baber/WOPTO huggingface dataset:
Patent TW-410348-B (TW)
Title: Presettable semiconductor memory device
Inventor: SHIU RUNG-FU
IPC: G11C7/00
Filed: 1998-10-26
Granted: 2000-11-01
Abstract: To configure a semiconductor memory device for presetting to a particular value without the need to write into each cell of a memory cell array, at least one controller is provided to address the array. The controller is responsive to preset, write and read control signals, and determines whether to keep an asserted state on a corresponding address select line of the array, or to force the corresponding address select line to a non-asserted state. Within the controller, at least one flag register is employed to indicate that a write operation has occurred for a corresponding word of the array. The flag register can be reset by means of the preset control signal. The controller will keep the asserted state on the corresponding address select line whenever the write control signal is asserted, and force the corresponding address select line to the non-asserted state when the read control signal is asserted and the corresponding address is not flagged. The controller further keeps the asserted state on the address select line when the flagged address is read. A setting cell is enabled by an enabling circuit when all the address select lines of the array are in the non-asserted state during a read cycle to output a fixed preset logic state.
Patent TW-408034-B (TW)
Title: Silver catalyst for production of ethylene oxide, method for production thereof, and method for production of ethylene oxide
Inventor: KIRIKI MASAHARU
IPC: B01J23/66
Filed: 1998-12-14
Granted: 2000-10-11
Abstract: A catalyst for the production of ethylene oxide by the vapor phase oxidation of ethylene under specific conditions such that an amount of chlorine suffered to adhere thereto is not more than 2 mol % per mol of silver after the duration of the reaction caused under the specific conditions has totaled 240 hours from the start of the reaction, a silver catalyst for the production of ethylene oxide which incorporates therein an organic nitrogen compound, methods for the production of the catalysts mentioned above, and a method for the production of ethylene oxide by the gaseous-phase oxidation of ethylene with a molecular oxygen-containing gas in the presence of such a catalyst.
Patent TW-408153-B (TW)
Title: Cellulose-containing composite, process for its preparation and use thereof
Inventor: YAGINUMA YOSHIHITO
IPC: A23L29/238
Filed: 1998-12-31
Granted: 2000-10-11
Abstract: A cellulose-containing composite comprising 20-99% by weight of a fine cellulose and 1-80% by weight of at least one low-viscosity water-soluble dietary fiber selected from the group consisting of (1) a hydrolyzed gallactomannan, (2) an indigestible dextrin and (3) a mixture of a polydextrose and xanthan gum and/or gellan gum, wherein the total amount of gellan gum and xanthan gum is 0.1% by weight or more but less than 3% by weight of the composite, in which composite the average particle size of the fine cellulose is 30 mu m or less when the composite is dispersed in water.
Patent TW-424407-B (TW)
Title: Method and device for electrically connecting circuits to opposite surfaces of a printed circuit board
Inventor: CAPORIZZO LOUIS
IPC: H05K3/40
Filed: 1999-01-27
Granted: 2001-03-01
Abstract: A device and method provide an easy and inexpensive electrical connection between circuits on both sides of a printed circuit board. A through-hole is formed in the board with conductive copper pads around the periphery of the hole on both sides of the circuit board. A malleable, conductive plug is inserted through the hole and then deformed. The plug has a length and diameter such that when deformed, it completely fills the hole and makes a solid electrical connection with the copper pads on both sides of the circuit board. Circuits on both sides of the circuit board may be electrically connected to each other through the copper pads and deformed plug.
Patent TW-440997-B (TW)
Title: Narrow spacing isolation process
Inventor: JANG WEN-YUE
IPC: H01L21/76
Filed: 1999-06-23
Granted: 2001-06-16
Abstract: A process for forming narrow trench isolations is disclosed. A dielectric layer, which cannot be oxidized, is patterned on a silicon substrate. Nitride spacers are then formed on the sidewalls of the dielectric regions. The nitride spacers are formed by depositing a nitride layer and etching with anisotropic nitride etching. A thin oxide layer is then grown on the exposed portions of the silicon substrate by thermal oxidation. Thereafter, the nitride spacers are removed by isotropic dry or wet nitride etching, which defines the isolation regions. The regions below the dielectric layer and the thermal oxide layer are diffusion regions, while the remaining dielectric regions and oxide regions from a mask. Anisotropic silicon etching is then applied to the silicon substrate forming trenches. The dielectric and oxide regions are then removed. Next, an oxide layer is grown on the silicon surface to remove damage caused by silicon trench etching and protect the underlayer silicon. The resultant trenches are filled with a thick CVD (chemical vapor deposition) oxide layer. Lastly, CMP (chemical mechanical polishing) is applied using the silicon substrate as a polish stop layer.
Patent TW-409313-B (TW)
Title: Equipment for fabricating semiconductor devices with nozzle and spin chuck
Inventor: SHIN JI-HYOUN
IPC: H01L21/31
Filed: 1999-05-14
Granted: 2000-10-21
Abstract: There is provided an equipment for fabricating semiconductor devices with a nozzle and a spin chuck for minimizing the generation of the pattern formation failures during the semiconductor devices fabrication process. The equipment comprises a spin chuck for securing a wafer transferred into a process chamber thereon and rotating the wafer; a solution supplying means including at least a nozzle for spraying s solution for fabrication semiconductor devices onto the wafer; a bowl provided inside the process chamber surrounding the wafer covering its peripheral portion for preventing the solution sprayed onto the wafer from being scattered to the inner wall of the process is chamber by the centrifugal force; and a covering means displaced with a certain height apart over the spin chuck having the wafer mounted thereon and having at least a hole through which the nozzle passes.
Patent TW-459069-B (TW)
Title: Etching chamber
Inventor: JANG SHAU-SHI
IPC: C23F4/00
Filed: 1999-07-23
Granted: 2001-10-11
Abstract: An etching chamber with an upper chamber and a lower chamber is provided. The lower chamber and the gas supply system are mounted with pipeline. During period of the delivery calibration, the lower chamber is covered with a mobile transparent plate and become a closed space then followed by venting and vacuuming for simulating the processing condition. A step of delivery calibration is performed thereafter and a fine delivery calibration position could be obtained.
Patent TW-417232-B (TW)
Title: Semiconductor device and process for producing the same
Inventor: KIMURA TAKEHIRO
IPC: H01L23/12
Filed: 1999-08-03
Granted: 2001-01-01
Abstract: A semiconductor device has a substrate for bumps having a first and a second surface opposite to each other. At least one groove or a plurality of holes are formed at the first surface of the substrate for bumps. A semiconductor chip is mounted on the second surface of the substrate for bumps. The semiconductor chip and the substrate for bumps are bonded by an adhesive. A plurality of bumps are formed on the first surface of the substrate for bumps.
Patent TW-428235-B (TW)
Title: Fabricating method of P-type metal oxide semiconductor transistor
Inventor: LIN JIAN-TING
IPC: H01L21/28
Filed: 1999-08-27
Granted: 2001-04-01
Abstract: This invention is about the fabricating method of P-type metal oxide semiconductor transistor and includes the followings: gate is formed on substrate and is followed by the formation of spacer on sidewall of gate; source/drain are formed in the substrate, which is on both sides of gate, and metal silicide layer is formed on both upper surface of gate and substrate surface; after that, spacer is removed and the extending doped-region of source/drain is formed on the substrate in between gate and source/drain. Then, the puncture-resist doped region is formed in the substrate on the inter periphery of source/drain.
Patent TW-436896-B (TW)
Title: Polycrystalline silicon thin film forming method and thin film forming apparatus
Inventor: EBE AKINORI
IPC: C23C16/505
Filed: 1999-10-21
Granted: 2001-05-28
Abstract: A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity is provided. In addition to form a thin polycrystalline silicon film at relatively low temperature and low cost with good productivity, it can also be used as a thin film forming device to form the desired film. A method of forming a thin polycrystalline silicon film by forming plasma from the mixed gas of silicon-atom containing gas material and Hydrogen gas or silane series reactive gas, in which a state of plasma is controlled to achieve an emission intensity ratio of hydrogen atom radicals (Hβ) to the emission intensity of SiH* radicals in the plasma of more than 1. Forming a thin polycrystalline silicon film on the substrate in the plasma is its feature, or it is a forming method of thin polycrystalline silicon film to form thin polycrystalline silicon film on the substrate under the above mentioned plasma whose potential is controlled under 60V. A thin film formation device, mainly comprising: a film-forming (1) chamber accommodating a film-forming substrate, a discharging electrode (3) for plasma formation connected to a discharging power source (4), a gas supply device (5) for supplying a film-forming gas, and an exhaust device (6) to exhaust the gas from the film-forming chamber, the film formation by plasma CVD has the feature of: an emission-spectrometer (7) for measurement to apply the plasma state and a probe measuring device (8), and the power supply from said discharge (4) at least controlling and maintaining the state of plasma in the specified state according to the detected data from the emission-spectrometer (7) and the probe measuring device (8); the gas supply form the gas supplying device (5); and the exhaust gas from said exhaust device (6); and the control portion (9) of one of the above.
Patent TW-425767-B (TW)
Title: Phase synchronizing circuit
Inventor: KIKUKAWA HIROHISA
IPC: H03L7/199
Filed: 1999-11-15
Granted: 2001-03-11
Abstract: The object of the present invention is to reduce the locking time of phase synchronizing circuit. Using the control circuit 8, the first output signal FR outputted from the first counter 2 by frequency division of the output from the reference signal source 1, and the phase delaying section of the second output signal FV outputted from the second counter by frequency division of the output from the voltage control oscillation circuit 3 so as to reset the second counter 4 for achieving the synchrony of counting start for the first and the second counters 2, 4; so that the detected phase difference for phase comparing circuit 5 can be consistent with the phase difference between the actual first and the second output signals FR, FV; therefore, the phase difference can be suitable feedback as the control voltage of voltage control oscillation circuit 3 so as to reduce the lockup time.
Patent TW-498113-B (TW)
Title: Process for producing an alkali metal from alkali metal amalgam by electrolysis, integrated process for producing chloride and alkali metal from alkali metal chloride, and electrolysis cell
Inventor: HUBER GUNTHER
IPC: C22B26/00
Filed: 1999-12-09
Granted: 2002-08-11
Abstract: In a process for producing an alkali metal from alkali metal amalgam by electrolysis using an alkali metal amalgam as anode, a solid electrolyte which conducts alkali metal ions and a liquid alkali metal as cathode, the alkali metal amalgam as anode is kept in motion. A process for producing an alkali metal from alkali metal amalgam by electrolysis using an anode containing alkali metal amalgam, a solid electrolyte conducting alkali metal ions and a liquid alkali metal as cathode, wherein the alkali metal amalgam as anode is kept in motion by stirring and/or by means of a pump under atmospheric pressure or slightly superatmospheric pressure, and the alkali metal is sodium and the process is carried out at from 310 to 400 DEG C or the alkali metal is potassium and the process is carried out at from 260 to 400 DEG C, and said process is carried out at current densities above 250 A/m<SP>2</SP>.
Patent TW-548258-B (TW)
Title: Aryl and heteroarylcyclopropyl oxime ethers and their use as fungicides and insecticides
Inventor: ROSS RONALD
IPC: A01N37/10
Filed: 2000-01-13
Granted: 2003-08-21
Abstract: Compounds with fungicidal and insecticidal properties having formula wherein X is N or CH; Z is O, S or NR8; A is hydrogen, halo, cyano, (C1-C12)alkyl, or (C1-C12)alkoxy; R1 and R8 are independently hydrogen or (C1-C4)alkyl; R2 is hydrogen, (C1-C12)alkyl, halo(C1-C12)alkyl, (C3-C7)cycloalkyl, halo(C3-C7)cycloalkyl, (C2-C8)alkenyl, halo(C2-C8)alkenyl, (C2-C8)alkynyl, halo(C2-C8)alkynyl, aryl, aralkyl, heterocyclic, heterocyclic(C1-C4)alkyl or C(R10)=N-OR9; R3 is hydrogen, (C1-C12)alkyl, halo(C1-C12)alkyl, (C3-C7)cycloalkyl, halo(C3-C7)cycloalkyl, (C2-C8)alkenyl, halo(C2-C8)alkenyl, (C2-C8)alkynyl, halo(C2-C8)alkynyl, aryl, aralkyl, aryl(C3-C7)cycloalkyl, heterocyclic or heterocyclic(C1-C4)alkyl; R4 and R5 are independently hydrogen, (C1-C12)alkyl, halo(C1-C12)alkyl, (C3-C7)cycloalkyl, halo(C3-C7)cycloalkyl, (C2-C8)alkenyl, halo(C2-C8)alkenyl, (C2-C8)alkynyl, halo(C2-C8)alkynyl, halo, cyano, (C1-C4)alkoxycarbonyl, aryl, aralkyl, aryl(C3-C7)cycloalkyl, heterocyclic or heterocyclic(C1-C4)alkyl; R6 is hydrogen, (C1-C12)alkyl, halo(C1-C12)alkyl, (C3-C7)cycloalkyl, halo(C3-C7)cycloalkyl, (C2-C8)alkenyl, halo(C2-C8)alkenyl, (C2-C8)alkynyl, halo(C2-C8)alkynyl, halo, cyano, (C1-C4)alkoxycarbonyl, aryl, aralkyl, aryl(C3-C7)cycloalkyl, heterocyclic or heterocyclic(C1-C4)alkyl; R7 is aryl, aralkyl, heterocyclic or heterocyclic(C1-C4)alkyl; R9 is hydrogen, (C1-C12,)alkyl, halo(C1-C12)alkyl, (C2-C8)alkenyl, halo(C2-C8)alkenyl, (C2-C8)alkynyl, halo(C2-C8)alkynyl, (C1-C4)alkylcarbonyl, (C1-C4)alkoxycarbonyl, aryl, or aralkyl; and R10 is hydrogen, (C1-C12)alkyl, halo(C1-C12)alkyl, (C3-C7)cycloalkyl, halo(C3-C7)cycloalkyl, (C2-C8)alkenyl, halo(C2-C8)alkenyl, (C2-C8)alkynyl, halo(C2-C8)alkynyl, aryl, aralkyl, heterocyclic, or heterocyclic(C1-C4)alkyl.
Patent TW-577881-B (TW)
Title: Flowable cyanuric chloride, process for the production thereof and use thereof
Inventor: LEUTNER JOSEF
IPC: C07D251/28
Filed: 2000-03-27
Granted: 2004-03-01
Abstract: This invention relates to flowable cyanuric chloride which contains a silica as flow auxiliary. While pyrogenic or hydrophobic silicas have hitherto been used, an alternative is provided according to the invention by the use of a precipitated silica or a silica gel having an average agglomerate diameter d50 of less than 15 mum. Preferred products exhibit an improved range of properties with regard to bulk density, reactivity and/or flowability.
Patent TW-513665-B (TW)
Title: Method and apparatus for jump delay slot control in a pipelined processor
Inventor: WARNES PETER
IPC: G06F9/38
Filed: 2000-07-05
Granted: 2002-12-11
Abstract: An improved method and apparatus for implementing instructions in a pipelined central processing unit (CPU) or user-customizable microprocessor. In a first aspect of the invention, an improved method of controlling branching and the execution of instructions within the pipeline is disclosed. In one embodiment, the method comprises defining three discrete delay slot modes within program jump instructions; these delay slot modes specify the execution of subsequent instructions or the stalling of the pipeline as desired by the programmer. In a second aspect of the invention, a method of synthesizing a processor design incorporating the aforementioned modes is disclosed. Exemplar gate logic synthesized using the aforementioned methods, and a computer system capable of implementing these methods, are also described.
Patent TW-436338-B (TW)
Title: Organic matter treating apparatus
Inventor: KOYAMA HIDEKI
IPC: B01D53/86
Filed: 2000-06-12
Granted: 2001-05-28
Abstract: To provide an organic matter treating device not emitting a malodor due to leakage of an undeodorized exhaust gas. This is an organic matter treating device provided with a treating tank 1 for decomposing the introduced organic matter such as garbage and an exhaust passage 15 to discharge an exhaust gas to the outside through a deodorizer 18 for deodorizing the exhaust gas from the tank 1. Vent holes 26 and 27 are formed on the downstream side of the deodorizer 18 in the exhaust gas passage 15, and a fan 24 for sucking the exhaust gas from the deodorizer 18 and the air from the vent holes 26 and 27 and discharging then to the outside is furnished on the downstream side of the vent holes 26 and 27.
Patent TW-561443-B (TW)
Title: Plasma display panel with constant color temperature or color deviation
Inventor: IRIE KATSUYA
IPC: G09G3/28
Filed: 2000-06-20
Granted: 2003-11-11
Abstract: The present invention is characterized in that the PDP drive means makes correction so as to decrease the emission intensity of green or to increase the emission intensity of blue as the display load factor increases compared with the case when the display load factor is lower. Or, the PDP drive means makes correction so as to increase the emission intensity of green or to decrease the emission intensity of blue as the display load factor decreases compared with the case when the display load factor is higher. Such a correction is effective when the monochromatic emission luminance of the fluorescent substance has such a saturation characteristic that the decrease in green is greater than blue as the emission frequency increases. Therefore, when the saturation characteristic is the opposite in terms of the relationship between green and blue, the increase/decrease of the emission intensity in the above correction must be the opposite.
Patent TW-482956-B (TW)
Title: Method for automatically detecting inputting characters and symbols of the keyboard
Inventor: DONG MIN
IPC: G06F11/26
Filed: 2000-07-14
Granted: 2002-04-11
Abstract: The method is for automatically detecting inputting characters and symbols of the keyboard that consists of the activating input procedure module, the simulating keyboard input module, the automatic determining result module and the closing input procedure module. It provides standardization of the operation procedures.
Patent TW-I221829-B (TW)
Title: Method for producing titanium oxide particles
Inventor: TANAKA ATSUSHI
IPC: C01G23/07
Filed: 2000-08-30
Granted: 2004-10-11
Abstract: A method for producing titanium oxide particles wherein titanium tetrachloride is oxidized at a high temperature with an oxidizing gas, characterized in that each of a titanium tetrachloride-containing gas and an oxidizing gas is preheated to a temperature of 500 DEG C or higher, and then fed to a reaction tube for reacting with each other, to thereby yield titanium oxide fine particles having a BET specific surface area of 3 m<2>/g to 200 m<2>/g. The finely particulate titanium oxide is a fine powder being reduced in the amount of coagulated particles and exhibits excellent dispersibility.
Patent TW-556053-B (TW)
Title: Photoresist stripping solution and a method of stripping photoresist using the same
Inventor: WAKIYA KAZUMASA
IPC: H01L21/02
Filed: 2000-09-08
Granted: 2003-10-01
Abstract: The photoresist removing solution of the present invention is obtained by blending (a) the salt of hydrofluoric acid and a metal ion-free base, (b) a water-soluble organic solvent, (c) a basic material and (d) water. Then, a substrate is subjected to etching and ashing in succession with a photoresist pattern formed on the substrate as a mask. The photoresist pattern is removed using the removing solution and then the substrate is rinsed with water. The photoresist removing solution according to the present invention provides excellent ability to remove residue such as a degenerated photoresist film produced after ashing and residue on etching (metal deposition), and excellent property of preventing the corrosion of a substrate in rising with water. The present invention also provides a method for removing a photoresist using the removing solution.
Patent TW-458834-B (TW)
Title: Laser drilling method and device thereof
Inventor: HAMADA SHIRO
IPC: B23K26/382
Filed: 2000-09-27
Granted: 2001-10-11
Abstract: A uniform optical system (13) and a cylindrical lens (15) which convert a laser beam from a laser oscillator (10) into a laser beam with a linear cross-sectional shape and a driving mechanism which transfers a mask (11) and a printed wiring board (12) so as to synchronize with each other are provided. The emission position of the linear cross-section laser beam is fixed. The driving mechanism transfers the mask and the printed wiring board so as to have the mask pass the emission position and the transfer direction is perpendicular to the extending direction of the linear cross-section laser beam to have the mask scanned by the linear cross-section laser beam. As a result, holes which are defined by the mask pattern of the mask are drilled in the printed wiring board.
Patent TW-565946-B (TW)
Title: Semiconductor integrated circuit device and its manufacturing method
Inventor: NISHIMOTO TOSHIAKI
IPC: H01L27/115
Filed: 2000-10-03
Granted: 2003-12-11
Abstract: A kind of semiconductor integrated circuit device is disclosed in the present invention. An AND type flash memory is formed on a substrate where a stripe-like device separation region 5 is formed while an active region L sandwiched between the device separation regions 5 is formed in stripe as well. A silicon single crystal substrate containing nitrogen or carbon elements is used as a semiconductor substrate such that the dislocation defect and joint leak can be reduced to increase the reliability and yield.
Patent TW-499460-B (TW)
Title: Resin composition with excellent dielectric property
Inventor: TSAI HSIEN-YIN
IPC: B32B15/14
Filed: 2000-10-06
Granted: 2002-08-21
Abstract: A resin composition with a low dielectric constant comprises: (a) a functionalized cyclic olefin copolymer; (b) a mixture of epoxy resins; and (c) a curing agent. A laminate and a resin coated clad made of the resin composition exhibit reduced dielectic constants of 3.3 and 2.9 at 1 GHz, respectively.
Patent TW-487998-B (TW)
Title: Formation method of electrical bump I/O pad
Inventor: WANG HSING-SENG
IPC: H01L21/60
Filed: 2000-11-10
Granted: 2002-05-21
Abstract: This invention provides a formation method of electrical bump I/O pads, which is applicable to wafer bumping, ball grid array (BGA) bumping or tape automated bonding (TAB) lead bumping. A substrate is secured onto a package base oppositely. A template secured on a frame is oppositely connected with the package base, in which the template has pre-formed holes for electrically connecting with corresponding I/O pads on wafer. Subsequently, solder paste is coated into the holes and a reflow process is carried out to complete the bumping process, or the bumping process can be achieved by means of wave soldering. The inventive method is suitable for bumping of high I/O number and exhibits high manufacture efficiency and low manufacture cost due to the reuse of the template.