bluuebunny/crossref_metadata_2025 huggingface dataset:
Ellipsoidal Model for Non-Newtonian Intrinsic Viscosity of Chain Polymer Solution
Authors: Maruyama Tsuruyo , Yamamoto Misazo
Published: November 2005

In order to discuss the non-Newtonian intrinsic viscosity of polymer solutions, the authors adopt an improved ellipsoidal model for the polymer molecule. Chikahisa's rigid ellipsoid model theory gives a good explanation of the shear-rate dependence of the intrinsic viscosity but his theory neglects the micro-Brownian motion of the chain polymer molecule. The authors establish a theory considering that the molecule may change its shape due to the micro-Brownian motion. The axial ratio of the deformed ellipsoid is obtained and the shear-rate dependence of the viscosity is calculated by Saito-Scheraga's theory. The region of the shear gradient where the viscosity reduction occurs is discussed comparing with Chikahisa's theory. There are two mechanisms to cause the non-Newtonian viscosity: the orientation of the polymer molecule and the deorientation of it. Which of these is more dominant in the non-Newtonian viscosity depends on the nature of polymer systems.
Some Properties of Europium β-diketone Chelates I (Synthesis and Fluorescent Properties)
Authors: Sato Susumu , Wada Masanobu , Seki Torao
Published: November 2005

As the organic laser materials, tetrakis europium β-diketone chelates have been prepared by using several β-diketones which contain a trifluoromethyl group as well as an aromatic hydrocarbon such as naphthalene, phenanthrene, anthracene, or compounds substituted at the para position of a benzene ring. Absorption and excitation spectra, fluorescence quantum yields, and fluorescence lifetimes of these europium chelates have been obtained. Except for the europium chelates of β-diketones derived from benzylideneacetone (EuBZDTFA) and anthracene (Eu9ATFA), these europium β-diketone chelates show strong red fluorescence characteristic of Eu3+ ion at room temperature both in solution and in crystalline powders. EuBZDTFA does not fluoresce till the temperature is lowered to about -80°C, and Eu9ATFA never fluoresces even at the liquid nitrogen temperature.
Barrier Capacitance and Built-in Voltage of Tunnel Diodes
Authors: Arizumi Tetsuya , Yoshida Akira
Published: November 2005

Taking the mobile carriers in the depletion layer into account, the barrier capacitance of a tunnel diode is shown to be expressed by the following equation,

\frac{1}{C^{2}}=\frac{2(N_{A}+N_{D})}{q\varepsilon\varepsilon_{0}N_{A}N_{D}}[V

B
+V

a
-\frac{kT}{q}{\frac{F_{3/2}(\zeta_{p})}{F_{1/2}(\zeta_{p})}+\frac{F_{3/2}(\zeta_{n})}{F_{1/2}(\zeta_{n})}}],

where F
ν(ζ) is the Fermi integral. The slope of the 1/C
2 vs. V

a
(applied voltage) curve is in accord with the classical formula (obtained through the ordinary Schottky approximation), but the voltage intercept V

c
(by extrapolating to 1/C
2=0) is different from the built-in voltage V

B
. The temperature dependence of the built-in voltage of a tunnel diode is satisfactorily explained.
Attenuation of Ultrasonic Waves in Aqueous Emulsions of iso-Octane
Authors: Ohsawa Toshihiko
Published: November 2005

The attenuation of ultrasonic waves at 3MHz in aqueous emulsions of iso-octane is measured in the range of average particle radius of 2 to 16 microns. Observed values agree well with those calculated from theory, including scattering loss, viscous drag loss, and loss due to thermal conduction between particle and medium, the last of which has been predicted by Isakovich. In the present case in which the particle radius is much smaller than the incident wavelength and much greater than viscous wavelength, the thermal conduction loss plays a dominant role.
Vapor Phase Crystallization of Vanadium Oxide by Hydrolysis of Vanadium Oxychloride
Authors: Takei Humihiki
Published: November 2005

A new method of preparing single crystals of V2O5, VO2, V3O5, V2O3, and VO has been presented, which is based on the chemical decomposition of VOCL3 vapor with moisture in an inert or reducing atmosphere. In this method, V2O5 and VO2 crystallized in a whisker shape, whereas V3O5 and V2O3 in a dendritic form composed of well-developed thin platelets. Thin films of VO single crystal were successfully grown by the epitaxial technique on the MgO substrate, and those of VO2 on either TiO2 or GeO2. The observation on the surface structures and on the morphology of the crystals thus obtained has suggested that the mechanism of `layer growth' may apply to the case of V2O5 and VO2 crystals. The growth of V3O5 and V2O3 has been interpreted in terms of two-step mechanism, in which the crystallization begins with dendritic growth and then proceeds to layer growth. The epitaxial growth is successful only when sufficient structural matching holds between the substrate and the growing crystals.
A PIG Ion Source of (He3)++ for the Van de Graaff Accelerator
Authors: Kumamoto Yoshikazu , Isoya Akira
Published: November 2005

A PIG type ion source for the Van de Graff accelerator has been developed for the production of (He3)++ ion. Under good operating conditions, (He3)++ ion current amounts to 3% (about 9 µA) of the (He3)+ ion current. The main emphasis in design in to produce the strong magnetic field in the arc chamber.
Some Comments on Energy Loss Measurements Made with a High Voltage Electron Microscope
Authors: Metherell A. J. F.
Published: November 2005

There is a distinct possibility that chromatic aberration may be a deciding factor in determining the specimen thickness that can be usefully penetrated with high voltage electron microscopes. In this paper a simple model of multiple inelastic scattering is considered, and method of calculating the most probable loss is discussed. The theoretical loss profiles so obtained are compared with Kamiya's experimental results, obtained with a 500 kV electron microscope.
Sustaining of the Low-Field Avalanche in the GaAs Thin-Film Switch
Authors: Takagi Toru , Mizushima Yoshihiko
Published: November 2005

High-speed switching phenomenon utilizing the dielectric breakdown in thin film of GaAs has been observed. The switch-on state is sustained at the field of 5×103 V/cm. It is proposed that the electron avalanche can be maintained in such a low field by considering the energy distribution of the current carriers. Once the dielectric break-down sets in, the electron concentration increases, and the distribution function changes to a displaced Maxwellian with a high-energy tail due to increased interelectronic scattering. This effect makes it possible to sustain the “low-field avalanche.”
The generation rate of the carriers is calculated for this distribution. The recombination rate is calculated for the direct interband radiative recombination. The calculated minimum sustaining field of the switch-on state is 3.2×103 V/cm. This field strength, as well as the current density, agrees approximately with the observed value.
A Construction of the High Power Laser Amplifier Using Glass and Selenium Oxychloride Doped with Nd3+
Authors: Sasaki Takatomo , Yamanaka Tatsuhiko , Yamaguchi Gentaro , Yamanaka Chiyoe
Published: November 2005

The laser parameters such as an inversion density, a stimulated transition cross section and a loss factor in the glass laser amplifier medium were experimentally determined. Using these values, the rate equations of Baser amplifier were solved with various input pulse forms. To get extremely high output power, it is necessary to send a very steep input pulse into an amplifier. An experiment of two-stage amplifier was performed and the maximum output power obtained was 1.1 GW, which well agreed with calculations. The various problems in amplification were considered. To get larger power, the mode locked laser was prepared. The SeOCl2-Nd3+ liquid laser seems to be more durable against a damage of laser rod. An experiment of laser amplifier consisting of glass and SeOCl2 lasers was performed. The sufficient gain could be obtained even if the center spectrum of the SeOCl2 laser was about 50 Å shorter than that of the glass Baser.
Experimental Studies of the Harmonic Radiation in a Microwave Gas Discharge at 34 GHz Frequency
Authors: Tamaru Takeshi , Chiyoda Katsuji , Maejima Yoshiki
Published: November 2005

Experimental studies are made of the harmonic generation in a microwave gas discharge at 34 GHz in pure gases and mixtured ones with air. The result shows that the rare gases do not give effective results compared with air and that these gases mixed with air give promising efficiencies for an application of this phenomenon to a power source.
Inertia Effect in Hydromagnetic Slider Bearing
Authors: Agrawal V. K.
Published: November 2005

A theoretical investigation of inertia effects in an inclined slider bearing with an electrically conducting lubricant in the presence of azimuthal magnetic field is presented. It is shown that the load supporting capacity of bearing is increased for short circuit case if the lubricant inertia effects are taken into account. However, the inertia effect becomes smaller when the strength of magnetic field increases. In open circuit case for Hartmann number M≤4 the load capacity increases due to inertia and for M≥5 the load capacity decreases due to inertia. Further it is seen that the effect of inertia is rather small at Hartmann numbers 4.1, 4.2, 4.2 and 4.4 for Reynolds numbers .01, .1715, .25 and 1.39 respectively.
The Problem of an Unsteady Heat Transfer from Porous Flat Plate: Compressible Boundary Layer
Authors: Garg Kalyan Das
Published: November 2005

We have obtained exact solutions in closed form for the unsteady compressible boundary layer's equations. The problem is initiated by moving the plate impulsively, and simultaneously raising its temperature. We have examined the effect on the motion in the boundary layer, far down from the leading edge, when, each quantity is independent of x. The transformation, suggested by Stewartson, is applied to change the independent variables (y, t) to (Y, t), and applying Laplace transform, we are able to solve the equations.
Crystal Growth from Amorphous Phase in Thin Films
Authors: Shiojiri Makoto , Morikawa Hiroshi , Suito Eiji
Published: November 2005

The crystal growth during crystallization of the amorphous thin films of titanium dioxide and selenium is interpreted. The nucleated crystals grow extending long in a given direction and the interfaces between crystallized and amorphous regions become indented. It is shown that the laeat generation at the crystallization and the anisotropic flow of the heat in the crystals lead to these anisotropic growths.
Influence of Thermal Conditions during the Course of Crystal Growth on the Qualities of a Ruby Single Crystal
Authors: Shiroki Ken-ichi
Published: November 2005

Ruby crystals were grown by the Verneuil method under three thermal conditions. The temperature distribution in the crystals was determined during the course of crystal growth. The axially steep and radially flat temperature-distribution was observed in the growing crystals. The misorientations of the crystals were investigated by means of anX-ray diffraction method. The optical qualities of the crystals were observed by introducing a gas laser light into the crystals. It was found that axially steep temperature gradient gave rise to misorientations and optical inhomogeneities in the crystals. The properties of the misorientations were interpreted in terms of the thermal stress during crystal growth and the plastic deformation of alumina single crystal.
The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method
Authors: Arizumi Tetsuya , Kobayashi Nobuyuki
Published: November 2005

The solid-liquid interface shapes are obtained by solving the Laplace's equation computationally assuming a model adequately simplified. The conditions which are indispensable for the crystal growth are mentioned in detail; the interface shape is given as a function of the convective heat loss, the crystal length, the crystal radius, and the crucible temperature for germanium.
There exists a simple relation between the growth rate and the deviation from the flat interface and we can determine the growth rate for realizing the nearly flat interface.
Our results are in qualitatively agreement with the experimental data hitherto obtained. Furthermore it is explained by present results why the dislocation-free crystal can be grown.
Piezoelectric and Elastic Properties of LiTaO3: Temperature Characteristics
Authors: Yamada Tomoaki , Iwasaki Hiroshi , Niizeki Nobukazu
Published: November 2005

Piezoelectric and elastic constants of lithium tantalate single crystal were measured from room temperature up to the Curie point (630°C). These constants were obtained by measuring resonant and antiresonant frequencies of bars and plates with various orientations. Temperature dependence of piezoelectric constants was discussed on the basis of the electrostrictive effect in the paraelectric phase biased by spontaneous polarization. Anomalous behavior of d
33 and d
31 was well explained by the dielectric anomaly of ε
33

T
.
Anomalous Saturation Characteristics of Output Powers of Ar+ Ion Lasers and Influence of Pinch Effects
Authors: Hattori Shuzo , Goto Toshio
Published: November 2005

Pulsed laser oscillation was obtained at a pressure of 15 mtorr with inductive excitation by 10 µsec d–c pulses. When a diaphragm was inserted into the cavity and the 4880 Å peak laser intensity was plotted as a function of peak current, the laser intensity vs discharge current curve shows two maxima. The second maximum seems to be mainly caused by the pinch effect. It is discussed on the basis of current pulse waveforms, and temperatures and densities of the charged particles.
Morphology and Crystallography of Thermoelastic γ' Cu-Al-Ni Martensite
Authors: Otsuka Kazuhiro , Shimizu Ken'ichi
Published: November 2005

Thermoelastic γ' Cu–14.2A1–4.3Ni (w/o) martensite has been studied using the techniques of electron microscopy and electron diffraction, in order to explain the morphology on a microscopic scale. A plane of ridge which is frequently observed in a typical “spear-like” martensite has been identified as (121)γ' twinning plane. Further it has been shown that each half divided by the plane of ridge is internally twinned on {121}γ', other than the (121)γ' plane and each internal twin is faulted on each basal plane.
A new orientation relationship consistent with the morphology is proposed, that is

(110)[11̄1̄]β1
//(121)[21̄0]γ',

according to which the two halves divided by the plane of ridge can be regarded as variants of martensite as well as twins to each other. This feature can be satisfied only by the new orientation relationship. Twinning nature of “spear-like” martensite is also discussed.
Studies on <100> Slip in Fe-2%V Alloy Single Crystals
Authors: Takeuchi Shin
Published: November 2005

In an attempt to measure the critical resolved shear stress for <100> slip of bcc metals, Fe–2%V single crystals were compressed along [110] direction, constraining the side faces, (001) and (001̄), with a pair of fixed walls. Under these conditions, all <111> slips are geometrically expected to be suppressed, and consequently [100] or [010] slip will be activated. Electron microscope study on specimens compressed in the above mentioned manner, however, showed no sign of <100> slip being activated and it was concluded that at room temperature the critical resolved shear stress for <100> slip was over an order of magnitude higher than that for <111> slip.
On Circular Trimming Coils Mounted on Magnet Pole Faces
Authors: Nakanishi Noriyoshi , Motonaga Shoshichi , Miyazawa Yoshitoshi , Karasawa Takashi
Published: November 2005

Effects of circular pole face coils which are mounted on both surfaces of the magnet pole-tips have been investigated. Agreement between the results of experiment and numerical calculation was satisfactory over wide range of change of the magnetic field caused by changing permeability of iron. The magnet pole pieces employed in preliminary and main experiments have profiles of hyperbolic-cosine type and edgeless type, respectively. The pole face coils are useful for correction of the radial distribution of the magnetic field. Such coils are used for the 160 cm ordinary type variable energy cyclotron which has been newly constructed in the Institute of Physical and Chemical Research.
Measurement of Resistance by Means of Electron Beam -III-
Authors: Munakata Chusuke , Watanabe Hiroshi
Published: November 2005

An electron beam technique of measuring resistivity is reported. An electron beam was continuously scanned upon the specimen bar, and the ohmic drop (resistance × electron beam current) was electronically differentiated to get the resistivity. Resultant signal was displayed on a synchroscope screen. The technique was testified by using a GaAs bar whose dimensions were 0.5×0.9×7.0 mm3. The resistivity distribution was measured along the long axis. Energy, current and diameter of the beam were 15 keV, 5.5 nA and about 20 µm, respectively. Maximum resistivity of 4 M\varOmegacm was measured in a measuring time of 10 seconds.
Electron Loading in the Accelerating-Tube of the Electro-Static Accelerator
Authors: Terasawa Michitaka , Takayanagi Sei-ichi , Murata Tohru , Kawai Nawoyuki , Matsuda Yasuhiko , Mori Masashi
Published: November 2005

Measurements of the intensity of X-rays produced by electron loading and of the loading currents were made for two kinds of accelerating-tube of an electro-static accelerator as a function of terminal potential up to 4.0 MV. The distinct threshold and saturation of electron loading are observed in the case of little or no beam current, while they seem to have disappeared at least for one kind of the tube when much more beam is accelerated. It was found that a large fraction of X-rays was emitted as a train of intermittent bursts above the threshold. Duration of each burst was estimated to be about 40 msec. The threshold was raised by increasing gas pressure in the tube, when five kinds of gas–hydrogen, helium, nitrogen, neon and argon–were fed in the tube, and it was found that mono-atomic gases were more effective than diatomic gases.
Effect of Electron Source to Energy Resolution in Electron Velocity Analysis–Interpretation of Boersch Effect–
Authors: Ichinokawa Takeo
Published: November 2005

The energy broadening of an electron beam depended on the beam current, so called “Boersch effect”, was examined by an energy analyzer of a cylindrical magnetic type at an beam energy of 50 kV. The energy analysis was carried out by the caustic method. Even in an electron beam of 60 µA and a current density of 10-1A/mm2, the half width of the energy spread became 0.5 eV by decreasing the divergent angle of the incident beam. This value agrees with the half width deduced from the cathode temperature assuming the energy distribution Maxwellian. Moreover, the line shiftSdue to the variation of the incident angle α was measured by inclining the electron beam from the optical axis, anddS/dα was 1 volt/1×10-4rad. Thus it is concluded that the energy broadening due to the beam current is to be regarded as an effect of the divergent angle of the incident beam. Characteristics of three cathodes,i.e.usual hair pin cathode of tungsten wire, pointed cathode, and oxide cathode are discussed from a view of line broadening.
Precipitation in Ni-12 at. % Ti Alloy
Authors: Saito Kazuo , Watanabe Ryoji
Published: November 2005

Precipitation behaviour in Ni-12 at. % Ti alloy was studied by means of thin foil transmission electron microscopy and electron diffraction technique. Hardness measurements showed two stage age-hardening at 500°C and 600°C. Thin foil observations revealed that the initial rapid increase in hardness was associated with the presence of superlattice. Slower second hardening was caused by the formation of modulated structure or periodic ordered structure. The increase in hardness by these periodic structures was found to be due to the internal strain hardening as originally suggested by Mott and Nabarro.
EPR Study on Surface Properties of ZnS and CdS
Authors: Arizumi Tetsuya , Mizutani Teruyoshi , Shimakawa Koichi
Published: November 2005

The narrow EPR signals originated from the centers near the surface were observed in ZnS and CdS. These signals, appeared by heating the crushed samples in vacuum, have the same g-values of 2.0027±0.0003. Upon exposure to oxygen, the signal height decreases with broadening in the line width through the dipolar interaction of oxygen molecules adsorbed physically onto the surface with the paramagnetic centers. At low temperatures, the signal becomes more sensitive to oxygen and adsorbed water vapour prevents the dipolar interaction of oxygen. The experimental results suggest that the origin of the center is the sulphur vacancy produced during the vacuum heat-treatment.
Boron Diffusion into Silicon Using Elemental Boron
Authors: Okamura Masahiro
Published: November 2005

Boron diffusion into silicon has been investigated by a closed tube method using elemental boron as the source.
Amount of the source, source temperature, and diffusion temperature are the main parameters controlling the surface concentration. It is presumably boron oxide formed by oxidation of the source boron that actually contributes to boron transfer in a closed tube system.
The diffusion coefficient of boron in silicon is given by D=5.1exp
(-85,000/R
T), and its concentration dependence is examined.
The masking effect of silicon oxide against boron diffusion is also examined on the basis of the two boundary diffusion model. The diffusion coefficient of boron in silicon oxide is smaller than that in silicon by three orders of magnitude, and the activation energy of the diffusion is about 36 kcal, which is less than a half of that reported previously.
Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
Authors: Kasami Akinobu , Naito Makoto , Toyama Masaharu , Maeda Keiji
Published: November 2005

Effect of oxygen and tellurium concentrations in the n layer of GaP red-emitting diodes by n-on-p liquid-phase epitaxial growth was investigated. The diodes with an improved external quantum efficiency were reproducibly yielded by oxygen doping in the epitaxial n layer. The optimum oxygen concentration increased with decreasing Te concentration in the epitaxial layer and with increasing Zn acceptor concentration in the p-type substrate. The Zn-O pair concentration in the light-emitting region was determined from the diode photocurrent due to electrons thermally released from excited state induced by the characteristic absorption to the conduction band. It was found that the pair concentration was dependent not only on oxygen concentration, but also on tellurium concentration, in the n layer. The results are explained by a model where the junction is formed in the epitaxial layer due to out-diffusion of zinc during growth of the epitaxial layer and the diffusion coefficient of zinc is dependent on the total donor concentration in the epitaxial layer.
Amplitude Dependent Mechanical Loss due to Domain Wall Motion in Mn-Zn Ferrites
Authors: Kawai Yoriyoshi
Published: November 2005

Young's modulus and mechanical loss in some Mn-Zn ferrites (single crystalline and polycrystalline specimens) are measured at 130 kHz as functions of strain amplitude and temperature. The mechanical loss which is steeply dependent upon the strain amplitude is analyzed as the magneto-mechanical loss due to domain wall motion, because magnetic field is induced by mechanical stress of ultrasonic waves through the invese effect of magnetostriction.
The Rheostatic Thrust Bearing Using a Power Law Fluid as Lubricant
Authors: Shukla J. B. , Prakash Jagdish
Published: November 2005

The use of power-law lubricant in a rheostatic thrust bearing with a variable film thickness is considered. It is found that for maximum load capacity the film thickness function is a step function. In this case a relation between film thickness ratio and step radius is obtained. For a constant film thickness, the load capacity increases as n, the flow behaviour index decreases. However in the case of stepped bearing the maximum load capacity can increase or decrease with respect to n depending on the film thickness ratio.
Density Effect of X-Ray Emission from Porous Specimens in Quantitative Electron Probe Microanalysis
Authors: Ichinokawa Takeo , Kobayashi Hideo , Nakajima Masato
Published: November 2005

Density effect of X-ray emission was found for tablet specimens of various densities. Graphite, Cr2O3, CuO and ZnS, which were less than 1 µm in particle size were used as specimens. The specimen density was changed from about 1 to 4 g/cm3. Electron probe was made into a circle with a diameter of about 10 µm by defocusing on the specimen surface. The results show that the specimen with lower density always gives lower X-ray emission than that with higher density and X-ray intensity from the specimen with the lowest density becomes 70% to 80% of that from a single crystal. To examine the origin of this density effect, experimentalF(χ) curves and a back scattering factorRwere measured as functions of the specimen density. The results show thatf(χ) curves andR-factors scarcely depend on the specimen density, butF(0) factors greatly depend on it. Thus it is concluded that the stopping power of electrons in porous specimens plays an important rôle to the density effect. Lastly, a procedure of correcting for this effect has been suggested.
Dynamic Mechanical Properties of Polyoxymethylene III
Authors: Miki Kyosuke , Yasukawa Jun-ichi , Kaneko Motozo
Published: November 2005

Dynamic mechanical measurements of a drawn polyoxymethylene are performed by a torsion pendulum apparatus over a frequency range of 1.0 to 0.005 Hz at various temperatures in the α-dispersion range. Real and imaginary parts of complex rigidity are measured on each of the specimens cut out from the drawn sample at various angles with the draw direction. The master curves can be composed from the obtained relaxation curves by performing suitable superpositions. The temperature dependence of real and imaginary parts of complex rigidity shows a remarkable anisotropy in the dispersion region. The anisotropy can be interpretted by the concept of “smearing-out effect” of the crystalline field. The shift factor which gives the amount or horizontal translation along frequency axis does not show any anisotropy in the temperature dependence. Both the shape and the frequency position of the composite relaxation curves reduced to the same reference temperature are almost in accordance with each other.
Structure Change of Oriented Polyethylene by Redrawing
Authors: Seto Tsuneo , Tajima Yoshiko
Published: November 2005

This work was made in order to examine the propriety of the structure model of oriented polyethylene proposed by the authors. Drawn and annealed plates of polyethylene showing four point patterns in small angle x-ray diffraction were redrawn along the fiber axis and studied by x-rays. By redrawing the c-axis was made parallel to the redrawing axis, while inclination of lamellae was not changed markedly. The long spacing calculated from the height of the four spots according to the Bragg equation was increased with draw ratio which exceeded slightly the macroscopic draw ratio of the specimen. At high redrawing horizontal streaks appeared in small angle patterns below the spots corresponding to the interlamellar distance. These results are interpreted by the structure model by considering that macroscopic elongation is produced by glide on grain boundaries and inhomogeneous elongation of amorphous layers accompanied with generation of microcracks.
Temperatures during Vacuum Deposition of Metal Films
Authors: Yoda Eiji
Published: November 2005

The radiant energy from a growing Ag film evaporated on a thin formvar substrate was analyzed spectroscopically by means of infrared filters. The ratios of transmitted energies through the filters to unfiltered energies (R.T) from the film were compared with those obtained from a resistance-heated Ag plate. For films less than about 250Å (≡d
0) in average thickness the film temperature can not be defined uniquely, and in films thicker than d
0 the temperature decreases accompanied by a fluctuation as thickness increases. The amount of radiant energy decreases with an increase in residual gas pressure, and the R.T's decrease or remain unchanged for films less than or larger than d
0 in thickness. These results are discussed on the basis of the free electron theory.
Etching of Domains and Dislocations in Ferroelectric NaNO2 Crystals
Authors: Sawada Akikatsu , Abe Ryuji
Published: November 2005

Dislocation etch pits can be formed only on the positive end of the polarization in NaNO2 crystal by ethyl alcohol solution containing a small of amount NaOH. How the concentration of NaOH, NaNO2, and cation of the salt NaOH affect etching process of dislocations, domains, and {121} twins were studied. The positive end etches faster than the negative end in alcohol containing no OH- ion, while in the alcohol solution containing OH- ion the positive end etches slower than the negative end. From the experimental results following conclusions were obtained. (1) The added OH- ion is strongly adsorbed on the positive end of the polarization because of the spontaneous polarization charge, and inhibits the dissolving ions to leave the kink. (2) The adsorption of OH- ions converts the limiting process of dissolution from the volume process to the surface process, resulting in the appearance of dislocation pits.
High Reverse Currents of GaSb and GaAs Tunnel Diodes
Authors: Arizumi Tetsuya , Yoshida Akira , Suzuki Hideaki
Published: November 2005

Reverse currents of GaSb and GaAs tunnel diodes are investigated at temperatures between 4.2 and 290°K up to several hundred times their peak currents. Applying Kane's tunneling theory, the slope of the log
J vs. log
V curve should be nearly equal to 1.0 in low bias range, while it increases with the applied voltage in the middle bias region, depending on the impurity concentration, band gap width, effective mass and others. The experimental results show that the relative magnitude of the current is explained by the theory to a extent over fourth order if the series resistance is correctly taken into account. In very high bias region, the theoretical consideration suggests that the slope of the curve tends to 1.5 in every kinds of tunnel diodes.
Electron Microscopic Observation on Sulphuration of Vacuum-Deposited Silver Films
Authors: Shiojiri Makoto , Maeda Shigeo , Murata Yukio
Published: November 2005

Sulphuration process of vacuum-deposited silver films and orientation relationship between silver and its sulphide were examined by transmission electron microscopy and selected area electron diffraction method. Acanthite (β-Ag2S) crystals grew with a relation of (012)Ag2S//(001)Ag and <100>Ag2S//<100>Ag on the (001) single-crystal surface of silver, and with a relation of (012)Ag2S//(111)Ag and <521̄>Ag2S//<101̄>Ag on the (111) surface. The sulphide crystals were nucleated at random over the silver surface and the dislocations in silver did not seem to play any special role in the nucleation of sulphide. The crystals which appeared at stacking faults or twins were larger than those formed at the other sites. The films were often broken-down and transparent regions were observed. The sulphide crystals became such thick crystals as did not transmit the 100 kV electron beam. The results seem to show that a surface diffusion of silver is very fast even at room temperature and a factor controlling the growth of sulphide crystals.
Far Infrared Resonant Photoconductive Properties in N-Type InSb
Authors: Yamamoto Junya , Yoshinaga Hiroshi , Kon Shōzō
Published: November 2005

Far infrared photoconductivity due to cyclotron resonance in n-type InSb is studied with spectral photo-response under various conditions, that is, magnetic and electric fields, temperatures and carrier concentrations. Two peaks in photo-response are observed near cyclotron resonance frequency. The relative intensity of these two peaks, which come from the transition between Landau levels and that between impurity bands, varies with the change in above conditions. This effect, the carrier-freeze-out effects, is successfully observed in the spectral photo-response and estimated qualitatively.
Absorption spectra of water vapor are measured to show the performances as a far infrared detector. Narrow-band characteristics in photo-response are much useful to reject higher order radiation from the dispersion grating. The superior performances of the InSb resonant photoconductor to Golay detectors are shown from the absorption spectra.
The Physical Meaning of the Factor (R) in Hull's Equation for Photographic Quantitative Analysis with a Mass-Spectrometer
Authors: Grais Khairi I.
Published: November 2005

Following Hull's equation
T

x
=T
∞+\frac{1-T_{\infty}}{1+(n_{x}/n_{0})^{R}}

where n

x
/n
0 is the relative exposure causing a line whose trasmission is T

x
, T
∞ is the transmission of the saturated emulsion and R, as Hull mentioned in his paper, an experimental constant between 1 and 1.5, for ILFORD Q1S4028 as an ion detector in mass-spectrometer, the nature of that constant R is revealed in terms of the energy E of the impinging singly charged ions of mass 40 (amu) i.e.
40
A
+1-ion accelerated by voltages between 3 and 20 Kv. R was found to follow the empirical equationR=c/E

S

and the suggested final equation of Hull's equation is of the form:
T

x
=T
∞+\frac{1-T_{\infty}}{1+(n_{x}/n_{0})^{(c/E^{s})}}

The value of R obtained is considerably dependent on the ion energy E and it decreases with increasing ion energy.
A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis
Authors: Arizumi Tetsuya , Nishinaga Tatau , Kasuga Masanobu , Ogawa Hiroshi
Published: November 2005

A new continuous method for growing epitaxial silicon films of better quality is developed. The principle of this method is based on a thermodynamical result that the H2-SiCl4 system involving seed silicon crystals tends to the growth reaction in a restricted temperature range, while otherwise it tends to the etching reaction. By in situ etching the substrates with H2-SiCl4 just before the deposition, the substrate surfaces can be free from contamination and crystal defects. Immediately after the etching, the epitaxial layers are grown in the same reactor. The deposition or etching rate can be qualitatively estimated from the thermodynamical calculation using the extended quasi-equilibrium model.
Orientation Dependence of Work-Hardening in Iron Single Crystals
Authors: Takeuchi Tomoyuki
Published: November 2005

Iron single crystals with various tensile axes near the [100]–[110] line were extended in the temperature range 153°K to 473°K. The crystals which had their tensile axis within about 10 degrees from the [100] axis showed large work-hardening at low temperatures and the crystals with other orientations showed small work-hardening. It was confirmed from the rotations of tensile axis that four slip systems operated in the [100] type crystals and two systems in the [110] type crystals at low temperatures. At high temperature (473°K), the [100] type crystals showed long and linear work-hardening in the latter stage of deformation and large elongations more than 100%, but the crystals near the [110] axis showed small work-hardening in the latter stage and also small elongations.
Direct Measurement of Photoelastic Coefficients by Ultrasonic Light Diffraction Technique
Authors: Uchida Naoya
Published: November 2005

Absolute values of the photoelastic coefficients have been directly determined using the ultrasonic light diffraction method for water, ethyl alcohol, carbon tetrachloride, fused quartz, KRS–5 and KRS–6. The ultrasonic power at the interaction point with light has been calculated from the short-circuit transfer admittance measured by the pulse-echo technique. The obtained values of the coefficients are in good agreement with the published data, and the validity of the present method for the determination of the coefficients has been well established.
Rotatable Magnetic Anisotropy in Electron-Microscope Specimens of Permalloy
Authors: Hibino Michio , Maruse Susumu
Published: November 2005

The rotatable anisotropy observed in electron microscope specimens of Permalloy is investigated by Lorentz microscopy and torque method. The rotatable anisotropy of this kind is attributed to the thinness of the substrate supporting the Permalloy film, and it disappears when the thick (≥1,100Å) SiO films are used as substrates. Permalloy films evaporated on such thick SiO films can be observed by a high voltage electron microscope and thus it is possible to infer the properties of the films evaporated on glass from those of the electron microscope films.
One-Speed Neutron Wave Propagation with a Source off the Interface
Authors: Baldonado O. C. , Erdmann R. C.
Published: November 2005

One-speed diffusion and transport theory is used to solve the problem of neutron wave propagation in a two-region system. The source is at a finite distance “a” to the left of the interface of the adjacent half-spaces. The solution in both models corresponds to the interpretation of the classical wave problem. The waves propagate till they reach the interface. At the interface, there is a component which is reflected, whereas another component is transmitted. Two coupled singular integral equations were solved simultaneously to evaluate the coefficients. One of the equations is of the Riemann-Hilbert type with discontinuous coefficients.
There exists a discrete separation constant for the diffusion model for all oscillation frequencies. For the transport model, it is seen that there is a limiting frequency above which the discrete waves apparently disappear. Thus, a mixture of discrete and continuum waves, incident to an interface from the left medium may give rise to purely continuum or to a mixture of discrete and continuum waves on the right. Also, it is seen that a purely continuum incident wave may give rise to both discrete and/or continuum transmitted components.
Application of Carbon Dioxide Laser Interferometer to Measurement of Plasma Electron Density
Authors: Miyoshi Syoichi , Shiobara Shinji , Shimizu Tadao
Published: November 2005

The electron density of transient plasma is measured with a Michelson type CO2 laser interferometer. The frequency and amplitude stabilities of the Baser oscillation and the spatial distribution of the laser beam are investigated. The directivity of the laser beam is in accord with the classical diffraction theory in the Fraunhofer region. Although the experimental apparatus is not stabilized against the ambient temperature change, the error of measurement coming from fluctuation of interference signal is less than 0.1 fringe which corresponds to the phase shift produced by a plasma of electron density of 3×1014cm-3 and of length of 3 cm.
La chute de potentiel cathodique d'électrode froide duénérateur M.H.D.
Authors: Ogiwara Hiroyasu
Published: November 2005

Resistivity of the boundary-layer in the MHD generator duct with water-cooled metal electrodes is considered to be the limiting factor of the MHD generating performance.
The voltage-current characteristics were studied by using water-cooled, segmented electrodes. The high resistivity parts of the characteristics were investigated with potential probes. Notable voltage-drop was found both in front or the cathode and the anode.
The voltage-drop in front of the cathode seemed to be saturated beyond a certain value in the current, where thin arcs appeared on the cathode surfaces.
The voltage-drop in this region is well explained by a theory of heat transfer under forced convection.
On the Experimental Determination of the Maximum Range of Monoenergetic Electrons
Authors: Tabata Tatsuo , Ito Rinsuke , Okabe Shigeru
Published: November 2005

Tails of the absorption curves of monoenergetic electrons were measured under various measuring geometries for absorbers of Be, Al, Cu, Ag, and Au at an energy of 15 MeV, and for Al also at 4.1 and 9.8 MeV. The absorber was placed in air and transmitted electrons were detected with an ionization chamber. The curves observed were analyzed with the nth power method to obtain the maximum range. The resulting values were found largely to be affected by the geometry especially in the case of absorbers of high atomic number. It was also found that the tail decays exponentially in the case of the curve observed for Au at the smallest distance between the absorber and the detector. These facts invalidate general use for monoenergetic electrons of the definition of the maximum range given by the nth power method, and a new definition with associated measuring procedure is proposed.
Hydrogen Etching of Silicon Carbide
Authors: Kumagawa Masashi , Kuwabara Hiroshi , Yamada Shoji
Published: November 2005

The etch rate of SiC crystals with hydrogen was investigated as a function of the reaction temperature, the hydrogen flow velocity and the hydrogen partial pressure in the H2-Ar mixture. An etching reaction mechanism and calculated expressions for the etch rate have been developed based on thermodynamical considerations. The experimental results are well explained from the approximate expression at the etch rate region higher than about 3 µ/min.
Gallium Ion Diffusion in Magnesium Oxide
Authors: Katz Gerald , Kachi Sukeji , Roy Rustum
Published: November 2005

The diffusion of trivalent gallium into the rock salt lattice of MgO has been investigated. This has been a first attempt at studying a diffusion process which involves both defect formation and the formation of a new phase, MgGa2O4, with a moving interface. The study was performed on pre-sintered MgO and β-Ga2O3 pellets. The Wagner treatment of Fick's second law was used in the analysis and it was subjected to certain boundary conditions and approximations. The diffusion coefficient was determined from the slope of the linear region of the inverse complementary error function of the concentration as a function of penetration. The departure from linearity in the region of greatest penetration indicates that initially diffusion takes place in the grain boundaries. The region of linear dependence takes place in the later states of diffusion when bulk diffusion predominates. The mean diffusion coefficient as determined from three different anneal times at 1500°C was 7.53±0.25×10-10 cm2/sec.
The Ion-Induced Emission Electron Microscope and an Image Contrast Due to Specimen Contamination
Authors: Uchikawa Yoshiki , Kojima Masayuki , Ichihashi Mikio , Maruse Susumu
Published: November 2005

The ion-induced emission electron microscope is constructed, for which an ion source making use of high frequency gas discharge is developed. This ion source – compared with the conventional one of d.c. discharge–affords a stable, and finely focused ion beam with a high density (3 mA/cm2), besides facilitates regulation of the extracted ion current.
In this emission electron microscope an improved image contrast due to selective contamination is observed on a carbon steel surface. The contrast is attributed to the rate of contamination growth on the specimen surface at its early stage. The rate is found to depend on the kind of bombarding ions and the crystallographical properties of the surface.
On the Electrical and Thermal Properties of the Ternary Chalcogenides A2
IBIVX3, AIBVX2 and A3
IBVX4 (AI=Cu; BIV=Ge, Sn; BV=Sb; X=S, Se, Te) II. Electrical and Thermal Properties of Cu3SbSe4
Authors: Nakanishi Hisayuki , Endo Saburo , Irie Taizo
Published: November 2005

Electrical and thermal conductivity and Hall, Seebeck and transverse Nernst-Ettings-hansen effects have been measured over the temperature range from 100°K to 500°K on Cu3SbSe4. From the temperature dependence of the Hall coefficient, the electron to hole mobility ratio is estimated to be about three. Temperature dependences of the resistivity and the Hall coefficient give an estimate of 0.13 eV for the energy gap at 0°K. The infrared transmission spectra at room temperature also showed a threshold of absorption at about 0.11 eV of photon energy. From the Seebeck coefficient data, the effective mass of holes is calculated to be 0.73 m0. The scattering parameter is determined to be zero over the temperature range studied which is the value expected for acoustic mode lattice scattering. The lattice thermal conductivity varies with temperature as T-1. The dimensionless thermoelectric figure of merit, ZT, is evaluated as a function of temperature and the reduced Fermi level.
Uniaxial Magnetic Anisotropy in Nickel-Iron Thin Films Electrodeposited on Scratched Surfaces
Authors: Satō Masayoshi , Mukasa Kōichi , Maeda Masao
Published: November 2005

The uniaxial magnetic anisotropy constant, K

u
, of nickel-iron thin films electrode-posited on surfaces scratched in one direction was measured to clarify the origin of this anisotropy. The easy axis of the uniaxial magnetic anisotropy in nickel-iron thin films was observed to lie parallel to the scratches and the easy axis of the uniaxial magnetic anisotropy in nickel thin film was observed to lie perpendicular to the scratches.
A simple model is proposed to explain the observed anisotropy. And it is found in this work that K

u
is composed of the shape anisotropy and the magnetostrictive anisotropy and is well expressed as 1/2(N

t
-N

p
)I

s

2+3/2λσsin
2θ. It is also found that in nickel-iron thin films the shape anisotropy plays a significant role, on the other hand, in nickel thin film the magnetostrictive anisotropy plays a significant role.
Eine Phasenumwandlung in Wasser
Authors: Terao Kunio
Published: November 2005

The time variation of the temperature and the electrical conductivity of distilled water in a glass tube during the cooling or heating process was measured around 4°C. Discontinuous changes of specific heat at constant pressure and of electrical conductivity were found. The discontinuity of the specific volume and the coefficient of the thermal expansion at the critical temperature in which water has maximum density was confirmed by measuring the temperature change of water in a steel tube at adiabatic expansion. It was also observed that the critical temperature decreased for solution according to Clausius-Clapeyron's law. These phenomena cannot be explained by the inversion of water density and suggest that a phase transition takes place in water at this critical temperature.
Theory of the Steady Slow Motion of Non-Newtonian Fluids through a Tapered Tube
Authors: Oka Syoten , Murata Tadayoshi
Published: November 2005

A theory of the steady slow motion of non-Newtonian fluids through a tapered tube is presented. It is assumed that the fluid is characterized by a time-independent flow curve and that the tapering angle is very small. It is further assumed that the coefficient of viscosity η which appears in the relationship between the stress and the strain rate of a non-Newtonian fluid is not a constant, but a function of the velocity gradient. General formulae for the shear stress, velocity and flow are obtained. These formulae are similar to those for a straight tube of uniform cross section.
Composite System Comprising As-S Glass and Aluminum
Authors: Maruno Shigeo
Published: November 2005

A composite system has been prepared by evaporating the As-S glass on the aluminum substrate kept at a temperature above the melting point of the glass under the normal pressure in N2 gas. The bonding mechanism between glass and aluminum of the successfully obtained composite specimens was investigated. The constitution of oxide film formed on metal by anodic oxidation and chemical treatment would play an important role for wetting of metal by glass and the adherence between them. Molecular structure of the oxide film and adhesive layer at the interface was examined by means of infrared multireflection technique. The experimental results suggest that the good adherence of glass to metal is attributed to chemical bond formed between PO4
3– molecular groups and the As-S glass.