bluuebunny/crossref_metadata_2025 huggingface dataset:
Pest und Feuer. Die Londoner Doppelkatastrophe 1665/66Plague and Fire. The London Double Catastrophe of 1665/66
Authors: Münch Paul
Published: February 2009

In den 1660er Jahren wurde London von der größten Doppelkatastrophe seiner Geschichte betroffen. Sie traf auf eine Stadtgesellschaft, der die Restauration König Karls II. nach einer langen Phase puritanischer Einschränkungen wieder ein freieres Leben ermöglichte. 1665 forderte die Pest in der Hauptstadt über 100 000 Todesopfer, 1666 zerstörte ein Großbrand binnen weniger Tage die City. Der Beitrag beschreibt den Verlauf und bilanziert die unterschiedlichen Schäden und Wirkungen beider Katastrophen, im Zentrum aber steht die Frage, wie die Zeitgenossen mit den Ereignissen umgingen. Viele sahen in ihnen noch Heimsuchungen, die Gott der sündigen Menschheit durch Kometen ankündigte, doch man versuchte die Geschehnisse auch schon mehr oder weniger rational aus natürlichen Ursachen oder menschlichem Versagen zu erklären. Beide Katastrophen offenbarten tiefe politische, konfessionelle und soziale Verwerfungen einer Gesellschaft, in der die Überlebenschancen höchst ungleich verteilt waren. Sie verstärkten die staatliche Macht, führten aber auch zu Modernisierungen, die solche existentiellen Bedrohungen künftig verhinderten oder doch abmilderten. Die Reaktionen des königlichen Flottensekretärs Samuel Pepys, der in seinem Tagebuch die Doppelkatastrophe detailliert und unter Preisgabe intimster Details kommentierte, zeigen, daß man Katastrophenerfahrungen nicht vorschnell verallgemeinern darf. Wie man mit Unglück umgeht, hängt stets von der individuellen Lage und der mentalen Disposition eines Menschen ab.
Intellectual History mit Intellektuellen und ohne sie. Facetten neuerer geistesgeschichtlicher ForschungIntellectual History with Intellectuals and without them. Facets of new Research
Authors: Gallus Alexander
Published: February 2009

Zugleich Besprechung von:

Ingrid Gilcher-Holtey (Hrsg.), Zwischen den Fronten. Positionskämpfe europäischer Intellektueller im 20. Jahrhundert

Lutz Raphael/Heinz-Elmar Tenorth (Hrsg.), Ideen als gesellschaftliche Gestaltungskraft im Europa der Neuzeit. Beiträge für eine erneuerte Geistesgeschichte
Interaction of Hydrogen with Bimetallic Surfaces
Authors: Behm R.J.
Published: February 2009

The interaction of hydrogen with bimetallic surfaces is assessed and discussed using structurally well defined PdAu and PtRu single crystal surfaces as model systems. The description is based on a correlation between the hydrogen adsorption behavior and the presence and abundance of specific bimetallic nanostructures. The latter are determined quantitatively by high resolution scanning tunneling microscopy. Following the changes in the hydrogen adsorption behavior on surfaces with systematically varied composition and thus varying concentrations of specific structural elements and adsorption ensembles allows a direct correlation between structural and chemical properties and thus to identify the adsorption characteristics of individual adsorption ensembles. This provides a structural basis for parallel theoretical studies, which are essential for a systematic understanding of the complex changes in the adsorption properties.Based on results from experimental studies and calculations, the role of electronic strain and ligand effects, including lateral and vertical ligands, as well the influence of geometric ensemble effects on the hydrogen adsorption characteristics are discussed. The distinct differences between surfaces modified by a monolayer or monolayer islands of a second metal and mixed surfaces such as surface alloys or alloy surfaces are discussed in these terms.
Aspects of Molecular Chirality at Metal Surfaces
Authors: Ernst Karl-Heinz
Published: February 2009

Phenomena like transfer, expression and amplification of chirality in molecular monolayers are reviewed. Chirality can be bestowed onto achiral surfaces by adsorption of chiral molecules. This offers a good opportunity to study two-dimensional chiral crystallization phenomena, like lateral resolution of enantiomers or the transfer of handedness from single molecules into mesoscopic ensembles at high resolution with scanning probe microscopy. Induction of homochirality on surfaces via cooperatively amplified interactions in molecular monolayers is a new phenomenon of supramolecular surface chirality. Prochiral molecules will turn into either handedness upon adsorption, but doping with intrinsically chiral molecules breaks this symmetry and induces homochirality. A similar effect is induced by a small enantiomeric excess. The excess molecules provide the chiral bias that becomes amplified into single lattice chirality.
Surface-Confined Coordination Chemistry with Porphyrins and Phthalocyanines: Aspects of Formation, Electronic Structure, and Reactivity
Authors: Gottfried Michael , Marbach Hubertus
Published: February 2009

Recent years have seen rapid progress in the field of surface-confined coordination chemistry. Adsorbed metal complexes of tetrapyrroles (porphyrins, phthalocyanines, corroles) are especially interesting in this context, since they combine a planar structure-determining element with an active site. While earlier studies of adsorbed metallo-tetrapyrroles mainly addressed aspects of molecular self-assembly, the focus of interest has shifted gradually to electronic structure and chemical reactivity. This article gives an overview of recent advances in the field of surface chemistry with tetrapyrroles. In particular, the following aspects will be discussed: intramolecular conformation and supramolecular ordering, electronic interaction with the substrate, surface-confined synthesis, and ligand-related effects such as the surface trans effect.
Ligand Effect in Hydrogen Adsorption on Epitaxial Nickel Films
Authors: Heinz Klaus , Hammer Lutz , Gumler Bernd , Meyer Wolfgang , Schmidt Andreas
Published: February 2009

The adsorption structure of hydrogen on ultrathin epitaxial nickel films in pseudomorphic arrangement on the unreconstructed Ir(100) surface is investigated by quantitative low-energy electron diffraction (LEED). This is highly interesting in the light of the fact that on Ni(100) adsorption is in hollow sites whilst on unreconstructed Ir(100) it is exclusively in bridge sites. On Ni films thicker than 1 monolayer (ML) the adsorption is in 4-fold coordinated hollow sites as it is on Ni(100). This is in spite of the considerable tensile strain of the Ni film (+8.9%) and is interpreted by the dominance of ensemble effects in the hydrogen bonding. In contrast, on the 1 ML Ni film on Ir(100), with iridium atoms being nearest neighbours to nickel atoms, there is occupation of both bridge and hollow sites of the nickel layer – a clear indication for the presence of ligand effects.
CO Oxidation over a Pt(100) Surface in a Ternary Gas Mixture of CO, NO, and Oxygen
Authors: Imbihl Ronald , Schütz E.
Published: February 2009

Catalytic CO oxidation in a ternary gas mixture of CO, NO and O2 has been studied in the 10–5–10–4 mbar range using a Pt(100) sample as catalyst. Measurements of the reactive sticking coefficients of CO and NO are used to decompose the overall CO oxidation rate into the contributions from oxidation by NO and from oxidation by O2. The experiments are complemented by simulations with a realistic 7-variable model. The surface phase transition hex ↔ 1×1 and the inhibition of NO dissociation and O2 adsorption at high adsorbate coverages lead to significant hysteresis effects.
Synthesis, Structure, and Valency Verification of a Mn6
IIIO2-Cluster
Authors: Prinz Manuel , Raekers Michael , Neumann Manfred , Kuepper Karsten , Khanra Sumit , Weyhermüller Thomas , Chaudhuri Phalguni
Published: February 2009

A new oxime-based hexanuclear MnIII complex containing the structural core [Mn6
III(μ
3-O)2] was synthesized through a general route. We describe the preparation and characterization of the manganese(III) complex [Mn6
III(μ
3-O)2(Salox)6(CH3CH2OH)4{(CH3)3CCOO}2] by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). Therefore we offer the first core level XPS, and XAS reference spectra of polynuclear complexes comprising only Mn(III) ions in octahedral surrounding.
Size and Structure of Palladium Clusters Determined by XRD and HREM
Authors: Suleiman M. , Borchers C. , Guerdane M. , Jisrawi N. M. , Fritsch D. , Kirchheim R. , Pundt A.
Published: February 2009

Scherrer formula is often applied to X-ray-diffraction profiles for the size determination of small size clusters. However, for small clusters this often leads to conflicting results in comparison to other methods. A series of Pd-clusters of different size is studied by X-ray diffraction analysis and transmission electron microscopy. The influence of size and structure on the results is presented and discussed in comparison with theoretical calculations. It will be shown that the different structure of small size systems are one main origin of the conflicts. The structure problem can be overcome by using Fourier Transform of the X-ray diffraction pattern. The importance of the knowledge of the cluster structure was demonstrated by showing its strong influence on the hydrogen solubility.
Slaying the Wagnerian Monster: Hindemith, Das Nusch-Nuschi, and Musical Germanness after the Great War
Authors: Haney Joel
Published: February 2009

With the devastation of the First World War, Germany experienced a traumatic loss of identification with values that had been central to its prewar culture, and these emphatically included musical values. In postwar German art music, this resulted in heavy irony toward the lofty philosophical claims and musical expressiveness that the later nineteenth century had bequeathed to prewar modernism. But it also occasioned bitter attempts to reassert those values, as exemplified by the polemics of Hans Pfitzner. Prominent on both sides of this debate, which found a medium in musical composition as well as musical discourse, were issues of national identity, nationalism, and the legacy of Richard Wagner.

One musical statement that attracted much notice early on was Paul Hindemith's burlesque opera Das Nusch-Nuschi, which premiered in Stuttgart in 1921. Hindemith, then beginning his rapid ascent in the postwar music scene, had based his opera on a Burmese marionette play that scandalously satirized Tristan und Isolde. There is considerable evidence of Hindemith's ironic engagement with Wagner throughout the war, and his opera—the postwar culmination of this trend—abounds with ironic evocations of Tristan.

Training a critical lens on Wagner's legacy, Das Nusch-Nuschi also resonates strongly with a position then being voiced by Paul Bekker, who spoke out against Pfitzner's Wagnerian hypernationalism and called for a decisive internationalist turn in postwar German composition. Specifically, Hindemith's opera sharpens its ironic, anti-Wagnerian tone by reaching beyond German modernism to embrace the Russian “neonationalism” of Igor Stravinsky.
“A Kind of Eloquence Even in Music”: Embracing Different Rhetorics in Late Seventeenth-Century France
Authors: Gibson Jonathan
Published: February 2009

French rhetoricians of the seventeenth century—among them François Fénelon, Bernard Lamy, René Bary, and René Rapin—brought about a profound shift in the landscape of their discipline. Their texts call into question the centrality of rhetorical figures (part of the elocutio), the dispositio, and other artful rhetorical precepts, while placing increased emphasis on delivery (pronuntiatio). In most cases, they realized this new emphasis via one of two novel approaches: the first relied upon a Cartesian taxonomy of the passions, whereas the second sought to abandon precepts altogether in the quest for transparent, or “Natural,” representation. Even while adopting contrasting methods, representatives of both approaches were unanimous in regarding rhetoric and music as sister disciplines. Furthermore, French musicians and rhetoricians alike rejected the prevailing idea that the relationship between these disciplines was hierarchical, with rhetoric the dominant sibling. This shift helps to explain why the notion that music “imitates” the structures and conventions of rhetoric, while popular in other regions, is to be found in no French source after ca. 1640. Yet, many recent studies continue to perpetuate such hierarchies, mapping onto musical works rhetorical concepts unknown or consciously avoided in France.

Relating a nuanced depiction of multiple French rhetorical practices to music-centered writings by Bacilly, La Croix, Lecerf, Grimarest, and others reveals that the very same aesthetic positions evident among rhetoric texts also shaped the era's discourse on music. More broadly, because no tradition existed in French musical discourse of articulating aesthetic matters until Lecerf's Comparaison de la musique italienne et de la musique française (1704–1706), the intersection of music and rhetoric offers a rare means of constructing an aesthetics of musical eloquence in seventeenth-century France.
Characterization of resistance to the prolactin-lowering effects of cabergoline in macroprolactinomas: a study in 122 patients
Authors: Delgrange Etienne , Daems Tania , Verhelst Johan , Abs Roger , Maiter Dominique
Published: February 2009

Context

Macroprolactinomas poorly responsive to dopamine-agonists are often more aggressive and are usually termed ‘resistant’ but this clinical concept has always been defined empirically.

Objective

To define resistance to cabergoline (CAB) on the basis of a dose–response relationship established in a large series of macroprolactinoma patients and to assess the influence of gender and tumor invasiveness on the response to treatment.

Design

Retrospective study.

Methods

One hundred and twenty-two patients (72 women and 50 men) primarily treated with CAB for at least 1 year were included. Main outcome measures were serum prolactin (PRL) and tumor size.

Results

Normalization of PRL was obtained in 115 out of the 122 patients (94%). The majority of patients (96/115, 83%) were controlled with a CAB dose ≤1.5 mg/week. Most of the other patients (19/26) had only a partial resistance, responding to a further increase of the CAB dose. Beyond the dose of 3.5 mg/week, there was no clear advantage in further increasing the dose instead of continuing the treatment at the same dose. Most tumors (98/119 assessable cases, 82%) showed a significant shrinkage during CAB treatment. It was more likely to occur in cases of PRL normalization. Both cavernous sinus invasion and male gender were significantly and independently associated with partial or complete resistance to treatment.

Conclusions

Most macroprolactinomas primarily treated with CAB are adequately controlled with doses ≤1.5 mg/week. About 20% of patients, mainly men and/or those with invasive tumors will require a higher dose of CAB. We suggest defining such patients as resistant to CAB.
Do We Recover from Vacation? Meta‐analysis of Vacation Effects on Health and Well‐being
Authors: de Bloom Jessica , Kompier Michiel , Geurts Sabine , de Weerth Carolina , Taris Toon , Sonnentag Sabine
Published: February 2009

Do We Recover from Vacation? Meta‐analysis of Vacation Effects on Health and Wellbeing: Jessica de Bloom, et al. Department of Work & Organizational Psychology, Behavioural Science Institute, Radboud University Nijmegen, The Netherlands

Objectives

The aim of this meta‐analysis is to investigate to what extent vacation has positive effects on health and well‐being, how long such effects endure after work resumption, and how specific vacation activities and experiences affect these relationships.

Methods

Based on a systematic literature search (PsycInfo, Medline) and methodological exclusion criteria, in a stepwise approach, 7 studies were selected and reviewed. Effect sizes (Cohen's d) were calculated i) for every outcome variable within every study, ii) for every study by averaging the effect sizes per study, and iii) for homogeneous categories of outcome variables (exhaustion, health complaints, life satisfaction).

Results

The results suggest that vacation has positive effects on health and well‐being (small effect, d=+0.43), but that these effects soon fade out after work resumption (small effect, d=–0.38). Our research further demonstrated that vacation activities and experiences have hardly been studied. Therefore, their contribution to vacation effect and fade out remains unclear.

Discussion

Progress in future vacation research will depend on strong research designs that incorporate repeated measurements pre‐, inter‐ and post‐vacation.
Reliability and Validity of the Japanese Version of the Organizational Justice Questionnaire
Authors: Inoue Akiomi , Kawakami Norito , Tsutsumi Akizumi , Shimazu Akihito , Tsuchiya Masao , Ishizaki Masao , Tabata Masaji , Akiyama Miki , Kitazume Akiko , Kuroda Mitsuyo , Kivimäki Mika
Published: February 2009

Reliability and Validity of the Japanese Version of the Organizational Justice Questionnaire: Akiomi Inoue, et al. Department of Mental Health, Graduate School of Medicine, The University of Tokyo

Objectives

Previous European studies reporting low procedural justice and low interactional justice were associated with increased health problems have used a modified version of the Moorman's Organizational Justice Questionnaire (OJQ, Elovainio et al., 2002) to assess organizational justice. We translated the modified OJQ into the Japanese language and examined the internal consistency reliability, and factor‐based and construct validity of this measure. A back‐translation procedure confirmed that the translation was appropriate, pending a minor revision.

Methods

A total of 185 men and 58 women at a manufacturing factory in Japan were surveyed using a mailed questionnaire including the OJQ and other job stressors.

Results

Cronbach alpha coefficients of the two OJQ subscales were high (0.85–0.94) for both sexes. The hypothesized two factors (i.e., procedural justice and interactional justice) were extracted by the factor analysis for men; for women, procedural justice was further split into two separate dimensions supporting a three‐ rather than two‐factor structure. Convergent validity was supported by expected correlations of the OJQ with job control, supervisor support, effort‐reward imbalance, and job future ambiguity in particular among the men.

Conclusion

The present study shows that the Japanese version of the OJQ has acceptable levels of reliability and validity at least for male employees.
Diffusion of Health Education Programs with Reference to Health Behavior Theories in Japanese Workplaces: Present Status and Future Plans
Authors: Fujii Hiroko , Muto Takashi
Published: February 2009

Diffusion of Health Education Programs with Reference to Health Behavior Theories in Japanese Workplaces: Present Status and Future Plans: Hiroko Fujii, et al. Department of Public Health, Dokkyo Medical University School of Medicine

Objectives

This study investigated the characteristics of health education programs and the health behavior theories used to establish more effective programs for Japanese companies.

Methods

The study surveyed 1,372 companies with 500 or more employees. In a cross‐sectional study, the characteristics of the health education programs were surveyed using a questionnaire, which included items regarding target lifestyle‐related diseases and lifestyle areas, and the health behavior theories used to develop the present status and future plans.

Results

One hundred ninety companies responded giving a response rate of 13.8%. At the time of the survey, the most common diseases targeted for primary prevention were obesity (27.1%), hypertension (22.7%), hyperlipidemia (22.1%), and diabetes (22.1%). Approximately 60% of the respondents were implementing health education programs that targeted certain lifestyles, and the most frequently reported target lifestyles were diet (41.0%) and exercise (38.2%). At the time of the survey, 40% of respondents had implemented programs that included health behavior theory, and 55.6% were going to implement such program plans in the future, a significantly higher percentage than at the time of the survey.

Conclusions

In Japanese workplaces, it has been suggested that programs that include health behavior theories have not been implemented frequently enough, but such programs are expected to become more common in the future. The findings of this survey may be useful for planning health education programs using health behavior theories to establish more effective programs for Japanese companies.
Effects of SO2 on Respiratory System of Adult Miyakejima Resident 2 Years after Returning to the Island
Authors: Iwasawa Satoko , Kikuchi Yuriko , Nishiwaki Yuji , Nakano Makiko , Michikawa Takehiro , Tsuboi Tazuru , Tanaka Shigeru , Uemura Takamoto , Ishigami Ai , Nakashima Hiroshi , Takebayashi Toru , Adachi Mitsuru , Morikawa Akihiro , Maruyama Kouichi , Kudo Shoji , Uchiyama Iwao , Omae Kazuyuki
Published: February 2009

Effects of SO2 on Respiratory System of Adult Miyakejima Resident 2 Years after Returning to the Island: Satoko Iwasawa, et al. Department of Preventive Medicine and Public Health, School of Medicine, Keio University

Background

Mt. Oyama in Miyakejima Island erupted in June, 2000. All Miyake villagers were forced to evacuate from the island in September, 2000, due to continuous eruptions and emissions of unsafe amounts of volcanic gas, mainly SO2. From February, 2005, Miyake villagers returned to the island despite volcanic gas still being emitted.

Objectives

This study examines the 2‐yr changes in Miyake residents' respiratory systems from autumn 2004 to November 2006.

Methods

The study population was 823 Miyake adult residents who participated in the health check‐up in 2006. Respiratory effects were evaluated by a questionnaire for respiratory symptoms and spirometry. SO2 has been continuously monitored at 7 sampling points of the inhabited area. The mean SO2 concentration from February 2005 to November 2006 was 0.031 ppm. The area was categorized into 4 areas by SO2 concentration, namely, areas L, H‐1, H‐2 and H‐3, where average SO2 concentrations were 0.019, 0.026, 0.032, and 0.045 ppm, respectively.

Results

The study subjects showed no deterioration in lung function. Prevalence of cough and phlegm among all participants were significantly higher in 2006 than in 2004, and age‐, sex‐ and smoking‐adjusted odds ratios of cough and phlegm were 1.75 (95%CI 1.33–2.30) and 1.44 (1.12–1.87). Prevalence of chronic bronchitis‐like symptoms among normosusceptive subjects in 2006 was 4.1% which was significantly higher than that of 2.1% in 2004 (p=0.035). Compared to area L, the frequencies of phlegm and irritation of the nose were significantly increased in areas H‐2 and H‐3.

Conclusion

SO2 exposure‐related respiratory symptoms were observed in adult Miyakejima residents after returning to the island.
Di‐(2‐ethylhexyl) Phthalate Upregulates ATF3 Expression and Suppresses Apoptosis in Mouse Genital Tubercle
Authors: Liu Xing , Zhang De‐Ying , Li Ya‐Sha , Xiong Jing , He Da‐Wei , Lin Tao , Li Xu‐Liang , Wei Guang‐Hui
Published: February 2009

Di‐(2‐ethylhexyl) Phthalate Upregulates ATF3 Expression and Suppresses Apoptosis in Mouse Genital Tubercle: Xing Liu, et al. Department of Pediatric Urology, Chongqing Children's Hospital, Chongqing Medical University, China

Objectives

To investigate the effect of di‐(2‐ethylhexyl) phthalate (DEHP) on the expression of activating transcription factor 3 (ATF3) and apoptosis of fetal mouse genital tubercle (GT).

Methods

In this developmental toxicity study, pregnant C57BL/6 mice were exposed to corn oil or DEHP (100 or 500 mg/kg/ day) from embryonic day 12 (ED12) to ED16. Apoptosis was characterized by Terminal transferase dUTP nick end labeling (TUNEL) assay. Using RT‐PCR and western blot, the expressions of ATF3 and apoptosis‐related genes (P53, Bcl‐2 and Bax) were investigated.

Results

Apoptosis of fetal mouse GT cells notably decreased after DEHP treatment. DEHP activated ATF3 both at the mRNA and protein levels in GT. Furthermore, pro‐apoptotic P53 was down‐regulated and the ratio of anti‐apoptotic (Bcl‐2)/pro‐apoptotic (Bax) was not significantly changed.

Conclusions

These results suggest that DEHP may induce external genital defects via a mechanism involving apoptosis, which might correlate with the regulation of ATF3 and P53 expressions.
High Temperature Stable Contacts for GaN HEMTs and LEDs
Authors: Pearton S.J. , Voss L.F. , Khanna R. , Lim Wantae , Stafford L. , Ren F. , Dabiran A. , Osinsky A.
Published: February 2009

There is continued interest in developing more stable contacts to a variety of GaN-based devices. In this paper we give two examples of devices that show improved thermal stability when boride, nitride or Ir diffusion barriers are employed in Ohmic contact stacks. AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/X /Ti/Au source/
drain Ohmic (where X is TiB2, ZrN, TiN, TaN or Ir) contacts and subjected to long-term annealing at 350°C. For GaN layers with an electron concentration of ∼3×1017 cm-3, the minimum specific contact resistance achieved is 6×10-5 Ω cm2 for Ti/Al/TiN/Ti/Au after annealing at 800°C. The specific contact resistance was found to strongly depend on the doping level, suggesting that tunneling is the dominant mechanism of current flow. By comparison with companion devices with conventional Ti/Al/Ni/Au Ohmic contacts, the HEMTs with boride-based Ohmic metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C. The gate current for standard HEMTs increases during aging and the standard Ohmic contacts eventually fail by shorting to the gate contact. Similarly, InGaN/GaN multiple quantum well light-emitting diodes (MQW-LEDs) were fabricated with either Ni/Au/TiB2/Ti/Au or Ni/Au/Ir/Au p-Ohmic contacts. Both of these contacts showed superior long-term thermal stability compared to LEDs with conventional Ni/Au contacts.
Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior
Authors: Jain Faquir C. , Gogna Mukesh , Alamoody Fuad , Karmakar Supriya , Suarez Ernesto , Chandy John , Heller Evan
Published: February 2009

This paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.
Characteristics of Inter Poly Dielectric (IPD) Prepared by Plasma Oxidation Treatment of LP-CVD SiO2 Film
Authors: Kim Jung-hwan , Kim Yong-Seok , Jang Byong-Hyun , Namkoong Hyun , Lee Woo-Sung , Leam Hun-Hyoung , Nam Seok-Woo , Kang Chang-Jin , Ahn Tae-Hyuk
Published: February 2009

To improve the IPD reliability of NAND flash memory, plasma oxidation was introduced as the post-treatment process of ONO (Oxide/Nitride/Oxide) IPD. The LP-CVD SiO2 modified by plasma oxidation showed the excellent electrical properties. e.g., low leakage current, high breakdown voltage etc. By the analysis of Tof-SIMS and XRR, we could observe the several changes of physical characteristics such as the reduction of impurities (H, N etc.), the increase of oxide density, and the improvement of oxide surface roughness. We found out the appropriate treatment condition to be able to densify oxide layer without the addition of ONO Equivalent Oxide Thickness (EOT). The LP-CVD SiO2 prepared by plasma oxidation was used for the ONO IPD of 50nm NAND flash device and also compared with the conventional LP-CVD SiO2 in the aspect of the IPD reliability.
Effect of Underlayer in the Growth of Ta2o5 Films Prepared using MOCVD Method for Metal-Insulator-Metal Capacitors in RF-BiCMOS Technology
Authors: Paik Namwoong , Lau Kaman , Rajan Ajita , McDonald Margaret , Sun Hongjiang , America William , Mase Jerry , Bell Nancy , Codi Daniel
Published: February 2009

The properties of Ta2O5 thin films with respect to different underlayer stack have been investigated. At first, a set of samples were produced at various conditions as an underlayer of Ta2O5 film deposition. Then, Ta2O5 films were grown using a MOCVD method with Ta(OC2H5)5 pre-curser at 440 °C. The Process parameters for Ta2O5 films were remained same through the preparation of the sample set. The results were analyzed using various methods including thickness measurement, SEM, stress measurement, X-ray diffraction (XRD), and electrical property measurements. Different grain structures and growth rates were observed with respect to the different underlayer preparation condition mainly as a function of deposition temperature. The deposition rate varied from 0.6 Åsec to 1.8Åsec depend on different underlayer. Crystalline Ta2O5 films with large-grain-size were obtained on Aluminum/TiN underlayer stack. Films with crystalline structure show better leakage current characteristics than the amorphous one.
Effect of In as Surfactant on the Growth of AlN/GaN Distributed Bragg Reflectors by Metal Organic Vapor Phase Epitaxy
Authors: Rodak L E , Korakakis D
Published: February 2009

Nitride based Distributed Bragg Reflectors (DBRs) have several important applications in current nitride based optoelectronic devices. DBRs can be implemented in resonant cavity light emitting diodes (RCLEDs) to improve light extraction and obtain a more directional emission and in vertical cavity surface emitting lasers (VCSELs) to achieve a lower threshold current. Due the large contrast in refractive index, AlN/GaN DRBs are practical for obtaining high reflectivity and wide bandwidth using relatively few periods. Cracking of the samples is typical for AlN/GaN DRBs due to the tensile strain which results from the 2.4% lattice mismatch and to the difference in thermal expansion coefficients. In addition to cracks, v-shaped defects may also arise in the surface due to surface undulation from stored elastic misfit strain or from threading dislocations that result in scattering and diffraction. Several techniques to reduce the number of cracks and defects have been investigated to obtain smooth surface morphology and high reflectivity, e.g. superlattices to reduce the strain or the growth of AlInGaN/GaN DBRs that offer less lattice mismatch but also lower refractive index contrast. In this work, results of the use of Indium (In) as a surfactant in Metal Organic Vapor Phase Epitaxy (MOVPE) will be discussed. This study addresses AlN/GaN DBR structures designed for peak reflectivity around 465 nm. During the AlN layers’ growth, trimethylindium was introduced to the system and resulted in a reduction of surface cracks. Results of growths at In flow rates are reported and discussed.
Detailed Investigation of GaN Metal-Insulator-Semiconductor Structures by Capacitance-voltage and Deep Level Transient Spectroscopy Methods
Authors: Kikawa Junjiroh , Horiuchi Yuki , Shibata Eiji , Kaneko Masamitsu , Otake Hirotaka , Fujishima Tatsuya , Chikamatsu Kentaro , Yamaguchi Atsushi , Nanishi Yasushi
Published: February 2009

Interface states produced at the interface between an insulator and GaN semiconductor determine the performance of GaN metal-insulator-semiconductor (MIS) field effect transistors. Therefore, it is important to know details of interface states characteristics to improve device performances. For above purpose, we have fabricated GaN MIS capacitors, then carried out capacitance-voltage (CV) and deep level transient spectroscopy (DLTS) measurements, and analyzed the obtained results in detail.Wafers used in this study were n-type GaN grown on sapphire substrates by metal organic chemical vapor deposition. A film of SiN was deposited as an insulating layer using electron-cyclotron-resonance plasma-assisted deposition at room temperature, then samples were annealed at 400, 600 or 800°C in N2 atmosphere for 10 min.CV measurements were performed for all the samples at various frequencies and bias sweep rates in the dark condition. CV curves of all the samples exhibited ledges in the curves. Here, ledge indicates a region of which capacitance is independent of applied bias. Although each sample was annealed at each different temperature, it was observed at the same surface potential for all the samples. This result indicates that the Fermi level of the GaN/SiN interface is pinned by a particular trap. In addition, the shape of the CV curve depended on both frequency and bias sweep rate, and it was not observed in the results obtained by a quasi-static capacitance voltage measurement. This can be explained that the shape of ledge is determined by the quasi-equilibrium between a filling rate of traps and a bias sweep rate or test frequency.

In the positive bias region of the ledge, a hysteresis window of the CV curve had some dependence on frequency but little dependence on bias sweep rate. On the other hand, in the negative bias region of the ledge, it had little dependence on frequency but obvious dependence on bias sweep rate. These dependences indicate two different traps and related to the ledge formation. The trap energy level related to the sweep rate dependence is estimated to be 0.34 eV by the temperature dependence of the width of hysteresis window.

Deep level transient spectroscopy measurements were carried out to characterize the trap levels observed in the CV curves. Trap levels with activation energies of 0.32 and 0.78 eV were observed [1]. The former is almost equal to 0.34 eV obtained from the temperature dependence of the width of hysteresis window. The latter is similar to the interface trap reported by Nakano et al., which is considered to be originated from the complexes of Si and surface defect [2].[1] E. Shibata et al., Ext. Abstracts 2008 IMFEDK, Osaka, pp.69-70. (2008).[2] Y. Nakano and T. Jimbo, Appl. Phys. Lett. 80, 4756 (2002).
Characterizations of Boron Carbon Nitride and Boron Carbide Films Synthesized by PECVD
Authors: Wu Qingguo , Sriram Mandyam , Sims Jim , Fu Haiying , Varadarajan Sesha , Archer Tim , Trujillo Nathan J. , Gleason Karen K.
Published: February 2009

Thin films of boron carbon nitride (BCN) and boron carbide (BC) were synthesized by plasma enhanced chemical vapor deposition (PECVD) using two different reactant chemistries: (i) N,N’,N” – trimethylborazine (TMB); (ii) dilute diborane (5% in Ar) and hydrocarbon as precursor materials. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Nano-Indentor, Flexus stress instrument and x-ray photoelectron spectroscopy were used to study the deposited films. The BC films are much more stable than BCN films under high humidity (100%) environment. Both BCN and BC films are very stable under atmospheric conditions. A high compressive stress of -4.2 GPA was achieved by conventional PECVD, which show promising applications in high performance ultra large-scale integrated circuit (ULSI) devices.
Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2gate stacks: A nanoscale conductive-Atomic Force Microscopy C-AFM
Authors: Uppal Hasan Javed , Markevich Vladimir , Volkos Stergios N , Dimoulas Athanasios , Hamilton Bruce , Peaker Anthony R
Published: February 2009

Conductive atomic force microscopy (C–AFM) in ultra high vacuum (UHV) has been used to characterize charge trapping in ultrathin as–deposited oxide films of 2–4 nm (HfO2)x(SiO2)1-x/SiO2multilayer gate stacks. Pre– and post–stress/breakdown (BD) dielectric degradation is analyzed on a nanoscale. A systematic observation probes stress induced trap generation facilitating physical stack BD. Degradation is considered in terms of the pronounced localized leakage contribution through the high–κ and interlayer SiOx. Simultaneous nanoscale current–voltage (I-V) characteristics and C–AFM imaging illlutrates charge trapping/decay from the native or stress induced traps with intrinsic charge lateral propagation. A post–stress/BD constant voltage imaging shows effects of stress bias polarity on the BD induced topography and trap assisted nano–current variations. Physical attributes of deformed artifacts relate strongly to the polarity of electron injection (gate or substrate) so discriminating the trap generation in high–κ and interlayer SiOxrevealing non–homogeneous (dynamic) nature of leakage.
3-D Finite Element Simulation of a Phase-change Random Access Memory Cell with a Self-insulated Structure
Authors: Sun Ke , Feng Wen , Lee Jae Young , Li Biyun , Xie Ya-Hong
Published: February 2009

In this paper, we proposed a phase-change random access memory (PCRAM) cell with a self-insulated structure (SIS), which is expected to have better thermal efficiency than the conventional structures. 3-D finite element simulation is used to study the most power consuming RESET process for both SIS and conventional normal bottom contact (NBC) cells driven by a MOSFET. Instead of programming current, power consumption is investigated to give a more fundamental comparison between the two structures. Thermal proximity effect for both kinds of cells is directly analyzed by simulating a 3×3 device array. The potential slow-quenching issue of SIS is also discussed.
Cathodoluminescence Study of Orientation Patterned GaAs Crystals for Nonlinear Optical Frequency Conversion by Quasi-Phase-Matching
Authors: Angulo Hector , Avella Manuel , Martínez Oscar , Jimenez Juan , Lynch Candace , Bliss David
Published: February 2009

Orientation patterned (OP)-GaAs crystals show promise for use in tunable coherent light sources in the infrared (IR) and terahertz (THz). These structures consist of an alternating array of [001]/[00-1] oriented domains grown by hydride vapor phase epitaxy (HVPE). Material characteristics concerning the propagation losses, the crystal dimensions, and the grating size must be taken into account to implement optical devices for specific wavelength ranges and operating modes (CW or pulsed). The analysis of the main factors contributing to optical loss in the OP crystals is a crucial step toward their use in many promising applications. We present a cathodoluminescence study, where the main defects and their distribution over the OP-GaAs crystals are revealed, with special emphasis paid to the properties of the domain walls.
Strained Quantum Wells for P-channel InGaAs CMOS
Authors: Nagaiah Padmaja , Tokranov Vadim , Yakimov Michael , Oktyabrsky Serge
Published: February 2009

We present experimental results on the effect of strain on hole transport in InGaAs quantum well (QW) structures. Indium content was varied from lattice matched to high compressive stress in InGaAs/InP QW and the transport properties were analyzed at various temperatures (T = 77-300 K) using Hall measurements. The effect of QW thickness (4-20 nm) on hole transport is also presented. The current best results include room temperature mobility and sheet resistance of 390 cm2/V-s and 8500 Ω/sq., respectively. It was observed that the mobility had a T-1.8 dependence indicating similar scattering mechanism in almost all of the samples with prominent mechanism being due to interface and barrier scattering. Further optimization of p-channel for InGaAs CMOS needs to be performed using the above results as guidelines.
Nb-doped TiO2 films for transparent conductive electrodes with low resistivity deposited by dc magnetron sputtering using a TiO2-x–Nb2O5-x target
Authors: Sato Yasushi , Sanno Yuta , Oka Nobuto , Kamiyama Toshihisa , Shigesato Yuzo
Published: February 2009

Nb-doped anatase TiO2 films were deposited on unheated glass by dc magnetron sputtering using a slightly reduced TiO2-x–Nb2O5-x target with oxygen flow ratios [O2/(Ar+O2)] in the range from 0.00 to 0.20%. After post-annealing in a vacuum (6 × 10−4 Pa) at 500 and 600 °C for 1 h, the films were crystallized into the polycrystalline anatase TiO2 structure. The resistivity of the both films decreased to 6.3-6.8 × 10−4 Ω·cm with increasing [O2/(Ar+O2)] to 0.10%, where the carrier density and Hall mobility were 1.9-2.0 × 1021 cm−3 and 4.9-5.0 cm2·V−1·s−1, respectively. The films exhibited high transparency of over 60-70% in the visible region of light.
NH3 Doping in MOCVD Growth of ZnO Thin Films
Authors: Zaidi Tahir , Jamil Muhammad , Melton Andrew , Li Nola , Fenwick William E. , Ferguson Ian T.
Published: February 2009

In this paper effects of NH3 doping on ZnO thin films grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates using diethyl zinc (DEZn) and O2 precursors and N2 as the carrier gas have been studied. NH3 flow rates were varied from 0.1% to 4% in the growth runs. All the runs were done at 500°C at 10 Torr pressure.

The XRD measurements show a single ZnO (002) peak. Raman data for the samples confirms presence of ZnO:N modes at 275cm−1, 510cm−1 and 575 cm−1 and 645cm−1. The PL results for Zn rich films show weak broad peaks centered at 480nm and 650nm with no ZnO band edge emission, while oxygen rich films show weak ZnO band edge emission and a strong broad orange peak centered at 650nm. Hall effect measurements indicate that all of the as-grown films are highly resistive. Some are weakly p-type with carrier concentration of 4.24 × 1014 cm−3 and mobility of 16.55 cm2/Vs. Annealing in N2 ambient for 60 minutes at 800°C enhances the PL band edge emission and converts all the films to highly conducting n-type, with carrier concentration on the order of 8 × 1018 cm−3, mobility on the order of 12 cm2/Vs and resistivity of 0.063 Ω-cm.
Correlation Between Ferroelectric and Fluorescent Properties by Introducing Eu Atoms Into Strontium Bismuth Tantalate Films
Authors: Aizawa Koji , Ohtani Yusuke
Published: February 2009

Electrical and fluorescent properties of Sr-deficient strontium bismuth tantalate co-doped with excess-Bi and Eu atoms (BiEu-SBT) were investigated, in which the Eu/Bi ratio was changed between 0 and 0.1. BiEu-SBT were synthesized on Pt (200 nm)/Ti (50 nm)/SiO2/Si substrates by using Sr0.8Bi2.2Ta2O9 and Sr0.8(Bi2, Eu0.2)Ta2O9 mixed precursor solutions with a concentration of 0.33 mol/kg, in which Sr concentration was fixed at 0.8. From X-ray diffraction analysis, the diffraction peaks from Aurivillius phases were observed in the synthesized BiEu-SBT as well as in pure SBT. In BiEu-SBT, the lattice parameters along a- and c-axes at the Eu/Bi ratio of 0.1 in comparison with those of 0 decreased approximately 0.27 and 0.19 %, respectively. The remnant polarization (2Pr) values of the synthesized BiEu-SBT with Eu/Bi ratio of 0 and 0.1 were approximately 8.4 and 6.8 μC/cm2, respectively. From photoluminescence (PL) measurement at a wavelength of 615 nm as a function of Eu/Bi ratio, the PL intensity of the synthesized BiEu-SBT was proportional to the Eu/Bi ratio, whereas, the 2Pr values were slightly decreased by Eu-doping.
3D Process Integration – Requirements and Challenges
Authors: Wolf Juergen Max , Klumpp Armin , Zoschke Kai , Wieland Robert , Nebrich Lars , Klein Matthias , Oppermann Hermann , Ramm Peter , Ehrmann Oswin , Reichl Herbert
Published: February 2009

Heterogeneous system integration is one of the key topics for future system integration. Scaling of System on Chip (SoC) alone does not address today's requirements of smart electronic systems in terms of performance, functionality, miniaturization, low production cost and time to market.
The traditional microelectronic packaging will more and more convert into complex sys-tem integration. ‘More than Moore’ will be required due to tighter integration of system level components at the package level. This trend leads to advanced System in Package solutions (SiP) which require the synergy and a combination of wafer level and board integration technologies and which are rapidly evolving from a specialty technology used in a narrow set of applications to a high volume technology with wide ranging impact on electronics markets especially due to the high volume and very cost competitive consumer and communication market. Advanced SiP approaches explore the third dimension which results in complex system architectures that also require, beside new technologies and improved materials, adequate system design tools and reli-ability models. One of the most promising technology approaches is 3D packaging which in-volves a set of different integration approaches including stacked packages, silicon interposer with Through Silicon Vias (TSV) and embedding technologies. The paper highlights future sys-tem and potential technical solutions.
3D Integration Using Adhesive, Metal, and Metal/Adhesive as Wafer Bonding Interfaces
Authors: Lu Jian-Qiang , McMahon J. Jay , Gutmann Ronald J.
Published: February 2009

Three-dimensional (3D) integration is an emerging technology that vertically stacks and interconnects multiple materials, technologies and functional components to form highly integrated micro/nano-systems. This paper reviews the materials and technologies for three wafer bonding approaches to 3D integration using adhesive, metal, and metal/adhesive as the bonding interfaces. Similarities and differences in architectural advantages and technology challenges are presented, with recent research advances discussed.
Cu Plating of Through-Si Vias for 3D-Stacked Integrated Circuits
Authors: Radisic Aleksandar , Lühn Ole , Swinnen Bart , Bender Hugo , Drijbooms Chris , Doumen Geert , Kellens Kristof , Ruythooren Wouter , Vereecken Philippe M.
Published: February 2009

Establishing a cost-effective technology for the metallization of through-Si vias (TSV) is an important factor in the realization and volume manufacturing of 3D-stacked integrated circuits (3D-SIC). Cu electroplating, which is the preferred technique, should provide not only a void-free TSV fill, but also short filling time and small overburden. The duration of the plating process is a significant contributor to the overall 3D process cost, and thus needs to be minimized. The overburden, the thickness of the material deposited on the top surface of the wafer, has to be limited for compatibility with the following processing steps (e.g. chemical mechanical polishing, CMP).
In this paper we report on Cu plating of TSV-s with a thin Ta film on the field. The thin Ta film is sputtered on top of the Ta barrier/Cu seed, and inhibits Cu plating outside the TSV-s. We show that the use of this Ta-cap and in situ electrochemical monitoring techniques leads to significant savings in plating and polishing time, and thus savings in manufacturing costs of 3D-stacked integrated circuits.
A Method for Die Thickness Reduction to sub-35 μm
Authors: Thompson Jeffrey , Tepolt Gary , Racz Livia , Rogers Chris , Manno Vincent , White Robert
Published: February 2009

Significant system performance improvements can be realized by stacking die layers. This approach, known as 3-D integration, can reduce RC delay as well as the system form factor. Die are typically thinned in wafer form prior to integration into the modules allowing even greater functional density. However, certain applications require the thinning of individual die. A detailed technique including die lamination, lapping, chemical mechanical planarization (CMP), and release has been developed to thin die to 35 μm thickness. During lamination, the die are temporarily adhered with their active side down to a glass substrate using an adhesive. Mechanical lapping is performed to remove the majority of silicon from the back side. The final thickness of approximately 35 μm is achieved using CMP. The CMP step is critical for the removal of sub-surface damage and prevention of device failure. After thinning, the adhesive is dissolved and the die are handled using porous end effectors. The process can effectively produce die thinned to 35 μm with ± 1.5 μm total thickness variation (TTV).