baber/WOPTO huggingface dataset:
Patent TW-411709-B (TW)
Title: System for selecting, accessing and viewing portions of an information stream(s) using a television companion device
Inventor: CHEN JEANE
IPC: G10L15/00
Filed: 1999-02-11
Granted: 2000-11-11
Abstract: A television companion device (TCD) is a device comprising a communication transceiver capable of receiving a signal from a television set, the signal having one or more types of information split from a broadcast signal received by the television set and an output that presents one or more segments of one or more of the types of information. This device enables the personal viewing of information selected specifically for the individual. This information can be different than and/or unrelated to that displayed on the television. The information displayed on each individual TCD may be video clips or video programs, audio clips or audio programs, data, graphical images, still images, and/or animations. The device amy also comprise an input that sends one or more messages through the communication transceiver to the television, thereby allowing the viewer to send requests for information to the television or send messages to other television companion devices.
Patent TW-504748-B (TW)
Title: Exposure method, exposure apparatus, method of producing the same, and method of fabricating the device
Inventor: HORIKOSHI TAKASHIHIRO
IPC: G03F7/20
Filed: 1999-04-07
Granted: 2002-10-01
Abstract: A main controller (50) determines the exposure control desired value according to the transmittance of an optical system (28A, 28B, 32, PL) measured by means of a sensor (59) before the exposure or estimated by predetermined calculation and controls the exposure according to the determined exposure control desired value while a reticle pattern is being transferred onto a wafer (W) through the optical system. Since the exposure energy given to the image surface in a unit time over unit area changes with the transmittance of the optical system, the exposure control desired value is determined according to the transmittance of the optical system, and the exposure is controlled according to the determined control desired value. Therefore, high-precision exposure is achieved without being influenced by the variation of the transmittance.
Patent TW-403806-B (TW)
Title: Actuator assembly
Inventor: SCHLACK RICHARD E
IPC: E05C17/10
Filed: 1999-06-01
Granted: 2000-09-01
Abstract: An actuator is used for operating a variety of latching mechanisms. In one embodiment, the latching mechanism includes a rotatable connecting member comprised of a single piece or of separate pieces attached together and the actuator includes a handle assembly operable through pivotal movements of a handle. In operation, the actuator is mountable in a panel or similar member so that the pivoting motion of the handle occurs along a longitudinal axis of the connecting member.
Patent TW-555698-B (TW)
Title: Storage type strong electrolytic water production device and receiver thereof
Inventor: YAMAGUCHI SHIYUUJI
IPC: C02F1/46
Filed: 1999-07-06
Granted: 2003-10-01
Abstract: The purpose of the present invention is to obtain a small quantity of strong electrolytic water by feeding water of high conductivity into an electrolytic bath from a storage tank, in which raw water is previously mixed with a salt via an electromagnet valve opened when energizing. The water of high conductivity mixed with an alkali chloride compound at a specified composition is preserved in the storage tank 1, and thus this device is prepared to use the water of high conductivity flowing out from the tank 1 flows into the electrolytic bath 5 via a water level sensor 3 when the electromagnetic valve 4 opens during energizing, and is subjected to strong electrolysis. Then, the water is discharged from water discharge ports 14, 15 respectively of a cathode room 8 and an anode room 10 into a receiver mounted inside the device. A piping 12 reaching from the water level sensor to the electromagnet valve 4 that opens during energizing, a bottom piping 13 of the electrolytic bath 5, and an electrolysis bath side end of the electromagnet valve 4 that opens during energizing are connected with a drain cock 11, and the water of high conductivity present in the bottom can be discharged through a discharge port 18.
Patent TW-473499-B (TW)
Title: Photochromic ophthalmic lens
Inventor: KRISHNAN SIVARAM
IPC: C09K9/02
Filed: 1999-07-21
Granted: 2002-01-21
Abstract: A photochromic ophthalmic lens and a process for its preparation are disclosed. The lens comprise a substantially transparent substrate having a lenticular shape and, at least one film adhering to at least one surface of said substrate. The film contains a resinous blend of polycarbonate resin, and poycaprolactone and an effective amount of a photochromic dye selected from a group consisting of spiropyrans, spiroxazines, fulgides and fulgimides. In an additional embodiment the film contains a copoly(carbonate-lactone) block or random copolymer.
Patent TW-463222-B (TW)
Title: Semiconductor wafer, manufacturing method of semiconductor wafer and semiconductor apparatus
Inventor: MATSUMOTO MASAHIKO
IPC: H01L29/06
Filed: 1999-09-06
Granted: 2001-11-11
Abstract: The purpose of the present invention is to provide the wafer and the manufacturing method of semiconductor wafer as well as to obtain a semiconductor apparatus formed by the same wafer, in which fluctuations in transistor characteristics are reduced by preventing Cu diffusion into silicon produced by a heat treatment such as the forming process of Cu wiring. In the present invention, a protective insulating film (protective film made of material having a small Cu diffusion coefficient) is formed for preventing the diffusion of Cu into the inside of a wafer at the peripheral portion of the main surface of the wafer, on its outer peripheral surface and back surface. This protective insulating film prevents the diffusion of Cu or the like, which is the wiring material, into a chip forming region of the wafer, thereby suppressing fluctuations in transistor characteristics caused by Cu diffusion.
Patent TW-501317-B (TW)
Title: Floating module connection device
Inventor: KUNG SHAO-TSU
IPC: H01R13/74
Filed: 1999-10-30
Granted: 2002-09-01
Abstract: The present invention provides a floating module connection device, which is configured with a connector and a connection member in a shell for connecting with other devices. The connection member comprises a flexible bus (FPC) and an adaptive plate for correspondingly penetrating each conductive terminal of the connector as electrical connection. The invention is characterized in that: a retaining wall is arranged in the shell opposite to the adaptive plate; and, the adaptive plate and the opposite wall to the retaining wall are in a low frictional contact for providing a fully floating contact. Thus, during connecting, it can provide the effects of stable contact and fully floating; and, during the plugging operation, the retaining wall is used to evenly endure the front insertion force, so as to obtain the effect of uniform force on the adaptive plate.
Patent TW-477714-B (TW)
Title: Showerhead for delivering a aerated water stream by use of the Venturi effect
Inventor: KNAPP ALFONS
IPC: B05B1/26
Filed: 2000-02-09
Granted: 2002-03-01
Abstract: The showerhead (10) includes a main housing (12) that forms the central supply inlet (16), a supply passage section (20) for the central inlet and a peripheral deflector (22). A disc (26) is applied to the main housing (12). The Venturi passage (40) are made up between housing (14) and the disc (26). A showerhead (10) is intended to deliver an aerated stream of water that has passed through and has been aerated by Venturi passages 40. The Venturi passages (40) radially extend from the supply inlet (16) toward the periphery (22) of the head (14). An air intake passage (44) communicates with the ambient exterior and also communicates with the Venturi passage between its nozzle (50) and diffuser (52). The deflector (22) is arranged to divert the aerated stream of water coming out of the individual Venturi passages in order to deliver them in substantially axial direction perpendicular to the plane (29) of the showerhead.
Patent TW-437021-B (TW)
Title: Method for decreasing the reduction of the thickness of the offset spacer
Inventor: CHEN DUNG-PO
IPC: H01L23/00
Filed: 2000-02-14
Granted: 2001-05-28
Abstract: There is provided a method for decreasing the reduction of the thickness of the offset spacer. The method forms an offset spacer on the sidewall of the gate and performs a thermal processing step after forming the offset spacer, so as to not only patch the damage on the surface of the offset spacer caused by etching the offset spacer but also effectively avoid the reduction of the thickness of the offset spacer due to the cleaning process after the ion implantation step. Furthermore, the short channel effect can be avoided and the capacitance between the gate and drain can be decreased. In addition, the manufacturing problem such as the instable width of the offset spacer can be eliminated.
Patent TW-550142-B (TW)
Title: Method and apparatus for slurry polishing
Inventor: MORGAN CLIFFORD O III
IPC: C09G1/02
Filed: 2000-03-10
Granted: 2003-09-01
Abstract: A method and apparatus for chemical-mechanical polishing of semiconductor wafers using various formulations of high viscosity slurry. A method of chemical-mechanical polishing of a semiconductor wafer, the method comprising the steps of: coating the semiconductor wafer with a high viscosity slurry; and polishing the slurry-coated wafer with a polishing pad.
Patent TW-591306-B (TW)
Title: Liquid crystal display device and its production
Inventor: ASUMA HIROAKI
IPC: G02F1/1337
Filed: 2000-03-22
Granted: 2004-06-11
Abstract: The present invention is provided to prevent non-uniform brightness in display screen of a liquid crystal display device caused by non-uniform gap (two sets of gaps) of a pair of substrates sandwiching a liquid crystal layer, and the generation of cross talk when the brightness of display screen is decreased. In the manufacturing process of the liquid crystal display device, distributed resin PRS of particles RU each having particle diameter with desired standard cell gap is laminated on a transfer-printing piece formed by a base film. The resin PRS is transfer-printed on one of the color filter substrate or active matrix substrate of the liquid crystal display device. The surface of the substrate is formed with columnar spacers containing particles RU.
Patent TW-I267358-B (TW)
Title: Cactus fruit health products
Inventor: CHEN JAU-FEI
IPC: A23L19/00
Filed: 2000-04-20
Granted: 2006-12-01
Abstract: The present invention relates to novel compositions of cactus fruit extract and other health promoting ingredients. Preferred embodiments also comprise ginseng berry extract. These compositions provide nutrition, physiological stimulation, moisturization and other benefits through ingestion and topical application. The compositions and methods of preferred embodiments of the present invention provide a natural vitamin containing composition for beverages, food products, dietary supplements and topical applications which provide the consumer with a refreshing, delicious, stimulating and/or healthful experience.
Patent TW-522124-B (TW)
Title: Stainless steel canister for propellant-driven metering aerosols
Inventor: NAGEL JUERGEN
IPC: B65D83/14
Filed: 2000-05-26
Granted: 2003-03-01
Abstract: The present invention relates to corrosion resistant stainless steel canisters for propellant-containing aerosol formulations for use in propellant gas-operated inhalers. Canister (1) for propellant operated metering aerosols consisting of a container (2) and a valve cup (8) with valve (9) embedded therein, characterized in that the container comprises an alloy having a content of Iron (Fe) of 40.0-53.0%, Nickel (Ni) of 23.0-28.0%, Chromium (Cr) of 19.0-23.0%, Molybdenum (Mo) of 4.0-5.0%, and Copper (Cu) of 1.0-2.0%.
Patent TW-I223677-B (TW)
Title: Method and apparatus for forming polycrystalline particles
Inventor: TAN ZHAOSHENG
IPC: H05B7/18
Filed: 2000-06-13
Granted: 2004-11-11
Abstract: Disclosed herein is a method and apparatus for forming polycrystalline particles by gas phase condensation employing arc plasma evaporation. The disclosed method and apparatus may be employed to form polycrystalline particles from high-melting temperature, low evaporation pressure materials such as transition metals. Arc discharge is sustained by the evaporated species, therefore, there is no need for a plasma sustaining gas. Evaporation may be sustained from either the cathode or anode. A reaction gas may be provided to form products with the evaporated species.
Patent TW-514771-B (TW)
Title: Computer integrated manufacturing techniques
Inventor: ARACKAPARAMBIL JOHN F
IPC: G05B19/418
Filed: 2000-07-21
Granted: 2002-12-21
Abstract: The present invention provides a novel distributed factory system framework including a novel factory automation lifecycle (200) having lifecycle activities for SW developing and integrating (210), installing and administrating (220), factory modeling (230), manufacturing planning (240), manufacturing controlling, monitoring and tracking (250) and analyzing of manufacturing results (260). The factory lifecycle comprises framework components. The distributed factory system framework also includes application components and SW building blocks. The framework components are adapted for managing the application components, while the application components are utilized to provide instructions for managing a process such as a wafer fab. The building blocks are adapted for forming or modifying framework and application components. The distributed factory system framework provides computer implemented methods for integrating processing systems and facilitates process and equipment changes.
Patent TW-572827-B (TW)
Title: Multilayered stretched resin film
Inventor: ISHIGE ATSUSHI
IPC: C08J7/04
Filed: 2000-08-04
Granted: 2004-01-21
Abstract: The present invention discloses a multi-layered stretched resin film which comprises a base layer (A) containing a polyolefinic resin in an amount of more than 90 wt% and 100 wt% or less, and an inorganic fine powder or an organic filler in an amount of 0 wt% or more and less than 10 wt%; and an amorphous resin-containing layer (B) provided at least on one side of such base layer (A), and containing 0 to 85 wt% of a polyolefinic resin and 15 to 100 wt% of an amorphous resin; wherein such amorphous resin-containing layer (B) has a porosity of 5% or below. Such multi-layered stretched resin film is successfully exempt from being waved or curled due to vehicle contained in offset printing ink during offset printing, and can thus ensure excellent printing property.
Patent TW-451094-B (TW)
Title: Optical connector
Inventor: OHBAYASHI YOSHIAKI
IPC: G02B6/36
Filed: 2000-10-20
Granted: 2001-08-21
Abstract: The optical connector of the present invention performs the functions that, even when the counter optical connector is bended during an inserting or extracting operation, the bending force is not transferred to the cover, and that the external appearance can be changed only by changing the design of the cover. A cover 30 is attached in an openable and closable manner to the body 10 having a fitting hole portion 17 into which the counter optical connector is to be inserted. The fitting hole portion 17 is formed by an internal space which is surrounded by a cylindrical wall 15 disposed in the case body 10. The cover 30 has a covering wall portion 31 which is fit to and detachable from an outside of the case body 10.
Patent TW-469536-B (TW)
Title: Method for forming a structure with inclined sidewall
Inventor: JANG CHING-YU
IPC: H01L21/8246
Filed: 2000-12-13
Granted: 2001-12-21
Abstract: There is provided a method for forming a structure with inclined sidewall. In the present invention, the difference in etching rates between silicon oxynitride and silicon nitride is utilized to achieve a slight etching on silicon oxynitride in etching silicon nitride. When the silicon nitride has been etched, the upper portion of the silicon oxynitride connected thereto is etched for a longer time by the etching solution than the lower portion, thereby forming a silicon oxynitride residue structure with inclined sidewall. By using the present method, it is able to effectively solve a problem that the word line in the protection layer above the buried diffusion area can not be completely etched off due to the vertical sidewall in the conventional mask ROM process.
Patent TW-480609-B (TW)
Title: Coating film forming apparatus and coating film forming method
Inventor: KITANO TAKAHIRO
IPC: H01L21/00
Filed: 2000-12-19
Granted: 2002-03-21
Abstract: A coating area of wafer W is divided into, for example, three regions. The wafer W and/or a supply nozzle are driven in a predetermined coating direction and/or a coating direction such that coating start positions of the adjacent divided regions are not next to each other and/or the coating is not continuously performed in order of a coating end position and a coating start position when the coating end position of one region of the adjacent divided regions and the coating start position of the other region are adjacent to each other, whereby forming a liquid film of a resist liquid for each divided region of the surface of wafer W. As a result, a phenomenon, in which the resist liquid is drawn to the coating start position, so as to increase the film thickness of this portion, occurs in only the corresponding region. Resultantly, uniformity of an inner surface of the film thickness can be improved.
Patent TW-515071-B (TW)
Title: Automatic landing via definition method
Inventor: WU KING-LUNG
IPC: H01L23/50
Filed: 2001-01-12
Granted: 2002-12-21
Abstract: An automatic landing via definition method is provided. First, form a conductive layer and a PR (photoresist) layer on the semiconductor wafer. Then define plural word line patterns on the PR layer and also define auxiliary patterns on the PR layer of expected landing via regions that are among the word lines. Furthermore, use the patterned PR layer as a hard mask to etch the conductive layer to make word lines on the wafer and to simultaneously make auxiliary protruding block on the surroundings of the landing via region. Finally, form plural mutually connected spacers on the word lines and auxiliary protruding blocks to make landing via holes and then automatically define the position of the landing via.
Patent TW-550704-B (TW)
Title: Electrically insulating crosslinked thin-film-forming organic resin composition and method for forming thin film therefrom
Inventor: NAKAMURA TAKASHI
IPC: C08J5/18
Filed: 2001-02-01
Granted: 2003-09-01
Abstract: An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for forming a crosslinked thin film therefrom.
Patent TW-479275-B (TW)
Title: Method for raising bonding capability of bonding pad
Inventor: YU JEN-HUA
IPC: H01L23/52
Filed: 2001-02-02
Granted: 2002-03-11
Abstract: The present invention changes the layout design of mask used in the photolithographic process of metal bonding pad. In the conventional mask design, the spacing between via hole and neighboring via hole is designed as 1:3 or 1:1. The present invention designs the mask in a radiation shape, in which the spacings between via holes are designed as 1:1, 1:2, and 1:3 from the outer periphery to the center such that the spacing is gradually changed from dense to sparse. Additionally, the spacing between via holes can be changed depending on the process requirement. Therefore, the formed via hole of metal bonding pad is able to solve the problems, which affect device performance, such as poor bonding property, poor heat dissipation effects, insufficient support force between metal layers and coupling generated due to the etching of dielectric layer.
Patent TW-494450-B (TW)
Title: Communicating device
Inventor: RAMDANI JAMAL
IPC: H01L27/14
Filed: 2001-02-09
Granted: 2002-07-11
Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer; communication devices may be fabricated in both the monocrystalline compound semiconductor layer and/or the silicon.
Patent TW-472346-B (TW)
Title: Method for increasing the shallow trench corner roundness and flatness
Inventor: KAO CHIA-HUNG
IPC: H01L21/76
Filed: 2001-03-09
Granted: 2002-01-11
Abstract: The present invention provides a method for increasing the shallow trench corner flatness. A thin silicon nitride layer and a polysilicon layer are deposited on a hard mask and a substrate, respectively. Therefore, when etching the substrate to form a trench, the trench corner can be made round and flat by an etching step. Moreover, it is able to avoid the generation of leakage current by using the insulator filled in the subsequent process to protect the trench corner, and further to avoid the problem in that the gate oxide layer is too thin.
Patent TW-490864-B (TW)
Title: Light-emitting semiconductor device and surface-emitting device
Inventor: NEI MASAMI
IPC: F21V8/00
Filed: 2001-03-16
Granted: 2002-06-11
Abstract: The present invention provides a surface-emitting device 20, which includes: a semiconductor light-emitting device 10; a board 21; and a light guide plate 22. The semiconductor light-emitting device 10 includes an inverted T-shaped substrate 1 having a base portion 1a, on which a pair of electrodes 2 and 3 are formed, and a mounting portion 1b, on which a light emitter 4 is mounted. The semiconductor light-emitting device 10 is mounted through the board 21 with the mounting portion 1b set through an opening 21a formed in the board 21. A light guide plate 22 is mounted on the board 21 so that a face of the plate 22 faces the light emitter 4. Each of the pair of electrodes 2 and 3 is formed on the substrate 1 of the device 10 so as to be electrically connected to the light emitter 4 and to a circuit pattern formed on the board 21.
Patent TW-484229-B (TW)
Title: Semiconductor integrated circuit
Inventor: MIZUNO KANJI
IPC: H01L23/525
Filed: 2001-03-30
Granted: 2002-04-21
Abstract: The semiconductor integrated circuit has a TaN layer as a trimming device. Current trimming and laser trimming can be performed on this TaN layer. A part of a metal wiring layer is removed to expose a TaN layer functioning as a metal barrier of the metal wiring layer provided on the TaN layer, thereby obtaining a TaN single layer portion. The TaN single layer portion is used as a resistor for trimming functioning as a fuse.