Patent GB-750328-A (GB)
Title: Improvements in or relating to gamma ray thickness gauges
Inventor: PUTMAN JOHN LABAN
IPC: G01N23/203
Filed: 1953-06-24
Abstract: 750,328. Gamma - ray thickness gauge. UNITED KINGDOM ATOMIC ENERGY AUTHORITY. June 2, 1954 [June 24, 1953]. No. 17448/53. Class 40 (3). A thickness gauge comprises a source of gamma radiation and a gamma ray detector which gives pulses, the amplitude of which corresponds to the energy of the incident ray. Source and detector are mounted so that the source may be placed close to the surface of the article to be gauged with the detector exposed to direct radiation from the source and to radiation back scattered through the surface. A single amplitude channel pulse analyser is provided which rejects pulses from the detector caused by direct excitation by the source, together with means to indicate the count rate of the remaining pulses caused by backscatter radiation from the material. Fixed to photo-multiplier casing 4a is a box 2a, containing a sodium iodide crystal and having side extensions 2b carrying a wire of e.g. Co 60 held in a groove in brass rod 13 by the brass sleeve 14. Frame 15 in which the box is carried has Y-shaped side members between the extremities of which are held aluminium rods 16 which rest on the member being gauged. In operation the frame is placed on the member and box 2a, which is slidable vertically in frame 15 is pushed down against the tension of a spring until the sleeve 14 contacts the member which may be e.g. a tube. The output of the photo-multiplier, which responds to scintillations produced in the Na I crystal, consists of voltage pulses as shown in Fig. 2. The pulses relevant to thickness measurement are those caused by gamma-rays back-scattered by-the material, and represented in Fig. 2 by peak 9 rising from background plateau 7, the height of which is proportional to the source strength, due to Compton recoil electrons generated in the space between source and crystal. The linearly amplified pulses from the photomultiplier are fed to two univibrators V1, V2 in parallel, the outputs of which are applied respectively to the grids of the two cathode coupled halves of V3. The input grid of univibrator V is biased so that negative pulses of amplitude above the lower limit A shown in Fig. 2 trigger it into its unstable state for a period determined by the time constant of the circuit to yield positive pulses of fixed length which are fed through R32 to V3 which gives corresponding negative output pulses at its anode. However, the bias of the second univibrator which has a somewhat longer time constant is adjusted by potentiometer VR2 so that pulses of amplitude above the upper limit B shown in Fig. 2 trigger it also to give positive pulses to the other grid of V3 which through the cathode coupling hold the first half of the valve cut off for the duration of the pulses. Consequently output pulses are obtained at the first anode of V3 only for pulses caused by back-scattered gamma-rays and Compton recoil electrons. The selected pulses are fed to diode pumps MR1, MR2 feeding the tank circuit R49, C14, C15. The output voltage of the tank circuit which is proportional to count rate is amplified in fed-back amplifier V4 which is resistance coupled to cathode follower amplifier V5A. The voltage at the cathode of V5A is representative of the total count rate of pulses, and so that meter MA between the cathodes of V5A, V5B gives a reading proportional to thickness, a backing off potential representative of the Compton electron count rate is derived from the cathode of V5B. With the photomultiplier disconnected and switch S1/1 in position A, VR5 is adjusted to set the reading of MA at zero to compensate for circuit noise. The photo-multiplier which is held clear of the material surface is then connected and the output of V3 set by adjustment of VR9 so that the meter gives a predetermined reading in response to the recoil electron count rate independently of the strength of the source. The bias which is applied through S1/2 to the grid of VR5 in the lower range position B (0-“ inch) is such that the backing off potential balances the potential of the V5A cathode. Since the sensitivity has been set by adjustment of VR9 to be inversely proportional to the Compton count rate the reading of MA in this range position is proportional to the ratio of backscatter rate to Compton count rate and therefore proportional to thickness. Position C of switch S1/1 is a second range position.