bluuebunny/crossref_metadata_2025 huggingface dataset:
Anomalous Discharging Currents due to Space Charge
Authors: Mizutani Teruyoshi , Kaneko Kazue , Ieda Masayuki
Published: November 2005

Discharging currents caused by the migration of space charge (e.g. due to electrons injected from the electrode) after removing an applied field were numerically calculated under various conditions. The calculated discharging currents flowed in the opposite direction to the charging current under the condition of ohmic electrodes, while the blocking electrodes resulted in the anomalous discharging currents flowing in the same direction as the charging current. The behaviors of the anomalous discharging currents are discussed in detail and they are in good agreement quantitatively with the experimental data obtained for high-density polyethylene. The temporal changes in the distributions of space charge and internal field, and the contribution of diffusion to the currents were also revealed.
Photoluminescence and Photoconduction in the System (CdIn2S4)1-x-(In2S3)x
Authors: Nakanishi Hisayuki , Miyashita Hideo , Endo Saburo , Irie Taizo
Published: November 2005

Emission spectra of photoluminescence in mixed crystals of CdIn2S4 and In2S3 were studied at liquid N2 temperature. The emission spectra decomposed into four main emission bands, the peak energies of which were about 1.80 eV, 1.60 eV, 1.45 eV, and 1.35 eV for CdIn2S4 and accompanied with a shift to a lower photon energy with an increase of In2S3 content. Photoconductivity and excitation spectra in the alloy system were also measured at liquid N2 temperature. A model for the mechanism of the emission of CdIn2S4 for the two emission bands in the higher energy side is proposed from these experimental results.
Straining Apparatus for Dynamic Observation by X-Ray Topography
Authors: Nishino Yoichi , Suzuki Masami , Tono Tamotsu , Saka Hiroyasu , Imura Toru
Published: November 2005

In order to carry out the dynamic observation of dislocation behaviour by X-ray topography, two kinds of straining apparatus have been developed; one for room-temperature deformation and the other for high temperatures. By using these apparatuses and a TV-VTR system for X-ray topography, continuous video recording of the dynamic behaviour of dislocations in a stressed crystal can be made in the temperature range from room temperature to 1173 K. In-situ deformation experiments of Cu-4 at.%Al single crystals showed that the first slip initiates at a stress level of about two-thirds of the yield stress and that the propagation speed of the slip line at this stress level is about 1 mm·s-1. It was also shown in high-temperature deformation of silicon single crystals that the deformation proceeds by the propagation of plastic zones developed from strain centers existing in the surface layer of the specimens.
UHV-IMMA Development and Application to Hydrogen Detection
Authors: Satake Tohru , Tsukakoshi Osamu , Shimizu Akira , Komiya Souji
Published: November 2005

An ultra high vacuum ion micro-probe mass analyser (UHV-IMMA) has been developed. Effective differential pumping together with other UHV technique design considerations enables observations to be made in an ultra high vacuum of better than 1×10-7 Pa. The UHV-IMMA was used to observe the hydrogen content ratio in hydrogenated amorphous silicon (a-Si:H) and the peak height ratio H+/Si+ observed was close to proportional to the hydrogen content ratio H/Si obtained by IR. The UHV-IMMA was found to have the capability of allowing observations of the hydrogen content in solids at less than 0.01 at.% to be made.
Josephson Oscillation in Resistive SQUID with Large Critical Current
Authors: Kimura Tomisi , Mitsuzuka Akio
Published: November 2005

Pulse-like current oscillations were observed in an RSQUID with a large critical current. The frequency of the oscillations was equal to 1/n times the fundamental Josephson frequency, where n is an integer. It seems that the observed subharmonic oscillation were caused by the transition of multi-flux-quanta in the Josephson oscillation, not by the relaxation oscillation.
Behaviour of Laser-Produced Plasma in a Uniform Magnetic Field–Plasma Instabilities
Authors: Okada Shigefumi , Sato Kohnosuke , Sekiguchi Tadashi
Published: November 2005

A nearly-cylindrical column of laser-produced plasma has been generated successfully in a uniform magnetic field. The radius of the column initially increases and then decreases (bouncing motion). In the vicinity of the outer surface of this plasma column, where there is a steep density gradient with scale length shorter than the local ion Larmor radius, an azimuthal modulation appears in the plasma luminosity. This is indicative of flute-like instability with the azimuthal wave number k
⊥∼4×103
B
0.8 (in MKSA units). The dispersion equation based upon the linearized Vlasov equation with the local approsimation is derived and the occurrence of the lower-hybrid-drift instability is predicted. Fairly good agreement is found between theory and experiment.
Electrochemical Characteristics of TiS2, ZrSe2 and VSe2 in Secondary Lithium Battery
Authors: Ōnuki Yoshichika , Inada Rumiko , Tanuma Sei-ich , Yamanaka Shōji , Kamimura Hiroshi
Published: November 2005

The layered transition metal dichalcogenides of TiS2, ZrSe2 and VSe2 were found to react reversibly with lithium in electrochemical cells. The energy densities of these cathode materials were determined to be 500, 240 and 250 W·h/kg for one lithium intercalation per unit cell, respectively and 420 W·h/kg for two lithium intercalation per unit cell of VSe2.
It was found for ZrSe2 that more than two lithium ions per unit cell can be intercalated in the first discharge when the cell temperature is increased to 60°C, while one lithium ion can be intercalated at 20°C.
Electrical Contact Properties of Metal-Chalcogenide Amorphous Semiconductor Systems
Authors: Okano Shuichi , Suzuki Makoto , Suzuki Masakuni
Published: November 2005

Several metals were found to form rectifying contact with chalcogenide amorphous films. Photovoltaic effects were also found for samples exhibiting rectifying phenomena. Measurements of the frequency dependence of parallel resistance and capacitance revealed that a high resistivity layer with large thickness existed in the contact region between the amorphous films and metals with a strong inoization tendency, which should be referred to as the rectifying layer. This layer is though to be the alloy layer which was formed by a chemical reaction at the interface. The alloying processes due to the chemical reaction were inferred from the observation of a small short circuit current.
Isothermal Recovery of Electrical Resistivity in Aluminum Immediately after Deformation
Authors: Haruyama Osami
Published: November 2005

Isothermal recovery curves of the electrical resistivity in deformed aluminum (99.995 at.% purity) were measured immediately after elongation. Specimens were elongated by about 4, 7 and 13%. A peak indicating the reverse recovery of resistivity was observed at adequate aging temperatures except for about 4% elongation. Experimental data were analyzed using the rate equation, where the clusters smaller than quadrivacancy were taken into account. The correspondence of the experimental results with the calculated ones is briefly discussed.
Single Crystalline Silicide Formation
Authors: Saitoh Shuichi , Ishiwara Hiroshi , Asano Tanemasa , Furukawa Seijiro
Published: November 2005

Formation conditions of single crystalline silicide films on Si substrates by solid phase reactions were investigated using MeV He+ Rutherford backscattering and channeling techniques and transmission electron microscopy. It was shown that single crystalline silicide films (NiSi2, CoSi2 and Pd2Si) can be formed on (111)Si when metals are deposited onto clean surfaces and they are annealed without exposure to air. Channeling minimum yields in the backscattering analysis were 0.03–0.04 in NiSi2 and CoSi2 films thinner than 150 nm and 0.06 in Pd2Si films thinner than 100 nm. In the transmission electron microscopy measurement, grain boundaries were not observed at least in an area of 100×100 µm2, but several defects like twins and dislocations were observed in some silicide films. The resistivity of silicide films was also measured by the four-point probe method, and the resistivities of CoSi2, Pd2Si and NiSi2 were about 15 µΩ-cm, 25 µΩ-cm and 35 µΩ-cm, respectively.
Transport Studies of Copper Iodide
Authors: Verma B. K. , Pratap V. , Lal H. B.
Published: November 2005

Measurements of thermoelectric power (\varTheta) and electrical conductivity (σ) of copper iodide, which becomes superionic conductor above 642 K, have been reported both in α and β phases. A sharp change in magnitude of thermoelectric power has been observed at 642 K corresponding to β to α phase transition. The result may be expressed by the relations

β-CuI, \varTheta= -(0.20±0.02)(10^3/T)+(0.11\mp0.02)_mV/K300–520 K
α-CuI, \varTheta= -(0.098±0.005)(10^3/K)+(0.417 \mp0.005)_mV/K642–850 K.

From conductivity data the activation energy (E
a) for conduction in α and β phases of CuI is found to be 0.13 and 0.368 eV respectively and heat of transport (q
Cu+) of cationically disordered Cu+ ion in α-phase and interstitial Cu+ ion in β-phase have been found to be 0.098 and (0.20-h/2) eV respectively; h being the heat of formation of Frenckel defect pair in β-phase. It has been shown that the result on α-CuI supports the extended lattice gas model of superionic conductors.
Mechanism of Spectral Sensitization of ZnO Coadsorbing p-Type and n-Type Dyes
Authors: Yoshimura Tetsuzo , Kiyota Kohei , Ueda Hiroo , Tanaka Masao
Published: November 2005

We systematically measured photocurrents in ZnO layers coadsorbing p- and n-type dye. On the basis of our results, the mechanism of the spectral sensitization arising from the combination of p- and n-type dyes is discussed. We found that the photocurrents are proportional to e-Δ
E/k
T
, where Δ
E is the difference in energy between the conduction bands of the p- and n-type dyes. Our results lead us to believe that the “sensitization with two dyes” induced by combining the p- and n-type dyes, is caused by the injection of electrons from the n-type dye layer into the ZnO layer via the p-type dye layer over the barrier of Δ
E.
Planar-Type Negative Resistance Diodes with Control MOS Gates
Authors: Choe Il Yong , Akiba Yukio , Noda Katsufumi , Kurosu Tateki , Iida Masamori
Published: November 2005

The control mechanism of turnover voltage V
to effected by voltage applied to a MOS gate is studied both experimentally and analytically. The observed turnover voltage V
to is increased with an increase in the magnitude of negative gate voltage. The gate effect becomes stronger as location of the gate comes closer to the n+-region. A model of negative resistance in p+-i-n+ diode with a MOS gate is constructed by combining a double-injection model with the regional approximation method. In this model, turnover voltage V
to is assumed to depend strongly on the density of free electrons which is easily controlled by the gate voltage. The electrical characteristics obtained exprimentally are in good agreement with those predicted based on the present model.
Observations of Dynamic Behaviour of a Linear Turbulently-Heated Plasma Using Microwave Scattering
Authors: Asada Osamu , Yoshioka Kazuo , Inoue Akira , Tsukishima Takashige
Published: November 2005

The dynamic behaviour of a linear turbulently-heated plasma is studied using 70 GHz microwave scattering. Electrostatic ion waves with frequencies close to but lower than the lower hybrid frequency are intially observed around the periphery of the plasma column. It is found that these waves propagate towards the axis. The time-resolved wave number spectra, obtained for two frequency components from many scattering data for various scattering angles, show that the wave number at peak amplitude decreases with time, accompanied by broadening of the spectral distribution. Physical pictures corresponding to the observed results are discussed. It is also demonstrated that a phase-sensitive homodyne detection system can be used for measuring asymmetric spectra.
Causes for the Appearance of Fringes in Cholesterics, Williams Domains and Chiral Smectic C Liquid Crystals
Authors: Kondo Katsumi , Fukuda Atsuo , Kuze Eiichi
Published: November 2005

Fringes observed in cholesterics (Ch), Williams domains (WD) and chiral smectic C liquid crystals (Sm C*) were studied systematically. Generally the fringes are clearly focused as real and imaginary images on planes just above the upper surface and near the lower surface of the samples. Additional images, sometimes defocused, may also be observed inside the samples. Three causes for this have been considered: (1) wave surface distrotion, (2) ray deflection from the wave normal that occurs in anisotropic media and (3) the effect of optical neutral lines. The fringes in Ch are due to cause (1) and those in WD to causes (1) and (2). All the causes, especially (2) and (3) apply to Sm C*. The importance of (2) is shown systematically for the first time.
Effect of Helium and Hydrogen Atoms on the Formation of Voids in Quenched Aluminium
Authors: Watanabe Kazuto , Morishita Yumi , Yamaguchi Hiroyuki , Yoshida Sho
Published: November 2005

Dilute aluminium alloys and 5-nine aluminium were quenched in a vacuum, helium or hydrogen atmosphere, and the formation of the secondary defects was examined with an electron microscope. Helium and hydrogen atoms clearly affect the formation of voids and the promotive effect of helium is smaller than that of hydrogen. Using a set of rate equations, the promotive effect of both kind of atoms is discussed from the differences in their solubility, migration energy and the binding energy between a vacancy and a void containing a helium or hydrogen atom.
Doping Effect of Oxygen on Horizontal Bridgman Grown InP
Authors: Pak Kangsa , Nakano Tetsuo , Nishinaga Tatau
Published: November 2005

The doping effect of oxygen in melt grown InP was investigated by both Hall measurement and thermodynamical analysis. In the case when an oxygen doped crystal was grown only in the high-temperature zone, the carrier concentrations were reduced considerably due to the decrease of Si concentration in the InP crystal, and this was explained satisfactorily by the thermodynamical calculations on InP-In2O3 system. Hall measurement up to a high temperature revealed that the oxygen atoms did not behave as shallow nor deep impurities in the crystal.
Numerical Estimation of the Dependence of Dielectric Constant of BaTiO3 Thick Films on Grain-Size Distribution
Authors: Yamashita Kimihiro , Yamazaki Shozo , Koumoto Kunihito , Yanagida Hiroaki
Published: November 2005

An exponential function of the grain size was assumed in calculating the apparent (total) dielectric constant of BaTiO3 thick films with the average grain diameter known. The function was tested and estimated experimentally, for cases where the grain sizes were calculated using the following methods; the two-dimensional diameter analysis, the Schwartz-Saltykov method and Oel's method for converting a two-dimensional grain distribution to a spacial grain sizedistribution.
Using the present assumed function and the extended logarithmic mixing rule to combine the dielectric constants of individual grains, the grain-size distribution-dependence of the dielectric constant was successfully simulated. From the simulated results it was concluded that the dielectric constants of coarse grains of thick films increase with increase of grain size in the range from room temperature up to 135°C.
Coherent Excitation of Multilevel Atomic Systems
Authors: Tsukakoshi Motowo
Published: November 2005

Interaction of multilevel atoms with intense radiation fields is treated in a simplified model using a semiclassical theory. Steady-state level-populations in four-level and five-level systems are calculated. It is found that population inversion appears between the highest level and an intermediate level under intense fields. The absorption lineshape of the transition between the highest two levels in a five-level or a six-level system is calculated in a weak probe-field approximation. The lineshape for the five-level (six-level) system splits into four (five) peaks at high excitation intensities.
Thermal Quenching Effect of Transient Photocurrents in Evaporated Thin Films of β-Copperphthalocyanine under an Ultra-High Vacuum
Authors: Mizuguchi Jin
Published: November 2005

The temperature dependence of photocurrents was investigated in evaporated thin films of β-copperphthalocyanine in the near ultraviolet and visible regions under an ultra-high vacuum. Thermal quenching of the photocurrent was observed to begin at about 120°C and the photocurrent was completely quenched at about 150°C. The photocurrent re-appeared as the temperature was decreased. The quenching mechanism is discussed in terms of the extrinsic dissociation of excitons, which generates free electrons and holes. Thermal desorption of the adsorbed gases, which is a key factor in carrier formation, causes thermal quenching. The thermal quenching was found to be a characteristic of thin films.
p-CuGa1-xInxS2/n-ZnSe Heterojunction by LPE Method from In Solution
Authors: Takenoshita Hiroshi , Nakau Tanehiro
Published: November 2005

p-CuGa1-x
In
x
S2/n-ZnSe heterojunction was made by the LPE method from the In solution of solute CuGaS2 and solvent In, though a p-CuGaS2/n-ZnSe heterojunction was not obtained. The reflection electron diffraction pattern from the interface indicates an epitaxial growth. The measurements of EPMA have shown that Zn and Se decrease monotonically, and Cu, Ga and S increase monotonically, from the substrate to the over-growth layer. Indium from the solvent showed a monotonic increase from the substrate to the over-growth layer. The maximum temperature T
m of 650°C and cooling rate of 0.5°C/min were taken. The epitaxial layer is represented by the formula CuGa1-x
In
x
S2, where x was 0.16 for T
m of 650°C. It is suggested that a complete series of solid solutions (CuGa1-x
In
x
S2)1-y
-(2ZnSe)
y
alloys is formed. The thickness of the mixedcrystal layer was 4.9 µm.
Bound Exciton Emission of Zinc Selenide
Authors: Satoh Shiro , Igaki Kenzo
Published: November 2005

Bound exciton emission and excitation spectra of the I2 and I3 lines were measured at 2 K for zinc selenide single crystals heat-treated in controlled partial pressures of constituent elements as a function of zinc or selenium pressure. The intensity of the I2 lines due to ClSe donors and InZn donors decreases with the increase in selenium pressure. Intensity variation of the I2 lines is considered to be concerned with the out-diffusion of Cl and In from crystals, the formation of the SA-center or the occupation of the Se site by Cl.
Pinning Force of a Nonideal Superconductor Containing Pins with Large Interaction Forces. II. Low Pin Density
Authors: Matsushita Teruo
Published: November 2005

The global pinning force density was calculated for a superconductor containing strong and dilute pins using the statistical method. The resultant pinning force density was found to be proportional to both the elementary pinning strength and the density of pins. This means that the pinning force density is describable by the linear summation model. The present theoretical approach is compared with the one by Campbell which predicts direct summation for very strong pins. Satisfactory agreement was obtained between the present result and the results of previous experiments qualitatively and quantitatively.
Studies on Phase Transitions by AC Calorimetry
Authors: Hatta Ichiro , Ikushima Akira J.
Published: November 2005

As examples of the best use of the so-called AC calorimetry technique, several results are described from various viewpoints. The behavior of heat capacity at ferroelectric, antiferroelectric and structural phase transitions is surveyed from the standpoint of critical behavior, of jump at first order transition, or of a sensitive metod of finding a new phase transition. In two- and three-dimensional antiferromagnets, the critical behavior is discussed with an emphasis on the crossover from the Ising to the Heisenberg system. In the two-dimensional antiferromagnets, the crossover is revealed from the dependence of the critical amplitude on the strength of the Ising-like anisotropy. A hyperscaling relation is proposed at nematic-to-smectic A transition of liquid crystals. Finally, studies of the frequency dependence of heat capacities in the denaturation of proteins and in the order-disorder transition of alloys are reported.
Experimental Confirmation of Characteristic Augular Dependence at Low Intensity Levels in Rayleigh Scattering from Monodomain Nematics
Authors: Akiyama Ryuichi , Hasegawa Masaki , Fukuda Atsuo , Kuze Eiichi
Published: November 2005

To check the validity of the de Gennes formula and the accuracy of the scattering measurements, we have compared the recorded data with the calculated results for the scattering angular (\alphax) dependence of the Rayleigh line intensity, I
(O,E), I
(E,O) or I
(E,E) obtained by using a homeotropically-aligned cell. Here the superscripts refer to the ordinary or extraordinary polarization of the incident and scattered light. By tilting the cell, we can change the angle φ between the incident light and the director from -30° to 30°, keeping the director in the scattering plane. I
(O,E) and I
(E,E) show minima at α=φ and α=2φ, respectively, as predicted and the stray light levels are much less than one percent of those used ordinarily in determining the elastic constant ratios. In addition, the tilting is very effective to increase I
(E,E), which allows us to measure the line width due to the mode 1 director fluctuations accurately using the homodyne technique.
Method of Evaluating Tilt Domain in a Twisted Nematic Cell
Authors: Umeda Takao , Miyashita Takao , Tsutsumi Yasuyuki , Nakano Fumio
Published: November 2005

The conditions for the formation of tilt domains in a twisted nematic cell have been studied in relation to the rubbing direction, the distribution of electric field at the electrode edges and the pretilt angle of liquid crystal molecules.
The method of evaluating tilt domains in a twisted nematic cell using an electrode consisting of several segments with various angles to the rubbing directions was devised and some experiments were carried out.
It is estimated that tilt domains are never induced when the pretilt angle is more than 1.2 degrees in a liquid crystal cell in the case where the angle between the upper surface rubbing direction and the lower surface rubbing direction, which is called the twisted angle, is 80 degrees.
The Transition from Dendritic to Lamellar Structures in Hypoeutectic Fe-FeSi Alloy Films
Authors: Asahi Nobuo
Published: November 2005

Hypoeutectic Fe-FeSi alloy films, in the composition range from 29 to 33 at%Si, were unidirectionally solidified under temperature gradients in a melt at the liquid-solid interface from 20 to 90 K/cm, at solidification rates from 7.2×10-5 to 2.5×10-3 cm/s.
The solidification structures are classfied into two types, lamellar and dendritic structures. The critical condition for the transition from dendritic to lamellar structures is expressed in the following relation;
G/R=-2.7×105
C
0+9.0×106

where G is the temperature gradient in the melt at the liquid-solid interface, R is the solidification rate and C
0 is the initial composition of Si of the melt.
Mechanical Damage Gettering Effect in Si
Authors: Sawada Renshi , Karaki Toshiroh , Watanabe Junji
Published: November 2005

The gettering effectiveness of microdefects in Si wafer with mechanical damage introduced deliberately is investigated in relation to the degree of damage and the stress field around the damage. It is found that gettering action continues for 8 hours or more, although slower, when the damage is applied to a deep part of the wafer. This is due to the fact that the dislocations introduced deep in the wafer continue to serve as sinks for microdefect nuclei. The gettering effect is also greatly dependent on the microdefect density of a wafer.
High Sensitivity Short-Path Monitoring of Trace Gases Employing PbSnTe Tunable Diode Laser
Authors: Sano Hiroya , Koga Ryuji , Kosaka Megumi , Shinohara Koji
Published: November 2005

A system for atmospheric trace gas monitoring is described. The absorption spectrum in the infrared region of a specific gas is involved. A lead-salt diode laser is employed for the tunable light source and the short optical path of less than one meter allows the equipment to be portable. Fast measurement can be performed thanks to be built-in microcomputer and specially developed electronic system. Reliability is achieved because a correlational algorithm is calculated by the computer avoiding the ambiguity of the absolute laser frequency. Gas-density data is obtained every few seconds.
Experiments were executed for methane and a sensitivity of 0.3 ppm·m with S/N=1 was attained being limited by parasitic etalon fringes. A higher sensitivity down to 0.01 ppm·m is possible provided that a transversally mono-modal laser is employed.
Effect of Neutral Gas and Impurity on Loss of Injected Ions during Slowing Down
Authors: Murase Kenya
Published: November 2005

Fast ions produced by neutral beam injection are lost mainly by charge exchange with the cold neutral gas and pitch-angle scattering into an orbit loss region. The loss of injected ions due to these processes during slowing down is discussed by obtaining a numerical solution of the fast-ion distribution function. The effect of impurity ions on the containment properties of injected ions is investigated, as well as the effect of charge exchange with the cold neutral gas. The loss of injected ions due to orbit loss is also investigated. Furthermore, an analytical treatment on the enhancement of angular diffusion by impurity ions is also described.
Simple and Low Cost Multichannel Spectral Measurement System for Weak Light
Authors: Matsuuchi Kazuhiko , Satoh Jun-ichi , Hongo Shozo , Bō Hiroshi
Published: November 2005

We have developed a simple and low cost multichannel spectral measurement system using an inexpensive MOS image sensor that can be used for spectral measurements of stationary weak light without an image intensifier. To perform weak light measurements, the sensor is cooled to -60°C and a long integration time (up to 20 min) can be achieved. The detectable power of our system has been evaluated at about 10-13 W/cm2 at a wavelength of 6328 Å. Some comparisons with commercially available detection systems are given and several spectra obtained by our system are presented to show its performance.
A New Development in the Method of Measurement of Reciprocity-Law Failure and Its Application to Screen/Green-Sensitive X-Ray Film Systems
Authors: Fujita Hiroshi , Uchida Suguru
Published: November 2005

Since it has been confirmed by experiment that the intensity of X-rays varies approximately as the focus-film distance (FFD) to the minus 2.12th power, the X-ray intensity can be changed by varying the FED. It is shown in this paper that two types of reciprocity failure curve, density vs. exposure time for constant exposure and relative exposure vs. exposure time for constant density, can easily be obtained from several time-scale characteristic curves taken experimentally for several FED's in the rare-earth screen-film systems used. Only low-intensity reciprocity failure is present for exposure times of more than about 0.1 sec for one film, but both low-intensity and high-intensity reciprocity failures occur in the other one. The effects of reciprocity failure on the H & D curves can be seen in the shape of the curves and the relative speed.
Alignment of Nematic MBBA on the Cleavage Surface of Ferroelectric TGS
Authors: Nakatani Noriyuki , Hirota Minoru
Published: November 2005

The alignments of molecules of nematic liquid crystal MBBA on the ferroelectric antiparallel domain revealed on the cleavage surface of TGS are investigated using a polarizing microscope. On the positive domain, the alignment is one in which the directors are in a plane nearly perpendicular to the (101) plane of the TGS and are titled at about 55° to the TGS surface. On the negative domain, the alignment is homogeneous with the directors nearly perpendicular to the (001) plane.
Liquid Phase Epitaxial Growth of InAs1-x-yPxSby on InAs Substrate
Authors: Kobayashi Naoki , Horikoshi Yoshiji
Published: November 2005

InAsPSb quaternary alloy, lattice-matched to InAs substrate, is promising material for 3–4 µm wavelength optical sources. This quaternary alloy was grown on (001) InAs substrate by liquid phase epitaxy. The lattice constant for this epitaxial layer, grown by the equilibrium cooling method, increases along the growth direction, because P content in this quaternary decreases and Sb content increases along the growth direction. The InAs-InP-InSb pseudoternary phase diagram was also calculated. From these results, it was shown that in order to obtain a quaternary solid with higher P and Sb concentration under lattice-matching to InAs substrate condition, lower growth temperature is required.
Carrier Traps in Poly-p-Xylylene Thin Films
Authors: Takai Yoshiaki , Itoh Tomimasa , Mizutani Teruyoshi , Ieda Masayuki
Published: November 2005

Carrier traps in poly (p-xylylene), PPX thin films (0.7 µm) polymerized from the vapour phase are discussed from an analysis of the X-ray-induced thermally-stimulated current (TSC). PPX polymerized at room temperature is a semicrystalline polymer with a monoclinic lattice (α-form). The TSC spectrum from α-form PPX shows five groups of TSC peaks in the range -180 to 200°C. Thermal treatment of α-form PPX above 230°C producel β-form PPX with a trigonal crystal lattice, causing a change in the TSC spectrum, that is, a decrease in the TSC peaks at -150∼-90°C, -40°C, 120°C and 160°C. Annealing the α-form PPX while retaining its α-form crystal lattice increased the TSC's from 120–160°C and produced a new peak at 50–90°C which was not changed by further annealing, or even by the crystalline phase transition. Considering these facts, these traps were considered to be molecular irregularities at the surface or in the surface layer of the crystallite, molecular defects in the crystallite, and irregular molecules.
Application of Amorphous Silicon to WO3 Photoelectrochromic Device
Authors: Shizukuishi Makoto , Shimizu Isamu , Inoue Eiichi
Published: November 2005

A new optical memory device consisting of a solid-state electrochromic device (ECD) and a photoconductive amorphous silicon(a-Si) thin film was investigated. The photoelectrochromic structure, i.e. glass/ITO/a-Si/Cr2O3/Cr2O3·V2O5/WO3/Au was devised in order to record an optical image with sharp contrast. When the a-Si layer was illuminated by a He-Ne laser (6328 Å) of 1.6 mW output power under the application of a D.C. voltage, the color of the WO3 layer became blue (H
x
WO3) and remained as it was after the electric field was removed. By changing the polarity of the D.C. voltage, the coloration-discoloration cycle could be repeated many times under illumination with light, with a response speed corresponding to that of the ECD.
Effect of Electron-Hole Recombination on the Performance of Bi12SiO20 Optical Image Converter
Authors: Minemoto Takumi , Toda Toshihiro
Published: November 2005

The characteristic curve showing transmission versus exposure for an image converter using Bi12SiO20 single crystal was analyzed by a simple model in which crystal absorption, carrier diffusion, and recombinations between electrons and holes were considered. The variation of transmission with exposure was represented by a system of equations. The system of equations was solved numerically by an iterative technique using a computer. Results of the theoretical analysis were compared with experimental results. It was shown that the electron-hole recombination was important in the performance of the device.
High Power Efficient Dye Laser Pumped by a Copper Vapor Laser
Authors: Huang Zhen-Guo , Namba Kazumi
Published: November 2005

A high power efficient dye laser pumped by a copper vapor laser was developed with longitudinally pumped geometry and using a jet stream. An average output power of 0.86 W for the Rh6G dye was obtained with an efficiency of 31%.
Optimization Studies on the Plasma Position Control System in TORIUT-4 Tokamak
Authors: Yoshida Zensho , Kikuchi Mitsuru , Mori Masahiro , Miyata Kenji , Okano Kunihiko , Nakanishi Masahiro , Kobata Tadasuke , Inoue Nobuyuki , Uchida Taijiro
Published: November 2005

We have investigated the analysis and construction of the position control system in a tokamak device. The plasma free boundary equilibrium has been numerically analyzed, especially under the influence of image flux from the ion core. Using this equilibrium analysis, we have studied the free boundary axisymmetric dynamics of plasma coupling with the external circuits. Experimentally, we have measured the step responses of the plasma position to the externally-applied error field, and sufficient agreement with the numerical analysis was obtained. The construction of the optimized control system has been studied and examined experimentally.
Study of the Rectangular-Like Output Waveforms of a 720 kV Coaxial Marx Generator
Authors: Kubota Yūsuke , Kodaira Jun-ichi , Miyahara Akira
Published: November 2005

The mechanism of generation of unique output voltages of a low-inductance coaxial Marx generator, developed for producing relativistic electron beams or ion beams, is investigated using an equivalent circuit in which two kinds of stray capacitance are taken into account. One of these is that which exists between each Marx module and the Marx outer conductor, and the other is that which exists between the two electrodes of the spark gap. The former capacitance is found to be useful for generating rectangular-like output voltages, which the latter capacitance is found to be harmful.
An Algorithm for Electron Depth-Dose Distributions in Multilayer Slab Absorbers
Authors: Tabata Tatsuo , Ito Rinsuke
Published: November 2005

An algorithm to evaluate depth-dose distributions produced by plane-parallel electron beams normally incident on two- or three-layer slab absorbers has been developed. It is based on a simple model of electron penetration across the interface, and makes use of empirical equations previously formulated as well as ones newly developed. Distributions obtained by the algorithm have been compared with available experimental and Monte Carlo results for electrons of incident energies from 0.1 to 10 MeV, showing good agreement in most cases. The algorithm is considered to be valid for incident energies from 0.1 to 20 MeV and for absorbers consisting of slabs of atomic numbers from about 5.6 (polystyrene) to 82.
Strain Measurement in Optical Fiber Cable Using Resistance Wire
Authors: Katsuyama Yutaka , Mitsunaga Yutaka , Ishida Yukinori , Ishihara Koushi
Published: November 2005

A resistance wire method is proposed for measuring the longitudinal strain in the glass fiber in an optical cable. In this method, the strain is evaluated by measuring the resistance change of a wire coated with the same material as the glass fiber. It is confirmed that the resistance change rate Δ
R/R is proportional to the strain. An optical cable containing both a coated resistance wire and coated fibers was manufactured, and the strain in the cable was measured under tension, bending and vibration. The results are useful for the mechanical design of fiber cable, and the resistance wire method was found to be a simple and useful method of estimating the strain in the fibers inside such a cable.
AC Loss in Superconducting Wires in a Rotating Magnetic Field. I. Low-Frequency Loss in a Wire in a High Transverse Field
Authors: Noda Minoru , Yamafuji Kaoru
Published: November 2005

The magnetic behavior of a nonideal type II superconducting wire in a rotating magnetic field is discussed with the aid of the critical-state model. The discussion in this paper is confined to the case where an external magnetic field He rotates very slowly in a plane perpendicular to the wire axis with a magnitude much larger than H
p, the value of H
e at which a flux front reaches the center of the wire. The present paper provides analytical expressions for the flux distribution, the magnetization, the AC loss, and the critical angle at which the steady state is reached.
Orientation Dependence of Divacancy Production and Annealing in Germanium
Authors: Ito Kazuyoshi , Ito Takashi , Watanabe Yoshiyuki , Oka Masahiro
Published: November 2005

Undoped germanium samples were used to prevent the participation of impurity atoms in the defect formation process, and the number of traps associated with divacancy-like defects only was monitored. The samples were irradiated with 1.5 MeV, 1.35 MeV, 1.25 MeV and 0.8 MeV electrons in the crystallographic directions <111>, <110> and <100>. The ratios of the number of defects after <111> irradiation to those after <110> and <100> irradiation by 1.5 MeV electrons, R
110 and R
100, were 2.0 and 1.9 respectively. It was evident that <111> irradiation resulted in greater defect production than <110> or <100> irradiation. The anisotropy ratios R
100 were about 2.4 for 1.25 MeV, 2.0 for 1.35 MeV and 1.9 for 1.5 MeV electrons, becoming larger at lower energies.
Crystallization of CuGaS2 from CdCl2 and CdI2 Solutions
Authors: Höbler Hans-Joachim , Kühn Günther , Tempel Alfred , Neumann Hans
Published: November 2005

Phase diagrams of the systems CuGaS2-CdX2 (X=Cl, I) were determined by weight loss measurements and differential thermal analysis. Both systems show eutectic behaviour. By flux growth needle- or rod-like crystals having {101} and {112} faces and its axis parallel to the <111> direction were obtained. This crystal morphology can be explained accounting for the difference in the I–VI and III–VI bond strengths. Cathodoluminescence spectra are measured on both as-grown and annealed crystals.
Frictional Properties of Nickel and Copper Implanted Low Carbon Steel Plates
Authors: Iwaki Masaya , Hayashi Hisashi , Kohno Akio , Yoshida Kiyota
Published: November 2005

A study has been made of the frictional properties of nickel and copper implanted steel plates. Ion implantation was performed with doses of 1×1015–3×1017 ions/cm2 energies of 50–200 keV. The friction coefficients of Ni and Cu implanted specimens, measured at atmospheric room temperature with a Bowden-Leben type friction testing machine, had a tendency to increase as the total dose increased and the acceleration energy decreased. Concentration profiles were measured by secondary ion mass analysis in order to investigate the element concentration which contributes to the frictional properties. The results suggest that the amount of implanted ions remaining in the surface layer (0–400 Å) is of first importance in the frictional properties of Ni and Cu implanted steel plates.
Effects of Fluxes on Particle Growth of ZuS Phosphor
Authors: Kawai Hiroji , Abe Tomohiko , Hoshina Teruhiko
Published: November 2005

The particle growth of ZnS: Cu, Al phosphor during firing has been investigated in order to obtain information about the effects of fluxing additives on the growth mechanisms. When type-I fluxes (MgCl2, CaCl2 and NaCl) are used, the particle size increases rapidly in the early stages of firing, and saturates when the firing time is increased further. Type-II fluxes (CsCl, KCl, KI and NaI) induce a further large increase in the particle size after a plateau period following the initial growth. The optimum quantities of fluxes to facilitate the particle growth most effectively are in the region of several tenths of a mol% to several mol%. The particle growth mechanisms are discussed using the theory of sintering.
LPE Growth of In1-xGaxP1-zAsz (z ≦0.01) on (1 0 0) GaAs Substrates and Its Lattice Constants and Photoluminescence
Authors: Mukai Seiji , Matsuzaki Masatoshi , Shimada Jun'ichi
Published: November 2005

The LPE Growth of In1-x
Ga
x
P1-z
As
z
(z ≦0.01) on (1 0 0) GaAs substrates is described with stress on the relation between the compositions of source melts and the quality of grown crystals. The melt in equilibrium with In1-x
Ga
x
P0.99As0.01 lattice-matched to GaAs at 785°C is found to consist of 0.87 at.% of Ga, 2.66 at.% of P, 0.05 at.% of As and the rest In. Lattice constants strained in the direction of growth of the layers grown from melts supersaturated by 4°C were pinned near to a value 0.3% larger than that of GaAs substrates. However, the pinning was not observed for wafers grown from melts supersaturated by more than 8.6°C. The photoluminescence of the wafers is also reported.
Sintering of Ultrafine Metal Powders. II. Neck Growth Stage of Au, Ag, Al and Cu
Authors: Iwama Saburo , Hayakawa Kenji
Published: November 2005

The neck growth stage in the sintering of ultrafine powders of Au, Ag, Al and Cu has been studied by electrical resistance measurement and electron microscopy. A formula for the electrical resistance at the necks of ultrafine metal powders is proposed. The decrease in the resistance of powders isothermally annealed at room temperature without compacting is explained as the neck growth among powders due to surface diffusion. The activation energy for the surface diffusion of Au is found to be 0.88±0.02 eV from resistance measurements. Obstruction of the neck growth is clearly detected in an atmosphere of O2 in all the materials examined, whereas obstruction by N2, Ar and aqueous vapour is found to be negligible compared with that of O2.
Optical Absorption of KCl Single Crystals in the Spectral Region from 1.1 to 7.0 eV
Authors: Kasai Akinari
Published: November 2005

The reflectivity of KCl in the region from 1.1 to 6.2 eV has no structure and increases slightly with photon energy. Moreover, it depends little on the origin of the specimen. The optical density of KCl is small and increases linearly with photon energy in the region up to 5.5 eV. In this region, the optical density is almost independent of the thickness of the specimen and is therefore attributed to absorption at the surface. At 5.5 eV, however, the optical density rises steeply and depends on the thickness. However, the value extrapolated to zero thickness connects smoothly with the optical density below 5.5 eV. In KCl, the surface levels cover the band gap of the bulk. The levels which lie more than 4.0 eV below the vacuum level are occupied by electrons, and there seems to be a continuous and homogeneous distribution of the surface level.
Photoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect
Authors: Fujii Yasuhiro , Moritani Akihiro , Nakai Junkichi
Published: November 2005

The Rosencwaig-Gersho theory of photoacoustic spectroscopy has been expanded into the two-layer model and the photoacoustic signal in the multi-layer model has been deduced from its approximations in special cases.
Furthermore, the photoacoustic signal is discussed considering multi-reflection of the light in a sample. This calculation accounts for the interference effect on photoacoustic signals. As an example, the interference theory was applied to a sample of silicon on sapphire (SOS), which showed considerable effect of interference.
Dilatometric Measurement of the Thermal Expansion of Cobalt Single Crystal
Authors: Kasamatsu Yoshitaka , Koyama Michie , Masumoto Kan-ichi , Kojima Ken-ichi , Hihara Tadamiki , Kamigaichi Takahiko
Published: November 2005

The thermal expansion of an hexagonal cobalt single crystal has been measured in the temperature range between 77 and 900 K by using a comparative quartz dilatometer. The linear coefficients of the thermal expansions along the c and a axes are 17.8×10-6 and 12.5×10-6, respectively, at 300 K and increase with increasing temperature, their rates of increase being larger at low temperatures. The temperature variations of the volume expansion and the axial ratio c/a are also derived from those of the thermal expansions.
Lateral-Photovoltaic Measurement of the Corbino Magnetoresistance of a Very Thin Layer–N2
+-Implanted Layer on p-Si
Authors: Niu Hirohiko , Takai Munezo
Published: November 2005

This paper shows that the Corbino magnetoresistances of the p- and n-layers of a junction can be found from the lateral photovoltages (LPV's) measured under a magnetic field. There is no need to supply an external current to the sample in this method, since current-flows can be generated optically by irradiating part of the p-n junction, while the LPV's induced in the p- and n-layers can be measured at the same time. The electrical properties of the n-layer formed by N2
+-implantation on a p-Si substrate (and of the substrate also) have been studied by this method. The temperature dependence of the magnetoresistance over the range from -41 to 30°C has shown that the carrier scattering mechanism in the implanted layer cannot be explained in terms of lattice scattering only, while lattice scattering is dominant in the substrate.
Uniformity of Magnetic Properties in Amorphous Thin Films
Authors: Araki Yasunori , Ohbuchi Yutaka , Sakurai Yoshifumi
Published: November 2005

Rare earth transition metal amorphous magnetic thin films with a uniaxial magnetic anisotropy normal to the film plane may be used in memory devices in the future. The magnetic properties are required to be uniform for such an application. This paper describes experimental results on the uniformity of Gd-Fe thin films prepared by various deposition methods and proposes a new deposition method, electron beam deposition through a specially-shaped window onto a revolving substrate. Use of a revolving substrate produces uniformity of the magnetic properties in amorphous thin films, but has direct effects upon the internal structure of such films.
A Digital Full-Autocorrelator for Photoelectric Pulses
Authors: Sato Hideaki , Suzuki Norihito
Published: November 2005

A 256-channel autocorrelator has been designed for studying photon counting distributions. The system has a new method of (n-k) sampling with no dead time and is not of the clipping type. It is easy to increase the number of channels, as the system is composed of independent unit boards. The laser light scattered from polystyrene spheres of two sizes suspended in water under electrophoretic movement was measured by this apparatus and the spectral shifts obtained.
Measurement of the Resistance of Manganin Wire with Cubic-Anvil Type Pressure Apparatus. II
Authors: Nomura Motoyuki , Nishizaka Teiichirou , Nakagiri Nobuyuki , Fujiwara Hiroshi
Published: November 2005

The electrical resistance of manganin wire was measured together with the X-ray diffraction of the pressure marker under hydrostatic pressures up to 60 kbar with a cubic-anvil type pressure apparatus. A time-dependent change in the resistance was observed after all the valves of the hydraulic press had been closed, and it was confirmed that this resistance change was due to a change in the pressure itself within the sample chamber. The resistance increased with pressure in an approximately linear manner. The solidification pressure, P
s, was estimated for isopropanol from the resistance anomaly observed and it was found to be lower by several kilobars than so far reported. Hysteresis in the resistance-pressure curve was also observed above P
s, and this was attributed to the pressure distribution within the sample chamber.
Spectrophotometer for Both Transmissivity and Reflectivity Measurement in the Region from the Near Infrared to the Ultraviolet
Authors: Kasai Akinari , Ohishi Kazuo , Mimura Chiichiroh
Published: November 2005

When multiple internal reflections are taken into account, low-absorption (high-transmissivity) measurement must be corrected with the reflectivity. With this in mind, a spectrophotometer for both transmissivity and reflectivity measurement has been developed. It covers measurement from the near infrared to the ultraviolet (1.1 to 6.2 eV). Since the spectrophotometer aims at especially high transmissivity measurement, it requires low stray light, fine adjustment of the optical system and low-noise electronics. This paper discusses its principle, its performance and the method of correction for effective operation. The spectrophotometer can measure the transmissivity T from 0.0004 to 0.998 and the reflectivity R from 0.0005 to 0.998 in the spectral region from 1.1 to 5.1 eV, and T from 0.003 to 0.995 and R from 0.0008 to 0.995 in the region from 5.2 to 6.2 eV.