baber/WOPTO huggingface dataset:
Patent JP-H10219601-A (JP)
Title: Vehicle capable of on-track traveling for ballasting track
Inventor: THEURER JOSEF
IPC: E01B27/16
Filed: 1998-02-10
Abstract: PROBLEM TO BE SOLVED: To provide a vehicle whose availablity at the time of ballasting a track is extended. SOLUTION: A lift 40 is arranged in the rear of a discharge chute 26 seen in the working direction, a side tie tamper 45 to tamp ballast in a head region on the side of a sleeper is arranged in the rear of the lift 40, the side tie tamper 45 has two tamping units 46 installed on vertical sides of a vehicle frame 7 separated from each other in the vehicle cross direction and height of which is free to be adjusted through a drive device 48, and each of the tamping units 46 is equipped with a plural number of tamping beaters 49 free to revolve in the vertical direction against the track longitudinal direction around a revolving shaft extending in the vehicle longitudinal direction as their center.  Consequently, a rail traveling carriage 6 on a front part seen in the working direction is made free to be adjusted in height relative to a rail traveling carriage 5 on a rear part by a height adjustment drive device 54.
Patent JP-H072909-A (JP)
Title: Production of spherical cross-linked copolymer
Inventor: ITO TAKESHI
IPC: C08F212/36
Filed: 1994-02-25
Abstract: PURPOSE:To provide a base material of a styrenic ion-exchange resin which hardly undergoes crushing or cracking on introducing ion-exchange groups into the material. CONSTITUTION:A mixture of a styrenic monomer with a cross-linking monomer is subjected to suspension polymn. under such condition that the number of exothermic peaks appearing until the conversion reaches 80% is 10 or lower. Thus, a base material of an ion-exchange resin having a low internal stress is obtd. merely by selecting suitable polymn. conditions.
Patent JP-S62186552-A (JP)
Title: Package for high frequency semiconductor element
Inventor: SEKIGUCHI TAKESHI
IPC: H01L23/66
Filed: 1986-02-12
Abstract: PURPOSE:To set the thickness of a dielectric layer arbitrarily in a size beneath a packaged substrate, which is restricted by mechanical strength and the like, by forming a power-supply conductor pattern and a ground potential conductor layer on the packaged substrate through the dielectric layer. CONSTITUTION:A ground potential conductor layer 2 is provided on a ceramic substrate 1' other than the vicinities of input signal lines 6 and output signal lines 7. A power-supply conductor pattern 4 is formed on the ground potential conductor layer 2 through a dielectric layer 3. The thinner the thickness of the dielectric layer 3 and the larger the width of the power-supply conductor pattern 4 are, the lower the characteristic impedance becomes. The ground potential conductor layer 2 can be utilized as a grounding layer when the input signal lines 6 and the output signal lines 7 are formed with coplanar transmission lines.
Patent JP-H06222078-A (JP)
Title: Probe fixing holder and contact probe
Inventor: SHIKAHAMA SHIGERU
IPC: G01R31/28
Filed: 1993-01-26
Abstract: PURPOSE:To provide a probe fixing holder in which assembling and integrating work of probe fixing holder having short pitch for loading a contact probe can be carried out quite easily and quickly and a defective contact probe can be replaced easily and quickly. CONSTITUTION:The holder 20 for fixing a contact probe 10 being used in the electric inspection of an electronic board, e.g. a printed board, comprises a hole part 22 for mounting the probe body 11 of the contact probe 10 detachably, and a plurality of probe fixing holes 21 comprising pin insertion hole parts 23 located continuously to the probe mounting hole part 22 and receiving the contact pin 13 of the contact probe 10. The pin insertion hole part 23 comprises a linear pin insertion hole part 23 having same hole length and a curved pin insertion hole part 23.
Patent JP-S55120146-A (JP)
Title: Apparatus for connecting in semiconductor
Inventor: KIMURA NAOTO
IPC: H01L21/60
Filed: 1979-03-12
Abstract: PURPOSE:To connect a work without rotating it by an apparatus for connecting in a semiconductor by mounting stages above a bonding head and driving the stages by rotating and moving motors, respectively. CONSTITUTION:There are provided a Q stage 10 rotatable by a rotating motor 3 installed on a stationary frame 12 and an r stage 11 movable in parallel by a moving motor 9 installed on the stage 10. A bonding head 7 is mounted on the stage 11. The apparatus thus constructed determines the bonding point on a work 13 via polar coordinates (r, Q). Thus, three motors used in the conventional apparatus is reduced to two to simplify the mechanism to bond the work restricted in its bonding direction without rotating the work.
Patent JP-H10211926-A (JP)
Title: Inner box for holding breakable article
Inventor: ANAHO TATSUO
IPC: A45D2/24
Filed: 1997-01-28
Abstract: PROBLEM TO BE SOLVED: To be able to put togather into a box shape easily when in use, to hold a breakable article in a stable condition and also to protect each of the breakable article surely by absorbing shock applied on the article from the bottom during transportation. SOLUTION: This inner box comprises a holding panel 2 provided with a suitable number of holding holes 1 placed at suitable intervals for holding a breakable article inserted from the top, a mounting panel 7 which is placed at the lower side of the holding panel 2 and on which the breakable article inserted in the holding hole 1 is mounted, and a bottom panel which is placed at the lower side of the mounting panel 7 and which constitutes a cavity with the mounting panel 7 for cushioning the breakable article. And the holding panel 2, the mounting panel 7 and the bottom panel are placed at suitable intervals vertically.  One or a plurality of catching holes 9 are provided in each end part of the mounting panel 7, and a catch panel having 1 or a plurality of catch pieces 10 for catching/releasing freely the catching hole 9 at the top end edge are provided in each end part of the bottom panel.
Patent JP-H04267520-A (JP)
Title: Manufacture of semiconductor device
Inventor: TAKEI YUKINORI
IPC: H01L29/78
Filed: 1991-02-22
Abstract: PURPOSE:To offer the manufacturing method, wherein the charge-up gate electrodes that is generated up during the manufacturing process of a semiconductor device in spite of the utilization of the layout of a conventional semiconductor device and a semiconductor manufacturing device can be reduced, of the semiconductor device in connection with the manufacturing method, wherein the charge-up of the gate electrodes that is generated in an ion implantation process at the time of the manufacture of the semiconductor device is prevented from being generated, of the semiconductor device. CONSTITUTION:A semiconductor device is constituted in such a way that source and drain regions are formed by performing an ion implantation in a semiconductor substrate using a high-resistance gate electrode material for gate electrode formation use connected to the above substrate as a mask and thereafter, the above high-resistance gate electrode material is patterned to form gate electrodes.
Patent JP-S57142523-A (JP)
Title: Flame detector
Inventor: SOGA MASANOBU
IPC: G01J1/42
Filed: 1981-02-28
Abstract: PURPOSE:To prevent the occurrence of an erroneous detection due to disturbance light and to enable detecting of a burning condition of a flame, by a method wherein a photo wave length detecting circuit and a photo strength detecting circuit are coupled to a photo sensor having two light collecting elements being different from each other in sensitivity to a photo wave length, and a flame is detected by finding the theoretical sum of the output. CONSTITUTION:A photo wave length detecting circuit 16 consists of logarithmic converters 4 and 5, a reducer 6, and a comparator 7, and is connected to a photo sensor 11 via an amplifiers 2 and 3. A photo strength circuit 17 consists of a composite device 10 and a comparator 11, and is coupled to the photo sensor 1 via the amplifiers 2 and 3. The sensor 1 is provided with two collecting elements 1a and 1b being different from each other in sensitivity to a photo wave length. When voltage setters 8 and 12 of each circuit recognize that a signal voltage corresponding to a photo wave length is equivalent to a given one and a strength of light to be detected exceeds a set strength, a high-level signal is fetched as a signal indicating a normal flame from an AND circuit 13.
Patent JP-H09200057-A (JP)
Title: Coded information processing unit
Inventor: TANAKA YOSHIAKI
IPC: G10L19/02
Filed: 1996-01-23
Abstract: PROBLEM TO BE SOLVED: To realize excellent quantized noise for all frequency bands by preventing increase in a high frequency noise level in the case of noise shaping processing. SOLUTION: Coded information of a PCM digital audio signal or the like received from an input terminal 1 is fed to a noise shaping circuit 2 and an HPF 4, a high frequency component of the signal processed by the noise shaping circuit 2 is eliminated by an LPF 3 and the low frequency signal and the high frequency signal whose low frequency component is eliminated by the HPF 4 and whose bit number is increased by a bit number conversion section 7 are added by an adder 5.
Patent JP-H03232203-A (JP)
Title: Bobbin for coil
Inventor: KONISHI ATSUSHI
IPC: H01F5/02
Filed: 1990-02-08
Abstract: PURPOSE:To make it possible to hook the starting end of the cross-over wire of a coil to a protrusion completely by a method wherein the stepped part made by the flange face of the first bobbin and the flange face of the second bobbin is positioned nearer to the side of bobbin spindle than the protrusion provided on the flange face of the first bobbin. CONSTITUTION:A protrusion 5a is shifted by the amount of distance (x) to the side of the opposing bobbin flange part 5i from the face 5c of the second bobbin flange. This distance (x) is a little larger than the outside diameter of a copper wire which constitutes a coil. Also, the stepping 5f, which makes the boundary between the first bobbin face 5d and the second bobbin flange face 5c, is in parallel with the straight line linking the point 6b to the apex 5g of the protrusion 5a, and the stepping 5f is shifted in the direction of bobbin axle by an amount of distance (g) from the above- mentioned straight line. The said distance (y) is a little larger than the outside diameter of the copper wire which constitutes the coil. As a result, when the start-of-winding part of a crossover wire 7a is rotated in D-direction while it is being pushed to the bobbin flange side with the point 6b as a supporting point in the state wherein the start-of-winding part of the crossover wire is located on the protrusion 5a, the start-of- winding crossover wire 7a is hooked to the protrusion 5a before running onto the stepping 5f.
Patent JP-S53114369-A (JP)
Title: Semiconductor detector for radiant ray
Inventor: MATSUO NOBORU
IPC: H01L31/09
Filed: 1977-03-16
Abstract: PURPOSE: To make it possible to detect rediant rays of a low-ray-amount rate as well as to reduce the leakage due to themally electromotive fored and the variations in off-set current of a sense amplifier and in dark current, by installing a plural number of radiant detection elements and the sense amplifier in the adiabatic container inside a sealed box. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H07219104-A (JP)
Title: Silver halide photographic sensitive material
Inventor: KINE YASURO
IPC: G03C1/035
Filed: 1994-01-31
Abstract: PURPOSE:To provide a silver halide photographic sensitive material leaving no curl in the base and excellent in sharpness and aging stability. CONSTITUTION:This silver halide photographic sensitive material has a silver halide emulsion layer on the base and is used in a rolled state. The base is made of poly(alkylene arom. dicarboxylate) having 50 to 200 deg.C glass transition temp. and it has been heat-treated at >=40 deg.C temp. below the glass transition temp. before coating with an emulsion. In t.he silver halide emulsion layer, flat platy silver halide particles which account for about 50% of the total projection area of all silver halide particles have an average aspect ratio of >=2.0.
Patent JP-H06243031-A (JP)
Title: Data processor
Inventor: NAOI YUICHI
IPC: G06F12/00
Filed: 1993-02-18
Abstract: PURPOSE:To improve the processing efficiency of a whole data processing system without permitting a shared memory to occupy a high speed data processing circuit by mapping the other section of the first memory to the second memory area. CONSTITUTION:A memory is alternately mapped to a shared memory area and a buffer area by controlling a swap buffer 114. Thus, the processing of an encoding circuit 113 in the shared memory area and the processing of a scanner data processing circuit 112 in the buffer area can be made efficient. When the memory capacity of the swap buffer 114 is appropriately set in accordance with the difference of processing speed between the read processing of scanner data and the encoding processing of scanner data and scanner data size. both processings are executed in parallel. Thus, they are not affected by the difference of processing speed.
Patent JP-S57143354-A (JP)
Title: Transparent and luminescent polymer composition and light converting material
Inventor: YAMAZOE KATSUHIKO
IPC: C09K11/02
Filed: 1981-02-28
Abstract: PURPOSE: The titled composition transparent in a visible light range, having improved light stability and luminous properties, suitable for mass production, comprising a specific amount of a specified luminescent substance of organic solvent-soluble rare earth element-containing salt of organic carboxylic acid and an organic solvent-soluble polymer.  
     CONSTITUTION: At least one organic solvent-soluble polymer, preferably polymethyl methacrylate, etc. soluble in tetrahydrofuran, etc. is blended with 0.03W 2.0pts.wt., preferably 0.05W1.5pts.wt. luminescent substance of organic solvent- soluble rare earth element-containing salt of organic carboxylic acid (e.g., europium toluylate, etc.) consisting of an organic carboxylic acid radical and europium and/or terbium. For example, this composition is prepared by adding a solution of the luminescent substance of rare earth element-containing salt of organic carboxylic acid in an organic solvent to a solution of the polymer in an organic solvent, stirring the solution, drying it. The composition has no absorption band at 400W800nm, is transparent, and exhibits luminescence of red green range. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-H04268043-A (JP)
Title: High cr steel for high strength line pipe excellent in weldability
Inventor: MIYASAKA AKIHIRO
IPC: C22C38/30
Filed: 1991-02-22
Abstract: PURPOSE:To provide a high Cr steel for high strength line pipe having high corrosion resistance to wet carbon dioxide and wet hydrogen sulfide and excellent in impact toughness in a weld heat-affected zone. CONSTITUTION:The steel has a composition consisting of 0.02-0.08% C, <=1% Si, <=2% Mn, 11-14% Cr, 1.1-4.0% Co, 0.005-0.2% Al, N by the amount reduced to <=0.015%, and the balance Fe with inevitable impurities, or further, respective contents of P and S are reduced or, if necessary, Ni, Cu, Mo, W, V, Ti, Nb, Ta, Zr, Hf, Ca, and REM are incorporated.
Patent JP-S60171729-A (JP)
Title: Manufacture of semiconductor device
Inventor: KURITA KAZUYUKI
IPC: H01L21/3065
Filed: 1984-02-17
Abstract: PURPOSE:To form a plurality of apertures having different depths in a semiconductor layer through a single etching process, by forming a plurality of etching mask layers with a combination of materials having remarkably different etching properties. CONSTITUTION:An etching mask layer 2 is formed on a semiconductor layer 1 to a relatively large thickness with a material which is relatively difficult to etch. Subsequently, another etching mask layer 3 is formed with a material easy to etch. A resist mask 5 is formed thereon such that it has apertures in the regions where deep apertures are to be formed and in the regions where shallow apertures are to be formed. The etching mask 3 is removed by etching to increase the depth of the apertures 4. A resist mask 5' having apertures 4 only in the regions where the deep apertures are to be formed is then formed, and the etching mask 2 is removed only from those regions. After the resist mask 5' not required any more is removed, the deep apertures 4' and the shallow aperture 4'' are formed in a common etching process by the reactive ion etching method for etching both PSG and the semiconductor.
Patent JP-S61188110-A (JP)
Inventor: ICHIHARA GOSUKE
IPC: B28B21/68
Filed: 1985-02-14
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H10227869-A (JP)
Title: Rainfall-region development and attenuation estimation apparatus
Inventor: SAKAINO HIDETOMO
IPC: G06F19/00
Filed: 1997-02-13
Abstract: PROBLEM TO BE SOLVED: To obtain a rainfall-region development and attenuation estimation apparatus whose computing costs are reduced and which can estimate the development and attenuation of a rainfall region on the basis of a radar image by a method wherein a change in the area value of the rainfall region in two-dimensional image information is extracted as a one- dimensional time-series signal, a nonlinear function is applied to the method of least squares on the basis of the signal and a change in an area several tens of frames ahead is estimated. SOLUTION: A rainfall-region development and attenuation estimation apparatus is constituted of an image input part 100 to which the radar image of a rainfall region is input, of an image storage part 110 in which a time-series image is stored, of an image processing part 120 in which a change in the area value of a stored two-dimensional image is extracted as a one-dimensional time-series signal, of a part 130 in which a nonlinear function is applied to the method of least squares on the basis of the signal, of an estimation part 140 in which a change in an area several tens of frames ahead is estimated on the basis of the nonlinear function regarding a change in a one-dimensional area in the past and of an output part 150. Since the development and attenuation of the rainfall region can be estimated on the basis of the one-dimensional signal of the area in this manner, the diffusion coefficient of a fluid equation can be made variable in advance according to the development and attenuation process of the rainfall region, and it is possible to prevent a drop in a hitting ratio even after two hours. In addition, since the one-dimensional signal is used, it is possible to obtain the rainfall-region development and attenuation estimation apparatus whose computing costs can be reduced and whose processing speed is high.
Patent JP-S56125872-A (JP)
Title: Semiconductor switchgear and its manufacture
Inventor: NAITOU MASAMI
IPC: H01L23/492
Filed: 1980-03-10
Abstract: PURPOSE:To uniformalize the action of active regions and improve reliability and producibility by a method wherein controlling electrode plates are formed, and the plates and one main electrode plates are unified through insulators. CONSTITUTION:Frame-shaped gate electrode plates 101 are made up which surround an N emitter group 5, the gate electrode plates 101 are unified with cathode electrode plates 10 through insulating films 102 and a gate-cathode unified electrode 100 is built up. The electrode plate 100 is pressure-welded to a base body 1 so that both the gate electrode plates 101 and a gate electrode 7 and both the cathode electrode plates 10 and cathode electrodes 6 contact. Thus, gate signals are equalized even to an active region near to a gate current extracting section 105 at the center of the base body 1 and an active region remote to the section, and the turn-OFF action of each active region is uniformalized.
Patent JP-2000227449-A (JP)
Title: Electronic type watt-hour meter
Inventor: NAKAMURA TETSUYA
IPC: H02J3/00
Filed: 1999-02-05
Abstract: PROBLEM TO BE SOLVED: To measure and display day-time electric power and night-time electric power, using one watt-hour meter. SOLUTION: A central operation part 39 controls a switch 34 for an exclusive output terminal 35 for an exclusive load 8 to be closed during only a night-time electric power time zone and to be opened in other time zone. Electric power detecting parts 36, 37, 38 detect all the time electric power output from an output terminal 33 and the exclusive output terminal 35, and the operation part 39 integrates separately day- time electric power and night-time electric power in response to the opening or closing condition of the switch 34. A display 4 displays individually a day-time power consumption and a night-time power consumption integrated by the operation part 39.  An electric power using form is constituted by this manner so that electric power is output all the time from both the output terminal 33 and the exclusive output terminal 35 only in a predetermined time zone per day while electric power taken in from an electric power source is made common, and so that the elctric power is output all the time from only the output terminal 33 in other time zone, and the night-time power consumption is separated thereby from that in the other time zone by one watt-hour meter to integrate and display the power consumptions in the respective time zones.
Patent JP-H02208304-A (JP)
Title: Production of high-rigidity polypropylene
Inventor: SAITO JUN
IPC: C08F110/06
Filed: 1989-02-08
Abstract: PURPOSE:To produce a high-regidity PP markedly excellent in transparency by polymerizing propylene by using a catalyst comprising a combination of a titanium trichloride composition containing a branched olefin polymer with an organoaluminum compound and an aromatic carboxylic ester. CONSTITUTION:A high-rigidity PP is produced by polymerizing propylene by using a catalyst comprising a combination of a TiCl3 composition (A) containing 0.01-99wt.% branched olefin polymer comprising repeating units formula II [wherein R<1> is an (Si-containing) 1-3C linear hydrocarbon group or Si; R<2>, R<3> and R<4> are each an (Si-containing) 1-6C linear hydrocarbon group or one of them may be a hydrogen atom] which is TiCl3 compositon obtained by subjecting a solid product obtained by reacting an organoaluminum compound or a reaction product thereof with an electron donor with TiCl4 and further reacting the product of this treatment with an electron donor and an electron acceptor to polymerization treatment with a branched olefin of formula I with an organoaluminum compound (B) and an aromatic carboxylic acid (C) in a component C to component A ratio of 0.1-10.0 and a component B to component A ratio of 0.1-200.
Patent JP-S62228936-A (JP)
Inventor: RICHIYAADO KAO
IPC: C12Q1/00
Filed: 1987-02-10
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S56125381-A (JP)
Title: Preparation of furan
Inventor: AI MAMORU
IPC: B01J23/00
Filed: 1980-03-08
Abstract: PURPOSE: To obtain furan in high yield, by oxidizing crotonaldehyde in the presence of phosphomolybdic acid or/and an alkali metallic salt thereof and oxygen in the vapor phase.  
     CONSTITUTION: Crotonaldehyde is oxidized in the presence of oxygen and phosphomolybdic acid generally expressed by the formula H 3 PMo 12 O 40 .nH 2 O or/and an alkali metallic salt thereof, e.g. sodium, potassium, rubidium or cesium salt, particularly cesium salt, at 250W400°C, preferably 300W360°C, to give furan in high selectivity. The catalyst is usually supported on a carrier. Preferably, the concentration of the oxygen is 2W10%, and the concentration of the crotonaldehyde is 0.1W5%. 
     COPYRIGHT: (C)1981,JPO&Japio