baber/WOPTO huggingface dataset:
Patent TW-384306-B (TW)
Title: Cream crystallizer stone floor maintenance composition and method
Inventor: GARDUNO MARLEN TORRESCANO
IPC: C09K13/00
Filed: 1998-02-25
Granted: 2000-03-11
Abstract: This invention provides a composition and method for maintaining the appearance of stone floor surfaces such as marble that avoids the need for use of oxalic acid. This is provided by a stone floor surface crystallizer composition comprising from about 12% to 25% of a silicofluoride crystallizing agent such as magnesium silicofluoride; from about 15% to 25% of at least one fatty acid containing from about 16 to 22 carbon atoms such as stearic acid or mixtures of palmitic, stearic and oleic acids; from about 25% to 45% of at least one particulate abrasive, more preferably, an aluminum oxide abrasive; from about 80% to 140%, based upon the stoichiometric amount of carboxyl groups present in the fatty acid of the composition, of at least one alkaline neutralizing agent for the fatty acid such as a volatile amine such as triethanolamine; from about 0.1% to 2%, of a silicone fluid such as polydimethylsiloxane fluid having a viscosity of from about 100 to 2000 centistokes (0.01 to 0.2 square meters per second) at 20 DEG C; and the balance of the composition comprises water.
Patent TW-360970-B (TW)
Title: Method to fabricate MOSFETS with ESD resistance and self-aligned silicide
Inventor: WU SHYE-LIN
IPC: H01L23/60
Filed: 1998-03-09
Granted: 1999-06-11
Abstract: The invented method comprises: forming an isolation region on a substrate; forming a gate insulation layer and a polysilicon layer; removing a portion of the polysilicon layer to form a gate polysilicon structure; doping a functional element region and an ESD resistance region, thereby forming a first doped region; forming an insulation layer; forming a photoresist layer and defining a resistance pattern; forming a resistance and forming a sidewall structure on the sidewall of the gate polysilicon structure, thereby forming a gate structure; removing the photoresist layer; doping the functional element region and the ESD resistance region, thereby forming a second doped region beneath the region not covered by the gate structure and the resistance in the substrate; performing a first thermal process; and forming a silicide metal layer.
Patent TW-401492-B (TW)
Title: Self-stabilizing, true-tilting pad, apparatus and method for journal bearing
Inventor: MILLER WILLIAM H
IPC: F16C33/10
Filed: 1998-03-13
Granted: 2000-08-11
Abstract: True-tilting pad of journal bearing has face with border region including engagement surface and defining pocket with longitudinal sidebars, bottom, and abrupt step. The pad has leading and trailing portions, with the face extending longitudinally therebetween. The portions can be positioned upstream and downstream, respectively, relative to rotation direction of rotatable shaft having convex surface. The pad is pivotally supported by pivot and can cooperate with one or more other pads and fluid within housing to hydrodynamically and mechanically support the shaft. The pad tilts free of mechanical engagement with other pads. The leading portion can define an entrance to the pocket and the sidebars can converge along the rotation direction. The pocket hydrodynamically increases pressure on the convex surface of the shaft during rotation, and generates pressure effecting on the face counteraction force about the pivot and upstream relative to the rotation direction in order to counteract spragging force. Method of journal bearing relatively dimensions the pocket. First and second true-tilting pads and number of other pads hydrodynamically support the shaft. They decrease one or more axes of elliptical orbit of the shaft and size the axes toward having substantially equal length. Method relatively dimensions and relatively positions the pads. For improved hydrostatic pivot support, the true-tilting pad has conduit from the pocket in fluid communication with feedhole. A number of passageways in fluid communication with the conduit can hydrostatically support one or more of the leading and trailing portions with respect to cam pivots.
Patent TW-360789-B (TW)
Title: Duty cycle control circuit with frequency elimination functions
Inventor: JOU HUANG-CHENG
IPC: G01R29/02
Filed: 1998-03-25
Granted: 1999-06-11
Abstract: The invention discloses a duty cycle control circuit which uses an edge detector on an input stage for performing an edge detection on an input clock signal. The one shot signal from the output of the edge detector is linked to a single steady-state oscillator for triggering a square wave signal having an identical frequency as the input signal. The square wave signal, after being inverted and obtaining the corresponding integration voltage, is fed to one end of a working amplifier as its input. The magnitude of electrical potential between the integration voltage and a reference voltage connected to the other end of the working amplifier is used to let the working amplifier sending out a control voltage which is fed back to the feedback circuit element in the single steady-state oscillator thereby controlling the width of the square wave signal. After the loop has reached its steady state, a preset duty cycle is obtained from the final output signal. Furthermore, a frequency elimination circuit can be added prior to the edge detector thereby obtaining dual functions of obtaining frequency elimination and duty cycle adjustment as the same time.
Patent TW-384452-B (TW)
Title: Image display control apparatus and method
Inventor: KAWAI YOSHIO
IPC: G06T13/40
Filed: 1994-08-23
Granted: 2000-03-11
Abstract: The present invention provides a kind of image display control apparatus and method that can be used to select, display images of creatures corresponding to the different creature evolution processes; particularly, owing to the image display controller, it can increase the realistic feeling as really feeding the creature. To accomplish the aforementioned purpose, and by means of operating necessary equipment, even without having physical fauna and flora, one would enjoy a mean environment and experience real feeling of caring fauna and flora, while nursing education. Having the image display controller features given in Fig. 1~Fig. 12 and as shown in Claim 1 of the patent in application, when at least one datum required for the growth of the preset creature, the input growth factor shall be stored in the memory for growth factors. On one hand, as the growth factor datum stored in this memory for growth factor has reached the preset value and the creature image in display being the final or last growth evolution, replacing the creature image in display, for reading of creature image in the initial stage of growth for the display in the display apparatus. On the other hand, as the growth factor datum stored in this memory for growth factor has reached the preset value and the creature image in display not being the final or last growth evolution, replacing the creature image in display, for reading of creature image in the next stage of growth for the display in the display apparatus.
Patent TW-369767-B (TW)
Title: Driver circuit with pull down NPN transistor
Inventor: NAYEBI MEHRDAD
IPC: H03F1/32
Filed: 1998-05-05
Granted: 1999-09-11
Abstract: A driver circuit with pull down NPN transistor drives an output voltage signal in response to an input voltage signal, without high-speed NPN transistors. A first NPN transistor provides current to the output node when the output node is at a level equal to and less than the level of the input voltage signal less a base-to-emitter junction drop across the first NPN transistor. A second NPN transistor sinks current from the output node when the output node is at a level greater than the level of the input voltage signal less the base-to-emitter junction drop across the first NPN transistor. The second NPN transistor is controlled by a level of a control node. When the level of the output node is greater than the level of the input voltage signal less base-to-emitter junction drop, the first NPN transistor is turned off and the level of the control node is charged up by a current source. When the level of the control node reaches a sufficient level, the second NPN transistor is turned on and the level of the output voltage signal is decreased.
Patent TW-546678-B (TW)
Title: Method for controlling semiconductor fabricating equipments
Inventor: KIM SUNG-GEUN
IPC: H01L21/02
Filed: 1998-07-09
Granted: 2003-08-11
Abstract: A method for controlling a semiconductor fabricating equipment includes the steps of: comparing maintenance data generated from the equipment with reference data predesignated in a host computer; and if the maintenance data are the same as or larger than the reference data, displaying a warning message and stopping the operation of the equipment. Thereby, the method is capable of preventing operational problems due to continuous operations of the equipment without any maintenance. The host computer regularly informs the operator of the point of time to carry out a maintenance for the equipment automatically. Thereby, maintenance can be performed regularly and rapidly. As a result, the equipment can be maintained in the optimum operational state.
Patent TW-443962-B (TW)
Title: Back flow-prevention apparatus
Inventor: HARA HITOSHI
IPC: B29C45/52
Filed: 1998-07-23
Granted: 2001-07-01
Abstract: This invention relates to a backflow prevention apparatus comprising a threaded rod which at least forms the slot of metering part for advancing the resin and a plate like closing member. The closing member is brought into an open status by the resin pressure which is developed behind the closing member in association with metering, to establish communication between the slot and the space ahead of the threaded rod. The closing member is brought into a closed status by the restoring force of elastic material, to shut off communication between the slot and the space ahead of the threaded rod. Upon completion of a metering procedure, the closing member is brought into a closed status by the restoring force of the elastic material to shut off communication between the slot and the space ahead of the threaded rod. Accordingly, sealing can be completed before the start of an injection procedure. Further, since timing for shutting off communication between the slot and the space ahead of the threaded does not vary, not only the amount of resin charged into a mold cavity can be stabilized, but also the variation occurred in injection peak pressure can be suppressed. As a result, molded products can be prevented from suffering burrs, short injection, or alike defects, and weight variation of molded products can be suppressed.
Patent TW-385419-B (TW)
Title: Driving circuit for plasma display panel
Inventor: CHEN CHIOU-LIN
IPC: G09G3/20
Filed: 1998-08-24
Granted: 2000-03-21
Abstract: A driving circuit for plasma display panel comprising the first, second switches connected in series and the third, fourth switches connected which are respectively connected to the positive and negative power source. There are inductors connected to the contact of the first and second switches and the contact of the third and fourth switches. The contact of the third and fourth switches are used for the loading of plasma display panel. When charging the voltage of plasma display panel, the controller firstly conducts the first switch and then after the first predetermined time period disconnects the first switch and conducts the third switch. When discharging the voltage of plasma display panel, the controller firstly conducts the second switch and then after the second predetermined time period disconnects the second switch and conducts the fourth switch. In such kind of driving circuit, the first predetermined time period and the second predetermined time period represent the necessary time for the plasma display panel oscillation to charge or discharge to around the positive and negative power source. The first, second, third and fourth switches are composed of MOSFETs and there are  parasitic diode structures between the drain/source for voltage limitation purpose.
Patent TW-388107-B (TW)
Title: Diffusion barrier Cu metal layer process and diffusion barrier layer thereof
Inventor: LIOU CHUNG-SHI
IPC: H01L21/768
Filed: 1998-09-23
Granted: 2000-04-21
Abstract: A diffusion barrier Cu metal layer process and a diffusion barrier layer thereof, can avoid the negative effect of the diffusion reaction between the Cu metal layer and the conductive layer underneath. The process comprises providing a conductive layer; forming a dielectric layer with a via on the surface thereof; forming a first tantalum layer on the surface of the via; exposing the first tantalum layer in the air and forming a tantalum oxide layer on the surface of the first tantalum layer; forming a second tantalum layer on the surface of the tantalum oxide layer where the tantalum oxide layer is used to reinforce the diffusion barrier power, and the second tantalum layer is used to ensure the adhesion between the copper layer formed subsequently and the conductive layer underneath; and then forming a copper layer on the dielectric layer to fill up the via; and etching back the copper layer with a chemical mechanical polishing method to obtain the desired copper plug.
Patent TW-520457-B (TW)
Title: Display panel and position adjusting method for the display panel
Inventor: NAKAMURA HIROYOSHI
IPC: G02F1/1333
Filed: 1998-09-30
Granted: 2003-02-11
Abstract: A display panel is to be fixed to a light collecting plate having a plurality of lenses and includes a matrix array of pixel electrodes opposed to the lenses of the light collecting plate, a plurality of electrode wiring lines formed along rows and columns of the pixel electrodes, and a driver circuit formed outside a display area corresponding to the matrix array of the pixel electrodes, for driving the pixel electrodes via the electrode wirings. In the display panel, a plurality of alignment marks for positional adjustment method of aligning the focal spots of the lenses with the pixel electrodes are arranged to be opposed to the lenses and separated from the display area by a distance corresponding to an integer number of times of a pitch of the pixel electrodes in at least one of row and column directions of the pixel electrodes.
Patent TW-421830-B (TW)
Title: Process for wet etching of semiconductor wafers
Inventor: SUMNITSCH FRANZ
IPC: H01L21/308
Filed: 1999-02-10
Granted: 2001-02-11
Abstract: For wet etching of semiconductor wafers, especially silicon wafers with a (silicon dioxide) layer with the objects of entirely removing the layer form one side (top) and removing it by undercutting from the opposite side (bottom) simply in an area which extends to the inside from the peripheral edge of the semiconductor wafer, an etching medium is used which contains in addition to the etching agent such as hydrofluoric acid and ammonium fluoride, at least one carboxylic acid. When the process as claimed in the invention is used the undercutting us achieved in a defined area that the edge of the (silicon dioxide) layer remaining on the bottom is smooth and not frayed or jagged as in conventional processes.
Patent TW-440837-B (TW)
Title: Dynamic semiconductor memory device
Inventor: ITOU TAKASHI
IPC: G11C11/408
Filed: 1999-03-05
Granted: 2001-06-16
Abstract: When memory storage capacity is required and power consumption is not so important, a semiconductor memory device is operated in a normal mode. When memory capacity is not so important and power consumption is to be suppressed, two memory cells are used connected in common to one bit line to store one data by rendering two word lines active at the same time. Accordingly, an operation of low power consumption with a longer refresh cycle is allowed. The user can appropriately switch between the two operation modes as necessary for usage.
Patent TW-541205-B (TW)
Title: Improved double metal cyanide catalysts for preparing polyetherpolyols
Inventor: HOFMANN JORG
IPC: C08G65/10
Filed: 1999-03-08
Granted: 2003-07-11
Abstract: The invention relates to new, improved double metal cyanide (DMC) catalysts for preparing polyetherpolyols by polyaddition of alkylene oxides to starter compounds containing active hydrogen atoms, wherein the catalyst contains a double metal cyanide compound, an organic coordination ligand and 5 to 80 wt%, with respect to the amount of catalyst, of an ethylene oxide polyether with a number average molecular weight greater than 500. The new, improved catalysts have a greatly increased reactivity for polyetherpolyol preparation.
Patent TW-410181-B (TW)
Title: Manufacturing method for aluminum rim and apparatus performing the method
Inventor: LAN JIU-KUEN
IPC: B22D17/00
Filed: 1999-03-18
Granted: 2000-11-01
Abstract: The invention relates to a manufacturing method for aluminum rim and apparatus performing the mehtod, in which mold cavity is interlinked with feeding pipe which the other end connects to delivery pipe. The feeding pipe provide a plunger movable therein. The manufacturing method is to deliver the liquefied aluminum through the delivery pipe to the feeding pipe via fast delivery way, and when liquefied aluminum fills the feeding pipe and about 70% of the space in mold cavity, the plunger in the feeding pipe will move and close the material feeding from the delivery pipe. After that, when liquefied aluminum is semi-solidified, plunger will move further and force the aluminum contained in the feeding pipe to fill completely into the mold cavity by a constant pressure. The aluminum rim made by the method of low velocity and high pressure will have finer material structure and better strength, and the product will have better outlook so as to reduce the cost of surface treatment. Thus, this method is valuable to the industry.
Patent TW-407326-B (TW)
Title: Guiding rail mechanism for binding apparatus
Inventor: TORIHATA MINORU
IPC: H01L21/50
Filed: 1999-03-22
Granted: 2000-10-01
Abstract: The object of the present invention is to rapidly change the height of frame guiding rail corresponding to the product to increase the productivity. The solution is to vertically insert the up-and-down moving axis 22 on the guiding rail support 8 in an up-and-down movable and rotatable manner; and, inserting the frame guiding rail 21 at the upper axis portion 22b of the up-and-down moving axis 22 in an up-and-down movable manner; employing the guiding rail depressed spring 26 to force the frame guiding rail 21 downward and pressed on the large diameter portion 22a configured at nearly the center of the up-and-down moving axis 22. The spacer 25 for adjusting the height of guiding rail is formed to be inserted into the large diameter portion 22a from the side direction. The up-and-down moving axis 22 is kept as : when using the up-and-down moving axis depressed spring 27 to force the axis upward and using the large diameter portion 22a to lift the guiding rail 21, it will generate the lifting position as the clearance between the frame guiding rail 21 and guiding rail support 8 for the insertion of spacer 25 for adjusting the guiding rail height; and, at the lifting position, the spacer 25 for adjusting the guiding rail height is inserted and carried on the guiding rail support 8; then, when pushing downward the up-and-down moving axis 22, the large diameter portion 22a will leave the descending position of frame guiding rail 21.
Patent TW-552630-B (TW)
Title: Method of fabricating semiconductor device
Inventor: KAWAHARA KEI
IPC: H01L21/285
Filed: 1999-04-07
Granted: 2003-09-11
Abstract: This invention relates to a method of fabricating a semiconductor device comprising following steps. A silicide film is formed on a p<+>-type region that is to become a source/drain. A silicon oxide film has a contact hole through which the silicide film is exposed. Boron ions are implanted into the p<+>-type region through the contact hole. A Ti film is formed on the silicide film. After the Ti film is formed, the semiconductor substrate into which the ions are implanted is annealed at 780 DEG C to 900 DEG C, to form another p<+>-type region that configures the same source/drain.
Patent TW-414854-B (TW)
Title: Plate-shaped heat pipe and implementation structure thereof
Inventor: SHO HITOSHI
IPC: F28D15/02
Filed: 1999-04-14
Granted: 2000-12-11
Abstract: It is an object of the invention to provide a plate-shaped heat pipe which maintains effective cooling function even when used slantingly in the top heat mode. The means of the invention is to provide a plate-shaped heat pipe comprising: (1) a closed container having opposite main surface portion A and main surface portion B; (2) at least one heat transfer block for transferring the heat, provided in said container to interconnect the inner wall of said main surface portion A and the inner wall of said main surface portion B; (3) a wick positioned on at least part of said heat transfer block in said container; and (4) working fluid enclosed in said container.
Patent TW-414985-B (TW)
Title: Semiconductor device, method of manufacture thereof, circuit board, and electronic device
Inventor: HASHIMOTO NOBUAKI
IPC: H01L23/31
Filed: 1999-06-30
Granted: 2000-12-11
Abstract: A method of manufacturing a semiconductor device comprises a first step of providing a substrate (12) provided with interconnection patterns (10) and covered with a protective layer (50) except those portions to be connected electrically with electrodes (22) of a semiconductor element (20), and providing anisotropic conductive material (16) between the interconnection patterns (10) and the electrodes (22) on the substrate (12), the anisotropic conductive material extending to the protection layer (50) from the area where the semiconductor element (20) is to be mounted; and a second step of connecting between the interconnection patterns (10) and the electrodes (22) electrically by bonding the semiconductor element (20) to the substrate (12) with the anisotropic conductive material (16).
Patent TW-I238821-B (TW)
Title: Process for preparation of 3-isochromanone
Inventor: WHITTON ALAN JOHN
IPC: C07B61/00
Filed: 1999-08-26
Granted: 2005-09-01
Abstract: A process for the preparation of 3-isochromanone which comprises contacting an o-xylene-alpha,alpha'-dihalide with carbon monoxide, in the presence of a catalyst and a hindered amine base in a liquid medium comprising water and a tertiary alcohol.
Patent TW-I247005-B (TW)
Title: Selective oxidation process and composition therefor
Inventor: BARNER HERBERT E
IPC: C07D301/00
Filed: 1999-12-17
Granted: 2006-01-11
Abstract: A process for selectively oxidizing an organic molecule by reacting said organic molecule and oxygen in the presence of a selective oxidation catalyst supported on a mesh-like structure.
Patent TW-429571-B (TW)
Title: Stacked chip package
Inventor: HUANG JR-GUNG
IPC: H01L23/495
Filed: 1999-10-27
Granted: 2001-04-11
Abstract: A stacked chip package comprises a substrate, a chip, a plurality of pins and a molding material. The substrate has a first and a second surfaces and a cavity. A plurality of first contacts are provided on the first surface and around the cavity. a plurality of second contacts are provided on the second surface and around the cavity. The first contacts and the second contacts are electrically connected with each other by the through-holes in the substrate. The chip is disposed in the cavity and its active surface is toward the opening of the cavity. The pins are allocated on the periphery of the cavity and each pin has a first end and a second end. The first end is bent toward the cavity and electrically connected to the solder pads of the active surface of the chip respectively, and the second end respectively has a through-hole aligned with the first contact. The second end is respectively electrically connected with the first contact, and the molding material is filled up the cavity.