bluuebunny/crossref_metadata_2025 huggingface dataset:
A New Multi-Electrode Evaporator for Refractory Metals and Its Application to Getter Pumps
Authors: Okano Tatsuo
Published: November 2005

The design and operating characteristics of a new multielectrode evaporator are described. To examine the operation of this evaporator, deposition rates for Ta, Nb and Mo were measured by a quartz-crystal thickness monitor placed 135 mm from the source. The values obtained are as follows: Ta, 73 Å/min at 400 W; Nb, 29 Å/min at 200 W; Mo, 75 Å/min at 160 W. The gettering properties of deposited Ta were studied in an ultra-high vacuum system. The ultimate pressure below 8×10-9 Pa was obtained by using Ta films deposited onto liquid nitrogen cooled walls. The significance of reducing gas evolution from getter films is emphasized.
Saturated Dispersion Spectral Shape in CH4 for Frequency Stabilization
Authors: Ohtsu Motoichi , Tako Toshiharu
Published: November 2005

Several results of numerical calculations are presented to estimate the characteristics of a saturated dispersion spectrum in CH4 for the frequency stabilization of a He-22Ne laser at 3.39 µm. As a result of the calculations, the maximum of the signal intensity was estimated to be 0.465% of the probe beam intensity. The signal profile was deformed by the difference between the sensitivities of the two detectors Δ
s and by the misalignment of the Wollaston prism φ used for the measurement. These results were compared with experimental results, and close agreements were obtained. Furthermore, the relations between the laser frequency stability and several parameters (Δ
s, φ, and the intensity fluctuation of the laser beam δI/I) were estimated to design a laser apparatus with improved frequency stability.
Driven Scattering Method for High Temperature Plasma Diagnostics
Authors: Nagatsu Masaaki , Tsukishima Takashige
Published: November 2005

A theoretical analysis and numerical evaluations are developed for a driven scattering system using a power-modulated electromagnetic wave beam as a driver to excite electrostatic waves such as ion acoustic waves and/or ion cyclotron waves. The plasma parameters, especiallyTi, can be evaluated from the dispersion measurements of the driven electrostatic wave by electromagnetic wave scattering. Numerical values of the relevant experimental parameters are examined when the proposed method is applied to Tokamak devices such as JIPP T-II and JT-60. The results of numerical evaluations show that the power requirement for the incident electromagnetic wave in the driven scattering method is much less stringent as compared with the ion Thomson scattering method.
An All Dry Mask Making Process by Gas Plasma
Authors: Yamazaki Teruhiko , Tanaka Kazuhiro , Nakata Hidefumi
Published: November 2005

An all dry mask making process is demonstrated in which gas plasmas are used. A photoresist film was exposed to an electron beam with dose range of 2.5×10-4C/cm2 to 5×10-4C/cm, and the resist film was dry developed using a wet air gas plasma. Dry developed resist patterns were obtained with good edge quality. The dry developed patterns were very thin films. A chromium photomask film was successfully etched using a mixed gas plasma of CCl4 and air. From the data obtained by an FT-IR analysis, it is speculated that the phenolic hydroxy group which has a high resistivity to the gas plasma environment was formed in the resist film by electron beam radiation.
High Energy As+ Ion Implantation into Si–Arsenic Profiles and Electrical Activation Characteristics–
Authors: Takahashi Mitsutoshi , Nakata Jyoji , Kajiyama Kenji
Published: November 2005

High energy (a few MeV) As+ was uniformly implanted into 2'' Si (111) wafers at doses of 1013–1016 cm-2. Implanted As profiles were precisely measured by the Rutherford backscattering method (RBS) over a wide energy range (0.5–2.5 MeV). Experimental values for R
p and Δ
R
p were larger than the LSS calculation values by about 15% and 30%, respectively.
After annealing, carrier profiles were measured by the differential sheet resistance and C-V methods. They agreed well with a Gaussian distribution, defined by R
p and Δ
R
p measured by RBS, from peak to surface over 4 figures of concentration.
Implanted As is easily activated by 700°C annealing with low doses (∼1014 cm-2). Activation ratio depends mainly on peak arsenic concentration and not on implantation energy.
In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+ Ion Implantation
Authors: Nakata Jyoji , Takahashi Mitsutoshi , Kajiyama Kenji
Published: November 2005

High energy As+ ions have been implanted by a 2.5 MeV Van-de-Graaff accelerator. Implantation induced damage in silicon crystal is anomalously smaller than that estimated from the calculation for nuclear deposited energy density. The logarithm for observed damage degree depends linearly on the inverse absolute temperature of the wafer during implantation. The 0.18 eV activation energy coincides with the 0.18 eV migration energy for the doubly negative vacancy.
The anomalously small damage is attributed to in situ recrystallization of damage assisted by migration of the doubly negative vacancy (V
-) which is formed by high energy heavy ion implantation. As the wafer temperature is below 300°C, and activation energy is small, ordinary solid phase epitaxial regrowth does not occur.
Thermal Instability of Shear Flows with a Compressibility Effect
Authors: Chand Subhash , Agrawal S. C.
Published: November 2005

Thermal instability of a shear layer of viscous or non-viscous fluid at low Mach number is investigated when the system is either heated from below or above. It has been shown that compressibility due to thermal effect has a stabilizing character. Viscosity helps in reducing the growth rate of unstable modes. Characterization of modes as oscillatroy modes under certain conditions is another important conclusion. In the case of non-viscous theory, the results are indicated by direct analogy with the work of Agrawal and Banerjee (1968, 1969).
Measurement of Propagation Velocities of the Normal Zone in a 1 mφ×1 m Superconducting Solenoid Magnet
Authors: Hirabayashi Hiromi , Morimoto Kimio , Wake Masayoshi , Yamada Ryuji , Yamamoto Akira , Mori Shigeki , Yoshizaki Ryozo , Kawakami Hisao , Kondo Kunitaka , Aihara Katsuzo , Kazawa Yoshiaki , Kimura Hiroshi , Ogata Hisao , Saito Ryusei , Suzuki Shohei , Miyake Yasuhiko
Published: November 2005

Propagation velocities of the normal zone in a 1 mφ×1 m superconducting solenoid magnet were unambiguously measured as a function of the magnet excitation current by inducing quenches with a heater. The magnet was built to study the feasibility of constructing thin, large solenoid magnets and it has a single layer aluminum-stabilized NbTi/Cu superconductor of 269 turns. The ratio of Al:NbTi:Cu of the conductor is 24:1:1. The design current of the conductor is 4.5 kA at 1.5 Tesla. Measured velocities are 30, 65, and 90 m/s in the direction of the conductor at 2020, 3030, and 3540 A, respectively. Thermal distributions inside the coil after quenches were quite uniform and no local overheating was observed.
Extreme Ultraviolet Spectra of Emission from Plasma Focus. I. Fe Ion Lines from 70 to 210 Å
Authors: Hasama Toshifumi , Onishi Yoshihiko , Uchiike Masamitsu , Fukuda Kuniya
Published: November 2005

Multiply-ionized Fe atoms were produced by discharges in a plasma focus apparatus with an Fe electrode in an ambient atmosphere of He, and the discharge condition for the most intense emission from Fe ions was found. The extreme ultraviolet spectrum was photographed under this condition with a grazing incidence spectrograph in the wavelength range between 70 and 500 Å. The spectrum has many strong emission lines in the range from 170 to 200 Å and is very similar to the spectrum of the quiet sun. Lines of FeVIII to XVIII ions are identified in the range between 90 and 210 Å and are tabulated together with the measured relative intensities. The results are discussed in relation to the solar and laboratory plasma spectra so far observed in the extreme ultraviolet range.
Determination of Distribution of Misfit Dislocations in PbS/PbSe Bi-Crystals by Channelling of Energetic He Ions
Authors: Kimura Kenji , Nannami Michi-hiko
Published: November 2005

Numerical calculation of the dechannelling of energetic He ions at misfit dislocations in epitaxially-grown PbS/PbSe bi-crystals has been performed. It is shown that the depth region around a dislocation in which appreciable dechannelling occurs is of the order of half of the period of oscillatory motion of the channelling ions. From a comparison of the observed cross-sections and those calculated for several models of the distribution of dislocations, the distribution of misfit dislocations in the bi-crystals has been determined. These dislocations are not co-planar but are distributed in a region about 60 nm thick at the interface.
Measurement of Sputtering Rate for 10 keV O2
+ Ions with Ion Microanalyzer
Authors: Okajima Yoshiaki
Published: November 2005

The sputtering rates of single-crystal Si and polycrystalline Ag, Cu, Ni and Al were measured. The target materials were bombarded with oxygen ions accelerated at 10 kV. The sputtering rates of the target materials were a fifth of those obtained with an argon ion beam. The difference was larger than the difference between the masses of the oxygen and argon ions used for the incident beams. However, the sputtering rates with oxygen ions were related to the strenght of the bonds between the atams of the target material by the following expression, from analogy with an argon ion beam. S
r=4(I/D)(E
c/M
t)-1.4, where S
r is the sputtering rate, I is the current density of the incident ions, and D, M
t and E
c are the atomic density, mass number and cohesive energy of the target material, respectively.
Influence of Water on the Electric Breakdown of Polyethylene Terephthalate Films
Authors: Miyairi Keiichi
Published: November 2005

The electric strength of polyethylene terephthalate (PET) films was measured. An anomalous temperature dependence of the electric strength was observed around 0°C: the electric strength of PET films moistened with water was minimum around 0°C, while PET films evacuated in vacuum or subjected to heat treatment did not have this minimum. The electric strength of PET films measured with a water electrode was rather low, and it decreased slightly with temperature above 0°C. The breakdown mechanism responsible for wet PET films is discussed in this report in terms of thermal breakdown, and the jump distance of carriers is estimated to be 10–20 Å.
Measurements of Dielectric Constants in Lead Monoxide Single Crystals
Authors: Unoki Hiromi , Oka Kunihiko , Nakamura Akira
Published: November 2005

Measurements of the dielectric constant of tetragonal-phase and orthorhombic-phase lead monoxide single crystals are reported, with reference to the electric capacitance of the surface oxide layer of metallic lead; and all the numerical results are given for the principal values of the permittivity tensor for both crystals. The observation was carried out by measuring the electric capacitance of the crystals at frequencies from 100 Hz to 1 MHz and by the perturbation method for microwave-resonance frequency at 9 GHz, in the temperature range from 4.2 K to room temperature. The accuracy of the measurements was within 5 percent, and considerable anisotropy in the experimental results was found for both crystals.
Interferometric Measurement of the Diameters of Fused Quartz Spheres
Authors: Seino Shoichi
Published: November 2005

This paper describes a method for the interferometric measurement of the diameter of a fused quartz sphere with Fabry-Perot etalon. Interference fringes are produced by laser radiation reflected from each surface of the etalon and the adjacent surface of the sphere and then their gaps are measured. The diameter of the sphere is derived by subtracting the two gaps from the plate separation of the etalon. Several lines from a free-running He-Se laser are used as the light sources for the exact fraction method together with the 633 nm line of a Lamb-dip stabilized He-Ne laser. The effects of fringe distortion, caused by laser radiation reflected from the other surface of the transparent sphere, are eliminated by placing a small circular stop at the image point of the light source. Experiments have shown that the precision of measurement of the diameter is about ±0.16 ppm at 95% confidence interval.
Electrical Measurement of Contact Pressure Distribution of a Wheel Running on Soft Ground
Authors: Takahashi Kiyoshi , Chiyo Susumu , Wakabayashi Akimasa
Published: November 2005

A wheel was pulled or driven on soft ground and the contact pressure between the tread and the ground was measured with a small pressure sensor attached flush with the surface of the wheel. The shapes of the pressure distribution curves along the contact surface were almost all bell-shaped and symmetrical. Their height and width increased when the wheel load increased, and the position of the hill top shifted forward; however, this shift was very slight for a driven wheel.
Dry Etching of Nb and Fabrication of Nb Variable-Thickness-Bridges
Authors: Harada Takeshi , Gamo Kenji , Namba Susumu
Published: November 2005

Several reactive dry etching methods; ion etching, sputter etching and plasma etching, were studied in order to fabricate a niobium variable-thickness type thin film bridge (VTB). Niobium was etched by CF4 reactive sputter etching with submicron accuracy and no significant influence on the superconducting transition temperature except very near the surface (<200 Å). The niobium VTB behaved as an S-S'-S bridge, and a reduced self-heating effect was realized by a variable-thickness geometry. The DC Josephson effect was observed in the temperature range without thermal hysteresis. The quality factor of the I
c
R
n product obtained was at least 0.42 mV.
Measurements of Energetic Particle Beams in a Plasma Focus
Authors: Kondoh Yoshiomi , Shimoda Katsuji , Hirano Katsumi
Published: November 2005

Measurements of energetic particle beams in a plasma focus with a Mather-type device are presented. Two Faraday cups are used simultaneously to measure energetic particle beams in both the up- and down-stream directions with respect to the discharge current. In the upstream direction, only an electron beam was detected and no ion beam was observed. In the down-stream direction, an ion beam was detected first and then an electron beam followed 50–100 ns from the onset of the ion beam signal. It is shown that at a relatively high filling pressure of 4–6 Torr D2, the neutron yield increases when the electron beams are more intense in both directions.
Gap States and ESR of Boron-Doped CVD Amorphous Silicon
Authors: Nakashita Toshio , Hirose Masataka , Osaka Yukio
Published: November 2005

The density distribution of the gap states in boron-doped CVD amorphous silicon has been determined by the field-effect technique. The measured density of the midgap states as high as 2×1018 cm-3eV-1 for undoped a-Si is appreciably reduced by doping with boron atoms. Electronic states arising from unpaired spins are found at energies near E
v+0.30 eV, creating a bump in the gap states. The experimental results are discussed in conjunction with a divacancy model.
Studies of Ordered Monodisperse Latexes. IV. Mechanism of Ordering
Authors: Ohtsuki Toshiya , Kishimoto Akihiko , Mitaku Shigeki , Okano Koji
Published: November 2005

The order-disorder phase transition of aqueous suspensions of charged polystyrene spheres was studied both experimentally and theoretically. Phase diagrams of four kinds of samples with different surface charge numbers were determined from the observation of disappearance of the characteristic iridescence in the ordered state. The ordered phase appeared in the large volume fraction and low salt concentration regions. The ordered region became larger according to the surface charge number increase.
On the basis of Lindemann's law, phase diagrams were also obtained theoretically. The theory reproduced quantitatively the experimental phase diagrams of all the samples used. The applicability of the Debye-Hückel approximation was discussed and the evaluation of the static rigidity reported in a previous paper [Jpn. J. Appl. Phys.: 19 (1980) 439] was improved.
Scattering of Diatomic and Polyatomic Molecules from the (111) Plane of Silver
Authors: Asada Hiromu
Published: November 2005

The scattering of N2, O2, NO, CO, CO2, and CH4 molecular beams from the (111) plane silver is studied experimentally. When compared with rare gases, the scattering lobe is found to shift toward the surface tangent at incident angles in the low and middle range, and to broaden at low incident energies. The broadness and the shift of the scattering lobe for diatomic gases are found to correlate with the unbalance of the pairing atoms in the diatomic molecule with respect to the mass or atomic size.
Discharge Current from Nylon 6 at High Temperature
Authors: Nakamura Shuhei , Sawa Goro , Ieda Masayuki
Published: November 2005

Previously, the absorption charge of nylon 6 has been described as being caused by the accumulation of ions around the electrode in the neutralized state. The behavior of ions accumulated around the electrode is further studied by using the techniques of thermally-stimulated discharge current (TSDC), isothermal discharge, and reversion-voltage current. No difference was found in the absorption charge between Au and Al electrodes, but the discharging charge with Au is greater than that with Al. The isothermal discharge is always smaller than the absorption charge accumulated in the neutralized state, which is promoted by heating. It is also shown that the state of the neutralized ions depends on the electric field and the period of absorption.
Electrochromic Display Device Based on Amorphous WO3 and Solid Proton Conductor
Authors: Shizukuishi Makoto , Kaga Eiichi , Shimizu Isamu , Kokado Hiroshi , Inoue Eiichi
Published: November 2005

An amorphous WO3 electrochromic display device (a-WO3ECD) employing a solid proton conductor was investigated. The resistivity of the solid proton conductor composed of p-toluenesulfonic acid (p-TsOH) and urea (1.2:1 in molar ratio) was 102∼103 Ω cm at a relative humidity of 60% (20°C). The a-WO3ECD using the mixture of p-TsOH/urea and glycerin (20 wt.%) exhibited satisfactory EC performances such as response time (0.4 s) and open-circuit memory (over 2 hours). The most attractive feature of the ECD was an excellent visual appearance in a white and diffuse background of the solid electrolyte layer.
Photoelectron Counting Statistics of Laser Light Scattered by Very Dilute Solution
Authors: Yoshikawa Manabu , Suzuki Norihito , Suzuki Tatsuro
Published: November 2005

The photon counting statistics of light is studied, in which the various types of photon counting distribution can be represented by Nakagami'sm-distribution. To investigate this theoretical utility we have measured the photon counting distribution of laser light scattered by a very dilute solution in which non-Gaussian statistics appear. The comparison is also made by the factrial moment between the experimental value and theoretical one. The experimental distribution is in agreement with the theoretical distribution.
Excitation of the Trivelpiece-Gould Wave in a Magnetized Plasma by a Slow Waveguiding Circuit II
Authors: Idehara Toshitaka , Hayashi Haruyuki
Published: November 2005

The possibility exciting the electron plasma wave (Trivelpiece-Gould wave) by using a slow waveguiding circuit is discussed, assuming a plasma with an inhomogeneous density distribution. The equi-phase lines of launched waves and their propagation features are studied in a plasma with density gradient at an oblique angle to the magnetic field. The results can be explained as a development of those reported for a plasma with density gradient perpendicular to the field.
Applications of Uncertainty Analysis to Visual Evaluation of Density in Radiographs
Authors: Uchida Suguru , Ohtsuka Akiyoshi , Fujita Hiroshi
Published: November 2005

Uncertainty analysis, developed as a method of absolute judgment in psychology, is applied to a method of radiographic image evaluation with perceptual fluctuations and to an examination of visual evaluation of density in radiographs. Subjects are composed of three groups of four neurosurgeons, four radiologic technologists and four nonprofessionals. By using a five-category rating scale, each observer is directed to classify 255 radiographs randomly presented without feedback. Characteristics of each observer and each group can be shown quantitatively by calculated information values. It is also described that bivariate uncertainty analysis or entropy method can be used to calculate the degree of agreement of evaluation.
Sodium Contamination in SiO2 Films Induced by Plasma Ashing
Authors: Akiya Hideo , Saito Kazuyuki , Kobayashi Kenji
Published: November 2005

A sodium contamination phenomenon in a SiO2 film caused by O2 plasma ashing of a resist film was studied using the triangular voltage sweep method and neutron activation analysis. The contaminant sodium atoms have been proven to come from the resist film. The contamination occurs in two stages: (i) Before ashing end point, the sodium atoms dissolve only in the SiO2 surface layer by 1012 cm-2 surface area density or less. (ii) After the endpoint, the sodium amount in the SiO2 film increases markedly and eventually saturates at 1013–1014 cm-2. The sodium atoms in the SiO2 film migrate toward the SiO2/Si interface during over-ashing in O2 plasma. Ashing both in O2-CF4 plasma and in a metal shield cylinder are effective in reducing the sodium transportation rate and in preventing contamination.
Effect of Growth Temperature on Si MBE Film
Authors: Tabe Michiharu , Arai Kunihiro , Nakamura Hiroaki
Published: November 2005

The dependence of Si MBE film on growth temperature is studied by means of reflection high-energy electron diffraction, Rutherford backscattering and Auger electron spectroscopy. It is found that above 680°C, high-quality epitaxial film can be grown even without intentional preheating by not removing the surface oxide formed during chemical cleaning of the substrate. The surface oxide protects the substrate surface from contamination, and should be removed immediately before growth.
In addition, structural imperfections in Si films grown at lower temperatures are observed.
Dynamics of the Sun-Mill
Authors: Ikuta Kazunari
Published: November 2005

The dynamic behavior of the sun-mill is analysed in detail and the experimental results for the output power of the ultimate sun-mill are also given.
On the Boundary between Facet and Off-Facet in Pulled GaSb Single Crystals
Authors: Quang Nguyen V. , Kumagawa Masashi
Published: November 2005

The boundaries between the faceted and the off-faceted regions in GaSb single crystals pulled from the melt in the <1̄1̄1̄> direction were studied. There appeared to be wide bands, fine lines and invisible structures owing to the asymmetrical thermal distributions in the melt. These boundaries introduce a microscopic inhomogeneous distribution of impurities in pulled crystals, because the impurity concentration in the boundaries was lower than that in both the faceted and the off-faceted regions.
Theory and Experiments on the Photoacoustic Effect in Double-Layer Solids
Authors: Morita Masahiko
Published: November 2005

The Rosencwaig-Gersho theory of the photoacoustic effect is extended to the case of double-layer solids. The general expression for the complex amplitude of the periodic temperature at the solid-gas boundary is obtained. Simplified expressions for several special cases are derived. The observed relation between the phase of the photoacoustic signal and the thickness of the surface layer represents features of the theoretically-derived formulae for specific conditions.
The Superheat-Limit of Liquid Oxygen and Nitrogen at 1 atm
Authors: Nishigaki Kazu , Saji Yoshiro
Published: November 2005

The superheating of bimolecular cryogenic liquids (oxygen, nitrogen) was measured at one atmospheric pressure. The maximum superheating data obtained here were compared with the results of calculation based on the Becker-Döring-Zeldovich homogeneous nucleation theory. Good agreement between theory and experiment was found, and the magnitude of the super-heat-limit T
nucleation-T
coexist was well represented as a function of the temperature gap T
critical-T
coexist, as T
nucleation-T
coexist≃0.68 (T
critical-T
coexist) at 1 atm.
Optical Propagation and Conversion Properties of Hybrid Modes in Gyrotropic YIG Film Waveguides with Anisotropic Crystal Cover Layers
Authors: Miyazaki Yasumitsu , Taki Kazunari , Akao Yasuo
Published: November 2005

The dispersion and field distribution properties of hybrid eigen modes in gyrotropic YIG thin-film waveguides with GGG substrates and anisotropic crystal covers are precisely studied for their application to nonreciprocal devices such as optical film isolators. Phase matching and strong coupling conditions due to anisotropic top layers on gyrotropic films are derived for two independent fundamental hybrid modes. It is found that the nonreciprocal thin film waveguides of 50 percent mode conversion necessary for constructing optical isolators can be achieved using LiIO3 crystals and YIG films of thickness 0.36 µm on GGG substrates of length 0.5 mm.
Production Mechanism in an ECR-Type Multiply-Charged Ion Source
Authors: Oda Keiji , Abe Nobuyuki , Yamamoto Takayoshi , Kawanishi Masaharu
Published: November 2005

A calculation model is proposed for the production of multiply-charged ions in an ECR plasma. Numerical calculations have been carried out using this model to estimate the charge state distribution of multiply-charged ions. It was expected that the K-shell ionization process or the charge exchange process would considerably affect the charge state distribution in the ECR plasma. Thus the charge state distributions of ions produced in the ECR plasma were measured as functions of gas pressure and input microwave power, and on comparing the measured and calculated distributions, it was recognized that K-shell ionization and charge exchange can not be neglected for a high input-power of about 1000 W and a high gas-pressure of 2.4×10-4 Torr.
Effect of Mixing Hydrogen-Argon on Magnetron Sputtered SiO2 Films
Authors: Serikawa Tadashi , Yachi Toshiaki
Published: November 2005

Properties of magnetron sputtered SiO2 films prepared in a 30% hydrogen-70% argon mixed gas have been investigated in comparision with those prepared in argon alone. The results obtained are: (1) The film prepared in argon alone has a remarkable dependence on sputtering pressure, and has a porous film structure with abnormal etching rate, at pressures other than the critical pressure. (2) By mixing hydrogen in the argon, the dependence on sputtering pressure is removed and the SiO2 films are densified.
A Schottky Barrier Type Solar Cell Using Polyacetylene
Authors: Tsukamoto Jun , Ohigashi Hiroji , Matsumura Kiichiro , Takahashi Akio
Published: November 2005

Schottky barrier type solar cells have been fabricated using polyacetylene, (CH)
x
as the semiconductive material. Under illumination from a tungsten lamp source (≃40 mW/cm2), V
sc≃0.4 V, J
oc≃40 µA/cm2 and F.F.≃0.25 were obtained. The energy conversion efficiency is estimated to be 0.2% relative to the energy absorbed within the depletion region.
First Results on a 500 MHz Superconducting Test Cavity for TRISTAN
Authors: Furuya Takaaki , Hiramatsu Shigenori , Nakazato Toshiharu , Kato Takao , Kneisel Peter , Kojima Yuzo , Takagi Akira
Published: November 2005

First results on measurements of a 500 MHz superconducting cavity for TRISTAN are reported. The cavity of spherical shape has been built from 2.5 mm niobium sheet of 99.6% purity by spinning, the main impurity being 1700 ppm of tantalum. Electropolishing and oxipolishing techniques have been applied for surface treatment. No high temperature degassing has been carried out. A Q-value of Q
0=3.4×109 and an accelerating gradient E
acc=4.1 MV/m have been obtained at 4.2 K. At 1.9 K the Q-value has been improved to Q
0\gtrsim1.1×1010.
Effect of Hydrogen Gas on c-Axis Oriented AlN Films Prepared by Reactive Magnetron Sputtering
Authors: Takeda Fumio , Mori Teruki , Takahashi Takakazu
Published: November 2005

AlN films were deposited on glass substrates by reactive dc magnetron sputtering in an atmosphere of pure nitrogen gas or a mixed gas of hydrogen and nitrogen. The AlN films deposited in the nitrogen gas had a c-axis perpendicular to the substrate surface. On the other hand, the film deposited in the gas with hydrogen added showed a c-axis parallel to the substrate surface. Optical transmittance of the parallel oriented films was better than that of the perpendicularly oriented films and there was a great difference in the microstructure of the film surface between these two films.
CsBr Crystalline Fiber for Visible and Infrared Transmission
Authors: Mimura Yoshinori , Okamura Yasuyuki , Komazawa Yoshihisa , Ota Chuichi
Published: November 2005

CsBr crystalline fibers with a high transparency from the visible to the infrared have been prepared from the melt using the MPD technique. The measured losses were about 5 dB/m at 10.6 µm and 8 dB/m at 0.63 µm.
A Method of EPR Imaging: Application to Spatial Distributions of Hydrogen Atoms Trapped in Sulfuric Acid Ices
Authors: Ohno Keiichi
Published: November 2005

A conventional spectrometer was simply modified for the EPR imaging to achieve a maximum magnetic field gradient of about 100 G cm-1 enough to examine distributions of radiation products. The first application of the EPR imaging to spatial distributions of hydrogen atoms trapped in γ-irradiated surfuric acid ices was performed in success, and a large inhomogeneity of the trapped hydrogen atoms was found.
Near Room Temperature CW Operation at 1.70 µm of MBE Grown InGaAs/InP DH Lasers
Authors: Asahi Hajime , Kawamura Yuichi , Ikeda Mutsuo , Okamoto Hiroshi
Published: November 2005

CW operation of InGaAs/InP DH lasers grown by molecular beam epitaxy has been achieved at a heat sink temperature of 6°C at a wavelength of 1.70 µm. This result was achieved by growing DH wafers by using Mn as a p-type dopant source and annealing them at 700°C for one hour.
Mn-doping enabled formation of p-type InP epilayers with room temperature hole concentrations as high as 1×1018 cm-3.
Josephson Effects in Niobium Variable-Thickness Bridges
Authors: Goto Toshinari
Published: November 2005

Oblique deposition and anodization technique have been used to fabricate niobium variable-thickness bridges of length ∼0.2 µm. Very sharp microwave-induced steps are observed and the height changes periodically as the microwave power increases. The bridges are found to show Josephson effects in a wide temperature range and have large I
c
R
n products which are favorable in practical Josephson devices.
Improvement of Dielectric Properties of Plasma Polymerized Styrene with Hydrogen Plasma Treatment
Authors: Sawa Goro , Yamanaka Sanshiro , Nakamura Shuhei , Yamaguchi Shinji
Published: November 2005

Capacitance and dielectric loss tangent of plasma polymerized styrene films are obtained as a function of temperature. The stability of these films is investigated with heating in a vacuum and in air. It was found that the hydrogen plasma treatment is effective in improving and stabilizing the dielectric properties of the plasma polymerized styrene films.
Photoacoustic Detection of Paramagnetic Resonance in Solids
Authors: Hirabayashi Izumi , Morigaki Kazuo , Sano Yoshio
Published: November 2005

Photoacoustic detection of paramagnetic resonance has been carried out for DPPH and Cr3+ ions in Ruby at room temperature. The photoacoustic signal intensity is discussed on the basis of theory of Rosencwaig and Gersho.
Exposure Atmosphere Effect on PGMA Negative Resist Crosslinking by AlKα X-Ray Exposure
Authors: Okada Koichi
Published: November 2005

The crosslinking retardation of poly (glycidyl methacrylate) (PGMA) has been studied in AlKα X-ray lithography. The exposures were performed in a pressure-controlled exposure chamber, using a 10 kW Al source and polyimide masks. PGMA crosslinking is drastically retarded, as the pressure increases from 1 to 104 Pa, by using the mask with a thin gold plating base. It is also shown that PGMA crosslinking is more markedly retarded with longer exposure time, when using this mask.
Thermal Expansion of Potassium Nitrate Films
Authors: Sao G. D. , Tiwary H. V.
Published: November 2005

The principle of two terminal capacitance method has been adopted for the measurement of coefficient of linear thermal expansion of melt-casted polycrystalline films of potassium nitrate. The thermal expansion behaviour resembles closely with the bulk properties. The correction due to areal expansion of electrode film has been incorporated to evaluate true value of linear thermal expansion coefficient from the observed measurement. The thermal expansion anomalies at the two temperatures reveal the ferroelectric region in the cooling cycle. The narrow range of ferroelectric region is due to stress conditions of the sample film. The observations of the distinct changes in the value of α at transition temperatures have been discussed.
Effects of Implantation Dose and Laser Beam Wavelength on Sheet Resistivity Reduction for As-Implanted Poly-Si Films by Q-Switched Nd:YAG Laser Irradiation
Authors: Shibata Kenji
Published: November 2005

Effects of implantation dose and laser beam wavelength on sheet resistivity reduction were studied for As-implanted and Q-switched Nd:YAG laser irradiated 5000 Å thick LPCVD poly-Si films on SiO2. Activated atom ratio (carrier concentration to implantation dose) decreases as the dose increases for the 0.53 µm laser irradiated samples at 0.35 J/cm2, because crystalline recovery depends on the implantation dose. Laser wavelength effect is found for 3×1016 cm-2 implanted sample, and the lower sheet resistivity is obtained by 1.06 µm laser irradiation rather than 0.53 µm one due to advanced recovery without poly-Si surface degradation.
Dielectric and Electromechanical Properties of PbTiO3-La(Zn2/3Nb1/3)O3 Solid Solution Ceramics
Authors: Nomura Shoichiro , Kaneta Kumiko , Kuwata Jun , Tsuchiya Yuzuru , Uchino Kenji
Published: November 2005

Solid solutions in the PbTiO3-La(Zn2/3Nb1/3)O3 system are formed with a perovskite structure up to 70 mol% of La(Zn2/3Nb1/3)O3 content. Dielectric and electromechanical properties of the ceramics have been measured as functions of temperature. The ferroelectric Curie temperature decreases linearly with increasing La(Zn2/3Nb1/3)O3 content. The planar coupling factor k
p at room temperature shows a maximum of 23% in the composition with 13 mol% of La(Zn2/3Nb1/3)O3. A minimum of the temperature coefficient of the planar resonance frequency |Δ
f/f
Δ
T| at room temperature (∼3.7×10-5 K-1) is obtained at 10.5 mol% of La(Zn2/3Nb1/3)O3. By adding a small amount of MnO2 to the ceramics, the order of magnitude of |Δ
f/f
Δ
T| can be reduced to ∼10-6 K-1.
Maximum DC Josephson Current in Magnetic Superconductors
Authors: Yamashita Kazuhiko
Published: November 2005

Maximum dc Josephson current in two magnetic superconductors joined together by a non-superconducting junction is estimated in the temperature region between the superconducting- and magnetic-phase transition temperatures. The magnetic field induced by the persistent current crossing the junction and the persistent current along the junction is quantitized along with the polarization of the local spins of the rare-earth ions. On the other hand, the fluctuations of the local spins weaken the BCS coupling constant. As a result, the current depends strongly on temperature and decreases near the magnetic-phase-transition temperature.
Spinning Plasma Ring and Tilting Instability
Authors: Itoh Sanae-Inoue , Itoh Kimitaka
Published: November 2005

Equilibrium and tilting stability of the spinning plasma ring in reversed field configurations are investigated. The stability window of the toroidal rotation frequency ω, ω0<ω<ωM, is found to be narrow and hardly accessible without a shell.
A Novel Method of Electron Beam Recording on a Si Wafer
Authors: Munakata Chusuke , Miyazaki Masaru
Published: November 2005

A p-type Si wafer covered with a SiO2 film is proposed as a recording medium. When an electron beam of 20 keV irradiates the wafer at a dosage of 2×10-7 C/cm2 or more, surface photovoltage decreases at the points irradiated by the electron beam. Thus, Roman characters recorded with the electron beam have been successfully interpreted with an improved flying-spot scanner.
The Electrochromic Properties of Thermally Decomposed Films of an Organic Tungsten Compound
Authors: Yamanaka Kazusuke
Published: November 2005

The electrochromic properties of thermally decomposed films of an organic tungsten compound are investigated. The films are prepared by spin-coating a toluene solution of hexaphenoxy-tungsten onto transparent conductive substrates and thermally decomposing the coated films in air. Films decomposed at relatively low temperatures (about 200°C) show good electrochromic properties, comparable to ordinary vacuum evaporation films. The write-erase property of the film becomes poorer as the decomposition temperature is increased. This degradation is due mainly to crystallization of the tungsten oxide.
Improved Intrinsic Gettering Technique for High-Temperature-Treated CZ Silicon Wafers
Authors: Tsuya Hideki , Ogawa Ken , Shimura Fumio
Published: November 2005

An improved intrinsic gettering (IG) technique for silicon wafers subjected to a high temperature of at least 1200°C is developed. It has been shown that multi-step annealing from low to high temperatures successively can enhance the IG effectiveness for high-temperature-annealed wafers. Moreover, this technique produces the IG ability even in a low oxygen wafer, ∼11×1017 cm-3.
Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In1-xGaxAs1-yPy on InP
Authors: Takahei Kenichiro , Nagai Haruo
Published: November 2005

Liquid phase epitaxial (LPE) growth of In1-x
Ga
x
As1-y
P
y
crystals lattice matched to InP was studied systematically with a controlled amount of supersaturation for whole range of composition at relatively low temperature (590°C). A region of extremely slow growth rate was found for the quaternary crystal with 1.35 µm band-gap and surfaces of quaternary layers became rough around 1.44 µm. The growth rate of the crystals around 1.35 µm was found to be relatively slow even when the growth temperature is 640°C. Comparison of these phenomena with those observed in AlGaAsSb system suggests the existence of immiscible region in this system below 600°C.
Coloration of Tungsten Oxide Films Induced by Ion or Electron Irradiation
Authors: Morita Hiroshi , Miura Tadao , Washida Hiroshi
Published: November 2005

The coloration of tungsten oxide films induced by energetic ions or electrons has been investigated. According to the simultaneous observation of the AES spectra and the film transmittance, it was found that this coloration phenomenon is mainly based on the extraction of oxygen atoms from the film.
BaF2-CaF2-YF3-AlF3 Glass Systems for Infrared Transmission
Authors: Kanamori Terutoshi , Oikawa Kiyoshi , Shibata Shuichi , Manabe Toyotaka
Published: November 2005

Transparent and colorless glass rods have been obtained from the BaF2-CaF2-YF3-AlF3 system, which consists of 15 to 27 mol% BaF2, 13 to 25 mol% CaF2, 6 to 28 mol% YF3 and 37 to 50 mol% AlF3. Certain physical properties for the rods have been measured. Glass transition temperature, crystallization temperature, melting temperature and thermal expansion coefficient for 22BaF2-22CaF2-16YF3-40AlF3 glass are determined as 430°C, 535°C, 710°C and 16.5×10-6/°C for 300–400°C, respectively. The glass is transparent at 0.23–5.2 µm wavelengths, and shows a refractive index (n
D) of about 1.44, density of about 4.0 g/cm3, Knoop hardness of about 360 kg/mm2, and water solubility of about 0.005 g per 100 g cold water. These glass rods have been able to be drawn into trial fibers of a few meters in length.
Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
Authors: Shigetomi Shigeru , Ikari Tetsuo , Koga Yutaka , Shigetomi Shigenobu
Published: November 2005

Measurements of photoconductivity and photo-Hall effect have been made on Zn-doped p-type InSe in the temperature range from 220 to 330 K. The results are interpreted by a two-carrier model under illumination assuming that Δ
n=Δ
p, where Δ
n and Δ
p are the photogenerated carrier concentration of electrons and holes, respectively. The obtained mobility ratio b is determined as 9.5×10-2
T
0.7, and the temperature dependence of the hole mobility can be well fitted by the model developed by Schmid (Nuovo Cimento B21 (1974) 258).
Synthesis of Nb3Al Thin Films by Magnetron Sputtering
Authors: Tanabe Keiichi , Michikami Osamu
Published: November 2005

Nb3Al thin films with the highest T
c (16.7 K) among as-sputtered films ever reported have been prepared by magnetron sputtering from an arc-melted target. Metallurgical phases, lattice constants, and superconducting T
c's of films were determined as a function of substrate temperature and Ar pressure. Maximum T
c's were found in the films deposited at 650–700°C, which have an A15 structure with a slight amount of Nb2Al phase. For films deposited at Ar pressures lower than 10Pa, a systematic decrease in T
c was found. This result suggests the importance of thermalization and low substrate bombardment in obtaining high-T
c as-sputtered Nb3Al thin films.
Backscattered Electron Signal from Alignment Mark: Experiment and Simulation
Authors: Shiraki Hiroyuki , Aizaki Nao-aki
Published: November 2005

A backscattered electron signal dependence on an alignment mark shape was experimentally studied to clarify the relation between signal and mark shape. Using a simple model for electron scattering, the relation is interpreted consistently and the signal is successfully simulated.
Anomalous Magneto-Optical Kerr Rotation in Sr2FeMoO6
Authors: Shono Keiji , Abe Masanori , Gomi Manabu , Nomura Shoichiro
Published: November 2005

Polar Kerr rotation and optical reflectivity have been measured on hot-pressed Sr2FeMoO6 ceramics in a wavelength range of 0.45–1.5 µm. The Kerr rotation spectrum shows a dispersive-type anomaly around 0.9 µm and the peak value reaches as much as 0.9 degree, which is larger than any room temperature value reported so far on magnetic compounds except alloys such as MnBi (i.e. ∼2 degree). The reflectivity shows an anomaly around the wavelength where the Kerr spectrum shows anomaly, and it may be related to the plasma resonance of the conduction electrons in the metallic Sr2FeMoO6. The Kerr and reflectivity spectra are markedly changed by oxidizing the surface of the sample in air.
Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs
Authors: Watanabe Miyoko Oku , Tanaka Atsushi , Nakanisi Takatosi , Zohta Yasuhito
Published: November 2005

Growth parameter dependence of the concentration of a dominant deep level (E
c-0.84 eV) in undoped and S-doped MOCVD grown GaAs has been studied by DLTS. Considerable attention has been paid to the analysis of DLTS signal in order to obtain the true concentration from the experimental data. It has been found that the concentration of 0.84 eV level is proportional to ([AsH3]/[TMG])1/4. It increases with growth temperature, and decreases with increase in the concentration of doped S. The mole ratio dependence of the 0.84 eV level concentration suggests that the dominant deep level in GaAs is closely related to a Ga vacancy.
A Surface-Acoustic-Wave Continuously-Variable Delay Device with One Unidirectional and Two Uniform Transducers
Authors: Hirabayashi Makoto
Published: November 2005

A SAW device with a group delay time variable over a wide range has been developed. The device utilizes a unidirectional transducer arranged between two uniform transducers. The unidirectional transducer is placed much closer to one of the uniform transducers than the other. The distance between the two uniform transducers was 13 mm. The group delay time varies with the phase difference between the input signals applied to the electrodes of the unidirectional transducer. The variable region of the group delay time was more than 4 µs, and the bandwidth was 370 kHz. Moreover, negative values of the group delay time were observed.
Electron-Beam Evaporated Amorphous Silicon Multiple Cascade Solar Cells
Authors: Schubert C. C. , Fang P. H. , Kinnier J. H.
Published: November 2005

Amorphous silicon solar cells of post-hydrogenated n-i-pn-···i-p as well as p-i-np···n structures have been successively deposited on steel substrates by electron beam evaporation in an industrial vacuum of 10-6 Torr base pressure. A photovoltaic voltage of 300 mV at AMI illumination is obtained per n-p junction, while the photovoltaic current is about 1 mA/cm2 for a large area, 9 cm2, specimen. The low value of the photovoltaic current is probably due to an ineffective hydrogenation and the high resistivity of the electrode.
Frequency-Locking of a GaAlAs Laser to a Doppler-Free Spectrum of the Cs-D2 Line
Authors: Yabuzaki Tsutomu , Ibaragi Akira , Hori Hirokazu , Kitano Masao , Ogawa Toru
Published: November 2005

Preliminary results are reported on the first frequency-locking of a cw GaAlAs laser, operating at room temperature on a single mode, to a Doppler-free spectrum in the saturated absorption of the Cs-D2 line at 852.1 nm.
Coherent Oscillation of Domains of Nematic Liquid Crystals in a DC Electric Field
Authors: Hirata Shoji , Tako Toshiharu
Published: November 2005

It has been observed that the domains of nematic liquid crystals oscillate coherently in a DC electric field. The behavior of this oscillation is different from the fluctuation of Williams domains in an AC electric field. The threshold voltage and the frequency of the oscillation are described.
Effects of Foreign Gases on the KrF Laser Spectra
Authors: Shimauchi Midori
Published: November 2005

Gases such as Ne, Ar, Xe, H2, N2, NF3, SF6, CO, CO2 and O2 were added in various amounts to the standard laser mixture, F2/Kr/He=0.3/7.5/92.2, to investigate their effects on the laser power and the absorption spectrum in the excimer continuum at high resolution. Besides the persistent series previously analysed as a self-absorption (A-series), many absorption lines appeared when a small amount of Xe, H2, N2, HF3 or CO was added to the standard mixture. The A-series was found to be enhanced by the addition of O2, and it was found that this series corresponds to the 2–7 band of the Schumann-Range system.
Model for Cannonball-Like Acceleration of Laser-Irradiated Targets
Authors: Azechi Hiroshi , Miyanaga Noriaki , Sakabe Shuji , Yamanaka Tatsuhiko , Yamanaka Chiyoe
Published: November 2005

A new target is proposed which increases both the laser absorption rate and the hydrodynamic efficiency. This target consists of a light inner shell and a massive outer shell with pinholes for entry of the laser light. The acceleration mechanism is similar to that of a cannonball. A model for this acceleration is presented and compared with hydrodynamic simulations.
1.55 µm GaInAsP/InP Distributed Feedback Lasers
Authors: Mikami Osamu
Published: November 2005

Room temperature operation of 1.55 µm GaInAsP/InP distributed feedback lasers is reported. The laser was fabricated by a single LPE growth cycle on a corrugated substrate. Single longitudinal and transverse mode oscillation was observed up to 1.7 times the threshold current. The temperature dependence of lasing wavelength was about 0.09 nm/deg.
A Consideration of the Chemical Shift in ESCA Spectra from Oxide/Semiconductor Interface
Authors: Mizokawa Yusuke , Iwasaki Hiroshi , Nakamura Shogo
Published: November 2005

Apparent chemical shift of core- and Auger electrons between oxide and substrate GaP are studied by ESCA. The shifts of Ga 3d, P 2p and Ga Auger for the anodic oxide/GaP-interface are larger than those values for the thermal oxide/GaP-interface by about 1 eV, which is interpreted as the difference in the Fermi level pinning position of the substrate, not the chemical structure of oxide. These results suggest that to identify the chemical state of the over-layer on a semiconductor by “chemical shift”, it is necessary to take into account the band bending of the semiconductor surface.