Patent SG-11201811465W-A (SG)
Title: Semiconductor package and method of forming the same
Inventor: CHANG KA FAI
IPC: H01L23/31
Filed: 2017-06-08
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property C.--.` Organization 03 111111H11101111111111111111111111111111101101111011111111110111111111111101111 International Bureau (10) International Publication Number (43) International Publication Date .../- WO 2017/222471 Al 28 December 2017 (28.12.2017) WIP0 I PCT (51) International Patent Classification: novis Tower, Singapore 138634 (SG). LIM, Ying Ying; c/o H01L 23/66 (2006.01) HOlL 23/31 (2006.01) Industry Development, Institute of Microelectronics, 2 Fu- H01L 23/52 (2006.01) H05K 1/02 (2006.01) sionopolis Way, #08-02 Innovis Tower, Singapore 138634 H01Q 23/00 (2006.01) (SG). (21) International Application Number: (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; PCT/SG2017/050291 P.O. Box 1088, Rochor Post Office, Rochor Road, Singa- (22) International Filing Date: pore 911833 (SG). 08 June 2017 (08.06.2017) (81) Designated States (unless otherwise indicated, for every (25) Filing Language: English kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, (26) Publication Language: English CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, (30) Priority Data: DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, 10201605211S 24 June 2016 (24.06.2016) SG KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, (71) Applicant: AGENCY FOR SCIENCE, TECHNOLO- MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, GY AND RESEARCH [SG/SG]; 1 Fusionopolis Way, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, #20-10 Connexis North Tower, Singapore 138632 (SG). SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (72) Inventors: CHANG, Ka Fai; c/o Industry Development, — Institute of Microelectronics, 2 Fusionopolis Way, #08-02 (84) Designated States (unless otherwise indicated, for every Innovis Tower, Singapore 138634 (SG). HAN, Yong; c/o kind of regional protection available): ARIPO (BW, GH, = Industry Development, Institute of Microelectronics, 2 Fu- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, = — sionopolis Way, #08-02 Innovis Tower, Singapore 138634 UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, (SG). HO, David Soon Wee; c/o Industry Development, In- TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, _ stitute of Microelectronics, 2 Fusionopolis Way, #08-02 In- EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, = = = _ = (54) Title: SEMICONDUCTOR PACKAGE AND FIG. 1 ,100 i — 1 METHOD OF FORMING THE SAME (57) : Various embodiments may provide a semiconductor package. The semiconductor package may include a semiconductor chip, a first mold compound layer at least partially covering the semiconductor chip, and a redistribution layer over the first mold compound layer, the redistribution layer including one or more = = = 112 Antenna array electrically conductive lines in electrical connection with the semiconductor chip. -1 The semiconductor package may additionally include a second mold compound = = Coupling layer over the redistribution layer, and an antenna array over the second mold compound layer, the antenna array configured to be coupled to the one or more = 110 Second mold electrically conductive lines. = compound layer = = 106 Redistribution layer — One or more electrically conductive lines _ 108 1-1 1-1 Electrical connection IN 7r 104 First mold compound layer ei ei Semiconductor chip 102 N_ IN 0 ei 1 -1 L o [Continued on next page] WO 2017/222471 Al MIDEDIMOM010101110101110010HOHOIDIMMIHIMOVOIS MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))