bluuebunny/crossref_metadata_2025 huggingface dataset:
Przeniesienie siedziby polskiej spółki kapitałowej za granicę jako przyczyna jej rozwiązania w świetle Kodeksu spółek handlowych i swobody przedsiębiorczości
Authors: Napierała Jacek
Published: February 2017

Brak unijnej (czternastej) dyrektywy w sprawie przeniesienia siedziby statutowej spółki prowokuje do postawiania pytania: Czy państwo członkowskie może uniemożliwić spółce transgraniczne przekształcenie przez wprowadzenie wymogu jej rozwiązania po przeprowadzeniu procedury likwidacyjnej? Na gruncie prawa polskiego taki wymóg przewidziany jest w art. 270 pkt 2 oraz art. 459 pkt 2 k.s.h., w myśl których uchwały wspólników (akcjonariuszy) o przeniesieniu spółki za granicę są przyczyną jej rozwiązania oraz prowadzą do otwarcia likwidacji (art. 274 § 1 oraz art. 461 § 1 k.s.h.). W sprawie dotyczącej przekształcenia spółki polskiej w spółkę prawa luksemburskiego wątpliwość co do zgodności wymienionych przepisów Kodeksu spółek handlowych z art. 49 Traktatu o funkcjonowaniu Unii Europejskiej powziął Sąd Najwyższy, zadając Trybunałowi Sprawiedliwości pytanie prejudycjalne.Powszechnie oczekuje się wydania czternastej dyrektywy w sprawie transgranicznego przeniesienia siedziby statutowej spółki. Podzielając to oczekiwanie, autor podjął próbę uzasadnienia następujących wniosków de lege lata: po pierwsze – uzależnienie wykreślenia z rejestru polskiej spółki kapitałowej przenoszącej swą siedzibę statutową do innego państwa członkowskiego od jej rozwiązania po przeprowadzeniu procedury likwidacyjnej stanowi ograniczenie swobody przedsiębiorczości; po drugie – godne ochrony interesy wierzycieli i wspólników krajowej spółki przekształcanej chronią (stosowane do transgranicznego przekształcenia per analogiam) przepisy k.s.h. o przekształceniu spółek krajowych oraz o transgranicznym łączeniu się spółek oraz, w wielu sytuacjach, przepisy prawa unijnego; po trzecie ‒ przeprowadzenie transgranicznego przekształcenia nie wymaga zmiany lokalizacji (przeniesienia) głównego przedsiębiorstwa spółki przekształcanej.Wobec braku czternastej dyrektywy uzasadniony jest postulat de lege ferenda unormowania przez polskiego ustawodawcę transgranicznego przekształcenia albo przez odrębną regulację, albo przez stworzenie wyraźnej podstawy do odpowiedniego stosowania przepisów o przekształceniu spółek krajowych oraz przepisów o transgranicznym łączeniu się spółek.
Publicznoprawny charakter roszczeń odszkodowawczych za wywłaszczenie nieruchomości
Authors: Kruś Maciej
Published: February 2017

Kwestia zakwalifikowania roszczenia do ustalenia odszkodowania za wywłaszczenie nieruchomości do sfery publiczno- lub prywatnoprawnej na gruncie prawa polskiego budziła wątpliwości doktryny już w okresie międzywojennym i pozostała nierozwikłana jednoznacznie do dziś. Jest ona szczególnie istotna z punktu widzenia przedawnienia przedmiotowego roszczenia odszkodowawczego. Na gruncie prawa administracyjnego bowiem, w przeciwieństwie do roszczeń o charakterze cywilnoprawnym, roszczenia co do zasady nie ulegają przedawnieniu, chyba że ustawa stanowi inaczej.W niniejszym artykule autor poddaje analizie przykładowe akty prawne, będące podstawą do przeprowadzenia procedury wywłaszczania nieruchomości oraz ewentualnych roszczeń odszkodowawczych, począwszy od rozporządzenia Prawo o postępowaniu wywłaszczeniowem z 1934 r., przez powojenne dekrety i ich nowelizacje, na obecnie obowiązującej ustawie o gospodarce nieruchomościami skończywszy. Jednocześnie w oparciu o orzecznictwo sądów powszechnych i administracyjnych oraz wypowiedzi wybitnych przedstawicieli doktryny autor podejmuje próbę uzasadnienia swojego stanowiska w zakresie publicznoprawnego charakteru roszczeń odszkodowawczych za wywłaszczenie nieruchomości.
APOKRIFINĖS LITERATŪROS APRĖPTIS: DISKUSIJA DĖL ISTORINIŲ ATRIBOJIMŲ IR ŽANRO SAVITUMO
Authors: Ališauskas Vytautas
Published: February 2017

Straipsnyje aptariama XX a. antros pusės ir XIX a. pradžios diskusija dėl kriterijų, kuriais remiantis ankstyvosios krikščionybės veikalai gali būti priskiriami apokrifams. Diskusijai tinkamai suprasti ir kritiškai įvertinti turi būti atsižvelgiama į senąją, ankstyvojoje krikščionybėje susidariusią sampratą ir vėlesnę, po Apšvietos įsitvirtinusią tradiciją. Apokrifus siūloma identifikuoti, atsižvelgiant į jų santykį su poapaštaline bei vėlesne ortodoksija ir įvertinant jų turinio bei žanro sąsają su ankstyviausiu krikščionybės istorijos laikotarpiu arba jos priešistore.
The potential role of mesenchymal stem cells in a hypoxia model induced by sodium nitrite in testes of male albino rats
Authors: Ismaeil Nadia H. , Osman Amany A. , Ali Elham H.A. , Rashed Laila A. , Saleh Manal A.
Published: February 2017

Introduction: The present work aims to examine the possible role of stem cells on biochemical markers and histopathological alterations of hypoxia caused by sodium nitrite (NaNO2) toxicity in testes of male rats.

Methods: In this study, 96 adult male albino rats were divided into 6 groups (16 rats each). Group 1 (G1) was the control group and received distilled H2O. Group 2 (G2) received daily NaNO2 (35 m/kg bwt/ day) via subcutaneous injection for 3 weeks. Group 3 (G3) received NaNO2 for 2 weeks and were then injected once with 2*106 mesenchymal stem cells (MSCs) intravenously and sacrificed 4 weeks later. Group 4 (G4) received NaNO2 for 2 weeks and were then injected with 2*106 MSCs followed by daily NaNO2 injection for 1 week; rats in G4 were sacrificed 4 weeks from MSCs treatment. Group 5 (G5) rats were treated with NaNO2 for 2 weeks and then left to recover for 4 weeks. Finally, Group 6 (G6) rats were treated with NaNO2 for 3 weeks and left to recover for 3 weeks, after which point they were sacrificed.

Results: The results showed that NaNO2 caused oxidative damage and histopathological alterations in the rat testes, as well as increased the levels of testes malondialdehyde (MDA), nitric oxide (NO) and DNA fragmentation percentage (DNA F %). Moreover, NaNO2 decreased the elevated activities of testes catalase (CAT) and total antioxidant activity (TAA), in comparison to the control group. The histological results illustrated different distortions, vacuolization and lipid accumulations in interlobular space as well as diminution of inter cellular germ cell layers, absence of Leydig cells, irregular basement membrane of tubule, and separation within spermatogenic cells. In addition, congestion and dilation of intertubular and peripheral blood capillaries were found. Nevertheless, the administration of stem cells reduced the danger actions of sodium nitrite by enhancing biochemical marker concentration.

Conclusion: There was an improvement in the histology of the rat testes, including a relatively normal order in the different stages of spermatogonia and loss of different stages of spermatocytes. Regarding the recovery period, there was also a significant improvement in each of the biochemical parameters assessed and in the histological lesions.
Psychological Manifestations of Celiac Disease Autoimmunity in Young Children
Authors: Smith Laura B. , Lynch Kristian F. , Kurppa Kalle , Koletzko Sibylle , Krischer Jeffrey , Liu Edwin , Johnson Suzanne Bennett , Agardh Daniel ,   The TEDDY study group
Published: February 2017

BACKGROUND AND OBJECTIVES:

Psychological symptoms can be associated with celiac disease; however, this association has not been studied prospectively in a pediatric cohort. We examined mother report of psychological functioning in children persistently positive for tissue transglutaminase autoantibodies (tTGA), defined as celiac disease autoimmunity (CDA), compared with children without CDA in a screening population of genetically at-risk children. We also investigated differences in psychological symptoms based on mothers’ awareness of their child’s CDA status.

METHODS:

The Environmental Determinants of Diabetes in the Young study followed 8676 children to identify triggers of type 1 diabetes and celiac disease. Children were tested for tTGA beginning at 2 years of age. The Achenbach Child Behavior Checklist assessed child psychological functioning at 3.5 and 4.5 years of age.

RESULTS:

At 3.5 years, 66 mothers unaware their child had CDA reported more child anxiety and depression, aggressive behavior, and sleep problems than 3651 mothers of children without CDA (all Ps ≤ .03). Unaware-CDA mothers also reported more child anxiety and depression, withdrawn behavior, aggressive behavior, and sleep problems than 440 mothers aware of their child’s CDA status (all Ps ≤.04). At 4.5 years, there were no differences.

CONCLUSIONS:

In 3.5-year-old children, CDA is associated with increased reports of child depression and anxiety, aggressive behavior, and sleep problems when mothers are unaware of their child’s CDA status. Mothers’ knowledge of their child’s CDA status is associated with fewer reports of psychological symptoms, suggesting that awareness of the child’s tTGA test results affects reporting of symptoms.
The Role of Cardiovascular Magnetic Resonance Imaging in Heart Failure
Authors: Peterzan Mark A , Rider Oliver J , Anderson Lisa J
Published: February 2017

Cardiovascular imaging is key for the assessment of patients with heart failure. Today, cardiovascular magnetic resonance imaging plays an established role in the assessment of patients with suspected and confirmed heart failure syndromes, in particular identifying aetiology. Its role in informing prognosis and guiding decisions around therapy are evolving. Key strengths include its accuracy; reproducibility; unrestricted field of view; lack of radiation; multiple abilities to characterise myocardial tissue, thrombus and scar; as well as unparalleled assessment of left and right ventricular volumes. T2* has an established role in the assessment and follow-up of iron overload cardiomyopathy and a role for T1 in specific therapies for cardiac amyloid and Anderson–Fabry disease is emerging.
Biofilm formation of Achromobacter xylosoxidans on contact lens
Authors: Konstantinović Neda , Ćirković Ivana , Đukić Slobodanka , Marić Vesna , Božić Dragana D.
Published: February 2017

Achromobacter spp. may contaminate lenses, lens cases, and contact lens solutions and cause ocular infections. The aim of this study was to investigate the possibility of isolated strain of Achromobacter xylosoxidans to form biofilm on the surface of soft contact lenses (CL), to quantify the production of the formed biofilm, and compare it with the reference strains (Pseudomonas aeruginosa, Staphylococcus aureus, and Haemophilus influenzae). Bacterial strain isolated from one contact lens case was identified as A. xylosoxidans using Vitek2 Automated System. Biofilm forming capacity of isolated strain of A. xylosoxidans and reference strains of P. aeruginosa, S. aureus, and H. influenzae on soft CL were analyzed by commonly used microtitre plate method. Our results showed that isolated strain of A. xylosoxidans was capable to form biofilm on the surface of soft contact lens. A. xylosoxidans was strong biofilm producer while all examined reference strains were moderate biofilm producers. A. xylosoxidans appears to be superior biofilm producer on soft CL compared to reference strains.
A terhességi cukorbetegség rövid története, kockázati tényezői és diagnosztikája napjainkban
Authors: Al-Aissa Zahra , Hadarits Orsolya , Rosta Klára , Zóka András , Rigó Jr. János , Firneisz Gábor , Somogyi Anikó
Published: February 2017

Abstract:

Diabetes is one of the most common metabolic disorders that may cause pathological pregnancy. Treating diabetes recognized during pregnancy results in lowering maternal and fetal complications. These patients present higher risk for excessive weight gain, preeclampsia, delivery with cesarean sections, high risk of developing type 2 diabetes and cardiovascular disease in the future. Fetuses of mothers with gestational diabetes are at higher risk for macrosomia and birth trauma, after delivery they present higher risk of developing neonatal hypoglycemia, hyperbilirubinemia, and respiratory distress syndrome. There is still no consensus in the recommendations for the diagnosis of gestational diabetes mellitus by expert committees. Orv. Hetil., 2017, 158(8), 283–290.
Fiatalkori hallásrehabilitáció Baha® Attract implantátumrendszerrel
Authors: Posta Bálint , Jarabin János András , Perényi Ádám , Bere Zsófia , Neagos Adriana , Tóth Ferenc , Kiss József Géza , Rovó László
Published: February 2017

Abstract:

Introduction: Baha® Attract is a new transcutaneous bone-conduction hearing aid, which is more preferable in childhood than the conventional percutaneous systems. Aim: Our aim was to demonstrate the possibilities of application in childhood. Method: Eight children have undergone surgeries (mean age of 13.2 ± 3.2 years; “posterosuperior” incision technique, 5 mm implants). The thickness of the skull bone was determined in 72 children (1-8 years old) at the recommended implant site, based on CT scans. Results: The average duration of surgeries was 30 minutes. There were no intra- and postoperative complications observed. Sound processors were fitted at the postoperative 4th week. Hearing measurements proved 51.58±11.22SD dBHL gain in warble tone thresholds, and 43.3 ± 16.02 SD dB in speech discrimination thresholds. The skull bone thickness was measured as 3.39 ± 1.05 SD mm. Conclusion: The Baha Attract system is a new tool for hearing rehabilitation in pediatric population. Preoperative CT provides valuable knowledge about skull bone thickness. Orv. Hetil., 2017, 158(8), 304–310.
X-ray Absorption Spectroscopy on Copper Trace Impurities on Silicon Wafers
Authors: Singh Andy , Baur Katharina , Brennan Sean , Homma Takayuki , Kubo Nobuhiro , Pianetta Piero
Published: February 2017

Trace metal contamination during wet cleaning processes on silicon wafer surfaces is a detrimental effect that impairs device performance and yield. Determining the chemical state of deposited impurities helps in understanding how silicon surfaces interact with chemical species in cleaning solutions. However, since impurity concentrations of interest to the semiconductor industry are so low, conventional techniques such as x-ray photoelectron spectroscopy cannot be applied. Nonetheless, chemical information on trace levels of contaminants can be determined with x-ray absorption near edge spectroscopy (XANES) in a grazing incidence geometry. In this study, silicon samples were dipped in ultra pure water (UPW) and 2% hydrofluoric (HF) solutions with copper concentrations of 5 and 1000 ppb, respectively. These samples were then analyzed using XANES in fluorescence yield mode to determine the oxidation state of deposited copper contaminants. It was found that copper impurities on the silicon surface from HF solution were metal in character while copper impurities deposited from the spiked UPW solution were deposited as an oxide. These results show that XANES can provide information on the chemical state of trace impurities even at surface concentrations below a few thousandths of a monolayer.
Linewidth Dependence of the Reverse Bias Junction Leakage for Co-Silicided Source/Drain Junctions
Authors: Lauwers Anne , Potter Muriel de , Lindsay Richard , Chamirian Oxana , Demeurisse Caroline , Vrancken Christa , Maex Karen
Published: February 2017

In this work the reverse bias junction leakage was studied for Co-silicided 100 nm deep As source/drain junctions. The effect of pre-clean and silicidation temperature was investigated. The area component of the leakage current was found to be dominant for silicided source/drain areas wider than 1 mm. Increasing the thermal budget for silicidation was found to improve the area leakage. For diodes consisting of active area stripes narrower than 0.5 μm, the leakage current is no longer improved by increasing the silicidation temperature. As a result the leakage current is found to depend strongly on the active area linewidth. It was found that the linewidth dependence of the junction leakage cannot be attributed to silicide induced stress. It is argued that the higher leakage current observed for narrow lines can be attributed to the stress induced by the STI isolation and to increased silicide thickness in the narrow active lines
Thickness Effect on Nickel Silicide Formation and Thermal Stability for Ultra Shallow Junction CMOS
Authors: Zhao F. F. , Shen Z. X. , Zheng J. Z. , Gao W. Z. , Osipowicz T. , Pang C. H. , Lee P. S. , See A. K.
Published: February 2017

High purity Ni films from 200Å down to 40Å on p-type Si (100) substrates are treated by rapid thermal annealing to form the metastable and stable phases of nickel silicides. The stoichiometric composition of NiSi determined by Rutherford backscattering is independent of the initial Ni thickness under 500°C annealing. Channeling RBS results reveal that the NiSi growth on Si (100) has no preferred orientation. The sheet resistance as well as surface roughness of thinner films starts to increase at a lower temperature, indicating that thinner films are thermally less stable. Agglomeration of NiSi film agrees with the grain boundary grooving model and occurs more easily within thinner films. The transformation from the NiSi phase to the NiSi2 phase is studied by micro-Raman spectroscopy. This phase transition of thinner films begins at a lower temperature than that of thicker ones.
Suppression of NiSi-to-NiSi2 Transition Using Very Short-time RTA Silicidation
Authors: Ma D. , Chi D. Z. , Wang W. D. , Wong A. S. W. , Chua S. J.
Published: February 2017

Thermal stability of NiSi is a major concern for its application in sub-0.1 μm CMOS devices, due to the transition of NiSi to the high-resistivity disilicide (NiSi2) at elevated temperatures. In this study, we have investigated the effect of RTA silicidation duration on NiSito-NiSi2 transition during Ni-silicidation reaction of Ni film (20-25 nm thick) on (100)Si. It was found that the NiSi-NiSi2 transition temperature was increased remarkably from 700 to > 800 °C by reducing the RTA time from 60 to 1 s. Agglomeration of silicides films was also found to besuppressed by short-time annealing. A temperature-time transformation (TTT) diagram has been constructed, which demonstrates the time-dependency of NiSi-NiSi2 transition. Based on the classical theory on phase transformation kinetics, a concept of induction time was employed to elucidate the key roles of transformation time and film thickness in determining the NiSi-NiSi2 transition temperature.
Nickel, Platinum and Zirconium Germanosilicide Contacts to Ultra-shallow, P+N Junctions Formed by Selective SiGe Technology for CMOS Technology Nodes Beyond 70nm
Authors: Liu Jing , Mo Hongxiang , Öztürk Mehmet C.
Published: February 2017

Selective SiGe source/drain technology based on selective deposition of in-situ doped SiGe alloys in recessed source/drain regions can provide junctions with low sheet and contact resistance as well as abrupt doping profiles. This paper examines properties of Ni, Pt and Zr germanosilicides on heavily boron doped SiGe junctions. Our results show that all three metals can form low resistivity germanosilicides on heavily boron doped SiGe alloys. The stability of Ni germanosilicide was found to be limited to about 400°C on undoped SiGe. On heavily boron doped SiGe thermal stability was found to be significantly better possibly due to boron strain compensation. Our findings indicate that on undoped SiGe, thermal stability of Ni germanosilicide could be much enhanced by using a thin Pt interlayer. According to X-ray diffraction analysis, with increasing formation temperature, both Ni and Pt germanosilicides moved toward Ni and Pt monosilicides with signs of excess Ge appearing outside the contact. Analysis of the Pt germanosilicide layers is suggestive of a Ge rich SiGe layer under the germanosilicide. Boron diffusion into Pt and Ni germanosilicides was not observed. On the other hand, a distinct boron peak was observed in Zr germanosilicide suggestive of a stable Zr-B compound. Ultra-shallow junctions with excellent reverse bias behavior were formed using both Ni and Zr germanosilicides.
Study Of Ta2O5 Based MOS Capacitors, With Tantalum Oxidized In O2:NH3 Ambient.
Authors: Krishnamoorthi Pallavi , Chandorkar A N
Published: February 2017

Tantalum Pentaoxide, an alternative to SiO2, as a high-k dielectric for DRAM and MOS applications, faces the problem of interface mismatch at silicon. SiO2 or Si3N4 interfacial layer could help in overcoming this problem. The higher band offsets of these materials also help in the reduction of leakage currents at low electric fields. Here we study the physical and electrical characteristics of Ta, oxidized in O2:NH3 ambient, and without any other interface layer. This is done to check if N/H moves to the interface, and thus improves the electrical properties. XRD studies of the film, showed the presence of Ta2O5. Peaks corresponding to TaSi2, un-oxidized tantalum and TaN were also found in the film. But the intensity of these peaks decreased with the reduction of NH3 content. Thus a higher oxygen content could reduce the content of TaN and unoxidized tantalum. FTIR analysis however showed strong Ta=O and Si-O peaks. For the MOS capacitors, due to the presence of resistive components, the maximum capacitance was reduced, compared to that of pure Ta2O5 films. Oxide charges in the films were observed to be around 1.9E10 cm-2. But the traps in these films were found to be almost negligible as observed from the negligible hysteresis in the C-V characteristics. Films with N/H showed lesser oxide charges by an order of magnitude, as compared to pure Ta2O5 films.
Effects of Borophosphosilicate Glass Dopant Concentrations on Isotropic Etch Profile
Authors: Gibson Chris , Williams Bradley , Evans Stacey
Published: February 2017

In the process of chemically etching contact openings, film characteristics of the Borophosphosilicate glass (BPSG) film strongly effect the formation of an ideal contact profile. Ideal contact profiles represent a wine glass shape to provide better metal step coverage into the contact opening in comparison to a vertical sidewall profile. The rounded shape of the wine glass is etched chemically (isotropic) allowing for etch in the vertical and horizontal direction. As the addition of dopants to the oxide film effect the etch rate, the profile of the isotropic etch will change which in turn effects the electrical device properties, down stream processes and device reliability.

BPSG film characteristics are the area of investigation. Characteristics of concern are weight percent concentrations of boron and phosphorus, film density and dopant concentration profiles in relation to depth. To evaluate the entire contact formation module, chemical etch characteristics including etch rate in relation to film depth for thermal oxide films were also investigated. Experimentation in the form of a response surface design was used to model effects of previously discussed BPSG film characteristics.

To achieve the desired and predictable wet etch rate of BPSG in a buffered oxide etch (BOE), calculated control limits were placed on the boron and phosphorus dopant concentrations. Results showed that dopant effects on the isotropic etch process exceeded the control capability of dopant concentrations in the deposition process. In relating process control capabilities to 6σ techniques, a Cpk above 1.5 is considered capable. To eliminate previously discussed defects created in the isotropic etch process, reject limits for dopant concentrations in a BPSG film deposition process would need to be set well within the typical 6σ giving a Cpk below 1.5
Optimization of Ultrathin ALD Tantalum Nitride Films for Zero-Thickness Liner Applications
Authors: Straten Oscar van der , Zhu Yu , Eisenbraun Eric , Kaloyeros Alain
Published: February 2017

A metal-organic atomic layer deposition (ALD) tantalum nitride process has been demonstrated for zero-thickness liner applications in advanced copper metallization schemes. Utilizing a commercially available ALD reactor, this process employs a liquid tantalum source (tertbutylimido tris(diethylamido) tantalum—TBTDET) and ammonia as the reactants. Key functionality data addressing the self-limiting nature of ALD film growth with respect to key process parameters including processing temperature and the substrate surface exposures to TBTDET and ammonia have been obtained, leading to the establishment of an optimized ALD processing window. Highly conformal, continuous, and smooth growth over high aspect ratio structures is exhibited, and incubation periods appear to be relatively substrate independent. Preliminary thermal and electrical copper barrier performance testing of the deposited films indicates that they hold promise for use in emerging nanoscale interconnect applications.
Nanoindentation of Silicate Low-K Dielectric Thin Films
Authors: Vella Joseph B. , Volinsky Alex A. , Adhihetty Indira S. , Edwards N.V. , Gerberich William W.
Published: February 2017

The capabilities of nanoindentation to characterize low-k organo silicate glass (OSG) thin films is explored as a relatively rapid and inexpensive metric of mechanical properties, adhesion strength, and fracture toughness. One method of decreasing the static dielectric constant of OSG interlayer dielectrics requires the introduction of porosity in the material which has a dramatic impact on its mechanical and toughness properties. Percolation theory is used to formulate a correlation between porosity and elastic modulus. Using cube corner diamond indentation and scratch testing fracture toughness calculations are also discussed.
Characteristics of low-k and ultralow-k PECVD deposited SiCOH films.
Authors: Grill A. , Patel V. , Rodbell K.P. , Huang E. , Christiansen S. , Baklanov M. R.
Published: February 2017

We have shown previously that the dielectric constants of PECVD prepared SiCOH dielectrics can be extended to ultralow-k values of k=2.0. The reduction in the dielectric constants has been achieved by adding an organic precursor to the tetramethylcyclotetrasiloxane (TMCTS) used for the preparation of the SiCOH dielectric and annealing the films to remove the thermally less-stable organic CHx fractions from the films, thereby adding porosity and reducing the density of the films. To assess the effects of the reduction of the dielectric constant on other physical properties of the material, the density and composition of the films have been determined by RBS and FRES and the porosity has been measured by PAS/PALS, SAXS and ellipsometric porosimetry. In addition the films have been characterized structurally and topologically by TEM and AFM.

It has been found that addition of the organic precursor reduces the Si fraction in the films, however, there is no direct correlation between dielectric constant and film composition. The dielectric constant and density decrease with increasing porosity in the films, which reaches values of 30-39% for k values of 2.05. The pore size increases with decreasing k, however the diameter remains below 5 nm for k=2.05. This is significantly smaller than the pore size typically found in porous spin-on films and may provide an integration advantage compared to spin-on films having similar k values.
Novel Periodic Nanoporous Silicate Glass With High Structural Stability as Low-k Thin Film
Authors: Oku Yoshiaki , Nishiyama Norikazu , Tanaka Shunsuke , Ueyama Korekazu , Hata Nobuhiro , Kikkawa Takamaro
Published: February 2017

We have recently developed novel periodic nanoporous silicate glass with high structural stability as low-k thin film by spin-coating method. Periodic porous silicate glass films developed so far cause structural shrinkage (10>∼20% or more) by annealing the spin-coated films. In this investigation we adopt vapor-phase TEOS (tetraethoxysilane)-treatment before anneal. Our novel nanoporous film shows little shift of XRD peak position after annealed at 673K, indicating both the ultimate mechanical strength and the minimization of stress in the interface between the prepared film and the underlying substrate. Such a shrinkage-free periodic nanoporous silica film can possess higher VBD (break down voltage) and lower ILeak (leakage current). In this article we estimate structural properties (including information on pores introduced intentionally) by XRD and TEM observation, and electrical properties (dielectric constant, VBD and ILeak) by IV and CV measurement of this special-treated periodic nanoporous silica film. The dielectric constant of the thus prepared periodic porous silica film with silylation after calcination was evaluated to be around 1.8 at 100kHz.
Thermal Stability Studies on 1, 3, 5, 7 - Tetramethylcyclotetra-Siloxane(TMCTS), a Low к CVD Precursor
Authors: Xu C. , Borovik A. S. , Wang Z. , Arno J. , Baum T. H.
Published: February 2017

Chemical studies on 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) were conducted to elucidate its thermal behaviors with water and under various reaction conditions. TMCTS was heated in the presence of 316L stainless steel and in the presence of water. The heated TMCTS then was evaluated using 1H NMR (proton nuclear magnetic resonance) spectroscopy, GC-MS (gas chromatography-mass spectrometry) as a function of time, temperature and residual water concentration. The thermal degradation kinetics of gas-phase TMCTS were investigated using FTIR (Fourier transform infrared) spectroscopy at elevated temperatures. These initial results indicated that TMCTS degradation rates increased with both temperature and water concentration. This work spawned the development of a “dry” TMCTS that is expected to exhibit enhanced thermal stability relative towards uncontrolled decomposition.
Electromigration in Submicron Dual-damascene Cu/low-k Interconnects
Authors: Lee Ki-Don , Lu Xia , Ogawa Ennis T. , Matsuhashi Hideki , Blaschke Volker A. , Augur Rod , Ho Paul S.
Published: February 2017

Electromigration (EM) lifetime characteristics and failure mechanism were investigated for Cu/porous-low-k interconnects and compared to Cu/oxide. The porous low-k dielectric was JSR LKD-5109TM, an MSQ-based spin-on organosilicate material with k = 2.2. The activation energies for EM failure were found to be 0.9 - 1.0 eV for the porous MSQ and 0.8 eV for oxide while the current density exponents for both materials were found to be similar, 1.2 - 1.3. This range of activation energies are commonly associated with mass transport at the Cu/cap-layer interface and suggest a similar mass transport mechanism; interfacial diffusion. Porous MSQ structures showed the same distinct failure morphology as observed in other Cu/low-k interconnects: voiding at the cathode and lateral Cu extrusion at the anode under the cap layer, which seems to be related to the thermo-mechanical properties of Cu/low-k interconnects. The shorter lifetime characteristics of Cu/low-k interconnects comparing to Cu/oxide can be attributed to a smaller back stress, due to less thermomechanical confinement. Results of this study indicate that thermo-mechanical properties of low-k interconnects are important parameters in controlling EM reliability of Cu/low-k interconnects.
EBIC and XTEM Analysis of High Voltage SMOS Reliability Failures
Authors: Rice Larry
Published: February 2017

Microscopists are faced with many challenges in locating and examining failure sites in the ever-shrinking semiconductor device. The site must be located using electrical characterization techniques like electron beam induced current (EBIC), photo emission microscopy (PEM) or liquid crystal (LC) and then cross-sectioned with a focused ion beam (FIB). Both PEM and LC require the semiconductor circuit to be running near operating conditions which has been observed to locally melt the area of interest, frequently destroying evidence of the failure mechanism. In contrast, EBIC typically can be accomplished at low or no applied voltage eliminating further damage to the circuit. EBIC has been applied to locate leakage sites in high voltage metal oxide semiconductor (MOS) electro static discharge (ESD) reliability failures. In addition to a brief revisit of the basic principles of EBIC and describing a technique to successfully cross section ‘hot spots’ for transmission electron microscopy (TEM) observation, focus will be placed on a case study of the reliability testing failure analysis of ESD power transistors using EBIC, SEM, focused ion beam (FIB), and XTEM.
Mechanical-Stress-Controlled Silicide Interconnections for Highly Reliable Semiconductor Devices
Authors: Shimazu Hiromi , Miura Hideo
Published: February 2017

Mechanical stress develops in silicide interconnection structures due to the volumetric shrinkage of newly grown silicide film during silicidation. Silicidation-induced stress of about 1 GPa was measured by inducing a reaction between a silicon wafer and a titanium film deposited on the wafer. The stress developed near the interface between the grown silicide film. The remaining silicon was analyzed using a finite-element method. The critical stress for delamination at the interface was determined by comparing the results of the estimated stress at the interface with the cross-sectional observation results of different interconnection-structures test samples. We also determined the critical thickness of TiSi2 and the diameter of silicide contacts for eliminating delamination at the interface.
Chemical Vapor Deposition of Ru and RuO2 for Gate Electrode Applications
Authors: Papadatos Filippos , Skordas Spyridon , Patel Zubin , Consiglio Steven , Eisenbraun Eric
Published: February 2017

In this work, Ru and RuO2 films have been investigated for potential applications in emerging CMOS gate electrode and memory capacitor bottom electrode applications. Films were deposited on SiO2 using chemical vapor deposition (CVD) and low power plasma assisted CVD (PACVD) in a 200-mm wafer deposition cluster tool using a metal beta-diketonate precursor [Bis (2,2,6,6-tetramethyl-3,5-heptanedionato) (1,5-cyclooctadiene) ruthenium (II)]. Hydrogen and oxygen were employed as the reactive gases to deposit, respectively, Ru and RuO2, over a wafer temperature range from 320°C to 480°C. The resulting film properties were analyzed using cross-sectional scanning electron microscopy (CS-SEM), four point resistance probe, x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Both Ru and RuO2 films could be deposited with minimal carbon concentration (∼5 at. %). The purity of the films was also reflected in the as-deposited resistivity of the films, which was as low as 47 μΩ-cm, and was strongly dependent on processing conditions. In order to assess thermal stability, the films were subsequently annealed in forming gas and oxygen ambients for 60 min at 650°C. It was observed that, generally speaking, CVD RuO2 films were stable, with respect to resistivity, in oxidizing ambients, while annealing in a reducing ambient resulted in significant film densification and reduction of the film resistivities to as low as 43 μΩ-cm. Ru films demonstrated good adhesion after anneals in oxidizing, but not in reducing ambients.
Effect of Technology Scaling on MOS Transistor Performance with High-K Gate Dielectrics
Authors: Mohapatra Nihar R. , Desai Madhav P. , Narendra Siva G. , Rao V. Ramgopal
Published: February 2017

The impact of technology scaling on the MOS transistor performance is studied over a wide range of dielectric permittivities using two-dimensional (2-D) device simulations. It is found that the device short channel performance is degraded with increase in the dielectric permittivity due to an increase in dielectric physical thickness to channel length ratio. For Kgate greater than Ksi, we observe a substantial coupling between source and drain regions through the gate dielectric. We provide extensive 2-D device simulation results to prove this point. Since much of the coupling between source and drain occurs through the gate dielectric, it is observed that the overlap length is an important parameter for optimizing DC performance in the short channel MOS transistors. The effect of stacked gate dielectric and spacer dielectric on the MOS transistor performance is also studied to substantiate the above observations.
Atomic-Layer Deposition of ZrO2 Thin Films Using New Alkoxide Precursors
Authors: Jones Anthony C. , Williams Paul A. , Roberts John L. , Leedham Timothy J. , Davies Hywel O. , Matero Raija , Ritala Mikko , Leskelä Markku
Published: February 2017

Atomic layer deposition is a promising technique for the deposition of ZrO2 thin films for high-k gate dielectric applications. However, there are a number of problems associated with existing Zr precursors such as ZrCl4 and [Zr(OBut)4]. In this paper, we examine the ALD of ZrO2 using the new alkoxide complexes, [Zr(OBut)2(dmae)2], [Zr(OPr1)2(dmae)2] and [Zr(dmae)4] (dmae = [OCH2CH2NMe2]), and compare the results with data obtained using [Zr(OBut)4].
Mechanism of the Suppression of Zr Silicide Formation in Poly-Si/ZrON/ZrSiON/Si Structure
Authors: Koyama Masato , Suguro Kyoichi , Hongo Chie , Koike Mitsuo , Kamimuta Yuichi , Suzuki Masamichi , Nishiyama Akira
Published: February 2017

In this paper, the mechanisms of the suppression of Zr-silicide formation in poly-Si/ZrON/interfacial-layer/Si structure at 1000°C annealing are discussed in detail. It was demonstrated that gaseous SiO desorption, which played a dominant role in the silicide formation in the case of the ZrO2/SiO2/Si, was completely inhibited in the ZrON/interfacial-layer/Si structure. In addition, we have found that an ultrathin interfacial SiON layer between poly-Si and ZrON stabilized the interface. Consequently, we concluded that the effective nitrogen incorporation into top/bottom interfacial SiON layers with our process was responsible for the superior thermal stability of the stack.
Effective Dielectric Thickness Scaling for High-K Gate Dielectric Mosfets
Authors: Bhuwalka Krishna Kumar , Mohapatra Nihar R. , Narendra Siva G. , Rao V Ramgopal
Published: February 2017

It has been shown recently that the short channel performance worsens for high-K dielectric MOSFETs as the physical thickness to the channel length ratio increases, even when the effective oxide thickness (EOT) is kept identical to that of SiO2. In this work we have systematically evaluated the effective dielectric thickness for different Kgate to achieve targeted threshold voltage (Vt), drain-induced barrier lowering (DIBL) and Ion/Ioff ratio for different technology generations down to 50 nm using 2-Dimensional process and device simulations. Our results clearly show that the oxide thickness scaling for high-K gate dielectrics and SiO2 follow different trends and the fringing field effects must be taken into account for estimation of effective dielectric thickness when SiO2 is replaced by a high-K dielectric.
Electrical Characterization of SIMOX SOI Wafers with MOSOS C-V Measurements
Authors: Li C.L. , Yu Y.H. , Chen M. , Zou S.C. , X Sh. , Lin Z.X.
Published: February 2017

SIMOX SOI is quite attractive for IC technology because of its potential for high-speed and low power consumption. SOI wafers are required to maintain good electrical performances in the buried oxide (BOX) layers, thus it is imperative to study the electrical characteristics of the BOX layers and the interface states. C-V and I-V techniques are very frequently utilized for extracting the parameters of the Si-SiO2 interface in bulk-silicon MOS systems. In this paper, we use a new two-terminal MOSOS (metal-oxide-semiconductor-oxide-semiconductor) structure to study the electrical characteristics of SIMOX SOI wafers. Results gained from the comparison between the experimental curves and simulation curves are presented and analyzed. We show considerable improvement in comparison with results obtained using traditional methods.
Modeling Boron Diffusion in Polycrystalline HfO2 Films
Authors: Liu Chun-Li
Published: February 2017

We present ab-initio modeling results including formation, migration, and activation energies for B diffusion through bulk and grain boundaries in polycrystalline HfO2 films. Modeling results clearly indicate that B can penetrate through a 40 Å HfO2 film via grain boundary diffusion, but not by bulk diffusion. SIMS analysis of B concentration profiles for polysilicon/HfO2/Si gate stacks after different anneals showed double B peaks at the interfaces and thus confirmed the modeling prediction.
Is it a Right Assumption That B and Ge are Distributed Randomly After Growing a Strained HBT-Structure?
Authors: Kol'dyaev Victor I.
Published: February 2017

It is accepted that surface Ge atoms are considered to be responsible for the surface B segregation process. A set of original experiments is carried out. A main observation from the B and Ge profiles grown at different conditions shows that at certain conditions B is taking initiative and determine the Ge surface segregation process. basic assumptions are suggested to self-consistently explain these original experimental features and what is observed in the literature. These results have a strong implication for modeling the B diffusion in Si1-xGex where the initial conditions should be formulated accounting for the correlation in B and Ge distribution. A new assumption for the initial condition to be “all B atoms are captured by Ge” is regarded as a right one implicating that there is no any transient diffusion representing the B capturing kinetics.
Synthesis of Ordered Nanoporous Silica Film With High Structural Stability
Authors: Nishiyama Norikazu , Tanaka Shunsuke , Egashira Yoshiyuki , Oku Yoshiaki , Kamisawa Akira , Ueyama Korekazu
Published: February 2017

A mesoporous silica film was prepared on a silicon substrate using a spin-coating process followed by a tetraethyl orthosilicate (TEOS) vapor treatment. The stability of a formed silica network before TEOS treatment is thought to be insufficient because the rate of the condensation reaction is not high at temperatures below 453 K. The density of silica wall surrounding surfactant assembly could be low, resulting in the structural contraction with the formation of a silica network. On the other hand, the TEOS-treated mesoporous silica film did not contract during calcination, showing high structural stability. In the TEOS treatment, TEOS molecules penetrate into an originally deposited silicate film and react with silanol groups. The densified silica wall has high structural stability and hardly contracts under a calcination process. A flat mesoporous silica film about 250 nm thick was grown from the silicon substrate. A periodic hexagonal porous structure was observed in the FE-SEM image of the cross section of the TEOS-treated film. This indicates that the channels run predominantly parallel to the surface of the silicon substrate. The developed film is a promising material such as chemical sensors, low-k films and other optoelectronic devices.
Challenges in Etching of OSG Low- K Materials for Dual-Damascene Metallization
Authors: Bliznetsov Vladimir N. , Mukherjee-Roy Moitreyee , Wing Leong Yew , Teck Ng Beng , Chuan Yew Wee
Published: February 2017

Issues associated with trench etching in low-k OSG (organosilicate glass) films for dual damascene applications and in particular for “via-first” integration scheme were the focus of this study. As a result of designed experiment in dipole ring magnet (DRM) etcher with C4F8/N2/Ar gas mixture the trench process was established with sidewall profile 89° and flat bottom. Selectivity obtained was enough to pursue etch processes using planarizing BARC (bottom antireflective coating) for additional via bottom protection. BARC fill in vias and BARC opening time were tuned to reduce generation of polymers during etch. Effective combination of dry /wet clean recipes was developed for removal of post-RIE (reactive ion etching) residues without significant changes in OSG k-value. Optimized processes were successfully used for creating dual damascene structure complying with integration requirements for 0.13 μm design rules.
Characterization of Polysiloxane Modified Polysilsesquioxane Films for Low Dielectric Applications: Microstructure, Electrical Properties and Mechanical Properties
Authors: Hyeon-Lee Jingyu , Lyu Yi Yeol , Mah Sang Kook , Yim Jin-Hyeong , Jeong Hyun-Dam , Lee Mong Sup , Kim Sang Youl
Published: February 2017

Poly(ε-caprolactone) (PCL) / poly(siloxane-silsesquioxane) (PSQ-PSSQ) nanohybrid films were fabricated. The dielectric constant of the film was scaled down from 2.66 to 2.28 when the 30% PCL was added into poly(siloxane-silsesquioxane) matrix. The FE-SEM micrograph of poly(ε-caprolactone) / poly(siloxane-silsesquioxane) (PSQ-PSSQ) nanohybrid film shows nanoporous structure. The modulus and hardness of the film decrease with increasing film thickness. As PCL content increases, modulus and hardness of the films decreases.
Study of Porous Silica Based Films as Low-k Dielectric Material and their Interface with Copper Metallization
Authors: Fisher Ilanit , Kaplan Wayne D. , Eizenberg Moshe , Nault Michael , Weidman Timothy
Published: February 2017

The success of future gigascale integrated circuits (IC) chip technology depends critically upon the reduction of the interconnects RC delay time. This calls for the development of new low dielectric constant (low-k) insulators, and for work on their integration with lower resistivity copper metallization.

A porous silica based film prepared by surfactant templated self-assembly spin-on deposition (SOD) is an attractive candidate as a low-k material. In this research we have studied the structure, chemical composition and bonding of the film and its interface with copper metallization. The decomposition and vaporization of the surfactant in the last step of film deposition resulted in a film with an amorphous structure, as determined by XRD and TEM analysis. Its high porosity (35-58%) was confirmed by XRR and RBS measurements. XPS analysis of the Si2p transition indicated three types of bonding: Si-O, O-Si-C and Si-C. The bonding characteristics were also investigated by FTIR analysis. The effect of a hydrogen plasma post-treatment process on the film topography and bonding was determined by AFM and XPS, respectively. It was found that direct H2 plasma exposure significantly affected the surface roughness of the film and type of chemical bonding. The structure and properties of various PECVD deposited capping layers were also studied, as was the interface between the porous dielectric and Ta, TaxN and Cu (PVD deposited films) after annealing at 200-700°C in vacuum environment for 30 min. At temperatures up to 500°C, no significant diffusion of Cu or Ta into the porous film was detected, as determined by RBS. No copper penetration was detected up to 700°C, according to AES and SIMS analysis. However, at 700°C copper dewetting occurred when it was deposited directly on the porous silica based film.
Polarity Dependence of Degradation in Ultra Thin Oxide and JVD Nitride Gate Dielectrics
Authors: Mutha Yatin , ManjulaRani K.N. , Lal Rakesh , Rao V.Ramgopal
Published: February 2017

We have studied high field degradation of Jet Vapor Deposited (JVD) silicon nitride MNSFETs with DC stress fields and compared their degradation with conventional silicon dioxide MOSFETs under identical stress conditions. We have observed that in both oxide and nitride devices, the interface degradation is higher for negative gate field. Further, the relative degradation of nitrides is always lower compared to that of oxides for both positive and negative stress conditions. AC stress experiments were performed on these ultra thin oxide transistors to understand possible degradation processes. The frequency, the peak-to-peak and offset voltage of the applied AC signal are some of the parameters that have been varied. Detailed characterization results and an analysis of the degradation mechanisms are presented in this paper. We conclude that many of the degradation results can be explained using the trapped hole recombination model.
Use of Small Gate Voltage Pulses for the Extraction of the Interface Trap Densities in MOS Structures Using The Charge Pumping Technique
Authors: Lin Eugène , Moussy Eric , Bauza Daniel
Published: February 2017

A general model for charge pumping is derived and is used for extracting interface trap densities using small gate voltage pulses. In MOS structures with ultrathin oxides, this strongly reduces the leakage current and prevents the oxide from any degradation. Interface trap densities from devices with oxides from 2.3 to 1.3 nm thick are reported for the first time.