baber/WOPTO huggingface dataset:
Patent TW-I224917-B (TW)
Title: Distributed cache synchronization protocol
Inventor: ZHANG GREG
IPC: H04W8/02
Filed: 2001-03-06
Granted: 2004-12-01
Abstract: A process is provided for managing a distributed cache that stores cache information at a plurality of participating nodes of a network, the distributed cache including a plurality of cache entries each having an associated portion of the cache information, each of the participating nodes including an associated local memory storage system for storing information including a local cache database for storing locally owned ones of the cache entries. The process includes the steps of: performing topology discovery, maintenance, and hierarchy building sub-processes to establish a nodal hierarchy in the network in order to facilitate exchange of the cache entries between the participating nodes, the hierarchy being formed by a plurality of peer groups each including at least one associated member one of the participating nodes; and performing distributed cache synchronization (DCS) functions including copying and transferring selected ones of the cache entries to other ones of the participating nodes via the hierarchy in accordance with a DCS protocol.
Patent TW-459391-B (TW)
Title: Charge pump device formed on silicon-on-insulator and operation method
Inventor: JI MING-HUA
IPC: H01L27/12
Filed: 2000-12-08
Granted: 2001-10-11
Abstract: A charge pump formed in a silicon-on-insulator (SOI) substrate is disclosed. The charge pump comprises a SOI layer formed on a substrate. Formed in the silicon of the SOI is a first p-body and a second p-body. Also formed in the silicon is a n+ region that extends down to the insulator so that the n+ region separates the first p-body and second p-body. Finally, a gate structure is formed atop of a portion of the first p-body and a portion of the n+ region. The gate structure is separated from the 1st p-body and n+ region by gate oxide, and it serves as charge pump capacitor. Both the diode turn-on (when gate is pulsing high and forward biasing the p-body to n+ junction), and GIDL current (when the gate is pulsing low, and generates GIDL hole currents from n+ surface to p-body) will result in a ""short"" of the p-body and n+ region; this ensures the proper operation of charge pump.
Patent TW-486839-B (TW)
Title: Primary radiator suitable for size reduction and preventing deterioration of cross polarization characteristic
Inventor: DOU YUANZHU
IPC: H01Q13/24
Filed: 2000-12-14
Granted: 2002-05-11
Abstract: There is provided a small and inexpensive primary radiator which is applied to a reflector having a noncircular reflecting surface shape, while securely preventing deterioration in cross-polarization characteristics. A dielectric feeder 11 comprises: a hold part 11a, which is inserted into a waveguide 10 and a trumpet-shaped radiation part 11b, which is different in radiation angle between the major-axis direction and short-axis direction and has plural annular grooves 15 formed in an end surface of its radiation part 11b to a depth about 1/4 times the wavelength λ of the radio wave. A couple of flat surfaces 14 are formed, by cutting the outer peripheral surface of the hold part 11a at opposite positions along an axis and arranged along the long axis of the radiation part 11b, so that the primary radiator functions as a phase compensation part which compensates the propagation phase difference that the radiation 11b has. Furthermore, a stepped hole 13 is formed by connecting two recessed grooves 13a and 13b inwardly from the end surface of the hold part 11a and the depth of both the recessed grooves 13a and 13b is set to almost 1/4 times the wavelength λε of a radio wave, so that the radiator functions as an impedance conversion part.
Patent TW-581710-B (TW)
Title: Production of a homogeneous mixture of a gaseous aromatic hydrocarbon and an oxygen-containing gas
Inventor: BLOCK ULRICH
IPC: B01F5/04
Filed: 2000-12-21
Granted: 2004-04-01
Abstract: A process and an apparatus for producing a homogeneous mixture of a gaseous aromatic hydrocarbon and an oxygen-containing gas for catalytic gas-phase reactions, in particular a homogeneous mixture of gaseous o-xylene and/or naphthalene and air for preparing phthalic anhydride, are provided. The liquid aromatic hydrocarbon is atomized to form droplets having a diameter of less than 1 mm and injected into an oxygen-containing gas stream (12) preheated to above the boiling point of the aromatic hydrocarbon. According to the invention, the liquid aromatic hydrocarbon is atomized by means of nozzles (15) which form a hollow cone (16), preferably by means of swirl nozzles. The o-xylene/air mixture is advantageously produced in a chamber which is bounded by side walls (18) heated to above the boiling point of the hydrocarbon.
Patent TW-595010-B (TW)
Title: Semiconductor device
Inventor: TAKEYA MOTONOBU
IPC: H01S5/323
Filed: 2001-01-03
Granted: 2004-06-21
Abstract: To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity. The semiconductor layer of the III-V group compound of the nitride system whose thickness is equal to or less than 8 mum, is provided onto a substrate made of sapphire. This reduces the bowing of the substrate due to differences in a thermal expansion coefficient and a lattice constant between the substrate and the semiconductor layer of the III-V group compound of the nitride system. An n-side contact layer forming the semiconductor layer of the III-V group of the nitride system has partially a lateral growth region made by growing in a lateral direction from a crystalline part of a seed crystal layer. In the lateral growth region, dislocation density restricts low, therefore, regions corresponding to the lateral growth region of each layer formed onto the n-side contact layer has excellent crystallinity.
Patent TW-I281582-B (TW)
Title: Silicon wafer liquid crystal display and its fabrication method
Inventor: CHUANG LI-SEN
IPC: G02F1/1343
Filed: 2001-01-20
Granted: 2007-05-21
Abstract: This invention provides a silicon wafer liquid crystal display and its fabrication method. In this invention, a special common electrode structure is introduced into a reflection light valve of a silicon wafer, and each common electrode structure includes a common electrode, called major common electrode, formed above the gap between two neighboring pixel electrodes and multiple electrodes, called major common electrode, located at equal intervals between the two major electrodes. The particular geometric structure of the common electrode structure forms the optimized fringe field for solving the problems of defective contrast and low light efficiency of the conventional silicon wafer display technology, thereby greatly improving the image quality. The same metal material can be used for the pixel electrodes and the common electrodes to solve the problem of a common electrode voltage shift. The manufacturing process of this silicon wafer liquid crystal display is simple, and the manufacturing cost is low.
Patent TW-501219-B (TW)
Title: Holder mechanism
Inventor: MARUYAMA NORIO
IPC: H01L21/687
Filed: 2001-04-26
Granted: 2002-09-01
Abstract: The holder mechanism of the present invention comprises a holder frame holding a held body, a fixed reference member installed on the holder frame and allowing the held body to press thereagainst, a movable reference member movable relative to the holder frame according to the size of the held body and allowing the held body to press thereagainst, a pressing member installed, by at least one, on the holder frame in lateral and vertical directions and pressing the held body against the fixed reference member or the movable reference member, and a drive part driving the movable reference member.
Patent TW-484216-B (TW)
Title: Singulation method of semiconductor package
Inventor: WU JI-CHIUAN
IPC: H01L23/28
Filed: 2001-05-09
Granted: 2002-04-21
Abstract: A singulation method of semiconductor package comprises the steps of providing a substrate and using a packaging party line with several palings to previously define several package units; disposing several temporal plating buses on the substrate along the extension direction of the packaging party line; after attaching die, soldering, encapsulation and solder ball implantation processes, disposing the substrate in a sickle machine to define several cutting line parallel to the extension direction of the plating bus so that the sickle head with double knife-edge can aim the lines for singulation. The two knifes of the sickle head are parallel to each other and the distance between them are larger than the predetermined width of the cutting line without touching the most outside solder ball. Therefore, the plating bus can be totally excised to avoid the package from the short circuit caused by remaining plating bus. Since the stress is reduced by using double knife-edge, the uniformity of the cutting edge after sigulation can be maintained.
Patent TW-536558-B (TW)
Title: Fabrication of low temperature superplastic AZ91 Mg alloys using simple high-extrusion ratio extrusion method
Inventor: LIN SHIUAN-KAI
IPC: C22C23/00
Filed: 2001-06-18
Granted: 2003-06-11
Abstract: The present patent is to choose the most popular and low-priced commercial AZ91D ingot, and to apply the most simple and feasible one- or two-step extrusion method, resulting in superior low temperature superplasticity. The one-step extrusion is undertaken using a high extrusion ratio above 100:1 (better above 150:1) at 250-350 DEG C. And the two-step extrusion is conducted with an extrusion ratio of 20:1 to 50:1 for the first step at 250-350 DEG C, followed by a second-step extrusion with an extrusion ratio of 3:1 to 8:1 at 200-300 DEG C (~50 DEG C below the first step). The grain size after high extrusion ratio extrusion is ~1 mum, resulting in high low temperature superplastic elongation of ~1200% at 300 DEG C and 1x10<-3> s<-1>.
Patent TW-476002-B (TW)
Title: Vertical parallax barrier bare eye three-dimensional display device
Inventor: WANG NAI-YUE
IPC: G02B30/30
Filed: 2001-05-31
Granted: 2002-02-11
Abstract: The present invention provides a vertical parallax barrier bare eye three-dimensional display device, which comprises: a light source formed of one or one more sets of horizontally arranged, parallel streak-like light source; an image-formation device in front of the light source to form the image at the position of both of user's eyes, and let user's left, right eye see the left, right eye image of the liquid crystal display respectively; a liquid crystal plate allocated on the other side of the image-formation device opposed to the light source; and a horizontal parallax barrier located between the image-formation device and the liquid crystal plate.
Patent TW-508725-B (TW)
Title: Manufacturing method of shallow trench isolation structure
Inventor: LIOU WAN-YI
IPC: H01L21/762
Filed: 2001-06-21
Granted: 2002-11-01
Abstract: There is provided a manufacturing method of shallow trench isolation structure. The method comprises: providing a substrate; first, sequentially forming a pad oxide layer and a mask layer on the substrate, and defining the substrate thereby forming a trench in the substrate; next, using a high density plasma chemical vapor deposition process with a high etching/depositing ratio to form an insulating layer on the substrate for covering the substrate and filling up the trench, in which the high etching/depositing ratio of the high density plasma chemical vapor deposition process is about 0.15 to 0.6; then, removing the insulating layer outside the trench, and sequentially removing the mask layer and pad oxide layer, thereby forming a shallow trench isolation structure.
Patent TW-501261-B (TW)
Title: Manufacturing method of interlayer solid conductive bar
Inventor: JENG JAU-CHIN
IPC: H01L23/522
Filed: 2001-07-04
Granted: 2002-09-01
Abstract: A kind of method for manufacturing interlayer solid conductive bar includes the following: providing a board formed by stacking an insulating core layer, the first conductor layer and the second conductor layer, in which the insulating layer is set in between both conductor layers; forming the first opening on the first conductor layer to expose the insulating core layer; using laser-drilling hole or the other method to remove the insulating core layer until reaching the second conductor layer so as to form the second opening and expose the second conductor layer; and performing an electroplating step by using the second conductor layer as the cathode so as to fill up the first opening and the second opening with the conductive material and form a solid conductive bar.
Patent TW-519508-B (TW)
Title: Self-aligning and floating apparatus for an automatic tester
Inventor: CHANG EDWARD C M
IPC: G01R31/28
Filed: 2001-07-18
Granted: 2003-02-01
Abstract: An apparatus includes coupling and supporting devices for floating and positioning a fixture to dock with another fixture. A coupling device is mounted on the fixture and coupled to an immediate plate using ball bearings to provide movements in X-Y directions as well as angular movements. The supporting device comprises a ball joint mounted between the immediate plate and a supporting plate to allow the fixture to be tilted. Sliding rods and a hinge are mounted on the supporting plate so that the fixture be flipped over 180 degree. Springs can be used instead if a ball joint. Sliding tracks and plates can also be used to provide movement in the X-Y directions. Guide devices each having a male guide member with a cone shaped head and a matched female guide member with a cone shaped void are used to guide the fixtures into positions for docking.
Patent TW-536914-B (TW)
Title: Method and device for showing contents of internet on television
Inventor: LIOU MENG-SHIAN
IPC: H04N7/14
Filed: 2001-08-09
Granted: 2003-06-11
Abstract: A system for showing contents of internet on television comprises network apparatus used to display the enhanced graphics lines and identification symbol of contents in internet on television screen. In general, contents of internet is difficult to be viewed on TV screen as a result of coarse resolution and need to be viewed in farther distance and with higher graphics resolution. The invention brings up a network device capable of providing enhanced graphics lines and identification symbol of contents in internet. The graphics lines divides the contents in internet into multiple areas and each area has an identification symbol. Then user can go through remote control to input an identification symbol so that the area represented by the identification symbol can be enlarged for being viewed easily. In another implementation example of the invention, the link displayed by an area can be selected in terms of the corresponding identification symbol inputted.
Patent TW-515106-B (TW)
Title: Bipolar transistor, semiconductor light emitting device and semiconductor device
Inventor: FUJIMOTO HIDETOSHI
IPC: H01L33/30
Filed: 2001-08-10
Granted: 2002-12-21
Abstract: In a GaAs type semiconductor device, an InpGa1-pAs (0 < p ≤ 1) is used to form heterojunction having a large difference in energy gap, thereby providing a high performance semiconductor device.
Patent TW-527660-B (TW)
Title: Slurry for chemical mechanical polishing and manufacturing method of semiconductor device
Inventor: MINAMIHABA GAKU
IPC: C09G1/02
Filed: 2001-08-21
Granted: 2003-04-11
Abstract: A kind of conductive material film for CMP (chemical mechanical polishing) is provided in the present invention, in which the slurry for CMP is capable of causing low etch and low scratch on the sample. The slurry for CMP is composed of the polishing particles containing the primary particles with a diameter of 5 to 30 nm and the colloid particles with a converging degree smaller than 5.
Patent TW-544842-B (TW)
Title: Method and apparatus for sealing the edges of a semiconductor die or VCSEL
Inventor: NOHAVA JAMES C
IPC: H01S5/183
Filed: 2001-08-31
Granted: 2003-08-01
Abstract: Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AIAs and AIGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.
Patent TW-557622-B (TW)
Title: Method and system of amplitude modulation using dual/split channel unequal amplification
Inventor: SCHELL STEPHAN V
IPC: H03K7/10
Filed: 2001-09-13
Granted: 2003-10-11
Abstract: A system and method of amplitude modulation is described in which first and second 180 degrees out-of-phase signals are produced and are each amplified by one of two (different amplification factor) non-linear amplifiers. One of the signals is amplified using constant amplification by a first non-linear amplifier to generate a relatively small amplified signal. The other of the signals is modulated using variable amplification by a second non-linear amplifier to generate a relatively larger amplitude modulated signal. The two resulting 180 degree out-of-phase signals are combined, such that the smaller signal effectively cancels out lower level distortion exhibited by the larger amplitude modulated signal. Alternatively, a symmetrical structure can be used for generating AM signals which include phase reversals of the carrier.
Patent TW-530171-B (TW)
Title: Optical waveguides and integrated optical subsystems on-a-chip
Inventor: HUNT ANDREW TYE
IPC: G02B6/12
Filed: 2001-10-03
Granted: 2003-05-01
Abstract: Optical waveguide composite materials and integrated optical subsystems with low loss connection to optical fibers, are disclosed. The waveguide material has a varying thickness and/or refractive index from one portion to another and can be varied in all three directions. Methods of producing the composite materials and waveguides are also disclosed.
Patent TW-I222746-B (TW)
Title: Transistor and display comprising it
Inventor: MORITA SATOSHI
IPC: H01L29/417
Filed: 2001-10-08
Granted: 2004-10-21
Abstract: A transistor has a source electrode and a drain electrode formed with a predetermined interval inbetween on a semiconductor layer formed to perspectively overlap a gate electrode. The source and drain electrodes are each longer in their lengthwise direction than in their widthwise direction. The source electrode has a recessed portion formed therein to accommodate the tip portion of the drain electrode. The semiconductor layer protrudes out of the gate electrode to form a portion that does not overlap the gate electrode but overlaps the source electrode and a portion that does not overlap the gate electrode but overlaps the drain electrode. Thus, the protruding portion that overlaps the source electrode and the protruding portion that overlaps the drain electrode are separated from each other by the gate electrode so as to be independent of each other. This prevents the short-circuiting between the source and drain when the portions of the semiconductor islands protruding out of the gate electrode become conductive through an electro-optic effect brought about by the light not blocked by the gate electrode or else.
Patent TW-583211-B (TW)
Title: Method of producing epoxy resin composition for photosemiconductor sealing
Inventor: SHIMADA KATSUMI
IPC: H01L23/29
Filed: 2001-10-15
Granted: 2004-04-11
Abstract: A first composition comprising the epoxy resin and the curing agent is kneaded in a first kneader 2 under heating, then a second composition comprising the cure accelerator is introduced into the first composition, and the compositions is kneaded in a second kneader 3 while cooling. As a result, the epoxy resin and the curing agent are effectively prevented from reacting with each other locally before being mixed thoroughly. Further the epoxy resin, the curing agent, and the cure accelerator can be kneaded continuously without local gel formation. Thus, an epoxy resin composition for photosemiconductor sealing which has no gel portion can be produced with good production efficiency.
Patent TW-561432-B (TW)
Title: Method for wirelessly transmitting facility information and control center using the method
Inventor: CHEN GUO-RUNG
IPC: H04W4/02
Filed: 2001-11-09
Granted: 2003-11-11
Abstract: The invention provides a control center that allows user to be able to acquire information using a wireless transmission device (e.g. PDA with communication function), allowing user to request a control center for transmitting the information of neighboring facilities where the wireless transmission device is located. The computer system of control center in the invention consists of a facility information database. The control center will utilize location information of base station or wireless transmission device as the targeting location information, and then follow the targeting location information to search required facility information from a facility information database.
Patent TW-507515-B (TW)
Title: An inner enclosure with micro shock absorber for a carrying case
Inventor: KWONG BILL
IPC: A45C3/00
Filed: 2001-11-29
Granted: 2002-10-21
Abstract: An improved soft inside enclosure for shock protection of a variety of external electronic and computer peripheral comprises a set of substantially evenly spaced small columns of micro shock absorber (MSA) protrusions that are integrated on the inside surfaces of the soft inside enclosure. Additionally, the base wall of the MSA structure can include a set of micro venting features for the improvement of heat dissipation from the enclosed devices to the ambient. A number of specific candidate materials are also presented for the construction of the soft inside enclosure with the MSA structure. A method for the systematic and experimental determination of a specific design of the MSA structure based on its durometer, thickness, diameter, column height, and pitch are disclosed.
Patent TW-I248539-B (TW)
Title: Liquid crystal display device
Inventor: KURAHASHI NAGATOSHI
IPC: G02F1/136
Filed: 2001-12-31
Granted: 2006-02-01
Abstract: A liquid crystal display device that is capable of restraining image retention includes, a counter electrode formed in a layer overlying the pixel electrode with a stacked insulating film interposed therebetween. The counter electrode is made of a plurality of stripe-shaped counter electrodes which are disposed so as to extend in one direction and to be juxta-posed in a direction transverse to the one direction, and the pixel electrode is made of a transparent plane-shaped electrode, which is formed in a large part of the pixel area.
Patent TW-561452-B (TW)
Title: Method and apparatus for speech recognition
Inventor: KONUMA TOMOHIRO
IPC: G10L15/193
Filed: 2001-12-31
Granted: 2003-11-11
Abstract: A method and apparatus for speech recognition of the present application has a process to collate, with an input utterance, an acoustic model corresponding to a hypothesis to be expressed by the connection of utterance segments, such as phonemes or syllables, and developed according to a length of an input utterance by an inter-word connection rule thereby obtaining a recognition score. Within a word of the hypothesis, the similar hypotheses high in utterance score within a predetermined threshold from the maximum value of the score are all held to a word end irrespectively of the number of hypotheses. Meanwhile, at a word end of the hypotheses, the hypotheses are narrowed to a predetermined number of upper ranking in the order of higher score.