bluuebunny/crossref_metadata_2025 huggingface dataset:
Military Nephrology: A Review of Cases 1985-2011
Authors: World MJ
Published: March 2013

Objective:

Evidence of the prevalence of renal pathology in military populations is rare, probably as a result of a traditionally cautious military medical attitude that limits applicants with evidence of renal disease joining the Armed Forces and the continued service of military personnel who develop this later. The aim of this paper is to provide the first comprehensive review of renal diseases in a British military population.

Methods:

An archive of out-patient consultations, discharge summaries and renal biopsies between 1985 and 2011 was reviewed. Cases were classified according to diagnosis providing a frequency distribution over this 26-year period. Serum creatinine concentration and demographic data permitted retrospective calculation of estimated glomerular filtration rate (eGFR) at presentation and follow-up. Calculation of an annualised rate of deterioration of eGFR (ml/min/1.73m2/y) was undertaken when there were at least four follow-up values. In those cases where there was a statistically significant negative correlation with time, the probability of deterioration of renal function according to diagnosis was calculated. Where numbers of patients with a given diagnosis were sufficient for statistical purposes, correlations were also attempted between initial eGFR and both initial mean arterial pressure (MAP) and initial proteinuria.

Results:

The most frequent condition was IgA nephropathy, present in 115/346 (33%) of cases. Follow-up data permitted analysis of change in eGFR in 50 of these and 11 (22%) deteriorated. In this condition, there were statistically significant negative correlations between initial eGFR and MAP (r= -0.35, p=0.0008) and proteinuria (r= -0.4, p=0.0006). Other conditions showing deterioration despite therapeutic interventions included adult polycystic kidney disease (15/22=68%) and membranous nephropathy (4/7=57%). Altogether, 8/13 (61%) conditions included cases where eGFR deteriorated and this was present in 40/161 (25%) individual cases.

Conclusions:

Cases of renal disease are discovered de novo in serving military personnel and, despite interventions to maintain renal function, a significant proportion deteriorate supporting the traditionally restrictive policy concerning applicants with evidence of renal disease.
Lower Limb Ischaemic Symptoms in the Young Patient: Popliteal Artery Entrapment
Authors: Roy S , Vohra R , Duddy M , Tiwari A
Published: March 2013

This case report describes a case of Popliteal Entrapment Syndrome causing unilateral ischaemic claudication symptoms in an otherwise healthy soldier. The condition is rare but is an important cause of exercise related leg pain; untreated it can progress to structural arterial damage requiring reconstruction. Early identification of such cases may allow less invasive treatment.
The Use Of Celox™Gauze as an Adjunct to Pelvic Packing in Otherwise Uncontrollable Pelvic Haemorrhage Secondary to Penetrating Trauma
Authors: Arul GS , Bowley DM , DiRusso S
Published: March 2013

Haemorrhage from severe pelvic fractures can be associated with significant mortality. Modern civilian trauma centres may manage these injuries with a combination of external pelvic fixation, extra-peritoneal packing and/or selective angiography; however, military patterns of wounding are different and deployed medical facilities may be resource constrained. We report two successful instances of pelvic packing using chitosan impregnated gauze (Celox™) when conventional surgical attempts at vascular control had failed. We conclude that pelvic packing should be considered early in patients with military pelvic trauma and major haemorrhage, as part of damage control surgery and that Celox™gauze may be a useful adjunct. In our cases, the Celox gauze was easily removed after 24-48 hours without significant bowel adhesions and did not leave a residual phelgmon (of exudate or gel) that may predispose to infection.
Sandhurst: Preparation for life as a GDMO
Authors: Moss Alexandra
Published: March 2013

The ten-week Professionally Qualified Officers (PQO) course has been running successfully for a number of years and focuses on the values of officership, leadership and command. This article compares the principals embodied in the “Sandhurst Ethos” and the General Medical Council’s “Duties of a Doctor” and examines how time spent undertaking the PQO course strengthens the professionalism of junior doctors whilst introducing them to military life.
Smoking prevalence amongst UK Armed Forces recruits: changes in behaviour after 3 years follow-up and factors affecting smoking behaviour
Authors: Bray Isabelle , Richardson P , Harrison K
Published: March 2013

Objectives

The purpose of this study was to investigate smoking prevalence of Tri-Service recruits, and changes in smoking behaviour at 3-year follow-up, by trade group and gender. Associations with educational attainment and deprivation were also assessed.

Methods

Analysis of a survey into the health behaviours of 10 531 recruits in 1998/1999. A follow-up 3 years later measured changes in behaviour. Correlation and multiple regression was used to investigate the relationship between smoking prevalence in each trade group and both educational attainment and deprivation, using Index of Multiple Deprivation 2004 (IMD 2004) scores.

Results

Army recruits exhibited a significantly higher smoking prevalence (45%) than Royal Navy recruits (34%) and Royal Air Force (RAF) recruits (31%). There were marked differences between smoking levels amongst officer cadets (12%, 20% and 10% in the Navy, Army and RAF, respectively) and other rank trade groups (24–56%), with the exception of the Marines (13%). At follow up, smoking had generally increased, and in some parts of the infantry had risen to 66%. There was a clear correlation between smoking at enlistment and both educational attainment (correlation coefficient=0.7, p<0.005) and deprivation score (correlation coefficient=0.8, p<0.005).

Conclusions

There were clear differences between Services, rank and trade groups in smoking prevalence at recruitment. Smoking levels increased in the 3 years after recruitment to the Armed Forces. Deprivation was more important than educational attainment in determining the smoking status of recruits.
Round Afghanistan with a fridge
Authors: Wild Gareth , Anderson D , Lund P
Published: March 2013

Introduction

This paper covers the contemporary deployment of blood products in the pre–hospital environment during extended field operations in Afghanistan. The equipment used was standard–issue to the British Armed Forces but used in a novel manner. The aim of this paper was to establish the reliability of the RCB42P blood bank and the concept of blood storage in the field during protracted vehicle-borne patrols.

Method

TempIT tag data was collected for five patrols and analysed. Ambient temperatures varied immensely from minus 5°C to plus 50°C. Mitigation measures were introduced to reduce the exposure of the blood bank to radiated and ambient heat.

Results

The blood bank is affected by radiated heat from the engine compartment on long journeys coupled with high ambient temperatures. However, this can be minimised by simple mitigation measures using insulation and passive cooling.

Conclusions

The RCB42P blood bank is a robust unit capable of enduring a considerable amount of physical abuse and extremes of temperature. It is suitable for the storage of blood products on protracted vehicle-borne patrols in high ambient temperatures if the mitigation measures outlined are employed.
Post-operative negative pressure pulmonary oedema in an athletic male
Authors: Stewart Sarah K , Johnston A McD
Published: March 2013

A case of post-operative negative pressure pulmonary oedema in a young, athletic male is reported. We discuss this rare but life-threatening condition and its aetiology, and review the published literature. Military health care providers need to be aware of this condition as young fit personnel may be at increased risk of developing negative pressure pulmonary oedema in the post-operative period.
Dynamic pressure testing for chronic exertional compartment syndrome in the UK military population
Authors: Dharm-Datta Shreshth , Minden D F , Rosell P A , Hill P F , Mistlin A , Etherington J
Published: March 2013

Objectives

Chronic exertional compartment syndrome is one of the main causes of exertional leg pain. Diagnosis is based on the history and intracompartmental muscle pressure testing during exercise prior to consideration of fasciotomy for treatment. We present the data gathered at Defence Medical Rehabilitation Centre Headley Court during the first year of a revised protocol on dynamic pressure testing from May 2007.

Methods

The exercise protocol involved exercising patients using a representative military task: the Combat Fitness Test with a 15 kg Bergen on a treadmill, set at 6.5 km/h with zero incline up to 15 min and if completed, a further 5 min at 7.5 km/h. Subjects informed us when the exertional leg pain was 7/10 on a visual analogue scale and were instructed to carry on till failure (pain 10/10) or till the test finished. Mean pressure during this time period (7/10 to 10/10) was calculated by computer.

Results

Over 1 year, we performed 151 intracompartmental pressure studies in 76 patients. 120 were successful in 68 patients, with 31 technical failures. All studies were performed in the anterior or deep posterior muscle compartments as these were the symptomatic compartments; no patients had symptoms in the lateral or superficial posterior compartments and these were not tested. There was only one complication with a posterior tibial artery puncture. In 119 compartment studies, the mean pressure was 97.8 mm Hg (SD 31.7). These data are normally distributed (Shapiro Wilk test, W=0.98 p=0.125).

Conclusions

Our data based on this exercise protocol are comparable with the few studies that record dynamic pressure during running-based exercise. There is no accepted diagnostic pressure or exercise protocol. Due to the uncertainty of diagnostic criteria, it is necessary to perform a study measuring dynamic pressures in normal asymptomatic subjects.
Operational medical force protection: the collective solution
Authors: Bonser C D , Fawcett J R
Published: March 2013

Disease and non-battle injury have historically caused greater morbidity and mortality than battle trauma during military operations, and continue to do so. As a countermeasure, medical force protection (Med FP) measures will assist in the maintenance of combat efficiency, reducing manpower wastage and the inherent consumption of medical, infrastructural and logistical resources at the tactical, operational and strategic levels. This paper considers recent improvements in provision and delivery of essential Med FP measures and outlines the effect and confounding factors associated with pragmatic Med FP delivery across the Task Force Helmand area of responsibility during Op HERRICK 11B-14A (January 2010–July 2011) in Afghanistan, with a particular focus on military environmental health assets.
Watertightness, cracking resistance, and self-healing of asphalt concrete used as a water barrier in dams
Authors: Zhang Yingbo , Höeg Kaare , Wang Weibiao , Zhu Yue
Published: March 2013

The coefficient of permeability of hydraulic asphalt concrete is in the range 10−8–10−10cm/s. Laboratory test results show that triaxial specimens in axial compression can undergo axial strains up to 18% without any significant increase in permeability until approaching the compressive strength. For temperatures between 5 and 20 °C and strain rates between 2 × 10−3%/s and 5 × 10−3%/s, conventional hydraulic asphalt concrete can tolerate 1%–3% tensile strains before cracking in direct tension tests and strains up to 3%–4% in bending. At 20 °C the tensile and bending strains at cracking are 2–4 times higher than those at 0 °C, and at −20 °C they are approximately 0.2% and 0.8%, respectively. Asphalt concrete possesses pronounced crack self-healing properties. In the experiments, the crack leakage rate dropped 1–4 orders of magnitude within a few hours and the cracked specimens regained 55% of the intact tensile strength after only 1 day of self-healing. In summary, the comprehensive series of laboratory tests documents that asphalt concrete has characteristics that make the material extremely well suited for use in impervious barriers in dams, and the test results reported herein can be of great use in barrier design.
A direct method for the synthesis of indolizine derivatives from easily available aromatic ketones, pyridines, and acrylonitrile derivatives
Authors: Cai Qun , Zhu Yan-Ping , Gao Yang , Sun Jing-Jing , Wu An-Xin
Published: March 2013

A concise and efficient strategy has been proposed to synthesize indolizine derivatives from easily available aryl or heteroaryl methyl ketones, pyridines, and acrylonitriles. The mechanistic pathway involved the integration of iodination, pyridinium ylide synthesis, and 1,3-dipolar cycloaddition. The protocols were found to be highly efficient in terms of high yields, operational simplicity, mild reaction conditions, and easy workup. This method has provided an important supplement for the synthesis of indolizine derivatives via a novel tandem synthesis.
ONLINE SCHEDULING AND PLACEMENT OF HARDWARE MODULES ON PARTIALLY DYNAMIC ARCHITECTURES
Authors: OUNI BOURAOUI , MTIBAA ABDELLATIF
Published: March 2013

New FPGA families can be reconfigured partially, meaning that only a certain portion of the chip area is reprogrammed. Partial reconfiguration makes possible to exchange function blocks on the FPGA and adapt it to a changing environment. It is used to have only a subset of necessary applications running on chip at each time, and replacing them by those needed. One of the challenging problems is the scheduling and the placement of modules on reconfigurable resources, this problem is called temporal placement. Several modules placement techniques have been introduced in the literature to solve the temporal placement problem. In this paper, we examine the temporal placement, showing how it can be decomposed into a number of distinct but not independent subtasks. Furthermore, in this paper, we have classified the temporal placement algorithms into the following classes:

(1) Algorithms without design optimization

(2) Routing cost optimization algorithms

(3) Reconfiguration time optimization algorithms

(4) Modules interfering optimization algorithms

(5) Device resources optimization algorithms

After that, experiments are conducted in order to evaluate the complexity and performances in term of traditional design metrics, like latency, area, etc., of each algorithm.
CONIFOLD TRANSITIONS FOR COMPLETE INTERSECTION CALABI–YAU THREEFOLDS IN PRODUCTS OF PROJECTIVE SPACES
Authors: XU JINXING
Published: March 2013

We prove that a generic complete intersection Calabi–Yau threefold defined by sections of ample line bundles on a product of projective spaces admits a conifold transition to a connected sum of S3 × S3. In this manner, we obtain complex structures with trivial canonical bundles on some connected sums of S3 × S3. This construction is an analogue of that made by Friedman, Lu and Tian who used quintics in ℙ4.
BUSINESS MODEL INNOVATIONS FOR ELECTRIC MOBILITY — WHAT CAN BE LEARNED FROM EXISTING BUSINESS MODEL PATTERNS?
Authors: ABDELKAFI NIZAR , MAKHOTIN SERGIY , POSSELT THORSTEN
Published: March 2013

The paper aims to generate systematically business model innovations in the field of electric mobility. It introduces a new framework, in which a business model denotes a value-focused concept with five value dimensions: value proposition, value communication, value creation, value delivery and value capture. The framework enables the classification of business model patterns, identified in the literature, according to five categories. The combination of patterns from different dimensions can lead to the systematic generation of business model innovations. But the number of business models that can result from pattern combinations can be overwhelming. Subsequently, the paper only evaluates the extent to which business model patterns that are not necessarily observed in the automotive sector can be useful for the field of electric mobility, and how they can be adapted to fit into the new context. We find that the transferability strongly depends on the actor's role in the system, if it is a manufacturer, supplier or service provider. More importantly, our analysis shows that some models such as product-to-service (e.g., car sharing service), already implemented in the automotive industry, will continue to be successful in the future because of their potential of increasing customer acceptance and technology diffusion. Many other business models — so far used in other sectors, but not in the automotive industry — may integrate the field of electric mobility. Razor and blades, own the undesirable concept, and leverage new influencers are all promising business models, if they can be fitted adequately to the new context induced by the new technology.
Are software engineering textbooks a thing of the past?
Authors: Alkadi Ghassan , Beaubouef Theresa
Published: March 2013

Computer science is a rapidly changing field with new tools and products introduced almost daily. The software developer, whether beginning student or seasoned professional, must not only have a good background on the fundamentals, but must also be able to keep up with the latest trends and techniques through research, education, and practice. This paper addresses this issue in terms of student learning, and discusses the issue of currency as it relates to student learning materials such as textbooks.
Sequential specification of time-aware stream processing applications
Authors: Geuns Stefan J. , Hausmans Joost P. H. M. , Bekooij Marco J. G.
Published: March 2013

Automatic parallelization of Nested Loop Programs (NLPs) is an attractive method to create embedded real-time stream processing applications for multi-core systems. However, the description and parallelization of applications with a time dependent functional behavior has not been considered in NLPs. In such a description, semantic information about time dependent behavior must be made available for the compiler, such that an optimized time independent implementation can be generated automatically.

This article introduces language constructs with temporal semantics to NLPs. Using these language constructs, time dependent applications can be specified and a corresponding data-driven implementation can be generated for use on a multi-core system. Despite that these time-aware language constructs can be data-dependent, the application remains functionally deterministic. Pipelining is exploited to increase the throughput of an application. The media access control (MAC) protocol of an IEEE 802.11p WLAN transceiver is used to illustrate the relevance and applicability of the introduced concepts.
(Invited) Direct Bonding Energy in Anhydrous Atmosphere
Authors: Fournel Frank , Continni Léonardo , Morales Christophe , Da Fonseca Jeremy , Moriceau H. , Martin Cocher Chloé , Rieutord François , Barthelemy Alexandre , Radu Ionut
Published: March 2013

Direct bonding energy is an important parameter for direct bonding applications as well as for mechanism elaboration. Thanks to its simplicity as well as for its simple result interpretation, double cantilever beam (DCB) under prescribed displacement is the most used technique to measure the direct bonding energy. But, as shown also in this study, measurement of Si/SiO2 or SiO2/SiO2 direct bonding in standard humid atmosphere is greatly impacted by water stress corrosion. To prevent this effect, bonding energies have been evaluated under anhydrous atmosphere with less than 0.2ppm of water in nitrogen. After the setup and methodology description of the bonding energy measurement without stress corrosion influence, the global classical Si/SiO2 and SiO2/SiO2 direct wafer bonding energy curves versus post-bonding annealing temperature are revisited. Moreover, by using various surface treatments prior to bonding, the bonding energy behavior according to post-bonding annealing can drastically change as for example with plasma surface activation treatment. But in contrary, silicon-silicon hydrophobic bonding energy seems not impacted by the measurement atmosphere. Such results will also be presented and discussed.
Strain Characterization of Directly Bonded Germanium-to-Silicon Substrates
Authors: Bennett Nick , Ferain Isabelle Pauline , McNally Patrick , Holl Susan , Colinge Cindy
Published: March 2013

Synchrotron X-Ray Topography (SXRT) has been performed on a germanium-silicon substrate fabricated by direct wafer bonding. SXRT allows for quantification of the stress at the bonded interface. This non-invasive techniques help assess the likelihood of defect nucleation induced by the bonding process. This study shows that the stress at the bonded interface is an order of magnitude lower than the level required to cause spontaneous nucleation of threading dislocations.
Electrical Conductivity of Direct Wafer-Bonded GaAs/GaAs Structures for Wafer-Bonded Tandem Solar Cells
Authors: Yeung King , Mc Kay Jeffrey , Roberts Christopher , Goorsky M. S.
Published: March 2013

Wafer bonding of GaAs using an ammonium sulfide (NH4)2S treatment is investigated for various structures. The effect of the wafer offcut angle on the electrical conductivity of III-V solar cell devices using n-GaAs/n-GaAs wafer-bonded structures is studied. High resolution x-ray diffraction is used to confirm the misorientation of the bonded samples. Additionally, we compare the electrical properties of epitaxially grown p-n junctions on GaAs to n-GaAs/p-GaAs wafer-bonded structures. High resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) are used to compare the interface morphology across the range of relative misorientations after a 600 {degree sign}C RTP. The ratio of well-bonded crystalline regions to amorphous oxide inclusions is consistent across all bonded samples, indicating that the degree of misorientation does not affect the level of interface recrystallization at high temperatures.
(Invited) Cu Surface Passivation with Self-Assembled Monolayer (SAM) and Its Application for Wafer Bonding at Moderately Low Temperature
Authors: Tan Chuan Seng , Lim Dau Fatt
Published: March 2013

In this paper, low temperature (<300 oC) thermo-compression bonding of bump-less Cu-Cu in the context of 3D IC application is discussed. The Cu surface degradation is overcome by the application of a self-assembled monolayer (SAM) of alkane-thiol as a temporary passivation layer. This method is potentially attractive as it is non-UHV and non-corrosive. With SAM passivation, surface oxidation and contamination are controlled and upon SAM desorption, a cleaner Cu surface is available for bonding at low temperature. SAM passivated Cu shows higher degree of interdiffusion and grain growth during bonding. This results in the enhancement of the physical properties of the Cu-Cu bond which is potentially suitable for 3D IC stacking.
Treatments of Deposited SiOx Surfaces Enabling Low Temperature Direct Bonding
Authors: Rauer Caroline , Moriceau H. , Fournel Frank , Charvet Anne-Marie , Morales Christophe , Rochat Névine , Vandroux Laurent , Rieutord François , McCormick Tina , Radu Ionut
Published: March 2013

The effect of several treatments such as CMP or plasma activation applied to deposited silicon oxide layer surfaces prior to direct bonding has been investigated. It is shown that these treatments have a direct impact on surface and near subsurface OH bond densities which greatly participate to bonding energy changes. Better understanding of mechanism is proposed even if some conditions still deserve more investigation.
Room Temperature Bonding of Polymer to Glass Wafers Using Surface Activated Bonding (SAB) Method
Authors: Matsumae Takashi , Nakano Masashi , Matsumoto Yoshiie , Suga Tadatomo
Published: March 2013

A new process for room temperature bonding of polymer to polymer and polymer to glass wafers was developed. The room temperature bonding of PEN (polyethylene naphthalate) -PEN, PET (polyethylene terephthalate) -PET, Kapton-PEN, Kapton-PET, PEN-Glass (non-alkali glass) and Kapton-Glass was performed by the modified SAB method. No void is observed at the bonding interface with the optimized condition and bonding interface is so strong that the failure occurred not at the bonded interface but rather in the bulk polymer.
Distortion Free Wafer Bonding Technology for Backside Illumination Image Sensors
Authors: Broekaart Marcel , Castex Arnaud , Landry Karine , Fontaniere Richard , Lagahe-Blanchard Chrystelle
Published: March 2013

Significant distortion can originate during the bonding process, resulting in overlay issues for final backside illumination image sensor wafer processing, impacting final wafer yield and device reliability. This paper presents a distortion free bonding process where the bonding initiation is controlled by low gas pressure. No external force is needed to initiate the bonding. The resulting overlay capability enables the backside illumination image sensor technical roadmap. In addition, a wafer shape analysis methodology developed for early distortion detection is discussed, allowing bonding process optimization and diagnostic for bonding rework.
Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit Masks
Authors: Fujita Yuji , Hayashi Shohei , Sakaike Kohei , Higashi Seiichiro
Published: March 2013

Lateral grain growth was induced by micro-thermal-plasma-jet (μ-TPJ) irradiation to amorphous silicon (a-Si) films through slit masks. From a high-speed camera observation, a-Si films were solid-phase crystallized and then a oval molten region stretched in a direction perpendicular to the scan direction was formed, followed by a lateral grain growth of 170 μm in length. Such a long growth distance was achieved due to the strong temperature gradient in molten Si formed by slit masks and the growth velocity reached as high as 1600 mm/s. By μ-TPJ irradiation to slit masks precisely aligned with a-Si strips with the width (W) of 1 ~ 10 μm, filtering effect was confirmed when W was below 2 μm. The maximum single-grain length of 100 μm which have low defects was achieved in Si strips.
Thick Single Grain Silicon Formation with Microsecond Green Laser Crystallization
Authors: Arslan Aslihan , Kahlert Hans-Jürgen , Oesterlin Peter , Mofrad Daniel T. , Ishihara Ryoichi , Beenakker Kees
Published: March 2013

625 nm thick a-Si layer was crystallized by using microsecond pulsed green laser with wavelength of 515 nm. At least 8 μm size grains were formed using location controlled single grain technique at room temperature. Energy density window for crystallization and ablation were compared for pulse durations of 300 ns, 1000 ns and 1200 ns.
Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation
Authors: Sakaike Kohei , Kobayashi Yoshitaka , Nakamura Shogo , Akazawa Muneki , Ikeda Mitsuhisa , Higashi Seiichiro
Published: March 2013

Layer transfer and simultaneous crystallization of amorphous Si (a-Si) films induced by near-infrared semiconductor-diode-laser (SDL) irradiation have been investigated. The a-Si films supported by columns on a starting substrate (quartz) and a counter substrate (glass and polyethylene terephthalate) were face-to-face contact, and an SDL irradiated the a-Si films. After SDL irradiation, the Si films of 6 × 6 mm2 area were completely transferred and crystallized simultaneously on the counter substrates. In-situ monitoring revealed that the layer transfer took place either in the solid phase or the liquid phase followed by phase transformation in the cooling period.
Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser
Authors: Ishihara Ryoichi , Zhang Jin , Trifunovic Miki , van der Zwan Michiel , Takagishi Hideyuki , Kawajiri Ryo , Shimoda Tatsuya , Beenakker C.I.M.
Published: March 2013

Solution process of silicon using liquid-Si is attractive for fabrication of high-speed flexible electronics. We have fabricated single-grain Si TFTs on location-controlled Si grains with long-pulse excimer laser crystallization of spin-coated liquid Si film. The maximum grain diameter is 3.5μm, and the mobilities for electrons and holes are 423cm2/Vs and 118cm2/Vs, respectively.
A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack
Authors: Furuta Mamoru , Kawaharamura Toshiyuki , Toda Tatsuya , Wang Dapeng
Published: March 2013

We fabricated a thin-film transistor (TFT) with an amorphous InGaZnO (a-IGZO) and aluminum oxide (AlOx) gate dielectric stack that was deposited by a solution-based atmospheric pressure chemical vapor deposition. Field effect mobility of 4.1 cm2•V-1•s-1 and on/off current ratio of over 108 were obtained. We also investigated the effects of an ozone (O3) surface treatment of gate dielectric on electrical properties of the IGZO TFTs. The O3 surface treatment of the AlOx gate dielectric reduced the maximum area density of states in the IGZO TFTs. Moreover, transfer curve hysteresis also decreased by applying the O3 surface treatment of the AlOx gate dielectric.
Dual In-Plane-Gate Thin-Film Transistors Gated by Chitosan on Paper Substrates
Authors: Wan Qing , Dou Wei
Published: March 2013

Dual-gate electrostatic modulation gives an attractive approach for transistors performance improvement and operation mode modulation, which is favorable for chemical sensor and logic applications. Here, self-aligned junctionless semiconducting oxide channels are dual-gate electrostatic modulated by solution-processed chitosan-based proton conductors on paper substrates. The low-voltage junctionless paper transistors can be effectively tuned from depletion mode to enhancement mode by a second in-plane gate. Such dual-gate organic/inorganic hybrid paper transistors are promising for portable paper electronics
Scanning Kelvin Probe Microscopy Study on Oxide Thin Film Transistor
Authors: Park J. -H. , Cha Hong-Gi
Published: March 2013

Thin film transistors (TFT) using oxide channel like InGaZnO are very promising for the transparent and flexible electronics application because of their high performance and optical transparency compared with amorphous silicon or organic semiconductors. In addition to the fundamental transport behaviors, the device reliability is very important and light or bias-dependent characteristics have been intensively studied. In terms of its very thin channel dimension, the surface and interface of the channel should be well understood to analyze and model oxide channel. We report our study on the characterization of oxide channel of TFT using surface-sensitive microscopic tool like scanning Kelvin probe microscopy (SKPM).
(Invited) All-Chemical Vapor Deposited Graphene/Silicon Nitride TFTs
Authors: Milne William I. , Cole Matthew , Drapeko Maksim , Kidambi P. , Ying Kai , Lee Sungsik , Pfaendler Sieglinde Marie Lousie , Teo K. B. K. , Hofmann Stephan , Nathan Arokia
Published: March 2013

All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through all-chemical vapor deposition processes.
Thin-Film Transistor Using Dielectrophoretic Assembly of Single-Walled Carbon Nanotubes
Authors: Toda Tatsuya , Kawaharamura Toshiyuki , Furusawa Hiroshi , Furuta Mamoru
Published: March 2013

A single-walled carbon nanotube thin-film transistor (SWNT TFT) was formed using aligned SWNT channels assembled by the dielectrophoretic (DEP) process. The density of assembled SWNTs was controlled by the DEP factors (concentration of SWNT solution and applied AC voltage). The on/off current ratio of the SWNT TFT was improved by decreasing the SWNT density in a channel, and it achieved 3.4×105. DEP assembly is an effective method to achieve well-aligned and density-controlled SWNT channels for TFT applications.
(Invited) Issues of Backplane Technologies for AMOLED
Authors: Lee Soo-Yeon , Lee Jeong-Soo , Han Min-Koo
Published: March 2013

We discuss the backplane technologies for the active matrix organic light emitting display (AMOLED) displays. We invest the merits and the issues of various TFTs, such as oxide-based TFTs and low temperature polycrystalline silicon (LTPS) TFTs, which are considered for the backplane of AMOLED display. We report the reliability of oxide-based TFTs under the gate bias stress combined with light illumination. The compensation circuit for the progressive emission driving and the simultaneous emission driving of LTPS TFT backplane is reported.
Nanocrystal Floating Gate Memory with Indium-Gallium-Zinc-Oxide Channel and Pt-Fe2O3 Core-Shell Nanocrystals
Authors: Lee Seung Chang , Hu Quanli , Lee Jin Yong , Baek Yoon-Jae , Lee Hyun Ho , Yoon Tae-Sik
Published: March 2013

A nanocrystal (NC) floating gate memory with Pt-Fe2O3 core-shell NCs embedded in IGZO channel and control dielectric layer (IGZO(80nm)/SiO2(30nm)) was fabricated. The high-performance IGZO channel was fabricated by rf magnetron sputtering at room temperature. The colloidal Pt-Fe2O3 NC layers were prepared by dip-coating and subsequent annealing. For the reference device, the field-effect electron mobility (μm) was measured to be 18.43 cm2 V-1 s-1 and the threshold voltage (Vth) was 5.38V. The mobility μm of the device with NCs was measured to be ~7.43 cm2 V-1 s-1 and the threshold voltage Vth was -1.19V. A threshold voltage shift up to 1.67V, at gate pulsing 20 V was achieved by the charging of high density NPs.
(Invited) Strain Engineering for Optical Gain in Germanium
Authors: El Kurdi Moustafa , de Kersauson Malo , Ghrib Abdelhamid , Prost M. , Sauvage Sébastien , Jakomin Roberto , Beaudoin Grégoire , Mauguin Olivia , Largeau Ludovic , Sagnes Isabelle , Ndong Gerald , Chaigneau Marc , Ossikovski Razvigor , Boucaud Philippe
Published: March 2013

Room temperature optical gain and lasing have been recently demonstrated in germanium. One key ingredient to obtain positive gain is to reduce the splitting between the conduction indirect and direct valleys by introducing tensile strain. We have investigated two distinct approaches to apply a large tensile strain in germanium. The first approach relies on the growth of germanium on InGaAs buffer templates. Biaxial tensile strains up to 0.8% have been achieved by this method. The second approach relies on stress transfer through silicon nitride layers. It offers the advantage of a full compatibility with CMOS processing. We have successfully fabricated tensile-strained photonic wires which exhibit optical gain under cw optical pumping.
High Extinction Ratio, Low Energy Ge Quantum Well Electro-Absorption Modulator with 23 GHz Bandwidth
Authors: Isella Giovanni , Chaisakul Papichaya , Marris-Morini Delphine , Saïd Rouifed Mohamed , Chrastina Daniel , Frigerio Jacopo , Le Roux Xavier , Edmond Samson , Coudevylle Jean-René , Vivien Laurent
Published: March 2013

An High speed Ge multiple quantum well (MQWs) electro-absorption (EA) modulator is reported. All the steps required for the device fabrication, from the epitaxial growth of high quality Ge MQWs by LEPECVD, to optical lithography , and eventually characterization are described in detail.
Electronic Band Structure and Effective Masses of Ge1-xSnx Alloys
Authors: Low Kain Lu , Yang Yue , Han Genquan , Fan Wei-Jun , Yeo Yee-Chia
Published: March 2013

The electronic band structures of Ge1-xSnx alloys for Sn composition varying from 0 to 20% were investigated using the Empirical Pseudopotential Method (EPM). By tuning the adjustable form factors of EPM, the band features which agree well with the reported experimental data were successfully reproduced. From the calculated band structures of Ge1-xSnx alloys along high symmetrical lines in the Brillouin Zone, the effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were derived by fitting the effective mass at different Sn compositions by a quadratic polynomial.
(Invited) MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic Devices
Authors: Harris James S , Lin Hai , Chen Robert , Huo Yijie , Fei Ed , Paik Seonghyun , Cho Seongjae , Kamins Ted
Published: March 2013

Strained Ge and GeSn are potentially direct bandgap Group IV materials suitable for photonic devices. We have grown both Ge and GeSn with controlled degrees of strain and GeSn/SiGeSn heterojunctions by low temperature MBE which demonstrate high quality and excellent optical properties, including stimulated emission. Gain calculations show that quantum wells of either strained Ge or GeSn that are direct bandgap provide gain comparable to III-V materials and will produce useful, low threshold lasers for on-chip optical communications
(Invited) Beyond Graphene: Synthesis of Epitaxial Silicene Sheets
Authors: Le Lay Guy , De Padova Paola , Resta Andrea , Bruhn Thomas , Vogt Patrick
Published: March 2013

Silicene, graphene's silicon cousin, has just been synthesized. Here, we review the genesis of this discovery, describe the present state of the art and draw perspectives for other two-dimensional nano-lattices and future applications.
(Invited) Non Planar Non Si CMOS - Challenges and Opportunities
Authors: Hobbs Chris , Ang Kah-Wee , Hill Richard , Ok Injo , Min Byoung-Gi , Franca Daniel , Stamper Harlan , Vivekanand Saikumar , Rodgers Martin , Gausepohl Steve , Kirsch Paul , Jammy Raj
Published: March 2013

High mobility materials (such as SiGe, Ge and III-V) are attractive replacements for the conventional Si channel material in future CMOS technology nodes (<11nm) to improve performance and reduce power. To control short channel effects at these aggressively scaled device geometries, non-planar multi-gate devices will be needed. Although progress has been made in high mobility non-planar devices with SiGe, Ge and III-V channel materials, significant integration challenges remain. In this paper, the opportunities of non-planar non-Si CMOS and the hetero-integration challenges of high mobility material epitaxy on Si are discussed.
Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation Through Al2O3
Authors: Zhang Rui , Huang Po-Chin , Lin Ju-Chin , Takenaka Mitsuru , Takagi Shinichi
Published: March 2013

The ultrathin GeOx/Ge interfaces formed on Ge (100) and (111) surfaces have been characterized using XPS. The oscillating behaviors of the Ge 1+ and the 2+ states on Ge (100) surfaces and the Ge 1+ and the 3+ states on Ge (111) surfaces are observed in period of ~0.3 and ~0.5 nm, respectively, during the post plasma oxidation of the Ge MOS interfaces. These phenomena strongly suggest an atomic layer-by-layer oxidation of GeOx/Ge interfaces on both Ge (100) and (111) surfaces.
(Invited) GOI Substrates: Fabrication and Characterization
Authors: Sakai Akira , Yamasaka Shuto , Kikkawa Jun , Takeuchi Shotaro , Nakamura Yoshiaki , Moriyama Yoshihiko , Tezuka Tsutomu , Izunome Koji
Published: March 2013

Wafer bonding is an attractive process to creat new structures and materials, alternative to conventional bulk-Si substrates, in the form of substrates for the advanced metal-oxide-semiconductor field effect transistors (MOSFETs). A germanium on insulator (GOI) substrate attracts much attention because it makes the best use of the higher carrier mobility advantages compared with Si, and is suitable to further downscaling of Ge MOSFET dimensions. However, careful consideration is given especially to the bonded interface between Ge and buried oxide, which should have a device grade quality. In this work, we fabricate GOI substrates by using a wafer bonding method. Atomic structures, chemistry, and electrical properties of the Ge/BOX interface are also characterized.
(Invited) Strained Nanoscaled Devices
Authors: Grützmacher Detlev , Zhao Qing-Tai , Richter Simon , Knoll Lars , Moers Juergen , Gerharz Julian , Mussler Gregor , Buca Dan , Mantl Siegfried
Published: March 2013

This paper presents different strategies to improve the energy efficiency of nanoscaled Si based devices. Processing and device characteristics of nanowire (NW), Ge quantum dot (QD) metal oxide semiconductor field-effect transistors (MOSFETs) as well as tunnel FETs are discussed. A comparison of NW array devices containing uniaxially strained wires fabricated with SiO2/poly and HfO2/TiN gate stack is presented. The high uniaxial strain along the NWs reduces the band gap energy by approximately 140 meV and enhances the electron mobility. The hole mobility may be enhanced by proper choice of NWs orientation. Ideal inverse subthreshold slopes of n- and p-channel devices of 60 mV/dec at room temperature and Ion/Ioff ratios up to 1010 were obtained. Based on same 3D architecture Si and SiGe Tunnel FET are fabricated. For TFETs relatively high on-currents and good slopes <80 mV/dec were obtained. The typical ambipolar behavior of TFETs could be greatly suppressed by the use of a SiGe source tunneling junction.
Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth
Authors: Matsumura Ryo , Tojo Yuki , Yokoyama Hiroyuki , Kurosawa Masashi , Sadoh Taizoh , Miyao Masanobu
Published: March 2013

Formation of laterally-graded single-crystal SiGe-on-insulator structures by rapid-melting-growth of a-SiGe is investigated. From micro-probe Raman scattering spectroscopy measurements, it is revealed that the Si concentration profiles in grown SiGe layers are significantly affected by the growth conditions and sample sizes. Based on the systematical analysis of the phenomena, effects of the growth rate on Si segregation kinetics in rapid-melting growth are clarified. These findings are expected to be useful to obtain epitaxial templates with laterally-variable lattice constants for 2-dimensional integration of various functional devices on an Si-platform.
(Invited) Ge Photodiodes for CMOS Photonics Optical Engines and Interconnects
Authors: Sahni S. , Masini G.
Published: March 2013

In this contribution the CMOS photonics technology developed and commercialized by Luxtera (LuxG) is reviewed with particular emphasis on the Ge integrated photodiodes. The advantages of integration and usage of standard CMOS foundry toolset/processes/practices are discussed with details of the newest 14Gbps (FDR) and 25Gbps (EDR) transceiver chips.
Advanced Ge-on-Si Telecommunication Receivers
Authors: Doerr Christopher R.
Published: March 2013

Ge can be deposited on Si to provide a photodetector at wavelengths where optical fiber has the lowest loss. These Ge-on-Si photodetectors can be used in Si photonic integrated circuits to make high-speed receivers and power monitors. We discuss the technology and give device examples.
(Invited) Coherent Manipulation of a Si/SiGe-based Singlet-Triplet Qubit
Authors: Croke Edward T. , Borselli Matthew G , Maune Brett M. , Huang Biqin , Ladd Thaddeus D. , Deelman Peter W. , Holabird Kevin S. , Kiselev Andrey A. , Alvarado-Rodriguez Ivan , Ross Richard S. , Schmitz Adele E. , Sokolich Marko , Hazard Thomas M. , Gyure Mark F. , Hunter Andrew T.
Published: March 2013

Electrically defined silicon-based qubits are expected to show improved quantum memory characteristics in comparison with GaAs-based devices due to reduced hyperfine interactions with nuclear spins. Silicon-based qubit devices have proved more challenging to build than their GaAs-based counterparts, but recently several groups have reported substantial progress in single-qubit initialization, measurement, and coherent operation. We report coherent control of electron spins in two coupled quantum dots in an undoped Si/SiGe heterostructure, forming two levels of a singlet-triplet qubit. We measure a nuclei-induced T2* of 365 {plus minus} 11 ns, an increase over similar measurements in GaAs-based quantum dots by nearly two orders of magnitude. This value for T2* is consistent with theoretical expectations for our estimated dot sizes and a natural abundance of 29Si.
(Invited) Ge1-xSnx Materials: Challenges and Applications
Authors: Loo Roger , Vincent Benjamin , Gencarelli Federica , Merckling Clement , Kumar Arul , Eneman Geert , Witters Liesbeth , Vandervorst Wilfried , Caymax Matty , Heyns Marc , Thean Aaron
Published: March 2013

Ge1-xSnx is receiving a growing interest in the semiconductor community as the material properties are interesting for both electrical and optical device applications. In this contribution we discuss the potential of Ge1-xSnx for future electrical device applications. Further, we will briefly review its fabrication by means of Chemical Vapor Deposition and discuss the structural material properties and its stability against thermal treatments.
Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn
Authors: Gencarelli Federica , Vincent Benjamin , Demeulemeester Jelle , Vantomme Andre , Moussa Alain , Franquet Alexis , Kumar Arul , Bender Hugo , Meersschaut Johan , Vandervorst Wilfried , Loo Roger , Caymax Matty , Temst Kristiaan , Heyns Marc
Published: March 2013

The crystalline properties of strained and strain-relaxed CVD-grown GeSn layers were investigated. A positive deviation from Vegard's law was determined, resulting in the extraction of a new experimental bowing parameter for GeSn: bGeSn = 0.041 Å (in excellent agreement with recent theoretical predictions). The GeSn critical thickness for strain relaxation as a function of Sn concentration was determined, resulting in significantly higher values than those predicted by equilibrium models. A composition-dependent strain relaxation mechanism was also found, with the formation of an increasing density of GeSn pyramidal islands in addition to misfit dislocations at lower Sn concentration.
(Invited) Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content
Authors: Zaima Shigeaki , Nakatsuka Osamu , Nakamura Marika , Takeuchi Wakana , Shimura Yosuke , Taoka Noriyuki
Published: March 2013

We have investigated the epitaxial growth of Ge1-xSnx layers with a high Sn content over 10% and their optical properties. We examined the growth of Ge1-xSnx epitaxial layers with Sn contents over 10% on Ge and InP substrates. We have achieved the epitaxial growth of a Ge1-xSnx layer with a 27%-Sn content which is much higher than a thermoequilibrium solid solubility of Sn in Ge. We have also revealed the Sn content dependence of the direct energy bandgap for Ge1-xSnx layers with wide Sn contents ranging from 5% to 27%.
Tunneling Field-Effect Transistor (TFET) with Novel Ge/In0.53Ga0.47As Tunneling Junction
Authors: Guo Pengfei , Yang Yue , Cheng Yuanbing , Han Genquan , Chia Ching Kean , Yeo Y. C.
Published: March 2013

In this work, high quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition (MOCVD) tool. The energy band alignment between the Ge layer and In0.53Ga0.47As was investigated using high-resolution x-ray photoelectron spectroscopy (XPS) and the valence band offset was determined to be 0.5 {plus minus} 0.1 eV. Therefore, Ge/In0.53Ga0.47As heterojunction has a staggered band alignment at the interface, which is a good candidate for the tunneling junction in tunneling field-effect transistor (TFET). Lateral TFET with in situ doped P+ Ge-source In0.53Ga0.47As-channel using a gate-last process was demonstrated for the first time.