Patent SG-11201908990S-A (SG)
Title: Advanced optical sensor, system, and methodologies for etch processing monitoring
Inventor: TUITJE HOLGER
IPC: H01L21/3065
Filed: 2018-03-13
Abstract: 118 116 102 Light source 108 Shutter 128 Illumination system 104 Collection sys em 106 124 Controller Spectrometers 120 126 N co 00 O C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 04 October 2018 (04.10.2018) W I PO I PCT omit °nolo 01E1°111E11o° Imo ow (10) International Publication Number WO 2018/182967 Al (51) International Patent Classification: H01L 21/67 (2006.01) HOlL 21/66 (2006.01) H01L 21/3065 (2006.01) (21) International Application Number: PCT/US2018/022209 (22) International Filing Date: 13 March 2018 (13.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/472,494 29 March 2017 (29.03.2017) US (71) Applicant: TOKYO ELECTRON LIMITED [JP/JP]; Akasaka Biz Tower, 3-1, Akasaka 5-chome, Minato-ku, Tokyo 107-6325 (JP). (72) Inventors; and (71) Applicants (for US only): TUITJE, Holger [DE/US]; 4970 Seneca Park Loop, Fremont, CA 94538 (US). TIAN, Xinkang [US/US]; 43788 Paso Neuz CMC, Fremont, CA 94539 (US). MENG, Ching-ling [US/US]; 982 Cascade Dr., Sunnyvale, CA 94087 (US). VUONG, Vi [US/US]; 33534 Trinculo Ln., Fremont, CA 94555 (US). JIN, Wen [CN/US]; 215 Quinaut Way, Fremont, CA 94539 (US). YAN, Zheng [US/US]; 1879 Norton Sound Common, San Jose, CA 95131 (US). MIHAYLOV, Mihail [US/US]; 5238 Macaw Court, San Jose, CA 95123 (US). (74) Agent: GARLEPP, Edwin, D. et al.; Oblon, McClelland, Maier & Neustadt, L.L.P., 1940 Duke Street, Alexandria, VA 22314 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (54) Title: ADVANCED OPTICAL SENSOR, SYSTEM, AND METHODOLOGIES FOR ETCH PROCESSING MONITORING 100 FIG. 1 (57) : An apparatus, system, and method for in-situ etching monitoring in a plasma processing chamber. The apparatus includes a continuous wave broadband light source; an illumination system configured to illuminate an area on a substrate with an incident light beam having a fixed polarization direction, the incident light beam from the broadband light source being modulated by a shutter; a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector; and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property value from the processed light, and control an etch process based on the determined property value. [Continued on next page] WO 2018/182967 Al OIII SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))