baber/WOPTO huggingface dataset:
Patent TW-359856-B (TW)
Title: Active matrix display device and its manufacture
Inventor: YAMAZAKI SHUNPEI
IPC: H01L21/20
Filed: 1997-11-26
Granted: 1999-06-01
Abstract: In this monolithic type active matrix display device using the TFT formed on a substrate having an insulated surface, when a shift register circuit constituting the data driver circuit 1 is defined as p series, the number of video terminals inputted to the data driver circuit 1 are q and the number of pixel electrodes 8 driven by the data driver circuit 1 are R, R/pq is 50,000 to 3,000,000. Then, the activated layer of the TFT constituting the data driver circuit 1 is constituted with the silicon film crystallized by the heat treatment under the presence of the catalytic element for accelerating the crystallization. As the substrate having the insulated surface, a glass substrate, a quartz substrate, etc., are exemplified.
Patent TW-370626-B (TW)
Title: Method for manufacturing lens
Inventor: OSAWA FUTOSHI
IPC: G03B21/60
Filed: 1997-11-27
Granted: 1999-09-21
Abstract: The present invention relates to a method for manufacturing lens such as spherical Pheneil lens. The invention provides a method of manufacturing lens, which is safe, capable of reducing equipment cost, and contains no bubbles in lens part of embodiment products, and capable of raising productivity and reducing cost by continuous production with shaping molds. The method for manufacturing lens of the present invention includes the process of coating resin compositions for lens with plural multi-connected nozzles alternately equipped along said shaping molds in a direction somewhat perpendicular to the coating direction of resin compositions for lens; and the characteristics constructed by a process of laminating substrate components on resin compositions for lens coated on said shaping molds.
Patent TW-419733-B (TW)
Title: Coating apparatus and coating method
Inventor: OKUMURA KATSUYA
IPC: H01L21/00
Filed: 1998-01-26
Granted: 2001-01-21
Abstract: Disclosed is a coating apparatus, comprising: a spin chuck 52 for holding a substrate; photoresist solution tanks 71, 711 to 71n which contain a primary photoresist solution; a solvent tank 72a, 72b which contains the first and second solvent; a first stream-combining valve 75a, 751 communicating with each of a first solvent tank and a photoresist solution tank; a first pump 73, 731 to 73n for supplying an primary photoresist solution from the photoresist solution tank toward said first stream-combining valve; a second pump 74a for supplying a solvent from said first solvent supply toward said first stream-combining valve; a first mixer 76a for mixing and stirring the initial resist solution flowing out of said first stream-combining valve with a solvent; a second stream-combining valve 75b arranged downstream of said first mixer and communicating with each of the first mixer and said second solvent supply; a third pump 74b for supplying the solvent from said second solvent supply toward the second stream-combining valve; a second mixer 76b for mixing and stirring said primary mixed liquid material coming out of said second stream-combining valve with a solvent so as to prepare a final mixed liquid material; a nozzle 86 equipped with a liquid injection port for injection said final mixed liquid material prepared in said second mixer toward the substrate; and a controller 131 for controlling each of the first, second, third pumps and the first and second stream-combining valves so as to control the mixing ratio of the initial photoresist solution to the solvent and to control the mixing ratio of the primary mixed liquid material to the solvent.
Patent TW-349046-B (TW)
Title: Wrench with ratcheting action
Inventor: CHACONAS PETER C
IPC: B25B13/46
Filed: 1998-03-21
Granted: 1999-01-01
Abstract: A wrench comprising a handle and an integral head, the head having a top surface, a bottom surface and a chamber formed therein, the chamber having a wall thereabout, at least one tooth being formed on the wall of the chamber and projecting into the chamber, a cylindrical rotor disposed in the chamber, the rotor having a plurality of spaced-apart teeth formed axially on a circumference thereof, the rotor having means thereon to engage a workpiece, in which the at least one tooth on the wall of chamber has a first surface having a height and a second opposite surface having a height less than the first surface, the first surface of the at least one tooth on the wall of the chamber engaging one of the teeth on the rotor, the chamber in the head having a cross-sectional area and the rotor having a smaller cross-sectional area, in which the rotor is translatably and eccentrically moveable within the chamber in the head, such that movement of the handle in a first direction engages the at least one tooth on the wall of the chamber with one of the teeth on the rotor, and transmits torque to the rotor and the means to engage the workpiece, and movement of the handle in a second opposite direction disengages the teeth and moves the rotor from the engagement with the at least one tooth on the chamber wall.
Patent TW-419809-B (TW)
Title: Non-volatile semiconductor memory
Inventor: IWAHASHI HIROSHI
IPC: H01L29/788
Filed: 1998-05-02
Granted: 2001-01-21
Abstract: The purpose of this invention is to cancel the conventional offset transistor of the virtual ground EEPROM to shrink the area. The solution is to build a program mechanism that is used to program data on the memory element. When the memory units of the same column is already programmed, the program mechanism will shift to program the memory units of the next column. The sequence of the program control is from one-side memory units toward another side memory units.
Patent TW-482830-B (TW)
Title: Device and method for clamping single crystals
Inventor: KUROSAKA SHOEI
IPC: C30B15/32
Filed: 1998-05-14
Granted: 2002-04-11
Abstract: In the process of clamping heavy single crystals, the device and the method of this invention are capable of clamping a portion with good duplication in its shape and size. This can offset the declining of the clamping force induced by the shrinkage of single crystals during cooling process. The single-crystal clamping device according to this invention includes: a single-crystal lifting wire for lifting the seed crystal dipped into the melted liquid; means for winding up the single-crystal lifting wire; a polygon-link body consisted of multiple pin-connected links, capable of deforming in a horizontal plan by altering the positions of link pins; means for deforming the polygon-link body so as to urge the polygon-link body to clamp the portion near the end of the single crystal being lifted and accommodated within the polygon-link body; and means for synchronizing the rotation and the ascending/descending movements of the polygon-link body with the winding-up and the rotation movements of the single-crystal lifting wire.
Patent TW-382097-B (TW)
Title: Digital detector employing slope detection method
Inventor: LIOU SHU-MING
IPC: G06F3/0354
Filed: 1998-05-18
Granted: 2000-02-11
Abstract: A kind of digital detector employing slop detection method which includes light source, light detector, optical grating and slope detecting circuit. The light detector receives lights from the light source and the optical grating is located between the light source and the light detector. When the optical grating moves, the light received by light detector will vary between the brightest to the darkest and the strength of output signal will also vary according to the light intensity received. The output of light detector sent to slope detecting circuit will be converted into digital output signal according to the slope variation of output signal of the light detector. The digital detector employing slope detection method is not easily influenced by the characteristic variation of light detector and ambient lights and also needless to adjust threshold voltage of circuit according to different characteristics of light detector so that calibration works can be reduced. Its simple circuit structure can save the production cost.
Patent TW-382101-B (TW)
Title: Electronic camera having picture data output
Inventor: ARAI TATSUO
IPC: H04N1/00
Filed: 1998-06-30
Granted: 2000-02-11
Abstract: A digital camera stores captured picture data and E-mail address data inputted from a key entry unit in a flash memory so that they are associated with each other and then transfers the picture data and the E-mail address data to a personal computer via an I/O port or an infrared communication unit. The personal computer receives the picture data and the E-mail address data transferred from the digital camera via an I/O port or an infrared communication unit. The received picture data is then transmitted to a destination terminal on a computer network on the basis of the received E-mail address data.
Patent TW-412901-B (TW)
Title: Method and apparatus for generating a signal and a multi-carrier modulated signal having a frame structure and method and apparatus for frame synchronization of a signal and a multi-carrier modulated signal having a frame structure
Inventor: EBERLEIN ERNST
IPC: H04J11/00
Filed: 1998-08-05
Granted: 2000-11-21
Abstract: A method for generating a signal having a frame structure, each frame of the frame structure comprising at least one useful symbol (12), a guard interval (14) associated to the at least one useful symbol (12) and a reference symbol (16), comprises the step of performing an amplitude modulation of a bit sequence such that the envelope of the amplitude modulated bit sequence defines a reference pattern of the reference symbol (16). A method for frame synchronization of a signal having such a frame structure comprises the steps of receiving the signal, down-converting the received signal, performing (164) an amplitude-demodulation of the down-converted signal in order to generate an envelope, correlating (166) the envelope with a predetermined reference pattern in order to detect a signal reference pattern of the reference symbol (16) in the signal, and performing the frame synchronization based on the detection of the signal reference pattern.
Patent TW-400610-B (TW)
Title: The manufacturing method of the Shallow Trench Isolation (STI)
Inventor: HUNG YUN-DING
IPC: H01L21/76
Filed: 1998-08-21
Granted: 2000-08-01
Abstract: It is the manufacturing method of the Shallow Trench Isolation (STI) involving the formation of the pad oxide on the substrate and that of the mask layer on the pad oxide. Next, identify the mask layer and the pad oxide. After forming the trench on the substrate, it continues to form a liner oxide layer on the naked surface of the substrate. Then, forming a buffer layer on the trench surface meanwhile covering the liner oxide to form an insulative layer in the trench. Finally, remove the partial buffer layer, the mask layer, and the pad oxide to produce the Shallow Trench Isolation (STI).
Patent TW-374799-B (TW)
Title: Method of controlling refinery of fast-cutting stainless steel with sulfur containing VOD
Inventor: WEI YU-SHENG
IPC: C21C7/00
Filed: 1998-09-08
Granted: 1999-11-21
Abstract: Method of controlling refinery of fast-cutting stainless steel with sulfur containing VOD, including at least the following steps: (1) process of refinery and decarburization, mainly the decarburization by blowing oxygen in vacuum to fluid steel, with generation inevitably, in the decarburization process, oxidization of Cr, Mn and other metal elements; (2) reduction the process of dregs creating and sulfur iron adding, being the recycling of the Cr, Mn metal elements for precise composition range, by adding in the fluid steel FeSi, Cao, MgO and other components for reduction and generation of dregs; further, for desired content of sulfur, after reduction of creation of dregs, adding in sulfur iron or sulfur line, for the desired composition range of sulfur; (3) micro adjustment of the process; (4) output of steel; featuring the adding in the fluid steel in the micro adjustment process 0.001 wt% to 0.01 wt% of CaO and 0.001 wt% to 0.005 wt% MgO, for upgrading the assertion of sulfur in the manufacture process of fast-cutting stainless steel and the total sulfur recycling rate to over 85%.
Patent TW-396423-B (TW)
Title: Method for manufacturing semiconductor device
Inventor: YAMAGUCHI HIROMU
IPC: H01L27/04
Filed: 1998-09-16
Granted: 2000-07-01
Abstract: The present invention relates a method for manufacturing semiconductor device. After a conductor layer is deposited on insulator layer, chemical mechanical polishing method, etching back, or other planarization method is used to planarize the surface of conductor layer. Then, a pre-patterned mask on the conductor layer surface is formed while the mask can be spun-coated SOG or silicon dioxide deposited by chemical vapor deposit method. Finally, mask is made for etching mask in order to etch conductor layer with dry etching method. A pre-patterned metal layer or electrode of capacitor in semiconductor structure, which could accelerate the fine process of columnar crystal structure, is obtained. Additionally, the electrode profile of capacitor can be improved to fabricate a capacitor with high reliability.
Patent TW-415871-B (TW)
Title: Chemical-mechanical polishing pad
Inventor: LIN JIN-KUEN
IPC: H01L21/304
Filed: 1998-10-21
Granted: 2000-12-21
Abstract: The invention provides a chemical-mechanical polishing pad, which includes a plurality of annular grooves and a plurality of streamline grooves designed according to principles of the hydrodynamics. The streamline grooves are designed according to flow equations derived from source flow and vortex flow such that the slurry can flow uniformly on the polishing pad. An angle and a depth of the streamline groove, which are calculated by using the boundary layer effect of the streamline groove function, are used to design an optimum structure for polishing pad.
Patent TW-404049-B (TW)
Title: CMOS semiconductor device and method of fabricating the same
Inventor: ITO HIROSHI
IPC: H01L21/28
Filed: 1998-10-30
Granted: 2000-09-01
Abstract: There is provided a method of fabricating a CMOS semiconductor device including nMOSFET and pMOSFET, including the steps of (a) forming a gate insulating film on a semiconductor substrate, (b) forming a first polysilicon film on the gate insulating film, (c) forming an interlayer insulating film on the first polysilicon film, (d) forming a second polysilicon film on the interlayer insulating film, (e) shaping the first polysilicon film, the interlayer insulating film, and the second polysilicon film into a gate electrode in both a first region where the nMOSFET is to be fabricated and a second region where the pMOSFET is to be fabricated, and (f) doping n-type impurities into the first region and p-type impurities into the second region by ion-implantation. The method makes it possible to prevent reductrion in dielectric voltage of a gate insulating film, which would be caused by diffusion of titanium atoms, without causing a gate electrode to be depleted.
Patent TW-403866-B (TW)
Title: A system performance switching device applied on portable electronics
Inventor: CHANG FREDERICK
IPC: G06F1/20
Filed: 1998-11-17
Granted: 2000-09-01
Abstract: The system is designed to achieve the main purpose of quick-response effect for system heat dissipation by increasing the testing flow. Furthermore,we could promote the heat dissipation efficiency by installing an outer connectable heat dissipation device.In addition,we could also prevent temperature surge beforehand from improper heat dissipation by adjusting the pre-set value (K).
Patent TW-384318-B (TW)
Title: Process for producing sodium persulfate
Inventor: KIMIZUKA KENICHI
IPC: C25B1/28
Filed: 1998-12-19
Granted: 2000-03-11
Abstract: There is disclosed a process for producing sodium persulfate which comprises the step (1) of electrolyzing, at an anode, a solution containing ammonium sulfate and the step (2) of producing sodium persulfate form the resultant liquid produced at the anode and sodium hydroxide and, as desired, teh step of removing so dium sulfate, and further as desired, the step (3) of crystallizing the reaction liquid as produced in the step (2). According to the above process, it is made possible to efficiently produce sodium persulfate having a markedly high purity substantially free from nitrogen components at a high yield at a high current efficiency in electrolysis.
Patent TW-426833-B (TW)
Title: PCI system and adapter requirements following reset
Inventor: KELLEY RICHARD ALLEN
IPC: G06F9/445
Filed: 1999-02-08
Granted: 2001-03-21
Abstract: A method of registering a newly added peripheral device with a computer system by responding with a status message from the device to a bus of the computer system, in response to an access attempt, and within a predetermined time period from the deasserting of the reset signal applied to device, so as to avoid stalling and thereby avoid the need to reboot the system in order to initialize the new peripheral device with the operating system. The device may be allowed to initially send a retry response, provided the response occurs during an initial latency period which is less than the predetermined time period. The invention also enables the peripheral device to respond to non-configuration cycles immediately following configuration completion. Internal logic of the peripheral device can be initialized after responding with the status message. Non-configuration access to the peripheral device can be prevented until it is ready to respond, by setting a bit (in the configuration space of the peripheral device) to indicate that the peripheral device is ready.
Patent TW-413906-B (TW)
Title: Method for monitoring capacitance
Inventor: HUANG KUO-CHING
IPC: H01L21/8242
Filed: 1999-02-12
Granted: 2000-12-01
Abstract: The present invention discloses a method for monitoring capacitance, in which a novel method for monitoring the capacitance is provided. The method is characterized in using a microbalance to measure the net weight of a hemi-spherical grain polysilicon semiconductor substrate. Subsequently, spin-on liquid is applied to the semiconductor substrate in such a manner that a fixed amount of spin-on liquid is spun at a constant speed and in a predetermined time so that the spin-on liquid is fully filled in the bottom electrode plate. After baking, the spin-on liquid on the hemi-spherical grain polysilicon semiconductor substrate is cured. Then, the microbalance is used to compare the weights of the substrate with cured spin-on liquid and without cured spin-on liquid. When the cured spin-on liquid is remaining on the substrate, the surface of the hemi-spherical grain polysilicon semiconductor substrate is coarser. Consequently, the capacitance per unit area is larger, and thus it is able to accurately verify the improvement in any manufacturing process.
Patent TW-426512-B (TW)
Title: Osteosynthetic implant with flat universal joint connection
Inventor: FRIGG ROBERT
IPC: A61F2/44
Filed: 1999-04-08
Granted: 2001-03-21
Abstract: An implant device contains osteosynthetic implant or an implant device and a joint connection part. The joint connection part contains a flat or ring rotation part with two bars. The conjunction method is the osteosynthetic implant in the axial center of the rotation part.
Patent TW-424147-B (TW)
Title: Socket used for checking electric component
Inventor: KAJIWARA YASUSHI
IPC: G01R31/00
Filed: 1999-04-08
Granted: 2001-03-01
Abstract: The purpose of this invention is to provide a kind of socket that can be use to check electric component efficiently. The invention includes the followings: the support; the contact constitution device 34; the fixing constitution device 28 of the elastic support body 35 on the backside of the contact constitution device 34; the push/press body 41, which is used to push and press the backside of the electric component 1 stated above such that the push/press body 41 can contact with the elastic support body 35; the contact composition 25, which is formed by moving the movable constituent device 40 about the fixing constituent device 28; and the fixing plate 11, in which the corresponding individually movable constituent device of the plural contact composition 25 is installed oppositely and in the contactless state. The electrode portion 4, which is located in between the contact constitution device 34 and the push/press body 41 in normal case, can be inserted with the electric component 1 stated above such that the push/press body 41 is located on the retreat position, which is the position for the contact constituent device 34 to maintain at the open state of leaving. The push/press body 41 is made to locate and maintain at the electrode portion 4 of the electric component 1 stated above during checking period. The moving mechanism 60 of the movable constitution device is located on the position of the contact state, in which the regulated contact pressure is used to make the contact-terminal of the constituent device 34 start the contact process.
Patent TW-434569-B (TW)
Title: Semiconductor integrated circuit
Inventor: YANAGISAWA MAKOTO
IPC: G11C8/18
Filed: 1999-04-23
Granted: 2001-05-16
Abstract: A semiconductor integrated circuit includes a plurality of circuits operating in parallel in accordance with a timing signal and having an enabled state and a disabled state, a control circuit setting each of the plurality of circuits to the enable state or the disabled state in accordance with an operation mode, and a timing adjustment circuit which adjusts the timing signal in accordance with a number of circuits which are in the enabled state.
Patent TW-418427-B (TW)
Title: Gas blow-out structure for floatation carrying device and blow-out hole forming method
Inventor: TSUJIMURA MASAYUKI
IPC: H01L21/677
Filed: 1999-08-30
Granted: 2001-01-11
Abstract: The object of the invention is to provide a gas blow-out structure for a floatation carrying device and a blow-out hole forming method, which enable a blow-out hole to be simply provided for a carrying board to be used as a base pedestal for a moving unit and a control unit. To achieve the object, in a gas blow-out structure for a floatation carrying device equipped with a carrying board letting a tabular substrate come up to the surface by means of gas blow-out from a carrying surface 21, and a feeding system provided on the tabular substrate and feeding gas blown out from the carrying surface 21, the structure is provided with a receiving hole 1 capable of being bored in the carrying surface 21 at a position through which gas is blown out, and of being fed with gas from a gas supply system, and an engaging body in a shape capable of being fitted in the receiving hole 1, wherein the engaging body is inserted into the receiving hole 1, and is provided with a blow-out hole, out of which gas fed to the receiving hole 1, is blown out.
Patent TW-557426-B (TW)
Title: Interface device for simulating mainboard of notebook computer
Inventor: YU HUNG-WU
IPC: G06F13/00
Filed: 1999-10-14
Granted: 2003-10-11
Abstract: The present invention is an interface device for simulating notebook computer mainboard. It is used for simulating environment of a notebook computer mainboard on a desktop computer mainboard and consists of an interface slot and an interface card. The interface slot is to be installed on a desktop computer mainboard. After combining the interface card with the interface slot and by cooperating with a desktop computer, the interface device can be used for simulating environment of notebook computer mainboard.