baber/WOPTO huggingface dataset:
Patent JP-S6474982-A (JP)
Title: Recombinant vaccinia virus
Inventor: YASUI KOTARO
IPC: C12N7/00
Filed: 1987-09-16
Abstract: PURPOSE:To obtain the title virus which is used as a vaccin, by building the DNA coding the E protein in Japanese encephalitis virus into the genome region nonessential for propagation of vaccinia virus. CONSTITUTION:The cDNA (4118) coding the surface antigen protein is isolated from the cDNA in the sagayama line of Japanese encephalitis virus, connected to another cDNA (2-20) whose sequence partially overlaps in the N-terminal at the Aaf II site to give the cDNA (203) perfectly covering the E protein. The fragments of J7 of 1.6kbp, J4 of 2.1kbp, and J6 of 2.4kbp are prepared from the cDNA, and inserted into pAK8 including the polylinker and vaccinia virus 7.5k promoter, and the resultant pAKJ7, pAKJ67 and pAKJ6 are introduced into RK-13 cells which is inoculated with attenuated small pox line LA to give recombinant vaccinia virus LAJ7, LAJ4 and LAJ6.
Patent JP-S61108121-A (JP)
Title: Manufacture of semiconductor device
Inventor: KAKIMOTO SEIZO
IPC: H01L21/20
Filed: 1984-11-01
Abstract: PURPOSE:To improve the reproducibility of the titled semiconductor device by a method wherein, when a thin film single crystal is formed by fusing and recrystallizing an amorphous or polycrystalline thin film by performing an annealing using an energy beam, a composite film of a narrow-stripped high melting point metal, having the width narrower than that of a beam, and a polycrystalline Si are formed on the thin film before recrystallization, and nuclei which are turned to seeds are grown under said composite film. CONSTITUTION:An insulating film 6 such as SiO2 and the like, an amorphous or polycrystalline Si layer 7 which is going to be single-crystallized and an insulating film 8 such as SiO2 and the like are formed by lamination on an Si substrate 1, and a composite film 11 consisting of a polycrystalline Si film 9, which alleviates the thermal stress generating when an annealing is performed, and a high melting point metal 10 such as Mo, W and the like having large electron stopping power and high electron reflectivity, are provided on the insulating film 8. Then, the film 11 is patterned into narrow-stripped form. At this time, the width of the narrow strip is formed at 10-20mum or thereabout which is narrower than the diameter of the electron beam. Through these procedures, the temperature rise of the Si layer 7 when an annealing is performed using an electron beam is suppressed, and a nuclei generating position suitable for the growth of single crystal is generated.
Patent JP-S61111922-A (JP)
Title: Production of acicular particle containing iron carbide
Inventor: OKAMURA KAZUO
IPC: C01B31/30
Filed: 1984-11-01
Abstract: PURPOSE:To produce an acicular particle having excellent magnetic properties and high iron carbide content, by contacting an alkali-treated or Co-coated gamma-Fe2O3 with CO or a mixture of CO and H2. CONSTITUTION:An alkali-treated or Co-coated gamma-Fe2O3 is used as the starting material. The alkali treatment is carried out by conventional method, e.g. by contacting the iron oxide with and aqueous solution of an alkali such as sodium hydroxide (preferably >=10pH), and filtering and drying the treated material. The Co-coating is also carried out by conventional method, e.g. by putting the gamma-Fe2O3 in an aqueous solution of a Co salt (e.g. a dilute solution of 0.1-10wt% concentration), alkalinizing the solution with an alkaline aqueous solution, and filtering and drying the material. The treated gamma-Fe2O3 is made to contact with CO or a mixture of CO and H2 (preferably at 250-400 deg.C) to obtain an acicular particle containing iron carbide.
Patent JP-S6386351-A (JP)
Title: Battery
Inventor: YOSHIDA KAZUMASA
IPC: H01M4/66
Filed: 1986-09-30
Abstract: PURPOSE:To steadily decrease the contact resistance between a positive can and a positive active material and to obtain a small battery having good storage performance and suitable for high rate applications by locating carbon fibers between the positive can and the positive active material. CONSTITUTION:A positive active material 3 mainly comprising manganese dioxide is press-molded in a positive can 1 made of nickel plated steel plate through a piece of carbon fiber paper 2. A negative active material 5 comprising gelled zinc is placed on the positive active material 3 through a separator 4 comprising polypropylene nonwoven fabric. A cap 6 which also serves as a negative terminal is placed on the negative active material 5. A synthetic resin gasket 7 is arranged between the periphery of the cap 6 and the opening of the positive can 1, and the opening of the positive can 1 is bent to seal a battery.
Patent JP-S60122935-A (JP)
Title: Preparation of silver halide emulsion
Inventor: MATSUZAKA MASASHI
IPC: G03C1/015
Filed: 1983-12-07
Abstract: PURPOSE:To obtaina monodispersed silver iodobromide emulsion superior in sensitivity and graininess by mixing each soln. of a protective colloid, a water- soluble silver salt, and a water-soluble halide, and forming silver iodobromide grains in the presence of a tetraazaindene. CONSTITUTION:An intended monodispersed silver iodobromide emulsion is obtained by incorporating in an aq. soln. of a protective colloid of gelatin or its derivs., or the like, a water-soluble silver salt soln., such as silver nitrate soln., a water-soluble halide soln., such as KI or KBr soln., and, preferably, 50-1,500mg (per mol of silver iodobromide) of a tetraazaindene compd., represented by formula I in which R1-R3 are each H, alkyl, amino, halogen, aryl, or the like, and as a preferable example, compds. embodied by formulae II and III.
Patent JP-S6389246-A (JP)
Title: Assembling pallet
Inventor: SUGIYAMA YOSHIO
IPC: B23Q7/00
Filed: 1986-09-30
Abstract: PURPOSE:To perform the centering of a work simply in a short time by pushing it under pressure, by installing a first claw which comes into contact with one point of an outer circumferential surface of the work and pressing it, and also a second claw having two pressing surfaces rockable around a fulcrum as mutually opposed to the work. CONSTITUTION:When a work is fitted in a reference hole 1a of a substrate 1, air out of an air feeding part 10 is fed to an air cylinder 2, and a claw flush metal fitting 2b is moved as compressing a spring 3 whereby a claw arm 6 supporting a first claw 4 is released. In a positions opposed to each other in holding the claw 4 and the work in between, there is provided with a claw moving arm 6a where a second claw 5 with two pressing surfaces 5a, 5a is rockably attached as its center is supported by a fixed pin. After work charging, these claw moving arms 6, 6a and come nearer to each other by cylinders 11, 12, and the work is pinched by claws 4, 5a and 5a. Therefore, work centering is remedied by these pressing surfaces 5a, 5a of the second claw 5. And, the claw 5 is clamped, the air feed is cut off, and the work is moved to the next process as leaving it pinched and pressed by the spring intact.
Patent JP-S6386437-A (JP)
Title: Photochemical vapor growth device
Inventor: KIMURA TATSUYA
IPC: H01L21/31
Filed: 1986-09-29
Abstract: PURPOSE:To maintain the reproducibility of light intensity by a method wherein a light source irradiating linear light in parallel with the surface of semiconductor wafers, a blowing means of inert gas blast on an inner wall of a light transmission window as a part of a reaction chamber and a shifting means capable of changing position of a substrate holding means corresponding to light intensity are provided. CONSTITUTION:Semiconductor substrates 7 heated by a heater 10 are led in a reaction chamber 1 by a conveyer 8. The inside and outside of reaction chamber 1 are insulated from each other by a cylindrical drum. Films are deposited only on a slender part on the semiconductor substrate 7 below excited light 17 so that the films may be deposited on overall parts of semiconductor substrates 7 by shifting the substrates 7 using a conveyer 8. Thus, the space of transmission window 3 can be reduced due to the least width of exciting light 17 so that the space of transmission window 3 part with inert gas blast blown thereon from an inert gas inlet 4 may be reduced to prevent any reactive product from bonding onto the window 3 without fail. Through these procedures, the light intensity transmitting the window 3 can be specified constantly.
Patent JP-H0570790-A (JP)
Title: Cutting oil purifier in machining apparatus
Inventor: MUKAI NOBUHIRO
IPC: B01D29/09
Filed: 1991-09-12
Abstract: PURPOSE:To provide a cutting oil purifier which permits continuous operation of a machining apparatus by cleaning its screen automatically. CONSTITUTION:The screen-supporting means comprises a motor 10 and a screen- supporting frame 11, and to a screen 2 moved to the stand-by position, a clean cutting oil from a nozzle 15 as a cutting oil injection means is injected to blow away cutting chips attached to the screen 2. Thus, the screen 2 is made free from the cutting chips. The cutting chips blown off the screen 2 are received by a cutting chip recovery box 16 as a cutting chip recovery means and hence do not fall into a used cutting oil reservoir A.
Patent JP-2000065801-A (JP)
Title: Inspecting mehtod for damage inside metal tube
Inventor: SHIGEKUNI EIJI
IPC: G01N27/90
Filed: 1998-08-18
Abstract: PROBLEM TO BE SOLVED: To inspect a whole area conveniently and efficiently eliminating the effect of magnetic inhomogeneity on a ferromagnetic metal tube with a non- magnetic metal layer formed therein, particularly on a hot-dip aluminum-plated carbon steel tube. SOLUTION: In this inspecting method, an unused tube and a plurality of tubes at different damage stages are tested for flaws by an insertion probe type eddy current flaw detector, and on the basis of the information therefrom a reference graphic is formed. By likewise forming a graphic about a metal tube being inspected and by comparing it with the reference graphic, a damage stage of the metal tube being inspected is determined. Also, a permanent magnet 202 with a weak magnetic force is arranged on both sides of a test coil 201 in a probe 200.
Patent JP-H0685457-A (JP)
Title: Ceramic multilayer circuit board and manufacture thereof
Inventor: FURUHASHI KAZUO
IPC: H05K3/46
Filed: 1992-08-31
Abstract: PURPOSE:To obtain a ceramic multilayer circuit board, which has internal wirings formed using a silver conductor and a surface wiring formed using a copper conductor, is provided with the copper conductor surface wiring having a high bonding strength, is superior in a wettability with solder and is superior in productivity, and a method of manufacturing the circuit board. CONSTITUTION:In a ceramic multilayer circuit board 10, which is provided with a glass-ceramic multilayer board 1 having internal wirings 12 formed using a silver conductor and a surface wiring 2, which is formed using a copper conductor and is formed on the main surface of the board 1, via hole conductors 14 consisting of a platinum or palladium conductor are formed at joints between the wirings 12 and the surface wiring 2. Moreover, after the wiring 2 is printed on the multilayer board 1, it is subjected to firing at a temperature of a silver- copper eutectic point or higher, such as 900 deg.C, in a neutral or reducing atmosphere.
Patent JP-H0978185-A (JP)
Title: Die steel excellent in toughness and its production
Inventor: FUKUMOTO SHIHO
IPC: C22C38/46
Filed: 1995-09-11
Abstract: PROBLEM TO BE SOLVED: To inhibit the propagation of cracks and to provide a die steel excellent in fracture toughness value by specifying the proportions of main elements and controlling the value of carbon equivalent of carbide forming element, the value of carbon equivalent of V, and the relation between both, respectively. SOLUTION: This die steel is composed of an Fe-base martensitic steel having a composition containing, by weight, 0.1-0.2% C, <=2% Si, <=2% Mn, 2-5% Ni, 3.5-7.0% Cr, 3-10% of either or both of W and Mo as W equivalent (W+2Mo), and 0.5-<1.1% V. Further, when the carbon equivalent (Cv) of V and the carbon equivalent (Ceq) of carbide forming element are represented by Cv=0.2V and Ceq=0.063[Cr]+0.06[Mo]+0.033[W]+0.2[V], respectively, the relation of Cv/Ceq<=0.3 is satisfied. Moreover, δ-ferrite at the austenitizing temp. is regulated so that the area ratio of microstructure comprises <=3%. By this composition, the steel, combining >= about 100MPam1/2 fracture toughness value with >= about 70% value of reduction of area at ordinary temp., can be obtained.
Patent JP-S59115796-A (JP)
Title: Treatment of oil slurry
Inventor: IWAI TETSUO
IPC: C02F11/00
Filed: 1982-12-23
Abstract: PURPOSE:To separate and recover efficiently the oil component contained in oil slurry from said slurry by removing a solid component from the oil slurry with a solid-liquid separator, then treating the slurry with a centrifugal separator and heating the slurry to remove water and adding finally activated clay, etc. thereto and filtering the slurry. CONSTITUTION:The oil slurry consisting of a mixture of oil, water and sludge formed as industrial waste is pumped from a storage tank I into the 1st heating tank II where the slurry is heated to about 50 deg.C to decrease the viscosity. The heated slurry is subjected to a solid-liquid sepn. in a screw decanter III. The oil slurry from which the solid component is removed is heated to about 70 deg.C in the 2nd heating tank IV and thereafter the slurry is treated in a disc type centrifugal separator V to remove mainly the non-emulsified water. The slurry is further heated to at least 105 deg.C, more preferably >=110 deg.C in the 3rd heating tank IV, to evaporate the water to dry. A filter aid, such as activated clay, is added to the treated oil slurry in a mixing tank VII and the slurry is finally filtered in a filter press VIII, whereby the regenerated oil having the quality equivalent to the quality of ''B'' heavy fuel oil is recovered.
Patent JP-H10140034-A (JP)
Title: Production of carbon black
Inventor: MISE NOBUTAKE
IPC: C09C1/48
Filed: 1997-08-28
Abstract: PROBLEM TO BE SOLVED: To provide a method for efficiently producing carbon black satisfying both high blackness and good dispersibility, small in primary particle size, also small in its agglomerate size and narrow in agglomerate size distribution with minute amounts of relatively large-sized agglomerates. SOLUTION: This carbon black production method uses a production oven having a 1st reaction zone where a high-temperature combustion gas flow is formed, a 2nd reaction zone equipped with a choke unit and to produce the aimed carbon black by mixing a stock hydrocarbon with the above gas flow, and a 3rd reaction zone situated on the downstream side of the 2nd reaction zone and to terminate the reaction. In this case, the diameter of the choke unit is set at <=170mm, and the flow velocity of the combustion gas inside the choke unit >=250m/s.
Patent JP-H0552439-A (JP)
Title: Absorption heat pump
Inventor: OKA MASAHIRO
IPC: F25B15/00
Filed: 1991-08-21
Abstract: PURPOSE:To form an absorption heat pump in a compact manner and to improve a result factor by a method wherein heat imparted by sewage treating water in a first vaporizer is emitted to the intermediate hot water side through a double effect absorption heat pump cycle and inputted to a second vaporizer. CONSTITUTION:Dilute liquid in a first absorber 4a is mixed in dilute liquid in a second absorber 4b after the flow of it through a low-temperature heat- exchanger 5b and the mixture flows through a high-temperature heat-exchanger 5a to a high-temperature regenerator 1a. Concentrated liquid in the high- temperature regenerator 1a flows through the high temperature heat-exchanger 5a to a low-temperature regenerator 1b, a part thereof reversely flows to the second absorber 4b and the rest reversely flows through the low-temperature heat-exchanger 5b to the first absorber 4a. A part of refrigerant steam generated in the high-temperature regenerator 1a flows through the low-temperature regenerator 1b and a first condenser 2a to a first vaporizer 3a and the rest flows through a second condenser 2b to a second vaporizer 3b. Further, an intermediate hot water line 8 is arranged in a manner to circulate, in order, the first absorber 4a, the first condenser 2a, and the second vaporizer 3b.
Patent JP-H05213684-A (JP)
Title: Method for etching aluminum nitride
Inventor: SASAKI HIROYUKI
IPC: C04B41/53
Filed: 1991-09-12
Abstract: PURPOSE:To precisely etch into an arbitrary shape by chemical etching, concerning etch-machining of aluminum nitride ceramics. CONSTITUTION:The surface of an aluminum nitride body 1 to be etched is irradiated with laser light 2 and the irradiated part is converted into a degenerated region 3. This region 3 is selectively removed by chemical etching.
Patent JP-H0897523-A (JP)
Title: Printed wiring board, its repairing method and its manufacture
Inventor: ABE SHINJI
IPC: H05K1/11
Filed: 1994-09-28
Abstract: PURPOSE: To prevent the increase of a repairing pad by keeping a positional relation capable of utilizing in common an element connecting pad, a plurality of surface patterns constituted of a pad for connecting the inner layer wiring patterns of a base board and a repairing wiring pattern having a repairing wiring on both ends. CONSTITUTION: The element mounting region 30 of a base board has a plurality of element connecting pads 3a, 3b for a signal and a power supply, a plurality of inner wiring connecting pads 4 and a plurality of repairing wiring patterns 6. Both ends of the respective repairing wiring patterns 6 have wiring connecting pads 7a, 7b. A plurality of the element connecting pads 3a and the pads 4 for a signal are disposed on both sides of the patterns 6 in the form of having the repairing wiring patterns 6 in common. Further, a plurality of repairing pads 14 and a plurality of pass-through pads 17 are provided on the base board. On the other hand, a routing pad 15 is located in the periphery of the element mounting region 30 and it is a region to which the repairing wiring is fixed. Thereby, a surface layer can be repaired.
Patent JP-H0575929-A (JP)
Title: Solid state image pickup element
Inventor: OSHIO TOSHIYUKI
IPC: H04N5/341
Filed: 1991-09-12
Abstract: PURPOSE:To make it possible to vary sensitivity by sweeping the signal charge of picture element cells in a practically valid display screen smaller than an image pickup element valid picture element range time-independently of the scanning operation of a signal output function. CONSTITUTION:Vertical CCD(VCCD) for reading signals are arranged on the right sides of photodiodes and signal sweeping routes are arranged on the left sides of the photodiodes. In a CCD type solid state image pickup element, the signal charge of respective photodiodes is simultaneously read out to their corresponding VCCDs. Signals corresponding to each horizontal picture element are transmitted from the VCCDs to a horizontal CCD(HCCD) in parallel. The signal charge for one horizontal(1H) picture elements through the HCCD is converted into a voltage signal through an amplifier AMP and the voltage signal is serially outputted. Thus the sensitivity can be varied under the control of stored time by sweeping the signal charge in the picture element cells to the signal sweeping routes at the optional timing of signal reading.
Patent JP-2000066041-A (JP)
Title: Manufacturing method of fiber grating and manufacturing device thereof
Inventor: IMAMURA KAZUO
IPC: G02B6/02
Filed: 1998-08-19
Abstract: PROBLEM TO BE SOLVED: To easily manufacture a fiber grating permitting to suppress noise generation caused especially by ripples in a reflection characteristic. SOLUTION: An ultraviolet laser beam radiated from a laser source 6 of a front irradiating system 6 via a beam expander 8 and slit 9 is branched by a beam splitter 15, and is changed in the irradiating direction by a reflecting mirror 16 and a movable reflecting mirror 10 of a rear irradiating system 32, and a range P is irradiated from the other side (backward) via an optical system 14 which alters the beam irradiating quantity to a specified characteristic. While keeping both positions of the front irradiation and the rear irradiation at the same relative position, the reflecting mirrors 10 are synchronously controlled with a synchronous interlocking mechanism 41 to move from one end to the other in the direction of the fiber axis, and the forward irradiation and the backward irradiation are carried out at the same time.  In such a manner, a flat refractive index profile is obtained by carrying out a simultaneous apodization to make an average refractive index constant in the direction of the fiber axis.
Patent JP-S61112384-A (JP)
Title: Solar battery and manufacture thereof
Inventor: OKANIWA HIROSHI
IPC: H01L31/0224
Filed: 1984-11-07
Abstract: PURPOSE:To improve productivity, by bonding at least one of electrode layers to a photovoltaic layer by a conducting bonding layer, and separately preparing the photovoltaic layer and the electrode layer. CONSTITUTION:An electrode sheet, which is separately prepared, is bonded to a semiconductor layer of a photovoltaic layer by a conducting bonding agent. As the conducting bonding layer, a dispersing type conducting macromolecular- resin bonding agent prepared by the following method is used: conducting oxide fine particles of tin oxide, indium oxide, titanium oxide and the like are dispersed into a macromolecular resin for binder such as polyester resin, acrylic resin, polyvinyl resin, epoxy resin, polyurethane resin, silicon resin and the like. It is desirable to have resistivity of 10<6>cmOMEGA or less in order that a light current generated in the semiconductor photovoltaic layer is transmitted to electrode layers without loss by said conducting bonding layer.
Patent JP-H02157018-A (JP)
Title: Method and apparatus for purifying waste gas
Inventor: RAINHARUTO GURASU
IPC: B01D53/84
Filed: 1989-09-11
Abstract: PURPOSE: To prohibit the degradation in the active force of an adsorbent and to well separate hazardous materials by shortening the average retention time of an adsorbent suspension in a scrubbing device and prolonging the average retension time in a reactor in waste gas purification using scrubbing and reaction in combination. CONSTITUTION: The adsorbent suspension contg. the fine adsorbent of an average grain size of 0.0001 to 5 mm is introduced at a concn. of 40 to 200 g/l into the gas- scrubbing device 1 and is dispersed into a mass exchange zone 2. A waste gas is send in the opposite direction to a crude gas inlet 3 with respect to the downwardly flowing adsorbent suspension and comes into contact with the adsorbent suspension. the average water sprinkling density of the adsorbent suspension is 3 to 40 m<3> /m<2> /h. The average retension time is shorter than 40 seconds.  A scrubbing liquid contg. the hazardous materials and the adsorbent is removed from a scrubbing liquid receiver 4 and is sent to a fluidized bed reactor 9 where the scrubbing liquid is stirred and purified in the presence of aerobic bacteria and oxygen during the time of the average retention time longer than 90 times the average retention time in the gas-scrubbing device 1. The purified adsorbent-contg. scrubbing liquid is returned to the gas-scrubbing device 1.
Patent JP-2000068390-A (JP)
Title: Semiconductor storage device and manufacture thereof
Inventor: MORI GENICHIRO
IPC: H01L21/8244
Filed: 1998-08-19
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor storage device and the manufacturing method for dissolving the problem generating junction leakages and improving storage holding characteristics by perforating the boundary of both ends of a gate electrode and a substrate surface into a slit shape at working of the gate electrode. SOLUTION: In an SRAM whose constituting element is a MOS transistor on the side face of the gate electrode 15, a conductor sidewall 21 composed of a conductor and an insulator sidewall 19 composed of an insulator for covering the conductor sidewall 21 are provided. Then, the conductor sidewall 21 is formed so as to bury a groove generated at the boundary of the gate electrode 15 and the semiconductor substrate.