baber/WOPTO huggingface dataset:
Patent TW-548502-B (TW)
Title: Manufacturing method of a liquid crystal display
Inventor: OZAKI KIYOSHI
IPC: H01L27/12
Filed: 1999-12-23
Granted: 2003-08-21
Abstract: A manufacturing method of a liquid crystal display which can reduce a manufacturing cost by reducing the number of mask is provided. A gate insulating film 43, a semiconductor film 45 and a silicon nitride film 47 are laminated on a substrate 41 on which a gate bus line 3 is formed, a back exposure is performed by using a gate bus line as a mask, and a channel protecting film 47 being along the bus line is formed by patterning the silicon nitride film 47. Two holes 25 and 27 for element separation are opened at two positions where a source electrode 17 and a drain electrode 15 are sandwiched along the gate bus line 3. A thin film transistor, which structures an operational semiconductor with the semiconductor film which is electrically separated from other pixel areas film by being sandwiched by the holes 25 and 27 for element separation and a gate electrode at the area between the two holes for element separation of the gate bus line 3, is formed.
Patent TW-469582-B (TW)
Title: Metal interconnect structure for promoting electromigration lifetime and decreasing conducting wire area
Inventor: SHIE GUO-HUA
IPC: H01L21/768
Filed: 2000-01-11
Granted: 2001-12-21
Abstract: The present invention relates to a kind of interconnect structure, which can be used to extend the electromigration lifetime in addition to decreasing device size, and is the application of bamboo joint effects and the Bragg formula. The metal interconnect structure disclosed by the present invention contains multiple parallel metal lines and the line width of the respective metal line is narrower than the critical line width of the used metal. In addition, the total area occupied by the parallel interconnect structure is smaller than the area occupied by the conventional single interconnect such that the device area can be reduced. Furthermore, as compared with the conventional interconnect, this structure can be optimized to maintain at least the same electromigration lifetime and sustain the interconnect status with at least the same amount of current density so as to make device performance become even better.
Patent TW-465223-B (TW)
Title: Method to detemine the calibration position of the upper transparent adapter
Inventor: LIAU JR-YI
IPC: H04N1/047
Filed: 2000-02-25
Granted: 2001-11-21
Abstract: The present invention relates to a method to determine the calibration position of the upper transparent adapter, mainly by analyzing the characteristic relationship among the lamp tube, white board and CCD device to obtain different characteristic curves. When the CCD device detects the white board of the scanner, the brightness difference between every two neighboring lines will have a segment in a curve, which shows that the difference value between every two neighboring lines is very little and almost zero, so that it is able to use this characteristic to find this segment of flat region during the white-board calibration, thereby the best position can be mapped, which effectively increases the scanning image quality.
Patent TW-480334-B (TW)
Title: Photometric gas detection system and method
Inventor: OSTRANDER CLINTON R
IPC: G01N21/01
Filed: 2000-05-05
Granted: 2002-03-21
Abstract: A photometer including an elongated sample cell having a first end, a second end, and a passageway extending between the first end and the second end. Preferably, a ratio of a length of the sample cell to a lateral dimension of the passageway is at least 100 to 1. A first quartz window assembly is located at the first end of the sample cell and has a first port communicating with the passageway proximate to the first end, and a second quartz window assembly is located at the second end of the sample cell and has a second port communicating with the passageway proximate to the second end. An ultraviolet lamp is positioned to emit ultraviolet light through the first quartz window, the passageway, and the second quartz window, and an ultraviolet detector is positioned to receive the ultraviolet light emanating from the second quartz window. Preferably, the sample cell is operated at about ambient temperature, and the volume of the sample cell is no greater than about 0.2 cc to provide fast transient response and high sensitivity.
Patent TW-451025-B (TW)
Title: Electronic password lock with operation mode of random number input and method thereof
Inventor: JIAN RUNG-DUNG
IPC: E05B49/00
Filed: 2000-03-29
Granted: 2001-08-21
Abstract: The present invention relates to an electronic password lock with an operation mode of random number input and the method thereof. Combinations mixed with passwords and random numbers are inputted from a pushbutton unit. By detecting the input numbers in the combinations, a central control unit is applied to authenticate the required password and the password stored in the memory unit. Then, by means of a relay control unit, the password lock can be operated.
Patent TW-I236461-B (TW)
Title: Glass composition, its mixture and paste, green sheet, insulator, dielectric substance, thick film and FPD using the same
Inventor: TOYODA SEIJI
IPC: C03C3/066
Filed: 2000-03-30
Granted: 2005-07-21
Abstract: The object of the invention is to provide a glass composition that is used to produce a glass substrate of FPD and dose not make the glass substrate camber. The image of FPD produced by the glass composition will not crosstalk, and the glass substrate has an improved reflectivity. The glass composition of the invention contains 5 to 35 mole% of P2O5, 50 to 65 mole% of ZnO, 0.1 to 10 mole% of SiO2, 0.1 to 10 mole% of B2O3, 1 to 20 mole% of one or more oxides of alkaline earth metal selected from the group consisting of MgO, CaO, SrO and BaO, and 0.1 to 10 mole% of Al2O3.
Patent TW-586045-B (TW)
Title: Fabrication method of liquid crystal display device
Inventor: SAWAYAMA YUTAKA
IPC: G02F1/1335
Filed: 2000-06-23
Granted: 2004-05-01
Abstract: A dry film resist is used to form an interlayer insulating film in a process for fabricating a liquid crystal display device of the POP structure. The dry film resist is formed by applying a photosensitive resin on a base film to a uniform thickness, and a protective film layer is formed on a surface of the photosensitive resin film thus formed. From the dry film resist guided to the vicinity of a glass substrate, the protective film is removed immediately before transfer. Then, the photosensitive resin is heated and pressed against the foregoing glass substrate by a transfer roller, whereby the interlayer insulating film is formed.
Patent TW-539570-B (TW)
Title: Method and apparatus for removing harmful perfluorocarbon gas or a perfluoro compound
Inventor: IMAMURA KEIJI
IPC: B01D53/34
Filed: 2000-07-04
Granted: 2003-07-01
Abstract: The present invention is intended to provide a harm-removing method capable of decomposing and removing PFC components at a high removal rate at a low temperature (to achieve a low thermal energy consumption). In other words, the present invention provides a method for removing perfluorocarbon gases or perfluoro compounds, which is characterized in that at least one of a hydrocarbon gas or NH3 gas is mixed with an exhaust gas which is discharged from a production apparatus and contains perfluorocarbon or perfluoro compounds; then the mixed gas is thermally decomposed in a non-oxidizing atmosphere.
Patent TW-496782-B (TW)
Title: Appliance for changing roller sponge
Inventor: CHEN TING-GUO
IPC: B29C63/18
Filed: 2000-09-25
Granted: 2002-08-01
Abstract: The present invention discloses an appliance for changing roller sponge, which comprises a longitudinal cover and preferably a base. The cover has a bushing portion and a pushing portion in longitudinally connection; wherein the bushing portion has a tube body, and a hollow portion located in the tube body and facing toward one opening therein. The outer diameter of the tube body is slightly larger than the unexpanded inner diameter of the roller sponge. The inner diameter of the hollow portion is configured as the size for the axis being able to smoothly insert into one of the openings. Thus, the sponge can be easily invaginated onto the axis with the simple cover.
Patent TW-I265935-B (TW)
Title: Organometal catalyst compositions
Inventor: MCDANIEL MAX P
IPC: B01J27/125
Filed: 2000-09-27
Granted: 2006-11-11
Abstract: This invention provides catalyst compositions that are useful for polymerizing at least one monomer to produce a polymer. This invention also provides catalyst compositions that are useful for polymerizing at least one monomer to produce a polymer, wherein said catalyst composition comprises a post-contacted organometal compound, a post-contacted organoaluminum compound, and a post-contacted fluorided silica-alumina.
Patent TW-492223-B (TW)
Title: Self terminating coaxial coupler
Inventor: BRUSSARD W BROOKS
IPC: H01R24/44
Filed: 2001-01-20
Granted: 2002-06-21
Abstract: A described embodiment of the present invention includes a self terminating coaxial coupler having: a conductive casing having an opening through the conductive casing, the opening having a first end; an insulating sleeve inserted in the opening; a conductive spring connected to a terminal; an insulative plug in the first end, the insulative plug having a central opening for receiving the central conductor of a coaxial cable at the first end; a first plate conductively connected to the conductive spring; and a resistive element at the first end conductively connected to the conductive casing and positioned such that the conductive spring holds the first plate in contact with the resistive element when the cable is not connected to the self terminating coaxial coupler and the central conductor of the cable separates the first plate from the resistive element when the cable is connected to the self terminating coaxial coupler. A second embodiment includes a self terminating coaxial coupler having: a conductive casing having an opening through the conductive casing from a first end of the opening to a second end of the opening; an insulating sleeve inserted in the opening; a conductive sleeve for receiving the central conductor of a first coaxial cable at the first end; a conductive spring conductively connected to the conductive sleeve; an insulative plug in the second end, the insulative plug having a central opening for receiving the central conductor of a second coaxial cable at the second end; a first plate conductively connected to the conductive spring; and a resistive element at the second end conductively connected to the conductive casing and positioned such that the conductive spring holds the first plate in contact with the resistive element when the second cable is not connected to the self terminating coaxial coupler and the central conductor of second cable separates the first plate from the resistive element when the second cable is connected to the self terminating coaxial coupler.
Patent TW-460365-B (TW)
Title: Station in position control equipment
Inventor: BAE KEE-SUN
IPC: B23Q16/00
Filed: 2001-01-10
Granted: 2001-10-21
Abstract: Station in a position control equipment including an XY plate movably mounted on a base in an X direction and a Y direction, a first actuator coupled to XY plate titled by an angle with respect to the X direction, and a second actuator coupled to XY plate titled by an angle with respect to the Y direction, wherein the first actuator and the second actuator are operative on the same time to move the XY plate in the X direction or the Y direction, thereby permitting to reduce a height between a base and a table, endure a heavier load, cope with an unbalanced load, enhance an accuracy of position control, and simplify station structure.
Patent TW-494690-B (TW)
Title: Method for performing cell and URA updates in a radio access network
Inventor: RUNE GORAN
IPC: H04Q7/00
Filed: 2000-10-26
Granted: 2002-07-11
Abstract: A method for performing Cell-Updates or URA-Updates in a mobile communication system is disclosed, whereby a user equipment (UE) sends a Cell-Update message or URA-Update message to an SRNC. The transported Cell-Update message or URA-Update message includes a sequence counter which is incremented each time the UE sends such a message to the SRNC. The SRNC stores the value of the sequence counter for each Cell-Update message or URA-Update message received and acknowledged. If the SRNC receives a Cell-Update message or URA-Update message with a corresponding sequence counter value that is lower than the sequence counter value stored for the previously received Cell-Update message or URA-Update message, then the SRNC ignores the received Cell-Update message or URA-Update message. Also, the SRNC does not store the sequence counter value for the ignored, received Cell-Update message or URA-Update message.
Patent TW-544404-B (TW)
Title: Bicycle hub for tangential spokes
Inventor: TABE KOSHI
IPC: B60B27/02
Filed: 2000-11-14
Granted: 2003-08-01
Abstract: A bicycle hub is provided for use with tangential bicycle spokes having a straight section and a bent end with an enlarged head such that straight section extends at an angle of about 95 DEG relative to the bent end. The bicycle hub basically has a hub axle and a hub body. The hub axle has a center axis extending between a first end and a second end. The hub body has an interior passageway with the hub axle being rotatably supported therein. The hub body also has a set of first spoke openings circumferentially arranged around the hub body. Each of the first spoke openings having an insertion portion with a large width that permits the enlarged head of a tangential spoke to pass therethrough and a retaining portion with a width that is smaller than the width of the insertion portion to retain the enlarged head of the tangential spoke therein. Each of the retaining portions of the first spoke openings is defined by a cylindrical surface with a center longitudinal axis that is angled such that said center longitudinal axis of each of the retaining portions does not pass through the center axis of the hub axle.
Patent TW-506880-B (TW)
Title: Grinding stone, process for its production and grinding method employing it
Inventor: MIURA SHIRO
IPC: B24D3/02
Filed: 2000-12-28
Granted: 2002-10-21
Abstract: A grinding stone using a metal material as the main material of a bonding material, which comprises: (A) abrasive grains of at least one member selected from the group consisting of diamond, cubic boron nitride, silicon carbide and aluminum oxide, (B) a bonding material made of at least one metal member selected from the group consisting of cobalt, nickel and copper, or a bonding material made of an alloy comprising at least one member selected from the group consisting of cobalt, nickel and copper, and at least one member selected from the group consisting of iron, silver, tin, zinc and tungsten, and (C) amorphous carbon as an adjuvant, wherein the abrasive grains (A) and the amorphous carbon (C) are distributed in the bonding material (B) in a sea-island structure.
Patent TW-479327-B (TW)
Title: Method of forming MOS/CMOS devices with dual or triple gate oxide
Inventor: DONG ZHONG
IPC: H01L21/8234
Filed: 2001-02-02
Granted: 2002-03-11
Abstract: A method of fabricating multiple thickness gate oxide layers, comprising the following steps. A silicon substrate having at least a first and second gate oxide region is provided. A first gate oxide layer is formed over the silicon substrate within the first gate oxide region. The first Sate oxide layer having a first predetermined thickness. A first layer of polysilicon is deposited and planarized over the first gate oxide layer. The first planarized layer of polysilicon and the first gate oxide layer are masked and etched within the second gate oxide region, exposing the silicon substrate within the second gate oxide region. A second gate oxide layer is formed over the exposed silicon substrate within the second gate oxide region. The second gate oxide layer having second predetermined thickness. A second layer of polysilicon is selectively deposited over the second gate oxide layer. The first and second layers of polysilicon are planarized to a uniform thickness. Whereby the second gate oxide layer predetermined thickness is less than the first gate oxide layer predetermined thickness.
Patent TW-594887-B (TW)
Title: Process for producing semiconductor device and semiconductor device
Inventor: YOSHINO KAZUHIKO
IPC: H01L21/336
Filed: 2001-02-20
Granted: 2004-06-21
Abstract: A process for producing a semiconductor device comprises the steps of: (a) forming a gate electrode on N channel and P channel transistors forming regions (N-Tr region and P-Tr region) on a semiconductor substrate; (b) forming a side wall spacer on a side wall of the gate electrode; (c) covering the P-Tr region with a resist, and forming a source/drain region on the N-Tr region by ion implantation using the resist, the gate electrode and the side wall spacer as a mask; (d) removing a part of the side wall spacer of the gate electrode in the N-Tr region; (e) forming an LDD region on the N-Tr region by ion implantation using the resist, the gate electrode and the resulting side wall spacer as a mask; (f) removing the resist; (g) covering the N-Tr region with a resist, and forming a source/drain region on the P-Tr region by ion implantation using the resist, the gate electrode and the side wall spacer as a mask; (h) removing a part of the side wall spacer of the gate electrode in the P-Tr region; and (i) forming an LDD region on the P-Tr region by ion implantation using the resist, the gate electrode and the resulting side wall spacer as a mask.
Patent TW-499299-B (TW)
Title: Method for producing pure gold, silver-qualitied wrist-watch band
Inventor: LIN SEN-YI
IPC: A44C5/00
Filed: 2001-03-05
Granted: 2002-08-21
Abstract: A method for producing pure gold, silver-qualitied wrist-watch band comprises pressing pure gold, silver-qualitied molded rods into a chain knot of unit block, in which the two corresponding edges of the chain knot use the pitch match of the chip groove and the protrusion block to form a chain knot belt with a predetermined length; adhering a tape on the back of the chain knot belt; drilling a hole at the gomphosis position of the two sides of the chain knot belt; using a pivotal element to pivotally connect each chain knot; using a cleaning agent to clean the chain knot belt; peeling off the tape and performing a coarse polishing on the bottom surface, the two sides and the top surface of the chain knot belt; adhering a tape on the top surface of the chain knot belt and performing a fine polishing on the bottom surface and the two sides of the chain knot belt; adhering a tape on the bottom surface that had been subjected to a fine polishing and peeling off the tape from the top surface of the chain knot belt; performing a fine polishing on the top surface; peeling off the tape from the bottom surface of the chain knot belt; using a cleaning agent to clean the top and bottom surface of the chain knot belt; thereby forming a pure gold, silver-qualitied wrist-watch band.
Patent TW-499716-B (TW)
Title: Manufacture method of growing silicon germanium carbon film on silicon substrate
Inventor: FANG YEAN-KUEN
IPC: H01L21/31
Filed: 2001-03-12
Granted: 2002-08-21
Abstract: This invention provides a manufacture method of growing silicon germanium carbon film on silicon substrate, which includes steps of: providing a silicon substrate; placing the silicon substrate into a chemical vapor deposition chamber; and introducing gases required to grow silicon germanium carbon (Si1-x-yGexCy) film and adjusting flow rate to grow silicon germanium carbon film using chemical vapor deposition, in which the gases include propane (C3H8) for use as carbon source for the silicon germanium carbon film.
Patent TW-496785-B (TW)
Title: Wrapped foam swab
Inventor: FORREST EDWARD J JR
IPC: B08B11/00
Filed: 2001-04-27
Granted: 2002-08-01
Abstract: A swab for cleaning electrical and particularly fiber optic connectors includes an elongated handle defining a longitudinal axis and having a cleaning head end and a grasping end. The swab includes a wrapped foam cleaning end. The wrapped foam cleaning end is formed from an elongated strip of microporous foam that is spiral wound about the cleaning end of the handle and is formed having a substantially flat cleaning end. A method for making the swab is also disclosed.
Patent TW-594922-B (TW)
Title: Interconnect structure with metal spacer and manufacturing method thereof
Inventor: HSUE CHEN-CHIU
IPC: H01L21/768
Filed: 2001-05-23
Granted: 2004-06-21
Abstract: This invention discloses an interconnect structure with metal spacer and a manufacturing method thereof. A substrate is provided, the surface of the substrate has a plurality of interconnects disposed thereon. A first metal layer is formed on the interconnect and substrate surface. An etching back process is performed on the first metal layer to expose the top of the interconnect and the substrate surface so that the residual first metal layer on the side wall of the interconnect becomes a first metal spacer. A second metal layer is formed on the exposed surface of the interconnect, the substrate, and the first spacer. An etching back process is performed on the second metal layer to expose the top of the interconnect and the substrate surface so that the residual second metal layer on the surface of the first spacer becomes a second metal spacer.
Patent TW-530197-B (TW)
Title: Method and apparatus for using calibrated delay elements with input/output circuitry
Inventor: CHAO CHI-YEU
IPC: G01R31/3193
Filed: 2001-05-31
Granted: 2003-05-01
Abstract: Input/output (I/O) clock phase adjustment circuitry for use with I/O buffer circuitry of an integrated circuit chip. In one embodiment, an integrated circuit chip includes a phase adjustment circuit coupled to receive a system clock. The phase adjustment circuit generates an I/O clock coupled to be received by an I/O buffer circuit of an integrated circuit chip for I/O data transfers in a system. The phase adjustment circuit includes a phase locked loop (PLL) circuit coupled to receive the system clock through a first delay circuit. The I/O clock generated by the PLL circuit is received through a second delay circuit at a feedback clock input of the PLL circuit. The first and second delay circuits are used to control the phase of the I/O clock generated by the PLL circuit relative to the system clock. In one embodiment, a third delay circuit is included in an I/O data path of the I/O buffer circuit of the integrated circuit. The third delay circuit enables input and output data transmissions from the integrated circuit to be clocked, in effect, out of phase with the I/O clock generated by phase adjustment circuit.
Patent TW-582111-B (TW)
Title: Semiconductor chip and semiconductor device therefor
Inventor: ALLEN ARCHIBALD J
IPC: H01L27/12
Filed: 2001-07-11
Granted: 2004-04-01
Abstract: A structure for a semiconductor chip which includes a first region having first cells for storing and processing data, and a second region outside the first region having OPC structures, wherein the OPC structures comprise decoupling capacitors. The line widths of the active gates of first cells are the same size or similar in size as the OPC structures. The OPC structures reduce proximity effects of active devices in the first cells, and comprise N-type FETs and P-type FETs, that are located in the second region. The OPC structures may have a width greater than the first cells. The second region can be multiple OPC structures, whereby the second region comprises multiple decoupling capacitors. The active devices in the first cells are separated by a first distance and the OPC structures are separated from the active devices by the first distance.