Patent SG-11201808636T-A (SG)
Title: Tsv structure planarization process and apparatus
Inventor: JIN YINUO
IPC: H01L21/768
Filed: 2016-04-07
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization MD 1101111 0 11101 0I0 11111 MEM 0 111 010 11111 001 1011 0111 00 111110 HOED International Bureau .. .... ..Yejd ..... .....:;. (10) International Publication Number (43) International Publication Date WO 2017/173613 Al 12 October 2017(12.10.2017) WIPO I PCT (51) (21) (22) (25) Filing Language: (26) Publication Language: (71) (72) International Patent Classification: (74) Agent: SHANGHAI PATENT & TRADEMARK LAW HO1L 21/768 (2006.01) OFFICE, LLC; 435 Guiping Road, Shanghai 200233 (CN). International Application Number: PCT/CN2016/078656 (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, 7 April 2016 (07.04.2016) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, English DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, English KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, Applicant: ACM RESEARCH (SHANGHAI) INC. MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, [CN/CN]; Bld. 4, No. 1690 Cailun Road, Zhangjiang PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, High-Tech Park, Shanghai 201203 (CN). SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. Inventors: MN, Yinuo; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-Tech Park, Shanghai 201203 (CN). DAI, (84) Designated States (unless otherwise indicated, for every Yingwei; Bld. 4, No. 1690 Cailun Road, Zhangjiang High- kind of regional protection available): ARIPO (BW, GH, Tech Park, Shanghai 201203 (CN). YANG, Guipu; Bld. 4, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, No. 1690 Cailun Road, Zhangjiang High-Tech Park, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Shanghai 201203 (CN). WANG, Man; Bld. 4, No. 1690 TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, Cailun Road, Zhangjiang High-Tech Park, Shanghai DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, 201203 (CN). WANG, Hui; Bld. 4, No. 1690 Cailun LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Road, Zhangjiang High-Tech Park, Shanghai 201203 SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, (CN) GW, KM, ML, MR, NE, SN, TD, TG). . Published: — with international search report (Art. 21(3)) _ TSV STRUCTURE PLANARIZATION PROCESS AND APPARATUS : A TSV structure in the substrate (101), an oxide layer (103) formed on the substrate (101), a barrier bottom and sidewall of the vias (102), a metal layer (105) formed in the vias (102) planarization process comprises: process (301); and removing metal layer residual and the barrier layer on the non (305). --- 301 303 305 includes a substrate (101), vias (102) layer (104) formed on the oxide layer and on the barrier layer (104).The TSV area of the substrate by a stress-free -recessed area by a chemical wet etch pro - (54) Title: = = = removing all metal layer deposited on a non- recessed area by a stress-free polishing process = = = = V = removing metal layer residual on the non- recessed area by a metal layer chemical wet etch process = = — = V removing barrier layer on the non-recessed area by a barrier layer chemical wet etch process 1-1 en 11 IN en ,-1 (57) ::::; formed N (103), 0 structure polishing .,. cess (303) Fig 3 planarization process and apparatus. The TSV structure removing all metal layer formed on a non-recessed