bluuebunny/crossref_metadata_2025 huggingface dataset:
Development of a Gloss Tester for Paint Coatings
Authors: Matsuta Morihiro , Kito Kanji
Published: November 2005

A new portable gloss tester has been developed, which indicates a quantity closely related to the degree of visual gloss without the influence of the orange peel effect and surface convexity. Our gloss measurement is based on the fact that the gloss intervals are well correlated with the maximum slope of the dark-to-bright transition curve for a reflected image of a knife-edge pattern. In order to eliminate the orange peel effect, an optical measurement system has been designed to satisfy the following relations: 2R<λw and 2Δ
b≪r
w, where R, Δ
b, λw and r
w are respectively the width of the illuminated area of the sample, the distance between the sample and the image, the wavelength, and the radius of curvature of waviness. The performance of the gloss tester is; reproducibility, within ±1 percent; correlation factor between the degrees of physical and visual gloss, 0.99. The tester is 135 mm × 92 mm × 280 mm in size.
Soft and Ultrasoft X-Ray Fluorescent Spectrometer Using Total Reflection Monochromator
Authors: Arai Tomoya
Published: November 2005

Since specular reflection of characteristic X-rays can become nearly total external reflection at grazing incidence, total reflection analysis offers an alternative to the wavelength dispersive method based on Bragg reflection.
Using curves of calculated and measured intensity versus glancing angle, a high-efficiency mirror material was selected and the optimized optical geometry and filtering conditions were determined. Short wavelength X-rays could be eliminated and overlapping interference of equal and longer wavelength X-rays was excluded using the equation for determining the element concentration. Analytical examples for Al, C and B are described.
Neutron Small-Angle Scattering from Single-Walled Liposomes of Egg Phosphatidylcholine
Authors: Komura Shigehiro , Toyoshima Yoshinori , Takeda Takayoshi
Published: November 2005

Neutron small-angle scattering from single-walled liposomes of egg phosphatidylcholine in D2O solution has been measured in order to determine the geometry of the sonicated small liposomes. The results show that the inner and outer radii or the liposomes are 60 and 100 Å, respectively, and that the statistical deviation or the radius amounts to 20% of the average value of the outer radius.
Calculation of Substitutional Impurity Distribution by Dissociative Mechanism
Authors: Morooka Masami , Yoshida Masayuki
Published: November 2005

The basic equations for the dissociative mechanism of diffusion are a set of non-linear differential equations. Sturge obtained an approximate linear differential equation for the substitutional impurity distribution and solved it approximately (Proc. Phys. Soc. 73 (1959) 297).
In this paper, Sturge's equation is solved numerically and the result is compared with his approximate solution. It is found that the approximate solution agrees fairly well with the numerical solution.
Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si
Authors: Kunii Yasuo , Tabe Michiharu , Kajiyama Kenji
Published: November 2005

The authors demonstrate that CVD amorphous Si crystallizes epitaxially on a (100)Si substrate with furnace annealing at temperatures of 600°C or below. Cleaning the substrate surface and depositing amorphous film at a low temperature with a high deposition rate are essential to this procedure. After loading the substrate into a CVD reactor, the substrate surface is first etched with H2 to remove native oxide at 1100°C, and then with HCl to prevent foreign atom adsorption up to a low deposition temperature of 550°C. The low temperature prevents microcrystallite formation, and the high deposition rate hinders foreign atom inclusion during deposition. With the appropriate cleaning and deposition conditions, the resultant epitaxial layer crystallinity has been proven to be good through Rutherford backscattering and reflection electron diffraction measurement.
Infra-Red Absorption Spectroscopic Study of β-Sialons in the System Si3N4–Al2O3·AlN
Authors: Takase Akira , Umebayashi Seiki , Kishi Kazushi
Published: November 2005

β-sialons (Si6-z
Al
z
O
z
N8-z
) have been formed in the system Si3N4–Al2O3·AlN using hot-pressing at 1800°C under a pressure of 200 kg/cm2 in 1 atm. N2. In the spectral ranges 1050–850 cm-1 and 600–300 cm-1, certain infra-red bands decreased linearly in their frequencies as z increased. The bands in the former range are assigned to the stretching vibration of Si–N and the bands in the latter range to the bending vibration of Si–N–Si and N–Si–N groups in the β-Si3N4 three-dimensional network. When z increases, Si and N in the β-Si3N4 network are largely replaced by Al and O, respectively. This results in an increasing degree of structural disorder of the network and a decrease in the force constants for those vibrations. The decrease in the frequency can be explained by this decrease in the force constants.
Amplitude and Frequency Stabilization of an Internal-Mirror He–Ne Laser
Authors: Sasaki Akira , Hayashi Takao
Published: November 2005

Both the amplitude and the frequency of an internal-mirror He–Ne (λ=633 nm) laser are stabilized simultaneously by a new simple method. The total back beam intensity is detected with a silicon photodiode. The electric voltage signal proportional to the total back beam intensity is applied to a dc servomotor which rotates a cooling fan controlling the laser tube length change due to thermal expansion; consequently the laser amplitude and frequency are stabilized at the same time. The relative amplitude stability of ±0.1% and the relative frequency stability of ±5×10-9 are obtained over a period of 10 minutes or longer. Each power output of mutually orthogonal components of polarization is also stabilized.
Micro-Probe Reflection High-Energy Electron Diffraction Technique. II. Observation of Aluminum Epitaxial Growth on a Polycrystal-Silicon Surface by Vacuum Evaporation
Authors: Ichikawa Masakazu , Hayakawa Kazunobu
Published: November 2005

A micro-probe reflection high-energy electron diffraction (micro-probe RHEED) technique has been used to observe the epitaxial growth of Al at room temperature on a polycrystal-Si (poly-Si) surface. A new beam-scanning method has also been developed to remove the image-shortening effect caused by a small glancing angle of incidence. From the Auger electron intensities, diffraction patterns and RHEED microscope images of an Al-deposited poly-Si surface, it is found that an Al film several atomic layers thick with the Al lattice constant grows epitaxially on the poly-Si surface with almost uniform sticking probability. The results show that the micro-probe RHEED technique is useful in studying the crystal growth of materials deposited on crystal surfaces, especially on polycrystal surfaces.
Morphological Changes in Se Films Deposited on KI Irradiated by Electrons
Authors: Nagashima Seiichi , Ogura Iwao
Published: November 2005

The morphology and epitaxial growth of Se deposits on air- and vacuum-cleaved KI surfaces irradiated by electrons at a dose of 109–1014 electrons/cm2·s at 250 eV, in both high vacuum and UHV conditions, have been studied by transmission electron microscopy and diffraction. Without the electron irradiation, Se deposits of nearly square shapes grew with the orientation (101̄0), [0001]Se//(001), [110][11̄0]KI. With electron irradiation in high vacuum, the morphology of the Se deposits changed drastically, depending on the cleavage and the irradiation density. The epitaxy gradually worsened with increasing irradiation density. With heavy irradiation in high vacuum, amorphous Se deposits were formed. In the case of UHV, the epitaxy was good, and amorphous Se deposits were not observed. The mechanism of formation of the amorphous Se deposits is discussed in terms of the contamination layer produced by the interaction between the electron beam and residual gases.
Temporal Changes in Size Distribution of Laser-Produced CsH Particles
Authors: Sato Takashi , Yabuzaki Tsutomu , Ogawa Toru
Published: November 2005

The first measurement of the size distribution of the laser-produced CsH particles is reported, with a particular attention given to its temporal change. The measurement is made by using the wavelength- and polarization-dependences of the light scattering by laser-produced particles. The Mie theory is used for the light scattering by each particle, which is assumed to be spherical. To approximate the shape of size distribution, the distribution functions of Gauss, Stevenson and Junge are used as test functions, each having three parameters. The best-fit test function and its parameters are determined at each moment after the beginning of laser-irradiation, by comparing theoretical and experimental scattered light intensities. With the obtained results, the causes of the particle growth are also discussed.
Optical Absorption and Modification of Band Edges in Irradiated GaP
Authors: Endo Tamio , Nakanishi Yoshishige , Wada Takao
Published: November 2005

GaP crystals were irradiated by 10 MeV electrons to a maximum dose of 3.5×1019 electrons/cm2 or by fast neutrons to investigate the effects of radiation-induced defects on the band edges. The “below-gap” and “near-edge” absorptions of the irradiated GaP increase with the electron or neutron dose. The optical gap shrinkage between the parabolic bands is directly proportional to the 2/3 power of the radiation defect density. The photoconduction gap was obtained as the onset of transitions between delocalized states from the photoconduction spectra. The defect-induced photoconduction gap shrinkage is (20±5) meV, while the optical gap shrinkage is ∼67 meV for a dose φ=1×1017 electrons/cm2. Thus the deeper states of about 2/3 of the parabolic bands penetrating into the original gap by the defects are localized.
Molybdenum Etching Using CCl4/O2 Mixture Gas
Authors: Kurogi Yukinori , Kamimura Kazuo
Published: November 2005

Molybdenum was etched using CCl4/O2 mixture gas. Typical etch rate is about 80 nm/min, and its relative etch rate ratio to resist AZ1350J was 2: 1. Etch rates of silicon and silicon-dioxide were negligibly small, as compared to molybdenum etch rate. The dissociation process of CCl4/O2 analogous to the dissociation process in CF4/O2 mixture gas plasma was observed. Molybdenum-oxide was detected on the surface of silicon, silicon-dioxide and the resist, which were etched with molybdenum, using Auger electron spectroscopy. The deposited molybdenum-oxide increases the etch selectivity of molybdenum over underlying materials. The lateral etching rate after etching end point was about 13 nm/min, in the typical etching condition. The main reason for the pattern width narrowing in the etching was due to moderate resist slope.
Anodic Oxide Thin Films on Iron in Neutral Borate-Boric-Acid Solution with and without Chloride Ion
Authors: Tokunaga Katsushi
Published: November 2005

The composition of anodic oxide films formed on iron in neutral borate-boric-acid solutions with and without chloride ions was examined by sensitive ESCA, IMMA, electron diffraction and FT-IR spectroscopy. In general, the oxide thin film consisted of a two layer structure of “Fe3O4 or γ-Fe2O3” next to the metal and “γ-FeOOH or ferric boron hydroxo complexes such as Fe(OH)(BO2)2 or FeOHB4O7” at the oxide solution interface, with iron in its trivalent state. The outermost part of the film contained minor impurities or contaminations such as boron, calcium and silicon, all of which were in the oxide state. The thickness of the passive film was about 20–50 Å. The addition of the chloride ion to borate solutions increases the amount of γ-FeOOH present. Corrosion pits are preferentially nucleated at inclusions such as Si and Mn.
Estimation of Position Irregularity of 2-D Array Using Diffraction Intensities of Laser Light
Authors: Adachi Masaaki
Published: November 2005

This paper reports a practical and simple method of measuring the position variance in a two-dimensionally arrayed pattern. It uses the intensity of laser light diffracted by the array. The measurement errors were estimated by computer simulation for an array with large position irregularity consisting of several hundred elements. The proposed method is considered to be of practical use because of the agreement in the variances between the input of the computer from which the array was built up and the output obtained experimentally from the array.
Dielectric Properties of Dextran Gel Sephadex G-25 Dispersed in Aqueous Phases
Authors: Ishikawa Akira , Hanai Tetsuya , Koizumi Naokazu
Published: November 2005

Dielectric relaxations were observed in beds of dextran gel beads preconditioned with different salt solutions and subsequently dispersed in deionized water in a frequency range of 10 kHz to 1 MHz. The relative permittivities and electrical conductivities of the gel beads were evaluated from the observed relaxations using the theory of interfacial polarization. The relative permittivities remained the same irrespective of the ion species in the salt solutions used for preconditioning, while the conductivities had values characteristic of the cation species in the respective salt solutions. A similar analysis was also carried out on a series of specimens with different concentrations of KCl in a continuous medium. The conductivity of the gel beads increased with the KCl concentration as expected from the theory of Donnan equilibrium.
Extreme Ultraviolet Spectra of Emission from Plasma Focus. III. AlV to IX and SiVI to X Ion Lines from 60 to 350 Å
Authors: Fukuda Kuniya , Hasama Toshifumi
Published: November 2005

Multiply-ionized Al- and Si-ions were produced in plasma focus discharges in He or Ar ambient gas using various electrodes. The extreme ultraviolet spectra of emissions from Al-and Si-ions were observed in the wavelength range from 60 to 500 Å with a grazing incidence spectrograph. The observed lines were mainly 2s-electron excitation lines from AlV(2s22p5) to IX(2s22p) (or SiVI to X) for discharges in Ar gas and 2p-electron excitation lines from AlV(2s22p5) to VII(2s22p3) (or SiVI to VIII) for discharges in He. The relative line-intensities were determined, and the Al- and Si-ion lines observed have been tabulated together with their relative intensities. The results show anomalous population distributions among the 2s-electron excitation levels in AlVII to IX (or SiVIII to X) ions for the discharges in Ar gas, and these anomalous distributions are discussed in this paper.
Heteroepitaxy of CuInS2 on ZnSe by LPE Method from In Solution
Authors: Takenoshita Hiroshi , Nakau Tanehiro
Published: November 2005

Heteroepitaxy of CuInS2 has been carried out on ZnSe by the LPE method from an In solution. The optimum growth conditions were a maximum temperature T
m of 700°C and a cooling rate CR of 0.5°C/min. LPE growth was not successful when T
m was 500–650°C. The critical value of T
m for successful LPE growth was near 700°C. The coefficient k
LPE defined as the ratio of the optimum T
m to the melting temperature of the solute, was than those for other chalcopyrite materials investigated previously. The optimum growth conditions are considered to be related to the energies of formation and melting temperatures of the substrate and solute, and the I2-VI, III2-VI3 and other compounds produced in the LPE system.
Quantitative Analysis of the Orientation of Mineral in Bone from Small-Angle X-Ray Scattering Patterns
Authors: Matsushima Norio , Akiyama Morio , Terayama Yoshio
Published: November 2005

The small-angle X-ray scattering data from a rabbit femur is quantitatively evaluated with respect to the mineral distribution in bone. The results show the existence of a needle-like mineral with a length of at least 300 A and a preferred orientation of the needle axes parallel to the long axis of the bone. The angular distribution of the needle axes gives a value of 30° for the mean inclination.
Amorphous Built-in-Field Effect Photoreceptors
Authors: Maruyama Eiichi
Published: November 2005

Thin-film photodiodes with the graded-composition structures of amorphous Se–As–Te have been developed. The physical mechanism of the buit-in-field effect in these highly resistive photodiodes has been clarified. In order to realize complicated composition distributions, multi-layer evaporation technology has also been developed. The physical properties of multi-layered films and those of the uniform amorphous film have been compared, and it has been shown that a multi-layered film of 1 nm periodicity can be regarded as an almost uniform amorphous material. Built-in-field effect photoreceptors can be utilized not only for TV pickup tubes but also for highly sensitive xerographic plate and other solid-state sensors.
Temperature Sensitive Helical Pitches and Wall Anchoring Effects in Homogeneous Monodomains of Ferroelectric Sm C* Liquid Crystals, nOBAMBC (n=6-10)
Authors: Kondo Katsumi , Takezoe Hideo , Fukuda Atsuo , Kuze Eiichi
Published: November 2005

2-methylbutyl p-(p-n-alkoxybenzylidencamino) cinnamates were synthesized and their helical pitches in the Sm C* phase were measured by optical microscopic and/or diffraction methods. After the phase transition from Sm A to Sm C*, the pitches increase steeply within 0.5°C, attain relatively broad maxima, and then gradually decrease in all the nOBAMBC investigated, except for HpOBAMBC (n=7) whose pitch shows some anomalies at low temperatures. The “odd-even effect” is clearly observed in the dependence of the maximum pitch on the alkoxy chain length. The dependence of the helical pitch on cell thickness has also been studied. During the steep increase, the wall anchoring effect is not observed when the cell is at least thicker than 100 µm; at lower temperatures, however, the pitch depends on the thickness even when the cell is as thick as 200 µm or more. Finally, the observed temperature variation of the pitch is compared with the Landau-type phenomenological theories so far proposed.
X-Ray Photoelectron Spectroscopy of Ag- and Cu-Doped Amorphous As2Se3 and GeSe2
Authors: Ueno Tokihiro , Odajima Akira
Published: November 2005

Ag- and Cu-doped amorphous As2Se3 and GeSe2 were studied by XPS. The binding energies and/or Auger kinetic energies were determined for films of Ag and Cu, and amorphous films of Ge, As, Se, GeSe2, As2Se3, Ag-doped GeSe2, Ag- and Cu-doped As2Se3. The chemical shifts revealed that electrons are transferred from doped metal atoms to As and Se for As2Se3, and to Ge and Se for GeSe2. The valence band spectra were also examined. Modifications of amorphous networks are discussed.
Energy Conversion Process of p-i-n Amorphous Si Solar Cells
Authors: Kuwano Yukinori , Tsuda Shinya , Ohnishi Michitoshi
Published: November 2005

The photovoltaic conversion process of a p-i-n amorphous silicon (a-Si) solar cell is investigated, and its theoretical limit efficiency is calculated. Under AM-1 illumination, the theoretical limit efficiency of the p-i-n a-Si solar cell is estimated to be 12.5%, while that under fluorescent lamp illumination is estimated to be 25.9%. In the calculation of the charge distribution in a-Si film, the “Shifted U” distribution is proposed for the distribution function of gap states. Poisson's equation is directly solved as a boundary condition problem, and then the output characteristics of the p-i-n a-Si solar cell are claculated by solving the continuity equation for the photo-generated carriers.
Crystal Structure of InSe Grown from Melt and Its Structure Transition
Authors: Inoue Shuji , Yoshida Tetsuo , Morita Takeo
Published: November 2005

The crystal structure of InSe grown from the melt in evacuated capsules, was determined by the X-ray single crystal technique. It was ascertained that the rhombohedral structure transforms into the h.c.p. structure under heat-treatment, and that the reverse transition is also possible. Many InSe whiskers were obtained and the crystallographic relation between the two structures in the whiskers is discussed. Some h.c.p. whiskers gave anomalous layer lines in their X-ray rotation patterns, and this is attributed to multiple reflections caused by the fibrous structure of the whiskers. The atomic distances within the coordination units of the InSe structures are revised.
X-Ray Determination of Incommensurate Superlattices in K2SeO4 and (NH4)2BeF4
Authors: Kudo Seishi
Published: November 2005

Incommensurate superlattice reflections have been observed by X-ray diffractometry in K2SeO4 and (NH4)2BeF4. A simple method is proposed based on the ω-scan technique. This is free from systematic errors, and is not affected by the precision of the lattice constant determination. The incommensurate superlattice parameter of K2SeO4 measured using this procedure is in agreement with that measured using neutron scattering. The incommensurate structure of (NH4)2BeF4 is elucidated for the first time by the present method.
Diffusion Mechanism of Nickel and Point Defects in Silicon
Authors: Kitagawa Hajime , Hashimoto Kimio , Yoshida Masayuki
Published: November 2005

The in-diffusion of nickel into silicon and the annealing of nickel in silicon have been studied experimentally at 900°C. The variations in concentration of substitutional nickel with time are described well by an exponential function predicted from a dissociative mechanism, in both the in-diffusion and annealing processes. The time constant in the annealing process is substantially independent of the initial concentration of substitutional nickel.
These results support the theory that nickel in silicon diffuses by a dissociative mechanism and that the dominant point defects in silicon are vacancies.
Oxygen-Related Donors Stable at 700–800°C in CZ–Si Crystals
Authors: Yasutake Kiyoshi , Umeno Masataka , Kawabe Hideaki , Nakayama Hiroshi , Nishino Taneo , Hamakawa Yoshihiro
Published: November 2005

A variety of silicon-oxygen clusters have been induced in CZ–Si crystals by multi-step annealing at temperatures between 450 and 800°C. Five-step annealing (450°C, 100 h+500°C, 40 h+600°C, 20 h+700°C, 20 h+800°C, 20 h) has generated oxygen-related donors at a concentration of more than 1015 cm-3. The silicon-oxygen clusters were investigated using infrared absorption, resistivity, photoluminescence and TEM. In carbon-lean CZ–Si crystals, oxygen-related donors, which are stable at 700–800°C, were found to be related to both oxygen clusters nucleated at dislocation dipoles and to the so-called thermal donors. However, in carbon-rich CZ–Si crystals, oxygen-related donors, which are stable at 700–800°C, were related to oxygen clusters nucleated at carbon atoms, which can gather many oxygen atoms without forming dislocation dipoles.
Electron Microscopic Studies on Domain Structure of PbZrO3
Authors: Tanaka Michiyoshi , Saito Ryuichi , Tsuzuki Kaoru
Published: November 2005

The domain structure of a typical antiferroelectric substance, lead zirconate, is examined in detail fori the first time by electron diffraction and electron microscopy. The 90° and 60° domain configurations can be consistently understood on the basis of the pseudo-cubic unit cell. 180° domains, which are characteristic of the antiferroelectric phase, are observed. The displacement vectors between the domains are determined as ¼[21n], ¼[21̄n] and ¼[02n] (n=0 or 2) by the α-fringe theory for off-Bragg settings. Crystal structure images of the domains reveal how the unit cells connect across the domain boundary. 90° and 180° domains are found in the intermediate phase between the antiferroelectric and the paraelectric phases. The fact that 180° domains are observed is important evidence indicating that the phase is ferroelectric.
Mode-Locked Traveling-Wave Oscillations of an Internally Loss-Modulated He–Ne Ring Laser
Authors: Miyashita Toyokatsu
Published: November 2005

We have investigated novel behavior in a He–Ne ring laser induced by internal loss-modulation. The characteristic behavior is mode-locked unidirectional and bidirectional traveling-wave oscillations which depend upon the fine tuning of the modulation frequency, modulator position, and modulation depth. The mode-locked unidirectional oscillation is bistable when the modulator is placed at specific positions named natural crossing points.
We have considered the behavior theoretically using the coupled-mode equations for a multimode gaseous ring laser developed previously. Analytical solutions for a simple case are investigated to find the general behavior, and numerical solutions and detailed experiments for multimode operations are also shown. They are in good agreement with each other.
Assessment of Image Quality of Negative- and Reversal-Processed Medical X-Ray Films with Intensifying Screens by Entropy Method
Authors: Uchida Suguru , Fujita Hiroshi , Inatsu Hiroshi
Published: November 2005

The image quality, mainly from the viewpoint of granularity, of negative- and reversal-processed X-ray films with intensifying screens was assessed by the entropy method using two types of screen-film system. It was found, from the transmitted information (TI) or the relative efficiency of transmission η versus the relative exposure and density, that optimum conditions under which TI or η is a maximum exist for both negative and reversal X-ray films. It was also shown, from the conditional entropy H

x
(y) which refers to granularity, that negative and reversal systems have better and poorer regions and that reversal systems are better at higher exposures than negative systems. This was confirmed by measuring the Wiener spectra.
Thomson Scattering Apparatus for Simultaneous Six-Position Measurements in the JFT-2 Tokamak
Authors: Yamauchi Toshihiko , Sano Kazuo , Kawashima Hisato , Kumagai Katsuaki , Matoba Tohru
Published: November 2005

A Thomson scattering apparatus for measuring the electron temperature and density profiles of the JFT-2 plasma has been constructed. Measuring positions are determined by six fibers separated from each other by a distance of approximately 2 cm. The Littrow type spectrometer provides 48 wavelength elements with 57–250 Å. The 48-photo-multipliers are arranged on the output field of the fibers. Spatial profiles of T
e and n
e in the range 0.05–1.5 keV and 1013–1014cm-3 in the JFT-2 Tokamak have been obtained with only one discharge.
Stress Relaxation Study of Fine Structure of γ-Loss Band of Branched Polyethylene
Authors: Yamada Yoshinori , Kakizaki Maeko , Hideshima Teruo
Published: November 2005

The shear relaxation modulus of polyethylene samples with various degrees of branching is measured at many temperatures in the so-called γ-loss band, between –190°C and –100°C, using a torsional stress relaxation apparatus. Three relaxations, named γ1, γ2 and γ3 in order of descending temperature, are observed separately. Their master curves and relaxation spectra are determined by the method of reduced variables. The activation energies obtained from the shift factors for the γ1-, γ2- and γ3-relaxations are ca. 20, 11 and 6 kcal/mol respectively. For each of these relaxations the activation energy and the shape of the spectrum are found to be independent of the crystallinity and degree of branching. Using these results, the molecular mechanisms responsible for these three relaxations are discussed.
Stopping Properties of Molybdenum Films against Arsenic Ion Implantation
Authors: Fujinaga Kiyohisa , Harada Hiroyuki
Published: November 2005

The stopping properties of Mo and Mo2N films against As ions have been investigated using SIMS. The implantation of arsenic ions in Mo gives concentration profiles broader than the LSS theoretical predictions, with a tail showing penetration into the region beyond the peak concentration. The main cause of this is thought to be channeling occurring in some columnar grains with the <110> direction aligned with the tilted incident beam. The channeling effect depends on the ion dose and the preimplantation annealing temperature. The profiles in Mo2N also have an anomalous tail generated by channeling. The profile broadening in Mo2N is less than that in Mo.
Sputtering Yields of Si and Ni from the Ni1-xSix System Studied by Rutherford Backscattering Spectrometry
Authors: Kim Su Chol , Yamaguchi Satoru , Kataoka Yoshihide , Iwami Motohiro , Hiraki Akio , Satou Mamoru , Fujimoto Fuminori
Published: November 2005

Sputtering yields of Si and Ni from thin layer films of Ni–Si compounds (Ni1-x
Si
x
), including the pure materials (Ni and Si), caused by 5 keV Ar+ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni1-x
Si
x
increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni1-x
Si
x
which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.
Far Infrared Optical Properties of Amorphous As–Se System
Authors: Onari Seinosuke , Sugino Osamu , Kato Michio , Arai Toshihiro
Published: November 2005

The far infrared reflection spectra of amorphous As
x
Se1-x
systems (0≤x≤0.5) were measured in the wavenumber range 30–500 cm-1 at room temperature, and one-mode type behaviors of the dominant modes were observed.
The optical constants were calculated by Kramers-Kronig analysis, and were also analyzed by the classical oscillator models. The effective charges of the AsSe3 pyramidal units were calculated.
The dependence of the infrared dominant modes on the As concentrations show that hetero-bondings and therefore pyramidal units are predominant in this system, and slight modifications of the molecular models are necessary to explain the experimental data.
Thermally-Stimulated Current in p-Type CdTe Annealed in Various Atmospheres
Authors: Yokota Katsuhiro , Katayama Saichi , Yoshikawa Toshiharu
Published: November 2005

The thermally-stimulated currents were measured in the space-charge region of a Schottky diode formed on as-grown or annealed p-type CdTe. The as-grown samples were annealed at temperatures from 200–600°C for 300 min in Cd or Te vapor. Four traps, all of which have been previously reported in the literature, were found in as-grown CdTe at 0.24, 0.40, 0.48 and 0.53 eV above the valence band. Four new traps at 0.053, 0.11, 0.15 and 0.18 eV above the valence band were found in p-type CdTe annealed in Te vapor, and two traps with energies of E
v+0.098 and E
v+0.28 eV were found in p-type CdTe annealed in Cd vapor. It was evident from TSC measurements combined with the removal of a very thin film that the traps found in the annealed samples are localized near the surface.
Mechanical Behavior of Czochralski-Silicon Crystals as Affected by Precipitation and Dissolution of Oxygen Atoms
Authors: Yonenaga Ichiro , Sumino Koji
Published: November 2005

The mechanical behavior of Czochralski-silicon crystals as influenced by precipitation of oxygen atoms is investigated. The magnitudes of the upper yield stress and of the stress drop after yielding are observed to decrease drastically after annealing at 1050°C and to recover on subsequent annealing at temperatures higher than 1200°C. Changes in the amount of precipitated oxygen atoms due to such annealings are followed. A theoretical analysis of the yield behavior shows that dislocations punched out from precipitates play the most important role in the softening due to precipitation.
Characteristics of Josephson Junction Networks –State Diagram Calculations and Experiments of a Circuit in a Double Loop Structure with Five Dayem Microbridges–
Authors: Aomine Takafumi , Hidaka Mutsuo , Kusunoki Shigeru , Miyake Kazuo , Matsuo Kazuhiro , Kitagawa Tosio , Suzuki Chisato
Published: November 2005

Josephson junction networks or Josephson circuit systems are investigated systematically. A circuit topology with five junctions in a double loop structure is considered in this paper of the series. The static characteristics of the circuit system are analyzed by state-diagram calculations with an equivalent circuit model, and by experiments on a circuit consisting of Dayem microbridges. Uniform magnetic field, injected current biases and temperature variations are used to investigate the static characteristics. The experimental results could be explained qualitatively by the calculated state diagrams. It is confirmed that anti-parallel fluxoids can enter into two adjacent loops under certain current bias conditions.
Photoelectron Counting Statistics of Light Transmitted through Multimode Optical Fiber
Authors: Yoshikawa Manabu , Suzuki Norihito , Suzuki Tatsuro
Published: November 2005

The photon counting statistics of light transmitted through multimode optical fiber are studied. We have measured the intensity correlation function of light scattered by polystyrene particles suspended in water using transmitted He–Ne laser light. The coherence characteristics are degraded for long fiber and also fluctuations in the intensity occur. The experimental distribution is represented well by the theoretical distribution. The intensity fluctuation is reduced when an incoherent light source is used.
Effects of Oxidation on Aluminum Diffusion in Silicon
Authors: Mizuo Shoichi , Higuchi Hisayuki
Published: November 2005

Aluminum diffusion in Si affected by thermal oxidation is investigated. Aluminum diffusion in (100) oriented Si is enhanced by thermal oxidation. On the other hand, that in (111) oriented Si is enhanced at low temperature but retarded at high temperature. The difference in the diffusion of Al in Si masked with double-layered SiO2–Si3N4 films and with directly-formed Si3N4 films is found to be very small compared to the case of B and P. Furthermore, the addition of HCl to the oxidizing ambient is found to reduce the anomalous diffusion caused by oxidation. These experimental results are explained assuming that the diffusion of Al in Si proceeds by the interstitialcy mechanism in the Si.
X-Ray Observation of Ice VII-VIII Phase Transition
Authors: Yamamoto Katsuhiro
Published: November 2005

The ice VII-VIII phase transition was observed by the X-ray precession method using diamond-anvil pressure cells. Single crystals of ice VII–cubic, a=3.350±0.005 Å (sample A) and a=3.360±0.005 Å (sample B)–transformed into twin-mosaic crystals of ice VIII–tetragonal, a=4.68±0.01 Å and c=6.81±0.01 Å (sample A) and a=4.70±0.01 Å and c=6.84±0.01 Å (sample B)–. The formation of the twin mosaics caused some misorientation and distortion in the crystal. These disappeared during the VIII→VII transition. Thermal hysteresis of the transition temperature was observed.
A Hybrid Monte Carlo Calculation Estimate of Angular Distribution of Sputtered Atoms for keV Proton Bombardment
Authors: Okutani Tsuyoshi , Shimizu Ryuichi
Published: November 2005

A new hybrid Monte Carlo calculation approach for light ion sputtering has been developed. This approach allows the calculation of the angular- and energy-distributions of sputtered atoms as well as the sputtering yields, for light ion sputtering with yields too small for the conventional Monte Carlo calculation to be applicable.
The sputtering yield and the angular distribution of sputtered atoms were calculated for Ni- and TaC-targets bombarded with keV protons at angles of incidence of 0°, 60° and 80°. The calculation predicts that direct sputtering of surface atoms by incident protons results in a hump in the angular distribution of sputtered atoms for inclined incidence. These theoretical results are in fairly good agreement with the experimental results by Roth et al.
Study of Characteristics of AC Arc Discharges on Polluted Insulator Surfaces
Authors: Kaga Akio , Sato Masashi , Akagami Hideo
Published: November 2005

To elucidate the mechanism of pollution flashovers, the discharge characteristics of an arc were investigated by the authors in the following two cases. In the first case, the arc voltages were measured with flat plate insulators. It was found that if the length of the polluted portion is about 50% of the total gap length, the arc voltage when there is a portion free from the pollution between the electrodes is nearly equal to the voltage when the gap between the electrodes is polluted uniformly. In the second case, the arc discharge characteristics on the skirt surfaces of outdoor insulators were investigated, and it was found that the arc route at flashovers is such that the length of the arc discharges along the insulator surfaces is nearly equal to the length between skirt spacings bridged-over by the arcs.
Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure
Authors: Suzuki Akira , Ashida Hisashi , Furui Nobuyuki , Mameno Kazunobu , Matsunami Hiroyuki
Published: November 2005

Silicon dioxide layers have been thermally grown on the (0001̄)C face of 6H–SiC at 850–1100°C in wet O2 and studied by Auger analysis and ellipsometry. These oxide layers are quite homogeneous with a narrow interface width of \lesssim80 Å. The oxide thickness vs, the oxidation time follows the general relationship used for the thermal oxidation of Si. Temperature dependencies of the oxidation rate constants were obtained. C-V characteristics of Al–SiO2–SiC MOS structures were measured at 10 Hz–1 MHz. The accumulation, depletion and inversion regions are clearly observed under illumination. In the dark, the inversion does not occur, probably owing to the absence of minority carriers because of the large band gap. Frequency dispersion is not observed. The minimum surface-state density is ∼2×1012cm-2eV-1. The oxide resistivity and the breakdown strength are 2×1012 Ωcm and 2×106V/cm, respectively.
Secondary Electron Emission from Metal Targets under Heavy Ion Bombardment
Authors: Koyama Akio , Shikata Takashi , Sakairi Hideo , Yagi Eiichi
Published: November 2005

The secondary electron emission coefficients γ for in-situ vacuum-deposited Al, Cu, Ag and Au targets were measured under bombardment with He2+, C4+, C6+, N4+, N5+, N7+, O5+ and O8+ ions in the energy region of 4.5–8 MeV/amu. The ratio between γ and the electronic stopping power S increases with the incident energy. The energy dependence of γ is insensitive to the variation of the projectile charge state. The square of the effective charge Z
2
eff(z
1, c; Z
2) of a projectile with atomic number Z
1 and electric charge c in the thin surface region of the target with atomic number Z
2 is obtained. Z
2
eff(z
1, c; Z2) expresses the projectile charge state dependence of γ, and is equal to (z
2
1+c
2)/2+(z
1-c)+α(z
1-c)Z
2/3
2. α is a numerical factor and is 0.16 for N4+ ions.
Light Intensity Stabilization Using Highly-Efficient Faraday Rotator
Authors: Yoshino Toshihiko , Umegaki Shinsuke , Inoue Hiroaki , Kurosawa Kiyoshi
Published: November 2005

A method of stabilizing light intensity using a magneto-optic modulator with a highly-efficient Faraday rotator is proposed. The method utilizes the limiting action of the optical bistability. The maximum stabilization factor reached is 3.7×10-3, and to obtain the highest stability requires a current of only 0.1 A in the coils of the electromagnet, which is a favorable feature for the practical use of the stabilizer. The effects of the bias coil current and the relative angle of orientation of the polarizers on the stabilization factor are clarified. This stabilization method is suitable for depressing dc or low frequency noise.
Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
Authors: Munakata Chusuke , Yagi Kunihiro , Warabisako Terunori , Nanba Mitsuo , Matsubara Sunao
Published: November 2005

A flying-spot scanner that employs a chopped photon beam emitted from a cathode ray tube is reported. The photon beam scanns a planar p-n junction put on a metal electrode through a In2O3-coated transparent electrode and a 15 µm-thick mylar spacer. The ac photovoltage is picked up with electrodes through a condensor formed by the spacer. The photovoltage signal modulates brightness of another cathode ray tube to form a scanning image. Mean wavelength and chopping frequency of the photon beam are 507 nm and 2 kHz. Scanning image analysis is done using photocurrent density equations based on a step-like junction model. Three kinds of junctions, a solar cell, a partly-deep junction and a non-uniformly ion implanted one, have been evaluated to show the validity of the present method.
Measurement of Electron- and Ion Beam Energies and Currents in a Plasma Focus Discharge
Authors: Yamamoto Toshikazu , Kondoh Yoshiomi , Shimoda Katsuji , Hirano Katsumi
Published: November 2005

Measurements of energetic particle beams in a plasma focus with a Mather type device are presented. Rogowski coils are used for time-resolved measurement, and solid-state nuclear track detectors for time-integrated measurement of the beams. In the upstream direction with respect to the discharge current, only the electron beam with the maximum current of several kA was detected, which was approximately one percent of the discharge current. The electron energies of the beam were spread from 0.1 to 1 MeV. In the downstream direction, two successive emissions of ions were observed. The first emission had an extremely high energy of the order of some MeV and a low beam current of less than 10 A. The second emission, the main part of the ion beam, with energies of 100–800 keV, followed the first one with a time lag of several tens of nanoseconds, and the beam current reached several tens of amperes.
Phenomenological Considerations of Phase Transformations in Indium-Rich Alloys
Authors: Nittono Osamu , Koyama Yasumasa
Published: November 2005

Indium-rich alloys containing solute atoms such as Cd, Hg, Tl, Sn and Pb undergo four kinds of phase transformation: (1) fcc→fct (c/a>1), (2) fcc→fct (c/a<1), (3) fct (c/a<1)→fco→fct (c/a>1) and (4) fct (c/a<1)→fct (c/a>1). We have investigated these phase transformations using a phenomenological theory based on the Landau-theory of phase transformation. The appearance of all the phase in indium-rich alloys is well explained phenomenologically, and all the phase transformations are shown to be expressed by two thermodynamic parameters in the phase diagram. Some physical quantities such as the spontaneous strain, the elastic constant C' and the change in entropy are calculated and are compared with the experimental results. The dependence of the transformation temperature on the stress and the stress strain relation are also obtained.
Energy Analysis of High-Energy Neutral Atoms in the Sputtering of ZnO and BaTiO3
Authors: Tominaga Kikuo , Iwamura Satoshi , Shintani Yoshihiro , Tada Osamu
Published: November 2005

The time-of-flight method has been employed to investigate the type and energy of high-energy neutral atoms bombarding the substrates in films of ZnO and BaTiO3 prepared by both DC planar magnetron sputtering and conventional DC diode sputtering. The high-energy neutral atoms are found to be oxygen atoms. The dependence of the flux of high-energy neutral oxygen atoms and negative oxygen ions on the pressure has also been measured for the planar magnetron sputtering of ZnO. It is shown that the high-energy particles bombarding the substrate are composed of neutral oxygen atoms at higher gas pressures ranging above 0.01 Torr, but negative oxygen ions are comparable with neutral oxygen atoms at pressures of the order of 10-3 Torr. The production mechanism of these energetic oxygen species is discussed.
Detection Efficiency of a Continuous Dynode Electron Multiplier (Ceratron) for Positrons
Authors: Sueoka Osamu
Published: November 2005

The detection efficiency of the continuous dynode electron multiplier, Ceratron, for positrons has been obtained as a function of the incident energy E
in for a slow positron beam measurement. For comparison, the efficiency curve for a channel electron multiplier (CEM) was also obtained under the same conditions. In the use of a Ceratron, the counting rate in conventional use is low compared with that under the best conditions, obtained using a new method. The dependence of the efficiency on E
in is very large for the Ceratron, but rather small for the CEM. The dependences in the low energy region for the Ceratron and for the CEM show that calibration of the efficiency on E
in for each detector is necessary in the conventional use for electrons. The detection efficiency of a Ceratron for positrons under the best conditions is almost the same as that for a CEM.
Frequency Stabilization of a He–22Ne Laser by Intracavity Polarization Spectroscopy of CH4. II
Authors: Ohtsu Motoichi , Tako Toshiharu
Published: November 2005

This paper reports the improvements in frequency stability of a saturated dispersion locked He–22Ne laser at 3.39 µm. The intracavity polarization spectroscopy technique was employed to measure the saturated dispersion spectrum in CH4 (the E component of the P (7) line in the ν3 band), which was used as a frequency reference. To improve the frequency stability, the method using a Fabraday rotator was employed, which differs from that of the previous work. After stabilizing the temperature of the Faraday rotator crystal and the laser intensity, frequency stabilization was carried out. The highest frequency stability obtained was 3.0×10-13 at the integration time of 500s.
Higher-Order Mode Loss in Stationary State
Authors: Suzuki Toshio
Published: November 2005

The higher-order mode loss in a stationary state in an electron storage ring is analyzed both in the time domain and in the frequency domain. The effect of multiple passage is studied carefully. It is shown that the coupling impedance of frequencies harmonic with the revolution frequency contributes to the higher-order mode loss. In a high-Q RF cavity, the loss is large when the mode frequency is close to the harmonic of the revolution frequency and is small otherwise. Statistical arguments show that the expected value of the loss in a high-Q RF cavity is equal to the energy loss in a single passage. This is a good estimate for a room-temperature RF cavity, but for a superconducting cavity, the r.m.s. error of the estimated energy loss is quite large.
Transparent X-Ray Lithography Masks
Authors: Ebata Toshiki , Sekimoto Misao , Ono Toshiro , Suzuki Katsumi , Matsui Junji , Nakayama Satoshi
Published: November 2005

With a view to producing a rigid and optically-transparent mask for use in X-ray lithography, the membrane strength was theoretically analyzed as a function of the residual stress in films. In silicon nitride films, reduction of the residual stress resulted in an increase in membrane strength accompanied by a decrease in optical Transparency. Silicon nitride film was then combined with transparent silicon dioxide film and an Si3N4/SiO2/Si3N4 sandwich-structure membrane was developed. In this membrane, the compressive film force approached the tensile film force closely, keeping the membrane under tension. This produced an optically-transparent, rigid, smoothly stretched-out membrane. An X-ray lithography mask with 0.8 µm thick gold absorber patterns on this membrane was successfully used for four-level multiple-pattern replications using an optical auto-alignment system.
PbSnSeTe–PbSeTe Lattice-Matched Double-Heterostructure Lasers
Authors: Horikoshi Yoshiji , Kawashima Minoru , Saito Hisao
Published: November 2005

The first successful growth of PbSnSeTe–PbSeTe double heterostructure layers lattice-matched to Pb0.8Sn0.2Te substrate by liquid phase epitaxy is reported. PbSnSeTe–PbSeTe lattice-matched double heterostructure layers have also been grown on PbTe substrate by employing step-graded PbSeTe layers with solid compositions intermediate between the PbTe substrates and the double heterostructure layers. The lasing characteristics of the resulting laser diodes suggest that nonradiative interface recombination at PbSnSeTe–PbSeTe lattice-matched heterojunctions is negligibly small and that the temperature dependence of the laser threshold current at low temperatures is mainly determined by the doping in the active region. The lowest threshold current density for lasers with 11 cm emission wavelength has been found to be as low as 90 A/cm2 at 4.2 K. Laser oscillation has been observed at temperatures as high as 165 K.