baber/WOPTO huggingface dataset:
Patent TW-406430-B (TW)
Title: Semiconductor integrated circuit apparatus with the alignment mark fixed to lower layer
Inventor: OKAMURA KENJI
IPC: H01L27/108
Filed: 1998-12-30
Granted: 2000-09-21
Abstract: A semiconductor DRAM apparatus comprises: a semiconductor substructure (SB) substantially comprising the circuit device of the memory cell (27/32) and the peripheral circuit; and a semiconductor substructure (ISB) non- substantially comprising the appendix pattern, for example the alignment mark (30) formed on the interlayer insulated layer (28). The alignment mark has a bone skeleton portion (30a) to penetrate the above-mentioned interlayer insulated layer and to be fixed on the main surface of the silicon substrate (21). Therefore, the alignment mark could be maintained on the settling position during the process period.
Patent TW-417279-B (TW)
Title: Circuit-arrangement with at least one capacitor and its production method
Inventor: WILLER JOSEF
IPC: H01L27/108
Filed: 1999-01-14
Granted: 2001-01-01
Abstract: Wsix with 0.3 < x < 0.7 is used as the material for a least one electrode (p1) of the capacitor. Because this conductive material is amorphous until about 800 DEG C, diffusion of atoms into the capacitor-electrode (P1) or out of the capacitor-electrode (P1) cannot occur. This property is important, because the dielectric of the capacitor contains a ferro-electric. This conductive material is easily etchable, thus some thick layers can be structurized to generate a capacitor-electrode (P1). In order to increase the capacitance of the capacitor having simultaneously a high packing density of the circuit-arrangement, the capacitor-electrode (P1) perferably generated with a large surface and a small cross-section area.
Patent TW-584774-B (TW)
Title: Method of fabricating liquid crystal display device
Inventor: TASAKA YASUTOSHI
IPC: G02F1/1337
Filed: 1999-01-28
Granted: 2004-04-21
Abstract: A method of fabricating a liquid crystal display device including vertical alignment layers formed on the substrates. The alignment layer having a polymer realizing vertical alignment is formed on the substrate an unpolarized ultraviolet light is then irradiated in the oblique direction at an angle not more than 45 degrees with respect to the surface of the alignment layer. The ultraviolet light has an exposure energy of 30 to 120 mJ/cm<2> per percent of the polymer content realizing the vertical alignment of the alignment layer. The liquid crystal can thus align substantially vertically to the surface of the alignment layer, with a pretilt, and such an alignment is realized by the irradiation of the ultraviolet light, without rubbing.
Patent TW-I222878-B (TW)
Title: Pharmaceutical compositions
Inventor: BROOKS NIKKI THOENNES
IPC: A61P31/18
Filed: 1999-02-02
Granted: 2004-11-01
Abstract: The present invention relates to pharmaceutical compositions of (1S,4R)-cis-4-[2-amino-6-cyclopropylamino}-9H-purin-9-yl]-2-cyclopentene-1-methanol (1592U89).
Patent TW-410462-B (TW)
Title: RC semiconductor integrated circuit having MIS surge protector
Inventor: LIN PEI-FEN
IPC: H01L27/06
Filed: 1999-02-08
Granted: 2000-11-01
Abstract: A kind of RC integrated semiconductor device having a metal insulator semiconductor (MIS) surge protector which uses MIS surge protector to protect the capacitors. The advantages of the invention is that it has simple processes and the MIS surge protector could absorb higher energy to protect the circuit elements more effectively. The RC integrated semiconductor circuit with the MIS surge protector comprises: a resistor of which the first end is connected to the input terminal; a capacitor of which the first end is an output terminal connected to the second end of the resistor and the second end is grounded; and a surge protector, constructed by connecting one or more MIS in parallel, which is connected in parallel with the capacitor to protect the said capacitor. The characteristic is that the circuit is produced with the semiconductor technique such that on a semiconductor substrate the followings are formed: a resistor region; a capacitor region including a dielectric layer and upper/lower electrode regions; an MIS structure including an insulation layer, a semiconductor layer and a metal conductive region for providing the surge protection; an input/output electrode connection region; and the wires among the resistor region, the capacitor region and the MIS structure.
Patent TW-409385-B (TW)
Title: Thin film transistor used in semiconductor chip and the manufacture method thereof
Inventor: LEE JIA-SHENG
IPC: H01L23/522
Filed: 1999-03-26
Granted: 2000-10-21
Abstract: This invention provides a thin film transistor formed on a semiconductor chip and the manufacture method thereof. The thin film transistor comprises a dielectrics formed on the surface of said semiconductor chip; a resistor layer formed on one predetermined region of the surface of said dielectrics; a passivation layer formed on said resistor layer, wherein there are two holes formed by dry etching process and sited above two ends of said resistor layer; an insulated layer formed on above passivation layer, wherein there are two holes formed by dry etching process and sited above two holes of said passivation layer; and two electric-conductive layers formed inside two holes of said passivation layer and insulated layer and in contact with two ends of said resistor layer, for being used as the electric-connecting line on two ends of said resistor layer. Said passivation layer is used to protect said resistor layer to avoid said resistor layer being influenced by dry etching process, which may cause plasma damage.
Patent TW-474910-B (TW)
Title: A method for removing metal ions form cresol, mixtures
Inventor: TALBIERSKY JOERG
IPC: C07C37/82
Filed: 1999-05-05
Granted: 2002-02-01
Abstract: A method for removing of metal ions from cresol or from mixtures of aromatic compounds containing cresol is disclosed, wherein the water content in the cresol mixture is adjusted to at least about 0.5 per cent by weight by the addition of water and the water-and-cresol mixture is subsequently passes over an acid ion exchanger. As a result of the this process a metal ion content of less than 20 ppb per metal ion is achieved.
Patent TW-413893-B (TW)
Title: Method for eliminating etching microloading effect by etching and depositing at the same location
Inventor: TSAI MING-HUAN
IPC: H01L21/76
Filed: 1999-07-13
Granted: 2000-12-01
Abstract: The present invention relates to a method for eliminating etching microloading effect by etching and depositing at the same location. The spirit of the present invention is to use a capping layer to cover both the substrate and the photoresist on the substrate before etching of the substrate in which the capping layer may be made of dielectric layer or polymer layer. Because the aspect ratio of the trench will limit the step coverage capability of the capping layer, and that of the photoresist is limited by the opening width, the depth of the capping layer at the bottom of narrow trench is smaller than the depth of the capping layer at the bottom of wide trench. Therefore, in the subsequent etching process, although the microloading effect will cause the etching speed in the wide trench to be faster than the etching speed in the narrow trench, the thick capping layer at the bottom of the wide trench may need more time to be etched. Accordingly, it is obvious that the etching microloading effect will be cancelled by the deposited capping layer, so as to make the wide trench and the narrow trench formed by etching to have the same depth.
Patent TW-464632-B (TW)
Title: Storage container
Inventor: LILLELUND STIG
IPC: B65D25/54
Filed: 1999-07-16
Granted: 2001-11-21
Abstract: A container for storing items, such as foodstuffs. The container includes a sidewall which includes a monolithic window portion having greater transparency than the remainder of the sidewall. This is achieved by forming the container of a clear, tinted material, and forming the window portion with a reduced thickness, and/or forming the window portion with a smooth surface and forming the remainder of the sidewall with an obscuring texture. A cover may be used to close the container, and may form a seal with the container. The cover may include pivot pins to permit the cover to be pivoted to a position breaking the seal, thus permitting easier removal of the cover. A pouring insert may also be used with the container. The pouring insert is mounted to the mouth of the container, and includes a main pour spout and a secondary pour spout. Both pour spouts include pour guides to direct spilled contents back into the container. A hinge in the pouring insert permits a first section to remain in position while a second section is folded therebeneath. The second section may be secured in this position, forming a scooping aperture.
Patent TW-503248-B (TW)
Title: Flame-retardant polycarbonate resin composition and its injection moldings
Inventor: NODERA AKIO
IPC: C08L25/02
Filed: 1999-07-21
Granted: 2002-09-21
Abstract: Provided are a flame-retardant polycarbonate resin composition containing a phosphate compound as the flame retardant, and also injection moldings of the composition. The composition has good moldability, and its moldings have good phosphate mold-deposits resistance and good mold releasability. In particular, when containing a styrenic resin, the composition has much better melt fluidity, and its moldings have improved impact resistance and flame retardancy. The composition comprises 100 parts by weight of a resin or resin mixture of (A) from 70 to 100% by weight of a polycarbonate resin and (B) from 0 to 30 % by weight of a styrenic resin, from 8 to 12. Parts by weight of (C) a phosphate compound having a melting point of not lower than 70 DEG C, and from 1 to 2. Parts by weight of (D) at least one member selected from the group consisting of polyglycerins, polyalkylene glycols, esters of polyglycerins, esters of polyalkylene glycols and polyesters of polycarboxylic acids with polyalcohols.
Patent TW-452576-B (TW)
Title: Process for the production of acetic acid
Inventor: MUSKETT MICHAEL JAMES
IPC: C07C51/44
Filed: 1999-07-28
Granted: 2001-09-01
Abstract: In a process for the production of acetic acid by carbonylation of methanol and/or a reactive derivative in the presence of a group VIII noble metal carbonylation catalyst, methyl iodide co-catalyst at a concentration of at least 2 wt%, optionally at least one promoter at least a finite concentration of water, methyl acetate at a concentration of at least 8% w/w and acetic acid product, the separability of an upper (aqueous) layer and a lower (organic) layer in the decanter of the light ends column is achieved by maintaining the concentration of acetic acid in the condensed overhead vapour fraction passed to the decanter at or below 8 wt%.
Patent TW-434924-B (TW)
Title: Uninterruptible power supply
Inventor: KAWABE TOSHIYUKI
IPC: H02J9/06
Filed: 1999-08-24
Granted: 2001-05-16
Abstract: In the past, energy conservation in an uninterruptible power supply (hereinafter referred to as UPS), failed to take into account energy conservation of the machine load connected to the UPS and the total system that incorporates the machine load. Much power is thus wasted, thereby resulting in the need to improve the same. In order to overcome the aforesaid problem, the UPS of this invention comprises power input means 1 for providing the UPS  with commercial power, an AC/DC converter 4, a secondary battery 6 concealed therein, a charging circuit 5, a DC/AC converter 8, and a control circuit 9 for various control of the UPS. The UPS further comprises a power supply circuit 3 for sending the AC output of the power input means 1 to the control circuit 9, a switch a2 connected to the power input means 1, and a switch b12 for varying the power supplying path. The switches a, b can suit system control for optimum conditions to achieve the object of UPS energy conservation.
Patent TW-519733-B (TW)
Title: Manufacturing method of integrated circuit capacitor
Inventor: TZENG HUNG-HUEI
IPC: H01L21/8242
Filed: 1999-10-29
Granted: 2003-02-01
Abstract: A manufacturing method of DRAM having high-density capacitor is provided. First, a first conductive layer is deposited and a thicker second dielectric layer is formed on the first conductive layer. Then, a PR layer is formed and the PR layer is silylated. Second, the top silylation PR layer is removed and dry etching is used to etch the second dielectric layer and the first conductive layer. Then, the PR layer is removed and the silylation PR remains. Third, the silylation PR is used as a mask to dry etch the second dielectric layer and the remaining silylation PR is stripped. Then the second conductive layer is deposited and it is etched back to form four conductive cylinders. Forth, the remaining second dielectric layer is removed and a thin third dielectric layer is deposited to be the apacitor dielectrics. Then, a third conductive layer is formed on the dielectrics as the second storage electrode of the capacitor. Finally, the third conductive layer and third dielectric layer are etched to form the capacitor.
Patent TW-430751-B (TW)
Title: Acceptance and holding system for a substrate
Inventor: KIRSCHSTEIN ULF-CARSTEN
IPC: G03F7/20
Filed: 1999-11-17
Granted: 2001-04-21
Abstract: This invention relates to an acceptance and holding system for  a substrate (17) in light exposure equipment. It is provided with a holding system to provide the substrate (17), and electronic chuck arrangement (1) movable in the coordinate x, y to hold the substrate (17) during the exposure, and a light exposure optical system. Form this, a corpuscular radiation which corresponds to the coordinate Z is aimed at the surface of the substrate. In such a holding, it is provided at least a second electronic chuck arrangement (6), which like the first chuck arrangement (1), that holds the substrate (17) during the light exposure contains a cover surface for the substrate. But wherein the cover surface of the second chuck arrangement (6) is movably arranged in the direction of the coordinate Z. The both chuck arrangement (1, 6) concerning their holding forces are so designed that the substrate (17) not only superimposes on the first chuck arrangement (1) but also superimposes on the second chuck arrangement (6), and it is position securely held.
Patent TW-461831-B (TW)
Title: Apparatus and method for densely packing wire in a storage drum, and storage drum of densely packed welding wire
Inventor: COOPER WILLIAM D
IPC: B23K9/133
Filed: 1999-12-01
Granted: 2001-11-01
Abstract: A method and apparatus for densely packing wire in a storage drum is provided. A capstan is provided for pulling welding wire at a set rotational velocity. The welding wire is then provided to a rotatable laying head which receives the wire from the capstan, and in turn rotates with a storage drum placed on a rotatable turntable. As the welding wire is placed within the turntable in layers, the turntable is indexed relative to the storage drum axis and the rotational velocity of the capstan and laying head is altered, which causes the welding wire to be placed in a layer different from the first layer. This indexing is continued until the storage drum is full, forming alternating bands of welding wire to increase the packing density of the storage drum.
Patent TW-460850-B (TW)
Title: Value determining method and device in a value-stored card
Inventor: LIOU WEI-TZUNG
IPC: G06K5/00
Filed: 1999-12-24
Granted: 2001-10-21
Abstract: There are provided a value determining method and a device in a value-stored card, wherein a level is formed by more than one bit, and a deleting protection bit is corresponding to one level. In response to a value determination process, one of the bits is transited from the original state to the write-in state. If a bit in a higher level is changed, all the corresponding deleting protection bits in the lower level are transited simultaneously from the original states to the write-in state. Furthermore, only when the deleting protection bit is in the write-in state, the deleting protection bit and the bits in the level corresponding to the deleting protection bit can be simultaneously changed to the original state.
Patent TW-459087-B (TW)
Title: Human body washing machine
Inventor: HAYASHI RYOSUKE
IPC: B05B7/10
Filed: 2000-01-25
Granted: 2001-10-11
Abstract: A novel water jetting method capable of expanding a washing range two-dimensionally without involving a nozzle movement. A nozzle head (170) has, directly under a water-jet hole (31), a washing water vortex chamber (171) communicating with the head via a small-diameter communication path (163). The vortex chamber (171), being a hollow chamber having a tilted inner wall, is connected with a head flow path (34) eccentrically. Washing water flowing into the vortex chamber (171) via the head flow path (34) is jetted out from the water-jet hole (31) in the form of a spiral (conical) swirling water jet while swirling along the inner wall of the vortex chamber as shown by an arrow SY.
Patent TW-449782-B (TW)
Title: Magnetic bottle apparatus of plasma flood system
Inventor: YANG SHIN-JIA
IPC: H01L21/00
Filed: 2000-03-24
Granted: 2001-08-11
Abstract: This invention provides a magnetic bottle apparatus to be installed in the guide tube of the plasma flood system (PFS). This arrangement is capable of forming a bottle-shaped distribution of magnetic field in the tube so that electrons diffused to the tube through an arc chamber can be concentrated in the bottle-shaped magnetic field and thus the control and effectiveness of electric neutralization during the ion implantation in the plasma flood system is enhanced and the dosing accuracy of the ion implantation is increased, or the deterioration of device reliability and success rate due to poor electric neutralization is reduced.
Patent TW-471033-B (TW)
Title: Method for producing GaN series blue LED ohmic electrode
Inventor: JANG YI-TSUNG
IPC: H01L21/24
Filed: 2000-04-13
Granted: 2002-01-01
Abstract: The present invention relates to a method for producing a GaN series blue LED ohmic electrode and a transparent conductive layer (TCL), and a structure thereof. The method comprises: forming an alloy membrane on a P-type GaN; separately forming an alloy membrane ohmic electrode on a P-type GaN epitaxial layer and an N-type GaN epitaxial layer; applying a thermal treatment to the alloy membrane and the alloy membrane ohmic electrode in order to form an optimum ohmic performance and optical transmittance. Therefore, the injected current can effectively and uniformly distribute to the N-type electrode.
Patent TW-528742-B (TW)
Title: Process for preparing (1R, 2S, 4R)-(-)-2-[(2'-(N,N-dimethylamino)-ethoxy)]-2-[phenyl]-1,7,7-tri-[methyl]-bicyclo[2.2.1]heptane and pharmaceutically acceptable acid addition salts thereof
Inventor: LUKACS GYULA
IPC: A61K31/13
Filed: 2000-05-10
Granted: 2003-04-21
Abstract: The invention relates to a process for preparing (1R, 2S, 4R)-(-)-2-[(2'-(N,N-dimethylamino)-ethoxy)]-2-[phenyl]-1,7,7-tri-[methyl]-bicyclo[2.2.1]heptane and pharmaceutically acceptable acid addition salts thereof with higher yields and higher grades of purity.
Patent TW-527371-B (TW)
Title: Photocurable and thermosetting composition
Inventor: SAITO TERUO
IPC: G03F7/038
Filed: 2000-05-17
Granted: 2003-04-11
Abstract: A halogen-free photocurable and thermosetting composition which does not generate harmful gases such as dioxin at burning and exhibits flame retardance and self extinguishing. This composition comprises (A) a resin compound prepared by reacting (a) a compound having two or more epoxy groups in the molecule with (b) an unsaturated monocarboxylic acid and (c) a compound represented by general formula (1) and then reacting the obtained product with a saturated or unsaturated polybasic acid anhydride, (B) a photopolymerization initiator, (C) a compound having two or more epoxy groups in the molecule, and (D) a reactive and/or nonreactive diluent. In formula (1) R1 and R2 are each an cromatic ring or alkyl group.
Patent TW-462930-B (TW)
Title: Structure of container box arrangement part for vehicle
Inventor: OKADA NAOKI
IPC: B62K19/46
Filed: 2000-06-26
Granted: 2001-11-11
Abstract: This invention provides a structure of container box arrangement part for vehicle capable of effecting a largest possible container space and opening of the container box, while satisfying several requirements. The solution of this invention comprises an openable main seat 72 of approximately an L shape with a back rest 72a rising from the rear end of the seat section 72d thereof, and a fixed rear seat 73 disposed to the rear of said main seat 72 and having a seat surface higher than that of the seat section 72d of said main seat 72, a container box 23 being disposed, under both of said seats 72, 73, extending approximately from the forward end of said main seat 72 to the rear end of said rear seat 73. The container box 23 comprises a main seat side container 23a located under said main seat 72 and having an opening 23d adapted to be opened and closed by said main seat 72, and a rear seat side container 23b located under said rear seat 73 for receiving articles put in and taken out from said opening 23d. On the other hand, said rear seat 73 has a lateral cross section of the shape of approximately an inverted letter U, and the upper section 23h of said rear seat side container 23b of said container box 23 being formed to match the shape of the inverted letter U of said rear seat 73.
Patent TW-473902-B (TW)
Title: Thin film capacitors on silicon germanium substrate and process for making the same
Inventor: MCMILLAN LARRY D
IPC: H01L21/02
Filed: 2000-07-24
Granted: 2002-01-21
Abstract: An integrated circuit capacitor (10, 25, 30, 402) containing a thin film of dielectric metal oxide (20, 420) is formed above a silicon germanium substrate (12, 406). A silicon nitride diffusion barrier layer (24, 324, 414) is deposited on a silicon germanium substrate to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress reduction layer (26) is deposited on the diffusion barrier layer. A bottom electrode (16, 418) is formed on the stress reduction layer, then a liquid precursor is spun on the bottom electrode, dried at about 400 DEG C, and annealed at between 600 DEG C and 850 DEG C to form a BST capacitor dielectric (20, 420). A top electrode (22, 422) is deposited on the dielectric and annealed. The integrated circuit may also include a BiCMOS device, a HBT device or a MOSFET.
Patent TW-509902-B (TW)
Title: Device for writing information onto an information carrier
Inventor: IMMINK ALBERT HENDRIK JAN
IPC: G11B7/125
Filed: 2000-08-09
Granted: 2002-11-11
Abstract: A device according to the invention for writing information to an information carrier (1) includes conversion means (7) for converting symbols in an information signal (SINFO) into pulse sequences in a controlsignal (STR). The device further includes a transducer (10) for generating a physically detectable pattern on the information carrier (1) in response to the control signal (STR). The conversion means (7) include assignment means (702) for assigning properties of the pulse sequences to symbols in the information signal (SINFO). These properties include the duration and the magnitude of pulses in the pulse sequence. The conversion means (7) further include at least one counter (711) for supplying a count signal (TC1) after a time interval, which counter is coupled to the assignment means (702). The conversion means (7) further include a controllable delay line (761) coupled to the at least one counter (711), for delaying the count signal (TC1), and to the assignment means (702).