bluuebunny/crossref_metadata_2025 huggingface dataset:
The modulation of bulk-organic solar cells: the effect of serial and parallel resistances and the relationship with the microscopic morphology
Authors: Trindade A.J. , Santos M.G. , Gomes J. , Pereira L.
Published: September 2011

This work shows the relationship between the morphology (studied by AFM) of an active bulk-heterojunction (BHJ) layer composed by MEH-PPV (poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) and PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) and the respective photovoltaic figures of merit. It is observed that the most relevant parameter (influencing the efficiency) is the fill-factor (FF), as both the open circuit voltage and short circuit current are not significantly affected by the microscopic morphology. Different local conformation of the active films can change the FF from near 25% to more than 65%, having a strong impact in the efficiency. These results were modulated by an equivalent circuit. Serial and parallel resistances were related with the physical behavior of the organic cells. These were observed to have a direct relationship with the achieved morphology.
Effect of Vanadium Ions on the Functional Properties of Nanocrystalline Zinc Oxide
Authors: Gálvez Saldaña Marco A. , Perez Oscar Perales , Guinel Maxime J-F
Published: September 2011

A systematic study was carried out to determine the effects of composition and grain size on the structural, optical and magnetic properties of pure ZnO and vanadium-doped ZnO nanocrystalline powders and films in the 0.0 at.% V - 6 at.% V range. The powders and films were synthesized via a sol-gel approach, where ethanolamine was used to increase the viscosity of the precursor solutions and promote the adhesion of the films onto quartz substrates. Powder X-ray diffraction confirmed the formation of ZnO (host oxide) after annealing of the precursors in air. The average grain size in the thin films ranged from 11 nm to 23 nm when the samples were annealed in air for one hour between 450ºC and 550ºC. UV-vis and photoluminescence confirmed the formation of the host oxide. Also, the photoluminescence intensity was found to be strongly dependent on the amount vanadium. Furthermore, it was found that the vanadium concentration and the annealing temperature play an important role in the ferromagnetic behavior of the material.
Temperature Dependent Optical Response of Si(100): Theory vs. Experiment
Authors: Shkrebtii A.I. , Heron J. , Cabellos J.L. , Witkowski N. , Pluchery O. , Mendoza B.S. , Borensztein Y.
Published: September 2011

We investigate theoretically and experimentally the temperature-dependent linear optical properties of the clean c(4×2) reconstructed Si(100) surface for a wide range of temperatures. We combine two theoretical formalisms: the first one incorporates the contribution of temperature-dependent atomic motion to the surface optical response and, the second uses a dielectric function layer-by-layer separation method. Using these formalisms, we model temperature-dependent reflectance anisotropy (RA) of this surface for the first time: finite temperature ab-initio Car-Parrinello Molecular Dynamics (CPMD) at different temperatures up to 1000 K provide temperature-dependent atomic structural inputs for optical calculations and subsequent average of dielectric functions. Experimentally, one-domain c(4x2) Si(100) surface was prepared and characterised by Reflectance Anisotropy Spectroscopy (RAS) in a temperature range between 300 K and 800 K. Good agreement between experiment and theory is demonstrated, including a temperature-induced red shift of both the surface and bulk optical peaks. Theoretical results indicate that the temperature-induced modification of the optical response is substantially more pronounced for the surface than for the bulk.
Electron position: jumping in double concentric quantum rings
Authors: Filikhin I. , Matinyan S. , Nimmo J. , Vlahovic B.
Published: September 2011

Semiconductor heterostructures as quantum dots or quantum rings (QR) demonstrate discrete atom-like energy level structure. In an atom the position of an electron can be changed by electromagnetic field influence with accompaniment of quantum number change. In present work we show that in the weak coupled Double Concentric Quantum Ring (DCQR), the electron jumping is possible due to tunneling accompanied with level anti-crossing which has a place in a magnetic field. We study DCQR composed of GaAs in an Al0.70Ga0.30As substrate under influence of a magnetic field. In our model the DCQR is considered within three dimensional single sub-band effective mass approach. When a magnetic field is applied in the z direction, perpendicular to the DCQR plane. The results of the numerical calculations for DCQR are presented for DCQRs of different geometry.
Defect-free and Defective Surfaces of the Pyrochlore Oxide La2Zr2O7: A Theoretical Study
Authors: Mantz Yves A.
Published: September 2011

In this work, the low index faces of lanthanum zirconate (La2Zr2O7, LZ) are studied at the level of density-functional theory, representing the first theoretical attempt to characterize the surfaces of a pyrochlore oxide. All possible surface terminations formed by cleaving a perfect crystal are considered, as well as selected defective surfaces. After deriving the expression for the free energy of an LZ surface, surface free energies are computed. The most stable surface terminations are identified, their geometric and electronic structures discussed, and a motivation provided for calculating ratios of certain surface free energies more accurately for comparison to experimental results that will be obtained.
Surface Modification of α-Fe2O3 Nanorod Array Photoanodes for Improved Light-Induced Water Splitting
Authors: Shen Shaohua , Kronawitter Coleman X. , Jiang Jiangang , Guo Liejin , Mao Samuel S.
Published: September 2011

α-Fe2O3 nanorod arrays were fabricated by a low-temperature aqueous chemical growth (ACG) technique and followed by an annealing process. For the surface doping of α-Fe2O3 nanorods, β-FeOOH nanorods obtained via ACG were coated with a thin layer of Cr3+ precursor solution by spin coating, and then underwent the annealing treatment in air. Conducting polymer polypyrrole (PPy) decorated α-Fe2O3 nanorods were prepared by electrodeposition method using malic acid contained pyrrole aqueous solution. Primary results showed that the photocurrents of α-Fe2O3 nanorod array photoanodes were greatly enhanced by surface doping of Cr3+, as well as PPy decoration. This might be due to the retarded charge recombination and promoted surface reaction rate of photogenerated holes with water. Further investigation on surface modification of α-Fe2O3 nanorod array photoanodes is currently conducted in our group.
Theoretical investigation of Er-O co-doping in hexagonal GaN
Authors: Sanna Simone , Gerstmann Uwe , Schmidt Wolf Gero
Published: September 2011

The co-doping of hexagonal GaN with Er and O is investigated by means of density functional calculations. Predominantly Er-O defect-pairs characterized by a binding energy around 0.5 eV are formed. Different geometric configurations with various orientations (i.e. axial and basal pairs with C3v or C1h symmetry) are expected with similar formation energies. Independent of the particular configuration, the presence of oxygen does not deeply affect the atomic structure and the electronic charge distribution around the Er centers. The relatively high binding energy suggests that Er-O pairs should survive thermal treatment. An investigation of the binding energy per bond indicates that on the other hand Er-Ox complexes (x=2,3,4) are not likely to be formed (differently from Er-O co-doped Si). Rather, as long as the oxygen fluence does not overtake the Er fluence, different oxygen ions will be bound to different Er-centers.
Dynamics of Water Confined on the Surface of Titania and Cassiterite Nanoparticles
Authors: Ross Nancy L. , Spencer Elinor C. , Levchenko Andrey A. , Kolesnikov Alexander I. , Abernathy Douglas L. , Boerio-Goates Juliana , Woodfield Brian F. , Navrotsky Alexandra , Li Guangshe , Wang Wei , Wesolowski David J.
Published: September 2011

We present low-temperature inelastic neutron scattering spectra collected on two metal oxide nanoparticle systems, isostructural TiO2 rutile and SnO2 cassiterite, between 0-550 meV. Data were collected on samples with varying levels of water coverage, and in the case of SnO2, particles of different sizes. This study provides a comprehensive understanding of the structure and dynamics of the water confined on the surface of these particles. The translational movement of water confined on the surface of these nanoparticles is suppressed relative to that in ice-Ih and water molecules on the surface of rutile nanoparticles are more strongly restrained that molecules residing on the surface of cassiterite nanoparticles. The INS spectra also indicate that the hydrogen bond network within the hydration layers on rutile is more perturbed than for water on cassiterite. This result is indicative of stronger water-surface interactions between water on the rutile nanoparticles than for water confined on the surface of cassiterite nanoparticles. These differences are consistent with the recently reported differences in the surface energy of these two nanoparticle systems.
Influence of Surface Preparation on Scanning Kelvin Probe Microscopy and Electron Backscatter Diffraction Analysis of Cross Sections of CdTe/CdS Solar Cells
Authors: Moutinho H.R. , Dhere R.G. , Jiang C.-S. , Al-Jassim M.M.
Published: September 2011

Electron backscatter diffraction (EBSD) provides information on the crystallographic structure of a sample, while scanning Kelvin probe microscopy (SKPM) provides information on its electrical properties. The advantage of these techniques is their high spatial resolution, which cannot be attained with any other techniques. However, because these techniques analyze the top layers of the sample, surface or cross section features directly influence the results of the measurements, and sample preparation is a main step in the analysis.

In this work we investigated different methods to prepare cross sections of CdTe/CdS solar cells for EBSD and SKPM analyses. We observed that procedures used to prepare surfaces for EBSD are not suitable to prepare cross sections, and we were able to develop a process using polishing and ion-beam milling. This process resulted in very good results and allowed us to reveal important aspects of the cross section of the CdTe films. For SKPM, polishing and a light ion-beam milling resulted in cross sections that provided good data. We were able to observe the depletion region on the CdTe film and the p-n junction as well as the interdiffusion layer between CdTe and CdS. However, preparing good-quality cross sections for SKPM is not a reproducible process, and artifacts are often observed.
Impact of thickness variation of the ZnO:Al window layer on optoelectronic properties of CIGSSe solar cells
Authors: Keller Jan , Knipper Martin , Parisi Jürgen , Riedel Ingo , Dalibor Thomas , Avellan Alejandro
Published: September 2011

We studied the thickness variation of equally doped ZnO:Al films used as conductive window layer in Cu(In,Ga)(Se,S)2 (CIGSSe) thin film solar cells. The IV-characteristics of solar cells with window layer thickness of d1=200nm exhibit a strong enhancement of the short-circuit current density JSC (ΔJSC = 3mA/cm2) as compared to samples with module-like ZnO:Al-film thickness (d2=1200nm). Accordingly, the quantum efficiency reveals the spectral regimes where the JSC-gain occurs. Moreover, current-voltage measurements reveal that the cells with thicker ZnO:Al exhibit slightly decreased open circuit voltage VOC. This finding can be assigned to a decreased net-doping density NA, which appears to be introduced by additional heat flux during the longer process time required for deposition of thicker ZnO:Al films. However, the improved efficiency of solar cells with thinner window layer comes along with an increase of the series resistance (RS) by almost a factor of 2, which will have consequences for the series connection of elements in a module. XRD-diffractograms and SEM cross-section imaging suggest that the enhanced RS in cells with thin ZnO:Al is not exclusively related to the thickness but is also due to a reduced (002)-texture and an elongated lateral charge carrier pathway.
High Haze and Low Resistive MgO/AZO Bi-layer Transparent Conducting Oxide for Thin Film Solar Cells
Authors: Kang Dong Won , Woo Jong Seok , Choi Sung Hwan , Lee Seung Yoon , Lee Heon Min. , Han Min Koo.
Published: September 2011

We have propsed MgO/AZO bi-layer transparent conducting oxide (TCO) for thin film solar cells. From XRD analysis, it was observed that the full width at half maximum of AZO decreased when it was grown on MgO precursor. The Hall mobility of MgO/AZO bi-layer was 17.5cm2/Vs, whereas that of AZO was 20.8cm2/Vs. These indicated that the crystallinity of AZO decreased by employing MgO precursor. However, the haze (=total diffusive transmittance/total transmittance) characteristics of highly crystalline AZO was significantly improved by MgO precursor. The average haze in the visible region increased from 14.3 to 48.2%, and that in the NIR region increased from 6.3 to 18.9%. The reflectance of microcrystalline silicon solar cell was decreased and external quantum efficiency was significantly improved by applying MgO/AZO bi-layer TCO. The efficiency of microcrystalline silicon solar cell with MgO/AZO bi-layer front TCO was 6.66%, whereas the efficiency of one with AZO single TCO was 5.19%.
Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.
Authors: Kinoshita K. , Yoda T. , Kishida S.
Published: September 2011

Conductive atomic-force microscopy (C-AFM) writing is attracting attention as a technique for clarifying the switching mechanism of resistive random-access memory (ReRAM) by providing a wide area filled with filaments, which can be regarded as one filament with large radius. We observed a C-AFM writing area of NiO films using SEM, and revealed a correlation between the contrast in a secondary electron image (SEI) and the resistance written by C-AFM. In addition, the dependence of the SEI contrast on the beam accelerating voltage (Vaccel) suggests that the resistance-change effect occurs near the surface of the NiO film. As for the effect of electron irradiation on the C-AFM writing area, it was shown that the resistance change effect was caused by exchanging oxygen with the atmosphere at the surface of the NiO film. This result suggests that the low resistance and high resistance areas are, respectively, p-type Ni1+δO (δ< 0) and insulating (stoichiometric) or n-type Ni1+δO (δ ≥0).
Upconversion In Rare-Earth Ion-Doped NaYF4 Crystals and Nanocolloids
Authors: Patel Darayas N. , Hardy Lauren A. , Smith Tabatha J. , Smith Eva S. , Wright Donald M.
Published: September 2011

Nano-colloids and nano-crystals doped with ions of rare-earth elements have recently attracted a lot of attention of scientific community. This attention is due to unique physical, chemical and optical properties attributed to nanometer size of the particles. They have great potential of being used in applications spanning from new types of lasers, especially blue and UV lasers, phosphorous display monitors, optical communications, and fluorescence imaging. In this paper we investigate the infrared-to-visible upconversion luminescence in bulk crystals doped with ytterbium and holmium co-doped and ytterbium and thulium co-doped NaYF4 upconversion phosphors. The phosphors were prepared by using simple co-precipitation synthetic method. The initially prepared phosphor has very weak upconversion fluorescence. The fluorescence significantly increased after the phosphor was annealed at a temperature of 600 0C. Nanocolloids of this phosphor were obtained using methanol as solvents and they were utilized as laser filling medium in photonic crystal fibers. Under 980 nm laser excitation very strong upconversion signals were obtained for ytterbium and holmium co-doped phosphor at 541 nm, 646 nm and 751 nm, and 376 nm, 476 nm, 646 nm, 696 nm and 803 nm for ytterbium and thulium co-doped phosphor. The particle sizes of the nanocolloids were analyzed using Atomic Force Microscope. The reported nanocolloids are good candidates for fluorescent biosensing applications and also as a new laser filling medium in fiber lasers.
Fabrication of Silicon on Borosilicate Glass Microarrays for Quantitative Live Cell Imaging
Authors: Martin David T. , Sandoval Sergio , Carter Andy , Rodwell Mark , Smith Stefan , Kummel Andrew C. , Messmer Davorka
Published: September 2011

Planar arrays of microwells were fabricated in Silicon on borosilicate glass (pyrex) substrates in order to facilitate live cell fluorescence imaging experiments for cells sequestered inside their own individual microenvironments for incubation and quantification of single cell seceretions. Two methods of deep silicon etching were compared: cryogenic deep reactive ion etching (DRIE) and time multiplexed DIRE (Bosch Process). A 200um Si wafer was bonded to a 500um pyrex substrate. Cryogenic DRIE allowed for the reliable fabrication of 75-100um deep microwells with 60x60um openings across a 10x10mm substrate while the Bosh Process allowed for etching entirely through the Si layer, producing 200um deep microwells with transparent bottoms and steep sidewalls while maintaining the target 60x60um opening geometry.
Optical and electrical properties of solution processable TiOx thin films for solar cell and sensor applications
Authors: Li Jiguang , Pu Lin , Gupta Mool C.
Published: September 2011

Recently, few tens of nanometer thin films of TiOx have been intensively studied in applications for organic solar cells as optical spacers, environmental protection and hole blocking. In this paper we provide initial measurements of optical and electrical properties of TiOx thin films and it’s applications in solar cell and sensor devices. The TiOx material was made through hydrolysis of the precursor synthesized from titanium isopropoxide, 2-methoxyethanol, and ethanolamine. The TiOx thin films of thickness between 20 nm to 120 nm were obtained by spin coating process. The refractive index of TiOx thin films were measured using an ellipsometric technique and an optical reflection method. At room temperature, the refractive index of TiOx thin film was found to be 1.77 at a wavelength of 600 nm. The variation of refractive index under various thermal annealing conditions was also studied. The increase in refractive index with high temperature thermal annealing process was observed, allowing the opportunity to obtain refractive index values between 1.77 and 2.57 at a wavelength 600 nm. The refractive index variation is due to the TiOx phase and density changes under thermal annealing.

The electrical resistance was measured by depositing a thin film of TiOx between ITO and Al electrode. The electrical resistivity of TiOx thin film was found to be 1.7×107 Ω.cm as measured by vertical transmission line method. We have also studied the variation of electrical resistivity with temperature. The temperature coefficient of electrical resistance for 60 nm TiOx thin film was demonstrated as - 6×10-3/°C. A linear temperature dependence of resistivity between the temperature values of 20 – 100 °C was observed.

The TiOx thin films have been demonstrated as a low cost solution processable antireflection layer for Si solar cells. The results indicate that the TiOx layer can reduce the surface reflection of the silicon as low as commonly used vacuum deposited Si3N4 thin films.
Oxidized Single-Walled Carbon Nanotubes: Removal of Carbonaceous Functionalized Material by Washing with Solvents or Base
Authors: Canto Elisa Del , Flavin Kevin , Movia Dania , Giordani Silvia
Published: September 2011

Oxidized single-walled carbon nanotubes (SWNTs) have been prepared following a widely reported two-step purification/oxidation procedure in the presence or absence of a treatment with base (NaOH). The oxidized nanotube samples washed with solvents or base appear close to identical with respect to both appearance and properties. Efficient removal of both metal and carbonaceous impurities and introduction of –COOH groups on the nanotube surface have been demonstrated by AFM, Raman and FTIR spectroscopy. Furthermore, persistence of optical properties was confirmed using UV-vis/NIR absorption and NIR photoluminescence spectroscopies.
Analysis on interface layer between Pt electrode and ferroelectric layer of solution-processed PZT capacitor
Authors: Pham Thanh V , Bui Trinh N Q , Phan Tue T , Miyasako Takaaki , Tokumitsu Eisuke , Shimoda Tatsuya
Published: September 2011

Pt/Pb(Zr0.4Ti0.6)O3 (PZT)/Pt capacitors were prepared by the sol-gel technique and their electric properties were analyzed. The asymmetry of polarization-electric field (P-E) and capacitor-voltage (C-V) curves exhibits existence of an interface layer (dead-layer) between top Pt electrode and PZT thin film. By conducting temperature dependant measurement, the Pt/PZT/Pt capacitor was confirmed to be Schottky emission conduction. In addition, barrier height of PZT contact calculated 0.67eV. On basic a series capacitors model and Schottky contact of Pt/PZT interface, the thickness and the dielectric constant of this dead-layer were estimated to be 6.4 nm and 170, respectively. Moreover, the dielectric constant of 900 was obtained for the real PZT ferroelectric layer. The existence of the dead-layer was also confirmed by the high resolution transmission electron microscopy (HR-TEM) observation and the energy dispersive X-ray (EDX) analysis on PZT ferroelectric layer in the Pt/PZT/Pt structure. Based on EDX analysis result, a 10-nm layer at Pt/PZT contact was suggested to be the dead-layer.
Properties of A-(Si,Ge) Materials and Devices grown using Chemical Annealing
Authors: Shyam Ashutosh , Congreve Daniel , Noack Max , Dalal Vikram
Published: September 2011

Chemical annealing is a powerful technique for controlling H bonding and optical absorption in amorphous semiconductors. We have shown previously that the use of careful chemical annealing by Argon can lower the bandgap of a-Si:H while maintaining electronic properties in both films and devices. In this work, we describe new work on chemical annealing of A-(Si,Ge):H films and devices. The technique consists in growing very thin layers (1-3 nm) of A-(Si,Ge) from mixtures of hydrogen, Silane and Germane, and then subjecting this thin layer to ion bombardment by Ar. The cycle is repeated many times to achieve the desired thickness of the intrinsic layer. The resulting film and device were measured for their composition using energy dispersive spectroscopy (EDS) analysis. We discovered that the composition itself, namely the Ge:Si ratio in the film, could be varied by changing the ion bombardment conditions. Lower energy bombardment led to a higher Ge:Si ratio for the same germane/Silane ratio in the gas phase. By controlling ion bombardment during the Ar annealing cycle, we were able to reduce the H content of the film and achieve good electronic properties. It will be shown that by appropriate control over ion energies, one can obtain films and devices which are of good quality and low bandgap as well.
Silicon Thin-Films from Nanoparticle dispersion: Tailoring Morphological, Electrical and Optical Characteristics.
Authors: Drahi Etienne , Blayac Sylvain , Benaben Patrick
Published: September 2011

Amorphous and microcrystalline silicon are currently used for electronic devices such as solar cells and thin-film transistors. This paper shows that silicon nanoparticle dispersion has the potential to be used as source material for polycrystalline silicon thin-film thus opening a route to solution processed silicon devices. After deposition, a classical thermal or microwave annealing step is used to induce the coalescence of the silicon nanoparticles. Both sintering techniques are studied in terms of morphology, electrical and optical properties.
Photoluminescence of Surface Modified Silicon Carbide Nanowires
Authors: Stewart Polite D. , Rich Ryan , Nemashkalo A. , Zerda T. W.
Published: September 2011

SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100°C and 1350°C. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The surface of the SiC nanowires is covered by an amorphous layer composed of amorphous SiC and various carbon and silicon compounds. The objective of the research was to modify the surface structure of the SiC nanowires, a step necessary for future surface functionalization. The acid etched nanowires were analyzed using FTIR, TEM, x-ray diffraction, and photoluminescence. The concentration of Si-Ox groups in untreated specimens was estimated to account for 1% of the total mass of a 2 nm thick amorphous layer wrapping around all structures. After treatment in HF this concentration was negligibly small. TEM images show that after treatment the amorphous layer was removed but the diameter of the core remained unchanged. The surface was roughened and multiple pits formed on that surface. X-ray line broadening analysis indicates a significant contribution due to stress caused by dislocations and planar faults. After acid etching line narrowing was observed and attributed to stress reduction and elimination of the smallest wires. The photoluminescence signal from as received samples was very weak but increased greatly after acid treatment, indicating that the signal is related to surface defects. Measurements at low temperatures, 8 K, showed peaks due to point and planar defects.
III-V CMOS technologies on Si platform
Authors: Takenaka M. , Takagi S.
Published: September 2011

The heterogeneous integration of III-V semiconductors with the Si platform is expected to provide high performance CMOS logic for future technology nodes because of high electron mobility and low electron effective mass in III-V semiconductors. However, there are many technology issues to be addressed for integrating III-V MOSFETs on the Si platform as follow; high-quality MOS interface formation, low resistivity source/drain formation, and high-quality III-V film formation on Si substrates. In this paper, we present several possible solutions for the above critical issues of III-V MOSFETs on the Si platform. In addition, we present the III-V CMOS photonics platform on which III-V MOSFETs and III-V photonics can be monolithically integrated for ultra-large scale electric-optic integrated circuits.
Feasibility studies of using PED deposited Sn-doped In2O3 Films for Organic Electronic Devices
Authors: Kotru Sushma , Frazier Rachel M. , Chen Mengwei , Nampoori Harshan V. , Daly Daniel T.
Published: September 2011

In this work, pulsed electron deposition was used to prepare thin films of ITO on plastic substrates. These films were used as electrodes for organic photovoltaic devices to determine the feasibility of using PED deposited ITO as electrodes. ITO films deposited on plastic showed optical transmission values as high as 85% for films deposited at high pressures. Films deposited on plastic substrates were further used to prepare a test organic solar cell, with ITO as the bottom electrode. The device performance was seen to depend on the quality of the ITO electrode, and the ITO film deposited at the lowest oxygen pressure was found to be the best electrode for the organic photovoltaic device.
RF-Sputtered ZnO Thin Films: The Tailoring of Structural, Electrical and Optical Properties
Authors: Besleaga Cristina , Stan George E. , Ion Lucian , Antohe Stefan
Published: September 2011

We report on the influence of radio-frequency magnetron sputtering variables (working pressure and deposition atmosphere) and post-deposition thermal treatment processing upon the structural, optical and electrical properties of c-axis highly textured ZnO thin films. The films’ crystallinity increased progressively with argon pressure for the inert atmosphere experiments and with the oxygen dilution in the working atmosphere (up to 10%) for the reactive atmosphere experiments. The post-deposition annealing treatment at 450°C/1h in air reduced the strain in the ZnO films and enhanced their crystallinity and texturing. The ZnO films had an average transmittance of ∼90% in visible range and an average band-gap of ∼3.4 eV, regardless of the sputtering variables used. The samples prepared at the higher argon pressure (0.45 Pa) had a resistivity with one order of magnitude smaller than the samples prepared at the lower pressures.
Modeling the Sputter Deposition of Thin Film Photovoltaics using Long Time Scale Dynamics Techniques
Authors: Blackwell S. , Smith R. , Kenny S. D. , Walls J. M.
Published: September 2011

Results are presented for modeling the deposition of Ag and rutile TiO2. The model can be used to examine the effect of varying experimental parameters, such as the substrate bias in the magnetron and the stoichiometry of the deposition species. We illustrate how long time scale dynamics techniques can be used to model the process over experimental time scales. Long time dynamics is achieved through an on-the-fly Kinetic Monte Carlo (otf-KMC) method, which determines diffusion pathways and barriers, in parallel, with no prior knowledge of the involved transitions. Using this otf-KMC method we have modeled the deposition of Ag and TiO2 for various plasma deposition energies, in the range 1 eV to 100 eV. It was found that Ag {111} produces the most crystalline growth when deposited at 40 eV. TiO2 growth showed that at energies of 1 eV and 100 eV a porous structure occurs with void formation. At deposition energies of 30 eV and 40 eV, a more dense and crystalline rutile growth forms. The results show that deposition energy plays an important role in the resulting thin film quality and surface morphology.
ATMOSPHERIC PRESSURE MICROWAVE PLASMA ENHANCED COATING OF CARBON NANOTUBE RIBBONS
Authors: Kotecha Rutvij , Davison Gilpin A. , Jayasinghe Chaminda , Schulz Mark , Shanov Vesselin
Published: September 2011

CNT arrays were synthesized by Chemical Vapor Deposition (CVD) and spun into ribbons, which were coated using Atmospheric Pressure Microwave Plasma system. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) characterization of CNT ribbons indicated the presence of polymer films with CF2 as a repeat unit. Atomic concentration of C, F and O in the coated films was estimated from X-ray Photoelectron Spectroscopy (XPS) data. Types of bonding between the elements in the coated films was studied by curve fitting of C 1s XPS spectra.
Vacuum Deposited Erbium-Doped NIR Luminescent Organic Thin Films For 1.5 μm Optical Amplification Applications
Authors: Divay Laurent , Galindo Christophe , Chastaing Evelyne , Bisaro Renato , Wyczisk Frédéric , Le Barny Pierre
Published: September 2011

Inorganic erbium-doped glasses are widely used in telecommunications due to the sharp intra-atomic 4I13/2 → 4I15/2 transition in the 4f orbital of erbium resulting in an emission at ∼ 1.5 μm, which is the low loss window of silica optical fibres. The limited erbium concentration of about 1020 ions.cm−3 in inorganic erbium-doped glasses and the low absorption coefficient of the Er3+ ions, imply that relatively long lengths of fibre are required. The organic erbium complexes present higher absorption cross sections due to the photosensitization of erbium by organic conjugated ligands and broader emission bands than those of the free Er3+ ion. Such properties open the possibility to develop compact, low power and broadband infrared emitting devices. We present the study of a highly doped organic thin film obtained from organic erbium complexes deposited by a vacuum sublimation technique. This deposition method allows the realization of an erbium-doped thin film without the help of an organic polymer matrix, which is a potential source of vibrationnal luminescence quenching. The ligands used in the present study are fluorinated in order to limit the vibrationnal quenching of the ligand itself, and to increase the volatility of the complexes. In this paper, we report the synthesis, the sublimation process and the characterization of the thin films.
Nanotextured Electrical Immunoassays for Ultrasensitive Protein Detection
Authors: Mertz Timothy O. , Vattipalli Krishna , Barrett Tom , Carruthers John , Prasad Shalini
Published: September 2011

This paper describes the development of nanomonitors, which are electrical immunoassays for detection of multiple protein biomarkers. These devices are hybrid sensors with micro-fabricated electrode arrays on a silicon substrate, and integrated nanoporous alumina membranes to provide protein confinement and signal amplification. The disease biomarkers C-reactive protein and Myeloperoxidase have been detected by the nanomonitors in ultra-low concentrations. Proteins were detected in pure samples, human serum, and patient blood samples. The detection accuracy and sensitivity of the nanomonitors in patient samples was comparable to the Enzyme Linked Immunosorbent Assay (ELISA) method of protein detection. Nanomonitors provide the additional benefits of being rapid, label-free, sensitive, and cost effective, providing improvements over traditional protein detection methods, and having potential applications in disease diagnosis.
Recent Progress in Thermoelectric Power Generation Systems for Commercial Applications
Authors: LaGrandeur John W. , Bell Lon E. , Crane Douglas T.
Published: September 2011

Thermoelectric (TE) devices are solid state heat engines that directly convert thermal to electrical power (Seebeck Effect) and the reverse, electrical to thermal power (Peltier Effect). The phenomena were first discovered over 150 years ago and until recently have been more of a scientific curiosity than a practical technology of commercial interest. However, as governments impose regulations on greenhouse gas emissions and as the long-term availability of fossil fuels is questioned, alternative technologies, including thermoelectrics, are being explored to meet the challenges that arise from these new conditions.

Amerigon, the parent of BSST, is the largest supplier of thermoelectric (TE) devices to the automotive market. Over the last ten years BSST has been developing TE technology for the transportation market. Recent advancements at the system level made by BSST and improvements in TE materials made by several organizations indicate a path to improved performance and economic feasibility. This report discusses development of TE Generator (TEG) technology and of a TEG system installed in the power train of internal combustion engines for the purpose of converting waste heat to electric power. Our work has been made possible, in part, through sponsorship by the United States Department of Energy Office of Vehicle Technologies. The BMW Group, Ford Motor Company and Faurecia are partners in the BSST-led program.
Semimetal-Semiconductor Transitions in Semimetal Bismuth-Antimony Nanowires Induced by Size Quantization, Strain, and Magnetic Field
Authors: Nikolaeva Albina A. , Konopko Leonid A. , Huber Tito E. , Bodiul Pavel P. , Popov Ivan A. , Moloshnik Eugen F.
Published: September 2011

In this work, we study glass-coated single-crystal Bi98Sb02 wires obtained by liquid phase casting.

Semimetal Bi98Sb02 nanowires exhibited a "semiconductor" behavior of the temperature dependence R(T) for wire diameters <400 nm, which is significantly higher than the critical diameter (70 nm) for similar dependences R(T) of pure bismuth nanowires. The thermopower sign reversal in the temperature dependence α(T) was found to depend on the wire diameter d. The effect is interpreted in terms of manifestation of the quantum size effect, based on the appearance a new scattering channel stimulated by fluctuations in the diameter d.

The effect of negative magnetoresistance in a perpendicular magnetic field was observed for the first time both at H | | C3 and H | | C2 in magnetic fields of 1 T.

It is shown that a semimetal-semiconductor transition can be controlled using an elastic strain and a strong magnetic field, which lead to a significant shift of the band boundaries of the energy extrema in the bands
Simultaneous gene delivery and tracking of cells using fluorescent upconversion nanoparticles for cell therapy
Authors: Jayakumar Muthu Kumara Gnanasammandhan , Zhang Yong
Published: September 2011

Cell therapy has attained new heights with the current developments in the field of stem cell therapy and is often done in combination with gene therapy. Much research has gone into developing safe vectors to deliver genes to the cells used for cell therapy and also in tracking the transplanted cells and determining their fate. Even though viral vectors are very efficient in gene delivery, there are major safety concerns related to it. Herein, we report the use of novel fluorescent upconversion nanoparticles (UCNs) for simultaneous gene delivery and tracking of cells for cell-based therapies. It is a safe alternative to viral vectors and offers imaging capabilities too, which will give an insight on the fate of transplanted cells.
Ion Irradiation on Phase Change Materials
Authors: Rimini Emanuele , Carria Egidio , Mio Antonio Massimiliano , Miritello Maria , Gibilisco Santo , Bongiorno Corrado , D’Arrigo Giuseppe , Spinella Corrado , D’Acapito Francesco , Grimaldi Maria Grazia
Published: September 2011

Ion irradiation with 130 keV Ge+ or 120 keV Sb+ has modified, by thermal spike effect, the local atomic arrangement in the structure of as-deposited sputtered amorphous GeTe and Ge2Sb2Te5 thin films. The changes in the local order have been analyzed by Raman and EXAFS spectroscopy. In addition the crystallization kinetic, measured by “in situ” time resolved reflectivity and optical microscope analysis, is found to be faster in the irradiated samples. The nucleation rate and the grain growth velocity are enhanced by a factor of about ten with respect to the unirradiated samples in the investigated temperature range (120°C –170°C).
Post-CMOS Integration of Nanomechanical Devices by Direct Ion Beam Irradiation of Silicon
Authors: Pérez-Murano Francesc , Rius G. , Llobet J. , Borrisé X.
Published: September 2011

We present the development of CMOS compatible focused ion beam (FIB)-based method for the fabrication of nanomechanical devices. With only two step process, (i) patterning by direct exposure of silicon by the gallium beam and (ii) transfer of features to the structural layer by standard microfabrication silicon etching processes, operational devices are obtained. The ion beam modified silicon, acting as the etching mask, presents an outstanding robustness for both chemical and reactive ion etching process, enabling a simplified fabrication of nanomechanical devices with sub-micron resolution. As an example, single and double clamped silicon beams have been successfully produced. The compatibility check to guarantee the integrity of the electronic performance of CMOS circuits after the energetic beam irradiation is also investigated. Patterning based on direct ion beam exposure of silicon and etching presents advantages in comparison with more conventional lithography methods, such as electron beam lithography, since it is realized without the use of any resist media, which is especially challenging for the non-flat CMOS pre-fabricated substrates.
Structural Changes Induced by Swift Heavy Ion Beams in tensile strained Al (1-x)InxN /GaN Hetero-structures
Authors: Devaraju G. , Pathak Anand P. , Srinivasa Rao N. , Saikiran V. , Sathish N. , Nageswara Rao S. V.S
Published: September 2011

We report here swift heavy ion (SHI) irradiation induced effects on structural and surface properties of III-nitrides. Tensile strained Al(1-x)InxN/GaN Hetero-Structures (HS) were realized using Metal Organic Chemical Vapour Despotion (MOCVD) technique with indium composition as 12%. Ion species and energies are chosen such that electronic energy deposition rates differ significantly in Al(1-x)InxN and are essential for understanding the ion beam interactions at the interfaces. Thus the samples were irradiated with 80 MeV Ni6+ and 100 MeV Ag7+ ions at varied fluence (1×1012 and 3 ×1012 ions/cm2) to alter the structural properties. Under this energy regime, the structural changes in Al(1-x)InxN would occur due to the intense ultrafast excitations of electrons along the ion path. We employed different characterization techniques like High Resolution X- ray Diffraction (HRXRD) and Rutherford back scattering spectrometry (RBS) for composition, thickness and strain. HRXRD and RBS experimental spectra have been fitted with Philip’s epitaxy SIMNRA code, which yields thickness and composition from compound semiconductors. The surface morphology of pristine and irradiated samples is studied and compared by Atomic Force Microscopy (AFM).
Ion Beams for synthesis and modification of nanostructures in semiconductors
Authors: Pathak Anand P. , Srinivasa Rao N. , Devaraju G. , Saikiran V. , Nageswara Rao S. V. S.
Published: September 2011

Swift heavy ion irradiation is one of the most versatile techniques to alter and monitor the properties of materials in general and at nanoscale in particular. The materials modification can be controlled by a suitable choice of ion beam parameters such as ion species, fluence and incident energy. It is also possible to choose these ion beam parameters in such a way that ion beam irradiation can cause annealing of defects or creation of defects at a particular depth. Here, we present a review of our work on swift heavy ion induced modifications of III-V semiconductor heterostructures and multi-quantum wells in addition to synthesis of Ge nanocrystals using atom beam co-sputtering, RF magnetron sputtering followed by RTA, swift heavy ion irradiation, respectively. We also present the growth of GeO2 nanocrystals by microwave annealing. These samples were studied by using XRD, Raman, PL, RBS and TEM. The observed results and their explanation using possible mechanisms are discussed in detail.
Biocompatible luminescent nanoparticles on the basis of calcium phosphate
Authors: Dembski Sofia , Milde Moritz , Dassonneville Emeline , Gellermann Carsten , Klockenbring Torsten , Dyrba Marcel , Schweizer Stefan
Published: September 2011

Luminescent lanthanide doped SiO2/Hydroxylapatite (HAp) core/shell nanoparticles (NPs) were synthesized by sol-gel technology. The resulting NPs exhibited an amorphous SiO2 core and a crystalline luminescent shell. The formation of the HAp layer was possible at pH 8.5. The characterization of the resulting NPs was done by transmission electron microscopy, X-ray diffraction analysis, inductively-coupled plasma combined with optical emission spectrometry, and photoluminescence spectroscopy. Additionally, the newly developed SiO2/HAp:Ln3+ core/shell NPs were tested for their biocompatibility, e. g. by an in vitro cell culture based assay.
How do different surface modification strategies affect the properties of MnO nanoparticles for biomedical applications? Comparison of PEGylated and SiO2-coated MnO nanoparticles
Authors: Schladt Thomas D. , Koll Kerstin , Bauer Heiko , Weber Stefan , Schreiber Laura M. , Tremel Wolfgang
Published: September 2011

MnO nanoparticles (NPs) were surface functionalized by two different approaches, (1) using a dopamine-poly(ethylene glycol) (PEG) (DA-PEG) ligand and (2) by encapsulation within a thin silica shell applying a novel approach. Both MnO@DA-PEG and MnO@SiO2 NPs exhibited excellent long-term stability in physiological solutions. In addition, the cytotoxic potential of both materials was comparatively low. Furthermore, owing to the magnetic properties of MnO NPs, both MnO@DA-PEG and MnO@SiO2 lead to a shortening of the longitudinal relaxation time T1 in MRI. In comparison to the PEGylated MnO NPs, the presence of a thin silica shell led to a greater stability of the MnO core itself by preventing excessive Mn ion leaching into aqueous solution.
Structural and Magnetic Properties of Cobal Ferrite - Barium Titanate Nanotube Arrays
Authors: Bueno-Baques Dario , Corral-Flores Veronica , Morales-Carrillo Norma A. , Torres Alejandro , Camacho-Montes Hector , Ziolo Ronald F.
Published: September 2011

Cobalt Ferrite/Barium Titanate nanotube arrays were obtained in anodic aluminum oxide templates (AAO) of 100 nm pore diameter by a two step sol-gel process. Each phase was grown in several wetting – drying cycles starting from the cobalt ferrite layers with the barium titanate on top. As-dried composite structures were sintered at 700 C. The composite nanotubes showed a fine polycrystalline microstructure with an average grain size of 5 nm. The formation of both spinel and perovskite structures was verified by High Resolution Transmission Electron Microscopy (HR-TEM) on isolated nanotubes. The growing rate by layer was found to be lower for the BaTiO3 on top of CoFe2O4 than the later on top of the AAO. Wall sizes were estimated by Z-contrast as 9.8 nm for one layer of CoFe2O4 and 6.6 nm for six layers of BaTiO3. Magnetic properties were studied by VSM. Samples showed ferromagnetic behavior with low coercive values. By means of a finite element model the deformation and stress on the piezoelectric phase was estimated and used to simulate the magnetization reversal under stress in the composite nanotubes, using an updated micromagnetic framework to include the magnetostriction effect. Simulation results showed that a curling mode is expected with opposite vortex states at the end of the nanotubes. The change in the vortex domain structure under voltage driven applied stress is presented and discussed.
Effect of Chemical Solutions and Surface Wettability on the Stability of Advanced Porous Low-k Materials
Authors: Le Q. T. , Vereecke G. , Bertha A. , Kesters E. , Lux M. , Struyf H.
Published: September 2011

This study focuses on the impact of chemical solutions (hydrogen fluoride and tetramethylammonium hydroxide) on the change in properties of advanced porous low-k films. It was shown that there is no preferential removal of methyl groups during the dissolution process. With regard to wetting agents, the presence of isopropyl alcohol or surfactant (polyoxyethylene ether and alkoxylated diol type) in HF solution slowed down low-k film etching. Complete removal of surfactant residual usually requires an additional rinsing step using a low-molecular weight alcohol such as isopropyl alcohol.
Room temperature sub-diffractional plasmon laser
Authors: Ma R.-M. , Oulton R. F. , Sorger V. J. , Bartal G. , Zhang X.
Published: September 2011

We report plasmon lasers with strong cavity feedback and optical confinement to 1/20th wavelength. Strong feedback arises from total internal reflection of plasmons, while confinement enhances the spontaneous emission rate by up to 18 times.