baber/WOPTO huggingface dataset:
Patent KR-19990076495-A (KR)
IPC: H05B6/64
Filed: 1998-09-10
Abstract: In order to sufficiently and properly thaw frozen food such as frozen sushi, a thawing-heating tray made of dielectric material is provided with thick portions, of which thickness is greater, disposed in the central region and the peripheral region thereof, respectively. Fixed to this tray is a reflector. The frozen food is placed on the tray and is then thawed by an electronic oven. <IMAGE>
Patent KR-19990029812-A (KR)
Title: 크랭크축밀러에 의한 공작물의 가공방법 및 가공용 커터장치
IPC: B23C5/12
Filed: 1998-09-15
Abstract: 커터드럼을 척(Chuck)위치로 퇴피시키던가, 공작물의 길이방향으로 이동시키기 위해 커터본체의 내경을 크게 하지 않으면 안되어, 가공정도를 저하시키는 원인으로 되었다. 
     공작물(3)의 적어도 한쪽 끝을 척(4)에 의해 고정하여, 회전하는 커터드럼(11)에 부착된 커터본체(12)에 의해 상기한 공작물(3)의 핀(3b) 및 저널(journal, 3c)의 적어도 한쪽을 밀링가공하는 크랭크축밀러에 있어서, 상기한 커터드럼(11)에 착탈이 자유롭도록 부착되고, 상기한 척(4)의 외경 또는 공작물(3)의 최대외경보다 직경이 큰 개구부(13b)를 갖는 어댑터(13)와, 상기한 어댑터(13)의 대략 중심부에 착탈이 자유롭도록 부착되고, 가공할 공작물(3)의 핀(3b) 및 저널(3c)의 외경보다 직경이 약간 큰 내주면(12a)에 적어도 1개의 절삭날(17)이 설치된 커터본체(12)에 의하여 구성된 것으로, 커터본체(12)의 내경을 척(4)의 외주보다 작은 직경으로 하여도, 커터본체(12)가 척(4)과 간섭하는 일이 없고, 또, 커터본체(12)의 내경을 작게하는 것에 의하여, 가공정도의 향상이 도모되게 된다.
Patent KR-19990030244-A (KR)
Title: 2단 점프를 이용하여 소오스 프로그램으로부터 오브젝트 프로그램을 생성하는 언어처리 시스템 및 방법
IPC: G06F9/45
Filed: 1998-09-29
Abstract: 언어 처리 시스템은 소오스 프로그램으로부터 메모리의 소거 가능 영역에 분기 테이블이 제공된 헤드 어드레스를 해석하는 헤드 어드레스 해석부 (41),   소오스 프로그램으로부터 분기 테이블 내에 점프 명령이 설정되는 위치를 해석하는 점프 명령 위치 해석부 (42),  점프 명령이 분기 테이블 내에 설정되는 어드레스에 대해 호출 명령을 생성하는 호출 명령 생성부 (51),  및 헤드 어드레스 해석부 (41) 및 점프 명령 위치 해석부 (42) 에 의한 해석 결과에 기초하여 메모리의 소거가능 영역에 분기 테이블을 생성하는 분기 테이블 생성부 (52) 를 구비한다.
Patent KR-20000021798-A (KR)
Title: Circuit for compensating switching time of optical coupling element
Inventor: JANG SANG DON
IPC: H02M1/092
Filed: 1998-09-30
Abstract: PURPOSE: A circuit for compensating switching time is provided to compensate the time difference between turn-on time and turn-off time of an optical coupling element. CONSTITUTION: A circuit for compensating switching time compensates the difference between turn-on time and turn-off time. The circuit has a predetermined amount of a capacitor connected in parallel to output ends of an optical coupling element, so that the turn-off time is delayed. A circuit falls AC(Alternating Current) driving voltage as the optical coupling element, and measures the average value of the AC driving voltage as the output average value of the optical coupling element. The circuit for measuring the AC driving voltage has a predetermined amount of a capacitor, connected to the output ends of the optical coupling element in parallel, so that the turn-off time of the optical coupling element is delayed.
Patent KR-20000025446-A (KR)
Title: Hydrogen ion generator for deposition of polysilicon layer and deposition method using the same
Inventor: YIM SUNG SU
IPC: H01L21/285
Filed: 1998-10-12
Abstract: PURPOSE: A hydrogen ion generator for deposition of a polysilicon layer installs a hydrogen ion generator to a hydrogen gas supply pipe provided to a reaction tube, converts a hydrogen gas to a hydrogen ion by using a light source generated from IR and UV lamps, provides the hydrogen ion to a reaction tube, thereby easily depositing a polysilicon layer at a low temperature. CONSTITUTION: A hydrogen ion generator includes a hydrogen gas supply pipe(30), a reaction gas supply pipe(10), a carrier gas supply pipe(46), a hydrogen ion generator(A), and a residual gas discharge tube(50). The hydrogen gas supply pipe provides a hydrogen gas to the reaction tube, and has a third valve which controls a moving of the hydrogen gas. The hydrogen gas supply pipe provides a reaction gas, and has a first valve for controlling a moving of the reaction gas. The carrier gas supply pipe provides a carrier gas to the reaction tube, and has a second valve which controls a moving of the carrier gas. The hydrogen ion generator applies energy to hydrogen gas applied to the hydrogen gas supply pipe, and converts the hydrogen ion. The residual gas discharge tube discharges a residual gas inside of the reaction tube to the outside, and has a fourth valve. Thereby, a polysilicon layer is easily deposited at a low temperature, increases a grain size of a transistor, and reduces a grain boundary density.
Patent KR-20000026016-A (KR)
Title: System for compensating screen quality for digital broadcasting use
Inventor: CHOI SUNG HUN
IPC: H04N9/64
Filed: 1998-10-16
Abstract: PURPOSE: A system for compensating screen quality for digital broadcasting use is provided to detect a boundary side of an image, transmitted by being compressed in MPEG(Motion Pictures Experts Group) by DCT(Discrete Cosine Transform), and to compensate a decoded image after transmitting data of the boundary side by encoding data of the boundary side. CONSTITUTION: A system for compensating screen quality for digital broadcasting use comprises: a transmitter for detecting boundary data before compressing an image, and for transmitting the boundary data by encoding with the compressed image; and a receiver for decoding the boundary data with the compressed image, transmitted from the transmitter, and for compensating a boundary of the image decoded by the boundary data. The transmitter comprises: a sampling section for sampling a video image to Y: U: V format(4: 2: 2 or 4: 2: 0) predetermined rates; an encoding section for dividing the image from the sampling section into a low frequency component and a high frequency component through DCT(Discrete Cosine Transfer), for quantizing the divided image, and for encoding the quantized image; an operation deciding section for outputting motion vector showing movements of the image by a difference component with a previous image; a boundary detector for the boundary data by receiving the sampled image; and an image stream output section for outputting I, P, B frames, compressed in MPEG(Motion Pictures Experts Group) by the encoding section and the operation deciding section, with the boundary data detected from the boundary detector.
Patent KR-20000026232-A (KR)
Title: Chamber for module ic handler
Inventor: AN TAE SEONG
IPC: G01R31/28
Filed: 1998-10-19
Abstract: PURPOSE: A chamber for module IC handler is provided to test under the actual conditions pf high temperature. CONSTITUTION: A safe-receipt flap(6) is installed to a lower plate(4) of a chamber having a lead-in hole and a discharge outlet. A carrier(5) is mounted to a plurality of safe-receipt grooves(6a). A plurality of safe-receipt grooves(6a) are formed to the safe-receipt flap(6). A plurality of module ICs is mounted to the carrier(5). A shutter is installed to the lead-in hole and the discharge outlet. Sensors(7,8) are installed on a transfer path for sensing a transfer of the carrier(5). A heater is installed to side wall of the chamber to be adjacent to the safe-receipt grooves(6a) for heating the module ICs. A plurality of fans are installed to a rear portion of the heater. A moving flap(9) is installed to an inner side of the safe-receipt flap(6). A safe-receipt groove(9a) is installed to a upper surface of the moving flap(9).
Patent KR-20000026844-A (KR)
Title: Multi optical scan unit
Inventor: EOM JAE YONG
IPC: G02B26/10
Filed: 1998-10-23
Abstract: PURPOSE: A multi optical scan unit is provided to easily perform an optical arrangement of a mirror by passing a plurality of scan line centers formed by a deviating disk into a rotating center of the deviation disk. CONSTITUTION: An operating source(31) provides a rotating force. A deviating disk(35) has a plurality of sectors in which each hologram pattern is formed. An optical source(40) is arranged to one side of the deviation disk(35) and emits a light to the deviating disk(35). An optical path converting unit converts a progress direction of a light deviated in the deviating disk(35). A scan direction revising unit(50) converts a scan direction of one scan line. The optical source(40) has four optical sources(41,43,45,47) for obtaining four scan lines corresponding to Y, M, C, BK colors. Each light emitted from four optical sources(41,43,45,47) has an equal radius to a rotating center of the deviating disk(35).
Patent KR-20000027579-A (KR)
Title: Air conditioner for recovery of waste heat
Inventor: AHN MOON HWI
IPC: F24F5/00
Filed: 1998-10-28
Abstract: PURPOSE: An air conditioner for the recovery of waste heat is provided to reduce the consumption of energy generated for cooling and heating by using the waste heat generated when discharging the heat from indoor. CONSTITUTION: An air conditioner is composed of: blowers(6,6') installed in a heat exchanging part(3) and forcibly supplying and venting air; filling members(7,7') installed on the upper part of a heat recovery part(2) and the heat exchanging part; and water tubs(8,8') installed on the lower part of the heat recovery part and the heat exchanging part. Herein, the water contained in the water tub(8') of the heat exchanging part is sprayed on the filling member(7) of the heat recovery part via a circulation pipe(18) and using a pump(9), and the water contained in the water tub(8) of the heat recovery part is sprayed on the heat exchanging part via a nozzle(10'). And the air vented from indoor is flowed into the lower of the filling member(7) of the heat recovery part via a ventilation pipe(17). And outdoor air is flowed in via one inlet of the heat exchanging part and flowed to indoor(16) via the filling member(7').
Patent KR-20000031383-A (KR)
Title: Indoor unit of package air conditioner
Inventor: KIM JAN U
IPC: F24F1/00
Filed: 1998-11-05
Abstract: PURPOSE: An indoor unit of a package air conditioner is provided to make smooth the heat exchange by supplying indoor air by installing a cross fan between an evaporative heat exchanger of an indoor unit and the bottom of an intake grill. CONSTITUTION: A blower(50) installed inside a cabinet drives according to the starting of an indoor unit and indoor air flowed inside via an intake grill(24). And the indoor air is sucked at the bottom of the intake grill by driving a cross fan(66). The indoor air passes the cross fan guided to a curved groove on the upper portion of a first guider(62) and passes the bottom of an evaporative heat exchanger(40). Then, the sucked air guided to the curved groove of the first guider is about to flow backward to indoor via the rear face of the intake grill by accelerating force. Accordingly, while the indoor air is sucked via the intake grill installed on the front lower portion of a cabinet(30), locally flow in the indoor air by the cross fan installed thereunder. Thereby the whole area of the evaporative heat exchanger is used.
Patent KR-20000037720-A (KR)
Title: Lead structure of automatic washing machine
Inventor: PARK YONG SEOK
IPC: D06F39/00
Filed: 1998-12-02
Abstract: PURPOSE: A lead structure of an automatic washing machine is provided to enable a user to see an interior of the washing machine and conceal a portion of the washing machine by using a transparent portion and an opaque portion. CONSTITUTION: A lead(111) is formed in a transparent portion(112). An opaque portion(11) is formed in the lead(111). The opaque portion(114) is formed by corroding the inner surface of the lead(111). The transparent portion(112) has a circular shape. A knob(113) is formed in the transparent portion(112) to open or close the lead(111). The lead(111) is engaged with the top cover(102) of the washing machine(101). The transparent portion(112) is formed on the surface of the lead(111).
Patent KR-19990063468-A (KR)
IPC: B41J2/175
Filed: 1998-12-24
Abstract: A liquid supply method includes a step of preparing a negative pressure producing material chamber, including a liquid supply portion for permitting supply of the liquid to an outside and an air vent for fluid communication with ambience, for accommodating a negative pressure producing member for retaining the liquid; a step of preparing a liquid containing chamber having a liquid containing portion for accommodating the liquid, the liquid containing portion forming a substantially sealed space except for fluid communication with the negative pressure producing material chamber; a first liquid supply step of permitting supply of the liquid to the outside by permitting movement of the liquid into the negative pressure producing material chamber from the liquid containing portion without introduction of the air into the liquid containing chamber with a negative pressure while permitting decrease of a volume of the liquid containing portion; a second liquid supply step, after the first liquid supply step, of permitting supply of the liquid to the outside by permitting movement of the liquid into the negative pressure producing material chamber from the liquid containing portion with introduction of the air into the liquid containing portion. <IMAGE>
Patent KR-20000043508-A (KR)
Title: Fabrication method of semiconductor device
Inventor: O SANG GEUN
IPC: H01L21/3213
Filed: 1998-12-29
Abstract: PURPOSE: A method for fabricating a semiconductor device is provided to reduce a thickness of a photoresist layer and to realize a higher etch selectivity of the photoresist layer. CONSTITUTION: A fabricating process for a semiconductor device includes a step of forming a polysilicon layer(22) on a semiconductor substrate(20), a step of coating a photoresist layer on the polysilicon layer(22), a step of forming a photoresist pattern(28) from the photoresist layer, a step of curing the photoresist pattern(28), and etching the polysilicon layer(22) by employing the photoresist pattern(28) as an etch mask. In particular, the photoresist pattern(28) is carbonized before the curing step. The carbonization of the photoresist pattern(28) is carried out by an ion implantation process. Preferably, argon ion is implanted at a tilt angle. Since the carbonized photoresist pattern(28) has a higher etch resistance than ever, a thinner photoresist pattern is obtained.
Patent KR-20000045470-A (KR)
Title: Fabrication method of semiconductor device
Inventor: PARK SANG IL
IPC: H01L21/339
Filed: 1998-12-30
Abstract: PURPOSE: A fabrication method of semiconductor device is provided to form transistors having different performance by same process, thereby enhancing the performance of the transistors and preventing short channel effect. CONSTITUTION: A fabrication method of semiconductor device comprises steps of: stacking a gate insulation film, a gate electrode and a silicide pattern on a semiconductor substrate; forming an insulation film and a thin film having different etching select ratio each other; over-etching the thin film to remove the insulation film of constant thickness; injecting n- impurity ions of low density with a tilt; injecting n+ impurity ions of high density; removing the first photosensitive film pattern and a portion of the second photosensitive film pattern; and injecting n+ impurity ions of high density and then removing the second photosensitive film pattern.
Patent KR-20000045801-A (KR)
Title: Call processing method in atm switching system
Inventor: CHO SEON HO
IPC: H04L12/28
Filed: 1998-12-30
Abstract: PURPOSE: A call processing method in the ATM(Asynchronous Transfer Mode) switching system is provided so that the switching system, receiving call setup, can generate a process during an active state and release the process during a data transmission period. CONSTITUTION: A subscriber call processing process confirms a call setup message supplied through an encoding/decoding block(S1) and generates a setup child process for a call processing(S2). After executing the call processing, the setup child process supplies the call processing message to the encoding/decoding block, and the encoding/decoding block, encoding the call processing message, transmits the encoded message to a terminal side(S3). The setup child process supplies the connection message to the encoding/decoding block, and the encoding/decoding block, encoding the connection message, transmits the encoded message to the terminal side(S4). The subscriber call processing process recognizes that the call is transferred to an active state, a speech path is set up between terminals and data are exchanged(S5), and releases the setup child process(S6).
Patent KR-20000046036-A (KR)
Title: Apparatus for estimating channel of wireless communication system and control method therefor
Inventor: BAE SANG MIN
IPC: H04B7/24
Filed: 1998-12-31
Abstract: PURPOSE: An apparatus for estimating a channel of a wireless communication system and control method therefor is provided to enhance a reliability of a recovery data by adaptively estimating a channel characteristic and compensating an optimum channel. CONSTITUTION: A complex inverse diffuser(20) has multipliers(22,24,26,28) for multiplying an in-phase signal(I) and a quadri-phase signal(Q) by an I-PN code and a Q-PN code, an adder(30) for adding outputs of multiplies(22,24), and an adder(34) for adding outputs of multipliers(26,28). First and second integrators(34,36) integrate inverse-diffused signals during a predetermined time and provide in-phase and quadri-phase pilot signals having a channel characteristic which is remained after a user data component is removed to first and second adaptive filters(37,38) and one side of multipliers(40,42).
Patent KR-19990036032-A (KR)
Title: 엔도테린 수용체 길항제
IPC: A61P9/00
Filed: 1996-08-02
Abstract: 신규한 피롤, 피라졸 및 트리아졸, 이들 화합물을 함유하는 제약학적 조성물 및 엔도테린 수용체 길항제로서의 이들의 용도가 서술된다.
Patent KR-19990036253-A (KR)
Title: 탄소질 물질내의 부산물 함량 감소 방법 및 장치
IPC: B01J8/06
Filed: 1996-07-17
Abstract: 본 발명은 탄소질 물질을 처리하여 이로부터 부산물을 제거하기 위한 각종 장치 및 방법에 관한 것이다.   더욱 구체적으로 말해서, 본 발명은 불활성 가스를 진공하에 탄소질 물질 중으로 주입하거나, 진공을 통제된 방식으로 적용하거나 적용하지 않고 증기를 탄소질 물질 중으로 주입하여 탄소질 물질의 충진물을 더욱 일관되게 처리함에 의한 탄소질 물질의 처리방법에 관한 것이다.
Patent KR-19990067434-A (KR)
Title: 효과적인 측벽의 레이저 스트리핑을 위한 경사 빔 회전 공정 및장치
IPC: G03F7/42
Filed: 1996-11-04
Abstract: 처리될 표면의 평면과 관련하여 각 α로서 표면에 레이저빔 투사를 제공하는 것과 상기 각 α>0 이며 주기적인 스위칭 또는 점차적으로 빔 투사 평면의 방위각이 변하는 것으로 구성된 스트리핑될 표면의 측벽으로부터 코팅물질의 실질적으로 완전한 그리고 가속된 제거를 수행하기 위한 공정 및 장치.
Patent KR-19990071550-A (KR)
IPC: A61P9/00
Filed: 1996-11-11
Abstract: Compounds of formula (I) wherein R is an alkyl, aryl or arylalkyl group wherein the aryl is phenyl naphthyl or heterocycle; R1 and R2, the same or different, are hydrogen atoms or alkyl groups; R3 is an aryl or arylalkyl group wherein the aryl is as above; R4 is a heterocycle optionally substituted with a heterocycle or phenyl, or it is a phenyl group substituted with a heterocycle (R4 is not imidazole or indole); X is a bond or -OCONH or -CONH- group, processes for their preparation and pharmaceutical compositions thereof, are described. The compounds of formula (I) are endowed with a dual ACE-inhibitory and NEP-inhibitory activity and are useful in the treatment of cardiovascular disease.
Patent KR-19990071706-A (KR)
IPC: C12Q1/70
Filed: 1996-11-27
Abstract: The invention concerns a method for the detection of telomerase activity wherein(a) a sample to be tested is provided,(b) a first primer suitable as a telomerase substrate and nucleoside triphosphates are added and the reaction mixture is incubated under conditions under which a primer extension by the telomerase can take place,(c) an amplification of the extension product produced by the telomerase is carried out,(d) the amplification product produced in step (c) is immobilized on a solid phase and(e) the immobilized amplification product is detected qualitatively or/and quantitatively. Furthermore the invention concerns a suitable reagent kit for carrying out the method.
Patent KR-19990087132-A (KR)
Title: 헤어 스타일링을 위한 장치
IPC: A45D20/12
Filed: 1997-12-08
Abstract: 헤어 스타일링을 위한 장치는 이동 캐리어(10, 11), 이동 캐리어(10, 11)로부터 돌출된 긴 헤어 가이드(12, 13, 14)와, 뜨거운 공기의 관통을 허용하는 통로(15)를 포함한다.  통로(15) 및 캐리어(10, 11)는 캐리어로부터 돌출된 헤어 가이드(12, 13, 14)를 구비한 캐리어(10, 11)가 제 1 방향으로 피벗 이동하는 방식으로 캐리어(10, 11)의 위치에 따라 배출 방향으로 흐르도록 응용된다.  사용할 때 이것은 헤어가 헤어를 통과하는 헤어 가이드에 의해 방출되어 다시 엉키는 것을 방지한다.  헤어 스타일은 제어하기가 보다 좋고 빗질과 브러싱이 덜 필요하다.
Patent KR-19990087285-A (KR)
Title: 착색 금속성 도료 조성물 및 도장물
IPC: C09D5/36
Filed: 1997-02-10
Abstract: 의장성이 우수하고 관찰 각도를 달리함에 따라 색상의 변화가 생기는 착색 금속성 도막을 가진 착색 금속성 도료의 생성은 특수 광휘재를 배합하지 않고 통상의 값싼 안료를 사용하여 형성될 수 있다. 
     본 발명의 도료 조성물은 
     (A) 피막 형성 결합제 100 중량부 당, 
     (B) 금속 분말 0.1 내지 15 중량부, 
     (C) 프탈로시아닌계, 페릴렌계, 인단트론계, 아조메틴계, 벤즈이미다졸론계, 퀴나크리돈계, 안트라퀴논계, 디케토피롤로피롤계 및 디옥사진계의 착색 안료로 구성되는 군으로부터 선택된 1차 입자 크기 0.01 내지 0.2 ㎛의 제1 착색 안료 0.1 내지 10 중량부, 및 
     (D) 디케토피롤로피롤계, 퀴나크리돈계, 피라졸론계, 나프톨 AS계, 산화철계 및 복합 금속 산화물계 착색 안료로 구성되는 군으로부터 선택된 1차 입자 크기 0.1 내지 2 ㎛의 제2 착색 안료 0.5 내지 50 중량부를 함유하는 도료 조성물로서, 안료 (C)의 1차 입자 크기가 안료 (D)의 1차 입자 크기에 비해 더 작고, 안료 (C) 및 안료 (D)가 보색 관계에 있는 것을 특징으로 한다.
Patent KR-20000050650-A (KR)
Inventor: YUN TAK HYEON
IPC: H01L21/336
Filed: 1999-01-13
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to improve a characteristic by making a step difference of a first gate better. CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a buffer oxidation layer and a nitride layer on a semiconductor substrate, etching a part of the buffer oxidation layer and the nitride layer through a photolithography, and forming a trench by etching the semiconductor substrate to a constant depth; filling up the trench for planarization, and protruding the oxidation layer filled up in the trench by eliminating the nitride layer and buffer oxidation layer out of the surface of the semiconductor substrate; forming an insulation layer on the entire structure, and forming a sidewall of the oxidation layer much protruded than the surface of the semiconductor substrate by selectively etching the insulation layer; forming a gate oxidation layer on the semiconductor substrate, evaporating a lower conductive layer on the gate oxidation layer and oxidation layer, and planarizing to expose the oxidation layer; forming a upper conductive layer and a cap insulation layer on the lower conductive layer and exposed oxidation layer; and patterning the cap insulation layer, the upper conductive layer through a photolithography process using a first gate mask, the lower conductive layer and the gate oxidation layer, and forming a first gate having a stack of a gate oxidation layer, a lower conductive layer, a upper conductive layer and a cap insulation layer on the semiconductor substrate while a first gate having a stack of a upper conductive layer and a cap insulation layer is separately formed on an oxidation layer.
Patent KR-19990087853-A (KR)
Title: 가변지연회로
IPC: H03K5/135
Filed: 1999-01-28
Abstract: 디지탈회로를 사용해서 클럭신호나 데이타신호에 있어서 원하는 타이밍을 얻기 위한 가변지연회로에 관한 것으로서, 높은 지연시간 분해능과 양호한 직선성을 갖는 가변지연회로를 그 회로구성 및 소자배치 레이아웃의 개선에 의해 실시해서 이루어지는 가변지연회로를 제공하기 위해서, 여러개의 가변지연게이트를 직렬 접속해서 이루어지는 가변지연회로에 있어서, 직렬접속된 가변지연게이트중 배선용량에 의한 출력용량이 큰 가변지연게이트의 출력단에 각 가변지연게이트에 있어서의 출력용량을 균등화하는 출력용량 조정소자를 마련하고, 직렬 접속된 가변지연게이트중 배선용량에 의한 입력용량이 큰 가변지연게이트의 입력단에 각 가변지연게이트에 있어서의 입력용량을 균등화하는 입력용량 조정소자를 마련하는 구성으로 하였다. 
     이것에 의해, 각 가변지연게이트의 출력용량을 일정하게 할 수 있어 가변지연회로의 지연시간분해능의 직선성을 향상시킬 수 있다는 등의 효과가 있다.
Patent KR-20000056224-A (KR)
Inventor: CHAE SEONG SOO
IPC: F01N1/08
Filed: 1999-02-18
Abstract: PURPOSE: A valve apparatus for muffler is provided to achieve an improved ride comfort and customer satisfaction for vehicle while reducing overall exhaust noise of the vehicle. CONSTITUTION: A valve apparatus for muffler having a case, a plurality of partitions vertically arranged inside the case, the case having at a portion thereof an inlet pipe and at the other portion thereof an outlet pipe, and a flow pipe for passage of exhaust gas flowed through the inlet pipe toward the outlet pipe and which is installed inside the case, wherein a first valve body(22) and a second valve body(32) which variably open/close according to a back pressure of exhaust gas are arranged at upper and lower portions of the pipe(3), respectively, to be resiliently supported by first and second springs(24, 34), respectively. The first valve body(22) opens when the exhaust gas has an intermediate pressure while the second valve body(32) opens when the exhaust gas has a high pressure.