bluuebunny/crossref_metadata_2025 huggingface dataset:
GROWTH OF WHISKER CRYSTALS AND RELATED MORPHOLOGIES BY ELECTROTRANSPORT
Authors: Berry R. W. , Bouton G. M. , Ellis W. C. , Engling D. E.
Published: March 2005

Whisker crystals and related filamentary and spherical shapes grow at the solder terminations of thin-film resistors when the circuits carry excessive direct current. The growths have been observed in most instances near the positive termination. With tin-lead solder the growths at the positive termination are predominantly tin. Whisker crystals are often single. Studies show that electrotransport plays a role in the growth.
LASER-INDUCED DAMAGE IN COPPER CRYSTALS
Authors: Murphy James , Ritter George J.
Published: March 2005

Single high-power output pulses from a Q-switched ruby laser are focused onto thin copper crystals. Diffraction-contrast transmission electron microscopy reveals that so-called black spot defects are introduced in the samples, within the laser-produced crater areas. These defects are similar to those observed, for example, in neutron-irradiated copper samples. They cause a marked increase in hardness at and near the crystal surface.
DIRECT OBSERVATION OF THE DRIFT VELOCITY AS A FUNCTION OF THE ELECTRIC FIELD IN GALLIUM ARSENIDE
Authors: Chang D. M. , Moll J. L.
Published: March 2005

The drift velocity as a function of the electric field in gallium arsenide was measured directly by studying the response of a reverse-biased Schottky-barrier i-n+ GaAs photodetector to a step input of light. The photoresponse was dominated by trapping of electrons in the i region. Analysis based on a simple model yielded the drift velocity—electric field characteristic in GaAs up to fields of 9000 V/cm. A region of negative differential mobility was observed to exist between a peak field of 2200 V/cm and an apparent valley field of 8000 V/cm.
MAGNETIC Q SPOILING OF COOLED RUBY
Authors: Eckardt R. C. , Bradford J. N. , Tucker J. W.
Published: March 2005

A technique involving the use of a magnetic field in ``Q''-spoiling a ruby laser cooled to 77°K is discussed. The laser rod is pumped in an intense, inhomogeneous magnetic field where gain is reduced by spatially inhomogeneous Zeeman splitting of the 4A2 ground multiplet. The rapid removal of this magnetic field produced a 500-nsec period of enhanced amplitude spiking.
OPTICAL FREQUENCY TRANSLATION OF MODE-LOCKED LASER PULSES
Authors: Duguay M. A. , Hargrove L. E. , Jefferts K. B.
Published: March 2005

Optical frequency translation of pulses from a mode-locked laser is described and demonstrated experimentally. The laser beam is passed through a crystal of LiNbO3 whose refractive index is made to change sinusoidally at the mode-locked laser round-trip frequency (56 Mc/sec). A Doppler shift of the laser light results. Shifts of ±2.4 Gc/sec have been observed. The scheme may be capable of producing shifts as large as ±1000 Gc/sec.
ULTRASONIC PROPERTIES OF BISMUTH GERMANIUM OXIDE
Authors: Spencer E. G. , Lenzo P. V. , Ballman A. A.
Published: March 2005

Temperature dependence of the elastic wave losses is reported for bismuth germanium oxide, Bi12GeO20, a strongly piezoelectric crystal of point group 23. At 296°K and at 500 Mc/sec the attenuation, Γ, is 0.11 dB/μsec and at 118 Mc/sec is 0.008 dB/μsec. At 4.2°K and at 500 Mc/sec, Γ is 5 × 10−4 dB/μsec and at 118 Mc/sec is 2.7 × 10−4 dB/sec. At intermediate temperatures five loss peaks are observed, the origins of which as yet have not been determined. A shear wave velocity and the longitudinal wave velocity in the [110] direction are 1.77 × 105 and 3.42 × 105 cm/sec, respectively. The low elastic wave velocities and loss in Bi12GeO20, the low crystallization temperature, the piezoelectric coupling and the fact that it is cubic suggest possible advantages for device application involving storage of information at vhf and microwave frequencies.
OPTICAL PARAMETRIC OSCILLATION IN THE VISIBLE SPECTRUM
Authors: Giordmaine J. A. , Miller R. C.
Published: March 2005

A LiNbO3 optical parametric oscillator has been temperature tuned over the wavelength range of 7300 Å to 19,300 Å. Total output powers of the order of 103 W were observed with pump powers at 5300 Å of about 105 W. Experimental data illustrate the pronounced dependence of the generated frequencies on the pump frequency and the longitudinal mode distribution of the resonator. A proposal is described for quasicontinuous tuning of the output frequencies by means of the linear electro-optic effect in the oscillator crystal.
PHOTOVOLTAIC EFFECT IN PbxSn1−xTe DIODES
Authors: Melngailis I. , Calawa A. R.
Published: March 2005

Photovoltaic response has been observed in p-n junctions of PbxSn1−xTe at wavelengths up to 9.5 μ at 77°K and up to 12 μ at 12°K. These results together with previous photoluminescence data and the proposed model for the band structure of PbxSn1−xTe (ref. 1) indicate that these alloys have considerable potential for efficient infrared detection throughout the 8 to 14 μ atmospheric window and well beyond.
ORGANIC DYE SOLUTION LASER
Authors: Schäfer Fritz P. , Schmidt Werner , Volze Jürgen
Published: March 2005

The operation and characteristics of liquid lasers with a purely organic medium are described. A giant-pulse ruby laser is used to pump solutions of organic dyes in various organic solvents in concentrations ranging from 10−3 to 10−6 moles/liter. The solutions are contained in plane-parallel cuvettes acting as laser cavities. Wavelengths from 730 to 870 nm, megawatt peak powers and beam divergence angles of 5 mrad have been observed. The laser wavelength of each dye is tunable over a great part of its fluorescence band, e.g. by a change in concentration.
PERFORMANCE OF A VIBRATIONAL H2-STOKES OSCILLATOR
Authors: Avizonis P. V. , Guenther A. H. , Wiggins T. A. , Wick R. V. , Rank D. H.
Published: March 2005

A H2-Stokes Raman oscillator was constructed operating at 9755 Å, and its performance was found to be as expected of laser oscillators. No beam instability was developed (beam trapping), confirming earlier measurements. A significant beam brightness enhancement (in terms of line width and beam divergence) over that of the Q-switched ruby laser resulted.
STATISTICAL RANGE DISTRIBUTION OF IONS IN SINGLE AND MULTIPLE ELEMENT SUBSTRATES
Authors: Johnson W. S. , Gibbons J. F.
Published: March 2005

The distribution of energetic ions implanted into an amorphous target is approximately Gaussian and can therefore be characterized by quoting a mean 〈R〉 and standard deviation σR for the range. A computer program has been written which calculates and plots 〈R〉 and σR as a function of energy for any ion impinging on either a single- or multiple-element substrate. Typical results for ions of interest in Si and SiO2 are presented.
ANOMALOUS POLARITY-DEPENDENT ELECTROOPTIC EFFECT IN CUBIC ZnS AND ZnTe
Authors: Myers R. A. , Powell C. G.
Published: March 2005

An electrooptic effect with noncubic symmetry has been observed in cubic single crystals of ZnS and ZnTe. It is anomalous in that for one field polarity the result is an apparent decrease in the birefringence for small voltages rather than the expected increase. A likely explanation is the presence in our samples of a small polar strain, which is partially removed by one polarity electric field.
SIMULATION OF THE SOLAR WIND INTERACTION WITH COMETS
Authors: Danielsson L.
Published: March 2005

A model experiment simulating the interaction between the solar wind and comets is described. A plasma stream of 107 cm/sec and 1013 protons/cm3 undergoes a collisionless interaction with a cloud of CO2 gas sublimated from a piece of dry ice. Time-resolved photographs show a well-defined, comet-like structure around the dry ice. An extended tail is formed by ions dragged along with the plasma stream. The ionization and acceleration processes are discussed in the light of a possible mechanism based on frozen-in magnetic fields.
ON ULTRASONIC ATTENUATION IN NICKEL SINGLE CRYSTALS
Authors: Basu B. K. , Sethna P. P.
Published: March 2005

A peak has been observed in the ultrasonic attenuation in a nickel single crystal with a constant uniaxial stress and varying magnetic field. The occurrence of the peak is explained on the basis of changes in domain boundary configuration.
ELECTROABSORPTION AT THE OPTICAL ABSORPTION EDGE OF AMORPHOUS Se
Authors: Drews R. E.
Published: March 2005

Electroabsorption at the optical absorption edge of amorphous Se (Ep ∼ 1.7–2.2 eV) has been investigated. The measurements were made at room temperature on vacuum-deposited layers of Se. Interpretations of the effect in terms of either a Franz-Keldysh effect or a quadratic Stark shift of localized states are suggested.
A SIMPLE METHOD FOR MEASURING ELECTRON DENSITY IN A PLASMA
Authors: Shtricker J.
Published: March 2005

A simple method is presented for measuring electron densities in shock waves or plasmas. It measures the attenuation of low-power transmitted uhf waves through the plasma. The instrument has good time resolution and is inexpensive. It needs an independent absolute calibration.
MEASUREMENT OF PICOSECOND LASER PULSE WIDTHS
Authors: Armstrong J. A.
Published: March 2005

The special symmetry properties of second-harmonic generation at the surface of a GaAs crystal are used in a technique which measures the shape of the fast pulses from a mode-locked Nd-glass laser. The pulses studied were found to have a full width at half power of between 4 and 6 picoseconds. The technique is capable of measuring pulse widths at least as short as 4 × 10−13 sec.
NON-OHMIC CURRENT TRANSPORT PHENOMENA IN HIGH-RESISTIVITY GaAs
Authors: Seitchik J. A. , Stein B. F.
Published: March 2005

We have observed non-ohmic conductivity in n-type semi-insulating GaAs. It has been accompanied by negative photoconductivity and giant magnetoresistance. Potential probe measurements show that the electric field increases from cathode to anode which indicates that electrons are injected at the cathode. Double injection is improbable on the basis of hole lifetimes and the absence of negative resistance regions. The threshold field for non-ohmic behavior is weakly dependent on sample length. This implies either that the trapping parameters are strongly influenced by the electric field or that there is appreciable impact ionization of trapped, injected charge.
PRESSURE- AND CURRENT-DEPENDENT SHIFTS IN THE CENTER FREQUENCY OF THE DOPPLER-BROADENED (2p4 → 3s2) 6328-Å 20Ne TRANSITION
Authors: White A. D.
Published: March 2005

Measurements have been made of the shift in center frequency of the (2p4 — 3s2) 6328-Å 20Ne transition in a Zee-man discharge cell as a function of discharge current and gas filling. Such measurements are important for comparing the reproducibility and long-term stability of laser stabilization systems which use the laser itself as a reference with those systems using an external discharge cell as a reference.
DIELECTRIC RELAXATION EFFECTS IN A METAL-OXIDE-PLASMA CAPACITOR
Authors: Olson Robert A. , Medicus G.
Published: March 2005

Measurements of k*Cg, the complex dielectric constant k* times the geometrical capacity Cg, of a metal-oxide-plasma capacitor have shown that k* exhibits dispersion in the audio frequency range. A series of dielectric relaxation spectra has been obtained for Al2O3 layers (anodized) by varying the plasma density. The dependence of the spectra on plasma density and oxide thickness is indicative of Maxwell-Wagner behavior. A Cole-Cole representation of the data shows a broadening of the dispersion toward low frequency with a secondary dispersion process appearing at low frequency. The main dispersion can be described by an empirical dispersion formula which represents an asymmetrical distribution of relaxation processes. The secondary dispersion may result from a very low frequency dispersion of the admittance components of the plasma sheath or from charge migration in the oxide.
EFFECT OF FILM RESISTANCE ON LOW-IMPEDANCE TUNNELING MEASUREMENTS
Authors: Pedersen R. J. , Vernon F. L.
Published: March 2005

Measurements of low-impedance thin-film tunneling junctions at room temperature frequently yield inaccurate values for the tunneling resistance. In some cases the indicated resistance is negative. A theory is developed which shows that the finite resistance of the metal films can account for the observations. Results, given for the resistance of a tunneling junction as a function of temperature, show good agreement between theory and experiment.
SPIKING AND TIME BEHAVIOR OF A PULSED WATER-VAPOR LASER
Authors: Jeffers W. Q. , Coleman P. D.
Published: March 2005

Experimental data is presented on the time behavior of a pulsed water-vapor laser. Most of the far-infrared emission lines from this laser showed quite rapid spiking. In addition, the lines showed significantly different time delays between the start of the current pulse excitation and the onset of laser oscillation.
ZINC-OXIDE FILM MICROWAVE ACOUSTIC TRANSDUCERS
Authors: Malbon R. M. , Walsh D. J. , Winslow D. K.
Published: March 2005

Thin-film zinc-oxide microwave acoustic transducers have been formed successfully by vacuum deposition techniques upon a cooled substrate (−50°C) by evaporation of zinc with an oxygen beam. The films are hexagonal preferentially oriented with c axis normal to the substrate. A device consisting of a ZnO film (1.9 μ) deposited on a metallic film on a sapphire delay line had a one-way conversion loss of 6 dB at 1.6 GHz with a large bandwidth indicating that zinc-oxide thin films deposited by this method make good ultrasonic transducers at frequencies above 1 GHz.
TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES
Authors: Dahlke Walter E.
Published: March 2005

Measurements of the dc conductance of Si-SiO2–(Cr+Au) devices using P++-type Si and thin oxide layers (<50 Å) show one to two orders of magnitude increase of dc conductance of tunneling into the forbidden semiconductor band by changing from dry oxygen grown to steam grown and to annealed steam-grown oxide layers. The effect is explained by a corresponding increase of interface state density well known for thicker oxide layers (≈ 1000 Å).
MULTIPLE-PATH LIGHT BEAM DEFLECTOR
Authors: Lee T. C. , Zook J. D. , Heaps J. D.
Published: March 2005

A new method of analog light beam deflection, employing the principle of multiple passage of plane waves through an electro-optic prism is described. Design of the system bears resemblance to the design of a double-pass monochromator. The number of passages depends on such parameters as the focal length, beam width, maximum deflection angle per round trip, and total lens field. A preliminary version of the deflector using a KDP prism and a Questar telescope is discussed.
IMAGE RECONSTRUCTION FROM SAMPLED ACOUSTICAL HOLOGRAMS
Authors: Metherell A. F. , El-Sum H. M. A. , Dreher J. J. , Larmore L.
Published: March 2005

The wavefront reconstruction technique has been used to reconstruct an optical image from a sampled hologram. The hologram was made using sound waves at 21 kHz instead of light. This was done by sampling the acoustic field with an ordinary microphone which was used to raster scan a plane.
THERMAL EVIDENCE OF A GLASS TRANSITION IN GOLD-SILICON-GERMANIUM ALLOY
Authors: Chen H. S. , Turnbull D.
Published: March 2005

The specific heat of a ``splat''-formed amorphous alloy of gold-silicon-germanium exhibits a very steep rise with increasing temperature near 295°K to a peak and then begins to fall before crystallization occurs. These last Cp values fall on a reasonable extrapolation of the high temperature Cp-T relation found for the liquid alloy. These results are attributed to a glass → liquid transition in this metal system.
DIFFRACTION OF NEUTRONS AND X RAYS BY A VIBRATING QUARTZ CRYSTAL
Authors: Klein A. G. , Prager P. , Wagenfeld H. , Ellis P. J. , Sabine T. M.
Published: March 2005

Experiments on the diffraction of neutrons and x rays by a piezoelectrically vibrating quartz crystal have shown the following phenomena: large increases of the diffracted intensity relative to the nonvibrating crystal, modulation of the diffracted beam and the appearance of forbidden reflections. Preliminary measurements and a qualitative explanation are reported.
MEASUREMENT OF ACOUSTIC SURFACE WAVE PROPAGATION CHARACTERISTICS BY REFLECTED LIGHT
Authors: Korpel A. , Laub L. J. , Sievering H. C.
Published: March 2005

This Letter reports on a novel method of recording acoustic surface wave patterns by reflected light. In this method the surface perturbations due to the sound wave act as a moving reflection grating, causing the reflected light to exhibit a phase corrugation which is a replica of the sound wave and moves in synchronism with it. At a certain distance from the grating this phase corrugation changes into a corresponding amplitude corrugation. A fixed grating located at this point, followed by a photomultiplier, serves to extract an electrical signal at the original sound frequency. This signal of which the amplitude is proportional to the surface perturbation is fed to an X-Y recorder. By slowly moving the substrate on which the surface wave travels, a recording is made of the surface wave pattern in any desired cross section. Examples are given of 8 MHz standing and traveling surface wave patterns on a ferroelectric ceramic substrate.
INTERACTION OF CONDUCTION AND INDUCED CURRENTS IN Nb3Zr WIRES SUBJECTED TO AXIAL FIELDS
Authors: Belanger B. C. , LeBlanc M. A. R.
Published: March 2005

A residual magnetization induced in Nb3Zr wires by axial fields appreciably enhances Ic. Further, the presence of a conduction current as an axial field Hz is removed not only leads to considerably increased residual moments but also enables the wire to support currents at H = 0 much larger than is possible in the virgin state.
INTERFEROMETRIC INVESTIGATION OF THE WAVEFRONT OF LASER BEAMS
Authors: Davis L. W.
Published: March 2005

A simple interferometric technique which uses a diverging spherical comparison wave for study of laser beams is described. The interference pattern resulting from superposition of the primary beam and a small portion of the expanded comparison wavefront provides information about both the phase and some spatial coherence properties of the primary radiation. Expected interference patterns have been obtained for a spatially coherent beam from a He–Ne gas laser. The phase character and spatial coherence features of the beam from a Q-switched ruby laser have been investigated.
SATURATED NEON ABSORPTION INSIDE A 6238-Å LASER
Authors: Lee Paul H. , Skolnick Michael L.
Published: March 2005

Excited 20Ne at 0.1 torr was placed inside the cavity of a single-frequency, 6328-Å laser. A pronounced peak appeared in the output power, caused by an inverted Lamb dip effect. Because of the low pressure used, this peak was only 30 ± 5 MHz wide and must be very near the atomic resonant frequency. In contrast, the overall output curve was blue-shifted 60 ± 10 MHz by the 3 torr nominal pressure in the laser gain tube. This saturated absorption effect can be used as an absolute reference for the frequency stabilization of He–Ne and similar lasers.
NOISE IN DOUBLE-INJECTION SPACE-CHARGE-LIMITED DIODES
Authors: Liu S. T. , Yamamoto S. , van der Ziel A.
Published: March 2005

It is shown that the h.f. conductance g of a double-injection Ge diode shows transit time effects and that the limiting noise can be represented by a current generator (4kTgΔf)1/2 in parallel to the device. In contrast, the single-injection diode seems to be best represented by a current generator (8kTgΔf)1/2.
DIRECT MEASUREMENT OF GAIN IN A LITHIUM NIOBATE PARAMETRIC AMPLIFIER
Authors: Colles M. J. , Smith R. C.
Published: March 2005

Signal gain has been measured directly in a LiNbO3 near-infrared parametric amplifier. A maximum gain of 30% was achieved at a signal wavelength of 1.152 μ using 50 kW of pump power at 0.53 μ. Theoretical and experimental gain coefficients are given and compared with the results of recent parametric oscillator experiments by other workers.
DOUBLE INJECTION IN EVAPORATED SILICON FILMS
Authors: Braunstein M. , Braunstein A. I. , Zuleeg R.
Published: March 2005

We have observed negative resistance behavior in evaporated silicon films at room temperature and at liquid nitrogen temperatures which we believe is due to double injection. This, to our knowledge, is the first reporting of double injection in silicon thin films, as well as the first reporting of an active device prepared from silicon thin films. Sample lengths in previous work have ranged from one hundred to several thousand microns. The films used in our work are 0.4 to 0.6 μ thick.
SCANNING ELECTRON MICROSCOPY OF FERROELECTRIC DOMAINS IN BARIUM TITANATE
Authors: Robinson G. Y. , White R. M.
Published: March 2005

Ferroelectric domains in single-crystal tetragonal barium titanate have been observed in the scanning electron microscope. Contrast in the image results primarily from the surface topography associated with domains; thus it is possible to observe surface structure associated with 90° domains under high magnification. In the scanning microscope one can observe the disappearance of domain structure above the Curie temperature, as well as domain growth and movement produced by intense electron bombardment. Scanning electron micrographs of as-grown BaTiO2 have revealed surface structure which may correspond to the permanent surface layer which exists on BaTiO3.
ANALYSIS OF Sb-IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS
Authors: Eriksson L. , Davies J. A. , Denhartog J. , Mayer J. W. , Marsh O. J. , Markarious R.
Published: March 2005

The annealing behavior of Si crystals, implanted with ∼1015 Sb ions/cm2 at 40 keV, has been studied by observing the orientation dependence of the scattering yield of 1.0-MeV protons and also by electrical measurements. The scattering measurements provide information on the sites of the implanted atoms and on the extent of lattice disorder. After a room temperature implant, the lattice is heavily damaged, with the Sb occupying random (or interstitial) positions. After annealing at 650°C, ∼75% of the Sb is substitutional with very little damage remaining. Comparable results are obtained in a 400°C implant.
PRESSURE SENSITIVITY OF GOLD-POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES
Authors: Rideout V. L. , Crowell C. R.
Published: March 2005

The effect of localized uniaxial force (exerted by a hemispherical stylus) on the voltage-current relationship of Au-KTaO3 Schottky barrier diodes is described. Pronounced reversible changes were observed and characterized by stress-induced decreases of up to 0.8 eV in the metal-semiconductor barrier height. The observed diode n values [n ≡ (q/kT)(dV/d ln J)] at 300°K ranged from 1.05 to 1.10. This indicates that thermionic field emission may be the dominant current flow mechanism. An analysis of the pressure profile produced by the stylus yields 4 × 10−11 V-cm2/dyn for the pressure sensitivity of the barrier height.
LOW SPATIAL FREQUENCY HOLOGRAMS OF SOLID OBJECTS
Authors: Vandewarker Richard , Snow Kenneth
Published: March 2005

A method is described whereby low spatial frequency holograms that reconstruct well in white light may be produced and easily copied on inexpensive Diazo materials.
MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
Authors: Ruch J. G. , Kino G. S.
Published: March 2005

The electron velocity-field characteristic of insulating GaAs has been measured by injecting electrons with an electron beam. The measured low field mobility is 7500 cm2/V-sec with an initial negative differential mobility of −2400 cm2/V-sec at a threshold field of 3.2 kV/cm.
STIMULATED ELECTRONIC RAMAN SCATTERING
Authors: Sorokin P. P. , Shiren N. S. , Lankard J. R. , Hammond E. C. , Kazyaka T. G.
Published: March 2005

Stimulated electronic Raman scattering in potassium vapor is observed. The primary source was a nitrobenzene Raman-shifted ruby laser. The secondary beam frequency occurs 58 cm−1 to the high energy side of νp.
CONTINUOUS DEFLECTION OF LASER BEAMS
Authors: Lean E. G. H. , Quate C. F. , Shaw H. J.
Published: March 2005

An optical beam has been continuously deflected through an angle of 4° by tuning an acoustic wave in a birefringent crystal of sapphire from 1.28 to 1.83 Gc. The method is based on the change in polarization of the deflected light as compared to the incident light. The system should be capable of deflecting an optical beam through 1000 spot diameters.
PHASE LOCKING OF LASER MODES BY CONTINUOUS CAVITY LENGTH VARIATION
Authors: Smith P. W.
Published: March 2005

Phase locking of the longitudinal modes of a gas laser has been obtained by translating one of the cavity mirrors at a constant velocity. The velocity required to obtain locking depends almost lineraly on excitation as long as only the fundamental transverse mode is oscillating. No plausible explanation has been found for these effects.
TUNABLE LiNbO3 OPTICAL OSCILLATOR WITH EXTERNAL MIRRORS
Authors: Miller Robert C. , Nordland W. A.
Published: March 2005

With an optical cavity formed by external mirrors, parametric oscillation in LiNbO3 has been achieved from 0.684 μ to 2.355 μ − 70% of the theoretical range of the oscillator. The oscillator, pumped at 0.53 μ, was tuned by rotation of the LiNbO3 crystal. Total output powers of about 50 W were observed with pump powers of 5 × 104 W. The logarithm of the output power is proportional to the reciprocal of the optical length of the cavity.
InSb MOS INFRARED DETECTOR
Authors: Phelan R. J. , Dimmock J. O.
Published: March 2005

Infrared photovoltaic response and high quantum efficiency have been observed in a large-area InSb, metal-oxide-semiconductor structure. Spectral measurements indicate that the response is due to the generation of electron-hole pairs in a depletion region of the n-type InSb at the InSb-oxide interface. Pulsed current measurements yield a clear diode characteristic and the overall results are equivalent to what one would expect to obtain from a photodiode in series with a MOS capacitor.
SPACE-CHARGE RECOMBINATION OSCILLATIONS IN SILICON
Authors: Moore J. S. , Holonyak N. , Sirkis M. D. , Blouke M. M.
Published: March 2005

Current oscillations in Au-compensated Si p-``i''-n diodes have been studied. These oscillations are quite independent of the external circuit (i.e., they are not negative resistance oscillations) and are not attributable to transit time effects. The various parameters affecting these oscillations have been examined, and a space-charge instability model which is in accord with the experimental data is proposed.
THE THERMAL LENS EFFECT AS A POWER-LIMITING DEVICE
Authors: Leite R. C. C. , Porto S. P. S. , Damen T. C.
Published: March 2005

Due to residual absorption, a self-induced negative lens is formed when molecular liquids are inserted in the path of a CW laser beam. This lens has a power-dependent focal length which allows for its application as a power controller. Experimental results show that control under 3% is obtained for a CW argon laser.
RESISTANCE IN THE MIXED STATE OF TYPE-II SUPERCONDUCTORS
Authors: Willis J. S. , Schenck J. F. , Shaw R. W.
Published: March 2005

A mechanism is proposed for pinning of fluxoids by spatial inhomogeneities in the Ginzburg-Landau kappa parameter of a material. This is applied to resistive data from Tl–Pb and Pb–In alloys.
HIGH-SPEED WAVELENGTH SELECTION IN THE LASER CAVITY
Authors: Habegger M. A.
Published: March 2005

The performance and limitations of a nonmechanical wavelength selector are reported. This device, when placed in an argon laser cavity, can switch laser oscillation from one wavelength to another in a time of the order of 1 μsec.
ENHANCEMENT OF FERROMAGNETIC SHIELDING AGAINST LOW-FREQUENCY MAGNETIC FIELDS
Authors: Cohen David
Published: March 2005

Experimental data are given to show that the impression of an alternating magnetic field of constant amplitude on a ferromagnetic shield, called shaking, enhances the shielding factor against alternating external magnetic fields. Contrary to expectation the shielding is enhanced against disturbing frequencies both below and above the shaking frequency. It is shown that this effect cannot be explained by a simple model using the harmonics of the shaking induction.
ROOM TEMPERATURE LASING OF CdS UNDER PULSED ELECTRON BOMBARDMENT
Authors: Nicoll F. H.
Published: March 2005

Single-crystal platelets of CdS supported on a room temperature substrate have shown laser emission under pulsed 22-kV electron bombardment at current densities around 4 A per cm2. This threshold is not much greater than at liquid nitrogen. The green laser beam is sheet-like and has a wavelength of 5280 Å. An approximate figure for the pulsed power efficiency intò the total laser beam is 0.5% at levels not far above threshold.
PHOTO- AND THERMOLUMINESCENCE OF LiF: (Mg, Ti)
Authors: Zimmerman D. W. , Jones D. E.
Published: March 2005

This Letter shows the existence of a luminescent center for the thermoluminescent process in LiF containing Mg and Ti as impurities. Mg impurity has previously been related to trapping centers in thermoluminescent LiF. The Ti impurity is related to this luminescent center and an absorption band at 200 nm. Correlation is shown between this band and its photoluminescent spectral efficiency under ultraviolet excitation. Photo- and thermoluminescent emission spectra are shown at various temperatures for this center.
HERMITE-GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERS
Authors: Dyment J. C.
Published: March 2005

Far-field radiation patterns with Hermite-Gaussian symmetry in the junction plane have been observed in both p+nn+ and p+n+ GaAs lasers specially constructed with a stripe geometry contact. The Hermite-Gaussian symmetry implies the presence of a lens-like medium between the cleavage plane mirrors. Compared with conventional junction lasers, improved mode control is obtained.
CO-SPUTTERED Au-SiO2 CERMET FILMS
Authors: Miller N. Carl , Shirn George A.
Published: March 2005

Au-SiO2 thin-film cermets have been deposited by simultaneously dc sputtering Au and rf sputtering SiO2. The electrical resistivity varies exponentially with Au concentration, and the microstructure shows discontinuous networks of Au and SiO2.
EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING
Authors: Hu S. M. , Kerr D. R. , Gregor L. V.
Published: March 2005

The hysteresis observed in capacitance-voltage (C-V) measurements on metal-sputtered silicon nitride—silicon structures indicates that carriers are injected predominantly as holes rather than electrons. Shifts in the C-V characteristic after bias-temperature stress at 300°C support this finding. In dc conduction measurements on these samples a linear relation was found between the logarithm of current and the square root of field. The slope of this plot and the independence of current on bias polarity indicate a bulk-limited conduction mechanism of emission of carriers from traps in the silicon nitride.
VISUAL OBSERVATION OF FERROELECTRIC DOMAINS IN TGS
Authors: Shapiro Stephen M. , Gammon Robert W. , Cummins Herman Z.
Published: March 2005

A ferroelectric triglycine sulfate crystal was illuminated by an intense CW laser beam; light scattered by the crystal at right angles to the beam was observed visually and photographed. The visible scattering column was found to be crossed by a series of bright lines oriented parallel to the ferroelectric axis whose appearance under various electric field and temperature conditions strongly suggest that they correspond to boundaries of ferroelectric domains. It therefore appears that this technique will permit direct observation of domain dynamics which, in the past, has been possible only with indirect techniques.
SINGLE-FREQUENCY LIGHT FROM AN ARGON FM LASER
Authors: Osterink L. M. , Targ Russell
Published: March 2005

An experiment is described in which 350 mW of single-frequency light at 5145 Å was obtained using an argon FM laser with an external LiNbO3 modulator. Data on overall conversion efficiency from multifrequency to single-frequency light are presented. Also discussed is the reduction in distortion with increasing optical power. Total sideband content was less than 0.125% of the maximum optical power, corresponding to an ac ripple of 3.5% rms.
DETECTOR PROPERTIES OF PHOTON-MODULATED TUNNELING
Authors: Cohen Julius
Published: March 2005

The use of photon-modulated tunneling for photodetection is demonstrated in a structure of Te–Al2O3–Al. Compared with the response of the Te alone, measured in situ, the tunnel-barrier device is much faster; the detectivity and the spectral response are similar.
SPACE-CHARGE-LIMITED CURRENTS IN HIGH-RESISTIVITY p-TYPE SILICON
Authors: Hagenlocher Arno K.
Published: March 2005

Space-charge-limited currents were studied on p-type silicon in the resistivity range from 10000–50000 Ω·cm. I vs V characteristics showed regions where the current was proportional to V, Vn (1 < n < 2), V2, V3 and to exp V, depending upon the applied field strength. Hall measurements were taken over the entire current range. Due to the large lifetime, a minority carrier space charge is built up at low values of an electric field. Further increases of the applied field lead to double injection.
A MECHANISM FOR DAMAGE IN SOLIDS BY INTENSE LIGHT
Authors: Wasserman A.
Published: March 2005

Electron avalanche due to intraband optical absorption is discussed as a mechanism responsible for laser induced damage in certain insulating crystals.
SYNTHETIC PROUSTITE (Ag3AsS3): A NEW CRYSTAL FOR OPTICAL MIXING
Authors: Hulme K. F. , Jones O. , Davies P. H. , Hobden M. V.
Published: March 2005

Proustite (Ag3AsS3), a new acentric crystal for optical mixing, has been synthesized as large transparent single crystals. It is uniaxial, having point group symmetry 3m. Proustite transmits from 0.6 to 13 μm, and has a large negative birefringence (n0 − nE ∼ 0.2). Using second-harmonic generation from a 1.152-μm laser, we estimate the nonlinear coefficients to be |d22P|=50|d36KDP| and |d31P|=30|d36KDP|. New optical mixing possibilities arise from the exceptionally wide range of processes that can be phase-matched and the large nonlinear coefficients.
EFFECTS OF CHEMISORBED OXYGEN ON THE ELECTRICAL PROPERTIES OF CHEMICALLY SPRAYED CdS THIN FILMS
Authors: Micheletti Frank B. , Mark Peter
Published: March 2005

The Hall mobility μ and conduction electron concentration n of semiconducting, spray-deposited CdS thin films are both reduced by chemisorbed oxygen, the former by a larger factor than the latter. The temperature dependence of n is not affected by chemisorption whereas that of μ is changed from practically no dependence on temperature to a thermally activated dependence. This change is attributed to additional scattering introduced by the chemisorbed ions.
OPTICAL ANALOG OF THE TRANSIENT NUTATION EFFECT
Authors: Tang C. L. , Statz H.
Published: March 2005

The possibility of observing the optical transient nutation effect in CO2 lasers is considered. A formula for the nutation frequency is derived explicitly for the vibrational-rotational transitions in molecules such as CO2.
ON THE PROPERTIES OF THE SPECTRAL BLEACHING IN SATURABLE DYES
Authors: Degiorgio V.
Published: March 2005

It is shown by a rate-equation analysis why hole-burning effects in the absorption line of some organic dyes have been observed only when the saturable absorber is within a laser cavity. The main assumption is that the absorption line is inhomogeneously broadened and that the cross relaxation time between homogeneous components is short compared to the spontaneous decay time, but still finite. An approximate value of the cross relaxation time is also calculated.
RADIAL DRIFT VELOCITIES IN THE ARGON ION LASER
Authors: Mercer G. N. , Chebotayev V. P. , Bennett W. R.
Published: March 2005

Measured values of the ion radial drift velocity in an argon ion laser discharge tube are presented. The data were obtained from observation of the spontaneous emission line shapes of ion and neutral transitions from the end and from the side of the discharge. The relationship of the data to various postulated excitation processes is considered. The effect of the radial drift velocities on the observed saturation of the axial drift velocities is also discussed.
FREQUENCY CONVERSION OF SPIN WAVES IN PULSED MAGNETIC FIELDS
Authors: Rezende S. M. , Morgenthaler F. R.
Published: March 2005

Pulsed frequency conversion of magnetostatic modes in an axially magnetized 〈100〉 rod of yttrium iron garnet has been observed experimentally. Both upward and downward shifts from 20 MHz to 900 MHz for input frequencies between 1 and 3 GHz have been achieved. Theoretical frequency conversion and power gain are obtained from energy and momentum considerations.
ADIABATIC TIME DOMAIN CONVERSION OF HYBRID, MAGNETOELASTIC WAVES IN YIG
Authors: Auld B. A. , Collins J. H. , Zapp H. R.
Published: March 2005

Magnetic field-pulsed adiabatic conversion has been observed in the extraordinary component of linearly-polarized shear waves injected into crystals of YIG, Mn-doped YIG, and Ga-substituted YIG. Measurements in YIG and GaYIG of the frequency splitting between the ordinary and extraordinary waves are in good agreement with the theory presented.
OBSERVATIONS ON COHERENT ELECTRON SCATTERING IN THIN-FILM, COLD CATHODES
Authors: Simmons J. G. , Verderber R. R.
Published: March 2005

Further evidence and additional interpretation is presented of the coherent scattering of hot electrons by the polycrystalline electrode of a thin-film, cold cathode emitter.
REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS
Authors: Fuls E. N. , Hensler D. H. , Ross A. R.
Published: March 2005

Thin films of vanadium dioxide have been formed by reactive sputtering of vanadium in an argon atmosphere doped with a partial pressure of oxygen. The films were deposited on sapphire substrates held at 400°C and exhibit a highly oriented polycrystalline monoclinic structure at room temperature. The semiconductor to metal transition is observed at 345°K with a slight hysteresis with temperature reversal.
SCANNING ELECTRON MICROSCOPY OF A P-16 PHOSPHOR—CATHODOLUMINESCENT AND SECONDARY ELECTRON EMISSION MODES
Authors: Korda E. J. , Pruden L. H. , Williams J. P.
Published: March 2005

A scanning electron microscope comparison of the microstructure of a P-16 phosphor powder employing two independent modes, secondary emission, and cathodoluminescence, has been made. For the cathodoluminescent mode, high resolution and efficiency were obtained by a novel technique utilizing a flexible fiber optic rod. Secondary electron emission and cathodoluminescent micrographs of identical areas at 2400× are described.
LASER SECOND-HARMONIC-INDUCED STIMULATED EMISSION OF ORGANIC DYES
Authors: McFarland B. B.
Published: March 2005

Solutions of several dyes of the fluorescein family have been made to exhibit stimulated emission in the visible when excited by ruby and neodymium second harmonics. Oscillation threshold and conversion efficiencies are given. Depolarization effects in the emission are described.
PROPOSED RESONATOR FOR AN X-RAY LASER
Authors: Bond W. L. , Duguay M. A. , Rentzepis P. M.
Published: March 2005

A simple scheme for an x-ray laser resonator is proposed. It involves a three-dimensional ``puckered-ring'' type arrangement of crystals set at the Bragg angle. The polarization eigenmodes and losses are discussed for such a system.
TWO-PHOTON STEPWISE ABSORPTION IN Er3+ DOPED SALTS
Authors: Richman I. , Chang N. C.
Published: March 2005

The ordinary fluorescence of Er3+ in Y2O3 and LaF3 crystals is observed when the crystals are excited with 6328-Å, He-Ne laser radiation. From the linear power dependence of the 6800-Å fluorescence and the quadratic power dependence of the 5640- and 3900-Å fluorescence on the 6328-Å excitation, a single-photon excitation for the 6800-Å fluorescence and a double-photon stepwise excitation for the 5640- and 3900-Å fluorescence were proposed. The calculated photon flux of the 5640-Å fluorescence based on the two-photon stepwise excitation agrees with the estimated observed value.
THERMAL EFFECTS IN SEMICONDUCTOR REFLECTIVITY ENHANCEMENT
Authors: Birnbaum Milton , Fincher Curtis L. , Stocker Tom L.
Published: March 2005

The time dependence of the enhanced reflectivity of semiconductors, produced and monitored by a pulsed argon ion laser, showed that the electron-hole plasma responsible for the enhanced reflectivity was thermally generated.
CRITICAL THICKNESS AND PERPENDICULAR ANISOTROPY OF EVAPORATED PERMALLOY FILMS WITH STRIPE DOMAINS
Authors: Sugita Yutaka , Fujiwara Hideo , Sato Takashi
Published: March 2005

We report that the critical thickness for the appearance of stripe domains in evaporated permalloy films depends sensitively on vacuum pressure during evaporation and also that the perpendicular anisotropy constant can be obtained from the critical thickness rather precisely. It was found that the perpendicular anisotropy increases with increasing pressures and at high pressures the contribution of the magnetostriction effect to the anisotropy can be neglected.
TIME DEPENDENCE OF THE POWER OUTPUT AT 337 μ IN A CN LASER
Authors: Sochor V. , Brannen Eric
Published: March 2005

The time dependence of the laser output pulse at 337 μ in an acetone and nitrogen gas mixture has been studied using a fast indium antimonide detector. Current pulses from a line-type modulator were varied in length from 2 to 20 μsec with amplitudes from 50 to 180 A. The start of the laser output pulse occurred after the current pulse in the discharge was over, from 6 to 8 μsec after the end of the current pulse. These results indicate that, for the currents used, population inversion and the achievement of conditions allowing laser action, take from 6 to 8 μsec after the discharge ends to become established.
MOLECULAR LASER ACTION IN HYDROGEN AND DEUTERIUM HALIDES
Authors: Deutsch Thomas F.
Published: March 2005

Laser action has been observed on vibrational-rotational transitions between low lying vibrational levels of HX and DX (X = F, Cl, Br) formed by chemical reactions in an electrically pulsed discharge. HF wavelengths, lying between 2.7 and 3.3 μ, and DF wavelengths, lying between 3.6 and 4.2 μ, are listed and identified.
CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORS
Authors: Vérié C. , Ayas J.
Published: March 2005

Using departure from stoichiometry for doping, p-n junctions were prepared from CdxHg1−xTe alloys with 0.15 < x ≤ 0.28, and their current-voltage characteristics were measured at 77°K. The spectral study of these photovoltaic detectors operating at 77°K showed responses from 3 μ up to 17.5 μ. Detectivity measurements at the wavelengths of maximum response of these detectors yielded values at 77°K between 1 and 5 × 109 cm-W−1-Hz1/2 in the range 3 to 14 μ. The speed of these detectors was measured to be <50 nsec, which was also confirmed by the observation of mode beats on the continuous output of a low-power CO2 laser at several frequencies up to 25 MHz.
MILLIMETER WAVE RADIATION FROM INDIUM ANTIMONIDE
Authors: Poehler T. O. , Apel J. R. , Hochberg A. K.
Published: March 2005

The emission spectrum of n-type InSb axially mounted in cylindrical waveguide in both transverse and longitudinal magnetic fields has been studied. The radiation spectrum observed using this new configuration has been found to extend to 102 GHz and to exhibit more uniform spectral characteristics than previously reported. The emission from this axial configuration in a longitudinal magnetic field was unique in that part of the radiation occurred after the electric field pulse had concluded.
HYPERFINE STRUCTURE IN A PARAMAGNETIC 57Fe MÖSSBAUER ABSORBER AT ROOM AND HIGHER TEMPERATURES
Authors: Epstein L. M. , Wachtel A.
Published: March 2005

An iron phosphor composed mainly of alumina and lithia was prepared with enriched iron-57. The Mössbauer spectrum showed magnetic hyperfine structure at room temperature and above, indicating a remarkably long relaxation time. Such structure, if observable, usually requires temperatures near 4°K. A tentative assignment of the most intense lines could be made; this was facilitated by the application of an external transverse magnetic field which increased the contribution of the sextet due to atomic spin 3/2, relative to that due to spin 5/2.
RARE-EARTH-DOPED CdF2 AS A FAR-INFRARED PHOTOCONDUCTOR
Authors: Eisenberger P. , Pershan P. S.
Published: March 2005

Suitably prepared samples of rare-earth-doped CdF2 are found to be good photodetectors from the far infrared (20 μ) well into the visible. Preliminary measurements of D* are of the order of 4 × 109 cm (cps)1/2 W−1 with a response time of the order of 10−6 sec. This represents the first attempt to use an ionic crystal as a far-infrared photoconductor.
COMPETITIVE AND CASCADE COUPLING BETWEEN TRANSITIONS IN THE CW WATER VAPOR LASER
Authors: Pollack M. A. , Bridges T. J. , Tomlinson W. J.
Published: March 2005

CW operation on five additional lines between 47 μm and 79 μm has been observed in the water vapor laser. Competitive and cascade coupling have been shown to exist between the nine presently known CW lines. These interconnections are the first reported for the water vapor laser, and may assist in the identification of the unknown lasèr species and energy levels. Lamb dips have been observed on three additional lines, and pressure-broadened linewidths have been derived from measurements of the dips.
THERMIONIC EMISSION OF ALKALI IONS FROM IMPREGNATED METAL MATRICES
Authors: Chow K. K. , Maddix H. S. , Chorney P.
Published: March 2005

Thermionic emission of alkali ions from matrices composed of sintered mixtures of aluminosilicate and metal powders are studied. Results show that the emission characteristics depend on temperature, effective work function and voltage in a similar way as does electron emission. The effective work function for these composite emitters varies between 1.1 and 3.4 eV. Short-term continuous emission densities up to 4.5 mA/cm2 have been obtained.
USE OF A LASER DIFFRACTION PATTERN TO STUDY SURFACE SELF-DIFFUSION OF METALS
Authors: Bonzel H. P. , Gjostein N. A.
Published: March 2005

A new method is described for continuously monitoring surface self-diffusion in an ultrahigh vacuum environment by means of a laser diffraction pattern obtained from a sinusoidal surface profile. The method permits a continuous measurement of the surface self-diffusion coefficient to be made while simultaneously observing the structure and cleanliness of a surface by low-energy electron diffraction techniques.
PULSED HOLOGRAM FORMATION OF DIFFUSELY REFLECTING OBJECTS
Authors: Fritzler D. , Marom E.
Published: March 2005

Good quality three-dimensional reconstructed images of diffusely reflecting objects were obtained by recording a hologram with Q-switched pulsed ruby laser illumination and viewing it with He–Ne laser light.
LASER EMISSION FROM HF ROTATIONAL TRANSITIONS
Authors: Deutsch Thomas F.
Published: March 2005

Laser action has been observed on pure rotational transitions of HF formed by a chemical reaction in an electrically pulsed discharge. The wavelengths, lying between 10.2 and 21.8 μ, are listed and identified.
SIMULATED REFERENCE IN A COARSELY SAMPLED ACOUSTICAL HOLOGRAM
Authors: Metherell A. F. , El-Sum H. M. A.
Published: March 2005

Four real images were reconstructed from a coarsely sampled acoustical hologram made with an ordinary microphone. An internal reference was used which electronically simulated two plane reference waves impinging on the acoustical hologram plane at an angle of + and -42.55° from the perpendicular. The sound frequency was 20 kHz, with a wavelength of 0.676 in. in air.
THE DENSITY OF STATES IN METAL-SEMICONDUCTOR TUNNELING
Authors: Mahan G. D. , Conley J. W.
Published: March 2005

A new method is suggested for analyzing the tunneling data from metal-semiconductor (Schottky) junctions, and the method is appled to p-type GaAs. The method allows a determination of the argument of the tunneling integral. The results indicate that the tunneling current depends upon the density of states of the semiconductor. This disagrees with Harrison's WKBJ results, but does agree with the recent exact solution of tunneling in Schottky junctions.