Patent SG-11201811451X-A (SG)
Title: A method for manufacturing a photovoltaic device
Inventor: HALLAM BRETT JASON
IPC: H01L31/18
Filed: 2017-07-12
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property C.--.` Organization 3 International Bureau (43) International Publication Date .../- 18 January 2018 (18.01.2018) W I PO I MD HIM 01E101011M 3E1 0 0111101101110111101110IMEMO ill OEN (10) International Publication Number WO 2018/009974 Al PCT _ (51) (21) International Application Number: (22) International Filing Date: (25) (26) Publication Language: (30) (71) Applicants: (72) (74) International Patent Classification: HO1L Filing Priority Data: 2016902733 LIMITED Barker (AU). magne, 69002 Lyon (FR). Inventors: Cronulla, New South Wales 2230 (AU). Jason; 2207 F-38300 31/18 (2006.01) H01L 21/30 12 July 2017 (12.07.2017) Language: 12 July 2016 (12.07.2016) NEWSOUTH INNOVATIONS [AU/AU]; Rupert Myers Building, Street UNSW, Sydney, New South APOLLON SOLAR [FR/FR]; WENHAM, Stuart Ross; 36A Washington Street, Bexley, New South Wales (AU). EINHAUS, Roland; 4, me Bourgoin-Jallieu (FR). PCT/AU2017/050719 (2006.01) English English AU PTY Gate 14, Wales 2052 66 Cours Charle- 19 Sturt Road, HALLAM, Brett des Moineaux, Sydney, New (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 2 I (3)) = = Agent: South GRIFFITH HACK; GPO Box 4164, Wales 2001 (AU). — _ = EEE (54) 'Co Title: \ A METHOD FOR MANUFACTURING A PHOTOVOLTAIC DEVICE (57) : The present disclosure provides methodologies for manufac- turing high efficiency silicon photovoltaic devices using hydrogen passiva- tion to improve performance. The processing techniques disclosed use tai- lored thermal processes, sometimes coupled with exposure to radiation to enable the use of cheaper silicon material to manufacture high efficiency photovoltaic devices. , w cc (.9 li = = EEE = = 102 - Providing a substrate comprising doped silicon material with a first polarity _ = = 104 - Forming a reg f silicon material with a second polarity (opposite to the first polarity) into the doped silicon material = = — = 106 - Performing a first hydrogen passivation process at a temperature above 500°C in a manner such that excess minority carriers are generated in the silicon material = _ 11 71' Ir---- C21 C21 0 C:= ,-.... VD 11 0 rl 108 - Forming metallic contacts to extract charge carriers from the silicon material 4 110 A second hydrogen passivation process at a temperature below 500 ° C to generate excess minority carriers in the silicon material C