baber/WOPTO huggingface dataset:
Patent TW-548085-B (TW)
Title: A rescue column used in earthquake
Inventor: UONO TOSHIAKI
IPC: A47B96/14
Filed: 2000-02-17
Granted: 2003-08-21
Abstract: This invention of a rescue column used in earthquake mainly includes: (1) to install a metallic plate on the top of a metallic post; (2) to embed the two curve ends of the installed metallic into the table bottom by screws and to fix the post onto the table bottom; (3) to set an adjustable supporting body, which is able to move axially, on the other end of the post; (4) to spirally set a tightening-loosing ring able to move up and down axially around the adjustable supporting body; (5) to install a suspending ring in the proper position of the installed metallic plate or the post. While earthquake, users may hide under the table and grasp the rescue post, as the table is prevented from displacement or collapsing, and secure their bodies by protecting them from being convulsed out of the table while the pressure strength of the table is enhanced to withstand possible falling down of large furniture or ceiling by the rescue post which contacts the floor.
Patent TW-431950-B (TW)
Title: Dual purpose handoff station for workpiece polishing machine
Inventor: HEMPEL GENE
IPC: B24B37/20
Filed: 2000-03-08
Granted: 2001-05-01
Abstract: The present invention provides a dual purpose workpiece handoff station for intermediately staging a semiconductor wafer, or other workpiece, being transferred between processing stations in, for example, a chemical-mechanical planarization (CMP) machine. The handoff station includes a workpiece processing surface; such as a polishing pad or buffing pad, defining a plurality of apertures for applying fluids, including water, chemicals, slurry, or vacuum, to the surface of a workpiece. In operation, a workpiece carrier moves a polished wafer from a primary polishing surface to the handoff station, and polishes, buffs, or cleans the wafer in the handoff station by rotating the wafer and oscillating the wafer across the handoff station polishing surface while pressing the wafer thereon.
Patent TW-452855-B (TW)
Title: Manufacturing method of semiconductor device
Inventor: TAKEBUCHI MASATAKA
IPC: H01L21/8247
Filed: 2000-03-10
Granted: 2001-09-01
Abstract: The present invention relates to a manufacturing method of semiconductor device having MISFETs, and particularly, to a manufacturing method of semiconductor device for mounting a plurality of MISFETs formed by different kinds of gate insulating films, respectively on the same substrate. More particularly, the present invention relates to a manufacturing method of semiconductor device for mounting at least the nonvolatile storage circuit and logic circuit on the same substrate. The object of the present invention is to provide a manufacturing method of semiconductor device having a MISFET where a gate insulating film having high nitrogen atomic density can be surely peeled in a region, on which a gate insulating film having low nitrogen atomic density is to be formed, when gate insulating films having different nitrogen atomic densities are formed. To solve the problem, the present invention is a manufacturing method of semiconductor device for mounting nonvolatile storage element Qm and a P-channel MISFET Qp on the same substrate. When nitride treatment is performed to a tunnel insulating film 61 of a nonvolatile storage element Qm, a forming region of a gate insulating film 63 of the P-channel MISFET Qp is covered in advance with a thick buffer silicon oxide film. Since a nitride film is not formed between the buffer silicon oxide film and a base substrate 1 when nitride treatment is performed to the buffer silicon oxide film, the buffer silicon oxide film can be surely peeled, when the gate insulating film 63 is formed.
Patent TW-417041-B (TW)
Title: Phase shift mask using cralon as phase shifter material and manufacturing method thereof
Inventor: PARK JO-HYUN
IPC: G03F1/68
Filed: 2000-03-22
Granted: 2001-01-01
Abstract: A phase shift mask formed by depositing on a transparent substrate a phase shifter material containing chromium (Cr), aluminum (Al), oxygen (O) and nitrogen(N). The transmissivity of a phase shifting layer of the phase shift mask, which is a CrAION layer, is increases, and the phase of exposure light is shifted by 180 DEG at a predetermined thickness, so that a fine photoresist pattern can be formed. Also, the transmissivity of the phase shifting layer with respect to inspection light, which has a longer wavelength than exposure light, is relatively low, which permits accurate inspection of the mask. The phase shift mask can be useful in photolithography using a short wavelength of exposure light, and in an inspection apparatus using an inspection light source having a longer wavelength than exposure light.
Patent TW-508877-B (TW)
Title: Method of connecting electrode, narrow pitch connector, pitch changing device, micro-machine, piezoelectric actuator, electrostatic actuator, ink-injecting head, ink-injecting printer, LCD device, and electronic machine
Inventor: SATO EIICHI
IPC: H01R43/02
Filed: 2000-03-31
Granted: 2002-11-01
Abstract: The method of connecting electrode, narrow pitch connector, pitch changing device, micro-machine, piezoelectric actuator, electrostatic actuator, ink-injecting head, ink-injecting printer, LCD device, and electronic machine of the present invention can depress displacement of terminal electrodes even when objects to be connected that have different thermal expansion coefficients are connected. After terminal electrodes (28) of an object (26) to be connected and terminal electrodes (30) of a narrow pitch connector (20) are superimposed, these terminal electrodes are joined by thermo-compression bonding. The temperature difference between the object (26) and the connector (20) is set so that the distances between the electrodes (28) of the object (26) are equal to those between the electrode (30) of the connector when they are heated. Then, connection is executed. If a substrate (22) and the object (26) are formed of silicon, the connection with high accuracy can be attained.
Patent TW-468368-B (TW)
Title: Noise filter, electronic apparatus subjected to noise countermeasure, and method for removing noise
Inventor: SAITO YUTAKA
IPC: H01F1/01
Filed: 2000-06-26
Granted: 2001-12-11
Abstract: In a noise filter that removes noise from a power source line or a signal line, in which a noise is overlapped to a power source current or an electronic signal current that is inputted to the power source line or the signal line, noise is removed by winding a conducting wire around a magnetic material, which is used for the magnetic core. The frequency characteristic for the impedance of the noise filter has a maximum value similar to the specific frequency of an LC parallel circuit. The removal of noise is conducted including the self-resonance frequency, i.e. the self-resonance frequency region of the specific frequency. The noise filter contains an impedance frequency characteristic similar to the impedance frequency characteristics of an LC parallel circuit, and additionally, is capable of effectively removing the noise that has the specific frequency.
Patent TW-479007-B (TW)
Title: Method of and apparatus for disposing waste
Inventor: AOKI TOSHIYUKI
IPC: B29B17/04
Filed: 2000-06-30
Granted: 2002-03-11
Abstract: A waste disposal apparatus comprising a crushing means for crushing waste including a circuit board into fragments, and a circuit board sorting means for sorting fragments of the circuit board from the fragments of the waste pulverized by the pulverizing means through eddy current sorting or gravity concentration so as overcome a difficulty in separation between nonferrous metals. With this arrangement, lead contained in circuit boards can be sorted and separated without being diffused, and further, the volume of fragments of the circuit boards adapted to be mingled into fragments of other waste such as nonferrous metals and plastics can be decreased. Thus, even though waste including circuit board is directly pulverized by the pulverizing means, thereby it is possible to enhance the quality of recovered valuables.
Patent TW-471021-B (TW)
Title: Improved process gas distribution for forming stable fluorine-doped silicate glass and other films
Inventor: WANG YAXIN
IPC: H01L21/31
Filed: 2000-07-27
Granted: 2002-01-01
Abstract: A substrate processing system includes a housing defining a chamber for forming a film on the substrate surface of a substrate disposed within the chamber. The system includes a first plurality of nozzles that extend into the chamber for injecting a first chemical at a first distance from a periphery of the substrate surface, and a second plurality of nozzles that extend into the chamber for injecting a second chemical at a second distance from the periphery of the substrate surface. The second distance is substantially equal to or smaller than the first distance. In one embodiment, the first chemical contains a dielectric material and the second chemical contains dopant species which react with the first chemical to deposit a doped dielectric material on the substrate. Injecting the dopant species closer to the substrate surface than previously done ensures that the dopant species are distributed substantially uniformly over the substrate surface and the deposition of a stable doped dielectric layer.
Patent TW-510841-B (TW)
Title: Polishing apparatus, polishing method and method conditioning polishing pad
Inventor: KOBAYASHI TATSUNORI
IPC: B24B53/017
Filed: 2000-08-25
Granted: 2002-11-21
Abstract: A polishing apparatus comprises a plurality of polishing stations for polishing materials to be polished and a plurality of cleaning stations for cleaning the materials being polished, the polishing stations and the cleaning stations being alternately arranged; and an arm for holding the materials being polished and transferring the materials being polished between the polishing stations and the cleaning stations successively. The arm includes a polishing head for holding the material being polished. Each of the cleaning stations comprises a retainer stand on which the material being polished is placed, and a cleaning device for cleaning the material being polished in a state held by the polishing head, cleaning the material being polished in a state placed on the retainer stand, and cleaning the polishing head in a state where the material being polished is separated from the polishing head. A polishing method is used in a polishing apparatus comprising a plurality of polishing stations for polishing materials to be polished and an arm for holding the materials being polished and transferring the materials being polished between the polishing stations successively, each of the polishing stations including a platen having a polishing pad affixed to a surface of the platen, the arm including a plurality of polishing heads, each of which holds the material being polished and brings one surface of the material being polished into contact with the polishing pad, the material to be polished being polished by the polishing pad with relative movement between the polishing head and the platen. The polishing method comprises the steps of fitting a spindle for supporting the polishing head in a horizontally rotatable manner into each of fitting portions formed in each of a plurality of spindle housings provided in the arm; rotating the material being polished and the polishing pad relatively while keeping the material being polished and the polishing pad contacted with each other; and adjusting an axial position of the polishing head and changing a position of the polishing head relative to the arm by an adjusting mechanism provided on the spindle, whereby the materials to be polished are each polished while being adjusted in position thereof.
Patent TW-484147-B (TW)
Title: Electronic component having wire
Inventor: TOI TAKAOMI
IPC: H01F17/04
Filed: 2000-09-29
Granted: 2002-04-21
Abstract: It is an object to provide an electronic component which prevents Cu elution to a solder from a wire, and can prevent the wire from becoming thin and being broken. A chip coil includes an electrode which are provided at both ends of a core. The electrode includes an underlying metal layer (Ag), a Ni plated layer, and a Sn-Cu plated layer in the sequence from the bottom. Ends of a wire are embedded in the Sn-Cu plated layer of the electrode by thermal compression bonding. When the chip coil is mounted on a land of a substrate by a reflow soldering, Cu of the Sn-Cu plated layer is eluted into the reflow solder, Cu elution from the wire is prevented.
Patent TW-525122-B (TW)
Title: Electronic device
Inventor: INUKAI KAZUTAKA
IPC: H05B33/00
Filed: 2000-11-06
Granted: 2003-03-21
Abstract: To provide an active matrix electronic device capable of performing clear color gray-scale display. The electronic device is characterized in that a plurality of pixels composing a pixel portion is surrounded by a source signal line, a first gate signal line, a second gate signal line, and a power supply line, and that the plurality of pixels have a switching TFT, an EL driving TFT, an eliminating TFT, and an EL element, respectively.
Patent TW-480557-B (TW)
Title: Substrate processing apparatus and substrate processing method
Inventor: OKUBO KENICHI
IPC: H01L21/00
Filed: 2000-11-10
Granted: 2002-03-21
Abstract: Transferring apparatus control means movement of a transferring apparatus for transferring a wafer to a resist liquid coating unit from a cooling process unit. A storage section of the transferring apparatus controller stores a coating time required for a resist film coating and a moving time required for the transfer of the wafer. When a coating start time of a resist film is inputted, the control section calculates a coating end time from the stored coating time. Further, the control section calculates time of taking out a wafer W, which is next subjected to a coating process from the cooling process unit, from the coating end time and the stored moving time. Based on the calculated time, the transferring apparatus controller instructs the transferring apparatus about timing to take out the wafer. This makes it possible to improve the throughput.
Patent TW-448067-B (TW)
Title: Event editing method for simulation games
Inventor: GAO HAI-XIN
IPC: A63F13/10
Filed: 2000-11-16
Granted: 2001-08-01
Abstract: An event editing method for simulation games comprises the following steps: reading each event sequentially to complete the event cycle mechanism; setting a location number for being used as a base to choose the location to execute the event; creating an event result with a content of waiting for X days, and deciding the event processing schedule according to the X days; setting task status of event condition and deciding the event processing schedule according to the task status; creating an event number, and processing the numbered event according to the event number; marking a map marking point number, and processing the event according to the map marking point number; and creating a selective event, and completing the event result according to the selective event.
Patent TW-476862-B (TW)
Title: Reflection-type liquid crystal display and method for manufacturing the same
Inventor: KANOU HIROSHI
IPC: G02F1/1335
Filed: 2001-01-20
Granted: 2002-02-21
Abstract: A reflection-type liquid crystal display according to the invention includes two glass substrates, a transparent electrode provided on one glass substrate, an insulator film which is provided on another glass substrate and on which an uneven structure is formed, a reflecting electrode provided on the insulator film, and a liquid crystal layer sandwiched between a side of the transparent electrode and a side of the reflecting electrode. The insulator film includes a first insulating layer in which a large number of depressions isolated as surrounded by protrusions are irregularly arranged and a second insulating layer covering the insulating layer entirely. The protrusions are all connected in a network, so that if some of these protrusions have weaker adherence with an underlying layer, they can be supported by the surrounding protrusion.
Patent TW-510055-B (TW)
Title: Semiconductor device and method of manufacturing the same
Inventor: MATSUMOTO TAKUJI
IPC: H01L21/8238
Filed: 2001-02-07
Granted: 2002-11-11
Abstract: A silicon nitride film is formed between interlayer insulating films covering an upper surface of an element formed on a surface of a semiconductor layer. With this structure, a semiconductor device comprising an isolation insulating film of PTI structure, which suppresses a floating-body effect and improves isolation performance and breakdown voltage, and a method of manufacturing the semiconductor device can be obtained.
Patent TW-515186-B (TW)
Title: Method of management of the transmission of multimedia data, via an Internet type network, especially the telephone or videophone data, and chip card for using this method
Inventor: URIEN PASCAL
IPC: H04N7/14
Filed: 2001-02-09
Granted: 2002-12-21
Abstract: This invention relates to a method of management of the transmission of data via an Internet (RI) network between the calling subscriber (Aa) and the called subscriber (Ab). Chip card (2a) cooperates with a terminal (1a) and presents the function of client/server ""WEB"" (SWEB), of ""CGI"" and of ""proxy"" (27a). The function ""proxy"" is utilized for the signalisation channel (cs) and the data channel (CD). The terminal (1a) and chip card (2a) comprises the special communication protocal layer permitting the establishment of the sessions of the bidirectional data transmission between them and/or with the Internet network (RI). The chip card (2a) stores the applications associated with the registration protocal (900a) and the subscriber's localisation protocal (901a), and the subscriber's profile (903a). It plays the role of a ""proxy"" on the signalisation (cs) and/or data (CD) channel. The present invention also relates to the associated chip card.
Patent TW-477880-B (TW)
Title: Endless metallic belt
Inventor: FUJIOKA HIROSHI
IPC: F16G5/16
Filed: 2001-03-23
Granted: 2002-03-01
Abstract: To provide an endless metallic belt in which an improvement in durability of a ring assembly as a whole which is a component thereof is attained. The endless metallic belt includes the ring assembly 31 formed with a plurality of metallic rings R1, R2 ... being laid one upon the other freely slidable mutually and with a plurality of metallic blocks 32, 32 ... being slidably supported in the ring assembly 31. Lube oil retaining grooves 34 are formed on the internal circumferences of the outer side rings R2, R3 ... which are sliding surfaces of the adjacent rings and, on the other hand, an internal circumference of the inner most ring R1 of the ring assembly 31 which contacts slidably with saddle surfaces 324, 324 of each block 32, 32 ... consists of a plain surface 35 upon which no lube oil retaining grooves 34 are formed. Therefore, the sliding surfaces between the adjacent rings are lubricated with the lube oil maintained in the lube oil retaining grooves 34 and wear of the sliding surface is reduced. Furthermore, since the internal circumference of the inner most ring R1 which contacts slidably with the saddle surface 324, 324 of each block 32, 32 ... has the plain surface 35 with low degree of surface roughness, wear rate of the internal circumference is reduced.
Patent TW-521279-B (TW)
Title: Method and apparatus for a flexible controller for a DRAM generator system
Inventor: WEINFURTNER OLIVER
IPC: G11C5/14
Filed: 2001-04-03
Granted: 2003-02-21
Abstract: In a controller for controlling a generator system on a memory chip, the controller operates as a state machine in accordance with a state diagram including a plurality of X states. An evaluation arrangement evaluates a combination of only a predetermined one of a plurality of N input signals from remote devices, and only a predetermined one of a plurality of X state signals indicating a current state in the state diagram at any instant of time. The controller generates a plurality of Y output signals having a predetermined logical value that indicates that a change from one state to a next state in the state diagram is to be made when the predetermined one of both the plurality of N input signals and the plurality of X state signals comprise a predetermined logical value. A state storage device is responsive to the predetermined one of a plurality of Y output signals having a predetermined logical value, and generates a revised plurality of X state output signals for transmission back to the evaluation arrangement indicating a change in the state diagram from a current state to a next state of the plurality of X states. An output arrangement is responsive to the revised plurality of X state output signals for generating separate predetermined ones of M output signals to remote devices associated with said next state for controlling the generator system.
Patent TW-557626-B (TW)
Title: Composite amplifier
Inventor: HELLBERG RICHARD
IPC: H03F3/68
Filed: 2001-05-24
Granted: 2003-10-11
Abstract: A composite amplifier includes a main power amplifier (10) and an auxiliary power amplifier (12), which are connected to a load (26) over a Doherty output network. An attenuator (34) is provided for activating the auxiliary power amplifier (12) before the main amplifier (10) is saturated. Preferably the input drive voltage to the auxiliary power amplifier (12) is increased along a smooth curve as the input signal amplitude to the composite amplifier increases.
Patent TW-I259197-B (TW)
Title: Resin composition, extruded element and antistatic sheet
Inventor: MIARA NAOYA
IPC: C08L33/06
Filed: 2001-10-04
Granted: 2006-08-01
Abstract: This invention relates to an anti-static sheet including 60 wt% to 85 wt% of polystyrene-based resin, and 15 wt% to 40 wt% of polyether ester amide. The polystyrene-based resin is a copolymer formed by styrene-based monomer, and meta-acrylic ester-based monomer.
Patent TW-511200-B (TW)
Title: Semiconductor device and manufacturing method thereof
Inventor: SHIMIZU HIRONOBU
IPC: H01L21/3205
Filed: 2001-10-15
Granted: 2002-11-21
Abstract: In a semiconductor device, a second wiring layer 7 is formed via an inter-layer insulation film 6 on a first wiring layer 2 connected to an active region of a silicon substrate 1, and a bonding pad 14 is placed on the second wiring layer 7 via a protection film 8 and a polyimide film 10, so as to overlie the active region of the silicon substrate 1. The second wiring layer 7 has a plurality of wires 7a and 7b in a region underlying the bonding pad 14: the wire 7a is joined to the bonding pad 14 via opening sections 9 and 11 provided in the protection film 8 and the polyimide film 10, respectively, and the protection film 8 and the polyimide film 10 are placed between the wires 7b and the bonding pad 14. This structure can provide a semiconductor device having multiple wiring layers and a bonding pad located at a position overlying an active region of a semiconductor substrate, which can simplify a manufacturing process and reduce a device size, and enhances the flexibility in providing the wiring between semiconductor elements and in the location of the bonding pad, and a manufacturing method of such a semiconductor device.