baber/WOPTO huggingface dataset:
Patent TW-514734-B (TW)
Title: Integrated circuit device having boundary scan register
Inventor: SUZUKI MASAHITO
IPC: G01R31/3185
Filed: 2001-07-03
Granted: 2002-12-21
Abstract: An integrated circuit device having a plurality of input terminals comprises: a plurality of input buffers provided in correspondence to the plurality of input terminals; a plurality of serialparallel conversion circuits for converting, inserial-parallel, outputs of the input buffers, respectively; and a plurality of boundary scan registers which are provided in correspondence to each input terminal. The output of the input buffer is supplied to the serial parallel conversion circuit and the boundary scan register in parallel, to restrict a delay element between the input buffer and the serial parallel conversion circuit at a minimum.
Patent TW-I230276-B (TW)
Title: Light guide plate capable of converting a light source wavelength and backlight module
Inventor: JANG SUNG-SHUEI
IPC: G01D11/28
Filed: 2001-07-10
Granted: 2005-04-01
Abstract: A light guide plate for flat panel display devices is used with at least one light source, being characterized in that the light guide plate comprises at least one fluorescent composition coated on one side adjacent to the light source to receive incident light and convert the incident light into white light.
Patent TW-I235716-B (TW)
Title: Container holder
Inventor: SAMBONMATSU TOHRU
IPC: B60N3/10
Filed: 2001-08-17
Granted: 2005-07-11
Abstract: To provide a container holder allowing a cover body to be openably installed on a body even if a guide hole is not provided in the inner surface of the body. A guide part 36 and a guide part 38 are provided on the outer surface of the body 12. A hook-like shaft plate 40 is extended from both end parts of the cover body 16, and pins 42 and 44 are installed at the tip part 40A and bent part 40B of the shaft plate 40 projectedly inward. When the pins 42 and 44 are engaged with guide recessed parts 34 from the outside of the body 12, the pin 42 is moved in the guide part 36, and the pin 44 is moved in the guide part 38. Thus, the cover body 16 opens and closes a holding part for holding a container. By providing the guide recessed parts 34 on the outer surface of the body 12 and engaging the pins 42 and 44 to the guide recessed parts 34 from the outside of the body 12, the guide hole must not be provided in the inner surface of the body 12 and, therefore, the appearance is not impaired.
Patent TW-550337-B (TW)
Title: In-tank fuel supply apparatus
Inventor: YOSHIOKA HIROSHI
IPC: F02M37/48
Filed: 2001-08-29
Granted: 2003-09-01
Abstract: A fuel supply apparatus for installation in a fuel tank includes a fuel pump, a housing, and a filter element disposed in the housing and having an upstream side communicating with the discharge port of the fuel pump. A check valve communicates with a downstream side of the fuel filter, and a pressure regulator communicates with the upstream side of the filter element. A sedimentation flow path may be provided for removing sediment from fuel discharged from the pressure regulator. The sedimentation flow path may be substantially cylindrical vortex spaces between fins disposed on the inner periphery of the pump holder and has blind holes at the bottom for trapping the sediments.
Patent TW-I220381-B (TW)
Title: A method of combating phytopathogenic diseases on crop plants and a fungicidal composition having synergistic fungicidal activity
Inventor: NUNINGER COSIMA
IPC: A01N43/50
Filed: 2001-09-10
Granted: 2004-08-21
Abstract: It has now been found that the use of (A) a N-sulfonyl-valine-amide of formula I, wherein R1 is hydrogen, C1-4alkyl, C3-6cycloalkyl or halophenyl, and R2 is C1-4alkyl; in association with (B) either compounds of formulae II to XII is particularly effective in combating or preventing fungal diseases of crop plants. These combinations exhibit synergistic fungicidal activity. Prominent examples for the compounds of formulae II to XII are: acibenzolar-S-methyl, azoxystrobin, chlorothalonil, cymoxanil, dimethomorph, fluazinam, fludioxonil, imazalil, S-imazalil, mancozeb, metalaxyl, metalaxyl-M, picoxystrobin, pyraclostrobin (BAS 500F) and trifloxystrobin.
Patent TW-522286-B (TW)
Title: Methods for manufacturing half tone type phase shift mask blank, photo mask and half tone type phase shift mask, and half tone type phase shift mask blank, half tone type phase shift mask, photo mask blank, and photo mask manufactured thereby
Inventor: NOZAWA OSAMU
IPC: G03F1/68
Filed: 2001-09-12
Granted: 2003-03-01
Abstract: To provide a method for manufacturing a phase shift mask blank having a light translucent film or a light translucent portion having the designated phase angle and transmittance and being superior in film characteristics of chemical resistance, light resistance, and internal stress. The invention is characterized by having a translucent film on a transparent substrate, wherein thermal treatment of the translucent film is implemented at more than 150 DEG C after forming the translucent film comprising nitrogen, metal, and silicon as a main component on said transparent substrate.
Patent TW-546163-B (TW)
Title: Method for reducing the SOx emission from a plant for manufacturing cement clinker and such plant
Inventor: SKAARUP JENSEN LARS
IPC: C04B7/60
Filed: 2001-09-14
Granted: 2003-08-11
Abstract: A description is given of a method as well as a plant for reducing the SOx emission from a plant for manufacturing cement clinker by which cement raw meal is preheated and burned in a plant comprising a cyclone preheater (1) and a kiln (7). The method is peculiar in that a catalyst in the form of a chloride compound and/or a mixture of several chloride compounds is introduced into the preheater (1) at its uppermost or next-to-uppermost cyclone stage (2, 3), that the catalyst is directed down through the preheater (1) to the kiln (7), that a partial amount of the kiln exhaust gas stream containing the catalyst in vaporized form is extracted from the kiln (7), that the extracted exhaust gas stream is cooled off so that the catalyst is present in solid form, that solid matter is separated from the cooled exhaust gas stream and that at least some of the separated solid matter containing the catalyst is recirculated for renewed introduction into the preheater (1). Hereby is obtained an effective reduction of the SO2 emission. The reason for this is that chloride compounds and/or a mixture of several chloride compounds will promote the reaction catalytically of SO2 with CaO for formation of CaSO3 and it will further promote the reaction of SO2 with CaCO3 for formation of CaSO3 and CO2. Since CaCO3 is present in great abundance, the SO2 reduction may be effected without any use of extraneous chemicals.
Patent TW-I259451-B (TW)
Title: Audio-visual player capable of updating core programs automatically
Inventor: KE SZ-SHIUNG
IPC: G11B27/00
Filed: 2001-10-04
Granted: 2006-08-01
Abstract: The present invention relates to an audio-visual player capable of updating core programs automatically, which comprises a carrying mechanism module and a major controlling module. The carrying mechanism module is used to carry a disc. The carrying mechanism module has a carrying mechanism memory unit with an updating sub-program stored therein. The major controlling module has a main memory unit, and the major controlling module is used to control the carrying mechanism module. When the major controlling module detects that the disc has a carrying mechanism core program, it is capable of transmitting a updating instruction to the carrying mechanism module so as to enable the carrying mechanism module to initiate the updating sub-program and start the update of the carrying mechanism memory unit, writing the carrying mechanism core program into the carrying mechanism memory unit.
Patent TW-586294-B (TW)
Title: Communication system and method for shared context compression
Inventor: ALLDEN JOHAN
IPC: H03M7/30
Filed: 2001-11-14
Granted: 2004-05-01
Abstract: A system, method, and apparatus for increasing the efficiency of the compression of a communication protocol for use over bandwidth limited communication links. One aspect of the present invention provides for the sharing of context information between a compressor (214, 245, 415) and decompressor (225, 235, 435) at each communication entity (210, 230, 410, 430) in a communication system. As a result, context information will be shared for each channel pair. In another aspect of the present invention, multiple communication sessions between communication entities (210, 230, 410, 430) may share the same context information for the compression and decompression of communication messages.
Patent TW-536518-B (TW)
Title: Reel assembly for use in a tape dispenser, cartridge for housing a reel assembly of a correction tape dispenser, and a correction tape dispenser
Inventor: FERRARA DANIEL A
IPC: F16D35/00
Filed: 2001-11-26
Granted: 2003-06-11
Abstract: The invention relates to a reel assembly for a tape dispenser that includes a supply reel and a take-up reel. The reel assembly incorporates a clutch in the form of a viscous material disposed between a portion of the supply reel and a portion of the take-up reel. The viscous material serves to couple and provide controlled drag between the supply reel and take-up reel in order to properly tension a correction tape as it is dispensed from a correction tape dispenser. The invention also relates to a tape dispenser that utilizes a reel assembly having a viscous clutch and a tape cartridge. The reel assembly is preferably used in a correction tape dispenser for applying a correction film to a substrate.
Patent TW-561487-B (TW)
Title: Method for operating a non-volatile memory
Inventor: HUANG CHIH-JEN
IPC: G11C16/12
Filed: 2001-12-11
Granted: 2003-11-11
Abstract: A method for operating a non-volatile memory device, which is applicable to an n-channel non-volatile memory device, wherein a positive voltage is applied to the control gate, a negative voltage is applied to the drain region while the source region is floating. Furthermore, a negative voltage is applied to the substrate to program to the n-channel memory device by the channel Fowler-Nordheim tunneling effect. To erase the n-channel non-volatile memory device, a negative voltage is applied to the control gate, a positive voltage is applied to the drain region, and the source region is floating. Moreover, a positive voltage is applied to the substrate to erase the n-channel memory device using the channel Fowler-Nordheim tunneling effect.
Patent TW-529150-B (TW)
Title: Integrated circuit device used in electrostatic discharge (ESD) protection and the ESD protection circuit using the same
Inventor: KER MING-DOU
IPC: H01L23/58
Filed: 2002-02-06
Granted: 2003-04-21
Abstract: An ESD protection circuit suitable for use in between power source lines VDD and VSS of integrated circuit is disclosed in the present invention. The ESD protection circuit has an ESD detection circuit and a body-triggered lateral bipolar transistor. The lateral bipolar transistor is connected to the output terminal of the ESD detection circuit for providing the discharging path. The bipolar transistor is formed on a p-type substrate, which has the collector region connected to the power line VDD and the emitter region connected to the power line VSS. A separation region constituted by the p-type substrate is formed between the collector region and the emitter region, on which the base of the lateral bipolar transistor is formed without the formation of field oxide. Two p-type doped regions are respectively formed on outsides of the collector region and the emitter region, in which a shallow trench isolation structure is formed to separate these two doped-regions. During the operation, the lateral bipolar transistor is triggered from the output terminal of ESD detection circuit through p-type doped region so as to form a discharging path between the power lines VDD and VSS.
Patent TW-527652-B (TW)
Title: Manufacturing method of selection gate for the split gate flash memory cell and its structure
Inventor: JU WEN-DING
IPC: H01L21/8247
Filed: 2002-02-06
Granted: 2003-04-11
Abstract: In the invented manufacturing method of selection gate for the split gate flash memory cell, the selection gate is formed on the trench sidewall of the semiconductor substrate to shrink the lateral dimension of the selection gate and maintain the channel length. The manufacturing method of the selection gate at least contains the followings: forming a trench in the semiconductor substrate at one side of the floating gate structure; forming an intermediate polysilicon dielectric layer on the floating gate structure and on the trench sidewall; and forming a polysilicon spacer on the sidewall of the intermediate polysilicon dielectric layer for use as the selection gate. The split-gate type flash memory cell can generate the trajectory hot electrons to improve data write-in efficiency and decrease the write-in voltage.
Patent TW-592972-B (TW)
Title: Base structure for seamed papermaker's fabrics
Inventor: DAVENPORT FRANCIS L
IPC: D04H3/14
Filed: 2002-03-18
Granted: 2004-06-21
Abstract: An on-machine-seamable papermaker's fabric has a base structure which is a flattened array of a spirally wound multicomponent yarn. The flattened array has two layers, two sides, a length, a width and two widthwise edges. In each turn of the spiral winding, the multicomponent yarn has a substantially lengthwise orientation and is joined side-by-side to those adjacent thereto by a fusible thermoplastic material in each of the two layers. The multicomponent yarn forms seaming loops along the two widthwise edges. At least one layer of staple fiber material is needled into one of the two sides of the base structure and through the two layers.
Patent TW-559899-B (TW)
Title: Forming method for semiconductor layer and semiconductor element
Inventor: UDAGAWA TAKASHI
IPC: H01L21/18
Filed: 2002-05-17
Granted: 2003-11-01
Abstract: This invention aim at a solution to solve the problem that it has been unable to provide a withstanding environment type semiconductor which utilizes a boron phosphide (BP) and a BP family mixed crystals due to the fact that a method for forming a BP crystal layer which obtains a band gap with more or less 3eV has not yet disclosed. Using a vapor phase growth method to manufacture a semiconductor element which possesses a boron phosphide (BP) layer having a band gap of more than 2.8eV and less than 3.4eV at room temperature or a boron phosphide and is indicated by a general expression of BalphaAlbetaGagammaIn1-alpha-beta-gammaPdeltaAsepsilonN1-delta-epsilon (0 < alpha <= 1, 0 <= beta < 1, 0 <= gamma < 1, 0 < alpha+beta+gamma <= 1, 0 < delta <= 1, 0 <= epsilon < 1, 0 < delta+epsilon <=1).
Patent TW-558800-B (TW)
Title: Material for forming protective film
Inventor: KOSHIYAMA JUN
IPC: G03F7/11
Filed: 2002-05-17
Granted: 2003-10-21
Abstract: This invention provides a material for forming a protective film, which contains an organic solvent and a compound having at least two or more pieces of alicyclic structures.
Patent TW-531587-B (TW)
Title: A modified process of applying structure for spall walls
Inventor: KE DE-LIANG
IPC: E04B2/00
Filed: 2002-05-22
Granted: 2003-05-11
Abstract: A modified process for applying structure of spall walls includes following steps of: natural stone preparing, screening and selecting, stone washing, drying, glue applying, drying, material inputting and producing, heating, pressurized shaping, finished product cutting, examination, packing and storing. Processes mentioned above include the details of: applying glue evenly over stone grains after stone grains become dry; then putting the stone grains on a plastic sheet inside a tray after the glue becomes dry; sending the tray into a heater to heat and melt the glue thereof and make the glue stick to the plastic sheet; setting the tray in another machine for vacuuming and pressing processes to make the plastic sheet firmly adhere to one side of the stone grain; then cutting the product into proper sizes.
Patent TW-I222471-B (TW)
Title: Method for producing ultra-fine spinneret
Inventor: TZENG FAN-GEN
IPC: D01D4/02
Filed: 2002-05-23
Granted: 2004-10-21
Abstract: A method for producing an ultra-fine spinneret comprises: using a thick film photoresist to form a standing micro-structure on a substrate; using an electroplating process to form a metal plating layer surrounding the micro-structure; and using a subsequent processing to removing the photoresist and filling, thereby obtaining a precision micro-sized spinneret. Such a spinneret can have a unique structure with high aspect ratio, wear resistance, and multi-functions.
Patent TW-548700-B (TW)
Title: Method and apparatus for manufacturing a barrier layer of semiconductor device
Inventor: LIM BI-O
IPC: H01L21/285
Filed: 2002-06-28
Granted: 2003-08-21
Abstract: Disclosed is a method and an apparatus for manufacturing a barrier layer of semiconductor device. The disclosed comprises the steps of: forming an interlayer insulating layer having a contact hole on a semiconductor substrate; forming a Ti layer on the contact hole and on the interlayer insulating layer; and reacting the Ti layer with nitrogen radical to transform a part of the Ti layer into a TiN layer.
Patent TW-I302924-B (TW)
Inventor: MITSUTAKA SATO
IPC: C08L27/06
Filed: 2002-07-09
Granted: 2008-11-11
Abstract: Generation of air marks and flow marks is prevented when a vinyl chloride resin is molded into a sheet or the like. To a vinyl chloride resin is added a processing aid for a vinyl chloride resin comprising a copolymer composition containing, (A) 70 to 99 parts by weight of a copolymer obtained by polymerizing a monomer mixture comprising 50 to 99 % by weight of methyl methacrylate, 1 to 50 % by weight of an aromatic vinyl compound and 0 to 30 % by weight of another monomer copolymerizable with these components, said copolymer having a specific viscosity at 30 DEG C of 0.3 to 1.8 when 0.4 g of said copolymer is dissolved in 100 ml of toluene; and (B) 1 to 30 parts by weight of a copolymer obtained by polymerizing a monomer mixture comprising 0 to 60 % by weight of methyl methacrylate, 40 to 100 % by weight of methacrylic ester other than methyl methacrylate and/or 40 to 99 % by weight of acrylic ester, and 0 to 50 % by weight of another monomer copolymerizable with these components, the total amount of (A) and (B) being 100 parts by weight, wherein said copolymer composition has a specific viscosity at 30 DEG C of 0.3 to 2.0 when 0.4 g of said copolymer composition is dissolved in 100 ml of toluene:
Patent TW-552718-B (TW)
Title: Thin film transistor and matrix display device
Inventor: KAWASAKI MASASHI
IPC: H01L21/336
Filed: 2002-08-16
Granted: 2003-09-11
Abstract: In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiNx having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO2). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer. This keeps a crystalline characteristic of the semiconductor layer under a preferable condition in the vicinity of the interface between the second insulating film and the semiconductor layer. As a result, it is possible to realize a thin film transistor such that: a leak current level at an OFF area is low, and the mobility is high, and a switching characteristic is preferable. Thus, in the thin film transistor having a transparent semiconductor film, a TFT characteristic is improved.
Patent TW-583670-B (TW)
Title: Semiconductor memory device
Inventor: KOGA TSUYOSHI
IPC: H01L27/11
Filed: 2003-01-30
Granted: 2004-04-11
Abstract: A semiconductor memory device having as its main storage portion a capacitor storing charges as binary information and an access transistor controlling input/output of the charges to/from the capacitor, and eliminating the need for refresh, is obtained. The semiconductor memory device includes a capacitor with a storage node located above a semiconductor substrate and holding the charges corresponding to a logical level of stored binary information, an access transistor located on the semiconductor substrate surface and controlling input/output of the charges accumulated in the capacitor, and a latch circuit located on the semiconductor substrate and maintaining a potential of the capacitor storage node. At least one of circuit elements constituting the latch circuit is located above the access transistor.
Patent TW-586188-B (TW)
Title: Method of manufacturing semiconductor device
Inventor: MATSUMURA AKIRA
IPC: H01L21/8242
Filed: 2003-02-14
Granted: 2004-05-01
Abstract: A rough polysilicon film (10) located on the upper surface of an interlayer film (8) is removed by a CMP process, so that storage nodes (110a, 110b) and an embedded TEOS film are formed. The embedded TEOS film is removed concurrently with the interlayer film located in a memory cell region by etching. An opening end of a groove (8c), the upper surface of the embedded TEOS (11c) film and the upper surface of the interlayer film (8) are arranged on substantially the same plane. In the memory cell region and a peripheral circuit region, a substantially flat interlayer insulation film (15) is obtained. This solves the problems of a step, falling and the like in a semiconductor device including a capacitor element.
Patent TW-I288642-B (TW)
Title: Preparation of N1-(2'-pyridyl)-1,2-propanediamine sulfamic acid and its use in the synthesis of biologically active piperazines
Inventor: CHAN ANITA WAI-YIN
IPC: A61K31/4402
Filed: 2003-03-10
Granted: 2007-10-21
Abstract: A process for making an N1-(2'-pyridyl)-1,2-alkanediamine sulfamic acid of formula II by reacting a compound of formula I with NH2R', wherein R and R' are as defined in the specification. The invention also includes the compound of formula II, and optical isomers thereof. The compound of formula II is an intermediate useful for making chiral piperazine derivatives which are active at the 5-HT1A receptor.
Patent TW-591830-B (TW)
Title: Flat flexible circuit board connector
Inventor: CHIU HSIEN-YU
IPC: H01R13/639
Filed: 2003-05-20
Granted: 2004-06-11
Abstract: The present invention is a flat flexible circuit board connector with an open space. It allows the top side wall of a flexible circuit board connector to be formed by a movable top lid which can be lifted towards the back and cover back towards the front. To plug into a flexible circuit board, the movable top lid can be lifted towards the back to allow the plug terminal, used for the plug-in of the flexible circuit board, to expose in the open space of the flat flexible circuit board connector for easy plug-in of the flexible circuit board and good electric connection between the flexible circuit board and the plug terminal. Then, for easy operation, after covering the movable top lid back towards the front, the flexible circuit board is firmly inserted inside the flat flexible circuit board connector without any possibly loose connection. Besides, in order to enhance the functionality of the flat flexible circuit board connector, a metal shielding plate can be installed on the movable top lid for electromagnetic interference prevention.