(Invited) Hydrophilic Direct Bonding of InP Onto SiO2/Si for Metalorganic Vapor Phase Epitaxy Regrowth Applications
Authors: Besancon Claire , Fournel Frank , Sanchez Loic , Vaissiere Nicolas , Dupré Cécilia , Baron Thierry , Decobert Jean 
Published: December 2020

MOVPE regrowth of III-V materials on a directly-bonded InP-SiO2/Si (InPoSi) membrane is of particular interest to transpose the III-V mature multi-regrowth technologies [1][2][3] from the InP substrate classical platform into the hybrid III-V on Si platform [4].

MOVPE requires high-temperature elevation, typically above 600°C. We have shown for the first time void formation in a directly bonded InPoSi membrane at high temperature (400°C) despite the use of a thick oxide at the bonding interface [5]. The demonstration of highly efficient outgassing trenches under high temperature annealing as well as MOVPE regrowth of a high-quality III-V heterostructure was obtained.

Subsequent improvements in the treatments of the bonded surfaces allowed to achieve MOVPE regrowth of high-quality III-V material without the use of any outgassing methods [6]. In particular, a compressive strain of 400 ppm at growth temperature was shown for the first time by curvature measurements carried out during growth. The latter is due to the difference of thermal coefficients between InP and Si [7]. Despite this thermal strain, a 3 μm-thick laser structure was successfully grown on InPoSi and compared to the same structure on InP as a reference [8]. Device performance are similar for both structures showing that there is no penalty induced by regrowing μm-thick structures onto InPoSi in spite of the thermal strain.

References

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