baber/WOPTO huggingface dataset:
Patent KR-20000073386-A (KR)
Inventor: HER KYUNG
IPC: F24D3/12
Filed: 1999-05-10
Abstract: PURPOSE: A built-up type hot floor panel is provided to achieve a high quality and improved heat efficiency. CONSTITUTION: A styrofoam panel(10) has at an upper surface thereof a groove(12) for piping formed in a checker figure for burial of a radiating pipe, a strength reinforcing hole(11) formed regularly at each of the squares formed by the groove for piping, and an assembly hole(13) formed at a side of the styrofoam panel into which a small-sized plastic pipe is to be inserted, so that the panels are assembled to each other in accordance with a construction area. The groove for piping has an internal sectional surface shaped as a semi-circular arc so as to allow the radiating pipe to be easily loaded into the groove. Since the styrofoam panel is made of a material that is not easily adhered to a base body, an adhesive net(20) made of vinyl chloride resin is arranged between the panel and base body for a firm adhesion of the panel.
Patent KR-19990068739-A (KR)
Title: 남성용건강팬티
IPC: A41B9/02
Filed: 1999-06-16
Abstract: 본 발명은 삼각형상으로 된 남성용 건강팬티에 관한 것으로, 팬티(1)의 내부 즉 성기와 접촉되는 부분에 띠형상의 격리부재(2)를 형성하여 팬티 착용시 성기와 고환이 분리되도록 하므로서 건강에 유익하도록 하고, 또한, 팬티(1)의 다리끼움부(3)의 허벅지와 접촉되는 부분에 구슬 형상의 지압부재(4)를 설치하여 착용자가 앉았을 때, 허벅지의 지압이 이루어져 전립선염의 예방을 꾀할 수 있도록 한 것이다.
Patent KR-20010003663-A (KR)
Inventor: JU MUN SIK
IPC: H01L21/336
Filed: 1999-06-24
Abstract: PURPOSE: A gate electrode forming method of a semiconductor device is to prevent titanium atoms from flowing into a gate oxide film in forming a gate electrode having a titanium silicide film. CONSTITUTION: A method of forming a gate electrode of a semiconductor device comprises the steps of: forming a gate oxide film(12) on an upper portion of a semiconductor substrate(10) with a NMOS region and a PMOS region defined thereon; implanting a N-type impurity into an upper portion of a silicon film corresponding to the NMOS region, and implanting a P-type impurity into the upper portion of the silicon film corresponding to the PMOS region; annealing the silicon film, and forming a polysilicon film(130); and depositing a titanium silicide film(17) on the polysilicon film. The step of forming the polysilicon film comprises rising the temperature of a chamber where an annealing is progressed therein up to the temperature of 850-1050 deg. C, and then falling the temperature of the chamber up to the normal temperature.
Patent KR-20000006493-A (KR)
Inventor: YOSIDA HIROYUKI
IPC: H01L21/8242
Filed: 1999-06-26
Abstract: PURPOSE: A relaxed layout structure of DRAM storage node is provided to easily achieve a fabrication of memory cell by making spaced distance between storage node and storage node contact. CONSTITUTION: The memory cell structure(10) comprises a plurality of bit lines(12), a plurality of word lines(14) crossing the bit lines, a plurality of storage nodes(20) and a plurality of storage node contacts(18) connected to the storage nodes(20). A bit line contact(16) has a uniform spaced distance on the connected bit lines(12). The storage node(20) and the storage node contact(18) have constant spaced distance along with the connected bit lines(12). The storage node(20) and the storage node contact(18) are off-set to the storage node and the storage node contact arranged along with the adjacent bit lines(12).
Patent KR-20010004891-A (KR)
Inventor: JUNG TAE U
IPC: H01L21/28
Filed: 1999-06-30
Abstract: PURPOSE: A method for fabricating a semiconductor device is provided to improve contact resistance and to prevent leakage current with a relatively simplified cleaning process for contact holes. CONSTITUTION: Word lines(100A,100B,100C) are formed on a semiconductor substrate(10) having a gate oxide(11) thereon. Each word line is composed of a doped polysilicon layer(12) and a metal silicide layer(13). Furthermore, a mask oxide(14) and an insulating spacer(15) cover the top and sidewalls of the word lines, and an interlayer dielectric(16) is formed on overall surfaces. Next, contact holes(17A,17B) are formed in a cell region(C) and a periphery region(P), respectively, each exposing the substrate(10) between adjacent word lines(100A,100B) in the cell region(C) and the metal silicide layer(13) on the word line(100C) in the periphery region(P). After that, polymer produced in the contact holes(17A,17B) is cleaned by using a source of inductively coupled plasma type. The cleaning process is performed at a pressure from 2 to 3 millitorr and at a temperature from 60 to 90 deg.C.
Patent KR-20010009872-A (KR)
Inventor: CHO YONG JIN
IPC: G09G5/02
Filed: 1999-07-14
Abstract: PURPOSE: A SOG(Synchronous signal on Green) correction device of monitor is provided to automatically performs an SOG correction process to view a normal screen though a user directly controls the color of the monitor. CONSTITUTION: The SOG correction device of monitor comprises a video pre-amp(11), a synchronous signal extractor(12), an SOG detector(13) and a controller(14). The video pre-amp(11) pre-amplifies R/G/B video signals. The synchronous signal extractor(12) extracts horizontal and vertical synchronous signals from the G video signals. The SOG detector(13) detects whether a synchronous signal is contained in the G video signal. The controller(14) outputs a clamping signal in accordance with the output of the SOG detector(13) to output a G video signal which a synchronous signal component is removed from and is amplified to a predetermined level.
Patent KR-20010011242-A (KR)
Inventor: PARK SUNG CHAN
IPC: F25D29/00
Filed: 1999-07-27
Abstract: PURPOSE: A low temperature cooling device of a container is provided to fresh keep preserved food for a long time by regularly controlling an indoor temperature regardless of the change of a load using a load switching circuit composed of many photo triac. CONSTITUTION: A low temperature cooling device consists of a sensor unit(100), an analog multiplexer(200), an amplifier(300), an A/V converter(500), a counter(600), an input port(700), a CPU(central processing unit)(800), an LCD(liquid crystal display)(1200) and a load switching circuit unit(1300). The CPU displays the temperature of a low temperature container on a monitor(1000) through a communicating port(900) by controlling a signal from the input port. The LCD feeds the signal from the CPU to an output device(1100) and displays the signal. The load switching circuit is composed of many photo triacs and the low temperature cooling device regularly controls an indoor temperature regardless of the change of a load and keeps fresh preserved food for a long time.
Patent KR-20010019087-A (KR)
Inventor: PARK GYU HUI
IPC: H04M3/22
Filed: 1999-08-25
Abstract: PURPOSE: The apparatus for connecting extension line numbers in a keyphone system is provided to transmit a call request signal to a selected extension number by searching extension numbers registered in a main device of a private branch exchange through a user's telephone for call connection with a requested extension number, after connecting the dialing signal from the external. CONSTITUTION: A control part(110) stores user number information for extension telephones in a storage part(130) and generates a dialing signal to connect a call request signal transferred from external to an extension number selected by a selection part(150). A setup part(120) connected to a keyphone(100) sets up the user number information of extension telephones. The storage part(130) stores the user number information of extension telephones. A display part(140) displays user information in a form corresponding to user number information so that the selection part(150) can select the user number information of extension telephones stored in the storage part(130). The selection part(150) selects an extension phone number corresponding to the call request signal from the user number information of extension telephones stored in the storage part(130). A receiving part(160) receives the call request signal transmitted from the external.
Patent KR-20000028620-A (KR)
Title: Buckle
Inventor: NISIJAWA TOSI
IPC: A44B11/25
Filed: 1999-08-26
Abstract: PURPOSE: A buckle is provided which forms two slits, where a belt-shape body is inserted and effectively prevents the belt-shape body fixedly inserted in the slits from bending. CONSTITUTION: A buckle comprises (i) a first slit(20) and a second slit(21) where a belt-shape body(W) is inserted; and (ii) an engaged portion with the belt-shape body(W), wherein a projecting piece presses down the outside surface(Wd) of a bent in the belt-shape body which is drawn out by being inserted in the second slit(21) and a concave part(22a) is formed to receive the projecting piece in the opposite part of a gatepost of the projecting piece in the engaged portion(22) and a socket edge(22b) in the engaged portion(22) side in the second slit(21) in the side of the concave part(22a) is positioned on a wall part(21a), where the projecting piece is formed to be projected, rather than on the gatepost(23a) of the projecting piece.
Patent KR-20010019359-A (KR)
Inventor: LEE CHOON O
IPC: C04B14/04
Filed: 1999-08-26
Abstract: PURPOSE: A method for manufacturing interior and exterior panels for building is provided to easily install the panels due to their light weight by coating the mixture on the panels after mixing binder with silica, color silica together with mortar, form interior and exterior materials of desirable design by obtaining natural beauty, and form the complete interior and exterior materials by improving durability and fire resistance. CONSTITUTION: The method comprises the processes of mixing 16 kg of white silica, 1 to 1.5 kg of color silica, 700 to 800 g of water and 4 kg of binder based on a coating area of 4 to 5 m2, preparing various panel materials, and coating the mixed material on the various panel materials.
Patent KR-20000047473-A (KR)
Title: Microdevice and structural components of the same
Inventor: KOCHI TETSUNOBU
IPC: G03F1/30
Filed: 1999-08-28
Abstract: PURPOSE: A microdevice is provided to attain an improvement in integration density or device performance, during the semiconductor manufacturing processes where a number of exposure processes are repeated. CONSTITUTION: A device having a substrate and a pattern structure formed on the substrate includes a multiple exposure process having a step for photoprinting a fine stripe pattern on the substrate and a step for photoprinting a predetermined mask pattern on the substrate, such that the fine stripe pattern and the mask pattern are printed superposedly, wherein, in the pattern structure, a particular structural portion of the device is disposed in a portion where the fine stripe pattern and the mask pattern are printed superposedly.
Patent KR-20010019914-A (KR)
Inventor: LEE PAN SEOK
IPC: B60J5/10
Filed: 1999-08-31
Abstract: PURPOSE: A tail gate opening device opens a tail gate by constraint by an elasticity of a spring when the tail gate does not open or components does not operate well. CONSTITUTION: A tail gate opening device comprises a spring(20) and a lever(30). The spring(20) is adhered to an end portion of the lever(30) and an one side of the inner portion of a latch(10). The lever(30) of a rod form and fixed in the inner portion of the latch(10) by a rotation shaft pushes a striker(14) by using an elasticity of the spring(20). The rotation shaft is placed higher than or equal to a step of an inserting portion in the rachet(10). The height of a rotation shaft(32) is higher than or equal to the height of the end portion of an inserting groove(12) of the latch(10)
Patent KR-20010027768-A (KR)
Inventor: KIM DO HYEONG
IPC: H01L21/316
Filed: 1999-09-15
Abstract: PURPOSE: A method for gap-filling a recessed portion is provided to form the recessed portion having no void, by adjusting a flow rate of SiH4 gas and O2 gas as reaction gas in forming a high density plasma(HDP) oxide layer. CONSTITUTION: A recessed portion is formed on a semiconductor substrate. The recessed portion is filled by using a high density plasma(HDP) oxide layer, and SiH4 gas and O2 gas as plasma reaction gas are used, wherein a filling process is performed at a flow rate of 1:1.1 of the SiH4 gas and the O2 gas.
Patent KR-20010028117-A (KR)
Inventor: LEE YONG HYEOK
IPC: H04L12/24
Filed: 1999-09-17
Abstract: PURPOSE: A method for processing a human machine command of optical communication system is provided to easily add/delete a command and to use different commands not familiar by formatting all commands in the form of table. CONSTITUTION: A command table having an operation code recorded therein for enabling all commands inputted to communicate with a corresponding function processing part is formed(S10). An access code defining an addition of all the commands is assigned (S20). It is determined whether a command inputted in a command inputting stage(S30) is in a command table formed in S20 or not(S40). Next, a syntax table having a type of Token String, a Separator, a Minimum Character, a Maximum Character, an Omit, a Case Count and a Parameter recorded therein is read out(S50). Then, it is determined whether the syntax of command identified in S40 is in the syntax table or not(S60). A file having a value of the Token string which is a predetermined or settable value for all the identified commands is accessed(S70). Subsequently, it is determined if a value of the Token string applied from S60 is agreed with the value of the accessed file or not(S80). Then, the value of all the commands identified and the Token string are converted to be processed in a corresponding functional part(S90) and the converted value and the converted Token string are processed and outputted in the form of Out Format(S100).
Patent KR-20000030074-A (KR)
Inventor: MIN KYUNG HUY
IPC: A47C7/46
Filed: 1999-10-06
Abstract: PURPOSE: A waist supporter to be bound to the back of a chair is provided to disperse the pressure put upon the waist and to support the waist, so that the chair becomes more comfortable. CONSTITUTION: The waist supporter(B) is bound to the back of a chair(A) at the position of waist, wherein the supporter may be moved horizontally back and forth by functioning of the flexible material(5) such as spring, etc. The waist supporter combined with the flexible material is bound to the back of a chair using the clamp to safely support the waist, wherein the clamp consists of two sliding tubes(3) followed by two sliding axes. This waist supporter can be applied to all chairs having the back, so that it will decrease or get rid of stress put on the waist and further may prevent from waist diseases.
Patent KR-20010036530-A (KR)
Inventor: PARK SOO HONG
IPC: F16K21/00
Filed: 1999-10-08
Abstract: PURPOSE: An application of a corrugated tube to a valve is provided to convey the fluid flowing in a valve safely without any leakage and to prevent the excessive force and abrasion of each part of the valve, thereby improving the durability and reliability of fluid conveying equipment and pipelines. CONSTITUTION: In the application of a corrugated tube(8) to a valve, a valve for controlling flow by shutting off or passing the fluid flowing in a main body(4) of the valve by the vertical operation of a stem in a bonnet(3) formed with an internal screw part is mounted with the corrugated tube at the lower part of the stem so that the bonnet and the stem do not contact each other, and a valve disc is mounted in the shape of a top for dispersing shocks when the water hammering happens.
Patent KR-20010046000-A (KR)
Inventor: LEE UK HA
IPC: H01L21/8242
Filed: 1999-11-09
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to improve process margin in forming a gate in cell and core/peripheral regions, and to prevent polysilicon from being left in the core/peripheral region when a polysilicon plug is formed. CONSTITUTION: A cell region and a core/peripheral region are defined in a semiconductor substrate. A gate insulating layer, a conductive layer, a metal silicide layer and a gate cap-insulating layer are sequentially formed on the substrate. The gate cap insulating layer, the metal silicide layer and the conductive layer formed in the cell region are selectively removed to form the first gate electrode. A source/drain impurity region is formed in the semiconductor substrate at both sides of the first gate electrode. The first sidewall spacer is formed at both side surfaces of the first gate electrode. A conductive plug having the same height as the gate cap-insulating layer is formed on the substrate. The gate cap insulating layer, the metal silicide layer and the conductive layer formed in the core/peripheral region are selectively removed to form the second gate electrode. Halo and LDD regions are formed in the substrate at both sides of the second gate electrode. The second sidewall spacer is formed at both side surfaces of the second gate electrode. A source/drain impurity diffusion region is formed in the substrate at both sides of the second gate electrode. The conductive plug in a region except the cell region is removed. An insulating layer is formed on the substrate.
Patent KR-20010046583-A (KR)
Inventor: KIM GI WON
IPC: B01D46/42
Filed: 1999-11-13
Abstract: PURPOSE: Provided is a magnetic device for intake air to sharply reduce emissions by cutting back on the use of gasoline and burning as much fuel as possible while increasing engine power. CONSTITUTION: The magnetic device for intake air is comprised of the following compartments. A metal pipe (sus 304)(2) having a certain diameter and a size is inserted into a strong magnetic bar. Metal caps are inserted into the ends of the magnetic bar for fixing it. The metal pipe (2) is inserted into a receiving pipe(6) which has holes of a small size. And a circular metal plate (8) with many holes is vertically bound with the receiving pipe. Another circular metal plate (8a) with larger holes (7a) is vertically bound with the receiving pipe nearby.
Patent KR-20010046880-A (KR)
Inventor: KIM HYEON JEONG
IPC: C07C5/22
Filed: 1999-11-16
Abstract: PURPOSE: A method for isomerizing a cycloolefin having a non-conjugated double bond by using a catalyst is provided which provides high activity and selectivity to the isomerization reaction of the cycloolefin and improves production yield. CONSTITUTION: The cycloolefin having a C6-12 ring and a non-conjugated double bond is isomerized by moving the double bond of the unsaturated cycloolefin by using catalysts of a metallic compound of group (IV) represented by L4-nMXn, wherein M is titanium, zirconium or hafnium, X is halogen, L is a ligand of 3-8 pi electrons donor, and n is 1, 2 or 3, and an organic aluminum compound represented by RmAlX3-m, wherein R is a C1-20 alkyl group or an aryl group, m is 1, 2 or 3, X is halogen or C1-10 alkyl group, alkoxy group or X is a halogen or a hydrogen when the m is 2.
Patent KR-20010048495-A (KR)
Inventor: HWANG JAE HO
IPC: B29D11/00
Filed: 1999-11-26
Abstract: PURPOSE: An apparatus for manufacturing a light guide plate and a manufacturing method thereof are to fix a stamper to a core member, thereby obtaining a stable production. CONSTITUTION: The apparatus for manufacturing a light guide plate comprises a stamper(54) for molding a light guide plate, a core member(58) having a predetermined thickness and a fixing member(56). The stamper is fixed to the core member to thereby form a die(60) for molding the light guide plate. The fixing member fixes the stamper to the core member. The stamper and the core member are plated with a nickel. The core member is formed with one of a nickel and an HP4M. A thickness of the stamper is about 0.3 to 0.4 millimeter, and a thickness of the core member is about 20 to 30 millimeter. A bolt can be used as the fixing member.
Patent KR-20010048985-A (KR)
Title: Output driver circuit of rambus dram
Inventor: CHO SEONG IK
IPC: G11C11/40
Filed: 1999-11-30
Abstract: PURPOSE: An output driver circuit of a RAMBUS DRAM is provided to advance operation time by reducing the counting number from 75 to the maximum 7 by setting an output of a 7 bit counter from the uppermost bit sequentially to a desired voltage level. CONSTITUTION: The output driver circuit includes: an output driver unit which is constituted with the first and the second output driver stage outputting the first power supply voltage and the second power supply voltage respectively, and the second power supply voltage level is controlled by an n bit signal of a counter; a voltage distribution unit distributing an output voltage of the first and the second output driver stage; the first and the second switching unit switching the output voltage of the first and the second driver stage to the voltage distribution unit; a comparison amplification unit comparing/amplifying of the output voltage of the voltage distribution unit with a reference voltage; an n bit counter unit(520) outputting from a middle value of the first n bit and outputting from the uppermost bit sequentially by one bit until an output voltage level of the comparison amplification unit becomes a desired voltage level; and the third switching unit switching an output voltage of the comparison amplification unit to the n bit counter unit. The switching units are NMOS transistors.
Patent KR-20010054110-A (KR)
Title: High voltage detecting circuit
Inventor: JANG YEONG BAE
IPC: G05F1/10
Filed: 1999-12-03
Abstract: PURPOSE: A circuit for detecting high voltage is provided to determine whether boosted voltage by a boosting circuit is suitable to program and erase of flash memory to prevent step-down of the boosted voltage. CONSTITUTION: The differential amplifier part(100) is enabled by a high voltage detection signal and amplifies the difference signal between reference voltage and the output signal from the voltage stepping down part(500) to predetermined level. The pull-down part(300) pulls down the input terminal of the differential amplifier part(100) by the high voltage detection signal. The pull-up part(200) pulls up the output terminal of the differential amplifier part(100) to predetermined level by the high voltage detection signal. The buffer part(400) buffers and outputs the output signal from the differential amplifier part(100).
Patent KR-20010056085-A (KR)
Inventor: LEE BONG JAE
IPC: H01L21/76
Filed: 1999-12-14
Abstract: PURPOSE: A fabrication method of a semiconductor device is provided to obtain a more planarized structure and also to simplify a process by adopting a single planarization step and performing an ion implantation step before a trench formation step. CONSTITUTION: In the method, an insulating layer is formed on a semiconductor substrate(21), and then a channel doping region(23) is formed in the substrate(21) by implanting ions. The insulating layer may be an oxide layer or a nitride layer, and acts as a buffer layer during the ion implantation. A resultant structure is then classified into an active area and an inactive area, and the insulating layer and the substrate(21) in the inactive area are etched to form a trench. The trench is formed to a depth greater than that of the channel doping region(23). Next, a resultant structure is covered with an oxide layer(24) and then planarized by using a chemical mechanical polishing until the channel doping region(23) is exposed.