baber/WOPTO huggingface dataset:
Patent JP-S5692372-A (JP)
Title: Power engine using high-pressure air
Inventor: SHIMIZU YOSHIO
IPC: F03G3/00
Filed: 1979-12-25
Abstract: PURPOSE: To obtain a power from a motion of a heavy-weight object by arranging a high pressure gas vessel on and under a heavy-weight object and causing each high- pressure gas vessel to act on a fall motion of a heavy-weight object.  
     CONSTITUTION: A high-pressure gas vessel 4 is provided on the upper part of a heavy-weight object 6 and a parent piston 18 is installed on the lower part of the heavy-weight object 6. Inside the piston 18, a high-pressure gas chamber 17 and a piston 15 are provided. A fixed piston 14 is set to the said piston 15 and the piston 14 is fixed on the lower part of the parent piston 18 by means of a branch tube. In addition, a piston 11 is mounted on the piston 15. On the upper part of the parent piston 18, a triangular arm 16 which conducts chain belt 32 is provided. The heavy- weight object is lifted upto where a piston for a high-pressure gas vessel contracts and then is released to drop. A piston 8 acts on the piston 11, compressing the high-pressure air chambers 12, 17 and a high-pressure air source tank 19. On account of a repulsive force generated by the mentioned compression, the heavy- weight object again ascends, compressing a high-pressure gas vessel and dropping.  This process is repeated maintaining a vertical motion. The vertical motion of the  parent piston drives a chain through the intermediary of the triangular arm, resulting in the rotation of a generator. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-H0454927-A (JP)
Title: Bathroom
Inventor: KAGAWA MINORU
IPC: A47K4/00
Filed: 1990-06-26
Abstract: PURPOSE:To control a space to be reduced and discharge water from a dressing bowl in good appearance without being disturbed by the dressing bowl by supporting the dressing bowl set near a bathtub, rotatably with a vertical support, to form a drain passage in the vertical support, and by communicating the drain passage with the drain course of the dressing bowl. CONSTITUTION:At the intermediate section of a bathroom, a vertical support 2 is set between a ceiling and a floor lower-section, and on the vertical support 2, a dressing bowl 3 is supported horizontally and rotatably on a proper level. By moving the dressing bowl 3 rotationally on the vertical support 2, the bowl 3 is separated from a bathtub 1 and is moved to the side of a bathing place 7, and nobody is to be disturbed by the dressing bowl 3 at the time of taking a bath. By moving the bowl 3 rotationally on the vertical support 2 so that the bowl 3 may come close to the side of the bathtub 1, a space on the side of the bathing place 7 is widened and washing work in the bathing place 7 is not disturbed by the dressing bowl 3. In the vertical support 2, a hot-water feeding pipe 8 and a drain pipe 9 for a drain passage 4 are arranged, and by communicating the drain passage 4 with the drain course 5 of the dressing bowl 3, the drain pipe of the bowl 3 is served as the vertical support 2, and appearance is enhanced and drainage composition is simplified.
Patent JP-H0612090-A (JP)
Title: Speech learning system
Inventor: KOGA SHINJI
IPC: G10L15/06
Filed: 1992-06-26
Abstract: PURPOSE:To enable high-accuracy learning by invetigating whether learning data are suitable for learning a standard model or not for the unit of a phoneme. CONSTITUTION:At a feature analysis part 11, a speech signal S is converted to a feature vector time sequence V by using a mel cepstrum method. At a recognition part 13, the feature vector time sequence V and a standard model P in a standard model storage part 12 are inputted, the feature vector time sequence V is divided for the unit of music by observation, similarity gn (n=1, 2...N; N is the number of phonemes) is obtained by forward/backward algorithm described in a material 4 while using the standard model corresponding to the phoneme for feature vector time sequences Vn (n=1, 2...N) in respective phoneme blocks to output as a similarity sequence G={g1, g2...gn}. At a learning part 14, the feature vector time sequency V and the similarity sequence G are inputted and when each similarity gn is larger than a fixed value K decided in advance, learning is performed by using the feature vector time sequence V.
Patent JP-H0728220-A (JP)
Title: Method for supplying liquid replenishment to photosensitive material processing device
Inventor: KANEKO MASATOSHI
IPC: G03D3/06
Filed: 1993-07-07
Abstract: PURPOSE:To reduce the amt. of a liq. replenishment to be supplied without deteriorating processing performance. CONSTITUTION:The preset amt. XE of a liq. replenishment is supplied in step 200, and a supply timer is started (step 202). The dilution rate of liq. replenishment (ratio of supplied developer to water) in replenishment is equalized with that in processing at this time. Whether the supply to the film processing is needed or not is determined in step 204, and the time of the timer is confirmed in step 206. When supply is to be conducted, the liq. replenishment is supplied in the amt. X for evaporation in step 208, and integrated value XS integrated in step 210. A necessary supply X for processing is calculated in step 214, and the supply X is deducted from the integrated value X Sin step 216. Whether the supply is short or not is determined (step 216) from the difference, and only the amount of shortage is supplied when the integrated value XS is shortage.
Patent JP-S5692406-A (JP)
Title: Film thickness measuring method
Inventor: FURUMIYA SATOSHI
IPC: G01N23/207
Filed: 1979-12-26
Abstract: PURPOSE: To measure the film thickness of any crystal without destruction, by measuring the integral diffraction strength of each crystal of the crystal substance and the crystal film having lattice mismatching and by obtaining the radio of this strength.  
     CONSTITUTION: Crystal film 2 is grown epitaxially on crystal substance 1, and lattice mismatching is generated between them. The ratio of the value, which is obtaind by integrating diffraction X rays of crystal film 2 for all film pressure, to the value obtained by integrating the diffraction X-ray strength from crystal substance 1 for the substance depth of permeation and reflection of X rays is obtained. This ratio has a fixed relation for the thickness of crystal film 2, and thus, the thickness of crystal film 2 is measured. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-H0460386-A (JP)
Title: Aluminum fin material
Inventor: ISHIKAWA KAZUNORI
IPC: F28F21/08
Filed: 1990-06-26
Abstract: PURPOSE:To provide excellent fin strength, conductivity and to improve performance of a heat exchanger by using Al alloy containing 0.2wt.% or less of Si, 0.3-1.5wt.% of Fe, and 0.05-0.5wt.% of Mg in a core material and unavoidable impurities in the residual Al. CONSTITUTION:In a fin material made of a brazing sheet in which Al-Si alloy brazing materials are cladded on both side surfaces of a core material, Al alloy containing 0.3wt.% of Si, 0.3-1.5wt.% of Fe, and 0.05-0.5wt.% of Mg in the core material and unavoidable impurities in the residual Al is used. Thus, a fin strength after brazing, sacrificing operation are equivalent to those or more of a conventional material, excellent conductivity is provided, and performance of a heat exchanger can be remarkably improved.
Patent JP-H0719787-A (JP)
Title: Heat transfer pipe for heat exchanger
Inventor: MINAMOTO KENKI
IPC: F28F19/06
Filed: 1993-07-07
Abstract: PURPOSE:To make a corrosion resistance excellent, to make the adhesion of a protective film to the main body of a pipe high and to reduce the wear of the protective film due to washing or the like. CONSTITUTION:An oxide film is formed in a thickness of 70 to 2000Angstrom  on the inner surface of the main body of a pipe constituted of a copper alloy, by subjecting the main body of the pipe to heat treatment, and a protective film is formed in a thickness of 2 to 35mum on the surface of the oxide film. The protective film contains Fe of 15wt.%. The oxide film contains an additive element of which the enthalpy of formation of an oxide is -169kj/mol or below, and the content of this element is set so that the ratio (IxeICu) between the main peak intensity Ix of the additive element and the main peak intensity ICu of Cu be 0.45 or above according to an analysis by an X-ray photoelectron spectroscopy at the surface of the oxide film.
Patent JP-S6229319-A (JP)
Title: Digital-analog conversion circuit
Inventor: SOFUE IKUO
IPC: H03M1/66
Filed: 1985-07-30
Abstract: PURPOSE:To provide an optional resolution with simple constitution by providing a post-stage analog multiplexer using a digital signal to select and output one level voltage among plural levels by a post-stage voltage division circuit. CONSTITUTION:The post-stage analog multiplexer 4 inputs a voltage being eight divisions from two voltages outputted from the pre-stage analog multiplexer 4 and outputs one of them. On the other hand, the analog multiplexers 2, 4 have a very short switching time and even when 2-stage of multiplexers are connected, the operating time of the entire conversion circuit depends on one switching time, the entire operating time is very short to attain high speed operation. In connecting plural sets each consisting of the pre-stage voltage division circuit 1 and the pre-stage analog multiplexer 2 in cascade, the resolution is improved depending on the number of sets. The resolution is adjusted minutely by changing the number of divisions of the voltage division circuit 1 or 3.
Patent JP-H0461747-A (JP)
Title: Negative electrode for lithium secondary battery
Inventor: IIJIMA TAKASHI
IPC: H01M4/583
Filed: 1990-06-28
Abstract: PURPOSE:To enhance the stability of the discharge capacity for repeated charging/discharging by using carbon fiber made from mesophase pitch as starting material, and therefrom selecting specific carbon fiber. CONSTITUTION:A neg. electrode concerned uses an active substance which is carbon fiber of specific structure. That is, the carbon fiber has properties such that the lattice surface spacing (d002) as crystallite parameter due to X-ray diffraction method ranged 0.338-0.343nm, the size (Lc) of the crystallite in the c-axis direction ranges 10-30nm, the orientation factor (FWHM) ranges 7-20deg., and the mean length in fiber cross-section direction of the graphite crystallite stretching long in the fiber axis direction ranges 20-100nm. In this carbon fiber, the graphite crystallite is surrounded by amorphous portion, which absorbs expansion/contraction of the graphite crystallite elastically, so that macro- structural destruction of carbon fiber will not generated. This provides a large discharge capacity and ensures high stability of discharge capacity for repeated charging/discharging.
Patent JP-S5792151-A (JP)
Title: External parts for pocket watch
Inventor: ITOU TAKESHI
IPC: C22C19/05
Filed: 1980-11-28
Abstract: PURPOSE: To obtain the titled inexpensive external parts with superior corrosion resistance by adding Cr, Mo and Cu to Ni as a base in a well-balanced state, adding a specified amount of Fe while maintaining the corrosion resistance, and further adding V to make the grains fine.  
     CONSTITUTION: To Ni as a base are added, by wt., 16W25% Cr, 5W30% Mo, 1W4% Cu, 5W10% Fe, <0.03% C, <0.5% Si, <0.4% V, <1% Mn and <1% Ti, Nb or Ta, or <2% in total of two or more among Ti, Nb and Ta. Thus, to Ni with superior corrosion resitstance are added Cr with superior corrosion resistance under oxidizing conditions and Mo and Cu with superior corrosion resistance under nonoxidizing condictions, and in order to use the elements as a ferroalloy, Fe is added to reduce the cost. C, Si, V, Ti, etc. added by such very small amounts maintain the corrosion resistance after brazing. 
     COPYRIGHT: (C)1982,JPO&Japio
Patent JP-H0457161-A (JP)
Title: Medical information managing system
Inventor: SAKANIWA KAZUHIKO
IPC: G06Q50/10
Filed: 1990-06-27
Abstract: PURPOSE:To recognize status at a resident side by intention from a center side by reading out data stored in a memory means in terminal equipment provided at the resident side by making access from the center side, and sending the present status of a user to the center side via an image transmission means. CONSTITUTION:The data of a vital sensor is added on a second adaptor 7, and is stored in a RAM 26. When it is stored in an EPROM 27, a switch 37 is depressed, and when it is stored in an IC card 13, a switch 38 is depressed. Registration data is diagnosed by a medical doctor by bringing the IC card into a center 1, and reading it with a R/W 3, and also, is registered as the history of the user oneself by sending to a host computer 2, and is held as a data base, then, it can be retrieved at need. Speech can be performed by performing automatic dial and connection to the center 1 by depressing the switch 34, and the status of the user can be confirmed by driving a video telephone 10 based on judgement at the center side when the emergency switch 33 is depressed.
Patent JP-2000069173-A (JP)
Title: Method, device, and system for calling
Inventor: BAIYOR ROBERT J
IPC: H04Q7/38
Filed: 1999-06-15
Abstract: PROBLEM TO BE SOLVED: To actualize the concurrent calling of multiple independent transmission call legs by allowing a mobile exchange center to perform routing by processing plural secondary telephone numbers so that respective transmission call legs are mutually different according to timing delay parameters corresponding to the secondary telephone numbers when receiving the incoming call legs for specifying primary telephone numbers. SOLUTION: A wired exchange center 205 or mobile exchange center 215 having received a notice of call addressed to a primary telephone number sends a request for a calling list including a secondary telephone number regarding the primary telephone number to a data base 220, which sends back secondary telephone numbers and a list containing timing delay parameters corresponding thereto. Then the wired exchange center 205 or mobile exchange center 215 starts the processing and routing of the respective transmission call legs with the delay in accordance with the timing delay parameters at the time.
Patent JP-H1022428-A (JP)
Title: Semiconductor device
Inventor: KUWABARA HEIKICHI
IPC: H01L23/473
Filed: 1996-06-28
Abstract: PROBLEM TO BE SOLVED: To maintain a semiconductor chip at a low temperature, in a semiconductor device in which coefficients of linear expansion of an insulating layer and a module board are set to values proximate to that of silicon constituting the semiconductor chip. SOLUTION: A refrigerant chamber 11 is provided directly in contact with a surface of a module board 6 opposite to a surface where a semiconductor chip (IGBT element 2) is arranged. A nozzle 18 for feeding a refrigerant into the refrigerant chamber 11 is provided. The nozzle 18 is arranged at a position such that a refrigerant flow ejected from the nozzle 18 reaches a portion on the back side of the module board 6 at the portion where the semiconductor chip (IGBT element 2) is arranged.
Patent JP-H0923247-A (JP)
Title: Signal slice circuit
Inventor: ONISHI MANABU
IPC: H04L25/03
Filed: 1995-07-04
Abstract: PROBLEM TO BE SOLVED: To allow the circuit to rapidly trace a signal slice level against the fluctuation of a reception signal. SOLUTION: A series circuit consisting of a resistor R2 and a switch S1 is connected in parallel with a resistor R1 of an integration circuit consisting of the resistor R1 and a capacitor C, a rectangular wave signal on which an information signal is superimposed is fed to the integration circuit to generate a slice level, and a differential amplifier 102 obtains the information signal resulting from subtracting the slice level signal from the reception signal. Then an integration circuit time constant switching signal is generated based on the information signal and fed back as an on/off control signal of the switch S1.  At the start of operation, and when level fluctuation is in existence in the operating signal, the switch S1 is closed to reduce the time constant, the slice level is rapidly corrected and after the correction, the switch S1 is open to increase the time constant thereby making the level stable.
Patent JP-S5871271-A (JP)
Title: Lift for agricultural tractor
Inventor: SUZUKI SADAO
IPC: B66F9/12
Filed: 1981-10-22
Abstract: PURPOSE:To obtain a selective carrier lift along a mast by cusing pulleys and a chain, whose fore end is formed into special structure, and by making said end freely attachable to the chain or the mast. CONSTITUTION:A mast 16 is supported by a three-point link located at a tractor rear end, and it moves up and down by means of a lift arm 6. A vertically moving frame 25 that is supported by a chain 29 is installed on the vertical mast 16 moving free. The chain 29 is hung on pulleys 23 and 31, whereas a joint 51, or an end of the chain 29, is attached to the mast 16 or the chain 29. By connecting the said joint 51 to the mast 16, the lift of a carrier 55 can be trebled, while by connecting the joint 51 to the chain 29 the lift can be doubled. In addition, by moving the pulley 23 upward in this state the carrier 55 can be lifted as much as the lift of the mast 16. Thus, the lift of the carrier 55 along the mast 16 can be selected optionally.
Patent JP-S5692290-A (JP)
Title: Preparation of 7-amino-3-substituted methylcephem carboxylic acid, its salt or ester
Inventor: SADAKI HIROSHI
IPC: C07D501/04
Filed: 1979-12-27
Abstract: PURPOSE: To obtain the titled compound useful as an intermediate for preparing a cephalosporin compound, by reacting a 7-amino-3-substituted methylcephem carboxylic acid or a salt thereof with an aromatic hydrocarbon compound, etc. in an organic solvent in the presence of a specific acid.  
     CONSTITUTION: A compound of formula I (R 1  is H or lower alkoxyl; X is acyloxy or carbamoyloxy which may be substituted) or a salt thereof is reacted with a compound of the formula R 2 -H (R 2  is aromatic hydrocarbon group or aromatic heterocyclic ring which may be substituted) in an organic solvent, e.g. an organic carboxylic acid, in the presence of a protonic acid, e.g. sulfuric acid or sulfonic acid, a Lewis acid or a complex compound thereof, e.g. BF 3  or ZnCl 2 , and if necessary esterified to give a compound of formula II, a salt or ester thereof.  
     EFFECT: High yield and purity with an industrial and easy operation. 
     COPYRIGHT: (C)1981,JPO&Japio
Patent JP-S5871558-A (JP)
Title: Sealed type organic electrolytic battery
Inventor: TAKEDA KAZUTOSHI
IPC: H01M2/06
Filed: 1981-10-22
Abstract: PURPOSE:To obtain a sealed type organic electrolytic battery with large battery capacity and excellent leakageproofness and long-term preservation and use it as an electronic wristwatch, a portable electronic computer, a camera, and a hearing aid by adopting the battery structure in which a ring-type ceramic body is used as an insulating sealing material. CONSTITUTION:In the figure, 24 is a separator made of polypropylene and 25 is an electrolyte holding material, made of polypropylene. 26 is a negative electron can and made of Kovar either of 42 or 426 alloy. 27 is a grid that is deposited on the inner surface of the negative electrode can 26 and a part of the lithium sheet 31 of a negative electrode is press-bonded on the surface of this grid. 28 is a ring-type ceramic body which seals the negative electrode can 26 on the inner lower part and a metallic case 29 made of Kovar and either of 42 or 426 alloy on the outer side, respectively. Since the thermal expansion coefficient of these Kovar and 42 and 426 alloys approximates to that of ceramic, the sealing section will not be damaged even if a heet shock is applied to it.
Patent JP-S5694642-A (JP)
Title: Processing device of wafer
Inventor: NANKOU SUSUMU
IPC: H01L21/304
Filed: 1979-12-27
Abstract: PURPOSE:To raise the rate of processing and the quality of processed wafers by taking out the sheets of wafer one by one from a cartridge, processing the main surface thereof, drying the same by heating, jetting then a gas thereon for purification and housing one by one into another cartridge. CONSTITUTION:Each time when a stand 15 is lowered by one pitch, the wafer is pushed out one by one from the cartridge 14 and put on a moving plate 19. The plate 19 moves along a prescribed route, sending the wafer to a cleansing mechanism. The wafer 13 is attracted on to a spinner 24 and cleansed by pure water supplied 26 with a rotated brush 25. Next, the plate 19 transfers the wafer on to a conveyor 13, which puts the wafer on to the board 32 of a purifying mechanism 11 through a drying furnace 30. There a gas for purification is jetted from a pipe 33  and collected into a pipe 37. After the purification, N2 is jetted from the slant  orifice 38 of the board 32 and the wafer 13 is carried to a cartridge 44 and housed  therein one by one sequentially. The drying furnace 30 and the purifying mechanism 11 are covered with a cover 41 having a cavity inside, while cooling is made  by flowing water 42. By performing a series of operation automatically by this constitution, the quality of the wafers is stabilized and the productivity is improved.
Patent JP-H04367233-A (JP)
Title: Field-effect semiconductor device
Inventor: SAWADA MINORU
IPC: H01L21/338
Filed: 1991-06-13
Abstract: PURPOSE:To obtain the title device wherein a source resistance can be reduced further, an extremely large mutual conductance can be obtained and a noise figure is extremely low by a method wherein the In molar composition of an InxGa1-xAs graded channel layer is made larger on the side of a GaAs buffer layer than that on the side of a GaAs layer. CONSTITUTION:An undoped GaAs buffer layer 2, a one-conductivity-type InxGa1-xAs graded channel layer 3 and a one-conductivity-type GaAs cap layer 5 are laminated sequentially on a semi-insulating GaAs substrate 1. The following are formed: a source electrode 6 and a drain electrode 7 which have been connected to the one-conductivity-type GaAs cap layer 5; and a gate electrode 8 which has been arranged and installed between the electrodes 6, 7. In such a field-effect semiconductor device, the In molar composition (x) of the InxGa1-xAs graded channel layer 3 is constituted to be larger on the side of the GaAs buffer layer 2 than that on the side of the GaAs cap layer 5. For example, the value of (a) in the figure is set at 0.2, and the value of (b) is set at 0.
Patent JP-S5958637-A (JP)
Title: Optical reproducing device
Inventor: KUBOTA SHIGEO
IPC: G11B7/1381
Filed: 1982-09-28
Abstract: PURPOSE:To extend the distance among three detectors to form them on the same semiconductor substrate, by providing a phase type diffraction grating in the optical path and irradiating photodetectors through a concave lens with reflected beams of 0-order and + or -1-order diffracted lights. CONSTITUTION:A phase type diffraction grating 3 is arranged in the optical path between a semiconductor laser light source 1 and a beam splitter 4. A beam 2 from the light source 1 is separated to a 0-order diffracted beam 2a and + or -1- order diffracted beams 2b and 2c by the diffraction grating 3, and reflected beams are made incident to photodetectors 10, 11, and 12 through a concave lens 9. A tracking error signal is obtained on a basis of the difference between outputs of photodetectors 11 and 12. By arranging this concave lens 9, lengths among three photodetectors 10-12 are extended and adjusted easily, and three photodetectors are formed easily on the single semiconductor substrate.