bluuebunny/crossref_metadata_2025 huggingface dataset:
n‐GaAs Band‐Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
Authors: Hilal Hikmat S. , Masoud Moayyad , Shakhshir Samar , Jisraw Najeh
Published: June 2007

Tetra(‐4‐pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII
and MnII
mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n
‐GaAs wafers. The n‐GaAs/polymer/MnP
system was annealed under nitrogen and used for photoelectrochemical study in water
system. The results indicated a positive shift in the value of the flat‐band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark‐current onset potential and the photo‐current open‐circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.
Synthesis of a Novel Low‐Component Programmable Sinusoidal Oscillator
Authors: Abuelma′atti Muhammad Taher , Al-Shahrani Sa′ad Muhammad
Published: June 2007

A novel circuit is presented for realizing a sinusoidal oscillator. The proposed circuit, developed through a true synthesis approach, uses one current‐feedback operational amplifier (CFOA), one operational transconductance amplifier (OTA), three grounded capacitors and one floating resistor. The proposed circuit enjoys several attractive features. Practical results, in excellent agreement with the presented theory, are included.
Diode Characteristics of a Metal‐Insulator‐Metal Structure
Authors: Gupta S. K. , Singal C. M. , Srivastava V. K.
Published: June 2007

The large intrinsic field that can exist inside a thin insulator film which is sandwiched between dissimilar electrodes, is utilized to make the MIM (Metal‐Insulator‐Metal) structure operate as a diode. Dielectric monomolecular films of barium stearate are sandwiched between an aluminium and a tin electrode. The maximum value of forward bias current is of the order of a few nanoamperes. It is suggested that the value of current may be increased by utilizing a suitably doped dielectric.
Electrolytic Oxidation of Semiconductor Surfaces
Authors: Hartnagel H. L.
Published: June 2007

Recently a greater understanding of the physics and chemistry of anodic oxide growth on III‐V compound semiconductors has become available. These details are reviewed and critically assessed. With the data avilable now new device applications can be considered.
Failure Mechanisms in Solid Electrolytic Capacitors
Authors: Brettle J. , Jackson N. F.
Published: June 2007

The failure mechanism of solid tantalum and aluminium capacitors have been investigated using a combination of electrical measurements and electron microscopy. The capacitor dielectric was examined before and after life testing and changes correlated with electrical measurements.

The basic mechanism of failure of solid tantalum capacitors is found to be field crystallisation of the essentially amorphous dielectric oxide. The growth of higher conductivity crystalline oxide during operation of the capacitors causes an increase in leakage current and may result in catastrophic failure. The effect of field crystallisation can be minimised by using high purity tantalum to reduce the number of crystallisation nucleation sites. Since crystalline growth is primarily dependant on applied voltage, high voltage capacitors are much more susceptible to failure than low voltage units.

There appears to be no long term failure mechanism in solid aluminium capacitors. However, a particular problem with these units is that they are difficult to make. This is because the anodic layer is chemically less stable in the case of aluminium than in the case of tantalum. The attack is initiated during the deposition of manganese oxide by pyrolysis from manganese nitrate solution and developed by the reform process. Solid aluminium capacitors often have a lower capacitance and higher initial leakage current than comparable solid tantalum units; however, the leakage current decreases on life tests and their reliability is high.
Resistivity Recovery of Thin Sputtered Aluminium Films
Authors: Tellier C. R. , Tosser A. J.
Published: June 2007

Aluminium films were r.f. sputtered onto vycor slides. Annealing induces a decrease of resistivity at temperatures between 300 K and 414 K. Isothermal resistance recovery occurs with a constant rate depending on the annealing temperature; the activation energy increases from 0.3 eV to 0.4 eV for increasing thickness. The resistivity recovery is attributed to a surface reordering phenomenon, which is in good agreement with the Mayadas–Shatzkes conduction occuring in these polycrystalline films, with a thickness independent mean grain diameter. Reflections on grain boundaries are independent of ageing, whereas the reflection coefficient on the upper surface is increased.
Photoluminescence of Anodic Oxide Films on Aluminium
Authors: Tajima Sakae , Baba Nobuyoshi , Shimizu Kenichi , Mizuki Issei
Published: June 2007

A wide variety of anodic oxide films were investigated from the photoluminescent point of view. It was found that the phenomenon of photoluminescence appears only on the films anodically formed in organic acids instead of inorganic acids. In particular, thick oxalic acid films formed in low electrolyte concentration, with high current densities on high purity aluminium, gave intense photoluminescence. The luminescent centres were presumed to be the carboxylate ions which had been incorporated in the films during anodisation.
Low Frequency Characteristics of TiO2(Rutile)–Glass Thick Films
Authors: Licznerski B. , Nitsch K. , Rzasa B.
Published: June 2007

An analysis is made of the low‐frequency characteristics of the permittivity ε′ and of tan δ of a thick‐film insulator
containing rutile grains bonded with an amorphous glass. The appearance of dielectric relaxation associated with a
maximum of tan δ, as well as characteristic Debye dispersions of the electric permittivity is observed. The relaxation
time does not depend on the rutile concentration in the dielectric. An equivalent circuit describing the behaviour of
a capacitor with such an insulator in the low frequency range is suggested. The experimental results are shown to be
consistent with an analysis based on the assumption that a titanium ion relaxation process occurs in the rutile grains. In
normal ambient conditions the influence of this kind of polarization disappears at frequencies higher than 102 Hz;
ε′ and tan δ then change insignificantly and the value of tan δ is conditioned by the hopping mechanism of conductivity in the glass and in rutile.
CALHYM: A Computer Program for the Automatic Layout of Large DigitalHybrid Microcircuits
Authors: Beke H. , Mazur S. , Govaerts R. , Sansen W. , Van Overstraeten R.
Published: June 2007

Using a library of available I.C. chips, and a network description of the circuit in terms of these chips, the program
CALHYM produces a 100% complete layout of a multilayer hybrid microcircuit in three steps: the partitioning of
the logic functions into library chips, the placement of the used chips on the substrate and the routing of the
interconnections.

CALHYM is written in Fortran IV and runs on a minicomputer with interactive graphic facilities.
Comparison of Arc Erosive and Laser Beam Trimming of Thin FilmResistors
Authors: Illyefalvi-Vitéz Zs.
Published: June 2007

The physical processes of arc erosive micromachining and the influence of trimming on the parameters of resistors
have been examined, and thin film resistors without trimming are compared with those trimmed by arc erosion and
laser beam machining.

In the paper a theoretical model for arc erosion of thin films is proposed. The optimal conditions of arc erosive
trimming are determined. The shape of the cuts are recorded and examined. The applicability of arc erosive
trimming with respect to stability is proved. A measuring method is introduced for resistors trimmed by arc erosion
using a direct current generator.
Optical Modulation Effects in Indium Oxide Films
Authors: Avaritsiotis J. , Howson R. P.
Published: June 2007

Tin doped indium oxide films produced by chemical vapour deposition and by d.c. sputtering have shown an optical
reflectance spectra which can be modulated in the region of the plasma edge in the near infra‐red by an electric field
applied to the surface through an electrolyte. The effect produced could be quantitatively predicted by a theory
developed for surfaces whose optical properties were controlled by their free carrier properties and for the sample
being in thin film form.

The plasma edge for films prepared by chemical vapour deposition on some occasions showed a modified plasma
edge effect which was attributed to surface plasmons allowed by roughness effects.
Factors Affecting Laser‐Trim Stability of Thick Film Resistors
Authors: Cote R. E. , Headley R. C. , Herman J. T. , Howe A.
Published: June 2007

Various factors affecting precision of trim and resistor stability are considered. The influence of machine operating
parameters (beam power, pulse frequency and trim speed) on resistor performance are examined and quantified
through statistically designed experiments for a Q‐switched YAG laser system. Laser kerf quality is examined by
scanning electron microscopy and related to kerf isolation resistance measurements. A relatively simple, production
oriented, quality control test is proposed for rapid determination of kerf electrical stability. In addition, the effect
of cut design and extent of trim on precision and stability are discussed.
Determination of Dielectric Constant of Stearic Acid Films Using Varying Gap Immersion Method
Authors: Agarwal V. K. , Ichijo B.
Published: June 2007

The dielectric constant data (at 3.5 MHz) on stearic acid thin films, obtained by using variable gap immersion
method, are presented. Many of the errors of the conventional universal bridge method are eliminated in the
method used here. It is also shown that the varying gap immersion method serves as an experimental tool for
simultaneous determination of film thickness with high degree of accuracy. The data on evaporated as well as
Langmuir films of stearic acid (≥1000 Å) are found to be consistent and in reasonable agreement.
New Approaches to the Direct Measurement of Capacitance
Authors: Raven M. S. , Raven D.
Published: June 2007

The limitations of conventional a.c. capacitance measuring techniques, for such measurements as MIS interface
capacitance and measurements of large value electrolytics, has lead to a demand for new methods of capacitance
measuring. This article reviews two new approaches which are presently being employed – the quadrature P.S.D.
technique and time encoded ballistic techniques.
Ageing Tests on Gold Layers and Bonded Contacts
Authors: Hieber H. , Betke F. , Pape K.
Published: June 2007

Studies have been made of the adhesion of gold thin films on NiCr and Mo layers deposited on ceramic substrates.
It is shown that the ageing behaviour and the related long‐term adhesion losses are complex processes and the
various contributing mechanisms are identified.
Grain Size Dependence of the Gauge Factor of Thin Metallic Films
Authors: Tellier C. R. , Tosser A. J.
Published: June 2007

The combined effects of grain boundary, external surface and background scattering (Mayadas and Shatzkes model)
are considered. Theoretical expressions of the transverse and longitudinal strain coefficient of resistance of monocrystalline
and polycrystalline films are calculated. These general formulae agree with those previously proposed for infinitely thick polycrystalline films.
A Hybrid Thin‐Film Logic Circuit Using Gallium Arsenide Field Effect Transistors
Authors: Startin R. A. , Cross A. C.
Published: June 2007

High speed systems demand faster logic than current silicon bipolar technology can offer. Hybrid or monolithic
circuits using gallium arsenide FETs provide an answer. The FETs require careful handling if electrical or mechanical
damage is to be avoided. The problems of bonding a large number of these devices to a thin‐film circuit to produce a
working hybrid logic element are discussed. Techniques for their solution are given with reference to a completed
experimental hybrid circuit.
The Development of the Capacitor Industry and its Position in World Markets
Authors: Driver Peter D.
Published: June 2007

This article sets out the existing position in world markets of the capacitor industry and discusses its development
both technically and commercially over the next few years. It examines the major component product groups
within the capacitor industry and indicates their relative importance in the total capacitor market and also their
individual development trends.

The external and internal pressures exerted on the capacitor industry are examined and their relative importance
in connection with the development of the industry are disclosed.
A Mass Production of Thick‐Film Car Voltage Regulators
Authors: Bianchi D. A. , Faravelli P. , Rodari G. S.
Published: June 2007

The technological solutions chosen for a car‐voltage regulator now in mass production (thick‐film hybrid with
standard encapsulated active devices) are discussed from the point of view of functional performance, producibility
and reliability.
A Screening Technique for Establishing the Stability of Metal Film Resistors
Authors: Goswami A. P. , Satyanarayana L. , Sivaji N. V. M.
Published: June 2007

A technique has been designed whereby stability data for metal film resistors may be predicted within 24 hours.
Regressional analysis and statistics are used in the technique.
Silicone Resin and Elastomer Protection of Hybrid Circuits
Authors: Trego Brian R.
Published: June 2007

Developments in encapsulants, in particular in relation to stress and humidity protection, are examined. Superior
protection can now be achieved with flexible room temperature curing silicone encapsulants.
State of the Art in Thin Film Transistor: A Review of the UsedInsulator–Semiconductor Combinations
Authors: van Calster André , de Vos Alexis
Published: June 2007

This paper deals with the technology of the thin film transistor (TFT). It deals with the different semiconductors
used successfully in a TFT, as well as the different gate insulators employed. A variety of structures have been
realized in the past. The most important difficulty with the use of these TFT structures consisted of low frequency
instabilities, caused by mobile ions in the insulator and slow states at the semiconductor‐insulator interface. Various
proposed solutions to these problems will be discussed.
A User Made Thick Film System
Authors: Honore M. , Govaearts R. , Hostens D. , Bouw B. , Matton B. , Jansoone V.
Published: June 2007

This paper describes the state of the art in the development of a polymer based printed circuit board (PCB)
compatible resistor ink system. The subject is treated from the standpoint of the manufacturer who, up to now,
supplied himself with PCB circuitry.
Effects of Refiring Processes on Electrical and StructuralProperties of Thick‐Film Resistors
Authors: Cattaneo A. , Prudenziati M.
Published: June 2007

in order to analyze the influence of the refiring processes in thick film resistors, electrical and structural properties
of resistors, refired up to ten times, through the original profile, were compared.

The apparent sheet resistivity and TCR were measured as a function of the number of the firing cycles, and these
electrical characteristics analyzed in connection with observations of structural and chemical modifications
evidenced through X‐ray diffraction, SEM inspection and microprobe analysis.

Marked effects were observed, such as segregation of the conductive grains in the resistor thickness, chemical
reactions of glass‐modifiers with glass, crystallization of new phases, together with substrate/thick‐film interactions.

It is found that in some cases (e.g. for DP 1400 resistor series) the phenomena induced by refiring are few and
simple enough for us to interprete the corresponding electrical modifications, while in other systems the presence of
many competitive chemicophysical effects inhibit their unambiguous correlation with the electrical properties of
these resistors.
1 GHz Low‐Noise Hybrid Preamplifier for Optical Detection
Authors: Monti O. , Scavennec A. , le Men P.
Published: June 2007

A 1 GHz low‐ noise preamplifier, especially designed for photodetection purposes is described. The amplifier noise
which sets a limit to the sensitivity of the photodiode‐preamplifier combination is minimized using a hybrid technology
which allows very low values of the parasitics. Results on a complete photodiode‐equalized preamplifier are
given.
Temperature Dependence of the Hall Coefficient of Thin Films
Authors: Tellier C. R. , Pichard C. , Tosser A. J.
Published: June 2007

A theoretical expression for the temperature coefficient βRH of the Hall coefficient RHF of metallic films is deduced
from the Fuchs–Sondheimer conduction model. The general expression takes into account the deviation introduced
by the geometrical limitation of the mean free path. This is negligible for relatively thick films (k ≥ 1 for p = 0) and
agrees with experiments previously reported by other authors.
Economics and the Market
Authors: Effenberger E.
Published: June 2007

The world market for Thick Film and Thin Film Circuits are considered and as a result an up dated version of the
figures presented at the First European Hybrid Conference for May 1977 are presented.
Thin Film Al‐Al2O3‐Al Capacitors With Dielectric Layer Formed at400℃
Authors: Osadnik S. J. , Berlicki T.
Published: June 2007

A comparative study is made of Al2O3 layers formed at 400℃ in molten
KNO3 and Al2O3 formed at room temperature in a common solution of ammonium pentaborate in ethylene glycol. At 400℃ and constant current
(0.5 mA/cm2 ) the linear anodization range is limited to 2.7 V by scintillation and local oxide breakdowns.
Nonporous 200 Å thick (0.4 μF/cm2) oxide layers were produced at 2.0 V (400℃) and 8 V (20℃). Electron
diffraction indicated a γ‐Al2O3 structure at an anodization temperature of 400℃ and amorphous structure at
room anodization temp. The initial values of tan δ were 100  ·  10−4  ±  40  ·  10−4 and 400  ·  10−4  ±  200  ·  10−4
respectively.

Capacitance and tan δ measurements during accelerated life test indicated that the films produced at 400℃ are
not superior to those formed at room temperature. In both cases a diffusion of metal at the metal‐oxide interface
seems to be the main ageing mechanism.

The internal electrical field measured by the C‐V method was unchanged in γ‐Al2O3 layers during the life test.
New Light‐Sensitive Positive‐Working Thick Resist Materials forVarious Electronic Applications
Authors: Ruckert H.
Published: June 2007

Two different systems of light‐sensitive resist materials precoated on carrier foils and their potential applications for
thickfilm‐technology and high quality printed circuits are described. In addition to 25 μm diazo screen printing film
already accepted in this field, new experimental films up to 70 μm thickness can be provided. They show excellent
shelf‐life and can be transferred to the screen and developed after exposure simply with water. The second system is
a 12 μm positive dry film resist based on the same chemistry as all positive liquid resists. After lamination to a
substrate it can be exposed directly on the resist. It gives better resolution than negative dry film resists and offers a
potential for multiple exposure. Thicker positive dry films are possible using a new positive system without diazo
compounds.
TiNx Thin‐Film Resistors for Hybrid Integrated Circuits
Authors: Kempisty Z. , Kròl-Stępniewska L. , Posadowski W.
Published: June 2007

TiNx thin‐films have been evaluated for use as thin‐film resistors. Thin‐films were obtained by reactive triode
sputtering of titanium in nitrogen atmosphere on crystallized glass substrates. In the resistive TiNx layers, the value
of x was 0.96.2 The value of the sheet resistance of the tested layers was 30 ohm/sq. Stability and TCR were
measured during accelerated ageing.
Model for Describing Emission Characteristics of Electron‐BeamEvaporation Sources
Authors: Szilágyi Miklós
Published: June 2007

The experimental data for the anistropic component of the angular distribution of electron‐beam evaporation sources
are usually described in terms of the cosnθ dependence. In this paper a simple model for calculating angular distributions
is presented. The generally used dependence appears as a particular case in the model.
Ultrasonic Ball/Wedge Bonding of Aluminium Wires
Authors: Dawes C. J. , Johnson K. I. , Scott M. H.
Published: June 2007

The process of ball/wedge bonding and its advantages are described. A capacitor discharge technique for the
formation of balls on 25 and 75 μm diameter aluminium wires is discussed. Ultrasonic welding trials were carried
out and the bonds subjected to pull tests with good results. Bonds of good strength were made between 25 μm diameter Al‐1% Si wire and Al thin films, Pd‐Au thick films and Au flashed Kovar.
Plasma Sprayed Resistors
Authors: Smith D. P. H. , Anderson J. C.
Published: June 2007

A range of films of mixed composition, prepared by arc plasma spraying, has been investigated. Both free powder
and powder in a plastic binder forming a rod have been used in the spray process. A variety of mixtures of
insulators, metals and semiconductors has been examined and it is shown that resistivity/temperature curves
for the specimens produced have in general two points of inflection, the temperatures of which vary with
composition. This allows prediction of a composition giving low T.C.R. at room temperatures for any given
metal/semiconductor combination. A qualitative theoretical model explaining this effect is presented. It has also
been demonstrated that a conductor/insulator combination need not necessarily exhibit a sharp transition.
This allows a broad range of resistance values to be obtained simply by varying composition.
Pulse Counting in Anodic Breakdown Measurements
Authors: Albella J. M. , Montero I. , Baonza J. , Martínez-Duart J. M.
Published: June 2007

An electronic method, based on the differentiation of the potential curve during anodization at a constant
current, is presented for evaluating the number of breakdown events in the scintillation of anodic oxides.
This simple method facilitates the study of the breakdown phenomenon in anodic oxides as a function of
the anodization current density, nature and resistivity of the electrolyte, etc. The results are briefly discussed
according to a proposed model of the scintillation mechanism.
Empirical Results Establishing the Thermal Independence of the Grain‐Boundary Reflection Coefficient
Authors: Pichard C. R. , Tosser A. J. , Tellier C. R.
Published: June 2007

Starting from the effective Fuchs–Sondheimer model of electronic conduction in thin polycrystalline films and
implementing the asymptotic expressions of conductivity it is shown that the hypothesis of temperature independence
of the grain boundary reflection coefficient agrees with previously published results.
Stencil Screens for Fine‐Line Printing
Authors: Stalnecker, Stewart G.
Published: June 2007

During the past decade, the thick film process has become a viable technology for the production of numerous
varieties of electronic circuits. Improvements in the quality of the substrates, the thick film inks, and the
manufacturing equipment have all been significant. In addition, the quality of the stencil screens has also been
improved to aid the process. New types of mesh material, improved emulsion systems and better control of the
screen parameters have all been realized. These refinements in the screen making materials and processes have all
contributed to the feasibility for printing complex resistor and conductor networks, hybrid circuits, multilayer
arrays, and sophisticated watch and display patterns.

This paper will present the critical parameters of the screen mesh materials and compare the characteristics of
the screen mesh materials and compare the characteristics of the nylon, polyester, stainless steel and metalized
polyester fabrics. A new fine‐wire 325 mesh stainless steel will be discussed and the significant impact on the
technology of fine‐line printing will be illustrated. In addition, recent developments in screen emulsions will be
offered and pictures of fine‐line patterns will be shown.
Current Noise of Resin Type and Cermet Type Thick Film Resistors
Authors: Fu Shen-Li , Shiramatsu Toyotaro , Wu Tien-Shou
Published: June 2007

The current noise indices (C.N.I.) depend linearly on the logarithmic values of sheet resistivity (log⁡ ρS), in both carbon black/resin and thallium oxide/glass resistors, and can be expressed as
C.N.I.  =  A  +  B log⁡ ρS. The geometrical dependency on C.N.I. in both types of resistor can be expressed as
C.N.I.  =  A′  −  B′ log⁡ (L,  W,  T), where A, B, A′ and B′ are constants.
The dependency of noise e.m.f. (νn) on the applied dc voltage (V), i.e., the values of α in , can be obtained from the slope of C.N.I. versus log⁡ (L) lines, associated with a model based on the noise generator approximation.
Application of Conductive Adhesives in Microcircuits for “Long‐Life” Equipment
Authors: Kooring C. W. L. , Riphagen D.
Published: June 2007

The results of a study of the application of conductive adhesives for attaching semiconductor chips to thin film Au
conductors is presented.

The study concentrates on measuring the stability of the electrical conductivity of adhesive bonds for
semiconductor chips.

Four types of conductive bonding agents and two types of semiconductor back metallization were tested at
raised temperatures for up to 10,000 hours.
Fabrication of Nonreciprocal Microwave Components Using Thick FilmFerrimagnetic Pastes
Authors: Maiti Chinmay. K. , Bhattacharyya D. , Chakrabarti N. B.
Published: June 2007

This paper reports results of investigations on edge guided mode circulators and junction circulators using thick film
ferrimagnetic pastes in the frequency range from 2 to 12 GHz. Performance of the circulators realized with the thick
film ferrimagnetic pastes will be compared with those made on YIG substrates in respect of insertion loss, isolation
and bandwidth. The study shows that while good isolation bandwidth is obtainable with edge guided mode circulators,
the insertion loss remains high.
Tape Automated Bonding for High Density Packaging
Authors: Kurzweil Karel
Published: June 2007

High density packaging of semiconductor devices is necessary for high performance in compact electronic systems.
But the assembly technology must also remain cost attractive.

Through the development efforts conducted during the past years in the world, the Tape Automated Bonding –
TAB – has become the assembly technology allowing a very high density packaging. In combination with substrate
technology it has grown into a complete, cost effective, micropackaging concept.

The paper describes the main technical characteristics of this packaging concept. Specific equipments for TAB
were designed and built by CII‐Honeywell Bull for installation in the factory. These equipments are not only those,
directly related to the TAB technology processing steps but include also other equipments like high precision thick
film printer.

The main features of the new micropackaging facility are also presented. Some examples of high density packages
built with tape automated bonding are described and some of the main quality and reliability aspects are discussed.
Possibilities for Air Fireable Base Metal Conductors
Authors: Stein S. J. , Huang C. , Cang L.
Published: June 2007

This paper discusses the status of thick conductive films formed by firing in air. The metals under study include nickel,
chromium, aluminum and copper. The properties of the films are presented for firing temperatures ranging from 580
to 850 degrees C. Compatibility with various dielectrics and glasses have been studied. Multilayer wiring seems
promising. Potential uses on porcelain enamelled steel, window glass and alumina substrates seem feasible.

Initial studies have been made of compatibility with thick film ruthenium‐based resistors. Some preliminary
information on termination resistance and other properties observed in such combinations is presented.

Possible applications in gas discharge displays for cathodes and conductor runs are discussed. Potential uses may
include economical ground planes, solar cell electrodes, varistor and thermistor terminations, and resistance
thermometers.
Reliability Evaluation of Thick Film Resistors Through Measurementof Third Harmonic Index
Authors: Kasukabe Susumu , Tanaka Minoru
Published: June 2007

The degradation mechanism of ruthenium‐based thick film resistors is investigated in accelerated tests under various
conditions of humidity, temperature and overload stress. This study shows that the variation of resistance is mainly
caused by hydration and dehydration in the conductive component RuO2 :  RuO2 + xH2O↔RuO2 • xH2O. In
addition to measuring resistance, the Third Harmonic Index (THI) is studied as the characteristic which may indicate
the degree of various defects in resistors. A strong correlation exists between “the initial THI” and “the variation
rate of resistance during an accelerated test”. A resistor which indicates a quite large initial THI shows remarkable
variation of resistance, and has scratches and/or foreign substances on the surface of the thick film resistor. As a
result, it becomes evident that the initial THI can be used to predict the stability of a resistor in a nondestructive test.
A Thick Film Hybrid IC Amplifier for Industrial Use
Authors: Tosaki Hiromi , Ikegami Akira , Okayama Tsutomu , Matsuoka Yoshitaka
Published: June 2007

Electronic circuits for industrial uses must satisfy the following requirements: low sensitivity to changes in the
surrounding temperature, high reliability, and small size. In the amplifier for a pressure transmitter described here, the
temperature dependences of its properties, Zero point and Span, are intensively influenced by TCRs of the resistors
used, and by a mismatching of the temperature dependences of the off‐set voltages between the two operational
amplifier IC chips. As forthe thick film resistors, it has been cleared that the DuPont 1700 series resistor pastes are
the most suitable:TCRs of less than +80 ppm/°C can be attained, and the change in resistance of the overglazed and
laser trimmed resistors is less than +0.1% after 5000 hours at 200°C. As for the operational amplifier IC chips, their
temperature dependences of the off‐set voltages are checked individually, utilizing a ceramic carrier containing an
operational amplifier IC chip. Then a pair of ceramic carriers, with a minimum mismatching of their temperature
dependences, is mounted on a thick film circuit substrate by a Pb/Sn solder reflowing. The various transistor chips are
divided into three functional blocks, and bonded into three ceramic carriers. Utilization of ceramic carriers in all active
devices employed results in sufficient standardization in the characterization of the semiconductor devices and in the
hybridizing process.

In the thick film hybrid IC amplifier for a pressure transmitter thus developed, the temperature dependences of
Zero point and Span are less than –0.5% FS/100°C, respectively. The drifts of Zero point and Span are less than
±0.1% FS in the period of 3000 hours of an operating test with DC 24 V loading at 100°C.
An Interactive Design System for Hybrid ICs
Authors: Shiraishi Hiroshi , Kawamura Kaoru , Hayashi Masaaki
Published: June 2007

In hybrid integrated circuit mask design, the design quality largely depends on the designer′s experience and
creativity. It is difficult to completely automate the design process as is done with LSIs or printed circuit boards. It is
important to incorporate flexibility into the system.

This paper describes an interactive design system for laying out hybrid ICs. The system is implemented on a large
host computer, and graphic display terminals are connected to it in a time sharing environment. The system provides
designers with many interactive facilities which are useful in designing hybrid ICs. In addition to highly interactive
dialogue, the system has capabilities such as dynamic checking of the designer′s operations against a set of design
rules, or automatic generation of standardized element patterns.

The system outputs mask information, design documents and so on which are used in the CAM of hybrid ICs. The
system is being used at Fujitsu and is contributing to high reliability of the design, and shortening the design period.
Functional Laser Trimming of Automotive Electronics
Authors: Mitobe Junji , Davison Chris
Published: June 2007

This paper discusses the use of laser trim systems for the trimming of automotive hybrids. Being high volume parts
these devices are best trimmed in two stages; first, a passive trim of the resistor substrate and secondly, a functional
trim. The requirements for such a functional trim are such as to demand a fully integrated system.
An Air Firing Base Metal Resistor and Conductor System for Low CostThick Film Circuit Manufacture
Authors: Browne E. K. , Walton B.
Published: June 2007

A series of air‐firing base metal resistor pastes which yield resistors with properties comparable to those of conventional
precious metal thick film resistors has been developed. The pastes can be post‐fired or co‐fired with air‐firing
nickel conductors in a very fast firing cycle thus providing a base metal combination which can be processed using
conventional furnaces. This is concluded to be a significant contribution to the manufacture of thick film circuits of low
cost especially in view of recent large increases in the prices of precious metals.
Application of Hybrid IC′s to the Automotive Electronics Market inEurope
Authors: von Roda Eckart
Published: June 2007

In the last few years hybrids have been increasingly used in automotive electronics in Europe. With examples from the
BOSCH and BLAUPUNKT production range their application in regulators, breakerless ignition modules,
electronically‐controlled fuel injection systems and car radios is illustrated. The elements and techniques used to
assemble the hybrids, and the advantages which can be gained are discussed.
Multi‐Layer 2 Mil Line Technology
Authors: Saito Tamio , Fukumoto Yoshikatsu
Published: June 2007

Multi‐layer 2 mil line technology has been increasingly required for VLSI and very high speed logic devices. This
technology makes it possible to shorten the length of interconnection lines between VLSI silicon chips. Thus the signal
propagation delay on the transmission lines can be minimized.

Multi‐layer 2 mil line technology research history, the new method and usages are discussed in this paper.
The Application of New Du Pont/USA/Copper Composition for Manufacturing of Thick‐Film Microwave Low Loss Resonators on L and X Band
Authors: Gondek Janusz J. , Wojcicki Marek A. , Koprowski Jan
Published: June 2007

The applicability of the various copper compositions to the production of thick‐film microwave devices has been examined. The results of this work are presented in this paper. The paper presents criteria and computer programs for thick‐film microwave integrated circuits. The investigations of asymmetrical striplines, stripline and circular resonators, microwave filters etc., have been used as a basis. The circuits were examined within the frequency band of 1–12 GHz. Based on the measurement results and the statistical analysis of the parameters of microwave integrated circuits, interesting conclusions concerned with the applications of thick‐film techniques to microwaves have been drawn. The results obtained have been compared with other work and new mathematical models have been prepared. Finally the future development of microwave integrated circuits has been commented on.
Defect Density and Electrical Properties of Vacuum Evaporated Copper Films From Annealing Studies of Electrical Resistance
Authors: Narayandas K. , Radhakrishnan M. , Balasubramanian C.
Published: June 2007

Copper films (210 – 1650 Å) were deposited onto glass microslides by vacuum evaporation. The films were subjected to heat treatment at a constant rate and the variation of electrical resistance with temperature was measured. The defect density and activation energy were calculated for different thicknesses from the knowledge of the change in electrical resistance with temperature and time. The defect density, F0 (E)max, varies from 17.2 to 6.05 μΩ•cm eV−1 in the thickness range 210 – 1650 Å whereas no appreciable variation in the activation energy is observed.

Thickness dependence of resistivity and temperature coefficient of resistivity (TCR) were studied in the above thickness range and the bulk resistivity and TCR were found to be 1.75 μΩ•cm and 5.5 × 10−3 K−1 respectively. Assuming the scattering coefficient to be zero, the mean free path of conduction electrons was estimated. From the knowledge of the bulk resistivity and mean free path, the Fermi surface area and the effective free electron density per atom were evaluated as 21.86 × 1016 cm−2 and 0.92 respectively.
Effect of Firing Temperature and Glass Content on the Electrical Properties of Thick Film Capacitors
Authors: Leppävuori S. , Uusimäki A.
Published: June 2007

A study was carried out to investigate the effects of the firing temperature of thick film capacitors on the capacitance density, loss factor and breakdown voltage. These effects were studied by varying the firing temperature and glass content of the dielectric paste and by using different types of electrode paste. The active part of the prepared paste was barium titanate and glass binder lead borosilicate glass.
Aging Degradation of Ni and NiCr‐Ni Thin Film Conductor Systems
Authors: Gorecka-Drzazga A. , Muszynska D.
Published: June 2007

In this paper an experimental procedure for the evaluation of the Ni and NiCr‐Ni new low cost conductor systems is described. The possibility of an application of these conductor systems as a contact material for thin film resistors has been examined. A special test pattern with intermittent pattern resistors and meander patterns of conductor and resistive material was applied. The quality of thin film resistor contacts is defined by the constancy of their electrical and physical properties during exploitation. Following the R.T. Galla distributed parameter analysis model the calculation of the aging degradation of the Ni and NiCr‐Ni conductor systems has been carried out.

Considering the degradation values it seems that the Ni one‐component conductor system is superior to the NiCr‐Ni two‐component system. From this investigation we can conclude that the quality of studied conductor systems is satisfactory in applications where corrosion resistance is not critical.
Allowable Power in NiCr Film Resistors
Authors: Berlicki T. , Prociów E.
Published: June 2007

This paper reports the dependence between the power required to cause destruction and the dimensions of resistive films, i.e. the width and thickness. The dependence has been analysed using destruction phenomenon models which consider the increase of temperature of the resistive films and the films defects. Results show that the power value required to cause destruction rises linearly with the width of the resistor films and is exponentially proportional to the sheet resistance.
The Effect of Sequential Heat Treatment on Resistance and Temperature Coefficient of Resistance (TCR) of NiCr Thin Films
Authors: Stepien B. , Wojtczak K.
Published: June 2007

Measurements have been made of resistivity as a function of temperature in the range 290 to 600°K for vacuum deposited NiCr thin films subjected to different heat treatments in air.

While the films prior to heat treatment exhibit a negative TCR in the range 290 to 390°K, after heat treatment the TCR becomes positive and almost constant, in the temperature range 290 to 600°K. The TCR increases when further sequential cycles of heat treatment are applied.
An Inexpensive Diffusion Furnace
Authors: Haskard M. R. , Bannigan J.
Published: June 2007

The paper describes the design of a low cost diffusion furnace suitable for monolythic circuit manufacture in
educational and other establishments, where throughput is small. Features include maximum temperature of
1300℃, direct reading set temperature dial, flat zone 55 mm and an idle temperature of 420℃ when the
furnace is not in use.

Four such furnaces have been in operation at the School of Electronic Engineering, South Australian
Institute of Technology, each for a twelve month period and have given trouble free operation.
Advances in Low Cost Silver‐Containing Thick Film Conductors
Authors: Taylor Barry E. , Felten John J. , Horowitz Samuel J. , Larry John R. , Rosenberg Richard M.
Published: June 2007

Extensive use of thick film materials to manufacture resistor networks and hybrid integrated circuits has come about because of economic, processing and functional advantages over other technologies in the high volume production of miniaturized circuits. Inherent in the adoption of thick film technology for increasingly diverse applications has been the ability of thick film material suppliers to provide progressive performance improvements at lower cost concurrent with circuit manufacturer′s needs. Since the first major commercial thick film adoption in the early sixties, when IBM adopted platinum gold conductors and palladium silver resistors in their 360 computers, rapid technological advances over the last decade have produced an increasing variety of hybrid circuits and networks. The wide adoption of thick film technology in all segments of the electronic industry has placed increasing demands on performance and processing latitude. This paper outlines the development of low cost silver‐bearing conductors and describes the evolution of technology improvements to present day systems. The initial segment reviews the deficiencies of early Pd/Ag conductors, particularly solder leach resistance and degradation of soldered adhesion following high temperature storage, and focuses on the first Pd/Ag system which overcame these problems. Extension of this technology and subsequent improvements in both binders and vehicles to fulfill adhesion requirements to Al2O3 substrates of varying chemistries and to meet demands for high speed printing are also described. The second segment gives an overview of the present understanding of thick film conductor composites from a mechanistic point of view. The various types of binder systems commonly employed in conductors are discussed in terms of how they effect a bond between the sintered metal and the substrate, and the advantages and disadvantages of each type. Metallurgical aspects of conductor/solder connections are considered and their effects on bond reliability following exposure to high temperature discussed. Rheological considerations of paste design are presented and related to printing performance. The final segment focuses on newer low cost, high performance material systems that have evolved over the past two years. The technologies of each system are reviewed in terms of metallurgy, binder and vehicle. Important functional properties are presented to illustrate cost/performance tradeoffs. Special emphasis is given to recently developed high Ag containing conductors which have outstanding soldered adhesion even after 1000 hours of storage at 150℃.
New Du Pont Composition Applied in Thick‐Film Temperature and Humidity Sensors
Authors: Gondek Janusz J. , Wójcicki Marek A.
Published: June 2007

This paper presents results of the investigations concerning thick‐film sensors of temperature and humidity. Main criteria have been discussed and design programs computed by the ODRA computer in the Fortran language. The production techniques of the sensor have been described. Based on the results of the measurements and on the statistical analysis of the sensor parameters the authors have given characteristics of these sensors. They have given examples of their applicability and production perspectives. Sensors produced in Poland have been compared with similar devices made abroad. The authors have applied compositions prepared by Du Pont. This has been possible owing to the assistance of this well known American firm.
PFA-100 closure times in preoperative screening in 500 pediatric patients
Authors: Roschitz Birgit , Thaller Sigrid , Koestenberger Martin , Wirnsberger Andrea , Leschnik Bettina , Fritsch Peter , Muntean Wolfgang
Published: June 2007

Three to five percent of patients undergoing surgery have either an acquired or congenital platelet defect or von Willebrand disease (vWD). The predictive value of preoperative coagulation screening is questionable. PFA-100 is now routinely used in preoperative screening in our pediatric outpatient service. We wanted to assess whether the PFA-100 would help to identify patients with primary haemostatic defects or if the additional use of PFA-100 would add to the problem of unnecessary pathologic preoperative laboratory values resulting in delay of surgical procedure. We investigated 500 children consecutively seen in our outpatient service before surgery. Blood cell count, aPTT, PFA-100 closure times (CT) were done in all patients. If abnormalities were found, the patient was presented to a haemostatic expert. vWF:AG, R:Cof and factorVIII were analysed in all patients with prolonged closure times and APTT values. One hundred twenty-six patients (25.2%) showed abnormalities in APTT and/or PFA-100. Further investigations in 89 of these 126 patients did not yield a specific diagnosis; neither diagnostic criteria for impaired haemostasis were found by questionnaire. None of these 89 patients had a bleeding complication during surgery. Forty-eight patients showed prolonged CTs. Twelve patients with low vWF:AG were detected, 10 of these patients were found by PFA-100. Four of these patients did present with normal APTT values. Our study shows that similar to the APTT the PFA-100 is probably only a good screening method when a haemostatic defect in a patient is clinically likely, especially to screen forVWD, and the test should not be used in general unselective screening.
Lack of urokinase plasminogen activator promotes progression and instability of atherosclerotic lesions in apolipoprotein E-knockout mice
Authors: Dellas Claudia , Schremmer Carmen , Hasenfuss Gerd , Konstantinides Stavros , Schäfer Katrin
Published: June 2007

Urokinase plasminogen activator (uPA) is strongly expressed in atherosclerotic lesions, but the overall effect of the protease on plaque composition and growth remains controversial. In the present study, apolipoprotein E-deficient (apoE-/-) mice were intercrossed with mice which were lacking the uPA gene (doubleknockout; DKO). In ferric chloride-induced carotid artery lesions in chow-fed mice, uPA deficiency increased neointimal size (P=0.015) and luminal stenosis (P=0.014), while reducing media thickness (P=0.002). A lack of uPA also increased the size of and the luminal obstruction from atherosclerotic plaques at the coronary and brachiocephalic arteries of apoE-/- mice. Plaques were characterised by a higher fibrinogen/fibrin content and a decrease in cellularity and collagen content. When apoE-/- and DKO mice were analysed as a single group, a significant correlation was found between the α-actin (smooth muscle cell) and collagen content of atherosclerotic lesions (r = 0.554; P<0.05), and a negative correlation existed between the α-actin and fibrin/fibrinogen immunopositive area (r = –0.791; P<0.001). Further analysis of brachiocephalic atherosclerosis, a predilection site for plaque rupture in the apoE-/- mouse, revealed signs of plaque vulnerability, including a reduced cap-to-intima ratio (0.21 ± 0.04 vs. 0.37 ± 0.05; P=0.03) and more frequent detection of intraplaque haemorrhage (56% vs. 13%; P<0.01) and buried fibrous caps (1.8 ± 0.5 vs. 0.5 ± 0.2; P=0.02) in DKO compared to apoE-/- mice. These results indicate that, at least at (patho)physiologic concentrations, uPA is essential for maintaining the cellularity and collagen content and, possibly, the stability of lesions, both by preventing excessive intramural fibrin accumulation and by facilitating cell migration and invasion.