baber/WOPTO huggingface dataset:
Patent TW-414930-B (TW)
Title: The photo detector
Inventor: LIU CHEE-WEE
IPC: H01L31/112
Filed: 1999-06-21
Granted: 2000-12-11
Abstract: This invention is about a photodetector that includes the followings: a conducting layer; a layer of p type (n type) semiconductor that is used to generate the electron hole pair in accordance with the irradiation of light; an insulating layer that is in between this conducting layer and the semiconductor layer; and a voltage source whose positive pole (negative pole) is electrically connected to the conducting layer and negative pole (positive pole) is electrically connected to this p type (n type) semiconductor layer. The voltage source is used to provide a bias to generate a quantum tunneling that makes the electrons (holes) excited by light in p type (n type) semiconductor layer tunnel the insulating layer and reach the conducting layer to form a photo current. The intensity of this photo current is basically proportional to the irradiating light intensity.
Patent TW-392056-B (TW)
Title: Refrigeration or air conditioning unit with noise reducing grille
Inventor: TARAS MICHAEL F
IPC: F24F13/24
Filed: 1999-08-21
Granted: 2000-06-01
Abstract: The open grille structure normally directly in front of a condenser coil is replaced with an acoustical barrier which is moved forward of the condenser coil. In moving the acoustical barrier forward, space results at the top, bottom and sides of the unit which can be used to provide inlet openings for inlet air. Acoustical absorption material lines the structure defining the air flow path to the coil. The modified air flow path results in a modified sound path which results in sound attenuation.
Patent TW-409170-B (TW)
Title: Large quantity supply apparatus for the gas in semiconductor process
Inventor: HASAKA SATOSHI
IPC: F17C13/04
Filed: 1999-09-03
Granted: 2000-10-21
Abstract: An apparatus for supplying a semiconductor process gas charged in a large-capacity gas vessel 21 to a plant where the gas is used, after reduction of the pressure of the gas. The gas cylinder 21 is composed essentially of a cylindrical portion 22 and hemispherical portions 23 and 23 formed at the ends of the cylindrical portion respectively. A gas charge port 26 is at one hemispherical portion and a gas discharge port 27 is at the other hemispherical portion, both of which are in alignment with the axis 25 of the cylindrical portion 22. A charge valve 28 and a gas discharge unit 29 having at least a gas vessel valve 30 and a pressure reducing valve 32 are connected to the gas charge port and the gas discharge port respectively. The gas cylinder 21 is housed together with the charge valve 28 and the gas discharge unit 29 in a container 36.
Patent TW-425711-B (TW)
Title: Manufacturing method for capacitor
Inventor: LOU CHINE-GIE
IPC: H01L21/768
Filed: 1999-11-26
Granted: 2001-03-11
Abstract: The present invention provides a manufacturing method for capacitor which is applied for a substrate. The inventive manufacturing method includes the following steps: first, forming a first dielectric on the substrate; removing part of the first dielectric to form a contact hole; then, forming a conductive plug in the contact hole; forming a seed layer on the conductive plug; next, forming a sacrificing layer on the seed layer and the first dielectric; then, removing the sacrificing layer in a specific area to form a trench and exposing the seed layer; conducting electroplating to form the bottom electrode in the trench; then, removing the sacrificing layer on the first dielectric; lastly, sequentially forming the second dielectric and a top electrode on the bottom electrode to complete the capacitor production. The top and bottom electrodes both are made of Pt metal. The inventive manufacturing method needs no etching process for the Pt metal so as to prevent the problem of hard etching and not easy to control the critical dimension.
Patent TW-507058-B (TW)
Title: A ball coupling
Inventor: LE CLINCHE PASCAL
IPC: F16L37/40
Filed: 1999-12-01
Granted: 2002-10-21
Abstract: A ball coupling comprising a male tubular endpiece (2) provided with an outer annular collar (4), a female tubular endpiece (3) having a ball-retaining cage fixed axially thereon, the cage having slots (10) for receiving balls (12), and a thimble (13) disposed coaxially about the cage (6) and mounted thereon via guide means (14, 15) for guiding the thimble to turn about the longitudinal axis (1) of the coupling so as to enable the thimble to turn through a turn angle (Α) relative to the cage between a first position and a second position, the thimble having for each ball, a first recess (16) extending in register with the corresponding slot for the first position of the thimble to form an abutment for holding the corresponding ball in a position in which it projects into the inside of the cage, and a second recess (17) connected to the first recess via a sloping wall (18) and offset relative to the first recess by an angle corresponding to the turn angle (Α) so as to receive the corresponding ball in a position in which it is retracted from its projecting position when the thimble is in its second position.
Patent TW-492190-B (TW)
Title: Method for stabilizing SOI semiconductor device and SOI semiconductor device
Inventor: NIIMI KENICHI
IPC: H01L21/326
Filed: 2000-02-16
Granted: 2002-06-21
Abstract: A method for stabilizing an SOI semiconductor device which comprises the steps of: providing an SOI semiconductor device constituted of an SOI substrate including a support substrate, a buried insulating film formed on the support substrate and a surface semiconductor layer formed on the buried insulating film, source/drain regions formed in the surface semiconductor layer and a gate electrode formed on the surface semiconductor layer between the source/drain regions with intervention of a gate insulating film; and applying an electric stress between the support substrate and one of the source/drain regions so that a back channel is formed in a side of the surface semiconductor layer to the buried insulating film, thereby to introduce a capturing potential at least near an interface between said one of the source/drain regions and the surface semiconductor layer in the buried insulating film side.
Patent TW-436945-B (TW)
Title: Method for manufacturing solder points in lead frame for integrated circuit package
Inventor: LUO SHIAU-YU
IPC: H01L21/60
Filed: 2000-03-17
Granted: 2001-05-28
Abstract: There is provided a method for manufacturing solder points in lead frame for integrated circuit package, which is used to form solder points on a CSP lead frame. The manufacturing method of the solder points in lead frame is characterized in using a selective shielding oxide deposition process, instead of the conventional polyimide selective removing process, to form solder-ball opening, and then forming a solder point in the solder-ball opening. With such a character, the implementation of manufacturing the solder points in the lead frame is easier and cheaper than the conventional skill.
Patent TW-444348-B (TW)
Title: Improved dual damascene process
Inventor: LIN GANG-JENG
IPC: H01L21/768
Filed: 2000-03-21
Granted: 2001-07-01
Abstract: There is provided a process for forming dual damascene opening filled with metal in the composite insulator layer. The process is characterized in using selective reaction ion etching method to form an opening having a larger diameter in the silicon oxide located in the upper layer and an opening having a smaller diameter in the silicon oxide located in the lower layer. The small-area silicon nitride protrusion structure located at the composite insulator layer is used as stop layer in the selective reaction ion etching. In comparison with the large-area silicon nitride stop layer, the small-area silicon nitride protrusion structure can provide a smaller composite insulator layer capacitor.
Patent TW-466729-B (TW)
Title: Plating method and device, and plating system
Inventor: NIUYA TAKAYUKI
IPC: C25D7/12
Filed: 2000-07-26
Granted: 2001-12-01
Abstract: The object of the present invention is to provide a plating method and device, and plating system, capable of performing planarization with a quality higher than the conventional skill, In the plating method and device, an object (10) to be processed and an electrode plate (20) are dipped in an aqueous solution containing ions of a target metal. A current to flow in the forward direction between the object and the electrode plate is allowed., so as to deposit metal on the surface of the processed object. After a plating film having a thickness greater than necessary on the object is formed, a current to flow in the reverse direction between the object (10) and the electrode plate (20) is allowed to uniformly remove at least unnecessary part of the plating film.
Patent TW-434037-B (TW)
Title: Image-display game system and information storage medium used therefor
Inventor: TAJIRI SATOSHI
IPC: A63F13/69
Filed: 2000-07-28
Granted: 2001-05-16
Abstract: An image-display game system which can attract players for a long time to play a game can be implemented by presenting helping data of a0 to a63, and b1 to b5 beneficial in the course of a game to friends, and accordingly communications accompanying therewith can be stimulated and activated thereamong, and the game can be effectively utilized as a communications tool. Such image-display game system is so structured that the players' ID data IDn is communicable or exchangeable therein. With the other player's ID received, items beneficial in the course of the game or the helping data of 10 to 163, and b1 to b5 is generated based on the ID data, and is presented to the player. As a result, exchanging of the ID data IDn is activated among the players. The items presented based on the ID data IDn are determined by operating the ID data using an equation in FIG. 17 which is based on a predetermined rule, or in an operation processing by combining the ID data IDn and a random number R.
Patent TW-462115-B (TW)
Title: Fabrication method of salicide
Inventor: YAN YOU-SHENG
IPC: H01L21/768
Filed: 2000-09-08
Granted: 2001-11-01
Abstract: A fabrication method of salicide is disclosed, wherein gate oxide layer and polysilicon layer are formed on the substrate sequentially. Next, define the polysilicon layer and the gate oxide layer to form a gate structure, fabricate spacer on the sidewall of the gate structure, and form source/drain in the substrate. Then proceed a spacer etching step to reduce the width of the spacer. Deposit a metal layer on the substrate, proceed thermal processing, since the spacer is narrower, a wider, better quality salicide can be formed on the source/collector region to reduce the resistance and enhance the performance of the semiconductor device.
Patent TW-466668-B (TW)
Title: Peeling method of integrated circuit chip and the device thereof
Inventor: JUANG LING-YI
IPC: H01L21/68
Filed: 2000-09-18
Granted: 2001-12-01
Abstract: A peeling method of integrated circuit chip comprise the following steps: provide a substrate having an integrated circuit chip; fix the substrate having the integrated circuit chip; heat the projected area of the integrated circuit chip to be removed on the substrate from the opposing side of the substrate of the integrated circuit chip, so as to melt or thermally decompose the anisotropic conduction film (ACF) between the chip and the substrate; remove the integrated circuit chip in the direction non-perpendicular to the substrate finally. The peeling device of integrated circuit chip comprises a fixed machine to fix the substrate; a heating unit to heat the projected area of the integrated circuit chip on the substrate from the opposing side of the substrate of the integrated circuit chip; and a removal unit to remove the integrated circuit chip after being heated on the substrate.
Patent TW-486864-B (TW)
Title: Surface acoustic wave device
Inventor: MUKAI TAKAO
IPC: H03H9/02
Filed: 2000-10-11
Granted: 2002-05-11
Abstract: A surface acoustic wave device includes a piezoelectric substrate having a pair of substrate edges and an upper surface therebetween. The piezoelectric substrate has at least one inner edge which is in contact with a main region and extends from the upper surface toward a bottom surface of the piezoelectric substrate inside one of the substrate edges. An interdigital transducer is provided on the main region of the piezoelectric substrate such that a SH type surface acoustic wave excited by the interdigital transducer and having a wavelength of λ is reflected by the at least one inner edge. A distance L between the at least one inner edge and the corresponding one of the substrate edges is substantially equal to about 8λ or less.
Patent TW-526518-B (TW)
Title: Substrate processing apparatus
Inventor: YOSHIHARA KOUSUKE
IPC: H01L21/00
Filed: 2000-10-18
Granted: 2003-04-01
Abstract: A spin chuck for holding a wafer to the front face of which a resist solution is supplied, a cup for housing the spin chuck and forcibly exhausting an atmosphere around the wafer by exhaust from the bottom thereof, and an air flow control plate, provided in the cup to surround the outer periphery of the wafer, for controlling an air flow in the vicinity of the wafer are provided. Accordingly, a state of a special air flow at an outer edge portion of a substrate to be processed can be eliminated, thereby preventing an increase in film thickness at the outer edge portion.
Patent TW-494393-B (TW)
Title: Wide angular frequency domain roller balance apparatus
Inventor: GUO LI-HUA
IPC: G11B33/00
Filed: 2000-12-01
Granted: 2002-07-11
Abstract: A kind of wide angular frequency domain roller balance apparatus is disclosed in the present invention, in which a main body using the revolving spindle of the rotating body as the center of a circle is installed on the rotating body. One or multiple magnetically conducting rollers are installed inside the main body, in which these magnetically conducting rollers can have a ball shape, a cylinder shape, or any shape capable of rolling. A magnet is also installed inside the main body, in which the magnet is appropriately fixed inside the main body and can be provided with a magnetically conducting disk on its top. The outer edge of the magnetically conducting disk is concentric with the revolving spindle. A unit for stopping rolling, which surrounds the outer periphery of the magnetically conducting roller, is also installed inside the main body. Thus, it is capable of constructing a wide angular frequency domain roller balance apparatus that breaks through the limit of conventional balance apparatus and expands the application field.
Patent TW-497304-B (TW)
Title: Long band optical amplifier
Inventor: FLOOD FELTON AARON
IPC: H04B10/293
Filed: 2000-12-28
Granted: 2002-08-01
Abstract: The optical amplifier 5 includes a first gain medium having a first gain medium 10a contains a rare earth dopant and a first pump 20a that supplies optical energy at a first wavelength into this first gain medium 10a. The first pump operates at a pump wavelength that has a lower inversion saturation than the highest wavelength of absorption of the first gain medium. The optical amplifier further comprises a second gain medium 10b operatively coupled to the first gain medium 10a and a second pump 20b that supplies optical energy into the second gain medium.
Patent TW-480231-B (TW)
Title: Method for manufacturing bicycle frame and the structure so made
Inventor: MILES LYNN ALLAN
IPC: B62K19/02
Filed: 2000-12-30
Granted: 2002-03-21
Abstract: The present invention provides a method for manufacturing a bicycle frame and the structure and is characterized in that a ferrous frame is positioned in a mould and a plastic surface layer is integrally formed around the frame by means of injection molding. The plastic surface layer completely covers the external surface of the ferrous frame and provides predetermined color and shape whereby it is possible to manufacture aesthetic, endurable, and shape-versatile bicycle frames with low costs.
Patent TW-I230036-B (TW)
Title: A method for reducing fungal infestation of plants, parts of plants, and seeds, and for promoting plant growth
Inventor: MERRITT DOUTHITT PRUITT
IPC: A01N43/80
Filed: 2001-02-16
Granted: 2005-04-01
Abstract: An inoculant tolerant, aqueous fungicidal composition, is provided which is substantially free of organic solvents, comprising a fungicidally effective amount of at least one fungicidally active compound; a stabilizing effective and nitrogen-fixing bacteria tolerant amount of a preservative; and at least one anionic surfactant. The composition is tolerant to nitrogen-fixing bacteria such as Rhizobium spp. when applied concurrently or sequentially to plant propagation materials such as seeds; the inventive compositions are storage stable, ready-to-apply (RTA), ecologically and toxicologically favorable and have good fungicidal efficacy.
Patent TW-492106-B (TW)
Title: Inspection method for thickness of film to be processed using luminous beam-splitter and method of film processing
Inventor: USUI TATEHITO
IPC: H01L21/00
Filed: 2001-02-27
Granted: 2002-06-21
Abstract: The present invention relates to an inspection method for thickness of film to be processed using luminous beam-splitter and method of film processing during the fabrication of semiconductor integrated circuit. Particularly, the present invention relates to an applicable inspection method for thickness of film to be processed and method of film processing capable of achieving desired film thickness by using plasma discharged etching so as to correctly inspect the film thickness of various film provided on the substrate. The differential value of interfered light with respect to the specific thickness of the first material to be process is assigned to a standard pattern with a wavelength as parameter. Next, a plurality of wavelengths are used to inspect the intensity of the interfered light relates to the second material having the same constituent as the first material, and the different value for the intensity of interfered light under inspection is calculated to obtain a real pattern with a wavelength as parameter. The thickness of the second material to be processed is calculated in accordance with above standard pattern and the real pattern of above differential value.
Patent TW-583343-B (TW)
Title: Plasma processing apparatus and dielectric plate adapted to be provided between a process chamber of a plasma processing apparatus and slot electrode guiding a microwave used for a plasma process
Inventor: HONGO TOSHIAKI
IPC: H01L21/3065
Filed: 2001-03-23
Granted: 2004-04-11
Abstract: A plasma processing apparatus applies a high-quality process to an object to be processed by preventing impurities from being generated due to a microwave transmitting through a dielectric plate. The dielectric plate is provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process. A thickness H of the dielectric plate has a predetermined relationship with a wavelength lambda of the microwave in the dielectric plate so that an amount of isolation of the dielectric plate due to transmission of the microwave is minimized. The wavelength lambda is represented by lambda=lambda0n, where lambda0 is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of the dielectric plate represented by n=1/(epsilont)<1/2>, where epsilont is a specific dielectric rate of the dielectric plate in a vacuum.
Patent TW-504692-B (TW)
Title: Method and architecture for DRAM defect management and status display
Inventor: HOU CHIEN-TZU
IPC: G11C11/00
Filed: 2001-04-20
Granted: 2002-10-01
Abstract: The present invention relates to a method and architecture for DRAM defect management and status display. A monitoring program tests the memory at regular intervals. A backup memory page is assigned first to temporarily store data of the memory page being tested. The data of the memory page being tested is copied to the assigned memory page and a table of look-aside buffer (TLB) is then established to correlate the memory page being tested with the assigned memory page. Through TLB, the memory page being tested is relocated to an assigned memory page and all normal access to that page by the program is redirected to the assigned memory page. When defect is found in a memory page being tested, the monitoring program blocks the memory page being tested continuously and redirects all access requests to the memory page being tested to an assigned memory page according to the TLB. The monitoring program also drives LCD to display information such as testing frequency, full testing report, defect found, memory utilization summary, actual memory size, and so on. Thus, DRAM maintains normal function and data integrity despite the defect.
Patent TW-490838-B (TW)
Title: Method to improve dual damascene structure using spacer formation
Inventor: LEE TZUNG-HAN
IPC: H01L23/522
Filed: 2001-05-10
Granted: 2002-06-11
Abstract: This invention provides a method to improve dual damascene structure using spacer formation. A spacer is formed on the sidewall of a dual damascene structure, which can prevent direct contact between the glue layer and the copper metal and avoid thinning the bottom layer of the glue layer caused by the via. Moreover, the formed spacer can enhance the structural strength of the dual damascene and improve gap-filling capability of seed layer and electroplated copper metal.
Patent TW-516175-B (TW)
Title: Method to improve the via resistance by increasing the contact area of via
Inventor: LEE TZUNG-HAN
IPC: H01L21/768
Filed: 2001-05-21
Granted: 2003-01-01
Abstract: A method to improve the via resistance is disclosed, in which metal conducting wires are processed by H2O2 plasma and O2 plasma to increase the contact area between the via and metal conducting wires. Copper in the metal conducting wire is processed by H2O2 plasma and O2 plasma so that copper is reacted with O2 to form copper oxide compound, the copper oxide compound is removed by cleaning with solution, and the area of the removed portion of metal conducting wire is increased so that the contact area between the metal conducting wires and via is increased, thereby the problem of via resistance being improved.
Patent TW-531433-B (TW)
Title: Pneumatic dust collector
Inventor: YAMAGUCHI MUNENORI
IPC: A47L9/28
Filed: 2001-05-25
Granted: 2003-05-11
Abstract: A pneumatic dust collector uses compressed air as power source and is characterized in that a switch (23) for turning on/off the pneumatic dust collector is set on a suction nozzle (22) that is mounted on a conduit (21) connected to a main body of the pneumatic dust collector to realize a pneumatic dust collector having a simple structure and improved operation efficiency.