baber/WOPTO huggingface dataset:
Patent TW-385562-B (TW)
Title: Lithium ion electrochemical cell
Inventor: MOSES PETER R
IPC: H01M50/489
Filed: 1998-07-20
Granted: 2000-03-21
Abstract: A lithium ion cell having an amount of a Group 1 element between the positive electrode (14) and the negative electrode (10) is described. The Group 1 element can be on an surface of an electrode separator (18) as a deposit. The Group 1 element can increase the charging capacity of the cell, eliminate the irreversible capacity of the cell, improve the rechargeable cell cyclability, or increase the charging reversibility of the cell.
Patent TW-449575-B (TW)
Title: Method of bonding objects to be bonded by using a microwave heating apparatus
Inventor: TAKEDA MAMORU
IPC: H05B6/02
Filed: 1998-08-11
Granted: 2001-08-11
Abstract: Materials transparent for microwaves cannot be heated to high temperatures by using conventional microwave heating apparatuses and conventional bonding methods using such apparatuses. To solve this problem, the present invention discloses a microwave heating apparatus and a method of bonding objects thereby, being characterized as described below. A susceptor 10 is disposed at a predetermined position in an applicator 2, and at the passing-through portion of the susceptor 10, two ceramic materials 13 and an intermediate frit material 14 are disposed so that the intermediate frit material 14 is sandwiched between the two ceramic materials 13. In addition, at the position of the susceptor 10, the distance between a magnetron oscillator and a reflection plate with an adjustment rod is adjusted so that a microwave from the magnetron oscillator can resonate. In this condition, the susceptor 10 absorbs the microwave from the magnetron oscillator and generates radiation heat on the basis of the energy of the absorbed microwave to heat the intermediate frit material 14 to a high temperature, thereby to melt it. The melted intermediate frit material is used as a bonding material to bond the two ceramic materials 13.
Patent TW-399232-B (TW)
Title: Semiconductor device with improved flat surface and its manufacture method
Inventor: YAMADA NAOTO
IPC: H01L23/528
Filed: 1998-08-21
Granted: 2000-07-21
Abstract: A semiconductor substrate has an element formation region and a scribe line region surrounding the device formation region. A metal wiring layer is formed to cover the end portions of multiple interlayer insulating films over the entire periphery of the device formation region. It also includes cut portions at the corner of the device formation region. Then, a SOG film is spin coated onto the entire surface of the substrate. At that time, material of the SOG film flows out through the cut portion toward the scribe line region to prevent a SOG puddle from forming at the corner of the device formation region.
Patent TW-391897-B (TW)
Title: Apparatus for and method of sizing helical gears
Inventor: MATSUBARA SADAO
IPC: B21K1/30
Filed: 1998-08-27
Granted: 2000-06-01
Abstract: The present invention provides a tooth profile sizing apparatus and method for helical gears which are capable of shortening a cycle time for the sizing process to improve productivity and to allow production thereof at a low equipment cost. In order to accomplish the above object, the sizing apparatus comprises a lower punch 7 for carrying thereon a gear blank W, which is formed with a rotatable first lower punch 7a and a non-rotatable second lower punch 7b. A sizing die 8 is formed to be rotatable and vertically movable with its inner peripheral teeth s in engagement with the outer peripheral teeth p of the first lower punch 7a. An upper punch 9 for pressing the gear blank W into the sizing die 8 is formed with a rotatable first upper punch 9a and a non-rotatable second upper punch 9b. The upper punch 9 moves in the vertical direction and is provided on its outer circumferential surface with outer peripheral teeth q.
Patent TW-505648-B (TW)
Title: Preparation of 14-hydroxynormorphinones, oxycodone noroxymorphone, oxymorphone and naltrexone from normorphinones
Inventor: HUANG BAO-SHAN
IPC: C07D/
Filed: 1998-09-29
Granted: 2002-10-11
Abstract: This invention relates in general to process for the conversion of normorphinone and its derivatives, which can be synthesized from morphine, to the corresponding 14-hydroxynormorphinone and its derivatives including oxycodone, oxymorphone, noroxymorphone, and naltrexone. Noroxymorphone is a key intermediate for the production of important narcotic analgesics and antagonists. In another aspect, the invention is directed to certain novel intermediates.
Patent TW-409257-B (TW)
Title: Circuit for detecting both charge gain and charge loss properties in a nonvolatile memory array
Inventor: LIU DAVID K Y
IPC: H01J9/02
Filed: 1998-10-15
Granted: 2000-10-21
Abstract: A test circuit for observing charge retention characteristics of cells in a flash memory array is disclosed. Unlike prior art structures, the present circuit monitors both charge loss and charge gain of cells in the array. In this way, cells having conduction thresholds below a desired target threshold and cells having conduction thresholds above a desired target threshold can both be observed. The circuit includes a regular memory array, and a mirror array formed with devices having opposite channel types to the regular array. By identifying and evaluating more accurately the threshold characteristics of a particular cell design or cell process, improvements can be made to such designs and processes in a more rapid and optimal fashion.
Patent TW-448663-B (TW)
Title: Broadcast data access controller communication system
Inventor: BOWMAN PHILIP J
IPC: H04N7/167
Filed: 1998-10-17
Granted: 2001-08-01
Abstract: Disclosed is a method and apparatus for enabling an authorized receiver station to decrypt encrypted information broadcast by a transmitter station, and for decrypting the information within the authorized receiver station. The method includes steps of storing a predetermined subscription key value in the authorized receiver station and, using the predetermined subscription key value, generating a decryption key value. In a next step the transmitter station broadcasts a signal which includes the encrypted information. After the broadcasted signal is received at the authorized receiver station, the authorized receiver station performs a predefined algorithm. The predefined algorithm uses the generated decryption key value to decrypt the encrypted information from the received signal.
Patent TW-401316-B (TW)
Title: Process for treating particles
Inventor: KOSKI AHTI AUGUST
IPC: C08L101/00
Filed: 1998-11-20
Granted: 2000-08-11
Abstract: Particles are hydrophobicized by treatment with a compound containing amino and silane groups. The invention is particularly useful for treating hydrophilic inorganic particles to provide the functionality of a coupling agent without the need to react the hydrophilic inorganic particles with a coupling agent, per se. The treated particles can be used, for example, as a compound agent for polymers.
Patent TW-444036-B (TW)
Title: Biaxially oriented polyester film for a membrane switch
Inventor: FURUYA KOJI
IPC: C08J5/18
Filed: 1998-11-21
Granted: 2001-07-01
Abstract: A biaxially oriented polyester film for a membrane switch, which is made from a polyester containing at least 85 mol% of ethylene-2,6-naphthalene dicarboxylate recurring units and which has an endothermic peak with an endothermic energy of at least 0.4 mJ/mg at a temperature of 110 to 160 DEG C. This film is produced by subjecting a biaxially oriented polyester film produced from the above polyester in accordance with a method known per se to the following steps in the order named: (1) the step of heating the film under no strain at a temperature of 150 to 180 DEG C for 1 to 5 hours; and (2) the step of heating the film in an unrolled or rolled state at a temperature of 80 to 122 DEG C for 5 to 200 hours.
Patent TW-577891-B (TW)
Title: Process for preparing dialkylphosphinic acids
Inventor: WEFERLING NORBERT
IPC: C07F9/30
Filed: 1998-11-24
Granted: 2004-03-01
Abstract: The invention relates to a process for preparing dialkylphosphinic acids and/or alkali metal salts thereof by reacting olefins with alkylphosphonous and/or hypophosphorous acid and/or alkali metal salts thereof, which comprises carrying out the reaction in the presence of a free-radical initiator. The invention also relates to the use of the products prepared by the abovementioned process for preparing flame retardants.
Patent TW-448351-B (TW)
Title: Power-saving mode system and its execution method
Inventor: LIN JING-JR
IPC: G06F1/32
Filed: 1998-11-23
Granted: 2001-08-01
Abstract: This invention is a basic structure for power-saving mode system consisting of a power management unit (PMU), a pseudo commander in coordination with operating system and makes it mainly control the operation when in power saving mode of the power-saving mode system. By using brand new power-saving mode Sn, the PMU can control the pseudo commander, the control button of device system and power supply of device system controller and the device system can execute the function through the device system controller under power-saving mode.
Patent TW-548256-B (TW)
Title: Filtration-type mold and method for producing ceramic sintered body using the mold
Inventor: NAKAMURA ISAO
IPC: C04B38/00
Filed: 1999-02-02
Granted: 2003-08-21
Abstract: The purpose of the present invention is to obtain a molding which contains only a small amount of impurities, is free of internal defects and uniform in density and composition, and has difference in thickness by a cheap mold, and provide a method for producing a large-size, high-purity ITO sintered compact with an increased anti-dissolution strength and free of defects such as cracking, bursting, etc. after sintering. The mold for obtaining a molding by vacuum-draining water in slurry from only the side of a filter surface by reducing pressure comprises a molding lower mold having at least one drain hole, a water permeable filter, a sealant for sealing the filter, and a mold frame for clamping the sealant from above. The molding lower mold, the molding frame, the sealant and the filter can be assembled/disassembled. The filter passes water from the slurry by vacuum draining. A method for preparing an ITO sintered body having a difference in wall thickness comprises preparing a slurry formed of an indium oxide powder, a tin oxide powder, ion-exchanged water and organic additives; injecting the slurry into the abovementioned filtration-type molding mold; removing water from the slurry by vacuum draining over the filter to prepare a molded article; and drying, degreasing and sintering the ITO molded article.
Patent TW-396088-B (TW)
Title: Workpiece buffing device
Inventor: KAWASAKI SHUJI
IPC: B24D13/02
Filed: 1997-11-14
Granted: 2000-07-01
Abstract: This is a workpiece buffing device, which is composed of one separation-proof component installed on the front tip of work piece. The outer edge of buffing wheel connects the separation-proof component and one fixing nut screws with buffing ring together. The buffing wheel fits well with rotating axle through the movement along fixing nut's rotating axle.
Patent TW-406301-B (TW)
Title: Manufacturing method of dual alignment mask and the method using the same
Inventor: CHEN JR-RUNG
IPC: H01L21/027
Filed: 1999-04-28
Granted: 2000-09-21
Abstract: A manufacturing method for dual alignment mask is provided. First, one none transparent layer is deposited and its pattern is defined on one sheet glass. Then, one changeable transparent layer is deposited and its pattern is defined on the above two. Finally, one protection layer is deposited on the top. Wherein, the changeable transparent layer can be used to control the light penetration according to the temperature variation to process the trench and the via window under the same mask, by doing so, the cost can be reduced effectively and the alignment error can be avoided.
Patent TW-504498-B (TW)
Title: Method for making lithiated manganese oxide
Inventor: PADHI AKSHAYA KUMAR
IPC: C01G45/12
Filed: 1999-05-15
Granted: 2002-10-01
Abstract: The invention is a process which provides a high purity lithiated manganese oxide (Li1+xMn2-yO4) from chemically made MnO2. The lithiated manganese oxide has an especially effective utility for use as a cathodic material in rechargeable batteries. The process of the invention includes blending a lithium compound with a chemically made manganese dioxide to form a manganese dioxide/lithium compound blend. The lithium compound in the blend is at least about one mole of lithium for every mole of manganese dioxide. The manganese dioxide and lithium compound in the blend undergo an ion exchange reaction to provide an ion replaced product where lithium ions have replaced sodium and potassium ions in the MnO2 to form an ion replaced product. Thereafter, the ion replaced product is heated or calcined to provide the lithiated manganese oxide.
Patent TW-422771-B (TW)
Title: Non-nodal mounting system for acoustic horn
Inventor: MLINAR JOHN RUSSELL
IPC: B06B3/00
Filed: 1999-05-15
Granted: 2001-02-21
Abstract: A non-nodal mounting system 14 for an ultrasonic element includes a drive ring 22 and a flexible member 24. The drive ring is rotatably connected to a mounting housing 16. The flexible member is fixed at a radially inner portion to the ultrasonic element and  at a radially outer portion to the drive ring. The flexible member can include flexible fingers 30 for reducing the force transmitted to the drive ring. Also, the flexible member can include an inner annular ring 26 at the radially inner portion and a concentric annular ring at the radially outer portion. The rings are connected by the fingers.
Patent TW-I236506-B (TW)
Title: Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
Inventor: IIDA MAKOTO
IPC: C30B15/02
Filed: 1999-05-26
Granted: 2005-07-21
Abstract: There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm<2>/DEG C.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (DEG C/mm) along the pulling direction within a temperature range of the melting point of silicon to 1400 DEG C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.
Patent TW-432801-B (TW)
Title: Method and apparatus for performing the combination of double-frequency or melody by using pulse width modulation
Inventor: SUEN JENG-YUN
IPC: H03K7/00
Filed: 1999-05-31
Granted: 2001-05-01
Abstract: This invention is concerned with a method and apparatus for performing double-frequency or melody synthesis by using pulse width modulation. The invention includes the followings: the procedure of making double-frequency or melody signals individually perform pulse width modulation in order to individually generate PWM square wave signal; the procedure of storing two square wave signals with different frequency; and the procedure of alternately reading out two sets of stored square wave signals to combine into single set of square wave signal. The modulating transformation procedure of PWM is generated after computer executes appropriate program. In other words, for the aspect of hardware-structure in this invention, there are only storage device and switch device such that the circuit structure can be effectively simplified to reduce production cost.
Patent TW-500710-B (TW)
Title: Process for the production of improved boron coatings
Inventor: SUPLINSKAS RAYMOND J
IPC: C04B41/52
Filed: 1999-08-30
Granted: 2002-09-01
Abstract: Improved articles of manufacture are disclosed, together with methods for preparing articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating. A method for preparing a boron-coated surface on a porous substrate, said method comprising the steps of: (a) immersing a porous substrate in a liquid hydrocarbon; (b) while said substrate is immersed in said liquid hydrocarbon, heating the substrate so as to establish a temperature gradient through the substrate whereby at least the interior of the substrate is heated to a temperature above the decomposition temperature of the hydrocarbon while maintaining a lower temperature at the surface of the substrate, for a period sufficient to at least partially densify the surface of the substrate to reduce surface porosity, while maintaining adequate roughness in the surface of the substrate to promote mechanical locking with a subsequently applied elemental boron coating; and (c) coating the at least partially densified substrate surface with elemental boron.
Patent TW-468365-B (TW)
Title: Printed circuit board and manufacturing method thereof
Inventor: NOJIOKA SHINICHI
IPC: H05K3/34
Filed: 1999-08-31
Granted: 2001-12-11
Abstract: The subject of the present invention is to provide a printed circuit board with an increased strength of solder by preventing solder bridge formation and increasing the amount of solder adherent thereto. A land 1 serving as a soldering foundation is formed in a star-shape, so as to minimize the proximal peripheral length L2 between adjacent lands only with a distance of L1, thus reducing the possibility of solder bridge formation. Since the star-shaped land 1 has a greater area than a rhombic land of identical size, the amount of solders adherent thereto is greater than that of the rhombic land, thus enabling to increase the strength of solder.
Patent TW-436935-B (TW)
Title: Forming method of gallium arsenic hetero-junction bipolar transistor and its single chip high-density layout
Inventor: CHI YOU-MING
IPC: H01L21/33
Filed: 1999-09-28
Granted: 2001-05-28
Abstract: This invention is about hoof-shaped hetero-junction bipolar transistor structure and its forming method. This transistor at least includes the followings: a gallium arsenic semi-insulating substrate; a sub-collector, which is formed on the semi-insulating substrate; a collector, which is formed on the sub-collector so as to make the exposed part of the sub-collector form the hoof-shaped periphery; a base, which is formed on the collector; a hoof-shaped emitter, which is formed on the base such that the exposed part of base is located on the symmetrical central line of the hoof-shaped emitter. The exposed parts of sub-collector and base, and the emitter have metal electrode. Then, a nitride layer is used to cover HBT (hetero-junction bipolar transistor) and only the metal electrode stated above is exposed.
Patent TW-424280-B (TW)
Title: Low dielectric constant insulating film resin composition, method of forming low dielectric constant insulating film, and method of producing semiconductor device
Inventor: MUROYAMA MASAKAZU
IPC: C08L71/00
Filed: 1999-09-30
Granted: 2001-03-01
Abstract: A low dielectric constant insulating film resin composition for a semiconductor device, comprising a polyaryl ether-based low dielectric constant insulating film material and an antioxidant, a method of forming a low dielectric constant insulating film for a semiconductor device including the steps of coating and drying the above resin composition on the surface of a substrate, and a method of producing a semiconductor device provided with the above low dielectric constant insulating film, effectively suppressing the generation of carbon dioxide or carbon monoxide due to an oxidation reaction when forming an low dielectric constant insulating film for a semiconductor device using a polyaryl ether-based low dielectric constant material.
Patent TW-451538-B (TW)
Title: Latch up protection circuit suitable for use in multi power supply integrated circuit and its method
Inventor: LIN SHI-TSUNG
IPC: H02H3/20
Filed: 1999-10-16
Granted: 2001-08-21
Abstract: This invention is about a kind of latch up protection circuit and is suitable for use in the integrated circuit that has the power source supplied from the first power source line and the second power source line, in which the integrated circuit has at least one semiconductor bulk with the same conducting type. This latch up protection circuit has a comparing control circuit and a switch circuit. The comparing control circuit is connected with the first power source line and the second power source line, in which the first control signal and the second control signal are generated after a relative voltage value of the first power source line with respect to the second power source line is detected. The switch circuit is connected with the first power source line and the comparing control circuit. When the relative voltage value is higher than the first predetermined value, the switch circuit connects the first power source line with the semiconductor bulk according to the first control signal. When the relative voltage value is lower than the first determined value, the switch circuit blocks in between the first power source line and the semiconductor bulk according to the first control signal.
Patent TW-491863-B (TW)
Title: Oxazolidone ring-containing epoxy resin
Inventor: YAMOTO SHUHEI
IPC: C08G18/10
Filed: 1999-10-27
Granted: 2002-06-21
Abstract: The present invention provides a novel oxazolidone ring-containing epoxy resin suitable for use as a resin for a coated film having a structure of the formula: wherein R3 represents a residue excluding epoxy groups of diepoxide, X represents a residue excluding isocyanate groups of polyurethane diisocyanate, and n represents an integer of 1 to 5; and wherein X has a structure of the formula: wherein R1 represents a residue excluding isocyanate groups of diisocyanate, R2 represents a residue excluding hydroxyl groups of diol, and m represents an integer of 2 to 10. The oxazolidone ring-containing epoxy resin of the present invention affords a coated film excellent in impact resistance in addition to heat resistance, and corrosion resistance.
Patent TW-I247791-B (TW)
Title: Etching solution
Inventor: KEZUKA TAKEHIKO
IPC: C09K13/08
Filed: 1999-11-23
Granted: 2006-01-21
Abstract: This invention is related to an etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 100 Å/min or less at 25 DEG C, and an etching rate ratio: etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less.
Patent TW-469166-B (TW)
Title: Method and apparatus for filtering hot syngas
Inventor: MCILROY ROBERT A
IPC: B01D46/24
Filed: 1999-12-06
Granted: 2001-12-21
Abstract: A method and apparatus for filtering oxidizable particles from hot synthesis gas or syngas uses a pair of candle filters each having an inlet side for receiving the hot unfiltered syngas to be filtered, and an outlet side for discharging hot filtered syngas. One housing contains both filters or a separate housing is provided for each filter. Each housing has an inlet for receiving hot unfiltered syngas and for supplying the hot unfiltered syngas to each of the filter inlet sides. Each housing also has an outlet for discharging hot filtered syngas from each of the filter outlet sides. Air is supplied to each housing for supplying combustion air alternately to each of the candle filters for burning oxidizable particles trapped on each respective filter to clean each filter while the other filter is filtering the hot unfiltered syngas. One or more switching valves are connected to the combustion air supplies for alternating the supply of combustion air between the candle filters.