Patent SG-11201807926P-A (SG)
Title: A through silicon interposer wafer and method of manufacturing the same
Inventor: SINGH NAVAB
IPC: H01L23/48
Filed: 2017-03-23
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 111111111111101101010111110101111101101110011111H011111111111111110111111 International Bureau ... .... ..Yjd ..... ...,/ (10) International Publication Number (43) International Publication Date WO 2017/164816 Al 28 September 2017 (28.09.2017) WIP0 I PCT (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every HO1L 23/48 (2006.01) B81B 7/00 (2006.01) kind of national protection available): AE, AG, AL, AM, HO1L 23/52 (2006.01) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (21) International Application Number: DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, PCT/SG2017/050145 HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, (22) International Filing Date: KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, 23 March 2017 (23.03.2017) MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (25) Filing Language: English RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, (26) Publication Language: English TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: 10201602341R 24 March 2016 (24.03.2016) SG (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (71) Applicant: AGENCY FOR SCIENCE, TECHNOLOGY GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10 TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Connexis North Tower, Singapore 138632 (SG). TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (72) Inventors: SINGH, Navab; c/o Industry Development, In- stitute of Microelectronics, 2 Fusionopolis Way, #08-02 LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Innovis Tower, Singapore 138634 (SG). CHEAM, Daw SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Don; c/o Industry Development, Institute of Microelectron- ics, 2 Fusionopolis Way, #08-02 Innovis Tower, Singapore Declarations under Rule 4.17: 138634 (SG). — of inventorship (Rule 4.17(iv)) (74) Agent: SPRUSON & FERGUSON (ASIA) PTE LTD; Published: P.O. Box 1531, Robinson Road Post Office, Singapore 903031 (SG). — with international search report (Art. 21(3)) (54) Title: A THROUGH SILICON INTERPOSER WAFER AND METHOD OF MANUFACTURING 23 22 23 60 k 22 I 50 31 53 is 23 32 80 22 22„, THE SAME 11 1-1 12 51 24 GO 7 — 1 I / f iv (”) 21 FIG. 1A 22 23 24 11 1-1 10 IN 1-1 (57) : A Through Silicon Interposer Wafer and Method of Manufacturing the Same A through silicon interposer wafer hay- = ing at least one cavity formed therein for MEMS applications and a method of manufacturing the same are provided. The through silicon interposer wafer includes one or more filled silicon vias formed sufficiently proximate to the at least one cavity to provide 0 support for walls of the at least one cavity during subsequent processing of the interposer wafer.