baber/WOPTO huggingface dataset:
Patent TW-405294-B (TW)
Title: Power conversion device
Inventor: KURIYAMA SHIGEMI
IPC: H02H3/24
Filed: 1997-10-28
Granted: 2000-09-11
Abstract: The present invention is related to a power conversion device. More specifically, the present invention is directed to a power conversion device capable of realizing upper/lower short circuit detection by an inverter circuit by employing a simple circuit arrangement without using a current detector. The power conversion device of the present invention is comprised of an inverter unit arranged by a switching semiconductor element 51a for an upper arm and another switching semiconductor element 51d for a lower arm, and for turning ON/OFF the switching semiconductor elements to thereby convert DC power inputted from a DC power supply into AC power; a voltage detecting circuit for detecting an output voltage of the inverter unit via a voltage dividing resistor based on the positive or negative voltage level of the DC power, thereby judging as to whether or not a detection voltage detected by a voltage detecting circuit 61 is substantially equal to a voltage of the positive polarity; an output of a comparator 11b for judging as to whether or not a detection voltage detected by the voltage detecting circuit 61 is substantially equal to a voltage of the negative polarity; and control means 10a for judging as to whether or not an abnormal operation is present based upon outputs derived from an igniting signal for ON/OFF-controlling the switching semiconductor elements51a and 51d.
Patent TW-363301-B (TW)
Title: Device and method for cooling a motor
Inventor: SHEERIN GEOFFREY T
IPC: F28D1/03
Filed: 1998-01-17
Granted: 1999-07-01
Abstract: A kind of air cooler for closed shell type motor in which installed two air-to-air heat exchangers are installed in a closed region which is inside the shell. The cooler is mounted on top of an opening of motor shell. These heat exchangers let the cooling pipes of exchangers extend perpendicular to the longitudinal axis of motor. The exchangers are allocated at both ends of motor and slanted with each other as an A-type structure. The lagging and shell form a closed region which separate the inner air and outside air. An inlet pressuring chamber is connected with the lagging on one side to guide the ambient air entering the cooling pipe of heat exchanger from one end and let the ambient air to be expelled from the pipe of the other end. The air around the motor is heated during operation and circulated by an internal fan between those heat exchanger. The motor air is cooled to an approximately homogeneous temperature and returned to the associated ends of the motor so that the temperature differential for both ends is minimum. By increasing the quantity of cooling pipes and shortening their lengths, it can reduce the pressure drop through the pipes and increase the efficiency of the said fan to guide the ambient air flowing into the pipes. In the exchangers the twisted pipes can replace the used round pipes to enhance the performance, furthermore, the plate type air-to-air heat exchanger can also be used.
Patent TW-379422-B (TW)
Title: Method for the production of CMOS circuit arrangement
Inventor: BIEBL MARKUS
IPC: H01L27/092
Filed: 1998-03-10
Granted: 2000-01-11
Abstract: In order to produce a CMOS circuit arrangement, an n-channel MOS transistor and a p-channel MOS transistor are formed in a semiconductor substrate. In situ p-doped, monocrystalline silicon structures are formed by epitaxial growth selectively with respect to insulating material and with respect to n-doped silicon, which silicon structures are suitable as a diffusion source for forming source/drain regions of the p-channel MOS transistor. The source/drain regions of the n-channel MOS transistor are produced beforehand by means of implantation or diffusion. Owing to the selectivity of the epitaxy that is used, it is not necessary to cover the n-doped source/drain regions of the n-channel MOS transistor during the production of the p-channel MOS transistor.
Patent TW-473516-B (TW)
Title: Mixtures of reactive disazo dyes, reactive disazo dyes and their use
Inventor: LEHMANN URS
IPC: C09B62/475
Filed: 1998-04-04
Granted: 2002-01-21
Abstract: Dye mixtures comprising at least one reactive dye of formula together with at least one reactive dye of formula give dyeings having good fastness properties on nitrogen-containing or hydroxyl group-containing fibre materials.
Patent TW-430986-B (TW)
Title: Manufacture method of DRAM capacitor
Inventor: GAU JING-HUNG
IPC: H01L27/108
Filed: 1998-04-13
Granted: 2001-04-21
Abstract: A manufacture method of DRAM capacitor that can apply the hemi-spherical grained (HSG) poly-silicon to the cylinder type capacitor is disclosed. This new structure effectively raises the surface area of the capacitor to increase the charge storage capacity of capacitor. Besides, when the capacitor process is completed, planarization step is not necessary prior the following process. On the other hand, a dielectric layer is formed on the insulated layer covering the MOS transistor and a spacer is formed on the sidewall of contact to increase the isolation effect of the insulated layer.
Patent TW-373197-B (TW)
Title: Electronic device having electric wires and the manufacturing method thereof
Inventor: TOI TAKAOMI
IPC: H01F27/29
Filed: 1998-04-22
Granted: 1999-11-01
Abstract: The invention provides with an electronic device such as a chip coil including an electric wire firmly connected to electrodes in a highly reliable fashion, and mountable on a printed circuit board or the like in a stable fashion. At both ends of a core, there are electrodes having a multilayer structure consisting of a high-conductivity layer made of Ag, Ag-Pd, or a similar material; a solder barrier layer made of Ni; and an easy-soldering layer made of Sn or solder. End portions of the electric wire are embedded in the easy-soldering layer so that the resultant electrode structure has substantially flat surface. A thermo-compression process is performed so that the end portions of the electric wire are connected to the solder barrier layer by means of solid welding and to the easy-soldering layer by means of brazing.
Patent TW-366539-B (TW)
Title: Method of manufacturing high-voltage component substrates
Inventor: LI JIA-SHENG
IPC: H01L21/336
Filed: 1998-04-23
Granted: 1999-08-11
Abstract: A method of manufacturing high-voltage component substrates, including the forming on the substrate accordingly cushioned oxide layer and mask layer. Definition of the first ion doped area to be formed, and the rest of the area being oxidized to form field oxide layer. Then, removal of the mask layer for the first ion distribution, with removal of part of the field oxide layer. Then, with removal of the oxidized layer area, with carrying out the second ion distribution and forming a shared oxide layer on the surface of the substrate. Then, introduction of high temperature and oxidization process, making the ions in the first ion distribution area and the second ion distribution area diffuse toward the inside of the substrate, while making substrate of the first ion distribution area and the second ion distribution areas oxidize. Removal of all the oxide layer from the surface of the substrate and forming crystal layer on the surface of the substrate.
Patent TW-459021-B (TW)
Title: New disazo dyestuffs
Inventor: KALWEIT DETLEF
IPC: C09D11/00
Filed: 1998-05-12
Granted: 2001-10-11
Abstract: The invention is concerned with compounds according to the formula and their salts, wherein X represents hydrogen or chloro, R1 and R3 represent hydrogen or methyl, R2 and R4 represent hydrogen, methyl or methoxy, and R5 represents hydrogen or C1-4alkyl, which are useful as fiber-reactive dyestuffs in dyeing and printing hydroxy-group-containing as well as nitrogen-containing organic substrates and for the preparation of printing inks which are suitable for the ink jet process.
Patent TW-552260-B (TW)
Title: Endothelin antagonists
Inventor: TASKER ANDREW S
IPC: C07D491/048
Filed: 1998-08-10
Granted: 2003-09-11
Abstract: A compound of the formula (1) or a pharmaceutically acceptable salt thereof is disclosed, as well as processes for and intermediates in the preparation thereof, and a method of antagonizing endothelin. A substantially pure compound selected from group consisting of (2S,3R,4S)-2-(2,2-Dimethylpentyl)-4-(7-methoxy-1,3-benzodioxol-5-yl)-1-(N,N-di(n-butyl)aminocarbonylmethyl)-pyrrolidine-3-carboxylic acid; [2S,3R,4S]-2-(4-Methoxyphenyl)-4-(1,3-benzodioxol-5-yl)-1-[(N-butyl-N-(4-dimethylaminobutyl)amino)carbonylmethyl]-pyrrolidine-3-carboxylic acid; [2S,3R,4S]-2-(2,2-Dimethylpentyl)-4-(7-methoxy-1,3-benzodioxol-5-yl)-1-(N-butyl-N-(4-dimethylaminobutyl)amino)carbonylmethyl]-pyrrolidine-3-carboxylic acid; [2S,3R,4S]-2-(2,2-Dimethylpent-3-enyl)-4-(1,3-benzodioxol-5-yl)-1-[(N-butyl-N-(4-dimethylaminobutyl)amino)carbonylmethyl]-pyrrolidine-3-carboxylic acid; [2S,3R,4S]-2-(2,2-Dimethylpent-3-enyl)-4-(7-methoxy-1,3-benzodioxol-5-yl)-1-(N-butyl-N-(4-dimethylaminobutyl)amino)carbonylmethyl]-pyrrolidine-3-carboxylic acid; or a salt or ester thereof.
Patent TW-394956-B (TW)
Title: A semiconductor memory device which reduces pre-charging time
Inventor: LEE JUNG-HWA
IPC: G11C11/401
Filed: 1998-09-30
Granted: 2000-06-21
Abstract: This high-density semiconductor memory device provides a kind of balancing circuit so as to balance the signal isolation, the signal connection, its control bitline, and the readout amplifier. When the pre-charging is initiated, the balancing circuit responds to the block selection signal, balancing and isolating the signal for transferring. Thus the pre-charging time can be reduced.
Patent TW-391147-B (TW)
Title: Method for manufacturing a u-shaped yoke for alnico/neodium magnet with a multistage cold forming machine
Inventor: SHIN TAE JOONG
IPC: H04R5/02
Filed: 1998-10-27
Granted: 2000-05-21
Abstract: The present invention relates to a method for manufacturing a U-shaped yoke for an alnico magnet or a neodium magnet used in a speaker of electronic appliances. Through such a manufacturing method, a slant portion and a stepped portion formed at an entrance portion of an accommodating unit, and an insude protrusion in the U-shaped yoke are integrally forms through once pressing with a multistage cold forming machine, thereby enhancing durability of a finished product. Also, post-processing is removed by integal formation with the forming machine. According, the present invention provides an effect that the overall production cost can be economized, including the decrease of manufacturing works, reduction of a manufacturing time and curtailment of a material cost.
Patent TW-391095-B (TW)
Title: Mobile communication device having GPS function and its instant information acquisition method
Inventor: HE CHI-YU
IPC: H04B7/08
Filed: 1998-12-11
Granted: 2000-05-21
Abstract: This invention relates to a mobile communication device and its instant information acquisition method. The mobile communication device comprises a GPS receiver and a communication transceiver. The GPS receiver generates a certain location information according to a positioning signal and the communication transceiver receives and transmits the certain location information to a communication network and downloads the required information from one server in the communication network. Therein, the communication transceiver will generate an information request signal and transmit the signal to communication network along with the received certain location position. The server in the communication network will transmit the required information to communication transceiver according to the certain location information and information request signal.
Patent TW-437017-B (TW)
Title: Silicone polymer insulation film on semiconductor substrate and method for formation thereof
Inventor: MATSUKI NOBUO
IPC: C23C16/40
Filed: 1999-02-03
Granted: 2001-05-28
Abstract: The present invention discloses a method for forming a silicone polymer insulation film having a low relative dielectric constant, a high heat resistance and a moisture absorption resistance by using plasma CVD deposition. At a first stage, a silicon-containing hydrocarbon compound expressed by a general formula of SiΑOβCxHy (where Α, β, x and y are integers) is introduced into a reaction chamber of the plasma CVD apparatus. The silicon-containing hydrocarbon compound has at most two O-CnH2n+1 bonds and at least two hydrocarbon radicals bonded to the silicon. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low dielectric constant.
Patent TW-468106-B (TW)
Title: Navigating network resources based on metadata
Inventor: TEARE KEITH
IPC: G06F17/30
Filed: 1999-02-02
Granted: 2001-12-11
Abstract: Mechanisms for associating metadata with network resources, and for locating the network resources in a language-independent manner, are disclosed. Owners of network resources define metadata that describes each network resource. The metadata may include a natural language name of the network resource, its location, its language, its region or intended audience, and other descriptive information. The owners register the metadata in a registry. A copy of the metadata is stored on a server associated with a group of the network resources. A copy of the metadata is stored in a registry that is indexed at a central location. A crawler service periodically updates the registry by polling the information on each server associated with registered metadata. To locate a selected network resource, a client provides the name of the network resource to a resolver process. The resolver process provides to the client the network resource location corresponding to the network resource name. Multiple metadata mappings can be established for the same network resource, in which each mapping stores a name expressed in a different natural language. Accordingly, network resources can be located merely by providing the name of the network resource in any natural language that is convenient for the client.
Patent TW-408378-B (TW)
Title: Method for manufacturing semiconductor devices
Inventor: LIN SHI-CHIN
IPC: H01L21/28
Filed: 1999-05-18
Granted: 2000-10-11
Abstract: A method for manufacturing semiconductor devices, which forms a gate electrode on the substrate and covers a pad layer and an insulating layer; then, remove part of the insulating layer by the anisotropic etching process, to form a spacer on the insulating layer remained on the sidewalls of the gate electrode, and the height of the top of this spacer is about equal to the height of the top of the pad layer. Then, use the wet etch process to remove part of the spacer until the final height of the top of the spacer is lower than the height of the top of the gate electrode in order to increase the surface area of the exposed gate electrode.
Patent TW-416010-B (TW)
Title: Method in manufacturing a reverse reflection board and pin elements for producing the reverse reflection board
Inventor: SHIU JEN-SHIUN
IPC: B29C45/00
Filed: 1999-07-16
Granted: 2000-12-21
Abstract: The invention primarily relates to a method in producing a reverse reflection board, which includes the following procedures: (1) produce plural pin elements by injection molding method, in which the pin elements comprise a portion with relatively large width and a portion with relatively small width connecting with the bottom of the portion with relatively large width along the longitudinal direction of the pin element while the end of the portion with relatively large width away from the portion with relatively small width forms a shrinking gradient portion; (2) align the plural pin elements in accordance with the requirement to position on a base seat, in which the base seat contains at least a surface and plural concave portions on the surface. The portion with smaller width of those pin elements can be accommodated to part of the concave portion to fasten those pin elements; (3) produce a master negative die with a complementary shape based on the shrinking shape of those aligned plural pin elements; and (4) employ the master negative die to form a complementary shape reverse reflection board. The invention can significantly lower the production cost of the reverse reflection board and reduce work hours, further ensuring manufacturer to conveniently and precisely produce the reverse reflection board with different pattern and function.
Patent TW-500783-B (TW)
Title: Polishing composition
Inventor: KODAMA HITOSHI
IPC: B24B37/00
Filed: 1999-08-26
Granted: 2002-09-01
Abstract: A polishing composition for polishing a memory hard disk, which comprises water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide and which further contains an iron chelate complex dissolved in the composition, the iron chelate complex having a nitrogen-containing compound as a ligand, and the pH of the entire composition being from 6 to 10.
Patent TW-442407-B (TW)
Title: Security document including a nanoparticle-based authentication device
Inventor: ZIENTEK PAUL
IPC: B42D25/29
Filed: 1999-09-28
Granted: 2001-06-23
Abstract: A security document (1) comprising a sheet-like substrate (2) having one or more layers (8, 9) containing particles for forming an authentication device in a first location on a security document, the particles having at least a first dimension in the range of 1 to 200 nanometers.
Patent TW-463193-B (TW)
Title: An electrolyte solution for use in operation of an electrolytic capacitor and electrolytic capacitor
Inventor: KOMATSU AKIHIKO
IPC: H01G9/02
Filed: 1999-12-01
Granted: 2001-11-11
Abstract: An electrolyte solution for use in operation of an electrolytic capacitor comprising a solution containing a solvent consisting of 20 to 80% by weight of an organic solvent and 80 to 20% by weight of water, and at least one electrolyte selected from the group consisting of a carboxylic acid or a salt thereof and an organic salt or a salt thereof, having added thereto at least one nitro compound selected from the group consisting of nitrophenol, nitrobenzoic acid, nitroacetophenone and nitroanisole. The electrolyte solution shows a low impedance and excellent low-temperature characteristics, along with a good work life, and also it can exhibit an excellent hydrogen absorption function when an electrolytic solution contains a highly increased amount of water in its mixed solvent or when an electrolytic capacitor is under high temperature conditions.
Patent TW-I241870-B (TW)
Title: Method for mounting an electronic component
Inventor: ONDRICEK DOUGLAS S
IPC: G01R31/01
Filed: 1999-12-03
Granted: 2005-10-11
Abstract: A method for mounting an electronic component. In one example of this method, the electronic component is an integrated circuit that is placed against an element of a carrier, such as a frame of a carrier. The electronic component has a plurality of elongate, resilient, electrical contact elements that are mounted on corresponding first electrical contact pads on the electronic component. The electronic component is secured to the carrier, and the carrier is pressed against a first substrate having a plurality of second electrical contacts adjacent a surface of the first substrate. In a typical example of this method, the electronic component is an integrated circuit that can be tested while being held in a carrier. The integrated circuit has been singulated from a wafer containing a plurality of integrated circuits.
Patent TW-466727-B (TW)
Title: Substrate structure capable of preventing the solder mask layer on a device location area from generating cracks
Inventor: HUANG CHIEN-PING
IPC: H01L23/492
Filed: 1999-12-17
Granted: 2001-12-01
Abstract: There is provided a substrate structure capable of preventing the solder mask layer on a device location area from generating cracks. The structure includes a substrate having an upper surface and a lower surface. The substrate is further divided into a periphery area and a device location area. The upper and lower surfaces are formed with a solder mask layer which exposes part of the upper and lower surfaces of the substrate for thereby forming an exposed area. The exposed area divides the solder mask layer into two disconnected periphery area solder mask layer and device location area solder mask layer.
Patent TW-441111-B (TW)
Title: Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region
Inventor: LETAVIC THEODORE
IPC: H01L21/336
Filed: 2000-01-20
Granted: 2001-06-16
Abstract: A lateral thin-film silicon-on-insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral MOS device on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and over at least a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region. In order to provide an optimum combination of low ""on"" resistance and high breakdown voltage, the lateral drift region is provided with a graded lateral doping profile, with two substantially linearly graded drift region portions having different doping profile slopes. Specifically, the slope of the doping profile is higher in the portion of the lateral drift region adjacent the drain region than in the portion of the lateral drift region adjacent the body region.
Patent TW-459250-B (TW)
Title: Co-solidification of low level radioactive wet wastes of BWR nuclear power plants
Inventor: HUANG CHING-TSUEN
IPC: B09B3/00
Filed: 2000-01-28
Granted: 2001-10-11
Abstract: This invention discloses a method for the co-solidification of low-level radioactive wet wastes of BWR nuclear power plants, including concentrate waste, spent ion exchange resins and sludge wastes etc., with very high volume efficiency. In this invention, for promoting the stability of the solidified waste, sodium sulfate in the concentrate solution is converted to sodium hydroxide and barium sulfate by reacting with barium hydroxide. The conversion product barium sulfate possessing high density and stability is insoluble and used as a fine aggregate material in the solidified waste. Sodium hydroxide is used to stabilize ion exchange resins and to form a highly water-durable solidified waste form with silicates and phosphates in the solidification agent mixture. The solidification agent mixture. The solidification agent used in this invention is a formulated powder mixture completely made from inorganic materials. Therefore, there is no aging problem of the solidified waste. In this invention, the waste loading of the solidified waste is highly increased due to the conversion of sodium sulfate and the co-solidification of wastes. Thus, the solidification volume efficiency of the present invention is about three times of the solidification of the wastes separately.