bluuebunny/crossref_metadata_2025 huggingface dataset:
Habituasi Pembacaan Surat Al-Fath Ayat 29 dan Shalawat Nariyah di Pondok Pesantren Hamalatul Quran Jogoroto Jombang
Authors: Albarizi Faris
Published: May 2022

Habituasi pembacaan surat al-Fath ayat 29 dan shalawat Nariyah merupakan suatu fenomena sosial yang berada di Pondok Pesantren Hamalatul Quran Jogoroto Jombang sebagai upaya para santri untuk menghidupkan Alquran di tengah kegiatan harian. Kegiatan ini juga merupakan bentuk dzikr al-Quran yang dilaksanakan di setiap harinya. Dengan tujuan untuk memohon kepada Allah agar dilancarkan rizki dari segala arah yang tidak disangka-sangka, untuk memenuhi kebutuhan pokok pesantren yang digunakan untuk memakmurkan santri.

Penelitian ini dilakukan dengan tujuan untuk mengetahui dasar dari kegiatan habituasi di Pondok Pesantren Hamalatul Quran Jogoroto Jombang, serta mengetahui kegiatan tersebut secara langsung dengan melakukan penelitian secara langsung ke lapangan. Selain itu untuk mengetahui manfaat dari diadakannya kegiatan tersebut. Metode penelitian yang digunakan penulis adalah deskriptif analisis dengan menggunakan pendekatan kualitatif. Jenis penelitian ini adalah penelitian living Quran, dalam jenis penelitian ini berusaha mengkaji bentuk interaksi masyarakat muslim terhadap Alquran pada aspek penerapan teks Alquran dalam kehidupan sehari-hari. Peneliti bekerja sebagai kunci dalam pengumpulan data yang diperlukan dalam memenuhi data untuk pertanyaan dan tujuan penelitian. Teknik pengumpulan data yang digunakan adalah observasi, wawancara dan dokumentasi. Dengan cara mereduksi data, menyajikan data serta penarikan kesimpulan. Hasil penelitian ini adalah: (1) Kegiatan habituasi pembacaan surat al-Fath ayat 29 dan shalawat Nariyah merupakan suatu amaliyah yang digunakan sebagai dzikr al-Quran setiap hari, yang dilaksanakan ditengah-tengah kegiatan lainnya, yang lebih tepatnya dilakukan setelah melaksanakan shalat Hajat. (2) Kegiatan ini melibatkan bahan pokok yang berupa beras dengan tujuan untuk mengundang beras-beras yang lainnya melalui pembacaan surat al-Fath ayat 29 dan shalawat Nariyah kepada Allah. (3) Kegiatan ini secara langsung tidak ada hubungannya dengan kegiatan menghafal Alquran melainkan dzikir kepada Allah, namun secara tidak langsung kegiatan ini juga mengajarkan kepada para santri bahwa sesulit apapun dalam menghafal ayat-ayat Alquran jika dibaca secara berulang-ulang maka dengan sendirinya ayat tersebut akan hafal. (4) Tujuan kegiatan ini adalah memohon kepada Allah agar memberi kecukupan rizki agar niat mulia dan tujuan pesantren memberikan fasilitas biaya gratis kepada para santri yang sedang menghafal Alquran
Pengembangan Tauhid Anak Usia Dini di Era Digital
Authors: Aulia Diajeng , Mujahidah Fatika
Published: May 2022

Permasalahan yang sedang dihadapi oleh Bangsa Indonesia yaitu turunnya pemahaman tauhid terhadap generasi digital. Jika dalam diri anak usia dini tidak diperkenalkan dan ditanamkan tauhid dengan benar maka anak akan memiliki pribadi  yang  kurang  berkarakter  dan berakhlak. Dalam ajaran agama islam, tauhid merupakan pedoman atau tuntutan supaya dapat direalisasikan didalam kehidupan sehari-hari sebab tauhid merupakan suatu ajaran islam yang dibangun berdasarkan syariat-syariat agama. Dengan di tanamkan pengetahuan tauhid  sejak dini maka dapat mengantisipasi anak memiliki sifat menyekutukan Allah, menyimpang dari kebenaran islam dan menampakan diri sebagai muslim tetapi hatinya kafir. Gagasan dan ide klinik parenting menjadi sebuah usulan agar orang tua dapat berperan sebagai guru atau pendidik pertama bagi anak dalam mengajarkan ilmu tauhid yang sesuai dengan ajaran islam, selain itu Allah telah berfirman pada Al Qur’an surah Luqman ayat 13 yang artinya adalah “Dan (ingatlah) ketika Luqman berkata kepada anaknya, di waktu memberi pelajaran kepadanya: “Hai anakku, janganlah kamu mempersekutukan (Allah) sesungguhnya mempersekutukan (Allah) adalah benar-benar kezaliman yang besar”. (QS. Luqman: 13) Dengan begitu sudah dijelaskan bahwasanya orang tua anak memiliki kewajiban kepada anak supaya mengajarkan Tauhid sejak dini, dengan progam parenting maka orang tua dapat lebih dekat dengan anak, sehingga anak usia dini akan selalu mengikuti bimbingan yang diajarkan oleh orang tua anak dan selalu menghubungkan kegiatan sehari-hari dengan ilmu tauhid
TECHNOLOGICAL, ORGANIZATIONAL, AND ENVIRONMENTAL FACTORS INFLUENCING THE ADOPTING OF CLOUD COMPUTING: A QUANTITATIVE STUDY
Authors: Alkandi Ibrahim
Published: May 2022

The aim of this study is to identify the factors influencing the adoption of cloud computing. The Technology-Organization-Environment (TOE) Framework was utilized to analyze the organizational-level adoption of cloud technology using three contexts that might influence decision-makers to use such technology. A quantitative research approach was employed to analyze the hypothesis. Data was collected via a questionnaire-based survey involving 110 participants comprising mid-level managers and IT specialists from a public health organization. The inferential sta-tistical results show that among the three types of context, certain factors influenced decision makers to adopt cloud computing technology. These factors are relative advantage, compatibility of technology, management support, techno-logical readiness, and competition pressure. This research provides fruitful insight and contributes to the existing body of knowledge in the field of technology management, specifically cloud computing technology, and has research and practical implications.
THE OUTLOOK OF THE DIGITAL TRANSFORMATION FOR SUSTAINABILITY
Authors: Popovs Aleksandrs , Drinke Zane
Published: May 2022

The way how companies can comply with the Sustainability agenda is start measuring how Sustainable each company are and it’s possible only using Digital solutions, i.e., the Sustainability analytics need to be based on the data and data need to come from the core business operations. The main objective of the study to give an outlook and high-light that the Sustainability Agenda forces the Digital Transformation and Digital Transformation of the companies accelerates achievements towards Sustainability goals. In the study the authors brought recent examples what proves Digital Transformation as an accelerator towards Sustainability and conducted the survey with 77 participants who are acting as Digital Transformation trusted advisors and representing the EMEA North region. Referring the research results the author observes overall slow movement in Digital Transformations towards addressing Sustainability targets from regular market participants, what can be as a potential subject for further detailed research with the purpose to develop potential accelerators for such transformations.
SUSTAINABLE ENERGY-EFFICIENT CONVERSION OF WASTE TEA LEAVES TO REDUCING SUGAR: OPTIMIZATION AND LIFE-CYCLE ENVIRONMENTAL IMPACT ASSESSMENT
Authors: Chakraborty Rajat , Roy Oindrila
Published: May 2022

Innovative protocols involving energy-proficient pretreatment of waste tea leaves (WTL) for preparation of cellulose and its subsequent photocatalytic hydrolysis (PH) for production of total reducing sugar (TRS) have been reported. The WTL was subjected to alkali pretreatment (60 °C, 1 h) followed by bleaching (employing peracetic acid, 65 °C, 2 h) in a quartz halogen irradiated batch reactor (QHIBR) for efficient separations of lignin and hemicellulose fractions to produce WTL derived cellulose fiber (WTLDCF; 94.5% cellulose). Consequent PH of WTLDCF in QHIBR using combination of Amberlyst-15 and nano-TiO2 catalysts was optimized (parameters: 40 min, 70 °C, 1:30 WTLDCF to water weight ratio and 5 wt. % catalyst concentration) employing Taguchi design that provided maximum 68.25% TRS yield. The QHIBR demonstrated faster hydrolysis and superior energy-efficiency over conventional reactor owing to quartz halogen irradiation. Life cycle assessment indicated an acceptable global warming potential of 2.215 kg CO2 equivalent; thus, establishing an energy-efficient environmentally sustainable WTL valorization process.
Quasi-periodic Accelerations of Energetic Particles during a Solar Flare
Authors: Li Dong , Chen Wei
Published: May 2022

We report the observation of nonstationary quasi-periodic pulsations (QPPs) in high-energy particles during the impulsive phase of an X4.8 flare on 2002 July 23 (SOL2002-07-23T00:35). The X4.8 flare was simultaneously measured by the Reuven Ramaty High Energy Solar Spectroscopic Imager, Nobeyama Radio Polarimeters, and Nobeyama Radioheliograph. The quasi-period of ∼50 ± 15 s, determined by the wavelet transform, is detected in the γ-ray line emission. Using the same method, a quasi-period of ∼90 ± 20 s is found in the γ-ray continuum, hard X-ray (HXR), and radio emissions during almost the same time. Our observations suggest that the flare QPPs should be associated with energetic ions and nonthermal electrons that are quasi-periodically accelerated by the repetitive magnetic reconnection. The different quasi-periods between the γ-ray line and continuum/HXR/radio emissions indicate an apparent difference in acceleration or propagation between energetic ions and nonthermal electrons of this solar flare.
Limited Stability of Multicomponent Brines on the Surface of Mars
Authors: Chevrier Vincent F. , Fitting Alec B. , Rivera-Valentín Edgard G.
Published: May 2022

The formation and stability of brines on the surface of present-day Mars remains an important question to resolve the astrobiological potential of the red planet. Although modeling and experimental work have constrained the processes controlling the stability of single-salt brines exhibiting low freezing temperatures, such as calcium perchlorate, the Martian regolith is far more complex because multiple salts coexist in various concentrations, leading to brines whose behavior remains untested. Here we modeled the stability of complex brines of compositions determined from the Phoenix lander’s Wet Chemistry Laboratory. We find that such brines would form in equilibrium with sodium and magnesium perchlorates, chlorides, and calcium chlorate, but never calcium perchlorate, which has been widely considered as the most likely to produce brines on Mars. Furthermore, we find that only chlorate-rich brines can potentially remain liquid, for small periods of time, at temperatures compatible with those measured by the Phoenix lander. Therefore, liquid brines remain overly unstable under present-day Martian conditions and are unlikely to contribute to surface geomorphological activity, such as recurring slope lineae. In these conditions, of cold and salty brines, the present-day Martian surface remains highly unhabitable.
Molecular data resolving the systematics of the related Blattellidae genera Symploce, Episymploce, and Blattella (Blattodea: Blaberoidea)
Authors: Jin Duting , Zhao Qiongyao , Han Wei , Li Jinxiang , Wang Zongqing , Che Yanli
Published: May 2022

Members of the morphologically and ecologically diverse Blattellidae provide a dilemma: their systematic assignment, whether morphologically similar or different, is uncertain. We pay special attention to several taxa: the morphologically similarEpisymploceBey-Bienko, 1950 andSymploceHebard, 1916, which were strongly disputed because of their extremely similar generic diagnosis in the past century, and one brachypterous species ofBlattellaCaudell, 1903, which can be easily distinguished from other macropterous members, but is at risk of being misassigned to other genera on the basis of morphological characters. We address the phylogeny of Blattellidae using DNA sequences (mitochondrial12S rRNA,16S rRNA,COII, nuclear28S rRNA, histoneH3) from a broad sample of taxa. A new genus (Centrocolumnagen. nov.) and four new species (Centrocolumna ericeasp. nov.,Symploce nigrasp. nov.,Symploce tubercularissp. nov.,Blattella foliolatasp. nov.) are established on the basis of morphological characters combined with the molecular data. The phylogenetic results indicate the relationships ((Episymploce+Blattella) +Centrocolumnagen. nov.) +Symploce. Furthermore, we delimited the taxonomic status of 12 new combinations, which involveCentrocolumnagen. nov.,Episymploce,Symploce, andBlattella.
Chapitre 1. La santé planétaire – personnes et planète – notre responsabilité éthique !
Authors: de Paul de Barchifontaine Christian
Published: May 2022

Comment l’Église catholique a-t-elle participé au débat sur les grands problèmes mondiaux liés à la santé, à l’écologie et aux changements climatiques ? L’Encyclique Laudato Si : prendre soin de la Maison Commune (2015) » éveille son attention, ses énergies et se joint à la grande communauté scientifique internationale pour discuter ensemble, en tant que partenaires, de la question écologique et de l’avenir de la vie sur la planète.
Life cycle and production potential of a traditionally eaten phloem-feeding planthopper (sakondry,Zanna tenebrosa) in Madagascar
Authors: Borgerson C. , Aardema M.L. , Monroe A. , Randriamanetsy J.M. , Borgerson J.B. , Razafindrapaoly B.N. , Fisher B.L.
Published: May 2022

Zanna tenebrosa (Hemiptera: Fulgoridae), a traditionally eaten phloem feeding planthopper known as sakondry, has received recent attention for its farming potential; these insects have been successfully cultivated on bean plants in remote, rural communities that depend on natural resources for their food security, without increasing the loss of local wild habitats. Yet production is currently limited by the lack of knowledge on the basic life history and ecology of this insect. This study examinedZ. tenebrosa’s: (1) life cycle; (2) growth curves under various rearing conditions; and (3) the potential of the insect for sustainable food production, considering its feed conversion ratio (FCR) and nutrient retention. TheZ. tenebrosa life cycle was characterised by five instars of nymphs, followed by adulthood. Managed, outdoor free-range populations appear to be the ideal rearing choice in rural settings; free-range insects were significantly heavier and had shorter life cycles than those reared in enclosures on plants or cuttings. Mortality was highest in during the fifth instar (when insects are harvested), and phloem needs are likely high.Z. tenebrosa’s feed conversion ratio (1.3) was significantly more efficient than other livestock and insect meats. Further, unlike traditional meats that return only a fraction of the edible nutrients they consume,Z. tenebrosa providedmore nutrients than the edible portion of their feed. Their calorie and protein retention were three to 15 times higher than other livestock or insect meats and eatingZ. tenebrosa provided two, five, and 16 times the amount of iron, zinc, and fat than the edible portion of its feed would have provided. To our knowledge, this is the first time such amplification has been found in an animal raised for its meat. Our findings indicate thatZ. tenebrosa has promise as a farmed insect, particularly for remote malnourished communities with little access to land or infrastructure.
Total fishmeal replacement by defattedHermetia illucens larvae meal in diets for gilthead seabream (Sparus aurata) juveniles
Authors: Moutinho S. , Oliva-Teles A. , Martínez-Llorens S. , Monroig Ó. , Peres H.
Published: May 2022

This work aimed to evaluate the digestibility of defattedHermetia illucens larvae meal (HM), and its effects as fishmeal (FM) replacement on growth performance, feed and nutrient utilisation, and whole-body composition of gilthead seabream (Sparus aurata) juveniles. To assess apparent digestibility coefficients (ADC) of defatted HM, a reference-diet (43% crude protein (CP); 17% crude lipid (CL)) and a test-diet, in which 30% of the reference diet was replaced with defatted HM, were formulated. To assess the effect of dietary FM replacement, four isonitrogenous (43% CP) and isolipid (18% CL) diets were formulated to include defatted HM at 0 (HM0), 15 (HM15), 30 (HM30), and 45% (HM45), replacing FM at 0, 22, 60, and 100%, respectively. Triplicate groups of fish (initial body weight of 32 g) were randomly assigned to the experimental diets and the growth trial lasted for 67 days. The digestibility trials were conducted in a digestibility system, and each diet was tested in triplicate. Protein, lipid, and energy digestibility of defatted HM were high (>74%). Replacement of FM by defatted HM did not compromise the ADC of protein and lipid, while ADC of dry matter and energy increased. Complete dietary replacement of FM by defatted HM had no negative effects on growth performance, feed efficiency, whole-body composition, and protein utilisation of gilthead seabream juveniles, establishing the potential of defatted HM as an alternative ingredient for aquafeeds.
Matrix-Valued hypergeometric Appell-Type polynomials
Authors: Hidan Muajebah , Bakhet Ahmed , Abd-Elmageed Hala , Abdalla Mohamed
Published: May 2022

In recent years, much attention has been paid to the role of special matrix polynomials of a real or complex variable in mathematical physics, especially in boundary value problems. In this article, we define a new type of matrix-valued polynomials, called the first Appell matrix polynomial of two complex variables. The properties of the newly definite matrix polynomial involving, generating matrix functions, recurrence relations, Rodrigues' type formula and integral representation are investigated. Further, relevant connections between the first Appell matrix polynomial and various matrix functions are reported. The current study may open the door for further investigations concerning the practical applications of matrix polynomials associated with a system of differential equations.
Optimization and evaluation of resveratrol amorphous solid dispersions with a novel polymeric system
Authors: Han Gangqi , Wang Bing , Jia Mengli , Ding Shuxin , Qiu Wenxuan , Mi Yuxuan , Mi Zhimei , Qin Yuhao , Zhu Wenxing , Liu Xinli , Li Wei
Published: May 2022

The preparation of amorphous solid dispersions using polymers is a commonly used formulation strategy for enhancing the solubility of poorly water-soluble drugs. However, a single polymer often does not bring significantly enhance the solubility or amorphous stability of a poorly water-soluble drug. We found an application of a unique and novel binary polymeric blend in the preparation of solid dispersions. The main purpose of this study is to optimize and evaluate resveratrol (Res) amorphous solid dispersions with a novel polymeric system of poly (vinyl pyrrolidone) (PVP) and carboxymethyl chitosan (CMCS). The influence of three different release factors, the ratio of CMCS to the polymer mixture (CMCS% = X1), the ratio of Res to the polymer mixture (Res% = X2) and the surfactant (Tween 80 = X3), on the characteristics of released Res at various times (Q5 and Q30) was investigated. The computer optimization and contour plots were used to predict the levels of the independent variables as X1 = 0.17, X2 = 0.10 and X3 = 2.94 for maximized responses of Q5 and Q30. Fourier transform infrared spectroscopy (FTIR) results revealed that each polymer formed hydrogen bonds with Res. The solid performance and physical stability of the optimized ternary dispersions were studied with scanning electron microscopy (SEM), powder X-ray diffraction (XRD), modulated differential scanning calorimetry (MDSC) and dissolution testing. SEM, XRD and MDSC analysis demonstrated that the Res was amorphous, and MDSC showed no evidence of phase separation during storage. Dissolution testing indicated a more than fourfold increase in the apparent solubility of the optimized ternary dispersions, which maintained high solubility after 90 days. In our research, we used CMCS as a new carrier in combination with PVP, which not only improved the in vitro dissolution of Res but also had better stability.
Peek screw displacement after PCL reconstruction: A radiographic red herring solved by MRI
Authors: Shyam Karthik , Bhari Thippeswamy Pushpa , Silvampatti Ramasamy Sundararajan , Shanmuganathan Rajasekaran
Published: May 2022

Posterior cruciate ligament (PCL) repair has been increasingly performed as opposed to conservative management of PCL tears, in order to protect against future osteoarthrosis and meniscal degeneration. Fixation of the graft to bone can be done with interference screws, of which those composed of a bioresorbable material such as polyetheretherketone (PEEK) are preferred, owing to their inertness, good fixation strength and superior MR imaging compatibility. However, PEEK screws (unlike titanium screws) are radiolucent, and can make accurate post-operative evaluation by radiographs challenging. This is the first reported case of loosening of PEEK screw post-PCL repair, which highlights the importance of MRI and potential pitfall of radiography in evaluating post-surgical ligament laxity.
Musical Performance Activities of Josef Zöhrer at the Ljubljana Philharmonic Society
Authors: Weiss Jernej
Published: May 2022

The article examines the musical performance activities of the pianist, teacher, conductor and music director Josef Zöhrer (1841–1916), one of the central figures of Ljubljana’s musical life in the second half of the nineteenth century and the early twentieth century, at the Ljubljana Philharmonic Society. Over the course of almost half a century of performing and teaching Zöhrer had an enormous impact on musical culture in present-day Slovenia.
Cecilijanski cerkvenoglasbeni slogovni ideal v delih Antona Foersterja: med normativizmom in stvarnostjo poustvarjalne prakse
Authors: Nagode Aleš
Published: May 2022

Članek obravnava, kako je bil cecilijanski slogovni ideal večglasne cerkvene glasbe sprejet na Slovenskem. Kratko predstavi njegove značilnosti in kot vzorčni primer opazuje njegovo uveljavitev v ustvarjalnosti osrednje glasbeniške avtoritete slovenske veje tega gibanja, Antona Foersterja (1837–1926).
Rudolf Wagner v Mariboru
Authors: Ivec Anja
Published: May 2022

Glasbenik nemškega rodu, Rudolf Wagner (1851–1915), je ena ključnih osebnosti mariborske glasbene zgodovine druge polovice 19. stoletja in v prvih dveh desetletjih 20. stoletja. Pričujoči prispevek razkriva njegovo vsestransko aktivnost na glasbenem področju, prinaša oris njegove življenjske poti s pomembnejšimi prelomnicami in osrednjo pozornost namenja njegovi vpetosti v mariborski kulturni milje.
Umetniško udejstvovanje sopranistke Milke Gerbič v slovenskem prostoru
Authors: Bohak Adam Tina
Published: May 2022

Sopranistka Milka Gerbič sodi med najpomembnejše slovenske operne in koncertne poustvarjalke 19. stoletja. Kot profesionalno šolana pevka je imela ključno vlogo pri postavljanju temeljev slovenskega gledališča in je s svojo vsestransko osebnostjo pustila viden pečat v slovenski glasbeni kulturi. Prispevek predstavlja prvo poglobljeno študijo o njenem umetniškem udejstvovanju v slovenskem prostoru.
The Effectiveness of Listening and Speaking Activities in Developing Students' Communicative Competence When Learning a Foreign Language
Authors: Pavlovskaya Olga , Nepshekueva Tamara , Kravchenko Elena , Minakova Polina
Published: May 2022

The purpose of the study is to assess students` level of communicative competencies when learning a foreign language on the basis of which to substantiate the effectiveness of listening and speaking activities in the development of students' communicative competencies when learning a foreign language. The survey was based on teachers and students of Far Eastern Federal University (Russia) were surveyed; there were thirty-five university teachers and 240 first- and second-year students aged 18-20 took. The results of the study showed that students have difficulty in speaking, which necessitates the introduction of effective listening and speaking practices into the curriculum. The results also were based on the fact that teachers confirmed poor communicative skills of students and outlined various speaking activities in the study of a foreign language, which can contribute to the development of students' communicative competencies. The experimental stage of the study focused on the implementation of the pedagogical model showed that in the experimental group there was a rapid decrease in the number of students with the low level of competencies (from 25.25% to 11.62%) and an increase in the number of students with the high (up to 36.87%) and average (up to 51.52%) levels of competencies. Practical significance of the study is explained by the ability to use the developed tests to determine the level of students' communication skills, and the developed program can be used to develop and improve listening and speaking skills. The prospects for further research can be based on the opportunity to define the role of psychological and pedagogical disciplines in the formation of students' communicative competencies, develop scientific and methodological support for the formation of communicative competencies in the course of studying special disciplines.
Dire le soldat dans les actes du duc de Savoie aux XVIe et XVIIe siècles
Authors: Alerini Julien
Published: May 2022

À travers l’étude lexicométrique des textes normatifs des ducs de Savoie (1559-1630), nous analysons la représentation que cet État se fait des militaires. Nous montrons qu’il crée une identité militaire intimement liée à l’idée d’ordre et de désordre, et que ces textes ne donnent pas de définition officielle et normative du militaire. Ils sont performatifs et définissent le soldat par sa capacité, non pas à faire la guerre, mais à s’intégrer à la société, à constituer une institution ordonnée et réglée, à l’inverse des gens de guerre, qui de combattants deviennent des fauteurs de trouble. Cette étude montre les difficultés de l’État à penser les catégories du combattant et à encadrer la violence dont celui-ci est porteur.
Langue française et armée prussienne, une belle alliance ?
Authors: Étienne Élisabeth
Published: May 2022

Les rapports que l’armée prussienne a entretenus avec la langue française sont complexes. L’influence de cette langue fut prépondérante dès la naissance de cette armée par la présence de cadres militaires huguenots. Sous le règne du grand Frédéric, cette place fut confortée. Elle aurait put être contestée, lors de la naissance du nationalisme allemand, lorsque furent menées les guerres de libération contre l’hégémonie de la France napoléonienne, mais tel ne fut pas le cas. Cette place prépondérante perdurera jusqu’au début du xxe siècle. La réflexion théorique au sein de l’armée puise ses sources dans des ouvrages rédigés en français, Frédéric II, penseur militaire prolifique ne s’exprime que dans la langue de Voltaire. La langue technique est également placée sous l’influence de la terminologie française, que ce soit dans la désignation des grades, des éléments de la troupe, des règlements des différentes armes ou du vocabulaire tactique. Le paradoxe de cette situation réside dans le fait que l’un des grands principes du nationalisme allemand était d’affirmer la consubstantialité entre langue et nation et que l’armée, symbole du nationalisme, était loin de refléter cette exigence. Mais ce paradoxe est soluble dans l’histoire particulière de la Prusse.
Se dire militaire et ingénieur
Authors: Cuccoli Lorenzo
Published: May 2022

Cette contribution analyse le lien entre le processus de professionnalisation des ingénieurs géographes militaires français et les enjeux linguistiques qui le caractérisent. En effet, les termes utilisés pour qualifier ce groupe et ces individus, situés au croisement des figures de l’ingénieur, du géographe et de l’officier militaire, constituent un élément crucial de la définition, de la revendication ou de la disqualification d’une identité professionnelle individuelle et collective. Le statut des ingénieurs géographes demeure précaire et incertain tout au long du xviiie siècle. Longtemps en effet, ils ne furent pas considérés comme des officiers militaires à part entière, alors même que leur titre d’ingénieur était de plus en plus contesté. Leurs perspectives d’avancement restèrent d’autant plus limitées que leur précarité traduisait leur difficulté à constituer un véritable corps. Il fallut attendre la Révolution et le Consulat pour que débute un processus de professionnalisation sur le modèle des « corps savants », soutenu par une quête de légitimation tant militaire que scientifique, qui aboutit pendant l’Empire, avec la formation d’un corps d’état. Les atermoiements autour de leur désignation - usages des pluriels et des singuliers, généricité ou singularité des termes utilisés - témoignent de l’histoire mouvementée de la constitution et du statut du corps des ingénieurs géographes tout au long du xviiie siècle.
A conceptual problem for Stanford’s New Induction
Authors: Silva Bruno Malavolta e
Published: May 2022

The problem of unconceived alternatives (or the New Induction) states that, since scientists have recurrently failed to conceive relevant theoretical alternatives for some domains of science, current scientists are probably also failing to do so. Therefore, there may be theories which still exceed the grasp of scientists’ imagination, and one should not endorse a realist stance towards current science. In this paper, I raise a conceptual worry for the formulation of this problem: what does it mean to say that scientists failed to conceive a relevant theory? What aggravates the problem is that no simple notion of relevance makes the New Induction as strong as it initially seems. I consider the three more obvious interpretations of relevance: relevance as objective probability; relevance as epistemic probability assessed by current scientists; and relevance as epistemic probability assessed by past scientists. I argue that assuming any of these three notions implies difficulties for the New Induction, hence their proponents shouldn’t take the notion of relevance for granted. A more precise definition of relevance is essential to understand what are the difficulties surrounding the problem of unconceived alternatives as an epistemic worry. Until now, such notion is missing.
KeyWords: Scientific realism, unconceived alternatives, Kyle Stanford, New Induction, Pessimistic Induction.
Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices
Authors: Torky Mohamed , Chow T. Paul
Published: May 2022

We determine the effective critical breakdown field for 4H-SiC superjunction (SJ) devices and compare it to their conventional counterparts. Also, we investigate its dependence on SJ device structural parameters, such as drift layer thickness (t) and pillar width (W). In 4H-SiC SJ devices, the effective critical breakdown field was found to be around 30% lower than that of conventional devices owing to their longer ionization paths. In particular, the effective critical electric field varies as ξcr α t-1/10 and ξcr α t-1/6 for 4H-SiC SJ and conventional devices respectively but independent of pillar width and doping concentration for high aspect ratio devices (t/W > 10).
Impact of Device Design Parameters on 15 kV SiC MOSFETs
Authors: Sundaresan Siddarth , Park Jaehoon , Mulpuri Vamsi , Singh Ranbir
Published: May 2022

Experimental results from 15 kV-rated SiC DMOSFETs developed by GeneSiC Semiconductor are presented. A breakdown voltage of 16.7 kV is recorded, with < 200 nA leakage current at 15 kV. RDS,ON in the range of 4-5 Ω, 12-15 Ω or 50-75 Ω were measured on MOSFETs with chip sizes of 25 mm2, 16 mm2 and 9 mm2, respectively, with a lowest specific RDS,ON of 238 mΩ-cm2. The impact of MOSFET channel length and JFET width on the device performance is elucidated. Single-pulse avalanche energy = 22.1 J/cm2 and tAV=18.2 μs is achieved. VG-+20 V gate stress applied at 175°C showed good VTH stability with only a small 200-300 mV increase during the initial stages of the stress time.
A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs
Authors: Borghese Alessandro , Riccio Michele , Maresca Luca , Breglio Giovanni , Kicin Slavo , Irace Andrea
Published: May 2022

This paper presents a compact model implemented in SPICE environment for silicon carbide (SiC) MOSFET. The model is easily adjustable to devices belonging to different voltage and current ratings. A previous release of the model was tuned to match the performance of 1.2 kV and 3.3 kV SiC MOSFETs, while, in this contribution, an improved version of the compact model is calibrated for 1.7 kV devices. The agreement between the experimental and simulated data, achieved for both static and dynamic conditions, associated to the model simulation speed, emphasize its suitability as a tool for the simulation of converter containing wide arrangements of devices.
Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers
Authors: Cheng Qian Yu , Peng Hong Yu , Hu Shanshan , Chen Ze Yu , Liu Yafei , Raghothamachar Balaji , Dudley Michael
Published: May 2022

Understanding the depth from which contrast from dislocations is still discernible (the effective penetration depth of the X-rays) in grazing-incidence synchrotron monochromatic beam X-ray topography is of great interest as it enables three-dimensional dislocation configuration analysis and accurate density calculations. To this end, systematic analysis has been performed of topographic and ray-tracing simulated contrast of basal plane dislocations with different Burgers vector and line direction combinations, and a universal method to determine the effective penetration depth based on ray tracing has been developed. This study reveals that the observable dislocation contrast depends on the effective misorientation associated with the dislocation modulated by the photoelectric absorption effect. The dislocations with larger effective misorientation tend to have longer projected length and correspondingly deeper effective penetration depths.
Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC
Authors: Berger Clément , Alquier Daniel , Michaud Jean François
Published: May 2022

This work is focused on the fabrication of Titanium-based ohmic contacts by Laser Thermal Annealing (LTA) on n-type silicon carbide (4H-SiC). Their morphologies and electrical properties were studied by using two sets of parameters impacting the laser pulse overlap. With both sets, the ohmic contact transition was reached. The high overlap conditions produced a massive degradation of the contact morphology by leaving uncovered SiC. An optimisation of the annealing parameters was successfully performed by reducing the overlap. With the low overlap configuration, a specific contact resistance of 1.2×10-4 Ω.cm2 was measured for a fluence of 4.25 J.cm-2 with a satisfying contact surface morphology.
A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium
Authors: Renz A. Benjamin , Vavasour Oliver James , Rommel Mathias , Baker G.W.C. , Gammon Peter Michael , Dai Tian Xiang , Li Fan , Antoniou Marina , Mawby Philip  Andrew , Shah Vishal Ajit
Published: May 2022

A systematic germanium (Ge) and vanadium (V) study on 4H-SiC epitaxial layers is presented. Electrical results of TLM structures which were fabricated on these layers revealed that highly-doped Ge and V-implanted layers showed extremely low specific contact resistivity, down to 2 x 10-7 Ω.cm2. Current flow in the conducting state of Schottky barrier diodes has been successfully suppressed in some implanted layers, with highly V doped samples showing current density values of approximately 1 x 10-5 Acm-2 at 10 V. DLTS spectra reveal the presence of germanium and vanadium centers in the respective samples as well as novel peaks which are likely related to the formation of a novel GeN center.
Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology
Authors: Domeij Martin , Franchi Jimmy , Maslougkas Sotirios , Moens Peter , Lettens Jan , Choi Jake , Allerstam Fredrik
Published: May 2022

Similar charge to failure distributions with mean values of about 50 C/cm2 were measured for planar SiC MOSFETs and MOS capacitors. Fast occurring and saturating negative flatband and threshold voltage drops were found in time resolved 1 second long pulsed gate current stress with IG=1 mA/cm2 at T=150 °C. No substantial difference in VTH drift rate with VGS=28 V at T=150 °C was found after about 10 s recovery period for IG stressed devices compared with unstressed devices. Additionally, IG stressed and unstressed devices did not differ in final VTH shift at T=25 °C after VGS=28 V stress (during 3 hrs or 31 hrs). More gate oxide reliability characterization is important to determine if 1 mA/cm2 pulsed gate current stress creates any permanent changes to the SiC MOSFET device behaviour. Additionally, parametric shifts in VTH and RDSon was examined after long-term AC gate bias stress by a gate driver switching between-8V and 20V for four different commercially available SiC MOSFETs.
Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment
Authors: Renz A. Benjamin , Vavasour Oliver James , Pérez-Tomás Amador , Cao Qinze , Shah Vishal Ajit , Bonyadi Yeganeh , Pathirana Vasantha , Trajkovic Tanya , Baker G.W.C. , Mawby Philip  Andrew , Gammon Peter Michael
Published: May 2022

A systematic study is presented into the impact of a P2O5 surface passivation treatment, carried out prior to the deposition of a high refactory metal contact to 3.3 kV JBS diodes. Electrical results from Mo, W and Nb diodes reveal that those diodes that undergo the treatment have a major leakage current reduction, most significantly by 3.5 orders of magnitude to 1.5×10-6 A.cm-2 for treated W diodes. When applied to fully optimized 3.3 kV Mo/SiC JBS diodes, the P2O5 surface passivation treatment reduces the apparent barrier height, as well as the leakage current. SIMS analysis reveals that during the treatment, phosphorous diffuses into the top 10 nm of the SiC, achieving a peak density of 1019 cm-3, while XPS results suggest some of this diffuses into the contact metal during the contact anneal, altering the SBH. TCAD simulations help give more insight into band diagram changes at the Schottky interface, where the partial activation of the phosphorous ions is shown to alter the Schottky barrier, promoting a thermionic field emission conduction, effectively lowering the barrier height at the interface in Mo/4H-SiC diodes.
3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations
Authors: Ferro Gabriel , Yeghoyan Taguhi , Cauwet François , Coindeau Stéphane , Encinas Thierry , Soulière Véronique
Published: May 2022

This work investigates the 3C-SiC heteroepitaxial growth on silicon substrates having a wide variety of orientations, i.e. (100) on axis and 2°off, (111), (110), (211), (311), (331), (510), (553) and (995). All the 3C-SiC layers were grown using the same two-step CVD process with a growth rate of 2 μm/h. According to X-ray diffraction characterizations, direct heteroepitaxy (layer having exactly the same orientation as the substrate) was successful on most of the Si substrates except for (110) one which was the only orientation leading to obvious polycrystalline deposit. Each layer led to a specific surface morphology, the smoothest being the ones grown on Si (100)2°off, and (995) substrates. None of these layers cracked upon cooling though those grown on Si (111), (211) and (553) substrates were highly bowed.
Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs
Authors: Matacena Ilaria , Maresca Luca , Riccio Michele , Irace Andrea , Breglio Giovanni , Daliento Santolo
Published: May 2022

SiC MOSFETs have already replace silicon-based device in power applications, even if some technological issues are still not solved. The most important of them is related to the complex traps distribution at SiC/SiO2 interface. Interface traps affect the overall device behavior, modifying channel mobility and introducing hysteresis. In this work experimental C-V and I-V curves are carried out on various commercial SiC MOSFET at different temperatures. The focus is the comparison of hysteresis arising in trench and planar SiC MOSFETs.
Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS Capacitors at 700 K
Authors: Kotamraju Siva , Vudumula Pavan
Published: May 2022

Comparison of C-V characteristics and interface trap distribution for 6H-SiC MOS capacitor with AlN and HfO2 as high-k dielectric are presented. It is observed that the transition from accumulation to inversion requires a small change in gate voltage for HfO2 compared to AlN. Furthermore, larger shift in flat band voltage with respect to frequency is observed in case of AlN. A larger change in capacitance with respect to voltage and flat band voltage shift with respect to frequency for AlN indicated a poor choice for MOS capacitor compared to HfO2.
Effective Method (Selective E-V-C Technique) to Screen out the BPDs that Cause Reliability Degradation
Authors: Takano Kazumi , Igarashi Yasuyuki
Published: May 2022

We propose the new practical and effective method, called Selective E-V-C (Expansion-Visualization-Contraction) technique, to screen out the basal plane dislocations (BPDs) which might cause the forward voltage degradation of SiC devices. Since the method can be adopted at the epi wafer receiving inspection process in early stage of production line, it may replace the very time-consuming so-called "burn-in" operation currently utilized in some device manufacturers.
Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field
Authors: Abed Ali Fatme , Avenas Yvan , Lefranc Pierre , Jeannin Pierre Olivier , Alawieh Hadi , Youssef Toni , Moussa Hassan
Published: May 2022

Compactness, efficiency, and light weight are the key topics in the design of power conversion systems for transportation applications. This demand is achievable by using wide band gap devices such as SiC devices, characterized by the high switching speed and low on-resistance. However, this trend imposes new challenges and the effect of parasitic elements of power package during switching transient becomes significant. Hence, new packaging solutions should be investigated for addressing this concern. This paper presents a new multichip power module architecture, where its design considering capacitive and inductive stray elements is carried out. Using Ansys Q3D Extractor, electromagnetic simulations are achieved to extract the inductive and capacitive parasitic element of one leg of a three-phase inverter.
Latest Advances in the Implementation and Characterization of High-K Gate Dielectrics in SiC Power MOSFETs
Authors: Knoll Lars , Alfieri Giovanni , Romano Gianpaolo , Mihaila Andrei , Arango Yulieth , Wehrle Moritz , Sundaramoorthy Vinoth , Wirths Stephan
Published: May 2022

Recently high-k gate dielectrics for SiC power MOSFETs attracted increasing research interest thanks to promising results related to improved specific channel resistances and threshold voltage stability. We investigated high-k gate stacks for 1.2kV and 3.3kV SiC power MOSFETs regarding on-state performance and stability during high temperature gate bias tests. Furthermore, we studied the high-k/SiC interface quality and the effect of burn-in pulses using SiC MOSCAPs. High-k SiC power MOSFETs show significant improvement in on-state performance and threshold voltage stability. We found that the burn-in pulses can be shorter for high-k gate dielectrics compared to SiO2-based devices.
Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms
Authors: Chen Ze Yu , Peng Hong Yu , Liu Yafei , Cheng Qian Yu , Hu Shanshan , Raghothamachar Balaji , Dudley Michael , Ghandi Reza , Kennerly Stacey , Thieberger Peter
Published: May 2022

4H-SiC wafers with 12 um epilayer were implanted at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy from 13 MeV up to 66 MeV. Lattice strains introduced by the implantation process were characterized in detail by synchrotron rocking curve X-ray topography (SXRCT) and reciprocal space maps (RSMs). It is observed that the strain levels correlate with the atomic mass and energy of acceleration of the dopant atoms.
A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion
Authors: Gay Xavier , Bay Norbert , Delahaye Franck , Hansen Stefan , Kuehnlein Holger H.
Published: May 2022

In this paper we present a novel tool layout for wet chemical processing of porous silicon carbide layers. The novel tool concept includes single side processing without edge exclusion. There is no need to contact the backside of the wafer. We show SEM cross sections of the porous layer made by different currents densities. With increased current density the porosity increases. After optimization of the process conditions, we achieve a layer thickness non-uniformity of 10%.
Multi-Layer High-K Gate Stack Materials for Low Dit 4H-SiC Based MOSFETs
Authors: Bera Lakshmi Kanta , Singh Navab , Chen Ze Yu , Ming Calvin Chua Hung , Chui King Jien , Singh Ravinder Pal , Sheng Yee Ye , Chung Surasit , Han K. Michael , Chong Ka Ren , Kwong Dim Lee
Published: May 2022

Metal-oxide-semiconductor capacitors with single and multi-layer high-K gate dielectrics on Si (0001) face of n-type 4H-SiC substrates have been investigated. Multi-layered nanolaminated gate-stack comprises alternating ultrathin (6nm) Al2O3 and HfO2. A 5nm thick interfacial silicon oxynitride is deposited prior to laminated films to investigate interface trap properties and tuning of flat band voltage. Total thickness of gate-stack films including interfacial layer is 55nm. The thermal stability of multi-layered nanolaminated film is investigated using XTEM. Localized crystallization of HfO2 is visible after RTA at 900°C while Al2O3 remains fully amorphous. Some of HfO2 grains have extended into Al2O3 layer but was not able to crossover. The measured accumulation capacitance of 55nm thick gate dielectric gives an effective dielectric constant value of 9.6 and an equivalent oxide thickness of 22nm from high-frequency capacitance-voltage measurements. A positive flat band voltage ( of 12.2V and 10.6V are observed from both single layer HfO2 and Al2O3 dielectrics, respectively due to presence of negatively charged oxygen interstitial defects generated during atomic layer deposition process. However, VFB shifted towards negative voltage-7.6V for multi-layered Al2O3/HfO2 stacks probably associated with positive Al and Hf interstitials at interface of Al2O3/HfO2. Ultrathin interfacial oxynitride films is effective to reduce Dit to 3×1011/eVcm2 and tuning of VFB. The breakdown field of stacked gate dielectric on 4H-SiC is 10.0 MV/cm.
Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts
Authors: Naydenov Kaloyan , Donato Nazareno , Udrea Florin , Mihaila Andrei , Romano Gianpaolo , Wirths Stephan , Knoll Lars
Published: May 2022

This work presents for the first time a comparative numerical study on the performance of planar 3.3 kV SiC MOSFETs during clamped and unclamped inductive switching for various cell layouts and pitches. It is demonstrated that despite its larger on-state losses, the atomic lattice layout (ALL) incurs smaller switching losses than the stripe and the circular designs for all examined cell pitches. Conversely, while the ALL does turn off earlier than the other layouts during UIS, the decrease in the peak lattice temperature that it brings is predicted to be marginal if just a single unit cell is considered.
Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology
Authors: Rahimo Munaf T. , Nistor Iulian , Green David
Published: May 2022

This paper presents a Singular Point Source MOS (S-MOS) cell concept suitable for SiC MOSFETs targeting low conduction losses, low switching losses and high robustness. The S-MOS concept differs from standard Planar or Trench MOS cells in the manner by which the total channel width per device area is determined. For the proof of concept and device electrical performance evaluation, the paper will provide 2D and 3D TCAD simulations results for 1200V SiC MOSFETs including the S-MOS and reference planar and trench structures.