Physical mechanism of Ge doping enhanced Ruddlesden-Popper structure quasi-2D Sr<sub>3</sub>Sn<sub>2</sub>O<sub>7</sub> ceramic hybrid improper ferroelectricity
Authors: Xiao Zhi-Feng , Wang Shou-Yu , Dai Ya-Ting , Kang Xin-Miao , Zhang Zhen-Hua , Liu Wei-Fang ,   College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, China,   Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, China
Published: May 2024

Hybrid improper ferroelectricity with quasi-two-dimensional (quasi-2D) structure has attracted much attention recently due to its great potential in realizing strong magnetoelectric coupling and room-temperature multiferroicity in a single phase. However, recent studies show that there appears high coercive field and low remnant polarization in ceramics, which severely hinders the applications of this material. In this work, high-quality Sr<sub>3</sub>Sn<sub>2</sub>O<sub>7</sub> and Sr<sub>3</sub>Sn<sub>1.99</sub>Ge<sub>0.01</sub>O<sub>7</sub> ceramics with a Ruddlesden-Popper (R-P) structure are successfully prepared, and their crystal structures and electrical properties are investigated in detail. It is found that the Sr<sub>3</sub>Sn<sub>2</sub>O<sub>7</sub> ceramic exhibits a lower coercive field that is close to that of Sr<sub>3</sub>Sn<sub>2</sub>O<sub>7</sub> single crystal. Moreover, via a small amount of Ge doping, the polarization reaches 0.34 μC/cm<sup>2</sup> for Sr<sub>3</sub>Sn<sub>2</sub>O<sub>7</sub> and 0.61 μC/cm<sup>2</sup> for Sr<sub>3</sub>Sn<sub>1.99</sub>Ge<sub>0.01</sub>O<sub>7</sub>. Combining crystal lattice dynamic studies, we analyze the Raman and infrared responses of the samples, showing the information about the tilting and rotation of the oxygen octahedra in the samples. The improved ferroelectricity after doping may be attributed to the increased amplitude of the tilt mode and the reduced amplitude of rotation mode. Besides, the enhanced ferroelectric properties through Ge doping and its mechanism are further investigated by the Berry phase approach and the Born effective charge method. Furthermore, via the UV-visible spectra, the optical bandgap is determined to be 3.91 eV for Sr<sub>3</sub>Sn<sub>2</sub>O<sub>7</sub> ceramic and 3.95 eV for Sr<sub>3</sub>Sn<sub>1.99</sub>Ge<sub>0.01</sub>O<sub>7</sub> ceramic. Using the Becke-Johnson potential combined with the local density approximation correlation, the bandgap is calculated and is found to be in close agreement with the experimental result. And the electronic excitations can be assigned to the charge transfer excitation from O 2p to Sn 5s (Ge 4s). The effects of Ge doping on the ability of Sr<sub>3</sub>Sn<sub>2</sub>O<sub>7</sub> to gain and lose electrons and the bonding strength of Sn-O bond are analyzed via two-dimensional charge density difference. In conclusion, this study provides insights into the synthesis method and modulation of ferroelectric properties of hybrid improper ferroelectrics Sr<sub>3</sub>Sn<sub>2</sub>O<sub>7</sub>, potentially facilitating their widespread applications in various capacitors and non-volatile memory devices.