baber/WOPTO huggingface dataset:
Patent JP-2001073689-A (JP)
Title: Excavating construction method and dust reducing device used for the method
Inventor: NISHIMURA AKIRA
IPC: E21B21/00
Filed: 1999-09-07
Abstract: PROBLEM TO BE SOLVED: To improve a working environment and reduce a cost by suppressing the occurrence of dust at excavating positions and in transport process, and prevent an adhesion of soil so as to prevent an eccentric wear of a cutter by smoothly taking in fractures and increasing a cooling effect. SOLUTION: An excavation is performed while air bubbles are supplied to the excavating members such as a drill and a cutter of an excavating device and/or around these excavating members. The air bubbles are generated finely, for example, like shaving cream by blowing compressed air into a solution containing surface active agent. A dust reducing device comprises mixing means 2 mixing surface active agent with water, air bubble generating means 3 producing air bubbles by feeding mixed solution and compressed air by the mixing means 2, and a feed path 9 feeding the air bubbles generated by the air bubble generating means 3 to and/or around the excavating members of the excavating device.
Patent JP-H0194662-A (JP)
Title: Manufacture of mis type semiconductor using gallium arsenide
Inventor: FUJIEDA SHINJI
IPC: H01L21/318
Filed: 1987-10-06
Abstract: PURPOSE:To allow an easy treatment of excessively coated As on a GaAs surface with high reproducibility and thus to obtain excellent MIS characteristics by thermally treating Ga and As in a high purity hydrogen ambient or high vacuum ambient, and then coating a nonoxide insulating film thereupon after thermally treating them in an As ambient or epitaxially growing them at respective temperatures. CONSTITUTION:A gallium arsenide is thermally treated at a temperature not lower than 550 deg.C in an As ambient or it is epitaxially grown before forming an insulating film thereupon. Then raising the temperature from 500-550 deg.C, it is subjected to a thermal treatment in a high purity hydrogen or high vacuum ambient where the As ambient has been removed. After this, a nonoxide insulating film is coated thereupon at not more than 450 deg.C. For example, a chemically etched n-type GaAs substrate is thermally treated in a H2+AsH3 current for 20 minutes while raising the temperature to 650 deg.C. Then by lowering the temperature to 500 deg.C, making a thermal treatment in a H2 gas current for 30 minutes, and then by supplying NsH4 and TMA at 400 deg.C, an AIN film which is 900Angstrom thick is obtained in 20 minutes. A MIS structured diode is prepared by evaporation depositing Al on the sample obtained by said process.
Patent JP-S63107071-A (JP)
Title: Manufacture of field effect transistor
Inventor: MATSUNOSHITA MAKOTO
IPC: H01L29/812
Filed: 1986-10-23
Abstract: PURPOSE:To decrease a feedback capacity without increasing a source resistance, and increase the withstand voltage of a drain, by a method wherein a insulative film is arranged on one side of the center portion of a gate on a substrate surface, the insulative film except on the sidewall of the gate is eliminated after a second insulative film is formed on the whole surface, and a contact layer region is formed by implanting an ion beam. CONSTITUTION:After a first insulative film is formed on one side of the center portion of a gate 13 on the surface of a substrate 11 on which the gate 13 is formed, a second insulative film is formed on the whole surface, and the insulative film except the insulative film on the sidewall of the gate 13 is eliminated by etching. Then a contact layer region 19 is formed by implanting an ion beam applying sidewall insulative films 16 and 17 of the gate 13 and both sides of it to masks. For example, after an active layer region 12 and the gate 13 are formed on a GaAs substrate 11, the unsymmetrical sidewalls 16 and 17 are formed in the above-mentioned manner, and the contact layer region 19 is formed by implanting silicon ion. Then, after each process of eliminating the sidewalls 16 and 17, annealing, and forming ohmic electrodes, an FET is formed wherein a source electrode 24 is formed on the side where an contact layer 21 is near to the gate 13 and a drain electrode 25 is formed in the side where the contact layer 21 is distant from the gate 13.
Patent JP-H0248879-A (JP)
Title: Channel display device in television reservation system
Inventor: HASHIMOTO KAZUO
IPC: H04N5/445
Filed: 1988-10-07
Abstract: PURPOSE:To call attention of a viewer by providing a channel display means on a television set and causing an alarm for a prescribed time independently whether a channel display is changed or not at reserved time arrives during the display. CONSTITUTION:A program of a VTR 80 is reserved manually and the input is displayed on a display section 81 and confirmed. The displayed data gives an interrupt signal by depressing a reservation button and the data is read and stored in a personal computer(PC) 82 via an interface section 85. When the reservation input is finished, the reservation data in the PC 82 is transferred to a disk 83 and stored. Then the present time in the PC 82 and the video recording start time of each program number stored in the memory are checked. When they are coincident, the relevant channel data is read from the memory and displayed on a display device 87 via an interface 86. Succeedingly, a speaker 84 is sounded in the PC 82 for several seconds to urge the viewer and when the reserved program is desired to be recorded, the video recording is manually switched.
Patent JP-H06104283-A (JP)
Title: Thin film transistor
Inventor: NAKADA YUKIHIKO
IPC: H01L29/786
Filed: 1992-09-22
Abstract: PURPOSE:To provide a thin film transistor able to improve the numerical aperture in case a higher ON-current and a lower OFF-current are available while being applied to a liquid crystal display device. CONSTITUTION:A gate electrode 12 is formed on one side while a semiconductor thin film 15, a source electrode 18 and a drain electrode 19 are formed on the other side having the insulating films 13, 14 between. The semiconductor thin film 15 consists of silicon carbide containing a fine crystal phase formed by performing a film formation process forming a silicon carbide semiconductor film by plasma decomposition of gaseous raw material containing silicon and carbon and a hydrogen plasma treatment process subjecting this semiconductor film to a treatment one time or two times or more.
Patent JP-H06104089-A (JP)
Title: Thin film light emitting element
Inventor: MARUTA YUKIHIRO
IPC: H05B33/22
Filed: 1992-09-24
Abstract: PURPOSE:To provide a thin film light emitting element excellent in characteristic by using a shielding layer in which Na is never diffused in high temperature thermal treatment. CONSTITUTION:On a transparent glass base 1 are successively laminated a shielding layer 9, a transparent electrode 2 which is a first electrode, a first insulating layer 3, a light emitting layer 4, a second insulating layer 5, and an Al electrode 6 as a second electrode. The shielding layer 9 is formed of either one of tantalum oxide Ta2O5 layer; tantalum oxide Ta2O5 layer and silica SiO2 layer; and Ta2O5 layer and alumina Al2O3 layer, and the first insulating layer 3 is formed of Al2O3 layer. Thus, sodium Na is never diffused onto the transparent electrode 2 even at a high thermal treatment temperature, and a thin film light emitting element excellent in characteristic can be provided.
Patent JP-H04131847-A (JP)
Title: Heat developing device with cooling mechanism
Inventor: MIYAMOTO FUJIO
IPC: G03D9/00
Filed: 1990-09-21
Abstract: PURPOSE:To contrive the improvement of the reliability, the high functionality and the reduction in cost by blasting air with a blasting means through an opening to the inside of a heat-developing device when a shutter is opened and an opening is formed at a part of an enclosure. CONSTITUTION:Shutters 7a, 7b provided on an air blasting port 4 and an exhausting port 9 are covered with a heat insulating material and closed for heat insulation at the time of a development. When the development is finished and the cooling is carried out, the cooling fan 5 rotates to blast air through the air blasting port 4 to the inside of the developing device and a warm wind runs away from the exhausting port 9 to the outside. When the cooling is completed, the shutters 7a, 7b are again closed to prevent the infiltration of dust into the heat developing device. Hence the substantial life of a belt is prolonged and the rapid repairing work is carried out when the abnormality is generated at the inside of the developing device and the device cost is suppressed, as well because the constitution is simple.
Patent JP-H08113794-A (JP)
Title: Magnetic fluid composition
Inventor: SHIMIZU KAZUYA
IPC: C10N20/06
Filed: 1994-10-19
Abstract: PURPOSE: To obtain a magnetic fluid composition having excellent stability and fluidity over a long period under high temperature and humidity conditions and useful for magnetic dampers by blending a oil-based magnetic fluid with a sulfonic acid-based surfactant and/or animal-based wax. CONSTITUTION: This composition contains (A) a magnetic fluid obtained by coating magnetic fine particles (e.g. magnetite or Mn-Zn ferrite) with a fatty acid (e.g. oleic acid or linolic acid) and dispering the fine particles into an oil-based solvent (e.g. n-heptane, banzene or diethyl ether) and (B) a sulfonate- based surfactant (preferably a 20-40C alkylarylsulfonate) and/or (C) animal-based wax (especially preferably lanolin). Furthermore, total amounts of the components B ans C added are <=30wt.%, preferably >=0.5wt.%, especially preferably 1-10wt.% based on total composition.
Patent JP-H0788744-A (JP)
Title: Determining method for machining order
Inventor: MIZUKAMI HIROTAKA
IPC: B23Q15/00
Filed: 1993-09-17
Abstract: PURPOSE:To provide optimum numerical control information for simultaneous machining even without repeating complicated calculation by determining combination of machining processes where a machining time is the shortest for the simultaneous machining by using at least two tool rests. CONSTITUTION:A machining process serving as a key of simultaneous machining is set, to extract a machining process having a dividable machining region. The dividable machining region of this extracted machining process is divided to partly serve as the key of the machining process, and its machining time, so as to be most adjacent, is divided by a simultaneous machining order producing part 4, to simultaneously machine partly the machining process serving as the key and the divided machining region. Based on the optimum 2-tool rest simultaneous machining order thus determined from a single machining process data, numerical control information for performing optimum simultaneous machining is created by a numerical control information creating part 7.
Patent JP-H0994703-A (JP)
Title: Bar feeder
Inventor: YAMAGUCHI MITSUYOSHI
IPC: B23B13/02
Filed: 1995-09-29
Abstract: PROBLEM TO BE SOLVED: To correctly feed a bar in a bar feeder. SOLUTION: This bar feeder is constituted so that a pushing rod can be forwarded or retreated along the feeding direction of a bar, by arranging pushing rod 2 for a bar 1 slidably along the feeding direction of the bar, and by arranging a guiding member 3, having a spiral groove 3a, rotatably in parallel to the pushing rod to engage it with the spiral groove of the guiding member via an engaging member 4 to rotate the guiding member.
Patent JP-S63107111-A (JP)
Title: Semiconductor manufacturing apparatus using vapor growth method
Inventor: KAMEI HIDENORI
IPC: H01L21/205
Filed: 1986-10-24
Abstract: PURPOSE:To suppress the fluctuation of the flow ratio of raw material gases, which are supplied from bubbler containers, by containing raw materials in a plurality of the bubbler containers, and simultaneously controlling the temperatures of a plurality of the bubbler containers with the same temperature control means. CONSTITUTION:A semiconductor substrate is put in a growing furnace 11. organic metal compounds are accommodated in containers 20a and 20b of a bubbler 20 and a bubbler 15. Thereafter, carrier gases such as H2 are made to flow into said organic metal compounds through raw-material feeding pipes 2a, 3a and 4a, and the organic metal compounds are vaporized. The vapors are supplied into the growing furnace 11 through three-way valves 8, 9 and 10. The temperatures of the containers 20a and 20b of the bubbler 20, which supply the raw material gases, are simultaneously controlled with a single temperature regulating device 16. Therefore, even if the temperature of the containers 20a and 20b of the bubbler 20 are fluctuated with respect to a preset temperature, the fluctuation of the flow ratio of the raw material gases, which are supplied from the containers 20a and 20b of the bubbler 20, is suppressed to the minimum degree.
Patent JP-H0894343-A (JP)
Title: Ultrasonic measuring method and device for plate thickness of steel plate with covering film
Inventor: NAKANO MORIO
IPC: G01N29/04
Filed: 1994-09-26
Abstract: PURPOSE: To enable a reflection wave to be recognized easily by deleting the reflection wave at the last row from a waveform row which a vibrator for transmission has received and to accurately detect a steel plate thickness regardless of the presence of a paint film by using a vibrator for reception of a probe for controlling a gate for detecting the reflection wave on the bottom surface of the steel plate and for detecting the reflection wave on the surface of the steel plate. CONSTITUTION: A double-vibrator-type probe 3 is mounted to an object to be measured, ultrasonic pulses are transmitted from a pulse generator 9 to the feeler 3, reflection waves from the surface of a covering 2 and the front and rear surfaces of a steel plate 1 are received by both vibrators 4 and 5 of the probe 3, and the reflection waves are inputted to a reflection wave amplifier for receiving vibrator at a T side 10 and an R side 11 and are amplified. Both amplified signals are transmitted to a gate control circuit 12 and a steel plate bottom surface reflection wave B which has already been detected is inputted to a counter 15 from the amplifier 11 measuring time.  The circuit 12 uses the signal of the reflection wave B as a trigger, deletes the reflection wave B from a waveform row inputted from the amplifier 10 and detects 13 the reflection wave L on the surface of the steel plate. The detected reflection wave signals L and 13 are inputted to a CPU16 and a steel plate thickness C is calculated and displayed 17.
Patent JP-H0997594-A (JP)
Title: High-pressure discharge lamp, lamp device, lighting device, projector, and liquid crystal projector
Inventor: TANAKA ICHIROU
IPC: H01J61/20
Filed: 1995-09-29
Abstract: PROBLEM TO BE SOLVED: To provide a long-life high-pressure discharge lamp capable of improving the luminance build-up characteristic in starting while ensuring a required strength of a bulb. SOLUTION: This high-pressure discharge lamp has a bulb 2 in which the tube wall load having a discharge medium sealed therein is 30W/cm<2> or more, and a pair of electrodes 3a, 3b arranged within the bulb 2 opposite to each other to generate a discharge. When the thickness of the bulb 2 is d (mm), the lamp power is W (W), the lamp current IL (A), the lamp starting current is 10 (A), the following expression [1] is satisfied.
Patent JP-H11162543-A (JP)
Title: Mesh fabric interconnecting body
Inventor: STRANGE ANDREW H
IPC: H05K1/00
Filed: 1998-09-08
Abstract: PROBLEM TO BE SOLVED: To provide a mesh fabric interconnecting body to bring about the electric interconnection. SOLUTION: This electric interconnecting body is composed of a mesh textile, and in this mesh textile, an array of parallel conductive wires 20 is held mutually separatedly by an array of nonconductive strands in the direction for crossing it, and meshes are enclosed, that is, put in an elastic matrix 40. Since the conductive wires 20 are set to a fine pitch, larger electric current capacity and lower and stabler resistance are brought about. Since a large number of wires 20 contact with respective contact pads by this constitution, larger electric current capacity and corresponding lower resistance are brought about. A finer pitch brings about larger overlapping of contact points.
Patent JP-H04131932-A (JP)
Title: High speed function call system
Inventor: KUNIHIRO YUKO
IPC: G06F9/45
Filed: 1990-09-25
Abstract: PURPOSE:To attain a function call system which utilizes the high speed performance by referring to all local variables and real argument areas included in a function with the offset applied from a stack pointer and securing dynamically an area in a stack if the function requires no dynamic extension of the stack area in an execution state. CONSTITUTION:If a function does not require the dynamic expansion of a stack area in an execution state, a stack pointer SP is expanded at the entrance of the function by an extent equal to the size of a function frame decided in a compiling state (1). Then all local variables and real argument areas included in the function are referred to with the offset applied from the SP (2), and the SP is set back at the exit of the function by an extent equal to the increment set at the entrance (3). That is, the reference is also possible to the local variables with the offset applied from the SP and it is not required to set the SP. Thus the least and necessary overhead is limited only to the function where the SP changes in an execution state. As a result, the function of a programming language can be called at a high speed for securing dynamically an area on a stack.
Patent JP-H0558379-A (JP)
Title: Bicycle with electric motor
Inventor: YOKOYAMA TATSUJI
IPC: B62M6/55
Filed: 1991-09-05
Abstract: PURPOSE:To reduce the size of the whole of a drive system and to improve pedaling operability by a method wherein a torque detecting mechanism and a transmission system are distributed to both sides of a plane 10 the longitudinal direction of a car body containing a motor shaft by arranging a resultant force shaft on a crank shaft and locating the motor shaft in a manner to cross the crank shaft at right angles. CONSTITUTION:A crank shaft 32 is extended through a case 26 of a power unit 24 and a crank 34 and a pedal 36 are mounted on the two ends of the crank shaft. An electric motor 22 is secured to the case 26, and a motor shaft 22a thereof is arranged to the central part, in the direction of width, of a car body in a state to cross the crank shaft 32 at right angles with the crank shaft 32. After the rotation force of the electric motor 22 is transmitted to a resultant force shaft 56 rotatably held on the crank shaft 32, it is transmitted to a drive shaft 30. Meanwhile, an input inputted from the pedal 36 is transmitted to the resultant force shaft 56 and the drive shaft 30 through the crank shaft 32. In this case, a transmission system containing the drive shaft 30 is arranged on the right of a plane A in the longitudinal direction of a car body, and a torque detecting mechanism 65 of a pedal 36 is arranged on the left of the plane A.
Patent JP-2000076783-A (JP)
Title: Device and method for recording voice and storage medium
Inventor: HORI SAKAE
IPC: H04N5/765
Filed: 1998-08-26
Abstract: PROBLEM TO BE SOLVED: To surely prevent voiceless recording going against a will by prohibiting the recording of a voice signal on a recording medium when the input of the voice signal from an external input terminal is detected to be unabled. SOLUTION: The voice signal inputted from the external input terminal 1 is fed to a level detector 4 and converted to a detection signal according to a signal level by this level detector 4 to be inputted to a control part 5. In the case of an external voice input mode, the control part 5 sends a control signal, 'recording stop (prohibition)' to a recording circuit 3 when inputting of a voiceless level signal from the level detector 4 is continued for a prescribed time or above. Further, the control part 5 sends the control signal to a liquid crystal display part 6 so as to display a prescribed warning mark and a warning message, and sends the control signal to a speaker 7 so as to generate an intermittent warning sound and a warning message sound. Thus, disconnection of a connection cord or forgetting to connect the cord in an external equipment side are coped with.
Patent JP-2000088803-A (JP)
Title: Separating and collecting device for specific gene fragments
Inventor: IRIE TAKASHI
IPC: C12M1/00
Filed: 1998-09-09
Abstract: PROBLEM TO BE SOLVED: To provide a device for separating and collecting gene fragments in a short time with high resolution. SOLUTION: This device is provided with a capillary 10 for separating DNA fragments labeled with phosphors, detecting means 4a, 6a, 6b, 4b, 2 for irradiating the separated DNA fragments with a laser beam 28 to detect fluorescence a transfer tube 14 opposing to an end terminal of the capillary 1, and having the first terminal arranged with a space to migrate the separated DNA fragments to an opening of the first terminal, a means 8 for forming a sheath flow of a buffer solution for conveying the DNA fragments eluted from the capillary 1 to the opening of the first terminal, a collecting means 15 having a collecting container for fractionating and collecting length by length the DNA fragments transfered by the transfer tube 14, and control means 9, 17 for controlling the collecting means 15 based on fluorescence signals.  The length of the tube 14 is 5 cm-15 cm, its inside diameter is 50 μm-100 μm, and flow velocity of the buffer solution flowing inside the transfer tube 14 is 10 mm/sec. Separating and collecting work for specific gene fragments is conducted efficiently thereby.
Patent JP-H02103049-A (JP)
Title: Photoresist composition
Inventor: KOSHIYOU MASAAKI
IPC: G03F7/20
Filed: 1988-10-12
Abstract: PURPOSE:To obtain a photoresist compsn. having high sensitivity and superior transparency in far ultraviolet region and excimer laser region of wavelength by using a combined compsn. of a copolymer of styrene with maleic acid deriv. and a photosensitive material. CONSTITUTION:A photoresist compsn. is constituted of a compsn. consisting of a polymer prepd. by esterifying 5-80% of a carboxylic acid expressed by the general formula I with 1-5C alkyl group and a photosensitive material. In the formula I, R is 1-10C alkyl group or a cycloalkyl group; X is 50-30. The polymer I is prepd. by treating a 1:1 crosslinked polymer obtd. by the radical polymn. of styrene and maleic anhydride, with an alcohol. The polymer has superior transparency in a wavelength region of far ultraviolet rays and excimer laser, having also superior coatability and developability. Moreover, the polymer has appropriate solubility because of its degree of esterification between 5-80%, so the polymer is developable in usual alkali developing soln. Accordingly, a fine resist pattern having high precision is formed easily.