Patent SG-11201900321Q-A (SG)
Title: High purity ethylenediamine for semiconductor applications
Inventor: THRIDANDAM HAREESH
IPC: C07C211/10
Filed: 2017-07-20
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property MD 1101111 0 DOI HIM 011101 0 0111111111111H1111111111111111111111111111111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/017830 Al 25 January 2018 (25.01.2018) WI P0 I P C T (51) International Patent Classification: Declarations under Rule 4.17: C07C 211/10 (2006.01) C07C 20 9 / 8 4 (2006.01) — as to applicant's entitlement to apply for and be granted a (21) International Application Number: patent (Rule 4.1700) PCT/US2017/043064 Published: (22) International Filing Date: — with international search report (Art. 21(3)) 20 July 2017 (20.07.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/364,959 21 July 2016 (21.07.2016) US 15/649,271 13 July 2017 (13.07.2017) US (71) Applicant: VERSUM MATERIALS US, LLC [US/US]; 8555 S. River Parkway, Tempe, AZ 85284 (US). (72) Inventors: THRIDANDAM, Hareesh; 2561 Discovery Road, Carlsbad, CA 92009 (US). DIMOCK, Stuart, H.; 24144 Grayston Drive, Lake Forest, CA 92630 (US). MAY- — ORGA, Steven, Gerard; 3719 Via Del Rancho, Oceanside, CA 92056 (US). PEARLSTEIN, Ronald, Martin; 1156 — Glen Ellen Place, San Marcos, CA 92078 (US). = Agent: ROSSI, Joseph, D. et al.; Stradley Ronon Stevens = (74) & Young, LLP, 30 Valley Stream Parkway, Great Valley _ = Corporate Center, Malvern, PA 19355 (US). Designated States (unless otherwise indicated, for every (81) kind of national protection available): AE, AG, AL, AM, _ AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, _ — CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, = = = = OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, _ = TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. Designated States (unless otherwise indicated, for every (84) = kind of regional protection available): ARIPO (BW, GH, = GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, = UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, — TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, = EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, — 1-1 KM, ML, MR, NE, SN, TD, TG). © M GC Ir ... ' ,-1 (54) Title: HIGH PURITY ETHYLENEDIAMINE FOR SEMICONDUCTOR APPLICATIONS ---- (57) : Ethylenediamine (EDA) compositions and methods for making the EDA that is suitable for use in thin-film semicon- GC ,_ 1 ductor processing applications, are disclosed. The EDA is purified to remove water and trace metals. Water levels below about 50 0 ppm by weight are achieved by passing liquid through 3A type molecular sieve in a packed bed. Metallic impurities are removed by N distillation and the resulting product is packaged in specially dried and optionally pre-conditioned containers. C