Patent SG-11201806724Y-A (SG)
Title: Organometallic compound and method
Inventor: ODEDRA RAJESH
IPC: C23C16/44
Filed: 2017-02-10
Abstract: A)x-M-(R3)4-x (I) 10 11 12 PRV 13 14 15 16 17 18 19 20 L. Figure 1 . Sketch of ALD system for thin film deposition. W O 20 17 / 1369 45 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/136945 Al 17 August 2017 (17.08.2017) WIPO I PCT (51) International Patent Classification: C07F 7/04 (2006.01) C23C 16/44 (2006.01) C23C 16/40 (2006.01) (21) International Application Number: PCT/CA2017/050158 (22) International Filing Date: 10 February 2017 (10.02.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 2920646 12 February 2016 (12.02.2016) CA (71) Applicant: SEASTAR CHEMICALS INC. [CA/CA]; 10005 McDonald Park Road, Sidney, British Columbia V8L 5Y2 (CA). (72) Inventors: ODEDRA, Rajesh; 10005 McDonald Park Road, Sidney, British Columbia V8L 5Y2 (CA). DONG, Cunhai; 3972 Oakwinds Street, Victoria, British Columbia V8N 3B3 (CA). CEMBELLA, Shaun; 12 - 1260 Pem- broke Street, Victoria, British Columbia V8T 1J9 (CA). (74) Agents: THOMPSON, Douglas B. et al.; Thompson Cooper LLP, Suite 201, 1007 Fort Street, Victoria, British Columbia V8V 3K5 (CA). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) (54) Title: ORGANOMETALLIC COMPOUND AND METHOD 11111111111111011101111111111101011111011101110111111111110111111111111111111110111111 (57) : A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(0R3)4-x wherein: A is selected from the group consisting of -NR1R2, -N(R4) (CH2)nN(R5R6), -N=C(NR4R5)(NR6R7), OCOR1, halo and Y; Rl and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of Rl and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered het- erocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consist- ing of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer de- position (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Meth- ods of low temperature vapour phase deposition of metal oxide films, such as Si02 films, are also provided.