baber/WOPTO huggingface dataset:
Patent TW-369426-B (TW)
Title: Ferromagnetic article movement detecting sensor
Inventor: KONNO HIDETO
IPC: G01R33/09
Filed: 1998-08-04
Granted: 1999-09-11
Abstract: A sensor to detect ferromagnetic article movement which can set the relative location of a permanent magnet and a magnetic-induction component and can improve design and assembly flexibility using low magnetic force and high density permanent magnet. The said ferromagnetic article detecting sensor can use a magnetic-induction component, such as AMR component, for detecting the horizontal magnetic field of the magnetic-induction components. Between magnetic-induction component and permanent magnet forms a degree alpha, formed by the straight lines extending from the center of magnetic-induction surface of the said magnet component to the center of the advancing route of the ferromagnetic article and to the magnetic-induction surface of the said magnetic-induction component within the range of 42 DEG ≤ alpha ≤ 80 DEG.
Patent TW-400528-B (TW)
Title: Multifunction key
Inventor: SPAHN HARALD
IPC: H01H25/04
Filed: 1998-09-19
Granted: 2000-08-01
Abstract: The invention relates to a multifunction key with lower production cost (1), is made especially for a wireless telephone. This multifunction key (1) can be placed in at least two different positions and has actuating surfaces (9) corresponding to different location on the surface (3) of that key. A respective contact (6) corresponding to the actuating surfaces is arranged on one of the sides opposite the key surface (3). The above-mentioned contact connects with a respective counter contact (11) on a plate (12) when the appropriate actuating surface is pressed downwards. A preferably hemispherical protuberance (7) is arranged in between the contacts (6). The protuberance protrudes from the side (10) opposite the key surface (3) to a greater extent than the contacts (6). The multifunction key (1) is integrated into the switching mat (2) in a spring-like manner via a membrane (8). As a result, the multifunction key (1) springs back into its initial position after actuation.
Patent TW-418165-B (TW)
Title: A type for vehicle wheels
Inventor: CARETTA RENATO
IPC: B29D30/16
Filed: 1998-12-24
Granted: 2001-01-11
Abstract: The carcass structure (2) of a tyre comprises one or more carcass piles (3, 31) each formed of strip-like lengths (13, 33) comprising longitudinal thread-like elements (14) incorporated in a layer of elastomer material (17). The strip-like elements (13, 33) have respective crown portions (25) disposed circumferentially in mutual side by side relationship, and side portions (24) extending radially at the tyre sidewalls. The side portions of each carcass ply (3, 31) are each at least partly covered with at least one of the side portions belonging to an adjacent deposition length. Associated with the carcass piles (3) are annular structures (4) comprising a pair of inextensible inserts (27,28) in the form of an annulus which are anchored to the first and second carcass piles (3, 31) respectively and axially separated by an elastomeric filling body (29). A belt structure (5), a tread band (8) and sidewalls (9) are combined with the carcass structure (2) to define a tyre (1).
Patent TW-434454-B (TW)
Title: Etching process for organic anti-reflective coating
Inventor: HUNG JEFFREY
IPC: H01L21/302
Filed: 1999-03-26
Granted: 2001-05-16
Abstract: A process for selectively removing an anti-reflective coating (ARC) in the manufacturing of semiconductor integrated circuits using an oxygen-free plasma of one or more fluorine containing compounds, chlorine and an optional inert carrier gas. The process renders effective etching of the anti-reflective coating while maintaining dimensional control of a previously etched photoresist.
Patent TW-408482-B (TW)
Title: The manufacture method of the DRAM capacitor
Inventor: TAN WEN-YI
IPC: H01L27/108
Filed: 1999-01-06
Granted: 2000-10-11
Abstract: A kind of manufacture method of the DRAM capacitor, which is to form an insulated layer and one etch stop layer orderly on the substrate of having device structure; then, define the etch stop layer and the insulated layer and form a contact opening. Then form an electrical-conductive layer on the contact opening, wherein the electrical-conductive layer becomes one bottom electrode of the capacitor after patterning; then, form the dielectrics with highly doping on the bottom electrode; then, proceed the thermal process. Then, remove the dielectrics, and form one capacitor dielectrics and one upper electrode orderly on the bottom electrode to complete the capacitor structure.
Patent TW-406286-B (TW)
Title: Method of manufacturing semiconductor device
Inventor: OGAWA HIROSHI
IPC: H01L21/28
Filed: 1999-02-11
Granted: 2000-09-21
Abstract: In a method of manufacturing a semiconductor device, in the first step, a lower interconnection is formed on a semiconductor substrate through a first interlevel insulating film. In the second step, a second interlevel insulating film is formed on the semiconductor substrate including the lower interconnection. In the third step, a through hole is formed in the second interlevel insulating film to reach the lower interconnection. In the fourth step, after the third step is ended, a surface of the lower interconnection including a side surface thereof exposed to a bottom portion of the through hole is etched without exposing the semiconductor substrate to the atmosphere. In the fifth step, a plug made of a conductive material is formed in the through hole. In the sixth step, an upper interconnection to be connected to the plug is formed on the second interlevel insulating film.
Patent TW-441157-B (TW)
Title: Dynamic set point switching
Inventor: NGUYEN DON J
IPC: H02M3/156
Filed: 1999-05-13
Granted: 2001-06-16
Abstract: A switching DC-to-DC converter comprising a controller to regulate a load voltage according to a set-point and a sample-and-hold circuit, the sample-and-hold circuit coupled to the controller to decrease the set-point of the controller if an average of current flowing through the inductor increases.
Patent TW-420600-B (TW)
Title: Bed forming sheet, frame, and laying sheet for mounted cultivation device and its construction method
Inventor: NAKAMURA HIROYUKI
IPC: A01G31/02
Filed: 1999-05-20
Granted: 2001-02-01
Abstract: The present invention provides a cultivation bed-forming sheet, which has excellent water retaining and excessive water drainage properties, for mounted cultivation device. This sheet is obtained by combining non-woven sheet of fiber material to form a reinforcing stringy grid net on part or the whole of the surface of plastic film or sheet. Small holes are formed with a diameter of 0.01 to 1 mm in the ratio of 0.001 to 0.3% (the total area of the small holes/the area of the film or sheet). The construction method of the mounted cultivation device also includes a plastic laying sheet to set the frame struts at proper positions. The plastic laying sheet, which is a long plastic sheet or mat in proper width, is disposed with small holes corresponding to the fixed positions of the frame struts. During the construction, the plastic laying sheet is laid on the ground, then each strut is driven through a hole of the laying sheet into the ground. As a result, the each strut can be readily driven at accurate positions without measuring or marking on the ground.
Patent TW-415011-B (TW)
Title: Narrow-channel effect free transistor and method of forming thereof by employing conductive shield embedded in the shallow trench isolation
Inventor: KIM KI-NAM
IPC: H01L27/108
Filed: 1999-06-04
Granted: 2000-12-11
Abstract: Narrow-channel effect free DRAM cell transistor structure for submicron isolation pitch DRAMs having lowed-doped substrate and active width-independent threshold voltage by employing conductive shield in the shallow trench isolation (STI). The resulting cell transistor structure is highly immune to parasitic E-field penetration from the gate and neighbouring storage node junctions via STI and will be very appropriate for Gbit scale DRAM technology. The conductive shield is biased with the negative voltage in order to minimize the sidewall depletion in the substrate.
Patent TW-434562-B (TW)
Title: Voltage boosting circuits of dynamic random access memory using asymmetric metal oxide semiconductor
Inventor: SHIA LIANG-JIU
IPC: G11C5/00
Filed: 1999-06-14
Granted: 2001-05-16
Abstract: This invention is about voltage boosting circuit of dynamic random access memory using asymmetric metal oxide semiconductor and includes the first N-type metal oxide semiconductor, the first asymmetric N-type metal oxide semiconductor and the second N-type metal oxide semiconductor. The gate electrode of the first N-type metal oxide semiconductor is connected with the voltage source and the source electrode is connected with the row decoder. The gate electrode of the first asymmetric N-type metal oxide semiconductor is connected with the drain electrode of the first N-type metal oxide semiconductor, the source electrode is connected with the word line of memory cell and the drain electrode is connected with the column decoder. The gate electrode of the second N-type metal oxide semiconductor is connected with the column decoder, the source electrode is connected with the grounding terminal and the drain electrode is connected with the word line of memory cell as well as the source electrode of the first asymmetric N-type metal oxide semiconductor.
Patent TW-417172-B (TW)
Title: Method for forming film and manufacture of semiconductor device
Inventor: TOKUMASU NOBORU
IPC: H01L21/31
Filed: 1999-06-17
Granted: 2001-01-01
Abstract: The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device, and a semiconductor device manufacturing method using such film forming method. The film forming method comprises the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a which contains P2O3 by using a film forming gas in which an oxidizing gas is added into a gas mixture including phosphorus-containing compound, which has III valence phosphorus and in which oxygen is bonded to at least one bond of the III valence phosphorus, and silicon-containing compound, or by using said film forming gas from which the oxidizing gas removed, heating the phosphorus-containing insulating film 45a while applying acceleration to the phosphorus-containing insulating film 45a to fluidize the phosphorus-containing insulating film and thus planarize a surface of the phosphorus-containing insulating film 45b while the phosphorus-containing insulating film 45a has a predetermined viscosity, and heating further the phosphorus-containing insulating film 45b after the surface of the phosphorus-containing insulating film 45b has been planarized, to sublimate P2O3 in the phosphorus-containing insulating film 45b and thus solidify the phosphorus-containing insulating film 45b.
Patent TW-452499-B (TW)
Title: Process for purging a fluid delivery system of a fluid within the system, connector apparatus, system for purging a dispense fluid within a fluid dispensing system, and manifold construction
Inventor: CAMPBELL JEFFREY M
IPC: B01D63/00
Filed: 1999-07-28
Granted: 2001-09-01
Abstract: A connector apparatus is provided which is configured to replace a separation module in a system for dispensing a fluid. When it is desired to purge the system of a dispensed fluid, the connector apparatus, having the same configuration of an inlet and an outlet as the separation module, replaces the separation module and a purging fluid is passed through the system.
Patent TW-445513-B (TW)
Title: Manufacturing method of multi-layer mask
Inventor: LIN SZ-MIN
IPC: H01L21/027
Filed: 1999-07-16
Granted: 2001-07-11
Abstract: The present invention is a manufacturing method of multi-layer mask, which comprises forming a first transparent layer on at least one predetermined region on a mask substrate, each first transparent layer comprising at least one vertical sidewall; then, forming an opaque first sidewall on the surface of the vertical sidewall of each first transparent layer, and making the top of each first sidewall to be approximately aligned to the top of the first transparent layer to which it adheres; then forming a spaced transparent layer outside the predetermined region of the mask substrate, and making the top of the spaced transparent layer to be approximately aligned to the top of the first transparent layer, so that the first transparent layer and the spaced transparent layer will form the first mask layer with a surface to be substantially smooth; then, forming a second transparent layer on at least one predetermined region of the surface of the first mask layer, the second transparent layer comprising at least a vertical sidewall; and finally, forming an opaque second sidewall on the surface of the vertical sidewall of the second transparent layer, and making the top of the second sidewall to be approximately aligned to the top of the second transparent layer to which it adheres.
Patent TW-I223653-B (TW)
Title: Inhibiting scale in vinyl monomer polymerization
Inventor: KRISHNAMURTI RAMESH
IPC: C08G14/08
Filed: 1999-08-02
Granted: 2004-11-11
Abstract: Disclosed is a method of inhibiting the formation of scale on reactor surfaces in contact with a polymerizing vinyl monomer comprising contacting said monomer with a terpolymer which comprises the condensation reaction product of (A) an aromatic compound that contains the group, where Q is OR or SR and R is hydrogen, alkyl from C1 to C15, or aryl, alkaryl, or aralkyl from C6 to C15; (B) about 0.1 to about 10 moles of a carbonyl compound per mole of said aromatic compound; and (C) about 0.1 to about 10 moles of a thiourea per mole of said aromatic compound.
Patent TW-446903-B (TW)
Title: Mouse with retractable cord
Inventor: SUGITA TSUYOSHI
IPC: G06F3/0354
Filed: 1999-08-19
Granted: 2001-07-21
Abstract: The object of the present invention is to provide a mouse which is made smart in appearance and improved in portability/compactness in the case of carriage without making a cord obstructive or disorderly when using or not using a computer. In the solution, two guide members 23 and 23 for guiding a cord 40 are parallel provided so as to be freely rotated while confronting their outer peripheral surfaces mutually proximately on the terminal side of a mouse 10. The cord 40 is closely adhered and inserted in a gap formed between the outer peripheral surfaces of the guide members 23 and 23. After drawing the cord 40, by rotating the guide members 23 and 23, the cord 40 closely adhered to the outer peripheral surfaces of the guide members 23 and 23 moves responding to the rotation and is housed inside the mouse.
Patent TW-415032-B (TW)
Title: Dual damascene process
Inventor: CHEN SHENG-SHIUNG
IPC: H01L21/768
Filed: 1999-08-19
Granted: 2000-12-11
Abstract: A method of manufacturing a dual damascene structure. A substrate having a conductive layer is provided. A first insulating layer is formed on the substrate and a second insulating layer is formed on the first insulating layer. A first etching step is performed on the first insulating layer and the second insulating layer until the conductive layer is exposed such that a via hole is formed within the first insulating layer. A second etching step is employed to form a trench opening within the second insulating layer. A metal layer is deposited to form a dual damascene structure.
Patent TW-I226248-B (TW)
Title: Aerosolizable particles resistant to hygroscopic growth
Inventor: CLARK ANDREW
IPC: A61K47/44
Filed: 1999-09-13
Granted: 2005-01-11
Abstract: The present invention is directed to particulate compositions and methods for delivering an active agent to the lung of a human patient. The active agent formulation is in dry powder form and exhibits (i) low moisture sorption, and (ii) a resistance to hygroscopic growth, particularly under simulated lung conditions.
Patent TW-477902-B (TW)
Title: Variable focal length lens
Inventor: EPSTEIN SAUL
IPC: G02C7/06
Filed: 1999-12-01
Granted: 2002-03-01
Abstract: A liquid-filled variable focal length lens of the type which has a distensible membrane as one of the lens surfaces, and a membrane support member to support the perimeter of the free area of the membrane. By using a membrane support member having a toroidally shaped portion, the membrane is supported such that it has a circular free area irrespective of the shape of the perimeter of the lens. The cross sectional shape of the toroidal portion of the support member is preferably approximately an arc of a circle, and the perimeter of the free area of the membrane is maintained tangent thereto.
Patent TW-447018-B (TW)
Title: Method for manufacturing raised source/drain
Inventor: TZENG HUA-JOU
IPC: H01L21/28
Filed: 1999-12-13
Granted: 2001-07-21
Abstract: A method for manufacturing raised source/drain is provided to reduce the facet effect. The method comprises first forming a dielectric spacer on the sidewall of the gate by depositing and back etching processes; then, depositing and back etching the side of the silicon spacer on the dielectric spacer; next, selectively growing a source/drain region on the substrate. With the shield provided by the silicon spacer, the growing process of the source/drain is provided with an extended substrate having a slowly increased degree of inclination for alleviating the speed variation in stacking the lattice, thereby reducing the facet effect. In addition, such a silicon spacer can provide a gap filling effect in advance, so as to form part of the source/drain structure. Therefore, if the silicon spacer has a proper thickness and slope (corresponding to the source/drain), the facet effect can be minimized.
Patent TW-418303-B (TW)
Title: Burner manifold apparatus for use in a chemical vapor deposition process
Inventor: DAWSON-ELLI DAVID FRANCIS
IPC: F23D14/14
Filed: 1999-12-17
Granted: 2001-01-11
Abstract: A burner manifold apparatus for delivering reactants to a combustion site of a chemical vapor deposition process includes fluid inlets, fluid outlets, and a plurality of fluid passing extending therebetween. The fluid passage converge toward each other from the fluid inlets to the fluid outlets. One embodiment includes a manifold base, a pressure plate, and a mainfold burner mount for mounting thereto a micromachined burner. The fluid passage internal to the manifold base are configured to distribute systematically the fluid to the manifold burner mount. The fluid is then channeled through fluid passages in the manifold burner mount. The fluid passages converge, yet remain fluidly isolated from each other, and the fluid passages creat a liner array for producing linear streams of fluid. Alternatively, the burner manifold apparatus may include a plurality of manifold elements in a stacked arrangement. In this alternative embodiment, the manifold elements are configured to produce a linear array of fluid passages at the top of the stack, increasing the number of the fluid passages at each level of the stack closer to the top. As yet a further alternative, the burner manifold may be produced by extruding a particulate composite through a die to produce a manifold having fluid passage therein. The extruded manifold generally has a tapered section to which a burner may be mounted.
Patent TW-479364-B (TW)
Title: Method of manufacturing a semiconductor device comprising a field effect transistor
Inventor: VAN DER MEER HENDRIK HUBERTUS
IPC: H01L29/78
Filed: 2000-02-15
Granted: 2002-03-11
Abstract: Known silicide processes have the disadvantage that they may cause a short circuit between silicide contacts on source and drain regions, on the one hand, and the silicide contact on the poly gate, on the other hand, which is commonly referred to as bridging. The invention provides a simple and self-aligned method of avoiding this type of short-circuit. After the gate definition, a titled source/drain implantation (9) is carried out, while the resist mask (7) is held in place, the angle and the implantation energy being chosen such that ions impinging on the resist mask are scattered at a small angle with respect to the silicon surface. Apart from the gate, small areas (12b, 13b) are obtained thereby, which are more heavily doped than adjacent areas (12a, 13a) of the source/drain regions. Subsequently, a thermal oxide layer is grown having thicker portions (15) on top of more heavily doped regions, and thinner portions (14) on top of the more lightly doped regions. By removing the thinner oxide portions (14), spacers (15) are obtained which provide for a separation between the silicide contacts (22,23) of the source/drain regions and the silicide contact (24) of the gate. The invention provides special advantages in the field of manufacturing non-volatile memories.
Patent TW-462947-B (TW)
Title: Method for folding Z-shaped plastic bag, mechanism and product thereof
Inventor: SHR MING-JUNG
IPC: B65H18/08
Filed: 2000-02-29
Granted: 2001-11-11
Abstract: The present invention provides a method for folding a Z-shaped plastic bag, a mechanism and a product thereof. The method comprises providing a transversal folding device in a continuous process for producing a plastic bag, in which the transversal folding device comprises a transmission path having at least two bent parts and a guide plate installed on the corresponding side of the bent parts so that the plastic bag can be bent along the bent part, and guided by the guide plate to form a folding line and be folded. The bag structure forms a folding line on the two sides. The plastic bag is folded together along the folding line to form a Z-shaped plastic bag assembly, and has the advantages of easy in unfolding, a greatly reduced width, and easy in collection.
Patent TW-484091-B (TW)
Title: Interpolation method and apparatus
Inventor: MILLER ROBERT H JR
IPC: G06T3/40
Filed: 2000-04-14
Granted: 2002-04-21
Abstract: An input number is applied to a look-up table (102) that supplies three coefficients based upon certain bits of the input that define a series of bins. The first coefficient is fed directly to an adder (112) that produces the output. The second coefficient is multiplied by a number corresponding to how far the input is from the edge of a bin. This number is then input to the adder that produces the output. The third coefficient is multiplied by a number that is the result of a curve-fit function of a number corresponding to how far the input is from the middle of a bin. This result is then input to the adder that produces the output. These three addends are aligned and summed to produce an output that corresponds within a certain precision of a chosen mathematical function of the input such as the mathematical inverse (1/x) or the mathematical inverse of the square root of the input.