baber/WOPTO huggingface dataset:
Patent TW-446691-B (TW)
Title: Electric discharge machining apparatus
Inventor: SATO TATSUSHI
IPC: B23H1/06
Filed: 1997-02-14
Granted: 2001-07-21
Abstract: An electric discharge machining apparatus in which at least either of a tool electrode or a workpiece is made of an anisotropic conductive material, includes, on a good conductive surface 20b of the anisotropic conductive material 2 a portion for connecting anisotropic conductive material 22. Electric discharge is generated on the good conductive surface 20b of the anisotropic conductive material 2. A conductive adhesive agent 23 is employed to bond the anisotropic conductive material 2 and the isotropic conductive member 22 to each other. The anisotropic conductive material is a pyrocarbon material. The pyrocarbon heat resolved carbon material is employed as a tool electrode material. Incombustible dielectric fluid such as pure water is employed as dielectric fluid. Moreover, there are provided apparatus for measuring voltage during electric discharge, apparatus for setting a threshold value for use to determine whether the electric discharge is normal electric discharge or abnormal electric discharge and apparatus for interrupting supply of a discharge current in a case where the measured discharge voltage is higher than the threshold value.
Patent TW-382150-B (TW)
Title: Electricity machine
Inventor: YAMAGIWA TOKIO
IPC: H02B13/02
Filed: 1997-06-02
Granted: 2000-02-11
Abstract: The purpose of this invention provides a kind of electricity machine which employs the internal image of electricity machine for internal inspection. The structure of the machine comprises the container, the conductor allocated in the container, the switch connected to the conductor, the mechanism of as the moving part for operating switch, sealed with insulation media in the container of electricity machine and also accommodating the camera switch, mechanism or focusing portion of conductor and the  light guide connected with the focusing portion in the said container; and, constructed by pulling a part of the said light guide out of the container and mounting at the air-tight portion of the container.
Patent TW-349240-B (TW)
Title: Phase shift mask and manufacturing method therefor
Inventor: LIM SUNG-CHUL
IPC: G03F1/68
Filed: 1997-06-14
Granted: 1999-01-01
Abstract: A phase shift mask comprising: a substrate which is transparent with respect to exposure light; and a phase shifter pattern of one selected from a mixture and a solid solution of chromium oxide (Cr2O3) and alumina (Al2O3) which is formed on the substrate to expose a predetermined portion of the substrate.
Patent TW-334492-B (TW)
Title: Door positioning hinge
Inventor: ANDRES A BOLINAS
IPC: E05D7/00
Filed: 1997-07-02
Granted: 1998-06-21
Abstract: A door positioning hinge supports two closure members, and also allows the closure members to be rotated to open or to close. The door positioning hinge can be adapted to allow free-swinging of the closure members or alternatively to hold the closure members in various detent positions. In addition, the particular amount of force can be selected where desired which operates to hold the closure members in the respective detent positions. The operation of the door positioning hinge accommodates use with both vertically swinging or horizontally swinging closure members.
Patent TW-323349-B (TW)
Title: Circuit of keyboard-controlling computer power system
Inventor: SHIEH GUEY-MIN
IPC: G06F3/023
Filed: 1997-07-30
Granted: 1997-12-21
Abstract: A circuit of keyboard-controlling computer power system, used on computer power switch control, in which user only presses predefined key combinations to control switch of computer power system via keyboard, and also achieves security via user-defined key combination, comprises of the steps: From KBCLK and KBDAT signal input from keyboard, via one control circuit judging if they are predefined key combination of power switch, if yes, then from control circuit generating high pulse to main board, then from main board transmitting power ON or OFF signal to ATX power source, making ATX power ON or OFF.
Patent TW-367627-B (TW)
Title: Multicolor light emitting device
Inventor: CHEN HSING
IPC: H01L31/101
Filed: 1997-10-18
Granted: 1999-08-21
Abstract: The invention provides a kind of light emitting device for producing red, green, blue, three colors at the same time on single chip. The multicolor light emitting device employs the ultraviolet grains made of GaN which is used with the transparent object property for its grains and product to apply the insulation and reflection layer around the grains to make the light generated by the ultraviolet grains emit only from the bottom and the front. And, applying a layer of variable wave length material (fluorescent light powder) on the emitting face of ultraviolet grains to make it generate colored visible light. The ultraviolet grains are all over the chip and add fluorescent light powder of different colors, like red, green, blue, to make it as a LED grains with three colors and be used as the basic structure of LED monitor. The structure can be developed to become the LED color monitor for portable PC.
Patent TW-452943-B (TW)
Title: Manufacturing method for semiconductor integrated circuit device and the welding device thereof
Inventor: OHKUBO TATSUYUKI
IPC: H01L21/60
Filed: 1997-12-24
Granted: 2001-09-01
Abstract: A manufacturing method of μBGA-IC17 is provided to stabilize the S-shape of internal lead after welding by welding each electrode pad 14 of the chip 12 with each internal lead 7 through the insulation layer 10 of the fixed chip 12 on the belt carrier 2 with a plurality of internal leads 7 on a main surface. For welding the internal leads 7 on the electrode pad 14, it first uses the positioning hole of belt carrier 2 for supplying the chip 12 to a fixed position with respect to the welding tool. Next, the featured lead and electrode pad are used to recognize the positions of internal leads 7 and electrode pads 14. Then, the center line of the internal leads is recognized to locate the internal leads 7 on the chip 12 with welding tool. After pressing toward the base direction as the S-shape, the front end of the internal leads 7 is hot-pressed and welded with the electrode pads 14 by the welding tool.
Patent TW-360844-B (TW)
Title: System and method for pattern recognition
Inventor: ANDERHOLM ERIC J
IPC: G06F7/06
Filed: 1998-02-11
Granted: 1999-06-11
Abstract: System and method for pattern recognition. The method includes a method for generating a classifier from a set of collected sample patterns. The sample patterns are representative of data to be processed by the classifier and are converted to electronic signals to be manipulated by a programmed computer. Further, the method generates and identifies a number of transformers that map between sample patterns of the same pattern-type in the collected sample patterns. The method uses the transformers and the sample patterns to generate additional patterns. The method forms a table that contains the generated patterns and an indication of the pattern-type to which each pattern belongs. The classifier is used for recognizing patterns. First, a digital image of one or more physical items is generated. Features are extracted from the digital image and a numerical representation of each feature is generated. The numerical representation is used as a reference to look into a look-up table to determine candidate patterns wherein the look-up table was generated by using the technique described above. A candidate pattern is selected using selected validation modules that determine the pattern-type of the pattern.
Patent TW-371353-B (TW)
Title: Method of producing MOS resistor and capacitor bottom electrode
Inventor: HUANG GUO-LIANG
IPC: H01L21/02
Filed: 1998-07-29
Granted: 1999-10-01
Abstract: A method of producing a MOS resistor and a capacitor bottom electrode, comprises providing a semiconductor substrate having an isolation structure and an active region, the semiconductor substrate being formed with a P well and an N well therein, and the active region being formed with a silicon nitride layer thereon; forming a polysilicon layer on the semiconductor substrate; forming an oxide layer on the polysilicon layer and carrying out doping which includes doping a first dopant into the polysilicon layer, then doping a second dopant into a portion of the polysilicon layer in which the concentration of the second dopant is higher than the concentration of the first dopant; removing a portion of the polysilicon layer thereby at least exposing all silicon nitride layer. In the polysilicon layer remained on the insulation structure, the portion doped with the second dopant is used as the resistor, and the portion only doped with the first dopant is used as the capacitor bottom electrode.
Patent TW-409378-B (TW)
Title: Semiconductor device
Inventor: OTSUKA SHIRO
IPC: H01L23/48
Filed: 1996-10-05
Granted: 2000-10-21
Abstract: The semiconductor device of this invention is to use soft solder to fix the semiconductor chip on the semiconductor island of the heat sink, to settle the ditch preventing the outflowing of said soft solder, to settle the assigned region of the first bonding position on the regulated region outside said ditch, to bond the bonding line connected with the above-mentioned semiconductor chip inside said assigned region so that when the initial setting of the line bonding, the workers can easily recognize the initial position of the first bonding; and then, they could determine certainly the bonding point. So that it could inhibit the uncertain initial position that causes the decreasing of working efficiency, or problems such as causing the characteristic of the semiconductor apparatus unstable due to the change of staff and the misalignment of said initial position.
Patent TW-479110-B (TW)
Title: Turbo molecular pump
Inventor: MAEJIMA YASUSHI
IPC: F04D19/04
Filed: 1998-10-03
Granted: 2002-03-11
Abstract: A turbo molecular pump which can prevent the lowering in vacuum property while maintaining the increased throughput of the gas to be discharged during a normal operation. An axial interval between a rotor vane and a stator vane provided close to a inlet port is set so that the gas can be dealt as molecular flow under a condition that the pressure in the inlet port during the normal operation is not less than 10 mTorr. Since whether or not the gas can be dealt as the molecular flow is delimited by a mean free path of gas molecular, the above axial interval is set based on the mean free path. With this arrangement, the gas can be dealt as the molecular flow under the condition of pressure not less than 10 mTorr during the normal operation, and thus sufficient discharge performance can be obtained. Consequently, even if the throughput of the gas supplied to a vacuum chamber during the normal operation is increased, it is possible to ensure the required pressure (vacuum property) while maintaining the increased throughput.
Patent TW-486451-B (TW)
Title: Apparatus for supplying ultra-pure water containing ozone
Inventor: MORITA HIROSHI
IPC: C02F1/78
Filed: 1998-11-05
Granted: 2002-05-11
Abstract: The present invention is provide an apparatus for supplying ultra-pure water containing ozone, which can suppress the lowering of dissolved ozone in the supplying pipes system and maintain an approximately fixed ozone density in the whole supplying system, and is applicable to a supply and circulation system having long pipes. The apparatus for supplying ultra-pure water containing ozone is characterized in comprising (A) main pipes for supplying ultra-pure water, (B) gas supplying apparatus containing ozone connected with said main pipe for supplying ultra-pure water, (C) branch pipe connecting with the use point branching from the main pipes, and (D) gas/liquid separation apparatus disposed on the branch pipes.
Patent TW-464939-B (TW)
Title: A method of implementing electron beam lithography using uniquely positioned alignment marks and a wafer with such alignment marks
Inventor: KOJIMA YOSHIKATSU
IPC: H01J37/304
Filed: 1998-12-04
Granted: 2001-11-21
Abstract: A plurality of alignment marks are formed on a semiconductor wafer in an area which is separate from or non-coincident with outside a plurality of chip regions, such as in a periphery of the wafer, irrespectively of the size and arrangement of the chip regions. Such wafers, which are previously manufactured, are then subjected to electron beam exposure in accordance with circuit design data. The electron beam exposure is typically implemented through global alignment using the alignment marks.
Patent TW-384336-B (TW)
Title: Water capturing apparatus
Inventor: HANYA TOSHIO
IPC: B01D53/26
Filed: 1999-01-08
Granted: 2000-03-11
Abstract: A water capturing apparatus comprises an air introducing machine 2, a heater 2a for raising temperature of the air introduced, an equipment 5 for reducing a pressure of the air introduced by the air introducing machine 2, an air humidity converting machine 1 equipped with a cooler 7 for capturing a water by cooling the air introduced, and an outlet 9 for draining the water captured by the air humidity converting machine 1.
Patent TW-393305-B (TW)
Title: Eyelash curling device
Inventor: CHO YONG-HOON
IPC: A45D2/48
Filed: 1999-02-25
Granted: 2000-06-11
Abstract: This invention relates to an eyelash curling device. It has a main body, a formation member, a heating member, and a pressing member that moves upward and downward, and a lifting member, an electric switch, and an indicator. By simultaneously heating and pressing the eyelashes, the eyelashes will curl quickly, automatically, safely and beautifully. Even a beginner user can achieve the desired effect. By means of the automatic temperature control in an appropriate range, it enhances the safety, extends the battery life by saving energy.
Patent TW-413912-B (TW)
Title: Process for controlling resin bleeding in integrated circuit packaging
Inventor: ABYS JOSEPH ANTHONY
IPC: H01L23/495
Filed: 1999-04-02
Granted: 2000-12-01
Abstract: A method for controlling resin bleeding on integrated circuit packages is disclosed. Resin bleeding is controlled by lowering the surface energy of an IC substrate to less than or about equal to the surface energy of an adhesive which attaches IC units thereto. The IC substrate is treated with a material that lowers its surface energy. The material layer forms a less wettable surface on the IC substrate which inhibits resin bleeding when the adhesive applied thereto is hardened. The material layer is formed from a solution of a polymer in a solvent. Suitable polymers include polyfluorinated hydrocarbon compounds.
Patent TW-I237630-B (TW)
Title: Process for preparing 2,6-dialkylnaphthalene
Inventor: MOTOYUKI MASAHIRO
IPC: C07C2/00
Filed: 1999-04-08
Granted: 2005-08-11
Abstract: A process for producing 2,6-dialkylnaphthalene from a hydrocarbon feedstock that contains at least one component selected from the group consisting of dialkylnaphthalene isomers, monoalkylnaphthalene isomers, polyalkylnaphthalenes, and naphthalene, is provided that includes the following steps: (I) separating the hydrocarbon feedstock and/or a dealkylation product fed from step (III) into a naphthalene fraction, a monoalkylnaphthalene fraction, a dialkylnaphthalene fraction and a remaining products fraction; (II) separating and purifying 2,6-dialkylnaphthalene from the dialkylnaphthalene fraction of step (I); (III) dealkylating the hydrocarbon feedstock and/or the remaining products fraction of step (I) and feeding the dealkylation product to step (I); and (IV) alkylating the naphthalene and monoalkylnaphthalene fractions of step (I); wherein the hydrocarbon feedstock is fed to step (I) or step (III).
Patent TW-406314-B (TW)
Title: Method of manufacturing transistor having metallic gate electrode
Inventor: SHIH JIAW-REN
IPC: H01L21/28
Filed: 1999-04-27
Granted: 2000-09-21
Abstract: The present invention provides a method of manufacturing transistor having metallic gate electrode comprising the following steps of providing a semiconductor substrate and forming a mask layer, and then defining the mask layer to the semiconductor substrate to form a ditch, defining the scope of the metallic gate electrode of the transistor, forming the metallic gate electrode of the transistor, and then after forming a gate dielectric layer in the ditch, forming the metal gate electrode of the transistor on the gate dielectric layer, and forming drain and source areas on the semiconductor substrate at the both side of the metal gate electrode and hence a transistor is formed.
Patent TW-589157-B (TW)
Title: Method for producing a concentrate of an edible plant
Inventor: LIOU DE-SHAN
IPC: A23L2/38
Filed: 1999-04-30
Granted: 2004-06-01
Abstract: A method for producing a concentrate of an edible plant comprises subjecting a plant to a preliminary washing process, a dehydrating process, a cutting process, and a juicing process; loading the processed plant juice into a high pressure concentrating pot for concentrating the plant juice into a colloid; using a low temperature fast freezing process to process the colloid into a semi-product for storage; and prior to application, reducing the semi-product into an edible product at a suitable pressure and a suitable temperature.
Patent TW-417193-B (TW)
Title: Dry etching apparatus and its manufacturing method
Inventor: KAMIIDE KOYO
IPC: H01L21/3065
Filed: 1999-07-01
Granted: 2001-01-01
Abstract: In a dry etching apparatus, a susceptor cover is attached to a substrate susceptor to shape it into a tapered contour, and no other element is positioned around a wafer support plane to ensure a flatness. A wafer positioning mechanism is provided near the perimeter of the wafer support plane, and it is raised to extend to a level higher than the wafer support plane and used in this status only upon setting or removing the wafer.
Patent TW-518635-B (TW)
Title: Method for providing multi-color illumination
Inventor: CHEN YI-MING
IPC: H01L21/00
Filed: 1999-07-13
Granted: 2003-01-21
Abstract: The present invention provides a method for providing multi-color illumination, which includes the following steps: providing a dispersion prism between a semiconductor light source and a lens, wherein the prism has an input located in front of the light source for receiving the light output from the light source, and the prism can divide the light output into several color components, and these color components will emit from an output of the prism in different angles. The lens is located in front of the output of the prism, so that the apex of the conical focusing area combined with the lens is located at the output of the prism; and, changing the location of one of the prisms and the light source relative to the light source and the location of another prism. When the light source and the location of one of the prisms are changed, to activate the light source can align the selected one of these color components with the conical focusing area of the lens.
Patent TW-417186-B (TW)
Title: Generation of exposure data having hierarchical structure
Inventor: KOIKE KAZUNORI
IPC: G03F1/68
Filed: 1999-07-26
Granted: 2001-01-01
Abstract: A method of generating exposure data includes the steps of generating first exposure data representing a common portion shared by different exposure images, generating second exposure data representing portions which differ between the different exposure images, and defining at least one non-exposure area with regard to the first exposure data, the at least one non-exposure area corresponding to the portions that differ between the different exposure images and defining an area where no exposure is performed by the first exposure data.
Patent TW-451461-B (TW)
Title: Semiconductor integrated circuit device and method of manufacturing the same
Inventor: NAKAMURA YOSHITAKA
IPC: H01L27/108
Filed: 1999-08-10
Granted: 2001-08-21
Abstract: The purpose of this invention is to improve the connection reliability of power supply wiring connected to the electrode of information storage capacitive elements of a DRAM. The solving mean is comprises the following. The formation of a through hole for connecting the information storage capacitive element formed over the memory cell selection MISFET and the power supply wiring is performed in a process different from the formation of a through hole for connecting the second wiring layer of a peripheral circuit formed over the information storage capacitive element and the first wiring layer.
Patent TW-546749-B (TW)
Title: Method of forming embedded metal wiring
Inventor: SUGAI KAZUMI
IPC: H01L21/60
Filed: 1999-08-19
Granted: 2003-08-11
Abstract: The method of forming embedded metal wiring disclosed in the present invention includes the following steps: forming the conduction wire trench, the barrier metal film and the conducting metal film; exposing the barrier metal film by using the polishing liquid and an oxidizing agent with the first concentration to polish the conducting metal film; and forming a wiring by polishing and removing the exposed barrier metal film through the use of a polishing liquid and an oxidizing agent having a second concentration lower than the first concentration. The excessive polishing of the conductive metal occurs when an oxidizing agent has a larger concentration than that of the oxidizing agent needed to polish and remove the barrier metal film. In order to attain the smooth removal of the barrier metal film and to prevent the excessive removal of the conductive metal, the oxidizing agent having a lower concentration is employed in the polishing of the conductive metal.
Patent TW-440894-B (TW)
Title: Processing system
Inventor: TATEYAMA KIYOHISA
IPC: H01L21/00
Filed: 1999-11-11
Granted: 2001-06-16
Abstract: A processing system includes a transport path, a plurality of first processing portions arranged in a first zone along the transport path for performing vacuum processing of processed objects; a plurality of second processing portions arranged in a second zone along the transport path for performing atmospheric processing of the processed objects; and transport means movably arranged on the transport path for transfer of the processed objects between the first and second zones.
Patent TW-488019-B (TW)
Title: Semiconductor device and fabrication method of the same semiconductor device
Inventor: OKUSHIMA MOTOTSUGU
IPC: H01L23/522
Filed: 1999-12-24
Granted: 2002-05-21
Abstract: An object of the present invention is to provide a semiconductor device having a buried metal wiring structure and a contact structure passing through a film having hydrogen barrier function for electrically connecting respective wiring layers each other and further having a hydrogen diffusing passage allowing hydrogen to reach an interior of the semiconductor device so that an annealing can be performed effectively by using a forming gas and a fabrication method thereof. The hydrogen diffusing passage is provided by providing an opening in a portion of a layer other than a portion thereof immediately below the metal wiring and allows hydrogen to pass the opening to lower layers.
Patent TW-453099-B (TW)
Title: Multi-functional digital telephone
Inventor: CHEN WEN-YUAN
IPC: H04M1/78
Filed: 1999-12-29
Granted: 2001-09-01
Abstract: A digital telephone is equipped with the following functions: message recording, on-line recording, voice dialing, tone adjustment, and voice pace adjustment. Moreover, each function shares its own programming code and parameter with other functions. For example, the parameter required for voice recognition can be obtained by transforming the parameter for voice compression. The functions of voice pace adjustment and tone adjustment share the same program. A method for processing digital voice signal is provided, which is applied in sampling and processing digitized voice data to enable the digital telephone equipped with the functions of tone adjustment and voice pace adjustment.