Aspects of computer study of the effect of high-energy heavy ions on the properties of secondary-emission channel multipliers
Authors:   Joint Institute for Nuclear Research, Рukhaeva Nelli , Eremina Antonina ,   North Ossetian State University named after K.L. Khetagurov, Kasumov Yuri ,   North Caucasus Mining and Metallurgical Institute (State Technological University), Kuchmezov Sultan ,   North Caucasus Mining and Metallurgical Institute (State Technological University)
Published: January 2025

Introduction. Many devices, including multichannel secondary electron multipliers, are used under the influence of external sources of heavy ions, which have a certain effect on the performance of these products, on the completeness of their functioning. This paper will present the main approaches to studying the degree of influence of high-energy ions on the amplifying capacity of electron multipliers, in accordance with the possible change in the resistive properties of the channel walls. The mechanism of the influence of these radiations on the main material from which the plates are made - lead silicate glass - will also be determined. Materials and Methods. Theoretical analysis carried out on the basis of studied specialized literature and available practical work experience. System analysis. Mathematical modeling of physical processes. Results. The results of studies on the mechanism of conductivity formation in lead-silicate glasses used in electron multipliers are presented, the influence of high-energy heavy ions on their amplification capacity is predicted. It is established that the resistance factor of channel walls and the entire structure is especially relevant when considering the processes of charging the walls of multiplier channels. Approaches for computer studies of the degree of influence of charging on the amplification processes in MCPs are developed. Models of electron behavior in the channel and calculation of the gain coefficient are proposed, taking into account the phenomenon of charge saturation caused by variations in the resistance of the walls. Discussion. It was found that the mechanism of conductivity formation in lead-silicate glasses, caused by external disturbing effects, is associated with the formation of neutral lead atoms and neutral oxygen atoms - color centers (CC). In this case, the color of the sample changes and the electrical resistance decreases by several orders of magnitude. The concentration of CC directly affects the conductivity of the lead-silicate glass sample, and accordingly, the products of application - multichannel electron multipliers. Changes in the resistive characteristics of the resistance of the channel walls and the entire structure are relevant when considering amplification processes in the channel, as well as analyzing the phenomenon of charge saturation. Conclusion. The external impact of high-energy heavy ions on the ohmic properties of lead-silicate glasses and secondary-electron channel multipliers made from them was predicted with the formation of hole-type F-color centers; The change in the electronic properties of lead-silicate glasses during their technological processing was considered. It was established that the resistance factor of the channel walls and the entire structure is especially relevant when considering the processes of charging the walls of the multiplier channels. Resume. The results of the research may be useful in the design of multichannel secondary emission multipliers used in products exposed to high-energy radiation.