Patent GB-1245116-A (GB)
Title: Insulated gate field effect transistors
Inventor: BROWN DALE MARIUS
IPC: H01L29/00
Filed: 1968-10-01
Abstract: 1,245,116. Igfet. GENERAL ELECTRIC CO. 1 Oct., 1968 [13 Oct., 1967], No. 46546/68. Heading H1K. An insulated-gate field-effect transistor is made by coating a major surface of a semiconductor wafer 10 firstly with a layer 11 of insulating material and secondly with a conducting metal layer 12, etching windows through the insulating and conducting layers using a photo-resist technique to expose areas of the semi-conductor corresponding to the desired positions of the source and drain regions, diffusing doping impurity through the windows to form the source and drain regions 18, 19 depositing metal contact layers over the source and drain regions and making electrode contacts to these layers and to the portion 15 of the conducting metal layer overlying the insulating material covering the channel between the source and drain electrodes. The portion 15 of the metal layer 12 (see also Fig. 5) constituting the gate electrode thus also serves as part of a diffusion mask defining the positions of the source and drain regions and problems of registration are consequently avoided. During diffusion the source and drain regions spread sideways slightly (by about 2 microns in the preferred embodiments) and thus extend slightly under the gate electrode by a controllable small amount. The semi-conductor material used may be silicon, germanium or gallium arsenide doped with boron (or phosphorus if N-type material is required). The insulating layer 11 may be of thermally-grown silicon dioxide, silicon nitride, alternate layers of these materials or silicon oxynitride. The metal layer 12 may be molybdenum or tungsten. The metal layer may be etched by a ferricyanide etch comprising potassium ferricyanide, potassium hydroxide and water and the insulating layer may be etched by buffered hydrofluoric acid (or in the case of silicon nitride with concentrated HF or phosphoric acid). The doping impurity for the source and drain regions may be phosphorus, antimony or arsenic (or in the case of an N-type material, boron). In a preferred embodiment a silicon wafer 10 of one inch diameter and thickness 0À014 inch and doped with approximately 10<SP>16</SP> atoms of boron per cm<SP>3</SP>. is coated with a 1000  silicon dioxide film 11 and a molybdenum film 12 between 700 and 10,000  thick (e.g. 4000 ), the latter being formed by sputtering in lowpressure argon for a period of 15 minutes. After etching windows 13, 14 through the layers 11, 12, phosphorus is diffused in to form the regions 18, 19 by exposing the wafer to an atmosphere of phosphorus pentoxide at an elevated temperature. A further masking with photo resist is then carried out to expose the central portions of the source and drain regions and a thin film of aluminium is evaporated in vacuum to cover the entire surface of the wafer. The mask is then removed and the wafer heated in forming gas to reduce electrode contact resistance. The wafer is cut into separate pieces each containing an individual IGFET device and electrical contacts are then made by gold wires to the drain electrodes and to the enlarged portions of the source and gate electrodes by forming thermo-compression bonds. Contact is made to the substrate by alloying to a gold-plated " Kovar" (Registered Trade Mark) header. The gate electrode 15 is 0À00025 inch wide and the separation between the source and drain junctions beneath the gate is about 2 microns. In a modification, Figs. 3 and 4 (not shown), the apertured layers on the wafer are coated with a phosphorus glass (either alone or on top of a pure SiO 2  layer) and the phosphorus diffused in by heating. Holes are then etched through the SiO 2 /glass layer and aluminium plated through these to form the electrodes.