bluuebunny/crossref_metadata_2025 huggingface dataset:
COMPUTATIONAL APPROACHES FOR DRUG REPOSITIONING AND COMBINATION THERAPY DESIGN
Authors: KOTELNIKOVA EKATERINA , YURYEV ANTON , MAZO ILYA , DARASELIA NIKOLAI
Published: March 2010

Heterogeneous high-throughput biological data become readily available for various diseases. The amount of data points generated by such experiments does not allow manual integration of the information to design the most optimal therapy for a disease. We describe a novel computational workflow for designing therapy using Ariadne Genomics Pathway Studio software. We use publically available microarray experiments for glioblastoma and automatically constructed ResNet and ChemEffect databases to exemplify how to find potentially effective chemicals for glioblastoma — the disease yet without effective treatment. Our first approach involved construction of signaling pathway affected in glioblastoma using scientific literature and data available in ResNet database. Compounds known to affect multiple proteins in this pathway were found in ChemEffect database. Another approach involved analysis of differential expression in glioblastoma patients using Sub-Network Enrichment Analysis (SNEA). SNEA identified angiogenesis-related protein Cyr61 as the major positive regulator upstream of genes differentially expressed in glioblastoma. Using our findings, we then identified breast cancer drug Fulvestrant as a major inhibitor of glioblastoma pathway as well as Cyr61. This suggested Fulvestrant as a potential treatment against glioblastoma. We further show how to increase efficacy of glioblastoma treatment by finding optimal combinations of Fulvestrant with other drugs.
Investigation of Bending Stability of Amorphous Zn–In–Sn-O Thin Films on Flexible Poly(ether sulfone) Substrates
Authors: Heo Gi-Seok , Gim In-Gi , Lee Hyun-Kee , Song Jeong-Hwan , Kim Tae-Won
Published: March 2010

Zn–In–Sn-O (ZITO) and ITO thin films were fabricated on flexible poly(ether sulfone) (PES) substrates by RF magnetron cosputtering. The bending stability of the films was investigated by employing a dynamic bending tester and monitoring the resistance change (ΔR) of the films. The resistance of the polycrystalline ITO films increased more than eightfold after 600 cycles of dynamic bending, while the resistance of the amorphous ZITO thin films remained constant. Internal stress measurements and microscopic images revealed that the significant increase in the resistance of the polycrystalline ITO films was mainly attributed to the large compressive stress of the polycrystalline ITO films and the large quantity of cracks or delaminations generated as the films were bent, while the amorphous ZITO films remained substantially intact. These results showed that the amorphous ZITO thin films had high mechanical durability against external dynamic stress and the possible application of flexible optoelectronic devices.
Effects of Bulk Microdefects and Metallic Impurities on p–n Junction Leakage Currents in Silicon
Authors: Kim Kwang-Salk , Moon Byeong-sam , Kang Hee-Bok , Park Jea-gun , Lee Bo-Young
Published: March 2010

The effects of bulk microdefects and metallic impurities on leakage currents at p–n junctions have been evaluated quantitatively by relating leakage currents with bulk defects and metallic impurities, and the results are reported. Bulk defects and metallic impurities, which were introduced by appropriate thermal treatment and intentional contamination by spin-coating metal ion solutions onto the silicon surfaces, were shown to induce heavy leakage currents at p–n junctions, which had been manufactured by boron implantation and phosphorus diffusion. We found the bulk microdefects to be critical in causing leakage currents to flow and propose that their measurements be used as a means for the determination of the bulk defect densities. Die failure rates were also used for the evaluation of the effects of metallic impurities such as Cu, Ni, and Fe on the leakage currents.
Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping
Authors: Ohmagari Shinya , Yoshitake Tsuyoshi , Nagano Akira , Ohtani Ryota , Setoyama Hiroyuki , Kobayashi Eiichi , Hara Takeshi , Nagayama Kunihito
Published: March 2010

p-Type ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films were fabricated by pulsed laser deposition using boron-doped graphite targets. Thermal analysis confirmed the occurrence of p-type conduction. The electrical conductivity increased with the doped amount of boron. An activation energy estimated from the Arrhenius plot was approximately 0.1 eV. Near-edge X-ray absorption fine structure spectra revealed that the σ*C–H peak weakened and the σ*C–B peak strengthened with an increase in the doped amount of boron. Fourier transform infrared spectroscopy showed that the sp3 C–H peak weakened with the doped amount of boron. These probably indicate that the hydrogen atoms that terminate the dangling bonds of UNCD crystallites are partially replaced with boron atoms.
Metalorganic Chemical Vapor Deposition of Al2O3 Thin Films from Dimethylaluminumhydride and O2
Authors: He Gang , Wang Xiaoliang , Oshima Masaharu , Shimogaki Yukihiro
Published: March 2010

Metalorganic chemical vapor deposition (MOCVD) of Al2O3 thin films using dimethylaluminumhydride (DMAH) and O2 as precursor and oxidant, has respectively been performed on Si substrate. Compared with some reported results, Al2O3 films with low carbon content and suppressed interfacial layer using this new chemistry can be obtained at a low deposition temperature. Growth kinetics study indicates that these kinetic behaviors follow the Langmuir–Hinshelwood mechanism. Process optimization suggests that high-quality Al2O3 films with low carbon content and high refractive index, as well as the suppressed interfacial layer thickness of 0.2 nm, can be deposited at the substrate temperature of 300 °C and oxygen partial pressure of 1.6 Torr. On the basis of our investigation, it can be concluded that the MOCVD-derived Al2O3 films on Si grown by the new CVD chemistry show reasonable properties as promising candidates for high-k gate dielectrics.
Aqueous Dispersion of J-Aggregates Prepared by Polyion Complexation and Its Two-Photon Excited Fluorescence Property
Authors: Kato Noritaka , Katayama Yukinobu , Semba Haruyuki , Iimura Ken-ichi
Published: March 2010

An aqueous dispersion of J-aggregates was prepared by the complexation between an anionic cyanine dye and a polycation. 5-chloro-2-[[5-chloro-3-(3-sulfopropyl)-2(3H)-benzothiazolylidene]methyl]-3-(3-suflopropyl)benzothiazolium hydroxide sodium salt and poly(allylamine hydrochloride) were used as the anionic dye and the polycation, respectively. Upon mixture of the aqueous solutions of these materials under a certain condition, a transparent aqueous dispersion with a sharp J-aggregate absorption band at 460 nm was obtained, and the J-aggregates in the dispersion exhibited no dissociation even after 30-fold dilution with water, indicating that the J-aggregates were stable in aqueous media. The two-photon excited fluorescence action cross section (σTPEF) of the aqueous dispersion of J-aggregates was observed in the excitation wavelength range from 800 to 900 nm, and the maximum value of σTPEF was evaluated to be 92 GM. The σTPEF values of the monomeric and aggregated cyanine dye molecules were compared, and it was revealed that the σTPEF was enhanced by ∼1300 times upon J-aggregation.
High-Brightness 350 nm Ultraviolet InAlGaN Light Emitting Diodes on Si(111) Substrate with Transparent AlN/AlGaN Buffer Structure
Authors: Fukushima Yasuyuki , Ueda Tetsuzo
Published: March 2010

We report on high brightness ultraviolet (UV) light emitting diodes (LEDs) with an InAlGaN/AlGaN multi quantum well (MQW) on a Si(111) substrate emitting around 350 nm. With high indium contents up to 10% in the quaternary alloy InAlGaN well layers, strong UV emission is obtained in cathode-luminescence and photoluminescence measurements. With a novel AlN/AlGaN superlattices (SLs) buffer, a crack-free, low dislocation AlGaN cladding layer is expitaxially grown on a Si(111) substrate. By combining the quaternary InAlGaN well with a high indium content and the high quality AlGaN cladding layer on the AlN/AlGaN SLs, the InAlGaN/AlGaN MQW exhibits very high internal quantum efficiency of 15% at around 350 nm. The UV LED on Si(111) emits at a peak emission wavelength of 350.9 nm at 20 mA driving current. The maximum UV output power of the LED is 3.9 times as high as that without indium in the well.
New Weighting Function Designed for Low-Crosstalk, Small Length Mismatched Optical Coupler
Authors: Chen Chi-Feng
Published: March 2010

A new weighting function we developed called the broadband weighting function is reported. It is numerically shown that excellent results are obtained compared with those obtained using the Blackman and Hamming weighting functions for application to the waveguide structure of mismatched optical couplers that satisty the demand for small length, C+L-band, and low crosstalk level. It is found that a coupler with a coupling length of 2.5 mm and a crosstalk of -35 dB can reach bandwidths within 1.360–1.700 µm. Using the same crosstalk and a coupling length of 3.7 mm, the broadband-weighting-function-weighted mismatched optical couplers can achieve broader bandwidths within 1.230–1.700 µm. Considering the tolerances of structure parameters, the coupler with a coupling length of 3.4 mm which is much smaller than those obtained using the Blackman and Hamming weighting functions (namely, 5.0 and 4.9 mm, respectively) satisfies the demands for the C+L-band and a crosstalk level of -35 dB.
Investigation of Spin-Dependent Transport Properties and Spin–Spin Interactions in a Copper-Phthalocyanine–Cobalt Nanocomposite System
Authors: Tang Zhenyao , Tanabe Shinichi , Hatanaka Daiki , Nozaki Takayuki , Shinjo Teruya , Mizukami Shigemi , Ando Yasuo , Suzuki Yoshishige , Shiraishi Masashi
Published: March 2010

We have fabricated a series of copper-phthalocyanine–cobalt (CuPc–Co) nanocomposites (compositional ratio of CuPc:Co=4:1), wherein Co nanoparticles were embedded within a CuPc matrix, in order to study the spin transport properties and to investigate spin–spin interactions between conducting spins and localized spins in the CuPc. Nonlinear characteristics of electric current, I–V
(2N-1), (V: bias voltage, N: order of co-tunneling) were observed, where the fifth order co-tunneling was clarified. The order of the co-tunneling effect in CuPc–Co was almost equal to that in a rubrene–Co nanocomposite with almost the same diameter of the Co nanoparticles. We have not found clear evidence of spin-flip processes, as observed in other molecular systems, which may be attributed to the spin-coupling between localized spins in the CuPc and spins in Co.
Growth and Anisotropic Properties of RBa2Cu3Ox Single-Crystal Whiskers
Authors: Nagao Masanori , Watauchi Satoshi , Tanaka Isao , Okutsu Takashi , Takano Yoshihiko , Hatano Takeshi , Maeda Hiroshi
Published: March 2010

Single-crystal whiskers of RBa2Cu3O
x
(R-123, R=Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Y) were successfully grown from Sb- or Te-doped precursors with a nominal composition of R1.5Ba2.75–3.00Cu3M0.5O
x
(M: Sb,Te). The whiskers were grown parallel to the a
b-plane with the following typical dimensions: 2–8 mm in length, 20–80 µm in width, and 10–30 µm in thickness. In the case of rare-earth ions (R3+) with a small ionic radius (Dy, Ho, Er, Tm, Yb, and Y), R-123 whiskers were grown from Te-doped precursors. The growths of Y-123 and Ho-123 whiskers were confirmed using both Te-doped and Sb-doped precursors. On the other hand, for rare-earth ions (R3+) with a large ionic radius (Sm, Eu, and Gd), R-123 whiskers were grown only from Sb-doped precursors. Sb and Te were not detected in the grown whiskers by electron probe microanalysis. The anisotropies of R-123 single-crystal whiskers in the flux liquid state were estimated to be 6.0–33 from the angular dependence of their resistivities under various magnetic fields. The anisotropy increased with decreasing superconducting transition temperature.
Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor
Authors: Chang Tsu , Kao Hsuan-ling , Chen Y. J. , Chin Albert
Published: March 2010

We have characterized and modeled the radio frequency (RF) power performance of a 0.18 µm asymmetric-lightly-doped-drain metal–oxide–semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 µm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.
Low Frequency Noise Characterization in Metal Oxide Semiconductor Field Effect Transistor Based Charge Transfer Device at Room and Low Temperatures
Authors: Singh Vipul , Inokawa Hiroshi , Endoh Tetsuo , Satoh Hiroaki
Published: March 2010

Low-frequency noise in metal oxide semiconductor field effect transistor (MOSFET) based charge transfer devices have been characterized both at room temperature and a low temperature. At room temperature the noise observed in charge transfer operation was found to be comparable to or slightly smaller than the noise in the DC operation of these devices. Furthermore, at 20 K the charge transfer operation showed 25 times larger noise power; also, the noise power in charge transfer operation demonstrated a direct proportionality to gate pulse frequency. These observations have been explained on the basis of change of emission and capture times at interface traps. The results presented here also indicate the significance of reduction in number of traps for accurate charge transfer operation at cryogenic temperatures.
Formation of Si Nanocrystallites in Al-Added Amorphous Si Films by Electron Beam Irradiation
Authors: Shim Jae-Hyun , Cho Nam-Hee , Kim Jin-Gyu , Kim Youn-Joong
Published: March 2010

Si nanocrystallites were formed in Al-added amorphous Si films (Al/a-Si, a-Al
x
Si1-x
) by the irradiation of a focused electron beam. In-situ heating of the a-Al0.025Si0.975 films was performed at temperatures up to 400 °C. The size, shape, and concentration of the Si crystallites varied significantly with the film temperature and electron beam irradiation time. Si nanocrystallites with a mean size of ∼10 nm were formed when the films were kept at 200 °C, and irradiated using an electron beam with a current density of 15.7 pA/cm2. The total crystallite volume fraction in the films increased from ∼9.2 to ∼94.8% with increasing temperature from 100 to 400 °C. The estimated activation energy for the crystallization in the a-Al0.025Si0.975 film under the electron beam irradiation was 0.78±0.05 eV.
Optimization of Interface Resistance between Carbon Nanotubes and Probe-Shaped Titanium Wire
Authors: Tomimoto Hiroyuki , Nakayama Tomonobu
Published: March 2010

We investigated the resistance at the interface between carbon nanotubes (CNTs) and a probe-shaped titanium (Ti) wire upon annealing in vacuum. CNTs were attached to the end of the sharpened Ti wire by dielectrophoresis. The resistance was decreased by several orders of magnitude by annealing at 350 °C, which is lower than the temperature at which titanium carbide forms. The observed decrease in resistance by annealing at this moderate temperature is due to the removal of organic contaminants from the interface, which contributes to realizing direct contact between the CNTs and Ti while preserving a large contact area.
Gettering Efficiency of Si(110)/Si(100) Directly Bonded Hybrid Crystal Orientation Substrates
Authors: Aoki Tatsuhiko , Kariyazaki Hiroaki , Sueoka Koji , Toyoda Eiji , Izunome Koji
Published: March 2010

Si(110) and Si(100) directly bonded (DSB) substrates are paid attention as candidate materials for the substrate of next-generation complementary metal oxide semiconductors (CMOSs). From a practical viewpoint on DSB substrates, we have investigated the gettering efficiency at the bonded interfaces of DSB substrates. In our experiments, DSB substrates were intentionally contaminated with 3d transition metals (Fe, Cu, and Ni) and then annealed at 1000 °C. The dependence of the concentrations of these metals on the depth of what was evaluated by secondary ionization mass spectrometry (SIMS). It was found that the bonded interface has a good gettering ability for these metals. Results of the preferential etching method support the results of SIMS. Transmission electron microscopy (TEM) showed that (i) the gettered Fe and Ni formed the silicides FeSi2 and Ni2Si3, respectively; however, (ii) no Cu precipitates formed at the bonded interface. Furthermore, we confirmed that the bonded interface can be effective gettering sites for Cr and Ti. This result indicates that the bonded interface can become effective gettering sites for metals with low diffusivities, if they reach the interface just below the device active layer.
Surface Evolution of GaP Grown on Si Substrates Using Metalorganic Vapor Phase Epitaxy
Authors: Takano Yasushi , Takagi Tatsuya , Matsuo Yuuki , Fuke Shunro
Published: March 2010

GaP surface evolution on Si substrates in the initial growth stage was investigated using atomic force microscopy. The GaP was grown on 4°-misoriented Si substrates at 700–830 °C using metalorganic vapor phase epitaxy. Island growth was predominant below nominal 5 nm thickness at 830 °C. Several antiphase domains (APDs) grew to be 100 nm or longer at nominal 5 nm deposition. They were 5 nm higher than surrounding islands. The surrounding islands formed a layer at a nominal thickness over 5 nm. The layer grew vertically faster than the APDs. Several APDs grew laterally until a layer-thickness exceeded an APD height. The layer finally embedded the APDs. Self-annihilation of APDs was achieved below 40 nm thickness. Similar surface evolution was found at 770 and 800 °C. The APD size decreased with decreasing temperature. Self-annihilation of APDs was achieved below 20 nm thickness at 770 °C.
Self-Calibrated Measurement of Ion Flow Using a Fine Multihole Directional Langmuir Probe
Authors: Terasaka Kenichiro , Yoshimura Shinji , Katahira Tetsushi , Ogiwara Kohei , Aramaki Mitsutoshi , Tanaka Masayoshi Y.
Published: March 2010

A fine multihole directional Langmuir probe (FM-DLP) has been developed to measure ion Mach number and tested in an electron cyclotron resonance (ECR) plasma. It is found that the FM-DLP can measure the ion Mach number with the same method used for a conventional directional Langmuir probe (DLP). Moreover, the sensitivity of the FM-DLP is almost twice as high as that of the conventional DLP by changing the aspect ratio of the hole that collects ion saturation current. It is also found that the electron saturation current of the FM-DLP is markedly reduced to the level of ion saturation current; thus, the current–voltage characteristics of the FM-DLP become similar to those of an emissive probe, which suggests the emissive-probe-like function of the FM-DLP. We have demonstrated that the FM-DLP can measure the plasma potential, which enables us to determine the calibration factor without other diagnostic tools. Therefore, it is concluded that the FM-DLP has a self-calibration capability for ion flow measurement.
Defect Reduction in Polycrystalline Silicon Thin Films at 150 °C
Authors: Sameshima Toshiyuki , Mizutani Yuta , Motai Katsuyuki , Ichimura Koji
Published: March 2010

We report defect reduction in 50-nm-thick laser-crystallized polycrystalline silicon (poly-Si) films by a combination of hydrogen plasma at 100 W for 5 s at room temperature with 4.7×105 Pa H2O vapor heat treatment at 150 °C for 6 h. The present treatment increased the photoconductivity to 1×10-3 S/cm for undoped poly-Si films under the illumination of 532 nm light at 100 mW/cm2. It also increased the electrical conductivity to 30 S/cm for 2×1019 cm-3 phosphorus-doped poly-Si films. Those values were comparable to those for samples treated with 1.3×106 Pa H2O vapor heat treatment for 3 h at 260 °C. Hydrogen concentration increased from 1.6 to 5.4 at. % as hydrogen plasma duration increased from 5 to 120 s. It was decreased by subsequent H2O vapor heat treatment at 150 °C, and ultimately ranged from 1.1 to 4.5 at. %. Hydrogen atoms play a catalytic role in the dissociation of H2O molecules at 150 °C.
Stress-Induced Off-Current under On- and Off-State Stress Voltages in Low-Temperature n-Channel Polycrystalline Silicon Thin-Film Transistors
Authors: Hirata Seishiro , Satoh Toshifumi , Tango Hiroyuki
Published: March 2010

The changes in off-current under on- and off-state stress voltages in n-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs) are investigated through measurements and simulations. It is found that the off-current increases markedly in the shallow-negative-gate-voltage region and decreases in the deep-gate-voltage region after applying both on- and off-state stresses, resulting in a weaker dependence on negative gate voltage. It can be supposed from the simulations and experiments that the donor-type trap states (positive charges) with a hump-type state profile, located at 0.1–0.2 eV below the midgap, and tail states are generated near the drain junction after applying both stresses. The amount of donor-type states increases in phonon-assisted tunneling with the Pool–Frenkel effect (PAT) and Schockley–Read–Hall generation (SRH) owing to the increase in the deep-trap-state density, and decreases in band-to-band tunneling (BBT) owing to the decrease in electric field, giving rise to a predominant PAT+SRH current in off-current in a wide-negative-gate-voltage region.
Gate Bias Instability under Light Irradiation in Polycrystalline Silicon Thin-Film Transistors
Authors: Kitakado Hidehito , Yasumatsu Takuto
Published: March 2010

We have investigated the charge trapping phenomena that occur in gate insulator biased under back-light irradiation of a liquid-crystal display. Two types of gate insulators (SiO2 and SiN
x
/SiO2) were evaluated. In both cases, it was found that electron trapping in the insulators is caused by light irradiation under gate bias stress and that the locations of the electron trapping in gate insulator vary according to the kind of insulator and the polarity of gate bias. As for the dependence of degradation on stress time and luminance, the phenomena can be explained by an approximate equation derived from first-order rate equation. Furthermore, it was found that the analysis of the light-induced degradation is valid for evaluation of insulator quality. We confirmed that gate insulators formed in different deposition conditions have different light-induced degradation rates.
Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique
Authors: Higashi Seiichiro , Sugakawa Kenji , Kaku Hirotaka , Okada Tatsuya , Miyazaki Seiichi
Published: March 2010

The electrical characteristics of thin-film transistors (TFTs) fabricated by thermal plasma jet (TPJ)-crystallized microcrystalline Si (µc-Si) films have been investigated. Amorphous Si (a-Si) films were crystallized with the TPJ under the scanning speed (v) of 350 to 550 mm/s, and µc-Si TFTs were successfully fabricated with a 300 °C process. By reducing v, µFE increases from 3.2 to 17.1 cm2 V-1 s-1, and V
th and S decrease from 9.2 to 5.2 V and 1.3 to 0.6 V/decade, respectively. The variations of µFE, V
th, and S were kept within small values of 1.06 (±4.4%), 0.14 (±1.1%), and 0.04 (±4.0%), respectively. The µc-Si is formed with ∼20-nm-sized randomly oriented small grains, and this isotropic nature results in very small variation of TFT performance. With decreasing v, the fraction of nano sized grains and disordered bonds at the grain boundary decreases, which results in improved TFT performance.
Meyer–Neldel Rule and Extraction of Density of States in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor by Considering Surface Band Bending
Authors: Jeong Jaewook , Jeong Jae Kyeong , Park Jin-Seong , Mo Yeon-Gon , Hong Yongtaek
Published: March 2010

In this study, we analyzed the temperature-dependent characteristics of amorphous indium–gallium–zinc-oxide (a-IGZO) thin-film transistors (TFTs). We observed that a-IGZO TFTs obey the Meyer–Neldel rule (MN rule) at low gate-to-source voltage (V
GS) and the inverse MN rule at high V
GS, both of which can be explained by the statistical shift of Fermi level and electrostatic potential. Large Fermi level movement for small V
GS change and the inverse MN rule, which are hardly observed for conventional amorphous TFTs, indicate that there is a very low density of state (DOS) in the sub-bandgap region for a-IGZO TFTs and the performance of TFTs is not affected by contact characteristics, respectively. By using the field-effect method and considering surface band bending, we extracted the DOS in the sub-bandgap region, the distribution of which is clearly distinguished by deep and tail states. The calculated parameters for tail and deep states were N
ta = 3.5 ×1017 cm-3 eV-1, E
ta = 0.18 eV, N
da = 1.6×1016 cm-3 eV-1, and σda = 0.21 eV.
Photo-Leakage Current of Zinc Oxide Thin-Film Transistors
Authors: Kamada Yudai , Fujita Shizuo , Hiramatsu Takahiro , Matsuda Tokiyoshi , Nitta Hiroshi , Furuta Mamoru , Hirao Takashi
Published: March 2010

The origin of photo-leakage current of zinc oxide thin-film transistors (ZnO TFTs) under light irradiation was investigated using a light shield technique. The irradiation position dependence revealed that the effect of light irradiation is much stronger near the source region in the channel than near the drain region. This can be explained by the enhanced carrier injection from the source electrode. The irradiation near the drain region, on the other hand, simply induced photocurrent, which is much smaller than the carrier injection on the source side. Therefore, completely transparent ZnO TFTs under visible light irradiation will be obtained, if the carrier injection from the source electrode is successfully suppressed.
Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor
Authors: Godo Hiromichi , Kawae Daisuke , Yoshitomi Shuhei , Sasaki Toshinari , Ito Shunichi , Ohara Hiroki , Kishida Hideyuki , Takahashi Masahiro , Miyanaga Akiharu , Yamazaki Shunpei
Published: March 2010

We fabricated an inverted-staggered amorphous In–Ga–Zn-oxide (a-IGZO) thin film transistor (TFT) and measured the temperature dependence of its characteristics. A threshold voltage (V
th) shift between 120 and 180 °C was as large as 4 V. In an analysis with two-dimensional (2D) numerical simulation, we reproduced the measured result by assuming two types of donor-like states as carrier generation sources. Furthermore, by ab initio molecular dynamics (MD) simulation, we determined the electronic structures of three types of a-IGZO structures, namely, “stoichiometric a-IGZO”, “oxygen deficiency”, and “hydrogen doping”.
Touch-Sensitive Active-Matrix Display with Liquid-Crystal Capacitance Detector Arrays
Authors: Park Hyun-Sang , Kim Yong-Jin , Han Min-Koo
Published: March 2010

We present two types of touch in-cell technology for active-matrix liquid crystal displays (AMLCDs) with liquid-crystal capacitance detector arrays embedded in a hydrogenated amorphous silicon (a-Si:H)-based backplane. The scanning method can determine and provide multiple simultaneous touch locations on the basis of the information extracted from each sensing element. On the other hand, the crossing method provides the position information from the coordinate information such that the system complexity and power consumption are expected to be considerably reduced. In both cases, by limiting the operation of sensors to the subthreshold region, we expect that the degradation of a-Si:H thin-film transistors (TFTs) will be suppressed and reliability will be ensured. Their relatively simple architecture enables the proposed touch-panel function to be readily integrated within large-area displays.
Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In–Ga–Zn-Oxide Thin Film Transistors
Authors: Osada Takeshi , Akimoto Kengo , Sato Takehisa , Ikeda Masataka , Tsubuku Masashi , Sakata Junichiro , Koyama Jun , Serikawa Tadashi , Yamazaki Shunpei
Published: March 2010

We designed, prototyped, and evaluated a liquid crystal panel integrated with a gate driver and a source driver using amorphous In–Ga–Zn-oxide thin film transistors (TFTs). Using bottom-gate bottom-contact (BGBC) thin film transistors, superior characteristics could be obtained. We obtained TFT characteristics with little variation even when the thickness of the gate insulator (GI) film was reduced owing to etching of source/drain (S/D) wiring, which is a typical process for the BGBC TFT. Moreover, a favorable ON-state current was obtained even when an In–Ga–Zn-oxide layer was formed over the S/D electrode. Since the upper portion of the In–Ga–Zn-oxide layer is not etched, the BGBC structure is predicted to be effective in thinning the In–Ga–Zn-oxide layer in the future. Upon evaluation, we found that the prototyped liquid crystal panel integrated with the gate and source drivers using the TFTs with improved characteristics had stable drive.
Active Matrix Touch Sensor Perceiving Liquid Crystal Capacitance with Amorphous Silicon Thin Film Transistors
Authors: Kim Cheol-Se , Kang Byung Koo , Jung Ji Hyun , Lee Min Jae , Kim Hun Bae , Oh Seung Seok , Jang Su Hyuk , Lee Hwan Joo , Kastuyoshi Hiraki , Shin Jong Keun
Published: March 2010

An active matrix touch sensor is integrated into a liquid crystal display (LCD) panel. The sensor is composed of a liquid crystal capacitor and a sensing circuit with amorphous silicon thin film transistors (a-Si TFTs). The change in sensor capacitance when the sensor is touched is converted into current change by the sensing circuit in the pixel. The proposed touch sensor is pressure-sensitive enough to work at an external push force of 10 gf. The simplified sensing circuit also gives an improved aperture ratio over that in previous work.
4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In–Ga–Zn-Oxide Thin-Film Transistors with Suppressed Variation
Authors: Ohara Hiroki , Sasaki Toshinari , Noda Kousei , Ito Shunichi , Sasaki Miyuki , Endo Yuta , Yoshitomi Shuhei , Sakata Junichiro , Serikawa Tadashi , Yamazaki Shunpei
Published: March 2010

We have newly developed a 4.0-in. quarter video graphics array (QVGA) active-matrix organic light-emitting diode (AMOLED) display integrated with gate and source driver circuits using amorphous In–Ga–Zn-oxide (IGZO) thin-film transistors (TFTs). Focusing on a passivation layer in an inverted staggered bottom gate structure, the threshold voltage of the TFTs can be controlled to have “normally-off” characteristics with suppressed variation by using a SiO
x
layer formed by sputtering with a low hydrogen content. In addition, small subthreshold swing S/S of 0.19 V/decade, high field-effect mobility µFE of 11.5 cm2 V-1 s-1, and threshold voltage V
th of 1.27 V are achieved. The deposition conditions of the passivation layer and other processes are optimized, and variation in TFT characteristics is suppressed, whereby high-speed operation in gate and source driver circuits can be achieved. Using these driver circuits, the 4.0-in. QVGA AMOLED display integrated with driver circuits can be realized.
Issues and Challenges in the Design of Culturally Adapted Evidence-Based Interventions
Authors: Castro Felipe González , Barrera Manuel , Holleran Steiker Lori K.
Published: March 2010

This article examines issues and challenges in the design of cultural adaptations that are developed from an original evidence-based intervention (EBI). Recently emerging multistep frameworks or stage models are examined, as these can systematically guide the development of culturally adapted EBIs. Critical issues are also presented regarding whether and how such adaptations may be conducted, and empirical evidence is presented regarding the effectiveness of such cultural adaptations. Recent evidence suggests that these cultural adaptations are effective when applied with certain subcultural groups, although they are less effective when applied with other subcultural groups. Generally, current evidence regarding the effectiveness of cultural adaptations is promising but mixed. Further research is needed to obtain more definitive conclusions regarding the efficacy and effectiveness of culturally adapted EBIs. Directions for future research and recommendations are presented to guide the development of a new generation of culturally adapted EBIs.
Prevention of Major Depression
Authors: Muñoz Ricardo F. , Cuijpers Pim , Smit Filip , Barrera Alinne Z. , Leykin Yan
Published: March 2010

Before the 1980s, no randomized controlled trials had been carried out to test whether major depressive episodes could be prevented. In the past 30 years, several trials have reported success in reducing the incidence (the number of new cases) of major depressive episodes. These studies suggest that major depression can be prevented. Given the large burden of disease caused by major depression, it is time for substantial systematic efforts to replicate these studies, carry out multisite trials, and widely disseminate prevention interventions found to be effective. The present review examines the conceptual and practical differences between treatment and prevention trials and the importance of identifying groups at high short-term risk for major depressive episodes to make prevention trials feasible. We also list the randomized controlled prevention trials that have been carried out to date and discuss the need for prevention interventions that go beyond the limits of traditional face-to-face interventions.
Violence and Women's Mental Health: The Impact of Physical, Sexual, and Psychological Aggression
Authors: Jordan Carol E. , Campbell Rebecca , Follingstad Diane
Published: March 2010

The reach of violence against women (VAW) has been profoundly felt by women across the United States and around the globe. VAW has been documented for decades as a legal and social justice problem, but as illuminated in this review, it is also a substantial mental health concern. A full understanding of the phenomenon must include discussion of how often it occurs, in what forms, and to whom. This review defines violence against women in its variant forms and examines the literature on the mental health effects associated with these abuse experiences. The effectiveness of the mental health system's response to the complex needs of women suffering battering, rape, stalking, and psychological aggression is also examined. The future of research and the important role of the discipline of psychology in the future of this field of study are discussed.
Prescriptive Authority for Psychologists
Authors: McGrath Robert E.
Published: March 2010

The proposal that psychologists should pursue prescriptive authority was first put forth 25 years ago, and it has been an official goal of the American Psychological Association for 15 years. Since then some form of prescriptive authority has been approved by three states, the Territory of Guam, and three branches of the military. Psychologists are also eligible to prescribe in the Public Health Service and the Indian Health Service. The movement has generated strong opinions both in favor and in opposition. Supporters focus particularly on increasing access to appropriate care and changing the role of psychologists within the healthcare system, while opponents raise concerns about how prescriptive authority will change professional psychology and whether psychologists will prescribe safely. This review provides a summary of milestones in the movement to date, as well as the arguments that have been raised for and against prescriptive authority.
Systematic Reviews of Categorical Versus Continuum Models in Psychosis: Evidence for Discontinuous Subpopulations Underlying a Psychometric Continuum. Implications for DSM-V, DSM-VI, and DSM-VII
Authors: Linscott Richard J. , van Os Jim
Published: March 2010

Diagnostic systems, phenotype models, and theories of etiology incorporate propositions on the underlying nature of psychosis and schizophrenia phenotypes. These propositions, whether implicit or explicit, are that the distributions of the phenotypes, or the phenotype experiences themselves, are dimensional or categorical. On one hand, evidence on the epidemiology of schizophrenia phenotypes suggests symptom phenotypes may not be bound by conventional diagnostic thresholds but instead may blend imperceptibly with subclinical, statistically frequent experience, supporting continuum viewpoints. On the other hand, evidence on the population structure suggests a latent categorical structure; the population may be composed of two types of people. However, both sets of evidence are beset by methodological limitations that point unequivocally to the need to move beyond current diagnostic conceptualizations, observation, and anamnesis of psychosis, and toward responsive and scientifically refutable formulations of schizophrenia.
Emotion-Related Self-Regulation and Its Relation to Children's Maladjustment
Authors: Eisenberg Nancy , Spinrad Tracy L. , Eggum Natalie D.
Published: March 2010

The development of children's emotion-related self-regulation appears to be related to, and likely involved in, many aspects of children's development. In this review, the distinction between effortful self-regulatory processes and those that are somewhat less voluntary is discussed, and literature on the former capacities is reviewed. Emotion-related self-regulation develops rapidly in the early years of life and improves more slowly into adulthood. Individual differences in children's self-regulation are fairly stable after the first year or two of life. Such individual differences are inversely related to at least some types of externalizing problems. Findings for internalizing problems are less consistent and robust, although emotion-related self-regulation appears to be inversely related to internalizing problems after the early years. Self-regulatory capacities have been related to both genetic and environmental factors and their interaction. Some interventions designed to foster self-regulation and, hence, reduce maladjustment, have proved to be at least partially effective.
Substance Use in Adolescence and Psychosis: Clarifying the Relationship
Authors: Barkus Emma , Murray Robin M.
Published: March 2010

Adolescence is a time of exploration of the self, and this exploration may involve the use of alcohol and drugs. Sadly, for some, adolescence also marks the first signs of a psychosis. The temporal proximity between the onset of substance use and of psychosis has been the cause of much debate. Here we review the association of alcohol, cannabis, stimulants, and other drugs with psychosis, and we conclude that the use of cannabis and the amphetamines significantly contributes to the risk of psychosis.
Cognition and Depression: Current Status and Future Directions
Authors: Gotlib Ian H. , Joormann Jutta
Published: March 2010

Cognitive theories of depression posit that people's thoughts, inferences, attitudes, and interpretations, and the way in which they attend to and recall information, can increase their risk for depression. Three mechanisms have been implicated in the relation between biased cognitive processing and the dysregulation of emotion in depression: inhibitory processes and deficits in working memory, ruminative responses to negative mood states and negative life events, and the inability to use positive and rewarding stimuli to regulate negative mood. In this review, we present a contemporary characterization of depressive cognition and discuss how different cognitive processes are related not only to each other, but also to emotion dysregulation, the hallmark feature of depression. We conclude that depression is characterized by increased elaboration of negative information, by difficulties disengaging from negative material, and by deficits in cognitive control when processing negative information. We discuss treatment implications of these conclusions and argue that the study of cognitive aspects of depression must be broadened by investigating neural and genetic factors that are related to cognitive dysfunction in this disorder. Such integrative investigations should help us gain a more comprehensive understanding of how cognitive and biological factors interact to affect the onset, maintenance, and course of depression.
Psychological Approaches to Origins and Treatments of Somatoform Disorders
Authors: Witthöft Michael , Hiller Wolfgang
Published: March 2010

Medically unexplained symptoms are the defining feature of somatoform disorders (SFD) as currently included in Diagnostic and Statistical Manual of Mental Disorders, Fourth Edition, and the International Classification of Diseases, Tenth Edition. Cognitive, behavioral, biological, and social variables are important to our understanding of SFD. Research in the past decade has highlighted the central role of (a) prolonged attention allocation to bodily sensations, (b) the dysfunctional role of catastrophizing symptoms as signs of severe illness, (c) neuroendocrine alterations, and (d) the influence of illness behavior (e.g., the avoidance of physical activity) on the maintenance and chronicity of SFD. Additionally, conditioning approaches have demonstrated that perceiving somatic discomfort can easily be learned. In addition to current models of etiology and pathogenesis, the existing evidence on the efficacy and effectiveness of psychotherapy for SFD is reviewed. Finally, future directions and some current blind spots in research on SFD are outlined.
Systemic activation of glutamate dehydrogenase increases renal ammoniagenesis: implications for the hyperinsulinism/hyperammonemia syndrome
Authors: Treberg Jason R. , Clow Kathy A. , Greene Katie A. , Brosnan Margaret E. , Brosnan John T.
Published: March 2010

The hyperinsulism/hyperammonemia (HI/HA) syndrome is caused by glutamate dehydrogenase (GDH) gain-of-function mutations that reduce the inhibition by GTP, consequently increasing the activity of GDH in vivo. The source of the hyperammonemia in the HI/HA syndrome remains unclear. We examined the effect of systemic activation of GDH on ammonia metabolism in the rat. 2-Aminobicyclo[2,2,1]heptane-2-carboxylic acid (BCH) is a nonmetabolizable analog of the natural GDH allosteric activator leucine. A dose of 100 μmol BCH/100 g rat resulted in a mild systemic hyperammonemia. Using arterial-venous (A-V) differences, we exclude the liver, intestine, and skeletal muscle as major contributors to this BCH-induced hyperammonemia. However, renal ammonia output increased, as demonstrated by an increase in A-V difference for ammonia across the kidney in BCH-treated animals. Isolated renal cortical tubules incubated with BCH increased the rate of ammoniagenesis from glutamine by 40%. The flux through GDH increased more than twofold when BCH was added to renal mitochondria respiring on glutamine. The flux through glutaminase was not affected by BCH, whereas glutamate-oxaloacetate transaminase flux decreased when normalized to glutaminase flux. These data show that increased renal ammoniagenesis due to activation of GDH can explain the BCH-induced hyperammonemia. These results are discussed in relation to the organ source of the ammonia in the HI/HA syndrome as well as the role of GDH in regulating renal ammoniagenesis.
Computational model of cellular metabolic dynamics: effect of insulin on glucose disposal in human skeletal muscle
Authors: Li Yanjun , Solomon Thomas P. J. , Haus Jacob M. , Saidel Gerald M. , Cabrera Marco E. , Kirwan John P.
Published: March 2010

Identifying the mechanisms by which insulin regulates glucose metabolism in skeletal muscle is critical to understanding the etiology of insulin resistance and type 2 diabetes. Our knowledge of these mechanisms is limited by the difficulty of obtaining in vivo intracellular data . To quantitatively distinguish significant transport and metabolic mechanisms from limited experimental data, we developed a physiologically based, multiscale mathematical model of cellular metabolic dynamics in skeletal muscle. The model describes mass transport and metabolic processes including distinctive processes of the cytosol and mitochondria. The model simulated skeletal muscle metabolic responses to insulin corresponding to human hyperinsulinemic-euglycemic clamp studies. Insulin-mediated rate of glucose disposal was the primary model input. For model validation, simulations were compared with experimental data: intracellular metabolite concentrations and patterns of glucose disposal. Model variations were simulated to investigate three alternative mechanisms to explain insulin enhancements: Model 1 (M.1), simple mass action; M.2, insulin-mediated activation of key metabolic enzymes (i.e., hexokinase, glycogen synthase, pyruvate dehydrogenase); or M.3, parallel activation by a phenomenological insulin-mediated intracellular signal that modifies reaction rate coefficients. These simulations indicated that models M.1 and M.2 were not sufficient to explain the experimentally measured metabolic responses. However, by application of mechanism M.3, the model predicts metabolite concentration changes and glucose partitioning patterns consistent with experimental data. The reaction rate fluxes quantified by this detailed model of insulin/glucose metabolism provide information that can be used to evaluate the development of type 2 diabetes.
Coronary endothelial function and vascular smooth muscle proliferation are programmed by early-gestation dexamethasone exposure in sheep
Authors: Volk Kenneth A. , Roghair Robert D. , Jung Felicia , Scholz Thomas D. , Lamb Fred S. , Segar Jeffrey L.
Published: March 2010

Exposure of the early-gestation ovine fetus to exogenous glucocorticoids induces changes in postnatal cardiovascular physiology. We sought to characterize coronary artery vascular function in this model by elucidating the contribution of nitric oxide and reactive oxygen species to altered coronary vascular reactivity and examining the proliferative potential of coronary artery vascular smooth muscle cells. Dexamethasone (dex, 0.28 mg·kg−1·day−1 for 48 h) was administered to pregnant ewes at 27–28-day gestation (term 145 days). Coronary arteries were isolated from 1- to 2-wk-old dex-exposed offspring and aged-matched controls. Compared with controls, coronary arteries from dex-exposed lambs demonstrated enhanced vasoconstriction to endothelin-1 and ACh that was abolished by endothelial removal or preincubation with the nitric oxide synthase inhibitor l-NNA, membrane-permeable superoxide dismutase + catalase, or apamin + charybdotoxin, but not indomethacin. The rate of coronary vascular smooth muscle cell (VSMC) proliferation was also significantly greater in dex-exposed lambs. Protein levels of the proliferating cell nuclear antigen were increased and α-smooth muscle actin decreased in dex-exposed coronary VSMC, consistent with a proliferative state. Finally, expression of the NADPH oxidase Nox 4, but not Nox 1, mRNA was also decreased in coronary VSMC from dex-exposed lambs. These findings suggest an important interaction exists between early-gestation glucocorticoid exposure and reactive oxygen species that is associated with alterations in endothelial function and coronary VSMC proliferation. These changes in coronary physiology are consistent with those associated with the development of atherosclerosis and may provide an important link between an adverse intrauterine environment and increased risk for coronary artery disease.