Patent FR-2972731-A1 (FR)
Title: Forming indium gallium nitride comprises providing a layer of gallium nitride within a chamber, and epitaxially growing a layer of indium gallium nitride on a surface of the layer of gallium nitride
Inventor: FIGUET CHRISTOPHE
IPC: C30B25/02
Filed: 2011-03-14
Abstract: Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN. Forming indium gallium nitride (InGaN) comprises providing a layer of gallium nitride (GaN) within a chamber; epitaxially growing a layer of InGaN on a surface of the layer of GaN, comprising providing a precursor gas mixture within the chamber; selecting the precursor gas mixture to comprise one or more Group III precursors and a nitrogen precursor; formulating the precursor gas mixture to cause a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the one or more Group III precursors within the chamber to be at least about 5600; and decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor proximate the surface of the layer of GaN; and growing the layer of InGaN to an average final thickness greater than about one hundred nanometers (100 nm) and less than a critical thickness of the layer of InGaN. An independent claim is a semiconductor structure comprising a ternary III-nitride material comprising nitrogen, gallium, and at least one of indium and aluminum, the ternary III-nitride material formed by a method comprising providing a substrate comprising a binary III-nitride material within a chamber; and epitaxially growing a layer of ternary III-nitride material on the binary III-nitride material, comprising providing a precursor gas mixture within the chamber, the precursor gas mixture comprising a nitrogen precursor and two or more Group III precursors; formulating the precursor gas mixture such that a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the two or more Group III precursors within the chamber is at least about 5600; and decomposing the nitrogen precursor and the two or more Group III precursors in the chamber; where the fully-grown layer of ternary III-nitride material has an average final thickness greater than about one hundred nanometers (100 nm) and less than a critical thickness of the layer of InGaN; where a relaxed lattice parameter mismatch between the fully-grown layer of ternary III-nitride material and the binary III-nitride material is at least about 0.5% of the relaxed average lattice parameter of the binary III-nitride material; and where the fully-grown layer of ternary III-nitride material comprises V-pits having an average pit width of about two hundred nanometers (200 nm) or less.