Spin-transfer-torque-induced phenomena
Authors: Hirohata Atsufumi 
Published: September 2011

This cluster, consisting of five invited articles on spin-transfer torque, offers the very first review covering both magnetization reversal and domain-wall displacement induced by a spin-polarized current. Since the first theoretical proposal on spin-transfer torque—reported by Berger and Slonczewski independently—spin-transfer torque has been experimentally demonstrated in both vertical magnetoresistive nano-pillars and lateral ferromagnetic nano-wires. In the former structures, an electrical current flowing vertically in the nano-pillar exerts spin torque onto the thinner ferromagnetic layer and reverses its magnetization, i.e., current-induced magnetization switching. In the latter structures, an electrical current flowing laterally in the nano-wire exerts torque onto a domain wall and moves its position by rotating local magnetic moments within the wall, i.e., domain wall displacement. Even though both phenomena are induced by spin-transfer torque, each phenomenon has been investigated separately. In order to understand the physical meaning of spin torque in a broader context, this cluster overviews both cases from theoretical modellings to experimental demonstrations.

The earlier articles in this cluster focus on current-induced magnetization switching. The magnetization dynamics during the reversal has been calculated by Kim et al using the conventional Landau--Lifshitz–Gilbert (LLG) equation, adding a spin-torque term. This model can explain the dynamics in both spin-valves and magnetic tunnel junctions in a nano-pillar form. This phenomenon has been experimentally measured in these junctions consisting of conventional ferromagnets. In the following experimental part, the nano-pillar junctions with perpendicularly magnetized FePt and half-metallic Heusler alloys are discussed from the viewpoint of efficient magnetization reversal due to a high degree of spin polarization of the current induced by the intrinsic nature of these alloys. Such switching can be further operated at high frequency resulting in an oscillator, as shown in the article by Sulka et al. These results provide fundamental elements for magnetic random access memories.

The later articles discuss domain-wall displacement. Again this phenomenon is also described by Shibata et al based on the LLG equation with spin-torque terms. This analytical model can explain the details of the depinning mechanism and a critical current for the displacement. Experimental observation is presented in the subsequent article by Malinowski et al, showing the depinning processes for the cases of intrinsic and extrinsic pinning sites. Here, the detailed magnetic moment configurations within the wall hold the dominant control over the critical current. These results can be used for future 3-dimensional magnetic memories, such as racetrack memory proposed by IBM.

We sincerely hope this cluster offers an up-to-date understanding of macroscopic behaviour induced by spin-transfer torque and contributes to further advancement in this exciting research field. We are grateful to all the authors for spending their precious time and knowledge submitting to this cluster. We would also like to thank Professor Kevin O'Grady for his kind offer of the opportunity to make this review accessible to a general audience.