bluuebunny/crossref_metadata_2025 huggingface dataset:
Muscle pH, rigor mortis and blood variables in Atlantic salmon transported in two types of well‐boat
Authors: Gatica M. C. , Monti G. E. , Knowles T. G. , Gallo C. B.
Published: October 2010

Two systems for transporting live salmon (Salmo salar) were compared in terms of their effects on blood variables, muscle pH and rigor index: an ‘open system’ well‐boat with recirculated sea water at 13.5°C and a stocking density of 107 kg/m3 during an eight‐hour journey, and a ‘closed system’ well‐boat with water chilled from 16.7 to 2.1°C and a stocking density of 243.7 kg/m3 during a seven‐hour journey. Groups of 10 fish were sampled at each of four stages: in cages at the farm, in the well‐boat after loading, in the well‐boat after the journey and before unloading, and in the processing plant after they were pumped from the resting cages. At each sampling, the fish were stunned and bled by gill cutting. Blood samples were taken to measure lactate, osmolality, chloride, sodium, cortisol and glucose, and their muscle pH and rigor index were measured at death and three hours later. In the open system well‐boat, the initial muscle pH of the fish decreased at each successive stage, and at the final stage they had a significantly lower initial muscle pH and more rapid onset of rigor than the fish transported on the closed system well‐boat. At the final stage all the blood variables except glucose were significantly affected in the fish transported on both types of well‐boat.
Improvements in Optical Properties of Semipolar r-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers
Authors: Kobayashi Atsushi , Kawano Satoshi , Ueno Kohei , Ohta Jitsuo , Fujioka Hiroshi
Published: October 2010

We have investigated the structural and optical properties of semipolar r-plane GaN{1102} films grown on nearly-lattice-matched ZnO substrates with room-temperature (RT) epitaxial GaN buffer layers, putting special emphasis on the effect of surface treatment of the ZnO substrates. The full-width at half-maximum values of X-ray rocking curves for 1-µm-thick r-plane GaN layers grown at 700 °C on these RT-buffer layers, as measured using various X-ray incidence geometries, are in a range from 313 to 598 arcsec. Photoluminescence peaks attributable to structural defects in the r-plane GaN films have been shown to be reduced, and the near-band-edge emission has been enhanced by approximately 5 times by the use of atomically-flat r-plane ZnO substrates prepared by high-temperature annealing in air inside a box made of ZnO.
Investigation of Remote-Phosphor White Light-Emitting Diodes with Multi-Phosphor Layers
Authors: Zhu Yiting , Narendran Nadarajah
Published: October 2010

To understand how multiple phosphors in a mixture or stacked layers affect the performance of the remote-phosphor “scattered photon extraction (SPE)” white light-emitting diode (LED), a laboratory study was conducted with commercial yellow [quantum efficiency (QE)=0.91] and red (QE=0.59) phosphors in equal amounts. The highest light output was obtained when the longer-wavelength red phosphor was placed as the second layer. Experiments showed that when using two phosphors in an SPE package, several factors influence the performance: mixture or stacked layers; specific layer order; phosphor densities; phosphor external QE; overall spectral power distribution (SPD); phosphor excitation and emission spectra and efficiencies.
Low-Voltage-Driving Liquid Crystal Lens
Authors: Ye Mao , Wang Bin , Uchida Masaru , Yanase Satoshi , Takahashi Shingo , Yamaguchi Maki , Sato Susumu
Published: October 2010

An approximately 1 µm-thick thin insulation film is introduced into a liquid crystal lens cell, replacing the substrate between the patterned electrode and the liquid crystal layer. The distance between the electrodes decreases markedly, and the driving voltages decreases from several tens of volts to only approximately 3 V.
Impact of High-k HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors
Authors: Park Jae Chul , Kim Sun Il , Kim Chang Jung , Kim Sungchul , Kim Dae Hwan , Cho In-Tak , Kwon Hyuck-In
Published: October 2010

We have investigated the impact of high-k HfO2 gate dielectric on the low-frequency noise (LFN) behaviors of amorphous indium–gallium–zinc oxide thin-film transistors by comparing the LFNs of devices with SiO2 and HfO2 dielectrics. Measured LFNs are nearly 1/ f type for both devices, but the normalized noise for the HfO2 device is around one order of magnitude higher than that for the SiO2 device. The bulk mobility fluctuation is considered as the dominant LFN mechanism in both devices, and the increased LFN in the HfO2 device is attributed to the enhanced mobility fluctuation by the remote phonon scattering from the HfO2.
Probabilistic analysis of simulation-based games
Authors: Vorobeychik Yevgeniy
Published: October 2010

The field of game theory has proved to be of great importance in modeling interactions between self-interested parties in a variety of settings. Traditionally, game-theoretic analysis relied on highly stylized models to provide interesting insights about problems at hand. The shortcoming of such models is that they often do not capture vital detail. On the other hand, many real strategic settings, such as sponsored search auctions and supply-chains, can be modeled in high resolution using simulations. Recently, a number of approaches have been introduced to perform analysis of game-theoretic scenarios via simulation-based models. The first contribution of this work is the asymptotic analysis of Nash equilibria obtained from simulation-based models. The second contribution is to derive expressions for probabilistic bounds on the quality of Nash equilibrium solutions obtained using simulation data. In this vein, we derive very general distribution-free bounds, as well as bounds which rely on the standard normality assumptions, and extend the bounds to infinite games via Lipschitz continuity. Finally, we introduce a new maximum-a-posteriori estimator of Nash equilibria based on game-theoretic simulation data and show that it is consistent and almost surely unique.
Analog Operation and Harmonic Distortion Temperature Dependence of nMOS Junctionless Transistors
Authors: Doria Rodrigo T. , Pavanello Marcelo A. , Lee Chi-Woo , Ferain Isabelle , Dehdashti-Akhavan Nima , Yan Ran , Razavi Pedram , Yu Ran , Kranti Abhinav , Colinge Jean-Pierre
Published: October 2010

This paper compares the analog parameters of the multiple gate Junctionless transistors with the ones presented by classical inversion mode Trigate devices from 473 K down to 223 K. The transconductance to the drain current ratio (gm/IDS), the Early voltage (VEA) and the intrinsic voltage gain (AV) have been evaluated for both Junctionless and inverse mode devices with different fin widths. Also, the non-linearity of this novel architecture is studied in terms of the total and the third order harmonic distortions (THD and HD3, respectively) both at a fixed input voltage and at a targeted output swing. According to the study, the drain current of Junctionless transistors have exhibited lower temperature dependence with gm/IDS at moderate/strong inversions and their AV increase with the temperature, whereas the maximum AV of Trigate devices is obtained at room temperature. Junctionless also present better THD and HD3 with respect to the classical Trigate transistors.
Analog Parameters of Strained Non-Rectangular Triple Gate FinFETs
Authors: Bühler Rudolf T. , Giacomini Renato C. , Martino João A.
Published: October 2010

The strained silicon technology together to the reduction of the temperature is studied in this paper on trapezoidal triple gate FinFETs, through three-dimensional numerical simulation, with particular focus on analog parameters. The comparison of the intrinsic voltage gain between the different trapezoidal fin shapes demonstrated that, although the strained silicon technology provided higher intrinsic voltage gain, the fin shape can have a major role in analog parameters, helping to improve those parameters under certain circumstances. Higher intrinsic voltage gains were obtained for strained devices with top fin width larger than bottom.
DIBL Behavior of Triple Gate FinFETs with SEG on Biaxial Strained Devices
Authors: Dos Santos Sara D. , Nicoletti Talitha , Martino João A. , Simoen Eddy , Claeys Cor
Published: October 2010

In this work the influence of Selective Epitaxial Growth (SEG) is studied using standard and biaxially strained devices, analyzing the Drain Induced Barrier Lowering effect (DIBL). The use of SEG promotes an increase of DIBL in devices with variable fin width and channel lengths. Contrary to the NO SEG behavior previously studied, standard devices present better DIBL values. In order to explain that change, the resistance distribution in the device was studied since the use of SEG promotes a decrease on the parasitic series resistance.
Analog Performance of SOI nFinFETs with Different TiN Gate Electrode Thickness
Authors: Galeti Milene , Rodrigues Michele , Collaert Nadine , Simoen Eddy , Claeys Cor , Martino João A.
Published: October 2010

This work presents an analysis of the analog performance of SOI FinFET devices and the impact of different TiN metal gate electrode thickness. Thinner TiN metal gate allows achieving large gain in spite of the reduced variation observed on gm/IDS characteristics. This effect can be attributed to the increased Early voltage values observed for thinner TiN metal gate. This VEA enhance suggests an increase of the transversal electrical field for thin TiN metal gate (reduced effective oxide thickness - EOT) that is confirmed with the increment of the GIDL current. This impact on the voltage gain is maintained for short channel length.
Simulation of OTA's with Double-Gate Graded-Channel MOSFETS using the Symmetric Doped Double-Gate Model
Authors: Contreras Esteban , Cerdeira Antonio , Pavanello Marcelo A.
Published: October 2010

In this paper, Operational Transconductance Amplifiers (OTA's) were simulated in SPICE using the Symmetric Doped Double-Gate Model which includes the capacitances of Double-Gate (DG) transistors. In this work, all the transistors have been simulated using just one model for lightly doped transistors (TLD), high doped transistors (THd) N-channel devices and P-channel devices. These OTA's show an improvement in the high open-loop voltage gain which is related mainly to the reduction of the drain output conductance which gives higher Early voltages for DG GC transistors.
The Role of the Source and Drain Contacts on Self-Heating Effect in Nanowire Transistors
Authors: Vasileska Dragica , Hossain Arif , Goodnick Stephen M.
Published: October 2010

We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for VG=VD=1.0 V in a structure in which the metal gates are far away from the channel. The overall small current degradation is attributed to the significant velocity overshoot effect in these structures. The lattice temperature profile show moderate temperature rise and velocity of the carriers is slightly deteriorated due to self-heating effects when compared to isothermal simulations.
Thickness Dependence of Indium-Tin Oxide Thin Films Deposited by RF Magnetron Sputtering
Authors: Damiani Larissa R. , Mansano Ronaldo D.
Published: October 2010

Indium-tin oxide is a ceramic material that exhibits electrical conductivity and optical transparency. It is used as transparent electrode in many optoelectronic devices. Among the possible deposition methods, magnetron sputtering is one of the most attractive techniques due to its good reproducibility and possibility of uniform deposition over large areas. In this work, indium-tin oxide thin films with different deposition times were obtained by radio frequency magnetron sputtering without intentional substrate heating. Their optical, electrical, physical and chemical properties were investigated.
Electrical Characterization of Cu2O n-type Doped with Chlorine
Authors: Pelegrini Silvia , De Araujo Clodoaldo I. , Da Silva RenÊ C. , Viegas Alexandre D. , Pasa André A.
Published: October 2010

We have electrodeposited thin films of cuprous oxide (Cu2O) on Au/Si substrates from electrolytes containing Cl. The layers were characterized by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), X-Ray diffractometry (XRD) and I-V and C-V measurements. The top surface of the layers were contacted with different metals. n-type doping was observed and resistivities of 6 x 102 Ohm.cm were measured. The Cu2O grew with preferential orientation following the (111) texture of the Au layer. The presence of textured films was also evidenced by the presence of pyramids on the SEM images. n-Cu2O formed Schottky barrier with Fe and ohmic contact with Au, Al , Cu and Pl.
Characterization of InN Thin Films Grown by IBAD Method
Authors: Sparvoli Marina , Chubaci José Fernando D. , Mansano Ronaldo D.
Published: October 2010

The optical and electrical properties of nanostructured indium nitride (InN) thin films are studied in this work. Indium nitride films has been the subject of intensive research in the past few years due to its potential applications in optoelectronic area, such as solar cells and photo sensors. The primary objective of this work is to study the effects of deposition temperature on the crystallinity and morphology of these films. InN thin films were grown at room temperature (RT) and at 300 {degree sign}C using the Ion Beam Assisted Deposition (IBAD) method. The XRD patterns revealed that the room temperature deposited films were amorphous. Films formed at 300 {degree sign}C showed two peaks around 31{degree sign} (wurtzite-type InN 002) and around 33{degree sign} (metallic In 101). The thickness, roughness and deposition rate of the InN films were measured by high step meter and ellypsometer. In current versus voltage (IxV) analyses, all samples show semiconductor characteristics.
Nano-Crystalline Palladium-Film Catalysts Deposited By E-beam Evaporation Aiming Hydrogen Sensing
Authors: Stem Nair , Dos Santos Filho Sebastião G.
Published: October 2010

Palladium thin films were deposited on previously oxidized silicon wafers using E-beam evaporation aiming hydrogen sensing. The hydrogen incorporation after different kinds of annealings was studied. The changes in the film characteristics during hydrogen incorporation at different temperatures were evaluated using Atomic Force Microscopy (AFM), X-Ray Difraction (XRD) techniques, Energy Dispersion System together a MEV microscope (EDS) and Rutherford Backscattering Spectrometry (RBS). The hydrogen incorporation into the palladium lattice under atmospheric pressure showed to be predominantly in α phase for temperature ranging from 70oC to 110oC (for two different hydrogen concentrations: air and FG expositions). The electrical sheet resistance characterizations were sensitive to hydrogen incorporation, presenting quantitative values. Also, palladium films presented a nano-crystalline structure suitable for hydrogen sensing at temperatures lower than 100oC.
The Nickel Micro-tubes Fabrication by Galvanic Displacement Method Using Macroporous Silicon as Template
Authors: Huanca Danilo R. , Salcedo Walter J.
Published: October 2010

The Nickel microtubes were fabricated using the macroporous silicon as template substrate. The metal microtubes were obtained after immersion of macroporus silicon layer into the ammonium fluoride media containing nickel ions. The results show that the efficiency of tubes formation is sensible to pH level of electrolyte solution. The best pH level was 6.5 since for other pH levels non-tubes formation was observed. These results were discussed in the sense of the galvanic displacement effect.
Influence of the Bonding Force, Anisotropic Conductive Film (ACF) and Reflow Process on the Flip Chip Assembly
Authors: Madalossi Natiara V. , Otta Marcio , Mazon Talita
Published: October 2010

Flip chip assembly on FR4 board using anisotropic conductive films (ACFs) is gained more attention because of its many advantages. But to obtain more reliable flip chip assembly, it is necessary to control the parameters involved in the process. In this work, the effect of bonding force of ACF, as well as the kind of ACF and the parameters evolved in the reflow process on the ACF flip chip joints were investigate. It was observed a formation of the high conduction gap for ACF joints bonded with lower bonding forces after reflow. This high conduction gap can result in electrical disconnection in the worst case.
Analysis of Lateral SOI PIN Diodes for the Detection of Blue and UV Wavelengths in a Wide Temperature Range
Authors: De Souza Michelly , Bulteel Olivier , Flandre Denis , Pavanello Marcelo A.
Published: October 2010

This work presents an analysis on the performance of lateral thin-film SOI PIN diodes for the detection of short wavelengths, in the range of blue and ultra-violet (UV) wavelengths, as a function of the temperature, reaching the cryogenic regime. Measurements performed for temperatures ranging from 100 K to 400 K showed that the optical responsitivity of these photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations were performed showing the same trends as the experimental data, and were used to predict the influence of silicon film thickness downscaling on the photodetector performance.
Ultra Fast Response to Light Radiation in SnO2 Microrods
Authors: Perillo Patricia M. , Rodriguez Daniel F. , Rinaldi Carlos A. , Lamagna Alberto
Published: October 2010

SnO2 microrods exhibited an ultra-fast photo-response when light led 402-940 nm was switched on and off. SnO2 microrods films were prepared with SnCl4 as the starting material. We found that increasing light radiation flux decreases the resistance. The effect of radiation on the film will be discussed as function of chemiabsorbed oxygen.
Study of Organic MIM Junctions for Use in Photovoltaic Devices
Authors: Silva Elizete R. , Romariz Alexandre R. , Ceschin Artemis M.
Published: October 2010

We report here photovoltaic effects on Buriti oil (Mauritia flexuosa) mixed in an insulating polymers matrix. The samples studied here consist of an active layer based on polystyrene (PS) and poly (methilmethacrilate) (PMMA) mixed with Buriti Oil (BO). The structure of the device was glass/FTO/ Poly (3, 4- ethylenedioxythiophene) (PEDOT): poly (styrenesulfonate) (PSS)/ active layer/ Ag. These mixtures are promising materials in the fabrication of organic photovoltaic devices. The advantage of these mixtures is their low cost of production and ease in fabrication. Electrical measurements were obtained in both a lit room and in the dark. We can observe photovoltaic effects in all samples mixed with OB. This effect is very interesting because we are working with an insulating polymer instead of the semiconductor polymer. In this work we have been developing a junction of the metal- insulator-metal (MIM) diode that acts like a photovoltaic device. Introduction
Fabrication and Characterization of TeO2-ZnO Rib Waveguides
Authors: Del Cacho Vanessa D. , Siarkowski Acacio L. , Morimoto Nilton I. , Borges Ben-Hur V. , Kassab Luciana R.
Published: October 2010

This work presents, for the first time to our knowledge, experimental results on tellurite rib-type waveguides produced with TeO2-ZnO thin films deposited by RF Sputtering. Thin films were deposited at room temperature using Ar/O2 plasma at 5 mTorr pressure and RF power of 50 W on substrates of (100) silicon wafers. Geometry and sidewall of the waveguides were investigated by Scanning Electron Microscopy (SEM). Propagation losses of 0.1 dB/cm for 10 um rib width and 1.5 dB/cm for 3-5um ribs widths and 90 nm height were obtained.
Study of Formation of Oriented Fibers Using Injection of Polymeric Solutions Inside Electric Fields Defined by Two Parallel Suspended Electrodes
Authors: Furlan Rogerio , Rosado Joel A. , Da Silva Ana N.
Published: October 2010

The formation of oriented fibers using injection of polymeric solutions inside electric fields defined by two parallel suspended electrodes is investigated. Image analyses of polymeric streams (using the injection of a large amount of polymer) are compared with electric field distributions obtained with numerical simulation (COMSOL Multiphysics). A sequence of formation of polymer streams that follow electric field stream lines is observed. Initially a stream moves towards the positive electrode. Then, streams are ejected from the positive electrode towards the grounded electrode. Oriented fibers with diameters in the range of nano- to micrometers result connected between electrodes (separated by several centimeters) and can be easily collected/transferred keeping their orientation. This type of fibers finds applications in topics such as tissue and sensors engineering. Also, the fibers are flexible and can be shaped with the stylus of a profilometer without rupture.
Optimization of Nanostructured Devices Using Self-consistent Calculations
Authors: Tanaka Roberto Y. , Passaro Angelo , Abe Nancy M. , Muraro Ademar , Vieira Gustavo S.
Published: October 2010

In this work, self-consistent calculations of semiconductors band structure and genetic algorithm method are used to design semiconductor nanostructures. In special, we calculate the band structure of semiconductors nanostructures including contact layers, which are frequently neglected.
Multiwall Carbon Nanotubes Thin Film Deposition with the Help of Symmetric Focused Surface Acoustic Wave Atomizers
Authors: Balachova Olga , Balashov Sergey , Pavani Aristides , De Almeida Maria das Graças
Published: October 2010

Thin MWCNTs films were obtained by deposition of the atomized single droplet of a suspension of MWCNTs in N-Methylpyr- rolidone (NMP) on the silicon substrate. Symmetric focused surface acoustic wave (SAW) atomizers with focal line and focal point were used to atomize the droplet. Atomizers were fabricated on 128o YX-cut of LiNbO3. Atomization frequency was 27.4 MHz. Their effectiveness was experimentally estimated and it was found that the atomizers with focal point have the maximum atomization effectiveness. It was experimentally shown that the film thickness is proportional to the number of single droplet atomizations. Using the developed method, we deposited thin uniform MWCNTs films through the small window on the substrate surface, covering an area of just a few square millimeters. This technique can be used in digital chemistry applications, where microliter volumes of reacting substances are used, and for fabrication of nanomaterial-based sensitive films for SAW sensors.
Effects of High-Energy Ion Irradiation on the Conduction Characteristics of HfO2-based MOSFET Devices
Authors: Palumbo Felix , Miranda Enrique , Cherkaoui Karim , Hurley Paul , Negara M. A.
Published: October 2010

MOSFET devices with HfO2 gate oxides were irradiated with high-energy (120 MeV) Au ions. It was observed that the irradiation ca n cause both little or severe damage to the structures under test. We associate these effects with the soft and hard breakdown failure modes occurring in ultra-thin oxides. In both cases there is a large increment of the transistor off current. If the damage is not catastrophic a decrease of the transconductance and drain current characteristics can also be detected. This indicates that the transistor is still operational but with worst performance parameters.
Conductance Modeling of High-k Al2O3 Gate Dielectrics Prepared by Oxidation of Aluminum Thin Films
Authors: Christiano Verônica , Gozzi Giuliano , Sonnenberg Victor , Dos Santos Filho Sebastião G.
Published: October 2010

This work describes a conductance modeling of aluminum oxide (Al2O3) gates prepared by oxidation of aluminum thin films in nitric acid at room temperature followed by annealing at 650oC. The electrical characterization was performed by measurements of Current-Voltage (I-V) and Capacitance X Voltage (C-V) characteristics. The Al2O3 films with equivalent thicknesses (EOT) ranging from 2.3 to 4.3nm presented different mechanisms of leakage through the aluminum oxide gates. Also, it was shown that Al2O3 thin films annealed in ultrapure Argon presented better electrical characteristics (leakage current ≈ 11.5 mA/cm2).
Study of TiOxNy MOS Capacitors
Authors: Albertin Katia F. , Souza Denise C. , Zuñiga Alejandro , Pereyra Inés
Published: October 2010

A set of MOS capacitors with TiOxNy films deposited by reactive r.f. magnetron sputtering varying the nitrogen partial pressure in an Ar/N2 gaseous mixture, as gate dielectric layer, was fabricated and characterized. These films were annealed at 550 and 1000oC in N2 environment. The TiOxNy films were characterized by Raman, Rutherford Backscattering (RBS), and High Resolution Transmission Electron Microscopy (HRTEM). Capacitance-voltage (1MHz) and current-voltage measurements were used to obtain the effective dielectric constant, the effective oxide thickness (EOT), the leakage current density, and the interface quality. MOS capacitors results show that the TiOxNy films present a dielectric constant varying from 15 to 35, good interface quality with silicon and leakage current density varying from approximately 1 to 10 mA/cm2 for VG = -1V and for EOT of approximately 2 nm. The leakage current density is reduced in 2 orders of magnitude with an increase in nitrogen concentration.
Analysis of the Low-Frequency Noise in Graded-Channel and Standard SOI nMOSFET
Authors: Da Silva Eduardo L. , Miguez Matias , De Souza Michelly , Arnaud Alfredo , Pavanello Marcelo A.
Published: October 2010

In this paper a comparison between the low-frequency noise in graded-channel SOI nMOSFETs (GC SOI MOSFET) and standard fully depleted (FD) SOI nMOSFETs will be presented. The evolution of noise with bias and frequency, mainly in the GC SOI MOSFETs, will be demonstrated. Numerical bidimensional simulations are used to reproduce the same tendencies observed experimentally in order to allow for a physical insight on the noise in GC SOI transistors.
Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting
Authors: Lugo-Muñoz Denise , De Souza Michelly , Pavanello Marcelo A. , Flandre Denis , Muci Juan , Ortiz-Conde Adelmo , Garcia-Sanchez Francisco J.
Published: October 2010

A global lateral fitting procedure is proposed to extract the parameters of quadratic double exponential junction models in the presence of parasitic series resistance. Error analysis of the extracted parameters values within a large representative family of synthetic data indicate excellent match between the extracted values and a wide range of the original given model parameters. The procedure was also tested on real data to extract the model parameters of an experimental Silicon PIN diode measured at cryogenic temperature.
Modeling of the Inductive Coupled Plasma Discharges
Authors: Vieira Robson , Balashov Sergey , Moshkalev Stanislav
Published: October 2010

Inductively Coupled Plasma Discharges (ICP) currently are considered as the main tool for plasma processing in the microelectronics industry. A comprehensive understanding of ICP's functionality and behavior is fundamental for the evolution of this technology. This understanding requires its modeling as an electrical lumped circuit. Existing electrical models cannot explain all the characteristics of an ICP discharge, especially the E-to-H mode transition. In this work, preliminary results on the modeling of ICP plasma and the possibility to incorporate the plasma kinetics, particularly the effect of metastables on the transitions, is discussed.
Electrical and Humidity Characterization of Humic Substances (HS) from Peat for a Possible use in Humidity Sensing
Authors: Sandri Gustavo L. , Ribeiro Nilton C. , Romariz Alexandre R. , Ceschin Artemis M.
Published: October 2010

Thick films of humic substances (HS) from peat are evaluated for their electrical and humidity properties for use in humidity sensing. The thickness (10-50 mm) of the films is controlled by the amount of deposited solution on the polyester substrate. The samples exhibit typically two regions in their sensitivity curve when tested in the relative humidity (RH) range of 50-95%. The sensitivity (kW/%RH) ranges from 2.81W/%RH to 19.18 W/%RH for higher to lower thickness.
Voltage-dependent Mobility Characterization of MDMO-PPV Thin-Film Transistors for Flexible Sensor Applications
Authors: Cavallari M. R. , Albertin Katia F. , Santos G. , Ramos C. A. , Pereyra Inés , Fonseca F. J. , Andrade A. M.
Published: October 2010

We complement our previous published results on MDMO-PPV thin-film transistors by treating data according to different models that consider charge transport by hopping. Devices were processed on highly-doped silicon and ITO-covered glass substrates with dielectrics such as thermal SiO2 and PECVD deposited SiOxNy. Charge carrier mobility and threshold voltage on polymeric thinfilm transistors can be better estimated considering transport dependence on carrier density, Poole-Frenkel effect and interface states. Best results were achieved on HMDS-treated SiO2, but a completely new voltage-dependence is attained. These models can be employed for a better understanding of the polymeric semiconductor behavior when in a TFT-based sensor.
Carbon-Modified Titanium Dioxide Deposited by E-Beam Aiming Hydrogen Sensing
Authors: Stem Nair , Dos Santos Filho Sebastião G.
Published: October 2010

Titanium dioxide films deposited by e-beam evaporation were analyzed by ellipsometry, Atomic force microscopy (AFM), Rutherford Backscattering Spectrometry (RBS) and, Energy-Dispersive X-ray Spectroscopy (EDS) and Wavelength-Dispersive X-Ray Spectroscopy (WDX) conducted in a Scanning Electron Microspy (SEM). It was noteworthy that titanium dioxide films appeared to be of uniform thickness, stoichiometric phase (since a suitable deposition pressure is used) and with low root mean square roughness (RMS=1.95nm). The behavior of the films under annealing in Forming Gas (90% N2 and 10% H2) was also evaluated qualitatively, demonstrating that the film resistivity increases as the annealing temperature increases due to the hydrogen adsorption mechanism and the presence of carbon trace (up to 1.5% weight).
Microfluidic Systems in PDMS for Study of Foraging Abilities of Marine Microorganisms
Authors: Mielli Murilo Z. , Baldasso Luis F. , Lopes Rubens M. , Carreño Marcelo N.
Published: October 2010

A microfluidic system, fully operational for further studies of foraging abilities of marine microorganisms, is presented. The microchannels are fabricated in PDMS (polydimethylsiloxane) by a simple, fast and low-cost soft lithography method, utilizing a SU-8 photoresist master. The devices exhibit a quite satisfactory performance, since we obtain the expected laminar flow regime. No leakage was observed in the channel itself and the appropriate flow control was attained. This allows to reproduce, in controlled and realistic conditions, resource patches existing in the ocean at submillimetric scales.
(Invited) Downscaling Issues in Polycrystalline Silicon TFTs
Authors: Fortunato Guglielmo , Cuscunà Massimo , Gaucci Paolo , Maiolo Luca , Mariucci Luigi , Pecora Alessandro , Valletta Antonio
Published: October 2010

Future system-on-panel applications require further performance improvement of circuits based on polycrystalline silicon thin film transistors (TFTs). The biggest leverage in circuit performance can be obtained by reducing channel length from the typical current values of 3-6 micron to 1 micron, or less. Therefore, short channel effects in scaled down polysilicon TFTs will have to be controlled in order to allow proper operation of the circuits. In this work we review a number of specific aspects of the electrical characteristics of short channel devices (channel lengths down to 0.4 micron) combining electrical characteristics measurements and two-dimensional numerical simulations.
(Invited) Stabilities of TFTs under Bias-Stress
Authors: Jang Jin , Mativenga Mallory , Choi Jae Won
Published: October 2010

The bias-induced instability in hydrogenated amorphous silicon (a-Si:H), amorphous indium-gallium-zinc-oxide (a-IGZO) and low temperature poly-Si (LTPS) thin-film transistors (TFTs) is investigated. Gate bias-induced charge trapping at the active-layer/gate-insulator interface and into the gate-insulator, is the origin of positive threshold voltage (Vth) shift in a-Si:H and a-IGZO TFTs. The time dependence of the Vth shift (Vth) in a-Si:H and a-IGZO TFTs is explained by the charge trapping model rather than bond breaking model. The swing degradation-related Vth in LTPS TFTs, originates from the generation of grain boundary trap states, interface trap states and fixed oxide charge, when a negative gate-bias is applied. A good fit of the measured results is obtained by the bond-breaking model. Analysis of the charge trapping and bond breaking mechanisms is used to understand the electrical stability of the three kinds of TFTs.
Reduction of Hot Carrier Effects in Corning Silicon-on-Glass TFTs
Authors: Mativenga Mallory , Choi Min Hyuk , Choi Won Jae , Choi Jae Won , Jang Jin , Mruthyunjaya Ravi , J. Tredwell Timothy , Mozdy Eric , Kosik Williams Carlo
Published: October 2010

Hot carrier (HC) instability of thin film transistors (TFTs) fabricated on single crystalline Corning® Silicon-on-Glass (SiOG) substrates is studied (1). The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performance with electron and hole field effect mobilities (μfe) of ~251 and 201 cm2/V⋅s, threshold voltages of ~-0.3 and -1.2 V, and gate swing (S) values of ~180 mV/dec. While p-channel TFTs exhibit good stability, on-current (ION) degradation is unfortunately observed in the transfer characteristics of the n-channel TFT due to HC stress. In this study, the integration of a lightly doped drain (LDD) structure to minimize HC instability in the n-channel SiOG TFTs is reported. The LDD design has 2 μm regions produced by ion implanting phosphorus at 10 keV to a light doping (n-) level. N- levels of ~1 × 1013, 2 × 1013, and 3 × 1013 cm−2 are analyzed to determine the optimum doping conditions that leads to HC improvement with minimal detrimental impact to the on-state device performance.
Protection Layer Effects on the Device Performance of Oxide/Organic Hybrid TFTs
Authors: Yang Shinhyuk , Ko Park Sang-Hee , Ryu MinKi , Cho Doo-Hee , Hwang Chi-Sun , Yoon Sung-Min , Byun Chunwon , Cho Kyoung Ik , Kwon Ohsang , Kim Se-Hyun , Park Chan-Eon , Jang Jin
Published: October 2010

We fabricated oxide and oxide/organic hybrid TFTs on the glass substrate using the In-Ga-Zn-O (IGZO) as an active layer, and Al2O3 and PVP-PMMA co polymer as gate insulators, respectively. The Protection Layer (PL) for the oxide active was adopted to improve and understand the hysteresis characteristics of these oxide based TFTs. By adopting the PL layer, we can obtain the improved saturation mobility (usat) and sub-threshold swing (SS) compared to the without PL device from 17.63 cm2/Vs and 0.19 V/decade to 20.43 cm2/Vs 0.13 V/decade, respectively. The hysteresis characteristics with clock-wise direction were also dramatically improved in the PL process device from 1.22 V to the 0.02 V. We believe that this phenomenon is related to the contamination or damage of back channel surface of oxide semiconductor by photo-resist, solvent, and etchant that can generate the trap sites in the oxide active layer.
(Invited) Nano-Inkjet and Its Application to Metal-Induced Crystallization of a-Si for Poly-Si TFTs
Authors: Asano Tanemasa , Ishida Yuji
Published: October 2010

This paper reviews electro-static inkjet and its application to location controlled growth of poly-crystalline Si grains for thin-film transistor application. The electro-static inkjet using a needle head enables us to draw dot patterns whose dimension is in the deep submicron region. Ejection of a Ni-nanoparticle solution using the head to the surface of a-Si produces single-grains at the printed sites as was demonstrated by Ni nano-imprint technology.
Reducing Ni Residues of Metal Induced Crystallization Poly-Si with a Simple Chemical Oxide Layer
Authors: Lai Ming-Hui , Wu YewChung S.
Published: October 2010

The high leakage current is the most important issue of MIC-TFT. Ni residues in the MIC-TFT is the major cause of the leakage. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process. The process is simple and without extra thermal annealing. It was found that the Ni concentration of poly-Si film with chemical oxide layer was much less than that of conventional MIC poly-Si film. As a result, the leakage current was improved.
(Invited) Polycrystalline Silicon Thin Film Transistors
Authors: Sameshima Toshiyuki
Published: October 2010

Technologies of polycrystalline silicon thin film transistors (poly-Si TFTs) are reviewed. Many important technologies have been developed in recent twenty years for establishing low processing temperature fabrication of poly-Si TFTs in order to use glass or plastic substrates. There have been rapid thermal annealing methods for formation of poly-Si films, defect passivation of poly-Si grain boundaries, and SiO2 formation. Structural and electrical properties of poly-Si films are also discussed. Characterization and evaluation methods are also reviewed. They are important for developing poly-Si TFTs processing. We discuss capability of TFT performance and possibility of application to electronic devices in future.
(Invited) Nanocrystalline Silicon Thin Film Transistors
Authors: Rad M. R. , Chaji G. R. , Lee C.-H. , Striakhilev D. , Sazonov A. , Nathan A.
Published: October 2010

We review performance characteristics of top- and bottom-gate nanocrystalline silicon (nc-Si) thin film transistors (TFTs). Top gate TFTs with nc-Si active layer of nearly 80% crystallinity along with a silicon oxide gate dielectric produce high electron mobilities; values two orders higher than the amorphous silicon counterpart. In contrast, bottom-gate TFTs with silicon nitride gate dielectric and nc-Si active layer of similar crystallinity yield a mobility that is only marginally better than amorphous silicon TFT. However, they are highly stable with no visible presence of defect state creation in the active layer. In contrast, top-gate TFTs suffer from severe charge trapping in the low quality oxide gate dielectric.
Schottky Diode Based on Microcrystalline Silicon Deposited at 165°C for RFID Application
Authors: Souleiman Isman , Kandoussi Khalid , Belarbi Khaled , Simon Claude , Coulon Nathalie , Crand Samuel , Mohammed-Brahim Tayeb
Published: October 2010

The design and fabrication of high efficiency low cost electronics components for commercial and industrial applications is very challenging. In this paper we introduce a fabrication of Schottky diode dedicated to high frequency rectification. The devices are prepared on Corning glass substrate with a configuration Au /µc-Si:H /Al and by using microcrystalline silicon as semiconductor. Photolithographic masks are used for diodes fabrication. Two processes are carried out to optimize Schottky diode characteristics. Silicon films are deposited in an usual RF PECVD reactor at low temperature (165°C). Current - voltage (I-V) characteristics are measured and plotted to determine the different parameters of Schottky contact such as ideality factor and rectifying ratio. At 13.56 MHz which is common in RFID frequency application, this Schottky diode in association with parallel load capacitor can be used to build an efficient rectifier.
(Invited) Inkjet-Patterned, Organic Complementary Circuits Integrated with Polymer Mechanical Sensors
Authors: Ng Tse Nga , Daniel Jurgen , Garner Sean , Krusor Brent , Russo Beverly , Arias Ana Claudia
Published: October 2010

Complementary inverters were fabricated by inkjet patterning of organic thin-film transistors, with typical carrier mobility of ~0.01-0.05 cm2/Vs for both types of semiconductors in top-gate configuration. The inverters showed a typical gain of -8 with VDD at 10 V, and polymeric accelerometers were integrated with the inverters to demonstrate sensor signal amplification.
(Invited) Electrical and Environmental Stability of Organic Transistors
Authors: Bedolla Javiear , Northrup John , Belaineh Dagmawi , Wagner Veit , Knipp Dietmar
Published: October 2010

An atomistic model which provides a consistent picture of the formation of gap states in the prototype material pentacene is presented and the influence of these states on the operation of thin-film transistors. Gap states are formed by an electrochemical process. The required formation energy depends on the electrochemical potential which can be controlled by the applied bias voltage.
Flow Rate's Influence on Low Temperature Silicon Oxide Deposited by Atmospheric Pressure Plasma Jet for Organic Thin Film Tranisitor Application
Authors: Chang Kow-Ming , Huang Shih-Syuan , Cheng Chun-Hu
Published: October 2010

Low temperature processes and high quality gate insulator are very important for organic thin film transistors (OTFTs). We utilized atmospheric pressure plasma jet (APPJ) to deposit silicon oxide as gate insulator of OTFTs at low temperature. We found carry gas's flow rate would influence the deposition mechanism which lead to influence surface roughness and film quality. Leakage current density of our proposed silicon oxide was about 2.53 E-8 A/cm2 at 0.5 MV/cm. Our proposed OTFTs shows a low subthreshold swing of only 700 mV/dec., a low threshold voltage of -0.8 V, a low operation voltage of -2 V. The low-voltage OTFTs would reduce the power consummation of flexible display.
Solution-Processed Oxide Thin-Film Transistor with Spin-Coated Zinc Tin Oxide Active Layer and Indium Zinc Oxide Source/Drain Electrodes
Authors: Kim Yong-Jin , Lee Jeong-Soo , Lee Yong-Uk , Cho Seung-Hwan , Kim Yong-Hoon , Han Min-Koo
Published: October 2010

We have fabricated oxide-based thin film transistors (TFTs) by employing a solution-based technology and investigated electric characteristics. We have deposited oxide TFTs not only the active layer but also source/drain electrodes by employing spin-coating process using solution with chloride-, acetate- and nitrate- based precursors. Zinc tin oxide (ZTO) film as an active layer and indium zinc oxide (IZO) film as source/drain electrodes have been used. After spin-coating, ZTO active layer and IZO source/drain electrodes were annealed for 10 minutes at 500{degree sign}C in RTA sequentially. The thickness of ZTO active layer is about 450Aå and IZO S/D electrodes is about 700Aå. The fabricated oxide TFTs (W/L=100/20 µm) exhibits a saturation mobility exceeding 0.07cm2/Vs, an on/off current ratio more than 106, and a subthreshold slope less than 0.2V/decade.
Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect
Authors: Kim Bong-Jin , Kim Hyung-Jun , Jung Sung Mok , Yoon Tae-Sik , Kim Yong-Sang , Lee Hyun Ho
Published: October 2010

Thin film transistors (TFTs) with nitrogen incorporated indium zinc tin oxide (IZTO:N) channel layer were fabricated and characterized. For the IZTO:N channel, TFTs was fabricated on heavily doped Si as a common gate electrode and silicon nitride (SiNx) was used as a gate dielectric layer. The IZTO:N layer was formed by spin-coating as precursor type solution and annealed at 600C. The precursors for indium, zinc, and tin were indium chloride, zinc chloride, and tin chloride. The incorporation of nitrogen was accomplished by addition of NH4OH solution. The IZTO:N TFT prepared with the precursor solution having 0.7% NH4OH has show the performance in mobility 1.2cm2/Vs, Ion/off of 10^6 and threshold voltage of 8.5V.
The Effect of Light Illumination on Transfer Curve and Stability of Amorphous Hf-In-ZnO Thin Film Transistors
Authors: Kim Jeong Hwan , Kim Un Ki , Chung Yoon Jang , Rha Sang-Ho , Jung Hyung-Suk , Lee Sang Young , Jung Ji Sim , Lee Sangyun , Hwang Cheol Seong
Published: October 2010

Amorphous HfInZnO (HIZO) - thin film transistor (TFT) with the bottom gate structure were fabricated to investigate the effect of light illumination on the transfer curves and stability characteristics under negative bias stress. The TFTs with passivation layers showed promising characteristics when measured in the dark, with a saturation mobility (µsat) of 9.0 cm2/Vs, a sub-threshold swing (SS) of 0.34 V/dec and an on/off ratio of ~108. However, when exposed to light of wavelengths below 500nm, the transfer curve changes remarkably, with an increase of SS and off-current (Ioff). The change in the transfer curves were also studied by examining them before and after negative bias-temperature-illumination stress. The increase of SS under light illumination can be due to the increase in the number of activated interfacial traps by photon energy.
The Effect of Illumination on the Negative Bias Temperature Instability in Zinc Tin Oxide Thin Film Transistors
Authors: Kim Un Ki , Kim Jeong Hwan , Oh Him Chan , Chung Yoon Jang , Hwang Cheol Seong
Published: October 2010

A number of reports have demonstrated the feasibility of oxide thin film transistors (TFTs) replacing silicon-based technology in active-matrix liquid-crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs). Among oxide materials, zinc tin oxide (ZTO) is being tipped off as an appropriate alternative for amorphous-silicon. ZTO tops its adversaries because it has a robust amorphous phase compared to ZnO and has a more simple composition compared to InGaZnO. Although ZTO TFTs showed their good performance, the stability issues of these devices have not yet been addressed. Because TFTs are used in display technology, the effect of light on their electrical performance is a vital matter that should be considered. Therefore, in this work, the effect of light illumination on the negative bias temperature instability (NBTI) of ZTO TFTs is investigated.
Improved Thermal Stability of Indium Zinc Oxide TFTs by Low Temperature Post Annealing
Authors: Indluru Anil , Alford Terry L.
Published: October 2010

We report the effect of low temperature long anneals on the performance and elevated temperature stability of low temperature fabricated indium zinc oxide (IZO) thin film transistors (TFTs). We have found that there is an optimum annealing time of 48 hours for the best performance and elevated temperature stability. The 48 hour annealed TFTs showed a stable turn-on voltage, and sub-threshold swing with operation temperatures when compared to the as-fabricated TFTs. The performance/stability improvements are attributed to the reduction in trap-state-density at the semiconductor/insulator interface, and curing of the defects states in the band-gap of IZO.
High Retention-Time Nonvolatile Amorphous Silicon TFT Memory for Static Active Matrix OLED Display without Pixel Refresh
Authors: Huang Yifei , Hekmatshoar Bahman , Wagner Sigurd , Sturm James
Published: October 2010

Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh and providing displays with the ability to store images without power.