Design and fabrication of single photon detector with ultra-large area superconducting nanowire array
Authors: Zhang Xiao , Lü Jia-Yu , Guan Yan-Qiu , Li Hui , Wang Xi-Ming , Zhang La-Bao , Wang Hao , Tu Xue-Cou , Kang Lin , Jia Xiao-Qing , Zhao Qing-Yuan , Chen Jian , Wu Pei-Heng ,   Reaserch Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Published: September 2022

<sec>Superconducting nanowire single-photon detector (SNSPD) is one of the most mainstream single-photon detectors at present, which possesses excellent comprehensive performance, including low time jitter, high efficiency, low dark count, and wide spectrum. However, the traditional single-pixel SNSPD suffers a lack of spatial resolution and a small photosensitive surface, which becomes a bottleneck associated with optical coupling efficiency. In addition, a single-pixel detector has no ability to resolving the photon number, whose working speed cannot be further improved due to the existence of dead time. While array devices can make up for the above deficiencies. Therefore, the development of a large-area SNSPD array is the key to free-space photon detection and other applications. In recent years, the relevant researches have been conducted and great progress has been achieved. However, the large-area SNSPD array is facing some intractable problems, including complex process, low yield, and difficult fabrication, owing to the photosensitive surface consisting of a large number of superconducting nanowires. Photons imaging is verified with this device. At present, in the existing studies mainly used is the three-dimensional technology with complicated process steps to fabricate large array SNSPDs. How to simplify the process has become a research focus.</sec><sec>In this work, we design an ultra-large area nanowire array structure and propose an innovative plane process. Taking advantage of the property that the electron beam resists HSQ (hydrogen silsesquioxane polymer) forming a silicon oxide electrical isolation layer after exposure, we fabricate a large array SNSPD with a simplified two-dimensional process and realize dimensionality reduction for the traditional three-dimensional process of a multilayer structure. By measurement in parallel, the devices enjoy high yield with no bad points found. In addition, a full-superconducting electrode is adopted in our design to reduce the thermal effect of resistors. We add series and parallel resistors in the pixels to divide the bias current evenly and expand the array scale optionally. At the same time, we also offer the design details of array SNSPDs, the related simulation of hot spots to verify the rationality of the design, the optimization of the preparation conditions of array devices, measurement scheme formulation, and other related work.</sec><sec>This work provides an idea for designing and fabricating ultra-large array SNSPD, which is expected to be applied to the fabrication of megapixel array SNSPDs. Combined with an efficient readout circuit, a focal plane photon detection and imaging system with both a large field of view and high sensitivity can be realized.</sec>