Patent SG-11201804657Q-A (SG)
Title: Method and apparatus for cleaning substrates using high temperature chemicals and ultrasonic device
Inventor: CHEN FUPING
IPC: F04B23/00
Filed: 2015-12-09
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau 111111111M 11111111111111111111111111111111111111111111111111111111111111R111111111111111 (10) International Publication Number WO 2017/096553 Al WIPO I PCT (43) International Publication Date 15 June 2017 (15.06.2017) (51) International Patent Classification: BOLD 19/00 (2006.01) FO4B 23/00 (2006.01) FO4B 15/04 (2006.01) B05C 5/00 (2006.01) B05C 11/10 (2006.01) BO5D 1/40 (2006.01) (21) International Application Number: PCT/CN2015/096788 (22) International Filing Date: 9 December 2015 (09.12.2015) English English Filing Language: Publication Language: (25) (26) (71) JIANG, Chaowei; Bld. 4, No. 1690 Cailun Road, Zhangji- ang High-tech Park, Shanghai 201203 (CN). DAI, Ying- wei; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). WANG, Jian; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). (74) Agent: SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC; 435 Guiping Road, Shanghai 200233 (CN). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, Applicant: ACM RESEARCH (SHANGHAI) INC. [CN/CN]; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). (72) Inventors: CHEN, Fuping; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). WANG, Hui; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). WANG, Xi; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). JIA, Shena; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). WANG, Danying; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park, Shanghai 201203 (CN). [Continued on next page] (54) Title: METHOD AND APPARATUS FOR CLEANING SUBSTRATES USING HIGH TEMPERATURE CHEMICALS AND ULTRASONIC DEVICE air exhaust Liquid out air supply 1035 1033 1037 (57) : The present invention provides a high tem- perature chemical solution supply system for cleaning sub- strates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body con- tains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjus- ted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solu- tion tank, and an outlet of the first pump connects to the buf- fer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a clean- ing chamber in which a substrate is cleaned. The present in- vention also provides an apparatus including the high tem- perature chemical solution supply system and an ultra or mega sonic device for cleaning the substrate. The present in- vention also provides methods for cleaning the substrates. 1003 Liquid in FIG 'IA W O 20 17 /09655 3 Al WO 2017/096553 Al MIDEDIM01101 DIVIIMMEN110E101MII111111111111110111111111111 TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Published: TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, with international search report (Art. 21(3)) LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).