Patent SG-11201407257T-A (SG)
Title: Polishing pad and method for manufacturing same
Inventor: AHN BONG-SU
IPC: B24D11/00
Filed: 2013-02-12
Abstract: (43) ^1^711 \"Q 2013 Vil 11 -?! 28 (28.11.2013) Wl PO I P CT (10) WO 2013/176378 A1 (51) ^1^^: B24D 11/00 (2006.01) B24D 3/16 (2006.01) (21) PCT/KR2013/001085 (22) 2013 ^2 € 12 H (12.02.2013) (25) #€SH: (26) iMISH: (30) 10-2012-0054523 2012 ^ 5 € 23 (23.05.2012) H KR (71) #€\"?!: (KPX CHEMIC­ AL CO., LTD.) [KR/KR]; 121-805 *i-ir*l ^ ^ 473 KPX \'1 Sj 15 % , Seoul (KR). (SAMSUNG ELECTRONICS CO., LTD.) [KR/KR]; 443-742 ^7]£ =r€ l A #^3. 129, Gyeong- gi-do (KR). (72) SHf- ^ 4 (AHN, Bong-Su); 143-190 ^1^1 T 1 5] ^ 2 A 803 S., Seoul (KR). ^ir (JANG, Young-Jun); 443-706 7] £ -?-[ '-] \"fj n J-I¥ 3*1 1 109-207, Gyeonggi-do (KR). (JEONG, Jin-Su); 121-040 7-1^1 £S)-¥ 1 104-406, Seoul (KR). (LEE, Sang-Mok); 121-775 43 ^1 108-1802, Seoul (KR). ^71^ (SONG, Kee-Cheon); 680-042 VYr °>-§- 2 789-6 302-1101, Ulsan (KR). (KIM, Seung-Geun); 680-842 o]:-g- 2 ^ 789-6 102-1305, Ulsan (KR). (SEO, Jang-Won); 612-712 §11^ T 1 l^lf 1200 3 4a 1 102-2602, Busan (KR). -S (CHOO, Jeong-Seon); 607-122 Jf^l -4 3 2 ^ ^ 5f 7}^ 102 J:, Busan (KR). (KANG, Hak-Su); 641-809 #€ A 1 £ Til -o\" 327-6, Gyeongsangnam-do (KR). (KONG, Gyoung-Pyo); 681-764 1-302, Ulsan (KR). (74) tfle)\"?]: (KIM, Ham-Kon); 135-080 ^ vH 7J-U- ^ ^ ^ 668-2 2 f% Seoul (KR). (81) *13^ (l^ iA] 7} &ir ?V,7}^-?!: 5L& ^S\ ^-14] e] S\ iL J:# ^ t} ): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, [CFS ^ *l*f] (54) Title: POLISHING PAD AND METHOD FOR MANUFACTURING SAME (54) ^31 ^ : °4n|-iiHH Sj Z L DISS'S [Fig 1] 100 141' 142' 160 142 00 l> m i> i-H cn i-H o CJ o & (57) Abstract: According to the present invention, the method for manufacturing polishing a pad by mixing polishing a layer form­ ing material and solidifying the material through a chemical reaction includes: step of forming a micro organic particles by pulveriz - ing an organic material using a physical method; step of a mixing the micro organic particles formed in the above step with the pol - ishing layer forming material; a step of forming gaseous pores by mixing the mixture obtained in the above step with pore a size- controllable inert gas, a capsule-type foaming agent, or a chemical foaming agent; a step of producing a polishing layer by gelating and curing the mixture obtained in the above step; and step a of distributing the pores through the opening of the gaseous pores on a surface by processing the polishing layer. (57) [cFS ^ *l*f] WO 2013/176378 Al I lllll llllllll II llllll III lllll lllll III III III lllll llll llll lllll lllll lllll lllll lllllll llll llll SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) *1^ Of iAl7} $.4 4, 7}44 JSL-s- W3 « 4 e] iL J:# 4 43 ): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), -rr 4 4 3 (AM, AZ, BY, KG, KZ, RU, TJ, TM), -i rv! (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). — 4 44 (2:51= ^ 2 \ 3i(3)) SL 4^ 44=t S J4 #11-1: ^433^- 443 443 34 JZ.4433 44 ^Ht 4^44 4^4,43# •ir #33 4443 44 43 343. «J4334 444; 43 4434 S J43 44 43 43 3 4# 4 4=t S J4 #43 ^4334 444; 43 443 ^4#3 S3 43^ 4H*3 7}44 44-4 34,4^sj 4S 4, 443 US31 =f 33£ 3— 44# ^443, 714 S3# S J444 444; 471 44# ^4 ^43 ^4#-§r 44 4 3433 34=f-i: 4^44 444; 471 34=t-S: 7}443 X43 714 S33 71143 34 7141-S: 4S 334 44# S444 44 4444.