(Invited) Leading-Edge Diamond FET, MEMS, and Photodetector Devices
Authors: Koide Yasuo 
Published: February 2024

Diamond is a candidate material for next-generation power electronics, micro-electro mechanical systems (MEMS), and solar-blind deep-ultraviolet (DUV) photodetector devices with excellent thermal stability and radiation hardness, which operate under extreme environment. In order to use an advantage of high-density hole channel of hydrogenated diamond (H-diamond) surface, we have developed the high-k stack gate dielectrics and AlN heterojuction gate for H-diamond FETs, such as HfO2/HfO2, LaAlO3/Al2O3 Ta2O5/Al2O3, and ZrO2/Al2O3, AlN/Al2O3 prepared by a combination of sputter-deposition (SD) and atomic layer deposition (ALD) techniques [1,2]. We also demonstrated the artificial diamond Fin-FETs with high-current level [3] and the nanolaminate insulator gate metal-oxide-gate FETs (MOSFETs) with k value as high as 100 [4], and the new transistor concept named by metal-insulator-metal-semiconductor field-effect transistor (MIMS-FET) to achieve normally-off operation by combining the advantages of MOSFET and metal-semiconductor FET [5]. In addition, we developed the routine ion-implantation process for preparing the diamond cantilever with a resonant frequency quality factor as high as one million [6,7]. We have also developed thermally stable Schottky barrier photodiode (SPD), metal-semiconductor-metal photodetector (MSMPD), and MSM-type SPD (IDF-SPD) with a large photoconductivity gain in DUV wavelength and a large discrimination ratio between DUV/visible light responsivity [8,9]. In this presentation, we will review the comprehensive our work on the diamond FET, MEMS, and photodetector devices.

Acknowledgements: This work was in collaboration with J-W. Liu, M. Imura, M-Y. Liao, J. Alvarez in NIMS and A. Ouchiero and E. Obaldia in University of Taxes, Dallas, and partly supported by JSPS KAKENHI Grant Number 20H00313.

References

[1] Liu, M-Y. Liao, M. Imura, A. Tanaka, H. Iwai, Y. Koide, “Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric,” Sci. Reports, vol. 4, 6395-1 (2014).

[2] Liu and Y. Koide, “An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors.” SENSORS, 18, No.6, 813 (2018).

[3] Liu, H. Ohsato, Bo Da, Y. Koide, "High Current Output Hydrogenated Diamond Triple-Gate MOSFETs," IEEE J. Electron Devices Society. 7, 561 (2019).

[4] Liu, O. Auciello, E. de Obaldia, B. Da, Y. Koide, “Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs,” Carbon. 172 112 (2021).

[5] Liao, L. Sang, T. Shimaoka, M. Imura, S. Koizumi, Y. Koide, "Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases," Advanced Electronic Materials. 5 [5] (2019).

[6] Liao, S. Hishita, E. Watanabe, S. Koizumi, Y. Koide, "Suspended single-crystal diamond nanowires for high-performance nanoelectro- mechanical switches." Adv. Mater. 22, 5393 (2010).

[7] Wu, L. Sang, T. Teraji, T. Li, K. Wu, M. Imura, J. You, Y. Koide, M. Liao, "Reducing energy dissipation and surface effect of diamond nanoelectromechanical resonators by annealing in oxygen ambient," Carbon. 124, 281 (2017).

[8] M. Liao, Y. Koide, and J. Alvarez, “Thermally Stable visible-blind Diamond Photodiode Using WC Schottky Contact,” Appl. Phys. Lett., 87, p. 0221051 (2005).

[9] Liao and Y. Koide, "High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film." Appl. Phys. Lett. 89, 113509 (2006).