baber/WOPTO huggingface dataset:
Patent TW-410388-B (TW)
Title: A laminated structure and a method of forming the same
Inventor: KOIZUMI MASATO
IPC: H01L21/3205
Filed: 1998-02-24
Granted: 2000-11-01
Abstract: A method of forming a gate electrode of a multi-layer structure comprises a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of no oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
Patent TW-419790-B (TW)
Title: Method and apparatus for forming laminated thin films or layers
Inventor: HASHIMOTO TSUYOSHI
IPC: C23C16/455
Filed: 1998-02-25
Granted: 2001-01-21
Abstract: Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer ins loaded into the process chamber. Then, the first gases is supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.
Patent TW-397800-B (TW)
Title: Automatic carrier control method in semiconductor wafer cassette transportation apparatus
Inventor: IWASAKI JUNJI
IPC: H01L21/677
Filed: 1998-03-11
Granted: 2000-07-11
Abstract: This is an automatic carrier control used in semiconductor wafer cassette carrier device (30) to transport semiconductor wafer cassette (40). Automatic carrier (38) is controlled by the main computer (50). It moves semiconductor wafer cassette (40) to the automatic carrier's special entry port (88) of storage container (36). Automatic carrier (38) is used to confirm whether there are left semiconductor wafer cassettes (40) on port (88). If no semiconductor wafer cassette (40) remains, one will be placed on port (88). If there is a semiconductor wafer cassette (40), automatic carrier (38) will wait a certain time at port (88) for it to disappear. If semiconductor wafer cassette (40) is still not gone after a fixed time, automatic carrier (38) will enable an error signal.
Patent TW-377484-B (TW)
Title: Method of preventing misplacement of wafer on wafer carrier
Inventor: WU HUANG-HUI
IPC: H01L21/67
Filed: 1998-06-02
Granted: 1999-12-21
Abstract: This invention provides a method of preventing misplacement of wafer on wafer carrier, by creating two lugs on both sides of the wafer storage area, wherein the lugs are protruding from the surface of wafer carrier. When the wafer is off placed in adjacent slots, the bottom part of that wafer will be blocked by the lug guard and the top rim of wafer will be pushed up, allowing the operator to identify the problem immediately and make correction.
Patent TW-387096-B (TW)
Title: Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
Inventor: RATH DAVID L
IPC: H01L21/3213
Filed: 1998-06-08
Granted: 2000-04-11
Abstract: Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.
Patent TW-515790-B (TW)
Title: Process for preparing alkanals using a rhodium tri(polyethylene glycolate) and this compound itself
Inventor: BOGDANOVIC SANDRA
IPC: C07C45/50
Filed: 1998-07-04
Granted: 2003-01-01
Abstract: Branched and linear alkenes and cycloalkenes having five or more carbon atoms are converted into the corresponding branched and linear alkanals and cycloalkanals having six or more carbon atoms by hydroformylation using a previously unknown rhodium tri(polyethylene glycolate) of a polyethylene glycol having a mean molecular weight of from 320 to 650 as catalyst at a hydrogen/carbon monoxide pressure of from 60 to 200 bar and a temperature of from 50 to 150 DEG C. The reaction is preferably carried out in water or polyethylene glycol or a mixture thereof as solvent in a heterogeneous phase. The aldehydes obtained can easily be separated from the catalyst and the reaction mixture and are obtained in high purity and yield.
Patent TW-474938-B (TW)
Title: A new class of benzoporphyrin derivative photoactive compounds
Inventor: STERNBERG ETHAN D
IPC: A61K41/00
Filed: 1998-07-21
Granted: 2002-02-01
Abstract: New compounds expanding the repertoire of compounds useful in photodynamic therapy are described. Monohydrobenzoporphyrins can be obtained in the triacid form or as esters with heteroatom-substituted alcohols, or as amides.
Patent TW-370682-B (TW)
Title: Monitoring pattern of photolithograph
Inventor: HUANG ZHI-XIAN
IPC: G03F9/00
Filed: 1998-08-10
Granted: 1999-09-21
Abstract: The present invention provides a monitoring pattern of photolithograph, which an inward concave tetragonal pattern having two perpendicular exterior sides of equal length and two interior sides is designed, and said inward concave tetragonal pattern appears a shape gradually growing from small to large along the directions from intersection of the exterior sides and the interior sides to that of the two perpendicular exterior sides, and a cursor ruler pattern is added at the out side of the two exterior sides to detect the effect of astigmatism differential on resolution. And another set is added symmetrically to detect easily whether there is a problem of leveling after photolithograph.
Patent TW-379141-B (TW)
Title: High-pressure water injection knocking apparatus for poultry and livestock
Inventor: LIN LIANG-CHIUAN
IPC: A22B3/10
Filed: 1998-08-11
Granted: 2000-01-11
Abstract: The present invention relates to a high-pressure water injection knocking apparatus for poultry and livestock, comprising: 1 electric control box, 1 maximum pressure controller, 1 semi-automatic controller, 1 electric injector, 1 water tank, 1 pneumatic low-pressure water pump, 1 low-pressure indication gauge, 1 manual low-pressure release valve, 1 pneumatic high-pressure water pump, 1 automatic release valve, 1 pressure storage, 1 manual high-pressure release valve, 1 high-pressure indication gauge, 1 injection effective pressure flow controller, 2 hydraulic cylinders, 1 pneumatic injector and 1 air compressor; by means of the aforementioned apparatus, and when in use, the water in the water tank would go through the pneumatic low-pressure water pump, pneumatic high-pressure water pump and the injection effective pressure flow controller, then entering into the pneumatic injector at proper pressure and flow rate and being injected by the pneumatic injector being controlled by the electric injector aiming at the head of the head of the poultry or livestock to knock them until becoming unconscious for easy lausghtering.
Patent TW-396367-B (TW)
Title: Substrate-processing unit
Inventor: SUZUKI SATOSHI
IPC: H01L21/00
Filed: 1998-08-24
Granted: 2000-07-01
Abstract: This invention homogeneously deals with the overall surface of the substrate by elevating the replacement of the process solution toward the substrate. By the moving rolling wheel 18 of the moving mechanism 16 to support the substrate W, the sprinkle 30 with the discharge mouse 30a with cutting is shaped on the upper portion in the inclination direction of the substrate W to form the etch device. The substrate W inclines it relative to the horizontal plane. Sprinkle 30 supplies the etching solution on the surface of the substrate and proceeds the etch process on the substrate W. The inclination angle of the substrate W is set within the range of 5 DEG-20 DEG.
Patent TW-417379-B (TW)
Title: Method of data transmission and data transmission terminal for carrying out the method
Inventor: CAZIN DOMINIQUE
IPC: H04L69/14
Filed: 1998-09-10
Granted: 2001-01-01
Abstract: A terminal for transmitting data, by means of exchange (110,120), sets up a communication with a called terminal through the STN network, with transmission from one to the other of an indication of its accessibility through the INTERNET network and of an access characteristic which can be an INTERNET address, an encoding key. The active state of the means of exchange is detected by means (111) activating memory (113) reading means (112). The invention can be applied well to fax transmission.
Patent TW-419538-B (TW)
Title: Total aromatic synthetic fiber obtained from liquid crystal yarn, method of manufacturing it and its use
Inventor: SUZUKI HIROYUKI
IPC: D03D15/283
Filed: 1998-12-07
Granted: 2001-01-21
Abstract: The present invention discloses a total aromatic synthetic fiber obtained from liquid crystal yarn, the crystal size of which is less than 50<ANGSTROM>, and the contents of ionizable substance is less than 1.0% by weight. Said fiber possesses its inherent high heat resisting property and high Young's modulus, and less ionizable substance, and is especially useful for electric/electronic components.
Patent TW-396036-B (TW)
Title: Massaging apparatus
Inventor: INADA NICHIMU
IPC: A61H37/00
Filed: 1998-10-12
Granted: 2000-07-01
Abstract: A massaging apparatus capable of massaging a user includes diagnostic inquiry means for addressing a diagnostic inquiry to a user, input means for inputting a user's answer to the diagnostic inquiry, and judgment means for judging the physical condition of the user based on the user's answer.
Patent TW-388988-B (TW)
Title: Structure of bottom electrode for capacitor and method for producing the same
Inventor: WU CHI-TING
IPC: H01L27/108
Filed: 1998-10-14
Granted: 2000-05-01
Abstract: The present invention relates to a structure of a bottom electrode for a capacitor and a method for producing the same. The method comprises forming a layer of a polygonal or circular doped polysilicon layer on a dielectric layer provided on a substrate; performing an ion implantation step to convert the surface layer of the doped polysilicon layer into an amorphous layer; forming a layer of HSG layer on the amorphous layer to complete a capacitor bottom electrode consisted of a doped polysilicon layer, a polysilicon layer and a HSG layer.
Patent TW-404868-B (TW)
Title: Water-cooling method for steel plates and water-cooling tank, and the defect reduction method for steel casting plate containing chromium
Inventor: TADA MUTSUMI
IPC: B22D11/124
Filed: 1998-11-27
Granted: 2000-09-11
Abstract: The present invention relates to the water-cooling process for steel plate, more particularly, to a method for quenching the high temperature steel plate by immersing in the water, for example, the continuous casting ingot produced in steel continuous casting device, and the appropriate device for the method. The present invention provides the cold rolling method for steel plates with partly reduced gloss mottle or casting scab and the water-cooling tank. The solution is to immerse the steel plate in the water with its flat surface in the up-and-down direction; and, injecting water from the underside of steel plate. The flow rate of water injection is 10~150 l/m<2>*min. The water injection is better applied in vertical or slanted direction from the underside of steel plate; also, the above-mentioned water injection is better applied from a distance about 300~500 mm from the underside of steel plate. As for applying cold rolling to the steel casting plate containing Cr with 5~30 wt%, the surface temperature before starting cooling is above 500 DEG C and the plate will stay immersing in the water until the surface temperature is below 400 DEG C.
Patent TW-422799-B (TW)
Title: Bicycle pedal
Inventor: UEDA UTAKA
IPC: B62M3/08
Filed: 1998-11-27
Granted: 2001-02-21
Abstract: A bicycle pedal has a pedal body and a cage rotatably supported on a pedal spindle for supporting a rider's foot. The pedal spindle is fastened to a crank of a bicycle in a conventional manner. Preferably, the pedal body is a step-in pedal with a cleat engagement mechanism coupled to each side for releasably retaining a cleat of a bicycle shoe therein. The cage surrounds the pedal body and is coupled to the pedal body by a biasing member. The biasing member permits limited angular rotation between the pedal body and the cage such that the pedal body and the cage normal rotate together about the pedal spindle. An adjustment mechanism is coupled between the pedal body and the cage to change the angular position of cage relative to pedal body.
Patent TW-409223-B (TW)
Title: Data recording and reproducing apparatus
Inventor: MATSUMI CHIYOKO
IPC: H04L12/64
Filed: 1998-12-17
Granted: 2000-10-21
Abstract: When recording a file, the file is recorded in pieces, together with file management data for the file, and file management data for each of the pieces of the file. Further, from recording apparatus ID during initialization of a record medium that is in use, and date and time information of the start of initialization, record medium identification information for identifying the record medium can be generated and serve as entries of the record medium managing information recorded in the record medium. As such, whether currently stored record medium managing information corresponds with the record medium can be verified. Further, the record medium identification information can be recovered regardless of the portion of the record medium that is reproduced, thereby reducing the time required for verification.
Patent TW-501937-B (TW)
Title: Process for recovering onium hydroxides from solutions containing onium compounds
Inventor: HULME DAVID R
IPC: C02F1/469
Filed: 1999-01-19
Granted: 2002-09-11
Abstract: In one embodiment, the present invention relates to a process for recovering an onium hydroxide from a solution containing an onium compound, including contacting the solution with a cation exchange material so that at least a portion of onium cations from the onium compound are adsorbed by the cation exchange material; contacting an acid with the cation exchange material to elute an onium salt; charging the onium salt to an electrochemical cell containing at least three compartments, a cathode, an anode, and in order from the anode to the cathode, a bipolar membrane and a cation selective membrane, and passing a current through the cell whereby the onium hydroxide is regenerated; and recovering the onium hydroxide from the cell. In another embodiment, the present invention relates to a process for recovering an onium hydroxide from a solution containing an onium compound, including contacting the solution with a cation exchange material so that at least a portion of onium cations from the onium compound are adsorbed by the cation exchange material; contacting an acid with the cation exchange material to elute an onium salt; charging the onium salt to an electrochemical cell containing at least two compartments, a cathode, an anode, and an anion selective membrane therebetween, and passing a current through the cell whereby the onium hydroxide is regenerated; and recovering the onium hydroxide from the cell.
Patent TW-427053-B (TW)
Title: Low voltage switched capacitor integrator having offset voltage compensation and the filter using the same
Inventor: LIOU SHEN-YUAN
IPC: G06G7/186
Filed: 1999-03-10
Granted: 2001-03-21
Abstract: The present invention relates to a switched capacitor integrator which can be applied in low voltage environment and providing offset voltage compensation and the filter composed of the integrator circuit. No matter in the circuit of switched capacitor or switched opamp, the offset voltage of the amplifier will limit the operation precision of the overall circuit. The conventional capacitor circuit could not operate under low voltage. Therefore, the present invention disclosed a switched capacitor integrator and a filter for compensating the offset voltage generated by the amplifier in the circuit and being applied for low power voltage.
Patent TW-403828-B (TW)
Title: Water cooled finger for pre-heater of furnace top
Inventor: NOMURA TAMOTSU
IPC: C21C5/56
Filed: 1999-07-06
Granted: 2000-09-01
Abstract: A water cooled finger for a pre-heater of a furnace top holds metal materials of a required amount in a shaft installed at the furnace top for pre-heating metal materials by introducing exhaust gas at high temperature generated in the furnace into the shaft. The water cooled finger is formed of a pair of side face, an upper plate and lower plate. The upper plate is fixed to an upper plate of both of side face portions. The lower plate is fixed to a lower plate of both of side face portions. The water cooled finger is formed to be hollow as a whole by the side face, the upper plate and the lower plate. The water cooled finger satisfies at least one of the conditions of (A) a thickness of the upper plate is thicker than that of said lower plate, (B) the lower plate is formed to be R-bending processed portions at both ends thereof, and (C) the lower plate is curved outside.
Patent TW-483886-B (TW)
Title: Method for recovering methyl acetate and residual acetic acid in the production of pure terephtalic acid
Inventor: PARTEN WILLIAM DAVID
IPC: C07C51/487
Filed: 1999-07-06
Granted: 2002-04-21
Abstract: A method for recovering methyl acetate and residual acetic acid in a two-stage process for producing pure terephthalic acid having a first oxidation stage and a second purification stage
Patent TW-502330-B (TW)
Title: Wafer processing method
Inventor: LUO YUNG-TSUEN
IPC: H01L21/304
Filed: 1999-07-07
Granted: 2002-09-11
Abstract: There is provided a wafer processing method, which comprises forming a layer of passivation film before polishing the wafer back and adhering tape; next, adhering a tape and polishing; after completing the polishing and peeling off the tape, removing the passivation film together with the tape, whereby the residual glue on the tape does not retain on the surface of the wafer.
Patent TW-554650-B (TW)
Title: Lamination method of eight-layered circuit board and the product thereof
Inventor: JENG YU-CHIANG
IPC: H05K3/46
Filed: 1999-08-26
Granted: 2003-09-21
Abstract: The present invention provides an eight-layered circuit board in which the 2nd and 7th layers are the grounding layers, the 5th layer is the power layer, the 1st, 3rd, 4th, 6th and 8th layers are the signal line layers. The circuit further has a 1st insulation layer located between the 4th and 5th layers of the said circuit board; two 2nd insulation layers located between the 3rd-4th, and the 5th-6th layers of the said circuit board respectively; two 3rd insulation layers located between the 2nd-3rd, and the 6th-7th layers of the said circuit board respectively; two 4th insulation layers located between the 1st-2nd, and the 7th-8th layers of the said circuit board respectively. Its feature is that the thickness of the 1st, 2nd, and the 3rd insulation layers is within 3-9 mil, and the thickness of the 4th insulation layer is within 2.5-6.5 mil. The impedances among each signal line layers are matched, so as to achieve the effect of reducing the reflection and electromagnetic wave interference of high-speed signal, and applications in high-speed signal.
Patent TW-434937-B (TW)
Title: Solid electrolyte battery
Inventor: AKASHI HIROYUKI
IPC: H01M50/557
Filed: 1999-10-05
Granted: 2001-05-16
Abstract: A solid electrolyte battery is disclosed which is capable of raising an energy density without deterioration of discharge load characteristics thereof, incorporation a wound electrode incorporating a positive electrode incorporating an elongated positive-electrode collector having two sides on which positive-electrode active material layers are formed, a negative electrode incorporation an elongated negative-electrode collector having two sides on which negative-electrode active material layers are formed and a solid electrolyte later formed between the positive electrode and the negative electrode such that the positive electrode and the negative electrode are laminated and wound, wherein when an assumption is made that the total thickness of a pair of the positive-electrode active material layers formed on the two sides of the collector for the positive electrode is total film thickness A and the total thickness of a pair of the negative-electrode active material layers formed on the two sides of the collector for the negative electrode is total thickness B, the total film thickness A of the positive-electrode active material layers satisfies a range from 60 mu m to 150 mu m, and ratio A/B of the total film thickness A of the positive-electrode active material layers with respect to the total thickness B of the negative-electrode active material layers satisfies a range from 0.5 to 1.2.
Patent TW-429531-B (TW)
Title: Structure of multiple metal interconnect of IC and its manufacture method
Inventor: LIANG MONG-SONG
IPC: H01L21/768
Filed: 1999-10-07
Granted: 2001-04-11
Abstract: A manufacture method of multiple metal interconnection of IC is disclosed. First, a substrate is provided. Sequentially deposit a first conductive layer and a dielectric layer on the substrate and form an opening to the first conductive layer. Second, deposit the first conductive layer on the bottom of the dielectric opening to let the first conductive layer with a extrusion part in the dielectric opening. Third, form a diffusion barrier layer along the dielectric layer and the extrusion part of the first conductive layer and fill a plug into the dielectric opening. Finally, deposit the second conductive layer touching the plug.
Patent TW-488067-B (TW)
Title: Manufacturing method of deep trench capacitor
Inventor: SHIAU JIA-SHUEN
IPC: H01L27/108
Filed: 1999-10-13
Granted: 2002-05-21
Abstract: This invention provides a manufacturing method of deep trench capacitor. A deep trench is formed in a substrate, and an insulation material is formed in the deep trench without reaching the level of the substrate surface. A hard material spacer is formed on the sidewall of the deep trench above the filled insulation material, which is followed by removing the insulation material. A doped layer is formed in the deep trench and a thermal process is performed to form a doped area at the bottom of the deep trench to function as a storage electrode. Then, the doped layer is removed then and a capacitor dielectric layer is formed on the storage electrode. A first conductor layer is formed in the deep trench to fill the deep trench to an adequate extent, which is higher than the hard material spacer but lower than the surface of the substrate and exposes top surface of the deep trench portion. A second conductor layer is also formed in the deep trench. The first and the second conductor layers are used as a top electrode and connected electrically through the exposed top surface of the deep trench and the substrate.
Patent TW-502163-B (TW)
Title: Device to increase the efficiency of processor-systems
Inventor: STOESS ANNIE
IPC: G06F12/0831
Filed: 2000-02-22
Granted: 2002-09-11
Abstract: In order to increase the efficiency of processor-systems composed of many one-processors, which are used to maintain the cache-coherence inside the processor-system of the MESI-State model, it is suggested to expand the MESI-State model, which is limited to four states, with other states. The state situation inside the processor-system can be processed differently in this way and unnecessary Bus-access can be avoided. The operation-capacity that becomes available can be used to increase the performance of the system.