Patent GB-1019080-A (GB)
Title: Process for the production of semiconductor assemblies
IPC: C23C16/00
Filed: 1963-08-06
Abstract: <PICT:1019080/C6-C7/1> In producing a semi-conductor assembly, semi-conductor material is transferred from the upper surface of a support 2, Fig. 1, heated at 3 to the lower surface of a semi-conductor carrier 1, the transfer being effected by means of a gaseous atmosphere free from H2 and hydrogen halides but containing a halogen and/or a hydrogen-free halogen compound which forms a gaseous halogen compound with the semi-conductor material from the upper surface of the support, the compound then decomposing to deposit the semi-conductor material on the lower surface of the carrier.  One or more layers of semi-conductor material may be deposited.  The gaseous halogen or halogen atmosphere may be diluted with argon. Specific examples are for depositing (a) Si on Si e.g. using SiCl4 or Cl2, (b) GaAs on GaAs, (c) GaAs on Ge, (d) ZnS on ZnS, (e) ZnS on Si, (f) depositing Ge, (g) depositing AIIIBV or AIIBVI compounds. Depositions (b), (c), (d) and (e) employ I vapour.  To prevent removal of material from the upper side of the semi-conductor carrier member, it may be provided with a cover of quartz, SiC, BN or Al2O3 or may be masked by reacting the upper side with O2, water vapour or CH2Cl2 to produce the oxide or carbide.  The lower surface of the carrier may be polished plane.  Spacers may be employed between the support and carrier, Fig. 4 (not shown).  By the process, junctions between layers of different conductivity and/or different conductivity type may be produced.  Figs. 5 and 6 (not shown) illustrate apparatus where assemblies such as shown in Fig. 1 are supported on inductively heated members 14 and 18 and where gases are supplied to and removed from the apparatus at 10 and 11. The reaction vessels may be surrounded by aluminium reflectors.  Prior to deposition, the semi-conductor carrier and the support may be cleaned by heating in vacuo or in H2.  The deposition may be carried out under reduced pressure, e.g. Si may be deposited using SiCl4 at 0.1 atmosphere.ALSO:<PICT:1019080/C1/1> In producing a semi-conductor assembly, semi-conductor material is transferred from the upper surface of a support 2, Fig. 1, heated at 3 to the lower surface of a semi-conductor carrier 7, the transfer being effected by means of a gaseous atmosphere free from H2 and hydrogen halides but containing a halogen and/or a hydrogen-free halogen compound which forms a gaseous halogen compound with the semi-conductor material from the upper surface of the support, the compound then decomposing to deposit the semi-conductor material on the lower surface of the carrier.  One or more layers of semi-conductor material may be deposited.  The gaseous halogen or halogen atmosphere may be diluted with argon. Specific examples are for depositing: (a) Si on Si e.g. using SiCl4 or Cl2 (b) GaAs on GaAs  (c) GaAs on Ge  (d) ZnS on ZnS  (e) ZnS on Si  (f) depositing Ge  (g) depositing AIII BV or AII BVI compounds. Depositions (b), (c), (d) and (e) employ I vapour.  To prevent removal of material from the upper side of the semi-conductor carrier member, it may be provided with a cover of quartz, SiC, BN or Al2O3 or may be masked by reacting the upper side with O2, water vapour or CH2Cl2 to produce the oxide or carbide.  The lower surface of the carrier may be polished plane.  Spacers may be employed between the support and carrier (Fig. 4, not shown).  By the process, junctions between layers of different conductivity and/or different conductivity type may be produced.  Figs. 5 and 6 (not shown) illustrate apparatus where assemblies such as shown in Fig. 1 are supported on inductively heated members 14 and 18 and where gases are supplied to and removed from the apparatus at 10 and 11.  The reaction vessels may be surrounded by aluminium reflectors. Prior to deposition, the semi-conductor carrier and the support may be cleaned by heating in vacuo or in H2.  The deposition may be carried out under reduced pressure, e.g. Si may be deposited using SiCl4 at 0.1 atmosphere.