Patent SG-11201908884Q-A (SG)
Title: Zincblende structure group iii-nitride
Inventor: WALLIS DAVID JOHN
IPC: H01L21/20
Filed: 2018-03-29
Abstract: 106 104 102 100 Fig. 86 f 00 N 00 O O (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 04 October 2018 (04.10.2018) W I PO I PCT 011101 V III o Ho mil mil VIII VIII no VII IE (10) International Publication Number WO 2018/178315 Al (51) International Patent Classification: H01L 21/20 (2006.01) (21) International Application Number: PCT/EP2018/058250 (22) International Filing Date: 29 March 2018 (29.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: PCT/EP2017/057764 31 March 2017 (31.03.2017) EP (71) Applicants: CAMBRIDGE ENTERPRISE LIMITED [GB/GB]; The Old Schools, Trinity Lane, Cambridge Cam- bridgeshire CB2 1TN (GB). ANVIL SEMICONDUC- TORS LIMITED [GB/GB]; Windmill Industrial Estate, Birmingham Road, Allesley, Coventry Warwickshire CV5 9QE (GB). (72) Inventors: WALLIS, David John; Department of Materi- als Science and, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge Cambridgeshire CB3 OFS (GB). FRENTRUP, Martin; Department of Mate- rials Science and, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge Cambridgeshire CB3 OFS (GB). KAPPERS, Menno Johannes; Depart- ment of Materials Science and, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge Cam- bridgeshire CB3 OFS (GB). SAHONTA, Suman-Lata; De- partment of Materials Science and, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge Cam- bridgeshire CB3 OFS (GB). (74) Agent: NAYLOR, Matthew et al.; Mewburn Ellis LLP, City Tower, 40 Basinghall Street, London Greater London EC2V 5DE (GB). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, (54) Title: ZINCBLENDE STRUCTURE GROUP III-NITRIDE (57) : A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C-SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000 °C, to a thickness of at least 0.5µm. There is also disclosed a corresponding semiconductor structure comprising a zincblende structure group III-nitride layer which, when characterized by XRD, shows that the substantial majority, or all, of the layer is formed of zincblende structure group III-nitride in preference to wurtzite structure group III-nitride. [Continued on next page] WO 2018/178315 Al MIDEDIMOMMIDIREI0130101EIMMOMMUOIMIE DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))