bluuebunny/crossref_metadata_2025 huggingface dataset:
Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs
Authors: Zhou Xiang , Hitchcock Collin W. , Tang Poonman , Bhat I. , Chow T. Paul
Published: July 2020

We have characterized gate capacitive and conductive behaviors of commercial Si and 4H-SiC vertical MOSFETs that have never been reported previously. The characteristics and possible physical reasons are determined and corroborated with device simulations. The measurements were carried out on different 1200V 4H-SiC MOSFETs from several vendors by impedance analyzer. Typical C-V characteristics of gate-controlled diodes are observed in those MOSFETs, while several conductance peaks are also captured in G-V measurements. These conductance peaks, reproduced with numerical simulations, are not necessarily related to the behavior of any interface states at the gate oxide/ 4H-SiC interface.
Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level Transient Spectroscopy and Device Simulation
Authors: Yamasue Kohei , Yamagishi Yuji , Cho Yasuo
Published: July 2020

It has recently been shown that interface defect density (Dit) at SiO2/SiC interfaces can have non-uniform clustered distribution through the measurement by local deep level transient spectroscopy (local DLTS). Here we investigate the influence of the non-uniform Dit clustering on the field-effect mobility in SiC metal-oxide-semiconductor field effect transistors (MOSFETs) by device simulation. We develop a three dimensional numerical model of a SiC MOSFET, which can incorporate actual Dit distributions measured by local DLTS. Our main result is that the impact of the non-uniform Dit clustering on field-effect mobility is negligible for a SiC MOSFET with high Dit formed by dry thermal oxidation but it becomes significant for that with lower Dit by post-oxidation annealing. The result indicates that channel mobility can be further improved by making Dit distribution uniform as well as reducing Dit.
Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs
Authors: Berens Judith , Pobegen Gregor , Grasser Tibor
Published: July 2020

The interface between the gate oxide and silicon carbide (SiC) has a strong influence on the performance and reliability of SiC MOSFETs and thus, requires special attention. In order to reduce charge trapping at the interface, post oxidation anneals (POAs) are conventionally applied. However, these anneals do not only influence the device performance, such as mobility and on-resistance, but also the gate oxide reliability. We study the oxide tunneling mechanisms of NH3 annealed 4H-SiC trench MOSFET test structures and compare them to devices which received a NO POA. We show that 3 different mechanisms, namely trap assisted tunneling (TAT), Fowler-Nordheim (FN) tunneling and charge trapping are found for NH3 annealed MOS structures whereas only FN-tunneling is observed in NO annealed devices.The tunneling barrier suggest a trap level with an effective activation energy of 382 meV to enable TAT.
TDDB Lifetime Enhancement in SiC-MOSFETs under Gate-Switching Pperation
Authors: Murakami Eiichi , Takeshita Tatsuya , Oda Kazuhiro
Published: July 2020

Gate oxide integrity (GOI) are the most important concern in automotive applications of SiC-metal-oxide-semiconductor field-effect transistors (MOSFETs). As well as for the so-called B-mode defect density reduction, the time-dependent dielectric breakdown (TDDB) mechanism including the B-mode should be clarified in comparison to Si-MOSFETs. We have reported an anomalous behavior in the form of a continuous increase in the gate current during a Fowler-Nordheim stress test of commercially available SiC-MOSFETs, which we attributed to hole trapping near the SiO2/SiC interface. In this paper, the impact of this phenomenon on the TDDB lifetime is investigated, and the effects of AC on the TDDB lifetime enhancement in SiC-MOSFET under gate-switching operations (1 kHz and 100 kHz, at room temperature) are reported.
Modeling of Threshold Voltage Hysteresis in SiC MOSFET Device
Authors: Cascino Salvatore , Saggio Mario , Guarnera Alfio
Published: July 2020

In this paper, we report on the simulation results of instability threshold voltage of SiC MOSFET device. Hysteresis cycles of threshold voltage suggest that trapping and detrapping phenomena of electrons from the SiC layer into the oxide traps occur. Experiment suggests that positive threshold voltage shifts (ΔVth) caused by a positive stress voltage to the gate, are almost fully recovered by applying negative stress voltage. This work assumes uniform trap densities extending from SiC interface at a limited depth into oxide.
Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiC
Authors: Linnarsson Margareta K. , Hallén Anders , Vines Lasse
Published: July 2020

Channeling phenomena during ion implantation have been studied for 50 keV 11B, 100 keV 27Al and 240 keV 71Ga in 4H-SiC by secondary ion mass spectrometry and medium energy ion backscattering. The same projected range are expected for the used energies while the channeling tails are shown to be substantially different, for example, channeled 71Ga ions may travel 5 times as deep as 11B. Ion implantation has been performed both at room temperature (RT) and 400 °C, where channeling effects are reduced for the 400 °C implantation compared to that of the RT due to thermal vibrations of lattice atoms. The temperature effect is pronounced for 71Ga but nearly negligible for 11B at the used energies. The channeling phenomena are explained by three-dimensional Monte Carlo simulations. For standard implantations, i.e. 4° off the c-direction, it is found that a direction in-between the [000-1] and the <11-2-3> crystal channels, results in deep channeling tails where the implanted ions follow the [000-1] and the <11-2-3> directions.
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time
Authors: Nipoti Roberta , Parisini Antonella , Boldrini Virginia , Vantaggio Salvatore , Gorni Marco , Canino Maria , Pizzochero Giulio , Camarda Massimo , Woerle Judith , Grossner Ulrike
Published: July 2020

Van der Pauw devices have been fabricated by double ion implantation processes, namely P+ and Al+ co-implantation. Similarly to the source area in a SiC VD-MOSFET, a 5 × 1018 cm-3 P plateau is formed on the top of a buried 3 × 1018 cm-3 Al distribution for electrical isolation from the n- epilayer. The post implantation annealing temperature was 1600 °C. Annealing times equal to 30 min and 300 min have been compared. The increase of the annealing time produces both an increase of electron density as well as electron mobility. For comparison a HPSI 4H-SiC wafer, 1×1020 cm-3 P+ ion implanted and 1700 °C annealed for 30 min was also characterized.
4H-SiC MOSFET Source and Body Laser Annealing Process
Authors: Calabretta Cristiano , Agati Marta , Zimbone Massimo , Boninelli Simona , Castiello Andrea , Pecora Alessandro , Fortunato Guglielmo , Calcagno Lucia , Torrisi Lorenzo , La Via Francesco
Published: July 2020

This work describes the development of a new post-implant crystal recovery technique in 4H-SiC using XeCl (l=308 nm) multiple laser pulses in the ns regime. Characterization was carried out through micro-Raman spectroscopy, Photoluminescence (PL), Transmission Electron Microscopy (TEM) and outcomes were than compared with 1h thermally annealed at 1650-1770-1750 °C P implanted samples (source implant) and P and Al implanted samples for 30 minutes at 1650 °C (source and body implants). Experimental results demonstrate that laser annealing enables crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Unlike the results obtained with thermal annealing where stress up to 172 Mpa and high carbon vacancies (Vc) concentration is recorded, laser annealing provides almost stress free samples and much less defective crystal avoiding intra-bandgap carrier recombination. Implant was almost preserved except for step-bouncing and surface oxidation phenomena leading to surface roughening. However, the results of this work gives way to laser annealing process practicability for lattice damage recovery and dopant activation.
Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications
Authors: Itoh Hironori , Enokizono Taro , Miyase Takaya , Hori Tsutomu , Wada Keiji , Doi Hideyuki , Furumai Masaki
Published: July 2020

Epitaxial growth of 4H-SiC on 150 mm wafers with the recombination-enhancing buffer layer was studied. In order to accomplish the reduction of basal plane dislocations in the buffer layer to almost free level and assure its quality in production, non-destructive evaluation using photoluminescence method was investigated. Epitaxial wafers of which the buffer layer and the drift layer have more than 99% BPD free area in a 2.6 mm × 2.6 mm block evaluation were realized by optimizing the epitaxial growth conditions. Furthermore, very low surface defects density and excellent thickness and doping uniformity were achieved simultaneously.
Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC
Authors: Hellinger Carsten , Rusch Oleg , Rommel Mathias , Bauer Anton J. , Erlbacher Tobias
Published: July 2020

In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4 laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes.
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology
Authors: Roccaforte Fabrizio , Spera Monia , Di Franco Salvatore , Lo Nigro Raffaella , Fiorenza Patrick , Giannazzo Filippo , Iucolano Ferdinando , Greco Giuseppe
Published: July 2020

Gallium nitride (GaN) and its AlGaN/GaN heterostructures grown on large area Si substrates are promising systems to fabricate power devices inside the existing Si CMOS lines. For this purpose, however, Au-free metallizations are required to avoid cross contaminations. In this paper, the mechanisms of current transport in Au-free metallization on AlGaN/GaN heterostructures are studied, with a focus on non-recessed Ti/Al/Ti Ohmic contacts. In particular, an Ohmic behavior of Ti/Al/Ti stacks was observed after an annealing at moderate temperature (600°C). The values of the specific contact resistance ρc decreased from 1.6×104 Ω.cm2 to 7×105 Ω.cm2 with increasing the annealing time from 60 to 180s. The temperature dependence of ρc indicated that the current flow is ruled by a thermionic field emission (TFE) mechanism, with barrier height values of 0.58 eV and 0.52 eV, respectively. Finally, preliminary results on the forward and reverse bias characterization of Au-free tungsten carbide (WC) Schottky contacts are presented. This contact exhibited a barrier height value of 0.82 eV.
1200 V / 200 A V-Groove Trench MOSFET Optimized for Low Power Loss and High Reliability
Authors: Uchida Kosuke , Hiyoshi Toru , Saito Yu , Egusa Hiroshi , Kaneda Tatsushi , Oomori Hirotaka , Tsuno Takashi
Published: July 2020

1200 V / 200 A V-groove trench MOSFET optimized to achieve low power loss, high oxide reliability under a drain bias condition and high avalanche ruggedness is shown in this paper. We revealed a relationship between the lifetime under a high temperature reverse bias condition and the oxide electric field. In accordance with the results of the test, the 1200 V / 200 A trench MOSFET showed an improvement in the tradeoff between the on-resistance and oxide electric field with the presence of current spreading layers. In order to obtain low on-resistance and high avalanche ruggedness at the same time, buried guard ring structures, which made the blocking voltage of the edge termination area higher than that of the active area, was developed. The fabricated MOSFETs demonstrated a low specific on-resistance of 3.1 mΩ cm2. A predicted lifetime of 200 years under a high temperature drain bias condition of 1200 V was achieved by the optimized design. A short circuit withstand time of 6 μs and a high avalanche energy of 7.8 J/cm2 were shown.
Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs
Authors: Agarwal Aditi , Kanale Ajit , Han Ki Jeong , Baliga B. Jayant , Bhattacharya Subhashish
Published: July 2020

This paper compares the static and dynamic performance of 1.2 kV 4H-SiC ACCUFETs and INVFETs with identical channel length (0.5 μm) and gate oxide thickness (55 nm). It is demonstrated for the first time that ACCUFETs have lower total switching losses in comparison to the INVFETs. ACCUFETs are therefore superior devices for applications due to their lower specific on-resistance and overall switching losses. However, short circuit tests conducted on the devices show that ACCUFETs have a smaller short-circuit time (tSC) in comparison the INVFETs due to their higher short-circuit current.
Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS
Authors: Okada Masakazu , Kumazawa Teruaki , Kobayashi Yusuke , Baba Masakazu , Harada Shinsuke
Published: July 2020

A 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench metal oxide semiconductor field effect transistor (MOSFET) (SWITCH-MOS) exhibits potential for solving body-PiN-diode-related problems such as bipolar forward degradation and switching losses among relatively low breakdown voltage 1.2 kV-class SiC MOSFETs. In this study, dynamic characteristics and switching losses of the SWITCH-MOS and conventional MOSFET are compared. The results demonstrate that the SWITCH-MOS exhibits smaller turn-on and reverse recovery losses than a conventional MOSFET at high temperatures. Ruggedness performances such as short circuit and unclamped inductive switching capabilities were evaluated.
Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors
Authors: Schlichting Holger , Kocher Matthias , Weisse Julietta , Erlbacher Tobias , Bauer Anton J.
Published: July 2020

The compensation of charge carriers is an important aspect to be considered in Aluminum doped areas in 4H-SiC. In this paper, a straightforward method has been found to implement compensation effects into a basic device simulation model and to improve the conformance of electrical measurement and simulation results. By implementing the compensation factors, which depend on Aluminum doping concentration, device simulation in combination with basic device cell structure can be used to create electrical characteristics that are in accordance with measured characteristics. This is a simple alternative for complex process simulation, taking into account physical effects like defects in the crystal structure. The method was used for simulation of lateral MOSFETS transfer characteristic as well as VDMOS blocking characteristic. Found compensation values were 80 % in the 1.5 ∙ 1017 cm-3 Al-doped channel region and 23% in the deep, 7.5 ∙ 1017 cm-3 Al-doped, shielding region.
Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs
Authors: Bellini Marco , Knoll Lars
Published: July 2020

This paper introduces novel TCAD post-processing techniques for SiC MOSFETs with the aim of understanding which parts of the device limit the on-state performance. Typically, analytical models of MOSFETs are used as a starting point for the TCAD design process or as a simple way to understand the influence of complex design choices, as discussed in the works of [1-3]. These lumped element models result in a relatively straightforward approach because they explicitly identify the contributions of the regions of the transistor, facilitating the understanding of basic design choices and performance trade-offs. However, the simplifications introduced in analytical models limit their applicability to advanced device structures such as aggressively scaled transistors or trench MOSFETs with cellular layout. This paper presents mathematical techniques based on post-processing of TCAD simulations that combine the accuracy of numerical Finite Element studies with the interpretability of lumped element analytical models.
Common-Drain Bidirectional 1200V SiC MOSFETs
Authors: Hitchcock Collin W. , Chow T. Paul
Published: July 2020

Using commercially available SiC MOSFET dice, bidirectional MOSFETs were assembled and their electrical performance was tested. With proper gate biasing, the pair is capable of blocking at or near the rated value of the component MOSFETs in each direction. The pair conducts in both directions with an on-state resistance comparable to the sum of the constituent device resistances. With optimization of the component devices, this configuration promises to improve bidirectional switch performance beyond that of the simple assembled pair.
Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model
Authors: Johannesson Daniel , Jacobs Keijo , Norrga Staffan , Hallén Anders , Nawaz Muhammad , Nee Hans Peter
Published: July 2020

In this paper, a technology computer-aided design (TCAD) model of a silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) has been calibrated against previously reported experimental data. The calibrated TCAD model has been used to predict the static performance of theoretical SiC IGBTs with ultra-high blocking voltage capabilities in the range of 20-50 kV. The simulation results of transfer characteristics, IC-VGE, forward characteristics, IC-VCE, and blocking voltage characteristics are studied. The threshold voltage is approximately 5 V, and the forward voltage drop is ranging from VF = 4.2-10.0 V at IC = 20 A, using a charge carrier lifetime of τA = 20 μs. Furthermore, the forward voltage drop impact for different process dependent parameters (i.e., carrier lifetimes, mobility/scattering and trap related defects) and junction temperature are investigated in a parametric sensitivity analysis. The wide-range simulation results may be used as an input to facilitate high power converter design and evaluation. In this case, the TCAD simulated static characteristics of SiC IGBTs is compared to silicon (Si) IGBTs in a modular multilevel converter in a general high-power application. The results indicate several benefits and lower conduction energy losses using ultra-high voltage SiC IGBTs compared to Si IGBTs.
Transient Performance of >10kV SiC IGBT with an Optimized Retrograde p-Well
Authors: Tiwari Amit , Antoniou Marina , Trajkovic Tatjana , Dai Tian Xiang , Gammon Peter Michael , Udrea Florin
Published: July 2020

The impact of different p-well designs upon the transient performance, in particular, the turn-off losses and short-circuit capability, of a >10 kV SiC n-IGBT is assessed. We find that in addition to improved transient performance, a substantial reduction in the depth of p-well implants can be achieved, if an extensively optimized retrograde approach is utilized. A conventional p-well consisting of a uniformly doped deep implant (doping concentration of ~3×1017 cm-3 and depth of >1.5 µm) exhibits considerable turn-off switching losses without offering any short circuit capability. However, an optimized retrograde p-well consisting of a variable doping profile and depth as shallow as 0.7-0.8 µm results in much reduced turn-off losses with excellent short-circuit capability. Shallow implants are desirable to lower the development cost and processing challenges. The retrograde p-well is therefore highly promising for the development of >10 kV class of SiC IGBTs.
Short Circuit Ruggedness of 600 V SiC Trench JFETs
Authors: Sundaramoorthy Vinoth , Kranz Lukas , Wirths Stephan , Bellini Marco , Romano Gianpaolo , Arango Yulieth , Bianda Enea , Knoll Lars , Mihaila Andrei
Published: July 2020

Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2 μm cell pitch had an on-resistance value around 40 mΩ and blocking voltages of ~600 V across the wafer. JFETs were successfully switched with a dc link voltage of 300 V, a current of 15 A and operating temperature of 125 °C. These JFETs were subjected to a short circuit condition with duration ranging from 10 μs to 45 μs at a dc link voltage of ~300 V, and operating temperatures of 25 °C and 125 °C. The device could withstand subsequent short circuit successfully without any failure at both 25 °C and 125 °C. The short circuit current showed consistent dependency on the applied gate voltage, when it was varied from 0 V to 15 V.
Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-Diodes
Authors: Lechner Benedikt , Huang Yaren , Schaub Stefan , Wachutka Gerhard
Published: July 2020

The activation of bipolar conduction was investigated for two 4H-SiC 10 kV JBS-diodes which differ in the area ratio between p-doped and n-doped regions (Ws/WPin). Quasi-static measurements at low electric current densities (j < 2.5 Acm-2) were performed in a temperature range between 25°C and 500°C. The lower ratio (Ws/WPin) leads to a higher threshold voltage. On the other hand lower electric power density is neccessary to trigger temperature enhanced bipolar activation. Moreover, the lower ratio improves the leakage currents in blocking direction. Dynamic surge current investigations were performed in a temperature range between 25°C and 250°C. The turning voltages, which indicate the transition from unipolar to bipolar conduction, are lower for the diode with smaller ratio (Ws/WPin) but the self-heating of the device is more severe in comparison to the other diode with the larger ratio. Both devices are stable under extreme conditions (high temperatures/ surge current) and exhibit special benefits for different applications.
Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices
Authors: Hoffmann Felix , Kaminski Nando
Published: July 2020

In this work, the three most common lifetime models for power semiconductors i.e. LESIT, CIPS08 and SKiM63 are investigated regarding their applicability for SiC power devices. For this reason, multiple power cycling tests with a large number of devices were performed. The results show that those models can properly reflect the power cycling test results of SiC power semiconductors for higher temperature swings if the model parameter are properly adjusted. However, they show a significant error for lower temperature swings and drastically underestimate the lifetime. This indicates that the inferior power cycling performance of SiC power devices compared to silicon at high temperature swings does not necessarily imply that the service life is affected in the same order of magnitude.
Comparison of electromyographic activity during Nordic hamstring exercise and exercises in lengthened position
Authors: Marušič Jan , Šarabon Nejc
Published: July 2020

Hamstring strain injuries remain among the most problematic and most frequent sport injuries. Two of the most effective methods for prevention and rehabilitation of the hamstring strain injuries are: classic eccentric training using the Nordic hamstring exercise (NHE) and eccentric training in a lengthened position using the glider exercise. Both exercises have disadvantages that could be fixed by adding hip flexion during the NHE. Thus, the purpose of the study was to compare peak hamstring activity (measured by electromyography) between three eccentric exercises: the standard NHE, the modified NHE and the glider. Differences were statistically tested with the analysis of the variance for repeated measurements and the paired 2-tailed post-hoc t-test. Hamstring activity during the modified NHE was significantly lower compared to the NHE and significantly higher compared to the glider. The results indicate that implementing the modified NHE could increase the effectiveness of already established rehabilitation protocols and help reduce the risk of hamstring (re-)injury.
Il Miele Medicale nella pratica clinica: la nostra esperienza in 75 casi trattati
Authors: Pierangeli Marina , Ruocco Giovanni , Recchi Vanya , Cecconato Valentina , Binci Costanza , Zavalloni Yasmine , Talevi Davide , Torresetti Matteo , Di Benedetto Giovanni , Scalise Alessandro
Published: July 2020

Presso la Struttura Organizzativa Dipartimentale (S.O.D.) Clinica di Chirurgia Plastica e Ricostruttiva di Ancona sono stati trattati con miele medicale consecutivamente, nell’arco di 24 mesi, 75 pazienti affetti da lesioni cutanee croniche. Nell’articolo vengono descritti gli ottimi risultati ottenuti in termini di riduzione dei tempi di guarigione delle lesioni trattate, e vengono descritte le caratteristiche chimiche e fisiche del miele medicale che ne spiegano in forma scientifica l’azione.
Impact of Covid-19 Lockdown on Sleep-Wake Schedule and Associated Lifestyle Related Behavior: A National Survey
Authors: Sinha Meenakshi , Pande Babita , Sinha Ramanjan
Published: July 2020

Background

Lockdowns to prevent the community transmission of COVID-19 pandemic has confined the people at home and imposed social restrictions, which is expected to cause alterations in circadian driven sleep-wake schedule and its associated lifestyle behaviors.

Design and methods

An online questionnaire-based survey was conducted to assess the impact of lockdown on the sleepwake pattern, meal timings and digital media exposure time on the Indian population during lockdown. Responses of 1511 participants (age ≥18 years) were analyzed to assess the effect of gender and age on these parameters before and during lockdown.

Results

The sleep onset-wakeup times and meals’ time was significantly delayed during lockdown, which was more pronounced in younger subjects. However, young individuals reported increased sleep duration at this time. Increased digital media duration was evident in all age groups, mainly in males. However, females reported more delay in sleep onset-waking time and first meal timing with longer sleep duration during lockdown.

Conclusions

Discord with social and natural cues due to complete lockdown during COVID-19 pandemic leads to a state of social jetlag with delayed sleep-wake, meal timings and excessive digital media exposure among Indians, which has differential impact on males and females as well as across different age groups. These findings have applied implications in sleep health and related behavior during longer social isolation conditions such as current COVID-19 or similar situations and may help to prepare better for any such future events.
“Living on the world”: rethinking justice by reconsidering vulnerability and autonomy
Authors: Danani Carla
Published: July 2020

In this article, I propose a unitary vision that links vulnerability and autonomy together. The aim is to rethink a number of crucial issues related to justice. Firstly, I undertake an in-depth consideration of human vulnerability. By human beings, I understand instances of “embodied consciousness”, who inhabit the placedness of the world not simply by living in it but also by living on it. Openness, exposure and exchange are ontological features through which human beings both receive and cause harm and injuries, but also receive and cause enjoyment and fulfillment. Secondly, I point out that the condition of human interdependency does not require us to give up the demand to pursue “autonomy”. On the contrary, autonomy needs to be rethought, by presenting it as something that is constitutively relational. Finally, I argue for the centrality of issues concerning justice, for human beings develop by constantly establishing relations with human and non-human alterities. The model of subordination, though, should be avoided. My aim is to go beyond the sterile opposition between context perspectives emphasized by care ethics and universalistic approaches endorsed by the ethics of rights. The goals are to build a world where everyone can live one’s ontological inter-dependency without paternalism or subordination, can be protected from avoidable vulnerabilities and have the opportunity to develop and to perform one’s autonomy. This raises issues about the distribution of goods in the social-economic sphere, but also on the management of social infrastructures and the recognitional practices in societies: which are all always placed.
La phrônésis ricoeuriana: una rilettura di futilità e proporzionalità nei casi di fine vita
Authors: Roggi Sara , Picozzi Mario
Published: July 2020

La dilemmaticità dell’esperienza della malattia, le implicazioni etiche e morali determinate dal progresso della bioingegneria medica e la complessità dei percorsi di cura hanno determinato il progressivo incremento di conflitti di natura morale all’interno delle strutture ospedaliere, dei centri di cura e degli hospice. Tali cambiamenti hanno pertanto condotto filosofi, bioeticisti e teologi morali ad interrogarsi circa la modalità con cui l’etica, diventando parte integrante della prassi clinica, può trovare un’applicabilità nella gestione, decostruzione e risoluzione dei conflitti morali nascenti all’interno del settore sanitario. Paul Ricoeur ha individuato nella phrônésis aristotelica l’approccio d’indagine imprescindibile per l’analisi contestuale del reale: quello prudenziale. Pertanto, nella sua petite éthique, la “saggezza pratica” – la prudence, così tradotta dalla nozione latina di “prudentia” – rappresenta il punto di partenza dell’espressione del giudizio medico, nonché dell’applicabilità della norma morale nella particolarità del reale. Il presente lavoro è stato concepito nell’obiettivo di indagare il ruolo pragmatico della nozione ricoeuriana di phrônésis in quella sfera “regionale”, così come presentata dall’autore, che è l’etica medica. L’analisi circa l’apporto della “prudenza” nelle dinamiche conflittuali del settore sanitario risulterà inoltre fondamentale nel rilevare l’interconnessione tra la nozione di phrônésis e i due concetti cardine del fine vita, ovverosia, la futilità e la proporzionalità.
Are anti-PD1 and anti-PD-L1 alike? The non-small-cell lung cancer paradigm
Authors: Banna Giuseppe Luigi , Cantale Ornella , Bersanelli Melissa , Del Re Marzia , Friedlaender Alex , Cortellini Alessio , Addeo Alfredo
Published: July 2020

Anti-PD1 and anti-PD-L1 agents may have intrinsic and clinically relevant differences in the treatment of non-small cell lung cancer (NSCLC) patients. By reviewing currently available indirect evidence on these agents for NSCLC treatment, highlighting possible inter- and intra-class dissimilarities, anti-PD1 agents showed a higher response rate and a better outcome when combined with chemotherapy for the first-line treatment of patients with squamous and PD-L1 low advanced NSCLC, as compared to anti-PD-L1 agents. Conversely, anti-PD-L1 agents were responsible for less severe adverse events (AEs), particularly, immunerelated AEs. These differences could be explained by their different specific properties. Considering possible differences between anti-PD1 and anti-PD-L1 agents could be clinically relevant for treatment tailoring and inspiring new investigational approaches.
Clinical practice guidelines for patients with polymyalgia rheumatica: the need for an active involvement of all stakeholder is still unmet
Authors: Manzo C.
Published: July 2020

Not available
Literacidad en El Salon de Clases
Authors: Rodea Marisela Colín
Published: July 2020

La presente investigación tuvo por objetivo desarrollar actividades de producción escrita como parte del currículo de una disciplina de posgrado. El estudio se sitúa en el marco de la investigación en lingüística aplicada (LA) y se centra en la propuesta de producción escrita de la Queer Literacy desarrollada por Miller (2015). En este trabajo se propuso a las sexualidades no como esencia y sí como performance, en negociación y en cuestionamiento; se buscó reescribir el sujeto social en la LA como heterogéneo y mutable, tal como plantea Moita Lopes (2008), como aquel sujeto que vive en los márgenes de la identidad homogénea modernista, en constante performance de identidades frecuentemente reconocidas como subalternas o marginalizadas, según Amorim (2010). A partir del paisaje lingüístico de una campaña sobre género como actividad previa y de la resolución de la tarea “sair do armario/salir del closet” cuyo tema fue la construcción de significados en torno a la performatividad de dos profesores en un salón multicultural de clases de inglés presentada originalmente por Nelson (2004), retomamos los discursos generados sobre esas identidades para indagar en un grupo de 13 alumnos universitarios mexicanos su opinión por escrito sobre los mismos eventos relatados. El análisis de las producciones escritas se llevó a cabo a partir de la propuesta discursiva de Castaños (2014), operacionalizada por Jiménez (2019), la cual propone un análisis cualitativo y cuantitativo de los actos de habla.
Como Fazer Corpos com Palavras?
Authors: Do Bonfim Marco Antonio Lima , De Alencar Claudiana Nogueira , Mendes José Ernandi
Published: July 2020

O presente artigo teve como objetivo discutir a relação entre linguagem e corpo nos estudos da linguagem, refletindo sobre as implicações teóricas desta relação para os estudos relacionados à produção de identidades de gênero. Para tanto, refletimos principalmente, sobre a teoria dos atos de fala (AUSTIN, 1990), nos trabalhos de Butler (1997, 1999, 2000, 2012) e Pinto (2002, 2007, 2009) a respeito da estilização de gênero em linguagem, bem como no estudo de Silva (2005) sobre a construção performativa de identidades de gênero. Desta forma, pretendemos demonstrar que os estudos linguísticos que lidam com o tema da(s) identidade(s) devem considerar a relação inevitável entre corpo, linguagem e poder, sob pena de ficarem reféns de uma abordagem reducionista do uso linguístico.
Introdução à Formação de Audiodescritores
Authors: Aderaldo Marisa Ferreira , Franco Renatta Pires , De Oliveira Georgia Tath Lima
Published: July 2020

A audiodescrição (AD) é um recurso de acessibilidade que, por meio da tradução do texto visual para texto verbal, amplia o entendimento das pessoas com deficiência visual (PcDVs). Apresenta-se atualmente como importante recurso no processo de inclusão dessas pessoas nos espaços da sociedade, desde o lazer e cultura à educação e ao âmbito laboral. O objetivo deste estudo, então, é relatar experiência em análise de imagens presentes em questões do Enem/2015 e suas respectivas audiodescrições, em um minicurso intitulado “Introdução à Audiodescrição”, realizado no escopo do Laboratório de Tradução Audiovisual (LATAV) da Universidade Estadual do Ceará (UECE), no ano de 2016. Os participantes desse minicurso, que visou a formação em nível introdutório de audiodescritores, foram alunos do curso de graduação em Letras e de Pós-Graduação do Programa em Linguística Aplicada (PosLA), ambos da UECE, além de outros interessados normovisuais e de dois alunos PcDVs. O trabalho se fundamentou em estudos da área da Tradução Audiovisual Acessível, em especial no trabalho de Aderaldo (2014) e insights de Motta (2016), com a finalidade de analisar as imagens e elaborar roteiros de audiodescrição. Os resultados obtidos mostraram a importância em promover o letramento visual de audiodescritores roteiristas e consultores, com a finalidade de demarcar a audiodescrição como uma das ferramentas assistivas necessárias ao empoderamento das pessoas com deficiência visual em nossa sociedade.
Datos del Archivo Arzobispal de Sevilla sobre los religiosos secularizados en dicho Arzobispado a raíz de la desamortización de Mendizábal
Authors: Sánchez Pérez, OSA Emiliano
Published: July 2020

Este trabajo pretende proporcionar datos contables, exactos o aproximados, de los religiosos exclaustrados, residentes en los conventos masculinos de Sevilla. Es un valioso soporte documental para fijar claramente la Orden o Congregación religiosa a la que pertenecían, si continuaron después como sacerdotes seculares, si todos recibieron suficiente ayuda económica del gobierno, etc., También nos guió la convicción, de que, cuando hay errores de interpretación histórica, la mejor forma de corregirla, es el recurso a las fuentes primarias. Además, la transcripción es un medio eficaz contra el peligro de desaparición o grave deterioro de las fuentes primarias.
Relação entre o conceito de natureza e sequestro de carbono - aplicações em área de semiárido
Authors: França Luciana Mayla De Aquino , Costa Valéria Sandra De Oliveira , Galvíncio Josiclêda Domiciano
Published: July 2020

A natureza vem sendo tratada de diversas formas ao longo do tempo, bem como vem obtendo conceitos cada vez mais divergentes em estudos de ciências humanas e ambientais. Correlacionar conceitos de natureza com temas atuais das ciências ambientais se faz importante como forma de compreender, de forma mais ampla, as interligações entre os fatores físicos do ambiente. Dessa forma, o objetivo do estudo é analisar e discutir alguns conceitos de natureza, considerando suas relações com conceitos e discussões sobre o sequestro de carbono em condições de semiárido. Os resultados apontam que os dois tópicos possuem interesses em comum.
Princípios cooperativistas na percepção dos associados: estudo de caso em uma cooperativa de crédito de Minas Gerais
Authors: Ribeiro Jaciara Xavier Pereira , Melo Alfredo Alves de Oliveira
Published: July 2020

O Cooperativismo é um modelo de organização que tem como objetivo principal o desenvolvimento econômico e social, tendo em seus princípios as linhas orientadoras através dos quais as cooperativas levam os seus valores à prática. Os sete princípios cooperativos são: adesão voluntária e livre; gestão democrática pelos membros; participação econômica dos membros; autonomia e independência: educação, formação e informação; intercooperação e interesse pela comunidade. O objetivo geral é avaliar o grau de aderência dos associados de uma cooperativa de crédito de livre admissão de Minas Gerais no que diz respeito aos princípios cooperativistas. A pergunta que orientou o trabalho: qual o grau de aderência dos associados com relação aos princípios cooperativistas? Este trabalho foi realizado através da abordagem quantitativa descritiva por meio de um survey. A população total foi de 11.789 associados e amostra de 373 associados. O nível de significância foi de 5%, e confiabilidade de 95%. Os sujeitos da pesquisa foram os associados. A técnica de coleta de dados foi o questionário, utilizando a escala de avaliação likert. Para a análise dos dados foram usados os softwares estatísticos Minitab 15 e SPSS 16, além do Microsoft Excel, nos quais foram realizadas análises de ordem univariada e bivariada através do estudo das médias. Os objetivos estabelecidos foram atingidos, sendo respondida a questão problema do estudo. Diante dos resultados apresentados, conclui-se que os associados da cooperativa pesquisada apresentaram elevado grau de aderência no que diz respeito aos princípios cooperativistas.
As competências da psicopedagogia nos processos de ensino- aprendizagem
Authors: Ribeiro Jaciara Xavier Pereira
Published: July 2020

A Psicopedagogia é um campo de estudo recentes, principalmente no Brasil tendo como desafio a construção da identidade do Psicopedagogo seu campo de atuação, vivenciados no cotidiano do processo de ensino- aprendizagem. Sendo assim, para a definição do problema de pesquisa levou-se em consideração a expectativa de investigar a importância da Psicopedagogia nos processos de Ensino-Aprendizagem. Tendo como objetivo geral: Apresentar conceitos importantes na área da Psicopedagogia nos processos de Ensino-aprendizagem e os objetivos específicos são: descrever conceitos sobre a Psicopedagogia; apresentar o profissional Psicopedagogo e por fim descrever a Psicopedagogia como uma junção da Pedagogia, Psicologia e outras ciências. Os objetivos foram alcançados, respondendo à questão problema. Como limitação do artigo, a metodologia utilizada para pesquisa foi feita apenas revisão documental e bibliográfica, neste sentido, sugere-se a realização de novas pesquisas, desta vez de forma quantitativa ou qualitativa em ambientes escolares e também em Instituições financeiras, a exemplo das Cooperativas de Crédito, avaliando a importância da Psicopedagogia nos processos de seleção, recrutamento e integração do contratado e na gestão do conhecimento dos profissionais, na busca pelo eficiência e eficácia da organização no mercado de atuação.
Gestão de RH e processos de recrutamento & seleção e integração nas cooperativas de crédito através da metodologia DISC durante pandemia Coronavírus
Authors: Ribeiro Jaciara Xavier Pereira
Published: July 2020

A Gestão de Recursos Humanos e dos Processos de Recrutamento & Seleção e integração das Pessoas nas Cooperativas de Crédito SICOOB, através da metodologia DISC durante pandemias, a exemplo do coronavirus, também conhecido como Covid-19, sendo um campo de estudo muito importante pois está relacionado ao fator humano, muito importante para promover o sucesso da cooperativa de crédito. Sendo assim, para a definição do problema de pesquisa levou em consideração a expectativa de investigar a importância do Gestor em se capacitar para a realização de uma Gestão eficiente e eficaz do Setor de Recursos Humanos e dos Processos de Recrutamento & Seleção e integração das Pessoas nas Cooperativas de Crédito SICOOB, com a utilização da metodologia DISC para promover o triunfo das instituições financeiras cooperativas de crédito. Tendo como objetivo geral Apresentar conceitos importantes na área de Gestão de Pessoas e Processos de Recrutamento & Seleção e Integração das Pessoas nas Instituições financeiras Cooperativistas, tendo como objetivos específicos: Apresentar Metodologia DISC aplicada na Gestão de Pessoas, nos Processos de Recrutamento & Seleção e Integração e Gestão de Crise econômica em Decorrência da Pandemia; Apresentar conceitos sobre a Cooperativismo; Demonstrar o perfil de colaboradores de uma cooperativa pesquisada. A cooperativa apresenta em seu quadro maioria do sexo feminino, com alto grau de escolaridade e motivação pelo trabalho. Os objetivos foram alcançados, respondendo à questão problema. Como limitação do artigo, a metodologia utilizada para pesquisa foi feita apenas revisão documental e bibliográfica, neste sentido, sugere-se a realização de novas pesquisas, desta vez de forma quantitativa ou qualitativa em outras instituições financeiras e organizações financeiras
A importância da contabilidade nos processos de gestão das cooperativas de crédito
Authors: Ribeiro Jaciara Xavier Pereira
Published: July 2020

A contabilidade é a ciência responsável pelo estudo dos fenômenos ocorridos no patrimônio das empresas, sendo responsável pelo registro, classificação e demonstração dos fatos ocorridos no patrimônio, através da escrituração contábil. O estudo foi realizado em uma Cooperativa de Crédito denominada SICOOB União. Sendo assim, para a definição do problema de pesquisa levou-se em consideração a expectativa de investigar a importância da Contabilidade nos processos de gestão das cooperativas de crédito. A questão problema da pesquisa é: Como a contabilidade contribui nos processos de gestão das cooperativas de crédito? Tendo como objetivo geral: Apresentar as contribuições da contabilidade nos processos de gestão das cooperativas de crédito e objetivos específicos: Descrever conceitos sobre a contabilidade e seus tipos, Sistemas de informações gerenciais e  cooperativismo com foco no ramo crédito; Analisar os dados contábeis e discutir os resultados apresentados nos relatórios emitidos pelos Sistemas de Informações gerenciais, indicadores e gráficos utilizadas pelo SICOOB União, mês base setembro de 2018; Comparar a evolução dos números financeiros da cooperativa com base nos 10/2017 e 09/2018; e por fim, avaliar a situação financeira do SICOOB União com base nos números apresentados. Os objetivos foram alcançados, respondendo à questão problema. Como limitação do artigo, a metodologia utilizada para pesquisa foi descritiva, apenas com revisão documental e bibliográfica, neste sentido, sugere-se a realização de novas pesquisas, desta vez de forma quantitativa ou qualitativa na Cooperativas de Crédito pesquisa, de forma a ampliar as conclusões sobre a importância da contabilidade nos processos de gestão das cooperativas de crédito.
Strategies for Overcoming Disparities for Patients With Hematologic Malignancies
and for Improving Enrollment on Clinical Trials
Authors: Williams Stephanie , Ayers Amy , Hildebrandt Michelle , McNeill Lorna , Flowers Christopher
Published: July 2020

A multitude of factors contribute to cancer disparities, including, but not limited
to, differences in diet, lifestyle, environmental exposures, cultural beliefs, genetic
and biological factors related to ancestry, socioeconomic status (SES), and
access to health care. More investigation is needed in evaluating these factors in
less common cancers and hematological malignancies. Addressing disparities in
cancer incidence, prevalence, burden of disease, mortality, and survivorship that
have been documented among racial/ethnic minority populations with blood
cancers will require multilevel models of the interactions between relevant factors
and performance of translational research that uses knowledge of cancer
biology to develop and test the feasibility of interventions that can impact human
end points. Such work must address a wide range of research areas, including
prevention, early detection, diagnosis, treatment, epidemiology, cancer control,
treatment, and survivorship. To be effective, efforts should be made to advance
these research findings to applications that can transform clinical practice and health care delivery. We reviewed the literature to define a framework for overcoming
disparities for patients with hematologic malignancies and to improve patient enrollment on clinical trials.
Perfil dos pacientes acometidos pela hanseníase em uma unidade de referência
Authors: Santos Rayanna Souza , Bragança Gleide Maria Gatto , Filho Carlos Augusto Moura Santos , Amorim Rayane Nascimento
Published: July 2020

OBJETIVOS: Analisar o perfil do paciente acometido pela hanseníase atendido em uma unidade de referência no estado de Sergipe. MÉTODO: Estudo transversal e observacional realizado com 100 indivíduos afetados pela hanseníase. Utilizou-se um questionário sociodemográfico e clínico. RESULTADOS: Observou-se idade média de 48,2 anos (± 13,9), a maioria dos pacientes era do sexo masculino (59%), casada (45%), ensino fundamental incompleto (36%), multibacilar (87%) e com grau de incapacidade física (GIF) I (63%). CONCLUSÃO: Há predomínio na amostra de homens, indivíduos com baixa escolaridade e casados. O maior número de pacientes multibacilares contribui como importante fonte de infecção e manutenção da cadeia epidemiológica da endemia. Já o alto índice de pacientes com incapacidades físicas demonstra atraso no diagnóstico e início do tratamento.
As relações do assistente social em equipes interprofissionais: o serviço social no espaço sociojurídico
Authors: Behr Raquel Bergmann
Published: July 2020

Autores conceituados orientam que o pioneiro em absorver assistentes sociais na esfera pública, foi o Juízo de Menores do Rio de Janeiro, naquele contexto, capital da República. Em continuidade, após a elaboração do novo Código de Menores, em 1979, e do Estatuto da Criança e do Adolescente em 1990, acrescentaram para acentuar a necessidade de atuação do/a assistente social nas práticas desenvolvidas no espaço sociojurídico. A característica coercitiva do Estado, destaque dessas instituições, culminam em culturas organizacionais hierarquizadas, e atuações de significativo cunho autoritário. Considerando que a Categoria Direito, se configura em uma área de disputas constantes, as instituições ‘sociojurídicas’ também o são. Esse artigo trata de expor, as dificuldades da categoria Serviço Social, em determinar seu campo de atuação e adquirir visibilidade, ao perceber a necessidade de inserção no espaçosociojurídico.