Patent SG-11201806838Y-A (SG)
Title: Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
Inventor: PARK JUNGRAE
IPC: H01L21/78
Filed: 2017-01-27
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 08 September 2017 (08.09.2017) WIP0 I PCT IiiimmomiolollmolommomonmomolioommoiliollIE (10) International Publication Number WO 2017/151254 A3 (51) International Patent Classification: H01L 21/78 (2006.01) H01L 21/768 (2006.01) H01L 21/76 (2006.01) H01L 21/3065 (2006.01) H01L 21/268 (2006.01) H01L 21/3213 (2006.01) (21) International Application Number: PCT/US2017/015479 (22) International Filing Date: 27 January 2017 (27.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/060,224 03 March 2016 (03.03.2016) US (71) Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, California 95054 (US). (72) Inventors: PARK, Jungrae; 1710 Triton Court, Santa Clara, California 95050 (US). LEI, Wei-Sheng; 1786 Du- vall Drive, San Jose, California 95130 (US). EATON, Brad; 563 8th Avenue, Menlo Park, California 94025 (US). PAPANU, James S.; 351 Holly Drive, San Rafael, Califor- nia 94903 (US). KUMAR, Ajay; 10457 Manzanita Court, Cupertino, California 95014 (US). (74) Agent: BERNADICOU, Michael A. et al.; BLAKELY SOKOLOFF TAYLOR & ZAFMAN LLP, 1279 Oakmead Parkway, Sunnyvale, California 94085 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, (54) Title: HYBRID WAFER DICING APPROACH USING A SPLIT BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS FIG. I FLOWCHART 100 102 FORM A MASK ABOVE THE SEMICONDUCTOR WAFER 104 PATTERN THE MASK WITH A SPLIT LASER. BEAM LASER SCRIBING PROCESS 4, • i CLEAN THE EXPOSED REGIONS OF THE SEMICONDUCTOR ‘1 106 WAFER WITH A PLASMA PROCESS 108 PLASMA ETCH THE SEMICONDUCTOR WAFER THROUGH GAPS IN THE PATTERNED MASK (57) : Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an ex- ample, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semicon- ductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits. [Continued on next page] WO 2017/151254 A3 111011111111111 010E11 0 III OIEH11111011001I111110 MI 0111111 MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (88) Date of publication of the international search report: 26 July 2018 (26.07.2018)