baber/WOPTO huggingface dataset:
Patent TW-I221514-B (TW)
Title: Method and device for freeze utilization of corrosive liquid
Inventor: JU SUNG-FU
IPC: F28D1/04
Filed: 2003-09-24
Granted: 2004-10-01
Abstract: The present invention relates to a method and a device for freeze utilization of a corrosive liquid. A freezer is used to produce a cooling liquid. The cooling liquid is then introduced into a heat exchanger installed in a compartment of a refrigeration box of a cooling unit. Next, a corrosive liquid is introduced into the compartment for the cooling liquid and the corrosive liquid to undergo heat exchange, thereby transforming the corrosive liquid into a refrigerated corrosive liquid at a preset temperature which can be discharged for use. Thus, power can be conserved and the production cost can be reduced.
Patent TW-I224633-B (TW)
Title: Surface treatment method for hot-dip galvanized steel by micro-electric-arc plasma oxidation
Inventor: JUNG SHR-JIUN
IPC: C25D5/10
Filed: 2003-10-17
Granted: 2004-12-01
Abstract: This invention relates to a method of forming an aluminum oxide and zinc oxide plating layer on the surface of hot-dip galvanized steel by utilizing the micro-electric-arc plasma discharging deposition/oxidation. As disclosed is mainly the formation of a plating layer on the substrate of hot-dip galvanized steel which comprises aluminum oxide and zinc oxide, and the method to improve the anti-corrosion properties of the hot-dip galvanized steel. In a reactor tank, a stainless steel piece is connected to the cathode of a pulse power supply while the article to be treated is connected to the anode of the pulse power supply. This method utilizes a pulse power supply which supplies at fixed voltage and current and utilizes an electrolyte which contains 10-30 g/L of sodium aluminate and 2-20 g/L potassium hydroxide or sodium hydroxide with the addition of 5-30 g/L sodium phosphate. The pulse time and the interval time between two pulses are the same and in the range of 0.1-5.0 ms. The current density is 5-20 A/dm<2> with a peak voltage at 300-450 V for 10-60 minutes of treatment time. In addition, the article to be treated can be pre-electroplated with a polymer film. The film thickness of the plating layer by this invented method is around 10-100 mum.
Patent TW-I284580-B (TW)
Title: Method and apparatus for cutting devices from substrates
Inventor: LIU KUO-CHING
IPC: B23K26/38
Filed: 2003-10-30
Granted: 2007-08-01
Abstract: A method and system for cutting a wafer comprising a semiconductor substrate attached to an array of integrated devices includes placing the wafer on a stage such as a movable X-Y stage including a vacuum chuck having a porous mounting surface, and securing the wafer during and after cutting by vacuum pressure through the pores. Directing UV pulses of laser energy at the substrate using a solid-state laser having controlled polarization cuts the wafer. An adhesive membrane can be attached to the separated die to remove them from the mounting surface, or the die can otherwise be removed after cutting from the wafer.
Patent TW-I230971-B (TW)
Title: Vacuum chamber device for preventing the adhesion of stain
Inventor: FAN JR-WEN
IPC: H01L21/00
Filed: 2003-11-21
Granted: 2005-04-11
Abstract: A vacuum chamber device for preventing the adhesion of stain includes: a process room; a clean room connected with the process room, wherein the sidewall of the clean room includes a blower system, so that, when the process room carries out a procedure, a gas steam is produced on the sidewall, and thus the dissociated material in the process room cannot adhere to the sidewall; and a suction system, which is installed at the bottom of the clean room to completely extract the dissociated material produced by the process room and make the vacuum chamber at a vacuum condition.
Patent TW-I237087-B (TW)
Title: Valve system for internal combustion engine
Inventor: NAGANO SHUJI
IPC: F01L1/26
Filed: 2003-11-28
Granted: 2005-08-01
Abstract: There is provided a valve system for an internal combustion engine, in which a rocker shaft required to have a higher stiffness has a larger diameter. A rocker shaft on an intake side is formed to have a (e.g. about 10%) larger diameter than that of a rocker shaft on an exhaust side, and therefore, it is possible to ensure such stiffness as to compensate for an excess in weight and to improve valve operating characteristics of a valve system.
Patent TW-I231738-B (TW)
Title: Computer casing having handle structure
Inventor: YEH YU-CHUN
IPC: H05K5/00
Filed: 2004-01-20
Granted: 2005-04-21
Abstract: The present invention relates a computer casing having a handle structure. The computer casing includes at least a main body, a faceplate and a handle structure, wherein the faceplate having an opening is combined with the computer casing, and the handle structure disposed on one surface of the computer casing is between the computer casing and the faceplate. The handle structure further has a concave structure, which is capable being touched through the opening of the faceplate. Thereby, users can lift up the computer casing with their hand put on the concave structure of the handle structure.
Patent TW-I230440-B (TW)
Title: System and method for integrating multiple metal gates for CMOS applications
Inventor: GAO WEI
IPC: H01L29/78
Filed: 2004-02-24
Granted: 2005-04-01
Abstract: A dual-gate MOSFET with metal gates and a method for setting the threshold voltage in such a MOSFET is provided. The method includes: forming a gate oxide layer overlying first and second channel regions; forming a first metal layer having a first thickness overlying the gate oxide layer; forming a second metal layer having a second thickness overlying the first metal layer having the first thickness; selectively removing the second metal layer overlying the first channel region; forming a third metal layer; establishing a first MOSFET with a gate work function responsive to the thicknesses of the first and third metal layer overlying the first channel region; and, establishing a second MOSFET, complementary to the first MOSFET, with a gate work function responsive to the combination of thicknesses of the first, second, and third metal layers overlying the second channel region.
Patent TW-I243502-B (TW)
Title: Liquid absorbing sheet and nonaqueous electrolyte battery pack
Inventor: HATSUDA KOUKI
IPC: H01M2/10
Filed: 2004-04-05
Granted: 2005-11-11
Abstract: This invention provides a liquid absorbing sheet having a liquid absorbing resin layer, the liquid absorbing resin layer exhibiting excellent liquid absorbing property to a nonaqueous electrolyte of nonaqueous electrolyte secondary battery as a constituent of a nonaqueous electrolyte battery pack (especially a lithium ion nonaqueous electrolyte secondary battery pack), in which as the liquid absorbing resin layer of liquid absorbing sheet, use is made of one obtained by exposing to energy radiation, such as ultraviolet rays, a monomer composition comprising a monofunctional monomer component (A), the component (A) consisting of a polyethylene glycol acrylate monomer and an acrylic monomer having an amido bond, and a polyfunctional monomer component (B) so as to effect polymerization thereof.
Patent TW-I268719-B (TW)
Title: Method and system for managing cooperative positioning among wireless transmit/receive units
Inventor: MARINIER PAUL
IPC: G01S5/02
Filed: 2004-04-06
Granted: 2006-12-11
Abstract: A method and system wherein users are encouraged to participate in cooperative positioning among wireless transmit/receive units (WTRUs) is disclosed. Participating WTRUs determined to be suitable for providing positioning information for target-WTRUs are identified and sent a broadcast message requesting positioning information regarding a target-WTRU (s). Participating wireless transmit/receive units that report positioning information are given a reward or credit.
Patent TW-I259893-B (TW)
Title: Solar furnace
Inventor: LIN HSING-FA
IPC: F24S20/30
Filed: 2004-05-25
Granted: 2006-08-11
Abstract: A solar furnace includes a storage tank, a heat collector, a switch, a reflow pipe, and a furnace body, in which the heat collector is connected to the storage tank and the switch through the two ends of an output pipe. Furthermore, a first outlet of the switch is connected to the reflow pipe for circulation of oil back to the storage tank. A second outlet of the switch is connected to the heating pipe of the furnace. Since the diameter of the heating pipe is smaller than the diameter of the outlet pipe, the oil flowing therethrough receives an increasing resistance and an increasing flow in order to release heat rapidly for achieving the purpose of heating.
Patent TW-I256237-B (TW)
Title: Method and apparatus for handling a charging state in a mobile electronic device
Inventor: VESELIC DUSAN
IPC: H04M19/00
Filed: 2004-05-27
Granted: 2006-06-01
Abstract: The present invention is directed at a method of handling a device charging state for a universal serial bus (USB) connected mobile electronic device comprising the steps of sensing a presence of a bus voltage; sensing an enumeration acknowledgement signal between the device and a USB host; and transmitting a signal to instruct the device to enter the device charging state.
Patent TW-I251873-B (TW)
Title: Cleaning process and apparatus for silicate materials
Inventor: TAN SAMANTHA
IPC: C23C16/44
Filed: 2004-07-26
Granted: 2006-03-21
Abstract: A method for treating a surface of a quartz substrate includes preparing a substrate to provide a working surface having an initial roughness; and then ultrasonically acid-etching the working surface to increase the roughness of the working surface by at least about 10%. In one embodiment, the initial surface roughness is greater than about 10 Ra, and in another embodiment the initial surface roughness is greater than about 200 Ra. In a still further embodiment, the initial surface area, if less than about 200 Ra, is increased to greater than about 200 Ra. In other embodiments of the present invention, the working surface roughness is increased by at least about 25% or at least about 50%. Simultaneous with the increase in surface area (as measured by the roughness), the surface defects are reduced to reduce particulate contamination from the substrate.
Patent TW-I250655-B (TW)
Title: Wafer level package structure of image sensor and method for making the same
Inventor: HUANG YUAN-CHANG
IPC: H01L31/00
Filed: 2004-08-03
Granted: 2006-03-01
Abstract: A wafer level package structure of image sensor and method for making the same are disclosed. The wafer level package structure of image sensor is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have a optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits, and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of image sensor. At last, the transparent layer is diced according to scribe lines to form the individual package devices.
Patent TW-I249975-B (TW)
Title: Surface wave excitation plasma CVD system
Inventor: SUZUKI MASAYASU
IPC: H05H1/46
Filed: 2004-11-02
Granted: 2006-02-21
Abstract: This surface wave excitation plasma CVD system, along with feeding a material gas including silicon element by feeding the material gas into a chamber 1 from at least one of an upper surface gas introduction conduit and a side surface gas introduction conduit, also activates the material gas with a surface wave excitation plasma and feeds a process gas which initiates chemical reactions within the material gas into the chamber 1 from a process gas introduction conduit 5. A gas feed aperture of the upper surface gas introduction conduit and/or the side surface gas introduction conduit is provided in a position which is closer to the substrate than the gas feed aperture of the process gas introduction conduit.
Patent TW-I276925-B (TW)
Title: Exposure device for stripline work
Inventor: MITO ATSUSHI
IPC: G03F7/20
Filed: 2004-11-23
Granted: 2007-03-21
Abstract: To securely detecting a work which has unevenness and is hardly sucked on a work stage, is sucked by holding the work on the work stage so as to suck while preventing a leak. The work stage (10) comprises a 1st stage (10a) on which an exposed area of the work (W) is mounted and 2nd stages (10b) which are provided upstream and downstream in the conveying direction of the stripline work (W) and on which parts other than the exposed area are mounted. Individual vacuum supply systems (16a and 16b) are connected to a 1st hole group (13a) and a 2nd hole group (13b) provided to the 1st and 2nd stages (10a and 10b), and a vacuum sensor (14) which detects the work being sucked is provided to the vacuum supply system (16a). Then the parts other than the exposed area of the work (W) are sucked through the 2nd hole group (13b) to prevent a wrinkle in the peripheral part of the exposed area of the work (W), and the exposed area of the work (W) is sucked without causing a leak.
Patent TW-I237365-B (TW)
Title: A heat-spreader mounter applied for IC assembly
Inventor: YANG JUNG-CHI
IPC: H01L23/36
Filed: 2004-12-14
Granted: 2005-08-01
Abstract: A heat-spreader mounter for IC assembly includes a pick and put head to picks/puts a heat-spreader and a board supporter located under the pick and put head to support a board. Whenever the pick and put head picks a heat-spreader to put on a board supported by the board supporter, tips of the board supporter can limit the height of the pick and put head moves near closely to the board. And when the pick and put head moves and touches the tips, a connecting neck of the pick and put head deforms to make a nozzle of the pick and put head tilt to keep the picking heat-spreader being parallel to the board mounts on the board.
Patent TW-I257169-B (TW)
Title: Programmable and erasable digital switch device and manufacturing method and operating method thereof
Inventor: YANG CHING-SUNG
IPC: H01L27/105
Filed: 2005-04-19
Granted: 2006-06-21
Abstract: A programmable and erasable digital switch device is provided. An N type channel memory transistor and a P type channel memory transistor are formed on a substrate. The N type channel memory transistor includes a first N type doped region, a second N type doped region, a first charge storage layer and a first control gate. The P type channel memory transistor includes a first P type doped region, a second P type doped region, a second charge storage layer and a second control gate. A common bit line doped region is formed between the N type channel memory transistor and the P type channel memory transistor and electrically connects the first N type region and the second P type doped region. A word line electrically connects the first control gate and the second control gate.
Patent TW-I287961-B (TW)
Title: Housing of projection apparatus
Inventor: WANG CHENG
IPC: H05K5/04
Filed: 2005-05-27
Granted: 2007-10-01
Abstract: A housing of projection apparatus comprising an outer casing and a heat conductive element for accommodating a heat source is provided. The outer casing has an inner surface for accommodating the heat source. The heat conductive element is disposed on the inner surface between the outer casing and the heat source such that an isolated chamber between the heat conductive element and the outer casing is formed. Thus, the isolated chamber can prevent the outer casing from heating by the heat source directly to achieve better isolated effect.
Patent TW-I278120-B (TW)
Title: Flat-panel display photosensing apparatus and system
Inventor: CHOU SHEN-HONG
IPC: H01L31/00
Filed: 2005-09-05
Granted: 2007-04-01
Abstract: A display photosensing apparatus and/or system for precision sensing of emitted light including a reflector unit configured to have at least one first hole, and a first photosensitive element disposed behind the reflector unit for receiving a light passing through the at least one first hole, can increase the sensitivity and control of the light detected and emitted from a light guide source.
Patent TW-I408018-B (TW)
Title: Process for the production of valve metal powders
Inventor: HAAS HELMUT
IPC: B22F9/18
Filed: 2005-10-07
Granted: 2013-09-11
Abstract: For the production of valve metal powders they are deoxidized using reducing metals under an inert carrier gas. Deoxidation is performed with liquid reducing metals/metal hydrides without contact with the valve metal powders. The deoxidizing apparatus has a reactor (1) with two reactor chambers linked by a channel (6). One reactor chamber (2) contains a crucible (4) for the primary powder and the other reactor chamber (3) has a crucible (5) for the reducing metal/metal hydride to be evaporated, and it has an inert gas feed (10) of helium, neon or argon. Separate heating units (7-9) set the required temperatures (T1-T3).
Patent TW-I283926-B (TW)
Title: Semiconductor device
Inventor: SHIMIZU KAZUHIRO
IPC: H01L21/8234
Filed: 2004-11-30
Granted: 2007-07-11
Abstract: A technique is provided which allows easy achievement of a semiconductor device with desired breakdown voltage. In a high-potential island region (201) defined by a p impurity region (3), an n+ impurity region (52) is formed in an n- semiconductor layer (2), and first field plates (55a-55e) and second field plates are formed in multiple layers above the n- semiconductor layer (2) between the n+ impurity region (52) and the p impurity region (3). The second field plates in the upper layer are located above spaces between the first field plates in the lower layer, over which an interconnect line (30) passes. One of the second field plates which is closest to the p impurity region (3) has a cut portion under the interconnect line (30), and an electrode (56) is spaced between the first field plates located under the cut portion.
Patent TW-I413401-B (TW)
Inventor: MIZUNO SEIICHIRO
IPC: H01L27/146
Filed: 2007-03-01
Granted: 2013-10-21
Abstract: <P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of attaining both high-speed imaging and higher sensitivity.  <P>SOLUTION: The solid-state imaging apparatus 1 includes: N pixel sections 10<SB>1</SB>to 10<SB>N</SB>; transimpedance circuits 20a, 20b; integral circuits 30a, 30b; and a differential arithmetic circuit 40. Each pixel section 10<SB>n</SB>(1≤n≤N) includes: a photoelectric conversion circuit including a photodiode; and first and second hold circuits for holding an output voltage of the photoelectric conversion circuit. The voltage held by the first hold circuit of each pixel section 10<SB>n</SB>is received by the differential arithmetic circuit 40 via a common wire line 50a, the transimpedance circuit 20a, and the integral circuit 30a. Further, the voltage held by the second hold circuit of each pixel section 10<SB>n</SB>is received by the differential arithmetic circuit 40 via the common wire line 50a, the transimpedance circuit 20b, and the integral circuit 30b. The differential arithmetic circuit 40 outputs a voltage depending on a difference between the voltages outputted from the integral circuits 30a, 30 respectively.  <P>COPYRIGHT: (C)2007,JPO&INPIT
Patent TW-I409307-B (TW)
Title: Thermosetting resin composition for overcoat
Inventor: MOON BONG-SEOK
IPC: C09D179/04
Filed: 2008-01-18
Granted: 2013-09-21
Abstract: A thermosetting over-coat resin composition is provided to improve heat resistance, transparency, a yield of residual film, a planarization rate, and adhesion while retaining excellent storage stability. A thermosetting over-coat resin composition includes 3-50wt% of a binder resin represented by the following formula 1 or formula 2, 0-15wt% of a latent hardener, 0.01-15wt% of a silicone-based compound, and 20-96.99wt% of an organic solvent. The binder has an average molecular weight of 2,000-300,000 and the degree of dispersion of 1.0-10.0. The over-coat resin composition further comprises a solvent so as to provide a viscosity of 2-60 cps.
Patent TW-I408751-B (TW)
Title: A transistor with embedded silicon/germanium material on a strained semiconductor on insulator substrate
Inventor: WEI ANDY
IPC: H01L29/161
Filed: 2008-01-30
Granted: 2013-09-11
Abstract: By combining a respectively adapted lattice mismatch between a first semiconductor material in a channel region and an embedded second semiconductor material in an source/drain region of a transistor, the strain transfer into the channel region is increased. According to one embodiment of the invention, the lattice mismatch may be adapted by a biaxial strain in the first semiconductor material. According to one embodiment, the lattice mismatch may be adjusted by a biaxial strain in the first semiconductor material. In particular, the strain transfer of strain sources including the embedded second semiconductor material as well as a strained overlayer is increased. According to one illustrative embodiment, regions of different biaxial strain may be provided for different transistor types.
Patent TW-I397152-B (TW)
Title: Rram with improved resistance transformation characteristic and the method of making the same
Inventor: HSIEH CHUN I
IPC: H01L21/8239
Filed: 2008-09-25
Granted: 2013-05-21
Abstract: A method for fabricating an RRAM is provided. First, a bottom electrode is formed. A resistive layer is formed on the bottom electrode. A top electrode is then formed on the resistive layer, wherein the top electrode is selected from the group consisting of indium tin oxide (ITO) and indium zinc oxide (IZO). Finally, the top electrode is irradiated with UV light.
Patent TW-I413812-B (TW)
Inventor: YONEZAWA HIDEYUKI
IPC: G02B5/30
Filed: 2008-12-19
Granted: 2013-11-01
Abstract: Disclosed herein is a depolarizing film which is excellent in productivity and can have a large area. The depolarizing film is obtained by using birefringent very short fibers instead of inorganic birefringent crystals, such as calcite, for use in conventional depolarizing elements.
Patent TW-I494703-B (TW)
Title: Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
Inventor: SOER WOUTER ANTHON
IPC: G03B27/72
Filed: 2009-02-16
Granted: 2015-08-01
Abstract: An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength.