baber/WOPTO huggingface dataset:
Patent KR-20000059782-A (KR)
Inventor: KIM YEONG ROK
IPC: F02B67/00
Filed: 1999-03-09
Abstract: PURPOSE: An engine assembly for bus is provided to accomplish an improved productivity and durability while reducing the coupling procedures of the engine assembly. CONSTITUTION: An engine assembly comprises a vertically elongated main body(111); an engine coupling unit where a protuberance(112) for coupling of an engine is projected from a lower end of the main body of the assembly, the protuberance having at a center thereof a plurality of first holes for mounting of the engine and at both sides thereof a plurality of second holes for coupling of a cylinder block bracket(10), the second holes being communicated to the other side of the main body of the assembly; an alternator coupling unit where a coupling portion(121) is projected from an upper end of the main body of the assembly to be slanted at a predetermined angle, the coupling portion having at an upper end thereof a coupling hole for coupling of an alternator(16); and a cooling hose coupling unit(13) having a penetrating hole formed at an intermediate portion of the main body of the assembly, a connecting portion(132) formed at a portion of the main body for coupling a cooling water input path of the engine, and a connecting port(134) formed at the other portion of the main body of the assembly so as to be coupled with a cooling water hose drawn off from a radiator, the connecting port being bolt-coupled by a cover(133).
Patent KR-19990077707-A (KR)
Title: 실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼
IPC: C30B29/06
Filed: 1999-03-09
Abstract: 본 발명은 쵸크라스키법에 의해 질소를 도프한 실리콘 단결정봉을 육성하고, 이 단결정봉을 절단(slice)하여 실리콘 단결정 웨이퍼로 가공한 후, 상기 실리콘 단결정 웨이퍼를 열처리하여 웨이퍼 표면의 질소를 외측으로 확산시키는 실리콘 단결정 웨이퍼의 제조방법 및 이 방법으로 제조된 실리콘 단결정 웨이퍼에 관한 것이다. 실리콘 단결정 웨이퍼를 제조하는 방법은, 쵸크라스키법에 의해 질소를 도프한 실리콘 단결정봉을 질소농도, 산소농도 및 냉각속도를 조정하면서 육성한 다음, 이 실리콘 단결정봉을 절단하여 웨이퍼로 제조하는 것이다. 쵸크라스키법에 의해 질소를 도프하여 육성된 실리콘 단결정봉으로부터 얻은 실리콘 웨이퍼는, 상기 실리콘 웨이퍼의 게터링 열처리후 또는 디바이스 제조 열처리후의 무결함층 깊이가 2~ 12㎛이고, 그리고 게터링 열처리후 또는 디바이스 제조 열처리후의 내부 미소 결함 밀도가 1×10 8 ~2×10 10 개/㎤ 이다. 웨이퍼 표면의 결정결함의 생성이 저감되고 벌크부에서의 산소석출이 촉진되는 CZ실리콘 웨이퍼가 제공된다. 무결함층의 깊이와 내부미소결함밀도의 제어범위를 확대할 수 있다.
Patent KR-19990077815-A (KR)
Title: 낚시용 릴
IPC: A01K89/015
Filed: 1999-03-12
Abstract: 본 발명은 낚시용 릴에 관한 것으로, 릴 전체의 소형화를 도모하여 양호한 파지성을 확보하고, 아울러 외관의 향상을 도모한 낚시용 릴을 제공하는 것을 목적으로 한다. 
     청구항 1에 관한 발명은, 낚시할 때의 상황을 계측하는 계측장치와, 이 계측장치의 계측값을 표시하는 표시기를 구비한 낚시용 릴에 있어서, 상기 계측수단을 구성하는 전자부품을 장착한 회로기판을 표시기와 중합하지 않고 릴 본체에 이격 배치한 것을 특징으로 한다. 그리고, 청구항 2에 관한 발명은, 청구항 1에 기재된 낚시용 릴에 있어서, 상기 표시기를 릴 본체의 상부에 배치함과 동시에, 상기 회로기판을 릴 본체의 측부에 장착한 것을 특징으로 하고, 청구항 3에 관한 발명은 상기 표시기와 회로기판을 릴 본체의 상부에 병렬설치한 것을 특징으로 한다.
Patent KR-20000061322-A (KR)
Inventor: LEE SANG DON
IPC: H01L21/336
Filed: 1999-03-25
Abstract: PURPOSE: A method for manufacturing a metal oxide semiconductor(MOS) transistor is provided to protect a gate electrode and a reoxidation layer from a halo ion injection process by evaporation the reoxidation layer to evaporate a nitride layer on the entire surface of the reoxidation layer. CONSTITUTION: A method for manufacturing a metal oxide semiconductor(MOS) transistor comprises the steps of: forming a gate on a substrate(1), and forming a reoxidation layer(6) on a side surface of the gate; evaporating a nitride layer(11) on the entire surface of the reoxidation layer for protecting the reoxidation layer and gate; forming a halo blocking region in a side substrate region on the gate by an incline ion injection process, and forming low density source and drain(8) under a side substrate of the gate through an impurity ion injection process; and forming a gate sidewall(9) on a side surface of the gate, and forming high density source and drain(10) under a side surface substrate of the gate sidewall through an impurity ion injection process.
Patent KR-19990078314-A (KR)
Title: 반도체 장치 및 그 제조방법
IPC: H01L27/108
Filed: 1999-03-26
Abstract: 반도체기판상에 형성된 자동중첩측정용 외측 박스마크로서, 비트라인으로 형성된 두개의 평행 라인들상에 워드라인에 의해 형성된 두개의 수직라인을 배선함으로써 정(井)자 형상이 형성된다.  이에 의해, 하나의 박스마크를 사용하여 워드라인방향으로의 미스얼라인값과 비트라인방향의 미스얼라인값이 동시에 측정될 수 있다.  워드라인과 비트라인으로 형성된 정(井)자 형상 구조의 배선사이의 용량콘택형성시, 자동중첩측정용 박스마크를 사용함으로서 수행된다.  그 결과, X방향(워드라인)과 Y방향(비트라인)으로의 미스얼라인값을 측정하고 그 측정결과를 분석하는 데 요구되는 시간을 단축시키는 것이 가능해진다.
Patent KR-19990083549-A (KR)
Title: 촬상장치와회전드럼간의거리조절방법
IPC: B41J2/46
Filed: 1999-04-28
Abstract: 촬상 장치들의 기계적 장착 상태를 변경하지 않고도 각각의 촬상 장치 어레이와 반대편에 배치된 회전 드럼의 표면간의 거리의 최적화가 달성된다.  각각의 장치에 대해, 레코딩 구조물로부터의 최적 거리는 상당히 적절한 포커싱에 대응하는 이 최적 거리에서 이루어지며, 최대 에너지 밀도가 드럼 상의 레코딩 매체에 전달된다.  이 최적화를 달성하기 위해, 장치-대-드럼간의 실제 거리를 변경하지 않고, 그 대신, 방출원(예를 들어, 광섬유 케이블의 끝면)과 어셈블리간의 간격을 조절하여 장치와 드럼간의 광학적 경로를 변경한다.  이것은 포커싱 위치를 변경하므로 장치 자체를 이동한 것과 동일한 효과를 가진다.  본 발명은 서로 다른 장치-대-드럼간 거리에서 인가되는 촬상 영역 시퀀스에 의해 최적의 장치-대-드럼간 거리를 결정하기 위한 방법도 역시 제공한다.
Patent KR-19990083594-A (KR)
Title: 광변조장치
IPC: G09G3/36
Filed: 1999-04-29
Abstract: 강유전성 액정 표시(FLCD) 패널이 인접 또는 연속된 화소들이 서로 다른 레벨의 회색 크기를 디스플레이하도록 어드레스될 때, 관측자는 두 회색 레벨들간의 천이 과정에서 투과 레벨에 있어서의 인지되는 에러에 의해 야기되는 의사-에지 영향을 받게 된다.  이러한 인지되는 에러를 줄이기 위하여, 패널은 예를 들어 회색 레벨 "3"과 "4"사이와 같은 두 회색 레벨간의 천이 과정에서 어드레싱 구조의 최상위 비트가 유사 회색 레벨(예를 들어, 1/2 레벨)을 포함(incorporate)하도록 어드레스된다.  이는 천이 과정에서 인지되는 에러를 보상하는 어떠한 특별한 측정이 취해지지 않았을 때 얻어질 수 있는 값보다도 상대 회색 레벨에서 더 낮은 절대값의 에러를 나타내는 인지도 레벨을 얻을 수 있게 한다.  이러한 보상 기술은 공간 디더(SD)뿐 아니라 시간 디더(TD)를 사용하는 어드레싱 구조에도 적용될 수 있다.
Patent KR-19990088409-A (KR)
IPC: B22D18/04
Filed: 1999-05-19
Abstract: The casting unit with two manipulators (46) for handling the molds has both manipulators rotatable independently of one another about a common axis (20), and are provided with separate rotational drives (30, 32).
Patent KR-20000005852-A (KR)
Inventor: NAKAMURA TAKASHI
IPC: G02F1/1368
Filed: 1999-06-02
Abstract: PURPOSE: Liquid crystal display is provided to prevent a crosstalk. CONSTITUTION: In the liquid crystal display, using a reflective pixel electrode and a insulating layer as a intermedium, signal line and adjacent signal line is placed oppositely. A area of the signal line which is opposite to the reflective pixel electrode is similar to a area of the signal line which is opposite to the pixel electrode. As a result, that signal potential of the first signal line affect reflective pixel electrode through the capacitive coupling is similar that signal potential of the second signal line affect reflective pixel electrode through the capacitive coupling.
Patent KR-20010001244-A (KR)
Inventor: PARK JU DEOK
IPC: H04N5/60
Filed: 1999-06-02
Abstract: PURPOSE: An apparatus for modulating a music broadcasting output on TV is provided to control a tone color of a music sound according to a self tone color when the music sound is different from the self tone color, so that a user can easily practice songs. CONSTITUTION: An analog to digital(A/D) converter(80) modulates a voice signal detected from an intermediate frequency(IF) signal into a digital signal. A memory(90) stores the converted voice signal. A voice component detector(100) detects a voice component signal from voice data outputted from the memory(90). A voice signal separator(110) separates the detected voice component signal from other sound component signals. A voice signal storage(120) stores the separated voice component signal. A sound storage(130) stores the separated sound component signal. A frequency synthesizer(150) synthesizes frequencies to modulate the sound component signal. A frequency generator(140) oscillates a frequency used for the frequency modulating, and supplies the oscillated frequency. A digital to analog(D/A) converter(160) modulates a synthesized signal of the frequency synthesizer(150) into an analog signal, and inputs the analog signal to an audio processor(50).
Patent KR-20010002304-A (KR)
Inventor: KIM JONG UK
IPC: G06F9/00
Filed: 1999-06-14
Abstract: PURPOSE: A PC security system using an IC card(Integrated Card) is provided to improve the securing efficiency of the security device without recording a password in a PC. CONSTITUTION: A PC security system comprises an access control file encoder(200) and an IC card(300). The access control file encoder(200) codes a file and stores in a PC by connecting with an external interface(100) of the PC. The IC card(300) stores many groups of passwords for coding. An access control of the access control file encoder is released with the password in the IC card. The file inside the PC is transmitted to the access control file encoder and coded after deciding a security rank with the password. The file is transmitted to the PC and stored again. Thereby, the securing efficiency is improved without storing the password in the PC.
Patent KR-20000006225-A (KR)
Inventor: BIO CRISTIAN
IPC: F16D69/00
Filed: 1999-06-16
Abstract: PURPOSE: A dry-typed friction clutch liner crown is provided to mix and insert aqueous cement. CONSTITUTION: A dry-type chafing clutch linear crown has the steps of:forming yarn including metal yarn and inorganic fiber like glass fiber and yarn composed of polyacrylonitrile or its derivative fiber; putting the yarn into cement to impregnate with cement and drying the yarn; forming a blank of chafing brown by distributing the impregnated yarn in the projected part between the outer diameter and inner diameter to produce a clutch crown.
Patent KR-20010004341-A (KR)
Inventor: LEE IN NO
IPC: H01L27/108
Filed: 1999-06-28
Abstract: PURPOSE: A polysilicon interconnection forming method of a semiconductor device is to prevent a void from generating by forming a profile of a gate electrode including a polysilicon in the form of positive by a regulation of a polysilicon deposition temperature. CONSTITUTION: The method for forming a polysilicon interconnection of a semiconductor device comprises the steps of: depositing a polysilicon film on a silicon substrate under the temperature of 450-550 deg. C; selectively etching the polysilicon film; and forming the side wall of the polysilicon film patterned by the etching in the form of positive. The polysilicon film is a gate electrode, a bit line, or a capacitor electrode. The polysilicon film is deposited in a furnace or a CVD(chemical vapor deposition) equipment. The method for manufacturing a semiconductor device comprises the steps of: depositing a polysilicon film(3) on a silicon substrate(1) under the temperature of 450-550 deg. C; forming a tungsten silicide film(4) and a mask insulating film(5) on the polysilicon film; selectively etching the mask insulating film and then forming a mask insulating film pattern; and etching the tungsten silicide film and the polysilicon film by using the mask insulating film pattern as an etching barrier.
Patent KR-20010004513-A (KR)
Inventor: KIM DAE JUNG
IPC: H04M3/00
Filed: 1999-06-29
Abstract: PURPOSE: A transaction managing table of a message processing task in a switching system is provided to make a transaction behavior table, a transaction state managing table, and a transaction ID for allocating table manage transactions according to IDs, and to divide each transaction into many transaction states and sub transactions and to manage the divided transactions with transaction state units, so that the message processing task may simultaneously process many messages without time delay. CONSTITUTION: A transaction behavior table is composed of a transaction type definition part and a transaction state/operation definition part. The transaction type definition part stores transaction type IDs, transaction message IDs, a first transaction state number, and an operation function routing indicator relating to the first transaction state, according to transaction types, respectively. The transaction state/operation definition part stores transaction state numbers, acknowledge message IDs, time-out message IDs, an operation function routine indicator and a time-out operation function routine indicator, according to transaction states, respectively. A transaction state managing table is allocated by corresponding to inputted transaction messages. The inputted transaction messages are composed of transaction IDs which are transaction identifiers, transaction type IDs corresponding to the transaction messages, present transaction state numbers, timer IDs and transaction state number indicators. The transaction IDs are recorded in each entry of a transaction ID allocating table. Values of a transaction ID canceling index and a transaction ID generating index are controlled in a mathematical formula5(Transaction ID release index value = transaction ID release index value ++ %(K+1) : K which is larger than 1 is the entry number of transaction ID allocation table) and a formula6(Transaction ID allocation index value = transaction ID allocation index value ++ %(K+1) : K which is larger than 1 is the entry number of transaction ID allocation table), respectively, after performing transaction ID canceling/allocating operations of a task in the transaction ID allocating table.
Patent KR-20010005190-A (KR)
Inventor: CHOI SANG TAE
IPC: H01L21/3205
Filed: 1999-06-30
Abstract: PURPOSE: A method for forming a damascene structure forming a metal wiring of a semiconductor device using a chemical swelling process is provided to form simultaneously a metal contact and a metal wiring by using a chemical swelling process. CONSTITUTION: An insulating layer is formed on a semiconductor substrate. A photoresist containing H+ and a photoresist without H+ are applied sequentially on the insulating layer. A mask process is performed by using a metal contact hole and a reticle for forming a metal line pattern. A photoresist pattern is formed by exposing and developing selectively the photoresist layers. An SC-1 is coated on the insulating layer formed with the photoresist layers. The SC-1 is combined with the photoresist layer containing H+ CSP by performing a chemical swelling process. A pattern is formed by the combination process. A metal contact hole is formed by performing a dry etching process. The remaining photoresist is removed. A metal is deposited on the whole surface of the substrate to bury the metal contact hole. A metal wiring is formed by performing a chemical mechanical polishing process.
Patent KR-20010009828-A (KR)
Inventor: PARK SANG HYEOK
IPC: H01L27/108
Filed: 1999-07-14
Abstract: PURPOSE: A method for manufacturing a capacitor is provided to reduce a leakage current and increase the capacitance of a capacitor by improving an electric characteristic of a nitride layer. CONSTITUTION: A lower electrode(24) is formed on a semiconductor substrate(20). The lower electrode(24) is formed with a conductive layer. A surface of the lower electrode is processed by a plasma NH3 and a nitride layer(250) is formed therefrom. The nitride layer(250) is elaborated by performing a thermal annealing process. A dielectric layer(26) is formed on a surface of the elaborated nitride layer(250). The thermal annealing process for the dielectric layer(26) is performed. An upper electrode(27) is formed on a surface of the dielectric layer(26).
Patent KR-20010010814-A (KR)
Title: Swing type oil free compressor
Inventor: MIN BYEONG ILL
IPC: F04C29/02
Filed: 1999-07-23
Abstract: PURPOSE: A swing type oil free compressor is provided to install a cylinder unit at the upper of a driving unit by having a rotor reciprocate in the direction perpendicular to the rotational direction of a crankshaft. CONSTITUTION: A V-belt pulley(101) rotates by the external power source like a power take-off shaft of a vehicle. A crankshaft(10) rotates by the rotational force of the V-belt pulley. One end of a connecting rod(20) transferring the rotational force of the crankshaft to a drive arm is rotatably combined to a crank pin(13) of the crankshaft via a spherical bearing(30) while the other end is rotatably combined to a drive arm(40) via another spherical bearing(30'). The drive arm reciprocates in a specific angle by the rotational force of the crankshaft. A rotor(50) is perpendicularly combined to the crankshaft. Herein, a compressor of sufficient capacity is mounted in a least bottom area. The drive unit of the compressor vibrates with the cylinder unit thus a gasket at a connecting portion of the drive unit and the cylinder unit is prevented from breakage. Thereby, leakage of lubricating oil and compressed air is prevented. Further, a rotor shaft is prevented from breakage.
Patent KR-20000034891-A (KR)
Inventor: ALLAN E BILLITIZ
IPC: G06F9/445
Filed: 1999-07-26
Abstract: PURPOSE: A computer system and a method for accessing computer-readable medium are provided to enhance efficiency relative to prior art. CONSTITUTION: A computer system starts the execution of the operational S/W, forms a partition within the computer readable medium, and discriminates a logic drive related to the partition in no relation to the restart of the operational S/W. The computer system comprises an input(104) executing processes in response to commands, a display(106), a printer(108) and a computer(102). The computer is an IBM-compatible PC having an MS windows 95 operational system and connected to the input, the display and the printer. The display is a conventional CRT.
Patent KR-20010011843-A (KR)
Inventor: CHOI SEONG HWAN
IPC: G01N3/40
Filed: 1999-07-30
Abstract: PURPOSE: An apparatus for measuring hardness of field concrete is provided to accurately measure whether the concrete becomes hard suitable for upwardly moving a formation frame of a slip foam. CONSTITUTION: An apparatus for measuring hardness of field concrete includes a pressing frame part(10) formed by a push handle(120) in the upper part of a casing(110) having a space in the inside, a pressing driving part(20) having a push rod(210) elastically installed in the casing and having a driving shaft(220) mounted in the front of the casing to be rotatively moved jointly with the push rod, and a compression force measuring part(30) having a measuring plate(310) installed in the front of the casing for displaying scale and an indicator(320) mounted at the end part of the driving shaft for indicating the scale of the measuring plate.
Patent KR-20010019312-A (KR)
Inventor: PARK SEONG SEO
IPC: F02D45/00
Filed: 1999-08-26
Abstract: PURPOSE: A deciding method for the engine starting completion of an electronic control fuel injection system is provided to improve starting trouble and to enhance starting ability by accurately deciding the starting completion. CONSTITUTION: A deciding method for an engine starting completion comprises the five steps. In the first step, fuel injection amount is controlled by a predetermined control method fitted with a starting condition. In the second step, an engine RPM is detected with outputs from a crank angle sensor. The voltage of a battery is detected in the third step and the voltage increase rate of the battery is detected in the fourth step. In the fifth step, the control for the fuel injection amount stops when the voltage and the voltage increase rate of the battery are all over each reference value. Thus, an engine starting completion is accurately decided with the voltage state of the battery as well as the engine RPM.
Patent KR-20010019924-A (KR)
Inventor: BAEK GI HO
IPC: G03F7/039
Filed: 1999-08-31
Abstract: PURPOSE: A photoresist monomer compound with group generating radical by light radiation and copolymer thereof is provided to generate radical by using light, contrary to known chemical amplified resist material, and to perform cross-linkage through the connection between radicals generated one another. CONSTITUTION: A photoresist monomer compound capable to generate radicals is preferably a compound of formula 1 and a first monomer to form photoresist copolymer. The copolymer can further include a compound of formula 2 as a second monomer. The copolymer also includes maleic acid anhydride as a third monomer. The copolymer can be prepared by dissolving the first, second and third compounds in organic solvent and polymerizing the obtained solution of (a) by adding a polymerization initiator therein. The organic solvent is selected from a group consisting of cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylsulfoxide, dioxane, methylethylketone, benzene, toluene and zailene. In formula, R is H or -COOH, l represents integer number selected from 1 to 3.
Patent KR-20010025874-A (KR)
Inventor: AHN MI HYEON
IPC: H01L23/13
Filed: 1999-09-01
Abstract: PURPOSE: A semiconductor package with multi-chip is provided to execute a wire bonding without breakage of an upper chip regardless of the chip size. CONSTITUTION: An adhesive(240) is applied between bonding pads to attach a lower chip(220) on a PCB(Printed Circuit Board)(210). The lower chip(220) is attached between the bonding pads. The bonding pad is wire bound with the bonding pad on the lower chip(220) by a wire bounder(262). An epoxy filler(250) is formed in the space between the lower chip(220) and an upper chip(230) on the PCB(210). After spreading the epoxy filler(250) and the adhesive(240) on the lower chip(220), the upper chip(230) is die attached. Wire bounder connects the bonding pad of the upper chip(230) and the bonding pad of the PCB(210) using a wire(264). Encapsulation is executed to cover the upper chip(230) using an epoxy molding compound. Solder ball(280) is stuck on the solder ball pad(217) at the backside of the PCB(210).
Patent KR-20010025899-A (KR)
Inventor: LEE CHUNG JIN
IPC: C08J3/20
Filed: 1999-09-01
Abstract: PURPOSE: A method for dispersing non-dispersing filler in resin is provided by which properties of the resin are largely improved. CONSTITUTION: The method comprises steps of: (i) mixing a halogen compound such as carbon fluoride, fine powder of fluoride resin and the like and other charging materials such as glass fiber, powder of silicic acid, powder of aluminum oxide and the like with resin; and (ii) simply applying supersonic waves to the mixture of the step (i) or applying the supersonic waves and vacuum action to the mixture of the step (i) at the same time.
Patent KR-20010026737-A (KR)
Inventor: YOO IN GYEONG
IPC: H01L29/786
Filed: 1999-09-08
Abstract: PURPOSE: A ferroelectric thin film transistor infrared detector, as well as fabrication and operation methods therefor, is provided to allow control of detection sensitivity to infrared rays and to realize a high-speed response time. CONSTITUTION: In the infrared detector, a ferroelectric layer(6) is deposited on an infrared absorber(8). If necessary for better deposition of the ferroelectric layer(6), a barrier(7) may be earlier formed on the infrared absorber(8). A semiconductor thin film(2) is then formed on the ferroelectric layer(6), and conductive pads(3,3') respectively acting as a source and a drain are formed at both sides of the semiconductor thin film(2). Alternatively, the source and the drain may be formed as doped regions in the thin film(2). In addition, an insulating layer(5) is formed on a resultant structure, and metal contacts(1,1',4) are then directly and respectively connected to the source(3), the drain(3') and the thin film(2). Therefore, the ferroelectric layer(6) is used as a gate oxide to reduce a voltage drop, so that changes of polarization in the ferroelectric layer(6) by infrared rays can be exactly detected.