Patent DE-102006002903-A1 (DE)
Title: Treatment of oxygen-containing semiconductor wafer, comprises irradiating second side of wafer with high-energy particles to produce crystal defects in second semiconductor region of wafer, and heating wafer
Inventor: SCHULZE HANS-JOACHIM
IPC: H01L29/739
Filed: 2006-01-20
Abstract: The treatment of an oxygen-containing semiconductor wafer (100), comprises irradiating a second side (102) of the wafer with non-doping high energy particles with different irradiation energy to produce crystal defects in a second semiconductor region (104') of the wafer, and first heating of the wafer at 790-810[deg]C for 5 hours and at 985-1015[deg]C for 20 hours. The non-doping particles are protons, helium ions, neon ions, argon ions, silicon ions, germanium ions or krypton ions. The implantation dose of the protons is 1 x 10 13> cm -2> and 1 x 10 15> cm -2>. The treatment of an oxygen-containing semiconductor wafer (100) comprises irradiating a second side (102) of the wafer with non-doping high energy particles with different irradiation energy to produce crystal defects in a second semiconductor region (104') of the wafer, and first heating of the wafer at 790-810[deg]C for 5 hours and at 985-1015[deg]C for 20 hours. The non-doping particles are protons, helium ions, neon ions, argon ions, silicon ions, germanium ions or krypton ions. The implantation dose of the protons is 1 x 10 13> cm -2> and 1 x 10 15> cm -2>. Before irradiating the second side, the wafer is heated secondly at more than 1000[deg]C and damp- and/or oxidizing atmosphere is set out at the first side of the wafer. Before irradiating the second side, trenches are produced, which extend from the second side into the wafer and which are filled up with filler materials before carrying out the first heating process. The wafer exhibits a first side (101) and a first semiconductor region (103') connected to the first side. The second semiconductor region is connected to the second side and the second side is opposite to the first side. After or before carrying out the first heating, the first semiconductor region is heated thirdly in such a way that oxygen atoms are diffused out from the first semiconductor region over the first side. After carrying out the second heating, for the production of an n-doped semiconductor zone in the first semiconductor region, the wafer is radiated with proton irradiation to develop crystal defects in the first semiconductor region and is heated fourthly in the area of the first side at 450-550[deg]C for 1-10 hours, so that hydrogen-induced donors develop. The wafer exhibits n-base doping before the treatment. On the first side of the wafer, an isolation layer (302) is applied and on the isolation layer, a semiconductor layer is applied. For the production of a silicon-on-insulator (SOI)-substrate, oxygen atoms are implanted into the first semiconductor range after carrying out the first heating process. The duration and the temperature of the heating process is selected in such a way that the n-doped semiconductor region (105) in vertical direction of the semiconductor body shows homogeneous doping over 80% of their vertical expansion produced by the proton irradiation. Independent claims are included for the following: (1) the production of a silicon on insulator (SOI)-substrate; and (2) a vertical power semiconductor element.