Patent SG-11201806324U-A (SG)
Title: Memory cell, memory device, and methods of forming the same
Inventor: FUKUZAWA HIDEAKI
IPC: H01L43/10
Filed: 2017-01-19
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization MD 1111101110101011111 Mt 01110111011 01 10111101111111101111011# International Bureau 0.. .... .. (10) International Publication Number (43) International Publication Date ..... .....!;,' WO 2017/131584 Al 3 August 2017 (03.08.2017) WI P0 I P CT — (51) (21) (22) (25) Filing Language: (26) Publication Language: (30) (71) Applicant: AGENCY FOR SCIENCE, TECHNOLOGY (72) International Patent Classification: tronics, 2 Fusionopolis Way, #08-02 Innovis Tower, Singa- H01L 43/10 (2006.01) G11C 11/16 (2006.01) pore 138634 (SG). BLIZNETSOV, Vladimir; c/o In- G11C 11/15 (2006.01) dustry Development, Institute of Microelectronics, 2 Fu- International Application Number: sionopolis Way, #08-02 Innovis Tower, Singapore 138634 PCT/SG2017/050028 (SG). (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; International Filing Date: P.O. Box 1088, Rochor Post Office, Rochor Road, Singa- 19 January 2017 (19.01.2017) pore 911833 (SG). English (81) Designated States (unless otherwise indicated, for every English kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, Priority Data: BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, 10201600735X 29 January 2016 (29.01.2016) SG DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10 KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, Connexis, Singapore 138632 (SG). MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, Inventors: FUKUZAWA, Hideaki; c/o Industry Develop- RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, ment, Institute of Microelectronics, 2 Fusionopolis Way, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, #08-02 Innovis Tower, Singapore 138634 (SG). YU, Jun; ZA, ZM, ZW. c/o Industry Development, Institute of Microelectronics, 2 Fusionopolis Way, #08-02 Innovis Tower, Singapore (84) Designated States (unless otherwise indicated, for every 138634 (SG). HAN, Michael; c/o Industry Development, kind of regional protection available): ARIPO (BW, GH, Institute of Microelectronics, 2 Fusionopolis Way, #08-02 GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, Innovis Tower, Singapore 138634 (SG). WANG, Xin- TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, peng; c/o Industry Development, Institute of Microelec- TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, [Continued on next page] — = Title: MEMORY CELL, MEMORY DEVICE, AND METHODS OF FORMING THE SAME FIG. 3 r (57) : Various embodiments may provide a memory cell including a magnetic pinned layer with a substantially j 300 fixed magnetization direction, a crystalline spacer layer in contact with the magnetic pinned layer, and a magnetic stor- age layer. The magnetic storage layer may include an amorphous interface sub-layer in contact with the crystalline 308 spacer layer, the amorphous interface sub-layer including a first alloy of iron (Fe) and at least one element. The amorph- ous storage layer may also include an amorphous enhance- 306b ment sub-layer in contact with the amorphous interface sub- layer, the amorphous enhancement sub-layer including a second alloy of iron (Fe) and at least one element. The 306a memory cell may additionally include a cap layer in contact with the amorphous enhancement sub-layer. A concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element 304 com- prised in the second alloy may be different. 302 — (54) = = = = = = 306 — — = 1-1 iv Ot in Il M Il --.... IN Il 0 ei O WO 2017/131584 All#11101M01101DEIRMEDEMIOMOIEM111111111111110110111111 LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Published: SM, TR), GW, KM, ML, MR, NE, SN, OAPI (BF, BJ, CF, CG, CI, CM, TD, TG). GA, GN, GQ, with international search report (Art. 21(3))