baber/WOPTO huggingface dataset:
Patent TW-333446-B (TW)
Title: Impression system for implants with an impression cap
Inventor: FRANZ SUTTER
IPC: A61C13/003
Filed: 1997-01-31
Granted: 1998-06-11
Abstract: An impression system comprising an impression cap (4,104,204,304,404) for transferring the end of an implant, protruding from a human tissue structure, of an implant (1) which is fitted into the human body, including possible superstructures, to a master cast, hereinafter referred to as the situation (X), in which, (a) at the very top, the implant (1) ends with an implant shoulder (11) on the implant head (10), and (b) superstructures (2, 302, 402) with different abutments (21, 321, 421) projecting above the implant shoulder (11) can be fitted into the implant head (10), (c) at the very bottom, the impression cap (4,104,204,304,404) ends with a cap shoulder (41,141,241,341,441) which is complementary to the implant shoulder (11) and which sits radially at least partially on the implant shoulder (11); which is characterized in that: (a) a slide sleeve (3,103,203,303,403) is fitted into the inside of the impression cap (4,104,204,304,404) and determines the relative position of the outside flank of the abutment (21,321,421) in relation to the implant shoulder (11), in order to transfer the original situation (X) fixed in the obtained impression (AD) analogously to the master cast.
Patent TW-413909-B (TW)
Title: Manufacturing method of very high speed pseudo-dynamic non-volatile flash memory
Inventor: LIN RUEI-LIN
IPC: H01L21/8242
Filed: 1997-02-03
Granted: 2000-12-01
Abstract: A manufacturing method of very high speed pseudo-dynamic non-volatile flash memory is disclosed. The feature of this memory is a capacitor coupled with the local bit-line. The capacitor is used for charging and discharging. The memory operates as a DRAM during charge state and as a flash memory during discharge state. As a result, the storage and access speed of this type memory is faster than the conventional flash memory.
Patent TW-316250-B (TW)
Title: The manufacturing method for metallization plastic grain for shielding electromagnetic wave
Inventor: TZENG CHING-SHYONG
IPC: B29B11/16
Filed: 1997-02-03
Granted: 1997-09-21
Abstract: A manufacturing method of metallization plastic grain for shielding electromagnetic wave. It includes following steps: (a) Form plastic core-bar by pultrusion thermo-plastic resin; (b) Curl at least a layer conductive metal strip on plastic core-bar along longitude axis to form metal curling bar; (c) Stick at least one conductive metal thin-rib on metal curling bar in longitude direction to form multi-layer metallization bar; (d) Cut multi-layer metallization bar into several plastic grains to produce the product that can shield EMI.
Patent TW-360501-B (TW)
Title: Dietetically balanced milk product
Inventor: FLEITH MATHILDE
IPC: A23L33/00
Filed: 1997-06-04
Granted: 1999-06-11
Abstract: Dietetically balanced milk product of which the lipid part comprises a mixture of milk fats and oils selected so as to observe an equilibrium between all the lipid families able to provide essential fatty acids in physiologically optimum proportions and to regulate the metabolism of fatty acids. This product which has low atherogenicity and thrombogenicity indices is particularly suitable for the prevention of cardiovascular risks.
Patent TW-442473-B (TW)
Title: Heterocyclylmethylamino derivatives of cyclobutene-3,4-diones
Inventor: HERBST DAVID RICHARD
IPC: A61K31/4406
Filed: 1997-06-11
Granted: 2001-06-23
Abstract: The compounds of formula, wherein: R1 is hydrogen or alkyl of 1 to 6 carbon atoms; R2 is alkyl of 1 to 8 carbon atoms which could be substituted by phenyl; R3 is hydrogen; A is non-substituted pyridyl, or benzofuranyl which could be substituted by R4, R5, R6, wherein R4 is nitro or cyano; R5 is hydrogen; R6 is fluoro, chloro, bromo, or iodo; or a pharmaceutically acceptable salt thereof, relax smooth muscles. The compounds of the formula, wherein R1 and R2 are, independently, hydrogen, straight chain alkyl, branched chain alkyl, cycloalkyl, bicycloalkyl or aralkyl, wherein the aromatic moiety of the aralkyl group may be optionally substituted with one to three straight chain alkyl, halogen, nitro, cyano, alkoxy, alkoxycarbonyl, trifluoromethyl or trifluoromethoxy groups; R3 is hydrogen, formyl, alkanoyl, alkenoyl, alkylsulfonyl, aroyl, arylalkenoyl, arylsulfonyl, arylalkanoyl or arylalkylsulfonyl; A is selected from the group consisting of: formulas, wherein n is 0 or 1; R4, R5 and R6 are, independently, cyano, nitro, amino, alkyl, perfluoroalkyl, alkoxy, perfluoroalkoxy, alkylamino, dialkylamino, sulfamyl, alkylsulfonamido, arylsulfonamido, alkylcarboxamido, arylcarboxamido, alkanoyl, alkylsulfonyl, perfluoroalkylsulfonyl, arylsulfonyl, chloro, bromo, fluoro, iodo, 1-imidazolyl, carboxyl or hydrogen; or a pharmaceutically acceptable salt thereof, relax smooth muscles.
Patent TW-355874-B (TW)
Title: AC/DC power converter device
Inventor: CARCIA SUAREZ OSCAR
IPC: H02M7/06
Filed: 1997-06-21
Granted: 1999-04-11
Abstract: An AC/DC power converter device comprising a full-wave rectifier (R) the output of which is applied to a direct current module (AC) which has two outputs; the main output is connected to the load via a capacitor (C1) which transfers a first power level (P1), and the auxiliary output is formed by a capacitor (C2) and a direct current converter (DC) which stores a second power (P2) and transfers it to the load during the full cycle of the input power wave (PE); the second power level (P2) is continuously topping up the first power level (P1).
Patent TW-379283-B (TW)
Title: Portable steady-state heat conductivity meter for insulation materials
Inventor: TSAI YOU-SHI
IPC: G01K17/06
Filed: 1997-07-21
Granted: 2000-01-11
Abstract: The invention makes use of an electrically controlled constant high temperature area on one side of the insulation material and geometrically controlled mainly longitudinal heat flux to achieve the effect of one dimensional heat transfer. When the temperatures on both sides of the insulation material under testing come to a steady state, the temperatures, the thickness of the material, and the heat flow, are measured and used to calculate the heat conductivity. The difference between the ideal two-dimensional heat transfer and the one-dimensional heat transfer is corrected by the results of a theoretical model. The apparatus is tested using a material with known heat conductivity. The result of the test agrees with the expected value very well. The electronic control can be designed using a digital circuit that consists mainly of a single-chip microcomputer to perform PWM (pulse width modulation) temperature control, temperature measurement, parameter input and coefficient calculation, and display functions.
Patent TW-442552-B (TW)
Title: Hot melt adhesives
Inventor: ALBRECHT STEVEN W
IPC: C09J123/00
Filed: 1997-07-21
Granted: 2001-06-23
Abstract: Disclosed are hot melt adhesives comprising at least one first homogenous linear or substantially linear ethylene polymer having a particular density and melt viscosity at 350 DEG F (177 DEG C), and an optional wax and tackifier. In particular, disclosed is a hot melt adhesive characterized by: (a) at least one homogeneous linear or substantially linear interpolymer of ethylene with at least one C3-C20 a-olefin interpolymer having a density from 0.850 g/cm<SP>3</SP> to 0.895 g/cm<SP>3</SP>; and (b) optionally at least one tackifying resin; and (c) optionally at least one wax wherein the hot melt adhesive has a viscosity of less than about 5000 cps (50 grams/(cm.second)) at 150 DEG C. Preferred hot melt adhesives for use in adhering cardboard or paperboard are disclosed, as well as the resultant adhered products. Also disclosed is a dual reactor process for the preparation of the inventive hot melt adhesives.
Patent TW-400248-B (TW)
Title: Mixing device
Inventor: ISHII HIROSHIGE
IPC: B01F29/83
Filed: 1997-08-01
Granted: 2000-08-01
Abstract: This invention provides a mixing device. It can simplify the mechanism which makes the vessel holder of the mixing vessel revolving and rotating around the axis tilted towards the revolving axis at the same time. The mixing device can enhance its durability and effectively agitate and deform materials to be mixed. Its features are as follows: a vessel holder 9 for holding the mixing vessel 8 is provided on the centrifugal side of the revolving body 7 revolving around the revolving axis 6; the vessel holder 9 can rotate around a axis tilted towards the revolving axis; a rotating pulley 14 is provided in the co-axial state; a rotating force exerting pulley 18 with a diameter of the size of the rotating pulley is provided on the revolving body at opposite side of the vessel holder 9 relative to the revolving axis; and a guide pulley 20, which can bend the circular belt 19 hanging between the two pulleys, is provided between the rotating force exerting pulley and the rotating pulley.
Patent TW-346668-B (TW)
Title: Contact formation for a semiconductor device
Inventor: KAERIYAMA HISAYUKI
IPC: H01L21/3065
Filed: 1997-10-01
Granted: 1998-12-01
Abstract: A method of forming a contact hole through an insulating layer, which comprises the following steps: forming a first mask layer over the insulating layer; patterning and etching the first mask layer to expose a portion of the insulating layer; etching the exposed portion of the insulating layer to form a contact hole having a bottom surface and an inner side surface; forming a sidewall mask layer along the inner surface of the contact hole; etching the bottom surface of the contact hole using the sidewall mask layer as an etch mask to form a contact hole; and filling the contact hole with a conductive material.
Patent TW-359896-B (TW)
Title: Dual deposition methods for forming contact metallizations, capacitors, and memory devices
Inventor: KIM JIN-WON
IPC: H01L21/28
Filed: 1997-10-29
Granted: 1999-06-01
Abstract: A method for forming a dynamic random access memory device includes the step of forming a memory cell access transistor of a semiconductor substrate wherein the memory cell access transistor includes a source/drain region at a surface of the semiconductor substrate. An insulating layer is formed on the semiconductor substrate and on the memory cell access transistor wherein the insulating layer has a contact hole therein exposing a portion of the source/drain region of the substrate. A first conductive layer is chemical vapor deposited on the exposed portion of the source/drain region of the substrate, and a second conductive layer is physical vapor deposited on the first conductive layer opposite the substrate. A dielectric layer is formed on the second conductive layer opposite the substrate, and a third conductive layer is formed on the dielectric layer opposite the substrate.
Patent TW-363246-B (TW)
Title: Manufacturing method of integrated circuit component
Inventor: SUN SHR-WEI
IPC: H01L21/76
Filed: 1997-11-22
Granted: 1999-07-01
Abstract: A kind of manufacturing method of integrated circuit component which employs the metal implantation method forming the gates of CMOS FET components and automatically align the tunnel region of FET and selectively forming the barrier adjustment and punchthrough resistant. First, by the field isolation structure on the substrate to from the activate component region and forming a thick dielectric layer on which forms the trench. The trench will be proceeded with automatically alignment adjustment and punchthrough resistant implantation, then the trench will be filled up with the polycrystalline silicon layer with cruds so as to define a polycrystalline silicon gate. Last, by removing the dielectric layer on side of polycrystalline silicon gate, the FET component is formed.
Patent TW-360820-B (TW)
Title: Heat sink, in particular for electronic components
Inventor: CAPRIZ CESARE
IPC: H01L23/40
Filed: 1997-12-04
Granted: 1999-06-11
Abstract: A heat sink (2) for electronic components (1) comprises: a base portion (3) fitted with means (4) for coupling with a fixed support plane (5) of an apparatus; a plane surface (6), positioned in proximity to the base portion (3), in contact with a corresponding surface (7) of the electric component (1), and an additional heat dissipation portion (8) comprising a prolongation (9) of the base portion (3) from which extend a plurality of fins (10); an elastically yielding element (11) acts between the heat sink (2) and the electronic component (1) to obtain a stable positioning of the surface (7) of the component itself to the related plane surface (6) of the heat sink (2); a pair of fins (10a, 10b), contiguous to each other, presents a respective inner wall (12, 13), such walls being opposite one to the other and so shaped as to define a compartment (14) for stably housing a portion (15) of the elastically yielding element (11).
Patent TW-513391-B (TW)
Title: Novel 1,3-diphenylpropane derivatives having inhibitory activity against tyrosinase and process for preparation thereof
Inventor: RHEE YOUNG-HO
IPC: C07D311/00
Filed: 1998-03-05
Granted: 2002-12-11
Abstract: The present invention relates to a novel 1,3-diphenylpropane derivative having an inhibitory activity against tyrosinase represented by the following formula (I) and process for preparation thereof: in which - - represents double or single bond, R1 represents hydrogen or a straight and saturated C1-C6alkyl, R2 represents a straight and saturated C1-C5alkyl or a straight and saturated C1-C5alkoxyalkyl, or R1 and R2 together represent, wherein R7 and R8, independently of one another represent a straight and saturated C1-C5alkyl, R3 represents hydrogen or a straight and saturated C1-C7alkyl, R4 represents hydrogen, hydroxy, or oxo, and R5 and R6 independently of one another represent hydrogen or a straight and saturated C1-C5alkyl.
Patent TW-395128-B (TW)
Title: Program selection system for a digital television receiver
Inventor: LOWNES GEORGE
IPC: H03J1/00
Filed: 1998-03-31
Granted: 2000-06-21
Abstract: A program selection system for a consumer digital television receiver includes a numeric keypad and scrolling keys for selecting a channel through which a multi-program bit-stream is received. The numeric keypad and the scrolling keys may also be used to select an individual program from the multi-program bit-stream. In one embodiment of the invention, the numeric keypad is used first to select a channel and then to select a program within the channel. According to another embodiment of the invention, the numeric keypad is used to select the channel and another key is used to step through the programs that are contained in the multi-program stream that is carried by the channel. In a third embodiment, scrolling keys are used to select the next channel or the next program within the channel depending on whether the currently selected program is the last program in the bit-stream that is carried by the channel.
Patent TW-466255-B (TW)
Title: Photoactivatable nitrogen-contained bases on Α-amino alkenes
Inventor: TURNER SEAN COLM
IPC: C08G18/40
Filed: 1998-04-07
Granted: 2001-12-01
Abstract: The invention relates to organic compounds having a molecular weight of less than 1000 comprising at least one structural unit of the formula (I), in which R1 is an aromatic or heteroaromatic radical which is capable of absorbing light in the wavelength range from 200 to 650 nm and in doing so brings about cleavage of the adjacent carbon-nitrogen bond. The compounds represent photoinitiators for base-catalysable reactions. Other subjects of the invention are base-polymerizable or crosslinkable compositions comprising compounds having a structural unit of the formula I, a method of implementing photochemically induced, base-catalysed reactions, and the use of the compounds as photoinitiators for base-catalysed reactions.
Patent TW-388196-B (TW)
Title: Film spacer for manufacturing film circuit board
Inventor: MANO TAKUMI
IPC: H05K3/00
Filed: 1998-05-29
Granted: 2000-04-21
Abstract: The objective of the present invention is to provide a film spacer enabling the manufacture of a film circuit board superior in alignment of an IC chip with inner leads at bonding by avoiding deformation of the circuit board due to strain or warp thereof and avoiding a nonuniform thermal distribution at heating. The present invention is characterized in that a polyesterimide(PEI), polyimide(PI) or polyethylene terephthalate(PET) spacer film has two arrays of semi-circular, wavy or rectangular protrusions alternately protruding to the front and back surfaces at both ends of the spacer sides and one or more arrays of similarly shaped protrusions alternately protruding to the front and back surfaces inside the array in the width direction, thus totaling to three or more arrays of the protrusions alternately protruding to the front and back surfaces.
Patent TW-375774-B (TW)
Title: Process for manufacturing metal gate
Inventor: Dong ming-zong
IPC: H01L21/28
Filed: 1998-06-16
Granted: 1999-12-01
Abstract: A process of manufacturing metal gate, whereon a P-type substrate, a pad oxide and silicon nitride layer are formed and part of said silicon nitride layer is etched to define a drift region; subsequently, a N-type drift region and P-type field region are formed, where two adjacent N-type drift regions lie between two P-type drift regions. Next, a field oxide layer is formed on the surface of N-type drift region and P-type field region, and residual silicon nitride layer and pad oxide layer are removed to define a source/drain region and a gate region, in which the gate region is situated between two N-type drift regions, and source/drain regions lie between N-type drift region and P-type field region. Next, double diffused drain is formed inside source/drain region, and a gate oxide layer is formed on the surface of gate region. Finally, a metal window is formed on the surface of gate oxide layer and source/drain region.
Patent TW-434263-B (TW)
Title: Graft copolymer of syndiotactic styrene/para-alkylstyrene copolymer
Inventor: LI JI-RAN
IPC: C08F12/00
Filed: 1998-06-23
Granted: 2001-05-16
Abstract: The present invention provides a graft copolymer of a syndiotactic styrene/para-alkylstyrene copolymer, having the formula of wherein R1 and R2 are independently selected from the group consisting of hydrogen, alkyl, primary and secondary haloalkyl; X is a functional group selected from a group containing halogen, oxygen, sulfur, silicon, nitrogen, carbon, phosphorus, and mixtures thereof; Y is a polymer moiety; a ranges from 10 to 30000; b ranges from 0 to 30000; c ranges from 0 to 30000; and d ranges from 1 to 30000. In comparison with a syndiotactic styrene polymer, the compatibility of the graft copolymer of syndiotactic styrene/para-alkylstyrene copolymer of the present invention with other polymers is improved. Also, the graft copolymer of the present invention can serve as a compatibilizer for a polymer blend.
Patent TW-396595-B (TW)
Title: Semiconductor device
Inventor: MORIKAWA YOSHINAO
IPC: H01L21/822
Filed: 1998-07-15
Granted: 2000-07-01
Abstract: A semiconductor device includes a first circuit; a second circuit; and a plurality of data paths for transmitting a signal between the first circuit and the second circuit. Signal delay time periods when transmitting a signal through the plurality of data paths are srbstantially equal with each other.
Patent TW-377412-B (TW)
Title: Method of performing serial communication
Inventor: KE MING-ZHI
IPC: G06F13/32
Filed: 1998-09-15
Granted: 1999-12-21
Abstract: This invention is a method of performing serial communication that employs the interrupt service routine. By knowing the volume status of data transmitting between memory units of the sending side and memory units of the receiving side, the service routine can determine whether the data volume in buffer memory of the sending side is below the threshold, or the data volume of the memory unit of the receiving side is over the threshold. Therefor operation can be efficiently switched between the two sides to avoid the previous problem of inept switching to sleep mode resulting in too long or too short a wait.
Patent TW-396517-B (TW)
Title: A manufacturing method of Metal-Oxide Semiconductor devices
Inventor: JAN TIAN-HAU
IPC: H01L21/76
Filed: 1998-09-18
Granted: 2000-07-01
Abstract: A manufacturing method of Metal-Oxide Semiconductor devices, comprising: First, a substrate with two gates is provided. Then, a first spacer at the side-wall of the gate is formed. After that, a second spacer is formed at the side-wall of the gate. By the invention, two spacers with different widths are formed on a substrate to satisfy the requirement of different spacer widths for various transistors.
Patent TW-405304-B (TW)
Title: Electronic device including apparatus and method for routing flexible circuit conductors
Inventor: MURRAY MICHAEL P
IPC: H01R35/02
Filed: 1998-09-21
Granted: 2000-09-11
Abstract: An electronic device such as a radiotelephone (100) includes a bottom housing (108) defining a first hinge aperture (2207) and a slot (2208) adjacent the first hinge aperture. A top housing (102) defines a second hinge aperture (2223) having an inner rotation surface (2226). A shaft (2210) extends from the first housing at the first hinge aperture. The shaft is sized for insertion in the second hinge aperture and terminates in a bearing surface (2216), the inner rotation surface pivoting on the bearing surface as the second housing moves in relation to the first housing. The shaft and the bearing surface both define a shaft slot (2218) aligned with the slot in the first housing for routing a flexible circuit element (216) between the first housing and the second housing.
Patent TW-414965-B (TW)
Title: Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
Inventor: ZHANG LIMING
IPC: H01L21/321
Filed: 1998-10-21
Granted: 2000-12-11
Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
Patent TW-422922-B (TW)
Title: Laminated composite frangible cover for missile launch canister
Inventor: KAM TAI-YAN
IPC: F41F5/00
Filed: 1999-01-11
Granted: 2001-02-21
Abstract: A laminated composite frangible cover for missile launch canister consists of several laminated composite plates with rectangular edge lugs, a frame and several laminated composite sheets. The components of the cover are bonded or patched together in a predetermined pattern. The allowable external pressure of the cover is higher than its allowable internal pressure. The cover is strong enough to resist the attack of foreign objects and preserve the inert gas stored in the canister. When subjected to the impact of an impulsive pressure of a certain magnitude, the frangile cover will burst into several pieces in a predetermined pattern and fly away from the opening of the canister.