baber/WOPTO huggingface dataset:
Patent JP-H04344577-A (JP)
Title: Image shape recognizing method
Inventor: MISHIERU SHIYUMITSUTO
IPC: G06V10/42
Filed: 1992-01-16
Abstract: PURPOSE: To process the form of the type of a wide range by matching a face with a picture form, overlapping the face with a picture grid, scanning the face through the use of an algebraic element, measuring the size of the face and matching the picture form identifier with all the sizes of the face scanned in a sorting unit. CONSTITUTION: The form FI is converted into the face SI and is overlapped with the picture element PI. Position data is measured in respective points in an outline. Then, the algebraic form containing the multiple picture elements in large size as much as possible, a hexagon, for example, is moved on the face SI. Then, the smaller hexagon different in the number of the picture elements is moved on the face SI and the area of the face SI is measured. Then, same scanning is repeated with much smaller hexagon. A curve showing the distribution of surface areas is formed by using the surface areas obtained for the hexagons of respective sizes is formed. Thus, the curve shows the spectrum distribution of the form, which is obtained by the sizes of the different hexagons. Then, spectrum distribution in a neural sorting unit is examined.
Patent JP-H09217516-A (JP)
Title: Putting-in/out device for multistory parking garage
Inventor: IKENAGA TAKAYASU
IPC: E04H6/28
Filed: 1996-02-14
Abstract: PROBLEM TO BE SOLVED: To transfer cars smoothly by constituting in such a way that a movable conveyor device on a turntable provided at the front part of an elevator device in a putting-in/out part can be brought close to an intermediate conveyor by a connecting device. SOLUTION: An intermediate conveyor device 8 is provided between an elevating base 1 and a turntable device 7. A turntable 13 turned by a turning device 14 is provided with a movable slat conveyor 15 that can be drawn close to the intermediate conveyor 8 by a connecting device 16. After a car is transferred onto the movable slat conveyor device 15 and stopped, the turning device 14 is driven to turn the turntable 13 by 90 deg. so as to turn the movable slat conveyor device 1 toward a parking room 5a side. The movable slat conveyor device 15 is then brought close to an intermediate slat conveyor 8b, and the movable slat conveyor device 15, the intermediate slat conveyor 8b, and the like are driven to carry the car onto the elevating base 1 from the turntable 13. The entry-delivery of the cars is thereby facilitated.
Patent JP-H09200174-A (JP)
Title: Multiplex demultiplex signal monitor system
Inventor: YABUTA KATSUMI
IPC: H04L1/00
Filed: 1996-01-19
Abstract: PROBLEM TO BE SOLVED: To attain period monitor between a signal before multiplexing and a signal after demultiplexing by using a delayed timing so as to allow a demultiplexer side to conduct parity check. SOLUTION: A signal to which a parity bit is added by PTYGEN sections 1-3 is multiplexed by an MUX section 4, demultiplexed by a DMUX section 5 and restored to an original low speed signal to which a parity bit is added. On the other hand, a timing signal (a) outputted from an AND circuit 10 used to add a parity bit is delayed by a DLY section 6 for a time from a multiplexed low speed signal till it is demultiplexed. Then the low speed signal to which a parity bit is added is subject to parity-check based on a timing signal a' delayed by PTYCHK sections 7-9. Then each signal outputted from the PTYCHK sections 7-9 and the timing signal a' are ORed by an OR circuit 11 to restore the added parity bit into the original '1' and a receiver side recovers the signal into the original low speed signal.
Patent JP-H01203069-A (JP)
Title: Coating equipment
Inventor: MURAYAMA AKIMASA
IPC: B05C1/02
Filed: 1988-02-08
Abstract: PURPOSE:To mechanize coating operation on a lamellate small piece and to perform labor saving by providing a coating part applying a coating agent on the other face of the lamellate small piece in the midway part of carrier thereof to a second carrier part carrying the lamellate small piece in such a state that the lamellate small piece has been bonded on the single face of a strip adhesive sheet. CONSTITUTION:A lamellate small piece (e.g. prepaid card) 4 is carried by a belt from the left direction in a first carrier part A. On the other hand, in a second carrier part B joined to the upper part of the first carrier part A, a fed strip adhesive sheet 7 is travelled while being held and the single face 4a of the lamellate small piece 4 carried by the belt is bonded on the adhesive layer 71 on the single face of this adhesive sheet 7 and the lamellate small piece 4 is carried intactly in this bonded state. A coating agent 10 is applied on the other face 4b of the small piece 4 during this carrier by a coating part C provided to the nearly middle position of the second carrier part B. There after, the coated lamellate small piece 4 is peeled from the adhesive sheet 7 with a peeling blade 12 and stored in a stocker 13.
Patent JP-S57139955-A (JP)
Title: Integrated circuit device
Inventor: TOMITA YUTAKA
IPC: H01L27/04
Filed: 1981-02-24
Abstract: PURPOSE:To make the plural resistivity constant by a method wherein the plural resistors are arranged so that they may roughly become the symmetric points to the center of the integrated circuit device in an integrated circuit device comprising plural resistors. CONSTITUTION:In the plural resistors Rg-Rr, the resistivity thereof are made constant i.e. Rg/Rh=Ri/Rj=Rk/Rl=Rm/Rn=Ro/Rp=Rq/Rr. Rg and Rh, Ri and Rj on a semiconductor IC circuit die 2 are respectively perpendicular to each other and arranged so that they may roughly become the symmetric points to the center of a die on the line passing the center of the die. The fluctuation of the resistivity after the resin molding decreases down to 0.2-0.3%. Through these procedures, the stress the die receives from the resin molding is made almost equivalent making the resistivity preferable even after assembling.
Patent JP-H10207999-A (JP)
Title: Two-dimensional data symbol processing system
Inventor: SEO SHUZO
IPC: G06K17/00
Filed: 1997-01-24
Abstract: PROBLEM TO BE SOLVED: To provide an information processing system which is not affected even if magnetic data is forged. SOLUTION: A magnetic recording part 10 is provided near the lower end part of a prepaid card 1. A frequency display part 11 on which a numeric value becoming the measure of remaining frequency is printed is provided near an upper end part. Punch holes are pierced under the numeric values of the frequency display part 11. A first two-dimensional code 12 and a second two-dimensional code 13 are printed on the parts where the punch holes are pierced. When the remaining frequency of the prepaid card 1 becomes 50, prescribed information is written into the magnetic recording part 10 and the punch hole is pierced in the first two-dimensional code 12. When remaining frequency becomes '0', prescribed information is written into the magnetic recording part 10 and the punch hole is pierced in the part of the second two-dimensional code 13 by a punch 22.  A card checker judges the use situation of the prepaid card 1 by the magnetic recording part 10 and the first and second two-dimensional codes 12 and 13.
Patent JP-S57177983-A (JP)
Title: Electrode and use
Inventor: PEETAA FUABIAN
IPC: C25B11/04
Filed: 1982-02-19
Abstract: A composite electrode comprising an electroconductive base with an electrolyte inert, electroconductive electrocatalytic layer applied by thermal spraying, the said layer being a powder of a matrix material selected from the group consisting of oxides, nitrides, phosphides, silicides, borides and carbides of a metal selected from the group consisting of boron, valve metals and iron group metals having uniformly deposited thereon electrocatalytically active particles of a metal selected from the group consisting of platinum group metals and iron group metals and oxides thereof with a particle size smaller by at least one order of magnitude of the matrix particles and electrolytic cells containing the same and electrolytic processes using the same.
Patent JP-H09199562-A (JP)
Title: Quality inspection method of silicon wafer
Inventor: IKEMATSU YOICHI
IPC: G06M11/00
Filed: 1996-01-19
Abstract: PROBLEM TO BE SOLVED: To enable quickly estimating fraction defective at a low cost as compared with the case measuring a practical oxide film withstand voltage, and with high precision as compared with the conventional simple method, by forming an oxide film, by thermal oxidation, on a washed surface subjected to mirror finish and counting the number of COP's which have appeared in the process. SOLUTION: After a silicon single crystal stick is grown, a wafer having a specified width is cut out from the single crystal stick, and the surface of the wafer is mirror finished and washed. An oxide film is formed on the surface by thermal oxidation, the number of COP's which have appeared in the process is counted, and the crystal quality is estimated. As to the condition of thermal oxidation, it is preferable that the width of the oxide film is set to be 7-40nm in dry oxygen atmosphere at 800-1100 deg.C. Thereby close positive correlation shown in a figure exists between the density of the COP's which have appeared after the oxide film is formed and that of oxide film withstand voltage deterioration factors, so that the oxide film withstand voltage can be indirectly estimated on the basis of the counting value of the COP's.
Patent JP-H08203854-A (JP)
Title: Method for washing semiconductor wafer
Inventor: SATO KAORU
IPC: H01L21/304
Filed: 1995-01-20
Abstract: PURPOSE: To improve the reliability and performance of a semiconductor device by eliminating a foreign object formed on the surface of a semiconductor wafer in a washing treatment process using aqueous solution of hydrofluoric acid. CONSTITUTION: After silicon wafer 1 is dipped into an aqueous solution of hydrofluoric acid with a concentration of 0.5-5.0% for 10 minutes in a treatment bath 2 for washing treatment, the silicon wafer 1 is dipped for 10 minutes in a water-washing bath 4 where pure water 5 heated to at least 60 deg.C is supplied, thus eliminating a string-shaped foreign object adhered to the silicon wafer 1 when performing treatment by the aqueous solution of hydrofluoric acid 3.
Patent JP-H05195061-A (JP)
Title: Production of cr-mo steel for pressure vessel
Inventor: NISHIMORI MASANORI
IPC: C21D1/18
Filed: 1992-01-17
Abstract: PURPOSE:To easily produce a Cr-Mo steel for pressure vessel having high strength and high toughness and excellent in hydrogen attack resistance. CONSTITUTION:A steel stock which has a composition containing, by weight, 0.05-0.20% C, >=0.40% Si, 0.1-1.0% Mn, <=0.5% in total, of Cu and/or Ni, 2.0-3.5% Cr, 0.8-1.6& Mo, 0.10-0.40% V, 0.005-0.1% Nb, <=0.08% Al, <=0.010% P, <=0.004% S, and <=0.006% N and also containing, as selective components, one or >=2 kinds among 0.005-0.035% Ti, 0.0005-0.004% B, <=0.03% Ca, and <=0.03% REM is subjected to light draft rolling at 5-20% draft at a temp. between 900 deg.C and the Ar3 and then to direct hardening, by which the Cr-Mo steel for pressure vessel can be produced.
Patent JP-H11223607-A (JP)
Title: Crystal defect measuring method, and crystal defect measuring device
Inventor: MAEJIMA MUNEO
IPC: G01N21/95
Filed: 1998-02-06
Abstract: PROBLEM TO BE SOLVED: To measure an internal defect of a sample with constant precision all the time even when the surface of the sample is moved vertically by thickness unevenness of the sample and a precision problem of a sample moving stage. SOLUTION: In this measuring method, light beams of two wavelengths different in their penetrating depths for a sample 15 are made to get obliquely incident on the surface of the moving sample 15 from irradiation optical systems 4, 8, and scattered lights of two wave lengths generated in the inside of the sample 15 are detected by a detection optical system 9 arranged in an upper side of the sample surface to measure an internal defect of the sample 15. A capacitance type distance measuring means 14 is arranged in an upperstream of a sample moving direction with respect to the optical systems 4, 8, 9 so as to measure the height of the sample surface.  When a measuring point on the sample 15 height-measured by the distance measuring means 14 reaches to the underside of the detection optical syatem 9, height positions of the optical systems 4, 8, 9 are controlled by piezoelectric elements 11, 12, 13 to locate the optical systems 4, 8, 9 in prescribed positions with respect to the measuring point.
Patent JP-H02208409-A (JP)
Title: Judgement of combustion in refuse incinerator
Inventor: TAKAHATA YOSHIAKI
IPC: F23G5/50
Filed: 1989-02-03
Abstract: PURPOSE:To make it possible to detect subtle changes in combustion by taking pictures of the state of combustion by a TV camera and binary-coding them to provide binary code picture images and retrieving a coinciding pattern out of flame shape patterns that are set beforehand to judge the present state of combustion. CONSTITUTION:The image of combustion of refuse in an incinerator is picked up by an industrial camera 9 and it is sent to a processing device 14. The processing device 14 binary-codes the picture images to provide binary-coded picture images. And they are compared with the flame shape patterns beforehand stored in a memory and coinciding flame shape pattern is retrieved from the memory to judge the present state of combustion. With this constitution it is possible to judge a subtle change in the state of combustion.
Patent JP-S56122592-A (JP)
Title: Scanning system
Inventor: ENOKIDO SUSUMU
IPC: H04Q3/72
Filed: 1980-03-03
Abstract: PURPOSE:To miniature a scanning device which has lines of a telephone switchboard and monitor points for every line, by decreasing the number of filters by processing previous information between the assignment of a line and the collection of information on monitor points. CONSTITUTION:When driving line ROW0 is assigned and changes in state at monitor points a00-a0m of the line are to be detected, a positive pulse appears like driving ROW0 once the line is assigned. The pulse appears at filters FIL0-FILm provided corresponding to the monitor points. Through the filters, time limitation for noise absorption in carried out and their outputs appear at sense amplifiers SA0-SAm, but, for example, when monitor point a00 is in operation, the positive pulse flows to the ground and appears at neither filter FIL0 nor sense amplifier SA0, so that sense amplifier SA0 will detect monitor point a00 being in operation. Thus, filters are only provided as many as sense amplifiers because monitor information read between line assignment and detecting-reading operation is processed.
Patent JP-H08222749-A (JP)
Title: Method of manufacturing thin film solar battery
Inventor: SASAKI TAKAOKI
IPC: H01L31/04
Filed: 1995-02-15
Abstract: PURPOSE: To lower the connection resistance to a connecting electrode even in optically optimum film thickness for lessening the series resistance compound by a method wherein the thickness of the upper layer part of the upper substrate part of a transparent electrode layer connected to the connecting electrode layer on the substrate back passing a through hole of the substrate is thinned leaving the creeping part in the substrate. CONSTITUTION: A transparent electrode layer 15 made of ITO is firstly formed by mask forming step on an α-Si layer 14 of a substrate 4. Next, the ITO on the topmost surface of the Si layer film 14 is removed for thinning the thickness of the ITO film 15. Next, after plasma etching until the ITO electrode layer 15 in optically optimum film thickness of about 50-100nm is left on the surface, the ITO electrode layer 15 is laminated on the back electrode layer 12 back passing the second through hole 22 to form an additional metallic back electrode layer 19 for creeping in the through hole 22 to be laminated on the ITO electrode layer 15.  Through these procedures, the ITO electrode layer 15 on the α-Si layer 14 is thinned by plasma etching step but the inside of the through hole 22 not etched away is left intact so that the ITO electrode layer 15 may be made in electrically and optically optimum film thickness.
Patent JP-S57140181-A (JP)
Title: Setting of paper width for printer
Inventor: MASUI YOUICHI
IPC: B41J29/50
Filed: 1981-02-25
Abstract: PURPOSE:To set a printing width accurately dispensing with a sensor or the like by a method wherein a head is moved to the position of a proper paper width when a paper is loaded into a printer after various paper widths are registered into the printer according to the type of papers to be used and the position is transfered to a register to memorize. CONSTITUTION:Registered values of paper widths corresponding to the type of papers 4a-4n to be loaded into a printer are memorized into a register in the printer as step shifting positions pa-pn. When a paper setting switch SW1 is turned ON after a paper is loaded, a carrier moves to the first step position Pa. When the paper matches a paper width, a paper setting switch SW3 is depressed. If it does not match with a paper width, a carrier shifting switch SW2 is depressed repeatedly until it matches with any width. When the paper is found to match with any width, the switch SW3 is depressed. Thus, with the switch SW3 ON, the dimensions of the paper is set in the register.
Patent JP-S61187330-A (JP)
Title: Manufacture of semiconductor device
Inventor: KONO YOSHIO
IPC: H01L21/8244
Filed: 1985-02-15
Abstract: PURPOSE:To assure an excellent ohmic connection reducing any surface irregularities by a method wherein an impurity added layer is selectively formed in a connecting hole to be heat-treated for diffusing the impurity into the adjoining layers to be connected. CONSTITUTION:An N<+> layer 18 is formed on a P-type substrate 10 to be covered with a CVD oxide film 20 and then a connecting hole 26 is selectively formed. Then the connecting hole 26 is filled with P added poly Si 28 to be deposited thereon. Firstly the poly Si 28 is left only in the hole 26 by means of anisotropic etching process and then non-additive poly Si 30 is deposited to form a smooth layer 30. Secondly the layer 30 is implanted with As ion leaving resist on highly resistant part to be heat-treated for diffusion process. At this time, As diffusion at high temperature becomes needless since overall surface of the layer 30 may be implanted with As ion without fail even if the implantation process is performed in the oblique direction due to the smoothness of the layer 30. Besides, P in the layer 28 may be diffused into the N<+> layer 18 and the poly Si 30 at low temperature. Resultantly, the ohmic connection between the layers 18 and 30 may not be deteriorated making the direct contact between them excellent.
Patent JP-H07234494-A (JP)
Title: Cleaning method for photosensitive material and device therefor
Inventor: MATSUMOTO NOBUO
IPC: G03D5/04
Filed: 1994-02-24
Abstract: PURPOSE:To decrease the supply amt. of a fresh cleaning liquid, to clean a photosensitive material with a small amt. of the cleaning liquid, and to surely clean the photosensitive material. CONSTITUTION:A photosensitive material 10 is carried by rollers 12a, 12b,..., 12g which are disposed gradually at higher positions to the downstream in the carrying direction. A cleaning liquid is sprayed with sprays W1, W2,...W6 and recovered in recovering tanks 14a, 14b,...14f and reserved in reservoirs 20a, 20b,...20f partitioned with walls which are gradually made higher to the downstream in the carrying direction of the photosensitive material 10. An excess amt. of the cleaning liquid over the specified amt. is reserved in a reservoir 20 in the upstream side in the carrying direction. The cleaning liquid reserved is supplied through guiding pipes 24a, 24b,...24f to the respective sprays W1, W2,...W6.
Patent JP-H01203278-A (JP)
Title: Heat insulating refractory composition of ceramics fiber system
Inventor: SAKAMOTO YOSHIHIRO
IPC: C04B35/66
Filed: 1988-02-09
Abstract: PURPOSE:To provide the title heat insulating refractory compsn. which is short in curing time, allows application by casting and yields a uniform applied material by consisting said compsn. of respectively prescribed ratios of alumina-silica ceramics fibers, hydraulic alumina and refractory aggregate. CONSTITUTION:The heat insulating refractory compsn. of the ceramics fiber system is provided by incorporating 5-50pts.wt. above-mentioned fibers which are preferably crystalline, 20-80pts.wt. hydraulic alumina as a binder, and 0-75pts.wt. refractory aggregate such as andalusite into the compsn. in such a manner that the total content of the three components attains 100pts.wt. The above-mentioned ceramics fibers which are cut to 1-100mm length, more particularly 5-10mm length are more preferable. The above-mentioned heat insulating compsn. does not degrade the refractoriness of said ceramics fibers when the hydraulic alumina is added as the binder thereto. The heat insulating refractories of an arbitrary shape in which the above-mentioned fibers are used are thus easily obtd.
Patent JP-S61227836-A (JP)
Inventor: ROBAATO ERU IITON
IPC: F23C10/20
Filed: 1986-02-08
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S61186007-A (JP)
Title: Amplifier circuit
Inventor: KATO MASAMI
IPC: H03F1/00
Filed: 1985-02-14
Abstract: PURPOSE:To prevent a shock noise from being generated because of a large fluctuation of an output midpoint voltage of an SEPP amplifier stage at the release of muting after application of power by providing a pre-charge circuit controlling said midpoint voltage depending on a reference voltage. CONSTITUTION:A precharge circuit 17 is provided at the output midpoint B of the SEPP amplifier stage. The precharge circuit 17 is activated when a control signal is outputted from a muting signal generating circuit 15 at application of power and holds the potential of said midpoint B into a potential of a reference potential point A of a bias circuit 5. Through the constitution above, since the potential fluctuation of said midpoint B at the release of muting is suppressed, the generation of a shock noise due to rapid charge/discharge of an output capacitor 12 is prevented.
Patent JP-S52110574-A (JP)
Title: Semiconductor for high frequency
Inventor: OZAWA SHIGERU
IPC: H01L21/331
Filed: 1976-03-12
Abstract: PURPOSE: Highly reliable and easily usable high frequency semiconductor device is obtained having high output power without damage at the position where the stray capacitance is generated. 
     COPYRIGHT: (C)1977,JPO&Japio
Patent JP-H04251878-A (JP)
Title: Mirror supporting structure for raster scanning device and method for adjusting mirror angle using same
Inventor: YANAGISAWA KATSUYUKI
IPC: B41J2/44
Filed: 1991-01-28
Abstract: PURPOSE:To maintain the performance of adjusting the angle of a cylindrical mirror in a good state and also to surely correct the bus tilt of the cylindrical mirror itself based on the accuracy, etc., of parts. CONSTITUTION:One end part of the cylindrical mirror 5 is supported by a rotary supporting member 7 for supporting the reflection surface with two points, and also, the other end part of the cylindrical mirror 5 is supported by a rotary supporting member 8 for supporting the reflection surface with one point, and the other end part of the cylindrical mirror 5 is rotated in following to the rotation of the one end part of the cylindrical mirror 5, besides to this, with keeping the one end part of the cylindrical mirror 5 fixed, the other part is minutely rotated.