Patent DE-102006024126-A1 (DE)
Title: Device for drying crystallizable synthetic material, comprises a processing space for uptake of the synthetic material, feed- and discharge openings for the synthetic material, process gas feed mechanisms, and process gas exhaust systems
Inventor: GEISSBUEHLER HANS
IPC: C08G63/80
Filed: 2006-05-22
Abstract: The device for drying crystallizable synthetic material, comprises a processing space (12) for uptake of the synthetic material, a partition wall (13) for division of the processing space into a first compartment and a further compartment, which are connected by a free space for the passage of the synthetic material, openings (15, 35) for feeding the synthetic material into the first compartment, discharge openings (16, 36) for synthetic material from the further compartment, mechanisms (17, 37) for feeding a process gas into a bottom area of the processing space, and exhaust systems. The device for drying crystallizable synthetic material, comprises a processing space (12) for uptake of the synthetic material, a partition wall (13) for division of the processing space into a first compartment and a further compartment, which are connected by a free space for the passage of the synthetic material, openings (15, 35) for feeding the synthetic material into the first compartment, discharge openings (16, 36) for synthetic material from the further compartment, mechanisms (17, 37) for feeding a process gas into a bottom area of the processing space, and exhaust systems (19, 39) for discharge of the process gas in an upper area of the processing space. The compartments of the type of sectors or segments are intended in a common, nearly rotationally-symmetrical housing mantle that exhibits a radius Rb at the bottom region. The center of the discharge openings has a minimal distance S from the walls of the other compartment and the ratio S/Rb is larger than 0.43. The first- and other compartment have a surface area of Ag and Ak respectively with the ratio of 2-3. The radius of the housing mantle in the upper region is equal to the radius of the housing mantle in the bottom region. The bottom region is limited downwardly by a perforated plate, which is flowed through at certain points by the process gas. The free space is formed by a hole in the partition wall and comprises of a portion of the lower edge of the partition wall. The discharge opening is arranged above the perforated plate and is closed by a closure element. The size of the discharge opening is adjustable. The lower edge of the feed opening is arranged below the upper edge of the partition wall. The partition wall extends between a point at the housing mantle and a further point at the housing mantle and has a maximum distance (E) from the in-between-lying housing mantle region and the ratio E/Rb is 0.6-1.1. The partition wall is composed of a wall component that includes an angle V of 70-100[deg] between both the contact points with the housing mantle. The partition wall is composed of two essentially straight wall components, which extend from the housing mantle to the center of the processing space and revert back to the housing mantle while including an angle W of 80-140[deg]. A space, into which at least an inlet opening for the process gas leads, is present below the perforated plate. A further processing space, which is enclosed by a rotationally symmetrical housing mantle, is present below the processing space. The process gas space is separated from the further processing space by means of a shut-off device in gas-tight manner. The processing space is arranged concentrically around the further processing space. The feed opening is arranged upstream to a metering mechanism. The discharge opening from the further processing space is arranged downstream to the metering mechanism. A level measuring device is present in the upper region of the processing space.