baber/WOPTO huggingface dataset:
Patent TW-330169-B (TW)
Title: A method of tightening threaded members
Inventor: OUMI TADAHIRO
IPC: H01L21/02
Filed: 1997-04-08
Granted: 1998-04-21
Abstract: A method of tightening threaded members, which comprises tightening a plurality of threaded members by a driving device, which is characterized in that: the tightening amount of each threaded member and the tightening torque thereof are detected while the tightening is proceeding, the tightening shall be stopped when all of the tightening amount of the threaded members falls within the value of the predetermined extent, the tightening shall be determined as normal when the tightening torque of each threaded member is within the predetermined extent and the torque difference of the threaded members falls within the predetermined extent.
Patent TW-462140-B (TW)
Title: A multiple-powersupply traction system, and a method of implementing it
Inventor: MAI SERGE
IPC: H02M7/12
Filed: 1997-05-02
Granted: 2001-11-01
Abstract: The present invention relates to a multiple-powersupply traction system capable of operating under a single-phase AC power supply and under a DC power supply, the system is characterized in that a common set of capacitors (7, 10) is used when operating under either kind of power supply. The present invention also relates to a method of implementing such a multiple-powersupply traction system.
Patent TW-445251-B (TW)
Title: Substituted indanylidineacetylguanidines, process for their preparation, their use as medicaments or diagnostic and medicaments containing them
Inventor: RAMAKRISHNA NIROGI VENKATA SAT
IPC: A61K31/00
Filed: 1997-05-23
Granted: 2001-07-11
Abstract: Substituted indanylidineacetylguanidines, process for their preparation, their use as medicaments or diagnostic and medicaments containing them: indanylidineacetylguanidines I and their pharmaceutically acceptable salts wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10 and X have the meanings given in the claims, are effective inhibitors of the cellular sodium/proton antiport (Na<SP>+</SP>/H<SP>+</SP> exchanger), which, in numerous diseases (essential hypertension, atherosclerosis, diabetes and the like) is also increased in those cells which are readily accessible for measurements, such as, for example, in erythrocytes, platelets or leukocytes. They are also advantageous for the preparation of a medicament for the treatment or prophylaxis of disorders of lipid metabolism.
Patent TW-324803-B (TW)
Title: Rob bit compensation system and method associated with a receiver or codec
Inventor: BETTS WILLIAMLEWIS
IPC: H04J3/12
Filed: 1997-06-04
Granted: 1998-01-11
Abstract: A system improving the accuracy of digital signals received from and transmitted to a digital network comprises: (1) Receiving mechanism for receiving digital data from the digital network; (2) Detecting mechanism for detecting digital data frame with rob bit; (3) Modifying mechanism for modifying the frame so as to decrease error associated with the frame and resulted from the rob bit.
Patent TW-355802-B (TW)
Title: A DC transformer/reactor
Inventor: LEIJON MATS
IPC: H01F27/00
Filed: 1997-06-10
Granted: 1999-04-11
Abstract: A DC transformer/reactor comprising a magnetic circuit, wherein the magnetic circuit comprises a magnetic core and at least one winding; the winding comprises at least one current-carrying conductor; each winding comprises also an insulation system, which comprises on the one hand at least two semiconducting layers, wherein each layer constitutes sustantially an equipotential surface, and on the other hand between them is arranged a solid insulation.
Patent TW-355825-B (TW)
Title: Method and apparatus for measuring etch uniformity of a semiconductor wafer
Inventor: BUIE MELISA J
IPC: C23F4/00
Filed: 1997-06-26
Granted: 1999-04-11
Abstract: A method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system; specifically, the apparatus and concomitant method analyzes optical emission spectroscopy (OES) data produced by and OES system; the analysis computes the first derivative of the OES data as the data is acquired; when the data meets a particular trigger criterion, the value of the first derivative is correlated with a particular uniform value; as such, the system produces a uniformity value for a semiconductor wafer using in situ measurement technique.
Patent TW-328612-B (TW)
Title: Automatic semiconductor element manufacturing process equipment
Inventor: SONQ BIING-MING
IPC: H01L21/02
Filed: 1997-07-03
Granted: 1998-03-21
Abstract: Production equipment that can prevent semiconductor wafers from artificial contamination during process include: a closed building; an operation room, located in the closed building, enclosed by side walls each of which has multiple openings and a tool for keeping the environment inside the operation room clean; a plurality of passages connected to the operation room, where each passage is connected to at least one opening of the operation room; tools for keeping the environment in the passages clean, making the environment in the passages cleaner than that in the operation room; manufacturing process tools located inside or near the passages; automatic transporting vehicles, located in the passages, for transporting wafers from one manufacturing apparatus to another apparatus through the openings; measurement and testing equipment located in the operation room; a material handling system, located in the operation room, for receiving wafers from and conveying wafers to automatic transporting vehicles through the openings, and conveying wafers to the measurement and testing equipment; and computer system for controlling and assembling operation procedures of manufacturing equipment such as the automatic transporting vehicles and the automatic material handling system.
Patent TW-330322-B (TW)
Title: The method for determining the voltage sampling of ring oscillator frequency
Inventor: LIN SHYI-TSONG
IPC: G01R31/28
Filed: 1997-08-20
Granted: 1998-04-21
Abstract: A method for determining the voltage sampling of ring oscillator frequency parametric tester. In which, a ring oscillator frequency is transferred into 1st timing signal with low-frequency oscillating frequency. By parametric tester to cyclically proceed sampling for 1st timing signal within a sampling time, then continuously generate plurality 1st voltage sampling value. This voltage-sampling value includes a 1st & 2nd inter-level sampling value, and between 1st & 2nd inter-level sampling value includes 1st sampling value. And the sampling time includes a delay time and a integral time. The method includes: a. Use 1st inter-level sampling value, integral time and 1st timing signal to get 1st pulse transferring correction time; b. Use 2nd inter-level sampling value, integral time and 2nd timing signal to get 2nd pulse transferring correction time; c. Calculate the numbers of 1st sampling value changed from high level to low level and the numbers from low level to high level to get total numbers of level changed; d. By the sampling interval that is from 1st inter-level sampling value to 2nd inter-level sampling value, 1st pulse transferring correction time and 2nd pulse transferring correction time to get inter-level interval time; e. By total numbers of level-changed and inter-level interval time to get oscillating frequency of 1st timing signal; f. By oscillating frequency of 1st timing signal to get frequency of ring oscillator.
Patent TW-343364-B (TW)
Title: Process for producing twin gate oxide elements
Inventor: JOU JYH-WEN
IPC: H01L21/8234
Filed: 1997-09-26
Granted: 1998-10-21
Abstract: A process for producing a twin gate oxide element, through which twin gate oxides of different thickness are formed on a substrate defined with a first element region and a second element region, the method comprising the following steps: (a) forming a first gate oxide on the substrate; (b) depositing a silicon nitride layer on the first gate oxide; (c) covering the silicon nitride layer with a photoresist; (d) removing the photoresist by a mask definition, and etching the silicon nitride layer thereby exposing the first gate oxide in the second element region; (e) growing a thermal oxidation layer on the first gate oxide on the second element region, the first gate oxide plus the thermal oxidation layer forming a second gate oxide; and (f) removing the silicon nitride layer on the first element region.
Patent TW-347425-B (TW)
Title: Process for coating a fire proofing layer on a steel structure
Inventor: FERNG SHEAU-JUANQ
IPC: E04B1/94
Filed: 1997-11-06
Granted: 1998-12-11
Abstract: A process for coating a fire proofing layer on a steel structure, which comprises the following steps: (a) mixing a fire proofing material, water and a latex at a ratio of 2:1:1 into a mixture, spray coating the mixture on the surface of a steel material thereby, after drying, forming a fire proofing key layer in a sturdy granular configuration; (b) applying a first fire proofing layer with an appropriate thickness on the key layer, while combining the first fire proofing layer to the key layer into a good adhesion status; (c) fastening the first fire proofing layer with a woven net having an outer layer of a plastic material and an inner layer of a metal wire; and (d) applying a second fire proofing layer on the surface of the first fire proofing layer such that the second fire proofing layer combines with the PVC woven net and the first fire proofing layer thereby forming a good fire proofing layer with reinforcing functions.
Patent TW-408252-B (TW)
Title: Toner for development of electrostatically charged image containing polyolefin resin having cyclic structure
Inventor: NISHIOKA HISAMI
IPC: G03G9/087
Filed: 1998-03-11
Granted: 2000-10-11
Abstract: A toner for development of an electrostatically charged image, said toner comprising a binder resin, a colorant, a function imparting agent, and a charge control agent, wherein said binder resin at least contains a polyolefin resin having a cyclic structure, said polyolefin resin is composed of a resin or resin fraction having a number average molecular weight (Mn), as measured by GPC, of less than 7,500 and a resin or resin fraction having said number average molecular weight of 7,500 or more, and in said polyolefin resin having a cyclic structure, a resin or resin fraction having an intrinsic viscosity (i.v.) of 0.25 dl/g or more, and a number average molecular weight (Mn) of 7,500 or more and a weight average molecular weight (Mw) of 15,000 or more, as measured by the GPC method, is contained in a proportion of less than 50% by weight based on the entire binder resin.
Patent TW-370692-B (TW)
Title: Method for controlling etching depth of silicon dioxide
Inventor: Zhang yi-qun
IPC: H01L21/311
Filed: 1998-01-09
Granted: 1999-09-21
Abstract: A method for controlling etching depth of silicon dioxide is provided, which covers silicon dioxide material on a semiconductor substrate; proceeds etching reaction for silicon dioxide material with plasma etching technique; uses a gas mixture of Ar, CO, C4F8 and CF4 as etching reaction gases wherein the effect of CF4 gas is to etch silicon dioxide material; controls the mass flow rate of CF4 gas to change etch depth of silicon dioxide material.
Patent TW-399343-B (TW)
Title: A laser diode of the type having a buried heterostructure
Inventor: STOLTZ BJOERN
IPC: H01S5/323
Filed: 1998-02-12
Granted: 2000-07-21
Abstract: In a semiconductor laser of the BH-type comprising a lateral current blocking structure which is constituted of an n-p-n-p- or n-SI-n-p-sequence of layers (5, 9, 11, 3), located on both sides of a buried active region, one or more thin layers (13, 15) are inserted between the second n-doped layer and the second p-doped layer.  The thin, extra layers (11, 13) are p-doped and consist of alternatingly materials having a high bandgap and a low bandgap.  These thin layers provide a larger forward voltage drop at moderate high current densities and thereby give a better current confinement in the laser, what in turn gives a higher optical output power and a smaller deviation of the output power/current characteristic thereof from a linear behaviour.
Patent TW-394897-B (TW)
Title: A backup method of BIOS setup
Inventor: LI FU-REN
IPC: G06F9/06
Filed: 1998-02-19
Granted: 2000-06-21
Abstract: This is a backup method of BIOS setup data that adds a backup program in BIOS program. It uses the EEPROM spare space to store BIOS program for the initial setup data stored in RAM. Whether the BIOS setup data stored in RAM and the backup data stored in EEPROM are effective and the same is determined whenever the machine boots up. If they are effective but not the same, the BIOS setup data in RAM will be copied into EEPROM; And the data in RAM are lost the backup data in EEPROM will be copied in to RAM. By nonvolatile EEPROM, RAM can prevent the abnormal battery from losing data and can prevent the damage from start failure.
Patent TW-397965-B (TW)
Title: Pixel circuits, display devices and electronic instruments with current-driven light-emitting elements
Inventor: KIMURA MATSUMI
IPC: G09G3/32
Filed: 1998-03-09
Granted: 2000-07-11
Abstract: A display apparatus 100 is provided with a current driving type light-emitting device 224 and a driving device 223 for controlling a driving current flowing through the light-emitting device for each pixel. The display apparatus comprises power source units 13, 14 for supplying power for causing a driving current to flow via the driving device to the light-emitting device via a power source wire and signal wire driving units 11, 12 for supplying a data signal to the driving device via signal wires 131, 132. In addition, voltage adjusting units 16-23 adjust a voltage from a power source from the power source units or a data signal from the signal wire driving unit so that a quantity of current of a driving current flowing through the light-emitting device in such a manner that, when a data signal of a predetermined voltage is supplied to the driving device via signal wires or a quantity of emitted light emitted from the light-emitting device comes close to a predetermined reference value.
Patent TW-374936-B (TW)
Title: Exposure apparatus
Inventor: MAKINOUCHI SUSUMU
IPC: G03F7/20
Filed: 1998-03-17
Granted: 1999-11-21
Abstract: There is disclosed an exposure apparatus for projecting an image pattern on a mask onto a photosensitive substrate, the apparatus comprising: a body including a projecting optical system through which the image pattern is projected from the mask to the photosensitive substrate; a first stage movable to the body and adapted to mount the mask; a second stage movable to the body and adapted to mount the photosensitive substrate; a measuring device for measuring the position of either one of the mask mounted on the first stage and the photosensitive substrate mounted on the second stage; a vibration sensor for measuring vibration of the body; and a position controller for controlling the position of either one of the mask mounted on the first stage and the photosensitive substrate mounted on the second stage based on a measurement value of the vibration sensor and a measurement value of the measuring device.
Patent TW-392041-B (TW)
Title: Axial fan, method of manufacturing impeller for axial fan, and mold for manufacturing impeller for axial fan
Inventor: UMEDA YUKIHIDE
IPC: B29C45/56
Filed: 1998-04-16
Granted: 2000-06-01
Abstract: This invention provides a compact, flat axial fan which is not limited by the shape of an incorporated rotor magnet and ensures a sufficiently large air flow and wind pressure, wherein the slide (under) piece of a mold that forms the under-molding portions of the vanes of the impeller of the axial fan is pulled out while being twisted (while performing a helical motion) in the direction of central axis of the base portion of the impeller, so that the mold can be formed simple to realize a multi-cavity mold, and the vanes can be formed into an ideal form by setting vane angles depending on different rotating peripheral velocities of the vanes, so that air can be supplied form the under-molding portions of the vanes to the vanes on the outer circumferential side during rotation of the impeller, a method of manufacturing an impeller for the axial fan, and a mold for manufacturing the impeller of the axial fan. For this purpose, in an axial fan comprising an impeller integrally formed, by resin molding, with a plurality of vanes extending from a bottomed cylindrical body to which a rotary axial support shaft body is formed at a center of rotation, each of the vanes is integrally formed by resin molding with a main vane extending from an outer circumferential surface of the bottomed cylindrical body at a predetermined tilt angle.
Patent TW-411456-B (TW)
Title: Optical recording medium, substrate for the same and stamper
Inventor: HOSAKA TOMIHARU
IPC: G11B7/244
Filed: 1998-04-23
Granted: 2000-11-11
Abstract: In an optical recording medium which includes an light absorbing layer formed by vacuum deposition on a substrate having a spiral groove thereon, and a reflecting layer on the light absorbing layer, (1) the groove of the substrate has a groove portion of which cross section is of a trapezoid shape; (2) a ratio (W/TP) of a width (W) of the groove poriton of the substrate relative to a track pitch (TP) is in the range between 0.25 and 0.45; (3) a depth (D) of the groove potion is in the range between 20 % and 80 % of (<lambda>/4n) wherein <lambda> is a wavelength of a laser light, and n is a refractive index of the substrate; and (4) angles <alpha>1 and <alpha>2 formed by both sides of the groove portion and surfaces perpendicular to a bottom surface on intersecting lines of the sides and the bottom surface are in the range between 45 DEG and 80 DEG, respectively, and difference between <alpha>1 and <alpha>2(<alpha>1-<alpha>2) is within +/- 10 DEG.
Patent TW-401565-B (TW)
Title: Scanning apparatus with changeable optical path
Inventor: TSAI CHI-BIN
IPC: G06K7/10
Filed: 1998-04-27
Granted: 2000-08-11
Abstract: The present invention provides a scanning apparatus, which comprises: a housing with a scanning point; a photo-sensor located in the housing for sensing the light beam from the first scanning point used as a document scanner; plural lenses located in said housing for turning the light beam from the document to the photo-sensor. The plural lenses contain at least a first movable lens to change the optical path from the document to the photo-sensor, and thus the photo beam from the document could be transmitted by the first optical path or the second optical path to said photo-sensor. A lens set is located in the housing and also contained in the plural lenses for focusing the light beam transmitted from the document on the photo-sensor by the first and second terminal. In thefirst optical path, the light beam from the document is transmitted by the first terminal of the lens set and focused on the photo-sensor; and in the second optical path, the light beam from the document is transmitted by the second terminal of the lens set and focused on the photo-sensor.
Patent TW-I236502-B (TW)
Title: Prediction of inflammatory disease
Inventor: DUFF GORDON W
IPC: C12Q1/6883
Filed: 1998-05-29
Granted: 2005-07-21
Abstract: Methods, assays and kits are disclosed for detecting a patient's susceptibility to an inflammatory disorder such as coronary artery disease, osteoporosis, nephropathy in diabetes mellitus, alopecia areata, Graves disease, systemic lupus erythematosus, lichen sclerosis, ulcerative colitis, diabetic retinopathy, periodontal disease, juvenile chronic arthritis particularly chronic iridocyclitis, psoriasis, insulin dependent diabetes and other diseases with an IL-1 genetic component. The methods comprise obtaining a biological sample from a patient and determining the presence or absence of a particular haplotype from the IL-1 gene cluster that is associated with an inflammatory disorder. Detection of at least one of the alleles in the haplotype indicates a susceptibility for the inflammatory disorder.
Patent TW-396588-B (TW)
Title: Semiconductor integrated circuit reducing undesired current
Inventor: IZUMI SEIJI
IPC: H02H3/08
Filed: 1998-07-07
Granted: 2000-07-01
Abstract: A semiconductor integrated circuit using a fuse element is provided, in which current flowing through the fuse element or a neighboring circuit area is reduced. The fuse element may be inserted in an inverter consisting of two MOSFETs, so as to reduce the current which directly flows through the fuse element. A flip-flop circuit is provided at the rear stage for judging whether the fuse is disconnected or not. The flip-flop circuit can be operated according to timing data generated by using an internal delay circuit, so as to reduce the current which flows to a neighboring circuit area.
Patent TW-392416-B (TW)
Title: Noise cancellation system for active headsets
Inventor: JONSE OWEN
IPC: A61F11/14
Filed: 1998-07-09
Granted: 2000-06-01
Abstract: An active headset system is provided with either two stereo jack plugs or a six pin connector to provide compatibility with existing socket configurations for personal stereo equipment and headsets on aircraft. The number of connections between the active headset and the remote noise cancellation circuitry is reduced from eight to six through the use of a common contact, having a controlled impedance, that serves as an input connection to corresponding terminals of the two earphones of the active headset. According to another aspect of the present invention, the transients associated with plugging in or unplugging stereo jack plugs or up to seven pin connector into an active headset may be overcome by a transient detector in the noise cancellation circuitry. Yet another aspect of the present invention concerns the powering of the noise cancellation circuitry whether the noise cancellation circuitry is placed inside the active headset or at least partially internal to a remote external device.
Patent TW-380298-B (TW)
Title: Shallow trench isolation process without damage to alignment marks
Inventor: JANG SHIUN-MING
IPC: H01L21/76
Filed: 1998-07-22
Granted: 2000-01-21
Abstract: The high density plasma CVD process has excellent trench filling capability so it is suitable for processes of shallow trench isolation of semiconductor components. But the deposited silicon oxide has special surface topography, it usually need the CMP for planarization. The current process always etches the thicker silicon oxide on top of the wide substrate area first in order to reduce the polishing time and increase productivity. Because the silicon oxide on top of alignment marks is also etched, there is only a thin silicon oxide can be used as protection during polishing so as to cause damage to the alignment marks and disadvantageous to the following processes. If the processes are changed that to etch the silicon oxide on top of alignment mark after the polishing, it can improve the said problem but increase the complexity of processing. Therefore, the invention provides an improved process of shallow trench isolation without damage to alignment marks which is after forming a layer of silicon oxide by high density plasma CVD, to directly apply a CMP process to remove most of the silicon oxide on top of nitride and get a almost flat surface and the alignment marks are not damaged by the protection of silicon oxide locating above the marks; then, employing a mask pattern to etch the wide substrate area and residual silicon oxide on top of alignment marks until the nitride is exposed; lastly, sequentially removing the mask, nitride and pad silicon oxide and reserving the silicon oxide filled in the trench to form the required shallow trench isolation area.