baber/WOPTO huggingface dataset:
Patent JP-H03213698-A (JP)
Title: Electric fan
Inventor: YAJIMA HATSUO
IPC: F04D27/00
Filed: 1990-01-17
Abstract: PURPOSE:To drive a fan in suitable air flow and prevent its stopping due to motion of a human body by changing air flow according to a distance measured with a distance sensor for measuring the distance against the human body. CONSTITUTION:When a power source is connected and ON of an automatic operation beginning switch 6 is judged with a control part 28, a transmitting command is send to the transmitting part of an ultrasonic sensor 25 from the control part 28, an ultrasonic wave Ha is radiated, a reflected ultrasonic wave Hb on a human body is received on a receiving part 27, and a received signal is sent to the control part 28. The control part 28 calculates the distance against the human body from difference between the time sending the transmitting command and the time receiving the reflected ultrasonic wave Hb, obtains the rotating speed according to the distance, transmits the rotating speed command to a driving part 29, and an electric fan is driven in the air flow according to the distance. When an airflow changeover switch is ON, a rotating speed command to set an air flow among strong, medium, and weak air flow, is transmitted. Nextly, when a control wind changeover switch is ON, a rotating speed command to set random air flow is transmitted.
Patent JP-S58123752-A (JP)
Title: Semiconductor device
Inventor: ISHII HIDEKAZU
IPC: H03F3/04
Filed: 1982-01-19
Abstract: PURPOSE:To prevent the fluctuation in resistance due to the fluctuation in signal voltage by a method wherein a voltage corresponding to but exceeding the signal voltage impressed on the resistor region is impressed on the semiconductor layer formed into resistor region. CONSTITUTION:The external resistors R1, R2 of amplifier 1 are provided on the one conductive type semiconductor region 7 separated from the adjoining elements by the separation parts 10, 11. The other semiconductor regions 12, 13 are formed on both sides of the resistors R1, R2 and the other resistors R3 is formed of the semiconductor region 7 between the regions 12 and 13. The voltage shifting circuits 16, 17 are respectively connected to both ends of the resistor R3. In the circuits 16, 17, the voltage at one end 9-3 of the resistor R3 is constantly held at a specified value higher than the output voltage of the amplifier 1 while the voltage at the other end 9-1 is constantly held at a specified value higher than the reference voltage (ground voltage). Through these procedures, the resistances R1, R2 may be prevented from fluctuating due to the fluctuation of the signal voltage since the inverse bias of the semiconductor region comprising the resistors R1, R2 and the region 7 comprising the resistor R3 is held constant regardless of the output voltage of the amplifier 1.
Patent JP-H03211871-A (JP)
Title: Manufacture of semiconductor device
Inventor: SHIMODA KOICHI
IPC: H01L21/8249
Filed: 1990-01-17
Abstract: PURPOSE:To eliminate an aligning margin between both an N<+> type buried layer and a P<+> type buried layer and to simultaneously form elements necessary for high and low isolation breakdown strengths by simultaneously forming N<+> and P<+> type buried layer forming regions of a nitride film pattern. CONSTITUTION:An oxide film 102 is formed on a semiconductor substrate 101, and nitride films 104 to become Nu and P<+> type buried layer forming regions 106, 110 are selectively formed on the film 102. Thereafter, the film 104 to become the region 106 is removed, N type impurity is selectively ion implanted to the region from which the film 104 is removed, and the entire surface is oxidized to form an N<+> type buried layer 108. Then, a nitride film 107 to be come a P<+> type buried layer 110 forming region is removed, and P-type impurity is selectively ion implanted on the region from which the film 107 is removed to form a P<+> type buried layer 110. Thus, an isolating margin between the layers 108 and 110 is eliminated, the layers 108, 110 are isolated, and its isolation breakdown strength can be raised.
Patent JP-H08195412-A (JP)
Title: Method and apparatus for wire bonding
Inventor: YOSHIYAMA TAKAYUKI
IPC: H01L21/60
Filed: 1995-01-19
Abstract: PURPOSE: To restrain a wire from being cut, to obtain a required tail length stably and to prevent a bonding quality from being dropped by a method wherein the wire is made tension free in a fourth process in which the wire is easy to cut unexpectedly. CONSTITUTION: When a wire 2 is lowered to a capillary 1, it is landed on a land 5a for a chip 5, and a ball 2b is pressed to the land 5a. Then, the capillary 1 is raised, and the wire 2 is formed in a loop. After that, the capillary 1 is landed on an inner lead 4, and the wire 2 is pressed. Then, the wire 2 is easy to cut, but the wire 2 is set again to a tension free state. Then, when the capillary 1 is pressed sufficiently to the inner lead 4, the capillary 1 is raised again, and a tail 2a is derived from its tip part. At this time, the cutting accident of the wire 2 is easy to generate. However, since the wire 2 is in a tension free state, the cutting accident is not generated, and a required tail length can be obtained stably.
Patent JP-H02284663-A (JP)
Title: Hot spray gun
Inventor: ANSONII JIEI ROUTORIKO
IPC: B05B7/20
Filed: 1990-01-17
Abstract: PURPOSE: To make it possible to spray a low oxide coating film of an oxidizable thermal spray material without using an inert gas atmospheric chamber by providing a combustion gun means, a first surrounding inert gas means, a surrounding combustion gas means and a third surrounding inert gas means. CONSTITUTION: The combustion gun means 57 for generating a supersonic spray stream of a combustion product and a heat fusible thermal spray material in the finely divided from is provided in a thermal spray gun to be used for spraying the low oxide coating film of the oxidizable thermal spray material. A sheath gas means 84 for introducing a surrounding stream of a first inert gas adjacently surrounding the spray stream is arranged. The surrounding combustion gas means 128 for introducing a surrounding stream 174 of the second combustion gas adjacently surrounding the first surrounding stream is provided. Further, the surrounding inert gas means 150 for introducing a surrounding stream 176 of the third inert gas adjacently surrounding the second surrounding stream is arranged. Consequently, the low oxide coating film of the oxidizable thermal spray material is sprayed without using the inert gas atmospheric chamber.
Patent JP-S54100330-A (JP)
Title: Selective orthoalkylation of phenolic compound
Inventor: KAWAMATA MOTOO
IPC: C07C27/00
Filed: 1978-01-26
Abstract: PURPOSE: To obtain an alkylphenol having one or more o-alkyl groups useful as a raw material for preparing polyphenylene oxide in a high yield, by selectively alkylating the o-position of a phenolic compound, using a specific mixed catalyst.  
     CONSTITUTION: A phenolic compound of formula (R 1 , R 2 , R 3  and R 4  are H or aliphatic hydrocarbon groups, e.g. methyl or ethyl) having at least one hydrogen atom at the o-position and a 1W4C lower aliphatic saturated alcohol are catalytically oxidized in the presence of a catalyst comprising chromium oxide, tin oxide, iron  oxide, and sulfate radicals at a molar ratio of Cr 2 O 3 :SnO 2 :Fe 2 O 3 :So 4   --  of 100:0.1: 0.01:0.5W100:60:20:40 at 250W500°C in the gaseous phase to give an alkylphenol,  e.g. 2,6-dimethylphenol, having at least one o-alkyl group.  
     EFFECT: Long catalytic life, and suppressed unnecessary decomposition of the alcohol. 
     COPYRIGHT: (C)1979,JPO&Japio
Patent JP-H10207170-A (JP)
Title: Image forming device
Inventor: MAEHARA HIDEJIRO
IPC: G03G15/01
Filed: 1997-01-17
Abstract: PROBLEM TO BE SOLVED: To enable positional adjustment per line in a subscan direction at low cost by altering, in response to a signal indicating the timing of main scan, the number of dots or lines required until memory transfer starts, and providing a means for correcting the positions of right and left print images, and other means. SOLUTION: Print data stored in a frame memory 103 is transferred to two LD laser diode drive parts, 108 and 109, from first and second FIFO(fast in fast out) memories 106 and 107, respectively, according to a synchronizing signal produced by a writing synchronization processing part 105 in response to the synchronizing signal of a polygon motor, and it is subjected to printing. At the time, in the synchronization processing part 105, gate signals longer than actual paper in both the main-scan direction and subscan direction are set. In response to a signal indicating the timing of the main scan, the number of the dots or lines required until the memory transfer starts is altered, thereby correcting the positions of the right and left print images, and thus resist adjustment per line can be achieved by means of a low-cost structure.
Patent JP-H06241041-A (JP)
Title: Operating method of exhaust gas device for internal combustion engine and exhaust gas device mounted for said method
Inventor: TEEODOORU ABERUSU
IPC: F01N13/08
Filed: 1994-01-26
Abstract: PURPOSE: To reduce concentration of harmful gas components near an outlet of an exhaust system by providing one device in the exhaust system and affecting the exhaust gas flow in a direction in which the outlet speed is increased, independently of the internal combustion engine speed. CONSTITUTION: A terminal part of an exhaust system of an internal combustion engine is provided with an approximately oval tube section 3. In the tube section 3, one part of a passage wall is formed of a flap 4 eccentrically supported on a pin 5. The flap 4 specifies the outlet cross section from the tube section 3 to form the minimum outlet cross section Q1 , the maximum outlet cross section Q2 and an optional intermediate position. When the engine speed of the internal combustion engine is low, the minimum cross section Q1 is formed by an extension spring 6, pressure is increased to exhaust gas pressure approximately equal to exhaust gas pressure in the full rotation and discharged at a high speed. When exhaust gas pressure is increased with the increase of the engine speed, the flap 4 starts releasing against force of the spring 6.  Therefore, the outlet speed of exhaust gas is increased in the whole engine speed range.
Patent JP-S62164475-A (JP)
Inventor: MORI TAKASHI
IPC: A61H39/00
Filed: 1986-01-16
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S59132513-A (JP)
Inventor: KOUNO TSUKASA
IPC: G21B1/11
Filed: 1983-01-18
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S63174357-A (JP)
Title: Semiconductor integrated circuit device
Inventor: KAMEDA HIDEO
IPC: H01L27/144
Filed: 1987-01-13
Abstract: PURPOSE:To constitute a high sensitivity photosensor on the same chip as a circuit element using the long wavelength light such as infrared rays and the like by a method wherein the substrate of an IC is brought into the state of high specific resistance, and the lower part of a circuit element part is isolated by a high density p+ layer. CONSTITUTION:The p<+> type diffusion layer 2B, to be used for isolation of the lower part of the n<-> type epitaxially grown layer 5b of the related circuit element forming part of the B-region, is formed on the p<-> type substrate 1 having high specific resistance. In the photosensor of the part A, the light projected from a light-receiving part 10 is a long wavelength light, and even when a pair of electrons and holes are generated in the substrate 1 on the deep position from the silicon surface, the recombination of electrons becomes small, because said p<-> type specific resistance is high. As a result, the ultimate efficiency on the n<-> type epitaxial layer 5a can be improved, and a number of photoelectric currents can also be picked out.
Patent JP-S57122416-A (JP)
Title: Scanner correcting optical device
Inventor: YONEDA HITOSHI
IPC: H04N1/113
Filed: 1981-01-22
Abstract: PURPOSE:To correct an angle of fall of an optical scanning means, by providing the first, second and third cylindrical lens whose focal distances are f1, f2 and f3, respectively, placing the first and second lenses at distances of f1 and f2 from the scanning means, and placing the third lens at a distance of f3 from the recording means, in a laser recording device, etc. CONSTITUTION:The first cylindrical lens 4 whose focal distance is f1 is placed at a distance of f1 from an optical deflector 2, in the proximity of a recording spherical lens, and a laser light beam is condensed at a deflection point position in the direction falling at right angles to the main scanning direction. Subsequently, the second cylindrical lens 5 whose focal distance is f2 is placed at a distance of f2 from the optical deflector 2 and also at the side of a recording medium 3, and the laser beam is converted to parallel light beams. Also, the third cylindrical lens 6 whose focal length is f3 is placed at a distance of f3, and the laser beam is condensed on the recording medium 3. The optical adjustment is executed easily and no blur occurs by generating the parallel light beams between the optical deflector 2 and the recording medium 3, and also an elliptical spot having a desired shape is obtained by selecting the f3.
Patent JP-S5391995-A (JP)
Title: Production of carboxyl group-modified polyvinyl alcohol
Inventor: MORIYA TOUHEI
IPC: C08F2/00
Filed: 1977-01-24
Abstract: PURPOSE: A specific vinyl acetate-ethylenically unsaturated dicarboxylic acid compolymer is saponified under a specified condition to produce a carboxyl groupmodified polyvinyl alcohol useful as a sizing agent reactive with various kinds of metal ions. 
     COPYRIGHT: (C)1978,JPO&Japio
Patent JP-H02187014-A (JP)
Title: Charged particle beam lithography
Inventor: SHUDO YOSHIHIRO
IPC: H01L21/027
Filed: 1989-01-13
Abstract: PURPOSE:To optimize a drawing speed and improve the throughput by deducing an optimum table movement speed for each frame for drawing processing. CONSTITUTION:The j-th row main deflection region in the i-th frame region is defined as Mij. Then, the i-th, j-th, and n-th row three main deflection regions are selectively taken out from the main pattern region for each frame region. Those main deflection regions are Mij-Mmj in case of the j-th row. Pattern exposure ratios in these regions, i.e., ratios of exposure portions to the entire drawing region are evaluated. After completion of all evaluations, the pattern exposure ratios of the three main deflection regions are compared for each frame region to determine the main deflection region which has a maximum ratio. A table movement speed in that frame region is evaluated on the basis of that main deflection region and hereby there is effected the drawing for each main deflection region in that frame region at that movement speed.
Patent JP-H01183483-A (JP)
Title: Surface treatment of superconducting ceramic
Inventor: NIINO TOSHIFUMI
IPC: C01G1/00
Filed: 1988-01-19
Abstract: PURPOSE:To prevent a superconducting ceramic from internal fracture due to the freeze-thaw action of the water therein, by coating the surface of a superconducting ceramic with a silicone-based sealant to stop the water movement through said surface. CONSTITUTION:The surface of a superconducting ceramic is coated with a waterproof silicone-based sealant durable to liquefied nitrogen temperature. This coating prevents water movement through said surface, thus shielding the influence of the moisture in air on the ceramic. Therefore, when a superconducting ceramic is repeatedly dipped into liquefied nitrogen, the internal fracture of said ceramic due to the freeze-thaw action of the moisture in air can be prevented even taken out from the liquefied nitrogen into the air.
Patent JP-S60152849-A (JP)
Title: Coating agent for removing oil and dust from ventilating fan
Inventor: HAYAMA MUTSUKO
IPC: F24F7/013
Filed: 1984-01-19
Abstract: PURPOSE:To form coating agent for removing oil and dust from a ventilating fan with excellent coating film strength, adhesion property and at the same time with satisfactory removability by a method wherein a substance containing cellulose phthalate acetate resin and its plasticizing agent is used. CONSTITUTION:The titled agent contains cellulose phthalate acetate resin and its plasticizing agent. The plasticizing agent at least contains one of diethyl phthalate, ethyl phthalyl ethyl glycol and triacetin. 15-80pts.wt. is added to 100pts.wt. of cellulose phthalate acetate resion. The cellulose phthalate acetate resin easily dissolves in weak alkaline solution having a pH of about 11, especially easily in weak alkaline detergent such as laundry detergent, which is daily used at household and has a pH of 10-11, resulting in making the dissolution with alkaline detergent or the like unnecessary. Consequently, coating agent for removing oil and dust from a ventilating fan with excellent coating film strength and adhesion property and at the same time with satisfactory removability can be obtained.
Patent JP-H10203621-A (JP)
Title: Carrying conveyor
Inventor: SAITO HIROAKI
IPC: B65G21/02
Filed: 1997-01-20
Abstract: PROBLEM TO BE SOLVED: To prevent a conveyor frame from being warped in the up-and-down direction and in the right-and-left direction thereof by making grooves in a side which is relatively higher in temperature in the up-and-down direction thereof at a predetermined spacing in the direction of length of the conveyor frame and by making grooves in a side which is relatively higher in temperature in the right-and-left direction thereof at a predetermined spacing in the direction orthogonal to the direction of length thereof. SOLUTION: Grooves 51 having a width of Δd1 are spaced ΔL1 in the direction of length of the conveyor frame 45 having a length of L in a lower side which is relatively higher in temperature in the up-and-down direction of the conveyor frame 45, and grooves 52 having a width of Δd2 are spaced ΔL2 in the direction orthogonal to the direction of length of the conveyor frame 45 in a lower side which is relatively higher in temperature in the right-and-left direction of the conveyor frame 45. In this example, ΔL1 equals ΔL2 and is set about 20cm, and Δd1 equals Δd2 and is set about 1mm. A difference in thermal expansion caused by a difference in temperature of the conveyor frame 45 is absorbed by the grooves 51 and 52 which are made in the up-and-down direction and the right-and-left direction of the conveyor frame 45.
Patent JP-H07221289-A (JP)
Title: Manufacture of semiconductor device
Inventor: MITSUSAKA EIICHI
IPC: H01L29/78
Filed: 1994-01-27
Abstract: PURPOSE:To obtain a semiconductor device which prevents plasma damage by a method wherein a silicon nitride film is formed on a gate insulating film so as to be used as an etching stopper and the reduction of the gate insulating film is prevented. CONSTITUTION:When a WSix layer 17 and a polysilicon layer 16 are etched to form a gate electrode 19, the layers are not reduced because an SiN film 14 is formed on an SiO2 film 13. Thereby, even when the selection ratio of polysilicon to SiO2 is not made high, the SiO2 film whose film thickness is sufficient can be ensured while the shape of the gate electrode 19 is being kept good. In addition, since a film is thin, the detection of the etching end point of the WSix layer 17 and the polysilicon layer 16 for the formation of the gate electrode 19 is made easy because it is sufficient to reach a degree that the SiN film 14 is not removed completely. In addition, since a gate insulating film 13 is not overetched, it is possible to prevent plasma damage when the gate insulating film 13 and a semiconductor substrate 11 are etched.
Patent JP-H10206545-A (JP)
Title: Positron ct(computed tomograph)
Inventor: MORI SHINSUKE
IPC: G01T1/161
Filed: 1997-01-20
Abstract: PROBLEM TO BE SOLVED: To provide the reconstitution image of high resolution at a high S/N rate in a subject or a region of interest by increasing no volume of a memory accumulating projection data or reducing it while the projection data are accumulated for dispersion correction even in a simultaneous counting line not passing through the area which the subject occupies. SOLUTION: It is judged by an area judgement part 50 whether or not a simultaneous counting line mutually connecting a pair of photon detectors simultaneously detecting a photon pair generated with electron and position pair extinction out of the photon detectors constituting a ring 20 passes a subject 10. In a case where it is judged by the region judgement part 50 that the simultaneous counting line passes through the subject 10, a constant value is accumulated and added in the projection data accumulation area 60A of high sampling density. In another case where it is not judged, another constant value is accumulated and added in the projection data accumulation area 60B of low sampling density, and the projection data are accumulated in a t-θ memory 60.
Patent JP-H01183116-A (JP)
Title: Method of forming multi-layer electrode
Inventor: HOCHIDO YUKO
IPC: H01L21/3205
Filed: 1988-01-18
Abstract: PURPOSE:To prevent a tungsten film from being recessed and flatten the surface thereof, by forming an Si film as a lower layer base when a multi-layer film of high melting point metal is selectively caused to grow by a chemical vapor deposition method using halogenide of high melting point metal. CONSTITUTION:When a multi-layer film of metal such as tungsten, molybdenum, tantalum or titanium is selectively caused to grow by a chemical vapor deposition method using halogenide such as tungsten, molybdenum, tantalum or titanium, a second layer is formed on a first layer and a third layer is formed on the second layer and the like. A silicon (Si) film is formed as a lower base layer of the layers thus sequentially and selectively formed. For example, Si formed on tungsten 31 and 32 and SiO2 volatizes as SiF4 by a reduction reaction with WF6 of a gaseous material at an early stage of the reaction to serve as a starting agent of selective growth of W. As a result, tungsten can grow well even on the SiO2 21 and recesses of the tungsten film is not produced and the surface thereof is flattened, so that a multi-layer electrode forming method is simplified.
Patent JP-H04240958-A (JP)
Title: On-vehicle facsimile equipment
Inventor: MUTO KEISUKE
IPC: H04N1/00
Filed: 1991-01-25
Abstract: PURPOSE:To obtain the on-vehicle facsimile equipment in which deterioration of a picture of the facsimile equipment caused at changeover of a base station is prevented. CONSTITUTION:This facsimile equipment is provided with a latch circuit 205 and when a calling tone detection circuit 204 detects it that a communication signal is a facsimile communication signal and a wheel rotation signal detection circuit 206 detects it that a vehicle is driven, a lamp 213 is lighted to urge the vehicle stop for warning.
Patent JP-S60152061-A (JP)
Title: Manufacture of semiconductor device
Inventor: TOYOOKA TETSUO
IPC: H01L29/732
Filed: 1984-01-19
Abstract: PURPOSE:To realize graft-base structure without increasing the number of mask processes by simultaneously diffusing ion-implanted boron for forming a base region and arsenic for forming an emitter region. CONSTITUTION:An N<+> type collector wall layer 2 is formed in an N<-> type epitaxial layer 1 and silicon oxide films 3 and polycrystalline silicon 4 are formed selectively on the layer 1 while openings are shaped to external base region forming sections. Boron implanting layers 5 are formed in the openings, a resist layer 6 is applied on the whole surface, and the layer 6 is etched and the layers 6 are buried in the opening sections. Arsenic implanting layers 7 are shaped to sections from which the silicon 4 is removed, and boron implanting layers 8 are formed to sections from which the layers 6 are removed. Boron and arsenic are diffused and treated at the same time to shape base-emitter regions at an instant. Accordingly, graft-base structure is formed, and aluminum electrodes 9 are formed.