baber/WOPTO huggingface dataset:
Patent TW-397934-B (TW)
Title: Colored image forming material and color filter obtained therefrom
Inventor: SATO TSUTOMU
IPC: G03F7/031
Filed: 1996-06-22
Granted: 2000-07-11
Abstract: In a colored image forming material comprising (a) a copolymer containing a carboxyl group, (b) a coloring agent, c a monomer containing at least one photopolymerizable unsaturated bond in the molecule, (d) a photoinitiator and, when required, (e) a specific sensitizer, the dispersion stability of pigment and the optical sensitivity can be considerably increased by using a specific copolymer of styrene derivative-maleic acid derivative as component (a) and specific benzoimidazole or benzothiazole as component (e), and a photosensitive element or a color filter with distinguished optical characteristics can be obtained therefrom.
Patent TW-303480-B (TW)
Title: Magnetically confined plasma reactor for processing a semiconductor wafer
Inventor: PETER K LOEWENHARDT
IPC: H01L21/3065
Filed: 1996-10-19
Granted: 1997-04-21
Abstract: The invention confines the plasma within the chamber without relying entirely on the chamber walls by introducing a magnetic field across an area or plane through which plasma flow is to be stopped. For example, in order to prevent plasma from leaking or flowing through openings necessarily provided the chamber walls, a magnetic field is established at the entrance of the reactor chamber to such an opening, by placing a pair of opposing magnetic poles across the opening, for example. The magnetic field is sufficiently strong to prevent plasma leaking through the opening.
Patent TW-414816-B (TW)
Title: Washing water supplying method of a washing machine
Inventor: KOO BON-KWON
IPC: D06F33/02
Filed: 1996-11-13
Granted: 2000-12-11
Abstract: A washing water supplying method of a washing machine for supplying water up to the decided water supply level and performing a next cycle if the determined water supply level is below the predetermined level, or measuring a displacement in accordance with water supply per unit and storing the measured displacement data in a microcomputer if the determined water supply level is above the predetermined level. The method enables an accurate detection of the water level in a washing machine without requiring an additional sensor.
Patent TW-326554-B (TW)
Title: Wet-etching device
Inventor: SE-JONG KO
IPC: H01L21/306
Filed: 1996-11-20
Granted: 1998-02-11
Abstract: A wet-etching device includes a. a power source b. a transmission to transfer the power from the power source c. a roller for reversing top and bottom positiond of a wafer in a processing bath using the power transmitted from the power source
Patent TW-351819-B (TW)
Title: Current leakage breaker device
Inventor: MIMATA YOSHIHISA
IPC: H01H33/00
Filed: 1997-01-30
Granted: 1999-02-01
Abstract: A leakage circuit breaker will be actuated to stop supplying power to the load at the instance when the leakage takes place, it mainly comprises a connection portion between the power supply and the load, a ring shaped leakage detector cross over the connection portion, a circuit breaker to cut off the power supply to the load basing on the detected result from the leakage detector and a case body to contain the leakage detector and the circuit breaker, the said leakage detector is disposed on the lower part of the case body, the said circuit breaker further consists of an exciting magnetic coil and an actuator which will is displaced when the exciting magnetic coil is working, the said connection portion has a pair movable connecting strips linked with a pair of fixed connecting strips, when any one of the movable connecting strip or the fixed connecting missing contact each other on the cross-over leakage detector, the movable connecting strip is displaced by the actuator so as to disengage the contact with the fixed connecting strip.
Patent TW-363227-B (TW)
Title: Indium doped base in bipolar transistors
Inventor: HAM THOMAS EDWARD
IPC: H01L29/167
Filed: 1997-02-18
Granted: 1999-07-01
Abstract: A kind of method for forming the bipolar transistors which includes the following steps: forms the first N-type doped region on the substrate so as to form the collector region; implants the indium ions in the N-type doped region so as to form the base; forms the discharger region which contacts with the base region.
Patent TW-455757-B (TW)
Title: Level-shifting interface circuit using intrinsic conductive pull-high device
Inventor: JOU HUANG-CHENG
IPC: G06F3/00
Filed: 1997-02-19
Granted: 2001-09-21
Abstract: The present invention provides a level-shifting interface circuit which is suitable for use in CMOS circuit connected to different operating voltages. In the shown embodiment, there is a first class circuit using VCC=3.3V, and such a circuit is connected to the input terminal IN of a second class circuit operating at VCC=5V. The node IN is connected to the input of the first inverter which is formed by an intrinsic PMOS transistor P* and an NMOS transistor N2. The first inverter is able to drive the second inverter so that the output of the second inverter becomes the output of the interface circuit. The intrinsic conductive PMOS transistor P* of the first inverter is formed by modifying the mask in a conventional dual well CMOS process so as not to perform channel ion implantation process. The intrinsic conductive PMOS transistor is not processed by threshold voltage adjustment, and thus its threshold voltage is larger than that of the conventional PMOS. Therefore, the interface circuit proposed by the present invention is provided with an advantage of having a very small or no steady-state DC current.
Patent TW-380321-B (TW)
Title: Thin-film type silicon single crystal solar battery, addendum 1
Inventor: YANG MEI-HUA
IPC: H01L31/042
Filed: 1997-05-21
Granted: 2000-01-21
Abstract: ake off the glass so that the weight of product can be reduced and prevents the breakage of silicon single crystal solar battery by the plasticity of plastic sheet or acrylic sheet.
Patent TW-387115-B (TW)
Title: Silicon wafer, and method of manufacturing the same
Inventor: KOARAI KATSUNORI
IPC: H01L21/322
Filed: 1997-03-24
Granted: 2000-04-11
Abstract: A silicon wafer has a polycrystalline sillicon film formed on one main surface. The polycrystalline silicon film has a multilayer structure composed of X layers (X is an integer equal to or greater than two ) containing <220> oriented components in different proportions. The proportion of the <220> oriented component in the first polycrystalline silicon layer in contact with the silicon wafer is larger than the respective proportions of the <220> oriented components in the second to X-th polycrystalline silicon layers superposed on the first polycrystalline silicon layer. It becomes possible to provide a silicon wafer whose polycrystalline silicon film possesses high gettering capability and in which stress acting on the silicon wafer is decreased.
Patent TW-319923-B (TW)
Title: Voice coil structure of electromagnetic vibrator
Inventor: LII HANN-PERNG
IPC: H02K1/00
Filed: 1997-04-01
Granted: 1997-11-11
Abstract: A voice coil structure of electromagnetic vibrator with a loop core at one side has the following characteristics. The loop core has plural cellular holes to reduce the eddy current for effectively reduce the reluctance due to vibration. In addition, the holes also can increase the winding area so that the more compact coil can be achieved.
Patent TW-460282-B (TW)
Title: Antifungal compositions with improved bioavailability
Inventor: BAERT LIEVEN ELVIRE COLETTE
IPC: A61K9/14
Filed: 1997-05-19
Granted: 2001-10-21
Abstract: The present invention is concerned with novel pharmaceutical compositions of itraconazole which can be administered to a mammal suffering from a fungal infection, whereby a single such dosage form can be administered once daily, and in addition at any time of the day independently of the food taken in by said mammal. These novel compositions comprise particles obtainable by melt-extruding a mixture comprising itraconazole and an appropriate water-soluble polymer and subsequently milling said melt-extruded mixture.
Patent TW-364098-B (TW)
Title: Tamper resistant methods and apparatus
Inventor: AUCSMITH DAVID
IPC: G06F21/00
Filed: 1997-06-13
Granted: 1999-07-11
Abstract: In accordance with a first aspect of the present invention, a security sensitive program that operates with a secret is made tamper resistant by distributing the secret in space as well as in time. In accordance with a second aspect of the present invention, a security sensitive program is made tamper resistant by obfuscating the program. In accordance with a third aspect of the present invention, a security sensitive application is made tamper resistant by isolating its security sensitive functions, and making the isolated security sensitive functions tamper resistant by distributing the secrets of the security sensitive functions in time as well as in space, and/or obfuscating the security sensitive fictions. In one embodiment where obfuscation is employed, the pseudo-randomly selected pattern(s) of mutations is (are) unique for each installation. In accordance with a fourth aspect of the present invention, a security sensitive system with security sensitive applications is made further tamper resistant by deploying an interlocking trust mechanism. In accordance with a fifth aspect of the present invention, a content industry association, in conjunction with content manufacturers, content reader manufacturers, and content player manufacturers of the industry jointly implement a coordinated encryption/decryption scheme, with the player apparatus manufactured by the content player manufacturers employing playing software that include tamper resistant decryption functions.
Patent TW-395071-B (TW)
Title: Oil cooled high power inductive coupler
Inventor: WOODY GEORGE R
IPC: B60L11/18
Filed: 1997-07-29
Granted: 2000-06-21
Abstract: An oil cooled inductive coupler for use with an inductive charging system that charges propulsion batteries of an electric vehicle. The coupler is connected to a power source by way of a coaxial cable that has power conductors for coupling power to the coupler, and cooling channels for coupling high dielectric strength cooling fluid to and from the coupler. The coupler has a housing with a flood box formed therein having an open interior that forms a conductor termination area. The cooling channels are coupled to the flood box, and the power conductors are terminated in the termination area and are exposed to the cooling fluid that is pumped therethrough to cool them. A heat exchanger having a fluid flow path therethrough is coupled to the flood box and permits the cooling fluid to circulated therethrough. A primary winding is secured or bonded to the heat exchanger, a magnetic puck is disposed in an opening in the heat exchanger, and upper and lower primary winding covers enclose the heat exchanger. The cooling fluid is pumped through the coaxial cable, the flood box and the heat exchanger to cool the primary winding, the magnetic puck, and the power conductors, to permit high power levels to be transferred between the power source and the propulsion batteries of the electric vehicle.
Patent TW-438678-B (TW)
Title: Fire-retardant filter medium and air filter unit using the same
Inventor: INOUE OSAMU
IPC: E04B9/02
Filed: 1997-08-04
Granted: 2001-06-07
Abstract: A filter medium with excellent flame-resistant properties and an air filter unit using the same are provided which have a flame-resistant air permeable supporting material on at least one surface of a polytetrafluoroethylene (PTFE) porous film and which can be used as a ceiling device, etc.
Patent TW-405152-B (TW)
Title: A flux supply method
Inventor: SHIMOKAWA KENJI
IPC: B23K1/20
Filed: 1997-08-30
Granted: 2000-09-11
Abstract: A flux supply method and apparatus are provided to properly supply flux 6 to an electrode portion 2 of an electronic device 1 including a semiconductor chip and a printed circuit board. The apparatus of the present invention is provided with a discharge nozzle 10 which discharges flux 6 in the form of drops, so that a desired amount of flux 6 in the form of drops injected from the discharge nozzle 10 can be applied to the electrode portion 2. In another apparatus of the present invention, the discharge nozzle 10 is comprised of a continuously oscillating means 23 for oscillating a part of the flux 6 filled therein and for discharging a continuous jet of the flux, a dividing means 21 for dividing the discharged continuous jet into homogeneous particle streams, and an electrification means 22 for electrifying the homogeneous particle streams to control the direction of the jet, whereby a desired amount of flux 6 can be applied to the electrode portion 2.
Patent TW-350157-B (TW)
Title: Interstitial sector system
Inventor: DENT PAUL W
IPC: H01Q1/24
Filed: 1997-10-02
Granted: 1999-01-11
Abstract: A sort of interstitial sector system for communications between a cellular phone and the base station; including the first base station, which address has the first 3-fan-type antenna for coverage of 3 120-degree fans; the second base station, located at the same address that of the first base station and having the second 3-fan antenna for coverage of 3 120-degree fans among 3 120-degree fans toward the first base station; device for emission and receiving along the fan-type antennas of the first and the second base stations; and applicable frequency device between the first and the second base stations in fan-type distribution for the emitters and receivers.
Patent TW-344660-B (TW)
Title: Artificial blood vessel and its manufacturing method
Inventor: SHIMIZU YASUHIKO
IPC: A61L27/24
Filed: 1997-12-05
Granted: 1998-11-11
Abstract: An artificial blood vessel characterized in that at least the external side of the hose formed of a supporting backbone material is formed with a layer of gelatin consisted of a superfine fiber.
Patent TW-364162-B (TW)
Title: Process for charge storage electrode structure
Inventor: LEE TUNG-HSING
IPC: H01L21/8242
Filed: 1997-12-05
Granted: 1999-07-11
Abstract: The present invention relates to a process for charge storage electrode structure, characterized by aggregating phosphorus ion at a concavity of HSG structure to render HSG structure more prone to oxidization, then further etching HSG in the presence of a specific mixture ratio of oxidant and etchant to increase the surface area of HSG, and thus finish the electrode of charge storage structure. Given that the process herein is highly compatible with the conventional process and allows for mass production, production cost can be reduced.
Patent TW-381273-B (TW)
Title: Coating liquid for forming bismuth-based ferroelectric thin film, and ferroelectric thin film, ferroelectric capacitor, ferroelectric memory formed with said coating liquid, and processes for production thereof
Inventor: OKADA YUKIHISA
IPC: C01B13/14
Filed: 1997-12-17
Granted: 2000-02-01
Abstract: The present invention relates to a coating solution containing Bi, metal element A ( wherein A is at least one selected from Bi, Pb, Ba, Sr, Ca, Na, K and rare-earth elements ) and metal element B ( wherein B is at least one selected from Ti, Nb, Ta, W, Mo, Fe, Co and Cr ); wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and, the organic metal compound, obtained from hydrolyzing composite alloy alkoxide containing at least two of these metal alkoxides; and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; and manufacturing method employing said coating liquid for forming ferroelectric thin film, ferroelectric capacitor and ferroelectric memory.
Patent TW-442842-B (TW)
Title: Effluent gas stream treatment system for oxidation treatment of semiconductor manufacturing effluent gases
Inventor: HOLST MARK R
IPC: H01L21/00
Filed: 1998-04-07
Granted: 2001-06-23
Abstract: An effluent gas stream treatment system (903) for treatment of gaseous effluents such as waste gases from semiconductor manufacturing operations (901). The effluent gas stream treatment system comprises a pre-oxidation treatment unit (905), which may for example comprise a scrubber, an oxidation unit (913) such an electrothermal oxidizer, and a post-oxidation treatment unit (917), such as a wet or dry scrubber. The effluent gas stream treatment system of the invention may utilize an integrated oxidizer (852), quench (862) and wet scrubber assembly (870), for abatement of hazardous or otherwise undesired components from the effluent gas stream. Gas or liquid shrouding of gas streams in the treatment system may be provided by high efficiency inlet structures (1060, 1110).
Patent TW-396460-B (TW)
Title: Metal oxide semiconductor transistor structure and its manufacturing method
Inventor: FU KUAN-YU
IPC: H01L29/423
Filed: 1998-01-09
Granted: 2000-07-01
Abstract: This is a kind of Metal Oxide Semiconductor transistor with Multiple T-shaped Gate. Its manufacturing method includes providing a substrate with a trench in the active region. A trench isolation structure is provided in the inactive region. A thin insulation layer and a metal layer are formed. The metal layer is defined to be gate. Lightly ion implanting is processed. Deeply ion implanting is processed by masks to a specific width of the trench surroundings of the active region. The structure formed has a substrate with a trench in the active region, a trench isolation structure is in the inactive region, a thin insulation layer formed on the surface of the trench of the active region and the substrate, multiple T-shaped gates with the first structure and the second structure at the trench of the active region and the substrate and a source drain region with light and deep doping regions. The multiple T-shaped gates increase the channel width between the source and the drain so that the Short Channel Effect of the chips with high density is decreased.
Patent TW-411634-B (TW)
Title: Organic electroluminescent display device and method of forming the same
Inventor: MIZUTANI KAZUHIRO
IPC: H05B33/22
Filed: 1998-02-21
Granted: 2000-11-11
Abstract: An organic electroluminescent display device comprising a transparent supporting substrate, a transparent anode of a plurality of stripes provided on the transparent supporting substrate, an organic electroluminescent layer extending over the transparent supporting substrate and the transparent anode, and a cathode of a plurality of stripes which extend in a direction perpendicular to a direction along which the stripes of the anode extend, wherein at least an insulative separation wall is provided between the stripes of the anode and the insulative separation wall has a height which is higher than a sum of a thickness of the anode and a thickness of the organic electroluminescent layer and further wherein the organic electroluminescent layer alos extends over the insulative separation wall.
Patent TW-437093-B (TW)
Title: Electrostatic discharge protection circuit using dynamic floating gate technique
Inventor: JANG HENG-SHIANG
IPC: H01L29/78
Filed: 1998-03-23
Granted: 2001-05-28
Abstract: The electrostatic discharge protection circuit is used to protect the electrostatic discharge current from the contact which comprises: the first transistor, connected between the contact and the first power source with the drain and the source; the second transistor, connected between the gate of the first transistor and the first power source with the drain and the source; and the delay circuit, connected with the first power source and the second power source to delay the opening of the second transistor during electrostatic discharging. The electrostatic discharge protection circuit can further comprise the diode to be connected with the drain and the source of the first transistor in parallel, and the contacts can be used as the output contact or input contact of the integrated circuit.
Patent TW-396622-B (TW)
Title: A scalable flash EEPROM memory cell and array
Inventor: JENQ CHING-SHI
IPC: H01L21/28
Filed: 1998-03-26
Granted: 2000-07-01
Abstract: A scalable flash EEPROM cell has a semiconductor substrate with a drain and a source and a channel therebetween. A select gate is positioned over a portion of the channel and is insulated therefrom. A floating gate has a first portion over the select gate and insulated therefrom, and a second portion over a second portion of the channel and over the source, and is between the select gate and the source. A control gate is over the floating gate and is insulated therefrom. A memory array using this memory cell is also disclosed.
Patent TW-368710-B (TW)
Title: Semiconductor device with bump electrode
Inventor: WAKABAYASHI TAKESHI
IPC: H01L21/60
Filed: 1994-11-04
Granted: 1999-09-01
Abstract: A semiconductor device with bump electrode, comprising: a connection electrode, provide on one surface of a semiconductor substrate; an inorganic film having an opening formed on one surface of said substrate, formed at least a part of said surface of said connection electrode being exposed through said opening; an organic film having an opening formed on one surface of said substrate, formed on said inorganic film, at least a part of a surface of said connection electrode being exposed through said opening, wherein said surface of said organic film and said exposed surface of said connection electrode at organ plasma, whereby an exposed surface layer of said connection electrode is etched, and a projection electrode is deposited coupling to said connection electrode, and a surface of said organic film exposed at said argon plasma that said surface layer thereof deteriorates is etched out.
Patent TW-372350-B (TW)
Title: Shallow trench isolation method for avoiding dishing
Inventor: LUO JI-JIN
IPC: H01L21/762
Filed: 1998-06-09
Granted: 1999-10-21
Abstract: A method of shallow trench isolation for avoiding dishing which is to form a thin silicon dioxide layer on the substrate as a pad oxide; form a Si3N4 or BN layer on the pad oxide; form an in situ doped polycrystalline silicon layer on the Si3N4 or BN layer; form a trench on the substrate; from a thin oxide pad along the sidewall of trench and on the surface of in situ doped polycrystalline silicon layer; form a CVD oxide on the oxide pad and fill back in the trench; employs two-stage CMP to remove each layer on the surface of Si3N4 or BN layer; the first stage is an oxide slurry CMP and stop at the surface of in situ doped polycrystalline silicon from 100 to 500 Angstrom; the second stage is the polycrystalline slurry CMP which is controlled and stopped at the surface of Si3N4 or BN layer.
Patent TW-585772-B (TW)
Title: Pharmaceutical composition for reducing oxalate levels in a patient
Inventor: HOLMES-FARLEY STEPHEN RANDALL
IPC: A61K38/51
Filed: 1998-11-03
Granted: 2004-05-01
Abstract: A method for reducing oxalate levels in a patient that includes administering to the patient a therapeutically effective amount of non-absorbable amine polymers such as a polymer characterized by a repeat unit having the formula, and salts and copolymers thereof, where n is a positive integer and x is zero or an integer between 1 and about 4.