Features of the two-stage formation of macroporous and mesoporous silicon structuresя
Authors: Lenshin Alexander S. , Lukin Anatoly N. , Peshkov Yaroslav A. , Kannykin Sergey V. , Agapov Boris L. , Seredin Pavel V. , Domashevskaya Evelina P. 
Published: March 2021

The aim of this work was the formation of multilayer structures of macroporous silicon and the study of their structural, morphological, and optical properties in comparison with the properties of multilayer structures of mesoporous silicon. The paper presents the results of the development of techniques for the formation of multilayer structures of porous silicon por-Si by stepwise change in the current with two-stage modes of electrochemical etching.The data on the morphology, composition, and porosity of macroporous and mesoporous silicon samples were obtained using scanning electron microscopy, IR spectroscopy, and X-ray reflectivity. It was shown that with the two-stage growth of porous silicon layers, the depth of the boundary between the layers of the structure was determined by the primary mode of electrochemical etching, while the total layer thickness increased with an increase in the current density of electrochemical etching.A comparative analysis of the relative intensity and fine structure of vibrational modes of IR spectra indicated a significantly more developed specific pore surface and greater sorption capacity of mesoporous silicon as compared to macroporous silicon.

 

 

REFERENCES

1. Pacholski C. Photonic crystal sensors based on porous silicon. Sensors. 2013;13(4): 4694–4713. https://doi.org/10.3390/s130404694 2. Harraz F. A. Porous silicon chemical sensors and biosensors: A review. Sensors and Actuators B: Chemical. 2014;202: 897–912. https://doi.org/10.1016/j.snb.2014.06.0483. Qian M., Bao X. Q., Wang L. W., Lu X., Shao J., Chen X. S. Structural tailoring of multilayer porous silicon for photonic crystal application. Journal of Crystal Growth. 2006;292(2): 347–350. https://doi.org/10.1016/j.jcrysgro.2006.04.0334. Len’shin A. S., Kashkarov V. M., Turishchev S. Yu., Smirnov M. S., Domashevskaya E. P. Effect of natural aging on photoluminescence of porous silicon. Technical Physics Letters. 2011;37(9): 789–792. https://doi.org/10.1134/S10637850110901245. Kheifets L. I., Neimark A. B. Multiphase processes in porous media. Moscow: Khimiya Publ.; 1982. 320 p. (In Russ.)6. Canham L. Handbook of porous silicon. Switzerland: Springer International Publishing; 2014. 733 p.7. Zimin S. P. Porous silicon – material with new properties. Soros Educational Journal. 2004;8(1): 101–107. Available at: http://window.edu.ru/resource/217/21217/files/0401_101.pdf (In Russ., abstract in Eng.) 8. Seredin P. V., Lenshin A. S., Goloshchapov D. L., Lukin A. N., Arsentyev I. N., Bondarev A. D., Tarasov I. S. Investigations of nanodimensional Al2O3films deposited by ion-plasma sputtering onto porous silicon. Semiconductors. 2015;49(7): 915–920. https://doi.org/10.1134/S10637826150702109. Seredin P. V., Lenshin A. S., Mizerov A. M., Leiste H., Rinke M. Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111). Applied Surface Science. 2019;476: 1049–1060. https://doi.org/10.1016/j.apsusc.2019.01.23910. Seredin P. V., Leiste H., Lenshin A. S., Mizerov A. M. Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(111) heterostructures. Applied Surface Science. 2020;508(145267): 1–14. https://doi.org/10.1016/j.apsusc.2020.14526711. Lenshin A. S., Barkov K. A., Skopintseva N. G., Agapov B. L., Domashevskaya E. P. Influence of electrochemical etching modes under one stage and two Stage formation of porous silicon on the degree of oxidation of its surface layer under natural conditions. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2019;21(4): 534–543. https://doi.org/10.17308/kcmf.2019.21/2364 (In Russ., abstract in Eng.) 12. Buttard D., Dolino G., Bellet D., Baumbach T., Rieutord F. X-ray reflectivity investigation of thin p-type porous silicon layers. Solid State Communications. 1998;109(1): 1–5. https://doi.org/10.1016/S0038-1098(98)00531-613. Lenshin A. S., Seredin P. V., Agapov B. L., Minakov D. A., Kashkarov V. M. Preparation and degradation of the optical properties of nano-, meso‑,and macroporous silicon. Materials Science in Semiconductor Processing. 2015;30: 25–30. https://doi.org/10.1016/j.mssp.2014.09.04014. Ksenofontova O. I., Vasin A. V., Egorov V. V., Bobyl’ A. V., Soldatenkov F. Yu., Terukov E. I., Ulin V. P., Ulin N. V., Kiselev O. I. Porous silicon and its applications in biology and medicine. Technical Physics. 2014;59(1): 66–77. https://doi.org/10.1134/S1063784214010083