baber/WOPTO huggingface dataset:
Patent TW-408297-B (TW)
Title: Image synchronous automatic detection and adjustment technique
Inventor: LI TIAN-GUEI
IPC: G09G5/00
Filed: 1998-11-06
Granted: 2000-10-11
Abstract: The case is a process about the display of image signals. Said process mainly adjusts the timing of the active part of image signals according to a series of synchronous pulses for the image signals always displayed normally in the display area. Said process detects continuously whether the trailing end of the active part of image signals lags the next synchronous pulse, and adjusts the leading end of the active part of said image signals properly and immediately according to the detection result.
Patent TW-I230155-B (TW)
Title: Substituted imidazolidine derivatives, their preparation, their use and pharmaceutical preparations comprising them
Inventor: WEHNER VOLKMAR
IPC: A61K38/07
Filed: 1998-12-04
Granted: 2005-04-01
Abstract: The present invention relates to substituted imidazolidine derivatives of the formula I, in which B, E, W, Y, R, R2, R3, R30, e and h have the meanings indicated in the claims. The compounds of the formula I are valuable pharmaceutical active compounds, which are suitable, for example, for the therapy and prophylaxis of inflammatory disorders, for example of rheumatoid arthritis, or of allergic disorders. The compounds of the formula I are inhibitors of the adhesion and migration of leucocytes and/or antagonists of the adhesion receptor VLA-4 belonging to the integrins group. They are generally suitable for the therapy or prophylaxis of illnesses which are caused by an undesired extent of leucocyte adhesion and/or leucocyte migration or are associated therewith, or in which cell-cell or cell-matrix interactions which are based on interactions of VLA-4 receptors with their ligands play a part. The invention furthermore relates to processes for the preparation of the compounds of the formula I, their use, in particular as pharmaceutical active compounds, and pharmaceutical preparations which contain compounds of the formula I.
Patent TW-426823-B (TW)
Title: Content addressable memory FIFO with and without purging
Inventor: PEDICONE JOHN T
IPC: G11C7/00
Filed: 1999-03-19
Granted: 2001-03-21
Abstract: A content-addressable, first-in/first-out memory (CAM-FIFO), as used to provide a read-modify-write buffer for data between two process, includes: a Content Addressable Memory (CAM) which stores flag data; a FIFO memory portion for providing data storage; a write/read address counting section for providing write/read addresses of data to be stored in/read from the FIFO; and logic to determine and is used to query data on the queue to determine if the FIFO data should still be sent to the receiving process, or replaced with at least part of the flag data.
Patent TW-422825-B (TW)
Title: Graphite-containing monolithic refractory material
Inventor: IIDA MASAKAZU
IPC: C04B35/66
Filed: 1998-12-23
Granted: 2001-02-21
Abstract: A graphite-containing monolithic refractory material comprises at least one component selected from alumina and alumina-magnesia spinel, which are divided into selected particle size regions, artificial graphite having a selected average particle size, and pitch powder. The refractory material may optionally comprise a selected amount of silicon carbide having a selected average particle size. The graphite-containing monolithic refractory material exhibits excellent casting workability at a low moisture content, and both excellent corrosion resistance and spalling resistance. The refractory material is suitable as a casting monolithic refractory material for lining a topedo ladle car.
Patent TW-434535-B (TW)
Title: Semiconductor memory device
Inventor: HORI MINEYUKI
IPC: G11C7/22
Filed: 1999-02-01
Granted: 2001-05-16
Abstract: An approach to rapidly pre-charging bit lines (104a and 104b) after a write operation to a memory cell (128) is disclosed. Following a write operation, a Y-select signal (Yj) and its inverse (/Yj) are maintained in an active state for a given period of time, keeping the transistors within a column selecting circuit (102) turned on. Pre-charging circuits (106 and 108) are also turned on. Consequently, the bit lines (104a and 104b) are pre-charged by the bit line pre-charging circuit (106), and by the pre-charging circuit (108) by way of a read bus (124) and the column selecting circuit (102). Furthermore, a write amplifier (112) is also activated, resulting in the bit lines (104a and 104b) being further pre-charged by way of a write bus (126) and the column selecting circuit (102).
Patent TW-442614-B (TW)
Title: Exhaust gas purifier
Inventor: OTAKA TOSHIHIRO
IPC: F01N3/24
Filed: 1999-03-04
Granted: 2001-06-23
Abstract: The present invention provides a technique to expose an exhaust gas to a catalyst of a heat pipe for a long time for better purification of the exhaust gas. A heat pipe 11 is formed with a punching pressed metal that holds a catalyst. The heat pipe also has guide wings 12, 14 in an inlet side 11a which make the exhaust gas whirl along the inner periphery of the heat pipe, and the heat pipe 11is housed in a muffler 1. The effect of the present invention allows the exhaust gas to swirl along the inner periphery of the heat pipe.
Patent TW-585740-B (TW)
Title: Fungicidal mixtures based on tris(oxime ether) derivatives and further fungicides
Inventor: SCHELBERGER KLAUS
IPC: A01N53/12
Filed: 1999-03-24
Granted: 2004-05-01
Abstract: Fungicidal mixtures, comprising as active components (a) phenylacetic acid derivatives of the formula I, in which the substituents and the index are each as defined in the description, and salts thereof, and (b) at least one compound of the formulae II to V, where the substituents are each as defined in the description, in a synergistically effective amount.
Patent TW-581793-B (TW)
Title: Coating solution for low dielectric constant silica film forming and substrate with the low dielectric constant film
Inventor: KOMATSU MICHIO
IPC: C09D5/25
Filed: 1999-07-30
Granted: 2004-04-01
Abstract: A coating liquid for forming a silica-containing film with a low-dielectric constant, which enables the formation of a low-density film having a dielectric constant as low as 3 or less and being excellent not only in resistance of oxygen plasma and in process adaptation but also in adhesion to a substrate and in film strength, is provided. A substrate coated with the silica-containing film having the above characteristics, which is obtained by the use of the above coating liquid, is further provided. The coating liquid for forming a silica-containing film with a low-dielectric constant comprises a polymer composition mainly constituted by (i) a hydrolyzate of at least one alkoxysilane represented by the following formula (I) and/or at least one halogenated silane represented by the following formula (II), and (ii) a readily decomposable resin, XnSi(OR)4-n (I); XnSiX'4-n (II), in which X represents a hydrogen atom, a fluorine atom, an unfluorinated or fluorinated alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; X' represents a halogen atom; and n is an integer of 0 to 3.
Patent TW-432509-B (TW)
Title: Gate conductive layer formed on a semiconductor chip
Inventor: LU LING
IPC: H01L21/28
Filed: 1999-08-05
Granted: 2001-05-01
Abstract: The present invention provides a gate conductive layer formed on a semiconductor wafer. The semiconductor wafer has a surface formed thereon a silicon substrate. A gate oxide layer is formed on a predefined area of the surface of the silicon substrate. The gate conductive layer includes a first polysilicon layer formed on the gate oxide layer, a second polysilicon layer formed on the first polysilicon layer, and a metal silicide layer formed on the second polysilicon layer. The second polysilicon layer is formed by the transformation of an amorphous silicon layer. The grain size of the first polysilicon layer is smaller than that of the second polysilicon layer.
Patent TW-411554-B (TW)
Title: Method of fabricating rectangular oxides
Inventor: SUNG HUNG-JENG
IPC: H01L21/76
Filed: 1999-08-07
Granted: 2000-11-11
Abstract: The present invention discloses a method of fabricating rectangular oxides. A first sacrificial layer with a plurality of first parallel lines is formed on a shielding layer, and then a second sacrificial layer with a plurality of second parallel lines is formed on the shielding layer and the first sacrificial layer. The first parallel lines are substantially perpendicular to the second parallel lines. By utilizing the first sacrificial layer and the second sacrificial layer as mask, the shielding layer is patterned and etched to form rectangular oxides without suffering from corner rounding effect.
Patent TW-429569-B (TW)
Title: Packaging structure having electrostatic discharge protection resistor
Inventor: WU TSUNG-JR
IPC: H01L23/60
Filed: 1999-08-13
Granted: 2001-04-11
Abstract: A packaging structure having electrostatic discharge protection resistor is provided. A chip is bonded with a carrier having a plurality of welding spots and a plurality of pins. By the electrical connection between the welding spots and the chip, there are formed a plurality of electrostatic discharge protection resistors on the carrier.
Patent TW-418085-B (TW)
Title: Applicator, faecal management device having the applicator, and method for a caretaker or a wearer for the placement of a faecal management device
Inventor: COLES PETER
IPC: A61F13/15
Filed: 1999-09-07
Granted: 2001-01-11
Abstract: The present invention relates to a faecal management device for babies, children or adults to be a attached to the perianal area of the wearer. More particularly, the invention relates to an applicator for such a device (10). Claimed and described is an applicator (40), to be used in the placement of a faecal management device (10), said device (10) comprising a bag (11), said bag (11) having an aperture (21) and a flange (12) surrounding said aperture (21) for adhesive attachment to perianal area of a wearer, said applicator (40) comprising a handling portion (42); characterised in that said applicator (40) comprises at least two pressure points (42).
Patent TW-445655-B (TW)
Title: Semiconductor light receiving device
Inventor: TADATOMO KAZUYUKI
IPC: H01L31/103
Filed: 1999-09-15
Granted: 2001-07-11
Abstract: The present invention provides a semiconductor light receiving device having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that the light (L) can enter the light receiving layer. When the light receiving element is of a Schottky barrier type, the aforementioned electrode (2) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface (1a), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface (1a). In addition, when the light receiving element is of a photoconductive type, the aforementioned light receiving layer (1) is a first conductivity type I layer, and the aforementioned electrode (2) is an ohmic electrode of one polarity, and an ohmic electrode of the other polarity is formed directly or via a first conductivity type and low resistance GaN group semiconductor layer on the other surface of the light receiving layer (1).
Patent TW-466592-B (TW)
Title: Film forming equipment
Inventor: TOKUMASU NOBORU
IPC: C23C16/56
Filed: 1999-09-15
Granted: 2001-12-01
Abstract: The present invention relates to a film forming equipment for carrying out a method of forming a planarized interlayer insulating film to cover the wiring layers of a semiconductor integrated circuit device. The film forming equipment comprises a first source supplying unit for supplying a source of phosphorus-containing compound, a second source supplying unit for supplying a source of silicon-containing compound, a third source supplying unit for supplying a source of an oxidizing gas, a pressure-reducible film forming chamber connected to respective source supplying units for forming a film on a substrate by activating source gases and by heating or plasmanizing to react, and a pressure-reducible planarizing process chamber connected to the film forming chamber to enable shifting from film formation to a planarizing treatment without exposure of the substrate to an atmospheric air, and having a heating means for fluidizing a formed film on the substrate to planarize a surface of the formed film.
Patent TW-I221943-B (TW)
Title: A positive sensitive resin composition and a process for forming a resist pattern therewith
Inventor: IMAI GENJI
IPC: G03F7/039
Filed: 1999-10-15
Granted: 2004-10-11
Abstract: A pattern can be precisely formed by irradiating, with an active energy beam, a positive sensitive resin composition according to this invention comprising a base polymer, an ether-bond-containing olefinic unsaturated compound and an acid-generating agent, where the base polymer is a copolymer comprising the structural units represented by formulas (1) to (3): where R1 and R3 are each independently hydrogen or methyl and R2 is C1-C6 straight or branched unsubstituted alkyl or C1-C6 straight or branched substituted alkyl, wherein a, b and c are 0.05 to 0.7, 0.15 to 0.8 and 0.01 to 0.5, respectively and a+b+c=1.
Patent TW-505689-B (TW)
Title: Chemical-mechanical planarization (CMP) slurry and process for polishing copper or copper alloy, and tool for carrying out CMP of copper or copper alloy
Inventor: BRUSIC VLASTA
IPC: H01L21/321
Filed: 1999-10-28
Granted: 2002-10-11
Abstract: Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.
Patent TW-I272425-B (TW)
Title: Liquid crystal display devices and processes for producing the same
Inventor: SHIODA SATOSHI
IPC: G02F1/136
Filed: 1999-12-03
Granted: 2007-02-01
Abstract: Disclosed is a liquid crystal display device which can assure a desired cell gap at the time of heat contact bonding involved in the assembling of cells in a liquid crystal display device and, after the preparation of liquid crystal cells, has excellent reliability, can cope with an increase in cell thickness at high temperatures, and can inhibit a foaming phenomenon in a liquid crystal layer at low temperatures. The liquid crystal display device comprises: two substrates; a liquid crystal sandwiched and supported between the two substrates; and spacers, for maintaining a predetermined substrate-substrate spacing, provided on at least one of the substrates in its portions where the liquid crystal is sandwiched and supported, the spacers being formed of a photocured resin layer, the photocured resin layer having such properties that, as determined by the measurement of dynamic viscoelasticity in the temperature range of -40 DEG C to 80 DEG C, the storage modulus (E') is not more than 5.0x10<9> Pa with the loss tangent {tandelta=E"" (loss modulus)/E'} being not more than 0.1 and, as determined by the measurement of dynamic viscoelasticity in the temperature range of 120 DEG C to 180 DEG C, the storage modulus (E') is not less than 5.0x10<7> Pa with the loss tangent {tandelta=E"" (loss modulus)/E'} being not more than 0.3, or alternatively the photocured resin layer having a Young's modulus, derived from a stress-strain curve, of not more than 10,000 MPa at 25 DEG C and not less than 10 MPa at 150 DEG C or a dynamic hardness of 30 to 60 under load.
Patent TW-447176-B (TW)
Title: RF electric connector
Inventor: CHANG YAO-HAO
IPC: H01R13/70
Filed: 2000-01-18
Granted: 2001-07-21
Abstract: This invention is about a kind of RF electric connector, in which a metal shielding case body is installed and an insulating main body is encapsulated inside the metal shielding case body. The first and the second accepting via holes are installed inside the insulating main body. Signal terminal has the holding arm installed vertically and a bending portion. An interference arm is used to connect the holding arm with the bending portion, in which the bending portion is bent downward and is extended reversely to have a contact arm that is slightly extruded toward one side. After the end terminal of contact arm is slightly inclined inwards, an extending arm is installed downwards and the soldering foot is installed at the extension from the holding arm toward one side. A holding arm is installed at the grounding terminal and the soldering foot is vertically extended from the approximately central position of lower terminal of holding arm toward one side. A contact portion is installed at the upper edge position of holding arm and is used to abut on the extending arm of signal terminal. When the plug terminal is inserted to abut against the contact arm of this signal terminal so as to push and move it, the extending arm is separated from the contact portion stated above such that the on/off functions are obtained.
Patent TW-432638-B (TW)
Title: Manufacturing method for MOS transistor
Inventor: TSENG HUA-CHOU
IPC: H01L21/8238
Filed: 2000-01-28
Granted: 2001-05-01
Abstract: The present invention provides a manufacturing method for MOS transistor on a semiconductor chip surface. The semiconductor chip comprises a silicon substrate. The inventive manufacturing method is firstly forming a gate in a predetermined region on the silicon substrate surface; next, conducting an ion implantation; forming a doped region respectively on the silicon substrate at both sides of the gate which is used as heavily doped drain (HDD) of the MOS transistor; and, forming a uniform-thickness dielectric containing no oxygen on the semiconductor chip surface to cover the silicon substrate and the gate surface; forming spacers on the dielectric surface around both sides of the gate; finally, conducting an ion implantation and forming a source and a drain respectively on the silicon substrate at the outer edge of the spacer on both sides of the gate to complete the process of the MOS transistor.
Patent TW-466886-B (TW)
Title: Control system and method for digital sound effect
Inventor: JENG CHI-CHENG
IPC: H04S3/00
Filed: 2000-02-02
Granted: 2001-12-01
Abstract: The invention discloses a control system and method for digital sound effect applied in the home cinema or stereo system, in which, during transmitting sound effect data, the transmission line for sending analog signal of sound effect to the bass speaker also transmits digital control signal to the control circuit of the sound effect system at the same time for controlling the parameters of volume, quality or power supply, etc. of each speaker. Besides, status of sound effect system also can be instantly sent back to the host computer by the same transmission line. Hence, listener can adjust all the speaker conditions from the host computer and the host computer can learn the status of the sound effect system to perform a further process in accordance with the returned status.
Patent TW-498305-B (TW)
Title: Optical disc, optical disc recording and reproducing apparatus, and optical disc recording and reproducing method
Inventor: MURASE KAORU
IPC: G11B27/036
Filed: 2000-03-09
Granted: 2002-08-11
Abstract: An optical disc recorder and player enable entry points to be set as desired in a plurality of logically meaningful reproduction paths to skip to various points as desired in any of the possible paths. The optical disc recorder and player use information about a plurality of independent reproduction paths, and management information having a plurality of reproduction entry points for each of the reproduction paths, thereby efficiently utilizing the random access capability unique to disc media.
Patent TW-451245-B (TW)
Title: Cathode ray tube
Inventor: LEE JONG-HYUK
IPC: H01J9/20
Filed: 2000-03-31
Granted: 2001-08-21
Abstract: A CRT has an improved contrast with a provision of a filter layer where nano-sized metal particles are dispersed in a dielectric matrix to selectively absorb light in predetermined wavelengths, specifically wavelengths between peak wavelengths of primary colors emitted by phosphors coated on the inner surface of the face plate. The improved contrast is a result of the metal particles in a dielectric matrix resonating with particular wavelengths and thus absorbing them.
Patent TW-451172-B (TW)
Title: AC plasma display apparatus
Inventor: SHINO TAICHI
IPC: G09G3/288
Filed: 2000-04-08
Granted: 2001-08-21
Abstract: An AC plasma display panel includes a plurality of parallel scan electrodes and a plurality of parallel sustain electrodes. Each of sustain electrodes is extended parallel to scan electrodes. Scan and sustain electrodes are positioned alternately so that each one of scan and sustain electrodes positions adjacent to and paired with the other of scan and sustain electrodes. Also, the panel includes a plurality of parallel data electrodes. The data electrodes extend substantially perpendicular to scan and sustain electrodes. Scan and sustain electrodes are applied with a certain current so that an electromagnetic noise generated in the electrodes can be cancelled by another.
Patent TW-442370-B (TW)
Title: Diamond wire saw cutting machine
Inventor: HUANG JUNG-TANG
IPC: B28D5/00
Filed: 2000-05-24
Granted: 2001-06-23
Abstract: This invention is to develop machine tool utilizing a diamond wire saw to cut a non-conductive material. The cutting method is similar to that of the EDM, and can be used to cut the hard and brittle materials, such as ceramics, composite materials, silicon and so on, which can not be machined to the required shape by conventional machining method. This machine tool is a machine utilizing a controller mainly the personal computer to proceed numerical control. The machine uses a diamond wire saw moving in Z-axis or a certain direction to achieve the cutting function. Instead of conventional threading and reeling, winding type of the diamond wire saw is used for easy assembling and disassembling. When used for cutting a specified shape, the shape can be defined numerically, and the X- and Y-axis displacement of the workpiece is controlled by numerical control, so as to control the cutting accuracy within the required range. This cutting machine comprises a guiding wheel set installed before and after the workpiece, which rotates along the extension direction of the diamond wire saw by means of the rotating disk and the rotating beam to give the supporting reaction force no matter what the cutting angle is. Besides, a tension control mechanism is provided under the passive roller to maintain a constant tension. High resolution analysis of optical video camera is also used to measure the degree of wire bending, so as to obtain the cutting force and the reaction force of the workpiece by cuculation, and then the rotational speed of the motor is adjusted to change the wire pulling speed of the diamond wire saw and the workpiece feeding speed, so as to achieve the object of cutting accurately.
Patent TW-508961-B (TW)
Title: Voice command system and method
Inventor: SON WILLIAM Y
IPC: H04M1/27
Filed: 2000-05-02
Granted: 2002-11-01
Abstract: A system and method for allowing a communication device to accepts voice commands from a user. The voice commands can include commands to execute or dial key sequences or commands to control device functionality. Voice commands are received from a user of the communication device, indicating a command to be carried out by said communication device. The commands are interpreted and executed by the communication device.