baber/WOPTO huggingface dataset:
Patent TW-382819-B (TW)
Title: Nanoscale mott-transition molecular field effect transistor
Inventor: ARUNUBA GUPTA
IPC: H01L23/48
Filed: 1998-08-05
Granted: 2000-02-21
Abstract: There is disclosed the use of the Mott transition to effect a metal-insulator transition in the form of a practical three-terminal device with the function of a field effect transistor. The device uses as the conducting channel an array of molecules, in which charge carriers (holes or electrons) are strongly corre-lated. The Mott transition determines metal-insulator switching and has been shown to be controlled by an external gale electrode. Otherwise, the device appears to have electrical characteristics comparable with conventional silicon-based FETs. The 'ON' state has a typical conductance of about 10 e2/h. The device performance, in terms of 'ON' conductance and breakdown voltage of the 'OFF' state, are satisfactory in the circuit context. The device can be built down to smaller dimensions, about one order of magnitude smaller linear dimension, than the conventional FET. The device can be manufactured using self-assembly technology, enabling the key step of rnultilayer structures. Thus, large numbers of transistors per chip can be assembled without the require-ment of an extremely small design rule. This is facilitated by the low voltage and power requirements of the device. Hence the Molt transition field effect transistor (MTFET) is expected offer solutions to the problems arising when existing silicon technology is scaled to extremely high transistor densities.
Patent TW-I233354-B (TW)
Title: Nicotine antagonists for nicotine-responsive neuropsychiatric disorders
Inventor: SANBERG PAUL RONALD
IPC: C07D491/16
Filed: 1998-11-04
Granted: 2005-06-01
Abstract: Nicotine-responsive neuropsychiatric disorders can be treated by administering a nicotine antagonist, particularly mecamylamine. Combination therapy of mecamylamine with a neuroleptic drug also is disclosed. The neuropsychiatric disorders include Tourette's syndrome, schizophrenia, depression, bipolar disorder, tremors, attention deficit hyperactivity disorder, obsessive-compulsive disorder, hemidystonia, rage outbursts and tardive dyskinesia.
Patent TW-468248-B (TW)
Title: Semiconductor device having a ball grid array and a fabrication process thereof
Inventor: FUKASAWA NORIO
IPC: H01L21/02
Filed: 1998-09-14
Granted: 2001-12-11
Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.
Patent TW-396187-B (TW)
Title: Method of hydrogel surface treatment and article formed therefrom
Inventor: BARON RICHARD CARLTON
IPC: G02C7/04
Filed: 1998-09-21
Granted: 2000-07-01
Abstract: A method of modifying the surface characteristic of a polymeric hydrogel, and a polymer article formed therefrom, without causing substantial swelling or distortion or the hydrogel. A preferred method includes photoinitating of the surface of the article with a benzophenone and grafting a macromer having a number-average molecular weight greater than 1000 in the presence of UV irradiation. The preferred article is a siloxane-containing hydrogel, especially a soft contact lens.
Patent TW-414913-B (TW)
Title: The cathode ray tube
Inventor: KIMIYA JUNICHI
IPC: G09G1/04
Filed: 1998-10-09
Granted: 2000-12-11
Abstract: In the electron gun structure of this cathode ray tube, the fifth grid 5 to the eighth grid 8 are used to form the principle electronic lens port. The four-pole lens port is disposed in the interior of the principle electronic lens port. In the fifth grid 5, the baseline voltage Vf1 is overlapped and added with the dynamic voltage Vd1 that is varied with the increased deviation value of the electron beam to form a parabolic shape. In the sixth grid 6, the baseline voltage Vf2 is overlapped and added with the dynamic voltage Vd2 that is varied with the increased deviation value of the electron beam to form the parabolic shape. The voltage Vf2 is added to the seventh grid and the anode voltage Eb is added to the eighth grid.
Patent TW-406523-B (TW)
Title: Inductively-coupled high density plasma producing apparatus and plasma processing equipment provided with the same
Inventor: LIOU KE-CHIANG
IPC: H01J37/32
Filed: 1998-02-11
Granted: 2000-09-21
Abstract: This invention relates to an inductively-coupled high density plasma producing apparatus and a plasma processing equipment having the apparatus. The plasma processing equipment consists of a shape-adjustable coil (antenna), a RF power generator, an impedance matching network, a plasma chamber, a gas supply system, and a vacuum system. The gases for producing plasma are fed into the plasma chamber. The RF power is fed into the coil to produce plasma in the plasma chamber. This invention is characterized by the provision of a shape-adjustable coil, which is used to shape the RF power profile in the plasma chamber such that the plasma density profile (uniformity) can be controlled.
Patent TW-432034-B (TW)
Title: Substituted cyclopropyl phenoxymethyl phenyl carbamates and their use as fungicides
Inventor: ROSS RONALD
IPC: A01N47/24
Filed: 1998-12-10
Granted: 2001-05-01
Abstract: Compounds with fungicidal properties are presented having the formula R(CO)mCR1CR2R3CR4(CO)n-C6H3(X)-OCH2-C6H4-N(ZO)CO2CH3, wherein m and n are 0 or 1; X is hydrogen, halo, (C1-C4) alkyl or alkoxy; Z is (C1-C12) alkyl or haloalkyl; R, R1, R2, R3 and R4 are independently hydrogen, a halogen, lower alkyl, alkenyl, alkynyl, alkoxy, cycloalkyl, aryl, arylcycloalkyl, or heterocyclyl, optionally substituted with one or more halogen atoms.
Patent TW-546121-B (TW)
Title: Method for producing biological pesticide
Inventor: TIAN HUNG-DE
IPC: A01N25/28
Filed: 1998-12-31
Granted: 2003-08-11
Abstract: A method for producing a biological pesticide mainly uses a water soluble polymer as a wall material. A phase coacervation is used to control the pH value of the solution in a water phase in room temperature by adding a metal salt. Alternatively, a cross-linking agent is used to encapsulate a biological pesticide germ and its active matter in order to form a biological pesticide micro-capsule capable of resisting ultraviolet and having a long storage period.
Patent TW-448662-B (TW)
Title: Digital signal processor using a reconfigurable array of macrocells
Inventor: GONION JEFFRY E
IPC: G06F15/80
Filed: 1999-02-06
Granted: 2001-08-01
Abstract: A real time digital systolic processor with a core of reconfigurable interconnected macrocells which can be programmed according to function for processing high bandwidth digital data. Each macrocell contains arithmetic logic units for performing predetermined functions based on format of the input data stream from an outside source or from other macrocells. The interconnects between each macrocell are arranged so that the function of the device is predetermined according to user specific applications.
Patent TW-408354-B (TW)
Title: Structure of field effect transistor and its manufacture method
Inventor: LIAU KUAN-YANG
IPC: H01L21/285
Filed: 1999-03-02
Granted: 2000-10-11
Abstract: A structure of field effect transistor and its manufacture method, which comprises a substrate having a source area and a drain area, gate electrode, gate oxide layer, a first spacer, oxide layer, and a second spacer; wherein the source area and the drain area are located at the bottom of the substrate with some distance, a gate electrode being disposed at the surface of the substrate between the source area and the drain area. Both sides of the gate electrodes are followed by a first spacer, and a gate oxide layer is below the gate electrode and the first spacer. A protective layer is disposed at the external side of the first spacer, and the second spacer is located on the external side of the protective layer.
Patent TW-436335-B (TW)
Title: An effective treatment method for washing the soil contaminated by heavy metals
Inventor: JUNG REN-JIE
IPC: B09C1/02
Filed: 1999-05-04
Granted: 2001-05-28
Abstract: This invention discloses an effective treatment method for washing the soil contaminated by heavy metals. Under the optimum operating conditions, the contaminated soil is leached by mixing with washing solutions which are prepared from phosphoric species and other additives. Experimental results show that the method is very effective for soil decontamination, and the residual concentration of heavy metals in soil can be as low as the environmental background after decontamination. In addition, the washing agents used for the decontamination can be reused with the same decontamination efficiency after electrolytic treatment. The soil after decontamination can be used for agriculture purpose again.
Patent TW-411585-B (TW)
Title: Method of forming CMOS transistors with self-aligned planarization twin-well
Inventor: WU SHIE-LIN
IPC: H01L21/8238
Filed: 1999-05-13
Granted: 2000-11-11
Abstract: The present invention discloses a method for forming CMOS transistors with a self-aligned planarization twin-well. The method comprises sequentially depositing a first pad oxide layer and a silicon nitride layer on the surface of a semiconductor substrate; using a photoresist layer as the mask, implanting high energy phosphorous ions into the semiconductor substrate to define an N-well region; after removing the photoresist layer, using a comprehensive high energy boron ion implantation at a low concentration dosage to form a P-well region besides the N-well region, while implanting the boron ions beneath the N-well region; subsequently removing the silicon nitride layer and the pad oxide layer; performing a high temperature thermal annealing process to form a structure of deep twin-well; forming a plurality of trench isolation regions and defining an active region; implanting high energy low concentration phosphorous ions into the semiconductor substrate to form a penetration isolation layer of the PMOS transistor; comprehensively implanting low energy low concentration BF2 ions to increase the start voltage of the PMOS transistor and the NMOS transistor; and forming a CMOS transistor in the semiconductor substrate in the subsequent process.
Patent TW-432685-B (TW)
Title: Dual crown-shaped rough polysilicon capacitor
Inventor: WU SHIE-LIN
IPC: H01L27/108
Filed: 1999-05-13
Granted: 2001-05-01
Abstract: This invention proposes a kind of dual crown-shaped rough polysilicon capacitor. The structure of capacitor mainly includes a storage electrode, a dielectric layer, and a conduction layer. The storage electrode is located on semiconductor substrate and includes the bottom portion, two vertical extension portions, two horizontal extension portions and two sidewall portions. The bottom portion is used to provide electrical conduction for connecting with the conductor region inside the substrate below. A vertical extension portion individually extends upward from both sides of bottom portion. The horizontal extension portion individually extends outward and horizontally from top ends of two vertical extension portions. Two sidewall portions individually extend upward and vertically from the external ends of two horizontal extension portions. A dielectric layer is located on the storage electrode. A conductor layer is formed on dielectric layer.
Patent TW-416193-B (TW)
Title: An auto-dialing processing method and device of a communication or information device that can automatically output the passing code
Inventor: WU CHUEN-LAN
IPC: H04M1/00
Filed: 1999-05-18
Granted: 2000-12-21
Abstract: An auto-dialing processing method and device of a communication or information device that can automatically output the passing code. It includes the central processing control unit, signal transmitting interface unit, code input unit, access memory, auto-dialing unit, state perceiving unit, and ringing unit. Among them, the above-mentioned central processing control unit generates a proper control orders according to the external activity or signal and internal set commands. Users can ask the central processing control unit to issue a redial or memory dialing order by operating the code input unit, and transmit the dialing number to the electron signal route by way of the signal transmitting interface unit by the auto dialing unit. When the state perceiving unit detects the feedback signal that the other side is connected, the central processing control unit rechecks if the preset number has the extension number or passing code of the other side. If it does, the extension number or passing code is immediately transmitted to the other side via the signal transmitting interface unit, so as to improve the self-processing capability of redial or memory dialing of a communication or information device, and improve the convenience of operation.
Patent TW-442749-B (TW)
Title: Data storage apparatus and access method thereof
Inventor: SAITO KENJI
IPC: H04N5/00
Filed: 1999-05-19
Granted: 2001-06-23
Abstract: A data storage apparatus for storing data to a hard disk or other data recording medium improves data read/write efficiency is provided. The data storage apparatus receives read/write commands over a network from a plurality of terminals connected to the network. The apparatus groups received commands (1a, 4a, 1b, 4b,) according to an area on the data recording medium accessed by each command, stores the received commands to one of predetermined command group areas in a memory according to the group, selects at every predetermined time (T1, T2, ...) one of those command areas and then executes at least one of commands (1a-1c, 4a-4e, 1d-1h, ...) stored in the selected command area.
Patent TW-392105-B (TW)
Title: Stable flow control apparatus
Inventor: JOU MING-DE
IPC: G05D7/00
Filed: 1999-06-11
Granted: 2000-06-01
Abstract: A kind of stable flow control apparatus which is to embed a buffer tank with conventional flow control apparatus to form one molded-piece stable flow control apparatus. The invention employs the principle that the gas is lighter than the liquid so that when the gas enters the buffer tank, it will float on top of the buffer tank and will not flow into the measuring panel pipes with the fluid. The gas floating on top of the buffer tank will be exhausted by timing valve or manual valve to prevent too much gas in the solvent from entering the measuring panel pipes and resulting in abnormal machine shutdown that is caused by the float sensor could not detect the float correctly.
Patent TW-442668-B (TW)
Title: Method of error correction
Inventor: RUPP WOLFGANG
IPC: G02B27/00
Filed: 1999-06-17
Granted: 2001-06-23
Abstract: The invention relates to a method of error correction for a image with non-rotational symmetry used in a component, for example an objective lens mounted with optical elements especially such as lenses, which is characterized in that: a plurality of Peltier devices (6) are separately installed on the circumference of at least one of the optical elements so that it is possible to affect the temperature distribution in the optical elements by using various electrical controls, and to produce heat-conductive connections between the Peltier devices (6) and the optical elements. The invention also relates to an objective with optical elements especially lenses (1) having Peltier devices (6) mounted thereon.
Patent TW-409104-B (TW)
Title: Torque sensor for bicycle and crankshaft assembly for bicycle
Inventor: KISHIMOTO HITOSHI
IPC: B62M9/04
Filed: 1999-08-30
Granted: 2000-10-21
Abstract: The present invention provides a compact-sized torque sensor, which could be assembled easily. Torque sensor for bicycle is a sensor to measure the torque acted on the rotary hanger 2b mounted on the frame 2 of bicycle, while left/right cranks are installed as non-rotary crankshaft, wherein a bearing housing 42 and pressure sensor 45a to 45d are installed. Pressure sensors 45a to 45d are sensors installed between bearing housing 42 and left/right cylindrical components 40, 41 which could install bearing housing on hanger.
Patent TW-436836-B (TW)
Title: Field emission electron source
Inventor: KOMODA TAKUYA
IPC: H01J9/02
Filed: 1999-09-23
Granted: 2001-05-28
Abstract: There is provided a field emission electron source in which electrons can be emitted by electric field without heating using semiconductor material and a method of producing the same. Especially it relates to a field emission electron source which can be applied in planar light source, flat display device, solid state vacuum device, etc. and a method of producing the same. Its purpose is to provide: a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. The solution is: in the field emission electron source, a strong electric field drift part 6, 106 is formed on the n-type silicon substrate 1, 101 on the principal surface thereof and a surface electrode 7, 107 made of a metal film is formed on the strong electric field drift part 6, 106. And the ohmic electrode 2, 102 is formed in the n-type silicon substrate 1, 101. In this field emission electron source 11, 110, when the surface electrode 7, 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 7, 107 which is of a positive polarity with respect to the ohmic electrode 2, 102, electrons injected from the n-type silicon substrate 1, 101 are drifted in the strong electric field drift part 6, 106 and emitted through the surface electrode 7, 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 101, which is an electrically conductive substrate, and a heat dissipation region 162 which is filled in the mesh and has a heat conduction higher than that of the drift region 161.
Patent TW-492138-B (TW)
Title: In situ deposition of a low k dielectric layer, barrier layer etch stop, and anti-reflective coating for damascene application
Inventor: HUANG JUDY
IPC: G02B1/11
Filed: 1999-09-29
Granted: 2002-06-21
Abstract: The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC material for the barrier layers, and etch stops, and ARCs. The dielectric layer can be deposited with different precursors as the SiC material, but preferably with the same or similar precursors as the SiC material. The present invention is particularly useful for ICs using high diffusion copper as a conductive material. The invention may also utilize a plasma containing a reducing agent, such as ammonia, to reduce any oxides that may occur, particularly on metal surfaces such as copper filled features. The invention also provides processing regimes that include using an organosilane as a silicon and carbon source, perhaps independently of any other carbon source or hydrogen source, and preferably in the absence of a substantial amount of oxygen to produce a SiC with a dielectric constant of less than 7.0. This particular SiC material is useful in complex structures, such as a damascene structure and is conducive to in situ deposition, especially when used in multiple capacities for the different layers, such as the barrier layer, the etch stop, and the ARC and can include in situ deposition of the associated dielectric layer(s).
Patent TW-456096-B (TW)
Title: A synchronous flyback converter
Inventor: HEDENSKOG BO
IPC: H02M/
Filed: 1999-10-01
Granted: 2001-09-21
Abstract: In a continuous mode flyback converter having a synchronous switch (Q2) the drive pulse to the switch (Q2) on the secondary side is generated by an inverting buffer circuit being fed from the output voltage terminal. By using such an arrangement several advantages are obtained. Hence, the pulse generating circuit arrangement generates a drive signal to the synchronous switch which is independent of the input voltage and the drive losses can thereby be minimized.
Patent TW-415833-B (TW)
Title: Processes for producing artificial tree and the relative devices
Inventor: HU LI-HUA
IPC: A41G1/00
Filed: 1999-10-30
Granted: 2000-12-21
Abstract: The present invention relates to a process for producing an artificial tree and a device thereof, particularly a process for producing an integral artificial tree and a device thereof. The process comprises: an end stem process, an intermediate stem process and a lower portion stem process. The end stem process comprises installing materials such as iron rods and fine stems into a mold, injection molding the mold, after cooling opening the mold, thereby obtaining a semimanufacture of an injection molded end stem. The intermediate stem process comprises installing the skeleton end of the end stem semimanufacture into a mold, installing fine stems into the mold, injection molding the mold, after cooling and mold opening, obtaining injection semimanufacture molded with an intermediate section stem. The lower portion stem process comprises installing the skeleton end of the intermediate stem semimanufacture into a mold, injection molding the mold, and after cooling and mold-opening, obtaining a complete artificial tree. The mold set of the end stem process and the intermediate section stem process comprises upper and lower molds corresponding to each other. Left/right and up/down side blocks are installed between the upper and the lower molds. The side blocks are installed in the V-shape containing groove on the two sides of the upper and lower mold intermediate stem pattern channel and are separately supported by two springs. The side mold blocks are also installed with a partial pattern channel to installed into a complete stem pattern channel. When the upper and lower molds close down each other, the side mold block presses on the spring and the upper and lower molds keep in a same plane so that the upper and lower molds can smoothly match each other. When opening the mold, the side mold blocks slantly float up by the support of a spring for the convenience of removing the semimanufacture after injection molding. The mold in the lower portion stem process is a common male/female mold set that mates each other up and down. Such that an artificial tree can be molded integrally and have a flexibility, and the artificial tree produced inject form has a mimic effect.
Patent TW-468238-B (TW)
Title: Dielectric layer process for metal sputtering
Inventor: JANG GUO-MING
IPC: H01L21/76
Filed: 2000-03-24
Granted: 2001-12-11
Abstract: This invention provides a dielectric layer for metal sputtering, used in an integrated circuit manufacturing process to stop diffusion of metal atoms. A metal layer is formed by means of sputtering, and the process comprises the steps of: (a) providing a solid substrate; (b) forming a dielectric layer on the substrate by spin coating a dielectric material; (c) baking the dielectric layer to achieve curing requirement; and (d) treating the contact surface of the dielectric layer by using a nitrogen/hydrogen plasma to form a nitride layer which can stop diffusion of metal atoms when the metal layer is formed onto the nitride layer. The inventive dielectric layer process has the effect of stopping diffusion of copper atoms.