bluuebunny/crossref_metadata_2025 huggingface dataset:
Pulse Laser Annealing Effects in Si-Implanted GaAs
Authors: Oraby Ahmed H. , Yuba Yoshihiko , Takai Mikio , Gamo Kenji , Namba Susumu
Published: November 2005

The effects of pulsed ruby and Nd:Glass laser irradiation on the electrical properties of Si-mplanted GaAs were investigated to reveal the reason for the lack of activity in low-dose-implanted samples after pulsed-laser annealing. High electrical activity was observed in a sample implanted at a dose of 1015/cm2, while no activity was observed in a sample implanted at a dose of less than 1014/cm2 after the same pulsed laser annealing process. It was found that the ruby laser irradiation of a thermally-annealed sample greatly reduces the carrier concentration and mobility near the surface, while Nd: Glass laser irradiation does not. It is suggested that the surface melting and recrystallization that takes place at a high rate of cooling in pulsed annealing induces defects, giving rise to the lack of activity and low mobility in laser-annealed GaAs.
After-Pulses in a GM-Counter Caused by Radiations from Radioactive Nuclide
Authors: Igarashi Ryuji , Narita Yuichi
Published: November 2005

A method of increasing the counts for a random source in an organic-quenched GM-counter is reported. A large increase in counting rate was observed when the wire-potential was lowered succeeding the occurrence of a Geiger-discharge. A distinct peak in counting rate exists against the variation of the wire-potential. Even under such conditions that the great increase is induced, the counting rate is dependent on the intensity of the incident rays. Negative ions are proposed as being the dominant factor in this phenomenon.
Compensation Effect in Polyene Semiconductors: Implications of Current-Voltage Characteristics
Authors: Sircar A. , Mitra B. , Misra T. N.
Published: November 2005

Current-voltage characteristics in a number of polyene semiconductor manifesting compensation effect have been investigated. Ohmic behaviour has been observed in all these polyenes under the experimental condition in which compensation behavior has been reported. It has been concluded that explanation of the compensation rule in terms of a distribution of traps is unlikely to be of general importance in cases of polyene semiconductors.
LPE Growth of CuGa1-xInxS2 on ZnSe Substrate Using a Mixture of CuGaS2 and CuInS2 as a Solute
Authors: Takenoshita Hiroshi , Nakau Tanehiro
Published: November 2005

Liquid Phase Epitaxial (LPE) growth using (CuGaS2)1-Y
–(CuInS2)
Y
as a solute, ZnSe as a substrate and In as a solvent has been studied by varying Y under the growth conditions of a maximum temperature T
m of 700 and 650°C, and constant cooling rate CR of 0.5°C/min. The over-growth layer is confirmed to be epitaxial CuGa1-x
In
x
S2 by means of EPMA and electron diffraction under the growth conditions of T
m=700°C for all Y and T
m=650°C for Y≦0.7 for T
m=700°C, x is not proportional to Y and is almost constant for low Y. For T
m=650°C, the x-Y relation is similar to that for T
m=700°C, but the In content is higher than that for T
m=700°C. When Y>0.8, the growth rate and Cu content in the overgrowth layer rapidly decrease, where the ternary compound and/or ternary-ternary alloy growth layer could no longer be obtained. Thus, the range of epitaxial growth was Y≦0.7 for T
m=650°C. The above results are discussed and compared with those of our previous reports.
Solid Solution Softening and Solid Solution Hardening in Concentrated KCl–KBr Model Crystals
Authors: Sakamoto Masao
Published: November 2005

The dislocation motion at 0 K overcoming the concentrated solute atoms is calculated by a relaxation method using the string model. The concentration dependence of yield stress τy with Peierls barrier agrees with experimental data, and softening is revealed in c=0.04, where c is the concentration of KBr in KCl. The softening is due to the enhancement of double kink nucleations by solute atoms. Both Cl- and Br- ions are assumed to reveal the size effect against hypothetical anions with the average ionic radius to obtain the interaction force between dislocation and solute atom. For NaCl type lattice without Peierls barrier the equation, τy/µ≃K
s[c(1-c)]
j
[(1+ν)v

ε
/2π(1-ν)b
3]1+i
(µb
2/\varGamma)
i
, where µ is the shear modulus, ν Poisson's ratio, v

ε
the volume difference between solute and solvent atoms, b the Burgers vector, \varGamma the line tension, K
s≃0.87, i≃0.25 and j≃0.64, is derived.
Deflection of Light by Ferroelectric-Ferroelastic RbHSeO4
Authors: Tsukamoto Takeyo
Published: November 2005

Properties of the light deflection due to domains in ferroelectric-ferroelastic RbHSeO4 have been examined.
Above a critical angle of incidence, five deflected beams are observed with a He–Ne laser incidence for both a-cut and b-cut plates of RbHSeO4. Below the critical angle, only two deflected beams appear and the deflection angles at the incident angle of 0° are ±24.3° and ±15.8° for the a-cut and b-cut plates, respectively. The critical angles are equal to the angles of deflection at the incident angle of 0°. The intensity of the deflected beams extends from 1% to 15% of that of the incident one. The incident angle dependence of the deflection one and the polarizing directions of the deflected beams are explained qualitatively on the basis of crystal optics.
Unstable Phase-Conjugate Resonator
Authors: Umegaki Shinsuke , Kurita Atusi , Tanaka Shun-ichi
Published: November 2005

A fundamental Gaussian mode in a phase-conjugate resonator consisting of conventional optical elements and a phase-conjugate mirror constructed by means of degenerate four-wave mixing is analyzed. A ray matrix method is used for the analysis by taking the finite radii of wavefront curvature and the finite beam radii of pump waves into account. It is suggested that the phase-conjugate resonator is generally an unstable resonator.
Trapped Electron Effect on Turbulent Heating by Low Pulsed Electric Field in Tokamak Plasma
Authors: Watanabe Takechiyo , Nagao Akihiro , Nakamura Yukio , Itoh Satoshi
Published: November 2005

The effect of magnetically trapped electrons on the turbulent heating due to a relatively small pulsed electric field is investigated experimentally. Density fluctuations due to low frequency ion acoustic instability and input energy of ions from the turbulent heating increase as the number of trapped electrons decrease. This result is supported with analysis using a dispersion equation which incorporates the contribution of the trapped electrons.
Absorption Rate and Uniformity in a Laser Fusion Pellet
Authors: Sakabe Shuji , Mochizuki Takayasu , Yamanaka Chiyoe
Published: November 2005

The dependences of the absorption rate and distribution of the laser light in spherical symmetric plasmas on the focusing position and wavelength are obtained from calculations by using the ray tracing code. This technique is applied to the computation of the uniformity of the absorbed energy in a laser fusion pellet. The nonuniformity is 8∼21% for 0.35 µm wavelength laser and 15∼30% for 0.53 µm in the case of 6, 8, 12 and 20 beams. It is found that this nonuniformity originates from the overlapping of beams.
Etching Characteristics of n+ Poly-Si and Al Employing a Magnetron Plasma
Authors: Okano Haruo , Horiike Yasuhiro , Yamazaki Takashi , Tokura Tsunemasa
Published: November 2005

Phosphorous doped Poly-Si and Al etching characteristics in and outside a magnetron plasma have been investigated. Although the ion accelerating voltage is very low in a magnetron plasma, both materials with resist mask are etched anisotropically owing to the side wall Protection film which arises from resist sputtered by intense ion bombardments. Outside the plasma, though, some undercutting occurs due to poor protection film caused by an insufficient amount of ions, despite the higher ion energy. Thus, anisotropic etching of the whole wafer is achieved by scanning the magnetron plasma. Magnetic field dependencies for Al and n+ Poly-Si etch rates reveal that Al etch rate due to plasma scanning is not enhanced by the magnetic field, in contrast to the case for n+ Poly-Si.
Resist Pattern Reformation by Reactive Ion Etching with Ar+CH4 Gas Mixture and Its Application
Authors: Watanabe Iwao
Published: November 2005

Resist sputter-etching characteristics and deposited film morphology on a fine pattern are investigated in this paper. An Ar+CH4 gas mixture is adopted as the etching gas to combine the sputter-etching with the hydrocarbon film deposition for the reformation of resist pattern. The resist pattern is reformed in this way with no reduction in the resist pattern width. This method forms a high resistance layer on the resist surface, improving dry etching durability of the resist. This method is then applied to a two-layer resist pattern formation process and it is found that submicron pattern can be easily obtained in two-layer (FBM/PMMA) resist.
A Fast Serial Readout System for Multiwire Propotional Chambers
Authors: Dhawan Satish , Kondo Kunitaka , Takikawa Koji , Yasuoka Kiyoshi
Published: November 2005

The design, construction and performance of a fast serial readout system for multiwire proportional chambers are presented. The system consists of three modules: the amplifier card, the controller, and the word buffer and it has been used successfully in experiments on polarized deep-inelastic electron-proton scattering at SLAC and in experiments on inclusive \varLambda0 production in 12-GeV proton-nucleus interactuons at KEK.
Nuclear Magnetic and Mechanical Relaxations in the γ-Loss Band of Linear Polyethylene Irradiation with γ-Rays
Authors: Anada Yuichi , Kakizaki Maeko , Hideshima Teruo
Published: November 2005

Molecular motion and relaxation processes in the solution-crystallized linear polyethylene irradiated with γ-rays to 100, 200 and 400 Mrad in air are investigated in the temperature range from ca. –170 to –10°C (γ-region) by means of broad-line nuclear magnetic resonance absorption and dynamic mechanical measurements. Of the three relaxations γ1, γ2 and γ3 appearing in this region the γ3-relaxation, attributed to the motion of ciliary chains on the lamellar surface, becomes predominant as the amount of irradiation increases. It is suggested that carboxylic end groups are introduced into the ciliary chains produced by oxidative chain scission, because the values of the NMR second moment in the γ-region agree with those of the HNO3-treated sample.
Preparation and Electrical Properties of An Amorphous SiC/Crystalline Si P+n Heterostructure
Authors: Rahman Mohammad Mahmudur , Furukawa Seijiro
Published: November 2005

An amorphous SiC/crystalline Si heterostructure has been fabricated and its electrical properties investigated. The amorphous film was prepared in an inductive-coupled plasma chemical vapor deposition system, and its properties studied for the first time. X-ray diffraction pattern studies revealed that films do not grow epitaxially at a deposition substrate temperature of 450°C and that they are amorphous in nature. An amorphous p+SiC/crystalline n-Si heterostructure showed good rectifying properties. Temperature measurements indicate that the current is dominated by the injection component at higher temperatures and by tunneling and recombination at lower temperatures. The electron affinity of the doped a-SiC film was estimated to be 3.24 eV. A possible energy band diagram is presented in this paper.
Potential Energy of a Gold Atom Adsorbed on Stepped Surface of Sodium Chloride Crystal
Authors: Yanagihara Takashi , Yamaguchi Hiroyuki
Published: November 2005

The potential energy of an isolated gold atom on a stepped NaCl (1 0 11) surface is calculated by using dispersion, electrostatic and repulsive potentials. The calculation is performed by summation over nearly 800 neighbour ions, taking into account the effect of substrate surface ion relaxations due to the presence of the straight single high step. The potential energy obtained has a pair of minimum values (-1.16 eV) in the vicinity of each sodium ion site on the lower terrace along a step line. The result is used to examine the surface diffusion of an adatom in the vicinity of stepped surfaces.
Na+ and Li+ NASICON Superionic Conductors Thick Films
Authors: Perthuis H. , Velasco G. , Colomban Ph.
Published: November 2005

For microionic applications, superionic conductors have been elaborated in the form of thick films, using silk-screen printable powders. Na3Zr2Si2PO12, Na3.1Zr1.55Si2.3P0.7O11 and Li0.8Zr1.8Ta0.2(PO4)3 compositions are synthesized by a sol-gel process involving hydrolysis-polycondensation reactions of metal-organic alcoholic solutions. A thermal treatment (600°C–800°C) allows to obtain very fine particles (<1 µm) with the pure NASICON phase. Inks are prepared with these powders, an organic binder, volatile fluidifying agents and mineralizers. The layers, about 50 µm in thickness, are achieved by successive deposits and sinterings (950°C–1050°C) onto alumina substrates. Films conductivity is determined by the complex impedance method. Values measured at 300°C (Na+: σ∼10-2 Ω-1cm-1, E

A
=0.25 eV, Li+: σ∼5 10-4 Ω-1cm-1, E

A
=0.5 eV) reach those obtained with well-densified ceramics. An anisotropic behaviour related to microstructure is pointed out.
Static SIMS Investigation of Ag-Supported Amino Acids
Authors: Tamaki Shozo , Sichtermann Willy , Benninghoven Alfred
Published: November 2005

The static mode of secondary-ion mass-spectroscopy (static SIMS) was used to investigate Ag-supported amino acids, the amount of amino acids on the Ag surface being systematically controlled. It is shown in this report that a mono-molecular layer (full coverage θ=1) is produced at a surface concentration of about 5×1014 molecule/cm2. The possibility of the quantitative detection of amino acids with static SIMS for θ<1 is also demonstrated. The fact that the ratio (M-COOH)+/(M+H)+ from a mixture of two amino acids remains constant as the mixture ratio varies indicates that these ions are formed from amino acids in the same bonding state on the surface. The absolute probability of formation of these ions is, however, strongly affected by the presence of another amino acid coexisting on the surface. The secondary (M+H)+ and (M-COOH)+ ion intensities are used to calculate the absolute ion yields for 15 amino acids and most of these yields are found to be larger than 10-19.
Mechanisms of Charge Build-up on a Polymer Particle by Repeated Impact
Authors: Masui Noriaki , Murata Yuji
Published: November 2005

The dependence of the impact charge of a polymer particle on the charge previously deposited on it (pre-charge) was studied at impact speed v=9.04 m/s∼20.3 m/s
a
n
d
i
m
p
a
c
t
a
n
g
l
e θ=50^°∼60°. The impact charge of a particle decreased almost linearly with increase in the pre-charge. Observation of the optical density of the impact area made visible using electrophotographic liquid developer showed that this phenomenon was caused by the decrease in the charge density on the impact area. The electric field due to the pre-charge was thought to restrict the generation of new charge. This inference was confirmed by an experiment using a polyethylene sheet.
Voltage-Current Characteristic in Lead-Zinc-Lead Junctions
Authors: Nagata Shoichi
Published: November 2005

A systematic investigation of the d
c-Josephson effect has been carried out on lead-zinc-lead (superconductor-normal metal-superconductor) junctions with special emphasis on their behavior in a magnetic field. The d
c voltage-current (V-I) characteristics can be described by a resistively-shunted junction model for all the fields measured. The V-I curves can be characterized qualitatively by V=R
N(I
2-I
c
2)1/2 where R
N is the normal-state resistance and I
c is now the critical current in a magnetic field or in zero field. The magnetic field reduces the critical current I
c. An anomalous re-entrant characteristic in the V-I curves, which we call the switchback effect, has been observed. This switchback effect may originate from imperfections in the sample. Typical results are presented here.
Simultaneous Output- and Frequency-Stabilization and Single-Frequency Operation of an Internal-Mirror He–Ne Laser by Controlling the Discharge Current
Authors: Sasaki Akira , Ushimaru Shinji , Hayashi Takao
Published: November 2005

This paper describes a new, simple method for obtaining the output- and frequency-stabilized single mode output of an internal-mirror He–Ne laser (λ=633 nm). The total back-beam intensity is detected with a silicon photodiode and the photodiode current is converted into a voltage signal. A voltage proportional to the difference between the voltage signal and a stable dc reference voltage is applied to a laser discharge current regulation circuit which controls the change in the laser tube length due to thermal contraction. As a result, the laser output power and frequency are stabilized at the same time. A relative output stability of ±0.12% and a relative frequency stability of ±4×10-9 were obtained over a period of 10 minutes or longer.
Gamma-Ray Induced Absorption Band at 770 nm in Pure Silica Core Optical Fibers
Authors: Nagasawa Kaya , Tanabe Manabu , Yahagi Kichinosuke , Iino Akira , Kuroha Toshiaki
Published: November 2005

The effects of the drawing conditions, OH content and irradiation temperature on radiation-induced optical absorption bands in step-index fibers with pure silica cores clad with silicone or F-doped silica have been investigated. A loss peak was induced at 770 nm in silicone-clad fibers with both low and high OH-content silica cores, but the loss peak occurred at 630 nm in F-doped silica-clad fibers under γ-ray irradiation. The drawing conditions affected the growth of the loss peak in both silicone-clad and F-doped silica-clad fibers. The 770 nm band decreased under γ-ray irradiation exceeding 100 Gy at room temperature but did not decrease at 77 K. Radiation hardening was produced in the 770 nm band by γ-ray irradiation at room temperature or by room temperature annealing after irradiation at 77 K. The loss peaks at 770 nm and 630 nm in the two kinds of fiber are discussed in relation to the differences in the cladding materials.
Dynamical Aspects of Pulsed Laser Annealing of Ion-Implanted Silicon
Authors: Kanemitsu Yoshihiko , Okamoto Kazuya , Kuroda Hiroto , Shionoya Shigeo
Published: November 2005

The transient reflectivity of ion-implanted silicon during picosecond and nanosecond pulsed laser annealing was measured by using probe light of various wavelengths. The threshold and energy range for annealing were found to be determined by the incident energy density (J/cm2) on the surface but not by the power density (W/cm2), and were independent of whether picosecond or nanosecond pulses were used. The characteristics of picosecond pulsed laser annealing were similar to those of nanosecond pulsed laser annealing. No differences in the duration of the enhanced reflectivity at various probe wavelengths were observed, and the enhanced reflectivity had the same value of ∼70%. The experimental results obtained are consistent with calculations based on the surface melting model. It is pointed out that the plasma model cannot explain the experimental results.
Picosecond Dynamics of Pulsed Laser Annealing of Ion-Implanted Silicon
Authors: Kanemitsu Yoshihiko , Kuroda Hiroto , Shionoya Shigeo
Published: November 2005

The temporal changes in the reflectivity of ion-implanted silicon during picosecond pulsed laser annealing were measured with a single laser shot by using a streak camera. The rise times to the enhanced reflectivity of ∼70% were found to be 300 ps and 100 ps under 1.06 µm and 532 nm excitation, respectively, at an incident energy density just above the melting threshold. The rise time decreased with increase in incident energy density. Under 1.06 µm excitation, phonon emission took place as a result of the Auger recombination of carriers, and the melt-front velocity was smaller than that under 532 nm excitation. These factors are considered to be responsible for the difference observed between the two kinds of excitation. At higher incident energy densities, the overheating of liquid silicon was found to occur.
CW Laser Annealing of InP
Authors: Mizuta M. , Merz J. L.
Published: November 2005

CW Ar+ laser annealing is used to activate semi-insulating InP after ion-implantation with Se. Electrical activation has been measured for a wide range of implant doses (3×1012–5×1015 cm-2) using a phosphosilicate glass cap during laser annealing. The dependence of the resulting electrical properties on laser power and scan speed are investigated in terms of surface decomposition and slip line formation. Successive anodic oxidation coupled with Hall measurements has demonstrated that there is no impurity redistribution during CW laser annealing.
A Study of the Properties of a Magnetically-Insulated Ion Diode
Authors: Nakagawa Yoshiro
Published: November 2005

The diode mechanism was studied in a magnetically-insulated ion diode producing a proton beam of 7 kA total current with high efficiency (∼40%), having an ion current density exceeding the Child-Langmuir current by a factor of more than 50 and long pulse insulation of the gap (∼850 ns). It was found that electrons in the gap move azimuthally in theEz×Br, direction under the balance of radial forces. Optimization of the azimuthal drift length (∼60 mm) and the uniformity of the anode plasma is possible if the shape of the insulating magnetic field is changed. The ion production efficiency is mainly determined by this length. The ion beam divergence of 1°∼4° is thought to be caused by cathode plasma filamentation and ion space charge in the drift region. It is shown that when titanium hydride is used as the anode material, electron bombardment plays an important role in the anode plasma production.
Optical Study of Electromagnetic Surface Modes in Microcrystals
Authors: Hayashi Shinji
Published: November 2005

This paper discusses the fundamental aspects of theories describing the electromagnetic surface modes in microcorystals and their optical response. The relationships between the theories are emphasized, and three characteristics of the surface modes are summarized. Observed infrared spectra of MgO microcrystals and Raman spectra of GaP microcrystals are presented to illustrate how the surface phonon modes can be identified experimentally. The effect of surface plasmon resonance in an Ag-island film on the absorption and Raman scattering of a copper phthalocyanine (dye) coating is also discussed. Comments are also made on the extension of surface mode spectroscopy and related topics.
Preparation of a Quasi-One-Dimensional Nb3S4 Single Crystal
Authors: Nakada Ichiroh , Ishihara Yutaka
Published: November 2005

Single crystals of Nb3S4 were grown by chemical vapour transport in a quartz ampoule at 1000°C with iodine as the transport agent. Within three to four weeks, a batch of tiny needle-like or feather-like crystals was usually found to grow. However, sometimes sizable single crystals measuring 1×1×5 mm3 were found among them. The crystals were characterized by optical microscopy and X-ray topography. The method of preparation needs further improvement, as the crystals appear to include many imperfections. However, the crystals prepared up to now are of sufficiently high quality for use in solid-state studies.
Remarks on Solutions of Diffusion Equation Including Gravitational Field
Authors: Etori Kanji
Published: November 2005

The diffusion equation for the number density of particles in a gravitational field is solved by taking an integral transform. We consider the response given by a constant input density at the boundary surface and that given by a source density which varies sinusoidally with time. In order to obtain the sinusoidal response, the boundary condition of absorption or reflection in a finite region is applied at the other side.
These solutions, obtained as the transient responses of the diffusing particle density, show some shifts due to the gravitational field when compared with the conventional forms.
Molecular Species in Orthorhombic Selenium
Authors: Nagata Kiyofumi , Miyamoto Yasuhiko
Published: November 2005

The Raman and infrared spectra of orthorhombic selenium were measured. The spectra are not explained by any structural models assuming the presence of hitherto-known molecules, that is, polymeric chains, Se6 rings, and Se8 rings. This suggests that orthorhombic selenium consists of unknown molecular species. This is supported by the experimental result that only the orthorhombic form can be recrystallized from a solution of orthorhombic selenium in carbon disulfide. The probability of the existence of Se7 ring molecules in orthorhombic selenium is discussed.
Poloidal Magnetic Field of an Iron-Cored Tokamak
Authors: Sometani Taro , Suzuki Norio , Fujisawa Noboru
Published: November 2005

The poloidal magnetic field is measured on the remodelled JFT-2 apparatus. The measured field agrees well with the field calculated by a relatively simple method proposed by one of the authors. A combination of poloidal field coils is discussed which can effectively produce the vertical field required to maintain a plasma current.
Proposed High-Resolution Vertex Detector Using Superconductive Thin Strips
Authors: Ishihara Nobuhiro , Arai Ryoji , Kohriki Takashi , Ujiie Norihiko
Published: November 2005

The possibility of fabricating a superconductive vertex detector is discussed on the basis of a preliminary experiment. The experiment has shown that an indium strip 15 mm long, 20 µm wide and 0.1 µm thick is changed from the superconductive state to the normal state when struck by a single 5.4 MeV alpha particle.
Residual Voltage in Low-Density Polyethylene Film Containing Antioxidant
Authors: Yamanaka Sanshiro , Fukuda Tadashi , Sawa Goro , Ieda Masayuki
Published: November 2005

A polarity effect of the residual voltage was found on applying a high bias voltage of more than 1000 V to a 30 µm-thick low-density polyethylene film containing antioxidant. It is shown in this report from ESCA data and surface treatment that the antioxidant bleeds out onto the outer surface when films in the form of two laminated layers are stored. The injected space charges are also estimated from the isothermal depolarization current and TSC measurements under a collecting voltage. It is further demonstrated that the polarity effect can be consistently understood by assuming that the lowering of the blocking barrier by the antioxidant bled out to the surface is more effective in the discharging process than in the charging process.
Electrochromism of Atmospheric Evaporated Tungsten Oxide Films (AETOF)
Authors: Morita Hiroshi , Washida Hiroshi
Published: November 2005

The electrochromic response of tungsten oxide films deposited in a pure oxygen atmosphere was found to show the best value at an O/W ratio of 2.5. When argon was introduced into the atmosphere, the response became faster, as the total pressure increased. However, the best response values, for films deposited in an atmosphere containing oxygen, were usually attained at a fixed partial pressure of oxygen. The factors determining the electrochromic response in a cell utilizing atmospheric evaporated tungsten oxide films (AETOF) were analyzed, and the dependence of the film formation conditions on these factors was investigated.
Improved Drop Ejection Characteristics through Use of Micro-Valves in Ink Jet Head
Authors: Suga Michihisa , Tsuzuki Mitsuo
Published: November 2005

A new pressure-pulsed ink jet head with two micro-valves has been developed. This ink head gives a wide frequency response and produces little fluctuation in the velocity of the ink droplets.
Drop ejection has been analyzed theoretically using a physical model, including meniscus motion in a nozzle, pressure generation by a piezoelectric transducer, and micro-valve operation. It is found that damped oscillation in the ink flow is produced by both the elastic energy of the piezoelectric transducer and the surface tension of the nozzle meniscus. This oscillation causes a deterioration in the characteristics of drop velocity versus operational frequency. However, the microvalves described here make it possible to prevent this damped oscillation, as well as to eliminate the capillarity dependency of the ink supply.
Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or Ethylene
Authors: Fujimoto Fuminori , Ootuka Akio , Komaki Ken-ichiro , Iwata Yasushi , Yamane Isao , Yamashita Hiroshi , Hashimoto Yoshio , Tawada Yoshihisa , Nishimura Kunio , Okamoto Hiroaki , Hamakawa Yoshihiro
Published: November 2005

The hydrogen content in a-SiC:H films prepared by the plasma decomposition of gas mixtures of silane and methane or ethylene was measured by 1H(15N, αγ)12C nuclear reaction (NR) and infrared absorption spectroscopy (IR). The contents observed by both methods can be made to agree well for most of the films by putting the average value of the inverse absorption cross section for the CH
n
(n=1, 2 and 3) stretching mode over all values of n as A
s=1.0×1021 cm-2. In some films prepared from silane and ethylene mixtures, the hydrogen content given by NR was higher than that by IR. Hydrogen release from films with a hydrogen content of over 30 atm.% was observed during NR analysis. The mechanism of the hydrogen release is discussed by comparing the IR spectra before and after ion bombardment.
Subsolidus Phase Equilibrium Study of the Ternary Systems Li2O–Nd2O3–GeO2 and –SiO2
Authors: Ikeda Takuro , Sato Hidetaka
Published: November 2005

Subsolidus phase equilibria have been investigated in the ternary systems LiO0.5–NdO1.5–GeO2 (L-N-G) and –SiO2 (L-N-S). Various ternary compounds were found: 13/1/4 (γ), 3/1/1 (ε), 1/9/6 (β) and 10/5/6 (α, incongruent) in L-N-G, and 13/1/4 (δS) and βS s.s. (between 1/9/6 (βS) and 0/4/3 (β'S)) in L-N-S. The solid-state reactions of some of these compounds were examined as well as those of the related binary compounds, especially 3/4 (σ) and (probably) 3/5 (τ) in the LiO0.5–GeO2 system. Appreciable fluorescence activity was detected in γ in L-N-G.
Temperature Dependence of Morphology and Growth Mechanism of Vapor-Grown Cd crystals as Affected by Bi Impurities
Authors: Yumoto Hisami , Hasiguti Ryukiti R.
Published: November 2005

Hexagonal prismatic Cd crystals having {101̄0} prismatic planes, or occasionally having {112̄0} prismatic planes, were grown as high-temperature-type Cd crystals by the thin layer VLS mechanism at T
s, (growth temperature) ≥ T
t (transition temperature range: 250–260°C). Pencil-shaped Cd crystals (low-temperature-type Cd crystals) were grown, having {101̄0} and {112̄0} prismatic planes and {101̄1} pyramidal planes by the mixed-type VLS mechanism at T
s≤T
t. When the growth temperature was decreased below T
t, the shape of the solid-liquid interface changed from rounded to faceted. Three processes for the termination of the mixed-type VLS growth are proposed.
Electrical Properties of a Quasi-One-Dimensional Nb3Te4 Single Crystal
Authors: Ishihara Yutaka , Nakada Ichiroh
Published: November 2005

The electrical resistance and thermoelectric power of Nb3Te4 were measured along the quasi-one-dimensional c-axis. Below about 100 K, the resistivity follows the form T2.2, suggesting the electron-electron Umklapp process for charge carrier scattering. Around 38 K, there is a resistivity swelling which would be related to the charge-density-wave phase transition. Anomalies in the thermopower are observed below 150 K. The transition temperature to superconductivity is 2.3 K, and the upper critical magnetic field for type-II superconductivity versus temperature is linear in the temperature range 2.3∼2.0 K. The coherence lengths at 0 K parallel and perpendicular to the c-axis are estimated as 750 Å and 69 Å, respectively. The effective mass ratio perpendicular and parallel to the c-axis at 2.0 K is 115±10, which indicates that this material is strongly anisotropic.
Optical Quenching of Photocurrent in KTaO3 Doped with Fe
Authors: Yamaichi Eiji , Akishige Yukikuni , Ohi Kikuo
Published: November 2005

Optical quenching of the photocurrent in KTaO3 doped with iron has been investigated. Three peaks in the quenching spectra occur at about 440 nm, 520 nm and 600 nm. The optical quenching bands are ascribed to hole excitation from Fe4+ and Fe5+ in Ta sites to the valence band. The optical quenching decreases with increasing temperature and is not observed above 180 K. The results are explained by a two-center model.
Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
Authors: Tarucha Seigo , Kobayashi Hideki , Horikoshi Yoshiji , Okamoto Hiroshi
Published: November 2005

Recombination radiation below the lowest confined particle transition energy observed in GaAs/AlGaAs multi-quantum-well heterostructure lasers was studied in comparison with that in conventional GaAs double-heterostructure lasers. The spontaneous emission shows lower-energy-side broadening in proportion to the 1/2.6 power of the injected carrier density for both the MQW structures and the conventional DHs. This carrier density dependence suggests that the observed low-energy-side broadening of the spontaneous emission is due to carrier-induced energy-gap shrinkage. The energy gap shrinkage in the MQW structures is considered theoretically by modifying the well-known bulk theory for gap shrinkage and taking the effective mass anisotropy into account. This theory is found to account satisfactorily for the observed lower-energy-side broadening. The results suggests that lasing below the lowest confined particle transition energy in MQW laser diodes is due to gap shrinkage rather than to LO-phonon participation as reported by other workers.
Theoretical Analysis of Rb and Cs D2 Lines in Saturation Spectroscopy with Optical Pumping
Authors: Nakayama Shigeru
Published: November 2005

The relative intensities of the Doppler-free signals of 85Rb and Cs D2 lines in saturation spectroscopy were calculated theoretically, taking into account the optical pumping process in a four-level system. The optical pumping effect in saturation spectroscopy is important when atoms with long-lived lower states are pumped by a weak beam. The theoretical results calculated from a simple analysis without any knowledge of the saturation parameters were found to be in good agreement with the experimental results on Rb and Cs D2 lines previously obtained using semiconductor laser.
Scaled LOCOS Processes with Reduced Narrow Width Effects
Authors: Baglee David A. , Smayling Michael C. , Duane Michael P. , Itoh Mamoru
Published: November 2005

Scaling of MOS circuits is resulting in transistors exhibiting increased narrow width effects in addition to the usual short channel poblems. In this paper we present a technique for reducing these narrow width effects by using HIPOX to grow the isolation oxide. HIPOX allows us to reduce the channel stop dose, hence reducing moat encroachment, while at the same time maintaining adequate isolation between devices. Data is presented on moat encroachment, thick field transistors and moat diodes as well as a discussion of simulation results. The relationship and trade offs between each of these is examined.
Study of ICRF Wave Propagation and Absorption in INTOR Tokamak Plasma
Authors: Itoh Kimitaka , Itoh Sanae I. , Fukuyama Atsushi
Published: November 2005

The propagation and absorption structures of ICRF (ion cyclotron range of frequencies) waves in the INTOR Tokamak plasma are investigated. The kinetic wave equation is solved for a deuterium-tritium plasma by employing a one-dimensional model equilibrium of the tokamak plasma. The wave is assumed to be excited by the poloidal antenna current in the low-field side. The accessibility of the ICRF wave, its energy deposition profile, the partition of absorbed energy between plasma species, and the antenna-plasma coupling are studied. The dependence of the energy absorption rate on the plasma parameters and the antenna location are examined.
A Test of Lead Glass Shower Counters
Authors: Ogawa Kazuo , Sugahara Ryuhei , Takahashi Kasuke , Takasaki Fumihiko , Tauchi Toshiaki , Awaji Naoki , Hayashii Hisaki , Iwata Seigi , Ozaki Hitoshi , Suzuki Shiro , Gearhart Roger , Miyamoto Akiya , Shimomura Toshiro
Published: November 2005

In order to design an electromagnetic shower calorimeter for the TRISTAN experiment, lead glass shower counters made of SF6 were tested with positron beams in Beam Line 19 at SLAC. The beam energy ranged over 2–17.5 GeV, and the energy resolution and beam position dependence of the pulse height were studied for lead glass blocks of various length. The effect of the light guide on the pulse height was clearly observed when the shower leaked into the glass light guide. The effect of the absorber, the wedge-shaped lead glass and a mesh-type photomultiplier were also tested.
Near-Resonant Rayleigh Scattering Method for Measurements of Alkali Atomic Density in Combustion Gas Plasmas
Authors: Watanabe Yukio , Ikegami Tomoaki , Nishiyama Toshio , Akazaki Masanori
Published: November 2005

This paper reports the development of a non-intrusive, space-resolved method for density measurements of alkali atoms in combustion gas plasmas. A sodium density of over 1014 cm-3 in an air-acetylene flame was measured using a near-resonant Rayleigh scattering (NRRS) method, in which the wavelength of the incident laser was detuned from the resonance line of the sodium atoms in order to avoid reabsorption of the scattered signal light. The results agree fairly well with those obtained by the spectral absorption method and the Na reference cell method. The results show that the NRRS method described here can also be used to measure atomic densities of the order of 1016 cm-3, typical values in an open-cycle MHD power-generation plasma.
Observation of Surface Micro-Structures by Micro-Probe Reflection High-Energy Electron Diffraction
Authors: Ichikawa Masakazu , Doi Takahisa , Ichihashi Mikio , Hayakawa Kazunobu
Published: November 2005

A new micro-probe reflection high-energy electron diffraction technique has been developed for observing micro-structures on crystal surfaces. In this technique, an electron beam of diameter 20 nm at a beam current of 8 nA and a beam angular divergence of 2 mrad has been achieved by using a field emission gun, making it possible to obtain bright, sharp diffraction patterns from surface micro-areas. A diffraction spot on a fluorescent screen is focused on an apperture by an optical lens; and part of the intensity is used as a signal to produce a scanning electron microscope image. This image is very sensitive to changes in surface crystallographic orientation, and can show areas in which the orientation change is of the order of 0.1 mrad. When the technique was used to observe Si(111) surfaces and metal-deposited Si(111) surfaces, image contrasts caused by screw dislocations, atomic steps and domain structures on the surfaces were obtained.
Construction of a Telefocus Gun for Gas Electron Diffraction Experiments
Authors: Taguchi Masami , Iijima Takao
Published: November 2005

A Steigerwald-type telefocus gun was constructed and the optimum design of the electrodes was determined by examining the relation between the design parameters and the characteristics of the electron beam. By the use of a pointed filament of rhenium welded onto a tungsten hairpin filament, a beam cross-section of 0.7 mm in diameter and a beam current of up to 45 µA at a focal length of 600 mm were attained. The current density distribution in the least cross-section of the beam was also examined.
Durability of Mechanical Damage Gettering Effect in Si Wafers
Authors: Sawada Renshi
Published: November 2005

This paper reports an investigation of the durability of the mechanical damage gettering effect in Si wafers through a 3-step thermal treatment consisting of an 8-hour annealing step between two oxidation steps. The gettering durability in Si wafers with scribe damage on the back surface and with straight dislocations introduced in the neutral plane was examined in relation to the macroscopic strain field, which appears as wafer warpage, and the microscopic strain field, which is present in the vicinity of damage, even after the macroscopic strain was reduced by thermal treatment. When the scribe damage was deep, good durability was obtained, and there was no difference between the gettering effects during the first and second oxidation steps. The macroscopic strain gradient had little effect in promoting gettering. The extent of the gettered range was found to be dominated mainly by microscopic strain and to depend upon the morphology of dislocations.
Some Design Considerations for Multi-Quantum-Well Lasers
Authors: Kroemer Herbert , Okamoto Hiroshi
Published: November 2005

This paper addresses itself to two different problems in the design of multi-quantum-well (MQW) lasers: (a) The problem of inter-well coupling by electron tunneling is investigated, and it is shown that the tunneling can be made sufficiently strong to permit efficient electron equilibration between wells, without destroying the advantages of the step-like distribution of states of a single well or of fully decoupled wells. (b) A modification of the quantum well array itself is proposed, in which additional narrower quantum wells are added outside the lasing well array itself. These subsidiary welts contain only a negligible concentration of electrons and hence do not participate in the laser action, but they should improve the quality of the epitaxial growth, and assist in both the electron capture and the optical confinement.
Quasi-Instantaneous Measurements of Titanium Compounds Using Auger Electron and Auger Electron Appearance Potential Spectroscopies
Authors: Konishi Ryōsuke , Kato Susumu
Published: November 2005

The Auger electron and Auger electron appearance potential spectra of Ti, TiC
x
, TiN
x
and TiO2 were observed quasi-in-stantaneously, and the energy shift values for the L
3
M
2,3
M
4,5 Auger peak were found to be 1.5 eV, 4.6 eV and 5.3 eV for TiC
x
, TiN
x
and TiO2, respectively. These values correspond to the energy separation between band (2e
g→2p
3/2) and band (2t
2g→2p
3/2) in XES (X-ray emission spectra) for TiN or the absorption edge in SXAS (soft X-ray absorption spectra) for TiC and TiO2.
The threshold values of the L
3 AEAP spectra in titanium compounds show good agreement with the energy position of the L
3-absorption edge in SXAS. The energy separation between the main peak and the shoulder peak at high energy for TiN
x
and TiO2 in AEAP spectra corresponds to that of empty states in SXAS.
Characteristics of High-Tc Nb3Ge Films Prepared by Chemical Vapor Deposition
Authors: Suzuki Mitsumasa , Ōuchi Hirobumi , Anayama Takeshi
Published: November 2005

The properties of Nb–Ge films prepared by chemical vapor deposition have been studied in order to clarify the characteristics of high-T
cNb3Ge. The effects of the deposition temperature and film composition on the transition temperature, residual resistance ratio, residual resistivity, A15 lattice parameter and growth of the A15 and non-A15 phases are described. The characteristics of the high-T
c phase are discussed in terms of correlations between the transition temperature, A15 lattice parameter and film composition. For films with transition temperatures around 20 K, the A15 lattice parameter is ∼5.140 Å, and the film composition (Nb/Ge ratio) falls in the range 2.5–3.0. Micrographs of some films, taken by scanning electron microscopy, reveal that the growth morphology of films changes markedly as the deposition temperature varies from 750 to 900°C.
A Novel Discrete Current Behavior in the Current-Voltage Curve for Superconducting BaPb0.7Bi0.3O3 Films
Authors: Moriwaki Kazuyuki , Suzuki Minoru , Murakami Toshiaki
Published: November 2005

A novel discrete-valued current characteristic has been found in I-V curves for several superconducting BaPb0.7Bi0.3O3 films with 2-dimensional Josephson-junction arrays. The current steps are quite regular. In addition, the experimental results indicate a relation between the current step value and the superconducting energy gap voltage.
Accurate Wavelength Measurements of the Absorption Lines in H2O Vapor by a 0.8 µm AlGaAs Laser
Authors: Fukuoka Kazuo , Ohtsu Motoichi , Tako Toshiharu
Published: November 2005

The first results of accurate measurements of vacuum wavelengths of six spectral lines of a (2, 1, 1) vibration band in H2O were presented using a 0.8 µm AlGaAs laser. For these measurements, the technique known as the coincidence method was employed using a stabilized He–Ne laser as a wavelength standard. Accidental error was kept between 1.7×10-7and 5.5×10-8. Systematic error was estimated as being 2.0×10-8.
Electrical Properties of Indium- Tin-Oxide Single Crystals
Authors: Kanai Yasuo
Published: November 2005

Indium-tin-oxide single crystals with 0–9 atomic% of Sn/In are produced by flux method, and their electrical properties are measured. At about 2 atomic% of Sn/In, the resistivity is 2×10-4 Ω-cm and the electron concentration is 3×1020/cm3 at room temperature. Further increase of Sn/In ratio does not change the electrical properties. The electron concentration is about 1/2–1/10 of the numbers of Sn atoms in the crystals. The value of electron mobility is about 100 cm2/V.s and independent with the atomic ratio of Sn/In. This value is about 5 times larger than the calculated one assuming the ionized impurity scattering in degenerate semiconductor.
Defects Produced in Germanium by Quenching and Electron Irradiation
Authors: Kamiura Yoichi , Hashimoto Fumio , Yoneyama Shin-ichiro , Fukuoka Noboru
Published: November 2005

Irradiation with 1.5 MeV electrons slightly below room temperature induced the transformation of about half (≃1.7×1014 cm-3) of quenched-in shallow acceptors (SA2) at E
v+13 meV into more shallow acceptors at E
v+9 meV. These new acceptors returned to the SA2 acceptors after annealing around 300°C. The irradiation also caused a decrease (≃4×1014 cm-3) in substitutional-copper density. Part of the annihilated copper atoms reappeared after annealing around 300°C, suggesting that various defect complexes involving copper were formed by the irradiation.
Hydrogenated Amorphous Silicon Produced by Pyrolysis of Disilane in a Hot Wall Reactor
Authors: Ashida Yoshinori , Mishima Yasuyoshi , Hirose Masataka , Osaka Yukio , Kojima Kenichi
Published: November 2005

Deposition kinetics and physical properties of hydrogenated amorphous silicon produced by low-pressure chemical vapor deposition of disilane have been investigated as a function of substrate temperature using a hot wall type reactor. The high growth rate of more than 8 A/sec has been achieved at a substrate temperature of 450°C and the hydrogen content is about 9 at.%. The optical bandgap never exceeds 1.6 eV even for a hydrogen content of 18 at.% and the spin density is as low as ∼1016 cm-3.
A Proposal of Single Quantum Well Transistor (SQWT) –Self-Consistent Calculations of 2D Electrons in a Quantum Well with External Voltage
Authors: Hamaguchi Chihiro , Miyatsuji Kazuo , Hihara Hiroki
Published: November 2005

New devices are proposed with an operation principle based on the wave function control of two dimensional electron gas in a single quantum well composed of double heterostructures, for example, AlGaAs/GaAs/AlGaAs. Self-consistent calculations indicate that the current channel of the two dimensional electrons can be easily confined in one of the heterojunction surfaces by applying an external voltage. We show that the mechanism has the capability of fabricating high speed logic devices.
Raman Scattering in InGaAsP Lattice-Matched to GaAs
Authors: Inoshita Takeshi , Usui Akira
Published: November 2005

We report the first investigation of the lattice dynamics of In1-x
Ga
x
As
y
P1-y
quaternary semiconductor alloys lattice-matched to GaAs by Raman scattering. The spectra in the optical-phonon frequency range consist of two separate asymmetric bands, each having a peak at the high frequency end. These two peaks are shown to be GaP-like and GaAs-like, respectively. These, together with weak additional structures, are discussed in terms of a cell-isodisplacement theory.