baber/WOPTO huggingface dataset:
Patent TW-377356-B (TW)
Title: Process for purifying and isolating beta-anomer enriched 2'-deoxy-2',2'-difluoronucleosides
Inventor: CHOU TA-SEN
IPC: C07H19/04
Filed: 1995-11-14
Granted: 1999-12-21
Abstract: A process to purify and isolate a beta-anomer enriched nucleoside comprising: (a) providing a mixture containing R" and a beta-anomer enriched nucleoside of the formula wherein each X is independently selected from hydroxy protecting groups and R' is a nucleobase of the formula where W is an amino protecting group; and R" is a nucleobase of the formula where W' is an amino protecting group or hydrogen; in a high boiling solvent; (b) diluting the mixture with an organic solvent from the group consisting of ethers, esters and nitriles; (c) adding the diluted reaction mixture to aqueous acid; and (d) holding the acid mixture so prepared at a temperature from 70 degrees C to 100 degrees C until the product of formula IB, where W is now W', has precipitated.
Patent TW-353083-B (TW)
Title: Supported catalyst component, supported catalyst, their preparation, and addition polymerization process
Inventor: JACOBSEN GRANT B
IPC: C08F10/02
Filed: 1995-11-30
Granted: 1999-02-21
Abstract: A supported catalyst component comprising a support material and an alumoxane which comprises 15 to 45 wt% Al based on the total weight of the support material and the alumoxane, and in which less than 10% of the aluminum existed in the supported catalyst component can be extracted by using 10 ml of toluene per gram of the supported catalyst component to perform extraction at 90 DEG C for one hour; the supported catalyst component being obtained by the following method: (A) heating a support material containing alumoxane at 85 to 250 DEG C in an inert atmosphere for a period of time sufficient to fix the alumoxane on the support material.
Patent TW-289131-B (TW)
Title: A method of improving the properties of liquid phased deposited silica layer
Inventor: YEH CHING-FA
IPC: H01L21/208
Filed: 1995-12-20
Granted: 1996-10-21
Abstract: A method of improving the properties of liquid phased deposited silicalayer which is using the liquid phased deposited way to form the silicalayer on the base and then deal it with the plasma process.
Patent TW-284909-B (TW)
Title: Bipolar transistor and its semiconductor device
Inventor: HONDA HIROKI
IPC: H01L21/8249
Filed: 1996-01-22
Granted: 1996-09-01
Abstract: A bipolar transistor includes the first conducting substrate with the main surface, the second conducting collector area formed on the substrate, the first conducting base area formed on the surface of the collector area, the second conducting emitter area formed on the surface of the base area, the isolation layer formed on the first substrate with the first, the second, and the third openings connected to the collector area, the emitter area, and the base area, and the electrodes of the collector, the emitter, and the base located in the first, the second, and the third openings, respectively. Thecharacteristics of the transistor include the conducting impurity concentration of the collector is less than 5*10e-8 cm-3. The ratio of the length (L) and the width (S) of the second opening (L/S) must be larger than 10.
Patent TW-362308-B (TW)
Title: Signal processing method
Inventor: CHUN CHRISTOPHETR K Y
IPC: H03F3/343
Filed: 1996-09-05
Granted: 1999-06-21
Abstract: A signal processing circuit generates a bias signal that is used for biasing a comparator. An input signal is compared to the bias signal in order to reconstruct the input signal on an output of the comparator. The bias signal is generated by selecting the larger of a percent of the input signal or an offset signal that is larger than a minimum value of the input signal.
Patent TW-408208-B (TW)
Title: Construction method of granite stanchion
Inventor: TZENG SHING-TSUNG
IPC: E04F13/14
Filed: 1996-09-20
Granted: 2000-10-11
Abstract: This invention provides a kind of construction method of granite stanchion. Generally, the construction method includes the following procedure and features: (1) Application base; (2) jointing stanchion; (3) positioning top decor and (4) grouting. The granite stanchion is formed as per the aforesaid procedure, which the stanchion and the top decor members are one formation granite structure, so it won't waste time to adhere the granite slats piece by piece. Therefore, it could simplify the construction, save time and labor, strengthen the structure, exert quake-proof function, and avoid breakage of the stanchion of the stripped granite. Besides, for the base, stanchion and top decor members are joint in one formation to each other by insertion, thus the joint is excellent, which could eliminate the defect arouse from the joint and ensure an aesthetics appearance.
Patent TW-483891-B (TW)
Title: Quinoline and quinazoline derivatives inhibiting platelet-derived growth factor receptor autophosphorylation and pharmaceutical compositions containing the same
Inventor: KUBO KAZUO
IPC: C07D215/233
Filed: 1996-11-06
Granted: 2002-04-21
Abstract: The present invention relates to novel quinoline derivatives and quinazoline derivatives represented by the following formula (1): [wherein R1 and R2 are each independently H or C1-C4-alkyl, or R1 and R2 together form C1-C3-alkylene, X is O, S or CH2, W is CH or N, and Q is a substituted aryl group or substituted heteroaryl group] and their pharmaceutically acceptable salts, having platelet-derived growth factor receptor autophosphorylation inhibitory activity, to pharmaceutical compositions containing these compounds, and to methods for the treatment of diseases associated with abnormal cell growth such as tumors.
Patent TW-440958-B (TW)
Title: Formation process for shallow trench isolation layer
Inventor: WU KUEN-LIN
IPC: H01L21/31
Filed: 1996-11-19
Granted: 2001-06-16
Abstract: This invention provides a formation process for shallow trench isolation layer using silicon-rich-nitride as the stop layer for the shallow trench isolation process so that the selectivity of the stop layer and trench filling material can be increased and thus quality of the shallow trench process can be improved to avoid substrate being damaged during the planarization process. The above-mentioned silicon-rich-nitride (SRN) is composed by SixN4 with x ≥ 3 to ensure higher selectivity for SRN and filling oxide of the trench during the subsequent planarization process. The removal rate of SRN is smaller than that of silicon oxide, which prevents the overpolishing of SRN during planarization process and improves the quality of shallow trench isolation.
Patent TW-329546-B (TW)
Title: The semiconductor device and its manufacturing method
Inventor: OKUMURA YOSHIKI
IPC: H01L27/108
Filed: 1996-12-27
Granted: 1998-04-11
Abstract: A semiconductor device, which has stack capacitor for storing capacitance and is located on semiconductor substrate, includes data-maintaining portion for storing charge in stack capacitor and peripheral circuit portion for forming connecting action with data-maintaining portion. Its features are followed. The data-maintaining portion includes: - Form 1st portion of 1st interlayer insulating on substrate; - Electrically connect 1st bit line contact with bit line formed on 1st portion of 1st interlayer insulating and substrate. And through the 1st portion of 1st interlayer insulating has 1st BL buried layer inside with same material as BL; - Form 1st portion of 2nd interlayer insulating on 1st portion of 1st interlayer insulating; - Form storing node on 1st portion of 2nd interlayer insulating to consist the stack capacitor; - Form capacitor gate insulating to cover the surface of storing node; - Form plate electrode to cover storing node and capacitor gate insulating; - Form 1st connecting device for electrically connect storing node with substrate; - Form 1st portion of 3rd interlayer insulating on 1st portion of 2nd interlayer insulating; - Electrically connect metal line contact window with 1st metal line formed on 1st portion of 3rd interlayer insulating and plate electrode. And through the 1st portion of 3rd interlayer insulating has 1st metal buried layer inside; The peripheral circuit portion includes: - Selectively form 1st semiconductor region of 1st conductive and 2nd semiconductor region of 2nd conductive inside the semiconductor substrate; - The 2nd portion of 1st to 3rd interlayer insulating; - The 2nd metal line contact window is through the 2nd portion of 3rd interlayer insulating, which has 2nd metal buried layer inside, and connected with 2nd metal line; Electrically connect 2nd connecting device with 2nd metal buried layer of 2nd metal line contact window and 1st & 2nd semiconductor region; The 2nd metal line contact window has same depth with 1st metal line contact window.
Patent TW-378219-B (TW)
Title: Shrink films from propylene polymers
Inventor: CHEN MICHAEL CHIA-CHAO
IPC: B32B27/32
Filed: 1997-03-14
Granted: 2000-01-01
Abstract: Shrink films prepared from metallocene catalyzed propylene homopolymers and copolymers are provided. The films exhibit a unique balance of properties as compared to known shrink films including higher stiffness, tensile strength and moisture barrier, lower extractables, improved shrinkage and increased shrink tension. In addition, the shrink behavior of the film can be substantially tailored by modifying the amount of comonomer present in the propylene polymer.
Patent TW-370560-B (TW)
Title: Spark ignition motor fuel composition and method for lowering the vapor pressure of a hydrocarbon-alcohol blend
Inventor: PAUL STEPHEN F
IPC: C10L1/04
Filed: 1997-07-10
Granted: 1999-09-21
Abstract: A spark ignition motor fuel composition consisting essentially of: a hydrocarbon component containing one or more hydrocarbons selected from five to eight carbon atoms straight-chained or branched alkanes essentially free of olefins, aromatics, benzene and sulfur, wherein the hydrocarbon component has a minimum anti-knock index of 65 as measured by ASTM D-2699 and D-2700 and a maximum DVPE of 15 psi as measured by ASTM D-5191; a fuel grade alcohol; and a co-solvent for the hydrocarbon component and the fuel grade alcohol; wherein the hydrocarbon component, the fuel grade alcohol and the co-solvent are present in amounts selected to provide a motor fuel with a minimum anti-knock index of 87 as measured by ASTM D-2699 and D-2700, and a maximum DVPE of 15 psi as measured by ASTM D-5191. A method for lowering the vapor pressure of a hydrocarbon-alcohol blend by adding a co-solvent for the hydrocarbon and the alcohol to the blend is also disclosed.
Patent TW-505808-B (TW)
Title: A color liquid crystal substrate and a manufacturing method thereof
Inventor: SAKAI YASUTO
IPC: G02F1/133
Filed: 1997-05-30
Granted: 2002-10-11
Abstract: In a color liquid crystal substrate, in which a plurality of color filter elements are formed on a transparent substrate, a primary coating of an organic silicon compound containing oxide particles is formed on the color elements, and a secondary coating of a silicon dioxide is formed on said primary coating. Further, the oxide particles contained in the primary coating are concentrated and fill-in the recess portions defined among the neighboring color filter elements.
Patent TW-355796-B (TW)
Title: Method for operating a memory-cell arrangement
Inventor: WILLER JOSEF
IPC: G11C11/34
Filed: 1997-07-31
Granted: 1999-04-11
Abstract: A method for operating a memory-cell arrangement with MOS-transistors as memory-cells, said MOS-transistors have as gate-dielectric a 3-layer dielectric (5) with a first silicon-oxide layer (51), a silicon-nitride layer (52), and a second silicon-oxide layer (53), where each silicon-oxide layer is at least 3nm thick, a first threshold voltage of said MOS-transistor should correspond to a first logical value and a second threshold voltage corresponds to a second logical value so as to store digital data; through a full removal of the charge stored in the silicon-nitride layer is not possible due to the thickness of the silicon-oxide layer, the information stored in the memory-cell can be changed by applying a suitable voltage-level; it is used in the change of the threshold voltage that the electric field in the 3-layer dielectric would be distorted through the charges that are stored in said silicon-nitride layer.
Patent TW-470647-B (TW)
Title: Composition and pharmaceutical combination kit comprising formoterol and budesonide
Inventor: TROFAST JAN
IPC: A61P11/06
Filed: 1997-10-02
Granted: 2002-01-01
Abstract: The invention provides a composition or kit having as a first active ingredient formoterol, or a salt or solvate derivative thereof, and having as a second active ingredient budesonide, wherein the molar ratio of the first active ingredient to the second active ingredient is from 1:30 to 1:36, and the use of the composition and kit in the treatment of respiratory disorders.
Patent TW-393338-B (TW)
Title: Water distiller with improved automatic shutoff feature
Inventor: BELONGIA DAVID C
IPC: B01D1/00
Filed: 1997-11-05
Granted: 2000-06-11
Abstract: Disclosed is a water distiller of the type having a raw water container, a heater for boiling water in the container and a thermostat for disabling the heater. In the improvement, the container includes a water cavity having a upper perimeter around a panel and the heater is mounted in heat-transfer relationship to the panel. The container includes a thermostat in heat-transfer relationship to the panel and connected to the heater. When water diminishes to a level at which the panel is no longer submerged, the panel temperature rises and trips the thermostat. A heater retention member secures the heater to the panel and a reflective heat shield has a first portion spaced from the retention member. The heater is between the panel and the first portion. The thermostat projects through an aperture in the retention member and an opening in the heat shield so that such thermostat is in intimate, heat-transfer relationship to the panel.
Patent TW-372901-B (TW)
Title: Chemical and mechanical polishing apparatus
Inventor: IZUMI SHIGETO
IPC: H01L21/321
Filed: 1998-02-05
Granted: 1999-11-01
Abstract: A CMP apparatus has an extended life and improved polishing accuracy and is capable of not only preventing a wafer 100 from dashing out of a carrier 1 and being damaged or wound, but also adjusting the elasticity of a pressure pad to a desired value in a fine manner. The CMP apparatus includes the carrier 1, a suction mechanism 4 having an air passage 40 disposed to open on a lower surface of the carrier 1 for drawing air, and a surface plate 300 having a hard polishing pad 220 and soft pad 210 adhered thereto. The pressure pad in the form of a porous thin Teflon layer 7 having a thickness of 5 mm is adhered to a lower surface of the carrier 100 which holds the wafer 100. Thus, the rear surface of the wafer 100 is maintained in a horizontal state by the Teflon layer 7, and the warpage and/or irregularities in the thickness of the wafer 100, which appear on the front surface of wafer 100, can be absorbed by the soft pad 210 and the hard polishing pad 220.
Patent TW-577925-B (TW)
Title: Processes for producing sugar nucleotides and complex carbohydrates
Inventor: KOIZUMI SATOSHI
IPC: C12P19/30
Filed: 1998-03-12
Granted: 2004-03-01
Abstract: A process for producing a sugar nucleotide characterized by using as an enzyme source an optionally processed culture of a microorganism capable of producing the sugar nucleotide from a nucleotide precursor and a sugar, effecting an enzymatic reaction in an aqueous medium containing the enzyme source, the nucleotide precursor and the sugar to thereby accumulate the sugar nucleotide in the medium, and taking up the sugar nucleotide from the medium; and a process for producing a complex carbohydrate characterized by using as enzyme sources an optionally processed culture of a microorganism capable of producing a sugar nucleotide from a nucleotide precursor and a sugar, and an optionally processed culture of a microorganism or animal cells capable of producing the complex carbohydrate from the sugar nucleotide and a complex carbohydrate precursor, effecting enzymatic reactions in an aqueous medium containing these enzyme sources, the nucleotide precursor, the sugar and the complex carbohydrate precursor to thereby accumulate the complex carbohydrate in the medium, and taking up the complex carbohydrate from the medium.
Patent TW-392159-B (TW)
Title: Transistor, transistor array and non volatile semiconductor memory
Inventor: KONDO SADAO
IPC: H01L21/8247
Filed: 1998-04-13
Granted: 2000-06-01
Abstract: The present invention provides a memory cell of long life, less dispersion in structure and writing characteristics, high-speed operation, microstructuring possibility power problems in excessive erasing and simple structure. On a channel region 4, floating gate electrodes 5 and 6 are provided via a gate insulating film 8. On each of the floating gate electrodes, a control gate electrode is formed via a tunnel insulating film 10. A central part of the control gate electrode is allocated on the channel region 4, which constitutes a selection gate 11. A selection transistor 12 is constituted with each of source/drain regions 3 sandwiching the selection gate 11 and the selection gate 11. A coupling capacity between the floating gate electrode and the control gate electrode is set so as to be very much larger than that between the floating gate electrode and a substrate 2.
Patent TW-403846-B (TW)
Title: Optical fiber holder and end-face preparation tool
Inventor: WIEGAND GORDON
IPC: B24B41/06
Filed: 1998-04-14
Granted: 2000-09-01
Abstract: A tool for preparing an optical fiber end-face includes a station (502) having a fiber bender (518) and a scribe (520) for cleaving a fiber. The station (502) may include a polishing surface (512), a cleaver door (508) rotatable between an open position and a closed position covering a shard collector (522), and a mount (514) for releasably attaching a fiber handling tool or puck (506). The puck (506) includes a body (530), a latch (532) attached by a hinge (534) to the body (530), and a face (540) comprising a plate pivotally attached to an end of the body (530) and having a fiber port (550) extending through the plate. The body (530) of the puck (506) includes a nest for receiving a fiber holder (172) for securing a fiber (178) with an end of the fiber extending through the port (550) of the face (540). The face (540) of the puck (506) can be inserted into guide tracks (516) adjacent the scribe (520) for cleaving the fiber.
Patent TW-449868-B (TW)
Title: Method for forming field oxide of semiconductor device and the semiconductor device
Inventor: JANG SE-AUG
IPC: H01L21/76
Filed: 1998-04-20
Granted: 2001-08-11
Abstract: A method for forming a field oxide of a semiconductor device and the semiconductor device. In order to form the field oxide, first, an element isolation mask is constructed on a semiconductor substrate. Then, a nitride spacer is formed at the side wall of the mask. At this time, a nitrogen-containing polymer is produced on the field region. The exposed region of the semiconductor substrate is oxidized at a temperature of 1,050 to 1,200 DEG C to grow a recess-oxide while transforming the nitrogen-containing polymer into a nitride. Thereafter, the recess oxide is removed, together with the nitride, to create a trench in which the field oxide is formed through thermal oxidation. Therefore, the method can prevent an FOU phenomenon upon the growth of a field oxide and improve the field oxide thinning effect, thereby bringing a significant improvement to the production yield and the reliability of a semiconductor device.
Patent TW-401621-B (TW)
Title: Semiconductor device and its manufacture method
Inventor: OKADA NORIO
IPC: H01L23/522
Filed: 1998-06-19
Granted: 2000-08-11
Abstract: This invention is a semiconductor device having a plurality of wiring on the semiconductor substrate. It is provided with a first insulating film which covers the surface of all the aforesaid wiring, and a second insulating film containing air gaps which is formed in between the mutual adjacent aforesaid wirings. This method of manufacturing the semiconductor device comprises a process whereby the first insulating film is formed in such a manner to cover the surface of the plurality of wiring formed on the semiconductor substrate; a process whereby the second insulating film containing air gaps is formed in between the mutual adjacent aforesaid wirings. Here, the first insulating film is formed by means of the plasma CVD or spin coating methods, and the second insulating film is formed by the means of the plasma CVD, the spin coating, the bias CVD, the sputtering or similar methods.
Patent TW-441119-B (TW)
Title: Dark current reducing guard ring
Inventor: BEILEY MARK A
IPC: H01L31/062
Filed: 1998-07-14
Granted: 2001-06-16
Abstract: A photodiode is provided. The photodiode includes an insulative region (IR) that permits passage of light therethrough. The photodiode also includes a substrate region of a first conductivity type and a well region of a second conductivity type. The well is formed within the substrate, beneath the IR. The well is demarcated from the substrate by a first surface. The photodiode further includes a heavily doped region (HDR) of the second conductivity type. The HDR is formed within the IR at a first position. The first surface meets the HDR at substantially the first position.
Patent TW-416057-B (TW)
Title: Memory-cell device and its production method
Inventor: RAMCKE TIES
IPC: H01L27/10
Filed: 1998-08-26
Granted: 2000-12-21
Abstract: Between word-lines and bit-lines, which extend transversely to said word-lines, are connected some resistors, which have higher ohms than said word-lines and bit-lines. Said bit-lines are connected respectively with a read-amplifier, through which the potential on each bit-line can be adjusted to a reference-potential and on which an output-signal can be picked up. If one word-line is selected and all other word-lines are at said reference-potential, then the resistance-valve of said resistor let itself be read from said output-signal, which corresponds to an information.
Patent TW-389924-B (TW)
Title: Structure and method for connection of an electrical component to an electromagnetic relay
Inventor: DONEGHUE JEFFREY A
IPC: H01H49/00
Filed: 1998-12-22
Granted: 2000-05-11
Abstract: An electromagnetic relay including a base defining a bottom plane; an electromagent assembly mounted on the base, the electromagnet assembly comprising a bobbin, a core and at least one winding about the core; an armature supported to be movable about a predetermined point for movement between two contact operating positions; at least one contact assembly for selectively providing one of an open and closed circuit; and at least one terminal member mounted on the base having a distal end for electrically connecting an end of the winding with a source of energy, and a proximal end formed by at least one depending leg to define a slot for receiving at least one lead of an electrical component.