Patent claim: Sample P for microstructural materials diagnostics especially for transmission electron microscopy examinations for scanning electron microscopy for transmission electronbackscatter diffraction for Rutherford backscatter diffraction for elastic recoil detection analysis for Xray absorption spectroscopy or for Xray diffraction comprising a basic structure 3 with a supported structure 4 being supported by a supporting structure 5 preferably a cantilever beam 4 which is supported at least at one of its both ends preferably at both of its ends 4a 4b by the supporting structure 5 the supporting structure 5 being configured to be held preferably clamped by a jig 6 wherein the supported structure 4 is thinned at least in sections on its surface preferably on at least one of its lateral faces andor its front faces 4e 4f preferably on two opposing ones 4c 4d of its lateral faces by introducing at least one preferably several channel structures 7a 7b...into the surface of the supported structure 4 preferably into the at least one of the lateral faces andor of the front faces 4e4f of the supported structure 4 preferably into the two opposing lateral faces 4c 4d of the supported structure 4 such that the longitudinal direction D of the channel structures 7a 7b...isare aligned perpendicular to the longitudinal extension L of the supported structure 4 wherein preferably the thinned sections of the supported structure 4 preferably a remaining section or remaining sections 8a 8b...which remained after the thinning between two channel structures 7a1 7a2 7b1 7b2...introduced into the two opposing lateral faces 4c 4d of the supported structure 4 and opposing each other hashave a minimum thickness dmin perpendicular to the substratesplane 1a of the supported structure 4 which is including the limits between 05 m and 50 m preferably between 5 m and 20 m.

Related passage: In preparing the lamella 100 ref.Figures 3a to 3c an ion beam indicated by an arrow I1 is irradiated onto oneof the flat sides 101 of the substrate e.g.under a low angle of 1 to 3 to the surface and the substrate material is removed in a strip of e.g.15 m width W and a depth T of almost half the substrate thickness D.In the example the recess 102 is made to extend over the entire length of the substrate in other embodiments the removing process is stopped before the longitudinal extension of the recess 102 reaches the rim 106 of the substrate on the opposite side.At that position e.g.a lamella protection layer 108 can be positioned.After completing the first recess 102 the support 16 is rotated together with the insert 83 of the lamella support 77.Because its longitudinal axis 91 is inclined to the vertical direction the lamella support 77 tilts at a certain rotational position namely when the transverse axis 85 is positioned in a vertical plane into the opposing pivot position and thereby pivots the supported substrate 100 such that same disposes its other flat side 103 to the ion beam source and does so in a different angular orientation.Subsequently on the other flat side 103 of the substrate a second striplike recess 104 is manufactured in a similar manner as the first.Because of the tilting of the lamella support 77 between the two manufacturing steps the guidance of the ion beam need not be changed nevertheless the backside recess 104 is made at an angle W with respect to the frontside recess 102.In the embodiment of Figures 5a and 5b the one recess 102b is made approximately parallel to an existing lamella protection layer 108b and the other recess 104b is made approximately perpendicular thereto i.e.at an about right angle W and thereby between those substrate rims 106b not transected by the first recess 102b.In other embodiments according to Figure 4 both recesses 102a 104a are made between the same substrate rims 106a but under angles S opposed to one another which oblique angles S are not necessarily but suitably of equal size.The minimal value for the edgeangle S and thereby the maximal value for the intersection angle W follows from the ratio of height H to length L of the substrate 100 taking into account the width B of the recess.In this embodiment an almost right angle W between the two recesses 102a is 104a achieved so that an almost quadratic relatively large area central region A results.As particularly well discernible from Figure 3b in the embodiments shown with recesses 102 104 of equal depth the rim portion R is everywhere at least half as thick as the substrate.