baber/WOPTO huggingface dataset:
Patent TW-402532-B (TW)
Title: Tool for enlarging hole
Inventor: FREEMAN GLENN D
IPC: B27F5/12
Filed: 1999-01-05
Granted: 2000-08-21
Abstract: A tool for enlarging the size of an existing bore to a selected enlarged size. The tool has a drill sized to define the enlarged bore, and a guide having a cylindrical body sized so that the guide can be rotated in the existing bore. The guide and drill including cooperating structures for releasably interconnecting the guide and the drill with the guide and drill coaxially aligned whereby, with the guide releasable secured to the drill, the guide can be located within the original hole to guide the cutting action of the drill as it enlarges the original hole.
Patent TW-380045-B (TW)
Title: Devices and methods for monitoring female arousal
Inventor: HOVLAND CLAIRE T
IPC: A61B10/00
Filed: 1999-01-13
Granted: 2000-01-21
Abstract: Devices and methods according to embodiments of the invention measure physiological changes that occur in the female during sexual arousal. There include changes in clitoral, vaginal-artery, and/or vaginal-capillary blood flow, clitoral engorgement, and bioimpedance, to name a few. Feedback devices and methods assist a patient or medical professional to determine when arousal occurs and what its best triggers are for a particular patient. Overnight arousal-event monitoring, or other continuous monitoring over extended periods of time, either at home or away from home, allows diagnosis of vasculogenic impairment or other problems. The effects of medicinal therapies aimed at female sexual dysfunction can be quantified and used to titrate proper dosages. Embodiments of the invention provide objective, quantifiable measures of multiple physiological variables associated with female arousal, in a manner heretofore unseen in the prior art.
Patent TW-466602-B (TW)
Title: Gate manufacture method
Inventor: YOU TSUEI-RUNG
IPC: H01L21/28
Filed: 1999-01-19
Granted: 2001-12-01
Abstract: This invention provides a gate manufacture method. A sandwich structure of amorphous silicon layer/polysilicon layer/amorphous layer is deposited on top of the gate oxide layer. A gate electrode of small crystallites of polysilicon layer/large crystallites of polysilicon layer/small crystallites of polysilicon layer is formed after the gate area is defined and thermal process is performed. Alternatively, a sandwich structure of small crystallites of polysilicon layer/large crystallites of polysilicon layer/small crystallites of polysilicon layer is deposited onto the gate oxide layer and then gate definition and thermal process are then carried out.
Patent TW-416171-B (TW)
Title: Variable-wavelength light-emitting device and method of manufacture
Inventor: SUEMASU TAKASHI
IPC: H01L33/26
Filed: 1999-03-02
Granted: 2000-12-21
Abstract: An object is to provide a variable-wavelength light-emitting element which employs a direct gap semiconductor having a magnetic moment for a semiconductor layer serving as an active layer, so that the semiconductor has reduced crystal distortion and stable characteristics as the active layer of the light-emitting element, as well as a method of fabricating the variable-wavelength light-emitting element. A semiconductor silicide or a semiconductor silicide doped with transition metal is used to form an active layer (<beta>-FeSi2 transformed into spheres) (2'') of a semiconductor light-emitting element, and the active layer is sandwiched between p-type and n-type semiconductor layers forming a pn junction, the p-type and n-type semiconductor layers having a forbidden bandwidth greater than that of the semiconductor silicide.
Patent TW-424255-B (TW)
Title: Planar fluorescent lamp with spiral discharge channel and its manufacturing method
Inventor: TSAI GUANG-LUNG
IPC: H01J61/00
Filed: 1999-03-16
Granted: 2001-03-01
Abstract: A planar fluorescent lamp and its manufacturing method are disclosed. The planar fluorescent lamp can be rectangular or round, which comprises at least an internal isolation board to separate the lamp cavity into a spiral channel, so as to form the longest discharge path to obtain the maximum lamp luminance. The initialization voltage used in the spiral channel is far lower than that in a creeping channel. Each component of the fluorescent lamp of the present invention can be glued together by the glass fuse material and thus it is easy for mass production. Also, since the lamp can be started with a lower initialization voltage, the energy can saved.
Patent TW-393591-B (TW)
Title: Dry-etching method and apparatus, photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereof
Inventor: SASAKI TAKAEI
IPC: G03F1/80
Filed: 1999-08-06
Granted: 2000-06-11
Abstract: A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a photomask by forming patterns to be transferred to a wafer on a photomask bland. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
Patent TW-448388-B (TW)
Title: Disposal method of network link passing charge for digital versatile disc and digital television playing module
Inventor: HUANG JAU-SHIUNG
IPC: G06Q50/00
Filed: 1999-09-14
Granted: 2001-08-01
Abstract: It is a kind of disposal method of network link passing charge for digital versatile disc and digital television playing module. There includes a default web page in the DVD or DTV playing module that can be activated by this playing module. The default web page has dynamic link to playing module related products (like DVD and DTV materials or commercial message). When the dynamic link is selected, it attaches a string to show the publishers of the DVD or DTV playing module according to the corresponding link instruction of the above-mentioned dynamic link. And web pages linked can pay the corresponding passing charge to the above-mentioned publishers after the transaction has been completed according to the attached strings.
Patent TW-445524-B (TW)
Title: Method for forming raised source and drain
Inventor: CHEN YI-SHI
IPC: H01L21/336
Filed: 2000-05-10
Granted: 2001-07-11
Abstract: A method for forming self-aligned raised source and drain regions on a semiconductor wafer includes the steps of defining a substrate, growing a first layer of dielectric material over the substrate, depositing a layer of polysilicon over the first layer of dielectric material, patterning and forming at least one gate, depositing a second layer of dielectric material over the gate and the first dielectric layer and masking the second dielectric layer to define a source region and a drain region. The method also includes the steps of anisotropically etching to form sidewall spacers contiguous with the gate, collimated sputtering to deposit a layer of silicon, and implanting ions into the deposited silicon.
Patent TW-I228611-B (TW)
Title: Reflection type liquid crystal display device and method for manufacturing the same
Inventor: ISHITAKA YOSHIHIKO
IPC: G02F1/136
Filed: 1999-12-27
Granted: 2005-03-01
Abstract: Disclosed is a highly reliable reflection type liquid crystal display device in which generation of cracks in a first electrode layer, which occurs due to the sinking in of the terminals of a driving element, is prevented to make it possible to reliably establish an electrical connection between the driving element and the first electrode layer, and in which it is possible to prevent an organic film from being separated from a substrate. A reflection type liquid crystal display device includes a pair of substrates, a seal material held between the pair of substrates, and a liquid crystal layer sealed in the space surrounded by the pair of substrates and the seal material, wherein, on the surface of one of the pair of substrates opposed to the other substrate, there are sequentially formed an organic film having a large number of protrusions and recesses, a metal reflection film, an overcoat film, and first electrode layers, and wherein the organic film and the metal reflection film are formed excluding at least a driving element mounting region.
Patent TW-466107-B (TW)
Title: Infrared thermal image detection system
Inventor: JANG OU
IPC: A61B5/00
Filed: 2000-01-07
Granted: 2001-12-01
Abstract: The present invention provides an infrared thermal image detection system which comprises an infrared detection device, a circuit device and a display device, wherein the infrared detection device is to detect the amount of radiation of the object to be detected, and generate a digital signal corresponding to the amount of radiation; the circuit device is to have the gain and level shift processing to the electrical signal based on the preset coefficient in the specific operation environment and the output signal of the infrared detector, and form the picture frame data corresponding to the amount of radiation; and the display device to receive the picture frame data of said circuit device and display it; thereby the effect of high precision, simple operation, assembly and convenient replacement, cost reduction can be achieved.
Patent TW-476157-B (TW)
Title: Semiconductor devices
Inventor: MIZUNO HIROYUKI
IPC: G11C7/06
Filed: 2000-02-11
Granted: 2002-02-11
Abstract: The present invention relates to a semiconductor device. The subject of the present invention is to solve the problem that sensing time is apparently slowed down as the voltage of power source is reduced and to provide a sensing circuit for DRAM memory cell, in which the sensing time of the corresponding low voltage is at high speed when temperature is high and the sensing time is changed greatly for the difference of manufacture process. The representing solving means of the present invention is described in the following. A switch means, which can be separated or combined, is installed between bit line BL and local bit line LBL, in which both bit line BL and local bit line LBL are connected to the memory cell. BL is charged to VDL/2 in advance and LBL is charged to VDL in advance, in which VDL is the voltage that has the maximum amplitude of the bit line BL. SA contains the first circuit, which includes the differential MOS pair received by the gate combined with BL, and the second circuit, which combines with the full amplitude increase of LBL and has the function of maintaining data. For BL and LBL, when the capacities are combined through a capacitor, better result is obtained for SA by using the latch-shaped SA connected to LBL.
Patent TW-434714-B (TW)
Title: Method for making silicide
Inventor: YANG JIUN-DE
IPC: H01L21/28
Filed: 2000-03-13
Granted: 2001-05-16
Abstract: The present invention discloses a method for making a silicide, which comprises: providing a semiconductor substrate formed with a semiconductor structure; forming a metal layer on the semiconductor structure; performing a first annealing step at a first temperature to form a structure with a first low resistance structure on the portion where the metal layer and the silicon surface of the semiconductor structure contact each other; removing the metal reactant outside the unreacted metal layer and the structure with a first low resistance; forming a compression cover layer on the semiconductor substrate; finally, performing a second annealing step at a second temperature to convert the structure with a first low resistance into a structure with a second low resistance.
Patent TW-I230177-B (TW)
Title: Polycarbonate composition having reduced tendency to splay
Inventor: BOLTON DANIEL H
IPC: C08K5/00
Filed: 2000-04-06
Granted: 2005-04-01
Abstract: A transparent thermoplastic molding composition having good release properties is disclosed. The composition which contains no magnetic elements contains a polycarbonate resin and 0.01 to 0.3 percent by weight of a mold release agent. The agent is the product of a reaction of a compound represented by formula (I), where R1 denotes a C1-30-alkyl group, with at least one member selected from the group consisting of formula (i), where R2 and R3 independently denote C1-30-alkyl or an aryl group, and formula (ii), where n is 1-7.
Patent TW-448087-B (TW)
Title: Improvement in and relating to edge grinding
Inventor: STOCKER MARK ANDREW
IPC: B24B1/00
Filed: 2000-05-16
Granted: 2001-08-01
Abstract: A disc-like workpiece 10, such as a semiconductor wafer, is positioned relative to a grooved grinding wheel 32 by the steps of rotating the workpiece and wheel about respective parallel axes, performing a preliminary grind, measuring the profile of the workpiece rim, axially adjusting the wheel position, performing a second preliminary grind and repeating the steps until the desired accuracy of the profile is achieved. A method and apparatus is also described for forming the edge of a forming wheel, for example using electro-discharge machining.
Patent TW-469294-B (TW)
Title: Austempered ductile iron and method for making the same
Inventor: YANG HSIN-LEE
IPC: C21D1/32
Filed: 2000-05-17
Granted: 2001-12-21
Abstract: An Austempered ductile iron mainly comprises: 3.5-3.9% of C, 2.4-2.9% of Si, and 0.025-0.04% of Mg. A method for producing such an iron comprises: producing an austenite by raising the temperature of a high temperature furnace to 805-950 degree C; transferring the austenite to a low temperature furnace for Austempering at 280-330 degree C, and maintaining at a constant temperature for 1-3 hours. The Austempered ductile iron according to the present invention can further comprises: 0.001-0.6% of Mn, 0.001-1.0% of Cu, 0.001-1.0% of Ni, or 0.001-0.3% of Mo, in order to improve its hardening energy. The Austempered ductile iron according to the present invention has a better wear resistance, and can be applied on a thick cast article. In a working environment higher than 400 degree C, the matrix texture thereof will not change while maintaining an excellent mechanical property.
Patent TW-I283240-B (TW)
Title: VLA-4 inhibitor compounds
Inventor: MACHINAGA NOBUO
IPC: C07D277/48
Filed: 2000-06-30
Granted: 2007-07-01
Abstract: A compound represented by the following formula I, or a salt thereof.
Patent TW-476686-B (TW)
Title: Wire-discharge machining apparatus
Inventor: SATO TATSUSHI
IPC: B23H1/02
Filed: 2000-07-12
Granted: 2002-02-21
Abstract: A wire-discharge machining apparatus for machining a work by generating pulse-state discharges between a wire electrode and the work. In machining, the apparatus can sufficiently detect all portions where wire-breakage frequently occurs, and strictly discriminates between a condition detected and a control result, thereby performing necessary and sufficient wire-breakage prevention control. This wire-discharge machining apparatus has an evaluating device and a controller. The evaluating device measures cycles, frequencies, or ignition delay time of the discharges, evaluates dispersion of the measured values, and outputs an evaluation value for the variation. The controller controls machining conditions according to the evaluation value.
Patent TW-526330-B (TW)
Title: Optical voltage sensor
Inventor: HAMADA HIDENOBU
IPC: G01R15/24
Filed: 2000-07-28
Granted: 2003-04-01
Abstract: In an optical voltage sensor which comprises a sensor part having a polarizer 1, a crystal λ/4 plate 2, a LiNbO3 crystal 3, and an analyzer 4, a light emission part 10 emitting a light beam to the sensor part through an optical fiber, and a light reception part 12 for receiving the light beam having passed the sensor part through another optical fiber, the optical fiber used therein is a type having a core diameter allowing the beam to satisfy a range of 0.8 to 1.4 DEG for a beam edge angle of the beam on the LiNbO3 crystal. Alternatively, another type of optical fiber may be used in the light reception part 12, having a core diameter or NA which allows the light reception part 12 to selectively receive only partial beams satisfying the range of 0.8 to 1.4 DEG for the beam edge angle of the beam on the LiNbO3 crystal. With such structure, the optical voltage sensor can have improved temperature dependence and can be manufactured with ease and low cost.
Patent TW-451298-B (TW)
Title: Resist coating apparatus and resist coating method
Inventor: TANAKA YUKINOBU
IPC: H01L21/027
Filed: 2000-08-09
Granted: 2001-08-21
Abstract: Resist-ejecting nozzles are disposed on a front end of a nozzle arm, whereas a substrate is mounted on a spin chuck. The resist is ejected to the substrate from any one of the resist-ejecting nozzles, while the nozzle arm, together with the resist-ejecting nozzles, is turned to move relative to the substrate by a nozzle drive member. Simultaneously, the spin chuck together with the substrate is being driven to rotate by a substrate rotating member. As a result, any one of the resist-ejecting nozzles moves along a scroll path relative to the substrate, while the resist is spread on the substrate in the scroll form. Therefore even in the case that the resist is difficult to be dispersed, the resist can still be uniformly spread on the substrate by virtue of ejecting a smaller amount of the resist.
Patent TW-486745-B (TW)
Title: Silicon wafer and method of valuating silicon wafer and method of manufacturing silicon wafer
Inventor: KOMIYA SATOSHI
IPC: H01L21/205
Filed: 2000-08-25
Granted: 2002-05-11
Abstract: This invention provides a method for producing a silicon wafer having characteristics sufficient for semiconductor devices while doping nitrogen. In the method for producing a silicon ingot by pulling up a silicon single crystal by a Czochralski method, the silicon ingot is produced by pulling up the silicon single crystal under a condition such that the silicon ingot having a part in which the concentration of nitrogen is 5*10<SP>13</SP> to 1*10<SP>15</SP> atom/cm<SP>3</SP> is formed by nitrogen doping and then silicon wafers, each of which contains nitrogen in a concentration of 5*10<SP>13</SP> to 1*10<SP>15</SP> atoms/cm<SP>3</SP> and is used in non-oxidizing heat treatment, are cut out.
Patent TW-448272-B (TW)
Title: Gate valve
Inventor: WATANABE KAZUTO
IPC: F16K31/44
Filed: 2000-09-02
Granted: 2001-08-01
Abstract: A gate valve is provided to have a minifies drive part, and to reduce the weight and manufacture cost of the gate valve by this, an opening and closing mechanism 70 is only constructed by a pair of rotating elements. The opening and closing mechanism 70 is comprised by a first rocking linkage rod 80, a second rocking linkage rod 82, and a connecting linkage rod 84. The first rocking linkage rod is driven by a rotating cylinder 86 and proceeds with rocking motion. The seconds rocking connecting linkage is connected with a driving shaft 68, and the driving shaft 68 is used for an axis to proceed with rocking motion. And the first connecting linkage rod connects the second connecting linkage rod through the connecting linkage rod. When the rotating cylinder is driven to rock the first rocking linkage rod, the connecting linkage rod is driven and rocks the second connecting linkage rod. As a result, a cylinder body 66, which is connected with the seconds rocking linkage rod 2, can rock an proceed with opening or closing the port 72 of a flow way.
Patent TW-475249-B (TW)
Title: Device having good electrostatic discharge endurance
Inventor: LEE JIAN-HSING
IPC: H01L23/60
Filed: 2000-09-06
Granted: 2002-02-01
Abstract: The present invention proposes a device having good electrostatic discharge endurance. The device of the present invention comprises two NMOS devices having finger-like gates and an n-well, each NMOS device is disposed on a p-well. A heavily doped p-type region is disposed on the surface of n-well. By using the semiconductor controlled rectifier (SCR) formed of p-type heavily doped region, n-well, p-well and the source of NMOS, the device of the present invention can provide an excellent ESD protection. On the other hand, it can be used as the driving device of the input/output port. Also, the parasitic capacitance of the device of the present invention is pretty small, so it can be applied in the input/output port of the high-frequency integrated hybrid circuit.
Patent TW-475245-B (TW)
Title: Semiconductor device, external connecting terminal body structure and method for producing semiconductor devices
Inventor: KOSHIO YASUHIRO
IPC: H05K1/18
Filed: 2000-09-11
Granted: 2002-02-01
Abstract: The present invention provides a semiconductor device comprising: a through hole, or an insulating substrate which has a through hole with opening sidewall; an external connecting terminal embedded in the through hole; a wiring disposed on the insulating substrate with one end connecting to the external connection terminal; a wiring substrate having a connection part disposed on the other end of the wiring; a connection electrode formed at the main surface at one end, wherein the surface disposed with the connection electrode is opposed to the surface disposed with the wiring of insulating substrate, and the connection electrode is disposed such that the connection part is in-between and is electrically connected with the wiring; and the semiconductor device mounted on the wiring substrate. The semiconductor device of present invention has, for example, the insulating resin layer for covering the whole exposed part of the semiconductor device mounted on the wiring substrate to fill the gap between the wiring substrate and semiconductor device. Also, the present invention provides an external connecting terminal body structure and method for producing such semiconductor devices.
Patent TW-498422-B (TW)
Title: Electron beam irradiation processing method
Inventor: KOMORI MINORU
IPC: H01J33/00
Filed: 2000-09-15
Granted: 2002-08-11
Abstract: A process of irradiating high-energy electron beams on an item in cases when the distance between a vacuum tube type of electron beam tube and item is extended to permit processing of thick or large work-pieces. In particular, electron beams are irradiated from an electron beam tube (EB tube) 3 within a processing chamber 5 by way of a window 4 to subsequently irradiate an item 2, such as a resist or ink, that is applied to a work-piece 1. The atmosphere within the processing chamber 5 contains a gas having a lower density than that of air, such as helium, a mixture of nitrogen and helium or neon. The distance traveled by the electron beams from the electron beam tube can be extended and the area reached by the electron beams can be expanded since the atmosphere within the processing chamber contains a gas having lower density than that of air.
Patent TW-518639-B (TW)
Title: Heat treatment device, cooling treatment device and cooling treatment method
Inventor: OOKURA JUN
IPC: H01L21/00
Filed: 2000-11-16
Granted: 2003-01-21
Abstract: A device for cooling treatment of a substrate includes: a cooling plate for supporting the substrate; a cooling temperature adjustor which adjusts the cooling plate to a predetermined temperature; a temperature control member which controls the temperature of the cooling temperature adjustor based on a transfer function; a temperature sensor mounted on the cooling plate; and a control parameter changing member which changes the settings of at least one of the proportional action coefficient, the integral time and the differential time in the control parameters of the transfer function based on the temperature of the cooling plate that is detected by the temperature sensor after the substrate to be cooled is supported on the cooling plate. The excess characteristic can be improved and the recovery time for cooling to the predetermined temperature can be reduced. In addition, the usual off-set and so on can be suppressed and a high precision control of the temperature can be effected.