baber/WOPTO huggingface dataset:
Patent JP-H04100214-A (JP)
Title: Normal-pressure film forming device
Inventor: FUJITA HIROSHI
IPC: H01L21/205
Filed: 1990-08-20
Abstract: PURPOSE:To measure the thickness of a film formed on a semiconductor wafer on-line by measuring the quantity of fine particles on the wafer by detecting scattered light and controlling the thickness of the film being formed on the basis of measurements. CONSTITUTION:When the thickness of a film to be formed on a semiconductor wafer 3 is set in a CPU 25, the apertures of the first and second flow rate controlling sections 8 and 9 are set in accordance with the set value and the flow rates of the first and second reactive gases supplied to a cover 4 are controlled. The first and second gases are made to flow out toward the wafer 3 from nozzles through a path in the cover 4. The first and second gases are mixed with each other on the wafer 3 and produce fine particles. The fine particles form the film on the surface of the wafer 3 which is placed on a susceptor 2 and heated to a certain temperature. Therefore, when the cover 4 is moved on a base 1 from one end to the other end, the film can be formed on all wafers 3 placed on the susceptor 2.
Patent JP-2001040790-A (JP)
Title: Termite-proof structure of building underfloor
Inventor: ARAGAKI MORINOBU
IPC: A01M1/24
Filed: 1999-07-30
Abstract: PROBLEM TO BE SOLVED: To provide a termite-proof structure of a building underfloor preventing the entry of termites into the underfloor and facilitating maintenance. SOLUTION: A termite proofing agent bucket 7 with a termite proofing agent 8 filled in a long cylinder body opened or openable at the upper part, is fixedly embedded in an earthen floor slab 3 formed of reinforced concrete, vertically piercing the earthen floor slab 3, and a piping 4 used to supply- discharge water, to convey gas and other fluids or to guide a cable 5 for electric wiring is connected to the termite proofing agent bucket 7 and extended to both upper and lower sides of the earthen floor slab 3. The termite proofing agent bucket 7 is provided with an openable cover 71 so as to be able to replenish the termite proofing agent 8.
Patent JP-H0958524-A (JP)
Title: Rear end reinforcing structure of tunnel part
Inventor: TANUMA KINICHI
IPC: B62D25/20
Filed: 1995-08-25
Abstract: PROBLEM TO BE SOLVED: To provide a rear end reinforcing structure of a tunnel part by which the vicinity of the rear end of the tunnel part can be effectively reinforced by a cross member. SOLUTION: A cross-sectional almost hat-shaped cross member 16 is joined to a rear surface of a seat back panel 15, and a first cross-sectional surface H1 running in the car width direction is formed, and a lower edge part 18 of the cross member 16 is partially extendedly formed in a tunnel part 13, and a front end flange 19a and a side end flange 19b of an extending part 19 are respectively joined to an upper surface part 13a and a side surface part 13b of the tunnel part 13, and a second cross-sectional surface H2 containing both corner parts K of the rear end 14 is formed.
Patent JP-H0959760-A (JP)
Title: Production of carbon thin film
Inventor: IMAMURA HIDEKI
IPC: C30B29/04
Filed: 1995-08-25
Abstract: PROBLEM TO BE SOLVED: To obtain a DLC thin film having high hardness at a high rate at the time of forming a carbon thin film on a substrate by sputtering by using a target prepared by mixing graphite and diamond and producing plasma with high-frequency discharge. SOLUTION: A substrate 2 is supported by a water-cooled holder 3 in a gas chamber 1 and grounded through a variable resistor. A target 4 is opposed to the substrate 2, supported by a water-cooled RF electrode and connected to an RF power source 6 through a matching circuit 5, and the RF electrode is surrounded with a grounded shield 8. A mixture of graphite and diamond is used for the target 4, the chamber 1 is evacuated, and gaseous Ar is introduced to a specified pressure. A high-frequency wave is impressed from the power source 6 to produce plasma, and the target 4 is sputtered. An appropriate DLC thin film is formed on the substrate 2 in this way at a high rate.
Patent JP-H04101370-A (JP)
Title: Terminal board for wiring
Inventor: KAGAWA SHINICHI
IPC: H01R9/22
Filed: 1990-08-17
Abstract: PURPOSE:To secure an insulation distance between wiring terminals with a minimum wall-thickness of a partition rib by providing the partition rib in an approximate cross shape which divides a wiring face and a protrusion on the face end of the rib, and forming a pin part which protrudes from the wiring face in a corner for wiring. CONSTITUTION:A wiring face 12 on the surface of a terminal board 11 made of heat-resisting insulating material whose surface is formed in an approximate quadrangle shape is divided into approximately equal four parts by a partition rib 13 in an approximate cross shape which is formed integratedly with the wiring face 12. A terminal metal fitting 14 which passes through and are embedded in each division of the wiring face 12, and a wiring terminal 15 is inserted and fixed, then electrical connection is performed on each. In addition, a protrusion 17 which is formed on the edge part of the partition rib 13 and orthogonal to the rib 13 and protrudes from the wall-thickness of the rib 13, and a pin part 18 which is formed in a corner part of the wiring face 12 which protrudes in the same direction as the partition rib 13 are provided integratedly. Thus, compaction is achieved and an insulating distance is secured so that wiring can be done at all times from two directions.
Patent JP-H0384211-A (JP)
Title: Hinge mechanism
Inventor: HIRONO TETSUO
IPC: F16C11/10
Filed: 1989-08-24
Abstract: PURPOSE:To reduce the number of parts and make the mechanism compact by forming a hinge mechanism of a rotary arm provided with a protruding part and a slotted hole fitted with play at an axis provided at the plate erected face part, and a plate provided with a recessed apt for regulating the action of the rotary arm by its engagement with the protruding part of the rotary arm and the guide part of the protruding part. CONSTITUTION:A rotary arm 3 is rotated around an axis 2, and with this rotation, a protruding part 10 is rotatably moved along the side face 1a of a plate 1 and a guide part 11 so as to prevent the dislocation of the rotary arm 3 during its rotation. When the protruding part 10 is moved into a recessed part 12, the rotary arm 3 is moved downward by the length of a slotted hole 3a by the gravity action, and the protruding part 10 falls into the recessed part 12, thereby stopping the rotating action of the rotary arm 3. As the protruding part 10 provided at the rotary arm 3 thus falls into the recessed part 12 cut at the upper part of the plate 1 to lock the rotary arm 3, the number of parts is reduced as well as a hinge mechanism can be made compact.
Patent JP-S59110987-A (JP)
Inventor: ONIKI KAZUO
IPC: F16L1/00
Filed: 1982-12-14
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H1167772-A (JP)
Title: Leveling method for protruding electrode of semiconductor element
Inventor: AZUMA KAZUJI
IPC: H01L21/321
Filed: 1997-08-13
Abstract: PROBLEM TO BE SOLVED: To make leveling height of protruding electrodes uniform with high precision by reducing the variance in leveling height of the protruding electrodes of a semiconductor element, when the height of a plurality of protruding electrodes formed on the semiconductor element is made uniform by sandwiching the semiconductor element between two plates and adding a load. SOLUTION: When the height of a plurality of protruding electrodes 1 formed on a semiconductor element 2 is made uniform by sandwiching a semiconductor element 2 between two plates 3 and 4 and adding a load, a material 5 that distorts elastically is inserted inbetween a surface 2a of the semiconductor element 2, on which the protruding electrode 1 is not formed and a leveling plate (on the lower side) 4, and under this condition, the tip of the protruding electrode 1 is squashed by adding the load, so that the height of the plurality of protruding electrodes 1 is leveled uniformly.
Patent JP-S6280277-A (JP)
Title: Thin amorphous alloy strip having superior constant magnetic permeability
Inventor: MORITO NOBUYUKI
IPC: C22C45/02
Filed: 1985-10-02
Abstract: PURPOSE:To improve the constant permeability of a thin amorphous alloy strip in a wide range by forming a prescribed insulating film on the surface of the strip having a positive magnetostriction constant so that compressive force is applied in the longitudinal direction of the strip. CONSTITUTION:The titled thin amorphous alloy strip is obtd. by forming an insulating film for applying compressive force on the surface of a thin amorphous alloy strip having a positive magnetostriction constant. The insulating film has 1-5mum thickness and is formed by coating the surface of the strip with an aqueous soln. of lithium silicate having 3-4 molar ratio of SiO2/Li2O, baking the soln. and carrying out heat treatment at 250 deg.C - the crystallization temp.
Patent JP-S6375824-A (JP)
Title: Communication system based on gaze recognition
Inventor: KOBAYASHI TOMOO
IPC: G06F3/0346
Filed: 1986-09-18
Abstract: PURPOSE:To accurately transmit information by determining points to be gazed or display marks for various information such as words and instructions displayed on a display board and allowing an observer to transmit his will. CONSTITUTION:A communication system based on gaze recognition where a person suffering from a degenerative disease or the like transmits his will consists of a display board 1, a video part 2, an operating circuit 3, an output device 4, etc. When he selects characters or the like indicating, for example, headache from information entered on the display board 1 and turns his eyes toward them, light is projected to his eyeballs 5 from a light projector 6 and their images are formed on the image plate of the video part 2 because his eyeballs 5 are moved in accordance with the position of selected characters or the like. Thus, coordinate positions in transverse and longitudinal directions are obtained by the operating circuit 3 to transmit information, which the observer selects, to the external in accordance with the position of information on the display board.
Patent JP-H04103764-A (JP)
Title: Formation of thin film
Inventor: SANO KENICHI
IPC: C23C14/54
Filed: 1990-08-21
Abstract: PURPOSE:To form a thin film excellent in film quality and having clean surface by removing a surface segregation layer in the proper intermediate stage of film formation and performing film formation at a temp. not higher than a specific critical segregation temp. at the time of exerting film formation accompanied by surface segregation CONSTITUTION:In a film forming method accompanied by surface segregation, the above surface segregation layer is removed in the intermediate state of film formation where the ratio of the coating of a substrate with film reaches one and does not reach the desired film thickness yet. Further, the whole process of film formation is performed at a temp. not higher than the critical segregation temp. defined by the following equation: TSC=Q/{R.ln(D0/(lambda.r))}. In the above equation, TSC is critical segregation temp.(K, absolute temp.), Q is the activation energy (J/mol) of the diffusion of segregation matter in the film, D0 is the frequency term (m<2>/s) of the above, R is the constant (J/mol/K) of gas, (lambda) is film thickness (m), and (r) is average film forming velocity (m/s). The above surface segregation layer removal is done by means of sputtering, etching, etc. By this method, the thin film excellent in film quality and having clean surface can be obtained without causing introduction of surface defects and increases in impurity concentration in the film and surface roughness.
Patent JP-S6278914-A (JP)
Title: Gate circuit
Inventor: TAWARA AKINORI
IPC: H03K17/60
Filed: 1985-10-02
Abstract: PURPOSE:To output a next signal without any influence of a reflected wave by providing a circuit element which is connected between the 1st TR and the 2nd TR of a phase splitting circuit so that when the 1st TR operates into a specific state, the 2nd TR operates into the opposite state from the 1st TR. CONSTITUTION:When an input signal S1 is at L, a TR 21 is off and TRs 31 and 61 are on. Currents I1 and I2, therefore, flow as shown in a figure. In this case, when a reflected wave Sr with a negative level is impressed to an output terminal I3, a current I3 flows to an output terminal V0 through the base and emitter of the TR 61. When the input signal S1 goes up to a high level, the TR 21 turns on to flow a current I1 through the TR 21 and also flow a current I3 through a diode 71, a nose N4, and the base and collector of a TR 61, so the current I1 shown by the solid line in the figure is ceased and the TR 31 turns off. An off-buffer circuit operates according to said variation to flow a discharging current to the TR 61. the output terminal V0, therefore, varies from the negative level to the high level and an output signal S0 corresponding to the input signal S1 is outputted.
Patent JP-H04344609-A (JP)
Title: Lens barrel for automatic focusing camera
Inventor: EGUCHI HARUKI
IPC: G02B7/09
Filed: 1991-05-21
Abstract: PURPOSE:To obtain the handleable lens barrel which enables switching between MF and AF on a lens side and is so constituted that a focus ring which enables manual operation in the MF does not rotate in the AF. CONSTITUTION:This lens barrel is provided with the focus ring 15 which moves a focus lens L1 in the direction of the optical axis as it rotates, an AF-MF switching ring 31 which can manually be moved straight between the AF position and MF position in the optical-axis direction and rotated, a clutch pin 47 which is supported in a radial hole formed in the AF-MF switching ring 31 so that the pin is moved forth and back to and away from the outer periphery of the focus ring 15 and energized and moved toward the focus ring, the small-diameter part 44 of the focus ring 15 which is not in contact with or contacts the clutch pin 47 in a low-friction state when the AF-MF switching ring 31 is at the AF position, the large-diameter part 46 which contacts the clutch pin 47 with strong force when the switching ring 31 is at the MF position to rotate the AF-MF switching ring 31 integrally with the focus ring 15, and a clutch mechanism 43 which couples the focus ring 15 with a motor-driven AF mechanism or disconnects them according to whether the AF-MF switching ring 31 is at the AF position or MF position.
Patent JP-S6460325-A (JP)
Title: Fat and oil composition
Inventor: SUGIHARA HIROSHI
IPC: A23D9/00
Filed: 1987-08-31
Abstract: PURPOSE:To obtain a fat and oil composition suitable as a kneading fat and oil for cookies, biscuits, chocolates, etc., without causing whitening phenomena in using by addition to baked confectioneries, etc., or during preservation after baking, by blending hardened fish oil with a specific vegetable fat and oil. CONSTITUTION:The aimed fat and oil composition, obtained by blending (A) >=20% hardened fish oil hydrogenated so as to provide preferably 30-45 deg.C melting point with (B) >=20% vegetable fat and oil having >=50% solid fat index (SFI) value at 20 deg.C and >=30% SFI value at 30 deg.C, such as rapeseed oil or coconut oil, and, as desired, a liquid oil, and having the following SFI values, 30-55% at 20 deg.C, 10-30% at 30 deg.C and <=5% at 40 deg.C.
Patent JP-S6375208-A (JP)
Title: Loading of sand bag
Inventor: WAKAMATSU SEIJI
IPC: E02B3/04
Filed: 1986-09-18
Abstract: PURPOSE:To obtain a three-dimensional sand bag which can withstand the force of flowing water by a method in which adjoining sand bags each formed by packing a high-water absorptive resin into water-permeable cloth bag are fixedly stacked up by means of fixers. CONSTITUTION:Holes 4 are formed in the corners of the surface of a sand bag 2 stacked up on the ground's surface 1, and a hole 6 is also formed in almost the center of the surface of the sand bag 2. The sand bag 2 is formed by packing a high-water absorptive resin into a water-permeable rectangular prism cloth bag. Steel pins 8 are thrust through the holes 4 of the corners of the bag 2 and their tip are driven into the ground's surface to fix the adjacent sand bag 2. Since the sand bags 2 are stacked up on the ground's surface when the high-water absorptive resin is dried, the labor and time to be required for the construction can thus be greatly reduced.
Patent JP-H1064255-A (JP)
Title: Method for writing data to single transistor type ferro-dielectric memory
Inventor: ISHIHARA HIROSHI
IPC: H01L21/8247
Filed: 1996-08-20
Abstract: PROBLEM TO BE SOLVED: To control interruption between cells, and obtain property of high integration density, and low power consumption by giving the potential V to a selected word line, V/3 to the other word lines, 0 to a selected silicone stripe and 2V/3 to the other lines, and generating V potential to only the selected cells. SOLUTION: In a dielectric memory structure, a plurality of single crystal semiconductor thin films 2 are formed on an insulated substrate 1 and a ferro- dielectric thin film 3 and a stripped conductive electrode 4 are deposited thereon. In the case of the writing operation to this memory, V is applied to the selected word line 4 and V/3 to the non-selected word line 4. Moreover, potential 0 is given to the selected silicon stripe 2, while 2V/3 to the non-selected silicon stripe 2. As a result, the potential V is generated only on the gate insulating film of the selected cell, and ±V/3 is generated to all the other portion. Thereby, the partial polarization-control becomes possible. Thereby, inter-cell interference during the write operation can be controlled to realize non-volatile characteristic, high integration density and low power consumption characteristic.
Patent JP-S6490897-A (JP)
Title: Device and method of installing engine assembly to aircraft
Inventor: CHIYAARUZU SHII KUROUSEN
IPC: B64D27/20
Filed: 1988-08-30
Abstract: PURPOSE: To enhance the vibration absorbing property by constituting a strut for supporting an engine assembly on both sides of an aircraft fuselage of a plurality of transversely extending spars and beams parallel to the vertical axis, and supporting the forward spar by a beam through a vibration isolating arm. CONSTITUTION: In an aircraft 20 having an engine assembly 26 arranged on both sides of a rear fuselage 22 through a strut 32, the strut 32 is formed of a forward spar 40, a central spar 60 and a backward spar 62 which are extended outward from the structural-frame of the fuselage 22. The inner end of each spar 40, 60, 62 is fixed to a rib 34, 36, 38 constituting the structural frame by welding, and the outward end of the central spar 60 is supported by a box beam 42 within the envelope of the assembly 26 through an end plate 64. The outward end of the forward spar 40 is supported by the box beam 42 through a vibration isolating arm 44.
Patent JP-S59109537-A (JP)
Title: Production of electromagnetic shielding material
Inventor: NISHIMURA KATSUMI
IPC: C08K7/04
Filed: 1982-12-15
Abstract: PURPOSE:To produce a material having a good electromagnetic shielding effect, by mixing a thermoplastic resin having a specified particle size with an electrically conductive fibrous filler in a rotating container type mixer and extruding the mixture. CONSTITUTION:Thermoplastic resin particles having a particle size of 2mm. or below, such as polyolefin or polystyrene particles, and 5-80wt% (based on the total quantity of the compsn.) electrically conductive fibrous filler having a fiber length of 0.5-10mm. and a fiber diameter of 10-200mu, such as metallic fiber, carbon fiber or metal-coated glass fiber, are mixed together in a rotating container type mixer such as a tumbler. The resulting mixture is extruded through an extruder (pref. one having a full-flighted screw) to form pellets, thus obtaining the titled electromagnetic shielding material.
Patent JP-S6278847-A (JP)
Title: Manufacture of semiconductor device
Inventor: FUJIE KOJI
IPC: H01L21/205
Filed: 1985-09-30
Abstract: PURPOSE:To form simultaneously the element regions and the dielectric isolation regions by a method wherein silicon oxide films are formed in the regions covering the buried diffusion regions, silicon nitride films are formed in the dielectric isolation region forming parts other than the silicon oxide films and a heat treatment is performed in an atmosphere of hydrogen. CONSTITUTION:Thin silicon oxide films 3 are formed in prescribed regions covering N-type buried diffusion regions 2 provided in a P-type silicon (single crystal semiconductor) substrate 1.The substrate 1 is heated in an atmosphere of nitrogen gas and a silicon nitride film 4 is formed on the whole surface of the substrate 1. The oxide film 3 and parts of the nitride film 4 are removed by heat-treating in an atmosphere of hydrogen gas. The temperature of a grow furnace is set at about 1,000-1,140 deg.C, a silane is poured and an epitaxial growth is executed. Hereby, epitaxially grown layers 5 having little cystal defect and an N-type conductive type by an auto-doping from the regions 2 are formed on the regions 2 and polycrystalline silicon layers 6 containing no impurity are formed on the nitride films 4 as dielectric isolation regions.
Patent JP-H03278110-A (JP)
Title: Constant-voltage generating circuit
Inventor: YAMAMOTO KAZUNARI
IPC: G05F3/20
Filed: 1990-08-20
Abstract: PURPOSE:To simplify the circuit scale by level-shifting a first reference voltage by a first level shift driving transistor and a first level shift constant-current source means, and level-shifting a second reference voltage by a second level shift driving transistor and a second level shift constant-current source means. CONSTITUTION:The circuit is provided with a first level shift driving transistor 72 for generating a third reference voltage V13, based on a first reference voltage V1, and a first level shift constant-current means 71 connected between a power source potential VDD and a first level shift driving transistor 72. Also, this circuit is provided with a second level shift driving transistor 82 for generating a fourth reference voltage V14, based on a second reference voltage V2, and a second level shift constant-current means 81 connected between the power source potential VDD and a second level shift driving transistor 82. In such a state, a third and a fourth reference voltages V13, V14 are applied to a first and a second input terminals 61, 62. In such a way, a reference output voltage generating part 60 can be operated by a single power source voltage.
Patent JP-H0768257-A (JP)
Title: Fresh water producing apparatus
Inventor: KAYANO HIDENORI
IPC: C02F1/44
Filed: 1993-09-02
Abstract: PURPOSE:To obtain fresh water in such a state that the production amt. of water is stabilized, to enhance the coefficient of utilization of raw water and to facilitate maintenance and control by controlling the suppry pressure of water to a reverse osmosis membrane device by controlling the opening degree of a flow control valve on the basis of the detection signal of a flow rate detector. CONSTITUTION:A part of the raw water supplied to a reverse osmosis membrane device 8 transmits through a reverse osmosis membrane to be taken out as fresh water from a transmitted water pipe 24 but, at this time, the amt. of transmitted water is measured by a flow rate detector 26 to be compared with a preset amt. When the amt. of transmitted water is more than the preset amt., a control signal is sent to a flow control valve 14 to increase the opening degree of the valve 14 and the pressure of the raw water supplied to the reverse osmosis membrane device 8 is reduced to reduce the amt. of transmitted water. When the amt. of transmitted water is less than the preset amt., a control signal is sent to the flow control valve 14 to reduce the opening degree of the valve 14 and the pressure of the raw water supplied to the reverse osmosis membrane 8 is increased to increase the amt. of transmitted water. By this constitution, the amt. of transmitted water can be held to an almost preset desired value.