baber/WOPTO huggingface dataset:
Patent TW-535349-B (TW)
Title: Uninterrupted power supply device
Inventor: BAI FU-SHENG
IPC: H02M7/155
Filed: 2001-03-16
Granted: 2003-06-01
Abstract: The present invention is an uninterrupted power supply device for providing a stable output voltage. The uninterrupted power supply device includes a first input terminal, a first output terminal, an input switch device, a power storage device, an electricity converter, and a transformer. The first input terminal is connected to a utility power. The first output terminal provides the stable output voltage. The input switch device is electrically connected to the first input terminal and the utility. The power storage device is used to store power. The electricity converter is electrically connected to the first input terminal. When the voltage of the utility power is normal, the power of the utility power is stored in the power storage device. When the utility power is abnormal, the power of the power storage device is converted and outputted. The transformer includes a primary coil electrically connected to an output terminal of the electricity converter, and a secondary coil having a first terminal electrically connected to the first output terminal for use as a variable voltage source to provide a voltage for stabilizing the output voltage of the interrupted power supply device when the utility power is abnormal. The object of the present invention is to reduce the electrical rated value of transformer used by the interrupted power supply device, so as to further achieve the purpose of increasing overall power density.
Patent TW-591889-B (TW)
Title: Power amplifier for mobile communication device
Inventor: CHEN SHEN-WHAN
IPC: H03F3/20
Filed: 2001-03-29
Granted: 2004-06-11
Abstract: The present invention provides a power amplifier for mobile communication device, which includes an input circuit for inputting power signal; and output circuit for outputting amplified power signal; plural amplification units for amplifying power signals transmitted from the input circuit; and a resistor device for attenuating the power signal fed back from the output circuit to the input signal.
Patent TW-506921-B (TW)
Title: Auxiliary getting-on/off device for platform and method of installing the device
Inventor: KIKUZAWA KO
IPC: B61B1/02
Filed: 2001-05-29
Granted: 2002-10-21
Abstract: The present invention provides a platform and its installing method, which has a simple structure for reducing costs, shortening the time required for performing forward and backward movement of an auxiliary getting-on/off member, installable irrespective of the presence or absence of an installation space under the platform, and being adopted for the platforms of any arrival and departure states. The solution of the present invention is that a drive mechanism 30 is formed in such a simple structure that a cam follower member 302 rolls relatively on a cam member 301 whereby the auxiliary getting-on/off member 21 is formed such that a series of operations are performed, and fitted in a storage part 15 provided by recessing the upper surface 14 of the platform 10 at an edge 13 to install the auxiliary getting-on/off device 20. The storage part 15 is covered with a ceiling member 50 from the topside.
Patent TW-507276-B (TW)
Title: Precursors for incorporating nitrogen into a dielectric layer
Inventor: ALLURI PRASAD V
IPC: C07F5/00
Filed: 2001-07-31
Granted: 2002-10-21
Abstract: A metal-organic precursor suitable for use in a chemical vapor deposition formation of dielectric layer (14, 52) is disclosed. The precursor comprises a moiety that includes a first metal atom (202), an oxygen atom, and a nitrogen atom. The oxygen atom is chemically bonded to the metal atom and to the nitrogen atom. The first metal atom (202) may be a group III, group IV, or group V transition metals such as yttrium, lanthanum, titanium, zirconium, hafnium, niobium, and tantalum or another metal such as aluminum. The precursor may include one or more alkoxy groups (208) bonded to the first metal atom (202). The precursor may be characterized as a M(OCR3)x-y-z(ONR2)y(OSiR3)z molecule where Y is an integer from 1 to (X-1), Z is an integer from 0 to X-1, X is an integer from 3 to 5 depending upon the valency of M and (Y+Z) is less than or equal to X. In one embodiment the precursor further includes one or more siloxy (212) or alkyl siloxy (212) groups bonded to the first metal atom (202). The precursor is suitable for chemical vapor deposition process used to deposit a dielectric layer (14, 52) on a semiconductor substrate (10). In this embodiment, the dielectric layer (14, 52) may be intended as a gate dielectric layer (14) or a capacitor dielectric layer (52).
Patent TW-564296-B (TW)
Title: Device for closing a chain, particularly a bicycle chain
Inventor: MEGGIOLAN MARIO
IPC: F16G13/06
Filed: 2001-08-27
Granted: 2003-12-01
Abstract: Device for closing a chain, particularly a bicycle chain, comprising a first and a second pair of outer plates (32, 34) reciprocally connected by at least one pair of inner plates (40), the device comprising one pair of rivets (48) so engaging a pair of end holes (36) of the first and the second pair of outer plates (32, 34) and the corresponding holes (24) of a pair of inner plates (18) arranged at the ends (10, 12) of the chain.
Patent TW-507243-B (TW)
Title: CRT having a deflection unit with anti-ringing characteristics
Inventor: HARBERTS DIRK WILLEM
IPC: H01J29/76
Filed: 2001-08-31
Granted: 2002-10-21
Abstract: A cathode ray tube (1) having an improved deflection unit (11) is described. The deflection unit (11) comprises line and/or frame coils that comprise a composition of wires having a conductive coating and wires having a non-conductive coating. Such deflection units have a good anti-ringing performance, while the good adhesion characteristics of non-conducting coated wires are maintained.
Patent TW-495623-B (TW)
Title: Method of producing color filter
Inventor: YONEHARA HISATOMO
IPC: B41J2/01
Filed: 2001-09-25
Granted: 2002-07-21
Abstract: The present invention provides a method of producing a color filter which has pixels formed by an ink-jet printing method and also has superior heat resistance and solvent resistance, especially heat resistance. This method comprises forming pixels on a transparent substrate using a colored composition containing (a) an amino resin having a carboxyl group and/or a phenolic hydroxyl group and (b) a coloring material by an ink-jet printing method, followed by curing the pixels.
Patent TW-516197-B (TW)
Title: Heat sink structure of semiconductor package
Inventor: SHIU JR-SHING
IPC: H01L23/28
Filed: 2001-10-12
Granted: 2003-01-01
Abstract: A heat sink structure of semiconductor package consists of: (a) a substrate whose upper surface is installed with a top conductive wire layer and a top heat conduction layer, and whose lower surface is installed with a plural number of tin balls; (b) a chip is put on top of the heat conduction layer and is electrically connected to the top conductive wire layer, where the top conductive wire layer connects the tin balls via a plural number of through holes and the heat conduction layer connects the tin balls via at least a heat sink bump.
Patent TW-589420-B (TW)
Title: A process for the spinning and spooling of polyester filaments, polyester filaments which can be obtained by means of the spinning process, the stretch texturing of the polyester filaments, as well as bulky polyester filaments which can be obtained ...
Inventor: WANDEL DIETMAR
IPC: D01F6/92
Filed: 2001-10-26
Granted: 2004-06-01
Abstract: The present invention relates to a process for the production and for the spooling of preoriented polyester filaments which consist of at least 90 weight %, in relation to the total weight of the polyester filament, of polybutylene terephthalate (PBT) and/or polytrimethylene terephthalate (PTMT), preferably of PTMT, characterized in that: (a) the spinning delay is set in the range of 70 to 500; (b) the filaments, immediately after exiting from the spinning nozzle, pass through a cooling delay zone from 30 mm to 200 mm in length; (c) the filaments are cooled off to below the solidification temperature; (d) the filaments are bundled at a distance of between 500 mm and 2500 mm from the lower side of the nozzle; (e) the tension of the thread in front of and behind the removal galettes is set to between 0.05 cN/dtex to 0.20 cN/dtex; (f) the thread is spooled with a tension of the thread of between 0.025 cN/dtex to 0.15 cN/dtex; (g) the spooling speed is adjusted to between 2200 m/min and 3500 m/min.
Patent TW-523413-B (TW)
Title: Water level controlling pipette using liquid differential pressure gravity control
Inventor: FAN FA-RUNG
IPC: A61L2/24
Filed: 2001-11-09
Granted: 2003-03-11
Abstract: The present invention relates to a water level controlling pipette using a principle of liquid differential pressure gravity control, particularly a pipette using the principle of liquid differential pressure gravity control to control a quantitative discharge of liquid, which mainly uses a body assembled from a pipette body and a liquid bottle to be placed in a water tank. The liquid in the pipette can be quantitatively discharged by controlling the timing sequence of the flushing water and the variation of the water level in the water tank in order to achieve the effect of cleaning, perfuming and sterilization.
Patent TW-I240078-B (TW)
Title: Circuit for measuring capacitance and measuring method using the same
Inventor: SHIE TZUNG-SHIUAN
IPC: G01R27/26
Filed: 2001-11-09
Granted: 2005-09-21
Abstract: The present invention provides a circuit structure for measuring capacitance, wherein the capacitive loading is coupled between the first node and the second node; the drains of the first PMOS transistor and the first NMOS transistor are coupled to the first node; the drains of the second PMOS transistor and the second NMOS transistor are coupled to the second node, and the pad is coupled to the second node; the sources of the first and second PMOS transistors and the sources of the first and second NMOS transistors are biased at VDD and grounding voltage; and, the gates of the first and second transistors, and the first and second NMOS transistors are simultaneously applied with a non-synchronized voltage; by grounding and floating the pad to obtain the current flowing the capacitive loading, and thus obtain the capacitance of capacitive loading.
Patent TW-540108-B (TW)
Title: MOS-gated power device with doped polysilicon body and process for forming same
Inventor: KOCON CHRISTOPHER B
IPC: H01L29/78
Filed: 2001-12-04
Granted: 2003-07-01
Abstract: An improved MOS-gated power device comprises a substrate having an upper layer of doped monocrystalline silicon of a first conduction type that includes a doped well region of a second conduction type. The substrate further comprises at least one heavily doped source region of the first conduction type disposed in the well region at an upper surface of the upper layer, a gate region comprising a conductive material electrically insulated from the source region by a dielectric material, a patterned interlevel dielectric layer on the upper surface overlying the gate and source region, and a heavily doped drain region of the first conduction type. The improvement comprises: body regions comprising heavily doped polysilicon of the second conduction type disposed in the well region at the upper surface of the monocrystalline silicon substrate. A process for forming an improved MOS-gated power device comprises: providing a substrate having an upper layer of doped monocrystalline silicon of a first conduction type that includes a doped well region of a second conduction type. The substrate further comprises a heavily doped source regions of the first conduction type disposed in the well region at an upper surface of the upper layer, a gate region comprising a conductive material electrically insulated from the source region by a dielectric material, heavily doped drain region of the first conduction type, a patterned interlevel dielectric layer on the upper surface overlying the gate and source regions. The process further comprises: forming a body mask on the substrate, and selectively removing portions of the source region and underlying well region remotely disposed from the gate region, thereby forming at least one body hollow in the substrate; removing the body mask, and forming a blanket layer of heavily doped polysilicon of the second conduction type that overlies the substrate and interlevel dielectric layer and fills the body hollow; selectively removing portions of the polysilicon blanket layer from the source region and interlevel dielectric layer, leaving heavily doped polysilicon filling the body hollow and thereby forming a body region; depositing over the upper surface and interlevel dielectric layer a source metal layer in electrical contact with the source and body regions; and forming a drain metal layer in contact with the drain region in the substrate.
Patent TW-I237729-B (TW)
Title: Energy recycling device for liquid crystal display device
Inventor: HUNG KUN-CHENG
IPC: G09G3/36
Filed: 2001-12-24
Granted: 2005-08-11
Abstract: There is provided an energy recycling device for liquid crystal display device. The display panel has two pixels, each having a capacitor. Each of the two capacitors has a voltage. The voltage polarities of the two capacitors are varied according to the time and opposite to each other. The energy recycling device includes: two switches and an energy converting device, wherein the two switches respectively control the two capacitors to couple to the energy recycling device, and the energy converting device outputs converted energy based on the voltages of the two capacitors. The energy recycling device recycles the energy consumed in switching the polarities of the two pixels by controlling the two switches, and the recycled energy is used to drive the load devices.
Patent TW-536725-B (TW)
Title: Impregnated cathode structure and its manufacturing method
Inventor: IMABAYASHI DAICHI
IPC: H01J1/28
Filed: 2001-12-26
Granted: 2003-06-11
Abstract: The present invention provides an impregnated cathode structure and its manufacturing method capable of joining a porous base metal with a cup-shaped member strongly without interposing anything, allowing elimination of poor welds, and enhancing the reliability and yield of the welds generated between the porous base metal and cup-shaped member. The impregnated cathode structure is composed of the porous base metal 11 impregnated with an electron emitting substance and the cup-shaped member 12 to hold the metal 11 in such a way as covering its bottom, surface and side faces while the obverse surface is left exposed. In the structure, a dense part 14 not porous is formed on the bottom surface of the metal 11, and the bottom of the cup-shaped member 12 is deformed by pressure as tracing the shape of the dense part 14 so that a tight attaching region 16 is formed, and by this tight attaching region 16, the bottom of the cup-shaped member 12 is welded to the dense part 14 of the metal 11.
Patent TW-I239210-B (TW)
Title: A contrast focus figure-of-merit method that is insensitive to scene illumination level
Inventor: BAER RICHARD L
IPC: H04N5/232
Filed: 2002-03-06
Granted: 2005-09-01
Abstract: A method, system and program product for providing automatic focus adjustment for an image device, comprising the steps of: differentiating an image along some axis to obtain a difference image; computing a variance of the difference image; determining a noise contribution to the variance; subtracting the noise contribution from the variance; using the adjusted noise variance as a factor in making the automatic focus adjustment. In a preferred embodiment, the variance is normalized, and the noise contribution is determined by determining the shot noise and the read noise.
Patent TW-558795-B (TW)
Title: Method of forming an isolation layer and method of manufacturing a trench capacitor
Inventor: HAENSEL JANA
IPC: H01L21/76
Filed: 2002-07-08
Granted: 2003-10-21
Abstract: 20010117854
Patent TW-571499-B (TW)
Title: Electroplating power supply apparatus
Inventor: ARAI TORU
IPC: C25D21/00
Filed: 2002-08-15
Granted: 2004-01-11
Abstract: A power supply apparatus for use in electroplating includes an input-side rectifier (32). A rectifier output is converted into high-frequency signals in inverters (38a, 38b), which are transformed in transformers (48a, 48b). When the transformed high-frequency signals from the transformers are of positive polarity, they are rectified by a diode (50a or 50b) to cause a positive current to be supplied to a load (60). When the transformed high-frequency signals are of negative polarity, they are rectified by a diode (50c or 50d) to thereby cause a negative current to flow through the load. A first IGBT (54a) is connected in series with each of the diodes (50a, 50b) and is rendered conductive and nonconductive at a frequency lower than the high-frequency signal. Also, a second IGBT (54b) is connected in series with each of the diodes (50c and 50d) and is rendered nonconductive when the IGBT and nonconductive at the lower frequency. When the first IGBT is rendered conductive, the second IGBT is rendered nonconductive, and vice versa. The inverters (38a, 38b) are controlled in synchronization with the firs t and second IGBTs (54a, 54b) in such a manner that the high-frequency signal can have a larger magnitude when the second IGBT (54b) is conductive than when the first IGBT (54a) is conductive.
Patent TW-I278012-B (TW)
Title: Pattern forming material and method of pattern formation
Inventor: KISHIMURA SHINJI
IPC: G03F7/004
Filed: 2002-08-27
Granted: 2007-04-01
Abstract: This invention is to irradiate resist film with exposing light of a wavelength not longer than a 180 nm band for pattern exposure, without yielding residues in forming a resist pattern with better pattern shape. A pattern formation material of this invention contains a base polymer including a first unit represented by chemical formula 1 and a second unit represented by chemical formula 2 and, and an acid generator, wherein R1 and R3 are the same or different and are a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R2 is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R4 is a protecting group released by an acid; m is an integer of 0 through 5; and a and b satisfy 0 < a < 1, 0 < b < 1 and 0 < a+b <= 1.
Patent TW-574049-B (TW)
Title: Three wheeled wireless controlled toy stunt vehicle
Inventor: LYNDERS MICHAEL JOHN
IPC: A63H17/00
Filed: 2002-10-24
Granted: 2004-02-01
Abstract: A three wheeled wireless controlled toy stunt vehicle (10) capable of both highly elastic impact and less elastic impact with obstacles struck while the vehicle (10) is in motion is disclosed. Two wheels (18) are separately driven, and have tires (90) with interiors that are vented to atmosphere. The third wheel (20) has a tire (78) with an interior that is sealed and pressurized. The pressurized tire (78) is capable of highly elastic impact when it strikes obstacles while the toy vehicle (10) is in motion. The non-pressurized tires (18) are characterized by a less elastic impact with obstacles. The third wheel (20) has a diameter that is larger than a diameter of the drive wheels (18). All components of the vehicle (10) are contained within the two planes tangent to the three wheels, such that the toy vehicle (10) may be operated on either of its two major sides (14, 16).
Patent TW-578368-B (TW)
Title: A concurrent multi-band electronic circuit
Inventor: LU SHEY-SHI
IPC: H03F3/195
Filed: 2002-12-19
Granted: 2004-03-01
Abstract: This invention is related to a concurrent multi-band electronic circuit and its design methodology. A capacitor is connected between the collector (drain) and base (gate) of a bipolar (field effect) transistor. Because of the addition of this capacitor, the impedance looking into the base (gate) of the bipolar (field effect) transistor resonates with an inductor connected to the base (gate) at the frequency between the maximum and minimum application frequency bands. Compared with the prior art, our invention does not need off-chip inductor/capacitor or additional wire bonding, which is helpful to the enhancement of the yield and throughput and the reduction of cost.
Patent TW-I239595-B (TW)
Title: Manufacturing method of semiconductor wafer
Inventor: SEKIYA KAZUMA
IPC: H01L21/78
Filed: 2002-12-20
Granted: 2005-09-11
Abstract: The subject of the invention is to fabricate a semiconductor wafer with sufficiently increased breaking strength, having no cut oblique layer, or having no cut bits and small pieces. For the semiconductor wafer W where plural circuits on the surface are divided by the dicing channels to form the individual semiconductor chip of each circuit, the surface side of the semiconductor wafer W is made to have the cutting remained portion 20. After forming the cut trench 19a on the backside of dicing channel without reaching the surface, by performing an etching process onto the backside to etch the cut trench side face and the cutting remained portion 20, each semiconductor chip is divided and formed so as to remove the cut oblique layer and cut bits and small pieces generated due to the cutting process.
Patent TW-I232613-B (TW)
Title: Planar dual L-type double-frequency antenna
Inventor: YE MING-HAU
IPC: H01Q13/22
Filed: 2003-01-20
Granted: 2005-05-11
Abstract: A kind of planar dual L-type double-frequency antenna is disclosed in the present invention. The antenna is manufactured through the following steps. On one side face of the dielectric substrate, a coplanar waveguiding wire or a microstrip is printed, and one of its ends is used as the signal-feeding terminal. On the same side face or the other side face of the dielectric substrate, a grounding metal face corresponding to the position of the coplanar waveguiding wire or the microstrip is printed such that a constant separation distance is maintained between the grounding metal face and the coplanar waveguiding wire or the microstrip. The other end of the coplanar waveguiding wire or the microstrip is extended toward the position excluding the grounding metal face, so as to extend from its longitudinal axial side to form one radiation body having a reversed L shape. The grounding metal face extends from the position near the radiation body having a reversed L shape toward the position excluding the grounding metal face to form the other radiation body having a reversed L shape. Both radiation bodies are extended along the corresponding direction or parallel direction; and a constant separation distance is maintained between them with the length approximately equal to one quarter wavelength of each frequency band of the double-frequency section such that each radiation body can respectively generate different frequency band signals.
Patent TW-I262505-B (TW)
Title: Partial page programming of multi level flash
Inventor: PARKER ALLAN
IPC: G11C16/02
Filed: 2003-02-11
Granted: 2006-09-21
Abstract: A method and apparatus for partial page programming of a multi level cell flash memory. In a multi level cell flash memory, new partial page programming information may be accessed (510). Information previously stored in the memory may be accessed (520). New and previous information may be combined in a page buffer of a flash device (530). Optionally, new and previous information may be combined in a memory external to the flash device (530). The combined information may be used to program the cells of a flash memory (540). A standard programming and verification method may be used to program the combined information into the cells of a flash memory (540). In this novel manner the benefits of partial page programming may be realized for multi level cell flash memory devices.