baber/WOPTO huggingface dataset:
Patent TW-396552-B (TW)
Title: High density trench type contact-free nonvolatile memory
Inventor: WU SHIE-LIN
IPC: H01L21/8247
Filed: 1998-06-30
Granted: 2000-07-01
Abstract: A nonvolatile memory with trench type floating gate is provided. The memory comprises the structures: plural field oxide formed on substrate, plural buried bit lines formed under field oxide, trench type floating gate formed between the bit lines on semiconductor substrate, tunneling dielectric formed between floating gate and semiconductor substrate, and inter-dielectric and control gate formed in turn on floating gate and field oxide. The process is firstly to proceed ion implantation with silicon nitride in use as mask, and form bit line on substrate and field oxide above bit line with thermal oxidation. Then with field oxide in use as mask, etch the substrate to form trench area; thereafter, form silicon oxynitride dielectric and floating gate in trench area. Finally, form inter-dielectric and control gate in turn, and define bit line.
Patent TW-374234-B (TW)
Title: Method for manufacturing a damascene interconnect structure
Inventor: LIU CHUNG-SHI
IPC: H01L21/768
Filed: 1998-07-07
Granted: 1999-11-11
Abstract: The present invention provides an improved process for manufacturing semiconductor interconnects. The process chiefly uses material selection of a dielectric layer and appropriate ion implantation to increase the etching selectivity of dielectric material, thus a damascene interconnect structure can be obtained without an etch stop layer.
Patent TW-565577-B (TW)
Title: Epoxy resin composition
Inventor: JANG SHIOU-RUNG
IPC: C08G59/00
Filed: 1998-07-29
Granted: 2003-12-11
Abstract: This invention discloses an epoxy resin composition, which comprises (A) a phenolic epoxy resin represented by formula (I), in which each R1 can be, the same or different, independently selected from groups composed of free hydrogen, C1-C6 alkyl group, C6-C10 aromatic group, C6-C10 aromatic group substituted with C1-C6 alkyl group, each R2 can be, the same or different, independently selected from groups composed of free hydrogen, C1-C6 alkyl group, C6-C10 aromatic group, C6-C10 aromatic group substituted with C1-C6 alkyl group, R3 can be, the same or different, independently selected from groups composed of free hydrogen, C1-C6 alkyl group, C6-C10 aromatic, C6-C10 aromatic group substituted with C1-C6 alkyl group and each R4 can be, the same or different, independently selected from groups composed of free hydrogen, C1-C6 alkyl group, C6-C10 aromatic, C6-C10 aromatic group substituted with C1-C6 alkyl group, and n is 0 or 1; (B) an epoxy resin different from the compound (I); and (C) hardener. The invented epoxy resin composition can be used as sealing materials, adhesives, printed circuit board materials, and for powder coating. When a composition contains the invented phenolic epoxy resin, moisture absorption and thermal expansion coefficient of a board material can be reduced, and fluidity and glass transition temperature during molding can be increased. Therefore, hest resistance, dimensional stability, reliability, moldability and crack reduction can be improved.
Patent TW-396449-B (TW)
Title: Method for manufacturing semiconductor wafer
Inventor: YAMAMOTO HIROAKI
IPC: H01L21/304
Filed: 1998-08-13
Granted: 2000-07-01
Abstract: The present invention provides a method for manufacturing a semiconductor wafer. A semiconductor ingot is sliced to obtain a wafer. A marginal part of the sliced wafer is chamfered. At least a front surface of the chamfered wafer is plane-ground and flatted. The front surface of the flatted wafer is spin-etched and a process distortion layer caused by the plane grinding is removed. A rear surface of the wafer of which a front surface is spin-etched is spin-etched. A surface of the wafer of which both the front and rear surfaces are spin-etched is ground to obtain a mirror or surface.
Patent TW-394820-B (TW)
Title: High efficiency reformed methanol gas turbine power plants
Inventor: JANDA GARY F
IPC: F01K21/04
Filed: 1998-11-02
Granted: 2000-06-21
Abstract: The present invention is a high efficiency reformed methanol (syngas) gas turbine power plant. The invention utilizes a Back Pressure steam Turbine(BPT) to maximize the thermal efficiency and the power output of a reformed methanol gas turbine power generation system. Methanol feed is reformed to syngas (H2 and CO2) prior to combustion in the BPT turbine. The endothermic reforming reaction, and the generation of the significant amount of process steam essential for reforming, recovers most of the useful heat in the gas turbine exhaust gas. The process steam pressure is set by the gas turbine inlet requirements, and can be referred to as low pressure steam. Additional heat in the gas turbine exhaust gas is recovered by generating the system's process steam at an elevated pressure, rather than the required low pressure. This high pressure steam is used to drive a BTP, generating additional power and the discharged low pressure steam from the BPT is used as the process steam for the methanol reformer.
Patent TW-436400-B (TW)
Title: Automatic carving machine for tool marks
Inventor: LI JEN-YI
IPC: B26D3/08
Filed: 1998-10-20
Granted: 2001-05-28
Abstract: This invention relates to an automatic carving machine for tool marks, consisting of two belt conveying machines, each composed of a motor, a machine table, and a belt set; and a tool mark forming machine disposed between the two belt conveying machines, composed of two transmission roller sets and a tool shaft set, wherein the tool shaft set is placed at the center of the two transmission roller sets. Each set of the transmission wheels includes an upper and a lower transmission PU rollers. The tool shaft set includes at least one roller-shaped tool and a passive wheel. The surface of the tool is affixed with vertical and horizontal blades distributing from one another at a specified, equidistant array for carving the same notch lines correspondingly. During operation, each belt-conveying machine drives a belt set through a motor for performing conveying on the machine table. A wood board is conveyed to the tool mark forming machine by one side of the belt-conveying machine to perform the specified vertical and horizontal tool mark carving treatment. The wood board is then sent out sequentially by another side of the belt-conveying machine. This invention, while being carried out in the industry, may complete the surface notch treatment of the board in an automated manner so as to save manpower and working-hour, and effectively prevent the twisted deformation of the plywood as a result of stress generated during the processing.
Patent TW-400521-B (TW)
Title: Semiconductor memory
Inventor: HIRABAYASHI OSAMU
IPC: G11C7/10
Filed: 1998-10-27
Granted: 2000-08-01
Abstract: This is a synchronous semiconductor memory device based on the double data rate (to be referred to as DDR hereinafter) scheme. It is composed of a first memory cell group and a second memory cell group, a first data line and a second data line, a data transfer circuit, a first output transfer circuit, a second output transfer circuit, and a data line control circuit. The data transfer circuit can connect the memory cell included in the first memory cell group to the first data line in parallel. It can also connect the memory cell included in the second memory cell group to the second data line in parallel. The first output transfer circuit transfers the first output data to one of the first and second data lines at the rising edge of the operation clock. The second output transfer circuit transfers the second output data to the other data line at the falling edge of the action clock. The data line control circuit switches the first data line to either the first or second output transfer circuit. It can also switch the second data line to either the first or the second output transfer circuit.
Patent TW-402788-B (TW)
Title: Manufacture method of the self-aligned contact (SAC) hole
Inventor: TAN WEN-YI
IPC: H01L21/768
Filed: 1998-11-02
Granted: 2000-08-21
Abstract: A manufacture method of the self-aligned contact (SAC) hole is disclosed, which comprises the steps of: providing a substrate having the drain and the source region formed thereon, the substrate being subdivided into the memory cell region and the peripheral circuit region; sequentially forming a gate oxide, a polysilicon, a silicide and a cap; removing the cap on the peripheral circuit region; defining the cap, the silicide, the polysilicon of the memory cell region, the silicide and the polysilicon of the peripheral circuit region to form the gate region; exposing the gate oxide; forming spacers on the cap of the memory cell region, the sidewall of the gate region, and the sidewall of the gate region on the peripheral circuit region; forming an insulating layer on the surface of the substrate; defining a bit line contact hole and a word line contact hole; and exposing respectively the source/drain of the memory cell region and the peripheral circuit region of the gate region.
Patent TW-531692-B (TW)
Title: Etching of multi-layered coated surfaces to add graphic and text elements to an article
Inventor: HUGHES JAMES G
IPC: B41M5/24
Filed: 1998-11-24
Granted: 2003-05-11
Abstract: A system and method for incorporating graphic and text elements on a surface of an article (20) without using paints or dyes applied to the surface, or adhering labels to the surface. This involves coating the surface with at least two layers of material (24, 26) and using an ablative etching device to form the desired graphics and text elements by etching into the coating layers (24, 26) to a depth that removes the material of the outermost, exposed layer (26), but which leaves intact at least a portion of the depth of an underlying layer (24). As a result graphics and text are formed, and that take on a color dependent on the color of the underlying layer (24) or layers exposed by the etching process. By making the colors so produced contrast the color of the outermost, exposed layer (26), the graphics and text elements become readily readable against the background color of the outermost layer (26).
Patent TW-412865-B (TW)
Title: Method for fabricating capacitors with hemispherical grains
Inventor: KIM DONG-WON
IPC: H01L21/822
Filed: 1998-12-29
Granted: 2000-11-21
Abstract: A method for fabricating a semiconductor device including a lower electrode layer provided at a surface thereof with hemispherical grains, an upper electrode layer, and a dielectric layer interposed between the lower and upper electrode layers. In accordance with this method, Si-dangling bonds existing on the surface of an amorphous silicon layer dry etched using a lower electrode layer pattern are controlled in such a fashion that an active migration of silicon atoms from the amorphous silicon layer surface is achieved. Accordingly, the growth of hemispherical grains on the surface of the amorphous silicon layer is effectively carried out. Thus, a lower electrode layer with an increased surface area is obtained. The amorphous silicon layer is formed with a passivation film of hydrogen which can be desorbed from that layer at a low temperature. Accordingly, it is possible to suppress the growth of natural oxide films on the surface of the amorphous silicon layer. The hydrogen is desorbed from the surface of the amorphous silicon layer during an annealing process carried out in the chamber of an ultra-high vacuum CVD device for the formation of hemispherical grains. As a result, a large amount of Si-dangling bonds are formed on the surface of the amorphous silicon layer. By virtue of such Si-dangling bonds, the migration of silicon atoms is enhanced during the formation of hemispherical grains.
Patent TW-561180-B (TW)
Title: Compositions containing a polyarylene ether and a dispersible reactive solvent and articles prepared therefrom
Inventor: D HOOGHE EDWARD LOUIS
IPC: C08L75/04
Filed: 1999-03-04
Granted: 2003-11-11
Abstract: A blend of a polyarylene ether and a dispersible reactive solvent such as a thermoplastic polyurethane or a cyclopentadiene can be processed at temperatures below the oxidative degradation temperature of the polyarylene ether, yet form an article upon cooling that substantially retains the properties of the polyarylene ether.
Patent TW-529055-B (TW)
Title: Ion implantation system
Inventor: CHOI KI-CHEOL
IPC: H01L21/265
Filed: 1999-03-29
Granted: 2003-04-21
Abstract: There is provided an ion implantation system, which is a pre-acceleration method or a post-acceleration method, and is characterized to additionally apply an AC (alternating current) power together with a DC (direct power) for extracting ionized ions from an ion supply source, and accelerating extracted ions to inject to a target in order to achieve uniform dose of ions to be injected by a certain depth vertically from the target surface into the target. The ion implantation system comprises an ion extractor for extracting ions to be injected into a target from an ion supply source with a certain applied power; a mass analyzer for selecting specific ions among the extracted ions from the ion extractor by forming different paths with respect to the weight of the respective ions; and an ion accelerator for accelerating the specific ions selected from the mass analyzer by a power selecting part comprising a DC (direct current) power source and an AC (alternating current) power source.
Patent TW-419682-B (TW)
Title: Process of iron-core cutting, polishing and plastic body covering with electromagnetic interference elimination
Inventor: WU YA-WEN
IPC: H01F41/02
Filed: 1999-05-14
Granted: 2001-01-21
Abstract: This invention is about the process of iron-core cutting, polishing and plastic body covering with electromagnetic interference elimination, especially, is about the product with an inner slot that is obtained by cutting and appropriately polishing a kind of formed iron-core. The surface of the inner slot formed by polishing can be made into a smooth, uniform and non-curved compressing face used for fixing and passing through row wires. When two formed iron-cores are used to clamp the row wires of a computer, the row wires can be completely clamped by the inner slot formed with a smooth compressing surface. Therefore, there is no incomplete clamping to generate the condition that the electromagnetic interference cannot be suppressed or decreased to the lowest value when this iron-core is used to eliminate electromagnetic interference, and thus can satisfy the test standard.
Patent TW-499410-B (TW)
Title: Chiral ligand and method for preparing cyanohydrins from aldehydes
Inventor: WANG BING-JIUN
IPC: C07C229/00
Filed: 1999-08-05
Granted: 2002-08-21
Abstract: A chiral ligand of the formula (II) or formula (II'), was synthesized. The chiral ligand (II) or formula (II') can chelate to metals to form a catalytic complex to catalyze the addition of trimethylsilyl cyanide to aldehydes to give optically active cyanohydrin, individually.
Patent TW-I238856-B (TW)
Title: Buffer chamber and method for integrating physical and chemical vapor deposition chambers together in a processing system
Inventor: REYNOLDS GLYN J
IPC: C23C14/56
Filed: 1999-11-11
Granted: 2005-09-01
Abstract: An apparatus [20] for processing a substrate [32] in a processing system having multiple process chambers [22] and a common transfer chamber [26] comprises a process chamber [22] having a process space [23] to receive and process a substrate [32] and a buffer chamber [24] defining a buffer space. The buffer chamber [24] is positioned beneath the process chamber [22] and is configured for interfacing with a transfer chamber [26] of a processing system for receiving a substrate [32] to be processed. A passage [43] is formed between the process and buffer chambers for moving a substrate between the process space and buffer space and a movable substrate stage [30] in the buffer space is operable for moving vertically in said passage [43] between a first position wherein the substrate is positioned in the buffer space and a second position wherein the substrate is positioned within the process space of the process chamber [22]. A sealing mechanism [42] is operable for sealing said passage to isolate the process chamber and a pumping system [52] is coupled to the buffer chamber for purging the buffer space of contaminants which may leak from the process chamber [22] to generally reduce the escape of the contaminants through the buffer chamber [24] and into the common transfer chamber [26] and other process chambers of a multiple chamber system.
Patent TW-463484-B (TW)
Title: Communication bus system
Inventor: KOLE MARCUS EGBERT
IPC: G06F13/40
Filed: 1999-12-08
Granted: 2001-11-11
Abstract: A communication bus system comprises a pair of conductors for carrying differential bus signals. A first and second station are connected by the pair of conductors. The system is operable in a selectable one of at least a low speed mode and a high-speed mode. The second station contains resistors each in series with a switch between the pair of conductors and a common node. The impedance connection circuit connects common node to the pair of conductors in the high-speed mode. The resistors provide an impedance to the pair of conductors that substantially matches the transmission line impedance of the pair of conductors. The common point is kept at a bias potential that differs from the reference potential of the receiving circuit. Preferably, a third switch is included between the nodes that join the resistors to the switches. This third switch is switched on and off together with the other switches.
Patent TW-429233-B (TW)
Title: Packing machine automation method and system thereof
Inventor: JIAN HUANG-HUEI
IPC: B65B57/02
Filed: 1999-12-27
Granted: 2001-04-11
Abstract: Disclosed is a packing machine automation method and system thereof, comprising loading the computer program of the packing machine automation to make the system operation speed reach the predetermined state of the computer program, and command the packing machine to enter communication state of respective computer module under normal operation. Respective computer modules are sequentially connected to an automatic feeding correction device, an automatic packing film compensation mechanism, and an automatic tool apron controller. The automatic feeding correction device accomplishes the computer module of feeding correction by means of a sensing input module receiving sensed waves reflected from the detected face of the feeding rod, and immediately memorizes and send out the sensed data to drive the motor output module. The automatic packing film compensation mechanism accomplishes the computer module of packing film compensation through a sensing input module receiving each sensing code location signal reflected from the packing film on the winding device, and immediately memorizes each sensing code and send out to drive the motor output device. The automatic tool apron controller controls accomplishes the computer module of the tool apron by more than one position scale affixed to a transmission mechanism and the tool apron, and immediately memorizes and send out the location data to drive the transmission mechanism and the tool apron.
Patent TW-450836-B (TW)
Title: Air processing unit
Inventor: SU CHING-SUNG
IPC: B01D46/10
Filed: 2000-01-20
Granted: 2001-08-21
Abstract: The present invention relates to an air processing unit, particularly a light catalyst air processing unit which uses a light not from a preset stimulating light source. The air processing mainly comprises the removal or reduction of air pollutants including tiny matters such as dirt in solid or gaseous state, biological or non-biological. Typical pollutants include microorganisms such as bacteria, toxic or foul volatile gas, particles in air in micro-grade, etc. Conventional air processing methods include using ultraviolet sterilization, electric dust collection, ozone sterilization, filtration or filtration with active carbon. Recently, the catalysis of light is used for sterilization and deodorant. These conventional methods have their advantages and limits in use, and have a different operation effect. The objective of the present invention is to provide an air processing unit that can satisfy the abovementioned characteristics while solving various possible drawbacks in the conventional methods, particularly an air processing unit that does not need a preset stimulating energy.
Patent TW-I226370-B (TW)
Title: Isolate of Antrodia camphorata, process for producing a culture of the same and product obtained thereby
Inventor: HUANG REN-JANG
IPC: C12P1/02
Filed: 2000-02-17
Granted: 2005-01-11
Abstract: The present invention relates a process for culturing isolates of Antrodia camphorata to provide a product useful in medical and nourishment fields. The present invention also relates to a novel isolate of Antrodia camphorata capable of growing in a suitable artificial medium, while exhibiting desired pharmacological activities, in particular anti-tumor activity. The utilization of potato dextrose broth and the synthetic medium containing fructose as major carbon source leads to a significant increase in the pharmacological activity of the cultures of A. camphorata.
Patent TW-562795-B (TW)
Title: Process for preparing saturated carboxylic acids having from one to four carbon atoms
Inventor: RUEDINGER CHRISTOPH DR
IPC: C07C51/25
Filed: 2000-03-09
Granted: 2003-11-21
Abstract: The invention relates to a process and an apparatus for preparing saturated carboxylic acids having from one to four carbon atoms by gas-phase oxidation at a reaction temperature of from 100 DEG C to 400 DEG C and pressures of from 1.2x10<5> to 51x10<5> Pa in the presence of saturated or unsaturated C4-hydrocarbons and mixtures thereof, an oxygen-containing gas and water vapor and in the presence of at least one catalyst, with part of the reactor outlet gas being recirculated in a reaction gas circuit and the acid concentration in the recirculated portion being reduced by means of a separation step, wherein the crude acid is separated from the reactor outlet gas by means of a countercurrent scrub.
Patent TW-434889-B (TW)
Title: Manufacturing method of capacitor
Inventor: HOU JIA-SHIN
IPC: H01L27/108
Filed: 2000-03-17
Granted: 2001-05-16
Abstract: A manufacturing method of capacitor is introduced, which is characterized in changing the material of the top electrode. That is, a silicide process is used to change the polysilicon top electrode to silicide top electrode. As a result, the traditional shortcoming in unstable capacity that degrades the device performance, caused by the depletion region between the poly-silicon layer and the dielectric layer, is solved.
Patent TW-466535-B (TW)
Title: Plasma processing method and apparatus with control of RF bias
Inventor: HOWALD ARTHUR M
IPC: H05H1/46
Filed: 2000-03-31
Granted: 2001-12-01
Abstract: A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f. bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.