bluuebunny/crossref_metadata_2025 huggingface dataset:
Long term outcomes of inversion ankle injuries
Authors: Anandacoomarasamy A , Barnsley L
Published: February 2005

Background:Ankle sprains are common sporting injuries generally believed to be benign and self limiting. However, some studies report a significant proportion of patients with ankle sprains having persistent symptoms for months or even years.

Aims:To determine the proportion of patients presenting to an Australian sports medicine clinic who had long term symptoms after a sports related inversion ankle sprain.

Methods:Consecutive patients referred to the NSW Institute of Sports Medicine from August 1999 to August 2002 with inversion ankle sprain were included. Exclusion criteria were fracture, ankle surgery, or concurrent lower limb problems. A control group, matched for age and sex, was recruited from patients attending the clinic for upper limb injuries in the same time period. Current ankle symptoms, ankle related disability, and current health status were ascertained through a structured telephone interview.

Results:Nineteen patients and matched controls were recruited and interviewed. The mean age in the ankle group was 20 (range 13–28). Twelve patients (63%) were male. Average follow up was 29 months. Only five (26%) ankle injured patients had recovered fully, with no pain, swelling, giving way, or weakness at follow up. None of the control group reported these symptoms (p<0.0001). Assessments of quality of life using short form-36 questionnaires (SF36) revealed a difference in the general health subscale between the two groups, favouring the control arm (p<0.05). There were no significant differences in the other SF36 subscales between the two groups.

Conclusion:Most patients who sustained an inversion ankle injury at sport and who were subsequently referred to a sports medicine clinic had persistent symptoms for at least two years after their injury. This reinforces the importance of prevention and early effective treatment.
Does prolonged cycling of moderate intensity affect immune cell function?
Authors: Scharhag J , Meyer T , Gabriel H H W , Schlick B , Faude O , Kindermann W
Published: February 2005

Background:Prolonged exercise may induce temporary immunosuppression with a presumed increased susceptibility for infection. However, there are only few data on immune cell function after prolonged cycling at moderate intensities typical for road cycling training sessions.

Methods:The present study examined the influence on immune cell function of 4 h of cycling at a constant intensity of 70% of the individual anaerobic threshold. Interleukin-6 (IL-6) and C-reactive protein (CRP), leukocyte and lymphocyte populations, activities of natural killer (NK), neutrophils, and monocytes were examined before and after exercise, and also on a control day without exercise.

Results:Cycling for 4 h induced a moderate acute phase response with increases in IL-6 from 1.0 (SD 0.5) before to 9.6 (5.6) pg/ml 1 h after exercise and CRP from 0.5 (SD 0.4) before to 1.8 (1.3) mg/l 1 day after exercise. Although absolute numbers of circulating NK cells, monocytes, and neutrophils increased during exercise, on a per cell basis NK cell activity, neutrophil and monocyte phagocytosis, and monocyte oxidative burst did not significantly change after exercise. However, a minor effect over time for neutrophil oxidative burst was noted, tending to decrease after exercise.

Conclusions:Prolonged cycling at moderate intensities does not seem to seriously alter the function of cells of the first line of defence. Therefore, the influence of a single typical road cycling training session on the immune system is only moderate and appears to be safe from an immunological point of view.
Quantification of the weakness and fatigue in thoracic outlet syndrome with isokinetic measurements
Authors: Özçakar L , İnanıcı F , Kaymak B , Abalı G , Çetin A , Hasçelik Z
Published: February 2005

Objectives:Patients with thoracic outlet syndrome (TOS) complain of many subjective symptoms that are difficult to measure and quantify. In this study we have tried to assess the weakness (muscle strength) and fatigue (endurance) of these patients with an objective measurement method, isokinetic muscle testing.

Methods:Twenty three TOS patients and 15 age matched healthy controls were enrolled in the study. Detailed histories of the patients were taken and the patients underwent complete physical examinations. Cervical radiographies, Doppler ultrasonography, electromyography, and isokinetic measurements were carried out. The isokinetic measurements were carried using the Biodex System 3 dynamometer during concentric shoulder flexions and extensions at velocities of 60°/s, 180°/s, and 240°/s.

Results:Although the muscle strengths of both groups seemed to be similar, the fatigue ratios of TOS patients at 60°/s and 180°/s were found to be higher compared with those of healthy controls (p = 0.029, p = 0.007).

Conclusions:TOS patients were found to have muscular performance similar to controls, but their upper extremities developed fatigue more easily than those of healthy individuals.
Insect mitochondrial genomics: the complete mitochondrial genome sequence of the meadow spittlebugPhilaenus spumarius(Hemiptera: Auchenorrhyncha: Cercopoidae)
Authors: Stewart James Bruce , Beckenbach Andrew T
Published: February 2005

We present the complete mitochondrial genome sequence of the meadow spittlebug Philaenus spumarius (Auchenorrhyncha: Cercopoidae). This contribution represents the second mitochondrial genome from the Hemiptera and the second of the three hemipteran suborders sampled. The genome is a circular molecule of 16 324 bp with a total A+T content of 77.0% and 76.7% for coding regions only. The gene content, order, and structure are consistent with the Drosophila yakuba genome structure (Clary and Wolstenholme 1985) and the hypothesized ancestral arthropod genome arrangement (Crease 1999). Nucleotide composition and codon usage are near the means observed in other insect mitochondria sequenced to date but have a higher A+T richness compared with the other hemipteran example, the kissing bug Triatoma dimidiata (Dotson and Beard. 2001. Insect Mol. Biol. 10: 205–215). The major noncoding region (the A+T rich region or putative control region) between the small ribosomal subunit and the tRNAIlegene includes two extensive repeat regions. The first repeat region includes 19 tandem repeats of a 46-bp sequence, whereas the second contains a longer sequence (146 bp) tandemly repeated four times.Key words: mitochondrial genomics, phylogeny, molecular evolution, sequence variation, spittlebug.
FISH-aimed karyotyping and characterization of Renner complexes in permanent heterozygoteRhoeo spathacea
Authors: Golczyk Hieronim , Hasterok Robert , Joachimiak Andrzej J
Published: February 2005

Fluorescence in situ hybridization (FISH) using 25S rDNA, 5S rDNA, and telomere sequences as probes was carried out in the complex permanent heterozygote Rhoeo spathacea. Telomere sites were exclusively terminal. All 10 25S rDNA loci were located distally and appeared transcriptionally active after silver staining. Six distal and 2 interstitial 5S rDNA sites were detected; 2 of the distal sites strictly colocalized with 25S rDNA loci. The 2 intercalary 5S rDNA loci occurred in short arms of 2 chromosomes that conjoined at meiosis. Chromosomes differed as to the amount of AT-rich centric heterochromatin, suggesting involvement of pericentromeric regions in translocations. The possibility of Robertsonian-like rearrangements was discussed. Double target FISH with ribosomal probes along with DAPI fluorescence gave the basis for full chromosome identification in mitosis. The 2 Renner complexes are structurally balanced, both having 5 25S and 4 5S rDNA sites. Centromere clustering, telomere association, a high number of NOR sites, and a strong tendency for formation of joint nucleoli contribute to the preservation of highly polarized Rabl arrangement at interphase. These findings were discussed in relation to meiotic catenation in Rhoeo.Key words: chromosomes, complex heterozygotes, FISH, heterochromatin, interphase, meiotic multivalents, nucleolus, NOR, rDNA, Rhoeo, Renner complexes, translocations.
Mapping of genes expressed inFusarium graminearum-infected heads of wheat cultivar 'Frontana'
Authors: Han F P , Fedak G , Ouellet T , Dan H , Somers D J
Published: February 2005

The isolation, physical, and genetic mapping of a group of wheat genes expressed in infected heads of Triticum aestivum 'Frontana' resistant to Fusarium head blight is reported. A cDNA library was built from heads of 'Frontana' through suppressive subtractive hybridization, to enrich for sequences induced by the pathogen Fusarium graminearum during infection. A group of 1794 clones was screened by dot blot hybridization for differential gene expression following infection. Twenty of these clones showed a strong difference in intensity of hybridization between infected and mock-inoculated wheat head samples, suggesting that they corresponded to genes induced during infection. The 20 clones were sequenced and used for mapping analysis. We determined a precise chromosomal location for 14 selected clones by using series of chromosome deletion stocks. It was shown that the 14 clones detected 90 fragments with the use of the restriction enzyme EcoRI; 52 bands were assigned to chromosome bins, whereas 38 fragments could not be assigned. The selected clones were also screened for polymorphisms on a 'Wuhan' × 'Maringa' wheat doubled haploid mapping population. One clone, Ta01_02b03, was related to a quantitative trait locus for type II resistance located on chromosome 2AL, as determined with simple sequence repeat markers on another mapping population, but did not map in the same location on our population. Another clone, Ta01_06f04, was identified by BLAST (basic local alignment search tool) search in public databases to code for a novel β-1,3-glucanase, homologous to a major pathogenesis-related protein. This clone mapped to chromosomal regions on chromosome 3, including 3BL and 3DL, where B glucanase gene clusters are known to exist. Seven other clones, including 1 coding for an ethylene-response element binding protein and 3 for ribosomal proteins, and 4 clones corresponding to proteins with unknown function, were also mapped.Key words: deletion stock, Fusarium head blight, physical mapping, expressed sequence tags, glucanase.
Longitudinal Active Damping System for UVSOR Storage Ring
Authors: Kasuga Toshio , Hasumoto Masami , Kinoshita Toshio , Yonehara Hiroto
Published: February 2005

A longitudinal active damping system was installed in the UVSOR electron storage ring in order to suppress a coupled-bunch instability due to higher-order-mode resonances of the RF cavity. The system consists of sixteen independent feedback loops; each of them corrects the energy deviation of one of sixteen bunches, individually. The phase oscillation due to the instability was satisfactorily damped with this system.
Initial Phases of Negative Point-to-Plane Breakdown in N2 and N2+10%CH4: Verification of Morrow's Theory
Authors: Černak Mirko , Hosokawa Tatsuzo
Published: February 2005

Measurements have been made of initial phases of breakdown in a short negative point-to-plane gap in nitrogen and in a N2+10%CH4 mixture at pressures of 25∼100 Torr in order to verify Morrow's theory of stepped pulses in negative corona discharges. This theory explains the step observed on the current growth (Trichel pulse) wavefront in terms of independent photon and ion secondary processes at the cathode. The comparison of current growth waveforms in N2 and in a N2+10%CH4 mixture, where photoemission is suppressed, shows good qualitative agreement with Morrow's theory.
Depolarizing Resonance Correction in Polarized Proton Beam Acceleration up to 5.0 GeV at the KEK PS
Authors: Sato Hikaru
Published: February 2005

The research and development of polarized proton acceleration is being carried out at the KEK 12 GeV proton synchrotron. This paper describes the phenomena encountered in accelerating a polarized proton beam up to 5.0 GeV. Besides conventional methods for correcting depolarizing resonance, an adiabatic resonance crossing with pulsed quadruple magnets has been successfully applied to correct strong intrinsic resonances. At present, 90% of the linac polarization has been preserved in the booster synchrotron with reduced accelerating rf voltage to avoid the depolarization by synchrotron oscillation. In the main ring, 90% and 50% of the booster beam polarization was preserved at 3.5 GeV and 5.0 GeV, respectively. The KEK PS is the first cascaded synchrotron which has demonstrated a polarized proton beam.
Observation of Ion-Trapping in Single Bunch Operation at the Photon Factory Storage Ring
Authors: Sakanaka Shyogo , Izawa Masaaki , Kobayakawa Hisashi , Kobayashi Masanori
Published: February 2005

Ion trapping in a single bunch operation was experimentally studied at the Photon Factory storage ring at KEK. Ions were trapped even in the single bunch beam at a stored current of 38 mA. This is contrary to the standard ion-trapping theory, which predicts that the motion of ions is unstable in the electron beam orbit under the present experimental condition. In this experiment, bremsstrahlung produced by collisions between the electron beam and trapped ions was observed. Shifts in the betatron tunes also suggested the presence of ions.
NMR Study of Chain Orientation in Drawn Poly (Vinylidene Fluoride) Films. I. The Effects of Poling on the Double Orientation Distribution Function
Authors: Ishii Fumiaki , Sawatari Takanori , Odajima Akira
Published: February 2005

The double orientation distribution function (DODF) of the chains in the drawn film of PVDF was determined by the NMR second-moment dependence on the angle φ between the magnetic field H
0 and the normal to the film surface. The Fourier coefficient a
2 of DODF determined for the unpoled sample changed from -0.24 to 0.28 on poling, but a
4=0.08 did not change. These values were obtained from the highly oriented noncrystalline and crystalline parts in the drawn film. By using the Fourier coefficients a
2m

c (m=1, 2) of the DODF of the b-axis for the crystalline part in the poled sample obtained by the X-ray diffraction method, the Fourier coefficients a
2m

or (m=1, 2) of the DODF in the highly oriented non-crystalline part were estimated to be a
2
or=0.3 and a
4
or=0.24 at 18degC. The invariant of a
4 was explained in terms of the DODF of the noncrystalline chains which are aligned preferentially upon poling with the chain dipoles oriented normally to the film surface. This paper discusses the molecular motion in the highly oriented noncrystalline part due to the temperature dependence of these coefficients.
A Monte Carlo Simulation of the Evacuation Process in the Molecular Flow Regime
Authors: Kimata Morihiko , Iiyori Hideo , Kawahara Minoru , Villaflor Antonio B.
Published: February 2005

The evacuation process in an ultrahigh vacuum chamber is elucidated by Monte Carlo calculation. Using chambers of different geometries, molecules were injected into the vacuum for a finite period of time and the resulting change in the number of molecules remaining in the chamber was analyzed. It was postulated that the molecules are reflected at the inner walls of the chamber in accordance with the cosine and specular reflection laws. The results show that the effective pumping speed depends on the shape of the chamber, but the ultimate pressure has little dependence on it.
Measurements of the Surface Resistivity of a 99.99% Al/6063 Beam Pipe
Authors: Suetsugu Yusuke , Ishimaru Hajime
Published: February 2005

The surface resistivity of a 99.99% Al/6063 beam pipe, which is proposed for vacuum chambers of the SSC (Superconducting Super Collider), was measured in the microwave frequency region at extremely low temperatures, near 10 K. The surface resistivity was found to be larger than that expected from the static resistivity, by a factor of 7, due to anomalous skin effects. Great attention should be paid in considering the beam impedance of the chamber at high frequencies.
Preparation of Y–Ba–Cu–O Films by dc Sputtering
Authors: Saito Yukinori , Sakabe Kazuhiko , Ishihara Kazuhito , Manaka Koichi , Suganomata Shinji
Published: February 2005

Y–Ba–Cu–O films were prepared by dc diode sputtering. Films were not deposited on the substrates directly facing the target. Ba activated by electron bombardment seems to be responsible for this phenomenon. Application of a strong transverse magnetic field between the target and the substrate holder was effective to prepare films with uniform thickness.
In-Situ Measurement of Sputtering Yield of Graphite by VUV Laser Fluorescence Spectroscopy
Authors: Kajiwara Toshinori , Matsuda Yoshinobu , Muraoka Katsunori , Okada Tatsuo , Maeda Mitsuo , Akazaki Masanori
Published: February 2005

The sputtering yield of graphite was measured for the first time by laser fluorescence spectroscopy using a tunable VUV source, where the optical system was absolutely calibrated by the Rayleigh scattering. It was shown that the technique was useful for quantitative studies of sputtering processes.
Examination of Surface-Roughness of Silicon Crystals by Double-Crystal X-Ray Topography
Authors: Niwano Michio , Kobayashi Tadashi , Miyamoto Nobuo
Published: February 2005

A new method of examining surface-roughness of silicon crystals, which uses the refraction effect in double-crystal X-ray topography, is proposed. It was shown that local slopes with an angle of inclination to a few tenths of a degree are detectable with this method.
Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD
Authors: Watanabe Takeshi , Azuma Kazufumi , Tanaka Masahiro , Nakatani Mitsuo , Sonobe Tadashi , Shimada Toshikazu
Published: February 2005

The influence of the deposition conditions on properties of a-SiGe:H prepared by the microwave-excited plasma CVD was examined. Highly photoconductive a-SiGe:H alloys were obtained at the pressures lower than 0.8 mTorr when the substrate was heated to 200degC. The photoconductive property of a-SiGe:H deteriorated when the microwave power was decreased. Similar deterioration was observed when the deposition pressure was increased. It was suggested that the deterioration of the photoconductive property was caused by the depression of SiH4 decomposition. The photoconductivity of a-SiGe:H alloys increased with the decrease of the deposition pressure even though the amount of the isolated SiH2 bonds in the film also increased with the decrease of the deposition pressure. The deposition mechanism inducing this deposition pressure dependence was discussed.
Growth of Aluminum Whiskers below the Melting Point of Aluminum
Authors: Hazama Katsuki , Nakamura Yoshio , Nittono Osamu
Published: February 2005

Pure aluminum whiskers have been grown from aluminum-indium alloy films deposited at -70degC when heated at about 140degC. Most whiskers were observed to grow from their roots along the <110> direction, and they had ball-like substances containing a large amount of indium at their tips. It seems that indium metal promotes aluminum whisker growth but not through the VLS mechanism. No axial dislocation was observed, but single and/or multiple twins were occasionally observed.
Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source
Authors: Fujita Shizuo , Uemoto Yasuhiro , Araki Soichiro , Imaizumi Masayuki , Takeda Yoshikazu , Sasaki Akio
Published: February 2005

GaAs layers are grown by organometallic vapor-phase epitaxy (OMVPE) from trimethylgallium (TMGa) and triethylarsenic (TEAs) source gases under various growth conditions. Mirror-like surfaces are obtained at growth temperatures 560∼780degC and at [TEAs]/[TMGa] ratios 1.3∼7.3. Samples grown at temperatures higher than 670degC exhibit n-type conductivity, while those lower than 600degC exhibit p-type. For n-type samples, the highest Hall mobilities obtained so far are 5270cm2/Vs and 12200cm2/Vs at 300 K and 77 K, respectively, with the electron concentration of 7.5×1015cm-3. Similar to the conventional GaAs layers grown by various techniques, scattering by ionized impurities and space charges caused by some impurities transported with TEAs seems to degrade electrical properties.
A Measurement of Induced Charge in CnTCNQ Langmuir-Blodgett Films Sandwiched between Aluminum Electrodes
Authors: Iwamoto Mitsumasa , Nakano Kazuhito
Published: February 2005

Electrical properties of C
n
TCNQ Langmuir-Blodgett films sandwiched between aluminum electrodes are studied using thermally stimulated electrical measurements, and both the effect of film structure and the influence of native aluminum oxide are stressed. A change in induced charges on an electrode (Δq
2) is measured while heating a sample. The relation between Δq
2 and the number of deposited layers is in good agreement with a simple model based on a double-layered dielectric system. The direction of polarization in a film as deposited is also investigated using a photo-induced current measurement.
Energy-Dependent Neutron Sensitivity of Polycarbonate Recoil Track Detector
Authors: Narita Masakuni , Fujita Fumiyuki , Oguchi Kazunari , Sawamura Teruko , Kudo Katsuhisa
Published: February 2005

The energy-dependent absolute neutron sensitivity of a polycarbonate recoil track detector was measured for 4-6.5 MeV. The detector was irradiated with neutrons from a D(d,n)He reaction with the ETL Van de Graaff accelerator. After irradiation and chemical etching, the number of etched tracks was counted with an automatic track-counting system. The theoretical energy-dependent sensitivity was calculated using the local energy-loss theory of Katz and Kobeitch and agreed well with the observed results.
Improvement of Spatial Resolution of Monochromatic X-ray CT Using Synchrotron Radiation
Authors: Sakamoto Kozo , Suzuki Yoshio , Hirano Tatsumi , Usami Katsuhisa
Published: February 2005

X-ray computed tomography using synchrotron radiation (SR) as X-ray source potentially provides CT images of improved quality, since SR produces tunable, monochromatized and collimated X-ray beams of high flux density. We can obtain CT images of small samples rapidly with better spatial resolution and contrast; we can also obtain the spatial distribution of a specific element using the absorption edge. In this paper, a method for improving the spatial resolution of such a system is presented, involving the magnification of projection images using asymmetric diffraction. First, the modulation transfer function (MTF) of projection images of an X-ray test chart is measured in order to evaluate the spatial resolution. Next, using this method, we show CT images of several industrial materials with spatial resolution of 15∼30 µm and demonstrate the usefulness of SR-CT with a high spatial resolution.
Overlay Accuracy Evaluation in Step-and-Repeat X-Ray Lithography
Authors: Deguchi Kimiyoshi , Komatsu Kazuhiko , Horiuchi Toshiyuki , Hirata Kazuo
Published: February 2005

Overlay accuracy in step-and-repeat X-ray lithography is evaluated through MOS device fabrication using an X-ray stepper applied to four lithography levels. Though relatively good overlay accuracies of 0.15 µm (σ) between two levels are obtained, these values are not satisfactory for sub-half-micrometer ULSI fabrication. To improve overlay accuracy, error factors are investigated. It is found that overlay errors are strongly affected by mask pattern placement errors. The standard deviation of mask errors is as high as 0.1 µm. These errors are introduced by e-beam writing errors and pattern displacement caused by stress relief of absorber and membrane layers in the etching process. The influence of these error factors on pattern placement accuracy is discussed.
Spectrum Identification of Heliotron E Plasma Impurities by a Time-Resolving Grazing Incidence Spectrometer with a Multichannel Detector
Authors: Kondo Katsumi , Oda Toshiatsu , Okada Hiroyuki , Zushi Hideki , Kaneko Hiroshi , Mizuuchi Tohru , Takeiri Yoshihiko , Noda Nobuaki , Akaishi Kenya , Mutoh Takashi , Sano Fumimichi , Sudo Shigeru , Sato Motoyasu , Morimoto Shigeyuki , Motojima Osamu , Iiyoshi Atsuo , Uo Koji
Published: February 2005

A flat field vacuum ultraviolet spectrometer with a multichannel detector has been constructed to identify impurity spectral lines over the wavelength from 100 Å to 400 Å in Heliotron E plasmas. The resonance emissions of iron, titanium, chromium and nickel ions were identified in heated plasma by ion cyclotron range of frequency (ICRF) pulse. The lines were enhanced as ICRF power increased. The possible sources of these impurities are discussed briefly.
Extrinsic Thermally Stimulated Currents in FEP Films with Ion-Plated Aluminum Electrodes
Authors: Ikezaki Kazuo , Kato Makio
Published: February 2005

Thermally stimulated currents and “scanning temperature conduction currents” are studied in FEP thin films with ion plated aluminum electrodes (Al*). In these films, a rapid increase in the positive charge flow I
p from the interfacial region between Al* and FEP into the bulk of FEP is observed at elevated temperatures. This rapid increase in I
p begins at lower temperatures as the accelerating voltage V
a for the ion plating increases. In negatively corona-charged FEP films with Al*, three TSC peaks appear depending on V
a. The highest-temperature peak of the three is the extrinsic one originating from neutralization of the trapped charges by I
p. The annealed samples show only the extrinsic TSC because of the low thermal stability of the trap sites which are responsible for the intrinsic TSCs.
Improvement in Radiographic Image Quality by Reduction in Scattered X-Rays: A New Concept in Improving Image Quality
Authors: Ohtsuka Akiyoshi , Kariya Komyo
Published: February 2005

A new concept which has been successful in improving the radiographic image quality using high-speed screen-film (SF) systems is presented. It is shown theoretically and experimentally that the image contrast and sharpness in low frequency can be improved by the reduction in scattered X-rays without increasing the patient exposure. Two radiographic imaging systems with the same sensitivity: High-speed S-F systems combined with high-ratio antiscatter grids (the Low-Scatter Systems) and medium-speed S-F systems combined with low-ratio antiscatter grids (the High-Scatter Systems); were used in this study. The radiographic contrast of the Low-Scatter Systems can be increased by a factor of 1.3-1.6 and the response can also be increased in low frequency below 1 cycle/nm compared to the High-Scatter Systems. This new method has the advantage of having no use for special devices like the moving slit assembly.
Determination of the Structure Factors of GaAs by the Pendellösung Beat Measurement Using White Radiation
Authors: Kobayashi Kazuyoshi , Takama Toshihiko , Sato Shin'ichi
Published: February 2005

The Pendellösung intensity beats of white radiation diffracted from GaAs single crystals were measured by the energy-dispersive diffraction technique using a solid-state detector. The structure factors, F

h
k
l
, for 14 low-order reflections with h+k+l=4n and 4n±1 were determined by measuring the extremum positions of the beats and utilizing the dynamical diffraction theory. The obtained F

h
k
l
values were in fairly good agreement with those measured by Matsushita and Hayashi (Phys. Status Solidi (a) 41 (1977) 139) using the reflection profile method with CuKα1 radiation, when we take into account the wavelength dependence of anomalous dispersion correction terms. The deviations in the obtained values of F
111 and F
311 from the calculated ones using the atomic scattering factors for free atoms suggest that there exists a bonding charge between the nearest neighbor atoms of Ga and As.
Growth Behavior of Silicon Oxide on Wire Anode of Positive Corona Discharge
Authors: Nashimoto Keiichi
Published: February 2005

The growth behavior of the silicon oxide needles and films grown on a wire anode was observed after positive corona discharges in air containing dimethylpolysiloxane vapor at atmospheric pressure. At the primary stage of growth, a thin film and projections grew on the wire anode, and the projections were not uniformly distributed. With an increase of discharging time, the islands made of these projections tended to cover the whole surface of the wire anode uniformly, and the projections grew to needles, whereas the thickness of the thin film was almost the same at each discharging time. By examining discharge characteristics, it was also found that the growing silicon oxide was not insulative in a discharging state and a voltage increase to gain a constant discharge current with the growth of silicon oxide resulted from an increase of apparent wire anode radius.
Relationship between Plasma Parameters and Carbon Atom Coordination in a-C:H Films Prepared by RF Glow Discharge Decomposition
Authors: Yamamoto Kenji , Ichikawa Yosuke , Nakayama Takehisa , Tawada Yoshihisa
Published: February 2005

Amorphous C:H films were prepared by rf glow discharge decomposition from CH4using a permanent magnet system to apply a static magnetic field perpendicular to the rf electric field. The structure and properties of a-C:H films have been investigated systematically with respect to the hydrogen content, hardness and coordination of carbon atoms as a function of rf power (self-bias voltage). The coordination of carbon atoms has been determined by solid-state13C magic angle spinning nuclear magnetic resonance measurements. It is found that the fraction of graphitic (sp2) versus tetrahedral (sp3) bonding increases with increasing rf power (negative self-bias voltage). Film hardness is understood in terms of the balance between the incorporated hydrogen and the fraction of graphitic (sp2) versus tetrahedral (sp3) bonding. The production of ionic and neutral species from a glow discharge has also been monitored by mass spectroscopy and optical emission spectroscopy to investigate the relation between plasma parameters and carbon atom coordination. Using these measurements and negative self-bias measurements, it is shown that the coordination of carbon atoms is determined not only by the energy of impinging ions on the substrate but also by the type of active species. In addition, the neutral and ionic C2H2related species are thought to be some of the species which increase the fraction of graphitic (sp2) versus tetrahedral (sp3) bonding.
Spectral Response of Photoconductivity in CuAl1-xGaxS2
Authors: Susaki Masami , Yamamoto Nobuyuki
Published: February 2005

The excitation spectra of photoconductivity are studied at room temperature on p-type CuAl1-x
Ga
x
S2 crystals. The effect of polarized light excitation reveals that the structure in the intrinsic range is attributable to band-to-band transitions, corresponding to the direct transitions from two valence subbands split off by a crystal field. In the extrinsic range, two major photo excitations are found to be due to a free to shallow donor transition and a deep donor transition. Photocarrier generation via the shallow donor states assisted by thermal activation plays an important role in these samples.
Fiber-Optic Pulse Delay Using Composite Zone Plates for Very Fast Optoelectronics
Authors: Okada Yoshiko , Kodate Kashiko , Kamiyama Hiroyuki , Kamiya Takeshi
Published: February 2005

Optical pulse delay technique is important in such fields as time-resolved spectroscopy, optical sampling and very high speed time division multiplexing of digital data. This paper reports a proposal to assemble an optical pulse delay unit with a reduced number of components by using a composite zone plate and its successful implementation with a dynamic range of 300 ps delay of 40 ps diode laser pulses.
Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope
Authors: Shimizu Hirofumi , Honma Noriaki , Munakata Chusuke , Ota Masaya
Published: February 2005

A scanning photon microscope based on ac surface photovoltage imaging was applied for nondestructive observations of surface scratches and surface contaminations by SO4
2- in 125 mm diameter n-type silicon wafers. The scratches and contaminations create bulky and interface traps, resulting in lower ac surface photovoltages. The ac surface photovoltages attained between 35 through 150 µV have a relationship with the concentration of SO4
2- analyzed by ion chromatography ranging between 102 and 2×104 ng/wafer, implying that the present method is useful and simple for evaluation of the contaminated level of wafer surfaces in a nondestructive and noncontact manner.
Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy
Authors: Humphreys T. P. , Das K. , Posthill J. B. , Tarn J. C. L. , Jaing B. L. , Wortman J. J. , Parikh N. R.
Published: February 2005

High-quality GaAs epitaxial layers have been grown by molecular beam epitaxy on nominally (100) oriented silicon substrates that were previously annealed in a hydrogen ambient at 1250°C. The growth procedure involves an in situ thermal annealing step after the initial deposition of a thin GaAs buffer layer. Rutherford backscattering and channeling of 2.1 MeV He+ ions, interference optical microscopy, transmission electron microscopy, and X-ray diffraction techniques have been used to characterize these layers. Comparative studies indicate that the epitaxial layers grown on hydrogen-ambient annealed substrates have a superior surface morphology and a lower interface disorder than those on the chemically cleaned nominal silicon (100) substrates. Furthermore, a significant reduction in the density of microtwins is observed in layers grown on the preannealed substrates. This improvement in crystalline quality may be attributed to a lower degree of disorder at the silicon surface that was achieved by high temperature hydrogen-ambient annealing. However, dislocation densities were comparable and the presence of antiphase domain boundaries were observed in both cases.
Impurity Ions in a Plasma Produced by Electron Cyclotron Resonance Heating
Authors: Yonesu Akira , Komori Akio , Kawai Yoshinobu
Published: February 2005

The mechanism of the generation of impurity ions is experimentally evidenced in an electron cyclotron resonance (ECR) plasma produced with a copper Lisitano coil. It is shown that neutral copper particles are sputtered from the Lisitano coil by argon ions and are ionized by the collisions with electrons. The argon ions are accelerated by the ion sheath formed on the Lisitano-coil surface, so that the plasma space potential plays an important role in producing the impurities. The impurity flux calculated by using plasma parameters and the sputtering yield of copper is found to be consistent with the observed value. The production of a pure ECR plasma is also attempted with an aluminum Lisitano coil which has a smaller sputtering yield than that of the copper Lisitano coil.
Spectroscopic Evaluation on Photosensitive Langmuir Films Using Multichannel Spectrophotometer
Authors: Ogawa Kazufumi , Tamura Hideharu , Hatada Motoyoshi , Ishihara Takeshi
Published: February 2005

The UV and visible (VB) transmission spectra of monolayers of some materials having long hydrocarbon chains on a water surface (Langmuir (L) film) were obtained by the real time direct measurement using a multichannel spectrophotometer during surface pressure-area isotherm measurements. It was found that the change of surface pressure as a function of area (Π-A curve) does not always agree with that of optical absorption as a function of area, and therefore the Π-A curve does not always reflect the molecular arrangement of molecules in the L film. The rates of photochemical reaction of the L films can be studied in relation to the molecular arrangement of the monolayers using this method. The spectra of the L film which were obtained by a reflection method using polarized light were further proven to be valid in studying the molecular arrangement in the L film.
Collection Efficiency Calculation in the Weak Electric Field Limit of Scanning Electron Microscopes (SEM) and Its Application to SEM Image Generation
Authors: Kato Makoto
Published: February 2005

Collection efficiencies of secondary electrons in SEM are analyzed theoretically in the weak electric field limit. Collection efficiency is determined by the amount of secondary electrons which can reach the electron detectors. The effects of the screening of local topographies around the incident points are analyzed in order to calculate this collection efficiency. We constructed a weak electric field limit model based on simple assumptions including (1) straight motion of emitted electrons near the sample surface, (2) complete absorption of once-blocked electrons, (3) full detection of emitted electrons departed from the near neighbor of the sample surface. In some special cases, collection efficiencies are calculated analytically. We generated a few SEM images combining them with a model of the secondary electron yield.
Epitaxial Lateral Overgrowth (ELO) of Silicon on the Whole Surface
Authors: Miyai Yukio , Namura Takashi , Oishi Hiroshi , Inoue Morio
Published: February 2005

In order to obtain a SOI layer over the whole surface, techniques using two ELO processes are presented. In the first ELO process, the silicon epitaxial layer grows vertically through openings between the <100> SiO2 stripes and laterally across SiO2 stripes. In the second ELO process, the silicon epitaxial layer grows laterally over the new SiO2 layer linking the SiO2 stripes at the bottom of the trench etched in the silicon epitaxial layer, between the SiO2 stripes.
The Adsorption Process of Hydrogen on Titanium Films, a CPD and QCM Study
Authors: Konishi Ryōsuke , Kobayashi Yasuhiko , Sasakura Hiroshi
Published: February 2005

We combined a contact potential difference (CPD) method and a quartz crystal microbalance (QCM) method to estimate quantiatively the sorption process of hydrogen atoms in titanium films. At the adsorption of less than about 1.2×1017 atoms/cm2, the exsistence of both r-type and s-type adsorption states was confirmed. At further adsorption, the changes of CPD and QCM suggest the formation of a stable hydride and the existence of s-type adsorption stable on hydride.
Diffusion Coefficient of Iron in Silicon at Room Temperature
Authors: Nakashima Hiroshi , Isobe Takashi , Yamamoto Yuhide , Hashimoto Kimio
Published: February 2005

The pairing reaction of interstitial iron and substitutional boron for samples diffused with iron into boron-doped p-type silicon was studied by measuring the concentration of interstitial iron by DLTS as a function of the storage time at the temperatures of 0, 27, 42, 57 and 72°C. The diffusion coefficient of interstitial iron in silicon was determined at the temperature range between 0 and 72°C. The diffusion coefficient was represented by the expression D
Fe=3.3×10-1 exp(-0.81/k
T)cm2s-1.
Enhancement of VUV Generation in Resonant Four-Wave Mixing in Kr Diluted with Xe
Authors: Okada Tatsuo , Aoi Tatsufumi , Maeda Mitsuo , Muraoka Katsunori , Akazaki Masanori
Published: February 2005

Tunable vacuum ultraviolet radiation was generated by two-photon resonant four-wave difference frequency mixing in Kr. Improvement in conversion efficiency was obtained by a diluted gas mixture with Xe whose dispersion was negative.
Waveform of Linear Ion-Acoustic Waves Excited by a Mesh Grid
Authors: Noda Shunichi , Nakamura Yoshiharu , Kawai Yoshinobu , Akazaki Masanori
Published: February 2005

Single pulsed ion-acoustic waves are excited by a mesh grid, the measured waveform of which agrees with the theoretical one.
Measurement of Instability Initiation Current in Vacuum Ar
Authors: Suzuki Setuo , Okutomi Tsutomu , Morimiya Osami
Published: February 2005

The arc current for initiating the appearance of noise on a current trace, the instability initiation current I
0, and the arc voltage V
0 corresponding to I
0, have been measured using Cu-Ni alloy and Ag-Pd alloy electrode metals. The average values of I
0 and V
0 were plotted as a function of the thermal conductivity λ, showing a decrease with decreasing λ under a constant vapor pressure P
h.
Measurements of Temporal Changes of TN LC Molecular Alignments on Double Block Pulse Method
Authors: Yamashita Masafumi
Published: February 2005

The temporal changes of nematic liquid crystal (LC) molecular alignments were studied by measuring the interference intensities of the conoscopic figures obtained by the double block pulse method. Since the intensities continued increasing for a few milliseconds after the pulses were turned off, the lagging change of LC molecular alignments was semi-quantitatively clarified by numerical calculation derived from an alternating current circuit equivalent to the Voigt model in the viscoelastic theory, considering the force of inertia. The floating capacity, viscoelastic resistance and disorder of the alignments depends on the changes. The threshold energy to begin showing the tilted alignments was measured by changing a number of the first block pulse.
Step Structure of Dislocation Boundaries in White Tin Single Crystals. Part I. Observations
Authors: Honda Katuhiko
Published: February 2005

The dislocation structure of boundaries, introduced to crystals by stretching and then annealing, was observed. The boundaries were revealed on the (001) surface by an etch hillock technique. They lay nearly in the [010] direction and the dislocation arrangement in them resembled a set of stairs consisting of a series of treads and steps. Observations led us to the conclusion that the dislocations in the treads belong to the slip system <100>{010} and those in the steps to the (1/2) <111>{11̄0}.
Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films
Authors: Hirao Takashi , Kitagawa Masatoshi , Kamada Takeshi , Tsukamoto Kazuyoshi , Yoshioka Yoshiaki , Kuramasu Keizaburo , Korechika Tetsuhiro , Wasa Kiyotaka
Published: February 2005

The compositional properties of silicon nitride (SiN) and silicon oxynitride (SiON) films prepared by electron cyclotron resonance plasma CVD (ECR P-CVD) and conventional plasma CVD (P-CVD) methods have been investigated and compared. SiH4-N2 gas was used for SiN depositions in both methods. O2 gas and N2O gas were added to SiH4-N2 gas for SiON film formations in ECR and P-CVD depositions, respectively. SiN films with the N/Si ratio in excess of a stoichiometric value and predominantly with N-H bonds are more easily obtained by the ECR P-CVD method than by the P-CVD method. Hydrogen concentrations were found to be nearly the same in the SiN films deposited by both methods in the microwave powers and rf power of 150-500 W. The addition of O2 and N2O gases to the SiH4-N2 resulted in an increase in the deposition rates of SiON films of about 1.5 times that of SiN films. A slight addition of O2 and N2O gases resulted in a decrease in the absorption due to Si-H bonds and an increase in the absorption due to N-H bonds. Additions of more than a certain amount of O2 or N2O gases resulted in the disappearance of Si-H and N-H bonds. However, hydrogen atoms were found to be still contained in SiON films, although the concentration is a little low in comparison with those in SiN films. The excited states of oxygen are considered to have great influence on such film compositions.
Neutron Powder Diffraction from Polymorphs of BaPb0.75Bi0.25O3
Authors: Asano Hajime , Oda Migaku , Endoh Yasuo , Hidaka Yoshikazu , Izumi Fujio , Ishigaki Tōru , Karahashi Kazuhiro , Murakami Toshiaki , Watanabe Noboru
Published: February 2005

Crystal structures of three polymorphs of the superconducting oxide BaPb0.75Bi0.25O3 have been determined by high-resolution neutron powder diffraction. The compound has been confirmed to form both tetragonal (I4/mcm) and orthorhombic (Ibmm) structures at room temperature. The latter transforms to the monoclinic phase (P21/m) at low temperatures. The structural difference of the three polymorphs has been described by the rotation as well as the distortion of oxygen octahedra surrounding the Pb0.75Bi0.25 cations.
Evaluation of Microwave Conductivity in Superconductor YBa2Cu3O7-x Using a Cavity Perturbation Technique
Authors: Kato Keizo , Takahashi Kuniharu , Mitera Hisamitsu , Minami Kazuo
Published: February 2005

The microwave properties of a YBa2Cu3O7-x
bulk sample are investigated using a cavity perturbation technique. The sample is placed in the field of a microwave TM011 mode cylindrical cavity operated at about 2.86 GHz, and the unloaded quality factor Q
U is measured in the temperature range above 80 K. It is found that a sharp reduction of the Joule loss in the sample begins at an onset temperature of about 90 K. The formula for the microwave conductivity is also derived theoretically and the conductivity of the sample is evaluated from the results of Q
U measurements of the cavity with and without the sample.
Possibility of High Tc Superconducting Thin Films in Magnetic Application
Authors: Hatta Shin-ichiro , Hirochi Kumiko , Adachi Hideaki , Kamada Takeshi , Ichikawa Yo , Setsune Kentaro , Wasa Kiyotaka
Published: February 2005

Magnetic properties of BiSrCaCuO and other superconducting oxide films in a technical field region were surveyed from a viewpoint of magnetic application. Permeability, hysteresis loops, magnetic anisotropy and high frequency response were measured in the superconducting region with discussion. These results seem to be well explained by the Bean model in which a number of magnetic fluxoids thread the superconductor. These films will be helpful as soft magnetic materials in a very high frequency region.
AC Inductive Measurement of Intergrain and Intragrain Currents in High-Tc Oxide Superconductors
Authors: Ni Baorong , Munakata Toshiyuki , Matsushita Teruo , Iwakuma Masataka , Funaki Kazuo , Takeo Masakatsu , Yamafuji Kaoru
Published: February 2005

Bulk intergrain current and closed intragrain current in sintered Y-Ba-Cu-O superconductors were measured at 77 K by using an ac inductive method. These currents can be separated because of the large difference in penetrating rates of the magnetic flux into specimens with respect to the ac field amplitude. The obtained intergrain current density agreed approximately with critical current density measured resistively. The closed intragrain current density amounted to 4.3×108 A/m2 at B=0.5 T and decreased gradually with increasing magnetic field. The present results show that the ac inductive measurement is one of the available nondestructive methods to characterize sintered oxide specimens.
Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs
Authors: Zhu Qinsheng , Hiramatsu Kazumasa , Sawaki Nobuhiko , Akasaki Isamu
Published: February 2005

The electrical properties near the heterointerface of In
x
Ga1-x
As
y
P1-y
(y<0.01) grown on (100) GaAs by liquid phase epitaxy are investigated as a function of the lattice mismatch (Δa/a)⊥. It is shown that the electron mobility is limited by the space-charge scattering which is increased with increasing (Δa/a)⊥. The space-charge scattering due to the lattice-mismatch becomes significant near the heterointerface (≃0.1 µm). The in-depth profile shows that the electron mobility is decreased and the electron concentration is increased near the heterointerface (≃0.1 µm). This is attributed to the high segregation coefficient of impurities at the initial growth step as well as the misfit dislocation.
Magnetic Properties of Fe/Dy Artificial Superstructured Films
Authors: Yoden Kenichi , Hosoito Nobuyoshi , Kawaguchi Kenji , Mibu Ko , Shinjo Teruya
Published: February 2005

Artificial superstructured films composed of two magnetic constituents, Fe and Dy, were prepared by means of alternate deposition in ultrahigh vacuum, and magnetic properties have been studied from Mössbauer spectroscopy and SQUID magnetization measurements. When Fe layers are thinner than 20 Å, the structure is amorphous and the magnetic transition temperature is about 270 K, which agrees with that of amorphous pure Fe. When Fe layers are thicker (e.g. 30 Å) and Dy layers are thinner than 20 Å, a perpendicular magnetic anisotropy becomes significant and the spin direction of Fe changes with temperature.