bluuebunny/crossref_metadata_2025 huggingface dataset:
A New Perspective on the Creation of Neologisms
Authors: LIN Ming-chang
Published: March 2014

This article proposes a new research perspective towards the reasons for devising neologisms.Instead of reflecting upon this topic from the perspective of "a word", the language user's psychological requirements for devising neologisms are being used. This methodology introduces us to some distinct observations, especially regarding the user's inner motivations for devising and using neologisms. Although "functional" and/or "denotative" descriptions of neologisms are mentioned, much regard is paid to distinct psychological needs of the ones devising neologisms. In sum it can be said that some neologisms are not devised for the purpose of describing new objects, but are set up in accordance to user's descriptive tastes and his sense of language.
Metagenomic analysis of organic matter degradation in methane‐rich Arctic Ocean sediments
Authors: Kirchman David L. , Hanson Thomas E. , Cottrell Matthew T. , Hamdan Leila J.
Published: March 2014

Organic material is degraded anaerobically by a complex community of microbes making up the anaerobic food chain. This community was examined in methane‐rich sediments of the Beaufort Sea, Alaska, using metagenomic sequencing, along with tag pyrosequencing and quantitative polymerase chain reaction analyses of 16S ribosomal ribonucleic acid genes. The goal of the study was to examine the relative abundance and taxonomic composition of organisms making up different parts of the anaerobic food chain. The metagenomic data suggested that genes for producing acetate via fermentation (“acetate fermentation”) were more common than genes producing other fermentation by‐products, but acetate fermentation genes made up only 32% of all genes for fermentation pathways while genes for fermentation to ethanol accounted for 27%. The genes for the production of other compounds, including propionate (15%), butyrate (11%), lactate (4%), and hydrogen gas (11%), were also often abundant. Similar results were observed when the same approach was used to analyze metagenomic data previously collected from two low‐latitude systems with methane‐rich sediments. In all of these sediments, genes for pathways producing organic acids, ethanol, and hydrogen gas were about 30‐fold more abundant than the genes for sulfate reduction and methanogenesis, processes which consume those compounds. Our results suggest that the type and abundance of fermentative microbes potentially affect the taxonomic composition of sulfate‐reducing bacteria and methanogenic archaea and rates of organic carbon mineralization by the anaerobic food chain.
Structural Diversity of Hydrogen-Bonded Networks of [Co(NH3)6]3+ Complex Cations and Acetylenedicarboxylic Acid Anions
Authors: Seidel Rüdiger W. , Goddard Richard , Gramm Verena , Ruschewitz Uwe
Published: March 2014

2011

The crystal structure of [Co(NH3)6](ADC)(HADC) · 2H2O (1) (ADC2- =acetylenedicarboxylate) (P21=n, Z = 4) was mistakenly described as containing the [Co(H2O)6]3+ ion [I. Stein, U. Ruschewitz, Z. Naturforsch. , 66b, 471 - 478]. A revision is reported. While attempting to reproduce 1, we isolated phase-pure crystalline material of [Co(NH3)6]Cl2(HADC) · H2O (2), the crystal structure of which was also reported in the article above. Upon standing in the aqueous mother liquor at room temperature for several days, the needle-shaped crystals of 2disappear, while blockshaped crystals of the formerly unknown compound [Co(NH3)6](ADC)(HADC) (3) grow. Satellite peaks in the X-ray diffraction frames indicate that the crystal structure is incommensurately modulated. Dissolving crystals of 3 in water at elevated temperature leads to plate-shaped crystals of the new compound [Co(NH3)6]2(ADC)3 · 3H2O (4) upon slow cooling to room temperature. Compounds 2- 4 were investigated by elemental analysis, powder X-ray diffraction and infrared spectroscopy. Structural characterization of 4 by single-crystal X-ray analysis was also achieved (P1̅ , Z = 2). Complex 1, however, could not be reproduced
Mechanothermal Synthesis of SrSnO3
Authors: Berbenni Vittorio , Milanese Chiara , Bruni Giovanna , Girella Alessandro , Marini Amedeo
Published: March 2014

The synthesis of strontium metastannate (SrSnO3) has been performed by coupling mechanical activation with thermal activation of SnC2O4-SrCO3 mixtures. The solid-state reaction has been studied by TG-DSC analysis and powder X-ray diffraction. By annealing experiments performed on physical mixtures (no mechanical activation) it has been assessed that the formation of SrSnO3 occurs through the intermediate Sr2SnO4 and is complete only after annealing at 1400 °C. By performing the annealing experiments on activated mixtures it has been established that the formation of SrSnO3 takes place directly at temperatures between 800 and 1000 °C. The SrSnO3 samples obtained at 800 and 900 °C show, by TG analysis, mass loss processes that suggest that SrSnO3 obtained at these temperatures absorbs H2O and CO2 from the air so that its use as gas sensor can be envisaged. This is no longer true for the sample obtained at 1000 °C or above
The Silicides YT2Si2 (T =Co, Ni, Cu, Ru, Rh, Pd): A Systematic Study by 89Y Solid-state NMR Spectroscopy
Authors: Höting Christoph , Eckert Hellmut , Matar Samir F. , Rodewald Ute Ch. , Pöttgen Rainer
Published: March 2014

The ThCr2Si2-type silicides YT2Si2 (T =Co, Ni, Cu, Ru, Rh, Pd) were synthesized from the elements by arc-melting. They were characterized by powder X-ray diffraction, and the structures were refined on the basis of single-crystal X-ray diffractometer data. The course of the lattice parameters shows a distinct anomaly for YRu2Si2 which has by far the smallest c/a ratio along with elongated Y- Si distances. Systematic 89Y solid-state NMR spectra show large Knight shifts arising from unpaired conduction electron spin density near the Fermi edge. The Knight shift decreases with increasing valence electron count (VEC), reflecting the sensitivity of this parameter to electronic properties. The particularly strong structural distortion observed in YRu2Si2 manifests itself in a sizeable magnetic shielding anisotropy. Electronic structure calculations for YRu2Si2 and YRh2Si2 reveal similar projected density of states (PDOS) shapes with an energy upshift of the Fermi level in YRh2Si2 due to the extra electron brought in by Rh. As a consequence, the PDOS at the Fermi energy is twice as large in the Ru compound as in the Rh compound. While both compounds show the major bonding interaction within the T2Si2 layers, YRh2Si2 exhibits significantly stronger Y-Si bonding
Convenient Synthesis and Molecular Structure of PPN[RhCl2(CO)2] (PPN+ = Bis(triphenylphosphane)iminium)
Authors: Böttcher Hans-Christian , Mayer Peter
Published: March 2014

The reaction of hydrated rhodium(III) chloride with formic acid in refluxing ethoxyethanol afforded in a convenient way the known rhodium carbonyl chlorido complex anion cis-[RhCl2(CO)2]-. This species was formed in good yield and was characterized as its PPN salt (PPN+ = bis(triphenylphosphane)iminium cation). The molecular structure of the title compound PPN[RhCl2(CO)2] was confirmed by X-ray diffraction and shown to be isomorphous to PPN[IrCl2(CO)2]
Influence of selected variables on trihalomethane removals by spray aeration
Authors: Cecchetti Aidan R. , Roakes Harrison , Collins M. Robin
Published: March 2014

The widespread use of chlorine and the reluctance of drinking water providers to alter their disinfection systems have sparked increased investigation into posttreatment removal of trihalomethanes (THMs). One posttreatment method is spray aeration, in which water is sprayed through showerheads in storage tanks. In this research the influence of various parameters on THM removals was evaluated using a mass balance–based model and sensitivity analysis. THM formation and the configuration (droplet size, travel distance, and spray pattern) and magnitude (percent recycle) of the sprayed water flow were determined to be the most influential parameters, whereas temperature, spray angle for uniform cone flow distribution, and THM species were the least influential factors. Practitioners should find these results helpful in determining the most important design parameters for spray aeration systems. In addition, the study elucidates the advantages of spray aeration in removing brominated THM species.
Estimation of single‐family residential irrigation demand management effectiveness
Authors: Friedman Kenneth , Heaney James P , Morales Miguel , Palenchar John
Published: March 2014

This article presents a systematic procedure to quantify savings potential of single‐family residential irrigation demand management strategies that can be used to evaluate the optimal blend of these strategies to achieve specified goals. Current irrigation practices, irrigable area, and irrigation application rate are derived for each single‐family residence based on parcel‐level tax assessor's data linked to customer‐level monthly water billing data. Water savings are calculated directly as the difference between current and proposed use after implementation of a management option for each residence. This information is used to develop performance functions that estimate total water savings as a function of the number of implementations for each residence. This procedure allows demand management options to be compared directly with other supply augmentation options when determining the optimal blend. Probabilistic models are derived from benchmark parcel‐level datasets for evaluation of other utilities where direct measurements are unavailable.
Genetic variation in meat production related traits in reindeer (Rangifer t. tarandus)
Authors: Muuttoranta Kirsi , Holand Øystein , Røed Knut H. , Tapio Miika , Nieminen Mauri , Mäki-Tanila Asko
Published: March 2014

In reindeer husbandry, animal breeding could offer tools for improving productivity by selection. The traits affecting meat production efficiency are primarily related to calf growth and survival, and to dam’s longevity and lifetime ability to raise heavy calves. Information on genetic (co)variation in these traits is scarce but needed in estimating the potential and effectiveness of selection as well as biological constraints. The objectives of the study were to estimate these genetic parameters from the data of an experimental reindeer herd at Kutuharju (Inari, Finland). Heritabilities (h2) and genetic correlations (rg) among the average daily gain of calves (ADG), dams’ age at maturity, individual fitness (λind) and the cumulative sum of her calves’ weaning weight over seven years (WW7) were studied with AS-Reml software using the dataset from the experimental herd. The pedigree included also sire information to allow the separation of the maternal effects. Direct and maternal heritabilities of ADG were moderate (0.24±0.09 and 0.18±0.05, respectively) and the direct-maternal correlation was highly negative (-0.73±0.17). Indeed, selection on growth necessitates information on both calf and dam. The genetic correlation of growth with birth date and birth weight could not be detected with the data. The age at maturity and λind had a small heritable component (0.07±0.12 and 0.10±0.06, respectively), whereas the heritability value of WW7 was 0.23±0.07. Reindeer herders’ empirical selection on calf’s autumn weight favours fast growth (rg between growth and autumn weight = 0.35±0.24). Dam’s weight in her first autumn was strongly correlated with her lifetime production expressed by her individual fitness (rg = 0.71±0.23) and the cumulative sum of her calves’ weaning weight (rg = 0.63±0.12). Hence, the early information on the dam (her weight in her first autumn or her first calf’s autumn weight) works as useful selection criteria for the traits related to lifetime production.
Localized surface plasmon resonance effect in organic light-emitting devices with Ag islands
Authors: Shimazaki Noritaka , Naka Shigeki , Okada Hiroyuki
Published: March 2014

We report on luminescence enhancement of organic light-emitting devices (OLEDs) with silver islands (i-Ag) by a localized surface plasmon resonance (LSPR) effect. The devices were fabricated using tetraphenylporphyrin (TPP) as the red emission material, bis[N-(1-naphthyl)-N-phenyl] benzidine (α-NPD) as the blue emission and hole transport material, and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as the electron transport material. To clarify the position of emission enhancement by energy transfer from i-Ag, an ultrathin TPP layer located within the α-NPD layer. In the device with i-Ag and the TPP layer located over 10 nm from i-Ag, TPP emission was enhanced in comparison with the device without i-Ag. The enhancement of TPP emission was suggested to be the effect of the enhanced electric field resulting from LSPR excited by α-NPD emission.
Co-design of application software and NAND flash memory in solid-state drive for relational database storage system
Authors: Miyaji Kousuke , Sun Chao , Soga Ayumi , Takeuchi Ken
Published: March 2014

A relational database management system (RDBMS) is designed based on NAND flash solid-state drive (SSD) for storage. By vertically integrating the storage engine (SE) and the flash translation layer (FTL), system performance is maximized and the internal SSD overhead is minimized. The proposed RDBMS SE utilizes physical information about the NAND flash memory which is supplied from the FTL. The query operation is also optimized for SSD. By these treatments, page-copy-less garbage collection is achieved and data fragmentation in the NAND flash memory is suppressed. As a result, RDBMS performance increases by 3.8 times, power consumption of SSD decreases by 46% and SSD life time is increased by 61%. The effectiveness of the proposed scheme increases with larger erase block sizes, which matches the future scaling trend of three-dimensional (3D-) NAND flash memories. The preferable row data size of the proposed scheme is below 500 byte for 16 kbyte page size.
1200 V Schottky controlled injection diode: An advanced anode concept for low injection efficiency
Authors: Matsudai Tomoko , Ogura Tsuneo , Ohino Yuuichi , Misu Shinichiro , Kobayashi Taichi , Nakamura Kazutoshi
Published: March 2014

This paper proposes a novel 1200 V p–i–n diode concept for realizing low forward voltage drop, low reverse recovery loss, and low leakage current at high temperatures above 175 °C. These characteristics are achieved by adopting a combination of flat and linear distributions of carrier concentration from the anode side to the cathode side and reduced injection efficiencies at both sides under forward bias conditions with high carrier lifetime. Furthermore, we have obtained high reverse recovery ruggedness by combining a new edge termination design with a Schottky contact on the cathode side and a deep P anode layer design on the anode side.
(Invited) “High-Performance Schottky-Barrier IR-CCD Image Sensors”
Authors: Kosonocky Walter F. , Elabd Hammam
Published: March 2014

High-performance PtSi and Pd2Si Schottky-barrier IR-CCD image sensors were developed with 32×63 and 64×128 elements. PtSi Schottky-barrier detectors (SBDs) operated at 80 K have quantum efficiency of several percent in the 3 to 5 µm spectral range and cut-off wavelength of about 6.0 µm. Pd2Si SBDs operated between 120 and 140 K have cut-off wavelength of 3.6 µm and quantum efficiency in the range of 1.0 to 8.0% in the 1.0 to 2.5 µm band. High quality thermal imaging has been demonstrated with a 64×128-element PtSi Schottky-barrier IR-CCD imager in a TV compatible IR camera operated with 60 frames per second. Also SWIR reflective infrared imaging of very good quality was achieved with the Pd2Si Schottky-barrier IR-CCD image sensor.
High Density Frame Transfer Image Sensor
Authors: Beck G. A. , Collet M. G. , Gils J. A. A. van , Klinkhamer A. J. , Peek H. L. , Ruis W. N. J. , Santen J. G. van , Smit T. F. , Vandormael G. T. J.
Published: March 2014

An image sensor for a consumer camera should be inexpensive and small. Although the frame transfer organisation requires separate image and storage sections, our results show that a very compact design is possible, high resolution and high sensitivity being obtained with a chip area of 90 mm2 for 3.6 µm design rules.
High Speed Bipolar ECL Devices Using a Vertically Isolated Self-Aligned Transistor
Authors: Fujita T. , Sakai H. , Kawakita K. , Takemoto T.
Published: March 2014

We have fabricated ECL devices such as ring oscillators and a 1/16 divider to evaluate the performance of a vertically isolated self-aligned transistor which is named VIST. This VIST has a bird's beak-free oxide isolation and an inactive base of high impurity concentration formed extremely near the emitter region. Moreover, all the side walls of emitter, base and collector are covered with oxide film. Using VIST, propagation delay time of 160 psec was achieved in an ECL ring oscillator. The ECL divider operated at frequencies up to 2.5 GHz with 21 mW power dissipation per stage. This operating frequency is the highest value ever reported of silicon dividers.
Formation of Shallow p+n Junction by Low Temperature Annealing
Authors: Yamada K. , Kashiwagi M. , Taniguchi K.
Published: March 2014

The formation of shallow p+n junction with B+ implantation in silicon was investigated. A rapid diffusion of implanted borons was observed in the initial stage of the annealing for activation (in 10 sec), and it was independent of the annealing temperature (600∼1000°C) and determined the shallower limit of B+ implanted p+n junction depth, 0.25 and 0.4 microns for the B+ acceleration of 10 and 20 KV, respectively. Appropriate Si+ implantation subsequent to B+ implantation enabled the annealing temperature reduction to about 600°C with activation (sheet resistivity) and crystallinity (junction quality) comparable to those of high temperature annealing (900∼1000°C). It is suggested that the rapid diffusion and the reduction in the annealing temperature resulted from the excess configuration entropy in the ion implanted layer which corresponded to high temperature situation in effect.
(Invited) Laser Photochemical Processing for Microelectronics
Authors: Ehrlich D. J. , Deutsch T. F. , Jr. R. M. Osgood, , Silversmith D. J.
Published: March 2014

UV and visible lasers can initiate chemical reactions which can be used to process semiconductors. This paper reviews the physical mechanisms involved in such processing and the applications which have been developed. Pulsed UV excimer lasers have been applied to largearea doping while focused cw laser beams have initiated localized reactions leading to film deposition, etching, and localized doping.
Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures
Authors: Ishiwara Hiroshi , Asano Tanemasa
Published: March 2014

Epitaxial growth of Ca
x
Sr1-x
F2 films onto Si(111) substrates and the growth of Ge films onto the fluoride/Si structure have been investigated. It has been found from ion channeling and backscattering measurements that at temperatures higher than 600°C a mixed fluoride film with good crystalline quality can be gnown and that a Ge overlayer of good quality is obtained when the lattice matching condition is satisfied. It has also been found from X-ray diffraction analysis that the lattice constant of the mixed fluoride film on Si changes linearly with the composition ratio.
(Invited) Epitaxial Silicide Films for Integrated Circuits and Future Devices
Authors: Furukawa Seijiro , Ishiwara Hiroshi
Published: March 2014

Epitaxial growth of metal-silicide films onto Si substrates and its application to future semiconductor devices are reviewed. The growth conditions, electrical and structural properties, thermal stability, and irradiation response of epitaxial PtSi, Pd2Si, NiSi2, and CoSi2 films are discussed. Si/silicide/Si structures are also described as an example of device applications.
Evaluation and Control of Grain Boundaries in Laser-Recrystallized Polysilicon Islands for Device Fabrication
Authors: Nishimura Tadashi , Ishizu Akira , Akasaka Yoichi
Published: March 2014

Directions of grain boundaries in laser-recrystallized polycrystalline silicon (polysilicon) islands are found to be arranged along with the laser scan direction, and are connected to the electrical characteristics of MOSFETs fabricated in polysilicon islands. In the case of the laser scan parallel to the channel direction, grain boundaries work as fast-diffusion paths of arsenic from source and drain into the channel, and results in a decrease of effective channel length of MOSFET. But in the case of the laser scan perpendicular to the channel direction, there are few grain boundaries contributing to diffusion paths of arsenic. The maximum electron mobility of 590 cm2/V sec approaching to that on a single crystalline silicon can be obtained in devices with a channel length of 3 µm, though grain boundaries work as an additional potential barriers for carriers. A nine stage ring oscillator is fabricated by applying these results. The minimum propagation delay of 38 nsec is obtained.
Monolithic Integrated Device for Light Amplification
Authors: Sasaki Akio , Matsuda Ken-ichi , Kimura Yuichiro , Fujita Shigeo
Published: March 2014

A monolithic light amplifier has been constructed in an LPE InGaAsP/InP multi-layered structure which includes a heterojunction phototransistor (HPT) and a double heterojunction (DH) light-emitting diode (LED). A high-current and high-gain HPT required to drive a DHLED has been successfully produced by using Cd as a p-type dopant for the base region. A positive gain of 1.3 and a differential power gain of 6 have been achieved by suppressing the optical feedback from the LED to the HPT.
Characteristics of Double-Heterostructure Lasers in Strong Magnetic Fields
Authors: Arakawa Y. , Sakaki H. , Nishioka M. , Kido G. , Miura N.
Published: March 2014

Temperature dependence of threshold current of double-heterostructure (DH) GaAs–GaAlAs lasers is measured in strong magnetic fields B up to 30 Tesla. The improvement of T
0 value from T
0=144°C (B=0) to T
0=313°C (B=24 Tesla) is observed near room temperature (-40°C∼30°C). This improvement is ascribed to the change in the state density function of electrons, which is caused by the quantum confinement effect of carriers by B.
In order to confirm further the occurrence of 1D electronic state in lasers, the spectral characteristics is also measured and the shift of the lasing wavelength with B is shown to correspond to the upward shift of the lowest Landau level with the increase of B.
(Invited) VLSI Technology Overviews and Trends
Authors: Sze S.M.
Published: March 2014

We entered the very-large-scale-inteuration (VLSI) era in 1975. Since that time VLSI technoiugy has been, and continues to be, refined and improved. We have moved from diffusion to ion implantation, from wet etching to dry etching, and from contact printing to scanning projection or step-and-repeat lithography. By 1990 we will employ larger silicon wafers (∼150 mm in diameter), smaller feature lengths (∼0.5 µm), and lower processing temperatures (<900°C). Process simulation and advanced diagnostic techniques will be extensively used for on-line process design and for reliability analysis, respectively. Ultra-sophisticated chips with millions of components and on-chip system organizations will be built in response to the enormous market demand of the Information Age. This paper discusses those advances and future trends in VLSI technology.
Buried Facet BMH AlGaAs Laser
Authors: Okajima Masaki , Watanabe Yukio , Nagasaka Hiroko , Motegi Nawoto
Published: March 2014

The Buried Facet Buried Multi-Heterostructure (BBH) laser has been developed. The BBH laser, which has transparent window regions adjacent to laser mirrors, is expected to increase maximum output power of the Buried Multi-Heterostructure (BMH) laser, while retaining its good mode characteristics : stable fundamental transverse mode oscillation with narrow isotropic beam divergence. More than 200 mW/facet maximum output power was obtained under pulsed operation, which is more than three times as much as that for the conventional BMH lasers with Al2O3 coating. The maximum power was limited by the temperature rise in the heterojunction, not by the catastrophic optical damage. The window region influence on threshold current and differential quantum efficiency was experimentally and theoretically studied.
High-Speed E/D GaAs ICs with Closely-Spaced FET Electrodes
Authors: Furutsuka Takashi , Tsuji Tsutomu , Katano Fumiaki , Kanamori Mikio , Higashisaka Asamitsu , Takayama Yoichiro
Published: March 2014

In order to realize excellent performance on E/D GaAs ICs, the basic MESFET structure and the performance dependence on device geometry were experimentally investigated. By adopting closely-spaced electrode FET structure and by reducing the gate length, high-speed, low-power ICs could be fabricated. A 37.2 ps propagation delay (t
pd) with very low power dissipation (P
d) of 261 µW and a 34.1 ps minimum (t
pd) were obtained from a 15-stage ring oscillator with 0.4 µm-long gate FETs. In a binary frequency divider with 0.5 µm-long gate FETs, a 2.2 GHz maximum clock frequency (f
C) and a 1.6 GHzf
C at 1.0 V drain bias with 228 µW/gate P
d were achieved.
An MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology
Authors: Suyama Katsuhiko , Shimizu Haruo , Yokogawa Shigeru , Nakayama Yoshiro , Shibatomi Akihiro
Published: March 2014

Direct-coupled FET logic (DCFL) circuits with self-aligned enhancement/depletion GaAs MESFETs are the most promising candidate for developing GaAs MSI/LSI circuits. A 4×4-bit parallel multiplier was fabricated as a test vehicle to demonstrate high-speed low-power circuit performance. The circuit chip measures 1.5 mm ×1.3 mm in size and contains 168 NOR gates with 2 µm gate length enhancement/depletion FETs.
To evaluate the operating speed, a full adder implemented ring oscillator was fabricated. The propagation delay per gate was in the range between 210 and 260 ps with a power dissipation of 0.36 mW/gate. 4×4-bit multiplication was performed in 3.7 ns, with a power dissipation of 97 mW at a supply voltage of 1.5 V.
MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs
Authors: Ohata Keiichi , Terao Hiroshi , Sunakawa Haruo , Takayama Yoichiro
Published: March 2014

Low-noise GaAs MESFETs with GaAlAs buffer layers exhibited high microwave performance for the first time. The active and buffer layers were prepared by MOCVD. 0.5 µm-gate flat-structure MESFETs exhibited noise figures of 1.15 dB (11.6 dB gain) at 4 GHz and 2.6 dB (8.7 dB gain) at 12 GHz. It was also noted that the transconductance remarkably increased by cooling the GaAlAs buffer FETs, in spite of the highly doped active layer.
UHF/L Band Low-Noise Dual-Gate GaAs FETs
Authors: Siqi Cheng , Xianqi Xia
Published: March 2014

Low-noise dual-gate GaAs MESFETs applicable to UHF/L band have been developed at NSR (Nanjing Solid State Devices Research) using multilayer GaAs grown by V.P.E. and a recessed-gate structure. For a plastic packaged device, an optimum noise figure of 0.7 dB and an associated gain of 20 dB at 1 GHz were measured, and for a metal-ceramic packaged device, the former was 0.9 dB and the latter was 15 dB at 2 GHz. It is predicated that these devices will be extensively applied to UHF TV receivers and L band communications and so forth.
(Invited) Heterojunction Bipolar Transistors
Authors: Jr. J. S. Harris, , Asbeck P. M. , Miller D. L.
Published: March 2014

(AlGa)As–GaAs npn bipolar transistors have been analyzed for application to high speed digital integrated circuits. Projected propagation delays of 10 ps and associated speed x power products of 30 fJ make this an attractive high speed technology. Discrete (AlGa)As–GaAs npn bipolar transistors have been fabricated on n+ GaAs substrates. The epitaxial structures have been grown by MBE to produce very thin, highly doped base layers. Current gains up to 190 have been measured. Microwave measurements on packaged devices yield a value of f
τ=11 GHz. This value is limited by package parasitics. Modeling the entire packaged device yields a value Of f
τ=34 GHz for the intrinsic HBT. This level of performance should be realizable in ICs and affirm the potential of this technology for ultra-high speed ICs.
GaAs P-N Junction Formation by Carbon Ion Implantation
Authors: Mita Yoh , Tsukada Noriaki , Hashimoto Masafumi , Semura Shigeru , Sugata Sumio
Published: March 2014

Carbon ion implantation accompanied with boron ion implantation into n-type GaAs crystals has proved to markedly improve the carbon activation ratio from 4% to 20%. P-n junction diodes fabricated by this technique showed good rectifying characteristics and well-defined profile.
Modified Schottky Barrier Heights by Interfacial Doped Layers: MBE Al on GaAs
Authors: Eglash S. J. , Pan Shihong , Mo Dang , Spicer W. E. , Collins D. M.
Published: March 2014

Modifications to the Schottky barrier heights of Al: GaAs diodes were achieved through the use of heavily doped semiconductor interfacial layers. These contacts were grown entirely in an ultra-high vacuum molecular beam epitaxy system, allowing the preparation of nearly ideal metal: semiconductor structures. We used p+-GaAs layers (N

A
=1018-1020 cm-3, t

p
=50–360 Å) at Al: n-GaAs interfaces (N

D
=5×1016 cm-3) to reproducibly increase the barrier height from 0.79 eV to 1.24 eV, with minimal degradation of the diode ideality factor (n=1.03–1.21). Our modeling of these diodes utilized the results of the unified defect model for surface and interface states on III-V compound semiconductors. The results of current-voltage and capacitance-voltage measurements on these diodes are compared with theory.
(Invited) Recent Advances in Josephson Material and Device
Authors: Hayakawa Hisao
Published: March 2014

Recent developments in Josephson technologies are presented emphasizing new material and device. As for Josephson materials, junction technologies based on NbN and/or Nb are discussed in conjunction with fabrication processes. A new direct coupled logic device with four Josephson junctions is described with the logic family and the circuit operations.
Fabrication and Properties of a-Si: H Photoreceptor and Its Application to Laser Beam Printer
Authors: Nakayama Yoshikazu , Natsuhara Toshiya , Nakano Masao , Yamamoto Nobuyuki , Kawamura Takao
Published: March 2014

A high sensitivity a-Si: H photoreceptor drum is fabricated using a capacitively coupled rf glow discharge (GD) system by doping boron (B2H6) and oxygen. The photoreceptor durm exhibits its maximum spectral sensitivity at 650 nm and enough sensitivity is still observed at longer wavelength range of 760–780 nm.
Applying this photoreceptor drum to a laser printer using semiconductor laser diode (770 nm, 5 mW), a good hard copy is obtained with a resolution of 9.6 dot/mm and a printing speed of 20 sheet/min (A4 size) at an incident beam energy of 1 µJ/cm2.
High Temperature and High Pressure pH Sensors with Sputtered Iridium Oxide Films
Authors: Katsube Teruaki , Lauks Imants R. , Spiegel Jan van der , Zemel Jay N.
Published: March 2014

Sputtered iridium oxide films (SIROF) are investigated as a pH sensitive membrane to be used in aqueous solutions in wide range of temperature and pressure. The temperature dependence of the pH response of SIROF is almost equal to the Nernstian theoretical value of 2.303 kT/q in the temperature range between 0–100 °C. The long term stability of the pH response and the influence of various ion interferences seems to be in an acceptable range for practical use. SIROF is also found to be stable in high temperature and high pressure water up to 200°C and 4000 psi. By usiing SIROF as an ion sensitive membrane combined with a metal silicide coating as a barrier layer, the ICD (ion controlled diode) is shown to be a promising candidate as a high temperature and high pressure pH sensor.
A 10×10 Polycrystalline-Silicon Thin-Film Transistor Matrix for Liquid-Crystal Display
Authors: Matsui Makoto , Owada Jun-ichi , Shiraki Yasuhiro , Maruyama Eiichi , Kawakami Hideaki
Published: March 2014

A 10×10 thin-film transistor (TFT) matrix has been fabricated using a molecular beam deposited polycrystalline silicon film on a glass substrate by low-temperature (below 600°C) fabrication processes. The field-effect mobility of the TFT element is 40 cm2/V·s at a gate voltage of 10 V, and the response time is less than 10 ns. Combining the TFT matrix with a twisted-nematic liquid-crystal layer, a transmissive-type active matrix liquid-crystal display. It has been shown that the polycrystalline silicon TFT matrix is compatible with a liquid-crystal cell both from the viewpoint of device fabrication and of TFT characteristics.
Photo-Conductive, Low Impurity-Diffusive, Heat-Resisting a-Si Formed by Glow-Discharged Decomposition of SiF2 and H2 Mixture
Authors: Matsumura Hideki , Furukawa Seijiro
Published: March 2014

A new type of hydro-fluorinated amorphous-silicon (a-Si: F: H) is formed by the glow-discharged decomposition of H2 and SiF2 gas mixture. SiF2 is intermediate-state active gas and produced by chemical reaction between SiF4 gas and solid silicon. Deposition rate and photo-conductive property of this a-Si: F: H are studied for various deposition conditions. Change of its property due to annealing and impurity diffusion in it are also studied. It is found that this a-Si: F: H is photo-conductive as highly as the best hydrogenated amorphous-silicon (a-Si: H) even for samples formed with high deposition rate near to 10 Å/sec, and also that the impurity diffusion in it is much smaller than that in a-Si: H, by at least by several orders of magnitude.
New Dynamic RAM Cell Combined with Hi–C Structure
Authors: Ozaki Hideyuki , Shimotori Kazuhiro , Fujishima Kazuyasu , Satoh Shin-ichi , Nakano Takao
Published: March 2014

A new dynamic RAM cell combined with the Hi–C structure is proposed and its effectiveness is confirmed. The feature of the new cell is to isolate each cell capacitor by the p+-region of the Hi–C structure, instead of the thick SiO2 layer. As the result, the new cell reduces the loss in the storage capacitance by the lateral oxidation, in spite of the conventional LOCOS process. The storage capacitance of the new cell is 13% larger than that of the conventional one. The threshold voltage of the parasitic transistor for isolating adjacent cells was 2.1 V. The breakdown voltage of the new cell was 12 V, which was determined by the p-n junction of the Hi–C structure. The leakage current of the new cell was the same as that of the conventional one.
Dislocation Generation due to Stress Induced by Oxidation in Si Grooves
Authors: Takano Yukio , Kozuka Hirotsugu
Published: March 2014

Stress induced by thermally grown SiO2 in grooves formed on a Si surfaceis experimentally and theoretically discussed. It is shown that dislocations are generated from the fine groove when the Si crystal is annealed at 1000°C in an O2 gas. However, dislocations are hardly generated when the Si crystal is annealed at 1100°C. Growing SiO2 film on the bottom of a groove exerts compressive stress, because Si volume expands about 2.3 times when it changes into SiO2 and because the grown SiO2 cannot horizontally expand. The stress is calculated by using Maxwell viscoelastic theory to explain the experimental results.
Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption
Authors: Warabisako Terunori , Saitoh Tadashi , Motooka Teruaki , Tokuyama Takashi
Published: March 2014

Carrier lifetime shorter than 0.8 µs can successfully be measured by transient IR transmission. This method includes carrier generation with a Q-switched Nd: YAG laser of a wavelength near the Si absorption edge and free carrier absorption of a CO2 laser beam. Relaxation in the IR transmission is shown to directly reflect excess carrier concentration decay. This method is useful in measuring rather highly doped Si wafers, especially for solar cell production.
Soft Error Analysis of Fully Static MOS RAM
Authors: Yoshimoto Masahiko , Anami Kenji , Shinohara Hirofumi , Hirata Yoshihiro , Yoshihara Tsutomu , Nakano Takao
Published: March 2014

The static MOS RAM with the polysilicon resistive load for the cell has been analyzed with respect to alpha-particle induced soft error phenomena. The analytical model of soft error will be presented and the effective critical charge Q
crit will be derived. Fully static 16 K-bit NMOS RAMs were fabricated as test vehicles, which were exposed to Am-241 radiation sources for an accelerated test method. The error rate depends on the cycle time and the cell pull-up resistance in the shorter cycle time operation. But in the longer cycle mode, it is regardless of them. Some techniques for error rate reduction which involve thinning gate oxide thickness, adopting Hi–C structure and cell layout techniques will be introduced and their effects will be discussed.
The Dielectrically Isolated High Voltage IC Technology
Authors: Sugawara Yoshitaka , Kamei Tatsuya , Hosokawa Yoshikazu
Published: March 2014

The dielectrically isolated high voltage IC technology was investigated. The diode structure with n+ buried layer as a channel stopper can achieve a high breakdown voltage for the same oxide thickness as compared with a conventional structure. The relations between diode parameters and the breakdown voltage were investigated and a control technique for the fixed charge density was applied to obtain the high voltage device. The dependence of the device characteristics on positions in the IC was studied and it was found that current gain of lateral pnp transisters depended on the positions significantly. The high voltage crossunder interconnection structure utilizing the n+ buried layer was developed. Using all these techniques, a 250 V analog IC and 350 V switching ICs for telecommunication were fabricated.
New Observation of Hot-Carrier Injection Phenomena
Authors: Nakagome Yoshinobu , Takeda Eiji , Kume Hitoshi , Asai Shojiro
Published: March 2014

Hot-carrier injection phenomena in submicron dimension NMOS transistors are studied by directly measuring gate current as low as 1×10-15 A. Experimental results show that two new types of injection, avalanche induced hot-hole (AHH) and hot-electron (AHE) injection, and secondary ionization induced substrate hot-electron (SIHE) injection occur in further scaled down devices with conventional structure.
Both injections, in addition to already reported “Channel Hot-Electron Injection”, cause long term degradation in device characteristics. Serious degradation of transconductance is induced by AHH injection. SIHE injection also induce significant threshold voltage shift, even when V
Ds<3 V. Thus, these injection phenomena can be stringent constraints for the design of a submicron NMOS transistor.
Reduction of Time Quantization Errors in a Phased Array Transducer by Fast Reading of Digital RAM
Authors: Saiga Noriaki , Tanii Kiyoshi
Published: March 2014

The degradation of focused sound beam due to the quantization errors for time delay in a phased array transducer is numerically investigated. Improvement of such degradation was made by developing a delayed phase generator capable of short time quantization. This method is based on the high-speed reading of memorized data by means of parallel usage of conventional RAM. Such a system approaches a variable delay of from zero to 2.4 µsec with the quantized unit of 23.5 nsec. Experiments demonstrated excellent convergence and reduction of off-axis response in focused beam patterns.
Wide Band Ultrasonic Transducer Using Tapered Piezoelectric Ceramics for Non-Destructive Inspection
Authors: Tomikawa Yoshiro , Yamada Hiroaki , Onoe Morio
Published: March 2014

The purpose of this paper is to develop a new ultrasonic transducer for non- destructive inspection composed of tapered piezoelectric ceramics in longitudinal or shear mode. Some experimental results on the transducer are presented. The result obtained is that the transducer can be fabricated easily without backing treatment because the tapered piezoelectric ceramics shows multi-resonances in its vibration. The wide frequency band characteristics can therefore be realized and a narrow ultrasonic pulse signal can be radiated. The radiation direction of longitudinal ultrasonic wave generated by tapered piezoelectric ceramics in shear mode is also described.
ZnO/SiO2/Si Diaphragm Bulk Acoustic Wave Composite Resonators
Authors: Miyasaka Yoichi , Hoshino Shigeki , Takahashi Sadayuki
Published: March 2014

A thin film bulk acoustic wave resonator with ZnO/SiO2/Si composite structure was studied with emphasis on the temperature coefficient of resonant frequency TCF. It was confirmed that zero or low TCF can be obtained with thin SiO2 film. A TCF value as low as -5 ppm/°C was obtained for the experimental resonator. Oscillators using the ZnO/SiO2/Si resonator were constructed and frequency spectra without spurious signal were obtained.
Ultrasonic Monitoring Techniques of Crack Growth and Fracture Mechanics Evaluation of Materials
Authors: Nakazawa Hajime , Hirano Kazumi
Published: March 2014

Ultrasonic monitoring techniques of crack initiation and growth in experimental fracture mechanics are introduced. It is shown that ultrasonics is extremely useful in determination of fracture mechanics characteristics of metallic materials by illustrating elastic-plastic fracture resistance, delayed retardation of fatigue crack growth due to a single peak tensile overloading and stress corrosion cracking under a rising loading condition.
Focusing Ultrasonic Transducer with Broad Bandwidth of the Piano-Concave and Piano-Convex Shapes
Authors: Kobayashi Tsutomu
Published: March 2014

The usual type of ultrasonic transducers can only radiate ultrasonic waves with a narrow frequency bandwidth, but it is possible to have a broad bandwidth by making a wedged shape. Plano-concave and plano-convex transducers, which are modified wedged transducers, are made of piezoelectric ceramics having the thickness extensional vibration. The typical features of both transducers are the capability to radiate continuous and pulsed ultrasonic waves over a broad frequency range, to transmit and receive a short ultrasonic pulse, and to radiate focused ultrasonic waves.
LiTaO3 Resonator Application to Frequency Modulators and Demodulators
Authors: Shimizu Nobuyoshi , Fujiwara Yoshiro , Wakatsuki Noboru
Published: March 2014

A lithium tantalate single crystal (LiTaO3) strip resonator has been developed. The study yielded a resonator with single-mode response and a high Q factor, a small capacitance ratio and a temperature stability. Because the LiTaO3 resonator's inductive frequency range is 7% of the resonant frequency, combining the resonator with a variable-capacitance diode (VCD) produced a frequency modulator and frequency-shift keying (FSK) modulator with a wide variable frequency range. The smooth and sharp phase shift of the resonator, when, combined with a multiplier, produced a highly stable frequency demodulator with a high signal-to-noise (S/N) ratio.
Effect of Electrode Resistance on Insertion Loss and Triple Transit Echo in Surface Acoustic Wave Filter
Authors: Shiba Takashi , Yuhara Akitsuna , Yamada Jun
Published: March 2014

The electrode resistance greatly influences the insertion loss and the triple transit echo for high frequency surface acoustic wave filters. A new equivalent circuit model in which a resistance is arranged in series at the electrical port for periodic section of the transducer is used to analyze this influence and the accuracy of the theoretical results is verified by experiments. A new design technique which suppresses the triple transit echo in the high frequency range by stretching a non-overlapped aperture of the transducers is reported.
Surface Acoustic Wave Characteristics of Grain-Oriented Bismuth Layer-Structured Ferroelectric Ceramics
Authors: Takenaka Tadashi , Sakata Koichiro , Toda Kohji
Published: March 2014

A layer-structure type of ferroelectric ceramic, Pb0.15 (NaBi)0.425Bi4Ti4O15, is described as a new group of surface acoustic wave materials, which is produced by a hot-forging technique. The ceramic has a large anisotropy in the electromechanical coupling factor. This property restricts the mode selection of the surface acoustic wave propagating On the substrate material. The most favorable mode is of Bleustein-Gulyaev-Shimizu type with the velocity of 2812 m/s. A delay line oscillator using the Bleustein-Gulyaev-Shimizu wave is demonstrated.
On the Range Ambiguities of Multifrequency Holographic Imaging –Comparison between Uniform and Nonuniform Spacings of Frequency Arrays
Authors: Miyashita Toyokatsu
Published: March 2014

This paper discusses the range ambiguities of a synthetic aperture multifrequency holographic imaging with long waves, e.g., ultrasound and microwave. It is shown that the range ambiguities are satisfactorily reduced if nonuniformly spaced frequency arrays are used in place of conventional uniformly spaced frequency arrays, comparing images reconstructed from ultrasound holographic data obtained by experiments using both kinds of arrays.
Studies on the Ring Type Magnetic Ultrasonic Vibration Detector
Authors: Tsujino Jiromaru
Published: March 2014

Ring type magnetic ultrasonic vibration detectors suitable for measuring ultrasonic longitudinal vibration systems are proposed and studied. They consist of detecting coils, permanent magnetic thin disks or strips and foam rubber supporters. These detectors are most suitable for measuring high power ultrasonic vibration systems, and have superior linearity and good stability. Output voltage is proportional to vibration velocity or vibration stress amplitude of a vibration system. The position of maximum detector output voltage can be shifted along the vibration system by rearrangement of the detector.
Sound Field between Two Parallel Reflection Plates by Vibration Plate with Stripes Mode
Authors: Ito Youichi , Kawamura Masatada
Published: March 2014

When a reflection plate is placed parallel at a suitable distance from a vibration plate with the stripes mode which radiates plane waves in the air, the acoustic load upon the vibration plate increases, and therefore electric power supplied to the ultrasonic source increases under a constant vibration amplitude.
Making use of this relation, a rectangular vessel with a high intensity ultrasound field can be designed, the dimensions of which are easily determined by the wavelength of the sound wave and bending wave in the plate.
Light Diffraction by Short Ultrasonic Pulses
Authors: Negishi Katsuo
Published: March 2014

Numerical analysis of light diffraction by short ultrasonic pulses has been performed using FFT. Two kinds of ultrasonic waveforms are analyzed: (1) pulsed sine wave with a square envelope, (2) that with an exponential envelope. Asymmetry in diffraction spectra, displacement of intensity peak in each order, and effect of ultrasonic polarity on spectral distribution are described.
High-Q Ultrasonic Resonator for Absorption Measurements in Liquids
Authors: Naito Yasushi , Choi Pak-Kon , Takagi Kenshiro
Published: March 2014

A new resonator method for measuring the ultrasonic absorption in liquids at low frequency range below 1 MHz is proposed. The resonator is composed of a quartz transducer and a concave reflector with a very slight curvature, which successfully reduces the diffraction effect at low frequencies. The standing wave in the resonator filled with the test liquid is optically detected and the resonance spectrum yields the ultrasonic absorption. The usefulness of this apparatus is demonstrated by measuring absorption in water and benzene over the frequency range 300 kHz–10 MHz.
Ultrasonic Measurement of Bacteriorhodopsin in Purple Membrane
Authors: Jippo Toshiyo , Kataoka Ryoichi , Mitaku Shigeki , Ikegami Akira
Published: March 2014

Ultrasonic properties of bacteriorhodopsin which is a light-driven proton pump in purple membrane were studied in the dark as well as under illumination. A xenon lamp was added as a light source to a previously developed ultrasonic resonator. Bacteriorhodopsin showed no ultrasonic relaxation in the frequency range of a few megahertz. The adiabatic bulk modulus of bacteriorhodopsin estimated from ultrasonic velocity was about 4×1010 dyn/cm2 in the dark. When bacteriorhodopsin was illuminated, the ultrasonic velocity increased significantly in proportion to the intensity of light.