baber/WOPTO huggingface dataset:
Patent TW-585891-B (TW)
Title: Scratch-resistant coating
Inventor: BIER PETER
IPC: C08J7/046
Filed: 2001-04-12
Granted: 2004-05-01
Abstract: The present invention concerns scratch-resistant coatings comprising a primer coat (P) adhering to a substrate to be coated and a scratch-resistant coat (S) adhering to the primer coat (P), whereby the primer coat (P) contains a cured epoxy resin obtainable from hardeners and multi-epoxy functional compounds, and whereby the scratch-resistant coat (S) is obtainable from hydrolysable silanes containing epoxy groups. The coatings according to the invention are particularly resistant to attack by water. The present invention further concerns products coated with these coatings.
Patent TW-490857-B (TW)
Title: Thin film transistor array substrate for liquid crystal display and method of fabricating same
Inventor: YOU CHUN-GI
IPC: H01L21/00
Filed: 2001-04-18
Granted: 2002-06-11
Abstract: A thin film transistor array substrate includes a substrate, a gate wire with a gate line and a gate electrode formed on the substrate, a gate insulating layer covering the gate wire, and a semiconductor pattern formed on the gate insulating layer. A data wire is formed on the gate insulating layer and the semiconductor pattern with a data line, and a source and a drain electrodes. The data wire bears a multiple-layered structure where a metallic layer and an intermetallic compound layer are present. A protective layer is formed on the data wire and the semiconductor pattern. A pixel electrode is formed on the protective layer while contacting the drain electrode through a contact hole.
Patent TW-493244-B (TW)
Title: Semiconductor device and method of manufacturing the same
Inventor: SHIOYA YOSHIMI
IPC: H01L23/52
Filed: 2001-05-01
Granted: 2002-07-01
Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si-O-Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.
Patent TW-500916-B (TW)
Title: Silicon pressure sensor and method for manufacturing the same
Inventor: SHIE JIN-SHOWN
IPC: G01L9/06
Filed: 2001-05-24
Granted: 2002-09-01
Abstract: The invention provides a silicon pressure sensor and a method for manufacturing the same. The silicon pressure sensor includes a pressure cavity and is constituted by a P-type chip with a tapered cavity and an N-type epitaxial layer on the P-type chip. The N-type epitaxial layer has a plurality of piezo-resistance sensing unit for sensing a pressure-caused deformation. The method for manufacturing the silicon pressure sensor comprises the steps of forming in the N-type epitaxial layer a plurality of deep holes reaching an underlying P-type chip; etching the P-type chip, by an anisotropic etching-stop technique, through the plurality of deep holes to form a taperedcavity in the P-type chip; and then coating an insulating material for sealing the plurality of deep holes. The silicon pressure sensor thus formed has an ability to sense a gauge pressure between its both ends.
Patent TW-507376-B (TW)
Title: Manufacturing process of heterojunction bipolar transistor
Inventor: CHI YOU-MING
IPC: H01L29/70
Filed: 2001-06-14
Granted: 2002-10-21
Abstract: A manufacturing process of heterojunction bipolar transistor (HBT) is disclosed, which comprises: providing a GaAs semi-insulating substrate; form the sub-collector layer, collector layer, base layer, InGaP layer and emitter layer; etch part of the emitter layer till the InGaP layer is exposed; utilize CMSI mask to etch the InGaP layer between etching the emitter layer and the base; then etch the base layer and the collector layer sequentially to fabricate HBT. The problem that the metal connection is broken in the postprocessing caused by the overhang effect in the well-known manufacturing method can be effectively solved by using CMSI mask to etch the InGaP layer. And thereby the yield rate and reliability of the product are enhanced.
Patent TW-495931-B (TW)
Title: Non-volatile semiconductor memory and its driving method
Inventor: TORII SATOSHI
IPC: H01L27/115
Filed: 2001-08-28
Granted: 2002-07-21
Abstract: First second impurity diffusion regions are disposed in partial surface layers of a semiconductor substrate and spaced apart by some distance. A gate electrode is formed above a channel region defined between the first and second impurity diffusion regions. A gate insulating film is disposed between the channel region and gate electrode. Of the gate insulating film, a portion thereof disposed at least in a partial area along the longitudinal direction of a path interconnecting the first and second impurity diffusion regions, having a lamination structure of a first insulating film, a charge trap film and a second insulating film sequentially stacked in this order. The charge trap film is made of insulating material easier to trap electrons than the first and second insulating films. A control circuit drains holes trapped in each film between the gate electrode and the channel region or at an interface between adjacent films, by applying a hole drain voltage to the gate electrode, the hole drain voltage being higher than a voltage applied to either the first or second impurity diffusion region.
Patent TW-535250-B (TW)
Title: Apparatus for mounting of semiconductor chips
Inventor: MANNHART EUGEN
IPC: H01L21/683
Filed: 2001-08-29
Granted: 2003-06-01
Abstract: An apparatus for the mounting of semiconductor chips comprises a bondhead (5) with a pick-up tool (6) with a longitudinal drill hole (9) to which vacuum can be applied for the gripping and transport of a semiconductor chip (7). To detect whether the pick-up tool (6) has gripped the semiconductor chip (7), a body (15) with a reflecting surface is arranged in the longitudinal drill hole (9) of the pick-up tool (6) which, when passing over the light source (10) on absence of the semiconductor chip (7) deflects light shining from underneath into the longitudinal drill hole (9) of the pick-up tool (6) into a horizontal plane (17). The pick-up tool (6) has locations which are pervious to the deflected light of the light source (10). At least one optical element (19; 19.1, 19.2) is arranged on the bondhead (5) which concentrates at least part of the deflected light emerging laterally from the pick-up tool (6) onto a photosensor (18).
Patent TW-519700-B (TW)
Title: Method of manufacturing a semiconductor device
Inventor: NAGAI YUKIHIRO
IPC: H01L27/108
Filed: 2001-09-11
Granted: 2003-02-01
Abstract: A method of manufacturing semiconductor device is provided which can minimize the thinning of a nitride layer in the planarization process and inhibit the peripheral area of the nitride layer from being excessively polished. The method of manufacturing semiconductor device includes the steps of: forming a nitride layer on a semiconductor substrate; patterning the nitride layer and etching the semiconductor substrate while masking with a pattern of the nitride layer to form a trench; depositing an oxide layer to fill the trench and cover the nitride layer; patterning a resist layer on the oxide layer; etching the oxide layer on the nitride layer; and planarizing the oxide layer, wherein the step of etching the oxide layer permits a thickness of the oxide layer to be left on the nitride layer.
Patent TW-517288-B (TW)
Title: Damascene-gate process for the fabrication of MOSFET devices
Inventor: BOYD DIANE CATHERINE
IPC: H01L21/28
Filed: 2001-09-25
Granted: 2003-01-11
Abstract: A sub-0.1 μm MOSFET device having minimum poly depletion, salicided source and drain junctions and very low sheet resistance poly-gates is provided utilizing a damascene-gate process wherein the source and drain implantation activation annealing and silicidation occurs in the presence of a dummy gate region which is thereafter removed and replaced with a polysilicon gate region.
Patent TW-538649-B (TW)
Title: Active matrix type display apparatus and active matrix type organic electroluminescent display apparatus
Inventor: YUMOTO AKIRA
IPC: G09F9/30
Filed: 2001-11-07
Granted: 2003-06-21
Abstract: When current written type pixel circuit is adopted, dada has to be written into each pixel according to the line sequence. In the invented active matrix type display apparatus, the current written type pixel circuit is disposed in a matrix shape to form the active matrix type display apparatus. The invention is featured with the followings. A data line driving apparatus 15 comprising m current driving circuits (CD)15-1 to 15-m, which are disposed corresponding to data lines 13-1 to 13-m, respectively is disposed. Once the data line driving circuit 15 maintains the image data (such as the brightness data in the example) and sends it to the data line 13-1 to 13-m, respectively the operation of writing driving image information for each pixel circuit 11 is then conducted through a current form.
Patent TW-583781-B (TW)
Title: Preparation method of polyvinyl alcohol-glass fiber cloth alkaline solid polymer electrolyte and its use
Inventor: YANG CHUN-CHEN
IPC: H01M10/0565
Filed: 2001-12-13
Granted: 2004-04-11
Abstract: This invention relates to a method for preparing a composite alkaline solid polymer electrolyte from the polyvinyl alcohol polymer, potassium hydroxide and water, the polymer electrolyte which is reinforced with glass-fiber cloth to increase the mechanical strength, thermal stability and electrochemical stability. The glass fiber cloth matrix provides a stable interface between the cathode and the anode, it can reduce the short circuit problem when the battery is discharge at high rate. The processes are controlled by molecular weight of PVA polymer, the sequence of feed-in reactants, the weight present of reactants, the reaction time, the reaction temperature, and the drying conditions, in which are under the specified conditions of relative humidity (RH), temperature and drying time. The resulting electrolyte exhibits the ionic conductivity of 0.15 S/cm at room temperature, and has high mechanical intensity and good electrochemical stability. This polymer electrolyte can replace the conventional PP non-woven fabric separator for primary and secondary alkaline batteries, metal-air battery, nickel-metal hydride battery, nickel-cadmium nickel-zinc battery, fuel cells and capacitors. The composite PVA-GF polymer electrolyte can be used to thin film alkaline batteries systems, it reduces the weight and thickness of battery. The energy and power densities of batteries can be significantly increased. The composite PVA-GF polymer electrolytes offer an another opportunity to make thin and lightweight of batteries for future 3C electronic products.
Patent TW-558428-B (TW)
Title: Self-contained viscous liquid dispenser
Inventor: LEWIS RICHARD P
IPC: A47K5/12
Filed: 2001-12-13
Granted: 2003-10-21
Abstract: A viscous liquid dispenser includes a housing that defines an internal liquid reservoir. A dispensing pump mechanism is disposed at least partially within the reservoir and has a delivery end extending out of the reservoir. A mounting mechanism is configured as an integral component of the housing and provides the dispenser with the ability to be detachable connected to complimentary mounting structure on a wall surface. A unique dispensing pump mechanism is also provided for use with any manner of viscous liquid dispenser.
Patent TW-I254212-B (TW)
Title: Electronic book data delivery apparatus, electronic book device
Inventor: MURATA YOSHIYUKI
IPC: G06F17/30
Filed: 2001-12-26
Granted: 2006-05-01
Abstract: An electronic book device receives from an external delivery source book data representing the contents of a book, a reciter images, for example, of famous persons who read aloud the contents of the book based on the received book data, and the corresponding reciter voice data, and then displays the received book data and reciter images on the display. A user views the received book data and reciter images displayed on the display and causes the reciter images to read the book data aloud in voices represented by the reciter voice data.
Patent TW-I268948-B (TW)
Title: Polyester compositions of low residual aldehyde content
Inventor: ANDREWS STEPHEN MARK
IPC: C08K5/15
Filed: 2001-12-27
Granted: 2006-12-21
Abstract: A mixture of a polyester, such as poly(ethylene terephthalate) PET, and an additive combination, when extrusion compounded exhibits a lower residual acetaldehyde content than does PET alone when similarly treated. The additive combination comprises compounds selected from at least two groups wherein the groups are (i) poly(vinyl alcohol) or ethylene/vinyl alcohol copolymer, (ii) polyhydric alcohols and (iii) polyacrylamide, polymethacrylamide or copolymer of acrylamide or methacrylamide. The invention pertains to any polyester used in the manufacture of bottles or containers which in turn are used to store consumer materials, especially food, beverages and most especially water.
Patent TW-550541-B (TW)
Title: Speech encoding apparatus, speech encoding method, speech decoding apparatus, and speech decoding method
Inventor: YAMAURA TADASHI
IPC: G10L19/16
Filed: 2002-02-25
Granted: 2003-09-01
Abstract: The present invention comprises: first periodicity providing means for emphasizing periodicity of a fixed code vector output from at least one fixed excitation code book by use of a first periodicity emphasis coefficient adaptively determined based on a predetermined rule; and second periodicity providing means for emphasizing periodicity of a fixed code vector output from at least one fixed excitation code book by use of a predetermined second periodicity emphasis coefficient.
Patent TW-588143-B (TW)
Title: Screw type vacuum pump
Inventor: YOSHIMURA MASASHI
IPC: F04C18/16
Filed: 2002-02-25
Granted: 2004-05-21
Abstract: To attain energy saving, to prevent a temperature rise, and to reduce exhausting time in a vacuum pump. A screw type vacuum pump 1 includes a pair of screw rotors 3, 4 which are engaged with each other and rotatably contained in a casing 2, and is adapted to exhaust gas in an axial direction. A pair of the screw rotors are provided with three types of spiral blades having different theoretical displacements sequentially in an axial direction. A space between a first type of the spiral blade 29 and a second type of the spiral blade 30 and a space between the second type of the spiral blade 30 and a third type of the spiral blade 31 are connected via check valves 12, 13 to a bypass pipe 14 leading to a discharge side. Concerning the displacements of the three types of the spiral blades, ratio in an amount of the gas between a first step 7 and a second step 8 is defined to be about 1.4, ration in an amount of the gas between the second step 8 and a third step 9 is defined to be about 1.4, and ratio in an amount of the gas between the first step and the third step is defined to be about 2. After the gas has been compressed to substantially a half of the gas in the first step, a discharge port 6a is opened to exhaust the gas.
Patent TW-524941-B (TW)
Title: Power transmission
Inventor: OMATOI YASUSHI
IPC: B60W10/06
Filed: 2002-04-09
Granted: 2003-03-21
Abstract: A power transmission comprises a forward power transfer pass, a reverse power transfer pass, a hydraulic forward clutch 30, and a hydraulic reverse brake 25. The forward power transfer pass, which is selectively established by the forward clutch 30, transmits the rotational driving force of an engine as forward drive rotation, and the reverse power transfer pass, which is established by the reverse brake 25, transmits the rotational driving force of the engine as reverse drive rotation. While the forward clutch 30 is not engaged, so the forward power transfer pass is discharged, an engine-output controller 50 operates to restrict the rotational speed of the engine below a predetermined rotational speed.
Patent TW-531851-B (TW)
Title: Method of forming a rugged polysilicon layer on a semiconductor substrate
Inventor: LIU YONG
IPC: H01L21/8242
Filed: 2002-04-23
Granted: 2003-05-11
Abstract: The present invention provides a method of forming a rugged polysilicon layer on a semiconductor substrate. Firstly, a polysilicon base layer is formed on the semiconductor substrate, then a thin chemical oxide layer is formed on the polysilicon base layer by using an oxidizer, the thin chemical oxide layer is processed by using silicon or argon sputtering method and secondly, a rugged polysilicon layer is grown on the surface of the thin chemical oxide layer.
Patent TW-I269525-B (TW)
Title: Surface acoustic wave element and manufacturing method therefor
Inventor: WATANABE HIROKI
IPC: H01L21/60
Filed: 2002-06-19
Granted: 2006-12-21
Abstract: To provide a surface acoustic wave device employing an inexpensive flip chip technique, which is capable of reducing an ohmic loss by reducing an electrode resistance and operates at a high-frequency band. In the surface acoustic wave device, in which a surface acoustic wave element is bonded to a package by flip-chip technique, the surface acoustic wave element 14 is provided with an IDT electrode 3, bus bar electrodes 4, 5, reflector electrodes 6, 7, routed electrode pads 8, 9, and electrode pads 10, 11 which are formed on a piezoelectric substrate 2. In this device, conductive films Xb, Xc which are defined as a first metal film are formed on the pads 10, 11, and conductive films Xb, Xc which are defined as a second metal film are also formed on at least one of the electrodes 4, 5 and the electrodes 8, 9.
Patent TW-564185-B (TW)
Title: Method and apparatus of separating solution and desalination seawater based on multi-stage vacuum distillation, cooling and freezing process
Inventor: JOU JENG-MING
IPC: B01D3/06
Filed: 2002-10-15
Granted: 2003-12-01
Abstract: Disclosed is a method and apparatus of separating solution and desalination seawater by multi-stage vacuum distillation, cooling and freezing processes, comprising: a multi-stage vacuum distillation device, a multi-stage vacuum cooling device and a multi-stage vacuum freezing device. Under the initial condition, the solution is separated by means of isothermal distillation, siphon vacuum freezing, passing of solution and regeneration of thermal circulated solvent. The temperature of the vacuum distillation is dependent on the temperature gradients of the thermal circulation solution, subjecting separation of the solution into a multi-stage vacuum distillation process. A certain amount of energy is recovered for repeated use. The temperature of the thermal circulation solution discharged from the last stage is reduced to increase the number of the stages of vacuum distillation process. Hence, the multi-stage vacuum cooling and multi-stage vacuum freezing processes assist in the realization of the multi-stage vacuum distillation process to maintain balance of the thermal circulation between distillation and freezing processes. The multi-stage vacuum cooling freezes the solution by means of the vacuum distillation and cooling effects, so as to serve as the low temperature solution of the multi-stage vacuum freezing process. The energy used in the multi-stage vacuum freezing process for melting frozen ice crystals are originated from the steam generated by multi-stage vacuum distillation and multi-stage vacuum cooling processes. The low temperature thick solution and the molten ice crystals generated by the multi-stage vacuum freezing process serve to reduce the temperature of the thermal circulation solution discharged from the last stage of the multi-stage vacuum distillation process. Hence, the method of separating solution, by adopting multi-stage vacuum distillation, multi-stage vacuum cooling and multi-stage vacuum freezing processes serve as a method for desalinating seawater and condensing solute.
Patent TW-I225735-B (TW)
Title: Insertion sorter
Inventor: BUCHERT RYAN SAMUEL
IPC: H04J3/04
Filed: 2002-12-27
Granted: 2004-12-21
Abstract: An insertion sorter circuit and method are provided which are particularly useful for sorting channel response values of a communication signal. The sorter circuit includes a series of sorter elements which each have a register. The circuit is configured to cascade values downwardly when one register receives a greater value than it has stored, which value is not greater than the value stored in any upstream register. At the end of processing the values, the most significant values are stored in the registers, the sum of which are the channel power estimate. The channel noise variance is obtainable by applying a system dependent scaling factor to the sum of the least significant values processed.
Patent TW-I222559-B (TW)
Title: Furnace throughput monitoring system and operation method thereof
Inventor: HSIEH CHIUNG-FANG
IPC: H01L21/22
Filed: 2003-06-03
Granted: 2004-10-21
Abstract: A furnace throughput monitoring system and operation method thereof is provided. The furnace throughput monitoring system compares a real throughput data obtained from the furnace and a standard furnace throughput, and therefore can be a basis to improve process.
Patent TW-I267844-B (TW)
Title: Silver-reactive metal alloys for optical data storage and recordable storage media containing same
Inventor: LICHTENBERGER HEINER
IPC: C22C5/08
Filed: 2003-06-23
Granted: 2006-12-01
Abstract: An optical data recording and storage medium that includes a reflective layer formed from a silver alloy that contains, in addition to silver, about 0.1 to about 4.0 wt.%, based on the total weight of alloy, of samarium (Sm).
Patent TW-I222679-B (TW)
Title: Method for forming a deep trench capacitor buried plate
Inventor: CHANG CHIH-HAN
IPC: H01L21/28
Filed: 2003-06-25
Granted: 2004-10-21
Abstract: A method for forming a deep trench capacitor buried plate. A substrate having a pad oxide and a pad nitride is provided. A deep trench is formed in the substrate. A doped silicate film is deposited on a sidewall of the deep trench. A sacrificial layer is deposited in the deep trench, and etched back to expose parts of the doped silicate film. Then, an etching process is performed to remove the exposed doped silicate film and parts of the pad oxide for forming a recess. The sacrificial layer is removed. A silicon nitride layer is deposited to fill the recess and to cover the doped silicate film. Finally, a thermal oxidation process is performed to form a doped ion region. The silicon nitride layer is removed. The doped silicate film is removed.