Patent SG-11201908609V-A (SG)
Title: Making semiconductor devices by stacking strata of micro leds
Inventor: CHONG WING CHEUNG
IPC: H01L33/58
Filed: 2018-03-19
Abstract: 155 B 157 = 142 155G 141 157 144 155R 145 1400 1408 , 140G 149 140G 140R a: 110B . 110G I :::: 110R 110B 110G 140R n 110R (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 27 September 2018 (27.09.2018) omits I 10 o DID HMI O it ADE 011 (10) International Publication Number WO 2018/175338 Al WIPO I PCT (51) International Patent Classification: H01L 33/02 (2010.01) GO9G 3/14 (2006.01) H01L 33/58 (2010.01) G09G 3/22 (2006.01) H01L 33/60 (2010.01) (21) International Application Number: PCT/US2018/023172 (22) International Filing Date: 19 March 2018 (19.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/473,953 20 March 2017 (20.03.2017) US (71) Applicant: HONG KONG BEIDA JADE BIRD DIS- PLAY LIMITED [CN/CN]; Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). (72) Inventors: CHONG, Wing Cheung; Hong Kong Beida Jade Bird Display Limited, Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). ZHANG, Lei; Hong Kong Beida Jade Bird Display Limited, Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). LI, Qiming; Hong Kong Beida Jade Bird Display Limited, Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). CHEN, Jen-Shyan; Hong Kong Beida Jade Bird Display Limited, Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). (74) Agent: FARN, Michael W. et al.; Fenwick & West LLP, Silicon Valley Center, 801 California Street, Mountain View, CA 94041 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, (54) Title: MAKING SEMICONDUCTOR DEVICES BY STACKING STRATA OF MICRO LEDS 165 1-1 00 1-1 00 1-1 O 102 FIG. 1B (57) : A stack of strata containing LEDs is fabricated by repeatedly bonding unpatterned epitaxial structures. Because the epitaxial structures are unpatterned (e.g., not patterned into individual micro LEDs), requirements on alignment are significantly relaxed. One example is an integrated multi-color LED display panel, in which arrays of micro LEDs are integrated with corresponding driver circuitry. Multiple strata of micro LEDs are stacked on top of a base substrate that includes the driver circuitry. In this process, each stratum is fabricated as follows. An unpatterned epitaxial structure is bonded on top of the existing device. The epitaxial structure is then patterned to form micro LEDs. The stratum is filled and planarized to allow the unpatterned epitaxial structure of the next stratum to be bonded. This is repeated to build up the stack of strata. [Continued on next page] WO 2018/175338 Al VIII HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))