bluuebunny/crossref_metadata_2025 huggingface dataset:
Prostaglandin D2 effects and DP1/DP2 receptor distribution in guinea pig urinary bladder out‐flow region
Authors: Guan Na N. , Svennersten Karl , de Verdier Petra J. , Wiklund N. Peter , Gustafsson Lars E.
Published: September 2016

The proximal urethra and urinary bladder trigone play important roles in continence. We have previously shown that PGD2 is released from guinea pig bladder urothelium/suburothelium and can inhibit detrusor contractile responses. We presently wished to investigate PGD2 actions in guinea pig out‐flow region and the distribution of DP1/DP2 receptors. The effects of PGD2 on urothelium‐intact trigone and proximal urethra contractility were studied in organ bath experiments. Expression of DP1/DP2 receptor proteins was analysed by western blot. Immunohistochemistry was used to identify distribution of DP1/DP2 receptors. PGD2 in a dose‐dependent manner inhibited trigone contractions induced by electrical field stimulation (EFS) and inhibited spontaneous contractions of the proximal urethra. PGD2 was equally (trigone) or slightly less potent (urethra) compared with PGE2. Expression of DP1 and DP2 receptors was found in male guinea pig bladder trigone, neck and proximal urethra. In the trigone and proximal urethra, DP1 receptors were found on the membrane of smooth muscle cells and weak immunoreactivty was observed in the urothelium. DP2 receptors were distributed more widespread, weakly and evenly in the urothelium and smooth muscles. Inhibitory effects by PGD2 on motor activity of guinea pig trigone and proximal urethra are consistent with finding DP1 and DP2 receptors located in the urothelium and smooth muscle cells of the trigone and proximal urethra, and PGD2 may therefore be a modulator of the bladder out‐flow region, possibly having a function in regulation of micturition and a role in overactive bladder syndrome.
Role of EhRab7A in phagocytosis of type 1 fimbriated E. coli by Entamoeba histolytica
Authors: Verma Kuldeep , Nozaki Tomoyoshi , Datta Sunando
Published: September 2016

Entamoeba histolytica, the causative agent of amoebic colitis and liver abscess in human, ingests the intestinal bacteria and variety of host cells. Phagocytosis of bacteria by the amebic trophozoite has been reported to be important for the virulence of the parasite. Here, we set out to characterize different stages of phagocytosis of type 1 E. coli and investigated the role of a set of amoebic Rab GTPases in the process. The localizations of the Rab GTPases during different stages of the phagocytosis were investigated using laser scanning confocal microscopy and their functional relevance were determined using fluorescence activated cell sorter based assay as well as colony forming unit assay. Our results demonstrate that EhRab7A is localized on the phagosomes and involved in both early and late stages of type 1 E. coli phagocytosis. We further showed that the E. coli or RBC containing phagosomes are distinct from the large endocytic vacuoles in the parasite which are exclusively used to transport human holotransferrin and low density lipoprotein. Remarkably, type 1 E. coli uptake was found to be insensitive to cytochalasin D treatment, suggesting that the initial stage of E. coli phagocytosis is independent of the formation of actin filaments.
High‐flow nasal cannula therapy and apnea time in laryngeal surgery
Authors: Riva Thomas , Seiler Stefan , Stucki Franziska , Greif Robert , Theiler Lorenz
Published: September 2016

In small children, high‐flow nasal cannula therapy may prolong apnea time even when an inspiratory oxygen fraction below 100% is used. This will be beneficial in prolonged intubation attempts, but especially during procedures requiring prolonged apnea time, leading to fewer airway manipulations and markedly enhanced surgical conditions.
Comparative Human Health Impact Assessment of Engineered Nanomaterials in the Framework of Life Cycle Assessment
Authors: Fransman Wouter , Buist Harrie , Kuijpers Eelco , Walser Tobias , Meyer David , Zondervan‐van den Beuken Esther , Westerhout Joost , Klein Entink Rinke H. , Brouwer Derk H.
Published: September 2016

For safe innovation, knowledge on potential human health impacts is essential. Ideally, these impacts are considered within a larger life‐cycle‐based context to support sustainable development of new applications and products. A methodological framework that accounts for human health impacts caused by inhalation of engineered nanomaterials (ENMs) in an indoor air environment has been previously developed. The objectives of this study are as follows: (i) evaluate the feasibility of applying the CF framework for NP exposure in the workplace based on currently available data; and (ii) supplement any resulting knowledge gaps with methods and data from the life cycle approach and human risk assessment (LICARA) project to develop a modified case‐specific version of the framework that will enable near‐term inclusion of NP human health impacts in life cycle assessment (LCA) using a case study involving nanoscale titanium dioxide (nanoTiO2). The intent is to enhance typical LCA with elements of regulatory risk assessment, including its more detailed measure of uncertainty. The proof‐of‐principle demonstration of the framework highlighted the lack of available data for both the workplace emissions and human health effects of ENMs that is needed to calculate generalizable characterization factors using common human health impact assessment practices in LCA. The alternative approach of using intake fractions derived from workplace air concentration measurements and effect factors based on best‐available toxicity data supported the current case‐by‐case approach for assessing the human health life cycle impacts of ENMs. Ultimately, the proposed framework and calculations demonstrate the potential utility of integrating elements of risk assessment with LCA for ENMs once the data are available.
Pre‐mRNA splicing repression triggers abiotic stress signaling in plants
Authors: Ling Yu , Alshareef Sahar , Butt Haroon , Lozano‐Juste Jorge , Li Lixin , Galal Aya A. , Moustafa Ahmed , Momin Afaque A. , Tashkandi Manal , Richardson Dale N. , Fujii Hiroaki , Arold Stefan , Rodriguez Pedro L. , Duque Paula , Mahfouz Magdy M.
Published: September 2016

Alternative splicing (AS) of precursor RNAs enhances transcriptome plasticity and proteome diversity in response to diverse growth and stress cues. Recent work has shown that AS is pervasive across plant species, with more than 60% of intron‐containing genes producing different isoforms. Mammalian cell‐based assays have discovered various inhibitors of AS. Here, we show that the macrolide pladienolide B (PB) inhibits constitutive splicing and AS in plants. Also, our RNA sequencing (RNA‐seq) data revealed that PB mimics abiotic stress signals including salt, drought and abscisic acid (ABA). PB activates the abiotic stress‐ and ABA‐responsive reporters RD29A::LUC and MAPKKK18::uidA in Arabidopsis thaliana and mimics the effects of ABA on stomatal aperture. Genome‐wide analysis of AS by RNA‐seq revealed that PB perturbs the splicing machinery and leads to a striking increase in intron retention and a reduction in other forms of AS. Interestingly, PB treatment activates the ABA signaling pathway by inhibiting the splicing of clade A PP2C phosphatases while still maintaining to some extent the splicing of ABA‐activated SnRK2 kinases. Taken together, our data establish PB as an inhibitor and modulator of splicing and a mimic of abiotic stress signals in plants. Thus, PB reveals the molecular underpinnings of the interplay between stress responses, ABA signaling and post‐transcriptional regulation in plants.
Belousov-Zhabotinsky autonomic hydrogel composites: Regulating waves via asymmetry
Authors: Buskohl Philip R. , Vaia Richard A.
Published: September 2016

Embedment asymmetry can program oxidation wave behavior in composite, chemomechanical-coupled gels.
Mechanical assembly of complex, 3D mesostructures from releasable multilayers of advanced materials
Authors: Yan Zheng , Zhang Fan , Liu Fei , Han Mengdi , Ou Dapeng , Liu Yuhao , Lin Qing , Guo Xuelin , Fu Haoran , Xie Zhaoqian , Gao Mingye , Huang Yuming , Kim JungHwan , Qiu Yitao , Nan Kewang , Kim Jeonghyun , Gutruf Philipp , Luo Hongying , Zhao An , Hwang Keh-Chih , Huang Yonggang , Zhang Yihui , Rogers John A.
Published: September 2016

Buckling-driven assembly of 3D mesostructures from releasable multilayers offers versatile design options for unique applications.
Republished: Traumatic basilar artery entrapment with patency of pontine perforators and absence of significant brainstem infarction: report of an unusual case
Authors: Kliesch Stefan , Bauknecht Christian , Bohner Georg , Liebig Thomas , Siebert Eberhard
Published: September 2016

We report a rare case of entrapment of the basilar artery into the sphenoid bone caused by a longitudinal fracture of the clivus. Using high resolution three-dimensional flat panel angiography, we show preservation of the basilar artery perforators in spite of severe stenosis of the entrapped segment of the basilar artery. There were no obvious signs and symptoms of posterior fossa stroke clinically or radiographically as far as could be assessed under given clinical circumstances.
Chemical Sculpturing of Al Micro-Particles for Polymer Composites and Universal Polymer-Polymer Joints
Authors: Baytekin-Gerngross Melike , Gerngross Mark-Daniel , Carstensen Jürgen , Adelung Rainer
Published: September 2016

This paper presents a practical method to produce Al micro-particles via anisotropic wet chemical etching with a particle surface structure perfectly suited for mechanical interlocking with polymers. This particle surface structure consists of a multitude of cuboid features forming step-like structures with hooks forming tight connections to various polymers. These composites formed from these sculptured Al micro-particles and medical-grade PDMS show a drastically increased Young’s modulus as well as a 34% increased ultimate tensile strength compared to the pure PDMS. Additionally, the tight, adhesive-free joining of immiscible polymers via these sculptured Al micro-particles is presented exemplarily for POM/ EVA and POM/ LDPE.
Pitting Corrosion of Copper Tubes for Drinking Water Applications Due to Silicate Films
Authors: Feser Ralf , Schewe Sven
Published: September 2016

The appearance of silicate films at the metal surface has been detected. Measurements with the Scanning Kelvin Probe and Scanning Vibrating Electrode do show the existence of local anodes under artificially prepared silicate films on copper. The anode is surrounded by the cathode formed by the free copper surface and also by a cathodic area represented by the complete silicate covered copper surface. Galvanostatic investigations do show that the mechanism of copper dissolution is changed. The formation of Cu2+ -ions is hindered, only Cu+ ions can be formed under thick silicate films. The existence of the silicate film hinders the formation of a protective oxide film. The copper dissolution is higher than without a silicate film. This is the first time that the mechanism of pitting corrosion of copper in cold water due to the formation of silicate films has been proofed.
Development and Optimization of Thin-Film Technology Based Micro Inductors and Transformers
Authors: Beringer Sebastian , Dinulovic Dragan , Haug Martin , Rissing Lutz , Wurz Marc Christopher
Published: September 2016

The paper presents an overview of the development and the optimization of a thin-film micro-transformer built on a silicon wafer. Here, the solenoid-core micro-transformer is fabricated by means of thin-film technologies. The main impetus of further research is driven by optimization of electrical and magnetic properties. The micro-transformer is designed for high frequency applications in the 15 to 30 MHz range. The energy transformation efficiency in the aforementioned switching frequency range is approximately 80 %.
Structuring Methods of Plastic Substrates for Electroplating Applications
Authors: Bengsch Sebastian , Rechel Mathias , Asadi Esmail , Wurz Marc Christopher
Published: September 2016

New approaches of packaging of integrated circuits show the need of flexible and cheap materials. Polymers offer possibilities regarding the flexibility and mass production opportunities in terms of roll to roll production for foil technology based substrates, as well the use of injection molding for more complex three-dimensional housings, circuits, electronics and even sensor actor arrays (2,3,4,5). A new manufacturing strategy to produce pre-structured wafer substrates which can be used for electroplating processes without the need of photolithography is developed. Important process steps are injection molding, sputter deposition, electroplating, chemical mechanical polishing and micro end milling. These manufacturing processes are not in the need of clean room technology and abstain from any lithography processes. Therefore this idea can be interesting for low cost production systems which exclude expensive clean room technology and expensive substrate materials without functionalized properties
Development of Silicon Substrate for Advanced Multi-Chip Packaging Process with the Enhanced Gettering Ability
Authors: An Jeong-Hoon , Kim Jang-Seop , Lee Anselmo Jaehyeong , Park Hyung-Kook , Park Hyeung-il , Moon Byeong-Sam , Lee Sang- Hyun , Park Jea-Gun
Published: September 2016

A novel concept of MCP substrates that shows the enhanced internal gettering ability even in thinned state was proposed. To achieve the concept, RTA treatment in high temperature was applied to the CZ-Si substrate with a high initial oxygen concentration. It was confirmed that precipitates were formed as high density even in the near surface shallower than 100 μm, where major portion of internal gettering should take place in the MCP process. Moreover, comparable gettering ability to the EPI wafer was confirmed in our concept after thinning, especially in Ni gettering. In conclusion, it was expected that this concept is one of the possible substitutions of EPI wafers in practical MCP process.
(Invited) Application of DFT Calculation for the Development of High Quality Si and Ge Substrates: From Ultra Large Diameter Crystal Pulling to Metal Gettering
Authors: Sueoka Koji
Published: September 2016

Due to the maturing of density functional theory (DFT) calculation techniques and the increase of computing power, considerable progress has been made in the application of DFT calculation for the development of high quality silicon (Si) and germanium (Ge) substrates. In this paper, an overview is given on the useful application of DFT calculations for the control and engineering of intrinsic point defects in Si and Ge single crystal growth from a melt and the metal gettering in Si wafers.
(Invited) Multiscale Modeling of Stress-Mediated Compositional Patterning in SiGe Substrates
Authors: Kaiser Daniel , Ghosh Swapnadip , Han Sang , Sinno Talid
Published: September 2016

The ability to scalably fabricate periodic, large-area assemblies of Ge quantum dots on Si or SiGe substrates with high degree of spatial and size uniformity is expected to impact numerous technologies, including optoelectronics and high-density patterned media for data storage. Here, we demonstrate experimentally and study computationally a process in which SiGe substrates are compositionally patterned over large areas using spatially-modulated elastic fields applied by a nano-indenter array. The indenter array is pressed against a SiGe wafer and annealed at high temperatures during which the larger Ge atoms are selectively driven away from areas of compressive stress. To study parametrically the stress patterning process, we develop a computer model that describes atomic diffusion in SiGe as a function of temperature, composition, and stress. The model is used to investigate the impact of various parameters such as indenter shape and size on the compositional distribution.
Nano Crystals to Micro Crystals: Organolead Triiodide Perovskite Crystal Growth from Isopropanol Solution
Authors: Johansson Malin Birgitta , Edvinsson Tomas , Bitter Stefan , Eriksson Anna I. K. , Johansson Erik M. J. , Göthelid Mats , Boschloo Gerrit
Published: September 2016

The growth mechanism and dependence on precursor conditions are vital for creation of high quality crystalline materials in many fields. Here the growth from nano sized quantum dots to micro crystalline methyl ammonium lead tri-iodide (MAPbI3) perovskites prepared from isopropanol solution are reported. Isopropanol is more environmental friendly compared to the commonly used solvents DMF or DMSO, both with relatively high toxicity and the proposed method can be a useful new route to prepare hybrid perovskites. Three different molar ratio of MAPbI3 perovskite solution (MAI:PbI2 of 1:1, 2:1 and 0.5:1) was performed to give insights in the crystal formation mechanism also under non-stoichiometric conditions. Perovskite crystal growth is followed by TEM. From XRD powder diffraction the lattice constants has been determined and compared with results from electron diffraction (ED). Interestingly, there seems to be an occurrence of the cubic phase besides the common tetragonal phase at room temperature.
High Electron and Hole Mobility by Localized Tensile & Compressive Strain Formation Using Ion Implantation and Advanced Annealing of Group IV Materials (Si+C, Si+Ge & Ge+Sn)
Authors: Borland John O
Published: September 2016

This paper will review strain-Si and strain-Ge formation by ion implantation and advanced annealing to form localized tensile and compressive strain channel for improved electron and hole mobility in Group IV materials. Carbon implant was used to reduce the surface Si lattice constant forming Si+C material for localized compressive strain-Si channel. Ge implant was used to increase the surface Si lattice constant forming Si+Ge material for localized tensile strain-Si channel and Sn implant to increase the surface Ge lattice constant forming Ge+Sn material for localized tensile strain-Ge channel. Use of ion implant and advanced annealing for strain formation resulted in tensile strain-Si+Ge improving hole mobility by 4x and electron mobility by 1.5x while tensile strain-Ge+Sn improved electron mobility by 2-2.5x.
Nonvolatile Memory Characteristics of CdS Embedded Zr-Doped HfO2 High-k
Dielectric MOS Capacitors
Authors: Zhang Shumao , Kuo Yue
Published: September 2016

Nonvolatile memory device characteristics of the MOS capacitor containing the CdS embedded ZrHfO high-k gate dielectric layer have been investigated. The embedded CdS layer suppressed the growth of the high-k/Si interface layer and generated a large amount of charge trapping sites. The device preferred to trap holes under the negative voltage stress condition than electrons under the positive stress condition. The hole trapping density increased with the increase of stress time. The current density-voltage curve results confirmed the hole trapping mechanism and the quick release of shallow trapped holes upon the release of the stress voltage. More than 48% of the originally trapped charges remained in the devices after 10 years. The CdS embedded ZrHfO gate dielectric is a suitable structure for nonvolatile memories.
(Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices
Authors: Valov Ilia , Luebben Michael , Wedig Anja , Waser Rainer
Published: September 2016

Redox-based resistive switching memories (ReRAM) developed rapidly as most promising candidates for new type non-volatile memory devices fulfilling the demands for green IT i.e. low power consumption, high operation speed and integration density, scalability and reliability. Recent achievements have clearly demonstrated the diversity of applications these devices can be used for – neuromorphics, computing and logic operations, selector elements. All these developments are supported by system functionalities having their origin in the electrochemical nature of the ReRAM cells. In this review the newest achievements in the microscopic understandings of the processes in ReRAMs are discussed. It is shown that both cations and anions (and even noble metal ions) are mobile and can contribute to the resistive switching. The effects of moisture and their importance for both ECM and VCM ReRAMs will be discussed. The influence of different electrode materials in terms of electrocatalytic activity and passivation behavior will be highlighted.
Charge Transport Mechanism of Stress Induced Leakage Current in Thermal Silicon Oxide
Authors: Islamov Damir R. , Gritsenko Vladimir A. , Perevalov Timofey V. , Orlov Oleg M. , Krasnikov Gennady Ja.
Published: September 2016

The charge transport mechanism of electron via traps in thermal SiO2 has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and optical trap energies are W
t = 1.6 eV and W
opt = 3.2 eV, respectively. Charge flowing leads to oxygen vacancies generation, and the leakage current increases. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. Taking into account results of ab initio simulations we found that the oxygen vacancies act as electron traps in SiO2.
(Invited) Generation-Recombination Noise in Advanced CMOS Devices
Authors: Simoen Eddy , Oliveira Alberto Vinícius de , Boudier Dimitri , Mitard Jerome , Witters Liesbeth , Veloso Anabela , Agopian Paula Ghedini Der , Martino Joao Antonio , Carin Regis , Cretu Bogdan , Langer Robert , Collaert Nadine , Thean Aaron , Claeys Cor
Published: September 2016

This paper gives an overview of the occurrence of Generation-Recombination (GR) noise in advanced submicron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). GR noise corresponds with a Lorentzian spectrum, characterized by a plateau amplitude and a corner frequency. Studying the gate voltage dependence of these parameters enables to distinguish trap centers in the depletion region of the semiconductor or in the gate dielectric. In the latter case, single defects are at the origin of the Lorentzian spectrum, which usually give rise to two-level fluctuations in the time domain, also called Random Telegraph Signals (RTSs). Here, it will be outlined how information regarding the energy level (ET), the trap concentration (NT) or the trap position can be extracted from studying the GR noise as a function of temperature or gate voltage.
An Insightful Review of Galvanic Formations and Dynamic Interactions in Selectively Corroding Silicon Surfaces during Wafer Manufacturing
Authors: Sheng Lieyi
Published: September 2016

This insightful review summarizes a number of unique electrochemical features in selectively corroding silicon surfaces and their significant impacts on interfacial quality and dielectric reliability. These insights are critical to quickly identify and solve the hidden or intricate galvanic occurrences in highly dynamic and variable environments of wafer manufacturing.
Broadband Spectroscopic Characterization of Hybrid Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications
Authors: Obeng Yaw S. , Okoro Chukwudi A. , Montgomery Karl R. , Amoah Papa K. , You Lin , Kopanski Joseph J. , Obrzut Jan
Published: September 2016

In this paper, we discuss the use of broadband microwaves (MW) (up to 20 GHz) to characterize organic and hybrid silicon-organic thin films meant for insulation applications in micro- and nanoelectronic devices. Specifically, we will take advantage of MW propagation characteristics, to extract and examine the relationships between electrical and mechanical properties, and the chemistry of prototypical materials. The impact of moisture on the electrical behavior of any material defects will be evaluated from the impact of thermal anneal at modest temperatures on the samples. These studies will shed light on the chemical changes that occur within the dielectric films that could impact the performance and reliability, as well as provide basis for rational selection of organic dielectrics for integrated devices.
(Invited) Silicon Emission Mechanism for Oxidation Process of Non-Planar Silicon
Authors: Kageshima Hiroyuki , Shiraishi Kenji , Endoh Tetsuo
Published: September 2016

The advance in the understanding of the mechanism of the silicon oxidation process toward the fine control of 3D MOSFETs is explained. The silicon emission mechanism can be applied to the oxidation process of silicon pillars as well as that of planar silicon. Since the geometrical effect is inevitable for the 3D MOSFETs, the silicon emission mechanism is the key to achieve high-performance non-planar 3D MOSFETs.
Electronic Structure of Oxygen Deficient Noncentrosymmetric Orthorhombic Hf0.5Zr0.5O2
Authors: Perevalov Timofey V. , Islamov Damir R. , Gritsenko Vladimir A. , Saraev Andrey A.
Published: September 2016

The electronic structure of oxygen vacancies in noncentrosymmetric orthorhombic Hf0.5Zr0.5O2 was investigated with quantum chemical density functional theory simulations. The oxygen vacancies with different coordination in five charged states were investigated. The single electron levels of charged states is located in the band gap, as well as the values of trap thermal and optical ionization energies, indicate that any type of oxygen vacancies can capture both electrons and holes, i.e. they can act as an amphoteric localization center (trap) for charge carriers. The vacancy levels position in the band gap for an added electron is in excellent agreement with the experimental trap thermal ionization energy 1.25 eV for the amorphous Hf0.5Zr0.5O2 film. X-ray photoelectron spectroscopy revealed that high oxygen vacancies concentration generation by the Ar+ etching method is not appropriate for o-Hf0.5Zr0.5O2.
Selected Success Stories from Twenty Years of High-k Gate Dielectric Research
Authors: Kar Samares
Published: September 2016

This paper is a critical evaluation of six selected success stories from twenty years (1996-2016) of high-k gate dielectric research. The six success stories have been selected on the basis of their importance to MOSFET technology and the physical insight these research results have provided. The selected success stories are: (1) the realization that a quality direct interface between silicon (covalent) and high-k layer (ionic) is not possible because of bonding and coordination mismatch; hence an intermediate covalent transition layer (SiO2 or SION) is necessary to ensure a quality Si-SiO2 interface; (2) atomic layer deposition of Hf-based high-k gate dielectric; (3) realization of thermodynamically stable high-k gate stack; (4) confirmation of interface dipole at the SiO2/HfO2 interface and its technological use in controlling threshold voltage by a cap layer; (5) increase of high-k layer permittivity by phase modifiers; (6) passivation of the Ge surface and realization of Ge PMOSFET and NMOSFET with high channel mobility.
Electrical Properties of Al2O3 Incorporated CeO2 Thin Films Deposited by RF Magnetron Sputtering
Authors: Konishi Junya , Ohsawa Takashi , Suzuki Setsu , Ishibashi Keiji , Ri Sung-Gi , Takahashi Kenichiro , Yamamoto Yasuhiro
Published: September 2016

The Al2O3 incorporated CeO2 thin films (Al2O3 molar fraction of 0.0 to 0.6) were prepared by the RF magnetron sputtering with the combinatorial mask system using the two targets of Al2O3 and CeO2 in Ar + 10% O2. The deposited films were annealed in N2 and O2 at 500°C for 30 minutes. The minimum leakage current density of 1.6 x 10-8 A/cm2 measured at the electric field of 1MV/cm was obtained for the N2 annealed sample with the Al2O3 incorporation of 0.2, which value was significantly lower than that of the film without the Al2O3 incorporation by two orders of magnitude. The variation of the flat band voltage with the incorporated Al2O3 molar fraction suggested the generation of the fixed positive charge, which was probably arisen from the lower Ce oxide in the film and/or the lower oxide of Si diffused from the substrate into the film.
Unidirectional Oxide Hetero-Interface Thin-Film Diode with Improved Electrical Current
Authors: Nam Buil , Chung Sung Yun , You Duck-Jae , Kim Youn Sang
Published: September 2016

In this paper, we propose new structure of unidirectional oxide hetero-interface thin-film diode for enhanced on-current density with low operating voltage by inserting ultrathin insulator layer. It is figured out that the governing mechanism of thin film diode transfers from the space-charge-limited-conduction (SCLC) model to Fowler–Nordheim tunneling (FNT) model depending on the insulator thickness of below 10 nm. The current density of the ultrathin insulator film (3 nm thick) diode is 104 times higher than the diode with 30 nm thick insulator. Consequently, the simple engineering of insulator layer thickness enables to reach the high current density and low operating voltage. Furthermore, the ultrathin insulator film diode has strong potential for nano-scale applications such as resistive-random-access-memory (ReRAM) selectors and micro-electro-mechanical-systems (MEMS).
(Invited) Control of Internal Plasma Parameters Toward Atomic Level Processing
Authors: Sekine Makoto , Tsutsumi T , Fukunaga Y , Takeda K , Kondo H , Ishikawa K , Hori M
Published: September 2016

Plasma processes have been indispensable core technologies to manufacture ultra-large scale integrated circuits and variety of devices. To develop the next generation devices, advancing of the plasma processes should be needed. Towards the surface processing with atomic level accuracy with low damage, the precise control of internal parameters that actually define the surface reaction has become more important. We have developed an autonomous plasma manufacturing system, which measures the densities of some atomic species with a compact monitoring system and controls them at optimum values in real time. The spatiotemporal fluctuation of species in the plasma affects much on the surface reactions, which is fatal to fabricate nano-size, atomic level structures. Then, we can make nano-scale etching with an ultrahigh precision by employing the autonomous plasma system.
Fabrication of p-Type La: Fe2O3 as Photocathode Via Atomic Layer Deposition
Authors: Peng Qi , Du Chun , Wen Yanwei , Shan Bin , Chen Rong
Published: September 2016

P-type La: Fe2O3 and the n-p junction of Fe2O3/La: Fe2O3 have been fabricated by ALD technique for its excellent conformability and controllable film growth with low defect densities. La: Fe2O3 film is demonstrated with p-type characteristics by Mott−Schottky plots and the hole concentration is calculated ~ 1.97 × 1015 cm-3. It also obtains a cathodic photocurrent ~28 μA/cm2 at -0.8 V vs. Ag/AgCl. When forming the n-p junction of Fe2O3/La: Fe2O3, it is found that the onset potentialexhibits a negative shift of ~150 mV and the photocurrent densities increases from 0.62 mA/cm2 to 1.31 mA/cm2 at 0.5 V vs. Ag/AgCl. Generally, the incident photon-to-current conversion efficiency (IPCE) of Fe2O3/La: Fe2O3
n-p junction reaches ~4.47% at 400 nm. Our results imply that it is desirable to tune the energy mismatch between water splitting potentials and the band edges of Fe2O3 by a facile surface modification by forming a solid n-p junction.
On the Growth, Percolation and Wetting of Silver Thin Films Grown by Atmospheric-Plasma Enhanced Spatial Atomic Layer Deposition
Authors: Mameli Alfredo , van den Bruele Fieke , Ande Chaitanya Krishna , Verheijen Marcel A. , Kessels W.M.M. , Roozeboom Fred
Published: September 2016

In this work we studied the deposition of silver (Ag) by spatial-ALD on molybdenum layers serving as a growth model substrate. Mo-layers were selected for testing the suitability of spatial-ALD in fabricating MoO3/Ag/MoO3 tri-layer transparent conductor (TC) stacks used for light-management optimization in organic-based and perovskites solar cells. The presence of native MoO3 on the Mo surface was found to hinder the Ag coalescence. Therefore, an H2/N2 plasma pre-treatment was introduced before Ag deposition in order to reduce the native MoO3. It was concluded that this plasma pre-treatment was effective in promoting Ag wetting, as corroborated by scanning electron microscopy and ellipsometry measurements. Wetting/de-wetting properties as probed by rapid thermal annealing experiments and comparable XRD stress amplitude measurements supported the conclusion that, plasma pre-treatment ALD deposited MoO3 layers can act as wetting layers for subsequent Ag spatial-ALD. This can open up alternative pathways for the fabrication of TCs using ALD.
Depicting the Electronic Structure of HfO2 Films by Spectroscopic Techniques
Authors: Corrêa Silma Alberton , Brizzi Simone , Schmeisser Dieter
Published: September 2016

The electronic structure of HfO2 films was investigated. The partial density of states for the valence and the conduction bands was determined by the detailed analysis of the O1s resonance profile by resonant photoelectron spectroscopy. The positions of valence band maximum and conduction band minimum, the excitation range for the polaronic states and the range of charge transfer band were found to be not influenced by the preparation conditions. The band gap was determined to be 6.2 eV and the energy of the charge neutrality level (referred to vacuum level) was determined as 4.7 eV. The Fermi level position was observed to vary about 1.2 eV depending on the preparation conditions, which indicates the presence of charges within the films.
Determination of Atomic-Layer-Deposited Multilayer Antireflection Coating Parameters Using a Novel X-Ray Reflectivity Approach
Authors: Li Chao , Shahriarian Firouz , Goorsky Mark S.
Published: September 2016

Atomic-layer-deposited Al2O3/TiO2/Al2O3 multilayer antireflection stacks used for broadband antireflection coatings were characterized by a novel combination of an X-ray reflectivity layer thickness extraction algorithm and X-ray reflectivity simulations, together with spectroscopic ellipsometry, broadband optical reflectance, glancing incidence X-ray diffraction, transmission electron microscope and energy dispersive X-ray spectroscopy. Layer thicknesses and surface and interface roughnesses or grading with a few angstroms’ precision, and densities with less than one percent uncertainty were assessed. These parameters are key to understanding the role of deposition and processing conditions on the performance of broadband antireflection coatings. Additionally, the effect of air annealing at 400 °Ϲ for 10 min on the structural and optical properties of multilayer Al2O3/TiO2/Al2O3 antireflection coating was revealed with these techniques.
Invar Electroplating for Controlled Expansion Interconnects
Authors: Dubin Val M , Lisunova Milana O , Kovalenko Igor O , Walton Barbara L , Downey Gillian , Su Jonathan , Witt Kevin
Published: September 2016

NANO3D SYSTEMS (“NANO3D”) has developed an electroplating technique to produce uniform, low-internal-stress and controlled-expansion nickel iron alloy (36 % of Nickel and 64% of Iron (INVAR)) films on various substrates to fabricate redistribution layers (RDL), through silicon vias (TSV) interconnects, pillars, bumps, pads and free standing foils. The linear thermal expansion of the INVAR deposits was measured down to 0.4 ± 0.1 (x10-6, (K-1)) within a process window that corresponds to the ultra-low internal stress (30±2 (MPa)) and uniform morphology (Ra ~ 2 (nm)). The thermal conductivity and specific heat capacity of the INVAR pinhole-free films were found to be in the range of 43 ± 5 (W/mK) and 0.45 ± 0.05 (J/gK), respectively. Ultra-high ductility of about 40 ± 10 % has been obtained for the free standing INVAR films, which possess the high tensile strength of 500 ± 60 (MPa) and yield strength of 280 ± 50 (MPa).
Low Power FDSOI Technology and Devices for RF Applications
Authors: Schwan Christoph , Chew Kok Wai , Feudel Thomas , Kammler Thorsten , Faul Juergen , Kang Laegu , Taylor Richard , Huschka Andreas , Kluth Jon , Carter Rick , McKay Thomas , Nowak Edward , Watts Josef , Harame David L.
Published: September 2016

We report RF Characteristics in a Low Power High Performance Ultra-thin Body and Box (UTBB) FDSOI technology. The technology features Si-Channel nFETs and SiGe-Channel pFETS, a gate first HiKMG stack with a gate length (LG) of 20nm, BOX thickness (TBOX) of 20nm and is similar to that described previously[1]. The use of the backgate gate is shown to dynamically change the operating range and expand the dynamic range for RF. Competitive fTs are reported for nFETs. The thin body architecture demonstrates high self gain. The technology is shown to be well optimized for applications like IoT where low power and RF performance are a premium.
TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOS
Authors: VU Van-Tuan , Celi Didier , Zimmer Thomas , Fregonese Sebastien , Chevalier Pascal
Published: September 2016

This paper presents and discusses the challenges and solutions to calibrate the TCAD of high-speed DPSA-SEG Si/SiGe HBTs in 55-nm BiCMOS. The variation of the 1D doping profiles with the emitter width observed from EDX measurements has been addressed by TCAD simulation. Simplified base link formation by controlling the boron diffusion through polycrystalline / mono-crystalline interface in Sprocess simulation is a central step to capture a reasonable maximum oscillation frequency (f
MAX). Finally all physical models including band-gap narrowing, saturation velocity, high-field mobility and SRH recombination, which impact the SiGe:C HBTs performance, are calibrated in Sdevice module of Synopsys®.
(Invited) Direct Band Gap Germanium
Authors: Elbaz Anas , El Kurdi Moustafa , Prost Mathias , Ghrib Abdelhamid , Sauvage Sébastien , Checoury Xavier , Aniel Frederic , Zerounian Nicolas , Picardi Gennaro , Ossikovski Razvigor , Beaudoin Gregoire , Sagnes Isabelle , Boeuf Frédéric , Boucaud Philippe
Published: September 2016

We show that direct band gap germanium can be obtained with external silicon nitride stressor layers. The cross-over from indirect to direct band gap is found to occur for an equivalent 1.67% biaxial tensile strain. Both whispering gallery modes and quasi-radial modes are observed with tensile-strained Ge microdisks. Quality factors up to 7100 have been measured around 2 µm wavelength. We demonstrate that circular Bragg reflectors can significantly enhance the quality factors of quasi-radial modes in strained germanium microdisks.
Germanium/Silicon-Germanium Heterostructure Avalanche Photodiodes on Silicon
Authors: Miyasaka Yuji , Hiraki Tatsurou , Tsuchizawa Tai , Wada Kazumi , Ishikawa Yasuhiko
Published: September 2016

Ge/graded-SiGe heterostructure avalanche photodiodes (APDs) are investigated for low-noise and low-voltage APDs in Si photonics. Ultrahigh-vacuum chemical vapor deposition is used to grow graded-SiGe/Ge heterostructures on p
+-Si as the carrier-multiplication layer, followed by the growth of Ge optical absorption layer. The valence band discontinuity at the Ge/SiGe interface enhances the impact ionization for photo-generated holes injected from the Ge optical absorption layer via the graded SiGe, being responsible for the low-noise and low-voltage APD operation. Fabricated free-space APDs show larger multiplication gain than that for simple Ge homojunction APDs. As confirmed by the x-ray diffraction measurements, the growth temperature is found to be a key parameter for the formation of abrupt SiGe/Ge interface to enhance the multiplication gain.
(Invited) Fabrication of Ge Waveguides by Epitaxial Lateral Overgrowth toward Monolithic Integration of Light Sources
Authors: Oda Katsuya , Okumura Tadashi , Kasai Junichi , Kako Satoshi , Ishida Satomi , Iwamoto Satoshi , Arakawa Yasuhiko
Published: September 2016

Ge waveguides (WGs) were fabricated on an SiO2 layer by combining epitaxial lateral overgrowth, chemical mechanical polishing (CMP), and reactive ion etching (RIE) of a Ge layer selectively grown on SiO2 patterns using low pressure chemical vapor deposition. Selectivity was promoted by increasing growth temperature; length of the epitaxial lateral overgrown Ge layer reached 5 μm on the SiO2 layer under conditions of optimal selective growth at a temperature of 750°C. The Ge layers were planarized by using CMP down to a thickness of 1 μm, and then Ge WGs as active regions for light emitting devices were formed by using RIE on the planarized Ge layers. After defective regions around the Ge/Si interface were removed, four-times-higher photoluminescence was obtained from the Ge WGs compared with one that contained the Ge/Si interface. These results indicate that this combined technique efficiently improved the performance of Ge light-emitting devices.
Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators
Authors: Kurosawa Masashi , Liu Kun , Izawa Momoka , Tsunoda Isao , Zaima Shigeaki
Published: September 2016

We investigate incorporation effects of p-type dopant (B or Al) on the growth characteristics, electrical and thermoelectric properties of Ge-rich polycrystalline (poly-) Ge1-xSnx (x<0.02) films on SiN crystallized by solid-liquid coexisting annealing in the temperature range of 500-700oC. XRD analyses demonstrate that a larger grain size can be achieved for GeSn samples with an initial Sn content of 2% and Al-doped samples compared with Ge samples and B-doped samples, respectively. In analyses of electrical and thermoelectric properties, we found that B-doped samples have a larger electrical conductivity and Seebeck coefficient, which corresponds to higher carrier concentration in the poly-Ge1-xSnx films compared with the others. As a result, a maximum power factor of ~1 mW/K2cm is obtained for a B-doped sample, which value is comparable or better than that for undoped Ge1-xSnx films (0.045<x<0.123) epitaxially grown on Ge(001).
(Invited) Processing Technologies for Advanced Ge Devices
Authors: Loo Roger , Hikavyy Andriy Yakovitch , Witters Liesbeth , Schulze Andreas , Arimura Hiroaki , Cott Daire , Mitard Jerome , Porret Clement , Mertens Hans , Ryan Paul , Wall John , Matney Kevin , Wormington Matthew , Favia Paola , Richard Olivier , Bender Hugo , Horiguchi Naoto , Collaert Nadine , Thean Aaron
Published: September 2016

With proceeding CMOS device scaling, process technologies become more and more challenging as the allowable thermal budget for device processing continuously reduces. This is especially the case during epitaxial growth, where a reduction of the thermal budget is required for a number of potential reasons (e.g. to avoid uncontrolled layer relaxation of strained layers, surface reflow of narrow fin structures, as well as doping diffusion and material intermixing). Different aspects become even more challenging when Ge is used as a high-mobility channel material and when the device concept moves from a FinFET design to a nanowire FET design (also called Gate-All-Around FET). In this contribution we address some of the challenges involved with the integration of high mobility Group IV materials in these advanced device structures.
Growth Rate and Temperature Dependence of Oxygen Incorporation in Si1-XGex Thin Films
Authors: Jackson Clayton Adam , Williams Adam J , Deelman Peter W
Published: September 2016

A series of Si1-x
Ge
x
heterostructures was grown at different substrate temperatures using molecular beam epitaxy (MBE) on Si <100> substrates, where the composition x was varied in a “staircase” pattern by stepping down the Ge flux between constant composition layers while maintaining a constant Si flux, and vice versa. The Ge composition and oxygen concentration of these staircase structures were then measured using secondary ion mass spectroscopy (SIMS). From the SIMS profiles, it is evident that the oxygen concentration is inversely proportional to and linear with growth rate, regardless of how that rate is changed. This observation implies that the dominant source of oxygen is the residual background in the MBE chamber. Further, the oxygen concentration retains its linearity in growth rate when changing substrate growth temperature. The oxygen concentration increases at lower growth temperature, and shows an exponential dependence in substrate growth temperature for a given rate.
Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing
Authors: Yoo Woo Sik , Kang Kitaek , Nishigaki Hiroshi , Hasuike Noriyuki , Harima Hiroshi , Yoshimoto Masahiro , Sekar Karuppanan
Published: September 2016

Phosphorous ion clusters (P4
+) (8 keV, 4x1015 cm-2) were implanted with carbon ion clusters (C7) targeting 1.30 at.% and 1.50 at. % flat C profile (~50 nm from the surface) for NMOS device performance enhancement by tensile strain generation. Flash anneal (fRTP) at 1200oC and impulse spike anneal (iRTP) at 1000oC and 1050oC were used as annealing conditions. Micro-Raman characterization of cluster C-implanted Si was done before and after various rapid thermal annealing (RTA) techniques and conditions under various excitation wavelengths for virtual depth profiling of Si stress. As-implanted Si wafers showed almost no Raman signal due to the crystalline lattice damage from high dose cluster ion beam implantation. After RTA of the implanted Si wafers under different techniques and conditions, significant broadening and shift of Raman peaks, towards the lower wavenumber side, was measured, indicating the presence of tensile strain and crystallinity alterations. High resolution X-ray diffraction (HRXRD), secondary ion mass spectroscopy (SIMS) depth profiling and sheet resistance measurement results were compared with multiwavelength micro-Raman characterization results.
High Thermal Stability of Tensile Strained Direct Gap GeSn Crystallized on Amorphous Layers
Authors: Li Haofeng , Cuervo Covian Alejandra , Wang Xiaoxin , Liu Jifeng
Published: September 2016

In this paper, we systematically research the thermal evolution of substitutional Sn composition, tensile strain, and the direct band gap of highly (111) textured, direct gap Ge1-xSnx (0.075<x<0.085) thin films crystallized on amorphous SiO2 layers. We show highly effective strain induced band engineering in Ge1-xSnx(111) films towards enhanced direct-gap semiconductor properties, which can be used as high performance optoelectronic materials for monolithic 3D electronic-photonic integration. A dilatational deformation potential of a=-12.8±0.8 eV is derived. We also demonstrate that the tensile strained GeSn crystallized on amorphous layers offers high thermal stability and fabrication/operation robustness for integrated photonics. The effects of geometrically-confined growth on the thermal stability of Ge1-xSnx were also explored by using laser annealing to induce the nucleation of different GeSn patterns. With the suppression of grain boundaries in patterned GeSn, 10-13 at.% Sn is retained at 600 °C.
Enhanced Light Emission from N-Doped Ge Microdisks by Thermal Oxidation
Authors: Hashimoto Hideaki , Xu Xuejun , Sawano Kentarou , Maruizumi Takuya
Published: September 2016

We have observed enhanced direct band-gap light emission from highly n-doped germanium microdisks on silicon by thermal oxidation. The microdisks are fabricated by electron beam lithography and dry etching. Thermal oxidation is found to be able to passivate the dry-etched sidewalls, thus efficiently suppress the nonradiative recombination related to the sidewalls and enhance the emission intensity. The enhancement factor increases as the disk size decreases, approaching about 3.42 for microdisks with radii of 0.8 µm. Investigation of light emission dependence on the thermal oxidation temperature from 100 to 550 °C show that there is a trade-off between reduction of doping concentration caused by dopant out-diffusion and surface passivation effect. These results indicate that thermal oxidation is a highly promising yet very simple way to fabricate high quality germanium microresonators, thus to realize low-threshold germanium lasers monolithically integrated on Si substrates.