Patent SG-11201807795Q-A (SG)
Title: Electrical connection structure, semiconductor package and method of forming the same
Inventor: HO DAVID
IPC: H01L25/00
Filed: 2017-03-16
Abstract: INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 111110111011010101111010111101101110011010111011111110111011111 International Bureau .. .... ..Yejd (10) International Publication Number ..... .....1 (43) International Publication Date WO 2017/160235 Al 21 September 2017 (21.09.2017) WIP0 I PCT (51) International Patent Classification: Singapore 138634 (SG). CHAI, Tai Chong; c/o Industry HO1L 21/56 (2006.01) H01L 25/00 (2006.01) Development, Institute of Microelectronics, 2 Fusionopolis HO1L 23/31 (2006.01) HO1L 23/538 (2006.01) Way, #08-02 Innovis Tower, Singapore 138634 (SG). BHATTACHARYA, Surya; c/o Industry Development, (21) International Application Number: Institute of Microelectronics, 2 Fusionopolis Way, #08-02 PCT/SG2017/050130 Innovis Tower, Singapore 138634 (SG). (22) International Filing Date: (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; 16 March 2017 (16.03.2017) P.O. Box 1088, Rochor Post Office, Rochor Road, Singa- (25) Filing Language: English pore 911833 (SG). (26) Publication Language: English (8 1 ) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, (30) Priority Data: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, 10201602014P 16 March 2016 (16.03.2016) SG BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (71) Applicant: AGENCY FOR SCIENCE, TECHNOLOGY DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10 HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, Connexis North Tower, Singapore 138632 (SG). KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, (72) Inventors: HO, David; c/o Industry Development, Insti- NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, tote of Microelectronics, 2 Fusionopolis Way, #08-02 In- RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, novis Tower, Singapore 138634 (SG). RAO, Vempati TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, — Srinivasa; c/o Industry Development, Institute of Micro- ZA, ZM, ZW. electronics, 2 Fusionopolis Way, #08-02 Innovis Tower, [Continued on next page] Title: ELECTRICAL CONNECTION STRUCTURE, SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE (54) = SAME = FIG. 1 (57) : Various embodiments may provide an electrical connection 100 structure. The electrical connection structure may include a first substrate having a first surface defining a cavity, and an inner wall defining a via ex- tending from the cavity. The electrical connection structure may also include — First substrate an interconnect structure provided in the via so that at least a portion of the interconnect structure protrudes into the cavity. The electrical connection structure may further include a second substrate having a second surface fa- — = = - at least a portion of the cing the first surface. The electrical connection structure may additionally in- 102 interconnect structure dude a connection element on the second surface. At least a portion of the protrudes into the cavity of connection element may be received in the cavity so that the connection ek - = = the first substrate ment is in electrical connection with the interconnect structure. = = Interconnect — structure at least a connection portion of the element is N 104 received in the cavity of in electrical connection = = first subst ate Connection = element Il .4 108 connection element on the second substrate kin M C C=:) Second substrate Il --.... IN 106 Il 0 N O WO 2017/160235 Al MIDEDIMOMOIDEIRMEMOMMINIMOIllOMMOVOIS (84) Designated States (unless otherwise indicated, for every SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, kind of regional protection available): ARIPO (BW, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, GH, SZ, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, RU, KZ, Published: TJ, TM), European (AL, AT, BE, BG, CH, CY, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, CZ, IT, RS, DE, — LT, SE, with international search report (Art. 21(3))