Patent SG-11201806268S-A (SG)
Title: SEAL RING FOR AL-Ge BONDING
Inventor: CHIDAMBARAM VIVEK
IPC: H01L23/48
Filed: 2017-01-26
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/138885 Al 17 August 2017 (17.08.2017) WIPO I PCT 111111111111110111011111111111010111110111111110111HHH1111111111111110111111 (51) International Patent Classification: H01L 21/50 (2006.01) B81C 3/00 (2006.01) H01L 23/48 (2006.01) (21) International Application Number: PCT/SG2017/050038 (22) International Filing Date: 26 January 2017 (26.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 10201601013Y 11 February 2016 (11.02.2016) SG (71) Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10 Connexis, Singapore 138632 (SG). (72) Inventors: CHIDAMBARAM, Vivek; c/o Industry De- velopment, Institute of Microelectronics, 2 Fusionopolis Way, #08-02, Innovis Tower, Singapore 138634 (SG). SIOW, Li Yan; c/o Industry Development, Institute of Mi- croelectronics, 2 Fusionopolis Way, #08-02, Innovis Tower, Singapore 138634 (SG). ZHANG, Qing Xin; c/o Industry Development, Institute of Microelectronics, 2 Fu- sionopolis Way, #08-02, Innovis Tower, Singapore 138634 (SG). WICKRAMANAYAKA, Sunil; c/o Industry Devel- opment, Institute of Microelectronics, 2 Fusionopolis Way, #08-02, Innovis Tower, Singapore 138634 (SG). (74) Agent: SPRUSON & FERGUSON (ASIA) PTE LTD; P.O. Box 1531, Robinson Road Post Office, Singapore 903031 (SG). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. [Continued on next page] (54) Title: SEAL RING FOR AL-Ge BONDING 300 (57) : There is provided a method of bonding a first substrate and a second substrate, the method comprising: providing an aluminium (Al) connection having a first width on one side of a first substrate; providing a germanium (Ge) connection having a second width on one side of a second substrate, wherein the second width is larger than the first width; and bonding the Al connection on the first substrate and the Ge connection on the second substrate by eutectic bonding of at least a portion of the Al connection and at least a portion of the Ge connection to form an Al-Ge eu- tectic melt, wherein the Al-Ge eutectic melt is confined within the second width of the Ge connection. 302 Cap Wafer Stand-off Ge 306 308 A W O 20 17 / 138885 Al 304 Device Wafer Figure 3 WO 2017/138885 Al MIDEDIMOMOIDEIR0101301110MBHMODEVOIMI (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: of inventorship (Rule 4.17(iv)) Published: with international search report (Art. 21(3))