baber/WOPTO huggingface dataset:
Patent TW-348066-B (TW)
Title: Filter cartridge, filter assembly comprising the same and recycling method therefor
Inventor: LINDBERG PAUL CHARLES
IPC: B01D27/04
Filed: 1996-11-27
Granted: 1998-12-21
Abstract: A filter cartridge adaptable to receive a filter element under pressure to form a seal between the cartridge and the element, the cartridge being hollow and having a side wall with a hardness sufficient for multiple use which involves repetitively inserting the filter element and withdrawing the filter element from the cartridge; the cartridge carrying the filter element with a filter, the cartridge comprising: an opening end forming an inlet of a filter element, a side wall and a second end corresponding to the opening end of the cartridge; at least one filter element in the cartridge which is arranged around the center tube and defines a channel where the filtrate flows out and is disposed into: the to-be-filtered feedstock entering the inlet through the filter element(s), and the filtered feedstock or filtrate flowing through a transversal passage and entering a discharge passage surrounded by the center tube; the filter element(s) surrounding the center tube so that the center tube and the side wall of the cartridge tightly contact with each other; the feedstock essentially axially flowing through the filtration media and entering a transversal passage; and in which the filter medium or media comprise a non-biodegradable material.
Patent TW-379144-B (TW)
Title: Method of manufacturing water purification filter
Inventor: LI RU-LIN
IPC: B01D39/06
Filed: 1996-12-27
Granted: 2000-01-11
Abstract: Method of making water purification filter, having a sieving screen of proper number of mesh for screening raw material, comprised of Maifenshih, activated carbon or activated coal, then rinsing the raw material with clean water, for removal of pollutants from the raw material, followed by dehydration by drying at the high temperature of 60 DEG C~100 DEG C and, adding the raw materials or at least a single raw material to an adhesive for mixture into mashed state of at 80 DEG C~120 DEG C and then sending the mashed raw material to the forming machine for condensation by heating to soft solid at 100 DEG C ~160 DEG C for plastification and eventually forming the soft solid in a specific form by means of water cooling. With the aforementioned manufacture method and as allowed by the mold design, a wide variety of filters may be made and due to the characteristics of condensation of said filter, the water purification process comprising impurities filtering, deodoring, decoloring, activating may be conducted, thus reducing the dimension of the water purifier and making it useful in all places.
Patent TW-348153-B (TW)
Title: Water activated carton sealer
Inventor: CHIOU CHERN DUANN-MEY
IPC: B65B7/00
Filed: 1997-01-06
Granted: 1998-12-21
Abstract: A water activated carton sealer which combines a machine, an elevator, a tape machine, and press wheel; in which when a carton goes into the machine, it will touch a push wheel which is on the top of the tape machine; then, it starts to glue from the top of the tape, and by advanced carton makes the push wheel continue its progress; besides, a switch and a flange separate, a cylinder touches the switch again and makes the cylinder stop; at the same time, a spring draws back the push wheel and press wheel and finishes its movement.
Patent TW-327250-B (TW)
Title: Wafer dicing/bonding sheet and process for producing semiconductor device
Inventor: UMEBARA NORIHITO
IPC: H01L21/70
Filed: 1997-01-21
Granted: 1998-02-21
Abstract: A wafer dicing/bonding sheet comprising: an expansion process sheet which comprises a soft film and a pressure sensitive adhesive layer formed on the soft film, and a polyimide bonding sheet which comprises a processing film for polyimide type resin, and a polyimide adhesive layer formed on the processing film.
Patent TW-425438-B (TW)
Title: A method for the heat treatment of ZnSe crystal
Inventor: HIROTA RYU
IPC: C30B33/02
Filed: 1997-07-03
Granted: 2001-03-11
Abstract: An object of the present invention is to provide a method for the heat treatment of ZnSe crystal whereby the crystal can be prevented from deterioration of crystallinity and caused to have low resistivity without occurrence of precipitates in the crystal. The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200 DEG C/min.
Patent TW-538048-B (TW)
Title: A soluble derivative of a soluble polypeptide and its use
Inventor: SMITH RICHARD ANTHONY GODWIN
IPC: A61K47/48
Filed: 1997-07-18
Granted: 2003-06-21
Abstract: Soluble derivatives of soluble polypeptides incorporating membrane binding elements, their use in therapy and methods and intermediates including peptide membrane binding elements.
Patent TW-400591-B (TW)
Title: An automated stacking and soldering apparatus for three dimensional stack package devices and manufacturing method thereof
Inventor: KIM JAE-JUNE
IPC: H01L25/18
Filed: 1997-07-31
Granted: 2000-08-01
Abstract: An automated apparatus for three dimensional stack package devices comprises a package loader for loading a plurality of upper individual packages to be stacked; a package loader/unloader for loading a plurality of lower individual package to be stacked and for unloading a plurality of three dimensional stack package being stacked and soldered; an indexing system for receiving the upper and lower individual packages and for transporting the stacked upper and lower packages, the indexing system comprising an indexing plate rotating at a constant revolution speed and a plurality of guide fingers each fixed to the indexing plate and having mounting grooves in which the individual packages are mounted; an applying unit for applying a solder flux or a solder paste to metal leads of the upper individual packages to which a solder alloy of 85% tin and 15% lead has been plated during an outer lead plating process; a first transfer tool for transferring the lower individual packages loaded by the package loader/unloader to the indexing system; a second transfer tool for transferring the upper individual packages loaded by the package loader to the applying unit and then to the indexing system; a heating unit for heating the stacked upper and lower packages transported by the indexing system, so that metal leads of the upper and lower packages are solder jointed. The indexing system may further comprises a loading shuttle arm for placing and stacking the upper individual packages onto the lower individual packages mounted in the mounting grooves of the guide fingers and an unloading shuttle arm for removing the stacked and solder packages from the mounting grooves.
Patent TW-362260-B (TW)
Title: Method of automatic alignment titanium silicide with peripherals by two-stage side wall processing and automatic alignment between array and contact
Inventor: YAN LI-WEI
IPC: H01L21/768
Filed: 1997-08-05
Granted: 1999-06-21
Abstract: A kind of method by employing two-stage side wall processing for automatic alignment titanium silicide with peripherals and automatic alignment between array and contact which is to cover an adjusting layer on the gates of array to adjust the h/s ratio of array. There forms a thin protection side wall on the array and peripherals to protect the damage from removing the side wall. By the h/s ratio of array is larger than that of peripherals, there forms the growing titanium silicide shielding to be filled on the side wall layer and to cover the shape of peripherals. During the titanium silicide process, the method can effectively form the automatic aligned titanium silicide with peripherals and the automatic aligned array with the contact.
Patent TW-338723-B (TW)
Title: A pulse-type beauty appliance using plane electrode
Inventor: ISAWA YOSHIHIRO
IPC: A61N1/18
Filed: 1997-11-10
Granted: 1998-08-21
Abstract: A pulse-type beauty applicator with soft and wide contact area formed by the primary electrodes constituted of plane conductors and a number of sub electrodes which together with the primary electrodes form the plurality of electrode pairs for programmed conduction contact in the human body, and the electrodes through the switch circuits in the same number as that of the sub electrodes are connected to the output of the pulse generator respectively, and the switching movements through the switch c circuits divides the pulses of the generator by time while feeding to the pairs of the electrodes in sequence.
Patent TW-356606-B (TW)
Title: Inductor for semiconductor device and method of making the same
Inventor: RI TAI-FOKU
IPC: H01L29/00
Filed: 1997-11-19
Granted: 1999-04-21
Abstract: A kind of semiconductor device containing inductor, comprising: an insulator layer formed on a semiconductor substrate; a semi-circular columnar groove formed inside the insulator layer; and having formation of underlying conductive lines between the insulator layer and the groove, and thin-spring-shape inductor of upper conductive lines connected with the said underlying conductive lines.
Patent TW-417180-B (TW)
Title: Metnod of forming transistor component with ITLDD structure
Inventor: WU SHIE-LIN
IPC: H01L21/28
Filed: 1998-02-06
Granted: 2001-01-01
Abstract: A method of forming ultra short channel component with ITLDD structure. First, a silicon layer (14) is formed on the semiconductor substrate (10), and a dielectric layer (16) is formed on the silicon layer. Then, a sacrificed section is formed on the dielectric layer to define a gate section. A part of the sacrificed section is oxidized to form an oxide layer on the top end and side wall of the sacrificed section, and at least part of the sacrificed section is not oxidized. The oxide layer is taken as a mask to remove the dielectric layer and part of silicon layer, so as to form a step shape on the silicon layer. After the oxide layer is removed, the non-oxidized area within the sacrificed section and the dielectric layer are used as a mark to remove silicon layer, and then an inverse-T shape structure is formed within the silicon layer. Finally, through the inverse-T shape structure, ions are implanted into the substrate therefore to form an inverse-T shape gate light doped drain (ITLDD) structure.
Patent TW-444017-B (TW)
Title: Process for preparation of 4H-4-oxo-quinolizine-3-carboxylic acid derivatives
Inventor: WANG WEI-BO
IPC: C07D455/02
Filed: 1998-02-16
Granted: 2001-07-01
Abstract: A process for the preparation of a compound having the formula, wherein R1, R2, R3, R4, and R5 are defined, from an enamine by chain expansion and ring closure followed by additional derivatization, treatment with a 3-alkoxyl-acryloyl compound, another ring closure, and converting a hydroxyl group to a leaving group.
Patent TW-409366-B (TW)
Title: Ferroelectric memory cell and method of making the same
Inventor: HSU SHENG-TENG
IPC: H01L21/822
Filed: 1998-03-06
Granted: 2000-10-21
Abstract: A method of forming a semi-conductor structure forming, on a prepared substrate, a ferroelecuic memory (FEM) gate unit. A gate junction region is formed between the source junction region and the drain junction region for the FEM gate unit on a FEM gate unit device area, which FEM gate unit includes a lower metal layer, a ferroelectric (FE) layer, and an upper metal layer, and which is formed on a conductive channel precursor. The structure of the semiconductor includes a substrate, which may be either bulk silicon or SOI-type silicon, conductive channels of first and second type formed above the substrate, an FEM gate unit formed above a channel region, wherein the FEM gate unit includes a lower metal layer, an FE layer, and an upper metal layer, and wherein a conductive channel of a second type is formed under the FEM gate unit.
Patent TW-427956-B (TW)
Title: 4-alkyl semicarbazides as oxygen scavengers
Inventor: BAILEY BRUCE R
IPC: C23F11/14
Filed: 1998-04-16
Granted: 2001-04-01
Abstract: A method for removing dissolved oxygen from alkaline water containing dissolved oxygen at a temperature greater than 250 DEG F which comprises the step of: adding to said alkaline water containing dissolved oxygen an effective oxygen-scavenging amount of a water-soluble semicarbazide of the formula, wherein R1, and R2 are selected from the group consisting of C1-C10 alkyl, cycloalkyl, aryl, cycloalkyloxy and alkyloxy groups. Preferred materials are 4-phenyl semicarbazide, 4-isopropyl semicarbazide, 4,4-diethyl semicarbazide and carbazoyl morpholine. Below 400 DEG F, a catalyst is also required.
Patent TW-524741-B (TW)
Title: Biaxially oriented laminate film of wholly aromatic polyamide and magnetic recording media
Inventor: IIDA MAKOTO
IPC: B32B27/34
Filed: 1998-05-19
Granted: 2003-03-21
Abstract: A biaxially oriented laminate film comprising a wholly aromatic polyamide layer A and a wholly aromatic polyamide layer B containing an inert fine particles and laminated on one surface of the wholly aromatic polyamide layer A. The surface not in contact with the wholly aromatic polyamide layer B of the wholly aromatic polyamide layer A has projections having an average height of 2 to 85 nm and an average width of 20 to 500 μm at a density of 4 to 2,500/mm<SP>2</SP> and the surface, not in contact with the wholly aromatic polyamide layer A, of the wholly aromatic polyamide layer B is rougher than the surface, not in contact with the wholly aromatic polyamide layer B, of the wholly aromatic polyamide layer A.
Patent TW-384391-B (TW)
Title: Thermal pulsed micro flow sensor
Inventor: FU JIAN-JUNG
IPC: G01F1/68
Filed: 1998-05-25
Granted: 2000-03-11
Abstract: The present invention discloses a kind of thermal pulsed micro flow sensor, comprising a flow channel used for test fluid pass through; a heater, located upstream of the flow channel and heating the fluid passing through the channel; and at least three thermal sensors located downstream from the heater in the flow channel, used for sensing thermal pulses carried by the fluid flowing the thermal sensors. The distance relations among at least three heat sensors are the distance L1 between the first thermal sensor (S0) at the relatively most upstream of flow channel and the third thermal sensor (S10) at the most downstream is: dF=(A*L13)*{1/T1}-1/(T1+dT)}; wherein dF is the resolution required by the system in units of micro seconds; A is the cross-sectional area of the flow channel; T1 can be expressed as T1= (A*L1)/F1, wherein F1 is the maximum flow rate allowed in the testing parameter in units of sccm; and dT is thermal pulse signal distortion resolution in units of micro seconds; and the distance L2 between the first thermal sensor (S0) at the relatively most upstream of flow channel and the second thermal sensor (Sz) at the relatively next downstreamd is dF=(A*L2)*{1/T2}-1/(T2+dT)}, wherein, dF, A, dT have the same definition above, T2 is expressed by T2=(A*L2)/F2, wherein F2={(A*L1)/R}+<alpha>1; R is the response time required by the flow meter, <alpha> is a predetermined adjustment value to overlap the sensing ranges of S1 and S2. The present invention also discloses a flow rate measurement method using said thermal pulsed flow meter.
Patent TW-516953-B (TW)
Title: Artificial teeth
Inventor: KOSUGE NOBUHIRO
IPC: A61C13/10
Filed: 1998-06-09
Granted: 2003-01-11
Abstract: The present invention relates to a pair of artificial teeth 1, 2 (upper and lower) worn by a person whose upper and lower dentitions are completely missing, and comprises a pair of dental plates 3, 4 mounted on the upper and lower jaws respectively, and a plurality of artificial teeth 5, 6 affixed on each of the dental plates 3, 4. The dips of the artificial teeth 5 affixed on the upper dental plate 3 are so arranged that they are on the same level, while those of the artificial teeth 6 affixed on the lower dental plate 4 are also on the same level. The artificial teeth 5, 6 are arranged to locate on the same circumference as viewed from the level.
Patent TW-371806-B (TW)
Title: A dual-frequency rectangular microstrip antenna with a pair of properly-bent narrow slots
Inventor: WONG KIN-LU
IPC: H01Q5/00
Filed: 1998-07-15
Granted: 1999-10-11
Abstract: By embedding a pair of properly-bent narrow slots close to the nonradiating edges of a rectangular microstrip patch, a novel single-feed dual frequency operation of microstrip antenna is obtained. And good impedance matching of these two operating frequencies, both having same polarization planes and broadside radiation patterns, can be obtained by using a single probe feed. The novel configuration of the proposed microstrip antenna can have a lower frequency ratio than that of conventional design by varying its bent angle of bent slots. Also, the two operating frequencies have very similar radiation characteristics. In summary, the proposed design is especially more suitable for dual frequency application where lower frequency ratio is required and I of great value in industrial application, satisfying the requirement of invention patent.
Patent TW-391007-B (TW)
Title: Memory testing device
Inventor: JOU SHAU-YU
IPC: G11C29/00
Filed: 1998-09-22
Granted: 2000-05-21
Abstract: The invention provides a memory testing device applicable to test memory devices or embedded memory blocks to reduce the test time by simplifying part of the output as confirmation data. The memory testing device includes a memory block, a processing device and a mode selection device, wherein data is read out from the memory block. A processing device is provided to process the output data for generating a confirmation data that has a bit number less than that of the output data. The mode selection device is provided to select a testing mode for the processing device. The testing mode includes at least a fully high voltage level mode, a fully low voltage level mode, a data comparing mode and a timing output mode.
Patent TW-400618-B (TW)
Title: The forming method of self-align contact
Inventor: JANG DAU-SHENG
IPC: H01L21/768
Filed: 1999-01-08
Granted: 2000-08-01
Abstract: A forming method of self-align contact. This invention is formed by Reverse SAC Etch Process. This invention is that after forming the insulative side wall spacer, it forms the electrically conductive layer. Which is being the built-in lining connecting layer. Then, to perform a reverse SAC Etch Process, which patterns the contact via. Besides, it forms an inter-layer dielectric (ILD) on the unetched. It electrically and conductively contacts to avoid the short that caused by contacting betweens the device and the active pattern electrically conductive layer. This invention could overcome the above technical problems.
Patent TW-461880-B (TW)
Title: New naphthyl- and anilide-substituted sulphonamides
Inventor: BENDER WOLFGANG
IPC: C07C311/44
Filed: 1999-01-22
Granted: 2001-11-01
Abstract: The present invention relates to new naphthyl- and anilide-substituted sulphonamides of the general formula (I), in which the substituents A, D, E, G, R1, R2, R3, R4 and X have the meanings indicated, and to processes for their preparation and their use as antiviral agents, in particular against cytomegaloviruses. Sulphonamides of the general formula (I), in which R1 and R2 are identical or different and represent hydrogen, or straight-chain or branched alkyl or acyl each having up to 4 carbon atoms, A, D, E and G are hydrogen, R3 represents straight-chain or branched alkyl having up to 6 carbon atoms, which may be substituted with one substituent selected from hydroxyl, cyano, halogen, azido, carboxyl or phenyl, or R3 represents C3-C7 cycloalkyl, or phenyl substituted with halogen, or R3 represents radical of the formula -L-O-CO-Q, in which L represents a straight-chain or branched alkanediyl group having up to 6 carbon atoms, Q represents alkyl having up to 6 carbon atoms, or represents a radical of the formula, in which a denotes the number 1or 2, R5 denotes hydrogen, R6 denotes hydrogen or denotes straight-chain or branched alkyl having up to 6 carbon atoms, where the alkyl is optionally substituted by imidazolyl, R7 and R8 are identical or different and denote hydrogen, tert-butyloxycarbonyl or benzyloxycarbonyl, R4 denotes hydrogen or a radical of the formula, in which R5', R6', R7' and R8' have the meaning of R5, R6, R7 and R8 indicated above and are identical to or different from this, X has the meaning of R4 indicated above and can be identical to or different from this meaning, and their stereoisomeric mixtures and salts, with the exception of N-[4-[[[5-(dimethylamino)-1-naphthalenyl]sulphonyl]-amino]phenyl]acetamide.
Patent TW-448083-B (TW)
Title: Method for making composite material gears and product therefrom
Inventor: CHANG RANG-RONG
IPC: B23F17/00
Filed: 1999-03-05
Granted: 2001-08-01
Abstract: Disclosed are the manufacturing method and product of composite material gears that are mechanical parts for general purpose use, especially the forming of gears using a composite material composed of long and short fibers. On one hand, the composite material with the characteristics of low weight, high strength and flexibility is used to replace the metallic material used in traditional gear design in order to satisfy the design requirements of weight reduction while maintaining strength. On the other hand, under the design requirements for strength, the general problems of lack of wear resistance and transmission capability for non-metallic materials are solved effectively.
Patent TW-581743-B (TW)
Title: Method and apparatus for electrocoagulation of liquids
Inventor: POWELL SCOTT WADE
IPC: B01J/
Filed: 1999-03-15
Granted: 2004-04-01
Abstract: An electrocoagulation treatment device includes a plurality of spaced reaction plates disposed within a reaction chamber. A voltage is applied to selected reaction plates to create an electrical field within the electrocoagulation chamber. The plates are arranged vertically with respect to the chamber which induces a vertical flow of liquid through a device. Gases formed in the electrocoagulation process are allowed to rise to the top of the liquid line and can be vented to the atmosphere. The solids which precipitate out of the liquid stream are carried by the liquid stream to secondary separation. Any remaining solids can be removed as sludge through a drain in the bottom of the device. A foam cover is provided to isolate the electrical connections of the plates from moisture. The top cover is provided to isolate the chamber for safety purposes. The device may be manufactured as a large industrial unit, a portable unit or a unit adapted for use within the home. The device may be operated in a pressure controlled environment, thus eliminating the need for a pump when the liquid steam is already pressurized. The voltage and amperage of the electrical field within the reaction chamber may be adjusted as necessary by placing selected reaction plates in electrical contact with the voltage source. The incoming line voltage itself may be kept at a constant which eliminates the need for a separate transformer. The reaction plates are easily removed from the reaction chamber and may be replaced individually or as a set.
Patent TW-558832-B (TW)
Title: Improved fabrication process for buried type flash memory
Inventor: HUANG JIN-YI
IPC: H01L27/115
Filed: 1999-04-15
Granted: 2003-10-21
Abstract: A fabrication process of buried type flash memory is provided, in which a tunneling oxide layer and a first polysilicon layer are formed before the trench formation. Therefore, there is no polishing difficulty problem in the subsequent polishing process due to uneven height of the memory array and the peripheral device. Moreover, because the tunneling oxide layer is formed before the formation of the trench, the oxide loss in the shallow trench can also be reduced.