baber/WOPTO huggingface dataset:
Patent TW-406404-B (TW)
Title: Manufacture method of the integrated circuit capacitor
Inventor: TZENG HUNG-HUEI
IPC: H01L27/108
Filed: 1998-10-23
Granted: 2000-09-21
Abstract: This invention comprises the steps of: forming the first electric-conductive layer on a substrate; forming a photoresist pattern on the first electric-conductive layer; forming silicon photoresist subsequently on the surface of the photoresist pattern; etching the first electric-conductive layer by utilizing the silicon photoresist as the etching mask; removing the silicon photoresist sited on the surface of the photoresist pattern; removing the photoresist pattern and performing etching process to etch the above-mentioned first electric-conductive layer; removing the silicon photoresist to form the crown-type structure, and next to form the dielectrics on the surface of the crown-type structure; and forming the second electric-conductive layer on the dielectrics.
Patent TW-418173-B (TW)
Title: Method and apparatus for capping container cans for food products and drinks
Inventor: GROPPI SILVANO
IPC: B65B17/02
Filed: 1998-10-27
Granted: 2001-01-11
Abstract: A film (91) of thermoformable plastic material is heated and positioned on the upper part of a group of cans (4); the film is made to adhere to the surface of said upper part of the group of cans by a thrust action, acting on the top of the film, exerted by a deformable elastic pad (823) in the regions surrounded by the can clinching rim, and by compresses air in the regions external to the can clinching rim, to urge the film downwards; that film portion adhering to the upper part of the group of cans (4) is separated from the rest of the film; the film is previously heated to an appropriate temperature to the surface of said upper part.
Patent TW-417390-B (TW)
Title: Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications
Inventor: MERRILL RICHARD B
IPC: H04N5/353
Filed: 1998-11-13
Granted: 2001-01-01
Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the second terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch. A light shield is disposed over portions of the semiconductor substrate comprising a circuit node including the second terminal of the semiconductor transfer switch, the second terminal of the capacitive storage element and the input of the semiconductor amplifier and to prevent substantially all photons from entering the circuit node. A plurality of storage pixel sensors are disposed in an array.
Patent TW-434148-B (TW)
Title: Method and apparatus for processing a discontinuous coating on a substrate
Inventor: BARNHOLTZ STEVEN LEE
IPC: D21H19/74
Filed: 1998-11-17
Granted: 2001-05-16
Abstract: The present invention comprises an apparatus for making a selectively-coated web. The apparatus comprises a coating means for applying a coating to a web in a plurality of coated regions, the coated regions being in spaced, parallel relationship to a plurality of uncoated regions. The present invention further comprises support means for supporting the web after coating, the support means comprising a plurality of support members, each of the support members being in registry with an uncoated region. In a preferred embodiment the coating of a beneficial emulsion is applied in selected regions by extrusion. A method of forming a coated web without producing buildup of coating material on idler rollers is also disclosed. The method comprises the steps of: (a) coating a web in a plurality of coated regions, the coated regions being in parallel spaced apart relationship to uncoated regions; (b) providing support members, each of the support members being aligned in registry with an uncoated region; and (c) guiding the coated web in contact with the support members such that each support member is in registry with an uncoated region of said web.
Patent TW-581763-B (TW)
Title: Combination and pharmaceutical composition comprising FPT inhibitor for treating proliferative diseases
Inventor: BISHOP WALTER R
IPC: A61K41/00
Filed: 1998-12-21
Granted: 2004-04-01
Abstract: Combinations and pharmaceutical compositions are provided for treating proliferative diseases, especially cancers, comprising (1) a farnesyl protein transferase inhibitor in conjunction with (2) an antineoplastic agent and/or radiation therapy.
Patent TW-416159-B (TW)
Title: Nonaqueous-electrolyte secondary battery
Inventor: YAMAGUCHI AKIRA
IPC: H01M10/0525
Filed: 1999-03-04
Granted: 2000-12-21
Abstract: A nonaqueous-electrolyte secondary battery including a coil electrode formed by laminating an elongated positive electrode having a positive-electrode-mix layer formed on at least either of main surfaces of a positive-electrode collector and an elongated negative electrode having a negative-electrode-mix layer formed on at least either main surfaces of a negative-electrode collector and by winding a laminate such that the positive electrode is positioned at the outermost position, wherein the positive-electrode-mix layer is formed on only either of main surfaces of the collector at the position adjacent to the outermost end of the positive electrode and/or the position adjacent to the innermost end of the positive electrode, the positive-electrode-mix layer is not formed on the positive-electrode collector at the outermost end of the positive electrode and only the positive-electrode collector is formed. The negative-electrode-mix layer is not formed on the negative-electrode collector at the outermost end of the negative electrode and only the negative-electrode collector is formed, and the outermost end of the negative-electrode collector positioned at the outermost end of the negative electrode is, in the direction from the inner portion of the coil electrode toward the outer portion, positioned more forwards than the outermost end of the positive-electrode collector.
Patent TW-510897-B (TW)
Title: New substituted indolinones useful in treating excessive or abnormal cell proliferation, the preparation thereof and their use as pharmaceutical compositions
Inventor: HECKE ARMIN L
IPC: C07D413/12
Filed: 1999-04-14
Granted: 2002-11-21
Abstract: The present invention relates to substituted indolinones of general formula wherein R1 to R5 and X are defined as in claim 1, the isomers thereof and the salts thereof, particularly the physiologically acceptable salts thereof which have valuable pharmacological properties, particularly an inhibitory effect on various kinases and cycline/CDK complexes and on the proliferation of various tumour cells, pharmaceutical compositions containing these compounds, their use and processes for preparing them.
Patent TW-409276-B (TW)
Title: Method of manufacturing semiconductor device
Inventor: KODAMA SHUICHI
IPC: H01L21/3065
Filed: 1999-04-16
Granted: 2000-10-21
Abstract: In a method of manufacturing a semiconductor device, a passivation film is formed on a metal wiring layer on a semiconductor substrate. A first opening is formed in a predetermined region of the passivation film to reach a surface of the metal wiring layer. A dummy substrate made of silicon oxide sputter-etched in a process chamber of a plasma processing apparatus by using an inert gas plasma. In the process chamber of the plasma processing apparatus where sputter etching has been performed, the surface of the metal wiring layer exposed to a bottom portion of the first opening is sputter-cleaned by using an inert gas plasma.
Patent TW-446728-B (TW)
Title: A far-infrared EVA foam
Inventor: SHIU HUNG-YI
IPC: C08L23/04
Filed: 1999-04-28
Granted: 2001-07-21
Abstract: A far-infrared EVA foam essentially consisting of 100 PHR (parts per hundred resin) of EVA (ethylene vinyl acetate copolymer), 10 to 30 PHR of CaCO3, 3 to 6 PHR of ZnO, 3 to 6 PHR of ADCA (azodicarbonamide), 1 to 3 PHR of dicumyl peroxide, 6 to 10 PHR of ceramic powder far-infrared and 1 to 2 PHR of fatty acids, 1 to 2 PHR of co-agent.
Patent TW-384455-B (TW)
Title: Beverage mixing dispenser
Inventor: GOIIZUKA AKIRA
IPC: B67D3/00
Filed: 1999-05-19
Granted: 2000-03-11
Abstract: For each beverage, a beverage dispenser has a plurality of vending buttons 2, for setting rates of mixture of liquid carbonic acid water, such as Cola, where the button 2-C1 is set for more carbonic acid mixture, while buttons 2-C2 are set at a medium-level rate of mixture of carbonic acid and buttons 2-C3 set for less mixture rate of liquid carbonic acid. By pressing the 2-C1 button, Cola with high carbonic acid is dispensed and by pressing the 2-C2 button, Cola medium carbonic acid is dispensed and by pressing the 2-C2 button, Cola low carbonic acid is dispensed.
Patent TW-438699-B (TW)
Title: Deep water lowering apparatus
Inventor: CALKINS DENNIS EARL
IPC: B66C1/00
Filed: 1999-06-25
Granted: 2001-06-07
Abstract: A deep water lowering apparatus that utilizes dual davit structures mounted on a barge. Each davit structure has a pulling wire rope line spooled on a storage winch. Each pulling line is reeved onto a traction winch and through upper and lower sheaves on the davit structure. Corresponding ends of each pulling line are connected together on an equalizer beam. An adaptor box is suspended from a spreader bar provided with a dog leg center portion for effecting the load transfer from the crane. The lowering tool that supports the load is directly received in the adaptor box and transfers the load to the lowering apparatus without the need for rigging work.
Patent TW-498483-B (TW)
Title: Borophosphosilicate glass incorporated with fluorine for low thermal budget gap fill
Inventor: CHAKRAVARTI ASHIMA B
IPC: H01L21/316
Filed: 1999-10-01
Granted: 2002-08-11
Abstract: A method of depositing a fluorinated borophosphosilicate glass (FBPSG) on a semiconductor device as either a final or interlayer dielectric film. Gaps having aspect ratios greater than 6:1 are filled with a substantially void-free FBPSG film at a temperature of about 480 DEG C at sub-atmospheric pressures of about 200 Torr. Preferably, gaseous reactants used in the method comprise TEOS, FTES, TEPO and TEB with an ozone/oxygen mixture. Dopant concentrations of boron and phosphorus are sufficiently low such that surface crystallite defects and hygroscopicity are avoided. The as-deposited films at lower aspect ratio gaps are substantially void-free such that subsequent anneal of the film is not required. Films deposited into higher aspect ratio gaps are annealed at or below about 750 DEG C, well within the thermal budget for most DRAM, logic and merged logic-DRAM chips. The resultant FBPSG layer contains less than or equal to about 5.0 wt% boron, less than about 4.0 wt% phosphorus, and about 0.1 to 2.0 wt% fluorine.
Patent TW-434383-B (TW)
Title: Device for distributing materials in bulk with a rotary chute having a variable angle of inclination
Inventor: LONARDI EMILE
IPC: C21B7/20
Filed: 1999-11-24
Granted: 2001-05-16
Abstract: A device for distributing materials in bulk comprises a suspension rotor (20) mounted in an outer casing (14). A chute (32) is provided with two suspension arms (34, 34'), each of which is connected to the said suspension rotor (20) by means of a suspension pin (36, 36') so as to define a pivoting axis for the chute (32) on the suspension rotor (20). A control lever (52, 52') is connected by means of an articulated joint (54, 54') to the suspension rotor (20). A driving mechanism transmits a pivoting torque to the control lever (52, 52'). A stop (56, 56') on the control lever (52, 52') comes into contact with a counterstop (58, 58') on the suspension arm (34, 34') so as to transmit the pivoting torque to the said arm.
Patent TW-456099-B (TW)
Title: DC electric fan with sleep mode control unit and its control method
Inventor: GUO GUEI-WEI
IPC: H02P7/00
Filed: 2000-01-31
Granted: 2001-09-21
Abstract: A kind of DC electric fan uses a supplied power and a sleep/non-sleep signal to control the rotation speed of DC electric fan. The DC electric fan contains a DC brushless motor, which is the motive power source of DC electric fan, and a sleep mode control unit, which is electrically connected with the DC brushless motor. The sleep mode control unit is used to receive signals and output the operating electric power based on the supplied power and the sleep/non-sleep signal so as to control the rotation speed of DC brushless motor.
Patent TW-463391-B (TW)
Title: Photoelectric conversion functional element and production method thereof
Inventor: SATO KENJI
IPC: H01L33/00
Filed: 2000-02-03
Granted: 2001-11-11
Abstract: The present invention is a photoelectric conversion functional element which uses a compound semiconductor crystal substrate consisting of group 12 (2B) elements and group 16 (6B) elements in the periodic table, wherein a substrate low in dislocation density and deposition density is used, elements for forming the substrate of a first conduction type into one of a second conduction type are thermally diffused from the substrate surface to thereby form pn junctions, and electrodes are formed on the front and rear surfaces of the substrate. In addition, a diffusion source containing elements used for said first conduction type-to-second conduction type conversion of said substrate is disposed on the front surface of said substrate to prevent formation of deficiencies for compensating for an impurity level formed by the elements in said substrate during a diffusion process and getter the impurities on the front surface of the substrate by means of said diffusion source. Accordingly, a conduction type of a II-VI compound semiconductor can be controlled to permit a stable production of photoelectric conversion functional elements excellent in luminous characteristics.
Patent TW-463169-B (TW)
Title: Dual VT SRAM cell with bitline leakage control
Inventor: KESHAVARZI ALI
IPC: G11C11/412
Filed: 2000-03-10
Granted: 2001-11-11
Abstract: In some embodiments, the invention includes an integrated circuit including a bitline and a bitline#, wordlines, and memory cells. The memory cells each corresponding to one of the wordlines and each include first and second pass transistors coupled between first and second storage nodes, respectively, and the bitline and bitline#, respectively, the corresponding wordline being coupled to gates of the first and second pass transistors. The memory cells include first and second inverters cross-coupled between the first and second storage nodes, wherein the first and second pass transistors each have a lower threshold voltage than do transistors of the first and second inverters. Wordline voltage control circuitry coupled to the wordlines selectively controls wordline signals on the wordlines. In some embodiments, the wordline voltage control circuitry asserts the wordline signal for a selected wordline corresponding to a memory cell selected to be read and underdrives the wordline signals for the wordlines not corresponding to the selected memory cell.
Patent TW-452910-B (TW)
Title: System and method for the real time determination of the in situ emissivity of a workpiece during processing
Inventor: HEBB JEFFREY PAUL
IPC: G01J5/02
Filed: 2000-03-22
Granted: 2001-09-01
Abstract: A system (10) and method for determining the reflectivity of a workpiece (W) during processing in a heating chamber (74) of a thermal processing apparatus (22). The system first determines directly the reflectivity of the workpiece outside of the heating chamber (74) of the thermal processing apparatus, and then determines the reflectivity of the workpiece during processing within the heating chamber (74) of the thermal processing apparatus (22) by correlating the ex situ wafer reflectivity with the intensity of the radiation reflected from the wafer within the heating chamber.
Patent TW-I288749-B (TW)
Title: Polymorph of 5-[4-[2-(N-methyl-N-(2-pyridyl)amino)ethoxy]benzyl]thiazolidine-2,4-dione, maleic acid salt, the process for preparing the same and pharmaceutical composition comprising the same
Inventor: BLACKLER PAUL DAVID JAMES
IPC: A61P/
Filed: 2000-04-24
Granted: 2007-10-21
Abstract: A polymorphic form of 5-[4-[2-(N-methyl-N-(2-pyridyl)amino)ethoxy]benzyl]thiazolidine-2,4-dione, maleic acid salt (the ""Polymorph"") characterised in that it provides: (i) an infra red spectrum containing peaks at 1752, 1546, 1154, 621, and 602 cm<-1>; and/or (ii) a Raman spectrum containing peaks at 1751, 1243 and 602 cm<-1>; and/or (iii) a solid-state nuclear magnetic resonance spectrum containing peaks at 111.9, 114.8, 119.6, 129.2, 134.0, 138.0, 144.7, 153.2, 157.1, 170.7, 172.0 and 175.0 ppm; and/or (iv) an X-ray powder diffraction (XRPD) pattern which gives calculated lattice spacings of 6.46, 5.39, 4.83, 4.68, 3.71, 3.63, 3.58, and 3.48 Angstroms.; a process for preparing such a compound, a pharmaceutical composition containing such a compound and the use of such a compound in medicine.
Patent TW-442934-B (TW)
Title: Assembling method of passive component on substrate of integrated circuit package
Inventor: JUANG RUEI-YU
IPC: H01L23/28
Filed: 2000-04-28
Granted: 2001-06-23
Abstract: An assembling method of passive component on substrate of integrated circuit package is provided to assemble the passive components on the substrate of an integrated circuit package, such as the substrate used in ball-grid array type integrated circuit package structure. This passive component may be resistor or capacitor. The special feature of the assembling method of passive component in accordance with the present invention is to use an electrical insulating material, such as epoxy resin, to fill the gap existed between the passive component and the substrate. Since the assembling method of passive component in accordance with the present invention will not have gap between the passive component and the substrate, the disadvantages caused by the well-known technology, such as bridging short circuit phenomenon, popcorn effect, and dislocation effect can be resolved.
Patent TW-463260-B (TW)
Title: An improved method for etching TiN and SiO2 materials at the same rate
Inventor: HAVARD CORINNE
IPC: H01L23/525
Filed: 2000-06-28
Granted: 2001-11-11
Abstract: A method of etching TiN and SiO2 materials at substantially the same rate in a structure which is a part of a silicon wafer. This structure comprises a bottom metal layer and a top insulating SiO2 layer with a metal pad formed thereon, wherein said metal pad consists of a TiN layer overlying an A1-Cu layer. According to the method, the wafer is placed on the helium cooled electrostatic chuck of the vacuum chamber of a RIE etcher to which is applied a power lower than 500 W and is contacted with a flow of NF3 gas greater than 40 sccm. The pressure of the helium gas usually used to cool the wafer is reduced as much as possible (e.g. 2 Torr) to increase the wafer temperature (e.g. 150 DEG C). A SiO2:TiN selectivity equal to about 2 with a good uniformity across the wafer is obtained. In addition, no polymer byproducts are generated during the etching step making the process very clean.
Patent TW-472241-B (TW)
Title: Trilayer seed layer structure for spin valve sensor
Inventor: LIN TSANN
IPC: H01F10/32
Filed: 2000-07-26
Granted: 2002-01-11
Abstract: A trilayer seed layer structure is employed between a first read gap layer and a spin valve sensor for improving the magnetic and giant magnetoresistive properties and the thermal stability. In the spin valve sensor, the trilayer seed layer structure is located between a first read gap layer and a ferromagnetic free layer. The antiferromagnetic pinning layer is preferably nickel manganese (Ni-Mn). The trilayer seed layer structure includes a first seed layer that is a first metallic oxide, a second seed layer that is a second metallic oxide and a third seed layer that is a nonmagnetic metal. A preferred embodiment is a first seed layer of nickel oxide (NiO), a second seed layer of nickel manganese oxide (NiMnOx), and a third seed layer of copper (Cu).
Patent TW-457541-B (TW)
Title: Method of manufacturing semiconductor device
Inventor: KAWAGUCHI MASATERU
IPC: H01L21/768
Filed: 2000-09-14
Granted: 2001-10-01
Abstract: This invention provides a method of manufacturing semiconductor device, which includes: forming a second insulating film on the surface of a semiconductor substrate, forming a third insulating film on the film as an interlayer film, furthermore, forming a contact hole in a manner so as to pass through the third film and reach the surface of the second film, forming a fourth insulating film on the third film having the hole formed therein, the fourth insulating film and the second film being etched, using an anisotropic etching method to form a sidewall made of the fourth insulating film on the side surface of the hole and to expose the surface of the substrate to the hole.
Patent TW-554602-B (TW)
Title: Method and apparatus for multifrequency power distribution
Inventor: DROBNIK JOSEF C
IPC: G06F1/26
Filed: 2000-09-20
Granted: 2003-09-21
Abstract: A method for distributing power in an electronic system includes receiving power on a first domain at a system power supply, converting the power to a second domain having an alternating current (AC) signal components at multiple frequencies, and transmitting the converted power in the second domain with AC signal components at multiple frequencies to multiple voltage regulator modules (VRM) in the electronic system.
Patent TW-533242-B (TW)
Title: A direct smelting process
Inventor: BATTERHAM ROBIN JOHN
IPC: C22B5/10
Filed: 2000-11-01
Granted: 2003-05-21
Abstract: A direct smelting process and a fixed, i. e. non-rotatable, metallurgical vessel for producing metal from a metalliferous feed material is disclosed. The process is a molten bath-based process which includes injecting solid feed materials with a carrier gas into the molten bath via one or more downwardly extending lance/tuyere (11) and causing gas flow from the molten bath at a flow rate of at least 0.30 Nm<3>/s/m<2> at the interface between the metal layer (15) and the slag layer (16) of the molten bath (under quiescent conditions).
Patent TW-508293-B (TW)
Title: Raw material supply device and control method
Inventor: YAMAGUCHI KAZUMI
IPC: B29C31/00
Filed: 2000-10-02
Granted: 2002-11-01
Abstract: The invention provides a raw material supply device and a control method thereof that can be easily added to the commonly seen raw material supply device and avoids pollutant entering into the forming machine. The raw material supply device 1 supplies raw material Pi to the forming machine I. Certain amount of raw material Pi is supplied after being dried by the dryer device 10. Then the supplied raw material Pi is conveyed by air that is from a pressurizing device 3 to multiple hoppers Ho through main pipeline 9 and branch pipelines Q. Control valves CV are installed at the hoppers' exhaust sides. Additive supply device 40 installed around the branch pipe Q of the specified hopper Ho supplies additive. By opening the control valve CV, raw material and/or additive Sm can be supplied to the forming machine I.