baber/WOPTO huggingface dataset:
Patent TW-570933-B (TW)
Title: Hydrophilic resin, absorbent article, and acrylic acid for polymerization
Inventor: FUJIMARU HIROTAMA
IPC: C08L33/02
Filed: 1999-03-01
Granted: 2004-01-11
Abstract: The invention provides a hydrophilic resin and an absorbent article, both of which display still less coloring and discoloring when preserved for a long time. The hydrophilic resin is any one of: (1) a hydrophilic resin, obtained by a process including the step of polymerizing a monomer component including a major proportion of either one or both of acrylic acid and its salt which merely have a content of at most 0.20 ppm in total of hydroquinone and benzoquinone; (2) a hydrophilic resin, comprising a major proportion of an acrylic polymer and a minor proportion of either one or both of hydroquinone and benzoquinone, with the hydrophilic resin further comprising a quinhydronation inhibitor of 10 to 1,000,000 times the total weight of hydroquinone and benzoquinone; (3) a hydrophilic resin, comprising a major proportion of an acrylic polymer and merely having a coloring degree (YI) of at most 20 after being left under conditions of the open system, 70 DEG C, 65% RH for 1 week; and (4) a hydrophilic resin, which is a water-absorbent resin and is surface-crosslinked or surface-impregnated with a polyhydric alcohol and displays pH of 5.5 or less in a physiological salt solution and has an absorption capacity of 20 g/g or more for a physiological salt solution under a load of 50 g/cm<2>. In addition, the absorbent article comprises the above hydrophilic resin.
Patent TW-546758-B (TW)
Title: Fabrication method of dielectric layer having air gap
Inventor: JU SHIN-KUEN
IPC: H01L21/76
Filed: 1999-04-16
Granted: 2003-08-11
Abstract: A fabrication method of dielectric layer having air gap is disclosed, which comprises forming a metal layer and patterned mask layer on the substrate sequentially; proceeding an etching step on the metal layer by using the patterned mask layer as the mask, so that the mask layer has protrusions at the upper periphery of the metal layer; then depositing a dielectric layer on the mask layer and forming plural air gaps on the dielectric layer.
Patent TW-486631-B (TW)
Title: Eliminate adjacent address collisions on a pipelined response bus
Inventor: OKPISZ ALEXANDER EDWARD
IPC: G06F13/42
Filed: 1999-05-28
Granted: 2002-05-11
Abstract: The apparatus eliminates early retrying of PAAM address conflicts on a system bus with multiple processors connected by a non-master processor, by comparing addresses of the current master processor to the next transaction to be issued by the non-master processor. If the addresses are the same and a PAAM window is detected, the non-master processor will switch the next transaction type to be issued, to a null type transaction. Even though the addresses match, the PAAM window is ignored for a null type transaction. The null transaction type insertion by the non-master processor reduces the latency of a PAAM self retried operation and avoids a possible livelock condition by breaking the processors out of the livelock. This allows the processors to stop retrying and leave the bus. The processors are able to immediately arbitrate instead of delaying past the astat window and increasing bus latency.
Patent TW-I241364-B (TW)
Title: Method for producing low defect silicon single crystal doped with nitrogen
Inventor: IIDA MAKOTO
IPC: C30B29/06
Filed: 1999-06-08
Granted: 2005-10-11
Abstract: There is disclosed a method for producing a silicon single crystal by growing the silicon single crystal by the Czochralski method, characterized in that the crystal is pulled at a pulling rate [mm/min] within a range of from V1 to V1+0.062xG while the crystal is doped with nitrogen during the growing, where G [K/mm] represents an average temperature gradient along the crystal growing direction, which is for a temperature range of from the melting point of silicon to 1400 DEG C, and provided in an apparatus used for the crystal growing, and V1 [mm/min] represents a pulling rate at which an OSF ring disappears at the center of the crystal when the crystal is pulled by gradually decreasing the pulling rate. The method of the present invention can produce silicon single crystal wafers exhibiting an extremely low defect density over the entire plane of the crystal, in particular, with no small pits, and having an excellent oxide dielectric breakdown voltage, based on the CZ method under widely and easily controllable production conditions at a high production rate and high productivity.
Patent TW-527575-B (TW)
Title: Method for driving plasma display panel
Inventor: SETOGUCHI NORIAKI
IPC: G09G3/291
Filed: 1999-06-17
Granted: 2003-04-11
Abstract: Disclosed is a method for driving a plasma display panel in which a plurality of first electrodes and second electrodes are arranged parallel to each other, a plurality of third electrodes are arranged to cross the first and second electrodes, and discharge cells defined with areas in which the electrodes cross mutually are arranged in the form of a matrix. According to the driving method, a reset period is a period during which the distribution of wall charges in the plurality of discharge cells is uniformed. An addressing period is a period during which wall charges are produced in the discharge cells according to display data. A sustain discharge period is a period during which sustain discharge is induced in the discharge cells in which wall charges are produced during the addressing period. The driving method in accordance with the present invention comprises a step of applying a first pulse in which an applied voltage varies with time so as to induce first discharge in the lines defined by the first and second electrodes, and a step of applying a second pulse in which an applied voltage varies with time so as to induce second discharge as erase discharge in the lines defined by the first and second electrodes. These steps are carried out during the reset period.
Patent TW-451593-B (TW)
Title: Programmably controlling video formats
Inventor: GRYSKIEWICZ PAUL S
IPC: H04N5/46
Filed: 1999-08-09
Granted: 2001-08-21
Abstract: A video controller may include at least one video input port which may be programmably configured to receive either RGB or non-RGB color space signals. The video controller may programmably operate in either an RGB or non-RGB mode. In this way, the number of color space conversions may be reduced in some embodiments. For example, where a television output device is coupled to the video controller, the video controller may provide a non-RGB output signal.
Patent TW-581664-B (TW)
Title: Dehydrated cereal food and process for its preparation
Inventor: DIOP SERIGNE
IPC: A23L7/10
Filed: 1999-09-02
Granted: 2004-04-01
Abstract: Dehydrated balanced cereal food based on a mixture of cereals and hydrolysed legumes, the said food having a dextrose equivalent (DE) of less than 4 and the process for its preparation.
Patent TW-450916-B (TW)
Title: A bicycle control system for assisting driving control of an elebike
Inventor: CHEN PING-HO
IPC: B62M23/02
Filed: 1999-09-03
Granted: 2001-08-21
Abstract: Disclosed is a bicycle control system for assisting driving control of an elebike, for controlling the elebike according to the input of the rider. The bicycle control system includes a torque sensor for sensing the pedaling torque input by the rider and for generating a torque output; a rotational speed sensor for sensing the rotational speed of a wheel and for generating a rotational speed output; a control circuit using the ""fuzzy principle"" to process the torque output generated by the torque sensor and the rotational speed output generated by the rotational speed sensor to produce a control voltage output; and a voltage coupler, that is connected among a handgrip, the output end of the control circuit, and the control end of the servo-motor through an analog voltage, for coupling the handgrip voltage generated by the handgrip and the control voltage output generated by the control circuit in a pre-determined method so as to generate a coupling voltage output for controlling the power output of the servo-motor.
Patent TW-434376-B (TW)
Title: Ball type stop cock
Inventor: KANEMURA TOKIYOSHI
IPC: F16K5/06
Filed: 1999-10-30
Granted: 2001-05-16
Abstract: To provide a ball type stop cock having simple connection with a pipe also a joint part having elastic function. This ball type stop cock is composed of a cock main body 1 and both side joint parts 2 and 3. A ball cock body 12 is housed in the main body barrel 11 in the main body 1, and turning the body 12 by 90 degree to open/close a flow passage. One side joint part 2 is a joint for a pipe having the inner surface as a friction surface, and a sleeve for increasing/decreasing and deforming a diameter. Another side joint part 3 is an expansion joint having a short pipe 31 movable in an axial direction.
Patent TW-419687-B (TW)
Title: Push button switch cover and method for manufacturing same
Inventor: ANDO HITOSHI
IPC: H01H13/48
Filed: 1999-11-09
Granted: 2001-01-21
Abstract: A push button switch cover capable of enhancing positional accuracy between a cover sheet and dish-shaped metal springs, thereby highly improving keying characteristics and reducing manufacturing cost. The cover sheet is provided on a front surface thereof with key tops and on a rear surface thereof with pressing projections in correspondence to the key tops. The dish-shaped metal springs are each bonded to a respective one of the pressing projections by an elastic adhesive section while keeping an apex of the dish-shaped metal spring abutted against a central portion of the pressing projection.
Patent TW-439210-B (TW)
Title: Method to form metal interconnect by dual damascene
Inventor: YE WEN-GUAN
IPC: H01L21/768
Filed: 1999-11-09
Granted: 2001-06-07
Abstract: The present invention relates to a method to form metal interconnect, especially by using dual damascene to control the shape and region of the metal interconnect accurately. First provide a semiconductor substrate and the first metal layer in part of the semiconductor substrate in the present invention. Then form the first dielectric layer on said semiconductor substrate and the first metal layer. Form a barrier layer. Form a photoresist layer on the barrier layer and cover part of the barrier layer. The first photoresist has the first photoresist pattern to form a trench region on the first metal layer, and also has the second photoresist pattern to form an etch stop region. Etch the barrier through the photoresist layer. Deposit the second dielectric layer on the barrier layer and the first dielectric layer, and cover the barrier layer and the first dielectric layer completely. Then, form another second photoresist layer on part of the dielectric layer. In the embodiment, this photoresist layer has the first photoresist pattern located above the first photoresist pattern of the first photoresist. It also has the second photoresist pattern located above the second photoresist pattern of the first photoresist. Also, the second dielectric layer is etched by using the second photoresist layer, and the first dielectric layer above the first metal layer is etched. The etching is done by using the first photoresist pattern of the first photoresist to thereby form a trench in the first dielectric layer and the second dielectric layer. Then form a barrier layer such as tantalum nitride in the trench formed in the first dielectric layer or the second dielectric layer. Then form a seed layer of copper alloy or aluminum copper alloy in the trench formed by the first dielectric layer or the second dielectric layer. Shortly afterwards, the trench formed in the first dielectric layer or the second dielectric layer is filled by copper alloy or aluminum copper alloy. Finally, the filled surface is polished by traditional chemical-mechanical polishing to expose the surface of the second dielectric layer, thereby the metal interconnect is formed by the dual damascene method.
Patent TW-430901-B (TW)
Title: Manufacturing method of internal poly oxidation layer
Inventor: CHIAN WEN-JENG
IPC: H01L21/31
Filed: 2000-01-07
Granted: 2001-04-21
Abstract: The present invention discloses a manufacturing method of internal poly oxidation layer, which is provided to eliminate the undercut phenomenon due to the non-uniform thickness of the internal poly oxidation layer generated by using plasma etching to form the internal poly oxidation layer in conventional manufacturing process. The present invention uses dielectric material with different etching selectivity to form the internal poly oxidation layer. Together with the use of the dry etching and wet etching, an internal poly oxidation layer with uniform thickness is formed.
Patent TW-416859-B (TW)
Title: Music game system, staging instructions synchronizing control method for same, and readable recording medium recorded with staging instructions synchronizing control program for same
Inventor: OKITA KATSUNORI
IPC: A63F13/814
Filed: 2000-02-15
Granted: 2001-01-01
Abstract: Playing progression information comprising sector Nos. is transferred between a drum rhythm game apparatus and a guitar rhythm game apparatus, thereby enabling staging operation to be made from each of the staging operating units while synchronizing the visual staging instructions to the players for the BGM music piece to be played at both the drum rhythm game apparatus and guitar rhythm game apparatus, thus allowing the game to be played in a state closer to reality where multiple players each have staging operating units as different insturment parts ,such as with an actual band, making the game even more enjoyable.
Patent TW-470641-B (TW)
Title: System and method for stair climbing in a cluster-wheel vehicle
Inventor: MORRELL JOHN B
IPC: A61G5/04
Filed: 2000-03-17
Granted: 2002-01-01
Abstract: A system and method for operating a device in ascending or descending stairs. The device has a plurality of wheels rotatable about axes that are fixed with respect to a cluster arm, where the cluster arm itself is rotated about an axis so that wheels rest on successive stairs. The wheels and cluster arms are controlled according to separate control laws by a controller. Whether the device ascends or descends the stairs is governed by the pitch of the device relative to specified front and rear angles. Shifting the center of gravity of the combination of device and payload governs the direction of motion of the device.
Patent TW-475058-B (TW)
Title: Pattern correcting device
Inventor: YAMANAKA AKIHIRO
IPC: H01J11/22
Filed: 2000-03-30
Granted: 2002-02-01
Abstract: To obtain a pattern correcting device capable of correcting even a defect having a relatively large defective width. This pattern correcting device has a rib vacancy defect part 23 which is applied with correction paste 24 by the paste application mechanism 3 till spilling occurs, the rib 22 is shaped by the scratch mechanism 5, the applied correction paste is dried by the IR light source 6, the spilt part of the correction paste 24 is cut by the cutting laser part 2, the spilt part is removed by the scratch mechanism 5, the correction waste is sucked and removed by the vacuum function, then it is baked by the semiconductor laser.
Patent TW-508752-B (TW)
Title: Dual work function gate conductors with self-aligned insulating cap
Inventor: GAMBINO JEFFREY P
IPC: H01L21/336
Filed: 2000-04-26
Granted: 2002-11-01
Abstract: A dual work function gats conductor with a self-aligned insulating cap and method for forming the same is provided. Two diffusion regions are formed in a substrate and a gate stack is formed over the substrate between the diffusion regions. The gate stack includes a gate insulating layer formed on the substrate and a layer of polysilicon on top of the gate insulating layer. The polysilicon layer may be doped n-type remain intrinsic. A barrier layer is formed on top of the polysilicon layer and a dopant source layer is formed on top of the barrier layer. The barrier layer contains a p-type dopant. The gate stack is enclosed by an insulating cap so that a diffusion contact can be formed borderless to the gate. Activation of the dopant source layer to dope a polysilicon layer can be delayed until a desired time.
Patent TW-484335-B (TW)
Title: Accoustic device in the form of a loudspeaker system
Inventor: PANZER JOERG
IPC: H04R1/40
Filed: 2000-06-22
Granted: 2002-04-21
Abstract: An acoustic device in the form of a loudspeaker system is described. The loudspeaker system has a plurality of distributed mode loudspeakers (1) each having a resonant bending wave panel (3) extending laterally of a principal axis (13) to define slots (11) therebetween. Exciters (5) are mounted on the panels (3).
Patent TW-457597-B (TW)
Title: Method for forming flash memory of ETOX-cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current
Inventor: JI MING-HUA
IPC: H01L21/336
Filed: 2000-07-04
Granted: 2001-10-01
Abstract: A method of forming an ETOX-cell in a semiconductor substrate is disclosed. The method begins with forming a p-well in the substrate. Then, a drain region and a source region is formed in the p-well. The drain region is of a first dopant type and the source region is of a second dopant type (i.e. same as the dopant type of the p-well). A floating-gate and tunnel oxide stack is formed above the p-well, the floating gate formed between the drain region and the source region and only after the drain region and the source region have been formed. The floating gate is doped with the same dopant type as the p-well. Finally, a control gate is formed above the floating-gate, the floating-gate and the control gate separated by a dielectric layer. The new ETOX cells can be organized into a NOR array, but with no need of source line connections. Each cell is programmed by band-to-band induced substrate hot-electron (BBISHE) at the source, and read by GIDL at the drain side.
Patent TW-561486-B (TW)
Title: Circuit with a non-volatile memory and method of erasing the memory a number of bits at a time
Inventor: CUPPENS ROGER
IPC: G11C16/02
Filed: 2000-07-31
Granted: 2003-11-11
Abstract: The threshold of a number of storage transistors is shifted in steps. After such a step, a collective current through the main current channels of a number of these storage transistors is sensed. The same gate-source voltage is applied to all these transistors during sensing. The collective current indicates whether the threshold of all transistors has been sufficiently shifted. If not, a further threshold shifting step is applied.
Patent TW-478015-B (TW)
Title: Lateral thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode
Inventor: SIMPSON MARK
IPC: H01L29/06
Filed: 2000-08-25
Granted: 2002-03-01
Abstract: A lateral thin-film silicon-on-insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral transistor device in an SOI layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being at least substantially insulated from the body region and drift region by an insulation region. In order to provide improved breakdown voltage characteristics, a dielectric layer is provided over at least a part of the insulation region and the gate electrode, and a field plate electrode is provided over at least a part of the dielectric layer which is in direct contact with the insulation region, with the field plate electrode being connected to an electrode of the lateral transistor device.
Patent TW-504648-B (TW)
Title: A universal magnetic stripe card
Inventor: INFOSINO WILLIAM J
IPC: G07F7/10
Filed: 2000-09-04
Granted: 2002-10-01
Abstract: A credit card sized universal card that a user may transform at will into a credit card, ATM card, employee access card, and/or any other conventional magnetic-stripe type card. To prevent the card from being used by anyone other than its owner, a security test may be presented each time the user tries to transform the universal card. The security test may involve, for example, electronically comparing the user's fingerprint with the owner's fingerprint. A database may be generated containing the fingerprints of the owners of universal cards.
Patent TW-559795-B (TW)
Title: A method of manufacturing flexible magnetic tape
Inventor: WALTHAM RICHARD MILLER
IPC: G11B5/85
Filed: 2000-09-22
Granted: 2003-11-01
Abstract: A method of manufacturing flexible magnetic tape having a permanently structured magnetic characteristic which varies from place to place in two different directions in the plane of the tape, includes: (a) coating a flexible substrate with a slurry comprising anisotropic magnetic particles; (b) moving the substrate and slurry coating relative to a first magnetic field having a field strength which varies with time in a first direction, thereby selectively orienting the said particles in areas spaced apart in a first direction; (c) subsequently moving the substrate and slurry coating relative to a second magnetic field having a field strength which varies with time in a second direction making an oblique angle with the first direction, such that the said magnetic particles are selectively oriented in spaced areas in both said first and said further directions, and (d) solidifying the slurry to fix the said particles in place.
Patent TW-457359-B (TW)
Title: Compound evaporation system and device thereof
Inventor: TSO MING-LI
IPC: F25B39/02
Filed: 2000-09-29
Granted: 2001-10-01
Abstract: A compound evaporation device comprises a compressor, a heat discharge divider, a main liquid line, a re-condensed tube, a vapor divider, and a primary vapor tube. The compressor is for compressing a gaseous refrigerant therein. The heat discharge divider communicates the compressor and has heat discharge branch tubes thereon surrounded by heat dissipating fins. The main liquid line communicates the heat discharge branch tubes. The re-condensed tube has a series of turns in alternate directions and communicates with the main liquid line. The expansion valve connects with the re-condensed tube. The vapor divider connects with the expansion valve and has vapor branch tubes surrounded by heat guide fins, and the heat guide fins and/or the vapor branch tube at a bottom thereof contact with the re-condensed tube. The primary vapor tube communicates the vapor branch tubes and the compressor to constitute a complete circuit line.
Patent TW-514669-B (TW)
Title: Apparatus for collecting dust in exhausting gas
Inventor: ISOZAKI SHINICHI
IPC: C21C5/40
Filed: 2000-10-31
Granted: 2002-12-21
Abstract: The object of the invention is to provide a compact apparatus for collecting a dust in an exhausting gas, having one or a plural of packed layers in which filtration mediums made of solid particles are packed., in order to keep a dust collecting efficiency high, with less amount of pressure loss. As means for solving the problem, in the apparatus, the exhausting gas including the dust passes through the filtration medium, and then the dust is removed. And also, the apparatus provides a draftable supporting plate, which inclines towards the exhausting gas duct for dust collecting and toward the exhausting gas flow. Furthermore, the apparatus provides a thin packed layer, where the solid particles are packed into, and whose surface has a free zone.