bluuebunny/crossref_metadata_2025 huggingface dataset:
Overexpression of an alternative allele of carboxyl/choline esterase 4 (CCE04) of Tetranychus urticae is associated with high levels of resistance to the keto‐enol acaricide spirodiclofen
Authors: Wei Peng , Demaeght Peter , De Schutter Kristof , Grigoraki Linda , Labropoulou Vassiliki , Riga Maria , Vontas John , Nauen Ralf , Dermauw Wannes , Van Leeuwen Thomas
Published: October 2019

BACKGROUND

Spirodiclofen is an acaricide that targets lipid biosynthesis by inhibiting acetyl‐coenzyme A carboxylase. Spirodiclofen resistance in spider mites has been previously documented and was associated with overexpression of CYP392E10, a cytochrome P450 mono‐oxygenase that metabolizes spirodiclofen. However, additional mechanisms have been suggested in several studies and a carboxyl/choline esterase gene, CCE04, was shown to be overexpressed in two genetically different strains, SR‐VP and SR‐TK, both exhibiting high spirodiclofen resistance levels.

RESULTS

We identified two different CCE04 alleles in both resistant strains, CCE04SR‐VP and CCE04London, with CCE04SR‐VP being highly overexpressed. Isoelectric focusing analysis confirmed the overexpression of a single esterase isozyme, while copy number and random fragment length polymorphism analysis revealed that CCE04SR‐VP overexpression was more likely due to selection for the CCE04SR‐VP allele rather than gene amplification. Both CCE04 alleles were functionally expressed using the Pichia expression system. Functional enzyme assays revealed only limited kinetic differences between CCE04 isoforms for model substrates. In addition, inhibition/competition experiments with spirodiclofen suggested a similar interaction with both enzymes, whereas its active metabolite, spirodiclofen enol, did not inhibit enzyme activity.

CONCLUSION

Our study suggests that selection with spirodiclofen results in enrichment of a specific allele of CCE04 (CCE04SR‐VP) in two genetically independent strains, which is highly overexpressed. Based on kinetic enzyme data, however, quantitative rather than qualitative differences between CCE04SR‐VP and CCE04London seem more likely to be involved in resistance. Our findings are discussed in the light of a possible spirodiclofen resistance mechanism, with sequestration of spirodiclofen by CCE04SR‐VP being a likely hypothesis. © 2019 Society of Chemical Industry
1.2: Invited Paper: Dynamic threshold voltage compensation IGZO‐GOA circuit for AMOLED display
Authors: Xue Yan , Han Bai-Xiang , Wang Xian , Zhou Shuai , Liao Cong-Wei , Zhang Sheng-Dong , Chaw Gary , Lu Po-Yen , Wu Yuan-Chun
Published: October 2019

A dual‐gate amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT) has been proposed and designed in this work. Based on this specific structure, a technologically advanced external Vth compensation system, where Vth can be controllable by an external DC signal source, has been developed for gate driver on array (GOA). Subsequently, the working mode of this circuit was introduced. Moreover, detailed simulation has been performed to study the appropriate process window. Finally, the proposed GOA circuit exhibited stable high‐voltage output pulse, meanwhile, the lifetime showed an significant improvement with the utilization of the external Vth compensation system. It should be also mentioned that a wide pulse of 3.6ms has been obtained to sense Vth of driving TFTs in pixel circuits.
2.3: Evaluation and Reduction of Flicker with an AI Scheme in Autostereoscopic Displays
Authors: Chen Mingjun , Zhang Hantao , Liang Weitang , Dai Hanhong , Wang Shuying , Li Xiaoke , Li Kunyang , Chen Xuehao , Zhou Jianying
Published: October 2019

Flicker is one of the most prominent issues in directional backlight autostereoscopic displays. This work studies the flicker characterization over the entire screen with a high‐speed camera. The characterization method shows that it works well to adapt with the practical visual experience and it gives a global quantitative description of the flicker. An artificial intelligent scheme with motion prediction is established to reduce the flicker, which is proved to be effective.
3.1: Invited Paper: OLED Micro‐displays for VR/AR Applications
Authors: Ghosh Amalkumar , Khayrullin Ilyas , Wang Qi , Vazan Fridrich , Ali Tariq , Wacyk Ihor , Tice Kerry , Sziklas Laurie
Published: October 2019

OLED Micro‐displays with single crystal silicon (CMOS) backplane for VR and AR applications will be discussed. An overview of the OLED micro‐display market size and requirements followed by the fabrication process, as it exists today, will be first discussed. The requirement of high brightness micro‐displays for both VR and AR applications will be discussed. Recent development of a high brightness (greater than 7,000 cd/m2) full color 1920x1200 and 2Kx2K resolution OLED micro‐displays at eMagin Corporation will be discussed. The performance details of this high resolution high brightness OLED micro‐display will be presented.
3.2: Invited Paper: Solution‐Processed Organic Light‐Emitting Diode Array Integrated with Organic Thin‐Film‐Transistors
Authors: Lee Sin-Hyung , Kang Sujie , Lee Sin-Doo
Published: October 2019

We developed a solution‐processed organic light‐emitting diode (S‐OLED) array in a bank structure (BS) configuration, integrated with organic thin‐film‐transistors (OTFTs)). For the fabrication of a patterned S‐OLED with high resolution, the wettability of the BS was chemically modified by the ultraviolet ozone treatment. The S‐OLED pixels with the line width of 10 µm exhibited the excellent pattern fidelity. The device operation by the OFTs was highly durable and stable.
3.4: Applications of TFE mask‐less technology for foldable AMOLED displays
Authors: Guo Linshan , Lee HeeYol , Shen Peng , Rao Yuanyuan , Cai Yu , Huang Dan , Yan Jun , Li Jiaxin , Wang Junqiang , Cao Zhonghuan , Feng Zaiwu
Published: October 2019

Thin‐film encapsulation (TFE) for foldable AMOLED display is necessary to have good reliability and excellent bendability. TFE mask induces particles easily and crack occurs in thick TFE layer during panel bending. We developed TFE with Al2O3 layer for high water‐proof and very thin thickness, satisfying the requirement of reliability and bendability. The Al2O3 layer in TFE structure was deposited by low temperature atomic layer deposition (ALD) method, and we realized TFE mask‐less process through adapting dry‐etch parameters for Al2O3 etch, finding that BCl3 has very excellent dry‐etch selectivity between inorganic layer (SiOx/SiNx/SiOxNy) and Al2O3. Besides, we also attempted to make the organic layer of TFE acted as etch mask, and it proved to be feasible, indicating that all the TFE masks could be taken out effectively. Moreover, we proved good optic and reliability characteristics of AMOLED display with mask‐less TFE structure.
5.2: Design of Simulation Tools for Light‐field Near‐eye Displays
Authors: Han Jiajing , Song Weitao , Liu Yue , Wang Yongtian
Published: October 2019

A group of simulation tools has been developed to simulate the process of the light‐field near‐eye displays based on a micro‐structure array. We presented the developed tools were applied on the displays using two types of array, which provides display performance and depth cues using the system parameters.
10.4: Leakage‐free solution organic light‐emitting diode using ternary host with single‐diode emission area up to 6×11.5 cm2
Authors: Liao Si-Yi , Su Hsiao-Tso , Hsiao Yung-Hung , Chang Yu-Fan , Chang Chiung-Wen , Niu Mu-Chun , Meng Hsin-Fei , Yen Chun , Chao Yu-Chiang , Chang Chih-Yu , Zan Hsiao-Wen , Horng Sheng-Fu
Published: October 2019

The electrical current leakage and stability are studied for solution OLED with areas of 4.45 mm2, 3×3.2 cm2, and 6×11.5 cm2. All organic layers are deposited by blade coating and initial current leaking defects can be avoided by careful control of the coating conditions. The detrimental burning point caused by a local current short developed after long‐time operation can be avoided by reducing the operation voltage using ternary mixed host. Furthermore, the crystallization defect is reduced by the ternary host. For orange device the binary host is good enough. For area as large as 6 × 11.5 cm2 the OLED no burning point after an operation over 1600 hours.
12.1: Invited Paper: Polarization control and optical efficiency improvement of light emitted from OLED using liquid crystalline luminophores
Authors: Woo Jong-Ha , Jeong Seung-Hyun , Yu Chang-Jae , Kim Jae-Hoon
Published: October 2019

Highly circularly polarized (CP) light is generated by using a twisted conjugated polymer structure with a small amount of chiral molecules as the light emitting layer of the OLED. It is confirmed that the luminous efficiency is increased by 60% compared to the conventional OLED structure.
12.2: An Ultra‐thin Directional Backlight Auto‐stereoscopic Display
Authors: Chen Xuehao , Li Kunyan , Ding Juan , Li Xiaoke , Ding Ruijie , Liang Haowen , Zhou Jianying
Published: October 2019

An ultra‐thin directional backlight auto‐stereoscopic display system with double LCD is put forward. The system includes two display screens, among which one is used as backlight module and another as screen. Based on the directional backlight display system, a real‐time 3D display stereomicroscopy system is also presented.
17.2: Invited Paper: Design of laboratory and production machinery for thermal and UV Nanoimprint for R2R and R2P applications
Authors: Kolbusch Thomas , Exlager Thomas
Published: October 2019

The application of nanoimprinted surfaces has led to highly improved properties, increased efficiencies of printed and traditional silicon electronical as well as optical devices. While providing a giant potential market for Nanoimprint Lithography (NIL) technologies in functional coatings of screens and touchscreens for mobile devices, fast imprinting of rigid materials has led to major challenges for mass production. For this range of applications with rigid and flexible materials, Coatema has developed a highly advanced set of UV NIL lab and production machinery for both roll‐to‐roll (R2R) and roll‐to‐plate (R2P) applications. Various methods have been applied to meet the recent requirements in accuracy and production speed at the same time. Therefore, Coatema’s latest developments in manufacturing technology for large area R2R and R2P, seamless UV‐ and thermal NIL provide polymer surfaces with light‐guiding, light‐trapping, light‐diffusing or micro lens effects as well as further advanced lithography techniques.
23.2: Invited Paper: All silicon passive addressed micro‐LED displays with nanoporous Si/ITO‐free nanomesh layers as light emitting pixels
Authors: Smirnov Alexander G. , Stepanov Andrew , Bondarenko Vitaly P. , Chubenko Evgene B. , Dolgyi Alexei L. , Redko Sergei V. , Zhou Guoxiong , Zhang Yongai , Lin Zhixian , Yan Qun
Published: October 2019

In this paper, we will concentrate on the usage of novel technologies and nanostructured materials to fabricate low cost high efficient micro LED displays with unique features.
23.3: Invited Paper: Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes
Authors: Wang Qi , Liu Bin , Zhuang Zhe , Tao Tao , Xie Zili , Zhang Rong , Zheng Youdou
Published: October 2019

An excellent hybrid III‐nitride/nanocrystal nanohole light‐emitting diode (h‐LED) has been developed utilizing förster nonradiative resonant energy transfer (NRET) between violet/blue emitting InGaN/GaN multiple quantum wells (MQWs) and various wavelength emitting nanocrystals (NCs) as color conversion mediums. InGaN/GaN MQWs are fabricated into nanoholes by soft nanoimprint lithography to minimize the separation between MQWs and NCs. A significant reduction in the decay lifetime of excitons in the MQWs of the hybrid structure has been observed as a result of the NRET from the nitride emitter to NCs. The NRET efficiency of the hybrid structures is obtained from the decay curves, as high as 80%. Based on a systemic optimization for white emission indexes, a series of hybrid ternary complementary color h‐LEDs have been demonstrated with a high color rendering index, up to 82, covering the white light emission at different correlated color temperatures ranging from 2629 to 6636 K, corresponding to warm white, natural white, and cold white. The efficiency droop of hybrid LEDs was validly suppressed, which mainly resulted from the extraction of excess carrier concentrations in InGaN/GaN MQWs via the rapid non‐radiative resonant energy transfer process under the higher injection condition, revealing a great potential to realize efficient white light emitters in the future.
25.5: Applications of Electrochromic Film Technology
Authors: Wang Jian , Zhou Yan , Qiu Chengfeng , Lou Fei
Published: October 2019

Electrochromic film utilizes flexible light‐weight plastic substrate, which could be directly integrated onto the glass, transferring the standard glass to smart glass. We use semiconducting polymer as the electrochromic layer and solid‐state electrolyte. The optical properties of the semiconducting polymer can be easily adjusted by varying the molecular structure, which offers a choice of multicolors. The solid‐state electrolyte avoids the problem of leakage commonly associated with liquid electrolytes, and provides high ion‐conductivity to realize fast switching speed. All the functional materials are solution processable, which high throughput, low cost, scalable roll‐to‐roll manufacturing process can be employed to fabricate the electrochromic film, reducing the cost significantly. 50,000 switching cycles under one sun illumination is reached, demonstrating a 50‐year lifetime.
27.3: Invited Paper: Electrochemical study on wet etching of copper/molybdenum alloys in thin film transistors
Authors: Seo Jong-Hyun
Published: October 2019

As copper metallization process is widely adopted by Flat panel display industry, cost for waste treatment such as fluorine ions in copper wet etchant also dramatically increased. Reduction of fluorine ion in copper metallization process, will be a key environment friendly business issue in near future. In this paper, we developed new MoK copper barrrier layer for IGZO and LTPS application which can be easily wet‐patterned in copper wet etchant without etch residue. The effects of metal electrode on the electrical performance of back channel etching type amorphous In‒Ga‒Zn‒O thin film transistor have been studied. From secondary ion mass spectroscopy depth analysis, the detected molybdenum content on IGZO surface after wet patterning was greatly reduced by 10 times compared with pure molybdenum. In addition, MoK showed a better thermal resistance properties compared with pure molybdenum. After the MoK/copper/MoK tri‐layers were annealed at 400°C for 1 hour, the electrical resistance was decreased from 5.7 uohm‐cm to 3.2 uohm‐cm while pure molybdenum tri‐layer showed dramatic increase after thermal annealing. The reduced molybdenum residue after wet patterning also influenced the electrical properties of back channel etching type IGZO TFTs. The measured mobility lied between 10∼14 cm2/V.sec and contact resistance was about 0.5 Mohm which is comparable with reported values. The enhanced device performance and thermal stability were interpreted in terms of electron density change and intermetallic compound formation at Cu/MoK interface.
31.4: Invited Paper: Recent Development of Soluble Hole Injection Material for Printed OLED and QLED Display
Authors: Monzen Kazuhiro , Maeda Daisuke , Higashi Masayuki , Endo Toshiyuki
Published: October 2019

We are developing the soluble hole injection materials and the inks, named ELsource® that can be used as hole injection layer in OLED display. OLED display is one of optical device. Therefore, we developed the hole injection materials with optical properties necessary for that optical devices. We also developed the hole injection material with the deeper ionization potential applicable to QLED display.
31.5: Invited Paper: Solution Processable Materials for Printed OLED Displays
Authors: Yang Xi , Hu Jie , Tan Jiahui , Pan Junyou
Published: October 2019

Ink‐jet printing is the most promising manufacture technology for large area OLED displays owning to its high materials utilization and low manufacturing cost. However, the performance of solution processed OLED devices (especially the life span) is still far below the evaporated ones, which is mainly due to the lack of high performance soluble OLED materials. The traditional strategies to increase solubility of organic functional molecules usually decrease their functionalities, such as emissive efficiency and device stability. Here we demonstrate a rational strategy to improve the stability of solution processed OLED devices by introducing novel organic emissive materials and optimization of the materials system in the emissive layer.
32.1: Invited Paper: Q‐View: A Compression Technology for UHD Resolution, Low Power, and Low Cost LCOS Panels
Authors: Fung Ken , Waller Craig , Eisenbrandt Eric , Ong Hiap L. , Rost Timothy , Wong Daniel
Published: October 2019

Syndiant has successfully demonstrated its innovative Q‐View compression technology with the fabrication of a 4K UHD (3840x2160) LCOS micro‐display. The SYL2341 is a low‐power 0.55‐inch LCOS display for HMD and projector applications. Q‐View technology can be applied to higher resolutions beyond 4K, or to lower resolutions for significant reduction in die size and power consumption.
32.4: See‐Through Holographic Display for AR Application
Authors: Tseng Sze-Han , Lee Pang-Ting , Chen Cheng-Huan
Published: October 2019

A see‐through holographic display based on the concept of partial hologram has been proposed, and the influence of holographic area distribution on the reconstruction image quality has been investigated and simulated with scalar diffraction theory. The result shows that the more distributed the holographic area, the better the image quality.
34.2: Invited Paper: ZnO based transparent conductive oxides for to‐date flat panel displays
Authors: BELYAEV Victor , ABDUEV Aslan , AKHMEDOV Akhmed , ASVAROV Abil , SKVORTSOV Alexey , PLENTSOVA Darya
Published: October 2019

Promising approaches to improve electrical characteristics, chemical resistance, and thermal stability of the resistivity of ZnO‐based TCO thin films are investigated. The following ways were tested: a) gradient doping of ZnO grains into the synthesized TCO films by indium in order to create passivating coatings on the surface of the grains; b) preventing the oxygen diffusion into the films by suppressing the columnar structures formation; c) methods combining the above ones. It was found that in the ZnO‐based TCO films deposited by magnetron sputtering at temperature above 150°C under the presence of excess zinc in the reagent flow, a decrease in the porosity of the columnar ZnO films is observed after subsequent heat treatments in air. The introducing of In, Ga, Sn metals to the composition of the ZnO films contributes to the formation of thin surface oxide sub‐layers with passivation properties on the surface of the ZnO grains. The results of research clearly show that preventing the formation of a columnar structure in combination with the passivation of grain surfaces creates real prospects for expanding the areas of application of ZnO‐based transparent electrodes.
41.4: Display Panel Defect Detection Algorithm Based On Group Convolutions
Authors: Ma WeiFei , Zhang ShengSen , Zheng ZengQiang
Published: October 2019

The traditional image processing algorithm can not detect the defects in the display panel well, but the application scenarios of the mainstream deep learning detection model are mostly natural scenes, and can not be directly applied to the detection of display panel defects. Aiming at this problem, this paper proposes a display panel defect detection algorithm based on packet convolution network. The algorithm uses YOLO3 network as the basic architecture. It is aimed at the lack of training samples and the large resolution of single‐defect images in the process of defect detection in industrial display panels. By referring to the dense connection and packet convolution characteristics in the CondenseNet network model, YOLO3's backbone feature extraction network has been improved to reduce the need for the number of training samples for the test model and to speed up the prediction of a single image. Finally, through a series of improvements to the YOLO3 network, this paper proposes a special name called DPDDNet. A network model for displaying panel defect detection. The experimental results show that compared with the traditional algorithm, the proposed algorithm has fewer configuration parameters and faster prediction speed, and is more suitable for defect detection of display panels.
47.1: Invited Paper: CF process reduction technology
Authors: Lin YungLun , Zhang Yihe , Cao Wu , Liu Minggang , Chiu Chungyi , Ray Lin
Published: October 2019

This study analyzes the CF process reduction technology through BPS technology. BPS merged the BM and PS process into one step can reduce the process and enable raise the capacity of fab and reduce manufacturing cost. Due to the limitation of material and process, there are several types of BPS under development so far. We believe CS‐2 & I‐1 BPS could be the proper solution now. As well as the BPS material improvement continuously, we predict S‐3 BPS owing better design flexibility could become the best solution, especially on high resolution display.
47.4: Study on the flicker shift in FFS TFT‐LCD Mode
Authors: Shi Chengying , Cai Min , Fu Jiongliang , Wang Yiming , Qin Dandan , Xia Zhiqiang
Published: October 2019

Based on FFS TFT‐LCD panel, flicker shift with different cell materials was investigated, including lighting effect on the shift value with backlight on and off. Negative LC shifts much smaller than positive LC, even after reliability test. High resistance PI A shows a better result less than 1dB, while the low resistance PI B shift about 8dB, including introduce a DC voltage when lighting is on. However this DC can be compensated mainly by DC caused by the flexoelectric effect, which proposed a method to reduce flicker shift value with PI B. The DC caused by the flexoelectric effect is further improved by the asymmetric voltage‐transmittance (VT) curve. These studies can give the guidance for improving the flicker shift phenomenon in FFS mode.
55.2: Invited Paper: Novel R2R and Printing Technologies for Electrodes of Flexible OLED Lighting
Authors: Furukawa Tadahiro , Koden Mitsuhiro
Published: October 2019

Roll‐to‐roll (R2R) and printing technologies for electrodes of flexible OLED (Organic light Emitting Diode) lighting have been developed by the academia‐industry collaboration. The developed technologies consist of R2R vacuum depositions, R2R screen printing, R2R wet cleaning, etc., inducing innovations in fabricating technologies of flexible OLED lighting.
55.4: Developments in Fast Cleaning of Thin Films without Wrapping
Authors: Hamilton Sheila
Published: October 2019

In the display industry cleanliness of the materials used to build up the display is vital to avoid defects and most major manufacturers use rubber roller contact cleaning systems to remove any particles of contamination. As the films used in displays and backlights get thinner, this type of cleaning equipment can result in process issues relating to the wrapping of the sheets of film around the contact roller due to a variety of adhesion forces.

This paper reports the development work done on a new cleaning roller system to alter several of the factors affecting the adhesion forces between the roller and the film.

The work reported includes

• Developing a new formulation of cleaning rubber to minimise tribocharging of the film

• Development of a new functional surface for the cleaning roller to modify the Van de Waals forces between the roller and the film

• Minimising the static charge environment within the equipment

This new cleaning system can process sheets of film down to 27.5 microns thick at speeds up to 20m/min without creasing, wrapping or scratching.
56.2: Embedded Fingerprint/Image Sensor Array Panel using a‐Si TFT photo‐sensor and Four‐Mask Halftone Process Technology
Authors: Cho An-Thung , Liu Zhen , Liu Kai-jun , Yang Feng-yun , Mo Qiong-hua , Hsu James , Chen Wade , Lu York
Published: October 2019

Fingerprint recognition is becoming a familiar technology. To further foster its use, it is important to make thinner sensors, adequate for embedding in various devices including display devices. An Optical type fingerprint scanning/touch‐input flat panel is designed. The driving system is based on the passive pixel sensor (PPS) array with amorphous silicon (a‐Si) TFT technology. The embedded sensing structure of the optical sensor is using the a‐Si TFT phototransistor and four‐mask process architecture technology. The pixel density is over 500 PPI and the a‐Si TFT phototransistor sensor is high reliability by using Multi‐N+ layer in the a‐Si TFT structure.
57.1: Invited Paper: Automotive Interior Lighting: Challenges and Solutions for Uniformity
Authors: Blankenbach Karlheinz , Isele Robert
Published: October 2019

Automotive interior lighting will evolve towards 1,000+ of RGB LEDs providing display‐like orchestrated effects and living room feeling. This paper deals with “pixelated” contour lights in terms of a new automotive RGB LED system as well as advanced uniformity evaluation using the Contrast Sensitivity Function.
57.6: Stray Light Suppression for a Dual Depth HUD System
Authors: Ma Sen , Hong Tao , Shi Bingchuan , Li Dianmeng , Wu Naifu , Zhou Chunmiao
Published: October 2019

The stray light of a dual depth windshield type HUD prototype was analyzed from two aspects: the imaging quality and the heat received by the PGUs from the sun. The primary path of the stray light was found using the ray path function of Lighttools program, and stray light suppression design was performed based on the analysis results. The stray light was reanalyzed after stray light suppression design, and the results indicated that the imaging quality was improved and the heating effect on the PGUs from the sun was significantly reduced.
P‐1.1: A New Compensation Pixel Circuit with LTPO TFTs
Authors: Chen Qian , Su Yue , Shi Xuewen , Liu Dongyang , Gong Yuxin , Duan Xinlv , Ji Hansai , Geng Di , Li Ling , Liu Ming
Published: October 2019

This work presents a new pixel circuit using low‐temperature polycrystalline‐oxide thin‐film transistors (LTPO TFT) for active‐matrix organic light‐emitting diode (AMOLED) displays. The proposed circuit can compensate for the threshold voltage (Vth) variations of driving TFT. Moreover, the degradation of OLED can be reduced to a certain degree. The simulation results demonstrate that the current of OLED is independent of the Vth shifting and changes as the OLED threshold voltage. That means this LTPO circuit can improve the stability of displays.
P‐1.13: The Conductivity Modulation of Amorphous Zinc Tin Oxide Thin Film by aluminum (Al) reaction method
Authors: Wang Shenglei , Chang Baozhu , Zhang Shengdong
Published: October 2019

We propose a method to form low‐resistance amorphous zinc tin oxide thin film (a‐ZTO) by aluminum (Al) reaction method. After the optimized reaction process, a‐ZTO film exhibits a low sheet resistance of 0.71(KΩ/□). The metallic tin and the large amount of oxygen vacancies formed on the surface of a‐ZTO film contribute to the high conductivity. An optimized aluminum reaction method for fabrication of low‐resistance with high thermal stability a‐ZTO film is well demonstrated.
P‐1.15: A new optical compensation scheme for AMOLED displays with a‐IGZO TFT and a‐Si:H PIN diode
Authors: Wang Ling , Lin Yicheng , Zhu Mingyi , Xu Pan , Li Zhengliang , Wu Zhongyuan , Dong Xue
Published: October 2019

This paper proposed a new optical compensation scheme for AMOLED display based on a sensor unit in pixel. The sensor unit includes an a‐IGZO TFT, which is adopted as a switch due to its low off current, a‐Si:H PIN diode as optical sensor due to its high photoconductive gain, and a capacitor to store charges. Owing to the large off current difference under different brightness, the luminance of every pixel can be acquired by PIN sensor, and then data voltage is adjusted accordingly. The scheme is adopted in a 5 inch AMOLED display, and the results show this method can capture the pixel brightness accurately, and effectively compensate low gray level light uniformity.
P‐4.4: A design to improve the uniformity of AMOLED panel
Authors: Zhang Liuqi , Han Baixiang , Chaw Gary , Lin Xinnan
Published: October 2019

In this paper, we have proposed a method to improve the uniformity of our panel display. Through the small angle of gate signal, we have successfully improved the feedthrough status of different areas on the panel, and increased the nine‐point uniformity from 65.9 percent to 90.4 percent in low gray level. Finally, using this timing, we successfully obtained a 31‐inch display with uniform brightness.
P‐4.6: Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals
Authors: 孙研  , 周子澍  , 黄振  , 吴江滨  , 周柳江  , 程阳  , 刘金秋  , 朱超  , 刘开辉  , 王晓勇  , 王建浦  , 黄维  , 王琳
Published: October 2019

To explore new constituents in two‐dimensional materials and to combine their best in van der Waals heterostructures, are in great demand as being unique platform to discover new physical phenomena and to design novel functionalities in interface‐based devices. Herein, PbI2 crystals as thin as few‐layers are first synthesized, particularly through a facile low‐temperature solution approach with the crystals of large size, regular shape, different thicknesses and high‐yields. As a prototypical demonstration of flexible band engineering of PbI2‐based interfacial semiconductors, these PbI2 crystals are subsequently assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS2 is strongly enhanced in MoS2/PbI2 stacks, while a dramatic photoluminescence quenching of WS2 and WSe2 is revealed in WS2/PbI2 and WSe2/PbI2 stacks. This is attributed to the effective heterojunction formation between PbI2 and these monolayers, but type I band alignment in MoS2/PbI2 stacks where fast‐transferred charge carriers accumulate in MoS2 with high emission efficiency, and type II in WS2/PbI2 and WSe2/PbI2 stacks with separated electrons and holes suitable for light harvesting. Our results demonstrate that MoS2, WS2, WSe2 monolayers with very similar electronic structures themselves, show completely distinct light‐matter interactions when interfacing with PbI2, providing unprecedent capabilities to engineer the device performance of two‐dimensional heterostructures.

图 1 异质结中 PbI2引起的MoS2发光增强与WSe2发光 淬灭

figure
P‐4.7: Image Enhancement with Visual Saturation Preserving on Adaptive Histogram Model
Authors: Shi Chaochao , Jin Yufeng , Chen Yinhung , Zhao Bin
Published: October 2019

A novel algorithm based on histogram equalization (HE) is proposed, which has saturation preservation and obtain more suitable visual perception. This method can solve the problem of visual perception saturation decrease and color distortion caused by conventional histogram methods. The results show excellent performance in LDR image enhancement.
P‐5.3: Design of Amorphous Silicon Thin‐Film Transistor Gate Driver Circuit with High Reliability and Narrow Border for Middle Size Liquid Crystal Display
Authors: Ke Jhongciao , Chung Techen , Liao Chiate , Yu Chiamin , Qiao Yanbing , Zou Zhongfei , Guo Xiaojun
Published: October 2019

In this paper, an integrated hydrogenated amorphous silicon (a‐Si: H) thin‐film transistor (TFT) gate driver circuit design with high reliability and the narrow border for middle size liquid crystal display is demonstrated. The circuit design with two sets of the low‐level holding unit can increase the reliability and suppress the threshold voltage (Vth) shift of TFT in the circuit. In addition, the low‐level holding unit is floating in the Q node pre‐charge period, ensuring that the low‐level holding unit can be efficiently turn off during the selected stage working. As a result, the circuit is very stable even at the TFT Vth shift of 3V in the high‐temperature operation.
P‐5.12: Training Multi‐scale Networks for Compression Artifacts Reduction
Authors: Deng Yufan , Jin Yufeng , Chen Yinhung , Zhao Bin
Published: October 2019

Present a multi‐scale neural network for compression artifacts reduction. The optimized structure and training procedure can lower the difficulty of convergence and speed up training. Experimental results show that our network outperforms other networks, and can remove complex noise in various sizes, generating cleaner images.
P‐6.9: High‐reliability a‐Si:H TFT with Repressing Photo‐degradation on G8.6 LCDs
Authors: Chao Wei , An-Thung Cho , Hejing Zhang , Qionghua Mo , Zhen Liu , Fengyun Yang , Kaijun Liu , James Hsu
Published: October 2019

Hydrogenated amorphous silicon (a‐si:H) is still applied to the mass production in large size liquid crystal display (LCD) as the major active layer material. In this paper, we successfully fabricated high‐optical‐quality a‐si:H thin film transistor (TFT) on G8.6 LCDs. Photo‐stability of a‐si:H TFT with 4‐mask process was enhanced by restructuring the gate insulating layer (GI) structure. With using this advanced manufacturing method, the photo‐degradation of devices was repressed and the optical performance was improved.
P‐7.3: Study on Transmittance, Color Shift and Gamut of Dielectric Multi‐layers
Authors: Yi Ning-Bo , Li Li-Xia , Long Si-Bang , Yan Sen , Zhao Feng , Chiu Chung-Yi , Ray Lin , Ge Shi-Min , Li Shan , Zhang Sheng-Dong
Published: October 2019

The layered structure of SiOx and SiNx is a good candidate to be gate insulator and passivation layers in IGZO TFT. However, this complex layered structure could introduce issues of transmittance, color shift and gamut change at aperture area in single glass of TFT side.
P‐7.4: Thermal Stability Analysis of Micro‐LED arrays
Authors: Lu Bo , Jiang Fulong , Xiong Zhaobin , Wang Yan , Wei Feng , Liu Zhaojun
Published: October 2019

This paper reported the design and fabrication of an unpackaged, fine pitch, flexible and transparent micro‐light‐emitting diode (Micro‐LED) array with a blue emission wavelength. The resolution of the array was 32 × 32. The temperature distribution of the LED array is measured for analyzing the thermal stability of the LED array. The temperature uniformity of this array with regular brightness and that whether the temperature change satisfies the requirement of good temperature uniformity with different brightness are analyzed.
P‐7.5: The influence of gamma on image quality assessment
Authors: Junyi Wang , Feixia Wang , Xiaohua Li , Yan Tu , Xianrong Liu , Yuling Gao , Youliang Tian , Yuzhen Dong , Yedong Wang , Weidong Liu
Published: October 2019

Gamma curve is a mapping relationship between the electrical signal of the display image and the output optical signal, which is very important in production. Manufacturers can achieve the visual effect of displays they want. Therefore it is meaningful to explore the influence which gamma curve has on image quality. This paper is aimed at measuring gamma's JND (Just Noticeable Difference) of LCD display by perceptual experiment, establishing image quality assessment model containing gamma based on JNDs and figure out the contribution of gamma on image quality.
P‐7.6: Analysis between Subgap Density of State and NBIS of Top Gate a‐IGZO TFTs
Authors: Han Ying , Gu Pengfei , Liu Fengjuan , Liu Wei , Wang Ling , Zhang Xing , Lin Yicheng , Sun Hongda , Song Young Suk , Ning Ce , Yuan Guangcai , Wu Zhongyuan
Published: October 2019

Subgap density of states (DOS) in amorphous‐InGaZnO4(a‐IGZO) influence the electrical property of TFT. In this paper, the donor‐like defects are extracted by using a technique based on monochromatic photonic capacitance voltage technique (MPCV). A white light source is used, which is different from MPCV. The result by contrastive analysis between DOS and NBIS, showed that the donor‐like defects (gD) were strongly correlated to NBIS. This techique can be used in analyzing the electrical properties of TFT.
P‐7.7: Polarization Diffractive Waveplate as a Base of Circular Dichroism Meter
Authors: Margaryan Hakob , Hakobyan Nune , Tabiryan Nelson , Belyaev Andrey , Belyaev Victor
Published: October 2019

Circular dichroism (CD) is an important parameter, characterizing optically active medium. The devices for CD measurements presented on today market measures CD in wide spectral range. The high‐precision standard optics, electronics and optomechanics are used in these devices, and data processing requires the application of a complex mathematical apparatus. These devices are quite expensive, have large dimensions, require specially trained staff, and measurement duration is tens of minutes. In this work we present a device for CD measurement on only one wavelength, the key element of which is polarization diffractive waveplate, the optical element of new generation. Device has a number of advantages: easy to use, compact, working in real time, and low cost. These advantages make it ideal for educational programs.
P‐7.8: Study on Temperature Sensing of Red Micro‐LED
Authors: Wang Yan , Lu Bo , Zhanghu Mengyuan , Liu Yibo , Liu Zhaojun
Published: October 2019

In the recent years, Micro‐LED has caused the enthusiastic attention of the society. There are some research groups studying the blue and green Micro‐LED, while a little researcher focused on the characteristic of red light. This paper inctroduces the temperature sensing of 100 µm × 100 µm red Micro‐LED. We study the temperature sensing of red Micro‐LED by test the I‐V curve with a temperature range covers ‐150 °C to 150 °C. The study will broaden our understanding of the characteristics of red LED and make it more widely used.
P‐8.5: An 8K image processing optimization system based on double FPGA chip
Authors: LIYANFU  , GENGLIHUA  , MAXITONG  , LENGCHANGLIN  , DUANRAN  , WUCONGRUI
Published: October 2019

8K Ultra‐High Resolution Display (UHD) system has attracted more and more attention due to its high definition and super sense of presence. In the immature stage of 8K ASIC, using FPGA(Field Programmable Gate Array) for image processing is undoubtedly the most suitable solution.The system adopts two cost‐effective FPGA chip schemes, which do not need to add additional video protocol conversion chip, and uses HDMI2.0 interface IP inside the FPGA to receive video. On this basis, through code optimization, a set of simplified system architecture is built to realize the processing and transmission of 8K and 4K signal sources. The most important feature of the system is to make full use of the energy efficiency of each FPGA chip, and to maximize the savings of board size. The main module of the system include LVDS receiving module, pixel edge transmission module, color space conversion module, image upscaler module, image color processing module, image format conversion module and so on. The main and difficult technologies involved include LVDS interface protocol, v‐by‐one interface protocol, DDR3 reading and writing, HDMI2.0 and v‐by‐one IP fusion technology. This paper will explain the system framework and the function of each module, and focus on the key technologies. At the end of the paper, the resource utilization of the chip are listed.
P‐9.6: Highly Luminescent Blue Quantum Dots Light‐Emitting Diodes
Authors: Wang Fuzhi , Sun Wenda , Tan Zhan'ao
Published: October 2019

A better charge balance is realized for blue quantum dot light‐emitting diodes (QLEDs) through doping the charge transport layer (CTL) to improve hole injection and suppress redundant electrons. High performance blue QLEDs were achieved by fine‐tuning the charge balance within the emitting layer.
P‐9.12: Status and trends for electroluminescent quantum dots
Authors: Mukish Pars , Virey Eric , Bouhamri Zine
Published: October 2019

This presentation will provide an overview of Electroluminescent Quantum Dot (EL‐QD) technology, through the prism of our patent landscape analysis, to point out the key players, the technical choices and the specificities they focus on?
P‐9.13: A Vertical Type Photodetector Based on All‐inorganic Perovskite Quantum Dots
Authors: Yan Shikai , Zhang Xu , Li Qing
Published: October 2019

In this work, the vertical type photodetector (PD) based on CsPbBr3 QDs with a structure of indium tin oxide (ITO)/ zinc oxide (ZnO)/ CsPbBr3 QDs/ Au is reported. In this device, the ZnO layer acts as a buffer layer, which can improve the uniformity and surface coverage of the CsPbBr3 QDs film to eliminate the current leakage. As a result, the on/ off ratio, D* and rise time (decay time) of CsPbBr3/ZnO hybrid PD is measured to be 2.2x104, 1.06x1011 and 62ms (82ms) under low reverse bias. This work inspires the development of vertical type photodetectors based on the all‐inorganic perovskite quantum dots.
P‐11.1: Pixel Design Solutions for Transmittance Improvement in 8K VA LCD
Authors: Zhang Yinfeng , Li Xuan , Zhang Yihe , Cao Wu , Zhang Qi , Lin Yunglun , He Jhenwei , Chiu Chung-yi , Lin Ray , Zhang Min
Published: October 2019

The transmittance loss with development of UD and low frame rate to 8k and high frame rate in high‐specification display has been an increasing urgency. Attempts have been made through domain reduction design to improve the transmittance and positive feedback has been received in the 65 inch and 75 inch 8k VA LCDs. Some variable domain designs are furthermore demonstrated to be impressively effective to modify the dark fringe and contribute to the transmittance improvement. A representative display sample adopting domain reduction design is displayed.
P‐11.2: The analysis of light‐leakage under the large viewing angle for LCD
Authors: Li Zhendong , Guo Lei , Dai Ke , Liao Yanping , Ma Rui , Li Chengmin , Wang Zhangtao , Shao Xibin
Published: October 2019

In the liquid crystal display, IPS or FFS display modes are widely used for its excellent performance. However, the edge electric field between the Data line and the pixel or com electrode generates a tilt angle to the liquid‐crystal molecules, which will cause of light‐leaking under the large viewing angle. In this paper, we analyze the principle of the phenomenon and its influencing factors through simulation.
P‐11.3: Mechanism Analysis of Wide Color‐gamut TFT‐LCD's Light‐caused Green Mura
Authors: Dong Wang , Si-kai Zhang , Ji-yu Wan , Wei-tao Chen , Jian-feng Yuan
Published: October 2019

The wide color‐gamut TFT‐LCD is easy to appear green mura after illuminated by various lights, and seriously affect the visual result of TFT‐LCD. By studying the electrical‐optical properties of color resin, the results show that Phthalocyanine type of G pigment in green color resin is the main factor of green mura, and the mura degree is strongly associated with the content of the G pigment. Such pigment has conjugated structure and semiconductor property. Electron migration in light state leads to the increase of dielectric loss factor and the influence of the coupling electric field of TFT‐LCD, which leads to the different brightness of RGB pixel, and forms the green mura. High sensitivity photo‐initiator in color resin can improve green mura of TFT‐LCD, but the degree of improvement is very limited. The novel pigment G can reduce the proportion of G to Y in green resin and show the best green mura result. Through mechanism analysis and experimental verification of the green mura of TFT‐LCD, the component management standard of color resin material is established, and the evaluation system of the green mura of TFT‐LCD is also set up.
P‐11.7: Study of Off‐axis Contrast Ratio Improvement for HDR display
Authors: Lim Yirang , Lee Jaehyun , Kim Kyungil , Park HyeJeong , Lee DaeHeung , Lee Dong-Jin , Kim GwangTae , Park JeongKi
Published: October 2019

We have designed a new compensation film on the basis of the analyses of optical path in various compensation film structures and optimization of optical path in each compensation structure. This newly developed compensation film dramatically increased the off‐axis contrast ratio up to 300:1 by the minimization of off‐axis black light leakage and realized halo‐free display for HDR display.
P‐11.10: Active Switching of Photonic Nanojet
Authors: Du Bintao , Xia Jun
Published: October 2019

We exhibit a three‐dimensional (3D) photonic nanojet (PNJ) based on a dielectric microsphere irradiated by a plane wave with the finite‐difference time‐domain (FDTD) method. The influence of surrounding refractive index on PNJ using the FDTD is demonstrated. Furthermore, We propose a switchable PNJ created by a polystyrene (PS) microsphere with nematic liquid crystals (NLCs) surrounded. The orientation of the LC molecules can be controlled by the application of external magnetic field. Our FDTD simulation results show that the PNJ can be switched on and off by modulating the refractive index of the NLCs. The combination of PNJ and NLCs is extremely useful to fabricate integrated optical devices.
P‐13.7: Top‐Emitting White OLEDs with Micro‐cavity for Ultra‐Low Power Consumption Display
Authors: Wang Linlin , You Juanjuan , Yan Guang , Wu Chang-Yen , Shen Yongqi , Song Wenfeng , Bo Bin , Quan Wei , Shih Huai-Ting , Wu Zhongyuan
Published: October 2019

We propose an improved 3‐stacked top emitting white organic light emitting diode (WOLED) structure comprised of layers emitting blue fluorescence and green and red phosphorescence and with micro‐cavity. Three colors are distributed in three stacks connected with CGL (Charge generation layer) and we have proved that different sequences of three colors shows different performances. We have finally determined one structure enables further enhancement in efficiency and reduction in power consumption of OLED. Although this method reduces the efficiency of blue emission, the overall power consumption is 18% lower than that of the traditional BYB device structure.
P‐13.12: The Lifetime and Yield Improvement by Plasma Treatment to Anode Surface in Active Matrix Organic Light Emitting Diode Display
Authors: Zhu Yangjie , Zhou Zhiyi , Xu Lei , Chen Hao
Published: October 2019

The active matrix organic light emitting diode (AMOLED) display industry has been undergoing rapid development and increasing competition as heavy investment enters the industry continuously. The performance and yield of one company’s products, closely related to OLED device fabrication process, are the critical factors to its core competence [1]. Here, the lifetime and Mura defects could be improved simultaneously by introducing plasma treatment to anode surface of array driver circuit were proved. The lifetime was increased at least 50% and the Mura defects caused by residue on anode surface were decreased at least 75%. Also, the effects of different kinds of plasma gas, pure O2 and mixture of SF6 and O2 were compared and the mechanism was discussed. Our work demonstrated that the plasma treatment to anode surface before organic materials evaporated was beneficial and necessary to enhance the product performance of AMOLED display.
P‐16.7: Optical human‐machine interaction based on sub‐wavelength gratings
Authors: Wang Chengliang , Wang Haoyu , Fu Yifei , Ren Huiling , Huang Xinran , Wu Bisheng , Jiang Shuai , Zheng Jun , Ye Zhicheng
Published: October 2019

Optical signals input from a light source are used as media for human‐machine interaction via the coupling of sub‐wavelength gratings covered on the display screen. The system includes a laser pen, a transparent sub‐wavelength grating optical film which couples the incident light into waveguide, and photodetectors set on the sides of the film to sense and decide the position of incident light. Furthermore, we can load the modulated signal on the incident light so that it can transfer data to the display device. The design provides a novel remote ‘touch’ interaction which is of great practical meaning in the large screen displays.