baber/WOPTO huggingface dataset:
Patent TW-467808-B (TW)
Title: Direct pressure type method of and device for continuously supplying and jetting abrasive
Inventor: MASE KEIJI
IPC: B24C3/00
Filed: 1999-05-26
Granted: 2001-12-11
Abstract: To supply a constant quantity of abrasive from a polish retrieving tank to a nozzle continuously in a stable condition and make easy and certain setting of the jetting amount of abrasive as desired. Abrasive 34 in a retrieving tank 26 is dropped into supply holes 24 to fill them located on the circumference of a polish supplying board 20 rotating horizontally, blown up by a jetting compressed air 31 from a sendout receipt hole 22 confronting the rotational locus of the supply holes 24 to be carried to a polish supplying pipe via 30 a sending/receiving pipe 29, fed with pressure by a pressurized compression air 32 to be supplied to a nozzle 11, and spouted therefrom onto a work to be processed. The desired supply amount of polish can be set easily, by for example, regulating the rotating speed of the polish supplying board.
Patent TW-500763-B (TW)
Title: Antistatic polymeric compositions
Inventor: WYLIN FRANKY
IPC: C08K5/00
Filed: 1999-06-10
Granted: 2002-09-01
Abstract: The surface resistivity of polycarbonate resin is reduced and thus the antistatic properties improved by the inclusion of esters of branched fatty acids and polyhydroxylic compounds having at least one and desirably at least two free hydroxyl groups e.g. glycerol mono-iso-stearate. The reduction in surface resistivity can be achieved without a significant increase in haze or yellowness.
Patent TW-426864-B (TW)
Title: Dielectric ceramic composition
Inventor: FURUKAWA YUKIKO
IPC: H01B3/12
Filed: 1999-07-15
Granted: 2001-03-21
Abstract: An object of the present invention is to provide a dielectric ceramic composition in which a volume changing ratio of the electrostatic capacity is within ±0.3% over a wide temperature range of -55 to +125 DEG C, it satisfies the NPO characteristics regulated by EIA standard, the dielectric constant is high as 75 or more and the Q value of 2000 or higher and it is capable of subjecting to sintering at a low temperature of 1100 to 1150 DEG C. The dielectric ceramic composition of the present invention is a (Ba Ca Sr Nd Gd)TiO3 series composition and to the composition was added and contained 1.0 to 5.0% by weight of ZnSiTiO5, 1.0 to 5.0% by weight of ZnSi2TiO7 or 1.0 to 5.0% by weight of CaSiTiO5 based on the weight of the composition.
Patent TW-476005-B (TW)
Title: Lens sheet and manufacturing process therefor
Inventor: OOKAWA MAKOTO
IPC: G02B5/02
Filed: 1999-08-05
Granted: 2002-02-11
Abstract: A lens sheet comprises a transparent base (2) made of a transparent resin sheet and a lens part (3) provided on at least one side of the base (2), made of an active energy beam-curing resin, such as an ultraviolet-curing resin, and including a plurality of lens units. A relaxation layer (1) having a thickness which is 1 to 30% of the height (H) of the lens part (3) is interposed between the transparent base (2) and the lens part (3). The relaxation layer (1) is made of an active energy beam-curing resin and integrated with the lens part (3). The refractive index of the transparent substrate is smaller than the refractive index of the lens part (3). The lens unit is comprised of a prism row each prism of which has a triangular cross section. The thickness of the relaxation layer (1) is, for example, 1 to 10 μm. The prism row is arranged in an interval of 10 to 150 μm. The apex of the prism row is 50 to 75 DEG. A prism having such a relaxation layer (1) is made by injecting an active energy cured composition into the space between a face of forming a lens transfer pattern of the lens mold and a face of the transparent substrate, thereby forming a composition layer between the lens mold and the transparent substrate; using a clamping roll installed on the other face of the transparent substrate to made the thickness of the composition uniform; using a pressure adjustment mechanism to adjust the clamping pressure of the clamping roll, thereby forming a relaxation layer (1) with a desired uniform thickness. Since the thickness of the relaxation layer (1) is desirably determined, the surface shape of the lens part is not deformed despite of the polymerization shrinkage of the active energy beam-curing composition and no optical defects such as spot patterns and glaring are produced.
Patent TW-512138-B (TW)
Title: A metal/glass-ceramic functional gradient material with a thermal barrier coating
Inventor: KUO DONG-HAU
IPC: C04B35/50
Filed: 1999-09-29
Granted: 2002-12-01
Abstract: A new prototype of a metal/ceramic functional gradient material (FGM) is developed successfully. This material was invented with a combination of techniques including FGM, glass-ceramic, hot pressing, and thermal spraying. The material structure of this new FGM is: thermal-sprayed ZrO2/BaAl2Si2O8 glass-ceramic/(BaAl2Si2O8+Ni)FGM/Ni. This material is unique and innovative from the point-view of material design. BaAl2Si2O8 glass-ceramic which can be densified at low temperatures below 1000 DEG C was integrated with metallic nickel to form a metal/ceramic FGM at the first time. This FGM can be fabricated easily at a temperature of 1000-1200 DEG C. From this FGM design, the drawbacks of oxidation and spalling occurred at commercial thermal barrier coatings can be improved. After thermally sprayed stabilized ZrO2 was covered on the BaAl2Si2O8 side of the FGM, this coating provided the function of thermal barrier and increased surface hardness and errosion-resistance of the FGM.
Patent TW-521239-B (TW)
Title: Method and apparatus for real-time on-off contrast ratio optimization in liquid crystal displays
Inventor: LIBSCH FRANK R
IPC: G09G3/36
Filed: 1999-08-30
Granted: 2003-02-21
Abstract: An apparatus provides optimal on-off contrast ratio in a liquid crystal display panel. The apparatus includes a capacitive temperature sensing device for sensing the temperature of liquid crystal display pixels and having an output voltage according to an applied input voltage and a sensed temperature; a monitoring device including differentiator and sample and hold circuit for obtaining a peak voltage corresponding to a maximum change of the voltage output from the temperature sensing device; and a device for measuring a difference between the peak voltage with a predetermined reference voltage and outputting a signal representing the difference. Heat is consequently applied to the liquid crystal display panel in accordance with a measured temperature difference. Advantageously, the capacitive temperature sensing device is formed as part of the liquid crystal display element.
Patent TW-449772-B (TW)
Title: Method and apparatus for cooling substrates
Inventor: RAAIJMAKERS IVO
IPC: H01L21/00
Filed: 1999-10-05
Granted: 2001-08-11
Abstract: Methods and apparatuses are provided for cooling semiconductor substrates prior to handling. In one embodiment, a substrate and support structure combination is lifted after high temperature processing to a cold wall of a thermal processing chamber, which acts as a heat sink. Conductive heat transfer across a small gap from the substrate to the heat sink speeds wafer cooling prior to handling the wafer (e.g., with a robot). In another embodiment, a separate plate is kept cool within a pocket during processing, and is moved close to the substrate and support after processing. In yet another embodiment, a cooling station between a processing chamber and a storage cassette includes two movable cold plates, which are movable to positions closely spaced on either side of the wafer.
Patent TW-I221841-B (TW)
Title: Benzoylguanidine derivatives with advantageous properties, processes for preparing them and their use in the production of pharmaceutical compositions
Inventor: BLECH STEFAN MATTHIAS
IPC: C07D213/81
Filed: 1999-09-22
Granted: 2004-10-11
Abstract: The present invention relates to novel benzoylguanidine derivatives of general formula I, processes for preparing them and their use in the preparation of pharmaceutical compositions. Benzoylguanidine derivatives of general formula I, wherein R1 denotes a phenyl group unsubstituted or substituted by a group selected from the group consisting of C1-4-alkyl, C1-4-alkoxy, halogen, trifluoromethyl and pyrrolyl, or pyrrolyl, furyl or pyridyl in the form of the free bases or the corresponding acid addition salts with pharmacologically acceptable acids.
Patent TW-533219-B (TW)
Title: Degradable polyurethane resin
Inventor: IKEDA KAN
IPC: C08G71/04
Filed: 1999-09-29
Granted: 2003-05-21
Abstract: The invention is a degradable polyurethane resin obtained by reacting 2,5-/2,6-diisocyanatomethylbicyclo[2.2.L]heptane and/or a modified compound thereof with polyol comprising a single compound, mixture or copolycondensate selected from the group consisting of (A) polyhydroxycarboxylate polyol, (B) aliphatic polyester polyol and (C) saccharides, or (D) straight or branched polyol formed by condensation of (A) and/or (B) with aliphatic polyhydric alcohol having functionality of three or more, and the polyurethane resin has hydralyzability and biodegradability, is excellent in rigidity and elasticity in combination with flexibility as compared with conventionally known biodegradable resin, and can provide formed articles having outstandingly high elasticity and elongation and other unprecedented properties.
Patent TW-494226-B (TW)
Title: A vibration damper assembly for a structure gyroscope resonator
Inventor: FELL CHRISTOPHER PAUL
IPC: G01C19/5684
Filed: 1999-10-01
Granted: 2002-07-11
Abstract: A vibration damper assembly (7) for a ring resonator (1) of a vibrating structure gyroscope has a female portion attachable to a body (8) of the gyroscope so as to have limited resiliency with respect to the body (8) in a direction substantially perpendicular to the body. A male portion is fixedly attachable at one end to a resonator (1) of the gyroscope, projectable into the female portion and fixedly attachable at its other end in and to the female portion. The assembly permits damping of vibratory movement of the resonator (1) in a direction substantially perpendicular thereto whilst retaining stiffness and freedom to vibrate for the resonator (1) in the plane thereof.
Patent TW-444242-B (TW)
Title: Wafer support unit in semiconductor manufacturing apparatus
Inventor: TAKAGI YOUJI
IPC: H01L21/687
Filed: 1999-10-28
Granted: 2001-07-01
Abstract: This invention describes a wafer support device (14), which is characterized in comprising a wafer support body (22) having a supporting area (26) for supporting wafers; and a plurality of lift pieces (36), each extending from the outer side of the wafer supporting area of the wafer support body to the inner side of the area, having an inclined surface inclined toward a lower inner side on the front surface, and capable of moving vertically between a position below the front surface of the wafer support body and a position above the front surface.
Patent TW-449527-B (TW)
Title: Aligner for belt-like work
Inventor: HONMA JYUN
IPC: G03B27/42
Filed: 1999-10-30
Granted: 2001-08-11
Abstract: To expose plural rows of mask patterns on a belt-like work without making an aligner larger in size and without replacing a roll. When belt-like work Wb is conveyed, and a 1st exposure area in a 1st row comes to a projecting position on a work stage 3, the work Wb is vacuum-sucked and a mask M and the work Wb are aligned to apply exposing processing to the 1st exposure area. Then, the work Wb is held by work suction mechanisms 8 and 8' and moved in a direction orthogonal to a conveying direction by driving moving mechanisms 9 and 9' so that a 2nd exposure area in a 2nd may come to the projecting position on the stage 3. The mask M and the work Wb are aligned to apply exposing processing to the 2nd exposure area. The conveying of the work Wb and the movement of the work Wb in the direction orthogonal to the carrying direction are repeated, whereby exposing the 1st row and the 2nd row of the work Wb.
Patent TW-418142-B (TW)
Title: Composite nickel fine powder and method for preparing the same
Inventor: TOYOSHIMA YOSHIHARU
IPC: B22F9/02
Filed: 1999-11-23
Granted: 2001-01-11
Abstract: Composite nickel fine powder herein disclosed is characterized in that at least one member selected from the group consisting of oxides and complex oxides which comprise at least one metal element having an atomic number ranging from 12 to 56 or 82 and belonging to Group 2 to 14 of Periodic Table is carried on the surface of metal nickel fine particles. The composite nickel fine powder can be prepared by, for instance, adding an aqueous solution containing at least one member selected from the group consisting of water-soluble salts of the foregoing metal elements to a slurry containing metal nickel fine particles or surface-oxidized metal nickel fine particles; and then adjusting the PH of the mixture with an acid or an alkali to thus carry the metal oxide and/or complex oxide derived from the water-soluble salt on the surface of the metal nickel fine particles.
Patent TW-441051-B (TW)
Title: Chip scale surface mount package for semiconductor device and process of fabricating the same
Inventor: ZANDMAN FELIX
IPC: H01L21/301
Filed: 1999-12-02
Granted: 2001-06-16
Abstract: This semiconductor surface mount package is relatively inexpensive to produce and has a footprint that is essentially the same size as the die. A conductive substrate is attached to the back side of  a wafer and is in electrical contact with a terminal on the back side of each die in the wafer. A nonconductive overcoat is formed and patterned on the front side of the wafer, leaving a portion of the passivation layer and the connection pads for the dice exposed, each of the connection pads being coated with a solderable metal layer. The assembly is then sawed in perpendicular directions along the scribe lines between the dice, but the saw cuts do not extend all the way through the substrate, which remains intact at its back side. The parallel cuts in one direction are broken to produce die strips which are mounted, sandwich-like, in a stack, with one side of the strips exposed. A metal layer is sputtered or evaporated on one side of the stack; the stack is turned over and a similar process is performed on the other side of the stack. The resulting metal layers are deposited on front side of the die and extend along the edges of the die to the edges and back side of the substrate. The metal is not deposited on the surfaces of the overcoat. The strips in the stack are then separated, and the saw cuts in the perpendicular direction are broken to separate the individual dice. A thick metal layer is plated on the sputtered or evaporated layers to establish a good electrical connection between the front side and the terminal on the back side of each die. The resulting package thus includes a metal layer which wraps around the edges of the die to form an electrical connection between a location on the front side of the die and the conductive substrate. The package is essentially the same size as the die. In an alternative embodiment, a nonconductive substrate is used and vias are formed in the substrate and filled with metal to make electrical contact with the terminal on the back side of the die.
Patent TW-440999-B (TW)
Title: Method for preventing the formation of cracking in integrated circuit
Inventor: LIN GENG-JU
IPC: H01L21/76
Filed: 1999-12-24
Granted: 2001-06-16
Abstract: The present invention discloses a method for preventing the formation of cracking in an integrated circuit, which comprises forming a BPSG layer on a substrate; using a plasma enhanced chemical vapor phase deposition to form a silicon oxide layer with a high compression stress on the BPSG layer; using a conventional high tensile stress film deposition to form a silicon nitride by a low pressure chemical deposition or a high temperature process such as annealing or rapid thermal processing (RTP). The present invention uses a silicon oxide layer as a buffer layer. Therefore, the formation of cracking in the BPSG layer due to a high temperature flow characteristic and the interaction of high stress film in the subsequent process in the conventional technique can be avoided.
Patent TW-453020-B (TW)
Title: Motor position driving method without magnetic pole detecting apparatus
Inventor: TSAI MING-CHI
IPC: H02P7/29
Filed: 1999-12-28
Granted: 2001-09-01
Abstract: The present invention relates to a kind of motor position driving method without magnetic pole detecting apparatus, and mainly uses voltage-source frequency converter in combining with appropriate switching technique to directly control the magnetic flux of brush-less synchronous motor stator coil and generate arbitrary stator space magnetic field vector so as to attract the rotator of permanent magnetic type brush-less synchronous motor and reach the purpose of step-type open-loop positioning control. The method stated above does not require any apparatus for detecting magnetic pole position, and can make each sort of permanent magnetic type synchronous motor to obtain the purposes of micro step positioning control and governing speed control. In addition, good governing speed control also can be obtained when this method is applied in the inductive motor. Because no device for detecting magnetic pole is required, under the cooperation of appropriate software program, the invented frequency conversion technique can be suitable for use in positioning and governing speed control of permanent magnetic type brush-less motor, and in governing speed control of the AC inductive motor.
Patent TW-445350-B (TW)
Title: Pressure/flow rate control valve
Inventor: HOSONO MASAYUKI
IPC: F15B11/028
Filed: 2000-03-02
Granted: 2001-07-11
Abstract: Disclosed is a pressure/flow rate control valve comprising a pressure-adjusting section (32) having a valve plug (82) for reducing the pressure of a pressure fluid flowing through a clearance between a hole (94) and itself, a stem (86) which is displaceable integrally with the valve plug (82) and which is installed with a packing (89), and a spring member (76) which is fastened to one end of the stem (86), for pressing the valve plug (82) toward an annular projection (92) formed on an inner wall surface of a first valve body (12).
Patent TW-492111-B (TW)
Title: Semiconductor integrated circuit device and manufacture thereof
Inventor: SAITO MASAYOSHI
IPC: H01L21/302
Filed: 2000-03-27
Granted: 2002-06-21
Abstract: In a SOG film 16 in an upper part of a gate electrode 9 of a MISFET (Qs, Qn, Qp), a polysiloxane SOG film 16 is thermally treated in a high temperature of about 800 DEG C. Moreover, an interlayer insulation film between the wirings (54, 55, 56, 62, 63) of the upper layer is a polysiloxane SOG film 57 which has not been subjected to the abovementioned high temperature treatment.
Patent TW-508588-B (TW)
Title: Semiconductor integrated circuit device
Inventor: ITOH KIYOO
IPC: G11C11/4076
Filed: 2000-03-28
Granted: 2002-11-01
Abstract: A memory cell including a storage MOSFET and a write transistor with a word line connected to a control terminal of the above write transistor, wherein a data line selection circuit selects one of a plurality of read data lines for connection to either of first and second common data lines, the read data line is precharged to a first potential during a first period, the above word line is selected during a second period and is discharged to a second potential by the storage MOSFET in an on state of the memory cell, the first and second common data lines are precharged to a third potential which is about in the middle of the first and second potentials during the first period, and, during the second period, a read signal appearing from the read data line selected by the data line selection circuit to one of the common data lines is amplified using the precharge potential of the other common data line as a reference potential.
Patent TW-442904-B (TW)
Title: Method for forming two gate silicon-oxide layers with different thicknesses in integrated circuit
Inventor: YU MO-CHIUN
IPC: H01L21/76
Filed: 2000-04-14
Granted: 2001-06-23
Abstract: This invention discloses a kind of method for forming two gate silicon-oxide layers with different thicknesses in integrated circuit. The fabricating process includes the following procedures. At first, the area isolation is formed on the semiconductor substrate so as to separate the thicker dielectric area from the thinner dielectric area, in which the thicker dielectric area is used to form thicker silicon oxide layer and the thinner dielectric area is used to form a thinner silicon oxide layer. After that, a silicon nitride layer is formed on the whole semiconductor substrate and is followed by using photolithographic technique and etching technique to remove the silicon nitride layer on the thicker dielectric layer. Then, the semiconductor substrate is dipped into hydrogen fluoride acid solution and a layer of thicker silicon oxide is formed on the thicker dielectric layer region by using thermal oxidation method. In addition, a layer of thinner silicon oxide containing nitrogen is formed simultaneously on the thinner dielectric layer region.
Patent TW-438651-B (TW)
Title: Manufacturing method of pneumatic H-stems
Inventor: HUANG SHING-LIANG
IPC: B25B23/16
Filed: 2000-05-15
Granted: 2001-06-07
Abstract: Disclosed is a manufacturing method of pneumatic H-stems, particularly the pneumatic H-stem being separated into two halves. Positioning pillars and positioning holes are provided at corresponding locations of the two halves of the pneumatic H-stem to allow easy assembly of the two halves of the pneumatic H-stem to be as a unity. Then, brazing is used to complete the manufacturing, so as to reduce plenty complicated machining processes to reduce manpower, working hour, and material wastage, thereby improve industrial applicability.
Patent TW-500947-B (TW)
Title: Wiring pattern of liquid crystal display apparatus, liquid crystal display apparatus and electronic machine
Inventor: TANAKA KAZUHIRO
IPC: G02F1/136
Filed: 2000-07-11
Granted: 2002-09-01
Abstract: The technical subject of the present invention is to raise the quality of the display image by making the streak unevenness inconspicuous. The solving means is described as follows. Pixel electrodes 234 corresponding to each color of RGB are formed to have a triangular arrangement of RGB by being shifted respectively in the row direction (in X-direction in the figure) by half pitch. One data line 212 is shared in use in the columnar direction in the pixel electrodes corresponding to the same color, and is formed to enclose four side edges of the pixel electrodes 234. Thus, the parasitic capacitance of each pixel electrode 234 is uniformly distributed to each pixel.
Patent TW-459293-B (TW)
Title: Forming method of metal oxide semiconductor field effect transistor with recessed-gate
Inventor: TZENG HUNG-HUEI
IPC: H01L21/28
Filed: 2000-10-05
Granted: 2001-10-11
Abstract: The present invention discloses a kind of forming method for metal oxide semiconductor field effect transistor (MOSFET) with recessed-gate. At first, an isolating region and source/drain region are formed on a semiconductor substrate. Then, the first dielectric layer and the second dielectric layer are continually formed on the semiconductor substrate stated above, and an anisotropic etching technique is used to form a trench on the stated semiconductor substrate. After forming a silicon oxide layer through the use of thermal oxidation technique, an anisotropic etching technique is used to form the first spacer on the sidewall of the trench stated above. Then, a gate dielectric layer and the gate plug are formed on the bottom wall of the trench. And, the source electrode, drain electrode and recessed-gate electrode of MOSFET are formed.