Patent SG-11201811269R-A (SG)
Title: Method of processing wafer having protrusions on the back side
Inventor: PRIEWASSER KARL HEINZ
IPC: H01L21/78
Filed: 2017-06-27
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 04 January 2018 (04.01.2018) WIP0 I PCT Hu °million OH oI0IIIIIIII110101001110l IIII111110I110IIIIII (10) International Publication Number WO 2018/002035 A2 (51) International Patent Classification: HO1L 21/78 (2006.01) HO1L 21/683 (2006.01) (21) International Application Number: PCT/EP2017/065825 (22) International Filing Date: 27 June 2017 (27.06.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 1611198.1 28 June 2016 (28.06.2016) GB (72) Inventor; and (71) Applicant: PRIEWASSER, Karl Heinz [AT/DE]; Kili- hofstrasse 30a, 81825 Miinchen (DE). (74) Agent: HOFFMANN EITLE PATENT- UND RECHTSANWALTE PARTMBB, Association 151 et al.; ArabellastraBe 30, 81925 Munich (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — without international search report and to be republished upon receipt of that report (Rule 48.2(g)) (54) Title: METHOD OF PROCESSING WAFER 2 14 6 r ) 25 13 2 18 Fig 4 (57) : The invention relates to a method of processing a wafer (W), having a first side (1) with a device area (2) comprising a plurality of devices, and a second side (6) being opposite to the first side (1), wherein the second side (6) has a plurality of protrusions (14) protruding along a thickness direction of the wafer (W). The method comprises providing a protective film (4), providing a base O sheet (7) having a cushioning layer (13) applied to a front surface (17) thereof, attaching a front surface of the protective film (4) to the O O 013 1-1 an adhesive (9), and attaching a back surface of the protective film (4) opposite to the front surface thereof to the cushioning layer (13). The protrusions (14) protruding along the thickness direction of the wafer (W) are embedded in the cushioning layer (13) and a back second side (6) of the wafer (W), wherein the protective film (4) is adhered to at least a peripheral portion of the second side (6) with surface (18) of the base sheet (7) opposite to the front surface (17) thereof is substantially parallel to the first side (1) of the wafer (W). O The method further comprises processing the first side (1) of the wafer (W). C