Patent SG-11201901887U-A (SG)
Title: Process for the generation of metal-containing films
Inventor: SCHWEINFURTH DAVID DOMINIQUE
IPC: C23C16/56
Filed: 2017-10-05
Abstract: RSi—A R 2 Ri) (la) R 3 Si—A A—SiR 3 (I b) R R 'Si A' 'A R 1) ( R 2 (IC) R R R 1) \ R 2 (Id) R 3 Si 2 A R (11a) R 3 Si—A R (lib) R R A' SL A (11c) R 3 Si R 3 A R 4 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 19 April 2018 (19.04.2018) WIP0 1 PCT o Ell to otiolo 01110111110 111110 ow (10) International Publication Number WO 2018/069130 Al (51) International Patent Classification: C23C 14/58 (2006.01) C23C 16/56 (2006.01) C23C 16/455 (2006.01) (21) International Application Number: PCT/EP2017/075304 (22) International Filing Date: 05 October 2017 (05.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16193697.6 13 October 2016 (13.10.2016) EP (71) Applicant: BASF SE [DE/DE]; Carl-Bosch-Strasse 38, 67056 Ludwigshafen am Rhein (DE). (72) Inventors: SCHWEINFURTH, David Dominique; Sude- tenstr. 17, 64319 Pfungstadt (DE). ABELS, Falko; Guten- bergstrasse 2a, 67354 Roemerberg (DE). MAYR, Lukas; Gontardstrasse 25, 68163 Mannheim (DE). LOEFFLER, Daniel; Heinrich Heine Str. 2b, 67134 Birkenheide (DE). WALDMANN, Daniel; Eulerweg 16a, 67245 Lambsheim (DE). (74) Agent: BASF IP ASSOCIATION; BASF SE, G-FLP - 0006, 67056 Ludwigshafen (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) (54) Title: PROCESS FOR THE GENERATION OF METAL-CONTAINING FILMS (57) : The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing com- pound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (la), (lb), (lc), (Id), (11a), (lib), (lie), or (lid) wherein A is 0 or NRN, R and R N is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, R 1 , R 2 , R 3 , and R is hydrogen, an alkyl group, an alkenyl group, an 4 aryl group, a silyl group, or an ester group, and E is nothing, oxygen, methylene, ethylene, or 1,3-propylene.