bluuebunny/crossref_metadata_2025 huggingface dataset:
HOLOGRAPHIC IMAGE SYNTHESIS UTILIZING THEORETICAL METHODS
Authors: Waters James P.
Published: March 2005

A theoretically calculated, automatically plotted, and photoreduced hologram has been successfully used to ``reconstruct'' the image of a nonexistent, three-dimensional, equilateral tetrahedron. The theory, as presented therein, provides a synthetic hologram which consists only of completely opaque and transparent portions; allows reconstruction of the entire image with any fraction of the hologram as in conventional experimental types; can be made to reconstruct objects for either on- or off-axis viewing; provides both a real and virtual image; and produces a positive image with both positive and negative prints.
A NEW MODE IN AXIALLY MAGNETIZED YIG RODS
Authors: Lewis M. F. , Lacklison D. E.
Published: March 2005

A new microwave delay mode in an axially magnetized YIG rod has been observed and is tentatively interpreted to be a spin wave generated at the turning point and reflected at the crossover point.
A FLUID MIXING LASER
Authors: Cool Terrill A.
Published: March 2005

Helium-neon CW laser oscillations at 1.1523 μ have been observed in a high-velocity gas flow system utilizing the rapid mixing of metastable helium atoms with initially unexcited neon.
HIGH POWER AND EFFICIENCY IN CdS ELECTRON BEAM PUMPED LASERS
Authors: Hurwitz C. E.
Published: March 2005

Electron beam excitation of CdS crystals grown in an atmosphere of excess Cd has resulted in laser emission near 4900 Å with 350 W of peak output power and 26.5% overall (35% internal) power efficiency at temperatures as high as 110°K. Laser action was observed, although at considerably reduced levels of power and efficiency, at temperatures up to 250°K. The high performance of the lasers appears to be due to increased crystal uniformity and to the introduction or enhancement of highly efficient radiative transitions, both of which result from the Cd-rich growth conditions.
VISUALIZATION OF THE CROSS SECTION OF A SOUND BEAM BY BRAGG DIFFRACTION OF LIGHT
Authors: Korpel A.
Published: March 2005

This Letter reports on a novel way of imaging, in amplitude and phase, the cross section of a sound beam. Because of the phase retention, any arbitrary cross section can be brought into focus by optical manipulation without changing the relative position of light beam and sound beam. The process is explained in terms of ray optics and various pertinent features are illustrated. Following a discussion about resolution, the experimental setup is described. Results show photographs of a 22-MHz sound field behind various objects placed in the sound beam. In conclusion, the application to sound microscopy at higher sound frequencies is pointed out.
NOISE SUPPRESSION IN A DOUBLE-INJECTION SILICON DIODE
Authors: Nicolet M-A. , Bilger H. R. , McCarter E. R.
Published: March 2005

We measured the noise spectrum between 10 kHz and 10 MHz. In the region where I ∝ V2, we found a noise suppression factor of 1/2 for the white noise, i.e., I2 = (1/2)4kT(∂V/∂I)−1Δf.
HIGH EFFICIENCY POLARIZATION REVERSAL OF MAGNETOELASTIC WAVES IN YIG BY OPTICAL-CONTACT BONDING OF YAG DISKS
Authors: van de Vaart H. , Smith Henry I.
Published: March 2005

By optical-contact bonding of YAG disks to the end surfaces of a YIG rod, magnetoelastic pulses, generated at one end, are detected at the opposite end because of polarization reversal of the circularly polarized shear waves to the magnetically inactive, counter-rotating shear waves. The frequencies at which the sense of circular polarization is reversed are determined by the velocities of the shear waves in the (110) cut YAG and by the thickness of the disks. The efficiency of the YAG-YIG-YAG assembly for obtaining echoes in transmission depends strongly on the quality of the YAG-to-YIG bonds. It was found that the optical-contact bonds transmitted 96% of the incident elastic power at L band at room temperature.
ELECTROLUMINESCENCE USING GaAs MIS STRUCTURES
Authors: Berglund C. N.
Published: March 2005

Minority carrier ``injection'' using metal-insulator-semiconductor (MIS) structures driven by ac excitation has been achieved for both n- and p-type GaAs, and the resulting luminescence has been measured. The technique provides a new method for obtaining electroluminescence in semiconductors where pn junctions are either difficult or impossible to fabricate.
ACOUSTIC ATTENUATION OF A SINGLE-DOMAIN LITHIUM NIOBATE CRYSTAL AT MICROWAVE FREQUENCIES
Authors: Wen C. P. , Mayo R. F.
Published: March 2005

The pulse echo technique is employed to measure the acoustic wave attenuation along the c axis of a single-domain lithium niobate crystal at room temperature up to c band frequencies. Initial experiments show that the frequency dependence of the attenuation is nearly quadratic as predicted by theory. Approximately 13 dB of loss per μsec of time delay is observed at 5.5 GHz. The relatively low-loss characteristics, coupled with the self-transduction properties, make lithium niobate a leading candidate for microwave room-temperature delay line applications.
HIGH-RESISTIVITY p-TYPE CADMIUM SULFIDE
Authors: Chernow Fred , Courtens Eric , Douma Mark , Goodman Larry
Published: March 2005

p-Type conductivity and stored electron charge densities as large as 1.3 × 10−7 coul/cm2 have been observed in high-resistivity CdS crystals. These properties were studied by photovoltaic, photopolarization, and thermo-electric power measurements.
THE MAGNETOSTRICTION OF SILICON-DOPED YTTRIUM IRON GARNET (YIG)
Authors: Dillon J. F. , Gyorgy E. M. , Remeika J. P.
Published: March 2005

The magnetostriction constants λ100 and λ111 have been measured at room temperature for YIG single crystals in which a small fraction of the iron ions are replaced by silicon. The magnetically active impurity is believed to be divalent iron which compensates the Si4+. As the silicon concentration reaches about 0.05 Si atoms/Y3Fe5O12, both λ's pass through zero. In crystals of this composition the magnetization is largely decoupled from the strain distribution in the crystal. A peak in low-frequency permeability and simple easily interpreted domain structures correspond to this λ = 0 composition.
THE USE OF VACUUM-EVAPORATED GOLD FILMS TO INVESTIGATE THE OXIDATION MECHANISM OF METALS
Authors: Foster J. P. , Reynik R. J.
Published: March 2005

Vacuum-evaporated gold films were used as inert markers to study the oxidation mechanism of cobalt at 850°C. Gold-marked and unmarked specimens were simultaneously oxidized for 138 hr. With the exception of the gold marker appearing as a dispersed row of spheriods within the CoO layer closest to the metal-oxide interface, and the random distribution of voids in the specimens, the microstructures of the gold-marked and unmarked specimens were identical, and are in agreement with microstructures reported in the literature.
BRILLOUIN SCATTERING SPECTRA OF CRYSTALLINE QUARTZ, FUSED QUARTZ AND GLASS
Authors: Shapiro Stephen M. , Gammon Robert W. , Cummins Herman Z.
Published: March 2005

The Brillouin scattering spectra of crystalline quartz, fused quartz and Pyrex glass have been observed. The crystalline quartz spectrum contains three doublets corresponding to one longitudinal and two transverse acoustic modes, whereas the spectra of used quartz and Pyrex glass have one longitudinal and one transverse component each, as is expected for isotropic solids. From the lack of observable broadening of any of the Brillouin components, it is concluded that the room temperature attenuation coefficient α of both longitudinal and transverse phonons at 10 to 20 Gc is less than 103 cm−1.
FARADAY UNIPOLAR INDUCTION IN A NONIDEAL TYPE II SUPERCONDUCTOR
Authors: LeBlanc M. A. R. , Fletcher E. L.
Published: March 2005

A Faraday unipolar inductor using a solid cylinder of a nonideal type II superconductor (unannealed Nb) constitutes a zero internal impedance generator capable of supplying appreciable electrical power and permits continuous study of the behavior of the average internal magnetic field vs the applied field. The various contributions to the observed emf are discussed in terms of the relativistic interpretation of Faraday unipolar induction.
SUBNANOSECOND PAIR-TUNNELING TO SINGLE-PARTICLE TUNNELING TRANSITIONS IN JOSEPHSON JUNCTIONS
Authors: Matisoo J.
Published: March 2005

This Letter reports the measurement of an upper bound of 0.8 nsec for the time of transition of Sn–SnOx–Sn Josephson junctions from the pair tunneling (V = 0) to the single-particle tunneling state (V = 2Δ: 1mV at 1.7°K). The threshold is extremely sharp. There is no observed delay in the transition after the threshold is exceeded, and there is no change in the observed risetime of the signal with changes in driving current amplitude or risetime. The magnetic field behavior of these junctions is the same as that observed in the dc case. The combination of high speed, sharp threshold, and strong magnetic field dependence are desirable properties for logic elements.
COMPETITION, HYSTERESIS AND REACTIVE Q-SWITCHING IN CO2 LASERS AT 10.6 MICRONS
Authors: Bridges T. J.
Published: March 2005

High repetition rate (30–60 kc/sec) Q-switching in a CO2 laser at 10.6μ is reported. A moving mirror technique using steady mirror velocities between 16 and 30 cm/sec produces one pulse of the strongest line (P(20)) per half wavelength of travel. The usable pulsing rate is determined by, and is a measure of, the lower laser level lifetime (∼30 μsec). In a 1-W CW laser, peak powers ≈ 30 W with pulse lengths ≈ 1 μsec and average power ≈ CW power were obtained. This and related competition and hysteresis effects result from strong coupling between the lines of the vibrational-rotational spectrum due to thermalizing molecular collisions.
STIMULATED EMISSION FROM POLYMETHINE DYES
Authors: Spaeth M. L. , Bortfeld D. P.
Published: March 2005

Stimulated emission is reported for two polymethine dyes dissolved in glycerol when pumped by a Q-switched ruby laser. The materials are 1, 1'-diethyl-2,2'-dicarbocyanine iodide, and 1, 1'-diethyl-4, 4'-carbocyanine iodide. The emission wavelength is variable over the range 750 nm to 790 nm, depending on cell length. Oscillation has been observed on both the 0–0 and 0–1 vibrational transitions.
A PROPOSED METHOD OF SHIFTING THE FREQUENCY OF LIGHT WAVES
Authors: Yeh C.
Published: March 2005

A simple method of shifting the frequency of light waves with precision, based on the Doppler principle, is proposed. The proposed system consists of two reflecting mirrors. One mirror is assumed to be moving with a velocity ν while the other mirror is assumed to be stationary. Practical limitations such as mirror loss, beam spread, etc., are discussed. A numerical example is also given.
DIRECT OBSERVATION OF THE EXCESS LIGHT HOLE POPULATION IN OPTICALLY PUMPED p-TYPE GERMANIUM
Authors: Feldman J. M. , Hergenrother K. M.
Published: March 2005

We report the direct observation of conductivity modulation by heavy-to-light hole transitions in p-type germanium. The resistance of a p-type germanium bar was modulated by microsecond pulses of 10-μ radiation from a Q-switched CO2 laser. An estimate of the fast carrier lifetime is 10−12 sec. Direct observation of 20-Mc ringing on the laser pulse is reported. The band-to-band type of transition permits room temperature operation.
DOPPLER CONVERSION AND ADIABATIC TIME DOMAIN CONVERSION OF ACOUSTIC AND SPIN WAVES
Authors: Auld B. A. , Tsai C. S.
Published: March 2005

Two new processes for magnetoelastic or transverse to longitudinal acoustic conversion in a ferromagnet are described. Transmission of a small signal through a travelling step-function magnetic field produces a wave with Doppler-shifted frequency and a wave number which is approximately unchanged. By suitably adjusting the input and output conditions, various kinds of magnetoelastic and acoustic-acoustic conversion can be achieved. Conversion of this kind also occurs when the incoming wave is subjected to a magnetic field which varies slowly in time but is uniform in space (adiabatic conversion).
INVESTIGATION OF SPECTRAL BLEACHING IN PASSIVE Q-SWITCH DYES
Authors: Giuliano C. R. , Hess L. D.
Published: March 2005

The bleaching characteristics of saturable dyes have been studied by varying the spectral width of a Q-switched ruby laser. Recent reports of mode selection properties of dyes used as passive Q switches and of absorption spectra of dyes while in the bleached state have been interpreted in terms of narrow spectral saturation (``hole-burning''). This view implies that certain dyes have inhomogeneously broadened absorption bands consisting of relatively narrow components. Our results indicate that the lower limit to the width of these components for cryptocyanine is ∼1 cm−1.
THE EFFECT OF ABSORBER CONCENTRATION ON A PULSED LASER SYSTEM
Authors: She C. Y. , Tan Ang-Tiek
Published: March 2005

The threshold energy and the time of yielding the first laser pulse as a function of absorber concentration are experimentally determined. In cooperation with the coupled rate equations of the system, the effect of absorber concentration on the performance of a pulsed laser system is studied. The experimental data are processed in such a way to allow a direct determination of pumping dynamics through the parameters nt and tp, and to measure the relative absorption cross section of cryptocyanine and ruby by observing the laser output only.
SOME EFFECTS OF Zn DIFFUSION ON Mn-DOPED GaAs
Authors: Peart R. F. , Weiser K. , Woodall J. , Fern R.
Published: March 2005

Radiotracer techniques have been used to show that Zn diffusion into an originally uniformly Mn-doped GaAs wafer produces marked changes in the Mn concentration profile, resulting in a large minimum behind and a small minimum ahead of the Zn diffusion front. A model which assumes that Mn is an amphoteric impurity in GaAs is proposed to explain these changes.
DEEP (1–10 μ) PENETRATION OF ION-IMPLANTED DONORS IN SILICON
Authors: Bower R. W. , Baron R. , Mayer J. W. , Marsh O. J.
Published: March 2005

Deep penetration of donors has been observed as a result of 20-kV Sb ion implantations into 〈110〉- and 〈111〉-oriented, high-resistivity silicon. The density profiles were measured by a capacitance-voltage method. The deep penetrating tail was found to be independent of such experimental parameters as temperature of implant (for T ≥ 300°C), orientation, annealing, and surface condition; and to empirically follow a N ∝ (x + B)2.2 dependence over four orders of magnitude (B ≈ 0.15 μ). This component has not been observed previously in silicon and has a different dependence on implantation parameters and a different functional form than that observed in ion channeling.
WHITE-LIGHT RECONSTRUCTION OF COLOR IMAGES FROM BLACK-AND-WHITE VOLUME HOLOGRAMS RECORDED ON SHEET FILM
Authors: Stroke George W. , Zech Richard G.
Published: March 2005

The method of ``white-light reflection holography'' first described by Stroke and Labeyrie (Physics Letters 20, 368, March 1, 1966) and subsequently verified by a number of authors, has now been extended to the recording of volume holograms in 6–7-μ-thick Kodak 649F emulsions on sheet film, with a quality in the reconstructed images comparing favorably with the images reconstructed from the 17-μ-thick emulsions on glass plates used heretofore. The results presented have also permitted us to further verify a simple ``crystallographic'' theory of the method, first used by Stroke and Labeyrie (ibid.) and further described by G. W. Stroke in a subsequent paper.
GROWTH OF DISLOCATION-FREE SILICON WEB CRYSTALS
Authors: Tucker T. N. , Schwuttke G. H.
Published: March 2005

Dislocation-free silicon web crystals have been grown reproducibly in the thickness range of 15 to 45 μ and approximately 4 to 8 mm wide. Phosphorus, arsenic, and boron were used as dopants to achieve controlled resistivities from 0.05 to 20 Ω-cm.
EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K
Authors: Rupprecht H. , Woodall J. M. , Konnerth K. , Pettit D. G.
Published: March 2005

The light-emitting diodes described in this Letter differ from standard type diodes insofar as the amphoteric dopant Si is the dominant impurity on both sides of the junction. The p-n junction is completely solution regrown. The highly compensated p region gives rise to a wide active region up to 50 μ in width. The interesting feature of these diodes is their high external quantum efficiencies at 300°K. Values up to 6% have been measured on diodes, when an antireflecting coat has been applied.
SELF-DIFFUSION IN LIQUID METALS
Authors: Reynik R. J.
Published: March 2005

The small fluctuation theory of self-diffusion in liquid metals proposed by Swalin has been modified to allow a thermally activated diffusion process and local density fluctuations. The resulting diffusion equation predicts a linear variation of diffusivity with temperature. This is confirmed by existing data in liquid In, Sn, Cu, Na, Zn, Ga, K, Hg and Ag.
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
Authors: Crowell C. R. , Sze S. M.
Published: March 2005

Expressions for the temperature dependence of the carrier mean free path for optical phonon scattering and the mean energy loss per collision are presented which predict avalanche multiplication as a function of electric field for any operating temperature once the appropriate parameters have been determined at a single temperature. This has been verified for electrons in Si by the correlation of measurements at 300°K, 213°K, and 100°K. The temperature dependence of the breakdown voltages of a variety of abrupt and linear-graded Si and Ge p-n junctions has also been predicted. The fractional change in breakdown voltage with increasing temperature is predicted to decrease with increased doping concentration and, for the same breakdown voltage, to be less for linear-graded junctions than for abrupt junctions.
HIGH-TEMPERATURE X-RAY TOPOGRAPHY OF Si WAFERS STRAINED BY THIN SURFACE FILMS
Authors: Blech Ilan A. , Meieran Eugene S.
Published: March 2005

Room-temperature and elevated-temperature transmission x-ray topographs of Si wafers coated with different types of films were taken to show the change in the stress in the films as a function of temperature. Anodic oxide films grown at 100°C show a reversal of the sense of stress at 200°C, while steam oxide, grown at 1200°C, show almost no change in topographs taken up to 800°C. In the case of metal films, the stress in Pt films vanishes at 230°C and remains absent at least up to 615°C, while little change is seen in W films, even in topographs taken at 800°C.
THE HALL EFFECT IN SINGLE CRYSTALS OF TITANIUM
Authors: Scovil Georgiana W.
Published: March 2005

The Hall coefficient in single crystals of titanium has been measured at room temperature as a function of their crystallographic orientation in a magnetic field. Six rectangular plates were cut from crystals of 99.97% or higher purity. The direction of the c axis was determined by x-ray techniques, and the coefficient was measured using both a 3-probe and a 2-probe dc method. The principal components of the Hall tensor were determined to be R∥ = +7.1 × 10−11 and R⊥ = −10.8 × 10−11 m3/C. The components R∥ and R⊥ are the Hall coefficients when the c axis of the hexagonal crystal is parallel and perpendicular respectively to the applied magnetic field.
MAGNETIC STUDIES OF THE SEMICONDUCTOR TO METAL TRANSITIONS IN Ti3O5 AND Ti2O3
Authors: Keys L. K. , Mulay L. N.
Published: March 2005

Magnetic susceptibility studies show a semiconductor to metal transition in Ti3O5 and Ti2O3. The transition in Ti2O3 is a noncooperative transition as previously observed. An apparent second noncooperative effect is observed at 800°K. The transition in Ti3O5 occurs at around 460°K. It is a distinct cooperative transition and is associated with a phase change. The metallic conduction is believed to occur along the b direction. Some aspects of the theories of Goodenough and Mott are applied to the transitions.
TRAVELING-WAVE AMPLIFICATION BY DRIFTING CARRIERS IN SEMICONDUCTORS
Authors: Sumi Masao
Published: March 2005

A novel method for traveling-wave amplification by the interaction of drifting carriers in semiconductors with an external slow-wave circuit is described. The coupling between a plate semiconductor and a plane circuit with periodic structure is analyzed and the resulting dispersion relation is solved. The propagating wave is amplified when the drift velocity of carriers exceeds the phase velocity of the wave. The wave characteristics are quite similar to those for ultrasonic amplification. For n-InSb at 77°K, the predicted gain for 4 Gc/sec is over 100 dB/mm.
MECHANISMS OF ENERGY TRANSFER INVOLVING TRIVALENT Tb AND Eu
Authors: Van Uitert L. G. , Dearborn E. F. , Marcos H. M.
Published: March 2005

Excitation can move from Tb to Eu at 4.2°K by processes involving exchange even though the electronic transitions concerned are not matched in energy. At 295°K, thermal effects cause an overlap permitting dipole-dipole transfer to occur. Transfer to Eu may be enhanced by excitation migration from more remote Tb ions to those closer to Eu at 295°K. This migration is not effective at 4.2°K, and hence appears to require thermal activation.
PTM SINGLE-PULSE SELECTION FROM A MODE-LOCKED Nd3+-GLASS LASER USING A BLEACHABLE DYE
Authors: Penney A. W. , Heynau H. A.
Published: March 2005

The selection of a single mode-locked pulse from a Q-switched Nd+3-doped glass laser is described. Mode-locking is achieved by self-mode-locking the laser using a bleachable dye Q switch. Selection of a single pulse is achieved by means of a modification of the pulse transmission mode described by Vuylsteke.
ANOMALOUS WORK FUNCTION OF THE TUNGSTEN (110) PLANE
Authors: Young Russel D. , Clark Howard E.
Published: March 2005

Work function measurements have been carried out on the densely packed (110) plane of tungsten. Field-ion microscope techniques have been used to obtain atomically perfect single-crystal (110) planes. Field-electron emission energy distributions have been combined with Fowler-Nordheim measurements to give work function values at 77°K. The electrostatic patch fields which exist at the measured surface result in corrections which tend to increase the work function value. The measurements reported here are not corrected for patch fields and range in value from 7.1 eV to 8.7 eV for the (110) plane. Future measurements will employ a newly developed technique involving a family of energy distribution plots which eliminates the correction for patch fields.
VOLUME EXCITATION OF AN ULTRATHIN SINGLE-MODE CdSe LASER
Authors: Stillman G. E. , Sirkis M. D. , Rossi J. A. , Johnson M. R. , Holonyak N.
Published: March 2005

Ultrathin CdSe lasers of variable mode spacing, including the special case of single-mode output, are described. A simple experimental procedure for volume optical excitation of a thin semiconductor sample is described.
RADIATION-INDUCED PEAK EFFECT IN SUPERCONDUCTING NbZr
Authors: Keller E. L. , Coffey H. T. , Patterson A. , Autler S. H.
Published: March 2005

A peak in the critical current vs magnetic field characteristic of Nb−25% Zr has been produced during a low-temperature (∼30°K), 15-MeV deuteron irradiation (1017 deuterons/cm2). The peak occurs at fields near the upper critical field, Hc2; essentially no changes were observed at lower fields. Annealing at 77°K produced almost no change in the peak whereas it nearly disappeared after annealing at 300°K. It is concluded that this peak is a bulk effect associated with radiation-induced defects of intermediate size and complexity which are effective pinning centers near Hc2, but are too ``weak'' to affect the critical current at lower fields. A number of possible mechanisms are briefly discussed.
SPIN-WAVE SPECTRUM OF GADOLINIUM IRON GARNET
Authors: Comstock R. L. , Raymond J. J. , Nilsen W. G. , Remeika J. P.
Published: March 2005

The parallel-pumped spin-elastic wave instability and ferromagnetic resonance were used to measure the dispersion and losses of π/2 spin waves in high-purity, single-crystal GdIG at low temperatures. The spin wave dispersion constant varies more rapidly with temperature than predicted by molecular field theory and the resonance losses are only a factor of three greater than those for YIG.
EFFECT OF MAGNETIZATION ON THE L2 ORDERING REACTION IN IRON-ALUMINUM ALLOYS
Authors: Swann P. R. , Fisher R. M.
Published: March 2005

It is found that the spontaneous magnetization of disordered iron-aluminum alloys changes the mode of the L20 order-disorder reaction from a second to a first degree transition. A new two-phase field (αm + α2n) has been found in the composition range 22.3 at. % Al to 25 at. % Al and this is responsible for many of the magnetic anomalies of these alloys. The microstructure of alloys heat-treated in the (αm + α2n)-phase region can be controlled by an externally applied magnetic field which can also be used to determine quantitatively the ``antiphase'' boundary energy of the L20 structure.
SELF-LOCKING OF MODES IN THE ARGON ION LASER
Authors: Gaddy O. L. , Schaefer E. M.
Published: March 2005

Direct observation of indications of self-mode-locking in the argon ion laser is reported. With losses introduced into the optical resonator, subnanosecond pulsation of the laser output is observed with a wide-band photomultiplier.
ON THE DYNAMICS OF LASER-INDUCED DAMAGE IN GLASSES
Authors: Budin J. P. , Raffy J.
Published: March 2005

The evolution in time of laser-induced fractures in bulk transparent materials such as glass is studied. Damage starts with a long, thin filament, collinear with the laser beam direction, almost simultaneously over its whole length. Damage then grows transversally to this direction, after the end of the incident laser pulse, and is accompanied by sparking. These observations favor damage mechanisms with short time constants, such as ionization or self-trapping.
NO MOLECULAR LASER
Authors: Deutsch Thomas F.
Published: March 2005

Laser action on over sixty vibrational-rotational transitions in the ground electronic state of nitric oxide is obtained by the dissociation of NOCl in a pulsed electrical discharge. The emission occurs between 5.84 and 6.43 μ. The observed frequencies are fitted using the revised vibrational constants ωe = 1904.01 cm−1 and ωeχe = 13.995 cm−1.
BULK GaAs NEGATIVE CONDUCTANCE AMPLIFIERS
Authors: McWhorter A. L. , Foyt A. G.
Published: March 2005

By taking the negative mobility slope of a three-slope piecewise-linear model for velocity vs electric field in n-GaAs as an adjustable parameter, good quantitative agreement has been obtained with the measured small-signal admittance parameters of GaAs negative conductance amplifiers. The calculation yields a negative mobility of about 2500–3000 cm2/V-sec.
COPYING HOLOGRAMS
Authors: Landry M. J.
Published: March 2005

A method is described by which particularly good copies of holograms can be made. The reconstructed images formed by copies made when a He–Ne laser is used as the illuminating light for the copying process are excellent in detail and are less degraded than when other conventional illuminating light source is used.
CONTINUOUSLY-VARIABLE ULTRASONIC-OPTICAL DELAY LINE
Authors: Brienza M. J. , DeMaria A. J.
Published: March 2005

Experimental results are reported on a continuously-variable delay line using acoustic waves to diffract and frequency-shift a portion of an argon ion laser beam. Data was obtained from 300 to 700 MHz utilizing thin-film CdS transducers deposited on a single-crystal Z-cut quartz rod placed within the laser cavity. The diffracted, frequency-shifted beam was optically heterodyned on a PIN detector. Variable delays of the order of 10 μsec were obtained by varying the distance from the CdS transducer to the beams' intercept point. A novel folded-acoustic path configuration is also described.
ON THE ROLE OF SODIUM AND HYDROGEN IN THE Si–SiO2 SYSTEM
Authors: Kooi E. , Whelan M. V.
Published: March 2005

MOS-capacitance measurements combined with neutron activation analysis show that positive charge at oxidized silicon surfaces can be increased by the presence of sodium in the oxidation system. The amount of charge depends then on the surface orientation and the oxide thickness. It can be decreased by low-temperature heat treatment in water vapor or hydrogen. The same treatment can cause an effective reduction of the number of interface states. In both cases an explanation can be found in the formation of Si–H bonds.
INTERPRETATION OF LOW-VOLTAGE PHOTOMEASUREMENTS IN METAL-INSULATOR-METAL FILMS
Authors: Schuermeyer Fritz L. , Crawford Julian A.
Published: March 2005

A simple method of separating the opposing photocurrent components which occur in thin-film, metal-insulator-metal sandwich structures at low (or zero) applied bias voltages is presented. The method uses data obtained by illuminating the sample first from one side and then from the other, both electrodes being semitransparent, and calculating the ratio of the resulting photo-yields over a suitable photon energy range. The analysis has been applied to evaporated Al-Al3O3-Al diodes in which the Al2O3 layer was formed by evaporation of sapphire. The experimental results show that the proposed analysis is adequate for its intended purpose.
PARAMETRIC AMPLIFICATION AND OSCILLATIONS IN STRUCTURED SUPERCONDUCTING TIN FILMS
Authors: D'Aiello R. V. , Freedman S. J.
Published: March 2005

Parametric amplification and side-band oscillations have been observed using thin superconducting films at 7.2 GHz. The amplification and oscillations are associated with discontinuities in the pump power vs frequency response of the films and with slits cut into the films. When operated in a parametric mode, a net gain of 12 dB was achieved. The oscillations occur in symmetrical pairs about the pump at 1-MHz intervals and are very sensitive to an applied dc magnetic field of approximately 0.1 G.
SOUND HOLOGRAMS AND OPTICAL RECONSTRUCTION
Authors: Mueller R. K. , Sheridon N. K.
Published: March 2005

A hologram has been made of an object illuminated by ultrasound, using the deformation of the water surface by radiation pressure. An optical reconstruction of this sound hologram with laser light has been achieved.
THE FAR INFRARED OPTICAL PROPERTIES OF LiNbO3
Authors: Bosomworth D. R.
Published: March 2005

The absorption coefficients and indices of refraction of LiNbO3 at 300°K have been measured with polarized radiation in the 100- to 1000-μ wavelength region. The ordinary ray absorption coefficient is approximately twice that for extraordinary ray radiation. Both absorption coefficients decrease significantly on cooling from 300°K to 80°K. LiNbO3 shows a large far infrared birefringence and appreciable dispersion.
PARAMETRIC AMPLIFICATION IN THE FAR INFRARED
Authors: Patel C. K. N.
Published: March 2005

We report the observation of parametric amplification of far infrared radiation in a crystal of tellurium which was pumped at 10.6 μ by a CO2 laser. A gain of 3 dB was measured at 17.888-μ wavelength which was obtained from a far IR neon laser. Comparison between calculated and measured values of gain show reasonable agreement.
EXPANSION RATES OF THE LUMINOUS FRONT OF A LASER-PRODUCED PLASMA
Authors: Weichel Hugo , Avizonis P. V.
Published: March 2005

The expansion velocity of the luminous front of a plasma plume created by a giant pulse laser has been measured both as a function of time during the laser pulse and as a function of position in front of the pyrolitic graphite target. The initial velocity of the vapor appears to agree with the sublimation temperature of pyrolitic graphite. The subsequent vapor absorption of laser radiation produced peak final expansion velocities of 7 × 106 cm/sec. The luminous front was found to accelerate from 4.8 × 105 to 7.0 × 106 cm/sec within a 0.3-cm distance for a laser energy density of 700 J/cm2.
FOCUSED-IMAGE HOLOGRAPHY WITH EXTENDED SOURCES
Authors: Rosen Lowell
Published: March 2005

Focused-image holograms have been made with good results using an extended coherent source as a reference wavefront in the recording process and a different extended source in the reconstruction process. The technique is uncritical and requires no source compensation.
THE CW PUMPING OF YAG:Nd3+ BY WATER-COOLED KRYPTON ARCS
Authors: Read T. B.
Published: March 2005

Calculations, based on the crystal absorption and the lamp emission spectra, and also experimental crystal pumping tests have shown that a water-cooled krypton arc is approximately twice as efficient as a xenon arc or a tungsten-iodine filament lamp for the CW pumping of YAG:Nd3+ at room temperature.
EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS
Authors: Arnold Emil , Abowitz Gerald
Published: March 2005

DC channel conductance of a number of experimental MOS transistor structures was measured and results used to calculate the surface state density and field-effect mobility. The mobility was found to increase with decreasing surface state concentration and to approach bulk mobility in samples with the lowest number of surface states. This behavior is shown to be consistent with Coulomb scattering by electrons trapped in surface states.
OBSERVATION OF THE CRITICAL MAGNETIC FIELD BY LIGHT INTENSITY FROM A POSITIVE COLUMN
Authors: Sato Masumi
Published: March 2005

The light intensity of a positive column in a longitudinal magnetic field changes with the field and becomes minimum at the critical field when a helical oscillation appears in the positive column. As this change is very steep at the critical point, even when the longitudinal electric field does not clearly show the point, an observation of the light intensity of the positive column may be useful in detecting the critical field value.
DEPOSITION AND DIFFUSION OF DEUTERONS IN GOLD, NICKEL, AND COPPER
Authors: Heintze V. , Kamke D.
Published: March 2005

The energy spectrum of the D(d, p)T protons shows that with gold foils a surface and an inner part of imbedded deuterons exist, whereas solid gold gives only an inner part, solid copper and nickel only surface parts.
CRYSTAL SYMMETRY, OPTICAL PROPERTIES, AND FERROELECTRIC POLARIZATION OF Bi4Ti3O12 SINGLE CRYSTALS
Authors: Cummins S. E. , Cross L. E.
Published: March 2005

Optical and electrical measurements on thin sections of Bi4Ti3O12 in orientations not previously measured have yielded the following results. The symmetry is monoclinic, point group m. The spontaneous polarization Ps is greater than 30 μC/cm2 and lies in a direction tilted slightly from the major crystal surface. Switching, with fields perpendicular to the major crystal surface, occurs by a small ``rocking'' of this large Ps vector. The large component parallel to the major crystal surface can also be switched with high fields. Thus, there are four possible spontaneous polarization directions in the virgin crystal giving rise to complex domain structures.
DETECTION OF LIGHT NUCLEI WITH CELLULOSE NITRATE
Authors: Jones W. D. , Neidigh R. V.
Published: March 2005

We have shown experimentally that light nuclei, including protons having energies as low as 55 keV, can produce etchable damage in cellulose nitrate. Comparison of our experimental results with theory indicates that the threshold for track registration is about 0.35 MeV per mg-cm−2.
3-D IMAGERY AND HOLOGRAMS OF OBJECTS ILLUMINATED IN WHITE LIGHT
Authors: Pole R. V.
Published: March 2005

Described is a method of obtaining holograms of 3-D objects illuminated in white light. First, a 3-D scene, illuminated in white light, is photographed through a fly's eye lens. If this photograph is projected through the same lens it yields a real 3-D image of the object directly. However, by using coherent light for projection, this real image can be used to make a hologram, which in turn yields both a real and a virtual image of the object.
TRAVELING WAVE EXCITATION OF HIGH POWER GAS LASERS
Authors: Shipman John D.
Published: March 2005

Experiments are described in which nitrogen and neon lasers are excited by a wave of current excitation which effectively travels from one end of the laser to the other with its velocity matching that of the stimulated emission. This type of excitation is accomplished with a low-impedance flat-plate Blumlein pulse generator. The power output in the direction of the wave of excitation is at least ten times that in the other direction. A 2.5-MW pulse of about 4-nsec duration is obtained with nitrogen and a 190-kW pulse of about 1.5 nsec with neon.
EFFECT OF ILLUMINATION TIME ON THERMALLY STIMULATED CURRENTS IN SEMI-INSULATING GaAs
Authors: Haisty R. W.
Published: March 2005

Complex changes in the distribution of thermally stimulated current peaks with illumination time and intensity are reported for a sample of semi-insulating GaAs. With weak illumination for 5 sec, at least six peaks were seen, while after a 1-min illumination only four peaks were evident. With stronger illumination, the thermally stimulated current essentially consisted of two major peaks, at about 115°K and 278°K. The 115° peak first increased with illumination time, passed through a maximum, and was quite small after a 12-hr illumination, while the 278° peak became very large.
WAVE INTERACTIONS IN SATURABLE ABSORBERS
Authors: Schwarz S. E. , Tan T. Y.
Published: March 2005

The interaction between waves in an idealized saturable absorber is discussed. It is shown that the presence of a strong wave will cause the line to appear to be ``hole-burned'' when probed by a second wave, even though the broadening mechanisms are conventionally homogeneous. This effect would be expected to work against the tendency of dye-switched ruby lasers to operate in a single mode. Related effects should play a role in optical pulse generators and in other devices using saturable absorbers.
RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACE
Authors: Whelan M. V. , Goemans A. H. , Goossens L. M. C.
Published: March 2005

Residual stresses occurring at an oxide-silicon interface are studied by measuring the bending of an oxidized silicon slice which results when the oxide is removed from one face.

The stresses are independent of the orientation of the silicon surface, and over a wide range of the doping level of the silicon. Stresses increase with the speed at which the samples are cooled after the oxidation: An oxide grown in dry O2 causes larger stresses than one grown in wet O2. The stresses measured do not appear to be capable of causing considerable numbers of interface states.
TWO-PHOTON ABSORPTION IN ZnS
Authors: Panizza E.
Published: March 2005

The two-photon absorption spectrum of ZnS at RT and LNT is presented. The magnitude of the nonlinear absorption cross section is discussed with respect to pumping by means of two-photon absorption and with respect to second-harmonic attenuation in ZnS.
CONTINUOUSLY TUNABLE, NARROW-BAND ORGANIC DYE LASERS
Authors: Soffer B. H. , McFarland B. B.
Published: March 2005

Efficient spectral narrowing, and tunability over a wide spectral range, has been demonstrated in solid and liquid organic dye lasers using diffraction gratings as cavity reflectors.
PERFORMANCE OF Ge(Li) DETECTORS IN THE TEMPERATURE RANGE 5.0 TO 170°K
Authors: Sakai E. , Malm H. L.
Published: March 2005

The properties of three Ge(Li) detectors as γ-ray spectrometers were measured over the temperature range 5.0 to 170°K. These detectors, selected to show a range of charge-trapping effects, all exhibited predominantly electron trapping, and optimum resolution occurred between 20 and 30°K where electron-trapping effects were a minimum. As the temperature was reduced it was possible to increase the operating voltage, giving some improvement in resolution. Below 20°K the γ-ray resolution rapidly deteriorated due to the appearance of a slow-rising component (up to 20 μsec) in the preamplifier pulses.
POLARIZATION FILTERING IN HOLOGRAPHY
Authors: Rudder C. L.
Published: March 2005

The effect of specular reflections on the construction of a hologram is examined by polarization filtering. Filtering is accomplished by orienting the plane of polarization of the reference wave perpendicular to that of the incident object beam. It is found that the resolution and tonal range of the reconstructed image are enhanced.
NONLINEAR COUPLING BETWEEN ANTIFERROMAGNETIC RESONANCE MODES IN RbMnF3
Authors: Cole P. H.
Published: March 2005

Nonlinear coupling between antiferromagnetic resonance modes spaced in frequency an octave apart has been shown to occur under suitable conditions in RbMnF3. Calculations of the power-dependent conversion relation for up conversion, and the critical power for subharmonic oscillation, are given. Preliminary measurements of the strength of the second-harmonic power produced are in general agreement with the theory, but the shape of the output pulses suggests some spin-wave excitation is taking place.
MICROWAVE EMISSION FROM MAGNETIC-FIELD-FREE ELECTRON-HOLE PLASMAS
Authors: Ancker-Johnson Betsy
Published: March 2005

Emission is observed only under special plasma conductance conditions. These have been obtained by applying voltages in the form of decreasing steps. Some plasma produced during the initial step remains to produce a higher plasma density during subsequent steps than can be obtained at those lower voltages if they are applied during the initial step. By this means a variety of usually unobtainable conductance conditons have been produced and an approximate threshold curve for the emission has been obtained in terms of current and field strength.
VOLUME EXCITATION OF AN ULTRATHIN CONTINUOUS-WAVE CdSe LASER AT 6900 Å OUTPUT
Authors: Johnson M. R. , Holonyak N. , Sirkis M. D. , Boose E. D.
Published: March 2005

Continuous (CW) operation (at T > 77°K) of an ultrathin CdSe platelet laser which is optically excited by a He–Ne laser is described. The pump power required is less than 50 mW and the laser output is at ∼6900 Å.
POLYMORPHISM IN SOME IV-VI COMPOUNDS INDUCED BY HIGH PRESSURE AND THIN-FILM EPITAXIAL GROWTH
Authors: Mariano A. N. , Chopra K. L.
Published: March 2005

The NaCl structures PbS, PbSe, PbTe and SnTe have been found to transform to a Pnma orthorhombic (distorted NaCl) structure under high pressures. Epitaxial growth on rock salt of thin films of normally orthorhombic (Pnma) SnS, SnSe and PbSnS2 induces NaCl structures. There exists a close correlation between the lattice constants of the corresponding NaCl and the orthorhombic polymorphic structures of the Pb and Sn compounds.
MEASUREMENT OF GROWTH AND DAMPING RATE OF RESISTIVE INSTABILITY IN GASEOUS PLASMA
Authors: Saito Susumu , Hatta Yoshisuke
Published: March 2005

Time rates of growing and damping of resistive instability in gaseous plasma in crossed fields are measured. The discharge tube used is a coaxial cylindrical type with a grid. By means of an external excitation of damping waves or an observation of the transient of self-excitation of waves by an abrupt change of the magnetic field strength, the damping or the growth rates can be determined. The results thus obtained agree with those indicated theoretically.
CHEMICAL VAPOR DEPOSITION OF EPITAXIAL YIG ON YAG AND EPITAXIAL GdIG ON YAG
Authors: Mee J. E. , Archer J. L. , Meade R. H. , Hamilton T. N.
Published: March 2005

Conditions are given for the epitaxial growth of YIG on YAG and GdIG on YAG. The films are identified and characterized by x-ray, electron diffraction, electron microprobe, and magneto-optic studies.
SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS
Authors: Hofstein S. R.
Published: March 2005

Ion transport in the oxide film of a metal-oxide-silicon (MOS) structure is examined. Space-charge-limited ionic current transients are observed, including the well known Many-Mark-Helfrich ``cusp.'' It is shown that precautions must be taken to ensure that interface trapping of the ions does not dominate and suppress the SCL currents.
EFFECT OF OXYGEN ADSORPTION ON THE PHOTOELECTRON YIELD FROM TUNGSTEN IN THE VACUUM ULTRAVIOLET
Authors: Waclawski B. J. , Hughey L. R. , Madden R. P.
Published: March 2005

The effect of adsorbed oxygen on the photoelectron yield of bulk polycrystalline tungsten was studied at photon energies of 7.7, 10.2, 11.8, 16.9, and 21.2 eV. Use of ultrahigh vacua ∼3 × 10−10 torr ensured sample cleanliness prior to oxygen exposure. The photoelectron yield decreases with oxygen exposure because of the increase in the electronic work function of the tungsten photocathode. However, at hv = 21.2 eV, an increase in photoelectron yield with oxygen exposure also appears and is believed to be due to photoelectron emission from the adsorbed oxygen atoms.
ELASTIC SURFACE WAVES IN α-QUARTZ: OBSERVATION OF LEAKY SURFACE WAVES
Authors: Engan H. , Ingebrigtsen K. A. , Tonning A.
Published: March 2005

Results are given of measuring the phase velocity of elastic surface waves in the three principal planes of α-quartz. The observation of a leaky surface wave is reported.
PHOTOCONDUCTIVITY AND IMPACT IONIZATION IN CdS
Authors: Crandall Richard S.
Published: March 2005

Photocurrent measurements on single-crystal semi-insulating CdS at 4.2°K show that the photocurrent does not undergo multiplication by impact ionization even though the dark current does.
EMPIRICAL RELATIONSHIP BETWEEN SHEAR STRENGTH, PRESSURE AND TEMPERATURE
Authors: Towle Laird C.
Published: March 2005

An empirical formula has been found connecting the pressure and temperature dependence of the shear strength of crystalline solids. It contains only two adjustable parameters and has been found to be valid for a variety of materials. The formula should prove useful for calculating the shear strength of materials under pressure and/or temperature conditions where direct measurements are inconvenient or impossible.
LOCALIZED VIBRATIONAL MODES IN SILICON: B-P PAIR BANDS
Authors: Tsvetov V. , Allred W. , Spitzer W. G.
Published: March 2005

Two infrared absorption bands attributed to substitutional boron-phosphorus pairs in silicon are observed. The bands are close to the single, isolated boron band and all show approximately the same frequency shift with change in boron isotope. The pair bands occur near 599.7 and 629 cm−1 for 11B and 622.9 and ∼655 cm−1 for 10B. The results are compared with the theory of Elliott and Pfeuty. The number of pair bands, their isotope shift, and their proximity to the isolated B band are in agreement with theory. The Δν ∼ 30 cm−1 is an order of magnitude larger than predicted by the isotopic model indicating changes in force constants.
HIGH FIELD DOMAINS IN n-TYPE CADMIUM SULPHIDE
Authors: Haydl William H.
Published: March 2005

Experimental results on the high electric-field-domain formation in semiconducting n-type CdS are presented. We conclude from the experiment that certain shear-wave components of the thermal acoustic noise are amplified and cause a domain to form. The results presented seem to be the first which clearly distinguish between acoustic noise and shock-excited noise.
STIMULATION OF THERMOLUMINESCENCE IN LiF BY RUBY LASER LIGHT
Authors: Fréchette V. D. , Cline Carl
Published: March 2005

Single crystals of LiF, fractured internally at liquid nitrogen temperature by a focused 30-nsec pulse from a ruby laser, showed thermoluminescence peaks at 100° and 140°K. Reddish coloration at the damage centers annealed out at 550°C. Analog of the glow peaks with those reported for LiF subjected to x rays and gamma rays and attributed to release of self-trapped electrons with subsequent transitions and recombinations, suggests that the ruby laser pulse can ionize electrons in LiF, possibly by multiple photon processes or through the medium of defect species.
A p-n JUNCTION IN SILICON WHISKERS GROWN BY VLS METHODS
Authors: Komatsu E. , Higuchi Y. , Niina T.
Published: March 2005

The preparation of a p-n junction in a Si whisker grown by VLS methods from gold-silicon alloys is described. The junction formed was identified by etching and by scanning electron microscopy. Characteristics of the junction were a backward breakdown voltage of about 19 V and a forward breakdown voltage of about 0.5 V.
LASER-INDUCED HIGH-PRESSURE SHOCK WAVES IN WATER
Authors: Bell C. E. , Landt J. A.
Published: March 2005

High-pressure shock waves have been generated in water by Q-switched lasers. A technique for observing the shocks using the laser as an illuminating source for a shadowgraph system and as a tool for generating the shocks is described.