baber/WOPTO huggingface dataset:
Patent TW-466419-B (TW)
Title: Automatic placement method for array device
Inventor: YANG JIUN-JR
IPC: G06F17/50
Filed: 1998-11-20
Granted: 2001-12-01
Abstract: The present invention provides an automatic placement method for array device which can automatically generate the schematic script file for component placement based on the predetermined circuit topology, connection table, and other parameters; then, loading into the layout program for automatic layout process by the layout program; after the layout is completed, immediately conducting RC extraction so as to reduce the time for manual layout and file conversion and also reduce the lead time.
Patent TW-473458-B (TW)
Title: Stable hydride source compositions for manufacture of semiconductor devices and structures
Inventor: BAUM THOMAS H
IPC: H01L21/205
Filed: 1998-11-24
Granted: 2002-01-21
Abstract: A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (21H) or tritium (31H) isotope. The metal constituent of such metal hydride may be a group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.
Patent TW-455953-B (TW)
Title: Annealing of a crystalline perovskite ferroelectric cell and cells exhibiting improved barrier properties
Inventor: AGGARWAL SANJEEV
IPC: G06Q50/30
Filed: 1998-12-08
Granted: 2001-09-21
Abstract: A method of fabricating a ferroelectric capacitor usable as a memory cell in a non-volatile integrated circuit memory integrated on a silicon substrate, preferably including an intermetallic barrier layer. The memory cell consists of a ferroelectric layer, for example of lead niobium zirconium titanate (PNZT) sandwiched between metal oxide electrodes, for example of lanthanum strontium cobaltite (LSCO), which forms with a crystalline orientation and provides a growth template for the crystalline formation of the ferroelectric. The intermetallic layer prevents diffusion of oxygen from the bottom LSCO electrode down to the underlying silicon. At least the bottom electrode is subjected to a rapid thermal anneal at an annealing temperature above its growth temperature. Thereby, the polarization and fatigue characteristics of the ferroelectric cell are improved. Also, a similar intermetallic layer may be placed above the ferroelectric cell. A preferred composition of the intermetallic layer is a refractory silicide, especially a refractory disilicide.
Patent TW-584678-B (TW)
Title: Crystal growth
Inventor: DAVIES GEOFFREY JOHN
IPC: C30B29/04
Filed: 1999-02-06
Granted: 2004-04-21
Abstract: The invention provides a mass of crystals, particularly diamond crystals, having a size of less than 100 microns and in which mass the majority of the crystals are faceted single crystals. The invention further provides a method of producing such a mass of crystals which utilises crystal growth under elevated temperature and pressure conditions, the supersaturation driving force necessary for crystal growth being dependent, at least in part, on the difference in surface free energy between low Miller index surfaces and high Miller index surfaces of the crystals.
Patent TW-432717-B (TW)
Title: Two square NVRAM cell
Inventor: LAM CHUNG H
IPC: H01L21/8247
Filed: 1999-02-09
Granted: 2001-05-01
Abstract: A non-volatile random access memory (NVRAM) cell and method of fabrication thereof. Pairs of NVRAM cells, each including three FETs stacked in a NAND-like structure are formed vertically in silicon pillars. Source devices at the bottom of the pillar selectively provide ground to one of the cells. A floating gate extends upward from the source device's gate line. A control gate plate extending between adjacent pillars selectively provides a programming voltage to the control gate. Both the source gate and the control gate are capacitively coupled through silicon rich oxide to the floating gate. Polysilicon plugs between silicon pillars are word line gates for cells in adjacent pillars. A diffusion at the top of each pillar is a bit line contact for both cells at the pillar. Each pair of cells on a pillar are on a common bit line and a common word line. The word line, control gate and source gate line select individual cells in the pair.
Patent TW-376435-B (TW)
Title: Air conditioner
Inventor: TAKAMI HIROYUKI
IPC: F24F1/02
Filed: 1999-02-10
Granted: 1999-12-11
Abstract: To inhibit the adhesion of vapor on the indoor walls in an air conditioner attached with a humidifying device. The air conditioner 10 comprises: a refrigeration cycle 2 consisting of a compressor 21, a condenser 22 and an evaporator 24; a blower 4 sucking in air and blowing out air through the evaporator 24; a water supply tank 6; vapor generation means 5 for generating vapor from the water stored in the water supply tank 6; a body enclosure 1 housing the refrigeration cycle 2, the blower 4 and the vapor generation means 5 and having a vapor blowing out opening 15 for blowing out the generated vapor, a sucking opening 20 for sucking in air, and an air blowing out opening 17 for blowing out air passed through the evaporator 24; wherein the vapor blowing out opening 15 is formed above 11b the front end of the body enclosure 1.
Patent TW-469405-B (TW)
Title: Workflow synchronization
Inventor: NOTANI RANJIT N
IPC: G06Q10/00
Filed: 1999-06-04
Granted: 2001-12-21
Abstract: A computer implemented method for workflow synchronization is provided. The first step comprises initializing the execution of a plurality of workflows. The next step is providing synchronization logic in at least one of the plurality of workflows. In the third step the execution of a workflow is paused until the synchronization logic is complete. In the final step the execution of the plurality of workflows continues.
Patent TW-411413-B (TW)
Title: Electronic instrument and semiconductor memory device
Inventor: TAGUCHI MASAO
IPC: G11C11/4076
Filed: 1999-06-24
Granted: 2000-11-11
Abstract: An electronic instrument includes a memory device, clock lines through which complementary clock signals are transmitted to be used for synchronization of a data output operation and a data input operation for the memory device, and strobe signal lines through which a first output strobe signal, a second output strobe signal, a firsst input strobe signal and a second input strobe signal are transmitted to be used to settle output data from the memory device in the data output operation and to settle input data supplied to the memory device, the first and second output strobe signals being in complementary relation to each other, the first and second input strobe signals being in complementary relation to each other.
Patent TW-427942-B (TW)
Title: Method of integrally producing foamed body of shoes
Inventor: CHI CHENG-HSIAN
IPC: B29C39/00
Filed: 1999-07-16
Granted: 2001-04-01
Abstract: The present invention relates to a method of integrally producing a foamed body of shoes. The method comprises sewing a decorative plate layer on the periphery frame of a shoe upper; integrally mounting the shoe upper on a shoe tree of a shoe presser; inserting a foamed insole at a high temperature status at the bottom part of the shoe upper; mounting a bigsole on the bottom mold seat of an upper-and-lower corresponding mold so that the shoe upper, the foamed insole at a high temperature and the bigsole can be shaped integrally by the pressing of the mold, in which the wall surface of the cavity of the side mold seats on the two sides of the bottom mold seat is formed with an embossment pattern so that the periphery of the foamed insole at a high temperature status and the decorative plate layer wrapped thereby can be embossed with a specific pattern during the integrally pressing step; and cooling the mold and removing the foamed shoe body from the mold.
Patent TW-476780-B (TW)
Title: Silicon dioxide containing coating
Inventor: CHANDRA GRISH
IPC: B05D7/24
Filed: 1999-08-05
Granted: 2002-02-21
Abstract: A silicon dioxide containing coating is disclosed herein which is useful for multi-layer hermetic coatings, interlayer dielectric coatings and flat panel display coatings. This coating is formed by first applying a coating composition comprising polysilastyrene to a substrate and then by heating said polysilastyrene in an oxidizing atmosphere.
Patent TW-446877-B (TW)
Title: Non-uniform memory access (NUMA) data processing system that speculatively issues requests on a node interconnect
Inventor: CARPENTER GARY DALE
IPC: G06F12/08
Filed: 1999-08-30
Granted: 2001-07-21
Abstract: A non-uniform memory access (NUMA) data processing system includes a node interconnect to which at least a first processing node and a second processing node are coupled. The first and the second processing nodes each include a local interconnect, a processor coupled to the local interconnect, a system memory coupled to the local interconnect, and a node controller interposed between the local interconnect and the node interconnect. In order to reduce communication latency, the node controller of the first processing node speculatively transmits request transactions received from the local interconnect of the first processing node to the second processing node via the node interconnect. In one embodiment, the node controller of the first processing node subsequently transmits a status signal to the node controller of the second processing node in order to indicate how the request transaction should be processed at the second processing node.
Patent TW-429401-B (TW)
Title: Back pressure system of semiconductor manufacturing apparatus
Inventor: JANG JIAN-SHIUNG
IPC: H01L21/00
Filed: 1999-08-31
Granted: 2001-04-11
Abstract: A back pressure system of semiconductor manufacturing apparatus comprises a pressure switch, a delay circuit and a decoder installed on the circuit of a conventional back pressure system. Therefore, when a terminal valve in a back pressure system of semiconductor manufacturing apparatus is damaged, the situation can be known immediately and an alarm signal is sent to notify a work personnel that the helium flow of this system is in an abnormal state. The production of this machine is immediately terminated, thereby avoiding the production of a lot of bad products.
Patent TW-500781-B (TW)
Title: Curable coating compositions
Inventor: FLETCHER IAN DAVID
IPC: C09D163/00
Filed: 1999-11-09
Granted: 2002-09-01
Abstract: The invention relates to an ambient temperature curable coating composition comprising a film-forming epoxy resin, a curing agent for the epoxy resin that contains an average of at least two thiol groups per molecule and a catalyst for the curing reaction, wherein the composition contains a fugitive retarder for the curing reaction which inhibits curing of the composition in the bulk but which leaves the curable composition when the composition is applied as a coating on a substrate. Further, the invention relates to the use of these coating compositions, in particular to their use as primer coatings for steel in shipbuilding or structural steel used in buildings, bridges or oil rigs.
Patent TW-579405-B (TW)
Title: Wet-creped, imprinted paper web and producing method thereof
Inventor: WOLKOWICZ RICHARD IGNATIUS
IPC: D21F11/00
Filed: 2000-01-21
Granted: 2004-03-11
Abstract: A low density, wet-creped paper web having improved levels of tensile strength, tear strength and thickness. The web has a distribution of densified regions corresponding to the distribution of knuckles on a drying fabric. Generally speaking, these densified regions should be distributed so that the distance between at least a portion of the densified regions is less than or equal to the length of the longest fiber in the furnish (e.g., pulp fibers and/or other fibers) used to make the paper web. The wet-creped paper web is removed from a Yankee dryer at a dryness of between 45 and 65% and then passed to the after dryer section of a paper machine. An after dryer fabric is pressed into the wet base web to transfer the topography of the after dryer fabric to the web and to generate improved tensile strength, tear strength and thickness. The wet base web is pressed into the drying fabric utilizing a nip before the web is 70% dry. Once the wet base web initially contacts the drying fabric, it should remain on the drying fabric without any change in the registration between the wet base web and the drying fabric until the base web is at least about 80% dry.
Patent TW-441042-B (TW)
Title: A GaAs/GaAlInP heterostructure field effect transistor and the method of fabricating the same
Inventor: SHIU WEI-JOU
IPC: H01L21/8252
Filed: 2000-01-06
Granted: 2001-06-16
Abstract: A GaAs/GaAlInP heterostructure field effect transistor formed on a misoriented GaAs substrate, including: a GaAs buffer layer formed on the misoriented GaAs substrate with a recessed part on both sides and forming a convex part; a GaAlInP layer formed on the convex part of the GaAs buffer layer and having a recess slot; a GaAs covering layer formed on the GaAlInP layer and forming an opening, the opening of the GaAs covering layer is connected with the recessed slot of the GaAlInP layer; a source and drain formed on the GaAs buffer layer and forming an Ohmic contact with the GaAs buffer layer and protruding out of the GaAs covering layer; a gate formed on the GaAlInP recessed slot and forming a Schottky contact with the GaAlInP layer and protruding out of the GaAs covering layer. The field effect transistor of the present invention increases the breakdown voltage and inhibits the parallel conduction effect, and has large Schottky barrier, large energy gap, so that the present invention can achieve the goal of single power operation.
Patent TW-459435-B (TW)
Title: Structure having a stator teethed portion with closed loop embedded device
Inventor: SHIU JIUN-FU
IPC: H02K15/00
Filed: 2000-02-02
Granted: 2001-10-11
Abstract: The present invention relates to a structure having a stator teethed portion with closed loop embedded device, which comprises: a loop-shape flux conductor, wherein the outer periphery or inner periphery thereof has a plurality of embedding slot arranged in radiative manner; and a plurality of arc T-shape flux conductors, each having an arc T-shape cross section. An excitation portion is provided to be slipped into an insulation line slot seat of the excitation coil. All three terminals of the arc T-shape flux conductor have embedded terminals, wherein the root terminal is corresponding to and clipped, snapped or embedded to the peripheral embedding slot of the loop-shaped flux conductor. The left and right terminals of the arc T-shaped flux conductor are formed with corresponding concave and convex embedded terminal for clipped or buckled connection. Each arc T-shaped flux conductor is corresponding to and clipped to or embedded to the embedded terminal between the adjacent left and right arc T-shaped flux conductor, so as to form an embedded portion. Further with the embedded combination of the root terminal of the arc T-shaped magnetic body and the embedding slot of the periphery of the loop-shaped magnetic body, the three embedded terminals form a triangle positioning relation for mutually clipping or buckling to support, and integrally form a closed loop embedded device which is not easy to shift, thereby the assembled mechanical strength of motor stator is increased.
Patent TW-I225950-B (TW)
Title: Virtual line frame method of light guiding plate
Inventor: CHEN SHIOU-WEN
IPC: G02F1/13
Filed: 2000-02-24
Granted: 2005-01-01
Abstract: A virtual line frame method of light guiding plate is provided to use a virtual quadrangle line frame to divide the reflection plane of the light guiding plate to proper small quadrangles and then put same shape and size patterns on the center of each small quadrangle. Each small quadrangle is located at the same position with connection side ends of its adjacent eight small quadrangles. Therefore, the illumination and uniformity of the light guiding plate can be increased by the pattern shape and size and the specification of the small quadrangle.
Patent TW-463408-B (TW)
Title: Cathode active material for lithium electrochemical cells
Inventor: SEUNG DO-YOUNG
IPC: C01G45/00
Filed: 2000-03-01
Granted: 2001-11-11
Abstract: The invention disclosed relates to a novel single-phase compound of molecular formula LixCryMn2-yO4+z, wherein 2.2 < x < 4, 0 < y < 2 and z ≥ 0. This compound may be used as the active cathode material in secondary lithium ion cells. Secondary lithium ion cells including such cathodes are also described.
Patent TW-529958-B (TW)
Title: Oriented biopolymeric membrane
Inventor: LI SHU-TUNG
IPC: A61L31/04
Filed: 2000-04-13
Granted: 2003-05-01
Abstract: A sheet membrane containing a layer of oriented biopolymeric fibers. The membrane has a thickness of 0.1 mm to 3.0 mm, a density of 0.1 g/cm<3> to 1.2 g/cm<3>, a hydrothermal shrinkage temperature of 50 DEG C to 85 DEG C, a suture pullout strength of 0.1 kg to 5 kg, a tensile strength of 10 kg/cm<2> to 150 kg/cm<2>, and permeability to molecules having molecular weights of 200 to 300,000 daltons.
Patent TW-440939-B (TW)
Title: Manufacturing method using inclined implantation to define channels
Inventor: HUANG DIAU-YUAN
IPC: H01L21/28
Filed: 2000-04-07
Granted: 2001-06-16
Abstract: There is provided a manufacturing method using inclined implantation to define channels, which is able to obtain the desired channel length by adjusting the thickness of the sub-gate stack and the inclined angle of ion implantation. Furthermore, it is able to obtain a channel with a smaller dimension by adjusting the width of the liner to decrease the length of the channel.
Patent TW-452504-B (TW)
Title: Shower head with water purification function
Inventor: TAKAGI TOSHIO
IPC: B05B15/00
Filed: 2000-05-10
Granted: 2001-09-01
Abstract: A shower head with water purification function capable of easing restrictions on a shape, structure, and storage capacity of a water quality switching valve and also providing a well-balanced shape and structure for easier handling, wherein a water quality purification cartridge is incorporated in a holding part, a purified water flow path passing through the water quality purification cartridge and a raw water flow path not passing through the cartridge are formed by the incorporation of that cartridge, a flow path switching valve which switches a flow path between the purified water flow path and the raw water flow path is incorporated in a head part, a straight delivery port is also provided at a place where the shower delivery port is formed, a delivery flow switching valve which switches a delivery flow between a delivery flow from the straight delivery port and a delivery flow from the shower delivery port is incorporated, and the flow path switching valve and the delivery flow switching valve are formed controllably from the outside of the head part independently of each other.
Patent TW-465263-B (TW)
Title: Substrate with at least two metallic polymer protrusions used for the weld connection containing a wiring
Inventor: VAN PUYMBROECK JOZEF
IPC: H01L21/60
Filed: 2000-05-17
Granted: 2001-11-21
Abstract: A substrate (S) with at least two metallic polymer protrusions (PS), especially a polymer stud Grid Array. It is so formed that the polymer bump (PS) contains at least a step (ST) and at least an elevation (E). The geometry of the weld protrusion (PS) assure reliable weld connection containing a wiring (V) and a reproducible layer thickness of solder (L).
Patent TW-447111-B (TW)
Title: Array-type SOI diode layout
Inventor: CHEN SHIAU-SHIAN
IPC: H01L27/00
Filed: 2000-06-30
Granted: 2001-07-21
Abstract: An array-type SOI diode layout which comprises a substrate and the polysilicon structure. The array-like polysilicon structure is configured on the substrate and separates the substrate into several array-like ion doped area; and, forming several first conductive ion doped areas and several second conductive ion doped areas in crossed configuration in these ion doped areas. The present invention can not only increase the effective conduction area within the existed area but also improve the problem of SOI heat dissipation and device characteristics so as to obtain better device performance.
Patent TW-448314-B (TW)
Title: Wavelength selectable fiber laser system
Inventor: CONRADI JAN
IPC: H04B10/294
Filed: 2000-07-04
Granted: 2001-08-01
Abstract: A fiber laser system including multiple fiber lasers fabricated to emit at respective different wavelengths when optically pumped by radiation at a pump wavelength. A pump laser emits the pump radiation and pumps one or more of the fiber lasers. The outputs of the fiber lasers are recombined onto a transmission fiber, preferably for use in a wavelength-division multiplexing (WDM) telecommunication system one of the fiber lasers. A second switch controlled in correspondence to the first switch or a passive combiner, preferably a wavelength-division multiplexer, directs the output of the lasing fiber to an optical output path. In another embodiment, the one pump laser simultaneously pumps all the fiber lasers. One or more pump laser may be placed in parallel, and their outputs are combined. The parallel pump lasers may either be individually activated for redundancy or simultaneously operated for higher power.
Patent TW-504778-B (TW)
Title: Semiconductor device and the manufacturing method thereof
Inventor: AKIYAMA YUKIJI
IPC: H01L21/60
Filed: 2000-07-19
Granted: 2002-10-01
Abstract: The present invention realizes the bump electrode in the fan-in/out type of semiconductor device to be firmly configured and supported outside the chip for improving the reflow durability, which comprises: a porous elastomer 3, which is configured on the main surface 1a of the semiconductor chip 1, and formed as exposing the opening 3c of the electrode pad 1b on the semiconductor chip 1; and, the conductive wires 4c, extending from the main surface 1a of the semiconductor chip 1 to outside of the chip, and electrically connected with the electrode pad 1b at one end and electrically connected with the bump electrode 2 at the other end; and, a frame-type reinforcing member 6, supported by a tape-like substrate 4 formed exposing the opening 4e of the electrode pad 1b and reinforcing the bump electrode 2 configured outside the semiconductor chip 1; and, the sealing portion 5 for sealing the electrode pad 1b of the semiconductor chip 1 and the wiring 4c; in which, the reinforcing effect by the reinforcing member 6 is supported by the tape-like substrate 4 of the bump electrode 2 configured outside the semiconductor chip 1.
Patent TW-460345-B (TW)
Title: Joining device by ultrasonic vibration
Inventor: SATO SHIGERU
IPC: B23K20/10
Filed: 2000-07-31
Granted: 2001-10-21
Abstract: A joining device by ultrasonic vibration consists of: conical-shaped horn body. It can be achieved the suitable joint on this horn body at its central maximum vibration amplitude point outwardly protruding on this body's upper and lower joining parts, and, apart from the same distances from the above-mentioned joining parts, at their two minimum vibration points protruding from the bent-shaped bearing parts on the front and rear faces of this horn body.
Patent TW-I223587-B (TW)
Title: Composition and method for controlling biological growth using stabilized sodium hypobromite in synergistic combinations
Inventor: COOPER ANDREW J
IPC: A01N37/08
Filed: 2000-08-11
Granted: 2004-11-11
Abstract: A synergistic composition and method for controlling biological growth in industrial fluids are disclosed, wherein the composition comprises stabilized sodium hypobromite and at least one compound selected from the group consisting of coco alkyldimethylamine oxide, n-coco alkyltrimethylenediamine, tetra-alkyl phosphonium chloride, 7-oxabicyclo[2.2.1]heptane-2,3-dicarboxylic acid and 4,5-dichloro-2-n-octyl-4-isothiazoline-3-one.