: June 2022

The on‐axis brightness of a conventional edge‐lit back light unit (BLU) was optimized by replacing the conventional down diffuser with a Micro Lens Array (MLA) gain enhancing diffuser (GEF). It was found that the brightness could be increased ~29% by using a GEF with a 90 degree apex angle prism facing the light guide plate (LGP) and pyramidal structures on the backside of the GEF. The angular orientation of the prism relative to the cross brightness enhancing films (xBEF) and the orientation ofthe xBEF relative to the light propagation direction is critical. Different edge‐lit BLUs will require different MLA‐based GEF to maximize brightness.
37‐5: Invited Paper: Flat‐Panel Holographic Display
Authors: Kim Yunhee , Song Hoon , An Jungkwuen , Choi Chilsung , Won Kanghee , Kim Young , Hong Jong-Young , Kim Yongkyu , Sung Geeyoung , Sung Younghun , Kim Kichul , Lee Hong-Seok
Published: June 2022

A new architecture for a flat panel three‐dimensional holographic display is proposed. We developed a beam steering backlight, which is achieved by the integration of a beam deflector and a coherent backlight unit. In addition, a hologram processor is implemented as a single‐chip FPGA. We built a flat prototype that is slim as 10cm thick. It shows high‐resolution holographic images with an improved viewing angle.
38‐3: Invited Paper: MicroLED Device Technology for Low‐Power Wearable Displays
Authors: Flemish Joseph , Armitage Robert , Ren Zhongmin , Soer Wouter , Lotfi Hossein , Chung Theodore , Pathak Rajiv , Kim Hee Jin , Moran Brendan , Smitt Willem Sillevis , Tan Jia Cheng , Tio Yongxiang Melvin , Distor Reich , Lim Shimin , Lim Kheng Boo , Vaidyanathan Anant , Shchekin Oleg
Published: June 2022

This paper presents state of the art for materials and devices for use in low‐power wearable displays. We present efficiencies for InGaN‐R, G, B, and AllnGaP‐R materials, as well as the dependence of performance on current density and emitter size. We further show how display efficiency can benefit from the presented level of microLED performance and contrast various material systems and optimal driving conditions for different display sizes and applications.
39‐1: Distinguished Paper: Gamut Rings of Reflective ePaper Displays with Combined Frontlight and Ambient Illumination
Authors: Hertel Dirk , Bouchard Alain , Kruse Ryan , Penczek John
Published: June 2022

Gamut Rings visualize CIELAB gamut volumes of color ePaper in ambient light. Integrated frontlights provide illumination in darkness and compensate ambient light reflection loss. CIELAB requires a different reference white for self‐luminant and reflective display modes. Color interpolation based on additivity assumption will give erroneous gamut volumes of color ePaper.
39‐2: Evaluating the Components of Reflected Glare in Displays
Authors: Penczek John , Kelley Edward F. , Smith Euan
Published: June 2022

The evaluation of reflected glare from display surfaces is often complicated by the presence of multiple scattering components. We present an annulus light source method for extracting those components in order to quantify their contributions and provide a means to better model display glare for various lighting environments.
40‐3: Distinguished Paper: Realization of Ultra‐High Efficient Fluorescent Blue OLED
Authors: Tasaki Satomi , Nishimura Kazuki , Toyoshima Hiroaki , Masuda Tetsuya , Nakamura Masato , Nakano Yuki , Itoi Hiroaki , Kambe Emiko , Kawamura Yuichiro , Kuma Hitoshi
Published: June 2022

The bilayer structure for an emitting layer (EML) was developed to improve performances of a fluorescence blue organic light emitting diode. By functionally separating the EML into the charge recombination and the Triplet‐Triplet Fusion (TTF) zone, we successfully suppressed the quenching of triplet excitons by excess carriers to make more TTF efficient and the local degradation within the EML to make the lifetime longer. In the bottom emission device with the bilayer EML, 12% of external quantum efficiency (EQE) and 450 hours of LT95 were achieved. Furthermore, we achieved over 14% of EQE by optimizing the material combinations.
44‐2: Electronic Tile for Decoration of Outdoor/Indoor Walls
Authors: Omodani Makoto , Yaguchi Hiroyuki , Kusunoki Fusako
Published: June 2022

We have proposed and developed e‐Tile for wall decoration and ornaments for interior/exterior. A prototype of 2 m x 2 m large energy‐saving reflective panel was realized by arraying 400 e‐Tiles on a flat plane. Prototypes of cubic displays were also realized by constructing e‐Tiles to cubic shape. Artistic display effects and 3D impression could be found in these cubic prototypes. We hope e‐Tile is a promising solution to extend the application field of e‐Paper to decorative use including architectural applications.
47‐4: Color Acceptability Threshold for Mixed Display Technology Automotive Cockpit
Authors: Biswas Pooshpanjan Roy , Dumortier Dominique , Drezet Herve , Avenel Marie-Laure
Published: June 2022

The number of displays inside an automotive cockpit is increasing, and so is the possibility to tap into new technologies. CuJTently, LCD displays are used in most of the mid to high price range cars, but OLED displays have also started making their appearance in cars like Audi E‐Tron, Cadillac Escalate, Mercedes EQS etc. There can be scenarios where the cockpit might have displays with mixed technologies, for example, one display can be an LCD and the other can be an OLED. In this paper we have evaluated the color difference acceptability threshold for such a mixed technology scenario (an LCD and an OLED). A detailed workflow to study the acceptability of users from different age groups through a psychophysical experiment is designed and documented. The acceptability threshold is published using the major color difference formulae available in literature, i.e., CIEDE2000, CIEDE76, CIECAM02‐UCS, DI99d, OSA‐GP and CAMI6‐UCS. This study acts as the first pilot study in the series of studies where several other factors affecting this acceptability threshold will be studied.
48‐3: Invited Paper: Fiber‐Laser Processing of Si and IGZO Films for Advanced AMOLED Displays on Gen 8 Substrates
Authors: Im James S. , Song Ruobing , Park Jayoung , Lisenko Nikita , Shen Bonan , Killips Alexander , Nair Adithya P.
Published: June 2022

This paper reports on the microstructure of SBA‐crystallized polycrystalline Si films and discusses the potential application of SBA for annealing of amorphous IGZO films. A comparison of the crystallized Si films to those produced using ELA reveals that these strikingly differently generated materials are essentially microstructurally identical. We note that SBA (1) accomplishes the feat while providing certain benefits that address the manufacturing‐related ELA issues regarding operating costs and laser mura, (2) can be configured to execute SLS for realizing high‐mobility TFTs, and (3) may further be utilized for optimal heat treatment of IGZO and other materials.
49‐3: Building a Predictive Model of Contrast Ratio of Folded Optic Lens Systems for Virtual Reality
Authors: Hao Bing , Wong Timothy , Le John , Aastuen David , Kotz Art , Rosen David , McGrath Kayla , Kent Susan
Published: June 2022

Polarized catadioptrics (i.e., folded optics, pancake lenses) offer increased resolution and reduced aberrations across a wider field‐of‐view, and in a smaller physical package than conventional refractive optics for virtual reality (VR) head‐mounted display applications. One of the major challenges with polarized catadioptrics is achieving a high contrast ratio. In this paper we will review data generated experimentally and through simulations that demonstrate the impact of key system attributes on contrast ratio. The parameters we explore include the quarter‐wave plate material selection, scattering in the optical components, and rotational alignment between the polarization sensitive components.
52‐2: Ultrawide‐Color Gamut, Low‐Power Consumption White OLEDs for Large 8K OLED TV
Authors: You Juanjuan , Bo Bin , Wu Chang-Yen , Wang Linlin , Shen Yongqi , Song Wenfeng , Yan Guang , Sun Li , Quan Wei , Yu Donghui , Wan Xiang , Wang Xinxin , Shih Huai-Ting , Wu Zhongyuan , Yu Jianwei
Published: June 2022

Next generation WOLED displays demand high color gamut and low power consumption, but it is a severe challenge for the WOLED display technology to meet the needs for high color gamut and low power consumption simultaneously. In this paper, with the optimization of WOLED spectrum which was well matched with CF, wide color gamut close to 99% at DCI‐P3 standard and lower power consumption of W/R/G/B as well as BDR power consumption is obtained.
52‐5: A Color Gamut Mapping Method Using an OLED Display Model
Authors: Park Deoksoo , Shin Hoseok , Song Byoungju , Kim Seungwan , Yum Joohyuk
Published: June 2022

In this paper, we introduce how to map the native Organic Light Emitting Diode (OLED) panel's color gamut to the standard gamut (i.e., sRGB or P3). In order to achieve better accuracy and speedy mapping for the overall gamut region, we modeled OLED panel considering IR‐drop and Lateral leakage which are unique properties of OLED. In the experiment results, it is confirmed that the native mobile OLED panel was tuned to the standard gamut properly and proposed Color Gamut Mapping (CGM) result had an average distortion less than 0.4 in CIEDE2000. (It almost equals to 0.5 JNCD) In addition, whole calibration procedure can be performed within 1 minute by using proposed method, so that could be applied to individual panel calibration in a factory line.
54‐5: Consideration of Image Distance on Cognitive Tunneling with Augmented Reality Head Up Displays
Authors: Pullukat Joseph , To Ethan
Published: June 2022

Previous studies have shown that cognitive tunneling can be reduced when the Head‐up Display (HUD) image is not placed directly in the central vision area but rather a few degrees off center. The theory is that angular eye movement acts as a trigger to allow the brain to separate from the information that the driver does not want to focus on at that time. This paper tests an ancillary hypothesis that locating the HUD image at a different focal distance than the road scene has a similar effect, i.e., changes in eye focus can have a similar trigger affect. This study compares 12 subjects ranging in age from 17 to 49. A video of a car from the passenger's perspective is used to simulate the external environment. While viewing the scene, the subjects must simultaneously monitor speed and detect objects of interest on the road. Speed is located at various image distance to identify performance differences related to focal distances.
57‐3: MircoLED Display Integration on 300mm Advanced CMOS Platform
Authors: Steudel Soeren , Vertommen Johan , Le Boulbar Emmanuel , Buscemi Giuseppe , Bach Lars , Van Huylenbroeck Stefaan , Arumugam Hariharan , La Tulipe Douglas Charles , De Vos Joeri , Miller Andy , Osman Haris , Rebibis Kenneth June
Published: June 2022

We show for the first time a microLED display integration flow in a 300mm CMOS manufacturing platform resulting a pixel density of 9150dpi with a 3μm pixel pitch and a brightness for blue μLED in excess of 600kcd/m2 @100A/cm2.
59‐2: Invited Paper: High‐Color‐Gamut Organic Light‐Emitting Diode Microdisplay for Augmented‐Reality/Virtual‐Reality Devices
Authors: Ahn Dae Hyun , Shin Jin-Wook , Kim Kukjoo , Joo Chul Woong , Cho Hyunsu , Choi Sukyung , Kwon Byoung-Hwa , Kim Gi Heon , Byun Chun-Won , Cho Nam Sung , Lee Jeong-Ik , Sim Soobin , Ryu Jinha , Lee Hyunkoo , Youn Hyoc Min , An Young Jae , Kim Jin Sun , Lee Jeong Hwan , Kim Hokwon , Kim Minseok , Kang Chan-mo
Published: June 2022

In this paper, we developed high color gamut OLED microdisplay. To minimize the crosstalk, a single stack white OLED structure with RGB main peaks was adopted, and RGB color filters were directly patterned on the OLED. In addition, we designed the optical crosstalk prediction model, which could predict the light loss according to the thickness of the passivation layer. As a result, we achieved high color gamut of 125.0% at sRGB, which demonstrated the high color gamut OLED microdisplay.
60‐2: Image‐Plane Separation Artifacts in Multi‐Layer Color‐Reflective Displays
Authors: Henzen Alex , Yuan Dong , Guo Yuanyuan
Published: June 2022

Construction of subtractive color reflective displays depends on low‐loss, reflective, layered cyan, magenta and yellow display panels. This means the image planes of the primary colors have a slight displacement in the direction of view, which may cause artefacts and may influence the ease of viewing. These artefacts are demonstrated and discussed.
62‐1: Large‐Area Ion Implantation Source for Production of Anti‐Reflection Surfaces in Glass and Sapphire Substrates
Authors: Welsh Alexander , Weiss Robert , Brown David , White Nicholas
Published: June 2022

We present source design and process results of a linearly scalable ribbon ion beam for modifying materials by an ion implantation technique. Our source technology enables beam currents up to 30 mA/cm2 and ion implant energies up to 60keV enabling economically viable large format and high throughput processing. In this paper, we demonstrate application of this ion source towards the production of glass and sapphire substrates with durable broadband anti‐reflection surfaces with reflectance <0.5% in the visible spectra. In addition, the anti‐reflection surface is shown to remain after subsequent tempering and chemical strengthening processes.
63‐1: Distinguished Student Paper: Microsecond High‐contrast Continuous 2.25π Phase Modulation Based on Non‐linear Kerr Effect of VADHFLC
Authors: Yuan Zheng-Nan , Sun Zhi-Bo , Yu Xin-Yi , Cheng Ming , Cheng Yue-chu , Li An-ran , Vashchenko Valerii , Kwok Hoi-Sing , Srivastava Abhishek K.
Published: June 2022

Here we disclose a fast (ON time ~50μs and OFF time‐25μs at 55°C), high‐contrast, continuous phase modulator without fringe field effect (FFE). The phase modulator using the Kerr effect of vertical aligned deformed helix ferroelectric liquid crystal (VADHFLC). Specifically, FFE is a long‐term problem for nematic liquid crystal (NLC). In this article, we are disclosing, for the 1st‐time found, that no FFE exists for VADHFLC, even for phase modulator with 1μm pixel pitch, which is an attractive feature for ultra‐high‐resolution display and photonic applications. Moreover, the Kerr constant is 88 nm/V2, and the contrast ratio is larger than 1000:1. It is a promising candidate for high‐PPI AR/VR displays, wavelength selective switch (WSS), hologram, adaptive optics, and LiDARs.
66‐1: Invited Paper: Hole‐Transport Materials — Key Enablers for Future OLED Display Evolution
Authors: Engelhart Jens , Montenegro Elvira , Tuffin Rachel , Kim You-Hyun , Kraska Martin , Weegels Leo , May Falk , Kaiser Joachim
Published: June 2022

This article gives a short review on current development fields of hole transport materials for organic light emitting diodes. A special focus is set on the paradigm shift observed by an increasing relevance to control panel performance parameters beyond classical device characteristics like driving voltage, efficiency, and lifetime. This requires new material design approaches by new measurement and simulation techniques as well as new molecular properties to be considered in material design concepts.
66‐3: Active Learning for the Design of Novel OLED Materials
Authors: Abroshan Hadi , Chandrasekaran Anand , Winget Paul , An Yuling , Kwak Shaun , Brown Christopher T. , Morisato Tsuguo , Halls Mathew D.
Published: June 2022

This work demonstrates an active learning (AL) workflow for identifying promising material candidates for organic lightemitting diodes (OLEDs) based on multiple optoelectronic parameters while minimizing the number of physics‐based computations to explore an extensive library. This work paves the way for efficient computational materials screening before laborious synthesis, and device fabrication.
68‐3: Importance of Individual Adaptation in Visually Fidelitous Dynamic‐Range Compression from HDR to SDR Images
Authors: Iwaida Saki , Orita Yuichiro , Hira Shoko , Kashima Masayuki , Ohtsuka Sakuichi
Published: June 2022

Reproducing fidelitous videos/images that include the individual impressions induced when the real scene is viewed, is important. Our previous psychological studies and the latest physiological research result conducted by Kubota et al. newly suggest that the human visual system characteristics change dynamically on circadian rhythm. This study also suggests that they significantly depend on individuality, i.e., personal behavior.
69‐2: A Universal Method for the Lamination of Arbitrary Stretchable Substrate Pairs without Compromising the Elastic Properties of the Substrates
Authors: Jeong Kihoon , Lee Yujin , Kim Youson , Mun Hyeonwoo , Kyung Ki-Uk , Im Sung Gap
Published: June 2022

Lamination of elastomers while maintaining the stretchability is challenging for the fabrication of stretchable devices. Adhesion between arbitrary soft substrates was achieved by the formation of interpenetration polymer network at the adhesion interface. Strong adhesion was retained even after harsh fatigue test (50% strain, 100,000 times) and wet condition test.
69‐3: Opportunities for High‐Performance Display Manufacturing Enabled by OTFTs Using an 80*C Maximum Process Temperature
Authors: Ogier Simon , Sharkey Dan , Carreras Alejandro , Tsai Steven
Published: June 2022

This paper describes advantages in manufacturing available when dual gate organic thin‐film transistors (OTFT) are integrated into display backplanes. A maximum process temperature of 80°C was chosen throughout the fabrication which used standard display backplane coating and patterning techniques. OTFTs produced in this way demonstrated mobilities up to 3cm2/Vs with on/off ratios above 109. Using 80°C processing permits the use of a wide range of low‐cost plastic substrates with good clarity for semi‐transparent displays. Biodegradable and bio‐derived substrates can be used which helps prevent the problem of plastic pollution at the end of life of the product. Laminating plastic on glass carrier substrates is made easier through the low thermal budget, reducing distortion, and bowing. Additionally, integration of emissive elements such as OLEDs, colour filters, micro‐LEDs could take place before the backplane is applied which may offer benefits in yield or functionality.
69‐4: Collimating and Recycling Linear Evaporation Source for AMOLED Mass Production
Authors: Kim Sungmoon , Chi Daejoon , Lee Taekgi , Ko Gyoung O
Published: June 2022

It is important in AMOLED pixel forming process to reduce low angle region flux of particles emitted from thermal evaporation source. Because it can cause the mask shadow effect, nozzle clogging and material waste. We developed Collimating and Recycling source. It has unique nozzle structure that can make low angle flux go down to recycling basket and pass only high angle flux through final nozzle. It can make collimating flux that is similar with cosine to the tenth. And it can recycle material 70%.
71‐3: Static Laser Phosphor for Projectors with Rotating Tilted Mirror
Authors: Li Kenneth , Chang Y.P. , Wang Lion , Chen Andy , Cheng W.H. , Han Pin , Chen Chih-Ming , Liu C.N.
Published: June 2022

Laser excited phosphor has much higher brightness than that of LEDs and are suitable for many high power, low etendue applications. One of the major obstacles is heat sinking of the phosphor in high power applications with the phosphor material coated onto a rotating wheel. This paper presents a static phosphor plate system in which the phosphor plate is stationary and can be attached to traditional heat sinks for efficient removal of heat at high power, which cannot be achieved easily when the phosphor material is on a rotating wheel. The highest equivalent power density of estimated from 300 W to 600 W per sq. mm has been achieved, which is over 6 times higher than the original limit of the phosphor material. It is also found that the thickness of the phosphor plays an important role in the power density limits. Thinner phosphor plates are being investigated for even higher power operations with expected high limits.
73‐3: Student Paper: Achieving Deep‐Blue Color in Diboron Embedded Multi‐Resonance Thermally Activated Delayed‐Fluorescence Emitter for Narrowband OLEDs
Authors: Naveen Kenkera Rayappa , Lee Hyuna , Braveenth Ramanaskanda , Yang Ki Joon , Hwang Soon Jae , Kwon Jang Hyuk
Published: June 2022

We report three deep blue multiple resonant TADF emitters, m‐ν‐DABNA, 4F‐ν‐DABNA, and 4F‐m‐ν‐DABNA by incorporating methyl groups and fluorine atoms in diboron based ν‐DABNA core. The introduction of methyl groups and fluorine atoms resulted in bandgap enhancement by electron donating and electron withdrawing effects. All three emitter's exhibit pure blue emissions with high photoluminescence quantum yield around ~90%, small ΔEST (≤ 0.07 eV) values, and fast reverse intersystem crossing rate (kRISC). Fabricated OLEDs with these emitters show excellent external quantum efficiency over 33%. Among three materials, 4F‐ν‐DABNA and 4F‐m‐ν‐DABNA exhibit the CIE y coordinate of 0.08 and 0.06, respectively.
74‐1: 31″ Flexible Printed OLED TV Display Technology: It's TV Mobiles
Authors: Lee Jueng Gil (James) , Gao Zhuo , Fu Dong , Yan Xiaolin
Published: June 2022

The flexible printed OLED TV display technology will be able to create new application market, such as rollable/foldable TV, in the future. It's TV Mobiles. Recently, the TCL (Guangdong Juhua Printed Display Technology Ltd. Co, TCL CSOT & TCL Corporate Research) has successfully demonstrated the 31″ FHD flexible printed OLED TV in CES 2020. The product is fabricated by ink jet printing technology with top emission OLED device architecture, advanced encapsulation technology and is driven by IGZO oxide TFT B/P technology. The panel performance of 31″ flexible printed OLED TV has continuously improved drastically after demonstration at CES based on optimization of top emission OLED device architecture including printing OLED material development, MURA free printing technology, Oxide TFT B/P technology and advanced thin film encapsulation technology. The RGB device performance of 31” FHD flexible printed OLED TV has high current efficiency and long‐life time,

R:(0.68,0.32), 46.3cd/A, LT95>8khrs@1knits,

G:(0.28,0.70),115.5cd/A, LT95>6khrs@1knits,

B:(0.13,0.062),5.35cd/A, LT95 >0.35khrs@1knits respectively.

It is getting closer and closer to meet the commercial requirement of flexible OLED TV target specification. The technical challenges of 31″ FHD flexible printed OLED TV are also identified. In this paper, the technology development status and technical challenges are discussed
74‐4: Development of Flexible Full‐Color Mini‐LED Display Using Simultaneous Transfer and Bonding (SITRAB) Technology
Authors: Joo Jiho , Choi Gwang-Mun , Lee Chanmi , Kye In-seok , Eom Yong-Sung , Jang Ki-Seok , Hwang Seok tae , Kim Jeong Duck , Choi Kwang-Seong
Published: June 2022

We used simultaneous transfer and bonding (SITRAB) technology to fabricate a full‐color Mini‐LED display on a flexible substrate. SITRAB technology is ETRI's patented technology that integrates transfer and bonding into a single process. We adopted a 25 μm‐thick polyimide film as the display substrate. RIGIB Mini‐LEDs were arrayed on a glass carrier as a 32 × 32 array. RIGS Mini‐LEDs on twelve glass carriers were transfer‐bonded to the display substrate through a tiling process. The fabricated display consists of 64 × 64 color pixels, which are connected in a passive matrix
76‐4: Invited Paper: Innovation Solutions that Lead to AMLED Technologies
Authors: Xuan Minghua , Chen Xiaochuan , Yuan Guangcai , Wang Dan , Dong Xue
Published: June 2022

LED display is not only used in the PM‐driven display devices we often see in PCB substrates, but also in the future, it can also be applied to glass‐based substrates of mobile phones, notebook computers, TVs and other consumer electronic products that require higher display image quality and low power consumption, may also be automotive, high‐speed rail, subway and other applications that require high reliability. It can also be applied to AR and even VR applications that require high brightness and high resolution and based on the characteristics of its LED inorganic light‐emitting devices, a variety of innovative applications can be developed indefinitely.

This paper elaborates the innovative scheme of LED display based on glass substrate, combined with the TFT transistor process of glass substrate, driving circuit and innovative LED light‐emitting device, and proposes an innovative scheme for LED display applications
P‐1: Uni‐Color Column Line Pentile‐Type Pixel Arrangement Design for Low Driving Power Consumption AMOLED Displays
Authors: Choi Sangmoo , Song Janghoon , Chang Sun-il , Karri Jyothi , Bita Ion
Published: June 2022

As active‐matrix organic light emitting diode (AMOLED) displays have rapidly become the primary choice for high performance mobile devices, reducing their power consumption to enable long battery life continues to be a very important challenge. In particular, the power consumption required to drive the display electronic circuits has recently increased significantly due to the industry trends for high resolution, high refresh rates, and high screen aspect ratio. In this paper, we propose a uni‐color pixel column design for the typical Pentile‐type pixel arrangement used for AMOLED displays in order to lower the driving power consumption. Considering a QHD+, 6.x inch‐diagonal smartphone application, the estimated power saving benefits of the proposed architecture are 10% for averaged image contents, and up to 42% for red/blue saturated images in the analog driving power consumption.
P‐5: A New PWM Driving Circuit with Threshold Voltage and I‐R Rise Compensating Capability for Mini‐LED Backlight
Authors: Chang Jui-Hung , Lin Chieh-An , Deng Ming-Yang , Guo Wen-Rei , Lin Chih-Lung
Published: June 2022

A new driving circuit using PWM method is developed for use in mini‐LED backlight. Analytical results demonstrate that current error rates caused by ±0.3 V VTH variations of TFTs and 0.5 V VSS I‐R rise are below 9.96%. Moreover, the power consumption is reduced by 16.09% compared with 6T1C circuit. Author Keywords
P‐6: Student Poster: 2731ppi OLED Display with Low Power Consumption and Wide Viewing Angle Using OS/Si VLSI Process Technology
Authors: Kimura Kiyotaka , Tamatsukuri Yuki , Shishido Hideaki , Kobayashi Hidetomo , Isa Toshiyuki , Takeuchi Toshihiko , Kunitake Hitoshi , Kimura Haijme , Yamazaki Shunpei
Published: June 2022

A 2731‐ppi OLED display was fabricated. Its source and scan drivers comprise Si transistors, and its pixel circuit comprises oxide semiconductor field‐effect transistors monolithically formed directly on the Si transistors.
P‐7: Student Poster: AMOLED Pixel Circuit for Strain Compensation in Stretchable Display
Authors: Kang Jimin , Kang Kyeong-Soo , Park Ji-Hwan , Lee Soo-Yeon
Published: June 2022

This paper proposes a compensation pixel circuit for stretchable active‐matrix organic light‐emitting diode (AMOLED) display that compensates for the threshold voltage variation and luminance reduction caused by display stretching. The simulated results of the current error rate are suppressed under 10 % at 20 % strain with ±0.5 V threshold voltage shift. Also, the luminance variation was significantly reduced from 19.3 % to 0.12 %.
P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS
Authors: Hosaka Yasuharu , Obonai Toshimitsu , Dobashi Masayoshi , Nakayama Tomonori , Shima Yukinori , Ohno Masakatsu , Yamazaki Shunpei
Published: June 2022

This work verifies the existence of more than one cause of NBTIS degradation of oxide semiconductor FETs by analyzing its time dependence. As defects in a gate insulator (GI) that cause NBTIS degradation, indium diffused into the GI also serves as hole trap defects besides the NBOHC defects proposed by Tsubuku et al.
P‐11: Effects of Ar Dilution on N2O/SiH4 PECVD for the Growth of Silicon Oxide Thin Films with Improved Breakdown Voltage Characteristics
Authors: Kim Aram , Lee Bokyoung , Kim Hyeona , Bang Jungho , Nam Seung Hee , Park Kwon-Shik , Kim Jeomjae , Yoon Soo Young
Published: June 2022

In order to obtain a robust gate dielectric, the nitrogen atom incorporation in the silicon oxide thin film has been investigated in much prior study in recent years. Silicon oxide thin film deposition is mainly performed using SiH4‐N2O plasma by the Plasma enhanced chemical vapor deposition (PECVD) system. Reducing the N2O/SiH4 gas flow ratio increases the nitrogen content in the film. However, the film uniformity dramatically deteriorates as the N2O/SiH4 ratio is decreased and this issue makes the low N2O/SiH4 ratio condition a challenging area for the process condition. In this study, to overcome this problem Argon (Ar) addition was employed to the low N2O/SiH4 ratio plasma and we found that Ar not only allows the thin film to be uniformly deposited by increasing the plasma density due to the penning effect, but also increases Si‐N bond especially under the ratio of 10:1 condition. Even though the silicon oxide thin film was deposited with low N2O/SiH4 gas flow rate, the film uniformity and breakdown voltage characteristics dramatically improved by Ar dilution. In addition, LTPS p‐channel TFT was fabricated by utilizing the improved silicon oxide thin film as a gate dielectric layer and it showed excellent electrical characteristics. This work would be one of the most practical solutions for robust gate dielectric deposition.
P‐16: Student Poster: New a‐IGZO TFT Pixel Circuit Compensating Threshold Voltage and Mobility for Active‐Matrix OLED with Source Follower Method
Authors: Park Ji-Hwan , Kang Kyeong-Soo , Kang Jimin , Lee Soo-Yeon
Published: June 2022

This paper proposes a new amorphous indium gallium zinc oxide (a‐IGZO) pixel circuit for the simultaneous emission active‐matrix organic light‐emitting diode (AMOLED) displays, which can compensate for the non‐uniform threshold voltage (VTH) and mobility (μ) of the thin‐film transistor (TFT). The Negative VTH are successfully compensated by adopting the source follower method, and then mobility compensation is carried out by additional voltage adjustment. The OLED current error rate is within 9 % against the VTH and mobility variations in the simulation.
P‐20: High Quality Self‐Aligned Coplanar Thin‐Film Transistors with SOG Materials for High Transparent AMOLED Display
Authors: Liu Wei , Song Young Suk , Zhang Xing , Liu Fengjuan , Gu Pengfei , Zhang Jianye , Lu Yuhang , Wang Haoran , Sun Hongda , Ning Ce , Yuan Guangcai
Published: June 2022

We improved the performance of self‐aligned coplanar thin‐Film transistors with SOG Materials. In this work, the composition of TFT's buffer layer was changed by SOG Material to ensure the electrical performance of TFTs and high transparency of panel simultaneously. In addition, the shielding metal layer of self‐aligned top gate TFT was used as auxiliary cathode which can improve the uniformity of large size AMOLED display. We achieved 48% transparency of AMOLED display panel with 80PPI resolution ratio.
P‐24: Distinguished Student Poster: Gate Driver with LTPO‐TFT Circuits for Low Power Consumption and Narrow Bezel AMOLED Displays
Authors: Kim Junyeong , Jang Jin
Published: June 2022

We propose a novel gate driver circuit using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistors (TFTs). The proposed circuit operates well when oxide TFTs have VTH of −7.5 V, which is very depletion mode. In addition, by utilizing extremely low off‐state current of oxide TFTs, ultra‐low power consumption can be achieved. The proposed circuit consists of only six TFTs, four p‐type LTPS and two n‐type a‐IGZO TFTs, without capacitor. The fabricated circuit operates with a pulse width of 1 μs corresponding to operating speed of 500 kHz with very small pitch. The proposed circuit can be applied to ultra‐high definition (UHD) and narrow bezel AMOLED display.
P‐25: Student Poster: Solution‐Processed CH3NH3PbI3/ZnO Phototransistor with High Photodetectivity
Authors: Haque Farjana , Hasan Md Mehedi , Mativenga Mallory
Published: June 2022

We report a phototransistor using the CH3NH3PbI3/ZnO heterostructure. The CH3NH3PbI3 (MAPbI3) and ZnO are deposited via low‐cost solution process. MAPbI3 coated ZnO TFTs exhibited enhanced photocurrent upon exposure to white light. The heterostructure formed between perovskite and ZnO, works as an efficient electron transport layer. The device had a responsivity of 195 A/W and a high detectivity of 1.10 × 1013 Jones under white light. The high photo‐responsivity and detectivity resulted from the combination of suitable optoelectronic property of MAPbI3 films and the high mobility of the spray coated ZnO films.
P‐30: Thermally Activated and Field‐Enhanced Diffusion of Dopants in a‐InGaZnO TFTs Under Circuit Operations and Correlation to Device Stabilities
Authors: Ryoo Chang Il , Yang Tae Jun , Lee Hee Jun , Bae Jong-Ho , Choi Sung-Jin , Kim Dong Myong , Ahn Byung Du , Bae Jong Uk , Shin Woo-Sup , Kim Dae Hwan
Published: June 2022

The spatial distribution of the donor dopant and the source‐drain resistance (RSD) in oxide Thin Film Transistor (TFT) for display backplane is usually considered to be determined by the device structure and the process. This work shows that the dopant concentration of lateral distribution of thermal equilibrium carrier concentration n0(y) may vary dynamically depending on the operation conditions during circuit operation and thermally‐activated and field‐enhanced diffusion of dopants in InGaZnO (IGZO) was found as a physical cause. In actual Organic Light‐Emitting Diode (OLED) backplane circuit operation, the reliability degradation conditions of IGZO TFTs were summarized into three conditions: Negative Bias Temperature Stress (NBTS), Constant Voltage Stress (CVS), and Drain‐to‐Source Voltage (VDS)‐sweep, and as a result of analyzing TFT device reliability, dopant diffusion occurred as the temperature increased, and the lateral field increased, resulting in RSD increase and channel resistance decrease. This causes degradation of device characteristics accumulated during circuit operation and shows various degradation patterns. It is connected to the existing Positive Bias Stress (PBS) and Negative Bias Stress (NBS) degradation mechanisms and other hot carrier degradation and self‐heating. In particular, it has been reported that dopant diffusion and source‐drain series resistance (RSD) change occur under high VGS, high VDS, and short channel conditions, resulting in permanent failure of the IGZO TFT channel by forming positive feedback.
P‐32: Investigation on Mechanism of Illumination Mura in AMOLED Display with LTPS‐TFT Backplane after Long Term Localized Illumination
Authors: Guo Enqing , Gai Cuili , Li Junfeng , Xing Rubo , Chen Fa-Hsyang , Ding Lidong
Published: June 2022

Low‐temperature polycrystalline silicon (LTPS) thin film transistors have been widely used in AMOLED display applications due to the high mobility and the capability of realizing peripheral and active matrix circuits on glass. Though LTPS TFTs exhibited relatively good electrical performance and stability, illumination Mura on AMOLED display with LTPS backplane could be observed by naked eye after several hours’ illumination on localized display area. The Mura boundary separates the areas with and without illumination when the AMOLED display is lighted on without pattern. The electrical instability of LTPS TFT was proved to be the main underlying cause. The DTFT threshold voltage compensation effect and SS variation in 7T1C pixel circuit has certain relationship with the illumination Mura detail.