Performance Analysis of Gate Engineered High-K Gate Oxide Stack SOI
Fin-FET for 5 nm Technology
Authors: Lorenzo Rohit , Vijaya Pidaparthy 
Published: December 2022

This paper analyses the performance of 5 nm gate length gate engineered oxide stack silicon on
insulator (SOI) fin field-effect transistor (OS-Fin-FET) for the first time. The high dielectric (High-K)
value of the material-based gate oxide stack structure increases both the analog and the radio frequency
(RF) performance of the Fin-FET device when compared to standard single gate oxide material structures.
The work function of the engineered gate structure further helps in advancing the performance of the
device in terms of on current (Ion), off current (Ioff) and the ratio of Ion/Ioff. The proposed OS-FinFET
device improves on current (Ion) of the device by 12% in comparison to the high-K dielectric gate oxidebased
FinFET device. Simulation of the device is further extended to study different electrical characteristics
of the proposed device under other biasing conditions, to estimate enhanced analog and RF performance
where the device is highly suitable for low power and high-speed applications. Overall, the proposed
device shows improvement in existing architectures of the devices. Technology computer-aided
design (TCAD) tool is used to perform entire simulations of the proposed device with 5 nm gate length.

Aim:

To enhance analog and RF performance of the Fin-FET device at 5 nm gate length.

Background:

Design of the sub-10 nm Fin-FET device undergoes charge shearing phenomena because of
the minimum distance between source and drain. This problem is addressed by using High-K spacer over
substrate but it leads to increase in the channel resistance and adverse short channel effects. A combination
of different high-K dielectric materials can eliminate this performance. Hence most of the studies
concentrated on spacer region and failed to consider channel region. This study tries to improve analog
performance of the device using the approach of gate engineering with gate stack approach.

Objective:

The main objective of this study is to increase on current (Ion) of the device by implementing
gate engineering approach, by choosing dual work function-based gate with oxide stack approach. The
High-K dielectric material-based gate oxide reduces leakage current, decreases off current which will
increase the ratio of Ion/Ioff.

Methods:

The dual work function gate material is taken with gate oxide stack approach by considering
different High-K dielectric materials like HfO2, TiO2 with thin SiO2 layer as the interactive layer. Simulation
of the device is carried out using TCAD Tool and results are compared with existing literature, to
validate the results.

Results:

The proposed architecture of the Fin-FET device delivers excellent results in terms of on current
and subthreshold characteristics compared to existing literature. The proposed device gives high on current
of 0.027 A and current ratio of 1.08X104.

Conclusion:

A complete comparative analysis is carried out with existing literature on the proposed device,
where the proposed device resulted in high performance. The proposed device improves 12% compared
to existing literature, which is highly suitable for low power applications.