baber/WOPTO huggingface dataset:
Patent TW-562802-B (TW)
Title: Epothilone derivatives
Inventor: VITE GREGORY D
IPC: C07D493/04
Filed: 1998-07-02
Granted: 2003-11-21
Abstract: The present invention relates to compounds of the formula, Q is selected from the group consisting of formula, G is selected from the group consisting of alkyl, substituted alkyl, substituted or unsubstituted aryl, heterocyclo, W is O or NR15; X is O or H,H; Y is selected from the group consisting of O; H,OR16; OR17,OR17; NOR18; H,NOR19; H,NR20R21; H,H; or CHR22; OR17OR17 can be a cyclic ketal; Z1, and Z2 are selected from the group consisting of CH2, O, NR23, S, or SO2, wherein only one of Z and Z2 is a heteroatom; B1 and B2 are selected from the group consisting of OR24, or OCOR25, or O2CNR26R27; when B1 is H and Y is OH, H they can form a six-membered ring ketal or acetal; D is selected from the group consisting of NR28R29, NR30COR31 or saturated heterocycle, R1, R2, R3, R4, R5, R6, R7, R13, R14, R18, R19, R20, R21, R22, R26, and R27are selected from the group H, alkyl, substituted alkyl, or aryl and when R1 and R2, are alkyl can be joined to form a cycloalkyl; R3 and R4 are alkyl can be joined to form a cycloalkyl; R9, RI0, R16, R17, R24, R25, and R31 are selected from the group H, alkyl, or substituted alkyl; R8, R11, R12, R28, R30, R32, R33, and R30 are selected from the group consisting of H, alkyl, substituted alkyl, aryl, substituted aryl, cycloalkyl, or heterocyclo; R15, R23 and R29 are selected from the group consisting of H, alkyl, substituted alkyl, aryl, substituted aryl, cycloalkyl, heterocyclo, R32C=O, R33SO2, hydroxy, O-alkyl or O-substituted alkyl, the pharmaceutically acceptable salts thereof and any hydrates, solvates or geometric, optical and stereoisomers thereof, with the proviso that compounds wherein W and X are both O; and R1, R2, R7, are H; and R3, R4, R6, are methyl; and R8, is H or methyl; and Z1, and Z2, are CH2; and G is 1-methyl-2-(substituted-4-thiazolyl)ethenyl; and Q is as defined above are excluded.
Patent TW-406374-B (TW)
Title: Method for forming transistors with raised source and drains and device formed thereby
Inventor: BROWN JEFFREY S
IPC: G03F7/38
Filed: 1998-07-17
Granted: 2000-09-21
Abstract: The preferred embodiment of the present invention provides a transistor structure and method for fabricating the same that overcomes the disadvantages of the prior art. In particular, the preferred structure and method results in lower leakage and junction capacitance by using raised source and drains which are partially isolated from the substrate by a dielectric layer. The raised source and drains are preferably fabricated from the same material layer used to form the transistor gate. The preferred method for fabricating the transistor uses hybrid resist to accurately pattern the gate material layer into regions for the gate, the source and the drain. The source and drain regions are then connected to the substrate by growing silicon. The preferred method thus results in an improved transistor structure while not requiring excessive fabrication steps.
Patent TW-550276-B (TW)
Title: Amine residue-containing polysilazane and process for the preparation thereof
Inventor: SHIMIZU YASUO
IPC: C08G77/62
Filed: 1998-08-07
Granted: 2003-09-01
Abstract: An amine residue-containing polysilazane having a number average molecular weight of 100-100,000 and having a molecular chain containing a silazane structure is represented by the general formula (I) shown below and/or a silazane structure is represented by the general formula (II) shown below: in which R1 and R2 each stand for hydrogen, a hydrocarbyl group or a hydrocarbyl group-containing silyl group, A and A2 each stand for a divalent hydrocarbyl group, B stands for an N-hydrocarbyl group-substituted amine residue or a cyclic amine residue, B2 stands for a divalent linear amine residue or a divalent cyclic amine residue and p, r and q are each 0 or 1. The above polysilazane may be obtained by reacting a polysilazane with a mono- and/or dihydroxyl compound having an amine residue in an inert organic solvent containing no active hydrogen.
Patent TW-389698-B (TW)
Title: Wheel for a roller skate
Inventor: GALY PHILIPPE
IPC: A63C17/22
Filed: 1998-08-25
Granted: 2000-05-11
Abstract: A wheel for a roller skate, especially an in-line roller skate. The wheel has a hub whose peripheral surface has a substantially U-shaped section whose arms form flanges  confining a dampening layer which extends beyond the flanges, opposite the base of the U-shape. The wheel has both a good rigidity in the lateral direction and a thick dampening layer.
Patent TW-398078-B (TW)
Title: Manufacturing method of CMOS image sensor
Inventor: JANG GUANG-YE
IPC: H01L27/14
Filed: 1998-10-02
Granted: 2000-07-11
Abstract: This manufacturing method of CMOS image sensor includes P-substrate with isolation and active regions. There is a gate structure formed in the active region. The N<+>-doping source/drain regions were formed in the substrate below the two sides of the gate structure. After that, four implantation processes are implemented: the P<->-doping regions are formed in the substrate between the edge of the isolation region and the source/drain regions; the region between the isolation region and the P<->-doping region and close to substrate surface is formed N<+>-doping region, I.e. the sensor region; the region just below the N<+>-doping region in the substrate, the N<->-doping region is formed; another P<->-doping region is formed in the substrate just below the N<->-doping region.
Patent TW-400672-B (TW)
Title: Digital frequency synthesizer and its frequency synthesis method
Inventor: LI JEN-YI
IPC: H03L7/095
Filed: 1998-10-07
Granted: 2000-08-01
Abstract: This invention provides a digital frequency synthesizer and its frequency synthesis method, where the frequency synthesizer includes the clock pair having two similar ring-typed oscillators, a frequency tracking unit, and a clock controller. The characteristic of frequency searching method is when the frequency difference is larger than the cost range, the search status becomes rough search status, and uses the ""prune-and-search"" algorithm to search for the target frequency; when the frequency difference is larger than the locked range and smaller than the cost range, the search status becomes delicate search status, and uses the ""fix-step"" algorithm to search for the target frequency. The pure-digitized design of the frequency synthesizer could be settled in the stage of high level descriptive language to form part of the target cell device database.
Patent TW-442746-B (TW)
Title: Book-shaped information terminal
Inventor: KIM JUNG-HOON
IPC: G06F1/16
Filed: 1998-10-07
Granted: 2001-06-23
Abstract: The present invention relates to a book-shaped information terminal, and an object of the present invention is to help users to use conveniently a portable computer like a book, as it constitutes an information terminal as a portable computer in such a shape as book, by comprising an armoring cover being opened and closed, while a thin film display unit being attached and fixed on one side and a main body attached and fixed to another side in order to put opposite to the thin film display unit attached and fixed to one side of said armoring cover, when folded.
Patent TW-472175-B (TW)
Title: Photosensitive resin composition and photosensitive element using the resin composition
Inventor: KOSAKA EIJI
IPC: C08F290/06
Filed: 1998-11-10
Granted: 2002-01-11
Abstract: To provide a photosensitive resin composition and a photosensitive element using the resin composition with excellent sensitivity and adhesion as well as high resolution and plating resistance. A photosensitive resin composition, comprises (A) a polymer carrying carboxyl groups, (B) a compound carrying at least one ethylene-based unsaturated group in the molecule, and (C) a photopolymerization initiator, characterized by the fact that component (B) contains at least 60 weight % of methacrylate (B1) carrying at least one ethylene-based unsaturated group with respect to the total amount of component (B), that the amount of component (C) is in the range of 0.01-20 weight units with respect to 100 weight units of component (A) and component (B), and that component (C) contains 2-5 weight units of lophine dimer (C1) and 0.1-2.0 weight units of triphenylphosphine (C2) with respect to 100 weight units of component (A) and component (B), as well as a photosensitive element using the resin composition.
Patent TW-535357-B (TW)
Title: Transistor output circuit
Inventor: OKADA KOJI
IPC: H03K19/0175
Filed: 1998-11-24
Granted: 2003-06-01
Abstract: A transistor output circuit generates an output signal having a voltage greater than a breakdown voltage of the transistors used to construct the output circuit. The output circuit includes an NMOS transistor and a PMOS transistor that are connected in series and have their gates connected to each other. A potential control circuit is also connected to the gates and the sources of the NMOS and PMOS transistors. The potential control circuit receives power from a high potential power supply and a low potential power supply. The potential control circuit applies a reference voltage, which has a voltage value between the voltages generated by the high and low potential power supplies, to the gates of the transistors. Then, in response to an input signal, the potential control circuit controls the voltages applied to the sources of the transistors. The output circuit may be connected to a level converter circuit, an op amp circuit, and other logic circuits.
Patent TW-541317-B (TW)
Title: Vinyl chloride resin composition
Inventor: NAKANISHI YASUSHI
IPC: C08L27/06
Filed: 1998-12-02
Granted: 2003-07-11
Abstract: A vinyl chloride resin composition having an excellent processability without lowering the transparency wherein the gelation property of a vinyl chloride resin is improved with great decrease of generating ungelled substance; which comprises a vinyl chloride resin and 0.1 to 30 parts by weight of a processing aid per 100 parts by weight of said vinyl chloride resin wherein said processing aid is a polymer obtainable from polymerizing 70 to 97 parts by weight of a monomer mixture (B) that comprising 60 to 100% by weight of methyl methacrylate, 0 to 40% by weight of at least one monomer selected from the group consisting of an alkyl acrylate and an alkyl methacrylate different from methyl methacrylate and 0 to 10% by weight of another vinyl monomer copolymerizable thereto, in the presence of a latex obtainable by emulsion-polymer (A) at 3 to 30 parts by weight of a monomer mixture that comprising 0 to 50% by weight of methacrylate, 50 to 100% by weight of an alkyl acrylate and 0 to 20% by weight of another vinyl monomer copolymerizable thereto, and the total amount of said mixtures (A) and (B) being 100 parts by weight; and said polymer has a specific viscosity of at least 1 measured at 30 DEG C with respect to a solution of 0.4 g said polymer per 100 ml benzene.
Patent TW-460522-B (TW)
Title: Hydrophobic, oxidic or siliceous fillers and their use
Inventor: SCHOLL THOMAS
IPC: C08K9/04
Filed: 1999-02-08
Granted: 2001-10-21
Abstract: Hydrophobic, oxidic and/or siliceous fillers obtainable by treating an oxidic and/or siliceous filler with 0.1 to parts by weight, per 100 parts by weight of filler, with an adduct of sulfur and unsaturated primary and/or secondary alcohols with alcohols with 3 to 60 carbon atoms at temperature of 20 to 25 DEG C, wherein the adduct has been obtained by reacting 1 to 10 moles of sulfur per moles of sulfur per mole of double bonds in the alcohol.
Patent TW-413856-B (TW)
Title: Electron-beam cell projection aperture formation method
Inventor: YAMASHITA HIROSHI
IPC: G03F1/20
Filed: 1999-02-23
Granted: 2000-12-01
Abstract: The present invention provides an electron-beam cell projection aperture formation method comprising: a step of applying a converged ion beam to a top surface of a substrate so as to be etched to a depth enabling to obtain a sufficient film thickness for absorbing or scattering an electron-beam thereby to form an opening of a desired pattern on the top surface; and a step of uniformly applying the converged ion beam to a back surface of the substrate, excluding a hem portion thereof, so as to be etched to a depth reaching the opening.
Patent TW-466762-B (TW)
Title: High speed CMOS image column CDs circuit
Inventor: XU WEIZE
IPC: H04N5/357
Filed: 1999-02-25
Granted: 2001-12-01
Abstract: A correlated double sampling unit within a CMOS imager employs an image sensor having a plurality of photodetectors arranged in a series of rows and columns with a row addressing circuit, a column addressing circuit, a first sample and hold circuit allocated for each of the columns, a transfer circuit operatively connecting each of the columns to the first sample and hold circuit for each of the columns, and a plurality of second sample and hold circuits, each of the second sample and hold circuits being operatively connected to a subset of the first sample and hold circuits.
Patent TW-407340-B (TW)
Title: Manufacture method of borderless contact with self-alignment stop layer
Inventor: SHIU SHR-YING
IPC: H01L21/768
Filed: 1999-05-18
Granted: 2000-10-01
Abstract: The present invention relates to a manufacture method of borderless contact with self-alignment stolayer with larger process margin, which stop layer of etching borderless contact only forms on the shallow trench isolation (STI). This invention at least comprises the silicon nitride stop layer inside the shallow trench isolation (STI). Besides, there is silicon bottom substrate on the semiconductor device which forms pad oxide, pad polysilicon layer and the first silicon nitride on the upper portion of the substrate of the silicon bottom substrate. Next, forms the photoresist layer on the upper portion of the first silicon nitride. And utilizing the photoresist layer as the photomask to etch the first silicon nitride, pad poly-silicon layer, pad oxide and silicon bottom substrate to form the shallow trench isolation (STI). Next, deposit the first and the second silicon oxide on the upper portion of the silicon bottom substrate and inner portion of the shallow trench isolation (STI). After utilizing the process of the chemical mechanical polishing method to planarize the surface of the chip, next to utilize the method of back-etching oxide so that the height of the first and the second silicon oxide is lower than the surface of the silicon bottom substrate between 500 to 1000 <Angstrom>. Next, deposit the second silicon oxide on the upper portion of the silicon bottom substrate and the inner portion of the shallow trench isolation (STI). Utilizing the method of planarization to remove part of the second silicon oxide and the first silicon oxide so that the height sited on the second silicon oxide of the shallow trench isolation (STI) is equal to the height of the surface of the silicon bottom substrate. Finally, utilizing the anisotropical way to etch pad poly-silicon layer and pad oxide.
Patent TW-434911-B (TW)
Title: Method for forming high density SOI vertical channel flash memory
Inventor: LIN CHUNG-RUNG
IPC: H01L29/788
Filed: 1999-09-14
Granted: 2001-05-16
Abstract: A method for forming high density SOI vertical channel flash memory is provided. It comprises the following steps: first, providing a SOI substrate and sequentially forming a pad oxide layer and a silicon nitride layer; then, patterning the substrate to expose plural long stripe silicon layers; next, defining plural depressed regions by using photoresist perpendicular to the long stripe silicon layer and proceeding an anisotropic etching process to form SOI exposed depressed region; next, proceeding LATID ion implantation to adjust threshold voltage of the SOI vertical channel; then etching the non-mask silicon nitride layer to expose silicon layer of SOI and performing source/drain implantation; next, after the photoresist is removed, forming photoresist perpendicular to the former photoresist to cover the depressed region; proceeding ion implantation to make source or drain regions beside the depressed region; removing the photoresist and forming tunnel oxide layer; then depositing polysilicon to be the floating gate and forming ONO layer; and finally, forming the control gate.
Patent TW-I226373-B (TW)
Title: Ultra-high strength ausaged steels with excellent cryogenic temperature toughness
Inventor: KOO JAYOUNG
IPC: C21D1/19
Filed: 1999-12-10
Granted: 2005-01-11
Abstract: An ultra-high strength, weldable, low alloy steel with excellent cryogenic temperature toughness in the base plate and in the heat affected zone (HAZ) when welded, having a tensile strength greater than about 830 MPa (120 ksi) and a microstructure comprising (i) predominantly fine-grained lower bainite, fine-grained lath martensite, fine granular bainite (FGB), or mixtures thereof, and (ii) up to about 10 vol% retained austenite, is prepared by heating a steel slab comprising iron and specified weight percentages of some or all of the additives carbon, manganese, nickel, nitrogen, copper, chromium, molybdenum, silicon, niobium, vanadium, titanium, aluminum, and boron; reducing the slab to form plate in one or more passes in a temperature range in which austenite recrystallizes; finish rolling the plate in one or more passes in a temperature range below the austenite recrystallization temperature and above the Ar3 transformation temperature; quenching the finish rolled plate to a suitable quench stop temperature (QST); stopping the quenching; and either, for a period of time, holding the plate substantially isothermally at the QST or slow-cooling the plate before air cooling, or simply air cooling the plate to ambient temperature.
Patent TW-440935-B (TW)
Title: Self-alignment process and structure of ETOX flash memory
Inventor: WANG LIN-SUNG
IPC: H01L21/28
Filed: 1999-12-31
Granted: 2001-06-16
Abstract: There is provided a self-alignment process and structure of ETOX flash memory. The process comprises: providing a substrate, forming a plurality of mutually parallel device isolation structures on the substrate, and forming a plurality of mutually parallel stack gates on the substrate, which are perpendicular to the device isolation structures; next, forming a plurality of first insulation layers, each disposed on one stack gate, and forming a plurality of spacer, each disposed on the sidewall of one stack gate; next, forming a plurality of source arrays and drain arrays disposed on the substrate and between adjacent stack gates, and parallel with the stack gates, wherein the source arrays and drain arrays are interlaced and arranged among the stack gates, and each source array has a plurality of source doped regions respectively disposed between the device isolation structures and each drain array has a plurality of drain doped regions respectively disposed between the device isolation structures; and then, forming a plurality of source lines disposed on the source array between adjacent spacers.
Patent TW-420628-B (TW)
Title: Gripper for surface mounting apparatus
Inventor: OH TAE-SEOK
IPC: B25J15/08
Filed: 2000-01-14
Granted: 2001-02-01
Abstract: This invention relates to a gripper for surface mounting apparatus, which installs various chips and surface mounting devices on printed circuit board to provide various kinds of semiconductor equipment and electronic components fast and accurately. The disclosed invention comprises: a gripper base having an air hole in the center; a gripper joint combined at lower part of a gripper base and connected to one end of pulling spring on the side portion to form the fixing hole; a gripper piston rod, passing through the gripper joint and engaged in the gripper base, capable of moving up and down by the air provided from the air hole; and a pair of jaws having fixing rods, equipped on the corresponding left and right sides so as to move on the back side of the gripper joint and fixed on one side to the other end of pulling spring; and a gripper tooth joint fixed to the upper part of jaw by fixing means; gripper tooth fixed on the gripper tooth joint by fixing means to hold the electronic parts; a shaft installed in between the pair of jaws and fixed to one end of gripper piston rod; cams fitted to both ends of the shaft; and rollers combined to both ends of the shaft to contact with the outer surfaces of the cams.
Patent TW-426587-B (TW)
Title: Revolving spindle set in pad conditioner used for chemical mechanical grinding machine
Inventor: LIANG YAU-SHIANG
IPC: B24B37/04
Filed: 2000-02-18
Granted: 2001-03-21
Abstract: A machine component structure of a chemical mechanical polishing device is disclosed here. This machine component is a revolving spindle set in pad conditioner, containing at least the following parts: a long spindle, shaped as hollow cylinder, and having thread on the inner wall of upper end thereof; a pulley seat, shaped as hollow cylinder, having a round hole with diameter equal to the inner diameter of the long spindle at the center of bottom portion, and provided with several screw holes at the upper surface of the cylinder wall; a central bolt, which is hollow and has thread on partial of the outer surface, passing through bottom round hole from inside of the pulley seat and locked in the thread of the long spindle to fasten the pulley seat on the top end of the long spindle; and a pulley, containing at least a side wall and an inner flat surface, which the outer portion of the side wall can be contacted with the driving belt of the conditioner, the side of the inner flat surface is connected to the inside portion of the side wall, the inner flat surface is provided with a central hole and several screw holes aligned with the several screw holes of the pulley seat and locked with suitable screw bolts to fasten the pulley on top surface of the pulley seat, and the central hole is aligned with the hollow area of the pulley seat.
Patent TW-444256-B (TW)
Title: Process for fabricating semiconductor device having reliable conductive layer and interlayer insulating layer
Inventor: SUGAI KAZUMI
IPC: H01L21/768
Filed: 2000-03-28
Granted: 2001-07-01
Abstract: A lower conductive line consists of a barrier metal layer (6) of tantalum or tantalum nitride conformably formed in a groove (5) in an inter-layered insulating layer (4) and a copper layer (8) filling a hollow space defined by the barrier metal layer (6), wherein a first chemical mechanical polishing is carried out for the copper (7) until the barrier metal layer (6) is exposed and, thereafter, a second chemical mechanical polishing is carried out for the barrier metal layer (6) and an upper portion of the inter-layered insulating layer (4) until the remaining inter-layered insulating layer becomes coplanar with or lower than the copper layer left in the groove so that the copper layer (8) and the inter-layered insulating layer (4) are prevented from over-polishing.
Patent TW-442421-B (TW)
Title: Front wheel steering apparatus for motorcycle
Inventor: TAKAYANAGI SHINJI
IPC: B62K21/00
Filed: 2000-04-25
Granted: 2001-06-23
Abstract: For a motorcycle of the type having a swing arm front suspension system and a steering system, the swing arm and link mechanism can be used in common even if the vehicle frame is changed. A front wheel steering apparatus of a motorcycle 10 comprises: an axle holder block 54 secured horizontally turnably to the swing arm which is vertically swingable; a front wheel 18 rotatably secured to the axle holder block; a knuckle 57 of the axle holder block connected to one end of a link mechanism 80, and the other end of the link mechanism connected to a steering shaft 73. The kingpin 53 has a center line offset with respect to a center line of the steering shaft. The link mechanism comprises a bendable link having a first link and a second link 82, 84 interconnected at a joint 85 thereof via a universal joint 86 so that the link mechanism can bend about the joint for accommodating vertical movements of the front wheel.