PROSPECTS OF GRAPHENE NANOELECTRONICS
Authors: Zhuravleva L. M. , Nikulina Y. A. , Lebedeva A. C. 
Published: October 2022

[For the English abstract and full text of the article please see the attached PDF-File (English version follows Russian version)].ABSTRACT The article with regard to transport developments deals with topical issues of improving electronics engineering and of transition to new technological structures associated with nanotechnology. It is noted that the main direction of evolution of nanoelectronics is linked to new electronics components based on new materials like graphene. Possibility and prospect of replacing traditional and most used silicon materials with graphene are reviewed. Brief information about methods of manufacturing, benefits and advantages of the use of graphene is followed by the arguments in favor of development of technique capable to open the band gap, allowing transition of graphene into semiconductor. Methods of mass commercial manufacturing of graphene semiconductor are discussed. Keywords: transport, science, functional material, graphene, graphite, electronics, nanoelectronics, nanotechnology. REFERENCES 1.Graphene.[Electronic source]: https://ru.wikipedia.org/wiki/%D0%93%D1%80%D0%B0%D1%84%D0%B 5%D0%BD.Last accessed 27.11.2015. 2.Poverennaya, M.Graphene boom.Results [Grafenovyj bum: itogi].Nanotehnologicheskoe soobshhestvo, Iss.October 26,2012.[Electronic source]: http://www.nanometer.ru/2012/10/26/13512365078102_298275.html.Last accessed 27.11.2015. 3.Nobel Prize in physics was awarded for creation of graphene [Za sozdanie grafena prisuzhdena Nobelevskaja premija v oblasti fizike].[Electronic source]: http://venture-biz.ru/tekhnologii-innovatsii/93-grafen-nobelevskaya-premiya.Last accessed 27.11.2015. 4.Zhuravleva, L.M., Plekhanov, V. G.Isotopic creation of semiconductor graphene [Izotopicheskoe sozdanie poluprovodnikovogo grafena].Nanotehnika, 2012, Iss.3, pp.34-39. 5.Graphene.Physics [Grafen. Fizika].[Electronic source]: http://4108.ru/u/grafen_-_fizika.Last accessed 27.11.2015. 6.Yudintsev, V.Graphene.Nanoelectronics is rapidly gaining strength [Grafen. Nanoelektronika stremitel’no nabiraet sily].Elektronika, nauka, tehnologija, biznes, 2009, Iss.6.[Electronic source]: http://www.electronics.ru/ journal/article/269.Last accessed 27.11.2015. 7.Samardak, Alexander.Graphene, new methods of synthesis and the latest advances [Grafen: novye metody poluchenija i poslednie dostizhenija].Elementy.Iss.30.09.2008.[Electronic source]: http://elementy.ru/ novosti_nauki/430857/Grafen_novye_metody_ polucheniya_i_poslednie_dostizheniya.Last accessed 27.11.2015. 8.Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., Firsov, A. A.Electric Field Effect in Atomically Thin Carbon Films.Science, V. 306, 22 October 2004, pp.666-669. 9.Bekyarova, E., Itkis, M.E., Cabrera, N., Zhao, B., Yu, A., Gao, J., Haddon R. C.Electronic Properties of Single-walled Carbon Nanotube Networks.Journal of American Chemical Society, 2005, Vol.127, No.16, pp.5990-5995. 10.Palnitkar, U.A., Kashid, R.V., More, M.A., Joag, D.S., Panchakarla, L.S., Rao, C.N.R.Remarkably Low Turn-on Field Emission in Undoped, Nitrogen-doped, and Boron-doped Graphene.Applied Physics Letters, 2010, Vol.97, No.6, pp.063102-063102. 11.Chernozatonsky, L.A., Sorokin, P.B., Belova, E.E., Bruening, J., Fedorov, A. S.Superlattices consisting of «lines» of adsorbed hydrogen atom pairs on graphene [Sverhreshetki, sostojashhie iz «linij» adsorbirovannyh par atomov vodoroda na grafene].Pis’ma v ZhETF, 2007, Vol.85, Iss.1, pp.84-89. 12.Novoselov, K. S.Graphene: Materials of Flatland [Grafen: Materialy Flatlandii].UFN, 2011, Vol.181, pp.1299-1311. 13.McCann E., Koshino M.The Electronic Properties of Bilayer Graphene // Reports on Progress in Physics, 2013, Vol.76, No.5, pp.056503(28). 14.Chernozatonsky, L.A., Sorokin, P.B., Belova, E.E., Bruening, J., Fedorov, A. S.Superlattices metal - semiconductor (semimetal) on a graphite sheet with vacancies [Sverhreshetki metall - poluprovodnik (polumetall) na grafitovom liste s vakansijami].Pis’ma v ZhETF, 2006, Vol.84, Iss.3, pp.141-145.