baber/WOPTO huggingface dataset:
Patent TW-533600-B (TW)
Title: A thin film transistor array pane having a mark indication laser irradiation point
Inventor: JUN SAHNG-IK
IPC: G09F9/00
Filed: 2001-11-05
Granted: 2003-05-21
Abstract: A thin film transistor array substrate includes an insulating substrate, and gate lines formed on the substrate, storage electrode lines and storage electrodes are also formed on the substrate. Data lines cross over the gate lines and the storage electrode lines. The data lines are electrically insulated from the gate lines and the storage electrode lines. Thin film transistors are connected to the data lines and the gate lines, and pixel electrodes are connected to the thin film transistors. Bridges are formed at the same plane as the pixel electrodes while interconnecting the storage electrode lines and the storage electrodes placed at both sides of the gate lines. The storage electrode lines and the storage electrodes have protrusions or grooves placed close to the bridges to indicate the locations of laser illumination.
Patent TW-516212-B (TW)
Title: Fabrication method of the electronic passive device of semiconductor ceramic chip type
Inventor: CHIANG CHIH-BIN
IPC: H01L27/01
Filed: 2001-11-06
Granted: 2003-01-01
Abstract: A fabrication method of the electronic passive device of semiconductor ceramic chip type comprises the following steps: first, individually obtaining precise weight for the composition dosage of the constituent material for the complete characteristics of the recipe according to the functional feature of the objective product, mixing, stirring, baking, sintering until reducing the powder particles, disposing it along with proper amount of organic binder into a sealable, cleaned container for continuous mixing and grinding so that the powder can become homogeneously fine particles completely; The paste-like flowing slurry made with high tensile strength is injected into a storage tank suspended at a height suitable for the film-making operation by inputting a predetermined gas pressure, which has a device structure of ""adjustable film-forming cut opening"" originally installed on the bottom of the storage tank; placing the uniform, green compact film made with firm extensive property evenly on the carrying plate whose surface is pasted with uniform thickness of thin silicone plate, based on the originally defined film layer; directly aligning, stacking to form single-body chip type, or fixing sequentially on the surface of a specific machine to print inner electrode on the opposite ends (or equidistant parallel to the opposite ends) individual units of the chip in a alternate and fine manner; forming a multi-layered chip type, array chip type large-sized square raw claybrick by alternately aligning and stacking; after solidified, cutting, debindering by high temperature, sintering to achieve densification and attaching terminal electrodes by high temperature sintering; and, therefore, obtaining chip product with light-weight, thin, short and small features and precise, microscopic dimension.
Patent TW-I244251-B (TW)
Title: Control method and apparatus for electronic power regulator
Inventor: BAI FU-SHENG
IPC: H02J3/12
Filed: 2001-11-19
Granted: 2005-11-21
Abstract: The present invention provides a control method and apparatus of electronic power regulator, applied in an electronic power regulator. The electronic type power regulator includes a DC voltage, a DC/DC converter and an electrical energy storage device. When input voltage or output voltage is fluctuated, an electrical energy converter is used to switch the electrical energy of the DC voltage via an output switch circuit for output, so as to provide a voltage for stabilizing the output voltage. Further, electrical energy of the DC voltage is employed to charge the electrical energy storage device via the DC/DC converter. When the input voltage is abnormal or interrupted, the electrical energy storage device provides electrical energy for being converted by the DC/DC converter to replenish the insufficient DC voltage. The switching control method includes the following steps: (a) making the voltage have a phase difference from the input voltage; and (b) making the product value between the voltage and an output current of the output terminal become a positive value.
Patent TW-594084-B (TW)
Title: Process for fabricating an optical switch, optical switch obtained by said process and matrix of such switches
Inventor: HELIN PHILIPPE
IPC: G02B6/35
Filed: 2001-11-27
Granted: 2004-06-21
Abstract: Process for fabricating an optical switch (1) comprising: an alignment structure (2) comprising several grooves (3, 4) made on the face (10) of a silicon-on-insulator (SOI) substrate (9), each groove (3, 4) being intended to house an optical fiber capable of emitting a light beam; a reflecting structure (6) capable of moving between two positions, namely: a reflection position, in which the reflecting structure (6) is placed so as to redirect the optical beam coming from a first optical fiber (45) toward a second optical fiber (46); a transmission position, in which the reflecting structure (6) is placed in order to allow the beam (45) from the first optical fiber (46) to continue to propagate in its initial direction; characterized in that it includes several successive etching steps, namely: a dry anisotropic etching step carried out on the substrate, making it possible to define the overall shape (17) of the reflecting structure (6); a subsequent wet etching step, making it possible both to define the final shape of the reflecting structure (6) and to define the alignment structure (2); an etching step carried out on that face of the substrate on the opposite side from the reflecting structure, making it possible to define the shape of the deformable regions connecting the reflecting structure to the rest of the substrate; a final step of removing the silicon dioxide layer, making it possible to reveal the reflecting structure.
Patent TW-527746-B (TW)
Title: Direct methanol fuel cell including integrated flow field and method of fabrication
Inventor: BOSTAPH JOSEPH W
IPC: H01M8/24
Filed: 2001-11-30
Granted: 2003-04-11
Abstract: A fuel cell device and method of forming the fuel cell device including a base portion, formed of a singular body, and having a major surface. At least one fuel cell membrane electrode assembly formed on the major surface of the base portion. A fluid supply channel including a mixing chamber is defined in the base portion and communicating with the fuel cell membrane electrode assembly for supplying a fuel-bearing fluid to the membrane electrode assembly. An exhaust channel is defined in the base portion and communicating with the membrane electrode. A multi-dimensional fuel flow field is defined in the multi-layer base portion and in communication with the fluid supply channel, the membrane electrode assembly and the exhaust channel. The membrane electrode assembly and the cooperating fluid supply channel, multi-dimensional fuel flow field, and cooperating exhaust channel forming a single fuel cell assembly.
Patent TW-585889-B (TW)
Title: An extruded and drawn fiber and an extruded and drawn multicomponent fiber
Inventor: MENNING BRUCE A
IPC: C08L25/04
Filed: 2001-12-05
Granted: 2004-05-01
Abstract: Thermoplastic compositions particularly adapted for use in preparing extruded fibers and films for carpets, rugs, woven fabrics, non-woven or spun-bonded fabrics, knit fabrics, garments, laminates, constructions, or other applications and a method for the formation thereof. An extruded and drawn fiber comprising a thermoplastic polymeric composition comprising: (a) from 76 to 97 percent by weight of a first thermoplastic polymer comprising a polyamide or copolyamide having a crystallization temperature, Tc, greater than 160 DEG C; (b) from 24 to 3 percent by weight of a second thermoplastic polymer comprising a polyvinylidene aromatic polymer having isotactic or syndiotactic stereostructure and a crystallization temperature, Tc', and (c) optionally, a compatibilizer for (a) and (b),wherein said percentages are based on the sum of (a) and (b), and wherein Tc is at least 5 DEG C less than Tc'.
Patent TW-521052-B (TW)
Title: Air bag gas generator and air bag device
Inventor: MIYAJI KATSUTO
IPC: B60R21/26
Filed: 2001-12-27
Granted: 2003-02-21
Abstract: The present invention relates to an air bag gas generator with simple construction which in the initial operation stage is operated within its most possible capability not to give the passengers any impact, after that, the gas pressure increases rapidly to give the passengers the assured protection. In the air bag gas generator, the inner tube member is provided in the housing, and it is divides into the ignition device reception chamber and the combustion chamber, meanwhile, a plurality of the fire transmission holes are provided on the surrounding surface of the inner tube member to connect the two chambers. The plurality of the fire transmission holes are formed in a range in which the distance from the end portion of the said inner tube member is less than 30% of the length in the axial direction of the inner tube member. A gas generator is provided in which even the gas generation agent with poor ignition quality can be used. In addition, even when using this sort of gas generation agent, it can expedite sufficient operation functions in the initial phase.
Patent TW-504723-B (TW)
Title: A PDP manufacturing method, an aging process performed on a PDP and a PDP display
Inventor: KADO HIROYUKI
IPC: H01J17/49
Filed: 1999-06-25
Granted: 2002-10-01
Abstract: The object of this invention is to provide a plasma display panel in which an aging process essential to the manufacturing process generates minimal phosphor deterioration, enabling a relatively high luminous efficiency and high quality color production to be produced. To achieve this object, the aging process takes place while gas generated inside the panel is evacuated. Alternatively, after completion of the aging process, the phosphor of the whole panel is heated to restore heat deterioration.
Patent TW-566033-B (TW)
Title: Optical carriage of scanner and method for the same
Inventor: CHEN TSUNG-YING
IPC: H04N1/04
Filed: 2001-12-28
Granted: 2003-12-11
Abstract: An optical carriage of scanner has a lens assembly and a device assembly, the lens assembly has a mirror mount, some lens holder, and some supporters, and the device assembly has a chassis. In this invention, the lens assembly and the device assembly are mechanically connected after being separately formed. Further, to ensure correct shape of these lens holders and these supporters, they could be formed by metal punch, plastic ejection, or plastic processing.
Patent TW-521219-B (TW)
Title: Method and system for English test and achievement evaluation
Inventor: WU DUNG-YUE
IPC: G06F13/00
Filed: 2001-12-28
Granted: 2003-02-21
Abstract: A method and system for English test and achievement evaluation is disclosed, which includes: a course database, a control unit, a memory unit, a display unit, an input unit, and a storage medium. The method of English test and achievement evaluation includes the following steps: randomly extracting a plurality of English words, a plurality of English phonetic symbols, a plurality of English phrases, a plurality of English sample sentences, and the corresponding Chinese explanation by a control unit to generate a plurality of test problems and a plurality of test answers; then, the user can input the plurality of answers of the plurality of test problems; then, the control unit will individually compare the plurality of answers inputted by the user to see if they are the same as the plurality of test answers; and, generating a test achievement from the comparison result; finally, generating a progressive diagram of all of the test achievement.
Patent TW-548622-B (TW)
Title: Driving method of passive organic light-emitting diode display
Inventor: LIN YUAN-JIE
IPC: G09G3/32
Filed: 2001-12-31
Granted: 2003-08-21
Abstract: The present invention provides a driving method of passive organic light-emitting diode (OLED) display, which operates the driving circuit of scanning line and data line driving circuit by circuit design for proceeding the following steps: firstly, open-circuit all scanning lines and all data lines with the scanning line driving chip and data line driving chip; connect the scanning line and the scanning line driving chip synchronously when the scanning line driving chip supplies a scanning signal to a scanning line; open-circuit the scanning line and the scanning line driving chip at the instant when the scanning line signal stops; the scanning line driving chip will supply the other scanning signal to the other scanning line after a predetermined delay time and connect the other scanning line with the scanning line driving chip synchronously; finally, open-circuit the other scanning line with the scanning line driving chip at the instant when the other scanning line signal stops. The present invention repeats executing the said connection-open-circuit-delay steps according to the scanning way of the scanning line driving chip until scanning operations to all scanning lines are completed.
Patent TW-I233634-B (TW)
Title: Method for forming SiON layer on SiN layer
Inventor: FU HUAN-SUNG
IPC: H01L21/18
Filed: 2002-01-02
Granted: 2005-06-01
Abstract: A method for forming a SiON layer on a SiN layer is used to deposit a SiON layer and a SiN layer on the same reaction chamber. The method comprises: introducing NH3 and SiH2Cl2 into a reaction chamber and using a low pressure chemical vapor phase deposition method to deposit a SiN layer on a chip; upon completion of the formation of the SiN layer, introducing N2O into the reaction chamber and using a low pressure chemical vapor phase deposition method to deposit a SiON layer on the SiN layer.
Patent TW-594993-B (TW)
Title: Semiconductor device and manufacturing process therefor
Inventor: YOSHINORI HINO
IPC: H01L23/522
Filed: 2002-01-30
Granted: 2004-06-21
Abstract: A semiconductor device has a transistor formed on the semiconductor substrate thereof. The device includes a low dopant source-drain layer 26 formed in semiconductor substrate 21, a high dopant source-drain layer30 within the source-drain layer 26, a gate electrode 38E formed on the substrate 21 with a gate oxide film 25 interposed therebetween, a P-body layer 32 underlying the gate electrode 38E to form a channel positioned between said source-drain layers 26. 30, a plurality of arrays of plug contacts 47 contacting said source-drain 30, and source-drain electrodes connected to said source-drain layer 30 through the contacts of said plug contacts 47. The semiconductor device has via holes 61 in an interlayer insulation film 55 covering a lower circuits (two layers) 59, in the region other than the regions underneath the gold bump electrodes 63 in the pad region.
Patent TW-533534-B (TW)
Title: Manufacturing method of interpoly dielectric layer
Inventor: JANG GUO-HUA
IPC: H01L21/314
Filed: 2002-02-01
Granted: 2003-05-21
Abstract: A manufacturing method of interpoly dielectric layer is disclosed. Firstly, a substrate on which a first polysilicon layer is formed already is provided. Then, an interpoly dielectric layer is formed on the first polysilicon layer, and the method to form the interpoly dielectric layer uses Ar/O2/NH3 plasma, Kr/O2/NH3 plasma, Ar/O2 or Kr/O2 plasma. Then, a second polysilicon layer on the interpoly dielectric layer is formed.
Patent TW-523914-B (TW)
Title: Dual metal gate CMOS devices and method for making the same
Inventor: MA YANJUN
IPC: H01L29/49
Filed: 2002-03-25
Granted: 2003-03-11
Abstract: A method of fabricating a dual metal gate CMOS includes forming a gate oxide in a gate region and depositing a place-holder gate in each of a n-well and p-well; removing the place-holder gate and gate oxide; depositing a high-k dielectric in the gate region; depositing a first metal in the gate region of the p-well; depositing a second metal in the gate region of each of the n-well and p-well; and insulating and metallizing a structure obtained by above-described steps. A dual metal gate CMOS of the invention includes PMOS transistor and a NMOS transistor. In the NMOS, a gate includes a high-k cup, a first metal cup formed in the high-k cup, and a second metal gate formed in the first metal cup. In the PMOS, a gate includes a high-k cup and a second metal gate formed in the high-k cup.
Patent TW-544866-B (TW)
Title: Fabrication method for a mask read only memory device
Inventor: CHANG YAO-WEN
IPC: H01L27/112
Filed: 2002-05-06
Granted: 2003-08-01
Abstract: A mask ROM and a fabrication method thereof are described. The method includes forming a buried drain region in the substrate and forming a gate oxide layer on the substrate. A patterned double layer structure dielectric layer, which is perpendicular to the direction of the buried drain region, is then formed on the gate oxide layer and on the double layer structure dielectric layer to form a plurality of code memory cells. The code memory cells that comprise the double layer structure dielectric layer correspond to the logic state of ""0"", while the memory cells that do not comprise the double layer structure dielectric layer correspond to the logic state of ""1"".
Patent TW-542799-B (TW)
Title: System for recuperating vehicular inertia energy
Inventor: LI GUO-CHING
IPC: B60K8/00
Filed: 2002-05-03
Granted: 2003-07-21
Abstract: This invention relates to a system for recuperating vehicular inertia energy, particular to one for conserving energy, improving safety, comprising: a driving unit provided on a transmission shaft of a vehicle, the driving unit meshing a with clutch capable of actuating a power generator, such that the inertia energy may be stored in a power storage barrel in term of pressurized air by means of the power generator. When the user again steps on the accelerator pedal to start the vehicle, the clutch and an actuating device meshing with the driving unit may serve to actuate the vehicular transmission shaft. By adopting such a design, the inertia energy of the vehicle during braking may be stored to assist in driving the vehicle to thereby reduce energy consumption, shorten the braking distance, and effectively improve safety in driving.
Patent TW-582008-B (TW)
Title: Methods and systems for measuring display attributes of a FED
Inventor: DUNPHY JAMES C
IPC: G09G3/20
Filed: 2002-06-27
Granted: 2004-04-01
Abstract: Method for compensating for brightness variations in a field emission device. In one embodiment, a method and system are described for measuring the relative brightness of rows of a field emission display (FED) device, storing information representing the measured brightness into a correction table and using the correction table to provide uniform row brightness in the display by adjusting row voltages and/or row on-time periods. A special measurement process is described for providing accurate current measurements on the rows. This embodiment compensates for brightness variations of the rows, e.g., for rows near the spacer walls. In another embodiment, a periodic signal, e.g., a high frequency noise signal, is added to the row on-time pulse in order to camouflage brightness variations in the rows near the spacer walls. In another embodiment, the area under the row on-time pulse is adjusted to provide row-by-row brightness compensation based on correction values stored in a memory resident correction table. In another embodiment, the brightness of each row is measured and compiled into a data profile for the FED. The data profile is used to control cathode burn-in processes so that brightness variations are corrected by physically altering the characteristics of the emitters of the rows.
Patent TW-I245224-B (TW)
Title: Scan module for use in a reader for electro-optically reading indicia and arrangement for centering an oscillatable scan mirror in a rest position in a reader for electro-optically reading indicia
Inventor: BARKAN EDWARD
IPC: G06K7/10
Filed: 2002-07-03
Granted: 2005-12-11
Abstract: A non-retroreflective compact scan module in an electro-optical reader includes a laser light source, a photosensor and an electromagnetic coil mounted at one surface of a printed circuit board. The laser emits a laser beam perpendicular to the board, and is re-directed to an oscillatable scan mirror which is magnetically centered to a rest position when the coil is de-energized. Electrical circuitry is mounted at an opposite surface of the board.
Patent TW-548736-B (TW)
Title: Semiconductor device fabricating method and treating liquid
Inventor: AOKI HIDEMITSU
IPC: H01L21/306
Filed: 2002-07-09
Granted: 2003-08-21
Abstract: There are provided a semiconductor device fabricating method for forming a wiring layer on a semiconductor substrate, followed by cleaning, which may prevent elution and oxidation of the wiring layer, and a treating liquid used in the fabricating method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the interlayer film to expose the surface of the Cu wiring are formed in a plasma atmosphere. IPA is sprayed to the semiconductor device, and then, an organic release process is performed thereto with an amine solvent to remove an etching residue. The semiconductor device is rinsed with the IPA again to remove the remaining amine, and then is cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure water or CO2 water and is dried.
Patent TW-583276-B (TW)
Title: Novel synthesis of water-soluble phthalocyanines by microwave irradiation
Inventor: HU ANDREW TEH
IPC: C09B47/16
Filed: 2002-07-23
Granted: 2004-04-11
Abstract: Two different kinds of starting materials, i.e. 4-sulfophthalic acid and metal-free water-soluble phthalocyanine have been chosen for preparation of water-soluble phthalocyanines. Microwave irradiation has been adopted to prepare water-soluble phthalocyanines. This unique preparation method turns out to be facile, convenient, and effective in comparison with conventional wet preparation method. Their structures are given below, wherein R represents sulfonated group or metal salt of sulfonated group such as (SO3Na), M represents some kinds of metal/non-metal, such as Zn, Cu, Mg, Al, Co, La, Tb, Ce, Dy, Lu or non-metals such as H atom.
Patent TW-592969-B (TW)
Title: Method for making metal plate with thermal-adhesive film and its product
Inventor: LIN CHIN-JANG
IPC: B32B33/00
Filed: 2002-10-02
Granted: 2004-06-21
Abstract: The present invention relates to a method for making a metal plate with a thermo-adhesive film and its product, which method generally comprises providing a metal plate, heating the plate to 150-200 DEG C, attaching at least one layer of heat-melting, high molecular film to one surface or two surfaces of the metal plate to allow the metal plate and the high molecular film to tightly adhere to each other, thereby forming a metal plate having a thermo-adhesive film on its surface.
Patent TW-584813-B (TW)
Title: SIM card authentication method of electronic communication device
Inventor: HE DAI-SHUEI
IPC: G06K9/00
Filed: 2002-10-18
Granted: 2004-04-21
Abstract: The invention provides an SIM card authentication method of electronic communication device, which installs an identification software in an electronic communication device provided by a telecom services provider, allowing the electronic communication device to change the subscriber's identification module card and execute the identification software before procedure for booting up. In the meantime, the identification software can identify that the SIM card has been replaced so as to request for input of an identification information matching with the SIM card and the electronic communication device provided by the telecom services provider; after the identification information is inputted, the identification software determines if the identification information is correct, then proceed to execute booting procedure so that the telecom services provider can secure the provided electronic communication device to communicate through its telecom network services.