Patent GB-1017777-A (GB)
Title: Improvements in and relating to semi-conductor devices
IPC: H01L29/00
Filed: 1962-08-14
Abstract: 1,017,777. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Aug. 14, 1962 [Aug. 17, 1961], No. 31166/62. Heading H1K. A semi-conductor wafer has a PN junction extending inwards from one main face and having a section adjacent and parallel to the opposite main face to define an overlapping area in which the base zone of a transistor is formed. The device illustrated in Fig. 18, constituting the circuit shown in Fig. 17 is formed by first cutting a wafer from a grown germanium body having 10 ohm cm. indium doped P-type sections and 0À05 ohm cm. antimony doped N-type sections and immersing it in copper sulphate solution to copper plate and thus mark the P-type zone. Recesses 165, 180 are next cut ultrasonically to define resistive paths 175, 176, 177 in the high resistivity P material and subdivide PN junction 161. After etching to remove the copper and reduce the wafer thickness to 150 Á pellets 166-169 of lead-antimony alloy are applied and heated to make them adhere. Aluminium paint is then applied to pellets 167-169 and the assembly heated to 800‹ C. for 15 minutes. Antimony diffuses from the pellets to form N-type surface layers which are overlaid at pellets 167-169 by recrystalline P-type zone. It also evaporates and forms a thin N layer over the rest of the surface. Unwanted parts of this layer are then etched away to leave only regions 183, 185, 187. Finally the sections 161, 162 of the PN junction are short circuited by scratching the upper and lower surfaces with a sharp point, nickel strips 172, 178 are attached by indium solder and nickel wires 179 with lead-tin solder and the device etched. Arrangements lacking the resistive paths but otherwise essentially similar are described with reference Figs. 14, 15 and 16 (not shown). Another device, Fig. 24, incorporating the circuit shown in Fig. 19 is formed by first cutting to the form shown a section of grown crystal containing 10 ohm cm. N-type material separated by PN junction 208 from 1 ohm cm. P-type material. Pellets are alloyed in as before, aluminium being in this case applied only to pellets 202 and 205. As an alternative the antimony may be introduced into the pellets from the atmosphere or an antimony diffused layer formed before the alloying. Before or after etching to leave the N layer at 223 only an indium electrode is alloyed to the lower surface of the wafer opposite 205 to form the Zener diode section, and nickel wires attached as before. The resistors are formed by the sections 204 and 209 of N-type material. An essentially similar arrangement formed in a straight strip of semi-conductor initially containing two PN junctions is described (Fig. 23, not shown) together with modifications in which the Zener diode section and/or the resistor corresponding to 204 are omitted. In one arrangement resistor section 209 is replaced by the resistance across the wafer from contact 205 to an ohmic contact in the position occupied in Fig. 24 by the Zener diode contact. Wafers containing only a single transistor or a pair of internally interconnected transistors are also described. In some of these the base zones of the two transistors are extensions of a common zone, while in others the base zones are of opposite conductivity types and meet in a PN junction which is shorted by scratching, by a metal bridge piece, or by doping the parts of the zones immediately adjacent the junction sufficiently to provide a low-resistance junction. In some arrangements only one of the transistors has its base zone defined by part of a lateral PN junction extending parallel to the wafer faces. Various methods of forming these arrangements are suggested using the techniques of alloying, diffusion into the surface and epitaxial deposition. Use of silicon and gallium arsenide as alternative semi-conductor materials is suggested.