Patent SG-11201907481P-A (SG)
Title: Rf device integrated on an engineered substrate
Inventor: ODNOBLYUDOV VLADIMIR
IPC: C30B29/40
Filed: 2018-02-08
Abstract: SourceDrain 370 Gate-Diel 380 300 Multiple FP Gate 360 Interlayer-Diel 390 FIG. 3A ••.• .. • ... • . ••••••• . ••• . • . • .. .;. .. ... .. . .. ... :: : 2DEG inducing stack 340 Epitaxial Layers 330 Interlayer with embedded metal 320 Core 310 Via 352 RF Substrate 315 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 30 August 2018 (30.08.2018) WIP0 I PCT oimiolo VIII °nolo OH 0111 VIII ioo Imo oimIE (10) International Publication Number WO 2018/156357 Al (51) International Patent Classification: HOlL 21/02 (2006.01) C3OB 29/06 (2006.01) C23C 16/24 (2006.01) C3OB 2 9 / 4 0 (2006.01) C23C 16/34 (2006.01) C3OB 29/68 (2006.01) (21) International Application Number: PCT/US2018/017405 (22) International Filing Date: 08 February 2018 (08.02.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/461,722 21 February 2017 (21.02.2017) US 15/891,205 07 February 2018 (07.02.2018) US (71) Applicant: QROMIS, INC. [US/US]; 2306 Walsh Av- enue, Santa Clara, California 95051 (US). (72) Inventors: ODNOBLYUDOV, Vladimir; c/o Qromis, Inc., 2306 Walsh Avenue, Santa Clara, California 95032 (US). BASCERI, Cem; c/o Qromis, Inc., 2306 Walsh Av- enue, Santa Clara, California 95051 (US). AKTAS, Ozgur; c/o Qromis, Inc., 2306 Walsh Avenue, Santa Clara, Califor- nia 95051 (US). (74) Agent: LIU, Rong et al.; Kilpatrick Townsend & Stock- ton LLP, Mailstop: IP Docketing-22, 1100 Peachtree Street, Suite 2800, Atlanta, Georgia 30309 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, W O 20 18/ 15 6357 Al (54) Title: RF DEVICE INTEGRATED ON AN ENGINEERED SUBSTRATE (57) : A substrate for RF devices includes a polycrystalline ceramic core and an interlayer structure. The interlayer structure includes a first silicon oxide layer coupled to the polycrystalline ceramic core, a polysilicon layer coupled to the first silicon oxide layer, a second silicon oxide layer coupled to the polysilicon layer, a barrier layer coupled to the second silicon oxide layer, a third silicon oxide layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the third silicon oxide layer. [Continued on next page] WO 2018/156357 Al MIDEDIMOMOIDEIREEMOMMEHMEMEnin UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))