baber/WOPTO huggingface dataset:
Patent JP-S5553584-A (JP)
Title: Motor driven typewriter for japanese language
Inventor: KOBAYASHI MINORU
IPC: B41J25/02
Filed: 1978-10-14
Abstract: PURPOSE: To properly align line ends, by typing characters in reverse-line direction while automatically adjusting the device by letting the feed of a platen correspond to the width of characters by mounting separate drive power sources to type-bar functioning and platen feed functioning and by forming a circuit in a shape that working order can be selected by means of a change-over switch.  
     CONSTITUTION: A circuit for controlling type-bar functioning and platen feed functioning is constituted so that both be worked by means of separate drive sources. A change-over switch is installed which can select the working order of these drive sources in before-and-after arbitrary order when printing. When printing instructions are issued locating the change-over switch at an inverse functioning typing position, a platen is first sent only by the width of the desired character, and the character is typed. Thus, the efficiency of the printing of Japanese inverse typing properly arranging line ends can remarkably be improved by jointly using this device with a character width automatic regulator. 
     COPYRIGHT: (C)1980,JPO&Japio
Patent JP-S616926-A (JP)
Title: Touch sensor
Inventor: KUWATA TAKESHI
IPC: H03K17/96
Filed: 1984-06-21
Abstract: PURPOSE:To decrease number of connections by using an electric capacitance of a potential detection means and a resistor of a touch electrode so as to detect the degree of deformation of a pulse signal propagated in the touch electrode and obtaining the contact position of the potential detecting means to the touch electrode. CONSTITUTION:A pulse signal generating means 2 is connected to the touch electrode 1 having a prescribed length where a distributed pattern of a resistor density in the lengthwise direction forms a prescribed pattern. A potential of the touch electrode 1 at an optional position is detected by the potential detecting means 3. A waveform deformation detecting means 5 detects the electric capacitance of the operator 4 or the degree of change in the electric capacitance of the potential detecting means 3 due to load in a pulse signal wave supplied to the detected touch electrode 1. A position operating means 6 calculates the lengthwise position on the touch electrode 1 depending on the degree of deformation of a pulse signal waveform. The calculated position information is outputted to other electric device from an output means 7.
Patent JP-H01296554-A (JP)
Title: Electron beam heat treatment
Inventor: SUGIYAMA NORIO
IPC: H01J37/063
Filed: 1988-05-24
Abstract: PURPOSE:To make the temperature drop gentle on the surface of a sample and prevent the distortion such as inner stress from being left on the surface of the sample by radiating and scanning an electron beam on the surface of the sample while tilting it in the scan direction. CONSTITUTION:An electron beam 2 from a cathode 1 is adjusted to be inclined by an angle theta in the scan direction. The electron beam 2 is scattered in the sample 3 and expanded in the lateral direction as before. Since the electron beam is inclined in the scan direction, the scattering in the sample 3 is toward the opposite direction to the scan direction. The temperature distribution on the surface of the sample 3 has a large hem in the opposite direction to the scan direction. The surface of the sample is gradually cooled after the radiation of the electron beam.
Patent JP-2000324103-A (JP)
Title: Meeting system and information storage medium
Inventor: KAMAKURA HIROSHI
IPC: H04L12/18
Filed: 1999-05-07
Abstract: PROBLEM TO BE SOLVED: To provide a meeting system that immediately reproduces a past meeting state in response to an instruction and to provide an information storage medium. SOLUTION: The meeting system is provided with a liquid crystal projector 200 that generates meeting data on the basis of distribution data distributed from tablets 410-1 to 410-4 as a plurality of input devices via an IEEE 1394 bus 300. The liquid crystal projector 200 stores the distribution data from each of the tablets 410-1 to 410-4 to a storage section 40 and reproduces meeting data for each of the tablets 410-1 to 410-4, that is, each of meeting participants in response to a reproduction instruction by each of the meeting participants.
Patent JP-S6150913-A (JP)
Inventor: RIBUKA BEITONAA
IPC: A61K8/00
Filed: 1985-06-11
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S5752352-A (JP)
Title: Armature for flat motor
Inventor: SAWABE MITSUO
IPC: H02K15/04
Filed: 1980-09-16
Abstract: PURPOSE:To improve heat radiating property while obtaining the flat motor which can freely select required performance by forming a boss section by molding an inner side section of a single coil and a connecting section of a commutator with resin. CONSTITUTION:Only the inner side sections 24 of the single coil and the connecting sections 25 are molded with resin. That is, the boss section 26 is shaped on an inner circumference of the armature in such a manner that the armature coil AE is placed on a flat plate, a ring-shaped formwork having a diameter in an extent that involves the inner side sections 24 is set, resin is poured onto the inner side sections 24 and the connecting sections 25 and the resin is cured. To connect the armature and a shaft 5, a rotor hub 28 mounted to a spline 27 of the shaft 5 is also molded integrally when molding the boss section 26. Accordingly, the heat radiating property can be improved, the armature is equal to the whole molding in strength, and the flat motor having various capability can easily be obtained.
Patent JP-H05327439-A (JP)
Title: Pulse amplifier
Inventor: IMAMURA MAKOTO
IPC: H03K17/04
Filed: 1992-05-20
Abstract: PURPOSE:To realize a pulse amplifier whose output voltage waveform is not affected by a capacitance of a static capacitor being a load capacitor. CONSTITUTION:A pulse amplifier 50a comprising a 1st transistor(TR) 1 whose base receives a signal voltage and a 2nd TR 2 whose base receives an inverted signal voltage via a differentiation circuit 3 and outputting an output voltage of the same waveform as the signal voltage is provided with a comparator 7 comparing the signal voltage with an output voltage of the pulse amplifier 50a and an adder circuit 8 adding an output voltage of the comparator 7 and an output voltage of the differentiation circuit 3 and controlling the 2nd TR 2 so that the TR 2 keeps flowing the current when an output signal is larger than the signal voltage based on the result of sum.
Patent JP-H11321343-A (JP)
Title: Structure of engine part of combine
Inventor: SATO TADAYOSHI
IPC: A01D41/12
Filed: 1998-05-11
Abstract: PROBLEM TO BE SOLVED: To prevent the air from a breather pipe from being carried to the driver's seat side by mounting a member capable of suppressing the dispersion of generated cooling air between a radiator in the upper part of a fan cover and an engine in a combine for generating the cooling air by a fan to cool a radiator. SOLUTION: In a combine for sending the outside air sucked through the opening part 23 of an engine cover 24 to a radiator 32 through a filter 31 to cool the radiator 32, this combine is provided with a baffle plate 33 for suppressing the dispersion of the outside air sucked by the fan 34 and passed through the radiator 32 upward or in the longitudinal direction of the machine body. The baffle plate 33 is formed in a structure of covering the clearance between the radiator 32 and a cylinder block 38 above the fan 34. Accordingly, the outside air (cold air) is effectively sent to the cylinder block 38 to improve the cooling effect. The outside air after cooling the cylinder block 38 and a silencer 36 is discharged out of the machine body.
Patent JP-H0422126-A (JP)
Title: Chemical vapor growth equipment
Inventor: YAMAGUCHI TORU
IPC: H01L21/31
Filed: 1990-05-17
Abstract: PURPOSE:To obtain a stable growth film, by arranging a carbureter of liquid source to be adjacent to a gas head for supplying gas to a semiconductor wafer while interposing a valve, and heating and retaining both of them at a constant temperature. CONSTITUTION:TEOS gas is made to flow in a gas head 1, and at the same time, mixed with O3 gas and a specified amount of carrier N2 gas which is made to flow from a carrier tube 7; the mixed gas is blown out from a gas blowout face 2 on a semiconductor wafer heated and kept at a film formation temperature; a film is formed on the semiconductor wafer, as the result of reaction between the TEOS gas and the O3 gas. When liquid TEOS B in a bubbling room 3 decreases in consequence of film formation, the liquid TEOS B is supplied from a feeding tube 9 by opening a valve 15. Since the gas head 1 and the bubbling room 3 are adjacent to each other while interposing a valve 21, both of them can be heated with a heater 4. Thereby piping between the gas head 1 and the bubbling room 3 and a heating means for the piping are unnecessitated, so that it can be prevented that the TEOS gas is liquified in the piping and the flow rate of the TEOS gas changes.
Patent JP-H02305462-A (JP)
Title: Manufacture of semiconductor integrated circuit
Inventor: TAKEDA KAZUO
IPC: H01L21/761
Filed: 1989-05-19
Abstract: PURPOSE:To improve a semiconductor integrated circuit of this design in degree of integration by a method wherein impurity is diffused providing a mask to an introduction hole on a predetermined diffusion resistance region, the mask is removed, and impurity is diffused through all introduction holes. CONSTITUTION:Introduction holes 34 and 32 are precisely, previously provided to an insulating film 25 corresponding to a predetermined diffusion resistance region 31 and a predetermined isolating layer 29 of a semiconductor layer 24, and the isolating region 29 is formed as providing a mask 35 to the hole 34 provided above the predetermined diffusion resistance region 31. The mask 35 is removed, and impurity is introduced through all the holes 32 and 34 to form the diffusion resistance region 31, whereby the forming position of the diffusion resistance region 31 can be determined by the hole previously and precisely formed. Therefore, the diffusion resistance region 31 can be lessened in deviation and margin conventionally provided for the deviation concerned. By this setup, a cell can be decreased in size, and moreover an integrated circuit of this design can be reduced in area by the detection of all the cells in area, so that a chip can be decreased in size and improved in degree of integration.
Patent JP-S62284568-A (JP)
Title: Laser beam printer
Inventor: ISHII HIROAKI
IPC: B41J3/00
Filed: 1986-06-02
Abstract: PURPOSE:To form the reproduced images of high quality by controlling the laser power of each laser unit at the time of the beam detect signal generation to the common certain constant value of the respective units. CONSTITUTION:Laser beams emitted by respective laser units 201C, 201M, 201Y, and 201BK are received in front of an image wiring position and beam detect signal generating units 112C, 112M, 112Y, and 112BK are scanned with the beam. The power of the emitted laser beams is determined by the value of a current conducted through a laser 107 and the current value is controlled with 8-bit digital data supplied from the port A of a CPU 103. The CPU 103 sends proper 8-bit data to a D/A converter 104 according to the input 8-bit data and a constant current circuit 105 controls the laser current based on the D/A converter 104 so as to obtain a stable image. Consequently, reproduced images of high quality are obtained.
Patent JP-S61286578-A (JP)
Title: Fuel-injection type multicylinder engine
Inventor: HASHIMOTO NOBORU
IPC: F02D3/00
Filed: 1985-06-12
Abstract: PURPOSE:To secure an optimum combustion state all the time, by leading assist air into the surrounding of a fuel injection stream out of the fuel injection valve installed in a suction passage, while constituting the assist air decreased or increased in an inversely proportional manner according to a variation of the air quantity to be led. CONSTITUTION:In case of an engine that an independent suction passage 3a to be interconnected to a combustion chamber 2 of each cylinder is branched off from the surge tank 7 installed at the downstream of a throttle valve 6 in a suction passage and a fuel injection valve 11 is set up in each cylinder 3a, there is provided with an assist air passage 14 which leads assist air into the vicinity of a nozzle part of each fuel injection valve 11. This assist air passage 14 is interconnected to a suction passage 3 at the upstream side of the throttle valve 6 via a main air passage 15. In addition, an auxiliary air passage 16 is branched off from the point midway in the assist air passage 14, and this passage 16 is connected to the suction passage 3a at the downstream side of the fuel injection valve 11, while in and around the branched part, there is provided with a control valve 17 which decreases the auxiliary air in an inversely proportional manner according to a variation of the assist air, side by side.
Patent JP-S61285772-A (JP)
Title: Semiconductor sensor
Inventor: YAMASHITA SHIGEAKI
IPC: H01L29/84
Filed: 1985-06-12
Abstract: PURPOSE:To obtain a semiconductor sensor, which can detect the flow rate and vibration of fluid, by cutting out parts, at which resistors are not provided, in a diaphragm, and providing through holes. CONSTITUTION:Single crystal silicon is etched by using anisotropic etching technology. A diaphragm 2 is formed at the central part of a base 1. Four diffused resistors 3a-3d are formed at central part 1a of the diaphragm and connected by aluminum wirings 4. Thus a bridge circuit B is formed. Both sides of the diaphragm 2 are cut out in rectangular forms, with a central part 2a, where the diffused resistors 3a-3d are formed, being made to remain. Two through holes 5 are provided. A flow-rate sensor, which is formed in this way, is attached to an attaching part 6b of a base body 6 having an inlet port 6a of a gas stream. The diaphragm 2 is arranged so as to face a gas flow pat at a right angle under the state the diaphragm is protected by a cap body 7. The central part 2a of the diaphragm 2 is bent by the gas stream when the gas passes the through holes 5, and strain is yielded in the diffused resistors 3a-3d.
Patent JP-S63295669-A (JP)
Title: Thermoplastic resin composition
Inventor: WATANABE NAOTOSHI
IPC: C08L101/00
Filed: 1987-05-27
Abstract: PURPOSE:To obtain the title composition which can be easily produced at low cost and has excellent vibration damping performance, good mechanical strength, good adhesion to metal etc., by mixing chlorinated polyethylene with an ethylene copolymer and a thermoplastic resin which can melt at a specified temperature. CONSTITUTION:A thermoplastic resin composition comprising chlorinated polyeth ylene (A) (particularly desirably, amorphous chlorinated polyethylene of a chlo rine content of 27-45wt.%), an ethylene copolymer (B) of at least ethylene with an alpha,beta-unsaturated dicarboxylic acid or its anhydride (desirably, maleic anhydride) and a a thermoplastic resin (C) which can melt at 200 deg.<= (e.g., ethyl ene polymer) wherein the proportion of component A to the total weight is 5-30wt.%, and the proportion of component B to the total component B and C is 3-40wt.%. This composition can be easily produced at low cost,and has excellent sound isolation effect and vibration effect, good moldability, excellent mechanical strengths such as impact strength and tensile strength and excellent adhesion to metal or other substances. Therefore, it is useful as a vibration- damping material for various materials which are sources of noises.
Patent JP-H06316250-A (JP)
Title: Drive circuit of igniter
Inventor: SAITO SHIGERU
IPC: B60R21/16
Filed: 1993-05-01
Abstract: PURPOSE:To ensure the ignition of a squib as well as to use an amount of limited electric power in an effective manner by stopping a power supply to an igniter from a power supply means if the size of an overcurrent detected by an overcurrent detecting means installed in a current supply line, comes to the specified value. CONSTITUTION:Two current detecting resistors 20 and 21 with a specified value of resistance each are connected to both grounding sides of squibs 13 and 12 in series, while both first and second overcurrent judging circuits 22 and 23 inputting the value of voltage to be generated at the nongrounding side, compre the electric potential, thereby varying the output into a high level as it is so judged that an overcurrent has flowed if the potential at the nongrounding side becomes larger as far as exceeding the reference potential. On the other hand, a microcomputer 26 selects the generating time of a trigger signal to be fed to two switching transistors 29 and 31, corresponding to the squib 12 or 13 where the over current flows, to a short time. With this transfer, such a possibility that it is one-sided to the one squib due to the overcurrent and thereby feeding is carried out of a backup condenser 5 is thus prevented from occurring.
Patent JP-S6021126-A (JP)
Title: Bender for metallic plate having rising part at side end
Inventor: MIYAMOTO NOBUO
IPC: B21D7/024
Filed: 1983-07-15
Abstract: PURPOSE:To provide a titled bender which prevents generation of strain in a rising part and face plate part by providing a press-grasping rod to the front end part of a curved base plate provided successively to the front end of a stand and providing a working roller which rolls on the press-grasping rod and the sandwiched metallic plate. CONSTITUTION:A metallic plate with the rising part 2 faced downward is placed on a stage plate 6 and is clamped and fixed by means of grasping bodies 7. When a working rod 24 is turned by turning a revolving shaft 21, a working roller 22 provided to the top end thereof is moved together with the rod 24 and rolls on a curved base plate 12. The metallic plate positioned between a press- grasping rod 20 and the base plate is forcibly curved and bent along the curved surface of the base plate 12 by the rolling of the roller 22 turned by the rod 24 and the movement of the rod 20. The deformation effect in the deformed curving of the rising part 2 is prevented and the generation of a wrinkle, etc. is suppressed according to such device.
Patent JP-S61287151-A (JP)
Title: Semiconductor device
Inventor: MAYUMI SHUICHI
IPC: H01L21/314
Filed: 1985-06-14
Abstract: PURPOSE:To prevent the generation of cracks and the disconnection of wirings, and to improve the reliability of a semiconductor device by forming an inter- layer insulating film in three layer structure of a silicon oxide film-a silicon nitride film-a silicon oxide film. CONSTITUTION:A lower layer Al wiring 3 is formed onto an inter-layer insulating film consisting of a PSG film 2 shaped so as to coat a circuit element on a silicon substrate 1, and an upper layer Al wiring 7 is formed onto the lower layer Al wiring 3 through inter-layer insulating films composed of three layer structure of a first layer PSG film 4, a second layer plasma silicon nitride film 5 and a third layer PSG film 6. A PSG film 8 and a plasma silicon nitride film 9 are shaped onto the upper layer Al wiring 7 as passivation films. Consequently, the lower layer and upper layer Al wirings 3, 7 are not brought into contact with the plasma silicon nitride film 5 having compressive stress, thus preventing the trouble of disconnection due to the pulling of the Al wiring. An intermediate layer in the inter-layer insulating films is composed of the plasma silicon nitride film, thus also obviating electrical leakage between the lower layer and upper layer Al wirings due to the cracks of the inter-layer insulating films.
Patent JP-H0311287-A (JP)
Title: Bottom discharge type low temperature crucible
Inventor: MARUSERU GARUNIE
IPC: H05B6/22
Filed: 1990-05-17
Abstract: PURPOSE: To protect a material being processed against contamination by employing a crucible adapted to be discharged through the bottom and consists of a conducting wall consisting of a plurality of hollow segments insulated electrically from each other and adapted to be traversed internally by a cooling fluid and which crucible is adapted to be placed inside an inductor and an aperture is provided in the bottom of the wall. CONSTITUTION: A closing means 4 comprising 12 hollow cooling segments is disposed in the opening 13 of a crucible 1 divided into 12 hollow cooling segments 2 surrounding the opening 3 and a space for a circular hole 5 is left in the center of the means 14. The crucible 1 is set in an inductor and each segment is cooled by a water circuit. When a material to be processed is introduced into the crucible, an AC current is fed to the inductor to fuse and stir the material. When the material is fused homogeneously and completely, the means 4 is moved quickly in the vertical direction at first and then sideward. Material flow is regulated by the magnitude of current being fed to the inductor and the material is floated when the magnitude is increased. When the magnitude is decreased gradually, floating state is suppressed gradually and the flow rate is increased. Consequently, fused material can be discharged quickly from the crucible without being contaminated.
Patent JP-S61287258-A (JP)
Title: Semiconductor memory device
Inventor: TSUCHIYA OSAMU
IPC: H01L21/8242
Filed: 1985-06-14
Abstract: PURPOSE:To reduce the area exclusive for a memory cell and to increase information holding time by composing capacity elements and MISFETs on a conductive layer of the same layer formed on an Si substrate. CONSTITUTION:A 2-layer structure mask of an SiO2 film 17 and an Si3N4 layer is formed on a P<-> type Si substrate 3, a fine groove is formed on a region A, an inner wall is coated with an SiO2 film 4, and the Si3N4 layer is separated. An N<+> type polysilicon layer 18 is superposed, anisotropically etched, and only the wall of the groove is allowed to remain. A window 11 is opened at the film 17, a polysilicon 19 is accumulated, removed only on a region B, and annealed to forma single crystal. A P<+> type channel stopper 23 and P<-> type and N<-> type wells 20, 21 are formed on the region B, and an SiO2 film 12 is formed on the region A together with a field oxide film 22. Then, the capacity electrode of an N<+> type polysilicon 7 is formed through a thin oxide film 6 on the groove, and coated with an SiO2 film 13. Thereafter, a gate insulating film 10 is formed, a threshold value is regulated, a gate electrode 2 is formed, a hole 15 is opened at an insulating film 14, and a data line 16 is attached. According to the construction, the occupying area of the cell is reduced, charge in a fine hole capacity is not exhausted out to the line 16 by an inverted layer in the substrate, and information holding time is increased.
Patent JP-S63293933-A (JP)
Title: Wire bonding method and wire bonding equipment
Inventor: NAKAJIMA MAKOTO
IPC: H01L21/60
Filed: 1987-05-27
Abstract: PURPOSE:To prevent the generation of cracks in silicon, an oxide film, etc., under a wire bonding pad, by turning a wire into a sphere in a reducing gas atmosphere at a high temperature. CONSTITUTION:The lower end of a wire 5 enters a reducing gas atmosphere formed by a gas exhausted from a tube 18. As the reducing gas atmosphere is formed by a reducing gas 21 heated by an electric heater 20, the temperature of the reducing gas atmosphere is kept in the range of 100-200 deg.C, or more preferably in the range of 150-200 deg.C. When a discharge electrode 16 approaches the lower end of the copper wire 5, a power source circuit 17 is closed, and a voltage is applied to the lower end of the wire 5 and a discharge electrode 16. Therefore, a discharge generates, and a ball 22 is melted and formed at the tip of the copper wire 5. As the ball 22 is formed in the reducing gas atmosphere at a high temperature, the enfolding of oxide is little and a pure ball is obtained.