baber/WOPTO huggingface dataset:
Patent JP-H01109754-A (JP)
Title: Manufacture of semiconductor device
Inventor: OZAKI KATSUYA
IPC: H01L23/36
Filed: 1987-10-22
Abstract: PURPOSE:To improve the accuracy with respect to the chip size and flatness of the rear surface of a chip, by etching a semiconductor substrate, forming the protruding part of a scribe-line, thereafter forming a metal layer, polishing the metal layer, extending the tip of the protruding part of the scribe-line, dicing the protruding part, and isolating the chip. CONSTITUTION:A circuit pattern 2 is formed on a semiconductor substrate 1. Before the forming step of a second metal layer 5, which is formed on the rear surface of the semiconductor substrate 1, the rear surface of the semiconductor substrate 1 is etched, with a scribe-line 4 being made to remain. Thus a scribe-line protruding part 1a is formed. Thereafter, the second metal layer 5 is formed. Then, the surface of the second metal layer 5 is polished and flattened. The tip of the scribe-line protruding part 1a is extended. Dicing is performed from the extended tip part, and a chip is isolated. Thus the chip isolation becomes easy, and the accuracy with respect to the chip size and flatness of the rear surface of the chip is improved.
Patent JP-H02114612-A (JP)
Title: Manufacture of coil component
Inventor: OCHI AKIO
IPC: H01F17/04
Filed: 1988-10-25
Abstract: PURPOSE:To enhance the adhesive strength of a drum-shaped core and an electrode, and to obtain the excellent coil component having little exfoliation of the drum-shaped core by a method wherein both surfaces of the electrode are entirely coated with a bonding agent. CONSTITUTION:The lower surface of a drum-shaped core 5 is coated with a bonding agent 8, and the core 5 is placed on the opposingly positioned electrodes 7a and 7b astriding them. At this time, the bonding agent hangs down to the lower side from between the electrodes 7a and 7b. Then, the bonding agent is pushed up from the lower side by a back-up part 9, and the bonding agent 8 creeps to the lower surface of the electrodes 7a and 7b. As a result, a structure in which both surfaces of the electrodes 7a and 7b are enveloped by the bonding agent 8 can be formed.
Patent JP-H01110766-A (JP)
Title: Solid-state image pickup element
Inventor: HAMADA SADAYUKI
IPC: H04N5/335
Filed: 1987-10-23
Abstract: PURPOSE:To enable the provision of a contact-equipped electrode region and a contact- free link region in a pitch between picture elements and thereby to realize enhanced structural miniaturization by a method wherein a charge transfer element is built, provided with three layers of charge transfer gates at least, and a potential barrier is formed in the transfer gate layers except in the first layer. CONSTITUTION:On a charge transfer channel 2, at least three polycrystalline silicon layers of charge transfer gates 3, 5, and 4 are formed, which constitute a charge transfer element. A charge transfer channel charge accumulation section is formed in the first charge transfer gate 3 and, in the second and third charge transfer gates 5 and 4, potential barriers are formed for the charge transfer channel 2. The charge transfer gates 3, 5, and 4 are connected to driving pulse lines 7 and 8 through the intermediary of an electrode connecting section 6. On a substrate 10, for example, a charge transfer channel 2 provided with potential barrier forming impurity regions 9, a first layer polycrystalline silicon charge transfer gate 8, a second layer polycrystalline silicon charge transfer gate 5, an optical shield aluminum layer 1, and a passivation film 11 are deposited and, in a gap in the second layer polycrystalline silicon charge transfer gate 5, a third layer polycrystalline silicon charge transfer gate 4 is provided.
Patent JP-H0629215-A (JP)
Title: Selective epitaxial method of semiconductor layer
Inventor: ROZETSUTO AZURA
IPC: H01L21/205
Filed: 1991-09-20
Abstract: PURPOSE: To provide a completely selective epitaxy method and an arbitrary etching method in an OMCVD growing structure, enabling avoidance of a mentioned defect. CONSTITUTION: This method is to deposit a mask layer 6 on a III-V or II-VI monocrystal material 2, to etch the mask layer 6 for forming an opening 10 which faces a section of the material on which selective epitaxy can be executed and to expose the epitaxy of the semiconductor layer on the section in an OMCVD structure and a masked material to the vapor of the chemical object of at least one group III or II element and at least one group V or VI element and to the vapor of hydrochloric acid or at least one halogenated object of the group V or VI element under atmospheric pressure.
Patent JP-H05239807-A (JP)
Title: Asphalt waste material regenerator
Inventor: MAKINO TSUTOMU
IPC: E01C19/10
Filed: 1991-09-20
Abstract: PURPOSE:To improve the efficiency of sieve analysis by arranging cage-shaped scoop networks with inlets to be opened to the center of trommel, at the tip section of the sieving cylindrical mesh-shaped trommel of a horizontally long rotary drum type waste material regenerator, and with outlets to be opened on the outer periphery of the trommel. CONSTITUTION:Into a horizontally long rotary drum (a rotary kiln) 2 set on an engine bed 1, asphalt waste material is cast from a hopper 4, and is heated, and a stone ingot and asphalt are separated from each other. The separated stone ingot is screened by a cylindrical mesh-shaped trommel 67. Besides, the stone ingots oversized in the trommel 67 are caught by a plurality of scoop networks 90 to be opened at the tip section of the trommel 67, and the asphalt attached to the stone ingots is forcibly avoided. As a result, the efficiency of sieve analysis can be improved.
Patent JP-H03129821-A (JP)
Title: Manufacture of semiconductor device
Inventor: YANAI MASAHARU
IPC: H01L21/3065
Filed: 1989-10-16
Abstract: PURPOSE:To reduce the loading effect especially generating when the density of a pattern greatly varies locally by a method wherein an etching treatment is conducted by introducing etching gas between a wafer-placed electrode and an auxiliary electrode, and deposition gas is introduced between the auxiliary electrode and the opposing electrode. CONSTITUTION:An auxiliary electrode 103 is provided between parallelplaced electrodes 101 and 102, gas introducing holes 104 and 105 are provided between the lower electrode 101 and the auxiliary electrode 103 and also between the upper electrode 102 and the auxiliary electrode 103 respectively. SF6 is introduced into a gas introducing hole 104, and CC14 is introduced into a gas introducing hole 104 respectively, and an etching treatment is conducted alternately by generating plasma. In this case, when plasma is generated between the upper electrode and the auxiliary electrode 103, a plasma etching mode (PE mode) is employed, and when plasma is generated between the lower electrode 101 and the auxiliary electrode 103, a reaction ion etching mode (RIE mode) is employed. By conducting the etching treatment using the above-mentioned PE mode and RIE mode alternately, loading effect is eliminated, and the resultant configurational difference can be prevented.
Patent JP-H03129900-A (JP)
Title: Method and device of mounting semiconductor integrated circuit
Inventor: ITO KAORU
IPC: H05K3/34
Filed: 1989-10-16
Abstract: PURPOSE:To improve a semiconductor integrated circuit in mounting yield by a method wherein a proper amount of solder paste is previously applied onto the leads of a surface mounting type LSI package collectively, the LSI package is placed on a board, and the solder paste is subjected to a reflow process. CONSTITUTION:A proper amount of solder paste 12 is previously applied onto the leads 11 of a surface mounting type LSI package 7 collectively, the LSI package 7 is placed on a board, and the solder paste 12 is subjected to a reflow process to mount the LSI package 7 on the board. By this setup, as the solder paste 12 is made to adhere directly to the leads 11 of the LSI package 7, applied solder can be easily, precisely controlled in amount, positioning at the application of the solder paste 12 can be dispensed with, and the LSI package 7 can be decreased in mounting failure rate caused by the inadequate amount of the applied solder and improved in mounting yield.
Patent JP-S60169748-A (JP)
Inventor: SESHIRU EDOWAADO HEIZU
IPC: G01R33/20
Filed: 1984-12-21
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H02116062-A (JP)
Title: Optical disk and controller
Inventor: MAKABE MASARU
IPC: G11B20/12
Filed: 1988-10-25
Abstract: PURPOSE:To obtain the video signals contained in a song synchronous with the corresponding music with virtually no intervention of a manual operation by recording the control information related to the music properties in accordance with the progress of the music. CONSTITUTION:The control information on the music properties, i.e., the genre, the musical tone, the tempo or the showiness, etc., are recorded to the subcodes for instance. In other words, the information accordant with the image, the feeling, etc., of the music are recorded in response to the progress of the music. Thus the reproduction of an optical disk can be controlled in accordance with the progress of the music. Then a VTR camera, a video signal switcher, etc., can be controlled based on the control information set according to the music contents. Thus it is possible to easily and automatically record the images obtained by plural VTR cameras.
Patent JP-2001090297-A (JP)
Title: Solar cell module and roof panel using the same
Inventor: KOMAI HIROSHI
IPC: E04D3/40
Filed: 1999-09-22
Abstract: PROBLEM TO BE SOLVED: To provide a solar cell module capable of preventing the ignition of a terminal box. SOLUTION: In the solar cell module M, a plurality of solar cells S are arranged on one surface of a tabular lower plate 6a and a terminal box 10 composed of a resin is fixed onto the other surface. The terminal box 10 is fixed onto the lower plate 6a through a fixing releasing means 11, by which the terminal box 10 is detached from the lower plate, before the terminal box 10 ignites by itself by heating.
Patent JP-H02116633-A (JP)
Title: Powder of plate-shaped fine particle of oxide containing ba and fe as primary component and preparation of the powder
Inventor: NISHI MASATOSHI
IPC: G11B5/706
Filed: 1988-10-24
Abstract: PURPOSE:To obtain powder of title fine particles having great value of magnetization, appropriate coercive force, and superior temp. stability by heating and calcining a coprecipitate generated from a ferrous salt, ferric salt, Ba salt, specified metal salt, and alkaline aq. soln. CONSTITUTION:A coprecipitate is generated from a mixture of a ferrous salt and ferric salt wherein a proportion of ferric salt to the total of the ferrous salt plus ferric salt is 5-100% expressed in terms of Fe<2+>/(Fe<2+>+Fe<2+>), a Ba salt, a metal M salt [M is at least one bivalent metal selected from Co, Ni, Zn, Mg and at least one tetravalent metal selected from Ti, Sn, Zr, and Ge], and an alkaline aq. soln. By heating and calcining the coprecipitate, plate-shaped fine particles of oxide contg. Ba and Fe as primary components and having a crystal structure wherein a proportion of a peak intensity for 2theta=43.4 deg. to a peak intensity at 2theta=45.2 deg. in an X-ray diffraction analysis when Fe is used as target, are obtd.
Patent JP-H11111863-A (JP)
Title: Semiconductor memory and its manufacture
Inventor: HIBINO KENJI
IPC: G11C11/56
Filed: 1997-10-01
Abstract: PROBLEM TO BE SOLVED: To obtain a reference current enough to certainly judge data stored in memory cells by implanting specified amts. of ions respectively in reference cells and dummy cells, using a resist film having holes corresponding to the dummy cells. SOLUTION: A mask ROM manufacturing method comprises forming polysilicon gate layers 4 crossing parallel arranged n<+> semiconductor buried diffusion layers 3 to form gates of cell transistors, implanting ions for setting desired threshold in channel regions 5 beneath the gates, placing round reference cells 1 dummy cells having the same structure as that of the reference cell, forming a resist film having holes corresponding to the dummy cells 2 and implanting specified amts. of ions respectively in the reference and dummy cells 1, 2.
Patent JP-2000084853-A (JP)
Title: Cooling method and cooling device in machining
Inventor: MUKAI RYOHEI
IPC: B24B55/02
Filed: 1998-09-08
Abstract: PROBLEM TO BE SOLVED: To improve the cooling effect of cooling with air such as cooling air flow during machining. SOLUTION: With cooling in machining, when a driven-rotated work W by a machining tool G, a cooling fluid such as normal temperature air or cooling air below zero degree is supplied to a part P to be machined at which the machining tool contacts with the work, and simultaneously with this, a cooling fluid is supplied to the work itself other than the area to be machined, and a lubricating fluid is supplied to the work itself other than the part to be machined. The cooling fluid supplied to the work itself other than the part to be machined, can be a small quantity of coolant such as room temperature air, cold blast or mist, droplets, and the lubricating fluid can be a small quantity of lubricating oil or cooling fluid which is supplied independently of the cooling fluid, namely lubricating oil-mist mixed in normal temperature air or cold air flow.  As a means for supplying the lubricating fluid and cooling fluid, nozzles, applying members, a storage tank for immersing the work, are used.
Patent JP-H0985713-A (JP)
Title: Pressing machine for timber
Inventor: NAGAI YOSHIMASA
IPC: B27M1/08
Filed: 1995-09-22
Abstract: PROBLEM TO BE SOLVED: To effectively utilize lumber from thinning having various thicknesses by incorporating strengths by pressing the lumber. SOLUTION: The pressing machine comprises four pressing plates for pressing the surfaces of a timber in a prismatic state, and longitudinal and lateral cylinders for pressing the opposed pressing plates. The plates have first pressing plates 5A, second pressing plates 5B, third pressing plates 5C and fourth pressing plates 5D for pressing in four directions perpendicularly to each other. The longitudinal and lateral cylinders have lateral cylinder 6 for approaching the plates 5A and 5C to each other and longitudinal cylinder 7 for approaching the plates 5B and 5D to each other. The plates 5A and 5C are opposed to press the opposed surfaces of the timbers. The plates 5A and 5D are so opposed vertically as to make it possible to approach to each other.
Patent JP-H0691326-A (JP)
Title: Production of hexagonal steel tube
Inventor: KAJIKI ETSUJI
IPC: B21C37/15
Filed: 1992-09-14
Abstract: PURPOSE:To obtain such manufacture that a small hexagonal steel tube having a hexagonal corner R is manufactured by cold drawing and the hexagonal steel tube can be used for a nut etc., as it is. CONSTITUTION:In a method to manufacture the hexagonal steel tube by cold drawing from a round steel tube stock having a wall thickness T and an outer diameter D ratio <=0.10, a die 1 having a worked surface obtained by intersecting and connecting a hexagonal pyramid surface 2 positioned on the inlet side and a hexagonal pillar surface 3 positioned on the outlet side along the central axis of the die 1 is used.
Patent JP-H0696457-A (JP)
Title: Optical pickup device
Inventor: KISO MATAICHIRO
IPC: G11B7/09
Filed: 1992-09-11
Abstract: PURPOSE:To accelerate positioning of a laser beam on a track and to save a space and to evade a mechanical trouble, in an optical pickup device. CONSTITUTION:An acoustooptical element 10 is arranged on the way of an optical path from a semiconductor laser 31 to an information recording medium (optical disk) 1, and positional deviation between a laser beam condensing point and a medium groove on the information recording medium 1 is detected by a photodetector 8, and a high frequency signal is outputted to the acoustooptical element 10 from a control circuit 13 corresponding to the deviation, and the laser beam is diffracted by a required angle and then the laser beam condensing point is placed on the groove center on the information recording medium always. Then, mechanical control is unnecessitated, and the problems of mechanical vibration, etc., are evaded, and a device structure is simplfied.
Patent JP-S63121968-A (JP)
Title: Picture editing system
Inventor: SETO NATSUKI
IPC: G09G1/06
Filed: 1986-11-11
Abstract: PURPOSE:To simplify inputting a line with contents the same as or similar to a line that has been inputted just before by modifying a cursor position after line inputting has been completed in response to a normal input mode in which lines are inputted and to a similar line input mode. CONSTITUTION:A similar line input mode setting means decides whether the similar line input mode is set or not when the similar line input mode setting means sets the similar line input mode and when a line feed key input decision means decides the input of a line feed key and decides whether a similar line input mode decision means inputs the line feed key. When the similar line input mode decision means decides that a cursor setting means sets the similar line input mode, a cursor is moved to the top of the inputted line. If the similar line input mode decision means decides that the similar line input mode is not set, the cursor is moved to the top of a line next to the inputted line.
Patent JP-S63122554-A (JP)
Title: Printer
Inventor: OKUNO SHIGERU
IPC: B41J2/06
Filed: 1986-11-12
Abstract: PURPOSE:To facilitate mounting of an electrode and to enable accurate positioning in the axial direction, by providing a pair of holding members for holding and securing a plurality of recording electrodes along the axial direction and forming V-shaped grooves for positioning the recording electrodes in at least one of said holding members. CONSTITUTION:An electrode holder 11 comprises a pair of holding members 17, one of which is a holding section 17a, while the other is a stopping section 17b. A plurality of V-shaped grooves 18 for positioning recording electrodes 10 are arranged horizontally in a row in the upper face of the holding section 17a. Recording electrodes 10 are positioned by the holding members 17 at three points one, of which exists at the stopping section 17b while other two points exist at the holding section 17a. The positioning points in the groove 18 limits vertical and lateral motion of the recording electrode 10, thereby when the recording electrode 10 is held by a pair of holding members 17, the motion of the recording electrode 10 is limited in the direction of 360 deg. so as to position the recording electrode at a fixed position without fail, thus preventing positional shift of the recording electrode 10 due to the mounting operation thereof. Furthermore, the holding members 17 hold the recording electrode 10 along the axial direction.
Patent JP-H02120241-A (JP)
Title: Production of silicophosphate glass
Inventor: FUJII TAKESHI
IPC: C03B19/12
Filed: 1988-10-27
Abstract: PURPOSE:To obtain the title glass of high purity and high quality in a large form without crack and breakage by hydrolyzing a mixture of a reaction product from alkoxides of rare-earth elements and phosphoric acid or phosphorus alkoxide with silicon alkoxide, then heating the product. CONSTITUTION:Alkoxides of rare-earth elements of the formula M(OR)3 (R is alkyl, aryl, a group forming a chelate; M is at least one metal selected from Nd, Ce, Sm, Eu, Gd, Tb, Ho, Er, Tm, Yb, and Lu) are allowed to react with phosphoric acid or phosphorous alkoxide to obtain a reaction product. Then, the prorduct is mixed with phosphorus alkoxide and silicon alkoxide to prepare a mixture for producing phosphate glass and the mixture is combined with water in an amount of 0.5 to 2 fold moles based on the total alkoxy groups to conduct hydrolysis, Then, the mixture is aged for several hours to several days to effect polycondensation reactions, further the solvent is removed under reduced pressure above 50 deg.C to give a silicon alkoxide polymer containing rareearth elements and phosphorus. Finally, the polymer is hydrolyzed, subjected to polycondensation reaction and the resultant precursor gel of a silicophosphate glass is dried and calcined at 900 to 1,400 deg.C.
Patent JP-H06317401-A (JP)
Title: Combination-painting thickness gauge for non-ferrous painting on iron substrate and nonconducting painting on conducting substrate
Inventor: FURANKU JIEE KOTSUKU
IPC: G01D5/20
Filed: 1993-10-01
Abstract: PURPOSE: To provided hand held-type compatible coating thickness gage by which the measurement of the thickness can be performed in both of the non-ferrous coating onto an iron base, and the non-conductive coating onto a conductive non-ferrous substrate. CONSTITUTION: The measurement of the coating on the iron base is performed by arranging a permanent magnet 30, a hole sensor 50 and a thermistor 40 in such manner that the magnetic flux density of which the temperature is compensated, of one of the poles of the permanent magnet 30 can be measured. The magnetic flux density of the pole of the magnet can be corresponded to the thickness of the non-ferrous coating. The measurement of the non-conductive coating on the conductive non-ferrous substrate, can be performed by utilizing the eddy current effect. A coil 60 near a point 70 of a gage probe, is excited by AC of about 6-12MHz frequency. The coil 60 forms the eddy current on the surface of the conductive substrate. The eddy current forms the magnetic field of the opposite polarity, and affects the excited coil 60.  The eddy current effect on the coil 60 is measured, and the extent of the effect is corresponded to the thickness of the non-conductive coating.
Patent JP-H03215034-A (JP)
Title: Multilayered polyethylene-based stretch shrink film and manufacture thereof
Inventor: ISOZAKI HIDEO
IPC: B29L7/00
Filed: 1990-10-09
Abstract: PURPOSE:To obtain the above film excellent in transparency, stretching properties and heat shrinkability by a method wherein the intermediate layer of the film concerned is mainly made of specified linear low-density polyethylene and its innermost and outermost layers are made of composition, which is prepared by mixing specified low-melting ethylene-alpha-olefin copolymer and specified surface-active agent with ethylene-based copolymer. CONSTITUTION:The intermediate layer of the film concerned is mainly made of linear low-density polyethylene and its innermost layer and outermost layer are made of composition, which is mainly prepared by mixing 0.3 - 3.0pts.wt. of surface-active agent composition with 100pts.wt. of mixture consisting of 80 - 40wt.% of linear low-density polyethylene and 20 - 60wt.% of ethylene-alpha- olefin copolymer. In addition, the thickness of the intermediate layer is set to be 60% or more of the total thickness and the thicknesses of the innermost layer and of the outermost layer are respectively set to be 1mum or more. Thus, the favorable transparency, heat shrinkability and stretching properties are obtained.