bluuebunny/crossref_metadata_2025 huggingface dataset:
27.2: Invited Paper: True 3D displays for AR applications
Authors: Li Yan , Liu Shuxin , Zhou Pengcheng , Chen Quanming , Su Yikai
Published: November 2018

Augmented reality (AR) technology, which integrates virtual computer‐generated information into the real world scene, is believed to be the next‐generation human‐machine interface. However, most AR products adopt stereoscopic 3D display technique, which causes the accommodation‐vergence conflict. To solve this problem, we have proposed two approaches. The first is a multi‐planar volumetric display using fast switching polymer‐stabilized liquid crystal (PSLC) films. By rapidly switching the films between scattering and transparent states while synchronizing with a high‐speed projector, the 2D slices of a 3D volume could be displayed in time sequence. We delved into the research on developing high‐performance PSLC films in both normal mode and reverse mode; moreover, we also realized the demonstration of four‐depth AR images with correct accommodation cues. For the second approach, we realized a holographic AR display using digital blazed gratings and a 4f system to eliminate zero‐order and higher‐order noise. With a 4k liquid crystal on silicon device, we achieved a field of view (FOV) of 32 deg. Moreover, we designed a compact waveguide‐based holographic 3D display. In the design, there are two holographic optical elements (HOEs), each of which functions as a diffractive grating and a Fresnel lens. Because of the grating effect, holographic 3D image light is coupled into and decoupled out of the waveguide by modifying incident angles. Because of the lens effect, the collimated zero order light is focused at a point, and got filtered out. The optical power of the second HOE also helps enlarge FOV.
27.4: Hysteresis‐Free Modulation Characteristic and Electro‐Optical Response in Helix‐Free Ferroelectric Liquid Crystals
Authors: Andreev Alexander L. , Andreeva Tatiana B. , Kompanets Igor N. , Zalyapin Nikolay V.
Published: November 2018

The novel helix‐free ferroelectric liquid crystals developed at the Lebedev Physical Institute are characterized with the spatial deformation of smectic layers and soliton mechanism of director reorientation and show fastest electro‐optical response at lowest control voltage. The conditions are studied to increase the frequency interval of hysteresis‐free modulation (was extended to 6 kHz) and the temperature interval, in which the response time is practically constant (it is from 12 to 52 °C now). These FLC materials are very promise for future Field Sequential Color and 3D displays.
28.3: Development of High Performance TFT‐LCD Module for Vehicle Display
Authors: Liang Fei , Sun Lingyu , Chen Xiuyun , Yoon D.K , He Zongze , Du Jingjun , Hou Tingxiu , Fang Liyu
Published: November 2018

The methods to achieve high performance vehicle displays are introduced. In order to achieve high contrast of wide viewing angle, the improvements include: a) the special function polarizer (POL), b) optical alignment process (OA), c) the optimal design of cell gap and d) a specific back light unit (BLU) film structure. Wide color gamut with high saturation is achieved by using the specially formulated light emitting diode (LED) with the specific color filter (CF). A special liquid crystal (LC) can help to come up to quick response time in wide temperature range.
28.4: Stereoscopic Cluster Based on Dual‐layer Display
Authors: Long Bin , Yoon Daekeun , Li Wenyang , Kusama Kentaro , Zhang Zan , Ma Qing , Han Rui , Yu Jie , Chen Ming
Published: November 2018

In this paper, a 12.3inch cluster using a dual‐layer LCD module is proposed. By using two overlapped LCD panels, we demonstrate the ability to achieve stereoscopic animation and high contrast ratio (>4000:1). Meanwhile, a particular diffusion film was introduced to eliminate the Moiré effect induced by the stacked TFT panels.
29.1: On the Display Technology Trends Resulting from Rapid Industrial Development
Authors: Chen Dean , Huang June , Lee Chia-Yu , Lee Yung-Jui , Wu Yuan-Chun , Zhang Xin , Chun Philip , Kim Steve
Published: November 2018

With the massive investment of display industry in recent years, and advancement of the display technologies, the displays have entered our daily life extensively and this will become even more important in the future. The status of major technology trends for TV, mobile phone and flexible AMOLED, that are associated to current display industry are discussed. In order to enhance the user experience, the form‐factor, viewing area and quality of the display have been the common drivers behind different display applications. With the maturity of the technology and supply chain, the emissive display technology, e.g. AMOLED, has grown in market share and become more important in future displays. Innovation of QD and backlight technologies have closed the performance gap between LCD and AMOLED TV. In the mobile space, the trend of display with increased active areas and the rapidly increasing adoption of the flexible AMOLED have become the major trends and have sped up intensive development associated to these directions.
30.1: Transparent Basic Logic Circuits with ITO‐Stabilized ZnO Thin Film Transistors
Authors: Xu Yuming , Wu Zhaohui , Deng Sunbin , Qin Yuning , Zhong Wei , Chen Rongsheng , Li Bin , Wong Man , Kwok Hoi Sing
Published: November 2018

Transparent basic logic circuits integrated by indium tin oxide(ITO)‐stabilized ZnO thin film transistors(TFTs) are successfully fabricated on glass substrate. ITO‐stabilized ZnO thin films with hybrid‐phase microstructure are employed as active layers in the bottom‐contact top‐gated TFTs. We fabricate 13‐stages ring oscillator (RO) with diode‐load and pseudo‐CMOS inverter respectively in order to tell the difference between those two schemes. The pseudo‐CMOS RO exhibits 7V voltage swing and 42kHz oscillation frequency while the diode‐load RO exhibiting 3.3V and 71kHz under the same supply voltage of 20V. Meanwhile, basic digital circuits like NOR gates and D flip flops with pseudo‐CMOS scheme are also fabricated and they are logically correct. Those logic gates exhibit a typical high level of 4.3V, low level of 200mV and maximum operating frequency of nearly 10kHz under the 10V supply voltage. The transmittance of the chip is 80% to 90% in a 380‐nm to 800‐nm wavelength.
33.1: Invited Paper: Electro‐Optical Performance of a Novel Liquid Crystal Material
Authors: Xi Jing-Qian , Ye Lei , Zhu Ji-Liang
Published: November 2018

A novel liquid crystal material named polymer‐stabilized sphere phase liquid crystal(SPLC) is produced. A low concentration polymer template is applied to improve the thermal stability of SPLCs and broadens the temperature range to more than 80 K. The electro‐optical switching time is demonstrated in sub‐millisecond and the electro‐optical properties was shown with a diffraction approach, called extended anomalous diffraction approach. Good agreement between experiment and model is obtained.
33.2: Invited Paper: Advanced in LCD Enabling Materials and Flexible Substrate
Authors: Hu Nan , Ren Xiaofan , Huh Geun , Jung Ju-Young , Han Seok
Published: November 2018

As one of the most important DowDuPont's advanced display enabling materials, the organic passivation film for higher luminance for premium LCD TV, will be presented. This photoresist product can provide both the TFT passivation function and the enhanced process margin. The polyimide substrate materials developed specifically for flexible LCDs will also be discussed.
34.1: Invited Paper: Application of Display technology in Automobile
Authors: Qiu Chengfeng , Liu Zhaojun , Wang Kai , Sun Xiaowei
Published: November 2018

In this paper, the application scene of TN / HTN / YA and TFT‐LCD liquid crystal display technology in automobile is described, including the application of onboard instrument, multimedia, navigator and automobile auxiliary device, and the application of microdisplay LED technology in automobile's head up display. The development trend of auto display and the prospect of LCD technology in automobile are introduced.
34.4: Multi‐functional Automotive Information Integrated System for CID
Authors: Wang Yaoyao , Yu Jie , Sun Pai , Ren Fujian , Wang Xiaoxia , Han Rui , Ma Qing , Yoon Daekeun , Chen Ming
Published: November 2018

BOE has made 12.8 inch automotive information integrated system for CID. The FPD LINK III has been used for long distance transmission. The function of Gesture, Touch and Haptic Feedback has also been integrated in the 12.8 inch automotive CID. In order to make the produce lighter and thinner, the integrated design of middle frame and rear cover has been used.
35.1: Blue‐Diode Laser Annealing of Amorphous Silicon Films for Low‐Cost, Large‐Scale Manufacturing of Advanced Displays
Authors: Park Minok , Hong Seungpyo , Jung Y.H. , Lee Suhui , Rho Yoonsoo , Park H. K. , Grigoropoulos Costas P. , Jang Jin
Published: November 2018

Blue diode laser annealing (BLA) systems have been successfully developed for low‐temperature crystallization from amorphous silicon film on glass substrates. It is demonstrated that it can achieve high quality poly‐Si film with large grain sizes, as studied by optical microscopy, Raman spectroscopy and AFM measurements. The p‐channel poly‐Si TFT on glass using BLA exhibited the field‐effect mobility of 168.05 cm2/Vs and subthreshold swing of 220 mV/dec. BLA is scalable to large‐scale display manufacturing and significantly lowers the capital expense and operating cost, since diode lasers are highly reliable and rugged, remarkably efficient, and maintenance‐free, allowing 24/7 operations without the need of consumables. The BLA system consists of an array of high‐power blue diode lasers (λ ~ 450 nm) and beam‐shaping optics to produce a line‐shaped beam which can be scanned at high speed to anneal the Si film in a single scan, where the high scan speed minimizes thermal stress. The scan‐to‐scan is seamless to cover a large panel such as G6 or G8 without glass damage. The physical phenomena responsible for melting and recrystallization are explained by heat transfer simulations for process optimization.
35.3: Self‐formed nano‐scale metal‐oxide contact interlayer for amorphous silicon tin oxide TFTs
Authors: Ning Honglong , Liu Xianzhe , Xu Hua , Lu Kuankuan , Zhang Hongke , Zhang Xiaochen , Yao Rihui , Fang Zhiqiang , Wang Xiaofeng , Peng Junbiao
Published: November 2018

The formation of metal oxide interlayer is induced by pre‐annealing process in the amorphous Silicon‐Tin‐Oxide thin film transistors (a‐STO TFTs) with Mo source/drain electrodes. Cross‐sectional high‐resolution transmission electron microscopy image confirmed the formation of ~8nm MoOx interlayer. The introduction of MoOx interlayer between Mo electrodes and a‐STO improved the electron injection in a‐STO TFT. Mo adjacent to the a‐STO semiconductor gets oxygen atoms from the oxygen‐rich surface of a‐STO film to form MoOx interlayer. The self‐formed MoOx interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a‐STO layer, which would contribute to the formation of ohmic contact between Mo and a‐STO film.
38.1: Invited Paper: Technical Challenge and Improvement Method of Foldable Display during Cycle Bending Test
Authors: Hu Kun , Yuan Bo , Li Yalong , Dang Pengle , Huang Xiuqi
Published: November 2018

Foldable display has attracted more and more attention due to its light weight and deformable property. However, there is no mass production for foldable display so far, this is mainly because there are lots of technical challenges such as fracture of brittle layer, failure of thin film encapsulation and so on. In this paper, the technical challenge of foldable display is discussed systematically. Then improvement method was used to improve the mechanical reliability of the foldable display. The influence factor of metal line and the failure mechanism of OLED/TFE device were both studied.
39.1: Invited Paper: Novel Photo‐Alignment Material for Ultra‐High Definition VA LCDs
Authors: Tang Qian , Koechlin Manuel , Seiberle Hubert , Zeng Ke , Gu Baohua , Li Shujun , He Fang
Published: November 2018

Ultra‐high definition vertically photo‐aligned LC‐displays inherently suffer from lower backlight transmittance. We proved, experimentally and by simulation, that the transmittance is increased by lowering the pre‐tilt angle. Novel material based on Rolic's proprietary photo‐alignment technology yielding low pre‐tilt angles and high reliability is developed and qualified for mass production by CEC Panda.
39.3: The LCD Technology Development and Application with an Improved Black Photo Spacer Structure
Authors: Zhang Yihe , Liu Minggang , Ye Yanxi , Deng Zhuming , Cao Wu , Li Xuan , Lin Yunglun , Chiu Chungyi , Zhou Hang
Published: November 2018

A novel Black Photo Spacer (BPS) structure is demonstrated in this present work. The black BPS material supports the substitution of black matix (BM) to realize shading function. Thus the BPS technology can integrate BM into PS process, which saves the material, mask, machine and time cost. In order to improve stability, we use full tone mask design. Different height (ΔH) of Main PS and Sub PS are generated by color filter stacking. Polymer film on array (PFA) is used to reduce the excessive primary height between Main PS and Sub PS. In addition, all the patterns included color filter, BM and PS are on array side, which can effectively avoid the backlight leakage and enhance contrast ratio (CR). More discussions of the designs, process and optical performances about 1‐tone BPS such as Data line BM less (DBS) are demonstrated in this paper, and a 28 inch demon with this BPS technology is shown at the end.
41.2: Invited Paper: Fast Switching LC Device for 3D Display
Authors: Lu Jiangang
Published: November 2018

A multi‐electrode Fresnel‐type 2D/3D switchable display with novel structure LC lens is proposed which may achieve faster switching speed and low cross‐talk in the 3D displays by applying a discontinuous non‐uniform electric field. Furthermore, a scanning type 3D display with impulsive driving collimate backlight is proposed to solve the resolution degradation problem and decrease the dynamic crosstalk of 3D perception. A scanning prism with polymer‐stabilized blue phase liquid crystals (PS‐BPLCs) was demonstrated with an impulsive blinking backlight system of high‐resolution 3D display. The fast switching PS‐BPLC prism, whose response time was less than 1 ms, may solve the resolution degradation problem for the autostereoscopic display.
41.5: Head‐mounted Display Based on Surface Relief Grating for Augmented Reality
Authors: Ding Wuwen , Zheng Yu
Published: November 2018

A see‐through head‐mounted display (HMD) is demonstrated in the paper, which can present the user with information such as virtual symbols or images superimposed over real‐world image. To meet the human eyes' visual requirements under different situations, a large exit pupil of 2 to 5 times of the pupil size (about 2.4 mm) is required. To solve the problem, the HMD presented in the paper is a combination of micro‐display of LCoS, imaging eyepiece and an exit pupil expander based on planar waveguide with slanted surface relief grating. Both transmission and reflection gratings are applied in the HMD design. Two system schemes are presented which expand the light only along one direction and two orthogonal directions, respectively. The system configuration and principle of operation are described in the paper.
43.1: Invited Paper: Advances in Flexible Display Materials
Authors: Li Yang , Kim Jae Hong
Published: November 2018

One of the trends in today's Display technology is flexible displays. It enables consumer electronic products to have form factors of being curved, foldable, bendable and rollable. DowDuPont Electronics & Imaging Display Technology has been heavily investing in flexible technologies. It provides liquid polyimide for customers' high‐quality flexible substrates on which display devices are built.
45.2: The effect of photoelastic response on the LCD panel
Authors: Feng Qin , Jiong-liang FU , Zhi-qiang Xia , Shou-fu Jian
Published: November 2018

Attributed to the photoelastic of glass substrate, the light leakage phenomenon of black state occurs to the IPS/FFS liquid crystal display (LCD). In this paper, Jones matrix analysis method is applied to explain the reasons for such undesirable phenomenon and the corresponding optical compensation methods are proposed to minimize it.
48.1: Developments in Fast Cleaning of Thin Films without Wrapping
Authors: Hamilton Sheila
Published: November 2018

In the display industry cleanliness of the materials used to build up the display is vital to avoid defects and most major manufacturers use rubber roller contact cleaning systems to remove any particles of contamination. As the films used in displays and backlights get thinner, this type of cleaning equipment can result in process issues relating to the wrapping of the sheets of film around the contact roller due to a variety of adhesion forces.

This paper reports the development work done on a new cleaning roller system to alter several of the factors affecting the adhesion forces between the roller and the film.

The work reported includes

Developing a new formulation of cleaning rubber to minimise tribocharging of the film

Development of a new functional surface for the cleaning roller to modify the Van de Waals forces between the roller and the film

Minimising the static charge environment within the equipment

This new cleaning system can process sheets of film down to 27.5 microns thick at speeds up to 20m/min without creasing, wrapping or scratching.
48.2: Invited Paper: High conductivity & transparent aluminum‐based multi‐layer source/drain electrodes for thin film transistors
Authors: Yao Rihui , Zhang Hongke , Zheng Zeke , Li Xiaoqing , Zhang Xiaochen , Fang Zhiqiang , Ning Honglong , Deng Yuxi , Peng Junbiao
Published: November 2018

In this work, transparent thin film transistors (TFTs) using multi‐layer aluminum‐doped ZnO(AZO)/Al/AZO/Al/AZO, multi‐layer AZO/Al/AZO, single AZO source/drain (S/D) electrodes were fabricated by room temperature processes on glass substrate. The conductivity, transmittance of S/D electrode films were optimized by the insertion of two 4‐nm‐thick Al layer between the AZO layers. The resistivity of the S/D electrode films decreased from 3.34×10−3 Ω·m to 6.64×10−5 Ω·m and the transmittance higher than 84%. The electrical properties and optical properties of these transparent TFTs were investigated in this paper. The lower work function showed a significant effect on enhancing mobility, increasing on‐state current and output current. As a result, The TFT using the AZO/Al/AZO/Al/AZO S/D electrodes exhibit a saturation mobility of 2.64 cm2/Vs, an Ion/Ioff radio of 2.52×106, a subthreshold swing of 1.14 V/decade, and a transmittance of 71.37%. The successful high‐transparent TFTs with less Indium and less thermal annealing treatment brings industry a step closer to realizing inexpensive, flexible, transparent and green displays.
49.1: Invited Paper: Optical Sensitive Organic Memory Transistors
Authors: Pei Ke , Chan Paddy Kwok Leung
Published: November 2018

This work discusses the electrical properties of the 2,9‐di‐decyl‐dinaphtho‐[2,3‐b:20,30‐f]‐thieno‐[3,2‐b]‐thiophene (C10‐DNTT) organic field effect transistors under different programming conditions. We noticed that the shifting of threshold voltage (Vth) can last for more than 20000 seconds which allows these devices to store information as a memory buffer. These devices can be further integrated into an array form for large area optical signal sensing.
P‐1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back‐channel‐etched a‐IGZO TFTs
Authors: Yang Huan , Zhou Xiaoliang , Zhang Shengdong
Published: November 2018

The back‐channel‐etched (BCE) amorphous InGaZnO thin‐film transistors with different channel widths (Ws) are fabricated. The performance of VTH depends on both channel width (W) and drain voltage (VD) in this work. It is shown that neither W nor VD can create influence in VTH when W or VD is relatively small. However, when both W and VD are large enough, there will be an anomalous phenomenon that VTH increases with the increasing W or the increasing VD. The self‐heating effect can be used to account for this anomalous dependence of VTH on W and VD.
P‐1.2: Photoluminescence and Electrical Properties study of ITO‐stabilized ZnO Thin‐Film Transistors with different annealing temperatures
Authors: Zhong Wei , Li Guoyuan , Deng Sunbin , Yin Xuemei , Lan Linfeng , Chen Rongsheng , Kwok Hoi Sing
Published: November 2018

Bottom‐gate thin‐film transistors (TFTs) with ITO‐stabilized ZnO channel layers were successfully fabricated by co‐sputtering of ZnO target and ITO target. We investigate the effects of the post‐deposition thermal annealing temperature on the defects inside of the ITO‐stabilized ZnO thin film and on the electrical performance of ITO‐stabilized ZnO TFTs. The beneficial effect of various annealing temperature appears because of a reorganization of the amorphous network with controlling the defect chemistry in the films indicated by photoluminescence analysis. ITO‐stabilized ZnO thin film with the annealing temperature of 300°C exhibited less intense defect emission peaks due to reduction in the number of vacancies and interstitials via filling the oxygen vacancies with O2, and diffusion of zinc interstitial to exact sites (VZn) of the system. Furthermore, We systematically investigated the impact of various annealing temperature on their performance characteristics. It was found that ITO‐stabilized ZnO TFT with annealing temperature of 300°C exhibited fairly high electrical characteristics, especially with a saturation field‐effect mobility of 27.4 cm2V−1s−1 and the threshold voltage as low as −0.64 V. The implied correlation between the post‐deposition thermal treatment and the characteristics of a transistor was investigated and demonstrated by photoluminescence analysis.
P‐1.5: Edge Effects of Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor and Their Elimination
Authors: Li Jiapeng , Lu Lei , Xia Zhihe , Wang Sisi , Kwok Hoi-Sing , Wong Man
Published: November 2018

Based on the self‐aligned definition of the active island of a reduced‐mask elevated‐metal metal‐oxide thin‐film transistor with thermally‐induced source/drain regions, the potential issue of the insufficient passivation of the width‐wise edges of the channel has been investigated by varying the thickness of the etch‐stop layer thickness. A thinner etch‐stop layer ensured a better coverage of the edges by the passivation layer, hence eliminating the effects of the parasitic edge‐transistors.
P‐1.9: Characterization of Self‐Aligned Top‐Gate Microcrystalline Silicon Thin Film Transistors
Authors: Zhang Meng , Yan Yan , Deng Sunbin , Zhou Wei , Chen Rongsheng , Wong Man , Kwok Hoi-Sing
Published: November 2018

Self‐aligned top‐gate microcrystalline silicon (µc‐Si) thin film transistors (TFTs) are fabricated and characterized. By replacing high‐temperature SiO2 with low‐temperature SiO2, the performance of self‐aligned top‐gate µc‐Si TFTs can be greatly improved due to the prevention of hydrogen diffusion into the air. The bridged grain (BG) structure is successfully applied to self‐aligned top‐gate µc‐Si TFTs for the first time. By employing the BG doping inside the channel, all device characteristics are improved in self‐aligned top‐gate µc‐Si TFTs.
P‐5.3: A super resolution reconstruction algorithm based on spatial autoregression regularization
Authors: shen Huaming , Xu Meihua , Ran Feng , Li Liming
Published: November 2018

In a lot of micro display applications, we need to enlarge and recognize a region of interest (ROI), which often get a low‐resolution image because of limited resolution source image. This paper proposed a novel image reconstruction algorithm based on spatial autoregression regularization and sparse representation. This reconstruction algorithm trained an image dictionary with the same sparse coefficient by sparse K‐SVD, and then import the autoregressive regularization item to construct the objective function which can realize local adaptive control of the image. In order to obtain further clear image, the degradation model was used which can realize the global constraints. The experimental results show that the proposed algorithm has considerable effectiveness in terms of both objective measurements and visual evaluation.
P‐5.4: Universal Video Enhancement Processing IP Core Design Based on FPGA
Authors: Yu Feng , Tang Yongming
Published: November 2018

Digital image and video processing are widely used in High‐End TV products. For recent high resolution video processing application, FPGA has been the most suitable design platform with its high speed and low latency hardware acceleration method. In this paper, the algorithm of self‐adjusted histogram equalization has been used to realize the application of contrast enhancement for high resolution video, and it has been designed into a universal IP core. With designing hardware acceleration algorithm on FPGA platform, the contrast enhancement operation of 1080p video stream can be realized and the processed video plays smoothly. By optimizing the video process and algorithm, we can achieve better results of video processing, such as higher resolution and frame rate. At the same time, High‐level Synthesis function (HLS) can automatically optimize the RTL to save hardware resources. Because of the better encapsulation of IP core, it can be easily transplanted or solidified in various video products.
P‐6.4: Black photoresist for flexible film with broad taper angle, high OD and very high electric resistivity
Authors: Igawa Akihiko , Lin Chia-Hui , Hsu Ming-Ann
Published: November 2018

This paper introduces black photoresist specially designed for making black layers on flexible film. Flexibility, broad tapered profile, high optical density (OD) and high electric resistance are achieved. The flexibility is suitable for film type devices and the high electric resistivity is likely suitable for black matrix (BM) and micro light emitted diode (LED).
P‐6.7: High Performance, Low Temperature Aqueous Route Calcium‐Doped Indium Zine Oxide Thin Film Transistors
Authors: Li Xuyang , Cheng Jin , Yu Zhinong
Published: November 2018

The high‐performance Calcium‐doped Indium Zine oxide thin film transistors (CIZO TFTs) were fabricated using an aqueous route with low temperature annealing. The effects of different atomic percentages of Ca on electrical performance of TFTs were examined. The experimental results shows that the turn‐on‐voltage (Von) shifts in a positive direction and the off‐current (Ioff) decreases as the Ca content is increased, which attributes to the incorporation of Ca with low standard electrode potential (−2.87 V) and high optical band gap (7.03 eV), when oxidized. The electrical characteristics of CIZO TFTs with an atomic ratio of In:Ca:Zn=6.8:0.2:2.2 are optimized as follows: saturation mobility (μsat) of 2.14 cm2/V•s, threshold voltage (Vth) of 3.00 V, on/off current ratio (Ion/Ioff) of 7.7•106, subthreshold swing (S.S.) of 0.41 V/decade. In addition, the effects of pre‐annealing in N2O‐plasma environment (PA‐N2O‐PE) were also investigated. The electrical characteristics are improved, and the optimized electrical characteristics of CIZO TFTs are observed with an atomic ratio of In:Ca:Zn=6.8:0.3:2.2.
P‐6.10: LTPS‐TFT Process for OLED and some issues generated from the manufacturing
Authors: Li Songju , Yao Rihui , Ning Honglong
Published: November 2018

AMOLED (Active‐matrix organic light emitting diode) is a new display technology used in flat panel display which has wider color gamut, higher contrast ratio, lower consumption than LCD and can achieve flexible display. However, LTPS (Low Temperature Poly‐Silicon)‐TFT (Thin Film Transistor), is now a highlight of Active Matrix Driving. As a current source, in order to drive it, there needs more TFTs and higher driven current for OLED. Compared with the traditional a‐Si TFT, LTPS‐TFT possesses the high mobility (≈100 cm2/V · s) and low off current poly‐silicon's character which is known as being high resolution ratio, quick reacting, wide aperture ratio and high integration. In this paper, we will discuss the common process of LTPS which is made in a relatively low temperature condition. Then we will talk about some display issues caused by LTPS process, such as mura, hysteresis and light spot, e.t.
P‐6.12: Study on subsurface cracks of glass cutting
Authors: Sun Guiyan , Dong Lei , Lu Min , Liu Chunfeng
Published: November 2018

LCD panel has extremely important research significance and practical value in the field of modern engineering because of its excellent display performance, light and thin characteristics. The liquid crystal glass material has the characteristics of thin and brittle, which produces large residual stress in the process of mechanical cutting. There are defects and micro cracks and other debris at the cutting edge, easy to make the glass fragment, resulting in the low rate of finished products. Based on fracture mechanics, this paper focuses on the analysis of the strength of the different crack depths against the external force. According to the material properties, leading force and crack size, fracture toughness values of materials are calculated through pressure test of the glass cutting into different thickness. It lays a theoretical foundation for the study of the following glass cutting technology, and has certain significance for the study of the cutting strength of the liquid crystal display panel.
P‐6.13: Review of Device Defect Related to Environment Contamination in FPD Manufacturing
Authors: Yang Cheng Yu
Published: November 2018

Based on accumulated more than 15 years of cooperation experience with FPD manufacturers on device defect and chemical contamination from environment, a summarized review of device defect related to environment contamination is prepared in this paper. The fact that major contamination source comes from product process itself, that is the so called cross contamination, could be summarized concluded. The experience indicates that a tradeoff between throughput and contamination control during process layout planning would be helpful for future defect defense and control.
P‐9.3: Triple Modulation Visible Light Communications with Pixelated Addressable LED Array
Authors: Lu Tao , Feng Wei , Liu Yibo , Wang Ruoning , Yu Zhiyi , Liu Zhaojun
Published: November 2018

The transmission rate of visible light communication (VLC) system remains low due to the low bandwidth performance of light emitting diode (LED). Therefore, a VLC transmitter, which consists of an LED array integrated with triple modulation technique, is presented. With a 4‐level pulse amplitude modulation (PAM) scheme, the transmission rate of the VLC system is enhanced by about two times. With a second‐order pulse position modulation (PPM) scheme, the transmission rate of the VLC system is enhanced by about two times further. Therefore, four times enhanced transmission rate was got with both PAM and PPM scheme. In addition, it also can be directly compatible with a second‐order pulse width modulation (PWM) dimming control schemes, which can not only control illumination levels to suit for indoor lighting and communication but increase the transmission rate to six times. Then, the constellation design of the triple modulation for equal‐distribution in VLC is studied in this paper. Through simulating in MATLAB software, the results show that without increasing the bandwidth of the device, the data transmission rate of the VLC system in triple modulation are improved and our optimization scheme effectively increases the minimum distance between the constellation points.
P‐9.4: High‐brightness Micro‐LED Matrix for Subfoveal Choroidal Neovascularization Applications
Authors: Qin Lihuan , Xiong ZhaoBin , Zhang Ke , Tang XiaoYing , Sun Xiaowei , Liu Zhaojun
Published: November 2018

Subfoveal choroidal neovascularization (CNV) disease in human fundus is a universal illness which lead to low vision even blind. So there is an urgent need for an effective, noninvasive, accurate and portable probe to diagnosis and treatment. Here, we proposed a new probe design which consists of Micro‐LED arrays with light emission wavelength of 810nm considering its advantage of long lifetime, small size, low power consumption, high brightness and quick response frequency. Besides, we compared circuits in series and hybrid. The results show that hybrid one has a better performance which can greatly cut down the LED heat generation, reduce power consumption, and improve the accuracy of monitoring. A light spot with a diameter of 10mm from the probe will detect macular area disconnectedly to reach noninvasive monitoring. The light output power density(LOPD) of the Micro‐LED array was adjusted between 0.5mW/cm2 to 5mW/cm2 , and only 0.1mW/cm2 to 1mW/cm2 of LOPD arrive to the macular area that ensure no damage to the eyes. This new design is compact and can be attached onto wearable devices such as AR/VR glasses, which is very attractive for mobile medical devices and it will bring great convenience to the biomedical engineering.
P‐9.10: Design and Fabrication of Micro‐lens Array Based on Micro‐LED Projector
Authors: Yan Siwu , Liu Yibo , Wang Ruoning , Zhang Humengyuan , Liu Zhaojun
Published: November 2018

LEDoS(Light Emitting Diode on Silicon) is developing rapidly as a new type of projection technology compared with DLP(Digital Light Processing) and LCoS(Liquid Crystal on Silicon). In addition, Micro‐LED is playing an important role in display and lighting areas because of its high display quality. Therefore, researching and designing a Micro‐LED based LEdoS has obvious advantages in brightness and color saturation, when used in projectors, it can not only completely eliminate the backlight, but also improve the LEE(Light extraction efficiency) by minimizing the optical components. This experiment aims to develop a Micro‐lens array that matches the LEDoS chip and combines the Micro‐lens array with the LEDoS chip to optimize the design by using Tracepro, including the material and shape of Micro‐lens. The Micro‐lens is used to optimize the LED pixels light output angle to reduce color mixing problems between adjacent LED pixels. At the same time the Micro‐lens can also improve the efficiency of LED light coupling, thereby further improving the LED light output efficiency.
P‐9.11: Synthesis and optical properties of CdSexS1‐x nanomaterials with different morphologies
Authors: Zhang Chaojian , Liu Chenxi , Sun Xiaowei
Published: November 2018

The optical properties of colloidal nanometer quantum dots, including fluorescence peak position, fluorescence peak width, fluorescence quantum yield, fluorescence attenuation channel, fluorescence scintillation and brightness of single quantum dots, are determined by the properties of Exciton states, and the properties of Exciton states are closely related to their structure. During the synthesis of CdSexS1‐x Nanomaterials, a series of different morphologies are obtained by controlling the reaction solvent, reaction temperature, reaction time, type and concentration of the reaction ligand and the precursor type CdSeXS1‐x nanomaterial.
P‐9.12: Hybrid Full Color Micro‐LED Displays with Quantum Dots
Authors: Wei Feng , Li Shang , Lu Tao , Liu Yibo , Wang Ruoning , Yan Siwu , Liu Zhaojun
Published: November 2018

Micro‐LED has attracted increasing attention in recent years for its superior advantages of self‐emission, long lifetime, low power consumption, fast response and high brightness. Quantum dot is a kind of nanoparticle with a diameter of 1~10nm. As photoluminescence quantum dot absorbs light over a wide wavelength range and has a narrow emission spectra, it is a perfect color conversion material for Micro‐LED displays when compares with phosphors. In this paper, we propose a full color displays with high brightness blue Micro‐LED array, using red and green photoluminescence quantum dot as the color conversion material. The photoluminescence quantum dot‐based full color Micro‐LED displays we design has a wide‐color‐gamut and low energy consumption.
P‐9.13: Research on the Regulating of Luminescence Region of ZnO‐MgO QLED
Authors: Zhang Xu , Li Qing , Zhang Zhenbo , Yan Shikai
Published: November 2018

Colloidal ZnO‐MgO core‐shell quantum dots (QDs) are synthesized by solution processed method which possess prominent near‐band‐edge UV emission. The electroluminescence characteristics of the ZnO‐MgO quantum dot light‐emitting diode (QLED) are researched with the ZnO‐MgO QDs as emitting layer and PEDOT:PSS, PVK, PMMA as functional layers. The luminescence properties of the conventional and the inverted QLED structures are investigated and compared. And the luminescence region of ZnO‐MgO QLED is regulated by controlling the thickness of each functional layer and the preparation parameters are optimum to promote the UV luminescence contributed from near‐band‐edge emission. The ZnO‐MgO QLED with a luminescence peak at 373nm and a full width at half maximum of 29nm is prepared.
P‐10.1: Foldable AMOLED with Dropping Ball Enhancement
Authors: Liu Renjie , Gao Meiling , Wang Xiangqian , Xu Gusheng , Sun Zhan , Zhu Xiujian
Published: November 2018

Foldable AMOLED display would be one of the most popular display type in the future. However, there are still many challenges that we need to overcome. Dropping ball test is one of the key problems to be solved in foldable OLED display. In this paper, we designed a contrast experiment and found that the cushion materials had an important effect on the dropping ball. The dropping height can improve from 3cm to 15cm when the module is without foam. At the same time, the bending property of module will not be changed.
P‐10.3: A full‐swing inverter based on IGZO TFTs for flexible circuits
Authors: Zheng Jiwen , Han Songjia , Li Minmin , Liu Chuan
Published: November 2018

It is well known that amorphous oxide semiconductors (AOS) are of high mobility and reliable stability, especially indium‐gallium‐zinc oxide (IGZO). It is the most promising material applied in the manufacture of both displays and integrated circuits in the near future. Taking the advantages of electrical and flexible properties, in particular, IGZO TFT has drawn a great amount of attention. In our work, IGZO TFTs are fabricated on the hydroxylated polyethylene terephthalate (PET) substrate at the temperature of 180 °C, which is apparently lower than that in the conventional process. The experimental performance of the IGZO TFTs show that the mobility and on‐off ration are up to 8 cm2V−1s−1 and 105 respectively. In addition, an inverter based on IGZO TFTs has been achieved on the PET substrate, and its gain reaches the value of −20, showing its potential for flexible logic circuits based on oxide TFTs.
P‐12.2: Active Matrix Field Sequential Color Electrically Suppressed Helix Ferroelectric Liquid Crystal for High Resolution Displays
Authors: Shi Liangyu , Srivastava Abhishek Kumar , Cheung Alex , Ho Tsz Kin , Hsieh Chia-Ting , Hung Ching-Lang , Lin Ching-Hsiang , Lin Ching-Huan , Sugiura Norio , Kuo Chia-Wei , Chigrinov Vladimir. G. , Kwok Hoi Sing
Published: November 2018

In this article, we disclose a 3‐inch 250ppi active matrix field sequential color electrically suppressed ferroelectric liquid crystal (ESHFLC) display. ESHFLC's ultra‐fast response time (~10µs at 6.67V/µm) enables the display resolution to be tripled via field sequential color technique. Photo‐alignment technology provides ESHFLC with optimal anchoring energy which contributes to a high contrast ratio over 10K:1. Specific 3T1C pixel circuit is designed to convert the analog signal to pulse width modulation. Thus the field sequential color ESHFLC display is achieved on LTPS TFT panel. With the delivered prototype, we successfully demonstrate the active matrix FSC ESHFLC integrated display system. We believe this display may replace IPS or FFS in the near future for portable mobile market. Moreover, high resolution FSC ESHFLC can find more applications in emerging virtual reality displays.
P‐13.1: Tuning Color‐Correlated Temperature and Color Rendering Index of Phosphorescent White Polymer Light‐emitting Diodes: Towards Healthy Solid‐state Lighting
Authors: Meng Fanyuan , Chen Dongcheng , Xiong Wenjing , Tan Hua , Wang Yafei , Zhu Weiguo , Su Shi-Jian
Published: November 2018

We report on efficient solution‐processed phosphorescent white polymer light‐emitting diodes (WPLEDs) with tunable color‐correlated temperature (CCT) and color rendering index (CRI), through rationally controlling the composition of the emission layer (EML) based on a novel near‐infrared (NIR)‐emitting dinuclear cyclometalated platinum (II) complex (Pt‐1), a sky‐blue emitter iridium (III) bis[(4,6‐di‐fluorophenyl)‐pyridinato‐N,C2] (picolinate) (FIrpic), and a yellow emitter bis[2‐(thieno[3,2‐c]pyridin‐4‐yl)phenyl]iridium(III)(acetylaceton ato) (PO‐01). One of the best three‐color WPLEDs shows a CCT of 3246 K as well as an excellent high CRI of 87, which are greatly beneficial in reducing deep‐blue light damage and simultaneously meet the requirement for good color reproduction. Meanwhile, the relevant WPLED also achieves a maximum current efficiency of 12.1 cd/A, corresponding to external quantum efficiency of 10.6%. This work presents an effective approach through rational combination of sky‐blue, yellow, and NIR emitters towards high‐performance solution‐processable WPLEDs with a physiologically‐friendly CCT and a high CRI.
P‐13.2: AMOLED Encapsulation Technology and Prospect
Authors: Ao Wei , Li Chunhong , Wang Yan , Liu Xiangchao , Xin Xiaogang , Gao Feng , Peng Chaochi , Zhang Jianhua
Published: November 2018

The flexible organic light emitting diodes (OLEDs) has attracted a lot of attention because of its very wide and promising application prospect. The flexible encapsulation is a most problem for mass production of flexible OLEDs since their sensitivity to water and oxygen. Traditional flexible encapsulation using plasma enhanced chemical vapor deposition (PECVD) film as the inorganic layer. However owing to the complicated pattern of sub‐layer and particles, the poor step coverage of PECVD film results in bad encapsulation properties. Therefore the plasma enhanced atomic layer deposition (PEALD) is studied on account of its better step coverage and lower growth temperature. Firstly, the PECVD SiNx process has been researched to achieve the low water vapor transmission rate (WVTR) (WVTR<5*10‐4g m‐2day‐1) and low stress (<‐300MPa). Then we design several flexible encapsulation films with multilayer structures. The PEALD SiOx film is critical in the multilayer encapsulation films to obtain flexible OLED devices with the best air‐stability . Through evaluation of the pass rate after 60oC 90% RH and 85 oC 85% RH for 240h, best structure of flexible encapsulation films has been selected and used in our product.
P‐13.4: Enhancement of top emission white organic light‐emitting diodes with a buffer layer
Authors: Quan Wei , Wu Chang-Yen , Shih Huai-Ting
Published: November 2018

The top‐emitting white organic light‐emitting diodes (TE‐WOLEDs) containing transparent cathode with various structures of buffer layers were developed. The HATCN effectively protects the underlying organic layers from plasma damage during deposition by sputtering, and the optimized thickness was determined by the UV—Vis absorption spectroscopy. The device with 23 nm HATCN showed higher luminance than other devices. A simple and effective method to determine the buffer layer thickness was discovered. The device using the hybrid buffer layer (HATCN /Mg : Ag) showed the lower voltage and longer lifetime than single buffer layer. The reason is that the hybrid buffer layer have excellent contact and plasma protection performance.
P‐13.5: The Influence of HIL Profile on Preparation OLED by Ink Jet Printing Process
Authors: Hou Wenjun , Dai Qing , Song Yingying , Cui Ying , Hu Chunjing , Shih Huai-Ting
Published: November 2018

Two printed films, HIL1 and HIL2 have very different profile within the pixels, due to the substrates used for HIL1 and HIL2 were treated with different condition. HIL1 film is flat and HIL2 film shows “M” shape in the pixel area. Two devices were fabricated with different HIL films profile to study the influence on device performance and luminescence uniformity. Device 1 and 2 with printed HILs (HIL1 and HIL2) and followed by vacuum evaporating HTLs, EMLs showed no significant difference in luminance uniformity within the pixel. But Device 3 and 4 with printed HILs, HTLs and EMLs, showed very different pixel images, which was thought to be resulted by different HIL profile. This paper will disclose the inherent relationship between HIL profile and device light uniformity and be helpful to get high performance printed device.
P‐6.15: Novel Patterning Photoresist for Making TFT Array with Very High Resolution and Controllable Taper Angle by Adjusting Process
Authors: Igawa Akihiko , Shioda Hidekazu , Hsu Ming-Ann , Chung Sheng-Hsuan
Published: November 2018

For making a‐Si TFT array, fast photo‐speed positive photoresist with moderate taper angle profile is preferred. On the other hand, for making poly‐Si TFT, fast i‐line photo‐speed positive photoresist that shows a very vertical profile and has fine resolution is required. Because of the required performance is slightly different in a‐Si and poly‐Si TFT, different types of photoresist are usually used. This paper introduces a novel positive patterning photoresist that might be useful for both a‐Si and poly‐Si TFT manufacturing. This new type of positive photoresist shows fast photo‐speed and its pattern profile is vertical with very fine resolution. Under suitable process conditions, resolution down to 1um line and space is achieved even with contact aligner exposure. At the same time taper angle is controllable by choosing proper process conditions such as prebake temperature, inserting post exposure bake (PEB) process or not.
Bayesian adaptive group lasso with semiparametric hidden Markov models
Authors: Kang Kai , Song Xinyuan , Hu X. Joan , Zhu Hongtu
Published: November 2018

This paper presents a Bayesian adaptive group least absolute shrinkage and selection operator method to conduct simultaneous model selection and estimation under semiparametric hidden Markov models. We specify the conditional regression model and the transition probability model in the hidden Markov model into additive nonparametric functions of covariates. A basis expansion is adopted to approximate the nonparametric functions. We introduce multivariate conditional Laplace priors to impose adaptive penalties on regression coefficients and different groups of basis expansions under the Bayesian framework. An efficient Markov chain Monte Carlo algorithm is then proposed to identify the nonexistent, constant, linear, and nonlinear forms of covariate effects in both conditional and transition models. The empirical performance of the proposed methodology is evaluated via simulation studies. We apply the proposed model to analyze a real data set that was collected from the Alzheimer's Disease Neuroimaging Initiative study. The analysis identifies important risk factors on cognitive decline and the transition from cognitive normal to Alzheimer's disease.