bluuebunny/crossref_metadata_2025 huggingface dataset:
Electrical Resistivity of Lead Zirconate Titanate Ceramics Containing Impurities
Authors: Takahashi Masao
Published: November 2005

Electrical resistivity and its temperature variation are measured for lead zirconate titanate ceramics containing various metal oxides as impurities. The impurities can be classified from their influence on the resistivity of ceramics into the following three groups.
(1) Impurities which keep the resistivity nearly unchanged (e.g. Fe2O3).
(2) Impurities which increase it enormously because of electron-hole compensation (e.g. Nb2O5).
(3) Impurities which increase it at first (electron-hole compensation) and then decrease it (e.g. Cr2O3).
The decrease of resistivity in group (3) seems to be caused by the generation of segregated impurity layers which enclose the grains in ceramics. This postulate is confirmed quantitatively by the measurements of resistivity of the ceramics in which impurities are injected by means of thermal diffusion.
Monte Carlo Calculations on Electron Scattering in a Solid Target
Authors: Murata Kenji , Matsukawa Takayuki , Shimizu Ryuichi
Published: November 2005

The Monte Carlo technique using a simple single scattering model, different from Reimer's, is applied to the field of the Electron Probe Microanalyzer (EPMA) and the Scanning Electron Microscope (SEM). The calculations show fairly good agreement with the experiments on back-scattered electrons, energy dissipation, characteristic X-ray production and secondary electron emission. Also the electron trajectories are depicted on the chart by the plotter connected with the digital computer.
Solution Growth of Highly Perfect Crystals of Zinc Telluride
Authors: Fuke Shunro , Washiyama Masako , Otsuka Koji , Aoki Masaharu
Published: November 2005

Single crystals of ZnTe are grown by using the solution growth method from zinc or tellurium solution in a quartz crucible. The examinations of etch pits and inclusions using a microscope are performed. Crystals grown from zinc solution have etch pit densities between 102 and 104 cm-2 and have almost no inclusion. Growth habit of the crystals is studied. Once nucleation is achieved, a flat-shaped crystal bounded by (111) faces grows rapidly to show a rhombic shape in the presence of a directional heat flow. The thickening of the platelet results from the lamellar growth with nucleation occurring at the edge.
Concerning the Maximum Melting Point
Authors: Weir C. E.
Published: November 2005

The theory of Kawai and Inokuti of the behavior of the melting point of solids as a function of pressure is discussed. The general theory is not considered applicable to the vast majority of materials known to date.
Properties of Oxidized SnO2 Single Crystals
Authors: Nagasawa Masahiro , Shionoya Shigeo
Published: November 2005

Undoped SnO2 single crystals are heat-treated in high pressure oxygen gas for the purpose to “oxidize” the crystals. The decrease in carrier density with the advance of the oxidization is examined by means of infrared transmission measurements. It is concluded that the “oxidizing procedure” effectively diminishes the amount of native defects involved in the crystals. Spectral dependence of the ultraviolet photoconductivity of the oxidized crystals is analysed in relation to the band structure of the material.
Some Properties of Europium β-diketone Chelates II Polarized Spectra and Ligand Field Symmetries
Authors: Sato Susumu
Published: November 2005

Single crystals of pyrrolidinium salts of europium tetrakis benzoyltrifluoroacetonate (HPyrr.)Eu(BTFA)4 are prepared and the polarized fluorescence and absorption spectra for each crystal axis are obtained. Electric dipole or magnetic dipole selection rules have been applied to these spectra and the ligand field symmetries which are consistent with the results of the polarized spectra are determined. When the crystals are grown from acetonitrile solutions, the crystal system is monoclinic and the ligand field symmetry is C
2v
, but when the crystals are grown from acetone solutions, these are orthorhombic and S
4 respectively.
The Role of Electronics in the Interpretation of Magnetic Measurements of Anisotropic Films
Authors: Dey S. K. , Kubo A. M.
Published: November 2005

The purpose of this paper is to point out possible causes of misinterpretation of results of magnetic measurements of thin films owing to the influence of electronic circuits used for the measurement.
Investigations of Images of a Superdislocation and a Dislocation Dipole Using the Systematic Reflections
Authors: Fukamachi Masatoshi
Published: November 2005

A study is made on the resolution of images of pairs of closely spaced dislocations in the bright-field electron microscopy when the foil is tilted to give the systematic reflections. Experiments are carried out on a superdislocation in an ordered Cu3Au alloy and on a dislocation dipole in stainless-steel, using electron microscopes operated at 125 kV and 500 kV. The image width of dislocation becomes narrow and the resolution is improved by tilting a specimen to give the systematic reflections and to satisfy the Bragg condition at higher-order reflections. A superdislocation with a separation of 50 Å between a pair of dislocations is observed as a two-line image. It is shown that this technique gives as good a resolution of closely spaced dislocations as the weak-beam technique.
Effects of Substrate Temperature during RF-Sputtering of Silica on Optical and Chemical Properties, and Re-Emission Coefficient
Authors: Kubota Takehiko
Published: November 2005

The optical and chemical properties of rf-sputtered silica films have been investigated as a function of film thickness. As the film thickness increases up to 1500 Å, the deposition rate decreases while the etch rate increases. The peak position of absorption near 9 µm for as-sputtered film shifts toward shorter wavelengths with increasing film thickness. This tendency is also observed in the case of heat-treated film, but peak positions shift by smaller amounts than those of as-sputtered film. The above phenomena are closely related to the substrate temperature during the sputtering. Using the absorption coefficient and half-width of the 9 µm absorption-band, the degree of oxygen deficiency is estimated to be 10%. The re-emission coefficient calculated from the film-thickness-dependence of the deposition rate decreases with increasing sputtering voltage.
An Electrical Resistivity Study of Lattice Defects in Deformed Iron
Authors: Tanaka Kazuhide , Watanabe Tetsuro
Published: November 2005

To elucidate the effects of purify and deformation temperature on the production of lattice defects, strain-induced electrical resistivity Δρ has been measured at -196°C as a function of true strain ε

T
. In deformation at -196°C, Δρ varying according to ε

T

3/4 has been divided into a part Δρ
a
which anneals out at room temperature and its residual part Δρ
r
. The latter changes linearly with ε

T
. The rate of increase of Δρ becomes larger as the purity is reduced, but does not depend on method of straining, i.e., interrupted deformation or continuous one. In deformation at room temperature, the rate is much lower than that at -196°C, and is less dependent on purity. An analysis of Δρ
r
, and Δρ under room temperature deformation indicates that dislocations are the major contributions to Δρ
r
and Δρ, and the specific resistivity of dislocations in iron is evaluated as (1.0±0.4)×10-18 Ω cm3.
Optical Heterodyning with Noncritical Angular Alignment Using a Pair of Ultrasonic Light Modulators
Authors: Ohtsuka Yoshihiro
Published: November 2005

Dual diffraction of a coherent light beam passing through a pair of ultrasonic light modulators (ULM's) are studied analytically for optical heterodyning on the basis of geometrical optics. Since every collinearly diffracted light beam experiences double frequency shifts through the ULM's, a pair of such beams can produce a beating signal having a frequency equal to the difference between their frequencies. Some factors which influence the phase stability of the beating signal as well as the spatial requirement for coincidence between the two wave-fronts of photomixed light are clarified. A numerical calculation using a pair of the first order diffracted light beams of 6328 Å predicts that the inclination tolerance of the second ULM is about ±3° for the fixed first ULM, when the first and second sound frequencies are 8 and 7 MHz respectively, and the receiving area of a detector is 1 cm in width.
Precise Measurements of the Infrared Spectra near 9µm Obtained from RF-Sputtered Silicon Oxide (SiOX) Films
Authors: Kubota Takehiko , Kamoshida Mototaka
Published: November 2005

Optical properties of RF-sputtered silicon oxide films is studied as a function of sputtering voltage, film thickness and heat treatment conditions. The wavelength of 9-µm absorption band becomes shorter with increasing sputtering voltage and film thickness for as-sputtered films, but this is not the case for films heat-treated above 700°C in Ar. This phenomenon can be explained by oxygen deficiency in the sputtered films, the degree of which is estimated at 6% after the heat-treatment.
Collisional-Radiative Calculation of the Population Inversion in the Argon Ion Laser
Authors: Fujimoto Takashi
Published: November 2005

The collisional-radiative and population coefficients are calculated on singly ionized argon to estimate the population densities of excited levels and the population inversion in a typical argon laser plasma. The output power calculated from the population inversion is in good agreement with the experimental data so far reported. The saturation and quenching of the inversion at high-level excitation is interpreted in terms of the processes which contribute to the pumping and depletion of laser upper level. It is suggested that radiation trapping for the transition from 3dto the ground level increases the population inversion in large bore tubes.
High-Resolution Video Display of X-Ray Topographs with the Divergent Laue Method
Authors: Kozaki Shigeru , Hashizume Hiroo , Kohra Kazutake
Published: November 2005

An X-ray imaging device utilizing a high sensitivity image orthicon tube has been incorporated in the divergent Laue method of diffraction topography using a point source. An X-ray optical magnification of diffraction images has made it possible to obtain a spatial resolution better than that of the imaging device. Preliminary experiments have demonstrated that individual dislocations in silicon crystals can be displayed with a resolution of better than 25 µm.
Construction and Use of Rotating Cylinder Viscometers
Authors: Sugi Nagatoshi , Tsunashima Yoshisuke , Ikehara Kenji , Utiyama Hiroyasu
Published: November 2005

Three types of simplified rotating cylinder viscometers for dilute macromolecular solutions, two for dilute aqueous solutions, and the third for non-aqueous solutions, have been constructed, and their use are described in detail. An eddy-current drive with a permanent magnet rotated by a geared synchronous motor has been utilized in the viscometers yielding a very low shear stress in the range of 10-4∼10-2 dynes/cm2. The intrinsic viscosity extrapolated to zero shear stress could be measured within the experimental error of ±1%. Applications of the viscometers to studies of organic solutions of a poly-α-methylstyrene sample with molecular weight of 6.85×106, and of agueous solutions of tropocollagen extracted from earthworm cuticle is also presented.
Acoustoelectric Aftercurrents in Photoconducting CdS
Authors: Neudorfer M. L. , Yee S.
Published: November 2005

Two aspects of the acoustoelectric aftercurrent in photoconducting CdS are investigated. First, the value of the aftercurrent immediately after the voltage is removed (the maximum aftercurrent) is considered. A linear model is shown to predict that the maximum aftercurrent is proportional to the difference between the ohmic current and the current just before the voltage is removed. The experimental results show good qualitative agreement with this prediction. Secondly, the time behavior of the aftercurrent is considered. The persistence time of the aftercurrent is found to be dependent on the maximum aftercurrent in agreement with the predictions of the model.
Polarized Memory Effect Observed on Se-SnO2 System
Authors: Matsushita Tatsuhiko , Yamagami Teiichi , Okuda Masahiro
Published: November 2005

The polarized memory effect (the memory in which switching between ON and OFF states depends on the polarity of the bias voltage) on the Se-SnO2 system is described. This effect is observed on the samples with Se films 300∼5000 Å in thickness. The ratio of the resistance of OFF state R

O
F
F
to that of ON state R

O
N
is about three orders of magnitude. In the case of the film with thickness 103 Å, the threshold voltage from OFF to ON states V

t
h
is 15 V, and the reverse voltage from ON to OFF states V

r
is 3.5 V.
On Steady Tokamaks with Relativistic Electrons
Authors: Ikuta Kazunari
Published: November 2005

A simple method of maintaining a toroidal current in resistive plasmas is proposed. A high current relativistic electron ring with its major radius approximately equal to that of toroidal plasma and a low intensity ion beam are injected into the plasma. The resultant increase in the plasma current compensates for the decay of the current due to the plasma resistivity. It turns out that the ion beam current required may be much smaller than that of the electron ring.
Resolving Time Measurements of GM and Gas-Flow Counters Using a Time-to-Amplitude Converter
Authors: Nakamoto Shunsuke
Published: November 2005

A slow time-to-amplitude converter is fabricated for the time interval measurements of self-quenching type GM and gas-flow counters. With this converter, the resolving times of counters are analyzed. The resolving time has the peak value at the beginning of the GM-threshold voltage and decreases at the higher supplied voltage. The approximate position of the ion sheath of the normal discharge at which the field strength of a counter recovers to the GM-threshold is also determined by comparing the resolving time with the calculated velocity of the ton sheath. The resolving time is proportional to the pulse amplitude at low supplied voltages and is nearly constant at higher voltages. These phenomena can be explained by the recovery curves of the field strength near the center wire. Another application of the coverter is also suggested.
Carrier Generation in Germanium Implanted with Aluminum at Room Temperature
Authors: Ohdomari Iwao , Itoh Tadatsugu
Published: November 2005

Nearly intrinsic p-type germanium was implanted with aluminum ions of 10 keV at room temperature. Carrier distribution and the temperature dependences of (N

s
)eff and µeff of aluminum-implanted layers in the substrates were investigated. From the experimental results it was made clear that two kinds of acceptors were introduced in germanium by aluminum implantation; the one associated with vacancy and the other formed by substitutional aluminum atom. The acceptor associated with vacancy had a shallow ionization level as well as that associated with substitutional aluminum atom so that the conductivity of the implanted layer had scarecely any temperature dependence between 77 and 300 K.
Magnetogasdynamic Externally Pressurized Bearing with Converging Film
Authors: Biswas Kalyan Kumar
Published: November 2005

The magnetogasdynamic externally pressurized bearin with converging film in the presence of an axial magnetic field is investigated. It is shown that the load capacity of an externally pressurized bearing is increased by the application of amagnetic field. The externally pressurized bearing can support more load by using an adiabatic lubricant than using an isothermal lubricant. Further it is seen that the load capacity of converging film is more than that of uniform film.
Transient Thermal Analysis and Experiments of Pyroelectric Detectors
Authors: Hatanaka Yosinori , Kamiryo Kozo , Kano Tetsuo
Published: November 2005

Theoretical and experimental investigations of the thermal transient phenomenon are described on pyroelectric elements on which a light pulse is projected. The transient distribution of pyroelectric elements is calculated as a function of time and space, and discussed for the case of the pyroelectric current. Samples of lead zirconate titanate ceramics (P.Z.T.) and triglycine sulfate (T.G.S.) are used, and these samples are freely suspended or mounted on heat sinks in the experiments. The pyroelectric current follows exactly the incident light pulse in the case of homogeneous spontaneous polarization, but not in the case of inhomogeneous polarization. The mechanism of fast response for pyroelectric detectors is fairly well explained by the thermal diffusion process, and it is shown that the transient response is not diffusion process, and it is shown that the transient response is not affected by the heat sink. These results provides useful data for designing pyroelectric detectors and pyroelectric thermal image devices.
Spectroscopy of Light Scattered by Suspended Charged Particles
Authors: Yoshimura Takeaki , Kikkawa Atsushi , Suzuki Norihito
Published: November 2005

Two spectroscopic techniques of the Rayleigh scattered light have been investigated. One investigation is on a method to measure the Rayleigh linewidth precisely. From the measurements it is found that the linewidth of the scattered light by the polystyrene latex particles in the buffer solution is significantly different from that obtained from the Einstein-Stokes relation. The other investigation is on an application of the spectroscopic method for the detection of the electrophoretic analysis. From the investigation it is found that the Rayleigh scattered spectral line shows the Doppler shift by the electrophoretic movement of the particle and that the electrophoretic velocity can be measured in real time.
Surface Contamination of GaAs during Photo-Etching
Authors: Sato Yasuo , Uchida Masao
Published: November 2005

Surface contamination of GaAs due to resist film stripper “J–100” during the photo-etching process is investigated. It is found that the electron concentration near the surface decreases due to the heat treatment after soaking in J–100. The depth of contamination sometimes reaches about 100 µm. Contamination also occurs due to some organic solvents, although the degree of contamination is smaller than that due to J–100. Such contamination can be removed by etching the contaminated surface of GaAs lightly or soaking contaminated samples in a dilute solution of KCN before the heat treatment. Furthermore, the temperature and time dependence of the depth of the contamination are similar to those of the samples soaked in a dilute solution of CuSO4. It is concluded that contamination originates from Cu atoms contained in these solvents.
Microwave Oscillation in Germanium Avalanche Diodes II
Authors: Takeshima Masumi
Published: November 2005

The previously developed calculation by the present author of the microwave output power from avalanche diodes for the intermediate power magnitude is used to analyze the temperature dependence of the output power. It is found that the behavior of the germanium diodes having linearly graded junctions can be well interpreted in terms of the temperature dependence of the small signal impedance parameters. A theoretical design of the diodes having the best microwave performance over the practical operation temperature range is established.
Zinc Diffusion into GaAs1-xPx by Ga-P-Zn Ternary Alloy Source
Authors: Ono Yūichi , Kurata Kazuhiro
Published: November 2005

In order to form the p-n junction in Te-doped GaAs1-x
P
x
(x=0.4) grown by a Ga-As-PCl3-H2 epitaxial system, zinc diffusion by a Ga-P-Zn ternary alloy source is found to be useful. Diffusion is performed by an ampoule diffusion method, and composition of the diffusion source is calculated from the Ga-P-Zn ternary phase diagram. This diffusion source provides high phosphorus overpressure and leads to smaller diffusion coefficients and more planar p-n junctions. Diffusion depth and junction planarity might be less dependent on the GaAs1-x
P
x
surface morphology and the degree of crystal perfection. Junction profile is a mixed abrupt-graded type from Capacitance-Voltage measurement. In the result of X-ray micro-probe analysis, a “window effect” is simultaneously revealed by the Ga-P-Zn system diffusion.
C-V Shift Characteristics of Metal-Al2O3-Si and Metal-Al2O3-SiO2-Si Structures
Authors: Tsujide Tohru
Published: November 2005

C-V shift characteristics of MAS(Metal/Al2O3/Si) structure with Al2O3 prepared by the hydrolysis of AlCl3 are investigated as a function of the Al2O3 thickness, the temperature and the applied pulse width. Using also MAOS(Metal/Al2O3/SiO2/Si) structure the critical voltage required to shift the C-V curve is given as a function of the SiO2 thickness. The results show that the critical voltage of MAOS structure increases in proportion to the SiO2 thickness over the range 0–700Å for negative bias and in the range 80–700Å for the positive bias. Liquid such as Hg and diluted H3PO4 is used as an electrode as a substitute for metal. This Liquid/Al2O3/Si structure is not found to exhibit the positive C-V shift for the negative bias case. A qualitative explanation responsible for the C-V shift characteristics of MAS and MAOS structures is presented from these experimental results.
Design Criteria of Linacs for Spectrum and Instabilities of Electron Energy
Authors: Irie Koichi
Published: November 2005

Design criteria for spectrum and instabilities of electron energy are given with the accelerating structure of the phase velocity equal to the light velocity. The broadening of energy spectrum is due to energy difference of electrons during a pulse and phase shift of electrons along the accelerating structure. For usual S-band linacs of 2 meters long operated in 2π/3 mode, tolerances necessary to limit the broadening of energy spectrum within 5% are: klystron beam-voltage irregularities below 1.2%, RF frequency irregularities below 2.1×10-5, temperature deviation and gradient of the accelerating structure below 1.3 degrees and 2.0 degrees, respectively, dimensional errors of the accelerating structure below 0.014 mm, and the beam loading irregularities below 5%. These are disscussed theoretically and some of them are compared with the experimental values.
Transient and Stationary Temperature Rise of the Accelerating Structure in Electron Linacs
Authors: Irie Koichi
Published: November 2005

Temperature equations which describe temperature distribution along the accelerating structure as a function of time are solved in some special but practical cases on traveling wave electron linacs. The time constant of temperature rise of the accelerating structure is about 20 seconds and the saturated temperature rise is about 2°C in usual S-band linacs for radiography and medical therapy. Also the temperature gradient along the accelerating sructure is discussed and its effects on performances of electron linacs are shown to be little.
Properties of InSb Photodiodes Fabricated by Liquid Phase Epitaxy
Authors: Kanzaki Koichi , Yahata Akihiro , Miyao Wataru
Published: November 2005

High detectivity InSb photodiodes have been developed by using the liquid phase epitaxy technique. They have n on p structure. Infrared radiation absorption in the Te doped n layer is quite small, due to the Burstein-Moss effect. The quantum efficiency of the photodiode is limited only by diffusion length L

n
of minority carriers in the p region. Values obtained were from 0.2 to 0.3. The zero bias resistance of 2 mmφ diodes was from 100 to 200 kΩ. Specific detectivity D
λ
*(λ=5 µm, frequency 1 kHz) was from 5×1010 to 1×1011 cmHz1/2/W.
Mass Analyses of Cluster Ion Beams by Wien Filter
Authors: Yano Katsuki , Be Suck Hee
Published: November 2005

Distributions of mass of cluster ion beams were investigated by using a Wien filter with permanent magnets, which is 200 mm in length. Resolving powers of the Wien filter in the mass range of 103 to 106 a.m.u. were estimated. The Wien filter is useful for studies of clusters having 102–104 molecules/cluster. Argon cluster beams were ionized up to about ten charges when ionizing current was 15 mA. There were two different mass groups in hydrogen cluster beams produced, even at gas temperature of 77.3 K.
Computer Simulation of Atomic Structure of Fe75P25 Amorphous Alloy
Authors: Kobayashi Shinji , Maeda Koji , Takeuchi Shin
Published: November 2005

A computer model of the amorphous structure of Fe75P25 alloy has been constructed by random positioning of the two species of atoms followed by relaxation. Taking acount of the similarity in partial radial distribution functions (PRDF's) between amorphous Fe75P25 reported in the literature and crystalline Fe3P, a special non-spherical interatomic potential has been used for the Fe-P pair to stabilize the trigonal prism unit that constitutes the Fe3P crystal. The PRDF curves obtained show general agreement with experimental ones. In particular, the characteristic wide splitting of the second peak in Fe-P PRDF is reproduced. This indicates that the structure of amorphous Fe75P25 reflects chemical interaction between Fe and P atoms.
The Simulated and Observed Structure of a Σ=11 Tilt Boundary in Gold and the Vibration of Individual Atoms at the Grain Boundary
Authors: Hashimoto Minoru , Ichinose Hideki , Ishida Yoichi , Yamamoto Ryoichi , Doyama Masao
Published: November 2005

The atomic structure of a Σ=11 tilt grain boundary in gold was simulated by the molecular dynamic techninue using the Morse potential. The simulated structure is compared with the lattice image of a Σ=11 boundary in gold observed by high resolution electron microscopy. The local density of states of phonons was calculated by the recursion method for atoms near the boundary plane. It was found that the resonant mode with a large amplitude occurs with atoms at the boundary plane.
Thermodynamics and Distribution Function of Neutron Gas System in a Stationary Power Reactor with Decoupling
Authors: Hayasaka Hideo
Published: November 2005

The thermodynamics and the distribution function of a neutron gas system in a stationary power reactor with decoupling have been considered using the concept of locally partial equilibrium. The local entropy production in the neutron gas system in a power reactor depends on heat production, temperature, temperature gradients, chemical potentials, etc., which are local quantities arising from space-dependent nuclear reactions. Such local entropy production has its minimum value in the steady state. The local distribution function of the neutron gas in a power reactor is expressed by the generalized Boltzmann distribution specified by the respective generalized activity coefficient or the respective generalized chemical potential for each subsystem.
Photoluminescence of CaS: Ce, Na Phosphor
Authors: Fujita Hiizu , Okamoto Fumio , Kato Katsuhiro
Published: November 2005

The photoluminescence and excitation spectra for the CaS: Ce, Na phosphor were measured at liquid nitrogen temperature. The photoluminescence spectrum was identical to the cathodoluminescence spectrum. The excitation spectrum is explained by employing the reflectivity data of single crystal CaS; the structure of the excitation spectrum can be assigned to the singular point in the band structure. From the excitation spectrum it is speculated that CaS has an indirect allowed transition at its band edge.
Current Peaks Observed in Polyethylene Terephthalate Films with Linearly Increasing Voltage
Authors: Miyairi Keiichi , Ieda Masayuki
Published: November 2005

The current-voltage characteristics in polyethylene terephthalate films have been investigated by applying a slowly increasing d.c. voltage and a slowly decreasing dic. voltage. Two current peans have been observed, in the case of voltage increasing, at the tempesature above 160°C in the current-voltage characteristics. The dependences of these peaks on various factors have been investigated experimentally. The results suggest that these peaks would be associated with clean up phenomena of charge carriers. An explanation based on the clean up phenomena has been given to the appearance of current peaks. The mobilities of 1.3×10-15 m2/V·s and 5×10-17 m2/V·s have been estimated for two kinds of carriers at 160°C, respectively.
Carrier Traps in Poly-p-Xylylene Films
Authors: Mizutani Teruyoshi , Ishii Kazuhiro , Takai Yoshiaki , Ieda Masayuki
Published: November 2005

The X-ray induced TSC and TL and the dielectric loss of the vapour-deposited poly-p-xylylene (PPX) film have been studied. The TSC in a PPX film with a prior X-ray irradiation showed five peaks, designated C1 to C5 and they were due to trapped carriers introduced by the X-ray irradiation. The C2 and C5 peaks corresponded to the dielectric loss peaks, the γ and β relaxations, suggesting the carrier detrapping assisted by the release of molecular motions. The C1 peak suggested the existence of a new relaxation around 120 K. There were no relaxations corresponding to the C3 and C4 peaks and carriers were considered to be thermally released from traps whose depths were 0.5–0.6 eV.
A Reflection Method of Determining Birefringence and Refractive Index in Orthorhombic Crystal
Authors: Abe Masanori , Nakagawa Hidenobu , Gomi Manabu , Nomura Shoichiro
Published: November 2005

The absolute value and the sign of the birefringence together with the principal refractive indices in orthorhombic crystals are determined by polarimetric measurement of light reflected from arbitrary and/or principal planes of the crystal. This method is applicable to crystal with a light absorption coefficient α<∼5000 cm-1. The results of its application to three orthorhombic crystals: Fe3BO6, YFeO3 and ErCrO3, at a wavelength of 0.63 µm, are described. The birefringences of Fe3BO6 along the a, b, and c crystallographic axes are found to be 10.8±0.2, -2.2±0.2, and -8.6±0.2, ×105 deg/cm respectively, which values are several times larger than those for the orthoferrite and the orthochromite.
Photoconductive Properties of Amorphous As-Se System
Authors: Onari Seinosuke , Yamamoto Kazuhiko , Kitahara Tadashi , Arai Toshihiro
Published: November 2005

The photoconductivity spectra of amorphous As
x
Se1-x
(0.3≤x≤0.5) with chopping frequencies of the illumination at 400 Hz, 16.7 Hz, and 1/60 Hz were measured and significant changes in the shape of the photoconductivity spectra was observed.
The photocurrent is composed of slow and fast decay components and the ratio of the slow decay component to the total photocurrent for various compositions of As-Se exhibits drastic increases when the photon energy is decreased passing through the optical gap.
Dependence of the photocurrent on the incident light intensity at various wavelengths shows that the transient chopping frequency from bimolecular to monomolecular recombination characteristic regions changes by about two orders of magnitude (10 Hz∼0.2 Hz) depending on the illumination wavelength.
These effects are interpreted by means of the kinetic process of the photo-excited carriers and their recombination under the assumption of the presence of gap states.
Crystallographic Observations and Electroluminescence of Liquid Phase Epitaxial AlxGa1-xP Alloys
Authors: Sonomura Hajimu , Hidaka Motoki , Nakahigashi Kiyotaka , Miyauchi Takeshi
Published: November 2005

The ternary III-V compound alloy Al
x
Ga1-x
P has been prepared by liquid phase epitaxy using GaP as substrate. X-ray topography indicates that no dislocations have been observed in the layer with a composition that is less than about 0.3, whereas in the layer with x over about 0.5, dislocations have arisen close to the surface. Peak energies of the electroluminescence from the layers have all been shorter than that of GaP. In the layer having x=0.82, the shortest wave-length of 532 nm has been obtained, which is pure green for the human eye.
The Polarization of Bremsstrahlung X-Rays Emitted from an ECR Plasma
Authors: Abe Nobuyuki , Yamamoto Takayoshi , Kawanishi Masaharu
Published: November 2005

The degree of polarization of Bremsstrahlung X-rays emitted from an ECR plasma of high electron temperature has been studied. It has been found that the X-rays emitted from the resonance zone of the plasma have a high degree of polarization and it nears unity for high energy photons. Numerical calculations on the degree of polarization have been performed with the non-relativistic and relativistic cross-sections for Bremsstrahlung. The former is in good agreement only with the X-rays from the off-resonance zone, but the latter is in good agreement with those from the resonance zone. From these calculations, it has also been found that the electron velocity distribution of the plasma produced in this study is extremely anisotropic at the resonance zone, that is, the electron temperatures perpendicular and parallel to the mirror axis are estimated to be about 500 keV and 50 keV, respectively.
Guiding of Intense Relativistic Electron Beams with an Axial Magnetic Field
Authors: Kobayashi Noriyuki , Kawasaki Sunao , Miyahara Akira
Published: November 2005

Intense relativistic electron beams guided by an axial magnetic field are investigated under some experimental conditions. The beam envelope reveals a spatially periodic structure in the uniform axial field, and the wavelength of the periodicity cannot be explained by a simple rigid rotor model, but by taking the beam deceleration due to the beam potential into consideration.
The rapid beam destruction at a hump region in the guiding field is observed and discussed.
Extension of the Two-Step Reaction Model for Thermoluminescent Response
Authors: Inabe Katsuyuki , Takeuchi Nozomu
Published: November 2005

Supralinear response is observed for thermoluminescence (TL) of several X-irradiated alkali halides such as KCl and KBr containing about 100 ppm of Sr2+ions and Cu+ions less than 10 ppm. It is shown that the simple equation previously proposed to describe the TL response of LiF TLD-100 can also account for the TL process of the other alkali halides. The transition probability (α) appearing in the equation is found to be related to the absorbed dose for saturation (Ds) as αDs=const.
Color Display of Laue Patterns with a Scanning X-Ray Beam
Authors: Yoneda Yasuharu , Horiuchi Toshihisa
Published: November 2005

Two-dimensional measurements of X-ray patterns are taken with a spectrally-colored X-ray TV by scanning an X-ray beam. At the beginning, Laue patterns are illustrated. X-ray photons diffracted in a fixed direction are detected by a solid-state detector, whose output pulses are distributed to three color channels by PHA and displayed with colored point flashes on the color CRT, i.e., information on wavelength in Laue spots is given by coloring them. The capability of this method is demonstrated by some examples such as identification of single crystals, determination of orientations and observation of wavelength distribution in a Laue spot.
A Bisection Break-Up Theory for Cluster Ions and Its Application to the Design of Mean Specific Size Controllers
Authors: Enjoji Hiroshi
Published: November 2005

The most important condition for additional heating of high temperature plasmas and refuelling of fusion reactors using energetic cluster ions is to give the proper energy to each constituent atom. This can be done by controlling their specific sizes and by accelerating the cluster ions by an appropriate voltage. A bisection break-up theory, in which cluster ions are assumed to be divided into two equal fragments by electrostatic repulsion arising from multiple ionization by electron impact is proposed for the first time. The purpose of this theory is to obtain the relation between the mean specific size and the electron current. The theory gives good agreement between the theoretical and the experimental values of the mean specific size of nitrogen cluster ions, demonstrating its applicability to the design of mean specific size controllers.
Design of SAW Filters Having Inclined and Tapered Three-Transducer Configuration
Authors: Tsukamoto Masahide
Published: November 2005

A design method for SAW filters with the inclined and tapered three-transducer (ITTT) configuration is described, in which the frequency response of the filter is expressed by an equation utilizing the δ-function model and the apodization is obtained by the least-squares method. Good results were obtained for an example of a TV-intermediate-frequency filter with a non-symmetric amplitude and a linear phase response. However, to design a non-linear phase response, the theory needs to be extended.
Magnetic After-Effect in Amorphous Tb-Fe Thin Films
Authors: Ohashi Keishi , Tsuji Hisao , Tsunashima Shigeru , Uchiyama Susumu
Published: November 2005

Magnetic after-effect in sputter deposited Tb
x
Fe1-x
(x×0.17∼0.24) films is studied. The after-effect is directly observed using polar Kerr magneto-optic effect as a slow propagation of domain walls. The velocity of the domain growth (10-4∼10-1 cm/s) changes exponentially with the applied field. The viscosity coefficient S
v≡dM/d ln t·χ-1 (χ: irreversible susceptibility), which was used in describing Jordan type after-effect, is applied to characterize the after-effect. The value of S
v (22∼110 Oe) is inversely proportional to the saturation magnetization at room temperature and decreases with rising temperature. The origin of the slow wall motion is inferred to be the random anisotropy of Tb ion rather than the oxidation of the film surface.
Studies on Magnetic Domains of Small Particles of Barium Ferrite by Colloid-SEM Method
Authors: Goto Kimiyoshi , Ito Mikihiko , Sakurai Tomoaki
Published: November 2005

Magnetic domains of barium ferrite particles less than 10 to 1 µm in size which are on surfaces of as-sintered blocks have been observed by colloid-SEM method, a modified Bitter method, with magnifications from 20000 to 45000. The number of domains in a particle decreases with reduction of particle size on average. Below about 2 µm in size each particle comprises two domains. It is shown that domain structure of the two-domain particle is plate-like, and the particle shape is found to be a double hexagonal pyramid with c-plane approximately. A single-domain particle 1.3 µm in size has been observed successfully. The possibility of the twisted domain wall in small multidomain particles is suggested from the obtained patterns of the magnetite powders.
Noise in Non-Linear Resistors
Authors: Takagi Keiji
Published: November 2005

A more general formula is derived for noise evaluation in non-linear resistors. We here apply it to two aspects of the SCL diode; the thermal noise in a low electric field and the hot carrier noise in a high electric field. The result shows that the noise increases in proportion to the square root of the conducting current in the low field and to the 5/3 power of the current in the high field. These results are confirmed experimentally in laboratory-made SCL diodes.
Extended AC Conductance–Bias Method Considering Semiconductor Conductance and Capacitance in MOS Structure
Authors: Warashina Masatoshi , Ushirokawa Akio , Ohnishi Kazunori
Published: November 2005

The influence of the semiconductor conductance G
s and the interface trap conductance G
p on MOS ac conductance is revealed in all bias regions from inversion to accumulation in the high frequency range, for example, 1 kHz-1 MHz. The conductance–bias (G-V) method is extended considerably in order to clarify the interface state characteristics more easily. Under the bias conditions of accumulation and weak inversion, the measured results are successfully explained by the newly-introduced semiconductor conductance G
s. The conductance curve of the interface and oxide traps with respect to the semiconductor capacitance C
s shows a peak in the depletion region. The semiconductor conductance curve with respect to C
s is linear in the accumulation region.
Computer Simulation of Ion Beam Extraction by Finite Element Method
Authors: Mori Masahiro , Nakamura Tomoaki , Inoue Nobuyuki , Uchida Taijiro
Published: November 2005

A simulation code of the ion beam extraction from a plasma is described. It treats 2-D problems, and the finite element method (FEM) is adopted for the computation of potential distribution with good accuracy. In accel-decel type one-stage extraction, the relations among the divergence angle and extracting conditions, and the optimum extracting conditions, are obtained. By accel-accel-decel type two-stage extraction, an ion beam of higher energy is extracted with small divergence angle. Improvement with precel is also examined. But in this case a large bias voltage can not be applied because of the large heat load of the positive electrode and electrical breakdown. One method which avoids these shortcomings is to insert one more electrode between the plasma and the positive electrode. The characteristics of this configuration are examined.
Compression System in ERA of IPP-Japan. II. Experimental Result
Authors: Kobayashi Noriyuki , Kubota Yusuke , Kawasaki Sunao , Miyahara Akira
Published: November 2005

During the adiabatic compression of an electron ring, negative mass instabilities have been observed. To interpret these experimental results, the pillbox model is applied to the closed cylindrical structure of the vacuum chamber, and the effects of the self-fields of the electron ring and beam loading are considered. Using such a model we can explain the experimental results.
Assessment of Radiographic Granularity by a Single Number
Authors: Uchida Suguru , Fujita Hiroshi
Published: November 2005

The granularity of radiographic screen-film systems is assessed by a single number in terms of the entropy method. This method is evaluation on the basis of the precision of measurements, and in the present paper the precision is directly related to radiographic granularity which refers to both RMS granularity (the standard deviation of density fluctuations) and film contrast (the gradient of H & D curve). From the results of entropy calculations, the ability of transmission of radiographic images in two screen-film systems is obtained by comparing the values of transmitted information or the relative efficiency of transmission.
Chemical Analysis of Surface by Fluorescent X-Ray Spectroscopy Using RHEED-SSD Method
Authors: Ino Shozo , Ichikawa Toshihiro , Okada Shozo
Published: November 2005

A new RHEED apparatus combined with a Si(Li) solid-state detector has been constructed, and spectroscopy of fluorescent X-rays emitted during RHEED observation has been carried out using the detector. Preliminary measurements have revealed the usefulness of this apparatus both for chemical analysis of surfaces and for investigating the behaviour of incident electrons in surface layers. When Ag thin films evaporated on a clean Si(111) surface were studied, the smallest detectable amount was about 0.02 Å in mean thickness. The penetration depth of the primary electron beam in the Ag film at an accelerating voltage of 20 kV was estimated to be 33.0 Å from analysis of the intensity of AgLα and AgLβ lines with increasing thickness of the Ag films.
A.C. Characteristics of the Electroviscous Effect
Authors: Honda Tsutomu , Kurosawa Kaoru , Sasada Tadashi
Published: November 2005

The pressure-drop fluctuations induced by the application of an A.C. electric field perpendicular to the flow direction of various dielectric liquids were observed by means of a pressure gauge.
In the low-frequency range, the pressure-drop fluctuates periodically, while a phase difference is observed which depends on the A.C. field frequency. The pressure-drop also fluctuates periodically in the high-frequency range but no phase difference is observed.
These different properties are attributed to a difference in the conduction process, i.e., injections in the low-frequency range and electrolytic dissociations in the high-frequency range. In both ranges, pressure-drop fluctuations result from the disturbance of the mean flow caused by electroconvection.
Influence of Pressure and Solutes on Ferroelectricity of Chiral Smectic Liquid Crystal
Authors: Uemoto Tsutomu , Yoshino Katsumi , Inuishi Yoshio
Published: November 2005

The phase transition temperature from the smectic-A to chiral smectic-C (ferroelectric) phases in DOBAMBC decreases significantly with mixing of organic materials (PAA and eicosane) but increases with applied pressure (<400 bar). The dielectric constant in the ferroelectric chiral smectic-C phase decreases with increasing concentration of organic materials but does not depend strongly on applied pressure in the range studied. These results are explained in terms of the intermolecular interaction of DOBAMBC molecules.
Bandgap Energy of InGaAsP Quaternary Alloy
Authors: Yamazoe Yoshimitsu , Nishino Taneo , Hamakawa Yoshihiro , Kariya Tetsuya
Published: November 2005

The bandgap energy of InGaAsP quaternary alloy lattice-matched to InP has been precisely determined by electroreflectance (ER) measurements. The ER spectra show the typical low-field ER lineshape over the whole alloy composition range, and this has enabled us to determine the precise bandgap energy of the InGaAsP alloy easily. It was found that the bandgap energy E
g of the In1-x
Ga
x
As
y
P1-y
alloy lattice-matched to InP is written as E

g
=1.35-0.738·y+0.138·y
2 at room temperature as a function of the As composition y. We have also measured the photoluminescence spectra of the InGaAsP samples, and found that the peak energy of the photoluminescence spectrum, which is frequently used as a measure of the bandgap energy, is slightly different from the precise bandgap energy determined by ER measurements.
Computer Simulation of Nonlinear Propagation Characteristics of CO2 Laser Pulse
Authors: Daido Hiroyuki , Okehara Junyoshi , Ido Shunji , Matoba Masafumi , Nakai Sadao , Yamanaka Chiyoe
Published: November 2005

The characteristics of pulse propagation through the CO2 laser system LEKKO II are analysed numerically using a MELCOM COSMO 700 II digital computer. The amplifiers are treated with a Frantz and Nodvik type rate equation model, and the SF6 saturable absorbers are treated with a phenomenological model based on the measurement of energy transmission. The computed results are compared with the observed data on the pulse energy, the rise time of the pulse and the pulse duration (FWHM). It is found that the pulse peak is delayed when the incident pulse energy is relatively small because of the nonlinear absorption chracteristics of SF6; but proceeds effectively when the incident pulse energy is relatively large because of the nonlinear amplification characteristics of CO2 lasers.
Visible-Light-Emitting TS Lasers
Authors: Wada Masaru , Itoh Kunio , Sugino Takashi , Shimizu Hirokazu , Teramoto Iwao
Published: November 2005

Some characteristics of (GaAl)As TS (Terraced Substrate) lasers which emit visible radiation are reported. The threshold current density is found to depend little on the lasing wavelength down to 740 nm. The lasers exhibit a stable, single longitudinal mode oscillation with no kinks in the output-current curves over a wide range.
Laser Action of Ionized and Neutral Atomic Lines in Electron-Beam-Produced Rare Gas Plasmas
Authors: Ono Kouichi
Published: November 2005

Rare gas plasmas (He through Xe) were produced by a short-pulsed, high-current electron beam (600 kV, 10 kA peak, 3 ns FWHM) in a drift tube without external field over a wide pressure range (0.1∼80 Torr). The emission spectra of the plasmas were observed between 2500 and 8500Å with a spectrograph and bandpass filters from both end- and side-views. Self-terminating laser emissions (3 ns FWHM, 10∼400 W peak) travelling along with the electron-beam pulse were found for 20 spectral lines of singly-ionized and neutral Ne, Ar, Kr, and Xe atoms through the end window of the drift tube, and the small-signal gain coefficients were measured. The temporal behaviours of the emission intensity were measured for the laser lines and for many other spontaneous lines through the side window, and the atomic processes of the laser excitations were examined.