bluuebunny/crossref_metadata_2025 huggingface dataset:
A Novel Roseosiphophage Isolated from the Oligotrophic South China Sea
Authors: Yang Yunlan , Cai Lanlan , Ma Ruijie , Xu Yongle , Tong Yigang , Huang Yong , Jiao Nianzhi , Zhang Rui
Published: May 2017

The Roseobacter clade is abundant and widespread in marine environments and plays an important role in oceanic biogeochemical cycling. In this present study, a lytic siphophage (labeled vB_DshS-R5C) infecting the strain type of Dinoroseobacter shibae named DFL12T, which is part of the Roseobacter clade, was isolated from the oligotrophic South China Sea. Phage R5C showed a narrow host range, short latent period and low burst size. The genome length of phage R5C was 77, 874 bp with a G+C content of 61.5%. Genomic comparisons detected no genome matches in the GenBank database and phylogenetic analysis based on DNA polymerase I revealed phylogenetic features that were distinct to other phages, suggesting the novelty of R5C. Several auxiliary metabolic genes (e.g., phoH gene, heat shock protein and queuosine biosynthesis genes) were identified in the R5C genome that may be beneficial to the host and/or offer a competitive advantage for the phage. Among siphophages infecting the Roseobacter clade (roseosiphophages), four gene transfer agent-like genes were commonly located with close proximity to structural genes, suggesting that their function may be related to the tail of siphoviruses. The isolation and characterization of R5C demonstrated the high genomic and physiological diversity of roseophages as well as improved our understanding of host–phage interactions and the ecology of the marine Roseobacter.
Summer Season Water Temperature Modeling under the Climate Change: Case Study for Fourchue River, Quebec, Canada
Authors: Kwak Jaewon , St-Hilaire André , Chebana Fateh , Kim Gilho
Published: May 2017

It is accepted that human-induced climate change is unavoidable and it will have effects on physical, chemical, and biological properties of aquatic habitats. This will be especially important for cold water fishes such as trout. The objective of this study is to simulate water temperature for future periods under the climate change situations. Future water temperature in the Fourchue River (St-Alexandre-de-Kamouraska, QC, Canada) were simulated by the CEQUEAU hydrological and water temperature model, using meteorological inputs from the Coupled Model Intercomparison Project Phase 5 (CMIP5) Global Circulation Models (GCMs) with Representative Concentration Pathway (RCP) 2.6, 4.5 and 8.5 climate change scenarios. The result of the study indicated that water temperature in June will increase 0.2–0.7 °C and that in September, median water temperature could decrease by 0.2–1.1 °C. The rise in summer water temperature may be favorable to brook trout (Salvelinus fontinalis) growth, but several days over the Upper Incipient Lethal Temperature (UILT) are also likely to occur. Therefore, flow regulation procedures, including cold water releases from the Morin dam may have to be considered for the Fourchue River.
Nezahualcoyotl : quatrième "ville" du Mexique ou "colonia proletaria" de Mexico
Authors: Ferras Robert
Published: May 2017

Nezahualcoyotl, quatrième ville du Mexique ou colonia proletaria de Mexico. Nezahualcoyotl, dans la «ceinture de misère» de Mexico, est un exemple d' habitat sous-intégré et la synthèse de tous les problèmes posés par l'éclatement de la ville. Ce quartier a aujourd'hui plus d'un million d'habitants, contre 60.000 en 1960. Au laisser-faire intégral des années soixante a succédé un effort d'organisation pourtant bien insuffisant. Cependant l'évolution de ce quartier ne se pose pas seulement en termes d'éloignement (mauvaises liaisons avec le centre de Mexico), de sous-équipement (égouts, téléphone, écoles, commerces) mais aussi en termes de marginalité et d'exclusion du mode de vie urbain. Cette situation est due à l'action convergence de lotisseurs illégaux, de promoteurs véreux, de fonctionnaires obligeants et d'hommes politiques peu scrupuleux.
Dégradation dans les régions centrales de la République du Niger
Authors: Mainguet Monique , Canon Cossus Lydie , Chemin Marie-Christine
Published: May 2017

Dans l'erg Hausa, au centre du Niger, la céréaliculture du mil et du sorgho coïncide avec le sable façonné en un modelé de monticules. Malgré la dégradation poussée du terroir, rien n'autorise à conclure à une dépendance directe entre la densité d'occupation des sols et la désertification. Si la texture des sables et la faible pente des versants constituent des éléments favorables, la faiblesse des pluies, la médiocrité du tapis végétal, la granularité qui facilite la déflation éolienne, sont autant d'inconvénients.
La Champagne et les champs : nouveaux espaces pour l'analyse régionale
Authors: Brunet Roger
Published: May 2017

La notion de champ devrait être prise en compte par l'analyse régionale : les systèmes locaux ou régionaux sont le produit de l'interférence d'un certain nombre de champs, sous certaines conditions. Par là s' introduit une réinterprétation moderne et étendue des concepts d'environnement et de position. Les champs sont à la fois milieu, médiateur et moyen de l'analyse régionale, et de la solution des contradictions entre le général et le particulier en géographie. Définitions et démonstrations s' appuient sur le cas de la Champagne (France) .
Les villes dans l'espace social
Authors: Provendier Fabienne , Pumain Denise , Saint-Julien Thérèse
Published: May 2017

L'étude des profils sociaux des villes révèle des inégalités marquées entre les villes. Ces inégalités sont dues aux spécialisations fonctionnelles héritées de la première révolution industrielle, aux divisions récentes du travail selon la qualification des emplois. Elles dépendent aussi de la place des villes dans la hiérarchie urbaine. L'aménagement doit tenir compte de ces données.
Vallée d'Aspe en survie ou les limites d'une politique en faveur de l'agriculture de montagne dans les Pyrénées françaises
Authors: Dalla Rosa Gilbert
Published: May 2017

La vallée d'Aspe est une périphérie typique : solde migratoire fortement négatif, commercialisation de ses produits par des intermédiaires étrangers à la région, utilisation à l'extérieur de ses ressources hydro-électriques, pression urbaine sur le foncier. A part une minorité d'exploitants agricoles qui ont joué la carte de la modernisation au prix d'un dangereux endettement, l'ensemble de la vallée est en survie. Les aides accordées par l'Etat sont souvent considérées par les bénéficiaires comme des aumônes qui n'apportent qu'une solution provisoire à un déclin apparemment inexorable. Ce déclin semble confirmé par la progression de l'individualisme et de la non-communication, ce qui contribue à déstructurer la société locale.
Mouvements de terrain et érosion hydrique dans les Baronnies méridionales : méthodes d'étude et premiers résultats
Authors: Dumas Bernard , Guérémy Pierre , Lecompte Michel , Lhénaff René , Raffy Jeannine
Published: May 2017

Situated in the middle part of the Baronnies (Southern Prealps) the study area consents to a detailed mapping (1/10.000) of the effects of mass movements and water erosion. The following research of the factors of instability is turned chiefly to the vegetative cover and the geomor-phological environment (several generation of glacis and rectilinear slopes). It involves also the setting of some équipements (a climatic station, several lines of stakes and of painted stones) in order to specify the nature and the degree of activity of the processes at work, as a preliminary to the drawing of the zonation map of such hazards ; the first results of the experimentation of erosion and transport processes by overland flow on slopes of marly limestones are stated.
L'urbanisation en Algérie: idées reçues et réalités
Authors: Côte Marc
Published: May 2017

Altough its very ancient roots, urbanization in Algeria is very recent when considering its extent. Five generally accepted ideas on Algerian urbanization are analysed here. It is thus proved that the fondations of these ideas are not always exact and must be qualified.

However, if the growth of urbanization is a phenomenon common to all three countries of the Maghreb, its specific characteries in Algeria are shown by the more unbalanced situation of the towns, more traumatizing than for her Maghreb neighbours. In this way, a favourable ground has been created for the rise of the Islamic movement. It seems that the explanation of this situation lies in the way this urbanization has been carried out.
Les manuels scolaires de géographie en Belgique francophone
Authors: Mérenne-Schoumaker Bernadette
Published: May 2017

L'article tente de dresser un bilan de l'évolution du statut et du contenu des manuels scolaires de géographie en Belgique francophone. À cette fin, il analyse successivement trois périodes : avant la rénovation de l'enseignement, les années 1980-1990 et celle d'aujourd'hui. A travers les changements, tout confirme les liens étroits entre la finalité de l'enseignement et le rôle dévolu aux manuels.
Land Arts. Les fabriques spatiales de l'art contemporain
Authors: Volvey Anne
Published: May 2017

Témoignage du renforcement et du renouvellement d'une pluridisciplinarité autour de l'art contemporain, Spatialités de l'art ouvre plusieurs pistes pour penser la spatialité de l'œuvre d'art contemporaine. Ce collectif de textes opère une série de décentrements par rapport aux référents plus habituels de cette pluridisciplinarité : les auteur(e)s choisissent leurs exemples dans la danse et les installations plutôt que dans la littérature et la peinture ; ils s'intéressent aux pratiques artistiques, tout particulièrement au travail de terrain et à la cartographie, plus qu'aux objets d'art qu'ils placent dans la perspective de la pratique ; ce faisant, ils examinent de nouveaux objets, la carte, et réexaminent de manière critique les anciens, le paysage ; ils conçoivent la dimension politique de l'œuvre d'art dans la perspective d'une logique d'action et non de représentation.

Une partie du texte d'introduction de ce numéro se veut une contribution à la construction de l'intelligibilité de la spatialité de l'art contemporain. Elle présente, du point de vue de la géographie contemporaine, les éléments théoriques d'une compréhension du changement de matrice disciplinaire opéré par le Land Art états-unien, et s'appuie tout particulièrement sur la pratique, les objets et les citations de Dennis Oppenheim et de Christo et Jeanne-Claude. En rechargeant de sens la notion de land (dans Land Art), elle trouve les fondements d'un schème d'intelligibilité de la dimension spatiale des arts contemporains, dans leurs pratiques, leurs objets et leurs visées. Une deuxième partie place les textes rassemblés dans le numéro, dans cette perspective théorique pour donner à voir un ensemble de pratiques, objets, disciplines et paradigmes amenés par ce renouvellement pluridisciplinaire. Ce faisant, elle démontre que l'art n'est pas simplement objet construit de la pluridisciplinarité, mais qu'il concourt à sa construction au titre reconnu de discipline (voire science) de l'espace.
The integration of graphene into microelectronic devices
Authors: Ruhl Guenther , Wittmann Sebastian , Koenig Matthias , Neumaier Daniel
Published: May 2017

Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge. Regarding the graphene/metal contact intensive research was done and recently substantial advancements were made towards contact resistances applicable for electronic devices. Generally speaking the crucial issues for graphene integration are identified today and the corresponding research tasks can be clearly defined.
A Massive Molecular Outflow in the Dense Dust Core AGAL G337.916-00.477
Authors: Torii Kazufumi , Hattori Yusuke , Hasegawa Keisuke , Ohama Akio , Yamamoto Hiroaki , Tachihara Kengo , Tokuda Kazuki , Onishi Toshikazu , Hattori Yasuki , Ishihara Daisuke , Kaneda Hidehiro , Fukui Yasuo
Published: May 2017

Massive molecular outflows erupting from high-mass young stellar objects (YSOs) provide important clues to understanding the mechanism of high-mass star formation. Based on new CO J = 3–2 and J = 1–0 observations using the Atacama Submillimeter Telescope Experiment (ASTE) and Mopra telescope facilities, we discovered a massive bipolar outflow associated with the dense dust core AGAL G337.916-00.477 (AGAL337.9-S), located 3.48 kpc from the Sun. The outflow lobes have extensions of less than 1 pc—and thus were not fully resolved in the angular resolutions of ASTE and Mopra—and masses of ∼50 M
⊙. The maximum velocities of the outflow lobes are as high as 36–40

. Our analysis of the infrared and submillimeter data indicates that AGAL337.9-S is in an early evolutionary stage of high-mass star formation, having the total far-infrared luminosity of

. We also found that another dust core, AGAL G337.922-00.456 (AGAL337.9-N), located 2′ north of AGAL337.9-S, is a high-mass YSO in an earlier evolutionary stage than AGAL337.9-S, as it is less bright in the mid-infrared than AGAL337.9-S.
SIMP J013656.5+093347 Is Likely a Planetary-mass Object in the Carina-Near Moving Group
Authors: Gagné Jonathan , Faherty Jacqueline K. , Burgasser Adam J. , Artigau Étienne , Bouchard Sandie , Albert Loïc , Lafrenière David , Doyon René , Gagliuffi Daniella C. Bardalez
Published: May 2017

We report on the discovery that the nearby (∼6 pc) photometrically variable T2.5 dwarf SIMP J013656.5+093347 is a likely member of the ∼200 Myr old Carina-Near moving group with a probability of >99.9% based on its full kinematics. Our

measurement of 50.9 ± 0.8 km s−1 combined with the known rotation period inferred from variability measurements provide a lower limit of 1.01 ± 0.02

on the radius of SIMP 0136+0933, an independent verification that it must be younger than ∼950 Myr, according to evolution models. We estimate a field interloper probability of 0.2% based on the density of field T0–T5 dwarfs. At the age of Carina-Near, SIMP 0136+0933 has an estimated mass of 12.7 ± 1.0

and is predicted to have burned roughly half of its original deuterium. SIMP 0136+0933 is the closest known young moving group member to the Sun and is one of only a few known young T dwarfs, making it an important benchmark for understanding the atmospheres of young planetary-mass objects.
Lactobacillus fermentum IM12 attenuates inflammation in mice by inhibiting NF-κB-STAT3 signalling pathway
Authors: Lim S.-M. , Jang H.M. , Jang S.-E. , Han M.J. , Kim D.-H.
Published: May 2017

In the present study, we isolated Lactobacillus fermentum IM12 from human gut microbiota, which strongly inhibited interleukin (IL)-6 expression and STAT3 activation in lipopolysaccharide (LPS)-stimulated murine peritoneal macrophages, and examined its anti-inflammatory effect in mice with carrageenan-induced hind-paw oedema (CIE) or 2,4,6-trinitrobenzene sulfonic acid (TNBS)-induced colitis (TIC). Oral administration of IM12 (0.2×109, 1×109 or 5×109 cfu/mouse, once a day for 3 days) in mice with CIE significantly suppressed the increase of oedema volume and thickness, as well as myeloperoxidase activity and IL-6, IL-17, NO, and prostaglandin E2 levels in the carrageenan-stimulated paw. Treatment with IM12 (1×109 cfu/mouse, once a day for 3 days) in mice with TIC significantly suppressed colon shortening, and myeloperoxidase activity and IL-6 and IL-17 levels. Treatment with IM12 in mice with CIE or TIC also suppressed the expression of inducible NO synthase (iNOS) and cyclooxygenase (COX)-2, as well as activation of nuclear factor kappa beta (NF-κB) and signal transducer and activator of transcription 3 (STAT3). Furthermore, IM12 significantly inhibited the expression of iNOS, and COX-2, as well as activation of NF-κB in LPS-stimulated mouse peritoneal macrophages. The inflammatory effect of heat-inactivated IM12 was significantly different to that of live IM12 in mice with TIC, although anti-inflammatory effect of IM12 was reduced by heat treatment. Based on these findings, IM12 may attenuate inflammation by inhibiting NF-κB-STAT3 signalling pathway.
Bacillus coagulans GBI-30, 6086 increases plant protein digestion in a dynamic, computer-controlled in vitro model of the small intestine (TIM-1)
Authors: Keller D. , Van Dinter R. , Cash H. , Farmer S. , Venema K.
Published: May 2017

The aim of this study was to assess the potential of the probiotic Bacillus coagulans GBI-30, 6086 [GanedenBC30] (BC30) to aid in protein digestion of alimentary plant proteins. To test this, three plant proteins, from pea, soy and rice, were digested in a validated in vitro model of the stomach and small intestine (TIM-1) in the absence and in the presence of BC30. Samples were taken from the TIM-1 fractions that mimic uptake of amino acids by the host and analysed for α-amino nitrogen (AAN) and total nitrogen (TN). Both were increased by BC30 for all three plant proteins sources. The ratio of TN/AAN indicated that for pea protein digestion was increased by BC30, but the degree of polymerisation of the liberated small peptides and free amino acids was not changed. For soy and rice, however, BC30 showed a 2-fold reduction in the TN/AAN ratio, indicating that the liberated digestion products formed during digestion in the presence of BC30 were shorter peptides and more free amino acids, than those liberated in the absence of BC30. As BC30 increased protein digestion and uptake in the upper gastrointestinal (GI) tract, it consequently also reduced the amount of protein that would be delivered to the colon, which could there be fermented into toxic metabolites by the gut microbiota. Thus, the enhanced protein digestion by BC30 showed a dual benefit: enhanced amino acid bioavailability from plant proteins in the upper GI tract, and a healthier environment in the colon.
A review of objective assessments of orthopaedic analgesic efficacy of non-steroidal anti-inflammatory drugs in horses
Authors: Foreman J.H.
Published: May 2017

There are a limited number of published objective assessments of the orthopaedic efficacy of various non-steroidal anti-inflammatory drugs (NSAIDs) in horses. Several different models of pain in horses have been used, but the least invasive orthopaedic model is the reversible foot lameness model using a shoe with either a mechanical heart bar or an eccentrically-placed threaded nut accommodating a bolt, with both models allowing variable levels of lameness after tightening of the bar or bolt against the solar surface of the foot. These and other models have yielded objective data, reviewed here, on NSAID efficacy in orthopaedic conditions. Phenylbutazone and flunixin are of comparable efficacy, and each is superior to ketoprofen, in the reversible model of foot pain, evidenced at rest, during treadmill exercise, and during recovery after exercise. The selective cyclooxygenase (COX)-2 inhibitor firocoxib, given either orally or intravenously, appears to be an effective alternative to traditional pan-COX-inhibiting NSAIDs, but an initial three-fold loading dose is necessary with intravenous firocoxib to achieve steady state and full efficacy faster than the label dose allows. Meloxicam has also been shown to be effective in two published orthopaedic studies. Acetaminophen/paracetamol has shown some initial promise in preliminary studies using the reversible model of foot pain. Combination therapy should involve appropriately-dosed NSAIDs with differing onsets and durations, whereas drugs with similar onsets and durations may not be synergistic. Sanctioning bodies and local or federal laws may restrict or prohibit the use of NSAIDs before or during equestrian competition.
Sampling dried figs for aflatoxin - Part II: effect of sampling plan design on reducing the risk of misclassifying lots
Authors: Ozer H. , Basegmez H.I. Oktay , Whitaker T.B. , Slate A.B. , Giesbrecht F.G.
Published: May 2017

Because aflatoxin limits vary widely among regulating countries, the Codex Committee on Contaminants in Foods (CCCF) began work in 2006 to harmonise maximum levels (MLs) and sampling plans for aflatoxin in dried figs. Studies were developed to measure the variability and distribution among replicated sample aflatoxin test results taken from the same aflatoxin contaminated lot of dried figs so that a model could be developed to evaluate the risk of misclassifying lots of dried figs by aflatoxin sampling plan designs. The model was then be used by the CCCF electronic working group (eWG) to recommend MLs and aflatoxin sampling plan designs to the full CCCF membership for lots traded in the export market. Sixteen 10 kg samples were taken from each of 20 dried fig lots with varying levels of contamination. The observed aflatoxin distribution among the 16-aflatoxin sample test results was compared to the normal, lognormal, compound gamma, and negative binomial distributions. The negative binomial distribution was selected to model aflatoxin distribution among sample test results because it gave acceptable fits to observed aflatoxin distributions among sample test results taken from the same contaminated lot. Using the negative binomial distribution, a computer model was developed to show the effect of the number and size of samples and the accept/reject limits on the chances of rejecting good lots (seller's risk) and accepting bad lots (buyer's risk). The information was shared with the CCCF eWG and in March 2012, the 6th session of CCCF adopted at step 5/8 an aflatoxin sampling plan where three 10 kg samples must all test less than an ML of 10 µg/kg total aflatoxins to accept a dried fig lot. The 35th Session of the Codex Alimentarius Commission met in July 2012 and adopted the CCCF recommendations for the ML and the sampling plan as an official Codex standard.
Understanding the benefits of product-service system for involved parties in remanufacturing
Authors: Priyono Anjar
Published: May 2017

Purpose: This study aims to analyse the benefit provided by interested parties in remanufacturing including manufacturing companies, original equipment manufacturers and customers. Existing studies examining Produc-Service System (PSS) focus on relationship between two parties, either between OEMs and customers or between remanufacturers with customers. This study attempts to fill the gap by investigating how the PSS offers benefit to OEMs, remanufacturers and customers.Methodology: This research used case study method to examine the practice of PSS in remanufacturing companies. Qualitative approach was employed to analyse emerging problems in the case companies and the researcher collaborate with the involved parties to create new knowledge. Thus, this process can offer theoretical insights as well as practical insights.Findings: All parties involved in PSS consistently gain benefit from adopting the practice. From the perspective of remanufacturers, the major benefit of remanufacturers adopting PSS is that it can help reduce the uncertainties regarding time, quantity and quality of returned cores. Due to reduced uncertainties, remanufacturers gain benefit from higher profitability and more environmental friendly products. These benefits provide multiplier effects to both customers and OEMs.Practical implications: This study offers benefits to managers in the sense that it provides guidance for managers of remanufacturers to better manage remanufacturing operation so that it becomes more environmentally friendly and economically profitable.Originality/value: It is the first time that the benefits of PSS to support remanufacturing are viewed from integrative perspective – i.e. manufacturers, remanufacturers, and customers.
Optimizing two-dimensional renewable warranty policies for sensor embedded remanufactured products
Authors: Alqahtani Ammar , Gupta Surendra M.
Published: May 2017

Purpose: Remanufactured products, in addition to being environment friendly, are popular with consumers because they can offer the latest technology with lower prices in comparison to brand new products. However, some consumers are hesitant to buy remanufactured products because they are skeptical about the quality of the remanufactured product and thus are unsure of the extent to which the product will render services when compared to a new product. A strategy that remanufacturers may employ to entice customers is to offer warranties on remanufactured products. To that end, this paper studies and scrutinizes the impact of offering renewing warranties on remanufactured products. Specifically, the paper suggests a methodology which simultaneously minimizes the cost incurred by the remanufacturers and maximizes the confidence of the consumers towards buying remanufacturing products.Design/methodology/approach: This study uses discrete-event simulation to optimize the implementation of a two-dimensional renewing warranty policy for remanufactured products. The implementation is illustrated using a specific product recovery system called the Advanced Remanufacturing-To-Order (ARTO) system. The experiments used in the study were designed using Taguchi’s Orthogonal Arrays to represent the entire domain of the recovery system so as to observe the system behavior under various experimental conditions. In order to determine the optimum strategy offered by the remanufacturer, various warranty and preventive maintenance scenarios were analyzed using pairwise t-tests along with one-way analysis of variance (ANOVA) and Tukey pairwise comparisons tests for every scenario.Findings: The proposed methodology is able to simultaneously minimize the cost incurred by the remanufacturer, optimize the warranty price and period, and optimize the preventive maintenance strategy resulting in increased consumer confidence.Originality/value: This is the first study that evaluates in a quantitative and comprehensive manner the potential benefits of offering warranties with preventive maintenance on remanufactured products.
Optimal inventory policy in a closed loop supply chain system with multiple periods
Authors: A. SasiKumar , K Natarajan , MuthuRathna Sapabathy Ramasubramaniam , K.K Deepaknallasamy
Published: May 2017

Purpose: This paper aims to model and optimize the closed loop supply chain for maximizing the profit by considering the fixed order quantity inventory policy in various sites at multiple periods.Design/methodology/approach: In forward supply chain, a standard inventory policy can be followed when the product moves from manufacturer, distributer, retailer and customer but the inventory in the reverse supply chain of the product with the similar standard policy is very difficult to manage. This model investigates the standard policy of fixed order quantity by considering the three major types of return-recovery pair such as commercial returns, end- of- use returns, end –of- life returns and their inventory positioning at multiple periods.  The model is configured as mixed integer linear programming and solved by IBM ILOG CPLEX OPL studio.Findings: To find the performance of the model a numerical example is considered for a product with three Parts (A which of 2nos, B and C) for 12 multiple periods. The results of the analysis show that the manufacturer can know how much should to be manufacture in multiple periods based on Variations of the demand by adopting the FOQ inventory policy at different sites considering its capacity constraints. In addition, it is important how much of parts should be purchased from the supplier at the given 12 periods.Originality/value: A sensitivity analysis is performed to validate the proposed model two parts. First part of the analysis will focus on the inventory of product and parts and second part of analysis focus on profit of the company. The analysis which provides some insights in to the structure of the model.
Using a Structured Checklist to Improve the Orthopedic Ward Round: A Prospective Cohort Study
Authors: Talia Adrian J. , Drummond James , Muirhead Cameron , Tran Phong
Published: May 2017

Comprehensive and timely documentation on orthopedic ward rounds continues to be problematic, leading to delayed or inappropriate patient care and miscommunication between health care providers. The authors introduced a simple checklist to improve the documentation on orthopedic ward rounds in their institution. A prospective cohort study was performed. Standard care was provided for cohort A. During a 2-week period, the documentation of patient care by physicians following a ward round was assessed in terms of venous thromboembolism prophylaxis, fasting status, wound or dressing plan, weight-bearing status, and important surgical details. The physicians were blinded to this initial review. For cohort B, a structured ward round checklist was introduced during a 2-week period. A total of 132 patient encounters were recorded in cohort A. Important issues that were rarely discussed included vital signs (11.4%), venous thromboembolism prophylaxis (9.8%), and bowel status (3.8%). Issues that were poorly documented included fasting status (9.1%), wound or dressing plan (6.8%), and weight-bearing status (11.4%). After introduction of the checklist, daily documentation of surgical details improved from 38.6% to 85.3% of patient encounters. Fasting status documentation improved from 9.1% to 70.6% of patient encounters. Venous thromboembolism prophylaxis discussion increased from 9.8% to 45.6% of the time, while its documentation improved from 6.8% to 92.6%. Documentation of weight-bearing status improved from 11.4% to 83.8% (all
P
<.0001). The use of a structured checklist during orthopedic ward rounds led to significant improvement in both the consideration and the documentation of key aspects of surgical care. [
Orthopedics.
2017; 40(4):e663–e667.]
Formation of the Economic Security Level of Mining and Processing Enterprise on the Basis of the Availability Factor of the Task
Authors: Pilova Dar'ya
Published: May 2017

Formation procedure of economic security of ore-mining and processing enterprises including availability factor of the task, is substantiated. The availability factor of the task to ship products is determined. The way of impact of the factors that determine the volume of major products of mining and processing enterprise is analyzed.
Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method
Authors: Choi Jung Woo , Park Jong Hwi , Seo Jung Doo , Kim Jung Gyu , Kyun Myung Ok , Ku Kap Ryeol , Kim Hwang Ju , Lee Dong Hoon , Jang Yeon Suk , Lee Won Jae
Published: May 2017

The method to attach seed to crucible lid as well as seed quality is very important for obtaining high quality crystals. Therefore, modified seeding method was developed for improving adhesive layer between seed and graphite crucible lid. SiC single crystal grown with modified seeding method definitely exhibited lower micropipe density (MPD) and lower full width at half maximum (FWHM) values comparing with values from conventional seeding method. Etch pit density of SiC crystal was successfully decreased with using the modified seeding method.
Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
Authors: Hauck Martin , Weisse Julietta , Lehmeyer Johannes A.F. , Pobegen Gregor , Weber Heiko B. , Krieger M.
Published: May 2017

Drain current DLTS (ID-DLTS) and Hall effect measurements were carried out on two types of 4H-SiC n-MOSFETs, one with a post oxidation annealing (POA) in NO and one in O2 atmosphere. Hall effect measurements show a reduction of Dit by POA in NO compared to POA in O2 and, as a consequence, a higher inversion charge carrier density, while the Hall mobility is only weakly affected by the introduction of nitrogen during POA. Based on ID-DLTS we provide a method for a quantitative and selective investigation of near interface traps (NITs) in the oxide. It is shown that POA in NO strongly reduces the density of NITs.
Anomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements
Authors: Fiorenza Patrick , La Magna Antonino , Vivona Marilena , Giannazzo Filippo , Roccaforte Fabrizio
Published: May 2017

This paper reports on the conduction mechanisms and trapping effects in SiO2/4H-SiC MOS-based devices subjected to post deposition annealing in N2O. In particular, the anomalous Fowler-Nordheim (FN) tunnelling through the SiO2/4H-SiC barrier observed under consecutive reverse bias sweeps was studied by temperature and time dependent gate current measurements. The excess of gate current with respect to the theoretical FN predictions was explained by a charge-discharge mechanism of Near Interface Traps (NITs) in the oxide. The gate current transient was described with a semi-empirical analytical model, modifying the standard FN model with a time-dependent electric field to account for the neutralization of trapped charges at NITs.
4H-SiC Defects Evolution by Thermal Processes
Authors: Piluso Nicolo , di Stefano Maria Ausilia , Lorenti Simona , La Via Francesco
Published: May 2017

4H-SiC defects evolution after thermal processes has been evaluated. Different annealing temperatures have been used to decrease the defect density of epitaxial layer (as stacking faults) and recover the damage occurred after ion implantation. The propagation of defects has been detected by Photoluminescence tool and monitored during the thermal processes. The results show that implants do not affect the surface roughness and how a preliminary annealing process, before ion implantation step, can be useful in order to reduce the SFs density. It shown the effect of tuned thermal process. A kind of defect, generated by implant and subsequent annealing, can be removed by an appropriate thermal budget, while others can increase. A fine tuning of thermal process parameters, temperature and timing, is useful to recover the crystallographic quality of the epilayer and increase the yield of the power device.
Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation
Authors: Yao Yong Zhao , Ishikawa Yukari , Sugawara Yoshihiro , Takahashi Yumiko , Hirano Keiichi
Published: May 2017

We have studied threading dislocations (TDs) in 4H-SiC by means of X-ray topography (XRT) taken under 6 equivalent g-vector of 11-28 and two different chemical etching methods. Threading screw and mixed-type dislocations (TSDs and TMDs) can be distinguished and the direction of the a-components of TMDs can be determined by XRT. Efforts have been made to examine if there are features of etch pits that can be used to distinguish TMDs from TSDs.
Low Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL Imaging
Authors: Ashida Koji , Aiso Toru , Okamoto Manabu , Seki Hirokazu , Kitabatake Makoto , Kaneko Tadaaki
Published: May 2017

Low energy electron channeling contrast imaging (LE-ECCI) by scanning electron microscopy (SEM) was adopted to evaluate both the direction and length of the topmost hexagonal stacking sequence of the Si–C bilayers on 4H-SiC (0001). LE-ECCI revealed the change in the dangling bond configuration at step edges depending on SiC thermal etching rate, which was difficult to be detected by optical microscope (OM) and even by atomic force microscopy (AFM). Furthermore, LE-ECCI was applied to evaluate the atomic structure of polytype inclusions in commercially available 3-inch diameter 4o off-axis 4H-SiC (0001) epitaxial wafer. The validity of LE-ECCI was discussed by comparing the one with two kinds of widely used wafer inspection methods: confocal OM with differential interference contrast (CDIC-OM) and photoluminescence (PL) imaging.
SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
Authors: Tabuchi Yuki , Sonoda Masashi , Ashida Koji , Kaneko Tadaaki , Ohtani Noboru , Katsuno Masakazu , Sato Shinya , Tsuge Hiroshi , Fujimoto Tatsuo
Published: May 2017

Step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface was investigated using low-voltage electron scanning microscopy (LVSEM) and electron channeling contrast (ECC) imaging. LVSEM observations revealed that the step bunching resulted in the formation of atomically flat wide (~250 nm) terraces on the surface, and the terraces tended to form in pairs. The two terraces in paired terraces often showed the same electron channeling contrast as each other, and the contrast of the two terraces, either bright or dark, appeared to be determined by the orthogonal misorientation of substrates. On the basis of these results, the formation mechanism of the step-bunched structure on a vicinal 4H-SiC (0001) surface is discussed.
Creation and Functionalization of Defects in SiC by Proton Beam Writing
Authors: Ohshima Takeshi , Honda Tomoya , Onoda Shinobu , Makino Takahiro , Haruyama Moriyoshi , Kamiya Tomihiro , Satoh Takahiro , Hijikata Yasuto , Kada Wataru , Hanaizumi Osamu , Lohrmann Alexander , Klein James R. , Johnson Brett C. , McCallum Jeffrey C. , Castelletto Stefania , Gibson Brant C. , Kraus Hannes , Dyakonov Vladimir , Astakhov G.V.
Published: May 2017

Proton beam writing was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC by proton beam writing using 1.7 MeV-proton micro beams were investigated at room temperature using confocal laser scanning microscope. As a result, photoluminescence peak around 900 nm associated with silicon vacancy was observed for the irradiated SiC without post implantation process such as annealing. The overall depth profile of photon counts detected from irradiated areas is in good agreement with simulated vacancy depth profile. This suggests that silicon vacancy can be applied to ion tracking detector. In addition, since silicon vacancy is known as single photon source of which spins can be controlled at RT, PBW is expected to be a useful tool to fabricate spin qubits.
Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
Authors: Lilja Louise , Farkas Ildiko , Booker Ian , Hassan Jawad , Janzén Erik , Bergman J. Peder
Published: May 2017

In this study we have grown thick 4H-SiC epitaxial layers with different n-type doping levels in the range 1E15 cm-3 to mid 1E18 cm-3, in order to investigate the influence on carrier lifetime. The epilayers were grown with identical growth conditions except the doping level on comparable substrates, in order to minimize the influence of other parameters than the n-type doping level. We have found a drastic decrease in carrier lifetime with increasing n-type doping level. Epilayers were further characterized with low temperature photoluminescence and deep level transient spectroscopy.
SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
Authors: Murayama Kenta , Hori Tsukasa , Harada Shunta , Xiao S. , Tagawa M. , Ujihara Toru
Published: May 2017

In order to achieve a high-quality SiC crystal in solution growth, one of the most difficult issues is to grow a thick layer on Si face avoiding polytype transformation. In this case, two-dimensional nucleation, which leads to the polytype transformation, is frequently induced because a density of threading screw dislocations acting as a source of spiral step decreases and wide terraces form by step bunching as growth proceeds. Therefore, it is very difficult to stabilize the polytype of crystals grown with extremely low density of threading screw dislocations. In this study, we tried to overcome these problems by using specially designed seed crystal and optimizing growth temperature and temperature distribution. We successfully grew thick low-threading-dislocation density SiC crystal without polytype transformation under the condition of high growth temperature and homogeneous temperature distribution.
New Evidence for the Second Conduction Band in 4H SiC
Authors: Klahold Walter M. , Tabachnick Charles , Freedman Gabriel , Devaty Robert P. , Choyke Wolfgang J.
Published: May 2017

Differential absorption measurements were taken on ultra-pure boule pieces and epitaxial films of 4H SiC. The energy range of particular interest is from 3.40 eV to 3.52 eV. The free exciton energy gap associated with the second lowest conduction band at the M point in the Brillouin zone was determined to be EGX-2 = 3.4107 eV. This value is obtained from phonon assisted free exciton transitions involving the second conduction band measured in transmission with polarization E⊥c. The energy separation of the two lowest conduction bands is determined to be 144 ± 2 meV. Some replica peaks attributable to the spin orbit splitting in the valence band are also seen.
On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC
Authors: Vasilevskiy Konstantin , Roy Sandip Kumar , Wood Neal , Horsfall Alton B. , Wright Nick G.
Published: May 2017

Low field electron mobility in heavily nitrogen doped 4H-SiC epitaxial layers as well as in the regions formed by ion implantation was extracted from Hall and van der Pauw measurements. The measurements were done at room temperature in 4H-SiC samples with carrier concentrations ranged from 2.8×1018 to 2.3×1019 cm-3. Fitting parameters in empirical expression given by Caughey and Thomas for room temperature low field electron mobility depending on carrier concentration in 4H-SiC were extracted.
Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments
Authors: Ayedh Hussein M. , Iwamoto Naoya , Nipoti Roberta , Hallén Anders , Svensson Bengt Gunnar
Published: May 2017

The current work is devoted to studying the evolution of deep level defects in the lower half of the 4H-SiC bandgap after high temperature processing and ion implantation. Two as-grown and pre-oxidized 4H-SiC sets of samples have been thermally treated at temperatures up to 1950 °C for 10 min duration using RF inductive heating. Another set of as grown samples was implanted by 4.2 MeV Si ions at room temperature (RT) with different doses (1-4×108 cm-2). The so-called “D-center” at EV+0.6 eV dominates and forms after the elevated heat treatments, while it shows no change after the ion implantations (EV denotes the valence band edge). In contrast, the concentration of the so-called HK4 level at EV+1.44 eV increases with the implantation dose, whereas it anneals out after heat treatment at ≥ 1700 °C.
Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
Authors: Hori Tsukasa , Murayama Kenta , Harada Shunta , Xiao S. , Tagawa M. , Ujihara Toru
Published: May 2017

The relationship between surface morphology and spatial distribution of basal plane dislocations in 4H-SiC crystal grown by top-seeded solution growth on the C face was investigated by the differential interference microscopy as well as X-ray topography. Basal plane dislocations were generated at the boundaries of the domains with the different macrosteps advance directions. On the other hand, at the position where macrosteps advance to the same direction, BPDs were hardly observed. This results suggest that BPD density can be decreased by the suppression of the collision of macrosteps during the solution growth on the C face controlling the surface morphology.
Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells
Authors: Ma Quan Bao , Carvalho Patricia Almeida , Galeckas Augustinas , Azarov Alexander , Hovden Sigurd , Thøgersen Annett , Wright Daniel N. , Diplas Spyros , Løvvik Ole Martin , Jokubavicius Valdas , Sun Jian Wu , Syväjärvi Mikael , Svensson Bengt Gunnar
Published: May 2017

Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×1017 atoms/cm2 in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 °C for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×1021 cm-3 in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density.
Detection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL Analysis
Authors: Litrico Grazia , Piluso Nicolo , La Via Francesco
Published: May 2017

A new technique with micro-Raman and micro-PL analysis is proposed to detect defects in 3C-SiC epitaxial films. The high-power of an above band-gap laser is used to increase locally the free carriers density in un-doped epitaxial material (n < 1016 cm-3). The electronic plasma couples with the longitudinal optical (LO) Raman mode determining the so-called LOPC effect. The Raman shift of the LO phonon-plasmon-coupled mode (LOPC) changes as the free carriers density is modified. Crystallographic defects induce a modification of the free carriers density determining a change in the Raman shift of LO mode and in the PL emission from the 3C-SiC gap. Thus we suppose that the results observed are connected to crystallographic defects and we propose this technique as a methodology to analyze extended defects in 3C-SiC material because a detailed study of defects in 3C-SiC has not yet been performed.
Effect of 3C-SiC Irradiation with 8 MeV Protons
Authors: Lebedev Alexander A. , Ber Boris Ya. , Oganesyan Gagik A. , Belov Sergey V. , Seredova Natalia. V. , Nikitina Irina P. , Lebedev Sergey P. , Shakhov Lev V. , Kozlovski Vitalii V.
Published: May 2017

Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was found that the carrier removal rate (Vd) reaches a value of ~110 cm-1. The full compensation of samples with an initial concentration of (1-2) x 1018 cm -3 was estimated to occur at doses of about 6 x 1015 cm -2. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called "defective" photoluminescence was observed in 3C-SiC.
Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
Authors: Roy Sandip Kumar , Ibanez Jesus Urresti , O'Neill Anthony , Wright Nick G. , Horsfall Alton B.
Published: May 2017

Oxygen free Ohmic contacts are essential for the realisation of high performance devices. Ohmic contacts in SiC often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O2 rich ambient at temperatures of 800 °C or less, affecting the electrical and surface characteristics. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOS structures. In order to prevent damage during the high-k formation the use of silicon nitride as a passivation layer, capable of protecting the contacts during annealing, has been investigated. In this work we have investigated and compared silicon nitride protected high-κ dielectric SiC based MOS capacitors with the unprotected SiC MOS devices in terms of electrical and optical characteristics.