baber/WOPTO huggingface dataset:
Patent JP-S60140270-A (JP)
Title: Copy density controller
Inventor: ENDOU MAKOTO
IPC: G03G15/00
Filed: 1983-12-28
Abstract: PURPOSE:To adjust copy density accurately at a high speed even when the picture line part of an original is not detected by detecting the maximum and minimum values of picture density of the original and accessing a corresponding to memory stored with correction quantities according whether the original is a positive or negative image. CONSTITUTION:Pieces of maximum and minimum detection information on the image density of the original are supplied to a CPU18 through maximum and minimum sample and hold circuits 14, 15, an A/D converter 16, etc. Then, the CPU18 accesses a corresponding part of an ROM20 according to the maximum value and deviation between the maximum value and minimum value when the original is the positive or accesses a corresponding part of the ROM20 according to the minimum value and deviation when the original is the negative. Then, the CPU18 calculates and determines an adjustment quantity on the basis of a read correction quantity to control a lamp 2 for original exposure through a phase control circuit 19, and adjusts the copy density automatically and accurately at a high speed even when the density of the picture line part of the original is not detected.
Patent JP-H0294007-A (JP)
Title: Manufacture of magnetic head
Inventor: NATSUHARA YOSHINOBU
IPC: G11B5/127
Filed: 1988-09-29
Abstract: PURPOSE:To form an equal gap over the whole length of a core block by grinding the rear surface side of the magnetic gap forming surface of one side core block, and after a gap film is formed, abutting, joining and unifying with other side core block. CONSTITUTION:First, a rear surface 3' of the magnetic gap forming surface of one side core block material 1 is ground by 30 to 50mum with a vertical surface grinder. Next, when plural core block materials 11 and other side core blocks 2 are stuck to a donut-shaped surface plate 5 with wax, a desired mirror grinding is executed and they are removed from the surface plate 5, the core block materials 11 can form a recessed warp and the core block materials 2 can form the projecting warp. Thereafter, after a gap film is formed, the recess and projection of the core blocks 1 and 2 are combined, a track is abutted, lightly pressed and welded to the extent where deformation is not executed, and thus, a gap length (g) becomes equal over the whole length of the core block of the gap length (g). Thus, at the time of welding, equal pressurization can be executed with a small torque, the material layout is efficient, the defect of the gap length is reduced and workability is improved.
Patent JP-S62104125-A (JP)
Title: Selective formation of oxide film
Inventor: KATO TAKUYA
IPC: H01L21/316
Filed: 1985-10-31
Abstract: PURPOSE:To form an oxide film having few bird's beaks, by performing selective oxidation with a magnetic field being applied at an angle close to a vertical attitude with respect to the surface of a silicon substrate. CONSTITUTION:On a silicon substrate 1, a thermal oxide film 2 is formed. As an oxidation resisting film, a silicon nitride film 3 is formed on the thermal oxide film 2. Thereafter, a part of the silicon nitride film 3 is removed by patterning using photoresist, and a part of the thermal oxide film 2 is exposed. With a magnetic field being applied approximately vertically with respect to the surface of the substrate, thermal oxidation is performed, and a thermal oxide film 4 is formed. At this time, since the magnetic film is present, diffusion of oxidized species in the lateral direction (parallel direction with respect to the silicon substrate) is suppressed. Thus the thermal oxide film 4 having few bird's beaks can be obtained. Thereafter,the silicon nitride film 3 and the thermal oxide film 2 are removed. Thus, the element isolating region having few bird's beak can be formed.
Patent JP-H09203711-A (JP)
Title: Foreign matter detector for wafer with pattern
Inventor: MORISHIGE YOSHIO
IPC: G06T7/00
Filed: 1996-08-29
Abstract: PROBLEM TO BE SOLVED: To highly precisely detect a foreign matter by multiplexing a detection signal into a plurality of prescribed levels and comparing an obtained mltivalued level with a multivalued level in a similar position on an adjoining chip. SOLUTION: A pattern side conversion circuit 52a and a foreign matter side conversion circuit 52b are received data of A/D 51 respectively, the data is converted into one level out of multivalued levels of 3 bits and 8 levels so as to be multiplexed, and the 3-bit data showing one of 8 levels is formed according to levels of luminance signals. A foreign matter presence/nonpresence judgement circuit 57 compares the converted levels of the luminance signals of two reference pixels and selects the larger one. The selected reference pixel and the 3-bit data converted from an inspection pixel (S) deviated by one chip from the reference pixel are compared and when the data value of this pixel (S) is larger than the comparison data, a detection signal showing the presence of the foreign matter is emitted.
Patent JP-H0582812-A (JP)
Title: Solar cell
Inventor: OKI YOSHIMASA
IPC: H01L31/04
Filed: 1991-09-25
Abstract: PURPOSE:To make use of a light with a long wavelength, which can not be made use of with silicon alone, effectively for power generation by providing a silicon/germanium mixed layer smaller in band gap than silicon at the rear. CONSTITUTION:A crystal layer 13, which is silicon/germanium mixed crystal doped with boron or aluminum in high concentration and in which the composition ratio of germanium is 0.3 or less, is grown on one side of a p-type conductivity of silicon substrate 11 by molecular beam epitaxial growth method. Then, an n-type layer 12 is made by diffusing phosphorus in high concentration and shallow on the opposite side of the wafer. A p-side electrode 14 and a comb- shaped n-side electrode 15 are made, and those are cut in proper sizes to obtain solar cells. Thereby, a light long wavelength can be made use of for power generation, and further, this mixed crystal can have the effect as a rear electric field.
Patent JP-2000070570-A (JP)
Title: Pattern selector for embroidery sewing machine and recording medium recording program for pattern selection
Inventor: TOMITA SHINTAROU
IPC: D05B19/04
Filed: 1998-08-31
Abstract: PROBLEM TO BE SOLVED: To display pattern names accompanied with additional data in the format of a table so as to easily operate selection, to easily confirm the selected pattern name through display and to easily confirm the additional data of the selected pattern name through display. SOLUTION: By executing pattern selection control while loading a floppy disk recording plural sets of pattern name data of embroidery patterns, correspondent sewing data and additional data related to stitch formation, when displaying the pattern name on a color display 10 in the format of table, the additional data such as 'number of stitches' and 'number of colors' are displayed closely to the row direction of respective pattern names, the display area of each pattern name is made almost rectangular while being expanded in the row direction and since the pattern name accompanied with the additional data can be displayed in the format of table so as to easily operate selection, operability in the pattern selection is improved Further, the display area of a selected pattern name 'BBB' is identified and displayed while being inverted.
Patent JP-H02133520-A (JP)
Title: Production of steel for welded structure having excellent toughness
Inventor: YOSHIKAWA HIROSHI
IPC: B21B1/22
Filed: 1988-09-28
Abstract: PURPOSE:To economically produced the steel plate for welded structures having excellent toughness with good productivity by solidifying an ingot under solidification from a specific temp. in a casting mold while rolling down the ingot in the thickness direction and rolling the solidified ingot, then holding the rolling stock for a prescribed period of time at a specific temp. CONSTITUTION:The steel for welded structures is poured into the casting mold at the temp. of solidification point temp. +5 deg.C or above and the casting and solidifying thereof are started. Further, the ingot under solidification is solidified while the solidified terminal part thereof is rolled down in the thickness direction according to the rate of shrinkage on solidification by using members, such as endless belts or walking bars, which crimp and transport the ingot and substantially constitute the plane. The ingot with which the solidification is completed is then subjected to rolling at <=30% draft. The rolled plate is thereafter held for >=2 hours at 1250 deg.C. The rolled steel plate is then subjected further to the secondary rolling at <=800 deg.C and >=60% draft at need. The steel plate for welded structures having the excellent toughness of the weld heat affected zone and the low-temp. toughness of the base metal is obtd. in this way without reheating.
Patent JP-H11135894-A (JP)
Title: Semiconductor optical amplifier
Inventor: DAGENS BEATRICE
IPC: H04B10/43
Filed: 1998-08-31
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor optical amplifier applicable for manufacturing an optical signal transmitter or 'totally optical' switch and adaptable to any semiconductor amplification technology or structure, in which the saturation threshold can be increased significantly, without sacrifice the gain. SOLUTION: This semiconductor optical amplifier comprises an input coupler Kx having one input port X and q output ports B1-B4, and an output coupler Ky having q input ports C1-C4 and one output ports Y, wherein the q output ports B1-B4 of the input coupler Kx are connected via q semiconductor optical amplifiers A1-A4 having identical amplification characteristics with the q input ports C1-C4 of the output coupler Ky.
Patent JP-H0669439-A (JP)
Title: Manufacture of cmos semiconductor device
Inventor: KOMATSU MICHIO
IPC: H01L27/092
Filed: 1992-08-22
Abstract: PURPOSE:To reduce steps by decreasing a photolithography step in manufacturing a CMOS semiconductor device having a MOS type transistor of an LDD structure. CONSTITUTION:A manufacture of a CMOS semiconductor device comprises the steps of forming a gate electrode 5 and then forming a sidewall 6 on the side of the gate electrode 5, covering a part other than a transistor region of one conductive channel out of a P channel or an N channel with a mask material 7 and introducing an impurity into the transistor region and forming source and drain region layers 8, removing the gate sidewall 6 of the transistor region by an etching and then introducing the impurity and forming an LDD layer 9, covering a part other than a transistor region of the other conductive channel with a mask material 10 and introducing the impurity into the transistor region and forming source and drain region layers 11, and removing the gate sidewall 6 of the transistor region by the etching and then introducing the impurity and forming an LDD layer 12.
Patent JP-H08111508-A (JP)
Title: Static electricity discharge protective circuit for advancedsemiconductor circuit
Inventor: SUTEIIBUN HAWAADO BORUDOMAN
IPC: H03K19/003
Filed: 1995-09-25
Abstract: PROBLEM TO BE SOLVED: To perform ESD protection between a pad and each rail by constituting an ESD protection circuit, including first to third power supply rails and a pad and first to third circuit units where each is connected to the pad and to a pair of rails. SOLUTION: An ESD network includes a P<+> -diode and an n-well bias control P-channel MOSFET T17, nPn T18 between wells in horizontal direction, and an n-well diode D5 and is separated by an STI region 13. Then, the n-well bias control P-channel MOSFET T17 is arranged next to the P<+> -diode, the PnP in horizontal direction is arranged between the P<+> -diode and P<+> implantation connected to Vdd, and an n-well diode D5 is added for a negative ESD impulse for a chip substrate. Further, an n-well guard ring 12 is arranged around a self bias n-well tab and an n-well diode for ESD protection corresponding to a power supply Vdd, thus forming a bipolar nPn transistor between the wells in the horizontal direction.
Patent JP-S62106163-A (JP)
Inventor: HENRII UIRUKOTSUTO TOMEI
IPC: F16H7/12
Filed: 1985-10-31
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0693371-A (JP)
Title: Quenched and tempered high tension steel for large heat input welding excellent in site weldability and jig mark cracking resistance and its production
Inventor: MABUCHI HIDESATO
IPC: C21D8/02
Filed: 1992-09-16
Abstract: PURPOSE:To improve large heat input weldability for improving the welding efficiency of a large structure and jig mark cracking resistance in a fillet weld zone, to perfectly prevent cracking on the inside of a tank support part, and also to improve site weldability. CONSTITUTION:A steel having a composition, which contains <=0.10% C, <=0.10% Si, 0.50-2.20% Mn, <=0.015% P, 0.0008-0.0025% S, 0.010-0.10% Sol.Al, 0.50-2.50% Cu, 0.50-2.00% Ni, 0.005-0.024% Nb, 0.005-0.018% Ti, and <=0.0002% B as impurity and where (Si+Sol.Al) is regulated to <=0.13% and also Ceq and Tieq are regulated, respectively, to <=0.38% and to -0.007 to 0.005%, is provided, by which MnS can form a compound precipitate together with TiON or TiN. At the time when MnS forms a compound precipitate, successively to slight- degree deoxidation by Si at the time of tapping, perfect deoxidation is done by using Al at the time of vacuum degassing.
Patent JP-H07104413-A (JP)
Title: Silver halide photographic material and its treating method
Inventor: EZOE TOSHIHIDE
IPC: G03C5/29
Filed: 1993-10-01
Abstract: PURPOSE:To provide a silver halide photographic material for superhard gradation negative image formation which has excellent preservation performance with the lapse of time. CONSTITUTION:Silver halide photographic material contains the hydraine derivative represented by the formula R-NHNH-G-R<2> and has the film surface pH at most 5.8. R<1> represents n aliphatic group, aromatic group, or heterocyclic group, or may be substituted. G represents a -CO- group, -SO2- group, -SO- group, -COCO- group, thiocarbonyl group, iminomethylene group, or -P(O)(R<4>)- group, and R<2> represents a substituted alkyl group which is formed by substituting the carbon atom which is substituted by G by at least one electron attractive group. R<4> represents a hydrogen atom, aliphatic group, aromatic group, alcoxy group, aryloxy group, or an amino group.
Patent JP-H03135791-A (JP)
Title: Display device for sunshine time and non-sunshine time
Inventor: YAMAMOTO WATARU
IPC: G04G9/00
Filed: 1990-09-17
Abstract: PURPOSE:To save the movement and time display of a timepiece and to make at-a-glance indication of sunshine time and non-sunshine time by displaying the sunshine time and the non-sunshine time in different optical states in accordance with the data on the sunrise and sunset time intrinsic to an assigned area outputted by a circuit part. CONSTITUTION:The arithmetic value data from the data stored in arithmetic parts 16, 17 for southing, sunrise and sunset time corresponding to the assignment of the area are outputted to a display circuit part 18. The southing time and the sunshine and non-sunshine time are analogically or graphically displayed in accordance with the arithmetic value data on an analog display zone (display part) 15 provided on the outer side of a time display scale 14 along the outer edge on a dial 3. This display zone 15 is divided to 10-minute gradations to meet with a scale 14 and is made into the double structure consisting of the AM display part 15A on the outer side and the PM display part 15P on the inner side. The sunshine time and non-sunshine time are displayed in the separate display states by colors or materials which can express the plural optical states.
Patent JP-S63105199-A (JP)
Inventor: SHIMIZU HIDEO
IPC: D21H27/00
Filed: 1986-10-17
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-2000075510-A (JP)
Title: Electrophotographic photoreceptor, image forming method and image forming device
Inventor: ITAMI AKIHIKO
IPC: G03G5/05
Filed: 1998-09-01
Abstract: PROBLEM TO BE SOLVED: To obtain a high quality image by improving the wear resistance of a photosensitive layer, decreasing the deterioration of potential characteristic due to the repetition of electrostatic exposure and preventing the generation of moire based on interference fringes at the time of image forming by the irradiation with laser beam. SOLUTION: The electrophotographic photoreceptor is formed by providing the photosensitive layer 4 having a layer, which is formed by a coating liquid containing >=2 kinds of binder resins having different structural part from each other and a carrier transporting material and contains a domain in non- compatible state, on a conductive supporting body 1. And at least one or more kinds of the binder resins constituting the domain in the non-compatible state contains Si atoms in the repeating structural unit.
Patent JP-S60139593-A (JP)
Title: Control device for motor-powered sailboat
Inventor: SAWADA MASASHI
IPC: B63H9/04
Filed: 1983-12-28
Abstract: PURPOSE:To aim at improvements in propulsion power and steering performance, by making a control device so as to selectively output control signals for thrust generation or the steering of a ship to a main engine, a steering gear, a mast turning gear and a sail on-off device after receiving a detection signal out of a detecting device. CONSTITUTION:A first detecting device D1 detecting shipping thrust information and a second detecting device D2 detecting shipping steering information both are installed. In addition, there are provided with an anemoscope 11, a wind gauge 12, a sensor 13 detecting a turning angle and an unfurling angle of a sail 3, a sensor 14 detecting a steering angle and a sensor 15 detecting a main engine speed. And, furthermore, there is provided with a control device C which selectively outputs control signals for thrust generation or the steering of a ship to a main engine 6, a steering gear 7, a turning gear 5 and a hydraulic system 4, receiving each detection signal out of these sensors 11-15.
Patent JP-H04128036-A (JP)
Title: Laminated molded object
Inventor: ITO SACHIKUNI
IPC: B32B27/00
Filed: 1990-09-19
Abstract: PURPOSE:To obtain the laminated molded object excellent in durability, while the covering layer with uniform, sufficient and optional thickness may be obtained on the whole range of the laminated formed object by polymerizing, with solidification, the synthetic resin which contains a polymer and pas fluidity onto the crystalline resin or synthetic resin-base mainly by heating them in a mold. CONSTITUTION:A synthetic resin covering layer is molded by polymerizing, with solidification, under heating the synthetic resin material which contains monomer and has fluidity in a mold. Synthetic resin base is mainly made of crystalline resin or the mixture of crystalline resin with amorphous resin, whereby said resin base becomes the material excellent in chemical resistance. Further, while a decorative member or a primer is caused to intervene between the synthetic resin covering layer and the synthetic resin base, their linear expansion factors are approximated, whereby the warpage of the laminated molded object due to surrounding temperature-change or the crack and peeling of the synthetic resin covering layer are avoided.
Patent JP-H08115976-A (JP)
Title: Deposition of low dielectric film
Inventor: HASEGAWA TOSHIAKI
IPC: H01L23/522
Filed: 1994-10-13
Abstract: PURPOSE: To deposit an SiOF film having low permittivity where both the concentration of fluorine and the controllability of coverage are satisfied, while reducing contamination due to particles generated at the time of film deposition, by changing the material gas in chemical vapor phase growth. CONSTITUTION: In the method for depositing an interlayer insulating film 13 of SiOF on the surface of a substrate 11 by chemical vapor phase growth, the material gas for chemical vapor phase growth comprises a gas (SiHF gas) composed of silicon, hydrogen and fluorine molecules and a gas (oxidizing agent) composed of hydrogen and oxygen molecules, for example. Polysilane gas is employed together with the SiHF gas and oxidizing agent in order to control the content of fluorine. Chemical vapor phase growth is carried out in a chemical vapor phase growth system through thermal decomposition reaction or in a remote plasma CVD system.
Patent JP-S62106399-A (JP)
Inventor: TERADA TOMOYA
IPC: G21D3/00
Filed: 1985-11-05
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H07102225-A (JP)
Title: Adhesive for bonding electronic part
Inventor: HOZUMI YUUKO
IPC: C09J133/04
Filed: 1993-10-04
Abstract: PURPOSE:To obtain an adhesive for bonding electronic parts which facilitates repair of bonding defects and control of the amt. of the adhesive applied, is of one-pack type, and has a long pot life and a greatly improved workability. CONSTITUTION:The adhesive of one-pack type is prepd. by mixing the main component contg. a repairability improver and a thixotrpic agent with a capsulated curative obtd. by coating a monomer reactive with the main component with a resin.
Patent JP-H1158383-A (JP)
Title: Peeling method for waste plastic irregular material coated layer
Inventor: TAKASE TAKAO
IPC: B09B5/00
Filed: 1997-08-27
Abstract: PROBLEM TO BE SOLVED: To separate irregular material coated layers such as coated layers and aluminum plated layers from a thermoplastic waste material having irregular material coated layers such as coated and aluminum plated layers. SOLUTION: A waste plastic material is crushed into small lumps 9 with irregular layers, and the small lumps are introduced into a release layer 20 and agitated therein, and the small lumps are kept at the temperature slightly lower than the plastic melting temperature by utilizing friction heat generated by the mutual friction of small lumps one another, the trace amount of water to be injected and air to be force introduced, and air is exhausted through an air exhaust line 8 while agitating the small lumps 9, and the irregular materials layers to be easily released because of the high temperature are released from plastic main body sections 9a by the collision and friction of small lumps one another.
Patent JP-S63102474-A (JP)
Title: Picture signal processor
Inventor: NAKAZATO KATSUO
IPC: G06K9/38
Filed: 1986-10-17
Abstract: PURPOSE:To suppress the occurrence of a texture in the course of an error diffusing method, by changing the picture element position corresponding to a set of distributing factors to previously fixed plural unprocessed picture elements in the vicinity of a noticed picture element. CONSTITUTION:A distributing factor producing means 12 is provided with four registers 14-17 and load each of distributing factor sets KA0, KB0, KC0, and KD0 as initial values before processing picture elements. Data of the registers 14-17 are simultaneously moved to the next registers 17, 14, 15, and 16 synchronously to the synchronizing signal corresponding to the X-and Y-direction picture element processing periods from a synchronizing signal input terminal 13. These output data are outputted to an error distributing and updating means 11 as distributing factors KA-KD. When such operations are performed, the values of the factors KA, KB, KC, and KD change synchronously to the synchronizing signals in the order of KA0, KB0, KC0, and KD0, KB0, KC0, KD0, and KA0, KC0, KD0, KA0, and KB0, and KD0, KA0, KB0, and KC0, respectively.
Patent JP-H08113304-A (JP)
Title: Garbage disposal device
Inventor: SUGANUMA YASUSHI
IPC: B65F7/00
Filed: 1994-10-13
Abstract: PURPOSE: To provide a garbage disposal device the disposal time of garbage and the energy consumption of which can be reduced, and disposal of the garbage can be carried out effectively and surely. CONSTITUTION: This garbage disposal device is provided with a container 12 capable of being opened/closed, a disposal tank 16 sealedly provided in the container 12 and receiving garbage 14, and a vacuum pump 18 reducing pressure in the disposal tank 16 for removing water content from the garbage 14 in the disposal tank 16.