baber/WOPTO huggingface dataset:
Patent TW-268011-B (TW)
IPC: C08F299/02
Filed: 1994-06-15
Granted: 1996-01-11
Abstract: It has now been found that high molecular epoxyacrylate as so-called ''postglycidylized'' epoxy resins (PGEH), for example (meth) acrylic acid, are outstanding as acrylate components of resist formulations, which can thus be used entirely without or with only a small amount of additioanl polymer binder. It has now been found that high molecular epoxyacrylate as so-called ''postglycidylized'' epoxy resins (PGEH), for example (meth) acrylic acid, are outstanding as acrylate components of resist formulations, which can thus be used entirely without or with only a small amount of additioanl polymer binder. The epoxyacrylates have the formula (III): where: Q = H or a group of formula IV: R = H or Mr, R2 = H, Me, or phenyl, T = aromatic bifunctional compound, and M = H or a group of formula VIII: or IX where R1 and R2 = as above, A = aromatic bifunctional compound, n = 0-300, L = a group of formula X: or XI: or = O-A-OM, where in formula III not all M residues simultaneously = H or a groups of formula XII: but at least 10 mole%, preferably 20-00 mole% of the M not present in the Q and L end groups = a group of formula XIII: are used as acrylate components in resist formulations. An Independent claim is included for the use of the epoxyacrylates of formula III for the preparation of ''lotstoppe'' (sic) or primary resists (claimed).
Patent TW-419452-B (TW)
Title: Improved process for preparing 1,2-diacyl-2-t-alkyl hydrazide by use of an anhydride in the first step and process for preparing monoacylhydrazine
Inventor: KELLY MARIGA JEAN
IPC: C07C243/38
Filed: 1994-07-26
Granted: 2001-01-21
Abstract: Selective process for preparing a hydrazide by reacting an aromatic anhydride with a tertiary alky1 hydrazine and then reacting the resultant acy1 hydrazide with an aromatic acid chloride.
Patent TW-346625-B (TW)
Title: Magnetic head
Inventor: OMORI HIROYUKI
IPC: G11B5/31
Filed: 1994-12-09
Granted: 1998-12-01
Abstract: A magnetic head comprising a pair of bases facing each other, which is characterized in that in which a thin film coil is formed on at least one of the bases and a terminal portion connected to the thin film coil is formed on this base and a portion of the other base is cut away and the terminal portion is exposed at this cutaway portion and the terminal portion is formed at the cutaway portion on a surface intersecting the main surface of the magnetic head at an obtuse angle.
Patent TW-369514-B (TW)
Title: A method of sintering Pb(Mg1/3Nb2/3)O3 or the oxide precursors thereof without using lead oxide
Inventor: CHU MIKE SSU-HAI
IPC: C04B35/00
Filed: 1995-01-12
Granted: 1999-09-11
Abstract: A method of sintering Pb(Mg1/3Nb2/3)O3 or the oxide precursors thereof, without using lead oxide, which method is sintered at a temperature of below 1050 DEG C and comprises the use as a sintering aid of barium copper oxide of the formula BaCuO2 the weight ratio of the BaCuO2 sinter aid to the Pb(Mg1/3Nb2/3)O3 or the oxide precursors thereof, being from 0.0033 to 0.01:1.
Patent TW-371643-B (TW)
Title: Refillable container for delivering a spreading compound in particular an adhesive compound
Inventor: PETERS BERND W
IPC: B43M11/08
Filed: 1995-04-19
Granted: 1999-10-11
Abstract: A container (1) for applying spreading product (4), more particularly an adhesive, comprising an inner tube (3), open at least one end (2) which contains the spreadable product (4), which is removably mounted in an outer tube (5) and which comprises a plunger (12) designed to be penetrated by a screwthread spindle (15), and means (6) for securing the inner tube (3) in the outer tube (5), the screwthreaded spindle (15) and the plunger (12) forming cooperative means (11, 14) for applying the spreadable product (4) and the spreadable product (4) being longitudinally displaceable inside the container (1) with no change in the position of the outer and inner tubes (5, 3) relative to one another through rotation of the screwthreaded spindle (15), which engages in a screwthread (13) formed within the plunger (12), by means of an actuating element (21), more particularly a hand operated knurled nut (20), arranged outside the outer tube (5), characterized in that the screwthreaded spindle (15) is rotatably fixed to the inner tube (3) in a position in which it penetrates through the plunger (12) and comprises a connecting part (17) which, in particular, projects form the inner tube (3) and which is designed to be releasable, but non-ratably coupled to a corresponding connecting part (20, 30, 22, 41) of the actuating element (21).
Patent TW-368522-B (TW)
Title: Plate-crystalline tungsten carbide-containing hard alloy, composition for forming plate-crystalline tungsten carbide and process for preparing said hard alloy
Inventor: KOBAYASHI MASAKI
IPC: C22C32/00
Filed: 1995-08-08
Granted: 1999-09-01
Abstract: Disclosed are a plate-crystalline tungsten carbide-containing hard alloy which comprises 4 to 40% by volume of a binder phase containing at least one of iron group metals selected from Co, Ni and Fe as a main component; and the balance of a hard phase comprising tungsten carbide alone, or tungsten carbide and 50% by volume or less of a compound with a cubic structure selected from at least one of carbide and nitride of the 4a(Ti, Zr and Hf), 5a(V, Nb and Ta) or 6a(Cr, Mo and W) group element of the periodic table and mutual solid solutions thereof, and inevitable impurities, wherein when peak intensities at a (001) face and a (101) face in X-ray diffraction using Kalpha rays with Cu being a target are represented by h(001) and h(101), respectively, the tungsten carbide satisfies h(001)/h(101) ≥ 0.50, a composition for forming a plate-crystalline tungsten carbide, and a process for preparing the plate-crystalline tungsten carbide-containing hard alloy.
Patent TW-338066-B (TW)
Title: A method for depositing silicon upon a metal surface by decomposition of an organosilicon compound
Inventor: LARRY E REED
IPC: C01B33/02
Filed: 1995-08-18
Granted: 1998-08-11
Abstract: A method for depositing silicon upon a metal surface by decomposition of an organosilicon compound under the deocmposition temperature required for a given percentage decomposition; the method includes: setting a given percentage decomposition; admixing the organosilicon compound with an organotin compound in an amount sufficient to effectively lower the the decomposition tempereature of the organosilicon required for a given percentage decomposition, in which, the range of atomic ratio of element tin to element silicon is 0.2:1 to 1.5:1, and the organosilicon compound has the following chemical formula: wherein R1, R2, R3, and R4 independent of each other represent a hydrocarbon radical or oxo-hydrocarbon radical respectively, and at least one of them is an oxo-hydrocarbon radical, and the organotin compound is a tetrahydrocarbon tin compound; and making the mixture contact the metal surface to attain a given percentage decomposition of the organosilicon compuond to let the silicon deposit on the metal surface under low temperature which is lower than the decomposition temperature for the organosilicon compound before it is admixed with the organotin compound, wherein, the difference between the decomposition temperature and the low temperature lies betewen 20 degree C and 400 degree C for a given percentage decomposition, and that given percentage decomposition is at least 20%.
Patent TW-332170-B (TW)
Title: The heat-displacing T-die
Inventor: NIITA SATOSHI
IPC: B29C48/08
Filed: 1995-10-19
Granted: 1998-05-21
Abstract: A heat-displacing T-die, it is through the clearance of a pair of flexible lips to extrude the thin sheet of molten resin, in which, the T die can adjust the clearance. The T die includes: Plural manual die screws are arranged on one of flexible lips. Plural die screws are automatically operated by heat-displacing actuator. The automatically operating die screws are arranged on the other flexible lips. The arranging pitch of manual die screw is shorter than the arranging pitch of automatically operating die screws.
Patent TW-284843-B (TW)
Title: The spot phase interferometer
Inventor: LION HUEY-JONG
IPC: G01B9/02
Filed: 1995-10-24
Granted: 1996-09-01
Abstract: A spot phase interferometer includes: Measure optical module which includes a light source, a spectroscope, a reference reflector and a phase adjusting chip; Signal-decomposed module, include a by-spectroscope and two light sensors; Signal processing module, according to the voltage-detected by two light sensor to calculate the displacement of object; Its features includes: the reference light beam reflects from reflector disperse into light spot and part of light beam return to spectroscope; the detecting light beam reflects from object disperse into light spot too, and part of light beam return to spectroscope and combine with light spot of reference light beam to form interference light beam which emit to signal-decomposed module.
Patent TW-436652-B (TW)
Title: Liquid crystal device and method for producing the same
Inventor: ONISHI NORIAKI
IPC: G02F1/1334
Filed: 1995-11-10
Granted: 2001-05-28
Abstract: A liquid crystal device of the present invention includes a pair of substrates opposed to each other with a composite containing polymer regions and liquid crystal regions interposed therebetween, at least one of the substrates being transparent, wherein an insulator as a gap keeping member for keeping a gap between the substrates  is formed in the polymer regions.
Patent TW-446706-B (TW)
Title: Vasoconstrictive substituted 2,3-dihydro-1,4-dioxinopyridines, a pharmaceutical composition containing them, their intermediates and a process for their preparation
Inventor: VAN LOMMEN GUY ROSALIA EUGENE
IPC: A61P9/08
Filed: 1996-01-29
Granted: 2001-07-21
Abstract: The present invention is concerned with compounds of formula, a N-oxide form, a pharmaceutically acceptable acid addition salt or a stereochemically isomeric form thereof, wherein =a1-a2=a3-a4= is a bivalent radical of formula: =N-CH=CH-CH= (a), =CH-CH=CH-N= (d), wherein one or two hydrogen atoms can be substituted by halo, hydroxy, C1-6alkyl or C1-6alkyloxy; Alk1 is C1-5alkanediyl; Alk2 is C2-15alkanediyl; Q is a radical of formula wherein R7 and R8 each independently are hydrogen, hydroxy, halo, or methyl; R19 and R20 each independently are hydrogen, hydroxy, halo, or methyl. Pharmaceutical compositions, preparations and use as a medicine are described.
Patent TW-450832-B (TW)
Title: Method and apparatus for treating the atmosphere
Inventor: HOKE JEFFREY B
Filed: 1996-02-08
Granted: 2001-08-21
Abstract: A method of treating the atmosphere comprising ambient air comprising: contacting the ambient air with a pollutant treating surface of a stationary air handling system of the type useful for facilities selected from the group consisting of residential buildings, commercial buildings, industrial buildings, power plants, oil refineries, and chemical plants, the air handling system comprising a substrate selected from the group consisting of fan blades, ducts, louvers, grills, motor housings, filtration media, screens, coils, fins and plates, on which the pollutant treating surface is located, the pollutant treating surface having a pollutant treating material thereon selected from the group consisting of one or more adsorption compositions one or more catalyst compositions and one or more catalytic compositions for promoting one or more chemical reactions selected from the group consisting of the conversion of ozone to oxygen, the reaction of carbon monoxide with oxygen to form carbon dioxide, and the decomposition of hydrocarbons.
Patent TW-377313-B (TW)
Title: The method of making extruded structures
Inventor: GADKAREE KISHOR PURSHOTTAM
IPC: B29C47/00
Filed: 1996-02-17
Granted: 1999-12-21
Abstract: A shaped article and method for making the article is disclosed. The method involves forming a raw material mixture of a thermosetting resin which can be either one or more solid resins or one or more liquid resins, hydrophilic filler, temporary organic binder, and optionally an effective amount of extrusion aids. When the resin is a liquid, the filler is at least carbonizable. When the resin is a solid, the filler can be carbonizable and/or inorganic. The mixture is extruded into a shaped article, dried, and the resin is cured. The cured article can be further carbonized and activated. The activated carbon, especially a honeycomb can be used for adsorbing components from a workstream.
Patent TW-434437-B (TW)
Title: Stable liquid enzyme compositions and methods of use in contact lens cleaning and disinfecting systems
Inventor: CHOWHAN MASOOD A
IPC: A61L12/14
Filed: 1996-07-19
Granted: 2001-05-16
Abstract: Stable liquid enzyme compositions containing an ophthalmically acceptable enzyme and methods involving the combined use of these compositions with a polymeric antimicrobial agent are disclosed for the simultaneous cleaning and disinfecting of contact lens. Methods for a daily use regimen are also disclosed.
Patent TW-326579-B (TW)
Title: Carbon material for lithium secondary battery and
Inventor: TAMAKI TOSHIO
IPC: H01M4/58
Filed: 1996-08-12
Granted: 1998-02-11
Abstract: A carbon material for use in a lithium secondary battery is disclosed, which is obtained by graphitization conducted in the presence of a boric compound. When subjected to X-ray diffractometry, it exhibits an interlunar spacing of 002 surface(d002) of not grater than 0.338 nm, a crystallite size along c-axis(Lc) of at least 35 nm, a crystallite size along a-axis(La) of at least 50 nm and a ratio of diffraction peak(101) to diffraction peak(100)(designated as P101/P100) and contains boron in an amount at least ranging from 1,000 ppm to 30,000 ppm.
Patent TW-410273-B (TW)
Title: Method and apparatus for generating and encoding line spectral square roots
Inventor: GARDNER WILLIAM R
IPC: G10L19/07
Filed: 1996-08-14
Granted: 2000-11-01
Abstract: A novel and improved method and apparatus for encoding line predictive coding (LPC) data in a speech compression system using line spectral square root values is disclosed. A novel and computationally efficient procedure for determining the set of quantization sensitivities for the line spectral square root values is disclosed, which results in a computationally efficient error measure for use in vector quantization of the line spectral square root values. A novel method of weighting the quantization error is disclosed, which accumulates the quantization error in each line spectral square root value and weights that error by the sensitivity of that line spectral square root value.
Patent TW-360583-B (TW)
Title: Cutting device for cutting tape material and printing apparatus incorporating the cutting device, and method for forming tape material
Inventor: IKEGAMI TOSHIMASA
IPC: B23D/
Filed: 1996-10-30
Granted: 1999-06-11
Abstract: There is provided a cutting device for cutting tape material. A tape-cutting block of the cutting device for cutting off the tape material has a pair of tape-cutting edges which slide past each other to thereby cut the tape material to a cut-off piece having a predetermined length. The tape-cutting block has at least one movable blade formed with one of the pair of tape-cutting edges. An end-trimming block of the cutting device for trimming an end of the cut-off piece has a pair of end-trimming edges which slide past each other to thereby trim the end of the cut-off piece into a predetermined shape. The end-trimming block has at least one movable blade formed with one of the pair of end-trimming edges. The at least one movable blade of the tape-cutting block and the at least one movable blade of the end-trimming block are caused to perform cutting operations by a single cutting operation component device. There is also provided a printing apparatus incorporating the cutting device.
Patent TW-344886-B (TW)
Title: Process for producing SRAM local interconnect
Inventor: LIANG GUEY-JANG
IPC: H01L21/768
Filed: 1996-12-19
Granted: 1998-11-11
Abstract: A process for producing an SRAM local interconnect, which comprises the following steps: (a) providing a silicon substrate, separately forming a gate and a field oxide on the P-well and the N-well of the silicon substrate; (b) depositing an isolating oxide layer, and etching the isolating oxide layer of the node by a photoresist process; (c) depositing a layer of thin polysilicon, and carrying out an N+ shallow implantation and an N+ deep implantation by the photoresist process; (d) carrying out a P+ shallow implantation and a P+ deep implantation by the photoresist process; (e) depositing a low resistance material on the thin polysilicon, and carrying out a photoresist and an etching process, etc., thereby completing the production of the local interconnect.
Patent TW-316328-B (TW)
Title: Manufacturing method of silicon nitride/silicon dioxide dielectric of stacked capacitor by inductively-coupled nitrogen plasma
Inventor: YANG MING-DAR
IPC: H01L21/76
Filed: 1997-01-16
Granted: 1997-09-21
Abstract: A forming method of capacitor of integrated circuit at least comprises of:(1) depositing first polysilicon layer on the semiconductor substrate; (2) patterning photoresist pattern to form on the first polysilicon; (3) with the photoresist as mask etching the first polysilicon layer; (4) removing the photoresist; (5) implementing cleaning procedure to remove first native oxide on the first polysilicon layer; (6) with first inductively-coupled nitrogen plasma processing to depress natural forming of first oxide before forming capacitor dielectric; (7) forming silicon nitride on the first polysilicon; (8) forming second dioxide on the silicon nitride; (9) forming second polysilicon on the second dioxide.
Patent TW-385336-B (TW)
Title: Method of making a heat treated steel casting
Inventor: HEWITT PAUL HERBERT
IPC: C22C38/42
Filed: 1997-03-27
Granted: 2000-03-21
Abstract: A method of making a heat treated steel casting and a heat treated steel casting. The method comprises the steps of taking a ""as-cast"" steel casting comprising not more than 0.2% carbon, a total alloy content of less than about 4%, a carbon equivalent, as herein defined, lying in the range 0.45-0.7 and cooling the casting after performing the casting operation and then performing a heat treatment operation by re-heating the casting to a temperature above the AC3 temperature to homogenize the casting, then cooling the casting to an inter-critical temperature lying between the AC3 and AC1 temperature and then quenching to room temperature.
Patent TW-397726-B (TW)
Title: Process for producing granular material and shaped parts from hard metal materials or cermet materials
Inventor: HESSE WERNER
IPC: B22F1/10
Filed: 1997-03-31
Granted: 2000-07-11
Abstract: In a process for producing granular material in which at least one hard material phase is mixed with a metal powder and a binder and granulated, no premixing of the hard material phase and the metal powder takes place before mixing with the binder and the binder has a viscosity of from 20 to 200 cm<3>/10 min, preferably from 30 to 100 cm<3>/10 min, in accordance with DIN 53735 at 195 DEG C and a load of 2.16 kg.
Patent TW-472077-B (TW)
Title: Process for preparing bitumen compositions
Inventor: STEERNBERG KOEN
IPC: E01C7/22
Filed: 1997-06-12
Granted: 2002-01-11
Abstract: Process comprising contacting bitumen with oxygen at elevated temperature in the presence of an acid capable of reacting with the bitumen, and subsequently contacting the acid blown bitumen at elevated temperature with a polymer containing epoxy groups, bitumen compositions obtainable thereby, the use of such bitumen compositions in airfield pavements, buslanes and/or flooring of gas stations and to airfield pavements, buslanes and flooring of gas stations containing such bitumen composition.
Patent TW-341702-B (TW)
Title: Optical pickup device
Inventor: FUKAKUSA MASAMURA
IPC: G11B7/12
Filed: 1997-09-30
Granted: 1998-10-01
Abstract: An optical pickup device which has a single light beam path for common use in treating or passing either of a plurality of kinds of light beams for respective recording densities and/or recording-medium-thicknesses different from each other, in other words, at least one or either of the plurality of kinds of light beams is introduced into the common single light beam path which may includes a single quarter-wave plate and/or single collimator and/or single objective.
Patent TW-409418-B (TW)
Title: SOI silicon wafer and its manufacturing method
Inventor: YAMAMOTO HIDEKAZU
IPC: H01L21/762
Filed: 1997-10-28
Granted: 2000-10-21
Abstract: The object of the invention is to provide a SOI silicon wafer whose surface will not be defected by chemical mechanic polishing. To achieve the object, firstly, the hydrogen ions are implanted onto the surface of the silicon wafer to form the hydrogen implantation layer. Then, the silicon wafer is heated to make the silicon surface delaminated on the hydrogen implantation place. The silicon wafer could proceed annealing process on the hydrogen gas subsequently in order to flatten the delaminated exposed surface. Besides, the annealing process also could be replaced by plasma annealing or rapid thermal annealing process within the hydrogen.
Patent TW-418444-B (TW)
Title: The surface treatment method of silicon single crystal and the manufacture method of the silicon single crystal thin film
Inventor: HABUKA HOTOSHI
IPC: H01L21/311
Filed: 1997-11-20
Granted: 2001-01-11
Abstract: This invention relates to a kind of surface treatment method of silicon single crystal and the manufacture method of the silicon single crystal thin film, which is to provide the surface treatment method of silicon single crystal. It will never cause the out-diffusion of the dopant and the phenomena of auto doping and the manufacture method of the silicon single crystal thin film. Its solving means is to expose the surface of the silicon single crystal 2 in the mixing gas containing hydrogen fluoride and hydrogen at the temperature range between 0-100 DEG C, and to remove the native oxide film 3 produced on the surface of the silicon single crystal. The time exposed on said mixing gas is preferred between 0.5 and 3 minutes, next, to expose the silicon single crystal in the 20-80% humidity ambient. The better way is to further expose the surface of the silicon single crystal 2 in the mixing gas containing hydrogen fluoride and hydrogen at the temperature range between 0-100 DEG C. Besides, before removing the native oxide film, it is preferred to adjust beforehand and control the thickness of the native oxide film 3 below 10 <ANGSTROM>. The formation of the silicon single crystal thin film is preferred after proceeding the above-mentioned surface treatment and next proceeds under hydrogen ambient.
Patent TW-438851-B (TW)
Title: Halogen-free oligomeric or polymeric alkylene-bridged alkyl phosphonates and their uses
Inventor: HARRIS CHRISTOPHER JOHN
IPC: C08G79/02
Filed: 1997-11-20
Granted: 2001-06-07
Abstract: Halogen-free, oligomeric or polymeric, alkylene-bridged alkyl phosphonates having the general formula, where n is a whole number of from 1 to 20; R1 and R5 are each C1-C6 alkyl; R2 and R4 are each C2-C10 alkyl and R3 is C2-C10 alkyl. The use of such phosphonates as, or in connection with, a flame-retardant (e.g. for polyurethane foams, resins and composites, epoxy resins, phenolic resins, paints, varnishes or textiles).
Patent TW-400580-B (TW)
Title: Bump forming method
Inventor: BANDO AKIO
IPC: H01L23/485
Filed: 1997-11-25
Granted: 2000-08-01
Abstract: The object of the present invention is to provide a bump forming method in which deformation of the wire can be prevented following the breaking of the wire, and which makes it possible to simplify the apparatus and shorten the bump forming time. The object of the present invention is accomplished by a unique method in which a ball 6 is formed on the tip end of a wire 5 passing through a capillary, this ball 6 is pressed against the electrode 2 of a semiconductor device 1, the capillary is raised, and then a root portion of the ball 6 is cut by a pair of cutters from both sides of the wire 5, thus forming a bump 8 on the electrode 2.