bluuebunny/crossref_metadata_2025 huggingface dataset:
Calculations of Image Lag in Vidicon-Type Camera Tubes. I. Beam Discharge Lag and Total Image Lag, Including Photoconductive Lag
Authors: Yoshida Okio , Kiuchi Yuji
Published: November 2005

Image lag in vidicon-type camera tubes is analyzed, taking scanning processes with a low-velocity electron beam into consideration. As the beam landing characteristics, not only usual form of i

b
=I

b
exp
(a
v) but also newly invented one of i

b
=I

b
/{1+exp
(-a
v)} are employed. The latter shows much better agreement to the measured characteristics than the former, but the difference between them is negligible at the regions where image lags become troublesome. First, by expressing target surface potentials and target output currents in exponential forms, the relationship between them is obtained analytically and presented graphically as the target surface potential curves under steady state conditions. Then, the fundamental expressions for beam discharge lag or capacitive lag are obtained for both rise and decay by applying the above-mentioned relationship to transient cases. Finally, the total image lag, including photoconductive lag, is analyzed. From the results obtained by computer calculation, the general features of image lag and the lower limit of image lag are known.
Impulsive Optic-Acoustic Effect of CO2, SF6 and NH3 Molecules
Authors: Aoki Tadashi , Katayama Mikio
Published: November 2005

A rapid change of pressure of gas is observed by using a condenser microphone when a CO2 laser pulse is incident on the various kinds of gases such as CO2, SF6 and NH3 in an absorption cell. By analysing a wave form of the pressure change, the relaxation times of vibration-translation interaction of the relevant levels of molecules are obtained. Acoustic waves are also generated by the laser pulse and superimposed with the above mentioned pressure wave. It is found that a polarity of the acoustic wave of CO2 is inverted from those of SF6 and NH3.
Pressure Effects on the Eutectic Temperature of the Sn-Zn, Sn-Pb, Sn-Bi and Cd-Zn Systems
Authors: Ozaki Yoshiharu , Saito Shinroku
Published: November 2005

The pressure dependences of the eutectic temperature in systems Cd-Zn, Sn-Zn, Sn-Pb and Sn-Bi are investigated up to 35 kbars. In the system Cd-Zn, Sn-Zn and Sn-Pb it shows monotonous increase with pressure. But in the system Sn-Pb the simple eutectic relation vanishes. In the system Sn-Bi it shows a minimum. The melting curves of Cd, Zn, Sn, Pb and Bi are also determined up to 35 kbars. These results are compared with those of Kennedy and Butuzov.
The observed and calculated initial slopes of the pure metals and the eutectic mixtures are discussed on the basis of the thermodynamic representation of the pure and binary system. The agreement of both is good. Especially it is noticeable that the pressure effect on the eutectic temperature is smaller than that in the pure end members.
The Temperature Coefficient of the Breakdown Voltage of Si Abrupt Punched-Through Type Diodes
Authors: Okuto Yuji
Published: November 2005

Experimental results on the temperature coefficient β of the breakdown voltage of punched-through type Si p
+–n–n
++ diodes are described.
The increment of the breakdown voltage Δ
V is proportional to both the increment of the junction temperature Δ
T and the width of the punched-through space charge region W

n
. β (≡Δ
V/[Δ
T·V

B
]) can be expressed by

β=\frac{2CW_{0}}{E_{\text{max}}(2W_{0}-W_{n})},

where C=constant, E
max=the maximum electric field at the junction and W
0=the width of the punched-through space charge region calculated from the impurity concentration of n-layer. Values of β agree with those obtained by the simple theoretical relation of the ionization coefficient α.
An Approach to α Unified Theory of the Flow Behavior of Time-Independent Non-Newtonian Suspensions
Authors: Oka Syoten
Published: November 2005

A theoretical study is presented on the rheological properties of suspensions showing time-independent non-Newtonian behavior. It is assumed that bonds are formed between particles and that they are broken gradually with increase in shear stress or shear rate. Based on such a model of suspensions, a differential equation is derived to determine the flow curve of suspensions. The differential equation contains a dimensionless parameter α which is less than or equal to unity. When α=1, the flow curve is reduced approximately to power equation, and when α=1/2, the flow curve is reduced approximately to Casson equation. For a suspension showing a measurable yield-value, Bingham equation is obtained when α=0, and the flow curve is reduced approximately to Herschel and Bulkley equation when α=1. The flow curve for arbitrary values of α is also obtained. Casson equation is further discussed in detail.
Analysis of Trapezoid Distortion due to Charge-Up in Electron Beam Recording
Authors: Saitou Norio , Munakata Chusuke , Maekawa Akiji
Published: November 2005

Rectangular patterns recorded by an electron beam upon a photographic plate are distorted into trapezoid shape because of the charge accumulated onto the recording plate. The distortion is theoretically analysed under various conditions with computer calculation. Computed values are compared with experimental values. They agree fairly well. The accelerating voltage is from 15 to 25 kV and the beam current is from 1 to 2 nA. The distortion depends upon accelerating voltage, charge density on a recorded line, scanning time for the line, length of the line, pitch of the recorded lines and a discharge time constant for the accumulated charge. The discharge time is closely related with the leak resistance and the stray capacitance of recording medium.
Growth of Zinc Oxide Single Crystals by Vapor Phase Reaction
Authors: Hirose Masami
Published: November 2005

ZnO single crystals are grown by vapor phase reaction with ZnI2 source. When the growth region is maintained between 1150°C and 1200°C, crystals grow by oxidation, and between 970°C and 1020°C, by hydrolysis. Crystals are mainly needles 15 mm in length or plates 8 mm2 in area. Patterns suggesting their growth mechanisms are observed in their microphotographs.
The present experiments confirm the conclusion that concerning the needle-like growth, the complete {101̄0} surfaces develop from the root to the tip and from the edges toward the central part, and that the <21̄1̄0> oriented growth on the {0001} planes begin preferentially and then proceed toward the edges of the hexagonal geometry. Concerning the plate-like growth, it is interpreted by the two-step mechanism that the layer growth on the (0001) and (0001̄) surfaces of the needles and whiskers begins after the <21̄1̄0> oriented growth on them has finished.
Hot Pressing of Ni-Zn Ferrites
Authors: Suemune Yasutaka
Published: November 2005

Several effective factors in hot pressing of Ni-Zn ferrites such as firing temperature, applied pressure, atmosphere and soaking time are examined. Both densification and grain growth are found to be markedly enhanced by addition of small amounts of Cu oxide. Particle size of raw materials is another influencing factor in hot pressing.
A Simple X-Ray Camera for High Pressure Uses
Authors: Endo Shoichi , Mitsui Tadayasu , Yamakawa Kinji , Yagi Takehiko
Published: November 2005

An extremely simple camera has been developed which enables X-ray powder diffraction under pressures up to 100 kbar at room temperature. A thick cylinder of a pressure vessel acts as a body of a Debye-Scherrer camera. A pressure-clamping method is used. To test the camera, the lattice parameter of NaCl has been measured at the Bi III-V transition point.
Cd3As2 Thin Film Magnetoresistor
Authors: Matsunami Hiroyuki , Tanaka Tetsuro
Published: November 2005

A magnetoresistor is fabricated by using a thin film of n-type Cd3As2. The Hall mobility is constant below 200°K in most of thin films, and in some films below 300°K. The geometry of a device has an important effect on the magnetoresistance. The resistance of this magnetoresistor at zero magnetic field is 190Ω. The magnetoresistance changes according to B
2 up to 1 Wb/m2. The resistance change of 4Ω is obtained at 0.5 Wb/m2. The magnetoresistance sensitivity is 0.7 m4Ω/Wb2. The Cd3As2 thin film magnetoresistor has the following advantages: 1) it can be easily prepared by the usual evaporation method; 2) this device has no temperature dependence below 200°K in most cases, and in some cases below room temperature.
Exact Solutions in the Semi-Classical Theory of a Gas Laser for Two Special Cases
Authors: Uehara Kiyoji , Shimoda Koichi
Published: November 2005

An exact expression of the gain constant of two-level molecules (or atoms) in a standing-wave optical field is obtained for a special case where the optical frequency is in exact resonance with the molecular transition and the longitudinal and transverse relaxations have equal decay constants. Secondly, an exact form of gain constant as a function of frequency detuning which decribes the shape of Lamb dip or saturated absorption is shown for another case where the transverse relaxation is much faster than the longitudinal relaxation. A flat velocity distribution of molecules at Doppler limit is assumed in either case.
InSb Carrier Lifetime in High Electric Field
Authors: Hongo Shozo , Panyakeow Somsak , Shirafuji Junji , Inuishi Yoshio
Published: November 2005

The transient behavior of excess carriers (electron-hole plasma) in n-InSb at 77°K produced by an intense Q-switched CO2 laser beam and also by impact ionization is investigated under various applied electric fields. It was found in this experiment that the lifetime of these excess carriers strongly depends on the applied electric field, possibly due to detrapping of trapped holes at higher fields through collisions with free carriers.
A Linear Chain Model for Piezoelectricity in Zincblende and Wurtzite Type Crystals
Authors: Ogawa Tomoya
Published: November 2005

A linear chain model, in which successive positive and negative ions are connected by two kinds of elastic springs with constants α and β, is proposed for explanation of piezoelectric effect. In this model the piezoelectric constante33is given bye33=Ne*a(α-β)/2(α+β), wheree*is the effective charge on an ion,ais the lattice parameter andNis the number of ion pairs per unit length or unit volume. This linear chain model is successfully checked by elastic constants, dielectric constants, spontaneous polarization and infrared absorption and reflection in the crystals with the zincblende and wurtzite structures. This also explains well the structure sensitive nature of piezoelectric effect which has been recently revealed.
Energy Indicator of the Electron Synchrotron
Authors: Fujii Tadao , Imanishi Akira , Kasuya Masaaki , Yamakawa Tatsuya
Published: November 2005

A new method is developed for the precision indicator of the electron synchrotron energy. The signal from a search coil placed inside the main magnet (∝d
B/d
t) is integrated by a 1 MHz Voltage-to-Frequency converter and its digital outputs are counted during the time interval between the zero field and the maximum field to give the precise value of B
0 at the central orbit. After being calibrated with a standard pair spectroscopy, the device is capable of displaying the value of an endpoint energy of Bremsstrahlung beam itself with an accuracy of ±0.1 MeV for the energy range of 300∼1200 MeV.
A Simple Calculation on Backscattering of Light Ions of KeV Energies
Authors: Ishitani Tohru , Shimizu Ryuichi
Published: November 2005

The simple theoretical treatment of McCracken and Freeman, which was derived on the basis of large angle and single scattering process, was improved by introducing the loss factor of the incident beam and generalized to the tilting incidence. The results follow the experiments fairly well as to energy distribution, backscattering coefficient as well as angular distribution.
Depopulation of Excited Mercury Atoms by Collisions with Hydrogen Molecules in the Flowing Mercury Afterglow
Authors: Nishikawa Masahiro , Fujii-e Yoich , Suita Tokuo
Published: November 2005

Using the steady state flowing afterglow method, hydrogen molecules in their ground states are introduced into the mercury afterglow plasma in which the dissociative recombination process is predominant, and the depopulation of the excited mercury states by collisions with hydrogen molecules are investigated. The quenching of the radiation emitted from 73S1or 63D state is explained by assuming that, after the dissociative recombination, the dissociated atom produced in the excited state of which transition probability is smaller than those of 73S1and 63D states is depopulated by collisions with hydrogen molecules. The resonance state 63P1and the metastable state 63P0are also quenched and these quenching cross sections are estimated to be δ̄q1=6.6 Å2and δ̄q0=0.25 Å2, respectively.
A New Cryostat for Neutron Diffraction Experiments
Authors: Shimaoka Kohji , Niimura Nobuo , Hoshino Sadao
Published: November 2005

A special cryostat for neutron diffraction experiments was designed. Single crystals of substances which are gaseous at room temperature can be grown in the cryostat, and then the diffraction measurements are carried out. Various advantages of this device in comparison with a usual conventional-type cryostat are described.
Charge Distribution and Thermally Released Current in the Gamma-Irradiated Cerium-Glass
Authors: Nonomura Takuo , Yamamoto Kakuji
Published: November 2005

The thermally released current of the cerium-glass irradiated with 60Co-γ-rays is measured under the condition of temperature-gradient through the glass and no external applied electric field. This current has considerable differences due to the condition whether directions of radiation and temperature-gradient are parallel or antiparallel. When a copper plate 0.3 mm in thickness is placed in front of or at the back of glass specimens during irradiation, this current in specimen at the hot or cold side changes. These current carriers are Compton electrons generated in the specimen and secondary electrons injected into the specimen from surroundings. The relationships of the thermally released current and the charge distribution produced by γ-rays are discussed.
Optimum Harmonic Generation in Semiconductors
Authors: Sodha M.S. , Sawhney B.K. , Sawhney R.L.
Published: November 2005

In this paper, the authors investigate the optimum magnitudes of the various parameters for which the magnitudes of the electric vectors of the second and third harmonic components, in the reflected and transmitted waves from a semiconducting slab at low temperatures, are the maximum. It is found that the intensity of harmonics in the transmitted component is higher than that in the reflected component. Appreciable second harmonics may be generated in the transmitted and reflected waves when 1.00<ξ0<1.60 and 4.0<(ωp/ω)2<6.0 while the efficiency of third harmonic conversion is a maximum when ξ0=0.80 and 14.0<(ωp/ω)2<16.0 for the transmitted component and when ξ0=0.82 and 12.0<(ωp/ω)2<14.0 for the reflected component; ξ0(=ωz/C) being the dimensionless thickness of the semiconducting slab.
Dynamics of an Isolated Stripe Domain in Bubble Film
Authors: Iwata Satoshi , Shiomi Shigeru , Uchiyama Susumu
Published: November 2005

The existing horizontal Bloch line (HBL) theory for a planar wall is extended to give explicit expressions for important dynamic properties of the wall such as the translation velocity, the overshoot distance etc. The effect of a static in-plane field applied parallel to the wall is also discussed. When a single straight stripe domain is translated by a pulsed-gradient magnetic field, the dynamic properties of this domain are shown to be directly comparable with those for the planar wall. Experimental results are shown for a single stripe domain in a bubble film with low damping. While the in-plane field is small, the results agree well with the theory. When the in-plane field is increased, however, a phenomenon is found which is hard to explain by the present theory.
Surface Band Bending Effects on Photoluminescence Intensity in n-InP Schottky and MIS Diodes
Authors: Ando Koushi , Yamamoto Akio , Yamaguchi Masafumi
Published: November 2005

Surface band bending effects on the photoluminescence (PL-) intensity in n-InP Schottky and MIS diodes were studied. The bias dependence curve of the PL-intensity for n-InP is quite different from those obtained for Si, Ge and GaAs with large surface recombination velocity. Remarkable depression and enhancement of the PL-intensity were observed in n-InP with application of reverse and forward bias voltages. The maximum PL-intensity was achieved at the flat-band bias condition in Schottky diodes. In MIS diodes, the PL-intensity increased when the forward bias voltage was more than the flat band voltage. PL-intensity variation with surface band bending for Schottky and MIS diodes can be explained well using a surface dead layer model in the depletion condition and a surface excess carrier model in the accumulation condition.
Electrical Properties of (La1-xSrx)FeO3 (0≦x≦0.5) under Various Relative Humidities
Authors: Taguchi Hideki , Takahashi Yuzuru
Published: November 2005

Perovskite-type (La1-x
Sr
x
)FeO3 (0≦x≦0.5) is synthesized at 1300°C in a flow of pure oxygen, and its electrical resistivity (R) measured under various relative humidities (H). R of LaFeO3 decreases with increasing H owing to its ionic conductivity. On the other hand, in the range 0.1≦x≦0.5, R increases with increasing H. This phenomenon is explained by the electron boundary layer model.
Effects of End Plugs on Electric Input Power for Theta Pinch Plasmas
Authors: Ebihara Kenji
Published: November 2005

Theta pinch plasmas plugged with a metal and with an insulator were studied experimentally. Both the externally-supplied input power and the electric heating power were measured by a magnetic probe and a magnetic loop. In addition, the spectral line intensity was measured in order to investigate the effects of the plugs on ionization phenomena in the plugged plasmas.
The end plugs had a significant effect on the profiles of the electromagnetic field, the electric heating power and the spectral intensity. It was also found that an acrylic acid resin plug was effective for heating the pinch plasma in the compression phase and that an aluminium plug was useful for maintaining the ionized state for a long time during the decay phase.
Gloss Measurement on Painted Surfaces
Authors: Matsuta Morihiro , Kubota Tsuyoshi
Published: November 2005

A method of gloss measurement which can obtain physical quantities closely associated with psychological gloss intervals was investigated. Sensory evaluation by a modified paired comparison method was used to prepare a series of several standard samples with appropriate gloss intervals. The gloss of these samples was measured using an apparatus that senses the distinctness of the image of a reflected knife edge pattern. The maximum tangent slope of the dark-to-bright transition curve for the image correlates linearly with the gloss intervals. The linearity becomes better for higher spatial resolution and the sensitivity becomes higher for a large floating range between the sample and the image. Blurring of the reflected images is discussed in relation to the roughness of the reflecting surfaces.
Experimental Approach for LVV Auger Spectra of Sulfur in Some Sulfate Salts
Authors: Miura Tadao
Published: November 2005

The Auger spectra of sulfur in some sulfate salts have been investigated by ionization loss and low-energy loss spectroscopy. The spectra have a common line shape which is peculiar to sulfur in sulfate ions. They are considered to reflect the molecular orbitals of sulfate ions and can be interpreted in terms of cross-transition. The interpretation is made by comparing the observed Auger energies with the energies calculated from the loss energies in the ionization loss process and the low-energy loss process. The final hole states are not the outer shell levels of sulfur itself but the molecular orbitals which derive from sulfur and oxygen atoms.
Use of Mass Spectra for End Point Detection in Etching SiO2 Films on Si
Authors: Oshima Masaharu
Published: November 2005

A study has been made on a monitoring technique using mass spectra in etching SiO2 films on Si substrates by reactive sputter etching. The 85SiF3
+ mass peak proved to be a more effective indicator for the monitoring than the 16O+ mass peak. The end point determined by this monitoring technique was confirmed by XPS surface analysis. The signal decrement ratio at the SiO2-Si interface was denoted as a function of the etch rates of SiO2 and Si, and the sample area. This decrement ratio shows good agreement with the experimental results at various etching powers. This monitoring technique, using the 85SiF3
+ mass peak, turns out to be more effective than emission spectrometry in the SiO2-Si system from the viewpoints of signal-to-noise ratio and signal stability.
Metal Impurity Behaviour in DIVA Determined Using a Blow-Off Technique
Authors: Yamauchi Toshihiko , Sengoku Seio , Nagami Masayuki , Maeda Hikosuke , Kasai Satoshi , Sugie Tatsuo , Kimura Haruyuki , Matoba Tohru
Published: November 2005

We obtained clear evidence of metal impurity behaviour in DIVA by using a blow-off technique. The impurity in plasma was found to have a constant velocity of (2–3)·103cm/s which is much less than the injected velocity of 105cm/s. Confinement times of metal impurity of about 1 and 4 ms in the peripheral and central region respectively were obtained. The particle balance is represented as the reflected rate 78%, the reducted rate by the divertor action 16%, and the accumulated rate 6%. Major disruption was forced by injecting a large amount of gold atoms.
Effects of Magnetic Field and Injected Current on dc SQUIDs with Dayem Bridges
Authors: Aomine Takafumi , Mizuno Kazuo , Miyake Kazuo , Matsuo Kazuhiro , Kusunoki Shigeru , Hidaka Mutsuo
Published: November 2005

The dependence of the periodicity of dc SQUID's with Dayem bridges upon parameters, such as temperature, normal state resistivity, and the thickness of superconducting films, has been measured under applied magnetic field or control current injected into the films. The dc SQUID with Dayem bridges was made from Sn and granular Al. In the case of the applied magnetic field, the period has no dependence upon these parameters. The results show that the contour of integration of the London fluxoid-quantization condition is taken through the center of the film strips independently of the above parameters. In the case of the control current, the period was found to be associated with kinetic inductance as well as magnetic inductance.
Magnesium Twinned Particles Grown in Inert Gases
Authors: Ohno Takehisa , Yamauchi Kenji
Published: November 2005

Twinned particles of magnesium prepared using the gas evaporation technique were studied using electron microscopy. Particles with (10.1), (10.3), (11.1) and (11.2) twin planes were found in the smoke outer zone. Their external faces were the same as those of single crystal particles, i.e. {10.0} and (00.1). The growth of the (10.1) twinned particle was more pronounced than that of the other three kinds of twinned particles and from this it was deduced that the twin formation occurs at the nucleation stage.
Increase in Uniformity of Amorphous GdCo Films by Control of Oxygen Quantity
Authors: Togami Yuji , Kobayashi Kikuo
Published: November 2005

The spatial uniformity of compositions and of the magnetic property of rf-sputtered amorphous GdCo thin films was investigated by Auger electron spectroscopy, electron probe microanalyzer, and polar Kerr hysteresis loops. It was found that by applying a negative dc bias to the substrate during sputtering, the quantity of oxygen incorporated into the film decreases and considerable uniformity of the oxygen and of magnetic property is obtained, though the magnetic property shows a slight increase in compensation temperature toward the edge. This slight change was found to come from a change in composition of the metals. A further increase in uniformity was achieved by intentionally introducing a small amount of oxygen during the deposition process.
Distribution of Obstacle Spacings to Dislocation Motion in the Pre-Yield Region in White Tin Single Crystals
Authors: Ojima Kozo
Published: November 2005

Moved distances of individual dislocations were measured on the surface of a single crystal of white tin by using the etch hillock technique. In this technique, the moved distance was just coincident with the length of a hillock trace l. The applied stress was lower than that at the elastic limit. That is, the stress was maintained below 50 g/mm2.
The distribution of the moved distance of dislocations was obtained by measuring the length of the individual hillock traces. The result was theoretically analyzed on the condition that the obstacles were randomly distributed and the deduced distribution function ϕ(l) showed good agreement with the experimental results. As a result, the obstacle for the moving dislocation in the range of the stress lower than that at the elastic limit was found to be mainly constructed by stationary dislocations.
Frequency Stabilization of a He-22Ne Laser by Intracavity Polarization Spectroscopy of CH4
Authors: Ohtsu Motoichi , Ohta Satoru , Tako Toshiharu
Published: November 2005

The method of intracavity polarization spectroscopy was employed to measure the Doppler-free saturated dispersion spectrum in CH4 (the E component of the P(7) line in the ν3 band). A He-22Ne laser at 3.39 µm was used as a light source. The experimental results agreed well with the results of numerical calculations. This spectrum was used to stabilize the laser frequency without frequency modulation, and a stability of 1.1×10-12 was obtained for an integration time of 200 s. The second derivative signal of the spectrum was also used for the stabilization by modulating the laser frequency. The stability obtained was 2.5×10-13 for an integration time of 300 s. Furthermore, an alternative method using a Faraday rotator is proposed to get higher frequency stability.
Thermally Stimulated Currents from Ion-Injected Teflon-FEP Film Electrets
Authors: Ikezaki Kazuo , Miki Mika , Tamura Jun-ichi
Published: November 2005

Thermally stimulated current spectra were investigated for ion-injected teflon-FEP film electrets which were positively charged by the liquid-contact charging method using water or aqueous solutions of various electrolytes such as LiNO3, NaCl, RbCl, MgCl2, AlCl3, KI and CaCl2. TSC from these electrets showed two peaks at about 90°C and 130°C. The relative peak intensity of the sharp peak at 90°C was strongly affected by the kind and the concentration of the electrolytes used for charging, and it is concluded that this sharp peak is due to the mobile ions injected into the polymer.
An Analogue Simulator Applied to Non-Stationary Vacuum Systems
Authors: Okano Tatsuo
Published: November 2005

This paper describes the development of a nonlinear resistance unit simulating viscous flow conductance which uses a dual-cell optocoupler. The resistance of this VFS (viscous flow simulation) unit varies from 3 kΩ to 30 MΩ and is inversely proportional to the mean voltage applied to the unit. By connecting a VFS unit and an ordinary fixed resistor in parallel, the conductance of a long circular pipe was simulated in a wide range from molecular flow to viscous flow. The response time of the unit was 2 ms for turn-on and 17 ms for turn-off. A multistage vacuum system was simulated with several VFS units and the results are compared with the numerically-calculated values.
Effects of Microshorts on Current-Voltage Characteristics of Josephson Tunnel Junctions
Authors: Enpuku Keiji , Yoshida Keiji , Hamasaki Katsuyoshi , Irie Fujio
Published: November 2005

The effects of microshorts on the properties of Josephson tunnel junctions at a finite dc voltage are studied. The disturbance of the electromagnetic field by microshorts and the resulting dc current-voltage characteristics are calculated assuming the RSJ model for the microshorts. It is shown analytically that a microshort gives rise to a current which does not vanish even at a sufficiently high magnetic field, i.e., an excess current. It is also shown that the amplitude of the excess current depends strongly on the ratio of the microshort resistance to the junction impedance seen from the microshort. The observed magnetic-field dependence of the current-voltage characteristics of junctions showing excess currents is explained well by the present analysis.
Energy-Band Bends at GaAs Surfaces in Vacuum-Evaporated-SiOx(1∼2)/N-Type (100)GaAs Systems Detected by UPS Measurements
Authors: Hiramatsu Tomoyasu , Takayama Satoshi , Ishihara Takashi , Takeuchi Yoshiharu , Kimata Morihiko
Published: November 2005

Ultraviolet photoelectron spectroscopy (UPS) measurements have been used to study changes in the energy-band bends at GaAs surfaces during fabrication of vacuum-evaporated-SiO
x(1∼2)/n-type (100)GaAs systems. The energy-band bend is mainly changed by pretreatment of the GaAs surface and is hardly affected by evaporation of SiO
x
. It is shifted downward by about 0.45 eV by annealing the GaAs surface in 3×10-4 Torr O2 from 400°C to room temperature. This shift is explained by a combination of surface-dangling Ga bonds and thermally-excited atomic oxygen, and by the resultant reduction of the surface states density. These results are also used to interpret the results of MIS C-V measurements on the Al/vacuum-evaporated-SiO
x(1∼2)/(100)GaAs system.
High-Temperature Oxidation of Fe-14Cr-4Al Alloy
Authors: Okabe Hirobumi
Published: November 2005

High-temperature oxidations have been performed between 1173 and 1573 K on Fe-14Cr-4Al alloy under isothermal conditions, and also under anisothermal conditions at four linear rates of temperature increase from 1×10-3 to 1.5×10-2 K/s. The activation energy obtained in the anisothermal oxidation with low rates of temperature increase was 282 kJ/mol, in agreement with the isothermal activation energy, 284 kJ/mol. The mass gains under linearly-increasing temperature are calculated using the activation energy and the pre-exponential factor obtained in the isothermal oxidation, and are in accordance with the experimental results obtained at low heating rates.
Organometallic VPE Growth of InAs1-x-ySbxPy on InAs
Authors: Fukui Takashi , Horikoshi Yoshiji
Published: November 2005

InAs1-x-y
Sb
x
P
y
quaternary alloy lattice matched to InAs was successfully grown by organometallic vapor phase epitaxial growth. In a fairly wide composition range (0≦x+y≦0.7) the grown quaternary layer exhibited a mirror-smooth surface and a sharp X-ray diffraction spectrum. Full widths of half-maximum of X-ray rocking curve were 20–30''. The growth rate is limited by the mass transport of indium. The miscibility gap extent was found in the low arsenic composition region (x+y>0.7). The band gap energy of the quaternary layer lattice matched to InAs was obtained from photoresponse measurements. The bowing parameter for the band gap energy of the InSb
x
P1-x
mixed crystal system is estimated to be 1.6±0.3 eV.
Isotope Scrambling Mechanisms of Chlorine LIS by an Ar Ion Laser Induced Reaction of Cl2 with C2Cl4
Authors: Suzuki Kazuo , Kim Pil Hyon , Namba Susumu
Published: November 2005

The chlorine isotope 37Cl was enriched in the Ar ion laser-induced reaction of Cl2 with C2Cl4. The reaction quantum yield was inversely proportional to the square root of the laser power, which shows that the reaction kinetics are the free-radical-chain and its termination is the recombination of two C2Cl5 groups associated by collision with Cl2. The rate constant of this termination is found to be 4.7×1011 l2mole-2s-1. Two kinds of reaction, the resonant energy exchange between excited and unexcited molecules and the non-selective production of Cl in the chain are found to be the mechanisms by which the excitation selectivity is lost, and the selectivity factor S is shown as a function of the laser power and the gas filling pressure. Using S, it found that at most 0.27 of the selectivity is conserved through the reaction and the variation of the enrichment factor with various operating conditions can be explained.
Surface Damage on Si Substrates Caused by Reactive Sputter Etching
Authors: Yabumoto Norikuni , Oshima Masaharu , Michikami Osamu , Yoshii Shizuka
Published: November 2005

Surface damage on silicon substrates caused by RSE has been investigated. Defects are classified into four categories in order of destruction, namely, precipitates surrounded by elastic strain field, surface roughness pattern, polycrystalline and amorphous silicon, and no defects, based on the results of TEM and RHEED observation. In particular, precipitates which reach a depth more than 500 Å were found to cause OSF. The surface damage consists of contamination (C, F, O) layer, C and defect mixed layer, and defect layer in order from the top. The degree of these defects and contaminations expand with increasing power density and etching duration. RSE conditions, where no defects are formed, were determined, e.g., within 1 minute at 0.4 W cm-2.
Differential Capacitance of the Schottky Barrier on a Semiconducting Ferroelectric and Related Materials
Authors: Miyazaki Tomoyuki , Hideshima Osamu , Ohta Toshihiko
Published: November 2005

An expression for the differential capacitance of the Schottky barrier at a metal-semiconductor contact is derived for the case in which the dielectric constant ε depends on the electric field E and the space charge density depends on the electrostatic potential. The dependence of the space charge density on the potential is found to influence the differential capacitance in the same way as in a semiconductor with a dielectric constant independent of the electric field. When the dielectric constants of semiconductors of different doping densities depend on the electric field in the same way, the relation between the capacitance C and the bias voltage V
a is expected to obey a universal function. The 1/C
2 vs. V
a characteristic is concave upward when dε/d|E|<0, downward when dε/d|E|>0.
Surface Self-Diffusion Modications Induced by the Adsorption of Antimony on the Tungsten Field Emitter Tip
Authors: Kozłowski G. , Ciszewski A.
Published: November 2005

The influence of antimony adsorption on the process of self-diffusion of tungsten was investigated by field-ion microscopy. The appearance of the {111} facets and the superstructures in vicinity of {111} crystal faces of tungsten was observed. This was caused by preferential decrease in the activation energy of surface diffusion which occurred along the <110> zone lines toward the {111} faces. This selectivity may be a result of the weakening of the bonding of terminal atoms in the atomic chains parallel to the <111> directions.
Nucleation of Microcrystallites in Phosphorus-Doped Si:H Films
Authors: Mishima Yasuyoshi , Hamasaki Toshihiko , Kurata Hiroyuki , Hirose Masataka , Osaka Yukio
Published: November 2005

Structural properties of partially crystallized Si:H films prepared by glow discharge technique have been studied by Raman scattering and optical absorption spectra. The structure of the Si:H films is found to be a mixture of microcrystalline and amorphous phases. The volume fraction of a microcrystalline part in the Si:H network was determined to be 0.37–0.58 on the basis of the effective-medium theory.
Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
Authors: Munakata Chusuke , Nanba Mitsuo , Matsubara Sunao
Published: November 2005

A flying-spot scanner is constructed to obtain scanning images of p-n junctions made upon Si wafers, having diameters of 50 to 60 mm. The specimen is set upon a metal stage, and the junction surface is entirely covered with a 15-µm thick mylar sheet. A wide transparent electrode is put upon the sheet. A photon beam whose chopping frequency and diameter are 2 kHz and nearly 100 µm, respectively, irradiates the specimen through the transparent electrode and the mylar sheet. Ac photovoltages are measured. Variations of junction depths of 1.1 to 1.4 µm, and those of diffusion lengths in the substrate wafer are easily revealed with the present method.
Grain-Size Development in the Crystallization Process from Amorphous PbTiO3
Authors: Takashige Masaaki , Mitsui Toshiharu , Nakamura Terutaro , Aikawa Yutaka , Jang Min-Su
Published: November 2005

The size of PbTiO3 grains crystallized from amorphous state has been investigated. The devitrification of the sample by suitable annealing has been observed by an optical method and the pronounced effect by the grain growth, in the grain-size region from 50 nm to 1000 nm, has been definitely confirmed by the scanning electron microscopy.
Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
Authors: Morita Mizuho , Isogai Seiji , Shimizu Nobuhiro , Tsubouchi Kazuo , Mikoshiba Nobuo
Published: November 2005

Epitaxial aluminum nitride (AlN) films have been grown on (111), (110) and (100)-oriented Si substrates using metalorganic chemical vapor deposition (MO-CVD). We found that (0001)-oriented AlN films were grown on the above three planes of Si substrates.
Observation of Subsurface Structures by Scanning Laser Photoacoustic Spectroscopy
Authors: Sawada Tsuguo , Shimizu Hiromichi , Oda Shohei
Published: November 2005

Aiming at the detection of the subsurface structure of the material, a new technique using a piezoelectric transducer (PZT) as a photoacoustic detector is presented and discussed. Aluminum foils with a groove under the surface were used as samples and the groove was detected by measuring the amplitude or the phase angle of the photoacoustic signal. By the use of a relatively high modulation frequency, a new elastic image as well as thermal image have been obtained.
Phenomenological Explanations for the Unbiased Operation of Even-Harmonic Josephson Junction Mixers
Authors: Fujisawa Kazuo , Ohmae Yoshinobu , Shiota Fuyuhiko
Published: November 2005

Even-harmonic JJ mixers allow unbiased operation, while odd-harmonic ones do not. Phenomenological explanations are presented for this phenomenon. Based on the voltage source model, a simple analysis is given that explains this phenomenon clearly. Furthermore, based on the current source model, this is studied by using a JJ simulator. In the odd-harmonic mixing, the waveform of supplied current has an odd symmetry, therefore, there is no mean junction voltage and no IF output. In the even-harmonic mixing, there is no such symmetry in the waveform of supplied current, therefore, there is a finite mean junction voltage and IF output.
Calculation of Luminescence Intensities for a Spherical Phosphor Particle
Authors: Urabe Koichi
Published: November 2005

Intensities of the forward and backward luminescence of a spherical phosphor particle excited by a parallel light beam are calculated using geometrical optics. The forward luminescence prevails over backward luminescence when the particle intensely absorbs excitation light and absorption of luminescence is negligible. Total light output and output efficiency are also calculated.
InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
Authors: Sasaki Akio , Kuzuhara Masaaki
Published: November 2005

A very high optical gain (∼900) was obtained near the 1.1-µm wavelength by the InGaAsP-InP heterojunction phototransitor. The light amplifier, which is an integral device of a heterojunction phototransistor and a double-heterojunction laser (or light-emitting diode with confining layers), is presented. The optical bias method is described for the amplification of a weak incident light.
Enhancement-Mode High Electron Mobility Transistors for Logic Applications
Authors: Mimura Takashi , Hiyamizu Satoshi , Joshin Kazukiyo , Hikosaka Kohki
Published: November 2005

Enhancement-mode high electron mobility transistors (E-HEMTs) with selectively doped GaAs/n-Al
x
Ga1-x
As heterojunction structures grown by molecular beam epitaxy are described. E-HEMTs with 2- µm long gates have exhibited the square-law drain characteristic. The device has a g
m of 409 mSmm-1 of gate width at 77 K and 193 mSmm-1 at 300 K. This value of g
m at 77 K is the highest in all field effect devices reported thus far.
Pressure Gauge Using Relaxor Ferroelectrics
Authors: Uchino Kenji , Nomura Shoichiro , Cross Leslie E. , Jang Sei J. , Newnham Robert E.
Published: November 2005

A new type of pressure gauge using relaxor ferroelectrics such as the Pb(Mg1/3Nb2/3)O3-PbTiO3-Ba(Zn1/3Nb2/3)O3 ternary solid solution is described, which reveals a sensitive pressure characteristic of permittivity. This device is much less expensive than conventional gauges and is very compact.
Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
Authors: Hiyamizu Satoshi , Nanbu Kazuo , Mimura Takashi , Fujii Toshio , Hashimoto Hisao
Published: November 2005

Room-temperature mobility of two-dimensional electron gas accumulating at a heterojunction interface in selectively doped GaAs/N-AlGaAs grown by MBE was shown to be potentially as high as 8,600 cm2/Vs with a sheet electron concentration of 5.5×1011 cm-2. This is almost twice as high as the mobility in conventional GaAs FETs with typical carrier concentrations.
19F and 1H NMR and ESR in a-Si:F:H and a-Si:H
Authors: Ueda Shoichi , Kumeda Minoru , Shimizu Tatsuo
Published: November 2005

F NMR signal consists of only a broad line for as-deposited film, while H NMR signals are composed of broad and narrow lines. Most F atoms, therefore, are considered to exist in the closely gathered phase. The total F content does not appreciably change by annealing to 600°C, but a narrow line appears at 450°C, suggesting the change of incorporation scheme of F. Annealing makes the content of H contributing to the broad line decrease faster than that contributing to the narrow line. The change in ESR center density by annealing is discussed in relation to the change of NMR signals.
Switcing Characteristics of Amorphous-Silicon Field-Effect-Transistors
Authors: Matsumura Masakiyo , Kawashima Masatoshi
Published: November 2005

The Dynamic characteristics of amorphous-silicon field-effect-transistors were investigated. The experimental results showed that just after the input of a pulsed gate voltage, a large drain current flowed through the transistors, and that it decreased gradually to a static value. By using these dynamic characteristics, the switching speed of the transistors was estimated to be 100 times as high as that calculated from the static characteristics.
High Dielectric Constant Films of Amorphous LiNbO3 Prepared by Sputtering Deposition
Authors: Mitsuyu Tsuneo , Wasa Kiyotaka
Published: November 2005

Thin films of amorphous LiNbO3 were obtained by a sputtering deposition. The films were crystallized by annealing at 500°C. Measurements of dielectric constant and loss tangent were made for the as-grown film at 1 k to 1 MHz. A temperature dependence of the dielectric constant in a course of heating showed a peak at about 350°C. The peak value at 1 kHz reached 104.
Effects of rf-Bias on Properties of Sputtered Silicon Films
Authors: Suzuki Masakuni , Maekawa Toshikazu , Okano Shuichi , Bandow Tsutomu
Published: November 2005

Amorphous silicon films were prepared by rf-bias sputtering with a magnetron target and the effects of substrate bias on the electrical and optical properties of sputtered films were studied. Moderate substrate bias was found to improve film quality: photoconductivity increased to ∼2×10-4 \mho/cm and the spin density decreased to ∼4×1017 cm-3 for the biased samples. The results are interpreted in terms of the removal of loosely bound materials from the surface by ion-bombardment. Low voltage sputtering due to the magnetron target in high argon pressure would also play some roles in the improvement of film quality.
An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type AlxGa1-xAs
Authors: Ayabe Masaaki , Mori Yoshifumi , Watanabe Naozo
Published: November 2005

An anomaly is reported in the relation of Hall coefficient to resistivity in n-type Al
x
Ga1-x
As. When Al content X is about 0.5, the relation of the Hall mobility to the resistivity has a maximum of 1.7×103 cm2/V·s. at 0.1 Ω·cm at room temperature. The inconsistent mobilities so far reported are caused by this anomaly. At liquid nitrogen temperature, the anomaly is observed even at a lower X of 0.34, without the Hall mobility maximum. Possible models for explaining the experimental results are discussed.
Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 µm Wavelength Region
Authors: Ishibashi Tadao , Suzuki Yoshifumi , Okamoto Hiroshi
Published: November 2005

AlAs/GaAs superlattices were grown by molecular beam epitaxy with a GaAs quantum well width L

z
of 20–160 Å. An X-ray diffraction technique is shown to be a practical and non-destructive method to measure L

z
with in an accuracy of 10%. A photoluminescence measurement showed a sharply peaked structure (Δ
E≦ 50 meV) and indicated that the main carrier recombination process at room temperature is from the n=1 electron quantum level to the n=1 heavy hole level. Carrier concentration dependence of the photoluminescence energy differs from the usual Burstein-Moss shift. The highest emission energy obtained was 1.77 eV (7000 Å).
Irradiation Effects in the Amorphous Alloy Fe40Ni40P14B6
Authors: Hayashi Nobuyuki , Takahashi Tetsuo
Published: November 2005

The effects of helium ion irradiation on the amorphous alloy Fe40Ni40P14B6have been studied. Surface blistering is observed after irradiation at 40 keV with a total fluence of 1018ions/cm2. A conversion electron Mössbauer spectrum of the irradiated alloy shows eminent paramagnetic peaks in the damaged region and reveals no peak corresponding to the ferromagnetic phases which are observed in the heat-treated specimen. The irradiation results in a different crystalline phase from that obtained by heat-treatment.
Effect of Indium on Crystallization of Cadmium Sulphide from Vapor Phase
Authors: Takahashi Ryoji
Published: November 2005

A slight amount of indium coexisting with CdS vapor enormously promotes the crystallization of CdS on silica substrate as if indium vapor behaves as a catalyst. This phenomenon was first observed on the concave termination of In-doped CdS crystals prepared by the Piper-Polich method. A further study of the rate of crystallization of CdS vapor with and without an indium dot presented an explanation of the catalysis of indium: the indium vapor produces CdS molecules from Cd and S vapor and the generated polarity in a molecule exerts an adhesive force to silica that is grcater than to metals and semiconducting materials.
Effect of Point Defects on Laser Oscillation Properties of Nd-Doped Y2O3
Authors: Tsuiki Hideyasu , Masumoto Toshiaki , Kitazawa Koichi , Fueki Kazuo
Published: November 2005

Some laser oscillation parameters of Nd-doped Y2O3 for the 4F3/2→4I11/2 transition are discussed in terms of the point defect concentration. The defect concentration was examined by measuring the electrical conductivities at 1450°C under various oxygen pressures, and the composition of the specimen was controlled by annealing at that temperature in an appropriate oxygen pressure. The laser oscillation loss of 0.50 at.% Nd-doped Y2O3 was minimum when the oxygen pressure during annealing was about 10-8 atm, where the rod was considered to attain the stoichiometric composition. The loss increased as the defect concentration increased. The absorption coefficient of undoped Y2O3 depended on the annealing atmosphere qualitatively in the same way as the loss. The effect of the oxygen pressure during annealing on the fluorescence lifetime was much smaller than that on the loss.