bluuebunny/crossref_metadata_2025 huggingface dataset:
Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
Authors: Mao Zhigang , McKernan Stuart , Carter C. Barry , Yang Wei , McPherson Scott A.
Published: January 2018

Selective lateral growth of GaN is a promising technique for producing high quality material for microelectronic and optoelectronic devices. Single-crystal GaN/AlN layers have been grown on Si(111) substrates and subsequently used as the seeding layer for selective lateral overgrowth. GaN pyramids are formed above holes patterned in a Si3N4 mask. Transmission electron microscopy (TEM, which also denotes the microscope) of these structures shows that the GaN pyramid, GaN seed layer, and AlN buffer layer in the samples have the following epitactic relationship with respect to the Si substrate: and (0001)GaN ∥ (0001)AlN ∥ (111)Si. In the core of the pyramid (at or above the seed windows), dislocations thread through the pyramid perpendicular to the interface plane with very high density. Some of these threading dislocations, which originate from the GaN/AlN seed layer, form 90° bends and half loops at the edge of the pyramid core. In the lateral growth part of the GaN pyramid, the dislocation density is relatively low. The majority of dislocations thread through the pyramid parallel to the interface plane. Planar defects, usually parallel to the interface plane, were observed near the interface. The defect density decreases with the distance away from the interface, so that the top several microns of material maybe completely defect free. The mechanism of the growth of GaN pyramids is discussed and related to this defect structure.
Strong piezoelectric effects in unstrained GaN quantum wells
Authors: Langer R. , Simon J. , Konovalov O. , Pelekanos N.T. , André R. , Barski A. , Godlewski M.
Published: January 2018

Optical properties of GaN/AlGaN single quantum well (SQW) and multi quantum well (MQW) structures grown by nitrogen plasma assisted MBE on MOCVD-grown GaN/sapphire have been characterised by low temperature photoluminescence. Photoluminescence (PL) peaks corresponding to emission from very narrow (10 Å wide) SQWs are blue shifted with respect to the bulk GaN emissions but reveal strong red shift for wider SQWs (40 and 60 Å wide). Structural properties of SQW and MQW structures have been characterised by X-ray reciprocal lattice mapping in order to determine the strain conditions and composition of ternary AlGaN alloys. The results clearly demonstrate that in all structures under investigation the ternary (barrier) alloys are fully strained to underlying MOCVD-grown GaN/sapphire substrates. Despite of the fact that GaN quantum wells (QW) are unstrained, photoluminescence experiments clearly reveal the presence of extremely strong electric fields in the QW regions, which can be attributed to the interplay of the piezoelectric-type polarisation in the well and barrier layers due to Fermi level alignment.
Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
Authors: Gherasimova M. , Gaffey B. , Mitev P. , Guido L. J. , Chang K. L. , Hsieh K. C. , Mitha S. , Spear J.
Published: January 2018

Arsenic-doped GaN films and GaNAs films have been synthesized by MOCVD. Samples were grown on sapphire, GaN-coated sapphire, and GaAs substrates. Composition, structure, and phase distribution were characterized by EPMA, SIMS, XRD, and TEM. The arsenic content increases demonstrably as the growth temperature descreases from 1030 to 700 °C. In the high temperature limit, high quality arsenic-doped GaN forms on GaN-coated sapphire. In the low temperature regime, nitrogen-rich GaNAs forms under some growth conditions, with a maximum arsenic mole fraction of 3%, and phase segregation in the form of GaAs precipitates occurs with an increase in arsine pressure. Preferential formation of the nitrogen-rich phase on GaN-coated sapphire suggests the presence of substrate-induced “composition pulling”.
Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Authors: Kim Jong-Hee , Yang Gye Mo , Choi Sung Chul , Choi Ji Youn , Cho Hyun Kyung , Lim Kee Young , Lee Hyung Jae
Published: January 2018

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 1018 cm−3.
Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
Authors: Lantier R. , Rizzi A. , Guggi D. , Lüth H. , Neubauer B. , Gerthsen D. , Frabboni S. , Colì G. , Cingolani R.
Published: January 2018

The Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We performed a hydrogen etching at 1550oC on the 6H-SiC(0001) substrates to obtain atomically flat terraces. An improvement of the structural properties of GaN grown by MBE on such substrates after deposition of a LT-AlN buffer layer is observed. A value of less than 220 arcsec of the FWHM of the XRD rocking curve, showing a reduced screw dislocations density, is comparable with the best results reported until now for thick GaN samples. Photoluminescence showed a structured near band edge emission spectrum with evidence of the A, B and C free exciton recombinations.
Enhanced GaN Decomposition at MOVPE Pressures
Authors: Koleske D.D. , Wickenden A.E. , Henry R.L. , Twigg M.E. , Culbertson J.C. , Gorman R.J.
Published: January 2018

GaN decomposition was studied above 800 °C in flowing H2 and N2 for pressures ranging from 10 to 700 torr. From careful weighings of the GaN film on sapphire before and after annealing, the rates for GaN decomposition, Ga surface accumulation, and Ga desorption were obtained. An enhancement in the GaN decomposition rate was observed in H2 pressures greater than 100 torr. Even with this enhanced GaN decomposition, the Ga desorption rate is nearly constant at higher pressures. As a result, Ga droplets accumulate on the surface. For N2 pressures ranging from 76 to 400 torr no net enhancement in the GaN decomposition rate is observed and the GaN decomposition rate is reduced compared to identical annealing conditions in H2. This suggests that H2 is acting chemically to reduce the barrier for GaN decomposition. This may occur through a surface mediated dissociation of H2 followed by the formation of more mobile and volatile hydrogenated N and Ga species. The significance of this study for GaN growth is that by increasing the GaN decomposition, the Ga atoms diffuse farther and subsequently re-incorporate into the growing lattice, increasing the GaN crystal quality. Connections between the enhanced GaN decomposition rate and the coalescing of nucleation layer during the ramp to high temperature and the consequences for the high temperature growth are discussed.
Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask
Authors: Kawaguchi Yasutoshi , Nambu Shingo , Sone Hiroki , Yamaguchi Masahito , Miyake Hideto , Hiramatsu Kazumasa , Sawaki Nobuhiko , Iyechika Yasushi , Maeda Takayoshi
Published: January 2018

Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1 00> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO2 mask for the <11 0> and <1 00> stripe patterns. No voids are observed between the W or SiO2 mask and the overgrown GaN layer by using MOVPE.
Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
Authors: Marchand H. , Ibbetson J.P. , Fini P.T. , Wu X.H. , Keller S. , DenBaars S.P. , Speck J.S. , Mishra U.K.
Published: January 2018

We demonstrate a two-step process wherein the lateral epitaxial growth (LEO) of GaN from <100>-oriented stripes is initiated at a low V/III ratio to produce smooth, vertical <110> sidewalls, and where the V/III ratio is subsequently raised in order to increase the lateral growth rate. We find that the formation of the <101> facets is inhibited using this two-step process, and that it is possible to maintain the <110> sidewalls while achieving a large lateral growth rate. The ratio of lateral to vertical growth rate has been increased by up to factor of 2.6 using this approach relative to identical growth conditions without the initiation at low V/III ratio. The effect of lateral growth rate on the structural properties of the stripes is discussed.
Role of the Substitutional Oxygen Donor in the Residual N-Type Conductivity in GaN
Authors: Chen W.M. , Buyanova I.A. , Wagner Mt. , Monemar B. , Lindström J.L. , Amano H. , Akasaki I.
Published: January 2018

A detailed photoluminescence (PL) study reveals a striking similarity in local vibrational properties of a defect center in GaN as compared to that for the substitutional OP donor in GaP. This observation could be interpreted as if the center is in fact related to the substitutional oxygen donor in GaN. The deep-level nature experimentally determined for the defect center calls for caution of a commonly referred model that the substitutional oxygen donor is responsible for the residual n-type conductivity in GaN.
The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
Authors: Myers S. M. , Headley T.J. , Hills C.R. , Han J. , Petersen G.A. , Seager C.H. , Wampler W.R.
Published: January 2018

Hydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980°C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations ∧1 at.%, faceted H2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations ∧0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.
Modeling of a GaN Based Static Induction Transistor
Authors: Bunea Gabriela E. , Dunham S.T. , Moustakas T.D.
Published: January 2018

Static induction transistors (SITs) are short channel FET structures which are suitable for high power, high frequency and high temperature applications. GaN has particularly favorable properties for SIT operation. However, such a device has not yet been fabricated. In this paper we report simulation studies on GaN static induction transistors over a range of device structures and operating conditions. The transistor was modeled with coupled drift-diffusion and heat-flow equations. We found that the performance of the device depends sensitively on the thermal boundary conditions, as self-heating effects limit the maximum voltage swing.
CRYSTAL STRUCTURE AND DEFECTS IN NITROGEN-DEFICIENT GaN
Authors: Oktyabrsky S. , Dovidenko K. , Sharma A. K. , Joshkin V. , Narayan J.
Published: January 2018

We have studied crystal structure and associated defects in GaN films grown on sapphire under nitrogen-deficient conditions by metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD). The structural quality of the PLD films grown at 750 °C was comparable with those grown by MOCVD at 1050 °C having threading dislocations density of about 1010 cm−2 at a film thickness 150-200 nm. Microstructure of the PLD films grown at temperatures above 780°C was found to be similar to that of nitrogen-deficient MOCVD films indicating the loss of nitrogen due to thermal decomposition of the nitride layers. Nitrogen-deficient MOCVD and PLD films exhibit polycrystalline structure with a mixture of cubic zinc-blende and wurtzite hexagonal GaN grains retaining tetragonal bonding across the boundaries and hence the epitaxial orientations and polarity. Renucleation of the wurtzite phase at different {111} planes of cubic GaN results in a rough and faceted surface of the film. Most of the stoichiometric films displayed (0001) Ga-face polarity, but the renucleated inclined wurtzite grains grew in the opposite N-face polarity. The major defects related to the cubic structural metastability are stacking faults and microtwins which being nuclei of the metastable cubic phase have an extremely low energy. We elucidate that the cubic phase is more stable under the nitrogen deficiency and, therefore, can exist without decomposition at higher nitrogen vacancy concentrations in the material.
Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
Authors: Bidnyk S. , Little B. D. , Cho Y. H. , Krasinski J. , Song J. J. , Yang W. , McPherson S. A.
Published: January 2018

Single and multi-mode room temperature laser action was observed in GaN pyramids under strong optical pumping. The 5- and 15-micron-wide hexagonal-based pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. The pyramids were individually pumped, imaged, and spectrally analyzed through a high magnification optical system using a high density pulsed excitation source. We suggest that the cavity formed in a pyramid is of a ring type, formed by total internal reflections of light off the pyramids’ surfaces. The mode spacing of the laser emission was found to be correlated to the size of pyramids. The effects of pyramid geometry and pulse excitation on the nature of laser oscillations inside of the pyramids is discussed. Practical applications of the results for the development of light-emitting pixels and laser arrays are suggested.
NiIn as an Ohmic Contact to P-GaN
Authors: Ingerly D. B. , Chang Y. A. , Chen Y.
Published: January 2018

Based on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound NiIn as a possible ohmic contact. The contacts were fabricated by depositing NiIn on p-GaN films (p ∼ 2 × 1017 cm−3) using RF sputtering from a compound target. The as-deposited, NiIn contacts were found to be rectifying and using I-V characterization a Schottky barrier height of 0.82 eV was measured. Rapid thermal annealing of the contacts was shown to significantly decrease their resistance, with contacts annealed at 800 °C for 1 min yielding the lowest resistance. When annealed at 800 °C for 1 min NiIn contacts exhibited a specific contact resistance of 8-9 × 10−3 Ω cm2 as measured by the circular transmission line model. To allow a more universal comparison the more traditional Ni/Au contacts, processed under the same conditions, were used as a standard. Their measured specific contact resistance (ρc = 1.2 − 2.1 × 10−2 Ωcm2) was significantly higher than that of the NiIn contacts. Demonstrating that NiIn has promise as an ohmic contact to p-GaN and should be studied in greater detail.
GaN p-n Structures Fabricated by Mg Ion Implantation
Authors: Kalinina E.V. , Solov’ev V.A. , Zubrilov A.S. , Dmitriev V.A. , Kovarsky A.P.
Published: January 2018

In this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2×1016 cm−2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.
Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells
Authors: Schmidt T.J. , Bidnyk S. , Cho Yong-Hoon , Fischer A.J. , Song J.J. , Keller S. , Mishra U.K. , DenBaars S.P.
Published: January 2018

Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (Lexc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high energy peak was observed to always be lower than that of the low energy peak, but the difference was found to decrease greatly with increasing Lexc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region.
Phonon Dynamics and Lifetimes of Aln and Gan Crystallites
Authors: Bergman Leah , Alexson Dimitri , Nemanich Robert J. , Dutta* Mitra , Stroscio Michael A. , Balkas Cengiz , Davis Robert F.
Published: January 2018

The quasi-LO and quasi-TO modes of AlN crystallite were investigated. The analysis indicates that the Raman mode behavior concurs with Loudons’ model of mode-mixing in wurtzite (WZ) structure crystals which is due to the long-range electrostatic field. Phononlifetimes of GaN and AlN crystallites were studied via Raman lineshape. It was found that the low energy E2 mode lifetime is about an order of magnitude longer than that of the other modes, and that impurities impact significantly the phonon-lifetimes.
Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
Authors: Han Jung , Crawford M. H. , Shul R. J. , Hearne S. J. , Chason E. , Figiel J. J. , Banas M.
Published: January 2018

The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.
Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas
Authors: Shul R. J. , Zhang L. , Willison C. G. , Han J. , Pearton S. J. , Hong J. , Abernathy C. R. , Lester
Published: January 2018

Patterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 µm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3 /Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AlN, and InN as a function of BCl3/Cl2 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AlN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).
KERAGAAN PERTUMBUHAN DAN REPRODUKSI ABALON Haliotis squamata Reeve (1846) TURUNAN KETIGA
Authors: Permana Gusti Ngurah , Khotimah Fitriyah Khusnul , Susanto Bambang , Rusdi Ibnu , Haryanti Haryanti
Published: January 2018

Pengamatan pertumbuhan dan reproduksi abalon Haliotis squamata dilakukan di hatcheri Balai Besar Riset Budidaya Laut dan Penyuluhan Perikanan (BBRBLPP) Gondol, Bali. Tujuan dari penelitian ini untuk memperoleh informasi tentang keragaan pertumbuhan dan performansi reproduksi abalon turunan ketiga. Induk H. squamata turunan kedua hasil seleksi yang digunakan untuk menghasilkan benih turunan ketiga mempunyai ukuran panjang cangkang 6,5-7,0 cm. Benih dipelihara dalam bak beton berukuran 2,5 m x 1,2 m x 1,0 m yang diberikan feeding plate sebagai substrat penempelan dan dilengkapi dengan sistem aerasi dan sistem air mengalir. Pakan yang diberikan pada awal pemeliharaan adalah diatom jenis Nitzschia sp. dan Melosira sp. yang telah ditumbuhkan terlebih dahulu pada feeding plate sebelum penebaran benih. Benih F-3 dipelihara sampai menjadi calon induk untuk diamati perkembangan reproduksinya. Pengambilan sampel pertumbuhan dilakukan setiap 10 hari. Pengamatan reproduksi dilakukan pada saat abalon mulai tumbuh gonad sampai matang gonad stadia-III. Hasil penelitian menunjukkan bahwa pertumbuhan abalon sangat dipengaruhi ketersediaan pakan pada plate terutama pada hari ke-50. Proporsi jantan-betina abalon F-3 (3,3:1) meningkat dibandingkan dengan F-0 dari alam (2,5:1) menunjukkan ketidakseimbangan jumlah individu yang dapat disebabkan oleh tekanan seleksi. Abalon turunan ketiga pada umur 16 bulan mulai matang gonad dan dapat digunakan sebagai induk untuk pemijahan.Observation on the growth and reproduction development of Haliotis squamata had been undertaken in the hatchery of the Institute for Mariculture Research and Development (IMRAD) Gondol, Bali. The research was aimed to study of the growth and reproduction performance of filial-3 abalone in supporting seed production in hatchery. Larvae were obtained from natural spawning of filial-2 abalone broodstock with the length shell of 6.5-7.0 cm in the hatchery. Larvae were reared in 2.5 m x 1.2 m x 1.0 m concrete tank with aeration and water circulation system. Larval samples were taken every 10 days. Larvae were fed with diatom Nitzschia sp. and Melosira sp. Diatom were grown in the feeding plate before the stocking of abalone larvae. Gonadal development of F-3 abalone was observed from the beginning of the study until the mature gonad of stage-III. The result showed that the abalone growth was greatly influenced by the availability of feed in the plate especially at day 50. Abalone F-3 of sixteen months old reached maturity stage earlier compared to the control. The proportion of male-female of F-3 generation (3.3:1) was higher compared to F-0 (2.5:1), indicated the imbalance in the number of individuals that could be caused by selection pressures. These results suggest that sixteen months old abalones could be used as broodstocks for seed production in hatchery.
Extensive Metastatic Sarcomatoid Renal Cell Carcinoma Evaluated by 18F-FDG PET/CT: a Case Report and Review of Literature
Authors: Fuser Dominique , Hedberg Matthew L. , Dehner Louis P. , Dehdashti Farrokh , Siegel Barry A.
Published: January 2018

Sarcomatoid renal cell carcinoma (sRCC) is a highly aggressive form of dedifferentiated renal cell carcinoma. We report a 62-year-old man who presented with respiratory symptoms and a lung mass on chest computed tomography (CT). The patient underwent positron emission tomography/computed tomography (PET/CT) with 18F-fluorodeoxyglucose (18F-FDG) and was found to have extensive metastatic disease. Based on the history and imaging findings, there were possible primary malignancies, including bronchogenic carcinoma, melanoma, or an aggressive lymphoma. An excisional biopsy surprisingly revealed a high-grade sarcomatoid carcinoma with no evidence of differentiation, and immunohistochemical (IHC) studies showed that the tumor cells were positive for markers of genitourinary origin (PAX-8 and vimentin). The histologic and IHC results, along with multiple FDG-avid exophytic lesions in both kidneys, were considered diagnostic of sRCC. Here we have highlighted the potential role of 18F-FDG-PET-CT in patients with sRCC, discussed the diagnostic challenges, and presented a brief review.
Relação do comprometimento organizacional e da satisfação no trabalho de funcionários públicos municipais
Authors: Lizote Suzete Antonieta , Verdinelli Miguel Angel , Nascimento Sabrina do
Published: January 2018

Resumo A presente pesquisa teve como objetivo analisar a relação que existe entre o comprometimento organizacional e a satisfação no trabalho nos funcionários de prefeituras municipais. Em relação à plataforma teórica que abordou o comprometimento organizacional, utilizou-se o modelo de Meyer e Allen (1991), validado no Brasil por Medeiros e Enders (1998). E, ainda, para a satisfação no trabalho, empregou-se o constructo de Siqueira (1995, 2008). No desenvolvimento optou-se pela abordagem quantitativa, sendo os dados coletados com instrumentos de pesquisa derivados das escalas validadas para esses constructos. Os métodos usados na comparação de médias foram teste t e Anova, e para avaliar as relações, análise fatorial exploratória, confirmatória e modelagem em equações estruturais. As associações entre os constructos mostraram que o comprometimento na dimensão afetiva se relaciona significativamente com a satisfação. Do mesmo modo, mas com uma relação negativa, a dimensão normativa também se relaciona, indicando que os funcionários mais comprometidos normativamente são os que estão menos satisfeitos. Quanto à dimensão instrumental, não se verificou relacionamento com a satisfação. Os resultados obtidos evidenciaram que os funcionários municipais se sentem satisfeitos ao estarem afetivamente comprometidos e insatisfeitos se o seu comprometimento for apenas para cumprir as normas.
Análise do perfil da produção científica da Revista de Administração Pública (RAP) no período 2003-16
Authors: Smolski Felipe Micail da Silva , Dalcin Dionéia , Visentini Monize Sâmara , Bamberg Joice , Kern Juliana Strieder
Published: January 2018

Resumo Neste artigo efetuou-se uma investigação acerca das transformações dos trabalhos publicados na Revista de Administração Pública (RAP) no período de 2003 a 2016, por meio da pesquisa bibliométrica. Como resultados principais, observou-se a consolidação do campo, com aumento no número de autores por artigo onde a maioria deles são masculinos, mas com elevação na participação de pesquisadoras mulheres, em um contexto onde a maior parte dos autores é de brasileiros provenientes de instituições públicas. Incrementaram-se trabalhos do tipo estudo de caso, de abordagem aplicada e com metodologia quantitativa, em comparação a trabalhos publicados nos anos de 1994 a 2002.
Parâmetros ecocardiográficos em cães saudáveis tratados com acepromazina, meperidina e sua associação
Authors: Reis A.C. , Aptekmann K.P. , Egert L. , Andrade-Júnior P.S.C.
Published: January 2018

RESUMO Objetivou-se avaliar os efeitos da tranquilização com meperidina, acepromazina e de sua associação sobre os parâmetros ecocardiográficos em cães. Foram utilizados 12 cães adultos, da raça Rottweiler, submetidos ao exame ecocardiográfico sem utilização de sedação (controle - TC) e a três protocolos de tratamento, utilizando-se meperidina (TM), acepromazina (TA) e a associação dos medicamentos (TMA). As variáveis foram analisadas pelo teste de Tukey (P<0,05). Observou-se que as médias obtidas na onda A do fluxo mitral em TA e TMA diminuíram significativamente com relação ao TM, que não diferiu do TC. Houve uma diminuição significativa no valor de movimento anular mitral (MAM) e excursão sistólica do plano anular tricúspide (ESPAT) no TA. Não houve diferença significativa para os valores de fração de encurtamento (FE) entre TA e os demais tratamentos. Entretanto, observou-se que 57,3% dos cães apresentaram valores de FE abaixo da normalidade. As alterações encontradas podem ser decorrentes dos efeitos hipotensores da acepromazina utilizada de forma isolada. Conclui-se que a meperidina ou sua associação com acepromazina não alteram os parâmetros ecocardiográficos em cães saudáveis e que a acepromazina, utilizada isoladamente, causa alteração nos parâmetros de função sistólica dos cães, não sendo recomendada para a contenção química dos cães submetidos ao ecocardiograma, o que poderia levar à má interpretação do exame.
Desempenhos produtivo e reprodutivo de um rebanho F1 Holandês x Gir em Minas Gerais
Authors: Ribeiro L.S. , Goes T.J.F. , Torres Filho R.A. , Araújo C.V. , Reis R.B. , Saturnino H.M.
Published: January 2018

RESUMO Objetivou-se avaliar os desempenhos produtivo e reprodutivo de vacas F1 Holandês x Gir Minas Gerais, as quais foram mantidas em sistema de produção a pasto no verão, com suplementação de concentrado, e, no inverno, alimentadas com cana-de-açúcar, polpa de citros e concentrado. As características avaliadas foram: idade ao primeiro parto, intervalo parto-primeiro serviço, período de serviço, intervalo de partos, permanência da matriz no rebanho, produção de leite total por lactação, duração da lactação, produção média diária, produções ajustadas a 280 dias e a 305 dias de lactação, produção de leite por intervalo de partos e curvas de lactação conforme ordem de partos, época de partos e período de serviço. A função gama incompleta foi utilizada para estimação dos parâmetros das curvas de lactação. As demais características foram analisadas utilizando-se modelos lineares mistos. O rebanho apresentou ótimo desempenho (6271,56kg de leite por lactação). As fêmeas F1 Holandês x Gir são boa alternativa para a produção de leite, desde que garantidas boas condições de manejo, alimentação do rebanho e utilização de matrizes oriundas de programas de cruzamento direcionados empregando-se critérios de melhoramento genético.
Outcome of adjuvant chemotherapy with lomustine, vinblastine and chlorambucil on management of canine mast cell tumour of high to intermediate risk
Authors: Horta R.S. , Lavalle G.E. , Costa M.P. , Moura L.L. , Marcinowska A. , Araújo R.B.
Published: January 2018

ABSTRACT In spite of the many available protocols, the use of chemotherapy for the management of canine mast cell tumours (MCT) remains empirical, and there is lack of criteria for the choice of protocol and definition of patients who may benefit from treatment. The objective of this study was to evaluate the outcome of dogs with MCT after adjuvant chemotherapy according to the risk of recurrence or metastasis proposed on the literature. This prospective study included 89 followed up dogs with prognosis assesment including clinical, histological, immunohistochemical and genetic features of canine MCT. Patients were grouped according to risk of recurrence and metastasis and recommended treatment with lomustine followed by chlorambucil if considered at high-risk, or vinblastine followed by chlorambucil if a patient was at intermediate risk. Outcome was defined by disease-free interval (DFI) and overall survival (OS) estimated by Kaplan-Meier curve. Adjuvant lomustine was useful for control of canine MCT of high-risk of recurrence or metastasis, but only when sequentially associated to chlorambucil with a DFI of 686 days and not reached OS. There was no difference in outcome in the intermediate-risk group despite choosen treatment. Patients at intermediate-to-low risk may not require adjuvant treatments, even in the absence of free surgical margins.
Epitheliotropic lymphoma with heart and kidney metastasis in a dog: case report
Authors: Araújo C.M.T.D. , Pacheco B.D. , Castro J.L.C. , Farias M.R. , Engracia Filho J.R.
Published: January 2018

ABSTRACT A female adult dog, with a four-month history of pain and intense pruritus, which eventually resulted in sudden death, was referred for necropsy. Postmortem examination showed thoracic and abdominal serum-sanguineous exudates, multifocal infiltrative renal masses, and similar tumors in the heart. Histopathology revealed midsize infiltrative neoplastic proliferation composed of round cells, sparse cytoplasm, and large hyperchromatic nuclei. Immunohistochemistry revealed CD3+ and CD20-immunoexpression. Histopathological and immunohistochemical findings confirmed the diagnosis of epitheliotropic lymphoma with cardiac and renal metastasis.
Escolas teóricas do processo de internacionalização: uma visão epistemológica
Authors: Costa Lúcia de Fátima Lúcio Gomes da , Añez Miguel Eduardo Moreno , Mol Anderson Luiz Rezende , Damasceno Thiago dos Santos Azevedo
Published: January 2018

Resumo A internacionalização como fenômeno organizacional em permanente evolução teórica e gerencial criou a oportunidade de construção desta investigação, cujo objetivo é analisar a evolução do conceito de internacionalização por meio das escolas econômicas e comportamentais que a abordam. É apresentada uma revisão da literatura sobre as escolas que desenvolveram estudos empíricos e que postulam modelos de análise sobre a forma de internacionalização das empresas no mundo e, por último, apresenta-se o conceito de born global, que se refere à evolução do fenômeno de internacionalização. Assim, demonstra-se a mudança de paradigma na forma de perceber o processo de internacionalização dos pontos de vista pragmáticos e teóricos.
La epistemología del poder en el management clásico/racionalista
Authors: Barrios Edgar Varela , Piedrahita Ernesto José
Published: January 2018

Resumen Este texto analiza los fundamentos epistemológicos del poder en el management clásico-racionalista, los describe con base en planteamientos de varios de sus principales exponentes-Barnard, Simon, Drucker, Crozier y Mintzberg- y, además, pone de relieve las racionalidades y los valores que sustentan este management, sobre todo, teniendo en cuenta que las reflexiones sobre el poder en relación con objetivos organizacionales han sido poco elaboradas por los teóricos del management, especialmente los norteamericanos. Para ello, se realiza la revisión de la corriente filosófica del vitalismo, cuyo pensador más influyente ha sido Vilfredo Pareto. El análisis sobre la racionalidad instrumental como base epistemológica del management estratégico permite mostrar cómo se establecen las interacciones entre lo humano y lo no humano y la presencia del arte, la técnica y la ciencia, incluyendo, en su etapa posterior, la cibernética social en términos de la oscilación equilibrio/desequilibrio social y organizacional. De esta manera, se observa que el discurso managerial supone unas formas de racionalidad humana y por ello construye sistemas de saberes que son transversales en una lógica técnico-instrumental. Más que el cuestionarse por las agudas asimetrías del poder organizacional, el management se ha encaminado a orientar y capacitar a los gerentes, empresas y organizaciones en el uso de tecnologías de dominación, bajo emblemas de autoridad funcional con apoyo del aparato comunicacional y, en un período reciente, en redes inter y transorganizacionales. Allí reside su fuerza y legitimidad, más que en su fundamentación en un plano explícitamente político.
Organizational strategy for the development of nurses' competences: possibilities of Continuing Education in Health
Authors: Mello Amanda de Lemos , Brito Lana Jocasta de Souza , Terra Marlene Gomes , Camelo Silvia Henriques
Published: January 2018

ABSTRACT Objective: To reflect on Continuing Education in Health as an organizational strategy for the development of nurses' competences. Methods: A theoretical-reflective study was performed, combining concepts from Continuing Education in Health, organizational strategy and professional competence, understood as key elements for the work of nurses in health services. Results: To understand how to live together, individuals need to have knowledge about others, their history and traditions. When "learning how to do", they acquire broader competence to deal with unexpected situations and to facilitate team work. With regard to "learning how to be", they are encouraged to acquire autonomy and discernment on behalf of the group. If the focus is on development rather than control, there is shared interest and an integrated and strategic model for nurses' competences to be improved. Conclusion: The development of competences in nurses is the basis for the Learning Paths as a possible operationalization of Continuing Education in Health.
Projetivismo dos valores em Nietzsche
Authors: Stellino Paolo
Published: January 2018

Resumo Este artigo tem por objetivo reivindicar o lugar da filosofia nietzschiana na tradição filosófica do projetivismo. Com efeito, como mostrarei, mesmo se Nietzsche é quase unanimemente ignorado nas obras dos especialistas nessa tradição, ele mantém, ao longo de seu desenvolvimento filosófico, uma posição que se pode com razão definir como “projetivista”.
Performance of bioretention experimental devices: contrasting laboratory and field scales through controlled experiments
Authors: Macedo Marina Batalini de , Lago César Ambrogi Ferreira do , Mendiondo Eduardo Mario , Souza Vladimir Caramori Borges de
Published: January 2018

ABSTRACT Studying the performance of LID devices on a laboratory scale has the advantage of flexible layouts, so that more factors can be tested. However, they do not always correspond to what happens on a real scale of application. This paper focuses on a comparative analysis between two bioretention experimental devices considering field and laboratory scales. Based on this comparison, our understanding can be enhanced to extrapolate the results. Flow rate and duration were used as the main equivalence parameters. However, these parameters were insufficient to ensure similarity in the results. We proposed to include control volume, an application rate and an equivalent net depth as new parameters. Further research should test the variation of these parameters.
Severity of gummy stem blight on melon in relation to cultivars, use of fungicides and growing season
Authors: Dalcin Mateus S , Tschoeke Paulo H , Aguiar Raimundo WS , Fidelis Rodrigo R , Didonet Julcemar , Santos Gil R
Published: January 2018

ABSTRACT The authors aimed to evaluate the resistance to gummy stem blight and the agronomic traits of the melon crop in the Southern Region of the State of Tocantins, Brazil, in two growing seasons, submitted or not to treatment with fungicides. Two experiments were carried out: dry season (experiment I), and rainy season (experiment II), respectively, comprising the periods from July to October 2013 and from March to May 2014. Six melon cultivars were used in each season. In the dry season: Eldorado 300, Hibrix, Dourado Amarelo, Louro, Gaúcho Redondo and Canarian; and in the rainy season: Eldorado 300, Hibrix, HF-4439, Louro, Gaúcho Redondo and Canarian. Treatments consisted of each cultivar and split plot with (WA) or without fungicides application (NA). All cultivars were susceptible to disease, considering that Gaúcho Redondo was the least susceptible in the dry season. The fungicide application decreased disease severity in the dry season, however the productivity of the crop in treatments without fungicide application were not compromised, due to the late onset of the disease, and ranged from 19.2 t/ha for Eldorado 300 up to 41.9 t/ha for Canarian. The total soluble solids showed average values of 12°Brix, except for cultivar Gaúcho Redondo, which showed brix value lower than commercial standards. During the rainy season, fungicide application did not protect the plants, which did not complete the cycle, resulting in the absence of marketable fruit production. The climatic characteristics observed in the rainy season, with high humidity, leaf wetness and high temperatures are favorable for the development of gummy stem blight in melon plants. Thus, in Tocantins, the dry season is characterized as the best time of year for cultivation, between April and September.
Agricultural residues as a substrate in the production of eggplant seedlings
Authors: Meneghelli Lorena AM , Monaco Paola AVL , Haddade Ismail R , Meneghelli Caroline M , Almeida Karoline M
Published: January 2018

ABSTRACT The objective of this study was to evaluate the growth variables of eggplants seedlings produced in substrates with different compositions in agricultural residues. The experiment was carried out in a completely randomized design, with five treatments and ten replicates, with the following treatments: T0= Bioplant commercial substrate (control); T1= 10% of moinha (dried residue of coffee beans) + 15% of coconut fiber + 5% of eggshell + 70% of commercial substrate; T2= 20% of moinha + 15% of coconut fiber + 5% of eggshell + 60% of commercial substrate; T3= 30% of moinha + 15% of coconut fiber + 5% of eggshell + 50% of commercial substrate; T4= 40% of moinha+ 15% of coconut fiber + 5% of eggshell + 40% of commercial substrate. The evaluated variables were electric conductivity of the substrate, number of leaves, plant height, stem diameter; and fresh and dry biomass of shoot, root, and of the whole plant. Growing doses of moinha provide increased electrical conductivity in substrate. The treatment groups containing increasing proportions of moinha in the substrate composition present the highest values of growth variables in relation to the commercial substrate. Except shoot, root and total dry biomass, the substrate with 10 and 20% of moinha have the highest values of analyzed variables in eggplant seedlings.
Morpho-agronomic characterization of sweet potato germplasm
Authors: Alves Rodrigo P , Blank Arie F , Oliveira Alisson Marcel S , Santana Aléa Dayane D , Pinto Vanderson S , Andrade Thiago M
Published: January 2018

ABSTRACT Sweet potato (Ipomoea batatas) spreads mainly by vegetative propagation, and therefore this vegetable may have duplicate accessions in germplasm banks. The authors aimed to characterize morpho-agronomically the sweet potato germplasm from the Active Germplasm Bank (AGB) of Universidade Federal de Sergipe (UFS).The experiment was carried out at the Research Farm “Campus Rural da UFS”. The experimental design was a randomized block design, testing 73 sweet potato accessions with two replicates and four plants per plot. Morpho-agronomic traits of aboveground part and roots were evaluated. We observed that the leaf lobe type, the number of lobes per leaf, shape of central lobe, and general leaf shape were traits which provided the most variability among the accessions. For damage caused by soil insects, 52 accessions showed tolerance. The accessions presented a range from 0.33 to 2.71 t/ha for dry mass of aboveground part and from 1.20 to 10.89 t/ha for the total productivity of the roots. The high phenotypic variability of this crop shows good prospect for breeding programs.
Determination of damaged leaf area and physiological responses of melon plants submitted to different infestation levels of Liriomyza sativae
Authors: Costa Ewerton M , Freitas Rômulo Magno O , Silva Paolo Augustus F , Araujo Elton Lucio
Published: January 2018

ABSTRACT The leafminer Liriomyza sativae (Diptera: Agromyzidae) is one of the main pests of melon crop (Cucumis melo) in the Brazilian semiarid. The aims of this study were to determine the damaged leaf area and assess the physiological responses of melon plants submitted to different levels of infestation per larvae of L. sativae. The study was carried out in a greenhouse, using plants of melon of the cultivar Iracema (yellow melon). The design utilized was completely randomized, with five treatments {control (no infestation in the leaves) and four infestation levels (1; 10; 20 and 30 larvae per leaf)} and 10 replications (melon plants). Initially we evaluated the physiological aspects: photosynthetic rate (µmol CO2/m2/s), stomatal conductance (mol H2O/m2/s) internal CO2 concentration (µmol CO2/m2) and leaf transpiration (mmol H2O/m2/s). After the measurements of physiological aspects, the evaluated leaves of each plant were cut close to the petiole and scanned individually with a measuring scale on the side, being the determination of the damaged leaf area performed with the aid of software for processing and analysis of images. The averages of damaged leaf area observed were of 1.2; 6.3; 19.6 and 40.8 cm2 for infestations of 1; 10; 20 and 30 larvae/leaf respectively. In relation to the physiological aspects, the rate of photosynthesis, stomatal conductance and transpiration significantly decreased with the increase of leafminer larvae per leaf. The internal CO2 concentration increased with the increase in the number of larvae per leaf.
Reciprocal Spatiotemporally Controlled Apoptosis Regulates Wolffian Duct Cloaca Fusion
Authors: Hoshi Masato , Reginensi Antoine , Joens Matthew S. , Fitzpatrick James A. J. , McNeill Helen , Jain Sanjay
Published: January 2018

The epithelial Wolffian duct (WD) inserts into the cloaca (primitive bladder) before metanephric kidney development, thereby establishing the initial plumbing for eventual joining of the ureters and bladder. Defects in this process cause common anomalies in the spectrum of congenital anomalies of the kidney and urinary tract (CAKUT). However, developmental, cellular, and molecular mechanisms of WD-cloaca fusion are poorly understood. Through systematic analysis of early WD tip development in mice, we discovered that a novel process of spatiotemporally regulated apoptosis in WD and cloaca was necessary for WD-cloaca fusion. Aberrant RET tyrosine kinase signaling through tyrosine (Y) 1062, to which PI3K- or ERK-activating proteins dock, or Y1015, to which PLCγdocks, has been shown to cause CAKUT-like defects. Cloacal apoptosis did not occur in RetY1062F mutants, in which WDs did not reach the cloaca, or in RetY1015F mutants, in which WD tips reached the cloaca but did not fuse. Moreover, inhibition of ERK or apoptosis prevented WD-cloaca fusion in cultures, and WD-specific genetic deletion of YAP attenuated cloacal apoptosis and WD-cloacal fusionin vivo. Thus, cloacal apoptosis requires direct contact and signals from the WD tip and is necessary for WD-cloacal fusion. These findings may explain the mechanisms of many CAKUT.