baber/WOPTO huggingface dataset:
Patent KR-20010082029-A (KR)
Title: A mosfet with high dielectric constant gate insulator and minimum overlap capacitance
Inventor: BOYD DIANE CATHERINE
IPC: H01L21/302
Filed: 2001-01-31
Abstract: PURPOSE: To provide a metal oxide film semiconductor field effect type(MOSFET) device, which has a gate insulator of high permittivity (permittivity higher than 7), low overlap capacity (at most 0.35 fF/μm) and a channel length shorter than the gate length as defined by lithography. CONSTITUTION: This method contains a damascene treatment process and a chemical oxide removal(COR) process. In the COR process, a large tape is formed on a pad oxide layer. When the pad oxide layer is combined with the gate insulator of high permittivity, low overlap capacity, short channel length and superior device characteristic can be realized, as compared with an MOSFET device which is formed by using a normal complementary metal oxide film semiconductor(CMOS) method.
Patent KR-20020066569-A (KR)
Title: Method of forming a storage node in an integrated circuit device
Inventor: KIM CHANG GYU
IPC: H01L27/108
Filed: 2001-02-12
Abstract: PURPOSE: A method for forming a storage node of a semiconductor device is provided to improve a characteristic of a contact resistance between a storage node contact plug and a storage node. CONSTITUTION: An isolation region(202) is formed on a substrate(200). A transistor including a source(208a), a drain(208b), and a gate electrode(206) is formed thereon. A gate oxide layer(204) is formed between the gate electrode(206) and the substrate(200). The first interlayer dielectric(210) is formed thereon. A bit line contact hole is formed by patterning the first interlayer dielectric(210). A bit line is formed on the first interlayer dielectric(210). The second interlayer dielectric is formed on the bit line and the first interlayer dielectric(210). A storage node contact hole(221) is formed by patterning the second interlayer dielectric and the first interlayer dielectric(210). A contact plug(222) is formed thereon. A sacrificial oxide layer is formed on the contact plug(222). A storage node opening is formed by patterning the contact plug(222) and an oxide layer. A conductive material(228) is formed along the storage node opening on the sacrificial oxide layer. An insulating layer is formed on the conductive material(228). A storage node is formed by etching the insulating layer and the conductive material(228).
Patent KR-20020066821-A (KR)
Title: Layering system for mult-layer printed circuit board
Inventor: BAEK NAM HEON
IPC: H05K3/46
Filed: 2001-02-14
Abstract: PURPOSE: An apparatus is provided to achieve an improved work efficiency by automatically and stably mounting materials, while improving quality of PCB by preventing foreign substances from entering the gap formed between the copper foil and SUS plate. CONSTITUTION: An apparatus comprises column posts(21,22) each of which has a predetermined height; a pickup unit(30) supported by the column posts, and which moves a copper foil unit mounted onto a material mount and standby unit of a multilayer PCB manufacturing system, to a lower cover of a stacking unit for stacking the copper foil units; an elevating driving unit(70) for elevating the pickup unit in a vertical direction; and a mounting unit disposed underneath the stacking unit, and which mounts the copper foil unit being moved by the pickup unit, to the lower cover in a stable manner. The pickup unit includes a pickup base(31); a slide arranged at both sides of the pickup base, in such a manner that the slide is slidable through a slide guiding member(32); a slider cylinder(34) for transmitting a driving force to the slider; and a plurality of clamps arranged at the inner surface of the slide.
Patent KR-20010085651-A (KR)
Title: Method for treating metallic surfaces
Inventor: SASAKI MOTOHIRO
IPC: B05D7/14
Filed: 2001-02-27
Abstract: PURPOSE: To provide a metallic surface treatment method which is adequate for metals, more particularly galvanized steel sheets, does not contain chromium in a metallic surface treating agent and is capable of imparting excellent workability and corrosion resistance to the steel sheets. CONSTITUTION: This metallic surface treatment method consists in treating the metal clad steel sheet with a non-chromate metallic surface treating agent containing specific ratios of (a-1) a silane coupling agent and/or its hydrolysis condensate, (a-2) water dispersible silica and (a-3) a zirconium compound as zirconium ions and/or titanium compound in one litter of the metallic surface treating agent and drying the steel sheet, then applying a rust preventive coating agent containing specific ratios of (b-1) the silane coupling agent and/or its hydrolysis condensate, (b-2) the water dispersible silica and (b-3) at least one kind of phosphorus-containing ions selected from phosphoric acid ions, phosphorous acid ions and hypophosphorous acid in one litter of the an aqueous resin solution or water dispersion of the resin.
Patent KR-20010067649-A (KR)
Title: moxa cautery apparatus using a mugwort
Inventor: BAE SAM HOON
IPC: A61H39/06
Filed: 2001-02-28
Abstract: PURPOSE: A moxa cautery apparatus is provided to allow a patient to treat by oneself, to prevent burns and a fire, to adjust the temperature of hot air, and to expand hypodermic capillary vessels by using a vacuum pressure. CONSTITUTION: An upper screw part(19) of a flexible adsorption tube(1) is integrated with a lower screw part(19-1) of a cylindrical vessel(12). If a pressure plate(4) is compressed by pulling a handle(20), a recess(11) formed on the flexible adsorption tube, a wrinkled tube(3) penetrating an inner space(6), and an elastic spring(5) are constricted, thereby the air in the inner space raises a valve(8) to be discharged via a vent hole(9). As soon as the air is discharged, the valve is closed at the same time with the inlet of outside air, thereby the inner space becomes vacuum condition. By the complex action of the support force of the elastic spring, the restoring force of the wrinkled tube and the recess, and the structure of the flexible adsorption tube, the flexible adsorption tube and the bottom surface of the wrinkled tube forcibly contact with the skin of a patient to adsorb the moxa cautery apparatus to the skin.
Patent KR-20020005380-A (KR)
Title: Apparatus of cleaning dirty water
Inventor: NAM JIN U
IPC: B01D33/06
Filed: 2001-03-02
Abstract: PURPOSE: A sewage purifying equipment is provided, which can minimize water content in filtered solid matter so that the filtered matter can be used directly as compost without any additional treatment. The filter system can be used semi-permanently without replacing filter and can be applied to various facilities where filtrate should be minimum such as filter of grinding oil of grinding machine. CONSTITUTION: The equipment comprises a filter drum(10), an influent water supplying part(1), a filtrate basin(30), a solid matter chute(20), a discharge pipe(22), a solid matter collecting tank(50), a nozzle(40), an air supplying part(S) and a vacuum generator. The influent water enters the rotational filter drum(10) of micromesh and micro solid matter contained in the water is filtered and the filtrate is collected in filtrate basin(30). The part of filtrate is pumped and atomized through nozzle(40) to the outside of filter drum(10) to exfoliate micro solid attached to inside of the drum(10) into a funnel(20) to discharge to solid matter collecting tank(50) through a discharge pipe(22). In the discharge pipe(22), an auxiliary discharge pipe(35a) is inserted pointing downstream to atomize compressed air, thus increasing velocity pressure and reducing static pressure so that vacuum is formed in the system, the vacuum expedite to exfoliate fine solid matter from the filter screen(10).
Patent KR-20020071980-A (KR)
Title: Oyster absorbent for SO2/NOx removal and method for preparing the same
Inventor: CHOI SEOK GYU
IPC: B01J20/00
Filed: 2001-03-08
Abstract: PURPOSE: An oyster shell absorbent for the removal of SO2 and NOx generated from desulfurization process and a method for preparing the same are provided. CONSTITUTION: The method for fabricating oyster shell absorbent includes the steps of calcining 70 to 100 wt.% of oyster shell at 900 deg.C; mixing calcined oyster shell with 0 to 30 wt.% of NaCl; hydrating the mixture at 90 deg.C for 12 to 24 hrs; and drying, pulverizing and sieving.
Patent KR-20020037249-A (KR)
Title: Prevention device of iron corrosion and scale adhesion inside of pipe
Inventor: KUMANO KATSUYUKI
IPC: F16L58/00
Filed: 2001-03-17
Abstract: PURPOSE: A device for preventing the rust and scale attachment on the interior of piping is provided to prevent the oxidization of nuclear magnetic resonance energy generating sinterings and dispose the sinterings along an outer peripheral surface of piping efficiently. CONSTITUTION: A device for preventing the rust and scale attachment on the interior of piping includes a pair of assemblies(2A,2B) and each of the assemblies is formed of a main body(10A,10B), stainless covers(20A,20B) covering the interior of the body, and a plurality of nuclear magnetic resonance energy generating sinterings(3A,3B) disposed along an outer peripheral surface of the piping, wherein the respective nuclear magnetic resonance energy generating sinterings are covered by resin on electric poles and fitted into an alignment tray so that the sinterings are integrally coupled by the resin.
Patent KR-20010090507-A (KR)
Title: Color cathode ray tube and color picture tube comprising the same
Inventor: INOUE MASATSUKU
IPC: H01J29/86
Filed: 2001-03-22
Abstract: PURPOSE: A color cathode ray tube and color picture tube apparatus having the same is provided to achieve a superior quality level of outer light reflection at the inner surface of panel, while alleviating deterioration in the color purity caused due to the error of beam landing. CONSTITUTION: A color cathode ray tube comprises a vacuum envelope(10) having a nearly rectangular face panel(12); a shadow mask(22) arranged within the vacuum envelope to be opposed to a phosphor screen(20) formed at an inner surface of the face panel; and an electron gun(24) installed in the vacuum envelope, and which emits electron beams onto the phosphor screen through the shadow mask. The thickness of the face panel is formed such that the peripheral edge portion is larger than at the center portion of the face panel. The curvature radius in the short axis direction on the long axis at the inner surface of the face panel has a minimal value at a position spaced from a center of the face panel further toward the long axis end side than L/2, provided that a distance from the center to the long axis end of the face panel is L. The face panel satisfies the relations; TD<2.5TC, TV<2.0TC, TH<2.0TC, wherein TC is the thickness of the face panel at the center portion, TD is the thickness of the face panel at a diagonal axis effective dimension end, TV is the thickness of the face panel at a short axis effective dimension end, and TH is the thickness of the face panel at a long axis effective dimension end.
Patent KR-20010044829-A (KR)
Inventor: JUNG SU IM
IPC: B24B31/02
Filed: 2001-03-30
Abstract: PURPOSE: A heald abrasion barrel and abrasing method improves a workability and an abrasing performance and prevents a heald from getting bent. CONSTITUTION: A heald abrasing method comprises a process to supply abrasive composed of grind stone, water and abrasive powder mixed to an abrasion barrel(20) with healds(10) inputted, a process to seal the abrasion barrel(20) air-tightly and a process to rotate multiple laid barrels(20) slowly using a rotating device. The mixing proportion of the abrasive is 30-60% of the grind stone, 30-65% of water and 5-10% of the abrasive powder. The healds(10) are to occupy less than half of the volume of the abrasion barrel(20).
Patent KR-20020083816-A (KR)
Title: A 3D photograph manufacturing method via lenticular
Inventor: KIM DONG UN
IPC: G03B35/00
Filed: 2001-04-30
Abstract: PURPOSE: A method for producing three-dimensional photograph is provided to photograph and store images in a real time basis, while reducing cost and shortening time. CONSTITUTION: A method comprises a first step of photographing three-dimensional images using a lenticular lens; a second step of editing the photographed image through the use of a graphic tool program; a third step of processing the edited image in stereoscopic images; a fourth step of outputting the stereoscopic images on a lenticular sheet; a fifth step of joining photographs with the lenticular sheet; and a sixth step of performing a laminating process. The third step includes a step(S1) of setting the type of LPI and number and of frames; a second step(S2) of reading a file passed through the graphic tool program; a third step(S3) of disposing images into layers, adjusting depth of image and adjusting flip for designating the number of frames; a fourth step(S4) of generating images on the basis of the number of frames; a fifth step(S5) of generating images adopting three-dimensional effect; a sixth step(S6) of pre-viewing the final image and correcting errors; and a sixth step(S7) of printing images.
Patent KR-20020084603-A (KR)
Title: Beam lead forming method for flexible circuit film
Inventor: KO SEOK
IPC: H01L21/60
Filed: 2001-05-03
Abstract: PURPOSE: A method for shaping a beam lead of a flexible circuit film is provided to perform a beam lead shaping process within a short time by simplifying a bending process for the beam lead of the flexible circuit film. CONSTITUTION: A tray for shaping a flexible circuit film into one pocket is prepared to direct a beam lead to the same direction(91). The tray is supplied to a beam lead shaping apparatus(92). The beam lead shaping apparatus is formed with a test part for checking an aligning state of the flexible circuit film, a beam lead shaping portion for bending a beam lead, an unloading portion for loading the tray, the second transfer portion for transferring the flexible circuit film from the test portion to the beam lead shaping portion, the third transfer portion for transferring the flexible circuit film to the tray of the unloading portion, a tray loader for loading the tray, and the first transfer portion for transferring the flexible circuit film to the test portion. A beam lead shaping process is performed after the tray is supplied to the beam lead shaping apparatus(93).
Patent KR-20010104233-A (KR)
Title: 평면 가요성 케이블의 이중 나선형 리드 드레싱
IPC: H01B7/08
Filed: 2001-05-09
Abstract: 평면 케이블 어셈블리를 제공하기 위한 방법 및 장치에 관한 것으로, 상기 평면 케이블 어셈블리는 각각의 비직교 근접 종단부 및 각각의 비직교 말단 종단부를 구비하는 2개 이상의 평면 케이블 서브 어셈블리가 종단점에서의 기계적 응력을 감소시키는 동시에 자기 지지 케이블 어셈블리를 제공하는 대략 직선의 나선형 구조를 형성하도록 변형된 것이다.
Patent KR-20010105219-A (KR)
IPC: B01D53/50
Filed: 2001-05-16
Abstract: A method for treating a gas containing a SO3 component, which comprises adding a sodium carbonate powder having a mean particle diameter of at most 20  mu m to the gas to remove the SO3 component from the gas. <IMAGE>
Patent KR-20010070687-A (KR)
Inventor: CHOI JAE SONG
IPC: F03G3/00
Filed: 2001-05-30
Abstract: PURPOSE: A self-weight motor is provided to drive an elevator by using weight of the elevator. CONSTITUTION: A lever fills balls to an elevator for lowering the elevator. The elevator is lowered for discharging the balls. Then, the balls are transferred to a lower passage for being placed on a plate. The lever pushes the plate for the balls to input to a ball housing. The lever is contacted to a dropper bar for the dropper to push the balls. Then, the balls are inputted to the elevator through an upper ball passage. An elevator intermediate gear makes one round for one gourd. Moreover, a shuttle gear or a lever gear elevates the lever for 50-60 degrees for elevating the balls. Therefore, the lever elevates the balls, and the elevator receives the balls for dropping the balls. Moreover, the balls are elevated by the lever.
Patent KR-20020091731-A (KR)
Title: / M/S RF omitted
Inventor: PYUN CHANG SEOP
IPC: G07B15/04
Filed: 2001-05-31
Abstract: PURPOSE: An M/S RF combined gate system for collecting the subway fee automatically is provided, to allow both the M/S ticket and the RF card to be treated in a single gate system. CONSTITUTION: The M/S RF combined gate system comprises an already used M/S exclusive use gate; and a RF device set in the gate. The CPU of the combined gate can treat both the M/S type signal and the RF type signal; and the data of different form can be converted into the data of another form and all the data can be controlled by each control part. The CPU communicates with an M/S ticket recognition, but the CPU is connected with and communicates with an RF card recognition part when an RF card is tagged by the operation of a communication switch.
Patent KR-20010111018-A (KR)
Title: 폴리부타디엔 및 이의 제조방법
IPC: C08F4/44
Filed: 2001-06-07
Abstract: Tcp/ML l+4 비(Tcp; 25℃에서 5% 톨루엔 용액 점도, ML l+4 ; 100℃에서 무니 점도)가 2.5이상을 갖는 원료 폴리부타디엔을 전이금속 촉매의 존재하에서 변성하여, 적당한 1,2-구조함유량으로 고-시스 및 저-트랜스 구조를 갖고 콜드 흐름성질과 같은 향상된 특성을 갖는 변성 폴리부타디엔.
Patent KR-20020094576-A (KR)
Title: Digital video recording retrieval method using compact information index
Inventor: BONG SU HYEON
IPC: G11B27/10
Filed: 2001-06-12
Abstract: PURPOSE: A method for searching DVR(Digital Video Recording) by using a simple information index is provided to more quickly search image data by date, time and minute, and improve the convenience of users by enabling users to select a recording time of an image to be generated with a mouse. CONSTITUTION: A method for searching DVR by using a simple information index includes the steps of receiving regeneration image selecting information including at least one among a regeneration start time, a storage method, and a camera number having recorded(501-503); searching the simple information index for extracting a location of a first image in a detail information index related at the regeneration start time(507); searching the detail information index corresponding to the extracted location for extracting image location of the first image in image data(509); searching image data corresponding to the location of the first image for reading the first image, and displaying the read first image to a user(511); searching a detail information index of the next location in order for extracting image location, searching the image data corresponding to the extracted image location, reading the next image, and displaying the image to the user(513-515).
Patent KR-20030000124-A (KR)
Title: Forming method for gate electrode of semiconductor device
Inventor: JUNG SEONG HUI
IPC: H01L21/334
Filed: 2001-06-22
Abstract: PURPOSE: A method for fabricating a gate electrode of a semiconductor device is provided to prevent gate resistance from increasing by preventing abnormal oxidation of a tungsten layer pattern, and to improve an operating characteristic and reliability by increasing oxidation tolerance in a process using a subsequent nitride layer. CONSTITUTION: An isolation layer(13) for defining an active region is formed in a semiconductor substrate(11). A gate insulation layer, a polycrystalline silicon layer, a WNx layer and a W layer are sequentially formed on the semiconductor substrate. The stacked structure is etched to form a gate insulation layer pattern(15), a polycrystalline silicon layer pattern(17), a WNx layer pattern and a W layer pattern(21) by using a gate electrode mask as an etch mask. A predetermined thickness of a capping silicon layer is formed on the resultant structure. The capping silicon layer is selectively oxidized to form a silicon dioxide layer(25) while the WNx layer pattern is formed of a WSiN layer pattern(20).
Patent KR-20030000220-A (KR)
Title: Method for forming the Anti fuse of semiconductor device
Inventor: HONG HYEONG SEON
IPC: H01L21/82
Filed: 2001-06-22
Abstract: PURPOSE: A method for fabricating an anti fuse of a semiconductor device is provided to reduce a recovery phenomenon in which both ends of the anti-fuse are electrically disconnected even after the anti-fuse is broken, by performing an ion implantation process using P, As, or Sb ions on a region to be used as a fuse. CONSTITUTION: An interlayer dielectric(11) is thinly deposited on a substrate(10) having a predetermined underlying structure. A positive resist pattern is formed on the interlayer dielectric. An ion implantation process using the positive resist as a mask is performed to form an ionized substrate(12). A conductive layer(14) is deposited on the interlayer dielectric. A negative resist layer is deposited to eliminate a region except the fuse of the conductive layer and the interlayer dielectric. The conductive layer and the interlayer dielectric in a region except the fuse are dry-etched by using the negative resist layer. A metal-1 contact(16) is formed on the interlayer dielectric.
Patent KR-20030000702-A (KR)
Title: Seat belt lock cover
Inventor: OH SUN YEONG
IPC: B60R22/12
Filed: 2001-06-26
Abstract: PURPOSE: A lock cover used for a seat belt is provided to improve an external appearance of the seat belt and to improve the convenience of use by automatically performing a locking operation. CONSTITUTION: An opening(112) is formed in a main housing. A release button(40) is positioned below the opening(112). A cover plate(120) is provided to open/close the opening(112) formed in the main housing. The cover plate(120) is slidably installed below an upper surface of the main housing. The cover plate(120) is formed at a lower surface thereof with a saw tooth part(122). A gear(132) is engaged with the saw tooth part(122) and coupled with a rotating shaft of a driving device. The gear(132) is driven by means of a predetermined driving device(134). The driving device(134) includes a motor and a control unit.
Patent KR-20030000950-A (KR)
Inventor: LEE BYEONG CHEOL
IPC: A47L13/24
Filed: 2001-06-27
Abstract: PURPOSE: A fabrication method of a semiconductor device is provided to prevent a short by forming a buffer oxide layer at sidewalls of a polycide gate. CONSTITUTION: After forming an isolation layer(20) on a semiconductor substrate(10), a polycide gate(32) is formed on an active region of the substrate. After forming an oxide spacer(40) at both sidewalls of the polycide gate(32), a buffer oxide layer(50) is formed at both sidewalls of the oxide spacer(40). A nitride barrier layer(60) and an interlayer dielectric(70) are sequentially formed on the entire surface of the resultant structure. A landing plug contact is formed by selectively etching the interlayer dielectric(70).
Patent KR-20030002479-A (KR)
Title: Nitride CMP Slurry having Selectivity to Oxide
Inventor: KIM HYEONG HWAN
IPC: B24B57/02
Filed: 2001-06-29
Abstract: PURPOSE: Provided is a slurry for the chemical mechanical polishing(CMP) of nitride having a selective ratio against oxide, which prevents the oxide from polishing earlier than the nitride and can be used for producing high density and high integrated semiconductor elements. CONSTITUTION: The slurry contains 0.01-20wt%(based on the total weight of the slurry) of phosphoric acid and 0.1-20wt%(based on the total weight of the slurry) of a polishing agent selected from the group consisting of cesium oxide(CeO2), manganese oxide(MnO2), zirconia(ZrO2), alumina(Al2O3), silica(SiO2), or a mixture thereof. And the pH of the slurry is 1-5.