bluuebunny/crossref_metadata_2025 huggingface dataset:
Cu2ZnSnS4 thin film solar cells by fast coevaporation
Authors: Schubert Björn‐Arvid , Marsen Björn , Cinque Sonja , Unold Thomas , Klenk Reiner , Schorr Susan , Schock Hans‐Werner
Published: May 2010

Solar cells based on kesterite‐type Cu2ZnSnS4 (CZTS) were fabricated on molybdenum coated soda lime glass by evaporation using ZnS, Sn, Cu, and S sources. The coevaporation process was performed at a nominal substrate temperature of 550°C and at a sulfur partial pressure of 2–3 × 10−3 Pa leading to polycrystalline CZTS thin films with promising electronic properties. The CZTS absorber layers were grown copper‐rich, requiring a KCN etch step to remove excess copper sulfide. The compositional ratios as determined by energy‐dispersive X‐ray spectroscopy (EDX) after the KCN etch are Cu/(Zn + Sn): 1.0 and Zn/Sn: 1.0. A solar cell with an efficiency of 4.1% and an open‐circuit voltage of 541 mV was obtained. Copyright © 2010 John Wiley & Sons, Ltd.
The 4th Human Kidney and Urine Proteome Project (HKUPP) Workshop 26 September 2009, Toronto, Canada
Authors: Yamamoto Tadashi
Published: May 2010

The Human Kidney and Urine Proteome Project (HKUPP) was initiated to promote proteomics research in the nephrology field, to better understand kidney functions as well as pathogenic mechanisms of kidney diseases, and to define novel biomarkers and therapeutic targets. The 4th workshop held in September 2009 discussed problems of proteomics analysis for kidney tissues and urine samples and a standard protocol for collection, storage and protein concentration of urine samples was decided upon.
Human Brain Proteome Project – 12th HUPO BPP Workshop 26 September 2009, Toronto, Canada
Authors: Gröttrup Bernd , Eisenacher Martin , Stephan Christian , Marcus Katrin , Lee Bonghee , Meyer Helmut E. , Mok Park Young
Published: May 2010

The HUPO Brain Proteome Project (HUPO BPP) held its 12th workshop in Toronto on 26 September 2009 prior to the HUPO VIII World Congress. The principal aim of this project is to obtain a better understanding of neurodiseases and ageing, with the ultimate objective of discovering prognostic and diagnostic biomarkers, in addition to the development of novel diagnostic techniques and new medications. The attendees came together to discuss progress in the human clinical neuroproteomics and to define the needs and guidelines required for more advanced proteomic approaches.
AlN synthesis on AlN/SiC template using Li–Al–N solvent
Authors: Kangawa Yoshihiro , Kakimoto Koichi
Published: May 2010

We investigated the possibility of AlN synthesis using Li‐Al‐N solvent. In this work, Li‐Al‐N solvent was obtained by heating a mixture composed of Al and Li3N. First, we studied the relationship between Al/Li3N composition of the initial mixture and shape of obtained crystal. The results showed that polyhedral crystals instead of needle‐like crystals were obtained under an Al‐rich condition, i.e., 4/3 < Al/Li3N < 4/1. Next, we performed AlN synthesis on an AlN/SiC template under an Al‐rich condition. The results suggested that a large AlN single‐phase region was formed by using the template. The possibility of growth of bulk AlN using Li‐Al‐N solvent was shown by the present investigations.
Fabrication of transparent nanocrystalline InGaO3(ZnO)2 thin films using a solution process
Authors: Kim Kyung Ho , Kim Gun Hee , Kim Hyun Jae
Published: May 2010

We used a solution process to fabricate transparent nanocrystalline (nc) InGaO3(ZnO)2 thin films on a glass substrate. The formation of the nanocrystals resulted from a self‐solid phase reaction (S‐SPR). The nanocrystals began to form at a temperature of ∼300 °C, and grew gradually with increasing postannealing temperatures. The optical transmittance of the nc‐InGaO3(ZnO)2 thin film was ∼92% in the visible range. Fewer oxygen deficiencies occurred in the InGaO3(ZnO)2 thin film that was transited from the amorphous (a) to the nc phase. The ratio of oxygen to indium, gallium, and zinc was 1.16, which is close to the stoichiometric value for the nc‐InGaO3(ZnO)2 thin film.
Ultraviolet photoconductive sensor based on single ZnO nanowire
Authors: Lupan O. , Chai G. , Chow L. , Emelchenko G. A. , Heinrich H. , Ursaki V. V. , Gruzintsev A. N. , Tiginyanu I. M. , Redkin A. N.
Published: May 2010

ZnO nanowires were synthesized by the CVD procedure and have been investigated by SEM, TEM, SAED, Raman, and cw PL spectroscopy. The fabrication of an ultraviolet (UV) photoconductive detector based on single ZnO nanowire (100 nm in diameter) is presented. This nanostructure detector is prepared in an Focused Ion Beam (FIB) set‐up by using nanodeposition for metal electrodes. The photoresponse of the UV sensor are studied using a UV source with an incident peak wavelength of 365 nm. It was demonstrated that the output signal of the sensors is reproducible under UV irradiation. The photoresponse and characteristics of the ZnO nanowire‐device demonstrates that focused ion beam process offers a way to fabricate novel nanodevices on a single ZnO nanowire with diameters as small as 100 nm. The presented single ZnO nanowire sensor proves to be promising for application in various processes.
Transparent electrodes based on metal and metal oxide stacked layers grown at room temperature on polymer substrate
Authors: Guillén C. , Herrero J.
Published: May 2010

Transparent electrodes based on very thin stacked layers of Al‐doped zinc oxide (AZO) and Ag have been prepared on conventional soda lime glass and flexible polyethylene terephthalate substrates by sputtering at room temperature. The optical, electrical and structural characteristics of AZO/Ag/AZO multilayer electrodes have been analysed at different preparation stages and compared onto glass and polymer substrates. Such structures have shown sheet resistance below 6 Ω sq−1 and maximum transmittance around 85% near 600 nm by discounting the corresponding substrate, with a low material consumption owing to the whole electrode thickness is below 100 nm. The band gap energy has been found dependent on the structural distortion of the as‐grown polycrystalline AZO films, being both parameters higher on the polymer than on the glass substrates.
Dielectric modeling of transmittance and ellipsometric spectra of thin In2O3:Sn films
Authors: Qiao Zhaohui , Mergel Dieter
Published: May 2010

Thin ITO films with thickness between 0.05 and 0.4 µm were deposited on quartz substrates by direct‐current magnetron‐sputtering. The films' ellipsometric and transmittance spectra between 280 and 2500 nm were simulated simultaneously with a computer program based on dielectric modeling. The dielectric function used is the sum of three types of electronic excitations: intraband transitions of free electrons (extended Drude model), band gap transitions, and interband transitions into the upper half of the conduction band. A successful fit of the simulated to the experimental curves was obtained with a two‐layer model (bulk and surface layers) and applying the Bruggeman effective‐medium approach. From the simulation, film thickness, refractive index, band gap, and free carrier density can be obtained. The thickness of the surface layer is comparable with the surface roughness determined by AFM measurements.
On the mechanism of conductivity enhancement and work function control in PEDOT:PSS film through UV‐light treatment
Authors: Moujoud Abderrafia , Oh Sang Hoon , Shin Hyun Soo , Kim Hyun Jae
Published: May 2010

In this work, we study the effect of UV light on the work function of PEDOT:PSS films. The authors found that UV irradiation lead to an increase in the work function. Several devices with UV exposed and unexposed PEDOT:PSS were fabricated and measured. The current–voltage characteristics have been obtained for ITO/PEDOT:PSS/InZnO samples. We found that UV irradiated devices show better electrical characteristics and lead to Ohmic contact. The trend in device performance was explained by the observed changes in the work function of the PEDOT:PSS layer. The change in the work function was measured by ultraviolet photoelectron spectroscopy. The structural and morphological properties of PEDOT:PSS films with and without UV treatment were investigated by X‐ray photoelectron spectroscopy and atomic force microscopy techniques. The change in the work function of PEDOT:PSS is mainly due to the surface conformational change. The stability of devices with and without UV treatment has been investigated under normal environmental conditions. Electrical properties of the devices have been studied over a period of 30 and 60 days. The stability tests show that devices with UV treatment are more stable that those without UV treatment.
Sol–gel prepared (Ga1−xInx)2O3 thin films for solar‐blind ultraviolet photodetectors
Authors: Kokubun Yoshihiro , Abe Torataro , Nakagomi Shinji
Published: May 2010

We prepared (Ga1−xInx)2O3 thin films at 900 °C using a sol–gel method, from a 2‐methoxyethanol solution of gallium isopropoxide and indium isopropoxide stabilized by monoethanolamine on (0001) sapphire substrates. X‐ray diffraction showed that films prepared from solutions with an indium content below 0.4 are single phase with the same monoclinic structure as β‐Ga2O3 and that increasing the indium content increases the lattice constants. Optical absorption showed that the band gap decreased linearly to 4.2 eV as indium content increased to 0.3. Planar geometry photoconductive detectors have been fabricated on the (Ga1−xInx)2O3 thin films prepared from the solution with an indium content below 0.2. They showed photosensitivity in the solar‐blind region, and the long wavelength threshold of spectral response shifted toward longer wavelengths with an increasing indium content. Furthermore, heterojunction structures composed of Ga2O3 and (Ga1−xInx)2O3 were also fabricated and characterized by transmission electron microscopy and optical absorption.
Applications of ZnO:Al deposited by RF sputtering to InN low‐cost technology
Authors: Fernández S. , Naranjo F. B. , Valdueza‐Felip S. , de Abril O.
Published: May 2010

InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio‐frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as‐deposited layer on InN was achieved. A specific contact resistance of 2 Ω cm2 was measured without any post‐deposition treatment. These properties could result very promising for optoelectronic device applications.
Origin of high‐density hole doping and anisotropic hole transport in a wide gap layered semiconductor LaCuOSe studied by first‐principles calculations
Authors: Hiramatsu Hidenori , Kamiya Toshio , Ueda Kazushige , Hirano Masahiro , Hosono Hideo
Published: May 2010

LaCuOSe is a wide gap (Eg = 2.8 eV) p‐type semiconductor. Epitaxial films may be converted to a degenerate semiconductor with hole concentrations (nh) > 1 × 1021 cm−3 by doping Mg ions to the La sites. We, however, found that the Mg concentration in the highest nh film was too low (<1%) to explain the high nh. Further, we observed large subgap absorption and no Burstein–Moss (BM) shift in the doped LaCuOSe, which contradict with a rigid‐band scheme. The doping stability was examined by density functional theory (DFT) calculations. The results showed that the substitution of the La site with an Mg ion needs a large extra energy and is not stable. Alternatively, copper vacancies are easily formed and work as shallow acceptors. On the other hand, it is also revealed that the calculation results are unable to explain the subgap absorption and the absence of a BM shift. Carrier transport calculations based on DFT and the Boltzmann transport theory were also performed, which provided information about anisotropic carrier transport in the layered crystal structure.
Optoelectronic properties of transparent p‐type semiconductor CuxS thin films
Authors: Parreira P. , Lavareda G. , Valente J. , Nunes F.T. , Amaral A. , de Carvalho C. Nunes
Published: May 2010

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n‐type conductivity. The fabrication of a transparent p‐type semiconductor with good optoelectronic properties (comparable to those of n‐type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p‐type narrow‐band‐gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu2S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p‐type semiconductors. In this work CuxS thin films were deposited on alkali‐free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p‐type thin film transistor. In our CuxS thin films, p‐type high conductivity with a total visible transmittance of about 50% have been achieved.
Influence of post‐deposition annealing of PVP/pentacene films on characteristics of organic thin film transistors
Authors: Kim K.‐J. , Yoo H. , Jeong S.‐W. , Roh Y.
Published: May 2010

We report the roles of post‐deposition annealing of PVP/pentacene double‐layered films on the electrical properties of organic thin film transistors (OTFTs). Data obtained by atomic force microscopy (AFM) and X‐ray diffraction (XRD) techniques demonstrate that both the grain size and the (001) peak intensity of pentacene films increase as the annealing temperature increases, resulting in clear dendrite structure after annealing at 100 °C in N2 ambient. These physical properties were also confirmed by electrical conductivity (EC) of pentacene films. The electrical properties of OTFTs were improved with increasing the annealing temperature in general: Especially, mobility and on/off ratio of the OTFTs subjected to the 100 °C annealing process were 0.32 cm2/Vs and 106, respectively, which were both improved at least one order of magnitude as compared to those measured from the samples without annealing.
Influence of RF power on the properties of sputtered ZnO:Al thin films
Authors: Antony Aldrin , Carreras Paz , Keitzl Thomas , Roldán Rubén , Nos Oriol , Frigeri Paolo , Miguel Asensi José , Bertomeu Joan
Published: May 2010

Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as‐deposited films were found to be influenced by the deposition power. The X‐ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44–3.58 eV. The lowest resistivity of 1.2 × 10−3 Ω cm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power.
Growth mechanisms and thickness effect on the properties of Al‐doped ZnO thin films grown on polymeric substrates
Authors: Koidis Christos , Logothetidis Stergios , Kassavetis Spiridon , Laskarakis Argiris , Hastas Nikolaos A. , Valassiades Odisseas
Published: May 2010

The properties of Al‐doped ZnO (AZO) thin films deposited by pulsed DC magnetron sputtering under various target power on polyethylene terephthalate (PET) substrates have been investigated. In situ and real‐time spectroscopic ellipsometry (1.5–6.5 eV) has been employed to study the optical properties of the AZO films as well as the growth mechanisms taking place. With X‐ray diffraction technique under grazing‐incidence geometry, the structural characteristics profiles of the AZO films have been depicted. Nanoindentation measurements revealed information about the mechanical properties of the films and have been correlated to the conductivity measurements towards growth insights understanding. As results have shown, the increase of target power led to the increase of the carrier density as well as the hardness of the AZO films possibly both ascribed to dislocations induced. The stress during the deposition of AZO film under high target power favoured the island growth which is possibly both connected to the formation of defects as electron traps and dislocations as electron sources. Finally, the increase of AZO film thickness led to the increase of the resistivity possibly due to the enrichment of grain boundaries with defects as electron traps.
Effect of deposition temperature on the physical properties of RF magnetron sputtered Ag–Cu–O films with various Cu to Ag ratios
Authors: Uthanna S. , Reddy M. Hari Prasad , Boulet P. , Petitjean C. , Pierson J. F.
Published: May 2010

Thin films of Ag–Cu–O were deposited on glass substrates held at various temperatures in the 303–523 K range by RF magnetron sputtering of Ag90Cu10, Ag80Cu20 and Ag70Cu30, and elemental copper and silver targets in an oxygen partial pressure of 2 × 10−2 Pa and sputtering pressure of 4 Pa. The deposited films were characterised by energy dispersive X‐ray analysis, X‐ray diffraction (XRD), atomic force microscopy, UV–Vis–NIR spectroscopy and employing four‐point probe method. The atomic ratio of Cu/Ag in the films formed at 303 K was in correlation with the composition of the starting sputter targets. The increase in substrate temperature induced the decomposition of the Ag–Cu–O films into a mixture of metallic silver and copper oxide. The electrical resistivities of silver oxide and copper oxide films formed at 303 K were 3 × 10−3 Ω cm and 29 Ω cm, respectively. The electrical resistivity of the films formed with Ag70Cu30 target at 303 K was 8.2 Ω cm and it decreased to 2.4 Ω cm with increase in substrate temperature to 523 K due to structural changes in the films. The optical band gap of the Ag–Cu–O films formed at 303 K increased from 1.60 to 1.95 eV with the increase of copper to silver atomic ratio from 0.10 to 0.30 in the films. The optical band gap of the films formed with Ag70Cu30 target increased from 1.95 to 2.15 eV with the increase in substrate temperature from 303 to 523 K, respectively.
Optically‐pumped lasing of semi‐polar InGaN/GaN(1122) heterostructures
Authors: Strittmatter A. , Teepe M. , Yang Z. , Chua C. , Northrup J. , Johnson N. M. , Spiberg P. , Brown R. G. W. , Ivantsov V. , Syrkin A. , Shapovalov L. , Usikov A.
Published: May 2010

Results for long‐wavelength emitters are presented for semi‐polar InGaN/AlGaN/GaN heterostructures grown on GaN(11‐22)/m‐sapphire templates by metalorganic chemical vapor deposition. The semi‐polar GaN layers were 10 to 25 μm thick and grown by HVPE on sapphire substrates. X‐ray diffraction measurements indicate high crystallographic quality that approaches that of GaN(0001) layers on sapphire. Growth studies on the semi‐polar GaN templates established the high efficiency of indium incorporation into InGaN layers, with a wide growth‐temperature window up to 800°C for green light emitting structures. Basic LEDs were fabricated with peak emission up to 527 nm wavelength. Further growth studies established conditions for growing reasonably smooth, undoped InGaN/GaN laser heterostructures suitable for optical pumping. Optically‐pumped lasing was achieved at wavelengths from 400 nm up to 500 nm. The results demonstrate the viability of semi‐polar GaN(11‐22) on sapphire templates for long‐wavelength nitride laser diodes (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Examination of intermediate species in GaN metal‐organic vapor‐phase epitaxy by selective‐area growth
Authors: Sugiyama Masakazu , Yasukochi Satoshi , Shioda Tomonari , Shimogaki Yukihiro , Nakano Yoshiaki
Published: May 2010

The major reactive intermediate species of GaN has been deduced and its surface reaction rate constant has been obtained through the analysis of multi‐scale growth‐rate profiles both in the reactor‐scale and in the micrometer‐scale that were obtained by selective‐area growth. Usually, it is difficult to explore surface reaction kinetics, especially for metal‐organic vapour phase epitaxy (MOVPE), because of mass‐transfer‐limited kinetics. This multi‐scale analysis, however, has clarified that a single precursor, a gas‐phase reaction product between (CH3)3Ga and NH3, leads to the growth of GaN with a surface reaction probability of approximately 0.4 at 1400 K which is a typical growth temperature of GaN. Contribution of higher‐order polymers was not significant in growth rate, but they seemed to be a cause of degraded surface morphology. A lumped reaction model of GaN MOVPE was proposed that led to reasonable agreement between a simulated growth‐rate profile in the reactor‐scale and a corresponding measured profile, which would lead to improved design of reactors and growth conditions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a ‐plane GaN
Authors: Badcock T. J. , Häberlen M. , Kappers M. J. , Moram M. A. , Dawson P. , Humphreys C. J. , Oliver R. A.
Published: May 2010

We investigate the optical properties of lateral epitaxially overgrown non‐polar a ‐plane GaN using photoluminescence and spatially resolved cathodoluminescence spectroscopy. Despite the decreased density of extended defects relative to a ‐plane templates, in material overgrown at a low V:III ratio (57), the low temperature emission spectrum is very weak and is dominated by impurity bands centred at 2.92 and 2.25 eV. On subsequent overgrowth at a higher V:III ratio (260), the intensity of the near band edge emission increases by many orders of magnitude and a donor‐acceptor pair band is seen. We suggest that the dramatic modification of the optical properties is related to the impurity or point‐defect incorporation rate at the different V:III ratios employed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Realization of extreme light extraction efficiency for moth‐eye LEDs on SiC substrate using high‐reflection electrode
Authors: Kawai Ryosuke , Kondo Toshiyuki , Suzuki Atushi , Teramae Fumiharu , Kitano Thukasa , Tamura Kenta , Sakurai Hisashi , Iwaya Motoaki , Amano Hiroshi , Kamiyama Satoshi , Akasaki Isamu , Chen Mark , Li Alex , Su Kidd
Published: May 2010

The effect of a high‐reflection electrode on the opposite side of a moth‐eye structure on the performance of a nitride‐based blue LED is described. Because of the interference effect enhanced by multiple reflections with a high‐reflectance Ag‐Pd‐Cu alloy (APC) p‐contact, light extraction is markedly improved. For the 600‐nm‐pitch sample, both APC and conventional Ni/Au contacts were used. Although the light output powers of LEDs with APC and Ni/Au p‐contacts without moth‐eye structure are almost the same, those with a moth‐eye structure are markedly increased and differ from each other. For the APC contact, the light output is improved by a factor of 3.4, whereas that with a Ni/Au contact is increased by a factor of 2.2. In addition, we fabricated moth‐eye LEDs with pitches of 300 nm, 400 nm, 500 nm and 600 nm by low‐energy electron‐beam projection lithography. We found that the sample with a pitch of 500 nm has the highest output power, which is 3.7 times higher than that of the reference sample. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Temperature control of multiple wafers during etching of 2′ sapphire wafers for patterned sapphire substrates (PSS)
Authors: Dineen Mark , Ren Zhong
Published: May 2010

This paper details the techniques developed to enable the simultaneous active cooling of 12 x 2′ sapphire wafers during RIE‐ICP etching. In order to maximise etch rates with Photoresist as a mask it is necessary to cool the wafer as during RIE‐ICP etching process the wafers experience heating from the plasma. If this thermal load is not controlled the wafer temperature becomes elevated which will push the Photoresist above its upper temperature limit and it can degrade. For plasma processing the wafers are placed on an electrode which is temperature controlled using a chiller. However because the processing occurs at low pressures, typically <5mtorr, there is little thermal contact between the electrode and the wafers. Temperature control of the samples is achieved by ensuring a constant He pressure is maintained at the non‐plasma facing side of each individual wafer. The etch process is then optimized giving an etch rate of 50nm/min, selectivity to PR mask 0.7:1 and a cross batch uniformity of +/‐5%, the etch feature is shown in the SEM below (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Intensive resistance by females before copulation induces insemination failure in the West Indian sweet potato weevil Euscepes postfasciatus
Authors: Kumano Norikuni , Kuriwada Takashi , Shiromoto Keiko , Haraguchi Dai , Kohama Tsuguo
Published: May 2010

Persistent mating attempts by males (sexual harassment) are frequently observed among animals. For females, resisting persistent males can be costly because vigorous resistance increases both energy expenditure and the possibility of injury. Although one tactic for coping with male harassment is to cease resistance and mate with the persistent partner, the females of several species are able to prevent the fertilization of their egg(s) despite copulation. In this study, we used three different sex ratios to investigate whether a male's mating persistence affects his mating success in the West Indian sweet potato weevil Euscepes postfasciatus, in which males mount females both before and after copulation. Consistent with our predictions, we found that female weevils resist and manipulate sperm transfer either before or during copulation according to their preferences. Female weevils were able to reject the sperm of persistent males despite having copulated with them. However, neither copulation and/or post‐copulatory mounting affected insemination success. We speculate that the intensive resistance shown by females before copulation may induce mechanical sterility in E. postfasciatus.
Adaptive management of sika deer populations in Hokkaido, Japan: theory and practice
Authors: Kaji Koichi , Saitoh Takashi , Uno Hiroyuki , Matsuda Hiroyuki , Yamamura Kohji
Published: May 2010

We investigated the utility of adaptive management (AM) in wildlife management, reviewing our experiences in applying AM to overabundant sika deer (Cervus nippon) populations in Hokkaido, Japan. The management goals of our program were: (1) to maintain the population at moderate density levels preventing population irruption, (2) to reduce damage to crops and forests, and (3) to sustain a moderate yield of hunting without endangering the population. Because of significant uncertainty in biological and environmental parameters, we designed a “feedback” management program based on controlling hunting pressure. Three threshold levels of relative population size and four levels of hunting pressure were configured, with a choice of four corresponding management actions. Under this program, the Hokkaido Government has been promoting aggressive female culling to reduce the sika deer population since 1998. We devised a harvest‐based estimation for population size using relative population size and the number of deer harvested, and found that the 1993 population size (originally estimated by extrapolation of aerial surveys) had been underestimated. To reduce observation errors, a harvest‐based Bayesian estimation was developed and the 1993 population estimate was again revised. Analyses of population trends and harvest data demonstrate that hunting is an important large‐scale experiment to obtain reliable estimation of population size. A serious side effect of hunting on sika deer was inadvertent lead poisoning of large birds of prey. The prohibition of the use of lead bullets by the Hokkaido Government was successful in reducing the lead poisoning, but the problem still remains. Two case studies on sika population irruption show that the densities set by maximum sustainable yield may be too high to prevent damage to agriculture, forestry, and/or ecosystems. Threshold management based on feedback control is better for ecosystem management. Since volunteer hunters favor higher hunting efficiency in resource management (e.g., venison), it is necessary to support the development of professional hunters for culling operations for ecosystem management, where lower densities of deer should be set for target areas. Hunting as resource management and culling for ecosystem management should be synergistically combined under AM.
Dissolution Study of Salt of Long Chain Fatty Acids (Soap Scum) in Surfactant Solutions. Part I: Equilibrium Dissolution
Authors: Soontravanich Sukhwan , Lopez Heyde E. , Scamehorn John F. , Sabatini David A. , Scheuing David R.
Published: May 2010

Dissolution of calcium salt of a long chain fatty acid or soap scum is a major challenge for hard surface cleaners since soap scum forms when soap is exposed to hard water and has very low water solubility. In this paper, the aqueous equilibrium solubility of calcium octadecanoate (or calcium stearate) was measured as a function of pH as well as chelating agent (ethylenediaminetetraacetate disodium salt) and surfactant concentrations. Anionic, nonionic, and amphoteric surfactants were studied. The highest soap scum solubility was observed at high pH with an amphoteric surfactant. Under this condition, the chelant effectively binds calcium, and the stearate anion forms mixed micelles well with the amphoteric surfactant, which is in zwitterionic form at high pH.
Q-TARO: QTL Annotation Rice Online Database
Authors: Yonemaru Jun-ichi , Yamamoto Toshio , Fukuoka Shuichi , Uga Yusaku , Hori Kiyosumi , Yano Masahiro
Published: May 2010

Over the past two decades, genetic dissection of complex phenotypes of economic and biological interest has revealed the chromosomal locations of many quantitative trait loci (QTLs) in rice and their contributions to phenotypic variation. Mapping resolution has varied considerably among QTL studies owing to differences in population size and number of DNA markers used. Additionally, the same QTLs have often been reported with different locus designations. This situation has made it difficult to determine allelic relationships among QTLs and to compare their positions. To facilitate reliable comparisons of rice QTLs, we extracted QTL information from published research papers and constructed a database of 1,051 representative QTLs, which we classified into 21 trait categories. This database (QTL Annotation Rice Online database; Q-TARO, http://qtaro.abr.affrc.go.jp/) consists of two web interfaces. One interface is a table containing information on the mapping of each QTL and its genetic parameters. The other interface is a genome viewer for viewing genomic locations of the QTLs. Q-TARO clearly displays the co-localization of QTLs and distribution of QTL clusters on the rice genome.
PHL 932: When Is a Planetary Nebula Not a Planetary Nebula?
Authors: Frew David J. , Madsen Greg J. , O'Toole Simon J. , Parker Quentin A.
Published: May 2010

The emission nebula around the subdwarf B (sdB) star PHL 932 is currently classified as a planetary nebula (PN) in the literature. Based on a large body of multi-wavelength data, both new and previously published, we show here that this low-excitation nebula is in fact a small Strömgren sphere (Hii region) in the interstellar medium around this star. We summarise the properties of the nebula and its ionizing star, and discuss its evolutionary status. We find no compelling evidence for close binarity, arguing that PHL 932 is an ordinary sdB star. We also find that the emission nebulae around the hot DO stars PG 0108 + 101 and PG 0109 + 111 are also Strömgren spheres in the ISM, and along with PHL 932, are probably associated with the same extensive region of high-latitude molecular gas in Pisces–Pegasus.
New Candidate Planetary Nebulae in the IPHAS Survey: the Case of Planetary Nebulae with ISM interaction
Authors: Sabin Laurence , Zijlstra Albert A. , Wareing Christopher , Corradi Romano L. M. , Mampaso Antonio , Viironen Kerttu , Wright Nicholas J. , Parker Quentin A.
Published: May 2010

We present the results of the search for candidate Planetary Nebulae interacting with the interstellar medium (PN–ISM) in the framework of the INT Photometric Hα Survey (IPHAS) and located in the right ascension range 18–20 h. The detection capability of this new Northern survey, in terms of depth and imaging resolution, has allowed us to overcome the detection problem generally associated to the low surface brightness inherent to PNe-ISM. We discuss the detection of 21 IPHAS PN–ISM candidates. Thus, different stages of interaction were observed, implying various morphologies i.e. from the unaffected to totally disrupted shapes. The majority of the sources belong to the so-called WZO2 stage which main characteristic is a brightening of the nebula's shell in the direction of motion. The new findings are encouraging as they would be a first step into the reduction of the scarcity of observational data and they would provide new insights into the physical processes occurring in the rather evolved PNe.
The Macquarie–Strasbourg Connection
Authors: Acker Agnès
Published: May 2010

Planetary nebulae (PN) are powerful tracers of both stellar and Galactic evolution. The capacity of PN to perform these studies is critically dependent on the size of the population, a major problem with a remarkable advance thanks to Quentin Parker and his team, who from 1997 to 2008 discovered an unprecedented sample of ∼1250 PN with the deep, high resolution AAO/UKST SuperCosmos Halpha Survey (SHS) of the Southern Galactic Plane (Parker et al. 2005), doubling the sample collected over the previous century, and leading to ∼2700 for the number of known PN today. A highly productive collaboration between Quentin and I has been established since 2001. Our complementary levels of expertise and facilities constitute the Macquarie/AAO/Strasbourg H-α Planetary Nebulae Project.

The new MASH PN were added to the Centre de Données de Strasbourg as a new PN database continuously updated, and detailed in Parker et al. (2006) and Miszalski et al. (2008). In the framework of a cotutelle agreement between the Strasbourg and Macquarie universities, two PhD projects based on MASH PN have been conducted under the supervision of Quentin and myself, both projects focusing on the mysterious crowded region of the Galactic Bulge. Alan Peyaud proposed new constraints on late stages of stellar evolution and on the dynamics of the Galactic Bulge (defence 21 December 2005, Strasbourg). Brent Miszalski discovered ∼360 new PN (MASH-II) completing the largest and most representative sample of PN towards the Galactic bulge (defence 15 August 2009).
Quantitative prediction of intermittent high-frequency oscillations in neural networks with supralinear dendritic interactions
Authors: Memmesheimer Raoul-Martin
Published: May 2010

The explanation of higher neural processes requires an understanding of the dynamics of complex, spiking neural networks. So far, modeling studies have focused on networks with linear or sublinear dendritic input summation. However, recent single-neuron experiments have demonstrated strongly supralinear dendritic enhancement of synchronous inputs. What are the implications of this amplification for networks of neurons? Here, I show numerically and analytically that such networks can generate intermittent, strong increases of activity with high-frequency oscillations; the models developed predict the shape of these events and the oscillation frequency. As an example, for the hippocampal region CA1, events with 200-Hz oscillations are predicted. I argue that these dynamics provide a plausible explanation for experimentally observed sharp-wave/ripple events. High-frequency oscillations can involve the replay of spike patterns. The models suggest that these patterns may reflect underlying network structures.
A dual function of V0-ATPase a1 provides an endolysosomal degradation mechanism in Drosophila melanogaster photoreceptors
Authors: Williamson W. Ryan , Wang Dong , Haberman Adam S. , Hiesinger P. Robin
Published: May 2010

The vesicular adenosine triphosphatase (v-ATPase) is a proton pump that acidifies intracellular compartments. In addition, mutations in components of the membrane-bound v-ATPase V0 sector cause acidification-independent defects in yeast, worm, fly, zebrafish, and mouse. In this study, we present a dual function for the neuron-specific V0 subunit a1 orthologue v100 in Drosophila melanogaster. A v100 mutant that selectively disrupts proton translocation rescues a previously characterized synaptic vesicle fusion defect and vesicle fusion with early endosomes. Correspondingly, V100 selectively interacts with syntaxins on the respective target membranes, and neither synaptic vesicles nor early endosomes require v100 for their acidification. In contrast, V100 is required for acidification once endosomes mature into degradative compartments. As a consequence of the complete loss of this neuronal degradation mechanism, photoreceptors undergo slow neurodegeneration, whereas selective rescue of the acidification-independent function accelerates cell death by increasing accumulations in degradation-incompetent compartments. We propose that V100 exerts a temporally integrated dual function that increases neuronal degradative capacity.
Regulation of basal cellular physiology by the homeostatic unfolded protein response
Authors: Rutkowski D. Thomas , Hegde Ramanujan S.
Published: May 2010

The extensive membrane network of the endoplasmic reticulum (ER) is physically juxtaposed to and functionally entwined with essentially all other cellular compartments. Therefore, the ER must sense diverse and constantly changing physiological inputs so it can adjust its numerous functions to maintain cellular homeostasis. A growing body of new work suggests that the unfolded protein response (UPR), traditionally charged with signaling protein misfolding stress from the ER, has been co-opted for the maintenance of basal cellular homeostasis. Thus, the UPR can be activated, and its output modulated, by signals far outside the realm of protein misfolding. These findings are revealing that the UPR causally contributes to disease not just by its role in protein folding but also through its broad influence on cellular physiology.
Adaptive behavior of bacterial mechanosensitive channels is coupled to membrane mechanics
Authors: Belyy Vladislav , Kamaraju Kishore , Akitake Bradley , Anishkin Andriy , Sukharev Sergei
Published: May 2010

Mechanosensitive channel of small conductance (MscS), a tension-driven osmolyte release valve residing in the inner membrane of Escherichia coli, exhibits a complex adaptive behavior, whereas its functional counterpart, mechanosensitive channel of large conductance (MscL), was generally considered nonadaptive. In this study, we show that both channels exhibit similar adaptation in excised patches, a process that is completely separable from inactivation prominent only in MscS. When a membrane patch is held under constant pressure, adaptation of both channels is manifested as a reversible current decline. Their dose–response curves recorded with 1–10-s ramps of pressure are shifted toward higher tension relative to the curves measured with series of pulses, indicating decreased tension sensitivity. Prolonged exposure of excised patches to subthreshold tensions further shifts activation curves for both MscS and MscL toward higher tension with similar magnitude and time course. Whole spheroplast MscS recordings performed with simultaneous imaging reveal activation curves with a midpoint tension of 7.8 mN/m and the slope corresponding to ∼15-nm2 in-plane expansion. Inactivation was retained in whole spheroplast mode, but no adaptation was observed. Similarly, whole spheroplast recordings of MscL (V23T mutant) indicated no adaptation, which was present in excised patches. MscS activities tried in spheroplast-attached mode showed no adaptation when the spheroplasts were intact, but permeabilized spheroplasts showed delayed adaptation, suggesting that the presence of membrane breaks or edges causes adaptation. We interpret this in the framework of the mechanics of the bilayer couple linking adaptation of channels in excised patches to the relaxation of the inner leaflet that is not in contact with the glass pipette. Relaxation of one leaflet results in asymmetric redistribution of tension in the bilayer that is less favorable for channel opening.
Proton block of the CLC-5 Cl−/H+ exchanger
Authors: Picollo Alessandra , Malvezzi Mattia , Accardi Alessio
Published: May 2010

CLC-5 is a H+/Cl− exchanger that is expressed primarily in endosomes but can traffic to the plasma membrane in overexpression systems. Mutations altering the expression or function of CLC-5 lead to Dent’s disease. Currents mediated by this transporter show extreme outward rectification and are inhibited by acidic extracellular pH. The mechanistic origins of both phenomena are currently not well understood. It has been proposed that rectification arises from the voltage dependence of a H+ transport step, and that inhibition of CLC-5 currents by low extracellular pH is a result of a reduction in the driving force for exchange caused by a pH gradient. We show here that the pH dependence of CLC-5 currents arises from H+ binding to a single site located halfway through the transmembrane electric field and driving the transport cycle in a less permissive direction, rather than a reduction in the driving force. We propose that protons bind to the extracellular gating glutamate E211 in CLC-5. It has been shown that CLC-5 becomes severely uncoupled when SCN− is the main charge carrier: H+ transport is drastically reduced while the rate of anion movement is increased. We found that in these conditions, rectification and pH dependence are unaltered. This implies that H+ translocation is not the main cause of rectification. We propose a simple transport cycle model that qualitatively accounts for these findings.
Special issue
containing papers presented at the 12th International Workshop on H-mode
Physics and Transport Barriers
Authors: T.S. Hahm
Published: May 2010

The 12th International Workshop
on H-mode Physics and Transport Barriers was held at the Princeton Plasma
Physics Laboratory, Princeton, New Jersey, USA between September 30 and
October 2, 2009. This meeting was the continuation of a series of previous
meetings which was initiated in 1987 and has been held bi-annually since then.
Following the recent tradition at the last few meetings, the program was sub-
divided into six sessions. At each session, an overview talk was presented,
followed by two or three shorter oral presentations which supplemented the
coverage of important issues. These talks were followed by discussion periods
and poster sessions of contributed papers. The sessions were: Physics of
Transition to/from Enhanced Confinement Regimes, Pedestal and Edge Localized
Mode Dynamics, Plasma Rotation and Momentum Transport, Role of 3D Physics in Transport Barriers,
Transport Barriers: Theory and Simulations and High Priority ITER Issues on Transport Barriers.

The diversity of the 90 registered participants was remarkable, with 22 different nationalities. US participants were in the majority (36), followed by Japan (14), South Korea (7), and China (6). This special issue of Nuclear Fusion consists of a cluster of 18 accepted papers from submitted manuscripts based on overview talks and poster presentations. The paper selection procedure followed the guidelines of Nuclear Fusion which are essentially the same as for regular articles with an additional requirement on timeliness of submission, review and revision. One overview paper and five contributed papers report on the H-mode pedestal related results which reflect the importance of this issue concerning the successful operation of ITER. Four papers address the rotation and momentum transport which play a crucial role in transport barrier physics. The transport barrier transition condition is the main focus of other four papers. Finally, four
additional papers are devoted to the behaviour and control of Edge Localized Modes.

The selection of topics and overview speakers and the scientific programme
were carried out by the International Advisory Committee, consisting of: R. Groebner (GA, USA), T.S. Hahm (PPPL, USA--Chair), A. Hubbard (MIT, USA), K. Ida (NIFS, Japan), S. Lebedev (Ioffe Institute, Russia), N. Oyama (JAEA, Japan), G. Saibene (F4E, EU) and W. Suttrop (IPP, Germany).

Their work, advice, and participation contributed to the success of the meeting. Finally, I would like to express deep gratitude to J. Jones and B. Sarfaty
who took care of numerous issues relating to the organization of the meeting, and to J.K. Park and several graduate students of the Princeton University Plasma Physics Program for helping with the transportation of participants.
Modification of H-mode pedestal structure with lower hybrid waves on Alcator C-Mod
Authors: Hughes J.W. , Hubbard A.E. , Wallace G. , Greenwald M. , LaBombard B. , Lin L. , McDermott R.M. , Parker R.R. , Reinke M.L. , Rice J.E. , Wilson J.R.
Published: May 2010

The application of lower hybrid range of frequencies (LHRF) waves in H-mode plasmas on Alcator C-Mod can result in a significant reduction in core particle inventory, with no significant degradation of energy confinement. This phenomenon has been observed in steady enhanced Dα (EDA) H-mode targets, which are sustained by ion cyclotron RF auxiliary heating, in which pedestal density n
ped is usually tied firmly to plasma current I
P and shows a strong resilience to changes in the edge neutral source. Upon application of up to 1 MW LHRF power, n
ped is reduced by up to 30%, while the temperature profile increases simultaneously such that the pressure pedestal remains constant or is slightly increased. Steady EDA H-mode operation with no edge-localized modes can be maintained while edge collisionality is reduced by factors of reduction of 2–4. Elevation of scrape-off layer (SOL) density and electric currents accompany the application of LHRF (at levels as low as 400 kW) with a fast time response (∼10−2 s), while full density pedestal relaxation and core density reduction occur on longer time scales (∼10−1 s). A similarly prompt counter-I
P change in the edge toroidal velocity is also observed in response to LHRF, followed on longer time scales by a counter-I
P change in the central rotation. The range of time scales of the plasma response may indicate that the radial locations of LHRF interactions (i.e. SOL versus core), and power deposition mechanisms, are evolving in time. Understanding the responsible physical mechanisms and applying them to a broad range of discharges could provide a tool for improved H-mode density control.