baber/WOPTO huggingface dataset:
Patent TW-350062-B (TW)
Title: LCD drive method
Inventor: NOMURA HIROAKI
IPC: G09G3/36
Filed: 1997-08-13
Granted: 1999-01-11
Abstract: A sort of LCD drive method, a driving method of LCD device formed by holding between a pair of opposite substrates, having said LCD layer having at least the initial status of the turning angle of the liquid crystal molecule, which is arranged in <phi> -180 DEG as the first stable condition and the second stable condition where said liquid crystal molecule is arranged in <phi> +180 DEG, a plurality of scanning electrode scanning signals being added into one substrate and a plurality of signal electrodes being added into another substrate forming a plurality of signal electrodes, for controlling said liquid crystal layer arrangement, said scanning signals, having at least the reset pulse wave for adding into the reset period and the selection pulse wave being added into the selection period, for selection of said scanning electrode when said data signal being fed to said signal electrode, for the plurality of scanning electrodes being plurality of groups, where the scanning electrodes being added almost at the same time into said scanning signal, for sequential selection of the plurality of groups.
Patent TW-351861-B (TW)
Title: Semiconductor device and manufacturing process thereof
Inventor: IGARASHI MOTOSHIGE
IPC: H01L29/49
Filed: 1997-09-27
Granted: 1999-02-01
Abstract: A semiconductor device comprises at least: a first conductive layer deposited on a main surface of a semiconductor substrate with a first width including a first concentration of a doped material; and a second conductive layer formed on the top of the first conductive layer with a second width differing form the first width and a second concentration of doped material different from the first doped material. Having a symmetrical cross sectional gate electrode.
Patent TW-349317-B (TW)
Title: Piezoelectric sounding device
Inventor: SENOO MASAO
IPC: H04R17/00
Filed: 1997-09-30
Granted: 1999-01-01
Abstract: A piezoelectric sounding device, mainly comprising a piezoelectric vibrator formed by connecting a piezoelectric ceramic element on a metallic vibration plate being disposed in a case, the both sides of the piezoelectric vibrator being formed with a front air chamber and a rear air chamber; which is characterized in installing a cylinder the interior of which having a passage located on the front air chamber side and constituting a portion of the front air chamber with the side wall portion of the case opposite to the piezoelectric vibrator.
Patent TW-346655-B (TW)
Title: Semiconductor device and process for making the same
Inventor: MATUSHITA SHIGEMI
IPC: H01L21/311
Filed: 1997-10-06
Granted: 1998-12-01
Abstract: A semiconductor device comprising: a semiconductor substrate including the defined layers and having a convex region covering the gate region; a protective film formed on the convex region excluding the gate region; thereby, the end edge of the protective film in the width direction of the gate is at least positioned at a same position or inside the end edge of the convex region.
Patent TW-347368-B (TW)
Title: Method of making a catalytic converter for use in an internal combustion engine
Inventor: PAUL SAMUEL SCHMITT
IPC: B01D53/86
Filed: 1997-10-23
Granted: 1998-12-11
Abstract: A method of manufacturing a catalytic converter for purifying exhaust from an internal combustion engine, the converter having a monolithic ceramic substrate surrounded by a supporting mat and located within a housing, comprising the following steps: forming a cylinder metal shell having an inner surface and an outer surface and exhibiting a uniform curvature on each surface and having a lap joint exhibiting substantially the same curvature as the outer surface of the metal shell; wrapping the substrate in a sufficient amount of supporting mat material and inserting the wrapped substrate into the metal shell; compressive closing the metal shell around the wrapped substrate thereby creating a substantially uniform compressive stress on the substrate by the supporting mat; and fastening the inner surface of the lap joint to the outer surface of the outside metal shell to form a hermetic sealing and maintain a compressive force.
Patent TW-557386-B (TW)
Title: Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
Inventor: ANGELOPOULOS MARIE
IPC: G02F1/13
Filed: 1998-05-07
Granted: 2003-10-11
Abstract: Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described. Liquid crystal display cells are described having at least one of the electrodes providing a bias across the liquid crystal material formed from a patterned electrically conductive polymer. Thin film transistors having patterned electrically conductive polymers as source drain and gate electrodes are described. Light emitting diodes having anode and coated regions formed from patterned electrically conductive polymers are described. Methods of patterning using a resist mask, patterning using a patterned metal layer; patterning the metal layer using a resist; and patterning the electrically conductive polymer directly to form electrodes and anode and cathode regions are described.
Patent TW-363267-B (TW)
Title: Method of fabricating semiconductor device
Inventor: KIM JAE-KAP
IPC: H01L21/8234
Filed: 1997-12-10
Granted: 1999-07-01
Abstract: A method of fabricating a semiconductor device having high-voltage and low-voltage transistors on a single semiconductor substrate, the method comprising the steps of: forming layers for isolation of high-voltage and low-voltage transistor regions on the first conductive semiconductor substrate; forming gate insulating layers and gate electrode layer all over the surface of the semiconductor substrate in serial order; forming a mask used for ion implantation on the gate electrode layer of the high-voltage transistor region to expose the gate electrode layer of the low-voltage transistor region; implanting a second conductive impurity in the exposed gate electrode layer of the low-voltage transistor region; removing the mask for ion implantation; patterning the gate electrode layer and gate insulating layers to form gate electrodes in each transistor region; and implanting a second conductive impurity in all the surface of the semiconductor substrate including the gate electrodes to form source-drain regions on the semiconductor substrate at both sides of the respective gate electrodes.
Patent TW-391014-B (TW)
Title: Resistive body for current detection and the component installed in vehicle
Inventor: SUEOKA TOSHIAKI
IPC: G01R1/20
Filed: 1997-12-23
Granted: 2000-05-21
Abstract: The purpose of this invention is to provide an instrument, which is going to be used in flasher component and so on, that consists of resistive part for load current detection and the exterior contact connector. The load current detection resistive part and the exterior contact connector that is electrically connected with the other connector are built together to reduce the number of component used and reduce its cost. As shown in figure 1, the current detection resistive body 2 is manufactured from the pressed plate of nickel-copper alloy. The contact connector 21 and the resist part 22 are built together to form the current detection resistive body 2. The contact connector 21 is formed as for example flat-type male connector exterior to the flasher component 1 and is going to electrically connect to the female connector of the vehicle side. Therefore, a load current of flashing light and so on is flowing on the resistive port 22 such that a voltage drop proportional to the flowing current is generated between two ends of the resist part.
Patent TW-396202-B (TW)
Title: Buffered organic acid compositions for cleaning or chemical mechanical polishing
Inventor: SMALL ROBERT J
IPC: C11D3/30
Filed: 1998-02-12
Granted: 2000-07-01
Abstract: A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, dysfunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine salt, hydrazine or hydrazino salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper surface comprises applying the above composition to the copper surface, and polishing the surface in the presence of the composition.
Patent TW-430702-B (TW)
Title: Separating roller for unravelling fibers on an open-end spinning machine, and method of producing a card-clothing wire pre-shaped in a helical form
Inventor: HOFMANN EBERHARD
IPC: D01H4/32
Filed: 1998-02-27
Granted: 2001-04-21
Abstract: For a separating roller which is used for unraveling fibres on an open-end spinning machine, it is proposed that the card-clothing wire is deformed and coated before it is wound up on the separating roller. In this way, it is possible to use separating rollers of widely differing materials, since they are not subjected to the coating porcess themselves. In addition, it is provided that the card-clothing wire is already pre-formed into a helical shape before the fitting of the separating roller. Furthermore, a method of producing a card-clothing wire used for the invention is proposed. In this case, for the coating procedure, the pre-formed coils are held at a distance from one another during the coating.
Patent TW-492241-B (TW)
Title: Pre-dialing method of telephone and dialer with pre-dialing function
Inventor: LIN HUNG-YAN
IPC: H04M1/26
Filed: 1998-03-07
Granted: 2002-06-21
Abstract: The invention provides a pre-dialing method of telephone and dialer with pre-dialing function, allowing telephone to edit telephone number under the on-hook state and dial up the edited telephone number under the off-hook state.
Patent TW-442851-B (TW)
Title: Improved magnet design for a sputtering chamber
Inventor: HOFMANN RALF
IPC: H01L21/203
Filed: 1998-04-22
Granted: 2001-06-23
Abstract: In order to improve the uniformity of erosion of a sputtering chamber target during sputtering, and to prevent redeposition of target material onto the target surface, the size and shape of the magnet pair above the target is chosen to maximize uniform erosion across the surface of the target. Redeposition of target material onto the target is particularly a problem during plasma, high pressure sputtering. The magnets of the invention have a curved, single turn, open ended shape wherein the open ends are thicker than the middle.
Patent TW-379445-B (TW)
Title: Method of manufacturing capacitors for DRAMs
Inventor: WU SHIE-LIN
IPC: H01L27/108
Filed: 1998-06-12
Granted: 2000-01-11
Abstract: The present invention uses a highly selective etching between boron phosphorous silicon glass and silicon deoxide as bottom storage electrode for the capacitor. First forming contact vent on the semiconductor substrate and then depositing a polysilicon layer in the contact vent for forming plug. And on the plug reciprocating deposition of a set of compound layer that is formed by boron phophrous silicon glass and silicon oxide layer, and then etching the compound layer. Next etching the boron phosphorous silicon glass in a highly selective etching order and along the compound layer, substrate and the surface of the plug, and forming the second polysilicon layer. On the second polysilicon layer, forming a self-spinning glass, followed by using chemical-mechanical polishing for removing part of the self-spin glass from the surface of the compound layer and the second polysilicon layer. After removing the remaining self-spinning glass and the second polysilicon layer are formed. Finally, along the surface of the dielectric layer, forming the third polysilicon layer, thus forming a plurality of horizontal finger-shaped indicators and vertical trunk-shaped capacitors.
Patent TW-412712-B (TW)
Title: A new information system to be applied to a passenger carrying vehicles
Inventor: GARCIA ALVAREZ ALBERTO
IPC: G09F27/00
Filed: 1998-07-29
Granted: 2000-11-21
Abstract: A new information system to be applied to passenger carrying vehicles, formed starting from the association with a computer 1, of a TV tuned card 3, an omnidirectional radio antenna 4, a radio tuned card 5. An omnidirectional radio antenna 6, a sound card 2, a GPS 7, a cellular phone 8 related to a modem 9, a video reproducer 10, a mass storage medium 11, a VGA/PAL converter card 12, and some control interfaces 13, providing a video signal to some video monitors 14 and some audio monitors 16, distributed among the passengers demanding the system services via tactile displays 17, optionally integrated in the video monitors 14.
Patent TW-518343-B (TW)
Title: Graft copolymer emulsions and two-package waterborne urethane coatings
Inventor: BRUYLANTS PETER PAUL
IPC: C08G18/63
Filed: 1998-09-08
Granted: 2003-01-21
Abstract: The invention concerns a graft copolymer emulsion which is anionically stabilized and which contains an amino-functional monomer. The graft copolymer, useful in a coating composition, has a weight average molecular weight of at least about 3,000 and comprises 20 to 95 weight percent of a polymer backbone and 5 to 80 weight percent of a macromonomer. The polymer backbone further comprises 0.5 to 30 weight percent of an amino-functional monomer and the macromonomer comprises at least about 5 weight percent of an unsaturated acid-functional monomer.
Patent TW-442400-B (TW)
Title: A printhead and a method of manufacture thereof
Inventor: MACLEOD CHERYL A
IPC: B41J2/14
Filed: 1998-07-30
Granted: 2001-06-23
Abstract: Islands (301) of barrier layer (213) material of an inkjet printhead are disposed between an ink source and the ink feed channels leading to the ink firing chambers to filter particles in the ink. Dimensions of the ink feed channels and ink ejecting orifices have been reduced in size and the thickness of the barrier layer has been made thinner. The nominal size of the filter pores is less than the barrier layer thickness while the width of the ink feed channels and the bore diameter of the orifices is larger than the barrier layer thickness.
Patent TW-387128-B (TW)
Title: Semiconductor device
Inventor: SASAKI MIKI
IPC: H01L23/00
Filed: 1998-08-20
Granted: 2000-04-11
Abstract: The present invention enables reduction in size of crack scraps generated by cracking at the time of dicing in a semiconductor memory. For example, at the same time as with the formation of a gate electrode 13 of a selective transistor, a gate oxide film 14, a polysilicon film 15, a Wsi film 16 and a SiN film 17 are stacked on a main surface of a wafer 10 in a region 10b corresponding to a dicing line 2. Then, these films are patterned to form a single dummy pattern 18, having substantially the same wiring structure as the gate electrode 13 in parallel to the dicing direction between element isolation regions 12. Through this dummy pattern 18, dishing is prevented as well as concentration of stresses at the time of dicing is dispersed, thereby reducing the micro-sized crack scraps.
Patent TW-449934-B (TW)
Title: Manufacturing method of CMOS sensor
Inventor: JUO MAU-SHING
IPC: H01L31/119
Filed: 1998-08-25
Granted: 2001-08-11
Abstract: There is provided a manufacturing method of CMOS sensor, which comprises: first, providing a P-type silicon substrate having a normal device region and a photo-sensing region. Next, performing a first photolithography, an ion implantation and an annealing step, and implanting five-valence impurities to form a N+ silicon doped region. Then, forming a field oxide layer on the edge of the N+ silicon doped region. Next, performing a second photolithography, an ion implantation and an annealing step, and implanting three-valence impurities to form a P+ silicon doped region in the N+ silicon doped region, wherein the contacted portion of the two silicon doped regions forms a depletion region; and performing an ion implantation step for the starting voltage of the normal device region and the N-type lightly doped drain region. The present invention is characterized in providing a non-self-alignment and using a mask to cover the N+ silicon doped region, the P+ silicon doped region and the depletion region so that the depletion region of the photo-sensing region is not decreased due to the implantation of ions, thereby increasing the sensitivity of the photo-sensing region.
Patent TW-413942-B (TW)
Title: Manufacture method of non-volatile memory
Inventor: CHEN YAN-JANG
IPC: H01L27/115
Filed: 1998-09-02
Granted: 2000-12-01
Abstract: First, at least form a gate structure upon a substrate and proceed the first ion implantation process to make the drain of the memory cell. Second, form the sidewall spacer of the gate and proceed the second ion implantation process to make the source of the memory cell. This invention uses the spacer width to increase the device density without changing the channel length. Besides, the angle of ion implantation is reduced to decrease the dopant concentration and reduce the drain leakage current.
Patent TW-390791-B (TW)
Title: Gel-like feed for aquatic animals
Inventor: KURZINGER HUBERT
IPC: A23K40/00
Filed: 1998-09-04
Granted: 2000-05-21
Abstract: The subject of the invention is a gel-like feed for aquatic animals, especially fish, shrimps and invertebrates, in fresh and sea water, usable as replacement of frost feed for the nutrition of warm and cold water ornamental fish in an aquarium. An ornamental fish feed is preferred which contains 0.0001-50% of gel former, 0.1-90% of natural feed and, a depending upon the purpose of use, further additives, in the case of a water content of 20-99%. A feed is especially preferred which contains 0.1-10% of gel former, 1-20% of natural feed and, depending upon the purpose of use, further additives in the case of a water content of 50-99%.
Patent TW-441041-B (TW)
Title: Flash memory structure and its forming method
Inventor: LIN YA-FEN
IPC: H01L21/8247
Filed: 1998-09-22
Granted: 2001-06-16
Abstract: The present invention provides a flash memory structure and its forming method to eliminate the limitation of shrinking the dimension in the traditional structure, and increase the efficiency of the programming and erasing procedure of memory cells. The structure of flash memory includes: the first oxide layer, a floating gate, gate inter-layer dielectrics, the control gate, and source region and drain region. The first oxide layer is located on the substrate; the floating gate is located at part of the first oxide layer, at least one end of the floating gate protrudes upwards; the gate inter-layer dielectrics is formed on the first oxide layer and the floating gate; the control gate is located on the gate inter-layer dielectrics, the control gate covers one side of the protruded end of the floating gate, there is an extended portion of the control gate which extends to part of the region other than the floating gate; the source region and drain region are formed in the substrate.
Patent TW-472049-B (TW)
Title: Process for producing a substituted alkylamine or a salt thereof
Inventor: UMEZU KAZUTO
IPC: C07D277/64
Filed: 1998-09-25
Granted: 2002-01-11
Abstract: The present invention provides a process for producing a substituted alkylamine represented by the following general formula (3), or a salt thereof, which process comprises reacting a 2- aminothiophenol derivative metal salt represented by the following general formula (1), with an amino acid-N-carboxy anhydride represented by the following general formula (2), and -then subjecting the reaction product to cyclization under an acidic condition. According to the present invention, a substituted aikylamine typified by 1-(2-benzothiazolyl) alkylamine, or a salt thereof can be produced from a 2-aminothiophenol derivative industrially at a high handling-ability at a high yield; even when the intended substituted alkylamine is an optically active compound, the intended product can be produced without reducing the optical purity of optically active raw material.
Patent TW-453878-B (TW)
Title: Pharmaceutical composition for removing bile salts
Inventor: HUVAL CHAD CORI
IPC: A61K31/785
Filed: 1998-11-03
Granted: 2001-09-11
Abstract: A pharmaceutical composition for removing bile salts comprising a therapeutically effective amount of a polydiallylamine polymer, wherein said polymer is substantially free of alkylated amine monomers.
Patent TW-546358-B (TW)
Title: Thermosetting powder compositions for the preparation of low-gloss coatings
Inventor: MOENS LUC
IPC: C09D167/00
Filed: 1998-12-16
Granted: 2003-08-11
Abstract: Thermosetting powder coating compositions comprising: (a) an amorphous polyester containing carboxyl groups, rich in isophthalic acid and in neopentylglycol, optionally branched by a polycarboxylic acid or by a polyol containing at least 3 functional groups; (b) a semicrystalline polyester containing carboxyl groups, prepared from one or more saturated aliphatic dicarboxylic acids with a linear chain and from a saturated aliphatic diol with a linear or cyclic chain, optionally branched by a polycarboxylic acid or by a polyol containing at least 3 functional groups, and having a melting point (Tm) of at least 40 DEG C and an acid number of 5 to 50 mg of KOH/g; and (c) a crosslinking agent. These compositions are useful for the preparation of powder paints and varnishes which provide coatings of excellent quality, the gloss of which, measured at an angle of 60 DEG C according to the ASTM D 523 standard, is always less than 50%, that is to say satin or matt coatings.
Patent TW-396634-B (TW)
Title: Method for reducing the manufacturing process steps of the insulated-gate semiconductor devices
Inventor: YU KE-YU
IPC: H01L29/78
Filed: 1999-01-08
Granted: 2000-07-01
Abstract: An device structure includes the following manufacturing process: A substrate with first conductivity forms the first dielectric layer thereon. The second body is then formed on the first dielectric layer. Therefore, the first dielectric layer is formed on the second body as an insulated-gate layer. Subsequently, silicon nitride is formed on the first dielectric layer to replace protective layer. The second dielectric layer is formed on the silicon nitride to produce the first conductive layer on the second dielectric layer. Finally, on the conductive layer, a photo-resistant pattern is produced and parts of the first conductive layer are exposed.
Patent TW-423096-B (TW)
Title: Low-resistance salicide fill for trench capacitors
Inventor: GAMBINO JEFFREY P
IPC: H01L21/8242
Filed: 1999-02-22
Granted: 2001-02-21
Abstract: Trench capacitors are fabricated utilizing a method which results in a refractory metal salicide as a component of the trench electrode in a lower region of the trench. The salicide-containing trench electrode exhibits reduced series resistance compared to conventional trench electrodes of similar dimensions, thereby enabling reduced ground rule memory cell layouts and/or reduced cell access time. The trench capacitors of the invention are especially useful as components of DRAM memory cells.