baber/WOPTO huggingface dataset:
Patent TW-432513-B (TW)
Title: Method of forming gate electrode in semiconductor device
Inventor: YEO IN-SEOK
IPC: H01L29/49
Filed: 1999-12-07
Granted: 2001-05-01
Abstract: A method of forming a gate electrode in a semiconductor device which can effectively prevent abnormal oxidation of a metal layer without occurring thermal budget and the deterioration of a gate insulating layer during gate re-oxidation process, is disclosed. In the present invention, one selected from a group consisting of an iridium (Ir) layer, a ruthenium (Ru) layer and an osmium (Os) layer capable of forming a nonvolatile conductive metal oxide layer, is used as a metal layer of a gate electrode instead of a W layer in conventional art. Therefore, although a gate re-oxidation process is performed by a well known method, it is effectively prevented that the metal layer is abnormally oxidized, thereby forming an uniform oxide layer on the side wall of the gate. Furthermore, since the oxide layer is conductive, the resistivity of the gate electrode is reduced.
Patent TW-471184-B (TW)
Title: Wide band gap LED structure
Inventor: JIAN FENG-REN
IPC: H01L33/00
Filed: 1999-12-24
Granted: 2002-01-01
Abstract: A GaN series of III-V compound semiconductor device is disclosed, which comprises a semiconductor stack layer, this stack layer is used to fabricate the P-type Ohmic contact electrode having low resistance. The semiconductor stack layer is grown on the P-GaN series of III-V compound semiconductor, and it is a multi-digital GaN/GaP buffer layer. A P-GaP contact layer is on top of the semiconductor stack layer. The other purpose of the present invention is to provide a P-Ga(N, P) linear gradual composition buffer layer on the P-GaN series of III-V compound semiconductor, then grow a P-GaP on this buffer layer to form P-type Ohmic contact electrode with AuBe, AuZn or other metal. Another purpose of the present invention is to provide a P-GaP to form a P-type Ohmic contact electrode with AuBe, AuZn or other metal on the P-GaN series of III-V compound semiconductor.
Patent TW-495763-B (TW)
Title: Hierarchical prefetch for semiconductor memories
Inventor: JI BRIAN
IPC: G11C7/10
Filed: 2000-04-26
Granted: 2002-07-21
Abstract: A semiconductor memory in accordance. With the present invention includes a data path including a plurality of hierarchical stages, each stage including a bit data rate which is different from the other stages. At least two prefetch circuits are disposed between the stages. The at least two prefetch circuits include at least two latches for receiving data bits and storing the data bits until a next stage in the hierarchy is capable of receiving the data bits. The at least two prefetch circuits are coupled between stages such that an overall data rate per stage between stages are substantially equal. Control signals control the at least two latches such that prefetch circuits maintain the overall data rate between the stages.
Patent TW-477748-B (TW)
Title: Feeding paper system having taking paper and distributing paper mechanism
Inventor: KUO YING-HSIEN
IPC: B65H3/34
Filed: 2000-02-18
Granted: 2002-03-01
Abstract: The present invention provides a kind of feeding paper system that includes a housing, a paper storage cartridge, a sending paper channel installed at the outside of the paper storage cartridge, a taking paper mechanism installed on top of the paper storage cartridge, a distributing paper, and a driving apparatus. The taking paper mechanism contains a taking-paper rotating-arm and a taking-paper rolling-wheel. The taking-paper rotating arm contains a fixed axle, which is fixed inside the housing through a rotatable means, and a swinging terminal, which can stretch into or be far away from the paper storage cartridge. The taking-paper rolling wheel is fixed at the swinging terminal through a rotatable means. When the swinging terminal stretches into the paper storage cartridge, the taking-paper rolling wheel, by using a rotatable means, can send paper stored in the paper storage cartridge into the sending-paper channel through the front terminal of the paper storage cartridge. The distributing paper mechanism contains a paper-distribution rolling wheel and a paper-distribution friction sheet installed at the upper and the lower sides of the sending paper channel, respectively. When two pieces of papers enter between the paper-distribution rolling wheel and the paper-distribution friction sheet, the paper-distribution rolling wheel continuously pushes forward the upper side paper. The driving apparatus is used to drive the taking-paper rotating arm, the taking-paper rolling wheel and the paper-distribution rolling wheel. When the driving apparatus works, the swinging terminal will stretch into the paper storage cartridge and the taking-paper rolling wheel will start to rotate so as to make papers inside the paper storage cartridge enter the sending paper channel, in which the paper-distribution rolling wheel continuously pushes forwards papers to make them pass through the sending paper channel.
Patent TW-548573-B (TW)
Title: Dual axis articulated computer input device
Inventor: HAN ALLEN
IPC: A63F13/06
Filed: 2000-07-04
Granted: 2003-08-21
Abstract: The present invention provides a dual axis articulated computer input device. Position sensors are configured to provide position information indicative of a position of two handle members relative to one another.
Patent TW-449910-B (TW)
Title: Manufacturing method of DRAM
Inventor: YANG YU-RU
IPC: H01L27/108
Filed: 2000-04-01
Granted: 2001-08-11
Abstract: A manufacturing method of DRAM is disclosed, which is briefly described as follows: first, provide a substrate, form a source/drain region in this substrate, form a dielectric layer on it. Then, form a mask layer on the dielectric layer, and form a node contact opening penetrating the mask layer and dielectric layer in the mask layer and dielectric layer, wherein the node contact opening exposes portions of the source/drain region. Then, form the first conductive layer on the substrate, this first conductive layer fills the node contact opening. Next, define the first conductive layer to form a lower electrode. Then, form a capacitive dielectric film layer and the second conductive layer on the substrate.
Patent TW-475060-B (TW)
Title: Method and device for measuring ion density in liquid crystal panel
Inventor: SASAKI NORINAGA
IPC: G01N21/00
Filed: 2000-04-05
Granted: 2002-02-01
Abstract: To measure the ion density in a liquid crystal display panel by a nondestructive method and to know the distribution of ion density in a liquid crystal display panel Flickers are observed by applying square waves of the frequency as low as 1 Hz (step S303). The amplitude of the observed flickers is measured (step S308). The ion density in the liquid crystal panel is calculated from the calibration curve preliminarily obtained (which shows the correlation between the amplitude or area of flickers and the ion density) (step S307).
Patent TW-470660-B (TW)
Title: Method to augment blood circulation in a limb
Inventor: WATSON KRISTIN L
IPC: A61H23/04
Filed: 2000-04-25
Granted: 2002-01-01
Abstract: A method for augmenting blood circulation in the limb of a patient is provided by customizing the compression cycle based upon patient venous characteristics. The method measures the venous refill time of the patient for use with an intermittent pneumatic compression device. A limb such as a leg is wrappped with a compression device. A limb such as a leg is wrapped with a compression sleeve having at least one pressurizable chamber. The chamber is pressurized for a predetermined period of time to compress the limb and cause blood to flow out of the limb. The chamber is depressurized until the pressure in the chamber reaches a lower value, and the chamber is closed The pressure in the chamber is sensed and the venous refill time, the time for the limb to refill with blood, is determined by sensing when the pressure reaches or will reach a plateau. The venous refill time is used as the basis for the time between subsequent compression pulses of the compression device.
Patent TW-470956-B (TW)
Title: Semiconductor device
Inventor: KONO TAKASHI
IPC: G11C5/14
Filed: 2000-05-09
Granted: 2002-01-01
Abstract: In the present semiconductor integrated circuit device, a buffer is provided between a constant-current source circuit and an internal circuit that becomes a source of noise. The buffer controls the potential of an output node such that the potential of the output node becomes the bias potential. Even when noise is generated on the bias potential line when the internal circuit is in operation, the buffer dampens the noise. Thus, the noise generated in the internal circuit is prevented from adversely affecting the constant-current source circuit, and a stable operation of the internal circuit itself is achieved.
Patent TW-455979-B (TW)
Title: Improvement of cassette carrier structure for improving cleaning process of wafer
Inventor: CHIOU JENG-TZUNG
IPC: H01L21/673
Filed: 2000-05-18
Granted: 2001-09-21
Abstract: The present invention discloses a kind of improvement of cassette carrier structure for improving the cleaning process of wafer. The carrier includes a support frame, which is used for providing the support of a machine arm, and two hanging portions opposite to each other on both sides of the support frame. The hanging portion has a fixed mechanism for providing the suspension of terminal edge portion. The present invention simplifies the carrier structure of carrying cassette so as to decrease the amount of chemicals adsorbed and remained on the carrier surface during the process of dipping wafers. Therefore, dipping time of wafers is shortened and the efficiency of cleaning wafers is increased.
Patent TW-464941-B (TW)
Title: Semiconductor device and production method thereof
Inventor: HOSHINO AKIRA
IPC: H01L21/3205
Filed: 2000-05-24
Granted: 2001-11-21
Abstract: An insulation layer 12 is formed on a semiconductor substrate 11 and has a groove 12a for formation of a wiring layer 15 in a predetermined region. A barrier metal is formed on an inner wall of the groove 12a and prevents diffusion of atoms constituting the wiring layer 15, into the insulation layer 12. A seed layer 14 is formed on the barrier metal 13 formed at the bottom of the groove 12a and serves as a kernel of crystal growth when forming the wiring layer 15. The seed layer has crystal orientation of (1 1 1) as a dominant. The wiring layer is formed to bury the groove 12a. Moreover, the wiring layer has crystal orientation of (1 1 1) as a dominant, which suppresses electromigration.
Patent TW-527417-B (TW)
Title: Double-fired horizontal tube heater
Inventor: WORMAN DONALD D
IPC: F27B5/14
Filed: 2000-08-31
Granted: 2003-04-11
Abstract: A heater includes a radiant section having a wall and a roof, the roof having a longitudinal opening. A radiant heat exchange tube is disposed in the radiant section, and the tube has an inlet and outlet through which a process fluid can be carried respectively into and out of the radiant section. The tube between the inlet and outlet is arranged in generally horizontal tube lengths. A plurality of burners is provided, at least two of the burners being disposed on opposing sides of the tube. A plurality of tube supports is releasably positioned at longitudinal intervals along the tube lengths and define tube seats on which the tube lengths rest. The tube and tube supports are liftable as a unit through the longitudinal opening of the roof of the radiant section.
Patent TW-I257414-B (TW)
Title: Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices
Inventor: MOTONARI MASAYUKI
IPC: H01L21/304
Filed: 2000-09-05
Granted: 2006-07-01
Abstract: The present invention provides an aqueous dispersion composition for chemical mechanical polishing which is useful for the manufacture of semiconductor devices, and which for polishing of different types of working films and barrier metal layers formed on semiconductor substrates, can achieve efficient polishing particularly of barrier metal surfaces and can give adequately flattened and high precision finished surfaces. The aqueous dispersion composition for chemical mechanical polishing has properties such that, when polishing a copper film, a tantalum layer and/or tantalum nitride layer and an insulating film under the same conditions, the ratio (Rcu/Rta) between the polishing rate of the copper film (Rcu) and the polishing rate of the tantalum layer and/or tantalum nitride layer (Rta) is no greater than 1/20, and the ratio (Rcu/Rin) between the polishing rate of the copper film (Rcu) and the polishing rate of the insulating film (Rin) is from 5 to 1/5. Rcu/Rta is preferably no greater than 1/30, especially no greater than 1/40 and most preferably no greater than 1/50, while Rcu/Rin is preferably 4-1/4, especially 3-1/3 and more preferably 2-1/2.
Patent TW-480508-B (TW)
Title: Multi-direction input device
Inventor: NAKAMURA MASAHIKO
IPC: H01H25/04
Filed: 2000-10-05
Granted: 2002-03-21
Abstract: The invention is provided to control the total height of a multi-direction input device called joystick. As shown in Fig. 2, projecting operation parts 42A and 42B are mounted downward or upward on a pair of rotating members 40A and 40B at the center in the axial direction for operating the upper and lower rotating members 40A and 40B. An elevating slider 50 and a spring 60 for holding the rotating members 40A and 40B at the neutral positions are disposed on the periphery of the operation parts 42A and 42B on the side to which the operation parts 42A and 42B project. A support part 32 with a large diameter is mounted on the side opposite to the side to which the operation parts 42A and 42B project in a part in the axial direction of an operation member 30 for rotatably supporting the operation member 30. The centers of rotation of the operation member 30 and the rotating members 40A and 40B are located in a upper part or lower part in a housing 10, and the elevating slider 50 and the spring 60 are efficiently stored in the lower space or in the upper space.
Patent TW-589392-B (TW)
Title: Ionization film-forming method and apparatus
Inventor: YAMAGUCHI HIROHITO
IPC: C23C14/35
Filed: 2000-11-29
Granted: 2004-06-01
Abstract: The present invention provides a film forming method comprising the steps of ionizing sputtering particles and applying a periodically changing voltage to an electrode near a substrate, wherein a time for applying a voltage equal to or higher than an intermediate value between maximum and minimum values of the periodically changing voltage is shorter than a time for applying a voltage equal to or less than the intermediate value, and a film forming apparatus for carrying out the above method.
Patent TW-I222011-B (TW)
Title: Memory shared between processing threads
Inventor: WOLRICH GILBERT
IPC: G06F9/30
Filed: 2001-01-03
Granted: 2004-10-11
Abstract: A method includes pushing a datum onto a stack by a first processor and popping the datum off the stack by a second processor.
Patent TW-I289591-B (TW)
Title: Adhesive film for semiconductor, lead frame attached with adhesive film for semiconductor and semiconductor device using the same
Inventor: TANABE YOSHIYUKI
IPC: C09J7/35
Filed: 2001-01-18
Granted: 2007-11-11
Abstract: An adhesive film for semiconductor, which has a three-layer structure consisting of a support film having each face coated with an adhesive layer, each adhesive layer containing (A) a heat resistant thermoplastic resin having a glass transition temperature of 130 to 300 DEG C, a water absorption of 3% by weight or less and a squeeze length of 2 mm or less, (B) an epoxy resin and (C) a trisphenol compound as an epoxy resin-curing agent; a lead frame with adhesive film; and a semiconductor device wherein the lead frame with adhesive film is bonded to a semiconductor element.
Patent TW-494594-B (TW)
Title: Closed alkaline battery
Inventor: INOUE HIROYUKI
IPC: H01M10/28
Filed: 2001-03-09
Granted: 2002-07-11
Abstract: The present invention relates to a type of closed alkaline battery consisting of a safety valve (60A) disposed on the venting hole (42A) of the closing plate (40A) and a closing unit (80A) formed of a positive cap (70A) accommodating the safety valve (60A) in compressed condition between the closing plate (40A). The safety valve (60A) is used for closing the gas escape hole (42A). The safety valve (60A) comprises a valve plate (62A) and a spring (64A). The valve plate (62A) is used for closing the gas escape hole (42A). The spring (64A) presses the valve plate (62A) towards the gas escape hole (42A) to make the length-displacement compression duty ratio below 50 N/mm.
Patent TW-483795-B (TW)
Title: Dynamic feed control optimization system for CNC machining
Inventor: ALLEN WILLIAM D
IPC: G05B19/416
Filed: 2001-05-25
Granted: 2002-04-21
Abstract: Control of a CNC machine is interfaced with an IBM compatible personal computer (PC) to make information relative to the block number, feed-rate and/or spindle speed over-ride values available at the personal computer. If the CNC Control has been re-configured properly (with regard to the ladder interface and operating system) a PC computer is not required. During the machining of a part the machine operator will manually over-ride the feed-rate and/or the spindle speed to optimize machining performance. Through the use of visual basic or C++ programming modules and routines, the spindle speed and feed-rate controls (located at the CNC control) are polled at frequent or 500 ms intervals. The status or over-ridden values of these controls are correlated to the active block number in use during each polled sequence and this information is written to an ""event file"". After the subject part has been completed, one of two options can be used. An ""edit phase"" is initiated which utilizes the information in the ""event file"" to reconstruct the MCD file. After the edit phase is complete, the resultant output ""optimized MCD"" can be used to produce like parts with confidence that all motion is running at peak performance and all programmed trajectories are maintained. The cycle can be repeated again (if desired) to ensure even greater efficiency while cutting. In the alternative, the event file can be employed to ""command"" the CNC Control with respect to feed-rate and/or spindle speed over-ride settings.
Patent TW-I250926-B (TW)
Title: Process for producing thermoplastic resin composition
Inventor: MAEDA MITSUO
IPC: B29C48/57
Filed: 2001-04-25
Granted: 2006-03-11
Abstract: Provided is a process for producing a thermoplastic resin composition of low specific gravity containing hollow spheres by a melt processing extrusion method, wherein a melt-kneading extruder equipped with a screw is used and the extruder has an upper stream side supplying portion at the upper stream part of the extrusion direction, and a lower stream side supplying portion at the lower stream part from said upper stream side supplying portion, and the ratio (L/D) of the distance (L) between said upper stream side supplying portion and said lower stream side supplying portion to the diameter (D) of a screw is 4-30 (L and D are the same scale units); and under screw rotation, a thermoplastic resin having a specific gravity of 1.10 or more is supplied from the upper stream side supplying portion, and hollow spheres in an amount of 2-50 parts by weight based on 100 parts by weight of the thermoplastic resin are supplied from the lower stream side supplying portion.
Patent TW-564303-B (TW)
Title: Generator structure for use in absorbing/expanding type refrigeration device
Inventor: BAI HAU
IPC: F25B15/04
Filed: 2001-05-18
Granted: 2003-12-01
Abstract: The present invention provides a generator structure for use in an absorbing/expanding type refrigeration device, comprising a heating device, a double-layered tube arranged in the heating device and a heat transfer tube arranged between inner and outer tube of the double-layered tube. The inner tube of the double-layered tube serves as a conduit for concentrated ammonia aqueous solution, while the outer tube is a conduit for thin ammonia aqueous solution. As such, the heating device heats the double-layered tube to cause the concentrated ammonia aqueous solution inside the inner tube to release ammonia gas, forming bubbled stream, due to the heating. The heat transfer tube reduces the thermal resistance between the inner and outer tubes thereby reducing the temperature for initiation of bubbles in the generator.
Patent TW-583554-B (TW)
Title: Safety-data-processing unit and its method
Inventor: MAY CHRISTIAN
IPC: G06F21/55
Filed: 2001-06-11
Granted: 2004-04-11
Abstract: This invention relates to a safe data-processing unit and its method with a data-/program-command memory (1) to store the data/program-command, a command-line (2) with many function-stages (I to V) to process the data/program-command, and a control-unit (3) to control the function-stages (I to V). An empty-function-generator (4, 4', 4"") generates randomly the empty-functions in the data-processing unit, thus an eavesdrop-attach by means of the analysis of the leak-information becomes much difficult or can be prevented.
Patent TW-I245122-B (TW)
Title: Temperature measurement method and device with voltage variation compensation
Inventor: LIN PETER
IPC: G01K7/01
Filed: 2001-06-29
Granted: 2005-12-11
Abstract: The present invention relates to a temperature measurement method and device with voltage variation compensation, and more particularly to a method and device for solving the temperature deviation caused by power voltage variation. The present invention is to provide a temperature measurement method and device with voltage variation compensation effect, in which the temperature input and the reference voltage input are floated in accordance with the power voltage variation, so as to eliminate or reduce the voltage error caused by the voltage variation between the two inputs.
Patent TW-543021-B (TW)
Title: Source driver for liquid crystal display element
Inventor: YOUN KYUNG-UN
IPC: G09G3/36
Filed: 2001-06-29
Granted: 2003-07-21
Abstract: The disclosure provides a source driver for liquid crystal display element for greatly decreasing an occupied area of a digital/analog converter in each channel to achieve a preferred LCD source driver with a minimized chip size and a reduced cost. In the source driver for liquid crystal display element having a dummy channel, a first channel, and a second channel, comprises said dummy channel including a first digital/analog converter for responding a first digital and outputting a first polarity of an analog signal; said first channel including an input selecting means, a second digital/analog converter, and a first output selecting means, wherein said input selecting means responds to a control signal and selectively inputs one of said first digital signal and said second digital signal, said second digital/analog converter responds to said input selecting means and outputs a second polarity of the analog signal, and said first output selecting means responds to said control signal and selectively outputs one of an output signal of said first digital/analog converter and an output signal of said second digital/analog converter; and said second channel including a third digital/analog converter and a second output selecting means, wherein said third digital/analog converter responds to said second digital signal and outputs said first polarity of the analog signal, and said second output selecting means responds said control signal and selectively outputs one of an output signal of said second digital/analog converter and an output signal of said third digital/analog converter.