bluuebunny/crossref_metadata_2025 huggingface dataset:
Comparison of Diamond Deposition With Boron or Sulfur Addition
Authors: Haubner Roland
Published: September 2009

Diamond layers with various doping levels of boron are used for electronic or electrochemical applications. Also sulfur was pronounced to act as doping element in diamond but this could not be confirmed. Experimental results show that boron and sulfur influence the diamond deposition but only boron is incorporated into the diamond lattice. The influence of both elements on diamond growth can occur in the gas phase or on the growing diamond surface. Thermodynamic calculations and experimental diamond deposition results were combined to discuss the observed phenomena.
Preparation of Strontium Titanate Film by Low Pressure Chemical Vapor Deposition
Authors: Kon Daisuke , Hashiba Kazuto , Kawashima Tomoyoshi , Akiyama Yasunobu
Published: September 2009

Strontium titanate (SrTiO3; STO) film was prepared by low-pressure chemical vapor deposition (CVD). STO thin film without other crystals could be prepared on a silicon substrate under specific conditions, i.e., Xi = 0.81 at 823 K, 0.62 < Xi < 0.70 at 873 K, 0.67 < Xi < 0.78 at 973 K, and Xi = 0.85 at 1073 K. STO, titanium oxide (TiO2), and strontium-containing films (e.g., SrX; SrCO3, and SrSiO3) grown by CVD at high temperatures (> 873 K) had poor step coverage. However, at low temperatures (< 723 K), although TiO2 and SrX single-component films had poor step coverage, Sr-Ti composite film, which was amorphous, could fill in a microscale trench. At low temperatures, the surface reaction of the precursor used to prepare composite oxide is likely slower than that of the precursor for preparing TiO2 and SrX films.
Formation of Silicon Nitride Layer on Microcrystalline Silicon Thin Films by Hot-wire Chemical Vapor Method using Nitrogen and Hydrogen Gases
Authors: Tabata Akimori , Mazaki Koji , Kondo Akihiro
Published: September 2009

Right after the deposition of hydrogenated microcrystalline silicon (μc-Si:H) thin films, a post-deposition treatment was carried out using the hot-wire chemical vapor technique in N2/H2 atmosphere, to form a nitride layer in the film surface region. The influence of the gas pressure during the post-deposition treatment on the nitride layer formation was investigated. Nitriding at the surface was negligible at 0.1 Torr but was enhanced dramatically with an increase in the gas pressure from 0.1 to 1.0 Torr. Consequently, the surface was almost completely covered with the nitride layer. However, the density of N atoms at the surface reduced with increasing gas pressure from 1.0 to 6.0 Torr. On the other hand, the nitriding on the inside of the films (a depth of 20 nm from the surface) was enhanced by the increase in the gas pressure.
PECVD BCxNy Films from Mixtures of N-trimethylborazine with Hydrogen and Ammonia: Modelling, Synthesis and Characterization
Authors: Sulyaeva Veronika , Kosinova Marina , Golubenko Asya , Rumyantsev Yuri , Fainer Nadezhda I. , Kuznetsov Fedor A.
Published: September 2009

Thin boron carbonitride films were grown by plasma enhanced chemical vapour deposition using mixture of N-trimethylborazine with ammonia or hydrogen. The thermodynamic analysis of the chemical vapour deposition in B-C-N-H system was carried out for temperatures from 300 to 1300 K, a total pressure from 1.33 to 1333 Pa and a wide range of values of H2:B3N3H3(CH3)3 and NH3:B3N3H3(CH3)3 ratios. The effect of the gas phase composition and substrate temperature on the chemical composition and optical properties of the deposits was studied by ellipsometry, scanning electron microscopy, IR-spectroscopy, and optical transmittance spectrophotometry. The low temperature boron carbonitride films were demonstrated to exhibit high optical transparency in the region of 400-2000 nm (transmittance up to 93 %).
In-Situ Infrared Spectroscopy of Hydrocarbons in a Pyrocarbon CVD Reactor
Authors: Kawase Motoaki , Ito Takafumi , Miura Kouichi
Published: September 2009

Pyrocarbon film is synthesized by CVD method. The complex pyrolysis reactions in the gas phase cause the concentration distribution in the reactor. Since the precursor hydrocarbons which react into carbon determine the structure of the resulting film, the hydrocarbon distribution in the reactor should be elucidated for predicting and controlling the product film quality. In this study, the hydrocarbon distribution in a pyrocarbon CVD reactor was measured by infrared spectroscopy. Introducing an infrared beam into the tubular CVD reactor along the central axis of the tube, the infrared absorbance spectrum was measured with varying the diameter of the beam and the space time. By differentiating the measured absorbance both in radial and axial directions, the two-dimensional concentration distribution was obtained successfully.
Modeling of the Gas Dynamic Processes During the Ddeposition of Nanolayers on the Surface of Submicrometer Channels of Porous Solids
Authors: Golovnev Igor F. , Fomin Vasili , Igumenov Igor K. , Kuchumov Boris M.
Published: September 2009

Numerical investigation of the gas dynamic processes that occur during film deposition by means of CVD on the surface of the submicron channels of cylindrical shape was carried out. For this purpose, a combination of Monte-Carlo procedure and molecular dynamics was applied. Molecules were simulated with solid spheres with a given gas kinetic diameter. The interaction between molecules was described using Lennard-Jones potential, while the interaction between the molecules and the walls was described with the repulsive branch of Lennard-Jones potential. Adsorption and energy exchange with the surface of channels were described with the help of Monte-Carlo procedure. A hit of a molecule into a channel through the inlet section was described with Monte-Carlo procedure, too. This allowed us to investigate the effect of pressure and temperature of the gas phase, and surface temperature, as well as the effect of the geometric parameters of the inlet sections on the distribution of the thickness of the formed film along the channel axis.
Effect of Ozone on Deposition of Silicon Oxide Films from Decamethylcyclopentasiloxane
Authors: Alexandrov Sergei , Filatov Leonid A. , Speshilova Anastasya
Published: September 2009

The effect of ozone (O3) on gas phase composition and growth rate of silicon oxide films formed by atmospheric pressure thermal CVD in "decamethylcyclopentasiloxane (DMPSO)-oxygen-ozone" reaction system is described. The influence of process parameters on the growth rate and some properties of the deposited films is discussed. It was demonstrated that silicon oxide films with good dielectric properties can be deposited in the reaction system studied at relatively low temperatures of about 350 {degree sign}C and O3 /DMPSO partial pressure ratio of about 12.
Effect of Ozone on Deposition of Titanium Oxide Films from Tetraisopropoxide
Authors: Alexandrov Sergei , Filatov Leonid A. , Protopopova Vera , Baryshnikova Marina
Published: September 2009

The effect of ozone on chemical vapor deposition of titanium dioxide films from titanium tetraisopropoxide (TTIP) has been experimentally studied. The influence of process parameters on the growth rate, structural and optical properties of TiO2 films deposited in the TTIP-Ar, TTIP-O2-Ar and TTIP-O2-O3-Ar reaction systems have been compared taking into account the results of FTIR measurements of the reaction gas phase. Ozone allows to decrease minimal deposition temperature providing formation of high quality titanium dioxide films to 240 {degree sign}C.
CVD Flow Field Modeling Using the Quiet Direct Simulation (QDS) Method
Authors: Cave Hadley , Lim Chin Wai , Jermy Mark , Wu J. S. , Smith Matthew , Krumdieck Susan
Published: September 2009

In this paper, the Quiet Direct Simulation (QDS) method is used to model the unsteady jet development in a Pulsed Pressure Chemical Vapour Deposition (PP-CVD) reactor. QDS is a novel method of gas flow simulation which is able to compute true-direction fluxes of mass, momentum and energy in a computationally efficient and accurate manner. The scheme is ideal for the simulation of novel CVD processes like PP-CVD which include highly unsteady flow structures which has previously proved extremely difficult to simulate. Here, the axisymmetric QDS solver is outlined and the injection phase of a PP-CVD reactor is simulated.
Impact of Small Deviations in EEDF on Silane-based Plasma Chemistry
Authors: Kovalgin Alexey , Boogaard Arjen , Wolters Rob
Published: September 2009

In this work, we emphasize the importance of using a correct Electron Energy Distribution Function (EEDF) to model chemical reactions in High-Density (HD) low-pressure silane-containing plasmas. We have modeled chemical reactions in Ar-SiH4-N2O-(N2-H2-O2) Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon oxide and silicon nitride layers. For the modeling, we used the experimentally measured EEDF, deviating from the Maxwell-Boltzmann (MB) EEDF. We demonstrate that the use of an inappropriate (i.e. MB in our example) EEDF, only slightly deviating from the experimental (i.e. actual) distribution, could lead to significant discrepancies (1-2 orders of magnitude) between the calculated and actual radical densities.
Growth of ZnO Nanowires by MOCVD: Fundamental Role of the Substrate
Authors: Ternon Céline , Rey Germain , Labeau Michel , Thiré Nicolas , Jimenez Carmen , Rapenne Laetitia , Bellet Daniel
Published: September 2009

ZnO is a unique material that exhibits semiconducting and piezoelectric dual properties. Moreover the possibility of growing ZnO with a nanowire structure opens ways for promising applications in different fields such as solar cells, biosensors or UV detectors. This work reports the relationship between the properties of the substrate and the growth of high aspect ratio ZnO nanowires by pulsed injection Metal Organic Chemical Vapor Deposition (MOCVD). Indeed we demonstrate that the morphology of the substrate surface is one of the fundamental parameter for the nanowires growth without any catalyst. We have investigated various substrates (glass, silicon, SnO2, SiC,...) and have shown that for identical experimental conditions the material deposited can be either textured thin film, randomly orientated nanowires or vertically aligned nanowires.
An Ab Initio RRKM/Master Equation Investigation of SiH4 and GeH4 Decomposition Kinetics Using a Kinetic Monte Carlo Approach
Authors: Cavallotti Carlo , Polino Daniela , Barbato Alessandro
Published: September 2009

The unimolecular decomposition reactions of SiH4 and GeH4 are among the most important gas phase processes active during the CVD of Si and Ge. Despite of this, only few studies are available in the literature on their kinetics. In this work we investigated the decomposition of SiH4 and GeH4 by solving the master equation using a stochastic kinetic Monte Carlo approach. RRKM microcanonical kinetic constants were determined using classic and microcanonical J-resolved variational transition state theory adopting high level ab initio data. The simulation results agree well with experimental data for the decomposition of SiH4 and GeH4, which were found to be deep in their fall off regime even at atmospheric pressure at typical Si and Ge deposition temperatures.
Synthesis of ZnO- CeO2 thin films by APCVD
Authors: Torres-Huerta Aide M. , Domínguez-Crespo Miguel , Brachetti-Sibaja Silvia , Ramírez-Meneses Esther , Hernández-Pérez Maria de los Angeles
Published: September 2009

ZnO-CeO2 films on quartz and galvanized steel substrates were synthesized by atmospheric pressure chemical vapour deposition (APCVD) using Zn- and Ce-acetylacetonate as precursors. The films are attempted to establish the suitability as corrosion resistance coatings. Argon and oxygen were used as carrier and reactive gases, respectively. Structural and morphological characterizations were studied by XRD, SEM and AFM. From these results, apparently the films are not contaminated by carbon atoms proceeding of the precursor. Cerium oxide is not detected because the cerium is integrated in the ZnO lattice, modifying the lattice parameters and morphology of the ZnO; the presence of different structures can be observed: plate-like, flower-like and rod structures. The electrochemical impedance spectroscopy measurements show that this coating could be a good choice to improve the anticorrosion properties.
Synthesis of Transparent ZrO2 Thin Films by MOCVD
Authors: Cárcamo-León Panuncio , Torres-Huerta Aide M. , Domínguez-Crespo Miguel , Ramírez-Meneses Esther
Published: September 2009

ZrO2 films on glass and quartz substrates were synthesized by metalorganic chemical vapour deposition (MOCVD) using zirconium acetylacetonate (Zr(acac)4) as precursor. The reactive and carrier gases were oxygen and argon, respectively. Structural and morphological characterizations were studied by XRD, SEM and AFM. Naked-eye transparent films of cubic ZrO2 phase were obtained, with crystallite size ranging from 10 - 17 nm. Apparently, the films grow in a columnar structure and there is not contamination by carbon atoms. The film mean roughness is low, ranging from 0.674 to 1.33 nm. The films are forming of particles which sizes are ranging from 0.2 to 1.0 µm for the films grown at 700 ºC and from 0.1 to 0.5 µm for the films grown at 500 ºC.
Development of an Automatic Modeling System for Reaction Mechanisms in CVD Processes
Authors: Takahashi Takahiro , Ema Yoshinori
Published: September 2009

In this study, we propose a system that automatically identifies the reaction models involved in the deposition of films on substrates with nanometer- or micrometer-sized trenches by chemical vapor deposition (CVD) processes; automatic modeling is achieved by the system through the analysis of the experimental data of the cross-sectional shapes of the deposited films. The reaction models, which comprise various deposition species and surface reactions with different values of sticking coefficient, were determined both quantitatively and qualitatively on the basis of chemical kinetics. We demonstrated that the system could successfully model the reaction mechanisms.
The Application of Advanced Spectroscopic Diagnostics with Chemometric Modelling to Optimise Thin Film Properties Grown by Atmospheric Pressure PECVD
Authors: Sawtell David , Sheel David W. , Martin Philip A.
Published: September 2009

This paper reports the use of a multiple technique approach to monitor the atmospheric pressure plasma-enhanced chemical vapour deposition (PECVD) of silica films on glass. In-line FT-IR spectroscopy and optical emission spectroscopy have been combined with electrical measurements to investigate the plasma during the deposition process. The experiments have been carried out as a chemometric design so as to derive statistical models linking the key input variables to the measured film properties. Initial results confirm the viability of this approach for improved process understanding, process control and enhanced design capabilities. Some comments have also been made on the chemistry of the process.
Epitaxial Heterostructures of KNbO3/LaNiO3/SrTiO3 and KNbO3/La1-xKxMnO3/SrTiO3 : MOCVD preparation and properties
Authors: Korsakov Igor , Mankevich Aleksey , Tsymbarenko Dmitry , Makarevich Artyom M. , Murzina Tatiana , Kaul Andrey
Published: September 2009

Epitaxial conducting electrodes (60-300 nm thick) of LaNiO3, La1-xKxMnO3 and ferroelectric KNbO3 thin films were deposited by MOCVD using thd-volatile precursors on SrTiO3 and MgO single crystalline substrates. Influence of epitaxial strain on properties is discussed. Ferroelectric properties of the title heterostructures were characterized by hysteresis measurements, piezo-response force microscopy and second harmonic generation.
In Situ Monitoring of the Initial Nucleation for the Formation of Uniform InGaAs Micro-discs on Si
Authors: Deura Momoko , Kondo Yoshiyuki , Hoshii Takuya , Takenaka Mitsuru , Takagi Shinichi , Nakano Yoshiaki , Sugiyama Masakazu
Published: September 2009

InAs is desirable for a single nucleus in every selected growth area in micro-channel selective-area MOVPE on Si(111) substrates. In order to obtain the uniformity in the crystal shape of InGaAs micro-discs, we have devised a multi-step growth which starts from the InAs nucleation step. In this study, we have investigated the dependence of InAs nucleation on the partial pressure of an In source (PTMIn) with in situ monitoring to cover the Si surfaces by the flat InAs crystals. Since the initial nucleation of InAs is governed by the supersaturation of an In precursor on the Si surface, higher PTMIn is necessary. On the other hand, smaller PTMIn is suitable for burying the growth area by lateral growth. Therefore, we should modulate PTMIn during the InAs growth: PTMIn should be decreased as soon as the initial nucleation occurs.
Innovative M(Hfa)2•TMEDA (M=Cu, Co) Precursors for the CVD of Copper-Cobalt Oxides: an Integrated Theoretical and Experimental Approach
Authors: Gasparotto Alberto , Barreca Davide , Devi Anjana , Fischer Roland , Fois Ettore , Gamba Aldo , Maccato Chiara , Seraglia Roberta , Tabacchi Gloria , Tondello Eugenio
Published: September 2009

This work is focused on a joint experimental and theoretical characterization of M(hfa)2•TMEDA complexes [M=Cu, Co; hfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; TMEDA=N,N, N',N'-tetramethylethylenediamine], innovative CVD precursors for Cu-Co oxides. The structural, vibrational and thermal properties of the above compounds, as well as their fragmentation pathways, have been thoroughly analyzed by Fourier Transform Infrared Spectroscopy (FT-IR), Electrospray Ionization Mass Spectrometry (ESI-MS) and tandem Mass Spectrometry (MS/MS), ThermoGravimetric Analysis (TGA), Differential Scanning Calorimetry (DSC). Results obtained by the above techniques have been integrated by ab-initio Density Functional Theory (DFT) calculations. The most relevant results, with particular regard to CVD applications of the target compounds, are presented and discussed.
Novel N-Containing Precursors of Nickel(II) for Film Deposition by MOCVD
Authors: Zherikova Kseniya V. , Morozova Natalia B. , Kil'metiev Aleksandr S. , Zelenina Ludmila N. , Semyannikov Pyotr P. , Gelfond Nikolay V. , Chusova Tamara P. , Igumenov Igor K.
Published: September 2009

The synthesis of volatile nickel(II) complexes with N-containing ligands like CH3C(O,NCH3)CH2C(NR)CH3 (R - H, CH3) was performed. The substances were identified by various physico-chemical methods. The thermal behavior of the compounds in the solid state was investigated by the method of thermogravimetry and difference-scanning calorimetry in vacuum and helium. Using the Knudsen method and static method the temperature dependences of saturated vapor pressure were studied, the standard thermodynamic parameters of sublimation and evaporation process were calculated. By means of high temperature mass spectrometry the thermolysis of complex vapor was studied in vacuum and gas by-products were determined. One of the complexes has been used as precursor for the film deposition. The films obtained were investigated by using XRD analysis.
CVD of Pure Copper Films from a Novel Amidinate Precursor
Authors: Krisyuk Vladislav , Aloui Lyacine , Prud'Homme Nathalie , Sarapata Bartosz , Senocq François , Samelor Diane , Vahlas Constantin
Published: September 2009

This paper reports on the use of a novel copper(I) amidinate compound [Cu(i-Pr-MeAMD)]2 to produce copper films in conventional low pressure CVD using hydrogen as reducing gas-reagent. Copper films were deposited on steel, silicon and SiO2/Si substrates. Their composition, morphology, conductivity and growth rate were investigated in the temperature range 200 - 350 oC at total pressure of 10 Torr. XRD and EPMA confirmed that the films are composed of polycrystalline copper metal without carbon and nitrogen impurities.
Zinc Malonate Based Precursors for MOCVD of ZnO
Authors: Bekermann Daniela , Pilard Diane , Fischer Roland , Devi Anjana
Published: September 2009

This work deals with the development of alternative metal organic precursor compounds for the growth of zinc oxide by MOCVD. In this regard we focused on fluorine-free zinc complexes using chelating ligands. A series of Bis(malonato)zinc(II) complexes was synthesized and characterized by elemental analysis (EA), mass spectrometry (MS), proton and carbon NMR spectroscopy. The precursor properties were investigated by solubility and sublimation studies, differential thermal analysis (DTA) and thermogravimetry (TG). Density Functional Theory (DFT) studies were performed to investigate the influence of the ligand environment on the heat of formation of the precursors and their reactivity towards humidity.
Industrial Applications of Atomic Layer Deposition
Authors: Ritala Mikko , Niinistö Jaakko
Published: September 2009

This year marks the 35th anniversary of the Atomic Layer Deposition (ALD) technology. While the development of ALD was motivated and successfully demonstrated by thin film electroluminescent display production, otherwise the industrial use of ALD remained marginal for more than two decades. Recently the interest toward ALD has increased remarkably and the technique is currently one of the most rapidly developing fields of thin film technology. Major driver for this development has been semiconductor industry, but ALD has found industrial applications also in other areas, like magnetic recording heads, optics and protective coatings. This paper reviews the current application areas of ALD and makes some remarks about new potential applications for ALD.
Low Pressure Chemical Vapor Deposition as a Tool for Deposition of Thin Film Battery Materials
Authors: Oudenhoven Jos , Van Dongen Teus , Niessen Rogier , De Croon Mart , Notten Peter
Published: September 2009

Low Pressure Chemical Vapor Deposition was utilized for the deposition of LiCoO2 cathode materials for all-solid-state thin-film micro-batteries. To obtain insight in the deposition process, the most important process parameters were optimized for the deposition of crystalline electrode films on planar substrates. Also the electrochemical activity of the obtained LiCoO2 films was demonstrated.
A Conformal Oxide Liner for Through Silicon Vias by Pulsed SA-CVD Deposition
Authors: Sleeckx Erik , Schaekers Mark , Durr Emma
Published: September 2009

In 3D integration technology, TSVs (Through Silicon Via) are used to electrically interconnect stacked chips. The preferred isolation process is SA-CVD O3/TEOS based oxide because it is conformal and has a high deposition rate at low temperature. A drawback is a high TSV density dependency that leads to a non-uniform liner thickness across the chip and along the whole wafer. Using a pulsed flow 400{degree sign}C O3/TEOS process, we obtained a superior result in terms of conformality and structure density dependency for via's with aspect ratio 10 (2x20 and 5x50μm). The process strongly outperforms standard processes without pulsing.
Novel CVD Strategies and Novel Chemical Precursors Enabling Low Temperature Epitaxy of Si and Si:C Alloys
Authors: Bauer Matthias , Thomas Shawn
Published: September 2009

In this paper we will discuss non-traditional chemical precursors for carbon-doped Silicon (Si:C) that enable improved manufacturability through higher growth rates and new deposition temperature regimes commensurate with the drive to lower thermal budgets of integration of CMOS and DRAM platforms. Among the silicon precursors to be discussed are dichlorodisilane (DCDS; Si2Cl2H4), dichlorosilane (DCS) and Silcore® (Si3H8). New carbon precursors disilylmethane (DSM, CH2(SiH3)2 and propylene (C3H6) are discussed and compared with conventional (mono-)methylsilane (MMS; SiH3CH3). For high volume manufacturing, high selective epitaxial growth rates are necessary for high throughput and low cost of ownership. Both, high GR and low temperatures enable high substitutional carbon levels [C]sub in dilute Si:C alloys. Advantages and disadvantages of different CVD strategies such as a co-flow process, a cyclic deposition/etch (CDE) process and a "hybrid" process are discussed.
Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method
Authors: Saito Takeyasu , Izumi Kaname , Hirota Yuichiro , Okamoro Naoki , Kondo Kazuo , Yoshimura Takeshi , Fujimura Norifumi
Published: September 2009

Amorphous carbon (α-C) films were deposited on PbLaZrTiOx (PLZT) capacitors by a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. The α-C films of 20nm prepared with different deposition pressure, methane concentration and RF power were investigated as a hydrogen barrier layer for ferroelectric random access memory (FeRAM) integration. The α- C films contained atomic hydrogen as shown by Fourier transform infrared spectrometry (FT-IR) and exhibited a possibility to suppress the hydrogen degradation of ferroelectric properties.
Large Area PECVD Technology
Authors: Choi Soo Young , White John M.
Published: September 2009

The rapid growth of the Active Matrix Liquid Crystal Display market since the late 1990's has been driven by demand for ever larger displays that are widely affordable. Therefore, LCD manufacturers have steadily driven their industry toward lower and lower manufacturing cost per unit area of display. The current generation, Generation 10, which is just starting, is based on a glass substrate that's over 9m2 in size. This paper discusses the challenges that were faced and how they were overcome to produce high-quality PECVD layers at high rates on such large substrates. Also discussed is how the PECVD technology that was developed for AMLCD manufacturing, was adapted to manufacture Thin Film Silicon Solar panels 5.7m2 in size. By scaling up the panel size, the cost per watt of energy from a square meter of panel has been made commercially viable in today's photovoltaic energy market.
Characterization of Phosphorous and Boron Doped Silicon Oxynitride Prepared by Plasma Enhanced Chemical Vapor Deposition
Authors: Sun Fei , Sengo Gabriël , Driessen Alfred , Wörhoff Kerstin
Published: September 2009

5% B2H6/Ar and 5% PH3/Ar were introduced to the plasma enhanced chemical vapor deposition process of silicon oxynitride. The bond configurations and refractive indexes of the boron/phosphorous (B/P) doped layers were characterized by Fourier transform infrared spectroscopy and the prism coupling method, respectively. The effect of annealing on the N-H bonds, which mainly contribute to undesired optical losses around 1500 nm wavelength, has been studied. Compared to undoped samples, significant reduction of N-H bonds was observed in the as-deposited B/P doped layers. The reduction of N-H bonds during annealing was found to depend primarily on the applied temperatures rather than on the duration of the annealing process. Complete elimination of N-H bonds has been achieved by temperature treatment of samples at 700åC for 3 hours.
Multi-scale Simulations for Plasma Processing of Thin Films
Authors: Bhoj Ananth , Shah Kartik , Megahed Mustafa , Kothnur Prashanth , Kinder Ron
Published: September 2009

An inherent challenge to achieving improvements in thin film deposition processes is that requirements at the feature scale have to be somehow "tuned in" by modifying reactor scale geometry and process parameters. The simulation approach described allows for the solution of species fluxes and energies at the wafer surface as a function of process parameters. The reactor scale model addresses coupled flow, chemistry and plasma physics such as power deposition, volumetric reactions, species transport and deposition on chamber walls. The feature scale model computes growth of the film inside a trench. The objective of this work is to develop a comprehensive model for the high-density plasma chemical vapor deposition of silicon dioxide films in an inductively coupled plasma reactor. Using gas phase and surface reaction mechanisms from literature, trends in deposition characteristics with process variables such as inductive power are compared to experimental data in a commercial reactor.
Investigation of Optical Properties and Photoluminescence of Amorphous Silicon Carbide in a-SiC/Si3N4 Quantum Well Structures Fabricated by PECVD Technique
Authors: Kamyab Lobna , Rusli  , Yu Ming Bin , He Lining , Dua Manik
Published: September 2009

a-SiC:H/a-Si3N4:H multilayer quantum well structures have been fabricated using the PECVD technique. It consists of 16 alternating layers of a-SiC (2 and 4 nm thick) as the well layers and a-Si3N4:H as the barrier layers. The multilayer structures of the samples have been verified using TEM micrographs. The samples were studied using the spectroscopic ellipsometry (SE) and photoluminescence (PL) techniques. The SE data for the multilayers have been successfully fitted, from which the optical properties of the thin a-SiC layer have been determined. The effects of quantum confinement on the absorption coefficients and refractive indices of a-SiC:H have been investigated. The results are correlated to the PL spectra of the samples.
Long and Aligned Multi-Walled Carbon Nanotubes Grown on Carbon and Metallic Substrates by Injection-CVD Process
Authors: Delmas Mathieu , Pinault Mathieu , Porterat Dominique , Reynaud Cécile , Mayne-L'Hermite Martine
Published: September 2009

Dense, aligned and clean multi-walled carbon nanotubes (MWCNT) can be obtained by aerosol-assisted catalytic CVD process. A successful extension of this method has been performed in order to obtain MWCNT growth even on carbon fibres and metallic surfaces, using a modified injection-CVD process. This process involves two stages, including fibre pre-treatment by depositing ceramic sub-layers followed by CNT growth, that both take place in the same reactor in only one global and fast step. Fibrous, porous or flat carbon substrates, as well as metals, can easily be treated with this process. It is possible to tune the composition (e.g. SiO2 or ZrO2), thickness and morphology of sub-layers. The characteristics of CNT obtained on such covered substrates are compared with those of CNT obtained on uncovered substrates or on quartz substrates and appear to be very similar to those obtained on quartz substrates, in terms of length, density and by-products yield.
Hybrid Aerosol Assisted Atmospheric Pressure Chemical Vapour Deposition: A Facile Route Toward Nano-Composite Thin Films?
Authors: Saeli Manfredi , Piccirillo Clara , Parkin Ivan , Binions Russell
Published: September 2009

A hybrid chemical vapour deposition strategy is presented as a facile route for the production of vanadium dioxide nano-composite thin films. The effect of the inclusion of gold nano-particles and the use of a surfactant molecule; tetraoctylammonium bromide (TOAB), is discussed. The films are fully characterised and it is shown that micro-structural changes lead to an enhancement of thermochromic properties, whilst gold nano-particles lead to a change in the films optical properties. Optical data is used in energy modelling studies to elucidate the films potential as an energy saving coating in architectural glazing.
Silicon Oxynitride Layers Fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) for CMOS Devices
Authors: Mroczyński Robert , Beck Romuald
Published: September 2009

This work is devoted to the technology and characterization of silicon oxynitride layers (SiOxNy) formed by Plasma Enhanced Chemical Vapor Deposition (PECVD). In the course of this work thermal stability of deposited layers was also examined. Expected changes in structure, chemical composition and electro-physical properties of the obtained layers were investigated by means of spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and electrical characterization of manufactured test structures (metal-insulator-semiconductor (MIS) capacitors and MISFETs). Selected process parameters were chosen to fabricate SiOxNy layers which were introduced into MIS devices with double gate dielectric stack (based of hafnium dioxide). Electrical characterization of such MIS structures with PECVD silicon oxynitride have shown a feasibility of application of obtained system in non-volatile semiconductor memory (NVSM) devices.
Stabilized Zirconia-Based Materials for Solid Oxide Fuel Cells (SOFC) obtained by MOCVD and Aerosol-CVD
Authors: El Habra Naida , Bolzan Marco , De Zorzi Chiara , Favaro Monica , Casarin Maurizio , Sada Cinzia , Rossetto Gilberto
Published: September 2009

Dense and porous films of nanostructured zirconia stabilized in the cubic-fluorite phase by aliovalent metal oxides (MgO, CaO, Sc2O3, and Y2O3) have been deposited through a conventional MOCVD and an Aerosol-CVD processes, respectively. The two methods allowed the obtainment of materials with peculiar morphological and microstructural features for different applications in SOFC. The compositional (SIMS, EDS), structural (XRD) and morphological (FEG-SEM) analyses confirmed the growth of both dense, for solid electrolyte, and porous, as component for anode, stabilized cubic ZrO2 depending on the employed deposition method.
Deposition of TiO2 Films by Liquid Injection ALD using New Titanium 2,5-dimethylpyrrolyl Complexes
Authors: Davies Hywel , Jones Anthony , Black Kate , Bacsa John , Chalker Paul , Marshall Paul A. , Heys Peter N. , Afzaal Mohammad , O'Brien Paul
Published: September 2009

The new titanium 2,5-dimethylpyrrolyl complexes [(2,5-Me2C4H2N)Ti(NMe2)3] and [(2,5-Me2C4H2N)Ti(OPri)3]2 have been used for the deposition of TiO2 films by liquid injection ALD. TiO2 films deposited at a substrate temperature of 250oC contained residual carbon at levels of 4.1 - 5.9 at.%
TiO2 Strelitzia-like Hybrid Nanocomposites Obtained by a Synergic Combination of Vapor Techniques
Authors: Battiston Simone , Bolzan Marco , Fabrizio Monica , Gerbasi Rosalba , Guerriero Paolo , Miorin Enrico , Mortalò Cecilia , Pagura Cesare , Visentin Francesca
Published: September 2009

The preliminary results concerning the preparation of a new hybrid nanocomposite material are here presented. The process was achieved by various steps starting from the deposition of anatase TiO2 on a powder of single wall carbon nanohorns (SWCNHs) via MOCVD by using titanium tetraisopropoxide Ti(OiPr)4 as the precursor, then the dispersion and sonication of the obtained hybrid material in water, followed by the deposition onto a conducting ITO substrate, which finally led to the growth of the strelitzia flower-like titania via RF reactive magnetron sputtering employing a metal titanium target. The new hybrid nanocomposite material was characterized by scanning electron microscopy and X-ray diffraction. The particular experimental conditions in which this singular growth was observed, are discussed.
Surface modification of PMMA with DLC using RF-PECVD
Authors: Barhai P. K. , Sharma Rishi , Yadav Anoop Kr , Singh Ashwini Kr , Gaur Himani , Buck Volker
Published: September 2009

DLC films are deposited on PMMA substrates using Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF-PECVD) technique with the variation of RF power at a constant pressure of 5 × 10-2 mbar. Acetylene diluted with argon is used as a precursor for the deposition of DLC films. No external heating is provided during deposition. Deposited films are characterized using Raman spectroscopy, FTIR spectroscopy, Optical contact angle (OCA) technique and AFM. Raman spectra shows a G peak near 1550 cm-1 and a D peak near 1320 cm-1. FTIR spectra shows a peak near 2900 cm-1 corresponding to C-H stretching modes and peaks below 2000 cm-1 corresponding to C-C modes and C-H bending modes. Surface morphology of the films has been studied with AFM and the result shows the formation of uniform films. Optical contact angle (OCA) shows that DLC coated PMMA is more hydrophobic compared to uncoated surface.
AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
Authors: Henry Anne , Lundskog Anders , Palisaitis Justinas , Ivanov Ivan , Kakanakova-Georgieva Anelia , Forsberg Urban , Persson Per , Janzén Erik
Published: September 2009

AlxGa1-xN multiple quantum wells (MQW) were grown on AlN epilayer grown on 4H-SiC substrate. The growth was performed without interruption in a horizontal hot-wall MOCVD reactor using a mixture of hydrogen and nitrogen as carrier gases. The precursors were ammonia, trimethylaluminum and trimethylgallium. Results obtained from X-ray diffraction and infra-red reflectance were used to obtain the composition of the films when growing simple AlxGa1 xN layer. Visible reflectance was used to evaluate the thickness of the films. Finally the MQW parameters as thicknesses and composition variation were obtained by scanning transmission electron microscopy and demonstrated an agreement with the growth parameters used
Photocatalytic Activity Dependence on the Structural Orientation of MOCVD TiO2 Anatase Films
Authors: Gerbasi Rosalba , Bolzan Marco , El Habra Naida , Rossetto Gilberto , Schiavi Luca , Strini Alberto
Published: September 2009

This paper is concerned with the study of MOCVD anatase film growth with the aim of assessing the link between the TiO2 surface morphology and the photocatalytic properties of the films, in particular related to the decomposition of organic contamination in the atmosphere. We have found a relationship between the structural properties of TiO2 films deposited by MOCVD at 400{degree sign}C for differing deposition times, and the corresponding photocatalytic activity which resulted to be different several times depending on the film thickness. The photocatalytic activity measurements were carried out using ethylbenzene at 50 µg m-3 in humidified air.
Growth of Carbon Nanotube Layers in a Thermal CVD Reactor on Substrates Prepared by Catalyst Spray Deposition
Authors: Traxler Margarethe , Haubner Roland
Published: September 2009

One major problem for implementation of CNTs in new materials is their production reproducibility. In this work the catalyst distribution on the substrate and the growth of aligned CNTs were investigated. To achieve fine grained catalyst distribution solutions containing Fe, Co and Ni were sprayed by an air-brush on glass substrates. The optimal spray conditions were investigated. CNT deposition followed in an air pressure flow reactor. Ethylene as carbon source and water in concentrations of 75 to 1500 ppm referring to the carbon concentration were used. The deposits were investigated by SEM and TEM.
Deposition of Ir Nanostructured Thin Films by Pulse CVD
Authors: Gelfond Nikolay V. , Semyannikov Pyotr P. , Trubin Sergey V. , Morozova Natalia B. , Igumenov Igor K.
Published: September 2009

Nanostructured thin iridium films were deposited by pulse CVD. Tris(acetylacetonato)iridium(III) was used as the precursor. The thermochemical properties of this precursor were determined by mass spectrometric monitoring its vapour phase interaction with heated surfaces both in vacuum and in atmospheres of H2 and О2. The results obtained provided a guide for understanding which pulse CVD process conditions to use for growing thin films of iridium using hydrogen or oxygen as gas reactant. Deposited iridium film thicknesses were varied from 5 to 25 nm. Iridium films were characterized by means of SEM, AFM, HRTEM and XPS.
HfO2-High-k Dielectric for Nanoelectronics
Authors: Smirnova Tamara P. , Kuznetsov Fedor A. , Yakovkina Lubov , Kaichev Vasiliy , Kosyakov Victor , Lebedev Mikhail , Kichai Vadim
Published: September 2009

Thermodynamic consideration of Hf-HfO2-SiO2-Si system, cross-sectional HR-TEM, XPS, IR-spectroscopy and Null ellipsometry technique were used to determine the chemical composition and structure of the HfO2 thin films deposited on Si. The interface layer consists of the hafnium silicate with smoothly varying chemical composition along the film thickness. Formation of the IL occurs as during the HfO2 film deposition so at annealing of the HfO2/SiO2/Si structure. Kinetics of the hafnium silicate formation was studied by IR-spectroscopy.
Preparation of Iridium Thin Film by Pulse CVD from Ir(acac)(CO)2
Authors: Semyannikov Pyotr P. , Morozova Natalia B. , Zherikova Kseniya V. , Trubin Sergey V. , Igumenov Igor K. , Gelfond Nikolay V.
Published: September 2009

Iridium thin films were deposited by pulse CVD with using dicarbonyl(acetylacetonato)iridium Ir(acac)(CO)2 as a precursor. Precursor was characterized by DTA and mass spectrometry; effusion Knudsen method was used for determination of thermodynamic parameters of sublimation process. By means of high temperature mass spectrometry precursor vapor decomposition was studied in vacuum, oxygen and hydrogen. Analysis of gaseous by-product composition has shown that the main products of reaction are acetylacetone, СО, СО2 and С2Н3О of presumably radical character. Mechanism of thermal transformations of precursor molecules at interaction with surface was supposed. Ir films deposited at substrate temperature between 240 and 300{degree sign}C were characterized by XPS and AFM. Ir in the films is in metal and chemically associated states, size of Ir particles is 4-20 nm.
Initial Stages of Thermally and Hot-Wire Assisted CVD Copper on SiLK® and LTO Substrates Activated with Mercaptopropyl Triethoxysilane Self-Assembled Monolayers
Authors: Papadimitropoulos Giorgos , Speliotis Thanassis , Arapoyianni Aggeliki , Davazoglou Dimitris
Published: September 2009

The initial stages of thermal and hot-wire assisted CVD (HWCVD) of copper were studied with atomic force and scanning electron microscopy. The substrates used were Si (100) wafers covered either with low-temperature silicon oxide (LTO) or with SiLK® on which self-assembled monolayers (SAMs) of (3-Mercaptopropyl)trimethoxysilane (MPTMS) were applied. CupraSelect® (commercial name of hexafluoroacetylacetonate Cu(I) trimethylvinylsilane) was used as precursor and delivered in the reactor with the aid of a direct-liquid injection system. Thermally grown Cu films follow the initial topography of the substrate thus amplifying the roughness of the initial topography. HWCVD yields smoother films because the growth of Cu is due to entire molecules of the precursor, similarly to thermal CVD, and to activated, easily dissociated, species produced near the hot filament in the gas phase. Once trapped on surface irregularities these species probably dissociate and the deposited metal smooth out the surface yielding smoother Cu films.
Capacitance-Voltage Analysis of ZrO2 Thin Films Deposited by Thermal MOCVD Technique
Authors: Mih Thomas A. , Paul Shashi , Milanov Andrian P. , Bhakta Raghunandan , Devi Anjana
Published: September 2009

The capacitance-voltage (C-V) characteristics of thin films of ZrO2 deposited by thermal metal-organic chemical vapour deposition (MOCVD) have been analyzed. The films were grown at three different temperatures (500, 550 and 600 ºC) and 1 mbar pressure from a novel monomeric zirconium amide-guanidinate complex [Zr(NEtMe)2(guanidinate)2]. The true capacitance was determined from measurements made at different frequencies in order to account for the series and shunt parasitic resistances during C-V measurements. Films grown at 500 and 550 ºC showed no hysteresis while those grown at 600 ºC exhibited a very small hysteresis window ≈0.16 V for O2 flow of 100 sccm and ≈0.19 V for 50 sccm O2 flow. A very small voltage shift is also obtained for the device under 10 hr voltage stress. These preliminary in-depth electrical results suggest that quality ZrO2 can be grown from the novel [Zr(NEtMe)2(guanidinate)2] complex precursor paving the way for their use as future gate dielectrics.
Low-Temperature VUV-Stimulated MO CVD Process of Palladium Layer Deposition
Authors: Kuchumov Boris M. , Koretskaya Tat'yana P. , Shevtsov Yuriy V. , Trubin Sergey V. , Zharkova Galina I. , Danilovich Vladimir S. , Igumenov Igor K. , Kruchinin Vladimir
Published: September 2009

Attention to low-temperature processes of metal film deposition is due to the necessity to obtain electrically conducting layers on different surfaces including those containing polymeric regions. The use of a highly volatile precursor, for example Pd(hfa)2, with simultaneous stimulation of its decomposition in the atmosphere of hydrogen using the VUV radiation of excimer lamps with the wavelength 116 to 126 nm allows one to decrease the temperature for the deposition of mirror metal films. In the present work, the composition and morphology of palladium films are examined by means of scanning electron microscopy, ESCA, spectral ellipsometry, depending on the temperature of substrate and precursor, deposition time, flow rates of hydrogen and argon. The nature of the substrate, its activation by VUV radiation allow selective deposition of palladium films on combined substrates (metal - polymer) with a complicated spatial relief.
Selective Growth of Carbon Nanotubes on Printed Fe3O4 Nanoparticles
Authors: Haubner Roland , Schwinger Wolfgang , Dittert Bernd , Schöftner Rainer
Published: September 2009

For selective growth of Carbon Nanotubes (CNTs) or Carbon Nanofibres (CNFs) a print technique was used to distribute the catalyst on the substrate surface. Suspensions of Fe3O4 nano-particles (NPs) (~ 15-20 nm) in chloroform (CHCl3) were prepared and printed by a soft nano-imprinting lithography process (NIL) on quartz and silicon substrates. After printing and evaporation of the solvent the catalyst distribution on the substrate surfaces was investigated. After different types of pre-treatments the hot-filament CVD followed depositing nanotubes and nanofibres.
Synthesis and Thermal Stability of Nanocomposite SiCxNy:H Films from Cycle Siliconorganic Precursor
Authors: Fainer Nadezhda I. , Rumyantsev Yuri , Kesler Valeri , Maximovski Eugene , Kuznetsov Fedor A.
Published: September 2009

The excellent transparent in wide region of spectra, nanocomposite SiCxNy:H films were synthesized by RPECVD using hexamethylcyclotrisilazane in mixture of helium and nitrogen in the temperature range of 373-1073 K. The analysis of FTIR, XPS and Raman spectroscopy results showed that low temperature films are hydrogenated silicon oxycarbonitride. There are the formation of chemical bonding between Si, C, N atoms with predominate surrounding of Si atoms by nitrogen atoms and the absence of hydrogenous bonds in high temperature films. C-V and I-V measurements showed that SiCxNy:H films are low-k dielectrics. Thermal annealing of these films leads to their densifying, ordering of structure and increase of nanocrystals' size.
Pulsed MO CVD Processes of MgO Layer Deposition from Mg(thd)2
Authors: Kuchumov Boris M. , Shevtsov Yuriy V. , Semyannikov Pyotr P. , Filatov Egor S. , Igumenov Igor K.
Published: September 2009

Dipivaloylmethane was used as a precursor to deposit MgO layers on polished silicon (100) plane in a hot-wall pulsed MO CVD reactor. A detailed investigation of the thermal parameters of the precursor was carried out to optimize the conditions for film deposition experiments. Temperature dependencies of vapour pressure were measured using the flow procedure and Knudsen's method with the mass spectrometric identification of the composition of the gas phase. The processes of Mg(thd)2 decomposition in vacuum, in oxygen and in water vapour were investigated by means of high-temperature mass spectrometry. The major products of precursor decomposition were established; the mechanism of its decomposition was proposed. Investigation of the deposition of MgO layers was carried out within the substrate temperature range 350-450оС, source temperature 190÷210оC in the presence of oxygen. The resulting layers were characterized using AFM, ellipsometry, XRD. The morphology, structure and secondary electron emission of MgO films were investigated.