bluuebunny/crossref_metadata_2025 huggingface dataset:
Parental understanding and self-blame following sudden infant death: a mixed-methods study of bereaved parents' and professionals' experiences
Authors: Garstang Joanna , Griffiths Frances , Sidebotham Peter
Published: May 2016

Objectives

Improvements in our understanding of the role of modifiable risk factors for sudden infant death syndrome (SIDS) mean that previous reassurance to parents that these deaths were unpreventable may no longer be appropriate. This study aimed to learn of bereaved parents' and healthcare professionals' experiences of understanding causes of death following detailed sudden unexpected death in infancy (SUDI) investigations. The research questions were: How do bereaved parents understand the cause of death and risk factors identified during detailed investigation following a sudden unexpected infant death? What is the association between bereaved parents' mental health and this understanding? What are healthcare professionals' experiences of sharing such information with families?

Design

This was a mixed-methods study using a Framework Approach.

Setting

Specialist paediatric services.

Participants

Bereaved parents were recruited following detailed multiagency SUDI investigations; 21/113 eligible families and 27 professionals participated giving theoretical saturation of data.

Data collection

We analysed case records from all agencies, interviewed professionals and invited parents to complete the Hospital Anxiety and Depression Scale (HADS) and questionnaires or in-depth interviews.

Results

Nearly all bereaved parents were able to understand the cause of death and several SIDS parents had a good understanding of the relevant modifiable risk factors even when these related directly to their actions. Paediatricians worried that discussing risk factors with parents would result in parental self-blame and some deliberately avoided these discussions. Over half the families did not mention blame or blamed no one. The cause of death of the infants of these families varied. 3/21 mothers expressed overwhelming feelings of self-blame and had clinically significant scores on HADS.

Conclusions

Bereaved parents want detailed information about their child's death. Our study suggests parents want health professionals to explain the role of risk factors in SIDS. We found no evidence that sharing this information is a direct cause of parental self-blame.
Topological band order, structural, electronic and optical properties of XPdBi (X = Lu, Sc) compounds
Authors: Narimani M. , Nourbakhsh Z.
Published: May 2016

In this paper, the structural, electronic and optical properties of LuPdBi and ScPdBi compounds are investigated using the density functional theory by WIEN2K package within the generalized gradient approximation, local density approximation, Engel–Vosco generalized gradient approximations and modified Becke–Johnson potential approaches. The topological phases and band orders of these compounds are studied. The effect of pressure on band inversion strength, electron density of states and the linear coefficient of the electronic specific heat of these compounds is investigated. Furthermore, the effect of pressure on real and imaginary parts of dielectric function, absorption and reflectivity coefficients of these compounds is studied.
Study on the effect of process conditions on the thermo-optic coefficient of amorphous silicon films
Authors: Zhou Xiang , Liu Shuang , Tang Haihua , Zhong Zhiyong , Liu Yong
Published: May 2016

A thermo-optical coefficient (TOC) test platform based on FILMeasure-20 was designed and the thermal coefficient of hydrogenated amorphous silicon (a-Si:H) thin films material at 1330 nm was tested. a-Si:H were deposited on the quartz glass using a plasma-enhanced chemical vapor deposition (PECVD) system. Fourier transform infrared spectrometer (FTIR) was used to characterize the infrared spectral feature of films. The hydrogen content of films was influenced by different radio frequency (RF) power and deposition pressure conditions according to the FTIR spectra and theoretical analysis, and the thermo-optic effect of a-Si:H varied with temperature characteristics. Experimental results indicated that selecting the appropriate process conditions to prepare a-Si:H films can effectively increase or avoid the impact of thermo-optical effect on the optical devices.
Fuzzy Optimal Search Plan forN-Dimensional Randomly Moving Target
Authors: El-Hadidy Mohamed Abd Allah
Published: May 2016

This paper presents a search model that finds [Formula: see text]-dimensional randomly moving target in which any information of the target position is not available to the searchers. There exist [Formula: see text]-searchers, starting the searching process from the origin. Rather than finding the conditions that make the expected value of the first meeting time between one of the searchers and the target is finite, this work shows the existence of the fuzzy optimal search plan that minimizes the expected value of the first meeting time. The effectiveness of this method is illustrated by using an example with numerical results.
Synthesis of Tungsten Carbide from Bacterial Cellulose
Authors: Islam Monsur , Martinez-Duarte Rodrigo
Published: May 2016

Here we present preliminary experiments for the synthesis of carbide material using bacterial cellulose as carbon source. We used bacteria cellulose available as Nata de Coco and infiltrated it with tungsten trioxide (WO3) nanoparticles. This composite was heat treated at 1300 °C in nitrogen atmosphere. The XRD pattern confirms the synthesis of tungsten carbide (WC) in the carbonaceous material, though a significant amount of metallic tungsten remained unreacted. SEM images shows that WC particles are present only at the surface of the carbon, which may be a consequence of improper infiltration or collapse of carbon matrix during heat treatment
Shrinkage Analysis of Carbon Micro Structures Derived from SU-8 Photoresist
Authors: Natu Rucha , Islam Monsur , Martinez-Duarte Rodrigo
Published: May 2016

We present preliminary results for the analysis of shrinkage of 3D carbon posts obtained by the pyrolysis of SU-8 precursor structures, in a technique known as Carbon MEMS. Though the shrinkage in the carbon structures is highly reproducible, there is a strong dependence of this shrinkage on the initial dimensions of the SU-8 pillars. Our hypothesis is that the shrinkage depends upon the area available for degassing during carbonization. In this work, this idea is used to analyze shrinkage in cylindrical pillars. The results obtained are studied based on the ratio of lateral and top surface area available for degassing and reinforce the hypothesis about the dependence on surface area.
In-Vivo Characterization of Glassy Carbon µ-Electrodes and Histological Analysis of Brain Tissue after Chronic Implants
Authors: Vomero Maria , Dryg Ian , Maxfield Tyler , Shain William , Perlmutter Steve , Kassegne Sam
Published: May 2016

For neural applications, materials that combine excellent electromechanical properties with long-term performance capabilities are ideal. Good electrodes should be able to not only adapt to eventual physiological changes in the body, but also perform without damaging the host tissue. The combination of these characteristics is difficult to accomplish, since the ability of a material to undergo changes is often accompanied by the formation of reaction products that might interact with the surrounding tissue. Glassy carbon is a biocompatible and electrochemically inert material with tunable mechanical and electrical properties, high charge injection capacity and great resistance to corrosion. These merits motivate the use of such material for neural applications, and in particular for the realization of electrocorticography (ECoG) microelectrodes that can electrically sense and stimulate brain activity. We demonstrate that glassy carbon electrodes do not trigger specific immune responses and are able to maintain stable impedance after several weeks of implantation.
Fabricating Suspended Carbon Wires Using SU-8 Photolithography
Authors: Giogli Emanuele , Islam Monsur , Martinez-Duarte Rodrigo
Published: May 2016

We present initial results towards the fabrication of suspended structures between photo-patterned high aspect ratio SU-8 posts as precursors for carbon wires and bridges. Initial results show that carbon wires of diameter as low as 800 nm can be formed. SU-8 is an epoxy-based negative photoresist, commonly used as high quality carbon precursor in carbon MEMS technology. This work has two main goals: 1) characterize the formation of suspended structures between SU-8 posts depending on the photolithography exposure setup and time of the exposure, the shape and size of the anchors and the gap between them; and 2) examine the shrinkage during carbonization. The suspended structures were characterized using optical and electron microscopy. Future work is to extend the characterization to wafers with different aspect ratio, and different types of mask contact during the exposure of the photoresist.
(Invited) Non-Volatile Resistive Memory: Technology Capable of Revolutionary Compromises
Authors: Navarro Gabriele , Vianello Elisa , Sousa Véronique , Molas Gabriel , Nowak Etienne , De Salvo Barbara , Perniola Luca
Published: May 2016

Non-Volatile Resistive Memory (NVRM) such as Phase-Change Memory, Oxide-based Memory and Conductive Bridging Memory has rapidly increased in maturity in the last decade. In a memory market context dominated by DRAM and Flash technologies, the evolving memory hierarchy and the strong differentiation of the applications portfolio represent a real opportunity for NVRM to emerge. The real revolution of this technology resides in its versatility made possible by general trade-offs existing between the different NVRM performances, highlighted in the last years by the research and the development in several fields (e.g. materials science, engineering, etc.). We present here some of these trade-offs, and how they can be used to target specific applications.
Lateral Non-Uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide
Authors: Chen Jun-Yao , Kao Wei-Chih , Hwu Jenn-Gwo
Published: May 2016

In order to reduce the degradation caused by lateral non-uniformity (LNU) of gate oxides in metal-oxide-semiconductor (MOS) devices, a method to ameliorate the lateral oxide uniformity was proposed. By adopting the anodic oxidation compensation (ANO-compensation) technique to compensate the embedded aluminum layer, significant uniformity improvements were found in capacitance per unit area-voltage (C’-V) and current density-voltage (J-V) characteristics, and the percentage dispersions of capacitance per unit area and current density in accumulation regime also give the support to uniformity improvement. Besides, the outcomes of reliability tests also evidence that the LNU is reduced. Hence, with the advantages of superior oxide uniformity, the enhanced response in inversion capacitance was observed. At last, nitrate solution is used for validating the advantage of anodic oxidation compensation, and the J-V and C-V characteristics show that anodic oxidation compensation is necessary for fabricating reliable MOS-based devices.
(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology
Authors: Larcher Luca , Sereni Gabriele , Vandelli Luca
Published: May 2016

In this work we present a novel simulation-based methodology for the defect spectroscopy in dielectric materials. The cross-correlated simulation of electrical characteristics (IV, CV, GV, BTI, charge pumping and noise) is exploited to profile the properties and energy-space distribution of the defects within the oxide bandgap. This novel defect spectroscopy technique will be applied to three case studies, i.e. Si- MOSFET gate stack optimization with either Si and beyond Si channel (InGaAs), and STO MIM DRAM capacitor scaling. The integration of these methods into the process optimization will lead to a strong reduction of the time/cost required for the development of novel device architectures.
(Invited) Hardware Security to Mitigate Threats to Networked More-Than-Moore Sensors
Authors: Obeng Yaw S.
Published: May 2016

Networked sensors (a. k. a., Internet of Things (IoT)) represents a new era in the evolution of telecommunications made possible by the reduced cost of performance in electronic devices. This is the era where even the most mundane items are connected to, and communicate with each other, on massive networks. This paper examines the issues pertaining to, and efforts at improving, the hardware security of the interconnected devices. The paper highlights a number of academia and semiconductor industry-led ongoing work on improving hardware security.
Introduction of a High Selectivity Etching Process with Advanced SiNx Etch Gas in the Fabrication of FinFET Structures
Authors: Kojiri Takashi , Suwa Tomoyuki , Hashimoto Keiichi , Teramoto Akinobu , Kuroda Rihito , Sugawa Shigetoshi
Published: May 2016

We evaluated the etching characteristics of a developed prototype hydrofluorocarbon-based SiNx etch gas. The developed gas has higher etching selectivity to poly-Si and SiO2 than conventional SiNx etch gases and a maximum selectivity of 62 to poly-Si and of over 100 to SiO2 were obtained. These highly selective etching chemicals are required for the development of three-dimensional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). In this work, we focused on Fin Field Effect Transistors (FinFETs), and in particular, FinFET structures that were fabricated by application of the developed gas to the gate spacer etch process. The FinFET structure fabricated with the developed gas is superior to that of the structure fabricated with CH3F, which is conventionally used for SiNx etching. We found that the developed gas is a promising etching gas for future high selectivity etching technologies.
(Invited) Vertical Nanowire FET Integration and Device Aspects
Authors: Veloso Anabela , Altamirano-Sánchez Efraín , Brus Stephan , Chan B. T. , Cupak Miroslav , Dehan Morin , Delvaux Christie , Devriendt Katia , Eneman Geert , Ercken Monique , Huynh-Bao Trong , Ivanov Tsvetan , Matagne Philippe , Merckling Clement , Paraschiv Vasile , Ramesh Siva , Rosseel Erik , Rynders Luc , Sibaja-Hernandez Arturo , Suhard Samuel , Tao Zheng , Vecchio Emma , Waldron Niamh , Yakimets Dmitry , De Meyer Kristin , Mocuta Dan , Collaert Nadine , Thean Aaron
Published: May 2016

This work reports on vertical nanowire FET devices (VNWFETs) with a gate-all-around (GAA) configuration, which offer new, promising opportunities to enable further CMOS scaling and increased layout efficiency. Compared to triple-gate finFETs or lateral GAA-NWFETs, these devices are shown to have the potential for exhibiting lower parasitic RC and reduced power consumption at 5nm node design rules. They can also allow up to 30% denser SRAM bitcells with improved read and write stability, smaller minimum operating voltages (Vmin), and lower standby leakage values. A comprehensive overview of some key integration aspects for VNWFET fabrication will also be addressed here, covering: VNW arrays, gate/top electrodes, and bottom/top isolation layers formation. In addition, we also present alternative solutions to obtain improved process control and to overcome etch-layout dependences which are especially critical within the context of vertical device integration using a channel-first approach.
(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective
Authors: Moens Peter , Banerjee Abhishek , Constant Aurore , Coppens Peter , Caesar Markus , Li Zilan , Vandeweghe Steven , Declercq Frederick , Padmanabhan Balaji , Jeon Woochul , Guo Jia , Salih Ali , Tack Marnix , Meneghini Matteo , Dalcanale Stefano , Tajilli A , Meneghesso Gaudenzio , Zanoni Enrico , Uren Mike , Chatterjee Indranil , Karboyan Serge , Kuball Martin
Published: May 2016

Although astounding performance is already proven by many research papers, the widespread adoption of GaN power devices in the market is still hampered by (1) yield and reproducibility ; (2) cost ; (3) reliability. All three factors are to be considered, but to convince customers to adopt GaN power devices, proven device and product reliability is a must. Cost is kept acceptably low by growing the GaN epi stack on 6 inch and 8inch Si substrates, and by processing the GaN power device technology in standard CMOS production lines. This paper will focus on the most important intrinsic reliability mechanisms for GaN power devices. It will cover gate dielectric reliability, Ohmic contact reliability, accelerated drain stress testing (high temperature reverse bias--HTRB) and high voltage device wear-out testing (high voltage off-state stress--HVOS). Acceleration models are discussed A measurement strategy to extract valuable information about the physical properties of the buffer layers (e.g. activation energies of the traps, conduction mechanisms, …) based on simple transmission line structures, is outlined.
Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O2 Post Deposition Annealing
Authors: Koda Yasumasa , Sugita Hisaya , Suwa Tomoyuki , Kuroda Rihito , Goto Tetsuya , Teramoto Akinobu , Sugawa Shigetoshi
Published: May 2016

High-k oxide material with a high capacitance density, low leakage current density, high-dielectric breakdown voltage and small quadruple voltage coefficient of the capacitance is important for on-chip metal-insulator-metal (MIM) capacitors as well as gate insulators for semiconductor power devices. So in order to improve the quality of such films, a post-deposition process, such as annealing is expected to be effective. In this paper, we carried out various annealing steps after deposition of Al2O3 films with thermal ALD. The electrical characteristics of these Al2O3 films were evaluated. Annealing was proven to be effective in improving the Al2O3 film quality decrease the leakage current and the fixed charge. For O2 annealing at 400°C of MIM capacitor structures containing Al2O3 films deposited with thermal ALD using H2O at a relatively low temperature of 75°C. We achieved a leakage current density of 10-9A/cm2 level and a capacitance density above 10fF/μm2. However, it it is necessary to improve the voltage dependence of the capacitance. For future optimization not only the post-deposition process should be investigated but also the ALD deposition itself, including the selection of the oxidizing co-reactant.
(Invited) Pattern and Emissivity Insensitive Dopant Activation and Silicide Contact Formation Annealing in a Hot Wall Rapid Thermal Annealing System
Authors: Yoo Woo Sik
Published: May 2016

Local temperature non-uniformity during rapid thermal annealing (RTA) is an important contributor to within-die process variations which cause significant problems for advanced complimentary metal-oxide-semiconductor (CMOS) device manufacturing. RTA-induced variations strongly depend on circuit layout patterns and optical properties of exposed materials on the surface of the Si wafers. To reduce the “pattern effect”, a hot wall (furnace-based) RTA approach has been proposed and compared with a conventional cold wall (lamp-based) RTA approach in device manufacturing. Nickel and cobalt silicide formations on implanted single crystalline Si in the source/drain region, and implanted poly-Si word lines of memory devices were studied over wide ranges of RTA temperature and time using a hot wall RTA system, which uses mainly natural convection and conduction through ambient gas. Differences between cold wall (radiant) and hot wall (non-radiant) heating on the silicide formation and dopant profiles are compared. The hot wall RTA resulted in superior process uniformity and repeatability regardless of pattern size and emissivity differences on device wafers. Local metal film thickness variations and its interaction with local temperature non-uniformity during RTA are identified as major contributors for the silicidation process variations such as non-uniformity and non-repeatability.
Novel Oxidants and Sources of Nitrogen for Atomic Layer Deposition
Authors: Alvarez Daniel , Spiegelman Jeffrey , Heinlein Ed , Holmes Russell , Ramos Chris , Leo Mark , Webb Sean
Published: May 2016

Significant effort has gone into developing novel metal precursors for Atomic Layer Deposition. This effort has been primarily driven by the industry need for new high K materials and low temperature deposition for metal nitride films. The need for novel oxidants and sources of nitrogen has been largely ignored. This paper focuses on delivery of anhydrous hydrogen peroxide and anhydrous hydrazine for ALD applications.
Crystallinity Evaluation of Low Temperature Polycrystalline Silicon Thin Film Using UV/Visible Raman Spectroscopy
Authors: Yokogawa Ryo , Takahashi Kazuya , Komori Katsuhiko , Hirota Yoshihiro , Sawamoto Naomi , Ogura Atsushi
Published: May 2016

Low temperature poly-Si (LTPS) is one of the most important high mobility channel materials for thin film transistors (TFTs). However, the improvement of the LTPS TFT performance is limited by the grain size and crystallinity variation. Thus, advanced nondestructive and high-resolution evaluation techniques are needed for LTPS thin film to monitor its crystallinity and grain size distribution. We evaluated the crystallinity of LTPS thin film during the fabrication process with various conditions using UV/visible Raman spectroscopy. As a result, we confirmed from Raman imaging measurements that a-Si deposited at higher temperature and lower pressure is crystallized rapidly. It can be considered that slow crystallization is caused by strong tensile strain and high hydrogen concentration in LTPS thin films. Furthermore, good crystallinity can be obtained with increasing annealing duration and deposition temperature of a-Si. In conclusion, we believe Raman spectroscopy, especially when used as imaging technique, is useful for in-line process evaluation.
Fabrication of Graphene/Porous Silicon Nitride Material for Field-Effect Transistors
Authors: Ge Daohan , Qian Dongliang , Chen Guanggui , Zhang Liqiang , Ren Naifei
Published: May 2016

In this work, the preparation of graphene structures transferred to the silicon nitride substrates with two different morphologies (holes and grooves) is demonstrated. The graphene layer is deposited on the bottom of the holes and grooves after the transfer process, and its properties have been investigated. The 2D peak frequencies of grapheme (both the H-graphene and the G-graphene) in hole and groove shift left. The strain in G-graphene is larger than H-graphene, while the surface roughness of H-graphene is bigger than G-graphene. This means the morphologies of the pattern will also influence the strain in graphene, which is expected to supply a way to improve the properties of micro/nano-devices.
(Invited) Rapid In-Situ Carbon and Oxygen Cleaning of In0.53Ga0.47As(001) and Si0.5Ge0.5(110) Surfaces via a H2 RF Downstream Plasma
Authors: Wolf Steven , Edmonds Mary , Jiang Ximan , Droopad Ravi , Yoshida Naomi , Dong Lin , Galatage Rohit , Siddiqui Shariq , Sahu Bhagawan , Kummel Andrew
Published: May 2016

The In0.53Ga0.47As(001) and Si0.5Ge0.5(110) surfaces were cleaned using a downstream RF plasma. On the air-exposed In0.53Ga0.47As(001) surface, a 2 second 100 millitorr H2 plasma dose fully removed carbon and oxygen. On the ex-situ wet cleaned Si0.5Ge0.5(110) surface, nearly all carbon and oxygen are removed via a 2 second exposure of 5% H2 in Ar plasma. To prevent oxygen deposition from the plasma tube while maximizing the atomic H flux, for Si0.5Ge0.5(110), the plasma power, pressure, and gas composition must be controlled. The Si0.5Ge0.5(110) surface is more sensitive than the In0.53Ga0.47As(001) surface to trace oxygen in the plasma stream consistent with the higher heat of formation per Si of SiO2 than the heat of formation per Ga of Ga2O3. The higher heat of formation of SiO2 is expected to both increase oxygen adsorption and prevent the atomic H from forming volatile products with SiO2 on Si0.5Ge0.5(110), in contrast to In0.53Ga0.47As(001).
(Invited) CMOS Compatible High Performance IIIV Devices: Opportunities and Challenges
Authors: Sun Yanning , Shiu Kuen-Ting , Cheng Cheng-Wei , Majumdar Amlan , Bruce Robert , Yau Jeng-bang , Farmer Damon , Zhu Yu , Hopstaken Marinus , Frank Martin M. , Ando Takashi , Lee Ko-tao , Rozen John , Sadana Devendra K. , Narayanan Vijay , Mo Renee T. , Leobandung Effendi
Published: May 2016

Self-aligned InGaAs channel MOSFET has been demonstrated on both InP and Si substrate using CMOS compatible device structure and process flow. Peak transconductance GMSAT over 2200 μS/μm has been achieved, at L
EFF = 30 nm and supply voltage V
DD = 0.5 V. These processes and devices are well-suited for future generations of high-performance CMOS applications at short gate lengths and tight gate pitches.
(Invited) Electrothermal Performance Optimization of III-Nitride HEMTs Capped with Nanocrystalline Diamond
Authors: Tadjer Marko J. , Anderson Travis J , Feygelson Tatyana I , Hobart Karl D , Ancona Mario G. , Koehler Andrew D. , Hite Jennifer K , Wheeler Virginia D. , Pate Bradford B , Kub Francis J , Eddy Charles R.
Published: May 2016

AlGaN/GaN high electron mobility transistors (HEMT) capped with nanocrystalline diamond (NCD) have been demonstrated in the past to outperform electrically and thermally their SiN-passivated counterparts. However, a major process limitation for the integration of a diamond heat spreader has been the O2-plasma damage in the gate opening associated with etching the diamond cap. A sacrificial gate (SG) process for plasma damage-free integration of top-side NCD capping layers is thus developed. On HEMTs with a SG, the addition of a NCD cap did not cause any significant degradation in mobility, carrier density, or sheet resistance. Hall characterization showed minimal (~6%) reduction in sheet carrier density and commensurate increase in sheet resistance, while maintaining mobility and on-state drain current density. Pulsed IDS and on-resistance were improved, indicating that a 10 nm SiN/500 nm NCD could offer improved AlGaN surface passivation compared to a more conventional 100 nm thick PECVD SiN film.
(Invited) Improved GaN Based Hydrogen Sensors
Authors: Baik Kwang Hyeon , Kim Jimin , Jang Soohwan
Published: May 2016

To improve the conventional GaN based hydrogen sensor devices, catalytically active Pt nanonetworks were applied to active gate area of AlGaN/GaN HEMT, and surface roughening of active area in nonpoalar a-plane and semipolar GaN diode by using Photo-electrochemical etching was employed. When the active gate region of an AlGaN/GaN sensor is functionalized with platinum nanostructures that contain a larger surface area offering more active sites for hydrogen molecules to be adsorbed, the drain current response was dramatically improved. Also, the extended rough surface of the diodes showed improved hydrogen detection sensitivity due to the presence of more available adsorption sites, resulting in effective variations of the Schottky barrier height.
The CNT Network Biosensor Array for a General Immunoassay Platform
Authors: Lim Jaeheung , Lee Hoseok , Choi Seongwook , Lee Won Cheol , Park Young June
Published: May 2016

The carbon nanotube network based electrical biosensor platform for a general immunoassay is reported. The platform has three features; surface modification of the channel for attaching the antibody as the probe molecules, 2-terminal asymmetric electrode structure and the electrical pulse bias for monitoring current during the binding events with the target molecules. Preliminary results for detecting the Alpha Fetoprotein as the biomarker of hepatoma have been reported to show the potential of the platform as a general immunoassay.
Development of Functional Triboelectric Nanogenerators for Antibacterial Applications
Authors: Ke Yi-Yun , Chou Ting-Mao , Lin Zong-Hong
Published: May 2016

Pathogenic bacteria that give rise to diseases every year remain a major health concern. In recent years, Te-based nanomaterials have been approved as new and efficient antibacterial agents. In this paper, we developed the approach to directly grow Te and Te-Au nanowires onto commercial carbon fiber fabrics and demonstrated that they can be used as efficient antibacterial materials. Upon the combining of triboelectric nanogenerator and capacitor, we successfully demonstrated the concept of self-powered antimicrobial application. This is because during the electrolysis process, the release of tellurite ions would help to suppress the growth of bacteria. In addition, compared to Ag nanoparticles that are commonly used as antibacterial reagents, Te and Te-Au nanowires can provide higher antibacterial activity and lower toxicity.
Tellurium Nanowire Arrays-Based Nanogenerators for Thermal Energy Harvesting
Authors: Li Ying-Chun , Lin Zong-Hong
Published: May 2016

Thermoelectric devices are effective in harvesting energy from waste heat with a temperature difference relative to the environment, which can be applied in vehicles, aircrafts, and power plants. In our research, we developed a thin, light-weight, and flexible thermoelectric nanogenerator based on the nanocomposite of Te/Ag2Te nanowire arrays and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The Seebeck coefficient of the nanocomposite was determined to be 130 μV/K. A linear relationship between the output voltage and the temperature difference across the thermoelectric nanogenerator was observed. Not only for the purpose of energy harvesting, the thermoelectric nanogenerator can also function as a self-powered sensor for water temperature measurement.
Nanoparticle Synthesis and Oxygen Anion Diffusion in Double Perovskite GdBaCo2-xFexO5+δ Electrodes for SOFC
Authors: Anjum Uzma , Khatoon Nafeesa , Sardar Meryam , Agarwal Manish , Vashishtha Saumye , Haider M Ali
Published: May 2016

Development of an intermediate temperature solid oxide fuel cell essentially require the synthesis of electrocatalytically active nanostructured cathode materials with fast oxygen anion transport and surface exchange properties. Double perovskite structured GaBaCo2O5+δ (GBCO) electrode showing an average particle size of less than 20 nm was synthesized by a bio-milling approach. In parallel, molecular dynamics (MD) simulations were utilised to calculate the effect of Fe doping at the B-site on the oxygen anion diffusivity of GdBaFexCo2-xO5.5 double perovskites. The oxygen diffusion was observed to be preferential in the a-b plane of GBCO with a value of D=2.8 x 10-7 cm2 s-1, calculated at 1173 K. The change in diffusion coefficient (D=1.95 x 10-7 cm2 s-1 at 1173 K) was negligible on doping 50% Fe in the structure. However, in 100% Fe substituted structure, GdBaFe2O5.5 (GBFO5.5), the diffusivity was significantly reduced (D=2 x 10-8 cm2 s-1 at 1173 K).
(Invited) High Performance Nano-Ceria Electrodes for Solid Oxide Cells
Authors: Graves Christopher , Martinez Lev , Sudireddy Bhaskar Reddy
Published: May 2016

In solid oxide electrochemical cells, the conventional Ni-based fuel-electrodes provide high electrocatalytic activity but they are often a major source of long-term performance degradation due to carbon deposition, poisoning of reaction sites, Ni mobility, etc. Doped-ceria is a promising mixed ionic-electronic conducting oxide that could solve these issues if it can be integrated into an appropriate electrode structure. Two new approaches to obtain high-performance nanostructured doped-ceria electrodes are highlighted. The first is an infiltration-based architecture with Ce0.8Pr0.2O2-δ forming the active surfaces on a porous backbone with embedded electronic current collector material, yielding one of the highest performances reported for an electrode that operates either on fuel or oxidant. The second is a nano-Ce0.9Gd0.1O2-δ thin film prepared by spin-coating, which provides an unprecedented electrode polarization resistance of ~0.01 Ω cm2 at 650 °C in H2/H2O. These results demonstrate that nano-ceria has the ability to achieve higher performance than Ni-based electrodes and show that the main challenge is obtaining sufficient electronic current collection without adding too much inactive material.
Effects of hypervolemia by protein and glucose supplementation during aerobic training on thermal and arterial pressure regulations in hypertensive older men
Authors: Kataoka Yufuko , Kamijo Yoshi-ichiro , Ogawa Yu , Sumiyoshi Eri , Nakae Mari , Ikegawa Shigeki , Manabe Kazumasa , Morikawa Mayuko , Nagata Masashi , Takasugi Satoshi , Masuki Shizue , Nose Hiroshi
Published: May 2016

In Japan, the incidence of heat illness in older people has rapidly increased during midsummer in the last decade, and we suggested that whey-protein+carbohydrate supplementation during aerobic training would increased plasma volume (PV) to enhance thermoregulatory adaptation in older men ( J Appl Physiol 107: 725-733, 2009); however, >60% of people age 65 and older suffer from hypertension, and the symptoms may be worsened by hypervolemia. To examine this, we randomly divided 21 older men (∼69 yr) with ∼160 mmHg for systolic and ∼90 mmHg for diastolic blood pressure at rest into two groups: Glc ( n = 11) consuming glucose alone (25 g) and Pro-Glc ( n = 10) consuming whey protein (10 g) + glucose (15 g), immediately after cycling exercise at 60–75% of peak aerobic capacity (V̇o2 peak) for 60 min/day, 3 days/wk, for 8 wk. Before and after training, we measured PV (dye dilution), baroreflex sensitivity (BRS) of heart rate (Valsalva maneuver), and carotid arterial compliance (CAC) from carotid arterial diameter (ultrasound imaging) responses to pulsatile arterial pressure change (photoplethysmography) at rest. Additionally, we measured esophageal temperature (Tes) and forearm skin blood flow (plethysmography) during exercise at 60% pretraining V̇o2 peak for 20 min in a warm environment. We found that the forearm skin vascular conductance response to increased Tes was enhanced in Pro-Glc with increased PV, but this was not found in Glc; however, despite the increased PV, arterial blood pressures rather decreased with increased CAC and BRS in Pro-Glc. Thus, the prescription was applicable to older men with hypertension to prevent heat illness during exercise.
Construction of Gene Regulatory Networks Using Recurrent Neural Networks and Swarm Intelligence
Authors: Khan Abhinandan , Mandal Sudip , Pal Rajat Kumar , Saha Goutam
Published: May 2016

We have proposed a methodology for the reverse engineering of biologically plausible gene regulatory networks from temporal genetic expression data. We have used established information and the fundamental mathematical theory for this purpose. We have employed the Recurrent Neural Network formalism to extract the underlying dynamics present in the time series expression data accurately. We have introduced a new hybrid swarm intelligence framework for the accurate training of the model parameters. The proposed methodology has been first applied to a small artificial network, and the results obtained suggest that it can produce the best results available in the contemporary literature, to the best of our knowledge. Subsequently, we have implemented our proposed framework on experimental (in vivo) datasets. Finally, we have investigated two medium sized genetic networks (in silico) extracted from GeneNetWeaver, to understand how the proposed algorithm scales up with network size. Additionally, we have implemented our proposed algorithm with half the number of time points. The results indicate that a reduction of 50% in the number of time points does not have an effect on the accuracy of the proposed methodology significantly, with a maximum of just over 15% deterioration in the worst case.
Radar Emission Sources Identification Based on Hierarchical Agglomerative Clustering for Large Data Sets
Authors: Dudczyk Janusz
Published: May 2016

More advanced recognition methods, which may recognize particular copies of radars of the same type, are called identification. The identification process of radar devices is a more specialized task which requires methods based on the analysis of distinctive features. These features are distinguished from the signals coming from the identified devices. Such a process is called Specific Emitter Identification (SEI). The identification of radar emission sources with the use of classic techniques based on the statistical analysis of basic measurable parameters of a signal such as Radio Frequency, Amplitude, Pulse Width, or Pulse Repetition Interval is not sufficient for SEI problems. This paper presents the method of hierarchical data clustering which is used in the process of radar identification. The Hierarchical Agglomerative Clustering Algorithm (HACA) based on Generalized Agglomerative Scheme (GAS) implemented and used in the research method is parameterized; therefore, it is possible to compare the results. The results of clustering are presented in dendrograms in this paper. The received results of grouping and identification based on HACA are compared with other SEI methods in order to assess the degree of their usefulness and effectiveness for systems of ESM/ELINT class.
Occurrence of Potential Bacterial Pathogens and Their Antimicrobial Susceptibility Patterns Isolated from Herbal Medicinal Products Sold in Different Markets of Gondar Town, Northwest Ethiopia
Authors: Yesuf Abdela , Wondimeneh Yitayih , Gebrecherkos Teklay , Moges Feleke
Published: May 2016

Background. The World Health Organization estimates that about 80% of the world’s population uses herbal medicine to treat various illnesses as means of primary healthcare. However, during preparation, herbal plants may be exposed to contamination by potential pathogens, and this may lead to infections. The aim of this study was to determine bacterial contamination of herbal medicinal products and to assess the antibiotic susceptibility pattern of the isolated bacteria. Methods. A cross-sectional study was conducted from January 1 to May 25, 2013, at Gondar Town. A total of 55 samples used as oral, local, and intranasal routes of administration were collected from the herbalists. Results. In the present study the total aerobic bacterial count ranges from zero to 2.41×109 CFU/g with mean count of 1.99×108 CFU/g or mL while the total coliform count showed an average of 1.05×108 CFU/g or mL with a range of zero to 2.1×109 CFU/g. The most common bacteria isolated were Bacillus spp. followed by Enterobacter spp., Shigella dysenteriae, and Salmonella spp. Multiple drug resistance was not uncommon and it was found that 125 (83.4%) of the isolates were resistant to two or more antibiotics. Conclusion. Herbal medicinal preparations were highly contaminated with pathogenic microorganisms with high microbial load. Most of the isolates have multiple drug resistance. Using those contaminated herbal medicines may lead to infection of other health related risks. Therefore, this warrants urgent training of herbalists and management scale-up for quality and safety of medicinal plants.
Seismic Behavior of Corroded RC Bridges: Review and Research Gaps
Authors: Andisheh Kaveh , Scott Allan , Palermo Alessandro
Published: May 2016

Chloride-induced corrosion and its effect on structural and seismic performance of reinforced concrete (RC) structures have been the topic of several research projects in past decades. This literature review summarizes the state of the art by presenting a brief description of chloride-induced corrosion, its main characteristics and influencing factors, a summary of experimental published data, and existing corrosion-induced deterioration models together with numerical and experimental methods used to evaluate corroded RC bridge pier. This literature review highlights the need for reliable deterioration models for RC structures and appropriate analysis methods are needed for design of new structures or assessment of existing civil engineering structures especially in seismic areas.
A New Uncertain Analysis Method for the Prediction of Acoustic Field with Random and Interval Parameters
Authors: Wang Mingjie , Wan Zhimin , Huang Qibai
Published: May 2016

For the frequency response analysis of acoustic field with random and interval parameters, a nonintrusive uncertain analysis method named Polynomial Chaos Response Surface (PCRS) method is proposed. In the proposed method, the polynomial chaos expansion method is employed to deal with the random parameters, and the response surface method is used to handle the interval parameters. The PCRS method does not require efforts to modify model equations due to its nonintrusive characteristic. By means of the PCRS combined with the existing interval analysis method, the lower and upper bounds of expectation, variance, and probability density function of the frequency response can be efficiently evaluated. Two numerical examples are conducted to validate the accuracy and efficiency of the approach. The results show that the PCRS method is more efficient compared to the direct Monte Carlo simulation (MCS) method based on the original numerical model without causing significant loss of accuracy.
An EP2 Agonist Facilitates NMDA-Induced Outward Currents and Inhibits Dendritic Beading through Activation of BK Channels in Mouse Cortical Neurons
Authors: Hayashi Yoshinori , Morinaga Saori , Liu Xia , Zhang Jing , Wu Zhou , Yokoyama Takeshi , Nakanishi Hiroshi
Published: May 2016

Prostaglandin E2(PGE2), a major metabolite of arachidonic acid produced by cyclooxygenase pathways, exerts its bioactive responses by activating four E-prostanoid receptor subtypes, EP1, EP2, EP3, and EP4. PGE2enables modulatingN-methyl-D-aspartate (NMDA) receptor-mediated responses. However, the effect of E-prostanoid receptor agonists on large-conductance Ca2+-activated K+(BK) channels, which are functionally coupled with NMDA receptors, remains unclear. Here, we showed that EP2 receptor-mediated signaling pathways increased NMDA-induced outward currents (INMDA-OUT), which are associated with the BK channel activation. Patch-clamp recordings from the acutely dissociated mouse cortical neurons revealed that an EP2 receptor agonist activatedINMDA-OUT, whereas an EP3 receptor agonist reduced it. Agonists of EP1 or EP4 receptors showed no significant effects onINMDA-OUT. A direct perfusion of 3,5′-cyclic adenosine monophosphate (cAMP) through the patch pipette facilitatedINMDA-OUT, which was abolished by the presence of protein kinase A (PKA) inhibitor. Furthermore, facilitation ofINMDA-OUTcaused by an EP2 receptor agonist was significantly suppressed by PKA inhibitor. Finally, the activation of BK channels through EP2 receptors facilitated the recovery phase of NMDA-induced dendritic beading in the primary cultured cortical neurons. These results suggest that a direct activation of BK channels by EP2 receptor-mediated signaling pathways plays neuroprotective roles in cortical neurons.
Mitochondrial Epigenetic Changes Link to Increased Diabetes Risk and Early‐Stage Prediabetes Indicator
Authors: Zheng Louise D. , Linarelli Leah E. , Brooke Joseph , Smith Cayleen , Wall Sarah S. , Greenawald Mark H. , Seidel Richard W. , Estabrooks Paul A. , Almeida Fabio A. , Cheng Zhiyong
Published: May 2016

Type 2 diabetes (T2D) is characterized by mitochondrial derangement and oxidative stress. With no known cure for T2D, it is critical to identify mitochondrial biomarkers for early diagnosis of prediabetes and disease prevention. Here we examined 87 participants on the diagnosis power of fasting glucose (FG) and hemoglobin A1c levels and investigated their interactions with mitochondrial DNA methylation. FG and A1c led to discordant diagnostic results irrespective of increased body mass index (BMI), underscoring the need of new biomarkers for prediabetes diagnosis. Mitochondrial DNA methylation levels were not correlated with late‐stage (impaired FG or A1c) but significantly with early‐stage (impaired insulin sensitivity) events. Quartiles of BMI suggested that mitochondrial DNA methylation increased drastically from Q1 (20 < BMI < 24.9, lean) to Q2 (30 < BMI < 34.9, obese), but marginally from Q2 to Q3 (35 < BMI < 39.9, severely obese) and from Q3 to Q4 (BMI > 40, morbidly obese). A significant change was also observed from Q1 to Q2 in HOMA insulin sensitivity but not in A1c or FG. Thus, mitochondrial epigenetic changes link to increased diabetes risk and the indicator of early‐stage prediabetes. Further larger‐scale studies to examine the potential of mitochondrial epigenetic marker in prediabetes diagnosis will be of critical importance for T2D prevention.
Background Radiance Estimation for Gas Plume Quantification for Airborne Hyperspectral Thermal Imaging
Authors: Idoughi Ramzi , Vidal Thomas H. G. , Foucher Pierre-Yves , Gagnon Marc-André , Briottet Xavier
Published: May 2016

Hyperspectral imaging in the long-wave infrared (LWIR) is a mean that is proving its worth in the characterization of gaseous effluent. Indeed the spectral and spatial resolution of acquisition instruments is steadily decreasing, making the gases characterization increasingly easy in the LWIR domain. The majority of literature algorithms exploit the plume contribution to the radiance corresponding to the difference of radiance between the plume-present and plume-absent pixels. Nevertheless, the off-plume radiance is unobservable using a single image. In this paper, we propose a new method to retrieve trace gas concentration from airborne infrared hyperspectral data. More particularly the outlined method improves the existing background radiance estimation approach to deal with heterogeneous scenes corresponding to industrial scenes. It consists in performing a classification of the scene and then applying a principal components analysis based method to estimate the background radiance on each cluster stemming from the classification. In order to determine the contribution of the classification to the background radiance estimation, we compared the two approaches on synthetic data and Telops Fourier Transform Spectrometer (FTS) Imaging Hyper-Cam LW airborne acquisition above ethylene release. We finally show ethylene retrieved concentration map and estimate flow rate of the ethylene release.
CAR T Cell Therapy: A Game Changer in Cancer Treatment
Authors: Almåsbak Hilde , Aarvak Tanja , Vemuri Mohan C.
Published: May 2016

The development of novel targeted therapies with acceptable safety profiles is critical to successful cancer outcomes with better survival rates. Immunotherapy offers promising opportunities with the potential to induce sustained remissions in patients with refractory disease. Recent dramatic clinical responses in trials with gene modified T cells expressing chimeric antigen receptors (CARs) in B-cell malignancies have generated great enthusiasm. This therapy might pave the way for a potential paradigm shift in the way we treat refractory or relapsed cancers. CARs are genetically engineered receptors that combine the specific binding domains from a tumor targeting antibody with T cell signaling domains to allow specifically targeted antibody redirected T cell activation. Despite current successes in hematological cancers, we are only in the beginning of exploring the powerful potential of CAR redirected T cells in the control and elimination of resistant, metastatic, or recurrent nonhematological cancers. This review discusses the application of the CAR T cell therapy, its challenges, and strategies for successful clinical and commercial translation.