Patent SG-11201901207T-A (SG)
Title: Strip process for high aspect ratio structure
Inventor: VANIAPURA VIJAY M
IPC: H01L21/3065
Filed: 2017-05-17
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 22 March 2018 (22.03.2018) WIPO I PCT (10) International Publication Number WO 2018/052494 A1 (51) International Patent Classification: H01L 21/033 (2006.01) H01L 21/02 (2006.01) H01L 21/3065 (2006.01) (21) International Application Number: PCT/US2017/033047 (22) International Filing Date: 17 May 2017 (17.05.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/394,242 14 September 2016 (14.09.2016) US 62/456,911 09 February 2017 (09.02.2017) US (71) Applicant: MATTSON TECHNOLOGY, INC. [US/US]; 47131 BAYSIDE PARKWAY, FREMONT, Cal­ ifornia 94538 (US). (72) Inventors: VANIAPURA, Vijay M.; 47131 Bayside Park­ way, Fremont, California 94538 (US). MA, Shawming; 47131 Bayside Parkway, Fremont, California 94538 (US). HOU, Li; 47131 Bayside Parkway, Fremont, California 94538 (US). (74) Agent: WORKMAN, J., Parks; DORITY & MANNING, P.A., P O BOX 1449, GREENVILLE, South Carolina 29602-1449 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, © 00 •t ^ (57) : Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer ^ layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures. CJ o £ [Continued on next page] WO 2018/052494 A1 llll II II11 III III III 111 III I Hill II III SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))