baber/WOPTO huggingface dataset:
Patent TW-382055-B (TW)
Title: Variable refrigerant, intrastage compression heat pump
Inventor: BIANCARDI FRANK R
IPC: F25B13/00
Filed: 1998-07-28
Granted: 2000-02-11
Abstract: A heat pump system, utilizing a multi-component refrigerant blend in which a low pressure component is zeotropic with respect to the remainder of the blend, separates the low pressure component by rectification to enhance heating capability in low ambient temperatures. Vapor is separated from liquid in the effluent of the condenser of a heat pump, at a pressure in equilibrium at a temperature midway between the evaporator and condenser effluent temperatures, the vapor being applied to an auxiliary inlet at a mid pressure point in the compression stroke of the compressor.
Patent TW-449637-B (TW)
Title: Folding stage
Inventor: WAGNER WALTER R
IPC: E04H3/28
Filed: 1998-07-31
Granted: 2001-08-11
Abstract: A folding stage includes a folding linkage with cross members at clear a center lock. The center lock has a handle below the cross members and off to the side of the cross members to prevent pinching of operators' hands and fingers. The folding linkage folds from a use position wherein stage decks are horizontal to form a stage surface to a storage position wherein the bottom of the stage decks oppose one another. In the fully folded position, stage support legs are angled inward slightly. Casters mount at an oblique angle to the telescoping legs and are moved closer to the telescoping legs to decrease the moment of inertia about the legs while maintaining sufficient contact with the floor. Torsion bars mount at the pivoting access of the frame and the telescoping legs to control folding speed. The folding portions of the frame and decks have a center of gravity which is aligned with the pivoting access to decrease the moment of inertia about the pivoting axis.
Patent TW-403865-B (TW)
Title: An adjustable measuring device for the main board input-voltage
Inventor: YAU YAN-YAU
IPC: G06F1/18
Filed: 1998-10-01
Granted: 2000-09-01
Abstract: The adjustable measuring device for the input-voltage main board includes : one hardware monitor IC and at least one selector.The hardware monitor IC has N measuring input terminal, and the selector is used to choose N (M>N) out of M measuring inputs to measure through the input terminal and the hardware monitor IC.
Patent TW-453013-B (TW)
Title: Position sensor
Inventor: ELY DAVID THOMAS ELIOT
IPC: G01D5/245
Filed: 1998-11-13
Granted: 2001-09-01
Abstract: A transducer is provided for use in a position sensor which senses the position of two relatively movable members. In one form, the transducer has a plurality of sensor windings having a number of loops arranged in succession and connected in series so that signals induced in adjacent loops by a common electromagnetic field oppose each other and an excitation winding having at least one loop superimposed on but electrically isolated from the loops of the sensor windings.
Patent TW-393570-B (TW)
Title: Method of computing the temperature in a radiation thermometer
Inventor: KRAUS BERNHARD
IPC: G01K13/00
Filed: 1998-12-15
Granted: 2000-06-11
Abstract: The invention is directed to a method of computing the radiation temperature of a body from the signals of a radiation and an ambient temperature sensor, and further to a radiation thermometer, in particular a clinical radiation thermometer. In the method of the present invention, computation of the temperature is not using the Stefan Boltzmann law, but rather, a polynomial is used, preferably a third-degree polynomial, which is adjusted to the radiation-optical properties of the thermometer in the relevant wavelength range. The reciprocal value of the sensitivity of the radiation sensor is preferably represented as a polynomial as well. In this manner, the computation of a fourth root or divisions which are otherwise customary are avoided, enabling the necessary computations to be also performed, for example, by a 4-bit microprocessor with great speed.
Patent TW-396072-B (TW)
Title: Method for manufacture of the ingot mold body and said ingot mold body
Inventor: RODE DIRK ING DR
IPC: C23C24/00
Filed: 1998-12-17
Granted: 2000-07-01
Abstract: An ingot mold body (1) made of a hardable copper alloy is provided with an inner wear protection layer (7) made of chromium, its hardness decreases from the surface (8) of the extruding side in the direction to the ingot mold body (1). The wear protection layer (7) consists of two chromium layers (9,10). Thus, the ingot mold body (1) is in solution annealed, chromium plated and afterwards hardened, whereby the chromium layer (9), which is very hard at the beginning, becomes soft. The hardness of the chromium layer (9) is about 650 HV. In order to increase the wear protection, then the second chromium layer (10) is coated. Therefore, it deals with a conventional hard chromium layer with a hardness between 850 and 1050 HV.
Patent TW-426789-B (TW)
Title: Circulation fan device and circulation fan driving motor
Inventor: SEKIGUCHI SHINICHI
IPC: F04D29/04
Filed: 1999-02-11
Granted: 2001-03-21
Abstract: To provide a circulation fan device, which enables maintenance free performance without contaminating process gas even when the circulation fan is under high speed rotation and high load states, and save installation space. A rotor of a circulation fan 2 is rotationally supported by a bearing, which circulation fan 2 is arranged in an airtight vessel, which corrosive process gas is housed and sealed inside. Such a circulation fan device adopts a control type magnetic bearing for supporting rotors 2-1, 2-2 of the circulation fan. Displacement sensor targets 4-1, 5-1, 6-1, 7-1 for radial magnetic bearings 4, 5 and axial magnetic bearings 6, 7 of the magnetic bearing, and rotor side magnetic poles 4-2, 5-2, 6-2, 7-2 are fixed to the rotors 2-1, 2-2 of the circulation fan 2, and arranged in a closed space communication with the airtight vessel. Displacement sensors 4-3, 5-3, 6-3, 7-3 opposed thereto and stator side magnetic poles 4-4, 5-4, 6-4, 7-4 are arranged outside the vessel across cans 14, 15, 17, 18.
Patent TW-498297-B (TW)
Title: Process and device for addressing plasma panels
Inventor: DOYEN DIDIER
IPC: G09G3/291
Filed: 1999-02-26
Granted: 2002-08-11
Abstract: The invention relates to a process for addressing cells of a plasma panel, characterized in that it consists in coding the grey levels NG1 and NQ2 relating to an item of information regarding the luminance of two cells situated in the same column and in two adjacent lines 1 and 1+1 as a first control word corresponding to a common value VC and as a second and third control word corresponding to specific values, VS1 and VS2, such that: NG1=VS1+VC; NG2=VS2+VC, in transmitting the bits of the first control word on the column inputs by simultaneously addressing the two lines 1 and 1+1 in respect of the selection of the corresponding cells. The applications relate to the displaying of digital video signals on plasma panels.
Patent TW-476788-B (TW)
Title: A cleanser and the making process thereof
Inventor: STROUT KELLY MICHAEL
IPC: C11D17/08
Filed: 1999-04-02
Granted: 2002-02-21
Abstract: The present invention may include a cleanser having a liposome and greater than about 40 weight percent of a solvent. The liposome may be loaded with the solvent more than about 7 days after the manufacture of the liposome. The solvent may be an isoprenoid or ester solvent. Furthermore, the solvent may be d-limonene or a dibasic ester. In addition, the liposome may be selected from the group consisting of large unilamellar vesicles, multilamellar vesicles, paucilamellar vesicles, and small unilamellar vesicles. Desirably, the liposome is a paucilamellar vesicles. Desirably, the cleanser may have a solvent weight percent greater than about 60. More desirably, the cleanser may have a weight percent of solvent greater than about 80. Moreover, the solvent is about a 1:1 weight ratio of d-limonene and dibasic ester.
Patent TW-483067-B (TW)
Title: Method and apparatus for modifying the profile of high-aspect-ratio gaps using differential plasma power
Inventor: NARWANKAR PRAVIN
IPC: H01L21/316
Filed: 1999-04-07
Granted: 2002-04-11
Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.
Patent TW-459455-B (TW)
Title: Bandwidth control system and method for individual subscriber of broadband network data transmission
Inventor: CHEN JIUN-LIANG
IPC: H04L29/00
Filed: 1999-05-20
Granted: 2001-10-11
Abstract: The invention relates to a method and system used in broadband network to process individual subscriber's data transmission by means of leased line. The method is to build up a personal buffer area for each subscriber and dynamically changes the storage capacity of the personal buffer area of each subscriber in accordance with the controlled count of subscribers and the requested bandwidth demand, ensuring the output bandwidth requested by the subscriber.
Patent TW-522066-B (TW)
Title: Sawing apparatus and saw fence system
Inventor: MILLER DAVID GEORCE
IPC: B27B27/02
Filed: 1999-05-31
Granted: 2003-03-01
Abstract: A sawing apparatus and a saw fence. The saw apparatus may include a work surface. The saw may include a rail system disposed along the edges of the work surface, for the attachment of accessories thereto. The saw may be provided with workpiece guide adapted to be attached to the rail system for guiding workpieces during the operation of the saw. The workpiece guide may also be provided with an infeed extension that rides on the rail system and is capable of supporting workpieces during the operation of the saw. The infeed extension may be adjustable relative to the work surface of the saw. The saw may further be provided with a debris collection system for the collection of debris produced by the cutting operations of the saw.
Patent TW-466491-B (TW)
Title: Dynamic semiconductor-memory device and method to initialize a dynamic semiconductor-memory device
Inventor: BUCK MARTIN
IPC: G11C7/10
Filed: 1999-06-09
Granted: 2001-12-01
Abstract: This invention relates to a dynamic semiconductor-memory device of random access-type (DRAM/SDRAM) with an initialization-circuit which can control the switch-on process of the semiconductor-memory device and its circuit-components, said initialization-circuit supplies a power-supply-voltage-stable signal (POWERON) after the stability of the power-supply voltage which occurs after the switch-on of the semiconductor-memory device. Said initialization-circuit has a pre-detection-circuit (RCV2), which picks up a pre-specified level-stable of a clock-control-signal (CKE) applied from outside in time before the power-supply-voltage-stable signal (POWERON) and as a reaction hereon supplies a first release-signal to start the control-circuit (6) which is provided for the ordinary operation of the semiconductor-memory device.
Patent TW-426857-B (TW)
Title: Semiconductor integrated circuit memory
Inventor: FUJIOKA SHINYA
IPC: G11C7/10
Filed: 1999-06-29
Granted: 2001-03-21
Abstract: A semiconductor memory includes memory cell blocks, a burst-length information generating circuit which generates burst-length information based on a burst length, and a block enable circuit which receives the burst-length information. The block enable circuit selectively enables one of the memory cell blocks when the burst length is equal to or shorter than a predetermined burst length and selectively enables a plurality of memory cell blocks based on the burst length when the burst length is longer than the predetermined burst length. Data are read from the above-mentioned one or plurality of memory cell blocks.
Patent TW-513673-B (TW)
Title: A portable device with a dual operation, a communication system, a communication method, a terminal apparatus, and a computer-readable recording medium storing a program
Inventor: AZUMA MASAMICHI
IPC: G06K5/00
Filed: 1999-07-30
Granted: 2002-12-11
Abstract: An integrated device provided on an IC card 1 includes (1) a nonvolatile memory 12 that is accessed using electrical power supplied from an antenna of a terminal apparatus and (2) an encryption circuit 10 that performs two-way authentication by arbitrating with the terminal apparatus, these two components operating when the IC card is placed within a given reception range of electromagnetic waves transmitted by the terminal device. The integrated device also includes (3) a nonvolatile memory 13 that is accessed using electrical power supplied from an antenna of a terminal device and (4) an encryption circuit 11 that performs two-way authentication by arbitrating with the terminal apparatus, these two components operating only when the portable device is placed very near an antenna and electrical power is supplied at a higher level. Personal information that needs to be securely protected is stored in the nonvolatile memory 13. This information is securely protected by performing two-way authentication using the encryption circuit 11 before allowing access to the nonvolatile memory 13.
Patent TW-I241297-B (TW)
Title: Improved catalysts for the hydrogenation of maleic acid to 1,4-butanediol
Inventor: BUDGE JOHN R
IPC: C07D307/02
Filed: 1999-08-17
Granted: 2005-10-11
Abstract: An improved catalyst for the hydrogenation of maleic acid, maleic anhydride or other hydrogenatable precursor are catalytically hydrogenated to 1,4-butanediol and tetrahydrofuran has been discovered. This hydrogenation catalyst comprises palladium, silver, rhenium and at least one of iron, aluminum, cobalt and mixtures thereof, all on a carbon support.
Patent TW-466603-B (TW)
Title: Semiconductor device and manufacturing method thereof
Inventor: ADAN ALBERTO OSCAR
IPC: H01L21/822
Filed: 1999-08-18
Granted: 2001-12-01
Abstract: A semiconductor device includes a capacitor and an interconnect layer disposed on a semiconductor substrate. The capacitor is formed of a bottom electrode, a capacitor dielectric film and a top electrode. The interconnect layer is formed of a first interconnect layer and a second interconnect layer laminated on the first interconnect layer. The bottom electrode and the first interconnect layer are formed of a first metal layer. The top electrode and the second interconnect layer are formed of a second metal layer. The capacitor dielectric film is formed only on the bottom electrode.
Patent TW-460731-B (TW)
Title: Electrode structure and production method of wide viewing angle LCD
Inventor: TAI YA-HSIANG
IPC: G09F9/00
Filed: 1999-09-03
Granted: 2001-10-21
Abstract: The invention provides an electrode structure and production method of wide viewing angle LCD. The electrode structure provides an individually independent pixel structure and a wholly connected common electrode structure. The upper layer common electrode in a form of plural band structures and the lower layer pixel electrode in a form of panel structure are generated on a substrate. The upper layer common electrode structure is constructed on top of the indium-tin-oxide (ITO) and the pixel electrode and common electrode can stride across data signal lines to increase the effective transmission of light, thereby making the transparent area of LCD expand. When producing the electrode package in the invention, the substrate made by the existing model can be utilized. After every pixel electrode is taken as a panel electrode and is covered with a layer partition insulation layer, the grate ITO is used to make the structure of the connected common electrode. The electrode structure and production method of the invention have more tolerance of line cut and residual electric charge and are easier for reengineering process because the ITO is formed in the last section of the post-production.
Patent TW-518233-B (TW)
Title: Composition for use as cosmetics
Inventor: NISHIDA MIHARU
IPC: A61K8/00
Filed: 1999-09-18
Granted: 2003-01-21
Abstract: A compositions for external use comprising succinog1ucan and a water-swelling clay mineral, which is useful particularly as cosmetics. The composition can give a novel feeling upon use which satisfies the diversified requirements by consumers and is excellent in long-term stability.
Patent TW-562710-B (TW)
Title: Color inkjet film for advertisement panel box
Inventor: LIN TING-JIUN
IPC: B05D5/00
Filed: 1999-10-18
Granted: 2003-11-21
Abstract: This invention provides a color inkjet film for advertisement panel box, particularly to one using color ink of water-base ink or dye without the need of lamination while featuring the film with water-resistant, water-tolerant and light-pervious features. A layer of light-pervious cross-linking agent is applied to a side of the film substrate. A medium layer composed of silicide, calcium carbonate, PVA and water-base acrylic resin. This invention may be adapted to color-ink applications in various inkjet printers and various water-base ink or dye, to feature the film with colorful exhibition patterns and water-resistant, water-tolerant and light-pervious features. This invention makes breakthrough to the conventional inkjet color films that uses water-base ink and needs to be further laminated.
Patent TW-440859-B (TW)
Title: IC test software system for mapping logical functional test data of logic integrated circuits to physical representation
Inventor: SMITH SHAWN
IPC: G01R31/317
Filed: 2000-05-05
Granted: 2001-06-16
Abstract: The present invention, generally speaking, takes advantage of the foregoing capability to determine and display the X, Y location corresponding to a net name, by translating functional test data of a digital logic chip passed through a simulation model which identifies one or more defective nets of the chip. The defective nets are processed against a database of the foregoing type to obtain X, Y coordinate data for these nets, allowing them to be data logged as physical traces on the chip layout. In accordance with an exemplary embodiment, this mapping is performed by taking the output from a functional tester and translating it from a list of failed scan chains into a list of suspected netlist nodes. The X, Y coordinates of suspected netlist nodes are then identified and stored in a database, providing failure analysis and yield enhancement engineers a starting point for performing failure analysis and for immediately understanding whether in-line inspection data can account for a given failure. These nodes may then be crossmapped from the circuit design onto the chipAEs layout for each of multiple photomask layers within the design. Detailed failure data is gathered and stored at the wafer stage as part of a comprehensive program rather than on an as-needed basis at the packaged part stage. A voluminous amount of high-quality data is therefore obtained in an entirely automated fashion, as opposed to obtaining a comparatively minuscule amount of lesser-quality data in an exceedingly laborious fashion.
Patent TW-447200-B (TW)
Title: Combined hybrid automatic retransmission request scheme
Inventor: FURUSKAER ANDERS
IPC: H04W28/04
Filed: 1999-11-11
Granted: 2001-07-21
Abstract: A transmitter operates using a scheme that allows receivers using either type I hybrid ARQ or receivers using type II hybrid ARQ to successfully receive and decode blocks from a common transmitter without the need for the transmitter be informed of which scheme is being employed by the receivers.
Patent TW-484101-B (TW)
Title: Semiconductor device and its manufacturing method
Inventor: USAMI MITSUO
IPC: G06K19/077
Filed: 1999-12-01
Granted: 2002-04-21
Abstract: The present invention is a method for avoiding paper or sheet-type media from being counterfeited. The method comprises steps of embedding a thin, no thicker than 0.5 mm, semiconductor chip having an antenna buried into the media. The sidewall of the semiconductor chip is formed by silicon oxide film and is etched to be separated from the semiconductor chip. Since the size of the semiconductor chip is smaller than 0.5mm, the bend and concentrating overweight can be improved. Because of etching separation, there is no cracked semiconductor chip. Because of the silicon-oxide-film sidewall, the short circuit can be avoided when the antenna is connected to the sidewall.
Patent TW-538027-B (TW)
Title: Process for the preparation of (p-chlorophenyl)propanol derivatives
Inventor: MATSUMOTO HIROO
IPC: C07C45/51
Filed: 1999-12-03
Granted: 2003-06-21
Abstract: This invention provides a process for the preparation of an alcohol compound (1), characterized by subjecting p-iodochlorobenzene to Pd coupling with allyl alcohol in the presence of tetramethylammonium chloride, followed by reduction, and a process for the preparation of a compound (2), characterized by brominating the alcohol compound (1) obtainable by the process.
Patent TW-437049-B (TW)
Title: High voltage electrostatic protection device in integrated circuits and forming method thereof
Inventor: JIANG JR-MIN
IPC: H01L23/60
Filed: 1999-12-07
Granted: 2001-05-28
Abstract: A method for forming a high voltage electrostatic protection device in integrated circuits is provided. The high voltage electrostatic protection device is an N-type metal oxide semiconductor field effect transistor (MOSFET), whose manufacture process comprises the following steps. Performing a photolithographic process and an ion implantation process to form a P-type well region and an N-type well region in a semiconductor substrate and an insulating isolation is further formed. By changing the design of a photomask, the N-type well region is formed in the area for forming a drain region of a N-type MOSFET through performing an N-type ion implantation. Subsequently, a N-type MOSFET structure is formed, which comprises a gate dielectric layer, a gate conducting layer, an N-type doped deep drain region, a lightly doped source/drain region, a dielectric spacer, a source region and two separate drain regions. Finally, a P-type heavily doped region is formed between the two drain regions.
Patent TW-439175-B (TW)
Title: Integrated circuit device with composite oxide dielectric
Inventor: MERCHANT SAILESH MANSINH
IPC: H01L29/78
Filed: 2000-01-07
Granted: 2001-06-07
Abstract: An integrated circuit device includes a semiconductor substrate and a first metal oxide layer adjacent the substrate. The first metal oxide layer may be formed of tantalum oxide, for example. A second metal oxide layer, which includes an oxide with a relatively high dielectric constant such as titanium oxide, zirconium oxide, or ruthenium oxide, is formed on the first metal oxide layer opposite the semiconductor substrate, and a metal nitride layer, such as titanium nitride, is formed on the metal oxide layer opposite the first metal oxide layer. The metal nitride layer includes a metal which is capable of reducing the first metal oxide layer. Thus, the second metal oxide layer substantially blocks reduction of the first metal oxide layer by the metal of the metal nitride layer.