bluuebunny/crossref_metadata_2025 huggingface dataset:
CMOS Integrated Circuit Analysis Using Superconducting Nanowire Single-Photon Detectors
Authors: Chowdhury Ravin A. , Chiles Jeff , Cage Brandon , Khan Saeed , Mirin Richard P. , O'Loughlin Ryan , Stevens Martin J. , Shainline Jeffrey M.
Published: October 2024

Time-resolved emission microscopy (TREM) enables non-intrusive failure analysis of integrated circuits through photoemission detection at picosecond resolution. While photoemission occurs in both functional and faulty ICs, certain emission patterns distinctively indicate device defects. The primary mechanism driving this phenomenon is hot carrier luminescence in silicon, where carriers with excess kinetic energy release photons through intraband transitions. In CMOS logic, these emissions occur when MOSFETs switch between logical states, generating drain-to-source current flow. However, modern large-scale ICs present unique challenges for photoemission analysis: their lower operating voltages and reduced switching currents result in fewer photon emissions, predominantly in the infrared spectrum. We address these limitations by implementing superconducting-nanowire single-photon detectors (SNSPDs), enabling high-sensitivity photoemission microscopy for advanced IC failure analysis.
Solving Complex Electrical Fault Isolation Challenges with Innovative DFT Strategies
Authors: Endrinal Lesly , Kinger Rakesh , Pradeep Wilson , Mittal Shruti , Saujauddin Jehan , Ho Sean , Suri Jyotika , Chittora Atul , Kassab Mark , Orlando Peter
Published: October 2024

As System-on-a-Chip (SoC) continues to increase in complexity, multiple functionalities are being integrated into one integrated circuit (IC). This requires optimization of Design-for-Testability (DFT) strategies to minimize test time while still ensuring full test coverage of the entire chip. It has led to the widespread adoption of Tessent Streaming Scan Network (SSN) architecture on advanced technology nodes. Unlike traditional scan architectures that send data directly to the scan chains, SSN breaks down the data into packets and optimizes the delivery of these packets to allow efficient, concurrent testing of any number of cores. However, SSN presents a challenge for failure analysis, as it becomes extremely difficult to directly modify the SSN patterns on the fly to create a stimulus that will be used for many of the electrical fault isolation (EFI) techniques such as Laser Voltage Imaging (LVI) and Probing (LVP), Dynamic Laser Stimulation (DLS) and Photon Emissions Analysis (PEM). Key challenges include the inability to loop test patterns, run periodic sequences and no visibility of the scan control and clock signals, since these signals are internally generated by the SSH during retargeting. This paper introduces a new Tessent DFT enhancement developed by Siemens called the “LVX mode”. It is the first feature designed to enable Failure Analysis within a DFT tool, utilizing specific DFT hardware for implementation. In addition, another DFT feature which enables writing special pattern annotations that will indicate the start and end of a capture window and the location of all the capture pulses within that window for a particular pattern will also be presented, together with a methodology that will enable static Photon Emissions on SSN patterns. Since on-the-fly modification of the patterns is not possible in SSN, this paper will present two methods that would allow for a more effective and efficient DLS looping. Lastly, the paper will showcase multiple use cases that demonstrate the effectiveness of these identified DFT enhancements for FA.
Identification and Characterization of Conductive Dislocations in p-GaN/AlGaN/GaN Heterojunctions on GaN-on-Si Substrates
Authors: Stabentheiner M. , Tilly D. , Schinnerl T. , Taylor A.A. , Javernik P. , Novak M. , Ostermaier C. , Pogany D.
Published: October 2024

We present a study of dislocation conductivity under forward bias in p-GaN/AlGaN/GaN heterojunctions on a GaN-on-Si substrate, which are part of every p-GaN HEMT structure. Conductive atomic force microscopy (C-AFM) is combined with structural analysis by scanning transmission electron microscopy (STEM) and defect selective etching (DSE). The density of conductive TDs was found to be 5 × 106 cm-2, using semi-automatic measurements to gather larger statistics on a delayered HEMT sample. IV measurements show a shift in turn-on voltage at the leakage positions. To characterize the type of the conductive TDs, DSE with a KOH/NaOH melt was used. Three distinct etch pit sizes were observed after 5 s etch time, with large, medium and edge pits according to STEM characterization seemingly corresponding to screw, mixed and edge TDs, respectively. However, characterization by DSE etch pit size alone was found to be unreliable, as STEM TD typing of seven conductive TDs using two-beam diffraction conditions revealed mostly pure screw and mixed-type dislocations with medium-sized etch pits as origin of the observed leakage current. Our work highlights the limitations of DSE as a characterization method and recommends additional validation by STEM for each new material system, investigated layer, and etching setup. The implications of finding conductive TDs with screw-component under low forward bias conditions on device behavior and the limitations of the C-AFM method are discussed. Based on the results, it is not anticipated that the identified conductive TDs will have a substantial effect on a GaN HEMT device. Overall, this study provides important insights into the electrical properties of TDs and offers useful recommendations for future research in this area.
Increasing TEM Prep Throughput with an Extendable Manipulator Tip
Authors: Brogden Valerie , Garman Jeff , Langworthy Kurt , Wiemholt Steve
Published: October 2024

We introduce a novel piece of hardware that allows researchers to extend a nanomanipulator needle further into the vacuum chamber of a dual beam FIB SEM without venting the system. This hardware innovation will elevate throughput and diminish the instrument's downtime, which is pivotal for transmission electron microscope (TEM) sample preparation—a process integral to semiconductor manufacturers where the demand for TEM samples is high due to their necessity for process characterization and failure analysis of integrated circuits. Traditionally, the manipulator needle shortens with each sample preparation, ultimately reaching a mechanical limit that necessitates system venting to install a new needle. This hardware innovation allows users to feed out more needle length into the vacuum chamber by twisting a knob on the outside of the FIB SEM.
An Improved Backside Deprocessing Technique for Advanced IC Devices
Authors: Li Susan , Hulog Jose , Wang Zhaofeng , Sui Shixian , Zhang Ming , Andreasyan Armen , Goh Yeow Shen
Published: October 2024

A successful failure analysis not only depends on extensive electrical and physical fault isolation by using all the advanced FA tools to narrow down the possible failure site, but also relies on actual physical defect findings. For advanced IC devices with technologies approaching sub-10nm and more than 10 layers of metallization built in ultra-low k materials, finding convincing physical defects becomes increasingly challenging. Backside deprocessing to reveal the physical defects at the active circuit layers and interconnect layers have been mostly done with KOH or TMAH as bulk Si etching chemicals, and some successful results have been published in the literatures. However, some challenges are also reported using these chemicals to achieve satisfactory results. In this paper, an improved backside deprocessing technique will be discussed using a special bulk Si etching chemical, choline hydroxide, to successfully reveal the physical defects on advanced IC devices. The new technique showed advantages over the existing techniques with more predictable and reliable results for backside deprocessing work. Two case studies will also be shared to demonstrate how this improved technique has been utilized to successfully reveal the physical damage at transistor gate level on the advanced MCU devices.
Flexible Application of Multispecies Plasma-FIB in Failure Analysis Workflows
Authors: Mullen Melissa , Stokes Adam , Johnson Jared , Lam Andrew , Benson Samuel
Published: October 2024

Advanced semiconductor devices are disrupting traditional failure analysis workflows and creating demand for instrumentation that enables flexible capabilities to address these technology inflections. Such trends can be observed across multiple development areas, including faster processing, increased memory bandwidth, and power delivery. In every case, shrinking structures, complex packaging architecture, and advanced materials drive the need for efficient, precise targeting for regions of interest (ROI) over a wide range of length scales. An important example is the implementation of wide-bandgap (WBG) semiconductors, such as SiC and GaN, in advanced power devices. Various complexities are introduced, not only in device architecture, but also in defectivity analysis by conventional methods. As a result, high quality and high throughput failure analysis is achieved with specialized use of several plasma focused ion beam (PFIB) species best suited to these materials. Here we demonstrate such sample preparation for workflows involving electrical failure analysis (EFA) and localization, cross-sectional and volume analysis using scanning electron microscopy (SEM), as well as lamella preparation for transmission electron microscopy for physical failure analysis (PFA).
Etching Monitoring of Advanced Forksheet Devices Using AKONIS SIMS Tool
Authors: Robbes A-S. , Dulac O. , Soulard K. , Adier M. , Choi S. , Jacobson D. , Merkulov A. , Tilmann R. , van der Heide P.A.W. , Franquet A.
Published: October 2024

Imec has developed a fully-functional integrated forksheet field-effect transistors (FETs), which is the most promising architecture for advancing beyond the GAA (Gate-All-Around) nanosheet generation for scaling and performance improvements past the 2nm technology node. From a manufacturing perspective, forksheet devices are extremely complex to process and requires accurate and sensitive analytical instruments like the AKONIS SIMS tool.
Failure Investigation of Copper-to-Copper Bonding in Advanced 3D Packaging—From Sample Preparation to Structural Characterization
Authors: Nowakowski Pawel , Li Richard Wei-Chih , Ray Mary , Fischione Paul
Published: October 2024

This paper describes the detailed sample preparation of direct Cu-to-Cu bonding in 3D packaging between processor and memory. Different sample preparation techniques are described and compared. The sample preparation methods will then be confirmed by advanced structural characterization and strain measurement. The presence of voids and strain at the bonding interface is associated with the development of device failure.
Localization of Subtle Front-End FinFET Defects Using EBIC
Authors: Pronin Nick , Ly Khiem , Chrastecky Tony , Levenson Jacob , Yi Eric , Dickson Kris , Subramanian Sam , Serrels Keith
Published: October 2024

We demonstrate the effectiveness of combining top-down and cross-sectional electron beam induced current (EBIC) imaging with SEM nanoprobe analysis to identify subtle front-end defects in advanced FinFET technology. Our approach successfully localized a novel fin nanocrack defect that had previously eluded detection through conventional TEM imaging. This systematic resistive pMOS failure, observable only in memory arrays at 150°C, exemplifies the power of EBIC as an alternative to scanning capacitance microscopy for detecting dopant anomalies and subtle defects. The sample preparation and EBIC methodologies presented here are broadly applicable across CMOS technologies, offering a versatile approach to defect analysis.
Application of Thermal Emission Phase Lock-In Image Statistics to Locate Defects in Z-depth for Advance 2.5D Packaging
Authors: Nuez Daniel , Tan Phoumra , Lai Brian
Published: October 2024

This paper presents a novel method for determining the Z-depth location of short circuit defects in flip chip packages using lock-in thermography (LIT). The approach analyzes phase shift values from localized hot spots using the LIT system's "Image Statistics" feature, specifically focusing on phase "mean" values at specific lock-in frequencies. Through extensive testing on 2.5D stacked silicon interconnect technology (SSIT) packages exhibiting short failures, we established a strong correlation between phase mean values and the vertical location of defects. This technique's reliability was validated through both physical analysis and non-destructive verification methods, demonstrating its effectiveness as a precise diagnostic tool for complex semiconductor packages.
The Impact of TEM Analysis Temperature on Photoresist Profiles Using Cryo-FIB and Cryo-TEM
Authors: Hye Hyun Ji , Dai Yanchao , Chang Choi In , Kang Christopher H.
Published: October 2024

Photoresist (PR) profiles tend to have deformation and shrinkage with typical transmission electron microscopy (TEM) analysis method using a focused ion beam scanning electron microscope (FIB-SEM) and TEM. The elevated temperatures during sample preparation and TEM analysis are believed to contribute to these issues. This study evaluates the effectiveness of cryogenic workflow in mitigating PR profile shrinkage by employing cryo-focused ion beam (Cryo-FIB) and cryo-transmission electron microscopy (Cryo-TEM). Comparative experiments were conducted at room temperature and cryogenic conditions, demonstrating that full cryogenic workflow reduces the shrinkage of PR, bottom anti-reflective coating (BARC), and line critical dimension (CD). Our findings indicate that both the sample preparation and analysis temperatures influence PR profiles. This study highlights how the full cryogenic workflow significantly minimizes shrinkage, providing more accurate PR profile measurements.
Frequency-Tunable Current Imaging using a Quantum-Mixer Microscope Based on Nitrogen-Vacancy Centers in Diamond
Authors: Karlson Samuel , Kehayias Pauli , Schloss Jennifer M. , Maccabe Andrew C. , Phillips David F. , Wang Guoqing , Cappellaro Paola , Braje Danielle A.
Published: October 2024

Wide-field magnetic imagers using nitrogen-vacancy (NV) centers in diamond yield high-resolution images for various applications, including magnetic field imaging (MFI) of electronics. Despite the ongoing successes of this emerging technique for passively interrogating electronics components (including failure analysis troubleshooting), most of the focus has been on sensing DC and low-frequency currents, due to the technical challenges associated with measuring higher-frequency magnetic fields. Here, we overcome these existing challenges and adapt a recently developed technique for sensing MHz-frequency AC fields, a “quantum frequency mixing” approach. We demonstrate the instrument’s capabilities by imaging the current through a fabricated spiral test structure at various frequencies with a ~1 mm2 field of view. Finally, we discuss anticipated future applications in electronics interrogation and failure analysis for this imaging technique.
Wafer Level Monitoring of Optical Insertion Loss during Silicon Photonics Manufacturing
Authors: Beaudoin Felix , Hirokawa Takako , Bian Yusheng , Houghton Thomas , Lin Yarong , Shea Kenneth , Popielarski Brian , Robson Norman , Sinnott Aaron , Sapra Neil V. , Bappi Golam , Fini John
Published: October 2024

Silicon photonics has emerged as a key solution for on-chip communication to improve computational systems especially for AI workloads. Testing of such photonic integrated circuits (PICs) is key to deliver known good dies to be co-packaged with the compute IC. The recent availability of commercial photonic testers has allowed for monitoring most optical components at wafer level using vertical grating couplers. However, the measurement of optical insertion loss prior to fiber attach of edge-coupled spot size converters remains one of the significant challenges. In this article we demonstrate the use of a novel system for wafer–level optical edge-coupling insertion loss measurement. This method proved to be effective in capturing manufacturing process issues impacting insertion loss with a relatively fast turnaround time compared to fiber attach.
Failure Analysis of Liquid Cooling Setup for Hyperscale Datacenter Infrastructure
Authors: Pichumani Pradip Sairam , Yan Ting , Dillon Eoghan
Published: October 2024

Air-assisted liquid cooling (AALC) has emerged as a preferred cooling solution for data centers housing traditional air-cooled server racks, owing to its straightforward integration with existing infrastructure. However, the rising power demands of AI hardware (30-100kW per rack) and its variable computational loads generate unprecedented heat levels that challenge system reliability and uptime. Through long-term reliability testing of AALC systems, we identify and analyze unique failure mechanisms associated with liquid cooling implementations. This paper presents our findings on system vulnerabilities, details the failure analysis methodology, establishes root causes, and outlines the corrective measures implemented to enhance AALC system reliability in high-performance computing environments.
A Correlative Microscopic Workflow Powered by Artificial Intelligence to Accelerate Failure Analysis of Next-Generation Semiconductor Packages
Authors: Chang Yu-Jen , Liu Cheng-Hsin , Lin Yi-Sheng , Wang Chen-Chao , Liu Nicky , Chiu Bessy , Gu Allen
Published: October 2024

Over the past decade, the semiconductor industry has increasingly focused on packaging innovations to improve device performance, power efficiency, and reduce manufacturing cost. The recent heterogeneous integration offers an attractive solution in advanced IC packaging because it enables the integration of diverse functional components, such as logic, memory, power modulator, sensor on a single package platform. However, the adoption of the emerging structures, materials and components in advanced packages has challenged the existing fault isolation and analysis techniques. One of the major challenges is the limited accessibility to defects because fault regions are often located deep within devices. Without high-accuracy positional information of a defect, physical cross-sectioning and FIB polishing may alter or destroy the evidence of root causes. A non-destructive microscopic approach is preferred to map defective sites and surrounding structures. However, this method is limited by spatial resolution, especially for analyzing novel submicron interconnects such as fine pitch microbumps, redistribution layers (RDLs), and hybrid bonds. In this paper, we report an AI powered correlative microscopic workflow, where non-destructive X-ray imaging, FIB polishing and high-resolution SEM analyzing techniques are combined to solve the accessibility problem. Because 3D X-ray imaging may take a larger fraction of the time span over the entire workflow, a deep-learning based reconstruction method was applied to accelerate data acquisition. Several next-generation packages, fan-out wafer-level package (FOWLP) and hybrid bonds with sub 10 µm pitch, were used as the test vehicles to demonstrate the workflow performance and efficiency.
Imaging Nanoscale Electronic Changes in a Biased GaN HEMT
Authors: Hubbard William A , Regan B.C.
Published: October 2024

The transmission electron microscope (TEM) is the standard high-resolution technique for imaging microelectronics. But TEM primarily generates contrast related to the physical structure and composition of samples, giving little insight into their electronic properties. Samples must also be electron transparent, typically requiring cross-sectioning of components to nanometers-thin foils prior to imaging, which can compromise their electronic integrity. These cross section samples are also notoriously difficult to electrically connect to without surface leakage dominating transport. As a result, successful in situ electronic testing or bias-manipulation of electronic devices in the TEM is notably rare. Here we image nanoscale, bias-induced electronic changes in an electrically contacted cross section extracted from a GaN high electronmobility transistor (HEMT). The sample is prepared using a Xe+-based plasma focused ion beam (PFIB) to eliminate conducting implantation of the standard FIB ion, Ga+. Scanning TEM electron beam-induced current (STEM EBIC) imaging visualizes bias-induced changes to the device’s electronic structure during normal biasing, stressing, and after failure, all performed in situ.
A Comprehensive Approach for Post Silicon Unique Hold Time Violation Debug on Ethernet Interface Issue
Authors: Shen Lee Shen , Khei Kuan Lai , Jun Wu Jia , Lay Goh Lay , Shah Tirthak , Gupta Gaurav , Gayatri Vinay Padmanabha , Li Yuet
Published: October 2024

Unique frequency dependent hold time violation debug seen on Ethernet IP that caused at least 50% yield loss is showcased in this paper. This debug exposed the process variation issue seen, limitation in current FPGA timing sign-off methodology and design limitation that led to this rare hold time behavior. Customized ATPG patterns has become de facto for effective HVM screening including exploration of new path hold time fault pattern generation. The debug was backed by tester level and system validation debug with help from optical probing and FIB to confirm the root cause and silicon fixes required.
Concept-Proof of Lock-in OBIRCH Application for Three-Dimensional Analysis of Four-Dimensional NAND Flash Memory
Authors: Chinone Norimichi , Uchikado Akihito
Published: October 2024

The importance of three-dimensional (3D) localization capability is growing as advanced semiconductor devices go to 3D structures. An algorithm for processing lock-in OBIRCH data was developed especially for 3D/4D memory devices. The concept was tested with a simple test sample, which was confirmed to be capable of generating depth separated images.
Machine Learning for Predicting DataCube Atomic Force Microscope (AFM)—MultiDAT-AFM
Authors: Coq Germanicus Rosine , Othman El-Hassani
Published: October 2024

In nanoscience, techniques based on Atomic Force Microscope (AFM) stand as a cornerstone for exploring local electrical, electrochemical and magnetic properties of microelectronic devices at the nanoscale. As AFM's capabilities evolve, so do the challenges of data analysis. With the aim of developing a prediction model for AFM mappings, based on Machine Learning, this work presents a step towards the analysis and benefit of Big Data recorded in the hyperspectral modes: AFM DataCube. The MultiDAT-AFM solution is an advanced 2000-line Python-based tool designed to tackle the complexities of multi-dimensional measurements and analysis. MultiDAT-AFM offers visualization options, from acquired curves to scanned mappings, animated mappings as movies, and a real 3D-cube representation for the hyperspectral DataCube modes. In addition, MultiDAT-AFM incorporates a Machine Learning algorithm to predict mappings of local properties. After evaluating two supervised Machine Learning algorithms (out of the eight tested) for regression, the Random Forest Regressor model emerged as the best performer. With the refinement step, a root mean square error (RMSE) of 0.18, an R2 value of 0.90 and an execution time of a few minutes were determined. Developed for all AFM DataCube modes, the strategy and demonstration of MultiDAT-AFM are outlined in this article for a silicon integrated microelectronic device dedicated to RF applications and analyzed by DataCube Scanning Spreading Resistance (DCUBE-SSRM).
A Quantitative and Automated Quality Metric for Delayering Integrated Circuits
Authors: Padro Noah , Balint Tim , Harner Nick , Scholl Jon , Patel Yash , Sale Matt , Kimura Adam
Published: October 2024

Integrated circuit (IC) delayering is highly subjective, as operators must make process decisions based on minute details observed in optical images of the ICs. Process decisions have a strong influence on the quality of the final sample, with the result being highly dependent on an operator’s technique, skill, and experience. However, end point detection, process development, and in-process feedback all benefit from a quantitative method to evaluate results. To this end, a quality metric for IC delayering based solely on optical images has been developed. The optical images are processed into CIE-Lab color space, candidate zones are established, and color homogeneity both within and among these zones is calculated, which contribute to a final die quality score. The work done in this study takes a significant step forward in quantifying IC delayering results, which is critical for improving repeatability, reproducibility, and developing automation frameworks in these workflows.
Scanning Capacitance Microscopy Application for Top-down Sample Failure Analysis on SOI and Bulk Silicon Wafers
Authors: Tun Zin Nwe , Sweeney Ryan , Davidson Kevin , Chen Esther
Published: October 2024

Scanning Capacitance Microscopy (SCM) is an essential technique in semiconductor failure analysis. It is widely known in studies of dopant profiles and carrier concentration. Not only that, SCM can be utilized as an electrical fault isolation tool to localize a failing transistor. Compared to Conductive Atomic Force Microscopy CAFM, the main advantage of SCM is that it can be used on both Silicon on Insulator (SOI) and Bulk Silicon wafers. In addition, SCM can scan over a relatively large area in a shorter time than conventional nanoprobing methods. This paper presents case studies illustrating the effectiveness of SCM for die level top-down failure analysis on 45nm node SOI and 14nm FinFET bulk Si technologies.
Lock-in Amplifier Applications for Fault Isolation
Authors: Lee Sukho , Dickson Kristofor
Published: October 2024

This paper describes how lock-in amplifiers and boxcar averaging can overcome limitations in conventional fault isolation techniques for microelectronic testing. Our approach achieves superior results compared to traditional spectrum analyzer methods through three key applications. First, we measure the signal-to-noise ratio of individual pulses during laser voltage tracing (LVT) across varying pulse widths. Second, we leverage enhanced LVT imaging to improve computer-aided design to stage alignment and laser voltage probe placement—a crucial advancement for analyzing compressed scan and streaming scan network test failures. Finally, we present a case where our Lock-In amplifier system successfully generates pass/fail signals for dynamic laser stimulation in scenarios where conventional test hardware proved inadequate.
Implementation of FIB Automation Methodologies for TEM Applications in Memory Devices
Authors: Lee Sang Hoon , Miller Joshua-Adams , Perez Veronica , Burns Kenton , Rui Xue , Wang Shixin , Chan SookFun , Lu Ning , Wang Yun-Yu , Jin Qiang , Gifford Robert , Lenzi Tyler , Li Cheng-Han , Beunen Sven
Published: October 2024

This paper presents an automated focused ion beam (FIB) workflow that revolutionizes FIB-TEM sample preparation for semiconductor analysis, particularly for NAND and DRAM devices. This system integrates with Helios 5 HX and Helios 6 HX platforms to achieve consistent, hands-free sample preparation down to ~10 nm thickness. Our approach transforms traditional manual processes into automated workflows through comprehensive best-known method (BKM) templates, custom recipes, and proprietary code development in AutoTEM and iFast software architectures. The system features advanced machine vision algorithms and custom hardware components that enable precise sample coordination, allowing for both vertical and perpendicular TEM sample preparation from 3D structures at any wafer depth. Implementation results demonstrate significant improvements over manual processes, including thousands of hours in workforce savings, reduced material waste, faster throughput, improved data consistency, and minimized human error in DRAM and NAND structural analysis.
IC Backside Deprocessing Physical Failure Analysis with Laser Ablation Technique
Authors: Tan P.K. , Ting S.L. , Teo Angela , Xu N.Y. , Quah Alfred , Tam Y.S. , Kang K.K. , Oh Jessica , Roslan A.F. , Thiruppathi Nivasini , Wicaksono G. , Thoungh H.H.W. , Yu T.T. , Ng P.T. , Chen C.Q.
Published: October 2024

Integrated circuit (IC) de-processing is a crucial step in failure analysis (FA) for defect validation and root cause identification. The commonly used FA de-processing technique is top-down delayering, this is because of faster and easier for sample preparation. However, backside de-processing is occasionally necessary for fault isolation, better root cause understanding, and formulating the failing mechanism such as gate oxide defects, front-end of line (FEOL) defects, back-end of line (BEOL) vertical shorts, high power Ga-N on Silicon (Si) substrate device, etc. This paper introduces an innovative backside de-processing method for ICs utilizing laser ablation by employing a commercial laser decapsulation system. We thin the backside Si substrate via laser ablation and subsequent chemical etching, revealing FEOL defects. Experimental results demonstrate the method's efficiency, offering enhanced sample handling and reduced preparation time. The proposed backside laser de-processing technique proves to be a superior choice compared to conventional methods in terms of success rate, de-processing speed, and cost-effectiveness. This research contributes to advancing FA methodologies by introducing an innovative approach for backside physical FA applications, opening new possibilities for efficient and accurate IC analysis.
Using FIB Grooving to Prepare Top-down-Nanoprobed Sample for Site-Specific Cross-Sectional Nanoprobing Analysis
Authors: Ting S.L. , Tan P.K. , Yu T.T. , Ng P.T. , Chen C.Q.
Published: October 2024

Cross-sectional analysis plays a crucial role in failure analysis for the identification of root causes associated with implants or junction profiles. Traditionally, this step involves junction staining. Recently, Electron Beam Induced Current (EBIC) analysis has emerged as a valuable alternative, offering the key advantage of visualizing various implantations and junction profiles through non-chemical means. This paper presents an innovative sample preparation technique for cross-sectional EBIC analysis, incorporating an additional step of FIB (Focused Ion Beam) grooving at the target site before cross-sectional polishing. Unlike conventional methods that involve laborious and time-consuming fine cross-sectional polishing, our approach enhances precision and efficiency. With the elimination of the need for extensive polishing, direct access to the target is achieved after rough polishing, thereby expediting the analytical process.
Advancing Quantitative Failure Analysis and Strain Measurements at the Nanoscale by Using Scanning Electron Diffraction Microscopy Enhanced by Beam Precession
Authors: Morávek Tomáš , Serralta Eduardo , Hladík Lukáš , Chandran Narendraraj , Němeček Daniel , Stroud Robert
Published: October 2024

The role of scanning transmission electron microscopy (STEM) in failure analysis has been growing since the introduction of advanced technology nodes (10-nm and beyond), in which transistors (FinFET and nanosheets) have become much smaller and more complex. Four-dimensional scanning transmission electron microscopy (4D-STEM) is a new electron diffraction technique that expands conventional STEM imaging and EDX mapping to enable phase and orientation mapping of crystalline and amorphous phases in deposited thin films at the nanometer resolution. The enhancement of electron diffraction data by beam precession is then fundamental for higher accuracy and precision, especially in the case of strain measurements. The power of precession-assisted 4D-STEM analysis is demonstrated using the example of Germanium separation from within a Ge-rich GeSbTe layer in a phase memory device and with the example of tensile and compressive strain in a Samsung 5-nm technology node. These advanced electron diffraction measurements are now accessible to a broad range of users in routine analytical procedures due to unprecedented high levels of automation and synchronization in the new analytical STEM instrument, TESCAN TENSOR.
Statistical Degradation in BGAs for Early Fault Detection
Authors: Bender Emmanuel , Avraham Tsuriel , Bernstein Joseph B. , Boning Duane S.
Published: October 2024

This paper presents a method for statistical analysis of ball grid array (BGA) pin degradation in packaged devices. A novel testing system is demonstrated featuring parallel monitoring of numerous pins, fast thermal cycling, and precise degradation data generation even in moderate stresses. The resistance change data due to temperature cycling stress is compared to stress on the pin due to its location on the chip. The results are vital for localizing vulnerabilities in pins that are not location-specific in the chip. The methods introduced in this study can be expanded to analyze advanced packaging assemblies.
High Contact Resistance from Preferential Oxidation of Silane Gas
Authors: Qin Wentao , Ortiz Esteban , Lent Brandon , McGrady Tim , Yousefi Golnaz , Yach Randy , Chunder Avik , Barrientos Denise , Espinosa Manny , Merino Al , Janasky Christine , Ruiz Tina-cook , Blemker Andy
Published: October 2024

High resistance failures in P+ and N+ contact chains were traced to contacts partially filled with silicon dioxide (SiO2) instead of the intended tungsten. Investigation revealed that oxygen (O2) entered the deposition chamber through a faulty valve during silane gas (SiH4) flow for tungsten seed deposition. This contamination triggered a gas-phase reaction producing SiO2 particles that partially filled the contacts. Analysis of reaction kinetics explained the predominance of SiO2 formation over tungsten deposition: the bond dissociation energy for SiO2 formation is lower than that for tungsten, and SiO2-producing molecular collisions occur more frequently than tungsten-producing ones. The issue was resolved by replacing the leaking valve.
Advanced Package Fault Simulation—The Impact of Accelerated Trace Model Generation
Authors: Zhang Chuan , Aguada John , Sanchez Joseph , Bhattacherjee Arpan , Li Jane Y.
Published: October 2024

In advanced chip package failure investigations, Electro Optical Terahertz Pulse Reflectometry (EOTPR) simulation emerges as a highly effective fault isolation technique. However, traditional manual methods for generating simulation models face significant challenges, including laboriousness, time consumption, and susceptibility to human error. To address these obstacles, we have developed an automation software script in-house. This script autonomously interfaces with the design database, extracting crucial trace information and generating an optimized equivalent trace model. This automated process markedly enhances the efficiency of EOTPR model simulations, streamlining workflow, standardizing procedures, and reducing the potential for human error. The efficacy of integrating the automation script into the workflow of advanced package failure analysis was demonstrated through two case studies. This integration significantly enhanced productivity and enabled successful root-cause investigation of advanced package failures.
Consideration of a Ga-FIB in Lamella Sample Prep for EBIC/EBAC Analysis of Advanced-Node SRAMs
Authors: Johnson Gregory M. , Hartfield Cheryl , Rummel Andreas , Stegmann Heiko , Lechner Lorenz
Published: October 2024

The effects of sample prep with a Ga+-ion Focused Ion Beam (Ga-FIB) on measurements of electron beam induced current (EBIC) were studied. Concerns have been occasionally raised about amorphization from the beam, or even Ga+ implantation ruining the ability to make useful measurements for purposes of either failure analysis or device tailoring. To understand the magnitude of any deleterious effects, two different lamellae from a 5 nm SRAM sample were prepared with different areas of increasingly improved polish, as indicated by decreasing, cumulative, FIB beam energy, followed by EBIC measurements at 1 or 2 kV beam landing energy. A first experiment looked at the ability to generate EBIC measurements from depletion zones and found no difference across the various beam polish cells. A second experiment considered leakage and/or shorts and found little problematic currents, within standard deviations.
AFM-in-SEM for Precise Endpoint Delayering of SRAMs
Authors: Johnson Gregory M. , Hitzel Frank
Published: October 2024

Milling experiments were undertaken with an AFM-in-SEM system to examine various layers in the SRAMs of a 3 nm finFET node technology chip. The simultaneous Conductive AFM and tomographic milling operation provided feedback as to the exact state of delayering in the sample. Despite the relatively rough appearance of some areas of the chip, the milling by the AFM tip was able to create local areas with high planarity. The AFM measurement provided the exact moment certain structures were polished through. Discussion of various electrical modes in the analysis that might provide clearer indications of breakthrough is also undertaken in this paper.
FA Challenges and Case Study Exploration of Multidie Fan-Out Wafer Level Packages
Authors: Zee Bernice , Wen Qiu , Mohammad-Zulkifli Syahirah
Published: October 2024

The semiconductor industry is no longer driven purely by performance. Miniaturization, increased functionality, low latency and high bandwidth requirements are becoming more important. Furthermore, as Moore’s law scaling becomes more difficult and costly, innovations in packaging technologies through heterogeneous integration are being adopted rapidly to meet these demands. This paper discusses how defects in InFO (Integrated Fan-Out) wafer level multi-die semiconductor packages can be successfully root caused and describes the challenges faced when doing failure analysis of such packages.
An Introduction to the FIB as a Microchip Circuit Edit Tool (2024 Update)
Authors: Herschbein Steven , Tan Shida , Livengood Richard , Wong Michael
Published: October 2024

Presentation slides for the ISTFA 2024 Tutorial session “An Introduction to the FIB as a Microchip Circuit Edit Tool (2024 Update).”
Atom Probe Tomography: Introduction and Applications to SEMI
Authors: Rice Katherine P
Published: October 2024

Presentation slides for the ISTFA 2024 Tutorial session “Atom Probe Tomography: Introduction and Applications to SEMI.”
Fundamental Considerations in the Justification, Design and Construction of an Analytical Laboratory for High Tech Imaging and Processing Tools (2024 Update)
Authors: Herschbein Steven , Hartfield Cheryl , Wong Michael
Published: October 2024

Presentation slides for the ISTFA 2024 Tutorial session “Fundamental Considerations in the Justification, Design and Construction of an Analytical Laboratory for High Tech Imaging and Processing Tools (2024 Update).”
Enterotomia para remoção de corpo estranho no jejuno
Authors: Souza Ferreira Elyfelette , Souza Fernanda Nascimento de , Vasconcelos Camelo Pereira Frankcijhonatan , Barbuio Roberto
Published: October 2024

In the small animal clinic, dogs are frequently seen that ingest non-digestible objects which end up causing obstruction in the animal's digestive system. Young canines are the most affected, as they tend to eat or/and play with inedible objects indiscriminately. The diagnosis of intestinal obstruction is essential, as it can cause clinical repercussions such as erosions and ulcers. Therefore, it is based on anamnesis and clinical signs such as emesis, anorexia and apathy. In addition, when necessary, the professional may request imaging tests and an exploratory laparotomy to confirm the diagnostic hypothesis. From this perspective, a Shih Tzu dog, approximately two years old, weighing 4 kg, was seen at the clinic. During anamnesis, the guardian reports that the patient was apathetic and had recurrent vomiting. Upon clinical examination, only moderate dehydration was evident. The treatment was carried out surgically using the laparotomy technique followed by enterotomy, which is the most recommended treatment in cases of intestinal obstruction caused by a foreign body. The animal had a positive prognosis and a good recovery. Therefore, the aim of this work is to report a case of obstruction of the intestinal tract by a foreign body in a dog, and the surgical techniques used to treat it.
Fitness Yapan Bireylerin Egzersiz Bağımlılığı ile Fiziksel Benlik Algısı Arasındaki İlişkinin İncelenmesi
Authors: Yıldırım Ali , Gören Selvi
Published: October 2024

Bu araştırma, Fitness yapan bireylerin egzersiz bağımlılığı ile fiziksel benlik algısı arasındaki ilişkiyi incelemek; egzersiz bağımlılığı ve problem çözme becerilerinin cinsiyetlerine, medeni durumlarına, hafta da kaç gün fitness yaptıklarına, bedensel görünümleri ile ilgili düşüncelerine ve fitness merkezine gitme nedenlerine bağlı olarak farklılaşıp farklılaşmadığını inceleme amacı ile yapılmış bir çalışmadır. Araştırma grubunu spor salonlarına fitness yapmak amacıyla gitmekte olan 133 Kadın ve 117 Erkek oluşturmaktadır. Araştırmada veri toplama aracı olarak kişisel bilgi formu, Tekkurşun, Demir ve ark. (2018) tarafından geliştirilen Egzersiz Bağımlılık Ölçeği ve Ninot tarafından 2000 yılında geliştirilmiş ve 2017 yılında Çağlar ve arkadaşları tarafından Türkçeye uyarlaması yapılan fiziksel benlik algısı ölçeği uygulanmıştır. Araştırma sonucunda elde edilen veriler SPSS 25.0 programı kullanılarak analiz edilmiştir. Kişisel bilgilerin yüzdelik dağılımının belirlenmesinde frekans analizinden faydalanılmıştır. Ölçek puanlarını analiz etmede ise Independent Samples T test kullanılmıştır ikiden fazla olan kategorili demografik değişkenlere göre ölçek puanlarının karşılaştırılmasında One Way ANOVA analizi yapılmıştır, kullanılan analizlerde anlamlılık düzeyi p
Pasando
Authors: Lobos Constanza
Published: October 2024

El pasaje de analizante a analista se encuentra en el centro de la Escuela de psicoanálisis. Se manifiesta como fundamental la pregunta referida a la transformación del sujeto analizante y la emergencia del deseo del analista. El presente texto plasma un recorte del testimonio, de los pasos en el atravesamiento analítico, de un recorrido que posibilitó una conclusión. También aborda cuestiones en relación al dispositivo del pase. Destaca que la puesta en funcionamiento del mismo no sólo causa a los involucrados directamente en el dispositivo sino que tiene efectos más allá de la experiencia de cada uno, efectos en la comunidad. Finalmente, concluye que testimoniar sobre la operación del análisis, y la posibilidad de contribuir al psicoanálisis, es una apuesta que no termina en el pase sino que es a renovarse permanentemente.
Dissymmetrization in eudialyte-group minerals. I. A model of ordered cation arrangement in the crystal structure of amableite-(Ce) using the P3 symmetry
Authors: Rastsvetaeva R. K. , Aksenov S. M. , Gridchina V. M. , Chukanov N. V.
Published: October 2024

The crystal structure of the recently discovered eudialyte group mineral, amabellite-(Ce) Na15[(Ce1.5Na1.5)Mn3]Mn2Zr3£Si[Si24O69(OH)3](OH)2 · H2O, found in the hyperagpaitic pegmatite of the Saint-Amable massif (Canada), has been solved by X-ray structural analysis within the space group R3. Amabellite-(Ce) is a member of the eudialyte group with the lowest calcium content and differs from other members of this group by the dominance of lanthanides in the part of the edge-sharing octahedra of the six-membered ring. The unit cell parameters of the mineral are: a = 14.1340(2), c = 30.378(1) Å, V = 5255.6(3) Å³. A model of the cation distribution in the crystal structure of amabellite-(Ce) within the low-symmetry space group P3 has been proposed. The obtained 162 independent positions were refined in the isotropic-anisotropic approximation of atomic displacements using 3968 F 3σ(F), R = 4.6%. Despite the fairly close results, the transition from space group R3 to P3 allows for more detailed information on the local distribution of a number of elements over the framework positions. A comparison was made between the crystal structure models of amabellite within the symmetries R3 and P3, as well as other low-calcium eudialyte group minerals previously studied within several space groups.
Cuba: environmental protection as a factor in sustainable development
Authors: Nikolaeva L. B. , Kalashnikov N. V.
Published: October 2024

Rational use of natural resources and environmental protection are an important part of Cuba's state policy to achieve sustainable socio-economic development. The country has a variety of natural resources, during the exploitation of which it is necessary to solve various environmental problems. Cuba is also making significant efforts to combat climate change. The article discusses issues of legislative support for nature protection, environmental problems arising as a result of economic activities, and measures to overcome them. The authors show that despite the limited funds and the targeted steps taken to protect nature, Cuba was able to improve its environmental position against the world background and achieve some success in preserving its natural potential.
The machine system as a factor of scientific and technological progress in agro-industrial complex
Authors: Korotchenya V. M. , Tsench Yu. S. , Lobachevsky Ya. P.
Published: October 2024

The article proposes a principle for forming a machine system using the object-process approach to modeling technical systems as a methodology of systems engineering. It has been shown that the central concept of a machine system is scientific and technological progress (STP): a machine system should simultaneously promote progress in the agro-industrial complex (AIC) and reflect it. The article presents a definition of a machine system, its functions, main goal, architecture, stakeholders, and external environment. A machine system is positioned as a mixed system that combines conceptual, substantive, and physical components. The conceptual part is an information product – the machine system itself, presented in the form of a computer program, website, standards, databases, on paper, etc. The physical component is a group of experts in developing a machine system. It has been shown that in a market economy, a machine system should be built not on the basis of specific brands and models of technical means, but on the basis of their types. A definition of the type was proposed based on the division of technical means characteristics into functional and non-functional. To substantiate the machine types, an approximate list of types of non-functional characteristics of agricultural machinery was formed. Diagrams of the architecture of the machine system and the development of types of agricultural machines were constructed. The architecture of the machine system is a combination of the structure of the machine system and the activities of experts in the development of the machine system, which ensures the performance of the machine system of its functions, the main ones being the systematization of agricultural machines and technologies and the formation of ideas among interested parties about the state and directions of scientific and technological progress in the agro-industrial complex.