baber/WOPTO huggingface dataset:
Patent TW-484084-B (TW)
Title: Bidding competition method of wholesale and wholesaling merchandise
Inventor: CHEN YUNG-CHIANG
Filed: 2000-10-21
Granted: 2002-04-21
Abstract: The present invention discloses a bidding competition method of wholesale and wholesaling merchandise. In the bidding competition method of wholesaling merchandise, the seller wishes to sell lots of single merchandises to the buyer group with less demand at one time. After the buyer bids, the bidding prices of the buyers are sorted, and the bidding prices and the buying quality are checked sequentially for bidding determination. The bidding determination procedure is started from the buyer with the highest bidding price. If the bidding price of the buyer is higher than the base price and the remaining quality of the merchandises can satisfy the desire of the buyer, the buyer is deemed to succeed in bidding. Then, such a determination process is sequentially performed to sell the remaining quality of the merchandises. As such, the seller can sell merchandises to the buyer with the highest bidding price at the highest priority. After satisfying the buyer with the highest bidding price, the merchandises are sold to the buyer with the second highest bidding price. Such a process is repeated until the merchandise is sold out or bidding price is lower than the base price. Similarly, the method is suitable for bidding competition method of mass-purchasing wholesaling merchandise.
Patent TW-506995-B (TW)
Title: Method for making nanoporous silicone resins from alkylhydridosiloxane resins
Inventor: ZHONG BIANXIAO
IPC: H01L21/316
Filed: 2000-11-21
Granted: 2002-10-21
Abstract: A method is disclosed for preparing a nanoporous silicone resin which can be used to form low dielectric constant films useful for electrical insulating coatings on electronic devices comprising (A) contacting a hydridosilicon containing resin with a 1-alkene comprising 8 to 28 carbon atoms in the presence of a platinum group metal-containing hydrosilation catalyst effecting formation of an alkylhydridosiloxane resin where at least 5 percent of silicon atoms are substituted with at least one group comprising 8 to 28 carbon atoms and at least 45 percent of silicon atoms are substituted with at least one hydrogen atom and (B) heating the alkylhydridosiloxane resin of step (A) at a temperature sufficient to effect curing and thermolysis of alkyl groups comprising 8 to 28 carbon atoms from the silicon atoms thereby forming a nanoporous silicone resin.
Patent TW-507357-B (TW)
Title: CMOS device placement with dual line power supply
Inventor: WANG SHAU-YU
IPC: H01L27/00
Filed: 2000-12-05
Granted: 2002-10-21
Abstract: The present invention provides a basic standard cell placement composed of CMOS using dual line power supply, which at least includes a plurality of CMOS transistors, in which half of CMOS transistors are situated on the upper side of the first metal conducting wire of the reference potential, and the others are situated on the bottom of the first metal conducting wire. The upper half CMOS transistors are connected to the second metal conducting wire and the bottom half CMOS transistors are connected to the third metal conducting wire. The second and the third metal conducting wires are connected to a power supply terminal. Besides, the drains are connected to each other and the gates are connected to each other in each set of two adjacent CMOS transistors. Each set of the drains functions as a signal output terminal or as an input terminal for each adjacent set of the gates.
Patent TW-498686-B (TW)
Title: Interactive program guide with graphic program listings
Inventor: REICHARDT M SCOTT
IPC: H04N5/445
Filed: 2001-01-04
Granted: 2002-08-11
Abstract: Electronic program guides in which program listings may be graphically presented and in which sponsors and celebrities of those programs may be identified are provided. The electronic programs guides may be passive television program guides, interactive television program guides, and/or on-line television program guides. Television show text information, logos and/or trademarks, celebrity images, affiliation indicators, and advertisements may be present in the program listings to enhance the electronic program guides.
Patent TW-546472-B (TW)
Title: Method and device for imaging liquid-filled container
Inventor: YAMAGISHI TAKAHIRO
IPC: G01N21/90
Filed: 2001-02-02
Granted: 2003-08-11
Abstract: The present invention relates to a method and an apparatus for imaging a liquid-filling container in which a light emitting unit (2) is provided for emitting and irradiating light onto the container (B) and a light receiving unit (3) is provided for receiving the light transmitted through the container. The object of the present invention is to provide such a method and an apparatus for imaging a liquid-filling container to assure reliable detection of the surface level of liquid filled in a container or of foreign substance mixed in the liquid or present in the container or the container material not only when the container is transparent, but also when the container is a colored container of a dark color such as black, dark green or dark brown or the container has a frosted surface or when the liquid filled in the container has a dark color. For accomplishing this object, according to the present invention, the light emitting unit (2) emits near infrared light or the light receiving unit (3) receives near infrared light for imaging the container (B).
Patent TW-582063-B (TW)
Title: Manufacturing method of damascene structure
Inventor: SHIU JIA-LIN
IPC: H01L21/321
Filed: 2001-02-05
Granted: 2004-04-01
Abstract: A manufacturing method of damascene structure is disclosed, which is to form a dielectric layer on the substrate, define a dielectric to form an opening on the part of exposed substrate. Form a barrier layer on the substrate and form a metal layer on the substrate to fill the opening. Then proceed the chemical mechanical polishing step, use the first polishing slurry to polish the metal layer, and use the second slurry containing an oxidizing agent to polish the barrier layer, so as to form a damascene structure.
Patent TW-I220996-B (TW)
Title: Phosphor and fluorescent display device
Inventor: KAWATSU KUNIAKI
IPC: H01J31/15
Filed: 2001-04-18
Granted: 2004-09-11
Abstract: The present invention provides a fluorescent substance capable of preventing a deterioration in luminous characteristics thereof, particularly, high-temperature operation characteristics thereof due to a pigment added thereto. SiO2 is added into and is melted with CoAl3O4 as the blue pigment at 900 to 1500 DEG C. The sodium contained in the pigment is glassified and hardly moves to the exterior. The blue pigment is applied into ZnO: Zn fluorescent substance. Plural kinds of fluorescent substance samples with varied amount of SiO2 additives are prepared, so as to obtain the demonstrated plot without proceeding the high-temperature lighting experiment. Using the test time as the horizontal axis, and using the residual luminance ratio when the initial luminance is 100 as the vertical axis, the amount of added SiO2 is expressed as the parameter. When the added amount of SiO2 is more than 0.1%, the residual luminance ratio practically sufficient can be obtained even if the test time is increased. As compared to the above, when the added amount of SiO2 is 0 (as in the well-known embodiment), the residual luminance ratio decreases abruptly (about 50%) when the test time exceeds 20 hours. The residual luminance ratio is about 30% after 1000 hours.
Patent TW-507321-B (TW)
Title: Semiconductor device with self-aligned contact structure and method of manufacturing the same
Inventor: AHN TAE-HYUK
IPC: H01L21/8242
Filed: 2001-05-28
Granted: 2002-10-21
Abstract: A semiconductor device having a self-aligned contact and a method of manufacturing the same are disclosed. The device comprises semiconductor substrate and two conductor structures formed on the substrate with a space therebetween. Each of conductor structures includes a first conductive layer covered with a silicon nitride mask layer. Silicon oxide spacers are formed on the sides of each conductor structure to a height lower than the top of the top of the silicon nitride mask layer. Silicon nitride spacers are formed on the sides of each conductor structure and the surface of the silicon oxide spacers. Over the conductor structures and substrate, there is formed an insulating layer of silicon oxide having a self-aligned contact hole exposing the silicon nitride spacers and partially extending over each conductor structure. The self-aligned contact hole is filled up with a second conductive layer self-aligned to the conductor structures. Dual spacers consisting of the silicon oxide spacer and the silicon nitride spacer are formed on the sides of the conductor structure, thereby decreasing the loading capacitance between the first conductive layer and the second conductive layer within the self-aligned contact hole.
Patent TW-593903-B (TW)
Title: Electric discharge gas laser
Inventor: OOYAMA ATUSHI
IPC: H01S3/03
Filed: 2001-06-08
Granted: 2004-06-21
Abstract: There is provided an electric discharge gas laser comprising a housing containing a laser gas; a rotating fan provided in the housing to circulate the gas in the housing; a bearing device for magnetically supporting a rotating shaft of the rotating, the bearing device being provided with a sensor device comprising a sensor for sensing the position of the rotating shaft to generate signals indicating the position of the rotating shaft, and a signal processor for receiving and processing the signals delivered from the sensor to output processed signals; and a control separated from the bearing device and functionally associated with the bearing device to receive the processed signals from the sensor device for controlling the bearing device on the basis of the processed signals.
Patent TW-495923-B (TW)
Title: Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment
Inventor: WON SEOK-JUN
IPC: H01L21/8242
Filed: 2001-06-20
Granted: 2002-07-21
Abstract: A method for manufacturing a capacitor of a semiconductor memory device by a two-step thermal treatment is provided. A lower electrode is formed on a semiconductor substrate. A dielectric layer is formed over the lower electrode. An upper electrode formed of a noble metal is formed over the dielectric layer. The resultant having the upper electrode undergoes a first thermal treatment under a first atmosphere including oxygen at a first temperature which is selected to be within a range of 200-600 DEG C, which is lower than the oxidation temperature of the upper electrode. The first thermally treated resultant undergoes a second thermal treatment under a second atmosphere without oxygen at a second temperature which is selected to be within a range of 300-900 DEG C, which is higher than the first temperature.
Patent TW-I286548-B (TW)
Title: Benzoylpyridine derivative or its salt, fungicide containing it as an active ingredient, its production process and intermediate for producing it
Inventor: NISHIDE HISAYA
IPC: C07D213/74
Filed: 2001-07-02
Granted: 2007-09-11
Abstract: The present invention relates to a fungicide containing a novel benzoylpyridine derivative or its salt. The present invention provides a fungicide containing a benzoylpyridine derivative represented by the formula (I) or its salt, wherein X is a halogen atom, a nitro group, a substitutable alkoxy group, a substitutable aryloxy group, a substitutable cycloalkoxy group, a hydroxyl group, a substitutable hydrocarbon group, a substitutable alkylthio group, a cyano group, a carboxyl group which may be esterified or amidated, or a substitutable amino group; n is 1, 2, 3 or 4; R1 is a substitutable alkyl group; R2 is a substitutable alkyl group, a substitutable alkoxy group, a substitutable aryloxy group, a substitutable cycloalkoxy group or a hydroxyl group; and m is 1, 2, 3 or 4, provided that when m is at least 2, R2 may contain an oxygen atom to form a condensed ring.
Patent TW-530525-B (TW)
Title: Method of disposing buffer and its chip
Inventor: CHANG YUNG-CHUNG
IPC: G06F9/45
Filed: 2001-07-27
Granted: 2003-05-01
Abstract: A kind of method for disposing buffers is used to dispose plural buffers on a chip. The chip is provided with a signal source terminal and X output pads, in which X is a positive integer. The disposing method in the invention includes the followings. (a) The Nth layer buffer is disposed in the vicinity of middle position of every two output pads, and each output pad is electrically connected with the corresponding Nth layer buffer. (b) The (N+1)th layer buffer is disposed in the vicinity of middle position of every two Nth layer buffers, and each Nth layer buffer is electrically connected with the corresponding (N+1)th layer buffer. In addition, whether the quantity of the (N+1)th layer buffer is equal to 1 or not is judged. If it is equal to 1, the method is ended. If it is not, proceed step (c). (c) The value of N is added by 1 and step (b) is repeated.
Patent TW-555877-B (TW)
Title: A method of producing high aspect ratio domes by vapor deposition
Inventor: GOELA JITENDRA S
IPC: C23C16/01
Filed: 2001-07-31
Granted: 2003-10-01
Abstract: An apparatus and method for preparing high aspect ratio domes employed to enhance aerodynamic performance in missiles and aircraft. The apparatus and method of the present invention also provide transmissive domes for infrared sensors used for navigation, targeting and guidance systems. The apparatus is employed in chemical vapor deposition furnaces for chemical deposition of materials on mandrels to form domes. The mandrels of the apparatus are arranged in the deposition chamber such that the flow of gaseous reactants does not impinge on the mandrels. The reactants diffuse onto the mandrels to form domes with high aspect ratios.
Patent TW-513801-B (TW)
Title: Semiconductor-memory-cell arrangement and its production method
Inventor: GOEBEL BERND
IPC: H01L21/8242
Filed: 2001-07-31
Granted: 2002-12-11
Abstract: In a semiconductor-memory-cell arrangement with dynamic memory-cells, which have a trench-capacitor and a vertical selection-transistor respectively, the memory-cells are arranged in a matrix-form, where the trench-capacitors and the related vertical selection-transistors are arranged respectively in rows and/or columns shape.
Patent TW-513342-B (TW)
Title: Diffuser plate and diffusion film for the same
Inventor: LIN CHYUN-YU
IPC: B29D7/00
Filed: 2001-08-07
Granted: 2002-12-11
Abstract: A diffusion film used for diffuser plate is formed by the curtain coating method and the photo solidifying method. The ingredient of the diffusion film includes acrylate, photo initiator, diffuser powder, defoaming agent, toughtening agent and wetting agent. The photo initiator includes one selected from a group consist of methyl-1-(4-methyl-thio-benzene)-2-morpholinyl-1-acetone, 1-hydroxycyclohexylphenylketone, 2-hydroxy-2-methyl-1-phenylpropanone, 2-isopropylthioxanthone, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide. The toughtening agent is a compound including silicon. The wetting agent is a compound of silicon oxide for accomplishing a rapidly formed diffusion film with good quality.
Patent TW-531858-B (TW)
Title: Apparatus for molding a semiconductor wafer and process therefor
Inventor: CHEW HWEE SENG JIMMY
IPC: B29C45/14
Filed: 2001-10-12
Granted: 2003-05-11
Abstract: Mold pieces (105 and 110) for molding a layer of mold compound on the interconnect side of a bumped semiconductor wafer (118) include from the primary cavity (117) flows. The secondary cavities (120) include a plunger (130) that asserts a predetermined backpressure that is equal to a desired mold compound pressure on the mold compound during molding. In this way, most of the excess mold compound is forced into the secondary cavities (120) and the mold compound is under the desired mold compound pressure. As most of the excess mold compound in the primary cavity (117) flows into the secondary cavities (120), this advantageously leaves a relatively thin layer of mold compound on the semiconductor wafer (118). This thin layer of mold compound is then advantageously removed, for example by grinding, in a relatively short time.
Patent TW-562885-B (TW)
Title: Rubber thread sewing machine
Inventor: MATSUZAKI HIROSHI
IPC: D05B35/06
Filed: 2001-11-09
Granted: 2003-11-21
Abstract: The objective of the rubber thread sewing machine of this invention is to reliably obtain a sewn article having a well-finished elastic expandable portion by sewing rubber thread with a plurality of rubber threads equally stretched. A rubber thread sewing machine has a rubber thread intermittent delivery mechanism 30 capable of delivering a plurality of rubber thread 7 by elastically pinching and relatively rotating the plurality of rubber threads 7 by a driving roller 34 that can be intermittently driven and rotated only in one direction by a matched tensile force and a following roller 45 elastically butting the periphery thereof between a thread handling area 9B arranged before the direction of progress of sewing rather than a plurality of sewing needles 4 arranged side by side in the direction perpendicular to the direction of progress of sewing and introducing and guiding the plurality of rubber threads 7 into between the needle plate 3 and a presser bar 9 correspondingly to the sewing needles 4 along the top face of a needle plate 3, and the supply section of the plurality of rubber threads 7.
Patent TW-559624-B (TW)
Title: Epoxy resin composition and semiconductor device
Inventor: SUMIYOSHI TAKAFUMI
IPC: C08L61/06
Filed: 2001-11-21
Granted: 2003-11-01
Abstract: The present invention provides an epoxy resin composition for encapsulation of semiconductors which contains substantially neither halogen-based flame retarding agents nor antimony compounds and is excellent in moldability, flame retardance, high-temperature storage characteristics, reliability for moisture resistance, and solder cracking resistance. That is, the present invention is an epoxy resin composition for encapsulating semiconductors which contains (A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler and (E) a phosphazene compound as essential components, the total weight of phosphate ion and phosphite ion contained in the phosphazene compound being net more than 500 ppm. Further, the epoxy resin composition may optionally contain a flame-retarding assistant or an ion scavenger.
Patent TW-546792-B (TW)
Title: Manufacturing method of multi-chip stack and its package
Inventor: FANG REN-GUANG
IPC: H05K13/00
Filed: 2001-12-14
Granted: 2003-08-11
Abstract: The present invention discloses a manufacturing method of multi-chip stack and its package, in which at least two chips are stacked by flip chip bonding technique, and the upper and lower chips are combined with bumps by bumps or with under bump metallurgy by bumps. The lower chip is connected to the substrate by a solder wire operation. Plural chips transmit and receive electrical signals to and from the external system via metal solder wires.
Patent TW-524734-B (TW)
Title: Clutch type impact hand tool and grip thereof
Inventor: LIOU MAU-TANG
IPC: B25F1/00
Filed: 2001-12-19
Granted: 2003-03-21
Abstract: This invention relates to a hand tool, in particularly to an impact type tool having a clutch mechanism. At the disengagement position, this invention provides impact operations for driving a screw rod. On the contrary, at the engaged position, this invention may be operated by a user as a screw driver type tool by directly driving the screw components. At the same time, this invention provides on the tool grip with a plurality of tool storage compartments for receiving a plurality of tool bits while allowing for convenience in use. On another side of the tool grip is provided with a rod body having a magnetic tip such that the user may be able to pick up tool bits falling in a compact space.
Patent TW-578006-B (TW)
Title: Compact telecentric projection lenses for use with pixelized panels
Inventor: MOSKOVICH JACOB
IPC: G02B13/22
Filed: 2002-02-20
Granted: 2004-03-01
Abstract: Telecentric projection lenses for use with pixelized panels (PP) are provided. The projection lenses have a negative first unit (U1) which has at least one negative meniscus element (N1) having at least one aspheric surface and a positive second unit (U2) which has at least one positive element (P1) having at least one aspheric surface. The lens' aperture stop (AS) is located between the two units, and a third lens unit (U3) may be used in the vicinity of the aperture stop to improve the correction of axial color. The lenses have small forward vertex distances, small clear apertures, and long back focal lengths which make them particularly well-suited for use in the manufacture of compact projection systems.
Patent TW-574753-B (TW)
Title: Manufacturing method of thin film apparatus and semiconductor device
Inventor: ASANO AKIHIKO
IPC: H01L21/336
Filed: 2002-04-11
Granted: 2004-02-01
Abstract: The invented thin film apparatus is featured with the followings. After the thin film apparatus 103 formed on the passivation layer 102 of the first substrate 101 is connected with the second substrate 106 via the first bonding layer 105, at least either one of the processing steps containing chemical processing or mechanical polishing processing is used to completely or partially remove the first substrate 101. After the third substrate 109 is bonded on the exposed passivation layer 102 or the passivation layer 102 covering the partially removed first substrate 101via the second bonding layer 108, the second substrate 106 is separated or removed, so as to complete the manufacturing process. By using the manufacturing method stated above, it is capable of providing a thin film apparatus suitable for use in light-weight and thin type display panel without damaging its rigid property.
Patent TW-561728-B (TW)
Title: Antenna switching device employing earphone
Inventor: IKEDA TAKESHI
IPC: H04B7/08
Filed: 2002-04-12
Granted: 2003-11-11
Abstract: The present invention provides an antenna switching device employing earphone. The solution means is to provide: a defective reception detection section 9 that detects the defective reception; and an antenna switch 8 thrown to the position of either of two earphone wires 11a, 11b for its electric contact provided for stereo audio output at every detection of defective reception. On the occurrence of defective reception when the one earphone wire is used for an antenna, the other earphone wire is selected for the antenna to change the reception state of the antenna, thereby correcting the defective reception.
Patent TW-I229143-B (TW)
Title: Magnetron sputtering source with multi-portion target and method to operate such a magnetron sputtering source
Inventor: DUBS MARTIN
IPC: C23C14/54
Filed: 2002-04-18
Granted: 2005-03-11
Abstract: The present invention relates to the method and device for a magnetron sputtering source with multi-portion target (3, 4) and a movable magnet system (5). Through the variation of the power output of the power supply (6) enables it to preferably influence certain regions of the multi-portion target (3, 4). It permits to adjust the stoichiometry of the sputtered target materials on the substrate (15) to be applied, and to positively influence the homogeneity of the layer structure.
Patent TW-557554-B (TW)
Title: Flip chip package process
Inventor: SU CHAO-YUAN
IPC: H01L23/28
Filed: 2002-07-22
Granted: 2003-10-11
Abstract: A fluxless flip chip package process is disclosed. A fluorine-contained plasma is used to transfer the oxide covered the solder bump to oxyfluoride with low melting point. Then, spin the under-fill over the solder bump and turn the chip having solder bump covered under fill over to align the substrate. Finally, a thermal process is performed to adhere the solder bump and the substrate each other. The under fill cure and the re-flow process of the solder bump may be performed together.