bluuebunny/crossref_metadata_2025 huggingface dataset:
AVALANCHE BREAKDOWN VOLTAGE OF GaAs p+-n-n+ DIODE STRUCTURES
Authors: Kuno H. J. , Collard J. R. , Gobat A. R.
Published: January 2004

The ionization rates of GaAs are first empirically determined from breakdown voltage measurements of p+-n junctions with thick n layers. The theoretical analysis is then extended to p+-n-n+ structures in which space-charge punch-through occurs before breakdown takes place. The avalanche breakdown voltages of GaAs p+-n-n+ diode structures are calculated as a function of the n layer thickness W as well as the doping density n. Comparison of the theoretical calculation with experimental data shows very good agreement.
ELECTRICAL RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS: THE CASE OF SPECULAR REFLECTION AT EXTERNAL SURFACES
Authors: Mayadas A. F. , Shatzkes M. , Janak J. F.
Published: January 2004

A model is developed for estimating effects due to electron scattering from grain boundaries, occurring simultaneously with background scattering. Since grain-boundary effects are negligible in bulk materials, the model is particularly relevant to polycrystalline metal films in which a very fine-grained structure is often found. It is shown by solution of the appropriate Boltzmann equation, that the total resistivity can be strongly dominated by grain-boundary scattering. If grain size increases with film thickness, a marked dependence of resistivity on thickness exists, even when scattering from external surfaces is negligible or is completely specular.
FAR-INFRARED CONTINUOUS-WAVE LASER OSCILLATION IN PURE HELIUM
Authors: Levine J. S. , Javan A.
Published: January 2004

Continuous-wave laser oscillation has been observed in pure helium at wavelengths of 95.8 and 216.3 μ corresponding to the 31P → 31D and 41P → 41D transitions, respectively. Study of the excitation mechanism of the laser levels permits calculation of gain and output power starting from first principles.
MAGNETO-OPTICAL PROPERTIES OF A GREEN ROOM-TEMPERATURE FERROMAGNET: FeBO3
Authors: Kurtzig A. J. , Wolfe R. , LeCraw R. C. , Nielsen J. W.
Published: January 2004

Iron borate (FeBO3) is a transparent, green, uniaxial, canted antiferromagnet with a Curie temperature of 348°K. The optical absorption in the samples observed has a local minimum of 39 cm−1 in the green (5250 Å). The Faraday rotation at 5250 Å is 2300° per cm. The phase retardation associated with the uniaxial birefringence is about 4 × 105 per cm and the two indices of refraction are about 2.1 for the visible spectrum.
FERROMAGNETIC RESONANCE IN FeBO3, A GREEN ROOM-TEMPERATURE FERROMAGNET
Authors: LeCraw R. C. , Wolfe R. , Nielsen J. W.
Published: January 2004

Iron borate (FeBO3) is a transparent, green, room-temperature weak ferromagnet (a canted anti-ferromagnet) with a Curie temperature of 348°K. Ferromagnetic resonance measurements, i.e., linewidth, anisotropy fields, and g factor vs temperature and frequency are reported for the first time on this material. A low-temperature linewidth maximum of unknown origin is also observed. Its narrow linewidth, large magnetic anisotropy, large optical Faraday rotation, and transparency in the green (the latter two reported elsewhere) made FeBO3 of interest for devices such as electronically tunable cavities and filters up to ∼100 GHz and high-speed magneto-optic modulators.
MACROSTRUCTURAL INTEGRITY OF VAPOR-DEPOSITED BORON AND SILICON CARBIDE FILAMENT
Authors: Adler R. P. I. , Hammond M. L.
Published: January 2004

Difference in the macrostructure of vapor-deposited B and SiC filaments have been related to the extent of reaction between the deposited material and its tungsten substrate. Chemical reactions between W and B during deposition create mechanical dilatations of sufficient magnitude to produce radial cracks in the B sheath running the length of the filament. Similar reactions between W and SiC do occur but such cracks do not form because both the amount of the reactant is less and the corresponding volume expansion is significantly smaller.
AUGER EXCITATION BY INTERNAL SECONDARY ELECTRONS
Authors: Houston J. E. , Park Robert L.
Published: January 2004

Electron-excited Auger spectroscopy, as it is presently applied, utilizes incident beam energies which are normally greater than that corresponding to the maximum ionization cross section. Preliminary measurements indicate that Auger emission at these high primary energies is significantly enhanced due to excitation by internal secondary electrons. This creates a serious problem with respect to the use of Auger spectroscopy as an analytical tool.
ELECTRON MICROSCOPY OBSERVATIONS OF THE DISLOCATION STRUCTURE IN LITHIUM CRYSTALS
Authors: Pétroff P. , Jouffrey B.
Published: January 2004

Li thin foils of 1-μ thickness or more were observed by conventional electron microscopy with 100-keV electrons. The dislocation structure has been analyzed at 300°K and around 100°K in the bcc phase of Li. Dislocation slip planes are of the {112} types and most dislocations are parallel to 〈110〉 directions.
DIRECT VIDEO IMAGING OF X-RAY TOPOGRAPHS
Authors: Meieran Eugene S. , Landre John K. , O'Hara Sydney
Published: January 2004

In this paper, a video display system for direct imaging of transmission and reflection x-ray topographs of Si and GaAs wafers is described. This system allows instantaneous viewing of x-ray topographs with fields of view on the order of 2 cm by 1 cm. The resolution of the system is now limited by the sensitivity of the x-ray phosphor to about 30 μ. Slip bands and diffused devices have been directly observed in both Si and GaAs, as have been accidentally induced damage such as scratches and wafer warpage. Also, Laue patterns for orientation of wafers and ingots can be directly viewed, eliminating the time consuming method of film techniques.
SHALLOW LEVEL TRAPPING AND DETRAPPING IN Si(Li) DETECTORS AT LOW TEMPERATURES
Authors: Martini M. , McMath T. A.
Published: January 2004

Trapping-detrapping pulse shapes have been observed in two Si(Li) detectors in the temperature range 8.5–70°K. A semiquantitative treatment leads to the conclusion that shallow trapping levels are responsible for the observed phenomena. It appears likely that these levels correspond to the donor (Li) and acceptor (B) dopants; if this hypothesis is confirmed by further experimental work it establishes a low-temperature limit on the use of semiconductor detectors for γ-ray and high-energy particle spectroscopy.
ABSORPTION OF CO2 LASER LINES BY SF6
Authors: Shimizu Fujio
Published: January 2004

Absorption of CO2 laser lines by SF6 was studied by several methods for various P laser lines of the 00°1–10°0 band. It is concluded that the absorption of the P20 line is mainly due to the several SF6 lines with J values between 50 and 80.
HIGH-POWER OPERATION OF PULSED WATER-VAPOR LASER AND PRECISION WAVELENGTH MEASUREMENT OF THE STRONGEST COMPONENT
Authors: McFarlane R. A. , Fretz L. H.
Published: January 2004

The pulsed water-vapor laser has been operated at peak output power levels of 5 kW (all lines) and an average power of ¼ W. The frequency of the most energetic component of the emission has been measured to be ν̄ = 357.506 ± 0.003 cm−1.
PEAK EFFECT IN A TYPE-I SUPERCONDOCTOR (LEAD)
Authors: Levy H. , Meincke P. P. M.
Published: January 2004

The peak effect has been produced in lead in the intermediate state near 0.8 Hc, where flux motion is known to occur. The field-independent pinning centers were introduced by spark-drilling small holes through the sample.
TRANSITION TEMPERATURES OF LAMINATED INTERMETALLIC COMPOUNDS Nb3Sn AND Nb3Al0.8Ge0.2
Authors: Tanaka Eihachiro , Fukuda Takeji , Kuma Shoji , Yamashita Tsutomu , Onodera Yutaka
Published: January 2004

In the present report, data are presented on the transition temperatures and the critical currents of laminated Nb3Sn and Nb3Al0.8Ge0.2 tapes. The samples were prepared by rolling techniques and diffusion process. At first, the plates were prepared by accumulating foils of materials alternatively. Then the plates were rolled to a flexible tape and heat-treated. By heat treatment the transition temperature Tc of Nb3Sn tape increases and reaches the constant value ≃ 18.0°K for 10 min at 1050°C. For Nb3Al0.8Ge0.2, Tc = 19.2°K is obtained by heat treatment at 1600°C for 1 min and annealing at 760°C for 2 h. The critical currents of the samples are discussed.
AN ELECTRON-MIRROR INFRARED IMAGE CONVERTER USING VITREOUS SELENIUM-BISMUTH PHOTOCONDUCTING LAYERS
Authors: Bates C. W. , England L.
Published: January 2004

An electron-mirror infrared image converter using a 4-μ-thick layer of 95 at. % of Se and 5 at. % of Bi as both mirror and target has been constructed. Preliminary measurements indicate that the device has a sensitivity of 0.13 μA per μW per cm2 at a wavelength of 9600 Å.
MEASUREMENT OF TRANSITION SPEED OF JOSEPHSON JUNCTIONS
Authors: Stewart W. C.
Published: January 2004

The speed of the transition between the pair tunneling state and the single-particle tunneling state of Josephson junctions is in the nanosecond region for sufficiently large junction areas and low critical currents. The transition time varies with junction capacitance and inversely with critical current. The delay is calculated to be small compared to the transition time.
REGENERATIVE JOSEPHSON EFFECT DETECTOR FOR FAR-INFRARED RADIATION
Authors: Richards P. L. , Sterling S. A.
Published: January 2004

Experimental evidence is presented for feedback-narrowed far-infrared response of a point contact Josephson junction which is strongly coupled to a resonant cavity. The observed response shows high sensitivity (NEP ≲ 10−14W/Hz) and frequency selectivity (Q ≳ 103) and so is of value as a tunable narrow-band detector of millimeter and submillimeter wave radiation. The Werthamer-Shapiro theory of the nonlinear coupling of junction current to a resonant cavity has been extended to include the effect of applied radiation at the cavity resonance frequency and is shown to account for the feedback narrowing.
THIN FILM CHARACTERIZATION BY ELECTRON MICROPROBE AND ELLIPSOMETRY: SiO2 FILMS ON SILICON
Authors: Knausenberger W. H. , Vedam K. , White E. W. , Zeigler W.
Published: January 2004

A combined electron microprobe and ellipsometric study of thin SiO2 films on silicon provides a technique for compositional and morphological characterization of thin films.
INFRARED TRANSMISSION, MAGNETIC BIREFRINGENCE, AND FARADAY ROTATION IN EuO
Authors: Dimmock J. O. , Hurwitz C. E. , Reed T. B.
Published: January 2004

Infrared transmission, magnetic birefringence, and Faraday rotation have been measured in single crystals of EuO as a function of temperature and magnetic field in the wavelength region between 1.5 and 20 μ. The most transparent samples have an absorption coefficient at 20°K less than 0.5 cm−1 in the range between 2.5 and 9 μ and less than 1.0 cm−1 at 10.6 μ. At 20°K and 9 kG the Faraday rotation varies from 660 deg/cm at 10.6 μ to 3 × 104 deg/cm at 2.5 μ and over 105 deg/cm at 1.5 μ.
EFFECTS OF WIND ON THERMAL DEFOCUSING OF CO2 LASER RADIATION
Authors: Gebhardt Frederick G. , Smith David C.
Published: January 2004

A cw laser beam propagating in an absorbing medium may be spread, distorted, or deflected as a result of thermally self-induced refractive index gradients. In this paper the results of an experiment are reported where a wind, transverse to the direction of propagation of a CO2 laser beam, is imposed on an absorbing medium consisting of a mixture of air and propane. The experimental results show, in agreement with a simplified theoretical model, that the effect of the wind is (1) to deflect the laser beam into the wind for a certain range of wind velocities and (2) to reduce the thermal defocusing or blooming which results from the processes of thermal conduction and natural convection.
SPONTANEOUS REVERSE CURRENT DUE TO THE BRILLOUIN EMF IN A DIODE
Authors: Gunn J. B. , Staples J. L.
Published: January 2004

It has been shown by Brillouin that, to satsify the second law of thermodynamics, a diode at finite temperature must generate a dc signal which just compensates the current resulting from the rectification of thermal noise. It is shown that this signal should actually be observable (as a spontaneous reverse current) when the diode is connected to a resistor at a lower temperature than itself. A successful experiment to observe the signal is described.
HOLOGRAPHIC POLARIZATION RECORDING WITH AN ENCODED REFERENCE BEAM
Authors: Kurtz C. N.
Published: January 2004

Complete wavefront reconstruction, including polarization, is accomplished with an encoded reference beam, generated by using a single depolarizing diffuser as the reference beam source. The orthogonal polarization components of the object wave are encoded by different random wavefronts because of the scattering properties of the depolarizing diffuser.
SHEARING INTERFEROMETRY BY WAVEFRONT RECONSTRUCTION USING A SINGLE EXPOSURE
Authors: Mallick S. , Roblin M. L.
Published: January 2004

Wavefront reconstruction techniques are used to produce a shearing interferogram of an object. The desired shear of the object is produced by birefringent elements which make it possible to record simultaneously two holograms on a photographic plate. This avoids the errors due to the instability of the recording apparatus which are usually present when two exposures are made successively. The method is applicable to stationary phenomena and to those transient phenomena which change inappreciably during the time of exposure.
DETECTION OF PHOTON—PHOTON SCATTERING IN KD2 PO4
Authors: Auth D. C. , Mayer W. G. , Thaler W. J.
Published: January 2004

The interaction of two source-independent, noncollinear electromagnetic waves of widely differing quantum energies intersecting in a nonlinear solid has been observed. The scattering phenomenon has been verified by measuring angular diffraction and frequency analyzing the resultant photon beam.
COMPLEX SPATIAL FILTERING BY HOLOGRAPHIC FOURIER SUBTRACTION
Authors: Bromley Keith , Monahan Michael A. , Bryant John F. , Thompson Brian J.
Published: January 2004

A complex spatial filtering technique capable of subtracting two, complex, two-dimensional functions in real-time has been produced. The filter is a Fourier-transform hologram reconstructed with both the reference and object beams.
GAIN MEASUREMENTS IN A FLUID MIXING CO2 LASER SYSTEM
Authors: Cool Terrill A. , Shirley John A.
Published: January 2004

Small-signal gain coefficients for the P(18) vibration—rotation transition of CO2 at 10.57 μ have been measured in a high-velocity gas flow system utilizing the rapid mixing of vibrationally excited N2 with initially unexcited CO2. These measurements demonstrate that very high gain coefficients which are approximately independent of dimensions transverse to the flow can be realized in high-speed flow systems.
SATURATED OPTICAL ABSORPTION THROUGH BAND FILLING IN SEMICONDUCTORS
Authors: Zitter Robert N.
Published: January 2004

If a monochromatic light beam absorbed by a semiconductor generates enough carriers to fill band states up to and including those of the optical transition, the optical absorption will be saturated and a condition of transparency should result. Analysis shows that in this regime the absorption coefficient varies inversely with light intensity.
RESISTIVITY OF rf SPUTTER-THINNED ALUMINUM FILMS
Authors: Mayadas A. F. , Tsui R. T. C. , Rosenberg R.
Published: January 2004

It is shown that relatively thick (10 000-Å) films of aluminum thinned by sputter-etching exhibit an increase in both the room-temperature and helium-temperature resistivities, and that this increase is too large to be explained in terms of the Fuchs (thickness) size effect or by changes in the specular scattering probability p. A part of the increase in the helium-temperature resistivity anneals out after 2 h at 250°C but a large increment remains. It is suggested that topographic and structural changes in the films may be responsible.
FREQUENCY-SHIFTING METHOD OF EXCITING A PLASMA IN A RESONANT CAVITY
Authors: Halverson S. L. , Hatch Albert J.
Published: January 2004

A new method of obtaining a high-density plasma (n ∼ nc0) in a resonant cavity is described. The method is to increase the frequency of the exciting microwave power source by as much as ∼ 10% while keeping the input microwave power constant and maintaining an impedance match between the source and the cavity. Density increases of the order of seven-fold have been obtained in this way. The result is explained mainly on the basis that the power loss in the impedance-matching network decreases as the excitation frequency is increased.
PHOTOCONDUCTIVITY OF PHOTOCHROMIC Gd:CaF2
Authors: Heyman P. M.
Published: January 2004

The photoconductivity of photochromic Gd:CaF2 was studied and it was found that the spectra obtained favor a model which supposes charge transfer via the conduction band.
THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING
Authors: Thompson D. A. , Barber H. D. , Mackintosh W. D.
Published: January 2004

Experiments are described in which the energy spectra of 1-MeV He+ ions backscattered 150° from a silicon surface have been used to identify and measure the contamination on the surface. Contamination from hydrofluoric acid solutions containing gold and copper in concentrations ranging from 0.1 to 100 parts per million was studied. Less than one half a monolayer of contaminant was easily resolved and identified. Coverages of this order were obtained from solutions containing 0.1 ppm of the contaminant.
DYNAMIC MODE SURFACE WAVES ON MAGNETIZED YIG AND FERRITE RODS
Authors: Tao T. F. , Tully J. W. , Schott F. W.
Published: January 2004

Electromagnetic surface waves on magnetized single crystalline YIG and polycrystalline ferrite rods were studied. In particular, the dynamic mode surface waves, which do not exist in the magnetostatic analysis, were measured by the disturbing body technique in a surface wave resonator. The measured results agree very well with the exact analysis. We believe this is the first report in which the existence of dynamic mode surface waves is experimentally demonstrated.
ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS
Authors: Sigmund P.
Published: January 2004

The validity of the Kinchin-Pease formula is re-examined on the basis of recent progress in the theory of collision cascades and irradiation experiments on semiconductors and metals.
A TEMPERATURE-INDEPENDENT CONDUCTING STATE IN TETRACENE THIN FILM
Authors: Szymanski A. , Larson D. C. , Labes M. M.
Published: January 2004

Anomalous electrical conductivity phenomena have been observed in thin tetracene films sandwiched between metal electrodes. The resistivity of the tetracene layer is observed to change from a high value (``off state'') to a low value (``on state'') upon the application of voltage. In the ``on state'' the resistivity is both temperature insensitive and photoinsensitive. A preliminary interpretation of this behavior is presented.
OBSERVATION OF LOCALIZED RADIATION DAMAGE IN SILICON
Authors: Sigmon T. W. , Gibbons J. F. , Norris C. B.
Published: January 2004

In this experiment 2.8-MeV protons have been implanted into single-crystal 〈111〉-oriented silicon at room temperature. Measurements of the damage created as a function of proton fluence show a linear dependence for fluences from 8.2 × 1011 to 4 × 1013 protons/cm2. The resulting lattice defects are found to be positively charged in the presence of a high electric field. The defect introduction rate is found to be 9.1 × 10−3 net (+) defects/2.8-MeV proton. Carrier trapping effects of the damage in low to medium electric fields are negligible to within the sensitivity of the experiment. The technique for making the above measurements is explained in detail.
MOTION PICTURE HOLOGRAPHY
Authors: Jacobson A. D. , Evtuhov V. , Neeland J. K.
Published: January 2004

An experiment to record a holographic motion picture is described. The source of illumination is a cw ruby laser operated in the repetitively Q-switched mode. The film was recorded at the rate of 20 frames per second on 100 ft of 70-mm film, transported by a conventional 70-mm sequential-still camera. The subject of the movie was a group of tropical fish.
MODE INTERACTIONS BETWEEN THE 4881- AND 5147- Å LINES IN Ar+ LASERS
Authors: Statz H. , deMars G. A. , Tang C. L.
Published: January 2004

It is shown that oscillation in Ar+ on the 4881-Å line produces polarization source terms in the region of the 5147-Å oscillation. These source terms may profoundly influence the mode spectra and the power output of that line. Certain earlier experimental results may be understood in terms of these concepts. We also give further support to the presented mechanism through new experiments.
PLASMA ANODIZATION OF GERMANIUM
Authors: O'Hanlon John F.
Published: January 2004

A model is presented for the measurement of the voltage drop across a plasma anodized germanium film. This model proposes that the potential at the plasma—oxide interface is controlled by the plasma. From this model the anodization constant of germanium has been determed to be 31 Å/V.
SULFUR DIOXIDE SUBMILLIMETER LASER
Authors: Hard Thomas M.
Published: January 2004

A mixture of 0.4-Torr SO2 with 0.4-Torr He lases at 70.98, 66.14, 51.89, and 46.44 cm−1 when excited by a pulsed discharge. The previous report of cw oscillation on the first and the third of these lines is confirmed.
IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN SILICON
Authors: Fang P. H. , Iles P.
Published: January 2004

A shift of about 100°C is observed in the isochronal annealing temperature of the dominant annealing stage in p-on-n silicon solar cells with a heavy donor concentration of 1017 cm−3 in the n region and low oxygen concentration in the crystal.
CURIE-POINT WRITING OF MAGNETIC HOLOGRAMS ON MnBi
Authors: Mezrich R. S.
Published: January 2004

Reversible phase holograms have been made on thin films of MnBi by Curie-point writing. Magnetic holograms are formed when the interference pattern, created by conventional holographic techniques, heats the film above its Curie temperature, causing a magnetic domain pattern that corresponds to the interference pattern. The magnetic hologram can be nondestructively read out, without the use of polarizers or analyzers, by means of either the Faraday or Kerr magneto-optic effect. The hologram can be erased by application of a magnetic field.
FAR-INFRARED LASING IN H2S, OCS, AND SO2
Authors: Hassler J. C. , Coleman P. D.
Published: January 2004

Twenty-four lasing lines have been found in an H2S laser in the range 33 to 225 μ, three lines in SO2 at 141, 151, and 215 μ, and two lines in OCS at 123 and 132 μ. Comparing H2S to H2O, the pulse power outputs are about equal and the lines about as numerous. However, while the H2O lines essentially lase during the exciting 5-μsec current pulse, the H2S lines turn on about 20–30 μsec after the 5-μsec current pulse and last for 20 to 100 μsec.
TRANSIENT AND STEADY STATE THERMAL SELF-FOCUSING
Authors: Carman R. L. , Mooradian A. , Kelley P. L. , Tufts A.
Published: January 2004

Self-focusing of a cw argon laser beam due to absorptive heating in glass is reported here, with particular emphasis on the time dependence.
PRELIMINARY EVIDENCE FOR SELF-FOCUSING IN GAS BREAKDOWN PRODUCED BY PICOSECOND LASER PULSES
Authors: Alcock A. J. , DeMichelis C. , Korobkin V. V. , Richardson M. C.
Published: January 2004

An investigation of the sparks produced by picosecond pulses from mode-locked Nd:glass and ruby lasers indicates the existence of breakdown regions of diameter less than 5 μ. These results support the hypothesis that self-focusing of the beam may be involved in the breakdown process.
DETERMINATION OF ULTRASHORT PULSE WIDTHS BY TWO-PHOTON FLUORESCENCE PATTERNS
Authors: Harrach R. J.
Published: January 2004

The extent that characteristics of intense, ultrashort duration pulses can be determined using the two-photon fluorescence (TPF) display technique is examined within the framework of a simple model of partial laser mode-locking. It is found that the contrast ratio in the TPF pattern can give a reliable estimate of the degree of mode-locking, thereby allowing the fraction of laser beam energy contained in intense pulses and the width of these pulses to be inferred. However, the width of the peak in the TPF pattern varies nonmonotonically with the width of the pulses, and is not a sensitive measure of pulse width. It is argued that a direct measurement of the laser beam intensity profile by a relatively low-resolution photodiode-oscilloscope system gives a misleading estimate of the intense pulse content of the beam.
TYPE CONVERSION AND p-n JUNCTION FORMATION IN ION-IMPLANTED ZnTe
Authors: Hou S. L. , Beck K. , Marley J. A.
Published: January 2004

Type conversion and p-n junction formation, produced by the implantation of 400-keV F+ ions into p-type ZnTe, have been confirmed by the thermal probe test, photovoltaic effect, I-V characteristics, Hall effect, and EPR results.
LARGE NONLINEAR OPTICAL COEFFICIENT AND PHASE MATCHED SECOND HARMONIC GENERATION IN LiIO3
Authors: Nath G. , Haussühl S.
Published: January 2004

The second harmonic of a Nd laser has been produced in LiIO3 in a phase matching direction of 30° to the c axis with high conversion efficiency. The nonlinear optical coefficient t31 is among the highest so far reported for phase matchable substances using λ = 1.06 μ. LiIO3 can be grown from water solutions with excellent optical quality.
HOLOGRAM RECORDING ON PHOTOPOLYMER MATERIALS
Authors: Close D. H. , Jacobson A. D. , Margerum J. D. , Brault R. G. , McClung F. J.
Published: January 2004

A photosensitive material based on photo-induced polymerization has been used to record holograms. Exposure of 1 to 30 mJ/cm2 at 0.694 μ were followed by rapid optical, dry processing with ultraviolet radiation. Good resolution and diffraction efficiencies of up to 45% into the first order were observed.
QUANTUM EFFECTS IN ELECTRON CYCLOTRON RESONANCE IN InSb
Authors: Apel J. R. , Poehler T. O. , Westgate C. R.
Published: January 2004

Measurements of electron cyclotron resonance in n-type InSb at 4.2°K have been conducted using far-infrared laser emission lines at 337 and 311 μm from HCN and 119 μm from H2O. Well-resolved resonance lines were observed for each wavelength with the apparent effective mass dependent on the magnetic field strength. At 119 μm, a number of subsidiary maxima was observed on the low field side at ωc = ω(laser)/n where n = 1, 2, …, 6, apparently due to intraband transitions to higher Landau levels.
PROPAGATION AND DIMENSIONAL RESONANCES OF HELICON-LIKE WAVES IN POWDERED SEMICONDUCTORS AND SEMIMETALS
Authors: Galeener Frank L. , Furdyna Jacek K.
Published: January 2004

Measurements of microwave transmission through inhomogeneous solid-state magnetoplasmas formed by InSb, InAs, HgTe, and HgSe powders are discussed and their main features quantitatively explained in terms of a scattering model. The theory asserts that propagation is dominated by magnetic dipole interactions with the grains, caused by dimensional resonances of helicon-like waves within the particles. These resonances are used to explain the anomalous sense of the strong gyromagnetic behavior observed in these multiply scattering media. Applications in several fields seem likely, including the construction of nonreciprocal microwave devices.
EFFICIENT HOLOGRAPHY USING TEMPORAL MODULATION
Authors: Macovski Albert
Published: January 2004

A method is shown of recording a hologram without spatially offsetting the reference beam. The temporal frequency of the reference beam is offset and the the resultant intensity pattern is scanned using a television camera. The desired conjugate image signals are separated from the undesired terms using a bandpass filter on the electrical signal. This method significantly reduces the resolution requirements of the hologram recorder.
SHIFT OF A MERCURY LINE BY A HIGH POWER LASER PULSE
Authors: Platz Peter
Published: January 2004

Light from high-power lasers perturbs the energy levels of atoms by virtual interaction. The first quantitative measurements of this effect are presented. A light pulse from a Nd laser with a power of 150 MW/cm2 shifts the 5461-Å line of mercury towards smaller wavelengths by 0.1 Å.
OBSERVATION OF LOVE WAVE PROPAGATION AT UHF FREQUENCIES
Authors: Matthews H. , van de Vaart H.
Published: January 2004

Observation of the propagation of 285-MHz Love waves is reported. The transducers and propagating structure are described.
INTERACTION MECHANISMS OF LASER TRANSITIONS IN ARGON AND KRYPTON ION LASER
Authors: Ferrario A. , Sironi A. , Sona A.
Published: January 2004

A mechanism is proposed to explain anomalous interaction effects between laser lines in Ar+ and Kr+. Radiative transitions connecting the upper level of the directly modulated laser line and the lower level of the cross-modulated line are responsible for the anomalous behavior. This mechanism is supported by the presence or the absence of reciprocity in the anomalous interaction related with the presence or the absence of oscillation on the connecting transition, by the strong ``out-of-phase'' cross modulation on the connecting transition, and by the lack of upper-level pumping processes suitable for explaining the anomalous interaction.
SIMPLE ANALYTIC EXPRESSIONS FOR AM AND FM MODE-LOCKED PULSES IN HOMOGENEOUS LASERS
Authors: Siegman A. E. , Kuizenga D. J.
Published: January 2004

Simple expressions for the mode-locked pulses induced by either intracavity phase or amplitude (FM or AM) modulation in a homogeneous laser are developed by following a Gaussian pulse through one pass around the laser cavity. The predicted pulsewidth in either case is τp ∼ (g0/δ)1/4 × (ΔfaxialΔfatomic)−1/2, where g0 = saturated single-pass excess laser gain, δ = single-pass modulation index, Δfaxial = axial mode spacing, and Δfatomic = atomic linewidth. The FM case also shows a frequency `chirp' equal to the pulsewidth. Experiments with the FM case in a Nd:YAG laser show excellent agreement with the analysis.
PHONON FREQUENCY SPECTRA OF TRAVELING ACOUSTOELECTRIC DOMAINS IN CdS
Authors: Hakki B. W. , Dixon R. W.
Published: January 2004

Optical beam probing using Bragg diffraction from traveling acoustic domains in CdS has revealed a direct correlation between the frequency of maximum phonon intensity and the total integrated acoustic intensity. At the point of initiation of the acoustic domain the frequency of maximum phonon intensity was equal to that for maximum small signal gain, but as the domain propagated towards the anode the total acoustic intensity ΦT increased and the frequency fm of maximum phonon intensity decreased according to the relation ΦT ∞ fm−4. After a sufficient distance of travel the acoustic intensity saturated and the peak phonon frequency became invariant. It is suggested that the drop in phonon frequency and its correlation with total phonon intensity are related to the trapping of free carriers by acoustic phonons.
LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GaAs:Ge
Authors: Burnham R. D. , Dapkus P. D. , Holonyak N. , Rossi J. A.
Published: January 2004

Data are presented showing that p-type GaAs:Ge can be lased on band-to-band, conduction band-to-acceptor impurity, or simultaneously on both transitions. Recombination transitions to the Ge acceptor impurity are well separated in energy from those to the neighboring band edge, and in spectral width (spontaneous recombination) are in reasonable agreement with previous theory.
INFLUENCE OF n-TYPE DOPANTS ON THE LATTICE LOCATION OF IMPLANTED p-TYPE DOPANTS IN Si AND Ge
Authors: Eriksson L. , Fladda G. , Björkqvist K.
Published: January 2004

The orientation dependence of the backscattering yield of 1.8-MeV carbon ions has been used to determine the lattice location of group III and V elements implanted into Si and Ge at 30 keV and ∼350°C. It is shown that the lattice location of p-type dopants is affected by the presence of n-type dopants in the substrate. For example, when T1 is implanted alone into Si a large interstitial component is observed. For a ``mixed'' T1 and As implantation, however, the substitutional T1 component is enhanced at the expense of the interstitial component.
MAGNETIZATION OF SINGLE-CORE, MULTI-STRAND, AND TWISTED MULTI-STRAND SUPERCONDUCTING COMPOSITE WIRES
Authors: Iwasa Y.
Published: January 2004

Magnetization measurements performed on three types of Nb–Ti superconducting composite wire have shown that twisted multistrand wire not only is very stable but also has the smallest magetization and thus is the most suitable for ac applications.
FIELD-THEORETICAL TREATMENT OF PHOTOMIXING
Authors: Teich M. C.
Published: January 2004

A quantum theory of photomixing is developed in which double- and sum-frequency signal components do not appear, when hν ≫ kT, in distinction to the classical theory. Optimum sinusoidal photomixing occurs for a first-order coherent total incident field with stationary constituent beams. The heterodyne process may be viewed as the annihilation of a single nonmonochromatic photon. An interpretation is given to temporal interference experiments at the single-photon level recently performed by Radloff.
EXPERIMENTAL CONFIRMATION OF SELF-TRAPPING FROM THE DEPENDENCE OF SELF-MODULATION ON PROPAGATION DISTANCE
Authors: Denariez-Roberge M. M. , Taran J-P. E.
Published: January 2004

The self-trapping interpretation of apparent small-scale filaments has recently been questioned. Experiments were therefore undertaken to test whether the observed filamentary structure is caused by self-trapping. We found that the filaments propagated over distances of the order of a few centimeters. To confirm this result, the spectral broadening in filaments versus propagation distance was determined. These observations give a nonlinear index change which agrees with the index change calculated from the observed diameter.
THE NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS-RICH GALLIUM ARSENIDE PHOSPHIDE
Authors: Dean P. J. , Faulkner R. A.
Published: January 2004

The localization energy of excitons at N isoelectronic substituents in GaAsxP1−x has been determined from optical absorption spectra for x ≲ 0.2. The results indicate that the binding energy of the N-induced electron state associated with the X1 conduction band minima in GaAs may be relatively large, ∼0.08 eV. However, this state is still more than 0.3 eV above the lowest minimum at Γ1c. It is likely that there is no bound state associated directly with the Γ1 conduction band minimum.
CURRENT OSCILLATIONS BY TWO BULK NEGATIVE-RESISTANCE EFFECTS IN PHOTOEXCITED GaAs
Authors: Tokumaru Yozo
Published: January 2004

High-frequency (MHz) and low-frequency (kHz) current oscillations are found in photoexcited long GaAs diodes; the threshold field for the former is about 4.0 × 103 V/cm, and for the latter is about 1.5 × 103 V/cm. At an average applied field >4 × 103 V/cm, high-frequency oscillation occurs first and continues for a while, then low-frequency oscillation takes place. Experimental results suggest that the origin of high- and low-frequency oscillation are different from each other; the former is the two-valley transfer effect, and the latter the field-dependent trapping effect.
ELECTRON EMISSION FROM A ``COLD-CATHODE'' GaAs p-n JUNCTION
Authors: Williams B. F. , Simon R. E.
Published: January 2004

Electron emission into vacuum has been observed from a forward-biased Cs- and O-treated GaAs p-n junction. The device was operated at room temperature with dc bias voltage. The effective efficiency of the device (emission current divided by internal diode current eligible for emission) was 0.05%, while the over-all efficiency of the device (emission current divided by total diode current) was 10−6. The low over-all efficiency is explained in terms of sample geometry and surface activation.
NEGATIVE CAPACITANCE IN AMORPHOUS SEMICONDUCTOR CHALCOGENIDE THIN FILMS
Authors: Vogel R. , Walsh P. J.
Published: January 2004

Certain amorphous materials exhibit rapid electrical switching. The variation in their capacitance was evaluated as a function of temperature and electric field in the high-resistance state. The zero-field capacitance follows a Curie-Weiss law above room temperature. At low temperatures, and at fields near the threshold of switching for higher temperatures, the open-circuit incremental ac capacitance becomes negative.
PASSIVE Q-SWITCHING OF A CO2 LASER USING A MIXTURE OF SF6 AND C2F3Cl GASES
Authors: Krupke William F.
Published: January 2004

Passive Q-switching of a CO2 laser operating at 10.6 μ has been achieved with a mixture of sulfur hexafluoride and chlorotrifluoroethylene gases contained in a gas cell placed within the resonator. Use of chlorotrifluoroethylene gas to suppress spurious oscillations eliminates the need to use dispersive optical elements in the resonator.
POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON
Authors: Davies D. Eirug
Published: January 2004

Isochronal annealing studies have been conducted on implanted boron and phosphorus layers in silicon. It is shown that the sheet conductance rise on annealing is dependent on the temperature at which the silicon is maintained during implantation. From the standpoint of conductance, low-temperature implanting is to be favored.
MICROWAVE DIELECTRIC CONSTANT OF Al2O3 AT 375 KILOBARS
Authors: Hawke R. S. , Keeler R. N. , Mitchell A. C.
Published: January 2004

Microwave techniques were used to measure the conductivity and dielectric constant of shock-compressed Al2O3. At a pressure of 375 kbar, the dielectric constant increased and the conductivity remained negligible. From the dielectric constant, the molar polarizability was calculated and found to decrease.
CROSS SATURATION OF 10.6-μ SIGNALS IN SF6
Authors: Abrams R. L. , Dienes A.
Published: January 2004

Measurements of the nonlinear interaction in SF6 of two linearly polarized CO2 laser signals as a function of the angle between the two planes of polarization have been made. The angular dependence of the interaction suggests that several SF6 vibrational-rotational transitions are responsible for 10.6-μ absorption.
ENHANCED PLASMA HEATING IN LASER-INDUCED GAS BREAKDOWN AT THE SHOCK FRONT OF A BLAST WAVE
Authors: Ahmad N. , Key M. H.
Published: January 2004

A technique is described for limiting the axial propagation of the absorption zone in laser-induced gas breakdown. A theoretical model suggests that the resulting localized energy deposition should allow heating of the plasma to temperatures comparable with those obtained when a focused laser beam heats small particles in vacuum. Preliminary experimental results confirm the localization of the absorption zone.
SINGLE-CAVITY NONCOLLINEAR OPTICAL PARAMETRIC OSCILLATION
Authors: Falk Joel , Murray James E.
Published: January 2004

We report noncollinear single-cavity optical parametric oscillation with energy conversion of 45% using LiNbO3 pumped with a ruby laser. A new method of tuning is employed. Partial compensation for Poynting vector walk off is provided.
OSCILLATORY MAGNETO-CURRENT IN FORWARD BIASED SEMICONDUCTOR JUNCTIONS
Authors: Kitchen W. J.
Published: January 2004

An oscillatory magneto-current has been observed in forward biased p-n junctions of silicon and germanium, at both liquid nitrogen and room temperatures.
FLUX PINNING BY GRAIN BOUNDARIES IN SUPERCONDUCTING NIOBIUM-ZIRCONIUM ALLOYS
Authors: Love G. R. , Koch C. C.
Published: January 2004

The influence of grain, subgrain, or dislocation cell size d or superconducting critical flux gradient dB/dr was investigated in a single phase Nb-33 at. % Zr alloy. By appropriate heat treatments, d was varied from 0.25 to 1500 μ. A monotonic decrease of more than one hundred-fold in dB/dr accompanied this thousand-fold increase in d. At a given d, the maximum increase in dB/dr obtained from precipitation of a second phase does not exceed a factor of about 30.
EFFECT OF ADDED ELECTRONS ON THE rf MAGNETIC SUSCEPTIBILITY OF A METAL
Authors: Ishibashi Y. , Kushida T. , Stadler H. L. , Zacmanidis P. J.
Published: January 2004

The rf magnetic susceptibility of three iron-nickel alloys has been observed to change about one part in 104 due to space charge induced at a blocking contact.
TEMPERATURE DEPENDENCE OF R
HS IN ALUMINUM-IMPLANTED LAYER IN n-TYPE SINGLE CRYSTAL SILICON
Authors: Itoh Tadatsugu , Inada Taroh , Ishiki Masao , Menabe Kenshi
Published: January 2004

The effect of subsequent annealing treatment on electrical properties of aluminum-implanted silicon was studied by means of Hall-effect and sheet-resistivity measurements. Implanted silicon samples were annealed under various schedules, for example, isochronal annealing for 20 min, isothermal annealing at 800°C, etc. A sign conversion of ``sheet Hall coefficient (RHS)'' in the implanted layer of ``over annealed'' sample was observed below room temperature. However, hot probe measurements on the same sample showed the existence of p-type layer, and the photo voltaic effect was also observed indicating that p-n junction existed.

We have tentatively attempted to explain that these anomalous electrical properties were due to precipitation of implanted aluminum atoms along crystal imperfections.
A TUNABLE STIMULATED RAMAN OSCILLATOR
Authors: Gelbwachs J. , Pantell R. H. , Puthoff H. E. , Yarborough J. M.
Published: January 2004

We report the first observation of tunable stimulated Raman emission. A Q-switched ruby laser was used to excite the A1 symmetry 248-cm−1 polariton mode in a LiNbO3 crystal. The crystal, at room temperature, was placed in a resonator external to the laser cavity which was tuned to the Stokes frequency. It was possible to vary the Stokes frequency by altering the angle between the pump beam and the axis of the resonator. Stimulated Raman scattering from other polariton modes (152 cm−1, 628 cm−1) which are potentially tunable was observed. We also report the first observation of stimulated anti-Stokes emission from a polariton mode.
SPONTANEOUS SELF-PULSING AND CAVITY DUMPING IN A CO2 LASER WITH ELECTRO-OPTIC Q-SWITCHING
Authors: Bridges T. J. , Cheo P. K.
Published: January 2004

Spontaneous self-pulsing has been observed in a 10.6-μ CO2 laser, Q-switched in ≈10 nsec by an internal GaAs electro-optic cell, with no saturable absorber present. Each Q-switched event consists of a train of ten or more 20-nsec pulses with a total duration of ≈400 nsec in a single P(20) line. Electro-optic dumping of the cavity energy near the peak of oscillation gives a single output pulse of ≈10-kW peak power and 25-nsec duration. A numerical comparison is made with the circulating π pulse theory of spontaneous pulsing.
OBSERVATION OF THE IDEAL GENERATION-RECOMBINATION NOISE SPECTRUM AND SPECTRA WITH VOLTAGE VARIABLE RELAXATION TIME IN GOLD-DOPED SILICON
Authors: Sah C. T. , Yau L. D.
Published: January 2004

Observation of the ideal single time constant generation-recombination noise spectrum is achieved over four decades of frequency and five decades of noise power for the first time by completely depleting the electrons and holes in the semiconductor substrate with a high electric field. The measured time constant provides another accurate datum of the thermal emission rate of electrons and holes. By decreasing the applied electric field, nonideal power spectra result whose characteristic frequency increases due to the presence of electrons and holes in the silicon substrate.
EMISSION OF HIGH-ENERGY ELECTRONS DURING ALLOY-EVAPORATION PROCESSES ON HOT METAL FILAMENTS
Authors: Hoenig Stuart A. , Pope Richard A.
Published: January 2004

Hot metal filaments are often used to evaporate another metal for deposition of thin films. If the metal being evaporated can alloy with the filament, a significant number of high-energy electrons are emitted during the alloying-evaporation process.
InGaAs–CsO, A LOW WORK FUNCTION (LESS THAN 1.0 eV) PHOTOEMITTER
Authors: Williams Brown F.
Published: January 2004

The photoemission and thermionic emission from heat-treated In0.3Ga0.7As coated with very thin layers of Cs and O have been measured. The photothreshold occurred at about the band gap of 0.95 eV and the thermionic work function was determined to be 0.7 ± 0.1 eV.
EFFECTS OF HEAT CLEANING ON THE PHOTOEMISSION PROPERTIES OF GaAs SURFACES
Authors: Liu Y-Z. , Moll J. L. , Spicer W. E.
Published: January 2004

Heat cleaning in ultrahigh vacuum, when carried out properly on practical GaAs surfaces, has achieved very high quantum efficiency (∼600 μA/lumen) after activation with Cs and O2. This is better than 50% of the best UHV cleaved GaAs. The inherent limitations of heat cleaning are the possibilities of dopant out diffusion and loss of As. Our experiments are consistent with out diffusion of Zn at about 650°C, and a sufficiently small loss of As at this heating temperature so as to result in negligible As vacancies near the surface of the crystal
INTERACTION OF GUNN DOMAINS WITH Ga71 NUCLEI IN GaAs
Authors: Mahler Robert J.
Published: January 2004

The application of an electric field of more than 3.2 kV/cm across n-type GaAs results in the formation of high-voltage approximately triangular domains which travel across the sample with a frequency determined by the length of the sample. A Ga71 nuclear spin transition frequency was brought within the domain frequency bandwidth and an interaction between the domains and the nuclei was observed.
FILAMENTARY CONDUCTION IN SEMICONDUCTING GLASS DIODES
Authors: Pearson A. David , Miller C. E.
Published: January 2004

Electrical switching in thin-film As2SeTe2 semiconducting glass diodes with thin-film electrodes has been studied. The formation of a liquid phase and what appear to be conducting filaments have been observed and recorded. Current densities > 104 A cm−2 have been estimated in the filaments.
GENERATION OF A MONOMODE GIANT PULSE LASER BY COHERENT PUMPING
Authors: Briquet G. , Jego J. M. , Terneaud A.
Published: January 2004

A 1-nsec giant pulse is generated from a neodymium-doped glass by using a 5300 Å pulse as pumping source (15 nsec, 0.3 J). The active volume is only 3 × 10−3 cm3 and spectral linewidth of the emission is less than 0.5 Å.
THE UPPER CRITICAL FIELD H
c2 OF NbN FILM PREPARED BY REACTIVE SPUTTERING
Authors: Saito Yukinori , Anayama Takeshi , Yasohama Kazuhiko , Yasukouchi Ko , Onodera Yutaka
Published: January 2004

The upper critical field Hc2 of about 200 kOe was obtained for niobium nitride films prepared by reactive sputtering. Electron microscopy was used to determine the crystal structure. It was shown that the electron diffraction patterns of these films were that of the NbN with the NaCl crystal structure.
PASSIVE MODE LOCKING OF A PULSED Nd:YAG LASER
Authors: Clobes A. R. , Brienza M. J.
Published: January 2004

We report the passive mode locking of a repetitively pulsed Nd:YAG laser in which complete mode-locking is established by the 100% modulation of the output pulse train and a two-photon fluorescence pulse width measurement yielding a contrast ratio of 3:1.
LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS
Authors: Sonnenberg H.
Published: January 2004

The photoemission threshold of GaAs–Cs–O is explained on the basis of a heterojunction model composed of GaAs and Cs2O. The concepts involved in this model are generalized to an arbitrary heterojunction, leading to the result that it is, in principle, possible to obtain surfaces with work function lower than 0.5 eV. If deposited on an appropriate substrate, these surfaces offer the exciting possibility of highly efficient photoemission well into the infrared. A possible practical negative-electron-affinity photoemitter with efficient response to 1.4 μ is suggested.
MODES OF PROPAGATING LIGHT WAVES IN THIN DEPOSITED SEMICONDUCTOR FILMS
Authors: Tien P. K. , Ulrich R. , Martin R. J.
Published: January 2004

We report theory and experiment on modes of propagating light waves in deposited semiconductor films. The modes are excited by a novel prism-film coupler which is also used for the measurement of their phase velocities. Up to 50% of the incident laser energy has been fed into a single mode of propagation. The positions and linewidths of the modes, the wave intensity inside the film, and a dramatic view of the mode spectrum displayed by the scattered light are discussed in detail.