Patent SG-11201805580Q-A (SG)
Title: Boron nitride material and method of preparation thereof
Inventor: TAY YINGJIE ROLAND
IPC: C01B6/11
Filed: 2017-01-09
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 1111111101111011101010111110101111101110111011111111111111011011111101111011111 International Bureau ... .1 j ..... .....!;,,, (10) International Publication Number (43) International Publication Date WO 2017/119851 Al 13 July 2017 (13.07.2017) WI P0 I P CT (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every C23C 16/34 (2006.01) CO1B 6/11 (2006.01) kind of national protection available): AE, AG, AL, AM, C23C 16/36 (2006.01) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (21) International Application Number: DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, PCT/SG2017/050011 HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, (22) International Filing Date: KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, 9 January 2017 (09.01.2017) MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (25) Filing Language: English RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, (26) Publication Language: English TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: 10201600155R 8 January 2016 (08.01.2016) SG (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (71) Applicant: NANYANG TECHNOLOGICAL UNIVER- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, SITY [SG/SG]; 50 Nanyang Avenue, Singapore 639798 TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (SG). TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FL FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (72) Inventors: TAY, Yingjie Roland; c/o Nanyang Technolo gical University, 50 Nanyang Avenue, Singapore 639798 LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CL CM, GA, GN, GQ, (SG). LI, Hongling; c/o Nanyang Technological Univer- GW, KM, ML, MR, NE, SN, TD, TG). sity, 50 Nanyang Avenue, Singapore 639798 (SG). TSANG, Siu Hon; c/o Nanyang Technological University, Published: 50 Nanyang Avenue, Singapore 639798 (SG). TEO, Hang with international search report (Art. 2 1 (3)) Tong Edwin; c/o Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (SG). (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; P.O Box 1088, Rochor Post Office, Rochor Road, Singa- pore 911833 (SG). (54) Title: BORON NITRIDE MATERIAL AND METHOD OF PREPARATION THEREOF FIG. 1E ve 8 .- '1A-‘3,—• ..., 0 .,,,,,,.., 10 ,,,, tir VP' AV 'lir —\"*. • h-BN Il .4 Me a l\ • ifir s •-(3/ 3 13 •.. 0** \ :, v . lir kin ( sum, a 2 .1, 0 ,,, ,,• co a --. sr- . tz. 13.04 11 11 L ---- (57) : A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. .::::) The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron ni - el tride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and tri- O ethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nan- otubes and porous foam.