baber/WOPTO huggingface dataset:
Patent JP-H0366168-A (JP)
Title: Field-effect type semiconductor device and its manufacture
Inventor: OMURA YASUHISA
IPC: H01L29/786
Filed: 1989-08-04
Abstract: PURPOSE:To largely suppress an injection amount, into a source junction, of majority carriers which cause a parasitic bipolar effect and to largely improve a breakdown strength between a drain and a source by a method wherein a high impurity- concentration layer whose conductivity type is the same as that of an active layer is formed so as to be adjacent to a drain junction and a drain voltage is applied to the layer. CONSTITUTION:A semiconductor metal compound layer 31 such as titanium silicide or the like is arranged on an n<+> type source region 16 and a p<+> type source region 17; a semiconductor metal compound layer 32 such as the titanium silicide or the like is arranged on an n<+> type drain region 18 and a p<+> type drain region 19; in addition, a semiconductor metal compound layer 33 is arranged in a gate electrode 15; the n<+> type source region 16 and the p<+> type source region 17 are connected mutually by using a source electrode 21 via the semiconductor metal compound layer 31. When the semiconductor metal compound layers 31, 32, 33 are formed respectively on the source and drain regions and on the gate electrode, a parasitic resistance of the source and drain can be reduced relatively. Consequently, a high-speed operation of a semiconductor device can be promoted.
Patent JP-S6446089-A (JP)
Title: Heat-insulating hose
Inventor: MIYANAGA SATORU
IPC: F16L53/00
Filed: 1987-08-12
Abstract: PURPOSE: To enable temperature control to be conducted very easily by arranging a self-temperature-control heater in the desired location in the hose for sending the coating used to coat the inner surface of conduit and the like. CONSTITUTION: A self-temperature-control heater 6 is additionally arranged in the desired location in a hose unit 10a. For example, a self-temperature- control heater 6 is arranged longitudinally or wound in a spiral form between the reinforcing braid 2 on the outer periphery of an inner tube 1 and an outer sheath 5. The self-temperature-control heater 6 can also be arranged longitudinally or wound in a spiral form under the reinforcing braid 2. As a result, it is possible to prevent local temperature rise, omit such devices as detector and thermocouple. It is also economic as the heater may be arranged when the hose is extruded.
Patent JP-S6093303-A (JP)
Title: Quartz-type thickness monitor
Inventor: OOSAKO SHINJI
IPC: G01B17/02
Filed: 1983-10-27
Abstract: PURPOSE:To make accurate film thickness measurement, precise film forming speed control, and precise film thickness control possible by arranging another quartz oscillator near a quartz oscillator for film thickness measurement and attaching a temperature measuring element while keeping sufficient thermal contact. CONSTITUTION:Another quartz oscillator 2' is arranged near a quartz oscillator 2 for film thickness measurement, and a temperature measuring element 20 is attached while keeping sufficient thermal contact, and the temperature is measured by a thermometer 21. Quartz oscillators 2 and 2' are placed in the same thermal environment, and the temperature indicates approximately accutately the temperature of the quartz oscillator 2. The quartz oscillator 2 is oscillated with a resonance frequency corresponding to the thickness of a deposited film and the temperature of the quartz plate, and this frequency is counted by a frequency counter 5 and is sent as a signal to a film thickness operator 6. The operator 6 uses the signal from the thermometer 21 and the coefficient of temperature of the quartz oscillator to calculate a variation of frequency to the temperature of the oscillator 2. The variation of temperature is eliminated from the output signal of the counter 5 to obtain the variation of frequency due to variation of film thickness, and it is displayed on a display device 7, thus measuring the film thickness accurately.
Patent JP-S6262556-A (JP)
Title: Manufacture of semiconductor device
Inventor: TAMAOKI YOICHI
IPC: H01L29/732
Filed: 1985-09-13
Abstract: PURPOSE:To reduce irregular characteristics by directly contacting an Si3N4 film with Si at the end of Si3N4/SiO2 film to prevent bird beaks from extending due to diffusion of oxygen through the SiO2 film of a lower mask layer at separate oxidation time. CONSTITUTION:An SiO2 film 6, an Si3N4 film 5, and an SiO2 film 4 of portions except an element forming region are etched, an Si epitaxial layer 3 is etched, thermally oxidized to form an SiO2 film 7 on the surface of a groove, and the film 7 remains on the side of the groove. Then, after the Si is lightly etched, an Si3N4 film 8 is coated, again etched to allow the film 8 to remain on the side of the groove. Here, the size of the portion 9 in which the film 8 is directly coated on the silicon is important, and the size is controlled by altering the slope of the groove and the etching amount in the light Si etching. Then, after an SiO2 film 10 is formed in the groove by thermal oxidation, the film 8 is removed, the thin film 7 of thin insolar portion is selectively removed, and a polycrystalline silicon film 11 is then formed.
Patent JP-H1049916-A (JP)
Title: Information recording medium and information memory device
Inventor: HIROTSUNE AKEMI
IPC: G11B7/2585
Filed: 1996-07-31
Abstract: PROBLEM TO BE SOLVED: To enable rewriting or super-high resolution reading out a large number of times than heretofore while maintaining good recording and reproducing characteristics or super-high resolution reading out characteristic. SOLUTION: A reflection layer is formed to a two-layered structure consisting of a layer 5 essentially consisting of So and a layer 65 essentially consent of a metallic material and Al oxide is used for at least part of the upper and lower dielectric layers of a recording film 3, by which the fluctuation in the reflection level, the increase or reproducing signal jitters, etc., are suppressed when many times of rewriting or super-high resolution reading out is executed. Many times of rewriting or super-high resolution reading out is thus made possible.
Patent JP-S6262590-A (JP)
Inventor: TAKAHASHI ISAO
IPC: H05K3/30
Filed: 1985-09-13
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-S6093733-A (JP)
Title: Production of electrode of picture display device
Inventor: OSADA KEIJI
IPC: H01J9/18
Filed: 1983-10-27
Abstract: PURPOSE:To enhance the adhesive strength, by silver-plating and then aluminum vapor depositing the surface of electrodes when an electron beam current control electrode or a horizontal defecting electrode are burnt for fixing through a binding spacer by means of adhesive frit. CONSTITUTION:A rear electrode 1, a wire electrode 2, a vertical focusing electrode 3, a vertical deflecting electrode 4, an electron beam current control electrode 5, a horizontal focusing electrode 6, a horizontal deflecting electrode 7, and an accelerating electrode 6, a horizontal deflecting electrode 7, and an accelerating electrode 8 are housed in glass containers 9, 22 in order to constitute a picture display device. In this case said electrodes 5 are burnt to fix each other, after the surfaces of electrodes 30, 31 made of 42-6 alloy are silver-plated to form 35, 35', and then are aluminum vapor deposited thereon, thereafter piled up one above another through a binding spacer 32 coated with insulating frits 36, 36' and adhesive frits 33, 33'. Consequently, the effect caused by exfoliation can be eliminated by increasing the adhesive strength to the adhesive frit and the picture quality can be stabilized by unifying the thickness thereof.
Patent JP-H0864533-A (JP)
Title: Method of forming crystalline semiconductor film
Inventor: BABA TOSHIAKI
IPC: H01L21/205
Filed: 1994-08-26
Abstract: PURPOSE: To form crystalline silicon semiconductor film in high quality on a substrate in a low temperature process by a method wherein silicon is epitaxially grown on the substrate by thermal decomposition of a silane-base gas while oscillating the crystalline substrate. CONSTITUTION: The surface of a crystalline substrate is cleaned up to remove an organic matter and metallic impurities. Next, after removing the oxides on the substrate surface using diluted hydrofluoric acid, etc., this substrate is mounted on a specimen base in a reaction chamber of a CVD device. At this time, the substrate can be oscillated both in the vertical and horizontal directions on this specimen base by the element such as PZT, etc. Accordingly, after pressure reducing the reaction chamber of the CVD device in high vacuum state, the substrate temperature is raised and the substrate is oscillated and dichlo ilane rosdiluted with hydrogen is led in so as to epitaxially grow a silicon film on the substrate. Through these procedures, a high quality epitaxially grown film diminishing defects can be formed.
Patent JP-H0868047-A (JP)
Title: Method for forming soil hardened body
Inventor: KUNITO MITSUHIRO
IPC: E02D3/12
Filed: 1994-08-26
Abstract: PURPOSE: To provide a method wherein, when a prepared hole is formed and excavated soil of the prepared hole is discharged to the surface of the ground, rotational torque of a screw auger can be made smaller and construction can be performed with a small device and a rotation shaft can be inserted into the prepared hole easily and surely in a following step. CONSTITUTION: In a method for forming a soil hardened body wherein earth and sand of an original ground is mixed with solidifying liquid to form the soil hardened body in the ground, a prepared hole 1 comprising an upper rotational kneading shaft guide hole portion 1a having a diameter nearly equal to the diameter of a soil hardened body to be formed and a lower small diameter hole portion 1b having a diameter smaller than the diameter of the soil hardened body is formed in the ground 2 by dry boring. Excavated soil produced by excavation of the prepared hole 1 is discharged to the surface of the ground and removed. And thereafter, a rotational kneading shaft is inserted into the hole 1a and advanced downward to excavate the original ground around the hole 1b and the excavated soil is mixed and agitated with the solidifying liquid.
Patent JP-H06188171-A (JP)
Title: Projection exposure system
Inventor: UMADATE TOSHIKAZU
IPC: G03F7/20
Filed: 1993-08-13
Abstract: PURPOSE:To decrease the average error of positioning by obtaining measurements from alignment shots in at least four shot areas, one each selected from every quadrant of a layout coordinate system on a wafer or substrate. CONSTITUTION:At least four shot areas are selected, one each from every quadrant of a layout coordinates system on a wafer or substrate, and alignment shots are carried out for measurement in the selected areas. When the areas on the wafer are subjected to a sequential alignment with respect to the center of exposure, the stage is moved according to the estimated distance from the measured area. The coordinates of some measured areas are calculated to determine error parameters A and O for Fn=A.Dn+O, where Fn is actual coordinates and Dn is designed coordinates. This improves productivity of semiconductor devices.
Patent JP-S58136377-A (JP)
Inventor: NORUBERUTO URUBAN
IPC: A63H19/24
Filed: 1982-11-17
Abstract: (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。
Patent JP-H0866833-A (JP)
Title: Posture detecting robot and detecting method for posture of article
Inventor: KOBA HIROSHI
IPC: B25J9/10
Filed: 1994-08-26
Abstract: PURPOSE: To easily detect the posture of a workpiece using a simple structure, for a production line in which a robot is made to abut on the workpiece and thus move synchronously with and following the workpiece. CONSTITUTION: A robot 3 is provided with a traveling part 14, a working part 17 and an abutting part 18 in an integral manner, and injects brake fluid using the working part 17 into a brake fluid tank mounted in a vehicle body W, while moving synchronous with and following the vehicle body W by making the abutting part 18 abut to the vehicle body. While the robot 3 moves synchronously with and following the vehicle body, the posture of the vehicle body W is detected on the basis of the state of abutting of an abutting arm 26 on the vehicle body W, and the working part 17 is controlled in accordance with the posture of the vehicle body W for enhancement of the working accuracy of the working part 17. Therefore, the need for providing an independent sensor for detecting the posture of the vehicle body W is eliminated, and the structure of the robot 3 is simplified.
Patent JP-H0486462-A (JP)
Title: Controller for absorption type freezer
Inventor: OGAWA ATSUSHI
IPC: F25B15/00
Filed: 1990-07-30
Abstract: PURPOSE:To improve a stability of the controlling by a method wherein a difference between a cold or a hot water outlet port temperature and its set value is integrated for a specified period of time in a control device for use in controlling by using a fuzzy inference in response to external conditions so as to constitute fuzzy rules and membership functions. CONSTITUTION:A control device 26 of a fuel control valve 17 retains information of degree of opening of a valve 23 and varies a degree of opening of the fuel control valve 17 in response to an operating amount from a fuzzy inference processor 27. A memory device 28 for control rules stores fuzzy rules run at the fuzzy inference processor 27, membership functions at a condition part and a conclusion part. In addition, a calculator device 30 takes temperature data at each of the parts and calculates a temperature variation rate or the like. At this time, a difference between a cold water outlet temperature and a target value is a mean value of last 40 samples. This calculated value is sent to a micro-computer 25 to check its adaptability at the condition part of all control rules and then the membership functions at the conclusion part are corrected. Valve control device 26 calculates a new information of degree of opening in reference to these calculated outputs so as to adjust the fuel control valve 17.
Patent JP-H0862639-A (JP)
Title: Liquid crystal device
Inventor: TANAKA TAKAAKI
IPC: G02F1/137
Filed: 1994-08-26
Abstract: PURPOSE: To provide a liquid crystal display device capable of dealing with high-fineness display of a large number of scanning line with a simple matrix system and a large screen by expanding an operation margin relating to a cell gap of a liquid crystal display having a metastable storage effect. CONSTITUTION: The liquid crystal display element having the two metastable states dependently upon applied voltage waveforms is obtd. by the constitution in which the pretilt angles of respective boundaries have a relation of reverse codes by making the angle formed by the rubbing directions applied to two sheets of the substrates 5 and the twist angle (ϕr) of liquid crystal molecules 1 in an initial state to nearly coincide. The liquid crystal display element described above is so formed as to satisfy the conditions 0.5<=K33 /K11 <=3.0, 0.5<=K22 /K11 <=0.8, K11 >=10×10<-12> N relating to the three elastic constants (the respective elastic constants K11 , K22 , K33 of spray deformation, twist deformation and bend deformation) of liquid crystals.
Patent JP-S6178675-A (JP)
Title: Printer
Inventor: SEKINE KAZUMI
IPC: B41J21/04
Filed: 1984-09-26
Abstract: PURPOSE:To enable a printing format such as tab setting to be easily set and enable to make compact the entire body of an apparatus, by a construction wherein an input means for inputting a pressed position as printing format information is provided in proximity to a printing part of a feeding passage for a recording paper. CONSTITUTION:A combined thermal head and printing format inputting keyboard HI is transparent, and is provided in front of a platen 2 over a width larger than the width of a pressure-sensitive paper 1, which is clamped between the combined head and keyboard HI and the platen 2. Patterns 3a, 3b of a thin film of a metallic compound such as indium oxide are formed on both sides of a base 3 formed of a transparent material. A thin film 4a of a metallic compound such as indium oxide is integrally provided on a flexible transparent plate 4. When an arbitrary position of the plate 4 is pressed by a finger or the like, the film 4a and the pattern 3b at the pressed position among the patterns 3b, ...3b are brought into contact with each other, whereby a tab set position can be key-inputted.
Patent JP-2000034522-A (JP)
Title: Billet heating furnace
Inventor: AKIYAMA SHUNICHI
IPC: C21D1/00
Filed: 1998-07-17
Abstract: PROBLEM TO BE SOLVED: To accumulate the sensible heat held in combustion exhaust gas and to improve the energy saving effect by disposing at least one set of a regenerative combustion burner provided with a heat-resistant ceramic-made regenerative body which alternately burns. SOLUTION: The regenerative combustion burners 2a, 2b which alternately burn as one pair along circumferential direction of the sidewall 1a in a rotary hearth type heating furnace, are arranged in several pairs at each combustion zone. Or the regenerative combustion burners 2a, 2b while alternately burning at the roof part 1b in this rotary hearth type heating furnace, are arranged at respective combustion zones so that the combustion direction is faced to the rotating direction of the rotary hearth. The regenerative burners 2a, 2b repeat the combustion and the exhaust of the combustion exhaust gas by working a fuel shut-off valve and a switch valve at each fixed time. The generated combustion exhaust gas is passed through a gas passage via the regenerative body of one side of the regenerative combustion burner and exhausted to the out of a system through the switch valve.  The ceramic-made regenerative body has the heat resistant temp. of >=800 deg.C, and the sensible heat held in the combustion exhaust gas can be utilized for preheating of the air for combustion.
Patent JP-S58103996-A (JP)
Title: C-shaped frame press
Inventor: MAEDA NOBUYOSHI
IPC: B21J13/14
Filed: 1981-12-17
Abstract: PURPOSE:To improve the working accuracy of press working and to decrease the rate of opening of a C-shaped frame by press fitting a slide between the crown part and bed part of the frame, and moving the slide upward and downward by the effect of an eccentric shaft and a toggle link mechanism. CONSTITUTION:A bolster 20 is fixed to the head part 11 of a C-shaped frame 10 of a press machine, and a frame 21 is provided vertically movably in the  position facing the bolster 20. A flywheel 25 is provided to a driving shaft 24,  and is interlocked to a spindle 29. An eccentric plate 32 is provided to the  spindle 29, and a connecting rod 33 faced upward of the slide 21 is moved back  and forth in a longitudinal direction by the rotation of the plate 32. At this  time, a toggle mechanism including an upper link 35 and a lower link 36 connected to the rod 33 moves, and the slide 21 moves upward or downward. By  such mechanism, the frame of the press is intensified and good workability is  maintained.
Patent JP-H1049465-A (JP)
Title: Method and system for sharing access to peripheral device
Inventor: OKADA YASUSHI
IPC: G06F13/14
Filed: 1996-07-31
Abstract: PROBLEM TO BE SOLVED: To eliminate the need for switching operation prior to the use of the peripheral device by making a peripheral device acquire a peripheral device access request only when the request is address to itself, and not acquire, but transfer the peripheral device access request and a peripheral device access result sequentially in logically one direction in other cases. SOLUTION: To each computer, a peripheral device access request for access to one peripheral device is sent out (S1) and arrival peripheral device access results (S2) is taken in (S3, S4) only when it corresponds to a peripheral device access request issued by its computer. In other cases, the peripheral device access request and peripheral access results which are not addressed to itself are sequentially transferred in logically one direction (S5). Consequently, the need for the switching operation prior to the use of the peripheral device can be eliminated and computers and peripheral devices which can be connected can be increased in number.
Patent JP-S6179156-A (JP)
Title: Needle type oxygen concentration detecting element
Inventor: URATA KUNIYOSHI
IPC: G01N33/20
Filed: 1984-09-26
Abstract: PURPOSE:To maintain high responsiveness and to prevent the decrease in measuring accuracy by coating and forming a refractory layer, except the top end, on the outside surface of a slid electrolyte formed by thermal spraying to the top end of a metallic wire so as to cover fully a standard electrode to be formed to the top end of said wire. CONSTITUTION:Thoroughly stabilized zirconia or the like is formed by thermal spraying to the tip end of the metallic wire 1 in common use as an electrode to provide the solid electrolyte 3 so as to cover fully the standard electrode 2 formed by thermal spraying of a metal-metallic oxide to the top end of said wire. The top end of the electrolyte 3 is then exposed and refractories such as Al2O3 are thermally sprayed on the electroyte so as to form the tapered part having the thickness decreasing gradually toward the exposed part, by which the refractory layer 4 is formed. Such element is embedded into refractory cement 5 at the top end of the probe. The responsiveness is thus assured and the possibility for crazing, etc. is eliminated. The decrease in the measuring accuracy owing to the gas generated from the top end of the probe is prevented.
Patent JP-S6095012-A (JP)
Title: Wave dissipation wall
Inventor: SUZUKI MASASHI
IPC: E02B3/06
Filed: 1983-10-31
Abstract: PURPOSE:To construct a wave dissipation wall regardless of the driving precision of a foundation pile, by a method wherein a steel pipe, secured to a wave dissipation member and sized to be larger than that of the foundation pile, is inserted into a foundation pile, and after the position of the wave dissipation member is adjusted, a gap between the steel pipe and the foundation pile is filled with a filling material. CONSTITUTION:Construction of a wave dissipation wall is such that foundation piles 3 are firstly driven into a sea bottom ground 5, and steel pipes 2 formed integrally with a wave dissipation member 1 are respectively inserted into the foundation piles 3. Since the steel pipe 2 has size larger than that of the foundation pile 3 and a clearance size therebetween is wide, the wave dissipation member 1 can be highly precisely installed to a reference line such as normal without being widely influenced by the position precision of the foundation pile 3 driven into the sea bottom ground 5. After the reference line is adjusted, a gap 4 between the foundation pile 3 and the steel pipe 2 is filled with concrete to secure together the foundation pile 3 and the wave dissipation member 1.
Patent JP-H11195644-A (JP)
Title: Manufacturing equipment and method of semiconductor device
Inventor: IMAI SHINICHI
IPC: H05H1/46
Filed: 1998-07-17
Abstract: PROBLEM TO BE SOLVED: To prevent an etching operation from stopping suddenly in a process in which a deep hole is formed by etching. SOLUTION: A reaction chamber is composed of a lower frame 1a, a quartz dome 2A, an upper electrode 7, an O-ring, and others. A lower electrode 10 and a substrate 9 as a work on the lower electrode 10 are installed inside the reaction chamber. The quartz dome 2A is so controlled as to be kept at a temperature of 180 deg.C or above by a heater 6. Fluorocarbon gas such as CH26 gas, C2 F8 gas or the like is introduced into the reaction chamber through a gas inlet 8, an electric power of high-frequency is applied to an antenna coil 3 from a first higher harmonic power supply 5 to generate plasma 17, and a substrate 9 is subjected to plasma etching.  The quartz dome 2A is kept at a high temperature by heating, whereby deposits which prevent hydrogen from being discharged from the side wall of the chamber are prevented from being formed, and deposits formed on the base of a hole to stop etching is removed with hydrogen.