Patent SG-11201810486V-A (SG)
Title: High resistivity single crystal silicon ingot and wafer having improved mechanical strength
Inventor: BASAK SOUBIR
IPC: C30B15/30
Filed: 2017-06-06
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 11111111111111111111111111111111111111111111111111111111111111111111111111111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\"\"1 WO 2017/214084 Al 14 December 2017 (14.12.2017) WIP0 I PCT (51) (21) (22) (25) Filing Language: (26) (30) (71) (72) (71) (72) International Patent Classification: Pearl Drive, St. Peters, Missouri 63376 (US). LEE, Hyung- C30B 29/06 (2006.01) C30B 15/30 (2006.01) MM; 501 Pearl Drive, St. Peters, Missouri 63376 (US). International Application Number: KIM, ByungChun; 501 Pearl Drive, St. Peters, Missouri PCT/US2017/036061 63376 (US). FALSTER, Robert J.; 501 Pearl Drive, St. Peters, Missouri 63376 (US). International Filing Date: (74) Agent: SCHUTH, Richard A. et al.; Armstrong Teasdale 06 June 2017 (06.06.2017) LLP, 7700 Forsyth Blvd., Suite 1800, St. Louis, Missouri English 63105 (US). Publication Language: English (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, Priority Data: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, 62/347,143 08 June 2016 (08.06.2016) US CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, 62/347,145 08 June 2016 (08.06.2016) US DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, Applicant: SUNEDISON SEMICONDUCTOR LIMIT- HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, ED [SG/SG]; 9 Battery Road, #15-01, Straits Trading KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, Building, Singapore 049910 (SG). MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, Inventor; and PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, Applicant: BASAK, Soubir [US/US]; 501 Pearl Drive, St. TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. Peters, Missouri 63376 (US). (84) Designated States (unless otherwise indicated, for every Inventors: PEIDOUS, Igor; 501 Pearl Drive, St. Peters, kind of regional protection available): ARIPO (BW, GH, Missouri 63376 (US). HUDSON, Carissima Marie; 501 = = (54) Title: HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPROVED MECHANICAL 0 comprise ei atoms/cm3, interstitial oxygen STRENGTH 50 — = = = 40 ri 1 = = = = El 11 = 30 z n 8 li 20 I D . NI VHR REFERENCE — = Ill Ge DOPED WAFER 1 = a. 7J cn I 111 i A Ge DOPED WAFER 2 = = 10 A l k 1 li st iprit _, A II Ge DOPED WAFER 3 = -20 : A method for preparing nitrogen at a concentration 0 -18 at a -16 of concentration -14 a single crystal silicon ingot at least '::-\"` TEMPERATURE -12 -10 about of less -8 lx1014 than -6 OFFSETS atoms/cm3 and/or germanium at a concentration of at least about lx1019 about -4 -2 and 6 ppma, (C) FIG. 11 a wafer sliced therefrom are provided. The ingots and wafers and a resistivity of at least about 1000 ohm cm. 1-1 7r GC © ii- ,-, ei IN I l (57) [Continued on next page] WO 2017/214084 Al MIDEDIMOMOIDEIRMEM0011010HOIRMOHEMOVOIMIE GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))