MODELING OF THE PROCESS OF ELECTROMAGNETIC DAMAGE OF SEMICONDUCTING STRUCTURES OF RADIO ELECTRONIC EQUIPMENT OF TELECOMMUNICATION SYSTEMS
Authors:   National academy of hte National Guard of Ukraine, Fyk Oleksandr , Nazarenko Oleh ,   National Academy of the National Guard of Ukraine, Sm�r�nska Nataliia ,   Naval Institute of the National University "Odessa Maritime Academy", Hlushchenko Mykola ,   National academy of the National Guard of Ukraine
Published: January 2025

In the war between Ukraine and Russia, electromagnetic means of influence on telecommunication systems and military and civilian communication systems are used. The most severe operating conditions of telecommunication system elements are thermal conditions, when degradation effects associated with exceeding thermal tolerances already occur. That is, modes when irreversible or catastrophic failures of telecommunication systems occur in semiconductor structures. Today, one of the most urgent tasks in the design of fault tolerance of telecommunication systems, including military ones, is to study models of the thermal mechanism of degradation of radio elements and components. In this article, we model the process of damage to semiconductor structures when current pulses of various shapes pass through. The occurrence of thermal loads is usually associated with a violation of the electrical modes of operation of semiconductor elements and components of telecommunication systems that are most susceptible to external destabilizing factors. At the same time, degradation effects can occur as a result of short-term pulsed electrical loads. In recent years, the tightening of the requirements for ensuring the thermal conditions of semiconductor devices has been caused by miniaturization and a high degree of integration of elements (especially digital ones), the transition to submicron technologies, the growth of broadband and computer technology, the speed of telecommunications systems, etc. The paper derives expressions for estimating the amount of allocated power under certain conditions of current pulse impact on complex semiconductor structures of telecommunication systems. Thus, the linear thermal model describes the time dependence of temperature and damage power quite accurately. The criterion parameters are the W-B constant and the thermal relaxation time of the semiconductor crystal ?T, which depend on the macroscopic characteristics of the semiconductor (heat capacity, thermal conductivity, density). With a reduction in the duration of exposure, the nature of the time dependence of the power P�(t) is determined by a decrease in the effective size of the energy release region, which leads to a decrease in the limiting damage energy, while, during adiabatic heating, the temperature increase is observed at any pulse shape. It is shown that at the same energy levels, impulsive loads are more dangerous for the functioning of telecommunication systems than quasi-stationary ones. The physical picture of the defect formation processes in semiconductor devices under the influence of ultrashort duration overload pulses can be clarified within the framework of the theory of electrical processes in semiconductors, the characteristic times of which are much shorter than the thermal relaxation time ?T. Further refinement of the scenario of the thermal process of defect formation is based on the analysis of the nonlinear thermal conductivity equation, taking into account the temperature dependence of the thermal and electrophysical parameters of the semiconductor.