baber/WOPTO huggingface dataset:
Patent TW-432178-B (TW)
Title: Integrated gas control device
Inventor: FUKUSHIMA YOSHITOMO
IPC: F16L41/08
Filed: 1998-02-27
Granted: 2001-05-01
Abstract: The objects of present invention are that a gas control line is made compact to reduce the inner volume, gas control units are easily mounted or removed to enhance the maintainability, and a flow passage can be flexibly designed, a total lead time for manufacturing can be made shorter, and parts can be easily replaced for changing the flow passage by using the standardized constitution parts. In the integrated gas control unit, passage block 29 has an upward open circular mounting hole 30 on the top thereof and has a gas flowing-in passage 32 and a gas flowing-out passage 33 which open on the bottom surface of the mounting hole 30. The adjacent passage blocks 29 are connected to each other with a metal gasket 40 inserted therebetween such that a gas flowing-out passage 33 communicates with the gas flowing-in passage 32 and are mounted on a base plate 1 along many gas supply control lines 20 arranged in parallel. The body 48 of the desired gas control unit such as an automatic diaphragm valve 21 or the like which is constituted longitudinally is inserted into the mounting hole 30 of each passage block 29 with a gasket 59 inserted therebetween. The gas control unit is removably connected to the passage block 29 by screwing a connecting cylinder 62 fitted on the body 48 on the passage block 29.
Patent TW-390014-B (TW)
Title: Semiconductor device and method for manufacturing the same
Inventor: IWAYA AKIHIKO
IPC: H01L23/48
Filed: 1998-03-13
Granted: 2000-05-11
Abstract: A semiconductor device in which inner leads among a plurality of leads are arranged on a circuit formation face of a semiconductor chip encapsulated by a resin encapsulating body and bonding pads formed on the circuit formation face of the chip and the inner leads are electrically connected. An adhesive is selectively applied only to the inner leads on the outermost sides arranged on both ends of the chip among the plurality of inner leads. The circuit formation face of the chip and the inner leads of the selected leads are joined with the adhesive Each of the selected leads has a step on the main face of the semiconductor chip and the leads except for the selected leads have almost straight shapes without being processed to have steps.
Patent TW-408038-B (TW)
Title: Multi-sectional circulator
Inventor: SHEN JUNG-SHAN
IPC: B05B1/30
Filed: 1998-03-21
Granted: 2000-10-11
Abstract: This invention provides a multi-sectional circulator that consists of a guide-rail base and a sliding module. The guide-rail base has a bottom plate with it. A guide rail having side frames equipped around the three sides, on which main and the secondary sectional rails having one end connected with each other are equipped parallel mutually at an interval, is equipped on one side surface of the bottom plate. There are at least two locking section successively equipped between the main and secondary rails. The sliding module consists of one sliding body and one guide rod. A pushing member, having two corresponding ends extending out in the same direction and forming two guide portions parallel to the said first and second side frames, is equipped on the sliding body. The two guide portions and the pushing member enclose a containing space. The said guide-rail base can be moved in the containing space. The pushing member forms a assembly hole provided with a gap facing the said locking section. The guide rod is bent into hats shape which the drooping ends, are the jointing end and the sliding end respectively. The jointing end is set into the assembly hole with a torsion spring and the sliding end passes through the gap extending in the containing space. By permanently push the guide rod toward the secondary rail with the torsion spring, the sliding end is pressed and slides on the rail or is locked onto any locking section.
Patent TW-379325-B (TW)
Title: Semiconductor memory
Inventor: MATOBA KENJIRO
IPC: G11C11/41
Filed: 1998-03-31
Granted: 2000-01-11
Abstract: A kind of semiconductor memory, including a pair of address reading ends, providing the first and the second reading addresses and reads a datum stored at a memory cell of a selected memory to one of a pair of bit line; and a selector, for switching of selected corresponding bit line, no matter whether the reading is for the first reading address or the second reading address, and outputting the data read by the selected corresponding bit line to an output end. Therefore, the semiconductor memory is set at a signal frequency lower than that of a known semiconductor memory to provide to the pre-charge signal input, and improves the speed of the data reading.
Patent TW-410528-B (TW)
Title: Wrapped temperature sensing assembly
Inventor: BETHEL REGINALD K
IPC: G03G15/20
Filed: 1998-08-10
Granted: 2000-11-01
Abstract: The temperature of a heated roller (1) is monitored by a heat sensor (19) which rests on metal rectangle (25) on polyimide strip (5). The top end of the strip is attached directly to the frame (3), the bottom end of the strip has a hole (7), which receives an arm (9a) of pivoted member (9). A coil spring (13) pivots member 9 to cause arm 9a to pull the strip into contact with the heated roller. Because of the wide contact and low force between the strip and the roller, wear is reduced and smooth operation is realized.
Patent TW-440852-B (TW)
Title: Semiconductor memory device which can be set one from multiple threshold value
Inventor: FUJI YUKIO
IPC: G11C16/06
Filed: 1998-08-14
Granted: 2001-06-16
Abstract: The semiconductor device of the present invention comprises a memory cell in which one threshold value is set out of n kinds of threshold values. The device includes, a word line for selecting the memory cell, an X decoder for selecting the word line, a sense amplifier for amplifying an output of the memory cell, n-1 reference cells in which n-1 kinds of threshold values are set, n-1 reference amplifier for amplifying an output of each of the reference cells, and an n-1 differential amplifier for receiving the output of each of the reference amplifier and the output of the sense amplifier. Further, the device includes an encoder for encoding the output of the n-1 differential amplifier. Finally, the semiconductor device of the present invention comprises a level shift circuit for supplying all the reference amplifier with voltage which is half the voltage of the difference between adjacent threshold values lower than the voltage supplied to the word line.
Patent TW-593312-B (TW)
Title: 2,4,4-trisubstituted-1,3-dioxolane antifungals
Inventor: MEERPOEL LIEVEN
IPC: A61K31/44
Filed: 1998-07-06
Granted: 2004-06-21
Abstract: The present invention concerns novel compounds of formula, a N-oxide form, a pharmaceutically acceptable acid addition salt or a stereochemically isomeric form thereof, wherein n is zero, 1, 2 or 3; X is N or CH; each R1 independently is halo, nitro, cyano, amino, hydroxy, C1-4alkyl, C1-4alkyloxy or trifluoromethyl; R2 is hydrogen; C3-7alkenyl; C3-7alkynyl, aryl; C3-7cycloalkyl; optionally substituted C1-6alkyl R3 and R4 each independently are hydrogen, C1-6alkyl, C3-7cycloalkyl or aryl; or R3 and R4 taken together form a bivalent radical -R3-R4- of formula, wherein R5a, R5b, R5c, R5d each independently are hydrogen, C1-6alkyl or aryl; and aryl is optionally substituted phenyl; as antifungals; their preparation, compositions containing them and their use as a medicine.
Patent TW-376508-B (TW)
Title: Optical disk, reproduction apparatus, and reproduction method
Inventor: MORI YOSHIHIRO
IPC: H04N5/85
Filed: 1998-08-06
Granted: 1999-12-11
Abstract: An optical disk includes: a data region; and a management region. The data region stores: at least one video object containing video information and audio information; and at least one audio object containing audio information. The management region stores first path information and second path information, the first path information indicating a first reproduction path including only the at least one video object, and the second path information indicating a second reproduction path including a combination of the at least one video object and the at least one audio object.
Patent TW-396190-B (TW)
Title: High gloss high impact monovinylidene aromatic polymers
Inventor: DEMIRORS MEHMET
IPC: C08L53/00
Filed: 1998-08-12
Granted: 2000-07-01
Abstract: The present invention is a rubber modified monovinylidene aromatic polymer having a bimodal particle size distribution comprising: (a) rubber particles of a star or branched low viscosity rubber having a volume average particle size of from 0.1 to 2  mu m, and a cellular or core shell morphology or mixture thereof, and (b) rubber particles of a star or branched low viscosity rubber, linear diene rubber or block copolymer rubber having a volume average particle size of from 0.5 to 10 mu m, characterized in that the rubber particles of (b) are more dens than the rubber particles of (a), having a smaller occluded monovinylidene aromatic polymer content than the particles of (a), wherein the particle of (a) are form 50 to 99 weight percent of the total diene rubber content.
Patent TW-427016-B (TW)
Title: Manufacturing method of DRAM capacitors
Inventor: LIN DA-CHENG
IPC: H01L27/108
Filed: 1998-08-19
Granted: 2001-03-21
Abstract: A manufacturing method of DRAM capacitors is provided, wherein the structure of capacitor includes a storage node electrode which is characterized in having a hemispherical grain silicon layer on the surface of the storage node electrode to increase the surface area and the charge storage of the capacitor. The characteristics of the manufacturing method of the present invention includes: to avoid the generation of undesired native oxide layer, proceeding the steps of pre-cleaning to remove the native oxide layer, depositing the hemispherical grain silicon, annealing the hemispherical grain silicon layer, etc. in-situ under the condition of not exposing to the atmosphere by using UHV system to form the structure of storage node electrode; and then proceeding silicon nitride deposition and thermal oxidation steps on the surface of the storage node electrode structure to form the nitride-oxide stacked dielectric capacitor layer.
Patent TW-546412-B (TW)
Title: Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom
Inventor: BISHOP CRAIG V
IPC: H05K3/46
Filed: 1998-10-22
Granted: 2003-08-11
Abstract: This invention relates to a method of forming a substrate with preparing a surface capable of making a cocontinuous bond comprising the steps of (1) obtaining a copper or copper alloy substrate and (2) applying an etching composition which comprises (a) an acid, (b) an oxidizing agent, (c) a copper complexing agent, and (d) a copper complex, wherein the copper complex is present in an amount which precipitates when applied to the copper or copper alloy substrate. The method also includes the step of (3) treating the substrate with a coating composition and/or (4) applying a stripping composition to the substrate. The invention also relates to copper articles, having surface porosity, including multilayer articles such as printed circuit boards and compositions used in the method. The present invention provides microporous copper or copper alloy substrates which have improved adhesion properties to organic material.
Patent TW-522021-B (TW)
Title: Topical compositions for NSAI drug delivery
Inventor: BUYUKTIMKIN SERVET
IPC: A61K31/192
Filed: 1998-12-07
Granted: 2003-03-01
Abstract: An aqueous pharmaceutical composition of a semi-solid consistency is provided for topical application of non-steroidal anti-inflammatory (NSAI) drugs. The composition comprises one or more NSAI drugs, a non-basic polymeric skin penetration enhancer and a lipophilic solvent. The polymeric skin penetration enhancer is present in an amount sufficient to enhance skin penetration of the NSAI drug. The lipophilic solvent is a mixture of an aliphatic C2 to C8 alcohol and an aliphatic C8 to C30 ester.
Patent TW-376420-B (TW)
Title: Seal plate structure of beam and column
Inventor: Xu zhen-hui
IPC: E04B2/76
Filed: 1998-11-06
Granted: 1999-12-11
Abstract: A seal plate structure of a beam and a column, which comprises a guide rail fixed on the side end of the seal plate of a beam or a column, the guide rail being installed with a slide block therein such that the slide block can slide suitably in the guide rail. One end of the seal plate extends over and latches on the slide block so that the seal plate can completely cover the beam or the column in order to increase the overall beauty of the wall of a building. Furthermore, the walls of the building are prevented from cracking and being damaged from the deformation among the beam or the column of the building during an earthquake due to the slippage of the slide block in the guide rail.
Patent TW-417362-B (TW)
Title: Portable electronic mail apparatus and storage medium storing electronic mail program
Inventor: YAMAGUCHI YOSHITO
IPC: G06F13/00
Filed: 1998-12-24
Granted: 2001-01-01
Abstract: In a portable electronic mail apparatus which receives and transmits electronic mails, it is determined, if a mail is received, whether the RAM which is to store a received mail has an empty capacity to store the received mail, a volume of the received mail is equal to or smaller than a predetermined volume, a mail address of a transmitter is a predetermined address, or a predetermined word is included in the mail and according to a result of the determination, the received mail is stored in the RAM, or a part of the mail is stored in the RAM and the received mail is transmitted to a predetermined destination.
Patent TW-582041-B (TW)
Title: Memory-arrangement with redundant memory-cells and method to access on the redundant memory-cells
Inventor: MENKE MANFRED
IPC: G06F11/20
Filed: 1999-04-16
Granted: 2004-04-01
Abstract: This invention enables a flexible access on the redundant memory-cells in a memory that is divided into blocks. Through the usage of redundant-columns lines and redundant-rows lines of a specified block to remove the defects of another block, then in said another block more defects can be eliminated than the redundant-memory cells that exist in said another block. This invention can be applied to all memory-architectures, which parallel write or read a bit or many bits of information for each address.
Patent TW-429703-B (TW)
Title: Telecommunication device and method
Inventor: MATSUMOTO WATARU
IPC: H04M3/00
Filed: 1999-06-05
Granted: 2001-04-11
Abstract: A telecommunication device sets a data transmission time, which is suitable for the data transmission in a cycle, and which is used as the quasi-data transmission period other than the data transmission period in accordance with the transmission path. Multiple communications can be proceeded toward the first and second data. A cycle period of data can be transmitted in one cycle of the above data transmission period. Moreover, the data in the one cycle of the above data transmission period can be evenly assigned in terms of bits and transmitted.
Patent TW-469391-B (TW)
Title: Generating method of steel structure length and its device
Inventor: CHEN CHIOU-LIN
IPC: G06F19/00
Filed: 1999-06-05
Granted: 2001-12-21
Abstract: The present invention relates to a generating method of steel structure length and its device. Particularly, the program in read only memory can be executed by a microprocessor (personal computer) to perform calculation and comparison on data generated by the output equipment for thereby integrating an optimal combination to be stored in random access memory and outputted by a display.
Patent TW-I248435-B (TW)
Title: Benzimidazoles, the preparation thereof and their use as pharmaceutical compositions
Inventor: RIES UWE
IPC: A61K31/415
Filed: 1999-06-29
Granted: 2006-02-01
Abstract: The present invention relates to new benzimidazoles of general formula, wherein Ra to Rc, A, Ar and B are defined as in claim 1, the tautomers, the stereoisomers, the mixtures thereof the prodrugs, the derivatives thereof which contain, a group which is negatively charged under physiological conditions, instead of a carboxy group, and the salts thereof, particularly the physiologically acceptable salts thereof with inorganic or organic acids or bases, which have valuable properties. The compounds of the above general formula I wherein Rc denotes a cyano group are valuable intermediates for preparing the other compounds of general formula I, and the compounds of the above general formula I wherein Rc denotes one of the amidino groups mentioned in claim 1 which have valuable pharmacological properties, particularly an antithrombotic activity.
Patent TW-440629-B (TW)
Title: Lock stitch sewing machine with automatic thread tension adjusting device
Inventor: TAKENOYA HIDEAKI
IPC: D05B19/12
Filed: 1999-08-12
Granted: 2001-06-16
Abstract: Disclosed is a lock stitch sewing machine with automatic thread tension adjusting device. When a thread tension knob 2 equipped on the main body of a lock sewing machine is operated by a user, a motor 6 is driven by CPU 1 via a driver 5. The motor 6 rotates a thread tension cam of a thread tension mechanism 7 via motor gears to slide a thread tension plate to press a thread tension spring in the disc receiving direction to apply pressing force to increase the thread tension. A sensor to detect releasing operation of a releasing mechanism to manually release the thread tension disc. When the releasing operation is detected, the motor 6 is driven to make the thread tension lower than a prescribed value to enable manual releasing of the thread tension by a small power.
Patent TW-414749-B (TW)
Title: Hollow construction method for concrete material
Inventor: CHEN JR-SHENG
IPC: B28B23/00
Filed: 1999-09-17
Granted: 2000-12-11
Abstract: This invention provides a hollow construction method for concrete material. The foamed thermoplastic material is fastened and hung in the forms before concrete placing, and the concrete covers the foamed thermoplastic material. The concrete and foamed thermoplastic materials solidify preliminarily. Then the concrete will solidify rapidly and become an exception shape like the forms while increasing temperature, and the foamed thermoplastic material inside will shrink and become a small polymer.
Patent TW-I251595-B (TW)
Title: Benzothieno[3,2-C]pyridines as alpha2 antagonists
Inventor: KENNIS LUDO E J
IPC: A61K31/4355
Filed: 1999-10-01
Granted: 2006-03-21
Abstract: The present invention concerns the compounds of formula, the N-oxides, the pharmaceutically acceptable addition salts and the stereochemically isomeric forms thereof, wherein each R1 is independently hydrogen, halogen, C1-6alkyl, nitro, hydroxy or C1-4alkyloxy; Alk is C1-6alkanediyl; n is 1 or 2; p is 0, 1 or 2; D is an optionally substituted mono-, bi- or tricyclic nitrogen containing heterocycle having central alpha2-adrenoceptor antagonist activity. It further relates to their preparation, compositions comprising them and their use as a medicine.
Patent TW-449567-B (TW)
Title: Pour device for beer container
Inventor: SAITO EITOKU
IPC: B65D25/48
Filed: 2000-01-17
Granted: 2001-08-11
Abstract: A pour device for beer container is characterized in comprising: a cylindrical attaching part mounted on the mouth part of a beer can and a cylindrical pour part extended outwardly from the attaching part, in which the attaching part and the inside of the pour part form a pour body of an outflow passage in communication with the beer can; a mixing body installed in the outflow passage of the pour part; and a motor for driving the mixing body.
Patent TW-I240976-B (TW)
Title: Semiconductor device and method for manufacturing same
Inventor: IMAI KIYOTAKA
IPC: H01L29/78
Filed: 2000-02-09
Granted: 2005-10-01
Abstract: A semiconductor device including an NMOSFET which has an n-type source/drain main region containing arsenic and an n-type source/drain buffer region having arsenic and phosphorous of which a concentration is lower than that of the source/drain main region, and the concentration of the phosphorous in the source/drain buffer region is smaller than the concentration of the arsenic therein. The semiconductor device has a suppressed reverse short channel effect and reduced p-n junction leakage current. Further, the semiconductor device has a larger margin to a certain gate length and a specified threshold voltage to elevate a production yield.
Patent TW-494166-B (TW)
Title: Soundproof wall and silencer at the top of soundproof wall
Inventor: SEKIYA MASAMICHI
IPC: E01F8/00
Filed: 2000-02-14
Granted: 2002-07-11
Abstract: This invention aims to solve problems that conventional soundproof walls and silencers thereof normally bring, such as strong sunshine to neighborhood, view interruption to drivers. It includes to reduce noises by forming a light permeable film vibration sound absorbing body by laminating a board-shaped body having many openings and a thin resin film and attaching it to the sound source side of the soundproof wall.
Patent TW-503372-B (TW)
Title: Barcode reader with infrared light source
Inventor: SHIE JIUN-SHING
IPC: G06K7/10
Filed: 2000-02-15
Granted: 2002-09-21
Abstract: A barcode reader for reading barcode identification symbol is disclosed, which comprises a light source unit for emitting infrared light source to irradiate the barcode, wherein the barcode surface will reflect the infrared light source; a lens unit for receiving the infrared reflection from the barcode surface, and focusing and imaging the infrared reflection light onto the image sensing unit, then converting the image signal of the barcode into digital signal and transmitting to the control unit, so as to recognize the barcode identification symbol represented by the digital image signal.
Patent TW-I255956-B (TW)
Title: Liquid crystal display device
Inventor: YANAGAWA KAZUHIKO
IPC: G02F1/1335
Filed: 2000-04-14
Granted: 2006-06-01
Abstract: The objective of the present invention is to prevent reduction of aperture ratio regardless of misalignment of substrates. This device is provided with a black matrix BM, electrodes formed along the respective side lines oppositely facing of the opening of the black matrix BM. Each electrode is formed in such a pattern that the light- transmitting region in the opening of the black matrix BM is almost invariable regardless of the misalignment of the black matrix BM in the width direction of the electrodes.
Patent TW-454269-B (TW)
Title: A method for the preparation of an epitaxial silicon wafer with intrinsic gettering
Inventor: YANG CHARLES CHIUN-CHIEH
IPC: H01L21/324
Filed: 2000-06-13
Granted: 2001-09-11
Abstract: This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175 DEG C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10 DEG C/sec while (a) the temperature of the wafer is greater than about 1000 DEG C, and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.
Patent TW-460274-B (TW)
Title: Wrapping and cutting machine, and its method
Inventor: TASHIRO YASUNORI
IPC: A21C11/06
Filed: 2000-07-25
Granted: 2001-10-21
Abstract: This invention is about a wrapping and cutting machine to resolve the problem of conventional machine incapable of forming plural pleats on the skin of buns with stuffing. Turnable shutter pieces are installed on a concentric circumference to an opening for cutting. Forming boards are vertically installed on undersides of the shutter pieces and form a nearly radial shape when the opening for cutting has been shut.