Patent DE-102009016131-A1 (DE)
Title: Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gaseous phase in crystal growth region of growth crucible, and growing the single crystal by deposition from silicon carbide growth gaseous phase
Inventor: STRAUBINGER THOMAS
IPC: C30B29/36
Filed: 2009-04-03
Abstract: The process for producing a silicon carbide volume single crystal (2), comprises producing a silicon carbide growth gaseous phase in a crystal growth region (5) of a growth crucible (3), growing the silicon carbide single crystal by deposition from the silicon carbide growth gaseous phase, feeding the silicon carbide growth gaseous phase from an initial powdered silicon carbide source material (6), which is present in a storage region (4) of the growth crucible, and transferring the source material portion of the silicon carbide source material to the crystal growth region. The process for producing a silicon carbide volume single crystal (2), comprises producing a silicon carbide growth gaseous phase in a crystal growth region (5) of a growth crucible (3), growing the silicon carbide single crystal by deposition from the silicon carbide growth gaseous phase, feeding the silicon carbide growth gaseous phase from an initial powdered silicon carbide source material (6), which is present in a storage region (4) of the growth crucible, transferring the source material portion of the silicon carbide source material to the crystal growth region using a silicon carbide volume intermediate block acting as gas barrier and arranged between the storage region and the crystal growth region, and depositing the source material portion on a lower side of the silicon carbide volume intermediate block turned to the storage region and later again sublimating silicon carbide growth gas species formed as silicon carbide growth gas phase on an upper side of the silicon carbide volume intermediate block turned to the crystal growth region. A first kinetic barrier is provided between the storage region and the crystal growth region, is occurred from the silicon carbide growth gas species and is mounted on its lower side of the silicon carbide volume intermediate block turned to the storage region. A second kinetic barrier is provided between the first kinetic barrier and the storage region. The silicon carbide growth gas species is transferred with a high rate through the second kinetic barrier turned to the storage region than through the first kinetic barrier turned to the crystal growth region, where the second kinetic barrier has a porosity of 50-70% and the first kinetic barrier has a porosity of 10-50%. The silicon carbide volume intermediate block is formed before beginning an actual growth process during a starting process, and is introduced in the growth crucible before beginning the actual growth process. A thickness of highly 10 mm measured in a growth direction of the growing-up silicon carbide volume single crystal is provided for the silicon carbide volume intermediate block. A flat temperature field considered vertical to the growth direction is isothermally adjusted with a straight line at a growth boundary surface of the growing-up silicon carbide volume single crystal. An independent claim is included for a single-crystal silicon carbide substrate.