baber/WOPTO huggingface dataset:
Patent TW-347345-B (TW)
Title: Apparatus and method for removing volatile organic compounds from a stream of contaminated air with use of an adsorbent material
Inventor: EARL C VICKERY
IPC: B01D53/10
Filed: 1998-04-23
Granted: 1998-12-11
Abstract: An apparatus for removing volatile organic compounds from a stream of contaminated air with use of an adsorbent material, which comprises: means for containing a stream of contaminated air and an adsorbent material and having a first end into which the stream of contaminated air is forced at a predetermined velocity rate and having a second end from which clean air is released; means being disposed between the first end and the second end and for increasing the predetermined velocity rate of the stream such that the adsorbent material is suspended in the stream, in which the adsorbent material which is suspended in the stream adsorbs volatile organic compounds in the stream; means being coupled to the containing means and a heat source, for reconditioning the adsorbent material, which is adapted to receive the adsorbent material which contains the volatile organic compounds, and is adapted to remove the volatile organic compounds from the adsorbent material which contains the volatile organic compounds; the reconditioning means being adapted to emit into a heat source the volatile organic compounds which are removed from the adsorbent material which contains the volatile organic compounds.
Patent TW-455950-B (TW)
Title: Method for patterned copper etch for micron and submicron features, using enhanced physical bombardment
Inventor: YE YAN
IPC: C23F4/00
Filed: 1998-05-22
Granted: 2001-09-21
Abstract: Copper can be pattern etched at acceptable rates and with selectivity over adjacent materials using an etch process which utilizes a solely physical process which we have termed ""enhanced physical bombardment"". Enhanced physical bombardment requires an increase in ion density and/or an increase in ion energy of ionized species which strike the substrate surface. To assist in the removal of excited copper atoms from the surface being etched, the power to the ion generation source and/or the substrate offset bias source may be pulsed. In addition, when the bombarding ions are supplied from a remote source, the supply of these ions may be pulsed. Further, thermal phoresis may be used by maintaining a substrate temperature which is higher than the temperature of a surface in the etch chamber. It is also possible to use a chemically reactive species in combination with the physical ion bombardment without causing copper corrosion problems, so long as the concentration of the chemically reactive ion component is sufficiently low that the etching is carried out in a physical bombardment dominated etch regime.
Patent TW-466254-B (TW)
Title: Photochromic compositions having improved fade rate
Inventor: KRISHNAN SIVARAM
IPC: C08K5/357
Filed: 1998-07-01
Granted: 2001-12-01
Abstract: A thermoplastic molding composition is disclosed comprising (A) at least one resinous component selected from the group consisting of (i) a homogeneous blend of polycarbonate resin and polycaprolactone and (ii) a copoly(carbonate-lactone) copolymer, and (B) at least one compound selected from a group consisting of benzopyrans, naphthopyrans, spirobenzopyrans, spironaphthopyrans, spirobenzoxazines, spironaphthoxazines, fulgides and Fulgimides. The composition which contains the photochromic compound at an amount of 0.01 to 1.0 parts per hundred parts of weight of said (A) exhibits good photochromic properties.
Patent TW-396530-B (TW)
Title: Method for simplifying masking process to form a raised type fuse structure and fuse window with sidewall protection structure
Inventor: LIAU WEN-SHIANG
IPC: H01L21/768
Filed: 1998-07-16
Granted: 2000-07-01
Abstract: A method for reducing the passivation layer process of masking fabrication is provided, which could reduce the required photo or masking process after metal line formed, and in the contact hole process, form fuse window in the same process. Moreover, the method could include the steps to form bonding pad opening when the sidewall of fuse window is defined. By process integration, it could form a raised type fuse structure with upside and sidewall protected by dielectric layer and fuse window with sidewall waterproofed structure.
Patent TW-382747-B (TW)
Title: Detergent for semiconductor device production process or for liquid crystal device production process
Inventor: FUKUMURA KAZUNORI
IPC: C11D7/16
Filed: 1998-08-04
Granted: 2000-02-21
Abstract: This detergent contains, as an active ingredient, a polyphosphoric acid-urea condensate or phosphoric acid-urea polymer that is obtained by reaction of orthophosphoric acid with urea. This detergent is used for cleaning a metal surface and a glass surface in at least one process of semiconductor device production and liquid crystal device production. According to this invention, the etching residue and impruities on metal (including non-metal) and galss surface can be effectively cleaned off with highly environmental and work safety and without problem of metal corrosion.
Patent TW-I222470-B (TW)
Title: Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method
Inventor: IIDA MAKOTO
IPC: C30B15/00
Filed: 1998-09-28
Granted: 2004-10-21
Abstract: A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080 DEG C is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080 DEG C in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200 DEG C is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200 DEG C in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm<2> or less), LSTD, and COP (10 defects/cm<2> or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.
Patent TW-415095-B (TW)
Title: Method for fabricating mask read only memory with medium current implanter
Inventor: LI JEN-RUEI
IPC: H01L27/112
Filed: 1999-01-15
Granted: 2000-12-11
Abstract: The invention provides a method for fabricating mask read only memory (MROM) devices with a medium current implanter. The method for fabricating MROM with a medium current implanter comprises forming a metal oxide semiconductor (MOS) transistor array on a substrate, in which each MOS transistor includes a gate oxide layer, a gate electrode, a source area and a drain area. Then, there are sequentially formed an un-doped silicon glass (USG) layer, a boron phosphorous silicon glass (UPSG) layer, a metal electrode and a passivation layer on the MOS transistor array. After receiving the purchase order from customer for ROM, a etch back procedure is executed on the MOS transistor array with the passivation layer, so as to remove the selected part of the passivation layer in accordance with the code of a ROM and further form the contact. The BPSG layer inside the contact is etched back partially until the residual thickness of the BPSG layer reaches a predefined thickness. The recording ROM code ions go through the contact and are implanted to the substrate with a medium current implanter. The residual thickness of the back etched BPSG layer in the contact is set up in the range capable of being conducted by the medium current implanter. The method provided by the invention features the advantages of short turnaround time and low fabrication cost.
Patent TW-452607-B (TW)
Title: Production of a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal
Inventor: JANG GUO-MING
IPC: C30B29/00
Filed: 1999-03-26
Granted: 2001-09-01
Abstract: Provided a process for producing a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal by depositing a bilayer-stacked tungsten metal in a same chamber in the manner of not breaking the vacuum therein. Firstly, a layer of amorphous-like tungsten is deposited to increase thermal stability and to prevent diffusion of fluorine atom. Next, a nitridizing treatment is performed thereon to promote further the barrier property and thermal stability of the amorphous-like tungsten. Finally, conventional selective chemical vapor deposited tungsten having low is deposited on the amorphous-like tungsten. Through the deposition of bilayer tungsten according to the process of the invention, thermal stability of conventional selective chemical vapor deposited tungsten can be increased greatly. For the manufacture of a extremely large integrated circuit, stacked tungsten not only can prevent fluorine atom from diffusing downwardly in the course of deposition, but also can increase thermal stability, and furthermore, the resistance thereof is much lower that of tungsten disilicide. Accordingly, the process of the invention is indeed a technique having high potential.
Patent TW-412902-B (TW)
Title: Apparatus and method for transmitting and receiving a signal
Inventor: KUTARAGI KEN
IPC: H04B10/10
Filed: 1999-04-09
Granted: 2000-11-21
Abstract: A method and apparatus for transmitting and receiving a signal. A transmission signal is transmitted from the apparatus at a first intensity level for reception by a receiving device. The apparatus includes a device for receiving a response from the receiving device indicating that the receiving device received the transmission signal. The apparatus further includes a device for re-transmitting the transmission signal at a second intensity level higher than the first intensity level when the response is not received by the apparatus after transmitting the transmission signal at the first intensity level.
Patent TW-374816-B (TW)
Title: Positioning device
Inventor: CHEN YU-LANG
IPC: E06B9/52
Filed: 1999-04-14
Granted: 1999-11-21
Abstract: The present invention relates to a positioning device having on the main body to be bonded by mesh grille 2 convex strips of different convex channels and section spaces than that of the main body, being the convex strips disposed convexly on both sides of the convex channel and, by the flexible pressing strips attached on the mesh grille, the 2 longitudinal sides being engaged onto the 2 convex strips, making the mesh grille be positioned by the flexible stripes onto the main body, for easy installation or disassembly of the mesh grille.
Patent TW-509664-B (TW)
Title: Silica glass crucible for pulling up silicon single crystal and production of the crucible
Inventor: SATO TATSUHIRO
IPC: C30B35/00
Filed: 1999-05-13
Granted: 2002-11-11
Abstract: Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled up but a single crystallization ratio can greatly be improved, and a production method therefore. The quartz glass crucible comprises a crucible base body constituted of a semi-transparent quartz glass layer and a transparent quartz glass layer formed on the inner wail surface of the crucible base body and no expanded bubbles equal to or more than 0.5 mm in diameter are present in a layer 1 mm in depth from an inner surface of the quartz glass crucible after the silicon single crystal is pulled up using the quartz glass crucible.
Patent TW-386063-B (TW)
Title: Method for fixing outlet connector of plastic water tank
Inventor: TZENG YI-YANG
IPC: B65D8/02
Filed: 1999-07-09
Granted: 2000-04-01
Abstract: The present invention relates to a method for fixing the outlet connector of a plastic water tank and is mainly to use a mold to hot melt a substantially conical outlet connector so that the outer annular periphery of the outlet connector is in a hot molten state; mounting the molten outlet connector on a substantially conical outlet of a water tank; extruding the molten plastic on the outer periphery of the outlet connector from a connection portion by a hot-melt molding process so that the molten plastic flows around the outer periphery of the connection portion and fills up the gap between the outlet connector and the outlet of the tank thereby fastening the two and achieving an excellent sealing.
Patent TW-465051-B (TW)
Title: Resin sealed semiconductor device
Inventor: KAWANO KENYA
IPC: H01L21/56
Filed: 1999-11-03
Granted: 2001-11-21
Abstract: This invention relates to resin sealed semiconductor device of LSI chip being connected with a wiring substrate, especially resin sealed semiconductor device of bare chip package. A resin sealed semiconductor device is provided with an organic resin wiring substrate, an LSI chip having a semiconductor integrated circuit and mounted in a bare chip package form to the organic resin wiring substrate through a plurality of electrical bonding members, and a resin filled into a gap portion between the organic resin wiring substrate and the LSI chip. In this resin sealed semiconductor device, a Young's modulus of the resin to be filled, its coefficient of linear thermal expansion and its fillet shape are optimized. The resin filled is also preferably colored in black.
Patent TW-471232-B (TW)
Title: Fixing structure of panel speaker
Inventor: LIN JOHN DUNG-SHIANG
IPC: H04R1/02
Filed: 1999-11-08
Granted: 2002-01-01
Abstract: The invention relates to a fixing structure of panel speaker, used to fasten a panel unit and to generate sound by vibrating the panel unit with a exciter of which forms a panel speaker. It includes a protection structure installed around the panel unit, which is used to protect the panel unit from being hit, and is equipped with a joint part. A fixing setup is installed on the protection structure and is connected with the joint part for fixing the exciter. The fixing setup is independent from the protection structure along with a positioning part to fasten the panel speaker to a playing position. With the fixing structure of the invention, the production cost of the panel speaker can be significantly lowered.
Patent TW-461929-B (TW)
Title: Product and method for improving the strength of lignocellulosic material under humid conditions
Inventor: OWENS BLAIR ALEX
IPC: D21H17/45
Filed: 1999-11-11
Granted: 2001-11-01
Abstract: The strength of lignocellulosic materials is improved by treating them with water-soluble strengthening agents containing sulfonic units, and rendering these agents water-insoluble by reacting them with compounds containing azetidinium rings. Thus, a substantial reduction or elimination of the bleeding of said strengthening agents from the lignocellulosic materials when touched with wet hands or contacted under humid conditions is achieved.
Patent TW-424309-B (TW)
Title: Substrate for multi-chip packaging with non-sticking inspection structure
Inventor: CHEN JIA-YIN
IPC: H01L23/00
Filed: 1999-11-26
Granted: 2001-03-01
Abstract: A substrate for multi-chip packaging with non-sticking inspection structure is disclosed. On the peripheral outside the chip packaging area of multi-chip packaging substrate forms a plurality of non-sticking inspection spots. Those non-sticking inspection spots are formed as electrical connection with a plurality of chip based in the chip packaging area respectively and independently and there are no conductive traces for connection between these chip based.
Patent TW-464982-B (TW)
Title: Plasma etching of polysilicon using fluorinated gas mixtures
Inventor: CHINN JEFFREY D
IPC: H01L21/302
Filed: 1999-12-01
Granted: 2001-11-21
Abstract: A method of etching polysilicon using a fluorinated gas chemistry to provide an etch rate in excess of 10,000 Å/min and a photoresist selectivity of better than 3:1. The method is accomplished using a combination of a fluorinated gas and a fluorocarbon gas, e.g., 50-60 sccm of SF6, 1-40 sccm of CHF3, and 40-50 sccm of O2 with a total chamber pressure of 4-60 mTorr. The power applied to the etch chemistry to produce an etching plasma is 400-1500 watts of inductive source power (at 13.56 MHz) via an inductively coupled antenna and 200-1500 watts (at 12.56 MHz) of cathode bias power applied via a cathode electrode within a wafer support pedestal. The pedestal supporting the wafer was maintained at 0-50 degrees C.
Patent TW-411387-B (TW)
Title: Burner for gas stove
Inventor: SHIGENO HIDEKI
IPC: F23D14/06
Filed: 1999-12-08
Granted: 2000-11-11
Abstract: This invention enhances the flame stability of the burner during weak fire. Deep flame hole grooves 6 and shallow auxiliary flame hole grooves 7 are formed in an annular flame hole groove forming portion 5 of a burner head 1. A plurality of stable flame hole grooves 10 are also formed. The stable flame hole grooves 10 have a width W greater than that of the flame hole grooves 6 and a length L shorter than that thereof, and are communicated with a distribution path 4 by means of two flow-in grooves 12, 12 partitioned by a partitioning wall 11. The burner head 1 is supported in a burner body. By means of the respective grooves that form flame holes with the burner body, very high flames are generated due to the greater width and shorter length of the stable flame hole grooves, and a resisting force is generated at a counter-flame oriented towards a direction f by means of the partitioning wall 11.
Patent TW-592834-B (TW)
Title: Method and apparatus for contacting of gases and solids in fluidized beds
Inventor: RALL RICHARD R
IPC: C10G11/18
Filed: 1999-12-15
Granted: 2004-06-21
Abstract: A gas-solid fluidized bed is formed within a contacting element having pairs of planar portions arranged in intersecting planes, each planar portion being formed by one or more webs and one or more open slots adjacent each web, the webs and slots being arranged such that a web in one of the planar portions intersects a slot in the paired planar portion. The fluidized bed can be catalyst particles fluidized by a gas stream, such as in a catalyst stripper and/or regenerator in an FCC system.
Patent TW-I284642-B (TW)
Title: Novel heterocyclic sulfonamides
Inventor: BREU VOLKER
IPC: A61P11/06
Filed: 2000-01-07
Granted: 2007-08-01
Abstract: The compounds of formula (I), wherein R1, R2 and X have the significance as given in the description, are inhibitors of endothelin receptors and can therefore be used for the treatment of disorders which are associated with abnormal vascular tone and endothelial dysfunction.
Patent TW-439300-B (TW)
Title: Semiconductor device and method for fabricating the same
Inventor: YUKI KOICHIRO
IPC: H01L21/265
Filed: 2000-01-14
Granted: 2001-06-07
Abstract: The present invention provides a semiconductor device which restrains disorder of structure in a hetero interface when heat treatment is performed, in a semiconductor device using a heterojunction containing mixed crystal semiconductor, and a method for fabricating the same. A lower Si cap layer 118 containing C, an I-Si1-yGey layer 119 (0<y<1), an I-Si cap layer 142, an SiO2 layer 117 and a gate electrode 116, are formed on a semiconductor substrate 101. Since C is contained in the lower Si cap layer 118, the movement, diffusion, segregation, etc., of Ge in the Si1-yGey layer 119 are restrained. As a result, disorder in the structure of an Si/Si1-yGey hetero interface 136 is restrained, and a clear and flat interface is maintained, so that characteristics such as conductivity of carriers in a channel along the hetero interface 136 is improved. That is, thermal budget of the semiconductor device, at thermal treatment, is improved. By imparting gradient to C concentration, diffusion of C into a gate insulating film is restrained, and deterioration in reliability and the like is prevented.
Patent TW-I260240-B (TW)
Title: Method for manufacturing hollow fiber membranes
Inventor: CHENG KWOK-SHUN
IPC: B01D71/32
Filed: 2000-01-28
Granted: 2006-08-21
Abstract: A method for producing a filter element of a plurality of hollow fiber membranes made of perfluorinated thermoplastic polymer with a pot or seal made of perfluorinated thermoplastic polymer. A bundle of hollow fiber membranes is prepared with the fibers substantially aligned, with at least one end sealed. The sealed end is placed in a temporary recess made in a molten pool of perfluorinated thermoplastic potting material and held in the molten pool while potting material flows around and up the fibers to form a unified pot after cooling and solidification of the potting material.
Patent TW-429205-B (TW)
Title: Device for delivering articles to workstations
Inventor: WALTHER JOERG
IPC: B25H3/02
Filed: 2000-02-25
Granted: 2001-04-11
Abstract: Disclosed is a device (10, 10', 50) for delivering articles (12) to workstations. The device (10, 10', 50) includes a storage device for storing articles (12) and configured to a vertical container (14, 14', 54). A pick-up device (16, 16', 56) having a clamp tong (18, 18', 58) is connected to vertical container (14, 14', 54'). The vertical container (14, 14', 54) and the pick-up device (15, 16', 56) are designed in such a way that they can be releasably engaged to one another. The pick-up device (16, 16', 56) may be provided at a front side (36, 40, 70, 110) of the vertical container. As such, the stored volume of the device (10, 10', 50) can be greatly varied using a minimum number of components.
Patent TW-521336-B (TW)
Title: Resist stripping composition and process for stripping resist
Inventor: FUKUDA HIDEKI
IPC: C09K3/00
Filed: 2000-03-02
Granted: 2003-02-21
Abstract: An aqueous resist stripping composition contains (a) an oxidizing agent, (b) a chelating agent, (c) a water-soluble fluorine compound, and optionally (d) an organic solvent. Also provided is a process of stripping resist films and resist residues remaining after etching treatment utilizing the aqueous resist stripping composition. In the process, corrosion of semiconductor materials, circuit-forming materials, insulating films, etc. is minimized and the rinsing is sufficiently made with only water without needing organic solvent such as alcohol.
Patent TW-448460-B (TW)
Title: AC-type plasma display panel
Inventor: SHINO TAICHI
IPC: H01J11/12
Filed: 2000-03-20
Granted: 2001-08-01
Abstract: The present invention provides an AC-type plasma display panel for eliminating the non-uniform display brightness and fault display occurrence. A first insulation substrate and a second insulation substrate are configured in opposite. A plurality sets of scanning/sustaining electrode groups are configured with scanning electrodes and sustaining electrodes configured in parallel. A dielectric covers on the scanning/sustaining groups. A plurality of data electrodes are configured in opposite and vertical crossed relation with the scanning electrode and the sustaining electrode. By the mutual discharging between the scanning electrode and the sustaining electrode, the lighting of fluorescence is composed. The set of scanning electrode and sustaining electrode are composed of the scanning electrode with the sustaining electrode in neighbored configuration respectively by one unit, and, the sets are separated from each other.