Single-Layer-Graphene and Electrochemical Exfoliated Graphene Oxide for HT-PEMFC
Authors: Holmes Stuart , Chen Jianuo , Perez-Page Maria , Guo Zunmin 
Published: July 2022

High-temperature proton exchange membrane fuel cell (HT-PEMFC) is promising with its low demand for hydrogen purity, simple water management, and high waste heat utilization [1][2]. Although polybenzimidazole (PBI), as a typical high-temperature fuel cell membrane, has been developed for a long period, it still has defects such as phosphoric acid leaching and insufficient mechanical properties under high acid doping level [3][4]. With its unique 2D hexagonal grid structure and its electron cloud arrangement, single-layer graphene (SLG) can block the passage of any atoms [5]. However, hydrogen protons can easily penetrate SLG through a unique intermediate state mechanism to make it have excellent proton conductivity [6]. SLG's high proton conductivity combined with its excellent mechanical properties and thermal conductivity make it an ideal material for blocking phosphoric acid leaching. The SLG prepared by the chemical vapor deposition (CVD) method was transferred to the surface of catalyst layer of electrodes by the wet chemical transfer method. Due to the rupture and incompleteness of the SLG during the transfer process, the coverage rate of the SLG on the electrode surface is about 55%. This incomplete coverage facilitates small quantities of phosphoric acid leaching from PBI membrane to electrodes, which increases the three-phase boundary area and improves the performance of the HT-PEMFC. After 70 hours of accelerated stress testing (AST), the peak power density of membrane-electrode-assembly (MEA) with SLG on both sides of the cathode and anode can reach 480 mW cm-2, while the peak power density of MEA based on pure PBI membrane is only 249 mW cm-2. The quantification of phosphoric acid in the electrode by Lab based X-ray micro-computed tomography and the Raman spectroscopic mapping of the MEA cross-section shows that SLG can mitigate the leaching of phosphoric acid in the PBI film and improve the durability of HT-PEMFC. Graphene oxide (GO) is a low-cost application of graphene. Its doping in the PBI membrane can also reduce the leaching of phosphoric acid through enhancing the interaction between phosphoric acid and the PBI membrane [7]. A reactor based on 3D printing was designed so that natural graphite flakes can be used for electrochemical exfoliation to achieve rapid, safe, environmentally friendly, and mass production of GO. The electrochemically exfoliated (E)GO is doped in the PBI membrane. The 0.5%, 1% and 2% EGO loadings in the PBI membrane increased the peak power density by 13.8%, 24.4% and 29.2%, respectively.

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