Patent SG-11201901168U-A (SG)
Title: Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
Inventor: DERNER SCOTT J
IPC: H01L27/11502
Filed: 2017-08-02
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 08 March 2018 (08.03.2018) W I PO I PCT l0DIIIIIIIIVH D l 0 111VIIIOH olo olo Ho Ho mmoiliflo oimIE (10) International Publication Number WO 2018/044486 Al 11' ..\". - ' 7 -- /10 110 237 115 VBLREF ISOREF ISO 233 WL-CT(0) /05—, K m 205 , ,.. 1 220) 224 230 215 ' WL-CB(0) '-s--- WL-C - r( /05- \ \" 19 110 El mcto 205 , 220) ' - 1224 230 215 . . WL - CB(1) .\"--\ ---- 110 110 WL CT(n) - 1051 205-, 220) MC(n) 224 230 L 215 WL-CB V 235 L-23 (51) International Patent Classification: Gl1C 11/22 (2006.01) H01L 27/11502 (2017.01) (21) International Application Number: PCT/US2017/045175 (22) International Filing Date: 02 August 2017 (02.08.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/381,879 31 August 2016 (31.08.2016) US (71) Applicant: MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way, Boise, Idaho 83716 (US). (72) Inventors: DERNER, Scott J.; 5032 E. Sagewood Drive, Boise, Idaho 83716 (US). KAWAMURA, Christopher J.; 1778 S. Toluka Way, Boise, Idaho 83712 (US). (74) Agent: ENG, Kimton et al.; DORSEY & WHITNEY LLP, 701 5th Ave, Suite 6100, Seattle, Washington 98104 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). (54) Title: APPARATUSES AND METHODS INCLUDING FERROELECTRIC MEMORY AND FOR OPERATING FERRO- ELECTRIC MEMORY RESTORE 0 ,-- 200 r 125 VREAD B 1-1 FIG. 2A O ▪ (57) : Apparatuses and methods are disclosed that include ferroelectric memory and for operating ferroelectric memory. An example apparatus includes a capacitor having a first plate, a second plate, and a ferroelectric dielectric material. The apparatus further 0 includes a first digit line and a first selection component configured to couple the first plate to the first digit line, and also includes a N second digit line and a second selection component configured to couple the second plate to the second digit line. C [Continued on next page] WO 2018/044486 Al 1#110figinigEIERNHOHOHIMEMOVOIS Published: — with international search report (Art. 21(3))