bluuebunny/crossref_metadata_2025 huggingface dataset:
Kinetische Untersuchung über die Eisbildung in Wasser
Authors: Terao Kunio , Ohtomo Yasuhiko
Published: November 2005

The time lag of ice formation in water which nucleates abruptly from a supercooled state was studied by means of a statistical method to obtain the ice formation probability.
The activation energy for the nucleation was calculated from the ice formation probability to be 50±20 kcal/mol. This value is much less than that calculated by using the classical nucleation theory, while the activation energy for the development of an ice nucleus was the same as the latent heat for the phase transition from water to ice. The ice formation probability was proportional to the cube of the pressure over the supercooled liquid.
Continuous Ellipsometric Determination of the Optical Constants and Thickness of a Silver Film during Deposition
Authors: Yamaguchi Tomuo , Yoshida Sadafumi , Kinbara Akira
Published: November 2005

A method for obtaining the optical constants and thickness of thin metal films during deposition using an automatic recording ellipsometer is described. The restored azimuthψ, the differential phase change on reflectionΔand the transmittance T have been continuously meaured during the film deposition. The optical constants and the packing factor are calculated from these three quantities and are given as functions of film thickness for various deposition conditions.
Defects Induced by Deep Diffusion of Phosphorus into Silicon
Authors: Yukimoto Yoshinori
Published: November 2005

Defects induced by diffusion of phosphorus in silicon have been found to develop to considerable distances beyond the diffusion front. The extension of dislocations into silicon has been found to depend on the surface treatment before diffusion. The X-ray diffraction topography has been used to study the structures and distribution of the lattice imperfections. When phosphorus is diffused in dislocation free silicon crystals, separated dislocation loops and precipitates as well as the ordinary dislocations are observed. Dislocation loops consist of hexagonal loops and disc shaped ones which have 1/3 <111> type Burgers vectors. The precipitate has an elastic strain with circular symmetry and may be considered to be phosphorus or phosphorus rich silicon. The mechanisms of the generation of these defects are briefly discussed.
Production of Strong Magnetic Field of Rectangular Pulse, and Its Application to Study of Relaxation Process in Ruby
Authors: Misu Akira , Aoyagi Kiyoshi , Kuwabara Goro , Kinoshita Kojiro , Suzuki Takeo
Published: November 2005

An apparatus is described which produces a strong magnetic field in a form of a rectangular pulse. The apparatus is composed of a coil for producing the magnetic field, a capacitor for storing electrical energy, and a pulse forming net-work. The maximum field obtained so far is 174 kOe. The rise time of the field is 200 µs. The field lasts for 700 µs. The overshoot of the magnetic field is less than 2 per cent of the average field strength. As an example of the application of the rectangular field a relaxation process in ruby is studied by employing an optical technique.
Experimental Study of Runaway Electrons in an Axial Field Plasma Betatron
Authors: Yatsu Kiyoshi
Published: November 2005

A formation of runaway electron beam in plasma by externally applied strong electric field and interactions of the runaway electron beam with the plasma were studied experimentally in a figure-eight shaped toroidal device. Accelerated electrons were a relatively small fraction of the electrons in the plasma. An intense microwave radiation was observed and measured in detail. A limit of the beam current and the radiation were found to result from instabilities caused by coupling of a slow wave of the beam aud plasma waves.
Growth Hillocks and Crystal Structures in Heteroepitaxial CdS Deposited on GaAs
Authors: Igarashi Osamu
Published: November 2005

CdS layers were grown on {111} faces of GaAs in an atmosphere of hydrogen gas by evaporation method. Deposition temperatures were from ∼720°C to ∼860°C. Characteristic growth patterns were observed on the as-grown surfaces of CdS. The crystal structures of the CdS films deposited on the {111} “As-face” of GaAs were found to depend upon the deposition temperature. At higher temperatures (substrate temperatures \gtrsim840°C) epitaxial growth of the hexagonal phase occurs, while at lower temperatures \lesssim800°C) mixed cubic and hexagonal structures are found in early stages of growth, followed by the prevalence of the cubic phase as the growth proceeds. The origin of star-like growth hillocks observed on the CdS films on the {111} “As-face” of GaAs is discussed.
Minority Carrier Lifetime in GaP Electroluminescent Diodes
Authors: Maeda Keiji , Kasami Akinobu , Toyama Masahru , Wakamatsu Nobuyuki
Published: November 2005

Diffusion length of minority carriers in GaP EL, diodes was determined by measurements of diode photocurrent. Observations of angle-lapped diodes by scanning of electron beam and laser light enabled us to divide the sum of diffusion lengths into the diffusion lengths of electron and hole. Minority carrier lifetime in the space-charge region obtained from I-V characteristics is in reasonable agreement with that determined from photocurrent. The minority carrier lifetime is limited by deep recombination centers which are common in both the depletion layer and its adjacent regions. These centers were found to be annihilated by annealing.
For diodes annealed under optimum conditions, the minority carrier lifetime varies proportionally to an inverse of the donor concentration of starting n type GaP crystals and is proportional to an inverse square of the free carrier concentration in the vicinity of the junction. These results suggest that an Auger process is predominant in the nonradiative recombination.
Studies on (110) Fractured Faces of NaCl and Their Etch Patterns
Authors: Patel A. R , Chaudhari R. M
Published: November 2005

Fracture has been produced on NaCl crystals along (110) planes. The fractured surfaces are examined by multiple beam interferometry and it is found that they consist of elevated ridges and depressed valleys. Matched pairs of fractured faces have been etched and one to one correspondence in the number and position of the boat shaped pits have been established. While etching some fractured faces pyramidal hillocks have been observed. These hillocks have been studied in detail by successively etching the surface for two different periods and also by producing them on matched pairs. It is observed that they have no correlation on matched faces. The implications are discussed.
Growth and Some Electrical Properties of Orientated Fibriform Crystal of SbSI
Authors: Masuda Yoichiro , Sakata Koichiro , Hasegawa Syuzo , Ohara Gisaku , Wada Masanobu , Nishizawa Minoru
Published: November 2005

The dielectric and piezoelectric properties of the orientated fibriform crystal of SbSI grown by the Bridgeman method under high pressure, have been investigated.
As-grown fibriform crystal of SbSI is an aggregate of many densely packed single crystalline needles orientated nearly parrallel to ingot axis which is ferroelectric axis (c-axis).
The dielectric constant (ε
33
T is about 6400 at the Curie point (10°C). The electro-mechanical coupling factor (k
33) shows a high value of about 70–74% constantly in range of temperature from -50 to -10°C and rapidly decreases near the Curie point. The piezoelectric modulus (d
33) shows the highest value of 8×10-10 (C/N) near the Curie point.
The temperature dependence of the frequency constant (f×l), elastic compliance co-efficnents (S
33
D, S
33
E), spontaneous polarization (P

s3) and chemical analysis are discussed.
Diffusion of Cadmium in Gallium Arsenide
Authors: Fujimoto Masatomo , Kudo Kiyoshi , Hishinuma Noboru
Published: November 2005

The diffusion process of cadmium into gallium arsenide from the gaseous phase has been investigated as a function of temperature and arsenic vapor pressure by means of the radio-activation analysis and electrical conductivity method. The diffusion profile of cadmium without excess arsenic vapor follows the complementary error functions and its temperature dependence can be described well by the equation D=D
0exp
(-E/kT), where E, the activation energy of diffusion, is 2.2 eV and D
0 is 1.3×10-3 cm2 sec-1. The surface concentrations and the diffusion depth of cadmium increase as the cadmium vapor pressure increases. Under the excess arsenic vapor, the diffusion profiles of cadmium are given by two overlapping complementary error functions. The effective diffusion coefficients of cadmium, as obtained from both branches of the diffusion profiles, are found to increase in proportion to the fourth root of the arsenic vapor pressure. These results suggest that the diffusion of cadmium into gallium arsenide proceeds through the gallium sublattice of the crystal.
The Loss Characteristics of a Semiconductor Travelling Wave Amplifier
Authors: Furukawa Seijiro , Hata Tomonobu , Horiguhchi Shoji
Published: November 2005

This paper presents a theoretical analysis on the effect of space harmonics in STWA. It has been proven that even if no gain can be predicted by considering only the principal harmonic component, the total gain is obtained by the effect of the other space harmonic components. This paper also presents the considerations of (1) the effect of the gap between the fingers of the circuit, (2) the effect of the gap between the current sheet and the circuit, (3) the effect of the loss of the circuit, and (4) the advantage of using the backward type slow wave circuit.
Dye Sensitization of Photoconductivity of Poly-N-Vinylcarbazole. I. Quantum Yield
Authors: Ikeda Mitsusuke , Morimoto Kazuhisa , Murakami Yoshinobu , Sato Hisanao
Published: November 2005

The photocurrent of the dye-sensitized poly-N-vinylcarbazole (PNVC) film was measured. The dyes were used carbonium salts, benzopyrylium salts and crystal violet. These dyes were found to enhance the photocarriers in the film both at the first excitation band of PNVC and at the excitation band of the dyes. Since photocarriers were observed to be holes, it is concluded that the electron transfer occurs from PNVC to dyes with the absorption of photons and that the quantum yield of photocarriers is related to the rate of this electron transfer. The quantum yield was deduced from the combination of the photocurrent and the decay rate of the surface charge and was found to be more than 10-1 for the excitation of PNVC and 10-2∼10-1 for the dye-excitation.
Annealing Effects of a Diffused GaAs Junction Laser
Authors: Yonezu Hiroo , Mineta Hiroshi , Kawaji Akira
Published: November 2005

The annealing effect, namely the reduction of the threshold current densities in diffused type GaAs junction lasers at room temperature, was investigated. The optimum annealing temperature changes with the concentration of impurity in the substrate. It was found that annealing 2 h at 900°C and 2 h at 950°C is the best for 1.1×1018 and 9.3×1018 cm-3 Te doped substrates, respectively. In a lightly doped diode the improvement of internal quantum efficiency is decisive for the reduction of threshold current density. In a highly doped diode the reduction of diffraction loss should also be considered. Further band tailing does not occur in the lightly doped diode by annealing.
Fiber Texture of Silver Films made by Evaporation onto Cold Substrate
Authors: Oshima Ryuichiro , Nakamura Yasuyuki
Published: November 2005

A specially designed evaporater and cryostat were equipped in a diffraction specimen chamber of an HU–11A electron microscope. In this apparatus 99.999 % silver granules were evaporated onto a polished polycrystalline copper substrate at various temperatures and prepared films were observed at 77°K by the reflection electron diffraction. The films condensed at 77°K with a deposition rate of about 20 Å/sec. showed a remarkable fiber texture in which the <111> and <100> axes of the crystallites are normal to the substrate surface. This texture disappeared when annealed at 373°K. On the other hand, films prepared at 105°K and the room temperature showed normal Debye-Scherrer patterns with no or another very weak fiber texture. On the basis of these experimental results, the formation mechanism of the low temperature fiber structures was discussed by taking into account of the effects of the deposition and reevaporation rates and the surface diffusion on the growth of the crystallites.
Kinetics of the Vapor Growth of II-VI Compound Crystals. II. Zinc Selenide
Authors: Toyama Masaharu , Sekiwa Tetsuo
Published: November 2005

Vapor growth of ZnSe crystals was made by a modified Piper method in Ar atmosphere at relatively low temperatures, 1490°K and 1400°K. Temperature gradient was varied from 1.6 to 7.0 deg/cm and Ar pressure from 0.20 to 0.33 atm at 1490°K and from 0.03 to 0.09 atm at 1400°K. Single crystals of the size of 1 cm3 were obtained at 1490°K. The growth rate was measured to be ranging from 10-8 to 10-7 mol/cm2 sec, and found to be limited by the diffusion process of vapors at 1490°K but, if anything, by the vaporization or condensation process at 1400°K at low Ar pressures. Vaporization-rate constant under equilibrium vapor pressure, k

s
, was estimated to be at least 2×10-3 mol/atm3/2cm2 sec at 1400°K.
Behaviour and Mechanism of the Allotropic Transformation of Cerium
Authors: Shimura Kazuteru
Published: November 2005

When cerium is subjected to the thermal cycling between room and liquid air temperatures, the amount of α phase increases after each cycle as the electrical resistance changes accordingly, where the changing manners of both factors are quite similar. However, although terminal temperatures of the thermal cycling are far different from the transformation temperature, the amount of phase change never attains 100%, but a certain equilibrium value. In this paper, the transformation mechanism of cerium was discussed theoretically, while an attempt was made to give a theoretical explanation upon the above mentioned attainment of an equilibrium, utilizing the theory of martensite formation in carbon steel by Cohen, et al, considering the size effect due to the subdivision of crystal grains by the formed martensite leaves. The experimental part of this study was previously reported by the author at Virginia Academy of Science meeting.
Light Modulation in 45°Z cut KH2PO4 and Its Isomorphs
Authors: Kojima Hiroomi
Published: November 2005

Taking account of the light modulator construction with 45°Z cut KDP and its isomorphs, following experiments were done.
(i) As the degree of polarization P=(I
max-I
min)/(I
max+I
min) was varied by the accuracy of the [11̄0] faces parallelism θ, the dependence of P on the modulation degree m was measured. Here, I
max and I
min are a maximum value and a minimum value of the intensity, respectively.
(ii) The dependence of (l/d) on the modulation degree m were measured. Here, l and d are the thickness along the light path direction of the crystal and the field direction, respectively. From the results it was found that the obtained modulation degree was proportional to (P(l/d)) at constant applied voltage.
Precipitates with a Defect Structure in Thin Film of NiO
Authors: Katada Kinya , Nakahigashi Kiyotaka , Shimomura Yasumitsu
Published: November 2005

Thin films of single crystal of NiO are prepared by the method initiated by Cech and Alessandrini. The films are heated at 1400∼1600°C in air and are examined by means of electron microscopy and electron diffraction. Many coherent particles of a second phase with characteristic shapes appear in the matrix film of NiO. They have a defect structure of Ni-deficient NiO, which is of spinel-type. Growth and morphology of the precipitates are observed and discussed.
Recovery Process in Thin Films of Noble Metals Vacuum-Deposited on Low Temperature Substrate
Authors: Yamakawa Kohji , Nakao Masakazu , Fujita F. Eiichi
Published: November 2005

Recovery of electrical resistivity of pure Au, Ag and Cu thin films deposited in vacuo on a mica sheet kept at liquid helium temperature was studied. Recovery process of Au films consists of several substages below 80°K, which are similar to those found in irradiated Au: The point defect recovery is strongly suggested. In the higher temperature region, both the point defect recovery and grain growth seem to be involved in the recovery process. The activation energies for recovery range from 0.013 eV (at 13°K) to 0.14 eV (at 55°K). The reaction is of the first order at around 25°K. Similar results have been obtained for Ag.
In contrast to Au films, Ag and Cu films show remarkable reverse annealing between 20°K and 40°K, which presumably is closely connected with residual gas molecules such as oxygen. Some possible mechanisms of reverse annealing are also discussed.
A Current Instability in TiO2 Thin Film
Authors: Hada Toshio , Hayakawa Shigeru , Wasa Kiyotaka
Published: November 2005

The current instability is observed in the sputtered TiO2 thin films of Au-TiO2-Ti sandwich system under the application of positive bias on Au electrode. The process of the present current instability is studied in relation to the hydrogen ion conduction in the TiO2 thin films. As a result, the process is conjectured as follows: 1) dissociation of adsorbed water at Au-TiO2 interface, 2) injection of H+ into TiO2 at the positive bias, 3) migration of H+ through TiO2 under the applied field. Dissociation of water results from a coarse texture of the film surface. From the current response at the recovery of the current instability, the diffusion activation energy of H+ in the TiO2 films is estimated at 0.07 eV which is in good agreement with the value in TiO2 single crystal.
Colloidal Absorption Band in Additively Colored Potassium Chloride Containing Copper
Authors: Takeuchi Nozomu , Asami Kumiko , Ishiguro Masakazu
Published: November 2005

It is found that a colloidal absorption band in additively colored KCl : Cu crystals shifts toward violet with the increasing concentration of copper. A discussion is given by free electron theory of metal. The number of electrons per copper atom participating in the resonance within the colloidal particle is determined as 0.30, and the shift of the band peak suggests the existence of the surface excess of copper on colloidal potassium spheres.
Injection Electroluminescence in Gallium Antimonide
Authors: Sonomura Hajimu , Miyauchi Takeshi
Published: November 2005

Electroluminescent spectra have been measured for four types of gallium antimonide: undoped p-type, Zn-doped p-type, Sn-doped p-type and Se-doped n-type samples. All the radiations are considered to be due to recombinations of electrons and holes via impurity centers. The levels of recombination centers are estimated to be about 0.06 eV for undoped, 0.055 eV for Zn-doped and Sn-doped, and 0.01 eV for Se-doped samples. These values are consistent reasonably with ionization energies of an acceptor and a donor in GaSb calculated from the simple hydrogen like model. As compared with the present results, the emission lines of about 0.72 eV and 0.78 eV at 77°K observed frequently in GaSb p–n junctions may be interpreted to be due to the recombinations in the p-region and in the n-region, respectively.
Electric Fields Due to a Point or a Line Charge in Two Dielectric Layers on a Conducting Plane
Authors: Ishibashi Ryozo , Takashima Takeshi , Furukawa Syuji
Published: November 2005

Electric fields due to a point charge located in two dielectric layers on a conducting plane are sought. By an extensive application of the theory of images, the fields are expressed accurately in the form of infinite series of image charges. The series are convergent and the fields may be calculated. In the case of a line charge, the same expressions as in point one are presented.
Application of Electron Probe Microanalysis to Heterogeneous Structure in Metals and Alloys
Authors: Isogai Akio
Published: November 2005

Factors governing the intensity of the characteristic X-ray beam radiated from an alloying element distributed heterogeneously in the matrix have theoretically been considered, and it has been shown that the intensity depends largely on the state of distribution of the element, introducing correction terms due to the effects of scattering process of incident electrons and of the self absorption of the characteristic X-ray beam of the element. The comparison of the values calculated by the proposed equation with the experimental results obtained from binary alloys of Al-Si and Al-Cu and an internally oxidized copper alloy has shown a satisfactory agreement.
Radiation Dosimeter Using Peroxy Radicals in Irradiated Polytetrafluoroethylene
Authors: Tamura Naoyuki , Oshima Yunosuke , Yotsumoto Keiichi , Sunaga Hiromi
Published: November 2005

A new method of radiation dosimetry using peroxy radicals in irradiated polytetrafluoroethylene (PTFE) has been developed. The PTFE used is in powder form. The results show that this dosimeter is useful for both electron and 60Co gamma-ray irradiation. The concentration of the peroxy radicals linearly increases with dose up to 100 Mrads and does not depend on the dose-rate. The peroxy radicals formed by irradiation are stable during prolonged storage, and handling of the sample is easy. The behavior of the peroxy radicals in the irradiated PTFE is discussed.
Ultrasonic Transducers with Flexurally Vibrating Diaphragms for Use in Air. II
Authors: Matsuzawa Kiichiro
Published: November 2005

Directional characteristics have been studied for the ultrasonic transducers reported in the previous paper (Japan. J. appl. Phys. 9 (1970) 235). Their experimental directional characteristics are in good agreement with theoretical ones. The sound pressure produced by each transducer is in good agreement with that calculated from the theoretical directional characteristics and the experimental efficiency. Also a simple theoretical method is presented which permits a rough estimation of the directional characteristics of the transducers.
Partially Space-coherent Diffraction by a Slit Aperture with an Apodizing Screen
Authors: Katti P. K. , Singh K. , Gupta B. N.
Published: November 2005

Diffraction of partially space coherent light by a slit-aperture with an apodizing filter has been examined theoretically. Results have been presented for the irradiance distribution in the Fraunhoffer diffraction images for exponential and sinc forms of correlation of vibrations across the diffracting aperture. Tolerance and apodization coefficients have been calculated for the number of correlation intervals contained in the aperture, for the various values of the amplitude filter-parameter.
Cherenkov Radiation due to Passage of an Oscillating Dipole
Authors: Khan R. M.
Published: November 2005

Simple expressions of radiation caused by an oscillating dipole moving with a uniform velocity have been deduced. Region of radiation is much wider than that of usual Cherenkov radiation. Some interesting features as two cones of radiation, existence of radiation in the non-Cherenkov region and the interference like phenomenon in the intensity of radiation are found which are not present in the usually traced Cherenkov radiation.
NMR Measurements on 60Co γ-Ray Irradiated Polytetrafluoroethylene with High Radiation Doses
Authors: Tutiya Mituaki
Published: November 2005

The effects of 60Co γ-irradiation and post-irradiation heat treatment on NMR line of PTFE are studied over the temperature range -50°C to 50°C for a total dose of 8.9×108R. Lowering of transition temperature associated with crystalline regions of PTFE, narrowing of the line width of broad component, broadening of the line width of narrow component, and appearance of very sharp line component are observed in the NMR line shape of the irradiated PTFE. When the irradiated PTFE is annealed near the melting temperature, the very sharp line component disappears and the transition temperature shifts to higher temperature, differing from that of the unirradiated PTFE. This difference is considered to be associated with the decrease in the average molecular weight of the irradiated PTFE. Changes resulting from post-irradiation heat treatment can be attributed to the removal of defects and low molecular weight products trapped within PTFE. No charge is observed in the line width or narrow component by post-irradiation heat treatment.
Dissociative Diffusion of Gold in Silicon
Authors: Yoshida Masayuki , Saito Ken
Published: November 2005

The criterion, previously proposed by one of the authors, for the assumption in the dissociative diffusion that the interstitial atoms (or vacancies) are in thermal equilibrium, is applied to the diffusion of gold in silicon, and it is concluded that the interstitial gold atoms can be assumed to be in thermal equilibrium. Specimens with different thicknesses, oxygen concentrations and dislocation densities, which are sinks and sources of interstitial gold atoms and vacancies, are used in the experiment. The diffusion characteristics of gold are analyzed on the basis of the dissociative mechanism, using the model of fixed and variable sinks and sources of vacancies. Then the assumption of thermal equilibrium of interstitial gold atoms is experimentally verified. The activation energy of self-diffusion of silicon, 4.5 eV, obtained from the analysis of the experimental results, is equal to that obtained from the experiment of dissociative diffussion of nickel in silicon.
The Numerical Analyses of the Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. Part II. Effects of the Crucible Rotation
Authors: Kobayashi Nobuyuki , Arizumi Tetsuya
Published: November 2005

Flow pattern of melt and temperature profile are calculated numerically in a crucible in which a crystal is grown by a Czochralski method. The calculation is carried out for cases both the crystal and the crucible are rotated and is compared with the case the crystal only is rotated (Kobayashi and Arizumi: Japan. J. appl. Phys. 9 (1970) 361). The flow pattern behaves differently depending on the relative sense of rotations of the crystal and the crucible. With the same sense of rotation, the flow induced by crystal rotation extends to the bottom of the crucible, and the interface shape becomes more concave towards the melt as the crystal rotation rate increases. The counter rotation makes the flow pattern similar to that caused by crystal rotation alone. The interface shape becomes less concave for low crystal rotation rate and changes to be more concave through most flat with the increase of the crystal rotation.
On <100> Versus <111> Slip in BCC Metals
Authors: Chin Gilbert Y.
Published: November 2005

The problem of competition between {110}<001> slip and {11̄0}<111> or {1̄1̄2}<111> slip in bcc metals has been analyzed using crystal plasticity theory. It is concluded that {11̄0}<111> slip will occur in preference to {110}<001> if the critical resolved shear stress ratio, τ{110}<001>/τ{11̄0}<111>exceeds 1.732; and that {1̄1̄2}<111> slip will be preferred to {110}<001> If the ratio τ{110}<001>/τ{1̄1̄2}<111>exceeds 2. These values are not extremely large as implied by the recent work of Takeuchi, who attempted, but failed, to enforce {110}<001> slip by plane strain compression of a Fe-2%V crystal in the (110)[1̄10] orientation.
Thick Target Yields of Characteristic X-Rays by p, d, 3He+ and 4He+ Bombardments
Authors: Shima Kunihiro , Sakisaka Masakatsu , Kokado Masayuki , Yamamoto Takehisa , Makino Isao
Published: November 2005

Characteristic X-ray yields by p, d, 3He+ and 4He+ bombardments have been measured for various thick metallic elements in the incident energy range from 90 to 360 keV. The combination of incident particles, target materials and produced characteristic X-rays is given as: (a) Al–K, Ti–K, Ni–K, Cu–K, Ni–L, Cu–L, Zr–L, Mo-L, Ag–L, Cd–L, Sn–L, Ta–M, W–M, Pt–M and Pb–M for proton bombardment, (b) Al–K, Ti–K, Cu–K, Ni-L, Cu–L, Zr–L, Mo–L, Ag–L, Cd–L, Sn–L, Ta–M, W–M, Pt–M and Pb–M for deuteron bombardment, (c) Al–K, Ni–L, Cu–L, Mo–L, Ag–L and W–M for 3He+ bombardment, (d) Al–K, Ni–L, Cu–L, Mo–L, Ag–L, W–M, Pt–M and Pb–M for 4He+ bombardment.
The thick target yields against particle energy have been found to increase more steeply as target atomic number becomes larger. The behaviors of yield ratios of I
µ(d)/I
µ(P) and I
µ(4He+)/I
µ(3He+) have been qualitatively explained by the effect of average charge of the incident particles.
The Effect of Plastic Deformation on the Electrical Resistivity of a Cu–4wt% Ti Alloy with Modulated Structure
Authors: Saito Kazuo , Watanabe Ryoji
Published: November 2005

Resistivity changes during tensile deformation at 77°K and at room temperature were observed for as-quenched and annealed specimens of Cu–4wt% Ti alloy. It was found that the resistivity of each specimen usually increased during plastic deformation at 77°K, but for room temperature deformation the resistivity of the specimens annealed at 450°C for more than 1 hour decreased with the increase in strain. The last mentioned unusual decrease in resistivity is interpreted in terms of the segregation of solute atoms to moving dislocations and the formation of solute-rich atmosphere in the matrix.
Depth Distribution of Characteristic X-rays in EPMA Alloy Targets I. Angular Distribution and f(χ)-Curves of Fe K X-rays in Fe-Al Alloy Targets
Authors: Shimizu Ryuichi , Murata Kenji , Fujiwara Masayuki
Published: November 2005

Angular distributions of Fe K X-rays from pure iron and Fe-Al alloy up to 45° were obtained by the method of the angular distribution measurement. Thef(χ)-curves obtained for pure Fe and Fe-Al alloy targets show distinct difference between them. And it is found that there is remarkable discrepancy between experimentalf(χ)-curves and calculated ones by Philibert equation for the alloy specimen of larger Al-content.
Free Carrier Faraday Effect in n-Type InSb with a Submillimeter-Wave Laser
Authors: Shimura Mikihiko , Takeuchi Nobuo , Yajima Tatsuo
Published: November 2005

Free carrier Faraday rotation and ellipticity in n-type InSb have been measured at 105°K by the use of an HCN laser of 337 µm in the range of magnetic field including cyclotron resonance. The experimental results were in good agreement with the classical theory based on the Drude free electron model except in the vicinity of the cyclotron resonance field. The effective mass, the density and the relaxation time of conduction electrons were determined simultaneously only from the Faraday rotation by means of the best fit method. Near the cyclotron resonance field, the Faraday ellipticity showed a considerable discrepancy between measured and calculated values, which has not been explained even by considering the nonparabolicity of energy bands.
Fine Structures of the X-Ray Absorption Spectra for Thin Films of Metallic Coppers
Authors: Kubo Hayao , Nakamori Hiroo , Tsutsumi Kenjiro
Published: November 2005

The fine structures of x-ray K absorption spectra of metallic copper for various thickness are measured by a tube spectrometer with a Geiger-Müller counter. Copper films in the range of thickness 0.15 µ to 8 µ are prepared by vacuum evaporation. The absorbers consist of several sheets which are cut from a thin film with a given thickness and then superimposed one upon the other to be the same thickness in all cases when several thin films with different thickness are used. Single films with various thickness are also used as absorbers. The fine structures of the absorption spectra nearly coincide with each other for various absorbers and do not show appreciable dependence upon the absorber thickness.
Information Capacity of Radiographic Images for Circular Defects
Authors: Kanamori Hitoshi , Murashima Sadayuki
Published: November 2005

Based upon the theory of Wiener spectrum of the random signal, capacities for the circular or rotationally symmetric isolated defects, which are to be detected in non-destructive testing and in medical diagnosis, are introduced. The formulae for capacity are the same with those for the continuous signal given in a previous paper [Japan. J. appl. Phys. 9 (1970) 182] except that the object spectrum is the square Fourier transformation of the slit-scanned image of the defect. Numerical examples of the capacity are given for the cylindrical, conic, and Gaussian-type defects as a function of radius. The capacity for a small radius coincides with the random signal case, and it decreases with the increase of radius. For the large radius defect, the capacity is proportional to the inverse square radius and the order of the capacity is inverted from that for the random signal. These two effects for the cylindrical defect appear at larger radius than for other two, because of the broader object spectrum.
On-line Particle Identification Using the Table Look up Method
Authors: Husimi Kazuo
Published: November 2005

The table look up method is applied to the on-line particle identification based on the range relationship proposed by Goulding to reduce the dead time caused by processing of the computer. The quantizing error and the program technique are discussed. The particle identification spectrum, energy spectra of 3He and alpha particles and the total energy spectrum are obtained with sufficient precision. The on-line particle identifier is advantageous in that, not only is it easy to handle, but is also has flexibility compared to the analog circuit particle identifier.
Effect of Recovery on the Plastic Deformation of β-Tin Single Crystals
Authors: Yomogita Kazuo
Published: November 2005

The tensile tests with constant stress or constant strain rate and the stress relaxation tests have been carried out on single crystal plates of 99.999% pure tin. In the tensile tests specimens are stretched at high speed, then unloaded or kept under constant stress for several minutes and stretched again at low speed. In these tests the effect of recovery on the final stage deformation is studied. The results indicate that the recovery process proceeds more rapidly under larger constant stresses or at higher temperatures. A model on the plastic deformation is postulated and applied to various experimental conditions. The calculation agrees well with the measurements.
Studies on Adsorption and Nucleation of Ge on Tungsten Surface by FEM
Authors: Kim H. , Araki H. , Sugata E.
Published: November 2005

The formation of Ge nucleus on the tungsten surface kept at 77∼730°K has been investigated by Field Emission Microscope. Ge atoms deposited at low temperature are stacked on the impacted places. At above 400°K, deposited Ge atoms spread out over the surface to form a uniform thin layer on which small nuclei are formed. At 580°K the nucleus prefers to form on the close packed {110} planes at the impinging rate of 4×1013 atom/cm2-sec. At 730°K the bridge types are formed between {111} and regions around {100} at the same rate. Even at 730°K, the nuclei are formed on the {110} planes at the rate 1×1014 atom/cm2-sec, finally these nuclei coalesce to large crystallites on the loosely packed {111} and around {100} planes. The estimated sizes of a nucleus and a crystallite are 8 Å in diameter and 520×180 Å, respectively.
Silicon Nitride Prepared by the SiH4-NH3 Reaction with Catalysts
Authors: Yamazaki Shumpei , Wada Kunihiko , Taniguchi Ichiro
Published: November 2005

The application of catalysts to chemical vapor deposition process to activate reactive species is shown effective in improving electrical properties of Si-Si3-N4 systems. N

F
B
of the Si-Si3-N4 system prepared by the catalytic method is about one tenth of N

F
B
of those prepared by the conventional method. The catalysts of NiO and Pt are applied to the ammonia and silane respectively. The catalysis seems to be effective to reduce the deposition temperature by about 100°C. The density of the interface states is about 1×1011 cm-2 and the peak energy levels of donor and acceptor states are 0.43 eV and -0.47 eV respectively. Infection type hysteresis loops are always observed in the inversion region of both p- and n-type samples at a low temperature. The hysteresis is proportional to the film thickness and is independent of the preliminary treatments.
Forward Characteristics of Si Schottky Diodes
Authors: Morino Akihiko , Sugano Takuo
Published: November 2005

Results of detailed examination on Crowell-Sze's thermionic-diffusion theory on forward current-voltage characteristics of Schottky diodes and development of the theory using the procedure proposed by Stratton are presented. From the thermionic-diffusion theory, it is found that the change of the quasi Fermi level in the space charge region of the semiconductor is less than the thermal energy and, furthermore, effect of electrons' space charge on the current-voltage characteristics is small and negligible. Numerical integration of Boltzmann's equation indicates that paramer n of the forward characteristics deviates from unity, the more at the higher current density, and calculated electron temperature is higher than the lattice temperature. Current density and distribution of the electron temperature presented in this paper are different from those reported by Stratton. These are due to the differences in the boundary conditions at the metal-semiconductor contact.
Photoluminescence Study of the Interface between GaAs Epitaxial Layer and its Substrate
Authors: Nakashima Hisao , Hirao Motohisa
Published: November 2005

Photoluminescence measurements are used to study the cause of abnormal interface phenomena, such as non-ohmic behavior or a dip in the carrier concentration profile observed at the interface between a GaAs vapor epitaxial layer and its substrate. From measurements taken on epitaxial crystals grown at different conditions, the emission band which was supposed to be caused by copper impurities are observed at the interface. Therefore these abnormal interface phenomena are probably associated with copper impurities.
M-Induced Anisotropy in Electrodeposited Polycrystalline Permalloy Films
Authors: Maeda Hiroshi , Morimoto Ichiro
Published: November 2005

M-induced uniaxial anisotropy, Ku, is investigated for electrodeposited polycrystalline permalloy films in a range from 40 to 100% Ni. The observed Ku is composed of two terms which are respectively sensitive and insensitive to annealing treatment below 200°C. These terms correspond to the terms due to magnetostrictively induced anisotropic strain and directional ordering of iron pairs, respectively. The latter separated from the observed Ku by annealing below 200°C is in good agreement with the data obtained for bulk permalloy. The observed Ku can be quantitatively fitted to the sum of the former deduced theoretically and the latter obtained experimentally except for near 100% Ni films, if inhomogeneous composition of film along the thickness is evaluated. In a case of near 100% Ni, the values of Ku are considerably smaller than that deduced from the theoretical model. This may be related to the high angular dispersion of easy axes of the films.
Optical Transfer Function of Concave Grating Spectrometer Based on Wave Optical Method
Authors: Katayama Tsuneo , Takahashi Akio
Published: November 2005

Optical transfer functions (OTF) of two types of spectrometer – Eagle mounting and Seya-Namioka mounting – are calculated by the wave-optical method which defines the OTF as the autocorrelation function of the pupil. Results obtained are compared with previous results of the present authors and interpreted as effects of diffraction and aberration on the broadening of point image. The OTFs are calculated also by Fourier transformation of the intensity distribution of point image and compared with those obtained by the first method.
Ultrasonic Transducers with Flexurally Vibrating Diaphragms for Use in Air
Authors: Matsuzawa Kiichiro
Published: November 2005

Experiments have been performed on the design and performance of a new type of transducers for ultrasonic measurements in air, constructed of magnetostrictive vibrators, metallic horns and rectangular diaphragms made of thin metallic plate, and operated at frequency ca. 30 kHz.
When the dimensions of the diaphragm are optimum, the nodal lines on it are parallel with and equidistant from one another. It has been found that the efficiency of our transducers is 55∼81% at low powers. The sound pressure produced at 1 m distance from any of them when it is supplied with 1 W electric power has been found to be 0.3∼0.5 mbar.
Origin of the High Field Domains in Piezoelectric Semiconductors (A phenomenological Theory)
Authors: Ogawa Tomoya
Published: November 2005

The current oscillations which are observed in piezoelectric semiconductors, such as CdS, are often accompanied by a high field domain which moves through the sample at the velocity of sound. A phenomenological explanation of the high field domains is given by in the following manner: Voltage pulses applied on a piezoelectric semiconductor drift carriers gifting a gain to acoustic waves. A train of the pulses is expanded in Fourier series. The Fourier components of the series generate sound waves at the surface of the sample contacting with electrodes, because a discontinuity in the piezoelectric stress is produced at the boundary surfaces between the sample and electrodes. The sound waves excited at one of the electrodes can propagate to the other in a coherent manner, if the sound waves are amplified by drifting carriers, otherwise the sound waves are damped away. When the sound wave of frequency ω exists continuously in the sample, the frequency component of conductivity σ(ω) is negative under the condition of the acoustic traveling-wave amplification. The frequency component of electric fieldE(ω) should be, therefore, localized at a position because of σ(ω)<0. As a number of frequency components of the electric field are included in the sample as the Fourier components of applied voltage pulses, all the components of the field are localized to a high field domain as a results of summation of the Fourier components.
Nickel Ferrite Thick Films Deposited by Vacuum-Arc Discharge
Authors: Naoe Masahiko , Yamanaka Shunichi
Published: November 2005

Stoichiometric nickel ferrite films 10∼100 µ thick have been prepared by an arc evaporation in a vacuum of 10-4 torr of the material sintered with the starting mixture (Ni0)0.62(Fe2O3)0.38, and subsequent heat treatment in air at 1250∼1350°C. They have a saturation magnetization value σ
s
of 51 gauss·cm3/g agreed with the value for the bulk nickel ferrite. Their X-ray diffraction patterns and Mössbauer absorption spectra indicate that they may be composed of the polycrystalline particles with a homogeneous ion distribution and an inversed spinel structure.
However, the as-deposited film is composed of the spinel, rock-salt and nickel types of small crystalline particles and the fine amorphous particles, and has σ
s
of 17 gauss·cm3/g. Since each component ion is distributed inhomogeneously in the particles, the heat treatment below 1200°C oxidizes them in different ways. Consequently, the structure and σ
s
of the film has a complex dependence on the heating temperature.
Rotatable Anisotropy and Perpendicular Anisotropy of Annealed Electrodeposited Nickel Films
Authors: Maeda Hiroshi
Published: November 2005

The origin of the perpendicular anisotropy caused by annealing in electrodeposited nickel films was investigated at temperatures up to 400°C. The change of the perpendicular anisotropy can be explained in terms of magneto-elastic energy due to an internal planer stress induced by annealing. The origin due to non-magnetic inclusions was not found. It was found also that a rotatable anisotropy disappears by annealing at above 350°C. The disappearence of the rotatable anisotropy is thought to be due to the decrease of magnetic interactions among each grain because of the diffusion of substrate metal atoms into the film.
Discharge Current Noise in He-Ne Laser and Its Suppression
Authors: Suzuki Takeo
Published: November 2005

Amplitude noise in He-Ne laser caused by discharge fluctuation has been studied experimentally. By using tubes with various capillary diameter, capillary length. and pressure, it was observed that a discharge current noise accompanied by a moving striation of several hundreds kHz is easily generated in tubes which have long capillaries. The effect of the moving striation on the amplitude noise in laser light was analyzed, and it was found that the laser noise is mainly contributed by the discharge current noise rather than the moving striation itself.
By taking account of the condition for generation of the noise, a low noise He-Ne laser tube was constructed. The laser noise caused by the discharge current noise and the moving striation was reduced by more than 40 dB as compared with a ordinary laser.
On the Geometry of the Steady Diabatic Complex-Lamellar Gas Flows
Authors: Purushotham G. , Madhusudan Madhusudan
Published: November 2005

The non-linear character of differential equations governing fluid dynamic problems has presented considerable difficulties to find out exact possible flows. Consequently many interesting devices (inverse and semi-inverse and superposability) have been introduced. The introduction of the geometric theory of surfaces and curves in fluid flow theory is also one such device, which presents the flow possible. Extending this concept to the diabatic steady gas flows herein this paper we have studied the complex-lamellar flows in which the Beltrami surfaces are a system of parabolas in a meridian plane. Intrinsic transformation is effected to obtain analytical expression for flow parameters which is a special feature of this investigation. The complex-lamellar character of the velocity implies the total pressure to be uniform along a vortex-line. The adiabatic phenomena can be discussed as a special case of this investigation.
Work-Hardening of Iron Single Crystals between 25°C and 900°C
Authors: Takeuchi Tomoyuki
Published: November 2005

Tensile tests of iron single crystals in [100], [110], or the intermediate between these directions were carried out between 25°C and 900°C. The yield stress above 300°C was found to be determined by the work-hardening characteristics at the beginning of deformation. The work-hardening in the later stage of deformation decreased linearly with temperature. The density of cell boundaries or sub-boundaries was revealed by etch-pitting at dislocations on the (001) and (11̄0) surfaces of the [110] crystals; it decreased with increasing temperature and was nearly proportional to applied stress. It was concluded that cell boundaries play an essential role for the work-hardening of the high-temperature type deformation of iron single crystals.
Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions
Authors: Toyama Masaharu , Maeda Keiji , Sekiwa Tetsuo
Published: November 2005

Electroluminescent p-n junctions were prepared by zinc diffusion into n-GaP crystals doped with tellurium, but not intentionally doped with oxygen. Annealing at 800°C after diffusion at 1000°C improved red emission efficiency of diodes about one hundred times and green emission efficiency seven times. For annealed diodes, red efficiency monotonically decreased with diffusion time, whereas green efficiency showed a maximum between 2 and 4 hours, about four times the value for one hour diffusion. Green efficiencies obtained under optimum conditions are of the order of 10-5 at 10 A/cm2 and increases with current up to 1×10-4 for 100 A/cm2. Annealing-time and diffusion-time dependences of green and red emissions were well interpreted on the basis of junction profiles revealed from capacitance data. At 77°K, junctions showed characteristics of p-i-n structure; abrupt changes in emission spectra were observed around currents inducing negative resistance, according to a change in injection mechanism.