bluuebunny/crossref_metadata_2025 huggingface dataset:
Impurities in Thin Films Produced by Ion Beam Sputtering
Authors: Bhattacharya R. S.
Published: November 2005

Thin films of Si are prepared by 5–8 keV Ar+ and Xe+ ion beam sputtering. Films with thicknesses between 250 and 2000Å are deposited on Si (100) substrates which were biased either to ground or +2-5 kV potentials to repel reflected and sputtered Ar+ and Xe+ ions. RBS and PIXE analyses are carried out in order to determine the impurity contents of the films. The films have been found to contain either Ar or Xe depending upon the beam used and a considerable amount of other impurities which have been identified as Fe, Cr and Ni in the same proportion as in a stainless steel. It is concluded that the impurity from the ion beam is an inherent drawback in the ion beam sputtering technique of thin film deposition and can only be avoided by using the same type of ion as the target material. The source of the latter impurities could be identified as the ion gun itself, the walls of which are sputtered and transmitted to the film via the target.
Reaction at Fe-Sn Interface Studied by Mössbauer Spectroscopy
Authors: Shinjo Teruya , Hosoito Nobuyoshi , Hine Shiro , Takada Toshio
Published: November 2005

The behaviors of Fe-Sn interfaces were studied by means of Mossbauer spectroscopy. The samples were prepared by UHV deposition and 57Fe was used as a microprobe at the interface region. It was found that the reaction between Fe and Sn takes place even at room temperature and has two stages. The initial product was non-magnetic at 4.2 K; subsequently, microcrystals of FeSn2 gradually formed.
Frequency Stabilization of a PbSnTe Laser on a Methane Line in the v4 Band
Authors: Ohi Misao
Published: November 2005

A PbSnTe diode laser in a small glass dewar for liquid nitrogen cooling was utilized for observation of absorption lines of methane in the v
4 band around 7.7 µm. Some of the lines were identified and frequency differences between two lines were naeasured as well as the pressure broadening of the lines.
The PbSnTe laser was stabilized on one of the methane lines by controlling the laser drive current. Frequency stability of the laser was estimated by Allan variance and the minimum value of 4.3×10-11 was obtained at an averaging time of 15 s.
Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
Authors: Nakayama Hiroshi , Katsura Johji , Nishino Taneo , Hamakawa Yoshihiro
Published: November 2005

Electronic states of oxygen-related donors in CZ-Si crystals induced by heat treatment at 430°C have been investigated by Hall-effect and photoluminescence measurements. A characteristic change in the ionization energies of such heat-treatment induced oxygen-related donors has been observed, suggesting the formation of several species of oxygen clusters distributed in CZ-Si crystals. Photoluminescence spectra related to these oxygen-related donors reveal some new features characteristic of the luminescence from excitons localized at impurity pairs or clusters.
InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
Authors: Fukui Takashi , Horikoshi Yoshiji
Published: November 2005

InAsSbP-InAs superlattices were grown by organometallic vapor phase epitaxial growth. The superlattice periods were obtained by X-ray diffraction measurements. The compositional depth profiles were observed by Auger electron spectroscopy and simultaneous argon-ion sputter etching. The chemical interface layer width was measured to be less than 60 A for the superlattice with a 335 A period. The results suggest that organometallic vapor phase epitaxy is one of the most useful methods for the growth of high quality superlattices.
Helicon Waves in PbTe
Authors: Kanai Yasuo
Published: November 2005

The helicon waves in p- and n-type PbTe crystals under various values of static magnetic field were observed at 4.2°K by the oscillation method and the resonance method. The frequency of the helicon wave is proportional to the strength of the static magnetic field, in good agreement with theoretical prediction. By the resonance method the helicon waves with higher modes are clearly observed. The helicon waves in PbTe crystals of rather high purity are also observed by this method.
Magneto-Thermoelectric Power and Magnetostriction of FeNi3 Single Crystals
Authors: Minegishi Takeharu
Published: November 2005

The change in thermoelectric power due to magnetization of ferromagnetic substance, i. e. the magneto-thermoelectric power, and linear magnetostriction at given temperatures are measured on single crystals of Fe-Ni alloy (about 24% Fe). The single crystal behaviour of magneto-thermoelectric power in these f. c. c. crystals are similar to that of magnetostriction. The constants (E
m)100, (E
m)111 and λ100, λ111 which specify magneto-thermoelectric power and linear magnetostriction in the [100] and [111] directions, respectively, have been determined. The magneto-thermoelectric power depends on the orientation of the crystal axes and is always negative.
The numerical values obtained are as follows: (E
m)100=-0.84×10-6 volt/degree, (E
m)111=-0.53×10-6 volt/degree and λ100=8.4×10-6, λ111=1.3×10-6.
Structures des Oxydes de Niobium
Authors: Terao Nobuzo
Published: November 2005

The formation of the niobium oxides by heating thin films and the powder of Nb in various conditions has been followed by electron and X-ray diffractions. Numerous forms of Nb oxide are identified: Nb-(O) (solid solution), NbO
x
(tetragonal), Nb-O δ-form (hexagonal), γ-Nb2O5 (monoclinic) and α-Nb2O5 (monoclinic) are formed by heating in air at either atmospheric or reduced pressure; while, NbO
z
(tetragonal), NbO (cubic) and NbO2 (tetragonal) are formed only in air of reduced pressure. The transformation relations between these oxides are made clear. At first, the oxidation of Nb occurs through penetration of oxygen atoms into the metallic lattice of Nb. Then the structures of the oxides transform successively by rearrangement of niobium and the oxygen atoms. The transformation δ→γ can take place through a relatively small change in the atomic distribution, while the transformation γ→α occurs through a remarkable rearrangement of both kinds of atoms, passing two distinct intermediate stages. The δ-form, which has been considered hitherto to be a poorly crystallized state of the γ-Nb2O5, may be an oxide inferior to NbO2. The tetragonal form NbO2 has a super lattice derived from the rutile structure.
Study of Martensitic Transformation in Evaporated Iron-Nickel Alloy Films by Electron Microscopy and Diffraction
Authors: Nagakura Sigemaro , Kikuchi Makoto , Kaneko Yoshiaki , Oketani Shiguéo
Published: November 2005

Seven kinds of Fe-Ni alloy films (14.35∼27.1 at% Ni) 500, 1000 and 1500 Å thick were prepared by vacuum evaporation. The films were austenitized by heating and subsequently cooled in liquid nitrogen to induce the martensitic transformation. Electron microscope and diffraction studies showed that repeated twins parallel to (112)b.c.c. were produced. The mean twin plate thickness was 60 Å. The martensite-start temperature is much lower than that for the bulk material, and it falls not only with increasing nickel content but also with decreasing film thickness. The small crystal size of austenite in the evaporated films, which causes a strong interaction between the transformation dislocations and the crystal surfaces, in considered to be responsible for the suppression of the transformation.
Effects of the Collector Depletion Layer Width on the Characteristics of Drift Transistor
Authors: Nakahara Osamu , Goto Kazuyoshi , Mitani Toshio , Sunaguchi Tetsuro
Published: November 2005

Electric characteristics of the drift transistors having different width of nearly intrinsic base region between a given diffused layer and the collector region are experimentally investigated. It is found that the above width, which usually corresponds to that of the collector depletion layer at low level operation, has appreciable effects on the current dependence of the carrier transport characteristics represented by such parameter as f

T
or β0. These results are found to be explained fairly well in the light of the theory presented by C.T. Kirk who postulates the expansion of the neutral base width into the nearly intrinsic region at high level operation. It is also pointed out that more involved considerations on the transit velocity of carriers across the depletion layer seem necessary for the complete interpretation of the results on f

T
.
Electrical Properties of AIIBVI Compounds, CdSe and ZnTe
Authors: Tubota Hirosi
Published: November 2005

The electrical resistivities and the Hall coefficients are determined for stoichiometric, non-stoichiometric and impurity-doped CdSe and ZnTe crystals. From these observations it is concluded that the impurity centers contributing to the electrical conduction are Se-vacancies in CdSe and Zn-vacancies in ZnTe. It is shown that the first ionization energy of a Zn-vacancy is 0.035 eV and the second 0.25 eV. The band gap is estimated at 1.88 eV for CdSe, and 2.12 eV for ZnTe. The Hall mobility of ZnTe varies as T
-1.50 in the high temperature region. In addition, the behaviors of the contact between metals and CdSe are studied. In makes a good ohmic contact.
Arrangement of Dislocations in Iron Crystals Stretched in Tension
Authors: Yamashita Tadayoshi , Taneda Youji
Published: November 2005

Piled-up dislocations and dislocations forming cell structure in iron crystals are examined by transmission electron microscopy. It is found that the piled-up dislocations are observed in the crystals for single slip in the range of the appropriate amount of deformation, and that the cell structure is formed by intertwinning dislocations on different slip planes. Relation between the flow stress and the density of dislocations both piled-up and arranged in cell structure is discussed. The stress concentration factor acting on a leading dislocation among the piled-up dislocations is about 2 at room temperature, while the average number of the piled-up dislocations is as large as 7. The discrepancy between the stress concentration factor and the number of the piled-up dislocations will be caused by the relief of the stress due to cross slip. The existence of dislocations showing cross slip in the piled-up dislocations arranged in a row may verify the validity of the consideration.
Nondispersive X-Ray Spectrochemical Analysis using Nuclear Beta Ray Source
Authors: Enomoto Shigemasa , Mori Chizuo
Published: November 2005

A theoretical derivation to estimate the intensity of X-ray produced by nuclear beta ray excitation in pure or complex specimens is described. The purpose of the article presented is to presume the availability of radioactive beta ray source by nuclear data for analytical applications without the need of experimental process that is often subtle or difficult. The approach is verified by experimental demonstrations using a Pm-147 source and a thin NaI scintillation detector for analyzing binary alloys with the illustration of nondispersive X-ray spectroscopy.
Fluorescence of Solution Scintillators with Naphthalene as a Solvent
Authors: Kobayashi Shigeo , Hayakawa Sohachiro
Published: November 2005

This paper indicates the following items about solution scintillators with naphthalene as a solvent: a) Solute concentration dependence of fluorescence intensity in these systems follows the formula given by Kallmann and Furstet al.with respect of energy transfer in liquid scintillators. b) Measurements of fluorescence under excitation of different radiations can discriminate between solvent and solute quenching by addition of carbon tetrachloride. c) Pulse distribution curves are also investigated at an optimum concentration of each system. Some of them seem worthy of practical use.
Observations of Negative Resistance and Oscillation Phenomena in the Forward Direction of Point Contact Semiconductor Diodes
Authors: Kikuchi Makoto
Published: November 2005

Coherent oscillation has been found in the forward-biased point contact on n-type silicon and p-type germanium. It has been verified by subsequent experiments that the oscillation is correlated with the negative resistance phenomena. The occurrence of the negative resistance and oscillation phenomena is dependent on the choice of the material used for the metal point, and it is more difficult to observe these phenomena in n-type germanium and p-type silicon than in p-type germanium and n-type silicon.
Experimental observations of the negative resistance and related effects are mentioned. Although no definite model can be proposed at present, thermal effects and avalanche injection at low-high junction are ruled out from the possibilities for the explanation of the above mentioned results.
Dislocation and Crack Formation in Indented Germanium Single Crystals
Authors: Sugita Yoshimitsu
Published: November 2005

Deformation of germanium crystals by indentation is studied over temperature range between 25° and 600°C. As Allen showed, superficial damage, ring- and radial-crack are observed. However, as temperature increases occurrence of ring-crack is suppressed in contrast to radial-crack. A {110}-type crack is frequently observed at elevated temperatures. Results obtained are discussed with elastic theory of Herz problem. Stress required to produce a crack is 40–50 kg/mm2and slightly increases as temperature increases. The temperature at which macroscopic slip lines become to be observable is higher in heavily doped crystals than in high purity crystals, indicating that multiplication of dislocation is strongly affected by impurities. These modes of deformation confirm the results of bending experiment obtained by Suzuki.
Die Wirkung des Bleitetraäthyls auf die Zündung des n-Heptan-Luft-Gemisches in Stoßwellen
Authors: Terao Kunio
Published: November 2005

The ignition delay behind reflected shock waves was measured for a pure n-heptane/air mixture and one containing tetraethyl lead. The ignition probabilities were obtained, from which the activation energies of ignition reaction were calculated. The effect of lead on ignition is discussed by considering the differences in the ignition probabilities and activation energies between these two mixtures. It is suggested that lead does not effect the ignition by its chain breaking action but its oxidation.
Structural and Magnetic Properties of Copper-Substituted Manganese-Aluminum Alloy
Authors: Sugihara Makoto , Tsuboya Ichiro
Published: November 2005

Magnetic and structural properties of the tetragonal phase of ternary Cu (0–12.5 at%)–Mn(55–42.5 at%)–Al(45 at%) alloy have been studied in relation to binary 45Al-Mn alloy. The substitution of Cu to Mn-Al alloy reduces the tetragonality c/a of the tetragonal phase from 1.30 of the 45Al-Mn to 1.20 of the 10 at% Cu alloy, and then changes the structure to cubic at more than 10 at% Cu. An increase of Cu content also results in a decrease of the Curie temperature, of the coercive force and of the ratio of remanence to saturation magnetization.
Electron-Hole Scattering in Solids Exhibiting Band-Gap Impact Ionization
Authors: Steele M. C. , Tosima S.
Published: November 2005

For semiconductors showing band-gap impact ionization the density of electron-hole pairs can become high enough to lower the electron mobility significantly. It is shown that the observed drop in electron drift velocity in both InAs and InSb can be plausibly explained by the onset of such strong electron-hole scattering. The role of self-pinching as it affects the electron-hole scattering is considered in detail.
Effect of Inelastic Scattering on Mean and Anomalous Absorption Coefficients of Electrons in Magnesium Oxide Crystals Studied by Electron Microscope
Authors: Kamiya Yoshihiro
Published: November 2005

The intensity of equal-thickness fringes of magnesium oxide is measured by a photometric method. Taking advantage of the chromatic aberration of the electron microscope, the intensity due to elastically scattered electrons and that to inelastically scattered electrons are measured separately. The latter is comparable to the former at the crystal thickness of 200Å and about ten times the former at 1,000Å. This means that the anomalous transmission effect is mainly caused by inelastically scattered electrons. Equal-thickness fringes are produced not only by elastically scattered electrons but also be inelastically scattered electrons with energy loss. The mean and anomalous absorption coefficients are measured for elastically scattered electrons and the results are compared with theoretical values.
Production of Nuclear Isomers from Stable Nuclides with Bremsstrahlung
Authors: Kaminishi Tokishi , Kojima Chiyo
Published: November 2005

For the application of photoexcitation process to activation analysis, a fundamental experiment was carried out.
A number of stable elements were irradiated with Bremsstrahlung from a 6 MeV linear electron accelerator. It was confirmed that the following isomers were directly produced from the stable nuclides with photons: Se-77m, Br-79m, Sr-87m, Y-89m, Rh-103m, Ag-107m+Ag-109m, Cd-111m, In-115m, Sn-117m, Ba-137m, Hf-179, W-183m, Ir-191m, Pt-195m, Au-197, and Hg-199m. Both In-113m and Ba-135m were not reliable and any isomers of even-even nuclides could not be observed in this experiment. In order to facilitate the measurement in practical use, especially for the isomers with half-life as short as several seconds, an automatic apparatus was designed and constructed. After a sample to be tested is transferred by an pneumatic conveyer to the irradiating position, the half-life and the transition energies can be automatically measured with an appreciable accuracy. Details of the apparatus are described.
Half-lives of some short-lived isomers in question could be measured with the accuracy of 1–2% by using this apparatus with the overlap counting technique.
Perfect Focusing Mass Spectrometer
Authors: Arikawa Tatsuo
Published: November 2005

A perfect focusing mass spectrometer has been investigated and the tests were carried out with electrons in the energy range up to 1 KeV concerning both properties of the perfect velocity focusing and of the perfect direction focusing. A luminous intensity of more than 95 percents was obtained experimentally for s=1, where s is a field parameter connecting the electric and the magnetic fields. In addition, the resolving power of this spectrometer was experimentally studied and compared with theoretical results.
Direct Observation of Self-Pinched Plasma Distribution in Indium Antimonide
Authors: Toda Minoru
Published: November 2005

Plasma density distributions near the crystal surface in intrinsic InSb (at 220°K) have been “directly” observed by using a microwave probe technique. Short current pulses were used to avoid heating. For currents higher than the critical current for self-pinching, the plasma density was concentrated at the center of the crystal leaving the thermal equilibrium density throughout the rest of the crystal. From the time dependence of the microwave impedance, the pinch time and lifetime of the excess carriers were estimated. The plasma density distribution was flattened in the presence of longitudinal magnetic fields. When transverse magnetic fields were applied, even for currents below breakdown, non-uniform plasma densities were observed due to the Suhl effect. In addition, several kinds of oscillations in the plasma density were observed.
Construction of 300 KV Electron Microscope and Its Electronmicroscopy
Authors: Kobayashi Keinosuke , Hashimoto Hatsujiro , Suito Eiji , Shimadzu Shinichi , Iwanaga Masaya
Published: November 2005

The three stage voltage supply and three stage electron gun for a 300 KV electron microscope are described. Each stage of the high voltage supply is operated at 100 KV with a ripple stability of about 1×10-4 and is connected to corresponding electrode of the gun. 300 KV is applied to the top electrode directly through an insulated cable whose exterior surface is kept at 200 KV so that 300 KV is not exposed to the air. The stability when operated at about 300 KV is within 4×10-4/min. The resolving power of the electron microscope measured at 300 KV is 20 Å.
Transmissive powers of electron waves accelerated at 100 KV, 200 KV and 300 KV have been estimated for an aluminium single crystal from the contrast of the electron micrographs. Energy dependence of inelastic scattering in organic specimens is also shown. Electron micrographs of Mgo smoke crystals, stainless steel and polyoxy-methylene single crystals taken at 300 KV are presented.
Direct Observation of the Aluminium-Silver Alloy by Electron Microscope
Authors: Watanabe Yasuyoshi , Hayashi Hideo , Hayashi Kiyozumi
Published: November 2005

Aluminium-silver (24 and 30%) alloys were quenched from 500°C and aged at room temperature. For transmission electron microscopy thin sections of the specimen were prepared by electro-polishing and ion-etching. The precipitation and the dissolution process were studied by heating the thin section in a furnace in the electron microscope. As a result, irregular stacking of {111} layers was observed to occur prior to the precipitation of the γ'-phase. The rate of dissolution of the precipitate at 540°C was also measured by means of ciné technique.
Negative Resistance Characteristics and Oscillation Phenomena in Si Diodes
Authors: Fukami Toyoji , Homma Kazuaki
Published: November 2005

Examining the forward characteristic of a new type of Si diode, it was found that the diode showed a negative resistance characteristic at room temperature.
This new type diode was formed from material–which was originally very high resistivity and contained proper concentration of trapping centers– into structures that injected one or two kinds of carriers.
The diode not only shows the negative resistance characteristic, but also exhibits coherent oscillations when placed in a magnetic field applied perpendicularly to the forward current. Explanations for these phenomena are proposed by assuming the existence of narrow streams for the current.
Properties of Silicon Doped with Nickel
Authors: Tokumaru Yozo
Published: November 2005

Measurements of the temperature dependence of the resistivity and Hall coefficient of nickel-doped silicon indicate that nickel acts as an acceptor impurity in silicon, introducing two acceptor levels, namely, 0.35±0.03 eV from the conduction band and 0.23±0.03 eV from the valence band.
Precipitation of nickel from supersaturated solution in silicon has also been studied. The results can be expressed nearly as an exponential decay with time of the unprecipitated fraction of nickel. Precipitate particles of nickel in heat treated samples are observed by infrared microscopic inspection, but typical cylindrical precipitates are not observed. Therefore, according to Ham's theory the particles are most likely of finite dimension at the start of the precipitationmeasurements. This is probably attributable to the fairly long cooling time, about 40 seconds, after nickel diffusion. Thus, it is expected that nickel atoms have fairly precipitated in the course of the cooling.
The nuclei for precipitation of nickel may be considered to be vacancies generated at dislocations.
Metal Mesh Filters in the Far Infrared Region
Authors: Mitsuishi A. , Otsuka Y. , Fujita S. , Yoshinaga H.
Published: November 2005

The transmittance and reflectivity of metal meshes made of brass wire were measured in the far infrared region. The reflectivity of these meshes is very low in the wavelength region up to the wavelength of about 1.3 times the mesh constant, but then increases steeply so that the mesh becomes a nearly perfect reflector beyond the wavelength of about twice the mesh constant. This reflecting property is excellent for a reflection filter, compared with the usual far infrared filters.
Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge
Authors: Arizumi Tetsuya , Akasaki Isamu
Published: November 2005

The incorporation of impurities into single crystal layers of Ge grown by the disproportionation reaction 2GeI2\rightleftarrowsGe+GeI4, is studied thermodynamically. Impurity iodides formed in the source region are carried over substrate wafers where impurity atoms are liberated mainly through the reduction by Ge or GeI2
. The amount of impurity incorporated depends largely upon the yields of reactions involved in the doping process, and the analysis leads to the conclusion that Sb, P and As are favorable as donor impurities while Ga, In and BI3 as acceptor impurities.
Operating Characteristics of Large Diameter Photomultipliers, II. Noise
Authors: Iinuma Takeshi A.
Published: November 2005

The pulse height distribution for the photomultiplier noise under a normalized gain was investigated as a function of P.C.-D.1. voltage with two types of 7 in. diameter tubes. (20th Century: VMP/11/170 and E.M.I. 9623) The two types of tubes showed very different characteristics which were ascribed to the difference in electron-optical structure of P.C.-D.1. system. VMP/11/170 tubes showed an optimal S/N ratio at about 150 V which could be explained by change in tube gain variance with the voltage.
Noise spectra for 9623 tubes were critically dependent upon the potentials of two focusing electrodes. Some possible mechanisms for noise variations with 9623 are briefly discussed.
Mechanical Dispersions in Polycarbonate
Authors: Arisawa Kunio , Hirose Hidenori , Ishikawa Minoru , Harada Toyotaro , Wada Yasaku
Published: November 2005

Viscoelastic behavior of poly (bisphenol-A carbonate) above the glass transition temperature is studied by a creep test. In the primary dispersion region, the retardation spectrum increases with increase of retardation time with a slope of 1/2 in a doubly logarithmic plot as predicted by the Rouse theory, and then reaches a maximum. The molecular weight between entanglements is estimated as 2300 from this maximum value. The temperature dependence of retardation times obeys the WLF equation.
The local mode dispersion below the glass transition temperature is studied by use of several dynamic methods. Dielectric measurement is made for comparison. The activation energy is obtained as 11 kcal/mode. Distribution of retardation times of the local mode dispersion is attributed to non-uniformity in force constant and friction coefficient to each molecular unit.
Characteristics of Langmuir Probe in a Strong Magnetic Field
Authors: Nobata Kanehiro
Published: November 2005

The mechanism of the collection of charged particles by a Langmuir probe in a strong magnetic field is theoretically investigated. The magnetic field is assumed to be sufficiently strong,i.e.the electron cyclotron frequency exceeds the collision frequency of electrons with neutral gas molecules, and the following results are obtained: When the length of the probe in the direction of the magnetic field is larger than the average gyration diameter of electrons, the probe current is determined by the gyration diameter, whereas when the probe length is smaller, the probe current is free from the effect of the magnetic field. Discussions are also given for the case where as electric field exists between the probe and the plasma. Experimental results concerned with the saturation electron current agree with the calculated values.
Experimental Studies of Impurity Doping in Vapor Growth of Ge
Authors: Arizumi Tetsuya , Akasaki Isamu , Nishinaga Tatau
Published: November 2005

The incorporation of several important impurities into germanium by the disproportionation reaction was studied experimentally through Open Tube Process. The transfer ratio of Sb is nearly unity and it is the most favorable as a donor impurity. Its maximum concentration, ∼3×1019 cm-3, is limited by the solid solubility in Ge. Ga is applicable for doping lower than about 1018 cm-3, but In seems inadequate because the results are not reproducible. The slow rate of iodination of B makes it impossible to use metallic B or B-doped Ge as a source material. BI3 is easily reduced by Ge and hydrogen and it is the most suitable for acceptor doping. The experimental results agree so well with the thermodynamic predictions.
Kinetics of Vapor Growth in the System GaAs-I2
Authors: Okada Takasi , Kano Takao , Kikuchi Sadao
Published: November 2005

The epitaxial vapor growth of GaAs in a closed tube containing iodine as a carrier gas is studied. Results obtained indicate clearly that the process is diffusion controlled. The transport rate is determined as functions of operations temperature T and of initial iodine concentration C
0. The rate at a give C
0 has a maximum at T
max which increase with increasing C
0. Taking C
0 as the variable and fixing the temperature T, the rate has also a maximum. These facts can be explained satisfactorily on the bases of Fick's diffusion law and of the following chemical equilibrium:

2GaAs+GaI3\rightleftarrows3GaI+\tfrac12As4.
Growth of Droplets and Condensation Coefficients of Some Liquids
Authors: Wakeshima Hiromu , Takata Kazuo
Published: November 2005

The process of growth of fog droplets in suppersaturated vapor was investigated, making use of photoelectrical measurements on the time rate of increase in the intensity of scattered light by the droplets of developing fog. The experimental results were compared with the theoretical concerning the growth of fog droplets in supersaturated vapor which contain the condensation coefficient as a parameter. The values thus obtained are about 0.02 for water, 0.004 for methyl alcohol and 0.01 for ethyl alcohol.
Mössbauer Spectroscopy of Amorphous Fe-B Alloys
Authors: Oshima Ryuichiro , Fujita Francisco Eiichi
Published: November 2005

Binary Fe-B amorphous alloys containing 12–25 at%B were studied by 57Fe Mössbauer spectroscopy. The spectra were examined by Fourier analysis and near-neighbor configuration analysis. The characteristic concentration dependence of the internal field distribution was explained by the interactions between iron and boron atoms in different ways depending on the boron content and the microstructure of the amorphous matrix. Alloys with boron content below 20 at% exhibited well-developed short range order with the bcc-like near-neighbor configuration, while Fe-25 at%B and slowly-quenched Fe-12 and 13 at%B alloys showed a considerable fraction of chemical order of the Fe3B type. The existence of chemical clusters in Fe-25 at%B suppressed the nucleation of Fe2B precipitates, and this alloy was therefore the most thermally-stable.
Various Light Resonance Mechanisms in Dielectric and Metallic Layers, and a Measurement Procedure for Optical Constants
Authors: Kitajima Hiroe , Hieda Katsuhiko , Suematsu Yasuharu
Published: November 2005

In this paper, various light resonance mechanisms in dielectric and metallic film layers have been studied. In a prism metal film coupling structure for surface plasma wave excitations, under optimum conditions, which are related to the thickness of the metal film and the gap between the prism and the metal film, the reflectance at the prism gap boundary becomes zero at three different angles of incidence. Furthermore, anomalous light absorption occurs due to the excitation of longitudinal plasma waves; even when the collison loss of the free electrons is assumed to be zero, the reflectance becomes zero. A measurement procedure is also shown with experimental data for determining the complex refractive index and the film thickness of metal films at the same time.
Surfaces of Vacuum-Deposited Silicon Oxide Films Studied by Auger Electron Spectroscopy
Authors: Maki Kunisuke , Shigeta Yukichi
Published: November 2005

Silicon oxide films were deposited at a rate of 10–20 Å/min by heating commercial SiO powder in vacuums of 10-5 and 10-7 Torr and were analyzed by Auger electron spectroscopy (AES). To assign the Auger spectra with the energy range 50–100 eV from the film surfaces, AES was carried out on air-fractured and electron-irradiated surfaces of quartz. The spectra are attributed to a three-dimensional network of Si(–O–)4 tetrahedra; no spectra due to networks of Si(–Si–)4 tetrahedra were observed. These results were supported by low-energy electron energy-loss spectra observations. The Auger spectrum associated with oxygen vacancies was also observed, the intensity of this being higher for the films prepared in the higher vacuum. Thus the silicon oxide film surfaces are presumed to consist of a three-dimensional network of Si(–O–)4 tetrahedra with some oxygen vacancies.
Factorial Moment of Two Poissonian Lights Superposed on Gaussian-Lorentzian Light
Authors: Sato Hideaki , Suzuki Norihito
Published: November 2005

A photon counting method is adapted to spectroscopy in very low intensity, as it is useful for data acquisition. There are two Poissonian lights which cannot be discriminated by this method. One is coherent light, and the other is Gaussian-Lorentzian light with infinite spectral linewidth. In this experiment, Gaussian-Lorentzian light with finite spectral linewidth was superposed on each Poissonian light, and the difference of the two radiation mechanisms was determined by profiles of the second-order factorial moment of the photon counting distribution.
Measurement of Ferroelectric Polarization along Critical Isotherm
Authors: Imai Kiyoyasu
Published: November 2005

A simple method is proposed for measuring the polarizations along the critical isotherm. A characteristic of the method is that the quasi-isothermal polarization can be measured while admitting the electrocaloric effect. The principle is that thermal equilibrium between a sample and its thermal bath can be achieved for a particular field E (i.e., P) by continuous application of a square-wave field of amplitude E. The results of the application of the method to triglycine sulfate are shown and are compared with the adiabatic results.
Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent
Authors: Nakamura Hiroshi , Aoki Masaharu
Published: November 2005

Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slide-boat technique was used, and a suitable starting temperature for growth was found to be 850°C for ZnS and 700–800°C for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (∼1 µm) and smooth, had low, uniform Te concentrations (∼0.1 at.%) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10–30 µm) and had fairly high Te concentrations (a few at.%). Various mixed compound ZnS1-x
Se
x
were also grown on ZnS substrates.
Ion Implantation Masking Ability Degradation in High Temperature Annealed Mo Film
Authors: Nozaki Tadatoshi , Okabayashi Hidekazu , Higuchi Kohei
Published: November 2005

Unwanted depletion modes have been observed in Mo-gate MOSFET characteristics, when high-temperature annealed Mo-gate film was used as a mask for As implantation into source and drain region, in sharp contrast to enhancement mode characteristics for FETs with as-deposited Mo-gate film. Donor-type impurity incorporation in Si substrate and fast interface states generation were derived from C
V characteristics for diodes fabricated by the same process as used for depletion-mode FETs. The former is considered to be due to As incorporation in the Si substrate owing to channeling through annealed Mo film resulting from improved crystallinity, and the latter to some impurity contamination in the gate oxide film due to the As knock-on effect.
Near Band-Edge Photoluminescence of Cadmium Sulfo-Selenide Single Crystals
Authors: Mochizuki Katsumi , Igaki Kenzo
Published: November 2005

The near band-edge photoluminescence of cadmium sulfo-selenide single crystals CdS
x
Se1-x
is measured at 4.2 K. The origins of the observed luminescence of CdS
x
Se1-x
are assigned by analogy with CdS. Emissions due to excitons and donor-acceptor pairs are clearly identified, and the dependence of these emission energies on the composition X is obtained.
Determination of the Atomic Scattering Factors of Germanium by Means of the Pendellösung-Beat Measurement Using White Radiations
Authors: Takama Toshihiko , Sato Shin'ichi
Published: November 2005

An attempt was made to measure the Pendellösung intensity beats of white radiations diffracted from parallel-sided single crystal wafers of germanium by the energy-dispersive diffraction technique. The extremum positions in the beats were determined to evaluate the atomic scattering factors for seven reflections, 111 to 511. The scattering factor showed a clear wavelength dependence in the wavelength range between 0.3 and 0.6 A, which can be expected from the dispersion correction term f', as calculated by Cromer. From the measured values of (f

h
k
l

0+f') e-M
at 0.4 A, the f

h
k
l

0 values for the seven reflections were evaluated by using Cromer's f' value and the characteristic temperature, \varTheta
M
=290 K, which has been reported by Batterman and Chipman and by Ludewig. The obtained f

h
k
l

0 values, except for the 111 reflection, were almost the same as the data by Matsushita and Kohra.
Photoinjection Barriers at Chalcogenide/Se Interfaces
Authors: Fujimaki Yoshihide , Shimizu Isamu , Kokado Hiroshi
Published: November 2005

The photoinjection of holes from As-Se-Te alloys into Se has been studied in Se/chalcogenide/Se/poly-N-vinylcarbazole (PVK) multilayered samples. The field dependence of the photoinjection currents was found to obey the Richardson-Schottky emission law. The Schottky coefficients and the activation energies of injection were determined, keeping the field dependence of the hole transport in the PVK layer separate from that of the photoinjection currents. The former agreed approximately with the theoretical values. The latter were calculated to be 0.1 eV, 0.3 eV and 0.4 eV at ∼105 V/cm field, for Se/PVK, As2Se2Te/Se, and As2Se1.5Te1.5/Se interfaces; respectively.
Formation and Recovery of Defects in Quenched β-Brass
Authors: Yamaguchi Hiroyuki , Ishii Shuichi , Nakane Yukiyoshi , Yoshida Sho
Published: November 2005

Foils of β-brass were quenched from 800°C in brine at -5°C and examined by transmission electron microscopy. The fine structures of defects, distributed in a network pattern, are shown to be composed of small irregularly-shaped dislocation loops. The Burgers vectors of these dislocation loops are found to be both a/2<111> and a<110>. These fine structures coarsen during annealing at various temperatures from 100° to 200°C, while their density decreases. This fact is discussed considering both bulk and pipe diffusion mechanisms, and it is shown that the recovery of these fine structures is controlled by pipe diffusion at low temperatures, but by bulk diffusion at high temperatures.
Investigation on Auger Line Shapes of Sulfur in Different Chemical Environments
Authors: Miura Tadao
Published: November 2005

Auger spectra of sulfur in different chemical environments have been discussed with regard to ionization loss and low energy loss results. The Auger peak of sulfur itself shows a single main peak. On the other hand, that of sulfur in compound shows doublet structure. They were investigated in terms of cross transitions. The origin of the cross transitions may be interpreted from observed energy values of Auger peaks compared with energy values calculated from the loss energies in the ionization loss process and the low energy loss process. The loss energies are measured with respect to the empty energy state, to which the electron in the bound state is scattered, instead of the Fermi level. It is considered that the final holes states in the valence band are not always limited to the states derived from the outer shell levels of sulfur.
Cathodoluminescent Properties of ZnS:Ce, Li Phosphor
Authors: Kawai Hiroji , Hoshina Teruhiko
Published: November 2005

The bluish-green cathodoluminescence of ZnS:Ce, Li has been investigated while varying the firing temperature, Ce and Li concentrations. Bright luminescence of Ce3+ is obtained only when the samples are quenched from a temperature higher than 1000°C in a sulfur atmosphere containing Li. The optimum concentration of Ce is 5×10-5–10-4 g. atom/mol. The Li concentration should be higher than that of Ce for efficient luminescence. The maximum energy conversion efficiency of the as-quenched samples is about 12%. The luminescence efficiency is greatly decreased by heat-treatment at temperatures below 900°C, probably because of segregation of Li ions. Noble metals and other Ia elements are not such efficient sensitizers as Li for Ce3+ luminescence.
Grain Structure and Magnetic Anisotropy of Fe Film Evaporated Obliquely from Two Sources
Authors: Keitoku Susumu , Nishioka Kazue
Published: November 2005

A columnar grain structure different from the conventional one has been found experimentally in Fe film evaporated at oblique incidence from two vapor sources positioned opposite one another. The direction of the columnar grain in the film is perpendicular to the substrate, and the column aggregates to form a row perpendicular to the plane of incidence. This formation has been discussed satisfactorily by simulation of the crystallite growth, and the grain structure has been confirmed by three-dimensional analysis of the magnetic anisotropy. Furthermore it is emphasized here that this structure brings out a larger magnetic anisotropy in the film plane than that of conventional film evaporated at oblique incidence.
Theoretical Analysis of Simplified Four Wavelength Division Solar Cell System
Authors: Sakai Shiro , Umeno Masayoshi
Published: November 2005

A new and simple method of dividing the solar spectrum into four parts is proposed and its conversion efficiency is calculated theoretically. An efficiency of more than 31% is obtainable by a suitable choice of device parameters. The optimum conditions are determined in this paper.
InGaAs/InGaAsP Avalanche Photodiodes and Analysis of Internal Quantum Efficiency
Authors: Takanashi Yoshifumi , Horikoshi Yoshiji
Published: November 2005

New avalanche photodiodes designed in such a way as to have the In0.53Ga0.47As alloy as a light-absorption layer and the 1.1 µm InGaAsP quaternary alloy as a carrier-acceleration layer have been fabricated.
The resulting photodiodes exhibit a spectral response over a wide wavelength range from 1.1 to 1.6 µm, with a peak external quantum efficiency of 60% at λ=1.6 µm; and the maximum avalanche gain is about 6 when measured at the initial photocurrent of 10 µA. The theory of hot carriers allows us to investigate punch-through phenomena occuring in heterostructure avalanche photodiodes. According to our theory, the electrical field at the heterointerface required for an internal quantum efficiency of 90% is at least 6×104 V/cm for InGaAs/InGaAsP avalanche photodiodes, and 1×105 V/cm for InGaAs/InP avalanche photodiodes. Optimum designs for both avalanche photodiodes are discussed in greater detail. on the basis of theoretical and experimental results.
Gain Calculation of Undoped GaAs Injection Laser Taking Account of Electronic Intra-Band Relaxation
Authors: Yamada Minoru , Ishiguro Hisanori
Published: November 2005

The intra-band relaxation of electrons is a basic factor to be considered for the characterization of injection lasers, especially in the investigation of modal behavior under lasing operation. This paper discusses the gain and refractive index in quantitative terms and considers the intra-band relaxation phenomenon in undoped GaAs lasers. The linear and third order gain coefficients are summarized in arithmetic equations by numerical calculation. Some characteristic parameters in the equations are also confirmed experimentally through measurements of the output spectral profile and laser threshold. The results give a more consistent interpretation of non-oscillating and oscillating states than previously-established theories, which do not take into account the intra-band relaxation.
Electrical Circuit Design of Fast-Discharge System for High-Power Rare-Gas Halide Lasers
Authors: Maeda Mitsuo , Nishitarumizu Tsuyoshi , Miyazoe Yasushi
Published: November 2005

The electrical characteristics of UV-preionized fast-discharge excimer lasers in which a flatplate pulse-forming line (PFL) insulated with pure water is charged by a high-voltage Marx-bank generator are investigated experimentally and analytically. Experimental results are reported on two types of laser system, single PFL and double PFL. An output energy of 1.3 J/pulse is obtained for XeCl excimers in the latter system with an active volume of 92×4 (gap length)×1.5 cm3. The electrical circuits of these systems are approximated by a simplified equivalent circuit, and the interdependence of the circuit parameters is discussed. In this case, the development of a transfer gap with a high switching voltage is important in order to improve the lasing efficiency. The circuit design of a large fast-discharge excimer laser whose output energy is of the order of 10 J/pulse is discussed briefly.
Transverse Bunched Beam Instability in KEK Booster
Authors: Kasuga Toshio , Kawakubo Tadamichi , Takeda Shigeru , Someya Hirohiko , Suetake Masaaki
Published: November 2005

A transverse bunched beam instability has been observed over the past few years in the KEK booster synchrotron, and the kicker magnet for the fast beam extraction has been thought to be responsible for this instability. To check this supposition, the instability was observed quantitatively using a spectrum analyzer and its growth rate was compared with calculations assuming various termination conditions at the feeding end of the coaxial cable of the kicker. The variation of the growth rate with time for a realistic case is well explained by the reflection of the current induced in the kicker at the feeding end of the cable.
Etched Profile of Si by Ion-Bombardment-Enhanced Etching
Authors: Moriwaki Kazuyuki , Aritome Hiroaki , Namba Susumu
Published: November 2005

The basic characteristics of the ion-bombardment-enhanced etching (IBEE) of Si are investigated, using 60 keV-Ar as the bombarding ion, with regard to its application to submicron lithography. The damaged layer to be etched is determined by calculating the deposited energy distribution in the substrate and by using the threshold deposited energy. The etched profile of Si under a pattern mask is calculated using the value of 4×1023 eV/cm3 as the threshold. The calculated profile and the amount of side etching of Si are compared with the observed ones, and the agreement between them is found to be good, with an accuracy of 10 nm. The optimum dose for obtaining submicron patterns with sharp edges is found to be 0.8 –2×1015 Ar+/cm2 at 60 keV. The etched patterns made by a focused ion beam with Gaussian profile are also calculated.
Recent Progress in Glass Fibers for Optical Communication
Authors: Niizeki Nobukazu
Published: November 2005

Since the first announcement of low-loss fiber by Corning Glass Works in 1970, remarkable progress has been made in glass fibers for optical communication both in fabrication techniques and in fiber transmission characteristics. Various fabrication methods have been proposed and examined; the outside vapor-phase oxidation (OVPO) method, the modified chemical vapor deposition (MCVD) method, and the vapor-phase axial deposition (VAD) method, to name typical examples. These processes have enabled us to obtain graded-index multi-mode fibers with low loss and broad bandwidth, as well as low-loss single-mode fibers. In particular, the development of low transmission-loss fibers in the long-wavelength band opened up a new low-loss window in the wavelength bands of 1.3 µm and 1.55 µm.
This review paper describes recent progress in the fabrication methods and transmission characteristics of optical fibers, together with future trends and items for research in the field of optical communications.