baber/WOPTO huggingface dataset:
Patent TW-332344-B (TW)
Title: Semiconductor device with a programmable semiconductor element
Inventor: FRANCISCUS PETRUS WIDDERSHOVEN
IPC: H01L21/8247
Filed: 1997-07-21
Granted: 1998-05-21
Abstract: A semiconductor device with a programmable semiconductor element, which is formed by a floating gates transistor including a p-type semiconductor body connected to the surface. This programmable semiconductor element consists of the source and the drain with the n-type surface region form. The n-type surface region is located in the surface region and separated by the wave channel. The floating gate located on the top of the n-type surface region, and the gate is formed from the semiconductor material layer and separated by the inter electrical insulated layer and the main semiconductor body. Using the p-type semiconductor material is one of the characters of this floating gate, and the minimum insulated layer thickness between the floating gate and main semiconductor body is not more than 7nm.
Patent TW-510895-B (TW)
Title: Novel t-terphenyl compound
Inventor: KAWADA KENJI
IPC: C07C69/734
Filed: 1997-07-31
Granted: 2002-11-21
Abstract: A compound of the formula (I) [wherein R1-R13: H, halogen, lower alkyl, lower alkoxy etc., X: O-, -CH2-, -NR14- or -S(O)p-, Y: lower alkyl or lower alkenyl etc. and the process for preparing them, the medicine containing them, and a IgE selectively producing suppressor containing a substance which suppress the production of IgE during the mature B cell differentiated to to the antibody producing cell until the antibody is produced, while do not or weakly suppress the production of the simultaneously produced IgG, IgM and/or IgA.
Patent TW-379202-B (TW)
Title: Method of forming bulky high-strength carbon material artifacts
Inventor: CHOU HUEI-YU
IPC: C01B31/04
Filed: 1997-08-30
Granted: 2000-01-11
Abstract: A method to manufacture the bulky high strength carbon materials from mesophase powder through the procedures of cold isostatic pressing, carbonation and graphitization is disclosed. The carbon materials can be used as the corrosion and high-temperature-resistance structural parts, such as graphite crucible, shaft sealing, heater and electrode for EDM. The features of our method are to determine the critical heating rate of carbonization which depends on the size of carbon green compacts and to avoid cracking in carbonization. Detailed processes include the following steps: mesophase powders are molded by cold isostatic press at the pressure between 500 and 2000 kg/cm<2> to obtain a green density of 1.11~1.33g/cc. Then, the green compacts are heated to the temperatures between 400 DEG C and 600 DEG C in low atmosphere pressure (<600 torr). The heating rate after 600 DEG C depended on the size of green compacts and can be calculated from the experimental formula. After above heat treatment, the carbon materials with the density of >=1.60g/cc are obtained. For further graphitization treatment (>=2400 DEG C), the graphite materials with the density of 1.82g/cc can be made.
Patent TW-365550-B (TW)
Title: Method and apparatus for chemical processing semiconductor wafers
Inventor: WEN ZIYING
IPC: H01L21/304
Filed: 1997-09-09
Granted: 1999-08-01
Abstract: A method and apparatus for processing semiconductor wafer blanks comprises an enclosed chamber with upper and lower plates with a plurality of fluid openings leading from a source of chemical cleaning fluids, flushing fluid and dry nitrogen gas. The top plate also acts as a vacuum chuck to hold the wafer after the top surface has been cleaned and may rotate or oscillate to enhance the cleaning of the lower wafer surface. The method includes a chemical cleaning of the wafer top followed by processing the lower surface by pumping appropriate chemicals through the lower plate center toward the wafer periphery while the wafer is extremely close to the surface so that the outward moving fluids cover the wafer surface and are sparingly used. As the chemicals flow toward the periphery, their strength is renewed by the addition of new chemicals pumped through additional holes.
Patent TW-493099-B (TW)
Title: Method and apparatus for injecting liquid crystal material
Inventor: YAMAMOTO YUICHI
IPC: G02F1/1341
Filed: 1997-09-10
Granted: 2002-07-01
Abstract: A method for injecting a liquid crystal material into a liquid crystal panel which is provided with a liquid crystal injection port and an evacuation port is provided. The method includes the steps of: evacuating the liquid crystal panel; and after the evacuation step, injecting the liquid crystal material into the liquid crystal panel through the liquid crystal injection port with the liquid crystal material being pressurized while evacuating the liquid crystal panel.
Patent TW-365690-B (TW)
Title: Method for forming a silicide region
Inventor: KOICHI MIZOBUCHI
IPC: C23C14/58
Filed: 1997-10-06
Granted: 1999-08-01
Abstract: A method of forming a silicide layer 12 is disclosed herein. A siliciding metal layer 20 is formed over a silicon layer 10. These layers are then heated to a first temperature to form a silicide layer 12. This silicide layer 12 can be substantially of a first phase (e.g., C49, TiSi2). The silicide layer 12 and then be heated while applying a stress to form a silicide layer 12, possibly substantially of a second phase (e.g., C54, TiSi2). In the preferred embodiment, the stress is applied by depositing a cap layer 14.
Patent TW-363229-B (TW)
Title: PMOS single-poly non-volatile memory structure
Inventor: CHANG SHANG-DE TED
IPC: H01L29/788
Filed: 1997-10-23
Granted: 1999-07-01
Abstract: A P-channel single-poly non-volatile memory cell having P+ source and P+ drain regions and a channel extending therebetween is formed in an N-type well. An overlying poly-silicon floating gate is separated from the N-well by a thin oxide layer. A P-type diffusion region is formed in a portion of the N-well underlying the floating gate and is thereby capacitively coupled to the floating gate. Within this P-type diffusion area lies an N-type diffusion area which serves as the control gate for the cell. The P-type diffusion region electrically isolates the control gate from the N-well such that voltages may be applied to the control gate in excess of those applied to the N-well without creating a current path from the control gate to the N-well. Programming is accomplished by coupling a sufficient voltage to the floating gate via the control gate while biasing the source and drain regions so as to cause the tunneling of electrons from the P+ drain region of the cell to the floating gate. In some embodiments, an additional P-type diffusion region underlying the floating gate and separated therefrom by a layer of tunnel oxide serve as an erase gate for the memory cell. In such embodiments, erasing of the cell is accomplished by causing electrons to tunnel from the floating gate to the erase gate.
Patent TW-347607-B (TW)
Title: An electric machine
Inventor: DAVID MARK SUGDEN
IPC: G01P3/481
Filed: 1997-11-13
Granted: 1998-12-11
Abstract: An electric machine including a rotor and a stator, a chargeable mechanism being provided with one or other chargeable component to drive a driven component to move relative to a stator component, in which the current drive element being provided on a common current path of the chargeable mechanism.
Patent TW-350825-B (TW)
Title: Motor-driven 3-wheeled vehicle
Inventor: AREGGER KURT
IPC: B62D37/00
Filed: 1997-12-01
Granted: 1999-01-21
Abstract: A motor-driven 3-wheeled vehicle, having 2 parts (1, 2) that can be tilted around its longitudinal axis, having the rear part (2) a chassis for 2-track wheels (6) while the front part (1), which can be tilted relative to this rear part (2), accommodates the driver^s seat (22) connected to the front end of the front vehicle part (1), there is a tiltable front wheel suspension (11) to which the front wheel (7) and the engine (8) and gears (9) for the front-wheel drive are attached. The two vehicle parts (1,2) that can be tilted relative to each other each support or form a body (44,52) which can also be designed for the front part (1) as a monocoque and forms a closed heatable driver^s cabin (45).
Patent TW-375791-B (TW)
Title: A process for producing capacitor for integrated circuit
Inventor: Sui xiao-lin
IPC: H01L21/70
Filed: 1998-01-05
Granted: 1999-12-01
Abstract: A process for producing a capacitor for integrated circuit in which after the forming the lower electrode of capacitor, titanium is deposited on the surface of said lower electrode to form a titanium silicide electrode film; then a fast thermal annealing with high temperature is applied to precipitate said titanium silicide into coarse semispherical chips so as to increase the surface of capacitor, and hence increase the capacitance of capacitor without affecting the integration of integrated circuit and without changing the original circuit layout structure.
Patent TW-379258-B (TW)
Title: Anode oscillation system for electroplating bath
Inventor: SHIU WU-CHIUAN
IPC: C25D17/08
Filed: 1998-02-24
Granted: 2000-01-11
Abstract: A kind of anode contains oscillation system disposed in an electroplating bath, for housing electrolysis solutions and having an anode rod across the top of the electroplating bath with plural grille bags stuffed with covering metal shanging on it. Wherein, the anode rod is disposed freely over the top of the electroplating bath and contains each on both sides a buffering pad in contact with the inner wall of the electroplating tank correspondingly, bottom wheels which rool on a bearing plate facing the wall of the electroplating bath, and a vibration motor on the side facing upward. Steady revolution of the vibration motor generates corresponding oscillations to the anode rod and the grille bags and the covering metals inside the grille bags keeps sinking down as being reduced during electrolysis. This facilitates the identification of the covering metals in the grille bags for proper refilling and thus assures uniform thickness of the electroplating coating.
Patent TW-451356-B (TW)
Title: Method for removing redeposited veils from etched platinum
Inventor: HWANG JENG H
IPC: H01L21/02
Filed: 1998-03-12
Granted: 2001-08-21
Abstract: A method of etching a platinum electrode layer disposed on a substrate. The method comprises providing a substrate supporting a platinum electrode layer, an insulation layer on the platinum electrode layer, and a resist layer on the insulation layer. A portion of the insulation layer is etched by employing a plasma of an etchant gas to break through and to remove the portion of the insulation layer from the platinum electrode layer to expose part of the platinum electrode layer. The exposed part of the platinum electrode layer is then etched by employing a plasma of an etchant gas comprising argon. The etched platinum electrode layer is subsequently overetched by employing a high density plasma of an etchant gas to remove redeposited veils from the etched platinum electrode layer. The etched platinum electrode layer is employed in a semiconductor device.
Patent TW-429457-B (TW)
Title: Short channel device
Inventor: WANG MU-JIUN
IPC: H01L21/28
Filed: 1998-04-03
Granted: 2001-04-11
Abstract: A short channel device can be used to monitor the damage caused by the deep-submicron plasma etching process. The structure of the device includes a diffusion region in a semiconductor substrate, and a gate stack on the semiconductor substrate. The gate body is zigzag distributed on the diffusion region, and is made of, for example, polysilicon layer. The diffusion region is divided into a plurality of source regions and a plurality of drain regions distributed on the two sides of the gate stack of the semiconductor substrate. The source region is electrically connected to a comb-shaped source electrode via a plurality of contacts. The drain region is electrically connected to a comb-shaped drain electrode via a plurality of contacts. On the semiconductor substrate, an extended conductive layer is further provided for electrically connecting to the gate stack. The top structure of the extended conductive layer is of a polygon, and the extended conductive layer is made of, for example, polysilicon layer.
Patent TW-409291-B (TW)
Title: Self-cleaning focus ring
Inventor: KHOLODENKO ARNOLD
IPC: H01L21/205
Filed: 1998-04-20
Granted: 2000-10-21
Abstract: A self-cleaning focus ring (90) for processing a substrate (25) in a plasma in a plasma zone, comprises a dielectric barrier (92) with a focusing surface (95) for directing and focusing a plasma onto a substrate surface, and an electrical conductor element (100) abutting at least a portion of the dielectric barrier (92). The conductor element (100) is electrically charged to attract the plasma ions toward the focusing surface (92) of the dielectric barrier (92), whereby the energetic impingement of the plasma ions on the focusing surface (95) reduces the formation of deposits on the dielectric barrier (92).
Patent TW-478966-B (TW)
Title: Desk rice milling device
Inventor: SAKUMA FUMIO
IPC: B02B1/00
Filed: 1998-06-05
Granted: 2002-03-11
Abstract: The present invention relates to a desk rice milling device, which comprises: a motor; rice milling vanes which are inserted on the front end of a driving shaft rotating along with the motor and rotatable with the driving shaft; a rice milling basket having a cylindrical peripheral part concentrical to the driving shaft and a round bottom having an opening passing through the driving shaft and housing the rice milling vanes; a bran box having a cylindrical peripheral part concentrical to the driving shaft and a round bottom having an opening passing through the driving shaft and housing the rice milling basket; an enclosure housing the rice milling vanes which can be separately installed/uninstalled, the rice milling basket and the bran box, while fixedly housing the motor; a metal net mounted on the periphery of the rice milling basket. When milling rice, unpolished rice is loaded into the rice milling basket. The unpolished rice is agitated by rotation of the rice milling vanes, by which the unpolished rice is rubbed against the meshes of the wire net on the lateral peripheral part of the rice milling basket by its centrifugal force, by which the bran is chipped off. The chipped off bran is splashed outward from the meshes by the centrifugal force and is dropped into the bran box.
Patent TW-444076-B (TW)
Title: Environmentally friendly water resin moisture-permeable water-proof processed fabric and the process method
Inventor: CHEN YI-GUANG
IPC: D06N3/14
Filed: 1998-06-25
Granted: 2001-07-01
Abstract: This invention describes the environmentally friendly water resin moisture-permeable water-proof processed fabric and the process method which utilizes foam coating process for the underlying layer coating and hydrophilic water PU resin to perform paste coating on the surface layer. This can enhance the touch and fullness feeling and high moisture permeation of the fabric due to the foaming effect. The use of hydrophilic PU resin for paste coating can also render the fabric of water-proof and abrasion resistant characteristics. Compared with traditional solvent resin coating, better touch feeling, water pressure resistance and abrasion resistance can be achieved by the present invention. The product value is improved by replacing traditional solvent resin coating with hydrophilic water resin coating and thus granting the fabric excellent properties and environmentally friendly concept.
Patent TW-565745-B (TW)
Title: Compositions of matter, resist structures including a layer of electrically conductive polymer having controlled pH and methods of fabrication thereof
Inventor: ANGELOPOULOS MARIE
IPC: H01B1/12
Filed: 1998-08-04
Granted: 2003-12-11
Abstract: The present invention is an electrically conductive polymeric composition of matter having a controlled pH and structures fabricated therewith and methods of fabrication thereof having: a surface; a plurality of layer on the surface; at least one of the plurality of layers is formed from an energy sensitive material; at least another layer is formed from an electrically conductive polymer; the electrically conductive polymer contains acid functionality; and the electrically conductive polymer has a predetermined pH. The pH is controlled by additives mixed in with the electrically conductive polymer or by constituents on the electrically conductive polymer. The electrically conductive polymer is preferably a top layer. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resist from electron beams. The compositions are also useful in applications as static dissipation, electromagnetic interference shielding, corrosion protection, electroplating, and wiring.
Patent TW-412747-B (TW)
Title: Semiconductor storage device
Inventor: SHIMAZAKI YASUHISA
IPC: G11C11/419
Filed: 1998-12-14
Granted: 2000-11-21
Abstract: A semiconductor storage device controls crosstalk of write data to read data during reading and writing operations performed in the same cycle. The device has a plurality of word lines WL, a plurality of bit lines LBL, memory cells CELL which are connected to the word lines and the bit lines, reading global bit lines RGBL connected to a sense amplifier SA and writing global bit lines WBGL connected to a write amplifier WA. A selection circuit YSWn selectively connects the reading and writing global bit lines with the local bit lines. For first and second writing global bit lines arranged between first and second reading global bit lines, a distance between the first writing global bit line and the first reading global bit line, or a distance between the second writing global bit line and the second reading global bit line being is longer than a distance between the first and second writing global bit lines. Alternatively, the writing and reading global bit lines are formed in different wiring layers in the substrate of the device.
Patent TW-418406-B (TW)
Title: Soft magnetic nickel-iron-alloy with less coercive field strength, high permeability and improved corrosion resistance
Inventor: HATTENDORF HEIKE
IPC: C22C19/03
Filed: 1999-01-19
Granted: 2001-01-11
Abstract: A soft magnetic Iron Nickel alloy with a Nickel content of 35-65 mass % and one or more of Rare Earths Cerium, Lanthanum, Praseodym or Neodym as well as impurities caused by melting is proposed where the sum of Rare Earths lies between 0.003 and 0.05 mass %.
Patent TW-512184-B (TW)
Title: Protection method of metal lines
Inventor: JANG SHIUN-MING
IPC: C23C16/44
Filed: 1999-01-28
Granted: 2002-12-01
Abstract: Since low-k interlevel dielectric (ILD) material or intermetal dielectric (IMD) material is a must for the IC of high integration, no matter whether spin-on-glasses (SOGs) or fluorine-doped silicon glass (FSG) are used, the metal lines are under the shadow of corrosion, moisture or fluorine ion, respectively, to form so-called ""mouse-bites"" (see Fig. 1) problem which increases resistvity of metal lines and degrades the reliability in the low-k application. A protection method is provided in the present invention particularly that metal lines is prevented from the attack of surrounding etching agents. The characteristics of the present invention comprise: a sufficient protection of metal lines is provided by a voidless silicon oxide spacer deposited by ozone-assisted CVD wherein the thickness of silicon oxide spacers is equal to or larger than that of said spacer on top surfaces of metal line; that is, the complete protection of metal lines is formed and the so-called ""mouse-bite"" problem can be avoided.
Patent TW-417309-B (TW)
Title: Color microlenses and a method for creating
Inventor: LI ZONG-FU
IPC: H01L31/0232
Filed: 1999-03-31
Granted: 2001-01-01
Abstract: The making and use of color microlenses in color image sensors and color display devices is described and claimed. The color microlenses combine the function of a colorless microlens and a color filter into a single structure simplifying the fabrication of, and increasing the reliability of display devices and image sensors using the described color microlenses.
Patent TW-408193-B (TW)
Title: Method of removing polymers from the contact holes on the surface of the semiconductor chips
Inventor: YANG CHAN-LON
IPC: C23F4/00
Filed: 1999-04-01
Granted: 2000-10-11
Abstract: This invention provides a method of removing polymers from the contact holes on the surface of the semiconductor chips. The surface of the semiconductor chip has a substrate, a silicon nitride layer, a silicon oxide layer, and a photoresist layer. The photoresist layer and the silicon oxide have contact hole being etched to the surface of silicon nitride layer. The polymers remained in the contact holes that are formed during the etching of said silicon oxide layer. The method uses the oxygen and argon to perform the ashing process, and the oxygen flow is controlled between 50 to 2000 sccm, and the argon flow is between 50 to 500 sccm. The ashing process can completely remove the photoresist layer covered on the silicon oxide layer and the polymer remained and attached in the contact holes.
Patent TW-440914-B (TW)
Title: CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance
Inventor: MERRILL RICHARD B
IPC: H01L27/146
Filed: 1999-04-20
Granted: 2001-06-16
Abstract: An active CMOS pixel or pixel array and method for manufacturing uses silicides to improve sheet conductivity of polysilicon and diffusions and for improved conductivity of silicon to metal connections without downgrading the photon sensing performance of the pixels. Masks are used in manufacturing of the pixels by selectively masking photon sensors from the optical opaqueness of silicides and photon sensor related circuit elements from silicide induced photon sensor dark current leakage while allowing formation of silicides for providing highly conductive contacts between. Silicides are used for improving the sheet conductivity of polysilicon and diffusions in the readout transistors and for improved conductivity of silicon to metal line connection pads.
Patent TW-518411-B (TW)
Title: Solid state microanemometer
Inventor: GENOVA PERRY A
IPC: B81B1/00
Filed: 1999-07-01
Granted: 2003-01-21
Abstract: A solid state microanemometer is micromachined from a bonded silicon wafer comprising two silicon layers. The microanemometer comprises a first semiconductor wafer doped with an impurity having an upper planar surface and a lower planar surface with a peripheral edge; and a second semiconductor wafer bonded to the first semiconductor wafer having an upper planar surface; a lower surface; and a cavity having a peripheral edge and a peripheral margin defined on the upper planar surface and bounded by the peripheral edge of the cavity wherein the lower planar surface of the first semiconductor is bonded to the peripheral margin of the cavity so as to at least partially close the cavity wherein 0.025 to 99% of the peripheral edge of the lower planar surface of the first semiconductor overlaps with the peripheral edge of the cavity.
Patent TW-432420-B (TW)
Title: Cold cathode electronic device, and field emission luminous device and cold cathode luminous device each includes same
Inventor: YAMAURA TATSUO
IPC: H01J29/46
Filed: 1999-07-20
Granted: 2001-05-01
Abstract: The composition of cold cathode electronic device in this invention has cathode electrode, gate electrode and anode electrode, in which gate voltage is individually added between gate electrode and cathode electrode. When adding anode voltage in between the cathode electrode and the anode electrode, electrons emitted from cathode by using electric field emission are made to reach at least any one side within gate electrode and anode electrode. The feature is described as follows. On the electrode of at least any one side within gate electrode and anode electrode, at least one part uses hydrogen-occluded metal.