bluuebunny/crossref_metadata_2025 huggingface dataset:
Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure
Authors: Tyschenko Ida E. , Cherkov A.G. , Voelskow M. , Popov V.P.
Published: March 2009

The behavior of Sb and In atoms embedded into silicon-on-insulator structure (SOI) near
the bonding interface was investigated as a function of annealing temperature. Two kinds of the ionimplanted
SOI structures were prepared. First kind of the structures contained the buried SiO2 layer
implanted with In+ and Sb+ ions near the top Si/SiO2 interface. In second kind, the ion-implanted
regions were placed on each side of the bonding interface: Sb+ ions were implanted into Si film; In+
ions were implanted into SiO2 layer. Rutherford backscattering spectrometry (RBS) and crosssectional
high-resolution electron microscopy (XTEM) were employed to study the properties of the
prepared structures. The formation of InSb nanocrystals was observed within the SiO2 bulk from
first kind of the SOI structures as annealing temperature increased to 1100o C. In the case of the
double side implanted SOI structures, an increase in annealing temperature to 1100o C was
accompanied by the up-hill diffusion of In atoms from the SiO2 bulk toward the bonding interface
and by the endotaxial growth of InSb nanocrystals on the top Si/SiO2 interface. It was concluded
from the experimental results that Sb atoms were the nucleation centers of InSb phase.
Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
Authors: Kveder Vitaly V. , Orlov Valeri I. , Khorosheva M. , Seibt Michael
Published: March 2009

We investigated the development of dislocation-related DLTS spectra in n-CZ-Si
crystals with small (about 7.104 cm-2) number of long individual dislocations depending on the
distance L that dislocations traveled during deformation at 600oC and on the velocity of
dislocations. We found that a typical dislocation-related DLTS signal appeared only when
dislocations traveled a significant distance that is more than 150-200μm, and it depended strongly
on dislocation velocity. The results were interpreted on the assumption that the DLTS signal
corresponds to some core defects and atomic impurities accumulated on the dislocations during
their slow motion. At high concentration of deep level defects on dislocations a strange “negative
DLTS” signal was observed. This can be explained by electron tunneling between deep defects
along dislocations.
Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon
Authors: Tereshchenko A.N. , Steinman E.A.
Published: March 2009

In this paper we present a detailed investigation of peculiarities of dislocation related
D1/D2 bands behavior in silicon doped with Cu. For this purpose float zone grown (FZ) p-type
silicon with B-doping 2.85·1015cm-3 was deformed by 3-point bending method at 950flC up to
dislocation density of 2±0.2·106 cm-2. The deformed samples were contaminated with Cu up to
several concentrations from 6·1013 cm-3 to 5·1016 cm-3. The variation in dislocation related spectra
were traced after different thermal treatments. A decrease of D1/D2 bands intensity in quenched
samples was observed even after their storage at room temperature. Taking into account the fact that
Cu has a high mobility even at room temperature the decrease of D1/D2 bands intensity can be
attributed to passivation of corresponding luminescence centers by Cu atoms. The influence of Cu
contamination on D2 band is much more complicated as compared to D1 band. New line in position
about 883 meV was observed as a result of storage of samples at room temperature and subsequent
isochronous anneals. It was observed that D1/D2 band luminescence sharply increased in 30K –
50K range in samples with high Cu doping level. In addition the line in about 830 meV position
became stronger at these temperatures whereas its intensity was negligible at 6K.
Engineering of Dislocation-Loops for Light Emission from Silicon Diodes
Authors: Mchedlidze Teimuraz , Arguirov Tzanimir , Kittler Martin , Hoang T. , Holleman Jisk , LeMinh P. , Schmitz Jurriaan
Published: March 2009

Luminescence properties of silicon light emitting diodes with engineered dislocation loops were
investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical
p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band)
and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band
signal intensity were performed. The results are in agreement with the model for dislocation
luminescence, which suggests rediative transition between two, dislocation-related shallow levels.
A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier
injection level in electroluminescence and photoluminescence. A supposition about existence of
strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely,
in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected
charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the
data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak
at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.
Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers
Authors: Saad Anis M. , Zinchuk Olga V. , Drozdov N.A. , Fedotov A.K. , Mazanik A.V.
Published: March 2009

The main goal of this work is to investigate the influence of low-temperature argon ionbeam
treatment on the electric and structural properties of a near-surface region of the standard
commercial p-type Cz Si wafers, and to compare the effects of Ar+ and H+ ion-beam treatment. The
measurements of thermo-EMF have shown that both Ar+ and H+ ion-beam treatment with the ion
energy 200 eV and current density 0.15 mA/cm2 at a temperature of 30 oC during 30 min leads to
the p-to-n −type overcompensation of the near-surface layer of silicon wafers. The measurements of
photovoltage spectra have shown that (i) Ar+ and H+ treatments in like manner lead to the
appearance of a photovoltage signal over a wide spectral region due to the formation of p-n-junction
on the treated surface, and (ii) photosensitivity of the Ar+ ion-beam treated wafers in the ultraviolet
(UV) spectral region (200-400 nm) is much greater as compared to the wafers subjected to H+ ion
beam treatment in the same conditions. The main difference in the Ar+ and H+ ion-beam treatment
effects is the formation of a thin (5-20 nm) oxygen-containing dielectric layer on the surface of
hydrogenated samples and the absence of such layer in case of Ar+ ion-beam treatment.
IR Studies on the Interaction between Thermal and Radiation Defects in Silicon
Authors: Londos Charalamos A. , Antonaras G.D. , Potsidi M.S. , Sgourou Efstratia N. , Antonova I.V. , Misiuk Andrzej
Published: March 2009

Fast neutron irradiations on pre-treated Cz-grown silicon were carried out. The pretreatments
involved thermal anneals at 450 oC and 650 oC under high hydrostatic pressure. We
mainly examined, by means of IR spectroscopy, the effect of pre-treatments on the production of
the oxygen-vacancy (VO) pair. The amplitude of the VO band was found independent on the 450
oC treatment although the amplitudes of the TDs bands were reduced. On the other hand, the
amplitude of the VO band was found lower in the samples treated at 650 oC, indicating an influence
on the production of the oxygen-vacancy defects. The results are discussed and explanations are
suggested concerning possible interactions between thermal and radiation defects.
Evolution of Thermal Donors in Silicon Enhanced by Self-Interstitials
Authors: Voronkov Vladimir V. , Voronkova G.I. , Batunina A.V. , Falster Robert J. , Golovina V.N. , Guliaeva A.S. , Tiurina N.B. , Milvidski M.G.
Published: March 2009

The time dependence of thermal donor (TD) concentration, N(t), during annealing at
450oC was measured in samples cut from a single slab of silicon containing bands of grown-in
microdefects of different types. An enormous impact of the microdefect type on the kinetic curve
was observed. Samples from the interstitial region showed simple linear rise in N(t). The samples
from an inner part of the vacancy region showed a complicated oscillating variation with an abrupt
disappearance of the TDs at some moment followed by an immediate restoration of a linear rise. In
samples from the marginal H-band of the vacancy region, an initial anneal does not produce TDs.
However if this anneal was followed by a quench, subsequent anneals produce a linear rise in N(t).
On the other hand, if the sample was slowly cooled, the subsequent production of TDs remained
almost negligible. These observed peculiarities are accounted for by enhanced TD growth in the
presence of self-interstitials (I) - due to IO species serving as vehicles for oxygen transport.
Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing
Authors: Zhu Xin , Yang De Ren , Li Ming , Cui Can , Wang Lei , Ma Xiang Yang , Que Duan Lin
Published: March 2009

The thermal donor formation at 425oC - 450oC in Ge doped Czochralski (GCZ) silicon
having about 1016 cm-3 Ge content pretreated by rapid thermal annealing (RTA) and conventional
furnace annealing (CFA) has been investigated using low-temperature infrared spectroscopy
(LT-IR). The measurements prove that lightly Ge doping can enhance the formation of thermal
double donors in the initial stage of the low temperature annealing after RTA process. Ge induced
additional grown-in oxygen precipitates during silicon ingot growth and the abundant
self-interstitials during RTA may be the reason for the enhancement. However, after extending the
annealing time at the low temperatures, the thermal donor concentration in the GCZ silicon is lower
than that in the conventional CZ silicon. In final, the mechanism is also discussed.
Study of Gettering Mechanisms in Silicon: Competitive Gettering between Phosphorus Diffusion Gettering and Other Gettering Sites
Authors: Shabani Mohammad B. , Yamashita T. , Morita E.
Published: March 2009

The effectiveness of phosphorus diffusion gettering (PDG) and related segregation coefficients for different
metal impurities were measured applying thermal treatments in the temperature range 800-950 °C for different times.
We used multi-crystalline and mono-crystalline CZ p-type wafers with different boron concentrations and different
levels of dislocations and bulk micro-defects (BMD). In all sample types, for Cu and Ni we found complete gettering in
the temperature range investigated. In the case of Fe, the segregation coefficient increases with both increase in
temperature and extension of time. The increase is qualitatively changing when going above 900 °C. At 950 °C the
segregation coefficient increases faster at shorter diffusion time but at extended diffusion time it increases slower as
compared to diffusion at 900 °C. At the same temperature and time of phosphorus diffusion the segregation coefficient is
found to be independent of the metal impurity concentration in the range of 1012-1015 cm-3 investigated. We have shown
that the presence of BMD and dislocations in bulk silicon does not impede the ability of PDG to completely remove Fe,
Ni and Cu metal impurities from the bulk. Further analysis suggests that the PDG has the same gettering efficiency for
mono-crystalline silicon and multi-crystalline silicon. We conclude that if any bulk precipitation of Fe, Ni and Cu
impurities is present in multi-crystalline silicon it cannot seriously compete with PDG. However we found that
increasing the boron concentration in the samples reduces the segregation coefficient of Fe, and this reduction is more
severe at lower temperatures. Finally, by applying a post anneal ramp down from 900 °C to 700 °C after phosphorus
diffusion, we found that the Fe segregation coefficient increases by a factor of 36 for lightly B doped samples, from 53 to
1919, leading to a significant reduction of Fe in the bulk after 2 hours ramp down anneal.
Silicon Epitaxial Layers for CCD and CMOS Imager Sensors : Limits and Challenges of the In-Line and Off-Line Metal Detection Techniques
Authors: Borionetti G. , Cox S. , Godio P. , Gohar I. , Pitney J. , Seacrist M.
Published: March 2009

The need of an effective control of residual metal content inside the silicon epitaxial
wafers is revamping for CCD and CMOS applications, which are very sensitive to small amount of
heavy metals. The paper will discuss the strengths and the challenges associated to the integrated
use of well known electrical techniques when metals like iron and molybdenum are present in
concentration lower than 1E11 cm^3.
Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates
Authors: Volodin Vladimir A. , Efremov M.D. , Kachurin G.A. , Kochubei S.A. , Cherkov A.G. , Deutschmann M. , Baersch N.
Published: March 2009

Thin (90 nm) a-Si:H films on Corning 7059 glass substrates have been crystallized by
120 fs pulses of Ti:sapphire and nanosecond pulse XeCl and KrF excimer lasers. Initial films were
deposited using low-temperature plasma enhanced deposition technique. The structural properties of
the films were characterized using the spectroscopy of Raman scattering, excited by the argon laser
(line 514.5 nm) and using electron microscopy. For the femtosecond pulse treatments the ablation
threshold was found to be some more than 65 mJ/cm2. When pulse energy density was lower than
~30 mJ/cm2 no structural changes were observed. In optimal regimes the films were found to be
fully crystallized with needle grain structure, according to the Raman scattering and electron
microscopy data. Estimates show the pulse energy density was lower than the Si melting threshold,
so non-thermal “explosive” impacts may play some role. The main result in nanosecond XeCl and
KrF laser pulse crystallization is the narrower window between beginning of crystallization and
ablation for KrF laser (wavelength 248 nm) than for the XeCl laser (wavelength 308 nm). So, the
possibility of the femtosecond and nanosecond laser pulses to crystallize a-Si films on non
refractory glass substrates was shown. The results obtained are of great importance for
manufacturing of polycrystalline silicon layers on non-refractory large-scale substrates for giant
microelectronics.
EBIC Investigations of Deformation Induced Defects in Si
Authors: Yakimov Eugene B.
Published: March 2009

Calculation of relation between the EBIC contrast and the recombination strength for
dislocations and quasi-two-dimensional dislocation trails has been carried out taking into account
the real values of depletion region width. Using the relations obtained the linear defect density along
dislocations and sheet density in dislocation trails are estimated. The results of EBIC investigations
of dislocations and dislocation trails in plastically deformed n- and p-Si are analyzed.
Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics
Authors: Sobolev N.A.
Published: March 2009

Single crystal Si, Si0.948Ge0.052 and Si0.66Ge0.34 diode as well as Ge transistor structures
with high electroluminescence (EL) intensities in the region of interband transitions at room
temperature were fabricated by different techniques and their luminescence properties were studies.
The analysis of the experimental data shows that recombination involving excitons is the dominant
mechanism of near-band edge radiative recombination in all the light-emitting structures at room
temperature. Some of the structures are characterized by record values of EL intensity and/or
external quantum efficiency, so they can be used as effective light emitters for Si optoelectronics.
The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon
Authors: Steinman E.A. , Tereshchenko A.N. , Abrosimov Nikolay V.
Published: March 2009

The samples of p- and n-doped Fz Si were deformed in 3-point bending mode in the
temperature range 800-950flC. Dislocation related PL (DRL) spectra were measured at temperature in
the range 4.2 – 200K. Several features of DRL turned out to be sensitive to donor level doping. First,
the low energy components of D1/D2 bands disappear at middle and high doping level. Second, the
intensity of D1 band showed much more dependence on the donor doping level than other DRL bands
and almost disappeared at the concentration of donors around 1017cm-3. Finally, it has been found that
the temperature variation of the D1/D2 line positions depend on the donor doping level. Namely, at the
donor concentration higher than 1015cm-3 the D1/D2 bands demonstrate the blue shift when the sample
temperature goes up from 4K. At higher temperature the band positions more or less follow the
temperature behavior of the band gap. The effect does not depend on chemical nature of donor except a
value of ionization energy. No such behavior has been observed for different levels of acceptor doping.
Taking into account that the ionization of shallow donors happens in the temperature range of above
30K, the effect of blue shift has been attributed to the influence of free electrons released from donors.
Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p+/n Si1-XGex Source/Drain Junctions
Authors: Kamruzzaman Chowdhury M. , Vissouvanadin B. , Bargallo Gonzalez Mireia , Bhouri N. , Verheyen Peter , Hikavyy H. , Richard O. , Geypen J. , Bender H. , Loo Roger , Claeys Cor , Simoen Eddy , Machkaoutsan V. , Tomasini P. , Thomas S.G , Lu J.P. , Weijtmans J.W. , Wise R.
Published: March 2009

This paper presents an investigation of the impact of a Highly Doped Drain (HDD)
implantation after epitaxial deposition on Si1-xGex S/D junction characteristics. While the no HDD
diodes exhibit the usual scaling of the leakage current density with Perimeter to Area (P/A) ratio,
this is not the case for the HDD diodes, showing a smaller perimeter current density JP for smaller
window size structures, corresponding with larger P/A. This points to a lower density of surface
states at the Shallow Trench Isolation (STI)/silicon interface, which could result from a lower
compressive stress. In order to examine the role of the HDD implantation damage, Transmission
Electron Microscopy (TEM) inspections have been undertaken, which demonstrate the presence of
stacking faults in small active SiGe regions. These defects give rise to local strain relaxation and,
therefore, could be at the origin of the lower STI/Si interface state density. The window size effect
then comes from the active area dependence of the implantation defect formation.
The Effect of Ag Diffusion Barrier on the Microstructure of a Titanium Dissimilar Joining
Authors: Lee Min Ku , Lee Jung G. , Lee Jong Keuk , Park Jin Ju , Uhm Young Rang , Rhee Chang Kyu
Published: March 2009

In this study, joining characteristics of dissimilar Ti and Cu metals have been investigated, when using both an Ag-based eutectic alloy as a filler and an Ag layer present on Ti base metal as a diffusion barrier. The observed microstructures were classified into three characteristic types, depending on the presence of a Ag layer at the Ti interface, e.g. first, the sample retaining thick continuous intermetallic layers, e.g. Ti2Cu, TiCu, Ti3Cu4, Ti2Cu3, and TiCu4 by a significant dissolution of the Ti atoms into the molten filler, in the absence of a Ag coating layer onto the Ti base metal, second, the sample with relatively thin Ti-Cu intermetallic layers by the reduced reaction of Ti with Cu due to a prominent decrease in the Ti dissolution, owing to the role of the Ag coating layer as a diffusion barrier, and finally, the sample without any brittle Ti-Cu intermetallics in the joint by a complete suppression of both the dissolution of the Ti atoms and its reaction with the Cu elements in the molten filler due to the presence of a Ag layer.
Removal of Hexavalent Chromium on Chitosan-Deposited Activated Carbon
Authors: Lee Jeong Min , Palanivelu K. , Lee Young Seak
Published: March 2009

This research involved the deposition of chitosan on the surface of activated carbon(AC)
to get an adsorbent(CS-AC) to removal Cr(VI) from aqueous solution. Each adsorbent used in this
study was characterized using BET specific surface analyzer, FT-IR and elemental analyzer. Batch
experiments were conducted to determine the removal efficiency of Cr(VI). Chitosan was
physically adsorbed on the surface of the AC and the removal efficiency of CS-AC was greater than
that of raw activated carbon(RAC), suggesting that the surface modification of AC by chitosan
provides more adsorption sites on their solid surface for Cr(VI) adsorption.
Studies on Effect of Nano-Talc Filler on Nucleation, Crystal Morphology and Crystallization Behaviour of Semi-Crystalline Plastics
Authors: Akhtar S. , Shukla D. , Kumar V.
Published: March 2009

The crystallization behavior of semi-crystalline plastics plays a vital role in the development
of properties of plastics. The present study examines the effect of addition of 1-5% nano talc
filler particles on the nucleation behavior and crystal morphology. Differential Scanning
Calorimetry was used to study the dynamic crystallization kinetics of PEEK with different
loadings of nano talc filler. The crystalline morphology and non-isothermal kinetics were
investigated. Crystallization behaviour was studied using Avrami equation. It is found that the
addition of nano-talc enhances the rate of nucleation; however, the growth rate of the crystals
reduces.
Application of Power Ultrasound in Cavitation Erosion Testing of Nano-Ceramic Particle/Polymer Composites
Authors: Gopi K.R. , Nagarajan R.
Published: March 2009

Cavitation erosion is predominant in pipelines for liquid transportation, causing
damage to pipe wall, impeller and their accessories. The present study is focused on
development of cavitation -wear resistant nano-ceramic particle-reinforced polymer
matrix material; and on study of its feasibility to be used as lining material in hydraulic
transportation. The polymer/nano composite is fabricated using power ultrasound in all
three process steps: synthesis of nano-dimensional particles of white fused alumina
(WFA) from micron size particles, optimized blending and finally reinforcement into
poly methyl methacrylate (PMMA) matrix. The effect of ultrasonic parameters on nanocomposite/
virgin polymers (like polyethylene and polypropylene) is studied by
measuring mass loss of the materials and suspension turbidity during exposure time. At
low frequency (20-60 kHz), cavitation intensity is predominant; this effect is utilized for
fabricating sub-micron particles, and for performing accelerated cavitation erosion tests.
At high frequency, acoustic streaming is predominant; this effect is utilized for blending
and reinforcing of the nano ceramic particles into polymer matrix. The size and quantity
of the particles generated by cavitation erosion was analyzed by Laser Particle Size
Analyzer (20 nm-1400 micron range). The nano-composite coupons were analyzed
before and after the ultrasonic erosion test using SEM. It is concluded that lowfrequency
sonication is a viable option for cavitaton erosion testing of ceramic/polymer
composites.
Structural Evolution of Al-Cr Alloy during Processing
Authors: Vojtěch Dalibor , Michalcová Alena , Novák Pavel
Published: March 2009

Aluminium-chromium based alloys are promising candidates for manufacture of light
components exposed to elevated temperatures. The work describes properties of Al-6.0wt.%Cr-
2.1wt.%Fe-0.5wt.%Ti alloy. The rapidly solidified powder was prepared by the pressure nitrogen
melt atomization. The powder was then subject to heat treatment in order to investigate solid state
phase transformations. Compaction of the powder was carried out by hot extrusion after preheating
at 450 °C. Microstructure, phase composition and structural transformations on heat treatment were
investigated in the as-atomized powder, as well as in the as-extruded alloy. It is found that
metastable state of the rapidly solidified powder is characterized by presence of quasi-crystalline
phases and supersaturated solid solution. Heating before and during the hot extrusion induces
decomposition of the supersaturated solid solution and quasicrystalline to crystalline phase
transformations. The hot extruded alloy has a refined recrystallized structure that remains very
stable aven after long-term annealing at 400 °C. Mechanical properties of the extruded alloy are
discussed in terms of strengthening mechanisms.
Effects of Omega Phase on Elastic Modulus of Ti-Nb Alloys as a Function of Composition and Cooling Rate
Authors: Aleixo Giorgia T. , Afonso C.R.M. , Coelho A.A. , Caram R.
Published: March 2009

Titanium alloys comprise a versatile class of biomedical materials. Among them, β- titanium alloy is one of the most promising metallic materials for biomaterial applications thanks to their high mechanical strength, good corrosion resistance and excellent biocompatibility. This study purported to analyze the phase stability in Ti-Nb alloys, evaluating the influence of the Nb content on the microstructure obtained under different heat treatment conditions. To this end, Ti-Nb alloys containing 5 to 35% (wt.%) of Nb were prepared and evaluated. The samples were arc melted and characterized using optical microscopy, transmission electron microscopy and X-ray diffraction. Young’s modulus was evaluated primarily by acoustic techniques.
A Model for Estimation of Mould Thermal Fatigue Life in Permanent Mould Casting
Authors: Kayikci Ramazan , Durat M. , Nart E. , Ozsert I.
Published: March 2009

In this study, using materials thermo-physical data and CAD/CAE techniques the thermal
fatigue life of a permanent mould is estimated. 3D solid models of the mould-casting system
consisted of a permanent mould made from grade 60 ductile iron and an aluminium 7% Si, 0.3 %
Mg Casting alloy (A356) were constructed in a CAD system. After defining all boundary and
initials conditions in a finite element environment a thermal solution of the permanent mould
casting is achieved repeatedly for every cycle until the steady-state temperature change is reached.
The elastic-plastic stress calculation is performed by using the thermal history obtained from the
thermal analysis. At the end, the residual stresses are determined and used for the thermal fatigue
life estimation. The results showed that using the proposed CAD/CAE techniques the fatigue life of
a permanent mould can be estimated.
Complementary Metrology within a European Joint Laboratory
Authors: Nutsch Andreas , Beckhoff Burkhard , Altmann Roswitha , Van den Berg J.A. , Giubertoni D. , Hönicke Philipp , Bersani M. , Leibold Andreas , Meirer F. , Müller Matthias , Pepponi G. , Otto Michael , Petrik P. , Reading M. , Pfitzner Lothar , Ryssel Heiner
Published: March 2009

The continuous dimensional reduction drives the development of metrology, analysis and characterization for nano and micro electronics. An enormous worldwide R&D effort focuses on the understanding and controlling materials properties and dimensions at atomic level. Crucial for groundbreaking new developments is the availability of appropriate analytical infrastructures providing techniques with information depths well adapted to the nanoscaled objects of interest. This requires widely accessible, independent complementary metrology, analytical techniques, and characterization. For example new materials and the demand of improved detection sensitivities for contaminants provide huge challenges for the capabilities of current analysis equipment and expertise. At the same time, the availability of complementary competences is crucial for advancement of analytical methodologies through cross-comparison, round-robin, and benchmarking of results. This paper describes the formation of an independent analytical infrastructure within Europe having the expertise and competence to solve metrology problems for development of nanotechnologies. Furthermore, a strategy is shown to establish independently operating ‘Golden Laboratories’ for complementary and reliable metrology, analysis, and characterization adapted to the requirements of industrial partners.
Agent-Component Design of Smart Appliances
Authors: Ostaseviciute Laura , Kazanavicius Egidijus
Published: March 2009

The key objective of the research, presented in this paper, is one of the integral parts of the intelligent home – smart domestic appliances. The principal aim is to propose a method for designing smart mechatronic appliances. Such systems assist the user and augment the quality of living through the integration of services and technology. An agent-component based approach is used to design a generic agent model, which serves as a common infrastructure for constructing smart appliance systems. Finally, an intelligent refrigerator is presented as a perspective of the proposed method application.
High-Precision Gas Sensor Based on Photonic Bandgap Fiber Cell
Authors: Pawłat Joanna , Li Xue Feng , Sugiyama Tadashi , Matsuo Takahiro , Zimin Yurij , Ueda Toshitsugu
Published: March 2009

As one of applications for Microstructured Optical Fiber, a new device for measurement of low gas concentration was designed. In the developed system the Photonic Bandgap Fiber (PBGF) was used as a gas cell. Proposed technique allowed reducing gas sample volume to 0.01 cc. The gas flow inside core of fiber was simulated and result was confirmed experimentally. During the experimental work several types of fibers of various parameters were specially designed, produced and used. Core diameters ranged from 10.9 μm to 700 μm. Various cutting techniques for fibers such as using the fiber cleaver, Focused Ion Beam and Cross Section Polisher were investigated.
Automatic Gear Shift Unit
Authors: Jantos Jerzy , Prażnowski Krzysztof , Mamala Jarosław
Published: March 2009

Automatization of gear shift and number selection in passenger cars with stepped transmission result in improvement of driving safety due to concentration of driver’s attention on the conditions of the traffic [1, 3]. Besides, the car can be used by a disabled person. The most important benefit of the projected solution is associated with reduction in fuel consumption resulting from the more economical selection of the transmission ratio [4, 5, 7]. The gear number choice depends on many factors, for example: traffic conditions, temporum vehicle and engine rotational speed as well as engine load. It is very often the case that even a driver with experience can face problems with optimal decisions. Automatically controlled system with suitable algorithm can reduce fuel consumption and improve the vehicle drivability. The system named MeGSS (Mechatronic Gear Shift System) has been developed for this purpose. It was subsequently tested in a passenger car equipped with five-step gear box. In the car the MeGSS is responsible for engine start process and the gear shift procedure. In this system the manual (M) and automatic (A) gear ratio control is possible. The gear shift procedure is connected with electronic throttle control algorithm, which promote smooth power transmission [2, 6].
Simulation of Hydrodynamics Processes of Hydraulic Braking System of Vehicle
Authors: Bogdevicius Marijonas , Janutėnienė Jolanta , Vladimirov Oleg
Published: March 2009

The 3D vehicle with the hydraulic braking system and disc brake with the wheel has been investigated. The dynamic models of the disk brake assembly and the wheel have been constructed.
The automobile hydraulic braking system consisting of two contours is considered. . The mathematical model of the hydraulic braking system is presented, where the flow of liquid and the interaction of liquid with the rigid bodies are taken into account. The flow of fluid in a hydraulic system is described by a system of equations of a hyperbolic type, which is solved by a characteristics method. During the mathematical simulations and natural experimentations the following results were achieved. The systems of equations of dynamic models’ motions are solved by numerical methods. The dynamic characteristics of the braking system of the automobile are obtained. The results of extreme braking tests and calculations are presented.
Random Vibrations of Constructions and their Damping
Authors: Gužas Danielius , Čiučelis A.
Published: March 2009

In the article, the equation of the equivalent movement of the oscillator with viscous friction is provided. The statistical specifications and the spectral approach for the density of intensity of the established vibrations are provided. Non-stationary vibrations in the closed form are investigated. The statistical characteristic for intensity of vibrations is obtained.
The work presents a method of investigation of vibration processes of random mechanical vibrations in the equipment and apparatus. The vibratory system of a sufficiently small (as compared to vibrations of a long wave) size is described; the models with the limited number of degrees of freedom are applied. The statistical theory for discussing of vibrations at constructional damping is applied.
Semi-Active Suspension Laboratory System
Authors: Gorczyca P. , Kołek K. , Rosół R. , Turnau A.
Published: March 2009

The paper describes the semi-active suspension laboratory system (SAS), built to demonstrate and test a number of control algorithms. The heart of the system is the automotive engineering damper with the restoring force controlled by magnetic field. We use in our apparatus the Lord 1097 magnetorheological (MR) damper manufactured by the American company. MR devices benefit from the ability of MR fluids to rapidly change rheological properties upon exposure to a magnetic field. The main advantage of the SAS is its portability as a demonstrative experimental rig to test control damping algorithms. The damped less oscillations are compared to the On-off damped oscillations of the apparatus. The MR damper provides an effective solution to SAS control in a variety of applications.
System Analysis of Automatic Balancing (Self-Balancing) Machine Rotors with Liquid Working Bodies
Authors: Royzman Vilen , Bubulis Algimantas , Drach Ilona
Published: March 2009

This article deals with automatic balancing (self-equalizing) of rotors with vertical axis of rotation by means of liquid. There used to be a statement claiming that automatic balancing was possible only after first critical (above resonance) rotation zone of rotors. However in 1995 the phenomenon of automatic balancing with liquid in both below resonance zone of rotor rotation and in the resonance itself was registered using the method of high speed video shooting. The paper suggests theoretical explanation of the phenomenon stated by means of carried out experiments.
Selection of Coils Parameters in Magnetic Launchers
Authors: Gosiewski Zdzisław , Kondratiuk Mirosław
Published: March 2009

This paper describes the process of a coil launcher parameters selection. Objective function Θ was defined and crucial variables were sought. The electro-mechanical system consisting of a copper coil and a ferromagnetic core was designed. Displacement of the core was computed. The magnetic force and coil inductance were calculated in many core position in relation to solenoid. Simulations were done by means of Finite Elements Method (FEM). The model parameters were being changed and the best system geometry was sought. In order to achieve better legibility, the research results were shown in the graphs. Selection process turned out to be very complex. In order to determine the best device parameters, the currents thermal effects should be taken into consideration. As the final conclusion some constructional conceptions of the magnetic launcher were proposed. The research will be continued to improve the coil launcher optimization process. The aim of future investigations is to achieve greater magnetic force and lower inductance of the electro-mechanical system.
Use of Electromagnetic Impulse System for Transportation of Dry Materials and Solid Bodies
Authors: Mironov Victor , Viba Janis , Shtals Lauris
Published: March 2009

In first part of the report motion of magnetic powder materials in a vertical or inclined pipe are investigated. Mathematical models are analyzed, taking into account intensity of a pulse electromagnetic field, parameters of a powder and its interaction with the surface of the pipe and air. Experimental device, including control and measure system with the analysis of parameters by computer, is described. Second part of the report investigates a motion of non-magnetic materials. For this reason an additional magnetic container with open surface is used. After an impulse action the container stops before bound. Non-magnetic materials continue flying motion. In third part of the report the authors investigate motion excitation with impulse generator for plane vibrotransporters. It is shown that this excitation is very stable, because after impulse action the mechanical system continues vibration with a non-periodical motion and stops waiting for next impulse.
Vehicle Electro-Mechanical Brake System: A Mechatronic Application
Authors: Akkus Nihat , Yücel Fatih , Toptas Ersin
Published: March 2009

An electro-mechanic brake system, which has the potentiality to be used in future cars, has been studied and a prototype of the brake system has been produced. The electro-mechanic brake system has different working principles then hydraulic brake system. Hydraulic force or air pressure is used to obtain the braking force on the wheels in the hydraulic braking systems, whereas a solenoid valve push force is used to stop the car in electro-mechanic systems. A censor controlled the RPM of the wheel and the data was passed to a micro controller and micro controller produced PWM signals according to obtained signal. Thus, push force of the solenoid valve was controlled by micro controlled according to the braking ratio. If the wheel slows down the turning speed, then micro controller stops to sending PWM signals and solenoid is relaxed until wheels turns again. This cycle continues until the all wheels are stopped. A prototype of the system has been constructed and tested. The initial results indicated that the system can be potentially used in the automotives.
Research of Tribological Properties of Mineral Motor Oil with Cholesteryl Stearate Additive
Authors: Mokshin Vadim , Vekteris Vladas
Published: March 2009

Results of tribological research of mineral motor oil with and without twisted nematic liquid crystal additive (stearic acid cholesteryl ester) are presented in the article. Experimental research was performed by means of a “fixed segment – rotating roller” tribometer according to the central three-factor second-order rotatable factorial design. The following parameters were accepted as controllable factors: contact pressure (3.32–6.68 MPa), concentration of liquid crystal in lubricant (0.16–1.84 ) and the average height of surface roughness of contacting surfaces of roller and segment (2.5–37.5 μm). The friction coefficient and friction zone temperature were served as output parameters. Regression equations describing the friction process were obtained and tribological efficiency of liquid crystal additive was established.
Experimental and Analytical Investigations of the Dynamic Analysis of Adhesively Bonded Joints for Composite Structures
Authors: Ghoneam S.M. , Hamada A.A. , El-Elamy M.I.
Published: March 2009

Adhesively bonded joints are used extensively in various industries. Some imperfections like holes, thermal residual stresses occurring in the bolted, welded, riveted, and soldered joints don't take place in adhesively bonded joints. Hence, the main advantages of bonded joint are lightness, sealing, corrosion resistance, heat and sound isolation, damping, and quickly mounting facility which have been highly proved.
This paper introduces an attempt to study the dynamic analysis of adhesively bonded joint for composite structures to investigate mainly the influences of lamina code number, bonded adhesive line configuration and boundary condition on the dynamic behavior of the test specimens containing composite assembly. The numerical based on the use of finite element model (FEM) modified by introducing unified mechanical properties are represented and applied to compute efficiently the Eigen-nature for composite bonded structures.
The experimental tests are conducted to investigate such adhesive bonded joints using two different techniques. The first technique includes an ultrasonic technique in which the magnetostractive pulse echo delay-line for material characterization of composite material is used. The second technique is bassed on the use of the frequency response function method (FRF) applying the hammering method.
The comparison between the numerical and experimental results proves that the suggested finite element models of the composite structural beams with bonded joints provide an efficient by accurate tool for the dynamic analysis of adhesive bonded joints.
The damping capacity is inversely proportional to the stiffness of the bonded joint specimens. The type of the proportionality depends mainly on the bond line configuration type, lamina orientation, and boundary conditions. This in turn enables an accurate evaluation for selecting the proper characteristics of the specimens for controlling the present damping capacity and the proper resistance against deformation during the operating process.
The present study provides an efficient non-destructive technique for the prediction of dynamic properties for an adhesive bonded joint for the studied composite structure systems.
The coordination of the experimental and numerical techniques makes it possible to find an efficient tool for studying the dynamic performance of adhesively bonded joint for composite structures.
Radio Frequency Measurement and Control Network for a Cable Equipped with the Magnetorheological Damper
Authors: Rosół Maciej
Published: March 2009

The paper is devoted to an investigation of a Radio Frequency (RF) measuring-control system equipped with sensors and actuators distributed along the cable. Displacement, acceleration and strain sensors together with an actuator and PWM type control signals can be used. This system is configured to operate with the experimental setup specially developed to study MR damper performance for vibration suppression of cables. The RF measuring-control system structure, transmission protocol and radio disturbances problem are discussed. The experimental results for the cable laboratory system are presented.
Real Time Measuring of the Pressure Drops against Changing the Fluid Velocity on the Critical Points of the Fluid System
Authors: Gürbüz Riza
Published: March 2009

The purpose of this article is to measure fluid pressure drops against the changing velocity on the critical points of the fluid system by using mechatronics equipments and techniques. Critical points of the fluid system to be measured pressure drops are gate valve, globe valve, flow control valve, sudden enlargement, 45 or 90 junctions etc. Pressure drops occurs mentioned areas much more than other parts of fluid system. Pressure drop is directly concerning with flow rate of fluid. It was used venture-meter and orifice-plate to measure flow rate and fluid velocity in pipe. Pressure transmitters were used to measure pressure drops on the critical points of fluid system in according to changing flow rate of fluid. Pressure transmitters produce analog signals between 4-20 mA in according to changing pressure of fluid in pipe and analog input signals are interpreted through an A/D device, and is originate from pressure sensors. All the received data from pressure transmitters are transferred to computer via A/D cards. Received data from pressure transmitters is evaluated by using developed program to measure fluid friction losses with changing pressure differences and flow rate, velocity of fluid, Reynolds number, fluid type and some values can be seen on the screen of computer in real time.
Analysis of Time Response of Shape Memory Alloy Actuators Modular System
Authors: Mândru Dan , Lungu Ion , Noveanu Simona , Tătar Mihai Olimpiu
Published: March 2009

The first part of the paper treats the general problems concerning the shape memory alloy actuators and their operation principle. Then, our work referring to the developing a modular family of linear and rotational actuators, realized in many typo dimensions, in a compact design, with facile connection with the actuated mechanisms and supplying module is presented. The active elements of these actuators are shape memory alloy wires, ribbons and helical springs. The influence of the geometry of the active elements on the time response is studied. The most important solutions to reduce the resistive heating time of active elements and to improve the time response on cooling are identified.
Investigation of Influence of Rhenium Addition on W-Ni-Fe-Re Heavy Alloys Properties
Authors: Majewski Tomasz , Michałowski Jerzy , Piętaszewski Jan
Published: March 2009

The method of rhenium powder fabrication was presented in the paper. The powder was received by reduction of ammonium perrhenate. Rhenium was added to W+Ni+Fe powder mixture, then pressed (in the isostatic press), and next sintered in a vacuum furnace.
Sinters containing rhenium are more fine-grained as compared to WNiFe alloys. Their average grain diameters are 11,7 µm and 25,6 µm respectively. Sinters with addition of rhenium are charac-terized by higher hardness, higher tensile and yield stress but lower density and elongation as com-pared to classical heavy alloys.
Model Studies of Microstructure Changes in Sintering of Ceramics
Authors: Jonas Stanisława , Koleżyński Andrzej , Lis Jerzy , Stoch Pawel , Tkacz-Śmiech Katarzyna
Published: March 2009

In this article an experiment is described which is included into a course in materials science and allows for better understanding of a nature of sintering. It is a fusion of a computer simulation and a physical experiment – both performed in model systems. Part I of the experiment concerns microstructure of powders. Packing density and coordination numbers of the grains in the sintered powder are analysed with application of computer simulation. In part II of the exercise, the kinetics of the sintering of glass grains is measured via microstructure-evolution observations. The results may be used to discuss the mass transport mechanism.
Selection of PDM Information System
Authors: Maxa Jiří , Neděla Vilém
Published: March 2009

Technologies of the Electronics Product Definition - EPD, Product Data Management - PDM and Product Lifecycle Management - PLM represent modern trends in the field of Technical Production Planning and a new quality in this sector. Efficiency of utilization of these technologies for specific manufacturing companies depends materially on correct selection of the system and correct user adaptation of the purchased technologies. The main problem in CR is that the companies do not have adequate knowledge of the issue and therefore the conceptual system of selection does not exist here. And this is why the situation of selection is based as follows: The company addresses the supply house with unclear requirements, is unable to be adequately depth-oriented and selection of the system is in principle carried out by the addressed supply house which results in the danger that the company introduces an expensive system not quite conforming to its character. Instead of the awaited effect the total costs continue rising materially. The methodology of selection of the PDM system should be designed so that the whole process of selection is managed by the company itself and is modified precisely to its requirements. This is the very topic of this paper.