Patent SG-11201804346P-A (SG)
Title: Atomic layer deposition process for fabricating dielectric metasurfaces for wavelengths in the visible spectrum
Inventor: DEVLIN ROBERT C
IPC: H01L31/02
Filed: 2016-11-23
Abstract: FusedSilica F Fused Silica () INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau 111111111M 11111111111111111111111111111111111111111111111111111111111R111111111111111 (10) International Publication Number WO 2017/091738 Al WIPO I PCT (43) International Publication Date 1 June 2017 (01.06.2017) (51) International Patent Classification: Avenue, Smith Campus Center 727E, Cambridge, Mas- G02B 1/00 (2006.01) G03F 1/50 (2012.01) sachusetts 02138 (US). CAPASSO, Federico; c/o Harvard G02B 27/42 (2006.01) HO1L 31/02 (2006.01) University, Office of Tech Dev, 1350 Massachusetts Aven- (21) International Application Number: PCT/US2016/063617 ue, Smith Campus Center 727E, Cambridge, Massachusetts 02138 (US). PARK, Hongkun; c/o Harvard University, Office of Tech Dev, 1350 Massachusetts Avenue, Smith Campus Center 727E, Cambridge, Massachusetts 02138 (22) International Filing Date: (US). HIGH, Alexander Arthur; c/o Harvard University, 23 November 2016 (23.11.2016) Office of Tech Dev, 1350 Massachusetts Avenue, Smith (25) Filing Language: English Campus Center 727E, Cambridge, Massachusetts 02138 (US). (26) Publication Language: English (74) Agents: LIU, Cliff et al.; Foley & Lardner LLP, 3000 K (30) Priority Data: Street N.W., Suite 600, Washington, District of Columbia 62/259,243 24 November 2015 (24.11.2015) US 20007-5109 (US). (71) Applicant: PRESIDENT AND FELLOWS OF HAR- (81) Designated States (unless otherwise indicated, for every VARD COLLEGE [US/US]; 17 Quincy Street, Cam- kind of national protection available): AE, AG, AL, AM, bridge, Massachusetts 02138 (US). AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (72) Inventors: DEVLIN, Robert C.; c/o Harvard University, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, Office of Tech Dev, 1350 Massachusetts Avenue, Smith DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, Campus Center 727E, Cambridge, Massachusetts 02138 HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, (US). KHORASANINEJAD, Mohammadreza; c/o Har- KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, vard University, Office of Tech Dev, 1350 Massachusetts MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, [Continued on next page] (54) Title: ATOMIC LAYER DEPOSITION PROCESS FOR FABRICATING DIELECTRIC METASURFACES FOR WAVELENGTHS IN THE VISIBLE SPECTRUM (57) : A method of fabricating a visible spectrum optical component includes: providing a substrate; forming a resist layer over a surface of the substrate; patterning the res - ist layer to foiin a patterned resist layer defining openings exposing portions of the surface of the substrate; performing deposition to form a dielectric film over the patterned resist layer and over the exposed portions of the surface of the sub- strate, wherein a top surface of the dielectric film is above a top surface of the patterned resist layer; removing a top por- tion of the dielectric film to expose the top surface of the patterned resist layer and top surfaces of dielectric units within the openings of the patterned resist layer; and remov- ing the patterned resist layer to retain the dielectric units over the substrate. B A t resist Fused Silica Fused Silica E t TIim Fused Silica W O 20 17 /09 17 38 Al G FIG. 1 WO 2017/091738 Al MIONIMOREMIMOIDERIMMEDIDEHMODEVOIS OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.170) Published: with international search report (Art 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h))