Patent SG-11201806311R-A (SG)
Title: Leveler compositions for use in copper deposition in manufacture of microelectronics
Inventor: PANECCASIO VINCENT
IPC: H01L21/768
Filed: 2017-01-24
Abstract: 600 800 1,000 times 2 °S 1anamaal P% W O 20 17 / 139087 Al —E0—C1-1 2 —CH 0—CI-1z CH CH 2 X (IN) (1P) . FIG. 1 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/139087 Al 17 August 2017 (17.08.2017) WIPO I PCT (51) International Patent Classification: C08G 65/24 (2006.01) H01L 21/02 (2006.01) C25D 3/02 (2006.01) H01L 21/288 (2006.01) C25D 3/38 (2006.01) H01L 21/768 (2006.01) (21) International Application Number: PCT/US2017/014651 (22) International Filing Date: 24 January 2017 (24.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/294,643 12 February 2016 (12.02.2016) US (71) Applicant: MACDERMID ENTHONE INC. [US/US]; 245 Freight Street, Waterbury, CT 06702 (US). (72) Inventors: PANECCASIO, Vincent; c/o MacDermid En- thone Inc., 245 Freight Street, Waterbury, CT 06702 (US). WHITTEN, Kyle; c/o MacDermid Enthone Inc., 245 Freight Street, Waterbury, CT 06702 (US). RICHARD- SON, Thomas, B.; c/o MacDermid Enthone Inc., 245 Freight Street, Waterbury, CT 06702 (US). LI, Ivan; c/o MacDermid Enthone Inc., 245 Freight Street, Waterbury, CT 06702 (US). (74) Agent: CALCAGNI, Jennifer; Carmody Torrance Sandak & Hennessey, 195 Church Street, P.O. Box 1950, New Haven, CT 06509-1950 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) [Continued on next page] (54) Title: LEVELER COMPOSITIONS FOR USE IN COPPER DEPOSITION IN MANUFACTURE OF MICROELECTRONICS 111111111111110111011111111111010111110 III 0111011111101111111101111111111111110111111 (57) : An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metaliz- ing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition com- position; and (ii) supplying electrical current to the electro- lytic deposition composition to deposit copper on the sub - strate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quatern- ized poly(epihalohydrin) comprising n repeating units cor- responding to structure IN and p repeating units correspond- ing to structure IP: WO 2017/139087 Al 11111111111111011101111011E101110111011110111111111111111111111111111111110111111 — before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h))