baber/WOPTO huggingface dataset:
Patent TW-364279-B (TW)
Title: Cooling system of a heater
Inventor: FUJIMOTO AKIHIRO
IPC: G01R31/28
Filed: 1998-03-03
Granted: 1999-07-11
Abstract: Cooling system of a heater having construction of high cooling effect and less deterioration by time against a plurality of electronic devices loaded in a printed circuit substrate is provided. For this aim, in a cooling system which cools off a plurality of heater by radiation plate, elasticity seat of the heat conductivity which is connected to the plurality of heater, diffusion cloth of the heat which is laminated on the elasticity seat, heat conduction spring which is connected to the diffusion cloth of the heat coated with heat conduction grease, the heat conduction spring connecting to the radiation plate coated with heat conduction grease, and fixation means which loads so as to seal by the radiation plate and the elasticity seat, are provided.
Patent TW-374048-B (TW)
Title: A partial polishing device of CMP
Inventor: LIN BIH-TIAO
IPC: H01L21/304
Filed: 1998-03-04
Granted: 1999-11-11
Abstract: A chemical mechanical polishing is employed to planarize the semiconductor wafer comprising a polishing pad having one surface for polishing the semiconductor wafer and its diameter is smaller than that of the semiconductor wafer; the polishing head is used to orient the semiconductor wafer in place; while in polishing operation, the polishing head will press hard on the semiconductor wafer which is further attached to the polishing pad.
Patent TW-385510-B (TW)
Title: Manufacturing method of semiconductor device and film carrier tape
Inventor: NOBUAKI HASHIMOTO
IPC: H01L23/12
Filed: 1998-03-16
Granted: 2000-03-21
Abstract: This invention provides a method for manufacturing a CSP type semiconductor device which uses a bonder of a general-purpose gang bonding type to improve the yield, which includes the following steps: forming a pseudo film carrier tape (20); positioning the tape (20) and a semiconductor chip (12) in such a manner that the pseudo junction parts (26a) face the electrodes (13); positioning the pseudo junction parts (26a) and electrodes (13) while observing through holes (22); removing the pseudo film carrier tape (20) and positioning a film carrier tape (30) at the same location.
Patent TW-432628-B (TW)
Title: Manufacturing method and structure for microwave component
Inventor: JUANG KUEN-RUNG
IPC: H01L21/768
Filed: 1998-04-02
Granted: 2001-05-01
Abstract: The inventive method includes: forming an insulation area on the first surface of the wafer; implanting ions in a semiconductor wafer; applying heat treatment to the wafer so that the implanted ions and the wafer will react to form an etching stop layer in the wafer; forming an insulation layer on the etching stop layer; forming an inductor on the insulation layer; then, forming a passivation on the inductor; next, etching the wafer from the second surface of the wafer to the etching stop layer so as to form a recess in the wafer and the recess is aligned with the inductor; and, forming a grounding plate on the second surface of the wafer.
Patent TW-399141-B (TW)
Title: Fluid cooled discharge screw adapted for use in a furnace
Inventor: BOY WILLIAMS A
IPC: F27B9/38
Filed: 1998-04-24
Granted: 2000-07-21
Abstract: A fluid cooled conveying screw adapted for rotary hearth furnaces.  A plurality of solid alternating single and double flights are affixed to an outer barrel.  The single flights are at least partially cladded to withstand the rigors of the furnace.  The double flights extend partially down the barrel.
Patent TW-358153-B (TW)
Title: Air liquefaction separator
Inventor: WATANABE AKIMASA
IPC: F25J3/04
Filed: 1998-05-02
Granted: 1999-05-11
Abstract: The air separation plant is provided with a housing for containing cryogenic equipments, at least one free-standing column to be disposed in the housing, at least one column to be disposed in the housing on a frame constituting the housing, and a powdery thermal insulator packed in the housing, having a packing density to be obtained by packing under atmospheric pressure; the free-standing column being set to have a first natural frequency of not more than 0.7 times or not less than 1.0 times as large as that of the housing. Further, the packing density of the powdery thermal insulator is 55 to 80 kg/m<3>.
Patent TW-425679-B (TW)
Title: Semiconductor device and method of manufacturing the same
Inventor: MIYAKI YOSHINORI
IPC: H01L23/495
Filed: 1998-05-26
Granted: 2001-03-11
Abstract: The occurrence of package crack in the vicinity of the rear surface at a die pad part is suppressed by setting the outer dimensions at the die pad part of a lead frame to be smaller than those of a semiconductor chip to be mounted thereon and the occurrence of package crack in the vicinity of the major surface of the semiconductor chip is suppressed by forming an organic layer exhibiting high adhesion to a resin composing the package body on a surface protective film (final passivation film) covering the uppermost layer wiring of the semiconductor chip.
Patent TW-401528-B (TW)
Title: Liquid crystal display apparatus
Inventor: OTA MASAYUKI
IPC: G02F1/1343
Filed: 1998-07-30
Granted: 2000-08-11
Abstract: A liquid crystal display of which the display operation is controlled by an electric field parallel to the substrate plane, of which the angle of view is equivalent to that of a cathode-ray tube and which has an excellent uniform luminance with little display irregularity. The display is provided with a pair of transparent substrates opposed to each other through a liquid crystal,means for controlling the initial orientation of the liquid crystal, and a pixel electrode and a counter electrode spaced from each other in each pixel region of the surfaces on the liquid crystal sides of the transparent substrates, and controls the quantity of light transmitted through the liquid crystal between the pixel electrode and the counter electrode in each pixel region by the electric field between the electrodes. The display is provided, in the light-transmitting region in each pixel region, with a region where the angle between the direction of electric field between the pixel electrode and the counter electrode and the direction of initial orientation and another region where the angle between the direction of electric field and the direction of initial orientation is different from that in the region.
Patent TW-503148-B (TW)
Title: Transporter for lead frames and transport assembly
Inventor: ZWEERS JUHANNES GERHARDUS AUGU
IPC: B65G13/00
Filed: 1998-08-07
Granted: 2002-09-21
Abstract: The invention relates to a transporter for lead frames, comprising: two rotatable wheels with mutually facing running surfaces for engaging a lead frame between the wheels, a frame supporting the wheels, and an actuating cylinder engaging on at least one wheel for mutual displacement of the wheels. The invention also relates to an assembly of two such transporters.
Patent TW-425663-B (TW)
Title: Schottky diode forming method in integrated circuit
Inventor: HUANG JR-FENG
IPC: H01L29/872
Filed: 1998-09-17
Granted: 2001-03-11
Abstract: The present invention discloses a method for forming a Schottky diode in an integrated circuit which employs the shallow trench via structure to solve the problem of Schottky diode leakage that firstly, forming a dielectric oxide on the silicon substrate comprising an electric component doping area; then, conducting via etching to open the via for an extended over etching period; and, depositing a Pt metal layer and forming metal silicide at the interface between the Pt metal layer and silicon substrate; thereafter, removing the Pt metal not forming the metal silicide; lastly, forming a barrier and a metal layer.
Patent TW-464986-B (TW)
Title: Method of manufacturing a semiconductor device
Inventor: TAKASE SHUNJI
IPC: H01L29/78
Filed: 1998-10-28
Granted: 2001-11-21
Abstract: A method of manufacturing semiconductor device capable of reducing the number of processing steps, comprises: forming a gate electrode on a semiconductor substrate; follow by covering the gate electrode with a first insulator layer; and forming a second insulator layer on the first insulator layer. Thereafter, simultaneously forming a first contact opening connected to the surface of the semiconductor substrate and a second contact opening connected to the upper surface of the gate electrode, in which the second contact hole has a diameter larger than that of the first contact hole. Subsequently, bury a conductive layer in the first contact hole and use this conductive layer to form a sidewall on the lateral walls of the second contact hole. Then, remove first insulator layer from the bottom of the second contact hole.
Patent TW-414867-B (TW)
Title: Keyboard testing system
Inventor: GUO LI-YOU
IPC: G01R31/28
Filed: 1998-11-25
Granted: 2000-12-11
Abstract: A keyboard testing system by which keyboard function of an electronic equipment is tested, wherein a testing device is connected with the keyboard by electrical signal for testing the micro-processor in the keyboard to be tested and then, a light signal sensor for testing the indicator lamp therein, and a key pressing testing mechanism for pressing and testing the keys therein by touch-pressing or triggering with pneumatic spurting. The keyboard to be tested is moved widthways with a traverse transposing mechanism to make sure that every key can be pressed and tested by the pressing testing mechanism. When an error or failure in any one of the said steps is detected, an alarm device is driven by the testing device to indicate alarm signal or light, and the signal of detecting error or testing result will be recorded and saved in the testing device in order to automatically test every function of the keyboard and record the result of testing.
Patent TW-446635-B (TW)
Title: Flame retardant EMI shielding materials and method of manufacture
Inventor: BUNYAN MICHAEL H
IPC: H05K9/00
Filed: 1999-03-08
Granted: 2001-07-21
Abstract: An flame retardant, electrically-conductive EMI shielding material and method, the material being particularly adapted for use in fabric-over-foam EMI shielding gasket constructions. In construction, a generally planar, porous fabric member is provided as having at least an electrically-conductive first side and a second side defining a thickness dimension therebetween. A curable layer of a fluent, flame retardant composition is applied under a predetermined hydrodynamic pressure and viscosity to at least a portion of the second side of the fabric member. The hydrodynamic pressure and viscosity of the composition are controlled to delimit the penetration of the layer into the fabric member to a depth which is less than the thickness dimension of said fabric member. The layer then is cured to form a flame retardant surface coating on the second side of the fabric member such that the first side of said fabric member remain selectrically-conductive.
Patent TW-394811-B (TW)
Title: Scroll hydromachinery
Inventor: KUROIWA HIROYUKI
IPC: F04C18/02
Filed: 1999-03-25
Granted: 2000-06-21
Abstract: A plurality of compression chambers are formed between first and second spiral bodies 1 and 2, and refrigerant discharge timing advancing means is provided for advancing the timing at which refrigerant is discharged from a first compression chamber 4 which is one of a pair of compression chambers located nearest to the center, relative to the refrigerant discharge timing of the second compression chamber 5. The refrigerant discharge timing advancing means includes an extension 1c of the first spiral body 1 and an opening advancing portion 3a of a discharge port 3.
Patent TW-432541-B (TW)
Title: Method for forming ultra-short channel MOSFET with self-alignment silicide contact
Inventor: WU SHIE-LIN
IPC: H01L21/335
Filed: 1999-04-15
Granted: 2001-05-01
Abstract: The present invention provides a method for fabricating a deep short channel MOSFET device by a self-alignment silicide contact method, which comprises growing an oxide layer on a silicon substrate; depositing an undoped polysilicon layer; depositing a first dielectric layer and a second silicon layer and defining a gate region on a second silicon layer; etching the gate region to reduce the width thereof so that the width of the gate region of the second silicon layer is reduced to a dimension that can not be reached by a conventional photolithography process; using the remaining second silicon layer as the first dielectric layer of mask etching; using the remaining second silicon layer and the first dielectric layer as the undoped polysilicon layer of mask etching to form an ultra-short channel gate; using a chemical vapor phase deposition to deposit a PSG film and etching back to form a PSG side spacer; removing the first dielectric layer; depositing a precious metal or a high temperature resistant metal on all regions; implanting a high dosage of As or P ions through the metal layer to the substrate to form a source/drain region; applying a two-stage RTP process to form a silicide contact to produce an ultra short channel n-type MOSFET.
Patent TW-410428-B (TW)
Title: Process for improving sidewall coverage capability in filling metal to trench
Inventor: SUEI SHIAU-LIN
IPC: H01L21/768
Filed: 1999-04-26
Granted: 2000-11-01
Abstract: The present invention discloses a process for improving sidewall coverage capability in filling metal to trench, which is charatcterized in that, after a thick barrier layer is formed, a plasma treatment is performed to remove an overhang structure at the edge of the trench. Thus, the metal layer can be smoothly filled into the trench, so as to form an interconnection without generating voids.
Patent TW-466467-B (TW)
Title: Plasma display device and method of driving plasma display panel, having first and second representing units
Inventor: KUWABARA TAKESHI
IPC: G09G3/288
Filed: 1999-05-17
Granted: 2001-12-01
Abstract: A plasma display device has a first representing unit, a second representing unit, a judging unit, and a selector, The first representing unit lights only one of even display lines and odd display lines which represent one frame, and the second representing unit lights only the other one of the even display lines and the odd display lines. The judging unit judges a condition for an image to be displayed, and the selector selects whichever of the first representing unit and the second representing unit is used to display an image, based on the results of judgment made by the judging unit. Consequently, the service lives of phosphors and a protecting film can be extended and sticking in a screen can be prevented.
Patent TW-476171-B (TW)
Title: Arrangement of contact pairs for compensating near-end crosstalk for an electric plug connection
Inventor: GWIAZDOWSKI MICHAEL
IPC: H01R24/64
Filed: 1999-05-17
Granted: 2002-02-11
Abstract: The invention relates to an arrangement of contact pairs (1, 2;3, 6;4, 5;7, 8;201, 202;203, 206;204, 205;207, 208) for an electric plug connection for compensating near-end crosstalk, having contact pairs which are nested inside one another, especially for an RJ-45 plug connection, in which, for the purpose of compensation, the contacts (4, 5) are crossed over, the crossover point (11) being placed in the spring-mounted part of the contacts (1, 2;3, 6;4, 5;7, 8) of the socket.
Patent TW-457209-B (TW)
Title: Leak-resistant container
Inventor: CHUANG SAIN KEAT
IPC: B65D41/26
Filed: 1999-06-09
Granted: 2001-10-01
Abstract: An apparatus for retaining and dispensing liquid including a container and a cap. The container is provided with a hollow body for retaining liquid, and a dispensing end for pouring. The cap is provided with a spout which depends from the closed end wall of the cap and adapted for telescopic insertion into the neck of the bottle. This spout may act not only as a measuring and pouring structure, but also as a leak-resistant seal by having a thickened base which pushes the neck radially outwards upon closure of the cap. The bottle is preferably of molded plastic, with a locking member being molded onto the shoulder of the bottle. Unlocking can only be effected by squeezing the cap in a manner so as to release a ridge in the cap from the locking member.
Patent TW-428246-B (TW)
Title: Adjustment pumping plate design for the chamber of semiconductor equipment
Inventor: TIEN YU-CHUNG
IPC: C23C16/44
Filed: 1999-07-31
Granted: 2001-04-01
Abstract: A semiconductor fabrication chamber is disclosed which contains (a) a main chamber; (b) a baffle member separating the main chamber into a first chamber and a second chamber, (c) a vacuum pump to pump gas through the main chamber; and (d) a computer. The first chamber contains a gas inlet, a metering device, and a supporting member to support a wafer to be fabricated, and the second chamber contains a gas outlet and a first pressure gauge. The baffle member contains at least one adjustable opening which is controllable by the computer. Prior to a fabrication process, such as plasma etching, a pressure difference between the first pressure gauge and a temporary pressure gauge installed inside the second chamber is calculated and compared against a standard value, and the computer will adjust the opening of the baffle plate so as to minimize such pressure difference, which is related to the deposition of particulate matters on the opening. A flow meter can also be installed inside the second chamber for adjustment of the baffle plate opening during the fabricating process.
Patent TW-428220-B (TW)
Title: Temperature-humidity controller for semiconductor equipment and controlling method thereof
Inventor: SUNG MYEON-CHANG
IPC: F24F3/16
Filed: 1999-10-13
Granted: 2001-04-01
Abstract: A temperature-humidity controller for a semiconductor equipment comprises a housing; an inlet pipe for introducing processing air, which has a discharging portion for flowing the air into an inner portion of the housing; a water supplying means for supplying water into the inner portion of the housing so as to contact with the processing air from the discharging portion of the inlet pipe thereby simultaneously performing dehumidifying and humidifying processes; a cooling means for cooling the water at a dew point; a heating means for heating the air at a desired temperature, which is dehumidified and humidified by the water supplying means; an outlet pipe for supplying the heated air to the semiconductor equipment.
Patent TW-457702-B (TW)
Title: Analogue switch
Inventor: GOLDMAN RICHARD
IPC: H01L29/73
Filed: 1999-10-19
Granted: 2001-10-01
Abstract: The present invention relates to an integrated bipolar transistor device, in which the saturation voltage is sought to be reduced. More specifically, an integrated NPN bipolar transistor is formed with oxide insulation, and the normal direction of current flow is from the emitter to collector, and an integrated PNP bipolar transistor is formed with oxide insulation, and the normal direction of current flow is from the collector to emitter.
Patent TW-542832-B (TW)
Title: Cycloalkyl-substituted aminomethylpyrrolidine derivative
Inventor: TAKEMURA MAKOTO
IPC: C07D401/04
Filed: 1999-11-24
Granted: 2003-07-21
Abstract: This invention provides a quinolone derivative which exerts strong antibacterial action upon various bacteria including resistant strains and has high safety. Particularly, it relates to a compound having a structure of formula (I), its salts and hydrates thereof: {R1 and R2: hydrogen, alkyl; n: 1 to 4; Q: following structure (II): [R3: alkyl, alkenyl, halogenoalkyl, cyclic alkyl, aryl, heteroaryl, alkoxyl, alkylamino; R4: hydrogen, alkylthio; R5: hydrogen, amino, hydroxyl, thiol, halogenomethyl, alkyl, alkenyl, alkynyl, alkoxyl; X1: halogen, hydrogen, A1: nitrogen, structure of formula (II): (X2: hydrogen, amino, halogen, cyano, halogenomethyl, halogenomethoxyl, alkyl, alkenyl, alkynyl, alkoxyl; R4 and R3 or X2 and R3 may together form a cyclic structure; Y: hydrogen, various ester forming groups]}.
Patent TW-455476-B (TW)
Title: Process for making disposable trunks-type garment
Inventor: MURAKAMI MASAKI
IPC: A41B9/04
Filed: 1999-12-07
Granted: 2001-09-21
Abstract: This invention aims to provide a process for making disposable trunks-type garment particularly of good appearance. Two webs 51, 52 of same width are bonded together along peripheries of a plurality of apertures 53, 54 serially arranged in same shape and size on respective one sides of the respective webs 51, 52; these two webs 51, 52 are folded back along center lines transversely dividing the respective webs 51, 52 onto themselves; opposite side edges 57, 57 as well as 60, 60 of these respective two webs 51, 52 are bonded together; and finally these two webs 51, 52 thus bonded together are cut along first and second imaginary lines G-G, H-H extending transversely of the webs 51, 52.
Patent TW-493088-B (TW)
Title: Fluorescence fiber optic sensor
Inventor: JOU CHENG
IPC: G02B6/00
Filed: 1999-12-09
Granted: 2002-07-01
Abstract: A novel fluorescence fiber-optic sensor, which measures the fluorescence signal at the distal end rather than the proximate end of the optical fiber, is proposed and demonstrated experimentally. There are advantages of this optical arrangement over the conventional fiber optic sensor. It has a simpler optical configuration and a higher signal to noise ratio (SNR) of the detected fluorescence signal.
Patent TW-482798-B (TW)
Title: Crystal aromatic polyester resin pre-foamed particles
Inventor: HIRAI TAKAAKI
IPC: B32B5/18
Filed: 1999-12-10
Granted: 2002-04-11
Abstract: Pre-foamed particles of crystalline aromatic polyester-based resin which is excellent in foaminess fusion bonding during foaminess molding, and an in-mold foamed product being improved particularly in fusion bonding ratio and mechanical strength and an foamed laminate using the pre-foamed particles. The pre-foamed particles have a bulk density of 0.01 to 1.0 g/cm<SP>3</SP> and a peak temperature of crystallization of 130 to 180 DEG C, and can be suitably used in in-mold foaming molding. The in-mold foamed product is formed by the in-mold foaming molding of the above pre-foamed particles, and the foamed laminate is prepared by laminating a film or sheet of an aromatic polyester-based resin directly on the above in-mold foamed product and forming them in one piece.
Patent TW-439120-B (TW)
Title: A quantum thin line producing method and semiconductor device
Inventor: FUKUSHIMA YASUMORI
IPC: H01L29/788
Filed: 2000-01-26
Granted: 2001-06-07
Abstract: A nanometer-size quantum thin line is formed on a semiconductor substrate of a Si substrate or the like by means of the general film forming technique, lithographic technique and etching technique. By opportunely using the conventional film forming technique, photolithographic technique and etching technique, a second oxide film that extends in the perpendicular direction is formed on an Si substrate. Then, by removing the second oxide film that extends in the perpendicular direction, a second nitride film located below the film and a first oxide film located below the film by etching, a groove for exposing the Si substrate is formed. Then, a Si thin line is made to epitaxially grow on the exposed portion of the Si substrate. The quantum thin line is thus formed without using any special fine processing technique. The width of the groove can be accurately controlled in nanometers by controlling the film thickness of the second oxide film that is formed by oxidizing the surface of the second nitride film.