bluuebunny/crossref_metadata_2025 huggingface dataset:
Conceptualizing the Role of Leadership Strategy in the Context of Strategic Management Process: A Review of Literature
Authors: Adoli Hebron L. , Kilika James M.
Published: December 2020

A focus on the nature of strategic management process and its contribution to answer fundamental question of how firms achieve sustainable competitive advantage and improved performance through use of suitable leadership has led to organizational leaders formulating strategies through approaches that are systematic, rational as well as logical to strategic choices at corporate, business and functional levels. This has continued to be a major milestone in strategic management process in establishing a clear strategy that makes an organization competitive through suitable management of its workforce and application of strategies that are not easily imitated. This calls for an appropriate leadership strategy aimed at eliminating the gap in human capital that exists in various levels of strategic management process in an organization between the current and desired state of leadership in the future that will address the organization deficiencies by considering the right number of leaders required by the firm for the next at least 5 years with required leadership qualities, skills, behaviour, team capabilities and appropriate culture. This study has focused on a comprehensive review of conceptual and theoretical literature that brings out the role of leadership strategy in the context of strategic management process that leads to improved organizational performance. The concept of organizational capabilities and organization context were found to play a relevant role that mediate and moderate this relationship respectively. The study has proposed a suitable theoretical framework that links leadership strategy, organizational capabilities, and context and organization performance based on the identified gaps for guiding future research on leadership strategy. Six theories including; Pasmore model as lead theory, Path-Goal theory, Contingency theory, transformational leadership, Resource based view and Upper echelon theory underpinned the study in understanding the constructs. In summary, based on the reviewed literature, the study on leadership strategy is found critical for organization success and this calls for further testable empirical data and analysis to validate this claim.
What Drives Teaching Performance at School? The Determinants of School Teacher Performance
Authors: Quarm Richmond Sam , Bross Noverdi , Kanto Dwi Sunu
Published: December 2020

This study aims to analyze the factors that affect teacher performance with organizational commitment as a mediation between professional commitment and job satisfaction to teacher performance. In the realization of the achievement of target student scores based on the results of the National Examination for the 2016/2017 academic year to 2018/2019 academic year for the Djakarta Christian Schools Association in South Jakarta. The problem has been identified that the lack of attention from the school is an impact on teacher performance. The unilateral policies given to the teacher have become tiring pressure on the teacher and have an impact on the lack of desire for creativity in improving student learning outcomes as seen in the results of students' final exam scores. This study uses Professional Commitment and Job Satisfaction as independent variables, Teacher Performance as the dependent variable, and Organizational Commitment as a moderating variable. This study used 29 teachers as respondents and used SPSS software in processing and analyzing data. This research results that Job Satisfaction affects Organizational Commitment, Job Satisfaction affects Teacher Performance, Organizational Commitment affects Teacher Performance, Professional Commitment affects Organizational Commitment and Professional Commitment affects Teacher Performance. Job Satisfaction indirectly affects Teacher Performance through Organizational Commitment, and Professional Commitment indirectly affects Teacher Performance through Organizational Commitment.
“I Think It’ll All Blow Over in the End”: How Young People Perceive the Impact of COVID-19 on Their Future Orientations - March 2022
Authors: Henkens Juul , Visser Kirsten , Finkenauer Catrin , stevens gonneke
Published: December 2020

Since the beginning of 2020, the coronavirus disease (COVID-19) and its lockdowns have changed the current lives of young people drastically. Given the importance of future orientations for young people’s mental well-being, it is important to investigate if and how this lockdown affected young people’s future orientations. In this study, 34 Dutch young people (aged 16-24) with diverse backgrounds were interviewed during the lockdown of spring 2020 in the Netherlands. Results showed that young people experienced effects of COVID-19 on their current lives and short-term futures, but according to these young people, their long-term futures were not affected by the first COVID-19 lockdown. The latter finding may be explained by young people’s assumed temporality of the pandemic, their general optimistic attitudes, two-track thinking, strong feelings of agency, and flexibility.
Six Focus Behaviors for Policymakers to Mitigate Climate Change
Authors: Heller Kate , Berger Michael , Gagern Antonius , Rakhimov Abdurakhim , Thomas John , Thulin Erik
Published: December 2020

Policymakers have a crucial opportunity to help avert climate catastrophe with policies that promote emissions reductions. Policies informed by behavioral science principles that encourage individuals to reduce emissions can effectively complement broader top-down policies such as carbon pricing, provided they focus on those behaviors with the highest potential to reduce emissions. We conducted an analysis to identify behaviors that have the greatest practical potential to reduce emissions in the U.S. and modeled the impact of their uptake. Our analysis identifies six priority behaviors that, if adopted by 5-10% of the U.S. population, can lower current national emissions by 464 million tons of carbon dioxide equivalent per year (MtCO2e/year), or 7% overall annually. We identify promising behavioral mechanisms that can inform policy design for each of these behaviors.
Scientific Literacy Learning for Elementary Education
Authors: Setiawan Adib Rifqi , Saputri Wahyu Eka
Published: December 2020

This research constructs learning design to guide primary students on achieving scientific literacy. The approach used is mixed method sequential exploratory model. This results shows that validity and reliability of this design in general on the category can be used. The implementation of 35 students in Kabupaten Kudus revealed that this design could be applied by the teacher and could be responded to by students during learning.
Cultural Crisis of Caste Renouncer: A Study of Dasnami Sanyasi Identity in Nepal
Authors: Giri Madhu
Published: December 2020

Jat Nasodhanu Jogiko is a famous mocking proverb to denote the caste status of Sanyasi because the renouncer has given up traditional caste rituals set by socio-cultural institutions. In other cultural terms, being Sanyasi means having dissociation himself/herself with whatever caste career or caste-based social rank one might imagine. To explore the philosophical foundation of Sanyasi, they sacrificed caste rituals and fire (symbol of power, desire, and creation). By the virtues of sacrifice, Sanyasi set images of universalism, higher than caste order, and otherworldly being. Therefore, one should not ask the renouncer caste identity. Traditionally, Sanyasi lived in Akhada or Matha, and leadership, including ownership of the Matha transformed from Guru to Chela. On the contrary, Dasnami Mahanta started marital and private life, which is paradoxical to the philosophy of Sanyasi. Very few of them are living in Matha, but the ownership of the property of Mathatrans formed from father to son. The land and property of many Mathas transformed from religious Guthi to private property. In terms of cultural practices, Dasnami Sanyasi adopted high caste culture and rituals in their everyday life. Old Muluki Ain 1854 ranked them under Tagadhari, although they did not assert twice-born caste in Nepal. Central Bureau of Statistics, including other government institutions of Nepal, listed Dasnamiunder the line of Chhetri and Thakuri. The main objective of the paper is to explore the transformation of Dasnami institutional characteristics and status from caste renunciation identity to caste rejoinder and from images of monasticism, celibacy, universalism, otherworldly orientation to marital, individualistic lay life. Both philosophical orientation and behaviors are transformed. Who are the Dasnami Sanyasi? Why did the Dasnami Sanyasis campaign for the identity? How has the Dasnami Sanyasi been changing? Based on key informant interviews, observations in different Dasnami Sanyasi communities, their historical institutions, and self-reflection as a member of Dasnami Sanyasiare methods of data collection.
The results and prospects of maize breeding in the Agricultural Research Center “Donskoy”
Authors: Krivosheev G. Ya. , Shevchenko N. A. , Ignatiev A. S.
Published: December 2020

The current paper has presented the results of breeding work on maize in the Agricultural Research Center “Donskoy”. The three-line and double interlinear middle early and middle ripening maize hybrids of various economic use ‘Zernogradsky 242 MV’, ‘Zernogradsky 282 MV’, ‘Zernogradsky 288 MV’, ‘Zernogradsky 299 MV’, ‘Zernogradsky 354 MV’, ‘Zernogradsky MV’, ‘Stepnyak MV’ were developed and included into the State List of Breeding Achievements from 2006 to 2020. The Competitive Variety Testing has identified a new high-heterosis simple hybrid ‘Zernogradsky 352 MB’ and the new early ripening hybrids ‘Krucha M × KB 215’, ‘Krucha M × SP 56/57’ with low harvesting grain moisture. The main method used to develop maize hybrids was an interline hybridization using heterosis in the first generation (F1 ). There have been determined the priority directions of further breeding, namely early ripeness, grain humidity-transfer intensity during ripening, drought resistance, high starch content in grain. There has been developed new initial material for each direction of breeding. There have been selected the introduced testers (‘Alpha M’, ‘Almaz M’, ‘Aurora S’, ‘Milena M’, ‘Istok S’) to develop early-ripening hybrids. There have been identified the early and middle-early ripening self-pollinated lines ‘C 207’, ‘RD 12’, ‘TVA 308’, ‘PLS 61’, ‘KB 215’, etc., with a high grain humidity-transfer intensity during ripening (0.95–1.30% per day), low harvest moisture content of grain (10.8–13.8%). There have been developed the new self-pollinated waxy maize lines (24/29/5, 25/64/10, 26/8, 26/4, 26/80, 24/28) with 68.1–69.8% of amylopectin starch in grain. There have been identified the new self-pollinated maize lines resistant to water stress (DS 498/217-3, DS 257/85-5, DS 498/203, KB 262, etc.) promising for breeding drought-resistant maize hybrids.
The study of East African grain sorghum samples in the conditions of the Rostov region
Authors: Kovtunov V. V. , Kovtunova N. A. , Lushpina O. A. , Sukhenko N. N. , Shishova E. A. , Kravchenko N. S.
Published: December 2020

Sorghum is one of the main food and feed crops in the world. Rapid population growth in Africa requires a growing amount of local foods such as sorghum. Therefore, breeding work aimed at developing highly productive sorghum varieties and hybrids adapted to the soil and climatic conditions of Africa and the arid conditions of southern Russia is of great urgency. Therefore, it was necessary to identify the adapted samples with valuable economically valuable traits. The current study has been carried out on the experimental plots of the laboratory for grain sorghum breeding and seed production of the FSBSI “Agricultural Research Center “Donskoy”. As objects of the study there have been used the grain sorghum varieties of the National Research Institute of Semi-Arid Resources (NaSARRI) of the Republic of Uganda ‘Seso 1’, ‘Seso 3’, ‘Narosorg 1’, ‘Narosorg 2’, ‘Narosorg 3’, ‘Narosorg 4’, ‘Epuripur’, as well as the variety ‘Zernogradskoe 88’ sown as the standard variety. The study was conducted in accordance with the Methodology of State Variety Testing of Agricultural Crops and B. A. Dospekhov’s Methodology of a field trial. The purpose of the current study was a comprehensive estimation of grain sorghum varieties developed in the research institutions in Uganda under the conditions of the Rostov region to use the selected samples in further breeding work as sources of economically valuable traits. In the conditions of the Rostov region the Ugandan varieties belonged to the group of middle ripening and late ripening varieties. The plant height in the studied varieties varied from 155 to 210 cm. According to the trait “number of grains per panicle” the varieties had a large number of grains (1829–2530 pcs.). The main share of the NaSARRI varieties had a high percentage of raw protein in grain (13.6–14.9%). A low tannin content was established in the varieties ‘Seso 1’ (0.54%), ‘Epuripur’ (0.66%) and ‘Narosorg 1’ (0.71%).
The mutual study of the Ugandan and Rostov rice varieties
Authors: Kostylev P. I. , Krasnova E. V. , Aksenov A. V. , Lamo J.
Published: December 2020

Rice is one of the most important food crops in the world. The development of new rice varieties requires a thorough study and involvement of gene pool from different countries in breeding work. The purpose of the current study was to conduct a mutual ecological testing of the rice varieties in the Rostov region of Russia (FSBSI “Agricultural Research Center “Donskoy”) such as ‘Akustik’, ‘Aromatik 1’, ‘Aromatny’, ‘Kuboyar’, ‘Yuzhanin’ and the Ugandan (NaCRRI) ‘Nerica 1’, ‘Nerica 4’, ‘Komboka’, ‘Wita 9’. These samples have shown a wide range of resistance to blast and other diseases. The research was carried out in the Proletarsky district of the Rostov region. As a result, the rice varieties were studied for a number of important economic and biological traits. The growing season from sowing to ripening was 131–139 days for two varieties ‘Nerica 1’ and ‘Nerica 4’ under the conditions of the Rostov region, and 110 days for the standard variety ‘Komandor’. The other two varieties ‘Komboka’ and ‘Wita 9’ were very late maturing and did not bloom. All samples had a modern low-growing plant habit with upright rigid leaves and long drooping panicles (17–23 cm). Plant height of the Ugandan varieties ranged from 70 to 90 cm. The grains were elongated with 29–31 mg of weight. Number of spikelets per panicle was 85 and 200, respectively. The varieties ‘Nerica 1’ and ‘Nerica 4’ were used in hybridization with the Russian varieties ‘Kontakt’ and ‘Boyarin’. The preliminary study of Russian rice varieties in Uganda showed that RU 105 (‘Aromatny’) and RU 101 (‘Aromatik 1’) were resistant to rice yellow spot virus (‘RYMV’), blast and brown leaf spot. The varieties were selected for further study in the conditions of Uganda.
Wahyu Alkitabiah dalam Tinjauan Hermeneutika Ricoeur
Authors: Kleden Leo
Published: December 2020

This article attempts to explain the idea of revelation in the Scripture according to Paul Ricoeur's hermeneutic philosophy. This paper consists of two parts. The first part describes the theory of text in Ricoeur's hermeneutics. Ricoeur's most important contributions to this section are his description of threefold semantic autonomy: semantic autonomy with respect to the author's subjective intention outside the text, semantic autonomy with respect to the original cultural context in which the text was written, and semantic autonomy with respect to the original audience or addressee. An important consequence of semantic autonomy is that interpretation of a text is never reproductive but productive. The second part explains that the language of Scripture is much more like poetic language than scientific language. Poetic language is the language of disclosure, which expresses a deeper dimension of reality. The next five literary genres in the Scriptures are discussed, through which divine revelation is expressed: namely, narrative, prophetic, prescriptive, wisdom and hymnic genre. With that Ricoeur shows the richness of biblical revelation in its various dimensions, which together form “a polysemic and polyphonic concept of revelation”.
Keywords: text, discourse, literary genre, semantic autonomy, revelation, narrative, hymn
Infrared Light Emission From Semiconductor Devices
Authors: Barton D.L. , Tangyunyong P. , Soden J.M. , Liang A.Y. , Low F.J. , Zaplatin A.N. , Shivanandan K. , Donohoe G.
Published: December 2020

We present results using near-infrared (NIR) cameras to study emission. characteristics of common defect classes for integrated circuits (ICs). The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and very low read noise. The array was developed for infrared astronomy and has high quantum efficiency in the wavelength range from 0.8 to 2.5 µm. For comparison, the same set of samples used to characterize the performance of the NIR camera were studied using a non-intensified, liquidnitrogen- cooled, slow scan CCD camera (with a spectral range from 400-1100 nm). Our results show that the NIR camera images all of the defect classes studied here with much shorter integration times than the cooled CCD, suggesting that photon emission beyond 1 µm is significantly stronger than at shorter wavelengths.
Golden Devices II: Alchemy in the 0.35μm Era
Authors: Van Doorselaer K. , Young R. , Dawes N.
Published: December 2020

The paper describes the approach that was developed to cope with the specific difficulties encountered with FIB circuit modification on the 0.5 and 0.35um technologies from a multitude of silicon vendors. This approach involves adaptations in FIB hardware (insulator deposition), software (image alignment), design practice (alignment marks, spare parts, routing recommendations) and FIB practice (procedure for node localisation and contacting, via drill and fill). The latter seems to be a major factor limiting FIB circuit repair feasibility: although it is perfectly feasible to drill deep and small vias (e.g. between minimum spacing overlying metallization), it is not evident to reproducibly fill such holes and obtain a good and reliable via resistance. This limits the minimum size of FIB vias to deep circuit nodes. The developed total approach enables to continue the use of FIB for circuit repair on the new generations of processes, with all the well-known benefits w.r.t. cost savings and Time-To-Market.
Application of Photoemission Microscopy and Focused Ion Beam Microsurgery to an Investigation of Latchup
Authors: Mayer D.C. , Ferro R.J. , Leung D.L. , Dooley M.A. , Scarpulla J.R.
Published: December 2020

Radiation-induced latchup sites in a high-performance commercial application-specific integrated circuit (ASIC) manufactured in a bipolar gate array have been identified using a photoemission (PE) microscope before and after isolating individual circuit elements with a focused ion beam (FIB) system. Latchup sites were determined to be associated with grounded unused resistors and transistors in an emitter-coupled logic (ECL) input buffer. Simulation of the oxide isolation scheme confirmed the presence of pnpn structures at the likely latchup sites. A corrective action to redesign the layouts to disconnect unused resistors and transistors resulted in successful elimination of latchup in the ECL buffers.
TEM Cross-Sectional Analysis of ESD Induced Damage in Input Protection Circuitry
Authors: Nguyen P.T. , Patrick D.S. , Hayenga M.L.
Published: December 2020

Transmission electron microscopy (TEM) coupled with scanning electron microscopy (SEM) were used to observe the damage caused by machine model (MM) electrostatic discharge (ESD) testing on the ESD protection circuitry of input pins stressed with different ESD voltages. Contact damage was observed in the n-well resistor of the ESD protection circuitry. TEM results of various cross-sections show the formation of a silicon melt beneath the contacts of the n-well resistor. Junction spiking was also observed on some of the stressed devices.
Failure Analysis of Flip-Chip Interconnections Through Acoustic Microscopy
Authors: Diaz de Leon O. , Nassirian M. , Todd C. , Chowdhury R.
Published: December 2020

Integration of circuits on semiconductor devices with resulting increase in pin counts is driving the need for improvements in packaging for functionality and reliability. One solution to this demand is the Flip- Chip concept in Ultra Large Scale Integration (ULSI) applications [1]. The flip-chip technology is based on the direct attach principle of die to substrate interconnection.. The absence of bondwires clearly enables packages to become more slim and compact, and also provides higher pin counts and higher-speeds [2]. However, due to its construction, with inherent hidden structures the Flip-Chip technology presents a challenge for non-destructive Failure Analysis (F/A). The scanning acoustic microscope (SAM) has recently emerged as a valuable evaluation tool for this purpose [3]. C-mode scanning acoustic microscope (C-SAM), has the ability to demonstrate non-destructive package analysis while imaging the internal features of this package. Ultrasonic waves are very sensitive, particularly when they encounter density variations at surfaces, e.g. variations such as voids or delaminations similar to air gaps. These two anomalies are common to flip-chips. The primary issue with this package technology is the non-uniformity of the die attach through solder ball joints and epoxy underfill. The ball joints also present defects as open contacts, voids or cracks. In our acoustic microscopy study packages with known defects are considered. It includes C-SCAN analysis giving top views at a particular package interface and a B-SCAN analysis that provides cross-sectional views at a desired point of interest. The cross-section analysis capability gives confidence to the failure analyst in obtaining information from a failing area without physically sectioning the sample and destroying its electrical integrity. Our results presented here prove that appropriate selection of acoustic scanning modes and frequency parameters leads to good reliable correlation between the physical defects in the devices and the information given by the acoustic microscope.
Spatial Evaluation of Resolution in a Scanning Ultrasonic Microscope. Microassembling Technologies Characterization: Differences Between A-Scan and C-Scan Analysis Modes
Authors: Bechou L. , Ousten Y. , Danto Y. , Leclavé J.-E. , Aude M.
Published: December 2020

The major interest presented by a Scanning Acoustic Microscope (SAM) for microassembling technologies is to characterize system integrity without alteration in internal structures of the different samples. But ultrasonic waves nature, propagation diversity and spatial resolution obtained close to optical one, induce instructive information contained into images. So the interpretation quality images will be directly linked with samples nature, used tool thorough and spatial ultrasonic probe resolution. In this paper, we present first an analytical approach of spatial resolution of SAM. Moreover, we propose calculations about field depth within media. Then, we correlate theoretical results by performing tests on special calibrated samples with two microscopes: commercial one and specific acoustic system developed in IXL Laboratory. In a second time, we characterize few microassembling technologies with two techniques: A-SCAN and C-SCAN analysis modes. Both methods highlight some differences in ability detection of weak defects due to highest interface view (best resolution and contrast) in particular with the C-SCAN mode. In fine, we show typical microassembling technologies analysis and we conclude about the place of SAM in failure control and reliability analysis.
Liquid Metal Embrittlement of Copper Wires
Authors: Brown L. E.
Published: December 2020

Intermittent opens in hand-assembled electronic components have a number of expected causes. In this case the failure mechanism that was identified is of concern in certain industries, but is unexpected in the electronics business. Solder in solder pots and in flow solder systems is expected to become contaminated with the various metals and other materials that the solder contacts during use. In the analysis presented here, the solder was determined to be contaminated with mercury. This contaminated solder caused wires tinned in the solder to fracture due to liquid-metal embrittlement. Liquid-metal embrittlement (LME) is the reduction in metal ductility caused by contact with liquid metal.
Automatic IC Die Positioning in the SEM
Authors: Tan H.W. , Phang J.C.H , Thong J.T.L
Published: December 2020

This paper presents a new automatic die positioning system for failure analysis work in the scanning electron microscope (SEM). The system makes use of machine vision to automatically locate a prespecified failure site on an integrated circuit (IC) sample, without the need for a high-accuracy specimen stage or modifications to existing SEM hardware. Depending on the appearance of the desired failure site, either image registration or feature tracking is used to locate the site. To locate failure sites containing unique and distinguishing features, such as those found on logic ICs, an image registration procedure is used. Experiments carried out on a microprocessor and an analogue-to-digital converter show that the new system is able to accurately locate the failure site, even in the presence of IC sample rotation and image scaling. Moreover, the accuracy of the technique has been shown to be independent of the complexity and minimum feature size of the sample used. To locate failure sites containing repetitive IC patterns, such as those from DRAM samples, a feature tracking approach was incorporated into the original die positioning algorithm. The final system can therefore locate many types of failure sites, regardless of whether they have unique features or repetitive IC patterns.
Spray Cooling for Time Resolved Emission Measurements of ICs
Authors: Goruganthu Rama R. , Bethke David , McBride Shawn , Crawford Tom , Frank Jonathan , Cotton Dan , Cader Tahir
Published: December 2020

Spray cooling is implemented on an engineering tool for Time Resolved Emission measurements using a silicon solid immersion lens to achieve high spatial resolution and for probing high heat flux devices. Thermal performance is characterized using a thermal test vehicle consisting of a 4x3 array of cells each with a heater element and a thermal diode to monitor the temperature within the cell. The flip-chip packaged TTV is operated to achieve uniform heat flux across the die. The temperature distribution across the die is measured on the 4x3 grid of the die for various heat loads up to 180 W with corresponding heat flux of 204 W/cm2. Using water as coolant the maximum temperature differential across the die was about 30 °C while keeping the maximum junction temperature below 95 °C and at a heat flux of 200 W/cm2. Details of the thermal performance of spray cooling system as a function of flow rate, coolant
Failure Analysis of Short Faults on Advanced Wire-Bond and Flip-Chip Packages with Scanning SQUID Microscopy
Authors: Hsiung Steve K. , Tan Kevan V. , Komrowski Andrew J. , Sullivan Daniel J. D. , Gaudestad Jan
Published: December 2020

Scanning SQUID (Superconducting Quantum Interference Device) Microscopy, known as SSM, is a non-destructive technique that detects magnetic fields in Integrated Circuits (IC). The magnetic field, when converted to current density via Fast Fourier Transform (FFT), is particularly useful to detect shorts and high resistance (HR) defects. A short between two wires or layers will cause the current to diverge from the path the designer intended. An analyst can see where the current is not matching the design, thereby easily localizing the fault. Many defects occur between or under metal layers that make it impossible using visible light or infrared emission detecting equipment to locate the defect. SSM is the only tool that can detect signals from defects under metal layers, since magnetic fields are not affected by them. New analysis software makes it possible for the analyst to overlay design layouts, such as CAD Knights, directly onto the current paths found by the SSM. In this paper, we present four case studies where SSM successfully localized short faults in advanced wire-bond and flip-chip packages after other fault analysis methods failed to locate the defects.
Failure Mechanisms of Contact Vias in Organic Light Emitting Diode Displays
Authors: Lowes T.D. , Wu L. , Eden K. , Trujillo J.
Published: December 2020

A new via interconnect failure mode found in organic light emitting diode (OLED) displays has been documented. Physical appearance, electrical performance, response to environmental stresses and root cause analyses have been studied using both simplistic and sophisticated failure analysis tools including focused ion beam etching and time of flight secondary ion mass spectroscopy (TOF-SIMS).
Sampling and Reference Considerations for Very High Resolution AFM Analysis
Authors: Gondran Carolyn F. H. , Michelson Diane K.
Published: December 2020

The geometries of several proposed new electronic device structures put constraints on the size of the AFM images that can be obtained in the gate areas. The images that can be obtained on these structures are of a significantly smaller area, at a much higher resolution, than is typically measured. The analysis areas are limited to ~ one-tenth of what is normally scanned. The micro-roughness and feature size information contained in AFM measurements changes with scan size. Care must be taken when introducing such a dramatic change in the measurements being made. Several factors should be considered to determine an appropriate sampling plan and select a proper reference set for these high-resolution measurements. In this paper, several of these factors are discussed in the context of determining a sampling plan and reference targets for sidewall micro-roughness of fins that allow 50 nm analysis areas.
Application of Innovative Wafer-Sort Test Methods for Effective Fault Isolation
Authors: Goh Ivan A. N. , Miu Kenneth , Zhang Johnny , Ma Harley , Yin Wancy
Published: December 2020

During the wafer-sort stage, critical electrical data on the IC chip performance is collected. As technology advances, smaller geometries are continuously implemented to the production line and, as a result, there may be some issues that are difficult to detect and eliminate at the typical wafer-sort or final-test techniques. This paper presents two successful applications of innovative wafer-sort techniques to solve some difficult issues. In the first case, voltage-stress is implemented in the wafer-sort to draw out yield issues which otherwise go undetected. This additional test component helps to screen-out marginal dies and analyze the post-stress spatial pattern. By applying the MERCAD detection system to localize the fault area and the appropriate delayer techniques, metal microbridge is found. In the second case, wafer-sort collects the testing information for the failing scan chains. This information is mapped to the netlist, schematic, and design layout of the chip. Given this information, together with the design layout, the authors are able to narrow down these issues to some metal pattern defects.
“On Wafer” Design Validation Through Complementary Dual-Side Circuit Editing using FIB
Authors: Thompson Mark A. , Chen Calvin , Tsao Chun-Cheng , Han Ming , Tsai Hun Lian
Published: December 2020

We present, a novel solution to focused ion beam (FIB) circuit edit, performed through the back and front surfaces of the same semiconductor device under test (DUT). This complementary dual-side FIB modification was performed at wafer level test, on a wafer piece, utilizing a coaxial photon-ion focused ion beam system. The DUT was found to have excessive Iddq leakage current due to a fault in a tri-state driver circuit, and was determined that two FIB edits were required to validate the proposed correction. Wafer level editing provides a more flexible approach to access the edit sites. We accessed one site via the front side circuitry of the DUT and the other through the backside silicon. A wafer piece was used for this dual-side edit to demonstrate relatively uncomplicated sample preparation for FIB access, and still allow wafer level probing afterward. The silicon was locally thinned by mechanical means over the specific die for backside FIB editing. Following the backside edit, the front side edit was performed, with minimal sample preparation. The modifications were validated following these edits, where Iddq and emission measurement were nominal.
Failure Analysis of SOI Bipolar Device Using Photon Emission Microscopy
Authors: Simons Todd M. , Davis Bob
Published: December 2020

Photon emission microscopy (PEM) provides a valuable first step in the failure analysis process. An analysis of a mixed signal bipolar/CMOS silicon on insulator (SOI) device revealed an abnormal emission site that appeared to emanate from the oxide isolation ring. Subsequent mechanical probing of the emitting bipolar transistor revealed node voltages nearly identical to a known good reference unit that had no emission site at the affected transistor. This article analyzes the reasons for the emission site on one transistor and not the other even though the node voltages were the same. It was observed that while the node voltages were nearly identical, the available current paths were not. The different paths directly related to the amount of available carriers for recombination in the base. The construction of the SOI device creates unique optical paths for emission sites not observed in non-SOI devices. It can be concluded that the failure mechanism does not always reside at the abnormal PEM site.
Failure Analysis of Broken Stitch Bonds in TSSOP Packages Using Scanning Acoustic Microscopy (SAM) and Time Domain Reflectometry (TDR)
Authors: Abd-AlRahman Bilal , Lewis Corey , Simons Todd
Published: December 2020

A failure analysis application utilizing scanning acoustic microscopy (SAM) and time domain reflectometry (TDR) for failure analysis has been developed to isolate broken stitch bonds in thin shrink small outline package (TSSOP) devices. Open circuit failures have occurred in this package due to excessive bending of the leads during assembly. The tools and their specific application to this technique as well as the limitations of C-SAM, TDR and radiographic analyses are discussed. By coupling C-SAM and TDR, a failure analyst can confidently determine whether the cause of an open circuit in a TSSOP package is located at the stitch bond. The root cause of the failure was determined to be abnormal mechanical stress placed on the pins during the lead forming operation. While C-SAM and TDR had proven useful in the analysis of TSSOP packages, it can potentially be expanded to other wire-bonded packages.
Red Phosphorous Induced Shorts in Plastic Packages
Authors: Huerta Rafael , Wu Nevil
Published: December 2020

Red phosphorous is one of the inorganic phosphorous compounds used as a flame retardant in microelectronic applications. One of the concerns is a red phosphorus induced pin-to-pin short in the molding compound. This paper discusses the red phosphorous-induced shorts in a 100 Lead TQFP (14x20x1.4mm) plastic package. The devices first failed on boards in the field. After de-soldering them from the boards, the devices were tested and found to have resistive pin-to-pin shorts. Common failure analysis techniques, including parallel lapping, cross sectioning, and X-ray, failed to reveal the resistive shorts and the shorting mechanism. Removing the molding compound by means of a wet chemical etching method using sulfuric acid on a hot plate worked very well and enabled to expose particles in three dimensions. It was concluded that the resistive shorts were not necessarily due to a single large phosphorous particle, but due to small and fragmented pieces of phosphorous.
Temperature and Humidity Dependent Reliability Analysis of RGB LED Chips
Authors: Fu Jun-Xian , Souri Shukri , Harris James S.
Published: December 2020

Temperature and humidity dependent reliability analysis was performed based on a case study involving an indicator printed-circuit board with surface-mounted multiple-die red, green and blue light-emitting diode chips. Reported intermittent failures were investigated and the root cause was attributed to a non-optimized reflow process that resulted in micro-cracks and delaminations within the molding resin of the chips.
Laser Based Analysis on Analog Circuits with Feedback Loops and a Case Study
Authors: Zhang Fubin , Maxwell David
Published: December 2020

Based on the understanding of laser based techniques’ physics theory and the topology/structure of analog circuit systems with feedback loops, the propagation of laser induced voltage/current alteration inside the analog IC is evaluated. A setup connection scheme is proposed to monitor this voltage/current alteration to achieve a better success rate in finding the fail site or defect. Finally, a case of successful isolation of a high resistance via on an analog device is presented.
The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage
Authors: Li Tsung-Te , Wu Chao-Chi , Chuang Jung-Hsiang , Lee Jon C.
Published: December 2020

This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.
Rapid Yield Learning with Effective Integration of FMEA design for DOE on Test Chip
Authors: Goh Ivan A. N. , McMullan Russell , Fairchild Brock , Ilzhoefer John
Published: December 2020

As semiconductor technology advances from one node to the next, fabrication also becomes increasingly challenging to ramp up production with the most desirable yield and reliable product in a timely manner. At an advanced technology node such as 65nm, the interaction between product design, process margin, and process equipment continues to limit the product yield and reliability performance. Traditional methods, which usually rely on sequential feedback of each experimental lot, require too many learning cycles to achieve target performance, yield, and reliability levels. This paper describes a methodology that potentially accelerates the progression of identifying process and product-design interactions and marginalities during the development stage. It demonstrates the successful application of a failure mode effect analysis design design-of-experiments reticle for extracting process-design interaction information. This approach provides insights to early learning cycles in achieving accelerated critical learning for yield and reliability improvements.
Techniques for Analyzing Solder Joint Properties and Damages in FBGA Packages
Authors: Leinert S. , Jansen S. , Martin N. , Breuer D. , Werner W.
Published: December 2020

The demand for shifting from lead-containing to lead-free solder materials as well as the ongoing efforts for an improvement of the solder joint robustness for fine-pitch ball grid array packages requires ongoing testing of fresh solder alloys, changes in landing pad metallization and reflow processes. This testing includes mechanical and thermal stress tests and a detailed failure and material analysis. Besides the commonly used analysis methods like optical microscopy, scanning electron microscope (SEM) imaging of cross sections, fracture planes and energy dispersive X-ray compositional analyses, other techniques such as ion channeling contrast and transmission electron microscope (TEM) imaging can provide valuable information on intermetallic compounds (IMC) formation at solder joint interfaces. This paper discusses the advantages of SEM imaging of IMC morphology at the pad interface resulting from solder ball etching, focused ion beam imaging of solder ball cross sections with ion channeling contrast, and TEM analyses of failures.
Failure Localization & Design Debug on Mixed-Mode ICs by Using the Dynamic Laser Stimulation Techniques
Authors: Sienkiewicz Magdalena , Sanchez Kevin , Firiti Abdellatif , Crepel Olivier , Perdu Philippe , Lewis Dean
Published: December 2020

Soft defect localization techniques based on laser stimulation have become key techniques for a wide range of FA/debug issues. In this paper, we demonstrate the ability of these techniques to solve critical design issue in mixed-mode device for automotive application which includes analog, logic, RF and power. Utilizing a wide range of laser stimulation techniques, we have determined the most efficient approach for this device to achieve the shortest cycle time. We have established a clear link between fault isolation by laser stimulation techniques and the abnormal behavior of the device with relevant and complete simulation at transistor level.
Real-Time FTIR Etch Depth Measurements in Passive Integrated Silicon Substrates
Authors: Roullier F. , Domengès B. , Poirier P. , Blanvillain J.P.
Published: December 2020

This paper deals with real-time FTIR (Fourier Transform Infrared Reflectometry) etch depth measurements performed on passive integrated silicon substrates. High-density trench capacitors are non-destructively characterized using an FTIR Michelson type spectrometer. Based on effective medium approximations, an effective index associated to the capacitor layer is introduced which allows a good evaluation of the capacitor hole depth. Obtained results correlate well with those from SEM (Scanning Electron Microscopy) measurements performed on cross-sections, on a range going from 12µm to 30µm depth.
Failure Analysis of Multi-Fingered HV Symmetric Devices for Charge-Pumping Circuit Applications
Authors: Wen Liang-Feng , Wang Ting-Chien , Chen Chien-Hui
Published: December 2020

The purpose of this paper is to present a systematic analysis methodology for a newly taped-out High Voltage (HV) product that has encountered a 0% yield issue. In order to identify the root cause and improve the yield, a series of electrical analysis experiments designed to reveal the failure phenomenon of the charge-pumping circuit were applied. Combining spice simulation data, I-V curve measurements, CAFM measurements and nano probing, the difference in resistance for a multi-fingered symmetric device was revealed. A deductive method was then used to conduct layout analysis, and an in-line split experiment was developed to explain the failure phenomenon experienced by the multi-fingered HV symmetric device for a charge-pumping circuit.
Analysis of Bridge Failure between PPG and LPP in Fin Cell Transistor
Authors: Lee Jungho , Chung Sung-Woong , Park Seung Pyo , Chang Myung Sick , Lee Jung Hoon , Hong Sung-Joo
Published: December 2020

As a promising candidate for DRAM scaling beyond 40nm technology, the fin cell transistor (FCT) utilizing p-type poly silicon gate (PPG) was proposed. However FCT makes a lot of bridge failure between word-line and landing-plug poly (LPP) connecting source and drain regions in a cell transistor. But this bridge point is so insignificant that the failure was hardly detected by existing read modify write (RMW) pattern. We analyzed this failure with a particular test method. It mostly has been observed to single and odd parity address. We found out that when adjacent gate is active for reading its cell, only the forward bias can run into the LPP with n-type poly-silicon, and low status data would be taken high level turn unlike recess cell array transistor utilizing n-type poly silicon gate (RCAT-NPG) which both high and low status would be reversed.
Subsurface Imaging of Multi-Level Integrated Circuits Using Scanning Electron Acoustic Microscopy
Authors: Meng L. , Phang J.C.H. , Street A.G.
Published: December 2020

The capability of the Scanning Electron Acoustic Microscopy (SEAM) technique for high resolution non-destructive subsurface imaging at different depths for a multi-level integrated circuit is assessed. Experimental results using a beveled DRAM IC sample are used to quantify the effect of the electron beam energy and modulation frequency on contrast, spatial resolution and depth of focus of SEAM amplitude and phase images.
Deterministic Polishing Applications in Failure Analysis
Authors: Kimball Mark
Published: December 2020

Development of a reliable mechanical decapsulation procedure for an IC process incorporating Cu and organic passivation layers resulted in a better understanding of the polishing process. The improved polishing technique --Deterministic Polishing-- is an adaptation of an advanced polishing technology employed by the optics industry to fabricate highly accurate optical elements. These results can be applied to a broad class of polishing applications.
Analysis of Poly-Si Thin Film Solar Cells by IR-LBIC
Authors: Boostandoost M. , Lin H.-P. , Kerst U. , Boit C. , Gall S.
Published: December 2020

The carrier collection properties of polycrystalline Si (poly-Si) thin film solar cells on glass with interdigitated mesa structure have been locally analysed with Infrared Light Beam Induced Current (IR-LBIC) and compared to LBIC measurements using visible light. The low absorption of IR light leads to a low current level when the light is coupled vertically into the active volume. An enhanced carrier collection has been detected at the corners of the mesa because the etch allows to couple the light horizontally into the solar cell, This investigation shows that IR-LBIC is sensitive to light trapping structures in silicon based thin film solar cells.
Inter Layer Dielectric Defect Induced High Contact Resistance
Authors: Chiu Re-Long , Higgins Jason , Kinder Toby , Tyni Juha , Ying Sharon , Chung Jones
Published: December 2020

High contact resistance can be caused by moisture absorption in low phosphorus content BPTEOS. Moisture diffused through the TiN glue layer is absorbed by the BPTEOS during subsequent thermal processes resulting in increased contact resistance. This failure mode was studied by combining different failure analysis methods and was confirmed by duplication on experimental wafers.
Semi-Automated Full Wafer In-Line SRAM Failure Analysis by Dual Beam Focused Ion Beam (FIB)
Authors: Herschbein Steven B. , Kang Hyoung H. , Berman Harvey E. , Scrudato Carmelo F. , Shore Aaron D. , Dai Bing
Published: December 2020

The presence of a full wafer dual-beam FIB on the process floor gave rise to an environment in which formerly segregated off-line lab and FAB tasks could be linked. One such idea involved a methodology for semi-automated defect targeting based on the spatial predictions of static random access memory (SRAM) electrical testing. The embedded memory blocks on some processors are fully configured and probe pad testable as early as the forth metal level. Using a unique navigation technique that combines electrically sorted SRAM bit map data with CAD coordinate information and stage driven X-Y stepping, the FIB tool was used to locate, section and image prior level defects. We believe that with the inclusion of suitable fiducial markers in the chip design and advanced pattern recognition to aid navigation and guide depth milling, a fully automated process for electrical yield detractor diagnosis could be introduced.