(Invited) High-Sn Concentration MOCVD-Grown Strained GeSn Thin Films Evaluated Using HAXPES and XRD Base on Synchrotron Technique
Authors: Usuda Koji , Yoshiki Masahiko , Suda Kohei , Ogura Atsushi , Tomita Mitsuhiro 
Published: February 2020

1. Introduction

GeSn alloy is an attractive material as a high hole mobility channel substituting Si and as a stressor for strained channels. Furthermore, modulation of band structure from indirect to direct gap by the increasing Sn composition up to 6-10 % is expected to improve the performance of optical devices [1, 2]. Then, a high-quality GeSn thin film with higher Sn concentration is a promising for higher performance and integrated devices on the Si platform. However, it has been difficult to increase Sn concentration, because the solubility limit of Sn within a GeSn film is considered to be approximately 1 atomic % [3]. Hence, a growth technique which enables the suppression of Sn segregation during GeSn growth and a characterization to analyze the surface segregation occurred with a thickness of several nm, are essential. For these purpose, we have developed a metal-organic chemical-vapor-deposition (MOCVD) method with new source gases that is safe, uniform, and industrially applicable [4]. In addition, we also investigated a hard X-ray photoelectron spectroscopy (HAXPES) and X-ray diffraction (XRD) on synchrotron technique to analyze thin GeSn films.

In this presentation, we introduce high Sn concentration GeSn thin film exceeding 6% prepared by combining the new MOCVD growth and synchrotron analysis methods.

2. Experimental

Thin GeSn films with the thickness of typically 30-100 nm were grown on (001) Ge substrates at low temperature (320-360 degrees) by the MOCVD method using Ge (t-C4H9GeH3) and specially prepared Sn ((C2H5)4Sn) source gases. The Sb was doped from the atmosphere with residual triisopropyl-antimony [(i-C3H7)3Sb]. The target compositions of Sn were 2%, 3%, 6%, respectively. To clarify the crystallinity of GeSn films, HAXPES and XRD were carried out at SPring-8. Since the inelastic mean free path (IMFP) is several times deeper than that for conventional X-ray photoelectron spectroscopy (XPS), HAXPES is expected to be useful to identify simultaneously the variation of chemical state at a surface part and the underlying bulk part of a GeSn film [5]. The Sn and Sb concentrations were calculated by the combination of Rutherford back-scattering spectroscopy (RBS) and secondary ion mass spectrometry (SIMS) measurements. Cross-sectional TEM was also carried out for the evaluation of the crystal quality.

3. Results and discussion

Initially, we observed the splitting of the Sn3d5/2 spectrum into two peaks for 3% Sn composition GeSn film by the HAXPES measurement, whereas the spectrum of a low Sn composition (2%) GeSn film remained single (Fig.1). The binding energy of the newly split peak (M2) was lower than that of the Sn3d5/2 peak (M1) and the peak position of M1 approximately coincided with that of the 2% GeSn film. To clarify the newly split Sn3d5/2 peak (M2), total reflection mode HAXPES (TR-HAXPES) measurement was also carried out for the 3% GeSn film. As a result, only a single Sn3d5/2 spectrum was observed by the measurement. Since the position of the observed peak by the TR-HAXPES, closely coincided with the split peak (M2), the M2 was identified as a peak derived from the Sn segregation formed at the film surface. Hence, it is concluded that depth profile characterization of the Sn chemical state within a GeSn film possible by combining the HAXPES and TR-HAXPES measurements.

In order to further increase the Sn concentration, we employed Sb as a surfactant [6]. As a result, neither extreme change of XRD spectrum due to strain relaxation or asymmetric structure of HAXPES by the Sn segregation was observed for the newly grown GeSn film of 6% Sn. A decrease in the broad peak intensity on the high binding energy side due to surface oxidation was also confirmed. Since the surface is more stabilized by Sb with lower interfacial free energy, it is expected that suppression of Sn segregation and uniform Sn concentration in depth direction are simultaneously achieved. The concentration distribution of Ge and Sb were confirmed by the RBS and SIMS, and it was revealed that the Sn concentration was uniform in the depth direction, and the composition of Sn and Sb was 6.6 at.% and 0.5 at.%, respectively. Hence, by combining newly developed MOCVD technique and synchrotron technique, it was confirmed that uniform GeSn thin layer with higher Sn composition was realized.

Reference

[1] S.Zaima, JJAP 52 (2013) 030001, [2] R.Cjhen et al., APL 99, (2011) 181125, [3] C. Thurmond et al., J.Chem.Phys. 25,(1956)799, [4] K.Suda et al., ECS J.SSST, 4 (2015) 152. [5] K.Usuda et al., MRS spring meeting, (2016), EP11.6.10. [6] X. Yang et al., IEEE Photon.Tech.Lett.12,(2000) 128.

Figure 1