baber/WOPTO huggingface dataset:
Patent TW-I683691-B (TW)
Title: Method for generating customized hit-timing list of music game automatically, non-transitory computer readable medium, computer program product and system of music game
Inventor: YEH TZU CHUN
IPC: A63F13/54
Filed: 2018-05-17
Granted: 2020-02-01
Abstract: A method for generating a customized hit-timing list of a music game automatically, a non-transitory computer readable medium, a computer program product and a system of the music game are disclosed. The method includes the steps of receiving and parsing a user’s selection in a user interface for game setting and operating, activating or applying a first generation rule for classifying the types such as the lyrics, the human voices, the string instruments and the percussive instruments of each section or frame of a user-specific or a system-preset audio source and detecting the corresponding onsets to generate at least one first raw hit-timing list and activating or applying a second generation rule for generating a hit-timing list derived from the first raw hit-timing list.
Patent TW-I674282-B (TW)
Inventor: HSIANG SHOU-JUI
IPC: C08K5/315
Filed: 2018-05-18
Granted: 2019-10-11
Abstract: 一種高分子樹脂組合物，所述高分子樹脂組合物包括改性聚苯醚高分子聚合物、氰酸酯及硬化劑，所述改性聚苯醚高分子聚合物包括一長鏈聚苯醚及至少兩個接枝在所述長鏈聚苯醚的鏈段上的改性改性官能團，所述長鏈聚苯醚為
     
或 ，其中，m為 1的正整數，n為 1的正整數，r為 1的正整數，所述改性官能團為 、 、 或 。本發明還涉及一種高分子樹脂及高分子膜。
Patent TW-I740046-B (TW)
Inventor: LIANG ZHENG-YONG
IPC: C23C16/16
Filed: 2018-05-28
Granted: 2021-09-21
Abstract: 一種原子層沉積方法及利用所述方法形成的鈷金屬膜。所述原子層沉積方法包括以下步驟。將基板置於反應腔室中。進行至少一個沉積循環，以在基板上沉積金屬膜。其中至少一個沉積循環包括以下步驟。向反應腔室中通入金屬前驅物。通入氫電漿，以與吸附在基板上的金屬前驅物發生反應，並形成金屬膜。對金屬膜進行退火製程。其中至少一個沉積循環是在紫外光照射及氫氣氣氛下進行的。
Patent TW-I664633-B (TW)
Inventor: HSIEH CHIH-CHANG
IPC: G11C16/02
Filed: 2018-05-29
Granted: 2019-07-01
Abstract: 記憶體裝置的程式化方法包括：以一程式化電壓與一程式化碼來程式化一目標記憶體晶胞；施加一第一驗證電壓與一第二驗證電壓於該目標記憶體晶胞，並得到一第一讀取資料與一第二讀取資料；以及根據該程式化碼、該第一讀取資料與該第二讀取資料來判斷該目標記憶體晶胞是否通過一真正程式化驗證及/或一虛擬程式化驗證。
Patent TW-I778126-B (TW)
Title: 晶片電子零組件的檢查挑選方法
Inventor: HARADA YUSUKE
IPC: G01R31/01
Filed: 2018-09-12
Granted: 2022-09-21
Abstract: 本發明的課題為提供一種晶片電子零組件的檢查挑選方法，係0402晶片或較0402晶片更微小尺寸之電子零組件的檢查挑選方法，包括：使用垂直或傾斜狀態配置具有晶片電子零組件收容孔的搬運圓盤，可沿著搬運圓盤的平面旋轉地軸支所構成晶片電子零組件搬運裝置，在測量晶片電子零組件的電特性之後，將具有預定的電特性的晶片電子零組件從搬運圓盤排出並回收的步驟，實現具有預定的電特性之晶片電子零組件的順利排出。
 
     
     
       其解決手段為在測量晶片電子零組件的電特性之後，將具有預定的電特性的晶片電子零組件從搬運圓盤排出之前，對收容於晶片電子零組件收容孔的晶片電子零組件施以物理衝擊，進行使晶片電子零組件從晶片電子零組件收容孔的壁面脫離的操作。
Patent TW-I793194-B (TW)
Title: 包含轉換器限制的led封裝
Inventor: MORAN BRENDAN
IPC: H01L33/58
Filed: 2018-10-09
Granted: 2023-02-21
Abstract: 本發明揭示一種發光裝置，其可包含一基板及形成於該基板之一第一表面上之一發光二極體(LED)。該LED可發射一一次光。一柵欄結構可安裝至該基板之一第二表面。該柵欄結構可包含經配置以界定一單元之複數個壁。一光轉換結構可安置於該單元中之該基板之該第二表面上。該光轉換結構可將該一次光之至少一部分轉換成具有不同於該一次光之波長之一波長之一二次光。一反射層可形成於該柵欄結構之該複數個壁、該基板之側壁及該LED之側壁之一外表面上。該反射元件及該光轉換結構可安置於該柵欄結構之該等壁之對置側上。
Patent TW-I690098-B (TW)
Inventor: YING JI-FENG
IPC: H01L43/12
Filed: 2018-10-22
Granted: 2020-04-01
Abstract: 一種半導體裝置包含磁性隨機存取記憶體基本單元。磁
性隨機存取記憶體基本單元包含：第一磁性層，安置於基底上方；第一非磁性材料層，由非磁性材料製成且安置於第一磁性層上方；第二磁性層，安置於第一非磁性材料層上方；以及第二非磁性材料層，安置於第二磁性層上方。第二磁性層包含彼此分離的多個磁性材料片。
Patent TW-I687979-B (TW)
Inventor: NELSON SR
IPC: H01L21/265
Filed: 2018-11-09
Granted: 2020-03-11
Abstract: A system and method for monitoring glitch frequency and 
energy is disclosed. More specifically, an apparatus for processing workpieces and an apparatus for monitoring glitches are disclosed. The system includes a glitch capture module that monitors the voltage of a biased component and captures any glitches that occur. 
The glitch capture module also extends the duration of that glitch so that the controller is guaranteed to observe this glitch. In certain embodiments, the glitch capture module captures the maximum energy of the glitch by storing the minimum voltage, in terms of magnitude, of the glitch.
Patent TW-I780266-B (TW)
Title: 乙烯-乙烯醇系共聚物組成物、熔融成形用材料及多層結構體
Inventor: USUI Shintaro
IPC: C08F216/06
Filed: 2018-11-22
Granted: 2022-10-11
Abstract: 就著色受到抑制的乙烯-乙烯醇系共聚物組成物而言，本發明提供一種乙烯-乙烯醇系共聚物組成物，係含有乙烯-乙烯醇系共聚物(A)、鹼土金屬化合物(B)及山梨酸酯(C)，且該山梨酸酯(C)之含量，在每單位重量之乙烯-乙烯醇系共聚物組成物中為0.00001~10ppm，該鹼土金屬化合物(B)之金屬換算含量相對於該山梨酸酯(C)之含量的比(B)/(C)為10~30000。
Patent TW-I730276-B (TW)
Title: Robotic vehicle and method for maintaining control of the same
Inventor: VON NOVAK III WILLIAM HENRY
IPC: G05D1/00
Filed: 2018-12-20
Granted: 2021-06-11
Abstract: Embodiments include devices and methods for maintaining control of a robotic vehicle when control signals from a main controller are lost. A detector circuit may monitor signals from the main controller to an electronic speed controller (ESC) to detect a loss of valid control signals. The detector circuit may cause an auxiliary controller to begin issuing motor control signals to the ESC in response to detecting a loss of valid control signals. The auxiliary controller may be configured to issue motor control signals to the ESC according to a pre-loaded set of motor control instructions. The pre-loaded set of motor control instructions may be received from the main controller and/or may be configured to cause the auxiliary controller to issue motor control signals to the ESC that control motors in a manner that causes the robotic vehicle to enter a safe mode of operation or execute a particular maneuver.
Patent TW-I781286-B (TW)
Title: 蒸鍍罩幕用覆金屬層疊板及其製造方法
Inventor: ANDO TOMONORI
IPC: H01L51/52
Filed: 2019-02-01
Granted: 2022-10-21
Abstract: 本發明提供一種提升了含鎳元素的金屬層與聚醯亞胺層的剝離強度的覆金屬層疊板及其製造方法。覆金屬層疊體包括：含鎳元素的金屬層、及包含層疊於所述金屬層上的單層或多層的聚醯亞胺層的絕緣樹脂層，且所述金屬層是藉由利用X射線光電子分光法對與所述絕緣樹脂層接觸的表面進行測定，而觀測到氧化鎳的峰值，且未觀測到鎳的峰值的金屬層。所述覆金屬層疊板的製造方法包括：(a)藉由將聚醯亞胺前體的樹脂溶液塗布於含鎳元素的金屬構件並進行熱處理，而形成具有單層或多層的聚醯亞胺層的絕緣樹脂層的步驟；(b)藉由在包含氧化劑的環境中對所述金屬構件進行氧化處理，而在形成所述絕緣樹脂層一側的表面形成氧化鎳的被膜的步驟。
Patent TW-I797254-B (TW)
Title: 載子壽命測定方法及載子壽命測定裝置
Inventor: NAKAMURA TOMONORI
IPC: G01N21/21
Filed: 2019-02-14
Granted: 2023-04-01
Abstract: 本發明係計測測定對象物中之載子壽命之載子壽命測定方法，其具備：照射步驟，其係朝向作為測定對象物之DUT10，照射計測光、及以複數個頻率進行強度調變所得之刺激光；輸出步驟，其係檢測來自DUT10之反射光或透過光之強度並輸出檢測信號；及產生步驟，其係檢測相對於包含複數個頻率中之對應於計測對象區域之雜質濃度之頻率之調變信號的檢測信號之相位延遲，並基於相位延遲，產生表示DUT10中之載子壽命之分佈之圖像資料。
Patent TW-I765138-B (TW)
Title: Host system and method thereof and acceleration module
Inventor: KACHARE RAMDAS P
IPC: G06F13/42
Filed: 2019-02-14
Granted: 2022-05-21
Abstract: A host system is disclosed. The system may include a 
processor running an application program, a memory storing data being used by the application program, an upstream interface communicating with the processor, a downstream interface communicating with a storage device. The system may also include 
an acceleration module implemented using hardware and including an Acceleration Platform Manager (APM-F) to execute an acceleration instruction. The storage device may include an endpoint of the storage device for communicating with the acceleration module, a controller to manage operations of the storage device, storage for application data for the application program, and a storage device Acceleration Platform Manager (APM-S) to assist the APM-F in executing the acceleration instruction. The processor, the acceleration module, and the storage device may communicate via a Peripheral Component Interconnect Express (PCIe) bus. The acceleration module may support performing the acceleration instruction on the application data on the storage device for the application program without loading the application data into the memory. A method of the host system and an acceleration module are provided.
Patent TW-I794418-B (TW)
Title: 活性能量線硬化型接著劑組成物、偏光薄膜及其製造方法、光學薄膜以及影像顯示裝置
Inventor: OKAMOTO MASAYUKI
IPC: B32B37/12
Filed: 2019-02-22
Granted: 2023-03-01
Abstract: 一種活性能量線硬化型接著劑組成物，係含有活性能量線硬化型化合物(A)、(B)及(C)作為硬化性成分者，並且令組成物總量為100重量%時，含有：0.0~4.0重量%之SP值為29.0(MJ/m 3 
) 1/2 
以上且32.0(MJ/m 3 
) 1/2 
以下的活性能量線硬化型化合物(A)、5.0~98.0重量%之SP值為18.0(MJ/m 3 
) 1/2 
以上且低於21.0(MJ/m 3 
) 1/2 
的活性能量線硬化型化合物(B)、及5.0~98.0重量%之SP值為21.0(MJ/m 3 
) 1/2 
以上且26.0(MJ/m 3 
) 1/2 
以下的活性能量線硬化型化合物(C)。
Patent TW-I704921-B (TW)
Title: 利用鍶元素激活生長因子的方法
Inventor: Chen wen-xiong
IPC: A61K38/18
Filed: 2019-02-23
Granted: 2020-09-21
Abstract: 一種利用鍶元素激活生長因子的方法，用於活化一包含幹細胞生長因子之樣品，依序包含一激活步驟，及一編碼步驟。在該激活步驟中，是在該樣品中加入鍶並與水一同攪拌；而在該編碼步驟中，是以雷射照射該樣品並攪拌。藉由該激活步驟及該編碼步驟，活化樣品中的幹細胞生長因子，藉此達成提高營養價值之功效。
Patent TW-I697833-B (TW)
Inventor: ZHENG LI-FAN
IPC: G09G5/00
Filed: 2019-03-05
Granted: 2020-07-01
Abstract: 本發明係提供一種顯示裝置。顯示裝置包括一顯示面板以及一顯示控制器。顯示控制器係透過顯示裝置之一USB Type-C介面以電性連接至一主機之USB Type-C介面。因應於顯示裝置之該USB Type-C介面處於一USB Type-C預設腳位指派模式時，顯示控制器係從顯示裝置之USB Type-C介面之4個USB極速傳輸通道中的其中兩者由該主機接收一影像信號，並將影像信號在顯示面板上播放。因應於顯示裝置之一顯示模式滿足一特定條件時，顯示控制器係控制顯示裝置之USB Type-C介面進入一USB Type-C第一腳位指派模式，使得主機係利用顯示裝置之USB Type-C介面之4個USB極速傳輸通道傳輸影像信號至顯示控制器。
Patent TW-I708051-B (TW)
Title: 用於處理腔室之奈米顆粒測量
Inventor: WANG JIANSHENG
IPC: G01N21/31
Filed: 2019-03-06
Granted: 2020-10-21
Abstract: 在一實施例中，一種藉由使用單顆粒感應耦合電漿質譜分析術(spICPMS)來量測來自樣本的奈米顆粒的方法包括藉由以下方式從樣本表面分隔奈米顆粒：將表面曝露於第一液體介質之第一曝露表面；及機械操縱第一液體介質；及藉由使用單顆粒感應耦合電漿質譜分析術量測第一液體介質。在一實施例中，偵測處理腔室中之奈米顆粒污染物之一種方法包括在處理操作之後從處理腔室移除第一部件；及藉由使用單顆粒感應耦合電漿質譜分析術量測來自第一部件的第一奈米顆粒，包含以下步驟：藉由將第一表面之第一部分曝露於第一液體介質之第一曝露表面，及機械操縱該第一液體介質，來從第一部件之第一表面分隔第一奈米顆粒。
Patent TW-I778253-B (TW)
Inventor: DEN BOER WILLEM
IPC: B62M3/00
Filed: 2019-04-17
Granted: 2022-09-21
Abstract: A cycle crank assembly includes a crank spindle and a drivetrain connector configured to translate rotation of the crank spindle into rotation of a wheel. A crank arm includes a pedal interface configured to receive a pedal spindle of a cycle pedal. A slip connection is configured to allow the crank arm to rotate about the crank spindle. A resiliently deformable member is connected to the crank spindle and the crank arm proximate to the pedal interface. The resiliently deformable member translates rotation of the crank arm into rotation of the crank spindle. The resiliently deformable member deforms under load to store pedal energy provided by a rider to the cycle pedal and returns at least a portion of the pedal energy when not under load in a direction of the rotation.
Patent TW-I724421-B (TW)
Inventor: Fang Hao-Jen
IPC: A63F13/24
Filed: 2019-05-16
Granted: 2021-04-11
Abstract: 一種遊戲裝置，包括一主體、兩手把、兩滑動座、一驅動組件以及一切換組件。主體具有一內部空間及連通內部空間的兩開口。兩手把配置於主體的相對兩側且分別對應兩開口。兩滑動座位於內部空間中且分別連接兩手把。驅動組件連接兩滑動座。切換組件配置於主體，適於切換為耦合狀態以卡合兩滑動座或是切換為脫鉤狀態以脫離兩滑動座。
Patent TW-I723420-B (TW)
Title: Device with large epi in finfets and method of manufacturing
Inventor: PENG JIANWEI
IPC: H01L27/092
Filed: 2019-06-11
Granted: 2021-04-01
Abstract: A method of forming a logic or memory cell with an epi-RSD width of larger than 1.3x fin pitch and the resulting device are provided. Embodiments include a device including a RSD region formed on each of a plurality of fins over a substrate, wherein the RSD has a width larger than 1.3x fin pitch, a TS formed on the RSD, and an ILD formed over the TS.
Patent TW-I722461-B (TW)
Inventor: TURNER PETER
IPC: H04L12/727
Filed: 2019-06-27
Granted: 2021-03-21
Abstract: 本發明提供用於提供一共享擴增實境環境之系統及方法。特定言之，藉由使用一同級間協定來判定將資料包發送至何處而降低通信延遲。資料包描述該共享擴增實境環境內發生之動作，且資料包之處理在一通信網路之一中間節點(例如，一手機信號塔信號塔)與一伺服器之間分離。因此，該中間節點可在一資料包被標記為同級間時提供對一用戶端裝置之一本端狀態之更新，且否則提供對該伺服器上之主控狀態之更新。此可降低該通信延遲且容許基於位置之平行實境遊戲之使用者看到動作在該共享擴增實境環境中更快速地發生。
Patent TW-I728410-B (TW)
Title: Circuit board structure and manufacturing method thereof
Inventor: LIN CHIEN CHEN
IPC: H05K3/40
Filed: 2019-07-18
Granted: 2021-05-21
Abstract: A method of manufacturing circuit board structure, comprises forming a sacrificial layer on a substrate, in which the sacrificial layer has a plurality of first openings exposing a portion of the substrate; forming a metal layer on sidewalls and upper surface of the sacrificial layer; forming a patterned photoresist layer over the sacrificial layer, 
in which the patterned photoresist layer has a plurality of second openings connecting to the first openings and exposing a portion of the metal layer; forming a first circuit layer filling in the second openings and the first openings and covering the portion of the metal layer; forming a first dielectric layer over the sacrificial layer and covering the metal layer, in which the first dielectric layer has a plurality of third openings exposing the first circuit layer; forming a second circuit layer filling in the third openings and covering a portion of the first dielectric layer; removing the substrate, such that the sacrificial layer, a portion of the metal layer, and a portion of the first circuit layer are exposed; and removing the sacrificial layer and the metal layer.
Patent TW-I701842-B (TW)
Inventor: WU CHIEN-LUNG
IPC: H01L31/18
Filed: 2019-08-05
Granted: 2020-08-11
Abstract: 一種影像感測器，包括基底、感光元件、摻雜區、第一閘極、開槽式遮光層與第二閘極。感光元件位在基底中。摻雜區位在感光元件的一側的基底中。第一閘極設置在摻雜區上方。第一閘極具有凹槽。開槽式遮光層設置在凹槽的表面上，且位在摻雜區上方。第二閘極設置在感光元件與摻雜區之間的基底上。
Patent TW-I689381-B (TW)
Title: 提高工作頭強度之手工具
Inventor: Xie zhi-qing
IPC: B25B23/00
Filed: 2019-08-14
Granted: 2020-04-01
Abstract: 本發明係一種提高工作頭強度之手工具，其包含：一主體，其前端係間隔設有二平行之耳部；一工作頭，具有一樞接部，該樞接部係樞設於該主體之耳部之間，一柱部，一端連接於該樞接部之周緣；一強化部，自該樞接部之周緣向該柱部延伸，設於該樞接部及該柱部之交接處，該強化部之外徑大於該柱部之外徑，該強化部可以增加柱部的強度，相對可提升該柱部施加於該工件上之扭力，增加其耐用性及強度。
Patent TW-I719603-B (TW)
Title: Connecting module and electronic device
Inventor: HO ZONG-HAN
IPC: G06F1/16
Filed: 2019-08-23
Granted: 2021-02-21
Abstract: A connecting module is provided, including a housing, a circuit board, a slider, a first guiding member, and a second guiding member. The housing has an opening. The circuit board is disposed on the housing, and includes a first connecting port and a second connecting port. The slider is movably disposed on the housing. The first guiding member is disposed between the opening and the first connecting port. The second guiding member is disposed on the slider and situated between the opening and the second connecting port. Owing to the aforementioned structure, different electronic members can connect to the first connecting port and the second connecting port. The connecting module can therefore support different electronic members.
Patent TW-I716102-B (TW)
Title: 利用ｇｐｕ集群更新卷積神經網路的方法、裝置及設備
Inventor: Huang qi-yin
IPC: G06N3/08
Filed: 2019-09-09
Granted: 2021-01-11
Abstract: 本說明書實施例提供一種利用GPU集群更新卷積神經網路的方法、裝置及設備，該GPU集群包括第一GPU以及若干其它GPU。該方法由第一GPU執行，包括：獲取帶分類標籤的樣本。基於前端各層網路的參數，對樣本執行第一操作得到第一操作結果。基於第一操作結果以及具有的後端各層網路的參數，對樣本執行第二操作得到第二操作結果。將第一操作結果分別發送給其它GPU。接收其它各GPU在基於各自具有的後端各層網路的參數以及第一操作結果，對樣本執行第三操作後得到的第三操作結果。合併第二操作結果和第三操作結果得到分類結果。根據分類結果和分類標籤，確定預測誤差。根據預測誤差，更新卷積神經網路。
Patent TW-I745745-B (TW)
Inventor: LIN MENG-WEI
IPC: G03B11/04
Filed: 2019-09-10
Granted: 2021-11-11
Abstract: A imaging lens including an aperture and a lens element having refracting power arranged from a magnified-side to a reduced-side along an optical axis is provided. The aperture includes a substrate and a light-shielding layer. The substrate includes a first middle region and a first outer edge region surrounding the first middle region. The first outer edge region allows visible light and infrared light to substantially pass therethrough. The light-shielding layer includes a second middle region and a second outer edge region surrounding the second middle region. The second outer edge region allows infrared light to substantially pass therethrough and substantially shields visible light. A thickness of the aperture is between 0.01 mm to 0.3mm along an optical axis direction. Furthermore, the other imaging lens and a manufacturing method of a light-shielding element are also provided.
Patent TW-I721564-B (TW)
Title: Semiconductor structure and method of fabricating the same
Inventor: CHEN HSIEN-WEI
IPC: H01L21/768
Filed: 2019-09-18
Granted: 2021-03-11
Abstract: Semiconductor packages and methods of forming the same are disclosed. One of the methods includes the following steps. A first die is provided, wherein the first die comprises a first substrate, a first interconnect structure over the first substrate, and a first pad disposed over and electrically connected to the first interconnect structure. A first bonding dielectric layer is formed over the first die to cover the first die. By using a single damascene process, a first bonding via penetrating the first bonding dielectric layer is formed, to electrically connect the first interconnect structure.
Patent TW-I754176-B (TW)
Inventor: BOONE THOMAS C
IPC: C12N5/10
Filed: 2009-12-22
Granted: 2022-02-01
Abstract: Antigen binding proteins that bind to human CGRP receptor (CGRP R) are provided. Nucleic acids encoding the antigen binding protein, vectors, and cells encoding the same are also provided. The antigen binding proteins can inhibit binding of CGRP R to CGRP, and are useful in a number of CGRP R related disorders, including the treatment and/or prevention of migraine headaches.
Patent TW-I723575-B (TW)
Title: Hot plug sata storage device with security protection mechanism
Inventor: LIU PO-JUNG
IPC: G06F13/38
Filed: 2019-10-14
Granted: 2021-04-01
Abstract: A hot plug SATA storage device designates an ISR to a physical pin of the data channel. The ISR is triggered based on the disabled state of the physical pin when the data channel of the SATA interface is disconnected while the power channel of the SATA interface is still ON. The control unit of the storage device then activates a protection procedure on the storage device according to the triggered ISR.
Patent TW-I726469-B (TW)
Title: Method and device for automatically acquiring status information
Inventor: LIAO WEI-CHIEH
IPC: G06F16/20
Filed: 2019-10-31
Granted: 2021-05-01
Abstract: A method for automatically acquiring status information is provided. The method includes the following steps: enabling a specified code, obtaining a status information in response to that the specified code being enabled, wherein the status information includes at least one of the system information and an error information; and converting the status information to an information barcode according to a default mode.
Patent TW-I695212-B (TW)
Inventor: WANG SHIH MING
IPC: G02F1/13357
Filed: 2018-11-23
Granted: 2020-06-01
Abstract: 本發明提供一種背光模組，包含有底板、複數光源、光學調控元件及/或複數微結構。複數光源分別設置於底板上；光學調控元件則設置覆蓋複數光源。光學調控元件布設有複數出光孔，且光學調控元件包含頂板及兩側板，兩側板分別自頂板的二相對側彎折伸出。複數微結構對應各複數光源設置於光學調控元件之頂板。其中複數微結構或頂板將以第一角度入射至頂板的光線主要以第二角度反射，且第二角度大於第一角度。
Patent TW-I709238-B (TW)
Inventor: TAKEUCHI HIDEKI
IPC: H01L29/94
Filed: 2019-11-13
Granted: 2020-11-01
Abstract: A method for making a semiconductor device may include forming spaced apart source and drain regions in a semiconductor layer with a channel region extending therebetween. At least one of the source and drain regions may be divided into a lower region and an upper region by a dopant diffusion blocking superlattice with the upper region having a same conductivity and higher dopant concentration than the lower region. The method may further include forming a gate on the channel region, depositing at least one metal layer on the upper region, and applying heat to move upward non-semiconductor atoms from the non-semiconductor monolayers to react with the at least one metal layer to form a contact insulating interface between the upper region and adjacent portions of the at least one metal layer.
Patent TW-I724637-B (TW)
Title: 探針
Inventor: SUEMASA HAJIME
IPC: G01R1/067
Filed: 2019-11-19
Granted: 2021-04-11
Abstract: 本發明之探針用於進行連接器之特性檢查，其具備：柱塞、同軸纜線、法蘭盤、及殼體，殼體之一側之端部具有自本體部在水平方向擴徑之擴徑部，在法蘭盤之上表面形成有以承接殼體之擴徑部之方式將貫通孔在水平方向擴大之凹部，擴徑部具有：與形成凹部之法蘭盤之內側面部分地接觸或對向之側壁、及抵接於形成凹部之法蘭盤之上表面之底壁，擴徑部具有將側壁與底壁連接之連接面，連接面係自側壁朝向底壁朝內側傾斜之傾斜面，或者，形成凹部之法蘭盤之內側面具有朝斜下方傾斜之第1面，鉛直面係自第1面朝下方延伸且連接於法蘭盤之上表面之第2面。
Patent TW-I742491-B (TW)
Title: 節能訊號的傳輸方法、終端、網路側設備及電腦可讀存儲介質
Inventor: WANG JIAQING
IPC: H04W52/02
Filed: 2019-12-24
Granted: 2021-10-11
Abstract: 本發明為一種節能訊號的傳輸方法、終端、網路側設備及電腦可讀存儲介質，該方法包括：終端接收網路側設備發送的節能訊號；其中，該節能訊號為多級序列，且該多級序列至少攜帶節能標識、節能區域標識和該多級序列的級指示資訊，該節能標識與節能區域內需要喚醒的終端對應，該節能區域為該節能區域標識指示的區域；或者，該節能訊號包括第一級節能訊號和第二級節能訊號，其中，該第一級節能訊號和該第二級節能訊號分別攜帶不同的節能資訊。
Patent TW-I732435-B (TW)
Title: 加工鈦材的製造方法
Inventor: KUNIEDA TOMONORI
IPC: B21B1/02
Filed: 2020-01-21
Granted: 2021-07-01
Abstract: 本發明使用軋輥直徑為20mm以上且在90mm以下的軋延輥，按合計軋縮量1.0%以上對鈦胚料進行冷軋延或溫軋延，藉此在前述鈦胚料的表層賦予應變。根據以此製造方法獲得之加工鈦材，可減少在熱軋延時產生的表面瑕疵。
Patent TW-I771650-B (TW)
Title: 電連接器及電連接器的製造方法
Inventor: MURAKAMI HARUHIKO
IPC: H01R12/65
Filed: 2020-02-13
Granted: 2022-07-21
Abstract: 本發明的課題係在於提供即使具有形狀互相不同的補強扣件，也能以較少的工時簡單且廉價地製造的電連接器及電連接器的製造方法。
用以解決課題的手段為，金屬構件係具有形狀互相不同的複數種金屬構件(40、50)，該複數種金屬構件(40、50)中之一種的金屬構件(40)與另一種的金屬構件(50)，係具有對在前後方向的殼體(10)互相以相同側連接於電路基板的安裝面之連接部(42、52)，前述一種的金屬構件(40)與前述另一種的金屬構件(50)係彎曲部(44、45)和彎曲部(54、55)之對前述安裝面的彎曲的角度互相不同，並且彎曲部以外的部分互相形成相同形狀。
Patent TW-I740392-B (TW)
Title: 同步區塊鏈狀態資料之電腦實施的方法、非暫時性電腦可讀的媒體及電腦實現的系統
Inventor: Zhuo hai-zhen
IPC: H04L29/08
Filed: 2020-02-24
Granted: 2021-09-21
Abstract: 一種區塊鏈狀態資料同步方法，區塊鏈中的帳戶狀態資料被組織成Merkle狀態樹在資料庫中儲存；所述Merkle狀態樹包括由各區塊鏈帳戶的最新帳戶狀態組織成的當前Merkle狀態樹；以及，由各區塊鏈帳戶的歷史帳戶狀態組織成的歷史Merkle狀態樹；所述方法包括：接收針對所述Merkle狀態樹的資料同步指令；回應於所述資料同步指令，即時獲取所述區塊鏈中的其它節點設備的資料庫中儲存的最新區塊的當前Merkle狀態樹；將獲取到的所述最新區塊的當前Merkle狀態樹儲存至本地資料庫，以完成針對所述Merkle狀態樹的即時資料同步。
Patent TW-I737199-B (TW)
Inventor: HUANG WEN-PIN
IPC: G01R1/04
Filed: 2020-02-27
Granted: 2021-08-21
Abstract: 本發明電子元件測試夾具包含：本體、複數夾具及啟動件；其中，本體具有複數個縱向貫穿的第一通孔及一橫向貫穿的第二通孔；該等夾具分別安裝於第一通孔內部，並於相對兩端分別形成夾持部及插接部，夾持部具有兩夾臂，而插接部形成有凸出本體的多數接線頭；啟動件具有相互連接的推桿及撥桿，該推桿具有一相鄰於夾持部的凸緣部。藉此，當啟動件由初始位置樞轉至啟動位置，凸緣部將被改變方向來推抵夾持部，使得兩夾臂由鬆脫狀態改變為將電子元件接腳夾持定位的夾緊狀態。
Patent TW-I744813-B (TW)
Title: Multi-axis movement for transfer of semiconductor devices
Inventor: PETERSON CODY
IPC: H01L21/677
Filed: 2020-03-05
Granted: 2021-11-01
Abstract: A method for executing a direct transfer of semiconductor device die from a first substrate to transfer locations on a second substrate. The method includes determining a position of impact wires disposed on a transfer head, semiconductor device die, and transfer locations; determining whether there are at least two positions that an impact wire, a semiconductor device die, and a transfer locations are aligned within a threshold tolerance; and transferring, by the impact wires, the semiconductor device die such that the semiconductor device die detaches from the first substrate and attaches to transfer locations on the second substrate. The transferring being completed based at least in part on determining that the impact wire, the semiconductor device die, and the circuit trace are aligned within the threshold tolerance.
Patent TW-I802790-B (TW)
Title: 氣體噴淋頭及其製作方法以及包括氣體噴淋頭的電漿裝置
Inventor: NI TU-QIANG
IPC: H05H1/26
Filed: 2020-03-31
Granted: 2023-05-21
Abstract: 本發明係揭露一種氣體噴淋頭及其製作方法以及包括氣體噴淋頭的電漿裝置，氣體噴淋頭包括背板及氣體分佈板，氣體分佈板上包括複數個以氣體分佈板的圓心為圓心的環形氣體分佈區；各環形氣體分佈區上設置貫穿進氣面和出氣面的複數個氣體通孔，氣體通孔至少包括沿徑向傾斜一定角度的複數個第一氣體通孔，氣體通孔進一步包括複數個第二氣體通孔，第二氣體通孔與中心軸線平行或與第一氣體通孔具有不同的徑向傾斜方向；環形環形氣體分佈區中第一氣體通孔和第二氣體通孔中流出的氣體互相遠離。
Patent TW-I761801-B (TW)
Title: Medical tube
Inventor: COLEMAN PETER NIGEL
IPC: A61M39/22
Filed: 2012-05-04
Granted: 2022-04-21
Abstract: A medical tube has a tube wall defining a passageway for transportation of gases and further has a first end and a second end. At least one end of the medical tube comprises one or more of a pre-formed pneumatic port component, a pre-formed electrical port component, and a pre-formed sensor port component. A cuff is over-moulded about and thereby connects the pneumatic port component, the electrical port component, and/or the sensor port component and at least a portion of the tube end.
Patent TW-I706879-B (TW)
Title: 碟煞鎖
Inventor: LIN YU-BIN
IPC: B62H5/18
Filed: 2020-04-30
Granted: 2020-10-11
Abstract: 本發明係在提供一種碟煞鎖，主要係設有一本體、一上補強座、一下補強座、一固定片、一插掣座、一底蓋、一插掣桿、一壓縮彈簧及一鎖心所組成，該本體、該上補強座、該下補強座與該底蓋均係由塑膠材質製成，而於該本體之容置槽及階狀通孔內灌包有金屬材質製成之上補強片及下補強片，並由該本體之凹室內設入有該上補強座及該下補強座，可提升該本體之整體強度，再藉由超音波熔接，將該本體、該上補強座、該下補強座、該固定片、該插掣座及該底蓋固設為一體，如此，整體結構質輕，可大幅降低製造成本。
Patent TW-I788672-B (TW)
Inventor: VAN DEN BRINK MARINUS AART
IPC: H01J37/256
Filed: 2019-06-05
Granted: 2023-01-01
Abstract: Described herein is a method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern; and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.