Patent claim: The method according to claim 10 characterized in that the step of forming a top electrode layer 1240 includes forming at least one layer selected from a group consisting of zinc oxide ZnO indium tin oxide ITO borondoped zinc oxide BZnO aluminumdoped zinc oxide AlZnO galliumdoped zinc oxide GaZnO and antimony tin oxide ATO.

Related passage: A preferred type of Group 1a1b3a6a material is a CIGS material.A preferred method of the present invention comprises a method for preparing a CIGS material comprising providing a substrate providing a seleniumGroup 1b ink of the present invention wherein the Group 1b component comprises copper optionally providing an indium source optionally providing a gallium source optionally providing a sulfur source and optionally providing a selenium source forming at least one CIGS precursor layer on the substrate by depositing copper and selenium on the substrate using the seleniumGroup 1b ink of the present invention optionally depositing an indium material on the substrate using the indium source optionally depositing a gallium material on the substrate using the gallium source optionally depositing a sulfur material on the substrate using the sulfur source and optionally depositing a selenium material on the substrate using the selenium source treating the at least one CIGS precursor layer to form a CIGS material having a formula CuvlnwGaxSeySz wherein 0.5v1.5 preferably 0.85v0.95 0w1 preferably 0.68w0.75 more preferably w is 0.7 0x1 preferably 0.25x0.32 more preferably x is 0.3 0 lt y2.5 and 0z lt 2.5.Preferably wx1 and 1.8yz2.5.More preferably the CIGS material prepared has a formula CuIn1bGabSe2cSc wherein 0b1 and 0c lt 2.The components of the CIGS precursor layers can be treated by known methods to form the CIGS material having formula CuvInwGaxSySez.When multiple CIGS precursor layers are applied the layers can be treated individually or in various combinations.For example a seleniumGroup 1b ink of the present invention and at least one of an indium source and a gallium source can be sequentially or codeposited on a substrate to form a CIGS precursor layer followed by heating of the precursor layer to a temperature of 200 to 650C for 0.5 to 60 minutes followed by deposition onto the substrate of another CIGS precursor layer using more seleniumGroup 1b ink of the present invention and at least one of an indium source and a gallium source followed by heating to a temperature of 200 to 650C for 0.5 to 60 minutes.In another approach the components ofthe CIGS precursor layers are all applied to the substrate before annealing.Annealing temperatures can range from 200 to 650C with annealing times of 0.5 to 60 minutes.Optionally additional selenium can be introduced during the annealing process in the form of at least one of selenium ink selenium powder and hydrogen selenide gas.The CIGS precursor layers can optionally be heated to the annealing temperature by use of a rapid thermal processing protocol such as with the use of a highpowered quartz lamp a laser or microwave heating methods.The CIGS precursor layers can optionally be heated to the annealing temperature using traditional heating methods for example in a furnace.