Patent SG-11201806413W-A (SG)
Title: Cell-based reference voltage generation
Inventor: DERNER SCOTT
IPC: G11C11/22
Filed: 2017-01-25
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 10 August 2017 (10.08.2017) WIPO I PCT (10) International Publication Number WO 2017/136203 Al 111111111111110111011111111111010111110111011101111111101011111011111111111110111111 (51) International Patent Classification: G1 1C 11/22 (2006.01) (21) International Application Number: PCT/US2017/014922 (22) International Filing Date: 25 January 2017 (25.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/012,566 1 February 2016 (01.02.2016) US (71) Applicant: MICRON TECHNOLOGY, INC. [US/US]; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). (72) Inventors: DERNER, Scott, James; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). KAWAMURA, Chris- topher, John; 8000 S. Federal Way, Boise, Idaho 83716- 9632 (US). (74) Agent: KRAFT, Aaron, J.; Holland & Hart LLP, P.O. Box 11583, Salt Lake City, Utah 84147 (US). - (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(ii)) as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: with international search report (Art. 21(3)) - (54) Title: CELL-BASED REFERENCE VOLTAGE GENERATION VREF 435 RDO RD1 110-a WL 4 W O 20 17 / 136 203 Al u._ ,-,,. r — 620 — — ‘...7. 41U _ i -- — C615 C f — - 1 -b \,. DL 17 - 220 - a --- 215 - .../ 1 I 610-a 610-b r 115-b Write Circuit 4 220-b 605-a 605-b ( -. 1 215- DE J 115-c FIG. 6 600 (57) : Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A first ferroelectric memory cell may be initialized to a first state and a second ferroelectric memory cell may be initialized to a different state. Each state may have a corresponding digit line voltage. The digit lines of the first and second ferroelectric memory cells may be connected so that charge-sharing occurs between the two digit lines. The voltage resulting from the charge-sharing between the two digit lines may be used by other components as a reference voltage. a-205-a PL 1\" j-205-b PL 0\"