baber/WOPTO huggingface dataset:
Patent TW-I264946-B (TW)
Title: Controlling the overlay of multiple video signals
Inventor: BIAN QIXIONG
IPC: H04N5/91
Filed: 2004-12-16
Granted: 2006-10-21
Abstract: In one embodiment the present invention includes receiving an alpha component of a graphics signal, receiving a primary video signal, and receiving a secondary video signal. A portion of the alpha component is extracted and applied to the extracted portion to render the secondary video signal over the primary video signal.
Patent TW-I264018-B (TW)
Title: Data output driver for reducing noise
Inventor: KANG HEE-BOK
IPC: G11C7/10
Filed: 2004-12-28
Granted: 2006-10-11
Abstract: A data input/output driver for use in a semiconductor memory device includes a data transmitting block for transmitting a data between an inside and an outside of the semiconductor memory device and generating a data driving signal in order to indicate a timing of outputting the data; a reference data generating block for generating a reference data; and a switching block for outputting the reference data in response to the data driving signal, wherein the data and the reference data are combined as an output signal.
Patent TW-I241017-B (TW)
Title: Non-volatile memory device and manufacturing method and operating method thereof
Inventor: WONG WEI-ZHE
IPC: H01L27/115
Filed: 2005-01-03
Granted: 2005-10-01
Abstract: A non-volatile memory device having a substrate, a n type well, a p type well, a control gate, a complex dielectric layer, a source region and a drain region is provided. A trench is formed in the substrate. The n type well is formed in the substrate. The p type well is formed in the substrate above the n type well. The junction of p type well and the n type well is higher than the bottom of the trench. The control gate which protruding the surface of substrate is formed on the sidewalls of the trench. The complex dielectric layer is formed between the control gate and the substrate. The complex dielectric layer includes a charge-trapping layer. The source region is formed in the substrate of the bottom of the trench next to one side of the control gate. The drain region is formed in the substrate next to another side of the control gate.
Patent TW-I280828-B (TW)
Title: Reflow temperature control tool and its method for surface mounting electronic devices and circuit substrates
Inventor: HUANG JR-HUNG
IPC: H05K3/30
Filed: 2005-01-26
Granted: 2007-05-01
Abstract: A reflow temperature control tool for surface mounting electronic devices and circuit substrates includes a plurality of tool boards with different thickness. When performing a reflow processing on a surface mounting device, the surface mounting device is mounted at a pre-determined position on a circuit substrates. Then, the surface mounting device is selectively loaded with a number of tool boards with different thickness at corresponding positions according to the reflow temperature requirements of different surface mounting devices and the distribution status of the surface mounting device on the circuit substrate. Finally, the temperature control tool and the loaded circuit substrates pass through a reflow furnace for a reflow operation. Thus, different surface mounting devices are soldered on the circuit board at an optimum temperature due to different thickness of the tool boards.
Patent TW-I275219-B (TW)
Title: Insert type universal socket
Inventor: LI CHIOU-SHAN
IPC: H01R27/00
Filed: 2005-02-04
Granted: 2007-03-01
Abstract: The present invention is an insert type universal socket applicable onto an insert type socket so that the insert type socket can be universally connected with different plugs of various specifications in different countries, where a terminal socket having two electrode terminal slots and one ground line terminal slot is provided with universal type two electrode terminals and one ground line terminal and the insert type plugs connected with the terminal socket is equipped with plug holes for electrically connecting with a plug, where the plug holes are recessed to form a receiving space in which electrode plug holes positioned corresponding to the plugging positions of the electrode terminals and ground line plug holes positioned corresponding to the plugging positions of the ground line terminal are equipped to suit plugs of various specifications in different countries.
Patent TW-I266592-B (TW)
Title: Heat transfer device
Inventor: TUNG CHAO-NIEN
IPC: H05K7/20
Filed: 2005-07-08
Granted: 2006-11-11
Abstract: A heat transfer device includes an electric heater having a heating body made of ceramic, at last a heat pipe thermally connected to the electric heater, and at least a heat sink thermally connected to the heat pipe.
Patent TW-I388628-B (TW)
Title: Curable organopolysiloxane composition, method of curing thereof, semiconductor device, and adhesion promoter
Inventor: MORITA YOSHITSUGU
IPC: H01L33/56
Filed: 2005-07-29
Granted: 2013-03-11
Abstract: A curable organopolysiloxane composition comprising an organopolysiloxane containing alkenyl groups and phenyl groups, an organohydrogenpolysiloxane, a copolymer of a vinyl monomer and a vinyl monomer with hydrosilyl groups, and a platinum catalyst; a curing process that consists of two or more stages of thermal curing; an optical semiconductor device that has a light-transmitting portion made from a cured body of the aforementioned composition; and an adhesion promoter that consists of a copolymer of a vinyl monomer and a vinyl monomer with hydrosilyl groups.
Patent TW-I289888-B (TW)
Title: Mirror process using tungsten passivation layer for preventing metal-spiking induced mirror bridging and improving mirror
Inventor: WANG WEI-YA
IPC: H01L21/302
Filed: 2005-08-22
Granted: 2007-11-11
Abstract: A mirror process uses a tungsten passivation layer to prevent metal-spiking induced mirror bridging and improve mirror curvature. A mirror structure is patterned on a first sacrificial layer overlying a substrate. A tungsten passivation layer is then blanket deposited to cover the top and sidewalls of the mirror structure. A second sacrificial layer is formed overlying the tungsten passivation layer. A releasing process with an etchant including XeF2 is performed to remove the second sacrificial layer, the tungsten passivation layer and the first sacrificial layer simultaneously.
Patent TW-I265060-B (TW)
Title: Forging apparatus capable of controlling the length of blank
Inventor: JANG YUN-DE
IPC: B21J13/08
Filed: 2005-08-29
Granted: 2006-11-01
Abstract: A forging apparatus capable of controlling length of a blank includes a table, a cutting unit for cutting a wire, an adjusting unit, a drive unit and at least one positioning unit, with the adjusting unit and the drive unit being mounted on the table respectively. The adjusting unit includes an adjusting base displaceably arranged on the table, a position limiting mechanism for the wire mounted on the adjusting base and movable with the adjusting base. The drive unit includes a transmission mechanism which moves the adjusting base when it is driven to rotate about its' axis. The positioning unit is mounted on the adjusting base and pressed against the table optionally so as to position the adjusting base in a predetermined position. Through the position limiting mechanism being moved by the adjusting base and through the design that the position unit is pressed against the table so as to position the adjust base, the length of the wire blank to be cut can be easily adjusted.
Patent TW-I278077-B (TW)
Title: Die package structure
Inventor: LIN SEM-WEI
IPC: H01L23/28
Filed: 2006-02-24
Granted: 2007-04-01
Abstract: The present invention relates to a die package structure. The package structure comprises a first substrate, a first die, a sub-package and first molding material. The first die is disposed on the first substrate. The sub-package comprises a second substrate, a second die and second molding material. The second die is disposed under the second substrate. The second molding material encapsulates the second die. The second molding material has at least one protrusion, and the protrusion contacts with the first die. The first molding material encapsulates the first die and the sub-package. Whereby, by utilizing the second molding material that has the protrusion to replace the spacer in package stack, the process of packaging can be shortened, and the components of the package can be reduced.
Patent TW-I403440-B (TW)
Title: A combination of a cover and a plug, a combination of a cover and a container, and a container system including the same
Inventor: BOOZER RICHARD D
IPC: B65D51/18
Filed: 2006-03-30
Granted: 2013-08-01
Abstract: A system (10) for attaching a cover (12) to a container (11) and for closing an opening (21) in the cover (12) with a plug (13) utilizes a container (11) having an upper lip (16). The cover (12) is made of an elastomeric material and has handles (30) each having a notch (31) therein to receive the lip (16) of the container (11). A ridge (32) depends from the periphery of the opening (21) in the cover (12). The ridge (32) is generally square having sides (33) and corners (34). The ridge (33) includes a notch (35) formed in each side (33), and ribs (36) are positioned at each side of the notches (35). The plug (13) has a generally cylindrical stem (41) whose diameter approximates the length of a side (33) of the ridge (32). Diametrically opposed tabs (45) are positioned on the stem (41). By aligning the tabs (45) with the corners (34) of the ridge (32), the stem (41) can pass through the opening (21). Then rotating the plug (13) allows the tabs (45) to pass over the ribs (36) and into opposed notches (35).
Patent TW-I409854-B (TW)
Title: Split gate storage device including a horizontal first gate and a vertical second gate in a trench
Inventor: PRINZ ERWIN J
IPC: H01L21/20
Filed: 2006-07-21
Granted: 2013-09-21
Abstract: A split gate memory cell can include a first gate electrode and a second gate electrode. The split gate memory cell can also include a first diffusion region underlying a trench in a semiconductor substrate, wherein the trench has a sidewall, and the first diffusion region lies closer to the first gate electrode than the second gate electrode. The split gate memory cell can further include a second diffusion region lying outside the trench, wherein the second diffusion region lies closer to the second gate electrode than the first gate electrode. The split gate memory cell can still further include a charge storage layer adjacent to the sidewall of the trench, wherein the charge storage layer includes discontinuous storage elements. Methods of forming and using the split gate memory cell are also disclosed.
Patent TW-I404127-B (TW)
Title: Fluorine based cleaning of an ion source
Inventor: DIVERGILIO WILLIAM F
IPC: H01L21/30
Filed: 2006-12-20
Granted: 2013-08-01
Abstract: A deposit cleaning system for removing deposits from interior surfaces of ion sources and/or electrodes includes a fluorine source, a throttle mechanism, and a controller. The fluorine source supplies fluorine to the ion source as a cleaning material. The throttle mechanism mitigates loss of fluorine through a source aperture of the ion source by at least partially covering the source aperture. The controller controls the supply and flow rate from the fluorine source to the ion source and also controls the positioning of the throttle mechanism.
Patent TW-I406710-B (TW)
Title: Dehumidification rotor, method of manufacturing the same, and dehumidifier
Inventor: TERUJI YAMAZAKI
IPC: B01J35/04
Filed: 2007-03-12
Granted: 2013-09-01
Abstract: The present invention provides a dehumidifying rotor wherein the dehumidifying quantity is great and reduces fewer when time changes even in condition of low temperature of the heater. The dehumidifying rotor of the invention for the dehumidifying machine with opening surface temperature 250-500 DEG C in the inlet side of the reproduction air loads dehumidizer on carrier, which is characterized in that the dehumidifying rotor is separated in to a first loading section loads the first dehumidizer and a second loading section loads the second dehumidizer on intersecting surface vertical to the thickness direction, the first dehumidizer is zeolite with dehumidifying peak temperature 90-160 DEG C, the dehumidizer is uncrystalline inorganic porous plastid or hydrophilic resin with dehumidifying peak temperature 40-100 DEG and dehumidifying peak temperature more than 5 DEG C lower than that of the dehumidifying peak temperature of the first dehumidizer.
Patent TW-I416774-B (TW)
Title: Semiconductor memory devices
Inventor: TERAO MOTOYASU
IPC: H01L45/00
Filed: 2007-05-24
Granted: 2013-11-21
Abstract: A recording layer 52 made of a chalcogenide material which stores a high-resistance state of a high electrical resistance value and a low-resistance state of a low electrical resistance value is used as a memory element RM in a memory cell region, and it is formed so that a concentration of Ga or In of a first layer 52a positioned on a lower electrode TP side of the recording layer 52 is higher than the corresponding concentration of a second layer 52b positioned on an upper electrode 53 side. For example, the recording layer is formed so that a content of Ga or In of the second layer is 5 atomic % or more smaller than that of the first layer. Also, a circuit which can reverse the voltage polarity between the upper electrode and the lower electrode in a set operation and a reset operation is provided.
Patent TW-I405323-B (TW)
Title: Latch-up free vertical tvs diode array structure using trench isolation
Inventor: MADHUR BOBDE
IPC: H01L29/66
Filed: 2007-10-26
Granted: 2013-08-11
Abstract: A method for manufacturing a transient voltage suppressing (TVS) array substantially following a manufacturing process for manufacturing a vertical semiconductor power device. The method includes a step of opening a plurality of isolation trenches in an epitaxial layer of a first conductivity type in a semiconductor substrate followed by applying a body mask for doping a body region having a second conductivity type between two of the isolation trenches. The method further includes a step of applying an source mask for implanting a plurality of doped regions of the first conductivity type constituting a plurality of diodes wherein the isolation trenches isolating and preventing parasitic PNP or NPN transistor due to a latch-up between the doped regions of different conductivity types.
Patent TW-I410714-B (TW)
Title: Side-type backlight module and operating method thereof
Inventor: WU YUCHANG
IPC: G09G3/34
Filed: 2008-09-25
Granted: 2013-10-01
Abstract: A side-type backlight module includes a light guide plate and a plurality of light emitting diode (LED) sources. The light guide plate includes a side. The LED sources are disposed on the side, in which two successive LED sources are spaced by a pitch. It is varied to arrange each pitch between two successive LED sources. Moreover, a method for operating the side-type backlight module is disclosed in the specification.
Patent TW-I414772-B (TW)
IPC: G01B11/06
Filed: 2009-03-06
Granted: 2013-11-11
Abstract: The present invention discloses a measurement method for the material constant of a lubrication medium between two rolling objects.. First, a lubricant medium is placed between the two rolling objects, and apply pressure on one of the two objects so as to squeeze and press the lubrication medium; then, the thickness of the lubrication medium is measured and the inverse approach for Elastohydrodynamic Lubrication is used for getting the pressure distribution of the lubrication medium. Then the pressure distribution, thickness, viscosity, and density are substituted to the specific equation and the relation of the characteristic length which are both defined in the present invention to get the solution. By this calculation, the characteristic length and the material constant can be obtained. The present invention not only can efficiently overcome the error of measurement but also is suitable for non-Newtonian lubricants. According to the measured characteristic length and material constant, the corresponding pressure and load capacity of lubrication medium can be determined.
Patent TW-I410057-B (TW)
Title: Frequency modulation receiver and receive method thereof
Inventor: SHIU HUEI CHIANG
IPC: H04B1/26
Filed: 2009-05-05
Granted: 2013-09-21
Abstract: A frequency modulation receiver is provided. The frequency modulation receiver includes an automatic frequency controller and a signal detector. The automatic frequency controller receives a demodulated frequency modulation signal demodulated from a radio frequency signal and outputs a control voltage to control an oscillation frequency of a local oscillator. The signal detector coupled to the automatic frequency controller receives the control voltage and determines whether the radio frequency signal is a frequency modulation signal according to the control voltage and a predetermined voltage range.
Patent TW-I405076-B (TW)
Title: Platform-based idle-time processing
Inventor: LU CHIEN-PING
IPC: G06F1/32
Filed: 2009-07-28
Granted: 2013-08-11
Abstract: A system and method for transitions a computing system between operating modes that have different power consumption characteristics. When a system management unit (SMU) determines that the computing system is in a low activity state, the SMU transitions the central processing unit (CPU) into a low power operating mode after the CPU stores critical operating state of the CPU in a memory. The SMU then intercepts and processes interrupts intended for the CPU, modifying a copy of the critical operating state. This effectively extends the time during which the CPU stays in lower power mode. When the SMU determines that the computing system exits a low activity state, the copy of the critical operating state is stored in the memory and the SMU transitions the CPU into a high power operating mode using the modified critical operating state.
Patent TW-I410968-B (TW)
Title: Optical recording medium and method for manufacturing the same
Inventor: IGARI TAKAHIRO
IPC: G11B7/2538
Filed: 2009-10-26
Granted: 2013-10-01
Abstract: An optical recording medium includes: a substrate; an information signal layer provided on the substrate; and a protective layer provided on the information signal layer. The information signal layer is provided with a reflecting layer, a recording layer provided on the reflecting layer and first, second and third dielectric layers laminated successively on the recording layer. Refractive indexes of the first, second and third dielectric layers are different from each other between the adjacent dielectric layers to each other. Among the first, second and third dielectric layers, the dielectric layer having the highest refractive index contains, as a main component, at least one member selected from the group consisting of titanium oxide, niobium oxide and a mixture of zinc sulfide and silicon oxide. The dielectric layer having the highest refractive index has a refractive index of 2.3 or more at a wavelength of 405 nm.
Patent TW-I408894-B (TW)
Title: A frequency multiplier
Inventor: YANG TA YUNG
IPC: H03B19/14
Filed: 2009-12-08
Granted: 2013-09-11
Abstract: A resonant power converter is provided and includes a capacitor, an inductive device, a first transistor, a second transistor, and a control circuit. The capacitor and the inductive device develop a resonant tank. The first transistor and the second transistor are coupled to switch the resonant tank. The control circuit generates a first signal and a second signal to control the first transistor and the second transistor respectively. Frequencies of the first signal and the second signal are changed for regulating output of the power converter. The control circuit is further coupled to detect an input voltage of the power converter. A pulse width of the second signal is modulated in response to change of the input voltage.
Patent TW-I413818-B (TW)
Title: Light guiding plate (lgp) device and backlight module using the same
Inventor: LIU HUANG CHUN
IPC: G02F1/13357
Filed: 2009-12-30
Granted: 2013-11-01
Abstract: A backlight module includes a light guide plate and a lighting source. The light guide plate has a main body with a light incidence surface and a light emitting surface. A plurality of accommodating grooves are provided on the light incidence surface, and a plurality of light-separation grooves which are perpendicular to the accommodating grooves are provided on the light emitting surface. The light source includes a circuit board and a plurality rows of light bars welded on the circuit board, where each light bar is composed of a plurality of light emitting diode. When the light source is assembled to the main body, the circuit board is attached to the light incidence surface such that the light bars are disposed for the corresponding accommodating grooves. Therefore, the light-separation grooves can effectively optically separate the light when the light bars are illuminated.
Patent TW-I408229-B (TW)
Title: Novel 2-deoxy-scyllo-inosose synthetase
Inventor: KONISHI KAZUNOBU
IPC: C12N9/12
Filed: 2010-03-25
Granted: 2013-09-11
Abstract: An object of the present invention is to provide a DOI synthase having properties such as stability to heat and pH, which are superior to those of conventional enzymes, and a method for producing DOI using the above-mentioned enzyme. The present invention provides a 2-deoxy-scyllo-inosose synthase having the properties described in the following (1), (2), (4), (6) and (7), and also having the properties described in the following (3) and/or (5): 
(1) action: the enzyme has a function to convert glucose-6-phosphate to 2-deoxy-scyllo-inosose; 
(2) optimum pH range: pH 7.0 to 7.7; 
(3) stable pH range: pH 6.0 to 8.0; 
(4) optimum temperature range: 55°C to 70°C; 
(5) stable temperature range: 20°C to 46°C; 
(6) coenzyme used: NAD + ; and 
(7) molecular weight: 39,000 to 42,000.
Patent TW-I412500-B (TW)
Inventor: HIROSE MOTOYUKI
IPC: C03B5/225
Filed: 2010-06-18
Granted: 2013-10-21
Abstract: Disclosed is a vacuum degassing device which can remove the aggregates of gaseous components of molten glass that have adhered to a window provided in the ceiling of a vacuum housing and the ceiling of the vacuum housing in the vicinity thereof without stopping operation. The vacuum degassing device for molten glass is characterized in that at least one chamber aperture is provided in the ceiling of a vacuum degassing chamber, in that at least one window is provided in the ceiling of the vacuum housing at a position corresponding to the position of the aforementioned chamber aperture in the horizontal direction, the aforementioned window being configured from a housing aperture formed in the ceiling of the vacuum housing and a transparent window embedded in said housing aperture, and in that the aforementioned transparent window has a window aperture which is plugged with a heat-resistant rubber plug having a hole that is oriented in the same direction as the aforementioned window aperture and has a contaminant elimination means comprising a metal rod-shaped member inserted therein.
Patent TW-I404477-B (TW)
Title: Method for forming circuit patterns on surface of substrate
Inventor: TSAO LUNG CHUAN
IPC: H05K3/30
Filed: 2010-06-29
Granted: 2013-08-01
Abstract: A method for forming circuit patterns on a surface of a substrate is provided and has steps of: providing and pre-heating a substrate having an insulation surface on one side thereof; providing an activation connection device for oscillating and painting an activation solder onto the pre-heated insulation surface to heat and melt the activation solder; applying ultrasonic waves to the melted activation solder by the activation connection device, so as to activate the activation solder and the insulation surface by the ultrasonic waves; and moving the activation connection device, so as to form a circuit pattern on the insulation surface by the activation solder.
Patent TW-I627281-B (TW)
Inventor: SCHAEFFER MERRILL
IPC: C12N15/34
Filed: 2010-09-01
Granted: 2018-06-21
Abstract: 本發明提供降低包含PCV-2抗原之組合物之殺病毒活性的方法，以及包含PCV-2抗原之抗原性製劑及免疫原性組合物，其殺病毒活性已降低。此外，本發明亦關於一種提高包含PCV-2抗原之免疫原性組合物之免疫原性的方法，以及具有提高免疫原性之免疫原性組合物。