baber/WOPTO huggingface dataset:
Patent JP-H10233691-A (JP)
Title: Encoding system and decoding system
Inventor: IWADARE MASAHIRO
IPC: H03M7/30
Filed: 1998-03-30
Abstract: PROBLEM TO BE SOLVED: To improve encoding efficiency even in the case that the amplitude distribution of frequency components is not uniform by providing respectively one or more quantization parts for encoding all the frequency signals of a block and quantization parts for encoding only the frequency signals of a part of the block in the plural quantization parts. SOLUTION: Digitized audio signals are inputted from an input terminal 1 and the signals are band-divided and converted to 32 pieces of the frequency signals every time the 32 pieces of audio signal samples are inputted in a signal conversion part 2. The 32 pieces of the frequency signals are turned to one set and the 12 sets of the frequency signals are stored. In an analysis part 3, by using the inputted audio signals and the frequency signals, the size of an allowable error is calculated for the respective frequency signals. A quantization part selection part 4 performs adjustment so as to make the size of the quantization error of the respective frequency signals be proportional to the size of the allowable error and decides the respective quantization parts so as to house a bit number required for encoding all the blocks within an allowable range determined from a transmission rate.
Patent JP-H01255229-A (JP)
Title: Resin sealed type semiconductor device
Inventor: NODA TOSHIO
IPC: H01L23/28
Filed: 1988-04-04
Abstract: PURPOSE:To suppress the cracking of a bonding agent at the hardening time of the bonding agent and the cracking of a package due to heat hystory, by inserting a buffer plate having at least one or more through holes in the the thickness direction at a bonding agent part between a semiconductor element and a lead frame. CONSTITUTION:A semiconductor element 14 is bonded to an island part 12 of a lead frame 11 through a bonding agent 13 in a resin sealed type semiconductor device. A buffer plate 17 having at least one or more through holes in the thickness direction is inserted at the part of the bonding agent 13 between the semiconductor 14 and the lead frame 11. For example, The buffer plate 17 is inserted, and the pellet 14 is fixed to the island part 12 of the lead frame 11 by using the bonding agent 13. The electrode part on the pellet 14 and the lead frame 11 are connected with metal wire 15. Molding is performed with a sealing resin 16. The buffer plate 17 is inserted by the following way: the bonding agent 13 is applied; thereafter, the buffer plate 17 is mounted on the bonding agent 13; then, the pellet 14 is brought in; When scrubbing is performed, the bonding agent flows and creeps up on the upper part of the buffer plate 17.
Patent JP-H01255047-A (JP)
Title: Plural data inputting and plural test data generating system
Inventor: MATSUSHITA HIROKO
IPC: G06F11/22
Filed: 1988-04-05
Abstract: PURPOSE:To generate separate single or plural slave data files newly by extracting and combining master data having record specification information designated from plural master data files. CONSTITUTION:A combination information designation means 1 designates the record classification information of the master data to be outputted from the master data file 4 to the slave data file 8 as combination information 11. A combination information input means 2 inputs the combination 11, and a file open means 3 decides the slave file 8 which outputs the master data. A master data input means 5 reads in the master data from the master file 4, and a master data decision means 6 compares the combination information 11 with the record specification information of the master data. A slave data output means 7 outputs the master data related to the master data decided as to be outputted as the slave data to be slave file 8 by the means 6. Next, a file close means 9 closes the master file 4 and the slave file 8, and a data control means 10 controls each means.
Patent JP-H06300470-A (JP)
Title: Triple pipe type heat exchanger and heating and cooling unit
Inventor: KURODA AKIO
IPC: F28D7/10
Filed: 1993-04-09
Abstract: PURPOSE:To provide a triple pipe type heat exchanger wherein an inner pipe can be easily inserted into a center pipe, no liquid leaks or stays, the heat transfer performance is improved and the installation space is small. CONSTITUTION:The triple pipe type heat exchanger is provided with an inner pipe 4 which has one end 5 welded to a center pipe 1 with inlet and outlet opening 2 and 3 for the fluid to be treated and the other end 6 closed. The inner pipe 4 is provided with inlet and outlet opening 7 and 8 for heating medium and its interior is divided into two by a partition plate 9 provided in the axial direction and one end part of the partition plate 9 is provided with a communicating part 10 to form a U-shaped liquid flowing part. An outer pipe 11 is provided on the exterior wall of the center pipe 1 and has inlet and outlet openings 12 and 13 for the heating medium. As a result, a compact-sized heat exchanger is produced.
Patent JP-H09273900-A (JP)
Title: Blasting process
Inventor: ARAMAKI SHOSAKU
IPC: C06B31/28
Filed: 1996-04-05
Abstract: PROBLEM TO BE SOLVED: To make it possible to conduct the operation by an operator without feeding discomfort by spraying and/or scattering acidic substance of necessary amount previously at a place where detonating explosive is leaked, thereby suppressing the generation of ammonia by the reaction of ammonium nitrate with basic substance. SOLUTION: When detonating explosive containing ammonium nitrate and fuel as main components is charged, suitable amount of liquid or solid acidic substance is sprayed or scattered at a place where the explosive is predicted to be leaked to suppress the ammonia generated from the nitrate in the explosive by lowering the basicity of the surface of the basic substance or neutralizing the generated ammonia to suppress the dissipation of the ammonia into the atmosphere. The acidic substance to be used is preferably boric acid, hydrochloric acid, nitric acid or sulfuric acid in the case of using inorganic material and carboxylic acid in the case of using organic material. Thus, an operator can operate without feeding discomfort. Since it is not necessary to add acidic substance to the explosive, a manufacturing facility is not complicated.
Patent JP-S58199558-A (JP)
Title: Semiconductor device
Inventor: HAYASHI KIKUO
IPC: H01L27/04
Filed: 1982-05-17
Abstract: PURPOSE:To reduce the variation of the voltage of a substrate by forming substrate voltage smoothing condensers on the back and side faces of a substrate. CONSTITUTION:A substrate has a double structure, and a main circuit and a substrate bias generator are formed in the internal conductive layer 11. Smoothing condensers are formed by forming conductive layers 12 on the back and side faces of the layer 11. In N-channel MOS, the layer 11 becomes P type and the layer 12 becomes N type. When the layer 11 is set to zero VSS and the layer 12 is set to the substrate voltage VBB, a large junction capacity is formed between the layers 11 and 12, thereby enabling to active the back and side faces of a chip as the regions of all smoothing condensers. In this manner, a large capacity condenser which cannot be formed in the conventional substrate can be formed, and stable substrate voltage of small variation can be obtained.
Patent JP-S61243498-A (JP)
Inventor: TAKAGI YOSHIYUKI
IPC: G10H7/00
Filed: 1985-04-20
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H04318199-A (JP)
Title: Electroplating device
Inventor: HIROSE TATSUYA
IPC: C25D7/12
Filed: 1991-04-16
Abstract: PURPOSE:To attain uniformity of plating thickness by improving continuity between a metal layer and an electrode in an electroplating device for electroplating by bringing, the electrode into contact with the metal layer under a mask layer on a substrate. CONSTITUTION:The etching vessels 10a, 10b which are formed to a truncated cone shaped bellows are provided in a plating vessel 2, and the supporting panels 12a, 12b and the rubbers 14a, 14b are provided on the upper opening of the described etching vessels 10a, 10b to place the mask layer 7 on the semiconductor wafer 5. Etching is executed to bring contact electrodes 15a, 15b into contact with each other in the plating processing while circulating the etching 18 in the etching vessels 10a, 10b so as to reduce pressure in the etching vessels 10a, 10b.
Patent JP-S57199669-A (JP)
Title: Dot printing head
Inventor: MURANO TOSHIROU
IPC: B41J2/28
Filed: 1981-06-02
Abstract: PURPOSE:To cut magnetic flux resulting from a permanent magnet by a small electric power by using a system in which a subbypath is provided to the electromagnetic circuit of electromagnetic coil in a spring charge type dot printing head in such a way as to reduce the magnetic resistance of the magnetic circuit with reference to the electromagnetic coil. CONSTITUTION:Under the condition that electricity is not supplied to the first and second electromagnetic coils 6 and 7, the magnetic flux 11 of a permanent magnet 2 passes through the magnetic paths i.e. , the permanent magnet 2-the fit bypath 4 of core 3 and the second bypath 5-armature 9-yoke 1-permanent magnet 2. When electromagnetic coils 6 and 7 are energized by a printing command, the magnetic flux 11 of the permanent magnet 2 is erased by the magnetic fluxes 13 and 14 and the armature 9 is turned counterclockwise by the reaction of a plate spring 8. In this case, since the amount of the magnetic flux of the electromagnetic coils 6 and 7, passing through two bypaths 4 and 5 of the core 3 which are the magnetic paths for the magnetic flux 11 of the permanent maget 2, is very small, magnetic resistance can be lessened for the electromagnetic coils and electric power required for energization can also be reduced.
Patent JP-H03283574-A (JP)
Title: Semiconductor device and manufacture thereof
Inventor: ARAKI SHOJIRO
IPC: H01L29/78
Filed: 1990-03-30
Abstract: PURPOSE:To improve a breakdown strength between elements of MOS transistors and to prevent characteristic malfunction of the element upon formation of an element separating insulating film by providing an interval to source.drain regions, and incorporating one conductivity type channel stopper region formed at the lower part of the film. CONSTITUTION:A P<+> type channel stopper region 5 formed at the lower part of a field oxide film 2 is provided at an interval to a source region 4a and a drain region 4b. Accordingly, according to a MOS transistor, since the region 5 is formed at the interval to the regions 4a, 4b, both the regions 4a, 4b are not brought into contact with one another. Therefore, an N<+>-P<+> type junction is not formed. Instead, an N<+>-P-P<+> junction structure is provided, and breakdown strength of the structure is determined according to the impurity concentration of a P-type silicon substrate 1. Here, since the impurity concentrations are so set that the N<+> type is about 10<20>cm<-3>, the p is about 10<16>cm<-3> and the P<+> type is about 10<19>cm<-3>, it can be expected to logically improve hundreds of times as large as the case of a conventional N<+>-P<+> type junction.
Patent JP-2000273477-A (JP)
Title: Refrigerating machine oil composition
Inventor: SHIMOMURA YUJI
IPC: C10M105/36
Filed: 1999-03-26
Abstract: PROBLEM TO BE SOLVED: To obtain the subject composition excellent in lubricity, refrigerant compatibility, and the like, when used together with a hydrofluorocarbon refrigerant and a natural-based refrigerant, by including a specific cis-type alicyclic dicarboxylic acid ester compound. SOLUTION: This composition is obtained by including (A) a cis-type alicyclic dicarboxylic acid ester compound having an alicyclic ring and two ester groups each of the formula COOR1 (R1 is a 1-30C hydrocarbon group), wherein the two ester groups are bound to carbon atoms adjacent to each other on the alicyclic ring taking a cis-form with respect to the orientation of the two ester groups, and as necessary, (B) a systhetic oil containing oxygen, (C) various additives, and the like. The alicyclic ring is e.g. a cyclopentane ring, a cyclopentene ring, a cyclohexane ring, a cyclohexene ring, cycloheptane ring, a cycloheptane ring, being pref. a cyclohexane ring or a cyclohexene ring, more pref. a cyclohexene ring.
Patent JP-S568985-A (JP)
Title: Circuit reservation system of key telephone set
Inventor: SHIKAYAMA KIYOSHI
IPC: H04Q3/545
Filed: 1979-07-04
Abstract: PURPOSE:To make it possible to offer circuit reservation service with efficiency by acquiring an external circuit only in a certain time until a telephone set sends an outgoing signal when the external circuit is not engaged with the external circuit selection button of the telephone set operated. CONSTITUTION:Main control unit MCU is equipped with a processor and office units SLU1-SLUm that are equipped with processors well as have the functions of connecting with an external circuit. Further, terminal units TEU1-TEUn are also equipped with processors and connected to key telephone sets MFT1-MFTn through voice circuits VL1-VLn and data circuits DL1-DLn. Then, when the external circuit is not engaged in case that external circuit selection buttons, not shown in the figure, of those telephone sets MFT1-MFTn are operated, the external circuit is acquired only in a certain time until telephone sets MFT1 and MFT2 send  originating signals. Consequently, the circuit reservation service can be offered with  efficiency.
Patent JP-H11279589-A (JP)
Title: Antibacterial detergent for housing
Inventor: OKUMURA KAZUFUMI
IPC: C11D3/06
Filed: 1998-03-30
Abstract: PROBLEM TO BE SOLVED: To obtain a detergent which gives excellent antibacterial properties to an object to be washed without detriment to detergency by admixing a nonionic and/or an amphoteric surfactant, a cationic surfactant having a phosphate ion as a counter ion, an alkali agent, a glycol ether type solvent and a silicone in a specific ratio. SOLUTION: The detergent comprises 0.1-15 wt.% of a nonionic and/or an amphoteric surfactant, 0.01-10 wt.% of a cationic surfactant of formula I, 0.05-10 wt.% of an alkali agent, 0.5-15 wt.% of a glycol ether type solvent and 0.1-10 wt.%, in terms of non-volatile components, of a silicone emulsion. In the formula, R<1> is a 10-18C alkyl or alkenyl; R<2> and R<3> are each a 1-5C alkyl; R<4> is a 2-4C alkylene; n is 1-5; m is 1 or 2; and X is formula II or formula III (wherein R<5> -R<7> are each a 1-12C alkyl, alkenyl or a residue of an polyoxyalkylene alkyl ether obtained by adding an alkylene oxide to a 1-12C aliphatic alcohol).
Patent JP-S5419151-A (JP)
Title: Multishunt constant voltage device
Inventor: TSUYA NAOKI
IPC: G05F1/10
Filed: 1977-07-13
Abstract: PURPOSE: To reduce the calorific value of shunt circuits by parallelly connecting the respective shunt circuits to a number of power sources connected in parallel and sequentially controlling the impedance of the respective shunt circuits corresponding to error signals. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-S539055-A (JP)
Title: Process for treating waste water by electrolytic oxidation
Inventor: TSUJI SABUROU
IPC: C02F1/469
Filed: 1976-07-14
Abstract: PURPOSE: To treat waste water containing COD substane including gaseous polluted material in electrolytic oxidation by electrolytically oxidizing the waste water in the positive electrode chamber of an electrolytic tank after degassing the waste water with acid. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-S61241977-A (JP)
Title: Manufacture of semiconductor device
Inventor: MATSUBARA YUJI
IPC: H01L21/22
Filed: 1985-04-18
Abstract: PURPOSE:To prevent deterioration in withstand voltage and machinability of a gate insulating film, by sequentially depositing a polycrystalline silicon film and a high-melting-point metal silicide film on the gate insulating film, performing patterning, obtaining a specified gate electrode pattern, thereafter implanting impurities in the entire surface, and performing heat treatment. CONSTITUTION:On the surface of a silicon substrate 11, a field oxide film 12, a gate oxide film 13, a polycrystalline silicon film 14, and electrode pattern 16 is formed, N-type impurity ions are implanted in the WSi2 film 15 and source and drain regions. High-temperature annealing is performed, and the source and drain regions 17 and a thermal oxide film 18 are formed. At the same time, impurities are diffused from the WSi2 film 15 to the polycrystalline Si film 14. Thereafter, an Al electrode 20 is formed. Thus, deterioration in withstand voltage of the gate insulating film can be prevented, and the machinability in the minute machining can be improved. Processes can be also simplified.
Patent JP-H01256215-A (JP)
Title: Semiconductor integrated circuit device
Inventor: KAMATA MINORU
IPC: H03K17/567
Filed: 1988-04-06
Abstract: PURPOSE:To reduce a through-current between NPN transistors(TRs) caused in the switching by forming a bypass circuit for the NPN TRs forming an output stage by an NMOS TR having a voltage characteristic. CONSTITUTION:Since a base and a collector of a 2nd NPN TR 15 are short- circuited via a 1st NMOS TR 11, a base current is supplied to the base of the 2nd NPN TR 15 from an output 18, the 2nd TR 15 is turned on and an output 17 goes to a '0' level. The gate of a 3rd NMOS TR 13 is connected to a power terminal 1 via a resistor to prevent destruction of the gate film due to power fluctuation. Since a voltage characteristic is provided, the TR acts like a current limiter in the operation to stabilize the output current and acts like a high resistance in the nonoperating state. Thus, the leakage current is reduced.
Patent JP-H07292498-A (JP)
Title: Automatic plating device
Inventor: AOKI KEIJI
IPC: C25D17/08
Filed: 1994-04-22
Abstract: PURPOSE:To automate the treatment of a plating device and to execute precise plating. CONSTITUTION:This plating device is composed of a loader, pretreating vessel, washing vessel, plating vessel, washing vessel, post-treating vessel, washing vessel, drying vessel and unloader. The automatic treatment is successively executed by front and rear transporting machines. The plating vessel is formed of an anode plate 32, an insulating cylinder 31 and nitrogen bubble generators 35, 36. The current concentration to substrate ends is prevented by the insulating cylinder 31 having the diameter equal to the diameter of the substrates which are the objects to be plated. Liquid exchange is made vigorous by nitrogen bubble flow and eventually the film thicknesses are made uniform. These structures do not hinder automatic transportation. Electricity is fed to the substrates at need from both of the transporting machines and the plating vessel, by which etching of plating substrate films is prevented and accuracy is improved.
Patent JP-S5512135-A (JP)
Title: Abrasion resistant paint
Inventor: OGAWA TOSHIYUKI
IPC: C08L27/00
Filed: 1978-07-11
Abstract: PURPOSE: to provide the title paint having excellent abrasion resistance and useful as a plastic bearing material, mainly composed of a mixture obtained by adding a specific amount of an organic solvent solution of polyimide(amide) to an organic solvent dispersion of perfluoroalkoxy resin powder.  
     CONSTITUTION: A paint obtained by mixing (A) a dispersion obtained by dispersing (a) 100 parts by weight of perfluoroalkoxy resin powder in (b) an organic solvent such as dimethylformamide, etc., and (B) a solution obtained by dissolving (C) 0.3-400 parts by weight of polyimide or polyimideamide in (d) an organic solvent such as dimethylformamide, etc.  
     EFFECT: Excellent adhesivity to the substrate. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-S5419191-A (JP)
Title: Cable continuous vulcanization extruder
Inventor: MARUHASHI KATSUHIRO
IPC: B29C48/515
Filed: 1977-07-14
Abstract: PURPOSE:To obtain a satisfactory mixing effect without lengthening screws by setting up a crosslinking agent press fit hole from the rear end of the screw to the center in the axial direction and a number of extrusion holes branched from it at the opposed location of the screw bottom.
Patent JP-H10261836-A (JP)
Title: Semiconductor laser device and its manufacture
Inventor: TAKAHASHI TAKASHI
IPC: H01S5/00
Filed: 1997-03-18
Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor laser device which can be manufactured inexpensively through a simple manufacturing process and a method for manufacturing the laser device. SOLUTION: A semiconductor layer device 100 is constituted by successively forming an n-type InP clad layer 102, an undoped InGaAsP active layer 103, a p-type InP clad layer 104, and a p-type InGaAsP contact layer 105 on an n-type InP substrate 101 and etching the laminated body in a stripe-like mesa. Then, after an undoped InGaP/InP strained supperlattice structure 106 and an undoped InP buried layer 107 are formed on the n-type InP clad layer 102, a high-resistance area 108 is formed by injecting protons and a p-side ohmic electrode 109 is formed. On the backside of the the substrate 101, in addition, an n-side ohmic electrode 110 is formed.
Patent JP-H03282134-A (JP)
Title: Air conditioner
Inventor: WADA KOJI
IPC: F24F13/22
Filed: 1990-03-30
Abstract: PURPOSE:To facilitate storing a drain hose, contrive higher workability in draining and reduce the number of component parts, by providing a drain hose-storing part integral with a wall of a portable main body so that a tip part of the drain hose can be detachably fitted in the storing part, with an intermediate part of the hose bent upward. CONSTITUTION:At times other than the time cf draining water collected in a water pan 56 for maintenance or the like, an intermediate part of a drain hose 70 connected to the pan 56 is bent upward substantially perpendicularly, as indicated by two-dotted chain lines, and a tip part of the hose 70 is fitted into a drain hose-storing part. Bent pieces 66b... constituting the storing part 66 are projected alternately in forward and backward directions, and are curved in roughly sami-circular form The bent pieces 66b, 66b thus projected alternately forward and backward are combined to have a truecircular overall configuration, with a diameter slightly smaller than the diameter of the hose 70. At the time of cleaning the interior of the water pan 56, the hose 70 is removed from the storing part 66, and is extended to the outside of a rear panel 30a. The tip part of the hose 70 ls set at a lower level than the bottom surface of the water pan 56, enabling the water collected in the pan 56 to be completely discharged.
Patent JP-S569512-A (JP)
Title: Structure of platform constructed on water surface and method of constructing the same
Inventor: ANDOU MAMORU
IPC: E02B17/00
Filed: 1979-07-04
Abstract: PURPOSE: To minimize the influence of water flow acted near the water surface, by employing an upper support leg for supporting a platform in a plane parallel to lower support legs.  
     CONSTITUTION: Downwardly of upper support leg 6', there is provided a leg connecting structure 5 which includes a plurality of tubular connecting members 8 and is formed with a passage or passages ( not shown ). Upper portions of lower support legs 4 are inserted into respective tubular connecting members 8, and they are  fixed together by means of ringlike stress transmitting plates 11 disposed around  throughholes 10 and filler material 12 such as mortar filled in space l. 
     COPYRIGHT: (C)1981,JPO&Japio