num_pages: 505
description: A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, * An introductory chapter on the basic properties, growth process, and device physics of III-V materials* Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design* A discussion of transistor fabrication and device comparison* 55 worked-out examples illustrating design considerations for a given application* 215 figures and end-of-chapter practice problems* Appendices listing parameters for various materials and transistor types
language: English
title: Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs
titlecomplete: Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs
ratings_count: 7
publisher: Wiley-Interscience