baber/WOPTO huggingface dataset:
Patent JP-H08138627-A (JP)
Title: Fluorescent lamp and display device equipped therewith
Inventor: IMAMURA HITOSHI
IPC: H01J61/94
Filed: 1994-11-14
Abstract: PURPOSE: To prevent light purity drop of light output and the light output drop accompanied thereby by displacing opening ends opening at a common electrode side and the opening ends opening at a translucent plate side in discharge passing holes. CONSTITUTION: Discharge passing holes 24a to 24d are opened at the respective radiative cells 26a to 26d of the circular bottom portion 24e of a taper cylinder, and anodes 28a to 28d are arranged in the respective radiative cells 26a to 26d. In the respective discharge passing holes 24a to 24d, approximately semicircular protrusions (a) in plane shapes are protruded in a parallel direction with a lamp axis, that is, in a direction to the side of an upper translucent plate so as to form the protrusions (a), and recessed portions (b) are formed inside the protrusions (a). The vertical wall faces (c) of the protrusions (a) are approximately fully opened in a horizontal direction so as to form side face openings (c) so that the openings (c) and the recessed portions (c) communicate with each other. Thereby, neither part of a common electrode nor part of glow discharge produced in its vicinity is allowed to be seen, so that purpose can be achieved.
Patent JP-S63132244-A (JP)
Title: Electrophotographic sensitive body
Inventor: TAMAKI KIYOSHI
IPC: G03G5/05
Filed: 1986-11-21
Abstract: PURPOSE:To obtain an electrophotographic sensitive body applicable to positive and negative charge, having high sensitivity and high resistance to environmental change by incorporating a specified compd. into an electrophotographic sensitive body having layers contg. a charge generating material (CGM) and a charge transfer material (CTM) on an electroconductive substrate. CONSTITUTION:A compd. expressed by the formula is contained in the layers constructing an electrophotographic sensitive body having layers contg. a CGM and a CTM on an electroconductive substrate. In the formula, R1 is OH, alkoxy, etc. substituting H; n is an integer 0-3. R is H atom or alkyl, etc. For example, a photosensitive layer 4 constituted of laminated layers comprising a charge generating layer 2 contg. CGM 5 and, if necessary, binder resin as a lower layer, and a charge transfer layer 3 contg. CTM 6 and, if necessary, binder resin, as an upper layer is formed on the substrate 1. By this constitution, the lowering of potential at the corona discharge during irradiation with ultraviolet rays is improved remarkably, and the sensitivity is hardly reduced.
Patent JP-H01121708-A (JP)
Title: Shape measuring instrument
Inventor: WAKATAKE SHINICHI
IPC: G01M11/00
Filed: 1987-11-04
Abstract: PURPOSE:To measure the angle theta between the optical axes of light of (0)th order and light of 1st order by measuring the light intensity values of the light beams of (0)th order, 1st order, and 2nd order from the incident light intensity of an image sensor and the dimming rate of a filter respectively. CONSTITUTION:Parallel light 2 with wavelength lambda which is outputted by a laser oscillator 7 is made incident on the surface (x) of an optical disk 8 made of a base material with a refractive index (n) and separated spectrally into the light 2 of (0)th order, the light 4 of 1st order, and light beams 5 and 6 of 2nd order by grooves which are present in the surface (y) and have groove pitch (a), groove width (l), and groove depth (c). Then the image sensor 11 sends an output signal 9 proportional to the light intensity values of the light 2 of (0)th order, the 1st light 3 of 1st order, the 2nd light 4 of 1st order, the 1st light of 2nd order, and the 2nd light 6 of 2nd order to a processing part 10. The processing part 10 finds the light intensity values I01, I11, and I21 of the light beams of (0)th order, 1st order, and 2nd order from the output signal 9, calculates the dimming rate of the reducing filter, and finds the intensity I01 of the light of (0)th order, the intensity I1 of the light of 1st order, and the intensity I2 of 2nd order respectively. Then the angle theta between the optical axes of the light of (0)th order and the light of 1st order is found as theta=tan<-1>m/1 from the distance (l) between an optical disk 8 which is fixed previously and the image sensor 11.
Patent JP-H04153050-A (JP)
Title: Character printing system for non-impact printer
Inventor: ISHIZAKI SETSUKO
IPC: B41J2/485
Filed: 1990-10-18
Abstract: PURPOSE:To prevent designating characters from reducing and make it possible to use a character code common to vertical and horizontal characters by providing a structure wherein control information for making horizontal and vertical patterns correspond to 1 character code is stored and either pattern is selected at printing characters. CONSTITUTION:A character code whose printed result is correct even if a character is turned by 90 deg. is stored in only a horizontal character pattern storing area 2. Each character pattern of a character code whose printed result is not correct when it is turned is stored in horizontal and vertical character pattern storing areas 2 and 3. Control information at every character code is stored in a control information area 7. When horizontal characters are to be printed, the horizontal character pattern is always used. When vertical characters are to be printed, it will be made out that there is not a vertical character pattern for a turnable character from the control information, so that the horizontal character pattern is taken out from the horizontal character pattern storing area 2. On the other hand, it will be made out that there is the vertical character pattern for an unturnable character from the control information, so that the vertical character pattern is taken out from the vertical character pattern storing area 3 and the printing is performed by turning each character pattern by 90 deg..
Patent JP-S62138901-A (JP)
Title: Controller
Inventor: HORII YUJI
IPC: G05B9/02
Filed: 1985-12-12
Abstract: PURPOSE:To make a recovery to a normal state speedily even if a signal holding means is caused by the noise to malfunction by providing an interruption signal generating means which generates an interruption signal for outputting a state control signal from a control means at constant intervals. CONSTITUTION:A program timer 5 and a programmable interruption controller 6 sets a process which interrupts a CPU1 at constant intervals and a normal state control signal outputted by the CPU1 is outputted to an output port 3 for turning on an LED4 through a latch circuit 2 during said process. This interruption processing is performed continuously at constant intervals, so even when the held contents of the latch circuit 2 change owing to the noise, etc., or when the output signal of the port changes, the output of the port recovers to the normal state as the latch circuit 2 is rewritten with the normal signal with delay of the maximum interruption period.
Patent JP-H06130326-A (JP)
Title: Projection type display device
Inventor: YAJIMA MITSURU
IPC: G02B27/18
Filed: 1992-10-19
Abstract: PURPOSE:To provide the projection type display device which projects screen images by plural color components on a screen one over another, equalizes the sizes of the screen images by the color components on the screen without a large increase in cost, puts the respective screen images in focus to an extent where there is no damage to obtain an excellent display image. CONSTITUTION:Light reflecting surfaces of dichroic mirrors 16 and 17 or light reflecting surfaces of reflecting mirrors 14 and 20 which guide lights passed through liquid crystal display panels 15, 18, and 19 to the corresponding dichroic mirrors 16 and 17 are varied in curvature. The screen images by the color components which are projected on the screen 22 are adjusted to the same size. Other screen images do not become different in back focus and the need for the improvement of surface precision by polishing and the need to provide an extra lens for compensation are eliminated; and the excellent composite display image is obtained while the respective screen images are equalized in size.
Patent JP-H04152890-A (JP)
Title: Production of red dyestuff by culture cell of safflower
Inventor: UEHARA YOSHIKO
IPC: C12P1/00
Filed: 1990-10-18
Abstract: PURPOSE:To stably produce a red dyestuff by culturing a cultured cell of safflower in a liquid medium containing a polysaccharide. CONSTITUTION:A cultured cell of safflower is cultured in a liquid medium containing preferably 1-5mg polysaccharide (e.g. agar, carrageenan, sodium alginate or xanthan gum), preferably under darkness at 25 deg.C by spinner culture or roller tube culture to give the objective dyestuff.
Patent JP-H02283776-A (JP)
Title: Room-temperature curing coating composition
Inventor: INOUE YOSHIO
IPC: C09D183/04
Filed: 1989-10-27
Abstract: PURPOSE:To prepare a room-temp. curing coating compsn. which exhibits excellent stainproof properties when used as a sealant or coating material esp. in an outdoor construction by compounding a specific organosiloxane block copolymer with a specific organosilicon compd. and a specific methylpolysiloxane. CONSTITUTION:A room-temp. curing coating compsn. is prepd. by compounding 100 pts.wt. organosiloxane block copolymer comprisng 50-85mol% diorganosiloxane unit of formula I [wherein R<1> and R<2> are each an optionally substd. monovalent 1-6C hydrocarbon group] and 15-50mol% siloxane unit selected from the group consisting of a fluoroalkylsiloxane unit of formula II, a fluoroalkylethersiloxane unit of formula III (wherein a n and m are each 1-8; and l is 1-3), and phenylsiloxane unit of formula IV; 1-100 pts.wt. organosilicon compd. of formula V [wherein R<3> is an optionally substd. monovalent 1-6C hydrocarbon group; X is a hydrolyzable group; and a is 0 or 1); and 0.5-100 pts.wt. oxyalkylene group-contg. metylpolysiloxane of formula VI (wherein R<4> is methyl or trimethylsiloxy; R<5> is ethylene or propylene; R<6> is a monovalent hydrocarbon group; X is a hydrolyzable group; a is 0 or 1; and b is 1-50).
Patent JP-H03143963-A (JP)
Title: Radiation-curable resin composition, radiation-curable coating composition and laminated precoated metal prepared by using it
Inventor: YAMAMOTO SHINPEI
IPC: C09D5/00
Filed: 1989-10-28
Abstract: PURPOSE:To obtain the title resin compsn. with excellent stain resistance and mechanical characteristics by using each specified monomer and oligomer and/or polymer as main ingredients and specifying the amt. of hydroxyl groups in the compsn. in a specified range. CONSTITUTION:A monomer with an unsatd. double bond and a hydroxyl group (e.g. pentaerythritol triacrylate) and an oligomer and/or a polymer each with an unsatd. double bond (e.g. a polyurethane acrylate obtd. by reacting a copolymerized polyester polyol with 4,4-diphenylmethane diisocyanate, then reacting the reaction product with pentaerythritol acrylate, and furthermore reacting the reaction product with neopentyl glycol hydroxypivalate) are used as main ingredients and the amt. of hydroxyl groups in the compsn. is specified in a range of 100-5,000eq/10<6>g.
Patent JP-H07240208-A (JP)
Title: Preparation of electrochemical multilayer assembly
Inventor: MISHIERU GUGAN
IPC: H01M10/05
Filed: 1994-11-15
Abstract: PURPOSE: To industrially utilize a multilayer assembly having a polymer electrolyte by extruding an electrode made of given material and the electrolyte into a multilayer structure, and by molding them. CONSTITUTION: A negative electrode 80 of a metallic film is extruded and molded on a metallized support film 90, and then an electrolyte film 10 using a film made of ion conductor polymer as a base material is extruded and molded. Subsequently, a lithium positive electrode 70 is extruded and molded on a support film 92, and they are bonded together by calender processing and are spirally wound. At this time, the total thickness of a multilayer structure is in the range of 100 to 500 μm, and the metallized film 90 is a polypropylene film which has a thickness of 15 to 257 μm and which is coated with nickel having a thickness of 20 to 100 nm. The support film 92 is a polypropylene film which has a thickness of 15 to 25 μm.  In this manner, the extrusion molding prevents contamination without using a solvent, and the deterioration of a drying process is eliminated because there is no drying process, and an assembly can be manufactured in a short manufacturing line.
Patent JP-S62139356-A (JP)
Title: Semiconductor device
Inventor: ENDO NOBUHIRO
IPC: H01L21/768
Filed: 1985-12-12
Abstract: PURPOSE:To enable high integration of an element by forming the openings of inter-layer insulating film in the semiconductor surface, providing a collector electrode wiring, and bonding the insulator layer and the supporting substrate with an insulating bonding layer, thereby making the unit size of a transistor small. CONSTITUTION:In a semiconductor layer surrounded by an insulator element isolation region, an emitter region 5, a base region 4 and a collector contact region 6 are formed. And at the collector region side or the emitter region side 5, the semiconductor layer is formed on a supporting substrate 13 through an insulator layer, and an impurity diffusion region for collector is provided on the semiconductor surface between the semiconductor layer and the insulating layer. Then, the openings of inter-layer insulating films 7, 9 are formed, and a collector electrode is provided. With this, the collector wiring distance can be made small.
Patent JP-H0593409-A (JP)
Title: Asphalt structure-reinforcing grid sheet
Inventor: HANAMORI ICHIRO
IPC: E01C11/16
Filed: 1991-09-30
Abstract: PURPOSE:To make it possible to prevent an asphalt structure from cracking and rutting effectively by coating the surface of a grid structure of synthetic fiber cords with a bituminous material containing silicon oxide. CONSTITUTION:In an asphalt structure, the surface of a grid structure of synthetic fiber cords is coated with a bituminous material containing silicon oxide. Content rate of silicon oxide as against the bituminous material is 2-20%, and particles size of silicon oxide is less than 50mum. According to the constitution, the difficulty in undoing of a roll-shaped reinforcing material due to shortage of adhesive force of a reinforcing grid sheet and temperature rising in the summer can be avoided.
Patent JP-H02126661-A (JP)
Title: Semiconductor device
Inventor: MARUYAMA ATSUSHI
IPC: H01L23/50
Filed: 1988-11-07
Abstract: PURPOSE:To prevent a bonded part from being destroyed and to enhance a positional accuracy of an external extraction terminal by a method wherein a metal sheet and an insulating sheet are fixed and bonded, exclusing a part under a bonded part of the external extraction terminal, by using a bonding material existing between both. CONSTITUTION:A semiconductor chip 8 and an external extraction terminal 5 are brazed to a substrate for semiconductor-element mounting use by using a brazing material 6. Since a difference in a coefficient of thermal expansion between a semiconductor material and a ceramic is small, a bonded part of a Cu sheet 1 and of a ceramic sheet 2 under the semiconductor chip is not destroyed even by a heat cycle. Since the Cu sheet 1 and the ceramic sheet 2 are not bonded under the terminal whose coefficient of thermal expansion is larger than that of the semiconductor material, the bonded part is not destroyed. A deformation of the Cu sheet 1 during a brazing operation of the external extraction terminal 5 to the Cu sheet 1 by using the brazing material 6 is slight; its influence on a positional accuracy of the terminal 5 and an irregularity in a thickness of the brazing material are hardly caused. An upper-part electrode of the semiconductor chip 8 is connected to the external extraction terminal bonded to the Cu sheet 1 via an insulating sheet by a bonding operation of a conductor.
Patent JP-S63136526-A (JP)
Title: Dry etching method
Inventor: IZUMI HIDEAKI
IPC: H01L21/3065
Filed: 1986-11-27
Abstract: PURPOSE:To form an etching through-hole to a forward tapered shape by adding nitrogen gas into the mixed gas of BCl3 gas and Cl2 gas in a dry etching method for a compound semiconductor base body using the mixed gas as an etching gas. CONSTITUTION:An SiO2 film 2 as an etching mask is deposited onto the rear of a GaAs semiconductor base body 1, the film 2 is removed selectively and a hole is bored, and the rear is exposed. A protective film 3 consisting of a metal as an etching stopper such as Au/Pt/Ti is formed. The sample is admitted into a chamber for a reactive ion etching device, inside of the chamber is evacuated and N2 gas is introduced, and BCl3 gas and Cl2 gas are respectively induced at the rates of 20CC/min and 2CC/min. Displacement is adjusted so that pressure in the chamber at that reaches 1.7Pa. RF power is applied and the gases are activated, and an SiO2 mask opening section is etched and a through- hole 4' is shaped to the GaAs base body 1. Accordingly, the through-hole 4' is formed to a forwardly tapered shape, thus shaping a via hole having a complete electrical connection.
Patent JP-H06108101-A (JP)
Title: Water atomized stainless steel powder
Inventor: SAWAYAMA TETSUYA
IPC: B22F1/00
Filed: 1992-09-24
Abstract: PURPOSE:To provide the water atomized stainless steel powder which can be improved in mechanical characteristics and magnetical characteristics by decreasing the oxygen in a sintered body. CONSTITUTION:The ratio of the carbon and oxygen to be included in the stainless steel powder produced by a water atomization method is specified to 1 to 2.5:1 by atomic ratio. Carbon is added to the stainless steel powder and the ratio of the total of the carbon added thereto and the carbon to be contained in the above-mentioned stainless steel powder and the oxygen to be contained in the above-mentioned stainless steel powder is specified to 1 to 3:1 by atomic ratio. The carbon, the silicon oxide in the stainless steel powder and the oxygen are brought into reaction to deprive the stainless steel powder of the oxygen by reduction, by which the amt. of the silicon oxide to be formed after sintering is decreased.
Patent JP-H0595318-A (JP)
Title: Radio selective calling device
Inventor: SASAKI SATOSHI
IPC: H04W88/02
Filed: 1991-10-01
Abstract: PURPOSE:To provide the radio selective calling device which controls a voice ON/OFF control signal to a radio equipment to be in the OFF position and does not output an undesired voice after the end of communication even when an end signal from a station during communication cannot be detected due to reception interference from other station than a station during communication. CONSTITUTION:The device is provided with a means 7 outputting a frame synchronization detection signal 9 when a frame synchronization pattern is detected from reception pattern, a means 8 outputting a call detection signal 10 when the call signal pattern is detected, a 1st AND means 12 inputting the frame synchronization detection signal 9 and a call detection signal 10, a 2nd AND means 13 inputting the frame synchronization detection signal 9 and the logical inverse of the call detection signal 10, and a means 14 controlling a voice output of a receiver to be ON when an AND output of the 1st AND means goes to a high level and a voice output of a receiver to be OFF when an AND output of the 2nd AND means goes to a high level.
Patent JP-S61159198-A (JP)
Inventor: KADOTA KAZUO
IPC: G21D3/12
Filed: 1984-12-30
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S61156749-A (JP)
Title: Wafer flat plate type back side vacuum chuck
Inventor: ONO YASUYUKI
IPC: H01L21/68
Filed: 1984-12-27
Abstract: PURPOSE:To enable to handle wafers without damaging their surface by a method wherein the tip part, to be brought to come in contact with the back side of a wafer, of the main body of the title chuck is formed into a thin hollow flat plate, and a position controlling guide, which is brought in line with the outer circumference of the wafer, and an attracting vacuum hole are provided on the flat plate. CONSTITUTION:A chuck 21 is inserted between the wafers located in a carrier, a thin hollow flat plate part 11 is contacted to the back side of wafer 22, a guide 14 is brought to come in contact with the outer circumference of the wafer, and the position of the wafer, and the position of the wafer is controlled properly. When a finger hole 13 is blocked up, the wafer is attracted to the flat plate part 11 through the intermediary of a vacuum hole 12, and it is completely fixed. According to this constitution, the wafer of large caliber can also be picked out from the carrier of narrow interval, thereby enabling to have the surface of the wafer free from flaws and contamination.
Patent JP-S61152275-A (JP)
Title: Sterilization of recombinant microorganism
Inventor: SUGIMOTO SHUNJIRO
IPC: A01N47/44
Filed: 1984-12-27
Abstract: PURPOSE:To sterilize a recombinant microorganism without deteriorating the physico-chemical properties and physiological properties of the physiologically active substance in the culture liquid, by adding a salt of chlorhexidine to the culture liquid of the microorganism. CONSTITUTION:The culture liquid obtained by the cultivation of recombinant microorganism is addedw with a salt of chlorhexidine at a low concentration to effect the extermination of the recombinant microorganism without deteriorating the physico-chemical and physiological properties of the valuable substances produced in the microbial cell. The salt of chlorhexidine is preferably gluconic acid salt because of its high solubility in water, convenient use, low toxicity to man and high safety to the user.
Patent JP-H05121003-A (JP)
Title: Ac surface discharge type plasma display panel
Inventor: OKAJIMA TETSUJI
IPC: H01J11/42
Filed: 1991-10-28
Abstract: PURPOSE:To improve a life by reducing the secondary emission coefficient of the surface of the insulating layer corresponding to the edge portion of an electrode of a group of electrodes less than that of the surface of the insulating layer not corresponding to the edge portion of the group of electrodes. CONSTITUTION:The surface of the insulating layer 4 corresponding to the edge portion of a transparent electrode 3 which causes surface discharge is covered with a low gamma protection layer 5 and the portions other than the surface of the layer 4 are covered with a high gamma protection layer 6. The protection layer corresponding to the edge portion of the electrode 3 is thereby changed to a low gamma material. The layer 5 is formed, for example, of Al2O3 film and the layer 6 is formed, for example, of MgO film. In this case, discharge is caused only along the electric line of force which strikes on the portion covered with MgO and the discharge to be caused along the electric line of force which strikes on the portion covered with Al2O3 is weak and the quantity of the current which then flows is small. The ion produced by the discharge strikes on the protection layer along the electric line of force. At a portion where an electric field concentrates, almost no discharge is caused so that sputtering hardly occurs; as a result, the life is lengthened.