Patent SG-11201901543Y-A (SG)
Title: Precursors and flowable cvd methods for making low-k films to fill surface features
Inventor: LI JIANHENG
IPC: H01L21/02
Filed: 2017-08-25
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 1111111011110111010101111101 110 1 0011101 111011101111 OH 011 11110111011# Organization International Bureau (10) International Publication Number (43) International Publication Date ......0\"\"1 WO 2018/044712 Al 08 March 2018 (08.03.2018) WIP0 I PCT (51) International Patent C23C 16/40 (2006.01) C23C 16/34 (2006.01) C23C 16/32 (2006.01) C23C 16/30 (2006.01) (21) International Application (22) International Filing Date: (25) Filing Language: (26) Publication Language: (30) Priority Data: 62/381,222 30 August 2016 (30.08.2016) 15/681,102 18 August 2017 (18.08.2017) (71) Applicant: VERSUM 8555 S. River Parkway, Temple, AZ 85284 (US). Classification: (72) Inventors: LI, Jianheng; 2870 Kaiser Drive, Apartment C23C 16/50 (2006.01) 105, Santa Clara, CA 95051 (US). VRTIS, Raymond, C23C 16/56 (2006.01) Nicholas; 1510 Randi Lane, Orefield, PA 18069 (US). H01L 21/02 (2006.01) RIDGEWAY, Robert, Gordon; 3277 Dovecote Drive, Quakertown, PA 18951 (US). XIAO, Manchao; 5534 Ca- Number: ballos Place, San Diego, CA 92130 (US). LEI, Xinjian; PCT/US2017/048599 1928 Cherrywood Street, Vista, CA 92081 (US). (74) Agent: ROSSI, Joseph, D. et al.; Stradley Ronon Stevens 25 August 2017 (25.08.2017) & Young, LLP, 30 Valley Stream Parkway, Great Valley Corporate Center, Malvern, PA 19355 (US). English (81) Designated States (unless otherwise indicated, for every English kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, US CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, US DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, MATERIALS US, LLC [US/US]; KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES rx: , :••x...: , nu•x: , m,:r• - - x: ,- ;;;; ; - • rIew - 11•1„i - wm - v• :„,i - • SP16561-123 „;„ — _ „;„ „„, .,_ 15-1 #092 N, ‘1 \ ‘\ \ „vs •• '' ‘‘ ‘,• \\‘‘ ‘,,,? 1 1 \,. , „, eis„ • N \ k , a k .„ \ - „ „ k• N , „,,,IIIIIIIIIII 2.0kV 3.5mm x100k SE(U) A \ \ k 0 500nm comprising at least one introducing into the reactor least one silicon-containing coating on the substrate and has a low k and excellent = (54) Title: PRECURSORS = = _ = = = = = = = FIG. 2 depositing a silicon-containing film, the method comprising: placing a substrate CVD reactor which is at a temperature of from about -20 °C to about 400 °C; compound having at least one acetoxy group to at least partially react the at liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide a portion of the at least one surface feature. Once cured, the silicon oxide coating ,-, ei ,-1 IN (57) : A method for 71. surface feature into a flowable C at least one silicon-containing ---, compound to form a flowable * 1 : at least partially fills at least Il C mechanical properties. ei C [Continued on next page] WO 2018/044712 Al 1#110figinigE1010101HOHOMOHOIREM SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))