bluuebunny/crossref_metadata_2025 huggingface dataset:
Measurement and Identification of Three Contributing Charge Terms in Negative Bias Temperature Instability
Authors: Mayberry Clay , Nguyen Duc D. , Kouhestani Camron , Kambour Kenneth E. , Hjalmarson Harold P. , Devine Roderick A.B.
Published: March 2013

The increase in the magnitude of the threshold voltage of a positive-channel metal oxide semiconductor (PMOS) under negative gate biasing (negative bias temperature instability) is attributed to the build-up of charge in the gate insulator. We have studied the charging and discharging of nitrided SiO2 gate insulator field effect transistors and through the use of pseudo-DC and pulsed stressing methods, have extracted, at least, three charging components. These components are (a) the charging of interface states at the semiconductor/insulator boundary, (b) dynamically recoverable positive charging in the "bulk" of the insulator, and (c) positive charging in the insulator, which can be "eliminated" only by application of a positive electric field across the insulator. It is proposed that the charge "elimination" in (c) arises via a charge neutralization process involving electron capture at switching traps, as opposed to de-trapping, and that this can be reversed by the application of a small negative field.
Aggressive SiGe Channel Gate Stack Scaling by Remote Oxygen Scavenging: Gate-First pFET Performance and Reliability
Authors: Frank Martin M. , Cartier Eduard A. , Ando Takashi , Bedell Stephen W. , Bruley John , Zhu Yu , Narayanan Vijay
Published: March 2013

We demonstrate that aggressive gate dielectric scaling in hafnium-based high-k/metal gate (HKMG) p-channel metal-oxide-semiconductor field-effect transistors (pFETs) with biaxially strained silicon germanium (SiGe) channels can be achieved in gate-first integration via remote interfacial SiO2 scavenging by metal-doped titanium nitride gates. We show that an inversion thickness (Tinv) of 0.86 nm can be reached, corresponding to an equivalent oxide thickness (EOT) of about 0.45-0.5 nm. We then provide a detailed study of interlayer-scaling-induced pFET threshold voltage increase and hole mobility reduction, and we establish an exponential interlayer thickness dependence of negative bias temperature instability (NBTI), resulting in shrinking reliability margins that will require gate stack optimization or reduced operating voltage. Previously shown to be effective for nFETs, our results demonstrate that remote oxygen scavenging is an attractive scaling option for dual-channel CMOS.
Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT
Authors: Tuokedaerhan Kamale , Tan Ruiqin , Kakushima Kuniyuki , Ahmet Parhat , Kataoka Yoshinori , Nishiyama Akira , Sugii Nobuyuki , Tsutsui Kazuo , Natori Kenji , Hattori Takeo , Iwai H.
Published: March 2013

Interface properties of La-silicate gate dielectrics with tungsten carbide gate electrode have been investigated. Utilizing multi-stacking of tungsten and carbon thin films, W2C has been realized with annealing at 750 oC for 20 minutes in N2 ambient. Improvements in interface properties have been observed with W2C gate electrode.
Band Lineup Issues Related with High-k/SiO2/Si Stack
Authors: Xiang Jinjuan , Wang Xiaolei , Li Tingting , Zhao Chao , Wang Wenwu , Li Junfeng , Liang Qingqing , Chen Dapeng , Ye Tianchun
Published: March 2013

Band lineups of high-k dielectrics such as atomic layer deposition (ALD) grown HfO2 and Al2O3 with different thicknesses on SiO2/Si stack are investigated by X-ray photoelectron spectroscopy (XPS). The band offsets at HfO2/SiO2, Al2O3/SiO2 and SiO2/Si interfaces are found to vary with physical thickness of high-k dielectric. Concepts of gap states and charge neutrality level (CNL) are employed to discuss band lineup of high-k/SiO2/Si stack. The observed XPS results are interpreted and attributed to lower CNLs of HfO2 and Al2O3 than SiO2/Si stack, indicating feasibility of gap state based theory in investigating band lineup of oxide/semiconductor and oxide/oxide heterojunctions.
(Invited) SiC MOS Interface States: Similarity and Dissimilarity from Silicon
Authors: Umeda Takahide , Kosugi Ryoji , Sakuma Y. , Satoh Yoshihiro , Okamoto H. , Harada Shinsuke , Ohshima Takeshi
Published: March 2013

We here discuss SiC MOS interface states based mainly on microscopic information given by electron spin resonance (ESR) spectroscopy. Despite structural similarities between Si-SiO2 and SiC-SiO2, SiC MOS interfaces exhibit some dissimilarities from Si MOS ones. One example is the presence of carbon-related defects at there. Resactions to hydrogen and nitrogen atoms are also quite different between the two interfaces. We present recent our findings on the behaviors of these atoms at SiC MOS interfaces.
Controlled Lateral Etching of Titanium Nitride in a CMOS Gate Structure Using DSP+
Authors: Foster John Clayton , Metzger Sven , Besser Paul
Published: March 2013

In this paper we will report the results of TiN metal gate recession using a dilute mixture of sulfuric acid, hydrogen peroxide and hydrofluoric acid known by the trade name DSP+
Effect of Erbium Silicide Crystallinity for Low Barrier Contact between Erbium Silicide and n-type Silicon
Authors: Tanaka Hiroaki , Teramoto Akinobu , Sugawa Shigetoshi , Ohmi Tadahiro
Published: March 2013

The electrical and physical properties of ErSix on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights and the crystallinity of ErSix depend on the Si surface orientation. And the ErSix crystallinity affects the work function of ErSix. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.
Challenges for the Semiconductor Industry in the 21st Century
Authors: Gargini Paolo A
Published: March 2013

The Semiconductor Industry has successfully continued to prosper for over 40 years relying on the planar CMOS process as its backbone after overcoming a multitude of challenges. Scaling has provided all along a path to cheaper, better and faster integrated circuits. In the past 10 years the CMOS process has introduced revolutionary new processes and structures like Strained Silicon, High-K/Metal Gate and Multigate transistors to overcome the fundamental limiting blocks reached by the silicon gate process. Fueled by research of the past decade, new and exciting materials and novel structures are planned to be introduced in CMOS technology in the next 10 years. Furthermore, the industry is on its way to another wafer size conversion and presently equipment capable of processing wafers of 450mm in diameter is under development.
(Invited) Si Crystal Growth from a Melt: The Secrets Behind the v/G Criterion
Authors: Vanhellemont Jan , Kamiyama Eiji , Sueoka Koji
Published: March 2013

The so called v/G criterion defines a critical value of the ratio of the pulling rate v over the thermal gradient G at the melt solid interface. For a ratio larger than this critical value, the crystal is vacancy-rich while for values below the critical value, the crystal is interstitial-rich. When the ratio is equal to the critical value, the crystal would be defect free or made of "perfect silicon". The expression for the critical ratio is analyzed and it is shown that thermal stress at the melt/solid interface and doping have an important effect. Furthermore, DFT calculations suggest that near the melt/solid interface the formation energy of the intrinsic point defects is lower than in the bulk. This would lead to thermal equilibrium concentrations of vacancies and self-interstitials that are considerably higher than in the bulk of the crystal.
(Invited) Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications
Authors: Bruno Elena , Scapellato Giorgia G. , Napolitani Enrico , Mirabella Salvatore , Boninelli Simona , La Magna Antonino , Mastromatteo Massimo , De Salvador Davide , Fortunato Guglielmo , Privitera Vittorio , Priolo Francesco
Published: March 2013

In this work we report two promising approaches to control dopant diffusion and promote dopant incorporation and electrical activation in Ge. The former is based on reducing the vacancy concentration, and hence the dopant diffusivity, by increasing the interstitial concentration through high-fluence O implant and the formation of stable GeO2 complexes. The other approach exploits the non equilibrium processes occurring under laser annealing, that lead to the incorporation (and electrical activation) of dopants to concentration levels much higher than those achievable by any other conventional technique; all the related phenomena occurring are hence studied in details.
(Invited) The Thermal Budget of Hydrogen-Related Donor Profiles: Diffusion-Limited Activation and Thermal Dissociation
Authors: Laven Johannes G. , Job Reinhart , Schulze Hans-Joachim , Niedernostheide Franz-Josef , Schustereder Werner , Frey Lothar
Published: March 2013

The impact of the thermal budget on hydrogen-related donor profiles in high purity silicon implanted with protons in the MeV energy range is investigated. The appearance of donor profiles is limited to the annealing temperature between 350 {degree sign}C and 500 {degree sign}C. The activation of doping profiles is limited by the diffusion of implanted hydrogen from the end-of-range region throughout the radiation-induced damage. This formation process of profiles is described by a diffusion model with an effective activation energy of 1.2 eV. The hydrogen-related donors are radiation-induced defect complexes decorated by hydrogen. The thermal stability of these donors is limited by dissociation. The deactivation of the doping is modeled by two hydrogen-related donor species with effective dissociation energies of 2.5 eV and 3 eV. The described formation and dissociation mechanisms define upper and lower limits of the post-implantation thermal budget, respectively, for sensible use of proton implantation doping in crystalline Silicon.
(Invited) Interface and Border Traps in Ge pMOSFETs
Authors: Fleetwood Dan M , Simoen Eddy , Francis Sarah A. , Zhang C. X. , Arora Rajan , Zhang Enxia , Schrimpf Ron D. , Galloway Ken F. , Mitard Jerome , Claeys C.
Published: March 2013

We have evaluated the effects of device processing and total-ionizing-dose (TID) radiation exposure on interface and border traps in Ge pMOSFETs. The defect density of these devices before and after TID irradiation is particularly sensitive to the number of Si monolayers at the substrate-to-dielectric interface and the halo doping conditions. These differences are reflected in the on-to-off current ratios, oxide- and interface-trap charge densities, and low-frequency noise exhibited by the devices. Lower halo implant doses are preferred over higher doses. An increase in the number of Si monolayers from five to eight improves the on-to-off current ratios and radiation response. The best overall performance in a radiation environment is observed for a process with eight Si overlayers and relatively low halo implant dose.
Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon
Authors: Kot Dawid , Mchedlidze Teimuraz , Kissinger Gudrun , von Ammon Wilfried
Published: March 2013

In this work, deep levels introduced by RTA and by subsequent anneals in n-type silicon were studied by deep level transient spectroscopy and by photoluminescence. After annealing at 650 {degree sign}C, centers related to rod-like defects appeared. Furthermore, signals related to thermal donors were found in a wide temperature range. New thermal donors were found even after annealing at temperatures above 900 {degree sign}C. The appearance of rod-like defects indicates that during cooling after RTA soak interstitials supersaturate. The appearance of rod-like defects is accompanied by a decrease of the thermal donor concentration
A Proposal of Schottky Barrier Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process
Authors: Tamura Yuta , Yoshihara Ryo , Kakushima Kuniyuki , Ahmet Parhat , Kataoka Yoshinori , Nishiyama Akira , Sugii Nobuyuki , Tsutsui Kazuo , Natori Kenji , Hattori Takeo , Iwai H.
Published: March 2013

A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed.
Thermal Properties of In2O3 Nanowires
Authors: Hsu Chia Wei , Hung Chien Lin , Chou Li-Jen
Published: March 2013

Alternative energy has attracted much attention n due to the energy crisis and environmental consciousness. Thermoelectric conversion with characteristics in clear and no space limitation has a potential to be the next generation energy. The thermoelectric measurement chips of single In2O3 nanowire are successfully fabricated. In2O3 as the semiconducting material is a good electrical conductor. By the help of nanotechnology, we can reduce thermal conductivity by shrinking the diameter. The thermal conductivity of In2O3 nanowire is about 10 to 2 and decrease with temperature. It is dominated by the phonon collision due to the lower value of κE compared to κ and κE. The Seebeck coefficient of In2O3 nanowire is about -75 to -50 μV/K and increases with temperature.
One-Dimensional Semiconductor Heterostructures: Challenges and Opportunities
Authors: Dayeh Shadi A.
Published: March 2013

The boundary conditions for materials science and device physics in 1D semiconductors are dramatically different from their bulk counterparts. From a materials perspective, surface energetics dominates growth and structural integrity in 1D materials and helps extend their coherency limits for heterostructuring compared to bulk. From a device perspective, compositional changes along their 1D axis provide new control over charge transport, and their cylindrical structure allows for better electronic and optoelectronic device architectures. While we exploited interface engineering to provide new foundations for materials science in nanoscale 1D semiconductors and to perfect their crystal growth, we highlight below some of the opportunities made available by such advances and discuss the challenges that face their development a fundamental growth-device inter-relation level. We focus our discussion on bottom-up or vapor-liquid-solid 1D grown Ge/Si heterostructures.
Au@SnO2 Core-Shell Nanowires: Novel Material for Gas Sensor
Authors: Liu Wei-Ting , Hsu Chia Wei , Chou Li-Jen
Published: March 2013

Via Vapor-Liquid-Solid (VLS) mechanism, Au@SnO2 core-shell nanowires were fabricated on SiO2 substrates with using of high purity Sn metal on which Au nanoparticles were dispersed. According to HRTEM observation, Au@SnO2 core-shell nanowires were single crystal and growing along [001] direction. The resistivity was identified as 7.93×10-3 Ω-cm by I-V measurement.
Surface Plasmon-Enhanced Optical Properties of Composite Materials Containing Metal Nanoparticles: Birefringence and Laser Oscillation
Authors: Tanaka Katsuhisa , Fujita Koji , Murai Shunsuke , Meng Xiangeng , Moriguchi Yusuke , Komine Takuya
Published: March 2013

We report on two types of optical properties enhanced by surface plasmons of metal nanoparticles. One of them is wavelength-selective enhancement of birefringence in ZnO thin films with anisotropic microstructure in which Ag nanoparticles are dispersed. The other is random laser oscillation and amplified spontaneous emission in Au core-SiO2 shell nanoparticles combined with rhodamine 6G. The mechanism of the phenomena is discussed.
2D Oxide Nanosheets: Controlled Assembly and Applications
Authors: Osada Minoru , Sasaki Takayoshi
Published: March 2013

Due to the excitements caused by graphene, other 2D materials have increasingly attracted fundamental research interest as they could open up unprecedented physical properties that cannot be attained in graphene. Here, we present the progress made in properties of 2D oxide nanosheets, highlighting emerging functionalities in electronic applications. Oxide nanosheets are exceptionally rich in both structural diversity and electronic properties, with potential application in areas ranging from electronics to spinelectronics. We utilized oxide nanosheets as a building block in the bottom-up assembly, and successfully developed various functional nanodevices such as nanocapacitors, nanosheet FET, spinelectronic devices, and artificial ferroelectrics.
Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi
Authors: Yasui Kanji , Anezaki Yutaka , Sato Kai , Kato Ariyuki , Kato Takahiro , Suemitsu Maki , Narita Yuzuru , Nakazawa Hideki
Published: March 2013

Ge nanodots were formed on Si(001) 2˚-off substrates after formation of a Si-c(4×4) structure by gas-source molecular beam epitaxy using monomethylgermane as a source gas. Surface structures of the Ge nanodots were measured using reflection high-energy electron diffraction and scanning tunneling microscopy. Photoluminescence spectra of the Ge nanodots capped with SiC layers measured at low temperature exhibited intense peaks around 1.07 and 1.01 eV, which are considered to be originated from the Ge(GeCx) nanodots.
Carbon Nanotube Field Emitters: Fundamental Properties and Applications
Authors: Saito Yahachi
Published: March 2013

Carbon nanotube (CNT) possesses various unique properties such as a needle-like shape with nanometer-size diameter, high mechanical strength, chemical stability and high electrical conductivity, which are advantages as field electron emitters. In this report, intriguing electron emission properties and dynamic behavior of CNT field emitters revealed by field emission microscopy (FEM) and in-situ transmission electron microscopy (TEM) are presented. Geometrical field enhancement factors of single CNTs were also measured at various tip-to-anode distances in TEM. Finally, some promising applications of CNT-based field emission devices are reviewed.
3D Nanowire Architectures for Highly-Efficient Photoelectrochemical Anodes
Authors: Wang Xudong
Published: March 2013

This paper reviews the recent development of surface-reaction-limited pulsed chemical vapor deposition (SPCVD) technique for the growth of titanium dioxide (TiO2) nanorods (NRs) inside highly-confined submicron-sized spaces. The SPCVD growth was determined by surface reactions and the crystal growth was effectively decoupled from precursor vapor concentration. For the first time, SPCVD technique realized a high-density 3D NW architecture by growing TiO2 NR arrays inside dense and deep Si NW forests. Such 3D structures offered super large surface area as well as excellent charge transport property. Therefore, dramatically enhanced efficiency was obtained when they were used as photoelectrochemical (PEC) anode for water splitting. 3D TiO2 NR arrays grown by SPCVD opened a new avenue toward high-performance electrodes design for advancing the performance of PEC and photovoltaic devices.
Gold Nanoparticle 2D-Arrays Chemically Immobilized as Large-Area Near-Field Light Source
Authors: Miki Kazushi , Isozaki Katsuhiro , Ochiai Takao , Taguchi Tomoya , Nittoh Koh-ichi
Published: March 2013

Near-field light sources made it possible to go beyond the diffraction limit. Innovative nanophotonics offers potential throughout the field of photonics, including industrial applications such as high-efficiency solar cells. These applications require a novel technique for generating not a nanometer-scale point but a large-area (mm2-m2) near-field light source. Here, we report the first large-area near-field light source that is densely constructed of uniform-size gold nanoparticles (AuNPs) two-dimensionally arrayed with regular interparticle gaps, which eventually has tunable localized surface plasmon resonance (LSPR) bands (600-1100 nm). The light source is attached by means of chemical coating on 1×1-cm2 substrates, but there is no limitation on the size.
Study of Protein-Peptide Binding Affinity Using AlGaN/GaN High Electron Mobility Transistors
Authors: Huang Chih-Cheng , Lee Geng-Yen , Chyi Jen-Inn , Cheng Hui-Teng , Hsu Chen-Pin , Hsu You-Ren , Ren Fan , Wang Yu-Lin
Published: March 2013

Antibody-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) were used for detecting peptides and revealing the number of binding sites of the antibody and the dissociation constants. Two binding sites were found on this antibody for the peptide and the dissociation constants of the antibody-peptide complex were extracted from a two-binding-site model. The estimated dissociation constants are consistent with the detection limit of the sensor showing the important role of the dissociation constants in the performance of the sensors. The results demonstrate that the AlGaN/GaN HEMTs cannot only be used for biosensors, but also can be used for the biological affinity study.
Revisiting Impurity Doping of III-Nitride Materials for Photonic Device Applications
Authors: Zavada John M
Published: March 2013

More than 20 years have passed since the first reports of rare earth doping silicon and other semiconductor materials for photonic applications. The basic goal of this work has been to achieve optoelectronic functionality in silicon integrated circuits for telecommunications. Over this period of time, many novel approaches and various materials have been investigated. While progress has been sporadic and the basic goal illusive, impurity doping of III-Nitride materials has provided some of the major advances. In this talk I will present a review of recent results concerning rare earth doping of III-Nitride thin films for telecommunication and display applications. In particular, the optical characterization of such films and the performance of prototype light emitting diodes will be reviewed. Reports on the ferromagnetic properties of impurity doped III-Nitride films and the possibility of achieving optical or electrical control.
A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs
Authors: Baca Albert G , Scruggs Andrew J. , Gorenz Alan , Fortune Torben R. , Klem John F. , Briggs Ronald D. , Clevenger Jascinda B. , Patrizi Gary A. , Sullivan Charles T.
Published: March 2013

Step-stress experiments on high-voltage Npn InGaP/GaAs HBTs are shown to reveal a number of degradation mechanisms, singly or in combinations: defect buildup in the emitter depletion region, defect buildup in the neutral base region, possible degradation of Ohmic contacts or increase in epitaxial layer resistances. Defect buildup in the emitter depletion region often precedes other types of degradation. Two less commonly reported degradation mechanisms are also suggested: base Ohmic metal punch-through to the collector and deterioration of the die attach material. It was found that the vast majority of devices failed within 5% of a maximum attainable power level, but when stressed just shy of this catastrophic level, electrical characteristics typically degraded gradually.
Direct Die Solder of GaAs Power Amplifier Dies and Application of Electrolessly Plated Nickel Barrier
Authors: Shen Hong , Maganti Sri , Ramanathan Ravi
Published: March 2013

A GaAs die is attached to a die attach pad on a printed circuit board usually by conductive epoxy or solder paste. Compared to epoxy die attach, direct die solder of GaAs dies onto lead frames have many advantages. Solder offers higher electrical and thermal conductivities, which are important for high power applications. Solder offers higher bonding strength, less die tilting, and less die rotation during die attach process. One of the problems associated with solder die attach is the intermetallic compounds formation between backside metallization of the GaAs die and the solder material. A barrier layer is needed to prevent the intermetallic compound formation at normal operating condition thus failure of the GaAs devices. Such a barrier must have lower electrical resistance, low stress, and must be compatible with current GaAs device manufacturing processes.
TiC Films Formed by Multi-Stacking Process for Diamond Contact Metal Electrodes
Authors: Tanaka Yuki , Kakushima Kuniyuki , Ahmet Parhat , Kataoka Yoshinori , Tsutsui Kazuo , Nishiyama Akira , Sugii Nobuyuki , Natori Kenji , Hattori Takeo , Yamasaki Satoshi , Iwai H.
Published: March 2013

TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.
Application of Inline X-ray Metrology for Defect Characterization of III-V/Si Heterostructures
Authors: Hung P.Y. , Wormington Matthew , Matney Kevin , Ryan Paul , Dunn Kathleen , Wang Albert , Hill Richard , Wong Man-Hoi , Price Jimmy , Wang Wei-E , Bersuker Gennadi
Published: March 2013

High electron mobility III-V materials are strong candidates for nMOS transistors at the 11 nm technology node and beyond. Integrating III-V materials with Si (III-V/Si) is an attractive approach because it leverages the current Si-based manufacturing platform. However, the large lattice mismatch between III-V and Si leads to defects in the channel and compromises device performance and reliability. This paper explores two inline X-ray based characterization techniques, high resolution X-ray diffraction (HRXRD) and X-ray diffraction imaging (XRDI), to characterize defects in novel III-V/Si structures. The benefits and limitations of these techniques will be discussed.
Electrochemical Formation of Ordered Pore Arrays in InP in KCl
Authors: Quill Nathan , Lynch Robert P , O'Dwyer Colm , Buckley Denis Noel
Published: March 2013

Pores are formed electrochemically in n-InP in KCl electrolytes with concentrations of 2 mol dm-3 or greater. The pore morphology is similar to what is seen in other halide-based electrolytes. At low potentials, crystallographically oriented (CO) pores are formed. At higher potentials, current-line oriented (CLO) pores are formed. Crystallographically oriented pore walls are observed for both pore morphologies. When formed at a constant current, potential oscillations are observed which have been correlated to oscillations in the pore width. The CLO pore wall smoothness and overall uniformity increase as KCl concentration is increased. The porous structures formed in KCl compare favourably with those formed in the more acidic or alkaline electrolytes that are typically used to form these structures.
Basic helix-loop-helix transcriptional factor MyoR regulates BMP-7 in acute kidney injury
Authors: Kamiura Nozomu , Hirahashi Junichi , Matsuzaki Yumi , Idei Mana , Takase Osamu , Fujita Toshiro , Takato Tsuyoshi , Hishikawa Keiichi
Published: March 2013

MyoR was originally identified as a transcriptional repressor in embryonic skeletal muscle precursors, but its function in adult kidney has not been clarified. In this study, we tried to clarify the functional role of MyoR using MyoR−/− mice. Cisplatin induced a significantly higher degree of severe renal dysfunction, tubular injury, and mortality in MyoR−/− mice than in wild-type mice. The injection of cisplatin significantly increased the number of apoptotic cells in the kidney tissues of MyoR−/− mice, compared with that in wild-type mice. To clarify the mechanism of severe cisplatin-induced damage and apoptosis in MyoR−/− mice, we focused on the p53 signaling pathway and bone morphogenic protein-7 (BMP-7). Treatment with cisplatin significantly activated p53 signaling in cultured renal proximal tubular epithelial cells (RTECs) in both wild-type and MyoR−/− mice, but no significant difference between the groups was observed. The injection of cisplatin significantly increased the expression of BMP-7 in the kidney tissues of wild-type mice, but no increase was observed in the MyoR−/− mice. Treatment with cisplatin significantly increased the expression of BMP-7 in cultured RTECs from wild-type mice but not in those from MyoR−/− mice. Moreover, treatment with recombinant BMP-7 rescued the cisplatin-induced apoptosis in RTECs from MyoR−/− mice. Taken together, our results demonstrate a new protective role of MyoR in adult kidneys that acts through the regulation of BMP-7.
The emerging role of MRI in quantitative renal glomerular morphology
Authors: Bennett K. M. , Bertram John F. , Beeman Scott C. , Gretz Norbert
Published: March 2013

Techniques to measure morphological parameters, such as glomerular (and thereby nephron) number, glomerular size, and kidney volume, have been vital to understanding factors contributing to chronic kidney disease (CKD). These techniques have also been important to understanding the associations between CKD and other systemic and cardiovascular diseases and have led to the identification of developmental risk factors for these pathologies. However, existing techniques in quantitative kidney morphology are resource- and time-consuming and are destructive to the organ. This review discusses the emerging generation of techniques to study kidney morphology quantitatively using magnetic resonance imaging (MRI) using the intravenous injection of the superparamagnetic nanoparticle cationic ferritin, which binds to the glomerular basement membrane. A primary advantage of MRI over previously established techniques is the ability to quantify morphology in the intact organ with minimal sample preparation. We highlight areas of research where MRI-based morphological measurements will be helpful in animal models and possibly diagnostic clinical nephrology, discuss technical challenges in light of the progress in MRI techniques to date, and identify novel measurements that may be possible using MRI, both ex vivo and in vivo.
Expression of carnitine palmitoyl-CoA transferase-1B is influenced by a cis-acting eQTL in two chicken lines selected for high and low body weight
Authors: Ka Sojeong , Markljung Ellen , Ring Henrik , Albert Frank W. , Harun-Or-Rashid Mohammad , Wahlberg Per , Garcia-Roves Pablo M. , Zierath Juleen R. , Denbow D. Michael , Pääbo Svante , Siegel Paul B. , Andersson Leif , Hallböök Finn
Published: March 2013

Carnitine palmitoyl-CoA transferase-1B is a mitochondrial enzyme in the fatty acid oxidation pathway. In a previous study, CPT1B was identified as differentially expressed in the hypothalamus of two lines of chickens established by long-term selection for high (HWS) or low (LWS) body weight. Mammals have three paralogs ( CPT1a, b and c) while nonmammalian vertebrates only have two ( CPT1A, B). CPT1A is expressed in liver and CPT1B in muscle. CPT1c is expressed in hypothalamus, where it regulates feeding and energy expenditure. We identified an intronic length polymorphism, fixed for different alleles in the two populations, and mapped the hitherto missing CPT1B locus in the chicken genome assembly, to the distal tip of chromosome 1p. Based on molecular phylogeny and gene synteny we suggest that chicken CPT1B is pro-orthologous of the mammalian CPT1c. Chicken CPT1B was differentially expressed in both muscle and hypothalamus but in opposite directions: higher levels in hypothalamus but lower levels in muscle in the HWS than in the LWS line. Using an advanced intercross population of the lines, we found CPT1B expression to be influenced by a cis-acting expression quantitative trait locus in muscle. The increased expression in hypothalamus and reduced expression in muscle is consistent with an increased food intake in the HWS line and at the same time reduced fatty acid oxidation in muscle yielding a net accumulation of energy intake and storage. The altered expression of CPT1B in hypothalamus and peripheral tissue is likely to be a mechanism contributing to the remarkable difference between lines.
Optimization of Contrast-to-Tissue Ratio by Adaptation of Transmitted Ternary Signal in Ultrasound Pulse Inversion Imaging
Authors: Ménigot Sébastien , Girault Jean-Marc
Published: March 2013

Ultrasound contrast imaging has provided more accurate medical diagnoses thanks to the development of innovating modalities like the pulse inversion imaging. However, this latter modality that improves the contrast-to-tissue ratio (CTR) is not optimal, since the frequency is manually chosen jointly with the probe. However, an optimal choice of this command is possible, but it requires precise information about the transducer and the medium which can be experimentally difficult to obtain, even inaccessible. It turns out that the optimization can become more complex by taking into account the kind of generators, since the generators of electrical signals in a conventional ultrasound scanner can be unipolar, bipolar, or tripolar. Our aim was to seek the ternary command which maximized the CTR. By combining a genetic algorithm and a closed loop, the system automatically proposed the optimal ternary command. In simulation, the gain compared with the usual ternary signal could reach about 3.9 dB. Another interesting finding was that, in contrast to what is generally accepted, the optimal command was not a fixed-frequency signal but had harmonic components.
Fine Spectra of Upper Triangular Triple-Band Matrices over the Sequence Space ()
Authors: Karaisa Ali , Başar Feyzi
Published: March 2013

The fine spectra of lower triangular triple-band matrices have been examined by several authors (e.g., Akhmedov (2006), Başar (2007), and Furken et al. (2010)). Here we determine the fine spectra of upper triangular triple-band matrices over the sequence space . The operator on sequence space on is defined by , where , with . In this paper we have obtained the results on the spectrum and point spectrum for the operator on the sequence space . Further, the results on continuous spectrum, residual spectrum, and fine spectrum of the operator on the sequence space are also derived. Additionally, we give the approximate point spectrum, defect spectrum, and compression spectrum of the matrix operator over the space and we give some applications.
Current Density Imaging Using Directly Measured HarmonicBzData in MREIT
Authors: Park Chunjae , Kwon Oh In
Published: March 2013

Magnetic resonance electrical impedance tomography (MREIT) measures magnetic flux density signals through the use of a magnetic resonance imaging (MRI) in order to visualize the internal conductivity and/or current density. Understanding the reconstruction procedure for the internal current density, we directly measure the second derivative ofBzdata from the measuredk-space data, from which we can avoid a tedious phase unwrapping to obtain the phase signal ofBz. We determine optimal weighting factors to combine the derivatives of magnetic flux density data,∇2Bz, measured using the multi-echo train. The proposed method reconstructs the internal current density using the relationships between the induced internal current and the measured∇2Bzdata. Results from a phantom experiment demonstrate that the proposed method reduces the scanning time and provides the internal current density, while suppressing the background field inhomogeneity. To implement the real experiment, we use a phantom with a saline solution including a balloon, which excludes other artifacts by any concentration gradient in the phantom.
Particle Swarm Algorithms to Solve Engineering Problems: A Comparison of Performance
Authors: Tomassetti Giordano , Cagnina Leticia
Published: March 2013

In many disciplines, the use of evolutionary algorithms to perform optimizations is limited because of the extensive number of objective evaluations required. In fact, in real-world problems, each objective evaluation is frequently obtained by time-expensive numerical calculations. On the other hand, gradient-based algorithms are able to identify optima with a reduced number of objective evaluations, but they have limited exploration capabilities of the search domain and some restrictions when dealing with noncontinuous functions. In this paper, two PSO-based algorithms are compared to evaluate their pros and cons with respect to the effort required to find acceptable solutions. The algorithms implement two different methodologies to solve widely used engineering benchmark problems. Comparison is made both in terms of fixed iterations tests to judge the solution quality reached and fixed threshold to evaluate how quickly each algorithm reaches near-optimal solutions. The results indicate that one PSO algorithm achieves better solutions than the other one in fixed iterations tests, and the latter achieves acceptable results in less-function evaluations with respect to the first PSO in the case of fixed threshold tests.
Assembling Crystals of Type A
Authors: Danilov Vladimir I. , Karzanov Alexander V. , Koshevoy Gleb A.
Published: March 2013

Regular An-crystals are certain edge-colored directed graphs, which are related to representations of the quantized universal enveloping algebra Uq(𝔰𝔩n+1). For such a crystal K with colors 1,2,…,n, we consider its maximal connected subcrystals with colors 1,…,n-1 and with colors 2,…,n and characterize the interlacing structure for all pairs of these subcrystals. This enables us to give a recursive description of the combinatorial structure of K via subcrystals and develop an efficient procedure of assembling K.
The Meaning of Leprosy and Everyday Experiences: An Exploration in Cirebon, Indonesia
Authors: Peters Ruth M. H. , Dadun  , Lusli Mimi , Miranda-Galarza Beatriz , van Brakel Wim H. , Zweekhorst Marjolein B. M. , Damayanti Rita , Seda Francisia S. S. E. , Bunders Joske F. G. , Irwanto
Published: March 2013

It is imperative to consider the meaning of leprosy and everyday experiences of people affected by leprosy and key persons in the community if one aims to make leprosy services more effective, which appears necessary in Indonesia given the large numbers of new cases detected annually. However, little is written in the international literature about the experiences of people currently being treated for leprosy, those cured, or other key informants. This paper analyses the narratives of the people by drawing upon in-depth interviews with 53 participants and 20 focus groups discussions. The participants were purposively selected. We provide insights into the experiences of people and the meaning they give to leprosy and highlight aspect of aetiology, spirituality, religion, darkening of the skin, and sorcery. We also examine experiences of seeking care and focused on the impact of the disease in particular on the elderly and children. In conclusion, the continued need for implementation of leprosy services in Indonesia is very evident. The diversities in people’s experiences with leprosy indicate a demand for responsive leprosy services to serve the diverse needs, including services for those formally declared to be “cured.”
The Head-Disk Interface Roadmap to an Areal Density of Tbit/in2
Authors: Marchon Bruno , Pitchford Thomas , Hsia Yiao-Tee , Gangopadhyay Sunita
Published: March 2013

This paper reviews the state of the head-disk interface (HDI) technology, and more particularly the head-medium spacing (HMS), for today’s and future hard-disk drives. Current storage areal density on a disk surface is fast approaching the one terabit per square inch mark, although the compound annual growth rate has reduced considerably from ~100%/annum in the late 1990s to 20–30% today. This rate is now lower than the historical, Moore’s law equivalent of ~40%/annum. A necessary enabler to a high areal density is the HMS, or the distance from the bottom of the read sensor on the flying head to the top of the magnetic medium on the rotating disk. This paper describes the various components of the HMS and various scenarios and challenges on how to achieve a goal of 4.0–4.5 nm for the 4 Tbit/in2density point. Special considerations will also be given to the implication of disruptive technologies such as sealing the drive in an inert atmosphere and novel recording schemes such as bit patterned media and heat assisted magnetic recording.
Differential Diagnosis Tool for Parkinsonian Syndrome Using Multiple Structural Brain Measures
Authors: Ota Miho , Nakata Yasuhiro , Ito Kimiteru , Kamiya Kouhei , Ogawa Masafumi , Murata Miho , Obu Satoko , Kunugi Hiroshi , Sato Noriko
Published: March 2013

Clinical differentiation of parkinsonian syndromes such as the Parkinson variant of multiple system atrophy (MSA-P) and cerebellar subtype (MSA-C) from Parkinson's disease is difficult in the early stage of the disease. To identify the correlative pattern of brain changes for differentiating parkinsonian syndromes, we applied discriminant analysis techniques by magnetic resonance imaging (MRI). T1-weighted volume data and diffusion tensor images were obtained by MRI in eighteen patients with MSA-C, 12 patients with MSA-P, 21 patients with Parkinson’s disease, and 21 healthy controls. They were evaluated using voxel-based morphometry and tract-based spatial statistics, respectively. Discriminant functions derived by step wise methods resulted in correct classification rates of 0.89. When differentiating these diseases with the use of three independent variables together, the correct classification rate was the same as that obtained with step wise methods. These findings support the view that each parkinsonian syndrome has structural deviations in multiple brain areas and that a combination of structural brain measures can help to distinguish parkinsonian syndromes.
Diabetes Self-Management Education: Miles to Go
Authors: Klein Helen Altman , Jackson Sarah M. , Street Kenley , Whitacre James C. , Klein Gary
Published: March 2013

This meta-analysis assessed how successfully Diabetes Self-Management Education (DSME) interventions help people with type 2 diabetes achieve and maintain healthy blood glucose levels. We included 52 DSME programs with 9,631 participants that reported post-intervention A1c levels in randomized controlled trials. The training conditions resulted in significant reductions in A1c levels compared to control conditions. However, the impact of intervention was modest shifting of only 7.23% more participants from diabetic to pre-diabetic or normal status, relative to the control condition. Most intervention participants did not achieve healthy A1c levels. Further, few DSME studies assessed long-term maintenance of A1c gains. Past trends suggest that gains are difficult to sustain over time. Our results suggested that interventions delivered by nurses were more successful than those delivered by non-nursing personnel. We suggest that DSME programs might do better by going beyond procedural interventions. Most DSME programs relied heavily on rules and procedures to guide decisions about diet, exercise, and weight loss. Future DSME may need to include cognitive self-monitoring, diagnosis, and planning skills to help patients detect anomalies, identify possible causes, generate corrective action, and avoid future barriers to maintaining healthy A1c levels. Finally, comprehensive descriptions of DSME programs would advance future efforts.
Extractive Deep Desulfurization of Liquid Fuels Using Lewis-Based Ionic Liquids
Authors: Dharaskar Swapnil A. , Wasewar Kailas L. , Varma Mahesh N. , Shende Diwakar Z.
Published: March 2013

A new class of green solvents, known as ionic liquids (ILs), has recently been the subject of intensive research on the extractive desulfurization of liquid fuels because of the limitation of traditional hydrodesulfurization method. In present work, eleven Lewis acid ionic liquids were synthesized and employed as promising extractants for deep desulfurization of the liquid fuel containing dibenzothiophene (DBT) to test the desulfurization efficiency. [Bmim]Cl/FeCl3was the most promising ionic liquid and performed the best among studied ionic liquids under the same operating conditions. It can remove dibenzothiophene from the model liquid fuel in the single-stage extraction process with the maximum desulfurization efficiency of 75.6%. It was also found that [Bmim]Cl/FeCl3may be reused without regeneration with considerable extraction efficiency of 47.3%. Huge saving on energy can be achieved if we make use of this ionic liquids behavior in process design, instead of regenerating ionic liquids after every time of extraction.
Construction of Dominating Sets of Certain Graphs
Authors: Alikhani Saeid , Peng Yee-Hock
Published: March 2013

Let G be a simple graph. A set S⊆V is a dominating set of G, if every vertex in V∖S is adjacent to at least one vertex in S. We denote the family of dominating sets of a graph G with cardinality i by 𝒟(G,i). In this paper we introduce graphs with specific constructions, which are denoted by G(m). We construct the dominating sets of G(m) by dominating sets of graphs G(m−1), G(m−2), and G(m−3). As an example of G(m), we consider 𝒟(Pn,i). As a consequence, we obtain the recursive formula for the number of dominating sets of G(m).
General Solutions of Fully Fuzzy Linear Systems
Authors: Allahviranloo T. , Salahshour S. , Homayoun-nejad M. , Baleanu D.
Published: March 2013

We propose a method to approximate the solutions of fully fuzzy linear system (FFLS), the so-calledgeneral solutions. So, we firstly solve the 1-cut position of a system, then some unknown spreads are allocated to each row of an FFLS. Using this methodology, we obtain some general solutions which are placed in the well-known solution sets like Tolerable solution set (TSS) and Controllable solution set (CSS). Finally, we solved two examples in order to demonstrate the ability of the proposed method.
Graphs with no K3,3 Minor Containing a Fixed Edge
Authors: Wagner Donald K.
Published: March 2013

It is well known that every cycle of a graph must intersect every cut in an even number of edges. For planar graphs, Ford and Fulkerson proved that, for any edge e, there exists a cycle containing e that intersects every minimal cut containing e in exactly two edges. The main result of this paper generalizes this result to any nonplanar graph G provided G does not have a K3,3 minor containing the given edge e. Ford and Fulkerson used their result to provide an efficient algorithm for solving the maximum-flow problem on planar graphs. As a corollary to the
main result of this paper, it is shown that the Ford-Fulkerson algorithm naturally extends to this more general class of graphs.
Intelligent Photovoltaic Maximum Power Point Tracking Controller for Energy Enhancement in Renewable Energy System
Authors: Subiyanto  , Mohamed Azah , Hannan M. A.
Published: March 2013

Photovoltaic (PV) system is one of the promising renewable energy technologies. Although the energy conversion efficiency of the system is still low, but it has the advantage that the operating cost is free, very low maintenance and pollution-free. Maximum power point tracking (MPPT) is a significant part of PV systems. This paper presents a novel intelligent MPPT controller for PV systems. For the MPPT algorithm, an optimized fuzzy logic controller (FLC) using the Hopfield neural network is proposed. It utilizes an automatically tuned FLC membership function instead of the trial-and-error approach. The MPPT algorithm is implemented in a new variant of coupled inductor soft switching boost converter with high voltage gain to increase the converter output from the PV panel. The applied switching technique, which includes passive and active regenerative snubber circuits, reduces the insulated gate bipolar transistor switching losses. The proposed MPPT algorithm is implemented using the dSPACE DS1104 platform software on a DS1104 board controller. The prototype MPPT controller is tested using an agilent solar array simulator together with a 3 kW real PV panel. Experimental test results show that the proposed boost converter produces higher output voltages and gives better efficiency (90%) than the conventional boost converter with an RCD snubber, which gives 81% efficiency. The prototype MPPT controller is also found to be capable of tracking power from the 3 kW PV array about 2.4 times more than that without using the MPPT controller.