baber/WOPTO huggingface dataset:
Patent TW-294610-B (TW)
IPC: B01J37/03
Filed: 1993-11-10
Granted: 1997-01-01
Abstract: PCT No. PCT/EP93/02385 Sec. 371 Date Jun. 12, 1995 Sec. 102(e) Date Jun. 12, 1995 PCT Filed Sep. 2, 1993 PCT Pub. No. WO94/06557 PCT Pub. Date Mar. 31, 1994A nickel/silica catalyst having a Ni/SiO2 molar ratio of 10 to 2.5, preferably 6 to 3, contains zinc in an amount of at least 500 ppm (based on the nickel) and maximally in a molar ratio Zn/SiO2 of 1. Additionally, the catalyst may comprise Mg in a molar ratio Mg/Ni of 0.05-0.15, max. (Mg+Zn)/Sio2 molar ratio is 1. Also the catalyst may comprise Al in a molar ratio Al/Si of 0.05-0.5. Also methods of preparing the catalyst and its use for hydrogenating oils and fats have been described.
Patent TW-384302-B (TW)
Title: Flame retardant silicone compositions
Inventor: HARA HIROYASU
IPC: C08K5/18
Filed: 1994-02-08
Granted: 2000-03-11
Abstract: To a silicone composition comprising (a) an organopolysiloxane having at least two alkenyl groups in a molecule, (b) an organohydrogen polysiloxane having at least two hydrogen atoms each directly attached to a silicon atom in a molecule, and (c) a platinum catalyst, (d) a compound having a phenyl group and a secondary or tertiary amino group directly attached thereto is added to render the composition flame retardant. The total content of inorganic group polysiloxane D3~D10 in (a) and (b) is controlled under 1000 ppm and without reinforced fillers. The invented composition cures into a transparent product having improved flame retardancy, meeting the UL standard, and is suitable for use in the protection of electronic parts like ICs and hybrid ICs.
Patent TW-311944-B (TW)
IPC: B29C48/06
Filed: 1995-03-24
Granted: 1997-08-01
Abstract: PCT No. PCT/EP95/01024 Sec. 371 Date Nov. 4, 1996 Sec. 102(e) Date Nov. 4, 1996 PCT Filed Mar. 16, 1995 PCT Pub. No. WO95/25000 PCT Pub. Date Sep. 21, 1995A process of making a fiber-reinforced polymeric material comprises sliding a fiber bundle over an arcuate support surface (2) in the line of the arc, and injecting into the bundle a molten or liquid polymer through a plurality of slots (4) in the surface, each slot being transverse to the bundle. The process allows effective impregnation of materials, at relatively high production speed and low capital costs.
Patent TW-289062-B (TW)
Title: Elevator-type multistory parking garage
Inventor: OURA TAKESHI
IPC: E04H6/12
Filed: 1995-11-01
Granted: 1996-10-21
Abstract: An elevator-type multistory parking garage, mainly comprising: an outer frame composed of two side racks, the inner side of each rack fitted with a fork platform to support the front and rear wheels of automobile; two guide rails installed on automobile's entrace/exit side and inner side along the ascending and decending path at the two ends of each side rack; the ascending and decending device capable of moving up and down by means of guide rollers; the system characterized by: the guide rails on the entrance/exit side being fitted on the outer side relative to the side rack, and the guide rails on the inner side being fitted on the inner side relative to the side rack.
Patent TW-285786-B (TW)
IPC: H02M1/42
Filed: 1995-11-30
Granted: 1996-09-11
Abstract: PCT No. PCT/EP95/04837 Sec. 371 Date Sep. 29, 1997 Sec. 102(e) Date Sep. 29, 1997 PCT Filed Dec. 8, 1995 PCT Pub. No. WO96/19036 PCT Pub. Date Jun. 20, 1996A mains rectifier circuit for power supply units, in particular for switched-mode power supplies, having a full-wave rectifier (D1 . . . D4) which is connected to the mains voltage and having a smoothing capacitor (CL) which is connected downstream of said full-wave rectifier (D1 . . . D4), the smoothing capacitor being charged at a clock frequency, which is considerably higher than the mains frequency, via the series circuit formed by a boost inductance (LB) and a diode (DS), in the case of which series circuit the junction point between the boost inductance and the diode is connected to earth via a controlled switch (SB), the smoothing capacitor (CL) and the load (SNT) are connected to the full-wave rectifier (D1 . . . D4), an auxiliary rectifier (D1', D2') is provided, from which the series circuit formed by the boost inductance and the diode leads to the smoothing capacitor, and the switch is controlled via a drive circuit (AB) such that additional charging current is supplied to the smoothing capacitor, via the boost inductance, in time periods around the zero crossings of the rectified half-cycles.
Patent TW-327151-B (TW)
Title: Reaction injection molding
Inventor: GREGORY A HILL
IPC: C08G18/66
Filed: 1996-05-27
Granted: 1998-02-21
Abstract: A process for making a contact lens using RIM process.
Patent TW-318880-B (TW)
Title: A connecting type turning furnace
Inventor: ITO KATSUHIRO
IPC: F23G5/00
Filed: 1996-10-15
Granted: 1997-11-01
Abstract: A connecting type turning furnace mainly has an axial tube structure for transferring disposal at the other direction for burning after the disposal being thrown into the furnace. It is characterized in that a plurality of tank, each having a right opening and a left opening, are lined up and the openings of the adjacent tanks are connected but allowed to turn freely. A turning actuating device is set outside each of the tanks for receiving the signals form a temp inspecting device inside the furnace. This temp inspecting device detects the temp inside the tanks near the disposal intake and compare it with the temp inside the tanks at the other end.
Patent TW-323240-B (TW)
Title: The piping apparatus of liquid injection system
Inventor: JANG CHII-WENN
IPC: B08B9/02
Filed: 1996-10-30
Granted: 1997-12-21
Abstract: A piping apparatus, is suitable for liquid injection system to control reacting liquid output by reacting liquid providing device, N2 gas output by factory N2 providing device and He gas output by factory He gas providing device, and by these to proceed purging the piping and exhausting reacting liquid. The composition devices of piping apparatus include: (a) 1st turning device, includes a 1st valve and check valve that are connected to output piping of factory He providing device, and includes a bypass and 2nd valve that are connected to output piping of factory N2 and He providing device; (b) 2nd turning device, includes 1st valve that is connected to output piping of reacting liquid providing device; A 2nd valve and check valve are connected to output piping of factory N2 providing device; And a 3rd valve is connected to piping in between chamber and pump; In which, during normal operation, open 1st valve of 1st turning device, and close 2nd valve, and through piping to send He to chamber. During purging of the piping, close 1st valve in 1st turning device and open 2nd valve. Such that the output piping of factory He providing device was closed, and inject N2 into piping of liquid injection system for purging the piping. At this time, the check valve will prevent N2 from reversing current. And when liquid injection system is suspended work for maintenance, exhaust reacting liquid from piping, then following steps will be proceeded: (1) Close 1st valve in 2nd turning device for closing output piping of reacting liquid providing device; (2) Open 3rd valve in 2nd turning device for exhausting reacting liquid from piping; (3) Close 3rd valve in 2nd turning device, and open 2nd valve for guiding N2 into piping; (4) Repeat step (2) and (3) at least one time for repeatedly purging the piping; (5) Close 2nd valve in 2nd turning device, and open 3rd valve, simultaneously close 1st valve in 1st turning device, and open 2nd valve; And (6) By using He discharge controller to set He discharge to maximum for purging the injection controlling valve and related piping.
Patent TW-320766-B (TW)
Title: Manufacturing process of MOS transistor with trench gate electrode of shallow source/drain
Inventor: NI CHERNG-TSONG
IPC: H01L21/8232
Filed: 1996-11-26
Granted: 1997-11-21
Abstract: A manufacturing process of MOS Transistor with Trench Gate Electrode of Shallow Source/Drain includes the following procedures: formation of an isolation process of field oxide to define a active area; formation of a first polysilicon layer on a substrate and the field oxide; formation of a first dielectric layer on the first polysilicon layer; etching of the first dielectric layer to define a gate electrode; formation of a second dielectric layer on top of the first dielectric layer and the first polysilicon layers; formation of a third dielectric layer on the second dielectric layer; anisotropic etching of the third dielectric layer and the second dielectric layer for creating a spacer; etching of the first polysilicon layer and further deep etching into the substrate to form a groove; planting of ion to fully proceed the threshold voltage adjustment planting over the exposed active area and to prevent anti punch through planting; formation of a gate oxide layer by thermal oxidation and formation of a polysilicon oxide layer; formation of a source and a drain created by diffusing the ions of the first polysilicon layer to the substrate as a result of high heat diffusion; and depositing of a second polysilicon layer to generate the gate electrode.
Patent TW-442532-B (TW)
Title: Methacrylate resin blends
Inventor: SHAH NILESH
IPC: C08L33/04
Filed: 1996-12-31
Granted: 2001-06-23
Abstract: The invention encompasses a new methacrylate resin blend composition, and a method of making the blend composition, having improved solvent craze resistance. The new blend composition contains a methacrylate matrix resin, particles of a single layer polymer, and optionally, an acrylic multi-layer polymer. Particles of the single layer polymer derived from 50% or more methyl methacrylate, and having weight average molecular weight (Mw) at least 120% of the Mw of the methacrylate matrix resin component of the blend, the particles having a diameter of from 50 to 500 nanometers, have been discovered to confer a solvent craze resistance value to the methacrylate resin blend which is at least twice the solvent craze resistance value of the methacrylate resin absent particles of the single layer polymer. Solvent craze resistance of the blend may be improved by as much as 10-fold or more over the solvent craze resistance of the methacrylate matrix resin alone.
Patent TW-330339-B (TW)
Title: A semiconductor assembly
Inventor: MOWES HARRO
IPC: H01L23/495
Filed: 1997-02-04
Granted: 1998-04-21
Abstract: A semiconductor assembly includes a semiconductor chip (12) having several lead pads on at least one of chip surfaces (14) and several of lead fingers (16), which partially extending over at least one of chip surfaces and glue-bonded (26, 28, 32) on the chip (12). The features of the component are that the lead fingers extending over the upper chip surface (14) are glued to the chip (12) by an adhesive pattern (26, 28, 32) matching the position of the lead fingers (16), so that only a small portion of the upper chip surface (14) is covered by adhesive.
Patent TW-326066-B (TW)
Title: Rotary regenerative air preheaters
Inventor: MARK E BROPHY
IPC: F28D19/04
Filed: 1997-02-14
Granted: 1998-02-01
Abstract: A rotary regenerative air preheater, which comprises a rotor, a number of enclosure plates surrounding the rotor, at least one axial seal plate which is fixed between the rotor and the enclosure plate along an axial direction, and an adjustable device capable of fixing the axial seal plate on the enclosure plate, which comprises: (a) a pair of adjustment rods located on both sides of the center line which extend through the enclosure in the direction of the axial seal plate, and further through the threaded adjustable device, and can be connected to the enclosure plates upon rotation of the rotor, in which the adjustment rods can move inward or outward by rotating the threaded adjustable device; (b) a device capable of connecting the adjustment rods with the axial seal plate along the center line, and the center line of the axial seal plate being capable of moving toward or away from the rotor by the adjustment rods; (c) an adjustable pressure device located on both sides of the center line and connected with the axial seal plate, which may connect with the enclosure when the rotor rotates, and may move toward or away from the rotor so as to adjust the locking of the axial seal plate on both sides of the center line.
Patent TW-360689-B (TW)
Title: Molded product of carbon black
Inventor: HASHIGUCHI TADASHI
IPC: C09C1/56
Filed: 1997-03-27
Granted: 1999-06-11
Abstract: A press molded product of carbon black having a density &rge; (g/cc) which is at least ρ=8.190x10<SP>-3</SP>D-3.824x10<SP>-3</SP>L+0.516 and at most ρ=3.265x10<SP>-3</SP>D-3.334x10<SP>-3</SP>L+1.173, wherein D is the arithmetic mean particle size (nm) of carbon black by an electron microscope, and L is the DBP oil absorption (ml/100 g).
Patent TW-354828-B (TW)
Title: Condensation nucleus counter employing supersaturation by thermal differentiation
Inventor: SCHILDMEYER FREDERIC C
IPC: G01N15/04
Filed: 1997-08-08
Granted: 1999-03-21
Abstract: A condensation nucleus counter for detecting particles entrained in a sample gas stream, the counter comprising: a conduit adapted to allow the sample gas stream to flow therethrough; a saturator having an inlet in fluid communication with the conduit, the saturator containing a vaporized fluid; a condenser in fluid communication with the saturator; means, in thermal contact with the sample gas stream, for decreasing entropy associated with vaporized fluid positioned proximate to the inlet to produce supersaturation; a detector in data communication with the sample gas stream; and a condenser installed between the detector and the saturator.
Patent TW-336323-B (TW)
Title: Current-mode sense amplifier
Inventor: CHU MING CHEUNG
IPC: G11C7/06
Filed: 1997-08-21
Granted: 1998-07-11
Abstract: A sort of current-mode sense amplifier, including: a current mirror image circuit having input branches (NT1, R1) and output branches (NT3), being one end of the input branch (NT1, R1) connected to the end of the input signal (BL) to be amplified by the current and the other end connected to the first power supply end 9VSS), being one end of the output branch (NT3) through the first controlling transistor (PT1) for being connected to the second power supply end (VDD) and the capacitor (C1, C2), and at the other end being connected to the first power supply end (VSS), and the second controlling transistor (NT2) from a connection nod (N) among the current mirror circuit (NT1, R1, NT3) to the first power supply end (VSS), having the controlling transistor (PT1, NT2) been controlled before the input signal (BL) is being applied to the control signal (PREB1, PREB1Q) of the capacitor (C1, C2).
Patent TW-360760-B (TW)
Title: Elastomeric element valve
Inventor: WALTON HERBERT H
IPC: G05D16/06
Filed: 1997-08-21
Granted: 1999-06-11
Abstract: A fluid control valve having a valve body, a cage, and a flexible elastomeric diaphragm with a formed convolution to fully open the cage opening. An elastomeric diaphragm regulator with a flow diverter in the fluid flow path to reduce fluid flow separation and thereby reduce the required flow recovery area before pressure throttling. A raised knife edge seat located on the cage top in a position of stagnant fluid flow to reduce the build-up of contaminants on the seat. An elastomeric diaphragm regulator with a valve actuator coupled to a guided valve stem attached to the regulator diaphragm.
Patent TW-411480-B (TW)
Title: Electrical component
Inventor: KAHR WERNER
IPC: H01C7/02
Filed: 1997-12-22
Granted: 2000-11-11
Abstract: Electrical component having a component body (1), which defines the component function and is retained and afforded electrical contact in a housing (2) by means of spring contact elements (3, 4), in which the spring contact elements (3, 4) are supported at two supporting points (3-1, 3-2; 4-1, 4-2) in the housing (2).
Patent TW-360545-B (TW)
Title: Dermatologic preparation
Inventor: IMAI YUKIE
IPC: A61K8/30
Filed: 1997-12-23
Granted: 1999-06-11
Abstract: A dermatologic preparation which is reduced in side effects, has excellent percutaneous absorbability, and contains as the active ingredient an unsaturated fatty acid, which is a triglyceride represented by general formula (1), wherein one or two R1, R2, and R3 each represents a residue of a long-chain unsaturated fatty acid and the remainder represent(s) residue(s)of a medium-chain fatty acid. The triglyceride is preferably represented by formula (1) wherein one of R1, R2, and R3 represents a residue of along-chain unsaturated fatty acid and the remainder represent(s) residue(s) of a medium-chain fatty acid. The long-chain unsaturated fatty acid is selected from the group consisting of eicosapentaenoic acid, docosahexaenoic acid, docosapentaenoic acid, arachidonic acid, α-linolenic acid, γ-linolenic acid, linoleic acid, and dihomo-γ-linolenic acid. The most desirable is the eicosapentaenoic acid residue or docosahexaenoic acid residue. The triglyceride is one obtained from a long-chain unsaturated fatty acid and/or a derivative thereof each having a purity of preferably 90% or higher, more preferably 95% or higher.
Patent TW-429160-B (TW)
Title: Method for the separation of gas mixtures by pressure-swing adsorption in a two-bed adsorber system
Inventor: REISS GERHARD
IPC: C01B13/02
Filed: 1998-01-12
Granted: 2001-04-11
Abstract: The present invention relates to an improved and simplified method, which is also favourable as regards energy, for the adsorptive separation of gas mixtures, in particular of air, by means of inorganic adsorbents, in particular by means of molecular-sieve zeolites, by pressure-swing adsorption in a two-bed adsorber system.
Patent TW-461126-B (TW)
Title: Indium gallium nitride light emitting diode
Inventor: JOU MING-JIUN
IPC: H01L33/00
Filed: 1998-04-15
Granted: 2001-10-21
Abstract: A conducting and transparent oxide layer replaces Ni/Au layer of prior art as the light transmitting layer of an indium gallium nitride light emitting diode according to the invention. The oxide layer possesses good conductivity and, therefore, has excellent current spreading performance. Light transmittance of the oxide is over 90% in the visible light region, which is much higher than that of Ni/Au layer of prior art, and light transmitting efficiency is thus greatly increased. In addition, an ultra-thin contact layer with high carrier concentration is formed on the gallium nitride contact layer by diffusion or ion implantation process. In one of the embodiment of the present invention, semiconductor having high carrier concentration can be grown to serve as contact layer. In another embodiment of the present invention, an ultra-thin metal is used as contact layer and forward voltage is lowered effectively when indium tin nitride is formed on such contact layer by sputtering or electron gun evaporation process.
Patent TW-389837-B (TW)
Title: Ear type clinical thermometer
Inventor: KONNO TOMOYASU
IPC: G01K13/00
Filed: 1998-07-13
Granted: 2000-05-11
Abstract: An ear type thermometer for metering a body temperature includes a thermometer body (2), and a probe (6) mounted in the thermometer body (2) and adapted to be inserted into an ear. The probe (6) is provided with a probe cover (11). A screwing member (9) is provide for fixing the probe cover (11) on the probe (6).
Patent TW-422783-B (TW)
Title: Thermally conductive interface, method of attaching a heat-generating source to a thermal dissipation member using the interface, and electrical assembly formed by such method
Inventor: BUNYAN MICHAEL H
IPC: H01L23/36
Filed: 1998-07-29
Granted: 2001-02-21
Abstract: A thermally conductive interface, which may be in the form of a double-sided, pressure sensitive adhesive tape, disposable intermediate a heat-generating source having a first heat transfer surface formed of a first material having a low surface energy, and a thermal dissipation member having a second heat transfer surface which is formed of a second material having a surface energy substantially higher than the surface energy of the first material, and which is disposable opposite the first heat transfer surface of the heat-generating source in a spaced-apart, heat transfer adjacency therewith. The interface includes a first pressure sensitive adhesive (PSA) surface which is bondable under pressure to at least a portion of the first heat transfer surface of the heat-generating source, and an opposing second pressure sensitive adhesive (PSA) surface bondable under pressure to at least a portion of the second heat transfer surface of the heat-generating source. The first PSA surface is presented from a layer of a thermally-conductive, first pressure sensitive adhesive composition, preferably silicone-based, having an affinity to the first heat transfer surface of the heat generating source. In turn, the second PSA surface is presented from a layer of a second pressure sensitive adhesive composition, preferably acrylic-based, different from the first composition and having an affinity to the second heat transfer surface of the thermal dissipation member. The interface is particularly adapted for bonding a plastic packaged electronic component to a metal heat sink.
Patent TW-395095-B (TW)
Title: All CMOS very high-speed 8-bit flash analog to digital converter
Inventor: JANG YI-LUNG
IPC: H01L27/00
Filed: 1998-08-14
Granted: 2000-06-21
Abstract: A very high speed 8-bit flash analog-to-digital converter designed in full CMOS technique, an analog-to-digital converter device completed in single CMOS chip, the image signal of such converter is pinned down on a reference voltage through a horizontal signal, inputted directly to one end of 256 dual-input high speed comparators. In correspondence with the amplitude difference produced by the input image signal with different signal sources, to adjust the upper and lower limiting voltage values of 256 resistors in series with identical value and characteristic to accommodate it. The upper and lower limiting voltages are generated in the following way, first to convert the reference voltage into a first current through the voltage current transformation, such first current passes through a first digital-controllable current reflector to produce a first out-flow current flowing into the upper limit voltage end of the first resistor series and a first in-flow current which flows out from the lower limit voltage end of the first resistor series. The first current passes through a second digital-controllable current reflector to produce a second out-flow and in-flow currents which are connected to the second resistor separately connected to the lower limiting voltage and the first reference voltage. This could produce positive and negative voltage on the second resistor through controlling the interchange of the flowing in ends of the second current with the flowing out ends of the second current. Such 256 high-speed comparators are equipped with the device of automatic direct current bias zero, and to prevent the high frequency anti-transmission, and accurately control the activating time of the clock through a ring-type oscillator, so it has excellent immunity toward the change of temperature and MOS characteristic. Consequently it has a high standard production yield.
Patent TW-494090-B (TW)
Title: Red light glass material for laser light emitting diode
Inventor: WANG JINN-LUNG
IPC: C03C4/10
Filed: 1998-08-21
Granted: 2002-07-11
Abstract: A red light glass material for laser light emitting diode (LED) contains about 35 wt% of As, about 5-20 wt% of T1, and about 35-50 wt% of S, which is subjected to the conventional non-oxidation sintering treatment, followed by a rapid quench to form a substantially amorphous glass material. The glass material has characteristics of a high transmittance of red light, being easy to be processed and resistant to aging, and thus it is suitable for use as a packing material of the light emitting head of the laser LED.