bluuebunny/crossref_metadata_2025 huggingface dataset:
Finding “Just-Right” Self-Esteem: Syncretic Self-Esteem Promotes Intrapersonal and Interpersonal Well-Being
Authors: Wang Yinan , Chang Edward C , Xu Jianjie , Liu Jia
Published: December 2020

This research focuses on healthy form of contingent self-esteem and its relevance in understanding human well-being in terms of both personal and relational existence. The form of self-esteem that relies on the integration between uniqueness and similarity was conceptualized as syncretic self-esteem (SSE). We propose that the moderate SSE, which removes the effects of self-esteem depending greatly on either uniqueness or similarity, facilitates both inner and relational harmony. Study 1 provides evidence of the validity and reliability of the three-factor Syncretic Self-Esteem Scale (SSES) (n = 2725). Study 2 reveals that moderate SSE relates to harmony within an individual (n = 632); using a longitudinal design, Study 3 finds that moderate SSE predicts a harmonious state between individuals and their surroundings through decreased self-ambivalence (n = 124). With finding out a form of moderate self-esteem, the present research contributes to promoting people’s global well-being in the perspective of self-esteem.
Socioeconomic status and response to a reading intervention: A quantile regression approach
Authors: Norris Cynthia Ulysse , Shero Jeffrey Samuel Angelo , Haughbrook Rasheda , Holden LaTasha R , van Dijk Wilhelmina , Al Otaiba Stephanie , Schatschneider Chris , Hart Sara Ann
Published: December 2020

In response to inadequate response to instruction in reading, interventions are often implemented to address deficiencies in component skills associated with reading performance. However, there are factors that influence how children respond to these interventions. Specifically, socioeconomic status (SES) is a well-known correlate of academic achievement, and we hypothesized that family-SES would be associated with response to reading intervention. We explored the estimated associations between SES (free and reduced lunch status) and the distribution of response to intervention (residualized gain scores on the decoding and expressive vocabulary subtests of the Woodcock-Johnson Tests of Achievement) using the quantile regression approach in a diverse sample of elementary students (N = 1,651). Results indicated that higher family-SES was more strongly associated with greater responsiveness to intervention for both the decoding and expressive vocabulary skills measured. We conclude with a call to more thoroughly consider predictors of individual differences in response to intervention.
“It’s an Americanization that’s not working”
Authors: Dyke Erin , El Sabbagh Jinan
Published: December 2020

In a 1-year ethnographic study at a predominantly Latinx-serving middle school, we explored tensions teachers experience in navigating the dominant hierarchical and punitive accountability regime, where teachers and students must satisfactorily attain achievement via hierarchically imposed measures, and teachers’ relationships with and sense of responsibility toward their students, families, and communities. We draw on scholarship from culturally sustaining pedagogy and transformative justice to articulate critiques and alternative orientations to the dominant accountability regime. Then, mobilizing second-wave critical whiteness studies as an analytic lens, we illuminate the ways in which STEM Urban Charter Academy teachers already variously experience, make sense of, and act on these divergent, in-tension accountability orientations. We suggest that teachers’ ambivalent tendencies are never static, but are dynamic and informed by the relationships of political, social, cultural, and human capital that create the broader landscape of the school. Finally, contributing to the emergent body of scholarship in culturally responsive school leadership, we suggest the critical necessity for leaders of Latinx- and immigrant-serving schools to minimize hierarchical, abstract accountability practices and to reframe and create the conditions for an accountability practice that centers the voices, experiences, knowledges, cultures, and languages of immigrant students, families, and communities.
Reskilling Teachers and Reclaiming Our Schools
Authors: Schoorman Dilys , Minor Iris
Published: December 2020

This paper describes the Educational Equity Partnership Project (EEPP), a multi-week five-module partnership in professional development (PD) involving approximately 50 teacher leaders in 32 Title 1 schools in the sixth largest school district in the United States. The EEPP was designed to support teacher leadership praxis in the quest for equity and social justice in public education. This study highlights the learning outcomes of the first three modules, focusing on culturally relevant pedagogy, multicultural curriculum development, and equity in schools. The analysis of participants’ survey data following each module revealed that critical consciousness emerged along four dimensions, with the key concepts serving as a lens for recognizing inequitable structures and critical self-reflection and enhancing participants’ sense of agency. The results underscore the need for educational professionals to commit to long-term, ongoing PD in critical multiculturalism, where critical consciousness and mindset shift are central to the professional capital developed.
Scanning Capacitance Microscopy Use in the Failure Analysis of Vcc Shorts in an Advanced Microprocessor
Authors: Scott Wills Kendall , Edwards Hal , Nuygen Long , Raghunathan Rohini , Todd Charles , Vance Andy
Published: December 2020

This article analyzes the cause of Vcc shorts in advanced microprocessors. In one instance, an advanced microprocessor exhibited Vcc shorts at wafer sort in a unique pattern. The poly silicon was narrow in one section of the die. The gates were shown to measure small, but no electrical proof of the short could be seen. To prove the short existed as a result of the narrow gate, a Scanning Capacitance Microscope (SCM) was utilized to confirm electrical models, which indicated a narrow poly silicon gate would result in Vcc shorts. High frequency dry etching and UV-ozone oxidation were employed for deprocessing. The use of the SCM confirmed the proof that the Vcc shorts were caused by narrow gate length which causes its leaky behavior. This conclusion could have only been confirmed by processing of material through the wafer foundry at the cost of money and time.
Embedded Memory Analysis for Standard Cell ASIC Yield Enhancement
Authors: Gloor Cary A.
Published: December 2020

The advances made in process technology along with system-on-a-chip capabilities have made failure analysis ever more difficult and expensive to perform. Quick product time-to-market and the required high fabrication yields demand top quality performance from the failure analysis team. In this paper we present a methodology for embedded memory analysis (EMA) which provides design, layout, and process characterization, and yield and reliability enhancement for standard cell ASIC products. The methodology takes the power of memory testing and failure signature analysis and brings it to the logic chip to accurately predict root cause defects. We also present the application tool that is used to query, bitmap, analyze, and report the data, along with numerous case histories. This process has greatly improved failure analysis hit rates and provided much quicker turn-times for process improvement feedback and customer return root cause analysis.
A Study on the Yield Loss Due to Al(Cu) Interconnections with Spacing Failure
Authors: Hwang Ruey Lian , Huang Yung-Sheng , Wang Ying-Lang , Lee Ming-Jer
Published: December 2020

This paper presents the results of a study on yield loss in wafers produced using a 0.25-μm CMOS process. It describes how the authors determined that a short in the M1 metal layer was the major yield killer and how they traced the cause to excess Cu that they believe migrated to the bottom of the Al(Cu)/TiN interface, forming θ-phase Al2Cu precipitates known to interfere with metal etching processes. It explains how TiN bridges, the result of incomplete etching, were observed between adjacent metal lines in failed die, confirming the authors’ theory and shedding light on potential solutions to the yield problem.
Near IR Absorption in Heavily Doped Silicon – An Empirical Approach
Authors: Falk R. Aaron
Published: December 2020

Backside failure analysis techniques rely heavily on transmission of near infrared (IR) radiation through the silicon substrate. This statement applies both to emission techniques and active laser probing. Heavy doping of substrates causes them to become highly absorptive in the near IR due to band gap shifts, which effects phonon-assisted absorption, and to free-carrier absorption. Substrate thinning is often required to allow adequate optical transmission. This paper describes an empirical approach to determining the absorption coefficient in a heavily doped substrate and use of the coefficient in determining the amount of substrate thinning required.
Backside Fault Isolation Using a Magnetic Field Imaging System on SRAMs with Indirect Shorts
Authors: Knauss L. A. , Frazier B. M. , Cawthorne A. B. , Budiarto E. , Crandall R. , Melnik S. , Bennett C.
Published: December 2020

With the arrival of flip-chip packaging, present tools and techniques are having increasing difficulty meeting failure-analysis needs. Recently a magneticfield imaging system has been used to localize shorts in buried layers of both packages and dies. Until now, these shorts have been powered directly through simple connections at the package. Power shorts are examples of direct shorts that can be powered through connections to Vdd and Vss at the package level. While power shorts are common types of failure, equally important are defects such as logic shorts, which cannot be powered through simple package connections. These defects must be indirectly activated by driving the part through a set of vectors. This makes the magnetic-field imaging process more complicated due to the large background currents present along with the defect current. Magnetic-field imaging is made possible through the use of a SQUID (Superconducting Quantum Interference Device), which is a very sensitive magnetic sensor that can image magnetic fields generated by magnetic materials or currents (such as those in an integrated circuit). The current-density distribution in the sample can then be calculated from the magnetic-field image revealing the locations of shorts and other current anomalies. Presented here is the application of a SQUID-based magnetic-field imaging system for isolation of indirect shorts. This system has been used to investigate shorts in two flip-chip-packaged SRAMs. Defect currents as small as 38 μA were imaged in a background of 1 A. The measurements were made using a lock-in thechnique and image subtraction. The magnetic-field image from one sample is compared with the results from a corresponding infrared-microscope image.
New Developments in IR Lock-In Thermography
Authors: Breitenstein O. , Rakotoniaina J.P. , Al Rifai M. Hejjo , Gradhand M. , Altmann F. , Riediger T.
Published: December 2020

Lock-in thermography based on an infrared camera has proven to be a useful tool for failure analysis of integrated circuits (ICs). This article discusses four novel technical developments of lock-in thermography. These developments are blackening the IC surface with colloidal bismuth, the synchronous undersampling technique allowing the use of higher lock-in frequencies, displaying the 0deg/-90deg signal as a novel high resolution emissivity corrected image type, and removing the thermal blurring effect by mathematically deconvoluting the 0deg/-90deg; signal. The effect of these techniques is demonstrated by using a regularly working operational amplifier (pA 741) and a damaged capacitor as test devices. It is shown that blackening the IC surface improves the detection sensitivity in metallized regions by up to a factor of 10, whereas the other methods allow improvement of the effective spatial resolution. The article also discusses which of the spatial resolution improvement techniques is most appropriate in different situations.
Advanced Fringe Analysis Techniques in Circuit Edit
Authors: Jain R.K. , Malik T. , Lundquist T.R. , Tsao C.-C. , Walecki W.J.
Published: December 2020

Novel Fabry Perot [1] fringe analysis techniques for monitoring the etching process with a coaxial photon-ion column [2] in the Credence OptiFIB are reported. Presently the primary application of these techniques in circuit edit is in trenching either from the front side or from the backside of a device. Optical fringes are observed in reflection geometry through the imaging system when the trench floor is thin and semi-transparent. The observed fringes result from optical interference in the etalon formed between the trench floor (Si in the case of backside trenching) and the circuitry layer beyond the trench floor. In-situ real-time thickness measurements and slope correction techniques are proposed that improve endpoint detection and control planarity of the trench floor. For successful through silicon edits, reliable endpoint detection and co-planarity of a local trench is important. Reliable endpoint detection prevents milling through bulk silicon and damaging active circuitry. Uneven trench floor thickness results in premature endpoint detection with sufficient thickness remaining in only part of the trench area. Good co-planarity of the trench floor also minimizes variability in the aspect ratios of the edit holes, hence increasing success rates in circuit edit.
Active Voltage Contrast for Failure Localization in Test Structures
Authors: Rosenkranz R. , Döring S. , Werner W. , Bartholomäus L. , Eckl S.
Published: December 2020

The common Passive Voltage Contrast (VC) localization method has its limits in the case of substrate contact chains. Because of leakage currents it is not possible to charge up the open part of the chain. In two case studies it is shown, how the Active Voltage Contrast (AVC) method in FIB and SEM can help to localize faults in such structures.
Deposition of Narrow, High Quality, Closely Spaced, but Isolated Conductors
Authors: Makarov V.V. , Jain R.K.
Published: December 2020

Developed procedures to deposit narrow (<100nm), closely spaced, low resistance conductors which exhibit good electrical isolation are demonstrated. The process parameters which limit how narrow a line can be deposited and the methods used to work-around these are discussed. For these depositions, 3pA ion beam current was used with a Mo(CO)6 precursor chemistry. The deposition method minimized the incorporation of non-conductive precursor by-products. To isolate adjacent conductors, a copper etch Credence FIB chemistry was used. The advantages of this procedure over the common practice when XeF2 chemistry is used is also discussed and demonstrated.
Study of a Systematic Low DPPM Reliability Defect without Common Electrical Signature
Authors: Zhang Fubin
Published: December 2020

Possible reliability failure mechanisms on mixed-signal IC are reviewed and categorized. Based on the nature of reliability and low DPPM failures on mixed signal IC, an analysis flow is proposed including identification of individual failure mechanisms, extraction of the systematic problems, and implementation of corrective actions. Finally, a case of successful isolation of a specific defect without common electrical signature on mixed-signal devices is presented.
A Case Study of Defects Due to Process-Design Interaction in Nano Scale Technology
Authors: Lin Hung-Sung , Hou Ying-Chin , Fu Juimei , Wu Mong-Sheng , Huang Vincent , Chou Ching-Heng , Lin Jian-Chang
Published: December 2020

The difficulties in identifying the precise defect location and real leakage path is increasing as the integrated circuit design and process have become more and more complicated in nano scale technology node. Most of the defects causing chip leakage are detectable with only one of the FA (Failure Analysis) tools such as LCD (Liquid Crystal Detection) or PEM (Photon Emission Microscope). However, due to marginality of process-design interaction some defects are often not detectable with only one FA tool [1][2]. This paper present an example of an abnormal power consumption process-design interaction related defect which could only be detected with more advanced FA tools.
Voiding in Cu Technology through Photovoltaic-Driven Electrochemical Dissolution
Authors: Baiocchi Frank A. , DeLucca John , Cargo James T.
Published: December 2020

It has been found that a process-design interaction involving very large capacitor arrays is capable of causing voiding in well-formed copper trenches. This voiding is believed to be caused by the electrochemical dissolution of copper driven by the photovoltaic effect realized at p-n junctions. A series of experiments was performed to reproduce this voiding in a laboratory environment using water and exposure to light or dark. The experiments were performed on two different size capacitor arrays. In addition, similar experiments were performed on a large capacitor array that uses the opposite dopant isolation scheme. Conversely, copper dendrite growth was observed at the features of interest instead of dissolution, even under flowing de-ionized water (DI) conditions. The results are discussed in the context of known copper-water electrochemical equilibria and design implications are discussed.
Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip Package
Authors: Cao Lihong , Venkata Manasa , Tay Meng Yeow , Qiu Wen , Alton J. , Taday P. , Igarashi M.
Published: December 2020

Electro-optical terahertz pulse reflectometry (EOTPR) was introduced last year to isolate faults in advanced IC packages. The EOTPR system provides 10μm accuracy that can be used to non-destructively localize a package-level failure. In this paper, an EOTPR system is used for non-destructive fault isolation and identification for both 2D and 2.5D with TSV structure of flip-chip packages. The experimental results demonstrate higher accuracy of the EOTPR system in determining the distance to defect compared to the traditional time-domain reflectometry (TDR) systems.
Building the Electrical Model of the Photoelectric Laser Stimulation of an NMOS Transistor in 90 nm Technology
Authors: Sarafianos A. , Llido R. , Gagliano O. , Serradeil V. , Lisart M. , Goubier V. , Dutertre J.M. , Tria A. , Pouget V. , Lewis D.
Published: December 2020

This paper presents the electrical model of an NMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures and from the results of physical simulation using Finite Element Modeling (TCAD). The latter is a useful tool in order to understand and correlate the effects seen by measurement by given a physical insight of carrier generation and transport in devices. This electrical model enables to simulate the effect of a continuous laser wave on an NMOS transistor by taking into account the laser’s parameters (i.e. spot size and power), spatial parameters (i.e. the spot location and the NMOS’ geometry) and the NMOS’ bias. It offers a significant gain of time for experiment processes and makes it possible to build 3D photocurrent cartographies generated by the laser on the NMOS, in order to predict its response independently of the laser beam location.
EOS (Electrical Overstress) – The Old, Unknown Phenomenon?
Authors: Jacob Peter
Published: December 2020

Frequently, Electrical Overstress (EOS) is understood in a similar context like Electrostatic Discharge (ESD). However, when looking deeper, only 3-5% of EOS failure signatures are caused by ESD. The dominant root causes can be found on system level – often inaccessible for the device failure analyst. However, switching procedures and sometimes-hidden inductance loads are the unconsidered and undiscovered problem makers. This paper reviews and highlights these failure mechanisms.
Advanced Laser Probe Techniques Applied to FA of RF Integrated Circuits - A Case Study
Authors: Kimball Mark , Nemirow Christopher
Published: December 2020

Failure analysis of RFIC’s can be a challenging problem, particularly as frequencies ascend into the medium to high GHz region. As frequency goes up, active probes become less and less accurate due to capacitive loading of circuit nodes, and capacitive coupling of stray signals into the probe from nearby circuit traces. We have found that Laser Voltage Imaging (LVi) offers an alternative measurement technique that can avoid these problems. But our work also showed that there are unusual failure signatures which appear as signal frequencies go up. A combination of LVI and RF-SDL was found to yield the best result.
Fluorosilicate Glass (FSG) Outgassing Induced Aluminum Bond Pad Corrosion during Post-Fab Wafer Storage
Authors: Younan Hua , Ramesh Rao Nistala , Shuting Chen
Published: December 2020

A case study of Fluorine (F)-outgassing is presented in this paper that caused the corrosion of Aluminum bond pad. It will be shown that the source of F-contamination is not the typical residue left behind after the passivation etch with Fluorine-based gas chemistry and the subsequent removal of the etch polymer generated with solvent (chemical) clean. Rather, it is introduced as a result of F-outgas over a period of time from the intermetallic dielectric (IMD) film, fluorosilicate glass (FSG), during the post-fab wafer storage. The methodology used in our failure analysis (FA) lab to identify and characterize this type of failure mode is presented in the paper.
Fault Localization Improvement through an Intra-Cell Diagnosis Approach
Authors: Sun Zhenzhou , Bosio Alberto , Dilillo Luigi , Girard Patrick , Todri Aida , Virazel Arnaud , Auvray Etienne
Published: December 2020

Logic diagnosis is the process of isolating the source of observed errors in a defective circuit, so that a physical failure analysis can be performed to determine the root cause of such errors. In this paper, we propose a new “Effect-Cause” based intra-cell diagnosis approach to improve the defect localization accuracy. The proposed approach is based on the Critical Path Tracing (CPT) here applied at transistor level. It leads to a precise localization of the root cause of observed errors. Experimental results show the efficiency of our approach.
Thermal Performance and Fabrication Improvements of Glass Interposer in 3D Packaging Systems
Authors: Faqir M. , Bouya M. , Bouissa Y. , Elamrani A. , Sbiaa Z. , Gandhi S. , Demir K. , Sundaram V. , Tummala R.
Published: December 2020

Our initial thermal study has provided preliminary results for glass and silicon interposers. Both glass and silicon have their advantages and disadvantages. The glass interposer provides good insulation but lower heat dissipation, while the silicon interposer has better heat dissipation. These results are extremely useful for the reliability of the 3D packaging systems. Concerning the glass interposer fabrication, we have used two laser drilling methods, the first one using Excimer laser and the second using the UV laser. The results obtained are both interesting and provide the required targets both in dimensions and form.
Failure Localization of an Electrical Transient Behavior on a Mixed-Mode IC by Using Static Emission Microscopy Technique
Authors: Sienkiewicz Magdalena , Huynh Estelle , Vidal Alain
Published: December 2020

This paper presents a case study on reliability reject on a Freescale mixed-mode IC. It focuses on a novel use of one of most frequently used failure localization techniques: static emission microscopy (EMMI) to localize a failure due to an electrical transient behavior. This work helped Freescale to identify a wafer fab process limitation and contributed to test improvement.
The Role of Free Carrier Absorption in LADA
Authors: Erington Kent , Bodoh Dan , Dickson Kris , Lange George
Published: December 2020

Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuit. In this paper, the characterization of continuous wave 1340nm laser induced currents and the LADA failure rate show that a two photon absorption explanation for the LADA effect is not plausible. The following sections confirm the results of a 28nm-node nMOS transistor using a 2.45NA solid immersion lens. The effects of global heating to that of local laser heating are then compared. The paper shows that the LADA response time to approximately 1300nm irradiation is << 100ns. It explains LADA at approximately 1300nm, free carrier absorption in the silicon and in the local silicide layers, and presents selected 1320nm LADA images on 28nm-node devices. Finally, it shows 1064nm LADA images on the same structure that indicate that 1064nm interaction with transistors is related to free carrier absorption, rather than electron-hole pair creation.
Evaluation of Power SiC-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy—Imaging of Carrier Distribution and Depletion Layer
Authors: Chinone N. , Cho Y. , Nakamura T.
Published: December 2020

Evaluation techniques for semiconductor devices are keys for device development with low cost and short time to market. Especially, dopant and depletion layer distribution in devices is a critical electrical property that needs to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHOSNDM) is one of the promising techniques for semiconductor device evaluation. We developed a method for imaging detailed dopant distribution and depletion layers in semiconductor devices using SHO-SNDM. As a demonstration, a cross-section of a SiC power semiconductor device was measured by this method and detailed dopant distribution and depletion layer distributions were imaged.
Laser Voltage Tracing—A Novel Approach for Imaging Pulsed Signals
Authors: Nemirow Christopher , Leslie Neel
Published: December 2020

LVx, a workhorse in many failure analysis laboratories, consists of laser voltage imaging (LVI) and laser voltage probing. Laser voltage tracing (LVT) eliminates the inherent restrictions bestowed by LVI and reduces the need for costly probing. It monitors a distinct feature of the test pattern and creates a corresponding signal map. This weapon in the LVx arsenal significantly decreases debug time and will prove as invaluable as LVI. Beginning with an overview of the limitations of traditional LVx, this paper provides information on the process steps, experimental setup, and applications of LVT. LVT introduces a new approach to monitoring LVx signals. The most obvious LVT application is debugging problematic peripheral NAND circuitry.
Sample Preparation Challenges in Removing Copper Pillar WLCSP Device Embedded in PCB Module for Electrical Testing and Failure Analysis
Authors: Cheong Kah Chin
Published: December 2020

Copper pillar WLCSP device embedded in large PCB module with passive devices to create one hybrid package are growing widely in smart communication and mobile electronic devices. The crucial challenges in electrical testing and failure analysis on it are to remove the embedded copper pillar CSP device from the module without inducing mechanical defects, and solder ball placement on the CSP for ATE testing. This paper discusses the sample preparation process step-by-step, which includes de-soldering of external components from the PCB, top side up and down parallel polishing to remove copper pillars, chemical etching the PCB module, solder ball placement on CSP devices and the soldering process on a plain coupon board. The established process enables electrical testing, evaluations and failure analysis performed on a demounted CSP device. A simulation of an electrical testing and failure analysis will also be highlighted in this paper.
Towards Perfection in Large Area, High-Resolution SEM for Integrated Circuit Reverse Engineering
Authors: Fridmann J.R. , Sanabia J.E. , Rasche M.
Published: December 2020

For large area, high resolution SEM imaging applications, such as integrated circuit (IC) reverse engineering and connectomics [1-3], SEM instruments are limited by small, uncalibrated fields of view (FOVs) and imprecise sample positioning. These limitations affect image capture throughput, requiring more stage drive time and larger image overlaps. Furthermore, these instrument limitations introduce stitching errors in 4 dimensions of the image data, X, Y, Z and I (signal intensity). Throughput and stitching errors are cited challenges [2] and software alone cannot tenably correct stitching errors in large image datasets [3]. Furthermore, software corrections can introduce additional errors into the image data via the scaling, rotation, and twisting of the images. So software has proven insufficient for reverse engineering of modern integrated circuits. Our methodology addresses the challenges brought on by small, uncalibrated FOVs and imprecise sample positioning by combining the resolution and flexibility of the SEM instrument with the accuracy (of the order 10 nm), stability, and automation of the electron beam lithography (EBL) instrument. With its unique combination of high resolution SEM imaging (up to 50,000 pixels x 50,000 pixels for each image), laser interferometer stage positioning, and FOV mapping, the reverse engineering scanning electron microscope (RE-SEM) produces the most accurate large area, high resolution images directly acquired by an SEM instrument [4]. Since the absolute position of each pixel is known ultimately to the accuracy afforded by the laser interferometer stage, these images can be stacked (3D-stitched) with the highest possible accuracy. Thus, the RE-SEM has been used to successfully reconstruct a current PC-CPU at the 22 nm node.
Electro-Optical Frequency Mapping Phase Image Simulation Technique for Failure Analysis
Authors: Nonaka Junpei , Matsui Nakaba , Honbu Seiichi , Shigeta Kazuki , Funatsu Yukihisa
Published: December 2020

We propose a phase image simulation method for Electro-Optical Frequency Mapping (EOFM). The proposed method eases the matching of phase images and circuit layout data, which was previously difficult because phase images are very complex. Physical failure analysis based on this matching result is enabled. Further works are required for understandings of simulated phase images in compound logic cells having many states or high-Z states.
Power Device Burned Completely—And Now, How to Find the Root Cause?
Authors: Jacob Peter
Published: December 2020

If power modules suffer failures, frequently the destruction energy is so high that the component (and also neighbored circuitry) burns down completely. For failure analysis, just some pieces of carbonized leftovers and molten metal balls are available. Of course, no useful analysis on component level is possible in such cases. However, a combination of system-related failure anamnesis and dedicated measurements on new reference systems and surviving parts of the failed system, allows many useful conclusions towards the failure root cause. This paper highlights the most important approaches and questions to be evaluated in such cases.
Yield and Failure Analysis of 14nm On-Chip MIMCAP
Authors: Beaudoin Felix , Chen Wei-Hang , Babighian Pietro , Wei Yuting , de la Garza Ernesto Gene , Sreenivasan Nimisha C. , Cheng Lili
Published: December 2020

A BEOL compatible Metal-Insulator-Metal capacitor (MIMCAP) was successfully developed for GlobalFoundries 14nm technology node, and subsequently introduced on customer designs as decoupling capacitors. The lead production silicon wafers with MIMCAP showed good functionality at wafer SORT functional test. However, upon testing more wafers, it became evident that the wafer center was impacted by abnormal scan logic fallout. The observed yield loss did not correlate with the MIMCAP scribe line Health Of Line (HOL) structures and the failure root cause could not be directly pin pointed to the MIMCAP process integration. Product scan diagnostic was performed and several systematic failing logical nets were identified. Subsequent failure analysis showed open via contacts in the MIMCAP vicinity. A detailed layout analysis of the FA confirmed weak-points and repeating logic nets allowed identifying a chip design topography issue resulting in a narrower process window compared to the scribe line MIMCAP HOL structure. Thanks to this knowledge the MIMCAP process was further optimized and the wafer center fallout was fully recovered in volume production.
Conductive-AFM for Inline Voltage Contrast Defect Characterization at Advanced Technology Nodes
Authors: Zhang Chuan , Nxumalo Jochonia , Chen Esther P.Y.
Published: December 2020

Voltage contrast (VC) mode inline E-beam inspection (EBI) at post contact layer provides electrical readout of critical yield signals at an early stage, which could be months before a wafer reaches functional test. Similar to the passive voltage contrast (PVC) technique that is widely used in failure analysis labs, inline VC scanning is based on scanning electron microscopy, where a low keV electron beam scans across the wafer. Conductive atomic force microscopy (CAFM) was successfully implemented as a characterization method for inline VC defects. In this paper, three challenging VC defect analysis case studies are considered: bright voltage contrast (BVC) gate to active short, BVC Junction leakage, and Dark Voltage Contrast gate contact open. Defects exhibiting a hard electrical short, junctional leakage, and open gate contact are used to illustrate how CAFM provides a powerful and comprehensive solution for in-depth characterization of the inline VC defects.
Localizing IC Defect Using Nanoprobing: A 3D Approach
Authors: Li Jane Y. , Zhang Chuan , Aguada John , Nemirow Christopher , Marks Howard
Published: December 2020

This paper demonstrates a methodology for chip level defect localization that allows complex logic nets to be approached from multiple perspectives during failure analysis of modern flip-chip CMOS IC devices. By combining chip backside deprocessing with site-specific plasma Focused Ion Beam (pFIB) low angle milling, the area of interest in a failure IC device is made accessible from any direction for nanoprobing and Electron Beam Absorbed Current (EBAC) analysis. This methodology allows subtle defects to be more accurately localized and analyzed for thorough root-cause understanding.
Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy
Authors: Hirota Jun , Hoshino Ken , Nakai Tsukasa , Yamasue Kohei , Cho Yasuo
Published: December 2020

In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.
Formation of indicators of normative monetary valuation of industrial lands under influence of location factor
Authors:   Kharkiv National Agrarian University named after V.V. Dokuchaiev, Iukhno A. , Pohoyda V. ,   Kharkiv National Agrarian University named after V.V. Dokuchaiev
Published: December 2020

Industrial lands occupy minor area in the structure of the land fund of Ukraine (less than 1%), but perform a very important function - act as a basis for the placement of the production means. The normative monetary valuation of industrial lands is carried out in accordance with the Methodology of normative monetary valuation of non-agricultural lands (except for settlements) [1] and the Procedure for normative monetary valuation of non-agricultural lands (except for settlements) [2] and takes into account the metric characteristics of the land plots: (its area), rental income per unit area of the relevant category of land, capitalization period, coefficients that take into account the location, type of use and coefficient that takes into account the land belonging to the lands of environmental, health, recreational, historical and cultural purposes. The article examines the impact of the coefficients that take into account the regional and local location of the land plot on the indicators of the normative monetary valuation of the industrial lands. The calculations on the normative monetary valuation of the industrial land plots located on the territory of one cadastral quarter have been made. It has been established that the indicators of the normative monetary valuation of the industrial land plots located on the territory of the given cadastral quarter are influenced only by the area of the land plot. The valuation indicators do not take into account the local features of the location of a specific land plot. This has advantages in terms of automation of the valuation process of the objects and allows avoiding the subjective interpretation of the manifestation of the local factors on a particular land by the valuator, but makes it impossible to take into account the peculiarities of each specific land plot.
EVALUATION OF CLEAN WATER SUPPLY SYSTEMS OF DARUL HIKMAH MOSQUE IN POLITEKNIK NEGERI SEMARANG
Authors: Santosa Stefanus , Suhartono Edy , Fahdiyat Lukman , Pertiwi Zulaikha Putri
Published: December 2020

Darul Hikmah Mosque is a building located inside Politeknik Negeri Semarang as a place of worship for all campus residents, and people who live around the area. The prayer activity is preceded by the Wudu. In order for Wudu to be carried out perfectly, sufficient quantities of water are needed. The lack of pressure and discharge of Wudu tap water, when used simultaneously, becomes a constraint that is the water pressure decreases. The purpose of this study is to determine the factors causing the lack of water discharge or pressure as required in SNI 03-7065-2005. The research method is quantitative descriptive by evaluating the performance of the existing water supply system and using a discrepancy model by comparing the evaluation results with existing data to find discrepancies. Evaluation results indicate that the factors that cause the lack of water pressure are the roof tank height is less than ideal for water distribution with gravitational power, and the volume of available water is not sufficient
Retos a los que se enfrenta la fiscalidad de las multinacionales: las propuestas de la OCDE
Authors: López Laborda Julio , Onrubia Fernández Jorge
Published: December 2020

La globalización y la digitalización están poniendo de manifiesto las grietas de laarquitectura vigente de la fiscalidad internacional. La cada vez menos necesaria presenciafísica de las empresas en los territorios ha impulsado la planificación fiscal agresiva. Esteartículo describe y valora las reformas del Marco Inclusivo BEPS de la OCDE (Pilares1 y 2). Se presentan los resultados de algunas investigaciones sobre sus efectos en larecaudación, la inversión y la transferencia de beneficios y se ofrecen algunas reflexionessobre el futuro de BEPS.
Authors: Hepilita Yohana , Mariati Lusia Henny
Published: December 2020

Introduction: Smoking is a risk factor that can increase blood pressure. Clinically, arterial blood pressure is described as systolic pressure per diastolic pressure, with normal values ​​for blood pressure ≥120 / 80 mmH. Screening for cardiovascular risk factors is recommended starting at age 20 years. The purpose of this study was to provide an overview of the risk of cardiovascular health (blood pressure) and smoking behavior in the younger age group and to determine the relationship between smoking behavior and blood pressure. Methodology: This research is an observational study with descriptive research type. The sample technique used is non-probability sampling using judgmental sampling or purposive sampling. The number of respondents in this study were 123 students. The data analysis used in this study was univariate analysis, namely the calculation of the frequency and presentation of blood pressure variables, smoking behavior (age of the smoker, duration of smoking and number of cigarettes consumed per day and the Brinkman index). The bivariate data analysis used in this study was the Lambda test to determine the correlation test for smoking behavior and blood pressure variables. Results: The results of this study showed that from 123 respondents, the majority of respondents were classified as light smokers with a total of 109 students (88.6%). respondents and the majority of respondents who had pre-hypertensive blood pressure were 105 students (85.4%). The results of the correlation test with the Lambda test found that there was no relationship between smoking behavior (Brinkman index) and blood pressure, with a value of λ = 0.000. Discussion: Based on this study, it was concluded that the majority of young smokers were light smokers and the majority had pre-hypertensive blood pressure levels. The results of this study also concluded that there was no relationship between smoking behavior and blood pressure levels. Suggestions for further research are to conduct research using a larger number of respondents and the need for intervention in the study and using a control group

 Keywords: Smokers, Young Age, Blood Pressure
Kualitas Mikrobiologis Se’i Sapi yang di Curing Menggunakan Ekstrak Kulit Buah Naga Merah (Hylocereus polyrhizus)
Authors: Missa Kristoforus Trifonius , Nahak T.B. Oktovianus R. , Kia Kristoforus W.
Published: December 2020

Tujuan dari penelitian ini adalah untuk menganalisis aktivitas antibakteri ekstrak kulit buah naga merah terhadap Escherichia coli dan aplikasi sebagai preserfatif se’i daging sapi. Data diolah dengan analisis sidik ragam (ANOVA) dan dilanjutkan dengan uji Duncan. Berdasarkan uji antagonistik menggunakan metode difusi sumuran, ekstrak kulit buah naga merah menunjukkan kemampuan dalam menghambat bahkan membunuh E. coli. Pengujian mikrobiologis se’i daging sapi menunjukkan bahwa penggunaan ekstrak kulit buah naga merah mampu menghambat pertumbuhan bakteri patogen. Penghambatan ini disebabkan oleh adanya senyawa aktif yang berperan sebagai senyawa antibakteri di dalam kulit buah naga merah sehingga menekan laju pertumbuhan bakteri patogen. Kualitas mikrobiologis sei sapi dengan penambahan pengawet (nitrat) masih sesuai dengan BSNI akan tetapi jumlah bakteri pada penambahan bahan pengawet lebih banyak jika dibandingkan pada se’i sapi dengan penambahan konsentrasi ekstrak kulit buah naga merah yang jumlahnya lebih sedikit dan masih sesuai dengan BSNI. Pengamatan keberadaan bakteri E. coli pada se’i daging sapi baik pada kontrol maupun pada perlakuan menggunakan pengawet dan konsentrasi ekstrak kulit buah naga merah menunjukkan bahwa tidak adanya (negatif) pertumbuhan bakteri E coli. Penghambatan keberadaan bakteri E. coli ini disebabkan oleh adanya kandungan ekstrak kulit buah naga merah dan kandungan asap yang bersifat bakterisidal sehingga mampu menghambat pertumbuahan dari bakteri E. coli. Disimpulkan bahwa semakin tinggi konsentrasi ekstrak kulit buah naga merah (Hylocereus polyrhizus) akan semakin baik dalam proses penghambatan terhadap pertumbuhan bakteri Escherichia coli serta berpotensi sebagai bahan pengawet alami yang dapat ditambahkan dalam produk se’i. Penggunaan ekstrak kulit buah naga sebesar 60% dalam produk pembuatan se’i sebagai agen curing juga dapat menekan laju pertumbuhan bakteri. Penggunaan ekstrak kulit buah naga merah sebesar 60% dalam pengujian ini juga lebih baik jika dibandingkan dengan kontrol (-), kontrol (+) dan konsentrasi 50%.
Estratégias experimentais utilizando materiais de baixo custo para a solução do Problema da Coroa do Rei Hieron II
Authors: Nogueira Neto Joaquim Augusto , De Castro Robson Costa
Published: December 2020

Atualmente, em muitas aulas de Física, apresentamos aos alunos as descobertas de muitos “gênios” históricos que contribuiram para as ciências naturais. Contudo, às vezes, pela falta de tempo decorrente do excesso de conteúdos a serem cumpridos, deixamos de discutir como essas descobertas foram relevantes para a sua respectiva época. Um dos intrigantes problemas configurados pela ciência foi a lenda sobre Arquimedes e a coroa do rei Hieron II de Siracusa. Assim, a proposta deste estudo foi apresentar a solução do problema da coroa de Hieron desenvolvendo estratégias experimentais utilizando materiais de baixo custo. Nesses experimentos foram usados dois métodos para a obtenção das massas de ouro e prata, representadas nessa pesquisa por arruelas zincadas e de borracha respectivamente. A partir dos resultados encontrados, foi possível observar que os valores das massas obtidos nos dois métodos estão em concordância. Assim, acreditamos que, ao contextualizar “problemas históricos” com conteúdos discutidos em sala de aula, será despertado o interesse dos alunos pelas ciências facilitando o processo de ensino-aprendizagem em Física.
PLANEJAMENTO PARTICIPATIVO EM TURMAS DE ACELERAÇÃO DE TERCEIRO CICLO DO ENSINO FUNDAMENTAL
Authors: Baptista Glória Lontra
Published: December 2020

As formas tradicionais de organização do processo ensino aprendizagem não contemplam as dificuldades e desafios das turmas de aceleração. No presente trabalho apresento reflexões sobre as possibilidades de trabalhar com o planejamento participativo nas aulas de Educação Física em turmas de aceleração de terceiro ciclo do ensino fundamental em uma escola da rede municipal de educação de Niterói. Desse modo, inicio apresentando aspectos legais em torno das classes de aceleração, o diálogo com o planejamento participativo e o ensino de educação física e sequencio com os modos de organização da produção dos dados da pesquisa, caracterizando os sujeitos e os espaços e tempos das aulas de modo a pensar alternativas que estabeleçam uma ligação entre a experiência docente e a literatura da área, demonstrando que buscar novas iniciativas pedagógicas, para ressignificar o papel da escola e atingir este público é uma tarefa urgente.
NÓS QUEREMOS SER OUVIDOS: “ensino remoto” não é educação!
Authors: Medina Bruna , Pereira Jonathan Barra
Published: December 2020

A atual pandemia demandou medidas apressadas para dar continuidade ao ano letivo. Assim, buscamos refletir e relatar a implementação do ensino remoto emergencial, em uma escola estadual mineira e uma escola municipal de Maricá/RJ. Nas experiências relatadas, mais houve aproximações que distanciamentos e as queixas principais foram: pouco apoio governamental, sobrecarga de trabalho e dificuldade em atingir os alunos por meio virtual. Acerca da educação física, o ensino remoto emergencial tornou sua precarização ainda mais evidente, seja por parte das secretarias de educação que a trataram diferente de outras disciplinas, seja pela escola que a compreende como um momento de lazer. Os problemas enfrentados na implementação do ensino remoto emergencial não são atuais, mas sim históricos e estruturais. Não temos respostas sobre como deveríamos ter agido nessa situação, mas acreditamos que o que vem sendo realizado não favorece nem os alunos, nem os professores.