bluuebunny/crossref_metadata_2025 huggingface dataset:
Oridonin Could Inhibit Inflammation and T-cell Immunoglobulin and Mucin-3/Galectin-9 (TIM-3/Gal-9) Autocrine Loop in the Acute Myeloid Leukemia Cell Line (U937) as Compared to Doxorubicin
Authors: Nasri Farzad , Sadeghi Fatemeh , Behranvand Nafiseh , Samei Azam , Bolouri Mohammad Reza , Azari Tahereh , Abdollahi Elaheh , Ghazizadeh Foad , Motevalian Manijeh , Mohammad Hassan Zuhair
Published: December 2020

The T-cell immunoglobulin and mucin-3 (TIM-3)/galectin-9 (Gal-9) autocrine loop is an indispensable signaling in acute myeloid leukemia (AML) cells, which induces their self-renewal through activation of nuclear factor-kappa b (NF-kB) and β-catenin pathways. In this study, we evaluated the effects of oridonin and doxorubicin on the TIM-3/Gal-9 autocrine loop. We also evaluated oridonin anti-inflammatory and anti-cancer properties on U937 cells, as an AML cell line in comparison to doxorubicin as a common anthracycline drug for AML treatment.
Cell counting kit-8 (CCK-8) was applied to evaluate the cytotoxicity of oridonin and doxorubicin on U937 cells and also to determine the impact of galectin-9 (Gal-9) on their proliferation. The effects of oridonin and doxorubicin on Gal-9, TIM-3, and interleukin-1β (IL-1β) gene expression were determined by real-time polymerase chain reaction (RT-PCR). The Gal-9 secretion level was measured by enzyme-linked immunosorbent assay (ELISA) and activation of NF-kB pathway was assessed by western blotting.
In a dose-dependent manner, oridonin and doxorubicin were capable to eradicate U937 cells while Gal-9 expanded them. Following the treatment of U937 cells with oridonin, the expression of Gal-9, TIM-3, and IL-1β genes was down-regulated, and the Gal-9 secretion and NF-kB phosphorylation were diminished, whereas doxorubicin increased all of these factors.
Doxorubicin is a common treatment agent in AML, but it may induce inflammation and up-regulate the TIM3/Gal-9 autocrine loop, consequently can enhance the possibility of disease relapse. Meanwhile, oridonin is capable to inhibit the essential signaling pathways in AML cells and reduce the inflammation and expansion of tumor cells and postpone AML recurrence.
Evaluation of Glutathione Reductase and Glutathione Peroxidase in the Serum of Iranian Patients with Alopecia Areata: A Case-control Study
Authors: Khaki Leila , Vaezi Gholamhasan , Ayatollahi Azin , Firooz Alireza
Published: December 2020

The article's abstract is not available.
Medical students' value-rich exposures in clinical setting during the COVID-19 pandemic
Authors: Sabeghi Hakimeh , Afshar Leila , Foroutan Seyed Abbas , Yazdani Shahram
Published: December 2020

Exposing medical students to real-world situations and clinical practice experiences during their education years can help them build their professional value frameworks. The COVID-19 pandemic is one of the most challenging conditions that medical students have experienced; however, this pandemic have provided value-rich opportunities assisting in development and enhancement of their professional identity. This commentary aimed to emphasize the importance of medical students’ exposure to clinical practice during the pandemic and the potential that such encounters provide for internalizing values.
Resenha: Martins, F. J. (2020). A escola e a educação do campo. São Paulo: Pimenta Cultural.
Authors: Gonçalves Gisele de Souza
Published: December 2020

Esta resenha tem o objetivo de apresentar o livro “A escola e a educação do campo”, do autor e pesquisador professor Dr. Fernando José Martins, que organiza a obra em seis capítulos construídos a partir de seus estudos, pesquisa e experiências referentes à educação do campo e os elementos que a constituem.
Palavras-chave: Educação do Campo, Escolas do Campo, Formação.
 
Review: Martins, F. J. (2020). A escola e a educação do campo. São Paulo: Pimenta Cultural.
ABSTRACT. This review has the objective of presenting the book “The school and the rural education”, by the author and researcher professor Dr. Fernando José Martins, which organizes the work in six chapters built from his studies, research and related experiences to rural education and the elements that constitute it.
Keywords: Rural Education, Countryside Schools, Professional Qualification/Continuing Education.
 
Revisión: Martins, F. J. (2020). A escola e a educação do campo. São Paulo: Pimenta Cultural.
RESUMEN. Esta revisión tiene como objetivo presentar el libro “La escuela y la educación del campo”, del autor e investigador profesor Dr. Fernando José Martins, que organiza el trabajo en seis capítulos construidos a partir de sus estudios, investigaciones y experiencias afines de la educación del campo y los elementos que la constituyen.
Palabras clave: Educación del Campo, Escuelas del Campo, Formación.
Violent Victimization Among Lesbian, Gay, and Bisexual Populations in the United States: Findings From the National Crime Victimization Survey, 2017–2018
Authors: Bender Annah K. , Lauritsen Janet L.
Published: December 2020

Objectives. To estimate US nonlethal violent victimization rates for lesbian, gay, and bisexual (LGB) males and females aged 16 years and older and to compare disparities among LGB and straight males and females, controlling for other correlates of victimization.

Methods. We used data from the 2017 and 2018 National Crime Victimization Survey (NCVS) to provide nationally representative rates of various forms of violent victimization for self-identified LGB and straight persons. Multivariable models assessed the risk for violence associated with LGB status.

Results. Total violence rates were 2 to 9 times higher among LGB persons compared with heterosexuals. For some forms of violence (e.g., rape and sexual assault, violence with serious injuries, and multiple offender violence) there were notably high disparities between bisexuals and heterosexuals. With adjustment for covariates, LGB orientation was associated with odds ratios nearly 2 to 4 times those of heterosexuals.

Conclusions. This is one of the first known uses of NCVS data to estimate LGB victimization, revealing substantially higher rates of violence directed at LGB individuals.

Public Health Implications. Sexual orientation and gender identity questions in federal surveys such as the NCVS enable monitoring of violent victimization rates and should continue. Collecting these data can help researchers understand victimization risk and guide appropriate resources toward victim services, especially important given the high violent crime levels experienced by LGB individuals.
Noncoding RNAs and Colorectal Cancer: A General Overview
Authors: Sarraf Jonathan Souza , Puty Taynah Cascaes , da Silva Emanuely Magno , Allen Thais Suellen Ramos , Sarraf Yasmim Souza , de Carvalho Luis Eduardo Werneck , Adami Fernando , de Oliveira Edivaldo Herculano Correa
Published: December 2020

Colorectal cancer (CRC) is the second most prevalent cancer in the world in which nonmelanoma
skin cases are not considered. Different epigenetic mechanisms play a role in the development
of cancer. Noncoding RNAs (ncRNAs) are RNA molecules transcribed from noncoding regions
of the genome. These are divided into sncRNAs (small noncoding RNAs: <200 nucleotides -
including miRNAs [microRNAs], siRNAs [small interfering RNAs], piRNAs [piwi-interacting
RNAs], snoRNAs [small nucleolar RNAs]) and lncRNAs (long noncoding RNAs: >200 nucleotides
- includingcircular RNAs [circRNAs]). NcRNAs can act as oncogenes or as tumor suppressor
genes in CRC and are potential biomarkers of diagnosis, with possible clinical implications.
This article aims to conduct a general review of all types of non-coding RNAs and their influence
in colorectal cancer, focus on biomarkers of CRC and their possible applications in clinical
practice, as well as review their biogenesis and functions. Furthermore, we seek to summarize possible
databases available for new searches and studies that require sequence annotation, comparison
sequences and target prediction for ncRNAs with the hope of gathering information that can
aid in the process of understanding and translating the use of ncRNAs into clinical practice.
Needs and Obstacles of Using the Internet in Language Teaching from Instructors’ Perspective; the case of the department of English at Imam Mohammad Ibn Saud Islamic University
Authors: Mohamamd Freihat Nasser
Published: December 2020

This study investigated the instructors’ perceived obstacles and needs in using the Internet for teaching English. Eighty-one instructors in the Department of English at Imam Mohammad ibn Saud Islamic University (IMSIU) participated in the study. This study provides data related to the teachers' perceptions concerning Internet use, areas and barriers in language teaching. The study aimed to answer two research questions. Namely, what are the perceived obstacles to implementing Internet-based English as a foreign language teaching (EFL) teaching from the viewpoint of English Department instructors at IMSIU? And what are IMSIU English Department’s instructors’ perceived needs for training in using the Internet for language teaching? A survey and a semi-structured interview were used to collect the data. The survey involved three sections; the first section enquired about whether participants’ need training on using the Internet in language teaching, the second section investigated the areas of potential training, and the last section investigated participants’ barriers in incorporating the Internet in language instruction. The interviews involved three questions for further understanding. The findings showed that the perceived obstacles include cheating in online exams, lack of knowledge in using some applications, restricted time of some applications, and making online exams. The instructors demonstrated their eagerness to training. They also perceived presentation software, creating online exams, creating teaching materials, Videoconferencing, and teaching techniques, online classroom management, managing data sources, online assessment and evaluation, and basic knowledge of using technology as very necessary. The paper recommends designing a training course that considers the obstacles and needs suggested by the EFL instructors.
Package Related Failure Mechanisms in Plastic BGA Packages Used for ASIC Devices
Authors: Parekh K. , Milburn R. , Georgia K.
Published: December 2020

This paper describes various package related failure mechanisms observed in the plastic surface mount Ball Grid Array (BGA) package. Two types of plastic BGA packages commonly known as 225 OMPAC™ (Over Molded Pad Array Carrier) and 225 GTPAC (Glob Top Pad Array Carrier) are covered in this paper. The GTPAC is not offered as a production package, but it is used for commercial prototypes and evaluations. The failure analysis results discussed in this paper are primarily of the devices which failed at different times during various reliability and qualification testing over a period of two years. The failure analysis results of field returns (about 10% of al the devices analyzed) from customers for the same period are also included in this study. Of all the devices in the BGA packages which were failure analyzed, about 50% lailed due to package related problems. All the package related failures fall into two major categories of failure mechanisms, package delamination and cracked open copper traces on the printed circuit board (PCB). The delamination resulted in a variety of physical damage such as lifted ball bonds at the die pads, fractured bond wires in the span as well as at the heel of the crescent bonds on the PCB substrate, and cracking of the encapsulant. The copper traces cracked from two types of stresses, mechanical and thermal. In addition, some of the techniques used for the failure analysis are briefly discussed in this paper.
A Novel Approach to Identifying and Validating Electrical Leakage in Printed Circuit Boards Through Magnetic Current Imaging
Authors: Hillman Craig
Published: December 2020

Superconducting Quantium Interferance Device (SQUID) microscopy uses detection of magnetic fields to image current paths within electronic devices and has been successful in non-destructively identifying the location of low leakage currents, even when the failure site was between a power and ground plane. This article presents a case study in which the customer was experiencing ignition of a 20-layer printed circuit board after approximately 1000 to 4000 operating hours in an indoor-controlled environment. High currents on the board resulted in extensive damage, effectively preventing initial identification of the failure site, failure mechanism, or root-cause. Based on a review of potential failure mechanisms, measurement of relevant parameters, and the results of SQUID microscopy, the process of electrochemical migration around or through the particles was determined to be the most likely root-cause of electrical shorting between power and ground.
Diagnostic Fault Simulation for the Failure Analyst
Authors: Bodoh Dan , Blakely Anthony , Garyet Terry
Published: December 2020

Since failure analysis (FA) tools originated in the design-for-test (DFT) realm, most have abstractions that reflect a designer's viewpoint. These abstractions prevent easy application of diagnosis results in the physical world of the FA lab. This article presents a fault diagnosis system, DFS/FA, which bridges the DFT and FA worlds. First, it describes the motivation for building DFS/FA and how it is an improvement over off-the-shelf tools and explains the DFS/FA building blocks on which the diagnosis tool depends. The article then discusses the diagnosis algorithm in detail and provides an overview of some of the supporting tools that make DFS/FA a complete solution for FA. It also presents a FA example where DFS/FA has been applied. The example demonstrates how the consideration of physical proximity improves the accuracy without sacrificing precision.
Diagnosing DACS (Defects That Affect Scan Chain and System Logic)
Authors: Huang Yu , Cheng Wu-Tung , Tsai Kun-Han , Crowell Greg , Mcmahon Chris
Published: December 2020

In this paper, DACS stands for Defects that Affect Chain and System, which could be any type of silicon defects caused by an unintentional interaction between a scan chain signal and a system logic signal. The device could fail scan chain testing or show up as a latent failure in the customer’s system. A novel diagnosis methodology is proposed to locate both ends of a DACS. The proposed algorithm can be generally applied to any type of DACS. Experimental results on industrial chips demonstrate the effectiveness of the proposed method.
Application of LADA for Post-Silicon Test Content and Diagnostic Tool Validation
Authors: Kong Chia Ling , Castro Edwin P.
Published: December 2020

Embedded cache size has dramatically increased with the advent of Intel Hyper-Threading and Multi-Core Technology, making many of the existing cache test validation method less and less practical, if not obsolete. As a result, the effort to sustain and improve array test quality, which is ever so critical to achieve DPM goals, is becoming a formidable challenge. In this paper, we present a test content validation procedure through novel application of Laser Assisted Device Alteration (LADA), i.e. soft fault injection in state elements, which had proven itself in Itanium® 2 array test quality improvement. While the procedure was originally targeting cache test content, the underlying concept has been successfully deployed to expedite scan test content and fault isolation tool validation.
Surface Effect on SEM Voltage Contrast and Dopant Contrast
Authors: Li-Lung Lai , Gao Huimin , Xiao Hong
Published: December 2020

The Voltage Contrast (VC) [1-3] and Dopant Contrast [4-7] in Scanning Electron Microscopy (SEM) [8] have been widely used in the Silicon (Si) semiconductor manufacturing field to localize the failure site from plane-view and inspect the doping profile along cross-section with spatial resolution in the nanometer (nm) range. In this article, we demonstrate how the surface effect, such as topography or material variation, impacts the conventional prediction for the voltage and dopant contrast in the SEM images. The mechanisms and applications for the SRAM and real products are described.
Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based Photovoltaics
Authors: Kittler Martin , Arguirov Tzanimir , Schmid Reiner , Seifert Winfried , Mchedlidze Teimuraz
Published: December 2020

Crystalline silicon used for fabrication of solar cells, such as multicrystalline silicon (mc-Si), contains a high density of extended crystal defects. Since mc-Si wafers exhibit an inhomogeneous defect distribution, there is a need to combine the spectral capabilities with the ability of spatially resolving the defect areas. This paper reports application of luminescence and electron-beam-induced current (EBIC) techniques for characterization of defects in solar Si. The first part introduces luminescence features of defective Si and discusses application examples. The second part starts with explanation of the EBIC technique, including details about the temperature dependence of the EBIC defect contrast c(T). Then, application examples of the c(T) behavior and the analysis of the "interaction" of grain boundaries with p-n junctions are discussed. The paper demonstrates the potential of luminescence for nondestructive characterization of Si wafers and solar cells in terms of in-line defect detection and process control.
Developing a Chemistry-Assisted Focused Ion Beam Process for ‘On-Demand’ Solid Immersion Lenses in Silicon
Authors: Scholz P. , Kerst U. , Boit C. , Kujawa T. , Lundquist T.
Published: December 2020

Focused Ion Beam has proven to create refractive solid immersion lenses in silicon that can significantly improve the resolution of optical backside analysis tools. The SIL performance in our previous works has been limited though, mostly due to a pure sputtering process. This problem is addressed by developing a chemistry-assisted FIB process, offering the ability to create larger SIL shapes. A 50 µm wide SIL shape is presented with a lens area two and a half times larger than the largest FIB SIL we created so far. The resulting wider opening angle has the potential of better spatial resolution and higher photon collection efficiency. 370 nm wide image features are resolved using the FIB created SIL expanding the resolution capabilities of the used laser scanning microscope considerably.
Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy
Authors: Chung Jayhoon , Lian Guoda , Rabenberg Lew
Published: December 2020

Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.
Scanning Capacitance Microscopy: A Valuable Tool to Diagnose Current Paths in 3D-Capacitors Process
Authors: Delaroque Thomas , Danilo Karine , Voiron Frédéric , Bunel Catherine , Domengès Bernadette , Laflutte Marc , Dalmolin Renzo
Published: December 2020

Some process abnormalities can be very difficult to detect with conventional FA techniques. Scanning Capacitance Microscopy (SCM) has been shown to be a reliable and versatile tool and the case analysis presented in this work illustrates its significant role. In this paper, a 3D-PICS capacitor used as an element of a band pass filter of a cardiac detection chain was studied. As the electrical and physical diode current signature of this device did not satisfy the targeted needs, a complete failure analysis flow was performed, including OBIRCH and Scanning Capacitance Microscopy characterizations. SCM accumulated measurements allowed extracting and validating a trend according to electrical performance variations from the center to the edge of the wafer. As a result, the root cause of the level of this diode reverse current was identified and corrective actions could be introduced in the process to meet the application requirements.
Non Destructive Failure Analysis of 3D Electronic Packages Using Both Electro Optical Terahertz Pulse Reflectometry and 3D X-Ray Computed Tomography
Authors: Li Yan , Cai Yongming , Pacheco Mario , Dias Rajen C. , Goyal Deepak
Published: December 2020

The 3D package configuration presents challenges to conventional Fault Isolation (FI) and Failure Analysis (FA) methods. This paper illustrates that with correct Electro Optical Terahertz Pulse Reflectometry (EOTPR) data processing, interpretation and additional reference spectra, the combination of EOTPR to isolate the open/high resistance failure location and 3D X-ray Computed Tomography (CT) to image the failure is very effective for System in a Package (SIP) FI/FA.
Study of Static Noise Margin, Cell Stability and Influence of Electron Beam on Sub-30nm SRAM Using SEM-Based Nanoprobing with 8 Nanoprobes
Authors: Ng T.H. , Dawood M.K. , Tan P.K. , Tan H. , Oh C.K. , Lam J. C. , Mai Z.H.
Published: December 2020

SEM-based nanoprobing has proven vital in identifying nonvisual failures through electrical characterization in current FA metrology for fault identification. With eight probes used concurrently, the system could have the ability to obtain other important information such as cell stability as well as the static noise margin (SNM). In this work, the cell stability and SNM at different biasing conditions at low electron beam energy (500eV) of a sub-30 nm technology node SRAM device have been characterized. Bit cell stability, static noise margin test as well as leakage study between two adjacent floating wordines were performed on the SRAM samples. Results show that no significant degradation has been introduced during the data acquisition and imaging processes in the SEM. Good resolution imaging with passive voltage contrast can be achieved with low electron voltage (500eV) throughout the nanoprobing process.
Advanced Methods and Software for Enhancing Analytical Tools Capabilities during Chip Diagnostic and Characterization
Authors: Stellari Franco , Song Peilin
Published: December 2020

In this paper, we present a comprehensive overview of several advanced methods and software solutions that we have developed during the years in support of chip diagnostic and characterization in our lab. These techniques apply to the analytical tools in our lab, such as time-integrated and time-resolved emission microscopes, and are devised to help improve productivity and ease of use. In particular we discuss emission-based auto-focusing for detecting very faint signals, processing large sets of images for high-resolution mapping of very large field of views, careful registration of emission images to circuit layout shapes, and advanced processing of the data for extracting the valuable underlying information. In the past, these techniques have been extensively used in support of many diagnostic and characterization applications, and they have been effective enablers for the development of innovative methods and tools.
Failure Analysis Methodology on Systematic Defect in N+ poly/NWELL Varactor in RF Analog_PLL due to Implanter Charging Issue
Authors: Boon Ang Ghim , Changqing Chen , Peng Ng Hui , Ping Neo Soh , G Magdeliza , Jony Indahwan , Tat Lee Mern
Published: December 2020

In this paper, a zero yield case relating to a systematic defect in N+ poly/N-well varactor (voltage controlled capacitor) on the RF analog circuitry will be studied. The systematic problem solving process based on the application of a variety of FA techniques such as TIVA, AFP current Imaging and nano-probing, manual layout path tracing, FIB circuit edit, selective etching together with Fab investigation is used to understand the root cause as well as failure mechanism proposed. This process is particularly critical for a foundry company with restricted access to data on test condition setup to duplicate the exact failure as well as no layout tracing available at time of analysis. The systematic defect was due to gate oxide breakdown as a result of implanter charging. It serves as a good reference to other wafer Fabs encountering such an issue.
Fabrication and Characterization of Helium and Neon Ion Deposited Platinum Wires for Circuit Edit Applications
Authors: Thompson William , Stern Lewis , Wu Huimeng , Ferranti Dave , Xia Deying , Khanom Fouzia , Rack Philip D. , Gonzales Carlos , Phaneuf Michael W.
Published: December 2020

Sub-nanometer focused inert gas ions derived from a Gas Field Ion Source (GFIS) contain properties that can improve the dimensional and conductivity characteristics of ion beam deposited platinum circuit edit wiring. The following paper, presents ion interaction simulations that help provide insight into the factors which determine the ultimate wire width, resistivity, and metal deposition rates. An experimental result that has aided in the understanding of the primary wire width limiting mechanism is also presented. Finally, a description of the ion beam and precursor properties used for the platinum deposition is provided, a long with a discussion of the wire resistivity measurement technique and challenges. To conclude, the prospects for GFIS ion induced dielectric and metal deposition for circuit edit and nanofabrication applications are discussed.
22 nm BEOL TDDB Defect Localization and Root Cause Analysis
Authors: Kane Terence , Wang Yun Yu
Published: December 2020

For 22nm and below technologies which involve as many as fifteen back end of the line (BEOL) metallization levels, these leading edge technology nodes pose real challenges in defect localization and root cause analysis. Due to scaling, the reduction in copper land cross section area is accompanied by increased current density and electromigration failure rates. Time to Dielectric Defect Breakdown (TDDB) shows an increase in fallout with successive technology node from 32nm and below. Similarly, the reduced dielectric thickness increases the electric field stress prompting the necessity for porous, ultra low k dielectric (ULK) films. Defect localization is difficult due to the complexity of these multiple metal layers along with the presence of the porous, low k dielectric films which exhibit shrinkage or void formation when exposed to an e-beam/FIB ion beam > 1keV. Due to the porosity of these ULK dielectric films, they are especially susceptible to gallium ion implantation. It has been reported elsewhere that suppressing copper diffusion at the copper land/cap interface can be achieved by depositing a thin layer of CoWP and doping the copper seed layer with manganese [15, 16, 17]. However, a method for analytically confirming that these approaches for suppressing the copper diffusion do not affect TDDB performance/electromigration behavior must be demonstrated.
The Application of Magnetic Force Microscopy for Detection of Subsurface Anomalies in Semiconductor Device Wiring Levels
Authors: Kaszuba Phil , Alwine Frank , Moszkowicz Leon , Wells Randy
Published: December 2020

Subsurface wiring level anomalies in VLSI semiconductor devices are extremely difficult, if not impossible to analyze without de-processing the device to expose suspect wiring. Magnetic Force Microscopy (MFM) is a scanning probe technique that requires minimal sample preparation and has the capability to sense magnetic fields in proximity to thin film conductors with high lateral resolution [1]. In this study, multiple VLSI device conductors were intentionally modified and then the magnetic field around the energized conductors was analyzed using MFM. An overview of the technique and results of the magnetic field analysis are discussed.
Scan-Shift Debug Using LVI Phase Mapping
Authors: Ng Yin (Roy) S. , Marks Howard , Nemirov Christopher , Tsao Chun-Cheng , Vickers Jim
Published: December 2020

Laser Voltage Imaging (LVI) has become a well-established method for isolating scan-shift (i.e., scan chain integrity) tests failures [1, 2]. When LVI is coupled with time-domain information acquired using Continuous-Wave Laser Voltage Probing (CW-LVP) [3], the Physical Failure Analysis (PFA) success rate exceeds 90% for all types of failing conditions, from hard stuck-at fails to soft transition fails. This combination of Electrical Failure Analysis (EFA) techniques is effective because of its ability to pre-isolate the defect to a small enough area for successful PFA. While high PFA success rates are proven, there remains the issue of throughput: CW-LVP can be time consuming, and techniques that minimize the need for it are important. This paper introduces a novel LVI methodology that incorporates phase information [4] and reduces the need for CW-LVP for certain types of failures. Case studies will be presented.
Routine Device-Level Atom Probe Analysis
Authors: Lawrence D.F. , Ulfig R.M. , Larson D.J. , Olson D.P. , Reinhard D.A. , Martin I.Y. , Strennen S. , Clifton P.H.
Published: December 2020

Continuing advances in Atom Probe Tomography and Focused Ion Beam Scanning Electron Microscope technologies along with the development of new specimen preparation approaches have resulted in reliable methods for acquiring 3D subnanometer compositional data from device structures. The routine procedure is demonstrated here by the analysis of the silicon-germanium source-drain region of a field effect transistor from a de-packaged off-the-shelf 28 nm design rule graphics chip. The center of the silicon-germanium sourcedrain region was found to have approximately 180 ppm of boron and the silicide contact was found to contain both titanium and platinum.
Advances in FIB-SEM Analysis of TSV and Solder Bumps—Approaching Higher Precision, Throughput, and Comprehensiveness
Authors: Hrnčíř Tomáš , Dluhoš Jiří , Hladík Lukáš , Moyal Efrat , Teshima Janet , Kopeček Jaromír
Published: December 2020

Cross sections of large Through Silicon Vias (TSV) and solder bumps are often prepared using the Focused Ion Beam (FIB). The high current Xe plasma ion source allows fast and precise target preparation of TSV with small diameter. Solder bumps can be accessed due to the high milling rate too. However, the high current milling by plasma FIB causes the worsening of the milled surface quality. An optimized FIB scanning strategy accompanied with the novel rocking stage for the sample tilting during the milling has been developed for the plasma FIB. Whole milling process is observed by the Scanning Electron Microscopy (SEM). Time to prepare a cross section is accelerated and the excellent quality is suitable for subsequent failure analysis. Also important is proper sample cleaving before FIB milling. Using an accurate method to cleave the sample prior to FIB preparation further reduces the overall sample preparation time. The high quality cross sections prepared using this new method are ready not only for SEM but also for EDX and EBSD analysis, either 2D or 3D, when combined with FIB slicing. Broadening the analysis to these techniques increases the obtainable information, allowing the arrangement of materials and their crystalline structure to be studied in a detail.
Integrated ESD Robustness through Device Analysis of Ultra-Small Low Voltage Power MOSFETs
Authors: Kearney Ian , Sung Hank
Published: December 2020

Low voltage power MOSFETs often integrate voltage spike protection and gate oxide ESD protection. The basic concept of complete-static protection for the power MOSFETs is the prevention of static build-up where possible and the quick, reliable removal of existing charges. The power MOSFET gate is equivalent to a low voltage low leakage capacitor. The capacitor plates are formed primarily by the silicon gate and source metallization. The capacitor dielectric is the silicon oxide gate insulation. Smaller devices have less capacitance and require less charge per volt and are therefore more susceptible to ESD than larger MOSFETs. A FemtoFETTM is an ultra-small, low on-resistance MOSFET transistor for space-constrained handheld applications, such as smartphones and tablets. An ESD event, for example, between a fingertip and the communication-port connectors of a cell phone or tablet may cause permanent system damage. Through electrical characterization and global isolation by active photon emission, the authors identify and distinguish ESD failures. Thermographic analysis provided additional insight enabling further separation of ESD failmodes. This paper emphasizes the role of failure analysis in new product development from the create phase through to product ramp. Coupled with device electrical simulation, the analysis observations led to further design enhancement.
Application of Automated FIB for TEM Sample Preparation in Semiconductor Failure Analysis
Authors: Zhu Jie , Seah Soo Sien , Tee Irene , Liu Bing Hai , Er Eddie , Zhao Si Ping , Lam Jeffrey , Najarian Mark , Brogden Valerie
Published: December 2020

In this paper, we describe automated FIB for TEM sample preparation using iFast software on a Helios 450HP dual-beam system. A robust iFast automation recipe needs to consider as many variables as possible in order to ensure consistent sample quality and high success rate. Variations mainly come from samples of different materials, structures, surface patterns, surface topography and surface charging. The recipe also needs to be user-friendly and provide high flexibility by allowing users to choose preferable working parameters for specific types of samples, such as: grounding, protective layer coating, milling steps, and final TEM lamella thickness/width. In addition to the iFast recipe, other practical factors affecting automation success rate are also discussed and highlighted.
Quantitative Analysis of Interference Noise by Capacitive Coupling Effects in DRAM
Authors: Seo Seoungbin , Lee Hyongyong , Hong Heeil , Hwang Hongsun , Rhee Sangjae , Cho Kangyong , Jin Gyoyoung
Published: December 2020

As microelectronic feature sizes are scaled down, the soft failure rate has increased. Additionally the characteristics and distribution of Dynamic Random Access Memory (DRAM) data retention time and write recovery time (tWR) are getting worse. As a result of this failure analysis, we revealed that the major contributors are caused by the interference noise, resultant from decreasing separation distance between nodes and the signal line noise increasing. This paper gives a detailed analysis of the problem caused by the coupling effects. We investigated the cause of soft noise by simulation and proposed calculation of sensing margin change by interference noise. Finally, we expect that a design improvement to reduce the magnitude of interference noise will result in overall improvement when implemented in the test vehicle.
Novel FIB Use for Failure Analysis of MEMS Gyroscopes
Authors: Wang Nathan , Shah Saunil , Garcia Camille , Pasating Vicente , Perreault George
Published: December 2020

MEMS samples, with their relatively large size and weight, present a unique challenge to the failure analyst as they also included thin films and microstructures used in conventional integrated circuits. This paper describes how to accommodate the large MEMS structures without skimping on the microanalyses needed to get to the root cause. Investigations of tuning folk gyroscopes were used to demonstrate these new techniques.
Fault Isolation of DQ Failures in 14 nm SRAM Using Laser Voltage Imaging and Probing
Authors: Serrels K.A. , Kalarikkal A. , Jakati A.M. , Dabney G.
Published: December 2020

Through custom test pattern generation and SRAM design analysis, we present the first demonstration of Laser Voltage Imaging (LVI) and Probing (LVP) for the successful fault isolation and physical analysis of DQ failures within a 14nm SRAM macro. These findings revealed the fail site to reside within the I/O circuitry of the associated failing pin, a previously overlooked location as common block failures are typically associated with physical anomalies within the SRAM periphery.
Thermal Exposure Effects of Backside Thinned Flip-Chip Device on Visible Light Probing
Authors: Li Jane , Halteh Elia , Elliott Jonathon , Marks Howard Lee , Richardson Chris
Published: December 2020

We report the results of our studies on thermally induced surface topography changes in ultra-thinned silicon flip-chip packaged devices. Previous results showed that over polishing can result in bump topography on the ultra-thinned Si backside. The topographic bumps were found to form over the solder bump locations on the die. Our latest results show that heating exacerbates the topological variation, possibly due to underfill shrinkage caused by additional curing during heating, or plastic deformation caused by underfill and bump CTE mismatch. Our findings are relevant for Visible Light Probing because the induced topography can prevent Solid Immersion Lenses from making the intimate contact necessary for optimum performance.
Nanoscale 3D X-ray Microscopy for High Density Multi-Chip Packaging FA
Authors: Schmidt Christian , Hartfield Cheryl , Kelly Stephen T. , England Luke , Kannan Sukeshwar
Published: December 2020

An effective method is presented to locate certain failure sites on exposed junction of insulated-gate bipolar transistor (IGBT) devices. High emitter to collector leakage current, hereafter called ICESR, is an IGBT failure mode. The leakage current is typically related to the exposed P+/N+ junction on the die sidewall. Solder die attach residue bridging or silicon damage at this exposed P+/N+ junction are common causes of ICESR leakage. The die attach residue can be dislodged during decapsulation resulting in loss of failure information. A failure analysis flow will be described to precisely locate the ICESR leakage site without disturbing any possible die attach residue.
Die-Level Scanning Capacitance Microscopy Fault Isolation on SOI Fin-FET Devices for Advanced Semiconductor Nodes
Authors: Sheridan Lucile C. Teague , Schaeffer Tanya , Wei Yuting , Kodali Satish , Oh Chong Khiam
Published: December 2020

It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide localized, die-level fault isolation over an area of several microns much faster than conventional nanoprobing methods. SCM, has advantages over CAFM in that it is not limited to bulk technologies and can be utilized for fault isolation on SOI-based technologies. Herein, we present a case-study of SCM die-level fault isolation on SOI-based FinFET technology at the 14nm node.
Contamination Troubleshooting Approach from Problem to Solution
Authors: Chia Victor K. F. , Gotts Hugh E. , Li Fuhe , Camenzind Mark
Published: December 2020

Semiconductor devices are sensitive to contamination that can cause product defects and product rejects. There are many possible types and sources of contamination. Root cause resolution of the contamination source can improve yield. The purpose of contamination troubleshooting is to identify and eliminate major yield limiters. This requires the use of a variety of analytical techniques[1]. Most important, it requires an understanding of the principle of contamination troubleshooting and general knowledge of analytical tests. This paper describes a contamination troubleshooting approach with case studies as examples of its application.
Loop Transformation Algorithm for Test Vector Accessing at High Speed
Authors: Dahlberg Bjorn , Versen Martin
Published: December 2020

Looping on test vectors is a widespread requirement in failure analysis of semiconductor devices. The start of the loop and the number of vectors in the loop can be of critical importance. Present-day vector memory architecture tends to impose restrictions on both due to test speed requirements. A new Vector Loop Transformation algorithm is introduced to remedy the tester constraints.
Submicron Thinning of finFET Devices with High Power Density Observed in 10/7nm Process Nodes Using High Aspect Ratio Trenches
Authors: Bakken Nathan , Vlasyuk Vladimir , Beal Michael , Artishuk Ilya , Chivas Robert , DiBattista Mike , Silverman Scott
Published: December 2020

Infrared optical probing techniques that have significant applications to and continued development for silicon physical debug have existed for decades. More recently, resolution enhancement achieved by improving numerical aperture, etc. have reached fundamental limits and the ability for resolution to match node scaling with radiation transparent to silicon (photon energy < silicon bandgap) becomes diffraction limited for some 10nm and many future process nodes. Decreasing the wavelength used for imaging and signal acquisition can improve resolution; however, it is well documented that absorption increases sharply for photons with energy greater than the bandgap of the bulk substrate material. Significant reduction in the thickness of the backside substrate material can be performed to achieve acceptable transmission through the absorbing substrate, but the requirement for very thin sample preparation significantly modifies the thermal system surrounding active circuitry. Here, high aspect ratio trenches are shown to offer a unique method to take advantage of thick silicon (> 100µm) for lateral heat dissipation as well as thin silicon (< 2µm) for minimally absorbing optical path in close proximity to enable case-by-case preparation methods for postsilicon labs faced with visible light resolution requirements on high power density circuits.
What Is the Assembly Pathway of a Conjugated Polymer From Solution to Thin Films?
Authors: Xu Zhuang , Park Kyung Sun , Diao Ying
Published: December 2020

The hierarchical assembly of conjugated polymers has gained much attention due to its critical role in determining optical/electrical/mechanical properties. The hierarchical morphology encompasses molecular-scale intramolecular conformation (torsion angle, chain folds) and intermolecular ordering (π–π stacking), mesoscale domain size, orientation and connectivity, and macroscale alignment and (para)crystallinity. Such complex morphology in the solid state is fully determined by the polymer assembly pathway in the solution state, which, in turn, is sensitively modulated by molecular structure and processing conditions. However, molecular pictures of polymer assembly pathways remain elusive due to the lack of detailed structural characterizations in the solution state and the lack of understanding on how various factors impact the assembly pathways. In this mini-review, we present possible assembly pathways of conjugated polymers and their characteristics across length scales. Recent advances in understanding and controlling of assembly pathways are highlighted. We also discuss the current gap in our knowledge of assembly pathways, with future perspectives on research needed on this topic.
Cardiovascular Complications of Prostate Cancer Treatment
Authors: Wilk Michał , Waśko-Grabowska Anna , Szmit Sebastian
Published: December 2020

Treatment of prostate cancer (PC) is a rapidly evolving field of pharmacology research. In recent years, numerous novel therapeutics that improve survival and ameliorate disease control have been approved. Currently, the systemic treatment for prostate neoplasm consists of hormonal therapy, chemotherapy, immunotherapy, radiopharmaceuticals, targeted therapy, and supportive agents (e.g., related to bone health). Unfortunately, many of them carry a risk of cardiovascular complications, which occasionally pose a higher mortality threat than cancer itself. This article provides a unique and comprehensive overview of the prevalence and possible mechanisms of cardiovascular toxicities of all PC therapies, including state-of-the-art antineoplastic agents. Additionally, this article summarizes available recommendations regarding screening and prevention of the most common cardiac complications among patients with advanced cancer disease.
Mitochondrial Stress Response Gene Clpp Is Not Required for Granulosa Cell Function
Authors: Esencan Ecem , Cozzolino Mauro , Imamoglu Gizem , Seli Emre
Published: December 2020

Mitochondrial unfolded protein response (UPRmt) is a highly conserved mechanism, which is activated upon cellular or metabolic stress and aims to help cells maintain homeostasis. CLPP (caseinolytic peptidase P) plays a crucial factor for UPRmt; it promotes the degradation of unfolded mitochondrial proteins. Global germline deletion of Clpp in mice results in female infertility and accelerated follicular depletion. Here, we asked whether CLPP is necessary for granulosa/cumulus cell function. Clppflox/flox mice were generated and crossbred with Cyp19a1-Cre mice to generate mice with granulosa/cumulus cell-specific Clpp deletion (Clpp−/−). Mature (8-week-old) Clpp−/− female mice (8-week-old) were compared to same age wild type (WT) mice. We found that mature Clpp−/− female mice were fertile and produced a similar number of pups per litter compared to WT. Folliculogenesis was not affected by the loss of CLPP in granulosa/cumulus cells as Clpp−/− and WT mice had a similar number of primordial, primary, secondary, early antral, and antral follicles. The number of germinal vesicles (GV) and MII oocytes collected from Clpp−/− and WT female mice were also similar. Our findings demonstrate that fertility in female mice is not affected by granulosa/cumulus cell-specific UPRmt disruption through CLPP deletion.
L-Carnitine in Drosophila: A Review
Authors: Carillo Maria Rosaria , Bertapelle Carla , Scialò Filippo , Siervo Mario , Spagnuolo Gianrico , Simeone Michele , Peluso Gianfranco , Digilio Filomena Anna
Published: December 2020

L-Carnitine is an amino acid derivative that plays a key role in the metabolism of fatty acids, including the shuttling of long-chain fatty acyl CoA to fuel mitochondrial β-oxidation. In addition, L-carnitine reduces oxidative damage and plays an essential role in the maintenance of cellular energy homeostasis. L-carnitine also plays an essential role in the control of cerebral functions, and the aberrant regulation of genes involved in carnitine biosynthesis and mitochondrial carnitine transport in Drosophila models has been linked to neurodegeneration. Drosophila models of neurodegenerative diseases provide a powerful platform to both unravel the molecular pathways that contribute to neurodegeneration and identify potential therapeutic targets. Drosophila can biosynthesize L-carnitine, and its carnitine transport system is similar to the human transport system; moreover, evidence from a defective Drosophila mutant for one of the carnitine shuttle genes supports the hypothesis of the occurrence of β-oxidation in glial cells. Hence, Drosophila models could advance the understanding of the links between L-carnitine and the development of neurodegenerative disorders. This review summarizes the current knowledge on L-carnitine in Drosophila and discusses the role of the L-carnitine pathway in fly models of neurodegeneration.