baber/WOPTO huggingface dataset:
Patent TW-470767-B (TW)
Title: Special process for manufacturing multi-layered adhesive tape
Inventor: KAO CHENG-KANG
IPC: C09J7/20
Filed: 1999-05-19
Granted: 2002-01-01
Abstract: A special process for manufacturing easily portable and multi-layered adhesive tape is described. The easily portable and multi-layered adhesive tape is formed by compressing the adhesive tape having circular shape or other shapes. The adhesive tape is compressed and cohered during the compressing step. A stiff interfacial layer, for example, having adhesion by adhering two innermost adhesive surfaces, by providing a stronger adhesion material, by inserting a stiff and solid material, or a stiff and solid material coated with a strong adhesion material, is applied to the symmetry plane of the adhesive tape during the compressing step. The high adhesion material layer is preferably composed of materials having a high cross-linking density property, for example, a series of rapidly curing materials, such as cyanoacrylate adhesives or epoxy adhesives.
Patent TW-570889-B (TW)
Title: Handle, opening, strap member, sleeve member, clip member, bucket-handle combination for a container, and selectably positionable handle and container assembly, and the related method
Inventor: PERKINS RALPH G
IPC: B65D25/32
Filed: 1999-09-17
Granted: 2004-01-11
Abstract: A handle useful in combination with a container includes a plastic strap or bail and a plastic sleeve thereon. The bail or strap of the handle is pivotably connected to the container, and the sleeve can be rotated about the bail. Structures are provided to distribute load forces between the bail and sleeve. Structures are also provided to retain the sleeve along the longitudinal axis of the bail. One or more clip members can be provided on the bail to engage the container. The clip member includes positioning elements to locate and engage the handle in a selected position with respect to the container. Preferred methods for assembling and using the apparatus (including the combination of the handle and container) are disclosed.
Patent TW-475253-B (TW)
Title: Method for forming silicide regions on an integrated device
Inventor: TALWAR SOMIT
IPC: H01L21/265
Filed: 1999-10-15
Granted: 2002-02-01
Abstract: The invented method can be used to form silicide contacts to an integrated MISFET device. Field isolation layers are formed to electrically isolate a portion of the silicon substrate, and gate, source and drain regions are formed therein. A polysilicon runner(s) that makes an electrical connection to the integrated device, is formed on the isolation layers. The structure is subjected to ion implantation to amorphize portions of the silicon gate, source, drain and runner regions. A metal layer is formed in contact with the amorphized regions, and the metal layer overlying the active region of the integrated device is selectively irradiated using a mask. The light melts part of the gate, and amorphized source and drain regions while the remaining portions of the integrated device and substrate remain in their solid phases. Metal diffuses into the melted gate, source and drain regions which are thus converted into respective silicide alloy regions. Preferably, during selective irradiation, a portion of the gate region is not exposed to light so that it is relatively cool and acts as a heat sink to draw hear away from the irradiated portion of the gate region. The heat sink effect causes the gate silicidation rate to more closely correspond with the relatively slow source and drain silicidation rates. The method further includes a blanket irradiation step to diffuse metal into the runner regions to form silicide alloy regions which are then treated to form silicide regions.
Patent TW-476231-B (TW)
Title: Electronic machine
Inventor: SAWAI DAISUKE
IPC: H05K5/00
Filed: 1999-11-29
Granted: 2002-02-11
Abstract: The present invention provides the electronic machine in which the interchange of the battery is easy and the insulation distance between the battery and the electronic components on the board is sufficient, and the required assemble time and cost can be decreased by decreasing the number of components. The present invention comprises the outer case 1 and the control unit Ul inserted in the outer case 1, the control unit Ul comprises of: the base 2; the printed circuit board 3 assembled on the base 2; the battery holder 4 assembled on the base 2 and for holding the coil type battery W with terminals connected to the positive terminal or the negative terminal of the battery 3, and connected to the printed circuit board 3; the LCD 5 assembled on the base 2 and connected to the printed circuit board 3; and the back light unit 6 assembled on the base 2 and connected to the printed circuit board 3.
Patent TW-I228114-B (TW)
Title: Method and equipment for making ceramic work piece
Inventor: TANG HUA-SHING
IPC: B28B13/02
Filed: 1999-12-24
Granted: 2005-02-21
Abstract: The purpose of this invention is to provide a kind of process and equipment for direct, fast making of a 3-dimensional ceramic work piece, which is especially to provide a kind of method and equipment that enables precise and direct making of a ceramic work piece on the disclosed equipment to avoid the process of post-sintering necessary in a traditional method.
Patent TW-442998-B (TW)
Title: Dielectric filter, dielectric duplexer, and communication device
Inventor: HATTORI JUN
IPC: H01P1/213
Filed: 2000-02-18
Granted: 2001-06-23
Abstract: A dielectric filter according to the present invention is capable of providing the attenuation poles on both the low frequency side and the high frequency side of the passing band, without using two dielectric resonators. The dielectric filter includes a cavity in which a conductive layer is formed, and a cross-shaped dielectric resonator disposed within the cavity, a dielectric resonator having at least three resonant modes, and the loops being coupled to the dielectric resonator. The loop couples to the resonant mode at the first stage, among the resonant modes of the dielectric resonator, as well as couples to the resonant mode at the third stage in an approximately negative-phase with respect to the first stage.
Patent TW-453957-B (TW)
Title: Telephone-holder mounting support for motor vehicles
Inventor: BISPLINGHOFF GISELA
IPC: B60N3/14
Filed: 2000-02-23
Granted: 2001-09-11
Abstract: A telephone-holder mounting support for vehicles comprising a mounting surface for a telephone-holder, charger adapter or similar, and means of securing it inside the vehicle. The mounting support incorporates a cigarette lighter socket.
Patent TW-454307-B (TW)
Title: Method for manufacturing asymmetrical well regions of DRAM cell
Inventor: GUO JR-CHIUN
IPC: H01L21/8234
Filed: 2000-03-24
Granted: 2001-09-11
Abstract: The present invention provides a kind of method for manufacturing asymmetrical well regions of DRAM cell. In the invented method, after forming the doped region used for source/drain, local well region and local anti-punch through region with higher doped concentration are formed at the lower edge of doped region corresponding to the bit-line contact window so as to avoid the occurrence of short channel effect. Since the local anti-punch through region and local well region are not extended to the lower edge of doped region of the storage node contact window, the retention capability of charges stored at DRAM capacitor can also be maintained.
Patent TW-463089-B (TW)
Title: Build-in micro controller architecture and method that are able to planned as master and cache memory
Inventor: YI JIAN-NAN
IPC: G06F12/00
Filed: 2000-04-18
Granted: 2001-11-11
Abstract: Provided is a build-in micro controller architecture and method that are able to be planned as master and cache memory. The micro controller architecture includes a micro controller; a register; a dual usage memory built in the micro controller and planned to be a master or cache memory according to the content value in the register; and a tag memory decided to be enabled or disabled according to the content value in the register. It not only increases performance of the micro controller but makes the memory architecture inside the micro controller more flexible.
Patent TW-I277813-B (TW)
Title: Liquid crystal display device
Inventor: SAKAKI YOICHIRO
IPC: G02F1/1345
Filed: 2000-06-08
Granted: 2007-04-01
Abstract: A liquid crystal display device has a liquid crystal panel (11) and a plurality of TCPs (14) each mounted with a liquid crystal driver IC (15). Around the liquid crystal driver IC (15), the TCP (14) has signal input lines (18) for inputting signals to the liquid crystal driver IC (15), first signal-output lines (19a) for feeding output signals of the liquid crystal driver IC (15) to the liquid crystal panel (11), second signal-output lines (20a) for feeding the output signals of the liquid crystal driver IC (15) to the adjacent TCP, power supply lines (21) for driving the liquid crystal driver IC (15), and counter-electrode lines (22a, 22a') for feeding counter-electrode signals to the liquid crystal panel (11). The two counter-electrode lines (22a, 22b) are electrically connected to each other by means of a jumper chip 16. The wirings of the TCP (14) are connected with the corresponding electrode terminals of the liquid crystal panel (11) in a belt-shaped terminal connection area (23).
Patent TW-589488-B (TW)
Title: Liquid crystal module mounting structure
Inventor: KAN-O TOSHIAKI
IPC: G02F1/13
Filed: 2000-07-14
Granted: 2004-06-01
Abstract: A liquid crystal module mounting structure enabling various kinds of different liquid crystal modules to be mounted on a casing with ease, in which at a sidewall portion of a box-formed casing for housing a liquid crystal module unit, an attachment part is provided to which a fixing piece of substantially L-shaped is attached, and the liquid crystal module unit is held by the pressing of a peripheral portion of said liquid crystal module unit housed in the casing from the side of a screen by the fixing piece attached to the attachment part.
Patent TW-484017-B (TW)
Title: Charging management and detection device for large current individual battery
Inventor: RUAN JR-CHENG
IPC: G01R31/36
Filed: 2000-08-28
Granted: 2002-04-21
Abstract: A charging management and detection device for large current individual battery are disclosed, which is a device that can perform synchronous and equal charging with large current in accordance with several serially connected battery sets. It is composed of a power terminal voltage detection circuit, a logic analyzing comparison circuit, a battery terminal voltage detection circuit and a battery saturation voltage detection circuit. It can detect the charging condition of charged batteries automatically, manage the voltage of each individual battery connected in series during charging, calibrate the charging order, turn off the power, maintain the saturation voltage automatically when each battery comes close to saturation automatically. And it is capable of detecting the wire-connection condition of the power terminal and the battery terminal, it has the function such as turning off the system power automatically when the wire connection is abnormal, and so on. Thus, the purpose of applying large current, charging equally to the battery set and prolong the lifetime of the battery.
Patent TW-I290470-B (TW)
Title: The composition for treating glaucoma
Inventor: YOKOYAMA TOMIHISA
IPC: A61K31/44
Filed: 2000-11-30
Granted: 2007-12-01
Abstract: A combined agent for preventing and treating glaucoma, which contains as active components at least one compound selected from a group composed of angiotensin II antagonist, adreno-receptor blocker, prostaglandin and carbonic anhydrase inhibitor, those may be used separately or orderly.
Patent TW-527370-B (TW)
Title: A process for hydrogenating unsaturated polymers
Inventor: HUCUL DENNIS A
IPC: C08F8/04
Filed: 2000-11-30
Granted: 2003-04-11
Abstract: A hydrogenation catalyst and a process for hydrogenating an unsaturated polymer comprising contacting the unsaturated polymer with a hydrogenating agent in the presence of a mixed hydrogenation catalyst, characterized in that the mixed hydrogenation catalyst comprises a group VIII metal component and at least one component selected from the group consisting of a rhenium, molybdenum, tungsten, tantalum and niobium component.
Patent TW-497080-B (TW)
Title: Device, system and method for conducting a transaction using a translucent, transparent or semitransparent transaction card
Inventor: COCCO MIKAEL
IPC: G06K7/12
Filed: 2000-12-01
Granted: 2002-08-01
Abstract: A device, system, and method for performing a transaction using a translucent, transparent or semitransparent transaction card with a transaction card sensing device includes a transaction card of a material capable of passing visible light, such as clear PVC, and an infrared filter which is capable of passing visible light while preventing passage of infrared light in a predetermined range of wavelengths emitted by an infrared light source of the transaction card sensing device. When the transaction card is dipped in the card sensing device, the infrared light filter interrupts the passage of infrared light from the infrared light emitting source to an infrared light sensor of the transaction card sensing device, and the infrared light sensor generates a signal indicative of the presence of the transaction card in the card sensing device in response to the interruption.
Patent TW-498604-B (TW)
Title: High speed low current comparator
Inventor: LIN HUNG-JIUN
IPC: H03K5/22
Filed: 2000-12-11
Granted: 2002-08-11
Abstract: A high speed low current comparator consists of a first pair of complementary metal oxide semiconductors whose sources connect to a signal input; a second pair of complementary metal oxide semiconductors whose gates connect to the signal input; a complementary metal oxide semiconductors being connected in a diode manner having gate/drain common terminal and a source terminal that are connected to the second pair complementary metal oxide semiconductors between their drains; a third pair of complementary metal oxide semiconductor in which the gate of the NMOS transistor connects to the gate/drain common terminal and the gate of the PMOS transistor connects to the source terminal; a fourth pair of complementary metal oxide semiconductors whose gates connect to the drains of the third complementary metal oxide semiconductors; and a fifth pair of complementary metal oxide semiconductors whose gates connect to the drains of the fourth complementary metal oxide semiconductor and whose drains connect to an output terminal.
Patent TW-490802-B (TW)
Title: Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor
Inventor: WADA HIROYUKI
IPC: H01L21/66
Filed: 2000-12-30
Granted: 2002-06-11
Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
Patent TW-I224546-B (TW)
Title: Method and apparatus for designing molds, extruder dies and cores
Inventor: NARUSHIMA TAKESHI
IPC: G06F17/50
Filed: 2001-03-06
Granted: 2004-12-01
Abstract: Simulations are performed for (1) the change in shape of the molten resin when a parison is formed by extruding said resin through the gap between the extruder die and core, (2) the change in shape of the molten resin due to clamping the mold around the extruded parison and blowing compressed air into the parison, and (3) the thermal deformation that will occur in the molded product due to cooling after the molded product, obtained when the molten resin has solidified in the mold, is removed from the mold in a high-temperature state. The shapes of the mold, extruder die and core that will give the desired shape of molded product are determined from the results of these simulations.
Patent TW-508628-B (TW)
Title: Liquid crystal display device and manufacturing method thereof
Inventor: YAMAZAKI SHUNPEI
IPC: H01L21/00
Filed: 2001-03-06
Granted: 2002-11-01
Abstract: An electro-optical device typified by an active matrix type liquid crystal display device, is manufactured by cutting a rubbing process, and in addition, a reduction in the manufacturing cost and an improvement in the yield are realized by reducing the number of process steps to manufacture a TFT. By forming a pixel TFT portion having a reverse stagger type n-channel TFT, and a storage capacitor, by performing three photolithography steps using three photomasks, and in addition, by having a uniform cell gap by forming wall-like spacers by performing one photolithography step, without performing a rubbing process, a multi-domain perpendicular orientation type liquid crystal display device having a wide viewing angle display, and in which a switching direction of the liquid crystal molecules is controlled, can be realized.
Patent TW-580844-B (TW)
Title: Method for forming thin-film layer for device and organic electroluminescence device
Inventor: TOKAIRIN HIROSHI
IPC: C09K11/06
Filed: 2001-03-28
Granted: 2004-03-21
Abstract: The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation. The method for forming thin-film layer of devices comprises depositing each material under such control that ni value of the each material is k ± 0.5, wherein k is a constant from 2 to 5 when the relationship between a deposition position and a film thickness of a material I on the substrate is approximated by the following equation (1), wherein L0 is the distance from the evaporation source to the plane of the substrate in the perpendicular direction, D0i is a film thickness of the material I at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and DI is a film thickness of the material I at a position on the substrate which is apart from the evaporation source by a distance LI in a direction of an angle thetaI against the perpendicular line from the evaporation source to the plane of the substrate. By the method, a homogenous thin film layer for a device can be provided even if the substrate of screen is large.
Patent TW-I266363-B (TW)
Title: Method for producing semiconductor device
Inventor: SUEYOSHI YASUHIKO
IPC: H01L21/336
Filed: 2001-03-29
Granted: 2006-11-11
Abstract: A method for producing a semiconductor device comprises; forming a gate electrode on a semiconductor substrate, forming source/drain regions by an ion implantation using the gate electrode as a mask, and forming a silicide film on at least the surface of the gate electrode, wherein the ion implantation is performed by controlling tungsten dose to fall in a range from 0 to 5x10<9> atom/cm<2>.
Patent TW-I226107-B (TW)
Title: Method of manufacturing nitride read only memory
Inventor: CHANG KUO-HUA
IPC: H01L21/8244
Filed: 2001-05-11
Granted: 2005-01-01
Abstract: A kind of method for manufacturing the gate of improved type nitride read only memory (NROM) on a semiconductor substrate is provided in the present invention. At first, a bottom oxide layer and a silicon nitride layer are sequentially formed on the surface of semiconductor silicon substrate. Then, tantalum penta-ethoxide is introduced to deposit a tantalum pentoxide (Ta2O5) layer for the upper oxide layer at 200 to 650 DEG C and 300 mTorr. The upper oxide layer and the silicon nitride layer together with the bottom oxide layer are used to form an ONO dielectric structure. At last, a gate conduction layer is formed on the surface of the ONO structure to complete the manufacture of the invented nitride read only memory. The high dielectric constant tantalum pentoxide is used to lower the control gate voltage and to reduce the thermal budget so as to increase the coupling ratio and the process yield of semiconductor chip.
Patent TW-513568-B (TW)
Title: Method and device for detecting liquid concentration
Inventor: KIUCHI NORIHIRO
IPC: G01N21/59
Filed: 2001-06-20
Granted: 2002-12-11
Abstract: There are provided a method and a device for detecting liquid concentration. At least two kinds of light with different wavelengths having a central wavelength of 1.4 μm to 2.05 μm illuminate on the liquid, so as to detect the light penetration rate of the liquid for the light of each wavelength. Accordingly, it is able to detect the concentrations of at least two ingredients included in the liquid. In accordance with the present invention, it is able to precisely detect the concentrations of multiple ingredients included in the liquid for semiconductor process or liquid substrate process in real time and on line. In addition, in accordance with the present invention, it is able to excellently detect the liquid concentration with simple structure high precision and high reliability.
Patent TW-518516-B (TW)
Title: Sub-pipelined and pipelined execution in a VLIW
Inventor: STEISS DONALD E
IPC: G06F9/318
Filed: 2001-06-26
Granted: 2003-01-21
Abstract: A subpipelined translation embodiment providing binary compatibility between current and future generations of DSPs is disclosed. When a fetch packet is retrieved from memory (INSTRUCTION MEMORY), the entire fetch packet is assigned an operating mode (base instruction set or migrant instruction set) according to the execution mode (EXECUTION MODE) at the time the request was made to the instruction memory for the fetch packet. The fetch packets from the instruction memory are parsed into execute packets and sorted by execution unit (dispatched) in a datapath (SHARED DATAPATH) shared by both execution modes (base and migrant). Because the fetch packet syntax and execution unit encoding is different between the migrant and base architecture in this case, the two execution modes have separate control logic (BASE ARCHITECTURE CONTROL, MIGRANT ARCHITECTURE CONTROL). Instructions from the dispatch datapath are decoded by either base architecture decode logic or the migrant architecture decode logic, depending on the execution mode bound to the parent fetch packet of the instructions being decoded. Code processed by the migrant and base decode pipelines produces machine words (MACHINE WORD) that control the register files and the execution hardware functional units. These machine words are selected with a multiplexer. The choice of the eventual machine word from the multiplexer is governed by the operating mode bound to the fetch packet that produced the machine word and sequencing logic for sub-pipelined execution (SUBPIPELINE CONTROL). The selected machine word controls a global register file, which supplies operands to all hardware execution units and accepts results of all hardware execution units.