bluuebunny/crossref_metadata_2025 huggingface dataset:
Electrical Transport in Thick Film (Cermet) Resistors
Authors: Prudenziati Maria
Published: June 2007

Though for many decades have we had thick‐film resistors (TFRs) with good electrical properties, no well established model for describing their conduction mechanisms has been achieved. However the efforts of some research groups in U.S.A. and Europe in the last years have had success in improving our knowledge of the microstructure and of a large spectrum of electrical properties of TFRs. The available information narrows the field of possibilities for conduction mechanisms in TFRs. Though no conclusive assessment is yet possible, some lines for further progress can be precisely delineated.
Towards a More Thorough Paste Specification
Authors: Barnwell Peter
Published: June 2007

A thorough specification of thick film resistor pastes is of vital importance to modern production methods. Proposals are, therefore, made to revise suitable specification with particular reference to resistance values.
Temperature Verification of Hybrid Microelectronic Circuit Design
Authors: Širbegović Sedat , Mazalica Milan , Krčmar Ratko
Published: June 2007

The paper includes temperature measurement results on hybrid microelectronic circuit surfaces carried out by infrared microscope with special attention to critical temperatures (hot spots) which may require hybrid microelectronic circuit redesign. Critical component reliability analysis, as well as the need for replacement with more reliable components is considered. The principle for hybrid microelectronic design verification suggested.

The paper is the result of longterm efforts at the Rudi Čajavec Factory in Banja Luka, where we have been investigating the possibilities for very reliable hybrid microelectronic circuit design.
Current Noise in Thick and Thin Film Resistors
Authors: Demolder S. , Van Calster A. , Vandendriessche M.
Published: June 2007

In this paper a sensitive measuring circuit is described for the measurement of current noise on high quality thin and thick film resistors. Measured data on resistors are presented and analysed.
An Electromyographically Controlled Elbow Locking Mechanism for an Upper Limb Prosthesis
Authors: Law H. T. , Hewson J. J.
Published: June 2007

The purpose of the elbow lock incorporated in an artificial arm is discussed and the difficulties encountered in the operation of purely mechanical devices are outlined. An electrically driven locking mechanism has been built which is controlled by the electromyogram (e.m.g.) of the surviving muscles in the upper arm. Hybrid technology is ideally suited to the construction of the associated electronic circuitry and to many similar applications now being considered in attempts to improve the performance of upper‐limb prostheses.
Fine Lines in a Three Dimensional Interconnect
Authors: Scarlett J. A.
Published: June 2007

The techniques for the generation of fine lines on rigid and flexible printed circuit boards are reviewed, and it is shown how the tracking on the interconnect can be made to match the requirements of chip carriers, TAB chips or beam leaded or wire bonded chips directly mounted.

The use of fine line techniques on planar substrates can be adapted to provide a low cost, high density interconnect which offers a truly three dimensional connection capability without the use of a “back wiring panel”. Such a three dimensional interconnect can offer opportunities for improvement in the removal of heat from high dissipation chips, thus offering significantly increased reliability.
Wire Laying Methods as an Alternative to Multilayer PCB′s
Authors: Messner G. , Plonski P. , Martens A.
Published: June 2007

The rapid growth of integrated circuit technology, culminating in VLSI circuits, is responsible for the proliferation of new, surface mountable device packages with large numbers of input‐output terminals. Conventional printed circuit or multilayer techniques have been driven to the technological edge in the effort to interconnect these new types of packages. Because the etched conductors can be replaced with fine, insulated wires, automated high density discrete wiring techniques can provide easier high density interconnections and with shorter turn‐around times. Among the dozen or so presently available discrete wiring techniques, the fastest growing is Multiwire®. Multiwire is a computer based design and manufacturing system, where special machines are precisely laying down polyimide insulated
wires over adhesive coated substrates having etched power and ground planes. The finished boards exhibit microstrip characteristics, providing impedance control for high speed applications. The manufacturing process and Multiwire board performance capabilities are described in this paper.
Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films
Authors: Halder N. C. , Snyder R. J.
Published: June 2007

Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10)
have been produced on alumina substrates. The temperature coefficient of resistivity
(TCR) of these films has been measured for different particle size and concentration (weight
percentage) of the conductor particles. The TCR was found to be a function of temperature in all the films included here. From the measured values of negative TCR the tunneling parameter α and
hopping parameter β were determined. These results suggest that hopping is important for the low concentration
films. For films with positive TCR only parameter α could be determined. The parameter
α increased but the parameter β decreased with temperature for the present films.
Thick‐Film Non‐Reciprocal Ferrite Elements and Gunn Hybrid Oscillators in Modified Thick‐Film Technology
Authors: Gondek Janusz J. , Koprowski Jan , Wójcicki Marek A.
Published: June 2007

In this paper are presented design and performance data on microwave Y–circulators and Gunn oscillators produced in thick‐film technology. Y–circulators have been designed for central frequencies of 3, 5, and 10 GHz with a satisfactory accuracy. New Polish made ferrite substrates, G–32, G–84 K, and G–175 have been used.

The Gunn oscillator was designed and corrected to the resonant frequencies 3, 5 and 6 GHz based on the integrated package diodes CXYP – 43 A and BXYP – 45 C (made in Poland). The results of the investigations are presented in tabular and graphical form.
Evaporation Characteristics of Electron Beam Gun Heated Sources
Authors: Baynes Paul C. , Nagarajan T.
Published: June 2007

Exact expressions for the thickness profile of thin films deposited using electron beam gun heated sources are obtained in terms of the source‐substrate geometry. Calculations based on conical and cylindrical indentations show the latter to be more realistic. Self‐masking effects at the source are taken into account.
Model for Reliability Prediction of Thick Film Resistors
Authors: Pranchov R. B. , Campbell D. S.
Published: June 2007

A model for time‐to‐failure prediction based on component parameter drift is described. The idea for creation of this model is based on the influence of time‐dependent random and non random factors on the distribution of the random variable.

The reliability interpretation of the data from thick film resistor ageing tests has been completed with the model developed. Two different drift functions are described for two ruthenium‐based thick film methods with equal resistivity – 10Ω/square. The values of the functional parameters
depend strongly on the storage test temperature. Mean time‐to‐failure decreases approximately 4 times with an increase of storage temperature of 20 deg. C.
Noise Investigations on Thick Film Resistors
Authors: Ambrozy A. , Wollitzer G.
Published: June 2007

Compared to metallic thin films or wires thick film resistors have a rather complex structure. Transition metal oxide particles are embedded into a glassy matrix. The resistivity depends heavily on the percentage of the constituents in the composition. It is believed that the main part of the resistance stems from the touching areas of conductive grains and that the conduction is by tunneling.

To give a better insight a noise spectrum analysis has been developed. A DC current is passed through the sample to be measured. The output noise voltage is analyzed between 1.6 Hz and 25 kHz using a commercial third‐octave analyser.

Results are given of an experiment in which the glassy matrix of thick film resistors was etched away step by step and the noise was measured vs. the number of etching steps.
Electron Tunneling and Hopping Possibilites in RuO2 Thick Films
Authors: Halder N. C.
Published: June 2007

It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle‐to‐particle conduction, (ii) electron tunneling, and (iii) the phononassisted hopping. Equations for activation energies are derived for the temperature minimum of the resistance with and without hopping. New equations for TCR are suggested. Some extensive calculations of TCR and activation energy have been made for RuO2 thick film resistors, the results of which agree well with available experimental measurements.
Active Trimming of Hybrid Integrated Circuits
Authors: Németh P. , Krémer P.
Published: June 2007

One of the more important fields of the microelectronics industry is the manufacturing of hybrid integrated circuits.

An important part of the manufacturing process is concerned with the trimming of the hybrid integratedl circuits. This article deals with the basic principles of active trimming and introduces a microprocessor controlled trimming machine. By comparing active trimming with passive techniques, it can be shown that the active system has some advantages. This article outlines these advantages.
On Experimental Data of the TCR of TFRs and Their Relation toTheoretical Models of Conduction Mechanism
Authors: Storbeck I. , Wolf M.
Published: June 2007

Any theory of electrical conduction in TFRs encounters mainly two problems: (i) explanation of the dependence of R□ on properties of conducting component (volume fraction, grain size, resistivity), (ii) explanation of the temperature dependence of R□ taking into account (i). In order to achieve this one has to fit some microscopic parameters to experimental R□‐and TCR‐values, and to check if
they are reasonable or not. The aim of the following discussion is to show, that such a fitting by means of experimental TCR‐values is not correct. This is due to the fact that TCR‐behaviour, as is well known, is determined also by the dependence of resistivity on strain. But any theoretical model neglects strains, also those who are induced by thermal strains. By means of published experiments concerning the strain dependence of resistance, the magnitude is estimated by which the TCR‐values have to be corrected for the described fit.
Reproducibility of Properties of SnOx Thin Films Prepared by Reactive Sputtering
Authors: Beensh-Marchwicka Grazyna , Krol-Stepniewska Lubomila
Published: June 2007

The preparation of tin dioxide films by low energy reactive sputtering of tin and tin‐antimony (1‐10% wt. Sb) in an oxygen – argon atmosphere is described. The dependences of oxygen content in the range from 0 to 50%, target compositions, substrate temperature of 300 K‐573 K on minimum resistivity at satisfactory transmittance and on reproducibility are discussed. The correlation between the electrical and optical
properties and the microstructure of the films is shown.
Electrochemical Migration in Thick‐Film IC‐S
Authors: Ripka Gabor , Harsanyi Gabor
Published: June 2007

The phenomenon of silver migration in conductor‐insulator systems is well known, but it is less known that several other metals can exhibit migration. This paper tries to give a short summary of the phenomenon as applied to thick‐film circuits.

Tests have been made on different conductors used in thick‐film circuits. The dendrites formed by electrochemical migration were examined by scanning electron microscope, and also by wavelength‐dispersive analysis of the emitted x‐rays. By obtaining secondary and back‐scattered electron images, x‐ray maps and profiles, it can be determined which components cause migration in the conductor in question.

Photos are presented illustrating the results.

Thermal Humidity Bias test was also performed in controlled environmental chambers in order to get a comparison between different thick film systems.
Stability Observations and Surface Analysis of Air Fired Nickel Thick Film Conductors
Authors: Pranchov R. B. , Campbell D. S.
Published: June 2007

The results from an investigation of the properties of air fired Nickel thick film produced with conductive paste ESL 2554 on 96% Al2O3 substrates are described. The analysis of the possible causes of instability
of this thick film material has been done using the methods of surface analysis. The picture of the film surface structure obtained as a result of surface analysis shows a non‐isotropic distribution of the metal and glass phase. For a firing peak temperature of 650℃ there is little nickel present at the film surface, and this could be the main cause of the high instability and low adhesion observed. To obtain a stable film the maximum firing peak temperature has been established at 580℃. This has been confirmed by comparing the surface analysis results from films prepared at 650℃ and 580℃ peak temperatures.

The surface analysis of the substrate shows the presence of Silicon which may be considered as another possible cause of film instability.
Electrical Properties of RF Sputtered NiCr Thin Film Resistors With Cu Contacts
Authors: Nahar R. K. , Devashrayee N. M.
Published: June 2007

Investigations on RF sputtered NiCr thin film resistors, fabricated using Cu as conductor metallization, were made. The contact resistance characteristics, resistor film characteristics and TCR of the resistors were measured. The effect of heat treatment on the resistor characteristics was studied. A suitable annealing cycle for the resistor stabilization was studied. A suitable annealing cycle for the resistor stabilization was obtained. The effect of passivation by a thin quartz film on the resistor properties was also examined. The results are presented and discussed in this paper.
Electrical Behaviour of Langmuir Films: A Review, Part I
Authors: Agarwal V. K.
Published: June 2007

The electrical behaviour of thin films obtained by a variety of processes, e.g. thermal evaporation in vacuum, have been extensively studied. However, the study of organic mono‐ and multilayer films obtained by the
Blodgett–Langmuir technique (commonly referred to as Langmuir films) has gained considerable momentum only during the past decades. Unlike evaporated films, the striking features of these organic films are their controllable
thicknesses down to one monolayer (~ 25 Å) and the possibility of obtaining them free from holes and conducting imperfections. The aim of this paper is to describe the film deposition techniques, some of the properties of the films so obtained and to review their electrical behaviour. It is also intended to make this review a comprehensive
and up‐to‐date source of information for those who are either already engaged in this field or are planning to make
Langmuir films the subject for future investigations.

In this survey, emphasis is put on problems worth further study to obtain greater insight into the basic properties of these films. Further, since they possess some interesting electrical properties, this paper may prove useful in the assessment of our depth of knowledge about them and in reducing the existing gap between basic research and technological applications. Thus their potential usefulness in the development of devices is also discussed.

The survey is divided into two parts. Part I is concerned with deposition techniques, the physical properties of
Langmuir films and certain electrical properties, namely dielectric behaviour and electrical conduction phenomena.
Part II, which will appear in the next issue, will be concerned with electrical breakdown behaviour, voltage
induced changes in electrical behaviour (forming) and ionic transport phenomena in the films and will finish with
suggestions as to future trends in work with such films together with a summary of possible applications.

To assist the reader, the two parts have been numbered consecutively with regard to sections of the text, figures and references.
Heat Dissipation and Ripple Current Rating in Electrolytic Capacitors
Authors: Hayatee F. G.
Published: June 2007

The ripple current rating in electrolytic capacitors is limited by the maximum allowable temperature rise inside the
capacitor. The temperature rise is determined by the I2 R losses inside the capacitor and the efficiency of heat flow
from the interior to the surrounding. The ripple current rating can be extended by either reducing the tan δ of the
capacitor or by increasing the efficiency of heat flow to ambient.

The heat flow is determined by the thermal characteristics of the capacitor surface and thermal conductivity of
the medium separating the capacitor winding from the surrounding.

In this article a mathematical analysis for the heat flow in capacitors is given. The effects of various parameters
are examined and methods of extending the ripple current rating are discussed.
Matched Transformers for Synchro and Resolver Applications
Authors: Pratt M.
Published: June 2007

Transformer pairs in Scott Tee and similar transformer arrangements have been used for some considerable time in
precision synchro/resolver angular measuring gear and in synchro to digital converters. Literature on the subject of
transformer requirements is, however, scant or non‐existent. 1,2 This paper describes the basic principle of
transformer operation and develops a design approach which, although aimed primarily at the minimisation of
transformer hardware size, still maintains the required level of angular accuracy. The method applies to transformers
utilised in mobile systems, particularly transformer arrangements working under loaded conditions.
Production of Resistors by Arc Plasma Spraying
Authors: Smyth R. T. , Anderson J. C.
Published: June 2007

Arc plasma spraying (APS) is an accepted method of producing coatings for many engineering applications. The
wide range of materials that can be used to form the thick film coatings make this technique interesting as an
alternative method of producing electrical components and circuits.

The manufacturing procedure is outlined and the potential advantages of this method of making thick film
resistors are listed.

The effect on the physical and electrical properties of the films produced by variation of the arc plasma gun
current, gas flow rate and powder particle size are reported together with the effect of varying gun/substrate
distance and the topography of the substrate surface.

It is shown that using a mixture of NiO and Fe3O4 powders with a particle size range of 1–20 μm it is possible
to produce films on a glass substrate with sheet resistivities from 5–500 Ω/sq; temperature coefficients of resistance
vary from +20 to −8 × 10−4 per ℃, depending on resistor composition and film thickness.

The results given for a 10,000 hour life test carried out at 150℃ in air show a mean charge in resistance of ~−5%.

It is concluded that APS offers a viable method of producing thick film resistors and conductors on low cost
substrates.
On the Damage to Metallized Film Capacitors Caused by ElectricalDischarges
Authors: Burgess J. W. , Bilson R. T. , Jackson N. F.
Published: June 2007

High voltage operation of metallized film capacitors leads to electrical spark breakdown in pockets of gas trapped
within the sealed capacitor unit. A simple picture of gas discharge processes in the capacitor is used to identify the
role played by electric discharges in the deterioration and ultimate failure of capacitors under accelerated life test.
Failure Mechanisms in Wet Tantalum Capacitors
Authors: Hayward D.
Published: June 2007

The wet tantalum capacitor is well established in both power supply smoothing and timing applications and has a well proven high reliability. This paper reviews the mechanisms of the possible failures arising from mis‐application or over‐stressing. The effect of over voltage on the anodic oxide is considered and the influence of cathode structure on reverse voltage and ripple current capability is discussed. The silver cathode allows migration of silver ions through the electrolyte under appropriate conditions and hence produces a failure mechanism not present in the tantalum cathode device. The life of a wet tantalum unit is eventually limited by loss of water vapour leading to
open‐circuit. Results are presented for button style capacitors which suggest that this is in fact not a practical
limitation.
Silver‐Ruthenium Dioxide Contacts
Authors: Pedder D. J.
Published: June 2007

This paper describes the development of a novel electrical contact material, silver‐ruthenium oxide, for use in light duty switching applications where low contact resistance values must be maintained. Material fabrication and
contact resistance behaviour after exposure to a tarnishing atmosphere are described. An explanation for the low
contact resistance values obtained for silver‐ruthenium dioxide in comparison with pure silver is offered.
Field Assisted Glass Sealing
Authors: Wallis George
Published: June 2007

The paper reviews the experimental, theoretical and applications work by several authors on a glass sealing
technique which was announced five years ago. In the process, an electrostatic field is utilized to promote bonding
at relatively low temperatures. The process variables and seal properties are described in detail. A discussion is
presented of the mechanisms which are believed to play a role in bond formation. As an example of the utility of
the technique, its highly successful application to the mounting of strain gauges is described.
Etude de la Conduction Ionique du βPbF2
Authors: Gianduzzo J. C. , Pistre J. , Salardenne J.
Published: June 2007

Measurements were made with sintered samples in vacuum at 10−5 torr. Voltages of frequencies varying between
0.1 and 5 × 104 Hz at different temperatures (300 to 500 K) were used. The impedance diagrams show two regions.

1) a circular diagram in the high frequency region.

2) a poorly defined diagram in the lower frequency region.

The different temperatures yield circles centered on a straight line making an angle απ/2 = 20° with the real axis.

The loss factor (Tan δ) variation as a function of log ω shows a relaxation peak clearly different when
compared to the one obtained by Debye′s mechanism. These two effects are due to a certain ion mobility
dispersion. The curve shape is affected by the applied voltage only in the low frequency region, for which results
may be explained by invoking a space charge effect due to partially blocking electrodes, whereas the high frequency phenomena represent the material′s intrinsic conduction.

By extrapolating the impedance diagram, the sample dc conductivity σ was determined. The measured activation energy was found equal to 0.47 eV.

Les mesures ont été effectuées sous un vide de 10−5 Torr sur des échantillons de βPbF2 préparés sous forme de
pastilles frittées. Les résultats se rapportent à une étude faite en courant alternatif dans une gamme de fréquences
allant de 0,1 à 5 × 104 Hz pour des températures comprises entre 300 et 500 K. Le tracé des diagrammes d′impédance fait apparaître deux parties:

1) aux fréquences les plus élevées on obtient un arc de cercle.

2) aux basses fréquences la partie circulaire se prolonge en une courbe mal définie.

Les cercles obtenus pour différentes températures sont centrés sur une droite faisant un angle απ/2 = 20° avec l′axe réel. La variation du facteur de pertes tgδ en fonction de log ω fait apparaître un pic de relaxation dont la forme diffère notablement de celle qui correspondrait à un mécanisme de Debye. La forme de la courbe n′est
affectée par l′amplitude de la tension appliquée que dans la région des basses fréquences.

Une explication qualitative de ces résultats est donnée, basée sur la création d′une charge d′espace à basse fréquence et sur une certaine dispersion de la mobilité des ions participant à la conduction. Par extrapolation du
diagramme d′impédance la conductivité en continu σ de l′échantillon a pu être déterminée. La mesure de son énergie
d′activation a été trouvée égale à 0,47 eV.
State of the Art of Thin Film Components
Authors: Heywang H. , Schauer A.
Published: June 2007

The main reasons for the development of thin film technology are miniaturisation, reliability and high frequency
applications. A comparison with conventional components, and with the demands of system engineers shows that
the thin film resistor problem is solved and that there are thin film capacitors for many applications, whereas coils
of only small values and low Q can be made. As the distances between thin film circuit elements can be extremely
small, low conductor resistance between components is possible. The inherent advantages of thin film technology
are good reliability because of fewer connections, the possibility of functional trimming, small TCR and TCC
variation in a circuit, and TCR‐TCC balancing. Furthermore parasitic effects can be well controlled, distributed
elements realized and large scale integration carried out.
Nonlinear Distortion of the Fiber Optic Microphone
Authors: Abuelma′atti Muhammad Taher
Published: June 2007

Analytical expressions are obtained for predicting the harmonic and intermodulation
performance of the fiber optic microphone. These expressions are in terms of the ordinary
Bessel functions with arguments dependent on the amplitudes of the acoustical exciting
signal.
New Quartz Crystal Oscillators Using the Current‐Feedback Operational Amplifier
Authors: Abuelma′atti Muhammad Taher , Al-Ghazwani Ahmad
Published: June 2007

New crystal oscillators using the current‐feedback operational‐amplifier (CFOA) are
presented. Each circuit uses one CFOA, a crystal and, at most, five externally connected
passive elements. Experimental results are included.
Design and Realization a New Thermoelectric Sensor, Application
Authors: Hachami K. , Moussaid D. , Rahmoun M. , El Hassani A.
Published: June 2007

The present paper deals with design and realization of a New thermoelectric sensor
adapted to conceive a circuit breaker, using the thermoelectric effects (Joule, Peltier and
Seebeck). The sensor includes two printed circuits. The first is constituted of two resistive
tracks of constantan, it is the transmitting circuit. The second, a planar thermoelectric
circuit acting as a receiver, is constituted of many plated differential thermocouples. The
transmitting circuit is placed on the top surface of the receiver circuit so that the resistive
tracks are placed on the levels of thermoelectric junctions. The measuring method
consists to passing electrical currents through the resistive tracks in order to generate
temperature gradients between junction points of the bimetallic circuit. Then the resulting
temperature differences between junction points is directly converted into a proportional
Seebeck voltage. As an application, the sensor is adapted to realize a differential
circuit‐breaker with a low difference current.
Extraction of RDS(ON) of n‐Channel Power MOSFET by Numerical Simulation Model
Authors: Salame C. -T.
Published: June 2007

In this paper we present an original method for n‐channel power MOSFET resistance
extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor and the Body‐Drain junction are realized for the experimental determination and the extraction (by numerical analysis) of RDS(ON), respectively. Values of this resistance are extracted for different positive bias applied between the gate and the source (+VGS). Physicals parameters obtained from the numerical analysis are inspected, and results shows that the numerically analysed junction characteristic is in very good correlation with the electrical measurement
A Novel Coherent Digital Sweep Oscillator with Extremely Low Sweep Rates and Harmonic Distortion
Authors: Al-Ibrahim (Jarrah) M. M.
Published: June 2007

A novel technique to efficiently increase the resolution of coherent digital sweep
oscillators based on look‐up‐table (LUT) methods is proposed. The increase in
resolution measured in terms of sweep rates is achieved while maintaining very low
levels of spurious harmonic distortion. The proposed technique increases the LUT length
to a level at which the spurious harmonic distortion is negligible. The proposed
technique is based on partitioning the address register into three sets and dividing the
available LUT length into five smaller tables addressed according to the content of the
three address register sets. The proposed technique is simulated and its performance is
compared with that of the known sweep oscillators. The simulation results show that the
proposed technique is superior to all sweep oscillators reported in the literature.
Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH
Authors: Tellier C. R. , Leblois T. G. , Charbonnieras A.
Published: June 2007

This paper deals with the anisotropic chemical etching of various silicon plates etched in
EDP. Changes with orientation in geometrical features of etched surface and in the
etching shape of starting circular sections are systematically investigated. These etching
shapes are compared with shapes produced by etching in KOH and TMAH solutions;
This experimental study allows us to determine the dissolution slowness surface for the
EDP solution and to investigate the real influence of the etchant on two dimensional and
three dimensional etching shapes.
Voltage‐Controlled Small Signal Analysis of Real Space Transfer Transistor
Authors: Yarn K. F. , Hwang J. Y.
Published: June 2007

The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage‐controlled mode model, called parameter extraction, to describe the performance of RST transistors at high frequency range. Besides, we also employ the value‐determined model to simulate the microwave characteristics of RST and the theoretical and experimental results are compared. The
influence of variables of RF performance is analyzed and theoretical results show that the cut‐off frequency (fT)
is mainly affected by the leakage resistances and the dimension of metal contact, but the maximum available gain frequencyfmax, is dependent on contact resistances.
Application of Piezoceramics in Relays
Authors: Guntersdorfer M. , Kleinschmidt P. , Veith R.
Published: June 2007

For the application of a piezoceramic as a d.c. electromechanical transducer to drive relay contacts the mechanical
output energy is the most important feature. The energy has been calculated as a function of the applied electric field
strength for longitudinal and transverse operation. For a typical ceramic material maximum values of
53 mWs/cm3 (long.) and 21 mWs/cm3 (trans.) are obtained, taking into account large
signal behaviour. Conventional bending elements, which are used to achieve higher deflections at lower voltages,
show transformation losses caused by inhomogeneous stress distribution, energy storage in the metal part and
inactive bending modes. On the other hand by utilizing the effects of transverse clamping and stiffness compensation,
the output energy can be increased by more than one decade as experimentally verified with some special types of highly
efficient bending elements. A delayed action relay showing low temperature and shock sensitivity has been tested over more
than 10 000 switching cycles.
Electroless Plating – Its Applications in Resistor Technology
Authors: Dearden J.
Published: June 2007

Electroless processes for the deposition of metal films onto insulators have been known for many years. Various aspects of this technology have been applied in the field of resistor technology leading to improved performance of existing resistors and the evaluation of new resistors with novel characteristics.

The applications of electroless nickel as a readily solderable, completely ohmic contact for tin oxide resistors is described.

Copper oxide layers produced from oxidised electroless copper are shown to improve the thermal stability of tin oxide resistors.

A range of electroless high precision metal film resistors from a fraction of an ohm to 100 kohm per square and from a few millimetres in length to over 1 metre is shown to be feasible. This technology has been applied to the manufacture of thin film circuits.

The outstanding thermal stability of the electroless nickel‐boron films and their temperature coefficient of resistance indicates a potential application in the field of temperature sensors.

The ability to produce “weightless” films on Mylar sheet at 10 Gohm per square is considered to be a solution to the charge distribution requirement for electrostatic loudspeakers.
Conduction Processes in Thick Film Resistors. Part I
Authors: Ansell M. P.
Published: June 2007

The structures of three families of thick film resistors have been investigated by scanning electron microscopy and electron probe micro‐analysis. The two principal components of the resistive glazes, that is the conducting pigment and the glassy binder, have been identified in each case. The pigments were found to be simple or ternary oxides of the Pt transition metal group and Pd/PdO/Ag alloys. The glassy binders were based on lead borosilicate glasses.

A model for the electronic conduction processes through the glass and pigments is proposed on the basis of the observed physical structures, the measured electrical properties of resistors and the properties of the component resistor materials.

Part I of the total paper is concerned with identifying the phases in various Thick Film Resistors and part II considers the conduction processes that are appropriate.
A Program to Predict the Resistance of Trimmed Film Resistors
Authors: Moran P. L. , Maiti C. K.
Published: June 2007

A program that numerically models laser trimmed film resistors is described. From this model it is
possible to predict the resistance, sensitivity of resistance to trim cuts and the magnitude of local “hot spots”.
An example of the use of the program is given.
The Electrical Resistivity of Monocrystalline Films Deduced From Derivation of the Mayadas‐Shatzkes Equations
Authors: Tellier C. R. , Tosser A. J.
Published: June 2007

The theoretical expression deduced by Mola and Heras from the Mayadas–Shatzkes model of monocrystalline
thin film resistivity is approximated assuming that the Sommerfeld relation is valid and introducing corrections to the
Matthiessen′s rule.

The approximate expression of kρf /ρ0 deviates
from less than 6% in the 0.01–2 k‐range, 0–0.5 p‐range
and 0.1–0.62 r‐range.
The Determination of the Thickness of Anodic Al2O3 Film
Authors: Van Schuur R.
Published: June 2007

To compare the properties of anodized aluminium oxide layers an easy thickness determination method is wanted. Crevecoeur and De Wit used a method expressing the thickness in terms of peak voltages obtained by forming again after annealing. The aim of the work described here is to relate the value of the peak voltage to the thickness of the layer measured by ellipsometry.

On specimens formed in an aqueous solution of b oric acid and ammonium hydroxide the following relation is found between the thickness d (nm) and peak voltage Vp (volt):d = 1.020 Vp + (0.00044 ± 0.00011) . On specimens formed in a solution of ammonium pentaborate in ethylene glycol the squared Vp term is of a lower value. however when Vp is less than 150 V the above relation holds for layers formed in both electrolytes, the systematic error then being less than 1%.
The Production of Complex Thin Film Circuits
Authors: Needham V.
Published: June 2007

In‐house manufactured thin film circuits are used by Lucas Aerospace in gas turbine engine fuel control systems where stability and reliability in a harsh environment are required.

The construction of a complex active thin film circuit is reviewed with emphasis on some less obvious aspects of production. Where component attachment and engineering techniques used are thought to be of special interest a more detailed explanation is given.

As is normal in the avionics industry a high degree of system integrity is required so that quality control is essential. Therefore, the role of Quality Engineering in the production plan is described.
Electroforming, Switching and Memory Effects in Oxide Thin Films
Authors: Oxley D. P.
Published: June 2007

Experiments on electroforming of Metal‐Oxide‐Metal thin film sandwiches which have been electroformed to exhibit voltage‐controlled negative resistance are summarized and an outline of recent evidence in favour of localized or filamentary conduction is given.

A similar review is given of the experiments on oxide sandwich structures which have been formed to exhibit current‐controlled negative resistance or threshold switching and memory switching. Current theories are reviewed briefly. Finally oxide memory devices are compared with those based upon the chalcogenide glasses.
Semiconductor Materials for Future Display Devices
Authors: Tansley T. L. , Owen S. J. T.
Published: June 2007

The large majority of solid state lamps currently available take advantage of the phenomenon of electroluminescent
recombination at forward biased p–n junctions (homojunctions) in III–V compound semiconductors or related
derivatives (GaP, GaAsP, etc.). The range of colours, sizes and luminous efficiencies likely to become available are subject,
however, to certain fundamental limitations of the materials used. These are related to the size and nature of the forbidden
energy gap, crystal defect structure as well as other factors. Applications will also be limited by the range of promising
non‐semiconductor display systems in advanced stages of development against which large LED arrays will not be able to compete.

Restricting these applications to the more viable small alphanumerics and indicator lamps, however, alternative
semiconductor materials with extremely attractive physical properties exist, although other problems take the place of
those mentioned above. For example, most of the II–VI compound semiconductors (CdS, ZnSe, etc.) cannot be
doped both n and p type, precluding the manufacture of p–n diode lamps.

In this paper the desirable properties of materials to be developed for future lamp applications are briefly discussed,
against background data on current materials, semiconductor materials fulfilling these criteria are introduced and ways
in which existing technological difficulties may be circumvented are described.

The paper is concluded with comments upon arguably the most interesting development of recent years, the
interfacing of silicon with low voltage excitable “phosphors” in the form of oriented epitaxial
semiconductor films. Preparation, properties and advantages in direct integration with SIC addressing machinery
are outlined.
Conduction Processes in High Value Thick Film Resistors
Authors: Robertson J.
Published: June 2007

This paper describes conduction processes in thick film resistors made from 1 MΩ/square and 10 MΩ/square pastes.
Conductivity as a function of temperature indicates activation energies in the order of 1 meV. At high fields,
conductivity is increased. These results are interpreted on the basis of a model where the main resistor characteristics
are determined by hopping conduction in a narrow impurity band in the glass phase of the resistor.
Reactive Sputtering of NiCr Resistors With Closely AdjustableTemperature Coefficient of Resistance
Authors: Griessing Jürgen
Published: June 2007

A process is described to obtain NiCr resistors with adjustable temperature coefficient of resistance (TCR) by
reactive sputtering in an Ar‐atmosphere with a small amount of oxygen in the range of 2% to 6%. As deposited the
films show a TCR < −200 ppm/K. By heat treatment in air at a temperature of 350°C the TCR can be raised to
values above −20 ppm/K. The time of heat treatment necessary to obtain a given TCR depends on the oxygen/argon
ratio during sputtering. The long term stability is not affected by the choice of this ratio in a wide range.

Resistor networks with a solderable conductor pattern of TiPdAu have a TCR of 0±7 ppm/K and a long term
resistance drift ≤ 2‰ in the first 1,000 hours at 125°C.
Adhesion Measurements of Metallizations for Hybrid Microcircuits
Authors: Kadereit H. G. , Schlemm A.
Published: June 2007

In a method developed for measuring the adhesion of metallic films for hybrid microelectronic circuits, pull rods
soldered or epoxy bonded to metallization pads are pulled off at an angle normal to the substrate. The test circuits
and testing devices are described. Tensile strengths of 40 to 80 N/mm2 and 5 to 30 N/mm2 are typical for thin‐film
circuits and thick‐film circuits, respectively. The weakest point in the overall circuit configuration is determined.
The information obtained indicates the maximum permissible mechanical loads to which the discrete devices of
microelectronic circuits can be exposed and may also be evaluated for process optimization.
Remarks on Wire and Die Bonding for Hybrid Circuits
Authors: Soffa A.
Published: June 2007

Advances in hybrid automatic wire bonding include refined joy stick techniques, automatic alignment, a digitally
operated head for higher speeds and flexibility, missing ball detection and programming aids. Advanced hybrid die
attach equipment will have to accept a large variety of chip presentation techniques but will use CCTV and automatic
alignment with microprocessor controls to aid programming and speed output.
A High Speed ECL Multiplexer in Beam Lead, Hybrid Technology
Authors: Coughlin J. B. , Hughes J. B. , Watts R. S. , Siegert F. W.
Published: June 2007

A high speed ECL multiplexing unit which accepts 4 channels of data and control information is described.
Compatibility with commercial circuits to facilitate economic interfacing at low speed data rates is an integral design
criterion. Built from flip‐flops and gates made in a 5 GHz
fT chip technology which includes two‐level metallisation
and gold beam leads, the multiplexer is mounted on a ceramic substrate and contained in a standard DIL package.
Dissipating less than 0.75 watt it outputs data faster than 300 Mb/s. Some conclusions concerning the merits of
combining hybrid and monolithic technology are drawn.
The Reliability, Testing and Evaluation of Hybrid Microcircuits
Authors: George A. H.
Published: June 2007

Reliability aspects of Hybrid Microcircuits are considered, including a prediction model illustrating the detail
knowledge of the technology and application necessary. Circuit, part and element data is presented for two different
test circuits. Use is made of predicted circuit failure rates to establish an electrical endurance test programme
together with the thermal stress levels likely to generate some failures in an acceptable time. Results of testing the
circuits at more than one temperature are presented, evaluated and compared with prediction. Failure analysis
enables the performance of add‐on parts, circuit elements and bonds to be assessed. A second series of test circuits
confirms an improved bonding system. The usefulness of reliability modelling prior to endurance testing is justified
together with some degree of thermal overstress.
UHV – Deposited Amorphous Tantalum and Tantalum–Nickel Films
Authors: Schäfer Alfred , Menzel Günther
Published: June 2007

Tantalum produced by ultra‐high vacuum vapour quenching has been identified on the basis of various forms of
evidence as amorphous tantalum. Tantalum in this amorphous form has a resistivity of 230 μΩ cm and a temperature
coefficient of resistivity (TCR) of –60 ppm/K. The films are stable below –90°C. At higher temperatures the
amorphous structure suddenly turns into coarse‐grained α tantalum.

Alloying with a mole fraction of 20% to 55% resulted in amorphous tantalum‐nickel films with a temperature
coefficient between –300 ppm/K and +500 ppm/K. The structure of the tantalum‐nickel films, which are stable up
to 300°C, was investigated by transmission electron microscopy.

Deposition of the tantalum on substrates heated to temperatures between –80°C and +150°C resulted in β tantalum, which turned into α tantalum between 160°C and 240°C. The appearance of positive and negative
temperature coefficients in the amorphous films indicates that even in the amorphous state different conduction
mechanisms may exist. According to the clean deposition conditions no influence of the residual gas on the film
properties can be expected.
Hybrid Interconnection of I.C.′S by Means of Patterns on Flexible Tape
Authors: van der Drift A. , Van Nikelsberg K. F. Nickl
Published: June 2007

Mounting of I.C.′s on thickfilm circuits by means of patterns on foil of a total thickness of about 30 microns is
described. The extreme flexibility of the foil and some well controlled characteristics of the thickfilm process
aid soldering of the chip with a reproducible low heat resistance to the substrate in a cheap and reliable way.
Hybrid‐Integrated Series‐to‐Parallel Converters for Gigabit Rates
Authors: Hanke G.
Published: June 2007

The generation and processing of data signal sequences in the gigabit range make high demands on circuitry and
technology. For this high‐speed thick‐film switching circuits have proved successful. With a suitable circuitry, which
is tailored to both the requirements of the subnanosecond range and the conditions of the thick‐film technique, it is
possible to solve many problems connected with the generation and processing of data signals in the gigabit range.

The conventional method of series‐to‐parallel conversion with shift registers can, however, not be applied at
justifiable costs with the present‐day components. Therefore signal processing at the receiving end by bit error rate
measuring equipment at bit rates from 640 Mbit/s up to 1,28 Gbit/s is used to demonstrate hybrid‐integrated thick‐film
circuits which, in connection with coaxial and strip lines, allow the series‐to‐parallel conversion of high bit rates.

The principle applied here uses lines as storing elements and high speed gates as switches. By supplying the data
signal as well as the shift and sampling clocks in a serial mode, it is possible to obtain a geometrically linear
arrangement of the thick‐film circuits so that problems of clock supply and differing signal delays can be excluded.
The combination of a few extremely high‐speed thick‐film circuits with commercial monolithic circuits allows
series‐to‐parallel conversions to be performed in a simple, reliable and flexible way and in any conversion ratio.
Resistor Geometry Comparison With Respect to Current Noise and TrimSensitivity
Authors: Ulbrich W.
Published: June 2007

The paper deals with laser trimming of film resistors. The finite‐difference solution of the electric field calculated by
a digital computer gives the total resistance and the inhomogeneous current distribution within the resistor area. The
current noise voltage was found to be proportional to the sum of reciprocal subareas wherein the current density is
approximately constant. Resistor trimming is modelled by finite increments of cut length to obtain the resistance
trim rate and the trim sensitivity.

Known and new resistor geometries and cut configurations are compared (based on the same resistor area and
the same initial tolerance of ± 20%) to find the optimal geometry depending on the ratio of the nominal resistance
value to the sheet resistivity. Diagrams are given leading to practical design rules not only for resistance trimming but
also for deterministic and functional tuning.