baber/WOPTO huggingface dataset:
Patent TW-319853-B (TW)
Title: A method and apparatus for executing commands in a graphics controller chip
Inventor: KARL SCOTT MILLS
IPC: G06F13/14
Filed: 1997-03-12
Granted: 1997-11-11
Abstract: A graphics controller circuit for minimizing an amount of data received from a host: The graphics controller circuit includes a register file with a plurality of registers. The graphics controller accepts commands addressed to virtual registers, and generates plurality of instructions including an instruction to access one of the registers in the register file. By using such a virtual register number in a command and generating several instructions in response thereto, the graphics controller circuit of the present invention minimizes the amount of data host sends over the system bus.
Patent TW-376609-B (TW)
Title: Communication system with at least one slave station and a master station as well as a master station for said communication system
Inventor: SOTEK KAREL
IPC: G06F12/06
Filed: 1997-04-08
Granted: 1999-12-11
Abstract: The operation of any desired number of initially unidentified slave stations S is possible. Identification with subsequent address assignment is carried out by means of the master station M, in that all the slave stations simultaneously output bit by bit, via open-drain output circuits OC, individual identification codes ID which are stored in them. Communications system which has at least one slave station (S) and one master station (M) to control it, with the following features: stored in each slave station (S) is an identification code (ID) which has bits, each of which has one of two logic states (0, 1), the first output circuits (OC) are connected on the output side to a line (C; C/D), the identification codes (ID) can be applied simultaneously bit by bit to the first output circuits (OC), if bits of the first logic state (0) are present simultaneously at all the output circuits (OC), the line (C; C/D) assumes a first potential (VCC), if, on the other hand, a bit of the second logic state (1) is present at one of the first output circuits (OC), the line (C; C/D) assumes a second potential (earth), each slave station (S) has a monitoring means (U) for monitoring if the read-out bit of its identification code (ID) has the second logic state (1) in the event that the line (C; C/D) assumes the second potential (earth), and for deactivating the slave station (S) if this is not the case.
Patent TW-419465-B (TW)
Title: Novel carboxylic acid derivatives, their preparation and use as endothelin antagonists
Inventor: AMBERG WILHELM
IPC: C07D215/22
Filed: 1997-04-11
Granted: 2001-01-21
Abstract: Carboxylic acid derivative of the formula I, where the radicals have the meanings stated in the description, and the preparation of these compounds and their use as drugs are described.
Patent TW-375757-B (TW)
Title: Cathode structure of electron gun for cathode ray tube
Inventor: KIM CHANG-SEOB
IPC: H01J3/02
Filed: 1997-07-08
Granted: 1999-12-01
Abstract: A cathode structure of an electron gun for a cathode ray tube comprises a substrate; cathode electrode layers formed on the substrate spaced apart from each other at predetermined intervals; a plurality of metal tips for emitting electrons formed on the top of the cathode electrode layer and the substrate layer to isolate the metal tip from each other; a first gate electrode layer formed on the top of the insulating layer where the metal tips are formed and having gates through which the metal tips are exposed; and a second gate electrode layer formed on the upper surface of the insulating layer, extending laterally from the first gate electrode layer, and divided into several parts by a gap therebetween.
Patent TW-377478-B (TW)
Title: Method of tape auto bonding of ball grid array package chips
Inventor: TSAI WEI-JEN
IPC: H01L21/56
Filed: 1997-08-14
Granted: 1999-12-21
Abstract: This method pertains to a method of tape auto bonding of ball grid array package chips. Due to the expensive cost of base material for improved TAB-BGA packaging and inaccurate positioning by implantation of solder balls, it is difficult to reduce the size of solder joint. Furthermore, this kind of circuit packaging must go through wire bonding process, making the packaged volume even larger. The process under this invention includes: (1) using polyimide material for the substrate, with one side coupled with copper plate, which is etched to form contact holes; (2) electroplating its surface with copper/tin, and electrolyzing the holes to form protuberances for solder joints; (3) etching away the surface coating of copper, and removing tin layer; (4) drilling holes with laser; and (5) covering up sputtering mask. A miniaturized solder joint is thus formed externally for chip coupling, requiring only a single solder joint. It can therefore reduce the size of chip packaging.
Patent TW-444046-B (TW)
Title: Thermoplastic resin composition and its processing method
Inventor: CHEN WEI
IPC: C08L75/04
Filed: 1997-08-27
Granted: 2001-07-01
Abstract: A composition is described herein to improve the hydrophobicity of a thermoplastic resin wherein said composition is at least 0.3 parts by weight of a thermoplastic silicone blend having: (A) an organosilicone resin of the empirical formula (R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d, wherein a and d are positive numerical values and b and c are zero or positive numerical values with the provisos that a+b+c+d=1, 0 ≤ (b+c) ≤ 0.2 and the ratio of a:(b+c+d) is between 0.3 and 1.0; and R is a monovalent radical independently selected from the group consisting of hydrogen atom or hydroxyl, alkyl, alkenyl, alkoxy, oximo, aryl, epoxide, carboxyl, ether, polyether, amide and alkyl amino radicals, which R groups may be the same or different, with the proviso that at least sixty mole percent of said R radicals are methyl; and (B) a linear silicone fluid having the empirical formula (R'3SiO1/2)x(R'2SiO2/2)y(R'SiO3/2)z, wherein x and y are positive numerical values and z is 0 or a positive numerical value with the provisos that x+y+z=1, y/(x+y+z) ≥ 0.8; and R' is a monovalent radical independently selected from hydroxyl or alkyl radicals, which R' groups may be the same or different, with the proviso that at least sixty mole percent of said R' radicals are methyl; said organosilicone resin (A) and said linear silicone fluid (B) being present in relative amounts such that said blends have a dynamic shear modulus (G*), measured at a frequency of 10 radians/sec, of at least 5 x 10<SP>7</SP> dyne/cm<SP>2</SP> at temperatures less than a predetermined maximum storage temperature.
Patent TW-349176-B (TW)
Title: Optical system with grating element and image-grabbing device using the optical system
Inventor: BOKU KAZUTAKE
IPC: G02B9/00
Filed: 1997-09-11
Granted: 1999-01-01
Abstract: An optical system with a grating element, which comprises: a lens the incident face of which being a concave face and having a positive refractive power; and a grating element face formed on at least one face of the lens and having a positive refractive power.
Patent TW-405259-B (TW)
Title: Manufacture method of the charge storage structure
Inventor: CHEN HUNG-NAN
IPC: H01L27/108
Filed: 1997-11-08
Granted: 2000-09-11
Abstract: The manufacture method of the charge storage structure in accordance with the invention comprises the steps of: when sequentially depositing the first polysilicon layer and the second polysilicon layer of the bottom electrode, using the native oxide naturally produced on the space of the deposition of the first and the second polysilicon layer as the etch stopper of the recessed slot formed on the second polysilicon layer; controlling the etch depth of the recessed slot to increase the degree of uniformity and quality of the subsequent step coverage thin film deposition; and forming the recessed slot and the hemispherical grained polysilicon (HSG-Si) so as to provide larger surface area of the bottom electrode and increase the capacitor value of the charge storage structure.
Patent TW-365650-B (TW)
Title: Ultraviolet radiation index device
Inventor: CHEN YAN-RU
IPC: G01J1/48
Filed: 1997-12-18
Granted: 1999-08-01
Abstract: This invention deals with the combination of dyestuff that changes color when meeting ultraviolet ray and the ultraviolet ray absorbent in different ratios for use in one or more declaring areas and under radiation of different ultraviolet rays, to show different colors, plus the ultraviolet index on its side, for immediate reading of the ultraviolet radiation.
Patent TW-354363-B (TW)
Title: Method of an apparatus for treating process gases in a circulating fluidized bed
Inventor: MULLER PATRICK
IPC: F23C10/20
Filed: 1997-12-26
Granted: 1999-03-11
Abstract: Process gases, in particular process waste gases from refuse incineration, are introduced into a circulating fluidized bed from below via a venturi-nozzle-like inlet and form a core stream (K), auxiliary-gas flows (H) are injected in an annular marginal zone (6) concentrically to the core stream (K) into the circulating fluidized bed, the fluidized-bed solid particles sinking to the bottom in marginal regions of the fluidized bed are thereby delivered into the core stream (K).
Patent TW-415905-B (TW)
Title: Closure device
Inventor: KHWA PENG TEOK
IPC: B65D43/20
Filed: 1998-02-04
Granted: 2000-12-21
Abstract: A closure device for a case of an antimagnetic material comprising a box part (1) and a sliding lid (5) requires neither in the lid nor in the box part break-throughs and offers high security against unauthorized opening of the case when at least one permanent magnetic locking pin (4a, 4b) is arranged slidable in the box part (1) at right angles to the plane of the lid (5), and is loaded in the direction of the lid (e.g. by means of a spring) so that the locking pin clasps behind a locking shoulder (6a, 6b; 66) configured on the inner side of the lid when closed. For opening the lid (5) an unlocking plate (7) may then be used comprising at the corresponding location a permanent magnet (8a, 8b) which is magnetized opposite the direction of magnetization of the locking pin (4a, 4b).
Patent TW-455978-B (TW)
Title: Method for testing wafers
Inventor: JENG JAU-CHIN
IPC: G01R31/28
Filed: 1998-02-16
Granted: 2001-09-21
Abstract: The present invention relates to a kind of method for testing wafers. At first, a wafer is provided, on which plural bumps are formed. Then, a TAB (tape-automated-bonding) tape having plural pads is designed such that each pad individually has a corresponding circuit and an external contact to make the bump electrically connect with the pad. Additionally, a voltage and a current are inputted to the TAB tape in order to perform a test. Therefore, the present invention can conduct a global test for the whole wafer before performing a packaging process so as to test and check out the bad chips in advance. Furthermore, through the use of a TAB tape, the internal circuit can be designed as a multi-layer mode such that it is able to overcome the problem of complicated circuit required when performing a test onto the whole wafer.
Patent TW-496727-B (TW)
Title: Cycloalkylalkanecarboxamides and their preparation and use
Inventor: WETTERICH FRANK
IPC: C07C233/13
Filed: 1998-06-15
Granted: 2002-08-01
Abstract: The present invention relates to novel cycloalkylalkanecarboxamides of the formula I, where the substituents have the following meanings: A is C3-C6-cycloalkyl; R1 is C1-C6-alkyl or C2-C6-alkenyl; R2, R3 and R4 are hydrogen or, independently of this meaning, have one of the meanings of the radical R1; n is 0 or 1; Y is cyano or halogen; W is phenyl, naphtyl or heteroaryl.
Patent TW-456037-B (TW)
Title: Semiconductor device and method for its fabrication
Inventor: OASHI TOSHIYUKI
IPC: H01L21/8242
Filed: 1998-03-25
Granted: 2001-09-21
Abstract: This invention provides a method to prevent over-etching of the semiconductor substrate in forming the contact hole so that the contact does not penetrate into a semiconductor substrate. The solution is: lower wiring lines of a semiconductor memory are covered with a silicon nitride film, and a SiO2 interlayer insulating film is formed over the silicon nitride film. When forming a contact hole, an opening is formed first in the silicon oxide interlayer insulating film by anisotropic etching, and then the silicon nitride is removed by isotropic etching from the opening. Residues of oxide film, if any, are removed by anisotropic etching to complete a contact hole reaching the semiconductor substrate.
Patent TW-432305-B (TW)
Title: Electronic commerce transaction system
Inventor: TAKAHASHI NAOKI
IPC: G06Q20/00
Filed: 1998-03-27
Granted: 2001-05-01
Abstract: A center site is provided in network to conduct commerce transaction through center station. Center site stores the open transaction information taken from the member site in connection with network. Each site is provided with open transaction information database available to the public and certified database keeping contract contents based on the transactions among sites. Center site receives transaction request of the counterpart site in accordance with the transaction information available to the public to inform the corresponding information source site. Furthermore, in response to the resulting transaction between the information source site and transaction counterpart site, the achieved contract content with respect to transaction result shall employ certification procedure to store in the certified database.
Patent TW-425717-B (TW)
Title: Solid state image sensing apparatus, camera using the apparatus, and method for driving the apparatus
Inventor: TANAKA AKIHISA
IPC: H04N5/335
Filed: 1998-04-23
Granted: 2001-03-11
Abstract: A solid state image sensing apparatus comprising: a solid state image sensing device operated selectively either in an all-pixel read-out mode in which signal charges of all pixels represented by the devices are read therefrom individually at the same time, or in a thinned read-out mode in which the signal charges are read only from part of vertical pixel columns formed by the devices; and a frequency varying unit for varying a driving frequency of the solid state image sensing device depending on the operating mode in effect. When used illustratively in a camera, the inventive apparatus reduces power dissipation without affecting the number of pictures output per unit time.
Patent TW-403829-B (TW)
Title: High temperature high pressure air-to-air heat exchangers and assemblies useful therein
Inventor: ROBERT G GRAHAM
IPC: F28F9/02
Filed: 1998-05-20
Granted: 2000-09-01
Abstract: What is disclosed herein is high pressure, high temperature, heat exchanger segments, combinations of such segments to form novel high pressure, high temperature, heat exchangers, novel pan assemblies for use in such heat exchangers, and systems and industrial processes utilizing such heat exchangers.
Patent TW-463407-B (TW)
Title: Hydrogen storage alloy
Inventor: GAYDOS MARK
IPC: H01M4/38
Filed: 1998-05-29
Granted: 2001-11-11
Abstract: A hydrogen storage alloy of the AB5-type, where the A component includes La and/or Nd and at least 0.4 mole % Pr, as well as batteries including the alloy, are disclosed.
Patent TW-451131-B (TW)
Title: Processor local bus posted DMA flyby burst transfers
Inventor: WILKERSON DENNIS CHARLES
IPC: G06F13/28
Filed: 1998-06-08
Granted: 2001-08-21
Abstract: A method and implementing system are provided which includes a DMA controller coupled to a slave bus controller through a processor local bus. The slave bus controller is also coupled to a memory unit. The memory unit is connected directly to a peripheral device. The DMA controller is arranged to receive a data transfer request from the peripheral unit and initiate a transfer cycle with the slave bus controller. The slave bus controller is selectively operable to assert a transfer signal to the memory unit which enables data movement directly between memory and the peripheral device in accordance with the request from the peripheral device. Upon completion of the address transfer and prior to the completion of the data transfer, the slave bus controller generates a transfer complete signal back to the peripheral device. This technique allows for a DMA FlyBy transfer to be overlapped with a subsequent processor local bus transfer.
Patent TW-426884-B (TW)
Title: Method for photolithography of semiconductor
Inventor: PENG NIAN-TZU
IPC: H01L21/027
Filed: 1998-08-12
Granted: 2001-03-21
Abstract: A method for the photolithography of a semiconductor can avoid the photoresist image defect in the photolithography imaging. The method comprises coating a photoresist layer on a substrate; adding a low dosage of exposure prior to developing to generate a minute amount of acid groups in order to increase the hydrophilia on the surface of the photoresist; and performing a selective exposure. In the subsequent developing step, the ability of the whole area of the photoresist layer being covered is improved when a basic solution contacts the substrate, thereby improving the defect of the photolithography pattern caused by a poorer hydrophilia existed before and increasing the yield.
Patent TW-388125-B (TW)
Title: Method for fabricating dynamic random access memory (DRAM) cells with minimum active cell areas
Inventor: CHEN LI-YE
IPC: H01L27/108
Filed: 1998-08-19
Granted: 2000-04-21
Abstract: A method for making DRAM cells with minimum active device areas (cell areas) using novel sidewall-spacer bit lines is achieved. A trench is etched in an insulating layer aligned over the device areas and orthogonal to the gate electrodes, and extending over the first and second source/drain areas. A conducting layer is deposited and etched back to form sidewall-spacer bit lines. A planar second insulating layer is formed in which bit line contact openings are etched between the sidewall-spacer bit lines to the first source/drain areas. The contact openings are filled with a third conducting layer to form the bit line contacts. A third insulating layer is deposited and capacitor node contact openings are etched between the sidewall-spacer bit lines and to the second source/drain areas. An insulating layer is deposited and etched back to insulate the sidewall-spacer bit lines in the node contact openings, and a fourth conducting layer is deposited and etched back to form the node contacts. By this self-aligned method, the minimum unit cell area (device area) can be reduced to about 6F2, where F is the minimum feature size for the current technology. Any one of the current stacked capacitor structures, such as crown, fin-shaped, and the like, can now be built on the node contacts to provide memory cells with increased packing density.
Patent TW-365544-B (TW)
Title: Children's toy for drawing color pictures
Inventor: YAMAZAKI YOSHIRO
IPC: A63H33/00
Filed: 1998-09-11
Granted: 1999-08-01
Abstract: This invention is a kind of toy for drawing color pictures that can be an ideal sensible educational tool for children. This toy comprises two boards with many cells in between these two boards, of which most of the component cells are divided up into desirable even number of regions, each one painted in a uni-color using magnetic granules and dispersive media, and dispersive fluid for painting the background portion and sealing adjacent regions to display different colors. Contacting the base plate of one side that comprises all different regions with a magnetic pen attracts magnetic granules from different regions with different colors, each region represented by a single color, thus showing a colorful stroke in the contact path.
Patent TW-434567-B (TW)
Title: Design of non-volatile static random access memory
Inventor: OUYANG WEI-SHIAN
IPC: G11C7/00
Filed: 1998-09-15
Granted: 2001-05-16
Abstract: A kind of method and apparatus are provided in order to generate non-volatile static random access memory (SRAM). This non-volatile SRAM Cell is formed by two back-to-back, alternately coupled CMOS inverters. Each CMOS inverter has one PMOS and one NMOS having outputs Q and Q~, respectively. Because SRAM itself has a completely symmetrical structure and positive feedback characteristic, therefore, we can make two NMOSs, which are originally completely symmetrical, change to have different threshold voltages through hot electron effects. If two NMOSs in SRAM Cell have different threshold voltages, due to positive feedback effect, output of SRAM Cell can be made toward a determined direction and random situation will not be generated when SRAM Cell conducts so as to make SRAM Cell have non-volatile function. The following conditions must be fulfilled for generating hot electron. (1) NMOS must be in the saturation state, that means VDS≥VGS-Vthn, in which VDS is voltage from drain to source; VGS is voltage from gate to source; Vthn is threshold voltage of NMOS. (2) VDS must be large enough and is about 7V in general. The operating manner of non-volatile SRAM Cell is shown in the follow. (1) General write-in action is performed on SRAM Cell so as to make SRAM Cell have the determined state, that means Q/Q~ is high low value or low high value. (2) A negative voltage pulse, for example -3V, is added individually to the source electrodes of two NMOSs in SRAM Cell such that one of the NMOSs will change threshold voltage due to the saturation state it is in and the hot electron effects. Threshold voltage of the other NMOS will not be changed so as to make two NMOSs, which are originally completely symmetrical, in SRAM Cell change to have different threshold voltages, that means Vthn1≠Vthn2. Therefore, SRAM Cell is made to have non-volatile function. The so-called non-volatile SRAM is due to the fact that data stored in SRAM Cell will not disappear when machine is turned off such that the originally stored data will be generated again when machine is turned on again after power source is turned off.
Patent TW-429413-B (TW)
Title: Projection exposure device, projection exposure method, optical cleaning method, and the method of fabricating semiconductor device
Inventor: OGATA TARO
IPC: G03F7/20
Filed: 1998-10-14
Granted: 2001-04-11
Abstract: A photosensitive wafer is exposed to light of a target illuminance regardless of the variation of time-varying transmittance of an optical system, and the exposure process is proceeded as follows. There are 20,000 pulses idly shot before starting exposure of a first wafer (25). When the first and 20,000th laser pulses produce oscillations, the transmittances of the optical system are calculated at the two moments by acquiring the output signals from an integrator sensor (10) and an illuminance sensor (28), and then a predictive line of time-varying transmittance is calculated from the two transmittances. When the exposure is started, the transmittance of the optical system is calculated at the elapsed time of exposure from the predictive line of time-varying transmittance, and the intensity of exposing light is controlled. Therefore, the illuminance on the wafer can be adjusted depending on the actual variation of the transmittance. Also, the accumulated quantity of exposing light incident to the wafer (25) is regulated to ensure a target exposure dose of the wafer (25), so that the accumulated quantity of exposing light incident to the wafer can reach a target value regardless of the variation in the transmittance of an illumination optical system or a projection optical system during exposure.