baber/WOPTO huggingface dataset:
Patent TW-I227748-B (TW)
Title: Condensation coating process
Inventor: STRAUCH GERD
IPC: C23C16/46
Filed: 2001-02-16
Granted: 2005-02-11
Abstract: A method and device for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.
Patent TW-517198-B (TW)
Title: Automatic form-making system for procurement of construction and equipment
Inventor: CHEN YI-JANG
Filed: 2001-03-02
Granted: 2003-01-11
Abstract: The invention relates to an automatic form-making system for procurement of construction and equipment, in which the system is implemented in a way of coding a program code to make it capable of being executed in a computer and to automatically generate all forms for procurement of construction and equipment. The system includes an estimate form making module used to produce estimate form in accordance with the standard items and unit prices from government organization that conducts construction and equipment procurement along with the clicked item of construction and equipment procurement by user; a chart and form making module of budgetary book used to produce chart and form of budgetary book in accordance with the regulations of design planning standard of government organization along with the clicked the proportion, amount, item and pictures by user bundled in construction and equipment of each single item to be procured; a subcontracting form-making module used to produce subcontracting forms in accordance with regulations of government organization along with the clicked proportion, amount, schedule and qualification by system's user bundled in each item of procurement and apparatus; a construction form-making module used to produce construction forms in accordance with regulations of government organization along with the clicked proportion, amount, schedule, budget chart and subcontracting form by system's user bundled in each item of procurement and apparatus; a construction completion form-making module used to produce construction completion forms in accordance with regulations of government organization along with the clicked proportion, amount, schedule, budget chart, subcontracting form and construction form by system's user bundled in each item of procurement and apparatus.
Patent TW-490853-B (TW)
Title: Improved low voltage power mosfet device and process for its manufacture
Inventor: THAPAR NARESH
IPC: H01L29/06
Filed: 2001-04-03
Granted: 2002-06-11
Abstract: A trench type power MOSFET has a thin vertical gate oxide along its side walls and a thickened oxide with a rounded bottom at the bottom of the trench to provide a low RDSON and increased VDSMAX and VGSMAX and a reduced Miller capacitance. The walls of the trench are first lined with nitride to permit the growth of the thick bottom oxide to, for example 1000 Å to 1400 Å and the nitride is subsequently removed and a thin oxide, for example 320 Å is regrown on the side walls. In another embodiment, the trench bottom in amorphized and the trench walls are left as single crystal silicon so that oxide can be grown much faster and thicker on the trench bottom than on the trench walls during an oxide growth step. A reduced channel length of about 0.7 microns is used. The source diffusion is made deeper than the implant damage depth so that the full 0.7 micron channel is along undamaged silicon. A very lightly doped diffusion of 1000 angst; to 2000 Å in depth could also be formed around the bottom of the trench and is depleted at all times by the inherent junction voltage to further reduce Miller capacitance and switching loss.
Patent TW-I223427-B (TW)
Title: Interconnections to copper ICS
Inventor: MOYER RALPH SALVATORE
IPC: H01L23/52
Filed: 2001-04-09
Granted: 2004-11-01
Abstract: The specification describes a process for forming a barrier layer on copper metallization in semiconductor integrated circuits. The barrier layer is effective for both wire bond and solder bump interconnections. The barrier layer is Ti/Ni formed on the copper. Aluminum bond pads are formed on the barrier layer for wire bond interconnections and copper bond pads are formed on the barrier layer for solder bump interconnections.
Patent TW-526543-B (TW)
Title: Heater sealed with carbon wire heating element
Inventor: SEKO SUNAO
IPC: H05B3/44
Filed: 2001-05-24
Granted: 2003-04-01
Abstract: The heater sealed with a carbon wire heating element of the present invention has a carbon wire heating element sealed within a quartz glass member, said carbon wire being prepared by knitting carbon single fibers into a knitted cord or a braid, each wire having a crystal structure with a interlayer spacing d (002) thereof being 0.343 or less and a crystallite size Lc (002) thereof being 4.0 nm or more.
Patent TW-I273505-B (TW)
Title: Program-playing control system of retail store and method thereof
Inventor: SHR CHI-LUEN
IPC: G06Q50/00
Filed: 2001-06-29
Granted: 2007-02-11
Abstract: The headquarter computer system of the present invention can aim at different retail stores to create or modify a scheduling control file respectively, and the scheduling control file includes a plurality of defined programs with playing sequence and playing condition. Each retail store computer can set a playing list according to its corresponding scheduling control file. The playing list includes a program that matches with the above condition so that it can control the playing mechanism to play the program. The present invention can download the scheduling control file through the network and controls each playing content of the retail stores quickly; it can set the scheduling control file respectively to control each playing list of the retail stores, and sets playing conditions with flexibility to directly control each program playing.
Patent TW-493295-B (TW)
Title: Protector for data transmitting/receiving terminal
Inventor: OH YOUNG-JIN
IPC: G06F1/16
Filed: 2001-06-29
Granted: 2002-07-01
Abstract: The present invention relates to a protector for a wired or wireless data transmitting/receiving terminal and a wired or wireless data transmitting/receiving terminal having the same. According to the protector for the wired or wireless data transmitting/receiving terminal and the wired or wireless data transmitting/receiving terminal having the same, the protector prevents a display or a touch screen from getting damaged while maintaining the characteristics and commercial value of the terminal employing a digitizer (touch screen) as a display or input device. A data transmitting/receiving terminal according to the present invention comprises a sheet protector installed on a display or a touch screen of a terminal body. The terminal body includes a support band capable of supporting or arbitrarily attaching the sheet protector as a complementary structure to its one end at regions at least excluding a display area. The sheet protector includes a support band supported by or arbitrarily attached to the support band of the terminal body and extends from the support band so as to cover the display and the touch screen. The present invention can be applied to a protector for a display suitable for the usage and purpose of the data transmitting/receiving terminal, to the protection of a touch screen, the thinness of the data transmitting/receiving terminal and the like.
Patent TW-512495-B (TW)
Title: Nonvolatile semiconductor memory device, process of manufacturing the same and method of operating the same
Inventor: SUGITA YASUHIRO
IPC: H01L21/8247
Filed: 2001-07-03
Granted: 2002-12-01
Abstract: A nonvolatile semiconductor memory device comprises: a pair of impurity diffusion layers formed on a surface of a semiconductor substrate; two control gates formed on the semiconductor substrate through the intervention of a charge accumulating layer, the two control gates being provided between the pair of impurity diffusion layers and adjacent to each of the impurity diffusion layers; a word gate transistor including a word line formed on the semiconductor substrate through the intervention of a word gate insulating film between the control gates, wherein the two control gates and the word gate transistor are connected in series to form a unit cell.
Patent TW-505962-B (TW)
Title: Process for cutting out a block of material and formation of a thin film
Inventor: ASPAR BERNARD
IPC: H01L21/265
Filed: 2001-07-11
Granted: 2002-10-11
Abstract: A process for cutting out a block of material (10) comprising the following stages; (a) the formation in the block of a buried zone (12), embrittled by at least one stage of ion introduction, the buried zone defining at least one superficial part (14) of the block (b) the formation at the level of the embrittled zone of at least one separation initiator (30, 36) by the use of a first means of separation chosen from amongst the insertion of a tool, the injection of a fluid, a thermal treatment and/or implantation of ions of an ionic nature different from that introduced during the preceding stage, and (c) the separation at the level of the embrittled zone of the superficial part (14) of the block from a remaining part (16), called the mass part, from the separation initiator (30, 36) by the use of a second means, different from the first means of separation and chosen from among a thermal treatment and/or the application of mechanical forces acting between the superficial part and the embrittled zone. Application for the manufacture of components for micro-electronics, opto-electronics or micro-mechanics.
Patent TW-490751-B (TW)
Title: Formation method of polysilicon gate electrode using protection layer
Inventor: CHEN CHUN-LANG
IPC: H01L21/28
Filed: 2001-07-31
Granted: 2002-06-11
Abstract: This invention provides a semiconductor device manufacture method to form polysilicon gate electrode using protection layer. Firstly, a resist layer is formed on the hard mask layer and an etch process is performed to etch the hard mask layer and the polysilicon layer until reaching a predetermined depth using the resist layer as an etching mask. The predetermined depth has to be the same as the depth of the doped region to form two imitated gate electrodes. A thin protection layer is formed in a conformal manner on the imitated gate electrodes and the polysilicon layer after the removal of another resist layer. Then, an etching process is performed to etch the thin protection layer and to expose the surface of the polysilicon layer. A double gate structure is formed after the polysilicon layer is etched using the hard mask layer and the thin protection layer as the etching mask.
Patent TW-I223909-B (TW)
Title: Circular micro-strip antenna with capacitance feed-in
Inventor: LIN YUAN-JR
IPC: H01Q9/00
Filed: 2001-08-13
Granted: 2004-11-11
Abstract: The present invention relates to a circular micro-strip antenna with capacitance feed-in, which includes: a substrate, a feed-in port, a feed-in metal electrode, a radiative metal electrode, and a ground metal electrode. The substrate is a ceramic substrate with high dielectric constant. The feed-in metal electrode is formed on the first surface of the substrate, and the feed-in metal electrode is electrically connected with the feed-in port. The radiative metal electrode is formed on the first surface of the substrate, and surrounds the feed-in metal electrode. The capacitance generated in the circular area between the feed-in metal electrode and the radiative metal electrode is used to compensate the inductance effect caused by the ceramic substrate with high dielectric constant, so that the circular micro-strip antenna is provided with an excellent resistance matching, and thus the bandwidth of the circular micro-strip antenna is increased.
Patent TW-I220950-B (TW)
Title: Method for material lack checking of orderless production sheet
Inventor: CHEN SHIH-CHAN
Filed: 2001-08-14
Granted: 2004-09-11
Abstract: The present invention provides a method for material lack checking of order-less production sheet, which is to solve the problem that the present enterprises cannot forecast the material lack condition for order-less production sheet with an electronic method. When there is a requirement for test-production model without the production sheet and production order, the method can employ the enterprise resource planning server to monitor the stock system, and execute the specific steps and procedures to estimate the material requirement conditions for the test-production model. With this estimation method, it is able to reduce the hoard of the material in the production factory, reduce the risk of material procurement for the enterprise, and increase the profit rate of the enterprise.
Patent TW-570937-B (TW)
Title: Polymer, resist composition and patterning process
Inventor: HASEGAWA KOJI
IPC: C08F32/00
Filed: 2001-09-26
Granted: 2004-01-11
Abstract: A polymer bearing specific silicon-containing groups is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity and resolution at a wavelength of less than 300 nm, and high resistance to oxygen plasma etching. The resist composition lends itself to micropatterning for the fabrication of VLSIs.
Patent TW-520619-B (TW)
Title: Method and air baffle for improving air flow over ionizing pins
Inventor: GORCZYCA JOHN
IPC: H01T23/00
Filed: 2001-12-07
Granted: 2003-02-11
Abstract: A method of facilitating the transfer of ions from at least one ionizing pin disposed in an ion air blower into an air stream while the ion air blower is activated. The method includes attaching a baffle to the ion air blower; and positioning the baffle upstream from and proximate to the at least one ionizing pin to cause turbulent flow in the air stream proximate to the tip of the at least one ionizing pin. An ion air blower is also detailed herein. The air blower includes an emitter assembly disposed in a housing. A plurality of ionizing pins extend from the emitter assembly such that the air stream passes over the plurality of ionizing pins. A baffle is disposed proximate to and upstream from the ionizing pins to create turbulent flow in the air stream proximate to a tip of each of the ionizing pins.
Patent TW-I247173-B (TW)
Title: Liquid crystal display device
Inventor: FUKAYAMA NORIKYU
IPC: G02F1/1333
Filed: 2001-12-19
Granted: 2006-01-11
Abstract: In a liquid crystal display device of the present invention, a recessed portion is formed in a portion of a periphery of a lower frame, a columnar member is provided to the recessed portion, the columnar member is allowed to pass through a hole formed in a projecting portion which is provided to an optical sheet, and a side surface of a liquid crystal panel is brought into contact with the columnar member. The columnar member provided to the lower frame not only determines the position of the liquid crystal panel with respect to the lower frame but also determines the position of the optical sheet with respect to the lower frame and firmly holds the optical sheet to the lower frame thus preventing the disengagement of the optical sheet from the lower frame.
Patent TW-542953-B (TW)
Title: Fault tolerance transmission device for information processing system and the method thereof
Inventor: LEE CHUN-LIANG
IPC: G06F11/07
Filed: 2001-12-28
Granted: 2003-07-21
Abstract: The present invention is a fault tolerance transmission device for information processing system and the method thereof. The fault tolerance transmission device uses the connection system to be connected with the small computer system interface bus (SCSI bus), and in association with the fault tolerance transmission method of the server for collaborately managing the information transmission of independent systems. When there is an independent system occurring faults and not being able to transmit information, the connection system for the fault tolerance transmission device can turn over the information transmission task to the normal independent system for charging temporaily, and notify the user. Thus, when part of independent system occurred faults, the operation of the whole information processing system can be continued.
Patent TW-556119-B (TW)
Title: Exhibiting method for 3D model in transparent object, transparent object exhibiting 3D model, and the ordering system
Inventor: NAKAYAMA TAKAFUMI
IPC: G06Q30/06
Filed: 2002-03-14
Granted: 2003-10-01
Abstract: The present invention provides an exhibiting method for 3D model in transparent object, which is to irradiate a light beam inside the transparent object to exhibit the shape of the 3D model. The method includes the following steps: abstracting the density information 3a-3d for the 3D model; irradiating with laser beam in higher density on the bright portion based on the abstracted density information 3a-3d; and, irradiating with laser beam in lower density on the dark portion; thus, the method can exhibit the density on the surface of the sculpture.
Patent TW-548692-B (TW)
Title: Twist-N-Lock wafer area pressure ring and assembly
Inventor: ANTOLIK JERREL K
IPC: H01L21/687
Filed: 2002-03-26
Granted: 2003-08-21
Abstract: Wafer area pressure rings used to confine plasma in plasma processing chambers which are manufactured with bores therein such that replacement of the pressure rings during routine or repair maintenance is significantly eased. The bores allows the pressure rings to be installed by simply aligning the bores under hanging adapters which are connected to the ceiling of the chamber, lifting the rings such that a the hanging adapter enters the ring and then turning or twisting the entire apparatus a miniscule amount and then dropping the ring apparatus on the hanging apparatus, locking the rings in place.
Patent TW-517136-B (TW)
Title: Door locking handle assembly of pull-out and side-swinging lever-action type
Inventor: SEGAWA SHIROU
IPC: E05B47/00
Filed: 2002-03-29
Granted: 2003-01-11
Abstract: A door locking handle assembly of pull out and swinging lever action type for use on a door can be operated with an unlocking signal from a remote distance, to relieve the restriction of pull-out the operating handle; the operating handle can be automatically restricted again by being pushed in. A solenoid 12 is fixed on the back side of housing 2, and a boss 7 is formed on a lock lever 13 pivotally mounted on housing 2. The lock lever 13 is rotatingly urged by spring 15 in the direction of establishing an engagement with locking plate 8. By energizing solenoid 12 the lock lever 13 is pulled back to relieve the locking plate 8 from the engagement with boss 7.
Patent TW-538541-B (TW)
Title: Active matrix substrate of liquid crystal display device and the manufacturing method thereof
Inventor: LAI HAN-CHUNG
IPC: H01L21/84
Filed: 2002-05-15
Granted: 2003-06-21
Abstract: The present invention provides a manufacturing method for active matrix substrate of liquid crystal display device, which uses five masks to complete the manufacturing. The first mask is used to form the gate lines on a transparent substrate. The second mask is used to sequentially deposit a semiconductor layer, an n-type doping layer and a metal layer after coating with a gate insulative layer for defining the metal layer/n-type doping layer/semiconductor layer to form the data lines. The third mask is used to form a low-k insulative layer on the transparent substrate containing data lines, and form the contact opening exposing the surfaces of data lines. The fourth mask is to form a transparent conductive layer on the low-k insulative layer, and then patternize the pixel electrodes and the transparent conductive layer with source patterns, and using the pixel electrodes and the transparent conductive layer with source patterns as the mask to etch the metal layer and the n-type doping layer. The fifth mask is used to define the passivation layer.
Patent TW-537948-B (TW)
Title: Patterned product and its manufacturing method
Inventor: KAWANISHI YOSHITAKA
IPC: G03F1/50
Filed: 2002-07-12
Granted: 2003-06-21
Abstract: To provide a manufacturing method for simultaneously forming machined patterns different in dept in a small number of steps and a machined pattern having a U-shaped sectional form in which depths and widths are smoothly changed. Mask patterns 62 respectively having a semicircular sectional form and mask patterns 65 respectively having a V-shaped sectional form are formed at different opening widths 63 and 64 respectively to perform sandblasting by using the mask patterns 62 and 65 as masks. Though a deep groove is formed between the semicircular-sectional-form mask patterns 62, a shallow groove is formed between the V-shaped-sectional-form mask patterns 65. A patterned product in which a plurality of chambers are separated by a partition and the chambers are connected by a groove formed on the partition, wherein the groove gradually deepens from the center between chambers toward the chambers.
Patent TW-563234-B (TW)
Title: Multi-chip semiconductor package and fabrication method thereof
Inventor: TSAI SHIANN-TSONG
IPC: H01L23/28
Filed: 2002-10-11
Granted: 2003-11-21
Abstract: A multi-chip semiconductor package and a fabrication method thereof are provided. A substrate having an upper surface and a lower surface is prepared. At least a first chip is mounted on the upper surface of the substrate. A non-conductive material is applied over predetermined area on the first chip and the upper surface of the substrate. At least a second chip is mounted on the non-conductive material, and formed with at least a suspending portion free of interference in position with the first chip, wherein the non-conductive material is dimensioned in surface area at least corresponding to the second chip, so as to allow the suspending portion to be supported on the non-conductive material. With the second chip being completely supported on the non-conductive material without causing a conventional chip-crack problem, structural intactness and reliability can be effectively assured for fabricated package products.
Patent TW-562835-B (TW)
Title: Polyester composition and hot-fill bottle manufactured therefrom
Inventor: JEN ZO-CHUN
IPC: C08L67/02
Filed: 2002-11-19
Granted: 2003-11-21
Abstract: Hot-fill polyester bottles characterized by an absence of visually discernable haze, a reduction of aging time for preform and promotion in the crystallization rate are manufactured from a polyester containing the main unit-ethylene terephthalate. Such polyester also contains up to about 250 ppm, preferably from 40 ppm to 50 ppm, of barium sulfate (BaSO4) having an average particle size of less than about 0.1 micron and preferably from 5 ppm to 50 ppm of black iron (Fe3O4) having an average particle size of about 0.1 micron to 1 micron, to promote the crystallization rate when it is heat-set. The IV (intrinsic viscosity) of the polymer after melting polymerization and solid phase polymerization is from 0.7 to 1.1, preferably from 0.70 to 0.85. The polymer may be first formed into a preform, which may have an average wall thickness from 4 mm to about 6 mm, that is subsequently blown into the desired PET bottle shape.