Patent SG-11201408285Q-A (SG)
Title: TEMPERATURE CONTROL FOR GaN BASED MATERIALS
Inventor: GURARY ALEXANDER I
IPC: H01L21/02
Filed: 2013-06-21
Abstract: (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 3 January 2014 (03.01.2014) WIPOIPCT (10) International Publication Number WO 2014/004285 A1 (51) International Patent Classification: H01L 21/66 (2006.01) H01L 21/02 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/US2013/047010 21 June 2013 (21.06.2013) English English (30) Priority Data: 61/664,374 13/801,357 26 June 2012 (26.06.2012) US 13 March 2013 (13.03.2013) US (71) Applicant: VEECO INSTRUMENTS INC. [US/US]; Terminal Drive, Plainview, NY 11803 (US). (72) Inventors: GURARY, Alexander I.; 1068 Tullo Farm Road, Bridgewater, NJ 08807 (US). BELOUSOV, Mikhail; 16 Gulick Lane, Plainsboro, NJ 08536 (US). TAS, Guray; 91 Crenshaw Drive, Flanders, NJ 07836 (US). (74) Agents: KARLIN, Joseph et al.; Lerner, David, Litten- berg, Krumholz & Mentlik, LLP, 600 South Avenue West, Westfield, New Jersey 07090 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(H)) [Continued on next page] (54) Title: TEMPERATURE CONTROL FOR GaN BASED MATERIALS FIG. 1 1 1L 2L 3! 4L 5L 6L 7L! 1 I / 1 7R 6R 5R 4R 3R 2R 1R 1 2G oo CJ •t o o (57) Abstract: A method of in situ temperature meas­ urement for a wafer treatment reactor such as chem­ a ical vapor deposition reactor 10 desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer sup­ port element 40 within the reactor about a rotational axis 42. The method desirably further includes, while the wafer support element 40 is rotating about the rota­ tional axis 42, obtaining first operating temperature measurements using a first operating pyrometer 71 that receives radiation from a first portion of the wafer sup­ port element, and obtaining first wafer temperature measurements using a wafer temperature measurement device 80 that receives radiation from at least one wafer 46, the wafer temperature measurement device located at a first position A. O CJ o & WO 2014/004285 A11lllllllllllll IIllllllIIIlllll IIIllllIII IIIllllllllllllllllllll lllll lllllllllllllll llllllll — as to the applicant's entitlement to claim the priority of Published. the earlier application (Rule 4.17(iii)) — with international search report (Art. 21(3))