baber/WOPTO huggingface dataset:
Patent TW-360767-B (TW)
Title: Once-through blower
Inventor: YOSHIHASHI MAKOTO
IPC: F04D29/42
Filed: 1998-07-10
Granted: 1999-06-11
Abstract: To provide a once-through blower the blowing characteristics of which being improved by controlling the air current induced by the once-through blower per se, and the overall air loss being minimized, and obtaining air currents with highest stability and efficiency. A once-through blower including a once-through impeller (8) is described. The blower includes a blowout duct (10), a stabilizer (13) and a scroll casing (9). The stabilizer (13) provided at an end of the blowout duct (10) so as to face the once-through impeller (8). The scroll casing (9) is provided at the back of the once-through impeller (8) and connected to the blowout duct (10). The stabilizer (13) has a curved surface (18) which is formed along an arc (15). The diameter of the arc (15) is 103% or more of that of the once-through impeller (8). The scroll casing (9) has an interior curved surface (19) which is formed along a casing arc. The casing arc is concentric with the arc center (21). A clearance between a predetermined outer peripheral point (23) of the once-through impeller (8) and the inflow-side end of the scroll casing (9) is set so as to become 3% or more of the diameter of the once-through impeller (8).
Patent TW-434716-B (TW)
Title: Position detection technique, device, semiconductor substrate and exposure mask
Inventor: MIYATAKE TSUTOMU
IPC: G03F9/00
Filed: 1998-07-28
Granted: 2001-05-16
Abstract: The present invention relates to a position detection technique, device, a semiconductor substrate and an exposure mask. The exposure surface of a wafer to be exposed is formed with a wafer mark having edges for scattering incident light. The edge of the wafer mark has a curved portion whose image vertically projected upon a plane in parallel to the exposure surface has a curved shape. The surface of an exposure mask is formed with a mask mark having edges for scattering incident light. The edge of the exposure mask has a curved portion whose image vertically projected upon a plane in parallel to the surface of the exposure mask has a curved shape. The wafer and exposure mask are juxtaposed with and spaced apart by a gap from the exposure surface of the wafer. Illumination light is applied to the curved portions of the edges of the wafer and mask marks. Light scattered from the wafer and mask marks is observed along a direction oblique to the exposure surface to thereby detect a relative position of the wafer and exposure mask.
Patent TW-469426-B (TW)
Title: Disc cartridge
Inventor: MEGURO HIROSHI
IPC: G11B23/03
Filed: 1998-08-03
Granted: 2001-12-21
Abstract: A disc cartridge for housing a magnetic disc of an increased recording capacity includes recording/reproducing apertures formed in the main cartridge body portion for exposing a portion of a signal recording area of the disc-shaped recording medium to outside across the inner and outer rims of the disc-shaped recording medium. The disc cartridge also includes a shutter member having shutter portions for opening/closing the recording/reproducing apertures and supporting portions provided on both sides of the direction of movement of the shutter portions and supported for movement by the main cartridge body portion and movement guide portions provided on both sides along the width-wise direction of the recording/reproducing apertures which is parallel to the movement direction of the shutter member. The supporting portions are engaged with the movement guide portion for movement. The recording/reproducing apertures are located so that one opening end facing the outer rim of the disc-shaped recording medium is located between the movement guide portions and a lateral side of the main cartridge body portion. The supporting portions of the shutter member are formed with cut-outs adapted for opening the recording/reproducing apertures as far as one opening edges of the apertures when the shutter member has been moved to a position of opening the recording/reproducing apertures.
Patent TW-561174-B (TW)
Title: Process for improving the green strength and processability of ethylene/alpha-olefin/diene polymers, polymers made by the process, and process for making articles from the polymers
Inventor: ROWLAND MICHAEL E
IPC: C08J3/24
Filed: 1998-08-26
Granted: 2003-11-11
Abstract: A process for improving the green strength of ethylene/alpha-olefin/diene polymers is described comprising (A) selecting an ethylene/alpha-olefin/diene polymer having a Mooney viscosity at 125 C up to about 80 and a percent gel (% gel) up to about 30 percent and (B) partially crosslinking the ethylene/alpha-olefin/diene polymer selected in step (A) to make a modified ethylene/alpha-olefin/diene polymer satisfying the equations MV <= 100 and W <= (MS2-MS1/MS1) wherein MV is the Mooney viscosity of the modified polymer, MS1 is the melt strength in centiNewtons of the polymer selected in step (A) at 110 C, when formulated according to ASTM D3568#2, MS2 is the melt strength in centiNewtons of the modified polymer produced by step (B) measured under the same conditions, and W is at least 0.3. Modified ethylene/alpha-olefin/diene polymers obtainable according to the above process or satisfying the equation: MS2 >= (MV/X + %gel/Y)Z are also described in which MS2, MV and %gel of the modified polymer are defined as defined above, X is 50, Y is 20, and Z is 40. Further described is a process for making an article comprising an ethylene/alpha-olefin/diene polymer and intermediates for making the modified ethylene/alpha-olefin/diene polymers.
Patent TW-386310-B (TW)
Title: Method of producing microinductor and structure thereof
Inventor: LIN TZUNG-HUEI
IPC: H01L29/00
Filed: 1998-10-30
Granted: 2000-04-01
Abstract: The present invention provides a method of producing a micro inductor and a structure thereof. The inductor substrate of the microinductor comprises a substrate, an insulation layer, a first metal layer, a first dielectric layer, a barrier layer, a second metal layer, an anti-reflective layer, a second dielectric layer, a third metal layer, a third dielectric layer, and a protective layer, etc. The production method comprises using a photolithography technique and an etching technique to etch off the protective layer, the third dielectric layer, the third metal layer and the second dielectric layer, thereby forming a contact; using a wet etching technique to etch off the anti-reflective layer of the contact; using a wet etching technique to etch off the second metal layer through the contact to form a micro-tunnel; and using a micro-electroplating technique to grow a high ferromagnetic material in the micro-tunnel thereby forming a structure of the microinductor to greatly increase the inductance and Quality Factor of the microinductor and increase the work efficiency.
Patent TW-394814-B (TW)
Title: Thermal engine with improved efficiency
Inventor: ZIEGLER MARTIN
IPC: F01K25/06
Filed: 1998-11-16
Granted: 2000-06-21
Abstract: The invention concerns a method and a thermal engine for the conversion of thermal energy (Qextern) into mechanical energy (Wextern), the thermal engine comprising a first thermodynamic cyclic process (steam cyclic process) and a second cyclic process (gas cyclic process), the waste heat (QD) of the first cyclic process being supplied to the second cyclic process and the waste heat (QG) of the second cyclic process being supplied to the first cyclic process.
Patent TW-390948-B (TW)
Title: Two out of three voting solenoid arrangement
Inventor: ZACHARY BRYAN A
IPC: F15B20/00
Filed: 1999-01-20
Granted: 2000-05-21
Abstract: A voting solenoid arrangement 10 is provided which operates in a ""2 out of 3"" manner to provide relatively high safety, low spurious tripping and a relatively low installation cost, while also enabling on-line testing of each solenoid individually without process interruption. Solenoid arrangement 10 is preferably manifolded (not shown), to facilitate maintenance on any detected failure, and to simplify installation and replacement.
Patent TW-430895-B (TW)
Title: Method of manufacturing semiconductor integrated circuits or electronic packages for avoiding dishing in wide soft metal wires
Inventor: ENGLISH GEORGE
IPC: H01L23/48
Filed: 1999-02-12
Granted: 2001-04-21
Abstract: A method of manufacturing semiconductor circuits or electronic packages is provided. The step of splitting up wide metal areas into metal stripes is included into the physical design step of such devices. This method does not increase the data complexity significantly and guarantees correctness of the design. Furthermore, the method allows to solve the dishing problem that is inherent to copper wiring technologies.
Patent TW-419856-B (TW)
Title: Dielectric filter, transmission-reception sharing unit, and communication device
Inventor: HIRATSUKA TOSHIRO
IPC: H01P1/212
Filed: 1999-04-27
Granted: 2001-01-21
Abstract: A dielectric filter, a transmission-reception shared unit, and a communication device, which incorporate the filter, are disclosed; spurious modes among resonant modes of dielectric resonators formed on parts of a dielectric plate can be suppressed so as to improve attenuation characteristics. In the dielectric filter, an electrode having electrodeless parts is formed on both main surfaces of a dielectric plate so as to form dielectric resonators; and linear conductors as probes are formed on the upper surface of the dielectric plate, in which one of the linear conductors is coupled with the dielectric resonator so as to form a band elimination filter circuit and a low-band pass filter circuit is formed at a particular position on the other linear conductor. These band elimination filter circuit and low-band pass filter circuit allow signals of spurious modes to be cut off.
Patent TW-I225113-B (TW)
Title: Silicon single crystal wafer and method for producing silicon single crystal wafer
Inventor: TAMATSUKA MASARO
IPC: C30B15/00
Filed: 1999-05-19
Granted: 2004-12-11
Abstract: There is disclosed a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, wherein a size of grown-in defects in the silicon single crystal wafer is 70 nm or less, a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, the silicon single crystal ingot is grown with controlling a rate of cooling from 1150 to 1080 DEG C to be 2.3 DEG C/min or more, and a method for producing a silicon single crystal wafer wherein a silicon single crystal ingot is grown with doping nitrogen and controlling a rate of cooling from 1150 to 1080 DEG C to be 2.3 DEG C/min or more, and is then processed to provide a silicon single crystal wafer. The silicon single crystal wafer for device wherein growth of the crystal defects is suppressed can be produced by CZ method in high productivity.
Patent TW-436882-B (TW)
Title: Semiconductor device and method for manufacturing the same
Inventor: SASAKI KEIICHI
IPC: H01L23/48
Filed: 1999-05-28
Granted: 2001-05-28
Abstract: A paste used for a semiconductor device comprises a solid content containing conducting material and resin, and a solvent which can dissolve the aforementioned resin, wherein the solid-content has a ratio of 60% in volume.
Patent TW-452505-B (TW)
Title: Packaged product for the delivery of products, process of cleaning a carpet, a floor covering or another large surface, and packaged product kit for the delivery of products
Inventor: LAWSON JOHN RUSSELL
IPC: B05B15/06
Filed: 1999-06-09
Granted: 2001-09-01
Abstract: The present invention relates to a packaged product (1) comprising a package having a liquid reservoir (2) for containing a product, preferably a cleaning product, and a means for delivering the product (4) in a labour efficient way and in a uniform manner. This is achieved by a packaged product (1) in which the means (4) for delivering the product preferably comprises an electrically driven pump (5), and further comprises a spray arm (220), the spray arm (220) having at least one dispensing opening (225). The spray arm (220) being preferably either extended or extendible.
Patent TW-576862-B (TW)
Title: Hydrophilic adhesive masses
Inventor: IKEDA YASUO
IPC: A61K9/70
Filed: 1999-06-11
Granted: 2004-02-21
Abstract: A hydrophilic adhesive mass contains 0.05 to 10 wt.% of a copolymer of an aminoalkyl (meth)acrylate and an alkyl (meth)acrylate. This hydrophilic adhesive mass is excellent in adhesiveness, and especially when combined with a pharmacologically active ingredient, is suitable for use in providing hydrophilic plasters.
Patent TW-436986-B (TW)
Title: Embedded DRAM self-aligned contact with borderless contact and method for making the same
Inventor: CHEN DUNG-PO
IPC: H01L21/8242
Filed: 1999-06-14
Granted: 2001-05-28
Abstract: A method for making a semiconductor device comprises providing an embedded DRAM built on a substrate including a logic region and a memory region, the logic region is formed with a MOS transistor and each of both sides of the logic region has a shallow trench isolation, the memory region is formed with a MOS transistor and each of both sides of the memory region has a shallow trench isolation (STI); forming a silicide barrier layer on the memory region to prevent the formation of a silicide on the substrate in the memory region; forming a silicide on the substrate of the logic region, and depositing a silicon nitride layer as an etching stop of a borderless contact; using a photoresist layer to remove the etching stop layer of the borderless contact in the memory region; forming a first inter-polysilicon dielectric layer (IPDI) on the upper layer of the substrate, and defining a pattern and etching out a self-aligned bit-line contact on the self-aligned silicized layer in the memory region; forming a second inter-polysilicon dielectric layer (IPD2) on the upper layer of the substrate, and defining a pattern and etching out a self-aligned node contact on the first IPDI in the memory region; forming an inter-dielectric material layer (ILD) on the upper layer of the substrate, and forming a third contact, a fourth contact and a fifth contact in the logic region; forming a borderless contact in the third contact and the fifth contact, and forming a metal layer (M1) on the top of the contact of the substrate.
Patent TW-405103-B (TW)
Title: Strip screen
Inventor: YAN JEN
IPC: G07B15/00
Filed: 1999-10-12
Granted: 2000-09-11
Abstract: The present invention provides a strip screen which is to connect a plurality of strips having curved sections at the ends, and each of the strips form stitch-like opening at both ends of strips and configured with S-type external surface with opposite curved direction within the estimated sizes of strip thickness between the curved external raised surface and internal concave surface; and one extension of S-type external surface is connected with the plane jaw vertical to the slope of the strip external surface but the other extension of S-type external surface is connected with plane jaw parallel to the said plane jaw and comprising the hinge; the hinges of neighbored strips assemble and engage the concave and raised portion surrounding the S-type external surface; when each of the strips are expanded from the rolling state to a flat state, the raised surface and concave surface surrounded by the external surface will be locked and the plane jaw become the support of an leverage; on the upper side of the strip screen, covering the screen for free assembly and used as sun-blind roller screen; furthermore, fixing end strip at the bottom rail of the strip screen or the sun-blind roller screen and laying the screen in both vertical and horizontal directions.
Patent TW-451068-B (TW)
Title: Automotive battery condition monitor and monitoring method
Inventor: YEOH BOON WAN
IPC: G01R31/02
Filed: 1999-10-19
Granted: 2001-08-21
Abstract: The present invention discloses an automotive battery condition monitor and monitoring method mainly used to identify the functionally decaying automotive batteries by monitoring the changes in the voltage of sawtooth waveform signals generated after the start of the engine. The voltage of sawtooth waveform signals generated after the start of the engine is compared with the preset comparison voltage. If the voltage of sawtooth waveform signals exceeds the range of the preset comparison voltage, the functional condition of the automotive battery which has started decaying will be indicated by voice or light. Therefore, the present invention not only simplifies the traditional inspection procedures of automotive battery testing apparatus without affecting the normal function and service time of the automotive battery but also reduces the manufacturing cost of the apparatus.
Patent TW-507092-B (TW)
Title: Sidelight type face light source device and liquid crystal display device
Inventor: SHIOTANI TAKESHI
IPC: G02F1/13
Filed: 1999-11-05
Granted: 2002-10-21
Abstract: The present invention relates to a side light type surface light source device and a liquid crystal display device frame, wherein the frame 2 for forming an assembly is divided: first and second supporting frames 14 and 15; side frames 16a and 16b; liquid crystal display panel unit mounting members 17a and 17b; and an auxiliary frame 18. The liquid crystal display panel unit 17a and 17b are mounted to the side frames 16a and 16b in pairs. The bottom face 14a of the supporting frame 14 is mounted with a plate-shape spring member21. The back side 14b of the supporting frame 14 has a protruded protrusion part 20. A lower part 22a of a lid 22 is clamped between the protrusion part 20 and the back side 14b of the supporting frame 14. The assembling operation of the device is performed after forming the components. At first, screws (not shown) are used to fix one terminal side (first tongue part 23) of the side frame 16a and 16b at the first supporting frame 14. Besides, at the second supporting frame 15, screws are used to fix another terminal side (second tongue part 24) of the side frames 16a and 16b. Subsequently, the liquid crystal display panel unit mounting members 17a and 17b and auxiliary frame 18 are fixed at the side frames 16a and 16b.
Patent TW-444483-B (TW)
Title: System and method for simulated password between two hardware modules
Inventor: HOU JIANCI
IPC: H04L9/00
Filed: 1999-11-09
Granted: 2001-07-01
Abstract: It is a system and method for simulated password between the first hardware module to the second module. First, the password stored in the first hardware module is selected randomly a transition form from the original defined transition form sets to transfer the password into transited password. Second, the second hardware module can be guessed repeatedly a presumed password by choosing a possible transition form, and reverse the chosen transition form results in the transited password. Then, the presumed password is taken as an encrypted testing sample, and the encrypted testing sample is transmitted to the first hardware module. Finally, the first hardware module can confirm correction of the presumed password by checking encrypted testing sample. After proving that the presumed password is the same as the true password, the first hardware module will inform the first hardware module of the same comparison results and ends the process.
Patent TW-449809-B (TW)
Title: Method of forming semiconductor device by two-step process of metal silicide
Inventor: WU BING-CHANG
IPC: H01L21/28
Filed: 1999-12-13
Granted: 2001-08-11
Abstract: This invention provides a method of forming a semiconductor device by a two-step process of metal silicide, which consists of following steps: firstly, forming two shallow trench isolation areas in a semiconductor substrate; forming a gate oxide layer on the substrate; forming a polysilicon layer on top of the gate oxide layer; forming a barrier layer on top of the polysilicon layer; defining and etching part of the barrier layer, the polysilicon and the gate oxide layer to expose the underlying substrate; implanting the first ion into the substrate; forming a dielectric layer to cover the gate area and the substrate; then, etching back the dielectric layer to form a dielectric spacer on the side wall of the gate area; implanting the second ion into the substrate; forming the first metal silicide area in the source and drain area; forming a middle layer to cover the substrate and the gate area; then, etching back the middle layer and barrier layer; finally, forming a second metal silicide area in and on top of the polysilicon.
Patent TW-436865-B (TW)
Title: Manufacture method for increasing contact area of gate
Inventor: LI DUNG-SHING
IPC: H01L21/00
Filed: 1999-12-16
Granted: 2001-05-28
Abstract: A manufacture method for increasing contact area of gate is provided, in which a first sacrificial layer is conformally formed over a substrate and a gate structure. A second sacrificial layer is formed over the substrate, whose surface is lower than the top of a polysilicon layer by a thickness. The exposed part of the first sacrificial layer is removed. A conformal polysilicon layer is formed over the surface of the substrate. A spacer is formed on the sidewall of the gate structure. The exposed part of the polysilicon layer is removed by using the spacer as a mask to form a lateral polysilicon layer on each side of the gate for increasing contact area of the gate. The spacer, the second sacrificial layer and the first sacrificial layer are removed. A metal silicide process is further performed to form a metal silicide layer on the polysilicon layer at the top side and the lateral side of the gate structure to reduce the contact resistance of the gate.
Patent TW-511313-B (TW)
Title: AB5-type rare earth transition intermetallic compounds for the negative electrodes of rechargeable batteries
Inventor: PENG TZUNG-PING
IPC: H01M4/52
Filed: 2000-07-27
Granted: 2002-11-21
Abstract: Manganese-free rare earth-transition metal AB5-type hydrogen-absorbing alloys having favorable high rate discharge characteristics, suitable for use in rechargeable batteries for electrical vehicles or hybrid electrical vehicles, include compositions of the general formula: R(CouAlvMwNi1-u-v-w)z, where R is at least one element selected from rare earth elements and yttrium (Y), M is at least one refractory metal selected from groups IVB, VB, and VIB of the periodic table, the value of u is from 0 to about 0.25, v is from 0 to about 0.10, w is from 0 to about 0.05, and z, the ratio of R(CouAlvMwNi1-u-v-w)/R, is from about 4.70 to about 5.50. The unit cell volume is from about 87 to about 88.5 A3 at 25 DEG C, the plateau pressure is from about 3 to about 10 apsi at 25 DEG C, and the composition is essentially free of manganese.
Patent TW-434009-B (TW)
Title: Pressure controlled inflatable pad apparatus for supporting a body and method of supporting a person on a uniform pressure support surface
Inventor: BARBER DAVID GILLMAN
IPC: A61G7/00
Filed: 2000-02-10
Granted: 2001-05-16
Abstract: An inflatable seating pad 10 consists of a hand operated pump 12 integrated within the top surface to inflate the pad with air. The pad 10 has a shut-off connector 6 at one corner which locates and is connected to a pressure relief valve 8. In use, the pad 10 is inflated by pushing upon the hand operated pump 12 to over inflate the pad. The shut-off connector 6 maintains the pressure in the pad 10. To set the pressure to a desired pressure the user actuates the pressure relief valve (pre-set to optimum pressure) to operate the shut-off connector 6 to allow air to exhaust through the pressure relief valve.