baber/WOPTO huggingface dataset:
Patent TW-408540-B (TW)
Title: Signaling protocol for satellite direct radio broadcast system
Inventor: CAMPANELLA S JOSEPH
IPC: H04B7/185
Filed: 1998-11-11
Granted: 2000-10-11
Abstract: A satellite direct radio broadcast system is provided which assembles bits of broadcast programs into prime rate increments, several of which are assembled into a frame. Frames are divided into symbols which are demultiplexed into alternating ones of a plurality of prime rate channels. The prime rate channels are demultiplexed onto a corresponding number of broadcast frequencies for transmission to a satellite. The satellite payload switches the symbols into time division multiplexed (TDM) data streams. The receivers process the TDM streams using service control headers (SCHs) provided therein by broadcast stations. The SCHs facilitate transmission of different service components within broadcast channel frames, association of a primary broadcast channel with one or more secondary broadcast channels on a frame-to-frame basis, and the transmission of multiframe bit streams, or auxiliary data throughout a broadcast channel that are independent of a service, in contiguous or non-contiguous frames.
Patent TW-432614-B (TW)
Title: Manufacturing method for self-aligned contact
Inventor: GAU JING-HUNG
IPC: H01L21/60
Filed: 1998-12-23
Granted: 2001-05-01
Abstract: A manufacturing method for self-aligned contact which is to form at least two adjacent gates on the substrate with passivation thereon; depositing conformal buffer layer to cover the gate, the passivation and the substrate surface; and, covering a layer of photoresist thereon that the depth of photoresist is between the gate depth and the passivation depth; removing the buffer layer to about the level of photoresist surface; removing the photoresist to form the spacer on the sidewall of the buffer layer and the passivation; forming the insulation layer covering the top of the substrate; then, forming the contact in the insulation layer to expose part of the substrate between the adjacent spacers.
Patent TW-392209-B (TW)
Title: Method for fabricating cell projection mask background of the invention
Inventor: KIM YOUNG-SIK
IPC: H01L21/027
Filed: 1998-12-28
Granted: 2000-06-01
Abstract: A method for fabricating cell projection mask, used in the process for making a fine pattern by lithography techniques. The method for fabricating cell projection mask comprises the steps of : forming a membrane on a supporting substrate; forming a metal layer having a high electron penetration preventability on the membrane; forming a first photosensitive layer pattern on the metal layer to expose some portions of the metal layer; forming an absorbery by patterning the metal layer using the first photosensitive layer pattern as an etching mask; removing the first photosensitive layer pattern; forming a second photosensitive layer pattern exposing a portion a backside of the supporting substrate on the backside of the supporting substrate; etching the exposed portion of a backside of the supporting substrate until the membrane is exposed by means of the second photosensitive layer pattern as an etching mask, thereby forming a frame; and removing the second photosensitive layer pattern.
Patent TW-411538-B (TW)
Title: Semiconductor device, method of fabricating the same, and electronic apparatus
Inventor: HASHIMOTO NOBUAKI
IPC: H01L23/495
Filed: 1998-12-30
Granted: 2000-11-11
Abstract: A method of fabricating semiconductor devices comprises: a process of mounting a plurality of semiconductor chips (16) on a film carrier tape (30); a process of sealing each one of said semiconductor chips (16) mounted on said film carrier tape (30) with resin (26); a process of attaching an individual reinforcing member (28) to said film carrier tape (30) at a position corresponding to each one of said semiconductor chips (16); a process of forming a plurality of protrusions (14) on said film carrier tape (30) at a position corresponding to each one of said semiconductor chips (16); and a process of punching out said film carrier tape (30) into separate insulating films (12) after above-described processes; wherein each of said processes is carried out on said film carrier tape running between supply and take-ups reels.
Patent TW-476853-B (TW)
Title: Liquid crystal display device
Inventor: MORIMOTO HIROKAZU
IPC: G02F1/1339
Filed: 1999-04-19
Granted: 2002-02-21
Abstract: A liquid crystal material is held between a circuit array and counter substrates. A plurality of spacers are disposed to keep a gap between the circuit array and counter substrates substantially constant. Change in distance of the gap equivalent to constriction of the liquid crystal material due to change in temperature from 20 DEG C to -20 DEG C is less than change in height of the spacers on conditions that the pressure of 100 mN/mm2 is applied between the substrates and that the liquid crystal material is not held between the substrates.
Patent TW-502217-B (TW)
Title: Method for improving CCD image quality
Inventor: YAN JIA-SUNG
IPC: G06K11/00
Filed: 1999-04-26
Granted: 2002-09-11
Abstract: There is provided a method for improving CCD image quality, which uses the CCD photo-leakage function to amend the image data. The steps of obtaining the CCD photo-leakage function include providing a test document having a plurality of different gray levels; scanning a test document with a fully black background and defining the same as a first image data; scanning a test document with a fully white background and defining the same as a second image data; determining the ideal gray level and actual gray level of the test document in the first image data and the second image data; determining the average gray level of the second image data including the background; and determining the photo-leakage function based on the gray level of each area and the corresponding average gray level. The step of amending the image data is to determine the average gray level of image data for each row and amend the gray level of each row based on the photo-leakage function.
Patent TW-437260-B (TW)
Title: Sheet heating device
Inventor: MIYAJI HIDEAKI
IPC: H05B3/40
Filed: 1999-06-01
Granted: 2001-05-28
Abstract: In the conventional sheet heating device, it is difficult to dismount a heater for installing the tubes. In the sheet heating device of the present invention, a heater is buried in any portion of the trench of the heat separating material sheet having an inner face formed with trenches, and is wound on the periphery of the bent tube. An arrangement pattern of the heater is determined so that the concentration of the heater located at an inner peripheral side of the tube is made rough in comparison with that at an outer peripheral side. In addition, the heater is wound on the periphery of the aforementioned tube via a heat conducting plate.
Patent TW-468079-B (TW)
Title: Liquid crystal display device with a condenser unit
Inventor: RAI YASUKI
IPC: G02F1/1335
Filed: 1999-06-05
Granted: 2001-12-11
Abstract: A photodetector 1 directly receives the external light, a light source 114 is put on and off according to its output and opens and closes a cover 121. Since the light source 114 may be turn off at adequate timing, the electric power consumption may be reduced. A photodetector 2 is installed inside a casing 120 of the LCD with back to the light and receives the external light collected from a light condensing part 115 and the internal light emitted by the light source 114. The LCD panel 100 improves the visibility by automatically fluctuating the luminance and contrast ratio according to the output of the photodetector 2.
Patent TW-473555-B (TW)
Title: High density plasma CVD process for making dielectric anti-reflective coating
Inventor: LEE GILL-YOUNG
IPC: H01L21/027
Filed: 1999-06-11
Granted: 2002-01-21
Abstract: An improved process for preparing nitrogen containing substrates selected from the group consisting of silicon oxynitride, silicon nitride and titanium nitride films and silicon dioxide cap films characterized by prevent resist contamination when used as dielectric anti-reflective coatings, using a high density plasma CVD system, comprising: providing a processing chamber holding a wafer in a vacuum sufficient to enable O2 to be used as an oxygen source without risk of explosion in a plasma generating region of the processing chamber; introducing a gaseous mixture selected from the group consisting of SiH4/O2/N2 or SiH4/O2/N2/Ar into the processing chamber; and subjecting the processing chamber to a RF electrical signal of sufficient frequency to create a high density plasma in the plasma generating region of said processing chamber, whereby said wafer is processed by resulting high density plasma generated by said RF electrical signal.
Patent TW-428379-B (TW)
Title: Variable clock rate correlation circuit and method of operation
Inventor: KANG INCHUL
IPC: H04B1/707
Filed: 1999-07-07
Granted: 2001-04-01
Abstract: A variable rate correlation circuit for conserving power includes a variable clock source, a local PN source, and a correlator. The local PN source further includes a local generator and a resampler. The variable clock source provides a normal clock rate and a lower clock rate. The local generator supplies the local PN sequence at the normal clock rate. The resampler receives the local PN sequence sampled at the normal clock rate and outputs the local PN sequence sampled at the lower clock rate. The correlator receives the lower sampled local PN sequence, the received PN sequence, and the lower clock rate signal, correlating the received and local PN sequences at the lower clock rate to produce a correlated result.
Patent TW-426895-B (TW)
Title: Method for producing gate oxide layer
Inventor: HUANG GUO-TAI
IPC: H01L21/28
Filed: 1999-07-16
Granted: 2001-03-21
Abstract: A method for producing a gate oxide layer comprises providing a substrate; forming a nitride region on the surface of the substrate; using an organic compound of tantalum metal and an organic compound of titanium metal as precursors to perform a chemical vapor phase deposition of organic metal compounds in order to form a dielectric layer of tantalum titanium oxide on the substrate; sequentially forming a barrier layer, a conductive layer and an anti-reflective layer on the dielectric layer of tantalum titanium oxide; defining the anti-reflective layer, the conductive layer, the barrier layer, and the dielectric layer of tantalum titanium oxide to form a gate structure on the substrate of the nitride region, in which the organic compound of tantalum metal includes alkoxylated tantalum compounds, and the organic compound of titanium metal includes alkoxylated titanium compounds or amino titanium compounds.
Patent TW-432749-B (TW)
Title: Stamped backshell assembly with integral front shield and rear cable clamp
Inventor: KARIR ARVIND
IPC: H01R13/6592
Filed: 1999-07-27
Granted: 2001-05-01
Abstract: A shielding arrangement for an connector includes a housing made up of a base and front shield stamped and formed from a single blank to provide shielding continuity between the front shield and a cable gripping section of the base. A cover is arranged to be secured to the base using only two screws, the cover being secured to the base by interengaging tabs at the front of the cover, the two screws, and an injection molded plastic insulator that fits over the assembled base and cover and that includes retention for jackscrews using interference holes on two sides of the insulator and provision for securing a separate strain relief.
Patent TW-418298-B (TW)
Title: Liquefied gas storage tank
Inventor: GULATI KAILASH CHANDER
IPC: F17C3/02
Filed: 1999-10-11
Granted: 2001-01-11
Abstract: A large, box-like, polygonal tank for storing liquefied gas on land or on ground based structures and a method of constructing the tank. The tank is comprising of an internal, truss-braced, rigid frame, having a cover on the frame for containing the stored liquid within the tank. The internal, truss-braced frame allows the interior of the tank to be contiguous throughout while compensating for the dynamic loads caused by the ""sloshing"" of stored liquid which, in turn, is due to the short excitation periods cause by seismic activity or the like.
Patent TW-445229-B (TW)
Title: Method and apparatus for molding the hull of a vessel
Inventor: LAZZARA RICHARD C
IPC: B63B5/24
Filed: 2000-01-28
Granted: 2001-07-11
Abstract: A method and apparatus for molding the hulls of vessels comprises a plurality of individual starboard base panels, starboard side panels, port base panels and port side panels. Interconnected in a number of respective first panel groups and second panel groups, which groups are then connected side-by-side along the length of the vessel hull to be formed. The first panel groups are longitudinally spaced from one another and carried by adjustable vertical supports, whereas the second panel groups are removably mounted in between adjacent first panel groups to form a continuous negative mold surface against which the vessel hull can be constructed. After the hull has been formed, the second panel groups are removed while the first panel groups remain in place, a number of trolley devices are positioned beneath the hull in the spaces vacated by the second panel groups, and then the vertical supports are operated to lower the hull onto the trolley devices at which time the first panel groups can be disassembled thus allowing the hull to be transported on the trolley devices.
Patent TW-402687-B (TW)
Title: Frequency-dependent amplitude attenuation characteristics technique
Inventor: WENG LI-SHENG
IPC: G01N29/00
Filed: 1999-11-05
Granted: 2000-08-21
Abstract: This invention relates to a method for detecting damages in material using a frequency-dependent amplitude attenuation , which utilizes the wide-banded ultrasonic transducer to proceed nondestructive evaluation & testing and to normalize the amplitude to overcome the uncertainty of contact type transducers toward the amplitude due to the contact situation, and could eliminate the influence of amplitude (energy) input/output due to various system settings, to provide the ultrasonic non-destructive damage-detecting method with high sensitivity, efficiency, reliability and reproducibility.
Patent TW-434720-B (TW)
Title: Method of removing hard-mask laywr from surface of trench-patterned semiconductor structure
Inventor: YUAN TIAN-MIN
IPC: H01L21/302
Filed: 1999-12-02
Granted: 2001-05-16
Abstract: A method of removing hard-mask layer from surface of trench-patterned semiconductor structure, comprising: (a) providing a semiconductor substrate on which a buffer layer is formed and a temporary masking layer is formed atop the buffer layer; (b) selectively forming a hard masking layer defining trench patterns on a top surface of the temporary masking layer; (c) using the hard masking layer formed in step (b) to form a trench pattern in the semiconductor substrate that extends from the top surface of the temporary masking layer down to the semiconductor substrate; (d) forming a protecting material that selectively covers the trench pattern at or higher than the surface of the buffer layer; and (e) applying a removing agent non-selectively onto the structure resulting from step (d), so that the removing agent removing the hard masking layer from the top surface of the patterned temporary masking layer, yet is prevented from attacking the buffer material exposed to the sidewalls of said trench pattern because of the presence of the protecting material therein.
Patent TW-448450-B (TW)
Title: Jet pump wedge locking support apparatus and method of repairing a jet pump inlet mixer gravity wedge in a boiling water nuclear reactor
Inventor: ERBES JOHN GEDDES
IPC: G21C19/02
Filed: 1999-12-08
Granted: 2001-08-01
Abstract: A wedge locking support apparatus that applies a downward preload force to a jet pump inlet mixer gravity wedge and is remotely installable without disassembly of the jet pumps is described. The downward force supplied by the wedge locking support apparatus supplements the force supplied by the weight of the gravity wedge and improves the lateral support provided to the inlet mixer by the gravity wedge. The wedge locking support apparatus includes an upper leaf spring assembly configured to engage the gravity wedge bracket, a lower leaf spring assembly slidably coupled to the upper leaf spring assembly and configured to engage the top of the wedge, and a jack bolt coupled to the upper and lower assemblies.
Patent TW-510987-B (TW)
Title: Self-diagnosis voice system of server system
Inventor: CHEN SHU-JIUAN
IPC: G06F17/00
Filed: 1999-12-10
Granted: 2002-11-21
Abstract: The present invention is a self-diagnosis voice system of server system. When a computer servo system is switched on, the central processing unit (CPU) of the system will read the basic input-output system (BIOS) stored in a read-only memory (ROM) to carry out the system power-on self-test (POST) procedure. When a system error is found, by means of the error code detected by the test procedure of the BIOS and the process of a voice control circuit, the CPU will search the corresponding error code and the voice message check table from a flash ROM before, by means of the process of the same voice control circuit, making a speaker speak the voice message of the error. Therefore, by means of the error code and the voice message check table, the voice control circuit can promptly find the corresponding error voice message to complete self-diagnosis voice trouble shooting of the computer server. Hence, the time of the testing persons and the service persons can significantly be saved and the product's extra-added value and competitiveness can be promoted.
Patent TW-448471-B (TW)
Title: Inspecting method for cathode ray tube
Inventor: KITADE HARUHIKO
IPC: H01J9/42
Filed: 2000-02-03
Granted: 2001-08-01
Abstract: The present invention relates to the inspecting method for the manufacturing process of cathode ray tube, wherein an image signal processing device is used to inspect the sealing part of the cathode ray tube. The processing device of this image signal includes: a light source to irradiate the light onto the exhaust tube, which is allocated on the line across the axis of the exhaust tube; a photographing device allocated on the line facing the light source and with the exhaust tube therein to take the picture of the sealing part; and a processing device to process the image signal generated by the photographing device. At first, the picture of the exhaust tube sealing part is taken to generate its image signal. Then, the size of the gap at the exhaust tube sealing part is measured by processing this image signal. In addition, compare the size of the gap is compared with the reference value to determine whether its condition is good or not. That is, the size of the gap is quantitatively measured so as to determine whether its condition is good or not from its value. This inspection method reduces the deviation in measurement and judgment compared with the well-known eye-inspection method; significantly enhances the accuracy of inspection; and further increases the reliability of the cathode ray tube. At the same time, the productivity is increased. The image processing also includes the process to distinguish the pattern corresponding to the base pin of the cathode ray tube and the pattern corresponding to the gap. Under this situation, even if the image signal contains the pattern corresponding to the base pin of the cathode ray tube, this image signal can still be prevented from being misjudged to be a gap; i.e., it has the advantage of preventing misjudgment.
Patent TW-500835-B (TW)
Title: Electro-chemical deposition system
Inventor: CHEUNG ROBIN
IPC: H01L21/00
Filed: 2000-02-22
Granted: 2002-09-01
Abstract: The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electrochemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.
Patent TW-457831-B (TW)
Title: Terminal isolating method and isolating structure for EL plate having piercing type terminal
Inventor: WANG SHAU-JUNG
IPC: H05B33/00
Filed: 2000-05-29
Granted: 2001-10-01
Abstract: A terminal isolating method and isolating structure for EL plate having piercing type terminal are disclosed, wherein the EL sheet comprises a transparent electrode layer, a rear electrode layer, an electroluminescence layer sandwiched between the transparent electrode layer and the rear electrode layer, a first terminal piercing the EL sheet to electrically connect to the rear electrode layer, and a second terminal piercing the EL sheet to electrically connect to the rear electrode layer. After proceeding the coating procedure of the luminescence layer and the back electrode layer, proceed an electrical separation and cutting procedure to the transparent electrode layer, and separate the transparent electrode layer into a first region comprising at least one region that will be electrically contacted in the first terminal piercing, and the second region that will be electrically contacted in the second terminal piercing, and the first region and the second region are mutually insulated.
Patent TW-522493-B (TW)
Title: A method and apparatus for improving side wall passivation for organic etch
Inventor: NI TUQIANG
IPC: H01L21/311
Filed: 2000-09-21
Granted: 2003-03-01
Abstract: A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a passivation gas. The passivation gas is preferably either a silicon containing gas or a boron containing gas, or both. The ratio of the oxidizing gas to the passivation gas is preferably at least 10:1. In addition, an inert carrier gas may be provided. The plasma is then used to etch the organic insulating layer through the mask layer, thereby forming a via having essentially vertical sidewalls in the organic low-k insulating layer.