baber/WOPTO huggingface dataset:
Patent TW-376490-B (TW)
Title: A recognition process
Inventor: LOUDON GARETH HUGH
IPC: G06V30/10
Filed: 1998-09-05
Granted: 1999-12-11
Abstract: A recognition process for handwritten characters, including generating sub-segments representing at least one character stroke, the sub-segments each having a boundary enclosing the at least one stroke of the sub-segment, merging the sub-segments when the distance between centroids of the sub-segments are less than a predetermined threshold, and generating segments representing possible characters from the sub-segments. A recognition process for handwritten characters, including: generating sub-segments representing at least one character stroke, said sub-segments each having a boundary enclosing the at least one stroke of the sub-segment; merging said sub-segments when the distance between centroids of the sub-segments are less than a predetermined threshold; and generating segments representing possible characters from said sub-segments.
Patent TW-416250-B (TW)
Title: Arrangement comprising insertion means for the identification of an information packet stream carrying encoded digital data by means of additional information
Inventor: KANDLER MICHAEL
IPC: H04N19/102
Filed: 1998-11-18
Granted: 2000-12-21
Abstract: A system (1; 49; 65) comprising a data source (2, 4; 50; 66) for supplying an information packet stream containing digital data coded in accordance with a first coding method and/or a second coding method, a processing device (3; 51; 69) for processing an information packet stream, and a data sink (4, 5, 6; 52, 53; 67) for receiving an information packet stream comprises insertion means (37; 62; 71), which the insertion means (37; 62; 71) comprise detection means (38) adapted to detect digital data contained in a sub-stream of the information packet stream and coded in accordance with a second coding method and to supply control information upon detection of such data, and a packet stream generator (16) which, when control information appears, is adapted to insert further digital data coded in accordance with the first coding method and containing additional information about the sub-stream into further information packets of the information packet stream.
Patent TW-400557-B (TW)
Title: Partial silicidation method to form shallow source/drain junctions
Inventor: MAA JER-SHEN
IPC: H01L21/28
Filed: 1998-11-21
Granted: 2000-08-01
Abstract: A process of forming silicide at uniform rates across the entire source/drain region is provided. A two-step annealing method permits the thickness of the silicide formed on the edge of a silicon electrode to be substantially the same as it is in the center of the electrode. A first, low temperature anneal begins the salicidation process across the source/drain electrode surface. The time and temperature are controlled so that the metal is only partially consumed. The annealing is interrupted to remove excess silicidation metal, especially the unreacted metal overlying oxide areas neighboring the silicon electrode. Then, the silicidation is completed at a higher temperature anneal. Because the excess metal has been removed, the resulting silicide layer is uniformly flat, permitting the transistor to be fabricated with shallow junction areas and low leakage currents. In one embodiment of the invention, the crystalline structure of source and drain surfaces is annihilated before the deposition of metal, to lower annealing temperatures and add precise control to the silicidation process. A transistor having a uniformly thick silicide layer, fabricated in accordance with the above-mentioned method, is also provided.
Patent TW-593295-B (TW)
Title: A process for producing 2-(methylthio)-5-(trifluoromethyl)-1,3,4-thiadiazole using methyldithiocarbazinate and trifluoroacetic acid
Inventor: DESAI VIJAY C
IPC: C07D285/125
Filed: 1998-12-11
Granted: 2004-06-21
Abstract: The present invention provides a process of making 2-(methylthio)-5-(trifluoromethyl)-1,3,4-thiadiazole. The process includes the steps of (a) reacting methyldithiocarbazinate with a molar excess of trifluoroacetic acid; and (b) removing the water and excess trifluoroacetic acid. Water and excess trifluoroacetic acid are preferably removed via distillation.
Patent TW-396659-B (TW)
Title: IC card connector
Inventor: NISHIOKA TORU
IPC: H01R13/633
Filed: 1998-12-23
Granted: 2000-07-01
Abstract: This invention is a device for IC card connector. The traditional device for IC card connector, the following are the three traditional steps to withdraw our IC cards from the slot: the push lever is kept at position of the first convex. Then, the lever is pushed to the position of the second convex. Finally, the lever is pulled back into the position of push-in. Therefore, this may cause some complicated problems during operation performance. This invention is aimed at the IC card1 positioned at insertion status, when the pushrod 5 pertrudes to the first convex status is pushed, it withdraws IC card1 through the transmitting pin 15, or although one does not hope to withdraws IC card1 , but mistakely let the pushrod 5 protrudes, then pull the pushrod 5 from the first convex, which makes it in the second convex status, if we push it from the direction of push, since the transmitting pin 15 is back moved, which relieves the expel motion of the IC card1 and maintains the status of insertion. Thus compares with the traditional method, the whole process of IC card withdrawal is, therefore, simplified; this connector device may provide users with an well-operated device.
Patent TW-395030-B (TW)
Title: An improving method to the capacitance depletion of the hemispherical grain (HSG) DRAM structure
Inventor: LI YU-HUA
IPC: H01L21/8242
Filed: 1999-01-08
Granted: 2000-06-21
Abstract: This invention is a discovery of an improving method to the capacitance depletion of the hemispherical grain (HSG) DRAM structure. The procedure comprises of the following steps: initially, provide a substrate board with the capacitor lower layer's electrode board which has equiped with a HSG surface capacitor, followed by the sediment of a layer of Phosphorus-doped oxide on the surface to proceed with the annealing procedure. Pushing the Phosphorus of the oxide layer to diffuse the HSG. After the elimination of the oxide layer, it may precipitate the capacitor's dielectric layer and produce the capacitor electrode board on the upper layer to achieve the capacitor producing with HSG structure and resolve the problem of capacitance depletion.
Patent TW-401712-B (TW)
Title: Observation apparatus and method of controlling light emission thereof
Inventor: KUROKAWA SHUJI
IPC: G01N21/01
Filed: 1999-01-14
Granted: 2000-08-11
Abstract: The invented inspection device is to irradiate the light from illuminating portion 13, 19 on the inspected object 3a and using the camera 7 to receive the reflection from the inspected object 3a in order to inspect the inspected object 3a. The illuminating portion is composed of a plurality of illuminating objects 13a, 19. The driver 35a of illuminating controller 35 is used to set the illuminating time of each illuminating objects 13a, 19; and illuminate selectively the illuminating objects 13a, 19 to be synchronized with the vertical synchronous signal VD of the camera 7. When the illuminating time is expired, the illuminating objects 13a, 19 will be extinguished.
Patent TW-516205-B (TW)
Title: Formation method of local interconnection
Inventor: SHIU JEN-CHIOU
IPC: H01L23/522
Filed: 1999-02-04
Granted: 2003-01-01
Abstract: A formation method of local interconnection is provided. First, a substrate already formed some structure is provided. A first dielectric layer is used to cover the substrate and the first dielectric layer is planarized. Then a first metal film is formed on the first dielectric layer and a second dielectric layer is then formed on the first metal and dielectric layers. The second dielectric layer is planarized. A contact pattern is defined on the second dielectric layer and the first and second dielectric layers are partially removed to form contact opening through the first dielectric layer to the substrate or exposing the first metal layer. Metal plugs are fill in the contact opening. Then a second metal layer is formed on the second dielectric layer and the second metal layer is defined.
Patent TW-434349-B (TW)
Title: Shoe press belt and its production
Inventor: IMADA MINENARI
IPC: D21F3/02
Filed: 1999-02-25
Granted: 2001-05-16
Abstract: This invention relates to a shoe press belt and its production providing high strength in the machine (MD) direction as well as in the CMD direction, and having good productivity with dimensional stability. A shoe press belt comprises an endless first resin layer formed on a polished surface of a rotatable mandrel; a base fabric layer comprising a woven fabric leaf arranged over the entire outer periphery of the first resin layer, at least one of the sets of intersecting threads of the fabric leaf being high-strength threads extending axially along the mandrel; a bobbin layer comprising high-strength thread circumferentially wound in a spiral on the outer periphery of the base fabric layer; and an endless second resin layer on the outer periphery of the bobbin layer, the second resin layer being in contact with the first layer through the base fabric layer and the bobbin layer.
Patent TW-382582-B (TW)
Title: Cam adjuster mechanism for break mechanism in fishing reel
Inventor: BAN-KOU SHENG
IPC: A01K89/033
Filed: 1999-04-15
Granted: 2000-02-21
Abstract: The present invention relates to a fishing reel that has a variable brake mechanism. The variable brake mechanism includes a plurality of small brake weights mounted on radially extending shafts. The brake weights are positioned within a brake race that is fixed to the fishing reel body. The brake weights are further configured to rotate about a spool shaft with the spool about which fishing line is wound, upon rotation of the spool, the brake weights are urged radially outward due to centrifugal forces. The brake weights further formed with collars that extend through an opening in a cam collar. The openings in the cam collar define cam surfaces which, upon rotation of the cam collar with respect to the spool, urge the brake weights into and away from a position where the weights may contact the brake race. An adjuster dial accessible from the outer surface of the fishing reel body is configured to selectively engage the cam collar for rotation of the cam collar.
Patent TW-444212-B (TW)
Title: Thick film resistor compositions for making heat-transfer tapes and use thereof
Inventor: MATSUNO HISASHI
IPC: H01C17/06
Filed: 1999-04-21
Granted: 2001-07-01
Abstract: To provide a technique capable of obtaining thick-film resistors of any resistance value and shape without a particular need for trimming in order to be able to modify and select the resistance value which is determined by the length, width and thickness of the resistor. A thick-film resistor is produced using a thick-film resistor composition for heat-transfer tape formation, comprising from 54 to 76% by weight of a mixed inorganic powder containing ruthenium oxide and/or ruthenium pyrochlore oxide powder as the electrically conductive ingredient, and a glass powder composed primarily of PbO, SiO2 and Al2O3, from 14 to 23% by weight of a resin binder, and an organic vehicle containing from 10 to 23% by weight of an organic solvent. This composition is coated onto a polyethylene terephthalate base film and dried so as to remove the organic solvent present, in this way obtaining a thick-film resistor-forming heat-transfer tape in which a thick-film resistor layer of a prescribed thickness has been deposited and formed. A base film portion of the resulting heat transfer tape corresponding to a selected thick-film resistance shape is heated, whereupon the above thick-film resistor layer portion melts, and is transferred to and deposited on a dielectric substrate, then subsequently fired, thereby giving the thick-film resistor.
Patent TW-577857-B (TW)
Title: A method for growing a barium titanate layer
Inventor: LEE MING-KWEI
IPC: H01L21/316
Filed: 1999-07-14
Granted: 2004-03-01
Abstract: This invention discloses a method for growing a barium titanate layer by means of liquid phase deposition (LPD), which characterizes by low cost, low-temperature growth, and easily practice. This novel method for growing a barium titanate is characterized by mixing a barium nitrate solution and hexaf1uorotitanic acid solution to produce a barium titanate solution. Next, a boric acid solution is added to the barium titanate solution to prepare a barium titanate growth solution. Then a substrate, such as a wafer, ready to grow a barium titanate layer thereon is dipped in this growth solution for a period of time at a suitable temperature. Thereafter, a barium titanate dielectric layer with the properties of high dielectric constant, low leakage current and breakdown resistant can be formed on the substrate.
Patent TW-468340-B (TW)
Title: TV phone device with security function
Inventor: KOBAYASHI HIDEAKI
IPC: H04N21/442
Filed: 1999-10-14
Granted: 2001-12-11
Abstract: The present invention is a TV phone device with security function which can be used to provide an anti-theft system with two-way monitoring and can be used as a TV phone, and which is capable of accepting the absent people condition at the auto-dial site to re-dial the telephone sequentially. The solution is to provide at least two monitoring devices, each consisting of the CCD camera (3), the microphone (5), the upper portion (2) of the sensor (4) and the body (1). The body (1) can be connected with the display (6) for use as the TV phone for communication with each other by images. Furthermore, when the sensor detects an abnormal state, it can automatically dial out and transmit the image and voice to other monitoring device via telephone line (7a).
Patent TW-434832-B (TW)
Title: Processing method for deep submicron CMOSFET
Inventor: WU SHIE-LIN
IPC: H01L21/8238
Filed: 1999-11-04
Granted: 2001-05-16
Abstract: The present invention discloses a processing method for deep sub-micron CMOSFET which includes the following steps: firstly, forming a gate oxide on the semiconductor substrate; next, depositing a first semiconductor silicon layer on the gate oxide; then, depositing a second semiconductor silicon layer on the first semiconductor silicon layer and simultaneously doping with N-type dopant therein; and, depositing a third semiconductor silicon layer on the second semiconductor silicon layer; patterning the stacked semiconductor silicon layer to form the gate structure; conducting ion implantation process to form the lightly doped source/drain area; and finally, conducting heat treatment to form the shallow junction of the drain/source area to complete the production of the CMOS transistors, wherein the N-type dopant previously doped into the second semiconductor silicon layer is subject to the high temperature and diffused into the junctions of the stacked semiconductor silicon layers to form the diffusion barrier layer for preventing the boron ions from occurrence of penetration effect.
Patent TW-407179-B (TW)
Title: Beam
Inventor: PLATT WILLIAM J
IPC: E04B9/06
Filed: 1999-11-05
Granted: 2000-10-01
Abstract: A beam for grid in a suspended ceiling that has an increased effective beam height over prior art beams. The beam has a peak at the top, which conforms to the shape of a standard light fixture box frame supported by the beam in the ceiling. The beam does not interfere with the proper support of the fixture frame on the beam flanges.
Patent TW-460902-B (TW)
Title: Method for forming electromigration-resistant structures by doping
Inventor: ANDRICACOS PANAYOTIS CONSTANTI
IPC: H01L21/265
Filed: 1999-11-30
Granted: 2001-10-21
Abstract: A method for forming a copper conductor in an electronic structure by first depositing a copper composition in a receptacle formed in the electronic structure, and then adding impurities into the copper composition such that its electromigration resistance is improved is disclosed. In the method, the copper composition can be deposited by a variety of techniques such as electroplating, physical vapor deposition and chemical vapor deposition. The impurities which can be implanted include those of C, O, Cl, S and N at a suitable concentration range between about 0.01 ppm by weight and about 1000 ppm by weight. The impurities can be added by three different methods. In the first method, a copper seed layer is first deposited into a receptacle and an ion implantation process is carried out on the seed layer, which is followed by electroplating copper into the receptacle. In the second method, a copper seed layer is first deposited into a receptacle, a copper composition containing impurities is then electrodeposited into the receptacle and the electronic structure is annealed so that impurities diffuse into the copper seed layer. In the third method, a barrier layer is first deposited into a receptacle, dopant ions are then implanted into the barrier layer with a copper seed layer subsequently deposited on top of the barrier layer. An annealing process for the electronic structure is then carried out such that dopant ions diffuse into the copper seed layer. The present invention method may further include the step of ion-implanting at least one element into a surface layer of the copper conductor after the conductor is first planarized. The surface layer may have a thickness between about 30 and about 500. The at least one element may be selected from Co, Al, Sn, In, Ti and Cr.
Patent TW-473773-B (TW)
Title: Loading/unloading control apparatus of semiconductor device and control method thereof
Inventor: SOUNG JAE-MYUNG
IPC: H01L21/677
Filed: 1999-12-22
Granted: 2002-01-21
Abstract: The present invention relates to a load/unload control apparatus and methods of a semiconductor device to reduce the load/unload time of the semiconductor device after fabrication and testing of the semiconductor device. The characteristic steps include confirming whether a classified semiconductor device is in the unloading buffer or not by a microprocessor, confirming whether the classified plate is prepared or not if there is a classified semiconductor device in the unloading buffer confirmed by the microprocessor, replacing the classified plate of the classified semiconductor device by the microprocessor if the mentioned classified plate is not prepared, and delivering the semiconductor device in the buffer to the classified buffer by X-Y selecting machine with the mentioned replacing classified plate.
Patent TW-I224605-B (TW)
Title: Foamed thermoplastic polyurethanes and process for preparation thereof
Inventor: LIMERKENS DOMINICUS
IPC: C08G18/76
Filed: 2000-01-10
Granted: 2004-12-01
Abstract: Process for the preparation of foamed thermoplastic polyurethanes characterised in that the foaming of the thermoplastic polyurethane is carried out in the presence of thermally expandable microspheres.
Patent TW-438985-B (TW)
Title: Assembly comprising an optical element and a mount
Inventor: TRUNZ MICHAEL
IPC: G02B7/02
Filed: 2000-02-10
Granted: 2001-06-07
Abstract: An assembly is provided with a mount (1) and an optical element (7). The optical element (7) is connected via elastic connecting elements directly or via one or more intermediate elements to the mount (1). The connecting elements have at least one membrane-like joining element (4), which is connected in the outer region to the mount (1) or to the intermediate element and in the inner region is connected via a rigid, moment-transferring connection (12) to the optical element (7).
Patent TW-460398-B (TW)
Title: Control unit for checking the integrity of tear-off closing devices applied to respective openings in strip packaging material for producing aseptic sealed packages of pourable food products
Inventor: SIGHINOLFI EUGENIO
IPC: B31B1/74
Filed: 2000-03-28
Granted: 2001-10-21
Abstract: A control unit (1) interacting with a strip packaging material to which are applied, to close respective openings (3) in the packaging material, a number of patch elements (5) and a number of tear-off tongues (6) heat sealed to respective patch elements (5). To determine the integrity of the patch elements (5), the unit has at least one contact surface (21) at an operating electric potential (Va) and cooperating with the side of the packaging material (4) having the patch elements (5) to define one plate of a capacitor (23), the other plate of which is defined by an aluminium film (4a) of the packaging material (4), and the dielectric of which is defined by the heat-seal plastic material interposed between the plates; and a detecting circuit (26) connected to the contact surface (21) and to the aluminium film (4a) to detect an electric quantity related to variations in the dielectric strength of the dielectric of the capacitor (23) and so determine the presence of any microholes in the patch elements (5).
Patent TW-513496-B (TW)
Title: Weaving mechanism of the Jacquard type and weaving loom equipped with such a mechanism
Inventor: BRAUN DOMINIQUE
IPC: D03C3/26
Filed: 2000-05-15
Granted: 2002-12-11
Abstract: This invention relates to a weaving mechanism of the Jacquard type for forming the shed in a weaving loom, said mechanism being associated with a harness comprising harness cords fast with heddles associated with the warp yarns of the loom, characterized in that said harness cords are controlled by electric actuators arranged in rows and/or in columns forming two panels arranged above the loom and in that a unit for supplying and monitoring said actuators is housed in a compartment defined between said panels.
Patent TW-561293-B (TW)
Title: Bistable LCD driving method
Inventor: HUANG JIUN-MING
IPC: G02F1/13
Filed: 2000-09-01
Granted: 2003-11-11
Abstract: In consideration of saving electrical power, the present invention utilizes the bistable feature of cholesterol LCD (liquid crystal display) to achieve the purpose of suitably adjusting the voltage of the structure status for each stage (including homeotropic texture, planar texture and focal conic texture, so that the liquid crystal without being supplied with power still remains in the original stable status, so as to reduce the required power supply. When the cholesterol liquid crystal is in the above three main structure statuses, the screen exhibits different colors. The LCD display panel (having cholesterol or chiral liquid crystal) is applied with a suitable voltage at the initial display time to arrange the liquid crystal molecules in homeotropic texture. The voltage is suddenly dropped to a certain level to make the liquid crystal present a stable status of planar texture. Then, a lower voltage is added to make the liquid crystal remain in the stable status of planar texture, or a higher voltage is added to make the liquid crystal transform to the stable status of the focal conic texture. Finally, a development voltage is added, so that the stable status of liquid crystal structure, whether the liquid crystal continues to remain in the stable status of planar texture or changes the stable status of focal conic texture, can be developed more completely. The liquid crystal without being supplied with power still can be in the original stable status, and thus the required power supply is reduced.
Patent TW-479256-B (TW)
Title: Recording medium, recording apparatus and recording method
Inventor: NAITO KATSUYUKI
IPC: G11B7/24035
Filed: 2000-09-18
Granted: 2002-03-11
Abstract: The present invention provides a recording medium having a plurality of charge accumulating regions each containing a first material capable of accumulating an electric charge and a photoconductive region containing a second material whose conductivity is increased by light absorption, a recording apparatus including such a recording medium, and method recording information on such a recording medium. In the present invention, information is recorded on the recording medium by irradiating the photoconductive region with light and by injecting an electric charge into the charge accumulating region via that portion of the photoconductive region which is irradiated with light.