bluuebunny/crossref_metadata_2025 huggingface dataset:
Infrared Reflectivity of N on N+ Si Wafers
Authors: Abe Toshio , Kato Taketoshi
Published: November 2005

A method is established to analyse numerically the infrared reflectivity of n on n+ Si wafer. This method has been based on the following two assumptions. a) A continuously varying stratified medium can be approximated as a pile of thin homogeneous layers. b) Complex refractive index of n type Si can be expressed by the classical dispersion theory. This method has been proved by the fact that the computed reflectivity of outdiffused Si wafer with known impurity distribution coincides well with the observed values. Computed reflectivity of n on n+ Si epitaxial wafers explains well various experimental results: e. g., the grown film thickness calculated from interference fringes with “dielectrics on metals” approximation is larger than the true value. This method can be used to detect an anomalous impurity diffusion in the epitaxial films near the substrate.
Some Observation on the Crystal Surfaces of Cubic Boron Nitride
Authors: Kudaka Katsuya , Konno Hiroshi , Matoba Toshio , Takahashi Shuichiro
Published: November 2005

Crystal surfaces of cubic boron nitride synthesized at 55 to 60 k bars an d 1600 to 1800°C and identified by X ray diffraction analysis, has been observed optically. Although cubic boron nitride has similar structure to diamond, it shows somewhat different aspect of crystal growth from diamond. The most dominant crystal face is (111). However it must be emphasized that (110) face prefers to appear more frequently than (100) face in cubic boron nitride in this experimental condition. The crystal growth of cubic boron nitride is by means of plane sheet growth on the (111) face as in diamond and two types of plane sheet growth are observed; one is the growth of various shapes of layers on (111) face and another the growth of triangular pyramids on (111) face.
The Doppler Effects of the Drifting Plasma in Semiconductors
Authors: Arizumi Tetsuya , Umeno Masayoshi , Iwai Sohachi
Published: November 2005

The Doppler effects of injected carriers of semiconductor are detected in microwave fields and applied to the measurement of the drift velocity of semiconductor plasma. The beat frequency (Δ
f) between incident and Doppler shifted microwave signals is theoretically shown to be given by Δ
f=(2v

d
/c

p
)f
0, where v

d
and c

p
are the drift velocity of injected carrier and the phase velocity of electromagnetic wave of frequency f
0 in a wave guide, respectively. This relation is verified experimentally by the observation of the Doppler signals in 35 G.c/s as well as by the measurement of the drift time between two tapered wave guides of 10 G.c/s.
The drift velocity of the injected carriers can be measured over a wide range of electric field strength. In lower electric field strengths the drift velocity is equal to the ambipolar drift velocity, but in high electric fields it deviates from the ambipolar velocity and finally saturates to a constant value.
An Electron Beam Technique for Visualization of Charge Distribution
Authors: Saito Hiroshi
Published: November 2005

An Electron-optical apparatus for visualizing the distribution of surface charge on a solid sample is described. By the deflection of electron beam which is scanned near the charge, a characteristic pattern corresponding to the charge distribution is obtained on a screen as a track of the end points of the beam. The tracks are analyzed theoretically from the interaction between electric charges and electron beams. Experiments are performed on various types of charge distributions. It is shown that the theoretical curves agree well with the observed tracks.
Gradual Increase of Coercive Field of X-Irradiated Rochelle Salt
Authors: Abe Ryuji
Published: November 2005

The ageing of x-irradiated rochelle salt was studied through the change of coercive field at very low frequencies. The increase of coercive field just after x-irradiation was almost independent of frequency. This result can be explained if it is assumed that the radiation-induced-defects decrease the domain wall velocity through a certain interaction between the wall and the defects. The coercive field gradually increased at room temperature for 3 or more weeks after x-irradiation. This phenomenon should be closely related with the Okada's observation in which two dimensional thin cavities were seen on crystallographic basic planes when the x-irradiated crystal had been annealed at 40°C for about 3 hours.
Choice of Collimators for Neutron Diffraction
Authors: Sakamoto Masanobu , Kunitomi Nobuhiko , Motohashi Haruhiko , Minakawa Nobuaki
Published: November 2005

The effect of the collimators on Bragg peaks was investigated experimentally, in order to obtain a high intensity and good resolution for neutron diffraction measurements of a powder sample The results snow that, in rather small scattering angle, the angular divergence of the second collimator must be larger than that of the first and the third collimator, because the focussing effect makes the second collimator insensitive to a width of diffracted neutrons.
Pole Face Windings in the Todai AG Electron Synchrotron
Authors: Huke Kazuo , Kawasaki Sunao
Published: November 2005

Pole face windings were applied to the Todai AG electron synchrotron to avoid an integral resonance line of betatron oscillations and increase the energy of accelerated electrons which would be lost at 98 MeV. Magnetic fields produced by the pole face windings were calculated by the use of a linear transformation and of an image method, and wee compared with the value measured to give good agreements. The locus of the frequency of the betatron oscillations in the stability pattern was also analysed when the pole face windings were applied, and was compared with experiments. With a rather small power supply, the electron energy of 135 MeV has been obtained.
Reversible Contraction of Fused-Silica Helix Balance Ascribed to the Rise of Temperature
Authors: Ishimura Hajime
Published: November 2005

Rise of temperature causes contraction of a fused-silica helix balance (displacement of its rest point) Δ
l/l and its decrease in sensitivity Δ
S/S. The measurement of each is shown to be about 1.4×10-4/deg at near room temperature. The drift of rest point between 0° and 450°C is also measured. These variations agree with the temperature coefficient of shear modulus of fused silica indicated in literature. Contrary to the generally accepted picture about the stability of fused-silica helix, these effects, when no constant temperature jacket is used, seriously affect the results of weighing. On the basis of quantitative experiments, the permissible limits of temperature variation and a method for controlling it are discussed.
Nuclear Magnetic Resonance Study of Molecular Motion in Polyethylene Crystal
Authors: Iwayanagi Shigeo , Miura Ikuko
Published: November 2005

An NMR (nuclear magnetic resonance) study is made on the α or crystalline dispersion of polyethylene which has been found viscoelastically between room temperature and its melting point. Narrowing of NMR absorption line, increase of the mobile fraction and anisotropy of the narrowing are observed in the temperature range of the α dispersion both on melt grown and solution grown specimens. This α narrowing is found to occur at higher temperatures (i.e. the relaxation time is longer) for specimen with thicker crystalline lamella and to be so anisotropic that it disappears when all the molecular axes are aligned parallel to the main magnetic field H
0. The experimental results indicate that the molecular motion underlying the crystalline dispersion is the large amplitude torsional oscillation of folded polyethylene chains.
Observation of a Non-Convective Instability in a Beam-Plasma System
Authors: Tamano Teruo
Published: November 2005

The interaction between a primary unmodulated beam of electrons and a plasma in a magnetic field was investigated experimentally. The non-convective instability, corresponding to the coupling of the slow space charge wave and the backward plasma wave, was observed and the start-oscillation condition was observed. The measured energy spectra show the presence of accelerated electrons of the beam besides decelerated ones.
Magnetoresistance Investigation of RIS-II Films
Authors: Kuwahara Kaizo , Humphrey Floyd B.
Published: November 2005

The magnetoresistance effect of RIS-II films of Permalloy was studied and the results were expressed as an empirical formula. This formula describes the hysteresis loops as well as torque measurements. A model composed of three layers was proposed for RIS-II films, and experimental results obtained by Wilts were explained. The validity of the model was supported by a drastic change in magnetic characteristics when the surface of RIS-II films was etched off slightly.
Magnetic Susceptibilities of Cubic UO2+x at High Temperature
Authors: Nasu Shōichi
Published: November 2005

Magnetic Susceptibilites of cubic UO2+x (x=0.003–0.248) were measured over the temperature range between 77°K and 1100°K. Susceptibilities of UO2 single crystals follow the Curie-Weiss law with a high value of the Weiss constant (-220°K). The phase boundaries between one phase (UO2+x) and two phases (UO2+x and U4O9-y) in helium atmosphere were obtained from the breaks in the inverse susceptibility-temperature relations of the intermediate oxides from UO2 up to U4O9. The susceptibility data of UO2 and U4O9 were discussed in terms of the ground state configuration f2 perturbed by the crystalline field, in connection with the results of neutron diffraction.
Gold-Induced Dislocation Loops in Silicon Crystals
Authors: Iizuka Takashi
Published: November 2005

The nature of dislocation loops formed by the diffusion of gold into crucible-grown and dislocation-free silicon crystals has been studied in some detail by X-ray diffraction topography and optical microscope. Four types of loops are observed. It is found that faulted loops with stacking fault are mast frequently formed. The faulted loop is considered to be a Frank sessile interstitial loop. Generation of the loop is found to be closely related to the distribution of pre-existing oxygen atoms, the concentration of the doped impurity and the grown-in dislocation density in the sample. It is concluded that the loop source is associated with oxygen precipitate, and the loop is believed to be formed by a process analogous to the Bardeen-Herring mechanism.
Ruby Crystals Grown by the Czochralski Technique
Authors: Maruyama Mitsuhiro
Published: November 2005

Ruby crystals were grown by the Czochralski technique by using an induction-heated iridium crucible in various atmospheres. The crystals are grown along directions of the a- and c-axes and of 60° from the c-axis. The crystal on the whole is free from residual stresses, in contrast to the remarkable and irregular stresses usually found in crystals grown by the Verneuil technique. Laser oscillation were observed in the pulled crystals.
Electron Diffraction at Low Temperature IV. Amorphous Films of Iron and Chromium Prepared by Low Temperature Condensation
Authors: Fujime Satoru
Published: November 2005

Films of iron and chromium were prepared at 4.2°K which show diffuse halo electron diffraction patterns characteristic of an amorphous state. In order to decide whether these films are in an amorphous state or consist of very fine crystallites, the radial distribution analysis was carried out for them. The results of analysis lead to the conclusion that the state of atomic aggregate of these films is certainly amorphous.
Changes of Refractivity and Nonlinear Optical Phenomena by Franz-Keldysh Effect of Silicon
Authors: Tomiyama Shunsuke , Ito Yoshitoshi
Published: November 2005

Results of measurements of the electric field induced changes in the optical refractivity (Franz-Keldysh effect) of silicon at 95°K are presented in this paper. Silicon samples were irradiated by fast neutron flux in a reactor to increase resistivity. The 1.15 µ line of a Ne-He laser was deflected by a prism of silicon and the change in the angle of deflection with electric field was measured by an infrared vidicon. The measured change in refractive index is 1.7×10-3 at the electric field intensity of 5×104V/cm. Separations of the effect due to the Franz-Keldysh effect from the temperature effect and the electrostriction are discussed. Nonlinear effects of the Franz-Keldysh effect by the electric fields of the optical frequencies are also discussed.
Effective Triaxial Anisotropy in Triple-Layered Thin Magnetic Films
Authors: Hayashi Nobuo
Published: November 2005

The properties of exchange-coupled composite films composed of three layers of uniaxial anisotropic ferromagnetics have been investigated. Triple-layered films of a Ni-Fe-Co (67–15–18 wt. %) alloy exhibiting predominant triaxial anisotropy have been prepared. Their magnetization characteristics have been measured both with a display device for critical magnetization curves and a torque magnetometer. Both measurements have shown the existence of an effective triaxial anisotropy expected from a previously developed theory which represents the deformation of the critical magnetization curves of multilayered thin films in terms of effective multiaxial anisotropies.
Measurement of Resistance by Means of Electron Beam –II–
Authors: Munakata Chusuke , Watanabe Hiroshi
Published: November 2005

Resistance of semiconductor materials was measured by using a focused electron beam. The experimental error was mainly due to the bulk electron voltaic effect in the material. To reduce the error, the surface of the specimen was sand-lapped. After the treatment the electron beam technique was successfully applied to semiconductor materials, within the error of a few per cent. Energy and current of the electron beam were in the range of 5 to 30 KeV and approximately 1 µA, respectively.
Blue and Green Luminescence Centers of Electroluminescent ZnS:Cu Phosphors
Authors: Kawashima Shigeru
Published: November 2005

Emission spectra, glow curves and infrared stimulation of electroluminescent ZnS:Cu phosphors were observed. In the emission at low temperatures, the green component is predominant in the low frequency electroluminescence, while the blue component is predominant in the photoluminescence and in the high frequency electroluminescence. The green component is also strong in intensities throughout the thermoluminescent process. The ration of the blue to green components in the stimulated emissions at low temperatures decreases with increasing the wavelength of the irradiating infrared. These results can be interpreted in terms of an energy model in which the Schön-Klasens and Lambe-Klick models are assumed for the green and blue luminescence centers, respectively.
Electron Microscopic Observation on Heat Oxidation of Vacuum-Deposited Aluminium Films
Authors: Suito Eiji , Shiojiri Makoto , Morikawa Hiroshi
Published: November 2005

It was found by electron microscopy that three kinds of oxides were formed on aluminium films by heat oxidation in air in addition to amorphous oxide forming a protective layer. They were morphologically different: (A) flower-like amorphous oxide, (B) plates of a single crystal of γ-Al2O3, and (C) dendrite crystals of γ-Al2O3. At 400°C type-A, at 500°C type-A and type-B, and at 600°C type-C as well as type-B were formed. They all appeared preferentially at grain boundaries of the aluminium films. It is supposed that surface irregularities of the metal play an important role in the formation of these oxides.
Scans in Measuring Wiener Spectra for Photographic Granularity
Authors: Doi Kunio
Published: November 2005

The Wiener spectrum obtained in one dimensional scanning method is proved theoretically to be given as an integral of the two dimensional Wiener spectrum along one spatial frequency axis perpendicular to the scanning direction. This relation is verified experimentally by studying the changes of the Wiener spectrum affected by slit widthes of a scanning aperture. The slit width along the scanning direction determines the frequency pass band of the Wiener spectrum, and the slit width perpendicular to the scanning direction determines the sectional area of two dimensional Wiener spectrum.
A new granularity factor (b·\varPhi
m
(ν)=c
o
n
s
t. for a given film) is suggested as an objective measure for the photographic granularity, where b is the slit width perpendicular to the scanning direction and \varPhi
m
(ν) is the Wiener spectrum at the spatial frequency ν. This simple formula similar to the Selwyn relation is confirmed theoretically and experimentally to be valid, when b is large enough.
Hall Effect in Chromium Telluride
Authors: Nogami Minoru
Published: November 2005

The Hall effect in chromium telluride is measured from room temperature to about 400°C with a-c sample current and d-c magnetic field. At room temperature the Hall voltage of chromium telluride seems to consist of a negative anomalous component which exhibits saturation against the intensity of the magnetic field, and a positive normal component which may be ascribed to hole conduction. Above the Curie temperature, the negative component seems proportional to the magnitude of paramagnetic magnetization and the normal component is still positive. But at higher temperatures the observed Hall voltage becomes almost constant against the temperature variation and the sign is negative. Measurements of the resistivity are also carried out at the same temperature range. It is metallic over the whole temperature region and seems to have no singularity except at the Curie point.
Epitaxial Growth of Germanium by the Hydrogen Reduction of GeI4
Authors: Iida Shinya
Published: November 2005

Epitaxial vapor growth of germanium from GeI4 with hydrogen and argon atmosphere was studied. Growth occurred only in hydrogen atmosphere. Vapor etching of substrate was observed at relatively large GeI4 mole fraction in the case of hydrogen and all the cases in argon. Growth conditions were investigated, with changing various growth parameters. It was observed that the growth rates were greatly influenced by the carrier gas flow rate as well as the mole fraction and the substrate temperature. It was concluded that the growth occurred by the hydrogen reduction of GeI4 and not by the disproportionation reaction of GeI2 formed by the decomposition of GeI4 in hydrogen.
On the Diffraction Loss of Optical Resonator
Authors: Hioki Ryuichi , Suzuki Takeomi
Published: November 2005

The oscillation characteristics are reported of a helium-neon laser equipped with a resonator which consists of two concave spherical reflectors with non-identical curvatures. Laser oscillations in resonator arrangements of the so-called high loss geometry are studied. The powers and the field patterns of the output beam are shown. An intuitive interpretation of the high loss in a confocal resonator is also given, and is compared with Fox and Li's treatment.
Studies of Surface States on Si Crystal by Pulsed Field Effect
Authors: Sawamoto Ken'ichi , Takahashi Minoru , Tomishima Hiroshi , Toyoda Hiroo
Published: November 2005

The surface states on n-type silicon crystal were studied by transverse pulsed field effects. The surface states were affected by chemical etching and thermal oxidation. Relatively stable surface states were obtained, when the surface was oxidized after the chemical etching with the mixture of HF and HNO3, even if the oxidation was performed at so low temperature as 200°C. The observed surface states also depended on light irradiation, and a marked change was focused particularly when monochromatic light with energy equal to the band gap of Si was irradiated.
An X-Ray Study on PbO-Nb2O5-TiO2 System
Authors: Koizumi Hideo
Published: November 2005

Ternary system PbO-Nb2O5-TiO2 was studied. Ceramic samples were prepared at 900°C and 1200°C in air, and analyzed by X-ray powder diffraction method. The phase diagrams for this system at the two sintering temperatures are constructed. The diagrams indicate that ternary compounds PbO-Nb2O5-TiO2 (PbNb2TiO8) and PbO-2Nb2O5-3TiO2 (PbNb4Ti3O17) exist, and that a pyrochlore type cubic compound phase extends from 3PbO-2Nb2O5 site toward TiO2-rich part of the system, covering a considerably wide region. Another single phase region near the TiO2 region has remained unidentified. The PbNb2TiO8 compound is found to be piezoelectric.
On Some Operating Features of Plasma Expansion Ion Source
Authors: Tawara Hiroyuki
Published: November 2005

In order to produce a well-focused high intensity ion beam, tests have been made on a plasma expansion ion source, in which the ion beam is extracted from the expanded plasma boundary formed in the plasma expansion electrode which is attached to the anode plate of the Duoplasmatron ion source. The effect of the plasma expansion electrode length on the ion beam focusing has been investigated. It is shown that the use of longer plasma expansion electrode results in obtaining well-focused high intensity ion beam. In such plasma expansion ion source, a 250 mA pulsed hydrogen ion beam with a half-angle divergence of 180 mrad has been obtained at an extraction voltage of 25 kV.
On the Interpretation of Multiple Reflections in Microwave Interferometers Used in Plasma Diagnostics
Authors: Lonngren K. E.
Published: November 2005

This paper analyzes the problem of the multiple reflections occurring when the two horns are present in the use of microwave interferometers for plasma diagnostics and shows that the interpretation of the density must be modified to include this effect.
Slight Deformation of Confocal Fabry-Perot Resonator
Authors: Ogura Hisanao , Yoshida Yasuo , Furuhama Yoji , Ikenoue Jun-ichi
Published: November 2005

A tilt deformation of a confocal Fabry-Perot resonator is treated by the use of a perturbation method in solving the resonant integral equation based on the interferometer picture. The tilt of the confocal mirrors is considered as the off-axial shift of mirrors along the spherical surfaces. The diffraction loss in the presence of the tilt deformation is computed numerically for some values of the Fresnel number and the deformation parameter. It is shown that the loss of a confocal resonator is not so sensitive to the tilt of the mirror as a plane resonator is. The diffraction losses of some modes of the guided wave beams calculated by Gouban et al. are again obtained as our specific case of no deformation, which can be compared favorably with theirs.
The Magnetohydrodynamic Inclined Slider Bearing
Authors: Chawla Sahib Singh
Published: November 2005

An analysis is presented for the magnetohydrodynamic inclined slider bearing with an azimuthal magnetic field. It is found that significant increase in load carrying capacity can be achieved. The results are in contrast to those of Elco and Eughes in the case of a tangential or transverse applied magnetic field.
The Effects of Additives and of Ambient Atmosphere during Heating on the Electrical Resistivity of Semiconducting BaTiO3
Authors: Ashida Toshio , Toyoda Hiroo
Published: November 2005

The effects of doping and firing atmosphere on the electrical resistivity of polycrystalline barium titanate were studied. For the firing in nitrogen flow, the resistivity fell down to 10 ohm-cm with 0.05 mole percent Dy2O3 addition and did not show any appreciable change for larger additions. The firing in oxygen flow brought about a resistivity minimum near 0.1 mole percent Dy2O3 addition. The grain growth was suppressed with the increase of Dy content and in oxygen flow. The small grain was easily oxidized to have a high resistivity, while the large grain subjected to surface oxidation showed a pronounced PTC effect. Additions of Mn-, Cu-, Bi- or Tl-oxide together with Dy2O3 served to increase the electric resistivity. The resistivity rise also depended on the firing atmosphere in the respectively characteristic ways.
Some Observations of Imperfections in ADP Single Crystals by X-Ray Diffraction Micrography
Authors: Yoshimatsu Mitsuru
Published: November 2005

Lattice defects in ADP single crystals made by the Ogawa technique are studied using the Lang method of X-ray diffraction micrography. Besides dislocations, two kinds of lattice defects are observed; one is strain extended in band shape near the surfaces and the other interfaces. The interface which is not parallel to the surfaces of parallel-sided crystals generates parallel fringes in traverse photographs which consist of two systems of hook-shaped Pendellösung fringes inside the crystals.
A New Slow Electron Diffraction Apparatus
Authors: Fujiwara Kunio , Hayakawa Kazunobu , Miyake Shizuo
Published: November 2005

A new slow electron diffraction apparatus of the display type was constructed. It enables
1) observations of diffraction patterns over a wide range of scattering angle from 0° to 130°
2) the continuous or intermittent change of glancing angle and azimuthal angle of the specimen to the incident beam during a pattern observation.
It uses a glass fluorescentscreen, and two metal grids for the post-acceleration of diffracted electrons. The grids and screen are coaxial cylinders in shape. The patterns are observed from the backside of the screen.
Applications of the Maréchal Method of Aberration Balancing I. Case of Reflectors
Authors: Asakura Toshimitsu , Nagai Shohei
Published: November 2005

The Maréchal method of aberration balancing is well known but it has only been studied from the theoretical point of view. The purpose of the present paper is to outline the method briefly and to apply it to spherical and parabolic reflectors. A relationship is derived expressing maximum permissible focal length as a function of field angle with the F-number as a parameter. Finally, the surface is determined in image space over which the Strehl definition is a maximum. This paper considers the third- and fifth-order aberrations so that the results developed are applicable for certain limited areas of field angles and F-numbers.
Excess Energy Measurement of Ion Beam from High Frequency Ion Source
Authors: Tsuchimoto Takashi
Published: November 2005

The excess energy of an ion beam from a high frequency ion source was measured by using a high frequency ion source with mesh grid. The ion source was operated using unusual electrical connections. The results suggest that the excess energy is due to the increase of plasma potential caused by energetic electrons. By the use of an electrical shielding screen, it is shown that the axial component of the electric field from the high frequency coil is only a fractional source of the excess energy.
Current Oscillations in CdS
Authors: Yamamoto Ryōichi
Published: November 2005

Some observatious of current oscillations in a photoconductive CdS crystal are reported. The crystal was divided into two regions of different resistivity by nonuniform illumination. Current-voltage characteristics, potential distributions and the dependence of current amplitude on the resistivities and lengths of the two regions were investigated.
Before the current oscillation, there is a voltage range where a stable current which surpasses saturations current in high resistivity region flows through the sample or the high resistivity region itself. Under the above mentioned voltage range, the current neither obeys Ohm's law nor saturates. After the oscillation occurs, the minima of the oscillating current just coincide with the saturation current in the high resistivity region.
The mechanism of this type of oscillations is qualitatively discussed on the basis of this non-saturation effect.
Negative Resistance Phenomena in the Forward Direction of Si PIN-Diodes
Authors: Shohno Katsufusa
Published: November 2005

The silicon pin-diode in which the width ofi-region is from 6 to 12 times the diffusion length shows negative resistance in the forward direction. The current in the forward direction can be interpreted as a mixture of the field-dominated currents and the diffusion-dominated currents. The negative resistance appears to be due to the transition from the diffusion current in a long pin-diode (off-state) to the diffusion current in a shot pin-diode (on-state). Theoretically, the decrease in the applied voltage in thei-region at the onset of the negative resistance is given byVB=2(kT/e)×[exp (W/2L)+W/2L], whereWis the width of thei-region andLis the ambipolar diffusion length. This expression agrees with the experimental result.
New Decoration Techniques for Revealing Antiparallel 180° Domains in BaTiO3
Authors: Sawada Akikatsu , Abe Ryuji
Published: November 2005

Domain structures in BaTiO3 crystals were observed by decorating the surface with Cd or PbCl2. Cd films were formed by evaporation only on the positive ends of c domain and on a-domains when the crystal had been pre-sensitized in AgNO3 solution. Fine crystals of PbCl2 were crystallized most densely on the negative ends of domains from a saturated solution of PbCl2 and the differences in the density of the fine crystals revealed the domain structures clearly.
The mechanisms of both decoration phenomena are not yet clear, but the PbCl2 decoration may be closely related to the mechanism of etching by hydrochloric acid of BaTiO3 crystals.
Electron Microscope Studies on the Development of Slip Bands on KCl Whiskers
Authors: Yoshida Kazuhiko
Published: November 2005

The development of slip bands on KCl whiskers made by Amelinckx's method has been investigated electron-microscopically using the replica method. Steep and discrete steps and moderate and homogeneous ones make groups of the width ranging from a few thousands Å to about one micron in the early stage of deformation, while a quasi-uniform distribution of slip bands is observed in the later stages. A cross slip mechanism seems to play important roles in the development of slip bands. The contribution of the stress field due to the alignment of screw dislocations for the cross slip is investigated. Cross slips over a long distance of about 10 microns observed at the top of Lüders bands, which propagate in the initial stage of deformation, are considered to be caused by the stress field due to these alignments.
Gate Controlled Si PIN-Structure
Authors: Shohno Katsufusa
Published: November 2005

Si pin-diodes with nearly intrinsic region have negative resistance in the forward direction when the ratio W/L is 6–12, where W is the width of i-region and L the ambipolar diffusion length. The threshold voltage V

T
for giving the negative resistance varies in the wide range from 1 to 200 V, strongly depending on the ratio W/L. It is found that the threshold voltage V

T
can be decreased by a gate on the i-region. The necessary condition to turn on the diode is that the gate current I

G
increases up to a threshold current I

T
for giving the negative resistance. By observing the transient behaviour of the gate current, two processes are found to occur succeedingly in the turn-on process. The first process is the increase of current due to the injection of carriers up to the threshold current acting as a trigger to turn on the diode. The second process brings whole the i-region to negative resistance by filling up the recombination centers from cathode to anode.
Observations of Lattice Images of Light Element Crystals by Means of an Electron Microscope
Authors: Komoda Tsutomu
Published: November 2005

Crystal lattice images of light element crystals such as aluminium and copper were observed with an electron microscope. Crystal films of optimum thicknesses were deposited epitaxially in a vacuum. Very high contrast images of aluminium lattice planes were observed at a thickness equal to a quarter of the extinction distance. Contrast attenuation of the image with increasing thickness is discussed in terms of the inelastically scattered electrons appearing at the background of the image. The effect of inclination of the lattice planes on the contrast of the image during observation due to the heavy electron bombardment is also discussed.
Photographic Photometry by Concave Grating Spectrograph
Authors: Kamiya Kogo
Published: November 2005

The method of Frerichs, which gives spectral lines formed by a concave grating with stepped intensities by using the “aperture restrictor”, was studied in detail and extended to wider spectral range. It was shown that the spectral intensity is not proportional to the width of illuminated area of the grating, that is, to the width of the rectangular aperture on the aperture restricting diaphragm. The relation between the area and the irradiance of spectral images was investigated. A small 20 cm concave grating spectrograph was constructed with an angle of incidence of 13°, and the spectrum with stepped intensities was taken in the extreme ultraviolet region. By analysing the results the characteristic curves of some photographic emulsions were obtained in this spectral range. At the same time the partial efficiency of the concave grating was checked by the photoelectric method.
Magnetic and Crystallographic Studies of Ferrimagnetic Garnets Containing Fluorine
Authors: Ichinose Noboru
Published: November 2005

Magnetic and crystallographic data are reported on the systems {Y3-x
Ca
x
}Fe5O12-x
F
x
and {Y3-x
Ca3x
}Fe5-x
M
x
O12-x
F
x
, where M=Sb or V. A single phase can be obtained for x up to 0.56 in the system {Y3-x
Ca
x
} Fe5O12-x
F
x
, and for x up to 0.55, 0.50 in the system {Y3-3x
Ca3x
}Fe5-x
M
x
O12-x
F
x
for M=Sb and V, respectively.
The spontaneous magnetic moments extrapolated to 0°K agree quantitatively with those calculated on the basis of the Néel model. From measurements of the Curie temperature, the magnitude of the Fe3+–F-–Fe3+ exchange interaction estimated from a modified molecular field theory is in fairly good agreement with that in FeF3. The ferrimagnetic resonance line width at X-band in the single phase region increases with F content, but the g-factor is almost constant.
Temperature Dependence of the Photoconductive Lifetime in n-Type Gallium Arsenide
Authors: Shiragfuji Junji
Published: November 2005

Temperature dependences of electron lifetimes in n-type GaAs of 0.05 to 0.3 Ωcm were investigated using measurements of photoconductivity and Hall effect in the temperature range from 350° to 100°K. The electron lifetime increased with decreasing temperature and showed saturation at low temperatures with a plateau at intermediate temperatures. Theoretical derivations of the electron lifetime were also carried out for two cases; one is the case in which there exists an acceptor-type recombination level besides a recombination level near the midgap and the other is the case in which there exist two hole-trapping levels besides a recombination level near the midgap. Experimental results were successfully explained by these models and six species of acceptors were found, the depths of which were 0.33, 0.2, 0.13, 0.085, 0.06, and 0.02 eV. The saturation of the electron lifetime at low temperatures could be attributed to recombination through the acceptor level. The electron capture cross sections of the acceptors were estimated.
Twin Structures Associated with Ordering in Evaporated Thin Films of Cu60Au40
Authors: Yamaguchi Sadae
Published: November 2005

Electron diffraction and microscopic observations were made on twin structures associated with ordering in single crystalline films of Cu50Au40 prepared by vacuum evaporation. Crystallographic relationships of the twinned region in the ordered phase were determined with respect to the disordered cubic phase. The twin plane was parallel to {101} of the tetragonal CuAu I. It was usually found in slowly cooled specimens that the twin plane was normal to the film surface, and thus the c-axis of CuAu I in the twin lamellae was lying in the film plane making an angle of about 2° with the principal axis of the original cubic phase. The results are discussed in comparison with the observations of previous workers.
Observation of Kink Bands in Oriented Polyethylene
Authors: Seto Tsuneo , Tajima Yoshiko
Published: November 2005

Kinking of fibrils in oriented polyethylene under stress was investigated and three kinds of kink band were found. They were studied with an optical and an electron microscope and by means of X-ray diffraction. From the relationship between the directions of the c-axis, the applied forces and the kink bands, two types of kinking are proposed. One is by crystalline slip along molecular chains accompanied by rotation of the c-axis and the other is by a mechanism similar to twinning induced by shear stress along the king boundary. The kink band formed by compression of an oriented plate along its fiber axis was always oriented in such a way that it appeared to be normal to the fiber axis in the flat surface of the plate and oblique to it in the lateral face. Thus it is suggested that grain boundaries play an important part in the formation of the kink band.
Propagation of Low-Frequency Waves in an Inhomogeneous Plasma Column
Authors: Tanaka Masatoshi
Published: November 2005

Propagation of low-frequency waves in a magnetized inhomogeneous plasma cylinder surrounded by a vacuum or a metallic surface is investigated. An orthogonality relation between the modes of a uniform plasma column provides a basis for the derivation of a normal mode expansion. By making use of this expansion a perturbation method is applied to estimate the effect of inhomogeneities of the system. Perturbed dispersion curves of a waveguide filled a plasma of a parabolic density distribution are given. It is shown that inhomogeneities of the plasma have little effect on the shear mode propagation.
Crystal Distortion in Sr(Fe1/2Ta1/2)O3 and Some of Its Solid Solutions
Authors: Nakagawa Takehiko , Nomura Shoichiro
Published: November 2005

The tetragonal-cubic transition was studied in Sr(Fe1/2Ta1/2)O3, together with its solid solutions with SrTiO3, Ba(Fe1/2Ta1/2)O3 and BaTiO3. At the transition temperature, the magnetic susceptibility and d.c. electrical resistivity showed small anomalies, whereas the dielectric constant did not. The tetragonal distortion in Sr(Fe1/2Ta1/2)O3 was found to be not ferroelectric but of the same type as in SrTiO3 below 110°K. The effective magnetic moment of the Fe3+ ion was found to be 5.5 µ
B
.
Preparation and Electrical Properties of Bi2Te3-Ge Alloys
Authors: Tamura Hiroshi
Published: November 2005

The phase diagram for the Bi2Te3-Ge system in the region of 0–6 atomic percent Ge was determined by thermal analysis, X-ray diffraction, and the study of crystal growth. The solubility limit of Ge in solid Bi2Te3was found to be about 0.3%, and the distribution coefficient to be about 0.1. Crystals containing various amounts of Ge up to the solubility limit were prepared by the Bridgman method. The electrical properties of Bi2Te3are not much affected by the addition of Ge, and hence Ge is regarded as practically inactive in Bi2Te3. The secondary solid solution of the Bi2Te3-Ge system, which contains more than 1.2% Ge, is ann-type semiconductor with a very high carrier concentration (of the order of 1020cm-3). The crystal growth study shows that most of Ge-doped specimens used in Bergmann's works were highly inhomogeneous.
Measurements of Focused Beam Intensity by a Double-Beam Maser
Authors: Takeuchi Nobuo , Shimoda Koichi , Ogawara Yoshiaki
Published: November 2005

The efficiency of an electrostatic focuser for the production of population inversion as a function of focuser voltage was experimentally studied and compared with theory. The measurement of the effective beam intensity below the threshold of maser oscillation was made possible by the use of another beam which supplied the additional beam of active molecules entering the cavity resonator. The threshold conditions and the amplitude characteristics in a double-beam ammonia maser were observed and compared with theory.
It is shown that the effective number of active molecules in the beam varies in proportion to V
4 when the focuser voltage V is low, and to V
2 when the voltage is high, in good agreement with the theoretical result. The theoretical evaluation of the number of focused active molecules in a wide range of the focuser voltage is confirmed so that the amplitude characteristics, the threshold condition, and the beam intensity below threshold can be calculated with sufficient accuracies.
Squeeze Films between Electrically Conducting Plates
Authors: Ramanaiah Gundala
Published: November 2005

Hydromagnetic squeeze films between electrically conducting plates have been investigated theoretically. In these investigations the problems of inflnitely long rectangular plates with an applied magnetic field parallel to the plates, and circular plates with an axial current have been considered. The relations between the time of approach and the film thickness have been derived. For rectangular plates, it has been shown that the squeezing in a short circuit system is slower than that in an open circuit system. In both systems the time of approach increases with the Hartmann number. For circular plates, it has been shown that the time of approach increases with applied electric currents. The time-height relation has been given for the case of a circular plate with a concentric hole in it.
Growth of InAs Whiskers in Wurtzite Structure
Authors: Takahashi Kiyoshi , Morizumi Toyosaka
Published: November 2005

InAs was evaporated onto glass substrates coated with Ag or Au films. Whiskers were grown while maintaining these substrates at 450°C. The crystal structure of the whiskers was determined to be of hexagonal wurtzite type by X-ray diffraction study. Lattice constants were a=4.27Å, and c=7.02Å. Conversion of hexagonal InAs to cubic was made by after-heating for 5 minutes at 800°C. The appearance of InAs whiskers is considered to be due to stacking faults in cubic (111) planes.
Dislocation Etch Pits and Phase Relationships in Dimolybdenum Carbide Single Crystals
Authors: Vahldiek F. W. , Mersol S. A. , Lynch C. T.
Published: November 2005

Hexahedral, triangular, and spiral etch pits were brought out on Mo2C single crystals by etching with dilute nitric acid. These etch pits were correlated with the hexagonal Mo2C structure and the veining substructure as found on all planes of the crystals. The total dislocation density on as-grown crystals was calculated to be 5×106 dislocations/cm2. Annealing at temperatures ranging from 1600° to 2200°C resulted in a concomitant increase in the number of etch pits present. This increase is associated with the polygonization of the veining substructure during annealing, the increasing dispersion of the veining and impurity precipitate particles within the Mo2C matrix, and the formation of Mo2C-MoC within the veins. After annealing at 2200°C, the total dislocation density increased to 1×108 dislocations/cm2. The transition from the veining to the band-type substructure during annealing at 2200°C and above is associated with the formation of the Mo-Mo2C eutectic and the Mo-MoC within the bands, as determined by electron microprobe and electron diffraction analyses.
Instruments for the Observation of Galactic X-Rays
Authors: Matsuoka Masaru
Published: November 2005

Three types of rocket-borne X-ray instruments were constructed; they consists of a scintillation counter, four proportional counters, and twenty-three GM counters respectively. The scintillation counter was used to observe isotropic X-rays in the energy ranges of 5∼10, 10∼15, 15∼20 and ≥20 KeV, and the proportional counters to observe the intensities of X-rays from several sources in the energy ranges of 2∼4, 4∼8 and 8∼16 KeV. The GM counters were perepared to observe the intensities of X-rays form several sources in the wavelength ranges of 2∼4, 4∼8 and 7∼11 Å. Their properties were tested by radioactive sources and were found to be suitable for analyzing the energy spectrum of galactic X-rays while rejecting charged particles. Two of the counter systems were used for the observations of X-rays, and the method of data analysis as well as some of the raw data are discribed.
Measurement of Fractional Metastable-State Population of Cr Ions in Ruby under Q-Switching Operation
Authors: Nakaya Toshizo
Published: November 2005

The degree of the decrease in the population of ground-state Cr ions in ruby brought about by optical pumping with Xe flash light has been measured as a function of time under Q-switching operation. The measurement has been made by observing the decrease in absorbing power of the ruby crystal for a probe light (Hg 5461Å), (γ), while Q-switching with a rotating prism or saturable absorber (Cryptocyanine). Observations of rapid change of (γ) due to the emission of giant pulse laser light have been carried out, with the very satisfactory results. At the occurrence of a giant pulse, the higher the initial value of (γ) is, the lower becomes the final value of (γ).
A New Method for Studying Kinetics of Ion Exchange with an Ion Exchanger
Authors: Fujita Nobufusa
Published: November 2005

ESR technique can be used for rate measurement in an ion exchange process, since the signal responds to the presence of paramagnetic ions in the ion exchanger. Employment of this method, which gives continuously the rate curve in situ, is illustrated by an example of measurements on rates of Cu++–Zn++ exchange with polystyrene-sulfonic acid cation exchange resin. The measurements were carried out at different concentration of CuSO4 and ZnSO4 solutions with resin beads of several particle diameters. Rate constants obtained show that the rate is controlled by both film diffusion and particle diffusion.
A Method for Evaluating the Cavity Loss and an Optimum Reflectivity of the Output Mirror in a Ruby Laser with an External Mirror
Authors: Ohtsuka Yoshihiro
Published: November 2005

Both the cavity loss and an optimum reflectivity of the output mirror were determined experimentally from a set of measurements of the laser energy output for different glass plates placed as attenuators inside the cavity. The internal cavity loss value and the optimum value of the reflectivity for the ruby used were 0.14±0.01 per pass and 0.73, respectively under the pumping of 1000 joules, with mirror spacing of 23.6 cm, and at fixed temperature of 13°C. This optimum reflectivity was in good agreement with the one obtained by the measurements of the energy output for different reflectivities of the output mirror.
Photocurrent and Thermal Release Time Studies of Uranium Dioxide
Authors: Iida Shoji
Published: November 2005

The photocurrent and thermal release time of trapped carriers in sintered uranium dioxide have been measured, mainly at room temperature. The peak positions of photocurrent spectra indicated that the characteristic energy level of uranium dioxide is about 2.0∼2.3 eV. This level was not affected by the O/U ratio; however energy levels having smaller values than about 1.0 eV were affected by the O/U ratio. The measurement of thermal release time of trapped carriers also indicated that the shallow energy levels were affected by the O/U ratio. Infrared absorption spectra between 2.8µ and 45µ showed no particular absorption band, using powdered-film specimens, because the illuminating light source was too weak.
On the Voltage Induced by an Electron Beam in a Bulk Semiconductor Crystal
Authors: Munakata Chusuke
Published: November 2005

It is known that a voltage is induced by an electron beam as well as a light beam in a semiconductor crystal bar in which the resistivity is inhomogeneous. In this paper the voltage induced by an electron beam is considered and equations for the induced voltage are theoretically derived on a one-dimensional model for three special cases: linear, periodic and abrupt resistivity-change. For the case of periodic resistivity-change, good agreement with experiment is obtaind: in n-type Ge bar the calculated and the observed values are 7.9 µV and 6 µV respectively under the conditions that the beam current, the energy of the electrons, the change of the resistivity and the periodic length are 2.5 mµA, 20 KeV, 1 Ωcm and about 0.024 cm, respectively.
Electron Microscopy of Thin Twins and Stacking Faults
Authors: Fujita Hiroshi , Kawasaki Yōzō
Published: November 2005

It is shown that complex patterns appearing in the electron microscopic images of thin twins are related to overlapping of two boundaries, bending of foils, and existence of lattice defects such as dislocations and successive stacking faults. Overlapping of distant stacking faults sometimes shows contrasts similar to those of thin twins. It is found to be possible to distinguish between them by using properties of those patterns.