bluuebunny/crossref_metadata_2025 huggingface dataset:
Calibration of Gravitational Radiation Antenna by Dynamic Newton Field
Authors: Suzuki Toshikazu , Tsubono Kimio , Kuroda Kazuaki , Hirakawa Hiromasa
Published: November 2005

A method of calibrating antennas for gravitational radiation is presented. The method uses the dynamic Newton field of a rotating body and is suitable in experiments for frequencies up to several hundred hertz.
Optical and Electrical Properties of CuIn5S8 and AgIn5S8 Single Crystals
Authors: Usujima Akihiro , Takeuchi Satoshi , Endo Saburo , Irie Taizo
Published: November 2005

The energy gaps at 300 and 96 K of CuIn5S8 and AgIn5S8 single crystals were determined from the optical absorption measurements. The peaks of the photoconductive spectra observed at 300 and 77 K were in good agreement with the energy gaps. The resistivity and the mobility for the samples with less sulphur than the stoichiometric one were determined from the electrical measurements.
Effects of Surface Acoustic Waves on Molecular Orientation in Nematic Liquid Crystals
Authors: Sato Susumu , Ueda Hiroko
Published: November 2005

Periodic parallel domains are observed in oriented liquid crystal cells by applying surface acoustic waves (SAW). In homogeneous cells, the period of the domains is nearly proportional to that of the Williams domains and is independent of the frequency of the applied SAW. The formation of the periodic domains is explained by the convection flow of liquid crystals. Another type of periodic domain is observed in the homeotropic cells. The period does not depend on the spacer thickness, but depends on the frequency of SAW. Movements of domains and flow of liquid crystals are observed by increasing the applied SAW intensity.
Radiation Defects in n-Type Germanium Studied by Deep Level Transient Spectroscopy
Authors: Fukuoka Noboru , Saito Haruo
Published: November 2005

Defect levels produced in n-type germanium by 1.5 MeV electron irradiation and their annealing behaviour were studied by DLTS. Two electron traps located at E
c-0.20 eV and E
c-0.40 eV and a hole trap at E
v+0.24 eV were found to be formed by the irradiation with introduction rates of 0.05/cm, 0.54/cm and 0.22/cm respectively. When the specimen was annealed at 370 K for 10 minutes, a considerable part of the E
c-0.20 eV level was observed to be transformed into a new electron trap at E
c-0.23 eV.
Enhancement of Flux Sensitivity by Parallel Operation of rf SQUID
Authors: Furukawa Hisao , Shirae Kimisuke , Kishida Kozo
Published: November 2005

A new configuration, parallel operation of a number of rf SQUID elements provides enhanced sensitivity. This parallel operated elements has been fabricated by Nb thin film on single substrate, and drived by a single tank circuit. The variations of step pattern, interference pattern and flux sensitivity by increasing the number of elements have been measured. By performing parallel operation of four rf SQUID elements, the amplitude of interference pattern is increased two times as large as for single element case, and this agree well with theoretical analysis. Consequently, flux sensitivity is also enhanced similarly.
Polytype Superlattices and Multi-Heterojunctions
Authors: Esaki L. , Chang L. L. , Mendez E. E.
Published: November 2005

We discuss the significant implications of polytype superlattices and multi-heterostructures consisting of combinations of three semiconductors: AlSb, GaSb and InAs, which are compatible for heteroepitaxy. The triple-constituent multilayer heterostructures appear to offer not only a novel class of materials for scientific investigations but also a new breed of semiconductor devices for high-speed applications.
ESR Line Shape in the Incommensurate Phase of K2SeO4Crystal Doped with VO2+Ions
Authors: Fukui Minoru , Abe Ryuji
Published: November 2005

The temperature dependence of ESR spectra of VO2+ions has been studied in the incommensurate phase of K2SeO4crystal. The line shape with asymmetric edge-singularities was analysed in terms of an incommensurate spatial modulation of the hyperfine tensor. By using the plane wave modulation model, a very good fit between the experimental and theoretical line shapes was obtained in the temperature range fromTIto ≃TC+10 K. The temperature dependence of the amplitude of the incommensurate modulation reveals that the index β for the amplitude is 0.48±0.05 in this temperature range.
Radiative Recombination on Dislocations in Silicon Crystals
Authors: Suezawa Masashi , Sasaki Yoshiro , Nishina Yuichiro , Sumino Koji
Published: November 2005

Photoluminescence spectra in plastically deformed silicon crystals have been measured to investigate the dislocation-induced energy state of electrons in the band gap. Plastic deformation gives rise to four luminescence lines irrespective of the type of conduction of the crystal. The luminescent lights are strongly polarized in the direction parallel to the dislocation line. A phenomenological expression which relates the luminescent intensity with parameters characterizing the dislocations is deduced on the basis of the experimental results.
Photoelectric p-n Junction Cells Using Organic Dyes
Authors: Kudo Kazuhiro , Moriizumi Toyosaka
Published: November 2005

Organic p-n diodes based on n-type and p-type dyes have been fabricated. The cells have layered structure of ITO/n-type dye/p-type dye/Ag. They show rectifying properties and photovoltaic effects. The open-circuit photovoltage as high as 0.75 V and the short-circuit photocurrent of about 0.13 mA/cm2 were obtained. The present values are significantly higher than those reported previously.
Influence of Boundaries on the Phase Transition Point in Ferroelectric Smectics
Authors: Pikin Sergej Alekseevich , Yoshino Katsumi
Published: November 2005

The influence of boundary conditions on the smectic A-C* phase transition has been studied.
From a consideration of the free energy under the anchoring condition with planar orientation of moelcules on two boundaries, it is shown that the phase transition temperature from the smectic-A to smectic-C phases decreases with decreasing layer thickness. This is confirmed by experiment.
GaInAsP/InP Surface Emitting Injection Laser with Buried Heterostructures
Authors: Okuda Hajime , Soda Haruhisa , Moriki Kazunori , Motegi Yoshihiro , Iga Kenichi
Published: November 2005

The first surface emitting (SE) injection laser (λ≃1.2 µm) with buried structure has been realized from the GaInAsP/InP system. The circular active region of 50 µm in diameter is buried by employing the LPE growth of i) maskless planar buried heterostructure (PBH) and ii) conventional masked buried heterostructure (BH). The near field was of a circular pattern of about 50 µm in diameter and it has been confirmed that the lasing occurred in the direction perpendicular to the surface by comparing output powers from the surface and the edge. The lowest threshold current of the BH SE laser was 520 mA (26 kA/cm2) at 77 K. The PBH SE laser had somewhat higher threshold than the BH SE laser at the present stage, but the PBH structure seems to be suitable for the SE laser because it has been found that it is easy to grow flatter surfaces.
Brightness-Luminance Ratio of a Liquid Crystal Display in a Transmission Type
Authors: Shimomura Teruo
Published: November 2005

A psychological experiment was executed binocularly for a bipartite or a separated field. The viewing subtence was 2° in both fields and the spatial separation in a separated field was 1°. Seven observers adjusted the luminance of a white comparison stimulus to appear equally as bright as a test stimulus of a liquid crystal cell. Red-, green-, blue-color under the tunable birefringence mode were shown as a test stimulus. The ratios of the mean observer in a bipartite field were 1.35±0.23 for red, 1.20±0.13 for green, 1.06±0.13 for blue, and lower than those in a separated field.
Orientation Behaviors in Polyvinylidene Fluoride Film under Electric Field
Authors: Takahashi Nobuyuki , Odajima Akira
Published: November 2005

Orientation behaviors in polyvinylidene fluoride (form-I crystal) film under electric field are investigated by using the X-ray diffraction method. Remarkable changes in the profile for the (111) reflection have been observed at room temperature on applying a field of 150 MV/m, and a part of the intensity is recovered instantly on removal of the field.
Changes in the profile and reorientation distribution show that the recoverable part of the orientation is not due to small crystallites but is due to crystallites that have suffered some structural change under the field.
Radial Plasma Confinement Time in the Central Cell of GAMMA 6 Determined from Measurements with a Charge Collector
Authors: Yatsu Kiyoshi , Wakaida Ikuo , Kiyohara Yoichi , Sakasai Akira , Miyoshi Syoichi
Published: November 2005

The plasma loss flux in the tandem mirror GAMMA 6 has been measured with charge collectors. The radial plasma confinement time in the central cell of GAMMA 6 is determined to be about 260 µs from the measured plasma loss flux.
Investigation of 1.3- µm InGaAsP/InP Lasers by the Measurement of Current-Injection-Induced Acoustic (CIA) Signals
Authors: Suemune Ikuo , Yamanishi Masamichi , Mikoshiba Nobuo
Published: November 2005

1.3-µm InGaAsP/InP buried-hetero structure (BH) and oxide-stripe semiconductor lasers were investigated by the measurement of current-injection-induced acoustic (CIA) signals. The results show that gain suppression occurs well below the threshold current and that a large internal optical loss exists and is saturated at about threshold regardless of the laser structure.
Thermal Desorption of 15NO Chemisorbed on Polycrystalline Rhenium Surfaces
Authors: Kioka Toshihide , Miki Hirofumi , Kawasaki Koji
Published: November 2005

The chemisorption of nitric oxide, using 15NO, on polycrystalline rhenium has been studied by thermal desorption mass spectroscopy to make clear the chemisorption states of NO.
At low coverage NO is adsorbed dissociatively on Re surfaces and at higher coverage NO is adsorbed molecularly at room temperature.
NO dissociates prior to and during thermal desorption and the thermal desorption spectra of N2 from NO chemisorbed on Re can be explained from the dissociative reaction in adsorption-desorption processes.
Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
Authors: Yamasaki Satoshi , Okushi Hideyo , Matsuda Akihisa , Oheda Hidetoshi , Hata Nobuhiro , Tanaka Kazunobu
Published: November 2005

We have theoretically derived the photoacoustic signal of thin films accounting for the multiple-reflection effect, and presented the simple analytical procedure for determining the detailed information on the thermal parameters of the material. The PAS has been employed on a-Si:H films and the optical absorption spectra down to 1 cm-1 were obtained, which is crucially discussed in comparison with the data by the transmission method.
Modulated Photocurrent in Hydrogenated Amorphous Silicon
Authors: Yamaguchi Masaaki , Morigaki Kazuo
Published: November 2005

We have measured the amplitude and phase shift of modulated photocurrents in a-Si:H. The experimental results are interpreted in terms of a rate equation model involving the excitation processes, trapping and recombination.
A Limitation on the Ring Current Formed by Pulsed Electron Beam Injection
Authors: Narihara Kazumichi
Published: November 2005

A limitation on the ring current formed by pulsed electron beam injection into a plasma is derived on the basis of the conservation of the canonical angular momentum. Assuming that the pulse width of the electron beam is much smaller than the decay time of the return current induced in the plasma we obtain an upper limit for the ring current: I
R<17.0 √γo
2-1F/2g (kA), where F and g are geometrical factors of the order of unity and γo is the relativistic factor for the electron beam at injection.
Colorimetric Study of Multiplexability for Twisted Nematic Liquid Crystal Displays
Authors: Ozawa Ryoji , Shimomura Teruo , Mada Hitoshi , Kobayashi Shunsuke
Published: November 2005

The multiplexability of twisted nematic (TN) type liquid crystal displays (LCDs) have been examined using colorimetry based on the 1976 CIE (L
*
u
*
v
*) color space. Two kinds of practical polarizers, developed for calculators and watches, were used for multiplexed TN-LCDs. The results obtained by colorimetry were compared with those by conventional physical photometry.
i) Colorimetric evaluation is effective for characterizing multiplexed LCDs. ii) The number of scanned lines obtained by colorimetry is larger by a factor of three compared with that obtained by the conventional method, iii) Color formation as well as multiplexability are strongly dependent on the nature of the polarizers.
Electromagnetic Cyclotron Harmonic Waves
Authors: Ohnuma Toshiro , Watanabe Tsuguhiro , Hamamatsu Kiyotaka
Published: November 2005

Electromagnetic electron cyclotron harmonic waves just below the electron cyclotron harmonics are investigated numerically and experimentally. Backward waves which are observed to propagate nearly perpendicular to the magnetic field just below the electron cyclotron frequency in high density magnetoplasma are confirmed to be in accord with the theoretical electromagnetic cyclotron waves.
Direct Etching of Resists by UV Light
Authors: Ueno Nobuo , Konishi Shinji , Tanimoto Keisuke , Sugita Kazuyuki
Published: November 2005

Etching characteristics of some positive working resists by means of ultraviolet light irradiation were evaluated. Degradable resist polymers were found to be etched effectively in a room atmosphere and at a comparatively low temperature. The pure PMIPK [poly (methyl isopropenyl ketone)] showed that the greatest etching rate and fine resist patterns could be obtained directly by the UV-etching method. It is pointed out that the UV-etching method can be applied, as the simplest dry method, to making resist patterns as well as to ashing the resists.
Pattern Laser Annealing by a Pulsed Laser
Authors: Komiya Yoshio , Hoh Koichiro , Murakami Koichi , Takahashi Tetsuo , Tarui Yasuo
Published: November 2005

Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates.
To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.
Effect of Impurities on Liquid Crystal Molecular Orientation on Inorganic Surfaces
Authors: Ohgawara Masao , Uchida Tatsuo
Published: November 2005

The liquid crystal orientation on various surfaces were investigated by a method using the principle of chromatography, which is useful for observing the true orientation by eliminating impurities in the liquid crystal materials. It was found that pure liquid crystals aligned parallel to various inorganic flat surfaces. It was concluded from the results that experimental results of the molecular orientation reported by several authors were affected by impurities produced by the degradation of liquid crystal materials.
Wide Optical-Gap, Photoconductive a-SixN1-x:H
Authors: Kurata Hiroyuki , Hirose Masataka , Osaka Yukio
Published: November 2005

The electrical and optical properties of a-Si
x
N1-x
:H prepared by the glow discharge of a SiH4-NH3-H2 gas mixture have been systematically investigated as a function of the ammonia-to-silane molar fraction. The optical bandgap increases smoothly from 1.75 eV to 5.5 eV as the molar fraction increases. A normalized photoconductivity ηµτ larger than 10-6 cm2V-1 is easily obtained in the ammonia fraction range 3.3×10-3 to 0.60, and it has a maximum (ηµτ≧4.8 ×10-5 cm2V1) around a fraction of 0.1.
Energy-Band Bend Shifts at an N-Type GaAs(100) Surface Exposed to O2and Electron-Irradiated as Detected by UPS
Authors: Hiramatsu Tomoyasu , Minami Yoichiro , Takayama Satoshi , Kimata Morihiko
Published: November 2005

Energy-band bends at an n-type (100) GaAs surface were measured using UPS. When the GaAs surface was electron-irradiated after, or during, exposure of the surface to an O2atmosphere, the energy-band bend at the surface shifted downward for the duration of the exposure and/or electron-irradiation. This downward shift is similar to that observed on a GaAs surface annealed in an O2atmosphere, and both effects are explained by a mechanism involving stimulated atomic oxygen adsorption on the GaAs surface.
Photoinduced Elastic Changes in Amorphous As2S3 Films
Authors: Tanaka Keiji , Kawakami Nobuaki , Odajima Akira
Published: November 2005

Viscous and elastic changes in amorphous As2S3 films induced by bandgap illumination have been investigated by means of the surface acoustic waves propagating in As2S3/LiNbO3 structures. It is found that the changes in the elastic constants are +20% and -4∼-12% in the irreversible and reversible processes respectively. In the irreversible process, the elasticity changes monotonically but the viscosity changes non-monotonically.
Mega-Gauss Magnetic Field Generation by Means of Plasma Focus Compression
Authors: Koyama Kazuyoshi , Tanimoto Mitsumori , Matsumoto Yuji , Sugiura Masaru
Published: November 2005

The non-destructive production of compressed mega-gauss magnetic field in a plasma focus is experimentally investigated. Interferometric, magneto-optical and electrodynamical measurements show that the maximum field strength is about 1 MG in the converging plasma layer which has a pure magnetohydrodynamic shock structure.
Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior
Authors: Kishino Seigô , Matsushita Yoshiaki , Kanamori Masaru , Iizuka Takashi
Published: November 2005

The current understanding of thermally induced microdefects in Czochralski-grown silicon crystals is briefly reviewed and our investigations of the defects are described. The microdefects originate in oxygen precipitation occurring during thermal treatments after crystal growth. Both homogeneous and heterogeneous nucleation models have been proposed for the oxygen precipitation. The homogeneous nucleation model is contradicted because a low density of microdefects are induced in recent high-quality crystals even at high oxygen concentrations. A heterogeneous nucleation model is proposed, based on detailed investigations of the thermal behaviors of microdefects. It is demonstrated that the oxygen precipitation is governed by nucleation sites (carbon atoms) and the thermal history of wafers after crystal growth besides the oxygen concentration of the wafer.
Photoluminescence Processes of Zn-Doped In1-xGaxP with 0.6<x<1.0
Authors: Kato Takamasa , Matsumoto Takashi , Ishida Tetsuro
Published: November 2005

The photoluminescence from Zn-doped In1-x
Ga
x
P was studied at 77 K, and in the indirect bandgap region, a broad emission band at 2.16–2.18 eV was observed as the main band. This band is identified as a Zn acceptor and residual unknown donor pair band. In addition, emissions associated with a free exciton and its LA phonon replica have also been observed. In the direct bandgap region, an unknown donor level under the X conduction band minima also participates in the emission process in addition to band-to-band and band-to-Zn acceptor transitions in the range 0.70<x<0.72.
Analytical Expressions for Specific Heats and Isentropic Exponent of High Temperature Gases. I. Monatomic and Diatomic Gases
Authors: Matsuzaki Ri'ichi
Published: November 2005

Exact analytical expressions for the specific heats and the isentropic exponent are obtained for partially-ionized monatomic, pure diatomic, and heteronuclear diatomic gases. Since the specific heats and the isentropic exponent are analitically expressed in terms of concentration derivatives, the problem of the analytical expressions is reduced to the calculation of these derivatives. For a monatomic gas, four species (atom, monovalent and divalent ions, and electron) are taken into account. For a pure diatomic gas, five species (molecule, atom, molecular and atomic ions, and electron) are taken into account, and for a heteronuclear diatomic gas, seven species (molecule, two atoms, one molecular and two atomic ions, and electron) are included. The results of these expressions are in good agreement with published tables obtained by a numerical method over a wide range of temperature and pressure.
Carrier Density Fluctuations due to Distribution of Traps in Semiconductors
Authors: Sato Hisanao
Published: November 2005

A formula is given for the spectral density of the free electron number fluctuations caused by the distribution of traps in the band gap. The effect on the spectral density of various trap distributions are studied. It is found that large trap densities change not only the magnitude, but also the frequency dependence of the spectral density. The linear response of the carrier density to external excitations is briefly discussed to show the relation between the response and the fluctuation.
Kinetics of ESR Lines and Photocurrent in KTaO3Doped with Ni
Authors: Akishige Yukikuni , Yamamoto Yujiroh , Ohi Kikuo
Published: November 2005

An attempt is made to locate energy-levels associated with photochromic centers in the band gap of KTaO3doped with nickel. The thermally-stimulated current and the kinetics of ESR lines under illumination are measured over the temperature range from 90 K to 300 K. The results suggest the following energy-level assignments: the energy-levels of oxygen-vacancy (Vo) with one electron, Ni3+-Vowith two electrons and Ni3+-Vowith one electron are 0.13–0.18 eV, 0.39 eV and 0.49 eV from the conduction band, respectively. On the other hand, Fe3+acts as a deep acceptor. The kinetics of the photocurrent and ESR lines under coloring and bleaching are qualitatively explained by the three-center model proposed in this paper.
Optically-Gated InP-MISFET: A New High-Gain Optical Detector
Authors: Yamaguchi Eiichi , Kobayashi Takeshi
Published: November 2005

A new optical detector with an enhancement-mode MISFET structure is demonstrated. This device consists of a semi-transparent gate metal and a pyrolitic Al2O3 insulator film formed on an Fe-doped semi-insulating InP-crystal. A photocurrent-gain higher than 103 has been obtained under application of a gate bias. Moreover, a gate voltage lower than 2 V is high enough to give this large amplification. The amplification mechanism is explained by an increase in the surface-channel conductivity via the development of an electron quasi-Fermi level shift toward the conduction-band edge under the illumination.
Photoelectrochemical Properties of Iron-Oxide Films and the Coating Effects onto n-Si as an Efficient Photoanode
Authors: Ono Hiroshi , Morisaki Hiroshi , Yazawa Kazuhiko
Published: November 2005

The photoelectrochemical properties of iron-oxide thin films prepared by various techniques have been investigated extensively, and it was found that the quantum efficiency of the photoresponse is low for visible light. Iron-oxide films have been used in fabricating heterostructure electrodes composed of Si coated with iron-oxide. This iron-oxide/Si heterostructure has been characterized by X-ray diffraction, Auger electron spectroscopy and capacitance measurements, and Auger analysis has shown that the substances of the heterostructure interdiffuse deep across the interface. Some possible energy diagrams for the heterostructure are proposed.
Theoretical Estimation of Energy Resolution in Liquid Argon Sampling Calorimeter
Authors: Hoshi Yoshimoto , Masuda Kimiaki , Doke Tadayoshi
Published: November 2005

A new method for estimating the energy resolution of the multi-lead-plate liquid argon calorimeter (R
m≈t
c) and a new formula for the energy resolution of the multi-iron-plate liquid argon calorimeter (R
m≫t
c) are presented, where R
m is the average range of secondary electrons or positrons and t
c is the thickness of the unit cell. In the former case, the estimation is made by considering that the energy resolution is given by the sampling fluctuation of deposited energy in the liquid argon gap, assuming that the ionization losses in liquid argon gaps due to secondary particles have no correlation with each other. In the latter case, we cannot accept such an assumption, so a new formula for the energy resolution is derived from an analogy with Fano's formalism for the straggling of the total ionization produced by ionizing radiation with a fixed energy. A comparison with the results of Monte Carlo calculation and the experimental data shows that these can be used for estimating the energy resolution of the multi-plate liquid argon calorimeter with a wide liquid argon gap.
Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms
Authors: Shibata Kenji , Inoue Tomoyasu , Kashiwagi Masahiro
Published: November 2005

A TEM study on defects in pulse and cw laser-annealed Si layers is described. The type and distribution of defects at the beam periphery in pulse laser annealing depend on the pulse duration, whereas dislocation loops are distributed homogeneously in cw laser annealing. The periodic change in the defect density at the periphery was thoroughly investigated with five different laser beams, and it was concluded to be due to laser beam interference. A dislocation network is observed in the melted silicon layer in cw laser annealing at sufficiently high power. Dislocations interact with each other, and result in Cottrell sessile dislocations.
The properties of implanted As atoms were also examined by RBS and electrical measurements, and the results for pulse and cw laser annealing are compared.
Penetration Phosphors: Preparation and Cathodoluminescence Properties
Authors: Okamoto Fumio , Oka Takao , Kato Katsuhiro
Published: November 2005

Two types of phosphors have been prepared; (1) red-emitting (Zn, Cd)S: Ag phosphor layer deposited on non-luminescent SiO2 particles, and (2) green-emitting Zn2SiO4: Mn phosphor particles coated with undored ZnS or (Zn, Cd)S layer. Both layers are deposited on individual powder particles by chemical deposition using thioacetamide as the source of sulfide ions. Various factors affecting the deposition process as well as the effect of post-baking have been studied to establish the optimum preparative conditions and to obtain efficient phosphor layers.
The cathodoluminescence of the two-component phosphor screens prepared by mixing these two types of phosphors have been measured as a function of the accelerating voltage of the incident electron beam.
Diffusion Profiles of Cd in InP
Authors: Ohtsuka Ken-ichi , Nishino Taneo , Hamakawa Yoshihiro
Published: November 2005

We report the diffusion characteristics of Cd in InP in which the diffusion profiles have been investigated as a function of diffusion time and P pressure. For diffusion times shorter than 25 h, the diffusion profiles have two diffusion fronts, namely a steep diffusion front which leads to an abrupt p-n junction and a deep diffusion front giving a graded junction. However, for diffusion times longer than 36 h, the profiles become the error function complement. It has also been found that both the surface acceptor concentration and the diffusion coefficient decrease when excess P is added to the diffusion source. These diffusion characteristics are discussed in comparison with the results of photoluminescence and Hall-effect measurements.
Horizontal Zone-Melting of Indium Antimonide in Vacuum. II. Characterization by Galvanomagnetic Measurements at 77 K
Authors: Ohno Isao , Fujisawa Isao , Imamura Kaoru , Haruna Katsuji
Published: November 2005

Magnetoresistance and transverse magnetophonon resonance data at 77 K for n-type InSb crystals (prepared by the method described in Part I) are given, with the aim of detecting residual impurities and inhomogeneities. The importance of 1) using boat material not wetted by InSb and 2) low-temperature annealing (at 200°C for one week) are shown experimentally. The concentration of residual impurities is estimated to be 2×1014/cm3, and three kinds of impurity are found. Furthermore, dislocations and non-uniform distribution of the compensating acceptor impurities are identified as the source of inhomogeneities. It is concluded that the carrier concentration of less than 1014/cm3 is due to the compensation effect and that the reliable maximum mobility at 77 K is 8×105cm2/V·s.
Oscillation Based on Resonance of Space-Charge Wave in Multiple Transit Electron Beams –Oscillation Mechanism of Axially-Symmetrical Osaka Tubes–
Authors: Iida Yukio , Morita Masanobu
Published: November 2005

This paper describes the oscillation mechanism in Osaka tubes. The major oscillation generated by axially-symmetrical Osaka tubes is not affected by the external circuit. An electron performs the same motion as in a magnetron in a plane perpendicular to the axis, while performing harmonic motion in the direction of the axis. From the complex phenomena also related to the magnetron, those phenomena necessary for determining the geometry of the electron beam are selected. The study of these phenomena indicates that a closed electron beam is formed by a single excursion and return of an electron in the axial direction. A simple model using the Llewellyn-Peterson equations for a plane diode shows that the tube is capable of amplifying space charge waves. The oscillation frequency is determined by the resonance of the space charge waves.
Planar Dechannelling of Energetic Ions at Dislocations. I. Dependence of Dechannellling Cross-Section on Density of Dislocations
Authors: Kimura Kenji , Oshiyama Takashi , Mannami Michi-hiko
Published: November 2005

A convenient method for calculating the dechannelling cross-section of extended defects for channelled ions is demonstrated for the planar channelling of energetic He ions at dislocations. The method is applied to the dechannelling of planar-channelled ions at arrays of dislocations and it is shown that the dechannelling cross-section is no longer proportional to the square root of the ion energy when the mean separation of dislocations is comparable to the cross-section at an isolated dislocation.
Pressure-Induced Tricritical Behavior of the SmA-Cho Transition in COC
Authors: Shichijyo Shiro , Okamoto Toshiyuki , Takemura Tetuo
Published: November 2005

The tricritical nature of the smectic-A-cholesteric (SmA-Cho) transition in cholesteryl oleyl carbonate (COC) was investigated by several methods. Differential thermal analysis (DTA) and volume measurement showed the existence of a tricritical point at 3.1±0.1×103 kg/cm2 and 74°C, where the first-order transition converted to the second-order one. The dynamic properties were studied by ultrasonic measurement, and the differences in the transition processes were observed with a polarized microscope. Spherulites were observed in the smectic-A phase above the tricritical point. The structure of the spherulites and the morphology effects are discussed.
Dislocation Generation in the Initiation of Fractures in Silicon Crystals
Authors: Nishino Yoichi , Imura Toru
Published: November 2005

Notched silicon crystals were deformed in tension at elevated temperatures, and the incipient microplasticity associated with the notch was studied by in-situ X-ray topographic observation. Above a stress level of about 2 kg/mm2 at 700°C, a plastic zone was formed around the notch tip, accompanied by long-range elastic strain. Dislocations were generated on the slip planes parallel to the tensile axis by the operation of a bending moment induced around the notch tip mainly by the activity of two slip systems with the maximum Schmid factor, and the crack propagation is considered to break out as a result.
Dependence of Rocking Curve for Thin In1-xGaxAs1-yPy Layer on Thickness in a Symmetric Bragg Case
Authors: Komiya Satoshi , Nakajima Kazuo , Umebu Itsuo , Akita Kenzo
Published: November 2005

The dependence of the half-width of the rocking curve and the integrated intensity for the In1-x
Ga
x
As1-y
P
y
epitaxial layer on its thickness is measured in the parallel arrangement [+(400), -(400)] in a symmetric Bragg case using double-crystal diffractometry. The half-width increases abruptly with decreasing thickness in the region thinner than 0.5 µm, while the intensity increases linearly with increasing thickness in a wide region from 0.1–10 µm. This dependence is explained by the dynamical diffraction theory in which the quaternary epitaxial layer is treated as a non-absorbing, thin, perfect crystal.
Least Squares Locating Method Using Multi-Parallel Projections
Authors: Kondo Shin-ichi , Ohba Ryoji , Murata Kazumi
Published: November 2005

A least-squares method for locating a linear object by using its multiple parallel projections is proposed and a procedure is developed for obtaining the multi-segments approximation of a curved linear object. Then the procedure is applied to analytical photogrammetry for dislocations. The results of experiments performed on dislocations in an ice crystal show that the present method is useful for the accurate locating of curved objects.
Properties of Chemically Vapor-Deposited Amorphous SiNx Alloys
Authors: Sasaki Goro , Kondo Makoto , Fujita Shizuo , Sasaki Akio
Published: November 2005

Amorphous SIN
x
(x≦0.6) alloys were deposited by thermal decomposition of Ar/SiH4/NH3 mixtures at 550°C, and their optical and electrical properties were investigated. The optical gap energy increased quadratically from 1.5 eV to 2.0 eV with the incorporated nitrogen atom concentration. The nitrogen incorporation caused a remarkable reduction in the hopping conduction, whereas it had little effect on the extended-state conduction. The products of quantum efficiency, mobility, and lifetime were little influenced by the nitrogen incorporation.
Properties of Nb3Al Thin Films Sputter-Deposited on Sapphire Substrates
Authors: Tanabe Keiichi , Michikami Osamu
Published: November 2005

Metallurgical phases, lattice constants and superconducting T
c's have been investigated, for Nb3Al thin films prepared by magnetron sputtering on various sapphire substrates, including poly-crystal and single-crystals with different orientations. Homogeneous thin films with a single-phase A15 structure and T
c's higher than 16 K can be prepared on poly-crystal, single-crystal (1102) plane and (0001) plane. The differences in the kinds of substrates and even surface crystal orientations change the A15 phase boundary, as well as the film growth orientations. Films deposited on the (0001) plane have a single-phase A15 structure even at nearly stoichiometric composition. Films of less than 100 nm thickness show systematic T
c decreases and lattice constant increases. This result suggests the important role of the homoepitaxial growth mechanism in the formation of high-T
c metastable Nb3Al in the preparation method.
Magneto-Optical Properties of Magnetoplumbites BaFe12O19, SrFe12-xAlxO19 and PbFe12O19
Authors: Shono Keiji , Gomi Manabu , Abe Masanori
Published: November 2005

Faraday effect and absorption at λ≈0.6-1.6 µm, and Kerr effect and reflecstivity at λ≈0.4-1.0 µm are measured at room temperature on single crystals grown by the flux method. A heat treatment of the AFe12O19 (A=Ba, Sr, Pb) crystals in oxygen brings about improvement in transparency but no discernible change in Faraday rotation. Partial substitution of Fe with Al in SrFe12O19 causes marked decrease in the Faraday rotation, which surpasses improvement in the transparency, lowering the magneto-optical figure of merit. The reflectivity (5–25%) and the Kerr rotation (<8 minutes) are so small that the Faraday rotation has advantages over the Kerr rotation from the viewpoint of application. The figures of merit for BaFe12O19 and SrFe12O19 are 1.2–1.6 deg/dB at λ≈0.8-1.6 µm, which exceed that for YIG at 0.85<λ<1.0 µm.
Characteristics of Rod Anode Type He–Cd Laser Tubes
Authors: Kawase Hiromi
Published: November 2005

The discharge and lasing characteristics of hollow-cathode He–CdII laser tubes with rod anodes have been investigated in comparison with those of a normal hollow cathode tube with pin anodes. The advantages in employing the present design are found to be high sustaining voltage, uniformity of the plasma in the axial direction, and simplicity of theoretical analysis. However, the electron density and the 23S1 metastable He density are lower in the present type, resulting in a lower lasing efficiency even in a 4-rod tube, which shows the best lasing performance. The present results indicate the importance of the electron bunching process in the cathode bore in obtaining a dense plasma.
Self-Modulation of Light Output from Semiconductor Injection Lasers with Compound Cavities
Authors: Ogasawara Nagaatsu , Ito Ryoichi , Sasaki Toru , Osada Toshihito
Published: November 2005

The influence of coherent optical feedback on the oscillation properties of injection lasers under CW and pulsed excitation have been investigated. In particular, it has been demonstrated that the light output from pulsed injection lasers with external optical feedback exhibits self-modulation phenomena whose mechanism is identical to that of the undulating light-DC-current characteristics. Careful investigation of the self-modulated outputs and the undulating light-current curves has revealed some new features of the coherent optical feedback effect. The self-modulation phenomena have been applied to the measurement of the transient temperature rise of an injection laser.
Relation between Cr-Level and Main Electron Trap (EL2) in Boat-Grown Bulk GaAs
Authors: Hasegawa Fumio , Iwata Naotaka , Nannichi Yasuo
Published: November 2005

In order to characterize the Cr (Chromium)-level in bulk GaAs, a normal DLTS method was applied to boat-grown bulk GaAs which was Cr- and O (Oxygen)-doped but did not become semi-insulating. In the lightly-compensated region, no Cr signal was observed, probably because it is covered by the signal from the main electron trap EL2. In the moderately-compensated region, both signals of Cr and El2 were observed, but the trap concentration of EL2 was greatly reduced. In the heavily-compensated region, a large Cr-trap signal was observed, but no signal of EL2 could be observed even when the minority carrier injection was suppressed. Since Cr occupies a Ga site and forms deep acceptors, these results can be understood by considering that the Cr doping reduces the number of Ga vacancies and as a result the number of main electron traps EL2 which are produced by a Ga deficit is also reduced.
Linear Electro-Optic Effect of AgGaSe2
Authors: Horinaka Hiromichi , Sonomura Hajimu , Miyauchi Takeshi
Published: November 2005

Single crystals of AgGaSe2with sufficient transparency to measure the electro-optic effect have been prepared by the Bridgman technique. The linear electro-optic coefficients are measured by a phase modulated method which is devised to remove the inaccuracy induced by the existence of natural birefringence. The coefficients at constant stress, γ63and γ41are found to be 3.9×10-12and 4.5×10-12m/V respectively at a wavelength of 1.15 µm. The influence of optical activity on the observation of the electro-optic effect is also discussed.
Feedback Controller Synthesis for Tokamak Plasma Position Control
Authors: Yoshioka Ken , Abe Mitsushi , Kobayashi Tomofumi
Published: November 2005

A procedure for plasma controller synthesis using a system identification technique is proposed and is applied to position control in the HT-1 (Hitachi Tokamak) plasma. A linear dynamic model of the plasma position and the vertical field coil current is obtained from experimental data using the least-squares estimation method. The PI control gains are optimized on the basis of phase margin criterion using the frequency response of the model, and the plasma position can be regulated within a 5 mm deviation.
The response sensitivity and its time constant derived from the model agree with values derived theoretically from the circuit equation assuming that the change in the plasma minor radius for a given plasma displacement is subject to plasma limiter interaction.
Photovoltaic Properties of Thin Polymer (PVK-TNF) Films
Authors: Yamashita Ken , Suzuki Tatsuya , Hino Taro
Published: November 2005

The photovoltaic properties of thin films of the polyvinylcarbazole-trinitrofluorenone complex are investigated. Thin films of thickness between 10 and 500 nm were formed by the solution-casting method. The photovoltaic energy conversion efficiency was measured in Au-(polymer thin film)-Al cells as a function of the film thickness, and it became a maximum (about 0.01%) at a thickness of about 100 nm.
Optical Fiber Sensor for Measuring Refractive Index
Authors: Takeo Takashi , Hattori Hajime
Published: November 2005

An optical fiber sensor for measuring a liquid refractive index is proposed. When an optical fiber is bent and part of its cladding is stripped off, the light energy (E) emerging from the fiber depends on the refractive index of the surrounding medium (n
m). The change in n
m can be found from E. The light output energy and the measuring sensitivity are calculated numerically as a function of n
m for several values of the bending radius R. The fundamental characteristics of the sensor, made of a plastic fiber, are investigated using lamp oil and light oil as specimens, and a measurement accuracy of n
m to the third decimal place is easily obtained.
As applications of this sensor, measurement of liquid density and detection of oil are described.
Role of Ion Bombardment in Field Emission Current Instability
Authors: Todokoro Hideo , Saitou Norio , Yamamoto Shigehiko
Published: November 2005

The role of ion bombardment in field emission current instability is clarified experimentally by varying the emission current level and pressure over a wide range. It is found that bombarding ions sputter-off adsorbed gas molecules on the emitter surface and this causes field emission current fluctuation. This current fluctuation caused by ion bombardment is larger than that caused by gas molecule migration when the product of the pressure and the emission current is higher than 7×10-12 PaA. The relative fluctuations turn out to be the logarithm of the product of the pressure and the emission current. The ions are mainly generated close to the emitter due to electron collisions with residual gas.
Time-Resolved, Dispersed Laser-Induced Fluorescence of NO2: Observation of Collision-Induced Energy Transfer Effect
Authors: Sugimoto Nobuo , Takezawa Sanzo , Takeuchi Nobuo
Published: November 2005

The time-resolved fluorescence spectrum of NO2 excited at 463.0 nm was investigated using an Nd: YAG laser-pumped tunable dye laser, and the energy transfer effect was clearly observed in the decay curves of band and continuum fluorescences. The two rate constants, 5.3×107 Torr-1 sec-1 and 1.8×107 Torr-1 sec-1, and the quenching rate constant, 3.8×106 Torr-1 sec-1, were determined from the pressure-dependence of the lifetimes. This value of the fast rate constant is 2.5 times larger than previously reported ones. Also, the present measurement indicates the upper level excited at 463.0 nm has the 2B2 character, and the radiative lifetime, obtained from extrapolation to zero pressure, is 30 µsec.
Equilibrium Shape of Indium Particles
Authors: Yanagihara Takashi
Published: November 2005

In this study, indium particles were made by condensation of indium vapor on potassium chloride at 160°C in an ultra-high vacuum and annealed at 110°C for 100–600 sec. The particles and their replicas were then examined by transmission electron microscopy. The particles have a near-equilibrium shape with a flat area of (111) orientation surrounded by curved regions. This shape is compared with that predicted from theoretical calculations considering the surface energy based on the broken-bond model, and a qualitative agreement in shape is found with the (6, 14) Mie potential.
Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed Diodes
Authors: Murase Katsumi , Amemiya Yoshihito , Mizushima Yoshihiko
Published: November 2005

Properties of chemically vapor-deposited amorphous silicon-germanium-boron alloy are reported with special reference to its applicability to contact electrodes in silicon device technology. Contact properties of the amorphous alloy with p on n+ and n on n+ epitaxial single-crystalline silicon are investigated. The forward on-voltage and reverse recovery time of these diodes decrease drastically in comparison with those of corresponding conventional p-n and Schottky structures. On account of its dense localized states, the amorphous alloy can be regarded as a Schottky metal providing a low barrier height for holes. This enables the low-loss and high-speed operation of these diodes, the mechanism of which is discussed here. The effective work function of this amorphous alloy is also estimated.
Second-Order Vibration Spectra of Amorphous As–Se Systems
Authors: Onari Seinosuke , Kataura Hiromichi , Arai Toshihiro
Published: November 2005

The infrared absorption spectra of amorphous As
x
Se1-x
systems (0≤x≤0.5) were measured in the wave number range 300–600 cm-1 at room temperature, and one-mode type behaviours of the absorption bands were observed.
The absorption spectra have broad bands near 490 cm-1, and the spectral shape is well reproduced by the effective self-convolution of the phonon density of states. The absorption coefficient has a maximum value at the stoichiometric composition As2Se3, in good correspondence with that of the main band near 225 cm-1. Hetero-bondings and pyramidal units are predominant in these systems.
Abnormal Transverse-Field Effects in Nonideal Type 2 Superconductors. III. A Theory for an AC-Induced Decrease in the Semi-Quasistatic Magnetization Parallel to a DC Bias Field
Authors: Funaki Kazuo , Noda Minoru , Yamafuji Kaoru
Published: November 2005

It was suggested in our previous paper that the abnormal transverse-field effects observed in a superconducting wire in an AC magnetic field perpendicular to a transverse DC bias field originate from a kind of bending deformation of fluxoids. It was also shown that the steady behavior in magnetization could be explained quantitatively based on this mechanism with the aid of the usual critical-state model.
It this paper, a phenomenological theory for the asymmetric bending deformation of fluxoids is presented to describe the non-steady phenomena in the abnormal transverse-field effects. The observed variation of the magnetization is explained well by the present theory. The influence of the asymmetric bending deformation of fluxoids on the magnetic behavior of a wire in the presence of a transport current are also discussed.
Evaluation of Total Performance of Image Receptor by Redundancy
Authors: Inatsu Hiroshi , Uchida Suguru , Fujita Hiroshi
Published: November 2005

Redundancy, which is the complement of the relative entropy, is used to evaluate a radiological image containing object information. This approach is effective in evaluating the overall image quality. In this paper, the total performance of each image obtained from five image receptors is evaluated in a relative manner by using the redundancy calculated from the edge response function. It seems from the value of the redundancy that the total performance of the five image receptors falls in the order XTL, LT-RX, LT-QS, LH-RX, LH-QS.
Chemical Etching of Germanium with H3PO4–H2O2–H2O Solution
Authors: Kagawa Shuzo , Mikawa Takashi , Kaneda Takao
Published: November 2005

An H3PO4–H2O2–H2O solution is studied for possible use in the etching of germanium. The solution can be roughly classified into two ternary regions according to its etching characteristics: a (with a low H2O2 concentration) and b (with a high H2O2 concentration). Solutions in region b provide reproducible smooth and uniform surfaces. This solution can be used with SiO2 films and photoresists as a preferential etching mask material without dissolution or separation. It is suitable for processing germanium devices.