baber/WOPTO huggingface dataset:
Patent TW-326571-B (TW)
Title: Improved memory device performance by delayed power-down
Inventor: TIM M COFFMAN
IPC: G11C11/409
Filed: 1997-03-26
Granted: 1998-02-11
Abstract: A method of reducing voltage drop due to chip disable time duration on integrated circuit power bus comprises: (1) Detecting external chip-disable pulses that occur before a minimum time duration; (2) Preventing said chip-disable pulses from powering down selected internal DC path power of integrated circuit; and (3) At the same time preserving output driver high impedance functionality of chip-disable signal.
Patent TW-350051-B (TW)
Title: IC card rear board support
Inventor: BETHURUM GARY CAIN
IPC: H05K5/02
Filed: 1997-05-30
Granted: 1999-01-11
Abstract: A sort of IC card, including a circuit board (12) having a front end and a rear end (20, 24, 24A, 24B, 24C, 220A, 220B, 220C) and one side extending to the contact pad (36) in its front, the front and rear board support (22, 26, 200) being connected respectively to the front and rear end of the circuit board, where the front end support having at least one array of electric contact points (34) being engaged with the contact pad, and a metal cover (30) having the upper and lower part (180, 182) respectively placed on top and beneath the circuit board, where the rear board support (26, 200) having a rear wall (50,294) facing each other laterally (100, 102), while the upper and lower flanges and a number of lateral spacing vertical extension ribs (61-66, 201-206) disposed in front of the rear wall and in association with the upper and lower flange, having said rear board support a hyothetic level center plane (79, 166, 212), and a first rib set having a first level extension groove (71.76, 210, 214, 216), for housing of the rear end of the board at a predetermined distance from the center face (0, H, J).
Patent TW-394911-B (TW)
Title: Methodology for testing a microcontroller chip adapted to control a liquid crystal display
Inventor: YACH RANDY
IPC: G02F1/133
Filed: 1997-06-27
Granted: 2000-06-21
Abstract: A method is disclosed for testing a high speed microcontroller fabricated on a semiconductor chip, and for testing relatively low speed functions of a liquid crystal display (LCD) module on the chip that drives an off-chip LCD for an external system to be controlled by the microcontroller with a plurality of discrete analog voltage levels for performing the LCD functions. Digital values are multiplexed in time slots of a test waveform to simulate in high speed digital format of a test mode the low speed timing, relative magnitude and functionality of analog voltage levels used to drive the LCD. A high speed driver is selectively coupled to a pin of the chip, to which the discrete analog voltage levels are normally applied at low speed to drive the LCD, and the test waveform is applied to the high speed driver. The digital values and timing that appear on the pin are then monitored as an indication of proper functionality of the LCD module. The high speed driver is switched out and the normal low speed LCD driver is switched back for return to an LCD user mode when the test mode is completed. Monitoring the pin with a digital tester allows verification that pin pulses in predetermined time slots indicate the corresponding analog voltage level is being applied at the proper time during normal operation of the LCD module, and digitally testing of continuity in an analog channel. A transistor normally employed on the chip for electrostatic discharge protection is activated to selectively couple the high speed driver to the pin for the high speed testing mode.
Patent TW-357365-B (TW)
Title: Precision sense amplifiers and memories, systems and methods using the same
Inventor: RAO G R MOHAN
IPC: G11C11/4091
Filed: 1997-12-03
Granted: 1999-05-01
Abstract: A sort of amplifier, including: a differential pair of transistors; and a third transistor, for the control of current through transistors of the differential pair in response to a stepped control signal.
Patent TW-434209-B (TW)
Title: Process for the production of higher oxo alcohols
Inventor: GUBISCH DIETMAR
IPC: C07C29/16
Filed: 1997-12-12
Granted: 2001-05-16
Abstract: The invention relates to a process for the production of alcohols having 7 to 18 C atoms by hydroformylation of the corresponding olefins with synthesis gas in the presence of an organic phase containing a cobalt catalyst at temperatures from 50 to 220 DEG C and pressures from 100 to 400 bar, and subsequent hydrogenation of the aldehydes thus obtained, the cobalt catalyst being formed by reacting an aqueous cobalt salt solution in the presence of an organic solvent, which is only slightly miscible with water or not at all, with synthesis gas, and the organic phase containing the cobalt catalyst is obtained by extraction of the cobalt catalyst formed from the aqueous phase by means of an organic extractant which is cnly slightly miscible with water or not at all. The formation of the cobalt catalyst, the extraction of the cobalt catalyst formed into the organic phase and the hydroformylation of the corresponding olefins are carried out in 1-stage process. The oxo alcohols produced by means of the process according to the invention are used for the production of carboxylic acid esters as plasticizers for plastics.
Patent TW-347569-B (TW)
Title: Process for producing lower electrode of a capacitance
Inventor: SHY JIUNN-JYI
IPC: H01L21/02
Filed: 1997-12-12
Granted: 1998-12-11
Abstract: A process for producing a lower electrode of a capacitance, which comprises the following steps: providing a semiconductor substrate; forming a first dielectric layer covering the semiconductor substrate; forming a silicon nitride layer covering the first dielectric layer; defining the silicon nitride layer and the first dielectric layer thereby forming a contact hole exposing a specific area of the semiconductor substrate; forming a conductor layer covering the silicon nitride layer and filling the contact hole, and contacting the specific area of the semiconductor substrate; forming a first semispherical silicon crystal layer covering the conductor layer; forming a second dielectric layer covering the first semispherical silicon crystal layer; defining the second dielectric layer, the first semispherical silicon crystal layer and the conductor layer, until approximately exposing the silicon nitride layer; forming a second semispherical silicon crystal layer covering the surface exposed by the conductor layer, the second dielectric layer and the silicon nitride layer; removing the second semispherical silicon crystal layer on the surface of the conductor layer, the second dielectric layer and the silicon nitride layer, until approximately exposing the silicon nitride layer and the second dielectric layer; and removing the second dielectric layer until approximately exposing the first semispherical silicon crystal layer.
Patent TW-396080-B (TW)
Title: Laser beam machining apparatus using a plurality of galvanoscanners
Inventor: ISO KEIJI
IPC: B23K26/064
Filed: 1998-02-10
Granted: 2000-07-01
Abstract: In an optical path of a laser beam, a reflection mirror (11) is located to divide the laser beam into two split laser beams. By the use of the split laser beams, workpieces (17a, 17b) are simultaneously processed.
Patent TW-368539-B (TW)
Title: Construction method for inwall
Inventor: Huang guo-zhen
IPC: E04G21/02
Filed: 1998-03-10
Granted: 1999-09-01
Abstract: A kind of construction method for inwall which includes the following steps: (a) moldboard assembly: to assembly pairs of moldboards standing in opposite and leave the grouting inlet on the top; (b) vesicant cement preparation: to prepare the vesicant cement by mixing four material such as cement, sand, water and vesicant; (c) grouting: to pour suitable amount of vesicant cement from the grouting inlet into the assembled moldboards; (d) mold sealing: to seal the grouting inlet to form a closed space; (e) solidification: to make the vesicant cement solidified in the closed space; (f) mold disassembling: after complete solidification of the vesicant cement, the moldboard then will be disassembled and complete the inwall construction.
Patent TW-367591-B (TW)
Title: Nanoporous dielectric films with graded density and process for making such films
Inventor: WALLACE STEPHEN
IPC: H01L23/532
Filed: 1998-04-10
Granted: 1999-08-21
Abstract: The present invention relates a nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition positioned between the raised lines and a relatively low porosity, high dielectric constant, silicon containing composition positioned on the lines.
Patent TW-452935-B (TW)
Title: Method for eliminating junction edge defects
Inventor: SHIU JEN-TSUNG
IPC: H01L21/768
Filed: 1998-07-21
Granted: 2001-09-01
Abstract: The present invention discloses a method for eliminating junction edge defects which can solve the conventional junction leakage effect caused by contact misalignment and overetching during contact etching. The method of the present invention is characterized that after etching and defining a contact to be exposed in a source/drain area in a semiconductor device, conducting a slanted ion implantation.
Patent TW-370639-B (TW)
Title: Device and method of a write-protected basic input output system memory
Inventor: LAI ROGER
IPC: G06F13/00
Filed: 1998-08-31
Granted: 1999-09-21
Abstract: A device and method of a write-protected basic input output system memory, which is applied to a personal computer having a central processing unit, comprises: a memory; a write-in device; and a write-in discriminating device. A program sets the value of a specific register in the central processing unit to a specific value. And the write-in discriminating device can execute a write-in act to the memory stored with basic input output system program in response to the specific value of the specific register in a central processing unit.
Patent TW-527762-B (TW)
Title: Switched reluctance drive with high power factor
Inventor: WEBSTER PAUL DONALD
IPC: H02M7/06
Filed: 1998-10-14
Granted: 2003-04-11
Abstract: A polyphase switched reluctance drive supplied from a passive power factor correction circuit. The phases of the machine are switched so that there is always one phase drawing current from the DC link and the current drawn from the DC link is substantially always positive.
Patent TW-453919-B (TW)
Title: Riser sleeve with neck-down core
Inventor: YOO YONGSUN
IPC: B22D29/00
Filed: 1998-10-27
Granted: 2001-09-11
Abstract: A riser sleeve includes a sleeve section defining a casting space, and a neck-down core section integrally formed extending from a lower end of the sleeve section. The neck-down core section is provided with an opening, on an inner circumference of which a projection is notched. The neck-down core section is made of at least one material selected from the group consisting of ceramic fiber, silica, alumina, chromite, and zircon.
Patent TW-392107-B (TW)
Title: Self-resetting dynamic logic circuits and method for resetting the circuits
Inventor: CHUNG MIN-CHUL
IPC: H03K19/096
Filed: 1998-10-30
Granted: 2000-06-01
Abstract: An S-R flip flop device and a delay circuit are provided for a self-timed reset circuit to reset a dynamic logic circuit. The leading edge transition of an output signal is transferred to the set input of flip flop device via the delay circuit to ensure a desired output signal pulse width. However, the trailing edge transition of the output signal is directly fed back to the reset input of the flip flop device without delay in order to prepare for next operation cycle quickly.
Patent TW-438951-B (TW)
Title: Waste treatment method
Inventor: HU LUNG-HAI
IPC: F23G5/00
Filed: 1998-12-21
Granted: 2001-06-07
Abstract: The present invention relates to a kind of waste treatment method, mainly comprising the devices of the electronic mobile thermal decomposition furnace, the compression treatment vehicle, and numerous repeatedly used fully sealed blast-proof storage boxes. The recycling storage boxes can be fully loaded with waste and compressed and sealed by treatment vehicle, then, extracted to vacuum through the safety valve of the box cover, to prevent waste in the box from oxidizing and decay, so as to preserve for a longer period. The mobile thermal decomposition furnace can be towed to the location of storage boxes for proceeding high frequency thermal decomposition treatment. In the meantime, recycling, waste gas and waste water filtering treatment are efficiently applied utile the thermal decomposition process is completed, then, the residuals in the boxes are cleaned away. The boxes can be repeatedly used and are conformed to requirement of environmental protection.
Patent TW-557303-B (TW)
Title: Novel polymers
Inventor: CHAI CHOON KOOI
IPC: C08J5/18
Filed: 1999-01-06
Granted: 2003-10-11
Abstract: Novel polymers having a broad molecular distribution, excellent toughness and improved processability are disclosed. The novel polymers may be prepared by use of a single metallocene catalyst system in a single reactor preferably operating continuously under a single set of reaction conditions. The novel polymers of density typically 0.85-0.95 are defined in particular by their melt strength and long chain branching characteristics and are particularly suitable for use in low density film applications.
Patent TW-440787-B (TW)
Title: Method for transmitting and receiving image signal and apparatus therefor
Inventor: SHIN HYUN-KUK
IPC: G06F3/147
Filed: 1999-03-06
Granted: 2001-06-16
Abstract: A method for transmitting and receiving an image signal according to the present invention includes a step of converting an analog image signal from a computer into a digital image signal. The converted digital image signal is converted into an optical signal. The converted optical signal is transmitted to the positions of a flat-panel display apparatus and a cathode ray tube monitor through an optical cable. The transmitted optical signal is converted into a digital image signal. The converted digital image signal is input to the flat-panel display apparatus and is also converted into an analog image signal and input to the cathode ray tube monitor.
Patent TW-385233-B (TW)
Title: Cutting method for horizontal bar-shaped food and the apparatus thereof
Inventor: KOBAYASHI MASAO
IPC: A23G3/02
Filed: 1999-03-16
Granted: 2000-03-21
Abstract: A kind of cutting method for horizontal bar-shaped food and the apparatus thereof for cutting process of bar-shaped food horizontally transmitted on the conveyer which can keep horizontal status during cutting and the cutting apparatus using the same. The bar-shaped food is carried on the input conveyer and transmitted to the shutter means and the bar-shaped food is supported by the input conveyer and output conveyer and cut by the shutter means.
Patent TW-429714-B (TW)
Title: Device for lowering capacity demand of network switch controller
Inventor: JANG JUNG-RU
IPC: H04L29/00
Filed: 1999-06-15
Granted: 2001-04-11
Abstract: A method and device applied to network (in particular Ethernet Network) switch controller uses temporary buffer along with polling mechanism to significantly lower the capacity demand of the output port buffer. The characteristics of the invention are the adequately designed length of output port buffer and the capacity and count of temporary buffers so that the sum of capacity demand of all buffers used can be significantly decreased, and the problems caused by overflow can yet be avoided. The invention can be applied to network switch controllers with any number of output/input ports.
Patent TW-499476-B (TW)
Title: Method for producing essence plate
Inventor: CHEN KAI-HUNG
IPC: C11B9/00
Filed: 1999-07-05
Granted: 2002-08-21
Abstract: The present invention relates to a method for producing an essence plate, which comprises mixing 70% of SiO2 powder and 30% of CaO powder thoroughly; forming the mixture by a high pressure molding into a solid essence plate; immersing the essence plate in an essence oil for about two days; since the essence oil is added in advance with a viscous grease, the viscosity and the adhesion of the essence oil are significantly increased; therefore, the essence plate can absorb a larger amount of essence oil; furthermore, the ratio of the essence plate to the essence oil is 1:2, thereby providing an essence plate that has a large absorption of the essence oil and a long using time.
Patent TW-585929-B (TW)
Title: Collimated sputtering of semiconductor and other films
Inventor: DEMARAY RICHARD ERNEST
IPC: H01L21/336
Filed: 1999-07-08
Granted: 2004-05-01
Abstract: Thin semiconductor films or layers having a pre-selected degree of crystallinity, from amorphous material to poly-crystalline material, can be obtained by selecting an appropriate aspect ratio for a collimator used during a sputtering process. The orientation of the deposited film also can be tailored by selection of the collimator aspect ratio. Sputtered collimation permits highly crystalline films to be formed at temperatures significantly below the annealing temperature of the sputtered material. Thus, subsequent annealing or remelting steps can be eliminated to reduce the number of required fabrication steps and increase the throughput of the system. Moreover, the use of low temperatures allows films of substantially greater crystallinity and carrier mobility to be fabricated on glass and other low temperature substrates. Additionally, thin semiconductor and dielectric films can be formed at low temperatures with reduced number of voids and vacancies. Trapped charge defects also can be reduced by grounding the collimator to provide electrical isolation between the charged plasma particles and the substrate on which the sputtered layer is to be formed. Dielectric films having a thickness as small as several hundred A can be formed to fabricate high transconductance devices with high breakdown strengths. Devices can be fabricated with improved electrically active interfaces, such as a rectifying junction between a semiconductor layer and a dielectric layer or an ohmic junction between intrinsic and doped semiconductor materials.
Patent TW-I232852-B (TW)
Title: Composite solder glass with reduced melting temperature, filling material for same and methods of using same
Inventor: SIEBERS FRIEDRICH
IPC: C04B35/493
Filed: 1999-07-21
Granted: 2005-05-21
Abstract: An improved filling material for a composite solder glass based on doped PbTiO3 with a lower melting temperature is disclosed, in which up to 35 atom % of the Pb atoms and up to 35% Ti atoms are replaced by Mg and/or Ca and a portion of O atoms in the doped PbTiO3 is replaced with halogen atoms, preferably fluorine. This filling material and composite solder glasses containing it are useful for hermetic sealing, soldering and/or coating of individual components made of glass material, glass-ceramic material, ceramic material and metal in the manufacturing of components and devices for electrical engineering and electronics, for hermetic encapsulation of electronic components, vacuum-tight seals or closures of display tubes or for display devices. They are also useful for coating and bonding of special glasses. The filling material can be made by reaction sintering of a powder mixture at temperatures of 800 DEG C to 1250 DEG C.
Patent TW-450891-B (TW)
Title: An embossed multiply cellulosic fibrous structure and process for producing the same
Inventor: MCNEIL KEVIN BENSON
IPC: B31F5/00
Filed: 1999-07-31
Granted: 2001-08-21
Abstract: An embossed multiple ply paper product having a nested latticework embossment pattern providing a cloth-like, quilted appearance and a process for embossing and bonding such multiple ply paper product. The multiple ply paper product comprises a latticework of cells composed of n rows of embossment elements nested within an interfacing latticework of cells composed of n+1 rows of embossment elements.
Patent TW-493199-B (TW)
Title: Time of flight energy measurement apparatus for an ion beam implanter
Inventor: MCINTYRE EDWARD KIRBY JR
IPC: H01J49/40
Filed: 1999-09-03
Granted: 2002-07-01
Abstract: In accordance with the present invention, an ion implanter (10) including a time of flight energy measurement apparatus (200) for measuring and controlling the energy of an ion beam (14). The ion implanter (10) includes an ion source (12) for generating the ion beam (14), an ion acceleration assembly (18) for accelerating the beam (14) resulting in the beam (14) comprising a series of ion pulses (P0, P1, ..., P(n+1)) having a predetermined frequency (F) and beam forming and directing structure (50) for directing the ion beam (14) at workpieces (21) supported in an implantation chamber (22) of the implanter (10). The time of flight energy measurement apparatus (200) includes spaced apart first and second sensors (210, 310, 220, 320), timing circuitry (204) and conversion circuitry (206). The time of flight energy measurement apparatus (200) measures an average kinetic energy of an ion (E(ion)) included in a selected ion pulse of the ion beam. The first sensor (210, 310) and a second sensor (220, 320) are disposed adjacent the ion beam (14) and spaced a predetermined distance apart, the second sensor (220, 320) being downstream of the first sensor (210, 310). The first sensor (210, 310) generates a signal when an ion pulse of the ion beam (14) passes the first sensor (210, 310) and the second sensor (220, 320) generates a signal when an ion pulse of the ion beam (14) passes the second sensor (220, 320). The timing circuitry (204) of the energy measurement apparatus (200) is electrically coupled to the first and second sensors (210, 310, 220, 320) and determines an elapsed time, t, for the selected ion pulse to traverse the predetermined distance between the first and second sensors (210, 310, 220, 320). The timing circuitry (204) calculates an average number of ion pulses, N, in the ion beam (14) between the first and second sensors (210, 310, 220, 320) based on the approximation of the ion beam energy (E(approx.)) and calculates an offset time, t(offset), for the selected ion pulse using the formula, t(offset) = N x T. The timing circuitry (204) than determines the elapsed time, t. The conversion circuitry (206) converts the elapsed time, t, for the selected ion pulse into a measure of the energy of the ion beam (E(ion)).
Patent TW-469150-B (TW)
Title: Apparatus and method for separating components of a feed material
Inventor: CLARKE NEVILLE
IPC: B04C9/00
Filed: 1999-12-18
Granted: 2001-12-21
Abstract: A method and apparatus for separating the components of a feed material prior to or simultaneously with at least partially vaporising one of the components is described. The apparatus comprises at least one inlet (8) for admitting the feed material (10) containing the two components to the apparatus (2) wherein a device for introducing a first movement to the feed material is located, such as, for example, an in-line swirl generator (14), which imparts a swirling movement to the feed material to partially separate the components into two swirling flows. The partially separated material on emerging from the in-line swirl generator (14) is in an evaporation tube (20) in which the more volatile component is vaporised to further assist in separating the two components into a liquid component and a gaseous or vapour component. The liquid component and the vapour phase are discharged from the apparatus in two streams through the same outlet 36. Modifications of the method and apparatus include (i) having multiple evaporation tubes (20), each optionally provided with its own in-line swirl generator to facilitate better distribution and separation of the feed material, and (ii) having a reject nozzle (40) and reject conduit (42) located within the generator for allowing passage of vapour or gas through the in-line swirl generator (14) when there is an intermediate flow formed in the generator (14) and conveyed to the evaporation tube (20). The method and apparatus of this application are used as a pre-treatment in an overall separation plant.