baber/WOPTO huggingface dataset:
Patent TW-501156-B (TW)
Title: Low-voltage multipole circuit breaker with high electrodynamic strength, whose pole shaft is located in the pole housing compartment
Inventor: HERPIN JEAN-PHILIPPE
IPC: H01H33/42
Filed: 1999-06-01
Granted: 2002-09-01
Abstract: A low-voltage multipole circuit breaker 10 with high electrodynamic strength comprises a case made of insulating material, subdivided into a front compartment 12 housing an operating mechanism 24 commanding opening and closing of the circuit breaker and a rear compartment 14 separated from the front compartment by an intermediate wall 20. The rear compartment 14 is itself subdivided into individual compartments 36 by separating partitions 38, each individual compartment 36 housing one of the poles 56 of the circuit breaker. The operating mechanism 24 is linked to a pole shaft 78 common to all the poles 56. The pole shaft 78 is located in the rear compartment 14 and supported by bearings passing through the separating partitions.
Patent TW-437060-B (TW)
Title: Integrated circuit-arrangement with at least a transistor and the method for its production
Inventor: BERTAGNOLLI EMMERICH
IPC: H01L21/8239
Filed: 1999-10-15
Granted: 2001-05-28
Abstract: This transistor is constructed as a vertical MOS-transistor and includes a layer-sequence (SF, SF*) that is arranged on a substrate (1) doped by a first conductive type, said layer-sequence has: a lower layer (U) for a first source/drain-region; a middle layer (M), which is doped by a first conductive type, for a channel-region; an upper layer (O) for a second source/drain-region. In order to electrically connect the channel-region with the substrate (1), a connection-structure (V) doped with the first conductive type is arranged on at least a first area of the layer-sequence (SF, SF*). The connection-structure (V) can be arranged between the layer-sequence (SF, SF*) and the other layer-sequence (SF, SF*), which can belong to the same or to the other transistor. The sizes of the connection-structure (V) and the layer-sequence (SF, SF*) can be sub-lithographic. The generation is carried out self-adjustedly. The circuit-arrangement is suitable to be acted as a memory-cells arrangement with higher packing-density.
Patent TW-426972-B (TW)
Title: Method of forming the extending junction of source/drain by using Si-B layer in fabricating complementary metal oxide semiconductor field effect transistor
Inventor: CHEN DUNG-PO
IPC: H01L21/8238
Filed: 1999-09-28
Granted: 2001-03-21
Abstract: This invention is about the fabrication method of complementary metal oxide semiconductor (CMOS) field effect transistor and includes the following procedures. The gate pattern of a p-type metal oxide semiconductor field effect transistor (MOSFET) and the gate pattern of an n-type MOSFET are formed on p-type semiconductor substrate and n-type well region. An n<SP>-</SP>-type dopant is implanted in order to form an n<SP>-</SP>-type lightly doped source/drain. The first dielectric layer is deposited on p-type semiconductor substrate and n-well region. The second defined photoresist layer is formed on the first dielectric layer. After that, the first etching is performed onto the n-well region to etch one part of the first dielectric layer. During one part of the first etching process period for the first dielectric layer, a compensation spacer is formed on n-well region. A silicon-boron (Si-B) layer is deposited on n-well region and the first dielectric layer. The Si-B layer is oxidized to form the boron silicon glass layer. The first diffusion of boron atoms into n-well region is performed to form a p<SP>-</SP>-type lightly doped source/drain. The second dielectric layer is deposited on the boron silicon glass layer. The first layer of boron silicon glass spacer and the second layer of boron silicon glass spacer are formed by etching one part of the second dielectric layer and one part of the boron silicon glass layer, and the second etching of one part of the first dielectric layer. Then, an n<SP>+</SP>-type heavily doped source/drain is formed in p-type semiconductor substrate. A p<SP>+</SP>-type heavily doped source/drain is formed in n-well region. Finally, the first layer of boron silicon glass spacer is annealed. The second diffusion of boron atom into the region under the first layer of boron silicon glass spacer is performed to form an extending junction of source/drain into a p-type MOSFET.
Patent TW-477753-B (TW)
Title: Pressure regulating tire valve and core
Inventor: SUMRALL DIRK L
IPC: F16K15/20
Filed: 1999-10-22
Granted: 2002-03-01
Abstract: The present invention is related to air pressure valve stems and gauges. More particularly, this invention relates to particularly to a tire stem valves possessing a built-in calibrated air pressure regulator and an optional integrated air pressure indicator.
Patent TW-448446-B (TW)
Title: Semiconductor memory device
Inventor: SERIZAWA KENICHI
IPC: G11C11/412
Filed: 1999-10-29
Granted: 2001-08-01
Abstract: A semiconductor memory device in an SRAM using a 4 transistor-type memory cell which device includes an error writing protection circuit for preventing any information from being written into a memory cell into which any information is not needed to be written owing to line capacitance between adjacent bit lines. The error writing protection circuit includes an N-type transistors, a P-type transistor, and diodes. Hereby, it is determined whether or not a bit line is charged with electricity in accordance with electric potential of an adjacent bit line, and there is not charged with electricity a bit line for which there is no possibility of any information from being written, but there is charged with electricity only bit lines where there is possibility of any information being written in error. Thus, there is flowed no excess current.
Patent TW-486617-B (TW)
Title: Manufacturing method of cylindrical heat dissipation device
Inventor: CHEN SHIN-YI
IPC: G06F1/20
Filed: 1999-11-11
Granted: 2002-05-11
Abstract: There is provided a manufacturing method of cylindrical heat dissipation device, which comprises: (1) drawing and forming a hollowed cylindrical base having an outer edge protruded therefrom a plurality of heat fin raw substances in a diameter direction; (2) cutting the lengthwise raw substance by a suitable length to form raw material; (3) paring the top section of the hollowed cylindrical base by lathe from one side face of the raw material in an axial direction to make the top section of each heat sink separated from each other to form a free terminal, thereby making each heat sink integrally connected to the hollowed cylindrical base only by the root section; and (4) embedding a fan seat in the bottom hole of the hollowed cylindrical base, there by completing the manufacture of the cylindrical heat dissipation device.
Patent TW-425293-B (TW)
Title: Aerosol container
Inventor: NAKAMURA YUKIO
IPC: B65D83/14
Filed: 1999-12-15
Granted: 2001-03-11
Abstract: An aerosol container 10 having a perforated nozzle member 11 disposed at a distal end of a container body 12 with a content stored therein and for discharging the content onto the sole of a foot by stepping on the perforated nozzle member 11, wherein projections are provided at a location surrounding a plurality of nozzle ports 14 formed in the perforated discharge nozzle member 11 and an interval between a sole side of the foot and the nozzle ports 14 is retained by the projection when the perforated discharge nozzle member 11 is stepped on. The projections surrounding the plurality of nozzle ports 14 are an annular wall 32 and an upper end of the annular wall 32 is defined as an opening having a size dimension able to be covered with the sole of a foot.
Patent TW-452986-B (TW)
Title: Thin film transistor and method of manufacturing same
Inventor: WATANABE TAKUYA
IPC: G02F1/1368
Filed: 2000-01-05
Granted: 2001-09-01
Abstract: A thin film transistor wherein at least one of (1) a gate electrode and/or a scanning line therefor and (2) source/drain electrode and/or signal lines therefor comprises a laminated wiring structure in which a main wiring layer formed of a metal selected from A1 and Cu or an alloy based on the metal is sandwiched between an underlying wiring layer and an overlaying wiring layer, the underlying and overlaying wiring layers being formed of a material based on a metal or alloy of metals and containing nitrogen, the metal being selected from Ti, Mo, W, Cr, Al and Cu, and the materials used in the underlying and overlaying wiring layers being different from each other. Alternatively, the underlying and overlaying wiring layers are formed of a material based on the same metal or alloy of metals and containing nitrogen, the metal being selected from Ti, Mo, W, Cr, Al and Cu, and contents of nitrogen in the underlying and overlaying wiring layers being different from each other. A method of manufacturing such a thin film transistor is also disclosed.
Patent TW-474028-B (TW)
Title: Light-emitting device based on indirect bandgap material
Inventor: LIN CHING-FU
IPC: H01L27/15
Filed: 2000-02-18
Granted: 2002-01-21
Abstract: A new type light-emitting device uses electroluminescence generated from an indirect bandgap material. The periodic coarse structure with very short period on the surface of the indirect bandgap material is perturbed based on the perturbation theory of quantum mechanics. Extra momentum compensation is provided for electrons and holes, which have different momentum in the unperturbed indirect bandgap material, to observe momentum conservation during radiative recombination. Thereby, electroluminescence is achieved.
Patent TW-434721-B (TW)
Title: Method of cleaning prior to forming dielectric layer on polysilicon layer
Inventor: JU HUEI-CHI
IPC: H01L21/302
Filed: 2000-02-22
Granted: 2001-05-16
Abstract: The present invention discloses a method of cleaning prior to forming a dielectric layer on a polysilicon layer, which comprises forming a first polysilicon layer and a silicide layer on a substrate; washing the surface with a dilute DHF solution to remove the residual particles and fluorides on the surface of the silicide; and performing the subsequent steps of dielectric layer depositing and contact opening.
Patent TW-413742-B (TW)
Title: Dial including brilliants, appliques or other applied elements and method for securing such elements thereto
Inventor: BOSSEL CHRISTOPHE
IPC: G04B19/12
Filed: 2000-02-29
Granted: 2000-12-01
Abstract: The invention concerns a dial (1), in particular for a timepiece, including a plate having at least one recess defining a housing (6) in which a decorative element (8) or suchlike is secured, characterised in that the housing (6) includes a bottom (14) formed of an adhesive strip (16), the adhesive face of which comes into contact with the decorative element (8).
Patent TW-552256-B (TW)
Title: Process for preparing an aromatic compound substituted by a tertiary nitrile
Inventor: CARON STEPHANE
IPC: C07C253/30
Filed: 2000-04-17
Granted: 2003-09-11
Abstract: A process is described for preparing an aromatic compound substituted by a tertiary nitrile of formula (1.0.0), comprising treating a substituted aromatic compound of formula (2.0.0), with a secondary nitrile of formula (3.0.0), in the presence of a base having a pKa numerical value in the range of from about 17 to about 30, provided that the difference in pKa numerical values between said base and the corresponding tertiary nitrile of formula (3.0.0) is no more than about 6; in an aprotic solvent having a dielectric constant (epsilon) of less than about 20; and at a reaction temperature in the range of from about 0 DEG to about 120 DEG; whereby there is formed said tertiary-nitrile-substituted aromatic compound final product of formula (1.0.0); wherein the constituent parts W1, W2, W3, W4, and W5; and the substituent moieties R1, R2, R3, R4, R5, R6, and R7 in the compounds of formulas (1.0.0), (2.0.0) and (3.0.0) are selected from known organic groups and radicals as further detailed in the instant specification.
Patent TW-470722-B (TW)
Title: Automatic cycle pedal
Inventor: PEYRE HENRI
IPC: B62M3/08
Filed: 2000-06-20
Granted: 2002-01-01
Abstract: The pedal is of a type comprising a pedal body (1) provided with a fixed front hook (2) for engagement with a retaining plate fixed below a bicycle shoe, and a rear engagement hook (3) carried by a swinging lever (5) articulated on a support (6) in the pedal body (1) whilst being continuously urged by resilient means (11) toward the retaining position of the rear hook. The front and rear hooks (2, 3) are adapted to coact to maintain the retaining plate of the shoe against a bearing surface (4) provided on an upper surface of the pedal. The resilient means comprises a curved resilient leg (11) coacting with said lever (5), and the curved resilient leg (11) is associated with a snap-on securement means (14) onto a pedal axle (3) adapted to be connected to a pedal crank.
Patent TW-471009-B (TW)
Title: Method and apparatus for preventing edge deposition
Inventor: YUDOVSKY JOSEPH
IPC: H01L21/205
Filed: 2000-09-01
Granted: 2002-01-01
Abstract: A substrate support having a removable edge ring, which is made of a material having a lower coefficient of thermal expansion (CTE), than that of the substrate support is provided, The edge ring and the substrate support are configured for pin and slot coupling. Specifically, either the edge ring, or the substrate support comprises a plurality of pins, and the other of the edge ring or the substrate support comprises a plurality of hollow regions or slots in which the pins may be inserted. The slots are at least as wide as a corresponding one of the plurality of pins and extend in the direction in which the substrate support expands and contracts during thermal cycling. Each of the slots extends a length which is sufficient to compensate for the difference between the CTE of the substrate support and the CTE of the edge ring, over the range of process temperatures to which the apparatus is exposed. Preferably the susceptor is made of aluminum, and the edge ring is made of ceramic. A restrictor gap may by defined between a surface of the substrate support and a surface of the purge ring so as to restrict a volume of purge gas flowing to an edge of a substrate positioned on the substrate support. The purge gas delivery channel-may have an exposed outlet and may be upwardly angled to facilitate cleaning.
Patent TW-467774-B (TW)
Title: Strip casting
Inventor: FUKASE HISAHIKO
IPC: B22D11/06
Filed: 2000-11-18
Granted: 2001-12-11
Abstract: Start up method for initiating casting of metal strip in a twin roll caster comprising parallel casting rolls (16). A casting pool of molten metal is supported on the casting rolls and confined at the ends of the rolls by side closure plates (56) and the rolls are rotated to deliver cast strip downwardly from the nip between them. One roll (16) is continuously biased laterally toward the other roll (16) either by spring biasing units (110) or by hydraulic biasing units (11). On start up the gap between rolls (16) is set so as to be less than the thickness of the strip to be cast and the rolls are rotated at such speed that on pouring of molten metal to initiate casting strip is produced to a thickness which is greater than the initial gap between the rolls thereby to cause the biased roll (16) to move bodily away from the other roll to increase the gap between the rolls to accommodate the thickness of the cast strip. This allows initiation of casting without the need for introduction of a dummy bar between the rolls. The peripheral surfaces of rolls (16) may have a negative crown c and the initial gap at the centres of the rolls may be d0=2c+g0 where g0 is an initial roll edge gap.
Patent TW-526244-B (TW)
Title: Reactive dyes containing a formazan dye radical and a monoazo dye radical, a process for their preparation and their use
Inventor: REICHERT HANS
IPC: C09B62/08
Filed: 2000-09-29
Granted: 2003-04-01
Abstract: Reactive dyes of formula (1) wherein R1, R2, R3 and R4 are each independently of the others hydrogen or unsubstituted or substituted C1-C4 alkyl, X1 and X2 are halogen, B is a C2-C12 alkylene radical which may be interrupted by 1, 2 or 3 -O- members and is unsubstituted or substituted by hydroxy, A is a formazan radical of formula (2) or (3) D is a radical of formula (4) or (5) wherein m is the number 1 or 2, n is the number 1, 2 or 3 and (R5)0-2 denotes from 0 to 2 identical or different substituents from the group C1-C4 alkyl, C1-C4 alkoxy, C2-C4 alkanoylamino and halogen, are suitable especially for dyeing or printing hydroxy-group-containing or nitrogen-containing fiber materials. Olive-green dyeings are obtained having good fastness properties and a high tinctorial yield.
Patent TW-546952-B (TW)
Title: Enhanced video programming system and method utilizing user-profile information
Inventor: ABATO MICHAEL R
IPC: H04L12/56
Filed: 2000-12-27
Granted: 2003-08-11
Abstract: A file specifying a ""donut"" of dynamic, hierarchical, shared user-profile information is maintained. The donut contains a user-profile, or acts as a key to a data repository containing such a user-profile, and the donut specifies user-profile information such as user characteristics, viewing preferences, hobbies, and spending habits. The donut may be stored in a network server or in a user's machine which is connectible to the network. The donut is accessed by browser programs, associated web server programs, and other applications for use in routing content to the user associated with the donut. The donut implements a dynamic store of user profile-data which may be exchanged between the user and the server. This enables, for example, advertising to be tailored to the user based on the users responses to specific questions and/or on the user profile.
Patent TW-477765-B (TW)
Title: Cage plate adjusting mechanism for a bicycle rear derailleur
Inventor: FUKUDA MASAHIKO
IPC: B62M9/126
Filed: 2000-10-04
Granted: 2002-03-01
Abstract: An adjusting mechanism is provided for a bicycle derailleur, which can adjust a position of a chain guide in an axial direction. The derailleur basically has a base member, a movable member with a chain guide and a linkage assembly. The adjustment member is operatively coupled between the movable member and the chain guide. In one embodiment, the movable member has the adjusting mechanism that movably supports the movable member in an axial direction on the second axle. The adjusting mechanism basically has a first tubular guide portion extending from the movable member to pivotally engage the second axle. A second tubular guide portion extends from the chain guide and is arranged around the first tubular guide portion. A biasing member is positioned between the first and second tubular guide portion to urge the movable member relative to chain guide in a rotational direction about the second axle. In another embodiment, the base member has an adjusting mechanism that movably supports the base member in an axial direction on the first axle.
Patent TW-I224966-B (TW)
Title: Pharmaceutical composition (I) useful for treating or preventing pulmonary hypertension in a patient
Inventor: SALEEM BUTROUS GHAZWAN
IPC: A61K31/52
Filed: 2000-10-09
Granted: 2004-12-11
Abstract: This invention relates to the use of certain cyclic guanosine 3',5'-monophosphate phosphodiesterase type five (cGMP PDE5) inhibitors, including in particular the compound sildenafil, for the treatment of pulmonary hypertension.
Patent TW-480535-B (TW)
Title: Self-tuning electrodeless lamps
Inventor: MACLENNAN DONALD A
IPC: H01J65/04
Filed: 2000-11-23
Granted: 2002-03-21
Abstract: A self-tuned system includes an oscillator (30) and an oscillator-driven load which uses the oscillator-driven load as a frequency determining element of the resonant system. In one illustration, the oscillator-driven load is a lamp head circuit for an electrodeless lamp. The lamp head circuit of the electrodeless lamp comprises an excitation coil (40) proximate an envelope or bulb (42) enclosing a fill, the fill forming a plasma discharge when ignited. Various oscillator configurations can be used with the load, including modified Hartley (30A), modified Colpitts (Clapp) (30B), and modified Armstrong configurations (30C). Various embodiments of clamping circuits (100) can also be utilized to limit a feedback signal applied by the feedback system to region tolerated by the amplifier. Of particular interest to the present invention are self-tuned systems which operate at high frequency and high power. Example implementations of high frequency and high power electrodeless lamps are provided, as well various inventive techniques for, e.g., providing sufficient gain and for enhancing ignition/self-starting (e.g., reducing start time) of high frequency, high power self-tuned systems. Techniques and arrangements for ensuring sufficient gain for the self-tuned systems of the invention include choice of oscillator configuration, multi-stage amplification (when required), and feedback system configuration. Self-ignition of the load is achieved in numerous ways, such as (for example) using a special starting oscillator; using a low pressure rate gas fill for the lamp bulb; and increasing current in the excitation coil (e.g., by selectively positioning a juncture of a tap (60) to the excitation coil).
Patent TW-530527-B (TW)
Title: Hot lamination of a dry photoresist film onto a board for printed circuit
Inventor: CANDORE AMEDEO
IPC: B32B37/22
Filed: 2000-11-29
Granted: 2003-05-01
Abstract: An automatic machine for hot laminating a dry photoresist film supported on a peelable-off cover sheet onto a board for printed circuit, includes at least a pair of hot laminating rolls, transfer means for feeding a preheated board to the inlet side of said pair of laminating rolls, at least a supply roll of a rolled-up continuous ribbon of said supported dry photoresist film, vacuum means holding a free end portion of the supported dry photoresist film ribbon, means for pressing and tacking the leading edge of said vacuum held free end portion of the ribbon at a given position on a surface of a board moving towards the inlet side of said pair of laminating rolls, cutting means associated to said ribbon end holding and tacking means for cutting to measure, on account of the length of the fed board, the dry photoresist film ribbon carried along by the moving board onto which the leading edge of the ribbon has been tacked by said tacking means, and means for heating said supported dry photoresist film at a certain temperature before laminating it through said pair of rolls. Said holding, tacking and cutting means translate together with the board, while and upon the tacking of the leading edge of the held free end portion of the ribbon onto the surface of the moving board, as far as reaching a position immediately close to said pair of laminating rolls and cutting the held end portion of the ribbon to measure. Said holding, tacking and cutting means are raised away from said position and returned to a start position, rearward of the inlet side of said pair of laminating rolls, and lowered toward an incoming new board for repeating the tacking and translate together with the new fed.