Correlation Between the V-I Characteristics of (0001) 4H-SiC PN Junctions Having Different Structural Features and Synchrotron X-ray Topography
Authors: Kosugi Ryoji , Sakata Toyokazu , Sakuma Yuuki , Yatsuo Tsutomu , Matsuhata Hirofumi , Yamaguchi Hirotaka , Nagai Ichiro , Fukuda Kenji , Okumura Hajime , Arai Kazuo 
Published: April 2011

In practical use of the SiC power MOSFETs, further reduction of the channel resistance, high stability under harsh environments, and also, high product yield of large area devices are indispensable. Pn diodes with large chip area have been already reported with high fabrication yield, however, there is few reports in terms of the power MOSFETs. To clarify the difference between the simple pn diodes and power MOSFETs, we have fabricated four pn-type junction TEGs having the different structural features. Those pn junctions are close to the similar structure of DIMOS (Double-implanted MOS) step-by-step from the simple pn diodes. We have surveyed the V-I characteristics dependence on each structural features over the 2inch wafer. Before their fabrication, we formed grid patterns with numbering over the 2inch wafer, then performed the synchrotron x-ray topography observation. This enables the direct comparison the electrical and spectrographic characteristics of each pn junctions with the fingerprints of defects.Four structural features from TypeA to TypeD are as follows. TypeA is the most simple structure as same as the standard pn diodes formed by Al+ ion implantation (I/I), except that the Al+ I/I condition conforms to that of the p-well I/I in the DIMOS. The JTE structure was used for the edge termination on all junctions. While the TypeA consists of one p-type region, TypeB and TypeC consists of a lot of p-wells. The difference of Type B and C is a difference of the oxide between the adjacent p-wells. The oxide of TypeB consists of the thick field oxide, while that of TypeC consists of the thermal oxide corresponding to the gate oxide in the DIMOS. In the TypeD structure, n+ region corresponding to the source in the DIMOS was added by the P+ I/I. The TypeD is the same structure of the DIMOS, except that the gate and source contacts are shorted. The V-I measurements of the pn junctions are performed using the KEITHLEY 237 voltage source meters with semi-auto probe machine. An active area of the fabricated pn junctions TEGs are 150um2 and 1mm2. Concentration and thickness of the drift layer are 1e16cm−3 and 10um, respectively.In order to compare the V-I characteristics of fabricated pn junctions with their defects information that obtained from x-ray topography measurements directly, the grid patterns are formed before the fabrication. The grid patterns were formed over the 2inch wafer by the SiC etching. The synchrotron x-ray topography measurements are carried out at the Beam-Line 15C in Photon-Factory in High-Energy-Accelerator-Research-Organization. Three diffraction conditions, g=11-28, -1-128, and 1-108, are chosen in grazing-incidence geometry (improved Berg-Barrett method).In the presentation, the V-I characteristics mapping on the 2inch wafer for each pn junctions, and the comparison of V-I characteristics with x-ray topography will be reported.