baber/WOPTO huggingface dataset:
Patent TW-I266812-B (TW)
Title: Metal surface treatment agent, and metal material coated with same
Inventor: OUCHI TAKASHI
IPC: C23C30/00
Filed: 2001-11-02
Granted: 2006-11-21
Abstract: A metal surface treatment agent comprising the following components (A) to (D), which securely adheres to a metal substrate such as aluminum, exhibits excellent corrosion preventive properties even with a thin film thickness, and has excellent plasticity and adhesion to paints. (A) At least one type of organosilicon compound having three carbonyl groups and at least one alkoxysilyl group, in a weight ratio of 5 to 15 when the total of the components (A) to (D) is 100; (B) at least one type of epoxy resin modified with an alkanolamine, in a weight ratio of 10 to 30 relative to the above total; (C) at least one blocked diisocyanate, in a weight ratio of 50 to 70 relative to the above total; and (D) at least one type of amino resin in a weight ratio of 5 to 15 relative to the above total.
Patent TW-539836-B (TW)
Title: A compressor control system and a cooling system
Inventor: PHAM HUNG M
IPC: F04C27/00
Filed: 2001-12-11
Granted: 2003-07-01
Abstract: A cooling system controller controls the capacity of a variable capacity compressor based upon the temperature of a housing being cooled, the suction pressure of the compressor or both of these criteria. The cooling system controller is capable of controlling either single-evaporator or multiple-evaporator refrigeration systems. The multiple-evaporator systems can have evaporators of similar temperatures or of mixed temperatures. The controller also allows the use of one or more condenser fans that are operated in a lead/lag fashion to control the cooling capability of the system.
Patent TW-568827-B (TW)
Title: Method for forming card with counterfeit-proof mark
Inventor: HUANG JR-YANG
IPC: B29D7/00
Filed: 2001-12-31
Granted: 2004-01-01
Abstract: A method for forming a card with a counterfeit-proof mark is applicable on the production of a credit card or an ordinary ATM card, and comprises: producing a template with a desired pattern provided by a customer; using an injection forming technique to copy the pattern on the template to the surface of a card; using a sputtering method to coat a metal layer on the surface of the card to increase its reflective property; and printing a printing layer on the surface of the card. Thus, a card with a laser-like image can be produced.
Patent TW-528658-B (TW)
Title: Beveling wheel for processing silicon wafer outer periphery
Inventor: KUMAMOTO KENICHIRO
IPC: B24D3/02
Filed: 2001-12-31
Granted: 2003-04-21
Abstract: The object of this invention is to the substance of the metal pollution of the beveling wheel in the beveling processing of a silicon wafer and exclude the causes of the pollution in order to obtain a high quality beveling processing of the wafer. The aforementioned object is achieved by elucidating that in the metal components contained in the metal bonding agent of the beveling wheel, copper, nickel and zinc are liable to diffuse to the wafer in order to accomplish this invention. That is, a beveling wheel 10 has a grinding particle layer 2 formed with one or more grooves 3 and adhered to the outer periphery of a metal core 1. The bonding material of the grinding particle layer 2 is a metal bonding agent. The metal powder in the bonding agent is composed of a metal powder that contains neither of the copper, nickel and zinc.
Patent TW-542936-B (TW)
Title: Imaging system, program used for controlling image data in same system, method for correcting distortion of captured image in same system, and recording medium storing procedures for same method
Inventor: WAKAMOTO SETSUNOBU
IPC: H04N5/225
Filed: 2002-02-08
Granted: 2003-07-21
Abstract: An imaging system of the present invention includes: a reflecting mirror having a geometry of one of two sheets of a two-sheeted hyperboloid; and an imaging section which includes an imaging device for receiving light concentrated by a lens having a center located in any position opposing the reflecting mirror on a rotation axis of the reflecting mirror, wherein the imaging system includes a correction section for performing coordinate transformation on captured image data obtained by capturing an image of a prescribed inspection drawing so as to produce a perspective transformed image data and for correcting distortion in the captured image based on a value regarding a distance between a lens position adapted for the coordinate transformation and a light-receiving surface of the imaging device.
Patent TW-552548-B (TW)
Title: Audience rating survey system
Inventor: HASHIMOTO MINORU
IPC: H04N21/442
Filed: 2002-02-20
Granted: 2003-09-11
Abstract: The system registers a user ID, which specifies a viewer/listener of a network-distributed program, associated with characteristic parameters that indicate characteristics of the viewer/listener; acquires a user ID, a device ID, a program ID; and carries out an audience rating survey of the network-distributed program based on the user ID, device ID and program ID, and characteristic parameters associated with the user ID, thereby allowing for an effective and accurate audience rating survey of, for example, an Internet-broadcasted program.
Patent TW-571148-B (TW)
Title: Light conductor, lighting apparatus, and liquid crystal display
Inventor: FUJISHIRO FUMIHIKO
IPC: G02F1/1335
Filed: 2002-05-08
Granted: 2004-01-11
Abstract: Light is input into an incident surface portion from a fluorescent lamp, and most of the light propagates in repetition directions. Since a length of an emission portion of the fluorescent lamp is shorter than that of the incident surface portion, there are areas to which no light propagates and dark portions generate in the repetition directions of a string of prisms. Since these dark portion generate out of the display area, a display quality is improved.
Patent TW-536808-B (TW)
Title: Semiconductor integrated circuit device and designing method for semiconductor integrated circuit device
Inventor: KATOH NAOKI
IPC: G06F17/50
Filed: 1998-12-10
Granted: 2003-06-11
Abstract: Disclosed is a semiconductor integrated circuit device constructed of MOSFETs in which there is attained a harmony between increase in consumption power due to a leakage current and operating speed of the MOSFETs in a suitable manner, and among a plurality of signal paths in the semiconductor integrated circuit device, a path which has a margin in delay is constructed with MOSFETs each with a high threshold voltage, while a path which has no margin in delay is constructed with MOSFETs each with a low threshold voltage which has a large leakage current but a high operating speed, in light of a delay with which a signal is transmitted along a signal path.
Patent TW-I220482-B (TW)
Title: Method and apparatus for fast signal convolution using separated-spline kernel
Inventor: COPELAND DAVID JEREMY
IPC: G06T5/20
Filed: 2002-05-29
Granted: 2004-08-21
Abstract: A fast convolution method applicable to convolving a signal (indicative of an n-dimensional pattern, where n is greater than or equal to two) with a smooth kernel that can be approximated by a separated-spline kernel, and a system configured to perform such method using software or signal processing circuitry. Unlike Fourier-based convolution methods which require on the order of N logN arithmetic operations for a signal of length N, the method of the invention requires only on the order of N arithmetic operations to do so. Unlike wavelet-based convolution approximations (which typically also require more arithmetic operations than are required in accordance with the invention to convolve the same signal), the method of the invention is exact for convolution kernels which are spline kernels.
Patent TW-I272700-B (TW)
Title: Semiconductor device having a coil with large value of Q
Inventor: MIYAGI HIROSHI
IPC: H01F17/00
Filed: 2002-07-02
Granted: 2007-02-01
Abstract: It is object to provide a semiconductor device capable of forming a coil on a semiconductor substrate, which is having large inductance and large value of Q. A semiconductor device 10 is configured with comprising a rectangular-shaped semiconductor substrate 12, plural of pads 20 formed near four corners of the semiconductor substrate 12, plural of pads 30 formed on periphery areas along each sides of the semiconductor substrate 12 except the four corners area, and bonding wires 40 for connecting the adjacent pads 20. The coil is formed by putting the bonding wires 40 around the semiconductor substrate 12 with using the pads 20 formed near the corners.
Patent TW-550788-B (TW)
Title: Semiconductor circuit
Inventor: TERASHIMA TOMOHIDE
IPC: H01L21/8249
Filed: 2002-07-12
Granted: 2003-09-01
Abstract: A semiconductor circuit is provided which has a high breakdown voltage and is capable of outputting a large current. Field transistors (Q1, Q11) are cross-coupled. The gate of the first field transistor (Q1) and the drain of the second field transistor (Q11) are not directly connected to the drain of an MOS transistor (Q4) but are connected to the base of a bipolar transistor (Q12). The second field transistor (Q11) has its source connected to the collector of the bipolar transistor (Q12) and the MOS transistor (Q4) has its drain connected to the emitter of the bipolar transistor (Q12). When the current amplification factor of the bipolar transistor (Q12) is taken as beta, then the current of the output (SO) can be increased approximately beta times.
Patent TW-540106-B (TW)
Title: Manufacturing process of increasing trench capacitance
Inventor: TSAO LI-WU
IPC: H01L21/265
Filed: 2002-07-24
Granted: 2003-07-01
Abstract: The invention provides a kind of manufacturing process for increasing the trench capacitance. The invention is suitable for use in a substrate having a pad layer structure and a trench, and includes the following steps: forming a ring shape insulation layer on the upper part of the trench sidewall; performing the first stage of ion implantation process to implant ions into the trench sidewall in a specified angle for destroying the substrate lattice structure of the trench sidewall uncovered by the ring-shaped insulation layer; performing the second stage of ion implantation process to vertically implant ions into the trench bottom part for destroying the substrate lattice structure of the trench bottom part; and conducting an etching process to remove the destroyed substrate part inside the trench.
Patent TW-564489-B (TW)
Title: Method for improving contact hole patterning
Inventor: TSAI YAW-MING
IPC: G03F7/40
Filed: 2002-07-25
Granted: 2003-12-01
Abstract: A LCD panel is provided, the LCD panel having a substrate, a conductive layer positioned on the substrate, and a dielectric layer disposed on the surface of the conductive layer. First, a photoresist layer with an opening is formed on the dielectric layer. An etching process is then performed to form a contact hole along the opening. After that, a post treatment is performed to form a protective layer to reduce damage on the conductive layer when the photoresist layer is stripped.
Patent TW-552665-B (TW)
Title: Method for cleaning ceramic member for use in system for producing semiconductors, cleaning agent and combination of cleaning agents
Inventor: YAMAGUCHI SHINJI
IPC: B08B3/12
Filed: 2002-07-26
Granted: 2003-09-11
Abstract: The present invention provides a method for cleaning a ceramic member for use in a system for producing semiconductors, in which the amount of metal transferred from the ceramic member to a semiconductor may be considerably reduced. The method for cleaning a ceramic member for use in a system for producing semiconductors has the step of cleaning the ceramic member with an organic acid or a weak acid.
Patent TW-I256769-B (TW)
Title: Noise filter
Inventor: TERAKAWA TAKASHIGE
IPC: H03H7/06
Filed: 2002-08-15
Granted: 2006-06-11
Abstract: A noise filter 10 of the present invention includes an inductor 71 and a resistor 11 connected in parallel with each other. A power supply frequency current bypasses the resistor 11 but passes through the inductor 71. A high frequency noise current including a resonance frequency current, on the other hand, bypasses the inductor 71 but is dissipated at the resistor 11. Therefore, the noise filter 10 does not accumulate noise power and so does not suffer from a problem due to power releasing. The resonance frequency current caused by combination of inductance of the inductance and earth capacitance in the noise filter 10 is also dissipated at the resistor 11, thus giving rise to no problem of its own.
Patent TW-574728-B (TW)
Title: Method for forming a mask pattern and method for fabricating a semiconductor device
Inventor: SUGITA MITSURO
IPC: G03F1/68
Filed: 2002-09-20
Granted: 2004-02-01
Abstract: A method for forming, on a mask, a mask pattern used for exposure. The mask pattern includes a first pattern that blends plural types of patterns, and second pattern that is smaller in size than the first pattern. The mask pattern is arranged on the mask so that the first pattern may be resolved and the second pattern is restrained from being resolved. The method includes the steps of classifying the first pattern into one of a periodic pattern having at least three elements having two equal intervals in at least one direction among two orthogonal directions, an isolated pair pattern that does not belong to the periodic pattern and includes a pair of elements arranged in at least one direction among the two orthogonal directions, and an isolated element that does not belong to the isolated pair pattern and includes only one element without constituting any pair in any of the two orthogonal directions, arranging the second pattern for the isolated pair pattern, arranging the second pattern for the isolated element, and arranging the second pattern for the periodic pattern. <IMAGE>
Patent TW-561243-B (TW)
Title: Surface inspecting method and device of object using image processing
Inventor: SHIOMI JUNICHI
IPC: G01N21/956
Filed: 2002-09-24
Granted: 2003-11-11
Abstract: White light is irradiated onto the surface of a printed circuit board from an oblique direction to capture a color information image MG0. Infrared light is also irradiated from a substantially perpendicular direction to capture an infrared light image IRM. Region segmentation is performed based on the color information image MG0 produces an image MG3 representing an integrated color region which includes a gold region GL and a brown region BR. Using this image MG3 and the infrared light image IRM, the gold region GL can be distinguished from the brown region BR. In another embodiment, a plurality of images relating to a plurality of wavelength bands of light are respectively captured for an inspection region. Then, an image characteristic value is calculated for the plurality of images, and a wavelength band R7 which is appropriate for an inspection is selected on the basis of this image characteristic value. At the time of inspection, images of each object are successively obtained in relation to light in the selected wavelength band R7, whereupon an inspection of each object is executed on the basis of these images.
Patent TW-588250-B (TW)
Title: Computer system I/O node
Inventor: ENNIS STEPHEN C
IPC: G06F13/36
Filed: 2002-10-04
Granted: 2004-05-21
Abstract: A computer system I/O node. An input/output node for a computer system includes a first receiver unit configured to receive a first command on a first communication path and a first transmitter unit coupled to transmit a first corresponding command that corresponds to the first command on a second communication path. The input/output node also includes a second receiver unit configured to receive a second command on a third communication path and a second transmitter unit coupled to transmit a second corresponding command that corresponds to the second command on a fourth communication path. Further, the input/output node includes a bridge unit coupled to receive selected commands from the first receiver and the second receiver and configured to transmit commands corresponding to the selected commands upon a peripheral bus.
Patent TW-I257658-B (TW)
Title: Semiconductor power device and method of formation
Inventor: MERCADO LEI L
IPC: H01L23/532
Filed: 2002-11-29
Granted: 2006-07-01
Abstract: In accordance with one embodiment, a stress buffer (40) is formed between a power metal structure (90) and passivation layer (30). The stress buffer (40) reduces the effects of stress imparted upon the passivation layer (30) by the power metal structure (90). In accordance with an alternative embodiment, a power metal structure (130A) is partitioned into segments (1091), whereby electrical continuity is maintained between the segments (1090) by remaining portions of a seed layer (1052) and adhesion/barrier layer (1050). The individual segments (1090) impart a lower peak stress than a comparably sized continuous power metal structure (9).
Patent TW-I305492-B (TW)
Title: Cap for a lancing device
Inventor: PIET MOERMAN
IPC: A61B17/3211
Filed: 2002-12-18
Granted: 2009-01-21
Abstract: A cap for a lancing device for lancing dermal tissue is provided. The cap includes a cap body having a proximal end for connecting to the distal end of the housing of the lancing device and a contact ring attached to the distal end of the cap body. The contact ring includes an opening for a portion of the lancet of the lancing device to pass therethrough. The contact ring has a multi-contoured surface oriented generally about an axis distinct from the axis of motion of the lancet. The multi-contoured surface is designed to pressure the dermal tissue to facilitate expression of a fluid sample after lancing the dermal tissue. The fluid sample can include blood, interstitial fluid, or both.
Patent TW-581925-B (TW)
Title: Backlight control type short-distance photograph-taking system
Inventor: ONG SOON TEONG
IPC: H04N5/235
Filed: 2002-12-23
Granted: 2004-04-01
Abstract: The invention discloses a backlight control type short-distance photograph-taking system capable of being used to combine with an electronic-information processing platform having photograph-taking function, for example a multimedia viewer. The invention can be used by a user to enhance light brightness irradiated onto the object in a short distance when taking photograph from an object (such as a name card) in a short-distance. Thus, the photographed digital image becomes brighter and clearer. The backlight control type short-distance photographing system is featured with adopting backlight control to enhance brightness of light irradiated onto the name card such that it is unnecessary to use flashlight apparatus so as to provide the short-distance photographing function of multimedia viewer with more economic benefits of cost.
Patent TW-I230441-B (TW)
Title: Method for manufacturing semiconductor device
Inventor: KIM JONG-SU
IPC: H01L21/8239
Filed: 2002-12-31
Granted: 2005-04-01
Abstract: The present invention discloses a method for manufacturing a semiconductor device. A device isolation film has a shape of an insulating spacer at an interface of active regions composed of an epitaxial silicon layer in a device isolation region of a semiconductor substrate and active regions composed of a semiconductor substrate, thereby minimizing a size of the device isolation region, maximizing a size of the active regions, and achieving a high integration of the device.
Patent TW-571069-B (TW)
Title: Method for manufacturing compound heat sink
Inventor: LI TZUNG-LUNG
IPC: F28F3/00
Filed: 2003-01-10
Granted: 2004-01-11
Abstract: Disclosed is a method for manufacturing a compound heat sink, including the steps of: forming a heat sink fin base having at least one hollow tubular body and a plurality of fins extending from a peripheral faced of the tubular body by aluminum extrusion; preparing a shaft that may be inserted through the tubular bodying; subjecting the shaft to high temperature heat treatment to anneal the shaft and then cooling at a room temperature to release stress in the shaft; inserting the shaft into the tubular body under room temperature and applying a large pressure to deform the shaft so as to completely fill the tubular body, thereby completing the process for making the compound heat sink. The method according to this invention simplifies the manufacturing process, effectively reduces the manufacturing cost, while obtaining a heat sink with the optimum heat dissipating effects.
Patent TW-594337-B (TW)
Title: Method of forming a liquid crystal display panel
Inventor: CHANG LU-KUEN
IPC: G02F1/1362
Filed: 2003-02-14
Granted: 2004-06-21
Abstract: A plurality of scan lines and gate electrodes are formed on a pixel array area of a substrate, and a plurality of bottom pad electrodes are formed on a gate and a source pad area of the substrate. An insulating layer and a plurality of active layers are formed on the substrate. A plurality of signal lines, source/drain electrodes are formed on the pixel array area, and a plurality of top pad electrodes are formed on the gate and the source pad area. A circuit testing process is performed. A passivation layer having via holes is formed on the pixel array area, and a plurality of contact holes are formed in the gate and the source pad area. A patterned transparent conductive layer filling the via holes and the contact holes is formed on the substrate.
Patent TW-584952-B (TW)
Title: Power supply clamp circuit
Inventor: CHUANG CHIEN-HUI
IPC: H01L23/60
Filed: 2003-02-21
Granted: 2004-04-21
Abstract: A power supply clamp circuit for preventing damage on an integrated circuit due to electrostatic discharge on a first voltage source of the integrated circuit. The power supply clamp circuit contains a voltage generator electrically connected to a first node for generating a voltage; a first PMOS transistor having a source electrically connected to the first voltage source, a gate electrically connected to the first node, and a drain electrically connected to a second node; a first NMOS transistor having a drain electrically connected to the second node, a gate electrically connected to the first node, and a source connected to ground; a second NMOS transistor having a drain electrically connected to the first voltage source, a gate electrically connected to the second node, and a source connected to ground; and a second PMOS transistor having a source electrically connected to the second node, a gate and a drain commonly electrically connected to the first node.
Patent TW-I227409-B (TW)
Title: Storage device capable of enhancing transmission speed
Inventor: CHEN CHIA-LI
IPC: G06F3/06
Filed: 2003-06-05
Granted: 2005-02-01
Abstract: A storage device capable of enhancing transmission speed is primarily composed of a controller and at least a solid state storage medium, in which there is at least a system interface in connection with external system end in a controller, a microprocessor for processing system's command and a memory interface for communicating with those solid state storage media. Between the system interface and the memory interface is installed a data compression module used to compress the original data transmitted to the system interface into the corresponding micro-data. The data compression module installs the multi-layer front-end data buffer and back-end data buffer between the system interface and memory interface for planning for proper division regarding buffers for proceeding original data transmission of system interface and the compressed data transmission of the memory interface, facilitating the data transmission of the system interface synchronously, the compression of data temporarily stored in the original data buffer and the data transmission after compressing the memory interface. As such, the data transmission rate of the storage device is highly enhanced.