baber/WOPTO huggingface dataset:
Patent TW-508829-B (TW)
Title: Thin-film transistor
Inventor: OHKURA MAKOTO
IPC: H01L21/336
Filed: 2001-07-19
Granted: 2002-11-01
Abstract: The present invention relates to a thin film transistor carried on the insulation substrate. The thin film transistor has a semiconductor thin film, a gate insulation film, and gates. By controlling the curve of the impurity density in the semiconductor thin film, there will be peak values in the region outside the depth center of the semiconductor thin film, so as to get long-life and highly reliable thin film transistor for LCD.
Patent TW-I230639-B (TW)
Title: Electric soldering iron and its tip
Inventor: KAWAKATSU ICHIRO
IPC: B23K3/02
Filed: 2001-07-31
Granted: 2005-04-11
Abstract: The present invention provides an electric soldering iron which is excellent in oxidation resistance in a hot environment and achieves good heat conductivity without being chrome-plated. In the tip 3 made of copper or a copper alloy, the outer surface of the top portion 3a, except the solder-coated portion 9, is coated with a mixture of aluminum powder and flux. The surface is reformed into a Cu-Al alloy layer 10-1 which is high in aluminum concentration by melting aluminum powder alone in an inert gas atmosphere.
Patent TW-508411-B (TW)
Title: Scroll compressor
Inventor: SHIMADA MASAHIRO
IPC: F04C28/28
Filed: 2001-08-06
Granted: 2002-11-01
Abstract: A scroll compressor comprises a suction chamber and a compression chamber 48 formed between a fixed scroll with a spiral lap and a revolving scroll with a spiral lap for sequentially introducing refrigerant gas that is guided into the suction chamber to compression chamber 48 to be compressed with the oscillating motion of the revolving scroll 26. A release hole 62 and a valve chest 60 are continuously formed in the fixed scroll 24. A release control valve 58 is equipped with the valve chest 60 and a fluid in a compression chamber 48 is discharged to a discharge pressure chamber 18 when a pressure in the compression chamber 48 exceeds a set pressure. By means of the above structure, the scroll compressor of the present invention can further reduce re-expansion capacity without spoiling the rigidity of a fixed scroll.
Patent TW-502428-B (TW)
Title: Electrostatic discharge protection circuit for power source terminal with dual trigger voltages
Inventor: HUNG GEN-GANG
IPC: H02H9/00
Filed: 2001-09-03
Granted: 2002-09-11
Abstract: An electrostatic discharge (ESD) protection circuit for power source terminal with dual trigger voltages is disclosed in the present invention. In the invention, the first voltage source and the second voltage source are provided for the ESD protection circuit of the power source terminal. The ESD protection circuit of the power source terminal includes a control circuit and an ESD protection MOS device. When the electrostatic discharge occurs between the first voltage source and the second voltage source, the control circuit generates a substrate trigger voltage and a gate driving voltage. And, a bias is applied to the ESD protection MOS device. The gate drive voltage and the substrate trigger voltage of the ESD protection MOS device can reduce the required trigger voltage for conducting the parasitic BJT of the MOS device and can also increase the ESD endurance of the MOS device.
Patent TW-I237054-B (TW)
Title: Extension of catalyst cycle length in residuum desulfurization processes
Inventor: CHABOT JULIE
IPC: C10G45/04
Filed: 2001-09-07
Granted: 2005-08-01
Abstract: Solvent injection in amounts no greater than 2 wt% can favorably alter the way heavy metals, such as vanadium, are normally deposited in catalyst particles. Heavy metals may be stored on the catalyst in a more compact form, saving catalyst pore volume. Consequently catalyst cycle length is improved, since capacity for deposition is increased. The instant invention has also been demonstrated to control the rate of catalyst fouling by deposition of coke, or microcarbon residue (MCR). In the past, attempts to increase catalyst activity led to increased rates of catalyst fouling and shorter catalyst life. In the instant invention the rate of deposition of microcarbon residue is decreased, resulting in slower fouling of pores and increased cycle length.
Patent TW-I238352-B (TW)
Title: Register move operations
Inventor: ROTH CHARLES P
IPC: G06F9/34
Filed: 2001-10-05
Granted: 2005-08-21
Abstract: In one embodiment, a programmable processor is adapted to conditionally move data between a pointer register and a data register in response to a single machine instruction. The processor has a plurality of pipelines. In response to the machine instruction, a control unit directs the pipelines to forward the data across the pipelines in order to move the data between the registers.
Patent TW-521048-B (TW)
Title: Film transfer apparatus
Inventor: KOBAYASHI KENJI
IPC: B43L19/00
Filed: 2001-10-22
Granted: 2003-02-21
Abstract: The object of the present invention is to provide a mechanism consisted of a check claw and reverse rotation preventing teeth that can engage with each other in firm and reliable manner in order to prevent a reverse rotation of a tape take-up reel, and to only renew the check claw easily in a simple operation, when the check claw is broken or deformed that causes its functions to become incomplete. The solution of the present invention for achieving the object is that a check pin 23 inserted from the outer side of a cartridge unit 2 into a cylindrical retainer on which the take-up reel 8 is rotatably mounted is combined in one body rotationally with the take-up reel and the check pin 23 is engaged in a reverse rotation preventing manner in a tightly winding direction with respect to the cartridge unit 2.
Patent TW-509995-B (TW)
Title: Method for forming shallow trench isolations
Inventor: HUANG YI-MIN
IPC: H01L21/31
Filed: 2001-11-09
Granted: 2002-11-11
Abstract: In accordance with the present invention, a method for forming shallow trench isolations in semiconductor devices is disclosed. The method comprises the step of providing a semiconductor substrate. A dielectric stack with a plurality of dielectric layers of different etching selectivity from adjacent dielectric layers is formed on the semiconductor substrate. Then, a patterned photoresist is formed on the dielectric stack defining a plurality of trench openings. The dielectric stack is etched to expose the semiconductor substrate and transfer the trench openings into the dielectric stack by using the patterned photoresist as a mask. Next, the patterned photoresist is removed. Ion implantation is performed to increase dopant concentration around the trench opening in the semiconductor substrate. Then, shallow trench isolations are formed in the semiconductor substrate. The key aspect of the present invention is the increase of the dopant concentration in the substrate/gate dielectric interface by performing ion implantation in the process of creating shallow trench isolations. The increased dopant concentration in the substrate/gate dielectric (such as Si/SiO2) interface prevents dopant depletion and device threshold voltage (Vt) roll-off in a narrow width device.
Patent TW-592878-B (TW)
Title: Methods relating to constructing reciprocator assembly and producing a non-contacting alignment
Inventor: COREY JOHN A
IPC: F04B35/04
Filed: 2001-11-14
Granted: 2004-06-21
Abstract: A method of constructing a reciprocator and moving element for a reciprocator. Also, a method of producing a non-contacting alignment of relatively reciprocating elements.
Patent TW-527651-B (TW)
Title: Method for making a thyristor
Inventor: CHEN YEN-CHANG
IPC: H01L21/28
Filed: 2001-11-29
Granted: 2003-04-11
Abstract: A semiconductor substrate has at least one active area and a STI surrounding the active area. An N-well and an adjacent P-well are formed in the active area. A dummy gate is formed atop the border between the N-well and the P-well, while simultaneously forming gates for other MOS transistors on the semiconductor substrate. A spacer is formed on the periphery of each gate. Finally, an N-type ion implantation process and a P-type ion implantation process are performed to form a cathode and an anode for the silicon controlled rectifier device in the P-well and the N-well between the STI and the dummy gate.
Patent TW-511242-B (TW)
Title: Chip structure and process for making the same
Inventor: LIN MAU-SHIUNG
IPC: H01L21/768
Filed: 2001-12-14
Granted: 2002-11-21
Abstract: A chip structure comprises a substrate; a first stacked layer; a protective layer; and a second stacked layer, in which the substrate comprises a plurality of electronic elements arranged on the surface layer of the substrate, the first stacked layer is located on the substrate and comprises a dielectric structure body and a first wire structure body, in which the first wire structure body is intertwined in the dielectric structure body of the first stacked layer and the first wire structure body and the electronic elements are electrically connected, the protective layer is located on the first stacked layer and exposes the first wire structure body, and the second stacked layer is installed on the protective layer and at least comprises a second wire structure body electrically connected to the first wire structure body, in which the line thickness, line width and cross-section of the second wire structure body are individually larger than the line thickness, line width and cross-section of the first wire structure body.
Patent TW-561377-B (TW)
Title: Intelligent document management and usage method
Inventor: LIOU TZUNG-YUAN
IPC: G06F17/30
Filed: 2001-12-17
Granted: 2003-11-11
Abstract: The present invention is an intelligent document management and usage method, which includes the following steps: extracting at least one key word from each document as the attribute row corresponding to the document; next, providing a key word directory on the display screen for users' usage and management, wherein the key word directory includes several first key word directories, which is composed by the key word union contained in the document; when the user picks one of the first key word directory, it will display the document linkages contained in the first key word directory, and the parent hierarchy relation for the first key word directory with the second key word directory contained therein, wherein the second key word directory is composed by the union of the first key word director of the upper layer and the key words in all documents excluding the key words of the upper layer. In the user's operation of repetitively picking the key word directory of the lower layer, the user can pick the desired document if only one layer of key word directory displays the word linkage of the desired document by the user.
Patent TW-565731-B (TW)
Title: Liquid crystal display module
Inventor: OH JEONG-SEOK
IPC: F21V8/00
Filed: 2001-12-20
Granted: 2003-12-11
Abstract: Disclosed is a liquid crystal display module capable of minimizing thickness thereof. A light output surface of a light guiding plate for converting a linear light source output from the lamp in the form of planar light source is provided on the entire surface with a plurality of convex portions having a desired height. A prism sheet for controlling a path of the light output from the light guiding plate is laid on the light guiding plate, with the prism sheet being opposite to the plurality of convex portions. Accordingly, it is possible to uniformly control the brightness distribution of the light output from the light guiding plate without providing a separate diffusing plate between the light guiding plate and the prism sheet. In addition, since the plurality of convex portions which are formed integrally with the light guiding plate directly face with the prism sheet, the adherence between the light guiding plate and the prism sheet can be prevented. Therefore, the diffusing plate can be eliminated from the liquid crystal display module, thereby reducing the number of components, and thus minimizing the thickness of the liquid crystal display module.
Patent TW-514990-B (TW)
Title: MOS transistor with punchthrough stop and method for making the same
Inventor: TZENG HUNG-HUEI
IPC: H01L21/265
Filed: 2001-12-24
Granted: 2002-12-21
Abstract: A method for making a transistor having punchthrough stop at least comprises: forming a gate oxide layer on a semiconductor substrate; producing an inverted T-type gate on the gate oxide layer; performing a first ion implantation to form a first doped region in the semiconductor substrate and partially on the lower side of the inverted T-type gate; using the inverted T-type gate as a mask to perform a second ion implantation to form a second doped region in the semiconductor substrate as a LDD; forming a first sidewall spacer on the sidewall of the inverted T-type gate; and using the first sidewall spacer and the inverted T-type gate as a mask to perform a third ion implantation to form a drain and source in the semiconductor substrate.
Patent TW-537959-B (TW)
Title: Die assembly used for forming optical disc
Inventor: CHIHARA TOSHIHIRO
IPC: G11B7/26
Filed: 2001-12-25
Granted: 2003-06-21
Abstract: The present invention is provided for a die assembly used for forming an optical disc, which can equalize temperature of the die assembly surrounding a cavity for a product in order to improve the dimensional accuracy of the optical disc. The die assembly of the present invention has a cavity block and a core block which is provided to face toward the cavity block, and the cavity for a product is formed between the cavity block and the core block. Temperature controlling fluid paths for cooling liquid are provided in the cavity block and the core block. Furthermore, in a fluid path connecting portion which is provided in the portion in which a cooling power per unit area by the temperature controlling fluid paths should be reduced, the distance between the surface of the cavity for a product and the fluid path connecting portion is extended. As a result, the cooling power of the temperature controlling fluid paths is reduced by extending a distance for the heat conduction, and therefore, the temperature of the surface, of the cavity for a product can be adjusted to the optimum temperature.
Patent TW-I299331-B (TW)
Title: Purification of crude terephthalic acid and catalysts comprising carbon fibers which are suitable for this purpose
Inventor: MATHIAS HAAKE
IPC: B01J35/06
Filed: 2002-01-24
Granted: 2008-08-01
Abstract: A process for the purification of crude terephthalic acid comprises catalytic hydrogenation using a catalyst material (I) comprising a ca bon supported hydrogenation metal whereby the carbon support comprises carbon fibers. Independent claims are included for: (1) the catalyst material (I) whereby the carbon support has a BET surface area of less than 500 Micro 2>/g; (2) a reactor (II) containing a flat catalyst material in the form of cloth, textile and/or felt comprising a hydrogenation metal applied to carbon fibers and having at least two edges opposite to each other to which the catalyst material is stably affixed or containing the catalyst material in the form of parallel fibers or bands; and (3) a process for the selective hydrogenation of carbon-carbon double or triple bonds and/or hydrogenatable functional groups using the catalyst material (I) or reactor (II).
Patent TW-535291-B (TW)
Title: Semiconductor device and pattern layout method thereof
Inventor: HARAGUCHI YOSHITAKA
IPC: G09G3/00
Filed: 2002-01-31
Granted: 2003-06-01
Abstract: A semiconductor device and a pattern layout method thereof for promoting a semiconductor device used for driving a driver into a single-chip disposition. Within a driver for driving display device, wherein the driver has anode driver, cathode driver, and memory, the semiconductor device of the present invention uniformly divides anode driver areas 10, 12, 13, 16, which are connected to the memory, within a chip, and uniformly disposes SRAM 18, 19 adjacent to the uniformly divided anode driver areas 10, 12, 13, 16, respectively. As a result, a distribution of circuit becomes easier, and a chip size can be reduced.
Patent TW-593123-B (TW)
Title: Microelectronic spring with additional protruding member
Inventor: GRUBE GARY W
IPC: H01R12/57
Filed: 2002-04-11
Granted: 2004-06-21
Abstract: Various structural features for modifying the performance characteristics of cantilevered microelectronic spring structures are disclosed. Generally, the features comprise a protruding member mounted between a supporting substrate and the transverse cantilever beam of a microelectronic spring structure, at a distance spaced apart from the supporting structure from which the beam is cantilevered. The protruding member may be equal to the clearance under the beam, less than the clearance under the beam, or adjustable in height; and may be attached or mounted to either the beam or the substrate. The protruding member may be substantially rigid and incompressible, and shorter than the clearance under the beam or ""soft"" and compressible. The protruding member may comprise an electronic device attached to both the substrate and the beam. Additionally, the protruding member may be comprised of an adjustable pressure device.
Patent TW-564452-B (TW)
Title: Image display device
Inventor: MURATA HIROTAKA
IPC: H01J29/46
Filed: 2002-04-19
Granted: 2003-12-01
Abstract: The vacuum envelope of an image display device of the present invention comprises: a back base plate and a front base plate that are opposed to each other; and a side wall disposed between the back and font base plates. The inner surface of the front base plate is formed with an image display screen, while the inner surface of the back base plate is provided with a number of electron emitting elements for emitting electrons to the image display screen. A grid is disposed between the back and front base plates and connected to the back base plate. This grid has a greater heat expansion coefficient than that of the back base plate.
Patent TW-552742-B (TW)
Title: An integrated antenna for laptop applications
Inventor: FLINT EPHRAIM B
IPC: H01Q5/00
Filed: 2002-05-22
Granted: 2003-09-11
Abstract: The present invention relates to an antenna for integration into a portable processing device. The antenna includes an electronic display metal support frame for grounding a conducting element, a pair of radiating elements extending from the display frame, and a means for conducting a dual-band signal comprising a first component for carrying a signal connected to the first and second radiating elements and a second component for grounding the conducting means connected to the display frame.
Patent TW-535226-B (TW)
Title: Electrical device with needle electrodes and method for forming the same
Inventor: JENG SHR-JIE
IPC: H01L21/28
Filed: 2002-06-07
Granted: 2003-06-01
Abstract: An electrical device with needle electrodes includes a substrate and a plurality of needle electrodes. The needle electrodes are formed on a surface of the substrate. The surface of substrate has a plurality of contact pads. Each needle electrodes comprises a metal layer and a support layer. The metal layers are combined on the corresponding contact pads and extend with a curved shape. The support layers are formed at a side surface of the corresponding metal layers, so as to provide a good elastic support for the meta layers.
Patent TW-577020-B (TW)
Title: Integrated circuit device
Inventor: IKEDA KENJI
IPC: G06F15/78
Filed: 2002-07-11
Granted: 2004-02-21
Abstract: The integrated circuit device of the invention has the first memory, which can input and/or output data in between the first and the second memories, and the processing unit that can change at least one part of the data flow path. The processing unit has the followings: data processing section for processing the data input and/or output from the first memory; the first address output section disposed for outputting the first address of data inputted and/or outputted in between the first memory and the data processing section; and the second address output section for outputting the second address of data inputted and/or outputted in between the second memory and the first memory. By forming the control circuit of memory with the processing unit of which at least one part of the data flow path is variable or can be reconstructed, it is capable of constructing the super high speed buffer memory system, which is the most suitable for integrated circuit device to execute the processing in integrated circuit device.
Patent TW-I246663-B (TW)
Title: Method and system for detecting and eliminating fraud
Inventor: TANG JAMES
IPC: H04L9/32
Filed: 2002-07-19
Granted: 2006-01-01
Abstract: Disclosed is a method and system for detecting and eliminating fraud by verifying the identity of a requesting individual desiring to engage in a transaction as well as a method for authenticating individuals to become initially registered with the verification entity as a trusted individuals. The verification method includes receiving a token uniquely identifying a trusted individual that the requesting individual purports to be, as well as a verification image depicting the requesting user performing a secret gesture. The verification image is compared with previously stored data regarding the trusted individual, including a previously stored image of the trusted individual to verify if the requesting individual resembles the trusted individual and whether the requesting individual depicted in the verification image is performing the secret gesture associated with the trusted individual. The authentication method includes receiving an image of an individual seeking to be registered as a trusted individual and conducting an investigation into the individual seeking registration by identifying persons who would be likely to recognize the individual seeking registration and asking them to identify the individual depicted in the received image. If one or more persons recognize the individual seeking registration, the individual is authenticated and is registered as a trusted individual.
Patent TW-533239-B (TW)
Title: Method for accelerating separation of granular metallic iron from slag
Inventor: TSUGE OSAMU
IPC: C21B3/08
Filed: 2002-07-24
Granted: 2003-05-21
Abstract: A method for accelerating the separation of a granular metallic iron from slag, characterized in that, in a method for the production of a granular metallic iron comprising reducing and melting a raw material lump composed of an iron oxide containing material and a carbonaceous reducing agent, a solid mixture of the granular metallic iron formed by the above reduction and melting and a by-produced slag is quenched to thereby accelerate the separation of the granular metallic iron from the by-produced slag; the method can be used for producing a metallic iron being satisfactorily separation from slag and having an improved purity of iron.
Patent TW-558743-B (TW)
Title: Peeling method and method of manufacturing semiconductor device
Inventor: TAKAYAMA TORU
IPC: H01L21/84
Filed: 2002-08-14
Granted: 2003-10-21
Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.