Patent GB-961924-A (GB)
Title: Transistor switching circuits
IPC: H03K19/084
Filed: 1963-05-15
Abstract: 961,924. Transistor switching circuits; controlled non-linear capacitors. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 15, 1963 [May 21, 1962], No. 19191/63. Headings H3B and H3T. In a transistor switching circuit a semi-conductor diode is connected between the collector and base of a transistor connected in a common emitter circuit, the arrangement being such that when the transistor is switched to a state of conduction at or near saturation, the diode is non- conducting and is biased into the high capacitance region of its bias/capacitance characteristic and when the transistor is switched to a state of conduction at or near cut-off, the diode is non-conducting and is biased to the low capacitance region of its bias/capacitance characteristic. The invention is applied to a diode logic circuit 10 terminating in a transistor switch 11 comprising transistor 50 having selenium diode 52 connected between its collector and base electrodes and forming a feedback path to provide optimum noise rejection. Circuit 10 has three levels of logic 12, 13, 14 comprising diodes 15-17, 25-27 and 35-37 respectively, circuits 12, 14 functioning as OR gates and circuit 13 as an AND gate. When there is a negative input at either terminals 41, 42 or coincident negative inputs to terminals 30, 31 and one of the terminals 18, 19, 20 transistor 50 is switched-on. The voltage across selenium diode 52 is then practically zero since the collector of transistor 50 is at ground potential and the point 38 is clamped by way of the base-emitter junction to approximately - 0.3 volts, and so although the diode 52 is forward biased it is maintained in its high resistance region of its characteristic. When the negative inputs are removed and transistor 50 is cut-off diode 52 is reverse biased. The bias/ capacitance characteristic of the diode, Fig. 1a is such that when the transistor 50 is cut-off the capacity of the diode is relatively low and when the transistor is saturated the capacity is several times greater. Thus the amount of feedback between the collector and base of the transistor depends upon whether the transistor is in a cut-off or saturated condition. Figs. 2, 3 (not shown), show that when a positive going signal is applied to terminal 41, in the absence of diode 52, a high positive spike is applied to terminal 38 by way of the capacitances of diodes 36, 39, 40 which turns off the transistor even though the desired logic function is still satisfied, and this positive going noise signal is recognized as a data signal at terminal 53. Figs. 4, 5 (not shown), illustrate the effect of a negative going pulse applied to terminal 30 in the absence of diode 52 when the transistor is cut-off and a small negative potential is applied to terminal 21. The error signal is substantially shorter in time duration than that of Figs. 2, 3 so that the feedback requirement is less. Figs. 6, 7 (not shown), illustrate the error pulse in the event that a positive going pulse is applied to input terminal 19 whilst the transistor is on and whilst a negative potential is applied to 18.