baber/WOPTO huggingface dataset:
Patent TW-351858-B (TW)
Title: Process for depositing silicon structure on insulation layer of DRAM
Inventor: Sun shi-wei
IPC: H01L27/108
Filed: 1996-11-19
Granted: 1999-02-01
Abstract: A silicon on insulator structure for DRAM, in which the structure includes: (a) a substrate having a silicon surface and covered with silicon oxide embedded layer; (b) a field oxide isolation region formed on the surface of the substrate, extending out of the silicon surface and connecting with the silicon oxide embedded layer within the active device region of the silicon surface; (c) a first and a second source/drain regions composed within the active device region and forming a channel region on the silicon surface; (d) a gate oxide layer formed on the channel region; (e) a gate electrode on the gate oxide layer; (f) a trench formed in the first and the second source/drain regions, passing the silicon surface and entering the silicon oxide embedded layer; (g) a low capacitor electrode extending to the trench and connecting to the silicon oxide embedded layer under the substrate; (h) a dielectric layer under the low capacitor electrode; and (i) a high capacitor electrode.
Patent TW-357256-B (TW)
Title: Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace
Inventor: GU YOUFAN
IPC: H01L21/31
Filed: 1997-03-03
Granted: 1999-05-01
Abstract: An apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace, including: an extended conduit, having a wall, with an inner surface surrounding a space, including the extended conduit an inlet and an outlet, for flowing the first fluid in and out of the space through the outlet; an injector, adjacent the inner space between the inlet and the outlet, facing longitudinally the outlet; and the second fluid supply, connected to the injector outside the conduit.
Patent TW-334373-B (TW)
Title: Electrode for welding
Inventor: AOYAMA YOSHITAKA
IPC: B23K11/14
Filed: 1997-05-10
Granted: 1998-06-21
Abstract: An electrode for welding is disclosed. The guide hole with circular cross-section is constituted by a small hole and a large hole and a small stem part and a large stem part of the guide pin are inserted respectively into the small hole and large hold of the guide hole. The pressured air injects through the aperture between the small hole and the small stem part of the guide hole when the guide pin is pressed down. It is characterized in that the guide pin serves as the guide part for inserting the large stem part into the large hole and fixing it and the end surface of the guide part and the inner end surface of the large hole contact with each other intensively and thus to form an air passage in the axial direction of the guide pin.
Patent TW-381133-B (TW)
Title: Washing machine
Inventor: KIM DO-WEON
IPC: D06F37/20
Filed: 1997-05-22
Granted: 2000-02-01
Abstract: A kind of washing machine which comprises an external cabinet, an outer tub mounting in the external cabinet, a rotatable spin basket mounting in the outer tub and a plurality of suspension units supporting the outer tub in the external cabinet. Each suspension unit comprises: sling rod connecting external cabinet and outer tub, a primary damper combined with one end of sling rod and auxiliary damper combined with another end of sling rod and neighbored to primary damper. Therefore, the vibration and noise of outer tub can be effectively eliminated.
Patent TW-364060-B (TW)
Title: Contact probe for liquid crystal display test and liquid crystal display test device having the same
Inventor: YOSHIDA HIDEAKI
IPC: G01R1/067
Filed: 1997-06-12
Granted: 1999-07-11
Abstract: A contact probe for liquid crystal display test, in which the contact probe arranged in parallel is vertical relative to the first nonconductive resin film, and the terminals of the contact probe are adhered on the surface of the first nonconductive resin film by protruding the first nonconductive resin film, are characterized in that: a contact probe for liquid crystal display test is formed by further adhering a metal film on the said nonconductive resin film.
Patent TW-422849-B (TW)
Title: Process for hydrogenation of conjugated diene polymers and catalyst compositions suitable for use therein
Inventor: DE BOER ERIC JOHANNES MARIA
IPC: B01J31/22
Filed: 1997-06-19
Granted: 2001-02-21
Abstract: The invention provides a catalyst composition suitable for hydrogenation of polymers containing ethylenical unsaturation which comprises at least: (a) a titanium compound of the formula, wherein A1 represents an optionally substituted heterocyclic five membered ring comprising a phosphorous or nitrogen heteroatom, and A2 has the same meaning as A1 or alternatively represents an optionally substituted cyclopentadienyl group or indenyl group, and wherein L1 and L2 may be the same or difference and each may be selected from hydrogen, halogen, lower alkyl, phenyl, aralkyl, having from 7 to 10 carbons, lower alkoxy group, phenyloxy, phenylalkoxy group having from 7 to 10 carbon atoms, carboxyl, carbonyl, a ~CH2P(Phenyl)2, -CH2 Si(lower alkyl)3 or ~P(phenyl)2 group; and (b) an alkalimetal hydride, added as such or prepared in situ in the polymer solution from the alkalimetal terminated living polymer and/or from additionally added alkalimetal alkyl; and process for hydrogenation of polymers containing ethylenical unsaturation.
Patent TW-450995-B (TW)
Title: Deodorisation plant for fatty oils
Inventor: HILLSTROEM ANDERS
IPC: B01D3/34
Filed: 1997-07-03
Granted: 2001-08-21
Abstract: A deodorisation plant for treatment of fatty oils comprises a vessel (1) connected to a vacuum source. In the vessel there is a distillation column filled with structured packing material through which column the oil which shall be deodorised is brought to flow under influence of gravity and to meet a deodorisation gas in counter-current. In the vessel there is also a number of trays for collection of oil provided with drainage outlets in their lower part. The oil is treated with deodorisation gas in a batchwise way in these trays. The vessel is provided with an inlet (7) for oil and a connection (2) to a vacuum source in its upper part. In its lower part there is an outlet (9) for oil.
Patent TW-431898-B (TW)
Title: Energetic healer-a method and apparatus for improving the well-being of a human body
Inventor: CHOU ONES CHIN
IPC: A61N1/34
Filed: 1997-10-02
Granted: 2001-05-01
Abstract: Methods and apparatus are provided for improving the well-being of a human body. For the case of apparatus, such apparatus includes a stimulating mechanism for stimulating a human body with reoccurring bursts of energy. Such apparatus further includes a sensing mechanism for sensing the heartbeat of the human body and a synchronizing mechanism coupled to the stimulating mechanism and to the sensing mechanism for synchronizing the stimulation with the heartbeat of the human body by causing the energy bursts to occur at the same rate as the heartbeat of the human body. The synchronizing mechanism includes adjustable time delay circuitry for causing successive energy bursts to occur at the same relative point in successive heartbeat cycles such point being adjustable so as to occur at a selected position in the heartbeat cycle.
Patent TW-405161-B (TW)
Title: Scanning exposure apparatus and device manufacturing method using the same
Inventor: KORENAGA NOBUSHIGE
IPC: G03F7/20
Filed: 1997-09-23
Granted: 2000-09-11
Abstract: A scanning exposure apparatus includes a projection optical system, a reticle stage for scanningly moving a reticle relative to the projection optical system, a wafer stage for scanningly moving a wafer relative to the projection optical system, in a timed relation with the reticle scan movement, and a holding mechanism for holding the reticle on the reticle stage during the reticle scan movement, the holding mechanism including a first mechanism for confining an end edge portion of the reticle and a second mechanism for pressing the reticle from the above.
Patent TW-459045-B (TW)
Title: Detection and correction of abnormalities of cells having decreased level of glycine N-methyltransferase
Inventor: CHEN YI-MIN
IPC: A61K38/45
Filed: 1997-10-04
Granted: 2001-10-11
Abstract: The present invention relates to a method of detecting abnormalities of cells with glycine N-methyltransferase (GNMT) less than normal level and to a method of correcting the abnormalities.
Patent TW-391975-B (TW)
Title: Process for producing polyester
Inventor: MIYOSHI YASUO
IPC: C08G63/78
Filed: 1997-10-28
Granted: 2000-06-01
Abstract: A process for producing a polyester of uniform quality, in which a slurry of powdery aromatic dicarboxylic acid in a liquid diol is prepared and the resulting slurry is processed through an esterification step and a polycondensation step in the presence of a catalyst, is provided by performing the reactions in the esterification and the polycondensation in a stabilized condition, which process comprises recycling a liquid containing the unreacted diol and the catalyst separated from the reaction mixture in the polycondensation step back to the esterification step as recycling liquor, detecting the concentrations of diol, diol condensation product, catalyst and water in the recycling liquor in the course of being recycled back to the esterification step by a near infrared spectrophotometer of a noise level of at the highest 50 x 10<-6> Abs with a wave length repeatability of 0.01 nm or less as well as by an X-ray fluorescence analyzer and controlling the feed rate of each starting material based on the detected analytical values in such a manner that the totalized composition of the starting materials and the recycling liquor will be maintained in a predetermined range.
Patent TW-404016-B (TW)
Title: Method of forming contact plugs in semiconductor device having different sized contact holes
Inventor: CHO GYUNG-SU
IPC: H01L21/28
Filed: 1997-10-30
Granted: 2000-09-01
Abstract: The present invention discloses a forming method for metal wiring in a semiconductor device with different sized contact holes. The metal wiring in a semiconductor device according to the present invention is formed by the following processes. First, a semiconductor substrate on which an insulation film having a plurality of different sized contact holes is formed is provided. A barrier metal layer is then formed on the substrate and a first tungsten film is formed on entire surface of the barrier metal layer thick enough to fill relatively smaller contact hole among the different sized contact holes. Next, the first tungsten film and the barrier metal layer are removed to expose the top surface of the insulation film. A second tungsten film is formed selectively on the contact holes thick enough to completely fill relatively larger contact hole among the different sized contact holes and the surface of the substrate is then planarized.
Patent TW-366521-B (TW)
Title: Photoresist agent processing method and photoresist agent processing device
Inventor: AKIMOTO MASAMI
IPC: H01L21/02
Filed: 1997-11-03
Granted: 1999-08-11
Abstract: The present invention relates to the photoresist agent processing method and photoresist agent processing device for development of photoresist agent being coated having semiconductor chips or LCD substrates processing substrates in self spinning. The present invention aims to provide photoresist agent processing method and photoresist agent processing device after self-spinning system process of photoresist agent coating or development without the need to specially move the substrate to other location for alignment. Further, the present invention provides the photoresist agent processing method and photoresist agent processing device without the need to specially move the cleaning tools to other places for alignment after finishing each cleaning of cups. Placing and taking out the substrate continuously by the carrying arm mechanism to a plurality of processing chambers being the methods of processing the photoresist agent, (a) placing the substrate of aligned with the processing chamber with a reference region into the processing chamber and keeping the substrate with a discharging cup surroundingly in physically horizontal on the self-spinning chuck, (b) spinning the substrate while pouring processing fluid for processing the spinning substrate, (c) stop feeding the processing fluid and stop the substrate,(d) check the position of the reference region horizontal plane of the stopped substrate on the self-spinning chuck, (e) comparing the reference region position of the substrate achieved in said step (d) and the initial reference region position of the substrate when moved into the processing chamber, making both turn the substrate and the self-spinning chuck, (f) when the reference region position of the substrate achieved in said step (d) matches the initial reference region position of the substrate when it is moved into the processing chamber, removing the substrate from the processing chamber.
Patent TW-379277-B (TW)
Title: Honeycomb body, in particular a catalytic converter carrier body, with reinforced wall structure
Inventor: MAUS WOLFGANG
IPC: F01N3/28
Filed: 1997-12-16
Granted: 2000-01-11
Abstract: The invention concerns a honeycomb body (1), in particular a catalytic converter carrier body, with stacked and/or wound sheet layers (17; 18) of which at least a portion are structured sheet layers (18), thus forming passages through which a fluid can flow, wherein a portion of the sheet layers (17; 18) is of a first thickness (a) and a portion of the sheet layers (17; 18) is of a second thickness (b) which is greater than the first thickness (a), and wherein the honeycomb body (1; 21) contains in its interior a lattice-like structure (4; 14) which is formed from at least two sheet layers (17; 18) of the second thickness (b), of which at least one is a structured sheet layer (18) and which at least in a location-wise manner are connected together by a procedure involving the intimate joining of materials. Honeycomb bodies according to the invention, while affording good stability, can have particularly thin sheet layers whereby at least locally they have a particularly low thermal capacity.
Patent TW-372936-B (TW)
Title: Process for making hydrophobic silica with reduced surface area under neutral conditions
Inventor: BURNS GARY THOMAS
IPC: C01B33/159
Filed: 1998-02-20
Granted: 1999-11-01
Abstract: The present invention is hydrophobic silica gels having a reduced surface area and a method for their preparation under neutral conditions. The method comprises two steps, where in the first step the pH of a mixture comprising a silica hydrosol and colloidal silica is adjusted with a base to within a range of pH 3 to pH 6 to facilitate formation of a silica hydrogel having incorporated therein colloidal silica. In the second step the silica hydrogel is contacted with an organosilicon compound in the presence of a catalytic amount of a strong acid to effect hydrophobing of the silica hydrogel to form hydrophobic silica gal having a surface area within a range of 100 m<SP>2</SP>/g to 450 m<SP>2</SP>/g in the dry state. In a preferred process the hydrophobic silica gal is contacted with a sufficient quantity of a water immiscible organic solvent to convert the hydrophobic silica hydrogel into a hydrophobic silica organogel. A water soluble compound of cerium or iron may be added during conduct of the second step to improve heat stability of the hydrophobic silica gel.
Patent TW-420788-B (TW)
Title: Display type IC card
Inventor: LIN LI-JUNG
IPC: G06K19/067
Filed: 1998-03-06
Granted: 2001-02-01
Abstract: The display type IC card has a card disposed therein a microprocessor, a non-volatile EEPROM and a card reader interface circuit. There are provided a display, a solar energy battery and a touch button on the surface of the display type IC card. After the card reader interface receives the information of the card reader, the microprocessor decodes, decrypts, categorizes the information, and then saves the information in EEPROM for data storage. When an user touches the touch button, the IC card reads the information of the memory via micro-processor, and displays the information in Chinese/English characters in the display, so as to provide users to check the deposited value and to be free of the trouble of carrying various cards.
Patent TW-432174-B (TW)
Title: Power transmission device
Inventor: LIN BAN-CHIAN
IPC: B60K17/06
Filed: 1998-04-16
Granted: 2001-05-01
Abstract: Disclosed is a power transmission device capable of transmitting mechanical and/or electrical power. The device incorporates a power transmission to transmission effect redistribution mechanism. The effect redistribution mechanism redistributes the optimum performance section within the entire operation speed range of the power transmission or re-map the entire operation speed range (including the initial stop state) of the power transmission device. An optimum state is regulated by incorporating the entire operation speed range (including the low speed). In a mechanical version of this device, a circulating gear system serves as a redistribution mechanism. In an electromagnetic version, a rotary converter serves as a redistribution mechanism, and the power transmission is an electromagnetic device. The mechanical version of the power transmission device is capable of processing mechanical-to-mechanical power transmission. The various electromagnetic versions of the power transmission device can process one or more modes of mechanical-to-mechanical, electrical-to-mechanical, mechanical-to-electrical, and electrical-to-electrical power transmission. Both versions of the power transmission device is capable of recycling power.
Patent TW-418141-B (TW)
Title: An apparatus for controlling a rate of pouring molten metal and a slide plate used therefor
Inventor: YAMAMOTO HIRONORI
IPC: B22D41/24
Filed: 1998-04-28
Granted: 2001-01-11
Abstract: This invention intends to provide an apparatus for controlling a rate of pouring molten metal and a slide plate used therefor in which a sliding resistance of a slide frame is small and a pressing force around a nozzle hole is stabilized so that there is no fear that any trouble such as a molten metal leakage occurs and further, a structure thereof is simple and maintenance cost is low. Hence, using the driving device 9 to control the openness of the pouring molten metal apparatus of nozzle 5 on the fixing plate 4 of the sliding frame 25 and the nozzle 28 of sliding plate 27. Installing a linearly configured guidance device 35 comprises of steel balls 36 on the both side of sliding plate 27 and sliding frame 25 and spring 47.
Patent TW-375529-B (TW)
Title: Data transmission method and game system using the same
Inventor: NIIDUMA NAOKI
IPC: H04L7/00
Filed: 1998-05-13
Granted: 1999-12-01
Abstract: This invention provides the data transmission method between game device and its peripheral devices and game device using the same. The invention is characterized by dividing data strings into odd bit strings and even bit strings. Each bit of odd bit string data is respectively assigned between pulse waves of a first pulse wave string that are spaced apart in fixed distance to form the first pulse signal (SDCKA). Each bit of even bit string data is respectively assigned between pulse waves of a second pulse wave string that are spaced apart in fixed distance to form the second pulse signal (SDCKB). The time axis of these two pulse signals are adjusted, such that the chronometric component of first pulse string signal is situated at the data part of second pulse string signal, and the chronometric component of second pulse string signal is situated at the data part of first pulse string signal. The adjusted first and second pulse string signals (SDCKA, SDCKB) are used to transmit data.
Patent TW-378353-B (TW)
Title: Manufacture of semiconductor substrate
Inventor: SAITO MINA
IPC: H01L27/12
Filed: 1998-05-28
Granted: 2000-01-01
Abstract: To reduce a transition density present at a surface silicon layer of an SIMOX substrate, by performing annealing in a reducing atmosphere when an implanted oxygen atom reacts with a silicon to produce SiO2. Oxygen ion 16O+ is implanted to a single-crystal silicon substrate at a specified depth. Thus, a high-concentration oxygen ion implantation layer having oxygen ion dosage less than 5íÐ10<17>/cm2 is formed. Oxygen in the high- concentration ion implantation layer reacts with a silicon to produce SiO2 by thermal treatment in a reducing atmosphere. A low-temperature anneal process for said ion-implanted layer in reducing atmosphere as hydrogen at an early stage of thermal treatment to form SiO2 is ended, before normal anneal process is performed. A crystal is stabilized with the anneal process, and the high-concentration oxygen ion implantation layer changes to an embedded oxide film.
Patent TW-409150-B (TW)
Title: Evaporation apparatus, organic material evaporation source and method of manufacturing thin organic film
Inventor: NAGASHIMA NAOKI
IPC: C23C14/56
Filed: 1998-05-29
Granted: 2000-10-21
Abstract: An inactive gas is introduced into an organic material evaporation source to place a thin organic film material in the organic material evaporation source in an atmosphere having a relatively high pressure, and the temperature of the thin organic film material is increased up to a certain temperature. Then, the organic material evaporation source is evacuated to lower the pressure around the thin organic film material for thereby causing the thin organic film material to emit a vapor. Since no wasteful vapor is emitted from the thin organic film material, the thin organic film material is effectively utilized. Because the inactive gas acts as a heating medium, the temperature of the thin organic film material is increased at  a high rate, and the thin organic film material is uniformly heated. When the temperature of the thin organic film material is lowered in an inactive gas atmosphere, it can be lowered at a high rate. The inactive gas is introduced directly into the organic material evaporation source by an on-off valve, the time required to evacuate the organic material evaporation source is reduced. A liquid thin organic film material may be heated by a heating medium in the organic material evaporation source, so that the liquid thin organic film material will not be heated to a temperature higher than the temperature of the heating medium, and bence will not suffer bumping due to a temperature overshooting.
Patent TW-373407-B (TW)
Title: General use image treating unit
Inventor: WANG TZU-HSIN
Filed: 1998-08-18
Granted: 1999-11-01
Abstract: The image treating unit in this invention, is mainly formed with: a first addition device for additioning a first input terminal and second input signals; a signal delay device for delaying the output of the first addition device; a second addition device for additioning undelay output of first addition device and output of signal delay device; and a first addition/subtraction device for additioning or subtracting output of second addition device and signal of a third input terminal. Image treating unit can selectively add different combinations of absolute value treating device, accumulating device, second addition/subtracting device, multiplication device and weighting treating device etc, and can be used for computation treatment such as at one-direction internal inserting or two-direction internal inserting motion compensation, block matching, motion estimation difference, loop filtering, defuse curve transformation (DCT) and inverse defuse curve transformation (IDCT), quantization, and inverse quantization etc, for reducing the utilized information frequency width, increasing image treating system operating efficiency.