baber/WOPTO huggingface dataset:
Patent TW-449559-B (TW)
Title: Magnetically operated bicycle antitheft device
Inventor: KITAMURA SATOSHI
IPC: E05B49/00
Filed: 1999-12-01
Granted: 2001-08-11
Abstract: An antitheft control apparatus for a bicycle includes a key and an antitheft control circuit. The key includes a key base, an enabling signal transmitter supported to the key base for transmitting a wireless enabling signal, a power signal receiver for receiving an external wireless power signal and a command signal transmitter supported to the key base for transmitting a wireless command signal, wherein the command signal transmitter is powered by the power signals received by the power signal receiver. The antitheft control circuit includes a lock control circuit for providing a lock control signal for at least one of locking and unlocking a bicycle antitheft device, a switch for selectively enabling the lock control circuit to provide the lock control signal, and a sensor for sensing the wireless enabling signal transmitted by the key. The switch is operatively coupled to the sensor for enabling the lock control circuit, in response to the enabling signal, to provide the lock control signal. The lock control circuit includes a power signal transmitter for transmitting the wireless power signal to the key and a command receiving circuit for receiving the wireless command signal transmitted by the key for commanding the lock control circuit to provide the lock control signal.
Patent TW-I239250-B (TW)
Title: Absorbent structure and method
Inventor: DUTKIEWICZ JACEK K
IPC: A61L15/60
Filed: 2000-05-31
Granted: 2005-09-11
Abstract: A composite absorbent structure and method are disclosed including providing a first wicking layer having preferred liquid transport properties in a preferred contact with a second absorbent retention layer. The composite absorbent structure of the present invention provides preferred liquid transport and liquid retention properties. The composite absorbent structure has a first wicking layer in a preferred contact with the second retention layer by a novel intimate contact means effective to achieve a Contact Intimacy Ratio providing the preferred liquid transport and liquid retention functions when the first wicking layer and the second absorbent retention layer are combined together in accordance with the present invention. In one aspect, a bonding agent is used in the present invention in combination with the first wicking layer of wettable fibers and a second retention layer of a hydrogel-forming polymeric material, preferably superabsorbent, to form a composite absorbent structure having the preferred Contact Intimacy Ratio and providing the preferred liquid transport function and the preferred liquid retention function. In one aspect, the bonding agent used in the present invention in combination with the first wicking layer and the second retention layer includes sheath/core polyethylene/polypropylene fibers. In one aspect, the bonding agent includes Danaklon sheath/core polyethylene/polypropylene fibers. In one aspect, the bonding agent includes a hydrophilic hot melt adhesive. In one aspect, the bonding agent includes a polyaminoamide epichlorohydrin wet strength resin. The composite absorbent structure and method are used in disposable absorbent products.
Patent TW-I224008-B (TW)
Title: Sensate and cosmetic compositions with a cooling effect based on isopulegol
Inventor: SUARES ALAN JOSEPH
IPC: A61K8/34
Filed: 2000-01-18
Granted: 2004-11-21
Abstract: A sensate composition is provided for imparting a long lasting cooling effect on skin. The composition is a combination of menthyl lactate, isopulegol and menthoxypropanediol, the latter providing a cooling enhancing effect. Cosmetic compositions can be prepared incorporating the sensate composition.
Patent TW-546303-B (TW)
Title: Methods of preparing optically pure sugars
Inventor: HUNG SHANG-CHENG
IPC: C07H9/04
Filed: 2000-01-27
Granted: 2003-08-11
Abstract: The invention relates to a method of preparing a compound of the following formula: wherein each of R1, R2, R3, and R4, independently, is hydrogen, alkyl, cycloalkyl, heterocycloalkyl, alkoxy, aryl, heteroaryl, aralkyl, heteroaralkyl, haloalkyl, or alkyloxyalkyl, provided that R1 and R2, optionally form a keto or, with the carbon atom to which they are attached, optionally form a cyclic moiety, and that R3 and R4, optionally form a keto or, with the carbon atom to which they are attached, optionally form a cyclic moiety.
Patent TW-446548-B (TW)
Title: Method of manufacturing a simple mirror rim
Inventor: HUANG SHU-JEN
IPC: A47G1/00
Filed: 2000-02-10
Granted: 2001-07-21
Abstract: This invention is related to a method of manufacturing a simple mirror rim, comprising the steps of: trimming and obtaining the blank material; rolling the blank material into a round rim; argon welding; roll up the edges in a mold; polishing; and obtaining the final product; wherein the rolled up metal strip is drawn, and the mirror rim is trimmed to the required length so as to complete the step of trimming and obtaining the blank material; the trimmed metal strip is rolled into a round rim, and the opposing edges of the round rim are slightly bent towards the center; the opposing ends of the roll-up metal strip are connected by argon welding prior to being placed into a lower mold of a forming mold, within the mirror rim is placed with two mirrors and a sponge body placed between the two mirrors; closing the upper mold and the lower mold so as to bend the opposing ends of the frame rim to form curved edges; and the welded locations are polished to obtain the final product.
Patent TW-493109-B (TW)
Title: Microlithography projection objective and projection exposure apparatus
Inventor: DINGER UDO
IPC: G03F7/20
Filed: 2000-03-10
Granted: 2002-07-01
Abstract: The invention is concerned with a microlithography projection objective device for short wavelength microlithography, preferably < 100 nm, with a first mirror (S1), a second mirror (S2), a third mirror (S3), a fourth mirror (S4) and a fifth mirror (S5). The invention is characterized by the fact that the image-side numerical aperture is NA ≥ 0.10 and that the mirror closest to the object to be illuminated, preferably the wafer, is arranged in such a way that the image-side optical free working distance corresponds at least to the used diameter D of the mirror closest to the wafer, and/or the image-side optical free working distance is at least the sum of one-third of the used diameter D of the mirror closest to the wafer and a length which lies between 20 mm and 30 mm, and/or the image-side optical free working distance is at least 50 mm, preferably 60 mm.
Patent TW-I257399-B (TW)
Title: Improved cellular plastic material and method of making the same
Inventor: KURTH THOMAS M
IPC: C08G18/64
Filed: 2000-05-15
Granted: 2006-07-01
Abstract: An improved cellular material comprises a urethane foam that is the reaction product of soy oil, an isocyanate, and a cross-linker. The soy oil replaces the polyol typically generally required in the production of urethanes. Because the replaced polyol is a petrochemical, use of a renewable and environmentally friendly material such as soy oil is most advantageous. Further, plastic material of many final qualities may be formed using a single vegetable oil. In addition to cellular foams, solid plastic elastomers may be formed.
Patent TW-581750-B (TW)
Title: Ceramic product used with water and method of stain resistant treatment therefor
Inventor: MIZUNO HARUYUKI
IPC: C04B41/84
Filed: 2000-03-31
Granted: 2004-04-01
Abstract: A layer comprising a stain resistant agent is formed on a treated surface of a ceramic product used with water so that a stain resistant treatment is applied to the treated surface. The stain resistant agent includes a silicon-containing functional group combining with the hydroxyl group present on the treated surface by dehydration or dehydrogenation. Consequently, a high stain resistant effect can be achieved from the ceramic product.
Patent TW-524869-B (TW)
Title: Sputtering device
Inventor: NAKAJIMA KUNIAKI
IPC: C23C14/04
Filed: 2000-04-11
Granted: 2003-03-21
Abstract: A plurality of shield plates provided with holes at the same positions as targets are arranged in a vacuum chamber. Sputtering particles ejected diagonally from the targets become attached to the shield plates and only particles ejected vertically reach the surface of a substrate. As a result, it is possible to uniformly form a thin film inside microscopic holes of high aspect ratio. If sputtering gas is introduced close to the targets, reactant gas is introduced close to the substrate and evacuation is carried out close to the substrate, reactant gas does not reach the targets side. Consequently, it is possible to prevent deterioration of the surfaces of the targets.
Patent TW-491977-B (TW)
Title: Multimedia instruction accelerating device capable of effectively increasing the efficiency and its method
Inventor: WANG KE-FANG
IPC: G06F9/00
Filed: 2000-04-21
Granted: 2002-06-21
Abstract: The present invention relates to a multimedia instruction accelerating device capable of effectively increasing the efficiency and its method, and more particularly to a method using floating numbers to check the instruction row of a field to execute a command of single instruction and multiple data, and further converting the floating number into fixed number. It is able to effectively save the execution time and numeric operating process, and fully utilize the memory space, thereby achieving the purpose of enhancing the 3D accelerating operation and execution. Furthermore, among the multiple attached to the single 3D instruction, a voice mode instruction can be inserted, such that, in the process of executing the 3D accelerating operation program, a voice play program can also be executed, so as to enhance the performance of the multimedia software program.
Patent TW-499801-B (TW)
Title: Method and apparatus for processing a punctured pilot channel
Inventor: BLESSENT LUCA
IPC: H04B1/7093
Filed: 2000-04-24
Granted: 2002-08-21
Abstract: The punctured pilot channel comprises information symbols of uncertain sign punctured into a sequence of pilot channel symbols of predetermined sign. The apparatus includes an information sign demodulation circuit for determining the sign of the information symbols in response to the pilot channel symbols. A continuous pilot generator generates a non- punctured pilot channel of predetermined sign from the information symbols and the pilot channel symbols. In a first embodiment, the information sign demodulator further comprises a dot product circuit for calculating a dot product of the pilot channel symbols and the punctured information symbols, and a threshold comparator for comparing the dot product to a predetermined threshold.
Patent TW-457797-B (TW)
Title: Keyboard with telephone function, and method for controlling the telephone function
Inventor: PARK CHAN-KYUNG
IPC: G06F3/02
Filed: 2000-05-19
Granted: 2001-10-01
Abstract: A keyboard with a telephone function, and a method for controlling the telephone function, are disclosed. The keyboard includes a dialing/key inputting section having a plurality of keys, for carrying out a telephone function. A ringer detects ring signals after their passing through a telephone line connecting section. A headphone connecting section is connected to a headphone for outputting voice signals of the other party through an internal speaker, and for receiving user's voice signals through a mike. A speech network processes voice signals so as to transmit and receive the voice signals between the telephone line and the headphone connecting section under a talk mode. A microcomputer judges on a shift to the talk mode by detecting a key input and ring signals of the ringer, and executes a telephone control program to carry out a relevant talk control operation in accordance with the key input if a shift has been made to the talk mode and if the computer main body is operable. On the other hand, the microcomputer outputs relevant control signals to carry out telephone talks through the headphone connecting section and the speech network if the computer main body is not operable.
Patent TW-477884-B (TW)
Title: Chemical liquid valve
Inventor: NAGAI KIYOSHI
IPC: F16K7/12
Filed: 2000-05-30
Granted: 2002-03-01
Abstract: To provide a chemical liquid valve for quickly washing away a chemical liquid remaining in the chemical liquid valve by using a small amount of pure water. This chemical liquid valve 1 is (1) equipped with an output flow path space 14 formed in the vicinity of the output side of an input flow path 18, a pure water flow path 26 communicating the output flow path space 14 with an input port 27 and a pure water valve seat 28 provided in the middle of the pure water flow path 26, and all of the above components are provided on valve bodies 11 and 19, and also (2) provided with a pure water valve 29 to be brought into contact with or separated away from the pure water valve seat 28.
Patent TW-455964-B (TW)
Title: Multi-chip module package structure with stacked chips
Inventor: HE TZUNG-DA
IPC: H01L23/31
Filed: 2000-07-18
Granted: 2001-09-21
Abstract: A multi-chip module package structure with stacked chips comprises: a substrate, a major chip, a plurality of chip sets, a plurality of pads, a plurality of adhesion layers, a plurality of bonding wires, and a mold compound. The substrate has an upper surface and a backside surface opposite to the upper surface. A plurality of chips are stacked layer by layer on the upper surface of the substrate to form a plurality of chip sets which are adjacent to the major chip. A plurality of pads are arranged between every two adjacent chips. The pads, major chip, chips and substrate are bonded by the plurality of adhesion layers. The chips and major chip are electrically connected to the substrate by a plurality of bonding wires, respectively. Finally, the mold compound is covered on the upper surface of the substrate, the major chip, the pads, the chips and the adhesion layers, thereby completing the package.
Patent TW-477074-B (TW)
Title: Semiconductor device and method of fabricating the same
Inventor: HAMATAKE NOBUHISA
IPC: H01L27/12
Filed: 2000-07-19
Granted: 2002-02-21
Abstract: A semiconductor device comprising full depletion type (FD) PMOS transistors of higher Vt. The transistors for a cell unit in this semiconductor device consist of PMOS transistors formed on a SOI substrate.
Patent TW-466599-B (TW)
Title: Method to prevent the spiking phenomena of polycide layer
Inventor: SHIU SHIN-HUEI
IPC: H01L21/265
Filed: 2000-09-21
Granted: 2001-12-01
Abstract: A method to prevent the spiking phenomena of polycide layer is disclosed, wherein a polysilicon layer, a barrier layer and a silicide layer are formed on the substrate, and nitrogen or silicon are implanted into the silicide layer at the interface of the barrier layer, so that the extra metal in the silicide layer can be reacted with the implanted nitrogen or silicon to generate the bonding, and further prevent the extra metal in the silicide layer from passing through the barrier layer to result in the spiking phenomena.
Patent TW-526395-B (TW)
Title: Method to improve side profile of photoresist pattern
Inventor: HUANG YI-SHIUNG
IPC: G03F7/40
Filed: 2000-09-29
Granted: 2003-04-01
Abstract: A method to improve the side profile of a photoresist pattern comprises hard-baking the photoresist at the glass transition temperature of the photoresist composition after the photoresist being defined, exposed, and developed. The photoresist is reflowed and reshaped to avoid the occurrence of top reentrant, to decrease the mask error factor, and to increase the uniformity of the critical dimension. The hard baking bake step can be replaced by a two-step process to achieve the same object, in which the photoresist is first reflow-baked at a temperature below the glass transition temperature of the photoresist composition, and then at a temperature above the glass transition temperature of the photoresist composition.
Patent TW-495645-B (TW)
Title: Positive-type photoresist composition
Inventor: TAN SJORP
IPC: G03F7/004
Filed: 2000-10-26
Granted: 2002-07-21
Abstract: Provided is photoresist compostion enabling to give a resist pattern having high resolution, no undercut, and perpendicular side walls. A positive-type photoresist composition comprises (a) a compolymer A containing at least one structural unit represented by formulae (I), (II) and (III) wherein R1 and R2, independently of each other, represent hydrogen atom or methyl group, R4 represents a alkyl, aralkyl, aryl or -Y-O-C(=O)-Z group (wherein Y represents an alkylene group having 1 to 20 carbon atoms, and Z represents an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or an aralkyl group having 7 to 20 carbon atoms), R3 represents hydrogen atom or methyl group, and X represents a having saturated condensed polycyclic hydrocarbons or saturated bridged cyclic hydrocarbons.
Patent TW-458837-B (TW)
Title: Laser glass cutting with super cooled gas chill
Inventor: NIKITIN DMITRI
IPC: C03B33/09
Filed: 2000-10-31
Granted: 2001-10-11
Abstract: A method and apparatus for cutting a brittle material by heating the brittle material along a cut path, and subsequently cooling the brittle material using a stream of a super cooled gas directed at the surface of the brittle material. Preferably the super cooled gas comprises solid powder phase carbon dioxide, or a slurry comprising finely divided solid phase carbon dioxide.
Patent TW-I236481-B (TW)
Title: Process for the preparation of acetyl-amidiniophenylalanyl-cyclohexylglycyl-pyridinioalaninamides
Inventor: BREIPOHL GERHARD
IPC: C07K1/02
Filed: 2001-03-07
Granted: 2005-07-21
Abstract: The present invention relates to a process for the preparation of acetyl-amidiniophenylalanyl-cyclohexylglycyl-pyridinioalaninamides of the formula I, in which the anions X are physiologically acceptable anions, and their analogs, which are effective inhibitors of the blood coagulation factor Xa and which can be used, for example, for preventing thromboses. The process according to the invention comprises the coupling of 2-[2-acetylamino-3-(4-amidinophenyl)propionylamino]-2-cyclohexylacetic acid, which is obtained from 2-[2-acetylamino-3-(4-cyanophenyl)-acryloylamino]-2-cyclohexylacetic acid by asymmetric hydrogenation and conversion of the cyano group into the amidine, or a salt thereof, with a 3-(2-amino-2-carbamoyl-ethyl)-1-methylpyridinium salt or a salt thereof. The invention furthermore provides starting materials and intermediates for this process, processes for their preparation and acetyl-(S)-4-amidiniophenylalanyl-(S)-cyclohexylglycyl-(S)-(1-methyl-3-pyridinio)alaninamide as ditosylate salt.
Patent TW-550734-B (TW)
Title: High dielectric constant gate oxides for silicon-based devices
Inventor: HONG MINGHWEI
IPC: H01L29/78
Filed: 2001-02-01
Granted: 2003-09-01
Abstract: A high dielectric rare earth oxide of the form Mn2O3 (such as, for example, Gd2O3 or Y2O3) is grown on a clean silicon (100) substrate surface under an oxygen partial pressure less than or equal to 10<-7> torr to form an acceptable gate oxide (in terms of dielectric constant (epsilon ≈ 18) and thickness) that eliminates the tunneling current present in ultra-thin conventional SiO2 dielectrics and avoids the formation of a native oxide layer at the interface between the silicon substrate and the dielectric. Epitaxial films can be grown on vicinal silicon substrates and amorphous films on regular silicon substrates to form the high dielectric gate oxide.
Patent TW-480604-B (TW)
Title: Raised silicide source/drain MOS transistors having enlarged source/drain contact regions and method
Inventor: SAKIYAMA KEIZO
IPC: H01L29/417
Filed: 2001-02-05
Granted: 2002-03-21
Abstract: A method is provided for forming silicided source/drain electrodes in active devices in which the electrodes have very thin junction regions. In the process, adjacent active areas are separated by isolation regions, typically by LOCOS isolation, trench isolation or SOI/SIMOX isolation. A contact material, preferably silicide, is deposited over the wafer and the underling structures, including gate and interconnect electrodes. The silicide is then planed away using CMP, or another suitable planing process, to a height approximate the height of the highest structure. The silicide is then electrically isolated from the electrodes, using an etch back process, or other suitable process, to lower the silicide to a height below the height of the gate or interconnect electrode. The wafer is then patterned and etched to remove unwanted silicide. The remaining silicide typically forms silicided source regions and silicided drain regions that extend over a portion of the adjacent isolation regions such that the silicided source/drain regions are larger than the underlying source/drain regions to provide a larger contact area.
Patent TW-533651-B (TW)
Title: Multipolar magnet type generator for internal combustion engines
Inventor: TAKAHASHI HIDEAKI
IPC: H02K21/22
Filed: 2001-02-06
Granted: 2003-05-21
Abstract: A rotating electrical machine such as an electrical generator that can be utilized to provide high efficiencies and high outputs in connection with a compact construction. This achieved by having a plurality of spaced permanent magnets of opposite polarity that cooperate with armature coils. The armature coils are wound around core teeth formed from an electromagnetic steel plate having a thickness in the range of 0.25-0.65 mm. The permanent magnets are disposed in circumferentially spaced orientation relative to the axis of relative rotation at a magnet electrical angle theta that is in the range of 120 DEG to 140 DEG.
Patent TW-479159-B (TW)
Title: Interlacing phase shift mask and its manufacturing method
Inventor: SHIU JUNG-WEI
IPC: G03F1/30
Filed: 2001-02-09
Granted: 2002-03-11
Abstract: A kind of interlacing phase shift mask is proposed in the present invention. The invented interlacing phase shift mask includes the first transparent region, which is formed on the transparent substrate with 0 DEG phase angle, and the second transparent region, which is composed of recessed portion on the transparent substrate with 180 DEG phase angle. The third transparent region, which is composed of a light semi-transparent layer with 85-95 DEG phase angle, is formed at the interface position between the first transparent region and the second transparent region. The third transparent region with 85-95 DEG phase angle is used as the buffer region of light intensity such that it is capable of effectively eliminating the phase conflict phenomenon.
Patent TW-490792-B (TW)
Title: Interdigitated capacitor structure for use in an integrated circuit
Inventor: GUPTA ROHINI
IPC: H01L27/04
Filed: 2001-05-14
Granted: 2002-06-11
Abstract: The present invention provides a capacitor structure comprising an array having two dimensions and having first and second electrode elements alternating in both, dimensions of the array, the first electrode elements interconnected and the second electrode elements interconnected, to cause the array to function as a capacitor. The capacitor structure further comprises a dielectric material, which in one embodiment may be silicon dioxide (SiO2), separating the first and second electrode elements in both of the dimensions. In one embodiment of the invention, the first electrode elements are interconnected by a first interconnect, and the second electrode elements are interconnected by a second interconnect, allowing the first and second electrode elements to function as an interdigitated capacitor.