baber/WOPTO huggingface dataset:
Patent TW-568924-B (TW)
Title: Polyester containing tertiary carboxyl groups, process for its preparation and thermosetting powder compositions containing it
Inventor: MOENS LUC
IPC: C08G63/60
Filed: 1999-02-05
Granted: 2004-01-01
Abstract: The present invention relates to a polyester bearing tertiary carboxyl groups, characterized in that it consists of: (a) 8.1 to 35 mol of an aliphatic or cycloaliphatic polyol, (b) 9.1 to 36 mol of an aliphatic, cycloaliphatic or aromatic polycarboxylic acid, (c) 1.6 to 2.8 mol of an aliphatic, cycloaliphatic or aromatic compound containing, on the one hand, a tertiary carboxyl group, and, on the other hand, either a primary or secondary carboxyl group or a primary or secondary hydroxyl group. The polyester of the invention is prepared in several steps, the first steps consisting in preparing a prepolyester by condensation between (a) an aliphatic or cycloaliphatic polyol, and (b) an aliphatic, cycloaliphatic or aromatic polycarboxylic acid, the final step consisting in condensing this prepolyester with (c) an aliphatic, cycloaliphatic or aromatic compound containing, on the one hand, a tertiary carboxyl group, and, on the other hand, either a primary or secondary carboxyl group, or a primary or secondary hydroxyl group. This polyester is used in thermosetting powder compositions, as a mixture with a crosslinking agent which is, more particularly, a beta-hydroxyalkylamide. These compositions give coatings which have an excellent surface appearance, good flexibility and good resistance to bad weather.
Patent TW-516946-B (TW)
Title: Zipper bag and a slider for opening/closing the bag
Inventor: ISHIZAKI AKIRA
IPC: B65D33/25
Filed: 1999-02-20
Granted: 2003-01-11
Abstract: A slider which has a center leg and a pair of side legs, and a zipper bag provided with the slider. The zipper bag has a zipper composed of a concave portion and a convex portion which are formed on flaps and are capable of engaging with each other. The center leg of the slider works to open the zipper, and the side legs of the slider work to close the zipper. Also, the slider may have a cutter portion so as to cut a sealed portion of a bag.
Patent TW-480198-B (TW)
Title: Cutting tool assembly and cutting insert therefor
Inventor: MEN YURI
IPC: B23C5/10
Filed: 1999-02-22
Granted: 2002-03-21
Abstract: A cutting insert holder, for example ball nose end mill, and a cutting insert. The cutting insert holder has a lower clamping jaw resiliently an upper clamping jaw. The upper clamping is provided with two elongated spaced apart parallel grooves. The cutting insert has an upper surface provided with two elongated spaced apart parallel ridges. The cutting insert is retained in the cutting insert holder by means of a screw which passes through a through bore in the upper and lower jaws of the insert holder and through a through bore in the cutting insert and the two elongated ridges in the upper surface of the cutting insert cooperate with the two elongated parallel grooves in the lower surface of the upper clamping jaw.
Patent TW-411548-B (TW)
Title: Semiconductor device having metal silicide film and manufacturing method thereof
Inventor: FUKASE TADASHI
IPC: H01L21/285
Filed: 1999-03-08
Granted: 2000-11-11
Abstract: The present invention discloses a semiconductor device, and a manufacturing method thereof, which is obtained by forming a logic circuit part capable of performing a high speed arithmetic processing and memory cell part of a DRAM having a high information holding characteristic, on the same substrate. In a semiconductor device in which a first MOS transistor having high concentration impurity diffused layers as source and drain regions are formed in a logic circuit part, and a second MOS transistor having relatively low concentration impurity diffused layers as source and drain regions are formed in a memory cell part of the DRAM, the device is given a structure where metal silicide films are formed on the impurity diffused layers of the first transistor, whereas no metal silicide films are formed on the impurity diffused layers of the second transistor.
Patent TW-589141-B (TW)
Title: Synergistically acting herbicidal mixtures
Inventor: SIEVERNICH BERND
IPC: A01N43/80
Filed: 1999-06-16
Granted: 2004-06-01
Abstract: A synergistic herbicidal mixture comprising (A) at least one 3-heterocyclyl-substituted benzoyl derivative of the formula I, in which the variables have the following meanings: R1, R3 are halogen, C1-C6-alkyl, or C1-C6-alkylsulfonyl; R2 is a heterocyclic radical selected from the group: thiazol-2-yl, thiazol-4-yl, thiazol-5-yl, isoxazol-3-yl, isoxazol-4-yl, isoxazol-5-yl, 4,5-dihydroisoxazol-3-yl, 4,5-dihydroisoxazol-4-yl and 4,5-dihydroisoxazol-5-yl, it being possible for the nine radicals mentioned to be unsubstituted or mono- or polysubstituted by halogen, C1-C4-alkyl, C1-C4-alkoxy, C1-C4-haloalkyl, C1-C4-haloalkoxy or C1-C4-alkylthio; R4 is hydrogen; R5 is C1-C6-alkyl; R6 is hydrogen; or one of its environmentally compatible salts; and (B) a synergistically effective amount of at least one herbicidal compound from the group of the acetyl-CoA carboxylase inhibitors (ACC), acetolactate synthase inhibitors (ALS), amides, auxin herbicides, auxin transport inhibitors, carotenoid biosynthesis inhibitors, enolpyruvylshikimate 3-phosphate synthase inhibitors (EPSPS), glutamine synthetase inhibitors, lipid biosynthesis inhibitors, mitosis inhibitors, protoporphyrinogen IX oxidase inhibitors, photosynthesis inhibitors, and growth substances.
Patent TW-434827-B (TW)
Title: Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication
Inventor: LEE GILL YONG
IPC: H01L21/314
Filed: 1999-06-29
Granted: 2001-05-16
Abstract: A semiconductor device and method of forming a patterned conductive layer on a semiconductor substrate are provided so as to prevent fluorine substance outflow from a fluorinated silicate glass (FSG) layer thereon and simultaneously so as to suppress back reflection of light waves into a photoresist layer during photolithographic processing. The substrate is coated in turn with a conductive layer, a dielectric (e.g., silicon dioxide) liner, a FSG layer, a silicon oxynitride layer preventing fluorine substance outflow therethrough from the FSG layer and also forming an antireflective coating (ARC), and a photoresist layer. The photoresist layer is exposed and developed to uncover pattern portions of the underlying silicon oxynitride layer. The uncovered pattern portions of the silicon oxynitride ARC layer and corresponding underlying portions of the FSG layer and dielectric liner are then removed, e.g., by a single dry etching step, to expose pattern portions of the conductive layer for metallization. Upon metallization, the substrate is provided with a combination of the FSG layer and silicon oxynitride layer, in which the silicon oxynitride layer prevents fluorine substance outflow therethrough from the underlying FSG layer to an overlying conductive layer.
Patent TW-486454-B (TW)
Title: Composite material for positive temperature coefficient thermistor ceramic for positive temperature coefficient thermistor and method for manufacturing ceramics for positive temperature coefficient thermistor
Inventor: NABIKA YASUHIRO
IPC: H01C7/02
Filed: 1999-07-21
Granted: 2002-05-11
Abstract: The object of the present invention is to provide a ceramic for the PTC thermistor having a resistivity at room temperature of 5 Ω.cm or less, static withstanding voltage of 60 V/mm or more and temperature resistance coefficient of 9.0%/DEG C along with having small dispersion of the resistance, wherein the ceramic for the PTC thermistor is composed of principal components of 30 to 97 molar percentage (mol%) of BaTiO3, 1 to 50 mol% of PbTiO3, 1 to 30 mol% of SrTiO3 and 1 to 25 mol% of CaTiO3 (the total content of them accounts for 100 mol%), as well as 0.1 to 0.3 mole of samarium oxide in terms of Sm element, 0.01 to 0.03 mole of manganese oxide in terms of Mn element and 0 to 2.0 mole of silicon oxide in terms of Si element relative to 100 moles of the principal components, the composite material being preferably heat-treated in an oxidative atmosphere after being fired in a reducing atmosphere for obtaining the ceramic.
Patent TW-505644-B (TW)
Title: N-substituted azabicycloheptane derivatives, their preparation and use
Inventor: STEINER GERD
IPC: A61K31/425
Filed: 1999-08-12
Granted: 2002-10-11
Abstract: Compounds of the formula I, in which R1, R2, R3 and R4 have the meanings stated in the description, are described. The novel compounds are suitable for controlling diseases. An N-substituted 3-azabicyclo[3.2.0]heptane derivative of the formula I, in which R1 is fluorine or chlorine, R2 and R3 are hydrogen or C1-C3-alkyl, and R4 is chlorine, and the salts thereof with physiologically tolerated acids.
Patent TW-427061-B (TW)
Title: Surface acoustic wave device
Inventor: KANEDA YASUFUMI
IPC: H03H9/02
Filed: 1999-10-05
Granted: 2001-03-21
Abstract: A surface acoustic wave device which reflects a surface acoustic wave is provided. The reflector of the surface acoustic wave device includes electrode fingers. The electrode fingers are disposed at predetermined intervals d, and are divided into five groups by the width. The widths w of the electrode fingers are varied between widths w1, w2, and w3, so that the reflectance becomes similar to the hamming function.
Patent TW-459165-B (TW)
Title: Method for the rework of photoresist
Inventor: WU SHU-CHING
IPC: G03F7/42
Filed: 1999-10-22
Granted: 2001-10-11
Abstract: The present invention provides a kind of method to rework photoresist so as to effectively decrease the process time for the rework of photoresist. A bottom layer, on which the pattern is designed to form, has been formed on a semiconductor, and a layer of positive photoresist pattern is formed on the bottom layer. After performing an after-development-inspection (ADI) onto the photoresist, it is necessary to conduct the rework process of photoresist if pattern is abnormal, such as abnormal CD, or too overlay shift and so on. The method for the rework of photoresist at least contains the following steps. The semiconductor substrate is placed in a wet stripper in order to remove most of the photoresist pattern layer. Then, this semiconductor substrate is placed in a single wafer processing chamber and a dry stripping method is used to completely remove the residual photoresist pattern layer. After the photoresist is completely removed, a new photoresist layer is formed on the bottom layer again.
Patent TW-467922-B (TW)
Title: Method for the preparation of polyester fibers of excellent water absorbency
Inventor: JO DEOG-JAE
IPC: D01F6/62
Filed: 1999-11-18
Granted: 2001-12-11
Abstract: Disclosed is a method for preparing polyester fibers whose water absorbency is comparable to that of natural fibers. At a suitable addition time from polyester polymerization to a stage prior to spinning, hydrophilic inorganic particles such as calcium oxide particles, magnesium oxide particles, and manganese oxide particles are added at an amount of 0.01-50 weight % based on the total weight of the fibers. This method enables polyester fibers to have superior water absorbency as well as excellent physical properties. As the inorganic particles are low-priced, this helps to keep down the total cost of producing the fibers.
Patent TW-527609-B (TW)
Title: Improved conductive polymer device and method of manufacturing same cross-reference to related applications
Inventor: BARRETT ANDREW BRIAN
IPC: H01C1/14
Filed: 1999-12-16
Granted: 2003-04-11
Abstract: An electronic device has three conductive polymer layers sandwiched between two external electrodes and two internal electrodes. The electrodes are staggered to create a first set of electrodes, in contact with a first terminal, alternating with a second set of electrodes in contact with a second terminal. The device is manufactured by: (1) providing (a) a first laminated substructure comprising a first polymer layer between first and second metal layers, (b) a second polymer layer, and (c) a second laminated substructure comprising a third polymer layer between third and fourth metal layers; (2) isolating selected areas of the second and third metal layers to form, respectively, first and second arrays of internal metal strips; (3) laminating the first and second laminated substructures to opposite surfaces of the second conductive polymer layer to form a laminated structure; (4) isolating selected areas of the first and fourth metal layers to form, respectively, first and second arrays of external metal strips; (5) forming insulation areas on the exterior surfaces of the external metal strips; and (6) forming a plurality of first terminals, each electrically connecting a metal strip in the first internal array to a metal strip in the second external array, and a plurality of second terminals, each electrically connecting a metal strip in the first external array to a metal strip in the second internal array; and (7) singulating the laminated structure into a plurality of devices, each having three polymer layers connected in parallel between first and second terminals.
Patent TW-I223010-B (TW)
Title: Bath composition of electroformed nickel-rhenium alloy
Inventor: WU HSIEN-MING
IPC: C25D11/06
Filed: 2000-02-11
Granted: 2004-11-01
Abstract: The present invention discloses a new composition to produce in microcracking-free electroformed nickel-rhenium alloy. No sulfur-embrittlement was found after heating treatment of the electroformed alloys. The studied electroforming bath contains at least nickel sulfamate, potassium perrhenate, pH buffer, and sulfur-containing additive. In addition to reduce the microcracking, the additive also increase the hardness of the electroformed alloys.
Patent TW-451502-B (TW)
Title: Semiconductor device and method for manufacturing same
Inventor: SAKAZAKI ATSUSHI
IPC: H01L25/10
Filed: 2000-02-16
Granted: 2001-08-21
Abstract: A semiconductor chip 1 has a first electrodes 11, 12 on a main surface 0a thereof, a second electrode 13 made of a conductive resin electrode having a base portion 131 in contact with a surface 1b opposite to the main surface 1a of the semiconductor chip 1, and a side portion 132 extended from one end portion of the base portion 131 in the direction toward the main surface 1a of the semiconductor chip 1, and an end part of the side portion 132 of the second electrode 13 is provided over the main surface 1a of the semiconductor chip 1.
Patent TW-432137-B (TW)
Title: Roadblock structure
Inventor: WU HUNG-SHIOU
IPC: E01F15/02
Filed: 2000-03-14
Granted: 2001-05-01
Abstract: The present invention relates to a kind of roadblock structure made of waste tires. Two or several waste tires are evenly connected and interlocked with metal bars. The end of each bar is fixed with a ring, and the inner space of tires is filled with concrete. The surface of the structure has the function of elasticity and absorbency of shock. It offer a safe crash proof effect and a economic benefit of waste recycle.
Patent TW-I237044-B (TW)
Title: Flame resistant polyvinylarene polymer compositions
Inventor: RAUNIYAR GOVIND
IPC: C08J9/24
Filed: 2000-03-20
Granted: 2005-08-01
Abstract: Composition containing polyvinylarene polymer particles, which particles are bound to each other by a binder composition based on a silicate and an organic polymer having a weight average molecular weight of at least 500,000 g/mol, as measured in accordance with gel permeation chromatography. The invention furthermore relates to a process for the preparation of such compositions, to the binder composition per se and to a kit of parts.
Patent TW-457437-B (TW)
Title: Interconnected processing nodes configurable as at least one non-uniform memory access (NUMA) data processing system
Inventor: BROCK BISHOP CHAPMAN
IPC: G06F15/177
Filed: 2000-03-20
Granted: 2001-10-01
Abstract: A data processing system includes a plurality of processing nodes that each contain at least one processor and data storage. The plurality of processing nodes are coupled together by a system interconnect. The data processing system further includes a configuration utility residing in data storage within at least one of the plurality of processing nodes. The configuration utility selectively configures the plurality of processing nodes into either a single non-uniform memory access (NUMA) system or into multiple independent data processing systems through communication via the system interconnect.
Patent TW-494595-B (TW)
Title: Method for manufacturing active material of positive plate and method for manufacturing nano-aqueous electrolyte secondary cell
Inventor: LI GUOHUA
IPC: C01B25/37
Filed: 2000-03-31
Granted: 2002-07-11
Abstract: This invention provides a method for producing a positive electrode active material including a mixing step of mixing a plurality of substances to give a precursor and a sintering step of sintering and reacting the precursor obtained by the mixing step, in which these substances provide a starting material for synthesis of a compound represented by the general formula LixMyPO4 where x is such that 0 < x ≤2, y is such that 0.8 < y ≤ 1.2 and M includes at lest one of 3d transition metals. A reducing agent is added in the above mixing step to the precursor to render it possible to prepare a positive electrode active material capable of reversibly and satisfactorily doping/undoping lithium.
Patent TW-I238163-B (TW)
Title: Pyrrolotriazine inhibitors of kinases
Inventor: HUNT JOHN T
IPC: C07D487/04
Filed: 2000-05-18
Granted: 2005-08-21
Abstract: The present invention provides compounds of formula (I) and pharmaceutically acceptable salts thereof. The formula (I) compounds inhibit the tyrosine kinase activity of growth factor receptors such as VEGFR-2, FGFR-1, PDGFR, HER-1, HER-2, thereby making them useful as anti-cancer agents. The formula (I) compounds are also useful for the treatment of other diseases associated with signal transduction pathways operating through growth factor receptors.
Patent TW-465224-B (TW)
Title: Digital data watermarking system using novel watermark insertion and detection methods
Inventor: FURON TEDDY
IPC: H04N7/08
Filed: 2000-05-19
Granted: 2001-11-21
Abstract: The watermarking system uses a first series of parameters (v, h), the private key (KPRI), for the insertion of the watermark, and a second series of parameters (|H(f)|), the public key (KPUB), for the detection of the watermark, so that knowledge of the public key does not make it possible to know the private key and does not make it possible to delete or modify the watermark. The insertion of the watermark is performed by adding a pseudo random noise sequence (v), filtered by a filter with impulse response (h), to the data to be watermarked. The detection of the watermark is performed by searching through the data received for whether they contain noise which has been filtered by a filter with predefined spectral response (H(f)). Application to copy protection.
Patent TW-487561-B (TW)
Title: Device for preparing coffee and method for preparing a coffee drink using said device
Inventor: JORGENSEN CARSTEN
IPC: A47J27/21
Filed: 2000-05-31
Granted: 2002-05-21
Abstract: With a device for preparing coffee of the type, where water in a closed container (1) is being boiled, after which the water through an ascension pipe (12) is pressed into an open compartment (6), where the boiling water extracts aromatic carriers from the ground coffee, after which the prepared coffee drink is filtered back to the closed compartment (1) through a filter arranged at the outlet from the open compartment, it is the aim to provide a device for preparing coffee, where the aromatic components in the ground coffee is utilised in the best way under careful temperature monitoring, where the user can do without external heat sources, and where the possibility in advance for deciding a special initiating time and later deciding a temperature sequence are present. This aim is met if the closed container (1) is equipped with at the least one heating element (10), which together and/or single have a suitable power for bringing the water in the closed compartment (1) to the boil, and that the heating element complex is controlled depending on time and temperature using suitable control means and have at the least two power steps with a view to keeping the temperature of the coffee drink within a narrow temperature range below the boiling point of the coffee drink.
Patent TW-548337-B (TW)
Title: Device to supervise the layer-depositions in a process-chamber
Inventor: ZIEGLER JURGEN
IPC: G01B11/06
Filed: 2000-06-28
Granted: 2003-08-21
Abstract: A device is suggested to supervise the layer-depositions in a process-chamber, composed of a light-source (1, 8), a sensor-element (4) and at least one light-detector (5), wherein the sensor-element is suitably designed, so as to influence the intensity of the light-beam (10), which is measured from the detector, through the thickness of the layer grown on the sensor-element, and a method to measure the transparent light-intensity with this device. The sensor-element has a continuous opening, through which the intensity of the light is observed depending on the opening grown by the thickness of the growing layer.
Patent TW-594113-B (TW)
Title: Thin film transistor, fabrication method thereof and liquid crystal display having the thin film transistor
Inventor: ZHANG HONGYONG
IPC: H01L21/84
Filed: 2000-07-24
Granted: 2004-06-21
Abstract: The present invention relates to a thin film transistor, a fabrication method thereof and a liquid crystal display having the thin film transistor, and an object of the present invention is to provide a thin film transistor which improves a fabrication yield, a fabrication method thereof and a liquid crystal display having the thin film transistor. In a bottom-gate-type thin film transistor 1 having a gate electrode 4 formed on a substrate, a gate insulating film 6 formed on the gate electrode, an operational semiconductor film 8 formed on the gate insulating film 6 on the gate electrode 4, a channel protection film 3 formed on the operational semiconductor film, and a source and a drain electrodes 14 and 15 formed on both sides of the top surface of the channel protection film 3 connected to the operational semiconductor film with the operational semiconductor, and the channel protection film 3 has a first insulating layer 10 contacting to an upper interface of the operational semiconductor film 8 and a second insulating layer 11 formed on the first insulating layer.
Patent TW-466561-B (TW)
Title: Method and apparatus for cleaning substrates
Inventor: KATAKABE ICHIRO
IPC: H01L21/00
Filed: 2000-10-06
Granted: 2001-12-01
Abstract: This invention provides the method and apparatus for cleaning substrates. It can prevent the growth of native oxide on the circuit formation area of substrate surface and also remove wiring materials such as copper from the edge and back side of substrate and can freely determine the edge exclusion. An acid solution is continuously supplied to a central portion of a surface of a substrate while the substrate is rotating, and an oxidizing agent solution is continuously or intermittently supplied to a periphery of the substrate.