Patent SG-11201810128W-A (SG)
Title: Charge mirror-based sensing for ferroelectric memory
Inventor: GUO XINWEI
IPC: G11C11/22
Filed: 2017-04-24
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 1111111011111111101 1111111111111111111111101011011111111111H1111111111111110111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\"\" WO 2017/209858 Al 07 December 2017 (07.12.2017) WIP0 I PCT (51) International Patent Classification: (74) Agent: HARRIS, Philip W.; Holland & Hart LLP, P.O. Gl1C 11/22 (2006.01) Box 11583, Salt Lake City, Utah 84147 (US). (21) International Application Number: (81) Designated States (unless otherwise indicated, for every PCT/US2017/029099 kind of national protection available): AE, AG, AL, AM, (22) International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, 24 April 2017 (24.04.2017) CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, (25) Filing Language: English HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, (26) Publication Language: English KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (30) Priority Data: PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, 15/173,310 03 June 2016 (03.06.2016) US SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (71) Applicant: MICRON TECHNOLOGY, INC. [US/US]; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (72) Inventors: GUO, Xinwei; 8000 S. Federal Way, Boise, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, Idaho 83716-9632 (US). VIMERCATI, Daniele; 8000 S. UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, Federal Way, Boise, Idaho 83716-9632 (US). TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, — MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, = (54) Title: CHARGE MIRROR-BASED SENSING FOR FERROELECTRIC MEMORY 225-b = =555 575-n \j_ 535 lc/ 565 0 0 = 0 575 -•\ j_ • b 560 550 540 _ _ _ Al __ _ 545 580 = 105-c = _El i _ 585 min = MI = — 110-b . = = - L .. ... i •N _i 5 0 = 525 515 —17,...\ 410-a 560 12 c — = 220-a 505 520 510 I -..\ ‘\"- 570 = = = — Il GC kr) GC 01 (57) : © difference between ei ---- the full charge IN charge to an 1-1 © the logic state ei 205-a1 —PL j r - 210-a Methods, two difference amplification of the memory cell. logic states of a ferroelectric between systems, and devices the two states capacitor. The signal on the \" of a selected memory cell. The charge mirror may transfer the memory cell polarization 415-b 415 for a sensing memory /\".. 530 -c aer 405-a FIG. 5 scheme that cell or cells is described. The scheme employs a charge mirror to extract amplification capacitor J extracts may 500 the full or nearly full remnant polarization charge then be compared with a reference voltage to detect C [Continued on next page] WO 2017/209858 Al MIDEDIMOMOIDEIRMEM0010101101HUMODEVOIS TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(H)) — as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3))