bluuebunny/crossref_metadata_2025 huggingface dataset:
Theoretical Considerations on Bragg-case Diffraction of X-rays at a Small Glancing Angle
Authors: Kishino Seigô , Kohra Kazutake
Published: November 2005

X-ray diffraction phenomenon, for which the glancing angle of the incident beam is so small that the effect of specular reflection can not be neglected, is studied theoretically. Two wave fields, one of which is usually neglected, are considered as the solution of the dispersion equation, and the boundary conditions of the waves are considered for the gradient of amplitude normal to the surface besides the amplitude. Numerical calculations are made for (220) reflection of CuKα1 from a germanium single crystal. The diffracted beam is stronger in intensity and broader in half-value width than that where specular reflection is not considered.
Annealing effects on Galvanomagnetic Properties of Heavily Radiation-Damaged Graphite
Authors: Tsuzuku Takuro , Arai Shiro
Published: November 2005

An annealing study of radiation-damage in graphite has been made through the observation of the changes in electrical resistivity, Hall coefficient and magnetoresistance at room and liquid-nitrogen temperatures. The specimen examined is a pile-grade polycrystalline graphite bombarded with fast neutrons at 30°C to total dose of 5.8×1020nvt. The isothermal annealing is performed in a stepwise manner at temperatures from 200°C up to 2400°C. The recovery diagrams are characterized by the presence of two major stages lying on the annealing temperature axis; the relatively small one around 300°C and the bigger around 1300°C. Based on a parabolic two-band representation for the electronic structure, thorough analyses are made of the whole data, which lead to a coherent description of the recovery process in terms of the following parameters; the density and mobility of conduction carriers, the overlap of upper and lower bands and the location of the Fermi level. Discussions are also given in relation to the defect structure.
Behavior of Thiourea Additive in the Electrodeposition Process of Iron Thin Film
Authors: Kuriki Shinya , Satō Masayoshi , Maeda Masao
Published: November 2005

The process of sulfur incorporation into electrodeposited iron films during the operation with thiourea as an addition agent in the plating-bath is investigated. The amounts of sulfur and iron deposited on the substrate are measured, and the rate of sulfur incorporation and the rate of iron deposition are determined.
In the operation of large rate of iron deposition, it is considered that the rate of sulfur incorporation is controlled by the diffussion process of thiourea molecules near the cathode in the bath. In the operation of extremely small rate of iron deposition, it is considered that thiourea is adsorbed at the cathode, and that the reaction of thiourea molecules with ferrous ions at the cathode is the rate-controlling step for sulfur incorporation.
Diffraction of Light by Ultrasound: Extension of the Brillouin Theory
Authors: Nomoto Otohiko
Published: November 2005

Intensity distribution amongst various orders of the diffraction spectrum produced by ultrasonic-wave grating is obtained by extending the Brillouin's theory [Actualités Scientifiques et Industrielles, No. 59 (1933)]. Numerical computation is performed by using the values of the expansion coefficients of the Mathieu functions and their characteristic values as obtained from “Tables Relating to Mathieu Functions” prepared by the National Bureau of Standards (Columbia Univ. Pr. 1951). Computations up to θ=6.25 is possible by using this table, while the original Brillouin theory is valid for θ\lesssim0.1. Here θ=n
0δn
0\varLambda2/λ2, where n
0 is the index of refraction of the medium and δn
0 its variation in the sound field, and \varLambda and λ are the wavelength of sound and light, respectively.
Surface Wave Delay Lines with Interdigital Transducers on Unpolarized PZT Ceramic Plates
Authors: Toda Kozi , Kawabata Akira , Tanaka Tetsuro
Published: November 2005

Characteristics of surface wave delay lines with interdigital transducers on unpolarized PZT ceramic plates are studied. The slower sound velocity in an unpolarized PZT plate insures a longer delay time compared to that of the prepolarized plate with the same dimension. The polarizing treatment is given only to the parts of the specimen under the electrodes to convert them into transducers by a DC electric field of 1,500 V/mm at 80°C for 10 to 20 hours and a subsequent aging at 120° for 10 to 20 hours. This polarizing treatment makes it possible to excite a surface wave of a shorter wavelength compared with those excited in a uniformly polarized sample. Thus a higher center frequency of the delay line can be obtained. Preliminary results on the attenuation constant of surface waves in the delay lines are presented.
Piezoelectric Constant in Oriented β-form Polypeptides
Authors: Fukada Eiichi , Takashita Saburo
Published: November 2005

Piezoelectric constant and its temperature variation are determined in oriented films of poly-γ-methyl-L-glutamate with the β-form molecular conformation. Semi-quantitative calculation of piezoelectric constants is performed on the basis of a molecular model of pleated sheet structure. Shearing force in the plane of the sheet brings about slide between two adjacent extended polypeptides molecules. The plane of CONH dipole then rotates around the axis of the main chain, which produces an electric polarization. The estimated piezoelectric stress-constant for a single crystal of β-form poly-γ-methyl-L-glutamate is e
14=-2.8×104 cgse.s.u.. If the degree of crystallinity X

c
=5%, the degree of orientation \varPiα=70% and the symmetry due to uniaxial orientation of the molecules are taken into consideration, e
14=-5×102 cgse.s.u. is obtained for the present specimen, which agrees with the experimental observation.
Infrared Holography with Liquid Crystals
Authors: Sakusabe Takashi , Kobayashi Shunsuke
Published: November 2005

Infrared holography by using CO2 laser radiation (10.6 µm) is demonstrated. Cholesteric liquid crystals having a response range from 26°C to 31°C and 34°C to 37°C are used as a holographic recording medium in the infrared wavelengths. A hologram represented on the liquid crystal detector is then recorded photographically on an ordinary film and is reconstructed by a 6328Å He–Ne laser beam. It is shown that the observed values of demagnification and the positions of reconstructed images of the IR holography are well represented by calculations based on the Meier's theory.
The Range of Fission Fragments in Air Determined by Fission Track Detector
Authors: Su Ching-shen , Wu Wei-kuo
Published: November 2005

Fission track detector is used to determine the range of fission fragments in air. A linear transmission curve is obtained for the number of fission tracks registered on the glass detector as a function of fission source to detector separation. Extrapolated range of fission fragments of 235U in air is determined to be 2.16±0.11 cm.
An X-ray Investigation of Thermal Mean-Square Atomic Displacements in Magnesium, Cadmium and Mg3Cd
Authors: Watanabe Yousuke , Iwasaki Hiroshi , Ogawa Shiro
Published: November 2005

Measurements have been made of integrated intensities ofX-ray symmetrical reflections from single crystals of magnesium, cadmium and Mg3Cd, kept at temperatures ranging from room temperature to about 90°K. It is observed that the thermal mean-square atomic displacements along two directions, the one parallel to the hexagonalc-axis \overlineuz2and the other perpendicular to thec-axis \overlineux2, are nearly the same in Mg3Cd, showing little anisotropy. The result suggests that thermal vibrational amplitudes in the alloy can not be a simple average of those in magnesium and cadmium. No appreciable difference is observed between the mean-square displacements of an ordered and an imperfectly ordered Mg3Cd. The mean-square atomic displacements is calculated for magnesium and cadmium applying Zener's theory of thermal vibration in hexagonal crystals and is compared with the observed displacements. Discussions are given on the correlation between \overlineuz2/\overlineux2and the axial ratio,c/a, of hexagonal close-packed metals and also on the the thermal mean-square displacements in alloys.
Further Studies of Far-Field Diffraction by Modified Annular and Annulus Apertures
Authors: Asakura Toshimitsu , Nagai Shohei
Published: November 2005

Expressions are obtained for the three-dimensional irradiance distribution of aberration-free diffraction patterns by semitransparent and phase, annular and annulus apertures. The irradiance distributions in the geometrical focal plane and along the optical axis have been given for several cases of annular and annulus apertures. The results are discussed and illustrated graphically.
Effect of Dy3+ on the Luminescence of Y3OCl7:Yb3+.Er3+
Authors: Seki Yasuo , Furukawa Yoshitaka
Published: November 2005

Conversion efficiency of infrared stimulable phosphor Y3OCl7:Yb3+.Er3+ is significantly influenced by the presence of a trace of Dy2O3 in the starting materials. In the present experiments, effects of Dy3+ on the luminescence of Y3OCl7:Yb3+.Er3+ were examined under infrared and ultraviolet excitations at room temperature. The experiments indicate that degradation of the conversion efficiency is primarily due to depopulation of 4I11/2(Er3+) and 2F5/2(Yb3+) as a result of energy transfer from Er3+ and Yb3+ to Dy3+.
Über die Entzündung eines n-Hexan-Luft-Gemisches durch Laserstrahlung
Authors: Terao Kunio , Ozaki Hiroshi , Kimura Koji , Tsuboi Takao
Published: November 2005

The ignition of an n-hexane-air mixture by a coherent light beam of a giant pulse laser was investigated by a statistical method. By analyzing the ignition probability and the development time from the ignition reaction to the formation of a measurable nucleus, which were calculated from the fluctuation of the ignition time-lags, the energy transferred from the light beam to the ignition reaction was estimated. The results suggest that the laser beam does not give energy directly to the developing process but only to the initiation of the ignition reaction. The development of the ignition reaction is accelerated during the breakdown process. That the quantitative effect on the ignition increases is due solely to the enlargement of the focal circle in the case of strong laser beam, while the actual energy supplied from the laser beam to the ignition reaction decreases. This means that there is an optimum energy of the laser beam for the ignition.
Some Compounds of Tungsten-Bronze Type A6B10O30 (B=Nb, Ti or Nb, W)
Authors: Ikeda Takuro , Haraguchi Takashi , Onodera Yasuhiko , Saito Tsutomu
Published: November 2005

Effects of substituting Ti or W for Nb in A6B10O30-type niobates are examined. The general formula of the sample studied here is described as A
n

p+A6-n

q+B
m

r+Nb10-m

5+O30, where B
r+=Ti4+ or W6+ and A1+=K, Na, A2+=Ba, Sr, A3+=Bi, La. There are found several tungsten-bronze type compounds. In order to elucidate the effect of Ti or W substitutions, they are classified on the basis of ionic radii and the value of n (or m), and the tungsten-bronze field is roughly determined. Variations with composition of lattice parameters and dielectric peak temperatures are considered based on the present classification.
A New Resistor Having An Anomalously Large Positive Temperature Coefficient
Authors: Ohe Kazuyuki , Naito Yoshihide
Published: November 2005

A new thermistor, which shows an anomalously large positive temperature coefficient of electrical resistivity, has been found. The resistivity of the materials increases monotonically between 20°C and 85°C, and the resistivity at 85°C is 106∼108 times of that at 20°C. The sample is prepared by mixing graphite powder with a melted mixture of paraffin and polyethylene. The temperature sensitive electrical resistivity of the sample mainly depends on the resistivity of intergrain gaps between graphite particles. The resistance at the intergrain gaps is attributable to the tunneling current, because the field dependence of resistivity calculated theoretically based on the tunneling effect agrees well with the experimental data. The variation of electrical resistance of this mixture originates in the variation of the width of the intergrain gaps caused by the displacement of the graphite grains due to the rise of temperature.
Generation and Detection of Elastic Surface Waves with ZnO Film Transducers
Authors: Inaba Ritsuo , Kajimura Koji , Mikoshiba Nobuo
Published: November 2005

Effects of various configurations of interdigital electrodes on the generation and detection of elastic surface waves are studied by using sputtered ZnO transducers. It is found that the insertion loss of ZnO film transducers decreases considerably when a metal film is plated between a substrate and a ZnO film on which interdigital electrodes are deposited.
Linear Electrooptic Properties of ZnTe at 10.6 Microns
Authors: Tada Kunio , Aoki Masaharu
Published: November 2005

The low-frequency linear electrooptic coefficientr41Tin semi-insulating ZnTe is measured at 10.6 µm at room temperature. The measured value is (3.9±0.2)×10-12m/V, which is only slightly smaller than that in the visible region. This result seems consistent with a lattice theory on the dispersion ofr41Tin crystals of a zincblende structure [D.P. Akittet al; IEEE J. Quantum Electronics QE-6 (1970) 496]. The induced birefringence in ZnTe at 10.6 µm is about 30 percent larger than that in GaAs, and about 35 percent smaller than that in CdTe. The figure of merit for the materialF1(that is inversely proportional to the electric power necessary for a lumped modulator) at 10.6 µm is found to be twice as large in ZnTe as in GaAs, which is the material most widely used for the electrooptic light modulation at 10.6 µm.
Some Electrical Properties of ZnGeP2 Crystals
Authors: Somogyi K. , Bertóti I.
Published: November 2005

Hall effect and thermoelectric power are measured on p-type ZnGeP2 single crystals. The ZnGeP2 crystals are grown from Bi melt using the solution growth technique. The typical hole concentration 1×1013 cm-3 and mobility 18 cm2/Vsec obtained from Hall measurements differ considerably from that (1×1016 cm-3 and 1 cm2 Vsec resp.) calculated from temperature slope of resistance by B. Ray, but are in good agreement with results of only Hall measurements reported earlier. An acceptor energy level of 0.35 eV is derived from the temperature dependence of the Hall constant. The donor and acceptor concentrations are calculated supposing the neutral impurity scattering to be dominant. An approximative value of the effective mass of holes m

h

*=(0.5±0.1)m
0 is determined from the values of the thermoelectric power.
Internal Stress at Lüders Band Front of KCl-KBr Solid Solution Single Crystals
Authors: Kataoka Toshihiko , Okuda Shogo , Yamada Tomoharu
Published: November 2005

KCl-KBr crystals show Lüders deformation with remarkable serrations. The stress components associated with the Lüders band front are measured by a photoelastic method and compared with those calculated on the basis of a proposed dislocation model.
A polygonized edge dislocation wall is formed at the band front and dislocations with both positive and negative signs remain at random behind the wall. This wall induces a long range stress field when it rotates slightly from the symmetrical position. The stress field is evaluated by superposing the stresses of individual dislocations in the present model and the result is shown to agree with the measurements. The shear stress on a glide plane is very small while the large normal stress is caused on both sides of the polygon wall. The sign of normal stress changes according as the wall rotates clockwise or counterclockwise.
Acoustoelectric Phenomena by the Two Carriers in Se-Te Alloy Crystals
Authors: Shiosaki Tadashi , Matsumoto Heihachi , Kawabata Akira
Published: November 2005

The band gap width was increased by adding selenium into tellurium. Therefore the acoustoelectric phenomena, i.e. current oscillation and saturation appeared even at room temperatures and above in Se5Te95, Se10Te90, Se15Te85 and Se20Te80 alloy crystals. The measured temperature dependence of these phenomena is explained by a theory of the acoustoelectric current in the extrinsic material influenced by the minority carriers [M. Fink and G. Quentin: Phys. Status solidi (a)4 (1971) 397].
The acoustoelectric effect by electrons appeared at about 20 V/cm at room temperatures. The electron mobility obtained from the threshold electric field for the effect was 10–20 times larger than that of holes. The alloy crystals may be the first crystals which effected, at room temperatures, the ultrasonic amplification by minority carriers proposed theoretically by C. A. A. J. Greebe and P. A. van Dalen [Philips Res. Rep. 24 (1969) 168; Phys. Letters 28A (1968) 455].
Ac Conductivity of Amorphous As2Se3
Authors: Kitao Michihiko
Published: November 2005

Electrical conduction in amorphous As2Se3 is investigated at frequencies from 30 Hz to 10.3 GHz in the temperature range -180° to 500°C. The observed conductivity σ can be expressed as a sum of dc conductivity σdc and ac conductivity σac, namely σ=σdc+σac. The quantity σdc depends exponentially on reciprocal temperature. The contribution of σac to σ is negligible at high temperature. At low temperature, σac is nearly independent of temperature but strongly depends on the frequency. The frequency dependence of σac is linear and quadratic in the frequency range up to 106 Hz and between 106 and 108 Hz, respectively, and above 108 Hz, σac has no frequency dependence. The experimental results of the conductivity of amorphous As2Se3 cannot be interpreted by the hopping conduction only, and the effects of spatial inhomogeneity may be responsible for the conduction mechanisms in amorphous As2Se3.
Electron Diffraction Study on the Structure of the Au-Cu-Zn Martensites
Authors: Murakami Yūichiro , Nakanishi Norihiko , Kachi Sukeji
Published: November 2005

The structure of the Au
x
Cu55-x
Zn45 martensites is investigated by electron microscopy and diffraction. Two types of martensites, β1' and γ1' are observed. (i) The β1' martensite has a long period stacking order with an orthorhombic symmetry (18R structure) having 18 layers in a unit cell. There exists some twin-like orientation between these β1' martensites. (ii) The γ1' martensite has a 2H structure having internal twins. The twinning plane is the (121) plane of the orthorhombic lattice.
The X-ray diffraction patterns of the Au
x
Cu55-x
Zn45 martensite are explained in terms of the coexistence of the 18R and 2H structures in the composition range from x=18 to 30. Outside of this range, a mixture of 9R and 2H is observed.
Response Time of Metal-Insulator-Metal Tunnel Junctions
Authors: Nagae Moichiro
Published: November 2005

The current response to a step input voltage is calculated on the basis of the assumption that the decay of each elementary current caused by scattering is slow enough. The exponential decay is not assumed. A general expression for the response time τ is obtained in the case of a square potential-barrier model. When the bias voltage V is so small that e
V≪Δ
ε, where -e is the electron charge and Δ
ε≡\hbar{w(2m/W)1/2}-1 (w is the barrier thickness, m the electron mass and W the height of the potential barrier above the Fermi energy), τ is approximately given by \hbar/(2Δ
ε); τ≈1.7×10-15 s and Δ
ε≈0.2 eV are obtained when w=20 Å and W=4 eV. At large biases e
V≫Δ
ε, the current response consists of two parts: one part with the response time of the form \hbar/(e
V)+\hbar/Δξ (Δξ is w-independent and Δξ≫Δ
ε) and the other part which responds instantaneously to the input voltage.
An Electrostatic Torquemeter for Magnetic Film Measurements
Authors: Dey S. K.
Published: November 2005

An electrostatic torquemeter based on the principle of heterostatic use of a quadrant electrometer is described for measurement of magnetic film properties. Typical torque curves for vertical and horizontal permalloy films are provided as illustrations. A sensitivity of 2.8×10-4 dyne cm is easily attainable under normal laboratory set up.
Wiener Apodization Problem
Authors: Kusakawa Tohru , Okudaira Sadao
Published: November 2005

Wiener apodization problem is discussed by considering the passivity of the optical system. The minimization of the second-order moment of the irradiance diffraction pattern under the prespecified Strehl definition is executed by the conjugate gradient method. The analytic representation of the pupil function to minimize the second-order moment when the Strehl definition is unspecified is also given.
Analytical Examinations of Negative Resistance Due to Double Injection Model
Authors: Kurosu Tateki , Iida Masamori
Published: November 2005

Well-known mechanisms of current controlled negative resistance in junction diode containing deep impurities are examined by using a criterion function developed by authors. One of these mechanisms is transit time modulation mechanism proposed by Lampert and the other is optical feedback process developed by Dumke. Physical conditions for the occurrence of negative resistance are obtained by applying the criterion to these model: (1) the capture cross-section of deep impurity center for hole is larger than one for free electron, (2) the density of deep impurity center is sufficiently high. In the case of Dumke model where quantum efficiency γ is proportional to current density J, i.e., γ=c
J where c is constant. Conditions for negative resistance are as follows: (1) c is smaller than 1 [cm2 sec/coulomb], (2) the density of recombination center in the intrinsic region is high.
Light Diffraction and Light Scattering in Nematic Liquid Crystals with a Positive Dielectric Anisotropy
Authors: Takase Akira , Sakagami Sakumitsu , Nakamizo Minoru
Published: November 2005

A light diffraction pattern is observed in nematic liquid crystals with a positive dielectric anisotropy and is found to agree with that of a grating consisting of periodic slits spaced at nearly equal intervals. The sequence of diffraction spots extends along a direction perpendicular to the rubbing direction of the glass electrode surfaces. At a higher electric field, the characteristic light scattering pattern is observed, the shape of which is the well-known four-leaf-clover with a weak scattered light intensity indicating the existence of domains with a shape similar to that of polymer spherulites.
Dielectric Study of the Phase Transitions in (NH4)3H(SO4)2 at Low Temperatures
Authors: Gesi Kazuo
Published: November 2005

Dielectric constant of the (001)-plate of (NH4)3H(SO4)2 was measured in a temperature range from room temperature to that of liquid helium. A λ-type anomaly was found at about 46 K and 78 K on cooling and heating, respectively. Measurements on partially-deuterated crystals show that the anomaly corresponds to a phase transition from non-ferroelectric V phase to a ferroelectric VII phase.
Change in Intensity of Radiophotoluminescence in Dosimeter Glass by Intense Laser Light
Authors: Ugumori Tadaki
Published: November 2005

Luminescence is investigated in dosimeter glasses under intense excitation by a N2 laser. The maximum excitation intensity is about 1 MW/cm2. Decrease and increase in emission intensity are observed in γ-irradiated and nonirradiated glasses, respectively. The decreasing curves are analyzed by using simple rate equations. The increase in emission intensity is attributable to the creation of luminescent centers by two-photon excitation caused by intense laser light. These effects are negligible under weak excitation (<100 kW/cm2).
A Study of Exchange Anisotropy in Co-CoO Evaporated Thin Films
Authors: Takahashi Minoru , Yanai Akio , Taguchi Shinji , Suzuki Takao
Published: November 2005

A systematic study of ferromagnetic-antiferromagnetic coupling in Co-CoO evaporated thin films with thicknesses from 300 to 1400 Å has been carried out by measuring hysteresis loops and torque curves in the temperature range from 77 to 630 K. The effect of the cooling conditions on exchange anisotropy is described. The unidirectional anisotropy constant J
k is nearly constant (≈0.1±0.05 erg/cm2) for this thickness range. The external magnetic field is not the essential factor responsible for the exchange anisotropy, but it is the ferromagnetic domain state present which is responsible for the observed loop shift as well as rotational hysteresis loss in torque curves. A model is proposed to account for the observed loop shift, which is supported by the domain observation.
Interface Reaction of SiO2 and GaAs during High-Temperature Heat-Treatments
Authors: Mizutani Shuzo , Mori Mutsuhiro , Ono Tetsuo , Miyazawa Takeo , Ohdomari Iwao
Published: November 2005

Transmission electron microscopy (TEM) has been used to investigate an interface structure of a SiO2/GaAs system after high-temperature heat treatments.
A (0001)-oriented single crystal GaAsO4 was observed on (100)GaAs and a twinned GaAsO4 on (111)GaAs.
Intracavity Pumped Far-Infrared Lasers by TE CO2 Laser
Authors: Hirose Hideo , Kon Shozo
Published: November 2005

A novel compact FIR laser system was constructed. The FIR laser cavity was placed inside the resonator of a pump TE CO2 laser. With this system, FIR laser actions in D2O and CH3OH were observed. Five new lines were found in CH3OH.
Characteristics of n-Pb0.88Sn0.12Te Spin Flip Raman Laser Pumped by a TE CO2 Laser
Authors: Yasuda Kazuhito , Shirafuji Junji
Published: November 2005

Characteristic of n-Pb0.88Sn0.12Te spin-flip Raman (SFR) laser pumped by a TE CO2 laser has been studied. For the laser cavity, a crystal with n
e=1017 cm-3 at 77 K and dimension of 5×4×3 mm3 is used. The lasing threshold is 0.6 MW·cm-2 at the pump frequency of 10.54 µm. The Stokes frequency shift up to 100 cm-1 is obtained at magnetic field of 41 kG. The tuning rate is slightly dependent on magnetic field and the typical value is about 2.65 cm-1·kG-1. The resonance enhancement in the SFR gain is confirmed by the measurement of the pump wavelength dependence or the output power. The variation of the Stores output power with magnetic field is tentatively understood in terms of magnetic field dependences of the resonance enhancement, the population difference in up and down spin sub-levels and the fundamental absorption loss of the pump light.
The Sun-Mill–a Version of Dunking-Bird as an Energy Convertor of Sun's Radiation
Authors: Ikuta Kazunari , Fujiwaka Setsuya
Published: November 2005

A new type of solar-powered heat engine with the help of gravitation is considered and discussed. The engine consists of an S-shaped vessel in which a working liquid and gas are contained. By the help of a shade and the axis of the vessel the center of gravity of the vessel moves up to the axis when the sun's radiation heats the working gas in the lower side of the vessel. As soon as the center of gravity climbs to the position of the axis the vessel rotates about its axis by the force of gravity. As long as the sun's radiation heats the lower side of the S-shaped vessel the engine continues to rotate. We hereafter call this type of solar-powered heat engine “the sun mill”. We also give experimental results of the engine.
Infrared Multiphoton Dissociation of C2F3Cl
Authors: Nagai Keiichi , Katayama Mikio
Published: November 2005

The mechanism of infrared multiphoton dissociation of C2F3Cl was investigated by observing CO2 laser power dependences of a number of absorbed photon/molecule and reaction rate. A phenomenological model calculation shows that the absorbed energy is localized in two vibrational modes in quasicontinuum state.
Analysis of the Asymmetric 002 X-Ray Line Profiles of γ-Irradiated Polyethylene
Authors: Yoda Osamu , Odajima Akira
Published: November 2005

Asymmetric line profiles of 002 X-ray reflection diffracted from polyethylene have been analyzed. It is found that the asymmetry of the line profile is evidence for a specific correlation between the size and the lattice spacing in the crystallites. This means that the asymmetrical profile consists of two symmetrical profiles whose centroid positions and widths differ from each other. Application to γ-irradiated polyethylene reveals that degradation of crystallites occurs from the surface and that smaller crystallites with larger lattice spacing disappear more quickly when degraded by γ-irradiation.
Hydrogen Bonded OH in Synthetic Quartz
Authors: Iwasaki Fumiko
Published: November 2005

The milky precipitates in synthetic quartz produced by heat treatment were studied by infrared absorption, light scattering tomography, X-ray topography and etching method. The precipitates were formed after heating above 500°C in the regions containing high concentration of hydrogen bonded OH. The contrast corresponding to the local distribution of the milky precipitates were observed in X-ray topographs. The precipitates were found to grow to the large particles when the specimen was heated at higher temperatures. Etch pits correspond to the precipitates were also observed by etching in HF solution.
The results suggest that the precipitates are correlated with aggregated hydrogen bonded OH, which has been occluded since the time of crystal growth.
Observation of Spatial Correlation between Growth Spirals and Inclusions in Stearic Acid Crystals Grown from Solution
Authors: Sato Kiyotaka
Published: November 2005

Optical microscopic observation was made on the {001} surfaces of solution-grown stearic acid crystals to study the spatial correlation between some of the centers of growth spiral steps, which were detected optically, and the terminal ends of the inclusions of mother liquid. An etching experiment showed that the dislocation lines at the growth spiral centers terminated at the terminal ends of the inclusions and it was confirmed that such inclusions changed to hollow tubes by the application of the external stresses. The experiments suggested that a group of screw dislocations would be originated from the terminal ends of special kinds of inclusions formed during growth under relatively high supersaturation. A model taking the overhanging over macrosteps and subsequent slight bending of lateral growth steps moving on the {001} surfaces into consideration is proposed to explain the experimental results.
Electric Field Effect on the Absorption Edge in SbSI
Authors: Ishikawa Kenji
Published: November 2005

The shift of the absorption edge of SbSI due to the application of an electric field was measured as a function of field strength, temperature, and the wavelength of an incident light beam. The results qualitatively agree with Harbeke's results. Based on a phenomenological discussion, we obtain a relation E
g=E
g0+p

P

x+β
x

P
2, where E
g is the band edge energy at which the absorption coefficient is 150 cm-1, x the strain, P is an electric polarization, p

P
a constant, and β
x
the polarization potential for the bound crystal. This relation can explain the field and temperature dependence of the edge shift.
The Neo-Z-Pinch Concept in Magnetic Fusion
Authors: Ikuta Kazunari
Published: November 2005

It is explained that the closed magnetic configuration is generated in the Z-pinch in a conductive casing provided that the axial current is over a critical value. By the formation of the closed configuration in the Z-pinch, the free-streaming end loss is automatically plugged. We call this type of Z-pinch the “neo-Z-pinch”. The electrode problem of the neo-Z-pinch with respect to impurity is also considered.
New Operating Mode for a Three-Grid Modulated B-A Gauge (Mode B Operation)
Authors: Kanaji Toru , Takahashi Makoto , Urano Toshio
Published: November 2005

A three-grid MBAG, which is a special B-A gauge with two additional concentric grids inside the electron collector grid (G1), was investigated. Much effort was made to reduce the modulation factor of the background current (noise current). The potential of the innermost grid (G3) was kept constant in both “on” and “off” states so as to maintain the photo-electron current, one of the main components of noise current, constant. The signal current was modulated by changing the potential of the filament, the 1st grid (G1), the 2nd grid (G2), and an auxiliary electrode behind the filament. The modulation factor of the signal current was unity. The sensitivity of the gauge was 2.1/Torr (=1.6×10-2/Pa).
Infrared and X-Ray Observation of Copper Extraction from Copper Decorated Dislocations in Silicon Crystal
Authors: Kimura Hiroshi , Iizuka Takashi
Published: November 2005

Copper extraction from copper decorated dislocations in silicon crystal is investigated using infrared microscopy and X-ray topography. The extraction is carried out by heat treatment of copper saturated silicon samples in contact with a tin-lead solution at 950°C. The extraction phenomenon is explained by the greater solubility of copper in the tin-lead solution than in silicon at the working temperature. After the extraction, no dislocation images are observed by infrared microscopy, but dislocations with modified contrast are sensitively observed by X-ray topography. After the observations, re-diffusion of copper into the sample is carried out. Infrared observation shows that dislocations at the same position as before are successfully re-decorated with copper.
Effect of Ar Pressure on Sputtered Amorphous GdCo Thin Films
Authors: Togami Yuji , Kobayashi Kikuo , Yanagida Izumi
Published: November 2005

The dependence of the composition of amorphous GdCo thin films prepared by rf sputtering on the Ar gas pressure in the region of 6.0×10-2∼17.0×10-2 Torr was investigated by electron probe microanalyzer and Auger electron spectroscopy. The density of the films was found to decrease with increasing Ar gas pressure. Amorphous films sputtered under low pressure were less susceptible to background contamination than films under high pressure. It was also found that in order to prepare amorphous GdCo thin films reproducibly, it is important to control the background contamination, especially oxygen.
Wavelength Measurement of an H2CO-Stabilized He-Xe Laser at 3.51 µm
Authors: Tako Toshiharu , Ohtsu Motoichi , Katsuragi Seiichi , Ohi Misao , Akimoto Yoshiaki
Published: November 2005

The vacuum wavelength of an H2CO (51,5(ground state)→60,6(v5=1))-stabilized He-Xe laser was measured with respect to the CH4-stabilized He-Ne laser at 3.39 µm by using a pressure-scanning Fabry-Perot interferometer. The average valueλ̄H2COof the vacuum wavelength obtained was 3 507 979.48 pm. The standard deviation σn-1was 0.39 pm with an accuracy of σn-1/λ̄H2CO=1.1×10-7. The estimated values of the systematic errors were -0.24 pm≦ΔλH2CO,1≦0, ΔλH2CO,2=0.004 pm, and ΔλH2CO,3=0.02 pm, respectively, where ΔλH2CO,1, ΔλH2CO,2, and ΔλH2CO,3represent the errors caused by diffraction, nonparallelism between the interferometer mirrors, and nonparallelism between the two laser beams, respectively.
Equilibrium Plasma Position Control for a Large Tokamak Using Modern Control Theory
Authors: Fukunishi Kohyu , Saito Seiji , Ogata Atsushi , Ninomiya Hiromasa
Published: November 2005

Optimal control techniques are applied to maintain the plasma in its equilibrium position in a large tokamak. The application of the state space equation to plasma position control is also discussed. Optimal controls with states, which are plasma current, OH coil current and vertical field current, and integrated plasma displacement feedbacks are formulated as linear, time-invariant expressions with quadratic performance indices. Effective plasma position control was obtained with integral state feedback in computer simulations for the JT-60. These control techniques will be applied to the JT-60.
Growth and Properties of Sputter-Deposited α-HgS Films in Hg Vapor
Authors: Nakada Tokio , Kunioka Akio
Published: November 2005

α-HgS films have been grown by rf-sputtering in Hg vapor. The growth and structure of the films deposited on glass, mica, and cleaved CaF2 (111) substrates are examined by electron diffraction and scanning electron microscopy. The deposition temperature varies from 100 to 150°C, while the deposition rate ranges from 45 to 75 Å/min. Films with a pronounced [0001] fiber texture are grown on all the substrates at 100°C. As the substrate temperature increases to 150°C, epitaxial growth is observed on cleaved CaF2(111) substrates, but not on glass or mica substrates. Optical transmission and photoconductivity data on annealed α-HgS films deposited on glass substrates are presented.
Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers
Authors: Koh Youn-Kyu , Okamoto Hiroaki , Murakami Kouichi , Gamo Kenji , Hamakawa Yohihiro , Namba Susumu
Published: November 2005

The electrical properties of laser-annealed glow-discharge amorphous silicon (GD a-Si) layers have been studied. The principal results obtained are as follows: (1) electrical measurements show that the resistivity of the GD a-Si layer is decreased by four to five orders of magnitude by the laser annealing; (2) Rutherford back-scattering measurements show that the hydrogen content in the GD a-Si layer deposited at room temperature is about 35 atomic percent, and this H2 is not effused from the sample by the laser annealing when the power is near the threshold energy density; (3) reflection electron diffraction measurements show that the GD a-Si layer is transformed into a polycrystalline silicon layer by laser annealing.
Effects of Water on Thermally-Stimulated Currents of Nylon 6
Authors: Ikeda Susumu , Matsuda Kazuo
Published: November 2005

Thermally-stimulated currents of nylon 6 from -180°C to 30°C have been measured by taking the water content of samples as the parameter. The decrease of the γ relaxation peak due to water was not appreciable. However, it was found that the effect of water varied markedly at about -65°C. Water molecules act as a plasticizer in the temperature range above -65°C. The plasticizer effect of water is discussed in terms of the concept of distribution in activation energy.
Color Gamut of a Nematic Liquid Crystal Display
Authors: Shimomura Teruo , Mada Hitoshi , Kobayashi Shunsuke
Published: November 2005

The theoretical color gamut of a nematic liquid crystal display is described. The color gamut of a tunable birefringence mode and a guest host mode are revealed with the CIE chromaticity diagram and color solid. In order to account for the quantitative color gamut, color matching between the given chromaticity coordinates and those calculated is investigated. Color matching is performed by a combination of three liquid crystal subcells (A, B, C), where each subcell receives the voltage V
A, V
B, V
C or contains the dye amount a, b, c. Calculation of the value of voltage or dye amount was executed by the matrix representation method. The calculated data are in good agreement with the given data within 0.50 CIE-UNIT color difference in the 1964 CIE (U
*, V
*, W
*) color scale.
Blue-Emitting S+-Implanted An-ZnS Schottky Barrier Diodes
Authors: Lawther C. , Fujita T. , Takagi T.
Published: November 2005

Au-ZnS electroluminescent cleaved {110} face Schottky barrier diodes with a peak omission in the blue region near 2.67 eV have been reproducibly prepared using 10 keV-energy S+ implantation, followed by nitrogen laser annealing. Preliminary progress is fairly encouraging, with a low drive voltage of about 3.7 volts for 50 mA drive current, and a room-temperature external quantum efficiency of 2×10-6. An operational mechanism of energetic hole injection from the Au electrode has been tentatively established, and is supported by some recent theoretical work.
An Estimate of the Signal-to-Noise Ratio in Nuclear Magnetic Resonance Measurements at Ultra-Low Temperatures
Authors: Fujii Itsuhiro , Ikushima Akira , Yoshida Yoshitaka
Published: November 2005

The signal-to-noise ratios for nuclear magnetic resonance (NMR) measurements by the Continuous Wave (CW) and the Pulsed NMR techniques are compared for applications at ultra-low temperatures. This comparison is made at 0.1, 1 and 10 mK as a function of the energy dissipation. The resonance signal is to be detected by a conventional method using a receiver r-f coil or by using a SQUID detector and the relative merits of the two detection methods are discussed for both the CW and the Pulse techniques.
For the CW NMR, the SQUID detection method is found to have an advantage over the conventional method except at a relatively high applied DC field. For the pulsed NMR, the SQUID detection results in a better signal-to-noise ratio for a relatively high r-f field, (short pulses) while the conventional method becomes more advantageous with a decreasing r-f field.
Crystallization of Amorphous Silicon Layers RF-Sputtered on Sapphire by CW Ion Laser Annealing
Authors: Yamada Masayoshi , Hara Shuichi , Yamamoto Keiichi , Abe Kenji
Published: November 2005

Amorphous silicon layers deposited on sapphire with rf-sputtering have been annealed by scanning irradiation of continuous wave ion lasers. Raman scattering and Nomarski optical spectroscopy measurements have been made to investigate the crystallization of amorphous layers on sapphire. A sharp Raman line corresponding to the optic mode of crystalline silicon has been observed in the laser-annealed SOS, indicating a characteristic feature of recovering long-range order, that is, crystallization. The annealing process is shown to be induced by melting and subsequent crystal growth.
Stability Measurement of the 0.633 µm Line in a CH4-Locked 3.39 µm He-Ne Laser
Authors: Nakazawa Masataka , Musha Toshimitsu
Published: November 2005

Optical heterodyne measurement of frequency stability of the 0.633 µm line in dual stabilization with the 3.39 µm line was carried out. The best stability in terms of Allan variance was 4.14×10-11 for averaging time τ=1 s and the long-term stability was 3.14×10-10 for τ=100 s. Decrease of the long-term stability appears mainly to be attributable to a difference of the temperature coefficients of the Brewster windows at each wavelength.
Ultrasonic Study of K2SeO4 in the Temperature Range of the Incommensurate Phase Transition
Authors: Hoshizaki Hiroki , Sawada Akikatsu , Ishibashi Yoshihiro , Matsuda Takashi , Hatta Ichiro
Published: November 2005

Ultrasonic velocities of K2SeO4 were measured in the temperature range of the incommensurate phase transition. At the transition temperature T
I, c
33 shows a larger jump than c
11 and c
22, and below T
I, c
44 shows a larger variation than c
55 and c
66. The critical index β obtained from the temperature dependence of the increment of c
44 below T
I was found to be 0.34±0.03.
Growth of Low Dislocation Density InP Crystals by the SSD Method
Authors: Tohno Shun-ichi , Yamamoto Akio , Uemura Chikao
Published: November 2005

Sulfur-doped InP single crystals were grown by the synthesis, solute diffusion (SSD) method. The doping concentration was controlled by varying the partial pressure of sulfur in the ampoule. The morphology and dislocation density of the grown crystals were studied. Sulfur of high concentration in the indium melt did not inhibit the single crystal growth of InP. It was found from X-ray topographic studies that the crystals became dislocation-free at the sulfur doping level of 2×1019cm-3.
Field Ion Sources Using Eutectic Alloys
Authors: Gamo Kenji , Ukegawa Takeshi , Namba Susumu
Published: November 2005

Field ion sources using Si-Au and Ge-Au eutectic alloys have been built and their operating characteristics such as the voltage vs. current characteristic, energy and angular distributions have been measured. An angular current density larger than 1.0×10-3 A/sr was obtained both for Si-Au and Ge-Au field ion sources. The width of the energy distribution curves varied with the square root of the ion current which suggests broadening by a space charge effect. The observed results indicate that eutectic alloys can extend the applicability of a field ion source over various elements.
Elastic Constants and Thermal Expansion of Cation Disordered Perovskites
Authors: Uchino Kenji , Nomura Shoichiro , Amin Ahmed , Chang Zung P. , Cross Leslie E. , Newnham Robert E.
Published: November 2005

The elastic constants of the cation disordered perovskites Pb(Mg1/3Nb2/3)O3, Pb(Zn1/3Nb2/3)O3 and (K3/4Bi1/4)(Zn1/6Nb5/6)O3 have been measured by the ultrasonic pulse superposition method, and the thermal expansion of (K3/4Bi1/4)(Zn1/6Nb5/6)O3 has been determined from 300 K to 800 K by X-ray powder diffraction. Both the elastic stiffness and the thermal expansion coefficients of cation disordered perovskites are somewhat smaller than those of simple perovskites. Consistent with previously reported electrostrictive and dielectric properties, the results can be explained by an intuitive ion “rattling” space model.
Atomic Arrangement of the Si(111)-√3×√3-Ag Structure Derived from Low-Energy Ion-Scattering Spectroscopy
Authors: Saitoh Mitsuchika , Shoji Fumiya , Oura Kenjiro , Hanawa Teruo
Published: November 2005

Si(111)-√3×√3-Ag surface structure has been studied by low-energy ion-scattering spectroscopy using neon ions with an energy of 500 eV, combined with LEED-AES. It has been proposed that Ag atoms giving rise to the √3 structure are slightly embedded below the outermost Si layer, including consequent displacements of the substrate Si atoms.
Fabrication and DC Characteristics of Nb Vertical Type Microbridges
Authors: Gamo Kenji , Harada Takeshi , Arimoto Kazutami , Namba Susumu
Published: November 2005

A new type of Nb microbridge has been fabricated and its DC characteristics have been measured. These bridges have a structure which connects two Nb planes separated by a thin SiO2 insulating film through a small pinhole in the SiO2 film. The bridges exhibit non-hysteretic current-voltage relations even at low temperatures and the critical current is observed to vary linearly with a temperature near the critical temperature and sublinearly at lower temperatures. This is an important improvement over other types of superconducting bridges.
Direct Observation of the Intersection of Sequence Faults in the Fe-Cr σ-Phase
Authors: Ishimasa Tsutomu , Kitano Yasuyuki , Komura Yukitomo
Published: November 2005

The intersection of two sequence faults perpendicular to each other was observed by lattice images in transmission electron microscopy. Structural models near the intersections were obtained on the assumption that the atoms are arranged in a similar manner to the regular σ-phase structure even in the faulted region. Two kinds of characteristic arrangements have been confirmed at the intersections. One corresponds to the Zr4Al3 structure and the other, the Cr3Si structure.
Oxygen-Related Donors Generated at 800°C in CZ-Si
Authors: Yasutake Kiyoshi , Umeno Masataka , Kawabe Hideaki , Nakayama Hiroshi , Nishino Taneo , Hamakawa Yoshihiro
Published: November 2005

Two types of CZ-Si crystals annealed at 800°C were studied with infrared absorption (IR), resistivity, photoluminescence (PL) and TEM. The crystal containing much carbon atoms showed rapid reduction of interstitial oxygen content by the annealing, generated extra donors and showed a new spectral band due to them in PL. The observed extra donors were attributed to very small silicon-oxygen complexes in relation to the existence of carbon atoms. The carbon-free crystal showed no characteristic changes in PL spectrum and its resistivity, while appearance of cristobalite precipitates was detected by TEM and IR measurement.
Dielectric Constant of Amorphous PbTiO3
Authors: Takashige Masaaki , Nakamura Terutaro , Tsuya Noboru , Arai Ken Ichi , Ozawa Haruo , Uno Ryosei
Published: November 2005

Investigations have been made on the temperature dependence of dielectric constant in rapidly quenched amorphous samples of PbTiO3. In the first heating process, discontinuous change in dielectric constant has been observed when the sample crystallizes. Near the crystallization temperature it shows remarkable low frequency dispersion. By annealing samples above the crystallization temperature, the change in dielectric constant caused by the structural realxation toward the perfect crystalline state have been observed.