baber/WOPTO huggingface dataset:
Patent JP-H0529404-A (JP)
Title: Tool for bonding of al wiring lead
Inventor: NAKAMURA KYOTARO
IPC: H01L21/607
Filed: 1991-07-19
Abstract: PURPOSE:To make a disconnection hard to occur even when an ultrasonic bonding operation is executed to an Al wiring lead by a method wherein the tip part of the title tool is formed to be a round shape without an acute-angle part and a recessed part is formed on its inside. CONSTITUTION:The tip part of a tool 1 is formed to be a round shape; a hole 1a is formed in nearly its central part. It is desirable that the diameter of the tool 1 is smaller than the width of an Al wiring lead 2 and than an Al electrode pad 3 for an LSI chip. In order to increase the close contact power of the Al wiring lead 2 with the electrode pad 3, it is preferable that the area of the tip part of the tool is large. However, when the area is larger than required, the deformation of its peripheral part becomes large and the reliability of a bonding operation is lowered. Consequently, it is required to decide the size of the hole 1a formed in the central part of the tool so that the deformation is reduced to a minimum while the close contact power of the Al wiring lead 2 is being increased. The diameter of the tool, the condition of the bonding operation as well as the width and the thickness of the Al wiring lead 2 are interrelated. Thereby, a disconnection is hard to occur.
Patent JP-H1125144-A (JP)
Title: Designing method for multilayer printed wiring board
Inventor: KAMIYA KAZUNORI
IPC: G06F17/50
Filed: 1997-07-04
Abstract: PROBLEM TO BE SOLVED: To prevent a floating island from being generated by a link with a copper sampler by determining the layout of a thermal land from the number of black dots, which are arranged at the prescribed positions of the thermal land divided into four parts, in contact with a copper sampling part on the layout. SOLUTION: When connecting an inner layer copper foil part 14 with a through hole 13, black dots are arranged three by three on respective thermal lands 3a... peripherally divided into four parts. At the time of design, the position relation between the arranged black dots and the copper sampling part other than the thermal land is checked and when no black dot is in contact with a peripheral copper sampling part 15, the thermal lands 3a are arranged like a figure (a). When there is any black dot in contact with the peripheral copper sampling part, on the other hand, the number of such contacting black dots is confirmed and when more than two of three black dots are in contact with the peripheral copper sampling part 15, the thermal land is not arranged like a figure (b-1).  Besides, when the number of black dots in contact is less than 1, the thermal lands are ordinarily arranged like a figure (c-1).
Patent JP-H0344564-A (JP)
Title: Method and device for measuring photoelectric field
Inventor: KOZUKA YOSHINARI
IPC: G01R15/24
Filed: 1989-07-12
Abstract: PURPOSE:To compensate a temperature characteristic of a Pockels element and to enable execution of accurate measurement by making a prescribed direct-current electric field act, together with an alternating-current electric field act, together with an alternating-current electric field, on the element and by determining the electric field and a voltage from the relative ratio between angular frequency signals being the same and twice as large as the alternating-current electric field. CONSTITUTION:A light emitted from a light-emitting unit 15 enters a sensor head unit 2 and passes through a Pockels element 4 provided between a polarizer 6 and an analyzer 8. In the element 4, the light is subjected to modulation by an alternating- current voltage V to be measured and a direct-current voltage VDC and then enters a light-receiving unit 24, and an electric signal is supplied therefrom to an identical angular frequency component detector 26 and a double angular frequency component detector 28. A division circuit 30 subjects signal components from the detectors 26 and 28 to division and outputs a division signal ET (=E2w/Ew), wherefrom the voltage V is measured. By selecting the voltage VDC satisfying ET = V/4VDC, the signal ET is made free from an effect due to the temperature of the element 4 and others and thus accurate measurement can be attained in a stable manner.
Patent JP-S6424491-A (JP)
Title: Printed board
Inventor: TAKAHASHI TAKEO
IPC: H05K3/28
Filed: 1987-07-21
Abstract: PURPOSE:To make a wiring pattern section small in area so as not only to increase a component mounting in density but also enable a assured soldering of a SMD to a land by a method wherein a through-hole, filled with solder, of which one side is covered and the other side is adhered to a SMD is provided in a surface mounting device (SMD) land. CONSTITUTION:For instance, wiring patterns 104 and 105 and film resists 105 and 205 are formed on a front and a rear face of a substrate 1 respectively, where the wiring pattern 104 on the front side and the pattern 204 on the rear side are connected with each other through holes 8 and 9. And, SMD lands 103a and 103b are provided on the front face of the substrate 1. The through- hole 8 connecting the SMD land 103a with the wiring pattern 204 on the rear side is positioned just under the SMD land 103a, and its inside is filled with solder and its rear entrance is covered with the film resist 205. With this structure, a cream solder 7 is prevented from flowing into the through-hole 8, so that a SMD 2 is soldered in a excellent condition.
Patent JP-H0228624-A (JP)
Title: Thin film transistor
Inventor: MISHIMA YASUYOSHI
IPC: G02F1/136
Filed: 1988-07-18
Abstract: PURPOSE:To obtain a thin film transistor (TFT) which has a large operation margin for an Ioff current by laminating an impurity-added type hydrogenated amorphous silicon layer which has a large energy band gap as a contact layer and an ohmic electrode film and forming the laminated film as a source electrode and a drain electrode. CONSTITUTION:A semiconductor layer 24 is formed of an ia-Si:H layer in a specific pattern on an insulating film 23. A carbon-added hydrogenated amorphous silicon layer (N<+>a-SiC:H) to which N type impurities of phosphorus or arsenic are added or nitrogen-added hydrogenated amorphous silicon layer (N<+>a-SiN:H) layer to which N type impurities are added is formed thereupon as the contact layer 25. On this contact layer 25, the ohmic electrode 26 formed of a Ti film or Cr film is laminated. Then the lamination structure of the contact layer 25 and ohmic electrode 26 is patterned by using a photoresist film as a mask to form the source electrode 27 and drain electrode 28. Consequently, the margin of the Ioff (drain) current value can be increased.
Patent JP-S57103045-A (JP)
Title: Sensor for oxygen
Inventor: OGURA YOSHITSUGU
IPC: G01N27/407
Filed: 1980-12-19
Abstract: PURPOSE:To obtain a highly accurate sensor for an internal-combustion engine capable of operating at low temperature and having superior durability, by forming a metallic electrode on the inner and outer surface of an oxygen ion conductive solid electrolyte body and forming a catalyst layer containing W on the electrode of the side which contacts with waste gas. CONSTITUTION:An electrode 2b made of Pt is formed on the inner surface of a solid electrolyte body 2a made of stabilized ZrO2 added Y2O3 and an electrode 2c is formed on the outer surface of said body 2a in the same way and then, a porous layer 2d made of MgO.Al2O3 is formed on the surface of the electrode 2c by a plasma melt-spraying method. A cell 2 is immersed in a slurrified catalyst prepared by an aqueous solution containing W together with Rh, Pd and alumina sol, activated alumina, and a catalyst layer 2e is formed on the layer 2d by calcination after drying. A protective cover 5 is attached to the cell 2 by a holder 1. Starting temperature of operation is lowered by adding W to the lyer 2e and its capacity is hardly deteriorated and also, the accuracy and durability are improved.
Patent JP-S6073353-A (JP)
Title: Chemical fet sensor
Inventor: TSUKADA KEIJI
IPC: A61B5/1495
Filed: 1983-09-30
Abstract: PURPOSE:To enable the temp. compensation of output and the amplification of the change in weak interface potential, by forming MOSFET and a chemical FET sensor to the same semiconductor substrate so as to change the dimensions of the gate parts thereof and making the operational characteristics of both FETs same. CONSTITUTION:A P type diffusion layer is formed to a same P type Si-substrate while an oxide film 3 is thickly formed only to the separation part of said substrate to form MOSFET and chemical FET (shown in the left side of the drawing) in a separated state. Both FETs use poly-Si as the n<+> diffusion layer 2 of source drain. In the relation of the electrostatic capacity C1, the channel length L and the channel width W per the unit area of the insulating film, which is formed of a combination of an oxide film 5, an Si3N4 film 7 and a Ta2O5 film 8, of the gate part of chemical FET and the electrostatic capacity Cox, the channel length (l) and the channel width W per the unit area of the oxide film 5 interposed between the gate electrode 6 of MOSFET and the substrate, W and L are changed so as to make the values of C1W/L and CoxW/L almost equal. By this method, a high accuracy chemical FET sensor is obtained.
Patent JP-H053356-A (JP)
Title: Optical fiber amplifier
Inventor: SAITO TOMOKI
IPC: H01S3/091
Filed: 1991-06-24
Abstract: PURPOSE:To provide an optical fiber amplifier having a high signal gain, high saturated output, and low-noise characteristics. CONSTITUTION:Signal light is made incident to an Er-added single mode optical fiber 1 after the signal light is synthesized with excited-light emitted from an exciting light source 4 by means of an optical multiplexer/demultiplexer 21 so that the signal light and excited light can be propagated through an optical fiber in the same direction and passed through the optical isolator 11. The signal light amplified in the optical fiber 1 and the excited light which is not absorbed into the fiber 1 have signal light wavelength band and excited light wavelength band passing characteristics and the center wavelength of the two kinds of light coincide with the wavelength of the signal light in the signal light wavelength band. Therefore, the two kinds of light pass through another optical isolator 12 and made incident to and amplified in an Er-added optical fiber 12 after passing through an optical filter 3 using an interference fringe filter having a band width of 3nm. The output of the fiber 2 is outputted after the output is separated from the excited light by means of an optical multiplexer/demultiplexer 22.
Patent JP-H05346777-A (JP)
Title: Method and device for processing character style
Inventor: TSUKAMOTO TETSUYA
IPC: G09G5/24
Filed: 1992-06-15
Abstract: PURPOSE:To combine plural styles according to request and to properly correspond to many character codes. CONSTITUTION:By a main style pickup part 15, style data corresponding to the character code of a specified character to be processed, that is, the character constituting a character line inputted by an input device 11 or the character line secified properly by group designation, etc., in image data while editing in an editing process part 17 is picked up from the style data of a main style registered by a main style register part 13 and imparted to the editing process part 17. By an auxiliary style pickup part 16, the style data corresponding to the character code whose no style data exists in the style data registered as the main style is picked up from the style data of an auxiliary style registered by an auxiliary style register part 14 and imparted to the editing process part 17.
Patent JP-S6252085-A (JP)
Inventor: MURATA MASAYOSHI
IPC: C10L1/32
Filed: 1985-08-16
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0346261-A (JP)
Title: Semiconductor device and stress control thereof
Inventor: MIURA HIDEO
IPC: H01L23/14
Filed: 1989-07-14
Abstract: PURPOSE:To enable inner stress which occurs in a semiconductor device to be optionally controlled by a method wherein a support board is made to have a function to give tensile stress to a semiconductor member. CONSTITUTION:A semiconductor substrate 3 is formed on a piezoelectric element 1, the piezoelectric element 1 is distorted when a voltage is applied between electrode terminals 2 and 2', the distortion of the element 1 occurs in a direction parallel with the direction in which the electrodes 2 and 2' are arranged. The MOS transistor of the simplest structure is formed inside the semiconductor substrate 3, and a current can be made to flow between a source electrode 6 and a drain electrode 7 through the control of voltage applied to a gate electrode 5. As the current concerned flows from a source 8 toward a drain 9 under a gate oxide film 20, the directions of the current and the distortion are coincident with each other. As mentioned above, a semiconductor substrate can be distorted by the use of a piezoelectric element. By this setup, a semiconductor device can be optionally controlled in inner stress state.
Patent JP-S6335261-A (JP)
Inventor: FUJIOKA TAKAHARU
IPC: A61M3/00
Filed: 1986-07-30
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0468508-A (JP)
Title: Current lead for superconductive device
Inventor: KIMURA SHINICHI
IPC: H01F6/00
Filed: 1990-07-10
Abstract: PURPOSE:To reduce penerated heat into a liquid helium container without setting any limitation in the arrangement in a superconductive device by providing a high temperature superconductive material not in a gas pipe but directly in vacuum. CONSTITUTION:A liquid nitrogen container 10 is arranged beside a liquid helium container 2. A gas pipe which is a flow path of gas helium is not provided and a lead part 9b using a high temperature superconductive material is arranged on its side in vacuum. A low temperature end of a high temperature superconductive material is connected to a superconductive coil side terminal 6 passing through a sidewall of the liquid helium container 2 and a high temperature end is connected to an intermediate connection part 11 passing through a sidewall of a liquid nitrogen container 10. Since a low temperature end of a lead part 9b using a high temperature superconductive material is in liquid helium 3 and a high temperature end thereof is in liquid nitrogen 8, it becomes liquid nitrogen temperature or lower due to conduction even if in vacuum, not in a flow path of gas helium, thereby keeping a superconductive state. Furthermore, since there is no gas pipe which is communicated as far as a normal temperature space, heat penetration due to heat conduction does not also exist.
Patent JP-S6075392-A (JP)
Title: Treatment of organic waste water
Inventor: KOIKE SOUICHIROU
IPC: C02F1/54
Filed: 1983-09-30
Abstract: PURPOSE:To reduce the amt. of a flocculant to be injected, and to improve the dehydrating property of sludge by using an appropriate metallic salt of organic acid as the flocculant in the flocculating separation of organic waste water. CONSTITUTION:A metallic salt of organic acid is used as a flocculant in the flocculating separation in the treatment of organic waste water using a combination of a biological treatment and the flocculating separation. One or more kinds among Fe<2+>, Fe<3+>, Al<3+>, Ca<2+>, and Mg<2+> is firstly selected, and the salt of said metallic ions combined with biologically decomposable carboxylic acids such as formic acid, acetic acid, oxalic acid, propionic acid, succinic acid, and malic acid is selected as the flocculant. Ferric acetate is used, for example. When the metallic salt of organic acid is added at the stage prior to a biological treatment stage or at the biological treatment stage, metallic ions and colloid are gradually formed in the process of the decomposition and adsorption of the organic acid group along with the substrate in the waste water. And the chromaticity components, COD components, phosphoric acid, etc. are chemically removed by the flocculating sedimentation.
Patent JP-2001012558-A (JP)
Title: Toothed belt, toothed belt transmission device, and office appliance
Inventor: OCHIAI MASAKI
IPC: F16G1/28
Filed: 1999-06-25
Abstract: PROBLEM TO BE SOLVED: To increase the printing accuracy and image quality of an office appliance by suppressing, as far as possible, the nonuniformness of the speed of a toothed belt of a toothed belt transmission device. SOLUTION: This toothed belt comprises a tooth side face parts 13, 13 formed of projected arc faces provided continuously with tooth root parts 12, 12 and symmetrically with respect to a lateral centerline C2 and a tooth top part 16. The tooth top part 16 comprises a flat surface part 18 formed of one generally flat surface connecting both are face parts 17, 17 to each other formed of the arc faces provided continuously with both tooth side face parts 13, 13 and symmetrically with respect to a lateral centerline C2. For a deddendum W on a belt land line LL, 0.3 W pressure angle θB at a reference position D, apart 0.3 W from the land line LL to a tooth height direction on the tooth side face part 15 of a belt tooth part 13 is set to 26 deg. to 39 deg..  When meshing, the side face of the belt tooth part 13 is brought into contact lately with the side face of a pulley tooth groove part, and the vertical component of a reaction produced when the belt tooth part is slid into the pulley tooth groove part is reduced.
Patent JP-H0471131-A (JP)
Title: Buffer type gas blast circuit breaker
Inventor: HIOKI ISAO
IPC: H01H33/42
Filed: 1990-07-10
Abstract: PURPOSE:To improve the cutoff performance of a large current and an advance small current by arranging a sway lever and at least an idler lever on a connection section between an action device and a moving electrode section, and setting the action angle of the moving electrode section side to 1.5 times or above the action angle of the opposite side. CONSTITUTION:The ratio F/T between the driving force F of a moving electrode section and the driving torque T of a sway lever 6 is expressed by the equation I, where theta is the action rotation angle of the sway lever 6, (x) is the moving distance in the vertical direction of a seal rod 10, i.e., the moving electrode section, and eta is the transfer efficiency of force at a connection section between the sway lever 6 and the seal rod 10 and includes the friction loss of pin sections 7, 9. F/T is increased as the change quantity of the moving distance in the vertical direction of the moving electrode section with respect to the change quantity of the action rotation angle theta of the sway lever 6 is decreased. The action rotation angle fl of the sway lever 6 is divided into two by the horizontal line passing its rotation center so that theta1<=1.5theta2, where theta1 is the action rotation angle of the upper side, i.e., the moving electrode section side, and theta2 is the action rotation angle of the lower side.
Patent JP-H0229773-A (JP)
Title: Production of hologram
Inventor: IKEDA NORIKO
IPC: G03H1/02
Filed: 1988-07-20
Abstract: PURPOSE:To enhance transparency and environmental resistance and to allow the production of a hologram under visible rays by coating a substrate with a hologram photosensitive material and irradiating the entire surface of the substrate with UV rays, then exposing with electron rays, thereby recording interference fringe patterns on the surface. CONSTITUTION:The entire surface of the substrate on which the recording material is coated is previously irradiated with the UV rays to crosslink a high polymer which is an essential material; thereafter, the surface is subjected to a decoloring treatment to elute the org. halogen compd. of the crosslinking agent and the dye of a sensitizer, by which the dry plate is formed. This dry plate is nonphotosensitive to visible rays. The dry plate is irradiated with electron rays by an electron ray exposing device along the desired interference fringe patterns previously obtd. by calculation. The interference fringes are thus recorded by utilizing the decrease in the mol. wt. of the recording material.
Patent JP-H04321221-A (JP)
Title: Diffusion of semiconductor wafer
Inventor: IWAMOTO KENJI
IPC: H01L21/22
Filed: 1991-04-20
Abstract: PURPOSE:To uniformly diffuse impurities without reducing the charge amount of Si wafers per batch even when the interval between rears on the wafers is expanded by a method wherein a double-groove type boat is used and faces on which mirror surfaces are formed on two Si wafers forming one set are made close. CONSTITUTION:In a first process, faces (surfaces) 2a, 2b on which mirror surfaces are formed on two Si wafers 2, 3 forming one set are made close (the interval between the surfaces: A) and the wafers are loaded on a double- groove type Si boat 54. In the same manner, individual sets of Si wafers 4 and 5, 6 and 7,... are loaded sequentially. Each interval B between rears 3b and 4b, 5b and 6b,... of the individual sets is made wider than the interval A. In this case, the relationship between the intervals A and B is A<A+B/2. In the second process, the Si boat 54 is put into a diffusion furnace 59, and a predeposition diffusion operation is executed at 1000 to 1200 deg.C for 0.5 to 3.0 hours. Thereby, it is possible to reduce an irregularity in P2O5 on the surface if the Si wafers at conventional charge amounts of wafers per batch.
Patent JP-2001004496-A (JP)
Title: Inspecting method of pressure-receiving member and apparatus therefor
Inventor: MORINO TAKESHI
IPC: G01M99/00
Filed: 1999-06-25
Abstract: PROBLEM TO BE SOLVED: To provide an inspecting method of a pressure receiving member and an apparatus therefor which enable pressing of the pressure receiving member at a prescribed pressure without being affected by the pressure fluctuation of a pressure fluid and also accurate control of a pressing force even when the pressure is small and thus enable correct execution of inspection. SOLUTION: When a support member 114 is displaced downward by making a cylinder 100 drive, a pressing member 126 comes into contact with a switch 12, so as to give it the weight thereof, and the switch 12 is pressed with a pressure corresponding to this weight. On the other hand, the support member 114 works only to support a shaft 128 so that it extends in the vertical direction, and the pressure and weight of the support member 114 are not given to the switch 12. The switch 12 is pressed by the pressing member 126 and moves to close and a portable telephone 10 outputs to a determining device 18 a signal showing that the switch 12 has moved to close. Therefore the determining device 18 can detect that the switch 12 operates normally.
Patent JP-H0931033-A (JP)
Title: 6-dimethylaminomethyl-1-phenylcyclohexane compound as medically effective substance
Inventor: HERUMUUTO HAINRITSUHI BUTSUSHI
IPC: C07C217/54
Filed: 1996-07-10
Abstract: PROBLEM TO BE SOLVED: To obtain the subject new compound, having excellent alganesthetic actions without causing adverse effects and useful as an analgesic agent.  
     SOLUTION: This 6-dimethylaminomethyl-1-phenyl-cylclohexane compound of formula I [R 1  is H, OH, Cl, or F; R 2  and R 3  are each H, a 1-4C alkyl, benzyl, CF 3 , OH, OCH 2 -C 6 H 5 , etc., with the proviso that at least one of R 2  and R 3  is H; R 4  is H, CH 3  PO(O4C alkyl) 2 , etc., with the proviso that R 4  dose not denote CH 3  when both R 2  and R 3  are H and R 1  denotes H, OH or Cl or R 4  does not denote H when R 1  denotes OH], e.g. (-)-(1S,2S)-3-(2- dimethylaminomethyl-1-fluoro-cyclohexyl)-phenol hydrochloride. The compound of formula I (the group R 1  is OH) is obtained by reacting, e.g. a β- dimethylaminoketone of formula II with an organometallic compound of formula III (Z is MgCl, MgBr, Mgl or Li). 
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