baber/WOPTO huggingface dataset:
Patent TW-448580-B (TW)
Title: Collector-up RF power transistor
Inventor: JOHANSSON TED
IPC: H01L29/417
Filed: 1999-06-11
Granted: 2001-08-01
Abstract: A method for manufacturing a low voltage high frequency silicon power transistor applying epitaxial mesa structure using a minimized number of masks is disclosed. Also a low voltage high frequency silicon transistor chip (20) presenting an epitaxial mesa technology silicon power device is presented. The silicon transistor layout presents a collector-up device with a number of single mesa collector structures (21). The transistor operates with its substrate as a down facing emitter, and base and collector areas together with bonding pads (23, 25) facing up, whereby the parasitic base-to-collector capacitance being almost entirely eliminated with the emitter as substrate. The reduced number of necessary fabrication process steps of this new structure is outlined.
Patent TW-463122-B (TW)
Title: Method for rapidly detecting the occurrence of short-circuit in keyboard array
Inventor: JANG YOU-CHIUAN
IPC: H03M11/02
Filed: 1999-06-15
Granted: 2001-11-11
Abstract: The present invention relates to a method for rapidly detecting the occurrence of short-circuit in a keyboard array, through which a user only needs to press down 25 push buttons instead of all push buttons in order to detect the occurrence of a short circuit between a row modem line and another row modem line or between a column modem line and another column modem line, for all the push buttons. Herein, the method comprises: setting up a keyboard array corresponding to the push buttons of a keyboard, the keyboard matrix comprising row modem lines and column modem lines in a matrix form; setting up a keyboard scanning code data base in the memory device of a computer corresponding to the keyboard matrix. When a user presses down a push button, one row modem line comes into contact with a row modem line, and the keyboard controller will read in a signal change generated by this pressing down operation, and generates a scanning code corresponding to the push button of the keyboard. This scanning code is fed to a mainframe device, and triggers a hardware interrupt IRQ1 in the mainframe. Thus, a self-set interruption service procedure will replace a conventional INT9H interruption procedure. Then, the scanning code is directly fed to the buffer region of the mainframe. By executing a comparison program in the memory device, the mainframe performs a comparison operation by comparing the scanning code in the buffer region with the keyboard scanning code database in the memory device. The comparison result is used to locate a location in the keyboard matrix corresponding to the scanning code, thereby knowing which push button in the keyboard was pressed down. When a user is performing a keyboard short-circuit test, 25 push buttons are sequentially pressed down according to the instruction. When a push button is pressed down, upon the occurrence of a short circuit of the push button of the keyboard, a text message is shown in the screen indicating the occurrence of a short circuit of the keyboard, and indicating the number of the row/column modem line where a short circuit has occurred. Since a user only needs to press down 25 push buttons and does not need to press down all push buttons of the keyboard before knowing the occurrence of a short circuit, the test of a keyboard can be performed rapidly.
Patent TW-449522-B (TW)
Title: Welding method for metal joint surfaces
Inventor: TUNG JAU-NIAN
IPC: B23K33/00
Filed: 1999-06-22
Granted: 2001-08-11
Abstract: This invention provides a welding method for metal joint surfaces. At least one of the two metal surfaces is painted with powders that can lower the eutectic temperature of these two metals. Once the workpiece is sintered in the vacuum furnace, the sintering temperature is controlled higher than the eutectic temperature of the powder and these two metals, but lower than the melting temperatures of these two metals. As a result, the joint surfaces of two metals melt and are welded together.
Patent TW-419780-B (TW)
Title: Self-aligned dual damascene process
Inventor: LIU JEN-CHENG
IPC: H01L21/76
Filed: 1999-06-24
Granted: 2001-01-21
Abstract: A self-aligned dual damascene process comprises the steps: a substrate; form a doped silica glass layer and a nitride layer on the substrate; define the nitride layer by microlithography process and etching technology, and form the first opening to expose the doped silica glass layer on the preset position of the self-alignment dual damascene process; form a low resistance spin-coated layer of organic material, cover the nitride layer and the surface of the doped silica glass layer exposed from the first opening; form a photoresist layer on the low resistance spin-coated layer of organic material by microlithography process, and form the second opening of which the width is large than the first opening and the doped silica glass layer is exposed on the preset position of the self-aligned dual damascene; and apply a two-stage etching, remove the low resistance spin-coated organic material layer under the second opening in the first etching step and remove the doped silica glass layer under the first opening in the second etching step.
Patent TW-554339-B (TW)
Title: Optical information recording medium
Inventor: WU CHIH-YUAN
IPC: G11B3/70
Filed: 1999-07-16
Granted: 2003-09-21
Abstract: The present invention relates to a recording material used to form a recording layer of an rewritable optical disk of phase-change type, which the recording material has higher transfer rate and stability between the amorphous and crystalline states. The recording material includes a quinary alloy of Ge-Te-Sb-Se-Cu. The Ge-Te-Sb-Se-Cu alloy of the present invention is made by doping little Se and Cu into the Ge4SbTe5 alloy. A rewritable optical disk with the recording material of the present invention has higher bitrate and more stable physical properties. That consequently enhances the performance against repeated recording and erasing.
Patent TW-426506-B (TW)
Title: Belt conveyor type compression forming apparatus for tobacco stream
Inventor: OKUMOTO YUTAKA
IPC: A24C5/18
Filed: 1999-07-30
Granted: 2001-03-21
Abstract: A belt conveyor type compression forming apparatus for tobacco stream, comprising a compression belt formed integrally with a tobacco belt for a tobacco stream, wherein the compression belt extends from tobacco belt to a packing section of a cigarette manufacturing machine. The compression belt cooperates with a forming groove of a forming belt guiding rolling papers, and defines a compression-forming tunnel for the tobacco stream. The compression belt is processed at a speed same as the processing speed of the tobacco belt, and provides a movable ceiling wall in the compression-forming tunnel.
Patent TW-430928-B (TW)
Title: Single-chip device isolation by buried conductive wall
Inventor: LIAU JUNG-BIN
IPC: H01L21/76
Filed: 1999-07-28
Granted: 2001-04-21
Abstract: The present invention utilizes the formation of a N type moat, which passes through a silicon wafer to reach a desired depth, including the thickness of the silicon wafer, to achieve an isolation in the integrated circuit from the upper surface to the lower surface of a silicon wafer. The process to form the moat is based on a transmutation doping reaction for transforming the naturally existed isotope in silicon to phosphorous. Several methods can be used to generate the above transmutation doping, such as the collision of the neutron, the proton, and the atomic nucleus of deuterium. With a proper mask, the collision effect is restricted on a specific area, thereby forming the above moat. In the present invention, four preferred embodiments and the respective manufacturing procedures are described.
Patent TW-535233-B (TW)
Title: Self-aligned ion implantation method
Inventor: DING MAU-YI
IPC: H01L21/3065
Filed: 1999-08-04
Granted: 2003-06-01
Abstract: A self-aligned ion implantation method is disclosed, which is provided to add an oxygen plasma processing procedure in the etching step of the self-aligned ion implantation process. The oxygen plasma processing procedure is proceeded after the plasma etch processing procedure in the etching step is completed, which is to vent with a certain flux of oxygen in a specific time, under a specific working pressure and voltage, so as to reduce the generation of defects.
Patent TW-519603-B (TW)
Title: Data transmission circuit and method of low power dissipation, and liquid crystal display using the method
Inventor: NITTA HIROYUKI
IPC: H04L25/02
Filed: 1999-10-01
Granted: 2003-02-01
Abstract: Display data of, for example, 24 bits are transmitted to a receiver circuit from a transceiver circuit through transmission lines and are displayed on a liquid crystal panel. The transceiver circuit has a holding circuit made of, for example, an eight-stage shift register. If data, which are different from the data held in the holding circuit, are transmitted from the transmission lines, 24 bit data are outputted to the transmission lines by using first and second output circuits. If data, which are the same as the data held in the holding circuit, are transmitted from the transmission lines, the data, which indicate the holding place in the holding circuit, are outputted from the second output circuit. When the data indicating the holding place are transmitted to a first holding circuit, the transceiver circuit decodes the transmitted data by using the data held in the holding circuit to 24-bit display data.
Patent TW-479009-B (TW)
Title: Electromagnetic shield plate and the manufacturing method thereof
Inventor: UEDA KAYOKO
IPC: H05K9/00
Filed: 1999-10-27
Granted: 2002-03-11
Abstract: The present invention is an electromagnetic-shielding plate, whose characterization is that it has a conductive geometrical pattern on a transparent board, where the pattern is formed of lines which are 10 to 80 μm in width, and have a space of 50 to 250 meshes between them. This electromagnetic-shielding plate provides is easily manufactured, even if it is large in size and is superior in electromagnetic shielding properties and visibility.
Patent TW-439233-B (TW)
Title: BiCMOS device using the epitaxial layer and double-well region and the manufacturing method
Inventor: JANG GUAN-LUEN
IPC: H01L21/8249
Filed: 1999-12-08
Granted: 2001-06-07
Abstract: A BiCMOS device using the epitaxial layer and double-well region and the manufacturing method for forming it on the semiconductor substrate. The semiconductor substrate has a defined bipolar device area and the CMOS device area (NMOS device area and PMOS device area). The present invention is characterized for forming the epitaxial layer on the entire surface of the semiconductor substrate such that the epitaxial layer of the Bipolar device area can directly form the bipolar device and a double-well region ( P-well and N-well) can be formed on the surface of the epitaxial layer of CMOS device area (NMOS device area and PMOS device area) to form the NMOS device and the PMOS device.
Patent TW-454123-B (TW)
Title: Method and system for enabling pervasive computing devices to communicate with each other
Inventor: BERSTIS VIKTORS
IPC: H04L29/08
Filed: 1999-12-23
Granted: 2001-09-11
Abstract: A method for communicating given data between a first computing device and a second computing device. The method begins with the first computing device generating a request for the given data and transmitting the request to the second computing device. The first computing device requests the data because it does not have the capability of generating the data itself or, if it does, the data is not then available to the device. The request for the given data is received at the second computing device, which, if the data is available therefrom, generates a message including the given data. The second computing device then transmits the message back to the requesting device. At the first pervasive device, the given data is extracted and stored with a given file. In one illustrative embodiment, the given data is global position data, the first computing device is a digital camera, and the second computing device is an in-vehicle computer having a global positioning system.
Patent TW-456101-B (TW)
Title: Treatment method and apparatus for power source disturbance caused by electromagnetic interference
Inventor: KANG TZUNG-HUNG
IPC: H03K19/00
Filed: 2000-01-20
Granted: 2001-09-21
Abstract: A kind of treatment apparatus for power source disturbance caused by the electromagnetic interference can be used in a power-on reset circuit of an electronic system, in which the treatment apparatus includes a logic circuit and a judgment circuit. The initial logic value of the status signal output by a logic circuit is the first logic value, and the first logic value is changed to the second logic value when the logic value of the input control signal is changed. After that, the logic value stays firmly at the second logic value without being affected by the control signal. The judgment circuit is used to judge the first time of power-on reset action and directly deliver the reset signal when a reset signal is received and the status signal is at the second logic value. Through the change of logic value for the control signal, the status signal is changed to the second logic value. When the reset signal is received and the status signal is at the second logic value, an error action caused by electromagnetic interference is judged and the delivery of reset signal is ceased. At the same time, a repair procedure can also be switched on to repair the effects of system caused by electromagnetic interference.
Patent TW-425456-B (TW)
Title: Slider for moving window glass up and down
Inventor: NEMOTO TAKEHIKO
IPC: E05F11/44
Filed: 2000-01-28
Granted: 2001-03-11
Abstract: This invention is of a slider for moving window glass up and down without making unpleasing sound, shaking, and unstable motions. This window glass will make a sliding body smoothly fit into the guiding groove ""e"", and there will be sliding devices, placed at four corners of the sliding body, slide in the groove ""e"" with its surface contact with inner side of the groove.
Patent TW-455521-B (TW)
Title: Abrasive wire for a wire saw and a method of manufacturing the abrasive wire
Inventor: SHIMAZAKI YUTAKA
IPC: B24D18/00
Filed: 2000-02-01
Granted: 2001-09-21
Abstract: An abrasive wire provides an efficient cutting operation with high accuracy and a longer service life. Abrasive grains are provided around a core wire. The abrasive grains are bonded to the core wire by a light curing resin or an electron beam curing resin which can be cured within a few seconds. Accordingly, the curing operation can be performed while the core wire is moved in the direction of the longitudinal axis of the core wire. Thus, a long abrasive wire can be fabricated at reduced time and cost.
Patent TW-478307-B (TW)
Title: Manufacturing method of heat dissipating device and its structure
Inventor: LI TZUNG-LUNG
IPC: G06F1/20
Filed: 2000-02-03
Granted: 2002-03-01
Abstract: The present invention provides a manufacturing method of heat dissipating device and its structure. A heat conductive substrate is placed on a carrying board of a machine. A layer of powder combining agent with the same material as the heat conductive substrate is laid on one side surface of the heat conductive substrate. A positioning tool is assembled corresponding to the two opposite sides of the heat conductive substrate. The positioning tool has a plurality of positioning slots corresponding to each other and sequentially arranged by space. Heat dissipation fins are sequentially assembled in the positioning slots. One side of the heat dissipation fin contacts with the heat dissipation substrate, so as to transfer the carrying board into a furnace for sintering to melt and activate the combining agent, thereby making the heat dissipation fins capable of adhering to the heat conductive substrate. Finally, the carrying board is pushed out of the furnace to make the combining agent cool and condense, thereby securely and tightly adhering the heat conductive substrate and the heat dissipation fins. With the combining agent having the same material as the heat conductive substrate and the heat dissipation fins, the heat dissipation device formed by adhesion has a better heat dissipation effect.
Patent TW-512186-B (TW)
Title: Process for promoting adhesion between an inorganic substrate and an organic polymer
Inventor: TOMAIUOLO FRANCESCO
IPC: H05K3/46
Filed: 2000-02-11
Granted: 2002-12-01
Abstract: The invention relates to a process, and compositions for its implementation, to promote adhesion between an inorganic substrate and an organic polymer, especially between the copper surfaces of printed circuits for electronic use and a polymer resin, in which an organometallic layer of a dark brown colour, which is very uniform and compact, is deposited on the inorganic substrate by means of treatment in a composition which comprises: (a) a silane or a mixture of functional organic silanes with a structure represented by the following general formula: Y-(GH2)n-Si(OR)3 where: Y represents a functional organic group, n is a number which has a value between 0 and 3, and R represents a hydrogen atom or any easily hydrolysable group which is capable of releasing an atom of hydrogen (b) an azole compound; (c) an oxygen carrier; (d) an organic or inorganic acid; and preferably (e) a zinc compound. The process and the composition according to the invention ensure a considerable increase in adhesion between the inorganic substrate and the organic polymer.
Patent TW-559912-B (TW)
Title: Method of forming gate with metal silicide
Inventor: SHIU SHIN-HUEI
IPC: H01L21/28
Filed: 2000-05-15
Granted: 2003-11-01
Abstract: A method of forming gate with metal silicide is provided, which comprises the following steps: providing a semiconductor substrate; forming a first dielectric layer on the substrate; forming a polysilicon layer on the first dielectric layer; forming a metal silicide layer on the polysilicon layer; forming a second dielectric layer on the metal silicide layer; etching the second dielectric layer, the polysilicon layer and the first dielectric layer sequentially to from the gate using an etching method; forming a metal nitride layer on the side wall of the metal silicide layer by a thermal nitridation process; and using a thermal oxidation process to eliminate the edge defect effect on the side wall of the first dielectric layer.
Patent TW-521079-B (TW)
Title: Process for the continuous preparation of thermoplastically processable polyurethanes with improved softening properties
Inventor: BRAUER WOLFGANG
IPC: C08G18/08
Filed: 2000-05-19
Granted: 2003-02-21
Abstract: Process for the continuous preparation of thermoplastically processable polyurethane elastomers with improved softening properties is disclosed. The process is carried out in a tubular reactor at a ratio of the circumferential speed of the stirrer (in m/sec) in the tubular reactor and the throughput (in g/sec) of > 0.03 m/g.
Patent TW-451409-B (TW)
Title: Method for forming borderless contact window with wide process edge
Inventor: JUANG SHU-YA
IPC: H01L21/768
Filed: 2000-05-29
Granted: 2001-08-21
Abstract: This invention is about the method for forming borderless contact window with wide process margin and comprises the following steps. At first, a semiconductor substrate is provided, in which the first oxide layer is formed on the semiconductor substrate and the first silicon nitride layer is formed on the first oxide layer surface. Through the use of the first photoresist layer, part of the first nitride layer, part of the first oxide layer and part of the semiconductor substrate are etched. A line oxide layer is deposited and the second nitride layer is formed. The second oxide layer is filled in. Planarize the second oxide layer. The second nitride layer and the first nitride layer are removed. Ions are implanted into the top surface of the active region. A polysilicon layer is defined. Ions are implanted into the top surface of the oxide-layer. Oxide spacers are formed and are adjacent to the sidewalls of gate. The formation and the coverage of a metal silicide are performed. The oxide spacers are removed. The second oxide layer is uniformly etched back so as to obtain a special thickness. An inner dielectric oxide layer is deposited and is planarized. A nitride spacer is then formed. The device region and the trench region are adjusted in order to form a borderless contact window.
Patent TW-450884-B (TW)
Title: Improved injection molding method and apparatus having improved detachable clamping unit with horizontal booking dies
Inventor: ASH CHARLES E
IPC: B29C45/04
Filed: 2000-07-07
Granted: 2001-08-21
Abstract: A molding method and apparatus is shown which utilizes a plasticizing or injection unit in combination with a horizontal booking press having a first or moveable mold platen carrying a first portion of a mold or molds, and a second, or fixable, door platen carrying a second portion of a mold or molds. The door platen swings open and closed on a hinge, and is fixable in its closed position. When the moveable mold platen is in its' closed position adjacent the fixed position of the door platen, a mold cavity is formed by the first and second portions of the mold or molds, and material is injected into the mold cavity.
Patent TW-498576-B (TW)
Title: Locking clip for a card edge connector
Inventor: BOWERS MICHAEL DEAN
IPC: H01R12/72
Filed: 2000-08-04
Granted: 2002-08-11
Abstract: A retention member (40) for a card edge connector (4) is provided for securing a printed circuit card (6) in the connector. The retention member is formed as a spring clip having free ends (42) secured to releasably attached to ends of the electrical connector. Tabs (44) are received in notches (32) to further secure the assembly. Slots (48) are formed in the spring clip to receive corners of the printed circuit card. The spring clip may have bowed portions to further strengthen the retention of the printed circuit card.
Patent TW-503603-B (TW)
Title: One way locking mechanism for card connector
Inventor: NICOLAS CHRISTOPHE
IPC: G06K7/00
Filed: 2000-11-15
Granted: 2002-09-21
Abstract: A decoder (1) provided with a mechanical connector (1) to receive a smart card (2, 19). Said connector is equipped with means to render the chip (9) of said card inoperative in the case of an attempt to recover the card (2). According to an embodiment, the smart card is blocked in the connector by means of a glue, preferably a hotmelt glue tablet, the heating of which is activated by the insertion of the card.
Patent TW-I223818-B (TW)
Title: Flat cable and modular rotary anvil to make same
Inventor: SCHILSON TOM
IPC: H01B7/08
Filed: 2001-02-13
Granted: 2004-11-11
Abstract: A flat electrical cable and a modular rotary anvil for assembling a flat electrical cable is provided wherein the flat cable includes an upper layer having ribs protruding along its length and substantially parallel to one another, continuous substantially parallel and adjacent seams fanned between and upper an lower insulator layer conductors between the upper and lower layer adjacent the seams and a pattern formed in the surface of the lower insulator layer. The present invention may have upper and lower polyester layers having copper conductors therebetween and the seams ultrasonically welded in order to provide flat electrical cable for various applications such as incorporation in an automobile clockspring. The modular rotary anvil includes multiple removable and interchangeable segments or inserts which provide the ability to impart a smooth or knurled textured surface pattern to the work-piece. Other inserts include cutting inserts which provide for a seam on the work-piece while at the same time cuts the work-piece along a seam.