bluuebunny/crossref_metadata_2025 huggingface dataset:
Malnutricion infantil e inseguridad alimentaria como expresión de las condiciones socio-económicas familiares en Villaguay, Argentina (2010-2012). Un enfoque biocultural
Authors: Bergel Sanchís María Laura , Cesani María Florencia , Oyhenart Evelia Edith
Published: January 2017

Objetivo: Indagar a) si existen diferencias en las condiciones de vida estimadas a partir de variables socio-económicas, entre familias con niños de 3 a 6 años de edad, residentes en zonas urbana, periurbana y rural del departamento de Villaguay, Entre Ríos, Argentina; y b) en caso de haberlas, si esas diferencias se expresan en el estado nutricional infantil y en la percepción de inseguridad alimentaria en los hogares (PIAH) (en lo que respecta al acceso). Población y Métodos: El estudio fue de tipo transversal e incluyó 303 niños de 3 a 6 años de edad. Para el estudio antropométrico se tomaron peso corporal y estatura, y se empleó la referencia The Third National Health and Nutrition Examination Survey (Frisancho, 2008) para determinar los indicadores de estado nutricional. La información socio-económica se relevó mediante una encuesta semiestructurada, mientras que la PIAH se obtuvo a partir de la encuesta propuesta por la Academia para el Desarrollo Educativo. Ambas encuestas fueron completadas por los padres de los niños medidos antropométricamente. Resultados y Conclusiones. En general se observó que las poblaciones estudiadas presentaron diferencias socio-económicas en relación con el nivel educativo y empleo paterno y materno, hacinamiento crítico, cobertura de salud, entre otras; estas diferencias se expresarían en la distribución diferencial de la malnutrición infantil y de la percepción de las limitaciones que los padres manifestaron tener a una buena alimentación tanto en términos de cantidad como de calidad.
A hybrid algorithm for the robust graph coloring problem
Authors: Mora-Gutiérrez Román Anselmo , Ramírez-Rodríguez Javier , Rincón-García Eric A. , Ponsich Antonin , Laureano-Cruces Ana Lilia
Published: January 2017

A hybridalgorithm which combines mathematical programming techniques (Kruskal’s algorithm and the strategy of maintaining arc consistency to solve constraint satisfaction problem “CSP”) and heuristic methods (musical composition method and DSATUR) to resolve the robust graph coloring problem (RGCP) is proposed in this paper. Experimental result shows that this algorithm is better than the other algorithms presented on the literature.
Simplificación del gradiente de la función de máxima verosimilitud del análisis factorial confirmatorio
Authors: Rojas-Torres Luis
Published: January 2017

En este artículo se presenta el proceso de simpliﬁcación del gradiente de la función de máxima verosimilitud, utilizada en la estimación del Análisis Factorial Conﬁrmatorio. El gradiente obtenido se presenta en función de las matrices tradicionales del AFC: Λ, Φ y Θε (coeﬁcientes de regresión, varianzas de las variables latentes y varianzas de los errores). Esta simpliﬁcación se realizó mediante las leyes de derivación de matrices y permitió obtener una expresión para el gradiente de fácil programación.
Comparison of mast Burkholderia cepacia, ashdown + gentamicin, and Burkholderia pseudomallei selective agar for the selective growth of Burkholderia spp.
Authors: Edler Carola , Derschum Henri , Köhler Mirko , Neubauer Heinrich , Frickmann Hagen , Hagen Ralf Matthias
Published: January 2017

Reliable identification of pathogenic Burkholderia spp. like Burkholderia mallei and Burkholderia pseudomallei in clinical samples is desirable. Three different selective media were assessed for reliability and selectivity with various Burkholderia spp. and nontarget organisms.

Mast Burkholderia cepacia agar, Ashdown + gentamicin agar, and B. pseudomallei selective agar were compared. A panel of 116 reference strains and well-characterized clinical isolates, comprising 30 B. pseudomallei, 20 B. mallei, 18 other Burkholderia spp., and 48 nontarget organisms, was used for this assessment.

While all B. pseudomallei strains grew on all three tested selective agars, the other Burkholderia spp. showed a diverse growth pattern. Nontarget organisms, i.e., nonfermentative rod-shaped bacteria, other species, and yeasts, grew on all selective agars. Colony morphology did not allow unambiguous discrimination.

While the assessed selective media reliably allowed the growth of a wide range of B. pseudomallei strains, growth of other Burkholderia spp. is only partially ensured. Growth of various nontarget organisms has to be considered. Therefore, the assessed media can only be used in combination with other confirmative tests in the diagnostic procedure for the screening for melioidosis or glanders.
Micro-Photoluminescence from V-shape inverted pyramid in HVPE Grown GaN Film
Authors: Lee Chao-Kuei , Chen Y-B , Chang Shu-Chen , Pan Ci-Ling , Wang S. C.
Published: January 2017

We report the room-temperature micro-luminescence images from V-shaped inverted pyramids in undoped GaN films grown on (0001) sapphire substrate by hybrid vapor phase epitaxy. As the excitation laser spot at 325 nm was translated from the surface toward the center of the inverted pyramid along its slope, the center wavelength of the PL peak shows a trend of monotonic red-shift of from 373.9 nm to 379.1 nm. This could be attributed to the 3-dimensional release of stress and associated decrease of build-in piezoelectric field in the V-defects. A distinct and strong emission at 386.7 nm was observed at the apex of the V-defect. This could be originated from the threading dislocation at the onset of the defect.
Growth of Gan on Porous Sic Substrates by Plasma-Assisted Molecular Beam Epitaxy
Authors: Inoki C. K. , Kuan T. S. , Lee C. D. , Sagar Ashutosh , Feenstra R. M.
Published: January 2017

We have explored the growth of GaN on porous SiC substrates by plasma-assisted molecular beam epitaxy. The porous 4H- and 6H-SiC(0001) substrates used in this study contain 10 to 100-nm sized pores and a thin skin layer at the surface. This skin layer was partially removed prior to the growth by H-etching. Transmission electron microscopy (TEM) observations indicate that the epitaxial GaN growth initiates from the surface areas between pores, and the exposed surface pores tend to extend into GaN as open tubes and trap Ga droplets. Plan-view TEM observations indicate that the GaN layers grown on porous substrates contain fewer dislocations than layers grown on non-porous substrates by roughly a factor of two. The GaN layers grown on a porous SiC substrate were also found to be mechanically more relaxed than those grown on non-porous substrates; electron diffraction patterns indicate that the former are free of misfit strain or are even in tension after cooling to room temperature.
Dislocation reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy
Authors: Smith David J. , Huang Daming , Reshchikov Michael A , Yun Feng , King T. , Morkoç Hadis , Litton Cole W
Published: January 2017

We have investigated a novel approach for improving GaN crystal quality by utilizing a stack of quantum dots (QDs) in GaN grown on sapphire substrates by molecular beam epitaxy. The GaN films were grown on GaN/AlN buffer layers containing multiple QDs and characterized using x-ray diffraction, photoluminescence, atomic force microscopy, and transmission electron microscopy. The density of the dislocations in the films was determined by defect delineation wet chemical etching and atomic force microscopy. It was found that the insertion of a set of multiple GaN QD layers in the buffer layer effectively reduced the density of the dislocations in the epitaxial layers. As compared to a density of ∼1010cm-2in typical GaN films grown on AlN buffer layers, a density of ∼3×107cm-2was demonstrated in GaN films grown with the QD layers. Transmission electron microscopy observations confirmed termination of threading dislocations by the QD layers.
Self-assembled quantum dots and nanoholes by molecular beam epitaxial growth and atomically precise in situ etching
Authors: Kiravittaya S. , Songmuang R. , Schmidt O. G.
Published: January 2017

Ensembles of homogeneous self-assembled quantum dots (QDs) and nanoholes are fabricated using molecular beam epitaxy in combination with atomically precise in situ etching. Self-assembled InAs QDs with height fluctuations of ±5% were grown using a very low indium growth rate on GaAs (001) substrate. If these dots are capped with GaAs at low temperature, strong room temperature emission at 1.3 νm with a linewidth of 21 meV from the islands is observed. Subsequently, we fabricate homogeneous arrays of nanoholes by in situ etching the GaAs surface of the capped InAs QDs with AsBr3. The depths of the nanoholes can be tuned over a range of 1-6 nm depending on the nominal etching depth and the initial capping layer thickness. We appoint the formation of nanoholes to a pronounced selectivity of the AsBr3 to local strain fields. The holes can be filled with InAs again such that an atomically flat surface is recovered. QDs in the second layer preferentially form at those sites, where the holes were initially created. Growth conditions for the second InAs layer can be chosen in such a way that lateral QD molecules form on a flat surface.
Effect of the internal electric fields in Quantum Dot laser structures grown by Metal Organic Chemical Vapor Deposition
Authors: Passaseo A. , Maruccio G. , Vittorio M. De , Rinaldis S. De , Todaro T. , Cingolani R.
Published: January 2017

By means of a systematic study carried out on In0.5Ga0.5As/GaAs quantum dot electroluminescent devices grown by Metal Organic Chemical Vapor Deposition, we show that the combination of internal electric fields in such structures dramatically blue shifts the emission wavelength with respect the photoluminescence emission that occurs at the expected value of 1.3 νm at room temperature. By comparing photoluminescence (PL), electroluminescence (EL) and photocurrent (PC) measurements in In0.5Ga0.5As QD structures emitting between 1.28 νm and 1.4 νm (at 300 K), we demonstrate that the electric field associated to the built-in dipole in the dots, directed from the base of the dots to their apex, and the device junction field (when parallel to the dipole field) lead to the depletion of the ground state. As a consequence, structures grown on n-type GaAs substrates exhibit electroluminescence only from the excited states. Instead, by growing the same device structure on p-type GaAs substrates, i.e. by reversing the direction of the built-in electric field of the device, the effect of the permanent dipole is strongly reduced, thus allowing us to obtain EL emission at the designed wavelength of 1.3 νm at 300 K, coincident to the PL. The consequence on the achievement of efficient lasing in the spectral region of interest for optical transmission. are illustrate.
Defect free InGaAs-based strain balanced MQW grown on virtual substrate by metallorganic chemical vapor deposition
Authors: Passaseo A. , Cingolani R. , Mazzer M. , Lomascolo M. , Tundo S. , Lazzarini L. , Nasi L. , Salviati G. , Barnham K.W.
Published: January 2017

In this work we describe a novel system for photovoltaic applications which combines InGaAs based strain-balanced multiple quantum wells (MQWs) with a “virtual substrate”, designed to extend the absorption edge of the photovoltaic devices to about 1 eV. The virtual substrate is designed by properly choosing a sequence of InGaAs layers having different In content, in order to obtain the desired lattice parameter at the topmost layer and to confine at the deepest interfaces the misfit dislocations, well away from the QW active region.

A series of InGaAs p-i-n junctions, containing a strain balanced MQW in the intrinsic region, were deposited by metallorganic chemical vapor deposition on different virtual substrates. In all the samples the virtual substrates were proved to be successful to grow zero net strain MQW and to confine defects at the buffer/substrate interface. Transmission electron microscopy observation shows that no defects propagate from the strain accommodating layers to the active region. The total density of threading dislocations reaching the surface was found to be less than 1*E5/cm2.

The confined misfit dislocation network, however, results in marked cross-hatched morphology that was found to affect the lateral strain distribution in the whole structure. By optimizing the growth condition of the structures, the influence of the surface roughness induced by CH pattern is partially suppressed.
Materials for Solid State Lighting
Authors: Johnson S.G. , Simmons J. A.
Published: January 2017

Dramatic improvement in the efficiency of inorganic and organic light emitting diodes (LEDs and OLEDs) within the last decade has made these devices viable future energy efficient replacements for current light sources. However, both technologies must overcome major technical barriers, requiring significant advances in material science, before this goal can be achieved. Attention will be given to each technology associated with the following major areas of material research: 1) material synthesis, 2) process development, 3) device and defect physics, and 4) packaging.

The discussion on material synthesis will emphasize the need for further development of component materials, including substrates and electrodes, necessary for improving device performance. The process technology associated with the LEDs and OLEDs is very different, but in both cases it is one factor limiting device performance. Improvements in process control and methodology are expected to lead to additional benefits of higher yield, greater reliability and lower costs. Since reliability and performance are critical to these devices, an understanding of the basic physics of the devices and device failure mechanisms is necessary to effectively improve the product. The discussion will highlight some of the more basic material science problems remaining to be solved. In addition, consideration will be given to packaging technology and the need for the development of novel materials and geometries to increase the efficiencies and reliability of the devices. The discussion will emphasize the performance criteria necessary to meet lighting applications, in order to illustrate the gap between current status and market expectations for future product.
Influence of Defects on Current Transport in GaN/InGaN Multiple Quantum Well Light-Emitting Diodes
Authors: Cao X. A. , Stokes E. B. , LeBoeuf S. F. , Sandvik P. M. , Kretchmer J. , Walker D.
Published: January 2017

We have studied the electrical and optical characteristics GaN/InGaN based light-emitting diodes (LEDs) grown on sapphire using metalorganic chemical vapor deposition (MOCVD). Strong correlation has been found between material quality and the mechanism of current transport through the wide-bandgap p-n junction. Tunneling behavior dominates throughout all injection regimes in the devices with high-density defects in the space-charge region, which act as deep-level carrier traps. The approximately current-squared dependence of light output at low currents indicates dominant nonradiative recombination in the active region. However, in a high quality LED diode, tunneling current is only a major contributor at low forward biases. At moderate biases, temperature dependent diffusion-recombination current has been identified as I0 exp(qV/1.6kT). In these devices, nonradiative recombination centers are saturated at current densities as low as 1.4×10-2 A/cm2.
Electrical and Optical Characteristics of Isoelectronic Al-doped GaN Films Grown by Metal Organic Chemical Vapor Deposition
Authors: Lee Jae-Hoon , Kim Jong-Hyun , Ko Hyun-Min , Bae Sung-Bum , Lee Kyu-Suk , Cho Yong-Hoon , Hahm Sung-Ho , Lee Yong-Hyun , Lee Jung-Hee
Published: January 2017

The effects of the isoelectronic Al-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to 500 cm2/Vs for the sample grown at a TMAl flow rate of 10 νmol/min, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.
GaInNAs: A New Material in the Quest for Communications Lasers
Authors: Harris James S. , Gambin Vincent
Published: January 2017

Dilute nitride GaInNAs alloys grown on GaAs have quickly become an excellent candidate for lower cost 1.3-1.55νm vertical cavity surface emitting lasers (VCSELs) and high power edge emitting lasers in the past few years. Despite the relative immaturity and challenges of this new materials system the results have been very promising. Some of the material challenges include the limited solubility of nitrogen in GaAs, non-radiative defects that may be caused by nitrogen incorporation, and characterization of the unique set of properties nitrogen adds to this metastable alloy. In addition, a new component has been added in order to improve epitaxial growth and optical properties at wavelengths longer than 1.3νm. By adding Sb to the alloy, luminescence has been greatly enhanced between 1.3-1.6νm where normally poor quality material results. This paper describes some of the material challenges and progress in devices based on the GaInNAs and GaInNAsSb system.
Performance and Reliability of a MEMS-based tunable optical filter operating in the 1565 nm-1525 nm wavelength range
Authors: Sriram T. S. , Strauss B. , Pappas S. , Baliga A. , Jean A. , Parodos T. , Dietz D. , Wang P. , Azimi M. , McCallion K. , Vakhshoori D.
Published: January 2017

This paper describes the results of extensive performance and reliability characterization of a silicon-based surface micro-machined tunable optical filter. The device comprises a high-finesse Fabry-Perot etalon with one flat and one curved dielectric mirror. The curved mirror is mounted on an electrostatically actuated silicon nitride membrane tethered to the substrate using silicon nitride posts. A voltage applied to the membrane allows the device to be tuned by adjusting the length of the cavity. The device is coupled optically to an input and an output single mode fiber inside a hermetic package. Extensive performance characterization (over operating temperature range) was performed on the packaged device. Parameters characterized included tuning characteristics, insertion loss, filter line-width and side mode suppression ratio. Reliability testing was performed by subjecting the MEMS structure to a very large number of actuations at an elevated temperature both inside the package and on a test board. The MEMS structure was found to be extremely robust, running trillions of actuations without failures. Package level reliability testing conforming to Telcordia standards indicated that key device parameters including insertion loss, filter line-width and tuning characteristics did not change measurably over the duration of the test.
Interplay of Defects, Microstructures, and Surface Stoichiometry during Plasma Processing of GaN
Authors: Ramam A. , Tripathy S. , Chua S.J.
Published: January 2017

We have investigated optical properties of dry etched GaN using photoluminescence (PL) and micro-Raman scattering. The stoichiometry of the dry etched surface has been analyzed by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) technique has been employed to investigate the microstructures resulting from dry processing. The damage introduced by inductively coupled plasma etching has been assessed and improvement of the luminescence properties is observed during post etch annealing. The observed changes in the Raman spectra of plasma etched Si- and Mg- doped GaN can be associated with electronic and vibronic scattering mechanisms of defects.
Optical and Structural Studies of InGaN Layers and GaN/InGaN MQWs Using TPIS-MOCVD
Authors: Kim Sunwoon , Seo Junho , Lee Kyuhan , Lee Haeseok , Park Keunseop , Kim Chang-Soo
Published: January 2017

InGaN device quality films and their related heterostructures play a critical role in the development of nitride devices. InGaN growth needs to be performed at much lower temperatures than GaN growth, due to the lower dissociation temperature of InN. Furthermore, decomposition of ammonia becomes less efficient with decreasing temperature due to high kinetic barrier for breaking N-H bonds and InGaN growth needs high NH3/TMIn ratio. We investigated the optical and structural properties of InGaN bulk layers and GaN/InGaN MQWs using thermally precracked ion supplied metalorganic chemical vapor deposition (TPISMOCVD) system. The temperature range for this study was 670 -770°C. In a low NH3 flow condition, In metal droplet appeared on the surface on InGaN layer in conventional MOCVD system, but it disappeared in TPIS-MOCVD system. An increasement of In mole fraction in InGaN could be achieved even in low NH3 flow. As the NH3 flow rate and the InGaN growth temperature decreased, In metal droplet was more effectively reduced by ammonia precracking. The quality of InGaN/GaN MQWs was evaluated with high resolution XRD and TEM.
The Role of AlN Interlayer in AlxGa1-xN/GaN Heterostructures with high x from 0.35 to 0.50 Grown on Sapphire (0001)
Authors: Seo In-Seok , Lee Seung-Jae , Jang Seong-Hwan , Yeon Jeong-Mo , Leem Jae-Young , Park Yong-Jo , Lee Cheul-Ro
Published: January 2017

We report the role of thin AlN interlayer in the fabrication of AlxGa1-xN/GaN heterostructures with high x from 0.35 to 0.50 on sapphire (0001) by MOVPE. After growing the AlN interlayer of 20 nm thick on GaN/sapphire (0001) epitaxy, the AlxGa1-xN epitaxial layers of 1.0 um thick were grown on it with increasing the flow rate of TMA. The measured Al mole fractions of AlxGa1-xN/GaN heteroepitaxy grown using the thin AlN interlayer from each TCD rocking curve are 0.35, 0.37, 0.45 and 0.50, respectively. As incorporation rate of Al in the AlxGa1-xN increases, the crystallinity is getting well and the RMS values scanned by AFM of their surfaces become lower. And also, the optoelectronic characteristics of those heteroepitaxy evaluated by cathodeluminescence(CL) are improved with the increase of x. To the contrary these trends, it is usually known that crystallinity, surface morphology and optical property of the AlxGa1-xN/GaN heteroepitaxy grown without AlN interlayer between them become worse with the increase of x above 0.2. Meanwhile, electrical resisitivities of Al0.35Ga0.65N, Al0.37Ga0.63N, Al0.45Ga0.55N and Al0.50Ga0.50N epitaxy, which were grown with the thin AlN interlayer, measured by four point probing method are 13.5, 18.1, 31.7 and 36.2 Mohm-cm, respectively. These resisitivities increase by degrees in spite of the advance of characteristics with the raising of x.
Formation of thallium antimony sulfide and thallium bismuth sulfide thin films by heating chemically deposited multi-layer thin films
Authors: Estrella Verónica , Nair M. T. S. , Nair P. K
Published: January 2017

Antimony sulfide (Sb2S3) and bismuth sulfide (Bi2S3) thin films of 200 nm thickness each were deposited from aqueous baths on glass substrates. Subsequently, thin films of thallium sulfide (Tl2S) with thickness around 120 nm were deposited on to these films from a bath containing thallium nitrate, sodium citrate, sodium hydroxide and thiourea. The multilayer films of Sb2S3-Tl2S, Bi2S3-Tl2S and Bi2S3-Sb2S3-Tl2S, thus produced, were heated in a nitrogen atmosphere around 300°C. XRD studies confirmed the formation of TlSbS2, TlBiS2, Tl4Bi2S5 and TlSb3S5 compounds. Optical band gaps of these materials are 1.85 eV (TlSbS2), 0.15 eV (TlBiS2), and about 1 eV for the composite film (Tl4Bi2S5 + TlSb3S5). In the visible spectral region, the optical absorption coefficients of these materials are about 105 cm-1. Values of dark conductivity are 10-7 Ωcm-1 (TlSbS2), 10-4 Ωcm-1 for TlBiS2 and 10-6 Ωcm-1 for the composite film. All the films are photoconductive.
Novel organic, polymeric materials for electronics applications
Authors: Sabnis Ram W. , Spencer Mary J. , Guerrero Douglas J.
Published: January 2017

Novel organic, polymeric materials and processes of depositing thin films on electronics substrates by chemical vapor deposition (CVD) have been developed and the lithographic behavior of photoresist coated over these CVD films at deep ultraviolet (DUV) wavelength has been evaluated. The specific monomers synthesized for DUV applications include [2.2](1,4)- naphthalenophane, [2.2](9,10)-anthracenophane and their derivatives which showed remarkable film uniformity on flat wafers and conformality over structured topography wafers, upon polymerization by CVD. The chemical, physical and optical properties of the deposited films have been characterized by measuring parameters such as thickness uniformity, solubility, conformality, adhesion to semiconductor substrates, ultraviolet-visible spectra, optical density, optical constants, defectivity, and resist compatibility. Scanning electron microscope (SEM) photos of cross-sectioned patterned wafers showed verticle profiles with no footing, standing waves or undercut. Resist profiles down to 0.10 νm dense lines and 0.09 νm isolated lines were achieved in initial tests. CVD coatings generated 96-100% conformal films, which is a substantial improvement over commercial spin-on polymeric systems. The light absorbing layers have high optical density at 248 nm and are therefore capable materials for DUV lithography applications. CVD is a potentially useful technology to extend lithography for sub-0.15 νm devices. These films have potential applications in microelectronics, optoelectronics and photonics.
Electrical Properties of Beta-Irondisilicide/Germanium Heterojunctions
Authors: Ehara Takashi , Kokubun Yoshihiro
Published: January 2017

The electrical properties of heterojunctions composed of polycrystalline films of beta-irondisilicide and n-type germanium substrate are investigated. The heterojunctions have been prepared by co-sputtering of iron and silicon on germanium substrate followed by thermal annealing. The samples were prepared over various annealing temperature and chemical compositions. Most of the samples showed rectifying characteristics in current-voltage characteristics measurement. However, large backward leakage current was observed. The result is consistent with that in the case of beta-irondisilicide/silicon heterojunctions. In addition, the leak current showed significant dependence on annealing condition and chemical composition. It was suggested that the high density of trap levels existing at the interface caused by diffusion of Fe into substrate induce the inadequate electrical properties of the samples.
Cathodoluminescence and Photoluminescence of Crystaline Silicon-Epilayer Grown on Si+-Implanted (1-102) Sapphire
Authors: Park C. J. , Kwon Y. H. , Kang T. W. , Cho H. Y. , Choi S.-H , Elliman R.G.
Published: January 2017

Luminescence on Si-epitaxial layers grown on Si-implated Al2O3 ( 1102) with 30 keV Si+ to a dose of 5×1015/cm2 has been investigated. To active the implanted Si+ ions in Al2O3, the post annealing was performed at 1100°C in Ar ambiant. Also, cathodoluminescence (CL) and photoluminescence (PL) have been used to study struc Al2O3tural and optical properties of nc-Si in the Si+-implanted (1102) Al2O3 substrates. In the PL and CL spectra for Si+-implanted samples, peaks to be responsible for nanocrystalline-Si (nc-Si) appear at 316 nm (3.92 eV) and 574 nm (2.16 eV), respectively. The crystallinity of nc-Si imbeded in Al2O3 has been about 5nm in size and the dislocation aligned parallel to the (0001) planes of (1102) Al2O3, confirmed by transmission electron microscopy (TEM).
Channel-Add Operation of a Device Using Defects in a Two-Dimensional Photonic Crystal Slab
Authors: Asano Takashi , Noda Susumu , Kiyota Kazuaki , Tanaka Yoshinori , Akahane Yoshihiro , Song Bonshik , Mochizuki Masamtsu , Imada Masahiro
Published: January 2017

A channel add-filtering function of a device based on defects in a two dimensional photonic crystal slab is investigated in addition to a channel drop-filtering function reported previously. It is considered that photons irradiated to a point defect from free space are trapped by the point defect, are transferred to a line defect waveguide nearby, and are emitted from the waveguide edge. It is shown that the spectrum of the add-filtering function is almost same as that of the drop-filtering function, which demonstrates that photons can be not only dropped-from but also added-to a line-defect waveguide through the resonant trapping by point defects.
Coupled-Cavity Structures in Photonic Crystals
Authors: Bayindir Mehmet , Ozbay E.
Published: January 2017

We investigate the localized coupled-cavity modes in two-dimensional dielectric photonic crystals. The transmission, phase, and delay time characteristics of the various coupled-cavity structures are measured and calculated. We observed waveguiding through the coupled cavities, splitting of electromagnetic waves in waveguide ports, and switching effect in such structures. The corresponding field patterns and the transmission spectra are obtained from the finite-difference-time-domain (FDTD) simulations. We also develop a theory based on the classical wave analog of the tight-binding (TB) approximation in solid state physics. Experimental results are in good agreement with the FDTD simulations and predictions of the TB approximation.
Pore Etching in Compound Semiconductors for the Production of Photonic Crystals
Authors: Foell Helmut , Langa Sergiu , Carstensen Juergen , Christophersen Marc , Tiginyanu Ivan , Dichtel Karin
Published: January 2017

Ordered arrays of pores in Si provided the first (two dimensional) photonic crystals with bandgaps in the μm region. The paper explores the potential of pore etching for two- and threedimensional photonic crystals in GaAs, InP, and GaP. A striking feature of pore etching in III-V semiconductors is the strong tendency to self-organization and pattern formation. As an example, self-organized well-defined pore lattices (a = 100 nm – 1 μm) can be made in InP. All materials show self organized diameter oscillations, often synchronized over large distances between pores. Extremely strong diameter oscillations are observed in GaAs. Pores in all materials tend to grow in <111> directions, but can be induced to grow in the direction of current flow, too. These features can be used to produce two- and three dimensional photonic crystals. The latter goal might be achieved by switching periodically between different pore morphologies with depth, or by modulating the diameter with depth - always helped by the tendency to self organization. Self organization, however, will not lead to perfect crystal structures; lithographically defined nucleation is needed and has been tried. First results show that there are pronounced differences to what is known from Si. While the production of externally defined photonic crystals in the sub μm region appears to be feasible, the strong tendency to self organization must be taken into account by matching internal time and length scales to the desired external ones.
New progress on p-type macroporous silicon electrodissolution
Authors: Bettotti Paolo , Gaburro Zeno , Negro Luca Dal , Pavesi Lorenzo
Published: January 2017

We discuss fabrication of macroporous structures, both random and periodical, on p-type silicon samples by electrochemical etching using aqueous and organic electrolytes. We have obtained different lattice structures starting from an unique lithographic mask. Organic compounds used in this work were Dimethylformamide (DMF) and Dimethylsulfoxide (DMSO).
Time-resolved light propoagation at the band-edge states of 1D Fibonacci quasicrystals
Authors: Negro L. Dal , Oton C. J. , Gaburro Z. , Pavesi L. , Johnson P. J. , Lagendijk A. , Wiersma D. S.
Published: January 2017

Infrared time-resolved interferometric transmission measurements have been performed on one dimensional porous silicon Fibonacci quasicrystals, obtained by electrochemical etching a p-type Si substrate, to address experimentally the problem of light transport and localization in deterministic aperiodic structures. Coherent beatings, pulse stretching and strong pulse delay on a picosecond time scale have been measured when the laser wavelength was tuned at the onedimensional band-edge of a 233-layers Fibonacci quasicrystal where quasi-localized states exist. The observation of these dramatic pulse distortion effects demonstrates the selective excitation of very-narrow localized optical modes. One dimensional transfer matrix and scattering states simulations yield the electromagnetic field distribution inside the structure and reproduce these experimental data supporting the general conclusion about the observation of quasi-localized photonics states.
3D Photonic Crystals Fabricated by Micromanipulation Technique
Authors: Aoki Kanna , Miyazaki Hideki T. , Hirayama Hideki , Inoshita Kyoji , Baba Toshihiko , Shinya Norio , Aoyagi Yoshinobu
Published: January 2017

Three-dimensional (3D) photonic crystals with one to four layers of woodpile structures have been fabricated by stacking two-dimensional (2D) photonic plates by micromanipulation. First, air-bridge photonic plates were fabricated as unit structures using conventional IC processing techniques. Then, the 2D photonic plates were stacked using a micromanipulation system. To obtain lattices with precise periodicity, microspheres were inserted into the round openings which were prepared in the frame of the plates. Since neighboring plates have pore openings at the same position, plates were laminated at the proper position automatically. Consequently, positioning error was kept within 50 nm. Optical characteristics of the crystals were evaluated by their reflectance and transmittance at wavenumber between 700 and 7000 cm-1. The formed photonic crystals were expected to have a photonic band gap at around 3030 cm-1. As the number of layers was increased, the reflectance at around 3030 cm-1 increased to 60 %, and the transmittance at the same wavelength region decreased to 30 %.
PENYUNTIKAN HORMON GONADOTROPIN PEMIJAHAN IKAN HIAS BALASHARK (Balanthiocheilus melanopterus Blkr.)
Authors: Sugit Slamet , Asnawi Asnawi , Sanusi Sanusi
Published: January 2017

Abstrak bisa dilihat di Lampiran
PEMELIHARAAN LARVA IKAN BALASHARK (Balanthiocheilus melanopterus Blkr.) DENGAN MEDIA AIR BERBEDA
Authors: Asnawi Asnawi , Sugito Slamet , Sanusi Sanusi
Published: January 2017

Abstrak bisa dilihat di Lampiran
POLA PERTUMBUHAN BAKTERI PROBIOTIK PADA MEDIA NUTRIENT BROTH
Authors: Nurjanna Nurjanna
Published: January 2017

Abstrak bisa dilihat di Lampiran
PENDEDERAN IKAN SIDAT PADA WADAH TERKONTROL
Authors: Purwanto Joko , Bastian Tuteng
Published: January 2017

Abstrak bisa dilihat di Lampiran
TEKNIK PENANGANAN PASCAPANEN RUMPUT LAUT COKLAT, Sargassum filipendula SEBAGAI BAHAN BAKU ALGINAT
Authors: Fateha Fateha
Published: January 2017

Sargassum filipendula merupakan rumput laut coklat yang tumbuh di perairan pantai Binuangeun (Kabupaten Lebak, Provinsi Banten) yang potensial digunakan sebagai bahan baku alginat. Untuk memaksimalkan kandungan alginatnya diperlukan suatu penanganan pascapanen agar kadar dan mutu alginat dapat dipertahankan sebelum diekstraksi. Salah satu tekniknya adalah dengan mengawetkan rumput laut tersebut langsung setelah dipanen dengan menggunakan larutan KOH 0,1% untuk perendaman selama 60 menit. Perlakuan perendaman dalam larutan KOH 0,1% ini memperlihatkan nilai rendemen lebih tinggi dengan kadar air rumput laut kering lebih rendah yaitu sebesar 11,4% dan 17,8% dibandingkan tanpa perendaman (10,8% dan 18,5%), nilai CAW (Clean Anhydroweed) dan kandungan alginatnya masing-masing yaitu sebesar 63,52% dan 23,17% dibanding tanpa KOH yaitu 59,38% dan 16,7%.
The Legality and Propriety of the Trials of Abu Hamza
Authors: Arnell Paul
Published: January 2017

Abu Hamza is serving a life sentence in an American prison, having been convicted of terrorist offences in 2014. He was previously imprisoned in the United Kingdom. Two central questions arise from his case; whether the UK and US acted lawfully under international law in applying their criminal law against Hamza, and whether that application of law was appropriate. The answers to these questions are that Hamza’s subjection to legal process was of dubious legality and not completely proper. The links between the UK and the US and Hamza, be they territory, nationality or otherwise, were in some instances insufficient per se and lacking relative to third states. His case is a story of justice imperfectly done. Keywords: Legality; Proper Law; Extraterritorial Jurisdiction; Extradition; Abu Hamza
Reforming Scottish Criminal Procedure: In Search of Process Values
Authors: Ferguson Pamela R.
Published: January 2017

Recent proposals to reform Scottish criminal procedure are motivated by considerations of efficiency and accurate fact-finding, and there is little attempt to offer a normative account. This paper describes these proposals and contends that their emphasis on finding ‘the truth’ is misplaced on two distinct bases: (1) it equates erroneous acquittals to wrongful convictions, thus fails to uphold a fundamental tenet of criminal procedure, namely the particular importance of protecting the innocent against wrongful conviction; and (2) it fails to recognise the importance of non-instrumental process values which are at the heart of the adversarial criminal trial.  The paper suggests that it is only by adhering to these process values that the state maintains – and demonstrates that it maintains – its moral authority to condemn and punish offenders.Key notes: Return Directive, entry ban, illegal migrant, criminal law sanctions, crimmigration, expulsion.
The Development of Four Leading Principles of the Convention on the Rights of the Child in Vietnam´s Juvenile Justice
Authors: Nguyen Duc
Published: January 2017

The paper sheds light on the latest development of four CRC principles in the administration of Vietnam’s juvenile justice after the recent amendment of the Penal Code and Criminal Procedural Code of Vietnam. It also assesses the compatibility of the Vietnamese juvenile justice system compared to international standards elaborated by the CRC Committee. At the same time, certain issues are raised regarding the implementation of such principles in practice. Finally, concluding remarks will be provided together with recommendations on how to develop the juvenile justice system in Vietnam.Keywords: Vietnam’s juvenile justice; Children’s rights; CRC leading principles; juvenile offenders; the rights of the child; non-discrimination; best interests of the child; children’s right to life; survival and development; children’s right to be heard.
Modification of silica–alkyl phase by cationic surfactant and silica precursor
Authors: Sienkiewicz Andrzej , Krasucka Patrycja , Goworek Jacek
Published: January 2017

A new sandwich-type (silica–organic silica) composite in the form of spherical beads or irregular particles was prepared by condensation of tetraethyl orthosilicate on hydrophobic Eurospher-100 C18 and LiChrosorb RP-18 particles. The silica–alkyl composites were characterised by scanning electron microscopy, transmission electron microscopy, atomic force microscopy, nitrogen adsorption porosimetry, X-ray diffraction and thermogravimetric analysis, combined with mass spectrometry. Experimental data indicate that the long hydrocarbon chains of the initial material combined with silica, producing a sandwich-type composite. Additionally, in the surface phase, small microcrystallites of silica, exhibiting very regular pore shape and uniform pore size, were produced. The obtained hybrid material shows some unique features. The advantage of the applied synthesis route is that it gave a new organic–inorganic material which is completely wettable by water and displays the ability to absorb hydrophobic components from a binary aqueous solution. The surface properties were examined by adsorption from binary water solutions. As a model organic adsorbate, metronidazole was chosen.
Dos arbustos notables del estado de Yucatán
Authors: Miranda Faustino
Published: January 2017

Descripción de 2 especies 1 género nuevo para México
Mirandaceltis a new genus from Mexico
Authors: Sharp A.J.
Published: January 2017

In the course of many discussions concerning the flora of Mexico, the eminent botanist, Dr. Faustino Miranda, called my attention to a Mexican Celtis which was significantly different from the rest of the genus. Subsequently I have had many opportunities to examine both collections made by him and previously-collected material now filed in various herbaria. As a result of there studies of the material until now called Celtis monoica, I propose to erect a new genus to include this species and name it Mirandaceltis in honor of Dr. Faustino Miranda.
Lobelia splendens Humb & Bonpl. ex Willd., a poorly understood member of the Lobelia cardinals complex
Authors: McVaugh Rogers
Published: January 2017

In a beautifully illustrated book recently published by the University of California Press, Mason uses the name Lobelia splendens Willd. for the Californian representative of the North American cardinal-flower, Lobelia cardinalis L. Mason´s usage is consistent with that of Asa Gray, who more than 80 years ago published the treatment of Gamopetalae in the Botany of California, and is consistent with that of Jepson, but differs from that of both authors who have published general revisions of Lobelia within the last few years. Inasmuch as these authors also differ between themselve as to the proper delimitation of the taxon which is typifield by Lobelia cardinalis, a further note on this taxon seems in order.
Contribución al estudio de la vegetación de la flora en algunos lugares del norte de México
Authors: Valdés-Gutiérrez Javier
Published: January 2017

La parte centronórdica de la República Mexicana es una extensa zona cuya vegetación aparentemente es poble; sin embargo, se encuentran en ella tipos de vegetación muy característicos y de gran interés. Las condiciones climáticas y edáficas hacen difícil la vida en esta región y, como consecuencia, se han originado singulares conjuntos florísticos y extrañas formas de vida vegetal. El presente trabajo se ocupa de un recorrido, durante el cual se hicieron observaciones sobre los tipos de vegetación más notables, las plantas que los constituyen y sus relaciones con clima y suelo.
Estudio preliminar de las formas de clima en las zonas cálidas y de sus relaciones con la vegetación
Authors: Perrin de Brichambaut Guy
Published: January 2017

Muchas y muy diferentes clasificaciones, climáticas se han usado para los estudios ecológicos en la región tropical. Todas ellas resultan incompletas, ya que faltan observaciones sobre numerosos factores climáticos muy importantes. Por ello, y porque todavía las observaciones climáticas on insuficientes y muy dispersas en México, no nos será posible por el momento hacer un estudio más amplio. La clasificación adoptada en este estudio tendrá los mismos defectos que otras clasificaciones. Sin embargo, se ha intentado hacer una contribución al estudio de los climas de las zonas cálidas de México debido a que hasta la fecha las clasificaciones usadas en elte país parecen demasiado generales y no permiten entrar en comparaciones locales detalladas.
Notas adicionales para una bibliografía sobre la vegetación de Chiapas
Authors: Langman Ida K.
Published: January 2017

La vegetación de Chiapas se encuentra una Nota bibliográfica con 37 títulos de trabajos, que son de la mayor impoportancia para los que se interesen por la flora de este Estado. La lista que sigue es una adición, todavía incompleta, a la enumeración anterior. Por lo tanto, se omiten aquí trabajos citados por el doctor Miranda, que se refieren en particular en Chiapas.
Nuevas especies Anthurium de Oaxaca
Authors: Matuda Eizi
Published: January 2017

Esta especie pertenece a la sección Pachyneurium Schott, por la forma de la hoja, y es muy próxima a A. lindmanianaum Engl., especie del sur de Brasil, pero se distingue nuestra especie por las hojas más chicas, por las nervaduras primarias que apenas tienen 3 cm. de distancia y por los pedúnculos largos que exceden mucho a las hojas.
Lista preliminar de las algas marinas del litoral del estado de Veracruz
Authors: Huerta-M. Laura
Published: January 2017

En México las a lgas marinas han sido poco estudiadas, a pesar de que presenta 9219 kms. de costas, de los cuales 6608 kms. pertenecen al Océano Pacífico y el resto, 2611 kms. al Golfo de México y al Mar Caribe. Estamos identificando las algas del Golfo de México y a continuación presentamos una lista preliminar de las algas del Estado de Veracruz.
Aprovechamiento de las algas marinas
Authors: Huerta-M. Laura
Published: January 2017

En nuestro país las algas se explotan en pequeña proporción, sólo en la costa occidental de la Baja California y se exportan como materia prima para ser industrializadas en California del Norte. Estamos seguros que es uno de los países en que podría aumentarse el aprovechamiento de las algas marinas de sus costas.
Una especie epífita de Yucca de la selva Lacandona
Authors: Gómez-Pompa Arturo , Valdés Javier
Published: January 2017

Esta planta se encontró en selva alta siempre verde, sobre el tronco de un "chico zapote" (Achras sapota Linn.), a unos 20 m. del suelo.
Notas sobre el género Philodendron (Aráceas) en México
Authors: Matuda Eizi
Published: January 2017

Esta especie por su verrucosidad es parecida a Ph. verrucosum de Centroamérica y Panamá, pero tiene muchas diferencias: la verrucosidad de nuestra especie se ve corno glándulas de color blanco rosado y no en forma de pelos verrugosos, sólo se encuentran en el tercio superior del pecíolo; la espata glabra, brillante en ambas caras.
Estudio sobre algunos Tremellales de México
Authors: Lowy B.
Published: January 2017

The study of sorne jelly fungí of Mexico in this paper includes 33 species distributed in 17 genera. A new species: Exidia mexicana is described. Taxonomic keys for the Mexican fungi of this group are proposed for the first time.
Estudios acerca de árboles y arbustos de América tropical, principalmente de México
Authors: Miranda Faustino
Published: January 2017

Descripción de especies
Estudios sobre los poliporáceos de Nuevo León, II. Observaciones sobre las especies conocidas y discusiones acerca de su distribución en México
Authors: Castillo José , Guzmán Gastón
Published: January 2017

Se discuten 47 especies de Polyporaceae de Nuevo León, pertenecientes a los géneros: Poria, Favolus, Lenzites, Tramets, Daedalea, Ganoderma y Polyporus ; todas ellas, excepto P. tulipiferae y P. licnoides , fueron citadas por los autores en las claves· de la primera parte de esta serie (Castillo, Guzmán y Sepúlveda, 1969). Las especies de Fomes se han excluido, por ser objeto de otra contribución. Se incluyen además discusiones de algunas especies afines, tales como de Poyporus occidentalis Klotzsch. (de zonas tropicales de México) y P. delectans Peck (de Huasca, Hgo., por primera vez citado de México). En todas las especies se discute la distribución conocida en el país y se presentan cortas descripciones de los principales caracteres diferenciales.
Marine algae from the 1969 cruise of "Makrele" to the northern part of the Gulf of California
Authors: Norris James N.
Published: January 2017

This paper consists of an annotated list of more than 300 specimens of marine algae collected on 'Makrele' expedition. Seventy-seven species (8 Chlorophyta, 18 Phaeophyta, 51 Rhodophyta) are reported. Eight new records are noted. Lists of marine algae from each collecting station are given
Orígenes, desarrollo histórico y estado actual de los herbarios en el mundo
Authors: Medellín-Leal Fernando
Published: January 2017

Revisión sobre herbarios, historia y estado actual